AO4407 Datasheet. Www.s Manuals.com. Ao

User Manual: Marking of electronic components, SMD Codes 44, 44-, 4407, 441NL, 4430, 4435GM, 4435GYT, 4459, 4459A, 4466, 4468, 449, 4496, 44T, 44W, 44p, 44s, 44t. Datasheets AO4407, AO4430L, AO4459L, AO4466L, AO4468L, AO4496L, AP4435GM, AP4435GM-HF, AP4435GYT-HF, BAS40-04, BAS40-04T, BAT54SW, FMMT449, SST441NL, Si4459ADY, TK71544AS.

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AO4407

30V P-Channel MOSFET

General Description Product Summary

V

DS

I

D

(at V

GS

=-20V) -12A

R

DS(ON)

(at V

GS

=-20V) < 13mΩ

R

DS(ON)

(at V

GS

=-10V) < 14mΩ

R

DS(ON)

(at V

GS

=-5V) < 30mΩ

100% UIS Tested

100% R

g

Tested

Symbol

V

DS

The AO4407 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R

DS(ON)

. This device is ideal for load switch

and battery protection applications.

* RoHS and Halogen-Free Compliant

V

Maximum UnitsParameter

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

-30V

Drain-Source Voltage

-30

SOIC-8

Top View Bottom View

D

D

D

D

S

S

S

GG

D

S

V

DS

V

GS

I

DM

I

AS

, I

AR

E

AS

, E

AR

T

J

, T

STG

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJL

Maximum Junction-to-Lead °C/W

°C/W

Maximum Junction-to-Ambient

A D

16

75

24

T

A

=25°C

T

A

=70°C

Power Dissipation

B

P

D

Avalanche energy L=0.3mH

C

Pulsed Drain Current

C

Continuous Drain

Current

T

A

=25°C

mJ

Avalanche Current

C

101

A26

A

I

D

-12

-10

-60

V

V±25Gate-Source Voltage

Drain-Source Voltage

-30

UnitsParameter Typ Max

°C/W

R

θJA

31

59

40

Maximum Junction-to-Ambient

A

2

T

A

=70°C

Junction and Storage Temperature Range -55 to 150 °C

Thermal Characteristics

W

3.1

Rev.14.0: July 2013

www.aosmd.com Page 1 of 5

AO4407

Symbol Min Typ Max Units

BV

DSS

-30 V

V

DS

=-30V, V

GS

=0V -1

T

J

=55°C -5

I

GSS

±100 nA

V

GS(th)

Gate Threshold Voltage -1.7 -2.25 -2.8 V

I

D(ON)

-60 A

8.5 13 mΩ

10 14

T

J

=125°C 12 19

19 30 mΩ

g

FS

27 S

V

SD

-0.72 -1 V

I

S

-4 A

C

iss

2060 2600 pF

C

oss

370 pF

C

rss

295 pF

R

g

1.2 2.4 3.6 Ω

Q

g

24 30 36 nC

Q

gs

4.6 nC

Q

gd

10 nC

t

D(on)

11 ns

t

9.4

ns

Drain-Source Breakdown Voltage

On state drain current

I

D

=-250µA, V

GS

=0V

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-12A

Reverse Transfer Capacitance

V

GS

=0V, V

DS

=-15V, f=1MHz

SWITCHING PARAMETERS

mΩ

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

I

DSS

µA

V

DS

=V

GS

I

D

=-250µA

V

DS

=0V, V

GS

= ±25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

I

S

=-1A,V

GS

=0V

V

DS

=-5V, I

D

=-10.5A

V

GS

=-5V, I

D

=-7A

Turn-On Rise Time

Forward Transconductance

Diode Forward Voltage

V

GS

=-20V, I

D

=-12A

V

=

-

10V, V

=

-

15V,

Gate resistance V

GS

=0V, V

DS

=0V, f=1MHz

Total Gate Charge

V

GS

=-10V, V

DS

=-15V, I

D

=-12A

Gate Source Charge

Gate Drain Charge

R

DS(ON)

Static Drain-Source On-Resistance

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

t

r

9.4

ns

t

D(off)

24 ns

t

f

12 ns

t

rr

30 40 ns

Q

rr

22 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time I

F

=-12A, dI/dt=100A/µs

Turn-On Rise Time

V

GS

=

-

10V, V

DS

=

-

15V,

R

L

=1.25Ω, R

GEN

=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Charge I

F

=-12A, dI/dt=100A/µs

Turn-Off DelayTime

A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev.14.0: July 2013 www.aosmd.com Page 2 of 5

AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

0

20

40

60

80

1 2 3 4 5 6

-ID(A)

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

0

5

10

15

20

25

30

0 5 10 15 20

RDS(ON) (mΩ

Ω

Ω

Ω)

-ID(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Normalized On-Resistance

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=-10V

ID=-12A

VGS=-5V

ID=-7A

25°C

125°C

V

DS

=

-

5V

VGS=-5V

0

20

40

60

80

012345

-ID(A)

-VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

V

GS

=-3.5V

-4V

-6V

-10V

-4.5V

-5V

VGS=-10V

40

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

IS(A)

-VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

25°C

125

°

C

(Note E)

5

10

15

20

25

30

2 4 6 8 10

RDS(ON) (mΩ

Ω

Ω

Ω)

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

ID=-12A

25°C

125°C

Rev.14.0: July 2013 www.aosmd.com Page 3 of 5

AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

0 5 10 15 20 25 30

-VGS (Volts)

Qg(nC)

Figure 7: Gate-Charge Characteristics

0

500

1000

1500

2000

2500

3000

0 5 10 15 20 25 30

Capacitance (pF)

-VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

Coss

C

rss

VDS=-15V

ID=-12A

1

10

100

1000

10000

0.00001 0.001 0.1 10 1000

Power (W)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction

-

to

-

TA=25°C

0.0

0.1

1.0

10.0

100.0

1000.0

0.01 0.1 1 10 100

ID(Amps)

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

10

µ

s

10s

1ms

DC

RDS(ON)

limited

TJ(Max)=150°C

TA=25°C

100

µ

s

10ms

Figure 10: Single Pulse Power Rating Junction

-

to

-

Ambient (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Zθ

θ

θ

θJA Normalized Transient

Thermal Resistance

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=75°C/W

Single Pulse

Rev.14.0: July 2013 www.aosmd.com Page 4 of 5

AO4407

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

VDC

DUT Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

Id

+

L

Vds

BV

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vds

DSS

2

E = 1/2 LI

AR

AR

Vdd

Vgs

Vgs

Rg

DUT

-

+

VDC

Vgs

Id

Vgs

I

Ig

Vgs

-

+

VDC

DUT

L

Vgs

Vds

Isd

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I

F

AR

dI/dt

I

RM

rr

Vdd

Vdd

Q = - Idt

t

rr

Rev.14.0: July 2013 www.aosmd.com Page 5 of 5

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