BGA2011 900 MHz High Linear Low Noise. Amplifier Philips
User Manual: Marking of electronic components, SMD Codes A5, A5*, A5**, A5***, A5-, A5-**, A5-***. Datasheets 1S2837, BGA2011, EMA5, FMA5A, FMMD2837, HSMS-2805, MIC803-40D3VC3, MIC803-40D3VM3, MMBD2837, RT9011-DKPJ6, RT9011-JSPQV, RT9198-18PU5, RT9198-33PY, RT9818A-41PU3, Si2305ADS, Si2305DS, Si9183DT-28-T1, TPS3831E16DQNR, UDZS27B, UMA5N.
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2011 900 MHz high linear low noise amplifier Product specification Supersedes data of 2000 Sep 06 2000 Dec 04 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier FEATURES BGA2011 PINNING • Low current, low voltage PIN DESCRIPTION • High linearity 1 RF in • High power gain 2 VC • Low noise 3 VS 4 RF out • Integrated temperature compensated biasing • Control pin for adjustment bias current. 5, 6 GND APPLICATIONS VS handbook, halfpage • RF front end 6 5 4 • Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. RF out DESCRIPTION BIAS CIRCUIT VC Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. 1 2 3 Top view RF in MBL251 GND Marking code:A5- Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS DC supply voltage IS DC supply current CONDITIONS RF input AC coupled TYP. MAX. UNIT 3 4.5 V 15 − mA IC DC control current VC = VS 0.11 − mA |s21|2 insertion power gain in application circuit, see Fig.2; f = 900 MHz 19 − dB NF noise figure IS = 15 mA; f = 900 MHz 1.7 − dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER VS DC supply voltage VC voltage on control pin IS supply current IC control current Ptot total power dissipation Tstg storage temperature Tj operating junction temperature 2000 Dec 04 CONDITIONS RF input AC coupled forced by DC voltage on RF input Ts ≤ 100 °C 2 MIN. MAX. UNIT − 4.5 V − VS V − 30 mA − 0.25 mA − 135 mW −65 +150 °C − 150 °C Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to solder point VALUE UNIT 350 K/W Ptot = 135 mW; Ts ≤ 100 °C CHARACTERISTICS RF input AC coupled; VS = 3 V; IS = 15 mA; f = 900 MHz; Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER IS supply current IC control current RL IN return losses input RL OUT |s21|2 NF IP3in 2000 Dec 04 return losses output insertion power gain noise figure input intercept point CONDITIONS MIN. TYP. MAX. UNIT 10 15 20 mA − 0.11 − mA typical application; see Fig.2 − −11 − dB high IP3 (see Fig.2; stripline = 0 mm) − −11 − dB high IP3 (see Fig.2; stripline = 1.5 mm) − −17 − dB typical application; see Fig.2 − −11 − dB high IP3 (see Fig.2; stripline = 0 mm) − −12 − dB high IP3 (see Fig.2; stripline = 1.5 mm) − −14 − dB typical application; see Fig.2 − 15 − dB high IP3 (see Fig.2; stripline = 0 mm) − 19 − dB high IP3 (see Fig.2; stripline = 1.5 mm) − 16 − dB typical application; see Fig.2; IS = 15 mA − 1.5 − dB high IP3 (see Fig.2; stripline = 0 mm) − 1.6 − dB high IP3 (see Fig.2; stripline = 1.5 mm) − 1.7 − dB typical application; see Fig.2 − −2 − dBm high IP3 (see Fig.2; stripline = 0 mm) − 4 − dBm high IP3 (see Fig.2; stripline = 1.5 mm) − 10 − dBm 3 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 APPLICATION INFORMATION handbook, full pagewidth VS VS VC VC C5 C3 C4 BIAS CIRCUIT L2 C2 OUT C1 RF in RF out MLD480 IN SOT363 L1 GND C6 stripline Fig.2 Application circuit. List of components (see Fig.2) COMPONENT DESCRIPTION TYPICAL APPLICATION HIGH IP3 APPLICATION DIMENSIONS C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603 C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603 C4 multilayer ceramic chip capacitor 5.6 pF 5.6 pF 0603 C6 multilayer ceramic chip capacitor − 2 x 100 nF 0805 L1 SMD inductor − 10 nH 0603 L2 SMD inductor − 8.2 nH 0603 Note 1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (εr = 6.15), board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm. 2000 Dec 04 4 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier MLD481 30 BGA2011 MLD482 20 handbook, halfpage handbook, halfpage IS (mA) gain (dB) gain (dB) s21 IS 2 15 20 20 15 Gmax 10 10 s21 2 IS 10 5 5 0 0 0 0 1000 2000 f (MHz) 3000 0 IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω. Fig.3 VC (V) 3 f = 900 MHz; VS = 3 V; PD = −30 dBm. Insertion gain (|s21|2) and Gmax as functions of frequency; typical values. Fig.4 MLD483 20 2 1 Insertion gain and supply current as functions of control voltage; typical values. MLD484 15 handbook, halfpage handbook, halfpage s 2 21 (dB) 0 IP3in (dBm) IP3out (dBm) 15 10 −5 IP3in 10 IP3out 5 −10 5 0 10−3 10−2 IC (mA) 0 10−1 5 10 IS (mA) −15 15 VS = VC = 3 V; PD = −30 dBm (both tones); f = 900 MHz; ∆f = 100 kHz. f = 900 MHz; VS = 4 V; PD = −30 dBm. Fig.5 2000 Dec 04 Fig.6 Insertion gain as a function of control current; typical values. 5 Output and input 3rd order intercept point as a function of supply current; typical application; typical values. Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 MLD485 2 handbook, halfpage NF (dB) 1.6 1.2 0.8 0.4 0 10 5 IS (mA) 15 VS = VC = 3 V; f = 900 MHz. Fig.7 Noise figure as a function of supply current; typical values. Scattering parameters VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω; Tamb = 25 °C f (MHz) s21 s11 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.553 −22.45 16.198 160.5 0.006 76.72 0.115 −87.98 200 0.499 −42.12 14.354 145.4 0.012 67.53 0.184 −113.5 400 0.394 −71.44 10.688 124.6 0.018 59.55 0.256 −141.2 600 0.331 −90.58 8.156 112.2 0.021 58.29 0.283 −158.1 800 0.295 −104.0 6.512 103.9 0.024 60.91 0.293 −170.5 1000 0.276 −114.9 5.415 97.72 0.027 64.65 0.298 178.7 1200 0.267 −124.2 4.640 93.01 0.032 69.04 0.304 169.5 1400 0.262 −134.2 4.112 89.10 0.037 73.22 0.310 162.5 1600 0.270 −144.2 3.659 85.21 0.043 75.43 0.311 157.0 1800 0.287 −152.7 3.336 82.21 0.049 77.84 0.309 152.7 2000 0.309 −159.7 3.045 78.21 0.057 78.60 0.312 150.5 2200 0.339 −166.2 2.849 73.94 0.066 77.96 0.304 149.6 2400 0.360 −172.0 2.680 69.19 0.076 75.04 0.291 151.4 2600 0.390 −175.9 2.511 64.60 0.086 74.92 0.292 149.2 2800 0.398 178.0 2.332 59.20 0.094 69.95 0.278 148.4 3000 0.392 173.9 2.108 56.72 0.099 69.12 0.317 140.0 2000 Dec 04 6 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 0.2 0 180° 0.5 1 2 5 0° 0 3 GHz 100 MHz 900 MHz −0.2 −5 −0.5 −2 −135° −45° −1 MLD486 1.0 −90° IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω. Fig.8 Common emitter input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 135° 45° 500 MHz 100 MHz 20 16 900 MHz 12 8 1.8 GHz 3 GHz 4 180° 0° −135° −45° −90° MLD487 IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω. Fig.9 Common emitter forward transmission coefficient (s21); typical values. 2000 Dec 04 7 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 90° handbook, full pagewidth 135° 45° 3 GHz 20 16 12 8 4 180° 0° 100 MHz −135° −45° −90° MLD488 IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω. Fig.10 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 3 GHz 180° 0.2 0 0.5 0.2 1 2 5 0° 900 MHz 0 100 MHz −5 −0.2 −0.5 −2 −135° −45° −1 MLD489 1.0 −90° IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω. Fig.11 Common emitter output reflection coefficient (s22); typical values. 2000 Dec 04 8 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2000 Dec 04 REFERENCES IEC JEDEC EIAJ SC-88 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier BGA2011 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Dec 04 10 Philips Semiconductors Product specification 900 MHz high linear low noise amplifier NOTES 2000 Dec 04 11 BGA2011 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613516/02/pp12 Date of release: 2000 Dec 04 Document order number: 9397 750 07678
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