BD48xxx, BD49xxx Series Datasheet. Www.s Manuals.com. Bd48xxx R008 Rohm

User Manual: Marking of electronic components, SMD Codes FR, FR*, FR**, FR-***, FR=***, Fr. Datasheets 2SA1037, 2SA1037AK, 2SA1037LT1, 2SA1576A, 2SA1576UB, 2SA1774, 2SA1774EB, 2SA2029, BD48L29G, BD4935FVE, BD4935G, MAX6314US30D4-T, PZU22B1, RT9818C-29GV, RT9818C-29PV, V6319RSP3B.

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○Product structure：Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays

. 1/15 TSZ02201-0R7R0G300030-1-

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© 2013 ROHM Co., Ltd. All rights reserved.

22.May.2013.Rev.008

TSZ22111・14・001

www.rohm.com

Voltage Detector IC Series

Standard CMOS

Voltage Detector IC

BD48xxx series BD49xxx series

●General Description

ROHM’s BD48xxx and BD49xxx series are highly

accurate, low-current Voltage Detector IC series. The

family includes BD48xxx devices with N-channel open

drain output and BD49xxx devices with CMOS output.

The devices are available for specific detection voltages

ranging from 2.3V to 6.0V in increments of 0.1V.

●Features

 High accuracy detection

 Ultra-low current consumption

 Two output types (Nch open drain and CMOS output)

 Wide Operating temperature range

 Very small and low height package

 Package SSOP5 is similar to SOT-23-5 (JEDEC)

 Package SSOP3 is similar to SOT-23-3 (JEDEC)

●Typical Application Circuit

●Key Specifications

 Detection voltage: 2.3V to 6.0V (Typ.),

0.1V steps

 High accuracy detection voltage: ±1.0%

 Ultra-low current consumption: 0.9µA (Typ.)

 Operating temperature range: -40°C to +105°C

●Package

SSOP5: 2.90mm x 2.80mm x 1.25mm

SSOP3: 2.92mm x 2.80mm x 1.25mm

VSOF5: 1.60 mm x 1.60mm x 0.60mm

●Applications

Circuits using microcontrollers or logic circuits that

require a reset.

(Open Drain Output type）

BD48xxx series

V

DD1

BD48xxx

V

DD2

GND

Micro

controller

R

ST

CL

(

Capacitor for

noise filtering）

RL

(CMOS Output type）

BD49xxx series

CL

(

Capacitor for

noise filtering

）

V

DD1

BD49xxx Micro

controller

RST

GND

Datasheet

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TSZ22111・15・001

●Connection Diagram

SSOP5

VSOF5

●Pin Descriptions

SSOP5 VSOF5

PIN No. Symbol Function PIN No. Symbol Function

1 VOUT Reset Output 1 VOUT Reset Output

2 VDD Power Supply Voltage 2 SUB Substrate*

3 GND GND 3 N.C. Unconnected Terminal

4 N.C. Unconnected Terminal 4 GND GND

5 N.C. Unconnected Terminal 5 VDD Power Supply Voltage

*Connect the substrate to GND.

SSOP3(1pin GND) SSOP3(3pin GND)

●Pin Descriptions

SSOP3-1 SSOP3-2

PIN No. Symbol Function PIN No. Symbol Function

1 GND GND 1 VOUT Reset Output

2 VOUT Reset Output 2 VDD Power Supply Voltage

3 VDD Power Supply Voltage 3 GND GND

 Ordering Information

Note: When ordering new SSOP5, select “E” for Package 1 and “G” for Package 2.

Lot. No

TOP VIEW

V

OUT

SUB

N.C

V

DD

GND

4

3

2

1

5

Marking Lot. No

TOP VIEW

V

OUT

V

DD

GND

N.C.

N.C.

Marking

1

2

3

2

GND

VOUT

VDD

Marking Lot. No

TOP VIEW

1

2

3

VOUT VDD

GND

Marking Lot. No

TOP VIEW

Part Output Type Package1 Reset Voltage Value Package2 Packaging and

Number 48 : Open Drain 23 : 2.3V forming specification

49 : CMOS 0.1V step Embossed tape and reel

60 : 6.0V TR :The pin number 1is

the upper right

:SSOP5

:VSOF5

TL :The pin number 1is

Package1 Package2 Package name the upper left

E G SSOP5 :SSOP3-1

K G SSOP3(1pin GND) :SSOP3-2

L G SSOP3(3pin GND)

Blank FVE VSOF5

Blank

G

SSOP5

Rx x x xB D x x - T

Datasheet

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TSZ22111・15・001

(Unit : mm)

SSOP5

2.9±0.2

0.13

4°+6°

−4°

1.6

2.8±0.2

1.1±0.05

0.05±0.05

+0.2

−0.1

+0.05

−0.03

0.42+0.05

−0.04

0.95

54

1 2 3

1.25Max.

0.2Min.

0.1

Direction of feed

Reel ∗ Order quantity needs to be multiple of the minimum quantity.

<Tape and Reel information>

Embossed carrier tapeTape

Quantity

Direction

of feed The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

TR

( )

1pin

(Unit : mm)

VSOF5

1.2±0.05

4

3

1.0±0.05

1

0.6MAX

0.22±0.05

0.5

5

1.6±0.05

0.13±0.05

0.2MAX

2

1.6±0.05

(MAX 1.28 include BURR)

SSOP3

2.92±0.1

3

0.45

±

0.1

5

4°±4°

0.15

±

0.05

1

2

1.25MAX

2.8

±0.15

1.6

±0.1

1.1

±0.05

0.95

1.9

±

0.1

0.4

±

0.1

L

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Ｘ

Datasheet

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TSZ22111・15・001

●Lineup

Table 1. Lineup for VSOF5 and SSOP5 Package

Package Type

VSOF5 or SSOP5 SSOP5

Output Type Open Drain CMOS Open Drain CMOS

Detection

Voltage Marking

Part Number Marking

Part Number Marking Part Number Marking Part Number

6.0V EW BD4860 GW BD4960 Cm BD48E60 Ff BD49E60

5.9V EV BD4859 GV BD4959 Ck BD48E59 Fe BD49E59

5.8V EU BD4858 GU BD4958 Ch BD48E58 Fd BD49E58

5.7V ET BD4857 GT BD4957 Cg BD48E57 Fc BD49E57

5.6V ES BD4856 GS BD4956 Cf BD48E56 Fb BD49E56

5.5V ER BD4855 GR BD4955 Ce BD48E55 Fa BD49E55

5.4V EQ BD4854 GQ BD4954 Cd BD48E54 Ey BD49E54

5.3V EP BD4853 GP BD4953 Cc BD48E53 Er BD49E53

5.2V EN BD4852 GN BD4952 Cb BD48E52 Ep BD49E52

5.1V EM BD4851 GM BD4951 Ca BD48E51 En BD49E51

5.0V EL BD4850 GL BD4950 By BD48E50 Em BD49E50

4.9V EK BD4849 GK BD4949 Br BD48E49 Ek BD49E49

4.8V EJ BD4848 GJ BD4948 Bp BD48E48 Eh BD49E48

4.7V EH BD4847 GH BD4947 Bn BD48E47 Eg BD49E47

4.6V EG BD4846 GG BD4946 Bm BD48E46 Ef BD49E46

4.5V EF BD4845 GF BD4945 Bk BD48E45 Ee BD49E45

4.4V EE BD4844 GE BD4944 Bh BD48E44 Ed BD49E44

4.3V ED BD4843 GD BD4943 Bg BD48E43 Ec BD49E43

4.2V EC BD4842 GC BD4942 Bf BD48E42 Eb BD49E42

4.1V EB BD4841 GB BD4941 Be BD48E41 Ea BD49E41

4.0V EA BD4840 GA BD4940 Bd BD48E40 Dy BD49E40

3.9V DV BD4839 FV BD4939 Bc BD48E39 Dr BD49E39

3.8V DU BD4838 FU BD4938 Bb BD48E38 Dp BD49E38

3.7V DT BD4837 FT BD4937 Ba BD48E37 Dn BD49E37

3.6V DS BD4836 FS BD4936 Ay BD48E36 Dm BD49E36

3.5V DR BD4835 FR BD4935 Ar BD48E35 Dk BD49E35

3.4V DQ BD4834 FQ BD4934 Ap BD48E34 Dh BD49E34

3.3V DP BD4833 FP BD4933 An BD48E33 Dg BD49E33

3.2V DN BD4832 FN BD4932 Am BD48E32 Df BD49E32

3.1V DM BD4831 FM BD4931 Ak BD48E31 De BD49E31

3.0V DL BD4830 FL BD4930 Ah BD48E30 Dd BD49E30

2.9V DK BD4829 FK BD4929 Ag BD48E29 Dc BD49E29

2.8V DJ BD4828 FJ BD4928 Af BD48E28 Db BD49E28

2.7V DH BD4827 FH BD4927 Ae BD48E27 Da BD49E27

2.6V DG BD4826 FG BD4926 Ad BD48E26 Cy BD49E26

2.5V DF BD4825 FF BD4925 Ac BD48E25 Cr BD49E25

2.4V DE BD4824 FE BD4924 Ab BD48E24 Cp BD49E24

2.3V DD BD4823 FD BD4923 Aa BD48E23 Cn BD49E23

Datasheet

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© 2013 ROHM Co., Ltd. All rights reserved.

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TSZ22111・15・001

●

●●

●Lineup - continued

Table 2. Lineup for SSOF3(1pin GND) and SSOP3(3pin GND) Package

Package Type

SSOP3(1pin GND) SSOP3(3pin GND)

Output Type Open Drain CMOS Open Drain CMOS

Detection

Voltage Marking

Part Number Marking

Part Number Marking Part Number Marking Part Number

6.0V Cm BD48K60 Ff BD49K60 Kb BD48L60 Np BD49L60

5.9V Ck BD48K59 Fe BD49K59 Ka BD48L59 Nn BD49L59

5.8V Ch BD48K58 Fd BD49K58 Hy BD48L58 Nm BD49L58

5.7V Cg BD48K57 Fc BD49K57 Hr BD48L57 Nk BD49L57

5.6V Cf BD48K56 Fb BD49K56 Hp BD48L56 Nh BD49L56

5.5V Ce BD48K55 Fa BD49K55 Hn BD48L55 Ng BD49L55

5.4V Cd BD48K54 Ey BD49K54 Hm BD48L54 Nf BD49L54

5.3V Cc BD48K53 Er BD49K53 Hk BD48L53 Ne BD49L53

5.2V Cb BD48K52 Ep BD49K52 Hh BD48L52 Nd BD49L52

5.1V Ca BD48K51 En BD49K51 Hg BD48L51 Nc BD49L51

5.0V By BD48K50 Em BD49K50 Hf BD48L50 Nb BD49L50

4.9V Br BD48K49 Ek BD49K49 He BD48L49 Na BD49L49

4.8V Bp BD48K48 Eh BD49K48 Hd BD48L48 My BD49L48

4.7V Bn BD48K47 Eg BD49K47 Hc BD48L47 Mr BD49L47

4.6V Bm BD48K46 Ef BD49K46 Hb BD48L46 Mp BD49L46

4.5V Bk BD48K45 Ee BD49K45 Ha BD48L45 Mn BD49L45

4.4V Bh BD48K44 Ed BD49K44 Gy BD48L44 Mm BD49L44

4.3V Bg BD48K43 Ec BD49K43 Gr BD48L43 Mk BD49L43

4.2V Bf BD48K42 Eb BD49K42 Gp BD48L42 Mh BD49L42

4.1V Be BD48K41 Ea BD49K41 Gn BD48L41 Mg BD49L41

4.0V Bd BD48K40 Dy BD49K40 Gm BD48L40 Mf BD49L40

3.9V Bc BD48K39 Dr BD49K39 Gk BD48L39 Me BD49L39

3.8V Bb BD48K38 Dp BD49K38 Gh BD48L38 Md BD49L38

3.7V Ba BD48K37 Dn BD49K37 Gg BD48L37 Mc BD49L37

3.6V Ay BD48K36 Dm BD49K36 Gf BD48L36 Mb BD49L36

3.5V Ar BD48K35 Dk BD49K35 Ge BD48L35 Ma BD49L35

3.4V Ap BD48K34 Dh BD49K34 Gd BD48L34 Ky BD49L34

3.3V An BD48K33 Dg BD49K33 Gc BD48L33 Kr BD49L33

3.2V Am BD48K32 Df BD49K32 Gb BD48L32 Kp BD49L32

3.1V Ak BD48K31 De BD49K31 Ga BD48L31 Kn BD49L31

3.0V Ah BD48K30 Dd BD49K30 Fy BD48L30 Km BD49L30

2.9V Ag BD48K29 Dc BD49K29 Fr BD48L29 Kk BD49L29

2.8V Af BD48K28 Db BD49K28 Fp BD48L28 Kh BD49L28

2.7V Ae BD48K27 Da BD49K27 Fn BD48L27 Kg BD49L27

2.6V Ad BD48K26 Cy BD49K26 Fm BD48L26 Kf BD49L26

2.5V Ac BD48K25 Cr BD49K25 Fk BD48L25 Ke BD49L25

2.4V Ab BD48K24 Cp BD49K24 Fh BD48L24 Kd BD49L24

2.3V Aa BD48K23 Cn BD49K23 Fg BD48L23 Kc BD49L23

Datasheet

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TSZ22111・15・001

●Absolute Maximum Ratings

Parameter Symbol Limits Unit

Power Supply Voltage VDD-GND -0.3 to +10 V

Output Voltage Nch Open Drain Output VOUT GND-0.3 to +10 V

CMOS Output GND-0.3 to VDD+0.3

Output Current Io 70 mA

Power

Dissipation

SSOP5 *1*4

Pd

540

mW SSOP3 *2*4

700

VSOF5 *3*4

210

Operating Temperature Topr -40 to +105 °C

Ambient Storage Temperature Tstg -55 to +125 °C

*1 Reduced by 5.4mW/°C when used over 25°C.

*2 Reduced by 7.0mW/°C when used over 25°C.

*3 Reduced by 2.1mW/°C when used over 25°C.

*4 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).

●Electrical Characteristics (Unless Otherwise Specified, Ta=-40 to 105°C)

Parameter Symbol Condition Limit Unit

Min. Typ. Max.

Detection Voltage VDET

RL=470kΩ, VDD=HL *1

VDET(T)

×0.99 VDET(T) VDET(T)

×1.01

V

VDET=2.5V

Ta=+25°C 2.475 2.5 2.525

Ta=-40°C to 85°C 2.418 - 2.584

Ta=85°C to 105°C 2.404 - 2.597

VDET=3.0V

Ta=+25°C 2.970 3.0 3.030

Ta=-40°C to 85°C 2.901 - 3.100

Ta=85°C to 105°C 2.885 - 3.117

VDET=3.3V

Ta=+25°C 3.267 3.3 3.333

Ta=-40°C to 85°C 3.191 - 3.410

Ta=85°C to 105°C 3.173 - 3.428

VDET=4.2V

Ta=+25°C 4.158 4.2 4.242

Ta=-40°C to 85°C 4.061 - 4.341

Ta=85°C to 105°C 4.039 - 4.364

VDET=4.8V

Ta=+25°C 4.752 4.8 4.848

Ta=-40°C to 85°C 4.641 - 4.961

Ta=85°C to 105°C 4.616 - 4.987

Output Delay Time “LH” tPLH CL=100pF RＬ=100kΩ *2

Vout=GND50% - - 100 µs

Circuit Current when ON ICC1 VDD=VDET-0.2V *1

VDET=2.3-3.1V - 0.51 1.53

µA

VDET=3.2-4.2V - 0.56 1.68

VDET=4.3-5.2V - 0.60 1.80

VDET=5.3-6.0V - 0.66 1.98

Circuit Current when OFF ICC2 VDD=VDET+2.0V *1

VDET=2.3-3.1V - 0.75 2.25

µA

VDET=3.2-4.2V - 0.80 2.40

VDET=4.3-5.2V - 0.85 2.55

VDET=5.3-6.0V - 0.90 2.70

Operating Voltage Range VOPL VOL≤0.4V, Ta=25 to 105°C, RL=470kΩ 0.95 - - V

VOL≤0.4V, Ta=-40 to 25°C, RL=470kΩ 1.20 - -

VDET(T) : Standard Detection Voltage(2.3V to 6.0V, 0.1V step)

RL: Pull-up resistor to be connected between VOUT and power supply.

CL: Capacitor to be connected between VOUT and GND.

Design Guarantee. (Outgoing inspection is not done on all products.)

*1 Guaranteed at Ta=25°C.

*2 tPLH:VDD=(VDET typ.-0.5V)(VDET typ.+0.5V)

Datasheet

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TSZ22111・15・001

●Electrical Characteristics (Unless Otherwise Specified, Ta=-40 to 105°C) - continued

Parameter Symbol Condition Limit Unit

Min. Typ. Max.

‘Low’Output Voltage (Nch) VOL VDD=1.5V, ISINK = 0.4 mA, VDET=2.3-6.0V - - 0.5 V

VDD=2.4V, ISINK = 2.0 mA, VDET=2.7-6.0V - - 0.5

‘High’Output Voltage (Pch)

(BD49Exxx Series) VOH

VDD=4.8V, ISOURCE=0.7 mA, VDET(2.3V to 4.2V)

VDD-0.5 - -

V VDD=6.0V, ISOURCE=0.9 mA,VDET(4.3V to 5.2V) VDD-0.5 - -

VDD=8.0V, ISOURCE=1.1 mA,VDET(5.3V to 6.0V)

VDD-0.5 - -

Leak Current when OFF

(BD48xxx Series) Ileak VDD=VDS=10V *1

- - 0.1 µA

Detection Voltage

Temperature coefficient VDET/∆T Ta=-40°C to 105°C

(Designed Guarantee) - ±100 ±360 ppm/°C

Hysteresis Voltage ∆VDET VDD=LHL, RL=470kΩ VDET×0.03

VDET×0.05

VDET×0.08

V

VDET(T) : Standard Detection Voltage(2.3V to 6.0V, 0.1V step)

RL: Pull-up resistor to be connected between VOUT and power supply.

CL: Capacitor to be connected between VOUT and GND.

Design Guarantee. (Outgoing inspection is not done on all products.)

*1 Guaranteed at Ta=25°C.

Datasheet

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TSZ22111・15・001

●Block Diagrams

Fig.1 BD48xxx series

Fig.2 BD49xxx series

V

OUT

V

DD

GND

Vref

V

OUT

VDD

GND

Vref

Datasheet

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TSZ22111・15・001

●Typical Performance Curves

Fig.3 Circuit Current

0.0

0.5

1.0

1.5

2.0

0 1 2 3 4 5 6 7 8 9 10

V

DD

SUPPLY VOLTAGE ：V

DD

[V]

CIRCUIT CURRENT ： I

DD

[µA]

【BD4842G/FVE

】

0

5

10

15

20

0.0 0.5 1.0 1.5 2.0 2.5

DRAIN-SOURCE VOLTAGE ： VDS[V]

"LOW" OUTPUT CURRENT ： IOL[mA]

【BD4842G/FVE】

VDD=2.4V

VDD=1.2V

Fig.4 “Low” Output Current

Fig.6 I/O Characteristics

0

1

2

3

4

5

6

7

8

9

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

VDD SUPPLY VOLTAGE ：VDD[V]

OUTPUT VOLTAGE

： VOUT[V]

【BD4842G/FVE】

Ta=25

℃

Ta=25℃

0

5

10

15

20

25

30

35

40

45

0 1 2 3 4 5 6

DRAIN-SOURCE VOLTAGE ： V

DS

[V]

"HIGH" OUTPUT CURRENT ： I

OH

[mA]

【BD4942G/FVE】

V

DD

=8.0V

V

DD

=6.0V

V

DD

=4.8V

Fig.5 “High” Output Current

【BD49x42】

【BD49x42】

【BD48x42】

【BD49x42】

【BD48x42】

【BD49x42】

【BD48x42】

Datasheet

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TSZ22111・15・001

●Typical Performance Curves – continued

Fig.7 Operating Limit Voltage

[V]

0.0

0.2

0.4

0.6

0.8

1.0

00.5 11.5 22.5

SUPPLY VOLTAGE :

OUTPUT VOLTAGE

:

V

OUT

[V]

【

BD4842G/FVE

】

Fig.9 Circuit Current when ON

0.0

0.5

1.0

1.5

-40 -20 0 20 40 60 80 100

TEMPERATURE ： Ta[℃]

CIRCUIT CURRENT WHEN ON ： I

DD1

[μA]

【BD4842G/FVE

】

Fig.10 Circuit Current when OFF

0.0

0.5

1.0

1.5

-40 -20 0 20 40 60 80 100

TEMPERATURE ： Ta[℃]

CIRCUIT CURRENT WHEN OFF ： I

DD2

[μA]

【BD4842G/FVE

】

【

BD48x42x

】

【

BD48x42x

】

【

BD48x42x

】

【BD49x42】

【BD48x42】

【BD49x42】

【BD48x42】

【BD49x42】

【BD48x42】

Fig.8 Detection Voltage

Release Voltage

3.0

3.4

3.8

4.2

4.6

5.0

5.4

-40 0 40 80

TEMPERATURE

:

Ta[℃]

DETECTION VOLTAGE

:

V

DET[V]

【

BD4842G/FVE

】

Low to High(V

DET

+

∆

V

DET

）

High to Low(V

DET

）

～

～

【

BD48x42x

】

【BD49x42】

【BD48x42】

Datasheet

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© 2013 ROHM Co., Ltd. All rights reserved.

22.May.2013.Rev.008

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TSZ22111・15・001

●Typical Performance Curves – continued

Fig.11 Operating Limit Voltage

0.0

0.5

1.0

1.5

-40 -20 0 20 40 60 80 100

TEMPERATURE ： Ta[℃]

MINIMUM OPERATION VOLTAGE

：

V

OPL

[V]

【BD4842G/FVE】

【

BD48x42x

】

【BD49x42】

【BD48x42】

Datasheet

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© 2013 ROHM Co., Ltd. All rights reserved.

22.May.2013.Rev.008

www.rohm.com

TSZ22111・15・001

●Application Information

Explanation of Operation

For both the open drain type (Fig.12) and the CMOS output type (Fig.13), the detection and release voltages are used as

threshold voltages. When the voltage applied to the V

DD

pins reaches the appropriate threshold voltage, the V

OUT

terminal

voltage switches from either “High” to “Low” or from “Low” to “High”. Please refer to the Timing Waveform and Electrical

Characteristics for information on hysteresis.

Because the BD48xxx series uses an open drain output type, it is necessary to connect a pull-up resistor to V

DD

or another

power supply if needed [The output “High” voltage (V

OUT

) in this case becomes V

DD

or the voltage of the other power

supply].

Fig.12 (BD48xxx series Internal Block Diagram) Fig.13 (BD49xxx series Internal Block Diagram)

Reference Data

Examples of Leading (t

PLH

) and Falling (t

PHL

) Output

Part Number t

PLH

(µs) t

PHL

(µs)

BD48x45 39.5 87.8

BD49x45 32.4 52.4

V

DD

=4.3V5.1V V

DD

=5.1V4.3V

*These data are for reference only.

The figures will vary with the application, so please check actual operating conditions before use.

Timing Waveform

Example: the following shows the relationship between the input voltages V

DD

and the output voltage V

OUT

when the

input power supply voltage V

DD

swept up and down (the circuits are those in Fig.12 and 13).

1

When the power supply is turned on, the output is unstable

from after over the operating limit voltage (VOPL) until tPHL.

Therefore it is possible that the reset signal is not outputted when

the rise time of V

DD

is faster than tPHL.

2

When V

DD

is greater than V

OPL

but less than the reset release

voltage (V

DET

+ ∆V

DET

), the output voltages will switch to Low.

3

If V

DD

exceeds the reset release voltage (V

DET

+ ∆V

DET

), then

V

OUT

switches from L to H.

4

If V

DD

drops below the detection voltage (V

DET

) when the power

supply is powered down or when there is a power supply

fluctuation, V

OUT

switches to L (with a delay of t

PHL

).

5

The potential difference between the detection voltage and the

release voltage is known as the hysteresis width (∆V

DET

). The

system is designed such that the output does not toggle with

power supply fluctuations within this hysteresis width, preventing

malfunctions due to noise.

V

DD

VDET+ΔVDET

VDET

VOPL

0V

tPHL

①

②

V

OUT

tPLH

tPHL

tPLH

③

④

VOL

VOH

⑤

Fig.14 Timing Waveform

Vref

R1

R2

V

DD

GND

Q1

V

OUT

R3

R

L

Vref

R1

R2

R3

Q2

Q1

V

DD

V

OUT

GND

Datasheet

13/15

BD48xxx series BD49xxx series

TSZ02201-0R7R0G300030-1-

2

© 2013 ROHM Co., Ltd. All rights reserved.

22.May.2013.Rev.008

www.rohm.com

TSZ22111・15・001

●

●●

●Circuit Applications

1) Examples of a common power supply detection reset circuit.

Application examples of BD48xxx series (Open Drain

output type) and BD49xxx series (CMOS output type)

are shown on the left.

CASE1: Power supply of the microcontroller (V

DD2

)

differs from the power supply of the reset detection IC

(V

DD1

).

Use an open drain output type (BD48xxx) device with a

load resistance R

L

attached as shown in figure 15.

CASE2: Power supply of the microcontroller (V

DD1

) is

same as the power supply of the reset detection IC

(V

DD1

).

Use a CMOS output type (BD49xxx) device or an open

drain device with a pull up resistor between output and

VDD1.

When a capacitance C

L

for noise filtering is connected to

the V

OUT

pin (the reset signal input terminal of the

microcontroller), please take into account the rise and

fall waveform of the output voltage (V

OUT

).

The Electrical characteristics were measured using

R

L

= 470kΩ and C

L

= 100pF.

2) The following is an example of a circuit application in which an OR connection between two types of detection voltage

resets the microcontroller.

To reset the microcontroller when many independent power supplies are used in the system, OR connect an open drain

output type (BD48xxx series) to the microcontroller’s input with pull-up resistor to the supply voltage of the microcontroller

(V

DD3

) as shown in Fig. 17. By pulling-up to V

DD3

, output “High” voltage of micro-controller power supply is possible.

Fig.16 CMOS Output Type

V

DD1

BD48xxx

V

DD2

GND

Micro

controller

R

ST

C

L

(

capacitor is for

noise filtering

）

R

L

CL

(

capacitor is for

filtering）

V

DD1

BD49xxx

Micro

controller

RST

GND

Fig.15 Open Drain Output Type

VDD2VDD1 VDD3

GND

Microcontroller

R

L

BD48xxx

BD48xxx RST

Fig.17

Datasheet

14/15

BD48xxx series BD49xxx series

TSZ02201-0R7R0G300030-1-

2

© 2013 ROHM Co., Ltd. All rights reserved.

22.May.2013.Rev.008

www.rohm.com

TSZ22111・15・001

3) Examples of the power supply with resistor dividers

In applications wherein the power supply voltage of an IC comes from a resistor divider circuit, an in-rush current will flow

into the circuit when the output level switches from “High” to “Low” or vice versa. In-rush current is a sudden surge of

current that flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This current flow

may cause malfunction in the systems operation such as output oscillations, etc.

Fig.18

When an in-rush current (I1) flows into the circuit (Refer to Fig. 18) at the time when output switches from “Low” to “High”,

a voltage drop of I1×R2 (input resistor) will occur in the circuit causing the VDD supply voltage to decrease. When the

VDD voltage drops below the detection voltage, the output will switch from “High” to “Low”. While the output voltage is at

“Low” condition, in-rush current will stop flowing and the voltage drop will be reduced. As a result, the output voltage will

switches again from “Low” to “High” which causes an in-rush current and a voltage drop. This operation repeats and will

result to oscillation.

VOUT

R2

VDD

BD48xxx

BD49xxx

GND

R1

I1

V1

CIN

CL

IDD

VDD

VDET

0

Through Current

Fig.19 Current Consumption vs. Power Supply Voltage

Datasheet

15/15

BD48xxx series BD49xxx series

TSZ02201-0R7R0G300030-1-

2

© 2013 ROHM Co., Ltd. All rights reserved.

22.May.2013.Rev.008

www.rohm.com

TSZ22111・15・001

●Operational Notes

1) Absolute maximum ratings

Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit

between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such

as adding a fuse, in case the IC is operated over the absolute maximum ratings.

2) Ground Voltage

The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no

pins are at a voltage below the ground pin at any time, even during transient condition.

3) Recommended operating conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.

The electrical characteristics are guaranteed under the conditions of each parameter.

4) Bypass Capacitor for Noise Rejection

To help reject noise, put a 1µF capacitor between VDD pin and GND and 1000pF capacitor between VOUT pin and GND.

Be careful when using extremely big capacitor as transient response will be affected.

5) Short between pins and mounting errors

Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong

orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.

6) Operation under strong electromagnetic field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

7) The V

DD

line impedance might cause oscillation because of the detection current.

8) A V

DD

to GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.

9) Lower than the mininum input voltage puts the VOUT in high impedance state, and it must be VDD in pull up (VDD)

condition.

10) External parameters

The recommended parameter range for R

L

is 10k to 1M. There are many factors (board layout, etc) that can affect

characteristics. Please verify and confirm using practical applications.

11) Power on reset operation

Please note that the power on reset output varies with the V

DD

rise time. Please verify the behavior in the actual

operation.

12) Testing on application boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject

the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should

always be turned off completely before connecting or removing it from the test setup during the inspection process. To

prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and

storage.

13) Rush current

When power is first supplied to the IC, rush current may flow instantaneously. It is possible that the charge current to

the parasitic capacitance of internal photo diode or the internal logic may be unstable. Therefore, give special

consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of connections.

14) This IC has extremely high impedance terminals. Small leak current due to the uncleanness of PCB surface might

cause unexpected operations. Application values in these conditions should be selected carefully. If 10M leakage is

assumed between the C

T

terminal and the GND terminal, 1M connection between the CT terminal and the V

DD

terminal would be recommended. Also, if the leakage is assumed between the Vout terminal and the GND terminal, the

pull up resistor should be less than 1/10 of the assumed leak resistance.

Datasheet

Datasheet

Notice - GE Rev.002

© 2014 ROHM Co., Ltd. All rights reserved.

Notice

Precaution on using ROHM Products

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damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN USA EU CHINA

CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ

CLASSⅣ CLASSⅢ

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Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

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2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the

ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Datasheet

Datasheet

Notice - GE Rev.002

© 2014 ROHM Co., Ltd. All rights reserved.

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

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DatasheetDatasheet

Notice – WE Rev.001

© 2014 ROHM Co., Ltd. All rights reserved.

General Precaution

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