IRLML6402PbF Datasheet. Www.s Manuals.com. Irf

User Manual: Marking of electronic components, SMD Codes E*, E****. Datasheets BAT54, IRLML6402, IRLML6402PbF, NUP4103FC.

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IRLML6402PbF
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HEXFET® Power MOSFET

Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free

G 1

VDSS = -20V

3 D
S

RDS(on) = 0.065Ω

2

Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in battery
and load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal
for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA
cards. The thermal resistance and power dissipation are the best available.

Micro3™

Standard Pack
Base Part Number

Package Type

IRLML6402TRPbF

Micro3™ (SOT-23)

Form

Quantity

Tape and Reel

3000

Orderable Part Number
IRLML6402TRPbF

Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG

Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range

Max.

Units

-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
-55 to + 150

V
A
W
W/°C
mJ
V
°C

Thermal Resistance
Parameter
RθJA
1

Maximum Junction-to-Ambientƒ
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Typ.

Max.

Units

75

100

°C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

ΔV(BR)DSS/ΔTJ

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)
gfs

Gate Threshold Voltage
Forward Transconductance

IDSS

Drain-to-Source Leakage Current

V(BR)DSS

IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss

Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min.
-20
–––
–––
–––
-0.40
6.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––

Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250μA
-0.009 ––– V/°C Reference to 25°C, I D = -1mA ‚
0.050 0.065
VGS = -4.5V, ID = -3.7A ‚
Ω
0.080 0.135
VGS = -2.5V, ID = -3.1A ‚
-0.55 -1.2
V
VDS = VGS, ID = -250μA
––– –––
S
VDS = -10V, ID = -3.7A ‚
––– -1.0
VDS = -20V, VGS = 0V
µA
––– -25
VDS = -20V, VGS = 0V, TJ = 70°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
8.0
12
ID = -3.7A
1.2 1.8
nC
VDS = -10V
2.8 4.2
VGS = -5.0V ‚
350 –––
VDD = -10V
48 –––
ID = -3.7A
ns
588 –––
RG = 89Ω
381 –––
RD = 2.7Ω
633 –––
VGS = 0V
145 –––
pF
VDS = -10V
110 –––
ƒ = 1.0MHz

Source-Drain Ratings and Characteristics
IS
ISM

VSD
trr
Qrr

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge

Min. Typ. Max. Units
–––

–––

-1.3

–––

–––

-22

–––
–––
–––

–––
29
11

-1.2
43
17

A
V
ns
nC

Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
di/dt = -100A/μs ‚

D

S

‚

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.

ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.

„ Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.

** For recommended footprint and soldering techniques refer to application note #AN-994.
2

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100

100

VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

10

-2.25V

20μs PULSE WIDTH
TJ = 25 °C

1
0.1

1

10

10

-2.25V

100

RDS(on) , Drain-to-Source On Resistance
(Normalized)

-I D , Drain-to-Source Current (A)

2.0

TJ = 25 ° C

TJ = 150 ° C

V DS = -15V
20μs PULSE WIDTH
5.0

6.0

7.0

8.0

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics
3

10

100

Fig 2. Typical Output Characteristics

100

4.0

1

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

3.0

20μs PULSE WIDTH
TJ = 150 °C

1
0.1

-VDS , Drain-to-Source Voltage (V)

10
2.0

VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP

TOP

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ID = -3.7A

1.5

1.0

0.5

0.0
-60 -40 -20

VGS = -4.5V
0

20

40

60

80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance
Vs. Temperature
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VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd

Ciss
600

400

Coss

200

Crss
0
10

ID = -3.7A
VDS =-10V

8

6

4

2

0

1

100

FOR TEST CIRCUIT
SEE FIGURE 13
0

3

9

12

Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage

100

100

-IID , Drain Current (A)

OPERATION IN THIS AREA LIMITED
BY RDS(on)

10

TJ = 150 ° C

1

TJ = 25 ° C

0.1
0.2

0.6

0.8

1.0

Fig 7. Typical Source-Drain Diode
Forward Voltage
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10us
10
100us

1ms

1

10ms

V GS = 0 V
0.4

-VSD ,Source-to-Drain Voltage (V)

4

6

QG , Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

-ISD , Reverse Drain Current (A)

C, Capacitance(pF)

800

10

-VGS , Gate-to-Source Voltage (V)

1000

1.2

TC = 25 ° C
TJ = 150 ° C
Single Pulse

0.1
0.1

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area
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25

EAS , Single Pulse Avalanche Energy (mJ)

-ID , Drain Current (A)

4.0

3.0

2.0

1.0

0.0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.
Case Temperature

ID
-1.7A
-3.0A
BOTTOM -3.7A
TOP

20

15

10

5

0

25

50

75

100

125

Starting TJ , Junction Temperature ( °C)

Fig 10. Maximum Avalanche Energy
Vs. Drain Current

Thermal Response (Z thJA )

1000

100
D = 0.50
0.20
0.10

10

0.05
PDM

0.02
0.01

t1
SINGLE PULSE
(THERMAL RESPONSE)

1

0.1
0.00001

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5

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150

RDS(on) , Drain-to -Source Voltage ( Ω )

0.14

0.12

0.10

0.08

Id = -3.7A

0.06

0.04

0.02
2.0

3.0

4.0

5.0

6.0

-VGS, Gate -to -Source Voltage ( V )

Fig 12. Typical On-Resistance Vs.
Gate Voltage

6

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7.0

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

IRLML6402PbF

0.20
VGS = -2.5V
0.16

0.12

0.08

VGS = -4.5V

0.04

0.00
0

5

10

15

20

25

-I D , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.
Drain Current

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30

IRLML6402PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L

6
5

D

3

6
ccc

2

B

e

A
A1
A2
b
c

E

E1

1

DIME NSIONS
MILLIME T ERS
MAX
MIN
0.89
1.12
0.01
0.10
0.88
1.02
0.30
0.50
0.08
0.20
3.04
2.80
2.10
2.64
1.40
1.20
0.95 BSC
1.90 BSC
0.40
0.60
0.25 BS C
0°
8°
0.10
0.20
0.15

C B A

D
E
E1
e

5

e1
L
L1
0
aaa

e1

bbb
ccc
4

INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
.0375 BSC
.075 BSC
.0158
.0236
.0118 BSC
0°
8°
.004
.008
.006

H

A A2

L1
3X b

A1

bbb

aaa C
C A B

3 S URF

0

7

3X L

RECOMMENDED FOOT PRINT

NOT ES
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.

0.972
3X [.038]

2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES .
2.742
[.1079]

3. CONT ROLLING DIMENS ION: MILLIMET ER.
4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE.
5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.

0.95
[.0375]

3X

0.802
[.031]

1.90
[.075]

Micro3 (SOT-23 / TO-236AB) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
DATE CODE
PART NUMBER

Cu WIRE
HALOGEN FREE

LEAD-FREE

ASSEMBLY LOT CODE

X = PART NUMBER CODE REFERENCE :
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303

S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRFML8244

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
W
WEEK
1
01
A
2011 2001
2012 2002
2
02
B
3
03
C
2013 2003
2014 2004
4
04
D
5
2015 2005
6
2016 2006
2017 2007
7
8
2018 2008
2019 2009
9
0
24
X
2020 2010
25
Y
26
Z

X = IRLML2244
Y = IRLML2246

W = (27-52) IF PRECEDED BY A LETTER
YEAR

Z = IRFML9244

DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C

2011
2012
2013
2014
2015
2016
2017
2018
2019
2020

2001
2002
2003
2004
2005
2006
2007
2008
2009
2010

Y
A
B
C
D
E
F
G
H
J
K

WORK
WEEK

W

27
28
29
30

A
B
C
D

50
51
52

X
Y
Z

Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7

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Micro3™(SOT-23/TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)

2.05 ( .080 )
1.95 ( .077 )

1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )

TR

FEED DIRECTION

1.85 ( .072 )
1.65 ( .065 )

3.55 ( .139 )
3.45 ( .136 )

4.1 ( .161 )
3.9 ( .154 )

1.32 ( .051 )
1.12 ( .045 )

8.3 ( .326 )
7.9 ( .312 )

0.35 ( .013 )
0.25 ( .010 )

1.1 ( .043 )
0.9 ( .036 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

8

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IRLML6402PbF
†

Qualification information

Consumer

Qualification level

(per JE DEC JE S D47F

Moisture Sensitivity Level

Micro3™ (SOT-23)

RoHS compliant

††

guidelines)
MS L1
††

(per JE DE C J-S TD-020D )
Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release

Revision History
Date

Comment

4/28/2014

• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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