1966_SC 12_RCA_Transistor_Manual 1966 SC 12 RCA Transistor Manual
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CONTENTS
MATERIALS, JUNCTIONS, AND DEVICES .............................................................
3
Semiconductor Materials, P-N Junctions, Current Flow,
N-P-N and P-N-P Structures, Types of Devices
TRANSISTOR DESIGNS AND CIRCUIT CONFIGURATIONS ............................
10
Design and Fabrication, Basic Circuits
TRANSISTOR CHARACTERISTICS ............................................................................
TRANSISTOR APPLICATIONS ......................................................................................
14
18
General System Functions; Biasing; Bias Stability; ·Coupling; Detection; Amplification; TV Scanning, Sync, and
Deflection; Oscillation; Frequency Conversion; Switching
MOS FIELD·EFFECT TRANSISTORS ........................................................................
Theory of Operation, Fabrication, Electrical Characteristics, General Circuit Configurations, Applications, Handling
Considerations
89
.
TRANSISTOR MOUNTING, TESTING, AND RELIABILITy................................ 106
Electrical Connections, Testing, Transient Effects, Heat
Sinks, Shielding, High-Frequency Considerations, Filters
INTERPRETATION OF TRANSISTOR DATA ..........................................................
TRANSISTOR SYMBOLS ................................................................................................
RCA MILITARY·SPECIFICATION TRANSISTORS ................................................
TRANSISTOR SELECTION CHARTS ........................................................................
TECHNICAL DATA FOR RCA TRANSISTORS ..........................................................
ABBREVIATED DATA FOR DISCONTINUED TRANSISTORS ............................
SILICON RECTIFIERS ....................................................................................................
111
113
116
117
120
333
335
Thermal Considerations, Reverse Characteristics, Forward
Characteristics, Ratings, Overload Protection, Series and
Parallel Arrangements, Circuit Factors, Capacitive-Load
Circuits, Heat Sinks
SILICON CONTROLLED RECTIFIERS ...................................................................... 352
Construction, Current-Voltage Characteristics, Maximum
Ratings, Triggering Characteristics, Switching Characteristics, Overload ProteCtion, Power Control, Current Ratios
TUNNEL DIODES AND OTHER SEMICONDUCTOR DIODES ............................ 362
Tunnel Diodes, High-Current Tunnel Diodes, Tunnel Rectifiers,Varactor Diodes, Voltage-Reference Diodes, Compensating Diodes
SYMBOLS FOR RCA RECTIFIERS, SCR's, AND DIODES ..................................
RCA MILITARY·SPECIFICATION RECTIFIERS ....................................................
TECHNICAL DATA FOR RCA RECTIFIERS, SCR's, AND DIODES ................
OUTLINES ............................................................................................................................
MOUNTING HARDWARE ................................................................................................
CIRCUITS ............................................................................................................................
RCA TECHNICAL PUBLICATIONS ,...........................................................................
INDEX TO RCA SEMICONDUCTOR DEVICES ........................................................
INDEX ....................................................................................................................................
Information furnished by RCA is believed to be accurate and reliable.
However. no respGnsibility is assumed by RCA for it. use; nor for any
infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise .
under any pa.tent or patent rights Gf RCA.
370
371
372
380
389
'391
471
473
477
RCA
Transistor Manual
This manual, like its preceding edition,
has been prepared to assist those who work
or experiment with semiconductor devices
and circuits. It will be useful to engineers,
educators, students, radio amateurs, hobbyists, and others technically interested in transistors, silicon rectifiers, silicon controlled
rectifiers, varactor diodes, and tunnel diodes.
This edition has been thoroughly revised to cover the latest changes in semiconductor-device technology and applications.
The TECHNICAL DATA Section, as well as
the text material, has been greatly expanded
and brought up to date. Of particular interest
to the hobbyist and experimenter are the
many practical and timely additions to the
CIRCUITS Section.
RADIO CORPORATION OF AMERICA
Electronic Components and Devices
Harrison, New Jersey
Copyright 1966 by .Radio Corporation of America
(All rights reserved)
Trade Mark(s) Registered
Marca(s) Registrada(s)
3-66
Printed in U.S.A.
Electrode Configurations Used in
RCAMOS Field-Effect Transistors
and RCA Overlay Transistors
OVERLAY TRANSISTORS
MOS FIELD·EFFECT TRANSISTO
HC
3
Materials, Junctions,
and Devices
devices are
SEMICONDUCTOR
small but versatile units that can
perform an amazing variety of control functions in electronic equipment.
Like other electron devices, they have
the ability to control almost instantly
the movement of charges of electricity. They are used as rectifiers,
detectors, amplifiers, oscillators,
electronic switches, mixers, and
modulators.
In addition, semiconductor devices
have many important advantages
over other types of electron devices.
They are very small and light in
weight (some are less than an inch
lop.g and weigh just a fraction of an
ounce). They have no filaments or
heaters, and therefore require no
heating power or warm-up time.
They consume very little power. They
are solid in construction, extremely
rugged, free from microphonics, and
can be made impervious to many severe environmental conditions. The
circuits required for their operation
are usually simple.
SEMICONDUCTOR MATERIALS
Unlike other electron devices, which
depend for their functioning on the
flow of electric charges through a
vacuum or a gas, semiconductor devices make use of the flow of current
in a solid. In general, all materials
may be classified in three major
categories-conductors, semiconductors, and insulators-depending upon
their ability to conduct an electric
current. As the name indicates, a
semiconductor material has poorer
conductivity than a conductor, but
better conductivity than an insulator.
The materials most often used in
semiconductor devices are germanium and silicon. Germanium has
higher electrical conductivity (less
resistance to current flow) than
silicon, and is used in most low- and
medium-power diodes and transistors. Silicon is more suitable for
high-power devices than germanium.
One reason is that it can be used at
much higher temperatures. A relatively new material which combines
the principal desirable features of
both germanium and silicon is gallium arsenide. When further experience with this material has been
obtained, it is expected to find much
wider use in semiconductor devices.
Resistivity
The ability of a material to conduct current (conductivity) is directly proportional to the number of
free (loosely held) electrons in the
material. Good conductors, such as
silver, copper, and aluminum, have
large numbers of free electrons; their
resistivities are of the order of a
few millionths of an ohm-centimeter.
Insulators such as glass, rubber, and
mica, which have very few loosely
held electrons, have resistivities as
high as several million ohm-centimeters.
Semiconductor materials lie in the
range between these two extremes,
RCA Transistor Manual
as shown in Fig. 1. Pure germanium
has a resistivity of 60 ohm-centimeters. Pure silicon has a considerably higher resistivity, in the order
of 60,000 ohm-centimeters. As used
in semiconductor devices, however,
these materials contain carefully controlled amounts of certain impurities
INCREASING RESISTIVITY-+
10- 6
OHM-CM
I
10-3
I
COPPER
..
I
I
103
I
I
I
I
I
I
I
106
I
I
I
GERMANIUM SILICON GLASS
INCREASING CONDUCTIVITY
Figure 1. Resistivity of typical conductor,
semiconductors, and insulator.
which reduce their resistivity to
about 2 ohm-centimeters at room
temperature (this resistivity decreases rapidly as the temperature
rises).
Impurities
Carefully prepared semiconductor
materials have a crystal structure.
In this type of structure, which is
called a lattice, the outer or valence
electrons of individual atoms are
tightly bound to the electrons of adjacent atoms in electron-pair bonds,
as shown in Fig. 2. Because such a
it would be necessary to apply high
temperatures or strong electric fields.
Another way to alter the lattice
structure and thereby obtain free
electrons, however, is to add small
amounts of other elements having a
different atomic structure. By the addition of almost infinitesimal amounts
of such other elements, called "impurities", the basic electrical properties of pure semiconductor materials
can be modified and controlled. The
ratio of impurity to the semiconductor material is usually extremely
small, in the order of one part in
ten million.
When the impurity elements are
added to the semiconductor material,
impurity atoms take the place of
semiconductor atoms in the lattice
structure. If the impurity atoms
added have the same number of valence electrons as the atoms of the
original semiconductor material, they
fit neatly into the lattice, forming
the required number of electron-pair
bonds with semiconductor atoms. In
this case, the electrical properties
of the material are essentially unchanged.
When the impurity atom has one
more valence electron than the semiccnductor atom, however, this extra
electron cannot form an electronpair bond because no adjacent valence electron is available. The excess
electron is then held very loosely by
the atom, as shown in Fig. 3, and
SEMICONDUCTOR
ATOMS
Figure 2. Crystal lattice structure.
structure has no loosely held electrons, semiconductor materials are
poor conductors under normal conditions. In order to separate the electron-pair bonds and provide free
electrons for electrical conduction,
Figure 3. Lattice structure of n-type
material.
5
Materials, Junctions, and Devices
requires only slight excitation to
break away. Consequently, the presence of such excess electrons makes
the material a better conductor, i.e.,
its resistance to current flow is
reduced.
Impurity elements which are added
to germanium and silicon crystals to
provide excess electrons include arsenic and antimony. When these elements are introduced, the resulting
material is called n-type because the
excess free electrons have a negative
charge. (It should be noted, however,
that the negative charge of the electrons is balanced by an equivalent
positive charge in the center of the
impurity atoms. Therefore, the net
electrical charge of the semiconductor material is not changed.)
A different effect is produced when
an impurity atom having one less
valence electron than the semiconductor atom is substituted in the
lattice structure. Although all the
valence electrons of the impurity
atom form electron-pair bonds with
electrons of neighboring semiconductor atoms, one of the bonds in the
lattice structure cannot be completed
because the impurity atom lacks the
final valence electron. As a result, a
vacancy or "hole" exists in the lattice, as shown in Fig. 4. An electron
from an adjacent electron-pair bond
may then absorb enough energy to
break its bond and move through the
lattice bo fill the hole. As in the
case of excess electrons, the presence
of "holes" encourages the flow of
electrons in the semiconductor material; consequently, the conductivity
is increased and the resistivity is
reduced.
The vacancy or hole in the crystal
structure is considered to have a
positive electrical charge because it
represents the absence of an electron.
(Again, however, the net charge of
the crystal is unchanged.) Semiconductor material which contains
these "holes" or positive charges is
called p-type material. P-type materials are formed by the addition of
aluminum, gallium, or indium.
Although the difference in the
chemical composition of n-type and
p-type materials is slight, the differences in the electrical characteristics
of the two types are substantial, and
are very important in the operation
of semiconductor devices.
P-N JUNCTIONS
When n-type and
are joined together,
5, an unusual but
phenomenon occurs
p-type materials
as shown in Fig.
very important
at the interface
P-N JUNCTION
P-TYPE MATERIAL
\
N-TYPE MATERIAL
/
',J
ELECTRONS
Figure 5. Interaction of holes and electrons
at p·n Junction.
Figure 4. Lattice structure of p·type
material.
where the two materials meet (called
the p-n junction). An interaction
takes place between the two types
of material at the junction as a result of the holes in one material and
the excess electrons in the other.
When a p-n junction is fonned,
some of the free electrons from the
n-type material diffuse aCrOSs the
junction and recombine with holes in
~
RCA Transistor Manual
the lattice structure of the p-type
material; similarly, some of the holes
in the p-type material diffuse across
the junction and recombine with free
electrons in the lattice structure of
the n-type material. This interaction
or diffusion is brought into equilibrium by a small space-charge region
(sometimes called the transition region or depletion layer). The p-type
material thus acquires a slight negative charge and the n-type material
acquires a slight positive charge.
The potential gradient established
across the space-charge region by the
diffusion process is represented in
Fig. 6 by an imaginary battery
connected across the junction. (The
JUNCTION
II
P
I
N
I
,
I
I
,
L
-i ~J
- +
IMAGINARY
SPACE-CHARGE
EQUIVALENT
BATTERY
Figure 6. Potential gradient across space·
charge region.
battery symbol is shown only to
represent the internal effects; the
potential is not directly measurable.)
In the absence of external circuits or
voltages, this potential gradient discourages further diffusion across the
p-n junction because electrons from
the n-type material are repelled by
the slight negative charge induced
in the p-type material and holes from
the p-type material are repelled by
the slight positive charge induced in
-I
the n-type material. In effect, therefore, the potential gradient (or
energy barrier, as it is sometimes
called) prevents total interaction between the two types of material, and
thus preserves the differences in their
characteristics.
CURRENT FLOW
When an external battery is connected across a p-n junction, the
amount of current flow is determined
by the polarity of the applied voltage
and its effect on the space-charge
region. In Fig. 7a, the positive terminal of the battery is connected to
the n-type material and the negative
terminal to the p-type material. In
this arrangement, the free electrons
in the n-type material are attracted
toward the positive terminal of the
battery and away from the junction.
At the same time, holes from the
p-type material are attracted toward
the negative terminal of the battery
and away from the junction. As a
result, the space-charge region at the
junction becomes effectively wider,
and the potential gradient increases
until it approaches the potential of
the external battery. Current flow
is then extremely small because no
voltage difference (electric field) exists across either the p-type or the
n-type region. Under these conditions, the p-n junction is said to be
reverse-biased.
In Fig. 7b, the positive terminal of
the external battery is connected to
the p-type material and the negative
terminal to the n-type material. In
this arrangement, electrons in the
p-type material near the positive ter-
ELECTRON FLOW
ELECTRON FLOW
J'
.-----1', P'I II Nt,' - - ,
l:.++,
.----1'L P
'---_ _ _ _
-111'1--,+,.-------'
'-----"""l+l!IIF-------l
(a) REVERSE BIAS
(b) FORWARD BIAS
I
I
I
N jLt-_--.
!:Iii
Figure 7. Electron current flow in biased p-n junctians.
Materials, Junctions, and De-vices
minal of the battery·· break their
electron-pair bonds and enter the
battery, creating new holes. At the
same time, electrons from the negative terminal of the battery enter the
n-type material and diffuse toward
the junction. As a result, the spacecharge region becomes effectively
narrower, and the energy barrier decreases to an insignificant value. Exces·s electrons from the n-type material can then penetrate the spacecharge region, flow across the junction, and move by way of the holes
in the p-type material toward the
positive terminal of the battery. This
electron flow continues as long as
the external voltage is applied, Under these conditions, the junction is
said to be forward-biased.
The generalized .voltage-current
characteristic for a p-n junction in
Fig. 8 shows both the reverse-bias
and forward-bias regions. In the
forward-bias region, current rises
7
\,.,-.'
equivalent to a high-resistance element (low current for a given applied voltage), while a junction
biased in the forward direction is
equivalent to a low-resistance element (high current for a given applied voltage). Because the power
developed by a given current is
greater in a high-resistance element
than in a low-resistance element
(P=J2R), power gain can be obtained in a structure containing two
such resistance elements if the current flow is not materially reduced.
A device containing two p-n junctions biased in opposite directions
can operate in this fashion.
Such a two-junction device is
shown in Fig. 9. The thick end layers
OUTPUT
CURRENTlmAlt
FORWARD
CURRENT
REVERSE
CURRENT
!
CURRENT ("AI
Figure 8. Voltage·current characteristic for
a p-n junction.
rapidly· as the voltage is increased
and is quite high. Current in the
reverse-bias region is usually much
lower. Excessive voltage (bias) in
either direction should be avoided in
normal applications because excessive currents and the resulting high
temperatures may permanently damage the semiconductor device.
N·P~N·· AND
P·N·P STRUCTURES
Fig. 7 shows that a p-n junction
biased in the reverse direction is
Figure 9. N·P-N structure biased for power
gain.
are made of the same type of material (n-type in this case), and are
separated by a very thin layer of the
opposite type of material (p-type in
the device shown). By means of the·
external batteries, the left-hand (n-p)
junction is biased in the forward
direction to provide a low-resistance
input circuit, and the right-hand
(p-n) junction is biased in the reverse direction to provide a highresistance output circuit.
Electrons flow easily from the lefthand n-type region to the centerptype region as a result of the forward
biasing. Most of these electrons diffuse through the thin p-type region,
however,and are attracted by the
positive potential of the external battery across the right-hand junction.
In practical devices, approximately
95 to 99.5 per cent of the electron
current reaches the right-hand ntype region. This high percentage of
RCA Transistor Manual
·.e1ml'ent penetration ,provides pow,.
gain in the· high-resistance"' output
circuit .and is the 'basis for transistor
amplification capability.
The operation of p-n-p devices is
similar to that shown for the n-p-n
device, except that the bias-voltage
.polarities are reversed, and electroncurrent flow is in the opposite direction. (Many discussions of semiconductor theory assume that the "holes"
in semiconductor material constitute
the charge carriers in p-n-p devices,
and discuss "hole' currents"for the'se
devices and "electron currents" for
n-p-n devices. Other texts discuss
neither hole current nor electron current,but rather "conventional current
flow", which is assumed to travel
through a circuit in a direction from
the positive terminal of the external
battery back to its negative terminal.
For the· sake of simplicity, this dis, .. cussion wilLbecrestrictedto the con','..Capt of electron current flow, which
travels from a negative to a positive
terminal.)
TYPES OF DEVICES
The simplest type of semiconductor device is the diode, which is represented by the symbol shown in Fig.
10. Structurally, the diode is basically
a p-n junction similar to those shown
in Fig. 7. The n-type material which
N-TYPE
MATERIAL"'CATHODE 0
S
P-TYPE
/MATERIAL
0 ANODE
Figure 10. Schematic symbol for a semi,
conductor diode.
serves as the Regative electrode is
referred to"as· the catlwde, ,and the
p-type material which serves as the
, p'Ositive electrode is, referred to as
the anode. The 'arrow symbol used
::.dor the ,an'Olie,:'Tepres~nts the :direc"
tion of '.tconventional· current ,flow"
mentioned above; electron current
flows in a direction opposite to the
arrow.
~
Because the junction ,.diode con(lurrent more easily in one
direction than in the other, it is an
,effective rectifying device. If an ac
signal is applied, as shown in Fig.
11, electron current flows freely during the positive half cycle, but little
~'ducts
LOAD
Figure 11. Simple diode rectifying circuit.
or no current flows ,during the negative half cycle.
One of, the most widely used types
,of semiconductor diode is the silicon rectifier. These devices are available in a wide range of current
capabilities, ranging from tenths of
an ampere to 40 amperes or more,
and are capable of operation at voltages as high as 800 volts or more.
Parallel and series arrangements of
silicon rectifiers permit even further
extension of current and voltage
limits. Characteristics and applications of these devices are discussed
in detail in the section on Silicon
Rectifiers.
If two p-type and n-type semiconductor materials are arranged
alternately in series, a device is produced which behaves as a conventional rectifier in the reverse direction
and as a series combination of an
electronic switch and a rectifier in
the forward direction. Conduction in
the forward direction can then be
controlled or "gated" by operation of
the ,electronic' switch. Such devices
;'are discussed' in 'the section on Silicon Controlled Rectifiers.
g'everal variations of the basic
"junction diode structure have 'been
develop.ed for use" in sp,ecial applications. One of the most important of
these developments .is the tunnel
diode, ,which is used for amplifica-
9
Materials, Junctions, and Devices
tion, switching, and pulse generation.
This special diode is described in the
section on Tunnel Diodes and Other
Semiconductor Diodes.
When a second junction is added
to a semiconductor diode to provide
power or_ voltage amplification (as
shown in Fig. 9), the resulting device is called a transistor. The three
regions _of the device are called the
emitter, the base, and the collector,
as shown in Fig. 12. In normal operation, the emitter-to-base junction is
EMITTER
BASE
COLLECTOR
Figure -12. -Functional diagram of transistor
structure.
biased in the forward direction, and
the .collector-to-base junction in the
reverse direction.
Different symbols are used for
n-p-n and p-n-p transistors to show
the difference in the direction of current flow in the two types of devices.
In the n-p-n transistor shown in Fig.
13a, electrons flow from the emitter
to the collector. In the p-n-p transistor shown in Fig. 13b, electrons
flow from the collector to the emitter. In other words, the direction of
dc electron current is always opposite to that of the arrow on the
emitter lead. (As in the case of semiconductor diodes, the arrow indicates
EMITTER
COLLECTOR
(a) N-P-'N TRANSISTOR
Figure 13.
the -direction of "conventional current flow" in the circuit.)
The first two letters of the n-p-n
and p-n-p designations indicate the
respective polarities of the voltages
applied to the emitter and the
collector in normal operation. In
an n-p-n transistor, the emitter is
made negative with respect to both
the collector and the base, and the
collector is made positive with respect to both the emitter and the
base. In a p-n-p transistor, the emitter is made positive with respect to
both the collector and the base, and
the collector is made negative with
respect to both the emitter and the
base.
The transistor, which is a threeelement device, can be used for a
wide variety of control functions, including amplification, oscillation, and
frequency conversion. Transistor
characteristics and applications are
discussed in detail in the following
sections.
A relatively new type of transistor, the MOS field-effect transistor,
utilizes a metal control electrode to
modulate the conductivity of the
semiconductor material. Because of
their very high input impedance and
square-law transfer characteristics,
MOS transistors are especially suitable for use as voltage amplifiers.
Characteristics and applications of
these devices are described in the
section on MOS Field-Effect Transistors.
EMITTER
COLLECTOR
(b) P-N-'P TRANSISTOR
Schematic· symbols for transistors.
10
Transistor '. Designs and
Circuit Configurations·
performance of transistors
T inHEelectronic
equipment depends
on many factors besides the basic
characteristics of the semiconductor
material. The two most important
factors are the design and fabrication of the transistor structure and
the general circuit configuration
used.
DESIGN AND FABRICATION
The ultimate aim of . all transistor fabrication techniques is the
construction of two parallel p-n junctions with controlled spacing between
the junctions and controlled impurity
levels on both sides of each junction.
A variety of structures has been
developed in the course of transistor
evolution.
The earliest transistors made were
of the point-contact type. In this
type of structure, two pointed wires
were placed next to each other on an
n-type block of semiconductor material. The p-n junctions were formed
by electrical pUlsing of the. wires.
This type has been superseded by
junction transistors, which are fabricated by the various alloy, diffusion,
and crystal-growth techniques described below.
In grown-junction transistors, the
impurity content of the semiconductor material is changed during the
growth of the original crystal ingot
to providethep-n-p or n-p-n regions;
The grown crystal is then sliced
into a large number. of small-area
devices, and contacts are made to
each region of the devices. The' finished transistor is encased in plastic
or a hermetically sealed enclosure.
In alloy-junction transistors, two
small "dots" of a p-type or n-type
impurity element are plactld on opposite sides of a thin wafer of n-type
or p-type semiconductor material,
respectively; as shown in Fig. 14..
COLLECTOR
EMITTER
Figure 14. Structure of alloy.junction
transistor.
After proper heating, the impurity
"dots" alloy with the semiconductor~
material to form the regions for the
emitter and collector junctions. T.he
base connection in this structure is
made to the original semiconductor
wafer.
The drift-field transistor is a modified. alloy-junction device in. which
the impurity concentration in the
base wafer is diffused or graded, as
shown. in Fig. 15. Two advantages
are derived from this structure:
(a) the resultant built-in voltage .01'
"drift field" speeds. current flow, and
(b) the ability to use a heavy.impurity concentration. in._ the .vicinity
of the emitter and a light conceD'tration in the vicinity of the collector makes it possible to minimize
Transistor Designs and Circuit Configurations
capacitive charging times. Both
these advantages lead to a substantial extension of the frequency performance over the alloy-junction
device.
COLLECTOR
EMITTER
Figure 15.
Structure of drift-field transistor.
Mesa and planar transistors use
newer construction techniques which
are better suited to many applications than the grown-junction or
alloy methods. These transistors involve two basic processes: (1) the
use of diffusion masking materials
and photolithographic techniques to
obtain a planar structure in which
all the p-n junctions are buried under a protective passivating layer,
and (2) the use of a separate collector-contact diffusion or an epitaxial
growth to reduce the electrical series
resistance in the collector. In these
types, the original semiconductor
wafer serves as the collector. The
base region is diffused into the
wafer, and the emitter "dot" or region is then alloyed or diffused into
the base region. A "mesa" or flattopped peak may then be etched to
reduce the collector area at the basecollector junction. The mesa structure is inherently rugged, has large
EMITTER CONTACT
Figure 16.
11
power-dissipation capability, and can
operate at very high frequencies.
Fig. 16 shows the structure of
double-diffused epitaxial mesa and
planar structures in production
today. The grading of the impurity
concentration in the base region results in a drift field and in reduced
base-lead resistance. The use of a
diffused emitter region permits tight
geometry control. The use of a relatively light impurity concentration
in the collector region results in high
collector-breakdown voltages and low
collector-junction capacitance.
A new emitter electrode structure
called an "overlay" is used in some
power transistors to improve highfrequency capability. In this overlay
structure (shown in the frontispiece
on page 2), a large number of separate emitters are tied together by
diffused and metalized regions. This
approach increases the emitter edgeto-area ratio and reduces the input
time constant of the transistor. The
desired overlay structure is fabricated by carefully controlled diffusion
and precise photographic processes.
BASIC CIRCUITS
There are three basic ways of connecting transistors in a circuit:
common-base, common-emitter, and
common-collector. In the eommonbase (or grounded-base) connection
shown in Fig. 17, the signal is introduced into the emitter-base circuit
and extracted from the collector-base
circuit. (Thus the base element of the
transistor is common to both the inEMITTER CONTACT
Structure of (a) double-diffused epitaxial mesa transistor and (b) doubledIffused epitaxial planar transistor.
12
RCA Transistor Manual
put and output circuits.) Because the
input or emitter-base circuit has a low
impedance (resistance plus reactance) in the order of 0.5 to 50 ohms,
and the output or collector-base circuit has a high impedance in the
order of 1000 ohms to one megohm,
the voltage or power gain in this
type of configuration may be in the
order of 1500.
, C<
4\1
s'
+ B
olLlJ;-
A\JT
D
+
f!I.
,
I
D' -
Figure'l7. Common-base circuit
configuration.
The direction of the arrows in Fig.
17 indicates electron current flow.
As stated previously, most of the current from the emitter flows to the collector; the remainder flows through
the base. In practical transistors,
from 95 to 99.5 per cent of the emitter current reaches the collector. The
current gain of this configuration,
therefore, is ,always less than unity,
usually in the order of 0.95 to 0.995.
The waveforms in Fig. 17 represent the input voltage produced by
the signal generator e. and the output voltage developed across the
load resistor RL • When the input
voltage is positive, as shown at AB,
it opposes the forward bias produced
by the base-emitter battery, and thus
reduces current flow through the
n-p-n transistor. The reduced electron current flow through RL then
causes the top point of the resistor
to become less negative (or more
positive) with respect to the lower
point, as shown at A'B' on the output waveform. Conversely, when the
input signal is negative, as at CD,
the output signal is also negative,
as at C'D'. Thus, the phase of the
signal remains unchanged in this
circuit, i.e., there is no voltage phase
reversal between the input and the
output of a common-base amplifier.
In the common-emitter (or
grounded-emitter) connection shown
in Fig. 18, the signal is introduced
into the base-emitter circuit and extracted from the collector-emitter
circuit. This configuration has more
moderate input and output impedances than the common-base circuit.
The input (base-emitter) impedance
is in the range of 20 to 5000 ohms,
and the output ( collector-emittter)
impedance is about 50 to 50,000
ohms. Power gains in the order of
10,000 (or approximately 40 dB) can
be realized with this circuit because
it provides both current gain and
voltage gain.
Current gain in the' commonemitter configuration is measured between the base and the collector,
rather than between the emitter and
the collector as in the common-base
circuit. Because a very small change
in base current produces a relatively
large change in collector current, the
current gain is always greater than
unity in a common-emitter circuit;
a typical value is about 50.
Figure 18. Common-emitter circuit
configuration.
The input signal voltage undergoes a phase reversal of 180 degrees
in a common-emitter amplifier, as
shown by the waveforms in Fig. 18.
When the input voltage is positive,
as shown at AB, it increases the
forward bias across the base-emitter
junction, and thus increases the total
current flow through the transistor.
The increased electron flow through
RL then causes the output voltage
Transistor Designs and Circuit Configurations
to become negative, as shown at
A'B'. During the second half-cycle
of the waveform, the process is reversed, i.e., when the input signal is
negative, the output signal is positive (as shown at CD and C'D'.)
The third type of connection, shown
in Fig. 19, is the common-collector
(or grounded-collector) circuit. In
this configuration, the signal is intro0.981:-0.021:
B
+~
o
-
A
\jI
0
Figure 19.
Common·collector circuit
configuration.
13
duced into the base-collector circuit
and extracted from the emittercollector circuit. Because the input
impedance of the transistor is high
and the output impedance low in
this connection, the voltage gain is
less than unity and the power gain
is usually lower than that obtained
in either a common-base or a common-emitter circuit. The commoncollector circuit is used primarily as
an impedance-matching device. As in
the case of the common-base circuit,
there is no phase reversal of the signal between the input and the output.
The circuits shown in Figs. 17
through 19 are biased for n-p-n transistors. When p-n-p transistors are
used, the polarities of the batteries
must be reversed. The voltage phase
relationships, however, remain the
same.
14
Transistor Characteristics
term "characteristic" is used
THE
to identify the distinguishing electrical features and values of a transistor. These values may be shown
in curve form or they may be tabulated. When the characteristics values
are given in curve form, the curves
may be used for the determination
of transistor performance and the
calculation of additional transistor
parameters.
Characteristics values are obtained
from electrical measurements of transistors in various circuits under certain definite conditions of current and
voltage. Static characteristics are obtained with dc potentials applied to
the transistor electrodes. Dynamic
characteristics are obtained with an
ac voltage on one electrode under
various conditions of dc potentials
on all the electrodes. The dynamic
characteristics, therefore, are indicative of the performance capabilities
of the transistor under actual working conditions.
Published data for transistors include both electrode characteristic
curves and transfer characteristic
curves. These curves present the
same information, but in two different forms to provide more useful
data. Because transistors are used
most often in the common-emitter
configuration, characteristic curves
are usually shown for the collector
or output electrode. The collectorcharacteristic curve is obtained by
varying collector-to-emitter voltage
and measuring collector current for
different values of base current. The
transfer-characteristic curve is obtained by varying the base-to-emitter
(bias) voltage or current at a specified or constant collector voltage,
and measuring collector current. A
collector-characteristic family of
curves is shown in Fig. 20. Fig. 21
shows transfer-characteristic curves
for the same transistor.
One of the most important characteristics of a transistor is its
i
TYPE 2N3053
COLLECTOR-TO-EMITTER VOLTS (VCE)7IO
cr
J
3
i 400
'(> •. -
1~,fJ
I
~
-0
~
~300
~I
!z
II!
200
II:
B
II:
2
4
6
8
10
COLLECTOR-Ta-EMITTER VOLTS (VCE)
92CS-12327T
Figure 20.
Collector-characteristic curves.
~
~
r/
~.lY
100
o
I--
It,~~~
-~
0.2
0.4
.. ~
,,"
0.6
0.8
1.0
1.2
BASE-TO-EMITTER VOLTS (VBE)
Figure 21.
92CS-12328T
Transfer-characteristic curves.
15
Transistor Characteristics
forward current-transfer ratio, i.e.,
the :ratio of the current in the output
electrode to the current in the input
electrode. Because of the different
ways in which transistors may be
connected in circuits, the forward
current-transfer ratio is specified for
a particular circuit configuration.
The common-base forward currenttransfer ratio is often called alpha
(or a). and the common-emitter forward current-transfer ratio is often
called beta (or (1).
In the common-base circuit shown
in Fig. 17, the emitter is the input
electrode and the collector is the
output electrode. The dc alpha, therefore, is the ratio of the dc collector
current Ie to the dc emitter current
1m:
ELECTRON
FLOW
Ie=I50"A
'------It!I-----i
Ie
0.981
a = IE = - I- = 0.98
In the common-emitter circuit
shown in Fig. 18, the base is the
input electrode and the collector is
the output electrode. The dc beta,
therefore, is the ratio of the dc collector current Ie to the dc base current In:
f3 = Ie = 0.98 I = 49
IB
0.02 I
Because the ratios given above are
based on dc currents, they are properly called dc alpha and dc beta. It
is more common, however, ·for the
current-transfer ratio to be given in
terms of the ratio of signal currents
in the input and output electrodes, or
the ratio of a change in the output
current to the input signal current
which causes the change. Fig. 22
shows typical electrode currents in
a common-emitter circuit under nosignal conditions and with a onemicroampere signal applied to the
base. The signal current of one
microampere in the base causes a
change of 49 microamperes (147-98)
in the collector current. Thus the ac
beta for the transistor is 49.
The frequency cutoll of a transistor is defined as the frequency at
+
-
Figure 22. Electrode currents under nosignal and signal conditions.
which the value of alpha (for a
common-base circuit) or beta (for a
common-emitter circuit) drops to
0.707 times its one-kilocycle value.
The gain-bandwidth product is the
frequency at which the commonemitter forward current-transfer
ratio (beta) is equal to unity. These
characteristics provide an approximate indication of the useful frequency range of the device, and
help to determine the most suitable
circuit configuration for a particular
application. Fig. 23 shows typical
curves of alpha and beta as functions
of frequency.
Extrinsic transconductance may
be defined as the quotient of a small
change in collector current divided
by the small change in emitter-tobase voltage producing it, under the
condition that other voltages remain
unchanged. Thus, if an emitter-tobase voltage change of 0.1 volt causes
a collector-current change of 3 milliamperes (0.003 ampere) with other
voltages constant, the transconductance is 0.003 divided by 0.1, or 0.03
mho. (A "mho" is the unit of conductance, and was named by spelling
RCA Transistor Manual
16
GAIN-BANElWIDTH
PRODUCT
100
I
!ZOIO
",-
II:!«
a~
0'"
II
~~ I (COMMON-BASEl
~c(
11:11:
el-
O.II-::-_.....-;;'_~::--........-;;--r;:--'-'T:;-'...............
102
103
104
105
106
FREQUENCY-cIs
107
Figure 23. Forward current-transfer ratio
as a function of frequency.
"ohm" backward.) For convenience,
a millionth of a mho, or a micromho (I'mho), is used to express transconductance. Thus, in the example,
0.03 mho is 30,000 micromhos.
Cutoff currents are small dc reverse
currents which flow when.a transistor
is biased into non-conduction. They
consist of leakage currents, which
are related to the surface character"
istics of the semiconductor material,
and saturation currents, which are
related to the impurity concentration
in the material and which increase
with increasing temperatures. Collector-cutoff current is the dc current
which flows in the reverse-biased
collector-to-base circuit wherr the
emitter-to-base circuit is open.
Emitter-cutoff current is the current which flows in the reversebiased emitter-to-base circuit when
the collector-to-base circuit is open.
Transistor breakdown voltages define the voltage values between two
specified electrodes at which,the crys-tal structure changes and current
begins to rise rapidly. The voltage
then remains relatively constant over
a wide range of electrode currents.
Breakdown voltages may be measured with the third electrode open,
shorted, or biased in either the forward or the reverse direction. For
example, Fig. 24 shows a series of
collector-characteristic curves for
different base-bias conditions. It can
be seen that the collector~to~emitter
breakdown voltage increases as the
base-to-emitter bias decreases from
the normal forward values through
zero to reverse values. The symbols
shown on the abscissa are sometimes
used to designate coUector-to-emitter,
breakdown voltages with the base
open (BVCEO), with external base-toemitter resistance (BVCER), with the
base shorted to the emitter (BVCES),
and with a reverse base-to-emitter
voltage (BVOEV).
As the resistance in the base-toemitter circuit decreases, the collector characteristic develops two
breakdown points, as shown in Fig.
24. After the initial breakdown, the
collector-to-emitter voltage decreases
with increasing collector current
until another breakdown occurs at a
lower voltage. This minimum collector-to-emitter breakdown voltage is
called the sustaining voltage_
In large-area power transistors,
there is a limiting mechanism
referred to as "second breakdown".
This condition is not a voltage breakdown, but rather an electrically and
thermally regenerative process in
-which current is focused in a very
small area of the order of the diameter of a human hair. The very
high current, together with the voltage across the transistor, causes a
localized heating that may melt a
minute hole from the collector to,the
emitter of the transistor and thus
cause a short circuit. This regenerative process is not initiated unless
certain high voltages and currents
are coincident for certain finite
lengths of time.
In conventional transistor structures, the limiting effects of second
breakdown vary directly with the-amplitude of .the applied _voltage and
inversely with the width of the base
region. These effects are most severe
in power transistors,.in which narrow base structures are used to
achieve -, good high-frequency response. In RCA "overlay" power
transistors, a special emitter configuration is used to provide greater
17
Transistor Characteristics
Ib
»)
0
...... VBE=O
vBE=O.S V.
-ReE'IO OHMS
I
I
BVCEO : BVCES
,
BVCER
BVCEV
COLLECTOR-TO-EMITTER VOLTAGE
Figure 24.
Typical collector·characteristic curves showing location of various breakdown
voltages.
current-handling capability and minimize the possibility of "hot spots"
occurring at the emitter-base junction. This new design extends the
range of power and frequency over
which transistors can be operated
before second breakdown begins to
limit performance.
The curves at the left of Fig. 24
show typical collector characteristics
under normal forward-bias conditions. For a given base input current,
the collector-to-emitter saturation
voltage is the minimum voltage required to maintain the transistor in
full conduction (i.e., in the saturation region). Under saturation conditions, a further increase in forward
bias produces no corresponding increase in collector current. Saturation
voltages are very important in switching applications, and are usually
specified for several conditions of
electrode currents and ambient temperatures.
Reach-through (or punch-through)
voltage defines the voltage value at
which the depletion region in the
collector region passes completely
through the base region and makes
contact at some point with the emitter region. This "reach-through"
phenomenon results in a relatively
low-resistance path between the
emitter and the collector, and causes
a sharp increase in current. Punchthrough voltage does not result in
permanent damage to a transistor,
provided there is sufficient impedance
in the power-supply source to limit
transistor dissipation to safe values.
Stored base charge is a measure
of the amount of charge which exists
in the base region of the transistor
at the time that forward bias is removed. This stored charge supports
an undiminished collector current in
the saturation region for some finite
time before' complete switching is
effected. This delay' interval, called
the "storage time", depends on the
degree of saturation into which the
transistor is driven. (This effect is
discussed in more detail under
"Switching" in the section on Transistor Applications.
18
Transistor Applications
diversified applications of tranThesistors
are treated in this section
under the major functional classifications of· Detection, Amplification,
TV Sync and Deflection, Oscillation,
Frequency Conversion, and ·Switching. The following general descriptions of basic radio, television,
communications, and computer systems indicate the types of circuits
used to perform the various specialized functions in these systems, and
serve as a guide to the specific applications material in this section. Because various coupling and biasing
methods are used in transistor circuits, bias and coupling arrangements are discussed separately before
specific applications are considered.
Bias stability requirements for transistor circuits are also described.
GENERAL SYSTEM FUNCTIONS
When speech, music, or video information is transmitted from a radio
or television station, the station
radiates a modulated radio-frequency
(rf) carrier. The function of a radio
or television receiver is simply to re-
Figure 25.
produce the modulating wave from
the modulated carrier.
As shown in Fig. 25, a superheterodyne radio receiver picks up the
transmitted modulated rf signal, amplifies it and converts it to a modulated intermediate-frequency (if)
signal, amplifies the modulated if
signal, separates the modulating signal from the basic carrier wave, and
amplifies the resulting audio signal
to a level sufficient to produce the
desired volume in a speaker. In addition, the receiver usually includes
some means of producing automatic
gain control (agc) of the modulated
signal before the audio information
is separated from the carrier.
The transmitted rf signal picked
up by the radio receiver may contain
either amplitude modulation (AM)
or frequency modulation (FM).
(These modulation techniques are
described later in the section on Detection.) In either case, amplification prior to the detector stage is
performed by tuned amplifier circuits
designed for the proper frequency
and bandwidth. Frequency conversion
is performed by mixer and oscillator
circuits or by a single converter stage
Simplified block diagram for a broadcast-band receiver.
19
Transistor Applications
which performs both mixer and oscillator functions. Separation of the
modulating signal is normally accomplished by one or more diodes in
a detector or discriminator circuit.
Amplification of the audio signal is
then performed by one or more audio
amplifier stages.
Audio-amplifier systems for phonograph or tape recordings are similar
to the stages after detection in a
radio receiver. The input to the amplifier is a low-power-Ievel audio
signal from the phonograph or magnetic-tape pickup head. This signal
is usually amplified through a preamplifier stage, one or more low-level
(pre-driver or driver) audio stages,
and an audio power amplifier. The
system may also include frequencyselective circuits which act as equalization networks and/or tone controls.
The operation of a television receiver is more complex than that of
a radio receiver, as shown by the
simplified block diagram in Fig. 26.
Figure 26:
radio, these functions are accomplished in rf-amplifier, mixer, and
local-oscillator stages. The if signal
is then amplified in if-amplifier
stages which provide the additional
gain required to bring the signal level
to an amplitUde suitable for detection.
After if amplification, the detected
signal is separated into sound and
picture information. The sound signal is amplified and processed to provide an audio signal which is fed to
an audio amplifier system similar to
those described above. The picture
(video) signal is passed through a
video amplifier stage which conveys
beam-intensity information to the
television picture tube and thus controls instantaneous "spot" brightness. At the same time, deflection
circuits cause the electron beam of
the picture tube to move the "spot"
across the faceplate horizontally and
vertically. Special "sync" signals derived from the video signal assure
that the horizontal and vertical
Simplified block diagram for a television receiver.
The tuner section of the receiver selects the proper rf signals for the desired channel frequency, amplifies
them, and converts them to a lower
intermediate frequency. As in a
scanning are timed so that the picture produced on the receiver exactly
duplicates the picture being viewed
by the camera or pickup tube.
A communications transceiver con-
20
RCA Transistor Manual
tains transmitting circuits, as well as
receiving circuits similar to those of
a radio receiver. The transmitter
portion of such a system consists of
two sections. In one section, the desired intelligence (voice, code, or the
like) is picked up and amplified
through one or more amplifier
stages (which are usually common to
the receiver portion) to a high-level
stage called a modulator. In the other
section, an rf signal of the desired
frequency is developed in an oscillator stage and amplified in one or more
rf-amplifier stages. The audio-frequency (af) modulating signal is impressed on the rf carrier in the final
rf-power-amplifier stage (high-level
modulation), in the rf low-level stage
(low-level modulation), or in both.
Fig. 27 shows a simplified block diagram of the transmitter portion of
a citizens-band transceiver that operates at a frequency of 27 megacycles per second. The transmitting
section of a communications system
may also include frequency-multiplier circuits which raise the frequency of the developed rf signal
as required.
cated analytical functions at very
high speed.
BIASING
For most non-switching applications, the operating point for a particular transistor is established by
the quiescent (dc, no-signal) values
of collector voltage and emitter current. In general, a transistor may be
considered as a current-operated device, i.e., the current flowing in the
emitter-base circuit controls the
current flowing in the collector circuit. The voltage and current values
selected, as well as the particular
biasing arrangement used, depend
upon both the transistor characteristics and the specific requirements
of the application.
As mentioned previously, biasing
of a transistor for most applications
consists of forward bias across the
emitter-base junction and reverse
bias across the collector-base junction. In Figs. 17, 18, and 19, two
batteries were used to establish bias
of the correct polarity for an n-p-n
transistor in the common-base, com-
27-McI,
CRYSTAL-CONTROLLED
OSCILLATOR
Figure 27.
Simplified block diagram for the transmitter portion
of a 27-Mc/s communications transceiver.
Basically, a computer system is designed to evaluate information supplied to it in such a way that a
predetermined output is obtained for
prescribed input conditions. This
evaluation is performed by switching
circuits (also called logic circuits or
"gates") which provide a binary output ("I" or "0"). Various types of
logic circuits can be combined in
large quantity to perform compli-
mon-emitter, and common-collector
circuits, respectively. Many variations of these basic circuits can also
be used. (In these simplified dc circuits, inductors and transformers are
represented only by their series resistance.)
A simplified biasing arrangement
for the common-base circuit is shown
in Fig. 28. Bias for both the collectorbase junction and the emitter-base
21
Transistor Applications
c,
(b)
(0)
Figure 28.
Biasing network for common-base circuit for (al n-p-n and (bl p-n-p transistors.
junction is obtained from the single
battery through the voltage-divider
network consisting of resisters It,
and RJ • (For the n-p-n transistor
shown in Fig. 28a, the emitter-base
junction is forward-biased because
the emitter is negative with respect
to the base, and the collector-base
junction is reverse-biased because
the collector is positive with respect
to the base, as shown. For the p-n-p
transistor shown in Fig. 28b, the
polarity of the battery and of the
electrolytic bypass capacitor C, is
reversed.) The electron current I
from the battery and through the
voltage divider causes a voltage drop
across resistor It, which biases the
base. The proper amount of current
then flows through R, so that the correct emitter potential is established
to provide forward bias relative to
the base. This emitter current establishes the amount of collector current
which, in turn, causes a voltage drop
across R •. Simply stated, the voltage
divider consisting of R. and R. establishes the base potential; the base
potential essentially establishes the
emitter potential; the emitter potential and resistor R, establish the
emitter current; the emitter current
establishes the collector current; and
the collector current and R. establish
the collector potential. R. is bypassed
with capacitor C, so that the base is
effectively grounded for ac signals.
A single battery can also be used
to bias the common-emitter circuit.
The simplified arrangement shown
in Fig. 29 is commonly called "fixed
bias". In this case, both the base and
the collector are made positive with
respect to the ~~mitter by means of
the battery. The base resistance RB
is then selected to provide the desired
base current h for the transistor
(which, in turn, establishes the desired emitter current IE), by means
of the following expression:
R _ VBB - VB.,
B_
h
where VBB is the battery supply voltage and VB., is the base-to-emitter
voltage of the transistor.
In the circuit shown, for example,
the battery voltage is six volts. The
200000
OHMS
Figure 29. "Fixed-bias" arrangement for
common-emitter circuit.
value of Rn was selected to provide
a base current of 27 microamperes,
as follows:
RB
6 -
0.6
= 27 X 10'"
=
200,000 ohms
The fixed-bias arrangement shown
in Fig. 29, however, is not a satisfactory method of biasing the base
in a common-emitter circuit. The
critical base current in this type of
circuit is very difficult to maintain
under fixed-bias conditions because
of variations between transistors
22
RCA Transistor Manual
and the sensitivity of these devices
to temperature changes. This problem is partially overcome in the "selfbias" arrangement shown in Fig. 30.
EC
3V
B
required forward bias across the
base-emitter junction. The value of
the base bias voltage is determined
by the current through the voltage
divider. This type of circuit provides
less gain than the circuit of Fig. 30,
but is commonly used because of its
inherent stability.
The common-emitter circuits shown
in Figs. 32 and 33 may be used to
provide stability and yet minimize
loss of gain. In Fig. 32, a resistor
Figure 30. "Self·bias" arrangement for
common-emitter circuit.
In this circuit, the base resistor is
tied directly to the collector. This
connection helps to stabilize the operating point because an increase or
decrease in collector current produces a corresponding decrease or
increase in base bias. The value of
RB is then determined as described
above, except that the collector voltage Vem is used in place of the supply voltage VBB:
RB
= Vcm In- VBm
3 -0.6
= 27 X 10-6 = 90,000 ohms
The arrangement shown in Fig. 30
overcomes many of the disadvantages of fixed bias, although it reduces the effective gain of the circuit.
In the bias method shown in Fig.
31, the voltage-divider network composed of R, and R. provides the
Figure 32.
Bias network using emitter
stabilizing resistor_
RE is added to the emitter circuit,
and the base resistor R. is returned
to the positive terminal of the battery instead of to the collector. The
emitter resistor Rm provides additional stability. It is bypassed with
capacitor Cm. The value of Cm depends on the lowest frequency to be
amplified.
In Fig. 33, the R.R. voltage-divider
network is split, and all ac feedback
currents through R. are shunted to
ground (bypassed) by capacitor C,.
RI
Figure 33.
Figure 31. Bias network using voltagedividel' arrangement for increased stability.
Bias network using split voltagedivider network.
The value of R. is usually larger
than the value of R.. The total resistance of R. and R. should equal
the resistance of Rt in Fig. 31.
In practical circuit applications,
23
Transistor Applications
any combination of the arrangements shown in Figs. 30, 31, 32, and
33 may be used. However, the stability of Figs. 30, 31, and 33 may be
poor unless the voltage drop across
the load resistor RI • is at least onethird the value of the supply voltage. The determining factors in the
selection of the biasing circuit are
usually gain and bias stability (which
is discussed later).
In many cases, the bias network
may include special elements to compensate for the effects of variations
in ambient temperature OJ' in supply voltage. For example, the thermistor (temperature-sensitive resistor) shown in Fig. 34a is used to
compensate for the rapid increase
of collector current with increasing
SUPPLY
VOLTAGE
B-
SUPPLY
VOLTAGE
B-
BIAS
BIAS
VOLTAGE
VOLTAGE
DIODE
(a)
(b)
rent for variations in both temperature and supply voltage. The forward-biased diode current determines
a bias voltage which establishes the
transistor idling current (collector
current under no-signal conditions).
As the temperature increases, this
bias voltage decreases. Because the
transistor characteristic also shifts
in the same direction and magnitude,
however, the idling current remains
essentially independent of temperature. Temperature stabilization with
a properly designed diode network is
SUbstantially better than that provided by most. thermistor bias networks. Any temperature-stabilizing
element should be thermally close to
the transistor being stabilized.
In addition, the diode bias current
varies in direct proportion with
changes in supply voltage. The resultant change in bias voltage is
small, however, so that the idling
current also changes in direct proportion to the supply voltage. Supply-voltage stabilization with a diode
biasing network reduces current
variation to about one-fifth that obtained when resistor or thermistor
bias is used for a germanium transistor and one-ftfteenthfor a silicon
transistor.
The bias networks of Figs. 29
through 33 are generally used in
class A circuits. Class B circuits
normally employ the bias networks
shown in Fig. 34. The bias resistor
values for class B circuits are generally much lower than those for
class A circuits.
Figure 34, Bias networks including (a) a
thermistor and (b) a temperature· and
voltage·compensating diode,
BIAS STABILITY
temperature. Because the thermistor
resistance decreases as the temperature increases, the emitter-to~base
bias voltage is reduced and the collector current tends to remain constant. The addition of the shunt and'
series'resistances provides most effective compensation over a desired
temperature range.
The diode biasing network shown
in Fig. 34b stabilize.s collector cur-
Because transistor currents tend
to increase with temperature, it is
necessary in the design ·of transistor
circuits to include a "stability factor" to keep the.. collector-current
variation within tolerable values under the expected high-temperature
operating conditions. The bias stability factor SF is expressed as the
ratio between a change in dc collector
RCA .Transistor Manual
24
current and the-co.rrespo.nding change
in .dc co.llector-cuto.ff current.
Fo.r a given set o.f o.perating vo.ltages, the stability facto.r can be calculated fo.r a maximum -permissible
rise- in dc co.llecto.r current fro.m the
- ro.o.m.temperature value, as fo.llo.ws:
SF
lOmax _ 10.
= =------,:---
lOBO. --loBol
where lo! and leBO! are measured at
25 degrees centigrade, lOBO, is measured at the maximum expected ambient (o.r junctio.n) temperature, and
lemax is _ the maximum permissible
co.llecto.r :current fo.r the specified
co.llecto.r-to.-emitter vo.ltage at the
maximum expected ambient (o.r junctio.n) temperature (to. keep transisto.r dissipatio.n within ratings).
,The calculated values o.f SF can
then be used, to.gether with the appro.priate values o.f beta and rb' basec()nnectio.n resistance), to. determine
-suitable' resistance values fo.r the
,transisto.r circuit. Fig. 35 sho.ws
equations .fo.r 'SF in terms o.fresistance 'values fo.r three typical 'circuit
'co.nfiguratio.ns. The maximum value
which SF can assume.is the value o.f
beta. Altho.ugh ·this analysis was
o.riginally made fo.r germanium transisto.rs, in which the co.llecto.r satura-
tio.n current leo 'is 'relatively large,
the same type o.f analysis may be applied to. interchangeability with beta
fo.r silico.n transisto.rs.
Three basic methods are used to.
co.uple transisto.r stages: transfo.rmer, resistance-capacitance, and
direct co.upling.
_The majo.r advantage o.f transformer coupling is that it permits
po.wer to. be transferred fro.m o.ne
impedance level to. ano.ther. A
transformer-coupled co.mmon-emitter
n-p-n stage is shown in Fig. 36. The
"vo.ltage step-down transfo.rmer T.
co.uples the signal fro.m the co.llecto.r
o.f the preceding stage to. the base o.f
the co.mmon-emitter stage. The vo.ltage loss inherent in this transfo.rmer
is no.t significant in transisto.r circuits because, as mentio.ned previo.usly, the transisto.r is a currentoperated device. Altho.ugh the vo.ltage
is stepped do.wn, the. available current is stepped up. The change in
base . current resulting fro.m the
presence o.f the signal causes an ac
co.llecto.r current to. flo.w in the primary winding o.ftransfo.rmer T 2, and
a po.wer gain is obtained between T,
and T •.
This use o.f a :vo.ltage step-down
+
+
SF)1(RI+R2')
R2'+,8RI
SF: ,8(RI+Req)
Req +,8 RI
R2'=:R2+ rb'
,
R4 R5
Req=R2 + R4+ R5
R2'=R2+ rb'
Figure 35.
+
SF: ,8 (P+Q)
Q+/JP
Q=R2'(R3+R4 +R5)+R4 R5
P=RI {R3+R4+RS}+R3RS
R2'=R2+ rb'
Bias-stability-factor equations for three typical circuit configurations.
25
Transistor Applications
'£]'rl____--=B~
Figure 36.
Transformer-coupled common-emitter stage.
transformer is similar to that in the
output stage of. an audio amplifier,
where a step-down transformer is
normally used to drive the loudspeaker, which is also a currentoperated device.
The voltage-divider network consisting of resistors R, and R. in Fig.
36 provides bias for the transistor.
The voltage divider is bypassed by
capacitor C, to avoid signal attenuation. The stabilizing emitter resistor
RID permits normal variations of the
transistor and circuit elements to be
compensated for automatically without adverse effects. This resistor RID
is bypassed by capacitor C,. The
voltage ..supply VBB is also bypassed,
by capacitor Ca, to prevent feedback
in the event that ac signal voltages
are developed across the power supply. Capacitor C, and C2 may normally 'he replaced by a single
capacitor c{)nnected.between the emitter and the· bottom of the. secondary
winding of transformer T, with little
change in performance.
The use oLresistance-capacitance
coupling usually permits some economy of circuit costs and reduction
of size, with some accompanying
sacrifice of gain. This method of
coupling is particularly desirable· in
low-level, low-noise audio amplifier
stages to minimize hum pickup from
stray magnetic fields. Use of·. 'resistance-capacitance (RC) coupling in
battery-operated equipment is usually limited to low-power operation.
The frequency response of an RC-
coupled stage is normally better than
. that of a transformer-coupled stage.
Fig. 37a shows a two"stage RCcoupled circuit using n-p-n transistors .in the common.emitter configuration. The method of bias is similar
to that used in the transformercoupled circuit of Fig. 36. The major
additional components are the collector load resistances R L , and RL2
and the coupling capacitor C e• The
value of C e must be made fairly
large, in the order of 2 to 10 microfarads, because of the small input
and load resistances involved. (It
should be noted that electrolytic capacitors are normally used for coupling in transistor audio circuits.
Polarity must be observed, therefore,
to obtain proper circuit operation.
Occasionally, excessive leakage current through an electrolytic coupling
capacitor may adversely affect transistor operating currents.)
Impedance coupling is a modified
form of resistance-capacitance coupling in which inductances are used
to replace the load resistors. This
type of coupling is rarely used except in special applications where
supply voltages are low and cost is
not a significant factor.
Direct coupling is used primarily
when cost is an important factor.
(It should be noted . that directcoupled amplifiers are not inherently
dc amplifiers, i.e., that they cannot
always amplify dc signals. Low.frequency response is usually limited
by other factors than the coupling
RCA Transistor Manual
26
Figure 37.
(a) Two-stage resistance-capacitance-coupled circuit and (b) two-stage directcoupled circuit.
network.} In the direct-coupled amplifier shown in Fig.37b, resistor R.
serves as both the collector load resistor for the first stage and the
bias resistor for the second stage.
Resistors R, and R. provide circuit
stability similar to that of Fig~ 31
because the emitter voltage of transistor Q. and the collector voltage of
transistor Q,. are within a few tenths
of a volt of each other.
Because so few circuit parts are
required in the direct-coupled amplifier, maximum economy can be
achieved. However, the number of
stages which can be directly coupled
is limited. Temperature variation of
the bias current in one stage may be
amplified by all the stages, and
severe temperature instability may
result.
DETECT.JON '
The circuit of a· radio, television, or
communications receiver in which the
modulation is separated from the carrier is· called the demodulator or
detector stage ..... Transmitted rf. signals may be. modulated in either of
two ways. If the frequency of the
carrier remains constant· and its amplitude is varied, the carrier is called
an amplitude-modulated (AM) signal. If the amplitude remains.essentially constant and, the frequency is
varied, the carrier is 'Called a .frequency-modulated (FM)' signa1.
The effect of amplitude modulation .(AM) on the waveform of an rf
signal is shown in Fig. 38. The audio-
II
UNMODULATED
RF CARRIER
tv
AF MODULATING
AMPLITUDE-MODULATED
RF WAVE
WAVE
Figure 38. Waveforms showing effect of
amplitude modulation on an rf wave.
Transistor Applications
frequency (af) modulation can be
extracted from the amplitude-modulated carrier by means of a simple
diode detector circuit such as that
shown in Fig. 39. This circuit eliminates alternate half-cycles of the
Figure 39.
Basic diode detector circuit.
waveform, and detects the peaks of
the remaining half-cycles to produce
the output voltage shown in Fig. 40.
In this figure, the rf voltage applied
to the circuit is shown in light line;
the output voltage across the capacitor C is shown in heavy line.
d
AMPLITUDE-MODULATED
RF WAVE
Figure 40. Waveform showing modulated
rf input (light line) and output voltage
(heavy line) of diode-detector circuit
of Figure 39.
Between points (a) and (b) of
Fig. 40, capacitor C charges up to the
peak value of the rf voltage. Then,
as the applied rf voltage falls away
from its peak value, the capacitor
holds the cathode of the diode at a
potential more positive than the voltage applied to the anode. The capacitor thus temporarily cuts off current
through the diode. While the diode
current is cut off, the capacitor discharges from (b) to (c) through the
diode load resistor R.
When the rf voltage on the anode
rises high enough to exceed the potential at which the capacitor holds
the cathode, current flows again and
27
the capacitor charges up to the peak
value of the second positive halfcycle at (d). In this way, the voltage
across the capacitor follows the peak
value of the applied rf voltage and
reproduces the af modulating signal.
The jaggedness of the curve in Fig.
40, which represents an rf component
in the voltage across the capacitor,
is exaggerated in the drawing. In an
actual circuit, the rf component of
the voltage across the capacitor is
small. When the voltage across the
capacitor is amplified, the output of
the amplifier reproduces the speech
or music that originated at the transmitting station.
Another way to describe the action
of a diode detector is to consider the
circuit as a half-wave rectifier. When
the signal on the anode swings positive, the diode conducts and the rectified current flows. The dc voltage
across the capacitor C varies in accordance with the rectified amplitude of the carrier and thus reproduces the af signal. Capacitor C
should be large enough to smooth
out rf or if variations, but should
not be so large as to affect the audio
variations. (Although two diodes
can be connected in a circuit similar
to a full-wave rectifier to produce
full-wave detection, in practice the
advantages of this connection generally do not justify the extra circuit cost and complication.)
In the circuit shown in Fig. 39, it
is often desirable to forward-bias the
diode almost to the point of conduction to improve performance for weak
signal levels. It is also desirable that
the resistance of the ac load which
follows the detector be considerably
larger than the diode load resistor
to avoid severe distortion of the audio
waveform at high modulation levels.
The effect of frequency modulation
(FM) on the waveform of an rf signal is shown in Fig. 41. In this type
of transmission, the frequency of the
rf carrier deviates from the mean
value at a rate proportional to the
audio-frequency modulation and by
an amount (determined in the transmitter) proportional to the ampli-
28
RCA Transistor Manual
UNMODULATED RF
CARRIER
AF MODULATING WAVE
FREQUENCY- MODULATED RF
WAVE
Figure 41. Waveforms showing effect of
frequency modulation on an rf wave.
tude of the af modulating signal.
That is, the number of times the
carrier frequency deviates above and
below the center frequency is a
measure of the frequency of the
modulating signal; the amount of
frequency deviation from the center
frequency is a measure of the loudness of the modulating signal. For
this type of modulation, a detector
is required to discriminate between
deviations above and below the center
frequency and to translate these deviations into a voltage having an
amplitude that varies at audio frequencies.
The FM detector shown in Fig. 42
is called a balanced phase-shift discriminator. In this detector, the mur-~
tually coupled tuned circuits in the
primary and secondary windings of
the transformer T are tuned to the
center frequency. A characteristic of
a double-tuned transformer is that
the voltages in the primary and secondary windings are 90 degrees out
of phase at resonance, and that the
phase shift changes as the frequency
changes from resonance. Therefore,
the signal applied to the diodes and
the RC combinations for peak detection also changes with frequency.
Because the secondary winding of
the transformer T is center-tapped,
the applied primary voltage Ep is
added to one-half the secondary voltage E, through the capacitor C,. The
addition of these voltages at resonance can be represented by the diagram in Fig. 43; the resultant voltage E, is the signal applied to one
peak-detector network consisting of
'm~
90'
I
Ep
Figure 43. Diagram illustrating phase shift
in double-tuned transformer at resonance.
one diode and its RC load. When
the signal frequency decreases
(from resonance), the phase shift of
E./2 becomes greater than 90 degrees, as shown at (a) in Fig. 44,
and E, becomes smaller. When the
signal frequency increases (above
resonance), the phase shift of E./2
is less than 90 degrees, as shown at
(b), and E, becomes larger. The curve
__~~~~~~___,AUD~
OUTPUT
8+
Figure 42.
Balanced phase-shift discriminator circuit.
Transistor Applications
29
J:;?\
>90"
\
£p
Ep
(a)
(b)
Figure 44. Diagrams illustrating phase
shift in double-tuned transformer (a) below
resonance and (b) above resonance.
of E, as a function of frequency in
Fig. 45 is readily identified as the response curve of an FM detector.
Figure 45. Diagram showing resultant
voltage E1 in Figure 43 as a function of
frequency.
Because the discriminator circuit
shown in Fig. 42 uses a push-pull
configuration, the diodes conduct on
alternate half-cycles of the signal
frequency and produce a plus-andminus output with respect to zero
rather than with respect to E 1 • The
primary advantage of this arrangement is that there is no output at
resonance. When an FM signal is
applied to the input, the audio out-
put voltage varies above and below
zero as the instantaneous frequency
varies above and below resonance.
The frequency of this audio voltage is
determined by the modulation frequency of the FM signal, and the amplitude of the voltage is proportional
to the frequency excursion from resonance. (The resistor R. in the circuit
provides a dc return for the diodes,
and also maintains a load impedance
across the primary winding of the
transformer. )
One disadvantage of the balanced
phase-shift discriminator shown in
Fig. 42 is that it detects audio modulation (AM) as well as frequency
modulation (FM) in the if signal because the circuit is balanced only at
the center frequency. At frequencies
off resonance, any variation in amplitude of the if signal is reproduced
to some extent in the audio output.
The ratio-detector circuit shown in
Fig. 46 is a discriminator circuit
which has the advantage of being
relatively insensitive to amplitude
variations in the FM signal. In this
circuit, Ep is added to E,/2 through
the mutual coupling M2 (this voltage addition may be made by either
mutual or capacitive coupling). Because of the phase-shift relationship
of these voltages, the resultant detected signals vary with frequency
variations in the same manner as described for the phase-shift discriminator circuit shown in Fig. 42.
However, the diodes in the ratio detector are placed "back-to-back" (in
series, rather than in push-pull) so
'--_ _~--... AUDIO (£2-£1)
OUTPUT
2
Figure 46.
Ratio-detector circuit.
RCA Transistor Manual
30
that both halves of the circuit operate simultaneously during one-half
of the signal frequency cycle (and
are cut off on the other half-cycle).
As a result, the detected voltages El
and E. are in series, as shown for
the instantaneous polarities that occur during the conduction half-cycle.
When the audio output is taken between the equal capacitors C1 and
C" therefore, the output voltage is
equal to (E.-E1) /2 (for equal resistors Rl and R.).
The dc circuit of the ratio detector
consists of a path through the secondary winding of the transformer,
both diodes (which are in series), and
resistors R1 and R•• The value of the
electrolytic capacitor C. is selected
so that the time constant of Rl, R.,
and C. is very long compared to the
detected audio signal. As a result,
the sum of the detected voltages
(E 1 + E2) is a constant and the AM
components on the signal frequency
are suppressed. This feature of the
ratio detecter provides improved AM
rejection as compared to the phaseshift discriminator circuit shown in
Fig. 42.
AMPLIFICATION
The amplifying action of a transistor can be used in various ways
in electronic circuits, depending on
the results desired. The four recognized classes of amplifier service can
be defined for transistor circuits as
follows:
A class A amplifier is an amplifier
in which the base bias and alternating signal are such that collector
current in a transistor flows continuously during the complete electrical cycle of the signal, and even
when no signal is present.
A class AB amplifier is an amplifier in which the base bias and alternating signal are such that collector
current in a transistor flows for appreciably more than half but less
than the entire electrical cycle.
A class B amplifier is an amplifier
in which the base is biased to approximately collector-current cutoff,
so that collector current is approximately zero when no signal IS applied, and so that collector current
in a transistor flows for approximately one-half of each cycle when
an alternating signal is applied.
A class C :1mplifier is an amplifier
in which the base is biased to such
a degree that the collector current
in a transistor is zero when no
signal is applied, and so that collector current in a transistor flows
for appreciably less than one-half of
each cycle when an alternating signal is applied.
For radio-frequency (rf) amplifiers which operate into selective
tuned circuits, or for other amplifiers in which distortion is not a
prime factor, any of the above classes
of amplification may be used with
either a single transistor or a pushpull stage. For audio-frequency (af)
amplifiers in which distortion is an
important factor, single transistors
can be used only in class A amplifiers. For class AB or class B audioamplifier service, a balanced amplifier
stage using two transistors is required. A push-pull stage can also
be used in class A audio amplifiers
to obtain reduced distortion and
greater power output. Class C amplifiers cannot be used for audio or AM
applications.
Audio Amplifiers
Audio amplifier circuits are used
in radio and television receivers,
public address systems, sound recorders and reproducers, and similar
applications to amplify signals in the
frequency range from 20 to 20,000
cycles per second. Each transistor in
an audio amplifier can be considered
as either a current amplifier or a
power amplifier.
Simple class A amplifier circuits
are normally used in low-level audio
stages such as preamplifiers and
drivers. Preamplifiers usually follow
Transistor Applications
31
low-level output transducers such as
microphones, hearing-aid and phonograph pickup devices, and recorderreproducer heads.
One of the important characteristics of a low-level amplifier circuit
is its signal-to-noise ratio, or noise
figure. The input circuit of an amplifier inherently contains some
thermal noise contributed by the resistive elements in the input device.
All resistors generate a predictable
quantity of noise power as a result
of thermal activity. This power is
about 160 dB below one watt for a
bandwidth of 10 kilocycles per
second.
When an input signal is amplified,
therefore, the thermal noise generated in the input circuit is also
amplified. If the ratio of signal
power to noise power (SIN) is the
same in the output circuit as in the
input circuit, the amplifier is considered to be "noiseless" and is said
to have a noise figure of unity, or
zero dB.
In practical circuits, however, the
ratio of signal power to noise power
is inevitably impaired during amplification as a result of the generation
of additional noise in the circuit elements. A measure of the degree of
impairment is called the noise figure
(NF) of the amplifier, and is expressed as the ratio of signal power
to noise power at the input (StiNt)
divided by the ratio of signal power
to noise power at the output (So/No),
as follows:
general, the lowest value of NF is
obtained by use of an emitter current of less than one milliampere and
a collector voltage of less than two
volts for a signal-source resistance
between 300 and 3000 ohms. If the
input impedance of the transistor is
matched to the impedance of the signal source, the lowest value of NF
that can be attained is 3 dB. Generally, the best noise figure is obtained
by use of a transistor input impedance approximately 1.5 times the
source impedance. However, this condition is often not realizable in practice because many transducers are
reactive rather than resistive. In addition, other requirements such as
circuit gain, signal-handling capability, and reliability may not permit
optimization for noise.
In the simple low-level amplifier
stage shown in Fig. 47, resistor R,
determines the base bias for the transistor. The output signal is devel-oped across the load resistor R•. The
NF = S;fNi
So/No
collector voltage and the emitter current are kept relatively low to reduce
the noise figure. If the load impedance across the capacitor C. is low
compared to R 2 , verY little voltage
swing results on the collector. Therefore, ac feedback through R, does not
cause much reducton of gain.
In many cases, low-level amplifier
stages used as preamplifiers include
some type of frequency-compensation network to enhance either the
low-frequency or the high-frequency
components of the input signal. The
The noise figure in dB is equal to
ten times the logarithm of this
power ratio. For example, an amplifier with a one-dB noise figure decreases the signal-to-noise ratio by
a factor of 1.26, a 3-dB noise figure
by a factor of 2, a 10-dB noise figure
by a factor of 10, and a 20-dB noise
figure by a factor of 100.
In audio amplifiers, it is desirable
that the noise figure be kept low. In
Figure 47.
Simple lOW-level class A
amplifier.
32
RCA Transjstor Manual
frequency range and dynamic range*
which can be recorded on a phonograph record or on magnetic tape
depend on. se:veral factors" including
the composition, mechanical charac-,
teristics, and speed of the' record or
tape, and the electrical and mechanical characteristics, of, the recording
equipment. To achieve wide frequency and dynamic range, manufacturers of commercial recordings
use equipment which introduces a
nonuniform relationship between amplitude and frequency. This relationship is known as a "recording
characteristic". To assure proper
reproduction. of a high-fidelity recording, therefore, some part of the
reproducing system must have a frequency-response characteristic which
is the inverse of the recording characteristic. Most manufacturers of
high-fidelity recordings use the RCA
"New Orthophonic" (RIAA) characteristic for discs and the NARTB
characteristic for magnetic tape.
The simplest type of equalization
network is shown in Fig. 48. Because
the capacitor C is effectively an open
circuit at low frequencies, the low
frequencies must be passed through.
the resistor R and are attenuated.
Figure 48.
the types of recordings which are to
be reproduced and on the pickup devices. used. All commercial pickup
devices provide very low power levels
to a transistor preamplifier stage
(transistors amplify current,not
voltage).
A ceramic high-fidelity phonograph pickup is usually designed to
provide proper compensation for the
RIAA recording characteristic when
the pickup is operated into the load
resistance specified by its manufacturer. Usually, a "matching" resistor is inserted in series with the input
of the preamplifier transistor. However, this arrangement produces a
fairly small signal current which
must then be amplified. If the matching resistor is not used, equalization
is required, but some improvement
can be obtained in dynamic range and
gain.
A magnetic high-fidelity phonograph pickup, on the other hand,
usually has an essentially flat frequency-response characteristic. Because a pickup of this type merely
reproduces the recording characteristic, it must be' followed by an
equalizer network, as well as. by a
preamplifier having sufficient gain to
Simple RC frequency·compensation network.
The capacitor has a lower reactance
at high frequencies, however, and bypasses. high-frequency components
around R so that they receive negligible attenuation. Thus the network
effectively "boosts" the high frequencies. This type of equalization is
called "attenuative".
Some typical preamplifier stages
are shown in the Circuits section.
The location of the frequency-compensation network or "equalizer" in
the reproducing: system depends on
satisfy the input requirements of the
tone-control amplifier and/or power
amplifier. Many designs include both
the equalizing and amplifying circuits in a single unit.
A high-fidelity magnetic-tape pick"
up head, like a magnetic phonograph
pickup, reproduces the recording
characteristic. This type of pickup
device, therefore, must also be followed by an equalizing network and.
preamplifier to provide equalization
for the NARTB characteristic.
• The dynamic range of an amplifier is a measure of its signal-handling capability. The
dynamic range expresses in dB the ratio of the maximum usable output signal (generally
for a distortion of about 10 per cent) to the minimum usable output signal (generally for
a signal-to-noise ratio of about 20 dB). A dynamic range of 40 dB is usually acceptable;
a value of 70 dB is exceptional f<>r any audio system.
Transistor Applications
Feedback networks may also be
used for frequency compensation and
for reduction of distortion. Basically,
a feedback network returns a portion of the output signal to the input
circuit of an amplifier. The .feedback
signal may be returned in phase with
the input signal (positive or regenerative feedback) or 180 degrees
out of phase with the input signal
(negative, inverse, or degenerative
feedback). In either case, the feedback can be made proportional to
either the output voltage or the output current, and can be applied to
either the input voltage or the input
current. A negative feedback signal
proportional to the output current
raises the output impedance of the
amplifier; negative feedback proportional to the output voltage reduces
the output impedance. A negative
feedback signal applied to the input
current decreases the input impedance; negative feedback applied to
the input voltage increases the input
impedance. Opposite effects are produced by positive feedback.
A simple negative or inverse feedback network which provides highfrequency boost is shown in "Fig. 49.
Figure 49.
33
input device such as a ceramic pickup
is used. In such cases, the use of negative feedback to raise the input impedance of the amplifier circuit (to
avoid mismatch loss) is no solution
because feedback cannot improve the
signal-to-noise ratio of the amplifier.
A more practical method is to increase the input impedance somewhat by operating the transistor at
the lowest practical current level and
by using a transistor which has a
high forward current-transfer ratio.
Some preamplifier or low-level
audio amplifier circuits include variable resistors or potentiometers which
function as volume or tone controls.
Such circuits should be designed to
minimize the flow of dc currents
through these controls so that little
or 110 noise will be developed by the
movable contact during the life of
the circuit. Volume controls and their
associated circuits should permit
variation of gain from zero to maximum, and should attenuate all
frequencies equally for all positions
of the variable arm of the control.
Several examples of volume controls
and tone controls are shown in the
Circuits section.
Negative-feedback frequency-compensation network.
This network provides equalization
comparable to that obtained with Fig.
48, but is more suitable for low-level
amplifier stages because it does not
require the first amplifier stage to
provide high-level low frequencies.
In addition, the inverse feedback improves the distortion characteristics
of the amplifier.
As mentioned previously, it is
undesirable to use a high-resistance
signal source for a transistor audio
amplifier because the extreme impedance mismatch results in high
noise figure. High source resistance
cannot be avoided, however, if an
A tone control is a variable filter
(or one in which at least one element
is adjustable) by means of which the
user may vary the frequency responseof an amplifier to suit his own
taste. In radio receivers and home
amplifiers, the tone control usually
consists of a resistance-capacitance
network in which the resistance is the
variable element.
The simplest form of tone control
is a fixed tone-compensating or
"equalizing" network such as that
shown in Fig. 50. At high frequencies,
the capacitor C. serves as a bypass
for the resistor R I , and the combined
34
RCA Transistor Manual
impedance of the resistor-capacitor
network is reduced. Thus, the output
of the network is greater at high frequencies than at low frequencies, and
the frequency response is reasonably
flat over a wide frequency range. The
response curve can be "flattened"
still more by use of a lower value for
resistor R, .
position, Ra is inserted in series with
R, so that there is more attenuation
to very low frequencies.
A
BASS BOOST
B
A
BASS CUT
B
Figure 52. Simplified representations of
bass-control circuit at extreme ends of
potentiometer.
Figure 50; Simple tone-control network for
fixed tone compensation or equalization.
Fig. 53 shows extreme positions of
the treble control. R. is generally
much larger than R. or R.' and may
be treated as an open circuit in the
extreme positions. In both the. boost
and cut positions, very low frequencies are controlled by the voltage divider R. and R •. In the boost position,
The tone-control network shown in
Fig. 51 has two stages with comTREBLE BOOST
pletely separate bass and treble conTREBLE CUT
R4
R4
trols. Fig. 52 shows simplified
representations of the bass control c
o
when the potentiometer is turned to ()-t-il--"-t'---1P-¢
its extreme variations (labeled
BOOST and CUT). At very high frequencies, C, and C. are effectively
short circuits and the network becomes the simple voltage divider R, Figure 53.' Simplified representations of
and· R.. In the bass-boost position, treble-control circuit at extreme ends of
potentiometer.
R. is inserted in series with R. so
that there is less attenuation to very
low frequencies than to very high R. is bypassed by the high frequenfrequencies. Therefore, the bass is cies and the voltage-divider point D
said to be "boosted". In the bass-cut is placed closer to C. In the cut posiTREBLE
BASS
.---_._---l!f-..A
o
B+
Figure 51.
B+
Two-stage tone-control circuit incorporating separate bass
and treble controls.
35
Transistor Applications
tion, R. is bypassed and there is
greater attenuation of the high frequencies.
The frequencies at which boost and
cut occur in the circuit of Fig. 51 are
controlled by the values of Cl, C" C"
and C•. Both the output impedance of
the driving stage (generally RL1) and
the loading of the driven stage affect the response curves and must be
considered. This tone-control circuit,
audio driver must provide two output
signals, each 180 degrees out of
phase with the other. This phase requirement can be met by use of a
tapped-secondary transformer between a single-ended driver stage
and the output stage, as shown in
Fig. 54. The transformer Tl provides
the required out-of-phase input signals for the two transistors Ql and
Q, in the push-pull output stage.
t - - - - ' .....-r-o· TO Q2
Figure 54.
Driver stage for push-pull output circuit.
like the one in Fig. 50, is attenuative.
Feedback tone controls may also be
employed.
The location of a tone-control network is of considerable importance.
In a typical preamplifier, it may be
in the collector circuit of the final
low-level stage or in the input circuit
of the first stage. If the amplifier incorporates negative feedback, the
tone control must be inserted in a
part of the amplifier which is external
to the feedback loop, or must be made
. a part of the feedback network. The
over-all gain of a well designed tonecontrol network should be approximately unity. The system dynamic
range should be adequate for all frequencies anticipated with the tone
controls in any position. The highfrequency gain should not be materially affected as the bass control
is varied, nor should the low-frequency gain be sensitive to the
treble control.
Driver stages in audio amplifiers
are located immediately before the
power-output stage. When a singleended class A output stage is used,
the driver stage is similar to a preamplifier stage. When a push-pull
output stage is used, however, the
Transistor audio power amplifiers
may be class A single-ended stages,
or class A, class AB, or class B
push-pull stages. A simple class A
single-ended power amplifier is
shown in Fig. 55. Component values
which will provide the desired power
output can be calculated from the
Figure 55.
Class A power-amplifier circuit.
transistor characteristics and the
supply voltage. For example, an output of four watts may be desired
from a circuit operating with a supply voltage of 14.5 volts (this voltage is normally available in automobiles which have a 12-volt ignition
system). If losses are assumed to be
negligible, the power output (PO)
is equal to the peak collector volt-
36
RCA Transistor Manual
age (ee) times the peak collector
current (ie), each divided by the
square root of two to obtain rms
values. The peak collector current
can then be determined as follows:
po=
ie
e~ X
v2
= PO(v2l
i.:
v2
X
v2
ec
=4V2XV2
=
14.5
0.55, or approximately
0.6 ampere.
In class A service, the dc collector
current and the peak collector swing
are about the same. Thus, the collector voltage and current are 14.5
volts and 0.6 ampere, respectively.
The voltage drop across the resistor RE in Fig. 55 usually ranges
from 0.3 to 1 volt; a typical value of
0.6 volt can be assumed. The value
of RE must equal the 0.6-volt drop
divided by the 0.6-ampere emitter
current, or one ohm. (The emitter
current is assumed to be nearly equal
to the 0.6-ampere collector current.)
The current through resistor It.
should be about 10 to 20 per cent of
the collector current; a typical value
is 15 per cent of 0.6, or 90 milliamperes.
The voltage from base to ground
is equal to the base-to-emitter voltage (determined from the transistor
transfer-characteristics curves for
the desired collector or emitter current; normally about 0.4 volt for a
germanium power transistor operating at an emitter current of 600 milliamperes) plus the emitter-to-ground
voltage (0.6 volt as described above),
or one volt. The voltage across R.,
therefore, is 14.5 minus 1, or 13.5
volts. The value of R. must equal
13.5 divided by 90, or about 150 ohms.
Because the voltage drop across
the secondary winding of the driver
transformer Tl is negligible, the voltage drop across Rl is one volt. The
current through R.. equals the cur-
rent through It. (90 milliamperes)
minus the base current. If the dc
forward current-transfer ratio (beta)
of the transistor selected has a typical value of 60, the base current
equals the collector current of 600
milliamperes divided by 60, or 10
milliamperes. The current through
R, is then 90 minus 10, or 80 milliamperes, and the value of R. is 1
divided by 80, or about 12 ohms.
The transformer requirements are
determined from the ac voltages and
currents in the circuit. The peak
collector voltage swing that can be
used before distortion occurs as a
result of clipping of the output voltage is about 13 volts. The peak collector current swing available before
current cutoff occurs is the dc current of 600 milliamperes. Therefore,
the collector load impedance should
be 13 volts divided by 600 milliamperes, or about 20 ohms, and the
output transformer T. should be designed to match a 20-ohm primary
impedance to the desired speaker impedance. If a 3.2-ohm speaker is
used, for example, the impedance
values for T, should be 20 ohms to
3.2 ohms.
The total input power to the circuit
of Fig. 55 is equal to the voltage
required across the secondary winding of the driver transformer T,
times the current. The driver signal
current is equal to the base current (10 milliamperes peak, or 7 milliamperes mis). The peak ac signal
voltage is nearly equal to the sum of
the base-to-emitter voltage across
the transistor (0.4 volt as determined
above), plus the voltage across RE
(0.6 volt), plus the peak ac signal
voltage across R. (10 milliamperes
times 12 ohms, or 0.12 volt). The input voltage, therefore, is about one
volt peak, or 0.7 volt rms. Thus, the
total ac input power required to produce an output of 4 watts is 0.7 volt
times 7 milliamperes, or 5 milliwatts,
and the input impedance is 0.7 volt
divided by 7 milliamperes, or 100
ohms.
Transistor Applications
37
Higher power output can be
achieved with less distortion in class
A service by the use of a push-pull
circuit arrangement. One of the disadvantages of a transistor class A
amplifier (single-ended or push-pull),
however, is that collector current
flows at all times. As a result, transistor dissipation is highest when no
ac signal is present. This dissipation
can be greatly reduced by use of
class B push-pull operation. When
two transistors are connected in
class B push-pull, one transistor
amplifies half of the signal, and the
other transistor amplifies the other
half. These half-signals are then
combined in the output circuit to restore the original waveform in an
amplified state.
Ideally, transistors used in class B
service should be biased to collector
cutoff so that no power is dissipated
under zero-signal conditions. At low
signal inputs, however, the resulting
signal would be distorted, as shown
in Fig. 56, because of the low forward current-transfer ratio of the
transistor at very low currents. This
type of distortion, called cross-over
distortion, can be suppressed by the
use of a bias voltage which permits
a small collector current flow at zero
signal level. Any residual distortion
can be further reduced by the use of
negative feedback.
R2
OUTPUT
COLLECTOR
CURRENT
Figure 56.
Waveforms showing cause of
cross·over distortion.
A typical class B push-pull audio
amplifier is shown in Fig. 57. Resistors REt and RE• are the emitter
stabilizing resistors. Resistors R,
and R. form a voltage-divider network which provides the bias for the
transistors. The base-emitter circuit
is biased near collector cutoff so that
very little collector power is dissipated under no-signal conditions.
The characteristics of the bias network must be very carefully chosen
so that the bias voltage will be just
sufficient to minimize cross-over distortion at low signal levels. Because
Vcc
'-----'IIV'v----+-+--1JI +
Figure 57.
Class B push-pull audio-amplifier circuit.
RCA Transistor Manual
38
the collector current, collector dissipation, and dc operating point of a
transistor vary with ambient temperature, a temperature-sensitive resistor (such as a thermistor) or a
bias-compensating diode may be
used in the biasing network to minimize the effect of temperature
variations.
The advantages of class B operation can be obtained without the need
for an output transformer by use
of a single-ended class B circuit such
as that shown in Fig. 58. In this circuit, the secondary windings of the
The secondary windings of any
class B driver transformer should be
bifilar-wound (i.e., wound together)
to obtain tighter coupling and
thereby minimize leakage inductance. Otherwise, "ringing" may occur in the cross-over region as a
result of the energy stored in the
leakage inductance.
Because junction transistors can
be made in both p-n-p and n-p-n
types, they can be used in complementary-symmetry circuits to obtain
all the advantages of conventional
push-pull amplifiers plus direct cou-
-- vee
+
=-VCC
+
Figure 58.
Single-ended class B circuit.
driver transformer T, are phased so
that a negative signal from base to
emitter of one transistor is accompanied by a positive signal from
base to emitter of the other transistor. When a negative signal is applied to the base of transistor Q"
for example, Q, draws current. This
current must flow through the
load because the accompanying positive signal on the base of transistor Q. cuts Q. off. When the signal polarity reverses, transistor Q,
is cut off, while Q. conducts current.
The resistive dividers R,R, and R.R,
provide a dc bias which keeps the
transistors slightly above cutoff under no-signal conditions and thus
minimizes cross-over distortion. The
emitter resistors REI and REI help to
compensate for differences between
transistors and for the effects of
ambient-temperature variations.
pling. The arrows in Fig. 59 indicate
the direction of electron current flow
in the terminal leads of p-n-p and
n-p-n transistors. When these two
Figure 59.
Electron-current flow in p-n-p
and n-p-n transistors.
transistors are connected in a single
stage, as shown in Fig. 60, the de
electron current path in the output
circuit is completed through the collector-emitter circuits of the transistors. In the circuits of Figs. 58
and 60, essentially no dc current
flows through the load resistor RL •
Transistor Applications
Therefore, the voice coil of a loudspeaker can be connected directly in
place of RL without excessive speaker
cone distortion.
INPUT
Figure 60.
Basic complementary·symmetry
circuit.
Several high-fidelity amplifiers are
shown in the Circuits section. The
performance capabilities of such amplifiers are usually given in terms
of frequency response, total harmonic
distortion, maximum power output,
and noise level. To provide highfidelity reproduction of audio program material, an amplifier should
have a frequency response which does
not vary more than 1 dB over the entire audio spectrum. General practice
is to design the amplifier so that its
frequency response is flat within 1
dB from a frequency well below the
lowest to be reproduced to one well
above the upper limit of the audible
region.
Harmonic distortion and intermodulation distortion pro due e
changes in program material which
may have adverse effects on the quality of the reproduced sound. Harmonic distortion causes a change in
the character of an individual tone
by the introduction of harmonics
which were not originally present in
the program material. For highfidelity reproduction, total harmonic
distortion (expressed as a percentage of the output power) should not
be greater than about 0.5 per cent at
the desired listening level.
Intermodulation distortion is a
change in the waveform of an individual tone as a result of interaction
with another tone present at the
39
same time in the program material.
This type of distortion not only alters
the character of the modulated tone,
but may also result in the generation
of spurious signals at frequencies
equal to the sum and difference of the
interacting frequencies. Intermodulation distortion should be less than
2 per cent at the desired listening
level. In general, any amplifier which
has low intermodulation distortion
will have very low harmonic distortion.
The maximum power output which
a high-fidelity amplifier should deliver depends upon a complex relation of several factors, including the
size and acoustical characteristics of
the listening area, the desired listening level, and the efficiency of the
loudspeaker
system. Practically,
however, it is possible to determine
amplifier requirements in terms of
room size and loudspeaker efficiency.
The acoustic power required to reproduce the loudest passages of orchestral music at concert-hall level
in the average-size living room is
about 0.4 watt. Because high-fidelity
loudspeakers of the type generally
available for home use have an efficiency of only about 5 per cent, the
output stage of the amplifier should·
therefore be able to deliver a power
output of at least 8 watts. Because
many wide-range loudspeaker systems, particularly those using crossover networks, have efficiencies· of
less than. 5 per cent, output stages
used with such systems must have
correspondingly larger power outputs.
The noise level of a high-fidelity
amplifier determines the range of
volume the amplifier is able to reproduce, i.e., the difference (usually expressed in dB) between the· loudest
and softest sounds in program material. Because the greatest volume
range utilized in electrical program
material at the present time is about
60 dB, the noise level of a highfidelity amplifier should be at least
60 dB below the signal level at the
desired listening level.
The design of audio equipment for
RCA Transistor Manual
direct operation from the ac power
line normally requires the use of
either a power transformer or a large
voltage-dropping resistor to reduce
the 120-volt ac line voltage to a .level
that is appropriate for transistors.
, Both of these techniques have disadvantages. The use of a transformer
adds cost to the system .. The use of
a dropping resistor places restrictions on the final packaging of the
instrument because the resistor must
dissipate power. In addition, low. voltage supplies are usually more ex. pensive to filter than high-voltage
supplies.
The use of high-voltage, silicon
transistors eliminates the need for
.either a power transformer or a highpower voltage-dropping resistor, and
permits the use of economical circuits and components in line-operated
'audio equipment. Several acldc circuits using· these high-voltage tran. sistors are shown in the Circuits
section. The basic class A audio output stage shown in Fig. 61 is essentially of the same design·as the class
A amplifier discussed previously. Because the. supply voltage is much
higher, however, 'the currents are
about one-tenth' as high and the impedances about 100 times as high.
The use of a voltage-dependent
resistor (VDR) as a damping resistor across the primary winding of the
output transformer in Fig. 61 protects the output circuit against the
destructive effects of transient voltages that can occur under abnormal
conditions.· If the VDR were not used,
the peak collector voltage under
transient conditions could be as high
as five to ten times the supply voltage, or far in excess of the breakdown-voltage rating for the transistor. Because the resistance of the
VDR varies directly with voltage, its
use limits the transient voltage to
safe levels but does not degrade overall circuit performance.
Fig. 62 shows another effective
method for protection against transient voltages. In this arrangement,
TO
DRIVER
=
Figure 62. ·Alternate method for protection
against transient voltages.
the output transformer is replaced by
a 'center-tapped transformer and a
silicon rectifier that has a peakreverse-voltage rating of 300 to 400
volts. The peak voltage across the
output is thus limited to a value
which does not exceed twice the magnitude' of the supply voltage. As the
collector voltage approaches a value
equal to twice the supply voltage, the
voltage at the diode. end of the transformer becomes sufficiently negative
to forward-bias the diode and thus
.120 V
AC/DC-1~--------~------~~----__;b+~__~
C2
Figure 61.' BaSic audio output stage for .line-operated equipment.
41
Transistor Applications
clamp the collector voltage. The required transformer primary impedance is generally about 10,000 ohms
center-tapped; in addition, it is
recommended that a bifilar winding
be used to minimize leakage inductance. Because the arrangement
shown in Fig. 62 provides more reliable protection against transients
than that of Fig. 61, a higher supply
voltage and a higher transformer impedance can be used.
It should be noted that special precautions are required in the construction of circuits for line-voltage
operation. Because these circuits
operate at high ac and dc voltages,
special care must be exercised to assure that no metallic part of the chassis or output transformer is exposed
to touch, accidental or otherwise.
The circuits should be installed in
non-metallic cabinets, or should be
properly insulated from metallic
cabinets. Insulated knobs should be
used for potentiometer shafts and
switches.
A phase inverter is a type of class
A amplifier used when two out-ofphase outputs are required. In the
split-load phase-inverter stage shown
in Fig. 63, the output current of
transistor Ql flows through both the
collector load resistor R. and the
emitter load resistor R,. When the
input signal is negative, the increased output current causes the
collector side of resistor R. to become more positive and the emitter
side of resistor R, to become more
negative with respect to ground.
When the input signal is positive,
the output. current decreases and opposite voltage polarities are established across resistors R3 and R •.
Thus, two output signals are produced which are 180 degrees out of
phase with each other. This circuit
provides the 180-degree phase relationship only when each load is resistive and constant throughout the
entire signal swing. It is not suitable
as a driver stage for a class B output stage.
. Direct-Current Amplifiers
Direct-current amplifiers are normally used in transistor circuits to
amplify small dc or very-low-frequency ac signals .. Typical applications of such amplifiers include the
output stages of series-type and
shunt-type regulating circuits.
chopper-type circuits, differential
amplifiers, and pulse amplifiers.
In series regulator circuits such as
that shown in Fig. 64, direct-coupled
amplifiers are used to amplify an
Vo
PHASE
r----
~ -6
1&1
IS
-8
'03
2
4
\
\
i\
\ \
1//
II
II
~
a:
~\'1\1\
2
68'04
4
68'05
2
4
68'06
2
4
\
68'07
4
2
68
,
8
FREQUENCY-cIs
Figure 75.
Amplitude response characteristics of various numbers (N) of identical
uncompensated amplifiers.
amplitude response characteristics
of various numbers of identical uncompensated amplifiers.
In general, the output of an amplifier may be represented by a current
generator i ou • and a load resistance
R L , as shown in Fig. 76a. Because
the signal current is shunted by various capacitances at high frequencies,
as shown in Fig. 76b, there is a loss
in gain at these frequencies. If an
inductor L is placed in series with
the load resistor RL, as shown in
4
2
Fig. 76c, a low-Q circuit is formed
which somewhat suppresses the capacitive loading. This method of gain
compensation, called shunt peaking,
can be very effective for improving
high-frequency response. Fig. 76
shows the frequency response for the
circuits shown in Fig. 76a, b, and c.
If the inductor L shown in Fig. 76c
is made self-resonant approximately
one octave above the 3-dB frequency
of the circuit of Fig. 76b, the amplifier response is extended by about
r-$I~I~~
V'~
/
I I I 1 "-~T RIGHT
(al
EB
r-
Nl
(blfIl~~
lOUT
RL
-4
-6
105
~g
--~>q,l
r"~<
eSTRAY
(cl
4
6
8
106
2
,
4
6
B
107
2
4
6
8
FREQUENCY-c/.
Figure 76.
Equivalent circuits and frequency response of uncompensated and
shunt-peaked amplifiers.
52
RCA Transistor Manual
another 30 per cent.
If the stray capacitance C shown
in Fig. 76b is broken into two parts
C' and 0" and an inductor L, is placed
between them, a heavily damped
form of series resonance may be employed for further improvement.
This form of compensation, called
series peaking, is shown in Fig. 77a.
(a)
(b)
Fi¥ure 77. Circuits using (a) series peakmg, and (b) both self-resonant shunt
peaking and series peaking.
If C' and C" are within a factor of
two of each other, series peaking
produces an appreciable improvement
in frequency response as compared
to shunt peaking. A more complex
form of compensation embodying
both self-resonant shunt peaking and
series peaking is shown in Fig. 77b.
The effects of various high-frequency compensation systems can be
demonstrated by consideration of an
amplifier consisting of three identical stages. If each of the three stages
is down 3 dB at one megacycle per
second, and if a total gain variation
of plus 1 dB and minus 3 dB is allowed, the bandwidth of the amplifier is 0.5 megacycle per second
without compensation. Shunt peaking raises the bandwidth to 1.3 megacycles per second. Self-resonant
shunt peaking raises it to 1.5 megacycles per second. An infinitely complicated network of shunt-peaking
techniques could raise it to 2 megacycles per second. If the distribution
of capacitance permits it, series
peaking alone can provide a bandwidth of about 2 megacycles per
second, while a combination of shunt
and series peaking can provide a
bandwidth of approximately 2.8
megacycles per second. If the ca-
pacitance is perfectly distributed,
and if an infinitely complex network
of shunt and series peaking is employed, the ultimate capability is
about 4 megacycles per second.
The frequency response of a wideband amplifier is influenced greatly
by variations in component values
due to temperature effects, variation
of transistor parameters with voltage and current (normallarge-signa1-·
excursions), changes of stray capacitance due to relocated lead wires, or
other variations. A change of 20 per
cent in any of the critical parameters
can cause a change of 0.7 dB in gain
per stage over the last half-octave
of the response for the most simple
case of shunt peaking. As the bandwidth is extended by more complex
peaking, a circuit becomes substantially more critical. (Measurement
probes generally alter circuit performance because of their capacitance;this effect should be considered
during frequency-response measurements.)
In the design of wideband amplifiers using many stages of amplification, it is necessary to consider timedelay variations as well as amplitUde
variation. When feedback capacitance is a major contributor to response limitation, the more complex
compensating networks may produce
severe ringing or even sustained oscillation. If feedback capacitance is
treated as input capacitance produced by the Miller effect, the added
input capacitance C! caused by the
feedback capacitor Cf is given by
Ct' = C. (1 - VG)
where VG is the input-to-output
voltage gain. The gain VG, however,
has a phase angle that varies with
frequency. The phase angle is 180
degrees at low frequencies, but may
lead or lag this value at high frequencies; the magnitude of VG then
also varies. In the design of very
wideband amplifiers (20 megacycles
per second or more), the phase of
the transconductance gm must be
considered.
Transistor Applications
53
ratio (beta) of the transistor if
the component values are properly
chosen. The high-frequency response
is limited primarily by the transistor gain-bandwidth product fT, the
transistor feedback capacitance, and
sometimes the stray capacitance. The
low-frequency response is limited
primarily by the value of the
coupling capacitor C,.
Fig. 78b illustrates the use of
high-frequency shunt peaking and
low-frequency peaking at the expense of stage gain in the three
stages of the wideband amplifier to
extend the high- and low-frequency
Fig. 78a shows three stages of a
multi-stage wideband amplifier. The
resistors R. merely provide a highimpedance bias path for the collectors of the transistors. The ac collector current of each transistor
normally flows almost exclusively
into the relatively low impedance
offered by the base of the next stage
through the coupling capacitor C,.
The resistive network R, and R. provides a stable dc bias for the transistor base.
The mid-frequency gain of each
stage is approximately equal to
the common-emitter current-transfer
(0)
CI
~r-~~~~i~4-~~~~~~~~+-4i
=
(b)
Figure 78.
(a) Uncompensated and (b) compensated versions of three stages of a
multistage wideband amplifier.
54
response. The emitter resistors R.
are made as small as possible, yet
large enough to mask the variation
of transconductance, and thus voltage gain, as a function of signalcurrent variation. For very small
ratios of peak ac collector current to
dc collector current, this variation is
not substantial. The resistors R. also
partially mask the effect of the intrinsic base-lead resistance r,,'.
The base-bias resistors R, of Fig.
78a are split into two resistors R.
and R. in Fig. 78b, with R. well bypassed. The mid-frequency gain is
then reduced to a value approximating R. divided by R •. At this point,
however, the high-frequency response
is increased by the same factor.
Shunt peaking is provided by k and
C. for additional high-frequency
improvement.
When the reactance of the bypass
capacitor C. is large compared to R.,
the low-frequency gain is increased
because the resistor no longer heavily
shunts the transistor input. Selection of the proper value for C. exactly offsets the loss of low-frequency
gain caused by c,. When the reactance of C. approaches R., however, the low-frequency peaking is
no longer effective.
High-Frequency Power Amplifiers
Within their frequency capabilities, power transistors can be used to
develop the power output required for
communications transmitters operating in the vhf and uhf ranges. In most
cases, power-amplifier circuits are
designed to provide desired values of
power output and power gain when
operated at a specified supply voltage and frequency. The dc supply
voltage is usually fixed at 12 volts for
ground mobile equipment and 28 volts
for aircraft transmitting equipment.
The operating frequency varies for
different types of transmitters; the
upper frequency is often limited by
the power-frequency capability of
commercially available transistors.
The desired rf power output, which
RCA Transistor Manual
is usually dictated by the transmitting system requirements, determines whether a single device or
a suitable parallel arrangement of
devices should be used.
The ability of a transistor to operate satisfactorily as a vhf or uhf
power amplifier depends on its ability
to handle large amounts of peak currents at high frequencies. One of the
most important considerations in rf
power-amplifier design is the powerdissipation capability of the transistor. The maximum power that can be
dissipated before "thermal runaway"
occurs depends on how well the heat
generated within the transistor is removed. When heat is removed by
conduction, the heat transfer is an
inverse function of the thermal resistance. The maximum de powerdissipation capability Pmox(dc) can
be expressed as follows:
TJ - TA
Pmax(dc) = - - 0 where T, and TA are the maximum
allowable junction temperature and
the ambient temperature, respectively, in degrees centigrade, and 0
is the total thermal resistance of the
transistor and the heat sink. For
most silicon power transistors, TJ is
200·C.
The maximum dc voltage which can
safely be applied to the collector
junction is limited by the voltage
breakdown ratings for the particular
transistor used. The VCER rating defines the maximum value that can be
applied under forward-biased conditions. If the transistor is required
to be forward-biased, as in the case
of a class A power stage, the maximum dc voltage should be no more
than one-half this rating. The VCEV
rating defines the maximum value
that can be applied under reversebiased conditions. For class C operation of the transistor, the supply
voltage must be limited to one-half
this value for safe operation. The
maximum dc or peak collector current
rating for a transistor is usuallyes-
Transistor Applications
tablished at some practical value of
current gain.
In a high-frequency power amplifier, it is usually desirable to obtain
as much power output as possible
with good efficiency and a minimum
amount of harmonic distortion. Both
common-emitter and common-base
circuits are used in rf power amplifiers. The choice of circuit configuration is influenced primarily by
operating frequency, power gain,
bandwidth, and rf stability requirements. At extremely high frequencies, the power-gain capability of the
common-emitter circuit is restricted
somewhat by the emitter-lead inductance. Provided some sacrifice in
power gain is acceptable, however,
this circuit is generally used because
it has better rf stability and can more
easily be designed with controlled
bandwidths. Because the power gain
of the common-base circuit is not
limited by the degenerative effects of
the emitter-lead inductance, the apparent power gain of this configuration is somewhat greater at very
high frequencies than that of the
common-emitter circuit. However,
the common-base circuit is only conditionally stable at high frequencies
and controlled bandwidths may be
more difficult to obtain.
Because rf transistor amplifiers
are designed to handle a selected frequency or band of frequencies, tuned
circuits are usually employed for the
input and output coupling networks.
The collector current in an rf poweramplifier stage contains an appreciable amount of harmonics as a
result of the large dynamic swing of
voltages and currents. The tuned
coupling networks are designed to
isolate the unwanted harmonic currents and permit only the fundamental component of current to flow in
the load circuit. A high ratio of unloaded Q (Qo) to loaded Q (QL) must
be maintained to obtain good tunedcircuit efficiency.
Transistor rf power amplifiers can
be operated in class A, B, or C service.
The choice of the mode of operation
depends upon several factors, includ-
55
ing the amount of power output,
power gain, and power efficiency desired. Class A power amplifiers are
normally used when extremely good
linearity is required. Class A amplifiers provide more power gain than
either class B or class C amplifiers,
but their maximum theoretical collector efficiency is limited to 50 per
cent. Because the zero-signal collector power dissipation is high in class
A operation, the bias network must
be selected to provide good thermal
stability.
The input coupling network of a
class A power amplifier must be designed to transform the input resistance to the appropriate value to
provide the proper load on the driving source. The reactive portion of
the input network must resonate with
the transistor input reactance. When
the input circuit is driven from a
signal generator that has a known
internal impedance, the input coupling network is usually designed to
provide maximum power transfer.
Maximum power transfer occurs
when the load resistance is matched
to the dynamic output resistance of
the transistor. However, matching
for maximum power transfer may be
impractical in a particular poweramplifier design because of.the collector-supply-voltage (Vee) and poweroutput
(Po)
requirements. The
collector load resistance RL is determined by these requirements as
follows:
RL
= Veo·/2P.
The reactive portion of the output
impedance is also important and must
be considered in the design of a class
A power amplifier. The output coupling network must be designed to.
resonate out this reactance and provide the required collector-circuit
loading.
When the circuit-design requirements for a power amplifier demand
several watts of rf power output, one
of the cutoff modes of operation is
used. The class B and class C modes
are characterized by good collector-
56
RCA Transistor Manual
circuit efficiency and relatively high circuit is stepped down to the collecpower output in proportion to the tor by proper selection of the turns
average dissipation in the transistor. ratio for. the coil L, . If the value of
DUring periods of zero input signal, L, is chosen properly and the portion
the power-supply drain and collec- of the coil inductance between the
tor. dissipation are low. The choice collector and ground is sufficiently
between class B and class C opera- high, the harmonic portion of the coltion is usually determined by the lector current is low in the tuned cirpower-gain or collector-efficiency re- cuit and its contribution to the dc
quirements. Class B amplifiers gen- component flowing in the collector
erally have higher power gain, while circuit is minimized. Tapping the
class C amplifiers have higher collec- collector down on the coil maintains
tor efficiency. The following discussion of design considerations for a
class C rf power amplifier is also applicable in most respects· to class B
circuits.
As in the case of a class A power
amplifier, the collector load resistor
for a class C circuit is determined by
the supply-voltage and power-output
'requirements. The output tuned circuit must be designed to obtain the Figure 79. Output·coupling network using
parallel tuned circuit.
proper load matching and also maintain good tuned-circuit efficiency.
the loaded QL of the circuit and miniBecause class C amplifiers are re- mizes the variation of bandwidth of
verse-biased beyond collector-current the output circuit with changes in
cutoff, the harmonic currents· gener- the output capacitance of the tranated in the collector are comparable sistor.
in amplitude with the fundamental
The circuit shown in Fig. 79 has
component. The tuned coupling net- one serious limitation at very high
works must provide a relatively high frequencies. Because of the. poor co. impedance to these harmonic currents efficient of coupling in coils at such
and a low impedance to the funda- frequencies, the tap position is usu. mental current. If the impedance of ally establshed empirically to obtain
. the' tuned circuit is sufficiently high the proper collector loading. Fig. 80
at ·the harmonic frequencies,. how- shows suitable output-coupling netever, the amplitude of the harmonic works which. provide the required
currents is reduced and their contri- collector loading and also suppress
·bution to the average current flowing the circulation of collector harmonic
in thecoHector is minimized. As a currents. These .networks, which inresult, the collector power dissipa- clude the collector output capacitance,
tion is reduced and the collector-cir- are not dependent upon coupling cocuit output efficiency is increased.
efficient for load-impedance transFig. 79 shows an output-coupling formation.
network in which a .parllllel tuned
The input network for a class C
circuit is used for coupling the load rf power amplifier must provide couto the· collector circuit. The -collector . piing of the base-emitter circuit to
electrode of the, transistor is tapped . the driving source. Because .the' drivdown on the coil L,. in ,this network. ing stage is usually another power
'The capacitor C, provides tuning for transistor,- the load required by the
the fundamental frequency, and ca- collector of the driver stage is genpacitor C. provides load matching of 'erally higher than the base-to-emitter
Rx; to the .tuned circuit. The· trans- impedance of the amplifier transisformed RL across. the entire tuned tor. Therefore, the base-to-emitter
57
Transistor Applications
+Vee
RFe
r-----~~------{)+Vec
=
Figure 80. Output-coupling networks including collector output capacitance Co.
impedance of the output stage must
be transformed up to the appropriate
value of load for the collector circuit
of the driver stage. The input circuit
of the transistor can be represented
as a resistor rb' in series with a capacitor C .. The input network must
tune out the capacitance C. and provide a purely resistive load to the
collector of the driver stage.
Fig. 81 shows. several input-coupling networks which can be used to
couple the base to the output of the
driver stage and to tune out the input capacitance C •. In Fig. 81a, the
input circuit is formed by the T network consisting of C" C" and L._ If
the value of the inductance L. is
chosen so that its reactance is much
greater than that· of.. C" series tuning of the base-to-emitter circuit is
obtained by L. and the parallel combination of
and (Cl + Co). Capacitors C, and Co provide the impedance
matching . to the collector of. the
driver stage.
Fig. 81b shows a T netw.ork with
the . location of Ll and·
interchanged; If the value of the capacitor C. is chosen so that its reactance
is much g·reater than that .of CI, then
C. can be used to step up rb' to an
appropriate value across L. ... The re-
sultant parallel resistance across L,
is transformed to the required collector load value by capacitors C, and
Co. Parallel resonance of the circuit
is obtained by means of L, and the
parallel combination of (C, + Co)
and C•.
The circuits shown in Figs. 81a
and 81b require the collector of the
driving transistor to be shunt fed by
a high-impedance rf choke. Fig. 81c
shows a coupling network which
eliminates the need for a choke. In
this circuit, the collector of the driving transistor is parallel tuned and
the base-to-emitter junction of the
output transistor is series tuned.
As mentioned previously, the baseto-emitter junction of a transistor is
reverse-biased for class C operation.
Vee
(o)
(b)
c..
c..
Vee
(e)
Figure IU.lnput-coupling networks
. high-f.-equency power amplifiers.
for
RCA Transistor Manual
58
(a)
(b)
(e)
Figure 82.
Biasing networks for high-frequency power amplifiers.
Fig. 82 shows several ways of obtaining this reverse bias. In Fig. 82a, the
base lead is returned to ground
through an rf choke. When the transistor is driven, the dc base current
causes a voltage drop across the
ohmic base .lead resistance rb' in the
right direction to provide a slight
reverse bias for the base-to-emitter
junction. However, this bias is u~u
ally small in magnitude and· is difficult to control because the value of
r.' varies for different transistors.
The separate battery supply included in the base circuit in Fig. 82b
is a good way of obtaining reverse
bias for the transistor, but a particular circuit design may not permit an
additional supply to be used. In Fig.
82c, the resistor RB included in the
base circuit· constitutes a form of
"self-bias". However, a disadvantage
of this circuit is that too high a value
of RB restricts the usable collector-toemitter breakdown voltage to a value
close to the Vemo rating.
The arrangement shown in Fig.
82d represents the best way of ob-
taining reverse bias for class C operation. This method does not affect the
breakdown characteristic of the transistor, and provides both thermal
stability and high efficiency. The capacitor. 0" must provide an effective
bypass at the operating frequency to
reduce the. degenerative effects of
RIO. For transistors in which- the
emitter is internally connected to the
case, such as the 40341, the case
should be electrically isolated from
the chassis, and the biasing Tesistor
and bypass capacitor should then be
conne.cted from case to ground. An
alternate method is to connect the
negative end of the power supply to
the chassis through a biasing resistor, bolt the transistor directly to the
chassis, and then return the base .of
the .transistor through an rf choke
to the negative end of the supply.
When more power is required from
an. rf-power-~mplifier circuit than
can be obtained from a single transistor, several transistors can be arranged in either parallel or push-pull.
In a push-pull arrangement, trans-
Transistor Applications
59
formers must be used for proper
input-signal phase. Because it is difficult to build transformers which
provide the required impedance transfer at very high frequencies, this
type of operation can be inefficient
for transistors.
Power transistors have been operated successfully in parallel arrangements in many practical circuit
designs at frequencies up to 500
megacycles per second. The major
design problem in the parallel operation of transistors is equal load
sharing, i.e., all transistors in the
parallel setup should deliver equal
power to the load. In general, load
sharing depends on the degree of
match of the separate units. Transistors used in an ideal, perfectly balanced circuit should have identical
power gain, input and output impedances, and thermal resistance. In
practice, experiments have shown
that a circuit can generally be considered as balanced if the static currents match within 10 per cent. If
a closer degree of balance is required, it is necessary to pre-select
transistors in a single-stage circuit.
Fig. 83 shows two 2N3733 overlay
transistors operated in a parallel arrangement. This circuit includes provisions for monitoring the collector
currents to assure equal load sharing. The effects of the emitter-lead
inductance are tuned out by capacitor CEo Total direct current for each
transistor can also be determined by
measuring the dc voltage across the
emitter resistor RE and dividing by
the value of the emitter resistor used.
The emitter circuit represents the
best place for monitoring current
sharing in a parallel arrangement to
establish that both input and output
currents are equal.
Paralleling of transistors for lowvoltage operation is somewhat more
complex. Because collector load impedances are very low and currents
very high, it is mechanically difficult
to locate the paralleled transistors in
such a manner that the same load impedance is presented to both collectors. For example, the collector load
impedance RL for the 18-watt amplifier of Fig. 83 operating at 28 volts
,....---c8>----o+28 V
~~:9--~()+28V
=
Figure 83.
High-frequency power amplifier using two 2N3733 overlay transistors in
a paranel arrangement.
60
is approximately equal to Vcc"!2P. =
784/36 = 21.8 ohms. For a similar
18-watt· amplifier operated at 12
volts, the value of RIo is equal to
144/36, or only 4 ohms. At low voltages, therefore, it is necessary to
step up the impedance for the individual collectors by means of rf
chokes inserted in the collector leads
before the outputs of the individual
transistors are tied together.
One of the most common problems
encountered in the design of vhf
power amplifiers is low-frequency
parasitic oscillations. Such oscillations are caused both by stray lowfrequency resonances formed between external circuits and internal
transistor capacitances and by the
very large power gains of which vhf
transistors are capable at low frequencies. The following methods can
be used to minimize these low-frequency oscillations:
1. A low-Q ferrite choke should be
used for the base return to
ground; the value should be the
smallest possible that does not
impair the amplifier gain at
operating frequencies.
2. The emitter should be bypassed
at the operating frequency with
a capacitor of relatively low
value to make the stage degenerative at lower frequencies.
3. Wherever possible, the output
circuit should utilize a dc feed
coil as an integral part of the
network.
4. The power leads should be
effectively bypassed with a
feedthrough capacitor at the
operating frequency and a disc
ceramic capacitor that makes
an effective short at low frequencies.
In many military and amateur
radio applications, rf power transistors are often used in single-sideband circuits. Single-sideband (SSB)
modulation is a special form of amplitude modulation (AM) in which
only one sideband is transmitted and
the carrier is suppressed to the point
of extinction. A brief review of AM
RCA Transistor Manual
characteristics helps to explain the
principles of SSB operation.
When a carrier frequency is modulated by an audio modulating frequency, three components are produced: the carrier, which has an amplitude independent of modulation,
and two other components which have
equal amplitude but have frequencies
above and below the carrier frequency by the amount of the modulating frequency. The two latter
components, which carry identical
intelligence, are called sideband frequencies. Their amplitude depends on
the degree of modulation. Because
only these sidebands transmit intelligence and each sideband is a mirror
image of the other, the carrier and
one sideband can be eliminated and
only the remaining sideband used for
transmission of intelligence. This
technique results in single-sideband
transmission.
One advantage of single-sideband
transmisison is a reduction in average power. A comparison of total
average power radiated by AM and
SSB transmitters for equal signalto-noise ratios shows that the carrier
power is twice the total sideband
power in a 100-per-cent modulated
AM wave. If the carrier power is
unity, the total radiated power is 1.5
units (1 + 0.25 + 0.25 = 1.5). An
SSB transmitter under similar conditions has 0.5 unit of radiated power
(peak envelope power
2 X 0.25).
Thus, the total average power for
AM is three times the average power
for SSB. If a conservative 10-to-l
peak-to-average power ratio is assumed for a voice signal, the average
power output is 1.05 units for AM
and 0.05 unit for SSB.
Another advantage of SSB is that
it requires a narrower frequency
spectrum, one-half that required by
AM. The use of minimum bandwidth
in the transmitter permits a greater
number of channel allocations within
a given frequency range. To ensure
that a minimum band is occupied by
the transmission, it is important to
make use of low-distortion linear am-
=
Transistor Applications
plifiers. As a result, class B, AB, and
A amplifiers are generally used in
preference to class C amplifiers and
frequency multipliers.
TV SCANNING,
SYNC, AND DEFLECTION
For reproduction of a transmitted
picture in a television receiver, the
face of a cathode-ray tube is scanned
with an electron beam while the intensity of the beam is varied to control the emitted light at the phosphor
screen. The scanning is synchronized
with a scanned image at the TV transmitter, and the black-through-white
picture areas of the scanned image
are converted into an electrical signal that controls the intensity of the
electron beam in the picture tube at
the receiver.
Scanning Fundamentals
The scanning procedure used in
the United States employs horizontal linear scanning in an oddline interlaced pattern. The standard
scanning pattern for television systems includes a total of 525 horizontal scanning lines in a rectangular
frame having an aspect ratio of 4 to
3. The frames are repeated at a rate
of 30 per second, with two fields interlaced in each frame. The first field in
each frame consists of all odd-number
scanning lines, and the second field
in each frame consists of all evennumber scanning lines. The field repetition rate is thus 60 per second, and
the vertical scanning rate is 60 cycles
per second.
The geometry of the standard odd-
61
line interlaced scanning pattern is
illustrated in Fig. 84. The scanning
beam starts at the upper left corner
of the frame at point A, and sweeps
across the frame with uniform velocity to cover all the picture elements in one horizontal line. At the
end of each trace, the beam is rapidly
returned to the left side of the frame,
as shown by the dashed line, to begin
the next horizontal line. The horizontal lines slope downward in the direction of scanning because the
vertical deflecting signal simultaneously produces a vertical scanning
motion, which is very slow compared
with the horizontal scanning speed.
The slope of the horizontal line trace
from left to right is greater than the
slope of the retrace from right to left
because the shorter time of the retrace does not allow as much time
for vertical deflection of the beam.
Thus, the beam is continuously and
slowly deflected downward as it scans
the horizontal lines, and its position
is successively lower as the horizontal scanning proceeds.
At the bottom of the field, the vertical retrace begins, and the beam is
brought back to the top of the frame
to begin the second or even-number
field. The vertical "flyback" time is
very fast compared to the trace, but
is slow compared to the horizontal
scanning speed; therefore, some horizontal lines are produced during the
vertical flyback.
All odd-number fields begin at
point A in Fig. 84 and are the same.
All even-number fields begin at point
C and are the same. Because the beginning of the even-field scanning at
C is on the same horizontal level as
c
A
---+-
----
--+B
Figure 84.
o
The odd-line interlaced scanning procedure.
RCA Transistor Manual
62
A, with a separation of one-half line,
and the slope of all lines is the same,
the even-number lines in the even
fields fall exactly between the oddnumber lines in the odd field.
Sync
In addition to picture information,
the composite video signal from the
video detector of a television receiver
contains timing pulses to assure that
the picture is produced on the faceplate of the picture tube at the right
instant and in the right location.
These pulses, which are called sync
pulses, control the horizontal and
vertical scanning generators of the
receiver.
Fig. 85 shows a portion of the detected video signal. When the picture
is bright, the amplitude of the signal
is low. Successively deeper grays are
represented by higher amplitudes
until, at the "blanking level" shown
in the diagram, the amplitude represents a complete absence of light.
This "black level" is held constant at
a value equal to 75 per cent of the
maximum amplitude of the signal
during transmission. The remaining
25 per cent of the signal amplitude
is used for synchronization information. Portions of the signal in this
region (above the black level) cannot produce .light.
In the transmission of a television
picture, the camera becomes inactive
at the conclusion of each horizontal
line and no picture information is
transmitted while the scanning beam
is retracing to the beginning of the
next line. The scanning beam of the
receiver is maintained at the black
level during this retrace interval by
means of the blanking pulse shown
in Fig. 85. Immediately after the beginning of the blanking period, the
signal amplitude rises further above
the black level to provide a horizontal-synchronization pulse that initiates the action of the horizontal
scanning generator. When the bottom line of the picture is reached, a
similar vertical-synchronization pulse
initiates the action of the vertical
scanning generator to mov~ the
scanning spot back to the top of the
pattern.
The sync pulses in the composite
video signal are separated from the
picture information in a syne-separator stage, as shown in Fig. 86. This
stage is biased sufficiently beyond
cutoff so that current flows and an
output signal is produced only at the
peak positive swing of the input signal. In the diode circuit of Fig. 86a,
negative bias for the diode is developed by Rand C as a result of the
tlow of diode current on the positive
extreme of signal input. The bias automatically adjusts itself so that the
peak positive swing of the input signal drives the anode of the diode positive and allows the flow of current
only for the sync pulse. In the circuit shown in Fig. 86b, the baseemitter junction of the transistor
funetions in the same manner as the
diode in Fig. 86a, but in addition
the pulses are amplified.
Mter the synchronizing signals
are separated from the composite
video signal, it is necessary to filter
out the horizontal and vertical sync
- - - MAXIMUM LEVEL
- - BLACK LEVEL OR
BLANKING LEVEL
PICTURE
NFORMATION
o~
-- - - MAXIMUM WHITE
LEVEL
___________________________
Figure 85. Detected video signal.
Transistor Applications
63
o---ll----.-..,
Ei
C
Eo
R
(a)
Figure 86.
(b)
Sync-separator circuits using (a) a diode, and (b) a transistor.
signals so that each can be applied
to its respective deflection generator.
This filtering is accomplished by RC
circuits designed to filter out all but
the desired synchronizing signals.
Although the horizontal, vertical, and
equalizing pulses are all rectangular
pulses of the same amplitude, they
differ in frequency and pulse width,
as shown in Fig. 87. The horizontal
sync pulses have a repetition rate
of 15,750 per second (one for each
horizontal line) and a pulse width
of 5.1 microseconds. The equalizing
. pulses have a width approximately
half the horizontal pulse width, and
a repetition rate of 31,500 per second; they occur· at half-line intervals, with six pulses immediately
preceding and six following the vertical synchronizing pulse. The vertical. pulse is repeated at a rate of
60 per second (one for each field),
and has a width of approximately
190 microseconds. The serrations in
the vertical pulse occur at half-line
intervals, dividing the complete pulse
into six· individual pulses that provide horizontal synchronization during the vertical retrace.· (AlthQugh
the picture is blanked out during the
vertical retrace time, it is necessary
to keep the horizontal scanning
generator synchronized.)
All the pulses described above are
produced at the transmitter by the
synchronizing-pulse generator; their
waveshapes and spacings are held
within very close tolerances to provide the required synchronization of
receiver and transmitter scanning.
The horizontal sync signals are
separated from the total sync in a
differentiating circuit that has a
short time constant compared to the
width of the horizontal pulses. When
the total sync signal is applied to
the differentiating circuit shown in
Fig. 88, the capacitor charges completely very soon after the leading
edge of each pulse, and remains
charged for a period of time equal
to practically the entire pulse width.
When the applied voltage is removed
at the time corresponding to the
trailing edge of each pulse, the capacitor discharges completely within
a very short. time. As a result, a
positive peak of voltage is obtained
for each leading edge and a negative
VERTICAL. PUL.SE
190.5,..
1-----3H---t
Figure 87.
L.EADING
EDGE
Waveform of TV synchronizing pulses (H = horizontal line period of
1/15,750 seconds, or 63.5 /Ls).
RCA Transistor Manual
64
EOUALIZING
PULSES
HORIZ.·
PULSES
EOUALIZING
PULSES
VERTICAL
PULSE
HORIZ.
PULSES
+
\".. r
INPUT
~..
RC oO.215,.s
~
-f
Figure 88.
OUTPUT
<) /
v vlv v ~ ~ ~
lllllllllllllllllll l l
r
V
V
~
"",....AttO
OHMS
V
rrr!!r rf!I!III!!!11 I I
SeparatiDn of the horizontal sync signals from the total sync by a
differentiating circuit.
peak for the trailing edge of every
pulse. One polarity is produced by
the charging current for the leading
edge of the applied pulse, and the
opposite polarity is obtained from
the discharge current corresponding
to the trailing edge of the pulse.
As mentioned above, the serrations
in the vertical pulse are inserted
to provide the differentiated output
needed to synchronize the horizontal
scanning generator during the time
of vertical synchronization. During
the vertical blanking period, many
more' voltage peaks are available
than are necessary for horizontal
sYJ;lchronization (only one pulse' is
used for each horizontal line period).
The check marks above the differentiated output in Fig. 88 indicate the
voltage peaks used to synchronize
the horizontal deflection generator
for one field. Because the ,sync system is made sensitive only to positive
pulses 'Occurring at approximately
the right horizontal timing, the negative sync pulses and alternate differentiated positive pulses produced
by the equalizing. pulses and the serrated vertical information have no
effect on horizontal timing. It can be
seen that although the total sync
signal (including vertical synchronizing information) is applied to the
circuit of Fig. 88, only horizontal
synchronization information appears
at the output.
The vertical sync signal is· separated from the total .sync in an integrating circuit which has a time.
constant that is long compared with
the duration of the 5-microsecond
horizontal pulses, but short compared
with the 190-microsecond vertical
pulse width. Fig. 89 shows the general circuit configuration used, together with the input and output
signals for both odd and even fields.
IN~~T
o
..... 0
H
H
V
~PUT
000 FIELDS
_____________
~_~.!!"lT
___
J=--:.~_-_-:._-_- ~==:==~~_
~NPUT
:~:!PUT
Figure 89. Separation of vertical sync
signals from the total sync for odd and
even fields with no equalizing pulses.
(Dashed line indicates triggering level for '
vertical scanning generator.)
65
Transistor Applications
The period between horizontal pulses,
when no voltage is applied to the RC
circuit, is so much longer than the
horizontal pulse width that the capacitor has time to discharge almost
down to zero. When the vertical pulse
is applied, however, the integrated
voltage across the capacitor builds
up to the value required for triggering the vertical scanning generator.
This integrated voltage across the
capacitor reaches its maximum amplitude at the end of the vertical
pulse, and then declines practically
to zero, producing a pulse of the triangular wave shape shown for
the complete vertical synchronizing
pulse. Although the total sync signal (including horizontal information) is applied to the circuit of Fig.
89, therefore, only vertical synchronization information appears at the
output.
The vertical synchronizing pulses
are repeated in the total sync signal
at the field frequency of 60 per second. Therefore, the integrated output voltage across the capacitor of
the RC circuit of Fig. 89 can be
coupled to the vertical scanning
generator to provide vertical synchronization. The si~ equalizing
pulses immediately preceding and
following the vertical pulse improve
the accuracy of the vertical synchronization for better interlacing. The
equalizing pulses that precede the
vertical pulses make the average
value of applied voltage more nearly
the same for even and odd fields, so
that the integrated voltage across
the capacitor adjusts to practically
equal values for the two fields before
the vertical pulse begins. The equalizing pulses that follow the vertical
pulse minimize any difference in the
trailing edge of the vertical synchronizing signal for even and odd fields.
Horizontal Deflection
In the horizontal-deflection stages
of a television receiver, a current that
varies linearly- with time and has a
sufficient peak-to-peak amplitude
must be passed through the horizontal-deflection-yoke winding to develop
a magnetic field adequate to deflect
the electron beam of the television
picture tube. (This type of deflection
is different from that used in a
cathode-ray oscilloscope, where the
beam is deflected electrostatically.)
After the beam is deflected completely across the face of the picture
tube, it must be returned very
quickly to its starting point. (As explained previously, the beam is extinguished during this retrace by the
blanking pulse incorporated in the
composite video signal, or in some
cases by additional external blanking derived from the horizontal-deflection system.)
The simplest form of a deflection
circuit is shown in Fig. 90. In this
Figure
90.
Simplest form
circuit.
of
deflection
circuit, the yoke impedance L is assumed to be a perfect inductor. When
the switch is closed, the yoke current
starts from zero and increases linearly. At any time t, the current i is
equal to Et/L, where E is the applied voltage. When the switch is
opened at a later time t " the current
instantly drops from a value of Et,/L
to zero.
Although the basic circuit of Fig.
90 crudely approaches the requirements for deflection, it presents some
obvious problems and limitations. The
voltage across the switch becomes
extremely high, theoretically approaching infinity. In addition, if
very little of the total time is spent
at zero current, the circuit would
require a tremendous amount of dc
power. Furthermore, the operation
of the switch would be rather critical with regard to both its opening
and its closing. Finally, because the
deflection field would be phased in
RCA Transistor Manual
66
only one direction, the beam would
have to be centered at the extreme
left of the screen for zero yoke
current.
If a capacitor is placed across the
switch, as shown in Fig. 91, the yoke
current still increases linearly when
the switch is closed at time t = O.
However, when the switch is opened
at time t
t 1, a tuned circuit is
formed by the parallel combination
of Land C. The resulting yoke currents and switch voltages are then
as shown in Fig. 91. The current is
=
+ 1I 1~
T
}~~ 1\ 1\ 1\
:
I
V Vv\
'tt, 1\ 1\ 1\
vvv
Figure 91. Addition of capacitor to permit
flyback ringing, and )/oke-current (upper)
and switch·voltage (lower) waveforms.
at a maximum when the voltage
equals zero, and the voltage is at a
maximum when the current equals
, zero. If it is assumed that there are
no losses, the ringing frequency fose
is equal to 1/ (2.".yLC).
If the switch is closed again at any
time the capacitor voltage is not equal
to zero, an infinite switch current
flows as a result of the capacitive discharge. However, if the switch is
closed at the precise moment t. that
the capacitor voltage equals zero, the
capacitor current effortlessly transfers to the switch, and a new transient
condition results. Fig. 92 shows
the yoke-current and switch-voltage
waveforms for this new condition.
Figure 92. Yoke-current (upper) and
switch-voltage (lower) waveforms
when switch is closed at to.
If the switch' is again opened at
t., closed at t., and so on, the desired
sweep results, the peak switch voltage is finite, and the average supply
current is zero. The deflection system
is then lossless and efficient and, because the average yoke current is
zero, beam decentering is avoided.
The only fault of the circuit of Fig.
91 is the critical timing of the switch,
particularly at time t
t •. However,
if the switch is shunted by a damper
diode, as shown in Fig. 93, the diode
acts as a closed switch as soon as the
capacitor voltage reverses slightly.
=
s
o
Figure 93.
c
Inc~Fo~:.tion of damper
The switch may then be closed at any
time between t. and ts.
In typical horizontal-deflection circuits, the switch is a transistor, as
shown in Fig. 94. Although the transistor is forward-biased prior to t.,
it is not an effective switch for the
reverse collector current; therefore,
the damper diode carries most of this
current. High voltage is generated
by use of the step-up transformer
Tl in parallel with the yoke. This
step-up transformer is designed so
that its leakage . inductance, distributed capacitance, and output
stray capacitance complement the
yoke inductance and retrace tuning
capacitance in such a manner that the
peak voltage across the primary
67
Transistor Applications
TI
FLYBACK
TRANSFORMER
I
CI
FLYBACK
~MOTORI
Figure 94.
PICTURE -TUBE
ANODE (ULTOR)
CAPACITANCE
YOKE
C2
S-SHAPING
ICAPACITOR
Simple transistor horizontal-deflection circuit.
winding is reduced and the peak voltage across the secondary winding is
increased, as compared to the values
that would be obtained in a perfect
transformer. This technique, which is
referred to as "third-harmonic tuning", yields a voltage ratio of secondary-to-primary peak voltage of approximately 1.7 times the value
expected in a perfect transformer.
To provide linearity correction for
wide-angle television picture tubes,
it is necessary to retard the sweep
rate at the beginning and end of scan.
Therefore, a suitable capacitor C. is
placed in series with the yoke, as
shown in Fig. 94, so that the direct
current required to supply circuit
losses is fed through the flybacktransformer primary. A parabolic
waveform is then developed across
Co (called the S-shaping capacitor)
so that the trace voltage across the
yoke is less at the ends of the sweep
than iIi the middle of the sweep. (This
capacitor actually provides a series
resonant circuit tuned to approximately 5 kilocycles per second so
that an S-shaped current portion of
a sine wave results.) It is desirable
to place the S-shaping capacitor and
the yoke between the collector and
the emitter of the transistor so
that the yoke current does not have
to flow through the power supply.
The highest anticipated peak voltage across the transistor in Fig. 94
is a function of the dc voltage obtained at high ac line voltage and at
the lowest horizontal-oscillator frequency. (At these conditions, of
course, the receiver is out of sync.)
The tolerance on the inductors and
capacitors alters the trace time only
slightly and usually may be ignored
if a 10-per-cent tolerance is used for
the tuning capacitor.
Vertical Deflection
The vertical-deflection circuit in a
television receiver is essentiaIIy a
class A audio amplifier with a complex load line, severe low-frequency
requirements (much lower than 60
cycles per second), and a need for
controlled linearity. The equivalent
low-frequency response for a 10-percent deviation from linearity is one
cycle per second. The basic circuit
configuration is shown in Fig. 95.
The required performance can be
obtained in a vertical-deflection circuit in any of three ways. The amplifier may be designed to provide a
flat response down to one cycle per
second. This design, however, requires an extremely large output
transformer and immense capacitors.
Another arrangement is to design the
amplifier for fairly good low-fre-
RCA Transistor Manual
68
quency response and predistort the
generated signal.
The third method is to provide extra gain so that feedback techniques
can be used to provide linearity. If
loop feedback of 20 or 30 dB is used,
transistor gain variations and nonlinearities become fairly insignificant. The feedback automatically
provides the necessary "predistortion" to correct low-frequency limi-
E
Figure 95.
Simille vertical-deflection
circuit.
tations. In addition, the coupling of
miscellaneous signals (such as powersupply hum or horizontal-deflection
signals) in the amplifying loop is
suppressed.
OSCILLATION
Transistor oscillator circuits are
similar in many respects to the amplifiers discussed previously, except that a portion of the output
power is returned to the input network in phase with the starting
power (regenerative or positive feed-
back) to sustain oscillation. DC biasvoltage requirements for oscillators
are similar to those discussed for
amplifiers.
The maximum operating frequency
of an oscillator circuit is limited by
the frequency capability of the transistor used. The maximum frequency
of oscillation of a transistor is defined as the frequency at which the
power gain is unity. Because some
power gain is required in an oscillator circuit to overcome losses in the
feedback network, the operating
frequency must be some value below
the transistor maximum frequency
of oscillation.
For sustained oscillation in a transistor oscillator, the power gain of
the amplifier network must be equal
to or greater than unity. When the
amplifier power gain becomes less
than unity, oscillations become
smaller with time (are "damped")
until they cease to exist. In practical oscillator circuits, power gains
greater than unity are required because the power output is divided
between the load and the feedback
network, as shown in Fig. 96. The
feedback power must be equal to the
input power plus the losses in the
feedback network to sustain oscillation.
FEEDBACK
NETWORK
LC Resonant Feedback Oscillators
The frequency-determining elements of an oscillator circuit may
consist of an inductance-capacitance
-
FEEDBACK
POWER
-
E
INPUT POWER-
OUTPUT POWER
B
Figure. 96
-LOAD
POWER
Block diagram of transistor oscillator showing division of output power.
69
Transistor Applications
(LC) network, a crystal, or a resistance-capacitance (RC) network. An
LC tuned circuit may be placed in
either the base circuit or the collector circuit of a common-emitter transistor oscillator. In the tuned-base
oscillator shown in Fig. 97, one
battery is used to provide all the
dc operating voltages for the transistor. Resistors R" R., and R. provide the necessary bias conditions.
A tuned-collector transistor oscillator is shown in Fig. 98. In this
circuit, resistors R. and R, establish
the base bias. Resistor R, is the
emitter stabilizing resistor. Capacitors C, and C, bypass ac around
resistors R, and R 2, respectively. The
tuned circuit consists of the primary
winding of transformer T and the
variable capacitor Ca. Regeneration
is accomplished by coupling the feed-
r---------
, T 3
2
4
OUTPUT
c,
R,
..".1
L ___________
..J
Figure 97.
Tuned-base oscillator.
Resistor R. is the emitter stabilizing resistor. The components within
the dotted lines comprise the transistor amplifier. The collector shuntfeed arrangement prevents dc current flow through the tickler
(primary) winding of transformer
T. Feedback is accomplished by the
mutual inductance between the transformer windings.
The tuned circuit consisting of the
secondary winding of transformer T
and variable capacitor C, is the frequency-determining element of the
oscillator. Variable capacitor C, permits tuning through a range of frequencies. Capacitor Co couples the
oscillation signal to the base of the
transistor, and also blocks dc. Capacitor C. bypasses the ac signal
around the emitter resistor R. and
prevents degeneration. The output
signal is coupled from the collector
through coupling capacitor C. to the
load.
back signal from transformer wind":
ing 3-4 to the tickler coil winding
1-2. The secondary winding of the
transformer couples the signal output to the load.
Another form of LC resonant
feedback oscillator is the transistor
T
5
~ OU~UT
6
c,
Figure
98.
Tuned-collector
oscillator.
70
RCA Transistor Manual
version of the Colpitts oscillator,
shown in Fig. 99. Regenerative
feedback is obtained from the tuned
circuit consisting of capacitors C.
and C. in parallel with the primary winding of the transformer,
TI
2
~:OU~UT
--=-vcc
+'
Figure 99.
Transistor Colpitts oscillator.
and is applied to the emitter of the
transistor. Base bias is provided by
resistors R. and R.. Resistor R. is
the collector load resistor. Resistor
R, develops the emitter input signal
and also acts as the emitter stabilizing resistor. Capacitors C. and C.
form a voltage divider; the voltage
developed across C. is the feedback
voltage. The frequency and the
amount of feedback voltage can be
controlled by adjustment of either
or both capacitors. For minimum
feedback loss, the ratio of the capacitive reactance between C. and
C. should be approximately equal to
the ratio between the output impedance and the input impedance of the
transistor.
A Clapp oscillator is a modification of the Colpitts circuit shown in
Fig. 99 in which a capacitor is added
in series with the primary winding
of the transformer to improve frequency stability. When the added
capacitance is small compared to
the series capacitance of C. and C.,
the oscillator frequency is determined by the series LC combination
of the transformer primary and the
added capacitor. A Hartley oscillator is similar to the Colpitts
oscillator, except that a split inductance is used instead of a split capacitance to obtain feedback.
Crystal Oscillators
A quartz crystal is often used
as the frequency-determining element in a transistor oscillator circuit
because of its extremely high Q (narrow bandwidth) and. good frequency
stability over a given temperature
range. A quartz crystal may be
operated as either a series or parallel resonant circuit. As shown in Fig.
100, the electrical equivalent of the
mechanical vibrating characteristic
of the crystal can be represented by
a resistance R, an inductance L,
and a capacitance Cs in series. The
lowest impedance of the crystal occurs at the series resonant frequency
of C. and L; the resonant frequency
of the circuit is then determined
only by the mechanical vibrating
characteristics of the crystal.
The parallel capacitance Cp shown
in Fig. 100 represents the electrostatic capacitance between the crystal
electrodes. At frequencies above the
R
CPT
~L
o--LJcs
Figure 100.
Equivalent circuit of quartz
crystal.
series resonant frequency, the combination of Land C s has the effect
of a net inductance because the inductive reactance of L is greater
than the capacitive reactance of C s •
This net inductance forms a parallel
resonant circuit with Cp and any circuit capacitance across the crystal.
The impedance of the crystal is
highest at the parallel resonant frequency; the resonant frequency of
71
Transistor Applications
the circuit is then determined by
both the crystal and externally connected circuit elements.
Increased frequency stability can
be obtained in the tuned-collector
and tuned-base oscillators discussed
previously if a crystal is used in the
feedback path. The oscillation frequency is then fixed by the crystal.
At frequencies above and below the
series resonant frequency of the crystal, the impedance of the crystal increases and the feedback is reduced.
Thus, oscillation is prevented at frequencies other than the series resonant frequency.
The parallel mode of crystal resonance is used in the Pierce oscillator
shown in Fig. 101. (If the crystal
were replaced by its equivalent circuit, the functioning of the oscillator
would be analogous to that of the
Colpitts oscillator shown in Fig. 99.)
The resistances shown in Fig. 101
provide the proper bias and stabilizing conditions for the common-emitter circuit. Capacitor C, is the
C4
r------<~---;r-o
Figure 101.
Pierce-type transistor crystal
oscillator.
emitter bypass capacitor. The required 180-degree phase inversion of
the feedback signal is accomplished
through the arrangement of the voltage-divider network C. and C.. The
connection between the capacitors is
grounded so that the voltage developed across C. is applied between
base and ground and 180-degree
phase reversal is obtained. The oscillating frequency of the circuit is de-
termined by the crystal and the
capacitors connected in parallel with
it.
RC Feedback Oscillators
A resistance-capacitance (RC) network is sometimes used in place of
an inductance-capacitance network
when phase shift is required in a
transistor oscillator. In the phaseshift oscillator shown in Fig. 102, the
Figure 102.
Transistor RC phase-shift
oscillator.
RC network consists of three sections (C,R" C.R., and C.R,), each of
which contributes a phase shift of 60
degrees at the frequency of oscillation. Because the capacitive reactance of the network increases or
decreases at other frequencies, the
180-degree phase shift required for
the common-emitter oscillator occurs
only at one frequency; thus, the output frequency of the oscillator is
fixed. Phase-shift oscillators may be
made variable over particular frequency ranges by the use of ganged
variable capacitors or resistors in the
RC networks. Three or more sections must be used in the phaseshifting networks to reduce feedback
losses. The use of more sections contributes to increased stability.
Nonsinusoidal Oscillators
Oscillator circuits which produce
nonsinusoidal output waveforms use
a regenerative circuit in conjunction
with resistance-capacitance (RC) or
72
RCA Transistor Manual
resistance-inductance
(RL) components to produce a switching action. The charge and discharge
. times of the reactive elements (R x
C or LIR) are used to produce sawtooth, square, or pulse output waveforms.
A multi vibrator is essentially a
nonsinusoidal two-stage oscillator in
which one stage conducts while the
other is cut off until a point is
reached at which the conditions of
the stages are reversed~ This type of
oscillator is normally used to produce a square-wave output. In the
RC-coupled common-emitter multivibrator shown in Fig. 103, the output of transistor Q, is coupled to the
input of transistor Q. through the
feedback capacitor C" and the output of· Q. is coupled to the input of
Q, through the feedback capacitor
C•.
Figure
103.
RC-coupled
Q. into cutoff. Q. is maintained in a
cutoff condition by C, (which was
previously .charged to the supply
voltage through resistor R,) until
C, discharges through R. toward the
collector-supply potential. When the
junction of C, and R. reaches a slight
positive voltage, however, transistor
Q. begins to start into conduction and
the regenerative process reverses.
Q. then reaches a saturation condition, Q, is cut off by the reverse bias
applied to its base through C" and
the C.R. junction starts charging
toward the collector supply voltage.
The oscillating frequency of the
multivibrator is determined by the
values of resistance and capacitance
in the circuit.
A blocking oscillator is a form of
nonsinusoidal oscillator which conducts for a short period of time and
is cut off (blocked) for a much longer
common-emitter
In the multivibrator circuit, an increase in the collector current of
transistor Q, causes a decrease in
the collector voltage which, when
coupled through capacitor C, to the
base of transistor Q., causes a decrease in the collector current of Q•.
The resultant rising voltage·at the
collector of Q., when coupled through
capacitor C. to the base of Q" drives
Q, further into conduction. This regenerative process occurs rapidly,
driving Q, into heavy saturation and
multivibrator.
period. A basic circuit for this type
of oscillator is shown in Fig. 104.
Regenerative feedback through the
tickler-coil winding 1-2 of transformer T,and capacitor C causes
current through the transistor to rise
rapidly until .:.saturation is reached.
The transistor is then cut off until C
discharges through resistor R. The
output waveform is a pulse, the width
of which is primarily determined by
winding 1-2. The time between pulses
(resting or blocking time) is deter-
73
Transistor Applications
.--_ _ _ _ _ _ _ _..!..I TI
J
1
3(:
c
4
I'>
R
Vee=-
Figure 104.
+
Basic circuit of blocking
oscillator.
mined by the time constant of capacitor C and resistor R.
FREQUENCY CONVERSION
Transistors can be used in various
types of circuits to change the frequency of an incoming signal. In
radio and television receivers, frequency conversion is used to change
the frequency of the rf signal to an
intermediate frequency. In communications transmitters, frequency multiplication is often used to raise the
frequency of the developed rf signal.
In a radio or television receiver,
the oscillating and mixing functions
are performed by a nonlinear device
such as a diode or a transistor. As
shown in the diagram of Fig. 105,
two voltages of different frequencies,
the rf signal voltage and the voltage
generated by the oscillator, are applied to the input of the mixer. These
voltages "beat," or heterodyne,
within the mixer transistor to produce a current having, in addition
RAOIOFREQUENCY
INPUT
...-_ _ _-.;INTERMEOIATEFREQUENCY
OUTPUT
Figure 105. Block diagram of simple
frequency-converter circuit.
to the frequencies of the input voltages, numerous sum and difference
frequencies.
The output circuit of the mixer
stage is provided with a tuned circuit which is adjusted to select only
one beat frequency, i.e., the frequency equal to the difference between the signal frequency and the
oscillator frequency. The selected
output frequency is known as the
intermediate frequency, or if. The
output frequency of the mixer transistor is kept constant for all values
of signal frequency by tuning of the
oscillator transistor.
In AM broadcast-band receivers,
the oscillator and mixer functions
are often accomplished by use of a
single transistor called an "autodyne converter". In FM and television receivers, stable oscillator
operation is more readily obtained
when a separate transistor is used
for the oscillator function. In such
a circuit, the oscillator voltage is
coupled to the mixer by inductive
coupling, capacitive coupling, or a
combination of the two.
An automatic frequency control
(afc) circuit is often used to provide
automatic correction of the oscillator frequency of a superheterodyne
receiver when, for any reason, it
drifts from the frequency which produces the proper if center frequency.
This correction is made by adjustment of the frequency of the oscillator. Such a circuit automatically
compensates for slight changes in
rf carrier or oscillator frequency, as
well as for inaccurate manual or
push-button tuning.
An afc system requires two sections: a frequency detector and a
variable reactance. The detector section may be essentially the same as
the FM detector illustrated in Fig.
42. In the afc system, however, the
output is a dc control voltage, the
magnitude of which is proportional
to the amount of frequeo/y shift.
This dc control voltage is used to
control the bias on a transistor or
diode which comprises the variable
reactance.
74
RCA Transistor Manual
Automatic frequency control is
also used in television receivers to
keep the horizontal oscillator in step
with the horizontal-scanning frequency at the transmitter. A widely
used horizontal afc circuit is shown
in Fig. 106. This circuit, which is
often referred to as a balancedphase-detector or phase-discriminator circuit, is usually employen to
control the frequency of the horizontal-oscillator circuit. The detector
diodes supply a dc control voltage
to the horizontal-oscillator circuit
times, therefore, because momentary changes in oscillator frequency
are instantaneously corrected by the
action of this control voltage. The
network between the diodes and the
horizontal-oscillator circuit is essentially a low-pass filter which prevents the horizontal sync pulses
from affecting the horizontal-oscillator performance.
Frequency multipliers are another
type of frequency-conversion circuits.
Because the output-current waveform of power transistors can be
DC CORRECTION
TO
HORIZONTAL
OSCILLATOR
r o-\l-___-~'V'IAr.......-'\fV'Irl_+,VOLTAGE
SYNC - ,
SIGNALS -U
FROM
PHASE
.jonL o-\f-_-+--'VV\,.-+
INVERTER~
N../'
REFERENCE''-~VV~~-~
VOLTAGE FROM
HORIZONTAL
OUTPUT CIRCUIT
Figure 106.
Balanced-phase-detector or phase-discriminator circuit
which counteracts changes in its
operating frequency. The magnitude
and polarity of the control voltages
are determined by phase relationships in the afc circuit.
The horizontal sync pulses obtained from the sync-separator circuit are fed through a phase-inverter
or phase-splitter circuit to the two
diode detectors. Because of the action of the phase-inverter circuit,
the signals applied to the two diode
units are equal in amplitude but 180
degrees out of phase. A reference
sawtooth voltage obtained from the
horizontal output circuit is also applied simultaneously to both units.
The diodes are biased so that conduction takes place only during the
tips of the sync pulses. Any change
in the oscillator frequency alters
the phase relationship betwen the
reference sawtooth and the incoming
horizontal sync pulses, and thus
causes one of the diodes to conduct
more heavily than the other. so that
a correction signal is produced. The
system remains balanced at all
tor
horizontal
atc.
made to contain both fundamental
and harmonic frequency components,
power output can be obtained at
a desired harmonic frequency by use
of a special type of output circuit
coupled to the collector of the transistor. Transistors can be connected
in either the common-base or the
common-emitter configuration for
frequency multiplication.
The design of transistor frequency-multiplier circuits consists of
selection of a suitable transistor and
design of filtering and matching networks for optimum circuit performance. The transistor must be capable
of power and gain at the fundamental frequency and capable of converting power from the fundamental
to a harmonic frequency. At a given
input power level, the output power
at a desired harmonic frequency is
equal to the product of the power
gain of the transistor at the drive
frequency and the conversion efficiency of the frequency-multiplier
circuit. Conversion gain can be obtained only when the power gain of
Transistor Applications
the transistor at the fundamental
frequency is larger than the conversion loss of the circuit.
Various types of instabilities
can occur in transistor frequencymultiplier circuits, including lowfrequency resonances, parametric
oscillations, hysteresis, and high-frequency resonances. Low-frequency
resonances occur because the gain
of the transistor is very high at low
frequency compared to that at the
operating frequency. "Hysteresis"
refers to discontinuous mode jumps
in output power when the input
power or frequency .is increased or
decreased. A tuned circuit used in
the output coupling network has a
different resonant frequency under
strong drive than under weaker driving conditions. It has been found experimentally that hysteresis effect
can be minimized, and sometimes
eliminated, by use of the commonemitter configuration.
Perhaps the most troublesome instability in transistor frequencymultiplier circuits is high-frequency
resonance. Such instability shows up
in the form of oscillations at a frequency very close to the output frequency when the input drive power
is removed. This effect suggests that
the transistor under this condition
behaves as a locked oscillator at the
fundamental frequency. Commonemitter circuits have been found to
be less critical for high-frequency
oscillatons than common-base circuits. High-frequency resonance is
also strongly related to the input
drive frequency, and can be eliminated if the input frequency is kept
below a certan value. The input frequency at which stable operation
can be obtained depends on the
method used to ground the emitter
of the transistor, and can be increased by use of the shortest possible path from the emitter to
ground.
SWITCHING
Transistors are often used in
pulse and switching circuits in
radar, television, telemetering, pulse-
15
code communication, and computing
equipment. The basic concept in any
switching circuit is a discrete change
of state, usually a voltage change or
a current change or both. This
change of state may be used to perform logical functions, as in a computer, or to transfer energy, as in
relay drivers and switching regulators.
A switch presents a high resistance when it is open and a low resistance when it is closed. When
transistors are used as switches,
they offer the dual advantages of having no moving or wearing parts and
of being easily actuated from various
electrical inputs. Transistor switching circuits act as generators, amplifiers, inverters, frequency dividers,
and wave shapers to provide limiting, triggering, gating, and signalrouting functions. These applications
are normally characterized by largesignal or nonlinear operation of the
transistor.
When a transistor switching circuit is ON, the resistance should be
as low as possible across the transistor to avoid loss of power across
the switch. To achieve this low resistance, it is necessary that the
transistor be in the saturation region. Enough base current must be
supplied to assure that saturation is
maintained under "worst-case" operating conditions. ("Worst-case"
design is essential to guarantee reliable operation of a circuit under the
most adverse conditions. Resistor,
capacitor, and voltage tolerances,
variations in transistor parameters,
temperature effects, and end-of-life
degradation are the primary factors
considered in "worst-case" design of
circuits.) In the OFF condition, the
impedance across the transistor
should be as high as possible.
In large-signal operation, the transistor acts as an overdriven amplifier
which is driven from the cutoff region
to the saturation region. In the simple transistor-switching circuit shown
in Fig. 107, the collector-base junction is reverse-biased by battery Vee
76
RCA Transistor Manual
through resistor Ro. 8witch 8, controls the polarity and amount of base
current from battery Vn, or Vn•.
When 8, is in the OFF position, the
emitter-base junction of the transistor is reverse-biased by battery Vn>
through the current-limiting resistor
c
state. (Both junctions are forwardbiased.)
Regions of operation are similar
for all transistor configurations used
as switches. When both junctions of
the transistor are reverse-biased
(cutoff condition), the output current
is very small and the output voltage
is high. When both junctions are
forward-biased (saturation condition), the output current is high and
the output voltage is small. For most
practical purposes, the small output
current in the cutoff condition and
the small output voltage in the saturated condition may be neglected.
Switch ing Times
Figure 107.
Simple switching circuit.
R•. The transistor is then in the OFF
(cutoff) state. (Normal quiescent
conditions for a transistor switch in
the cutoff region require that both
junctions be reverse-biased.)
When the switch is in the ON position, forward bias is applied to the
emitter-base junction by battery Vn,
through the current-limiting resistor
Rlo The base current and collector
current then increase rapidly until
the transistor reaches saturation.
(The transistor is saturated when
the collector current reaches a value
at which it is limited by Ra and V co.
Collector current is then approximately equal to Veo/Ra, and further
increases in base drive produce no
further increase in collect-or current.) The active linear region is
called the transition region in switching operation because the signal
passes through this region rapidly.
In the saturation region, the collector current is usually at a maximum and collector voltage at a
minimum. This value of collector
voltage is referred to as the saturation voltage, and is an important
characteristic of the transistor. A
transistor operating in the saturation region is in the ON (conducting)
When switch 8. in Fig. 107 is
operated in sequence from OFF to
ON and then back to OFF, the current pulses shown in Fig. 108 are obtained. The rectangular input current
pulse In drives the transistor from
cutoff to saturation and back to cutoff. The output current pulse Ie is
distorted because the transistor cannot respond instantaneously to a
change in signal level. The response
of the transistor during the rise time
Ze
o~~~----4-?----------
I I
I I
I I
I I
I I
I
Figure 108.
Current waveforms obtained in
switching circuit.
tr and the fall time tr is called the
transient response, and is essential1y
determined by the transistor characteristics in the active linear region.
The delay time 4 is the length of
time that the transistor remains cut
off after the input pulse is applied.
77
Transistor Applications
This finite time is required before
the applied forward bias overcomes
the emitter depletion capacitance of
the transistor and collector current
begins to flow.
The rise time tr (which is also referred to as build-up time) is the
time required for the leading edge of
the pulse to increase in amplitude
from 10 to 90 per cent of its maximum value. Rise time can be reduced
by overdriving the transistor, but
only small amounts of overdrive are
normally used because turn-off time
(storage time plus fall time) is also
affected.
The pulse time t. (or pulse duration) is the length of time that the
pulse remains at, or very near, its
maximum value. Pulse-time duration
is measured between the points on
the leading edge and on the trailing
edge where the amplitude is 90 per
cent of the maximum value.
The storage time t, is the length
of time that the output current Ie remains at its maximum value after
the input current In is reversed. The
length of storage time is essentially
governed by the degree of saturation
into which the transistor is driven
and by the amount of reverse (or
turn-off) base current supplied.
The fall time tr (or decay time) of
the pulse is the time required for the
trailing edge to decrease in amplitude from 90 to 10 per cent of its
maximum value. Fall time may be
reduced by the application of a reverse current at the end of the input
pulse.
The total tum-on time of a transistor switch is the sum of the delay
time and the rise time. The total
turn-off time is the sum of the storage time and the fall time. A reduction in either storage time or fall
time decreases turn-off time and increases the usable pulse repetition
rate of the circuit.
Triggered Circuits
When an externally applied signal
is used to cause an instantaneous
change in the operating state of a
transistor circuit, the circuit is said
to be triggered. Such circuits may
be astable, monostable, or bistable.
Astable triggered circuits have no
stable state; they operate in the
active linear region, and produce
relaxation-type oscillations. A monostable circuit has one stable state
in either of the stable regions (cutoff or saturation); an external pulse
"triggers" the transistor to the other
stable region, but the circuit then
switches back to its original stable
state after a period of time determined by the time constants of the
circuit elements. A bistable (flip-flop)
circuit has a stable state in each of
the two stable regions. The transistor is triggered from one stable state
to the other by an external pulse,
and a second trigger pulse is required to switch the circuit back to
its original stable state.
The multivibrator circuit shown in
Fig. 109 is an example of a monostable circuit. The bias network holds
Figure 109.
Monostable multivibrator.
transistor Q2 in saturation and transistor Q, at cutoff during the quiescent or steady-state period. When an
input signal is applied through the
coupling capacitor C" however, transistor Q, begins to conduct. The decreasing collector voltage of Q,
(coupled to the base of Q. through
capacitor C,) causes the base current
and collector current of Q2 to de-
78
RCA Transistor Manual
crease. The increasing collector voltage of Q. (coupled to the base of Q,
through resistor R.) then increases
the forward base current of Qh This
regeneration rapidly drives transistor Q, into saturation and transistor
Q. into cutoff. The base of transistor
Q. at this point is at a negative potential almost equal to the magnitude of the battery voltage Vee.
Capacitor C. then discharges
through resistor R. and the low saturation resistance of transistor Q,.
As the base potential of Q. becomes
slightly positive, transistor Q. again
conducts. The decreasing collector
potential of Q. is coupled to the base
of Q, and transistor Q, is driven into
cutoff, while transistor Q. becomes
saturated. This stable condition is
maintained until another pulse triggers the circuit. The duration of the
output pulse is primarily determined
by the time constant of capacitor C.
and resistor R. during discharge.
The Eccles-Jordan-type multivibrator circuit shown in Fig. 110 is an
example of a bistable circuit. The resistive and bias values of this circuit
are chosen so that the initial application of dc power causes one transistor to be cut off and the other to
be driven into saturation. Because of
the feedback arrangement, each transistor is held in its original state by
the condition of the other. The application of a positive trigger pulse to
the base of the OFF transistor or a
negative pulse to the base of the ON
transistor switches the conducting
state of the circuit. The new condition is then maintained until a second pulse triggers the circuit back to
the original condition.
In Fig. 110, two separate inputs
are shown. A trigger pulse at input
A will change the state of the circuit. An input of the same polarity at
input B or an input of opposite polarity at input A will then return the
circuit to its original state. (Collector
triggering can be accomplished in a
similar manner.) The capacitors C.
and C. are used to speed up the regenerative switching action. The output of the circuit is a unit step voltage when one trigger is applied, or
a square wave when continuous pulsing of the input is used.
Gating Circuits
A transistor switching circuit in
which the transistor operates as an
+_ .::..Vcc
+
CI
INPUT Ao1
INPUT 8 0 - 1 t - - - - - - - - - - - - - '
C2
Figure" 110.
Eccles-Jordan·type bistable multivibrator.
79
Transistor Applications
effective open or shQrt circuit is
called a "gate". These circuits are
used extensively in computer applications to provide a variety of functions such as circuit triggering at
prescribed intervals and level and
waveshape control. Because these circuits are designed to evaluate input
conditions to provide a predetermined
output, they are primarily used as
logic circuits. Logic circuits include
OR, AND, NOR (NOT-OR), NAND
(NOT-AND), series (clamping), and
shunt or inhibitor circuits.
An OR gate has more than one input, but only one output. It provides
a prescribed output condition when
one or another prescribed input condition exists. When a pulse of the
proper polarity is applied at one or
more of the inputs to an OR gate,
an output pulse of the same polarity
is obtained. If the circuit provides
phase inversion of the input signal,
the OR gate becomes a NOT-OR
(NOR) gate. Fig. 111 shows a simple NOR gate that uses diode inputs.
+Vcc
Figure 111.
Simple diode NOR gate.
Fig. 112 shows a transistor NOR
gate in which bias is provided by the
battery Vbb. The bias value is chosen
so that the transistor is cut off
when all inputs are low and is turned
on and saturated when either or both
of the inputs are high.
An AND gate also has more than
one input, but only one output. However, it provides an output only when
aU the inputs are applied simultaneously. As in the case of the OR
gate, the use of a configuration which
provides phase inversion provides a
NOT-AND (NAND) gate.
Figure 112.
Simple transistor NOR gate.
The AND-OR gate shown in Fig.
113 illustrates the use of a directcoupled transistor logic circuit to
trigger a bistable multivibrator. The
over-all gating function, which consists of a NAND function and a
NOR function, is performed by transistors Q1, Q2, and Q•. Transistor Q.
is part of the bistable multivibrator.
Transistors Q1 and Q2 are seriesconnected and form a NAND gate.
Similarly, transistors Q, and Q. are
series-connected and form a NAND
gate. Transistors Q. and Q. are parallel-connected and form a NOR gate.
Provided all transistors are cut off
(quiescent condition), triggering of
the bistable multivibrator is accomplished when the prescribed input
conditions for either of the NAND
gates are met, i.e., when either transistors Q, and Q. or transistors Q1
and Q. are triggered into conduction.
Gating circuits are also used as
amplitude discriminators (limiters),
clippers, and clamping circuits, and
as signal-shunting or transmission
gates.
Propagation delay per stage or
per pair of stages is the most important consideration in determining
the speed capabilities of a logic system for computer applications. This
delay time limits the maximum speed
with which information can be
processed in a computer. Typical
propagation delays ranging from
several microseconds to less than 10
nanoseconds can be obtained, depending upon the type of circuit and
transistor used.
The simplest computer building
RCA Transistor Manual
80
r - MULTIVlaRATOR
-------,
I
I
a
E
INPUT
A
E
INPUT
a
Figure 113.
AND-OR gate or trigger circuit.
block is the RTL (resistance-transistor-Iogic) circuit shown in Fig.
114. This circuit performs a NOR
function if positive voltage levels
are defined as binary "1" and negative voltages are defined as binary
"0". RTL circuits must be designed
so that de stability is obtained under
"worst-case" conditions. However, if
optimum switching performance is
desired, circuits are designed to provide maximum reverse base current
for a given fan-in (number of in-
puts) and fan-out (number of outputs). This approach decreases
storage and fall times and thus provides smaller propagation delays per
stage, but decreases the fan-out
capability of the circuit.
The measurement of propagation
delay in RTL circuits is made under
"worst-case" conditions, i.e., alternate stages are subjected in turn to
maximum and then minimum drive
conditions. Maximum drive produces
short delay and rise times but long
+Vcc
-Vaa
n
INPUTS
TO ADDITIONAL OUTPUTS
FigUre
114.
Simple
RTL
(resistance-transistor-Iogic)
NOR
circuit.
Transistor Applications
-Vaa
81
+vcc
+VCI
RS
Figure 115.
TO ADDITIONAL.QUTPUTS
TO ADDITIONAL INPUTS
Generalized RCTL (resistance-capacitance-transistor-Iogic) NOR
storage and fall times; it occurs
when a given stage is driven by
three unloaded stages. Minimum
drive produces short storage and fall
times but long delay and rise times;
it occurs when a given stage is
driven at only one input by a fully
loaded stage.
A generalized RCTL (resistancecapacitance-transistor-Iogic) circuit
is shown in Fig. 115. This type of
logic circuit is characterized by a
large number of transistors and is
capable of extremely fast operation.
The logic function performed by the
RCTL arrangement of Fig. 115 is the
same as that described for the RTL
system shown in Fig. 114.
The high-speed operation of RCTL
systems is a result of the use of the
"speed-up" capacitor CF • This capacitor compensates for stored charge
in the transistor, and also provides
large forward-base-current over-
-Vaa
drive on an instantaneous basis.
Therefore, extremely fast transistor
switching times can be obtained.
However, the maximum repetition
rate of the circuit is limited by the
value of CF. Therefore, CF must be
selected just large enough to compensate for the transistor stored
charge.
Fig. 116 shows a generalized DTL
(diode-transistor-logic) circuit which
performs either a NAND or a NOR
function depending upon the definition of voltage levels. The DTL circuit is characterized by extremely
high speed, a large number of diodes,
and relatively few transistors. Such
circuits may use a collector clamp
voltage, as shown, or may be designed without collector clamping
provided all input diodes are reversebiased when a transistor is to be
ON. The latter approach makes possible larger fan-in and fan-out, but
+Vcc +VCI
-Vaa
n
INPUTS
TO ADDITIONAL OUTPUTS
Figure 116.
circui~.
Generalized DTL (diode-transistor-Iogic) circuit.
RCA Transistor Manual
82
is somewhat slower in speed than
the design shown. The DTL system
is more economical than the RCTL
system because fewer transistors
are required to perform a given logic
function.
Figs. 117 and 118 show two approaches to the design of ultra-highspeed, non-saturating logic circuits.
The circuit in Fig. 117 is the generalized circuit for a current-steering system using reference diodes
and transistors; Fig. 118 shows the
generalized circuit for a complementarY-symmetrY current-steering system using only transistors.
Current-steering logic (CSL) circuits are characterized by a large
number of transistors, high power
dissipation, and ultra-high-speed
operation. The logic function performed by these circuits is. somewhat
different from those discussed previously. Because of the extra transistors involved, such circuits can
perform both a desired function
and its inverse. For example, both
NAND and AND or NOR and OR
functions are directly obtained, the
combination depending upon the definition of voltage levels.
The design of current-steering circuits must be optimized to use the
smallest load resistor RL possible because the ultimate speed of the circuit is limited by the time constant
of this load resistance and the load
capacitance. The complementarysymmetry approach is superior to
diode current steering because it is
TO
r--_ _ _ _ _ _ _ _ _ _......_.ADDITlONAL
OUTPUT
CIRCUITS
n INPUTS
~--~------~---------+~~~-<
TO
r---------------------~--.A~~t~~L
CIRCUITS
TO
ADDITIONAL
OUTPUT
CIRUITS
Figure 117. Generalized current-steering system using reference diodes and transistors.
Transistor Applications
n INPUTS
(n-p-n TRANSISTORS)
83
TO
ADDITIONAL
, . - - - - - - - - - - - - . - - p.,n-p
OUTPUT
CIRCUITS
RLI
~----~~~~~VV~~~~~
TO
n-p-n
~--------------~----~--·OUTPUT·
CIRCUITS
TO
ADOITIONAL
p-n-p
OUTPUT
CIRCUITS
Figure 118.
Generalized
circuit for complementary-symmetry
system using only transistors.
equivalent in speed, provides the
same transistor dissipation (and is
thus equally reliable), and may be
designed with less critical tolerances.
Computer operation requires the
use of many flip-flop circuits for
temporary storage of data. "Setreset" flip-flops may be formed readily by use of any of the basic logic
blocks described. A binary-countertype flip-flop is shown in Fig. 119.
The design of the flip-flop circuit
is the same as for the RCTL system
except for the trigger gating circuit
and the value of CF. The trigger gating circuit is designed so that a
negative pulse at the input turns the
ON transistor off. Therefore, the
size of the input capacitors must be
determined by the maximum stored
current-steering
charge of the transistor and the size
of the input voltage swing. The two
additional diodes connected from
base to emitter of each transistor
and the two diodes shunting the
gating resistors connected to the
collectors are used to eliminate timeconstant problems at high frequencies. These diodes may be eliminated
if high-frequency operation is not
required.
The problem of noise control in
computer systems increases in importance with the use of ultra-highspeed transistors and circuits. Noise
immunity is defined as the ability of
a given circuit to be relatively immune to a certain amplitude and
duration of noise voltage. In computer circuits, there are essentially
three sources of noise: (1) capaci-
84
RCA Transistor Manual
+VCC
RC
RC
Vss
~UT
Figure 119.
Binary-counter-type flip-flop circuit.
tive cross-coupling, (2) inductive
cross-coupling, and (3) coupling
through common impedances. The inductive noise component is generally
the most significant in transistor
circuits because relatively low voltages and high currents are present.
To optimize a switching design for
noise immunity, it is necessary to
determine what noise-voltage amplitude at the input is required to
cause a change at the output. Because this amplitude is a function
of the transient response of the
switching circuit, the pulse width or
duration of the noise voltage must
also be considered. In the following
discussion, it is assumed that the
noise voltage is of sufficient duration
that effects of the circuit transient
response may be neglected (i.e., that
the noise-voltage duration is no less
than the longest turn-on or turn-off
time of the switching circuit).
The DTL circuit shown in Fig. 116
can be used to illustrate the design
of a logic circuit for noise immunity.
When all inputs are high, a negative
noise pulse at any input tends to
turn the ON transistor off; a positive noise pulse has no effect. The
amplitude of noise required to effect a change is determined by the
reverse bias V R on the input diodes,
the amount of forward bias VF necessary to cause appreciable conduction of an input diode, and the
stored charge Q. of the ON transistor. For the ON condition, therefore,
the negative noise-voltage amplitude
required to cause a change in the
output is given by
When anyone of the inputs is low
and the transistor is OFF, only a
positive noise pulse at a low input
has any effect on the transistor output. The amplitude of the positive
noise voltage required to start the
transistor turning ON is determined
by the amount of reverse bias VB
on the base-to-emitter junction of
the transistor, the forward bias VBE
required across the base-to-emitter
junction to cause appreciable conduction of base current, and the
amount of charge necessary to
charge the input capacitance C, at
the base through the voltage VB
VBE • For the OFF condition, there-
+
Transistor Applications
85
fore, the positive noise-voltage amplitude required is given by
Vo = (VB
+
Vn) (1
C,
+ CF)
A per-cent noise-immunity figure
can be defined for a particular circuit as the ratio of the noise voltages determined above to the normal
voltage swing of a true input, which
is approximately equal to the collector supply voltage. It is desirable
to have equal noise immunity for
both the ON and OFF conditions because the per-cent noise-immunity
figure for the circuit is no better
than the lower value.
Because the values V F, V Bm, Q., CF,
and C'. are constants for a specific
transistor and diode, the values of
VB and VB may be chosen to obtain
a desired noise immunity for a given
circuit design. However, circuit noise
immunity and fan-out capability are
interdependent; if noise immunity is
made too large; fan-out capability
will suffer. Therefore, a compromise
between the two must be made.
Power Switching
Because of their efficiency and reliability, transistor switches are
ideally suited to the control of large
amounts of power. However, the efficiency of a power switching circuit
is affected by the switching speed of
the transistor. In some applications
a faster transistor that has a low
power rating may be preferred to
a slower transistor that has a higher
power rating.
In a practical switching circuit,
the average power dissipated in the
transistor is much less than the
peak dissipation. The peak dissipation varies considerably with the
type of load. The average power
dissipation can be reduced, and thus
the efficiency of the circuit can be
increased, by use of a transistor that
has fast switching characteristics
(minimum turn-on time and turnoff time), low collector-to-emitter
saturation voltage Vem(sat), and low
collector-cutoff current lOBo.
An analysis of the transistor load
line is an important consideration
in achieving reliability in a highpower switch. In general, the load
is a combination of resistive and reactive elements. It is almost never
purely resistive, and for "worstcase" analysis can be assumed to
be completely inductive.
Fig. 120 shows a simple test circuit which can be used for analysis
HORIZONTAL
=Simple test circuit for analysis
Figure 120.
of a load line.
of a load line. The current-sensing
resistor R in the collector circuit
should be non-inductive and have a
resistance much smaller than any
other impedance in series with the
transistor. A typical load line (collector current Ie as a function of
collector-to-emitter voltage Vo .. ) for
this circuit is shown in Fig. 121. Fig.
IVeEl( (ns)
I
I
ON
TURN OFF\
I
\TURN ON
OFF
I
' ... JBVeEX
-~---
VCC
COLLECTOR-TO-EMITTER VOLTAGE (VCE)
Figure 121. Typical load line for circuit
shown in Figure 120.
122 shows typical voltage and current curves as a function of time
for this switch. The curves of Figs.
121 and 122 can be used for calculation of the peak and average power
dissipation, voltage limitations, and
second-breakdown energy. The turnoff energy of the switch must not
86
RCA Transistor Manual
ffi
~
u
I
oI
U
rp
CBO
--
""'=:===T---t=-r--.....-'I=
toff
TIME It)
Figure 122. Typical voltage and current
waveforms for switch shown in Figure 120.
exceed the second-breakdown voltage rating for the transistor used.
In many cases, the dc voltage required to operate electronic equip-
ment is different from the available
dc supply. The circuit used to convert direct current from one level
to another is called a converter. Fig.
123 shows two simple converter circuits which can be used in place of
the conventional vibrator-type converter in automobile radios. The
switching drive to the two transistors is supplied by a separate, small,
saturable transformer in the circuit
of Fig. 123a, and by an additional
center-tapped drive winding on a
single saturable transformer in Fig.
123b. The characteristic hysteresis
loop of the auto-transformer used
in the circuit of Fig. 123b is shown
in Fig. 124. Transformer parameters
such as frequency, number of turns,
and size and type of core material
are determined by the operating requirements for the circuit. Once the
transformer has been established, a
change in supply voltage results in
a change in the operating frequency.
Switching is accomplished as a result of the saturation of the transformer. When the slope of the
hysteresis loop shown in Fig. 124
is small, the magnetizing inductance
is small and the magnetizing current
,. SATURABLE CORE
(0)
,. SATURABLE CORE
Ib)
Figure 123.
Simple converter circuits that can be used in place of vibrator-type
converters in automobile radios.
87
Transistor Applications
increases rapidly. This situation exists as the loop is traversed in a
counter-clockwise manner from point
1 to point 2. From point 2 to point
3, the magnetizing current increases
ample, the collector-to-emitter sustaining voltage under reverse-bias
conditions, VCEV(SUS), is given by
B
where Vcc is the collector-supply
voltage and 6. Vcc is the magnitude
of the supply variations or "spikes".
The second-breakdown voltage limit
Es/ B for the transistor is given by
4
VCEV(SUS)
Es/ B
----t--t---f----H
~
~
2Vcc
+
6.Vcc
¥.a (.aIn)"LI
where fJ is the common-emitter forward transfer-current ratio, In is the
base current, and L1 is the total
series inductance of the transformer
and the load reflected to the input.
~
SATURATION
I
I
8
Figure 124. Characteristic hysteresis loop
of auto-transformer used in circuit of
Figure 123b.
very slowly because the magnetizing inductance is high. At point 3,
the core is in saturation, and the
magnetizing current again increases
rapidly. As the current continues to
increase (between points 3 and 4),
the ON transistor comes out of saturation. When point 4 has been
reached, the voltages across the primary windings of the transformer
have dropped to zero, and the battery voltage is applied across the
collector-to-emitter
terminals
of
each transistor. The magnetizing
current then begins to decay, and
voltages of opposite polarity are induced across the transformer. At
point 5, the magnetizing current has
been reduced to zero, the second
transistor is in saturation, and the
first transistor has twice the battery voltage across its emitter-tocollector junction. This sequence of
events is repeated during each halfcycle of the operation of the circuit,
except for a reversal of polarity.
The approximate load line of the
converter circuit of Fig. 123b is
shown in Fig. 125. Many of the important transistor ratings can be
determined from this curve. For ex-
~
o
III
::i
o
o
Vcc
2Vcc
COLLECTOR-TO-EMITTER VOLTAGE
Figure 125. Approximate load line for
converter circuit shown in Figure 123b.
As mentioned previously, the collector-to-emitter saturation voltage
VCE(sat) of the transistor should be
low.
The change in frequency of operation of a converter with supply voltage is not usually important because
the ac voltage is rectified and filtered. In an inverter circuit, however, the frequency may be very
important and is generally controlled
by adjustment of the supply voltage. Typically, the dc supply voltage
is controlled by means of a voltage
regulator inserted ahead of the converter to stabilize the input voltage
and a power amplifier following the
converter to isolate the converter
from the effects of a varying load.
Fig. 126 shows a block diagram
88
. RCA Transistor Manual
FEEDBACK
LOAD
Figure 126.
Block.' diagram of typical
inverter circuit.
=
of a typical dnverter circuit. The
output frequency is directly dependent on the induced voltage of the
converter transformer. The feedback
shown samples this induced voltage
and adjusts the output of the voltage
regulator to maintain a constant induced voltage in the converter and
thus a constant output frequency.
If a regulated output voltage is not
required, the second voltage regulator is omitted.
In the operation of a regulator
circuit, the difference between a reference input (e.g., the supply voltage) and some portion of the output
voltage (e.g., a feedback signal) is
used to supply an actuating error
signal to the control elements. The
amplified error signal is applied in
a manner that tends to reduce this
difference to zero. Regulators are designed to provide a constant output
voltage very nearly equal to the desired value in the presence of varying input voltage and output load.
A switching regulator provides at
least three major. advantages over
conventional series-type regulators:
(1) higher efficiency (lower power
dissipation, smaller physical size);
(2) use of fewer, more economical
transistors; (3) higher power-output
'Capabilities.: In the typical switching
regulator shown in Fig. 127, the
series regulator transistor is pulseduration modulated by the signal
supplied from the multivibrator. The
ON time of the multivibrator is in
turn controlled by a de comparison
between a reference voltage developed across the zener diode D,
and the output. The pulsed output
_ from the series transistor is integrated by the low-pass filter. When
the transistor is conducting, current
is delivered to the load from the input source. In the OFF condition,
diode D2 conducts and the energy
stored in the reactive elements supplies current to the load.
When a step-down regulator is required (e.g., 100 volts down to 28
volts), the efficiency of a switching
regulator is considerably higher
than that of a conventional series
regulator. If very precise regulation
is required, the switching regulator
can be used as a pre-regulator followed by a conventional regulator
circuit; this configuration optimizes
the advantages of both types of
regulators. Over-all efficiency for
such a combination circuit is typically about 80 to 85 per cent, as
compared to values of 25 to 30 per
cent for a conventional series-type
step-down regulator. In addition,
total power dissipation is reduced
from several hundreds of watts to
less than 50 watts.
RL
Figure 127.
Typical switching regulator.
Vo(32V)
89
MOS Field-Effect
Transistors
transistors combine
F ield-effect
the inherent advantages of solidstate devices (small size, low power
consumption, and mechanical ruggedness) with a very high input
impedance and a square-law transfer characteristic that is especially
desirable for low cross-modulation
in rf amplifiers. Unlike the other
transistors described in this Manual
which are bipolar devices (i.e., per~
formance depends on the interaction
of two types of charge carriers,
holes and electrons), field-effect
',transistors are unipolar devices (Le.,
operation is basically a function of
only one type of charge carrier, holes
in p-channel devices and electrons in
n-channel devices).
Early models of field-effect transistors used a reverse-biased semiconductor junction for the control
electrode. In MOS (metal-oxidesemiconductor) field-effect transistors, a metal control "gate" is separated from the semiconductor "channel" by an inSUlating oxide layer.
One of the major features of the
metal-oxide-semiconductor structure
is that the very high input resistance of MOS transistors (unlike
that of junction-gate-type field-effect
transistors) is not affected by the
polarity of the bias on the control
(gate) electrode. In addition, the
leakage currents associated with the
insulated control electrode are relatively unaffected by changes in ambient temperature. Because of their
unique properties, MOS field-effect
transistors are particularly well
suited for use in such applications
as voltage amplifiers, rf amplifiers,
and voltage-controlled attenuators.
THEORY OF OPERATION
The operation of field-effect devices can be explained in terms of a
charge-control concept. The metal
control electrode, which is called a
gate, acts as a charge-storage or
control element. A charge placed on
the gate induces an equal but opposite charge in the semiconductor
layer, or channel, located beneath
the gate. The charge induced in the
channel can then be used to control
the conduction between two ohmic
contacts, called the source and the
drain, made to opposite ends of the
channel.
In the junction-gate type of fieldeffect transistor, a p-n junction is
used for the gate or control electrode, as shown in Fig. 128. When
this junction is reverse-biased, it
functions as a charge-control electrode. Under steady-state condiGATE
Figure 128. structure of p-n junction
field-effect transistor.
RCA Transistor Manual
90
tions, only leakage currents flow in
the gate circuit and thus the device
has a high input resistance. When
the junction gate is forward-biased,
however, the input resistance drops
sharply, there is appreciable input
current, and power gain decreases
significantly.
The MOS type of field-effect transistor uses a metal gate electrode
separated from the semiconductor
material by an insulator, as shown
in Fig. 129. Like the p-n junction,
this insulated-gate electrode can deplete the source-to-drain channel of
active· carriers when suitable bias
voltages are applied. However, the
insulated-gate electrode can also increase the conductivity of the channel without increasing steady-state
input current or reducing power
gain.
Figure 129. structure of an MaS
field-effect transistor.
The two basic types of MOS fieldeffect transistors are the depletion
type and the enhancement type. In
the depletion type, charge carriers
are present in the channel when no
bias voltage is applied to the gate.
A reverse gate voltage is one which
depletes this charge and thereby reduces the channel conductivity. A
forward gate voltage draws more
charge carriers into the channel and
thus increases the channel conductivity. In the enhancement type, the
gate must be forward-biased to produce active carriers and permit conduction through the channel. No
useful channel conductivity exists at
either zero or reverse gate bias.
Because MOS transistors can be
made to utilize either electron conduction (n-channel) or hole conduction. (p-channel), four distinct types
of MOS field-effect transistors are
possible. As shown in Fig. 130, the
N-CHANNEL
DEPLETION TYPE
N-CHANNEL
ENHANCEMENT TYPE
P-CHANNEL
DEPLETION TYPE
P-CHANNEL
ENHANCEMENT TYPE
Figure 130. Schematic symbols for MaS
transistors (G
gate, D
drain,
B
active bulk, S = source).
=
=
=
schematic symbol for an MOS transistor indicates whether it is n-channel or p-channel, depletion-type or
enhancement-type. The direction of
the arrowhead in the symbol identifies the n-channel device (arrow
pointing toward the channel) or the
p-channel device (arrow pointing
away from the channel). The channel line itself is made solid to identify the "normally ON" depletiontype, or is interrupted to identify
the "normally OFF" enhancement
type.
Fig. 131 shows a cross-section
view of an n-channel enhancementtype MOS transistor (reversal of
n-type and p-type regions would produce a p-channel enhancement-type
transistor). This type of transistor
is normally non-conducting until a
sufficient voltage of the correct
Figure 131. Structure of n-channel
enhancement-type MaS transistor.
MOS Field-Effect Transistors
polarity is applied to the gate electrode. When a positive bias voltage
is applied to the gate of an n-channel
enhancement transistor, electrons
are drawn into the channel region
beneath the gate. If sufficient voltage is applied, this channel region
changes from p-type to n-type and
provides a conduction path between
the n-type source and the n-type
drain regions. (In a p-channel enhancement transistor, the application of negative bias voltage draws
holes into the region below the gate
so that this channel region changes
from n-type to p-type and again
provides a source-to-drain conduction path.) Effectively, the increase
in gate voltage causes the forward
transfer characteristic to shift along
the gate-voltage axis. Because of
this feature, enhancement-type MOS
transistors are particularly suitable
for switching applications.
In a depletion-type MOS transistor, the channel region between the
source and the drain is made of
material of the same conductivity
type as both the source and drain,
as was shown in Fig. 129. This
structure can provide substantial
drain current even when no gate
bias voltage is applied.
In enhancement-type transistors,
the gate electrode must cover the
entire region between the source
and the drain so that the applied
gate voltage can induce a conductive channel between them. In depletion-type transistors, however,
the gate can be "offset" from the
drain region to achieve a substantial reduction in feedback capacitance and an over-all improvement
in amplifier circuit stability.
FABRICATION
The fabrication techniques used to
produce MOS transistors are similar
to those used for modern high-speed
silicon bipolar transistors. The starting material for an n-channel transistor is a lightly doped p-type
silicon wafer. (Reversal of p-type
and n-type materials referred to in
91
this description produces a p-channel transistor.) Mter the wafer is
polished on one side and oxidized in
a furnace, photolithographic techniques are used to etch away the
oxide coating and expose bare silicon in the source and drain regions.
The source and drain regions are
then formed by diffusion in a furnace
containing an n-type impurity (such
as phosphorus). If the transistor is
to be an enhancement-type device,
no channel diffusion is required. If
a depletion-type transistor is desired, an n-type channel is formed
to bridge the space between the diffused source and drain.
The wafer is then oxidized again
to cover the bare silicon regions,
and a second photolithographic and
etching step is performed to remove
the oxide in the contact regions.
After metal is evaporated over the
entire wafer, another photolithographic and etching step removes all
metal not needed for the ohmic contacts to the source, drain, and gate.
The individual transistor chips are
then mechanically separated and
mounted on individual headers, connector wires are bonded to the metalized regions, and each unit is hermetically sealed in its case in an
inert atmosphere. Mter testing, the
external leads of each device are
physically shorted together to prevent electrostatic damage to the
gate insulation during branding and
shipping.
ELECTRICAL
CHARACTERISTICS
The basic current-voltage relationship for a depletion-type MOS
transistor operating in the commonsource configuration is shown in Fig.
132. At low drain-to-source potentials and with the gate returned to
the source (VG
0), the resistance
of the channel is essentially constant
and current varies linearly with
voltage, as illustrated in region
A-B. As the drain current is increased beyond point B, the voltage
(IR) drop in the channel produces
a progressively greater voltage dif-
=
RCA Transistor Manual
92
ference between the gate and points
in the channel successively closer to
the drain. As this potential difference between gate and channel increases, the channel is depleted of
carriers (becomes "constricted")
I - - - PINCH-OFF REGION
I
I
100
----+-----I
I
B
C
D
cutoff voltage VG(off) that reduces
the drain current to one per cent of
its zero-gate-voltage value at a specified drain-to-source voltage (which
must be the "knee" voltage, point
B in Fig. 132, of the zero-gate-voltage output characteristic).
The pinch-off region between
points Band D in Fig. 132 is the
region in which MOS transistors are
especially useful as high-impedance
voltage amplifiers. In the ohmic region between points A and B, the
linear variation in channel resistance makes the device useful in
voltage-controlled resistor applications such as the chopper unit at
the input of some dc amplifiers.
T y pic a 1 output-characteristic
curves for n-channel MOS transistors are shown in Fig. 133. (For p-
DRAIN VOLTAGE
ENHANCEMENT
TYPE
Figure 132. Basic current-voltage relationship for a depletion-type MOS transistor.
and drain current increases much
more slowly with further increases
in drain-to-source voltage, as shown
in region B-C. Further increases in
drain-to-source voltage beyond point
C produce no change in gate current
until point D is reached. This condition leads to the description of region B-D as the "pinch-off" region.
Beyond point D, the transistor enters the "breakdown" region, and
the drain current may increase excessively. (The upper curve in Fig.
132 also applies to enhancementtype transistors provided the gate
voltage VG is large enough to produce channel conduction.)
The channel of an MOS transistor
may achieve self pinch-off as a result of the intrinsic IR drop alone,
or it may be pinched off by a combination of intrinsic IR drop and an
external voltage applied to the gate,
or by an external gate voltage alone
which has the same magnitude as
the self pinch-off IR drop Vp. In
any case, channel pinch-off occurs
when the sum of the intrinsic IR
drop and the extrinsic gate voltage
reaches Vp. The pineh-ott voltage
Vp is usually defined as the gate
...
Z
IIJ
II:
II:
::>
o
z
o
o
_ _ _ _- - 1
z
o
:::l
o
~
z
~
LOCKNUT~
10-32
Figure 156. Suggested mounting arrangement for power transistors.
should be drilled or punched to provide both the two mounting holes
and the clearance holes for the collector, emitter, and base pins. Burrs
should be removed from both the
insulator and the holes in the chassis
so that the insulating layer will not
be destroyed during mounting. It is
also recommended that a fiber
washer be used between the mounting bolt and the chassis, as shown
in Fig. 156, to prevent a short circuit between them.
For large power transistors such
as the 2N2876 which use a doubleended stud package, connection to
the chassis or heat sink should be
made at the flat surface of the transistor perpendicular to the threaded
stud. A large mating surface should
be provided to avoid hot spots and
high thermal drop. The hole for the
stud should be only as large as necessary for clearance, and should contain no burrs or ridges on its perimeter. As mentioned above, the use of
a silicon grease between the heat
sink and the transistor improves
thermal contact. The transistor can
be screwed directly into the heat
sink or can be fastened by means of
a nut. In either case, care must be
taken to avoid the application of too
much torque lest the transistor semiconductor junction be damaged. AIthQugh the studs are made of relatively soft copper to provide high
thermal conductivity, the threads
Transistor Mounting, Testing, and Reliability
should not be relied upon to provide
a mating surface. The actual heat
transfer must take place on the
underside of the hexagonal part of
the package.
Mounting hardware is supplied
with many RCA semiconductor devices. A listing of such hardware is
included at the end of the Outlines
section.
The use of an external resistance
in the emitter or collector circuit of
a transistor is an effective deterrent
to damage which might be caused
by thermal runaway. The minimum
value of this resistance for low-level
stages may be obtained from the
following equation:
R""n =
(
4 Po
+ 25)
K
where E is the dc collector supply
voltage in volts, Po is the product of
the collector-to-emitter voltage and
the collector current at the desired
operating point in watts, and K is
the thermal resistance of the transistor and heat sink in degrees centigrade per watt.
SHIELDING
In high-frequency stages having
high gain, undesired feedback may
occur and produce harmful effects on
circuit performance unless shielding
is used. The output circuit of each
stage is usually shielded from the
input of the stage, and each highfrequency stage is usually shielded
from other high-frequency stages. It
is also desirable to shield separately
each unit of -the high-frequency
stages. For example, each if and rf
coil in a superheterodyne receiver
may be mounted in a separate shield
can. Baffle plates may be mounted
on the ganged tuning capacitor to
shield each section of the capacitor
from the other section.
The shielding precautions required
in a circuit depend on the design of
the circuit and the layout of the
109
parts. When the metal case of a
transistor is grounded at the socket
terminal, the grounding connection
should be as short as possible to minimize lead inductance. Many transistors have a separate lead connected
to the case and used as a ground
lead; where present, these leads are
indicated in the outline diagrams.
HIGH-FREQUENCY
CONSIDERATIONS
At frequencies of 100 megacycles
per second or more, the effects of
stray capacitances and inductances,
ground paths, and feedback coupling
have a pronounced effect on the gain
and power-output capabilities of
transistors. As a result, physical aspects such as layout, type of chassis,
shielding, and heat-sink consider~
tions are important in the design of
high-frequency amplifiers and oscillators.
In general, high-frequency circuits
are constructed on material such as
brass or aluminum which is either
silver-plated or machined to increase
conductivity. The input and output
circuits are "compartmentalized" by
use of a milling operation. Copperclad laminated or printed circuit
boards facilitate soldering operations, and have been used satisfactorily at frequencies up to 400
megacycles per second when the entire copper surface was kept intact
and used for the ground plane.
Because even a short lead provides a large impedance at high frequencies, it is necessary to keep all
high-frequency leads as short as possible. This precaution is especially
important for ground connections
and for all connections to bypass capacitors and high-frequency filter
capacitors. It is recommended that
a common ground return be used for
each stage, and that short, direct
connections be made to the common
ground point .. The emitter lead especially should be kept as short as
possible.
In many cases, problems of oscil-
110
lation and regenerative feedback are
caused by unwanted ground currents
(i.e., ground-circuit feedback currents). An effective solution is to
isolate the ac signal path from the
dc path so that the signal does not
pass through the power supply by
way of the power leads. In a multistage amplifier, the power leads
should enter the circuit at the highest power stage to minimize the
amount of signal on the common
power path. Lower-frequency oscillations can be minimized by use of
a large capacitor across the powersupply terminals. High-quality feedthrough capacitors should also be
used as the· power-lead connections.
Particular care should be taken
with the lead dress of the input and
output circuits of high-frequency
stages so that the possibility of stray
coupling is minimized. Unshielded
RCA Transistor Manual
leads connected to shielded components should be dressed close to the
chassis. (In high-gain audio amplifiers, these same precautions should
be taken to minimize the possibility
of self-oscillation.)
FILTERS
Feedback effects may occur in radio or television receivers as a result
of coupling between stages through
common voltage-supply circuits. Filters find an important use in minimizing such effects. They should be
placed in voltage-supply leads to
each transistor to provide isolation
between stages.
Capacitors used in transistor rf
circuits, particularly at high frequencies, should be mica or ceramic. For
audio bypassing, electrolytic capacitors are required.
111
Interpretation of Data
technical data for RCA tranTHE
sistors given in the following section include ratings, characteristics,
typical operation values, and characteristic curves. Unless otherwise
specified, voltages and currents are
dc values, and values are obtained
at an ambient temperature of 25°C.
Ratings are established for semiconductor devices to help equipment
designers utilize the performance
and service capabilities of each type
to the best advantage. These ratings
are based on careful study and extensive testing, and indicate limits
within which the specified characteristics must be maintained to ensure
satisfactory performance. The maximum ratings given for the semiconductor devices included in this
Manual are based on the Absolute
Maximum system. This system has
been defined by the Joint Electron Device Engineering Council (JEDEC)
and standardized by the National
Electrical Manufacturers Association
(NEMA) and the Electronic Industries Association (EIA).
Absolute-maximum ratings are
limiting values of operating and environmental conditions which should
not be exceeded by any device of a
specified type under any condition of
operation. Effective use of these
ratings requires close control of
supply-voltage variations, component
variations, equipment-control adjustment, load variations, signal variations, and environmental conditions.
Electrode voltage and current ratings for transistors are in general
self-explanatory, but a brief explanation of some ratings will aid in the
understanding and interpretation of
transistor data.
Voltage ratings are established
with reference to a specified electrode (e.g., collector-to-emitter voltage), and indicate the maximum
potential which can be placed across
the two given electrodes before crystal breakdown occurs. These ratings
may be specified with the third electrode open, or with specific bias voltages or external resistances.
Transistor dissipation is the power
dissipated in the form of heat by the
collector. It is the difference between
the power supplied to the collector
and the power delivered by the transistor to the load. Because of the
sensitivity of semiconductor materials to variations in thermal conditions, maximum dissipation ratings
are usually given for specific temperature conditions.
For many types, the maximum
value of transistor dissipation is specified for ambient, case, or mountingflange temperatures up to 25 degrees
centigrade, and must be reduced
linearly for higher temperatures. For
such types, Fig. 157 can be used to
determine maximum permissible dissipation values at particular temperature conditions above 25 degrees
centigrade. (This figure cannot be
assumed to apply to types other than
those for which it is specified in the
data section.) The curves show the
permissible percentage of the maximum dissipation ratings as a function of ambient or case temperature.
Individual curves are plotted for
maximum operating temperatures of
50, 55, 71, 80, 85, 100, 125, 175, and
200 degrees centigrade. If the maximum operating temperature of a
transistor type is some other value,
a new curve can be drawn from
point A in the figure to the desired
temperature value on the abscissa.
RCA Transistor Manual
112
TEMPERATURE _·c
Figure 157. Chart showing maximum permissible percentage of maximum rated
dissipation as a function of temperature.
To use the chart, it is necessary to
know the maximum dissipation rating and the maximum operating temperature for a given transistor. The
calculation involves only two steps:
1. A vertical line is drawn at the
desired operating temperature value
on the abscissa to. intersect the curve
representing the maximum operating
temperature for the transistor.
2. A horizontal line drawn from
this intersection point to the ordinate establishes the permissible percentage of the maximum dissipation
at the given temperature.
The following example illustrates
the calculation of the maximum permissible dissipation for transistor
type 2N1490 at a case temperature
of 100 degrees centigrade. This type
has a maximum dissipation rating of
75 watts at a case temperature of 25
degrees centigrade, and a maximum
permissible case-temperature rating
of 200 degrees centigrade.
1. A perpendicular line is drawn
from the lOO-degree point on the
abscissa to the 200-degree curve.
2. Projection of this point to the
ordinate shows a percentage of 57.5.
Therefore, the maximum permis~
sible dissipation for the 2Nl490 at
a case temperature of 100 degrees
centigrade is 0.575 times 75, or approximately 43 watts.
Semiconductor devices require
close control of thermal variations
not only during operation, but also
during storage. For this reason, the
maximum ratings for transistors
usually include a maximum permissible storage temperature, as well as
a maximum operating temperature.
Characteristics are covered in the
Transistor Characteristics section,
and such data should be interpreted
in accordance with the definitions
given in that section. Characteristic
curves represent the characteristics
of an average transistor. Individual
transistors, like any manufactured
product, may have characteristics
that range above or below the values
given in the characteristic curves.
Although some curves are extended
beyond the maximum ratings of the
transistor, this extension has been
made only for convenience in calculations; no transistor should be operated outside of its maximum ratings.
113
Transistor Symbols
transistor symbols have
Although
not yet been standardized
throughout the industry, many symbols have become fairly well established by common usage. The
transistor symbols used in this
Manual are listed and defined in this
section.
Co
ClbO
Cle.
CObO
GENERAL SEMICONDUCTOR
SYMBOLS
td
td +tr
t,
t.
tr
t.
t. + t,
T
TS
duty factor
efficiency (eta)
noise figure
temperature
ambient temperature
case temperature
junction temperature
mounting-flange temperature
storage temperature
thermal resistance
thermal resistance, junction-to-ambient
thermal resistance, junction-to-case
thermal resistance, junction-to-mounting-flange
delay time
turn-on time
fall time
pulse time
rise time
storage time
turn-off time
time constant (tau)
saturation stored-charge
time constant
TRANSISTOR SYMBOLS
Cb'.
collector-to-base fee dback capacitance
Coeo
f. t •
collector-to-case capacitance
collector-to-base fee d back capacitance
input capacitance, open
circuit (common base)
input capacitance, open
circuit (common emitter)
output capacitance, open
circuit (common base)
output capacitance, open
circuit (common emitter)
second-breakdown energy
cutoff frequency
small-signal for war dcur r e n t transfer-ratio
cutoff frequency, shortcircuit (common base)
small-signal for war dcurrent transfer-r a t i 0
cutoff frequency, shortcircuit (common emitter)
gain-bandwidth product
(frequency at w h i c h
small-signal for war dcurrent transfer ratio,
common emitter, extrapolates to unity)
s mall-signal transconductance (common emitter)
I a r g e - signal average
power gain (common
base)
sma II - signal average
power gain (common
base)
I a r g e - signal average
power gain (common
emitter)
sma II - signal average
power gain (common
emitter)
s tat i c forward-current
transfer ratio (common
base)
114
h,.
h 'b
hIlIl
hOb
hoe
hrb
h re
Is
Is1
182
Ie
io
leB
leBo
101,0
leER
10ES
leEv
10El[
RCA Transistor Manual
small-signal for war dcurrent transfer ratio,
short circuit (common
base)
s tat i c forward-current
transfer ratio (common
emitter)
small-signal for war dcurrent transfer ratio,
short circuit ( common
emitter)
small-signal input impedance, short circuit
(common base)
static input resistance
(common emitter)
small-signal input impedance, short circuit
(common emitter)
small-signal output impedance, open circuit
(common base)
small-signal output impedance, open circuit
(common emitter)
small-signal rever s e voltage transfer ratio,
open circuit (common
base)
small-signal rever s e voltage transfer ratio,
open circuit (common
emitter)
base current
turn-on current
turn-off current
collector current
collector current, instantaneous value
collector-cutoff current
collector-cutoff current,
emitter. open
collector-cutoff current,
base open
collector-cutoff current,
specified resistance between base and emitter
collector-cutoff current,
base short-circuited to
emitter
collector-cutoff current,
specified voltage between base and emitter
collector-cutoff current,
specified circuit between
base and emitter
los
MAG
MAG.
MUG
PCB
PCB
PCE
P
PEB
P 1B
P'b
PIE
P'e
POB
POb
POE
Poe
Q.
switching current (at
minimum h ..E per specification)
emitter current
emitter-cutoff
current,
collector open
second-breakdown collector current
maximum available amplifier gain
maximum available conversion gain
maximum usable amplifier gain
total dc or average power
input to base (common
emitter)
total instantaneous power
input to base (common
emitter)
total dc or average power
input to collector (common base)
total instantaneous power
input to collector (common base)
total dc or average power
input to collector (common emitter)
total instantaneous power
input to collector (common emitter)
total dc or average power
input to emitter (common base)
total instantaneous power
input to emitter (common base)
large-signal input power
(common base)
small-signal input power
(common base)
large-signal input power
( common emitter)
small-signal input power
( common emitter)
large-signal output power
(common base)
small-signal output power
(common base)
large-signal output power
(common emitter)
small-signal output power
(common emitter)
stored base charge
Transistor Symbols
rem (sat)
Re(h •• )
RG
R ••
R.
VUB
VBe
VBm
V(BR)CBO
V(BR)CEO
V(BR)OER
V(BR)em.
VeB
VOB(fl)
Vem(fl)
VOBO
VeBV
Veo
VOE
collector-to-emitter saturation resistance
real part of small-signal
input impedance, short
circuit (common emitter)
generator resistance
input resistance (common emitter)
load resistance
output resistance (common emitter)
source resistance
base-supply voltage
base-to-collector voltage
base-to-emitter voltage
collector-to-base breakdown voltage, emitter
open
collector - to - emitter
breakdown voltage, base
open
collector - to - emitter
breakdown voltage, specified resistance between
base and emitter
collector - to - emitter
breakdown voltage, base
short-circuited to emitter
collector - to - emitter
breakdown voltage, specified voltage between
base and emitter
emitter-to-base breakdown voltage, collector
open
collector-to-base voltage
dc open-circuit voltage
between collector and
base (floating potential),
emitter biased with respect to base
dc open-circuit voltage
between collector and
emitter (floating potential), base biased with
respect to emitter
collector-to-base voltage
(emitter open)
collector-to-base voltage,
specified voltage between
emitter and base
collector-supply voltage
collector-to-emitter voltage
115
Vomo
VeER
VeES
VCEV
VmDo
Yle
Yo.
Y ••
collector-to-emitter voltage, base open
collector-to-emitter voltage, specified resistance
between base and emitter
collector-to-emitter voltage, base short-circuited
to emitter
collector-to-emitter voltage, specified voltage between base and emitter
collector-to-emitter saturation voltage
emitter-to-base voltage
dc open-circuit voltage
between emitter and base
(floating potential), collector biased with respect
to base
emitter-to-base voltage,
collector open
emitter-supply voltage
reach-through voltage
forward transconductance
input admittance
output admittance
reverse transconductance
MOS FIELD·EFFECT
TRANSISTOR SYMBOLS
A
v 0 I tag e amplification
(= Y.. /Yo.
BOil
c.
Cd.
Cgd
Cg.
C...
Cra.
g..
+ YL)
= Cds
intrinsic channel capacitance
drain-to-source capac~
tance (includes approxImately l-pF drain-tocase and interlead capacitance)
gate-to-drain capacitance
(includes O.l-pF interlead capacitance)
gate-to-source interlead
and case capacitance
small-signal input capacitance, short circuit
small-signal rever s e
t ran s fer capacitance,
short circuit
forward
transconductance
116
g"
go.
Iv
Ins(OFF)
IGSS
NF
r.
rDs(ON)
RCA Transistor Manual
input conductance
output conductance
dc drain current
drain-to-source OFF current
gate leakage current
spot noise figure (generator resistance RG =
1 megohm)
effective gate seri,es resistance
active channel resistance
unmodulated channel resistance
drain-to-source ON resistance
gate-to-drain leakage resistance
gate-to-source
leakage
resistance
VDB
drain-to-substrate voltage
V DS
drain-to-source voltage
V GB
dc gate-to-substrate voltage
VGB
peak
gate-to-substrate
voltage
V GS
dc gate-to-source voltage
VGS
peak gate-to-source voltage
VGs(OFF) gate-to-source cut 0 f f
voltage
y"
for war d transadmittance = g"
Yo,
output admittance
go.
YL
+
Bo, =
jBo"
load admittance
=
WCd.
gL
+
jBL
RCA Military-Specification
Transistors
TYPE
JAN-2N174
JAN-2N220
JAN-2N274
JAN-2N384
JAN-2N388
JAN-2N396A
JAN-2N398
JAN-2N404
JAN-2N706
JAN-2N962
JAN-2N964
JAN-2N1183
JAN-2N1183A
JAN-2N1183B
JAN-2N1184
JAN-2N1184A
JAN-2N1184B
JAN-2N1224
JAN-2N1225
JAN-2N1302
JAN-2N1303
JAN-2N1304
JAN-2N1305
JAN-2N1306
JAN-2N1307
MIL-S-195001
13B
1
26 (Sig C)
27D
65A
64C
174 (Navy)
20B
120A
258 (Navy)
258 (Navy)
143A (EL)
143A (EL)
143A (EL)
143A (EL)
143A (EL)
143A (EL)
189 (Sig C)
189 (Sig C)
126B
126B
126B
126B
126B
126B
TYPE
JAN-2N1308
JAN-2N1309
JAN-2N1412
JAN-2N1479
JAN-2N1480
JAN-2N1481
JAN-2N1482
JAN-2N1483
JAN-2N1484
JAN-2N1485
JAN-2N1486
JAN-2N1487
JAN-2N1488
JAN-2N1489
JAN-2N1490
JAN-2N1493
JAN-2N1853
JAN-2N1854
JAN-2N2015
JAN-2N2016
JAN-2N2273
JAN-2N2708
MIL-S-195001
126B
126B
76B (Navy)
207A (EL)
207A (EL)
207A (EL)
207A (EL)
108A (EL)
180A (EL)
180A (EL)
180A (EL)
208A (EL)
208A (EL)
208A (EL)
20SA (EL)
247 (EL)
171A (Navy)
172A (Navy)
24SA (EL)
248A (EL)
244A (Sig C)
302 (EL)
Copies of transistor specification sheets
may be obtained by directing requests to
Specifications
Division, Naval Supply
Depot, 5801 Tabor Avenue, Philadelphia
20, Pa., Attn: CDS
117
Transistor Selection Charts
he accompanying charts classify
TRCA
transistors by function, by
material, and by performance level.
These charts are particUlarly useful
for an initial selection of suitable
transistors for a specific application. More complete data on these
Audio-Frequency Applications
SMALL SIGNAL-CLASS A
Germanium n-p-n
2N1010
Germanium p-n-p
2N2613
2N2614
40263
Silicon n-p-n
2N718A
2N2896
40084
2N720A
2N2897
40231
2N3241
40232
2N2102
2N2270
2N3242
40233
2N2405
3N98'"
40234
2N2895
3N99'"
403660
LARGE-SIGNAL POWER AMPLIFIERCLASS A and ClASS B
Germanium n-p-n
2N647
2N649
Germanium p-n-p
Dissipations up to 50 W
2N1183
2N2148400512N1l83A
2N286940253
2N1l83B
2N2870402542N1184
2N2953
40239
2N1l84A
4002240395
2N1l84B
4005040396
2N2147-
Dissipations of 50 W or More
2N173
2N174
2N277
2N278
2N441
* For
2N442
2N443
2NI099
2NllOO
2N1358
2N1412
2N1905
2N1906
printed-circuit-board applications.
- High-fidelity power-amplifier type.
devices, given in the Technical Data
section, should then be consulted to
determine the most suitable type_
Data charts for rectifiers, silicon
controlled rectifiers (SCR's), and
semiconductor diodes are given later
(see Table of Contents).
Silicon p-n-p
40319
40406
40410
40362
Silicon n-p-n
Dissipations up to 5 W
2N1479
40315
40348V1 *
2N1480
40317
40348V2
2N1481
40320
40349
2N1482
40321
40349V1 *
2N1700
40323
40349V2
2N1711
40326
40360
2N3585
40327
40361
40084
40347
40367°
4026440347Vl * 40407
40309
40347V2
40408
40311
40348
40409
40314
Dissipations of 5 W to 50 W
2N1483
2N3879
40322
2N1484
40250
40324
2N1485
40250V1*
40328
2N1486
40251
40364
2N1701
40310
40368
2N3054
40312
40372*
2N3583
40313
40374*
2N3584
40316
40375*
2N3878
40318
Dissipations of 50 W or More
2N1487
2N2338
2N3772
2N3055
2N3773
2N1488
40251
2N1489
2N3263
2N3264
40325
2N1490
2N3265
40363
2N1702
2N3266
40369°
2N1703
2N3442
40411
2N2015
2N3771
2N2016
- High-power
extended-frequency-range
type.
'" N-channel depletion type.
High-reliability type.
°
118
RCA Transistor Manual
Radio-Frequency Applications
SMALL SIGNAl, UHF aad VHF
Germaniam n-p-n
2N2482
Germanium' p-n-p
2N384
2N1177
2NI023
2N1178
2N1179
2NI066
Silicon n-p-n
2N917
2N3932
2N918
2N3933
2N40362N2708
2N40372N2857
2N3053
40242
2N3478
40294
2N3600
40295
LARGE SIGNAL,
Silicoa II-p-n
2N699
2N1491
2N1492
2N1493
2N2631
2N2876
2N3229
2N3375t
2N3553t
2N1225
2N1396
2N1397
40296
40404
40405
40391
40392
40394
UHF and VHF
2N3632t
2N3733t
2N3866t
2N4012t:j:
40279t
40280t
40281t
40282t
HIGH FREQUENCY
Germanium p-n-p
2N274
2N1225
2N370
2N1226
2N384
2N1283
2NI023
2N1395
2NI066
2N1396
2N1224
Silicon n-p-n
40080
40243
40081
40244
40082
40290t
40291t
40292t
40305t
40306t
40307t
40340t
40341t
2N1397
2N1631
2N1632
2N1637
2N2273
40245
40246
MIXER, OSCILLATOR, and CONVERTER
Germanium p-n-p
2N274
2N1l79
2N1397
2N374
2N1224
2N1426
2N384
2N1225
2N1526
2NI023
2N1226
2N1527
2NI066
2N1395
2N1639
40261
2N1178
2N1396
SilieaD n-p-n
40243
40244
t Overlay type .
• Silicon p-n-p type.
IF AMPLIFIER
Germanium p-n-p
2N139
2NI066
2N218
2N1180
2N1224
2N274
2N1225
2N384
2N409
2N1226
2N410
2N1395
2NI023
Silican n-p-n
40080
40243
40081
40244
40082
VIDEO AMPLIFIER
Germanium p-n-p
2N274
2NI066
2N384
2N1224
2N1225
2N699
2NI023
2N1226
Silicol I-p-n
2N1491
2N1492
2N1493
2N2102
2N2708
2N2857
2N1396
2N1397
2N1524
2N1525
2N1638
40262
40245
40246
2N1395
2N1396
2N1397
2N3118
40245
40246
Television Applications
TV DEFLECTION
Germanium p-n-p
2N3730
2N3731
TV TUNER
Silicon n-p-n
40235
40237
40236
TV VIDEO OUTPUT
Silicon n-p-n
40354
40355
2N3732
TV IF AMPLIFIER
Silicon n-p-n
40238
40240
40239
40351
40350
40352
Power Switching
Dissipations up to 5 W
Silicon n-p-n (Medium Voltage, up to tBOY)
2N697
2N1613
2N3119
2N718A
Silicon n-p-n (Higb Voltage, above tOOy)
2N720A
2N1893
:j: Frequency-multiplier type.
119
Transistor Selection Charts
Dissipations from 5 W to 50 W
Germanium p-n-p (Medium Voltage, up to looY)
2~1183
2~1183A
2~1183B
2~1184
2~1184A
2~1184B
2~2869
2~2870
Silicon n-p-n (Medium Voltage, up to looV)
2~1479
2~1701
40082
2~1481
2~2270
40250
2~1483
2~3053
40278
2~1485
2~3054
40347
2~1700
2~3230
40348
Silicon n-p-n (High Voltage, above looY)
2~1480
2~3231
40349
2~1482
2~3262
40366°
2~1484
2~3441
40367°
2~1486
2~3878
40368°
2~2102
2~3879
40373*
2~2405
40346
40375*
Silicon n-p-n (Very Higb Voltage, above 25DY)
2~3439
2~3584
40255
2~3440
2~3585
40256
2~3583
40374*
Dissipations of 50 W or More
Germanium p-n-p (Medium Voltage, up to lDDV)
2~173
2~17 4
2~441
2~ 442
2~1100
2~1358
2~277
2~278
2~443
2~1099
2~1412
2~1905
Germanium p-n-p (High Voltage, above loDV)
2~1906
Silicon n-p-n (Medium Voltage, up to lDDV) :
2~1487
2~1488
2~1489
2~1490
2~1702
2~1703
2~2015
2~2338
2~3055
2~3771
2~3772
40251
Silicon n-p-n (High Voltage, above lDDY)
2~2016
2~3263
2~3264
2~3265
2~3266
2~3442
2~3773
DC-TD-DC CONVERTERS, INVERTERS, CHOPPERS,
RELAY CONTOLS, VOLTAGE and CURRENT
REGULATORS, SERVO AMPLIFIERS
Germanium p-n-p
2~173
2~174
2~277
2~278
2~ 441
2~ 442
2~443
2~1099
2~1100
2~1183
2~1183A
2~1183B
2~1184
2~1184A
2~1184B
2~1358
2~1412
Silicon n-p-n
2~1487
2~1488
2~1489
2~1490
2~1700
2~1701
2~1702
2~1703
2~2015
2~2016
2~2338
2~3054
2~3055
2~3263
2~3264
2~3265
2~3266
2~3439
2~3440
2~3441
2~3442
2~3583
2~3584
2~3585
3~98&
3~99&
40255
40256
40369°
40389*
40390*
DIFFERENTIAL and OPERATIONAL AMPLIFIERS
Silicon n-p-n
2~1613
2~3440
40255
2~2102
3~98&
40256
2~2270
3~99&
40346
2~3439
40366°
Computer Applications
MEMORY DRIVERS
Germanium p-n-p
2~1384
Silicon n-p-n
2~2476
2~2477
2~3261
2~3262
2~3512
40283
LOGIC CIRCUITS
Germanium p-n-p (Low and Medium Speed)
2~404
2~ 404A
2~ 414
2~1300
2~1301
2~1303
2~1305
2~1307
2~1309
2~1384
2~1683
40269
Germanium n-p-n (Low and Medium Speed)
2~585
2~1302
2~1308
2~1090
2~1091
2~1304
2~1306
2~1605
2~1605A
Silicon n-p-n (High Speed)
2~706
2~706A
2~708
2~709
2~2205
2~2369A
2~2475
2~2938
2~834
2~3011
2~914
2~3261
40217
40218
40219
40220
40221
40222
DIRECT ON-OFF CONTROL (NEON OR INCANDESCENT-LAMP INDICATORS, RELAYS, COUNTERS,
and OTHER HIGH-VOLTAGE CIRCUITS)
2~398
2~398A
2~398B
.. N-channel depletion type.
High-reliability t;ype.
* For printed-circUIt-board applications.
°
120
Technical Data
for RCA. Transistors
This section contains detailed technical data for all current RCA transistors.
Types are listed according to the numerical-alphabetical-numerical sequence of their type designations. Tabular data for RCA discontinued transistors are given at the end of the section. Tabular data for silicon
rectifiers, silicou controlled rectifiers (SCR's), and semiconductor diodes
are given later in the Manual, as are outline drawings and information on
mounting hardware for all RCA semiconductor devices (see Table of
Contents).
2Nl04
TRANSISTOR
Ge p-n-p alloy-junction type used in low-power audio-frequency service.
JEDEC TO-40, Outline No.la. Terminals: 1 - emitter,2 - base, a - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector Current ........................................................................
Emitter Current ........................................................................... .
Transistor Dissipation:
At TA up to 25·C ....................................................................
At TA
50·C ........................................................................
At TA = 70·C ........................................................................
Temperature Range:
Operating (Ambient) ............................................................
Storage ........................................................................................
=
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie
IE
= 0)
=
-20 p.A.
........................................................................................
==
==
Collector-Cutoff Current (VCR
-12 V. lE
0) .......... ..
Emitter-Cutoff Current (VEB
-12 V. Ie
0) ............
Small-Signal Forward-Current Transfer Ratio
(VCE = -6 V. Ic :: -1 rnA) ............................................
Small-Signal Forward-Current Transfer Ratio Cutoff
Frequency (VCB
-3 V. Ie
-0.2 rnA) ....................
Thermal Resistance. Junction-to-Ambient ........................
=
2Nl09
=
-30
-50
50
V
rnA
rnA
150
80
30
mW
mW
mW
TA (opr)
TSTG
-65 to 70
-65 to 85
·C
V(BR)CRO
leBO
lEBO
-30 min
-lOmax
-lOmax
p.A
p.A
VeBo
Ie
IE
PT
PT
PT
·C
V
hr.
44
fhrb
9J-A
0.7
Mc/s
0.4 ·C/mW
TRANSISTOR
Ge p-n-p alloy-junction type used in low-power, small-signal and largesignal audio applications in consumer-product equipment. JEDEC TO-40,
Outline No.la. Terminals: 1 - emitter, 2 - base, a - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage .....................................................;..
Collector-to-Emitter Voltage ................................................
Emitter-to-Base Voltage ........................................................
Collector Current ........................................................................
VCBO
VCEO
VERO
10
-35
-25
-12
-150
v
V
V
rnA
121
Technical Data for RCA Transistors
MAXIMUM RATINGS (cont'd)
Transistor Dissipation:
TA up to 25"C ........................................................................
TA above 25'C ........................................................................
Temperature Range:
Operating (Junction) ......................................................... ...
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
Pi'
PT
165
mW
See curve page 112
-65 to 85
-65 to 85
255
'c
'c
Vmll)cno
-35 min
V
V(BR)eEO
-25 min
V
V(BR)EBO
-12 min
V
-0.15 max
0.2 to 0.4
-7 max
-7 max
V
V
/LA
/LA
TJ(opr)
TSTG
TL
'C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie
lE
==
==
-50 /LA.
0) ....................................................................................... .
Collector-to-Emitter Breakdown Voltage (Ie == -1 mAo
ID == 0) ....................................................................................... .
Emitter-to-Base Breakdown Voltage (IE == -7 /LA.
Ie == 0) ••......•...•..•............••.•..••..•...••......••.•..••....•...•...••.•••.••..•••...•
Collector-to-Emitter Saturation Voltage (Ie == -50 mAo
ID::.: -5 mAl ........................................................................... .
Base-b>-Emitter Voltage (VeE == -1 V. Ie == -50 mAl
Collector-Cutoff Current (VeB == -30 V. IE == 0) ........... .
Emitte.r-Cutoff Current (VEB == -12 V. Ie == 0) ............
Static Forward-Current Transfer Ratio (VeE = -1 V.
Ie == -50 mAl ....................................................................... .
Small-Signal Forward-Current Transfer Ratio
(VeE == -6 V. IE == -1 mAo f == 1 kc/s) ....................... .
Small-Signal Input Impedance (VeE == -6 V.
b == -1 mAo f == 1 kc/s) ............................................. ...
Output Capacitance (VCB == -6 V. Ie == -1 mAo
f == 0.5 Mc/s) ............................................................................
VeE (sat)
VBE
leBO
lEBO
hFE
65 to 115
h ..
50 to 150
hie
1000 to 4000
n
20 to 60
pF
Cobo
2N139
TRANSISTOR
Ge p-n-p alloy-junction type used primarily in 455-kilocycle intermediatefrequency amplifier service in battery-operated portable radio receivers and
automobile radio receivers operating from either a 6-volt or a l2-volt supply. JEDEC TO-40, Outline No.la. Terminals: 1 - emitter, 2 - base, a collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ....................................................................... .
Emitter Current ......................................................................... .
Transistor Dissipation:
TA == 25'C ................................................................................. .
TA == 71'C ............•.....................................................................
Temperature Range:
Operating (Ambient) ........................................................... .
Storage ....................................................................................... .
-16
-12
-15
15
V
V
mA
rnA
10
80
mW
mW
to 71
to 85
'C
'C
-16 min
-6 max
-40 max
V
/LA
/LA
48
14
Mc/s
VeBo
VEBO
Ie
IE
PT
p.£
TA(opr)
TSTG
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie
b
==
== -10
/LA.
0) ....................................................................................... .
=
Collector-Cutoff Current (VeB
-12 V. b == 0) ........
Emitter-Cutoff Current (VEB = -12 V. Ie == 0) ........... .
Static Forward-Current Transfer Ratio (VeE == -9 V.
Ie == -0.6 mAl ....................................................................... .
Gain-Bandwidth Product (VeE == -9 V. Ie == -1 mAl
V(BR)CBO
leBO
IDEO
hFE
iT
TYPICAL OPERATION IN 455-kc/s IF-AMPLIFIER CIRCUIT
DC Collector-to-Emitter Voltage ........................................
DC Collector Current ................................................................
Input Resistance (approx.) ....................................................
Output Resistance (approx.) ................................................
Maximum Power Gain (approx.) ........................~...............
Useful Power Gain (approx.) .......................•........................
Spot Noise Figure (approx.) ................................................
VeE
Ie
Rs
RL
MAG
MUG
NF
-9
-0.5
1000
70000
38
27.6
4.5
-9
-1
500
30000
37
30.4
4.5
V
n
n
mA
dB
dB
dB
122
RCA Transistor Manual
2N140
TRANSISTOR
Ge p-n-p alloy-junction type used primarily in converter and mixer-oscillator
service in AM battery-operated portable radio receivers and automobile
radio receivers operating from either a 6-volt or a l2-volt supply. JEDEC
TO-40, Outline No.13. Terminals: 1 - emitter, '2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Vol~ge .... ,.................................................. .
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Emitter Current ........................................................................... .
Transistor Dissipation:
TA :=: 25·C ..................................................................................
TA :=: 71·C ..................................................................................
Temperature Range:
Operating (Ambient) ........................................................... .
Storage ....................................... ~ ................................................
Veno
VEBO
Ie
IE
-16
-0.5
-15
15
V
V
rnA
rnA
PT
P'r
80
10
rnW
rnW
TA(opr)
TSTG
-65 to 71
-65 to 85
·C
·C
VmlUcBo
-16 min
-6 max
-12
",A
48
16.5
Mcls
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie :=: -10 ",A,
lE :=: 0) ••.....•.•..••..••..•....•...•...••...•.....................•..•.....••.•••.••....•..•.•
Collector-Cutoff Current (Vcn :=: -12 V, IE :=: 0) ....... .
Emitter-Cutoff Current (VIm :=: -0.5 V, Ie = 0) ....... .
Static Forward-Current Transfer Ratio (VeE
-9 V,
Ie
-0.6 rnA) ....................................................................... .
Gain-Bandwidth Product (VCJ' :=: -9 V, Ie
-0.6 rnA)
=
=
=
TYPICAL OPERATION AT 1
Mels
hFE
b
V
",A
IN SELF-EXCITED CONVERTER CIRCUIT
DC Collector-to-Ernitter Voltage ......................................
DC Collector Current ..............................................................
Input Resistance (approx.) ..................................................
Output Resistance (approx.) ................................................
RMS Base-to-Ernitter Oscillator Injection Voltage
(approx.) ....................................................................................
Useful Conversion Power Gain (approx.) ........................
2N173
ICBo
lEno
VCE
Ie
Rs
RL
-9
-0.6
700
75000
100
MUGc
32
V
rnA
n
n
rnV
dB
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in equipment having high voltage, current, and dissipation
requirements. It is used in power switching, voltage- and current-regulating,
dc-to-dc converter, inverter, power-supply, and relay- and solenoid-actuating
circuits; and in low-frequency oscillator and audio-amplifier service. JEDEC
TO-36, Outline No.H. Terminals: Lug 1 - base, Lug 2 - emitter, Mounting
Stud - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage (VBE = 1.5 V) ....................
Emitter-to-Base Voltage ........................................................
Collector Curren t ....................................................................... .
Emitter Current ......................................................................... .
Base Current ............................................................................... .
Tr~~~otoD4~~~a~~~:.................................................................
Te above 25·C ......................................................................... .
Temperature Range:
Operating (Te) and Storage (TsTG) ..............................
VCRV
VERO
Ie
1m
-60
-40
-15
15
V
V
A
A
In
-4
A
PT
PT
150
W
See curve page 112
-65 to 100
·C
V
~ -5
o
-as
-Q2
-Q4
-O.B
BASE-TO-EMITTER VOLTS
92CS-I0709T
POWER TRANSISTOR
o
-0.1
-0.2
-0.3
-0.4
-0.5
BASE AMPERES
9209-107121
2N174
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in equipment having high voltage, current, and dissipation
requirements. It is used in power switching, voltage- and current-regulating,
dc-to-dc converter, inverter, power-supply, and relay- and solenoid-actuating
circuits; and in low-frequency oscillator and audio-amplifier service. JEDEC
TO-a6, Outline No.n. Terminals: Lug 1 - base, Lug 2 - emitter, Mounting
Stud • collector and case.
124
RCA Transistor Manual
MAXIMUM RATINGS
Collector-to-Base Voltage (VRE = l.SV) ........................
Emitter-to-Base Voltage ..................................................•.......
Collector Current ........................................................................
Emitter Current ..........................................................................
Base Current .............................................................
Transistor Dissipation:
Te up to 2SoC ..........................................................................
Te above 2SoC ..........................................................................
Case Temperature Range:
Operating (Te) and Storage (TsTG) ............................
R •••••••••••••••••
VCBV
VEBO
Ie
IE
IB
-80
-60
-IS
IS
V
V
A
A
A
-4
ISO
W
See curve page 112
PT
PT
-6S to 100
°C
V(BR)CES
V(BB)CEO
-70 min
-55 min
V
V
VeE (sat)
VCE(sat)
VEB
VRT
-0.7 max
-0.3 typ
-1 max
-GO min
V
V
V
V
VBE
VBE
-0.6S typ
-0.9 max
V
V
ICBo
ICBo
leBO
-100
-4 max
-IS max
mA
mA
lEBO
lEBO
-1 typ
-4 max
mA
mA
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
Ie
-0.3 A. RBE
0 ........................................................
Ie
-1 A. IB = 0) ..............................................................
Collector-to-Emitter Saturation Voltage:
Ie
-12 A. IB = -2 A .........................................................
Ie = -12 A. IB
-2 A ....................................................... .
Emitter to Base Voltage (VCB = -80 V. IE
0) ....... .
Collector-to-Emitter Reach-Through Voltage ................
Base-to-Emitter Voltage:
VCE = -2 V. Ic
-S A ................................................... .
VeE = -2 V. Ic
-S A ................................................... .
Collector-Cutoff Current:
VeB = -2 V. IE
O. Te
2SoC .................................. ..
VCB = -80 V. IE = O. Tc
2SoC ..................................... .
VCB = -GO V. IE = O. To
71°C ................................... ...
Emitter-Cutoff Current:
VEB == -60 V. Ie = 0 ............................................................
VEB == -60 V. Ie == 0 ............................................................
=
=
=
=
=
=
=
=
=
==
=
,.
/LA
TYPICAL COLLECTOR CHARACTERISTICS
I
I
I
I
I
T1PE 2NI71
I-COMMON - EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE· 25°C
-20
13a:
T
w
~ -15 ;;200
-700
«
~ -10
~~oo
-500
-400
~
..J
-3~0250
o
(J
-200
J.:,!..50 0
_\0 .~..,O
-5
BASE
MILLIAMPERE~
-I
o
-10
-20
....-
,~
)
-30
-40
-50
-60
COLLECTOR-TO-EMITTER VOLTS
TYPICAL TRANSFER CHARACTERISTICS
TYPE 2NI74
COMMON-EMITTER CIRCUIT, BASE INPUT.
-I 5
COLLECTOR-TO-EMITTER VOLTS =-2
1-) )13
-10
TYPICAL TRANSFER CHARACTERISTICS
J
f--
-15
'"
TYPE 2NI74
COMMON-EMITTER CIRCUIT, BASE INPUT: _
1 ~(
COLLECTOR-TO-EMITTER VOLTS =-2
W
I
0::
~ f:::?
~\)~~
~
~R"
5
~7
c"s~
_I'/.~O
o
- 0.2
-0.4
-0.6
-O.B
BASE-TO-EMITTER VOLTS
92CS-I0710T
~-IO
k:::;: ~p
a:
~
:::1-5
o
'"
o
I
IJR~'~
~J."I~""~~'2.5
'"
Q.
~
-80
92CM-I0736T
eO-+-
~~
AV
'"
-0.2
-0.4
-0.6
-0.8
BASE AMPERES
92C$-101I1T
125
Technical Data for RCA Transistors
CHARACTERISTICS (cant'd)
Static Forward-Current Transfer Ratio:
VeE
-2 V. Ie = -5 A....................................................
VeE
-2 V. Ie = -12 A ...................•..............................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeE
-6 V. Ie
-5 A) ........................
Thermal Resistance. Junction-to-Case ................................
==
=
=
hFE
hFE
25 to 50
20
fUe
9J-e
10
0.5 max
kc/s
·C/W
2N175
TRANSISTOR
Ge p-n-p alloy-junction type used in small-signal af amplifier applications
in hearing aids, microphone preamplifiers, recorders, and other low-power
applications. JEDEC TO-40, Outline No.la. Terminals: I - emitter, 2 - base,
a - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Emitter-to-Base Voltage ........................................................... .
Collector Current ........................................................................
Emitter Current ..........................................................................
Transistor Dissipation:
TA at 25·C ....................•...........................................................
TA at 71·C ................................................................................
TWfe;i~=e (~tr~nt)
............................................................
Storage ........................................................................................
V
V
-10
-10
-2
2
rnA
rnA
50
10
mW
mW
TA(opr)
TSTG
71
-65 to 85
·C
·C
leBO
lEBO
-12 max
-12 max
/loA
/loA
fhl.
0.85
Mc/s
NF
6 max
dB
VCBO
VEBO
Ie
IE
PT
PT
CHARACTERISTICS
Collector-Cutoff Current (VeB = -25 V. lE = 0) ..... .
Emitter-Cutoff Current (VEB = -12 V. Ie = 0) •••••.••••
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB = -4 V. Ie
-0.5 rnA) ................... .
Noise Figure (VOE = -4 V. Ie
-0.5 rnA.
RI. = 1000 O. Roe = 20000 0) ........................................
==
2N176
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in large-signal af amplifiers in class A
power-output stages and class B push-pull amplifier stages in automobile
radio receivers. JEDEC TO-a, Outline No.2. Terminals: I - base, 2 - emitter,
Mounting Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector Current ......................................................................
Emitter Current ..........................................................................
Transistor Dissipation:
~:~ ~£o!~ ~~:~
::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Temperature Range:
Operating (TMF) and Storage (T.TG) ........................... .
-40
-3
3
VeBo
Ie
lE
PT
PT
V
A
A
10
W
See curve page 112
-65 to 90
·C
CHARACTERISTICS
Breakdown Voltage
(Ie = -330 rnA. RBE
0) ....................•....................•......
Collector-Cutoff Current (VeB = -30 V. IE
0) ....... .
Emitter-Cutoff Current (VEB
-10 V. Ie = 0) ............
Static Forward-Current Transfer Ratio
(VeE
-2 V. Ie = -0.5 A) ............................................
Small-Signal Forward-Current Transfer Ratio
(f
1 kc/s. VeE
-2 V. Ie
-0.5 A) ................... .
Thermal Resistance. Junction-to-Ambient ..................... .
Collector-to~Emitter
=
=
=
=
=
=
=
V(BR)CES
leBO
lEBO
-30 min
hFE
h,.
9J-A
-3 max
-2 max
V
mA
mA
63
45
1 max
·C/W
TYPICAL OPERATION IN CLASS A POWER-AMPLIFIER CIRCUIT
DC Collector-Supply Voltage ................................................
DC Collector-to-Emitter Voltage ..........................................
DC Base-to-Emitter Voltage ..................................................
Vee
VeE
VBE
-14.4
-13.7
-0.24
V
V
V
128
RCA Transistor Manual
TYPICAL OPERATION (cont'd)
Peak Collector Current ............................................................
Zero-Signal Collector Current ................................................
Emitter Resistance ....................................................................
iC(peak>
li:!ii~~~~§.~~:::~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
Total Hannonic Distortion ......................................................
Zero-Signal Collector Dissipation ........................................
Maximum-Signal Power Output ............................................
2N215
-1
-0.5
1
A
A
1
10
35.5
4
6.83
2
kc/s
25
POID
n
n
n
dB
%
W
w
TRANSISTOR
Ge p-n-p alloy-junction type used in low-power audio-frequency amplifier
applications. JEDEC TO-1, Outline No.1. Terminals: 1 - emitter, 2 - base,
a - collector. This type is electrically identical with type 2N104.
2N217
TRANSISTOR
Ge p-n-p alloy-junction type used in low-power, small-signal and large-signal
audio applications in consumer-product equipment. JEDEC TO-1,· Outline
No.1. Terminals: 1 - emitter, 2 - base, a - collector. This type is electrically
identical with type 2N109.
2N218
TRANSISTOR
Ge p-n-p alloy-junction type used primarily in 455-kilocycle intermediatefrequency amplifier service in battery-operated portable radio receivers and
automobile radio receivers operating from either a 6-volt or a 12-volt supply. JEDEC TO-1, Outline No.1. Terminals: 1 - emitter, 2 - base, a - collector.
This type is electrically identical with type 2N139.
2N219
TRANSISTOR
Ge p-n-p alloy-junction type used primarily in converter and mixer-oscillator
service in AM battery-operated portable radio receivers and automobile radio
receivers operating from either a 6-volt or a 12-volt supply. JEDEC TO-1,
Outline No.1. Terminals: 1 - emitter, 2 - base, 3 - collector. This type is
electrically identical with type 2N140.
2N220
TRANSISTOR
Ge p-n-p alloy-junction type used in small-signal af amplifier applications
in hearing aids, microphone preamplifiers, recorders, and other low-power
applications. JEDEC TO-1, Outline No.1. Terminals: 1 - emitter, 2 - base,
3 - collector. This type is electrically identical with type 2N175.
2N270
TRANSISTOR
Ge p-n-p alloy-junction type used in large-signal applications in class A
driver stages and af amplifiers, and class B push-pull line- and batteryoperated af amplifiers. Similar to JEDEC TO-7 (a-lead type), Outline No.4.
Terminals: 1 - emitter, 2 - base, 3 - no connection, 4 - collector.
Technical Data for RCA Transistors
127
MAXIMUM R.ATINGS
Collector-to-Base Voltage ......................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Emitter Current ............................................................................
Tr~~t,s~ofo ~~S;;lf~~.~~~.: .................................................................
TA above 25·C ..........................................................................
Tr~l~~;:~~. ~~~~~~. . : : : : : : : : : : : : : : : : : : : : : : : : : : : : : :
VOBO
VEBO
Ic
1m
PT
PT
-25
-12
-75
75
V
V
mA
mA
250
mW
See curve page 112
TA(opr)
TSTG
-65 to 71
-65 to 85
·C
·C
Vemo
leBo
lEBO
-25
-16max
-12 max
p.A
p.A
hFE
70
1
Mc/s
0.24 max ·C/mW
CHARACTERISTICS
Collector-to-Emitter Voltage ............................................... .
Collector-Cutoff Current (VeB
-25 V. IE
0) ........
Emitter-Cutoff Current (VEB
-12 V. Ie
0) ........
Static Forward-Current Transfer Ratio
(VCE = -1 V. Ic
-150 mA) ........................................
Gain-Bandwidth Product ....................................................... .
Thermal Resistance. Junction-to-Ambient ...................... ..
==
==
=
fT
8J-A
V
TYPICAL OPERATION IN CLASS A POWER-AMPLIFIER CIRCUIT
DC Collector-Supply Voltage ................................................
DC Collector-to-Emitter Voltage ..........................................
DC Base-to-Emitter Voltage ....................................................
DC Collector Current ................................................................
Emitter Resistance .................................................................... ..
Load Impedance ..........................................................................
Signal Frequency ...................................................................... ..
Power Gain ....................................................................................
Zero-Signal Transistor Dissipation ...................................... ..
Maximum-Signal Power Output ..........................................
Total Harmonic Distortion:
At power output = 60 mW ............................................... .
At power output = 10 mW ............. _............................... ..
Vee
Vcm
VBE
Ie
RL
GPIll
POIll
-9
-8.7
-0.19
-19
400
,(110
V
V
V
mA
n
n
1
35
128
60
kc/s
dB
mW
mW
lOmax
4 max
%
%
2N274
TRANSISTOR
Ge p-n-p alloy drift-field type used in rf and if amplifier, oscillator, mixer,
and converter circuits, and in low-level video-amplifier circuits in industrial
and military equipment. JEDEC TO-44, Outline No.14. Terminals: 1 emitter, 2 - base, 3 - collector, Center Lead - interlead shield and case.
MAXIMUM RATINGS
Collector-to-Bas.e Voltage ..................................................... .
Collector-to-Emltter Voltage (VBE
0.5 V) ............... .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Emitter Current ........................................................................... .
=
Tr~t,s~fo ~~~slr~~~~:.................................................................
TA above 25·C ........................................................................
TA ::::: 25·C (with heat sink) ............................................... .
TA above 25·C (with heat sink) ....................................
Temperature Range:
Operating (TA) and Storage (TsTG) ............................ ..
VCBO
Vcmv
VEBO
Ie
1m
PT
PT
PT
PT
-40
-40
-0.5
-10
10
V
V
rnA
mA
rnA
120
mW
See curve page 112
240
mW
See curve page 112
-65 to 100
·C
VCBR)CBO
-40 min
V
VRT
ICBo
lEBO
-40 min
-12 max
-12 max
V
p.A
p.A
hfe
20 to 175
fhtb
30
3 max
Mc/s
pF
150
1350
n
n
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(Ic =: -50 p.A. 1m =: 0) ....................................................... .
Collector-to-Base Reach-Through Voltage
(VmB =: -0.5 V) ................................................................... .
Collector-Cutoff Current (VCB =: -12 V. IE =: 0) ........
Emitter-Cutoff Current (VEB =: -0.5 V. Ic
0) .......... ..
Small-Signal Forward-Current Transfer Ratio
(f
1 kc/s. VeE = -12 V. IE =: 1.5 rnA) .................. ..
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCB = -12 V. 1m
1.5 rnA) .................. ..
Output Capacitance (VeB
-12 V. IE
0) .................. ..
Input Resistance:
VCE = -12 V. IIll = 1.5 rnA. f =: 12.5 Mc/s ................
VCE =: -12 V. IIll
1.5 rnA. f =: 1.5 Mc/s ..................
=
=
=
=
=
=
Cobo
Rle
R'e
RCA Transistor Manual
128
CHARACTERISTICS (cont'd)
Output Resistance:
Vem
-12 V. 1m
1.5 IDA, f = 12.5 Mcls ....•...........
Vem
-12 V. 1m
1.5 mAo f = 1.5 Mcls ................
Power Gain:
Vcm = -12 V. 1m = 1.5 mAo f
12.5 Mcls ............... .
Vcm
-12 V. 1m
1.5 rnA. f
1.5 Mcls ............... .
Thermal Resistance. Junction-to-Case ............................... .
Thermal Resistance. Junction-to-Ambient ........................
=
=
=
=
=
=
R.e
==
n
n
4000
70000
Roe
17 to 27
dB
40 to 50
dB
0.31 max ·C/mW
0.62 max ·C/mW
Gpo
Gpo
9J-e
9J-A
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N274
COMMON-EMITTER CIRCUIT. BASE INPUT.
-3.5 AMBIENT TEMPERATURE' 2SoC
..
-3
'"
/'
1-2.5
C(
:;
i
-2
II:
~ -1.5
~
6u
":1
/'
I'
--
f--
--~
I""""
~~
If
~
-
-
~2-
~
BASE MICROAMPlREs s-20
1/
-10
-0.5
o
-2
-4
-6
-8
-10 -12 -14 -\6
-18
COLLECTOR-TO-EMITTER VOLTS
-20
-22
-24
-26
,2CM-'418T1
TYPICAL OPERATION IN VIDEO-AMPLIFIER CIRCUIT
DC Collector-to-Emitter Voltage ........................................
DC Emitter Current ..................................................................
Source Impedance ......................................................................
Capacitive Load ............................................................................
Frequency Response ................................................................... .
Pulse-Rise Time ............................................................................
Voltage Gain ............................................................................... .
Maximum Peak-to-Peak Output Voltage ........................
C,
C.
VCE
IE
Rs
tr
= 25
-12
5.8
150
16
20 Cis to 9
0.039
26
20
V
mA
/LF. 12 volts
= 25 /LF. 25 volts
=
C.
100 to 300 pF (variable)
C. = 100 /LF, 12 volts
L=30/LH
R. 20000 ohms, 0.25 watt
R. = 3600 ohms. 0.25 watt
R.
2000 ohms. 0.25 watt
R. = 62 ohms. 0.25 watt
R. = 620 ohms, 0.25 watt
CI
~r--+-..!Of--r
=
=
TO PREVIOUS
STAGE
1.,...
92CS-I0394RI
n
pF
Mcls
J'JV
129
Technical Data for RCA Transistors
2N277
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in industrial and military equipment requiring transistors
having high voltage, current, and dissipation values. It is used in powerswitching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuit; and in low-frequency oscillator and audio-amplifier service. JEDEC TO-36, Outline No.n.
Terminals: Lug 1 - base, Lug 2 - emitter, Mounting Stud - collector and case.
This type is identical with type 2N173 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (VBE = 1.5 V) ....................
Emitter-to-Base Voltage ..........................................................
VCBV
VERO
--40
-20
V
V
-40 min
-25 min
V
V
-0.3
-1 max
-40 min
V
V
V
--4 max
-15 max
mA
mA
-1 typ
-4 max
mA
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
Ie
-0.3 A, RBE
0 ........................................................
V(BR)CES
Ic = -1 A, In = 0 ................................................................
V(BR)CEO
Collector-to-Emitter Saturation Voltage
(Ic = -12 A, lB = -2 A) ....................................................
VCE(sat)
Emitter-to-Ba,se Voltage (VCB = --40 V, IE = 0) ........
VEB
Collector-to-Emitter Reach-Through Voltage· ................
VRT
Collector-Cutoff Current:
VCB = -40 V, IE = 0, Tc = 25'C ....................................
ICBo
VCB = -40 V, IE = 0, Tc = 71'C ....................................
ICBo
Emitter-Cutoff Current:
VEB
-20 V, Ic = 0 ............................................................
lEBO
VEB = -20 V, Ic = 0 ............................................................
lEBO
TYPICAL COLLECTOR CHARACTERISTICS
=
=
=
rnA
TYPE 2N277
f-COMMON - EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE. 25·C
-20
f3
'"~-15 ~O~7JO
OJ
!--~ -600_ 500
ct
'"....o
-..!0~300
/;l-IO
~O-150
..J
..J
8
.-:;).00
-5
o
11 -
BASE MILLIAMPERES'
-5
-10
'10
-15
-20
-25
-30
COLLECTOR-TO-EMITTER VOLTS
-35
~
-
-40
92CM-I0725T
2N278
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in industrial and military equipment requiring transistors
having high voltage, current, and dissipation values. It is used in powerswitching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-switching, and relay- and solenoid-actuating circuits; and in low-frequency oscillator and audio-amplifier service. JEDEC TO-36, Outline No.n.
Terminals: Lug 1 - base, Lug 2 - emitter, Mounting Stud,.- collector and
case. This type is identical with type 2N173 except for the following items:
MAXIMUM RATINGS
-50
V
Collector-to-Base Voltage (VBE = 1.5 V) ....................
VCBV
Emitter-to-Base Voltage. ..........................................................
VEBO
-30
V
130
RCA Transistor Manual
CHARACTERISTICS
Collector-to-Emltter Breakdown Voltage:
Ie = -0.3 A ............................................................................
Ie
-1 A. lB
0 ................................................................
Emltter-to-Base Voltage (VeB = -50 V. IE
0) ......... .
Collector-to-Emitter Reach-Through Voltage ................
Collector-Cutoff Current:
VeB
-50 V. IE,
O. Te
71°C ................................... .
VeB = -50 V. IE
O. Te
25°C ....................................
Emitter-Cutoff Current:
VEB
-30 V. Ie
0 .......................................................... ..
VEB
-30 V. Ie = 0 .......................................................... ..
=
=
=
=
=
=
=
=
V
),-
-15
-20
-25
-30
COLLECTOR-TO-EMITTER VOLTS
VI'
-0.4
-0.6
-O.B
BASE-TO-EMITTER VOLTS
-I
82CS-I0720T
0
-0.2
-0.4
-0.6
BASE AMPERES
-0.8
12CS-I072IT
141
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeE = -6 V. Ie
-5 A) ........................
Thermal Resistance. Junction-to-Case ..............................
=
10
0.5 max
fuo
9J-e
kc/s
·C/W
2N442
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in industrial and military equipment requiring transistors
having high voltage, current, and dissipation values. It is used in powerswitching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency oscillator and audio-amplifier service. It is stud-mounted to provide
positive heat-sink contact. JEDEC TO-a6, Outline No.n. Terminals: Lug
1 - base, Lug 2 - emitter, Mounting Stud - collector and case. This type is
identical with type 2N441 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (VBE = 1.5 V) ....................
Emitter-to-Base Voltage ........................................................
-50
-30
V
V
VCBR)CES
VCBR)CEO'
VEB
Vl\T
-45 min
-30 min
-1 max
-50 min
V
V
V
V
ICBO
lOBO
-4rnax
-lSrnax
rnA
rnA
lEBO
lEBO
-1 typ
-4rnax
rnA
rnA
VeBV
VEllO
CHARACTERISTICS (At case temperature = 25°C)
Collector-to-Emitter Breakdown Voltage:
Ie = -0.3 A. RllE == 0 ...................................................... ..
Ic = -1 A. Is == 0 ............................................................... .
Emitter-to-Base Voltage (VCB
-50 V. IE == 0) ........
Colleetor-to-Emitter Reach-Through Voltage .............. ..
Collector-Cutoff Current:
VCB = -50 V. IE
O. Tc = 2S·C ....................................
Vell
-SO V. lE == O. Tc = 71°C ....................................
Emitter-Cutoff Current:
VEB
-30 V. Ic _ 0 ...................................................... ..
VEB = -30 V. Ic = 0 ........................................................
=
=
=
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N442
COMMON- EMITTER CIRCUIT, BASE INPUT.
CASE TEMjERATURE. 2S"C
-15
,tOO
~~J
-BOO
--
-600
~
-500
-400
-300
~
-200
-5
-100
BASE MILLIAMPERESI.-50
o
-
-
f---
J
-10
-20
j
-30
-40
-50
COLLECTOR-TO-EMITTER VOLTS
POWER TRANSISTOR
-60
92CM-I0739T
2N443
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in industrial and military equipment requiring transistors
having high voltage, current, and dissipation values. It is used in powerswitching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-fre-
RCA Transistor Manual
142
quency oscillator and audio-amplifier service. It is stud-mounted to provide
positive heat-sink contact. JEDEC TO-36, Outline No.n. Terminals: Lug
1 - base, Lug 2 - emitter, Mounting Stud - collector and case. This type is
identical with type 2N 441 except for the following items:
MAXIMUM RATINGS
-60
-40
V
V
VCBO
-18 min
V
V(BR)IilBO
-10 min
V
VC;Iil(sat)
-0.2 min
V
VeBO
VOlilV
VlilBO
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = -0.02 rnA.
Ilil = 0) ......................................................................................
Emitter-to-Base Breakdown Voltage (IB
-0.02 rnA.
Ic = 0) .............;..........•.............................................................
Collector-to-Emitter Saturation Voltage (Ie = -20 rnA.
b =";'1 rnA) ..........................................................................
=
143
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Base-to-Emitter Voltage (Ie = -20 rnA. IB = -1 rnA)
Emitter-to-Base Reach-Through Voltage
(VBE = 1 V) ........................................................................
Collector-Cutoff Current:
VCR
-12 V. IE
O. TA
25°C ....................................
Static Forward-Current Transfer Ratio (VeE = -0.3 V.
Ie = -20 rnA) ........................................................................
Stored Base Charge (Ie
-20 rnA. lB = -2 rnA) ........
=
=
=
=
VBI!l
-0.5 max
V
VRT
-15 min
V
ICBO
-lOmax
A
hFE
Qs
20 min
2400 max
pC
2N582
COMPUTER TRANSISTOR
Ge p-n-p alloy-junction type used in switching applications in data-processing equipment. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base,
3 - collector. This type is identical with type 2N404 except for the following items:
MAXIMUM RATINGS
Collector-to-Ernitter Voltage (VBl!l
1 V) ....................
VCEV
-14
V
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
Ic = -24 rnA. lB = -0.6 rnA ............................................
Ic
-100 rnA. lB
-5 rnA ............................................
Base-to-Ernitter Voltage:
Ic = -24 rnA. lB = -0.6 rnA ............................................
Ic
-100 rnA. lB
-5 rnA ............................................
Emitter-to-Base Reach-Through Voltage (VBE = 1 V)
Static Forward-Current Transfer Ratio:
VCE = -0.2 V. Ic
-24 rnA ........................................
VCE = -0.3 V. Ie
-100 rnA ........................................
Small-Signal Forward-Current Transfer Ratio Cutoff
Frequency (VCB = -6 V, Ie
-1 rnA) ......................
Stored Base Charge (Ie = -24 rnA, lB = -1.2 rnA)....
=
=
VeE (sat)
VCE(sat)
-0.2 max
-0.3 max
V
V
=
=
VBE
VBE
VRT
-0.4 max
-0.8 max
-14 min
==
hFE
hFE
40 min
20 min
V
V
V
V
fhto
Qs
14 min
1200 max
=
Mc/s
pC
2N585
COMPUTER TRANSISTOR
Ge n-p-n alloy-junction type used in switching applications in data-processing equipment. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base,
3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage .................................................... ..
Collector-to-Emitter Voltage:
VBE = -1 V .......................................................................... ..
Base open ................................................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current .................................................................. ..
Emitter Current ........................................................................
Transistor Dissipation:
TA
25°C ................................................................................
TA
55°C ................................................................................
T ..
71°C ................................................................................
Temperature Range:
VeBO
25
V
VeEv
VeEo
VEBO
10
IE
24
15
20
200
-200
V
V
V
mA
rnA
120
35
10
mW
mW
mW
TA(opr)
TSTG
-65 to 71
-65 to 85
°C
·C
=
V(BRlCBO
25 min
V
V(BRleEO
15 min
V
=
V(BRlEBO
20 min
V
VCE(sat)
0.2 max
V
=
=
=
~l:r~~~~.....~~~.~~~~.....::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
PT
PT
PT
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = 25 p.A.
IE = 0) ......................................................................................
Collector-to-Emitter Breakdown Voltage (Ic
600 p.A.
IB
0) ......................................................................................
Emitter-to-Base Breakdown Voltage (IE = 25 p.A.
Ic
0) .................................................................................... ..
Collector-to-Emitter Saturation Voltage (Ie
20 rnA.
IB
1 rnA) ............................................................................ ..
=
=
=
144,
RCA Transistor Manual
CHARACTERISTICS (cont'd)
=
Base-to-Emitter Voltage (10:= 20 mA, b
1 mAl
Collector-Cutoff Current:
VCB = 0.25 V, IE =,0 ........................................................... .
VCB = 12 V. 1m = 0 ................................................................
Emitter-Cutoff Current (VmB = 5 V. 10 = 0) ...•............
Static Forward-Current Transfer Ratio (Vem = 0.2 V.
Ie = 20 mAl ............................................................................
Small-Signal Forward-Current Transfer Ratio Cutoff
Frequency (VeB = 6 V. 1m = -1 mAl ........................... .
Output Capacitance (VCB := 6 V. 1m
0) ........................
Stored Base Charge (Ie = 20 mAo b := 2 mAl ........... .
=
2N586
VBm
0.45 max
V
ICBO
ICBO
lEBO
6 max
8 max
5 max
p,A
p,A
p,A
hFE
20 min
fhib
3 min
25 max
3000 max
Coho
Qs
Mc/s
pF
pC
TRANSISTOR
Ge p-n-p 'alloy-junction type used in low-speed switching applications in
industrial and military equipment. It can also be used in large-signal class
A and class B push-pull af amplifiers. Similar to JEDEC TO-7 (3-lead
type), Outline No.4. Terminals: 1 - emitter, 2 - base, 3 - no connection,
4 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Emitter-to-Base Voltage ........................................................ ,.
Collector Current ........................................................................
Emitter Current ................................•.........................................
Transistor Dissipation:
TA
25·C ............................................................................... .
TA
SS·C ................................................................................
TA = 71·C ................................................................................
Ambient-Temperature Range:
Operating (TA) and Storage (TSTG) .............................. ..
=
=
-45
-12
-250
250
V
V
mA
mA
250
125
60
mW
mW
mW
-65 to 85
·C
V(BR)eES
V(BR) CEO
VRT
-45 min
-25 min
-45 min
V
V
V
VCE(sat)
VBE
leBO
lEBO
-0.5 max
-1 max
-16 max
-12 max
V
V
p,A
VCBO
VEBO
Ie
IE
PT
PT
PT
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
Ie = -50 /LA, RBE = 0 ........................................................
Ie
-1 rnA. IB = 0 ............................................................
Collector-to-Emitter Reach-Through Voltage ................
Collector-to-Emitter Saturation Voltage
(Ie := -250 mAo IB = -25 rnA) ........................................
Base-to-Emitter Voltage (Ie
-250 mA. Iu
-7 rnA)
Collector-Cutoff Current (VeB := -45 V. IE = 0) •.......
Emitter-Cutoff Current (VmB
-12 V. Ie
0) ••••...•
Static Forward-Current Transfer Ratio{Vcm = -0.5 V.
Ie = -250 rnA) .....................................•.........................;........
=
=
=
=
=
2N591
hFE
/LA
35 min
TRANSISTOR
Ge p-n-p alloy-junction type used in large-signal af driver applications in
class A stages of automobile radio receivers. JEDEC TO-I, Outline No.1.
Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Emitter Voltage ................................................
VeEO
Collector Current ......................................................................
Ie
Emitter Current ..........................................................................
IE
Transistor Dissi,p,ation:
With Heat Sink
TA up to 55 C ........................................................................
100
TA = 71·C ................................................................................
40
TeWte~~=e (~r~nt)
............................................................
Storage ........................................................................................
CHARACTERISTI,CS
V
mA
mA
Sink
mW
mW
TA{opr)
TSTG
-65 to 71
-65 to 85
·C
leBO
lEBO
-7 max
-20 max
p,A
p,A
·C
~
==
Collector-Cutoff Current (VeB = ~1 V. IE
0) ..........
Emitter-Cutoff Current (VEB
-1 V. Ie
0) ............
Static Forward-Current Transfer Ratio (VeE:= -12 V.
IE
2 mA) ..............................................................................
=
-32
-40
40
Without Heat
50
20
=
hFE
70
Technical Data for RCA Transistors
145
CHARACTERISTICS (cont'd)
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeE = -12 V, IE = 2 rnA) ........................
Thermal Resistance:
Junction-to-ambient ..............................................................
With heat sink ........................................................................
fbfb
9J-A
0.7
Mc/s
340 max
150 max
°C/W
°C/W
TYPICAL OPERATION IN CLASS A AF DRIVER-AMPLIFIER CIRCUIT
DC Collector-Supply Voltage ................................................
DC Collector-to-Emitter Voltage ........................................
DC Base-to-Emitter Voltage ................................................
DC Collector Current ................................................................
Input Resistance ..........................................................................
Output Resistance ......................................................................
Signal Frequency ........................................................................
Power Gain ................................................................................ ..
Total Harmonic Distortion ................................................... ...
Transistor Dissipation ..............................................................
Power Output ..............................................................................
Vee
VeE
VnE
Ie
Rs
RL
-14.4
-12
-0.13
-2
1000
10000
1
41
3
POE
25
5
V
V
V
rnA
n
n
kc/s
dB
%
mW
mW
2N647
TRANSISTOR
Ge n-p-n alloy-junction type used in large-signal ai-amplifier applications
in battery-operated portable radio receivers and phonographs. N-P-N construction permits complementary push-pull operation with a matching
p-n-p type, such as the 2N2l7. JEDEC TO-l, Outline No.1. Terminals:
1 - emitter, 2 - base, 3 - collector (red dot).
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ................................................. .
Emitter-to-Base Voltage ............................................................
Collector Current ........................................................................
Emitter Current ............................................................................
Transistor Dissipation:
TA = 25°C ................................................................................
TA
55°C ................................................................................
TA = 71°C ...............................................................................•
Temperature Range:
Operating (Ambient) ............................................................
Storage ........................................................................................
=
CHARACTERISTICS
=
== =
Collector-Cutoff Current (Ven
25 V, IE
0) ............
Emitter-Cutoff Current (VEB = 12 V, Ie
0) •...............
Static Forward-Current Transfer Ratio (VeE
1 V,
Ie = 50 rnA) ...................................................•........................
IE
25
25
12
100
-100
V
V
V
rnA
rnA
PT
PT
PT
100
50
20
mW
rnW
mW
-65 to 71
-65 to 85
°C
°C
14rnax
14 max
p.A
p.A
VeBo
VeEo
VEBO
Ie
TA(opr)
TSTo
Ieno
lEBO
hFE
70
TYPICAL OPERATION IN CLASS B COMPLEMENTARY-SYMMETRY CIRCUIT'
DC Collector-Supply Voltage ............................................... .
DC Collector-to-Emitter Voltage for driver stage ........
Zero-Signal DC Base-to-Emitter Voltage for output
stage ........................................................................................... .
Peak Collector Current for each transistor in output
stage ............................................................................................
Zero-Signal DC Collector Current for each transistor
(driver and output stage) ..................................................
fA~1 ::s~~':::t'::c: ..::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Load Resistance ..........................................................................
Power Gain .................................................................................. ..
Total Harmonic Distortion ....................................................
Power Output (input = 20 mV) ...................................... ..
TRANSISTOR
V
V
Vee
VeE
6
2.3
VnE
0.14
V
70
rnA
1.5
1
1100
45
54
10
100
rnA
kc/s
ie(peak)
Ie
Rs
RL
POE
n
n
dB
%
mW
2N649
Ge n-p-n alloy-junction type used in large-signal ai-amplifier applications
in battery-operated portable radio receivers and phonographs. N-P-N construction permits complementary push-pull operation with a matching
RCA Transistor Manual
146
p-n-p type, such as the 2N408. JEDEC TO-I, Outline No.!. Terminals:
1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Bas.e Voltage ................................................... .
Collector-to-Emitter Voltage ............................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Emitter Current ......................................................................... .
Transistor Dissipation:
TA = 25°C ............................................................................... .
TA == 55°C ................................................................................
TA == 71°C ............................................................................... .
Temperature Range:
Operating (Ambient) ........................................................... .
Storage ....................................................................................... .
VeBo
VeEo
VEBO
Ie
IE
20
18
2.5
100
-100
rnA
rnA
100
50
20
mW
mW
mW
-65 to 71
-65 to 85
°C
°C
14 max
14 max
/LA
/LA
PT
PT
PT
TA(opr)
TSTG
V
V
V
CHARACTERISTICS
Collector-Cutoff Current (VeB == 12 V. IE == 0) ............
Emitter-Cutoff Current (VEB == 2.5 V, Ie == 0) ................
Static Forward-Current Transfer Ratio (VeE == 1 V.
Ie == 50 rnA) ............................................................................
leBO
lEBO
65
hFE
TYPICAL OPERATION IN CLASS B COMPLEMENTARY·SYMMETRY CIRCUIT
DC Collector Supply Voltage ............................................... .
DC Collector-to-Emitter Voltage for driver stage ........
Zero-Signal DC Base-to-Emitter Voltage for output
stage ...............................................\ ............................................
Peak Collector Current for each transistor in output
stage ............................................................................................
Zero-Signal DC Collector Current for each transistor
Si=v~~e~~n~~~~...~~~.:~....::::::::::::::::::::::::::::::::::::::::::::::::
Input Resistance ..........................................................................
Load Resistance ......................................................................... .
Power Gain ....................................................................................
Total Harmonic Distortion (Poe == 100 mW) ................
Power Output (input == 20 mV) ........................................ ..
2N697
Vee
VeE
6
2.3
VBE
0.14
V
70
rnA
1.5
1
1100
45
54
lOmax
100
rnA
kc/s
ie(peak)
Ie
Rs
RL
POE
V
V
n
n
dB
%
mW
COMPUTER TRANSISTOR
Si n-p-n planar triple-diffused-base type used in switching applications in
data-processing equipment. JEDEC TO-5, Outline No.3. Terminals: 1 emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
....................................................
~ll~~~:~:~tt!O~fag;:
VeBo
60
V
RBE == 100 n ............................................................................
Emitter-to-Base Voltage ......................................................... ,
Collector Current •.......................................................................
Transistor Dissipation:
TA up to 25°C ..........................................................................
Te up to 25°C ........................................................................... .
TA or Te above 25°C ........................................................
Temperature Range:
Operating (TA and Te) and Storage (TsTG) ............
Lead-Soldering Temperature (10 s max) ........................
VeER
VEBO
Ic
40
V
V
rnA
PT
PT
PT
5
500
0.6
W
2
W
See curve page 112
-65 to 175
255
·C
·C
V(BR)CBO
60 min
V
V(BR)EBO
5 min
V
40 min
V
VeE (sat)
1.5 max
V
VBE(sat)
1.3 max
V
ICBO
ICBo
1 max
100 max
/LA
/LA
TL
CHARACTERISTICS
== 0.1 rnA,
0) ........................................................................................
Collector-to-Base Breakdown Voltage (Ie
IE
==
Emitter-to-Base Breakdown Voltage (IE == 0.1 rnA.
Ie == 0) ..•.....•.....•...•...••.......•......•..................•.............•........•..•...•
Collector-to-Emitter Sustaining Voltage (Ie == 100 rnA,
t p ~ 12 IDSJ.d! ~ 2%. RBE == 10 OJ ................................
Collector-to-J!illli.tter Saturation Voltage (Ie == 150 rnA.
IB == 15 rnA) ............................................................................
Base-to-Emitter Saturation Voltage (Ie == 150 rnA.
IB = 15 mA) .••.•....•.•....•...••......................................................
Collector-Cutoff Current:
VCB == 30 V. IE == O. TA == 25°C ....................................... .
VCB == 30 V. IE
O. TA == 150°C .................................... ..
=
VeER (sus)
147
Technical Data for RCA Transistors
CHARACTERISTICS (cant'd)
Pulsed Static Forward-Current Transfer Ratio (VeE =
10 V, Ie = 150 rnA, tp;;;; 12 ms, df;;;; 2%) ....................•...
Small-Signal Forward-Current Transfer Ratio
(f = 20 Mc/s, VeE
10 V, Ie
50 rnA) ....................
Gain-Bandwidth Product ........................................................
Output capacitance (VeB = 10 V, 1m
0) ........................
=
=
=
40 to 120
2.5 min
100
35 max
ht.
fT
Cobo
Mc/s
pF
2N699
TRANSISTOR
Si n-p-n planar triple-ditfused-base type used in small-signal and mediumpower applications in rf amplifier, mixer, oscillator and converter service
and in power applications in small-signal af amplifiers and switching cir~
cuits in industrial and military equipment. JEDEC TO-5, Outline No.3.
Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage (RIlE;;;; 10 n) ....................
Emitter-to-Base Voltage ..........................................................
Transistor Dissipation:
~~ ~~ ~ ~:g ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
PT
PT
PT
~Ci~~...~:~~~~~~~....::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
T:r(opr)
TSTG
TL
TA or Te above 2S·C ........................................................
Temperature Range:
Lead-Soldering Temperature (10 s max) ........................
120
80
5
VCBO
VeER
VEBO
V
V
V
0.6
W
2
W
See curve page 112
-65 to 175
-65 to 200
300
·C
·C
·C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie
1m
=
=
0.1 rnA,
0) ......................................................................................
Collector-to-Emitter Sustaining Voltage (RBE = 10 n,
Ie
100 rnA, tp ;;;; 300 p.s, df ::;; 2%) ............................
Collector-to-Emitter Saturation Voltage (Ie
150 rnA,
IB
15 rnA, tp ::;; 300 p.s, df ::;; 2%) .............................. ..
Base-to-Emitter Saturation Voltage (Ic
150 rnA,
IB
15 rnA, tp ;;;; 300 /LS, df ;;;; 2%) ................................
Collector-Cutoff Current (VeB
60 V, IE = 0) .......... ..
Emitter-Cutoff Current (VEB
2 V, Ie = 0) ................
Static Forward-Current Transfer Ratio (VeE
10 V,
Ie
150 rnA, tp ::;; 300 p.s, df ::;; 2%) ............................
Small-Signal Forward-Current Transfer Ratio:
VeE
5 V, Ie
1 rnA, f = 1 kc/s ............................
VeE = 10 V, Ie
5 rnA, f = 1 kc/s ..........................
VCE
10 V, 10
50 rnA, f = 20 Mc/s ........................
Gain-Bandwidth Product ........................................................
Output capacitance ,(VCB = 10 V, 1m
0) ......................
Small-Signal Short-Circuit Impedance:
VeE = 5 V, Ie
1 rnA, f
1 kc/s ............................
VeE = 10 V, Ie
5 rnA, f
1 kc/s ..........................
Voltage-Feedback Ratio:
VCE
5 V, Ic
1 rnA, f = 1 kc/s ............................
VCE
10 V, Ic
5 rnA, f
1 kc/s ..........................
Output Conductance:
VOE = 5 V, Ic = 1 rnA, f
1 kc/s ............................
VOE
10 V, Ic
5 rnA, f
1 kc/s ..........................
Thermal Resistance, Junction-to-Case ................................
Thermal Resistance, Junction-to-Ambient ........................
=
=
=
=
=
=
=
=
=
=
==
==
=
==
==
=
==
=
=
=
=
==
COMPUTER TRANSISTORS
V(BR)CBO
120 min
V
VeER (sus)
80 min
V
VCE(sat)
5 max
V
VBm(sat)
ICBo
ImBO
1.3 max
2 max
100 max
!LA
mE
120 max
hte
hte
hte
fT
Cobo
35 min
45 min
2.5 min
50 min
20 max
Mc/s
pF
hlb
hlb
30 max
lOmax
n
n
hrb
hrb
2.5 x 10-' max
3 x 10-' max
hOb
hOb
9s-e
9J-A
0.5 max
1 max
75 max
250 max
V
/LA
p,mho
~
·C/W
2N706
2N706A
Si n-p-n epitaxial planar types used in high-speed switching applications in
data-processing equipment. JEDEC TO-l8, Outline No.9. Terminals: 1 emitter, 2 - base, 3 - collector and case.
148
RCA Transistor Manual
2N706 2N706A
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................
Collector-to-Emitter Voltage (RBm == 10 0) •...
Emitter-to-Base Voltage ............................................
Collector Current ..........................................................
Tr~:~oD~8a~~~~:...................................................
To (With heat sink) up to 25·C ........................
TA or To (with heat sink) above 25·C ........... .
Temperature Range:
Operating (Junction) ..............................................
Storage .......................................•..................................
VOBO
VOER
VmBo
10
25
25
20
5
50
20
5
V
V
V
A
PT
PT
PT
0.3
0.3
W
1
1
W
See ourve page 112
TJ(opr)
TSTo
175
175
-65 to 175
VeE (sat)
0.6
0.6 max
VBm(sat)
0.9
0.9 max
V
lOBO
leBO
0.5
30
0.5 max
30 max
I'A
I'A
hFE
hFE
20
20 to 60
-min
hfe
hfe
2
-min
2 min
Cobo
6
5 max
pF
to + tr
40 max
ns
+ tr
75 max
ns
25 max
os
·C
·C
CHARACTERISTICS
Coilector-to-Emitter Saturation Voltage:
(Ie = 10 rnA. Is == 1 rnA) ................................... .
Base-to-Emitter Saturation Voltage:
coH~~r~g~~ ~u~e~t~) ....................................
VeB = 15 V. IE == G. TA = 25·C ........................
VeB == 15 V. IE == O. TA
150·C ....•...................
Static Forward-Current Transfer Ratio:
VOl. == 1 V. 10 == 10 rnA ........................................
Vom
1 V. Ie == 10 rnA. tp ;;:a 12 IJlll. df ;;:a 2%
Small-Signal Forward-Current Transfer Ratio:
Vem
15 V. Ie == 10 rnA. f == 100 Mo/s ........
Vem = 10 V. Ie = 10 rnA. f
100 Mc/s ....... .
Output Capacitance (f == 0.14 Mc/s. VeB == 5 V.
1m == 0) ....................................................................... .
Turn-On Time (Veo
3 V. Ie = 111 rnA,
IBl
3 rnA. IBo
-1 rnA) ................................
Turn-Off Time (Vee
3 V. Ie
19 rnA.
3 rnA. Is.
-1 rnA) .....•.....•....................
IBl
Storage Time (Veo = 10 V. Ie = 10 rnA.
IBl = 10 rnA. lB. = -10 rnA. HI. = 1000 0) ....
=
=
=
=
==
==
=
=
=
2N708
t.
t.
V
COMPUTER TRANSISTOR
Si n-p-n pIaDar double-diffused-junction type used in high-speed switching
applications in data-processing etluipment. JEDECl TO-IS, Outline No.9.
Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
..························..··············..........
40
g~~~:~~'h;;o~~e:
VeBO
RBIII;;:a100 ..............................................................................
Base open ................................................................................. .
Emitter-to-Base Voltage ........................................................
Collector Current ....•.......................•....................•...•..................
Transistor Dissip,atlon:
TA up to 25 C ........................................................................
20
VemR
15
Vemo
VIIIBO
5
Limited by dissipation
~~ ~~ ~ 2:~v~···25·C···::::::::::::::::::::::::::::::::::::::::::::::::::::::.::
Temperature Range:
Operating (Junction) ........................................................... .
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ....................... .
CHARACTERISTICS
=
Collector-to-Base Breakdown Voltage (10
0.001 rnA.
1m
0) ........................................................................................
Emitter-to-Base Breakdown Voltage (1m
0.01 rnA.
10
0) ........................................................................................
Collector-to-Emitter Sustaining Voltage (RBm :s; 10 O.
Ie
30 rnA. tr
1 ns. tp ;2: 300 ns. df :s; 2%) ...... ..
Collector-to-Emitter Sustainmg Voltage With Base .
()Pen (10 == 311 rnA. tr
1 ns. t p ~ 300 ns. df :s; 2%)
Colfector-to-Emitter Saturation Voitage (10
fij rnA.
Is = 1 rnA) ..............................................................................
Base-m-Emitter Saturation Voltage (Ie = 10 rnA.
Is = 1 rnA) ........................................................................... .
Collector-Cutoff Current:
VeB
20 V. 1m
O. TA == 25·C ........................................
VeB = 20 V. 1m = O. TA = 150·C ......................................
=
=
=
=
=
=
=
=
=
PT
PT
PT
V
V
V
V
0.36
W
1.2
W
See curve page 112
-65 to 200
-65 to 300
300
·C
·C
·C
V(BB)eBO
40 min
V
V(BR)mBO
5 min
V
VemR(sus)
20 min
V
Vemo(sus)
15 min
V
VCE(sat)
0.4 max
V
VBIII(sat)
0.72 to 0.8
V
leBO
lOBO
0.025 max
15 max
I'A
p.A
TJ(opr)
TSTo
TI.
Technical Data for RCA Transistors
149
CHARACTERISTICS (cont'd)
==
Emitter-Cutoff Current (VES == -4 V, Ie
0) ............
Collector Current for forward bias (VBE
0.25 V,
VCB
20 V, TA
125°C) ....................................................
Static Forward-Current Transfer Ratio:
VeE = 1 V, Ie = 0.5 rnA ................................................. ...
VeE
1 V, Ie = 10 rnA ....................................................
Small-Signal Forward-Current Transfp.r Ratio
(VeE = 10 V, Ie
10 rnA, f = 100 Mc/s) ................
Output Capacitance (VeB
10 V. J..
0,
f = 0.14 Mc/s) ........................................................................
Base Spreading Resistance (f = 300 Mc/s, VeE
10 V,
10 = 10 rnA) ............................................................................
Storage Time (Vee = 10 V, Ie = 10 rnA, lBl = 10 rnA,
lB,
-10 rnA, RL
1000 0) ............................................
Thermal Resistance, Junction-to-Case ..............................
Thermal Resistance, Junction-to-Ambient .......................•
=
=
=
=
=
=
=
=
lEBO
O.OSmax
,.A
IeEv
lOmax
,.A
hFE
hFE
15 min
30 to 120
h ..
3 min
Cobo
6 max
=
pF
50 max
o
25 max
145 max
480 max
ns
°C/W
°C/W
2N709
COMPUTER TRANSISTOR
Si n-p-n epitaxial planar type used in switching applications in data-processing equipment. JEDEC TO-IS, Outline No.9. Terminals: I - emitter, 2 base, 3 - collector and case. This type is identical with type 2N2475 except
for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (Ie = 3 rnA,
lB = 0.15 rnA) ....................................................................... .
Base-to-Emitter Saturation Voltage (Ie
3 rnA,
_ IB
0.15 rnA) ..........................•............................................•
Pulsed Static Forward-Current Transfer Ratio:
Ie = 10 rnA, VeE = 0.5 V, TA = 25°C ........................... .
Ie = 30 rnA, VeE = 1 V, TA = 25°C ........................... .
Ie
10 rnA, VeE = 0.5 V, TA
-55°C ...................... ..
Small-Signal Forward-Current Transfer Ratio
(Ie
5 rnA, VeE = 4 V, f
100 Mc/s) ....................... .
Input Capacitance (VEB = 0.5 V, Ie
0, f
140 kc/s)
Output Capacitance (VeB = 5 V, IE
0, f
140 kc/s)
Storage Time (Ie = 5 rnA, lBl
5 rnA, lB, = -S rnA,
Vee = 3 V) ..............................................................................
Turn-On Time (Ie
10 rnA, lBl
2 rnA, lB,
-1 rnA,
Vee
1 V) ............................................................................. .
Turn-Off Time (10
10 rnA, lBl = 2 mA, lB,
-1 rnA,
Vee = 1 V) ............................................................................ ..
=
=
=
=
=
=
=
=
= =
=
=
=
=
=
=
=
VCE(sat)
0.3 max
V
VBE(sat)
O.SSmax
V
hFE (pulsed)
hFE (pulsed)
hn (pulsed)
20 to 120
15 min
10 min
hf.
Clbo
Coho
t.
6 min
2 max
3 max
6 max
Mc/s
pF
pF
td+ tr
IS max
ns
t. + t,
15 max
ns
2N718A
COMPUTER TRANSISTOR
Si n-p-n planar triple-diffused-junction type used primarily for small-signal
and switching applications in data-processing equipment. JEDEC TO-IS,
Outline No.9. Terminals: I - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage:
Base open ..................................................................................
RBE ~ 10 0 ............................................................................. .
Emitter-to-Base Voltage ....................................................... .
Transistor Dissipation:
TA up to 2SoC ..........................................................................
Te up to 25°C ..........................................................................
TA or Te above 25°C ....................................................... .
Temperature Range:
~&,~i~~~....~~~~~.~~~~!.... ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Lead-Soldering Temperature (10 s max) ...................... ..
CHARACTERISTICS
=
Collector-to-Base Breakdown Voltage (Ie
0.1 rnA,
IE = 0) ........................................................................................
Emitter-to-Base Breakdown Voltage (IE = 0.1 rnA,
Ic == 0) ...............\........................................................................
VeBO
75
V
VCEO
VCER
VEBO
32
SO
7
V
V
V
PT
PT
PT
TJ(opr)
O.S
W
1.S
W
See curve page 112
-65 to 200
-65 to 200
300
·C
°C
°C
V~~~&lCfJlVEg~SE INPUT;
FREQUENCY (f )'100 M c/.
COLLECTOR-TO-EMITTER VOLTS (VCE)'4
~
FREE-AIR TEMPERATURE
(TFN"25°C
/
5
o
I
I
"
~
"-'\
10
20
30
40
COLLECTOR MILLIAMPERf.:~ {Irl
',r':;}-I2.B46T
30
V
15
C
3
V
Limited by
power dissipation
200
mVi
300
mW
See curve page 112
-65 to 200
-65 to 200
230
·C
·C
·C
RCA Transistor Manual
154
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = 0.001 rnA.
IE = 0) ........................................................................................
Emitter-to-Base Breakdown Voltage (IE
0.01 rnA.
Ie
0) ••......•....••....••••..••.•••••••.•...•...••....•.•.••••••••••••.•••••.•••....••••.•••
Collector-to-Emitter Sustaining Voltage (Ie
3 rnA.
In
O. t p = 300 ,}lS. df
1%) ............................................
Collector-to-Emitter Saturation Voltage (Ie
3 rnA.
IR
0.15 rnA) .....................•..................................................
Base-to-Emitter Saturation Voltage (Ie
3 rnA.
IR
0.15 rnA) .................•......................................................
Collector-Cutoff Current:
VCR
15 V. IE
O. T ..
25·C .............•..........................
VCB = 15 V. IE = O. TA = 150·C ......................................
Static Forward-Current Transfer Ratio (VeE
1 V.
Ie
3 rnA) .......................•......................................................
Small-Signal Forward-Current Transfer Ratio·
(VeE
10 V. Ie
4 rnA. f
100 Mc/s) ....................
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
InF~ ~~pa~itrn~:/s~V~~...~ ..~:~.. ~:...~~..: ..~: ........................
°f~to~af:ct~~i!) (~~~ ..~.. ~~ ..~: ..~~ ..~.. ~:........................
Collector-to-Base Time Constant:·
VCR
10 V. Ie
4 rnA. f
40 Mc/s ........................
VCR = 10 V. Ie = 4 rnA. f == 40 Mc/s ........................
Small-Signal Power Gain. Unneutralized Amplifier
Circuit:·
VeE
10 V. Ie = 5 rnA. f = 200 Me/s ....................
VeE = 10 V. Ie
5 rnA. f
200 Me/s ....................
Power Output in Oscillator Circuitt (VeB
15 V.
Ie
8 rnA. f = 500 Mc/s ....................................................
Noise Figuret (VeE
6 V. Ie
1 rnA. HG
400 n.
f
60 Me/s) ............................................................................
=
=
=
=
=
=
=
=
=
=
=
=
V(BR)CBO
30 min
V
V(BR)EBO
3 min
V
15 min
V
VeE (sat)
0.5 max
V
VRE(sat)
0.87 max
V
IeRo
IeRo
0.001 max
0.1 max
p.A
p.A
hFE
20 to 200
VeEo(sus)
hr.
5 min
elbo
1.6 max
pF
Cobo
1.7 max
pF
rb'Cc
rb'Ce
30 typ
75 max
ps
ps
Gp.
Gp.
11.5 typ
9 min
dB
dB
Pob
10 min
mW
NF
6 max
dB
• Fourth lead (case) grounded.
t Fourth lead (case) floating.
2N918
TRANSISTOR
Si n-p-n epitaxial planar type used in low-noise amplifier, oscillator, and
converter applications at vhf frequencies. JEDEC TO-72, Outline No.23.
Terminals: 1 - emitter, 2 - base, 3 - collector, 4 - connected to case. This
type is identical with type 2N3600 except for the following items:
MAXIMUM RATINGS
Collector Current ...................................................•.... _..............
Ie
50
rnA
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio·
(f = 100 Mc/s. VeE
10 V. Ie
4 rnA) ..............•.....
=
.
=
.::
l:~tc:J:~~~:~t~\:-~:~o7- ~~~:~~:~~.v:;~.~
IE == 0) ........................................................................................
Collector-to-Base Time Constant· (f
40 Me/s.
VCR = 6 V. Ie = 2 rnA) ........................................................
Small-8ignal Power Gain:·
Unneutralized Amplifter Circuit (VeE = 10 V.
Ie == 5 rnA. f = 200 Mc/s) ............................................
Neutralized Amplifter Circuit (VeE
12 V.
Ic
6 rnA. f = 200 Me/s) ............................................
Power Output. Oscillator Circuit (VeE = 10 V.
IE = 12 rnA. f = 500 Mc/s) ................................................
=
=
• Fourth lead (case) grounded.
t Fourth lead (case) floating.
=
hro
6 min
Clbo
CObo
2 max
pF
3 max
pF
15
ps
G p•
13
dB
Gp.
15 min
18 typ
30 min
roW
n'C.
Po.
dB
dB
155
Technical Data for RCA Transistors
2Nl010
TRANSISTOR
Ge n-p-n alloy-junction type used in small-signal low-noise af amplifier
applications such as high-fidelity amplifiers, tape-recorder amplifiers, microphone preamplifiers, and hearing aids. JEDEC TO-I, Outline No.1.
Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ..................................................
Emitter-to-Base Voltage ..........................................................
Collector Current .....•..................................................................
Emitter Current ..........................................................................
Transistor Disswation:
TA up to 55 C ........................................................................
T~le~~~;~e (~&T~nt)
............................................................
Storage •.......................................................................................
Lead-Soldering Temperature (10 s max) ........................
CHARACTERISTICS
==
Collector-Cutoff Current (VCB == 10 V. 1m
0) ............
Emitter-Cutoff Current (VEB == 2.5 V. Ic
0) ............
Small-Signal Forward-Current Transfer Ratio
(VCE == 3.5 V. IE == -0.3 mAo f
1 kc/s) ..................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCB == 3.5 V. Ic
0.3 mAl ........................
Noise Figure (VCE
3.5 V. b == -0.3. Ro == 1000 n.
integrated noise bandwidth == 15 kc/s) .......................•
=
=
=
Vcno
VCEO
VEno
Ie
1m
PT
TA(opr)
TSTG
TL
ICBo
lEBO
hf.
10
10
10
2
-2
V
V
V
mA
rnA
20
mW
55
-65 to 85
255
·C
lOmax
6 max
pA
pA
·C
·C
35
fhfb
2
Mc/s
NF
5
dB
2Nl023
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-44, Outline No.14. Terminals:
1 - emitter, 2 - base, 3 - collector, Center Lead - interlead shield and case.
For collector-characteristics curves and video-amplifier circuit, refer to type
2N274.
MAXIMUM. RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage (VBE == 0.5 V) ................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Emitter Current ......................................................................... .
Transistor Dissip,ation:
TA up to 25 C ........................................................................
TA above 25·C ....................................................................... .
Tc up to 25·C (with heat sink) ....................................
Tc above 25·C (with heat sink) ....................................
Ambient-Tem12erature Range:
Operating (TA) and Storage (TsTo) ..............................
CHARACTERISTICS
=
Collector-to-Base Breakdown Voltage (Ie
-50 pA.
IE == 0) ......................................................................................
Collector-to-Base Reach-Through Voltage
(VEB == -0.5) ....................................................................... .
Collector-Cutoff Current (VCB == -12 V. b== 0) ....... .
Emitter-Cutoff Current (VEB == -0.5 V. Ic == 0) ........... .
Small-Signal Forward-Current Transfer Ratio
(VCE
-12 V. b
1.5 mAo f
1 kc/s) ................
Small-Signal Forward-Current Transfer Ratio Cutoff
Frequency (VCB == -12 V. IE = 1.5 mAl ................... .
Output Capacitance (VCB
-12 V. IE == 0) ................... .
Input Resistance (ac output circuit shorted):
VCB
-12 V. IE == 1.5 mAo f
50 Mc/s ................... .
VCE = -12 V. IE = 1.5 mAo f
30 Mc/s ................... .
Output Resistance (ac input circuit shorted):
VCB = -12 V. IE == 1.5 mAo f = 50 Me/s •...................
VCE == -12 V. IE == 1.5 mAo f
30 Mc/s ....................
=
=
=
=
=
Vcno
VCEV
VEBO
Ie
IE
PT
PT
PT
PT
-40
-40
-0.5
-10
10
V
V
V
mA
mA
120
mW
See curve page 112
240
mW
See curve page 112
-65 to 100
·C
V(BR)CBO
-40 min
V
VRT
leBo
lEBO
-40 min
-12 max
-12 max
V
p,A
,LA
hfe
20 to 175
f.f.
120
3 max
Mc/s
pF
n
n
n
n
Cobo
=
=
Rle
Rle
25
100
=
Roe
Roe
8000
8000
156
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Power Gain. Single-Tuned Unilateral Circuit):
VeB
-12 V. IE
1.5 mAo f
50 Mc/s ...............•....
VeE = -12 V. IE
1.5 rnA. f
30 Mc/s ................... .
Thermal Resistance. Junction-to-Case ................................
Thermal Resistance. Junction-to-Ambient ........................
=
=
=
=
=
18 to 24
dB
20 to 26
dB
0.31 max 'C/mW
0.62 max 'C/mW
TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT
DC Collector-to-Emitter Voltage ........................................
DC Emitter Current ................................................................ ..
g~!i~~r~:::i:::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Puise Rise Time ........................................................................ ..
Voltage Gain .............................................................................. ..
Maximum Peak-to-Peak Output Voltage ........................
2Nl066
VeE
IE
Rs
tr
-12
5.8
150
16
20 cis to 11 Mc/s
0.032
26
20
V
rnA
n
pF
~
V
TRANSISTOR
Ge p-n-p alloy-junction drift.field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-33, Outline No.lO. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - case and interlead shield. This type
is electrically identical with type 2Nl023.
2Nl090
COMPUTER TRANSISTOR
Ge n-p-n alloy-Junction type used in high-current medium-speed switching
circuits in electronic computers. JEDEC TO-5, Outline No.3. Terminals:
1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector-to-Emitter Voltage:
VBE = -1 V ........................................................................... .
Base open ..................................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Emitter Current ........................................................................ ..
Transistor Dissipation:
TA.
25'C ................................................................................
TA.
55'C .............................................................................. ..
TA.
71'C ................................................................................
=
=
=
T~te~~~l~e (~&f~nt)
............................................................
Storage ...................................................................................... ..
CHARACTERISTICS
=
Collector-to-Base Breakdown Voltage (Ie
25 p.A.
IE
0) •...••..•••...••.•••.••••••.•••.••••.••.•••...•.••.•.•..•.••......•••.•..•••.•.•..••.•
Collector-to-Emitter Breakdown Voltage (Ie
600 Jl.A.
Is = 0) ......................................................................................
Emitter-to-Base Breakdown Voltage (IE
25 Jl.A.
10
0) ......................................................................................
=
=
=
=
BYoe-;,o2~:tr I~o,;tae.~~ rnA ............................................... .
Ie = 200 rnA. Is == 10 rnA ............................................... .
Collector-to-Emitter Saturation Voltage:
10 = 20 rnA, Is == 0.67 mA ............................................... .
Ie
200 rnA. IB
10 mA ............................................... .
Emitter-to-Base Reach-Through Voltage
(VBE == -1 V) ....................................................................... .
Collector-Cutoff Current (VOB = 12 V. IE
0) ........... .
Emitter-Cutoff Current (VES == 5 V. Ie
0) .............. ..
Static Forward-Current Transfer Ratio:
VeE == 0.2 V. Ie
20 rnA ................................................
VeE == 0.3 V. Ie
200 mA ..............................................
Small-Signal Forward-Current Transfer-Ratio
Cutoff Frequency (VeB == 6 V. IE = -1 mAl •...........
Output Capacitance (Veil
6 V. IE
0) ........................
Stored Base Charge (Ie
20 mAo Is
1.33 mAl ........
=
=
==
=
=
==
==
VeBO
25
V
VCEV
VeEo
VEBO
10
IE
18
15
20
400
-400
V
V
V
mA
rnA
120
35
10
mW
mW
mW
TA.(opr)
TSTG
85
-65 to 85
'C
'C
PT
PT
PT
V- COMMON-EMITTER
CIRCUIT. &ASE INPUT.
AMBIENT TEMPERATURE -25·C
~ -3
f
VeBo
IE
Rio
Roe
MAG
gm
Ilr
BASE
~ERES.-IO-
-0.51 ~
o
-2
-4
-6
-8
-10
-12
-14
-16
-18
COLLECTOR-TO-EMITTER VOLTS
TRANSISTOR
-20 -22 -24 -26
92CM-IOZOOT1
2Nl178
Ge p-n-p alloy-junction drift-field type used in radio-frequency oscillator
applications in FM and AM/FM radio receivers. JEDEC TO-45, Outline
No.15. Terminals: 1 - emitter, 2 - base, 3 - interpin shield and case, 4 - col-
160
RCA Transistor Manual
lector. This type is identical with type 2N1177 except for the following
items:
CHARACTERISTICS
Small-Signal Forward-.Current Transfer Ratio
(VeE = -6 V, Ie
-1 rnA, f = 1 kc/s) ........................
=
hr.
40 to 275
TYPICAL OPERATION
Frequency ......................................................................................
DC Collector-to~Base Voltage ............................................... .
DC Emitter Current ................................................................... .
Extrinsic Transconductance ................................................... .
Collector Output Capacitance ............................................. ...
2Nl179
f
Veno
IE
goo
Cobo
10.7
-11
2.5
21800
2
Mc/s
V
rnA
pmhos
pF
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in radio-frequency mixer applications in FM and AM/FM radio receivers. JEDEG TO-45, Outline No.15.
Terminals: 1 - emitter, 2 - base, 3 - interpin shield and case, 4 - collector.
This type is identical with type 2N1177 except for the following items:
CHARACTER ISTICS
Small-Signal Forward-Current Transfer Ratio
(VeE = -6 V, Ie
-1 rnA, f = 1 kc/s) ........................
=
hre
40 to 275
TYPICAL OPERATION
Frequency ........................................................................................
DC Emitter Current ..................................................................
Input Resistance (ac output circuit shorted) ............... .
Output Resistance· (ac mput circuit shorted) ........... .
Maximum Available Conversion Power Gain ................
RMS Base-to-Emitter Oscillator-Injection Voltage ... .
Extrinsic Conversion Transconductance ........................... .
• At intermediate frequency of 10.7 Mc/s.
2Nl180
f
IE
Ric
Roe
100
0.8
40
90000
17
125
7500
Mc/s
rnA
Q
n
dB
mV
pmhos
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in intermediate-frequency amplifier applications in FM and AM/FM radio receivers. JEDEC TO-45,
Outline No.15. Terminals: 1 - emitter, 2 - base, 3 - interpin shield and case,
4 - collector. This type is identical with type 2N1177 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage
-0.5
V
100
Mc/s
10.7
-12
325
24000
40250
Mc/s
V
/'mhos
MAG
35
dB
MUG
MUG
23
20
dB
dB
VEBO
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio
Cutoff Frequency (Ven
-12 V, Ie
-1 rnA)
=
=
fIlfb
TYPICAL OPERATION
Frequency ..................................................................................... .
DC Collector-to-Emitter Voltage ....................................... .
Input Resistance (ac output circuit shorted) ............... .
Output Resistance (ac input circuit shorted) ............... .
Extrinsic Transconductance ....................................................
Power ·Gain:
Maximum available ..............................................................
Maximum useful:
Circuit neutralized ............................................................
Circuit unneutralized ........................................................
f
VeEo
Rle
Roe
gm
Q
n
Technical Data for RCA Transistors
161
2Nll83
2Nll83A
2Nl183B
POWER TRANSISTORS
Ge p-n-p alloy-junction types intended for use in intermediate-power switching and low-frequency amplifier applications in industrial and military
equipment. JEDEC TO-B, Outline No.5. Terminals: 1 - emitter, 2 - base,
3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ......
Collector-to-Emitter Voltage:
VBE = 1.2 V............................
RBE
0 ....................................
Base open ................................
Emitter-to-Base Voltage ..........
Collector Current ........................
Emitter Current ..........................
Base Current ................................
Transistor Dissipation:
TA up to 25°C ..........................
TA above 25°C ........................
Te up to 25°C
(with heat sink) ................
Te above 25°C
(with heat sink) ................
Temperature Range:
Operating (Ambient) ............
Storage ......................................
=
VenD
2N1183
-45
2N1183A
-60
VeEv
VeEs
VeEo
VEBO
Ie
IE
In
-45
-35
-20
-20
-3
3.5
-0.5
-60
-50
-30
-20
-3
3.5
-0.5
PT
PT
1
PT
7.5
PT
2N1183B
-80
V
-80
-60
-40
-20
-3
3.5
-0.5
V
V
1
1
See curve page 112
W
7.5
7.5
V
V
A
A
A
w
See curve page 112
TA(opr)
TSTG
·c
-65 to 100
-65 to 100
·C
CHARACTERISTICS
Collector-to-Emitter Voltage:
Ie
-50 mAo RnE = 0 ....... .
VBE = 1.2 V. Ie = -250 rnA
Ie
-50 rnA. In
0 ....... .
Emitter-to-Base Voltage:
(VeE
-2 V. Ie
-400 mAl
Collector-Cutoff Current:
VeB = -1.5 V. 1m = 0 ........... .
VeB = -45 V. IE = 0 ........... .
VeB
-60 V. IE _ 0........... .
Ven = -80 V. 1m = 0 ........... .
Emitter-Cutoff Current
(VEB
-20 V. Ie = 0)
=
=
VeES
VeEv
VeEo
-35 min
-45 min
-20 min
1.5 max
1.5 max
1.5 max
V
leBo
leBO
leBo
leBo
-30 max
-250 max
-30 max
-30 max
/LA
/LA
lEBO
-100 max -100 max
=
=
=
-50 min
-60 min
-30 min
-250 max
-60 min
-80 min
-40 min
-250 max
-100 max
TYPICAL COLLECTOR CHARACTERISTICS
I
2N 838
COMMON-EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE' 2S"C
WITH HEAT SINK.
TYP~
...a:en
I~
~
~-500
-10
:I
:E -400
I-- l--::: I::::
!:::::
~ 1====-8
L--- -7
~
-6
t::- _!:=-~-5
:....-- :::::t:=~ ~ ~ f.-- L---l--i~3
~-30o V:::: ::::~ ::::: ~ ::::I-- ~~
o
---I-RES--I
a:
?:::; ~
...J
...J
u -200 -
Y
-10O~
--- - -
I-- r--
o
~
.
~ :--
~
k-- t -
~
~
~
~
1
~,!!lJ:.!:!A~
~
1
1
~
COLLECTOR-TO-EMITTER VOLTS
92CM-I0425TI
V
V
V
/LA
/LA
/LA
RCA Transistor Manual
162
CHARACTERISTICS (cont'd)
Static Forward-Current
Transfer Ratio (VCID == -2 V,
Ic
-400 mA) ...................... hFID
Small-Signal Forward-Current
Transfer-Ratio Cutoff
Frequency (VCB
--6 V,
lID == 1 InA) ............................ fhfb
Collector Saturation
Resistance (10 = -400 mA,
lB == -40 mA) ....................... .
Thermal Resistance,
Junction-to-case ...................... eJ-C
Thermal Resistance,
Junction-to-ambient .............. e'-A
2N1183
2N1183A
2N1l83B
20 to 60
20 to 60
20 to 60
0.5 min
0.5 min
0.5 min
1.25 max
1.25 max
1.25 max
n
lOmax
lOmax
lOmax
·C/W
75 max
75 max
75 max
·C/W
=
=
Mcls
TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT
gg
::::..~:~!:W:g~. .::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::~;~
"On" DC Collector Current .................................................... lc
"Turn-On" Base Current ........................................................ lBl
"Turn-Off" Base Current ........................................................ lB.
Generator Resistance ................................................................ RG
e ..::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::~~
Storage Time ................................................................................ t.
Fall Time ....................................................................................:... tf
=yTfi:
V
V
rnA
rnA
rnA
-12
12
-400
-40
40
50
0.2
2
1.8
1.4
n
p.S
p.S
p.S
ps
TYPICAL COLLECTOR CHARACTERISTICS
I
TYPE 2NII83B
COMMON-EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE. 2S·C
WITH HEAT SINK.
!
IL
-2.5
I
:IE
-160
-140
-120
-100
c(
a::
-2
~~
-1.5
I"
~--
~f.-(
-80
-60
...J
*.'<10
8
I
I
~ 2& (II-.
~rlST·7.5
:;.~
I
-40
-20
-0.5 ' - - BASE MILLIAMPERES--
o
-2
-4
-6
-B
-10
-12 -14 -16
-18 -20
COLLECTOR-TO-EMITTER VOLTS
92CM-I0440TI
TYPICAL TRANSFER CHARACTERISTIC
TYPE 2NII83B
COMMON-EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE-2S·C
WITH HEAT SINK.
~
-2
/
~ -1.5
c(
B~u_
I
/
o.s
o
./
V
/
82
o-..4.--...L---.........-!11
+
V
0.5
92CS-I0457RI
I
1.5
2
2.5
EMITTER-TO-BASE VOLTS
'2CS-I04ml
B1. B. == 12 volts
C, = 10 p.F. electrolytics. 25 volts
R1 == 51 ohms, 2 watts
& == 120 ohms. 2 watts
R. == 230 ohms, I watt
RI.
29.5 ohms, 5 watts
=
163
Technical Data for RCA Transistors
2Nl184
2Nl184A
2Nl184B
TRANSISTORS
Ge p-n-p alloy-junction type intended for use in intermediate-power switching and low-frequency amplifier applications in industrial and military
equipment. JEDEC TO-8, Outline No.5. Terminals: 1 - emitter, 2 - base,
3 - collector and case. These types are identical with types 2N1183, 2N1183A,
and 2N1183B, respectively, except for the following items:
CHARACTERISTICS
Static Forward-Current Transfer Ratio
(VeE
= -2 V.
Ie
= -400 rnA)
.................................... hFE
2N1184
2N1184A
2N1184B
40 to 120
40 to 120
40 to 120
TYPICAL COLLECTOR CHARACTERISTICS
r
I
TYPE 2NII848
COMMON-EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE'2S"C
WITH HEAT SINK.
f30:
OJ
Q.
-5
~~~-4J;
~-SOO
_
C:::--3 .5
I--- I-:::::: ~ ~E::=i--"4
::;
oJ
:e-400
0:
o
t;
-300
OJ
oJ
oJ
e::
-3
t:::= 1---1---- 1.5
~~ ~
:::..- I==- E:::=~~~.
~ I---
~f-- I----~)5
I---- C:::
I---~ - EIlEs o - 0.
l--l--~~
~
L--
8 -200 l
100-100
- t:::
l:::= I:==-
'--
L-- l--- ~
o
~
~
~
~
~
~
~
~
~
~
COLLECTOR-TO-EMITTER VOLTS
92CM-lon8TI
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2NII848
COMMON-EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE' 25"C
WITH HEAT SINK.
.,
OJ
~-2.S
~
0:
~
~-I-"(j,
:::I- U5
~.p
"-"/~ 1
8
o
-~~O
-40
30
-20
8 ,047:
I
-0.5
-100
1--9<1.BO
-10
...
=.....:~
-2
I
II
1~(W"r
BASE MILLIAMPERES·-!r
~
~
~
~
~
1
-10
-7.5
~
~
~
COLlEClOR-TO-EMITTER VOLTS
~
92CM-I0439TI
164
RCA Transistor Manual
2N1224
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-33, Outline No.l0. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - interlead shield and case. This type
is electrically identical with type 2N274.
2N1225
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-33, Outline No.l0. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - interlead shield and case. This type
is electrically identical with type 2N384. For collector-characteristics curves
and video-amplifier circuit, refer to type 2N274.
2N1226
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-33, Outline No.l0. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - interlead shield and case. This type
is identical with type 2N274 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector-to-Emitter Voltage (VBE : 0.5 V) ................
VCBO
VCEV
-60
-60
V
V
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ic: -50 p,A.
IE = 0) ........................................................................................
Collector-to-Emitter Reach-Through Voltage
(VEB
-0.5 V) ......................................................................
=
2N1300
V~~~~:.................................................................
TA above 25.C ........................................................................
Temperature Range:
Operating (Junction) ............................................................
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
25
25
0.3
VeBO
VEDO
Ie
V
V
A
PT
PT
150
mW
See curve page 112
TJ(opr)
TSTG
TL
-65 to 85
-65 to 100
230
·C
·C
·C
VeE (sat)
VBE
VRT
leBO
lEBO
0.2 max
0.15 to 0.4
25 min
6 max
6 max
V
V
V
/loA
/loA
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (IB = 0.5 mA,
Ie
10 rnA) ............................................................................
Base-to-Emitter Voltage (lB = 0.5 rnA, Ie
0) ........
Collector-to-Emitter Reach-Through Voltage ................
Collector-Cutoff Current (VCB = 25 V, IE
0) ........
Emitter-Cutoff Current (VEB == 25 V, Ie
0) .......... ..
Static Forward-Current Transfer Ratio:
VeE
1 V, Ie = 10 mA ....................................................
VCE = 0.35 V, Ie
200 mA ............................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB
5 V, IE
-1 rnA) ............... ,...... ..
Output Capacitance (VCB
5 V, IE
0) ........................
=
=
==
=
=
= = =
2N1303
=
hFE
hFE
20 min
10 min
fhfb
3 min
20 max
Cobo
Mc/s
pF
COMPUTER TRANSISTOR
Ge p-n-p alloy-junction type used in medium-speed switching applications
in data-processing equipment. The 2N1303 is the p-n-p complement of the
n-p-n type 2N1302. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base and case, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Tr~~s::~to ~~·stf~~~~:.................................................................
. .: : : : : : : : : : : : : : : : : : : :
TA above 25·C ........................................................................
Temperature Range:
~fo';;,,~!n~... ~=~~~~~~
Lead-Soldering Temperature (10 s max) ........................
-30
-25
-0.3
VeBO
VEBO
Ie
PT
PT
~~~~pr)
TL
V
V
A
150
mW
See curve page 112
-65 to 85
-65 to 100
230
·C
·C
·C
-0.2 max
V
-0.15 to -0.4
-25 min
-&max
-'-6 max
/loA
/loA
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage
(IB
-0.5 rnA, Ie
-10 mA) ........................................
Base-to-Emitter Voltage (IB
-0.5 mA,
Ie
-10 mAl ........................................................................
Collector-to-Emitter Reach-Through Voltage ................
Collector-Cutoff Current (VeB = -25 V, IE = 0) ........
Emitter-Cutoff Current (VBB
-25 V, 10'
0) ........
Static Forward-Current Transfer Ratio:
VeE
-1 V, Ie
-10 mA ................................................
VeE
-0.35 V, Ie
-200 mA ........................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB
-5 V, IE
1 mA) ........................
Output Capacitance (VeB = -5 V, IE
0) ....................
=
=
=
=
=
=
=
=
==
=
2N1304
=
=
VeE (sat)
VBE
VRT
leBO
lEBO
hFE
hFE
20 min
10 min
fhfb
3 min
20 max
Cobo
V
V
Mc/s
pF
COMPUTER TRANSISTOR
Ge n-p-n: alloy-junction type used in medium-speed switching applications
in data-processing equipment. The n-p-n construction permits complementary operation with a matching p-n-p type, such as the 2N1305. JEDEC
TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base and case, 3 - collector.
This type is identieal with type 2N1S02 except for the following items:
167
Technical Data for RCA Transistors
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (Is = 0.25 mA,
Ie = 10 mAl ........................................................................... .
Base-to-Emitter Voltage (Is = 0.5 mA, Ie = 10 mAl
Collector-to-Emitter Reach-Through Voltage .................
Static Forward-Current Transfer Ratio:
Vel' = 1 V, Ie = 10 mA ................................................... .
VeE = 0.35 V, Ie = 200 mA ............................................. .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB
5 V, IE
-1 mAl ....................... .
=
VBm
VRT
0.2 max
0.15 to 0.35
20 min
hFE
hFE
40 to 200
15 min
Vel' (satl
=
5 min
V
V
V
Mc/s
2N130S
COMPUTER TRANSISTOR
Ge p-n-p alloy-junction type used in medium-speed switching applications
in data-processing equipment. The 2N1305 is the p-n-p complement of the
n-p-n type 2N1304. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base and case, 3 - collector. This type is identical with type 2N1303 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (lB = -25 mA,
Ie = -10 mAl ...................................................................... ..
Base-to-Emitter Voltage (In = -0.5 mA,
Ie = -10 mAl ....................................................................... .
Collector-to-Emitter Reach-Through Voltage ................
Static Forward-Current Transfer Ratio:
VeE = -1 V, Ie = -10 mA ........................................... .
Vel' = -0.35 V, Ie = -200 mA ....................................... .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB
-5 V, IE
1 mAl ........................
=
Vel' (satl
VBm
VBT
-0.2 max
V
-0.15 to -0.35
-20 min
V
V
40 to 200
15 min
=
5 min
Mc/s
2N1306
COMPUTER TRANSISTOR
Ge n-p-n alloy-junction type used in medium-speed switching applications
in data-processing equipment. The 2N1306 is the n-p-n complement of the
p-n-p type 2N1307. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base and case, 3 - collector. This type is identical with type 2N1302 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (IB = 0.17 rnA,
Ie = 10 mAl ........................................................................... .
Base-to-Emitter Voltage (IB = 0.5 mA, Ie
10 mAl
Collector-to-Emitter Reach-Through Voltage ..................
Static Forward-Current Transfer Ratio:
VeE = 1 V, Ie = 10 mA ................................................... .
Vel' = 0.35 V, Ie = 200 mA ........................................... .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (Ven = 5 V, IE
-1 mAl ....................... .
=
=
VeE (sat)
VBE
VBT
0.2 max
0.15 to 0.35
15 min
hFE
hFE
60 to 300
20 min
flltb
10 min
V
V
V
Mc/s
2N1307
COMPUTER TRANSISTOR
Ge p-n-p alloy-junction type used in medium-speed switching applications
in data-processing equipment. The 2N1307 is the p-n-p complement of the
n-p-n type 2N1306. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base and case, 3 - collector. This type is identical with type 2N1303 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage
(IB
-0.17 mA, Ie
-10 mAl....................................
Base-to-Emitter Voltage (Is = -0.5 mA,
Ie = -10 mAl ........................................................................
Collector-to-Emitter Reach-Through Voltage ................
=
=
Vel' (satl
VnE
VRT
-0.2 max
V
-0.15 to -0.35
--15 min
V
V
168
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Static Forward-Current Transfer Ratio:
VCE
-1 V. Ic
-10 rnA ................................................
VCE = -0.35 V. Ie = -200 rnA ........................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCB = -5 V. IE = 1 rnA) ........................
=
=
2N1308
hFE
hFE
60 to 300
20 min
f"'b
10 min
Mcjs
COMPUTER TRANSISTOR
Ge n-p-n alloy-junction type used in medium-speed switching applications
in data-processing equipment. The 2N1308 is the n-p-n complement of the
p-n-p type 2N1309. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base and case, 3 - collector. This type is identical with type 2N1302 except for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage (lB = 0.13 rnA.
Ie
10 rnA) ........................................................................... .
Base-to-Emitter Voltage (lB = 0.5 rnA. Ie
10 rnA)
Collector-to-Emitter Reach-Through Voltage ............... .
Static Forward-Current Transfer Ratio:
VeE
1 V. Ie
10 rnA ................................................. ...
VCE
0.35 V. Ie
200 rnA ..............................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB = 5 V. IE
-1 rnA) ........................
=
=
=
=
==
=
2N1309
VCE(sat)
VBE
VRT
0.2 max
0.15 to 0.35
15 min
hFE
hFE
80 min
20 min
flo,.
15
V
V
V
Mejs
COMPUTER TRANSISTOR
Ge p-n-p alloy-junction type used in medium-speed switching applications
in data-processing equipment. The 2N1309 is the p-n-p complement of the
n-p-n type 2N1308. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base and case, 3 - collector. This type is identical with type 2N1303 except
for the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage
(IB = -0.13 rnA. Ie == -10 mAl ....................................
Base-to-Emitter Voltage (lB
-0.5 mAo
Ie = -10 mAl ....................................................................... .
Collector-to-Emitter Reach-Through Voltage ............... .
Static Forward-Current Transfer Ratio:
VCE
-1 V. Ic
-10 rnA ........................................... .
VCE = -0.35 V. Ie
-200 mA ........................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCB
-5 V. IE
1 mAl ....................... .
=
=
==
=
2N1358
=
-0.2 max
V
VBE
VRT
-0.15 to -0.35
-IS min
V
V
hFE
hFE
80 min
20 min
fhfb
15 min
VCE(sat)
Mcjs
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in industrial and military equipment requiring transistors
having high voltage, current, and dissipation values. It is used in powerswitching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency oscillator and audio-amplifier service. It is stud-mounted to provide
positive heat-sink contact. JEDEC TO-36, Outline No.H. Terminals: Lug
1 - base, Lug 2 - emitter, Mounting Stud - collector and case. This type is
identical with type 2N174 except for the following items:
CHARACTERISTICS (At case temperature
= 25°C)
Collector-to-Emitter Breakdown Voltage:
Ie
-0.3 A. lB := 0 ..............................................................
=
V(B)l)eEO
-40 min
V
169
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Collector-Cutoff Current:
VCR = -2 V, IE = 0, Te
25°C ..........................................
VCR = -30 V, IE = 0, Te
71°C ....................................
Emitter-Cutoff Current (VER = -30 V, Ie = 0,
Te = 71°C) ................................................................................
Static Forward-Current Transfer Ratio:
VCE = -2 V, Ie = -5 A ....................................................
VeE = -2 V, Ie
-5 A ....................................................
VeE = -2 V, Ie = -1.2 A................................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (Vcn = -12 V, Ie
-1 mA) ....................
==
=
=
leRo
leRO
-200 max
-6 max
p.A
mA
lEBO
-6 max
mA
hFE
hFE
hFE
25 min
35 typ
40 to 80
fh ..
100 min
kc/s
2N1384
COMPUTER TRANSISTOR
Ge p-n-p drift-field type used in switching applications in military and industrial electronic computers such as memory-core driver, pulse-amplifier,
inverter, flip-flop, and logic-gate circuits. JEDEC TO-ll, Outline No.7.
Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Voltage ................................................ ..
Emitter-to-Base Voltage" ...................................................... ..
Collector Current ...................................................................... ..
Emitter Current ........................................................................ ..
Transistor Dissipation:
TA up to 25°C ......................................................................... .
TA above 25°C ...................................................................... ..
Ambient-Temperature Range:
Operating (TA) and Storage (ToTG) .......................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
VCRO
VeEo
VERO
Ie
IE
PT
PT
TL
-30
-30
-1
-0.5
0.5
V
V
V
A
A
240
mW
See curve page 112
-65 to 85
255
'C
'C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = -50 p.A,
IE = 0) ......................................................................................
Collector-to-Emitter Breakdown Voltage (Vce = 30 V,
Ie = 250 mA, In
0, RRE
1000 0) .......................... ..
Emitter-to-Base Breakdown Voltage (IE = -100 p.A,
Ie = 0) ......................................................................................
Collector-to-Emitter Reach-Through Voltage ............... .
Base-to-Emitter Voltage (Ie = -200 mA,
In = -10 mA) ....................................................................... .
Collector-Cutoff Current (VCR = -3 V, IE
0) ........... .
Static Forward-Current Transfer Ratio (VCE
-0.5 V,
Ic = -200 mA) ......................................................................
=
=
==
-700
~
~
0:
i-400
"
::;
-'
:i-300
~
-30 min
V
-30 min
V
V(RR)ERO
RT
-1 min
-30 min
V
V
VBE
ICBO
-0.9 max
-8 max
V
p.A
hFE
20 min
TYPICAL COLLECTOR CHARACTERISTICS
-600
::I-500
V(BR)CBO
V(BR)CERL
TVPE2NI384
COMMON-EMITTER CIRCUIT,
BASE INPUT.
AMBIENT ~MPERATURE
(TA)a25 C
,'I-~
/
\, / '-~-8 I
Kr-l
It \ ~
1 :!.
V/" \ J!I~I~a240
TOR I)lSSlPA.TION
t;-200
'"
::l
'fI
8-100
BASE
o
-0.5
''b.:
--
j..-2
MILLIAM~ERES \(lala-II
-I
-L5
-2
-2.5
-3
COlLECTOR-TO-EMITTER VOLTS (VCE)
92CM·1058Ot
170
RCA Transistor Manual
CHARACTERISTICS (cont'd)
=
==
Gain-Bandwidth Product (VeE
-3 V, Ie
-10 mAl
iT
20 min
Mc/s
Stored Base Charge (Ie
-10 mA, IB
-1 mAl ....
Qs
800 max
pC
Thermal Time Constant ..........................................................
r(thermal)
14 min
ms
Thermal Resistance, Junction-to-ambient ........................
8J-A
250 max ·C/W
• This rating may be exceeded and the emitter-to-base junction operated in the
breakdown condition provided the emitter dissipation is limited to 30 milliwatts
at 25·C. For ambient temperature above 25·C, dissipation must be reduced by 0.5
milliwatts per ·C.
=
2N139S
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-33, Outline No.l0. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - interlead shield and case. This type
is identical with type 2N274 except for the following items:
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio
(VeE
-12 V, IE
1.5 mA, f
1 kc/s) ....................
=
=
=
50 to 175
hr.
TYPICAL COLLECTOR CHARACTERISTICS
TYPE '2N 1395
COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE' 211" C
::\-6
~
-50
~-II
3
i-4
II:
-40
1/,.
:!!!-
~-5
~
8-2 / '
BASE
MIC~AMJERES.-20
-10
II""""
o
-2
-4
-6
-B
-10
-12 -14
- - - - 16
18
COLLEC'IOR-TO-EMITTER 'IOLTS
2N1396
20
22
24-26
_ _,
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used inrfand if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in industrial and military equipment. JEDEC TO-33, Outline No.l0. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - interlead shield and case. This type
is identical with type 2N384 except for the collector-characteristics. curves,
which are the same as for type 2N1395, and the following items:
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio
(VeE
-12 V, IE
1.5 mA, f
1 kc/s) ....................
=
2N1397
=
=
hte
50 to 175
TRANSISTOR
Ge p-n-p alloy-junction drift-field type used in rf and if amplifier, oscillator,
mixer, and converter circuits, and low-level video-amplifier circuits in indus-
171
Technical Data for RCA Transistors
trial and military equipment. JEDEC TO-33, Outline No.10. Terminals:
1 - emitter, 2 - base, 3 - collector, 4 - interlead shield and case. This type
is identical with type 2NI023 except for the collector-characteristics curves,
which are the same as for type 2N1395, and the following items:
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio
(VCE = -12 V. IE = 1.5 mAo f = 1 kc/s) ....................
h,.
50 to 175
2N1412
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in a wide variety of switching and amplifier applications in industrial and military equipment requiring transistors
having high voltage, current, and dissipation values. It is used in powerswitching, voltage- and current-regulating, dc-to-dc converter, inverter,
power-supply, and relay- and solenoid-actuating circuits; and in low-frequency oscillator and audio-amplifier service. It is stud-mounted to provide
positive heat-sink contact. JEDEC 'TO-36, Outline No.ll. Terminals: Lug
1 - base, Lug 2 - emitter, Mounting Stud - collector and case. This type is
identical with type 2N174 except for the collector-characteristics curves,
which are the same as for type 2NllOO, and the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (VBE
= 1.5 V)
..........................
CHARACTERISTICS (At case temperature
=
=
=
=
V
-SO min
VBI'
VEB
VRT
-O.Smax
-1 max
-100rnin
V
V
V
V
V
ICBo
-4 max
rnA
= 25°C)
Collector-to-Emitter Breakdown Voltage:
Ic
-0.3 A. RBE
0 .......................................................... ..
Ic = -1 A. b = 0 ............................................................
Base-to-Emitter Voltage (VCE = -2 V. Ie = -5 A) .. ..
Emitter-to-Base Voltage (VCB
-100 V. IE = 0) ........
Collector-to-Emitter Reach-Through Voltage .............. ..
Collector-Cutoff Current:
VCB
-100 V. IE = O. Tc
25°C ................................ ..
=
-100
VCBO
V," Vi
I
KO
o
10
20
30
40
50
70
60
COlLEClOR- TO- EMITTER VOLTS
80
'2CM-I0411t2
CHARACTERISTICS (cont'd)
Collector-to-Emitter Saturation Resistance
(Ie
1.5 A, IR
300 rnA) ...............................................•
Static Forward-Current Transfer Ratio (VeEl = 4 V,
Ie
1.5 A) .............•.......................................................•.•......
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCR
12 V, Ie
100 mAl ........................
Output Capacitance (Ven
40 V, IE = 0) ................... .
Thermal Time Constant ............................................................
Thermal Resistance, Junction-to-Mounting Flange ....... .
=
=
=
=
reEl (sat)
= =
n
2 max
hFEl
15 to 45
fhfb
1
200
12
Cobo
r(thermal)
Mc/s
pF
ms
2.33 max
·C/W
V
V
ta
12
-8.5
50
1.5
300
-150
0.2
t.
1
8J-MF
TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT
DC Collector Supply Voltage ................................................
DC Base-Bias Voltage ............................................................
Generator Resistance ..................................................................
On DC Collector Current ..........................................................
Turn-On DC Base Current ......................................................
Turn-Off DC Base Current ....................................................
Delay time ....................................................................................
Rise time ........................................................................................
Storage time ..................................................................................
Fall time ..........................................................................................
300
!
'N
250
II!
5
200
3150
loO
o
TYPE2NI487
COMMON-EMITTER
CIRCUIT, BASE INPUT.
COllECTOR-TO-EMITTER
VOLTS' 4
MOUNTINGFLANGE
TEMP. _oC
CURVE
25
---'/1 --/f
i
50
RG
Ie
IBI
lB.
1
tr
1.2
tf
n
mA
mA
rnA
p,S
/loS
p,S
/loS
TYPICAL BASE CHARACTERISTICS
III
i
Vee
RI
-65
-
2
IS2
VSS
200
-
/,'j,
0.5
~
RZ
+
92CS-10427R2
I
1.5
2
BASE-TO-EMITTER VOLTS
92C$-I0451T3
POWER TRANSISTOR
VBn
Vee
RI
R.
R.
=
=
=
=
=
8.5 volts
12 volts
50 ohms, 1 watt
30 ohms, 1 watt
7.8 ohms, 2 watts
2N1488
Si n-p-n diffused-junction type used in dc-to-dc converters, inverters,
choppers, voltage and current regulators, dc and servo amplifiers, relay-
RCA Transistor Manual
178
and solenoid-actuating circuits. Similar to JEDEC TO-3, Outline No.2
(Variant 1). Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case. This type is identical with type 2N1487 except for the
following items:
MAXIMUM RATINGS
CoUector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage:
VBE == -1.5 V........................................................................
Base open (sustaining voltage) ........................................
VCBO
100
V
VCEV
VCEO(SUS)
100
V
CHARACTERISTICS (At mounting-flange temperature
Collector-to-Emitter Sustaining Voltage (Ic == 100 mAo
lB == 0) ........................................................................................
Collector-to-Emitter Voltage (VBE == -1.5 V.
Ic = 0.5 mAl ..........................................................................
2N1489
55
V
= 25°C)
VCEO(SUS)
VCEV
55 min
V
100 min
V
POWER TRANSISTOR
Si n-p-n diffused-junction type used in dc-to-dc converters, inverters,
choppers, voltage and current regulators, de and servo amplifiers, relayand solenoid-actuating circuits. Similar to JEDEC TO-3, Outline No.2
(Variant 1). Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case. This type is identical with type 2N1487 except for the
following items:
CHARACTERISTICS (At mounting-flange temperature
Base-to-Emitter Voltage (VCE == 4 V. Ic == 1.5 A) ........
static Forward-Current Transfer Ratio (VCE == 4 V.
c;l~ec'to;~~o~tte~"'saiu~ati;;n"'R~~i~t;;n;;~'"''''''''''''''''''''
(Ic
= 1.5 A. IB == 100 mAl
................................................
2N1490
= 25°C)
VBE
hFE
rCE(sat)
2.5 max
V
25 to 75
0.67 max
n
POWER TRANSISTOR
Si n-p-n diffused-junction type used in dc-to-dc converters, inverters,
choppers, voltage and current regulators, de and servo amplifiers, relayand solenoid-actuating circuits. Similar to JEDEC TO-3. Outline No.2
(Variant 1). Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case. This type is identical with type 2N1487 except for the
following items:
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................
Collector-to-Emitter Voltage:
VBE == -1.5 V..........................................................................
Base open (sustaining voltage) ........................................
VCBO
100
V
VCEV
VCEO(SUS)
100
55
V
V
55 min
V
100 min
2.5 max
V
V
CHARACTERISTICS (At mounting-flange temperature
Collector-to-Emitter Sustaining Voltage
(Vc == 100 mAo IB
0) ......................................................
Collector-to-Emitter Voltage
(VBE = -1.5 V. Ic == 0.5 mAl ..........................................
Base-to-Emitter Voltage. (VCE
4 V. Ic == 1.5 A)....
Static Forward-Current Transfer Ratio (VCE
4 V.
Ic == 1.5 A) ..............................................................................
Collector-to-Emitter Saturation Resistance
(Ic == 1.5 A. IB
100 mAl ................................................
=
=
=
2N1491
=
= 25°C)
VCEO(SUS)
VCEV
VBE
hFE
rCE(sat)
25 to 75
0.67 max
n
TRANSISTOR
Si n-p-n triple-diffused type used in vhf applications for rf-amplifier, videoamplifier, oscillator, and mixer circuits in industrial and military equipment.
179
Technical Data for RCA Transistors
JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector
and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage (VBE = -0.5 V) ................
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Emitter Current ..........................................................................
Transistor Dissipation:
Tc up to 25 c C ........................................................................
Tc above 25 C C ....................................................................... .
Temperature Range:
Operating (Tc) and Storage (TsTG) ........................... .
Lead-Soldering Temperature (10 s max) ....................... .
VeBo
VCEV
VEBO
Ie
lE
V
V
V
A
A
30
30
1
0.25
-0.25
3
W
See curve page 112
PT
PT
-65 to 175
255
'C
'C
30 min
V
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ic = 0.1 rnA.
lE
0) ........................................................................................
Emitter-to-Base Floating Potential (VCB
30 V.
lE = 0) ........................................................................................
Collector-Cutoff Current (VCB = 12 V. lE = 0) ............
Emitter-Cutoff Current (VEB = 1. V. Ic = 0) ............... .
Small-Signal Forward-Current Transfer Ratio
(VCE
20 V. Ie
15 rnA. f
1 kc/s) ....................... .
Gain-Bandwidth Product (VCB
30 V. Ie = 15 rnA) ... .
Output Capacitance (VCB
30 V. IE
O.
f
0.15 Mc/s) ........................................................................
Small-Signal Power Gain (Vcc = 15 V. lE = -15 rnA.
Po.
10 mW. f
70 Mc/s) ............................................
Thermal Resistance. Junction-to-Case ..............................
=
=
=
=
=
= =
=
=
=
V(BR)CBO
V
0.5 max
VEB (ft)
ICBo
lEBO
lOmax
100 max
/LA
/LA
hr.
15 to 200
300
Mc/s
IT
Cobo
=
5 max
pF
13 min
50
dB
·C/W
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2NI491
COMMON-EMITTER CIRCUIT. BASE INPUT.
AMBIENT TEMPERATURE-25'C
I I I EIIE~-\.2
..!~~~-
r
V"
".....
-
~ "-"-
-
1.0
I--
2:!.
0.6
O.
O.
o
10
~
20
40
60
50
COLLECTOII-TO-EMITTER VOLTS
TYPICAL TRANSFER CHARACTERISTIC
60 TYPICAL TRANSFER CHARACTERISTIC
TYPE2NI491
COMMON-EMITTER CIRCUIT.
BASE INPUT.
COLLECTOR-TO- EMITTER/
VOLTS-30
AMBIENT TEMPERATUR
·2~·C
~60
/
S
0.2
J
3
II
~ 20
~
0.4
r-
i
/
/
TYPE 2N1491
COMMON-EMITTER CIRCUIT, BASE INPUT.
COLLECTOR-TO-EMITTER IIOLTS
("cE)-30
AM&IENT TEMPERATURE (TA)C2!5"il J--
~40
/
/
o
12CM-J0507TI
0.6
0.&
1.0
BASE MILLIAMPERES
1.2
HCS-_'
o
/
/
0.2
0.4
0.6
0.&
BASE-'TO-EMITTER VOLTS (VSE)
,zcs-,0508n
180
RCA Transistor Manual
2N1492
TRANSISTOR
Si n-p-n triple-diffused type used in vhf applications for rf-amplifier, videoamplifier, oscillator, and mixer circuits in industrial and military equipment.
JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector
and case. This type is identical with type 2N1491 except for the following
items:
MAXIMUM RATINGS
CoUector-to-Bas~
Voltage ..................:::................................... .
Colleetor-to-Emltter Voltage (VBE _ -0.5 V) ................
Emitter-to-Base Voltage ..........................................................
VeBO
VeEv
VEBO
60
60
2
V
V
V
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie == 0.1 rnA.
lE == 0) ....................................................................................... .
Emitter-to-Base Floating Potential (VeB == 60 V.
lE == 0) ........................................................................................
Emitter-Cutoff Current (VEB
2 V. Ie
0) .......•......•.
Small-Signal Power Gain (Vee
30 V. lE == -15 rnA.
P •• == 100 mW. f == 70 Me/s) ........................................... .
==
=
2N1493
V(BR)CBO
VEB(II)
lEBO
Gpo
60 min
V
0.5 max
100 max
/LA
13 min
dB
V
TRANSISTOR
Si n-p-n triple-diffused type used in vhf applications for rf-amplifier, videoamplifier, oscillator, and mixer circuits in industrial and military equipment.
JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector
and case. This type is identical with type 2N1491 except for the following
items:
MAXIMUM RATINGS
Collector-to-Bas~
Voltage ....................................................... .
Colleetor-to-Emltter Voltage (VBE == -0.5 V) ................
Emitter-to-Base Voltage ......................................................... .
VeBO
VeEv
VEBO
100
100
4.5
V
V
V
100 min
V
0.5 max
100 max
/LA
10 min
dB
CHARACTERISTICS
=
Collector-to-Base Breakdown Voltage (Ie
0.1 rnA.
,IE == 0) ........................................................................................
Emitter-to-Base Floating Potential (VeB
100 V.
IE == 0) .........•..•.•.....•...••.•..•.•....•...•..•••.•.••..••......••.•.•........••..••••..••
Emitter-Cutoff Current (VEE == 4.5 V. Ie
0) •...........
Small-Signal Power Gain (Vee
50 V. lE
-25 mA.
P •• == 500 mW. f == 70 Me/s) ........................................... .
=
2N1524
=
==
V(BR)CBO
VEB (II)
lEBO
Gpo
V
TRANSISTOR
Ge p-n-p drift-field type used in 455-kilocycle if-amplifier service in batteryoperated portable radio receivers and automobile radio receivers operating
from either a 6-volt or a 12-volt supply. JEDEC TO-l, Outline No.1.
Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Colleetor-to-Base Voltage ....................................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ....................................................................... .
Emitter Current ..........................................................................
Transistor Dissipation:
TA
25·C ............................................................................... .
TA == 55·C ................................................................................
TA
71·C ........................................................................•.......
=
=
T(fle~~'tl~e (~{W~nt)
........................................................... .
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
VeBO
VEBO
Ie
IE
PT
PT
PT
TA(opr)
TSTG
TL
-24
-0.5
-10
10
V
V
mA
rnA
80
50
35
mW
roW
mW
71
-65 to 85
255
·C
·C
·C
Technical Data for RCA Transistors
CHARACTERISTICS
181
=
Collector-to-Base Breakdown Voltage (VBE
0.5 V.
Ie
-50 /LA) ........................................................................
Collector-Cutoff Current (VeB
-12 V. IE
0) ........
Emitter-Cutoff Current (VEB
-0.5 V. 10
0) ........
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB
-12 V. Ie
-1 mAl ....................
Small-Signal Forward-Current Transfer Ratio
(VeE = -6 V. 1m
-1 mAo f = 1 kc/s) ....................
Output Capacitance (VeB
-12 V. 1m
O.
f
455 kc/s) ..........................................................................
Thennal Resistance. Junction-to-Ambient ........................
=
=
=
=
==
=
=
V(BB)eBV
=
=
lOBO
lEBO
-24 min
-16 max
-16 max
~
33 max
Mc/s
fUb
27 to 100
ht.
=
V
3.6 max
0.4
Cobo
el-A
°Clrl':
TYPICAL TRANSFER CHARACTERISTIC
6
TYP~ 2NI524 I
COLLECTOR-TO-EMITTER
VOLTS'-6
AMBIENT TEMPERATlfIE'25"C
I
I
_V
o
II
50
100 150 200 250
BASE-To-EMITTER MILUVOLTS
92CS-IO&19T
TYPICAL OPERATION IN SINGLE-STAGE 455-kc/s AMPLIFIER CIRCUIT
DC Collector Supplr. Voltage ................................
DC Collector-to-Emitter Voltage ........................ ..
Collector Current ..........................................................
~9t~~tR~~=ce ..·::::::::;:::::::::::::::::::::::::::::::::::::::::::::::
Collector-to-Base Capacltance ..................................
Maximum Power Gain ................................................
Useful Power Gain (Single-tuned unilateralized
circuit) :
In neutralized circuit ........................................
In unneutralized circuit ......................................
Vee
VeE
Ie
RI.
R ••
-12
-11
-1
1550
0.525
2
54.4
V
mA
0
MO
MAG
--6
-5.7
-1
1300
0.31
2.2
51
MUG
MUG
29.7
33
33
30.2
dB
dB
Cobo
V
g
2N1525
TRANSISTOR
Ge p-n-p drift-field type used in 455-kilocycle if-amplifier service in batteryoperated portable radio receivers and automobile radio receivers operating
from either a 6-volt or a 12-volt supply. JEDEC TO-40, Outline No.la.
Terminals: I - emitter, 2 - base, a - collector. This type is electrically identical with type 2N1524.
2N1526
TRANSISTOR
Ge p-n-p drift-field type used in mixer and oscillator applications in batteryoperated portable radio receivers and automobile radio receivers operating
from either a 6-volt or a 12-volt supply. JEDEC TO-I, Outline No.1.
Terminals: I - emitter, 2 - base, a - collector. This type is identical with
type 2Nl524 except for the following items:
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio
(VeE
--6 V. Is = 1 mA, f
1 kc/s) ............................
=
=
hto
27 to 170
182
RCA Transistor Manual
TYPICAL OPE~ATION IN SELF-EXCITED 1.5 Mels CONVERTER CIRCUIT
DC Collector Supplr, Voltage ................................
DC Collector-to-Elmtter Voltage ..........................
DC Collector Current ..................................................
Input Resistance ............................................................
~Mu~a~:~~~~~tt;i···o~cii.iaiOr·~iii"jection···········
Voltage ..........................................................................
Conversion Power Gain:
Maximum Available ................................................
Useful ........................................................................... .
2N1S27
-6
-12
-11
-5
-0.65 --0.65
1850 2150
0.19
0.48
VCC
VCE
Ic
Rio
Roe
100
MAGc
MUGc
44.2
34.2
V
V
mA
!l
M!l
100
mV
48.9
dB
dB
35.8
TRANSISTOR
Ge p-n-p drift-field type used in mixer and oscillator applications in batteryoperated portable radio receivers and automobile radio receivers operating
from either a 6-volt or a l2-volt supply. JEDEC TO-40, Outline No.l3.
Terminals: 1 - emitter, 2 - base, 3 - collector. This type is electrically identical with type 2Nl526.
2N160S
2N160SA
COMPUTER TRANSISTORS
Ge n-p-n alloy-junction types used in medium-speed switching applications
in data-processing equipment. The n-p-n construction permits complementary operation with a matching p-n-p type such as the 2N404. JEDEC
TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base and case, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................
Collector-to-Emitter Voltage (VBE = -1 V) ... .
Emitter-to-Base Voltage ............................................
Collector Current ..........................................................
Emitter Current ............................................................
T~~~o~D~w.~a~~~: ...................................................
T .. above 25·C ............................................................
Temperature Range:
operating (Junction) ............................................
Storage ..........................................................................
Lead-Soldering Temperature (10 s max)
VeBo
VCEV
VEBO
Ie
IE
PT
PT
TJ(opr)
TSTG
TL
2N1605 ZN1605A
40
V
25
40
V
24
12
V
12
100 rnA
100
-100 rnA
-100
150
200
See curve page 112
100
100
-65 to 100
235
235
mW
·C
·C
·C
CHARACTER ISTICS
Collector-to-Base Breakdown Voltage:
Ie = 0.02 mAo IE
0 ........................................... .
Ie = 0.01 mAo IE
0........................................... .
Emitter-to-Base Breakdown Voltage
(IE = 0.02 mAo Ie = 0) ........................................
Collector-to-Emitter Saturation Voltage:
Ie = 12 rnA. Is == 0.4 mA ....................................
Ie =: 24 rnA. Is = 1 mA ..................................... :..
Base-to-Emitter Voltage:
le=12mA.Is =0.4mA ....................................
le=24rnA.Is=1mA ........................................
Emitter Floating Potential (l1-M!l voltmeter
between emitter and base):
VCB
24 V ......................................................•.....
VeB = 40 V ........................................................... .
Collector-Cutoff Current:
Ves = 12 V. IE
O. T .. = 25·C ........................
VeB = 12 V. IE = O. T .. = 80·C ........................
VeB = 40 Y, IE = O. T .. = 25·C ........................
Emitter-Cuton: Current (VEB = 2.5 V. Ie = 0)
Static Forward-Current Transfer Ratio:
VeE = 0.15 V. Ie = 12 mA ....................................
VeE = 0.2 V. Ic
24 rnA ......................................
VeE = 0.25 V. Ie = 20 rnA ....................................
Small-Signal Forward-Current Transfer-Ratio
Cutoff Frequency (VCB
6 V. IE
1 mAl
==
=
=
=
=
=
V(BB)CBO
V(BB)CBO
25
-min
40 min
V
V
V(BR)EBO·
12
12 min
V
VCE(sat)
VCE(sat)
0.15
0.2
0.15 max
0.2 max
V
V
VBE
VBE
0.35
0.4
0.35 max
0.4 max
V
V
1
-max
1 max
V
V
VEB(tll
VEB(tl
-max
leBO
leBO
leBO
lEBO
5
125
2.5
125 max
lOmax
2.5 max
hFE
hFE
hFE
30
24
40
30 min
24 min
40 min
nfb
4
p,A
~
/I.A
4min Mc/s
183
Technical Data for RCA Transistors
CHARACTERISTICS (cant'd)
Total Stored Charge (Vee:::; 5.25 V,
Ie :::; 10 rnA, IB :::; 1 rnA) ....................................
Output Capacitance (VeB :::; 6 V, 1m :::; 1 rnA,
f:::; 2 Mc/s) ................................................................
2N1605 2N1605A
1400 1400 max
Qs
20
Cobo
pC
pF
20 max
2N1613
TRANSISTOR
Si n-p-n planar type used in small-signal and medium-power applications
in industrial and military equipment. JEDEC TO-5, Outline No.3. Terminals:
1 - emitter, 2 - base, 3 - collector and case. This type is identical with type
2N2l02 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector-to-Emitter Voltage (Rllm ~ 10 0) ....................
Transistor Dissipation:
TA up to 25-C ........................................................................
Te up to 25·C ........................................................................
Lead-Soldering Temperature (10 5 max) ........................
VeBo
VemR
PT
PT
TL
75
50
V
V
0.8
3
265
W
W
·C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (10 :::; 0.1 rnA,
1m :::; 0) ........................................................................................
Collector-to-Emitter Sustaining Voltage (Ie:::; 100 rnA,
RBm :::; 10 0, t p :::; 300 ,,5, df = 1.8%) ............................
Collector-to-Emitter Saturation Voltage (10:::; 150 rnA,
Is :::; 15 rnA, t p :::; 300 p,S, df
1.8%) ............................
Base-to-Emit!EJr Saturation Voltage (Ie:::; 150 rnA,
Is :::; 15 rnA, t p :::; 300 ,,5, df = 1.8%) ............................
Collector-Cutoff Current:
VCB :::; 60 V, 1m :::; 0, TA :::; 25·C ....................................
VeB :::; 60 V, 1m :::; 0, TA :::; 150·C ..................................
Emitter-Cutoff Current (VmB :::; 5 V, Ie
0) ................
Static Forward-Current 'rransfer Ratio:
Vem :::; 10 V, Ie = 0.1 rnA, TA :::; 25·C .......................... ..
Pulsed Static Forward-Current Transfer Ratio:
Vem :::; 10 V, Ie = 150 rnA, TA :::; 25·C, t p
300 p.s,
df :::; 1.8% ............................................................................
Vem :::; 10 V, Ie
10 rnA, 'rA :::; -55·C, t p :::; 300 p.s,
df
1.8% .......................................................................... ..
Small-Signal Forward-Current Transfer Ratio:
Vem = 5 V, Ie
1 rnA, f
1 kc/s ............................... .
Vem :::; 10 V, Ie = 50 rnA, f
20 Mc/s ........................
Output Capacitance (VeB:::; 10 V, !m :::; 0) ........................
Noise Figure (Vem :::; 10 V, Ie
0.3 rnA, f :::; 1 kc/s,
RG
510 n, circuit bandwidth :::; 1 cis) ................... .
Thermal Resistance, Junction-to-Case ............................
Thermal Resistance, Junction-to-Ambient ......................
=
=
=
=
=
=
=
==
=
V(BR)eBO
75 min
V
VemR(sus)
50 min
V
Vem(sat)
1.5 max
V
VBm(sat)
1.3 max
V
0.01 max
lOmax
0.01 max
p.A
"A
p.A
leBO
leBa
!mBO
hFm
20 min
hFm
40 to 120
hFm
20 min
h ..
hr.
30 to 100
3 min
25 max
pF
12 max
58.3 max
219 max
dB
·C/W
·C/W
Cobo
NF
9J-c
9J-A
2N1631
TRANSISTOR
Ge p-n-p drift-field type used in rf-amplifier applications in battery-operated
AM radio receivers. JEDEC TO-40, Outline No.l3. Terminals: 1 - emitter,
2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Emitter Current ..........................................................................
Transistor Dissipation:
.
TA :::; 25·C ................................................................................
TA
55·C ................................................................................
TA :::; 71·C ................................................................................
Temperature Range:
Operating (Ambient) ........................................................ ..
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ........................
=
VeBO
VmBo
Ie
1m
PT
PT
PT
TA(opr)
TSTG
TL
-34
-0.5
-10
10
V
V
rnA
rnA
80
50
35
mW
mW
mW
71
-65 to 85
255
·C
·C
·C
184
RCA Transistor Manual
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ic = -50 p,A,
lE
0) ..................................................................................... .
Collector-Cutoff Current (VCB
-12 V, lE= 0) ....... .
Emitter-Cutoff Current (VEB = -0.5 V, Ie = 0) ....... .
Small-Signal Forward-Current Transfer Ratio
(VCE
-6 V, Ic
-1 rnA, f = 1 kc/s) ................... .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCB = -12 V, lE
1 rnA) •.......................
Thermal Resistance, Junction-to-Ambient ..................... .
=
=
=
=
=
V(BB)CBO
ICBO
lEBO
-34 min
-16 max
-16 max
hr.
40 to 170
V
p,A
p,A
Mc/s
·C/W
45
f'hfb
8J-A
0.4 max
TYPICAL OPERATION IN RF-AMPLIFIER CIRCUIT
DC Collector Supply Voltage ................................
DC Collector-to-Emitter Voltage ......................... .
Emitter Current ........................................................... .
Signal-Frequency ......................................................... .
Input Resistance ........................................................... .
Output Resistance ....................................................... .
Output Capacitance .................................................. ..
Extrinsic Transconductance ................................... .
Maximum Power Gain .............................................. ..
Useful Power Gain (Unneutralized circuit)
6
V
V
rnA
Mc/s
n
Mn
pF
p,mhos
dB
dB
-12
--6
-5.7
-11
1
1
1.5
1.5
520 1000
0.18
0.065
2.2
2
36000 36000
40.4
47.7
25.3
25.6
f
R,.
Roe
Cobo
gm
MAG
MUG
TYPICAL INPUT AND OUTPUT CHARACTERISTICS
TYPICAL TRANSFER CHARACTERISTIC
I
TYP~ 2N 1631 I
COLLECTOR-TO-EMITTER
VOLTS=-9
AMBIENT TEMPERATUlE=25"C
Vce
VCE
lE
TYPE 2NI631
COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE (TA). ZS'C _
EMITTER MILLIAMPERES =1
FREQUENCY (Mell) °I.S
eAC OUTPUT CIRCUIT SHORTED. - .AC INPUT CIRCUIT SHORTED.
til
2
%
o
I
'21000
!
I
Z
./
:, 7S0
~
1/
I
o
g
Ii;
500
!:;
2S0
~
o
~
./
SO
100 ISO ZOO 250
BASE-TO-EMITTER MILLIVOLTS
92CS-I0678T
-Z
~~
O.
V::I
V
~V
-4
-6
O.
-8
-10
-12
-14
0
-16
COLLECTOR-TO-EMITTER VOLTS
92.CS-1056ITI
2N1632
TRANSISTOR
Ge p-n-p drift-field type used in rf-amplifier applications in battery-operated
AM radio receivers. JEDEC TO-I, Outline No.1. Terminals: 1 - emitter,
2 - base, 3 - collector. This type is electrically identical with type 2N1631.
2N1637
TRANSISTOR
Ge p-n-p drift-field type used in rf-amplifier applications in AM automobile
radio receivers. JEDEC TO-I, Outline No.1. Terminals: I - emitter, 2 - base,
3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ...................................................................... ..
. Emitter Current ........................................................................ ..
Transistor Dissipation:
TA
25·C .............................................................................. ..
=
T .. = 55·C .............................................................................. ..
TA = 71·C ................................................................................
Temperature Range:
Operating (Ambient) .......................................................... ..
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
VCBO
VEBO
Ic
IE
PT
PT
PT
TA(opr)
TSTG
TL
-34
-1.5
-10
10
V
V
rnA
rnA
80
50
35
mW
mW
mW
71
-65 to 85
255
·C
·C
·C
Technical Data for RCA Transistors
185
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = -50 /LA,
IE = 0) ....................................................................................... .
Collector-Cutoff Current (VeB = -12 V, IE = 0) ....... .
Emitter-Cutoff Current (VEB = -1.5 V, Ie = 0) ........
Small-Signal Forward-Current Transfer Ratio
(VeE = -6 V, Ie = -1 rnA, f
1 kc/s) ................... .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB
-12 V, IE
1 rnA) ....................... .
Output Capacitance (VeE
-12 V, Ie
-1 rnA,
f = 1 kc/s) ............................................................................. .
Thermal Resistance, Junction-to-Ambient ....................... .
=
=
=
=
-34 min
-12 max
-15 max
V(BR)CBO
leBo
lEBO
V
itA
/LA
40 to 170
=
CObO
8J-A
45
Mc/s
2
0.4 max
pF
'C/W
-11.2
1
1.5
1000
0.18
47.7
25.6
V
rnA
Mc/s
TYPICAL TRANSFER CHARACTERISTIC
6
TYPt 2NI637
COLLECTOR-TO-EMITTER
VOLTS'-12
AMBIENT TEMPERATlRE'25"C
/
1/
I
o
50
100
l/
150
200 250
BASE-TO-EMITTER MILLIVOLTS
92CS-IO~~6TI
TYPICAL OPERATION IN RF-AMPLIFIER CIRCUIT
DC Collector-to-Emitter Voltage ....................... .
Emitter Current ........................................................... .
Signal Frequency ......................................................... .
Input Resistance ........................................................... .
Output Resistance ....................................................... .
Maximum Power Gain ............................................... .
Useful Power Gain (Unneutralized circuit)
-5.5
1
1.5
520
0.065
40.4
25.3
VeE
IE
f
R'e
Roe
MAG
MUG
a
Ma
dB
dB
2N1638
TRANSISTOR
Ge p-n-p drift-field type used in if-amplifier applications in AM automobile
radio receivers. JEDEC TO-l, Outline No.1. Terminals: 1 - emitter, 2 - base,
3 - collector. This type is identical with type 2Nl637 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage
VEBO
-0.5
V
leBo
lEBO
-12 max
-12 max
/LA
/LA
h,.
70 to 275
CHARACTERISTICS
Collector-Cutoff Current (Ven = -12 V, Ie = 0) ..........
Emitter-Cutoff Current (VEB = -0.5 V, Ie = 0) ............
Small-Signal Forward-Current Transfer Ratio
(VeE
-6 V, Ie
-1 rnA, f
1 kc/s) ....................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCB
-12 V, IE
1 rnA) ........................
=
=
=
=
=
flo'b
40
Mc/s
TYPICAL OPERATION IN SINGLE·STAGE IF·AMPLIFIER CIRCUIT
DC Collector-to-Emitter Voltage ........................... .
Emitter Current ............................................................
~;ru~ll:.~~~~~~y . ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Output Resistance ....................................................... .
Maximum Power Gain ................................................
Useful Power Gain (Unneutralized circuit) ........
VeE
-5
-11
R,.
262.6
1800
0.47
58.6
35
262.5
1400
0.72
61.5
36.6
IE
f
Ro.
MAG
MUG
1.6
2
rnA
kc/s
a
Mn
dB
dB
186
RCA Transistor Manual
2N163P
TRANSISTOR
Ge p-n-p drift-field type used in converter, mixer, and oscillator applications
in AM automobile radio receivers. JEDEC TO-l, Outline No.!. Terminals:
1 - emitter, 2 - base, 3 - collector. This type is identical with type 2N1637
except for the following items:
TYPICAL OPERATION IN SELF-EXCITED 1.5-Mc/s CONVERTER CIRCUIT
DC Collector-to-Emitter Voltage ............................
DC Collector Current ..................................................
Input Resistance ............................................................
Output Resistance ........................................................
RMS Base-to-Emitier Oscillator-Injection
Voltage ......................................................................... .
Conversion Power Gain (useful) ............................
2N1683
VCE
Ie
R Ie
Roe
-5
0.65
1850
0.1
-11
0.65
2200
0.2
mA
MUGu
100
35.4
100
37
mV
dB
V
n
Mn
COMPUTER TRANSISTOR
Ge p-n-p diffused-junction type used in computer applications in dataprocessing equipment. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base, 3 - collector. This type is identical with type 2N1300 except for
the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage
-4
V
VnE
-4 min
-0.6 max
V
V
hFE
hFE
iT
50 min
50 min
50 min
75typ
85typ
160 max
410 max
pC
pC
VEBO·
CHARACTERISTICS
Emitter-to-Base Breakdown Voltage (IE = -0.1 mA,
Ie = 0) ......................................................................................
Base-to-Emitter Voltage (Ie = -40 mA, In = -1 rnA)
Static Forward-Current Transfer Ratio:
VeE = -0.3 V, Ic = -10 rnA ........................................... .
VCE = -0.5 V, Ic = -40 mA .......................................... ..
Gain-Bandwidth Product (VCE = -3 V, Ie
-10 mA)
Total Stored Charge:
Ie = -10 mA, In
-0.4 mA ........................................... .
Ie = -40 mA, In = -1.6 rnA ........................................... .
=
=
V(BR)EBO
Qs
Qs
Mcls
• This rating may be exceeded and the emitter-to-base junction operated in the
breakdown condition provided the emitter dissipation is limited to 30 milliwatts
at 25"C. For ambient temperatures above 25·C, reduce the dissipation by 0.5
milliwatts per ·C.
2N1700
POWER TRANSISTOR
Si n-p-n diffused-junction type used in power-switching circuits such as
dc-to-dc converters, inverters, choppers, solenoid and relay controls; in
oscillators, regulators, and pulse-amplifier circuits; and as class A and
class B push-pull audio and servo amplifiers in industrial and military
equipment. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base,
3 - collector and case. For typical operation in a power-switching circuit,
refer to type 2N1479.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE
-1.5 V ....................................................................... .
Base open (sustaining voltage) ....................................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Base Current ............................................................................... .
=
VeRO
60
V
VCEV
VCEO(SUS)
VERO
Ie
In
60
40
6
V
V
V
1
0.75
A
A
187
Technical Data for RCA Transistors
MAXIMUM RATINGS (cont'd)
Transistor Dissipation:
Te up to 25·C ..........................................................................
Te above 25'C ........................................................................
Temperature Range:
~fo~i~~in~....~~~~.~~~.~!....::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
=
=
=
I
-65 to 200
-65 to 200
255
·C
·C
·C
VeEo(sus)
40 min
V
VeE v
VBE
60 min
2 max
V
V
leBO
leBO
lEBO
75 max
1000 max
25 max
p.A
p.A
p.A
reE(sat)
lOmax
0
hFE
20 to 80
hf.
40
= 25°C)
=
=
==
TJ(opr)
TL
Collector-to-Emitter Sustaining Voltage (Ie == 50 rnA.
Is == 0) ......................................................................................
Collector-to-Emitter Voltage (VBE == -1.5 V,
Ie == 0.5 rnA) ........................................................................... .
Base-to-Emitter Voltage (VeE
4 V. Ie == 100 mAl ....
Collector-Cutoff Current:
VeB == 30 V, IE
0, Te
25'C ....................................... .
VeB == 30 V, IE
0, Te
150·C ..................................... .
Emitter-Cutoff Current (VEB
6 V, Ie
0) ................
Collector-to-Emitter Saturation Resistance
(Ie
100 rnA, IB == 10 mAl ............................................
Static Forward-Current Transfer Ratio
(VeE == 4 V, Ie == 100 rnA) ............................................
Small-Signal Forward-Current Transfer Ratio
(VeE == 4 V. Ie
5 rnA, f == 1 kc/s) ........................... .
=
=
W
5
See curve page 112
TSTO
Lead-Soldering Temperature (10 s max) ....................... .
CHARACTERISTICS (At case temperature
PT
PT
TYPICAL COLLECTOR CHARACTERISTICS
,- _70
10- 1--60
TYPE 2NI700
COMMON-EMITTER CIRCUIT. BASE INPUT
CASE TEMPERATURE' 25'C
501
40
1
0.8
30
...~
~0.6
0
e
I
~0.4
f...- BASE MILLIAMkRES'1O
8
5
-
0.2
[7
2
17
I
o
10
10
30
40
50
60
COLLECTOR-TO-EMITTER VOLTS
20
TYPICAL OC FORWARD -CURRENT
TRANSFER -RATIO CHARACTERISTICS
TYPE 2NI7OO
ggtt'gtR~~~:"f~i':~: :=!:4
CURVE
-----
ITEMPERA~O=~
---
(\.
O~
~
~ 10...
....:::::
o
CTcI-"C
25
-65
175
~
0.2 0.4 0.6 o.e
I
COLLECTOR AMPERES IICI
92C&-IIS'7IT
70
eo
92C.... II!!IOTI
RCA Transistor Manual
188
CHARACTERISTICS (cont'd)
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB = 28 V. Ie = 5 rnA) ............................
Output Capacitance (VeB = 40 V. Ie := O. f
1 kc/s)
Thermal 'l'ime Constant ....................................................... .
Thermal Resistance. Junction-to-Case ................................
Thermal Resistance, Junction-to-Ambient ........................
=
2N1701
1.2
150
10
35 max
200 max
fbfb
Cobo
T(thermal)
9J-e
9J-A
Mc/s
pF
IDS
'C/W
'C/W
POWER TRANSISTOR
Si n-p-n dillused-junction type used in power-switching applications such as
dc-to-dc converter, inverter, chopper, solenoid and relay control circuits; in
oscillator, regulator, and pulse-amplifier circuits; and as class A and class B
push-pull audio and servo amplifiers in industrial and military equipment.
JEDEC TO-S, Outline No.5. Terminals: 1 - emitter, 2 - base, 3 - collector
and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage:
VBE
-1.5 V ........................................................................
Base open (sustaining voltage) ....................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Base Current .............................................................................. ..
=
Trres~~ortoD~s!~a~~~.: ...........................................•.....................
Te above 25'C ....................................................................... .
Temperature Range:
Operating (Junction) ............................................................
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ............................
VCBO
60
V
VeEv
VeEo(sus)
VEBO
10
60
40
6
2.5
1
V
V
V
Is
A
A
PT
PT
25
W
See curve page 112
TJ(opr)
TSTO
-65 to 200
-65 to 200
235
Tp
'c
'c
'c
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage (Ie := 100 rnA.
IB
0) ......................................................................................
Collector-to-Emitter Voltage (VBE := -1.5.
Ie := 0.75 rnA) ........................................................................
Collector-to-Emitter Saturation Voltage:
(Ie = 2.5 A. IB := 1 A) ........................................................
Base-to-Emitter Voltage (VeE
4 V. Ie = 300 rnA) ....
Collector-Cutoff Current:
VeB := 30 V. lE = O. Te := 25'C ........................................
VeB = 30 V. lE = O. Te := 150'C ......................................
Emitter-Cutoff Current (VEB
-6 V. Ie := 0) ............
Collector-to-Emitter Saturation Resistance
(Ie = 300 rnA. Is
30 mAl ............................................
=
=
VCEO(SUS)
40 min
V
VeEv
60 min
V
=
VeE (sat)
VBE
12.5 max
3 max
V
V
=
leBO
leBO
lEBO
100 max
1500 max
50 max
p.A
p.A
p.A
5 max
n
rCE (sat)
TYPiCAL COLLECTOR CHARACTERISTICS
2.5
220
0
180
160
140
120
100
2
II)
'"a:
'"21.5
..
TYPE 2NI701
COMMON-EMITTER CIRCUIT. BASE INPUT.CASE TEMPERATURE- 2S'C
Q.
80
§
'"-'
5c.>
60
50
0
30
I
r-
BASE MIl.l.IAMPERES -20
15
10
0.5
~
5
o
--==1
10
20
0
30
40
50
60
COl.l.ECTOR-TO- EMITTER VOl.TS
70
80
92CM-I1562Tl
189
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB = 28 V. Ie
5 mAl ........................
Static Forward-Current Transfer Ratio:
Vel' = 4 V. Ie = 300 mA ....................................................
Vel' = 20 V. Ie = 2.5 A....................................................
Output Capacitance (VeB
40 V. IE
O. f
1 kc/s)
Thermal Resistance. Junction-to-Case ..............................
Thermal Resistance. Junction-to-Ambient ........................
=
=
=
=
fUb
hFE
hFE
Cobo
9J-e
9J-A
1 max
Mc/s
20 to 80
5 min
175 max
7 max
100 max
pF
·C/W
·C/W
TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT
DC Supply Voltage ....................................................................
DC Base-Bias Voltage ............................................................
Generator Resistance ................................................................
"On" DC Collector Current ....................................................
"Turn-On" Base Current ........................................................
"Turn-Off" Base Current ........................................................
Delay Time ....................................................................................
Rise Time ......................................................................................
Storage Time ................................................................................
Fall Time ......................................................................................
12
-8.5
50
750
65
-35
0.2
1
0.8
1.1
Vee
RG
Ie
Inl
In.
t.
t,
t,
tf
V
V
n
mA
mA
mA
p.s
p.s
p.s
p.s
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
TYPE 2NI701
COMMON - EMITTER CIRCUIT. BASE INPUT.
COLLECTOR-TO-EMITTER VOLTS (VCEl-4
r\
~
I--
CURVE
25
-65
175
I-- ___
~ -...;;:::: ---~~
o
0.5
I
~
CASE
TEMPERATURE (Tcl-OC
1.5
R2
-
IB2
RI
VBB
-
+
92CS-10427R2
r--2
2
2.5
VBB = 8.5 volts
Vee
12 volts
Rl
50 ohms. 1 watt
Rz = 220 ohms. 1 watt
R3
15.9 ohms. 2 watts
:5
COLLECTOR AMPERES (Iel
92CS-1I574T
==
=
2N1702
TRANSISTOR
Si n-p-n diffused-junction type used in power-switching applications such
as dc-to-dc converter, inverter, chopper, and relay control circuits; in
voltage and current regulator circuits; and in dc and servo amplifier circuits. Similar to JEDEC TO-3, Outline No.2 (Variant 1). Terminals:
1 (B) - base, 2 (E) - emitter, Mounting Flange - case and collector.
MAXIMUM RATINGS
Collector-to-Base Voltage .................................................... ..
Collector-to-Ernitter Voltage:
VBI' = -1.5 V ...................................................................... ..
Base open (sustaining voltage) ........................................
Emitter-to-Base Voltage ........................................................ ..
Collector Current .................................................................... ..
Base Current ............................................................................... .
Transistor Dissip,ation:
Te up to 25 C ...................................................................... ..
Te above 25°C ....................................................................... .
Temperature Range:
Operating (Junction) .......................................................... ..
Storage ...................................................................................... ..
VeBO
60
V
VCEV
VCEO(SUS)
VEBO
Ic
In
60
40
6
5
2.5
V
V
V
A
PT
PT
TJ(opr)
TSTG
A
75
W
See curve page 112
-65 to 200
-65 to 200
·C
·C
CHARACTERISTICS
Collector-to-Ernitter Sustaining Voltage (Ie = 100 mAo
In = 0) .................................................................................... ..
Collector-to-Emitter Voltage (VBI'
-1.5 V.
Ie
1 mAl .......................................................................... ..
Base-to-Emitter Voltage (VCE- = 4 V. Ic
800 mAl .. ..
=
=
=
VCEO(SUS)
40 min
V
VCEV
VBI'
GO min
V
V
4 max
190
RCA Transistor Manual
TYPICAL COLLECTOR CHARACTERISTICS
5
~
TYPE 2NI702
COMMON-EMITTER CIRCUIT, BASE INPUT.
CASE TEMPERATURE = 25°C
60
4
500
400
300
250
BASE MILLIAMPERES - 200
160
120
80
60
40
I
1-.......
10
2
o
10
v/
./
70
30
40
50
60
COLLECTOR-TO-EMITTER VOLTS
20
80
92CM-mS64TI
CHARACTERISTICS (cont'd)
Collector-Cutoff Current:
VeB == 30 V. IE == O. Te == 25·C ...................................... ..
VeB == 30 V. IE == O. Te == 150·C ..................................... .
Emitter-Cutoff Current (VEB == 6 V. Ie == 0) ................
Collector-to-Emitter Saturation Resistance
(Ie == SOO mAo In == SO mA) ........................................... .
Static Forward-Current Transfer Ratio (VeE == 4 V.
Ie == SOO mA) ..........................................................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency {Vcn == 2S V. Ic == 5 mA) ........................... .
Output Capacitance (VCB == 40 V. IE == 0) ................... .
Thermal Resistance. Junction-to-Case ............................. .
ICBO
leBO
lEBO
rCE(sat)
200
2000
100
p,A
p,A
p,A
4 max
n
hFE
15 to 60
f.f.
1
200 max
2.33 max
Mc/s
pF
·C/W
12
-8.5
50
1.5
0.3
-0.15
0.2
1
1
1.2
V
V
Cobo
8J-C
TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT
~ne;:f!~iik~:i~t~ie·::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
"On" DC Collector Current ................................................... .
"Turn-On" Base Current ....................................................... .
"Turn-Off" Base Current ....................................................... .
Delay Time ................................................................................... .
Rise Time ......................................................................................
~~la~k~~~...::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Vce
RG
Ie
Inl
In2
td
tr
t.
tf
n
A
A
A
JLS
p,s
p,s
p,s
TYPICAL DC FORWARD-CURRENT
TRANSFER - RATIO CHARACTERISTICS
TYPE 2NI702
COMMON-EMITTER CIRCUIT. BASE INPUT.
COLLECTOR- TO-EMITTER VOLTS (VCEI- 4
CASE
TEMPERATURE 11: )_·C
25
-65
175
CURVE
-
IBI ..
R2
RI
Vee
--o
2
3
4
2
IB2
...
92CS-10427R2
VBB == S.5 volts
Vce = 12 volts
Rl == 50 ohms. 1 watt
fu == 30 ohms. 1 watt
R. == 7.S ohms. 2 watts
-II
COLLECTOR AMPERES (Ic)
92CS-1I575T
2N1708
COMPUTER TRANSISTOR
Si n-p-n double-diffused epitaxial planar type used in high-speed switching
191
Technical Data for RCA Transistors
applications in military and industrial equipment where high reliability and
high packaging densities are essential. JEDEC TO-46, Outline No.16.
Terminals: 1 - emitter, 2 - base, 3 - collector and case. This type is electrically identical with type 2N2205.
2N1711
TRANSISTOR
Si n-p-n triple-diffused planar type used in a wide variety of small-signal
and medium-power applications in military and industrial equipment. It
features exceptionally low noise characteristics. JEDEC TO-5, Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ..................................................... .
Collector-to-Emitter Voltage (RBE ;;;; 10 0) ....................
Emitter-to-Base Voltage ............................................................
Collector Current ....................................................................... .
Transistor Dissipation:
TA up to 25°C ........................................................................
Te up to 25°C ....................................................................... .
TA or Tc above 25°C ............................................................
Temperature Range:
Operating (Junction) ........................................................ ..
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
VeBo
VeER
VEBO
Ie
PT
PT
PT
TJ(opr)
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
==
=
=
==
=
=
=
=
=
==
=
=
-- ----
~'Y V I
I--¢ V I
)
~
o~
10
20
30
40
50
1
A
V
0.8
W
3
W
See eurve page 112
·C
·C
·C
75 min
v
7 min
V
VRT
75 min
V
VeER (sus)
50 min
V
VeE (sat)
1.5 max
V
VBE(sat)
1.3 max
V
0.01 max
lOmax
0.005 max
p,A
p,A
V(BR)EBO
ICBO
leBo
ImBO
hFE (pulsed)
hFE (pulsed)
75min
40 min
hFE
hFE
20 min
35 min
h,.
hr.
70 to 300
3.5 min
JLA
~
'"'"
II:
'"a.2
-
I
005
BASE MICROAMPERES-O
o
==
==
TYPE 2NI711
COMMON-EMITTER CIRCUIT. BASE INPUT.
AMBIENT TEMPERATURE·25·C
"..-
=
V
V
7
-65 to 200
-65 to 200
300
TSTG
TL
CHARACTERISTICS (At case temperature = 25°C)
Collector-to-Base Breakdown Voltage (Ie = 0.1 rnA.
Im = 0) ......................................................................................
V(BR)eBO
Emitter-to-Base Breakdown Voltage (IE = 0.1 rnA.
Ie
0) .................................................................................... ..
Collector-to-Emitter Reach-Through Voltage
coh~to;~~-~tt:rV S~t~n~~gm¢Jua:ge ....·....·.............·.. ..
(RBE
10 O. Ie
100 rnA. t p
300 J's. df
18%)
Collector-to-Emitter Saturation Voltage
(Ie
150 rnA. IB
15 rnA) ............................................
Base-to-Emitter Voltage Saturation Voltage
(Ie
150 rnA. IB
15 rnA) ........................................... .
Collector-Cutoff Current:
VeR
60 V. IE
O. TA
25°C .................................. ..
VCB
60 V. IE
O. TA
150°C ................................ ..
Emitter-Cutoff Current (VEB
5 V. Ie
0) .............. ..
Pulsed Static Forward-Current Transfer Ratio:
VCE
10 V. Ie
10 rnA. t p
300 p,s. df
1.8%) ....
VeE
10 V. Ie
500 rnA. t p
300 J's. df
1.8%) ..
Static Forward-Current Transfer Ratio:
VeE
10 V. Ie
0.01 rnA. Tc
25°C ................... .
VeE = 10 V. Ie
10 rnA. Te ::::: -55°C .................... .
Small-Signal Forward-Current Transfer Ratio:
VeE
10 V. Ie
5 rnA. f
1 kc/s .......................... ..
VCE
10 V. Ie
50 rnA. f
20 Me/s ...................... ..
TYPICAL COLLECTOR CHARACTERISTICS
75
50
....::;
..J
i
II:
~
()
'"..J..J
\
60
COLLECTOR-TO-EMITTER VOLTS
0
()
0
70
92Cs-ueor
BASE-TO-EMITTER VOLTS (VeEl
92CS-1tII&TI
RCA Transistor Manual
192
CHARACTERISTICS (cont'd)
Input Capacitance (VmB = 0.5 V. Ie = 0) ....................
Output Capacitance (VeB = 10 V. Im = 0) ....................
Noise Figure (Vcm = 10 V. 10 = 0.3 mAo RG == 500.
f = 1 kc/s. circllit bandwidth == 1 cis) ........................
Input Resistance (VeB = 10 V. Ie = 5 mAo f == 1 kc/s)
Voltage-Feedback Ratio (VOB == 10 V. 10
5 mAo
f = 1 kc/s) ................................................................................
Output Conductance (VOB
10 V. Ie == 5 mAo
f
1 kc/s) ................................................................................
Thermal Resistance. Junction-to-Case ............................
Thermal Resistance. Junction-to-Ambient ......................
=
=
=
2N1853
80 max
25 max
pF
pF
hib
8 max
4to8
dB
0
hrb
5x 10'" max
Cibo
Cobo
NF
hOb
9J-0
9J-A
0.1 to 1
58.3 max
219 max
pmho
·C/W
·C/W
COMPUTER TRANSISTOR
Ge p-n-p dilfused.junetion type used in switching applications in military
and commercial data-processing equipment. JEDEC TO-5, Outline No.3.
Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ..................................................
Emitter-to-Base Voltage· ........................................................
Collector Current ........................................................................
Tr~s~~°to ~~dP~~~~:.!. ..............................................................
TA above 25·C ........................................................................
Emitter-to-Base ,Dissipation (Under breakdown conditions with reverse bias) ..................................................
Ambient-Temperature Range:
Operating (TA) and Storage (TsTG) ............................
Lead-Soldering Temperature (10 s max) ........................
-18
-6
-2
-100
VeBo
Vemo
VmBo
10
PT
PT
V
V
V
mA
150
mW
See eurve page 112
PT
25
mW
TL
-65 to 85
235
·C
·C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(10 = -0.025 mAo Im =0) ....................................................
Collector-to-Emitter Breakdown Voltage
(VBm = 0.15 V. 10
-0.025 mA) ....................................
Emitter-to-Base Breakdown Voltage (1m == -0.1 mA.
Ie == 0) ......................................................................................
Collector-to-Emitter Saturation Voltage
(10 = -6 mA. In == -0.2 mAl ..........................................
Base-to-Emitter Voltage (Io == -6 mA. In == -0.2 mAl
Collector-Cutoff Current:
VeB == -15 V. 1m
O.TA == 25·C ....................................
VeB = -18 V. Im = O. TA == 60·C ....................................
Emitter-Cutoff Current (VmB
-2 V. Ie == 0) ............
Static Forward-Current '!'ransfer Ratio:
VeE
-1 V. IB == -0.2 mA ............................................
Vem = -0.4 V. Ie
-6 mA ................................................
Turn-On Time- (Vee == -15 V... RG == 100 0) ..................
Storage Time- (Vee == -15 V ..!-,-G == 100 0) ......................
Turn-Off Time- (Vee == -15 V. RG == 1000) ..................
=
=
=
=
=
V(BR)eBO
-18 min
V
V(BR)emV
-18 min
V
V(BR)mRO
-2 min
V
Vem(sat)
VRm
-0.2 max
-0.4 max
V
V
leBO
leBO
ImBO
-4.2 max
-35 max
-100 max
'1
~A
30 to 400
30 min
0.8 max
0.8 max
0.9 max
p.S
p.S
p.S
hFm
hFm
td +tr
t.
t. + tf
• This rating ma;r be exceeded and the emitter-to-base junction operated in the
breakdown condltion provided tile emitter-to-base dissipation is limited to 25 mUliwatts at 25·C. For ambient temperatures above 25·C. reduce the dissipation.
t For higher dissipation values in switching applications under transient operating
conditions. tile maxinlum dissipation can be computed by utilization of tile method
described in RCA Application Note "Transistor Dissipation Ratings for Pulse and
Switching Service" (AN-181).
- This characteristic applies only to type 2N1853.
2N1854
COMPUTER TRANSISTOR
Ge p-n-p dilfused·junetion type used in switching applications in military
and commercial data-processing equipment. JED EO TO-5, Outline No.3.
Terminals: 1 - emitter, 2 - base, 3 - collector. This type is identical with
type 2N1853 except for the following items:
Technical Data for RCA Transistors
193
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage
(VBE = 0.2 V, Ie = -0.025 mAl ....................................
Collector-to-Emitter Saturation Voltage:
Ie
-20 mA, In
-0.66 mA ........................................
Ie = -80 mA, In = -2.7 mA ..........................................
Base-to-Emitter Voltage (Ic = -20 mA,
In = -0.5 mAl ........................................................................
Collector-to-Emitter Latching Voltage
(Vee = -18 V, RBE
1 kO, R," = 178 0) ....................
Collector-Cutoff Current:
Ven
-15 V, IE
0, TA
65'C ....................................
Static Forward-Current Transfer Ratio:
VCE = -1 V, Ie = -50 mA ................................................
VCE
-0.5 V, Ie
-20 mA ............................................
Gain-Bandwidth Product (VCE
-1 V, Ic
-10 mA,
=
=
hto
=
=
=
=
5)
-IS min
v
VeE (sat)
VeE (sat)
-0.25 max
-0.7 max
V
V
-O.Smax
V
VnE
=
=
V(BR)CEV
=
=
=
......................................................................................
Output Capacitance (VCB = -10 V, b = 0,
f = 140 kc/s) ............................................................................
Charge Storage Time (Ie = -SO mA, In. = -4.5 mA,
Vec = -15 V, RL = 189 0) ................................................
VeERL
-17 min
V
ICBO
-40 max
/LA
hFIO
hFE
400 max
40 min
fT
40 min
Mc/s
Cobo
12 max
pF
tQs
80 max
ns
2N1893
TRANSISTOR
Si n-p-n triple-diffused planar type used in small-signal and medium-power
applications in industrial and military equipment. JEDEC TO-5, Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case. This type is
identical with type 2N2405 except for the following items:
MAXIMUM RATINGS
Collector-to-Emitter Voltage:
RBE ~ 10 0 ............................................................................... .
Base open ................................................................................ ..
Collector Current ...................................................................... ..
Transistor Dissipation:
TA up to 25'C ...................................................................... ..
Te up to 25'C ...................................................................... ..
TA or Te above 25'C ............................................................ ..
Temperature Range:
Operating (Junction) ........................................................ ..
Storage ....................................................................................... .
VeER
VeEo
Ie
PT
PT
PT
100
80
0.5
V
V
A
0.8
W
3
W
See curve page 112
-65 to 200
-65 to 300
'c
VeEo(sus)
VCER(SUS)
80 min
100 min
V
V
VClll(sat)
VCE(sat)
5 max
1.2 max
V
V
TJ(opr)
TSTG
·C
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage:
Ic
30 mA, In
0, t p = 300 /LS, df
1.8% .......... ..
Ie
100 mA, RnE
10 0, t p
300 /LS, df
1.8% .. ..
Collector-to-Emitter Saturation Voltage:
Ie
150 mA, In = 15 mA .............................................. ..
Ie
50 mA, In
5 mA .................................................. ..
==
==
=
=
= =
=
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2NI893
COMMON-EMITTER CIRCUIT, 8ASE INPUT.
AMBIENT TEMPERATURE' 25° C
i
~IO
-'
!!i8
It:
I---
o
\:;6
....
~I-""
~&l(li) = 1 V ............................................. .
VeE
-40 V. VnE
-1 V. TMF
55°C ................... .
VeE
-40 V. In
0 ......................................................... .
=
=
=
=
==
=
=
~~U~e~;r~~~d_'b~:re~t !lr~~sfur-J1ti~·
Ie
0) ....... .
VeE = -2 V. Ie = -5 A ....................................................
VCI' = -2 V. Ie = -1 A ....................................................
Small-Signal Forward-Current Transfer Ratio:
VeE
-5 V. Ie
-0.5 A. f
1 kc/s ....................... .
VeE
-5 V. Ie
-0.5 A. f
1 Mc/s ....................... .
=
=
=
=
==
VeE (sat)
VBE
-1 max
-0.5 max
V
V
leBo
IeEv
IeEO
-lOmax
-3 max
-75 max
-2.5 max
mA
mA
mA
rnA
lEBO
hFE
hFE
30 min
50 to 150
hie
hr.
30 to 200
2 min
2N1906
POWER TRANSISTOR
Ge p-n-p drift-field type used in power-switching circuits, dc-to-dc converters, inverters, ultrasonic oscillators, and large-signal wide-band linear
amplifiers. Similar to JEDEC TO-3, Outline No.2 (variant 2). Terminals:
1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case. This
type is identical with type 2N1905 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ................................................
CHARACTERISTICS (At mounting-flange temperature
Collector-to-Emitter Sustaining Voltage
(Ie = -100 rnA. In = 0) ....................................................
Collector-to-Emitter Saturation Voltage
(Ie = -5 A. In
-0.25 A) ............................................
Collector-Cutoff Current (VeB = -130 V. VBE (Ii) = 1 V)
Static Forward-Current Transfer Ratio:
VeE = -2 V. Ie = -5 A ....................................................
VeE
-2 V. Ie
-1 A ....................................................
Small-Signal Forward-Current Transfer Ratio:
VeE = -5 V. Ie = -0.5 A. f
1 kc/s ........................
1 Mc/s ........................
VeE = -5 V. Ie = -0.5 A. f
=
=
=
==
=
V
-130
-60
V
-60 min
V
-0.5 max
-10 max
V
rnA
VeBo
VeEo
25°C)
VeEO (sus)
VeE (sat)
leBO
hFE
hFIil
75 max
75 to 250
hr.
hr.
50 to 300
3 min
TYPICAL COLLECTOR CHARACTERISTICS
T~PE 12NI~06 I
-
I
I
I
I
I
COMMON-EMITTER CIRCUIT. BASE INPUT.
MOUNTI NG -FLANGE TEMPERATURE- 25°C
l-
...-
-!!I
--;!!.
-
-2!i
-20
-§.
r"
-:.!2.
I
o
BASE MLUAMPERES·-5
-5
-
-
-
-
I
I
-35
-40
92CM-I09HT1
TYPICAL OPERATION IN POWER-SWITCHING CIRCUIT
(At mounting-flange temperature
= 25°C)
DC Collector-Supply Voltage ..............................
On DC Collector Current ................................... .
Turn-On DC Base Current ................................
Vee
Ie
IB1
5
-1
12.5
-2.5
-0.25
12.5
-5
-0.25
V
A
A
RCA Transistor Manual
196
TYPICAL OPERATION (cont'd)
Turn-Off DC Base Current ................................
Pulse-Generator Open-Circuit Voltage ........
Base-Bias Resistor ................................................
Speed-Up Capacitor ............................................
Load Resistor ............................................................
Generator Impedance ............................................
Delay Time ..............................................................
Rise Time ..................................................................
Storage Time ............................................................
Fall Time ..................................................................
lB.
2
75
0.1
5
5
0.1
0.1
1
0.6
E
Rl
C,
R.
RG
t.
tr
t.
tf
0.25
0.25
5
5
5
5
0.1
0.4
7
2.5
5
0.1
0.9
7
2
1
A
V
n
n
n
p.F
p.s
p.s
p.s
p.s
OUTPUT
VOLTAGE
R2
+
92CS-II009R2
2N2015
POWER TRANSISTOR
Si n-p-n diffused-junction type used in dc-to-dc converter, inverter, chopper, relay-control, oscillator, regulator, pulse-amplifier circuits; and
class A and class B push-pull amplifiers for af and servo amplifier applications. JEDEC TO-36, Outline No.11. Terminals: Lug 1 - base, Lug 2 emitter, Mounting Stud - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage .................................................... ..
Collector-to-Emitter Voltage ............................................... .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ....................................................................... .
Emitter Current ........................................................................ ..
Base Current ............................................................................... .
Transistor Dissipation:
To up to 25°C ........................................................................ ..
To above 25°C ...................................................................... ..
Case-Temperature Range:
Operating (Te) and Storage (TSTG) ............................ ..
Lug-Soldering Temperature (10 s max) ........................ ..
----:1
1 ---
25
-65
175
1000 f--
~ 750
III
;l
~50
Q
.~ V
0.5
,'", /
I
6
-65 to 2 0 0 ° C
235
°C
T(lug)
TYPE 2N20U'l
COMMON-EMITTER CIRCUIT, BASE INPUT.
COLLECTOR-TO-EMITTER VOLTS (VCE)c4
I
CASE (Tcl-·C
TEMPERATURE
CURVE
25
-65
175
t--f- - -
-------
!t~,
~
1.5
V
A
A
A
150
W
See curve page 112
,
,.-t-/
500
IE
In
V
V
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
TYPICAL BASE 'CHARACTERISTICS
TYPE 2N2015
COMMON - EMITTER CIRCUIT, BASE INPUT.
f-- COLLECTfR-TO- EMITTER VOLTS. 4
CURVE CASE TEMPERATURE _·C
13
100
50
10
10
-13
VeBO
VeEo
VEBO
Ie
~ ~ ........- ...
....... ....:::
2
2.5
3
~ASe;-TO-EMITTe:R VOLTS
~2C~-\lQ93TI
o
2
4
:::::r=::::,;
-.-
6
8
~
~
COLLECTOR AMPERES (IC)
92CS-II09OTI
197
Technical Data for RCA Transistors
= 25°C)
CHARACTERISTICS (At case temperature
Collector-to-Emitter Voltage (VBm = -1.5 V.
Ic = 2 rnA)' ............................................................................
Collector-to-Emitter Sustaining Voltage (Ic = 200 rnA.
IB
=
0)
......................................................................................
Collector-to-Emitter Voltage (Ic = 5 A. IB = 0.5 A)
Base-to-Emitter Voltage (Vcm = 4 V. Ic = 5 A) ....... .
Collector-Cutoff Current:
VCE = 40 V. IB = 0 ........................................................... .
VCE = 100 V. VBI' = -1.5 V ........................................... .
VCE = 30 V. VBI' = -1.5 V. Tc = 150·C ..................... .
Emitter-Cutoff Current (VEB = 10 V. Ic = 0) ........... .
Static Forward-Current Transfer Ratio:
VCE
4 V. Ic
5 A ........................................................
Vcm = 4 V. Ic = 9 A ....................................................... .
Small-Signal Forward-Current Transfer Ratio
(VCE
4 V. Ic
1 A. f
1 kc/s) ............................... .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCE
4 V. Ic = 5 A) .•........••....................
Collector-to-Emitter Saturation Resistance
(Ic = 5 A. IB = 0.5 A) ....................................................... .
Output Capacitance (Vcn = 40 V. Ic = 50 Jl.A.
f = 1 Mc/s) ........................................................................... .
Thermal Resistance. Junction-to-Case ............................. .
=
=
=
=
=
=
100 min
V
VCEO(SUS)
VCE(sat)
VBI'
50 min
1.25 max
2.2 max
V
V
V
ICEO
ICEv
ICE V
IEno
0.2 max
2 max
2 max
0.05 max
rnA
VCEV
rnA
rnA
rnA
15 to 50
Smin
12 to 60
hte
12 min
fhte
kc/s
rCE(sat)
0.25 max
0
Cobo
400 max
1.17 max
pF
°C/W
9J-G
TYPICAL COLLECTOR CHARACTERISTICS
o (
J
90~
I
1
1 I
TYPE 2N2015 I
COMMON-EMITTER CIRCUIT. BASE INPUT.CASE TEMPERATURE = 25"C
1
7 0
600
8
500
400
BASE MILLIAMPERES-300
100
100
2
30
--
/
II
./ )
l/
10
o
10
20
30
40
50
60
COLLECTOR-TO-EMITTER VOLTS
70
80
92CM-II092T2
2N2016
POWER TRANSISTOR
Si n-p-n diffused-junction type used in dc-to-dc converter, inverter, chopper, relay-control, oscillator, regulator, and pulse-amplifier circuits; and
class A and class B push-pull amplifiers for af and servo amplifier applications. JEDEC TO-36, Outline No.11. Terminals: Lug 1 - base, Lug 2 emitter, Mounting Stud - collector and case. This type is identical with
type 2N2015 except for the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ................................................. .
VCBO
VCEO
130
65
VCEV
V
V
CHARACTERISTICS
Collector-to-Emitter Voltage (VBm = -1.5 V.
Ic = 2 rnA) ............................................................................
Collector-to-Emitter Sustaining Voltage (Ic
200 rnA.
IB = 0) ......................................................................................
Collector-Cutoff Current (Vcm = 130 V.
VBm
-1.5 V) ........................................................................
=
=
130 min
V
Vcmo(sus)
65 min
V
ICEV
2 max
rnA
RCA Transistor Manual
198
2N21 02
TRANSISTOR
Si n-p-n triple-diffused planar type used in small-signal and medium-power
applications in industrial and military equipment. This type features exceptionally low-noise low-leakage characteristics, high switching speed,
and high pulse hFE. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector-to-Emitter Voltage:
RBE~10n ........................................................................... .
Base open ..................................................................................
Emitter-to-Base Voltage ....................................................... '"
Collector Current ........................................................................
Transistor Dissipation:
1~ ~ ~25;~C···::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
TA or Te above 25·C .........................................•....................
Temperature Range:
Operating (Junction) ........................................................... .
Storage ...:................................................................................... .
Lead-Soldering Temperature (10 s max) ....................... .
CHARACTERISTICS (At
case temperature
=
=
===
=
=
=
=
=
=
=
=
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N2102
COMMON-EMITTER CIRCUIT, BASE INPUT.
~IO AMBIENT TEMPERATURE -25·C
......
~f:>
0:
lEB
c
o
..I
~
It:
~4
82
o
1
W
5
W
See curve page 112
TJ(opr)
TSTG
TL
-65 to 200
-65 to 300
300
·C
·C
·C
V(BR)CBO
120 min
V
V
..,
l-
/
-3
/
f.:
:1-2
/
o
u
-
-0.2
-0.4
0.6
BASE-TO-EMITTER VOLTS
-
O.B
HCSHl!29n
1/
IV
o
V
V
-10
-20 -30 -40 -50 -60
. BASE MILLIAMPERES (I al
t2cS-10995TI
202
RCA Transistor .Manual
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N2148
COMMON-.EMITTER CIRCUIT, BASE INPUT.
MOUNTING-FLANGE TEMPERATUREa.25" C
It
'" -5
I&J
..J
-4
8 -3
tV ...-
-3~
-30
-25'
BOUNDARY OF
~ENDED OPERATING
.
REGION
-20
-2
I I
;-f...J
-~-10
I
BASE MILLIAMPERES =-5
o
-5
-10
-15
-20
-25
- r-- -30
-35
COLLECTOR-TO-EMITTER VOLTS
-40
92CM-I0999T3
CHARACTERISTICS (cont'd)
=
Base-to-Emitter Voltage (VeE
-10 V,
Ie == -50 rnA) ........................................................................
Collector-Cutoff Saturation Current (VeB == -0.5 V,
IE
0) ......................................................................................
Emitter-Cutoff Current (VEB == -1.5 V. Ie == 0) ........
Static Forward-Current Transfer Ratio (VeE
-1 V.
Ie == -1 A) ............................................................................
Gain-Bandwidth Product (VeE
-5 V.
Ie == -500 rnA) ........................................................................
=
=
=
VBE
leBO (sat)
lEBO
-0.26
V
-100 max
-10 max
/LA
rnA
60rnin
hFE
iT
3 typ
Mc/s
TYPICAL OPERATION IN "SINGLE-ENDED PUSH-PULL" CLASS B
AF-AMPLIFIER CIRCUIT (At mounting-flange temperature
25°C)
DC Co.Hector Supply Voltage .............................................. ..
Zero-SIgnal DC Collector Current ...................................... ..
Zero-Signal Base-Bias Voltage ........................................... .
Peak Collector Current .......................................................... ..
-16.5
-0.05
-0.26
-2.7
Vee
Ie
ie(peak)
Vec.
+
Vee
+
=
Vee
16.5 volts
== 270 ohms, 2 watts
R2. R. == 3.9 ohms, 0.5 watt
R •• R. == 0.39 ohm. 0.5 watt
Voice coil
impedance == 4 ohms
'Rl, Ra
92.CS-1I332RZ
V
A
V
A
Technical Data for RCA Transistors
203
TYPICAL OPERATION (cont'd)
Maximum-Signal DC Collector Current ............................
Input Impedance of Stage (per base) .............................. ..
Load Impedance (speaker voice-coil) ............................
Maximum Collector Dissipation (per transistor)
under worst-case conditions ............................................ ..
EIA Music Power Output Rating ........................................
Power Gain ................................................................................ ..
Maximum-Signal Power Output ..........................................
Total Harmonic Distortion at Maximum-Signal
Power Output ........................................................................ ..
10 (max)
RL
POE
-0.85
65
4
A
0
0
7.5
25
31
15
W
W
dB
W
5
%
2N220S
COMPUTER TRANSISTOR
Si n-p-n double-diffused epitaxial planar type used in high-speed switching applications in military and industrial equipment where high reliability
and high packaging densities are essential. JEDEC TO-IS, Outline No.9.
Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Latching Voltage (RRE == 1000 0,
RL == 100 0) ..............................................................................
Collector-to-Emitter Voltage ................................................. .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ....................................................................... .
Transistor Dissipation:
TA up to 25°C ........................................................................
To up to 25°C ...................................................................... ..
TA or To above 25°C .............................................................. ..
Temperature Range:
Operating (TA or To) ....................................................... .
Storage ....................................................................................... .
Lead-Soldering Temperature (10 s max) ........................
CHARACTERISTICS
=
=
=
:g
z
8...
'"
o
z
...
,
120
'"o
I OO~
\,
~
~I 5
z
75
~
10
5
o
-0.2
"
-04
-06
08
~
...
50 !
...
~ :--.....
It:
...J
...J
25
-I
TURN-OFF BASE MILLIAMPERES (1B2'
92CS-II380TI
V
V
V
A
0.3
W
1
W
See curve page 112
-65 to 175
-65 to 300
235
°C
°C
°C
V(BR)CBO
25 min
V
V(RR)EBO
3 min
V
VCE~sat)
0.22 max
0.35 max
V
V
VeE sat)
0.7 to 0.9
V
leBO
VBE(sat)
0.025 max
15 max
15 max
p,A
p,A
p,A
hFE
20 min
h,_
2 min
leBo
leE v
TYPICAL TURN-ON CHARACTERISTICS
JUNCTION TEMPERATURE (TJIS:25"C- 1258
z
V
20
12
3
0.2
TSTo
TL
=
~~ti:C~.r~~EL'i'l'M'il~~Gi\'zE~~I~BII.1
...'"
z
~
=
=
TYPICAL TURN-OFF CHARACTERISTICS
TYPE 2N2205
COMMON-EMITTER CIRCUIT, BASE INPUT.
o
...;::~
=
=
=
25
VCERL
VOEO
VERa
Ic
PT
PT
PT
=
Collector-to-Base Breakdown Voltage (10
0.1 mA,
lE == 0) .................................................................................... ..
Emitter-to-Base Breakdown Voltage (lE == 0.1 mA,
Ic == 0) ..................................................................................... .
Collector-to-Emitter Saturation Voltage:
Ic == 10 mA, ID == 1 mA .................................................. ..
Ic = 50 mA, ID == 5 mA .................................................. ..
Base-to-Emitter Saturation Voltage (10 == 10 mA,
ID = 1 mAl .......................................................................... ..
Collector-Cutoff Current:
VCR
15 V, IE
0, TA
25°C ...................................... ..
VeR
15 V, IE
0, TA
150°C .................................... ..
VeE
10 V, VBE
0.35 V, TA
100°C ...................... ..
Statie Forward-Current Transfer Ratio (VeE = 1 V,
Ie = 10 mAl .......................................................................... ..
Small-Signal Forward-Current Transfer Ratio
(VeE = 10 V. Ie = 10 mA, f = 100 Me/s) .................. ..
VORO
o
if
.,o
TYPE 2N2205
'"z
g8~~RcNTirl~Tti~A~~~~~ 8:~~I~PU
o
z
o
o
JUNCTION TEMPERATURE (Td,·25·C
lil25
o
~,
z~20
_
u
50l:l
d'15
...
...
Io!!!
'"
,
...::Ii 10
;::
~ 5
...o
"\,
~
~
~
~
o
z
40~
.!.
30!
20!
It:
...J
o
o
2
4
6
8
TURN-ON BASE MILLIAMPERES (IBI'
92CS-1I3B4T
204
RCA Transistor Manual
CHARACTERISTICS (cont'd)
=
=
Output Capacitance (VeB
10 V. IE
O.
f = 0.14 Mc/s) ....................................................................... .
Storage Time (Vee
10 V. Ie
10 rnA.
In.
10 rnA. In. == -10 rnA. Re = 1000 0) ................
=
=
=
CObo
~~-~n3T~;. t~.e~=_10~fe ~ ~~ ~:
Turn-Off Time (Vee = 10 V. Ie = 10 mAo
In. == 3 rnA. ID. == -1 rnA) .......................................... ..
. . . . . . ....................
2N2270
6 max
pF
25 max
ns
40 max
ns
75 max
ns
TRANSISTOR
Si n-p-n triple-diffused planar type used in rf-amplifiers, mixers, ~scilla
tors, and converters, and in at small-signal and power amplifiers. JEDEC
TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector-to-Emitter Voltage:
RBE ~ 10 0 ............................................................................
Base open ..................................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current .....................•..............................•....................
Tr~s~~°io ~lf.'lr~~.~~~:.................................................................
Te up to 25'C •...............•........•..............................................
TA or Te above 25·C ..............................................................
Temperature Range:
~l:,~~~~~... ~~~~~~~~.... ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Lead-Soldering Temperature (10 s max) ........................
CHARACTERISTICS (At case temperature
=
=
=
=
~2r~_~~R~~llll:A~~~~P;.FBt>~~~'i~UT.
....'"
Z
...
V
60
V
V
V
A
45
7
1
PT
PT
PT
1
W
5
W
See curve page 112
Tl(opr)
TSTG
TL
-65 to 200
-65 to 200
255
·C
·C
·C
V(BR)CBO
60 min
V
V(BR)IIlBO
7 min
V
Velllo(sus)
VeItR(sus)
45 min
60 min
V
V
V
Velll(sat)
0.9 max
VBE(sat)
1.2 max
V
leBO
leBO
lEBO
0.1 max
50 max
0.1 max
p.A
hFE
(pulsed)
p.A
p.A
50 to 200
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
TYPE 2N2270
COLLECTOR-TO-EMITTER VOLTS (VCE)-IO
IL
:
60
VelllR
VCIllO
VIIlBO
Ic
= 25°C)
Collector-to-Base Breakdown Voltage (Ie
0.1 rnA.
IE == 0) ......................................................................................
Emitter-to-Base Breakdown Voltage (IE == 0.1 mAo
Ie = 0) ......................................................................................
Collector-to-Emitter Sustaining Voltage:
Ie == 100 rnA. tp == 300 )LS. df == 1.8% ........................... .
Ie == 100 rnA. Rnlll
10 O. t p == 300 )LS. df = 1.8% ....
Collector-to-Emitter Saturation Voltage (Ie == 150 mA,
ID = 15 rnA) ............................................................................
Base-to-Emitter Saturation Voltage (Ie = 150 rnA.
ID == 15 mAl ...••.........•.............................................................
Collector-Cutoff Current:
VeB == 60 V, IE
0, Te = 25·C ...................................... ..
VeB = 60 V, IE == 0, Tc = 150'C ......................................
Emitter-Cutoff Current (VEB = 5 V, Ie == 0) .............. ..
Pulsed Static Forward-Current Transfer Ratio:
(VeE == 10 V, Ie
150 mA, t p == 300 p.s, df = 1.8%)
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N2270
VeBO
200~--~-----+-----+----~----~
.....
a2 1201----+~
lz ... 160~--~-----+~
a:.c
,~
:ila: 80
~
a:
...uo
c
BASE MILLIAMPERES(Isl'O
024681012
COLLECTOR-TO-EMITTER VOLTS (VCE)
.zea-lIIatT
gO~I~2-7.~.~~~I~~I~-L~10~~1~0--0L-~10·00
COLLECTOR CURRENTlIG)-MILLIAMPERES
92CS-1II81T2
Technical Data for RCA Transistors
205
CHARACTERISTICS (cont'd)
Static Forward-Current Transfer Ratio
(VCE = 10 V. Ie
1 rnA) ................................................
Small-Signal Forward-Current Transfer Ratio:
VCE
10 V. Ie = 5 mAo f == 1 kc/s ................................
VCE == 10 V. Ic = 50 mAo f == 20 Mc/s ....................... .
Input Capacitance (VEB = 0.5 V. Ie = 0) ....................... .
Output Capacitance (VCB
10 V. IE = 0) ....................
Noise Figure (Vec
10 V. Ie
0.3 mAo
RG
1000 n. f
1 kc/s. circuit bandwidth
1 cis)
Thermal Resistance. Junction-to-Case ............................. .
Thermal Resistance. Junction-to-Ambient ................... .
=
=
==
=
= =
hFE
35 min
hr.
hr.
30 to 180
3 min
80 max
15 max
elbo
Cobo
=
6 max
35 max
175 max
pF
pF
dB
·C/W
·C/W
2N2338
POWER TRANSISTOR
Si n-p-n diffused-junction type used in dc-to-dc converters, inverters, choppers, and relay-control circuits; in oscillators and voltage- and currentregulator circuits; and in dc and servo-amplifier circuits. JEDEC TO-36,
Outline No.n. Terminals: Lug 1 - base, Lug 2 - emitter, Mounting Stud collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE = -1.5 V ........................................................................
Base open ................................................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Base Current .............................................................................. ..
Transistor Dissipation:
Tc up to 25·C ....................................................................... .
Tc above 25·C ....................................................................... .
Temperature Range:
Operating (Junction) .......................................................... ..
Storage ...................................................................................... ..
Lug-Soldering Temperature (10 s max) ..........................
VCBO
60
V
VCEV
VCEO
VEBO
V
V
V
A
A
IB
60
40
6
7.5
5
PT
PT
150
W
See curve page 112
TJ(opr)
TSTG
T(lug)
-65 to 200
-65 to 200
235
·C
·C
·C
VCEV
60 min
V
VCEO(SUS)
40 min
V
3.5 max
1.5 max
V
V
3 max
V
10
CHARACTERISTICS
Collector-to-Emitter Voltage (VBE = -1.5 V.
Ic
2 mAl .......................................................................... ..
Collector-to-Emitter Sustaining Voltage
coH~cfur:~-~it!; sa::1niti~il: ..
Ie == 6 A. IB = 1 A .......................................................... ..
Ie
3 A. lB = 0.3 A ..........................................................
Base-to-Emitter Saturation Voltage (VCE == 4 V.
Ic == 3 A) ............................................................................... .
=
voitage·: ................· .........
=
VCE ~sat)
VCE sat)
VBE
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N2338
COMMON -EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURr 25° C
8
7J
f3
0:
600
500
400
UJ
~6
0:
300
~
lil4
200
:::l
o
u
BASE MILLIAMPERES = 100
2
o
E:- 'l
10
20
50
30
..,/
10
0
30
40
50
60
COLLECTOR-TO-EMITTER VOLTS
70
80
92CM-11556TI
206
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Collector-Cutoff Current:
VCB
30 V. I"
O. Tc = 25°C ....................................... .
VCB
30 V. 1m
O. Tc = 150°C ......................................
Vc" = 30 V. IB = 0 .............................................................. ..
Vc"
60 V. VB"
-1.5 V. Tc
25°C ...................... ..
Vc"
30 V. VB"
-1.5 V. Tc
200°C .................... ..
Emitter-Cutoff Current (V"B = 6 V. 10
0) ................
Static Forward-Current Transfer Ratio (Vc"
4 V.
Ic
3 A) ................................................................................
Small-Signal Forward-Current Transfer Ratio
(Vc" = 4 V. Ic = 0.5 A. f = 1 kc/s) .......................... ..
Output Capacitance (VCB = 40 V. 1m
O. f = 0.1 Mc/s)
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (Vc"
4 V. Ic
5 A) .............................. ..
Collector-to-Emitter Saturation Resistance
(Ie = 3 A. IB = 0.3 A) ........................................................
Thermal Time Constant ........................................................... .
Thermal Resistance. Junction-to-Case ............................
=
=
=
=
=
=
=
=
=
=
= =
=
=
=
=
mA
mA
mA
mA
mA
mA
leBO
ICBo
IeEo
ICE V
IeEv
ImBO
0.2 max
3 max
5 max
2 max
50 max
0.1 max
hE'E
15 to 60
h
~_TO_Elo\lJER v1__!'s (~
~V.r;
a:o
.!oa:
a: 20
1 1LI
hFE
hf.
.~
1.C~
1.2
I. I
......-: ::::;;; ~ '1.
0
I
I
~0.9
...
~o.B
I
ID
0.7
o
,
~~
'?"
~ P"
100 200 300 400 500 600 700 800 900
COLLECTOR MILLIAMPERES CIcl
12eS-IIrlrT
211
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
storage Time (Vee = 6.4 V, Re = 40 n,
lBl
15 rnA, lB.
-15 rnA, Ie
150 rnA)
Turn-On Time (Vee
6.4 V, lBl = 15 mA,
IB2 = -15 rnA, Ie = 150 rnA) ........................................
Turn-Off Time (Vee = 6.4 V, 1B1 = 15 rnA,
lB. = -15 rnA, Ie = 150 rnA) ........................................
=
==
=
TYPICAL DELAY-TIME AND RISE-TIME
CHARACTERISTICS
t.
25 max
ns
+ tr
t. + tr
25 max
ns
45 max
ns
td
TYPICAL STORAGE·TIME CHARACTERISTICS
TYPE 2N2476
gg~m",:6~111mg~'1fEu~~sBtI~1.'rfoUT.
TYPE 2N2476
gg~t'E'l:~il'RMU",ItrA~'~i~~s ~~~~I~~UT.
FREE'AIR TEMPERATURE (TFA) =25" C
~
..
LOAD RESISTANCE (RLl- 40 OHMS
FREE-AIR TEMPERATURE (TF,v=25'C
......
.
~
\
"''0",
~ ~4SE
"I'-...
--
............
""L- - + - - -
--
b-... '-..~~~srr
•
8)=20
..t
r-
'd
10
16
6
8
12
14
TURN-ON BASE MILLIAMPERES (IBI)
o
I
~ I---
15
105
5
10
15
20
TURN·OFF BASE MILLIAMPERES (IB~
92CS~II769T
92CS·11762T
2N2477
COMPUTER TRANSISTOR
Si n-p-n double-diffused epitaxial planar type used in core-driving and linedriving applications where high switching speeds at high current are primary design requirements. JEDEC TO-5, Outline No.3. Terminals: 1 emitter, 2 - base, 3 - collector and case. This type is identical with type
2N2476 except for its switching characteristics and the following items:
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage:
Ie
150 rnA, IB = 3.75 rnA ........................................... .
Ie = 500 rnA, IB = 50 rnA ........................................... .
Base-to-Emitter Voltage (Ie
150 rnA, IB = 3.75 rnA)
Static Forward-Current Transfer Ratio
(VeE = 0.4 V, Ie
150 rnA) ........................................... .
=
=
TYPICAL DC FORWARD-CURRENT
TRANSFER - RATIO CHARACTERISTICS
TYPE 2N2477
COMMON-EMITTER CIRCUIT,BASE INPUT.
FREE-t'R TEMP~ATURE (TFA) 0 25'
ffi
I:;
60
!
50
z
~"'OR-TO'E4l ~
1-";;,
(,0'-"
~~40
\
~~ 30
'2:
20
0:
~~
h~
.~
-
•
6.,00
2
4
6
COLLECTOR MILLIAMPERES (lei
2
40roin
~~~~~~·~~:J:lR~~~~~\Tt~:)~1~N!CUT.
t
BASE MILLIAMPERES =IB
(I)
!:l
g
1.2
a:
I
\9·,6
'"
2 I
'" 0.9
~
.:.
~ 0.8
0.7
o
0
•1000
92C$-11756T
V
V
V
TYPICAL TRANSFER CHARACTERISTICS
TYPE 2N2477
0:.
III
10
10
0.4 max
0.65 max
0.95 max
lI-
~
~....
00:
~
u
o
71'}'<,,~ "
~
0:0
i
=
VeE (sat)
VeE (sat)
VBE
~~
~~
--
~~~o~;;...-~o
:;;;0-
I
200
400
600
BOO
COLLECTOR MILLIAMPERES (Ic)
92CS-l/759T
RCA Transistor Manual
212
2N2613
TRANSISTOR
Ge p-n-p alloy-junction type used in small-signal and low-power audio frequency applications. It is a low-noise type for use in input and low-level
stages. JEDEC TO-I, Outline No.1. Terminals: I - emitter, 2 - base, 3 collector.
MAXIMUM RATINGS
-30
-25
-25
-50
50
VCBO
VcmR
VmBo
Ic
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage (RBm
10 kO) ................
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Emitter Current ......................................................................... .
=
IE
Tr~~~o~oD~~~iCa~~~~.: .................................................................
V
V
mA
mA
120
mW
See curve page 112
PT
PT
TA above 55'C ........................................................................
TeD1perature Range:
Operating (Junction) ........................................................... .
Storage ................•.......................................................................
Lead-Soldering TeD1perature (iO s max) ....................... .
V
TJ(opr)
TSTO
-65 to 100
-65 to 100
'c
'c
-30 min
V
-25 min
V
-25 min
V
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
co~~~o~t~JnJr~ B~~~tro~ ·Viiitage····························
V(BR)CBV
V(BR)CER
(RRE = 10000 0, Ic = -1 mA) ........................................
Emitter-to-Base Breakdown Voltage
(IE = -0.05 mA, Ic :=: 0) ....................................................
TYPICAL NOISE-FIGURE CHARACTERISTICS
'II
,
V(BR)EBO
TYPICAL TRANSFER CHARACTERISTIC
TYPE 2N2613
COMMON-EMITTER CIRCUIT, BASE INPUT.
TYPE 2N2613
COMMON -EMITTER CIRCUIT, BASE INPUT.
FREE-AIR TEMPERATURE (TFl\)025°C
REFERENCE FREQUENCY-I k cIs
GENERATOR RESISTANCE"IOOO OHMS
CIRCUIT BANDWITH 01.1 k e/8
a~~lo1~¥b~~W~ft=25°
~6~--~--~~~~~~---4--~
I
6
ii:
'" 4~--~--1--:I
!!!
~-4
'"
~-2
o
z2~~-C~~~~~~~~__~
o
o
-I
-2
COLLECTOR MILLIAMPERES
-I
-2
-3
-4
-5
-3
(Iel
-6
C-r-
VOLTS 0-4
/
'/
50 -100 -150 -200 -250
-BASE-TO-EMITTER
MILLIVOLTS
o
-7
/
COLLECTOR- TO-EMITTt:R VOLTS (VCE)
92C·S';;1I84211
82C8-I1857T2
TYPICAL COLLECTOR CHARACTERISTICS
7-
6
/'
-)/ ",..,,J./
/'/
5
,...."
4
/'
V~
3/
~f.--
,...."
~
P
1--1--
-'lCQ
~
f..--I-
BASE MIC
-I
AMBIENT TEMPERATURE" 25" C
.....-
-I
o
COr:R~lrf~JE"ER CIRCUIT,
,...."
------- -
....V?'
// /
TYPE 2N2613
1,.0"""""-
-2 -3
-4
-5
-6
-12-
~PERESo'-5.
-7
-8
-9
-10
COLLECTOR-TO-EMITTER VOLTS
1I2CM-UI54T
213
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
=
=
Collector-Cutoff Current (VeB
-20 V. IE
0)
Emitter-Cutoff Current (VEB = -20 V. Ie = 0)
Intrinsic Base Spreading Resistance
(VeE
-4.5 V. Ie
-0.5 rnA. f
20 Mc/s) ........... .
Collector-to-Base Feedback Capacitance
(VeE == -4.5 V. Ie
-0.5 rnA) •.......................................
Small-Signal Forward-Current Transfer Ratio
(VCE == -4 V. Ie == -0.5 rnA. f
1 kc/s) ....................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCE == -4.5 V. Ie = -0.5 rnA) ................
RMS Noise Input Current (Equivalent)
(VeE == -4.5 V. Ie == -0.5 rnA. RUE
5000 n.
f == 20 to 20000 cIs) ................................................................
Noise Figure (Circuit bandwidth == 1.1 kc/s.
(VeE == -4.5 V. Ie
-0.5 rnA. RG
1000 n.
f == 1 kc/s) ................................................................................
=
=
=
=
=
300
0
Cb'c
10
pF
hr.
120 min
=
=
=
p,A
p.A
-5 max
-7.5 max
leBO
lEBO
10
Mc/s
0.001 max
p.A
4 max
dB
NF
2N2614
TRANSISTOR
Ge p-n-p alloy-junction type used in small-signal and low-power audio frequency applications. JEDEC TO-l, Outline No.!. Terminals: 1 - emitter,
2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage (RBE == 10 kO) ................
Emitter-to-Base Voltage .........................................................•
Collector Current ........................................................................
Emitter Current ..........................................................................
Transistor Dissip,ation:
TA up to 55 C .......................................•.....................•..........
Te up to 55 D C ................•..............•...............................•....••......
TA or Te above 55 DC ............................................................
Temperature Range:
Operating (Junction) ........................................................... .
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ........................
-40
--35
-25
-50
50
VeBo
VeER
VEBO
10
IE
V
V
V
rnA
rnA
120
mW
300
mW
See curve page 112
DC
-65 to 100
DC
-65 to 100
DC
255
PT
PT
PT
TJ(opr)
TSTG
TL
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(Ie == -0.05 rnA. VBE
2 V) .......................................... ..
Collector-to-Emitter Breakdown Voltage
(Ie == -1 rnA. RBE
10 kn) .......................................... ..
Emitter-to-Base Breakdown Voltage
(IE
-0.05 rnA. Ie == 0) .................................................. ..
Collector-Cutoff Current (VeB == -20 V. IE == 0) .. ..
Emitter-Cutoff Current (VEB
-20 V. Ie == 0) ....... .
Small-Signal Forward-Current Transfer Ratio
(VeE == -6 V. Ie == - I rnA. f == 1 kc/s) ....................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VOE == -6 V. Ie
- I rnA) ....................
Collector-to-Base Feedback Capacitance
(VeE == -6 V. Ie == -1 rnA) ............................................
Intrinsic Base-Spreading Resistance
(VeE == -6 V. Ie == -1 rnA. f == 20 Mc/s)
=
=
=
=
=
TYPICAL TRANSFER CHARACTERISTIC
TYPE 2N2614
COMMON-EMITTER CIRCUIT. BASE INPUT.
AMBIENT TEMPERATURE. 25" C
r3
SO
::E -40
I
iii -30
{!!
~
8
-10
o
-40 min
V
V(BR)OER
-35 min
V
V(BR)EBO
lOBO
-25 min
-5 max
-7.5 max
p.A
p.A
IElBO
V
hre
100 min
fllfe
10
Mc/s
Cb'c
9
pF
rbb'
300
0
TYPICAL TRANSFER CHARACTERISTIC
TYPE 2N2614
COMMON-EMITTER CIRCUIT, SASE INPUT.
FREE-AIR TEMPERATURE (TFA)=25"C
COLLECTOR-TO-EMITTER VOLTS (VCE)=-6
8
13-50
...
II:
IU
~-40
c
3-30
iii
11
~ -20
V(BR)CBV
~
,,/'
V
./
~-20
.t
~
~-IO
0'''2
~
COLLE.~
-50 -100 -150 -200 - :>U- uuBAS£-TO-EMITTER MILLIVOLTS
HCS-_
,..,
8
o
V
V
.,/
./
-50
/'
-100
-150
-200
BASE MICROAMPERES (lSI
92CS'II8!iIT2
214
RCA Transistor Manual
TYPICAL COLLECTOR CHARACTERISTICS
_~~
-110
TYPE 2N2614
COMMON-EMITTER CIRCUIT. BASE INPUT.
n~ ~ AMBIENT TEMPERATURE -25" C
''7'JK.t
v. . . ~~""
-40
;
'//~
1-30 Vv ~~
~
~V~~
or:
/'''''
Iil
r
~-~
~~
~~ ..
~~I~-+-~-+~--~~-r-+~--~~~
_-
8- ",~~~~lI~==j:=+~-~I~t--t--t-I!-jj-l-~--t--t--j
. . . . __ -10 ~
':0.05
o
-4
-6
BASE MILLIAMPERE • 0
-12
-14
-8
-10
COLLECTOR-TO-EMITTER VOLTS
2N2631
-16
92CM-1I836T
POWER TRANSISTOR
Si n-p-n' triple-diffused planar type used in large-signal vhf applications
such as AM, FM, and cw service at frequencies up to 150 Me/ s in industrial and military equipment. JEDEC TO-39, Outline No.12. Terminals:
1 - emitter, 2 - base, 3 - collector and case. This type is identical with type
2N2876 except for the following items:
MAXIMUM RATINGS
Collector Current ......................................................................
Transistor Dissipation:
To up to 25·C ............................................................................
Lead-Soldering Temperatura (lO s max) ........................
Ie
1.5
A
PT
8.75
230
W
·C
lmax
V
7.5 min
W
TL
CHARACTERISTICS
Collector-to-Emitter Saturation Voltage
= 1.5 A.
(Ie
IB
= 0.3 A)
= =
VCE(sat)
....................................................
RF Power Output. Unneutralized
=
=
(Velll
28 V. Ie
0.375 A. PIllI
1 W.
f
50 Mc/s) ............................................................................
TYPICAL OPERATION CHARACTERISTICS
TYPE 2N2631
COMMON -EMITTER CIRCUIT. BASE INPUT.
COLLECTOR-TO-EMITTER VOLTS (VCEJ=40
CASE TEMPERATURE (TCJ=25°C
SAFE OPERATING REGION
TYPE 2N2631
POINT MUST BE IN REGION 'A' TO AVOID
0.6 N S
SECOND BREAKDOWN DuRING CLASS A
!3
III 0.5
IL
~0.4
~0.3
:::I 0.2
8
·OPERATION.
'"1""A
POE
5
~12
~~~~
5
glo
....
it
....
I~
06
a:
1""-
0.1
"::::-~~V1'J,a
. . . . r--.' r-.-"'4,.1's<;:---
8
j
J8-
OJ
..:E
~4
['\..
2
0102030406060
COLLECTOR-TO-EMITTER VOLTS
!l2C8-_
2N2708
30
40
50 60708090100
FREQUENCY - Mels
150
20e
92CS 12047Tl
TRANSISTOR
Si n-p-n double-diffused epitaxial planar type used in rf amplifiers, mixers,
and oscillator circuits for vhf and uhf applications (200 to 500 Mc/s).
Technical Data for RCA Transistors
215
JEDEC TO-72, Outline No.23. Terminals: 1 - emitter, 2 - base, 3 - collector,
4 - case.
MAXIMUM RATINGS
Collector-to-Base Voltagl! .................................................... ..
Collector-to-Emitter Voltage ................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Transistor Dissipation:
TA up to 25"C ........................................................................
To up to 25'C ........................................................................
TA or Te above 25°C .......................................................... ..
Temperature Range:
Operating (Junction) ............................................................
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ........................
35
V
20
V
V
3
dissipation
Veno
VeEo
VFlBO
Limited by power
0.2
W
0.3
W
See curve page 112
P'.
PT
PT
-65 to 200
-65 to 200
230
'C
'C
'C
V(BR)CBO
35 min
V
V(BRleEo(sus)
20 min
V
TJ(opr)
TSTG
TL
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(Ie
1 ,f,LA, b = 0) .......................................................... ..
Collector-to-Emitter Breakdown Voltage
(Ie
3 rnA, In
0, t p
300 ,f.LS, df
1%) .............. ..
Emitter-to-Base Breakdown Voltage (IE
10 /LA,
Ie = 0) ......................................................................................
Collector-Cutoff Current:
Ven
15 V, b = 0, TA
25'C ...................................... ..
VeB = 15 V, IE
0, TA = 150'C .................................... ..
Static Forward-Current Transfer Ratio (VeE = 2 V,
Ie = 2 rnA) ................................................................................
Small-Signal Forward-Current Transfer Ratio:
VeE = 15 V, Ie = 2 rnA, f = 1 kc/s .............................. ..
VeE
15 V, Ie
2 rnA, f
100 Mc/s ...................... ..
Input Capacitance (VEn
0.5 V, Ie
0,
f
0.14 Mc/s) ...................................................................... ..
Output Capacitance (Ven = 15 V, IE = 0,
f
0.14 Mc/s) ...................................................................... ..
Collector-to-Base Time Constant (Ven = 1.5 V,
Ie = 2 rnA, f
31.9 Mc/s) .......................................... ..
Small-Signal Common-Emitter Power Gain:
(In neutralized amplifier)
VeEl
15 V, Ie
2 rnA, f
200 Mc/s .................. ..
(In unneutralized amplifier)
VeE = 15 V, Ie
2 rnA, f = 200 Mc/s .................. ..
Small-Signal Transconductance (VeE
15 V,
Ie = 2 rnA, f = 200 Mc/s) ................................................
Noise Figure:
VeE
15 V, Ie
2 rnA, Rs
50 n,
f = 200 Mc/s ........................................................................
VeE = 6 V, Ie
1 rnA, Rs
400 n,
f = 60 Me/s ........................................................................
=
=
=
=
=
=
=
= =
=
=
=
=
=
=
=
=
=
=
=
=
=
=
TYPICAL SMALL-SIGNAL FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTIC
TYPE 2N2708
16
co~~g~~~~TCTu~~gl~~ui~u~.ASE
INPUT, _
FREQUENCY = 100 Me/.
COLLECTOR -TO- EMITTER' VOLTS
(VCE) = 4
FREE-AIR TEMPERATURE (TFA)=25'C
I
v---
I
i/
-
3 min
V
leBO
leBO
0.01 max
1 max
}LA
}LA
hFE
30 to 200
hfe
hfe
30 to 180
7 to 12
V(BR)EBO
=
=
=
=
Ctbo
1.4
pF
Cobo
1.5 max
pF
I'b'Cc
9 to 33
ps
Gpo
15 to 22
dB
Gpe
12
dB
gme
25 mmhos
NF
7.5 max
dB
NF
3.5
dB
TYPICAL SMALL-SIGNAL FORWARD
TRANSFER CONDUCTANCE AND
SUSCEPTANCE CHARACTERISTICS
TYPE 2N2708
COMMON-EMITTER CIRCUIT. BASE INPUT,
SHORT -CIRCUITED OUTPUT.
COLLECTOR-TO-EMITTER VOLTS (VCE)=15
COLLECTOR MILLIAMPERES (I~l=2
FREE -AIR TEMPERATURE (TFA = 25' C
""I'"1\
r-......
I\, r---..
'\..
\
2f--- f---
f'.,
\
2
4
6
8 100
,~
III
~}
6 "'000
FREQUENCY-Mel.
92CS-11938T
o
5
10
15
20
25
30
COLLECTOR MILLIAMPERES (IC)
92CS-11940T
216
RCA Transistor Manual
2N2857
UHF TRANSISTOR
Si n-p-n double-diffused epitaxial planar type used in low-noise amplifier,
oscillator, and converter applications at frequencies up to 500 Mc/s in a
common-emitter circuit, and up to 1200 Mc/s in a common-base circuit.
JEDEC TO-72, Outline No.23. Terminals: 1 - emitter, 2 - base, 3 - collector,
4 - connected to case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ............................................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Transistor Dissipation:
TA up to 25°C ....................................................................... .
Te up to 25°C ....................................................................... .
TA or Te above 25°C ........................................................... .
Temperature Range:
Operating (Junction) ......................................................... .
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ....................... .
30
15
2.5
20
VeRO
VeEo
VEBO
Ie
V
V
V
mA
mW
200
mW
300
See curve page 112
PT
PT
PT
-65 to 200
-65 to 200
230
°C
°C
°C
V(BB)eBO
30 min
V
V(BR)eEO
15 min
V
V(BR)ElBO
leBO
2.5 min
0.01 max
/LA
hFE
30 to 150
h ••
h,.
10 to 19
50 to 220
TJ(opr)
TSTG
TL
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = 0.001 mA,
lE
0) .................................................................................... ..
Collector-to-Emitter Breakdown Voltage (Ie = 3 mA,
lB = 0) ..................................................................................... .
Emitter-to-Base Breakdown Voltage (IE
0.01 mA,
Ie
0) ..................................................................................... .
Collector-Cutoff Current (VeR = 15 V, lE
0) ....... .
Static Forward-Current Transfer Ratio (VeE
1 V,
Ie = 3 mAl ........................................................................... .
Small-Signal Forward-Current Transfer Ratio:'
VeR = 6 V, Ie = 5 mA, f = 100 Mc/s ...................... ..
VeE = 6 V, Ic = 2 mA, f
1 kc/s ............................... .
Input Capacitance" (VEB = 0.5 V, Ie = 0,
f
0.140 Mc/s) ................................................................... .
Output Capacitance:
VeR
10 V, lE = 0, f
0.140 Mc/s ............................... .
VCB
10 V, lE
0, f = 0.140 Mc/s ............................... .
Collector-to-Base Time Constantt
VCB
6 V, Ie
2, f
31.9 Mc/s ................................... .
Small-Signal Power Gain, Neutralized Amplifier
VeE
6 V, Ie = 1.5 mA, f
450 Mc/s ....................... .
Power Output, Oscillator Circuit
VeR = 10 V, lE
-12 mA, f = 500 Mc/s ................... .
Noise Figure:t
VeE
6 V, Ie = 1.5 mA, RG = 50 n, f = 450 Mc/s ... .
VeEl = 6 V, Ie
1 mA, RG = 400 n, f = 60 Mc/s ....
=
=
==
=
=
=
=
=
=
=
=
=
=
=
=
=
=
• Fourth lead floating
COMMON-EMITTER CIRCUIT, BASE INPUT;
OUTPUT SHORT-CIRCUITED.
FREQUENCY (f) =.1 00 McIs
COLLECTOR -TO -EMITTER VOLTS (VeE): 6
FREE-AIR TEMPERATURE (TFA)=25'C
lL
II
pF
pF
pF
4 to 15
ps
12.5 to 19
dB
Po.
30 min
mW
NF
NF
4.5 max
2
dB
dB
Gp •
TYPICAL SMALL-SIGNAL FORWARD
TRANSFER CONDUCTANCE AND
SUSCEPTANCE CHARACTERISTICS
16 TYPE 2N2857
-............
1.4
1.3t max
1.8* max
t Fourth lead grounded
TYPICAL SMALL-SIGNAL FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTIC
I
elbo
Cobo
Cobo
rb'Cc
=
V
I".
!U)
75
~~
.~ ~
Z.J
eaJ..i
50
z •
0'"
"'- r\
\
"'1
~ 25
~z
ffi
"'z'"
....
~.~
o ~
1\
5101520253035
COLLECTOR MIt.LIAMPERES (IC)
I2CS-12153T
!tiii!
0
~a:
~o
-250
6~~~0~~:~I~TER
CIRCUIT,8ASE INPUT; OUTPUT SHORT-CIRCUITED.
COLLECTOR-TO-EMITTER VOLTS (VCE)=SCOLLECTOR MILLIAMPERES (Ic)ol.5
FREE-AIR TEMPERATURE (TFA)=25'C
"'-
/>c(
V
-
,
-bf.
r--
I\.~•
"-
i"-- ..........
--
t-
r--
100200 30D 400 500 600 700 80090D
FREQUENCY - Me'"
tZCS-121S2T
217
Technical Data for RCA Transistors
2N2869/
2N301
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in class A and class B af output-amplifier
stages of automobile radio receivers and mobile communications equipment.
JEDEC TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage ..................................................
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Emitter Current ........................................................................... .
Base Currp.nt ............................................................................... .
Transistor Dissipation:
TMF up to 55"C ....................................................................... .
TMF above 55'C ..................................................................... .
Temperature Range:
Operating (Junction) ........................................................... .
Storage ....................................................................................... .
Pin-Soldering Temperature (10 s max) ........................... .
-60
-50
-10
-10
10
-3
VeBo
VeEo
VEBO
Ie
Irn
Is
PT
PT
TJ(opr)
TSTG
Tp
V
V
V
A
A
A
30
W
See curve page 112
-65 to 100
-65 to 100
255
'c
'c
'c
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = 0.005 A,
IE
0) ......................................................................................
Collector-to-Emitter Breakdown Voltage (Ie = -0.6 A,
=
=
0) ......................................................................................
Emitter-to-Base Breakdown Voltage (IE = -2 mA,
IB
Ie = 0) ......................................................................................
Collector-to-Emitter Saturation Voltage (Ie = 10 A.
Is
=
-1 A) ..............................................................................
=
Base-to-Emitter Voltage (VeE
-2 V. Ie = -1 A) ....
Collector-Cutoff Current:
VeB
-30 V, IE = 0 ....................................................... .
S~ti~ For-:~~d~cu~e;rt ~r~n~f"i~· ..ii~ti~·······························
(VeE = -2 V. Ie = -1 A) ............................................... .
Gain-Bandwidth Product (VeE
--2 V, Ie
-1 A) ... .
=
=
=
V(BR)eBO
-60 min
V
V(BR)CEO
-50 min
V
V(BR)EBO
-10 min
V
VCE(sat)
VBE
-0.75 max
-0.5 max
V
V
leBo
leBO (sat)
-0.5 max
-0.1 max
mA
mA/
hFE
fT
50 to 165
200 min
kc/s
TYPICAL OPERATION IN CLASS A POWER-AMPLIFIER CIRCUIT
DC Collector-Supply Voltage ................................................
DC Collector-to-Emitter Voltage ........................................
DC Base-to-Emitter Voltage ................................................
Zero-Signal Collector Current ..............................................
Load Impedance ..........................................................................
Signal Frequency ........................................................................
Signal-Source Impedance ........................................................
Power Gain ................................................................................. .
Total Harmonic Distortion (at a power output of 5 W)
Zero-Signal Collector Dissipation ....................................... .
Maximum-Signal Power Output ........................................
Circuit Efficiency (at a power output of 5 W) ............
Vee
VOE
VRE
Ie
RL
f
Rs
POE
1/
TYPICAL TRANSFER CHARACTERISTIC
TYPE 2N2869/2N301
COMMON-EMITTER CIRCUIT, BASE INPUT.
MOUNTING-FLANGE TEMPERATURE =250 C
COLLECTOR-TO-EMITTER VOLTSo-I.5
'"'"
'"
5-1
0
V
~
V
:.l
:l-5
8
o
-
-
/
f-
0.2
-O.~
-0.6
-0.8
BASE·-TO,..EMfTTER VOLTS _ _1'4
-14.4
-12.2
-0.35
-0.9
V
V
V
A
15
(1
400
cis
10
38
5
11
5
45
(1
dB
i1
W
%
RCA Transistor Manual
218
TYPICAL OPERATION IN "SINGLE-ENDED PUSH-PULL" CLASS B
AF-AMPLIFIER CIRCUIT
DC Collector Supply Voltage ............................................... .
Zero-Signal DC Collector Current (per transistor) ... .
Zero-Signal Base-Bias Voltage ........................................... .
Peak Collector Current (per transistor) ........................
Maximum-Signal DC Collector Current (per transistor)
Signal Frequency ....................................................................... .
Input Impedance of Stage (per base) ............................... .
Load Impedance (per collector) ....................................... .
Power Gain ..................................................................................
Circuit Efficiency (at a power output of 12 W) ....... .
Maximum-Signal Power Output ....................................... .
Total Hannonic Distortion (at maximum-signal
power outpui of 12 W) ........................................................
Maximum Collector Dissipation (per transistor
at a power output of 12 W) ........................................... .
Vee
Ie
ie(peak)
Ie(max)
f
Rs
RL
i!>OE
-14.4
-0.05
-0.13
-2
-0.64
400
10
6
30
67
12
V
A
V
A
A
cis
n
n
dB
%
W
5
%
3
W
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N2869/2N301
COMMON-EMITTER CIRCUIT, BASE INPUT.
MOOiNG-FLANGE TEMPERATURE =25° C
III
II::
d
1
C-k
~
~
~
-I2}
~
lIE -I
~
lIE- 8
u -6
~
-4
_~5
~,
~~
::!Q
-~-2.Q
2
o
-
-5
10
-15
2N2870/
2N301A
-.!2.
-20
-5
8ASE MlL.L.IAMPER 5·-1
-25 -30
35
40 -45
50
COL.L.ECTOR-TO-EMITTER VOL.TS
92CM-9247T2
POWER TRANSISTOR
Ge p-n-p alloy-junction type used in class A and class B af output-amplifier
stages of automobile radio receivers and mobile communications equipment.
JEDEC TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case. This type is identical with type 2N2869/
2N301 except for the following items:
MAXIMUM RATINGS
-80
V
V(BR)eBO
-80 min
V
VeE (sat)
-0.5 max
V
VeBO
Collector.-to-Base Voltage
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(Ie = -0.005 A, IE = 0) ....................................................
Collector-to-Emitter Saturation Voltage
(Ie
-10 A, lB
-1 A) ................................................
=
2N2876
=
POWER TRANSISTOR
Si n-p-n triple-diffused planar type used in large-signal vhf applications
such as AM, FM, and cw service at frequencies up to 150 Mc/s in industrial
and military equipment. JEDEC TO-60, Outline No.20. Terminals: 1 emitter, 2 - base, 3 - collector.
219
Technical Data for RCA Transistors
MAXIMUM RATINGS
Collector-to-Base Voltage ..................................................... .
Collector-to-Emitter Voltage:
VBE = -1.5 V ....................................................................... .
Base open ................................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Transistor Dissipation:
Te up to 25·C ........................................................................
Te above 25·C ........................................................................
Temperature Range:
Operating (Junction) ...........................................................•
Storage ....................................................................................... .
Pin-Soldering Temperature (10 s max) ........................... .
VCBO
80
V
VCEV
VeEo
VEBO
Ie
80
60
4
2.5
V
V
V
A
17.5
W
See curve page 112
PT
PT
-65 to 200
-65 to 200
230
·C
·C
·C
V(BR)OBO
80 min
V
V(BR)OEO (sus)
V(BR)CEV
60 min
80 min
V
V
TJ(opr)
TSTG
Tp
CHARACTERISTICS
= 0.5 rnA,
0) ..................................................................................... .
Collector-to-Base Breakdown Voltage (Ie
=
lE
Collector-to-Emitter Breakdown Voltage:
Ic
0.5 A, Is
0, tp
5 ,itS, df
1 % ....................... .
VBE
-1.5 V, Ic
0.1 rnA ............................................
Emitter-to-Base Breakdown Voltage (IE = 0.1 rnA,
Ie = 0) •.....•..•........••...............•..•••••.•...••..••.....•.••.••.....................•
Collector-to-Emitter Saturation Voltage
(Ie = 2.5 A, Is = 0.5 A) ................................................... .
Collector-Cutoff Current (VCB
30 V, IE = 0) ........... .
Intrinsic Base-Spreading Resistance (VeE = 28 V,
Ie
0.25 A, f
400 Mc/s) ........................................... .
RF Power Output, Unneutralized:
VeE = 28 V, Ie := 0.5 A, PIE
2 W, f
50 Mc/s ....
VeE
28 V, Ie
0.275 A, P,E = 1 W, f
150 Mc/s
Gain-Bandwidth Product (VeE = 28 V, Ie
250 rnA)
Collector-to-Case Capacitance ............................................... .
Output Capacitance (VeB
30 V, IE = 0,
f = 0.14 Mc/s) ....................................................................... .
==
= ==
=
=
=
=
=
=
=
==
=
=
V(BR)EBO
4 min
V
VCE(sat)
lOBO
1 max
0.1 max
V
/LA
rbb'
6 typ
0
POE
POE
iT
Ce
10 min
3 min
200 typ
6 max
W
W
Mc/s
pF
Cobo
20 max·
pF
* This value applies only to type 2N2876.
TYPICAL OPERATION CHARACTERISTICS
~~~l~_2:JI~ER CIRCUIT BASE
SAFE OPERATING REGION
.!
TYPE 2N2876
BIAS POINT MUST BE IN REGION "Pi' TO AVOID
SECOND BREAKDOWN DURING CLASS A
OPERATION.
o
10
A
~
16
I
14
"'"
o
........
~
...
Q.
1"-
0:
20 30 40 !SO 60
COLLECTOR-TO-EMITTER VOLTS
92CS-12038T
'"~"'.o~.l
l' (.0
1"1::- j-...., I"-- i'-- f---
M~o
200
0
109
2.5
1/
10 20 30 40 50 60 70 80
COLLECTOR- TO-EMITTER VOLTS (VCE)
?I
--
~
/
I;~ I'
t---':I
--
I
r#) /
0.2
,/
o
1#
cc
BASE MILLIAMPERES(I
..J
p7~
"'r!l
I::::
---io
... t= So
.#
o
l/
0.5
1.0
1.5
2.0
2.5
3.0
BASE-TO-EMITTER VOLTS (VBE)
92CS-IU06T
92CS-12307TI
2N3118
TRANSISTOR
Si n-p-n triple-diffused planar type for large-signal vhf class C and smallsignal vhf class A amplifier applications in industrial and military communications equipment. JEDEC TO-5, Outline No.3. Terminals:"1 - emitter,
2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Emitter Voltage:
VBE
-1.5 V ....................................................................... .
Base open ................................................................................ ..
Emitter-to-Base Voltage ...................................................... ..
Collector Current .................................................................... ..
Transistor Dissipation:
TA up to 25"C ........................................................................
To up to 25"C ........................................................................
TA or To above 25"C ............................................................
Temperature Range:
Operating (Junction) ........................................................ ..
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
=
CHARACTERISTICS (At case temperature
=
VOEV
VOEO
VEBO
Ie
PT
PT
PT
=
== =
=
=
=
=
TL
1
W
-65 to 200
-65 to 200
255
'DC
°C
"C
25°Cl.,
V(BRlCEV
V(BR)OEO (sus)
=
V(BR)EBO
=
=
V
V
V
A
4
W
See curve page 112
TJ(opr)
TSTo
Collector-to-Emltter Breakdown Voltage:
--'
VBE
-1.5 V. Ie
0.1 rnA ............................................
10
10 rnA, lB
0, t p
300 J1.S, df
1.8% ................
Emitter-to-Base Breakdown Voltage (IE
0.1 rnA,
Ie = 0) ......................................................................................
Collector-Cutoff Current:
VCB
30 V, IE
0, TA
25"C ...................................... ..
VCB = 30 V, IE
0, TA = 150"C .................................... ..
Small-Signal Short-Circuit Input Impedance,
Real Part (VeE'
28 V, Ie
25 rnA, f
50 Me/s)
==
85
60
4
0.5
lOBO
lOBO
=
TYPICAL LARGE-SIGNAL CLASS C RF
POWER-OUTPUT CHARACTER(STICS
V
85 min
60 min
V
4 min
V
0.1 max
100 max
p.A
p.A
25 to 75
n
TYPICAL CLASS A RF POWER-OUTPUT
CHARACTERISTIC
TYPE 2N3118
6 COMMON-EMITTER CIRCUIT, BASE INPUT.
CLASS A SERVICE, 50 Mels
COLLECTOR-TO-EMITTER VOLTS (VCE)=28
5 COLLECTOR MILLIAMPERES (Icl= 25
CASE TEMPERATURE (Tcl = 25" C
;::04
~
!4
if
O.
"'0
~
ir
I-
~0.75
~
o
is
cc
...cc
o.3
~ O.2
0.5
"0.
15
~
"0.25
"cc
o
25
50
75
100
125 150
RF POWER INPUT (P,N)-MILL,WATTS
92CS-I2273T
'V
o
/
1/
I
...........
2
-3
I--
4
RF POWER INPUT (PINI- MILLI-=:J.~~2278T
RCA Transistor Manual
230
CHARACTERISTICS (cont'd)
Small-Signal Short-Circuit Output Impedance.
Real Part (VeE == 28 V. Ie
25 mAo f = 50 Mc/s)
Pulsed Static Forward-Current Transfer Ratio
(VeE = 28 V. Ie = 25 rnA. tp == 300 p.s. df ~ 1.8%)
Small-Signal ForwQrd-Current Transfer Ratio
(VeE == 28 V. Ie = 25 mAo f == 50 Mc/s) ....................
rbb' Cb'. Product (Vea == 28 V. Ie
25 mAo
f
50 Mc/s) ...........•............................................................
Power Gain. Class A Service (with heat sink)
(VeE
28 V, Ie = 25 mA, Poe == 0.2 W, f == 50 Mc/s)
Output Capacitance (Vea
28 V, Ie
0, f == 1 Mc/s)
Power Output. Class C Oscillator Service
(with heat sink):
VeE
28 V, Pie == 0.1 W, f == 50 Mc/s ....................
VelD
28 V, Pie = 0.1 W, f == 150 Mc/s ..................
=
=
=
=
_1_ (real)
hFE (pulsed)
=
=
n
50 to 275
hre
=
=
500 to 1000
Y..
5 min
rbb' Cb' e
Gp •
Cobo
Poe
Poe
60 max
ps
18 min
6 max
dB
1 min
0.4 min
W
pF
W
2N3119
TRANSISTOR
Si n-p-n triple-diffused planar type used in high-voltage, high-frequency
pulse-amplifier and high-voltage saturated-switching applications in industrial and military equipment. JEDEC TO-5, Outline No.3. Terminals: 1 emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage:
Vam
-1.5 V ........................................................................
Base open ................................................................................ ..
=
~~~~:oc~~:n~~.~~~~
. .: : : : : : : : : : : : : : : : : : : : : : : : : : : : :
Transistor Diss~tion:
TAo up to 25 C ........................................................................
i~ ::f.jg a1;'~;e ·25~C .. ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Temperature Range:
Operating (Junction) ........................................................ ..
storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
VeBO
100
V
Vemv
Vemo
Vmao
Ie
100
80
4
0.5
V
V
V
A
1
W
-65 to 200
-65 to 200
255
·C
·C
·C
V(aIDeBO
100 min
V
V
;;; 100
I:!
•
...
8
7
6
5
11.
::E
,
VV
~
..J
4
II:
3
!:E
e
:.l
... V
/
"-
2
............
..J
8
0.1
1.0
10
100
COLLECTOR MILLIAMPERES.!IC)
1000
'-
--
320
380
"'"
r-....
""'-I.........
340 .................
.,360
380
GAINfBANDWID~'U'ROOUCT -
T Mefs)-3
4
32
10
05101520253035404550
COLLECTOR· TO - EMITTER VOLTS !VcE!
'2CS-IU"T
92CS-12280T
2N3229
TRANSISTOR
Si n-p-n triple-diffused planar type used in large-signal, high-power AM,
FM, and cw applications at vhf frequencies in industrial and military, communications equipment. JEDEC TO-60, Outline No.20. Terminals: 1 emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ......................................................
Collector-io-Emitter Voltage:
VBE = -1.5 V ....................................................................... .
Base open ................................................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Transistor Dissipation:
~~ ~go;~ ~~:g
V
105
60
4
2.5
V
CHARACTERISTICS (At case temperature
=
=
SAFE OPERATING REGION
V
-65 to 200
-65 to 200
230
·C
·C
·C
V'BR)CBO
105 min
V
V'BR)CEV
V'BR)CEO(SUS)
105 min
60min
V
V
V'BR)EBO
4 min
V
VCE(sat)
ICBo
1 max
0.1 max
/LA
25°C)
=
=
V
A
17.5
W
See curve page 112
TJ(opr)
TSTG
Tp
Collector-to-Base Breakdown Voltage (Ic = 0.5 rnA.
IE = 0) ..................................................... ................................
Collector-to-Emitter Breakdown Voltage:
VBE
-1.5 V. Ic = 0.1 rnA .............................................
Ic
500 rnA. Is
O. t p = 5 p.s, df
1% ....................
Emitter-to-Base Breakdown Voltage (IE = 0.1 rnA.
Ic = 0) ...................................................... ...............................
Collector-to-Emitter Saturation Voltage (Ic = 2.5 A,
Is = 500 rnA) ........................................................................
Collector-Cutoff Current (VCB = 30 V. IE = 0) ............
Intrinsic Base-Spreading Resistance (VCE = 28 V.
Ic
250 rnA. f
400 Mc/s) ................................................
=
105
VCEV
VCEO
VEBO
Ic
:::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::: 1.;
Temperature Range:
Operating (Junction) ........................ ...................................
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ............................
==
VCBO
V
l'bb'
6
TYPICAL OPERATION CHARACTERISTICS
n
TYPE 2N3229
~~Eii:E~T~:m~~=~~ 1VeE)= 50
~
~
c---/fl>
"b~r-; ~
~/f/~
. .1Z.(~J,
.
........... "
...;;..
030
VOLTS (VCE'
NCS-I_aT
410
"Q5_
I T"
I I
50 60 70 SO 90 100
FREQUENCY-Mell
150 200
MCS-I2417T
232
RCA Transistor Manual
CHARACTERISTICS (cont'd)
=
Gain-Bandwidth Product (VeE: 28 V. Ie
250 mAl
Output Capacitance (VeB : 30 V. IE : O.
f. : 140 kc/s) ........................................................................
Collector-to-Case Capacitance ..............................................
RF Power Output. Unneutralized:
Vee: 50 V. Ie
500 mAo PIE : 2 W. f == 50 Mc/s
Vee
50 V. Ie == 250 rnA. P,E == 1 W. f
150 Me/s
=
=
=
2N3230
fT
200 typ
Mc/s
Cobo
Ce
20 max
6 max
pF
pF
POE
POE
15 min
5 min
W
W
MULTIUNIT SEMICONDUCTOR DEVICE
Two Si n-p-n epitaxial planar transistors and a commutating diode used in
high-speed switching and high-gain linear amplifier applications for aerospace, military, and industrial service. The transistors are internally connected to form an amplifier (Darlington) circuit, and the diode is connected
across the output transistor. Outline No.25. Terminals: 1 - base 2, 2 - emitter,
S - collector, 4 - base 1.
MAXIMUM RATINGS
Colleetor-to-Base 1 Voltage (base 2 and emitter open)
Collector-to-Emitter Voltage:
~:~: :n;i:.:·~Rio ~ .~~. .~ . : : : : : : : : : : : : : : : : : : : : : :
Base 1 and base 2 open .................................................. ..
Emitter-to-Base 1 Voltage (collector and base 2 open)
Collector Current ...................................................................... ..
Base 1 Current .......................................................................... ..
Diode Current ........................................................................... .
Transistor Dissipation:
i-~ ~~o;~ i~:~
.:::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::.
Temperature Range:
Operating (Te) and (TsTG) .............................................. ..
Lead-Soldering Temperature (10 s max) ...................... ..
CHARACTERISTICS (At case temperature
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
80
V
VCEV
VCER(SUS)
VCEO(SUS)
VEB,O
10
80
60
60
10
V
V
7
100
5
1B,
IF
PT
PT
V
V
A
rnA
A
25
W
See curve page 112
-55 to 2 0 0 ° C
·C
235
25°C)
Collector-to-Emitter Breakdown Voltage:
VD,E
-1.5 V. RB.E
50 n ........................................
RB,E ~ 50 n, Ie == 50 rnA, IB,
0 .............................. ..
RB,E ~ 50 n. RD.E ~ 50 n. Ie == 50 rnA ..................... ..
Ie : 50 rnA. 1B, and lB.
0 ...................................... ..
Colleetor-to-Emitter Saturation Voltage (IB, : 3 rnA.
Ie = 2 A. lB.
0) ............................................................
Base I-to-Emitter Saturation Voltage (IB, = 3 rnA.
Ie == 2 A. lB. = 0) .......................................................... ..
Base 1-to-Emitter Voltage (VeE
4 V. Ie
2 A.
lB.
0) .................................................................................... ..
Collector-Cutoff Current:
VeE: 50 V. Is, and Is. : O. Te
25°C .................. ..
VeE: 50 V. Ist and Is. = 0, Te
12SoC ..................... .
RBo" ~ .so n. VOl'
80 V, VB,E
-1.5 V ............ ..
Emitter-Cutoff Current (VEB, : 10 V.
Is. and Ie = 0) ................................................................... .
Static Forward-Current Transfer Ratio:
VeE = 4 V. Ie = 5 A. lB. : 0 ...................................... ..
VeE: 4 V. Ie
2 A. Is. : 0 ....................................... .
VeE = 4 V. Ie = 50 rnA. lB. = 0 .................................. ..
Gain-Bandwidth Product (VeE
10 V, Ie : 1 A.
Is.
O. f
20 Mc/s) ....................................................... .
Collector-to-Base 1 Capacitance (VeB, == 10 V.
lB. and Ie :=:: O. f : 1 Mc/s) .......................................... ..
Collector-to-Base 2 Capacitance (VeB. == 10 V.
1B, and Ie = O. f = 1 Mc/s) ........................................... .
Turn-On Time. Saturated Switch (VCE = 28 V,
lB,(on) = 4 rnA. IB.(off) == -8 rnA. Ie = 2 A) ....
Storage Time (VCE
28 V, lB,(on) = 4 rnA.
1B.(off) = -8 rnA. Ie
2 A) ........................................
Fall Time (Vom. =.28 V, 1B,(on)
4 rnA.
lD.(oil)
-8 rnA, Ie
2 A} ........................................... .
=
VCB,O
VF
V(BR)CEV
V(BR)CER, (sus)
V(BR)CER.(SUS)
V(BR) CEO (sus)
VCE(sat)
VB," (sat)
2 max
80 min
60 min
80 min
60 min
V
V
1.4 max
V
2 max
V
V
V
V
VBiE
1.8 max
V
IeEo
ICEV
100 max
l.Smax
2 max
p,A
mA
mA
IEB,O
So max
p,A
ICED
hFE
hF"
hFE
1000 min
2000 to 20000
1000 min
40 min
Mc/s
CObio
60 max
pF
COb 2 O
200 max
pF
td+ t,
3S0max
ns
t.
1600 max
os
t,
550 max
ns
fT
Technical Data for RCA Transistors
233
CHARACTERISTICS (cont'd)
Commutating-Diode Forward Voltage (Iv = 2 A,
inverted direction) ..............................................................
Thermal Resistance, Junction-to-Case ............................
VF
2 max
7 max
8J-<:
V
'C/W
TYPICAL TRANSFER CHARACTERISTICS
u6
~~IOOOO
/:l5
~;; 80001--t---t-+++--!
~~
i~
~~
g~
>/~;:
iF~
>:yr§lj
!:!
0::1:
00:
0:0:
TYPE 2N3230
CASE TEMPERATURE (Te) = 25' C
0:
bJ
6000f-+--+-+-I
.
4000
u
~4
1/
II
bJ2
2000f--t---t-+++-t--+-Hf-t---t-+-t+l
~O-2
1/11
~3
2
•
68 10- 1 2
•
..J
..J
o I
U
jI
o
68 1
COLLECTOR AMPERES (IC)
I
2
3
BASEI-TO-EMITTER VOLTS (VBIE)
92CS-12371T
92CS-12366T
MULTIUNIT SEMICONDUCTOR DEVICE
2N3231
Two Si n-p-n epitaxial planar transistors and a commutating diode used in
high-speed switching and high-gain linear amplifier applications for aerospace, military, and industrial service. The transistors are internally connected to form an amplifier (Darlington) circuit, and the diode is connected
across the output transistor. Outline No.25. Terminals: 1 - base 2, 2 - emitter,
3 - collector, 4 - base 1. This type is identical with type 2N3230 except for
the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage (base 2 and emitter open)
Collector-to-Emitter Voltage:
VB,E
-1.5 V, RU.E
50 n ............................................
RB,E and RD.E ~ 50 n ....................................................... .
Base 1 and base 2 open ..................................... ,............. .
=
=
CHARACTERISTICS (At case temperature
=
=
=
=
=
100
V
VeEv
VeER (SUS)
VeEO(Sus)
100
80
80
V
V
VCBR)eEV
100 min
VCBR)eER, (sus) 80 min
V(BRleER .. (suS) 100min
V(BRICEO (sus)
80 min
V
V
V
V
V
25°C)
Collector-to-Emitter Breakdown (Sustaining):
VB1E
-1.5 V, RR ••,
50 n ............................................
RB1E ~ 50 n, Ia = 50 rnA, In. = 0 ............................... .
Ru," ~ 50 n, RD.E ~ 50 n, Ie = 50 rnA ....................... .
Ie = 50 rnA, In, and In. = 0 ........................................... .
Collector-Cutoff Current (RB.,lo ~ 50 n, VeE = 100 V,
VU,lO = -1.5 V) .................: ..................................................
Storage Time (Vam
28 V, In, (on)
4 rnA,
In., (011)
-8 rnA, Ie
2 A) ...................................... ..
Fall-Time (VeE = 28 V, Iu,(on) = 4 rnA,
In.(off) = -8 rnA, Ie = 2 A) ...................................... ..
=
VeB,o
=
IeEV
2 max
rnA
t.
1250 max
ns
tr
400 max
ns
2N3241
TRANSISTOR
Si n-p-n planar type for high-gain, low-noise amplifier applications in commercial and industrial equipment. Outline No.26 (3-lead). Terminals: 1 emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage (VilE = -1.5 V) .................. ..
Collector-to-Emitter Voltage ................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Emitter Current ........................................................................ ..
VeBV
VeEo
VEBO
Ie
IE
30
25
5
100
-100
V
V
V
rnA
rnA
234
RCA Transistor Manual
MAXIMUM RATINGS (cont'd)
Transistor Dissipation:
:t:~ ~~ :~ ~~:g
::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
TA or To above 25·C ............................................................
Temperature Range:
Operating (Junction) ........................................................•....
Storage ..................................................,.....................................
Lead-Soldering Temperature (10 s max) ......................•.
PT
PT
PT
0.5
W
2
W
See curve page 112
TJ(opr)
TSTG
TL
-65 to 175
-65 to 175
255
·C
·C
·C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (VBm ::::; -1 V,
Ie ::::; 50 p.A.) ................................... __ ••••••.•••••••••••••••••••••••••.••••
Collector-to-Emitter Breakdown Voltage (Ie::::; 10 rnA,
IB ::::; 0) ......................................................................: •••••••••••••••
Emitter-to-Base Breakdown Voltage (1m ::::; 50 /LA,
10 ::::; 0) ......................................................................................
Collector-to-Emitter Saturation Voltage (10 == 50 rnA,
IB ::::; 2.5 mAl ............................................................................
Base-to-Emitter Saturation Voltage (Ie ::::; 50 mA,
ID ::::; 2.5 rnA) ........................................................................
Collector-Cutoff Current:
VOB ::::; 25 V, 1m ::::; 0, TA ::::; 25·C ........................................
VCB ::::; 25 V, 1m ::::; 0, TA ::::; 85·C ........................................
Emitter-Cutoff Current (VmB ::::; 2.5 V, Ie ::::; 0) ............
Static Forward-Current Transfer Ratio (Vem ::::; 12 V,
10::::; 10 mAl ............................................................................
Small-Signal Forward-Current Transfer 'Ratio
(Vom ::::; 12 V, Ic ::::; 10 rnA, f ::::; 1 kc/s) ........................
Gain-Bandwidth Product (Vem::::; 6 V, Ie ::::; 1 mAl ....
Intrinsic Base-Spreading Resistance (Vem ::::; 60 V,
10 ::::; 1 rnA, f ::::; 100 Mc/s) ....................................................
O~tp~t E~~i~~~~~...~.~~~ . ~. ~..~:. ..~~..~...~: ..........................
Noise Figure (Vom ::::; 6 V, RG ::::; 1000 n,
10 ::::; 0.5 rnA, f ::::; 1 kc/s, circuit bandwidth ::::; 1 cis)
Small-Signal Input Impedance (Vom ::::; 12 V,
Ie::::; 10 mA, f::::; 1 kc/s) _................................................. .
Small-Signal Output Admittance (Vom ::::; 12 V,
Ie ::::; 10 mA, f ::::; 1 kc/s) ................................... ~ ............... .
Small-Signal Reverse-Voltage Transfer Ratio
(Vcm ::::; 12 V, Ic ::::; 10 mA, f ::::; 1 kc/s) ........................
Thermal Resistance, Junction-to-Case ..............................
Thermal Resistance, Junction-to-Ambient ........................
III'"
125
~
100
a.
3
'j 75
I:
o
.1 1
~
108
400
2
4
300
~
2
r
~
200
lr- e-- BASE MICROAMPERES (IB I' 100 r--
I
0
I
5
10
15
20
COLLECTOR-TO-EMITTER VOLTS (VcEI
92CS-I2397T
2N3242
V-
0
....
o
I
4
6 8 10
4
6 8 100
~ :
::l
II:
!..U.c'tOR;!.O~E~JI
00-
0.3
W
1
W
See curve page 112
PT
V(BR)CBO
40 min
V
V-z ....
40
15
6
500
VeRO
VCEO
VEBO
Ic
4 5
COLLECTOR MILUAMPERES (Ie)
92CS-12538T
0.1
0.2
0.3
0.4
0.5
BASE-TO-EMITTER VOLTS (VaE'
02cS-,esOTl
RCA Transistor Manual
236
CHARACTERISTICS (cont'd)
Static F'orward-Current Transfer Ratio:
VCIIl == 1 V, Ie == 10 rnA, TA == 25°C ........................... .
VCIIl == 1 V, Ie == 10 rnA, TA == 55°C ........................... .
Pulsed Static Forward-Current Transfer Ratio:
Velll == 1 V, Ie == 100 rnA, t p
300 JLs, df :::; 2% ... .
VCE = 1 V, Ie == 200 rnA, t. == 300 JLS, df ~ 2% ... .
Small-Signal Forward-Current Transfer Ratio:
VeE == 1 V, Ie = 100 rnA, f == 100 Mc/s ....................
VeE = 10 V, Ic == 10 rnA, f == 100 Mc/s ................... .
Input Capacitance (VEB == 0.5 V, Ie = 0, f == 1 Mc/s)
Output Capacitance (VeB == 5 V, I!Il = 0, f == 1 Mc/s)
Delay Time (Vce == 6 V, VBE(off) == -4 V,
IB, = 10 rnA, los == 100 rnA, lB. = -10 rnA) ........... .
Rise Time (Vee = 6 V, VBE(off) == -4 V, 1B1 = 10 rnA,
Ies
100 rnA, 1B2
-10 rnA) ......................................... .
Fall Time (Vce == 6 V, IB, == 10 rnA,
Ies = 100 rnA, lB. == -10 rnA) ........................................
Storage Time (Vee
6 V, IB, == 10 rnA,
Ies = 100 mA, lB. = -10 mA) ..................................... ...
=
hFE(pulsed)
hFIIl (pulsed)
3 min
6 min
4 max
3.5 max
pF
pF
td
6 max
ns
tr
7 max
ns
tr
6 max
ns
t.
lOmax
ns
elbo
Cobo
=
TYPICAL RISE-TIME CHARACTERISTICS
TYPICAL STORAGE-TIME CHARACTERISTICS
TYPE 2N3261
COMMON-EMITTER CIRCUIT, BASE INPUT.
U>
TYPE 2N3261
2 COMMON-EMITTER CIRCUIT, BASE INPUT. FREE-AIR TEMPERATURE (TFA)=2S'C
COLLECTOR-SUPPLY VOLTS (VCC)~3
: 'ON" COLLECTOR MILLIAMPERES (Ic) - 200
~,OO FREE -AIR TEMPERATURE (TFA)'25°C
o • COLLECTOR SUPPLY VOLTS (VC~)' 3
!il
:g
6
"OFF" BASE-TO-EMITTERVOLTS VsE(offl)=-4
4
z
2 r---20 -'
~
I
~I.I
~ I~
'"
:::E
.l'Q:
'"
ii:
~
2
I
0.01
. . . . r--.
r::-r--. ...........
4
~".I~
6
;::
U>
I
~~~·I
~ ~<~""CIs>
~"'"
5~
2
f---
-
~ 10
- 200
1
30 min
20 min
hfe
hfe
=
=
40 to 150
20 min
hFIIl
hFE
•
~
1
I
,",001
• .0.1
2
• • I
RATIO OF "TURN-ON" BASE CURRENT
TO'ON" COLLECTOR CURRENT (IB1/IC)
-..ss-
1"/00,>
G
/"ObN'%IiIV~~ .......... 0.<'(.8/;1~CI"O~'sii;;;.~
4
'I f""o.O~U"~NI"
2
I
0.01
2
468QI
2468
RATIO OF "TURN-OFF" BASE CURRENT
TO "ON" COLLECTOR CURRENT (IB2/IC)
92CS-12!553TI
92CS-12559T
2N3262
TRANSISTOR
Si n-p-n triple-diffused planar type used in high-voltage, high-frequency
pulse-amplifier and high-voltage saturated-switching applications in industrial and military equipment. JEDEC TO-39, Outline No.12. Terminals: 1 emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Voltage:
VBE = -1.5 V ....................................................................... .
Base open (sustaining voltage) ...................................... ..
Emitter-to-Base Voltage ......................................................... .
Collector Current ...................................................................... ..
Transistor Dissipation:
TA up to 25°C ...................................................................... ..
Te up to 25°C ...................................................................... ..
TA or Te above 25°C ........................................................... .
Temperature Range:
Operating (TA-Te) and Storage (TSTO) ...................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
CHARACTERISTICS (At case temperature
=
=
100
V
VeEv
VeEo(sus)
VEBO
Ie
100
80
V
V
V
A
PT
PT
p,.
4
1.5
W
1
8.75
W
See curve page 112
-65 to 200
230
°C
°C
V(BR)CEV
100 min
V
V(BR)EBO
4 min
V
90 min
80 min
V
V
TL
25°C)
Collector-to-Emitter Breakdown Voltage
(VBE == -1.5 V, Ie = 0.25 mAl ...................................... ..
Eniitter-to-Base Breakdown Voltage (1!Il
0.1 mA,
Ie = 0) .................................................................................... ..
Collector-to-Emitter Sustaining Voltage:
Ie == 500 rnA, RBE == 10 n, t. == 15 p,S, df == 1.5% .. ..
Ie == 500 mA, IB = 0, t. == 15 .JLS, df
1.5% ................
=
VeBO
VeER (sus)
VeEo(sus)
237
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Collector-to-Emitter Saturation Voltage (Ie = 1 A,
IB = 100 rnA) ........................................................................
Base-to-Emitter Saturation Voltage (Ie = 1 A,
In = 100 rnA) ........................................................................
Collector-Cutoff Current (VeB = 30 V, IE
0,
T .. = 25'C) .................................................... :.........................
Emitter-Cutoff Current (VEH = 3 V, Ie = 0) ................
Static Forward-Current Transfer Ratio
(V"E
4 V, Ie
500 rnA) ................................................
Small-Signal Forward-Current Transfer Ratio
(VCl'
28 V, Ie
100 rnA, f
50 Mc/s) ................
Input Capacitance (VEB
3 V, 10
0, f
1 Mc/s)
Output Capacitance (VaH
28 V, Ie
0, f
1 Mc/s)
Pulse-Amplifier Rise Time (Vee = 80 V,
Ie == 25 rnA) ............................................................................
Turn-On Time, Saturated Switch (Vee = 28 V,
Ie = 1 A, Is 1 = 100 rnA) ....................................................
Turn-Off Time, Saturated Switch (Vee = 28 V,
Ie = 1 A, Is, = -100 rnA) ................................................
=
=
=
=
=
==
=
=
=
II
V
/
BASE MILLIAMPERES (IBI= 0
o
tr
+ t,
t, + tf
td
BOO
3 min
300 max
20 max
pF
pF
20 max
ns
40 max
ns
750 max
ns
N
'"
Ie
~
:!
..J
..J
~
I
1'/J
100
o
I
I:/t
8
J
~_
.,~
:1200
20
40
60
eo 100 120
COLLECTOR-TO-EMITTER VOLTS (VCEI
...
III:
M
,
40 min
1,0 J5lli:8
~300
I
V
TYPE 2N3262.
I
COMMON-EMITTER CIRCUIT; BASE INPUT.i
FREE-AIR TEMPERATURE (TFAI~25'C
0:
I
0.02
2
hf'
Ctbo
Cobo
~400
1
/
I
0.0
/LA
/LA
D.
/
~
0.1 max
100 max
'"~600
'":1/500
I
J-
V
ICHo
lEno
g700
I
~
1.4 max
TYPICAL TRANSFER CHARACTERISTICS
14 TYPE 2N3262
COMMON-EMITTER CIRCUIT, BASE INPUT._
FREE-AIR TEMPERATURE (TFAI=25'C
~~
0.6 max
VBE (sat)
h"E
=
=
TYPICAL COLLECTOR CHARACTERISTICS
VeE (sat)
0.2
0.4
0.6
0.8
8ASE-TO-EMITTER VOLTS (VSEI
92CS-12449T
92CS-12454T
2N3263
POWER TRANSISTOR
Si n-p-n epitaxial type used in high-power, high-speed, and high-current
applications such as switching circuits, amplifiers, and power oscillators in
aerospace, military, and industrial applications. Outline N 0.24. Terminals:
B - base, E - emitter, C - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VnE = -1.5 V ....................................................................... .
RBE ~ 50 n ............................................................................
Base open (sustaining voltage) ....................................... .
Emitter-to-Base Voltage ....................................................... .
Collector Current ....................................................................... .
Base Current ............................................................................... .
Transistor Dissipation ............................................................. .
Temperature Range:
Operating (Junction) ........................................................... .
Storage ........................................................................................
CHARACTERISTICS (At case temperature
=
=
=
=
=
=
=
=
=
=
=
=
=
VeE v
VeER (SUS)
VeEO(sus)
VEno
Ie
In
PT
TJ(opr)
TSTG
150
V
V
150
110
V
V
90
7
V
25
A
10
A
See Rating Chart
-65 to 2 0 0 ° C
-65 to 200
°c
25°C)
Collector-to-Emitter Sustaining Voltage:
Ie = 0.2 A, Is = 0 ............................................................... .
Ie = 0.2 A, RnE ~ 50 n ......................................................
Collector-to-Emitter Saturation Voltage
(Ie
15 A, Is
1.2 A, t p
350 /LS, df ~ 2%) ....... .
Base-to-Emitter Saturation Voltage
(Ie
15 A, In
1.5 A, t p
350 /LS, df ~ 2%) ....... .
Emitter-to-Base Voltage (IE = 0.02 A, Ie = 0) ........... .
Collector-Cutoff Current:
VeE
150 V, VBE = -1.5 V, Te
25°C ................... .
Ven
80 V, IE
0, Te
25°C ......................................
Ven
80 V, IE
0, Te
125°C ................................... .
=
=
Veno
VeEO(Sus)
VeER (SUS)
90 min
110 min
V
V
VeE (sat)
0.75 max
V
VBE(sat)
VEBO
1.6 max
7 min
V
V
IeEv
Ieno
leBO
20 max
4 max
4 max
rnA
rnA
rnA
238
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Emitter-Cutoff Current:
VEB = 5 V, Ic = 0, Tc
25·C .......................................... ..
VEB
5 V, Ic
0, Tc
125·C ...............:........................ ..
Pulsed Static Forward-Current Transfer Ratio:
VCE
3 V, Ic
15 A, t p
350 p.s, df
2% .......... ..
VCE
4 V, Ic
20 A, t p
350 p.s, df
2% .......... ..
Collector-to-Base Feedback CapacItance
(VCB = 10 V, lE
0, f = 1 Mc/s) .............................. ..
Turn-On Time, Saturated Switch (Vee = 30 V,
Ie = 15 A, lB,
1.2 A, lB.
-1.2 A) ...................... ..
Fall Time, Saturated Switch (Vee = 30 V,
Ie
15 A, IB,
1.2 A, lB.
-1.2 A) ...................... ..
Storage Time, Saturated Switch (Vec = 30 V,
Ie
15 A, lB,
1.2 A, lB.
-1.2 A) ........................
Gain-Bandwidth Product (VeE := 10 V,
Ie = 3 A, f = 5 Mc/s) ...................................................... ..
Second-Breakdown Current, Safe Operating
Region (VeE = 75 V) ........................................................
Second-Breakdown Energy, Safe Operating
Region (VBE = -6 V, Ie
10 A, RBE
20 n,
L = 40 p.H) .......................................................................... ..
Thermal Resistance, Junction-to-Case .......................... ..
=
=
=
=
=
=
=
=
=
=
lEBO
lEBO
=
=
hFE (pulsed)
hFE(pulsed)
=
=
=
=
=
=
td
=
=
=
4
/LS
t,
0.5 max
/LS
t.
1.5 max
/LS
fT
20rnin
Mc/s
IS/b
350rnin
rnA
ES/b
8J-e
2rnin
1.5 max
rnJ
·C/W
-
8
~I
4
2
8
4
40
V
0.01
0.4
0.6
0.8
1.0
1.2
1.4
BASE-TO-EMITTER VOLTS (VBE)
V
,,-
-
"
:\
-55
f..-
o
1.6
~
V
V
2
0.2
pF
0.5 max
CASE TEMPERATURE (Tcl-125· C
'Y ~/I
2
+ tr
COLLECTDR-TO-EMITTER VOLTS (VCEI-3
...-
...-:;:;;
25 to 75
20 min
TYPICAL DC FORWARD-CURRENT
TRANSFER- RATIO CHARACTERISTICS
TYPE 2N3263
TYPICAL TRANSFER CHARACTERISTICS
TYPE 2N3263
• CDLLECTDR-TO-EMITTER VOLTS IVCE)~_
2 CASE TEMPERATURE
8 (TC)"125'C
mA
mA
900 max
Cb' c
=
=
5 max
5 max
2
0.01
4 68
0.1
2
4 68
2
4 68
10
2
4
COLLECTOR AMPERES IIcl
92CS-12437T
92C5-12443TI
SAFE OPERATING REGION
RATING CHART
15
125
TYPE 2N 263
FOR MAXIMUM CASE TEMPERATURES ABOVE
75' C, DERATE LII!EARLY AT 0.66 WI' C
!!i l!! IDDf--+-+--+--j--I--+--l---l--I
~~
'''1' 75
~~
~~
50
x
-
pF
1 min
1 min
600
:::>
--~ I",pi!;:-;:
(p
I-
~
+-
r- t-::-
12 max
TYPICAL SMALL-SIGNAL OPERATION
CHARACTERISTIC
~
g~~~~J~~~~~T~:~~~~~:~~~T~ (VeE) : 28
4rnin
hfe
Cabo
-
g
II:
0.
.............
~400
~
:iCD
,
~
...
500
r--....
.....
300
Z
~ 200
0:
I
100
200
FREQUENCY ~Mc/s
300
o
400
so
100
ISO
200
250
COLLECTOR MILLIAMPERES (Icl
300
92(5-125691
92CS-12571T
2N3435
TRANSISTOR
Si n-p-n triple-diffused planar type used in vhf large-signal class A amplifier applications. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Voltage ................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ...................................................................... ..
Transistor Dissipation:
TA up to 25°C ........................................................................
Te up to 25°C ........................................................................
TA or Te above 25°C ........................................................... .
Storage-Temperature Range ................................................ ..
Lead-Soldering Temperature (10 s max) ....................... .
CHARACTERISTICS (At case temperature
=
VeBO
VeEo
80
60
4
0.25
VEBO
Ie
PT
PT
PT
TSTG
TL
1
W
4
W
See curve page 112
-65 to 2 0 0 ° C
·C
255
25°C)
Collector-to-Base Breakdown Voltage (Ic = 0.1 mA.
lE =
0)
.................................................................................... ..
Collector-to-Emitter Breakdown Voltage
(Ie = 10 mA. lB = 0) ....................................................... .
Emitter-to-Base Breakdown Voltage (IE = 0.1 mA.
Ie = 0) ......................................................................................
Collector-Cutoff Current:
VeB = 40 V. lE = O. T = 25°C ......................................
VeB
40 V. IE = O. T
150°C .................................. ..
Static Forward-Current Transfer Ratio
(VCE = 20 V. Ie = 10 mA) ........................................... .
Large-Signal Average Power Gain (VeE = 40 V.
Ic = 60 mA. RG
50 O. PIE = 100 mW. f = 70 Mc/s)
Small-Signal -Forwar.ci-Current Transfer ·Ratlo .
(VCE
40 V. Ie = 10 mAo f
70 Me/s) ................... .
=
=
=
=
=
V
V
V
A
VmR)CBO
80 min
V
V(BR)eEO (sus)
60 min
V
4 min
V
leBO
leBO
0.05 max
SO max
/LA
/LA
hFE
50 to 200
GPE
10 min
hre
2 min
VIBR)EBO
dB
242
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Product of Base-Spreadine, Resistance and
Collector-to-Case CapacItance (VeE = 40 V,
Ie
10 rnA, f
70 Mc/s) ................................................
Output Capacitance (VCB = 40 V, IE = 0,
f = 1 Me/s) .................•..........................................................
=
=
2N3439
rbb'Cc
Cobo
80 max
ps
Srnax
pF
TRANSISTOR
Si n-p-n triple-diffused type used in high-speed-switching and linear-amplifier applications, such as high-voltage differential and operational amplifiers,
high-voltage inverters, and series regulators for industrial and military
applications. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base,
3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Ernitter Voltage:
VBE
= -1.S
V
....................................................................... .
Base open (sustaining voltage) ....................................... .
Emitter-to-Base Voltage ....................................................... '"
Collector Current ....................................................................... .
Base Current ............................................................................... .
Transistor Dissipation:
TA up to SO·C ........................................................................
Tc up to SO·C ........................................................................
TA or Te above SO·C ............................................................
V cno
4S0
V
VCEV
4S0
3S0
V
VCEO(SUS)
VlilBO
V
7
V
O.S
A
1
Ie
IB
A
1
W
S
W
See eurve page 112
PoPT
PT
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N3439
CASE TEMPERATURE (Tc) • 25°C
I
f--80
0.6
~
BASE MILLIAMPERES (1B).:..0.3
0.5
I ~f.--n
f
20
~~
r..--
~
r..
{-
o
20
0.2
0.1
40
80
100
120
140
160 IBO 200
COLL£CTOR-TO-EMITTER VOLTS (VCE)
60
TYPICAL TRANSFER CHARACTERISTICS
"0
t!
10' COLLECTOR-T?-EMIT!ER~S (VCE);}O
~
'\.~~~o;;;c,c=+==:;;?",==l
~ ,~
a.
~:3
~,,~-<.rA':'----+---l
~ 1,~pJ'~~~=$'~
-~~:J.t~j~~
4f--"-'
a:
~
-
~
2r--_~
0.1
~
t'"
Q
TYPE 2N3439
r----J
21---+--+--
I
I
.- -
~
~ 140
'"
~
--I----+--l
0.Ob·.'::2:---::'0.'=3--,0='.4-:----::0:':.5=---::OL.6-.....J
0 .L,7-..,J0.8
BASE-TO- EMITTER VOLTS (VBE)
'2C$-IHI9T
92CM-12617T
125· C
/
::; 120
!z
'"a:a:
::::0
U
100
80
60
I~
g
240
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
TYPE 2N3439
COLLECTOR-TO-EMITTER VOLTS fVCE) 010
~ 40
f----
220
0.01
CASE
j'TEMPERATURE
fTC)o25°C
2 468
2
468
2
4681
2
468
0.1
I
10
100
COLLECTOR MILLIAMPERES (IC)
2 468
1000
~2CS-J2615T
T
243
Technical Data for RCA Transistors
MAXIMUM RATINGS (cont'd)
Temperature Range:
Operating (Junction) .......................................................... ..
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
CHARACTERISTICS (At case temperature
DC
DC
D
=
=
'C
-65 to 200
-65 to 200
255
= 25 C)
Collector-to-Emitter Sustaining Voltage
(Ie = 50 mA, In = 0) ...................................................... ..
Collector-to-Emitter Saturation Voltage
(Ie = 50 rnA, Iu = 4 rnA) .............................................. ..
Base-to-Emitter Saturation Voltage
(Ie = 50 rnA, In = 4 rnA) .............................................. ..
Collector-Cutoff Current:
VeE
300 V, In
0 .......................................................... ..
VeE = 450 V, VBE = -1.5 V ............................................ ..
Emitter-Cutoff Current (VEn
6 V, Ie
0) .............. ..
Static Forward-Current Transfer Ratio:
VeE = 10 V, Ie = 20 rnA .................................................. ..
VeE
10 V, Ie = 2 rnA .................................................... ..
Small-Signal Forward-Current Transfer Ratio
(VeE = 10 V, Ie = 10 rnA, f = 5 Mc/s) .................... ..
Second-Breakdown Current, Safe Operating
Region (VCE = 200 V) ...................................................... ..
Output Capacitance (VCB = 10 V, IE = 0,
f = 1 Mc/s) .......................................................................... ..
Thermal Resistance, Junction-to-Case
(Poe = 2 to 4 W, IE = 100 rnA) .................................. ..
• This value does not apply to type 2N3440.
=
TJ(opr)
TSTG
TL
=
=
VCEO(SUS)
350 min
VeE (sat)
0.5 max
VBE(sat)
1.3 max
IeEo
ICE V
20 max
500 max
20 max
lEBO
11>'10
hFE
40 to. 160
30· min
hf.
3 min
IS/b
50 min
Cobo
lOmax
pF
8J-e
30 max
DC/W
rnA
2N3440
TRANSISTOR
Si n-p-n triple-diffused type used in high-speed-switching and linear-amplifier applications such as high-voltage differential and operational amplifiers,
high-voltage inverters, and series regulators for industrial and military
applications. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base,
3 - collector and case. This type is identical with type 2N3439 except for
the following items:
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Voltage:
VBE = -1.5 V ........................................................................
Base open (sustaining voltage) ...................................... ..
VeBo
300
V
VeEV
VeEo(sus)
300
250
V
V
CHARACTERISTICS (At case temperature = 25 D C)
Collector-to-Emitter Sustaining Voltage
(Ie = 50 rnA, In
0) ...................................................... ..
Collector-Cutoff Current:
VeE = 200 V, IB
0 .......................................................... ..
VeE = 300 V, VBE = -1.5 V .......................................... ..
=
=
VeEo(sus)
IeEo
ICEv
250
V
50 max
500 max
p.A
p.A
2N3441
POWER TRANSISTOR
Si n-p-n diffused type for high-voltage applications in power-switching circuits, series- and shunt-regulator driver and output stages, and in dc-to-dc
converters in military, industrial, and commercial equipment. JEDEC TO-66,
Outline No.22. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange collector and case.
MAXIMUM RATINGS
COllector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE = -1.5 V ...................................................................... ..
Base open (sustaining voltage) ...................................... ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ...................................................................... ..
Base Current ............................................................................... .
Transistor Dissipation:
Te up to 25 C ...................................................................... ..
Te above 25'C ...................................................................... ..
D
VeBo
160
V
VeEv
VeEo(sus)
160
140
7
V
V
V
VEBO
Ie
In
PT
PT
3
2
A
A
29
W
See curve page 112
244
RCA Transistor Manual
MAXIMUM RATINGS (cont'd)
Temperature Range:
Operating (Junction) ........................................................... .
Storage ....................................................................................... .
Pin-Soldering Temperature (10 s max) ........................... .
CHARACTERISTICS (At case temperature
=
TJ
TSTG
Tp
25°C)
Collector-to-Emitter Breakdown Voltage:
Ie= 100mA,In = 0 ........................................................... .
Ie = 50 rnA, VBE = -1.5 V ............................................
Ie = 50 rnA, RBE = 100 n ..................................................
Collector-to-Emitter Saturation Voltage
(Ie = 0.5 A, In = 50 rnA) ............................................... .
Base-to-Emitter Voltage (VeE = 4 V, Ie = 0.5 A) ..... .
Collector-Cutoff Current:
VeE = 140 V, VBE = -1.5 V, Tc = 25·C ................... .
VeE = 140 V, VBE
-1.5 V, Te = 150·C ................. .
VeE = 140 V, IE = 0, T
25°C ..................................... .
. Emitter-Cutoff Current (VEB = 7 V, Ie = 0) ................
Static Forward-Current Transfer Ratio
(VeE = 4 V, Ie = 0.5 A) ................................................... .
Thermal Resistance, Junction-to-Case ..............................
=
TYPICAL COLLECTOR CHARACTERISTICS
en
w
0::
W
"-
lE
""
L.J?
~
I.O~O
0::
t:::
~
1;l
V
V
V
VeE (sat)
VBE
1 max
1.7 max
V
V
IeEv
ICEV
leBO
lEBO
5 max
6rnax
5rnax
1 max
rnA
rnA
rnA
rnA
h.'E
8J-e
20 to 80
6 max
·C/W
TYPE 2N3441
COLLECTOR-TO-EMITTER VOLTS (VCE)=4
en
~
~v
~
~
~
hl
10
1.0
7ft
~
o
5
BASE MILLIAMPERES (~
0,
50
100
150
200
COLLECTOR-TO-EMITTER VOLTS (VCE)
u O.5
o
"-v,,~~"
/ . <:t"
!I"'~~
.
I. 5
0::
~.
~~'t,\'&
2.0 f--- 1---0
w
"-
o
o
140 min
160 min
150 min
.:.'
i
:1 o. 5~
u
V(BR)CEV
V(BR)CER
TYPICAL TRANSFER CHARACTERISTICS
_ 2,5
,
~
V"
ZgO.6
~~
...dY
~!;O.4 r-..JO:
0:::0
1-:::::: ~
\'"
<>~0.2
I
o
• • "1000
COLLECTOR MILLIAMPERES (Ic)
92CS-12698T
l.,t~
;}
I)-
o!:;
~-
'"
V
35 min
TYPE 2N3512
COMMON-EMITTER CIRCUIT, BASE INPUT.
FREE-AIR TEMPERATURE (TFA)=25°C
;-
) ~J~id-~1/rrJ
o
'>'-
60 min
V(BR)CEO
TYPICAL SATURATION CHARACTERISTICS
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTIC
c
V(BR)CBO
200
400
600
800 1000
COLLECiOR MILLIAMPERES (Ic)
92CS-12699T
Technical Data for RCA Transistors
247
CHARACTERISTICS (cant'd)
Base-to-Emitter Voltage (Ie = 150 mAo
In = 7.5 mA) ....................................................................... .
Base-Cutoff Current (VeE = 30 V. VnE = -0.3 V) ....
Collector-Cutoff Current:
VeE
30 V. VBm
-0.3 V. TA
25·C ....................... .
VCI' = 30 V. VnE = -0.3 V. TA = 100·C ......................
Pulsed Static Forward-Current Transfer Ratio
(Vm, = 1 V. Ie = 0.5 A. t p = 400 p.s. df 2 3%) ........
Small-Signal Forward-Current Transfer Ratio
(VeE = 10 V. Ie = 50 mAo f = 100 Mc/s) ....................
Output Capacitance (Vcn
10 V. IE = O.
f = 0.14 Mc/s) ....................................................................... .
Storage Time (Vee = 6.4 V. Vnn = 15.9 V.
Ie
150 mAo In = 15 mA) ................................................
Turn-On Time (Vce = 6.4 V. Ie = 150 mAo
In 1 = 15 mAo lB. = -15 mA) ....................................... .
Turn-Off Time (Vee = 6.4 V. Vnn = 15.9 V.
Ie
150 mAo In. = -15 mAo Is 1 = 15 mA) ........... .
=
=
=
=
=
=
Vn"
InEv
1 max
0.5 max
p.A
leE V
IeEv
0.5 max
100 max
p.A
p.A
hFE (pulsed)
hf.
V
10 min
2.5 min
Coho
lOmax
pF
t.
30 max
ns
+ t,
t. +tt
30 max
ns
45 max
ns
td
2N3SS3
TRANSISTOR
Si n-p-n "overlay" epitaxial planar type used in cIa~ A, B, and C amplifiers,
frequency multipliers, or oscillators in vhf-uhf applications for industrial
and military communications. JEDEC TO-39, Outline No.12. Terminals: 1 emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE = -1.5 V ....................................................................... .
Base open ................................................................................. .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Transistor Dissipation:
Te up to 25"C ...................................................................... ..
To above 25·C ...................................................................... ..
Temperature Range:
Operating (Junction) ........................................................... .
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ...................... ..
CHARACTERISTICS (At case temperature
=
=
V
V
V
V
PT
PT
TJ(opr)
TSTG
TL
V(BR)CBO
=
=
=
=
65
65
40
4
1
=
=
=
=
=
=
=
=
A
7
W
See curve page 112
-65 to 200
-65 to 200
230
·C
·C
·C
65 min
V
V
25°C)
Collector-to-Base Breakdown Voltage (Ic
0.3 mAo
lE = 0) ..................................................................................... .
Collector-to-Emitter Breakdown Voltage:
Ie
0.2 A. In
O. pulsed through an inductor
L = 25 mHo df = 50% .......................................... ..
Ie = 0 to 0.2 A. VBE
-1.5 V. pulsed through an
inductor L = 25 mHo df = 50% ........................
Emitter-to-Base Breakdown Voltage (IE
0.1 mAo
Ie = 0) ......................................................................................
Collector-to-Emitter Saturation Voltage
(Ie
250 mAo lB
50 mA) .......................................... ..
Collector-Cutoff Current (VeE = 30 V. In = 0) .......... ..
Static Forward-Current Transfer Ratio
(VeE = 5 V. Ie = 250 mA) ................................................
Intrinsic Base-Spreading Resistance (VCE
28 V.
Ie = 100 mAo f = 100 Mc/s) ............................................
. Small-Signal Forward-Current Transfer Ratio
(VCE = 28 V. Ie
125 mAo f
100 Mc/s) .............. ..
Gain-Bandwidth Product (VeE = 28 V. Ie = 100 mA)
Output Capacitance (VCB = 30 V. IE = O.
f = 1 Mc/s) .......................................................................... ..
RF Power Output:
Unneutralized Amplifier-Vee = 28 V.
Pn, = 0.25 W. RG & RL
50 n .. f
175 Mcls ....
Oscillator-Vee
28 V. f
500 Mc/s .................... ..
=
VeRo
VeEv
VCEO
VEBO
Ie
V(BR)CEO
40 min
V(BR)CEV
65 min
V
V(BR)EBO
4 min
V
VCE(sat)
Im,o
1 max
0.1 max
V
rnA
hFE
10 to 100
rbb'
12
!l
hf.
iT
4 min
SOO
MCjs
lOmax
pF
2.5* min
1.5t
W
W
Cobo
POE
POE
• For conditions given. minimum efficiency = 50 per cent.
t For conditions given. typical efficiency = 30 per cent.
248
RCA Transistor Manual
.
TYPICAL SMALL-SIGNAL
OPERATION CHARACTERISTIC
TYPICAL OPERATION CHARACTERISTICS
~
TYPE 2N 3553
I
COLLECTOR-TO-EMITTER VOLTS (VCE)' 28
;::. 600 CASE TEMPERATURE (TC)=25"C
...o
::: 500
5
o
0:
11.
:r
---
-'
-.........
400
r-----i---i--t-t------r-----1
300
--
b
~ 200 -------------- --------- ----- ------z
..
..
l°'l!o
CD
I
;!;
9ZC$-12.717T
2N3583
40
60 80100
200
400
COLLECTOR CURRENT (Ici - MILLIAMPERES
92CS-12731T
TRANSISTOR
Si n-p-n triple-diffused type used in high-speed-switching and linear-amplifier applications such as high-voltage operational amplifiers, high-voltage
switches, switching regulators, converters, inverters, deflection and highfidelity amplifiers in military, industrial and commercial equipment. JEDEC
TO-66, Outline No.22. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Sustaining Voltage ........................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ....................................................................... .
Peak Collector Current ........................................................... .
Base Current .............................................................................. ..
Transistor Dissipation ............................................................ ..
Operating Temperature Range .......................................... ..
Pin-Soldering Temperature (10 s max) ........................... .
CHARACTERISTICS (At case temperature
=
VCRO
VCEO(SUS)
VERO
Ie
ie
IB
PT
Tc(opr)
Tp
25°C)
Collector-to-Emitter Sustaining Voltage:
Ic = 200 rnA, lB
0 ........................................................... .
RBE = 50 n, Ic = 500 rnA ............................................... .
Base-to-Emitter Saturation Voltage (Ic = 1 A,
lB = 100 rnA) ....................................................................... .
Collector-Cutoff Current:
VCE
150 V, In
0, To
25'C ................................... .
VBE = -1.5 V, VCE
225 V, Tc
25'C .................. ..
VBE = -1.5 V, VCE
225 V, To
200'C ................ ..
Emitter-Cutoff Current (VEB = 6 V, Ie = 0)
=
=
==
=
=
TYPE 2N3583
CASE}EMPERATURE (Tc) = 25"C
!j
[!l
800
600
IL:t-
400
Y/
0:
~
~
~
~
200
o
175 min
250 min
VBE(sat)
1.4 max
V
lOmax
1 max
5 max
5 max
rnA
rnA
rnA
rnA
ICIilV
IeEv
lEBO
TYPE 2N3583
COLLECTOR-TO-EMITTER VOLTS (VCE)'IO
hWCr\
\i
0:
...ti 150
III
0:
./£.-". :...?\4
3
III
~
25 WATTS
~
~
1.5
SASE MILLIAMPERES (I )=1
O.
~
25
50
75
100 125
150
175
COLLECTOR-lO-EMITTER VOLlS (VCE)
92CS-I2879T
V
V
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
Q200
1-
g
VCEO(SUS)
VCER(SUS)
ICEO
=
=
1000 TYPICAL COLLECTOR CHARACTERISTICS
u
250
V
175
V
V
6
A
2
A
5
A
1
See Rating Chart
-65 to 200
'c
255
'c
eg~
E
~1'E.1\"''t1l1\
100 I-
5o
0
~C
~ \'tC"
tiT
I
2
I
-55°C
III I
III I
"'-
2 4 68
2 4 68
2
10
102
10'
COlLECTOR MILLIAMPERES l:tel
• 68
4.68
10'
92CS-IH84T
Technical Data for RCA Transistors
249
CHARACTERISTlCS (cont'd)
Static Forward-Current Transfer Ratio:
VeE == 10 V. Ie == 100 rnA ................................................
VeE == 10 V. Ie == 1 A........................................................
Small-Signal Forward-Current Transfer Ratio
(VCE == 10 V. Ie == 200 rnA. f = 5 Mc/s) ........................
Second-Breakdown Collector Current (Base forwardbiased from zero uP. VeE == 100 V) ............................
Second-Breakdown Energy (Base reverse-biased.
RBE == 20 n. L == 100 pH. VBE == 4 V) ........................
Output Capacitance (VCB == 10 V. IE == O.
f == 1 Mc/s) ............................................................................
Thermal Resistance. Junction-to-Case (Ie == 500 rnA)
~
2N1583
f
~12N~5831
25" TYP
230 50
iii 2S
100'\.
20
I~
12S
IS
~
~ 10
'"~
5
i
o
h'e
3 min
IS/b
250 min
ES/b
50 min
pJ
Cobo
9J-e
120 max
5 max
pF
°C/W
rnA
MiX' VCEO-lisV
tJ~~
..!."}NJ..:-~
1Jo4 7"i;S/O
~8
II.
0:
'50 60
80
A
23
W
See curve page 112
TJ(opr)
Collector-to-Base Breakdown Voltage (Ie
0.5 rnA,
lE = 0) ......................................................................................
Colleetor-to-Emitter Breakdown Voltage:
Ic = 0.2 A. IB = 0, pulsed through an inductor
L = 25 mH, df
50% .................... :...................... .
Ic
0 to 0.2 A, VRE = -1.5 V, pulsed
through an inductor L = 25 mHo df = 50% ....
Emitter-to-Base Breakdown Voltage
(IE = 0.25 rnA. Ie = 0) ................................................... .
Collector-to-Emitter Saturation Voltage
(Ic
0.5 A. IB
0.1 A) ................................................... .
=
65
PT
PT
Temperature Range:
Operating (Junction) ......................................................... .
Storage ...............................................•........................................
Pin-Soldering Temperature (10 s max) ........................... .
CHARACTERISTICS (At case temperature
VCRO
VCEV
VCEO
VEDO
Ic
100
FREQUENCY-Moll
200
300
tICS-111m
253
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
=
=
Collector-Cutoff Current (VCE
30 V, I
0) ............
Intrinsic Base-Spreading Resistance (VCE
28 V,
Ic = 250 mA, f
200 Mc/s) ............................................
Gain-Bandwidth Product (VCE
28 V. Ic = 150 mAl
Output Capacitance (VCB = 30 V. IE =: 0,
f =: 1 Mc/s) ............................................................................
RF Power Output. Unneutralized:
Vcc =: 28 V. PIE
3.5 W. RG & RL
50 n.
f = 175 Mc/s ................................................................
Vcc = 28 V, P,E = 3 W, RG & RL = 50 0,
f
260 Mc/s ..............................................................
=
=
=
=
=
=
* For conditions given. nurumum efficiency
t For conditions given. minimum efficiency
=
ICEO
0.25 max
mA
rbb'
iT
6.5 typ
400 typ
0
Mc/s
Cobo
20 max
pF
POE
13.5* min
W
lot
POE
typ
W
70 per cent.
60 per cent.
TYPICAL SMALL-SIGNAL OPERATION
CHARACTERISTIC
~
::I!
I
~700
TYPE 2N3632
COLLECTOR-TO-EMITTERVOLTS (VcEI=28
CASE TEMPERATURE (Tcl- 25°C
13600
5
~soo
Q.
~400
o
V
I----
'"
io
..
:i 300
,
z
~
200
o
50
100
150
~
200
250
300
COLLECTOR MILLIAMPERES (Icl
92cS-1283OT
2N3730
POWER TRANSISTOR
Ge p-n-p diffused-collector graded-base type used in 114-degree 18-kV TV
deflection systems as a vertical-deflection output amplifier. This type, together with types 2N3731 (horizontal output), 2N3732 (horizontal driver),
and IN4785 (damper) make up a complete transistor/damper-diode complement. JEDEC TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage:
Peak ........................................................................................... .
Continuous ............................................................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Base Current ............................................................................... .
Transistor Dissipation:
T"'F up to 55'C ........................................................................
T"'F above 55'C ....................................................................
Temperature Range:
Operating (Junction) ......................................................... .
Storage ....................................................................................... .
Pin-Soldering Temperature (10 s max) ........................... .
VCBO
VCBO
VEBO
Ic
IE
PT
PT
-200
-60
-0.5
-3
±0.5
V
V
V
A
A
10
W
See curve page 112
TJ(opr)
TSTG
Tp
-65 to 85
-65 to 85
230
'c
'c
'c
V(BR)CBV
-200 min
V
VCE(sat)
VCE(sat)
-2 max
-1 max
V
V
0.5 typ
-200 max
1.5 max
·C/W
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (VBE =: 0.5 V.
Ic = 5 mAl ........................................................................... .
Collector-to-Emitter Saturation Voltage:
Ic =: -0.7 A, IE =: -0.02 A ................................................
Ic
-0.05 A. IE =: -0.005 A ........................................... .
Base-to-Emitter Voltage (Ic = -0.7 A.
IE
-0.02 A) ....................................................................... .
Collector-Cutoff CU.rrent (VCB =: -10 V. IE =: 0) ........
Thermal Resistance. Junction-to-Case ............................
=
=
VBE
ICBo
8J-c
V
/LA
254
RCA Transistor Manual
2N3731
POWER TRANSISTOR
Ge p-n-p diffused-collector graded-base type used in 114-degree 18-kV TV
deflection systems as a horizontal output amplifier. This type, together with
types 2N3730 (vertical output), 2N3732 (horizontal driver), and IN4785
(damper) make up a complete transistor/damper-diode complement. JEDEC
TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage:
Peak ............................................................................................
Continuous ............................................................................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current .......•................................................................
Base Current ............................................................................... .
Transistor Dissip,ation:
TMFupto55C ........................................................................
TMF above 55·C ..............................................•.........................
Temperature Range:
~fo~~~....~~~.~~~~~.... ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Pin-Soldering Temperature (10 s max) .........•..................
CHARACTERISTICS
=
Collector-to-Base Breakdown Voltage (VBm
0.5 V,
Ie
-0.25 A) ..........•.............................................................
Emitter-to-Base Breakdown Voltage (1m
100 mA,
Ie = 0) ••..••...••••••••..••...••..••••••..•••••••.•••..•••.••......•..•..•..••..••.•••.•••••
Collector-to-Emitter Saturation Voltage (Ie
-6 A,
IB
-0.4 A) .....................................•......................................
Base-to-Emitter Voltage (Ie
-6 A,
IB = -0.4 A) .........•...............•..••..............................................
Collector-Cutoff Current (VeB
-10 V, 1m = 0) ........
Turn-off Time ........................•.....................................................
Thermal Resistance, Junction-to-Case ..............................
=
=
=
=
=
=
-320
-60
-2
-10
+4,-1
veRO
VeBo
VmBo
Ie
Is
PT
PT
V
V
V
A
A
5
W
See curve page 112
Ts(opr)
TSTG
Tp
-65 to 185
-65 to 185
230
·C
·C
·C
V(BR)eBV
-320 min
V
V(BB)mBO
-2 min
V
Vem(sat)
-1.5 max
VBm
ICBo
t(off)
0.7
-200 max
1.2 max
1.5 max
p.s
·C/W
45
0.55
V
A
eJ-C
V
V
/LA
TYPICAL OPERATION IN HORIZONTAL-DEFLECTION AND
HIGH-VOLTAGE CIRCUIT
DC Supply Voltage •....•..............................................................
Average Supply Current ....................................................... .
Input Power:
Oscillator and driver circuits ............................................
°1'~e~C~ent
= 0 ........................................................
At beam current = 200 p.A ............................................
DC High-Voltage Output:
At beam current = 0 ........................................................... .
At beam current = 200 p.A ............................................... .
Yoke Current (peak-to-peak) ........................................... .
Peak Yoke Energy ....................................................................
Retrace Time ............................................................................... .
2N3732
1.5
W
18
22
W
W
18
17
10
2.5
11.5
kV
kV
A
mJ
JLS
POWER TRANSISTOR
Ge p-n-p diffused-collector graded-base type used in 114-degree 18-kV TV
deflection systems as a horizontal driver. This type, together with
types 2N3730 (vertical output), 2N3731 (horizontal output), and IN4785
(damper) make up a complete transistor/damper-diode complement. JEDEC
TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case. For typical operation in horizontal-deflection
and high-voltage circuit, refer to type 2N3731.
MAXIMUM RATINGS
Collector-to-Base Voltage:
Peak ............................................................................................
Continuous ............................................................................... .
Emitter-to-Base Voltage .; ........................................................
Collector Current ....................................................................... .
veBO
VeBO
VmBo
Ie
-100
-60
-0.5
-3
V
V
V
A
255
Technical Data for RCA Transistors
MAXIMUM RATINGS (cont'd)
Base Current ............................................................................. ...
Transistor Dissipation:
T"F up to 55·C ....................................................................
T"F above 55·C ....................................................................
Temperature Range:
Operating (Junction) ........................................................ ..
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ........................... .
Is
±0.5
PT
PT
A
3
W
See curve page 112
Tl(opr)
TSTG
Tp
-65 to 185
-65 to 185
230
·C
·C
·C
V(BR)CBV
-100 min
V
VeE (sat)
-2 max
V
0.5
-200 max
1.5 max
V
/.LA
·C/W
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (VEE = 0.5 V.
Ie = -5 rnA) .......................................................................... ..
Collector-to-Emitter Saturation Voltage
(Ie
-0.7 A, lB
-0.02 A) ........................................... .
Base-to-Emitter Voltage (Ie = -0.7 A,
In = -0.02 A) ...................................................................... ..
Collector-Cutoff Current (VCB
-10 V, IE
0) ...... ..
Thermal Resistance, Junction-to-Case ............................ ..
=
=
=
VBE
leBo
8J-"
=
2N3733
TRANSISTOR
Si n-p-n "overlay" epitaxial planar type used in large-signal, high-power
vhf-uhf applications in military and industrial communications equipment.
Intended for class A, B, C amplifier, frequency-multiplier, or oscillator
service. JEDEC TO-60, Outline No.20. Terminals: 1 - emitter, 2 - base,
3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Voltage:
VBE = -1.5 v ...................................................................... ..
Base open ..................................................................................
Emitter-to-Base Voltage ..........................................................
Peak Collector Current ........................................................... .
Transistor Dissipation:
Tc up to 25·C ....................................................................... .
Tc above 25·C ....................................................................... .
Temperature Range:
=
=
==
=
E
~14
15
:=I
I
t;
V(BR)CBO
!!Oil
... r-~'O
~, r-.....
~ !h
59
ffi 8
~
~
... 7
250
g::
:J:
3
b
'2
!i
~.
ID
I
l
~12
6
200
~
!-700
........
.!.13
-65 to 200
-65 to 200
230
TYPICAL SMALL-SIGNAL
OPERATION CHARACTERISTIC
TYPICAL OPERATION CHARACTERISTICS
TYPE 2N3733
COLLECTOR-lO-EMITTER VOLTS (VCE I=28
CASE TEMPERATURE (TCI = 25"C
A
23
W
See curve page 112
25°C)
Collector-to-Base Breakdown Voltage (Ic
0.5 rnA.
lE = 0) ..................................................................................... .
Collector-to-Emitter Breakdown Voltage:
Ie
0 to 200 rnA, VBE
-1.5 V, pulsed through
an inductor L = 25 mH, df = 50% ....................
Ie
0 to 200 rnA, In
0, pulsed through
an inductor L
25 mH, df
50% ....................
=
=
V
V
V
V
TJ(opr)
TSTG
Tp
~fo~~~~n~....~~~~.~~~~.~!. . ::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
=
65
65
40
4
3
PT
PT
Pin-Soldering Temperature (10 s max) .......................... ..
CHARACTERISTICS (At case temperature
Veno
VCEV
VCEO
VEBO
ic
200
/
--
'"
""
50
100
ISO
200
250
COLLECTOR MILLIAMPERES (~C)
300
92CS-12810T
256
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Emitter-to-Bilse Breakdown Voltage (1m = 0.25 rnA.
Ie
0) ......................................................................................
Collector-to-Emitter saturation Voltage
(Ie == O.S A. IB :::: 100 rnA) ................................................
Collector-Cutoff Current (Vcm
30 V. IB = 0) ............
Intrinsic Base-Spreading Resistance (Vem == 28 V.
Ie
2S0 mAo f == 200 Mc/s) ............................................
Gain-Bandwidth Product (Vcm == 28 V. Ic
150 mAl
Collector-to-Case Capacitance ................................................
Output Capacitance (VCR
30 V. 1m == 0,
f == 1 Mc/s) ............................................................................
RF Power Output Amplifier. Unneutralized:
Vcm
28 V. Pm
4 W. RG & RL
50 n.
f = 260 Mc/s ................................................................
VCE == 28 V, PIE == 4 W. RG & RL == SO n.
f == 400 Mc/s ................................................................
* For conditions given. Illlmmum efficiency
60 per
t For conditions given. minimum efficiency == 45 per
=
=
=
=
=
V
1 max
0.25 max
V
rnA
6.S
400
6 max
Mc/s
pF
20 max
pF
Cobo
=
2N3771
4 min
Vcm.(sat)
Iemo
rob'
fT
C,
=
=
V(BRJmBO
POE
POE
cent.
cent.
n
14.S"
W
lOt min
W
POWER TRANSISTOR
Si n-p-n type with high collector-current rating (30 A max) for intermediate- and high-power applications such as public-address amplifiers,
power supplies, and low-speed switching regulators and inverters. JEDEG
TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Voltage:
VBE == -1.S V ............................................................................
Base open ................................................................................ ..
Emitter-to-Base Voltage ..........................................................
Collector Current ...................................................................... ..
Transistor Dissipation:
Tc up to 2SoC ...................................................................... ..
Te above 2SoC ...................................................................... ..
Temperature Range:
.Operating (Junction) .......................................................... ..
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ........................... .
CHARACTERISTICS (At case temperature
=
... 15.0
!f12.S
ur
I,.
~~IO.O
:IE
c
800
U
I400
rl:
7.5
i::
II•
'-
2OQBASE MILLIAMPERES (IB)=50
'"
If'
o
Q5 LO L5 2.0 2.5 a.o lI.5 4.0 4.5
COI.LECTOIMO-EMITTER Wl..TS {VCEl
92CSoI3l11T
V
SO
40
5
30
V
V
V
A
ISO
W
See curve page 112
P'r
PT
T.T(opr)
TSTG
Tp
-65 to 200
-6S to 200
230
°C
°C
°C
V(BR)mBO
Smax
V
VCEV(SUS)
VeEo(sus)
SO min
40 min
V
V
VClll(sat)
2 max
V
TYPICAL TRANSFER CHARACTERISTICS
TYPE2N3771
COLLECTOR-TO-EMITTER VOLTS (VCE)-4
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N3771
CASE TEMPERATURE (T. ). 25"C
SO
VCEV
VCEO
VEno
Ie
= 25°C)
Emitter-to-Base Breakdown Voltage (1m == 5 rnA.
Ie = 0) ......................................................................................
Colleetor-to-Emitter Sustaining Voltage:
VBE == -1.S V. Ie == 3 A .................................................. ..
Ie
0.2 A, In
0 .............................................................. ..
Collector-to-Emitter Saturation Voltage
(IB == 1.S A. Ie == IS A. t p == 300 /LS.
p/s == 60 c/s) .............................................................. ..
=
VeBO
15
,
!:!
.,12.5
II!
~
~
0:
~5/.
10
§as
o
/
I£l~
CASE
MPERATURE (TC)"I50'C-
7.5
~
lrl..J 5
,
II
,V
0.5
1.0 L5 2.0 2.5 3.0
BASE-TO-SlITTER VOLTS"'YBEI
92CS e 13194T
257
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Base-to-Emitter Voltage (VeE == 4 V, 10 == 15 A,
t p == 300 p,s, pis == 60 c/s) ................................................
Collector-Cutoff Current:
VeB == 50 V, IE == O. Te == 25·C ........................................
VeB == 30 V, lE == 0, Te == 150·C ..................................... .
VeE == SO V. VBE == -1.S V, Te == 2S·C ....................... .
VeE == 30 V. VBE == -1.5 V, Te == 150·C ..................... .
VeE == 30 V. Is == 0, Te == 2S·C ....................................... .
Emitter-Cutoff Current (VEE
5 V, 10 == 0) ............... .
Pulsed Static Forward-Current Transfer Ratio
(VeE == 4 V, Ie == 15 A. t.
300 p.s,
pis == 60 cis) ............................................................... .
Thermal Resistance, Junction-to-Case ............................... .
=
=
VBE
2.7 max
V
leBO
leBO
IeEv
IeEv
101.0
lEBO
2 max
lOmax
2 max
lOmax
lOmax
5 max
mA
mA
mA
mA
mA
mA
15 to 60
1.7 max
·C/W
hFE (pulsed)
9J-0
2N3772
POWER TRANSISTOR
Si n-p-n type with high collector-current rating (30 A max) for intermediate- and high-power applications such as public-address amplifiers,
power supplies, and low-speed switching regulators and inverters. JEDEC
TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE == -l.S V ........................................................................
Base open ................................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ....................................................................... .
Transistor Dissipation:
To up to 25·C ........................................................................
To above 25·C ........................................................................
Temperature Range:
Operating (Junction) ......................................................... .
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ............................
CHARACTERISTICS (At case. temperature
SAsk MI~LIAM~ERES (I
~
7.e
V
,
~ ~O , ~
6
..J
u
2.e
o
r
V
V
V
A
V(BRlEBO
veEv~sus)
VeEo sus)
30000 200
100
50
92CS-13184T
·C
·C
·C
7 max
V
100 min
60 min
V
V
VeE (sat)
1.4 max
V
VBE
2.2 max
V
I
I
-65 to 200
-65 to 200
230
'TYPICAL TRANSFER CHARACTERISTICS
TYPE 2N3772
COLI:.ECTOR-TO-EMITTER VOLTS (VCE)o4V
) =600
o.e 1.0 1.5 2.0 2.e 3.0 3.5 4.0 4.5
COLLECTOR-TO- EMITTER VOLTS (VCE)
150
W
See eurve page 112
= 25°C)
TYPICAL OOLLECTOR CHARACTERISTICS
TYPE 2N~M2
. CASE TEMP RATURE (TC)-2e-C
15.0
f:l
ffi 10.0
V
100
60
7
30
TJ(opr)
TSTO
Tp
=
3>
100
PT
PT
Emittet-to-Base Breakdown Voltage (IE == 5 mA,
Ie == 0) ..................................................................................... .
Collector-to-Emitter Sustaining Voltage:
VBE == -1.5 V, Ie == 3 A ................................................... .
Ie == 0.2 A. IB == 0 ............................................................... .
Collector-to-Emitter Saturation Voltage
(IB == 1 A, Ie == 10 A, t.
300 p.s,
pis == 60 cis) ..............................................................
Base-to-Emitter Voltage (Vem == 4 V, Ie == 10 A,
t. = 300 p,s. pis == 60 cis) ................................................
~12.5
VeBo
Vemv
VCEO
VmBo
Ie
It
-
h
-
v-.'.5 LO 1.5 2.0 2.5 3.0
IIIASE-TO-EMITTER VOLTS (VSE)
IlCS-13Ie8T
RCA Transistor Manual
258
CHARACTERISTICS (cont'd}
Collector-Cutoff Current:
VOB = 100 V, 1m = 0, To
25·C .................................. ..
VCB
30 V, 1m = 0, Tc
l50·C ....................................
Vcm = 100 V, VBm
-1.5 V, Tc
25°C •.•..•........•.....
Vcm = 30 V, VBE = -1.5 V, Tc = 150°C ....................
VCE = 50 V, IB
0, Tc
25°C ....................................
Emitter-Cutoff Current (VEB
7 V, Ic = 0) ............... .
Pulsed Static Forward-Current Transfer Ratio
(VCE = 4 V, Ie
10 A, t p := 300 /LS,
pis
60 cis) ................................................................
Thenoal Resistance, Junction-to-Case ............................... .
=
=
=
=
=
==
==
lEBO
5 max
lOmax
5 max
lOmax
lOmax
5 max
hFE (pulsed)
eJ-e
15 to 60
1.7 max
leBo
lOBO
ICEv
Icmy
=
2N3773
ICIOO
mA
mA
mA
mA
mA
mA
·C/W
POWER TRANSISTOR
Si n-p-n type with high collector-current rating (30 A max) for intermediate- and high-power applications such as public-address amplifiers,
power supplies, and low-speed switching regulators and inverters. JEDEC
TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage:
VBm = -1.5 V ........................................................................
Base open ...........•....................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ......................................................................
Transistor Dissipation:
Tc up to 25°C ...................................................................... ..
Tc above 25°C ....................................................................... .
Temperature Range:
Operating (Junction) ............................................................
Storage ....................................................................................... .
Pin-Soldering Temperature (10 s max) ........................... .
CHARACTERISTICS (At case temperature
=
=
=
=
=
15.0
U
::l
BASE MILLIAMPERES (Ial-500 -
Q.
::I!
... 7.5 f-f'h
a:
~..,
iU
... V
5.0
..J
5u
2.5
If'"
o
40043001200100
-65 to 200
-65 to 200
230
°C
°C
·C
7 max
V
160 min
140 min
V
V
VeE (sat)
1.4 max
V
VBE
2.2 max
V
ICBO
leBO
leEY
ICEY
ICEO
2 max
lOmax
2 max
lOmax
lOmax
rnA
VeEv~sUS)
VeEo sus)
=
~~""r+fFFF
::\10.0
W
150
See curve page 112
V(BR)EBO
=
mA
rnA
mA
mA
TYPICAL TRANSFER CHARACTERISTICS
TYPE 2N3773
COLLECTOR-TO-EMITTER VOLTS (VCElo4V
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 2N3773
!::12.5
V
V
V
A
25·C)
=
==
V
160
140
7
30
TJ(opr)
TSTG
Tp
=
=
160
VeEY
VeEo
VEBO
Ic
PT
PT
Emitter-to-Base Breakdown Voltage (IE = 5 rnA,
Ic = 0) ......................................................................................
Collectcr-to-Emitter Sustaining Voltage:
VBE
-1.5 V, Ic = 3 A ....................................................
Ic=0.2A.IB=0 .............................................................. ..
Collector-to_Emitter Saturation Voltage
(lB = 0.8 A, Ic = 8 A, t p
300 "s,
pis
60 cis) ............................................................
Base-to-Emitter Voltage (VCE
4 V, 10
8 A,
t p = 300 /LS, pis = 60 cis) ................................................
Collector-Cutoff Current:
VeB
140 V, IE
O. Tc = 25°C .................................. ..
VCB
30 V, IE
0, Tc
150°C ................................... .
VCE = 140 V, VBE = -1.5 V, Tc
25°C .................. ..
VCE
30 V. VBm = -1.5 V, Te := 150·C .................. ..
Vcm = 120 V. lB = 0, Tc := 25°C ....................................
=
VeBO
~
~ 10
r- I--~
...a: 7.5 I--- ~~/{J
/:t~~1 , '
::I!
~~~'&V
e
~5.0 I--- ~c
..J
,~
..J
5r-
8 2•5
~,
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
COLLECTOR-TO-EMITTER VOLTS (VCEl
92CS-13196T
o
V'
0.5 1.0 1.5 2.0 2.5 3.0
BASE-TO-EMITTER VOLTS ("eEl
92CS-13199T
259
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Emitter-Cutoff Current (VEB := 7 V. Ie := 0) ................
Pulsed Static Forward-Current Transfer Ratio
(VeE := 4 V. Ie
8 A. t p = 300 J),S.
p/s = 60 c/s) ............................................................
Thermal Resistance. Junction-to-Case ................................
lEBO
=
hFE(pulsed)
8J-e
5 max
mA
15 to 60
1.7 max
·C/W
2N3866
TRANSISTOR
Si n-p-n "overlay" epitaxial planar type for vhf-uhf applications in class
A, B, and C amplifiers, frequency multipliers, and oscillators in military
and industrial communications equipment. JEDEC TO-39, Outline No.12.
Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage:
RBE = 10 n ................................................................................
Base open ................................................................................ ..
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Transistor Dissipation:
Te up to 25·C ...................................................................... ..
Te above 25·C ....................................................................... .
Temperature Range:
Operating (Junction) ............................................................
Storage ....................................................................................... .
Lead-Soldering Temperature (10 s max) ....................... .
CHARACTERISTICS (At case temperature
=
=
==
• For conditions given. mmllnum efficiency _
55
V
55
30
3.5
0.4
V
V
V
A
PT
PT
5
W
See curve page 112
TJ(opr)
Tsra
·C
·C
·C
-65 to 200
-65 to 200
230
TL
= 25°C)
Collector-to-Base Breakdown Voltage (Ie := 0.1 rnA.
lE := 0) .................................................................................... ..
Emitter-to-Base Breakdown Voltage (IE := 0.1 mAo
Ie := 0) .................................................................................... ..
Collector-to-Emitter Sustaining Voltage:
Ie := 5 rnA. RBE
10 n ....................................................
Ie := 5 mAo lB := 0 ................................................................
Collector-to-Emitter Saturation Voltage
(Ie := 100 mAo lB := 20 mAl ............................................
Collector-Cutoff Current (VeE = 28 V. IB = 0) ...... ..
Gain-Bandwidth Product (VeE := 15 V. Ie = 25 mAl
Output Capacitance (VeB := 30 V. IE
O.
f = 1 Mc/s) .......................................................................... ..
RF Power-Output Class C Amplifier. Unneutralized:
Vee
28 V. PIE = 0.05 W. f
100 Mc/s ....................
Vee := 28 V. PIE = 0.1 W. f
400.Mc/s .................... ..
=
VeBo
VeER
VeEo
VEBO
Ie
VCBR)eBO
55 min
V
VCBR)EBO
3.5 min
V
VCER(SUS)
VeEo(sus)
55 min
30 min
V
V
VCE(sat)
IeEo
iT
1 max
20 max
800
Mcls
Cobo
3 max
pF
POE
POE
1.8*
It min
W
W
V
/LA
60 per cent.
t For conditions given. minimum efficiency = 45 per cent.
J!!
Ie
f
'TYPICAL. SMAL.L.-SIGNAL.
OPERATION·CHARACTERISTICS
TYPICAL OPERATION CHARACTERISTICS
TYPE 2N3866
COLLECTOR SUPPLY VOLTS (VCC'-28V
3.0 CASE TEMPERATURE (TC'-25+
TYPE 2N3866
CASE TEMPERATURE (Tel- 25'C
;:.
gz.o
:>
28
l--":
800
..S...
~
60CI - - '
ffi 1.0
~~~E~
~<1'4'~
~.i.4'
CP"
"
20.81----I---~-..:,;.-I~
::: 0.6L_ _ _..L_ _ _..J.._-lL--L-.-l
100
200
400
FREQUENCY-Mel.
etCI-ISI4.,.
~~$
~""'~ ~
",iJ
i
2""
o
20
40
60
COLLECTOR MILLIAMPERES
80
ttcl
100
92CS-13158T
260
RCA Transistor Manual
2N3878
POWER TRANSISTOR
Si n-p-n epitaxial type used in af, rf, and ultrasonic applications such as
low-distortion power amplifiers, oscillators, switching regulators, series
regulators, converters, and inverters. JEDEC TO-66, Outline No.22. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case.
MAXIMUM RATINGS
g~B:t~~:~~:~ftt~O~~ftitge':""""""""""""""""""""" ..........
RBE =50 n ................................................................................
VCBO
Base open (sustaining voltage) ......................................
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Base Current ................................................................................
Transistor Dissipation:
Tc up to 25'C ........................................................................
Tc above 25'C ........................................................................
Temperature Range:
Operating (Junction) ......................................................... .
Storage ........................................................................................
Pin-Soldering Temperature (10 S max) ............................
CHARACTERISTICS (At case temperature
=
=
=
In
PT
PT
35
W
See curve page 112
TJ(opr)
TSTO
Tp
-65 to 200
-65 to 200
255
'C
'C
'C
50 min
65 min
V
V
2 max
2.5 max
V
V
5 max
mA
VCEO(SUS)
VCER(SUS)
VCE(sat)
VDE
ICEo
MAXIMUM DC OPERATING AREAS
MAXIMUM PULSE OPERATING AREAS
TYPE 2N3878
CASE TEMPERATURE (TC)=25o~
I-PULSE OPERATION--!
U6 I--Ic MAX.
Mm.
~
(CONTINUOUS)
~' "
I I
., 4
o ~ O.lm•
{~
V
V
V
A
A
V
65
50
7
7
5
= 25'C)
Collector-to-Emitter Sustaining Voltage:
Ic = 0.2 A, b = 0 ................................................................
Ic
0.2 A, RBE = 50 n ........................................................
Collector-to-Emitter Saturation Voltage
(Ic = 4 A, IB = 0.5 A) ........................................................
Base-to-Emitter Voltage (VCE
2 V, Ic = 4 A) ...... ..
Collector-Cutoff Current:
VCE = 40 V, IB
0, Tc
25'C ........................................
=
120
VCER(SUS)
VCEO(SUS)
VEDO
Ic
10
...
'"~
c
2
~I
... 8
:
e 81----'1-----'1--w';&"'<-"""f""'2'\,'
61--!1------cI--H'
~
IrbLI~ITED
4
21
I
"2
II!
ll~~---+~~~~~~
ro~~~
'!I
...J
6u
K">..
~U'~~,..J\.:
0c.~
4X J>
VCEO
MAX.
4."10
46"100
COLLECTOR-TO-EMITTER VOLTS (VCE)
41---!1-------jI--HH-"'1
.--p.,~ol'Ii}-
8
0.1 L-----,r----,!o-t-,I;-1.-~--f~;-;\-J
I
92SS-2194T
4·"10
4·"100
COLLECTOR-TO-EMITTER VOLTS (VCE)
92SS-2195T
TYPICAL COLLECTOR CHARACTERISTICS
TYPICAL TRANSFER CHARACTERISTICS
•L
TYPE 2N3878
_L
~~LECTOR-TO-EMITTER
VOLTS (VcE,-2
1$'1
~(f/...f'-
~,tj,
)j~~\;'-L
~'
..
I
o
2468101214
COLLECTOR-TO-EMITTER VOLTS (VeE'
92SS 219TT
o
1/"
v,'
"" ,
f'
0.5
1.0
1.5
BASE-TO-EMITTERVOLTS IVSE)
2,0
S2CS 13228T
261
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
VeE == 100 V. VBE == -1.5 V. Te == 25"C ....................
VeE == 100 V. VB .. = -1.5 V. Te == 150°C ................. .
Emitter-Cutoff Current (VBB = 4 V. Ie == 0) ............... .
Static Forward-Current Transfer Ratio:
VeE == 5 V. Ie = 0.5 A ....................................................... .
VeE == 5 V. Ie = 4 A ........................................................ ..
VeE == 2 V. Ie == 4 A ..........................................................
Small-Signal Forward-Current Transfer Ratio
(VeE = 10 V. Ie = 0.5 A. f == 10 Mc/s) .................. ..
Second-Breakdown Collector Current (VeE = 40 V.
base forward-biased) ........................................................... .
Second-Breakdown Energy (RBE = 50 n. L = 125 JLH.
VBE == -4 V. base reverse-biased) ................................
Output Capacitance (VCB = 10 V. IE = O.
f = 1 Mc/s) ........................................................................... .
Thennal Resistance. Junction-to-Case ............................... .
IeBV
IeEv
4 max
4rnax
4 max
lEBO
rnA
rnA
rnA
50 to 200
20 min
8 min
hr"
hrE
hrE
4rnin
hte
lsi ..
750rnin
rnA
Es/b
1rnin
mJ
Cobo
175 max
5 max
·Cl~
9J-e
2N3879
POWER TRANSISTOR
Si n-p-n epitaxial type used in af, rf, and ultrasonic applications such as
low-distortion power amplifiers, oscillators, switching regulators, series
regulators, converters and inverters. JEDEC TO-66, Outline No.22. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case.
This type is identical with type 2N3878 except for collector-to-emitter voltages of VeBR(SUS)
90 V and VeEo(sus)
75 V, and the following items:
=
=
CHARACTERISTICS (At case temperature
=
25°C)
Collector-to-Emitter Saturation Voltage
(Ie = 4 A. IB = 0.4 A) ....................................................
Base-to-Emitter Voltage (VeE = 2 V. Ie = 4 A) ....... .
Emitter-Cutoff Current (VEB = 4 V. Ie = 0) ................
Static Forward-Current Transfer Ratio:
VCE = 5 V. Ie == 0.5 A ....................................................... .
VeE == 5 V. Ie = 4 A ....................................................... .
VeE
2 V. Ie == 4 A ....................................................... .
Second-Breakdown Collector Current (VeE = 40 V.
base forward-biased) ........................................................... .
Delay Time (Vee == 30 V. Ie = 4 A.
IB1 = 0.4 A. lB.
-0.4 A) ........................................... .
Rise Time (Vee = 30 V. Ie == 4 A.
IB1 = 0.4 A. lB.
-0.4 A) ........................................... .
Storage Time (Vee = 30 V. Ie == 4 A.
IB1 = 0.4 A. lB. = -0.4 A) ........................................... .
Fall Time (Vcc = 30 V. Ic == 4 A.
lsI = 0.4 A. lB.
-0.4 A) ........................................... .
=
VCE(sat)
VBE
1.2 max
1.8rnax
2 max
lEBO
hFE
40rnin
20 to 80
12 min
Is/b
hF"
hFE
V
V
rnA
500rnin
rnA
=
40rnax
ns
=
tr
400rnax
ns
t.
800rnax
ns
=
tt
400rnax
ns
MAXIMUM PULSE OPERATING AREAS
10 r--~-,.--,..,..,.-....,..='-="==:-.
TYPE 2N3879
10 CASE TEMPERATURE (Tcl= 25°C
8
!--PULSE OPERATlON~
.14ol'~ ~0.3m.
~
.".MAX.
IC
4 (CONTINUOUSl
U
13
II:
~\
"\\
•
4
~"II
..
i
1==t::=++t+==+=rsll~
4 . 8 10
2
4 . 8 100
COLLECTOR-TO-EMITTER VOLTS (VeE)
'2SS-2712T
~
~
8 2~-4---+-+~~-4~-r~~
2
,f'
~~.
8
• f--f--f-~~
61
Ci
I
§o 4f--f--~~~'
0.1
~
'flo.
"'~<~
.,,,,,,,~
2
§ I f--f--I-'
II:
...~
ol'1g"",
~;o.
!:! 2
><
:Ii
I~
~
0.I
B
•I
•
8
10
2
4
•
8
100
COLLECTOR-TO-EMITTER VOLTS (VCE'
92SS 2793T
262
RCA Transistor Manual
2N3932
TRANSISTOR
Si n-p-n epitaxial planar type for general purpose vhf-uhf applications in
rf amplifiers. Outline No.27 (4-lead). Terminals: 1 - emitter, 2 - base, 3 collector, 4 - case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Vouage ............................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ..................................................................... .
Transistor Dissipation:
TA up to 25°C ........................................................................
TA above 25°C ....................................................................... .
Temperature Range:
Operating (Junction) ........................................................ ..
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ....................... .
VCBO
VCEO
VEBO
Ie
30
V
20
V
2.5
V
Limited by Power
Dissipation
PT
PT
175
mW
See curve page 112
-65 to 175
-65 to 175
230
'C
'C
'C
V(BRlCBO
30 min
V
V(BRlQEO
20 min
V
V(BRlEBO
ICBo
2.5 min
0.01 max
V
/loA
7.5 to 16
750 min
Me/s
rb'cc
lto8
ps
Cobo
0.55 max
pF
hFE
40 to 150
TJ(opr)
TSTG
TL
CHARACTERISTICS
Collector-to-Base Breakdown Voltage (Ie = 0.001 mAo
lE = 0) ..................................................................................... .
Collector-to-Emitter Breakdown Voltage (Ie = 1 mAo
i l = O)~ ..................................................................................... .
Emitter-to-Base Breakdown Voltage (IE
0.001 mAo
Ie = 0) ......................................................................................
Collector-Cutoff Current (VCB
15 V. lE
0) ...... ..
Small-Signal Forward-Current Transfer Ratio
(VCE
8 V. Ic
2 mAo f
100 Mc/s.
lead No. 4 grounded) ....................................................... .
Gain-Bandwidth Product ....................................................... .
Collector-to-Base Time Constant (VeB
8 V.
IE = 2 mAo f = 31.9 Mc/s) ............................................
Output Capacitance (VCB
8 V. IE
O.
f =: 0.1 to 1 Mc/s. lead Nos. 1 and 4 connected
to guard terminal) .............................................................. ..
Static Forward-Current Transfer Ratio
(VCE = 8 V. Ic = 2 mAl ....................................................
Small-Signal Power Gain. Unneutralized Amplifier
(VCB = 8 V. Ic = 2 mAo f
200 Me/s.
lead No. 4 grounded) ....................................................... .
Noise Figure:
VCE
8 V. Ie
2 mAo Rs
200 n. f
200 Me/s ....
VeE = 6 V. Ie
1.5 mAo Rs
100 n.
f = 450 Me/s ................................................................
=
=
=
=
=
=
=
=
=
=
=
==
==
=
TYPICAL SMALL-SIGNAL FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
TYPE 2N3932
:!
14 COMMON-EMITTER CIRCUIT. BASE INPUT;
OUTPUT SHORT-CIRCUITED.
t:"~1 FREQUENCY (f) • 100 Mell
2 ~IR TEMPE1RATUjE ITFAI' 2S'C
7
~:
~~ 10
i~
~I!:
8
~~
6
~~
4
~!i
.!.:::>
~"«l~t£1I
o'J-~
f
T
~~J~J'
TYPE 2N4012
COLLECTOR-TO-EMITTER VOLTS (VCE 1= 28·
CASE TEMPERATURE (Tcl- 25"C
8500
~
it
I
\ ,~
"I
~ ~~
0.9
1.0
1.1
1.2
1.3
1.4
OUTPUT FREQUENCY(fOUTI-Gc/s
~400
r-.....
~
!300
1
z
1.5
Ci
'" 200
o
92CS-13465T
50
100
150
200
COLLECTOR MILLIAMPERES
250
300
(lei
92CS-12569T
2N4036
POWER TRANSISTOR
Si p-n-p double-diffused epitaxial planar type used in a wide variety of
small-signal, medium-power, and high-speed saturated switching applications in military, industrial, and commercial equipment. The p-n-p construction permits complementary operation with a matching n-p-n type
such as the 2N2102. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Sustaining Voltage:
VBE
1.5 v .......................................................................... ..
RBE~200n ........................................................................... .
Base open ................................................................................ ..
=
~~J~~~?Oc~~n1~.~~:.~~ ...::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Base Current .............................................................................. ..
Transistor Dissip,ation:.
TA up to 25 C ....................................................................... .
Te up to 25°C ...................................................................... ..
TA or Te above 25°C ....................................................... .
Temperature Range:
~t~~~~~~... ~~~~~~~~~~....::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Lead-Soldering Temperature (10 s max) ........................
* See curve for maximum pulse operating areas.
CHARACTERISTICS (At case temperature
=
=
==
=
=
=
=
==
=
PT
PT
PT
-90
V
-85
-85
-65
-7
-1
-0.5
V
V
V
V
A
A
1
W
7
W
See curve page 112
TJ(opr)
TSTG
Tr.
-65 to 200
-65 to 200
230
°c
°c
°C
V(BR)eBO
-90 min
V
V(BR)EBO
-7mln
V
-85mln
-85 min
-65 min
V
= 25°C)
Collector-to-Base Breakdown Voltage (Ie == 0.1 mA,
IE = 0) ......................................................................................
Emitter-to-Base Breakdown Voltage (IE
-0.1 rnA,
Ie == 0) ......................................................................................
Collector-to-Emitter Sustaining Voltage:
VBE
1.5 V, Ie == -100 mA ............................................
RBE ~ 200 n, Ie == -100 rnA ............................................
Ie == -100 mA, In == 0 ........................................................
Collector-to-Emltter Saturation Voltage
(Ie == -150 mA, IB == -15 mAl ................................... .
Collector-Cutoff Current:
VeB == -60 V, IE == 0 ........................................................
VeE == -30 V, IB
0 ........................................................
Emitter-Cutoff Current (VEB = -5 V, Ie == 0) ............
Static Forward-Current Transfer Ratio
(VeE == -10 V, Ie == -0.1 mAl ....................................
Pulsed Static. Forward-Current Transfer Ratio:
VeE == -10 V, Ie == -150 mA, t p = 300 /LS, df ~ 2%
VeE == -10 V, Ie == -500 rnA, t p = 300 /LS, df ~ 2%
Small-Signal Forward-Current Transfer Ratio
(VeE == -10 V, Ie == -50 mA, f
20 Mc/s) ............
Input Capacitance (VEB
-0.5 V, Ie == 0) ................
Output Capacitance (VCB
-10 V, IE
0) ............... .
Saturated Switching Tum-On Time (VeE
-.10 V,
Ie
-150 mA, rB,
-15 mA, VBB :::::: 4 V) ..........
Saturated Switching Turn-Off Time (VeE
-30 V,
Ie = -150 mA, IB,
15 mA, VBB :::::: 4 V) ........ ..
Thermal Resistance, Junction-to-Case ............................
Thermal Resistance, Junction-to-Ambient ....................
=
VeBo
VCEV(SUS)
VeER (SUS)
VeEo(sus)
VEBO
Ie
IB
veEv~SUS)
VCER sus)
'VeEo(sus)
-0.65 max
V
-0.002 max
-0.5 max
-0.02 max
/LA
/LA
/LA
VClIl(sat)
leBO
IeEo
lEBO
hFE
hFE (pulsed)
hJ!E (pulsed)
hr.
V
V
20 min
40 to 120
20 min
3 min
90 max
30 max
pF
pF
td+tr
110 max
ns
t. + tr
e.-e
e.-A
700 max
25 max
165 max
elbo
Cobo
Technical Data for RCA Transistors
265
TYPICAL SWITCHING-TIME CHARACTERISTICS
MAXIMUM OPERATING AREAS
I I
TYPE 2N4036
CASE TEMPERATURE (TC)·2S·
I
I
I !":PULSE OPERATION,
~IOO~
IC MAX. T
-- (CONTINUOUS)
,
I I
OJ
II:
OJ
.
1
"-
:Ii
II:
g
f.:l.J
.J
o
U
21------·
11
-+--
~r.&-:!~;",t
/."Od'~ :i
0..0 ~b""~
og
l--I
:
<".p~:..~):~ ~l
/01r I" :~
r,;.'----'
~\
, VCEOMAX.·-40V
'
(2N4037l
"H VCE~
MAX.·-65V
I N4036)
•
4
1T T I
I
4
6
8
10
~
z
8UJ
TYPE2N4036
1000 IC 'IOIBI' IOIB2
• FREE-AIR TEMPERATURE (TFA)' 2S·C
.,o
6
<[
2
z
Z
~
100
'"
:;:
4
;::
,
I
4
~
.,3i
6 8100
COLLECTOR-TO-EMITTER VOLTS (VCE)
••
--
---
I--
-
e: (1., - f I 'r--.
~~~
I
Z
+---L..
--=~frJ~r~-=-+---k-""~
~
~.
ts "'-1::-
-
-?'S~lt!!..-::t=
~TIMElti)f-
2[---1--
~(4r -
i
-I'
11"41£ (td)
10
-10
6
8
6
-100
8
-1000
COLLECTOR MILLIAMPERES (IC)
S2LS-1290T
$Z~~-1267T
2N4037
POWER TRANSISTOR
Si p-n-p double-diffused epitaxial planar type used in a wide variety of
small-signal, medium-power applications in military, industrial, and commercial equipment. The p-n-p construction permits complementary operation with a matching n-p-n type such as the 2N3053. JEDEC TO-5, Outline
No.3, Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ...................................................... ..
Collector-to-Emitter Sustaining Voltage:
VBIf = 1.5 V ............................................................................
RBE ~ 200 n ........................................................................... .
Base open ................................................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector Current ...................................................................... ..
Base Current .............................................................................. ..
Transistor DissWation:·
TA up to 25 C ....................................................................... .
Te up to 25·C ....................................................................... .
TA or Te above 25·C .......................................................... ..
Temperature Range:
Operating (Junction) ......................................................... .
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
VCBO
-60
V
VeE v (sus)
VCER(SUS)
VCEO(SUS)
VEBO
Ie
In
-60
-60
-40
V
V
V
V
PT
PT
PT
TJ (opr)
TSTG
Tr,
-7
-1
-0.5
A
A
1
W
W
7
See curve page 112
-65 to 200
-65 to 200
230
·C
·C
·C
• See curve for maximum pulse operating areas.
CHARACTERISTICS (At case temperature = 25°C)
Collector-to-Base Breakdown Voltage (Ie = -0.1 rnA,
IE
0) ......................................................................................
Emitter-to-Base Breakdown Voltage (lE = -0.1 rnA,
Ie = 0) ......................................................................................
Collector-to-Emitter Sustaining Voltage:
VBE = 1.5 V, Ie = -100 rnA .......................................... ..
RBE ~ 200 n, Ic = -100 rnA ........................................... .
Ie = -100 rnA, In = 0 ........................................................
Collector-to-Emitter Saturation Voltage
(Ie
-150 rnA, In
-15 rnA) ....................................... .
Collector-Cutoff Current:
VeB
-60 V, IE
0 ....................................................... .
=
=
=
=
=
E:i~ter~c;rt~'b: '2u:;errt ~V~~ ..;; ..
I~
Static Forward-Current Transfer Ratio
(VeE = -10 V, Ie = -I rnA) ...................................... ..
Pulsed Static Forward-Current Transfer Ratio
(VeE
-10 V, Ic
-150 rnA, t.
300 /LS,
df ~ 2%) ................................................................................
Small-Sigrial Forward-Current Transfer Ratio
(VCE
-10 V, Ie
-50 rnA, f
20 Mc/s) ........... .
Input Capacitance (VEB
-0.5 V, Ie
0) ................... .
Output Capacitance (VCB = -10 V, IE = 0) ................... .
Thermal Resistance, Junction-to-Case ........................... .
Thermal Resistance, Junction-to-Ambient .................. ..
=
=
=
==
::.:5.. ·V; .. ..;;;· 'O'j"'::::::::::::
=
==
VCBR)CBO
-60 min
V
V(BR)EBO
-7 min
V
V
VeE v (sus)
VCER(SUS)
VeEo(sus)
VCE(sat)
ICBO
ICEO
lEBO
hFE
-60 min
-60 min
-40 min
-1.4 max
V
-0.25 max
-5 max
-1 max
/LA
/LA
/LA
15 min
hFE (pulsed)
20 to 100
hf.
3 min
90 max
30 max
25 max
165 max
Clbo
Cobo
eJ-C
e.r-A
V
V
pF
.cJ'':
·C/W
266
RCA Transistor Manual
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTICS
TYPICAL COLLECTOR CHARACTERISTICS
_ -600 TYPE 2N4037
TYPE 2N4037
COLLEClOR-1l)-EMITTER VOLTAGE (VCE)o-IOV
t1 _500I-F_R_EE_-rA_IR_TErM_P-=E~RAr:ru~R-=E;..(T:.!~~A::.,)=~2=-5~·,,:,C_--l
!3
:~
i-~~-~-~~~~~~::~
_
-0_ _
..
__-..,-6
:3 -300
-5
o
i
-
\~o;;
-I-.
\
.1~~"IlRE (TFA)=2so
__
~",f'
I
I
.~\,,1......
~,,~
~
C
,\
I\i
-~~
-Z8
0
92LS-1291T
-0.1
to.
I
I I
0
4 .8
2
-1.0
2
4 .8
2
-10
'.\
Ii
4 .8
-100
2
4 6
e
-IOOC
COLLECTOR MILLIAMPERES (Ie)
92LS-1292T
3N98
FIELD-EFFECT TRANSISTOR
Si insulated-gate field-effect (MOS) n-channel depletion type for low-power
af and rf applications in which high-input resistance (1015 0) is required
at frequencies to 60 Mc/s and conservation of battery power is a primary
consideration. Similar to JEDEC TO-72, Outline No.23. Terminals: 1 source, 2 - gate, 3 - drain, 4 - substrate and case.
TYPIC~TL.?~-~~Xncf~~I~~~J~ONAL
TYPICAL DRAIN CHARACTERISTICS
TYPE3N981
1 1 1
1
cO~=ig.w~cfocW8~~&~IlBSTRATE I--FREE-AIR TEMPERATURE (TFA)02S0C
I
110'
0
1// ~
8
17
7
rf V
rl
'7
..-
S
4
3
V
/
0
0.1
0.2
0.3
92C$-12824T
TYPICAL AMPLIFICATIONFACTOR CHARACTERISTIC
'~ m"....
17
0
I-~
}
150
~
IZ5
---~,,,~rr,,"-~
CONNECTED TO SOURCE
DRAIN-TO-SOURCE VOLTS (VDS)=12
FREQUENCY (f)ol kc/s
FREE-AIR TEMPERATURE (TFA)=Z5°C
/tJOO
~
2
~
<.>
-3
;;:-,.O-SQIlRCE VOLTS (VGS)·-4
~
-0.2 -0.1
DRAIN-TO-SOURCE VOLTS (VDS)
J---
2
o
-0.3
1..--'
V
6
I
-0.3l...::1:-~~+'_+---::J.,-~=--+-...J
7
9
5.
5101520253035
DRAlN-TQ-SOURCE VOLTS (~~~-IZlJ8T
75
1\
'\
ii:
:; 50
...::IE
---
Z
~
......
g
!i!
i..
'"z
II:
8S
I
z
5
10
15
20
COLLECTOR-TO-EMITTER VOLTS (VCE)
~
)(
o
OJ
/
-I
-2
-3
-4
-S
-6
-7
EMITTER MILLIAMPERES (lEI
92CS-1317IT
92C5-13168T
40239
~
V
50
iii
~ 800
/
100
0t.>
u
iii
iE
OJ
MAG
OJ
r-
goo
o
~
90 mmhos
=
TRANSISTOR
Si n-p-n type used as 45-Mc/ s if amplifier in television receivers. Outline
No.27 (4-lead). Terminals: 1 - emitter, 2 - base, 3 - collector, 4 - connected
to case. This type is identical with type 40238 except for the following item:
CHARACTERISTICS
Static Forward-Current Transfer Ratio
(VCIll
6 V. IE
-1 rnA) ................................................
=
=
40240
hFIll
27 to 100
TRANSISTOR
Si n-p-n type used as 45-Mc/s if amplifier in television receivers. Outline
No.27 (4-lead). Terminals: 1 - emitter, 2 - base, 3 - collector, 4 - connected
to case. This type is identical with type 40238 except for the following item:
CHARACTERISTICS
Static Forward-Current Transfer Ratio
(VCIll
6 V. IJll
-1 rnA) ................................................
=
40242
=
hFIll
27 to 275
TRANSISTOR
Si n-p-n planar type used in rf-amplifier applications in conjunction with
types 40243 (mixer), 40244 (rf oscillator), and 40245 and 40246 (if amplifiers) to make up a "front-end" and if complement for FM and AM/FM
receivers. Outline No.27 (4-lead). Terminals: 1 - emitter, 2 - base, 3 - collector, 4 - connected to case.
Technical Data for RCA Transistors
279
MAXIMUM RATINGS
Collector-to-Base Voltage:
Emitter open. ............................................................................
VBE == -1 V ............................................................................
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Transistor Dissipation:
TA up to 25'C ........................................................................
TA above 25'C ........................................................................
Temperature Range:
Operating (TA) and Storage (TsTG) ............................
L"~d-S"!d"~!~g '!'emperatm'e (10 n max) ........................
TYPICAL TRANSCONDUCTANCE AT 100 Mels
.....
1:1 u
...
~ ~
u
40
TYPE 40242
COMMON-EMITTER CIRCUIT, BASE INPUT.
FREE-AIR TEMPERATURE (TFA)= 25'C
20
FREQUENCY (f )=10 Mel.
EMITTER MILLIAMPERES (IE)= -1.5
o
§
'"
......::>
mA
180
mW
See curve page 112
'C
-65 to 175
255
Tr.
'C
40
~ ~~
~ ~~ 80
8
.. ",2
g~60
Igm
-40 ~ ~ e
It:: z~
1/
-80
g
2
4
6
8
10
12
COLLECTOR-TO-EMITTER VOLTS (VCE)
:~
il:
Z~
i!
b
~
..
%%8
r-_8
-40
C
~
::Ii
~ ~
-IOO!:!
I
§
-20
~
... !1l- 40
20
~
0
, .. 'fIo\
"-
e
It::
140 TYPE 40242
COMMON-EMITTER CIRCUIT,BASE INPUT.
::>
FREE-AIR TEMPERATURE (TFAl'2S'C
~ 120 FREQUENCY (f )"100 Mets
20
COLLECTOR-TO-EMITTER VOLTS
(VCE)·7.5
u
~~100
0
-20
-60 I!;
o
V
V
V
TYPICAL TRANSCONDUCTANCE AT 100 Me/s
Ilf
..J
ID
C
Ie
~
c cE::a::
o
35
35
5
50
VeBO
VeBV
VEBO
20
r7
!:l
92CS-12927T
TYPICAL INPUT CHARACTERISTICS AT 100 Mel.
TYPICAL OUTPUT CHARACTERISTICS
AT 100 Mels
10 I
TYPE 40242
;::.
::>
::>
COMMON-EMITTER CIRCUIT, BASE INPUT.
0
80 FREE-AIR TEMPERATURE ('rFA)z 25°C
8
~
FREQUENCY (f)o 100 Mc/$
010
00
6 ~:g
Zo 60 EMITTER MILLIAMPERES (Il)=iI.51
;:
100
§
c-K
f.-I--I--f·· . .
I-
!!?'"
"'::Ii 40
w:r
0: 0
I-
::>
"-
1-1-
..
20
COUT -
::>
o
FREQUENCY (f)-IOO Mels
. EMITTER MILLIAMPERES (IE)=-1.5
f.-+- 2 ~
I I
2
4
6
8
10
12
COLLECTOR-TO-EMITTER VOLTS (VCE)
o
..."-
5
92CS-I2928T
ii:
8
+- 4 ~§
~
g
~
j!!
0"-
I-
~
:
S
o
FR~JR TEMPERATURE (TFA)' 25"C
~~
E~
L
ROUT
I-
0
I I
TYPE 40242
COMMON-EMITTER CIRCUIT,BASE
f400 f-f-
~
~IN
RIN
~
I
2 i!:
200
0123456789101112
COLLECTOR-TO-EMITTER VOLTS WeE)
92CS-12920T
CHARACTERISTICS
Collector-to-Base Breakdown Voltage:
Ie == 0.001 mA, lJo == 0 ....................................................... .
Vml == -1 V, Ie == 0.001 mA .......................................... ..
Emitter-to-Base Breakdown Voltage
(lJo == -0.001 mA, Ie == 0) ............................................... .
Collector-Cutoff Current (Vet: = 1 V. lJo == 0) ........... .
Emitter-Cutoff Current (VEB = 5 V, Ie == 0) .............. ..
Static Forward-Current Transfer Ratio
(Vc>] = 6 V, lJo == -1 mAl ............................................... .
Extrinsic Transconductance (VCE == 7.5 V,
IE == -1.5 mA, f = 100 Mc/s) ...................................... ..
Maximum Available Amrlifier Gain'
(VCE == 7.5 V. I" = - .5 mAo f == 100 Mc/s) ............
Maximum Usable Amplifier Gain.:
Neutralized-VCl' = 7.5 V, IE == -1.5 mAo
f == 100 Me/s .............................................................. ..
Unneutralized-Vcc = 15 V. f = 100 Mc/s .............. ..
Input Capacitance (VCI< := 7.5 V, IE == -1.5 mA,
f == 100 Mc/s) ...................................................................... ..
Feedback Capacitance (VCE == 8 V. IE := O.
f == 1 Me/s) ............................................................................
V(BRlCBO
V(BRlCBV
35 min
35 min
V
V
V(BRlImO
ICBO
lEBO
3 min
0.02 max
1 max
/LA
/LA
hF"
40 to 170
V
45 mmhos
MAG
38.3
dB
MUG
21.5
16.4
dB
dB
MUG
Cle
5.2
pF
Cob
0.65 max
pF
280
RCA Transistor Manual
CHARACTERISTICS (cont'd)·
=
=
Input Resistance (VCE
7.5 V, IE
-1.5 mA,
t = 100 Mc/s) ........................................................................
Output Resistance (VeE
7.5 V, IE
-1.5 mA,
t = 100 Mc/s) ........................................................................
Output Capacitance (VeE = 7.5 V. IE = -1.5 mA,
t = 100 Mc/s) ........................................................................
Noise Figure* (Vee = 15 V, RG = 50 n, t = 100 Mc/s)
=
=
Ric
450
n
Roc
30
kn
Coe
NF
1.35
2.5
a~
* This characteristic applies only to type 40242.
40243
TRANSISTOR
Si n-p-n planar type used in mixer applications in conjunction with types
40242 (rf amplifier), 40244 (rf oscillator), and 40245 and 40246 (if amplifiers) to make up a "front-end" and if complement for FM and AM/FM
receivers. Outline No.27 (4-lead). Terminals: 1 - emitter, 2 - base, 3 - collector, 4 - case. This type is identical with type 40242 except for the following items:
MAXIMUM RATINGS
Emitter-to-Base Voltage
CHARACTERISTICS
VERO
=
=
Emitter-Cutoff Current (VEB
3 V. Ie
0) ................
Extrinsic Transconductance (VeE = 7.5 V.
IE = -1 mA, f = 100 Mc/s) ............................................
Maximum Available Conversion Gain
(VeE = 7.5 V. IE = -1 mA, f = 10.7 to 100 Mc/s)
Input Capacitance (VeE = 7.5 V. IE
-1 mA,
f = 100 Mc/s) ........................................................................
Input Resistance (VCE = 7.5 V, IE = -1 mAo
f = 100 Mc/s) ........................................................................
Output Resistance (VeE = 7.5 V. IE = -1 mA,
f = 100 Mc/s) ........................................................................
Output Capacitance (VeE = 7.5 V, IE = -1 mA,
f = 100 Mc/s) ........................................................................
=
40244
lEBO
gm
3
V
1 max
p,A
32 mmhos
37.64
dB
Clc
4.5
pF
Rio
650
n
Roe
30
kn
Coo
1.35
pF
MAGe
TRANSISTOR
Si n-p-n planar type used in rf-oscillator applications in conjunction with
types 40242 (rf amplifier), 40243 (mixer), and 40245 and 40246 (if amplifiers) to make up a "front-end" and if complement for FM and AM/FM
receivers. Outline No.27 (4-lead). Terminals: 1 - emitter, 2 - base, 3 - collector, 4 - connected to case.
MAXIMUM RATINGS
Collector-to-Base Voltage:
Emitter open ........................................................................... .
VBE = -1 V ........................................................................... .
Emitter-to-Base Voltage ..........................................................
Collector Current ....................................................................... .
Transistor Dissipation:
TA up to 25'C ....................................................................... .
TA above 25'C ........................................................................
Temperature Range:
Operating (TA) and Storage (TsTG) ............................
Lead-Soldering Temperature (10 s max) ....................... .
VCBO
VCEV
VEBO
Ic
PT
PT
35
35
3
50
V
V
V
mA
180
mW
See curve page 112
-65 to 175
255
·C
'C
V(BR)CBO
35 min
35 min
V
V
V(BR)EBO
3 min
0.02 max
1 max
V
p,A
p,A
TL
CHARACTER ISTICS
Collector-to-Base Breakdown Voltage:
Ie = 0.001 mA, IE
0 ....................................................... .
VBE
-1 V. Ic
0.001 mA ........................................... .
Emitter-to-Base Breakdown Voltage
(IE = -0.001 mAo Ic = 0) ............................................... .
Collector-Cutoff Current (VCE = 1 V. IE = 0) ........... .
Emitter-Cutoff Current (VEB
3 V. Ie
0) ................
=
==
=
=
V(BR)CBV
ICBo
lEBO
281
Technical Data for RCA Transistors
CHARACTERISTICS (cont'd)
Static Forward-Current Transfer Ratio
(VeE = 6 V, IE = -1 rnA) ................................................
Oscillator Output Voltage, Common Base Circuit
(Vee
6 V, Rr.
50 n, f = 120 Mc/s) ....................
Feedback Capacitance (VeE
8 V, IE = 0,
f
1 Mc/s) ............................................................................
=
=
=
=
hFE
27 to 170
Vob
55
Cob
0.8 max
mV
pF
40245
TRANSISTOR
Si n-p-n planar type used in if-amplifier applications in conjunction with
types 40242 (rf amplifier), 40243 (mixer), 40244 (rf oscillator), and 40246
(if amplifier) to make up ·a "front-end" and if complement for FM and
AM/FM receivers. Outline No.27 (4-lead). Terminals: 1 - emitter, 2 - base,
3 - collector, 4 - connected to case.
MAXIMUM RATINGS
Collector-to-Base Voltage:
Emitter open .......................................................................... ..
VBE = -1 v ............................................................................
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Transistor Dissipation:
TA up to 25"C ....................................................................... .
TA above 25"C ...................................................................... ..
Temperature Range:
Operating (TA) and Storage (TsTG) .......................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
Veno
VeEv
VEBO
Ie
PT
Pr
35
35
3
50
V
V
V
rnA
mW
180
See curve page 112
-65 to 175
255
"C
·C
V(BR)CBV
35 min
35 min
V
V
==
V(BR)EBO
leBo
lEBO
3 min
0.02 max
1 max
V
/LA
/LA
=
hFE
70 to 170
Cob
0.65 max
TL
CHARACTERISTICS
Collector-to-Base Breakdown Voltage:
Ie = 0.001 rnA, lID = 0 ...................................................... ..
VnE = -1 V, Ie
0.001 rnA .......................................... ..
Emitter-to-Base Breakdown Voltage
(IE = -0.001 rnA, Ie= 0) ............................................... .
Collector-Cutoff Current (VeE
1 V, IE
0) .............. ..
Emitter-Cutoff Current (VEn
3 V, Ie
0) ................
Static Forward-Current Transfer Ratio
(VeE = 6 V, IE = -1 rnA) .............................................. ..
Feedback Capacitance (VeE
8 V, IE
0,
f = 1 Mc/s) ...................................... ;................................... ..
Extrinsic Transconductance (VeE = 7.5 V,
IE = -2 rnA, f = 10.7 Mc/s) ...................................... ..
Maximum Available Amplifier Gain
(VeE = 7.5 V, Iro
-2 rnA, f = 10.7 Mc/s) .......... ..
Maximum Usable Amplifier Gain:
Neutralized-Vee
12 V, f = 10.7 Mc/s .................. ..
Unneutralized-VcE
7.5 V, IE = -2 rnA,
f = 10.7 Mc/s .......................................................... ..
=
==
=
=
==
V(BR)CBO
gm
MAG
51.4
dB
MUG
33.2
dB
MUG
28.1
dB
TYPICAL EXTRINSIC TRANSCONDUCTANCE
AT 10.7 Mell
~
~ 200
TYPE 40245
COMMON -EMITTER CIRCUIT, BASE INPUT.
FREE -AIR TEMPERATURE nFA)' 25°C
175 COLLECTOR-TO-EMITTER VOLTS (VCE)'7.5FREQUENCY If )'10.7 Me/s
!! 150
oJ
~
E
~
>!
i
125
u
II)
~
u
iii
;!!;
....'"
1:]
100
/
75
50
25
0
V
/
-I
/
/'
/
-2
-3
-4
-5
pF
70 mmhos
-6
EMITn:R MILLIAMPERES (IE)
92CS-12929T
282
RCA Transistor Manual
CHARACTERISTICS (cont'd)
=
=
=
=
Input Capacitance (VeE = 7.5 V. IE
-2 rnA.
f
10.7 Me/s) ...................................................•...•................
Input Resistance (VeE = 7.5 V. IE
-2 rnA.
f
10.7 Me/s) ........................................................................
Output Resistance (VeE = 7.5 V. IE
-2 rnA.
f
10.7 Me/s) ........................................................................
Output Capacitance (VeE = 7.5 V. IE
-2 rnA.
f
10.7 Me/s) ........................................................................
=
=
=
=
40246
CI.
8.2
RI.
1400
o
Ro.
80
kO
Co.
1.5
pF
pF
TRANSISTOR
Si n-p-n planar type used in if-amplifier applications in conjunction with
types 40242 (rf amplifier), 40243 (mixer), 40244 (if oscillator), and 40245
(if amplifier) to make up a "front-end" and if complement for FM and
AM/FM receivers. Outline No.27 (4-lead). Terminals: 1 - emitter, 2 - base,
3 - collector, 4 - connected to the case. This type is identical with type
40245 except for the following items:
CHARACTERISTICS
=
=
Input Resistance (YOlO = 7.5 V. IE
-2 rnA.
f
10.7 Me/s) ........................................................................
Output Resistance (VeE
7.5 V. IE
-2 rnA.
f
10.7 Me/s) ........................................................................
=
=
=
40250
RI.
1200
(1
Ro.
90
kO
POWER TRANSISTOR
Si n-p-n diffused-junction type used in audio and inverter circuits in 12-volt
mobile radio and portable communications equipment and in a wide variety
of intermediate- and high-power applications. JEDEC TO-66, Outline No.22.
Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and
case.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE
-1.5 V ....................................................................... .
Base open ................................................................................. .
Emitter-to-Base Voltage ...•....................................................
Collector Current ....................................................................... .
Base Current ............... ,............................................................... .
Transistor Dissipation:
Te up to 25°C ....................................................................... .
Te above 25°C ....................................................................... .
Temperature Range:
Operating (Junction) ........................................................... .
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ..........................
=
...
OJ
~240
~11:200
~u
,
~~¢-~
PT
PT
See curve page 112
29
W
TJ(opr)
TSTG
Tp
........
~+)
o
a: 40
Ie
V
V
V
A
A
1_1_~\"cl=2Soc
120 f - 80
In
5
4
2
I II
OJ
~
V
TYPE 40250
COLLECTOR-TO-EMITTERVOLTS (VCE)'4
...
l:l160
:.
l-
50
50
40
TYPICAL DC FORWARD-CURRENT
TRANSFER RATIO CHARACTERISTIC
II:
I-
VeBO
VCEV
VCEO
VERO
"1\
(/-
f--
f\
~
II:
~
g
0
0.001
2
4 68
0.01
2
4 68
2
4 68
2
4
to
0.1
COLLECTOR AMPERES (Ie)
92CS-l2564TI
-65 to 2 0 0 ° C
-65 to 200
'C
235°C
283
Technical Data for RCA Transistors
CHARACTERISTICS (At case temperature
= 2S0C)
Collector-to-Base Breakdown Voltage
(Ic = 0.05 A, IE = 0) ........................................................
Collector-to-Emitter Breakdown Voltage
(Ic = 0.05 A, VB!' = -1.5 V) ............................................
Collector-to-Emitter Sustaining Voltage
(Ic
0.1 A) ............................................................................
Emitter-to-Base Breakdown Voltage
(IE = 0.005 A, Ic = 0) ........................................................
Collector-to-Emitter Saturation Voltage
(Ic = 1.5 A, Is = 0.15 A) ................................................
Base-to-Emitter Voltage (VCE = 4 V, Ic
1.5 A) ........
Collector-Cutoff Current:
VCR = 30 V, IE = 0, Tc = 25·C ........................................
VCR
30 V, lE = 0, Te = 150·C ......................................
Emitter-Cutoff Current (VER = 5 V, Ie = 0) ................
Static Forward-Current Transfer Ratio
(VCE
4 V, Ie = 1.5 A) ....................................................
Thermal Resistance, Junction-to-Case ................................
=
=
=
=
V(BR)CBO
50 min
V
V(BR)CEV
50 min
V
VCEO(SUS)
40 min
V
V(BR)EBO
5 min
V
VCE (sat)
VBE
1.5 max
2.2 max
V
V
ICBO
leBo
lEBO
1 max
5 max
5 max
mA
mA
mA
hFE
8J-e
25 to 100
6* max
·C/W
* This value does not apply to type 40250V1.
TYPICAL TRANSFER CHARACTERISTICS
uz.s
TYPE 40250
COLLECTOR-EMITTER VOLTS (VCE) a 4
~I.
!:!
.,
OJ
i
~
§~ ;~ c.
J.rJ/
~
2
.. 1.5
iYl/
I
~
..J
80.5
o
~.
~I
0.5
1.5
2
2.5
BASE-TO-EMITTER VOLTS (VeE)
9ZCS-IU25T
402S0V1
TRANSISTOR
Si n-p-n diffused-junction type used in audio and inverter circuits in 12-volt
mobile radio and portable communications equipment and in a wide variety
of intermediate- and high-power applications. This type has an attached
heat radiator for mounting on printed-circuit-board applications. JEDEC
TO-66 (with heat radiator), Outline No.22. Terminals: 1 (B) - base, 2 (E) emitter, Mounting Flange - collector and case (with heat radiator). This
type is identical with type 40250 except for the following items:
MAXIMUM RATINGS
Transistor Dissipation:
TA up to 25·C ........................................................................
CHARACTERISTICS (At case temperature
Thermal Resistance. Junction-to-Ambient ......................
POWER TRANSISTOR
PT
5.8
W
30 max
·C/W
= 2S0C)
8J-A
40251
Si n-p-n diffused-junction type used in audio and inverter circuits in 12-volt
mobile radio and portable communications equipment and in a wide variety
of intermediate- and high-power applications. JEDEC TO-S, Outline No.2.
Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and
case.
284
RCA Transistor Manual
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-EIilitter VOltage:
VBm
-1.5 V ........................................................................
Base open ...................... ~ ........................................................
Emitter-to-Base Voltage ....................................................... .
Collector Current ........................................................................
Base Current ................................................................................
Transistor Dissipation:
Te up to 25"C ..........................................................:.............
Tc above 25°C ........................................................................
TeDlperature ~ge:
Operating (Junction) ........................................................... .
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) .....................•......
=
CHARACTERISTICS (At case temperature
VeBO
50
V
Velll'
VeEo
VIIIBO
Ie
IB
51
40
5
15
7
V
V
V
A
A
PT
PT
117
W
See curve page 112
-65 to 200
-65 to 200
235
·C
·C
·C
V(BR)CBO
50 Dlin
V
V(BRlCEV
50 Dlin
V
V(BR)EBO
5Dlin
V
TJ(opr)
Tsro
Tp
= 25°C)
Collector-to-Base Breakdown Voltage (Ie = 0.1 A.
=
IE
0)
......................................................................................
Collector-to-Emitter Breakdown Voltage (Ie = 0.1 A.
VBE = -1.5 V) ......................................................................
Emitter-to-Base Breakdown Voltage (IE
0.01 A.
Ie = 0) ......•......•...•...•.•....••........••....••••.•..•••••........•.••••...••••••..••..
Collector-to-Emitter Sustaining Voltage
(Ie = 0.2 A) ............................................................................
Collector-to-Emitter Saturation Voltage
(Ie
8 A. IB
0.8 A) ....................................................... .
Base-to-Emitter Voltage (VCE = 4 V. Ie = 8 A) ........
Collector-Cutoff Current:
VeE
30 V. VBE
-1.5 V. Te
25°C ........................
.VeE = 40 V. VBE
-1.5 V. Te = 150°C ..................... .
Emitter-Cutoff Current (VEB
5 V. Ie
0) ................
Static Forward-Current Transfer Ratio
(VeE = 4 V. Ie = 8 A) ......................................................
TherDlBl Resistance, Junction-to-Case ............................ ..
=
=
=
=
=
=
=
=
=
TYPICAL DC FORWARD - CURRENT
TRANSFER RATIO CHARACTERISTIC
~
: 80
V
V
ICEv
IeEv
lEBO
2DlaX
10DlaX
lOmax
DlA
DlA
DlA
hFE
9J-e
15 to 60
1.5 max
·C/W
40251
r!!"E.
COLLECTOR-TO-EMITTER WLTS ('tE)'4
I
I ~~~~~SOC
8
!.~~~
II:
lI-
-
0::
0::
'Y
~~~
6
"-
4-"'7
1'\
I
2
020
II:
~
0::
~
0
(,)
0.01
2
4
68
2
4
6 8
0.1
I
COLLECTOR AMPERES (I C)
2
~f
1/
/::'1
4 - !---;
'\
(,)
o
V
1.5 DlaX
2.2 Dl8X
II
~
:;: 60
::>
40 Dlin
VeE (sat)
VBE
TYPICAL TRANSFER CHARACTERISTICS
TYPE 40251
COLLECTOR-TO-EMITTER VOLTS (VCE)- 4
II:
UJ
~ 40
VeEo(sus)
4
68
,/'
r
,I
lil/
l,j
00.511.522.53
BASE-TO-EMITTER IIOU'S (VBEI
92CS-lunn
10
92CS-12565TI
40253
TRANSISTOR
Ge p-n-p alloy-junction type used in class B audio amplifier applications
in consumer product and industrial equipment. JEDEC TO-l, Outline No.1.
Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage .................................................... ..
Collector-to-Emitter Voltage ................................................ ..
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Emitter Current ...................................................................... ..
Base Current ................................................................................
VeBo
VeEo
VEBO
Ie
IE
IB
-25
-25
-2.5
-500
500
-100
V
V
V
DlA
DlA
DlA
285
Technical Data for RCA Transistors
MAXIMUM RATINGS (cont'd)
Transistor Dissipation:
TA up to 55·C ....................................................................... .
TA above 55·C ...................................................................... ..
Te up to 64·C ........................................................................
Te above 64·C ...................................................................... ..
Temperature Range:
Operating (Junction) ..........................................................
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
PT
125
roW
PT
See curve page 112
PT
650
roW
PT Derate linearly 25 mW/"C
=
=
=
==
-65 to 90
-65 to 90
255
·C
·C
·C
V
= 25°C)
CHARACTERISTICS (At case temperature
Collector-to-Base Breakdown Voltage
(Ie = -0.05 rnA. IE
0) .................................................. ..
Collector-to-Emitter Breakdown Voltage
(Ic
-2 rnA. Is = 0) ........................................................
Emitter-to-Base Breakdown Voltage
coli:c~r.:tg~~i:re~· J~t~a~OIi .. ·v~i~g;;·· .. ·· .. ···· .. ·..·· ..····· ....
(Ie
-400 rnA. IB
-20 rnA) ....................................
Base-to-Emitter Voltage:
VCE = -10 V. Ic
-5 rnA ................................................
VeE = -1 V. Ie
-400 rnA ............................................
Collector-Cutoff Current (VCB = -12 V. IE
0) ........
Emitter-Cutoff Current (VEB = 2.5 V. Ie = 0) ............
Static Forward-Current Transfer Ratio
(VCE = -1 V. Ie = -400 rnA) ........................................
Gain-Bandwidth Product ....................................................... .
Thermal Resistance. Junction-to-Case
(Tc = 64·C) ............................................................................
=
TJ(opr)
TSTo
TL
V(BR)eBO
-25 min
V(BR)eEO
-25 min
V
VCBR)EBO
-2.5 min
V
-0.5
V
-0.15
-0.45
-14 max
-14 max
p.A
p.A
VeE (sat)
VBE
VBE
leBo
lEBO
=
V
V
hFE
iT
50 min
1
Mcls
9J-e
40 max
·C/W
TYPICAL COLLECTOR CHARACTERISTICS
TYPE 40253
COMMON-EMITTER CIRCUIT!;BASE ·INPUT.
CASE TEMPERATURE (Tcl-2 •
~
L6.5
::: -500
I
c::; ~ --: -::: f.- 5.5-5_
'"~
:::;
......
....
i -500
~-400
-6
4 •5
~:...4!.3.5
_
-3
-2.5
-2
'"ot; -200
.
::l
8
:l'.5
-I
-u.S
-100
. BASE
o
-I
MILLIAM~ERES(lal-O
- - - - - -
-2-3-456789
COLLECTOR-TO-EMITTER VOLTS (VCEI
10
92CM-12594T
TYPICAL TRANSFER CHARACTERISTICS
TYPE 40253
COMMON-EMITTER CIRCUIT. BASE INPUT. _
u
2
CASE TEMPERATURE (TCI=25" C
t:!-IOOo"
If>
6 r-COLLECTOR-TO-EMITTER VOLTS (V:E)=-I
I :
3
,......
I
2
-100
2
I
2
~ 150
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTIC
TYPE 40253
COMMON-EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE (TCI=25"C
- -....
).
....
//
'/
"'-
~120
~
YIIO
,
Q
//
-0.1
.
z
/'
-I
4
hi
!
0160
!i
"'150
'"
1:;140
-0.2
-0.5
-0.4
-0.5
BASE-TO-EMITTER VOLTS (VSE)
92CS-12590T
i
lOO
u
90
0
'"
It
Q
-100
-200
"'" "
-500
-400
COLLECTOR MILLIAMPERES (Ie)
92CS-12592T
286
RCA Transistor Manual
40254
POWER TRANSISTOR
Ge p-n-p alloy type for class A af power-amplifier service in driver- and
output-stage applications. JEDEC TO-3, Outline No.2. Terminals: 1 (B) base, 2 (E) - emitter, Mounting Flange - collector and case. This type is
identical with type 40022 except for the following items:
CHARACTERISTICS (At mounting-flange temperature
=
Collector-Cutoff Current (VeB
-30 V. IE = 0) ........
Collector-Cutoff Saturation Current
(VeB = -0.5 V. IE = 0) ....................................................
= 25°C)
leBo
leBo (sat)
-3 max
rnA
-0.16 max
rnA
-16
-13.2
-0.9
V
V
A
A
TYPICAL OPERATION IN CLASS A AF-AMPLIFIER CIRCUIT
DC Collector-Supply Voltage .............................................. ..
DC Collector-to-Emitter Voltage ....................................... .
DC Collector Current ............................................................... .
Peak Collector Current ............................................................
Input Impedance ....................................................................... .
Collector Load Impedance ....:...............................................
Maximum Collector Dissipation ........................................... .
Power Gain ................................................................................... .
Total Harmonic Distortion (POB
5 W) ....................... .
Maximum-Signal Power Output ........................................
=
40255
Vee
VeE
Ie
ie(peak)
Rs
Rr.
GPB
POE
-1.8
15
15
12
36
5
5
n
n
W
dB
%
W
TRANSISTOR
Si n-p-n triple-diffused type used in switching and linear amplifiers, differential and operational amplifiers, high-voltage inverters, and series regulators for industrial and military applications. JEDEC TO-5 (with flange),
Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case (with
flange). This type is identical with type 2N3439 except for the following
items:
MAXIMUM RATINGS
Transistor Disswation
Te up to 50 C ........................................................................
PT
10
W
15max
·C/W
CHARACTERISTICS
Thermal Resistance. Junction-to-Case
(POA
2 to " W. IE
100 rnA) ....................................
=
=
40256
8,-e
TRANSISTOR
Si n-p-n triple-diffused type used in switching and linear amplifiers, differential and operational amplifiers, high-voltage inverters, and series regulators for industrial and military applications. JEDEC TO-5 (with flange),
Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case (with
flange). This type is identical with type 2N3440 except for the following
items:
MAXIMUM RATINGS
Transistor Disswation:
Te up to 50 C ........................................................................
PT
10
W
15 max
·C/W
CHARACTERISTICS
Thermal Resistance. Junction-to-Case
(Poe
2 to " W. IE
100 rnA) ....................................
=
40261
=
8,-e
TRANSISTOR
Ge p-n-p drift-field type used in converter service in conjunction with types
40262 (if amplifier), 40263 (af amplifier and driver), 40264 (power output),
and 40265 (line rectifier) to provide a complement for line-operated AM
287
Technical Data for RCA Transistors
broadcast-band receivers and phonographs in entertainment equipment.
JEDEC TO-I, Outline No.!. Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage:
Emitter open ........................................................................... .
VBE = 0.5 V, Ie = -50 p.A ............................................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Emitter Current ..........................................................................
Transistor Dissipation:
TA up to 25·C ...................•....................................................
TA above 25·C ........................................................................
Temperature Range:
Operating (TA) and Storage (TsTG) ........................... .
Lead-Soldering Temperature (10 s max) ...................... ..
-34
-50
-0.5
-10
10
VCBO
VCBV
VEBO
Ie
I"
V
V
V
rnA
rnA
PT
mW
80
See Rating Chart
TL
-65 to 85
255
·C
·C
-50
-34
V
V
-0.5 min
-12 max
-12 max
p.A
/LA
I'bb'
25
n
h,.
fT
27 to 170
40
Mc/s
3.7 max
pF
CHARACTERISTICS
Collector-to-Base Breakdown Voltage:
Ie = -0.05 rnA, IE
0 ...................................................... ..
VBE = 0.5 V, Ie = -0.05 rnA ............................................
Emitter-to-Base Breakdown Voltage
(IE = -0.012 rnA, 10
0) .............................................. ..
Collector-Cutoff Current (VeB
-12 V, IE
0) ........
Emitter-Cutoff Current (VEB = 0.5 V. Ie = 0)
Intrinsic Base-Spreading Resistance
(VOE = -12 V, 10
-1 rnA, f = 100 Mc/s) .......... ..
Small-Signal Forward-Current Transfer Ratio
(VOE
-6 V, 10
-1 rnA. f = 1 kc/s) .................. ..
Gain-Bandwidth Product (VeE
-12 V. 10 = -1 mAl
Output Capa,citance
(VCB
-12 V, IE
0, f
1.5 Mc/s) ...................... ..
=
=
=
=
=
=
=
=
=
=
=
Vcso
VCBV
~T(BB)EBO
lOBo
lEBO
Cobo
V
TYPICAL TRANSFER CHARACTERISTIC
TYPE 40261
-7 COLLECTOR-TO-EMITTER VOLTS
(VCE)= -6
FREE-AIR TEMPERATURE (TFAI=25°C
RATING CHART
'"~ 150
TYPE 40261
0-6
!:!
~~
t; :1125
u;~
~
1100
1-;:'
~~ 75
"-
::oz
~H~ 50
::0
it
::i
is
25
o
-75 -50 -25
0
25
50
/
"\
1\
75
II
I
100
-V
FREE-AIR TEMPERATURE (TFA)-OC
92CS-1271BT
o
-50 -100 -150 -200 -250
BASE-TO-EMITTER MILLIVOLTS (YaEl
92CS-I0679TI
40262
TRANSISTOR
Ge p-n-p drift-field type used in if-amplifier service in conjunction with
types 40261 (converter), 40263 (af amplifier and driver), 40264 (power output), and 40265 (line rectifier) to provide a complement for line-operated
AM broadcast-band receivers and phonographs in entertainment equipment. JEDEC TO-I, Outline No.1. Terminals: 1 - emitter, 2 - base, 3 - collector. This type is identical with type 40261 except for the following items:
CHARACTERISTICS
Small-Signal Forward-Current Transfer Ratio
(VCE
-6 V. Ie
-1 rnA. f
1 kc/s) ....................
Gain-Bandwidth Product (VCE
-12 V. Ie
-1 rnA)
Output Capacitance (VCB = -12 V.
IJa
0, f
1.5 Me/s) ........................................................
=
=
=
=
==
=
hte
fT
Cobo
82 to 350
30
Mc/s
3.4max
pF
288
RCA Transistor Manual
40263
TRANSISTOR
Ge p-n-p alloy-junction type used in low-level af-amplifier and driver service
in conjunction with types 40261 (converter), 40262 (if amplifier), 40264
(power output), and 40265 (line rectifier) to provide a complement for lineoperated AM broadcast-band receivers and phonographs in entertainment
equipment. JEDEC TO-I, Outline No.1. Terminals: 1 - emitter, 2 - base,
3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage (RRE
10 kCl) ........... .
Emitter-to-Base Voltage ..........................................................
Collector Current ....................................................................... .
Emitter Current ......................................................................... .
Transistor Dissipation:
TA up to 55°C ....................................................................... .
TA above 55°C ....................................................................... .
Temperature Range:
Operating (TA-Tc) and Storage (TSTG) ................... .
Lead-Soldering Temperature (10 s max) ....................... .
=
-20
-18
-2.5
-50
50
VCRO
VCER
VER
Ic
IE
PT
PT
V
V
V
rnA
mA
mW
120
See curve page 112
-65 to 100
255
°C
°C
V(BR)CER
18 min
V
V(BR)EBO
-2.5 min
-12 max
-12 max
V
/LA
/LA
fhfb
10
Me/s
hie
100 to 325
rbb'
200
Tr.
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage
(Ie
-1 rnA. RRE = 10 kO) ........................................... .
Emitter-to-Base Breakdown Voltage
(IE
-0.05 rnA. Ie
0) ................................................... .
Collector-Cutoff Current (VCR
-20 V. IE
0) ....... .
Emitter-Cutoff Current (VER
2.5 V. Ie = 0) ........... .
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VCE
-6 V.Ic
-1 rnA) ................... .
Small-Signal Forward-Current Transfer Ratio
(VCE
-6 V. Ic
-1 mAo f
1
kc/s) .............. .
Intrinsic Base-Spreading Resistance (VCE
-6 V.
Ie
-1 rnA. f
100 Mcjs) .............................................. ..
=
=
=
=
=
=
=
=
40264
==
=
=
=
=
ICRo
lEBO
0
POWER TRANSISTOR
Si n-p-n diffused-junction type used in class A output-amplifier service in
conjunction with types 40261 (converter), 40262 (if amplifier), 40263 (af
amplifier and driver), and 40265 (line rectifier) to provide a complement
for line-operated AM broadcast-band. receivers and phonographs in entertainment equipment. Outline No.28. Terminals: 1 - emitter, 2 - base, 3 - collector and mounting flange.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage
(Ic
1 mAo lB
5/LA) ................................................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Emitter Current ......................................................................... .
Transistor Dissipation:
TMF up to 70°C ................................................................... .
TMF above 70°C ................................................................... .
Temperature Range:
Operating (TA-TMF) and Storage (TSTG) ................... .
Lead-Soldering Temperature (lO.s max) ....................... .
=
=
VeRO
300
V
VCEX
VERO
Ic
IE
300
3
100
-100
V
V
mA
mA
PT
PT
4
W
Derate linearly 0.05 wrC
TL
-65 to 150
255
°C
°C
CHARACTERISTICS (At mounting-flange temperature = 25°C)
Collector-to-Base Breakdown Voltage
(Ic = 0.1 rnA. IE
0) ................................•.......................
Collector-to-Emitter Breakdown Voltage
(Ie
1 mA. lB =.0.005 mAl ............................................
Emitter-to-Base Breakdown Voltage
(IE = 0.1 rnA. Ie
0) ........................................................
=
=
=
V(BR)CRO
300 min
V(BR)CEX
300 min
V
V(RR)ERO
3 min
V
V
289
Technical Data for RCA Transistors
CHARACTERISTICS (cant'd)
Collector-Cutoff Current:
VeB = 300 V. IE = 0 ........................................................... .
VeE
300 V. lB
0.005 rnA ............................................
Static Forward-Current Transfer Ratio
(VeE = 10 V. Ie = 50 rnA) ................................................
Intrinsic Base-Spreading Resistance
(VeE
50 V. 10
20 rnA. f
100 Mc/s) .................. ..
Gain-Bandwidth Product (VeE
50 V. Ie
20 rnA)
Output Capacitance (VCB
50 V. IE
0) .................. ..
Thermal Resistance. Junction-to-Mounting Flange
=
=
=
=
=
=
=
=
=
leBO
IcEX
100 max
1 max
h"E
30 to 150
rbb'
20
25
5
20 max
fT
Cobo
eJ-:~u.l·
-
4 TYPE 40264
~1OO~;.r;~~~~~¥~=i=\
'0
~
~ ~~~~~~~t-
III
UJ
0::
UJ
c
::I;
!
-
o
8
6
0.4
O.
g
trl
..J
1ICS~I27IIT
/
2
/
10
••
4
\3
50
100 I!iO 200 250 300
aJLLECTOR-TO-EMITTER \Q.TS IIo\::EI
/'
4
:e
0::
(TMF1=25° C
100
:3'"
BASE MILLIAMPERES
~~~~~~E_~~~~~EC~i~~~:rS~R~NPUT._
2
t:!
Q.
o.
n
Mc/s
pF
°C/W
TYPICAL TRANSFER CHARACTERISTIC
TYPICAL COl.l.ECTOR CHARACTERISTICS
:360111'-:::;......e":"
:e
}LA
}LA
2
I
V
0.58
L
/
0.62
0.66
0.70
0.74
0.78
BASE-TO- EMITTER VOLTS (VBE)
92CS-12723T
40269
COMPUTER TRANSISTOR
Ge p-n-p alloy-junction type used in medium-speed switching applications
in industrial and military data-processing equipment. JEDEC TO-5, Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage (VBE = 1 V) ......................... .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ...................................................................... ..
Emitter Current ........................................................................ ..
Transistor Dissipation:
T ... up to 25°C ....................................................................... .
TA above 25·C ....................................................................... .
Temperature Range:
Operating (Junction) .......................................................... ..
Storage ...................................................................................... ..
Lead-Soldering Temperature (10 s max) ...................... ..
VeBV
VEBO
Ie
IE
PT
PT
TJ(opr)
TSTG
TL
-25
-12
-100
100
V
V
rnA
rnA
mW
150
See curve page 112
-65 to 85
-65 to 100
230
·C
·C
·C
CHARACTERISTICS
Collector-to-Base Breakdown Voltage
(Ie
-0.02 rnA. VBE
1 V) ........................................ ..
Emitter-to-Base Breakdown Voltage
(IE = -0.02 rnA. Ie = 0) .................................................. ..
Base-to-Emitter Saturation Voltage:
Ie
-12 rnA. lB
-0.4 rnA ........................................ ..
Ie
-24 rnA. lB
-1 rnA ................................................
Collector-to-Emitter Saturation Voltage
(Ie = -24 rnA. lB = -1 rnA) ........................................
Collector-Cutoff Current:
VeB
-12 V. lE
O. TA
25·C .................................. ..
VeB
~12 V. IE
O. TA
80·C .................................. ..
Emitter-Cutoff Current (VEB = -2.5 V. Ie = 0) ........... .
Static Forward-Current Transfer Ratio
(VeE = -0.15 V. Ie = -12 rnA) ....................................
Small-Signal Forward-Current Transfer-Ratio Cutoff
Frequency (VeB = -6 V. Ie = -1 rnA) .................. ..
Collector-to-Case Capacitance
(VeB = -6 V. Ie = 0) ........................................................
Stored Base Charge (Ie = -10 rnA. b = -1 rnA) .. ..
=
=
=
=
=
=
==
=
=
=
=
V(BR)eBV
-25 min
V
V(BR)EBO
-12 min
V
VBE(sat)
VBE (sat)
-0.35 max
-0.4 max
V
V
VeE (sat)
-0.2 max
V
leBO
leBO
lEBO
-5 max
-90 max
-2.5 max
}LA
p.A
}LA
hFE
50 to 200
f.f.
4 min
Mc/s
20
1200 max
pF
pC
Cc
Q.
RCA Transistor Manual
290
TYPICAL DC FORWARD-CURRENT
TRANSFER-RATIO CHARACTERISTIC
TYPICAL COLLECTOR-CUTOFF
CURRENT CHARACTERISTICS
'i?140 TYPE 40~69
to
COMMON-EMITTER CIRCUIT. BASE INPUT.
o
COLLECTOR -TO-EMITTER VOLTS
120
(VCEI=-O.lS
a::
FREE-AIR TEMPERATURE (TFAI=2S'C
CD
u
!i
!:i
15100
"-
'"lE
~
~ 80
...
...
~ 60
a::
~
y 40
TYPE 40269
6 COLLECTOR-TO-BASE VOLTS (VCBI=-12.5
: EMITTER OPEN.
'0- 1000
fla::
-100
6
•
Q.
6
4
2--·-
~
~
I
~K b:,~';:'~V
• ,-
!if
~
u
a -0.0 ~v
~ 20
~
a
-0.6
...J
u
-120
-20COLLECTOR
-40 -60MILLIAMPERES
-80 -100 (Iel
0
~Il"'./
~,,~
~r=- ~~~
:::>
V
o
V/.
-10
'"u~
............
./ //
2
g
V- I-... ...........
-50
./ V
V/
./
Id.,~~
-25
0
25
50
75
100
FREE-AIR TEMPERATURE (TFAI-"C
92CS·I08B5T2
12CS-12900T
40279
-
TRANSISTOR
Si n-p-n "overlay" epitaxial planar type used in ultra-high-reliability vhfuhf applications in space, military, and industrial communications equipment. Used in class A, B, and C amplifiers, frequency multipliers, or
oscillators. This device is subjected to special preconditioning tests for selection in high-reliability, large-signal, and high-power applications. JEDEC
TO-60, Outline No.20. Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Base Voltage ....................................................... .
Collector-to-Emitter Voltage:
VBE
-1.5 V ....................................................................... .
Base open ................................................................................. .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Transistor Dissipation:
Te up to 25°C ....................................................................... .
Te above 25°C ........................................................................
Temperature Range:
Operating (Junction) ........................................................... .
Storage ........................................................................................
Pin-Soldering Temperature (10 s max) ........................... .
=
CHARACTERISTICS (At case temperatore
=
=
=
=
=
65
V
VCEV
VCEO
Ic
65
40
4
1.5
V
V
V
A
PT
PT
11.6
W
See curve page 112
VEBO
TJ(opr)
-65 to 200
-65 to 200
230
°C
°C
°C
VT
TRANSISTOR
o
25
50
75
100
125
COLLECTOR MILLIAMPERES (IC)
150
92CS-12895T
40281
Si n-p-n "overlay" epitaxial planar type used in vhf class C amplifier service
requiring low supply voltages and high power output in industrial and military communications equipment. JEDEC TO-60, Outline No.20. Terminals:
292
RCA Transistor Manual
1 - emitter and case, 2 - base, 3 - collector. This type is identical with type
40280 except for the following items:
MAXIMUM RATINGS
Collector Current ................ .... .................... ................................
Transistor Dissipation:
To up to 25°C .................. ~....................................................
CHARACTERISTICS (At case temperature
=
Ie
PT
= =
~
TYPE 40281
COMMON-EMITTER CIRCUIT, BASE INPUT.
COLLECTOR-TO-EMITTER VOLTS- f-(VcEI=I3.5
CASE TEMPERATURE ITCI= 25" C
FREQUENCY (fIa 175 Mell
,. Vr"'"
o
~
I
3
4
7
0
4tmin
15 max
W
·C/W
Re (hie)
POE
eJ-O
cent.
TYPE 40281
COMMON-EMITTER CIRCUIT. BASE INPUT.
....
~
!;
/'
o 15
ffi
~ 10
5
pF
pF
!;
CASE TEMPERATURE (tcl=2So C ,
I
g2S FREQUENCY (fl=SO Mel.
.1, ftl
40282
~20
::: S
2
Mc/s
.L30 COLLECTOR-TO-EMITTER VOLTS (VCEI=13.5 -
....::
/
Cobo
Cc
TYPICAL RF POWER-OUTPUT
CHARACTERISTICS
II>
I: 35
400
22 max
5 max
fT
=
TYPICAL RF POWER-OUTPUT
CHARACTERISTICS
A
W
= 25°C)
Gain-Bandwidth Product (VOE
13.5 V, 10 = 400 rnA)
Output Capacitance (VCB = 13.5 V. IE = O.
f = 1 Mc/s) ............................................................................
Collector-to-Case Capacitance ..............................................
Input Resistance. Real Part (VeE = 13.5 V.
Ie = 400 mA, f = 175 Mc/s) ............................................
Power Output. Class C Amplifier. Unneutralized
(VeE
13.5 V. Pm
1 W, f
175 Mc/s.
RG & RL
50 0) ........................................................
Thermal Resistance. Junction-to-Case ..............................
t For conditions given. minimum efficiency = 70 per
=
1
11.6
7
/'
I
o
6
.-t!-
..-
RF POWER INPUT (PINI-WATTS
0.5
I
1.5
RF POWER INPUT (PIN)-WATTS
2
12CS-12889f
92CS-1288&T
40282
TRANSISTOR
Si n-p-n "overlay" epitaxial planar type used in vhf class C amplifier service
requiring low supply voltages and high power output in industrial and military communications equipment. JEDEC TO-60, Outline No.20. Terminals:
1 - emitter and case, 2 - base, 3 - collector. This type is identical with type
40280 except for the following items:
MAXIMUM RATINGS
Collector Current .......................................................................•
Transistor Dissipation:
To up to 25°C ........................................................................
CHARACTERISTICS (At case temperature
=
=
=
=
=
2
A
23.2
W
V(BB)CBO
36 min
V
V(BB) lOBO
ICEO
4 min
250 max
350
Mc/s
45 max
5 max
pF
pF
5
0
12tmin
7.5 max
W
°C/W
PT
= 25°C)
Collector-to-Base Breakdown Voltage
(10 = 0.5 mAo IE
0) ...................................................... ..
Emitter-to-Base Breakdown Voltage
(IE
0.25 mAo Ie
0) ........................................................
Collector-Cutoff current (VOE
15 V. IB
0) ........... .
Gain-Bandwidth Product (VCE
13.5 V. Ic
800 rnA)
Output Capacitance (VeB = 13.5 V. IE = 0,
f
1 Mc/s) ........................................................................... .
Collector-to-Case Capacitance ............................................. .
=
Ic
==
Inf~~R:3Ast;:,~.e·f ~af7r~/!r~~ ...~ ...~.~:.~ .. ~:.................. .
Power Output, Class C Amplifier. Unneutralized
(VeE = 13.5 V, PIE = 4 W. f = 175 Mc/s,
RG & RL = 50 0) ....................................................................
Thermal Resistance. Junction-to-Case ............................ ..
t For conditions given, minimum efficiency
80 per
=
fT
Cobo
Cc
Re(hle)
POE
eJ--CEV
65 min
V
V(BR)EBO
4 min
V
VCE(sat)
ICEO
1 max
0.25 max
V
p.A
TJ(opr)
TSTG
Tp
= 25°C)
Collector-to-Base Breakdown Voltage
(Ie:;:: 0.5 rnA. IE :;:: 0) ...................................................... ..
Collector-to-Emitter Breakdown Voltage:
Ie :;:: 0 to 200 rnA. In :;:: O. pulsed through
inductor L :;:: 25 mHo df :;:: 50% .......................... ..
Ie :;:: 0 to 200 rnA. VBE :;:: -1.5 V. pulsed
through inductor L :;:: 25 mHo df :;:: 50% ........
Emitter-to-Base Breakdown Voltage
(IE :;:: 0.25 rnA. Ie :;:: 0) ...................................................... ..
Collector-to-Emitter Saturation Voltage
(Ie :;:: 500 rnA. lB :;:: 100 rnA) ........................................
Collector-Cutoff Current (VCE :;:: 30 V. In :;:: 0) .......... ..
Static Forward-Current Transfer Ratio
(VeE:;:: 5 V. Ie :;:: 200 rnA) ................................................
Output Capacitance' (VCB :;:: 30 V. IE :;:: O.
f :;:: 1 Mc/s) ........................................................................... .
RF Power Output. Amplifier. Unneutralized:
(VCE :;:: 28 V. PIE :;:: 0.35 W. f :;:: 175 Mc/s.
RG & RL
50 0) ................................................................
=
VeRO
V(BR)C'BO
hFE
10 min
Cobo
20 max
pF
13.5t min
W
POE
t For conditions given. minimum efficiency :;:: 70 per cent.
297
Technical Data for RCA Transistors
40309·
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier driver stages for economical highquality performance. Designed to assure freedom from second breakdown in
the operating region. JEDEC TO-5, Outline No.3. Terminals: 1 i' emitter,
2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Eniitter Sustaining Voltage ......................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Base Current ............................................................................... .
Transistor Dissipation:
T ... up to 25·C ........................................................................... .
Te up to 25·C ........................................................................... .
TA and Te above 25·C ....................................................... .
Temperature Range:
Operating (Junction) ........................................................... .
CHARACTERISTICS (At case temperature
=
=
=
=
==
=
=
TYPICAL COLLECTOR CHARACTERISTICS
_ ~0r.T~Y=PE~4=0=30~9~~--~--~--~---,
::t
;;;500
FREE-AIR TEMPERATURE (TFA) " 25"
",,,,
,'I.
~
~400r-~--~~~~~,-_8~--+---1
~
1
W
5
W
See curve page 112
PT
PT
PT
-65 to 200
·C
18 min
1 max
V
V
leBO
0.25 max
1 max
1 max
rnA
rnA
hFE
70 to 350
100
35 max
175 max
Mc/s
·C/W
·C/W
TJ(opr)
V(BR)CEO
VBE
leBO
lEBO
fT
8J-e
8J-A
6
i3300L-~~~::~::~~;4~--t---1
I
~ 500
UJ
II:
UJ
..'"
TYPE 40309·
COLLECTOR-TO-EMITTER VOLTS (VCE)"10
:J
JJ.
{/7 .v--
~ ~
300
~~
~.y
...J
i
a: 200
~;~
~l/'
....0
...J
...J
-
l
'11-r--I
400
a.
[;l
100
t1
f~~
0
U
o
246
8
~
~
COLLECTOR-TO-EMMITER VOLTS (VCE)
p.A
TYPICAL TRANSFER CHARACTERISTICS
U)
UJ
V
V
A
A
= 25°C)
Collector-to-Eniitter Breakdown Voltage
(Ie
100 rnA, Is
0, t p
300 /.LS, df ~ 2%) ........... .
Base-to-Emitter Voltage (VeE
4 V, Ie
50 rnA) ... .
Collector-Cutoff Current:
VCB
15 V, lE
0, Te = 25·C ...................................... ..
VeB = 15 V, IE
0, Te
150·C ..................................... .
Eniitter-Cutoff Current (VEB = 2.5 V, Ie = 0) ........... .
Static Forward-Current Transfer Ratio
(VeE = 4 V, Ie = 50 rnA) .............................................. ..
Gain-Bandwidth Product (VeE = 10 V, Ie = 50 rnA)
Thermal Resistance, Junction-to-Case ............................ ..
Thermal Resistance, Junction-to-Ambient .................... ..
=
18
2.5
0.7
0.2
VCI'O(SUS)
VEBO
Ie
Is
0.2
0.4
0.6
0.8
1.0
1.2
BASE-TO-EMITTER VOLTS (VBE)
~
1.4
92CS-1232BT
92CS-12327T
40310
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier driver stages for economical highquality performance. Designed to assure freedom from second breakdown in
the operating region. JEDEC TO-66, Outline No.22. Terminals: 1 (B) - base,
2 (E) - emitter, Mounting Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Ernitter Sustaining Voltage ........................... .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ....................................................................... .
Base Current ............................................................................... .
Transistor Dissipation:
Te up to 25"C ...................................................................... ..
Te above 25"C ...................................................................... ..
Temperature Range:
Operating (Junction) .......................................................... ..
VeEO(sus)
VEBO
Ie
IB
PT
PT
TJ(opr)
35
2.5
4
2
V
V
A
A
29
W
See curve page 112
-65 to.200
"C
298
RCA Transistor Manual
CHARACTERISTICS (At case temperature: 25°C)
Collector-to-Emitter Breakdown Voltage
(Ie
100 rnA. IB
0) ........................................................
Base-to-Emitter Voltage (VeE = 2 V. Ie
1 A) ........
Collector-Cutoff Current:
VeB
15 V. IE
O. Te
25'C ........................................
VeB = 15 V. IE
O. Te = 150'C ......................................
Emitter-Cutoff Current (VEB = 2.5 V. Ie
0) ........... .
Static Forward-Current Transfer Ratio
(VeE
2 V. Ie = 1 A) ........................................................
Gain-Bandwidth Product (VeE
4 V. Ie
500 rna)
Thermal Resistance. Junction-to-Case ............................... .
=
=
=
=
=
=
=
=
=
=
=
TYPICAL COLLECTO!! CHARACTERISTICS
3
3.0
'0 2.5
t!
fa 2.0
It:
~
:I
TYPE 40310
CASE TEMPERATURE (TC)=25"C
~J
F
::!
~
0
25
1.5
~
BASE MILLIAMPERES (rBI=lu
leBO
leBO
lEBO
lOmax
5rnax
5 max
mA
rnA
20 to 120
750
6 max
kc/s
'C/W
TYPICAL TRANSFER CHARACTERISTICS
.~~ I~
1
2
!2.5
r---"-«l
60
2.5
4
2
29
W
See curve page 112
PT
PT
.,!:!
20 15
g
VeER (sus)
VeBo
Ie
IB
!
00.5
11.522.5
BASE-TO-EMITTER VOLTS (VeE'
92CS-1232~T
92CS"1309JT
40313
POWER TRANSISTOR
Si n-p-n high-voltage type for direct 117 -volt line operation in audioamplifier output stages for economical high-quality performance. Designed
to assure freedom from second breakdown in the operating region. JEDEC
TO-66, Outline No.22. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage
(RBE = 500 0) ........................................................................
Emitter-to-Base Voltage ........................................................ ..
Collector Current ...................................................................... ..
Base Current .............................................................................. ..
Transistor Dissipation:
To up to 25'C ........................................................................
Te above 25'C ........................................................................
Te = 175'C ............................................................................
Temperature Range:
Operating (Junction) ..........................................................
CHARACTERISTICS (At case temperature
=
=
300
2.5
2
1
V
V
A
A
PT
PT
PT
35
W
See Rating Chart
5
W
TJ(opr)
-65 to 200
·C
300 min
1.5 max:
V
V
= 25°C)
Collector-to-Emitter Sustaining Voltage
(Ie
200 rnA, RBE = 500 0) ............................................
Base-to-Emitter Voltage (VCE
10 V, Ic
0.1 A)....
=
VCER(SUS)
VEBO
Ie
lB
VeEB(sus)
VBE
300
RCA Transistor Manual
CHARACTERISTICS (cont'd)
Collector-Cutoff Current:
VeE
150 V, IB
0 ............................................................
VeE
300 V, VBE
-I.S V, Te
2S·C ......................
VeE
300 V, VBE
-I.S V, Te
lS0·C .................. ..
Emitter-Cutoff Current (VEB
2.S V, Ie
0) ............
Static Forward-Current Transfer Ratio:
VeE = 10 V, Ie = 100 mA ............................................... .
VeE == 10 V, Ie
SOO mA .............................................. ..
Second-Breakdown Collector Current (VeE
lS0 V)
Thennal Resistance, Junction-to-Case ..............................
=
=
=
==
=
=
=
=
=
=
=
RATING CHART
~~
mA
rnA
rnA
mA
hFE
hFE
Is/.
9J-C
40 to 2S0
40 min
lS0min
Smax
mA
·C/W
TYPE 40313
<">1000 CASE TEMPERATURE (Tc"
!:!
I~
'"l:!....
800
:!! 600
'\
:I
iii
I~
~
TEMPERATUREITC"I75~
200
100
300
400
I
I
/- V~ F~~~~~I~~:~~-~~~U~'_5
~
IY
I'/.
4~
" I
DCMAX.-
2 1.5
BASE MILLIAMPERES (IB =1
8
0.510
o
25
50
75
100
125
150
175
COLLECTOR-TO-EMITTER VOLTS (VeE'
COLLECTOR-TO-EMITTER VOLTS (VCE'
TL 1745T
TL 1744T
40314
I
:t-I.. DISSIPATION
LOCUS
____
3
~
:1200
.:10
25·C
r-- r- 8 I
Q.
::IE
125
0
Smax
lOmax
lOmax
Smax
TYPICAL COLLECTOR CHARACTERISTICS
'tYPE 40315
~
CASE
IeEo
IeEv
IeEv
lEBO
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier driver stages for economical highquality performance. Designed to assure freedom from second breakdown in
the operating region. JEDEC TO-5, Outline No.3. Terminals: 1 - emitter,
2 base, 3 - collector.
0'
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ..........................
Emitter-to-Base Voltage ......................................................... .
Collector Current ........................................................................
Base Current .............................................................................. ..
Transistor Dissip,ation:
TA up to 25 C ...................................................................... ..
Te up to 2SoC ...................................................................... ..
TA and Te above 2SoC ....................................................... .
Temperature Range:
Operating (Junction) ........................................................... .
CHARACTERISTICS (At case temperature
==
=
40315
=
=
=
=
PT
PT
PT
TJ(opr)
V
V
A
A
1
W
W
5
See curve page 112
-65 to 200
°C
25 o C)
Collector-to-Emitter Sustaining Voltage
(Ie = 100 mA, lB = 0, t p = 300 p.s, df = 2%) ........
Collector-to-Emitter Saturation Voltage
(Ie
150 mA, lB
15 rnA) .......................................... ..
Base-to-Emitter Voltage (VeE = 4 V, Ie
50 rnA) .. ..
Collector-Cutoff Current:
VeB == 15 V, h = 0, Te = 25·C ...................................... ..
VeB
15 V. IE
0, Te
150·C .................................... ..
Emitter-Cutoff Current (VEB = 2.5 V, Ie = 0) ............
Static Forward-Current Transfer Ratio
(VeE = 4 V, Ie = 50 rnA) ............................................... .
Gain-Bandwidth Product (VeE = 4 V, Ie = 50 rnA)
Thermal Resistance, Junction-to-Case ............................. .
Thermal Resistance, Junction-to-Ambient ......................
=
40
2.5
0.7
0.2
Ve"o(sus)
VEBO
Ie
lB
40 min
V
1.4 max
1 max
V
V
leBO
leBO
hBO
0.25 max
1 max
1 max
p.A
rnA
rnA
hFE
fT
9J-e
9J-A
70 to 350
100
35 max
175 max
Mc/s
·C/W
°C/W
VeEo(sus)
VeE (sat)
VB"
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier inverter and driver stages for economical high-quality performance. Designed to assure freedom from second
Technical Data for RCA Transistors
301
breakdown in the operating region. JEDEC TO-5, Outline No.3. Terminals:
1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ......................... .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ....................................................................... .
Base Current .............................................................................. ..
Transistor Dissipation:
TA up to 25·C ........................................................................
Tc up to 25·C ...................................................................... ..
TA and Te above 25·C ...................................................... ..
Temperature Range:
Operating (Junction) .......................................................... ..
CHARACTERISTICS (At case temperature
=
=
PT
PT
PT
35
2.5
0.7
0.2
V
V
A
A
1
W
W
5
curve
page
112
See
-65 to 200
·C
VnE
3Smin
1 max
V
V
leBo
leBO
lEBO
0.2Smax
lrnax
1 max
/LA
rnA
rnA
hFE
70 to 350
100
3Srnax
17Smax
·c/W
TJ(opr)
= 25°C)
Collector-to-Emitter Breakdown Voltage
(Ie = 100 mA, IB = 0, t p
300 p,s, df = 2%) ........
Base-to-Emitter Voltage (VCE
4 V, Ic
50 mAl .. ..
Collector-Cutoff Current:
VCB
15 V, lE
0, Tc
25·C ........................................
VCB = 15 V, IE = 0, Tc
150·C .................................... ..
Emitter-Cutoff Current (VEB == 2.5 V, Ic = 0) .......... ..
Static Forward-Current Transfer Ratio
(VCE == 4 V, Ie == 50 mAl .............................................. ..
Gain-Bandwidth Product (VCE = 10 V, Ic == 50 mAl
Thermal Resistance, Junction-to-Case ............................ ..
Thermal Resistance, Junction-to-Ambient .................... ..
==
VCEO(SUS)
VEBO
Ic
In
=
=
=
V(BR)OEO
fT
SJ-e
SJ-A
Mc/s
·C/W
40316
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier output stages for economical highquality performance. Designed to assure freedom from second breakdown in
the operating region. JEDEC TO-66, Outline No.22. Terminals: 1 (B) - base,
2 (E) - emitter, Mounting Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Emitler Sustaining Voltage
(RBm = SOO 0) ......................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Base Current ................................................................................
Transistor Dissipation:
Te up to 2S·C ...................................................................... ..
Te above 25·C ...................................................................... ..
Temperature Range:
Operating (Junction) .......................................................... ..
CHARACTERISTICS (At case temperature
=
=
=
POWER TRANSISTOR
PT
PT
TJ(opr)
40
5
4
2
V
V
A
A
29
W
See curve page 112
-65 to 200
·C
40rnin
1.4 max
V
V
lOmax
Srnax
Smax
p,A
. rnA
mA
20 to 120
750
6 max
·c/w
= 25°C)
Collector-to-Emitter Sustaining Voltage
(Ie
100 mA, RBE = SOO 0) ............................................
Base-to-Emitter Voltage (Vel' = 2 V, Ie = 1 A) ........
Collector-Cutoff Current:
VeB
IS V, IE
0, Te
25·C ........................................
VeB = 15 V, IE = 0, Te == 1S0·C .................................... ..
Emitter-Cutoff Current (VEB = S V, Ie == 0) .............. ..
Static Forward-Current Transfer Ratio
(VeE = 2 V, Ie
1 A) .................................................. ..
Gain-Bandwidth Product (Ve .. == 4 V, Ie = SOO mAl
Thermal Resistance, Junction-to-Case ............................ ..
=
=
VCER(SUS)
VEBO
Ie
Is
VeER (sus)
VBE
leBO
leBO
bBO
hI'''
iT
9J-C
kc/s
40317
Si n-p-n type used in audio-amplifier inverter and driver stages for economical high-quality performance. Designed to assure freedom from second
RCA Transistor Manual
302
breakdown in the operating region. JEDEC TO-5, Outline No.3. Terminals:
1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ..........................
Emitter-to-Base Voltage ..........................................................
Collector Current ..............•.........................................................
Base Current ................................................................................
Transistor Dissipation:
TA up to 25·C •.......................................................................
Te up to 25·C ................•.......................................................
TA and Te above 25·C ..................................................... ...
Temperature Range:
Operating (Junction) ........................................................... .
VelllO(SUS)
VlllBO
Ie
In
PT
PT
PT
40
2.5
0.7
0.2
V
V
A
A
1
W
5
W
See curve page 112
-65 to 200
·C
40rnin
1rnax
V
V
leBO
leBO
lEBO
0.25rnax
1rnax
1rnax
J.l.A
rnA
rnA
hFE
40 to 200
35rnax
175 max
·C/W
·C/W
Tl(opr)
CHARACTERISTICS (At case temperature = 25°C)
Collector-to-Emitter Sustaining Voltage
(Ie
100 rnA. In = O. t.
300. J.l.S. df ~ 2%) ........
Base-to-Emitter Voltage (VClll
4 V. Ie = 10 rna) ... .
Collector-Cutoff Current:
VeB = 15 V. Illl = O. Te = 25·C ....................................... .
VeB = 15 V. Illl
O. Te = 150·C ..................................... .
Emitter-Cutoff Current (VlllB
2.5 V. Ie = 0) ............
Static Forward-Current Transfer Ratio
(Velll·= 4 V. Ie == 10 rnA) ............................................... .
Thermal Resistance. Junction-to-Case ..............................
Thermal Resistance. Junction-to-Ambient ....................... .
=
==
=
VCEO(SUS)
VBE
=
40318
91-e
91-A
POWER TRANSISTOR
Si n-p-n high-voltage type for direct 117-volt line operation in audioamplifier output stages for economical high-quality performance. Designed
to assure freedom from second breakdown in the operating region. JEDEC
TO-66, Outline No.22. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting
Flange - collector and case.
MAXIMUM RATINGS
Collector-to-Ernitter Sustaining Voltage
(RBE = 500 0) ........................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ........................................................................
Base Current ................................................................................
Transistor Dissi.r.ation:
~~ ~go~ ~~.g
VeES(Sus)
VEBO
Ie
In
::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
To = 175·C ............................................................................
Temperature Range:
Operating (Junction) ........................................................... .
RATING CHART
2:0\TYP
V
V
A
A
PT
PT
PT
35
W
See Rating Chart
5
W
Tl(opr)
-65 to 200
·C
TYPICAL COLLECTOR CHARACTERISTICS
40318
_1000 TYPE 40318
CASE TEMPERATURE ITC» 2l5"C
t1
~\
::\800 f--II:
II!
loo\.
MAX. - DISSIPATION LOCU~r
32400 VtY/
~
~ TEMPERATURE (TC)~
~~200
8
o
100
200
300
400
COLLECTOR-TO-EMITTER VOLTS (VCE)
TLIHIT
I
A
/, ".~ r35 WATTS (STEADY-STATE
~6oo
I~
o
300
6
2
1
4
3
v:
v-g::SS~~N ILOCUS
2'/ ~,
'1lASE MILLIAMPERES :IB,sl -
--
-
0
25
50
75
100
1215
150
175
COLLECTOR-TO-EMITTER VOLTS (VCE)
.... /Om
303
Technical Data for RCA Transistors
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage
(Ie = 200 mA. RBE = SOO 0) ............................................
Base-to-Emitter Voltage (VeE = 10 V. Ie = O.S A) ... .
Collector-Cutoff Current:
VeE = ISO V. In = 0 ....................................................... .
VCE
ISO V. VBE
-1.S V. Te
2S·C ................... .
VeE = ISO V. VnE
-1.S V. Te
lS0·C ..................
Emitter-Cutoff Current (VEB = 6 V. Ie = 0) ................
Static Forward-Current Transfer Ratio:
VeE = 10 V. Ie = 20 rnA ............................................... .
VeE = 10 V. Ie = SOO mA ............................................. .
Second-Breakdown Collector Current (VeE
ISO V)
Second-Breakdown Energy (VEB
4 V. RBE
20 O.
L = 100 #H) ........................................................................... .
Thermal Resistance. Junction-to-Case ..............................
=
=
=
=
=
==
=
VeEn(sus)
VBE
300 min
1.Smax
V
V
IeEo
leE v
leE v
lEno
Smax
Smax
lOmax
Smax
mA
rnA
rnA
rnA
hFE
IS/b
40rnin
SO min
100 min
rnA
Es/.
8J-e
SO min
Smax
#J
·C/W
hFE
40319
POWER TRANSISTOR
Si p-n-p type used in audio-amplifier driver stages for economical highquality performance. Designed to assure freedom from second breakdown
in the operating region. P-N-P construction permits complementary driver
operating with a matching n-p-n type, such as 40314. JEDEC TO-5, Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ........................... .
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Base Current ............................................................................... .
Transistor Dissipation:
TA up to 2S·C ....................................................................... .
Te up to 25·C ....................................................................... .
TA and Te above 25·C ....................................................... .
Temperature Range:
Operating (Junction) ........................................................... .
_600,......:..TY_P_I,-CA_L--=.CO,-L_L-=E:.::C,-TO:..:R-=-..:C.:,:H:..:.AR:..:;A:..:;CT:r=:E::..;R::..:IS=TT..;.;IC",S:....,
-
t!. -soo
-14
..:3
::e
TJ (opr)
-65 to 200
FREE-AIR TEMPERATURE
(TFAI'2S"C
!:!
1/
-6
-300
:iii
/
II
-4
o
·C
_-10 f-VOLTS IV(:E"-IO
-8
Q.
1
W
5
W
See curve page 112
~~rM~~:TO-illTTiR
.
-121---;---1
-10
...15 -400
PT
PT
PT
A
A
TYPICAL INPUT CHARACTERISTIC
TYPE 40319
FREE-AIR TEMPERATURE (TFA)' 2S·C
VI
V
V
-40
-2.S
-0.7
-0.2
VOl'O(SUS)
VEDO
Ie
ID
-2
-4
-6
-8
-10
-12
o
-14
COLLECTOR-TO-EMITTER VOLTS !VCE)
/
-0.2BASE-TO-EMITTER
-0.4 -0.6 -0.8VOLTS-I(VaEl-1.2
TLI77ZT
TL 1770T
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage
(Ie = -100 mA. IB
O. t. = 300 #s. df ;§; 2%)
Collector-to-Emitter Saturation Voltage
(Ie = -ISO rnA. IB
-15 rnA) ....................................
Base-to-Emitter Voltage (VeE
-4 V. Ie
-50 rnA)
Collector-Cutoff Current:
VeD = -IS V. lE
O. Te
25·C ................................... .
VeB = -IS V. II. = O. Te = 150·C ................................. .
Emitter-Cutoff Current (VEB = -2.S V. Ie = 0) ........
Static Forward-Current Transfer Ratio
(VeE
-4 V. Ie
-SO mA) ....................................... .
Gain-Bandwidth Product (VCE = -4 V. Ie = -50 rnA)
Thermal Resistance. Junction-to-Case ................................
Thermal Resistance. Junction-to-Ambient ......................
=
=
=
=
=
=
=
=
VeEO(sus)
VOl. (sat)
VB"
leBO
leBO
lEBO
-40 min
V
-1.4 max
-1 max
V
V
-0.25 max
-1 max
-1 max
rnA
rnA
3S to 200 max
100
3Smax
17Smax
·C/W
·C/W
p.A
Mc/s
RCA Transistor Manual
304
40320
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier inverter and driver stages for economical high-quality performance. Designed to assure freedom from second
breakdown in the operating region. JEDEC TO-5, Outline No.3. Terminals:
1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ........................... .
Emitter-to-Base Voltage ........................................................ ..
Collector Current ...................................................................... ..
Base Current .............................................................................. ..
Transistor Dissi.r.ation:
TA up to 25 C ....................................................................... .
Tc up to 25'C ........................................................................
TA and Te above 25'C ....................................................... .
TeDlperature ~ge:
Operating (Junction) ............................................................
40
2.5
0.7
0.2
VeEo(sus)
VEBO
Ie
IB
PT
PT
PT
V
V
A
A
W
1
5
W
See curve page 112
-65 to 200
'C
40 Dlin
IDlax
V
V
leBO
leBO
lEBO
0.25Dlax
IDl8X
IDl8X
DlA
hFm
8J-e
40 to 200
35 Dlax
'C/W
TJ(opr)
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage
(Ie = 100 DlA, IB ='0, t p
300 /LS, df ~ 2%) ........
Base-to-EDlitter Voltage (Vem
4 V, Ie
10 DlA) .. ..
Collector-Cutoff Current:
VeB = 15 V, 1m
0, Te = 25'C ........................................
VeB
15 V, 1m = 0, Te
150'C .................................... ..
Emitter-Cutoff Current (VEB
2.5 V, Ie
0) ........... .
Static Forward-Current Transfer Ratio
(VeE
4 V, Ie = 10 DlA) .............................................. ..
TherDlal Resistance. Junction-to-Case ................................ ..
=
=
=
==
VeEo(sus)
VBE
=
==
=
40321
/LA
DlA
POWER TRANSISTOR
Si n-p-n high-voltage type for direct 117-volt line operation in audio- amplifier driver stages for economical high-quality performance. Designed to
assure freedom from second breakdown in the operating region. JEDEC
TO-5; Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage
(RBE = 1000 0) ........... _ .......................................................
VeER (sus)
VEBO
Ie
IB
: Base
~~H~~;~-:°c~~~~n{'~.~~~~...::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Current .............................................................................. ..
Transistor Dissipation:
TA up to 50'C ...................................................................... ..
Te up to 50'C ...................................................................... ..
TA and Te above 50'C ........................'.............................. ..
TeDlperature Range:
Operating (Junction) .......................................... ,............... ..
",
~
:j
Tl(opr)
-65 to 300
!
V2.cy
I~~ILLIAMPERES (IB)'Ot
I' f-Q4
Y
L-0.3
..140
..,o ~
I 0.2
2
1,0
40
SO
120
160
200
COLLECTOR-lO-EMITTER VOLTS (VCE)
0.2
240
TL IIIIT
~
t= f=v~
.A'
0.1
l -I -
~~
6
4
2
.=
0'1-
~"/-
,,~
•
i
• 10
I
t:'
~
2
0.75
(Vc~)
.~
2
4
1.0
V1
'C
OV/
2
:Eso
o
1
W
5
W
See curve page 112
TYPE 40321
COLLEClOR-lO-EMITTER VOLTS
4.0~
'"
~120 / /
PT
PT
PT
TYPICAL INPUT CHARACTERISTICS
TYPICAL COLLECTOR 'CHARACTERISTICS
200 TYPE 40321
CASE TEMPERATURE (Tcl- 25 0 C
;j160
V
V
A
A
300
5
1
0.5
I
/
0.3
0.4
0.5
0.6
0.7
BASE-TO-EMITTER VOLTS (VSEI
0.8
92C5-12618T
305
Technical Data for RCA Transistors
CHARACTERISTICS (At case temperature
= 25·C)
Collector-to-Emitter Sustaining Voltage
(Ie
50 rnA, RBE
1000 n) ............................................
Base-to-Emitter Voltage (VeE
10 V, Ie
50 rnA) ... .
Collector-Cutoff Current:
VeB
150 V, lE = 0, Te = 150·C ............................... .
VeE = 150 V, RBE = 1000 n ............................................
Emitter-Cutoff Current (VEB = 5 V, Ie
0) ............... .
Static Forward-Current Transfer Ratio
(VeE
10 V, Ie
20 rnA) ............................................... .
Thermal Resistance, Junction-to-Case .............................•
=
=
=
=
=
=
=
=
VeER (sus)
VBE
300 min
2 max
V
V
leBO
leER
lEBO
100 max
5 max
100 max
/loA
hFE
6J-e
25 to 200
30 max
·CiW
p.A
p.A
40322
POWER TRANSISTOR
Si n-p-n high-voltage type for direct 117-volt line operation in audio-amplifier output stages for economical high-quality performance. Designed to
assure freedom from second breakdown in the operating region. JEDEC
TO-66, Outline No.22. Terminals: 1 - base, 2 - emitter, Mounting Flange collector and case. For rating chart and collector-characteristics curves,
refer to type 40318.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage
(RBE = 500 0) ........................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ....................................................................... .
Base Current ............................................................................... .
Transistor Dissipation:
To up to 25'C ....................................................................... .
. To above 25'C ........................................................................
Te = 175'C ................................................................................
Temperature Range:
Operating (Junction) ........................................................... .
CHARACTERISTICS (At case temperature
=
=
=
PT
PT
PT
TJ(opr)
300
6
2
1
V
V
A
A
35
W
See Rating Chart
5
W
DC
--6S to 200
= 25·C)
Collector-to-Emitter Sustaining Voltage
(Ie
200 rnA, RUE = 200 n, L
5 mH) ............... .
Collector-Cutoff Current:
VeE = 150 V, Is = 0, Te
25'C ....................................
VeE = 150 V, VBE = -1.5 V, To
25'C ........................
VeE
150 V, VBE
-1.5 V, Te
150'C ................... .
Emitter-Cutoff Current (VEB = 6 V, Ie = 0) ................
Static Forward-Current Transfer Ratio:
VeE = 10 V, Ie = 20 rnA ............................................... .
VeE = 10 V, Ie = 500 rnA ............................................. .
Second-Breakdown Collector Current (VeE
150 V)
Second-Breakdown Energy (VEB = 4 V, RBE = 20 n,
L
100 p.H) ............................................................................
Thermal Resistance, Junction-to-Case ..............................
=
VeER (sus)
VEBO
Ie
Is
=
==
=
=
VeEB(sus)
300 min
V
leEo
ICEV
IeEv
lEBO
5 max
lOmax
lOmax
Srnax
rna
lsi.
hFE
hFE
40 min
75 min
100 min
rna
Es/.
6J-o
SO min
5 max
p.J
DCiW
rnA
rnA
rnA
40323
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier inverter and driver stages for economical high-quality performance. Designed to assure freedom from second
1 - emitter, 2 - base, 3 - collector. For collector-characteristics and transfercharacteristics curves, refer to type 40309.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ..........................
Emitter-to-Base Voltage ......................................................... .
Collector Current ....................................................................... .
Base Current ................................................................................
Transistor Dissipation:
TA up to 25'C ........................................................................
Te up to 2SoC ........................................................................
TA and Te above 25 DC ........................................................
Temperature Range:
Operating (Junction) ............................................................
VeEo(sus)
VEBO
Ie
IB
PT
PT
PT
TJ(opr)
18
2.5
0.7
0.2
V
V
A
A
1
W
-6S to 200
DC
5
W
See curve page 112
306
RCA Transistor Manual
CHARACTERISTICS (At case temperature
25°C)
Collector-to-Emitter Breakdown Voltage
(Ie
100 mA, lB
0, t p
300 p.s, df :$ 2%) ........... .
Base-to-Emitter Voltage (VCE = 4 V, Ic ~ 50 mAl ... .
Collector-Cutoff Current:
VCB = 15 V, IE
0, Tc
25°C ....................................... .
VCR = 15 V, 1m = 0, Tc
150°C ..................................... .
Emitter-Cutoff Current (VEB
2.5 V, Ic
0) ........... .
Static Forward-Current Transfer Ratio
(Vcm.= 4 V, Ic
50 mAl ............................................... .
Gain-Bandwidth Product (VCE = 10 V, Ic = 50 mAl
Thermal Resistance, Junction-to-Case ............................. .
Thermal Resistance, Junction-to-Ambient ..................... .
=
=
=
=
=
==
=
40324
=
V(BR) CEO
VB"
18 min
1 max
V
V
ICBO
ICBo
bBO
0.25 max
1 max
1 max
p.A
mA
mA
hFE
fT
70 to 350
100
35 max
175 max
Mc/s
°C/W
°C/W
8J-C
8J-A
POWER TRANSISTOR
Si n-p-n type used in audio-amplifier inverter and driver stages for economical high-quality performance. Designed to assure freedom from second
breakdown in the operating region. JEDEC TO-66, Outline No.22. Terminals:
1 - base, 2 - emitter, Mounting Flange - collector and case. For collectorcharacteristics and transfer-characteristics curves, refer to type 40310.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ........................ ..
Emitter-to-Base .Voltage ........................................................ ..
Collector Current ...................................................................... ..
Base Current .............................................................................. ..
Transistor Dissipation:
Tc up to 25°C ........................................................................
Tc above 25°C ........................................................................
Temperature Range:
Operating (Junction) ............................................................
.CHARACTERISTICS (At case temperature
=
=
=
=
=
=
40325
PT
PT
TJ(opr)
35
2.5
4
2
V
V
A
A
29
W
See curve page 112
-65 to 200
°C
35 min
1.4 max
V
V
leBO
lOmax
5 max
5 max
mA
hFE
fT
20 to 120
750
6 max
kc/s
°C/W
= 25°C)
Collector-to-Emitter Breakdown Voltage
(Ic
100 mA, RBE
500 0) ............................................
Base-to-Emitter Voltage (VCE = 2 V, Ic = 1 A) ...... ..
Collector-Cutoff Current:
VCB
15 V, b
0, Tc
25°C ....................................... .
V,cB = 15 '!'.. b = 0, Tc
l~O°C ..............:::..................... .
Emitter-CutoI'I Current (VER _ 2.5 V, Ic _ 0) .......... ..
Static Forward-Current Transfer Ratio
(VCE = 2 V, Ic = 1 A) .................................................. ..
Gain-Bandwidth Product (VCE
4 V, Ic = 500 mAl
Thermal Resistance, Junction-to-Case ............................ ..
=
VCEO(SUS)
VEBO
Ic
lB
V
::
1
';50
g
r
/'
o
530
/
!5
~ 20
V
/
-
Q.
IL
0::
10
0123456
RF POWER INPUT (PIN)-WATT~LI8.OCT
40346
POWER TRANSISTOR
Si n-p-n triple-diffused planar type used in low-power, high-voltage, general-purpose applications in military, industrial, and commercial equipment. This type is particularly useful in neon-indicator driver circuits and
in high-voltage differential and high-voltage operational amplifiers. JEDEC
TO-5, Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case.
MAXIMUM RATINGS
=
Collector-to-Emitter Voltage (Rn
1000 n) .......... ..
Collector Current ...................................................................... ..
Base. Current .............................................................................. ..
Transistor Dissipation:
TA up to· 50·C ...................................................................... ..
Tc up to 50·C ........................................................................
TA and Tc above 50·C ....................................................... .
Temperature Range:
Operating (TA-Tc) .............................................................. ..
'0
...9
~150
o
TYPE 40346
CASE TEMPERATURE (TC)- 25·C
--,/ )1 \~
~125
1/ / /
~IO
OJ
::J
:!
::Ii
0
75
~
~50
.J
82
'I.v
~I--
I
0.5
4
0.4
2
·C
~
q
t: ~
t! 500
VCEV(SUS)
VCEO(SUS)
!.
1"1 i::
.a
2
4.8
10
100
COLLECTOR MILLIAMPERES
400
2.00
J.
I
I
I
i
I
I
10
!
~
~
~~
100
J.
TYPE 40396 I
COMMON-EMITTER CIRCUIT. BASE INPUT.
CASE TEMPERATURE (TC)-25"C
PULSE TEST' PULSE OURATION:SIO ms
TY FACTOR-O.I
f--
!
I
j...
Ii
0.5
BASE MlllAMPERES (1B)-O.l
o
2.
4
6
8
~
~
COLLECTOR-TO-EMITTER VOLTS (VeE'
n
16
14
92C$-13170T
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
Ie
-1 rnA. RBm
4.7 kQ ..............................
Ie = 1 rnA. RBm
4.7 kQ ..................................
Collector-to-Emitter Saturation Voltage:
Ic = -250 mA~ b
-25 rnA ............................
Ie = 250 rnA. ~B = 25 rnA ....................................
Collector-Cutoff Current:
VeB
-12 V. b
0 ..............................................
VOB
12 V, b
0 ..............................................
=
=
=
==
=
==
V(BRlCBR
V(BRlCBR
-18 min
Vcm(sat)
VeB(sat)
-0.25
leBO
lOBO
-14 max
18 min
V
V
-0.25
V
V
14 max
pA
/LA
328
RCA Transistor' Manual
CHARACTERISTICS (cont'd)
Emitter-Cutoff Current:
VIDB
-2.5 V. 10
0 ..........................................
VIDB
2.5 V. 10 == 0 ...............................................
Static Forward-Current Transfer Ratio:
VelD
-1 V. 10
-250 rnA ................................
VelD
1 V. Ie = 250 mA ....................................
Small-Signal Forward-Current Transfer,Ratio
Cutoff Frequenc:l7:
VOID
-6 V. 10
-1 mA ............................
VCIlI
6 V. 10
1 mA ....................................
=
=
=
=
=
=
=
=
==
40404
1I-P-1I
P-1I-P
bBo
bBo
-14 max
hll'E
hll'lD
30 min
fhfb
fhfb
1.5
/LA
14 max
/LA
30 min
Mc/s
Mc/s
2
TRANSISTOR
Si n-p-n epitaxial planar type used in vhf low-level class C rf amplifiers and
frequency multipliers at frequencies to 170 Mc/s in communications equipment. JEDEC TO-52, Outline No.1S. Terminals: 1 - emitter, 2 - base, 3 collector and case.
MAXIMUM RATINGS
Collector-to-Base Voltage ........................................................
Collector-to-Emitter Voltage ................................................ ..
Emitter-to-Base Voltage ........................................................ ..
Collector CUrrent ........................................................................
Transistor Disslp,ation:
i~ ~~ ~ ~~.g
:::::::::::::;::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
TA and Te above 25·C ........................................................
Temperature Range:
Operating (TA-Te) ................................................................
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ...................... ..
VeBo
VeEo
VEBO
Ie
V
V
V
A
40
16
5
0.5
PT
PT
PT
0.3
W
1
W
See curve page 112
TSTG
TL
-65 to 175
-65 to 200
300
·C
·C
·C
V
CHARACTERISTICS'
Collector-to-Base Breakdown Voltage
(Ie
0.1 mAo IE
0) ...................................................... ..
Collector-to-Emitter Breakdown Voltage
(Ie = 10 rnA. Is
O. t p ;;:; 100 ns. df
2%) .......... ..
Emitter-to-Base Breakdown Voltage
(IE
0.01 rnA. Ie
0) .................................................. ..
Collector-Cutoff Current (VeB
20 V. IE
0) ........
Static Forward-Current Transfer Ratio
(VCE = 2 V. 10 = 50 rnA) ................................................
Output Capacitance (VCB
5 V. IE
O.
f = 0.1 to 1 Mc/s) .............................................................. ..
RF Power Output. Frequency-Doubler
(Vee
12 V. Pie = 5 mW. f(in)
43 Mc/s.
f(out) = 86 Mc/s) .................................................. ..
=
=
=
=
=
=
=
=
=
=
=
=
• For conditions given. minimum efficiency
TYPICAL OPERATION CHARACTERISTICS
TYPE 40404
V(BR)eBO
40 min
V(BB) CEO
16 min
V
V(BR)EBO
leBO
5 min
25 max
V
nA
hFE
25 to 65
4 max
pF
50* min
mW
Cobo
Poe
35 per cent.
TYPICAL POWER-GAIN CHARACTERISTICS
TYPE ~9'04
COMMON-EMITTER CIRCUITt BASE INPUT. AMBIENT TEMPERATURE
25°C
DC COLLECTOR SDPPLY,
,!VcC)-15fiN' fOUT
Jotl'f
-r
COMMON-EMITTER CIRCUIT. BASE INPUT.
AMBIENT TEMPERATURE (TA)-25°C
COLLECTOR-TO-EMITTER VOLTS (VCE)~15
flN'fOUT
I I
I....
,II I
......N.!
.,... %
~~
IIIP(i'l'1'6 ~I::::::::
t(,tW04'1'~~~(~
t-
20
40
60
80
RF INPUT POWER (P'N)-MILLIWATTS
t2CS-I3726T
o
10
2
4
I "I a
Il II I I
-- 6
8
200
100
FREQUENCY (f)-M~2CS-15727T
329
Technical Data for RCA Transistors
40405
TRANSISTOR
Si n-p-n epitaxial planar type used in class C rf power amplifiers, drivers, and
frequency multipliers at frequencies to 400 Mc/s in battery-operated communications equipment. JEDEC TO-52, Outline No.1S. Terminals: 1 - emitter,
2 - base, 3 - collector and case.
MAXIMUM RATINGS
Collector-to-Emitter Voltage:
Base open ................................................................................
VRE = 0 ....................................................................................
Emitter-to-Base Voltage ..........................................................
Collector Current ................................................. ,,, ....................
Transistor Dissipation:
TA up to 25'C ...................................................................... ..
Te up to 25'C ...................................................................... ..
TA and Te above 25'C ...................................................... ..
Temperature Range:
Operating (TA-Tc) ................................................................ ..
Storage ........................................................................................
Lead-Soldering Temperature (10 s max) ........................
VeEo
VeEs
VERO
Ie
16
40
6
0.5
PT
PT
PT
0.3
W
1
W
See curve page 112
TSTG
TL
-65 to 175
-65 to 200
300
V
V
V
A
'C
'C
'c
CHARACTERISTICS
Collector-to-Emitter Breakdown Voltage:
Ic = 10 rnA. Is = O. t p
100 .p.s. df = 2% ............... .
Ic=5mA.RBE=0 .......................................................... ..
Emitter-to-Base Breakdown Voltage
(IE = 0.01 rnA. Ie = 0) .................................................... ..
Collector-Cutoff Current (VeE = 15 V. RBE = 0) .. ..
Static Forward-Current Transfer Ratio
(VeE = 1 V. Ie = 100 mAl ................................................
Small-Signal Forward-Current Transfer Ratio
(VCE = 1 V. Ie = 100 rnA. f = 100 Mc/s) ................
Gain Bandwidth Product (10 = 100 rnA. VCE = 1 V)
Output Capacitance (VeR = 5 V. 1m = 0,
.
f = 0.1 to 1 Mc/s) ................................................................
RF Power Output. Frequency-Doubler
(Vec = 15 V. PI. = 30 mW. f(in) = 86 Mc/s.
f(out) = 172 Mc/s) .............................................. ..
=
V(RR)CEO
V(BR)CES
16 min
40 min
V(BR)ERO
ICES
6 min
0.4 max
V
V
V
/LA
hFE
20 min
hte
iT
3 min
300 min
Mc/s
Cobo
3.5 max
pF
200* min
mW
Poe
• For conditions given. minimum efficiency = 35 per cent.
TYPICAL OPERATION CHARACTERISTICS
TYPICAL OPERATION CHARACTERISTICS
TYPE 40405
~,:~~~~f~A'¥~~T'r~iJ~UT.
DC COLLECTOR SUPPLY VOLTSIVCCI=12
fiN " fOUT
t;
::>
....
TYPE 40405
1000 COMMON-EMITTER CIRCU I~ BASE INPUT.
I-~MBIENT TEMPERATURE ( A'-25" C
Q
I
800
~~
et
600
~:=
400 W
~"j:.
ID
/
/?-
~
~IJ
';~~f{j.\C--
'2.-q
:\~
,,'I~
200
o
3040
r-
1--
I
Z
g
~JIIIII
f--
~
4
'\.'l
'I
68
4
68
10
100
COLLECTOR MILLIAMPERESIIC'
92CS-13734T
TRANSISTOR
40406
Si p-n-p type used in the input stages in af-amplifier applications in industrial and commercial equipment. JEDEC TO-5, Outline No.3. Terminals:
1 - emitter, 2 - base, 3 - collector and case. For collector-characteristics and
input-characteristics curves, refer to type 40319.
330
RCA Transistor Ma.nual
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ............................
Emitter-to-Base Voltage ........................................................ ..
Collector Current ........................................................................
Base Current ................................................................................
Tr~::fo~~·~~~~~:.................................................................
TA above 25·C ........................................................................
Temperature Range:
Operating (Junction) ............................................................
CHARACTERISTICS (At case temperature
=
=
=
=
=
=
=
==
=
=
40407
PT
PT
-so
-4
-0.7
-0.2
V
V
A
A
1
W
See curve page 112
-65 to 200
·C
VeBo(sus)
VBB
-50 min
-0.8 max
V
V
lello
lello
bBO
-1 max
-lOmax
-1 max
mA
hFID
20 to 200
100
35 max
175 max
Mc/s
·C/W
·C/W
TJ(opr)
= 25·C)
Collector-to-Emitter Sustaining Voltage
(Ie
-100 mAo IB
0) ............•.......•...............................
Base-to-Emitter Voltage (Ie
-0.1 mAl ...................... ..
Collector-Cutoff Current:
Vem
-40 V. IB
O. Te
25·C ....................................
Vem
-40 V. IB
O. Te
150·C ..................................
Emitter-Cutoff Current (VmB
-4 V. Ie
0) ............
Static Forward-Current Transfer Ratio
(Vem
-10 V. Ie
-0.1 mAl ........................................
Gain-Bandwidth Product (Vem = -4 V. Ie
-50 mAl
Thermal.Resistance. Junction-to-Case ................................
Thermal Resistance. Junction-to-Ambient ....................... .
=
=
=
Vemo(sus)
VIIBO
Ie
IB
b
8J-C
8J-A
pA
p.A
TRANSISTOR
Si n-p-n type used in predriver stages in ai-amplifier applications in industrial and commercial equipment. This type is recommended for use in a
Darlington circuit with a type such as the 40408. JEDEC TO-5, Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case. This type is
electrically identical with type 40406 except for reversal of all polarity signs.
For collector-characteristics and transfer-characteristics curves, refer to
type 40309.
40408
TRANSISTOR
Si n-p-n type used in predriver stages in ai-amplifier applications in industrial and commercial equipment. This type is recommended for use in a
Darlington circuit with a type such as the 40407. JEDEC TO-5, Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case. For collectorcharacteristics and transfer-characteristics curves, refer to type 40309.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage ............................
Emitter-to-Base Voltage ..........................................................
Collector Current ...................................................................... ..
Base Current ................................................................................
Tranistor PissiJ!ation:,
i!
~~~ ~;.g
::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
Temperature Range:
Operating (Junction) ............................................................
VeBo(sus)
VIIBO
Ie
IB
PT
PT
TJ(opr)
90
4
0.7
0.2
V
V
A
A
1
W
See curve page 112
-65 to 200
·C
CHARACTERISTICS (At case temperature = 25·C)
Collector-to-Emitter Sustaining Voltage
coH~~r~=-~it!~
(Ie. = 150 mAo IB
S'a:lratioii. voitage......···......................
= 15 mAl .......................................... ..
Base-to-Emitter Voltage (Veil = 4 V. Ie = 10 mAl ....
Collector-Cutoff Current:
VOII
80 V. IB
O. Te
25·C .......................... ~ ............
. Veil = 80 ~ IB = O. Te
150·C ......................................
Emitter-Cuton: Current (VIIB
4 V. Ie = 0) ................
Static Forward-Current Transfer Ratio
Ga\!~~d!'iXihI~d~~lWell..·;;;..4..V:..·IO..;; ..50· ..iiiAi'
Thermal Resistance. Junction-to-Case ................................
Thermal Resistance. Junction-to-Ambient ........................
=
=
=
=
=
Vello(sus)
90 min
V
Veil (sat)
VBB
1.4 max
1 max
V
V
lello
lello
bBO
1 max
250 max
1 max
~
hFB
4()to 2()()
100
35 max
175 max
Mc/s
·C/W
·C/W
fT
8J-C
8J-A
p.A
Technical Data for RCA Transistors
331
40409
POWER TRANSISTOR
Si n-p-n type used in driver stages in af-amplifier applications in industrial
and commercial equipment. This type and type 40410 together form a complementary pair of drivers. In a typical class AB circuit a complementary
pair can drive two series-connected 40411 transistors to provide an audio
output of 70 watts with a total harmonic distortion of less than 0.25 per
cent at 1000 cycles per second. JEDEC TO-5 (with heat radiator), Outline
No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case (with heat
radiator). For collector-characteristics and transfer-characteristics curves,
refer to type 40309.
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage
(RBE ~ 10 0) ........................................................................
Emitter-to-Base Voltage ......................................................... .
Collect9r Current ........................................................................
Base Current ................................................................................
Transistor Dissipation:
TA up to 50·C ........................................................................
TA above 50·C ........................................................................
Temperature Range:
Operating (Junction) ............................................................
VCER(SUS)
VEBO
Ic
Is
PT
PT
TJ(opr)
90
4
0.7
0.2
V
V
A
A
3
W
See curve page 112
-65 to 200
·C
CHARACTERISTICS
Collector-to-Emitter Sustaining Voltage
(RBE = 100 0. Ic = 100 mAl ............................................
Collector-to-Emitter Saturation Voltage
(Ic = 150 mAo IB = 15 mAl ............................................
Base-to-Emitter Voltage (VCE
4 V. Ic
150 mAl ..
Collector-Cutoff Current:
VCE = 80 V. RBE = 100 0. Tc = 25·C ........................
VCE = 80 V. RBE = 100 0. Tc = 150·C ......................
Emitter-Cutoff Current (VEB = 4 V. Ic = 0) ............... .
Static Forward-Current Transfer Ratio
(VCE
4 V. Ic
150 mAl ................................................
Gain-Bandwidth Product (VCE = 4 V. Ic
50 mAl ....
Thermal Resistance. Junction-to-Ambient ....................... .
=
=
=
=
=
POWER TRANSISTOR
90 min
V
VCE(sat)
VBE
VCER(SUS)
1.4 max
1.1 max
V
V
ICER
ICER
lEBO
1 max
100 max
1 max
p.A
p.A
p.A
hFE
fT
aJ-A
50 to 250
100
50 max
·c/W
Mc/s
40410
Si p-n-p type used in driver stages in af-amplifier applications in industrial
and commercial equipment. This type and type 40409 form a complementary
pair of drivers. In a typical class AB circuit a complementary pair can
drive two series-connected 40411 transistors to provide an audio output of
70 watts with a total harmonic distortion of less than 0.25 per cent at 1000
cycles per second. JEDEC TO-5 (with heat radiator), Outline No.3. Terminals: 1 - emitter, 2 - base, 3 - collector and case (with heat radiator). This
type is electrically identical with type 40409 except for the reversal of all
polarity signs. For collector-characteristics and input-characteristics curves,
refer to type 40319.
POWER TRANSISTOR
40411
Si n-p-n type used in output stages in af-amplifier applications in industrial
and commercial equipment. In a typical class AB circuit, two series-connected 40411 transistors driven by a complementary pair of transistors
(40409 and 40410) can provide an audio output of 70 watts with a total
harmonic distortion of less than 0.25 per cent at 1000 cycles per second.
JEDEC TO-3, Outline No.2. Terminals: 1 (B) - base, 2 (E) - emitter, Mounting Flange - collector and case.
332
RCA Transistor Manual
MAXIMUM RATINGS
Collector-to-Emitter Sustaining Voltage
~~r:r_~_~2sen)viiitag~'''::::::::::::::::::::::::::::::::::::::::::::::::::::::::::
VeEB(sus)
VEBO
Ie
Is
Collector Current ........................................................................
Base Current ................................................................................
Transistor Dissipation:
Te up to 25°C ...................................................................... ..
Te above 25°C ........................................................................ ..
Temperature Range:
Operating (Junction) ............................................................
CHARACTERISTICS (At case temperature
90
4
30
15
V
V
A
A
150
W
See curve page 112
PT
PT
TJ(opr)
-65 to 200
°C
= 25°C)
Collector-to-Emitter Sustaining Voltage
Coh~~o;:~~tt~~ s~~~~~ V;;ltag~ ..............................
VeEB(sus)
90 min
V
(Ie
4 A. IB
400 rnA) .............................................. ..
Base-to-Emitter Voltage (VeE = 4 V. Ie = 4 A) ........
Collector-Cuto1f Current:
VeE = SO V. RBE = 100 n. Te
25°C ........................
VOE
SO V. RBE
100 n. Te
150'C ......................
Emitter-Cuto1f Current (VEB = 4 V. Ie
0) ................
Static Forward-Current Transfer Ratio
(VeE
4 V. Ie
4 A) .................................................. ..
Gain-Bandwidth Product (VeE
4 V. Ie
4 A) ........
Power-Rating Test (40 V at 5 A for 1 s max) ............
Thermal Resistance. Junction-to-Case ................................
VeE (sat)
VBE
1 max
I.Smax
V
V
IeEB
IeEB
lEBO
0.5 max
2 max
5 max
rnA
rnA
rnA
hFE
fT
35 to 100
SOO
200
1.17 max
kc/s
W
'C/W
=
=
=
=
=
=
=
=
=
=
=
TYPICAL COLLECTOR CHARACTERISTICS
91-C
TYPICAL TRANSFER CHARACTERISTICS
.I
TYPE 40411
TYPE 40411
COLLECTOR-TO-EMITTER IIOLTS !YcE1~
CASE TEMPERATURE (Te)- 211"C
U
!:! 12
II
BASE MILLIAMPEIIESIIBl"600
I
y
7.15
2.15
o
,,
r
I'
-
200
1100
.0
.5
0.!5 LO L!5 2.0 2.!5 3.0 U
4.0 4.5
COLLEClOR-ro:.EMlTTER IIOLTS (VCE)
92C$-I!l84T
t
.C-
o
~
t:~
j
I,
v(
~
1
I
2
"
BASE-TO-EMITTER VOLTS (YaEl
1IICS-11I88T
4
333
Technical Data
LIST OF DISCONTINUED TRANSISTORS
(Shown for reference only; see page 113 for symbol identification.)
CHARACTERISTICS
MAXIMUM RATINGS
RCA
Type
2N105
2N206
2N247
2N269
2N301
2N301A
2N307
2N331
2N356
2N357
2N358
2N373
2N374
2N456
2N457
2N497
2N544
2N561
2N578
2N579
2N580
2N583
2N584
2N640
2N641
2N642
2N643
2N644
2N645
2N656
2N696
2N705
2N710
2N711
2N794
2N795
2N796
2N828
2N955
2N955A
2N960
2N961
OutMaterial line
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Si
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Si
Si
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
YCR
(vults)
-25
1 -30
4 -35
1 -25
2 -40
2 -60
2 -35
6 -30
20
20
20
4 -25
4 -25
22 -40
22 -60
60
3
4 -18
22 -80
6 -20
6 -20
6 -20
1 . -18
1 -25
4 -34
4 -34
4 -34
6 -30
6 -30
6 -30
60
3
3
60
9 -15
9 -15
9 -12
9 -13
9 -13
9 -13
9 -15
12
9
12
9
9 -15
9 -12
YES
(vults)
-12
-10
-10
Ic
(amperes)
-0.015
-0.050
-0.010
-0.100
-3
-3
-1
-0.200
0.5
0.5
0.5
-0.010
-0.010
-5
-5
-12
20
20
20
-0.5
-0.5
-20
-20
8
-0.010
-1
-10
-60
-12
-0.400
-0.400
-12
-0.400
-12
-0.100
-10
-0.100
-12
-0.010
-1
-0.010
-1
-0.010
-1
-0.100
-2
-2
-0.100
-2
-0.100
8
-0.500
5
-3.5 -0.05
-0.05
-2
-1
-0.1
-0.100
-1
-0.100
-4
-0.100
-4
-2.5 -0.2
2
0.1
0.15
2
-2.5 -0.1
-0.1
-2
* 1 - emitter, 2 - base, 3 - collector.
PT
(watts)
0.035
0.075
0.080
0.120
11
11
10
0.200
0.100
0.100
0.100
0.080
0.080
50
50
4
0.080
50
0.120
0.120
0.120
0.120
0.120
0.080
0.080
0.080
0.120
0.100
0.120
4
2
0.15
0.15
0.15
0.150
0.150
0.150
0.3
0.15
0.15
0.3
0.3
Min.
hFE
Maximum
Operating
Temperature
ICR
Can be ref laced
('C)
by RCA ype
(!LA)
-5
55
55
33 -10
85
60 -10
71
85
24 -5
91
70 -100
70 -100
91
20 -1500
75
50 -16
71
5 85
30
5 85
30
5 85
30
71
60 -8
71
60 -8
95
52
95
52
12
10 200
-4
71
60
100
75
-5
71
10
-5
71
20
-5
71
30
85
20 -10
-5
85
40
-5
71
50
-7
71
50
-7
71
50
20 -10
71
71
20 -10
71
20 -10
10 200
30
1 175
20
25
-3 100
25
-3 100
20
-3 100
-3 85
30
-3
85
30
-3
85
50
25
-3 100
5 100
30
30
5 100
20
-3 100
20
-3 100
2N408
2N408
2N1180
2N404
2N2869 !2N301
2N2870/2N301A
2N2869
2N1638
2N647
2N647
2N647
2N1638
2N1631
2N2869
2N2869
2N217
2N2869
2N412
2N412
2N412
2N412
2N408
2N1637
2N1638
2N1639
2N1300
2N1301
2N1683
334
RCA Transistor Manual
LIST OF DISCONTINUED TRANSISTORS (cont'd)
CHARACTERISTICS
Min.
hFE
Maximum
Operating
TemperaICB
ture
Can be reflaced
(OC)
(ILA)
by RCA ype
0.3
0.3
0.3
20
20
40
-3
-5
-3
100
100
100
0.3
0.3
0.3
50
5
40
40
40
75
35
-3
-3
-5
15
100
100
100
100
175
10
50
50
2
38
20
20
35
15
25
25
15
175
175
175
175
20
20
10
8
-3
-3
-3
71
71
85
85
85
0.075
0.12
15
0.080 50
0.080 130
0.120 20
-3
-6
-12
-12
-10
85
71
71
71
85
2N1638
2N1638
2N217
MAXIMUM RATINGS
RCA
Type
2N962
2N963
2N9&4
2N965
2N966
2N9&7
2Nl014
2Nl067
OutMaterial line
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Si
9
9
9
YCB
YEB
(voltS) (volts)
-12
-12
-15
Ie
PT
(amperes) (watts)
-1.25 -0.1
-1.25 -0.1
-2.5 -0.1
9 -12 -2
9 -12 -1.25
9 -12 -1.25
22 -100 -60
5
60
12
-0.1
-0.1
-0.1
-10
0.5
2N2869
2N3053
2Nl068
2Nl069
2Nl070
2Nl092
Si
Si
Si
Si
5
2
2
3
60
60
60
60
2N1169
2N1170
2N1213
2N1214
2N1215
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
Ge
3
3
3
3
3
25
40
-25
-25
-25
3
3
4
4
6
-25 -1
-20 -20
-24 -0.5
-24 -0.5
-30 -1
-0.100
-0.4
-0.010
-0.010
-0.100
11
11
11
13
60
100
60
100
-34
60
100
60
100
-0.5
6
6
6
6
-0.010
75
75
75
75
0.080
15
15
15
15
75
25
25
25
25
-16
200
200
200
200
85
2N1487
2N1488
2N1489
2N1490
2N1638
1
13
1
19
19
-34
-34
-34
60
100
-0.5
-0.5
-0.5
12
12
-O.OlD
-0.010
-0.010
3
3
0.080
0.080
0.080
40
40
75
75
75
35
35
-16
-16
-16
15
15
85
85
85
200
200
2N1638
2N1638
2N1638
2N1485
2N1486
Si
Ge
Ge
16
9
19
9
1
25
-25
60
20
-35
0.2
1
-0.1
0.1
2.5 40
0.1
0.15
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40
20
20
25
40
0.025
-10
3000
5
12
175
100
200
100
100
2Nl179
2N1701
2N2898
Si
2N2899
Si
2N2900
Si
3746
Ge
3907/2N404 Ge
16
16
16
14
3
120
7
140
7
60
7
-34 -0.5
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1
1
1
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-0.2
40
60
50
0.002
0.01
0.05
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-5
200
200
200
85
85
2N1216
2N1319
2N1425
2N142&
2N1450
2N1511
2N1512
2N1513
2N1514
2N1633
2N1634
2N1635
2N1636
2N1768
2N1769
2N2206
2N2273
2N2339
2N2482
2N2873
Si
Si
Si
Si
Ge
Ge
Ge
Ge
Si
Si
Si
Ge
11
12
1.7
9
12
25
40
-1
-1
-1
3
-1
40
3
-0.1
1.5
4
4
0.5
0.4
0.12
0.4
0.12
-0.100 0.075
-0.100 0.075
--0.100 0.075
1.8
1.8
1.8
0.080
0.15
30
2N3262
2N1489
2N1702
335
Silicon Rectifiers
rectifiers are essentially
S ILICON
cells containing a simple p-n
junction. As a result, they have low
resistance to current flow in one
(forward) direction, but high resistance to current flow in the opposite
(reverse) direction. They can be
operated at ambient temperatures up
to 200 degrees centigrade and at current levels as high as hundreds of
amperes, with voltage levels as high
as 1000 volts. In addition, they can
be used in parallel or series arrangements to provide higher current or
voltage capabilities.
Because of their high forward-toreverse current ratios, silicon rectifiers can achieve rectification efficiencies close to 99 per cent. When
properly used, they have excellent
life characteristics which are not
affected by aging, moisture, or temperature. They are very small and
light-weight, and can be made impervious to shock and other severe
environmental conditions.
THERMAL CONSIDERATIONS
Although rectifiers can operate at
high temperatures, the thermal capacity of a silicon rectifier is quite
low, and the junction temperature
rises rapidly during high-current
operation. Sudden rises in junction
temperature caused by either high
currents or excessive ambient-temperature conditions can cause failure.
(A silicon rectifier is considered to
have failed when either the forward
voltage drop or the reverse current
has increased to a point where the
crystal structure or surrounding material breaks down.) Consequently,
temperature effects are very important in the consideration of silicon
rectifier characteristics.
REVERSE CHARACTERISTICS
When a reverse-bias voltage is applied to a silicon rectifier, a limited
amount of reverse current (usually
measured in microamperes, as compared to milliamperes or amperes of
forward current) begins to flow. As
shown in Fig. 158, this reverse current flow increases slightly as the
bias voltage increases, but then tends
VOLTAGE
0
- -IJIA AT 250 C
-IOOpA AT 1500 C
Figure 158.
Typical reverse characteristics.
to remain constant even though the
voltage continues to increase significantly. However, an increase in operating temperature increases the
reverse current considerably for a
given reverse bias.
At a specific reverse voltage (which
varies for different types of diodes),
It very sharp increase in reverse current occurs. This voltage is called
the breakdown or avalanche (or
zener) voltage. In many applications,
rectifiers can operate safely at the
avalanche point. If the reverse voltage is increased beyond this point,
however, or if the ambient temperature is raised sufficiently (fQr ex-
RCA Transistor Manual
336
ample, a rise from 25 to 150 degrees
centigrade increases the current by
a factor of several hundred), "thermal runaway" results and the diode
may be destroyed.
FORWARD CHARACTERISTICS
A silicon rectifier usually requires
a forward voltage of 0.4 to 0.8 volt
(depending upon the temperature
and the impurity concentration in
the p-type.and n-type materials) before significant current flow occurs.
As shown in Fig. 159, a slight rise
in voltage beyond this point increases the forward current sharply.
Because of the small mass of the silicon rectifier, the forward voltage
drop must be carefully controlled so
that the specified maximum value of
dissipation for the device is not exceeded. Otherwise, the diode may be
seriously damaged or destroyed.
. Fig. 159 shows the effects of an increase in temperature on the forwardcurrent characteristic of a silicon
200
~
~
~
is reached. PRV ratings range from
about 50 volts to as high as 1000
volts for some single-junction diodes.
As will be discussed later, several
junction diodes can be connected in
series to obtain the PRV values required for very-high-voltage powersupply applications.
Because the current through a rectifier is normally not dc, current ratings are usually given in terms of
average, rms, and peak values. The
waveshapes shown in Figs. 160 and
161 help to illustrate the relationships among these ratings. For example, Fig. 160 shows the current
variation with time of a sine wave
t~~.
*.31
a
631
5.0
-1.5
.
-IO.O'------.J'----=T~IM-=E:----"'....."'--...J
Figure 160.
Variation of current of a sine
wave with time.
that has a peak current Ioeak of 10
amperes. The area under the curve
can be translated mathematically
into an equivalent rectangle that indicates the average value Ia. of the
sine wave. The relationship between
the average and peak values of the
total sine-wave current is then given
by
150
100
50
VOLTS
Figure 159. Typical forward characteristics.
rectifier. In certain applications, close
control of ambient temperature is required for satisfactory operation.
Close control is not usually required,
however, in power circuits.
RATINGS
Ratings for silicon rectifiers are
determined by the manufacturer on
the basis of extensive reliability testing. One of the most important ratings is the maximum peak reverse
voltage (PRV), i.e., the highest
amount of reverse voltage which can
be applied to a specific rectifier before the avalanche breakdown point
Iav
or
= 0.637 Ioea.
= 1.57 I
I peak
a•
However, the power P consumed
by a device (and thus the heat generated within it) is equal to the
square of the current through it
times its finite electrical resistance
R· (i.e., P
PR). Therefore, the
power is proportional to the square
of the current rather than to the
peak or average value. Fig. 161
shows the square of the current for
the sine wave of Fig. 160. A horizontal line drawn through a point halfway up the P curve indicates the
average (or mean) of the squares,
and the square root of the P value
=
337
Silicon Rectifiers
ow
a:
e ••
('If"/2) I.v = 1.57 I.v
(2/ 'If") I,m. = 0.64 I,m.
2 Irm.
0.5 I.e ••
=
=
=
For different combinations of rectifier cells and different circuit con-
figurations, these relationships are,
of course, changed again. Current
(and voltage) relationships have
been derived for various types of
rectifier applications and are given
in Table I later in this section.
Published data for silicon rectifiers
usually include maximum ratings
for both average and peak forward
current. As shown in Fig. 162, the
maximum average forward current
is the maximum average value of
current which is allowed to flow in
the forward direction during a full
ac cycle at a specified ambient or
case temperature. Typical average
current outputs range from 0.5 ampere to as high as 100 amperes for
single silicon diodes. The peak
recurrent forward current is the
maximum repetitive instantaneous
forward current permitted under
stated conditions.
- - - SURGE OR FAULT CURRENT
- -
Figure 162.
-
- - -
PEAK REPETITIIIE
CURRENT
- AIlERAGE FORWARD
CURRENT
Representation of rectifier
currents.
In addition, ratings are usually
given for non-repetitive surge, or
fault, current. In rectifier applications, conditions may develop which
cause momentary currents that are
considerably higher than normal
operating current. These increases
( current surges) may occur from
time to time during normal circuit
operation as a result of normal load
variations, or they may be caused
by abnormal conditions or faults in
the circuit. Although a rectifier can
usually absorb a limited amount of
additional heat without any effects
other than a momentary rise in junction temperature, a sufficiently high
surge can drive the junction temperature high enough to destroy the
rectifier. Surge ratings indicate the
amount of current overload or surge
that the rectifier can withstand without detrimental effects.
Fig. 163 shows universal surge
RCA Transistor Manual
338
rating charts for families of rectifiers having average current ratings
up to 40 amperes. The rms currents
shown in these charts are incremental values which add to the normal
rms forward current during surge
periods. The charts indicate maximum current increments that can be
safely handled by the rectifiers for
given lengths of time. These charts
can be used by designers to determine whether circuit modifications are necessary to protect the
rectifiers. If the value and duration
of expected current surges are
greater than the ratings for the rectifier, impedance should be added to
capacitive-load circuits or fuses or
circuit breakers to variable-load circuits for surge protection.
The fusing requirements for a
10000
....
8
6
4
~
N
...... ...... 1"- i'......
...... ...... 1'12A
-2 ......
100
8
6
4
5A
~
I.
40A
35A
V
kl><
I II
I III
20A
i'...
r-...
i'-
tl"-
. . . r--I"-
0.5 A
:-...
r--
2
r-.
10 2
106
4 6~5 2 4 6~04 2 4 6~3 2 4 61~2
SURGE DURATION-SECONDS
given circuit can be determined by
use of a coordination chart such as
that shown in Fig. 164. Two characteristics are plotted on the coordination chart initially: (A) the surge
rating curve for the rectifier, and
UI
::!.., 2 0 0 . . - - - . - - - - . . , . - - - - - - - - ,
0-
:;;
«
I
..,~ 100 D--"~...--_+------___;
~
:>
o
UI
:;;
0::
SURGE DURATION-SECONDS
Figure 164. Typical coordination chart for
determining fusing requirements (A - surgerating chart for 20-ampere rectifier, B expected surge current In half-wave circuit,
C - opening characteristics of protective
device, 0 - resulting sur~e current in
modified circuit).
(B) the maximum surge (fault current) expected in the circuit. In Fig.
164, curve A is the surge rating
curve for a 20-ampere rectifier, and
curve B is the maximum surge expected to occur in a single-phase
half-wave rectifier circuit that has
an input voltage of 600 volts and is
subject to overload conditions in
which the load resistance can decrease to 2 ohms. The maximum rms
current which can flow under these
conditions is given by
Lms
= E'n/2RL = 600/4
= 150 amperes
The incremental portion of this current is determined by subtracting
the normal rms current of the 20ampere rectifier (Lms
1.57 I..
1.57 x 20 = 31.4 amperes; In, •• =
150 - 31.4
118.6 amperes). The
straight line of curve B is then
drawn at an rms value of 118.6 amperes in Fig. 164.
The intersection of curves A and
B indicates that the 20-ampere rectifier can safely support an incremental rms surge current of 118.6
amperes for a maximum duration of
about 40 milliseconds. Therefore, the
circuit must be modified to include
a protective element that has an
=
=
0L:~2t:~4~~6~8~~~
0.01
0.1
SURGE DURATION-SECONDS
Figure 163. Universal surge rating charts
for RCA rectifiers.
=
339
Silicon Rectifiers
"opening" characteristic that falls
below the rectifier surge rating
curve for all times greater than 40
milliseconds. The opening characteristic of such a protective element
is shown in Fig. 164 as curve C.
Surge current in the modified circuit
is then limited by the circuit resistance for periods up to 40 milliseconds and by the protective
element for surges of longer duration, as shown by curve D.
Surge currents generally occur
when the equipment is first turned
on, or when unusual voltage transients are introduced in the ac supply line. Protection against excessive
currents of this type can be provided
in various ways, as will be discussed later.
Because these maximum current
ratings are all affected by thermal
variations, ambient-temperature conditions must be considered in the
application of silicon rectifiers. Temperature-rating charts are usually
provided to show the percentage by
which maximum currents must be
decreased for operation at temperatures higher than normal room temperature (25 degrees centigrade).
OVERLOAD PROTECTION
In the application of silicon rectifiers, it is necessary to guard against
both over-voltage and over-current
(surge) conditions. A voltage surge
in a rectifier arrangement can be
caused by dc switching, reverse recovery transients, transformer switching, inductive-load switching, and
various other causes. The effects of
such surges can be reduced by the
use of a capacitor connected across
the input or the output of the rectifier. In addition, the magnitude of
the voltage surge can be reduced by
changes in the switching elements or
the sequence of switching, or by a
reduction in the speed of current interruption by the switching elements.
In all applications, a rectifier having a more-than-adequate peak reverse voltage rating should be used.
The safety margin for reverse volt-
age usually depends on the application. For a single-phase half-wave
application using switching of the
transformer primary and having no
transient suppression, a rectifier having a peak reverse voltage three or
four times the expected working
voltage should be used. For a fullwave bridge using load switching
and having adequate suppression of
transients, a margin of 1.5 to 1 is
generally acceptable.
Because of the small size of the
silicon rectifier, excessive surge currents are particularly harmful to rectifier operation. Current surges may
be caused by short circuits, capacitor
inrush, dc overload, or failure of a
single cell in a multiple arrangement. In the case of low-power cells,
fuses or circuit breakers are often
placed in the ac input circuit to the
rectifier to interrupt the fault current before it damages the rectifier.
When circuit requirements are such
that service must be continued in
case of failure of an individual diode,
a number of cells can be used in
parallel, each with its own fuse. Additional fuses should be used in the
ac line and in series with the load for
protection against dc load faults. In
high-power cells, an arrangement of
circuit breakers, fuses, and series resistances is often used to reduce the
amplitude of the surge current. Fusing requirements can be determined
by use of coordination charts for
the particular circuits and rectifiers
used.
SERIES AND PARALLEL
ARRANGEMENTS
Silicon rectifiers can be arranged
in series or in parallel to provide
higher voltage or current capabilities, respectively, as required for
specific applications.
A parallel arrangement of rectifiers can be used when the maximum
average forward current required is
larger than the maximum current
rating of an individual rectifier cell.
In such arrangements, however,
some means must be provided to assure proper division of current
340
through the parallel rectifier cells.
Parallel rectifier arrangements are
not in general use. Designers normally use a polyphase arrangement
to provide higher currents, or simply substitute the readily available
higher-current rectifier types.
Series arrangements of silicon rectifiers are used when the applied reverse voltage is expected to be
greater than the maximum peak reverse voltage rating of a single silicon rectifier (or cell). For example,
four rectifiers having a maximum
reverse voltage rating of 200 volts
each could be connected in series to
handle an applied reverse voltage of
800 volts.
In a series arrangement, the most
important consideration is that the
applied voltage be divided equally
across the individual rectifiers. If the
instantaneous voltage is not uniformly divided, one of the rectifiers
may be subjected to a voltage greater
than its specified maximum reverse
voltage, and, as a result, may be destroyed. Uniform voltage division
can usually be assured by connection
of either resistors or capacitors in
parallel with individual cells. Shunt
resistors are used in steady-state
applications, and shunt capacitors in
applications in which transient voltages are expected. Both resistors and
capacitors should be used if the circuit is to be exposed to both dc and
ac components. When only a few
diodes are in series, mUltiple transformer windings may be used, each
winding supplying its own assembly
consisting of one series diode. The
outputs of the diodes are then connected in series for the desired voltage.
RCA rectifier stacks (CRI0l,
CR201, and CRgOI series) are designed to provide equal reverse voltage across the individual rectifier
cells in the assembly under both
steady-state and transient conditions. The CRI0l and CRgOI series
stacks include an integral resistancecapacitance network to equalize the
reverse voltage across the series-
RCA Transistor Manual
connected rectifier cells. The CR201
series stacks use precisely matched
rectifier cells for internal voltage
equalization. Extended life tests have
shown that these rectifier stacks are
capable of operating for many thousands of hours without noticeable
degradation of performance.
CIRCUIT FACTORS
The current and voltage relationships for silicon rectifiers vary for
different types of circuit configurations. The particular circuit in which
a rectifier is used is chosen on the
basis of the requirements for a specific application.
Silicon rectifiers are used in a continually broadening range of applications. Originally developed for use in
such equipment as dc-to-dc converters, battery chargers, mobile power
supplies, transmitters, and electroplating devices, silicon rectifiers are
also used in power supplies for radio
and television receivers and phonograph amplifiers, as well as in such
applications as in-line-type modulators, hold-off and charging diodes,
pulse-forming networks, and brushless alternators. They are also being
used in many aircraft applications
because of their small size, light
weight, and high efficiency.
The most suitable type of rectifier
circuit for a particular application
depends on the dc voltage and current requirements, the amount of
rectifier "ripple" (undesired fluctuation in the dc output caused by an
ac component) that can be tolerated
in the circuit, and the type of ac
power available. Figs. 165 through
171 show seven basic rectifier configurations. (Filters used to smooth
the rectifier output are not shown for
each circuit, but are discussed later.)
Figs. 165 through 171 also include
the output-voltage waveforms for the
various circuits and the current waveforms for each individual rectifier
cell in the circuits. Ideally, the voltage waveform should be as flat as
possible (i.e., approaching almost
pure dc). A flat curve indicates a
Silicon Rectifiers
341
peak-to-average voltage ratio of one.
In the case of the current waveform, the smaller the current flowing
through the individual rectifier, the
less chance there is for malfunction
or burnout of the cell.
The half-wave single-phase circuit
shown in Fig. 165 delivers only one
pulse of current for each cycle of ac
input voltage. As shown by the current waveform, the single rectifier
cell is exposed to the entire current
+
Eav
+
Eav
OUTPUT
VOLTAGE
.roM-
Figure 166.
OUTPUT
~
...8.
RS IN OHMS
.....
~
D2
05
I
~
2
5
I
10
2
5
H
Io
30
100
3.14
I
100
Figure 175.
Relationship of peak, avera~e, and rms rectifier currents in
capacitor-input circuits.
is not fully satisfied, the use of Fig.
176 merely indicates a higher peak
and higher rms current than will
actually flow in the circuit, i.e., the
rectifiers will operate more conservatively than calculated. As a
result, this simplified solution can
be used whenever a rough approximation or a quick check is needed
on each cycle.)
In many silicon rectifier circuits,
R. may be neglected when compared
with the magnitude of R L • In such
circuits, the calculation of rectifier
currents is simplified by use of Fig.
176, which gives current ratios under the limitation that R./RL approaches zero. Even if this condition
8
6
4
Io
en
o
2
/
fi11:10 2
I-
z
11.1
II:
II:
Iav
/1
.Lpeak
Iav
8
6
4
I
2
~
II:
11.110
iL 8
;::
6
l;l
4
./
I-
II:
II rms
:Irms
Iav
I-
2
10-1 2
4 68 1
2
4 68 10
"..-
--
II
Ipeak
::>
u
1000
4 68102 2
III
4 68
103
2
4 68 104
EFFECTIVE RATIO OF RESISTIVE TO CAPACITIVE IMPEDANCE (nwCR)
Figure 176.
Forward-current ratios for rectifiers in capacitor-input circuits
in which R. is much less than 1/ C.
RCA Transistor Manual
348
on whether a particular rectifier will
fit a specific application. When more
exact information is needed, the
chart of Fig. 175 should be used.
Average output voltage Ea. is another important quantity in capacitor-input rectifier circuits because
it can be used to determine average
output current Ia •• The relationships
between input and output voltages
for half-wave, voltage-doubler, and
full-wave circuits are shown in Figs.
177, 178, and 179, respectively. Fig.
180 shows curves of output ripple
voltage (as a percentage of Ea.) for
all three types of circuits.
The following example illustrates
the use of these curves in rectifiercurrent calculations. Both exact and
approximate solutions are given.
For the half-wave circuit of Fig.
173a, the resistive-to-capacitive reactance CoICRL is given by
CoICRL 2". X 60 x 2.5 x 10'" x 200,000
= 189
For an exact solution using Fig. 175,
the ratio of R. to RL is first calculated as follows:
R.
150
RL - 200,000
0.075
=
=
200
I-
:5
0
.I
.25
180
.5
.75
1.0
1.5
2
0
I\::
U
z 160
III
:J
III
3
j
0
c 140
4
5
6
7
8
I
I&J
III
~
g
120
10
12
15
20
10
100
.. CRL (C IN FARADS, RL IN OHMS)
Figure 178. Relationship of applied ac
peak voltage to dc output voltage in capacitor-input voltage-doubler circuit.
The values for CoICR,. and R./RL are
then plotted in Fig. 177 to determine
the average output voltage Ea. and
the average output current In. as
follows:
=
=
=
= Ea./R
= 4850 volts/200,000
E •• /E •• a•
98 per cent
En.
0.98 x 4950
4850 volts
Ia.
I..
L
= 24.2 milliamperes
ohms
This value of Ia. is then substituted
in the ratio of I. m .II•• obtained from
Fig. 175, and the exact value of rms
current I. m • in the rectifier is determined as follows:
I.m./I•• = 4.4
I. m •
4.4 x 24.2
=
O~~~~~~~~~~~~
QI
10
100
1000
wCRL (C IN FARADS,R L IN OHMS)
Figure 177. Relationship of applied ac
peak voltage to dc output voltage in halfwave capacitor-input circuit.
= ~07 milliamperes.
For a simplified solution using
Fig. 176, it is assumed that the average output current Ia. is approxi;nately equal to the peak input voltnge E p • a' divided by the load resistance R L , as follows:
Ia.
Ia.
= 49501200,000
Ep.a./RL
=
= 24.7 milliamperes
349
Silicon Rectifiers
1001---I----T---::::;;;;;:::F==--~.05.1
.5
I
2
90
4
6
8
10
12.5
15
l-
S
a:: 80
U
0
'"~
~
I
..J
..J
::l
70
0
60
...
...a::
%RS/RL"
25
30
35
40
0
'""->
'"~"
20
50
50
60
70
80
90
100
40
30C:J3J::iII:w::L~.LJ..Ll...l.llilL-L.Jw.l.JJJJL..L...WJ-LLJJJ
~
ill
100
10011
.. CR L (C IN FARAOS,R L IN OHMS)
Figure 179.
Relationship of applied ac peak voltage to dc output voltage
in full-wave capacitor-input circuit.
CIRCUIT
PARAMETER
~
A %~S/RL
HALF-WAVE
'-0.1
==jQl.O
----30
--0.1
,
WLTAGE-DOUBLER ,
~-IO
>
'""
,,0.1
,-10
--10
__
30
FULL-WAVE
~
I
A
'"~
~
g
'"
..J
0..
0..
iE
I-
::l
0..
I;
o
1000
",CR L (C IN FARADS,
Figure 180.
RL IN OHMS)
RMS ripple voltage in capacitor-input circuit.
350
RCA Transistor Manual
-;
I400
eRIOI
I
11.1800
CRI02
I I
CRI03
Go
c
iJi
11.1
- f-
~
C~'O~ 8105
)-600
CRI06
~
~
I- -
~
'\
~
-
!Z
::1It: 400
--
B
11.1
Sl
CR201 TO 212
r
r-
-
- ~
15200
~
,
~-
r\
CRI07 TO 110
It:
-
I-
-
-
I - I200~
c-
-
l-
i
0
-60
-40
x
III
11.1
- -I - IOOO~
~
-1- \~ - - - 800 cz>It:
~
\- - 1-
~~
~~
- -
~~
" ~~l
--
x
I
c(
- I -I -
-- -
:e
~
~
-;
- f- I-
-20
0
20
40
60
80
AMBIENT TEMPERATURE-oC
-' e100
- 600
!ZIII
It:
It:
::;)
-- 400 ~
::I!
,-
It:
r- 200
~f
::I!
i
x
c(
o
:e
120
Figure 181. Current-temperature ratings for silicon stack rectifiers.
This value of I.. is then substituted
in the ratio of I,m./I •• obtained from
Fig. 176, and the approximate mis
current is determined, as follows:
==
I,m./I••
5.7
I,m.
5.7 x 24.7
= 141
milliamperes
Current-versus-temperature ratings
for rectifiers are usually given in
terms of average current for a resistive load with 60-cycle sinusoidal
input voltage. When the ratio of
peak-to-average current becomes
higher (as with capacitive loads),
however, junction heating effects become more and more dependent on
rms current rather than average current. Therefore, capacitive-load ratings should be obtained from a curve
of rms current as a function of temperature. Because the ratio of rmsto-average current for the rated
service is 1.57 (as shown by I,m./I••
at low wCR on Figs. 175 and 176),
the current axis of the average-current rating curves for a sinusoidal
source and resistive load can be multiplied by 1.57 to convert the curves
to rms rating curves. Fig. 181 shows
an example of this conversion for
RCA stack rectifier rating curves.
HEAT SINKS
Silicon rectifiers are often mounted
on devices called "heat sinks". A
heat sink generally consists of a relatively large metal plate attached to
the heat-conducting side of the rectifier. Because of its large surface, a
heat sink_ can readily dissipate heat
and thereby safeguard the rectifier
against damage.
The size of a heat sink for a given
rectifier application depends upon the
ambient temperature and the maximum average forward current of the
rectifier. As a result, the actual size
must be calculated for each application which involves an ambient temperature or forward current other
than that recommended by the manufacturer. For this calculation, two
charts are used: the current-multiplying-factor chart shown in Fig.
182, and the heat-sink cooling chart
shown in Fig. 183. Fig. 182 applies to
all rectifier types for both polyphase
and dc operation; Fig. 183 differs for
different rectifier types.
The cakulation requires four steps:
1. From Fig. 182, the current-multiplying factor is determined for the
applicable conduction angle ~i.e., the
351
Silicon Rectifiers
HEAT-SINK COOLING CHART
FOR DC OPERATION USE MULTIPLYING
FACTOR-O.S
5
40
'"
4\
"r'\. "'2
.I
I
60
35
""-
""-
".........
~
1\
\
I\.
~
\
\
92CS-I0910T
1\ i\~
\
\,..I-,-_.-m'
HEAT
SINK
:~:g PIA.
.210
1
.641
.609
J
.l70~
t.15
.030
MAX.
00-:g~DlA.
~O
MIN.
27 (3-Lead)
3 LEADS
27 (3-Lead With Heat Sink)
RCA Transistor Manual
386
Outlines (cont'd)
1.41 R.±.OOT
BOTH ENDS
\... 2 MOUNTING
HOeES
L·
::;;DIA.
I
S45R•
.075
.095
28
T7@
1 :=D~·I
~ )~J:U-r,
.035
.015
..n
2I.EADS/-
:&f~ DIA.
D
.;f~'l,
~o@o
I \ \
~
INSULATING
MATERIAL
1.e)!5
.985
--r
CASE TEMPERATURE
REFERENCE ZONE
GATE
29
31 (Press Fit)
30
i
.562
.552
. (SO
1500·.000
I
4
--i-.-
=w
CATHODE
SYMBOL
(SEE NOTE)
~f
t
,4~2.
.422
ANODE
I
1
-,=
.oz7~
.055
DIA.
NOTE:
32
33
'-lX.
.405
ANODE
1.4
TERMINAL4~·
~
I GeASS
NSULATION
.155-.159 DlA.
~ROW
INDICATE~III£CTION
fORWARD CUR ENT AS
INDICATED BY DC: AMMETER
MAX. DIA.
27-.Q55.
34
2
L~tDS
Outlines
387
Outlines (cont'd)
€1
CATHOOIE ___
.1
T£RMIN~Al.-'
~.
COLOR DOT
ADJACENT TO
CATHODE LEAO
--f
I
.405
POLARITY
SEATING PLANE
-+
SYMBOL
(SEE NOTEl
METAL CASE
MAX.
WITH
INSULATING
SLEEVE
ANODE
1.4
~.
TERMINAL
'
~
GLASS
INSULATION
.240
MAX. CIA.
.135-.139 OIA.
~'NSULATION
.021-.036
alA.
2 lEADS
~~:: =~.r.'
35
alA.
36
-1
.66rYIN.
.6B7MAX.
Outline
No.
39a
39b
1
3ge
39d
3ge
39f
39g
39h
39i
39j
38
39
Outline
~
40a
40b
40e
40d
40e
40f
40g
UA"
·'B"
(Inches)
%----·--2-
%
%
41,~
'Y.
4%
~
~
~
3~
3~
3~
4%
RCA Transistor Manual
388
Outlines (cont'd)
Outline "Au "B" "C"
(Inches)
No.
4i& 2% 5% 2
2
2% 7
Ub
2
41e
2% 8%
2
2% 10%
41d
2
41e
2% 12%
2
2% 14
4lf
2
2% 15%
411
2
2% 5%
41h
2
2% 7
4li
2
4lj
2% 8%
2
2% 10¥~
4lk
2
2% 12%
411
2
2% 14
4lm
2
2% 15%
41n
3
7%
3%
410
41p
3%
3
9%
I
Outline "AU "B" I·C"
(Inches)
No.
41q
Ur
41.
4lt
4lu
4tv
4lw
41x
41y
41z
41aa
41bb
41ee
41dd
4lee
41ft
I
J30-.115
.130-.115
TOTALaWIOTH
TOTAl.aWIDTH
ALIGNMENT
=R.
rou:RAN<:£
~L------=:>'4-"'"
ALIGNMENT
NCE
TOI.Er.
L-________
)
L
L
,
r::
1.095-.085
L:""OO7-.00.
I~DIA.
.270-.230
CATHODE
~O7-.003
ANOOE
"L:.Q07-.00.
~R.
~~~
ANODE
"I
*
CERAMIC
:%f8
~
CYLIlJlOER
Il~ I ~
/l095-~
POLARITY D.IA.
SYMBOL (SEE NOTE)
POLARITY
SYMBOL (SEE NOTE)
42
"
]1
1
MEDIUM CAP
_EDEC No. CI-5.-~"'==L_...,
MEDIUM CAP
..cEC No. CI-I
&.DO
43
ID
'I
ID
MEDRJM
JEDEC
No.CAP
CI-5
U5
UMEDIUM_SHEU.
SMALL 4-PIN
WITH BAYONET
ME':::~~ELL
JUMBO 4-PIN
J~grc:~":It ~~;=~~tl-~-. ~~J
DIA.
44
NOTE: ARROW INDICATES OIRECTION
OF FORWARD CURRENT AS
INDICATED BY DC AMMETI!R
45
46
389
Mounting Hardware
TO-60
"Flange-Type TO-S·
g
/INSULATOR
KSSSSSSSSSS$!
tlEATSINK
ISSSlbs"SIISS9
i :
u
111''''0''
11- NI.I9D)
.f6IA
.CA
000
IC!,==:::::':::::';:,::;,=t:~:::::;j'rER
65,SS1
If
15S5Sq
I
I
ed 3
turns from bottom (term.
4) tunes with 100-pF
capacitance at 990 kc/s;
secondary,
10
turns;
wound from Hy. Poly
wire (no outer insulation) on slug (Arnold
"E" or equiv.) 0.375 inch
long and 0.181 inch in
diameter
R" R. = 47000 ohms, 0.5
watt
R2, R.a-2200 ohms, 0.5 watt
R3-470 ohms, 0.5 watt
R5-4700 ohms, 0.5 watt
Ro
0.22 megohm, 0.5 watt
R. = 10000 ohms, 0.5 watt
Ro
270 ohms, 0.5 watt
R.
potentiometer, 10000
ohms, 0.5 watt, audio
taper
RlO = 56000 ohms, 0.5 watt
Rn = 18000 ohms, 0.5 watt
R12
820 ohms, 0.5 watt
R •• = 330 ohms, 0.5 watt
R,. = 8200 ohms, 0.5 watt
=
==
=
R •• = voltage-dependent resistor, Ferroxcube No.
E299DD-P340 or equiv.
R,.
250 ohms, 4 watts
8. = ON-OFF switch, single-pole, single-throw
Tl = if transformer (includes C. and C.), primary, 286 turns of No. 36
Gripeze wire tapped at
127 turns from bottom
(term. 3): secondary, 286
turns of No. 36 Gripeze
wire tapped at 8 turns
from bottom (term. 2).
To = if transformer; primary (includes C12), 230
turns of No. 3/42 Litz
wire tapped at 110 turns
from bottom (term. 3);
secondary, 17 turns of No.
3/42 Litz wire.
To = audio output transformer; primary, 2500
ohms;
secondary,
3.2
ohms; Triad No. 8-12X
or equiv.
=
'400
RCA Transistor Manual
12-4
HIGH-QUALITY FM TUNER
FOR MULTIPLEX RECEIVER
g'~/
/ \
r- ------,----\
-8 VOLTS
TO BASE OF
IF AMPLIFIER
TRANSISTOR
TO AGC
CIRCUIT IN
IF AMPLIFIER
-8 VOLTS
Parts List
c,.approximately
C. = trimmer capacitor.
17 pF max-
imum
C,, Co. Coo
ganged tuning
capacitor; C.. Co
7.25
to 19 pF. Coo = 6 to 21 pF
C.
6.8 pF. cera~c
e. 15,pF. ceranuc
CG. Co. C•• C16. C19
feedth:l'ough capacitor. 1000 pF
C10
3.3 pF. ceramic
C11 == 12 pF. ceramic disc
C... C..
4.7 pF, ceramic
C..
0.33 pF.
C,.
15 pF. z.ero temperature coefficient. NPO ceramic
Cn
trimmer capacitor.
1.5 to 10 pF
Cto
240 pF. ceramic disc
Cn = 0.005 p,F. ceramic disc
85.6 pF (part of T,)
C..
Co.
39.3 pF (part of T,)
C.. = 1000 pF (part of T,)
e... e... e81. e... Css. c...
C.. = 0.01 p,F. ceramic disc
C... C.7. C..,. C.. = 0.05 p,F.
ceramic disc
Css. CO2 = part of To
Coo == 5.6 pF. NPO disc
C.. = 10 p,F. electrolytic.
10 V
C.. == 5 pF. NPO disc
C.. = feedthrough capacitor 1000 pF
C••• C.. == part of T.
C.,. C... C.. = part of T.
e.7. C.o = part of TG
e.. == 1000 pF. ceramic disc
Coo. COl = 330 pF. mica
eo. 5 p,F. electrolytic. 10 V
L:t = antenna coil; secondary. 4 turns of No. 22 bare
tinned wire. approxi-
=
==
=
=
=
=
=
=
=
=
=
=
=
=
mately 1 wire diameter
.apart. wound on Oak antenna coil form. resonates
with 27-pF capacitance at
100 Mc/s. tuning slug is
an Arnold "J" (0.181 inch
in diameter and 0.250 inch
in length) or equiv.; primary. center-tapped. approximately 4 turns of
No. 30 gripeze wire wound
below cold end of secondary (primary winding
may have to be shortened
slightly to obtain optimum impedance match)
L. == rf interstage coil; approximately 3-% turns of
No. 18 bare tinned wire
wound on a o/ts-inchdiameter coil form (remove coil 'form after
winding) tapped approximately % turn from the
cold end; exact winding
length
depends
upon
tracking
requirements;
coil should resonate with
27 -pF capacitance at 100
Mc/s
La == rf choke. 1 p,F
L. == oscillator coil; approximately 3-~!. turns of
No. 18 bare tinned wire
wound on a %2-inchdiameter coil form (remove coil form after
winding); exact winding
length depends on tracking requirements; coil
resonates with 37-pF capacitance at 110.7 Mc/s
Rl
47000 ohms. 0.5 watt
R.
2200 ohms. 0.5 watt
=
=
Ra. R13. Ra. == 330 ohms. 0.5
watt
R•• R.
4700 ohms. 0.5 watt
Rs == 8200 ohms, 0.5 watt
R. = 1200 ohms. 0.5 watt
Rs
12000 ohms. 0.5 watt
Ro. Ra7 == 1000 .ohms. 0.5
watt
R,o. R,o. Roo. Rm. == 3300
ohms. 0.5 watt
R11. R'G = 100 ohms. 0.5
watt
R12. R16. RaG. Roo = 560 ohms.
0.5 watt
R14. R... Rss. R •• == 240 ohms.
0.5 watt
R17
0.68 megohm. 0.5 watt
R18 = 0.1 megohm. 0.5 watt
Roo == 8200 ohms. 0.5 watt
Rm.
10000 ohms. 0.5 watt
R .. == 20000 ohms. 0.5 watt.
a.. 220 ohms. 0.5 watt
Roo. R ..
0.47 .megohm. 0.5
watt
R02
470 ohms. 0.5 watt
RaG == 68 ohms. 0.5 watt
Rss
1500 ohms. 0.5 watt
Rss. Roo == 6500 ohms. 0.5
watt
R40
100 ohms. 0.5 watt
S,-AFC ON-OFF switch.
single-pole. single-th:l'ow
Tl-if transformer. ThomasRamo-Wooldridge No.
EO-18896. Automatic Mfg.
Co. No. EX-11831. or
ell.uiv.
To-If transformer. ThomasRamo-Wooldridge No.
EO-18897. Automatic Mfg.
Co. No. EX-11832. or
equiv.
=
=
=
=
= =
=
=
=
Circuits
401
HIGH-QUALITY FM TUNER (cont'd)
12-4
AGC VOLTAGE
•
IF AMPLIFIER STAGES
TO
BASE OF
RF AMP.
TRANSISTOR
C33
I
-
+
~R20
'?
C34
~--~~--~--.--,
TO TI
SECONDARY
-6.5 V
=
RII
*C25
AFC VOLTAGE
•
TO COLLECTOR
OF OSCILLATOR
TRANSISTOR
IF AMPLIFIER STAGES
RATIO DETECTOR
TO
MULTIPLEX
ADAPTER
Parts List (cont'd)
To--if transformer. Thompson-Ramo-Wooldridge No.
EO-18898. Automatic Mfg.
Co. No. EX-11833. or
equiv.
T.-if transformer. Thompson-Ramo-Wooldridge No.
EO-18900. Automatic Mfg.
Co. No. EX-118M. or
equiv.
T<>-ratio-detector t ran s former. Thompson-RamoWooldridge No. EO-16786H2. Automatic Mfg. Co.
No. EX-11633. or equiv.
equiv.
NOTE: See general considerations for construction of high-frequency and hroadhand circuits
on pap 391.
RCA Transistor Manual
402
HIGH..QUALITY FM TUNER (cont/d)
12-4
Circuit Description
This high-quality FM tuner uses and thus increases conversion gain.
silicon n-p-n transistors that pro- The 40244 oscillator stage is advide good receiver quieting and justed to provide a uniform injeclimiting performance because of tion voltage to the base of the mixer
their high usable gains and low noise transistor over the entire FM oscillevels (typical device noise is 3 dB lator-frequency range.
at 100 Mc/s for a 300-ohm source
The four-stage if-amplifier strip
impedance). These transistors pro- uses two 40245 and two 40246 tranvide excellent amplification in the sistors in a common-emitter circuit
FM band and are capable of sus- configuration to provide 23.4 dB of
tained oscillation at frequencies up stable gain per stage.. The four
double-tuned if transformers T " T.,
to 1100 Mc/s.
The rf-amplifier stage uses a Ta, and T. provide a 6-dB bandwidth
40242 transistor in a common-emitter of 300 kc/s, which is adequate for
circuit configuration to obtain the reproduction of stereo signals.
highest stable gain over the entire
The agc voltage is developed at
FM broadcast frequency range. This the collector of the second if-amplistage can provide an unneutralized fier transistor by a 1N542 diode; and
gain of 15.4 dB. The operating point is applied to the base of the 40242
of the stage is chosen so that agc rf-amplifier transistor. As a result,
can be applied effectively.
the final 40246 if-amplifier transisThe 40243 mixer transistor is also tor can go into full limiting before
operated in a common-emitter con- appreciable agc is developed. This
figuration. An oscillator-signal in- arrangement provides a relatively
jection voltage of approximately 90 wide agc bandwidth which is helpful
millivolts is coupled across capaci- in tuning to strong signals.
FM detection is accomplished by
tor Cl l to the base· of the mixer transistor from the oscillator resonant the ratio-detector circuit, which includes two 1N542 diodes and assocircuit Cu , ClIi , C,S, and L •. A series- ciated components. The detector
tuned trap La and C13 between the transformer T. is designed to probase and emitter of the mixer tran- vide the wide peak-to-peak separasistor reduces degeneration at the tion (450 kc/s) required for good
intermediate frequency of 10.7 Mc/s stereo multiplex operation.
12-5
FM STEREO MULTIPLEX ADAPTER
Parts List
c,
=
0.33 pF. fixed composition
Cs. Cu. C12 = 0.05 J1.F. disc
ceramic
C.
560 pF. mica
C. = 0.01 J1.F. ceramic
C.
1000 pF. part of L.
C.
1000 pF._part of L.
C•• Cs = 10 pF. NPO disc.
C.
1000 pF part of L.
C'0 = 1000 pF. part of L.
C,a
1000 pF. part of T1
C..
2 pF. electrolytic.
12 V.
ClIi
390 pF. part of T.
C,•• Cu. C18. C,.
7500 pF.
mica
Coo. COl
0.02 pF. disc
ceramic
CO2. C.. 1 p.F. disc ceramic
h
incandescent lamP. 14mAo 10-volt
L1
rf coil ThompsonRamo-Wooldridge No.
EO-14039 or equlv.
=
=
=
=
==
=
=
=
= =
=
=
L.
rf coil (includes C.)
Thompson - Ramo - Wooldridge No. EO-15485-Ro or
equiv.
La
rf coil (includes Co)
Thompson - Ramo - Wooldridge No. EO-15486-Ro or
equiv.
L.
rf coil (includes Co)
Thompson - Ramo - Wooldridge No. EO-17558 or
equiv.
L.
rf coil (includes C,0)
Thompson - Ramo-Wooldridge No. EO-17557 or
eqtiiv.
R1
0.12 megohm. 0.5 watt
Ro. R.. RlIi
47000 ohms.
0.5 watt
Ro. R... R.. = 3300 ohms.
0.5 watt
Ro, R... R..
8200 ohms.
0.5 watt
Ro. R18 470 ohms. 0.5 watt
=
=
=
=
=
=
=
R.
= =
180 ohms. 0.5 watt
1000 ohms. 0.5
watt
R.. R'0 = 10000 ohms. 0.5
watt
Rll
120 ohms. 0.5 watt
R12. Ru
560 ohms. 0.5
watt
R,. potentiometer. threshold control, 50000 ohms
R,o = 2200 ohms. 0.5 watt
R,., R..
39000 ohms. 0.5
watt
Rm. R.. potentiometer. 38kc/s and 76-kc/s null
control. 5000 ohms
T1
transformer (includes
C13) Thompson-RamoWooldridge No. EO-15360R. or equiv,
T.
transformer (includes
ClIi) Thompson-RamoWooldridge No. EO-15361Rot or equiv.
Ro. Ru
=
=
=
=
=
=
=
Circuits
12-5
403
FM STEREO MULTIPLEX ADAPTER (cent'd)
COMPOSITE-SIGNAL
AMPLIFIER
19-kc/s
PILOT
SEPARATOR
AMPLIFIER
AND
LIMITER
BALANCED
DOUBLER
TYPE
2NI524
~-~r-------~----4---------~~--------~O-12V
LAMP SWITCH
=
TYPE
IN541
TO LEFTCHANNEL
OUTPUT
.
38-kc/s
AMPLIFIER
AND
LIMITER
TO RIGHTCHANNEL
OUTPUT
.
-12 V
404
72-5
RCA Transistor Manual
FM STEREO MULTIPLEX ADAPTER (cont'd)
Circuit Description
This FM stereo multiplex adapter,
or demodulator, separates composite
multiplex .signals supplied by an FM
tuner, such as that shown by circuit
12-4, into right- and· left-channel
inputs for stereo aUdio-output
stages. The adapter features a high
input impedance, a noise-immunity
circuit, and automatic switching for
stereophonic or monaural reception.
The input to the composite-signal
amplifier is obtained from the ratio
detector in the FM tuner. The amplifier, which is essentially an isolation stage, uses a 2N1524 transistor in an emitter-follower circuit
configuration to provide the highinput-impedance termination necessary to prevent excessive loading of
the ratio detector. The composite
signal is coupled from the emitter
circuit of the amplifier through an
SCA rejection filter (L. and C.) to
the base of a second 2N1524 used in
a pilot-separator stage.
The collector circuit of the pilot
separator consists of a double-tuned,
top - capacitance - coupled, 19 - kcf s
transformer (L2 and L.). This transformer presents a highly selective
load to the 19-kcf s pilot-frequency
component included in the composite
signal. The pilot-separator stage
also acts as an emitter follower for
the composite signal.
The 2N1524 threshold amplifier
and the 2N1632 19-kcf s amplifier
and limiter comprise the noise-immunity circuit. During operation,
reverse bias is applied to the 2N1632
through the threshold potentiometer
R13• When noise or insufficient pilot
is available from the FM detector
(as in the case of a weak station
or of monaural reception), the forward bias developed by the IN295
bias-rectifier circuit is insufficient to
overcome the preset reverse bias on
the 2N1632, and stereophonic switching is not accomplished. The presence
of an acceptable pilot level (one
that does not switch on interstation
noise and yet provides adequate
stereo reception) results in sufficient
forward bias to make the 2N1632
conduct and thus to permit operation of the subcarrier regenerating
stages.
The output of the 19-kcf s amplifier and limiter is coupled by transformer T, to a balanced frequencydoubler circuit. This circuit, which
consists of two 1N295 diodes connected in a full-wave rectifier configuration, doubles the frequency of
the 19-kcf s signal to regenerate the
38-kcfs subcarrier required for detection of the left- and right-channel
information in the composite signal.
The 2N1534 38-kcf s amplifier and
limiter supplies the bias current to
turn on the 2N 408 lamp switch that
indicates stereo operation of the
adapter. The 38-kcf s subcarrier
from the balanced doubler is amplified by the 38-kcf s amplifier and
limiter and applied to the primary
of T 2, and the composite signal from
the emitter of the pilot-separator
transistor is applied to the secondary
center tap of T 2• When a properly
phased regenerated subcarrier is
added to the composite signal, stereo
demodulation is accomplished, and
right- and left-channel information
appears at the respective outputs.
Monaurally transmitted signals
that appear at the emitter of the
pilot separator are applied directly
to the balanced-detector transformer
T. without activating the subcarrier
regenerating stages. The demodulated signal then appears with equal
amplitude in both left and right
channels of the receiver.
405
Circuits
12-6
AMI FM AUTOMOBILE RADIO RECEIVER
Circuit Description
This AM/FM receiver operates
directly from a 12-volt automobile
battery supply. AM or FM operation
is selected by means of switch Sh
A whip antenna picks up both AM
and FM signals transmitted by radio
broadcast stations. (The optimum
antenna length for FM reception is
29 inches.) RF choke L1 presents a
high impedance at FM frequencies
(88 to 108 Mc/s) so that FM signals
cannot enter the AM tuner, but allows signals at AM frequencies (550
to 1600 kc/s) to pass relatively unimpeded. Capacitor C1 provides lowimpedance coupling of FM signals
into the FM tuner, but blocks the
passage of AM signals.
When S1 is in the FM position, the
FM tuner selects the frequencymodulated rf signal from the desired broadcast station, amplifies
this signal, and converts it to the
10.7-Mc/s intermediate frequency.
The 2N1177 rf amplifier and the
2N1179 autodyne converter transistors provide signal-power gains at
the if output frequency of at least
25 dB for input frequencies in the
88-to-108-Mcl s FM band. Ganged
tuning of the rf and converter stages
insures that the local-oscillator frequency tracks the input tuning at
10.7 Mc/s above the center frequency of the FM channel selected.
Trimmer adjustments are provided
by capacitors C" C1S, and C81 and
inductors L2, L., and L.. A 1N295
diode prevents oscillator blocking in
the converter stage and thus extends
the large-signal-handling capabilities of the FM tuner.
The 10.7-Mc/s outpu~ of the FM
tuner is amplified by three 2N1180
tuned if-amplifier stages that provide an over-all signal gain of 69
dB. Good selectivity for FM signals
is provided by four double-tuned
transformers T" T2, T., and T •.
The if strip is also used for AM
operation. At the 262.5-kc/ s inter-
mediate frequency used in AM automobile receivers, two of the 2N1180
if stages provide more than adequate gain. Therefore, the first
2N1180 stage is converted to an AM
converter when Sl is set to the AM
position. This stage and the 2N1637
rf amplifier comprise the AM tuner.
The 262.5-kcl s output from the AM
tuner is amplified by the two remaining 2N1180 if amplifiers and
coupled to the 1N295 AM seconddetector circuit. Selectivity for AM
signals is provided by the 262.5-kc/ s
if transformers T3, T., and T•.
FM if signals are demodulated
and the amplitude distortion is removed in the 1N542 ratio-detector
circuit. A 1N295 AM detector circuit separates the audio signal from
(demodulates) the AM if signal. A
third section of Sl then selects the
audio output from either the FM
ratio detector or the AM detector.
The selected audio output is amplified by 2N591 predriver and driver
stages. The output of these stages
drives a 2N2869/2N301 power amplifier to develop the power necessary to produce the required speaker
output.
The agc network consisting of a
1N295 diode, R26, and C.. develops a
dc bias voltage proportional to the
signal amplitude and applies it to
the base of the 2N1637 transistor
to provide automatic gain control
for the AM receiver. The agc voltage for the FM receiver is developed
by a 1N295 diode circuit and applied
to the base of the 2Nl177 rf transistor. A 1N3182 diode circuit rectifies the signal across the tertiary
(reference) winding of the ratiodetector transformer. The resultant
frequency-sensitive dc voltage, applied to the emitters of the FM converters and rf-amplifier transistors,
provides automatic frequency control (afc) for the FM tuner.
RCA Transistor Manual
406
12-6
AM/FM AUTOMOBILE RADIO RECEIVER (cont'd)
I!>-+-+--+--,Q)
I
I
I
I
_ _ _ _ .J
AFC DIODE
TYPE
IN3182
~
I
I
I
L __
AM
-=-___
- -----
@AMAGe
~-....
@
r-------W------L--------------~--~~~--~@
@+-_ _ _ _ _ _ _ _ _ _ _,-~+-~R~~~---~
L...._ _ _~_ _._::'_J.J AM AGe
Parts List
C, := 18 pF, ceramic disc,
50 V
C. := 5-80 pF, mica, trimmer
C., Co, C,., C.. := 5 pF,
ceramic disc, 50 V
C., ClT, C.. := 6-21 pF, tuning capacitor
C59
C., C18, COl := 1-6 pF, mica,
trimmer
C. = 1.5 pF, ceramic disc,
50 V
Cs CtO C .. e.. c .. Coo C.a :=
0.05 p,F, ceramic disc,
50 V
L.::-_ _ _ _ _--=I.-::.:=~
C. Cn C14 C21 C2. C.. := 0.002
JLF, feedthrough, 50 V
C,. := 55-300
trimmer
pF, mica,
C13 := 390 pF, ceramic disc,
50 V
C16 = 0.005 p.F, ceramic
disc, 50 V
Circuits
407
AMI FM AUTOMOBILE RADIO RECEIVER (conYd)
12-6
@'---,
Parts List (cont'd)
CI.. C..
4 pF. ceramic
disc. 50 V
Coo
330 pF. ceramic disc.
50 V
CO2 =: 2.2 pF. ceramic disc.
50 V
C2.. C2.. C... C.... e... Coo.
c... C.. = 0.01 p.F. ceramic
disc. 50 V
C.. Coo =: part of TI
C.. =: 15 pF. ceramic disc.
50 V
50
pF. ceramic
C.. =: 180 pF. N750 ceramic
C
80 550 F ·
ir~me~
P. mIca.
C.. COl =: part of T2
CO2 Coo CO2 =: part of To
". C•• =: 0.001 .. F. ceramic
C'dIS.
c. 50 V
~
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C""ciiS~:" ,l.3
tuner; 4 turns No. 16 HF
on 0.220-inch form. spaced
%6-inch (approx.); tapped
at 1 turn; core "J" material Arnold Al-336 or
equiv.
L. = antenna coil for AM
tuner; variable inductor;
tunes with 120 pF over
the frequency range from
535 to 1610 kc/s; Qo =: 60
at 1610 kc/s· secondary
L.8
fO: AM tuner;
variable inductor; tunes
with 560 pF over the frequency range from 535 to
1610 kc/s; Qo =: 60 at 1610
kc/s. no secondary
La = rf coil for FM tuner;
same as L2 except has no
tap
L. = miniature radio-frequency choke. 1 p.H (approx.)
L,
oscillator coil for FM
tuner; 3 turns No. 16 HF
on 0.220-inch form. spaced
%,-inch (approx.); core
"J" material Arnold A1336 or equiv.
L.
oscillator coil for AM
tuner; variable inductor;
tunes with 470 pF over
the frequency range from
797 to 1872 kc/s; Qo =: 45
a30t t1u8ms72 kc/s; secondary
L.
filter choke. 125 p.H
(approx.)
RI R12 R..
100000 ohms.
0.5 watt
Ra R.
560 ohms. 0.5 watt
R.
390 ohms. 0.5 watt
&o.~~a~16
33000 ohms.
R.wR27
180 ohms. 0.5
att R<1
~~TIoil
=
RI'Roo 1500 ohms. 0.5 watt
R16 R .. = 2200 ohms. 0.5 watt
RIO R20 = 56011 ohms. 0.5 watt
Roo Ra. =: 18000 ohms.
0.5 watt
R2l. R .. Roo =: 470 ohms.
0.5 watt
Roo = 3900 ohms. 0.5 watt
Roo = 1000 ohms. 0.5 watt
Rat R .. R.., =: 6800 ohms.
0.5 watt
R ..
potentiometer. 100000
=
R~~2g£ ~~~~~~t;-fter
Roo =: 4700 ohms. 0.5 watt
Roo = 3300 ohms. 0.5 watt
Roo =: potentiometer. 250000
ohms. 0.5 watt. audio taper
R .. = 270 ohms. 1 watt
R .. =: 0.47 ohm. '0.5 watt
TI =: FM if transformer;
.Thompson - Ramo - WoolC•• =: 10 p.F. electrolytic.
dridge No. 12224 or Auto25 V
matic Mfg. Co. No. E27C.. c..
part of T.
41353AX or equiv.
C•• = 1800 pF. =: 10%.
T. T.
FM if transformer;
ceramic disc
Thompson - Ramo - WoolC.. C.. =: part of T.
dridge No. 12080R1 or
eo. =: 2 pF. ceramic disc.
Automatic Mfg. Co. No.
50 V
E2741166BX or equiv.
C.. CO2 = part of T.
T. = AM if transformer;
C.. = 200 pF. ceramic disc.
Thompson - Ramo - Wool50 V
dridge No. 12414 or equiv.
C..
20 ,p.F; electrolytic.
T.
AM if transformer;
25 V
Thompson - Ramo - Woole.. =: 1500 pF = 10%.
dridge No. 12415 or equiv.
ceramic disc
T.
radio-detector trans,,_
F
.
former; Thompson-Ramo..... = 0.02 IL • ceramIC disc.
Wooldridge No. 12007R1
50 V
or Automatic Mfg. Co.
e.. part of T,
No. E2741166AB or equiv.
10 p.F. electrolytic.
T, = AM if transformer;
,,_.
Thompson - Ramo - Woolvro
2.2 ILF. ceramic disc.
dridge No. 12416 or equiv.
200 ILF. electrolytic.
T.
driver transformer;
,,35__V 100
primary 8000 ohms at 3
"""
p.F, electrolytic.
rnA dc; secondary 60
25 V
R, = 68 ohms. 0.5 watt
ohms; Columbus Process
C..
500 p.F. electrolytic.
Rs
220 ohms. 0.5 watt
Co. No. X5357 or equiv.
25 V
Rs = 680 ohms. 0.5 watt
T.
output transformer;
C••, C•• = spark plate
RIO = 4300 ohms. 0.5 watt
primary 20 ohms at 700
LI
6.2 p.H. radio-freR13
1 megohm. 0.5 watt
rnA dc; secondary 4
quency choke
Rl< R15 = 10000 ohms.
ohms; Columbus Process
La = antenna coil for FM
0.5 watt
Co. No. 5383 or eQ,uiv.
NOTE: See general considerations for construction of high-frequency and broadband Circuits
on page 391.
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408 .
RCA Transistor Manual
LINE-OPERATED (AC/DC) AM/FM RADIO RECEIVER
12-7
IF AMPLIFIER (FM)
OR CONVERTER (AM)
FM
INPUT
RI7
TYPE
40265
R40
Circuit Description
This seven-transistor AM/FM
radio receiver operates directly from
either an ac power line or a dc supply of 117 volts. AC power inputs
are converted to dc power by the
40265 rectifier. A series dropping
resistor R.. reduces the rectifier output to the value of 9 volts required
for the rf, if, and audio driver stages.
Operation of this ac/ dc AM/FM
receiver is essentially the same as
that of the AM/FM automobile receiver shown in circuit· 12-6, except
that po rf-amplifier stage is required for AM operation. Demodulation of FM signals is accomplished
by a conventional ratio detector
which uses two IN541 diodes. AM
Circuits
409
LlNE.OPERATED (AC/DC) AM/FM
RADIO' RECEIVER (cont'd)
12-7
Circuit Description (cont'd)
demodulation is provided by a 1N295
diode detector circuit. The audio
amplifier uses a 40263 transistor in
an emitter-follower driver stage and
a 40264 high-voltage silicon transistor in a single-ended, commonemitter audio-output stage. The
audio-output stage can deliver one
watt of audio output to the speaker
with less than 10 per cent distortion.
A voltage-dependent resistor Ra.
provides transient-voltage protection for the output circuit.
Parts List
C,. C2 = 470 pF. mica
wire. spaced to %6 inch.
form to take 10/32 slug
C•• C20 = 2.2 pF. ceramic
wound on a 0.220-inch(Arnold 1RN8 or equiv.);
disc
diameter coil form that
secondary 4-~!. turns No.
C•• C.. = 4 /LF. electrolytic.
takes a No. 10/32 slug
16 wire spaced to ~23 V
(Arnold No. LRN8 or
inch; primary 3 turns.
C•• C ... Co2. Cn = 0.05 /LF.
equiv.)
center-tapped. w 0 u n d
ceramic disc
Lo = rf coil. 1 /LH
over ground end of
Co. C,.. C..
ganged tuning
L. = FM oscillator coil; 3
secondary.
capacitors. 7 to 20 pF
turns of No. 16 wire
T2 = 10.7-Mc/s if transC•• C•• = 5 pF. ceramic disc
spaced to 0.4-inch. wound
former. Thompson-RamoC•• C12. ClO = feedthrough
on
0.220-inch-diameter
Wooldridge No. 17214-Rl
capacitors. 0.002/LF
coil form that takes a No.
or equiv.
C•• Cao. C32. C ... C... C... Co..
10/32 slug (Arnold No.
Ta-AM antenna coil; priC.. = 0.01 /LF. ceramic
LRN8 or eqwv.)
mary No. 2/38 Litz wire'
C,O. C,•• C'" = trimmer caRl = 5600 ohms. 0.5 watt
wound across length of
pacitors. 2 to 12 pF
R. = 390 ohms. 0.5 watt
General Ceramic. ceramic
Cu = 4.7 pF. ceramic disc
R •• Rn = 2200 ohms. 0.5
Q rod (0.33-inch dia. 6
C,•• C.. = 1500 pF. ceramic
watt
inches long) to tune
disc
R •• Rl•• R,. = 100 ohms. 0.5
broadcast band with tunC... COl = 4 pF. ceramic
. watt
ing capacitors as shown;
C,.
3.3 pF. ceramic disc
Ro. R.
47000 ohms. 0.5
secondary 10 turns No.
C••
270 pF. ceramic disc
watt
2/38 Litz wire bifilar
C... Ca. = 51 pF. mica
Re. R.. = 680 ohms. 0.5 watt
wound at ground end of
C.. = 15 pF, ceramic disc
R. = 2700 ohms. 0.5 watt
primary
C.. = 1200 pF. ceramic disc
Re = 15000 ohms. 0.5 watt
Tt-10.7-Mc/s
if
transC... Cn = tuning and trimRlO. R30. Rn = 0.47 megohm,
former. Thompson~Ramo"
mer capacitors for AM
0.5 watt
Wooldridge No. 17215-R.
Ru = 18000 ohms. 0.5 watt
or equiv.
antenna coil. combined
R12 = 4700 ohms. 0.5 watt
T.:=: AM oscillator coil;
value 12 to 310 pF
R1.. R2. = 1000 ohms. 0.5
secondary 20 turns No.
watt
2/38 Litz wire wound on
C... C.. = 3.9 pF. ceramic
C... C.. = 0.005 p.F. ceramic
R1. = 330 ohms. 0.5 watt
%.-inch-dia. coil form;
disc
R1. = 820 ohms. 0.5 watt
primary 95 turns wound
Coo
470 pF. mica
R1.
68000 ohms. 0.5 watt
over secondary tapped at
C.. = 0.003 pF. ceramic
R20 = 10000 ohms, 0.5 watt
5 turns; slug. General
C... C.O
tuning and trimR ... = 12000 ohms. 0.5 watt
Ceramic. ceramic Q rod
mer capacitors for AM
R2. = 470 ohms. 0.5 watt
%-inch long
oscillator coil. combined
Rat = 68 ohms. 0.5 watt
T. = 455-kc/s if transvalue 12 to 128 pF
R"". R2•• R.. :=: 6800 ohms.
former. Thompson-RamoC... C ••• Cso. C •• = 56 pF
0.5 watt
Wooldridge No. 17217-&
Cn = 220 pF. ceramic disc
R87 :=: 1500 ohms. 0.5 watt
or equiv.
C.., CS1 = 0.01 /LF. ceramic
R .. = volume control. poT7 = 10.7-Mc/s if transdisc
tentiometer. 40000 ohms
former. Thompson-RamoC..
10 /LF electrolytic. 3 V
Ro. :=: 39000 ohms. 0.5 watt
Wooldridge No. 17216-R.
C•• :=: 2400 pF, mica
R3.I = 82000 ohms. 0.5 watt
or equiv.
C..
3600 pF. ceramic
R35 :=: 560 ohms. 0.5 watt
T.:=: 455-kc/s if transC.. :=: 47 pF. ceramic disc
R .. = 3900 ohms. 0.5 watt
former. Thompson-Ramoe... Coo. Col = 330 pF, R.. = 82 ohms. 0.5 watt
Wooldridge No. 17218 or
ceramic disc
R .. = 3000 ohms, 5 watt
equiv.
C••• Coo = 0.47 /LF. ceramic
R .. = voltage-dependent reT. = ratio-detector transdisc
sistor. Ferroxcube No.
former. Thompson-RamoC•• :=: 150 /LF. electrolytic,
E299DD-340 or equiv.
Wooldridge No. 16786-R2
R", = 200 ohms, 5 watt
or equiv.
6 V
C..
150 /LF. electrolytic.
Sl = selector switch, five.
TlO
455-kc/s if trans15 V
pole. three-position
former. Thompson-RamoC..
0.02 /LF. ceramic disc
S2 = ON-OFF switch (part
Wooldridge No. 17219-Rl
C.O = 80 /LF, electrolytic,
of R .. )
or equiv.
150 V
T1
input matching transTl1
audio output transLl
rf choke. 10 p.H
former; 0.220-inch outerfo~er. Triad S-12X or
L. = 4-% turns of No. 16
diameter threaded coil
eqwv.
NOTE: See general considerations for construction of high-frequency and broadband circuits
on page 391.
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410
RCA Transistor Manual
THREE-BAND AM RADIO RECEIVER
12-8
RF
AMPLIFIER
IF
AMPLIFIER
-=- 9V
~
Circuits
411
THREE-BAND AM RADIO RECEIVER (con'td)
12-8
Parts List
B = 9 volts
L. = 34 pH at 3100 kc/s,
megohm, audio taper
C1 c.. C..
variable, 26.1 to
short-wave rf coil, Qo
Roo
560 ohms, 0.5 watt
251 pF
81; turns ratio, N1/N., 87:1
R21 = 330 ohms, 0.5 watt
C. C. C. C.. C.. C•• = trimLG = 370 pH at 1000 kc/s,
R .. = 100 ohms, 0.5 watt
mer, 3-35 pF, Arco 403, or
broadcast rf coil, Qo
80;
&'. = 4.7 ohms, 0.5 watt
equivalent
turns ratio, N1/No, 2.5:1;
R •• = 3.9 ohms, 0.5 watt
C.
0.25 pF, ceramic disc
N./N3, 25:1
R .. 3.9 ohms, 0.5 watt
C7, CtO, Ct., C.s
0.05 pF,
L7 = 4200 JLH at 270 kc/s,
St.-Sab
three-section
ceramic disc
long-wave rf coil, Qo
wafer switch
C8 Cll Cta
trimmer, 1.5-20
10; turns ratio Nt/Na,
5.
speaker, 3.2 ohms
pF, Arco 402, or equiv.
91:1
(measured
with
Tl first if transformer (455
Cu, C..
0.01 JLF, ceramic
100000-ohm shunt)
kc/s): double-tuned cridisc
Ls = 29 JLH at 3550 kc/s,
tical coupling, Automatic
C,. = 0.0005 pF, ceramic
short-wave oscillator coil,
Mfg. Co. No. E-2,749,067disc
Qo
20; turns ratio
EX, or equivalent
Cu, C18, C3l
0.02 JLF,
Nt/N., 25:1. Nt/N•• 4:1
To = second if transformer
ceramic disc
Lo
200 pH at 1455 kc/s.
(455 kc/s): single-tuned.
C,•• C•• = 350 pF. part of T,
broadcast oscillator coil,
Automatic Mfg. Co. No.
Coo = 900 pF, silver mica
Qo = 39; turns ratio Nt/N.,
E-2,749,067CX, or equiv.
Cn
300 pF, silver mica
29:1, N,/N., 13:1
Ta
driver transformer:
Co2
91 pF, silver mica
Lto = 1100 JLH at 725 kc/s,
primary 10000 ohms, secC.. = 10 pF, ceramic disc
long-wave oscillator coil,
ondary, 2000 ohms, center
C••
10 pF. 3 volts. elecQo = 17; turns ratio
tapped; Mid-West Coil
trolytic
N,/N., 21:1, N,/N., 12:1
and Transformer Co. No.
Coo
220 pF, ceramic disc,
(measured with 20000020AT88, or equivalent
supplied with T.
ohm shunt)
T.
output transformer:
CO2 = 2 pF, 3 volts. elecR, = 270 ohms, 0.5 watt
pl:imary, 250 ohms center
trolytic
&,
150000 ohms, 0.5 watt
tapped; secondary, 3.2
Cas
10 pF, 3 volts, elecR. = 22000 ohms, 0.5 watt
ohms; Mid-West Coil and
trolytic
R
0 h
05
tt
Transformer Co. No. 20CM
100 /LF. 3 volts, elec• 10000 0 ms, . wa
AT86, or equivalent
trolytic
R. = 560 ohms, 0.5 watt
NOTE 1: Components Co,
C..
0.04 /LF, ceramic disc
Ro 1800 ohms, 0.5 watt
L., and R. make up an
C C
100 F 10 volts
R7 = 18000 ohms, 0.5 watt
if trap in the long-wave
-:;lecb-o~tic /L ,
' R . 1200 ohms, 0.5 watt
band and are used to imLI
42 JLH at 3100 kc,
R. = 3300 ohms, 0.5 watt
prove if rejection and
short-wave antenna coil,
Rto = 200000 ohms, 0.5 watt
signal-to-noise ratio.
Qo
75; turns ratio
Rll = 47000 ohms, 0.5 watt
NOTE 2: For the antenna
Nt/N., 1.67:1; N./N., 18:1
RlO = 270 ohms, 0.5 watt
and rf coils, NI refers to
L.
380 /LII at 1000 kc/s,
RIa 10000 ohms, 0.5 watt
the turns of the primary
broadcast, antenna coil,
R.. 1000 ohms, 0.5 watt
winding, N. to the tapped
Qo
184; turns ratio
R15 = volume control, 1
portion of the primary,
NI/N., 78:1
megohm, reverse log.
and Na to the secondary.
La
4600 /LH at 270 kc/s,
taper
For the oscillator coils, N,
long-wave antenna coil,
RIO = 4000 ohms, 0.5 watt
refers to the tank windQo = 69; turns ratio
RI7 27000 ohms, 0.5 watt
ing, N. to the emitter
NI/Na, 91:1
R18 == 4700 ohms, 0.5 watt
winding, and N. to the
L.
5 pH. part of if trap
Rto = tone control, 1
collector winding.
NOTE: See general considerations fo'r construction of high-frequency and broadband circuits
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on page 391.
Circuit Description
In this three-band superheterodyne AM receiver, three mechanically ganged, three-position, multiple-section wafer switches S" S2,
and S. select the proper combination
of antenna, rf-amplifier, and converter tuned circuits for long-wave,
broadcast-band, or shortwave operation. Each band uses a 455-kc/ s
intermediate frequency so that the
same if amplifier can be used. The
whip antenna is optimized for the
shortwave band because the gain
of the receiver is lower at these
higher frequencies.
The signal received by the antenna is coupled by a single-tuned
antenna transformer (L. for shortwave signals, L. for broadcast-band
signals, or La for long-wave signals,
depending on the setting of the selector switch S,) to the emitter of
the 2N1632 rf-amplifier stage.
Single-tuned coupling is used to
transfer the received signal from
the collector of the 2N1632 to the
emitter of the 2N1526 converter
stage. Switch S2 selects Ls and its
associated tuning capacitors for
shortwave operation, L. and its associated tuning capacitors for broadcast-band operation, or L7 and its
associated tuning capacitors for
long-wave operation.
412
12-8
RCA Transistor Manual
THREE-BAND AM RADIO RECEIVER (con'td)
Circuit Description (cont'd)
The oscillator signal is supplied
to the converter transistor from the
.oscillator resonant circuit (Ls and
associated components for shortwave, L. and associated components
for broadcast band, or L.o and associated components for long-wave, as
determined by the setting of switch
Sa). Tuning capacitors C1, C., and Cu,
which are common to the three
bands, are ganged to assure that the
oscillator frequency is. always 455
kcfs above the frequency of the received signal. Trimmer capacitors
are provided in each tuned-circuit
network (in each band) to assure
that proper tracking is maintained
throughout the band.
The 455-kcf s intermediate-frequency signal is coupled from the
12-9
collector of the 2N1526 converter
to the base of the 2N1524 if amplifier by the dOUble-tuned if transformer T,.. The single-tuned if
transformer T. couples the amplified
if signal to the anode of the detector diode. The diode circuit separates the audio signal from the
modulated if signal and develops an
audio voltage across the volumecontrol potentiometer R... The portion of this audio signal coupled
from the wiper arm of· R.. to the
2N408 transistor is used to develop
the driving power for the 2N270
transistors used in the push-pull
audio-output stage. This push-pull
stage develops the power to drive
the speaker voice coil.
HIGH-QUALITY PREAMPLIFIER
FOR PHONO, FM, OR TAPE PICKUP
Circuit Description
This preamplifier has equalized
input circuits for FM stereo (flat),
ceramic and magnetic phonograph
pickups, and tape-recorder heads.
Level controls are provided for FM
and ceramic and magnetic phonograph inputs. High input impedance
and input equalization are provided
in each operating mode by a directly
coupled two-stage input section that
uses frequency-sensitive negative
feedback to provide the desired input characteristics. The 2N2613
transistor used in the first stage has
low noise, low saturation current,
wide frequency response, and high
gain. The 2N591 transistor used in
the second stage has excellent linearity and better-than-average noise
characteristics. The operating points
selected for these stages provide
both low noise performance and an
adequate dynamic range.
Both tone controls in the preamplifier provide full-range boost
and cut functions; interaction is negligible. Distortion is low for any
tone-control setting. The collectorto-base feedback in the third and
fourth stages works with the tone
controls to provide the over-all
tonal response of the preamplifier.
The 2N 408 stages amplify the signal to the input level required by
most transistor audio power amplifiers. The sensitivity of the preamplifier at full volume is such that
a I-millivolt input (2-millivolt tape
input) results in a 42-millivolt output. For a given input level, the
output response (with controls flat)
is constant within ± 1 dB from 10
to 20,.000 cf s.
The dc power for the preamplifier
may be obtained from the power
supply for the audio amplifier. If
necessary, a voltage-dropping resistor should be used to reduce the
supply voltage to the -18 to -22
volts required for the preamplifier
stages. This preamplifier is especially suited for use with the 15watt and 35-watt high-quality audio
amplifiers, circuits 12-12 and 12-14.
413
Circuits
HIGH-QUALITY PREAMPLIFIER
FOR PHONO, FM, OR TAPE PICKUP (cont'd)
72-9
TAPE
r-----~--------------_.------------~~-22V·
LEVEL
t-.I\R
I \9.A __ C5
RII
·POWER SUPPLY IS COMMON TO BOTH
CHANNELS OF STEREO AMPLIFIER.
Parts List
C1 =-25 p.F, electrolytic, 3 V
C. = 0.06 JtF ± 5%, ceramic,
50 V
C.
0.2 JtF ± 5%, ceramic,
25 V
C.
50 p.F, electrolrtic, 3 V
C. = 270 pF~ ceramlC, 600 V
Ce, C1.
u.05 p.F ± 5%,
ceramic, 50 V
C. = 0.25 p.F, ceramic, 50 V
C. = 25 JtF, electrolytic, 15 V
C. = 2 p.F, electrolytic, 3 V
C'G, C ..
2 p.F, electrolytic,
10 V
Cn = 0.15 JtF ± 5%,
ceramic, 50 V
C12
0.12 p.F ± 5%,
ceramic, 50 V
C'io 10 p,F, electrolytic,
=
=
=
=
=
V
=
C15
0.003 I'F
ceramic, 500 V
±
5%,
Rl = level control, potentiometer, 50000 ohms, 0.5
watt
& = 51000 ohms, 0.5 watt
R. = level control, potentiometer, 1000 ohms, 0.5
watt
14 = level control, potentiometer, 5000 ohms, 0.5
watt
R5 = 1 megohm, 0.5 watt
Rs = 15000 ohms, 0.5 watt
R. = 47000 ohms, 0.5 watt
R. = 100 ohms. 0.5 watt
Rs = 0.1 megohm ± 5%, 0.5
watt
RlO = 0.18 megohm, 0.5 watt
Rl1 = 820 ohms ± 5%, 0.5
watt
R12
27000 ohms ± 5%, 0.5
watt
R13 = 1500 ohms ± 5%, 0.5
watt
=
= 1000 ohms, 0.5 watt
= 330 ohms, 0.5 watt
R17 = volume control, poRu
R15
= 1800 ohms, 0.5 watt
RIO
tentiometer, 10000 ohms,
0.5 watt
R1.
56000 ohms, 0.5 watt
R19 = 6800 ohms, 0.5 watt
Roo, &.
2700 ohms, 0.5
watt
R21
180 ohms, 0.5 watt
R.. = bass control, potentiometer, 50000 ohms, 0.5
watt
R .. = 0.1 megohm, 0.5 watt
R.. = 3300 ohms, 0.5 watt
fuo = treble control, potentiometer, 0.1 megohm. 0.5
watt
a...
27000 ohms, 0.5 watt
81 = selector switch; rotary
type; 2-pole, 3-position
=
=
=
=
414
RCA Transistor Manual
LINE-OPERATED TWO-STAGE
PHONOGRAPH AMPLIFIER
12-10
Output 1 W
TYPE
RI4 40265
RII
R4
LOUDNESS
CONT.
BASS
CONT.
117 V
AC/DC
Parts List
= 1200 pF, ceramic
=c. 0.005
JLF, ceramic
C. = 0.1 p.F, ceramic
C. = 0.01 p.F, ceramic
C"
C.
C. = 100 p.F, electrolytic,
25 V
C. = 250 p.F, electrolytic,
12 V
C.
50 p.F, electrolytic,
150 V
Rl
56000 ohms, 0.5 watt
a.
bass control, potentiometer,
3 megohms,
audio taper
=
==
R., R.
=
68000 ohms, 0.5
watt
R< == 0.33 megohm, 0.5 watt
R. = treble control, potentiometer,
1
megohm,
audio taper
RB, RlO = 10000 ohms, 0.5
watt
R7
loudness control, potentiometer, 2 megohms,
linear taper; tapped at
1 megohm
Rs == 0.18 megohm, 0.5 watt
=
= 33000 ohms, 0.5 watt
voltage-dependent resistor, Ferroxcube No.
E299DD-P340 or equiv.
= 220 ohms, 0.5 wJtt
R,. = 250 ohms, 3 watts
5. = ON -OFF switch, single-pole, single-throw
Tl = output transformer;
primary 2500 ohms, secondary 3.2 ohms, efficiency 80 per cent; Triad
5-12X or equiv.
Ru
R,. =
R,.
Circuits
12-10
415
LINE-OPERATED TWO-STAGE
PHONOGRAPH AMPLIFIER (cont'd)
Circuit Description
This two-transistor phonograph
amplifier provides full output power
of one watt at average record levels
with a ceramic phonograph cartridge such as the Astatic model
314 or equivalent. It operates directly from either an ac power line
or a dc supply of 117 volts. A 40265
diode is used in a half-wave rectifier circuit to convert ac inputs to
the dc power required for the two
transistor stages. Capacitor C. filters the rectifier output.
The 40264 n-p-n output transistor
is driven by a 40263 p-n-p transistor operated in an emitter-follower
stage. Because of the. large, bypassed emitter resistor R13, the amplifier can maintain a constant
output-stage current for wide variations in current transfer ratio of
the transistors without loss of ac
gain. Moreover, the phase reversal
between the collector currents of the
two transistors tends to compensate
for temperate effects. Any tendency
for current in the 40264 transistor
to increase with temperature is offset by an increase in emitter current of the 40263 transistor.
Output transformer T, is used to
match the amplifier to the speaker
to obtain an output of one watt.
The electrolytic capacitors C" CT,
and C. can be sections of a multiplesection common-negative capacitor.
The power gain of the basic amplifier circuit is 68 dB. An input of
3 microamperes is required to a
load of 15,000 ohms to obtain a
power output of one watt. The stability of the circuit is excellent; the
sensitivity remains relatively constant over the range of ambient
temperatures from 25 to 70·C. Distortion is less than 1 per cent for
outputs below 50 milliwatts, and approaches 10 per cent as the output
rises to one watt, the point at which
clipping begins. At a line voltage of
117 volts, the 40264 transistor idles
at a dissipation of approximately
2.5 watts. The 40264 should be connected to a suitable heat sink so
that the junction temperature will
not exceed 150·C under worst-case
conditions. The voltage-dependent
resistor R12 provides transientvoltage protection for the output
transistor.
416
12-11
RCA Transistor' Manual
HIGH-QUALITY lO-WATT AUDIO POWER AMPLIFIER
C3
+
AF
INPUT
R3
R2
R4
Parts List
V
=
C'6
50 p.F. electrolytic.
C.
250 pF. ceramic
CS25=V 50 p.F. electrolytic.
C.
100 pF. ceramic
C'6
100 p.F. electrolytic.
=V
C050.J000 p.F. electrolytic.
2slooO p.F. electrolytic.
Ct
F. = fuse. l-ampere
R.
volume control. potentiometer. 5000 ohms.
0.5 watt (part of assembly with ON-OFF switch
=
51)
==
==
=
R2. He
1000 ohms. 0.5 watt
He
36000 ohms. 0.5 watt
R •• R, 4700 ohms. 0.5 watt
He
180 ohms. 0.5 watt
R7 = 470 ohms. 0.5 watt
R.
68000 ohms. 0.5 watt
=
R10. R11 220 ohms. 0.5 watt
R12. R1. == 1 ohm. 1 watt
ON-OFF switch (part
of assembly with volumecontrol potentiometer R1)
T1
power transformer;
primary. 117 volts rms;
secondary. center-tapped.
27 volts rms. from center
tap to each end at 500
mA dc
81
=
=
417
Circuits
12-11
'HIGH-QUALITY IO-WATT AUDIO
POWER AMPLIFIER (cont'd)
Circuit Description
This high-quality audio amplifier
can supply 10 watts (rms) of power
to an 8-ohm speaker for an input
of 1 volt rms. The output impedance
of the amplifier is designed to match
an 8-ohm speaker without the use
of an output transformer. Seriesconnected 40310 n-p-n transistors
are used in the output stage. The
driver stage uses a 40319 p-n-p
transistor and a 40314 n-p-n transistor connected in complementary symmetry to develop push-pull
drive for the output stage so that
no driver transformer is required.
(The use of driver and output transformers would tend to limit the
over-all frequency response of the
amplifier.) The over-all negative
feedback of 6 dB and other factors
result in an amplifier frequency response that is flat within 1 dB from
15 to 25,000 c/ s. ,The use of direct
coupling between stages and local
dc feedback for each stage results
in stable quiescent operation of the
amplifier at ambient temperatures
up to 71°C.
The input stage of the amplifier
employs a 40317 n-p-n transistor
connected in a class A commonemitter circuit configuration. Negative feedback from collector to base
of the transistor stabilizes operation of the input stage.
The amplified signal developed at
, the collector of the 40317 is directly
coupled to the base of the 40319
driver transistor, and the signal at
the junction of the collector load resistors R. and It. is directly coupled
to ,the base of the 40314. Because
these driver transistors are connected in complementary symmetry,
the outputs developed across resistor RlO and R" are 180 degrees
out of phase. The IN3754 diodes
connected between the bases of the
driver transistors are used to compensate for the effect of temperature variations on the performance
of the output transistors.
The 40310 series-connected output transistors are operated in class
AB rather than class B to prevent
cross-over distortion. The drive input from the 40314 driver transistor is applied between the emitter
and base terminals of its output
transistor so that this output transistor is effectively operated in a
common-emitter configuration. As a
result, both output transistors provide equal voltage gain. The small
amount of degenerative feedback developed across emitter resistors R,.
and R'3 helps to stabilize the output
stage. The limiting action of the
IN3193 diodes connected in shunt
with the emitter resistors prevents
exeessive power losses across these
resistors when the amplifier is
operated to provide the full rated
output of 10 watts.
This audio power amplifier operates from a 117-volt, 60-c/s ac power
input. The input is coupled by
power transformer T, to a conventional full-wave rectifier using two
IN3193 diodes. The rectifier provides a 36-volt dc output for use as
the collector supply voltage for the
amplifier.
418
RCA Transistor Manual
12-12 HIGH-QUALITY 15-WATT AUDIO POWER AMPLIFIER
IHFM Music Power Rating 36 W
-38. V
FROM FRONT-
END POWER
SUPPLY
TO
HIGHQUALITY
PREAMP.
OUTPUT
(SOHMSI
-22V
Cg
+22V
F3
Parts List
c.; V 200 JiF, electrolytic,
=
C'G V 200
C.
82 J,F, ceramic
C'!5=V1
p.F, electrolytic,
JiF, electrolytic,
Co15= V 250 p.F, electrolytic,
C. = 0.015 JiF, ceramic
C., C. = 100 p.F, electrolytic,
25 V
C•. ·C.o
2500 p.F, electrolytic, 25 V
F. = fuse, small enough to
protect speaker
F., F.
fuse, 3-ampere
=
=
F, = fuse; I-ampere, sloblo
R.
18000 ohms, 0.5 watt
& = 3300 ohms, 0.5 watt .
R. = 10000 ohms, 0.5 watt
R, = ·27000 ohms, 0.5 watt
Ro = 33000 ohms, 0.5 watt
R. = 1500 ohms, 1 watt
R. = 1200 ohms, 0.5 watt
R. = 330 ohms, 0.5 watt
R.
2700 ohms, 0.5. watt
R.o
180 ohms, 0.5 watt
Ru = 4.7 ohms, 0.5 watt
R .. = 560 ohms, 2 watts
R.. = 150 ohms, carbon, 5
watts
R .., R •• = 180 ohms, 2 watts
=
==
=
R.o, R17
120 ohms, 1 watt
R.s. R •• = 0.27 ohms, 1 watt
T. = driver transformer,
Better Coil and Transformer
Company
No.
99A7 or equiv.
T. = power transformer,
Better Coil and Transformer
Company
No.
99P5 or equiv.
• Capacitor C. should not be
used when the amplifier
is driven by preamplifier
circuit 12-9 or an~ other
preamplifier circuIt that
has a capacitively coupled
output.
Circuits
12-12
419
HIGH-QUALITY 15·WATT AUDIO
POWER AMPLIFIER (cont'd)
Circuit Description
This audio power amplifier can
deliver 15 watts of sine-wave power
to an 8-ohm speaker; its IHFM
music power rating is 36 watts. Two
of these amplifiers can be used in
a stereo system to provide a total
sine-wave power of 30 watts, or
total IHFM music power of 72 watts.
In this four-stage unit, two directly
coupled input stages are used as a
predriver for the driver-output
combination. An emitter-follower
circuit is used in the second stage
of the predriver section to provide
the low source impedance required
for the voltage feedback to the
driver stage.
The 2N2614 transistor used in the
first predriver stage has high gain,
low saturation current, and wide frequency response. The 2N 408 used in
the second stage improves linearity.
Negative feedback coupled from the
output (emitter) of the 2N408
emitter-follower stage to the input
(base) of the 2N2614 stage provides
dc stabilization for the predriver
section.
The driver-output section of the
amplifier consists of a class B output stage driven by a transformercoupled driver stage. Both stages
use drift-field power transistors that
feature excellent linearity (as a
function of current and voltage
swing) , high gain, low saturation
and leakage current, and a high
common-emitter cutoff frequency.
Because the negative feedback
coupled from the output (speaker)
terminal back to the emitter of the
driver stage is applied in series with
the input voltage, a low source impedance is required at the 2N2148
driver stage. The emitter-follower
2N408 second stage provides this
low impedance.
Two IN2326 compensating diodes
are used in the output stage to prevent changes in the 2N2147 idling
current with variations in tempera-
ture. A decoupling network is used
between the collector of each 2N2147
output transistor and its compensating diode to prevent the diode from
becoming back-biased during the
signal swing and causing premature
clipping.
The power for the output stage is
obtained from a center-tapped bridge
rectifier that provides both positive
and negative 22-volt outputs with
respect to the grounded center
tap. The direct signal-return path
through the supply reduces lowfrequency phase shift. Two IN2859
100-volt flanged axial-lead silicon
rectifiers mounted on heat sinks are
used in the power supply. If two
amplifiers are combined in a stereo
system, this power supply is common to both channels. A separate
power supply that provides a wellfiltered dc voltage of -38 volts
should be used for the predriver
and driver circuits.
This audio power amplifier should
be used with a high-quality preamplifier such as that shown in circuit 12-9. Typical performance data
for the 15-watt amplifier (with an
8-ohm load impedance) are as
follows:
Distortion at 25 watts output:
0.350/0 at 25 cIs
0.350/0 at 1000 cIs
0.750/0 at 15,000 cis
0.800/0 at 20,000 cIs at 1 dB
below 15 watts
IHFM music power: 36 watts
Sensitivity: 42 millivolts into
3300-ohm input for 15-watt
output
Hum and noise: 70 dB below
15 watts
Frequency response (3-dB-down
points): 6 to 30,000 cis
Intermodulaton distortion (with
60- and 4000-c/s signals
mixed 4:1; output equivalent to 15 watts): 1.0%
420
RCA Transistor Manual
12-13
LlNE·OPERATED (AC/DC) 25-WATT
AUDIO POWER AMPLIFIER
r-~~------1-~~~--------------~~---
Ra
Vee
S,
O------------~Oll~~~~----~~
I
"7V
I
AC OR DC
O~------O " O - - - - - - - - - - > I r
Circuit Description
This amplifier is intended primarily for use in public-address
systems and other audio applications
in which flexibility with respect to
load impedance is important. The
amplifier provides more than 60
dB of power gain and has a fiat frequency response from 35 to 15,000
Circuits
12-13
421
LINE-OPERATED (AC/DC) 2S-WATT
AUDIO POWER AMPLIFIER (conYd)
Circuit Description (cont'd)
cIs. Total harmonic distortion at the
output is less than 1 per cent, and
the hum and noise level is 63 dB below the output for operation at the
rated power level. The high breakdown voltage of the silicon transistors used in the output and driver
stages permits the amplifier to be
operated directly from either an ac
power line or a dc supply of 117
volts. AC inputs are converted to
a smooth dc supply voltage by four
1N3194 diodes in a full-wave bridge
rectifier, together with a simple RC
filter network R1. and C•.
The input stage of the amplifier
uses a 40231 transistor in a class A
common-emitter configuration. This
configuration, together with negative feedback of approximately 10
dB from the output (speaker terminal) to the emitter of the 40231,
results in an amplifier input impedance of 2500 ohms. The amplified
signal at the collector of the input
transistor is directly coupled to the
base of a 40320 transistor used in
a simple phase-splitter circuit to
develop the out-of-phase signals required to drive the push-pull output
stage. Because the collector and
emitter load resistors in the phase-
splitter stage are of equal value,
the signals developed at the emitter
and collector of the 40320 are equal
in amplitude but 180 degrees out of
phase. These signals are capacitively
coupled to the bases 'of the 40321
driver transistors.
The driver transistors are connected to the 40322 high-voltage
output transistors in a Darlington
configuration which provides the
high power gain required to develop
the desired power output from the
signals supplied from the phasesplitter. Resistors Ro, R10, Ru, and
R12 and the 1N3754 diode bias the
driver and output stages for class
AB operation. These stages are
operated in class AB rather than
class B to minimize cross-over distortion. The 1N3754 diode also provides the temperature compensation
required to maintain a relatively
constant quiescent current with
small changes in temperature or line
voltage. At the rated output, the
dissipation in each output transistor is less than 15 watts at room
temperature; therefore, the amplifier can be operated at temperatures
up to 70°C without transistor
derating.
Parts List
C1
C.
=
!iF, electrolytic, 3 V
= 10.02
!iF, ceramic disc
250 p.F, electrolytic,
c. =
25 V
C.
0.002 p.F, ceramic disc
C5, C.
2 p.F, electrolytic,
25V
C. = 250 !iF, electrolytic,
150 V
C.
0.1 !iF, ceramic disc
Fl
fuse, 1.5-ampere
= =
=
=
R1 = 15000 ohms, 0.5 watt
R.
3000 ohms, 0.5 watt
Ra = 2200 ohms, 0.5 watt
R.
51 ohms, 0.5 watt
R.
5100 ohms, 0.5 watt
Ro, R.
300 ohms, 0.5 watt
Ro
4000 ohms, 5 watts
R., R10
0.18 megohm, 0.5
watt
Rll, R,., R12, Ru = 510 ohms,
0.5 watt
=
=
=
==
=
=
R15, Rl0
5 ohms, 5 watts
R17 = 10 ohms, 20 watts
R18
0.22 megohm, 0.5 watt
51
ON-OFF switch,
double-pole, single-throw
Tl
audio output transformer;
primary,
600
ohms,
center
tapped;
secondary, 8 ohms; Columbus Process Co. No.
DD176525 or equiv.
==
=
422
RCA Transistor Manual
J2- J4 HIGH-QUALITY 35-WAn AUDIO POWER AMPLIFIER
IHFM Music Power Rating 72 W
-21 V
-35 V
TO
HIGHQUALITY
PREAMP
+35 V
-35
V_-------,
+35 V
Circuit Description
This audio power amplifier can
deliver 35 watts of sine-wave power
to an 8-ohm speaker; its IHFM
music power ratings is 72 watts.
Two of these amplifiers can be used
in a stereo system to provide a
Circuits
12-14
423
HIGH-QUALITY 3S-WATT AUDIO
POWER AMPLIFIER (con,t'd)
Circuit Description (cont'd)
total sine-wave power of 70 watts,
A center-tapped, full-wave bridge
or total IHFM music power of 144 rectifier using four 1N2860 diodes
watts. The predriV'er and driver provides the symmetrical positive
stages are essentially identical to and negative voltage for the powerthose used in the 15-watt amplifier output stage. If two amplifiers are
of circuit 12-12; however, the out- combined in a stereo system, this
put stages of the two amplifiers power supply is common to both amare significantly different.
plifiers. The voltage of -27 volts
The output stage of the 35-watt required for the predriver and driver
amplifier employs four 2N2147 tran- should be obtained from a separate,
sistors in a single-ended, series- well-filtered supply.
arranged, push-pull configuration.
This audio power amplifier should
Two of the transistors are base- be used with a high-quality predriven by the driver stage through amplifier such as that shown in cirthe driver transformer T , . Each of cuit 12-9. Typical performance data
these transistors, in turn, drives the , for the 35-watt amplifier (with an
emitter of another 2N2147. The two 8-ohm load impedance) are as
transistors in each half of the push- follows:
pull amplifier are series arranged
Distortion at 35 watts output:
and biased to permit large-signal
0.3 % at 25 cl s
operation. Two 1N2326 germanium
0.30/0 at 1000 cis
diodes are used to compensate for
1.0% at 15,000 cl s
changes in transistor idling current
IHFM music power: 72 watts
with temperature. These diodes also
Sensitivity: 65 millivolts into
improve transient response by pre3300-ohm input for 35-watt
venting shifts in the operating point
output
of the transistors, and reduce crossHum and noise: more than 85
over distortion that may result from
dB below 35 watts
phase shifts across capacitors C.
Frequency response (3-dB-down
and Co.
points): 3 to 40,000 cis
Parts List
C1 := 82 pF, mica
C. := 150 JLF, electrolytic,
15 V
C.
250 JLF, electrolytic,
15 V
C. := 250 JLF, electrolytic,
25 V
CG, Co := 50 JLF, electrolytic,
20 V
C7 := 0.005 JLF, ceramic disc
C., CD
2500 JLF, electrolytic, 50 V
Fi := fuse, small enough to
protect speaker
F.
fuse, 2-ampere, sloblo
R" Ro := 3300 ohms, 0.5 watt
=
=
=
Ro, R. = 10000 ohms, 0,5
watt
Ra = 18000 ohms, 0.5 watt
R. := 47000 ohms, 0.5 watt
R. = 330 ohms, 1 watt
R7 := 330 ohms, 0.5 watt
Rs := 220 ohms, 0.5 watt
RlO := ·180 ohms, 0.5 watt
Rll := 4,7 ohms, 0.5 watt
RiO := 0.18 ohms, 0.5 watt
R13, R,., R.o := 270 ohms, 2
watts
R14, R'5 := 150 ohms, 1 watt
R,. := 270 ohms, carbon, 5
watts
R17, RiD := 100 ohms, 1 watt
R21, R22 := 0.51 ohms, 1 watt
R22 := 4 ohms, 25 watts
Sl := ON-OFF switch. sin-
gle-pole, single-throw
T1 := driver transformer,
Better Coil and Transformer
Company
No.
99A5, Columbus Process
Company No. X7601, or
equiv.
To = power transformer,
Better Coil and Transformer
Company
No.
99P6, Columbus Process
Company No. X8300, or
equiv.
424
12-15
RCA Transistor Manual
HIGH-FIDELITY 7o.WAn AUDIO, POWER AMPLIFIER,
With Short-Circuit, Protection
INPUT
+
+
AF
OUTPUT
(SOHMS)
r
-42V
+42 V (NO LOAD)
k---+---..----{) (NOTE 3)
+
IITV
AC
-42 V (NO LOAD)
(NOTE 3)
¥-----....:;f---'----<
Parts List
Cl = 5 p.F, electrolytic, 6 V
C. = 180 p.F, mica, 60 V
C. = 2 p.F, electrolytic, 6 V
C'3
100 p.F, electrolytic,
V
Co = 100 pF, mica, 60 V
C6 =V 100 p.F, electrolytic,
50
C'G
V 250' p.F,
electrolytic,.
=
C., C.
3000 JJ.F, electrolytic, 75 V
Fl .= fuse. 3.ampere '
Rl = 82000 ohms, 0.5 watt
R.
18000 ohms, 0.5 watt
Ra = 0.1 megohm, 0.5 watt
R.
180 ohms, 0.5 watt
R., R6 = 10000 ohms, 0.5
watt
R.
33000 ohms, 0.5. watt
=
=
=
Rs = 4700 ohms, 0.5 watt
R.
270 ohms, 0.5 watt
RlO = 5600 ohms, 0.5 watt '
Rll
bias adjustment, potentiometer, 250 ohms,
linear taper
R13 = 3900 ohms, 0.5 watt
Rla = 100 ohms, 0.5 watt
R,. = zero adjustment, potentiometer, 100 ohms,
=
=
Circuits
12-75
425
HIGH·FIDELITY 70·WATT· AUDIO
POWER AMPLIFIER (cont'.d)
Parts List (cont'd)
linear taper
R,., R,. 0.3 ohm, 10 watts
5, == ON-OFF switch, single-pole, single-throw
5.
thennal cutout switch,
=
=
opens automatically when '
temperature rises above
100'C
T1 == power transformer;
primary, 117 volts nns;
Circuit Description
This amplifier has a frequency response that is flat within 1 dB from
5 to 25,000 cis. 'l'otal harmonic distortion at the full rated output of
70 watts is less than 0.25 per cent
at 1000 cl s. The amplifier requires
no driver or output transformer, and
has built-in short-circuit protection
that prevents damage to the driver
and output stages from high currents and excessive power dissipation.
The driver and output stages of
this amplifier are similar to those
of the 10-watt amplifier in circuit
12-11. The driver stage uses a 40409
n-p-n transistor and a 40410 p-n-p
transistor connected in complementary symmetry to develop push-pull
drive for the output stage. Two
40411 silicon power transistors used
in the output stage are connected in
series with separate positive and
negative supply voltages. The output is directly coupled to' an 8-ohm
speaker from the common point between the two transistors. Negative
feedback of 35 dB is provided by
R. and C•.
The input stage uses a 40406 p-n-p
transistor in a common-emitter circuit. This stage also provides the
dc feedback through C" R., R., and
R14 (the dc zero adjustment) for
maintaining the quiescent voltage of
the ~utput stage at zero plus or
minus 0.1 volt.
The . predriver stage employs a
40407 transistor and a 40408 transistor connected as a Darlington pair.
This circuit has a minimum loading effect on the input stage and
provides the necessary voltage amplification for the entire amplifier.
The subsequent stages do not provide voltage gain.
secondary .. center-tapped,
62 volts from center tap
to each end at 1.5 A dc
(with no external load
on power supply)
Bias-voltage adjustment for the
complementary driver stages is provided by the three 1N3754 diodes
and the 250-ohm potentiometer Rn.
The bias control Rll permits adjustment for' variations in device parameters; it is adjusted so that the
output-stage quiescent current measured at the monitor jack J is 20
milliamperes. The forward voltage
drop across the three diodes" together with the voltage drop across'
the bias control, provides the bias
voltage necessary to maintain the
output stages in class AB operation
to avoid cross-over distortion, The,
1N3754 diodes are connected thermally to the heat sinks of the output
transistors to provide the necessary thermal feedback to stabilize
the quiescent current at its preset
value at all case temperatures up
to 100°C. Because of the hightemperature compensation provided
by this thermal feedback network,
the required stability in the output
stages can be provided by small
emitter resistors, and losses are held
to a minimum.
Short-circuit protection for this
amplifier is provided by a currentlimiting circuit that consists of the
Zener diode and emitter resistors
R,. and R,.. If any condition exists
which causes a current of more than
five amperes to flow. through either
resistor, the voltage potential across
the Zener diode will cause it to conduct in the forward direction during the negative-going output halfcycle and cause it to break down
at the diode reference voltage during
the positive-going output half-cycle.
The driving voltage, therefore, is
clamped at that level and any further
increase in output current is pre-
426
12-15
RCA Transistor Manual
. HIGH-FIDELITY 70-WAn AUDIO
POWER AMPLIFIER (cont'd)
Circuit Description (cont'd)
vented. In this way, both the driver
and the output transistors are protected from high . currents. and excessive power dissipation such as
would be caused by a reduced load
resistance or, in the worst case, a
short circuit.
This amplifier operates from a
full-wave power supply which pro-
12-16
vides symmetrical positive and negative dc outputs of 42 volts. The
thermal cutout S. in the powersupply circuit is attached to the heat
sink of one of the output transistors. In the event of sustained
higher-than-normal dissipations, S.
will turn of!' power to the amplifier
when the temperature rises to 100·C.
THREE-STAGE I-WATT STEREO
PHONOGRAPH AMPLIFIER
IHFM Music Power Rating 2.5 W Per Channel
Circuit Description
This three-stage stereo amplifier
delivers a sine-wave power output
of more than 1 watt per channel to
a 20-ohm speaker; its IHFMmusic
power rating is 2.5 watts per channel, or 5 watts total. The input to
the amplifier is .obtained from a
conventional 0.5-volt, 1000-picofarad
ceramic pickup; full power output
is attained at average record levels
for the maximum volume setting.
The amplifier incorporates bass and
treble tone controls, as well as a
tapped loudness (volume) control
for bass boosting at low volume
settings. It has high gain, operates
at low noise levels, and provides
stable operation at temperatures up
to 55·C.
Each channel employs a 2N2613
low-noise input stage, a 2N2953
transformer-coupled driver stage,
and a conventional transformerless
class B output stage using two
40253 transistors. The output power
is coupled to the speakers through
100-microfarad electrolytic capacitors C18 and Cu. A frequency-sensitive feedback loop in each channel
is connected from the speaker terminal to the base of the driver stage.
Because the 3aO-picofarad series
capacitors C'7 and C18 attenuate the
feedback at low frequencies but allow high-frequency signals to be fed
back relatively unimpeded, they ef-
fectively provide a fixed amount of
bass boost. The 10-picofarad capacitors C,• and C,• provide feedback
stabilization at high frequencies.
The low-noise input and driver
stages are directly coupled. Each
stage uses bypassed emitter resis_
tors, and dc feedback is coupled from
the emitter of the driver to the base
of the input stage. The tone, volume,
and balance controls are grouped together at the input. The 1-megohm
resistors R. and R. and the 0.1megohm resistors R. and Rw provide the .high input .impedance
required for equalization and also
form the divider for the full-range
treble control. Bass cut is obtained
by loading the .pickup at low frequencies. Because of the bass boost
in the loudness function and in the
feedback loop, the bass cut acts in
a manner similar to that of a boostcut control. The loudness function is
provided by 15,000-ohm potentiometers (volume controls) tapped
at 10,000 ohms (R12 and R.. ). The
armature of each potentiometer is
connected to the base of the input
stage so that the source impedance
is low and the noise is reduced at
low volume settings. The balancecontrol potentiometer R15 can be adjusted so that it completely shorts
the input stage of the attenuated
channel to ground or, with less at-
427
Circuits
THJlEE.STAGE I-WATT STEREO
12-16
PHONOGRAPH AMPLIFIER (cont'd)
Circuit Description (cont'd)
tenuation, exactly balances the inputs to the two channels.
The dc power for the amplifier is
provided by a conventional full-
wave center-tapped 22-volt supply
using 40266 rectifier diodes; decoupling networks provide filtered dc
voltages for the front-end stages.
Parts List
C1. C. = 100 pF. ceramic
disc. 25 V
Ca, C.
0.001 p,F. paper,
25 V
Co, Co
0.5 p,F. paper. 25 V
Or, Co = 10 p,F, electrolytic,
3V
C., ClO
100 p,F. electrolytic, 3 V
Cn, Ca == 500 p,F, electrolytic, 6 V
Ca, Cu == 100 p,F, electrolytic, 25 V
C15, C'" = 10 pF, ceramic
disc, 25 V
ClT, ClB
330 pF, ceramic
disc, 25 V
C1. == 1000 p,F, electrolytic,
25 V
Coo = 100 p,F, electrolytic,
20 V
Cn == 100 p,F, electrolytic,
15 V
Fl = fuse, 1-ampere, 810-
=
=
=
=
blo
R1, 14 == 0.18 megohms. 0.5
watt
R2, Ra
bass control. potentiometer, 3 megohms,
0.5 watt, audio taper
Ro, Re, Roo, R"" == 1 megohm,
0.5 watt
&1 Rs = treble control, polentiometer, 3 megohms,
0.5 watt, audio taper
Ro, RlO == 100000 ohms, 0.5
watt
Rn, R12 180 ohms, 0.5 watt
R1a, R.. == volume control,
potentiometer,
1 5 00 0
ohms, tapped at 10000
ohms
RlII
balance control, potentiometer, 20000 ohIns,
0.5 watt
R",. R1T, Rs.. R .. == 10000
ohms, 0.5 watt
Rta, Rn ::: 47 ohms, 0.5 watt
=
=
=
=
R12, Roo 470 ohms, 0.5 watt
Ha., Has = 56000 ohms, 0.5
watt
Has. Ha. == 390 ohms, 0.5 watt
RaT, Roo. Has, Rs. 270 ohms,
0.5 watt
Ros, Roo, Rat, R .. = 3.9 ohms.
0.5 watt
Ras, R .., RaT, Has 0.51 ohm,
0.5 watt
R41 == 220 ohms, 0.5 watt
R .. == 2200 ohms, 0.5 watt
51 == ON-OFF switch, single-pole. single-throw
Tt, To
driver transformer,
Better Coil and Transformer Co. No. 99A4, Columbus Process Co. No.
7602. or equiv.
Ta
Power transformer,
Better Coil and Transformer Co. No. EX4744P,
Columbus Process Co. No.
8970, or equiv.
=
=
=
=
428
RCA Transistor Manual
LINE-OPERATED (AC/DC) 3-WAn
12-17
STEREO PHONOGRAPH AMPLIFIER
LEFT
CHANNEL(c+----~~~~
INPUT
+ -
Ria
R24
R25
C2
R26
RI9
R4
R27
BASS
CI5
+ -
~
RIGHT
CHANNEL(~----~~~~
INPUT
Ca
117V~~~
R30
- +
AC
51
R31
TYPE
40265
Circuit Description
This three-stage stereo phonograph amplifier operates directly
from either an ac power line or a
dc supply of 117 votts. AC power
inputs are converted to dc power
by the 40265 rectifier. When used
with a ceramic phonograph cartridge such as the Sonotone model
21-T or the Astatic model 17-D, the
amplifier can deliver cOl,l.tinuous
sine-wave power of 3 watts per
channel with a total harmonic distortion of 10 per cent or less at average record levels. At an output
level of 1 watt, distortion is 1.5 per
cent or less. The maximum. power
output (into hard clipping) is about
4.5 watts of power output per
channel.
The input stage in each channel
Circuits
12-17
429
LINE-OPERATED (AC/DC) 3-WATT
STEREO PHONOGRAPH AMPLIFIER (conYd)
Circuit Description (cont'd)
uses a high-gain, low-noise 2N2613
transistor in a common-emitter circuit configuration to provide a high
input impedance and to maintain a
constant input sensitivity for the
amplifier over a wide range of variation in transistor parameters. The
emitter output from each 2N2613 is
applied to the base of a 2N2614
transistor operated in an emitterfollower configuration that develops
the driving power for direct coupling
to the output stage. With this arrangement, the emitter current in
the output stage is maintained relatively constant for a wide range of
transistor parameters and for normal
variations in line voltage. The
2N2614 driver transistors provide a
phase reversal which tends to cancel any variation in output-stage
idling current with changes in temperature.
Each output stage of the amplifier employs two 40264 high-voltage
silicon power transistors in a class
A push-pull configuration. Because
both output-stage transistors are
biased with a constant emitter current, dc unbalance in the output
transformer is negligible. There-
fore, a low-cost, %-inch output
transformer can be used.
The sensitivity of the amplifier is
such that full rated power output
may be obtained for an input less
than 425 millivolts. Any 800-to-1500picofarad ceramic cartridge that
provides an output from 250 to 600
millivolts may be used. The RIAA
frequency response of the circuit
(between the 3-dB-down points) extends from 100 to 9500 cis with the
tone controls in the fiat position.
Treble boost and cut are obtained
from a tap on the volume control.
Boost or cut of 9.5 dB is available
at normal listening levels. Negative
feedback from the speaker terminals to the base of each 2N2613 input transistor provides a bass boost
of about 6 dB at 100 cis. This feedback permits the use of bass-cut
controls (R. and R.) which load the
cartridges at low frequencies in the
fiat position. As a result, bass boost
of about 9 dB and bass cut of about
15 dB are available at 100 cIs at
normal listening levels. Because the
feedback is a function of the source
impedance, it does not appreciably
affect the full-volume sensitivity.
Parts List
C125=V1OO p.F, electrolytic,
C. = 0.05 p.F, paper, 200.V
Co, C. = 180 pF, ceraUllC,
25V
C., Co = 390 pF, ceramic,
25V
Or, C. = 82 pF. ceramic,
. 25 V
c., ClD = 0.1 p.F, ceramic
disc, 25 V
Cn, C12
5 p.F, electrolytic,
6V
C12, C,. = 2200 pF, paper,
400 V
Cu, Cll!
500 p.F. electrolytic, 3 V
Cu. C18 = % dual section.
100 p.F. electrolytic. 250 V
R" a. = 5.6 megohms. 0.5
=
=
watt
Ro. R.. RlS. R16 = 82000
ohms, 0.5 watt
Ro. R. = bass control. dual
potentiometers. 5 megohms. 0.5 watt. audio
taper
R •• Re = treble control. dual
potentiometers. 5 megohms. 0.5 watt. linear
taper
Re. R,o
volume control.
concentric potentiometers.
3 megohms. 0.5 watt.
tapped down 0.9 megohm. linear taper
Rn. Rg
3.9 megohms. 0.5
watt
Ru. R,a
1.5 megohms. 0.5
watt
=
=
=
=
=
R,.. Roo
1500 o~ ±
5%. 0.5 watt
R,s. R,.
75000 ohms ±
5%. 0.5 watt
Rot. R.. = 8200 ohms, 0.5
watt
Roo
22000 ohms. 0.5 watt
Rot. R2'I
82 ohms. 0.5 watt
Roo. a..
200 ohms ±
5%. 0.5 watt
Roo. a.. = 180 ohms ±
5%, 0.5 watt
Roo = 56 ohms, 0.5 watt
Ra. = 4.7 ohms. fuse resistor
S. = ON-OFF switch. single-pole. single-throw
T,. T. audio output transformer. Columbus Process
Co. No. X-9445 or equiv.
= =
=
=
RCA Transistor Manual
430
THREE-STAGE 5-WATT STEREO
PHONOGRAPH AMPLIFIER
IHFM Music Power Rating lOW Per Channel
12-18
O
-15V
ISI
"~
.
I
Circuit Description
This three-stage amplifier delivers
a sine-wave power output of 5 watts
per channel to an 8-ohm speaker; its
IHFM music power rating is 10
watts per channel, or 20 watts total.
The amplifier develops full rated
power output from each channel
with very little distortion, and clips
at a level of 8 watts for a l-kcl s input. At average record levels, full
output of 5 watts per channel is obtained for a drive input provided by
Circuits
12-18
431
THREE-STAGE 5-WATT STEREO
PHONOGRAPH AMPLIFIER (cont'd)
Circuit Description (cont'd)
a typical 0.5-volt, lOOO-picofarad
ceramic phonograph pickup.
Each channel of the amplifier consists of a low-noise 2N2613 input
stage, a 2N2953 driver stage, and a
class B output stage using two
40050 power transistors. The high
input impedance of the 2N2613
stages eliminates the need for equalization of the ceramic pickup, and
also permits the use of simple fullrange treble controls R. and R. that
have zero insertion loss. The zeroinsertion-loss bass controls R. and
R3 provide bass-cut action by loading the ceramic pickup at low frequencies. The combination of this
action and the bass-boost action provided by the feedback loops is similar to that of a conventional cutand-boost control.
The loudness controls R,. and R,•
are interlinked with the input-stage
feedback loops. Because the amount
of feedback below 1 kcf s is proportional to frequency, the frequency
response of the input stage can be
controlled, to a limited degree, by
the loudness setting. When the loud-
ness setting is decreased, the feedback becomes higher at the mid and
high frequencies than at low frequencies. In this way, the loudness
controls and the frequency-sensitive
feedback provide a bass-boost action
at reduced loudness settings. The
boost from the loudness controls
(tone controls flat) is 18 dB at low
settings.
The power supply consists of a
full-wave rectifier using 1N2859 rectitier diodes. A capacitive voltage
divider provides the required dc
voltages. The center of the capacitive divider is grounded so that both
positive and negative voltages are
obtained with respect to ground. Because the dc voltage drop across
each transistor in the output stage
is the same, the dc voltage coupled
to the speaker terminal is essentially zero and no coupling capacitor to the speaker is required. The
ripple components to the speaker
from the positive and negative terminals of the power supply are equal
and out of phase, and thus cancel
each other.
Parts List
Cl. c. = 180 pF. ceramic
disc
Ca. C. =: 1800 pF. ceramic
disc
C•• C.
0.005 p.F. ceramic
disc
C.. C. =: 5 p.F. electrolytic.
6V
C•• C'0 = 0.47 p.F. ceramic
Cn. Cl.O
4 p.F. electrolytic.
3V
Cm. C,. =: 22 pF. ceramic
disc
Cu. C15 ;= 10 p.F. electrolytic. 6 V
C17. C18 =: 0.001 p.F. ceramic
Cw. Coo
1000 p.F. electrolytic. 15 V
COl =: 100 p.F. electrolytic.
15 V
CO2
3000 p.F. electrolytic.
10V
F1
fuse. 1-ampere. sloblo
B,. B.
0.1 megohm. 0.5
watt
=
=
=
=
=
=
Ro. B.
=: bass control. dual
potentiometers. 3 me~
ohms. 0.5 watt. audlO
taJ:ler
Ro. He
0.82 megohm. 0.5
watt
B •• B,0. R2O. B.s 4700 ohms.
0.5 watt
R •• Ro = treble control. dual
potentiometers. 3 megohms. 0.5 watt. audio
taper
Ru. R12 =. 82000 ohms. 0.5
watt
R,.. R,.
68000 ohms. 0.5
watt
Ru. R15 = 0.56 megohm. 0.5
watt
R,•• R,. = loudness control.
dual potentiometers.' 15000
ohms. 0.5 watt. linear
taper; tapped at 10000
ohms
Rt•• &0 470 ohms. 0.5 watt
Rat
balance control. potentiometer. 5000 ohms.
=
=
=
==
0.5 watt. S taper
n.. = 0.22 megohm. 0.5
Baa.
watt
=
R2O. n... R2O. H2o
47000
ohms. 0.5 watt
Roo. Baa. Baa. n..
22 ohms.
0.5 watt
Rat. R... R... R.. = 1800
ohms. 0.5 watt
B.s. B.s. Boo. &1 0.27 ohm.
0.5 watt
R ... =: 180 ohms. 0.5 watt
B ..
560 ohms. 0.5 watt
B.. =: 100 ohms. 0.5 watt
8, == ON-OFF switch. single-pole. single-throw
T,. T. == driver transformer.
Columbus Process Co.
No. 7602. Better Coil
and Transformer Co. No.
99A4. or equiv.
T. == power transformer.
Columbus Process Co.
No. XS441. Better Coil
and Transformer Co. No.
99P9. or equiv.
=
=
=
RCA Transistor Manual
432
HIGH-QUALITY 1S-WATT STEREO AMPLIFIER
IHFM Music Power Rating 25 W Per Channel
12-19
-15 V
-16 V -22 V
RII
PH-AI
I
I
I
I
I
I
I
I
I
I
C3
GND.BUS
I
I
I
I
I
I
I
PH-B I
c>--<> i.P-<,-,,/IIIr"VIIIN-f-r
I
RL=80HMS
~
O-----<.......... o-H I
CHASSIS
-15 V
-16 V -22 V
_22 V
-16V
r l__...,..---+-.oVI.IIr-+-.'VV'.r--t__----15 V
+22 V
CHASSIS
Circuit Description
This four-stage amplifier is designed for' operation with either a
ceramic phonograph pickup or an
FM-stereo type of input. At the
clipping level, the amplifier can supply sine-wave power output of 15
Circuits
12-19
433
HIGH-QUALITY 15-WATT STEREO AMPLIFIER
Circuit Description (cont'd)
watts per channel to an 8-ohm
speaker; its IHFM music power rating is 25 watts per channel, or 50
watts total. Sensitivity is such that
each channel supplies full rated
power output to the speaker for an
input of 0.28 volt.
Each channel consists of a lownoise 2N2613 input stage, a 2N2614
preamplifier stage, a 2N591 driver
stage, and a class B output stage
employing two 40051 alloy-junction
power transistors. As in the 5-watt
stereo amplifier in circuit 12-18, the
high input impedance of the 2N2613
stages eliminates the need for equalization of the ceramic pickup and
also permits the use of simple, fullrange treble controls R. and R. that
(conrd)
have zero insertion loss. The fullrange, insertion-loss type of cutand-boost bass controls R.. and R2'I
operate in conjunction with the feedback around the 2N2614preamplifier stage. This method of bass
control provides the required bass
action and simultaneously improves
the performance of the preamplifier.
The loudness controls R13 and R..
are interlinked with the input-stage
feedback loop. As in the 5-watt am'plifier of circuit 12-18, the frequency
response of the input stage can be
controlled, to a limited degree, by
the loudness setting. The power supply for this 15-watt stereo amplifier
is similar to that for the 5-watt
amplifier in circuit 12-18.
Parts List
C"
c.
= 180 pF, ceramic
Ca, C., CG, C. := 1800 pF,
ceramic
OrioC{r= 2 p,F, electrolytic,
Co. ClO, Cll, Cu. C19t em
=
5 !iF, electrolytic, 3 V
C'3' ~1< = 5 p,F, electrolytic,
C15, C16 := 0.5 p,F, ceramic
C16, C.. := 4 p,F, Mylar
Cn, C.. = 47 pF, ceramic
CO2, C•• := 50 p,F, electrolytic, 3 V
C... C.. := 1000 p,F. electrolytic. 25 V
C2'I
250p,F. electrolytic.
20 V
Co. := 10000 p,F. electrolytic.
15 V (or equiv.)
F,. F.
fuse. 3-ampere
F. = fuse. I-ampere, slo-blo
R,. Ro ·Rn. R'0
1 megohm.
0.5 watt
R.. R. := treble control.
dual potentiometers. 3
megohms. 0.5 watt, audio
taper
=
=
=
RG, Ro = 0.1 megohm. 0.5
watt
R., R. := 0.22 megohm, 0.5
watt
Rll. R19
4700 ohms, 0.5
watt
R,., RH = loudness control.
dual potentiometers. 25000
ohms, 0.5 watt. linear
taper
R15. R,.
27000 ohms, 0.5
watt
R.., R16
33000 ohms, 0.5
watt
R... Roo := 1000 ohms, 0.5
watt
Rn, R.. = 10000 ohms, 0.5
watt
R ••, Ros = 270 ohms, 0.5 watt
R... R2'I = bass control, dual
potentiometers, 5000 ohms,
0.5 watt, audio taper
R25, R .. := 39 ohms, 0.5 watt
Ros.:= balance control. potentiometer, 5000 ohms,
0.5 watt, 5 taper
Roo. R.. := 0.12 megohm, 0.5
watt
=
=
=
Rn, R.. = 1500 ohms, 0.5
watt
R .., R..
12000 ohms, 0.5
watt
Rso. R.. := 15000 ohms. 0.5
watt
R .., R.., R .., R.s
560
ohms,l watt
.Rso, R<1, R .., & = 3.9 ohms.
0.5 watt
R.., Ro., R.., Ro.
0.27 ohm,
0.5 watt
Roo = 330 ohms. 2 watts
R51
100 ohms, 0.5 watt
Rso := 82 ohms, 0.5 watt
5, := selector switch, doublepole, double-throw
5. := ON-OFF switch, single-pole. single-throw
T,. T.
driver transfonner.
Columbus Process Co. No.
X7602. Better Coil and
Transfonner
Co.
No.
99A4. or equiv.
T. = power transfonner,
Columbus Process Co.
No. 7603. Better Coil and
Transfonner
Co.
No.
99P3. or equiv.
=
=
=
=
=
RCA Transistor Manual
434
12-20
27-Mc/s, 5-WATT CITIZENS-BAND TRANSMITTER
RF OSC.
RF POWER
AMPLIFIER
RF DRIVER
CII
C9
MODULATOR
TO
MIC
o--:llJ..-__4-l
CI3
=
+11 TO 15V
+
C2~
NOTE: The 40082 transistor used in the rf power amplifier should be mounted on a good
heat sink.
Circuit Description
This transmitter operates directly
from a 12-volt supply without the
need for dc-to-dc converters, and is
thus adaptable to mobile operations
employing 12-volt systems. Its low
power drain also makes it adaptable
to portable use with small storage
batteries.
The rf section of the transmitter,
which consists of a 40080 crystalcontrolled oscillator, a 40081 driver,
and a 40082 power amplifier, de-
Circuits
435
27-Mc/s 5-WATT
12-20
CITIZENS~BAND
Circuit Description (cont'd)
velops 5 watts of rf power output
at 27 Mcl s. Both the driver and
the power amplifier are modulated
to achieve 100-per-cent amplitude
modulation.
The 40080 crystal-controlled oscillator stage is a Colpitts type of
circuit that provides excellent frequency stability with respect to
collector supply voltage and temperature (well within the 0.005-percent tolerance permitted by F.C.C.
regulations) and delivers a minimum
rf power of 100 milliwatts to the
input of the driver stage.
The 40081 driver stage uses a
class C common-emitter configuration. The modulation input is applied
to the collector circuit. This stage
delivers a minimum of 400 milliwatts of modulated rf power to the
power amplifier. A heat dissipator
should be mounted on the case of
the 40081. The 40082 power-amplifier
TRANSMITTER (cont'd)
stage also uses a class C commonemitter configuration and is modulated through the collector circuit.
The double-... network used as the
output resonant circuit provides harmonic rejection of 50 dB, as required
by F.C.C. regulations. The minimum
rf power output supplied to the antenna from the power amplifier is
3 watts.
In the audio (modulator) section
of the transmitter, two 2N591 class
A amplifier stages are used to drive
a class AB push-pull output stage
using two 2N2869/2N301 transistors. This design provides maximum
efficiency with low distortion. A
1N2326 compensating diode is used
in the biasing network to provide
thermal stability. The modulation
transformer T. is designed to match
the collector-to-collector load impedance of the modulator to the
impedance of the rf driver and
power-amplifier stages.
Parts List
c. = 75 pF. ceram!c
C.
30 pF. ceraInlC
C •• C•• C.
0.01 JLF. ceramic
C. = 47 pF. ceramic
Co
51 pF. mica
C. = 24 pF. mica
C. = 0.01 p.F. ceramic
C,O = variable capacitor, 90
to 400 pF (ARCO 429. or
equiv.)
Cll
100 pF. ceramic
CJ..2
220 pF. ceramic
C••
5 p.F. ceramic
Cu. C17 = 50 p.F. electrolytic. 25 V
C..
10 p.F. electrolytic.
15 V
Cl.. C18 = 10 p.F, ceramic
C19, Coo
0.2 JLF. ceramic
COl
0.1 JLF. ceramic
C..
500 p.F. electrolytic.
15 V
Lt, r.. = rf choke. 15 JLF
(Miller 4624. or equiv.)
=
=
=
=
=
=
=
=
=
=
= variable inductor (0.75
to 1.2 p.H) ; 11 turns No. 22
wire wound on ~~-inch
CTC coil fonn having a
"green dot" core; Q = 120
L. = variable inductor (0.5
to 0.9 p.H); 7 turns No. 22
wire wound on ~!o-inch
CTC coil fonn having a
"green dot" core; Q = 140
R. = 510 ohms. 0.5 watt
Ro, Rl. = 5100 ohms.
0.5 watt
Ro
51 ohms. 0.5 watt
R. = 120 ohms. 0.5 watt
R. = 47 ohms. 0.5 watt
R. = 0.1 megohm, 0.5 watt
R1 = 10000 ohms, 0.5 watt
Rs
2000 ohms, 0.5 watt
R. = potentiometer, 10000
ohms
Rl0
3600 ohms, 0.5 watt
Rll 15000 ohms, 0.5 watt
R13 = 1000 ohms, 0.5 watt
R14 = 1200 ohms, 0.5 watt
R,.
240 ohms, 0.5 watt
La
=
=
=
=
=
Rl., Rl1 = 2700 ohms,
0.5 watt
R18, R,.
1.5 ohms, 0.5 watt
TI = rf transfonner; primary 14 turns, secondary
3 turns of No. 22 wire
wound on %-inch CTC
coil fonn having a "green
dot" core;
slug-tuned
(0.75 to 1.2 p.H); Q
100
T. = rf transfonner; primary 14 turns. secondary
2-% turns of No. 22 wire
wound on ~!o-inch CTC
coil fonn having a "green
dot"
core;
slug-tuned
(0.75 to 1.2 p.H); Q
100
T. = transfonner; primary:
2500 ohms; secondary 200
ohms center-tapped; Microtran SMT 17 -SB or
equiv.
T. = transfonner; primary:
100 ohms center-tapped;
secondary: 30 ohms
=
=
=
NOTE: See general considerations fDr" cDnstructlDn Df high-frequency and broadband circuits
Dn pege 391.
436
RCA Transistor Manual
12-21
50-Me/s 40-WAn CW TRANSMlnER
With Load-Mismatch Protection
OSCILLATOR
LOW-LEVEL AMPLIFIER
DRIVER
XTAL
c::J
=
OUTPUT
(50 OHMS)
Ce
=
Circuit Description
This cw transmitter uses a VSWR
bridge circuit to maintain a steadystate dissipation in the output stage
under all conditions of antenna mismatch. This technique makes it possible to realize the full power potential of the 40341 overlay transistor
used in the output stage.
The 50-Mel s crystal-controlled
2N3118 oscillator stage develops the
low-level excitation signal for the
transmitter. The 50-Mc/s output signal from the collector of the oscillator transistor is coupled by La to
the base of a second 2N3118 used
in a predriver stage (low-level am-
437
Circuits
12-21
50-Me/s 4O-WATT CW TRANSMITTER (eonrd)
Circuit Description (cont'd)
plifier). This step-down transformer
matches the collector impedance of
the oscillator transistor to the lowimpedance base circuit of the predriver transistor. The collector circuit of the predriver is tuned to
provide .maximum signal output at
50 Mc/s. This signal is coupled from
a tap on inductor L. to the input
(base) circuit of the driver stage,
which uses a 2N3375 silicon power
transistor to develop the power required . to drive the output stage.
The 40341 overlay transistor used
in the output stage develops 40 watts
of power output at the transmitting
frequency of 50 Mc/s. The driving
power for the output stage is
coupled from the collector of the
driver transistor through a bandpass
filter to the base of the output transistor. The filter networks in the
collector circuit of the 40341 provide the required harmonic and
spurious-frequency rejection. The
50-Mc/s output from these filter
sections is coupled through a length
of 50-ohm coaxial line to the antenna. Capacitors C., C., and C,.
are adjusted to provide optimum
impedance match between the transmitter and the .antenna.
The output of the transmitter is
sampled by a current transformer
(toroid) T, loosely coupled about the
Parts List
=
=
=
=
=
=
output transmission line. This transformer is the sensor for a VSWR
bridge detector used to prevent excessive dissipation in the output
stage under conditions of antenna
mismatch. If the antenna is disconnected or poorly matched to the
transmitter, large standing waves of
voltage and current occur on the
output transmission line. A portion
of this standing-wave energy is applied by T1 to the 1N3067 diode in
the bridge circuit. The rectified current from this diode charges capacitor Cl8 to a dc voltage proportional
to the amplitude of the standing
waves. This voltage, which is essentially an agc bias, is applied to the
base of the 2N3053 agc amplifier
stage. The output of the agc stage
biases the 2N3118 predriver stage
so that its gain changes in inverse
proportion to the amplitude of the
standing wave on the output transmission line. Therefore, as the amplitude of the standing waves increases (tending to cause higher
heat dissipation in the output transistor), the input drive to the output stage is reduced. This compensating effect maintains a steady-state
dissipation in the output transistor
l'egardless of mismatch conditions
between the transmitter output circuit and the antenna.
C,
variable capacitor, 90
Ls, L7, L9, LID, Lll == rf
C15
variable capacitor.
to 400 pF, Arco No. 429
14 to 150 pF, Arco No.
choke. 7 p,H
or equiv.
426 or equiv.
L.
4 turns of B & W No.
Ca
51 PF, mica
C17
1000 pF. ceramic
3006 coil stock
C.
30 pF, ceramic
C18
0.01 p,F. ceramic
L. == 6 turns of No. 16 wire;
c., Cs, Cu, Cu. C19. C..
COl = variable capacitor,
inner diameter, % inch;
feedthrough
capacitor.
32 to 250 pF, Vitramon
length, %. inch
1000 pF
No. 464 or equiv.
RI, R.
510 ohms, 0.5 watt
C.
viiriable capacitor, 1.5
LI
1 turn of No. 16 wire;
R. = 3900 ohms, 0.5 watt
to 20 pF. Arco No. 402
inner diameter, %6 inch;
Ra, R. = 2.2 ohms, wireor eqwv.
length, % inch
wound, 0.5 watt
C. = 36 pF, mica
La
rf choke, 1 p,H
R. = 51 ohms, 0.5 watt
Cs, C18, C..
0.02 p,F,
L.
oscillator coil; priRa == 24000 ohms, 0.5 watt
mary, 7 turns; secondary,
ceramic
R. = 240 ohms, 0.5 watt
I-%. turns; wound from
R.
agc control, potenC•• C10
variable ca~acitor,
No.
22
wire
on
CTC
coil
tiometer, 50000 ohms
~r to ~f.F. Areo o. 404
form having "white dot"
RIO
5.6 ohms, 1 watt
core
C.a ~1 pF. mica
TI = current transformer
(toroid), Arnold No. A4C1S
variable capacitor,
L. == 5 turns of No. 16 wire;
0.9 to 7 pF. Vitramon No.
437-125-SF. or equiv.
inner diameter, %6 inch;
400 or equiv.
length. % inch
NOTE: See general considerations for construction of high-frequency and broadband circuits
Oil page 391.
=
=
=
=
=
==
=
=
==
=
=
,438
12-22
RCA Transistor Manual
17S-Mc/$ 3S-WATT AMPLIFIER
DRIVER
LOW-LEVEL AMPLIFIERS
439
Circuits
175-Mc/s 35-WATT POWER AMPLIFIER (cont'd)
12-22
Circuit Description
This four-stage rf power amplifier
operates from a dc supply of 13.5
volts and delivers 35 watts of power
output at 175 Mcl s for an input of
125 milliwatts. The silicon overlay
transistors used in the amplifier
supply maximum output power at
this level of dc voltage for use in
mobile systems.
The low-level portion of the amplifier consists of three unneutralized, class C, common-emitter rf
amplifier stages interconnected by
band-pass filters tuned to provide
maximum transfer of energy at 175
Mcl s. The 40280 input stage develops
1 watt of power output when a 125milliwatt 175-Mcl s signal is applied
to the amplifier input terminal. This
output is increased to 4 watts by
the 40281 transistor used in the second stage. The 40282 driver transistor then develops 12 watts of driving power for the output stage.
When the low-level stages and the
output stage are mounted on separate chassis, the output from the
driver stage is coupled to the output
stage through a low-loss coaxial
line. The line is terminated by variable capacitors C15 and C,• and inductor Ln. The capacitors are adjusted to assure a good impedance
match between the output of the
driver and the input of the output
stage at 175 Mcl s. The driving signal developed across inductor Ln is
applied to the tuned input networks
of three parallel-connected 40282
transistors in the single-ended output stage. For an input of 12 watts,
the three 40282 transistors deliver
35 watts of 175-Mcl s power to the
output terminal of the amplifier.
Capacitors Coo and C'1 are adjusted
to match the amplifier output to the
load impedance at the operating
frequency.
Parts List
c.
=
variable capacitor, 3
to 35 pF, Arco No. 403,
or equiv.
CJh Cs, ClO, Cl'l', C18t Cl9. C27
= variable capacitor, 8 to
60 lIF, Arco No. 404, or
eqUlV.
C., Co, Cll
0.1 JLF. ceramic
disc
C., Co, Ca, C.., C.., C.. =
feedthrough capacitor,
1500 pF
Cs, ClO, C13. C14. C26
variable capacitor. 7 to 100
pF, Arco No. 423, or
equiv.
C.
variable capacitor, 14
=
=
=
to 150 pF, Arco No. 424
or equiv.
= variable capacitor, 1.5
to 20 pF, Arco No. 402
or eqUlV.
Coo, C•• , C.. = 0.2 JLF,
ceramic disc
L1
2 turns of No. 16 wire;
inner diameter, %6 inch;
length, ~~ inch
L., L., La = 450-ohm ferrite
rf choke
L., Lo, Lll
rf choke, 1.0
JLH
L., Lt = 3 turns of No. 16
wire; inner diameter. %6
C15
=
=
inch; length, ~~ inch
Lo
1-% turns of No. 16
wire; inner diameter, ~~
inch; length. % inch
L,o = 2 turns of No. 16 wire;
inner diameter, ~~ inch;
length, %6 inch
La, L,., L14
5 turns of No.
16 wire; inner diameter,
~~ inch; length, % inch
L15, L,•• L..
2 turns of No.
18 wire; Inner diameter,
% inch; length, % inch
L•• , L,., Loo 2 turns of No.
16 wire; Inner diameter,
~4 inch; length, ~~ inch
=
=
=
=
NOTE: See aeneral eonsiderations for construction of hiah-frequency and broadband cireuits
on page 391.
RCA Transistor ·Manual
440
12-23.
27-Mc/s CRYSTAl. OSCILLAT.OR
Output 4. mW
OUT.pUT
(LOAD =
L2 50-100
OHMS)
Circuit Description
This crystal-controlled oscillator
provides a stable 4-milliwatt output
at 27 Mcl s. The circuit operates from
a 20-volt, 7-milliampere dc supply.
A 2N1491 common-emitter circuit
amplifies the signal from the 27Mcl s crystal to develop -the rated
power output. The combined effects
of the base-bias network C1 and R1
and the emitter-bias network C•. and
R. bias the transistor for class C
operation to prevent excessive loading of the collector resonant circuit
L. and Ca. The use of crystal control
Parts List
Ct
20 pF, ceramic. disc,
=
25 V
C., C.
0.01 p,F, ceramic
disc, 25 V
Ca
22 pF, ceramic disc·,
25 V
=
=
=
assures excellent frequency stability
for -the oscillator. Positive feedback
is coupled from the collector to the
base of the 2N1491 across the capacitance of the crystal to sustain
oscillations.
The 27-Mc/s oscillator signal developed across L, is inductively
coupled. by L2 to the load circuit. The
transformation provided by L. and
L2 adequately matches the collector
impedance of the transistor to a load
impedance of 50 ·to 100 ohms.
Ll
15 turns No. 22 enam.,
close-wound on CTC LS5
form (powdered-iron
slug)
Ls
2 turns No. 18 enam.,
wound over cold end of
=
L1
R1 = 9100 ohms, 0.5 watt
Ra = 680 ohms, 0.5 watt
Ra
200 ohms, 0.5 watt
XTAL = crystal, 27 Mcts
=
Circuits
72-24
441
SOO-Me/s I-WATT POWER OSCILLATOR
Circuit Description
This power oscillator operates
from a portable battery supply of
28 volts and delivers 1 watt of rf
power output at 500 Mcl s. The reverse voltage to bias the 2N3553
transistor for class C operation, as
required in this Colpitts-type oscillator, is developed across the emitterto-base resistance-capacitance network C" Co, CG, R" Ro, and R.. The
resonant circuit consisting of inductor L. and tuning capacitors C" C"
and C. forms a selective emitter-tocollector load impedance for the
2N3553, and resonates to generate
a continuous 500-Mcl s signal when
energy is applied to the circuit.
The capacitive voltage divider C.
and C. assures that the proper
amount of feedback signal is developed during each oscillator cycle.
When the feedback voltage developed
across capacitor C. is large enough
and in the correct polarity to ·overcome the fixed bias, current flows
through the 2N3553. RF chokes L,
and L. and .bypass capacitor C. prevent rf components of the transistor
current from flowing into the dc circuit. The rf current is shunted
through the oscillator resonant circuit and used to replenish the energy
lost or coupled from the circuit during each cycle.
The oscillator output is inductively coupled to the load by La
and L" which consist of two parallel
brass rods spaced % inch apart.
Each rod is 1-~ inches in length
and %6 inch in diameter. The output
is delivered to the load through capacitor C, and a low-loss coaxial
cable. The value of C. is selected to
provide optimum match between the
oscillator and the load impedance.
Parts List
Ct =: 500 pF. ceramic disc
C. =: 0.01 JLF. ceramic disc
C.. C•• C. =: variable capacitor. 1.5 t'I> 20 pF. Arco
402 or equiv.
C. =: variable capacitor. 0.9
to 7 pF. Vitramon No. 400
or equiv.
C. =: 50 pF. ceramic disc
L,. L. =: rf chokes. 0.22 JLH.
Nytronics No. 60Z189 or
equiv.
parallel brass rods.
Le. L.
=
1 %. inches in length. %6
inch in diameter. separated by % inch
Rt =: 1800 ohms. 0.5 watt
a. 75 ohms. 0.5 watt
Rs =: 2700 ohms. 0.5 watt
=
RCA Transistor Manual
442
GRID-DIP METER
For Measuring Resonant Frequencies from 3.5 to 1000 Mel s
12-25
Parts List
=
B
13.5 volts. RCA VS304
C. = 33, pF, mica, 50 V
C.
O.Oll'F, paper, 50 V
C.
5 pF, lll1ca, 50 V
C.
0.01 p.F, paper, 50 V
C. = variable capacitor, 50
pF (Hammarlund type
HF-50 or equivalent)
=
=
=
= phone jack, normally
ebsed
= plug-in coil
M =- mieroammeter, 0 to 50
J
L
p.A (Simpson model 1227
or eluivalent)
R. = variable le3istor, 0-0,~5
megoiJm, 0,5 watt
R.
220 ohms, 0.5 watt
R,
3,000 ohms, 0,5 watt
R,
3,£00 ohms, 0.5 watt
R"
39,000 ohms, 0.5 watt
X
jumper, omit for measurements below 45 Me
=
=
=
=
=
Coil-Winding Data
Coil Freq. Range
Wire Size
1 3.4-6.9 Me/s
#28. enamel
2 6.7-13.5 Me/s
#24, enamel
3 13-27 Me/s
#24, enamel
4 25-47 Me/s
#24, enamel
5 46-78 Me/s
#24, enamel
6 74-97 Mels
#16, tinned
Coil forms are Amphenol
type 24-5H or equIvalent.
Circuit Description
This grid-dip meter determines
the frequency of resonant circuits
quickly and accurately. Basically, it
consists of a 2N1178 common-base
rf oscillator stage that can be tuned
over a wide frequency range. A
1N34A diode, and a dc microammeter
are used to show when rf power is
being absorbed from the oscillator
tuned circuit. The dc power for the
oscillator is obtained from a 13.5volt miniature battery such as the
RCA VS304.
Inductor L and capacitor C. form
the oscillator resonant circuit. Feedback to sustain oscillations in the
No. of Turns
48~~, close wound
22, close wound
9~a,
4~8,
H~,
close wound
close wound
close wound
r...airpin f~!'rec:!. 118 inches
long including pins. and ~~
inch wide
l'tlsonant circuit is coupled by capacitor C:, from the collector to the
emitter of the 2N1178. RF voltage
in the emitter-to-base circuit is
coupled by C, to the 1N34A diode,
and the rectified output appears on
the dc microammeter. When power
is absorbed from the oscillator
resonant circuit, rf feedback is reducedand the reading on the microammeter decreases.
The coil used for inductor t is
~.elected for the operating frequency
desired. A frequency-tuning dial
mouni;ed on the same shaft with the
variable capacitor C. indicates the
Circuits
443
GRID·DIP METER (cont'd)
12-25
Circuit Description (cont'd)
operating frequency of the meter.
For measurement of the frequency
of a resonant circuit, a coil having
a suitable frequency range is inserted in the grid-dip meter, and
the meter control knob is adjusted
for a reading of about half-scale.
The meter is then tightly coupled
12-26
the tuning dial is rotated until a
dip in the meter reading occurs.
When transmitter tank circuits are
measured, the transmitter plate supply must be turned off to eliminate
danger of shock.
CODE· PRACTICE OSCILLATOR
Parts List
= 1.5-4.5 V (One to three
B
to the unknown tuned circuit, and
series-connected RCA
VS036 dry cells may be
used. depending upon the
volume level desired.)
=
C,. C.
0.01 p.F. paper,
150 V
H
Headphone. 2000-obm,
magnetic
Rl 2200 ohms. 0.5 watt
=
=
Ro = 27000 ohms. 0.5 watt
Ro 3000 ohms. 0.5 watt
R.
volume control potentiometer. 50000 ohms. 0.5
watt
=
=
Circuit Description
This simple audio oscillator operates from a dc supply of 1.5 to 4.5
volts, depending on the amount of
output desired. Magnetic headphones
provide an audible indication of keying. When the key is closed, the
2N 408 transistor supplies energy to
the resonant circuit formed by capacitors C, and C. and the inductance
of the headphones, and this circuit
resonates to produce an audio tone
in the headphones. Positive feedback
to sustain oscillation is coupled
from the resonant circuit through
C, and C. to the emitter of the
2N408. R. is adjusted to obtain the
desired level of sound from the
headphones.
RCA Transistor Manual
444
ELECTRONIC KEYER
Parts List
=
Cl, Co
1 1iF, paper (or
Mylar), 200 V
C.
0.47 pF, ceramic, 25 V
C.60~sV== 560 pF, ceramic,
=
C.60~.V= 330 pF, ceramic,
Cs!;OCi,= 0.01 pF, ceramic,
= 0.02 pF, ceramic,
Cu = 0.1 pF, ceramic, 50 V
Cu, C.. = 2000 1iF, electrolytic, 15 V
C1SO ~
=
C15
16 pF, electrolytic,
150 V
F
fuse, 1 ampere
I
indicator lamp No. 47
K
dc relay; .coil resistance
2500 ohms; operating
current
4 rnA
Rl = 39000 oluns, 0.5 watt
Ro, Ro, Ru, Roo 3900 ohms,
==
==
=
=
0.5 watt
Ro, R1B
18000 oluns,
0.5 watt
R., Ro
51000 ohms,
0.5 watt
Ro, Roo = potentiometer,
10000 oluns
R7, RlO = 22000 oluns,
0.5 watt
Rs, Roo
180 oluns, 0.5 watt
Rll, Rn
15000 ohms,
0.5 watt
R10, R19
33000 oluns,
0.5 watt
Ri<, R18, Roo, Roo = 27000
oluns, 0.5 watt
RlD. R.. 270 ohms, 0.5 watt
R17 = 68000 oluns, 0.5 watt
R .. = 100000 oluns, 0.5 watt
Roo
68 ohms, 0.5 watt
Roo 560 oluns, 0.5 watt
R27 = 1200 ohms, 0.5 watt
=
=
==
=
=
==
Ro8 = volume-control
potentiometer, 50000 ohms
R31, Ro.
10000 oluns,
0.5 watt
R ..
6800 ohms, 0.5 watt
Roo = 8200 oluns, 0.5 watt
Rao, Roo, R •• = 15000 oluns,
0.5 watt
Ra7, Roo
47000 ohms,
0.5 watt
R ..
10000 oluns, 1 watt
Sl = Vibroplex keyer,
or equiv.
So
toggle switch, doublepole, double-throw
S.
toggle switch; singlepole, single-throw
Tl = push-pull output transfonner (14000 ohm to
V.C.)
T.
power transfonner,
Stancor PS8415, PS8421,
;or equiv.
=
=
=
=
=
=
=
Circuit Description
This compact electronic keyer can
be used for automatic keying of a
cw transmitter at speeds up to 60
words per minute. Two multivibrator trigger circuits using 2N404
transistors automatically control the
dot and dash transmissions. A
"Vibro-Keyer", which is springloaded to the OFF position, selects
the type of transmission desired.
Unless the "Vibro-Keyer" is moved
to either the DOT ur the DASH po-
Circuits
12-27
445
ELECTRONIC KEYER (conYd)
Circuit Description (cont'd)
sition, both lnultivibrators are held
inoperative by the biasing action of
2N1302 clamping circuits.
When the "Vibro-Keyer" S1 is deflected to the DOT position, the first
2N1302 clamp transistor becomes inoperative, and the dot multivibrator
is allowed to operate as a freerunning circuit. Feedback circuits in
the multivibrator assure continued
operation, regardless of whether Sl
remains in the DOT position, long
enough to develop the square-wave
output that controls both the duration of the dot and the space that
follows it. When Sl is set to the
DASH position, both clamp transistors become inoperative. The dot
multivibrator and the dash flip-flop
then operate simultaneously. The
dash flip-flop is triggered by the
positive pulses from the dot multivibrator. The IN34A steering diodes
prevent triggering of the flip-flop by
negative pUlses. Because two positive pulses are required to produce
one complete cycle of output from
the flip-flop, the frequency of this
circuit is one-half that of the dot
multivibrator.
The square-wave outputs from the
dot multivibrator and the dash flipflop are coupled to two more 2N404
transistors used in an OR gate circuit. During the positive half-cycle
of the square-wave inputs, the OR
gate conducts to remove the cutoff
bias from the 2N647 relay amplifier, which controls the operation of
keying relay Klo The relay is then
energized, and its contacts close for
the period required to key the transmitter for the selected type of transmission. One section of K1 may be
used to mute the receiver during
key-down periods. Because the OR
gate circuit is keyed successively by
signals from the dot multivibrator
and the dash flip-flop in the formation of a dash, the duration of a
dash is three times that of a dot.
The keying speed of this electronic
keyer is determined by the fre-
quency of the dot multivibrator.
This frequency is adjustable by
means of potentiometer R.., which
varies the amplitude of the negative
dc voltage. As the negative voltage
at the armature of potentiometer
R. is increased to a maximum value
of 60 volts, the keying speed is increased to a maximum of 60 words
per minute. Potentiometer R. controls the ratio of "on time" to "off
time" of the dot multivibrator transistors, and thus determines the
duration of both dot and dash transmissions and the minimum spacing
between successive transmissions.
The over-all keying speed is not affected by this adjustment.
The electronic keyer may also be
operated as a semiautomatic key
("bug") when selecter switch S. is
placed in the SEMIAUTO position.
Dots are still produced automatically, but the automatic keying circuits are bypassed when S1 is moved
to the DASH position. The formation of dashes is then controlled
manually. When S. is in the MAN
position, a hand key (connected
across the terminals marked HAND
KEY) may be used for manual control of the keyer; the automatic keying circuits are then bypassed during the formation of both dots and
dashes.
The keyer operates from a 117volt, 60-c/s ac power input applied
through a step-down power transformer T•. The ac input voltage is
converted to the negative dc voltage used to control keying speed by
a IN2861 half-wave rectifier circuit.
Two other 2N2861 diodes are used
in a voltage-doubler circuit that operates from the 6.3-volt secondary
winding of transformer T. to produce the dc supply voltage for the
various circuits in the keyer. A
2N404 tone oscillator, which is gated
on by the relay-amplifier circuit,
provides an audible indication of
keying.
446
12-28
RCA Transistor Manual
POWER SUPPLY FOR AMATEUR TRANSMITTER
600 Volts; 300 Volts; Total Current 330 Milliamperes (Intermittent Duty)
LI _ __
~V
....._o + HV
.------='.!.jiiim~-.--
NOT USED
Appro••
600 V
RIO
r
t-.-iTnm~-_-~+
ApprOi.
300 V
111 V
60",
Parts List
Cl c.. c.. c. Co Ce C.Ce=
0.001 p.F. ceramic disc.
1000 V
C.. ClD. Cu. Cll! = 40 p.F.
electrolytic. 450 V
CRl CR. CRa CR, CR. eRe
cn. eRe = RCA-IN2864
F = fuse. 5 amperes
1= indicator laIrip
= relay; Potter and
Brumfield KAllAY or
equiv.
Lt = 2.8 henries. 300 InA;
5tancor C-2334 or equiv.
1.2 = 4 henries. 175 rnA;
5tancor C-1410 or equiv.
R,RoRoR.RaR.n.Ra=
0.47 megohm. 0.5 watt
K1
R. = 47 ohms. 1 watt
RlD Rll = 15000 ohms. 10
watts
Rll! = 47000 ohms. 2 watts
5, 5. = toggle switch, singlepole single-throw
T = power transformer;
5tancor P-8166 or equiv.
Circuits
12-28
447
POWER SUPPLY FOR AMATEUR TRANSMlnER (cont'd)
Circuit Description
This power supply uses eight
lN2864 silicon diodes in series-connected pairs in a bridge-rectifier
circuit to supply a 600-volt dc output from a 117-volt ac input. The
second set of diode pairs (CR.
through CR.) is also used in a conventional full-wave rectifier circuit
to supply a 300-volt dc output.
Series-connected pairs of diodes are
used to provide the rectification in
this circuit because the peak-inversevoltage rating of such combinations
is twice that of a single diode.
The operation of the power supply is controlled by two switches.
When the ON-OFF switch S, is
closed, the 117-volt 60-c/s ac input
power is applied across the primary
of the step-up power transformer
T,. The power supply does not become operative, however, until
switch S. is also closed. Relay K, is
then energized, and the closed contacts of the relay complete the
ground return paths for the powersupply circuits. Switch S. can be
used as a STANDBY switch for the
transmitter, or another switch may
be connected in parallel with S. so
that the standby-to-on function can
be controlled from a remote location.
During the half-cycle of ac input
for which the voltage across the
secondary winding of T, is positive
at the top end and negative at the
bottom end, current flows from the
bottom of the secondary through
diodes CR1 and CR. (which are
oriented in the proper direction),
out the KiA section of the relay contacts to ground, and then up through
bleeder resistors R ,• and R11 and the
external load connected in shunt
with the resistors to develop the 600volt output. The return flow is completed through filter choke L,., diodes
CR, and CR., and the entire secondary winding. During the next halfcycle of the ac input, the polarity
of the voltage across the secondary
reverses, and the current flows
through diodes CR. and CR., through
the bleeder resistors and the external
load circuit in the same direction
as before, and then through diodes
CR. and CR.. Capacitors C. and C,•
and choke L, provide the filtering to
smooth out the pUlsations in the
600-volt dc output.
For the 300-volt dc output, only
one-half the voltage across the secondary winding of T, is required.
The CR.-CR. and CR1-CR. diode
pairs are operated in a full-wave
rectifier configuration to provide this
output (diodes CR, through CR. are
not included in the 300-volt circuit.)
The current flow through the diode
pairs is the same as described before, but the current is directed from
the relay contacts up through bleeder
resistor R,• and the external load
circuit to develop the 300-volt output. The return flow is through
choke L. and the transformer center
tap. Capacitors Cl l and C12 and choke
L. provide the filtering for the 300volt dc output.
448
RCA Transistor Manual
"",VOLTAGE REGULATOR, SERIES TYPE
With Adjustable Output
. Line Regulation within 1.0%
Load Regulation within 0.5%
°2
TYPE
2N3055
Ra
+
+
-C2
INPUT
4O-50V
DC
Rg
R3
Parts List
Cl = 1 !iF. J!!.per, 25 V
Co50=V1oo P-F. electrolytic,
CR
= reference diode, 12 V
= a. =
=
. Rl
1200 ohms, 0.5 watt
Ro a.
0.1 ohm, 0.5 watt
Ro = 2000 ohms, 0.5 watt
R.
570 ohms, 0.5 watt
OUTPUT
22-30V
O-IOA
DC
RIO
R. = 270 ohms, 0.5 watt
Ro·RlO = 1000 ohms, 0.5 watt
Ro potentiometer, 1000
ohms, 0.5 watt
=
Circuits
12-29
449
VOLTAGE REGULATOR, SERIES TYPE
Circuit Description
In this series-type voltage regulator, regulation is accomplished by
varying the current through three
paralleled 2N3055 transistors connected in series with the load circuit.
A reverse-bias-connected Zener diode
provides the reference voltage for
the circuit. The voltage drop across
this diode remains constant at the
reference potential of 12 volts over
a wide range of current through
the diode.
If the output voltage tends to rise
for any reason, the total increase
in voltage is distributed across
bleeder resistors Rs, Rg, and R,0. If
potentiometer Rg, the output-voltage
adjustment, is set to the mid-point
of its range, one-half the increase in
output voltage is applied to the base
of the 2N3053 transistor QQ. This increased voltage is coupled to the base
of the 2N3053 transistor Q, by R 2 ,
the common emitter resistor for the
two transistors. The reference diode
CR and its series resistor R3 are
connected in parallel with the bleeder
resistors, and the increase in output voltage is also reflected across
the diode-resistor network. However,
because the voltage drop across CR
remains constant, the full increase
in voltage is developed across R3
and thus is applied directly to the
base of Q,. Because the increase in
voltage at the base is higher than
that at the emitter, the collector current of the transistor increases.
As the 2N3053 collector current of
Q, increases, the base voltage of the
2N1479 transistor Q, decreases by the
amount of the increased drop across
RIo .The resultant decrease in current
through the 2N1479 causes a decrease
in the emitter voltage of this transistor and thus in the base voltage of
the 2N3055 transistor Q2. Similar action by Q2 results in a negative-going
voltage at the base of each of the
three 2N3055 transistors Q3, Q5, and
Q7. As a result, the current through
these transistors, and through the
load impedance in series with them,
decreases. The decrease in load current tends to reduce the voltage
developed across the load circuit to
cancel the original tendency for an
increase in the output voltage. Similarly, if the output voltage tends
to decrease, the current through the
three paralleled 2N3055 transistors
and through the load circuit increases, so that the output voltage
remains constant.
RCA Transistor Manual
450
J2-30
VOLTAGE REGULATOR, SHUNT TYPE
Regulation 0.5%
INPUT
45TO 55V
DC
Circuit Description
This simple two-transistor shunttype voltage regulator can provide
a constant (within 0.5 per cent) dc
output of 28 volts for load currents
up to 0.5 ampere and dc inputs from
45 to 55 volts. The two transistors
operate as variable resistors to provide the output regulation. A 27-volt
Zener reference diode is used as the
control, or sensing, element for the
circuit.
With a 28-volt output, the reversebias-connected reference diode, CR,
operates in the breakdown-voltage
region. In this region, the voltage
drop across the diode remains constant (at the reference potential of
27 volts) over a wide range of reverse currents through the diode.
The output voltage tends to rise
with an increase in either the applied voltage or the load-circuit impedance. The current through resistor R. and reference diode CR
then increases. However, the voltage
drop across CR remains constant
at 27 volts, and the full increase in
the output voltage is developed
across R.. This increased voltage
across R. is directly coupled to the
base of the 2N1481 transistor and
increases the forward bias so that
the 2Nl481 conducts more heavily.
OUTPUT
2BV, 0 TO O.5A
DC
==
CR
reference diode, 27 V
1li
28 ohms. 10 watts (includes source resistance
of transformers. rectifiers.
etc.)
R2 = 1000 ohms. 0.5 watt
The rise in the emitter current of
the 2N1481 increases the forward
bias on the 2N1485, and the current
through this transistor also increases
As the increased currents of the
transistors flow through resistor R "
which is in series with the load impedance, the voltage drop across R,
becomes a larger proportion of the
total applied voltage. In this way,
any tendency for an increase in the
output voltage is immediately reflected as an increased voltage drop
across R, so that the output voltage delivered to the load circuit remains constant.
If the output voltage tends to decrease slightly, the voltage drop
across reference diode CR still remains constant, and the full decrease
occurs across R2. As a result, the
forward bias of both transistors decreases so that less current flows
through R,. The resultant decrease
in the proportional amount of the
applied voltage dropped across this
resistor immediately cancels any
tendency for a decrease in the out·
put voltage, and the voltage applied
to the load circuit again remains
constant.
Circuits
451
LIGHT MINDER FOR AUTOMOBILES
12-31
TO IGNITION
SPEAKER
~=F-"'---~-~lIrn
RI
R2
FOR NEGATIVEGROUND IGNITION
SYSTEMS
TI
o-~>-~~~__~r-__________~II~ER
FOR POSITlVEGROUND IGNITION
SYSTEMS
Parts List
= 0.22 I'F. electrolytic.
25 volts
= 30 1LF. 15 volts
R1
15000 ohms, 0.5 watt
&
680 ohms, 0.5 watt
Ct
Cs
=
=
S1 = switch. double-pole.
double-throw
Speaker
l~!.-inch permanent-magnet type; voicecoil impedance, 11 ohms;
Lafayette No. 99R6035 or
=
equiv.
Tl
=
~udio-output
trans-
former;
400-ohm primary. ll-ohm secondary;
Lafayette No. 99R6209 or
equiv.
Circuit Description
This light-minder circuit sounds
an alax:m if the lights of a car are
left on when the ignition is turned
off. The alarm stops when the lights
are turned off. When the lights are
intentionally left on for a period of
time, the alarm can be defeated so
that no warning sounds. The alarm
then sounds when the ignition
switch is turned on as a reminder
that the system has been defeated
and the switch should be returned
to its "normal" position.
The circuit is essentially an oscillator that obtains its supply voltage from two possible sources, the
ignition system or the light system
of the car. In the "normal" mode of
operation, the ignition system is connected to the collector circuit of
the 2N217 (or 2N647) transistor,
and the light system is connected
through the lN34 diode to the 2N217
(or 2N647) emitter. When the ignition switch is on, the collector of the
transistor is at the supply voltage.
If, at the same time, the lights are·
on, the emitter of the transistor is
also at the supply voltage. Because
both the emitter and the collector
are at the same voltage, the circuit
does not oscillate and no alarm
sounds. When the ignition is turned
off, the collector is returned to
ground through Rl and C" but the
emitter remains at the supply voltage and provides the necessary bias
for the circuit to oscillate. Turning
the lights out removes the supply
voltage and stops the oscillation.
In the "defeat" mode of operation, the ignition system is connected through the lN34 diode to
the emitter of the transistor, and
the light system is completely disconnected. The lights can then be
turned on without the alarm sounding. When the ignition is turned on,
it supplies the necessary voltage to
the emitter of the transistor to
cause the alarm to sound.
452
RCA Transistor Manual
BATTERY CHARGERS
For 6- and 12-Volt Automobile Batteries
12-32
TYPES
IN2860
TYPE
IN3754
+
FOR 6-CELL, 12 V
AUTOMOBILE
BATTERIES
FOR 3-CELL, 6 V
AUTOMOBILE
BATTERIES
Paris List
1sv SO
C
p.F. electrolytic.
fuse. I-ampere. 3 AG
pilot lamP. No. 1488
(12 V. ISO mAl for 12volt system or No. 47 (6
V. ISO mAl for 6-volt
system
R1
S ohms. 20 watts for
F1
b
=:
=:
=
12-volt system or 2 ohms.
2S watts for 6-volt system
& =: 33 ohms. O.S watt
R. =: 470 ohms. O.S watt
It.
ISO ohms. O.S watt
R. =: 1800 ohms. O.S watt
He
potentiometer. cutcff
=
=
adjustment, 10000 ohms,
2 watts
=: toggle switch, singlepole, single-throw. 3-ampere, 12S-volt
Tl =: power transformer.
5tancor No. RT-202. or
equiv.
5,
Circuits
12-32
453
BATTERY CHARGERS (confd)
Circuit Description
These battery chargers can be
used to recharge run-down batteries
in automobiles and other vehicles
without removing them from their
original mounting and without the
need for constant attention. When
the battery is fully charged, the
charger circuits automatically switch
from charging current to "trickle"
charge, and an indicator lamp lights
to provide a visual indication of this
condition.
12-Volt Battery Charger-This
circuit can be used to charge 6-cell,
12-volt lead storage batteries at a
maximum charging rate of 2 amperes. When switch S1 is closed, the
rectified current produced by the
four IN2860 silicon diodes in the
full-wave bridge rectifier charges
capacitor C1 through resistors Rl
and R2 and the No. 1488 indicator
lamp, I,. As C1 charges, the anode
of the IN3754 diode is rapidly raised
to a positive voltage high enough so
that the diode is allowed to conduct.
Gate current is then supplied to the
2N3228 SCR to trigger it into conduction. The SCR and the battery
under charge then form essentially
the full load on the bridge rectifier,
and a charging current flows through
the battery that is proportional to
the difference in potential between
the battery voltage and the rectifier
output. Resistor Rl limits the current to a safe value to protect the
IN2860 rectifier diodes in the event
that the load is a "dead" battery.
The energy stored in C1 assures that
the SCR conducts and, thereby, that
the charging current flows for practically the full 180 degrees of each
successive half-cycle of input until
the battery is fully charged. (The
SCR is actually cut off near the
end of each half-cycle but is retriggered shortly after the beginning
of each succeeding half-cycle by the
gate current applied through the
IN3754 diode as a result of the
steady potential on Cl.)
When the battery is fully charged,
the two-transistor regenerative
switch is triggered into conduction
(the triggering point is preset by
means of potentiometer R.). As a
result of the regenerative action, the
2N2614 and 2N3241 transistors in
the switch are rapidly driven to
saturation and thus provide a lowimpedance discharge path for Cl.
The capacitor then discharges
through these transistors and resistor R2 to about 1 volt (the voltage
drop across the transistors) . This
value is too low to sustain conduction of the IN3754 diode, and the
2N3228 SCR is not triggered on the
succeeding half-cycle of the input.
The saturated transistor switch also
provides a low-resistance path for
the current to the No. 1488 indicator
lamp, which glows brightly to signal
the fully charged condition of the
battery. The current in the lamp circuit (R"
lamp, and transistor
switch) provides a "trickle" charge
of approximately 150 milliamperes
to the battery.
6-Volt Battery Charger-This circuit can be used to charge 3-cell, 6volt lead storage batteries at a
maximum charging rate of 3.2 amperes. It is very similar to the 12volt battery charger except for the
rectifier configuration. In the 6-volt
circuit, the four 1N2860 diodes are
connected in a full-wave centertapped rectifier circuit that provides
the higher charging current of 3.2
amperes to the 6-volt battery. With
the . exception of the rectifier circuit, the indicator lamp, and the
value used for R" the 6-volt charger
is identical to the 12-volt charger
and operates in the same way.
454
RCA Transistor Manual
UNIVERSAL MOTOR SPEE.D CONTROL OR LIGHT DIMMER
12-33
INCREASE
SPEED
LOAD-
TRANSISTOR
SWITCH
cw
TYPES
IN2860
TYPE
2N3228
OR
TYPE
2N3669
RII
• Maximum load is 2 amperes when 2N3228 SCR is used or 12.5 amperes when 2N3669
SCR is used.
Parts List
=
F1 = fuse. 3-ampere (with
2N3228 SCR) or 15-ampere (with 2N3669 SCR)
R1 = 2 volts divided by
rated value of the load
C1
1.0 p.F'l.aper, 200 V
C215=V 50 JI. , electrolytic,
current (as given on
motor faceplate). The
load
current
squared
times the calculated value
of resistance plus a 50per-cent safety margin is
the recommended wattage
rating for the resistor.
R.
potentiometer, speed
adjustment, 0.1 megohm,
2 watts, linear taper
R.
100 ohms, 0.5 watt
=
=
=
R., R10
1000 ohms, 0.5
watt
= 5600 ohms, 0.5 watt
= 4700 ohms, 0.5 watt
R.
470 ohms, 0.5 watt
R. = 150 ohms, .0.5 watt
R.
15 ohms, 0.5 .watt
Rll
15000 ohms, 1 watt
Sl
tog~le switch. singlepole, smgle-throw
&
&
=
=
==
Circuit Description
This circuit can be used to provide
both speed control and speed regulation (constant speed under conditions of changing loads) for ac/dc
universal motors which have nameplate current ratings up to two amperes with a 2N3228 SCR or up to
12.5 amperes with a 2N3669 SCR.
Motor speed can be adjusted from
complete cutoff to essentially the
full rated value. The circuit also provides smooth anti-skip operation at
reduced speeds. This control circuit
is useful for adjusting and regulating the speed of small power tools
(e.g., drills, buffers, and jigsaws)
as required for special jobs.
The speed of the power-tool motor
is determined by the time during each
half-cycle of the ac input signal that
455
Circuits
12-33
UNIVERSAL MOTOR SPEED CONTROL
OR LAMP DIMMER (cont'd)
Circuit Description (cont'd)
the SCR conducts. This time, in
turn, is controlled by manual adjustment of potentiometer R 2 • When R.
is set for minimum resistance, the
rectifier current from the four
1N2860 rectifiers charges capacitor
C1 rapidly to the triggering potential of the two-transistor regenerative switch (preset to six volts for
this circuit), and the switch is triggered into conduction early in each
input half-cycle. When the 2N2614
and 2N3241 transistors used in the
switch circuit conduct, C1 discharges
through the series circuit of the
transistors and the gate electrode
of the SCR. This discharge current
triggers the SCR into conduction,
and load current then flows until the
end of the input half-cycle. This operation is repeated for each succeeding half-cycle of the ac input signal,
and the motor is maintained at maximum speed.
When the resistance of R. is increased, C1 charges more slowly and
the SCR is triggered later in the
input half-cycle, or not at all if the
charge on C1 fails to reach six volts.
Thus, the speed of the motor is reduced, or is cut off completely in the
maximum-resistance position.
The feedback circuit (Rl, R., Ro,
and C.) maintains essentially constant speed of the motor under
changing load conditions. As the load
is applied to the motor, the speed
momentarily decreases and the current through the motor and the SCR
increases. Resistor R 1 , in series with
the SCR, develops an increased voltage drop, and the charge on capacitor C. is increased. This increased
charge produces a current increase
through resistor Ro; less current is
then required through resistor R. and
the regenerative transistor switch.
As a result, the SCR is triggered
earlier in the next half-cycle of the
input ac voltage. The increased conduction time results in a corresponding increase in motor speed
approaching that set by means of
the potentiometer R.. Resistor R.
performs an additional function of
this circuit, i.e., it shunts out commutator "hash" and thereby eliminates the possibility of premature
triggering of the SCR.
The circuit can also be used to
provide continuous and smooth control of the brightness of incandescent lamps. Lamps having a total
power rating of 240 watts (with the
2N3228 SCR) or of 1500 watts (with
the 2N3669 SCR) can be adjusted
from complete cutoff to essentially
full rated brightness. As a lamp
dimmer, the circuit is useful for providing the exact amount of light required at different times in various
locations, i.e., the desired level for
any mood or occasion.
When the circuit is used as a lamp
dimmer, speed regulation is not required, and capacitor C2 and resistors R. and R. in the feedback
network may be omitted. Lamp
brightness is controlled in essentially the same way that the speed
of a universal motor is controlled.
The brightness of the incandescent
lamp load is determined by the time
during each half-cycle of the ac input that the SCR conducts. This
time, in turn, is' controlled by manual adjustment of potentiometer R 2•
RCA Transistor Manual
456
12-34
MODEL TRAIN AND RACE-CAR' SPEED CONTROL
TYPE
IN3754
INCREASE SPEED
R5
cw
R3
TYPE
2N3228
R4
TYPES
IN2860
+
R8
Rg
Parts List
==
=
=
=
C.
1 p,F, paper, 200 V
C.
1000 pF, electrolytic,
25 V
F.
fuse, 1-ampere, 3 AG
I. = neon lamp, NE-83 or
NE-2
R.
47000 ohms, 0.5 watt
R.
15 ohms, 60 watts (use
three 5-ohm, 20-watt resistors)
R.
potentiometer, speed
adjustment, 1000 ohms, 2
watts, linear taper
R.
15 ohms, 0.5 watt
R., R. = 100 ohms, 0.5 watt
Ro
470 ohms, 0.5 watt
=
=
=
Circuit Description
This circuit can be used to provide continuous and smooth control
of the speed of model vehicles which
are designed to operate at dc voltages up to 12 volts. The speed of
such vehicles can be adusted over the
complete range from zero to the full
rated value. This control circuit is
useful for starting, stopping, and
adusting the speed of most model
R. = 150 ohms, 0.5 watt
R.
1000 ohms, 0.5 watt
5, = toggle switch, singlepole, single-throw, 3-ampere, 125 volt
T1
power transformer,
5tancor No. RT-202 or
equiv.
=
=
railroad trains, race cars, and similar "hobby type" vehicles.
The operating speed of the model
railroad train or race car is determined by the delay involved in
triggering the 2N3228 SeR into conduction after the start of each halfcycle of ac input voltage. This delay
time, in turn, is controlled by adustment of the _ potentiometer R.. Be-
Circuits
457
12-34 MODEL TRAIN AND RACE-CAR SPEED CONTROL (con,t'd)
Circuit Description (cont'd)
cause the load and the SCR are in
parallel (rather than in series as in
the Universal Motor Speed Control,
Circuit 12-33), output voltage is
available at the load only when the
SCR is not conducting. When R. is
set for maximum resistance (maximum clockwise position), maximum
delay in triggering the SCR is obtained, and maximum speed is attained in the model vehicle.
When switch S, is closed, the pulsating direct current from the
1N2860 bridge rectifiers charges. capacitor C, through the resistor R2
and the 1N3754 silicon diode, and a
voltage appears across the output
terminals. Under conditions of minimum conduction of the SCR (approximately 100 degrees of each
input half-cycle of voltage), a maximum voltage of approximately 13
volts is present at the output terminals. As the resistance of potentiometer R3 is decreased, the current
through R3, R., and R5 charges capacitor C, more quickly to the
triggering potential of the twotransistor regenerative switch. The
2N2614 and 2N3241 transistors in
the switch then supply the gate current to trigger the 2N3228 SCR into
conduction, and the voltage across
the output terminals drops to slightly
less than one volt when potentiometer R. is set for minimum
resistance.
The output voltage is filtered by
capacitor C, and therefore approaches a steady dc level determined by the relative duration
of the "on" and "off" periods of the
SCR. The 1N3754 diode isolates the
anode of the SCR from the potential
on capacitor C, so that the SCR,
when it is triggered into conduction,
does not provide a discharge path
for the capacitor and so that the
anode voltage falls to zero and turns
off the SCR at the end of each input
half-cycle. Resistor R9 helps to stabilize operation of the SCR and also
provides a parallel path for discharge of C, after the SCR is triggered into conduction. Resistor R2
limits the current through the bridge
rectifier circuit to the maximum allowable value of 2 amperes in the
event of a short circuit across the
output terminals.
The parallel arrangement of the
load and the SCR in this circuit provides superior control and speed
regulation at the operating voltages
of model vehicles. The circuit is inherently self-regulating, i.e., it maintains essentially constant speed
under varying load conditions. When
the mechanical load increases (e.g.,
when the vehicle travels on an inclined portion of track), the vehicle
motor tends to slow down. The motor
current then increases, and the voltage acrOl>1:\ the capacitor C2 decreal>el>. However, because this
voltage is all>o the potential for the
timing circuit (R., R., R5, and Cl),
the capacitor C1 charges more slowly
and the delay in triggering the SCR
is increased. As a result, the output
voltage is also increased and the
speed is maintained essentially
constant.
RCA Transistor Manual
458
12-35
ELECTRONIC TIMER
INCREASE TlMERS
Parts List
C, = 50 p,F. electrolytic.
15 V
C% = 50 p,F. electrolytic.
150 V
Fl = :fuse. 3-ampere. 3 AG
It= neon lamP. NE-83
= 3000 ohms. 5 watts
R. = 33 ohms. 0.5 watt
R. = potentiometer. 1 megohm. 2 watts. linear taper
R. = 470 ohms. 0.5 watt
R1
Circuit Description
This circuit can be used to control the time interval between the
appUcation and interruption of power
to ac/ dc devices which do not use
the frame as a ground and which
have total power ratings up to 240
watts (nameplate current ratings
up to two amperes). The interval
between turn-on and turn-off can be
adjusted from five seconds to approcx:imately two minutes. The timer
is useful for providing controlled
"ON" times for such equipment as
photo-enlargers, developers, small
heaters, incandescent lamps, and
universal motors.
The "ON" time of the equipment
with which this circuit is used is
determined by the length of time
required for the timing capacitor
C. to charge to the value required
to turn on the NE-83 neon lamp and
trigger the two-transistor switch.
Rs = 150 ohms. 0.5 watt
R. = 47000 ohms. 0.5 watt
Rr = 10000 ohms. 0.5 watt
S, = toggle switch. doublepole. double-throw
This time,., in turn, is controlled by
adjustment" of potentiometer R •.
When ON~QFF switch 81 is turned
to the ON 'position, the full-wave
rectified current from the IN2860
silicon rectifiers charges capacitor
C, through resistor R,. When the
charge on C, increases to a sufficient value, current flows through
the IN3754 diode and triggers the
2N3228 8CR into conduction to complete the load circuit.
At the same time, capacitor C.
charges, at a rate determined by its
capacitance and the resistance of the
series combination of R. and Ro, to
about 80 volts. At this point, the
NE-83 neon lamp fires, and the current through the lamp activates the
two-transistor regenerative switch.
The 2N2614 and 2N3241 transistors
used in this switch quickly saturate
and provide a low-impedance dis-
459
Circuits
12-35
ELECTRONIC TIMER (cont'd)
Circuit Description (cont'd)
charge path for capacitor C,. The
capacitor discharges through resistor R. and the two transistors to
approximately one volt (the drop
across the transistors). Current then
ceases to flow in the gate circuit
of the SCR, and it is not triggered
on the next half-cycle of input ac
voltage. As a result, the load circuit
is not completed and no power is
12-36
delivered to the load until the circuit is reset. The lN3754 diode increases the threshold voltage of the
SCR gate circuit from 0.6 volt (the
drop across the gate-cathode junction of the SCR) to 1.2 volts. In this
way, the diode prevents accidental
triggering of the SCR and improves
the stability of the circuit.
ELECTRONIC HEAT CONTROL WITH READY LIGHT
Turns Off with Increase in Heat
FIRST
TRANSISTOR
SWITCH
SECOND
TRANSISTOR
SWITCH
THI
Parts List
= incandescent lamp, 6watt, 117-volt
Rl = 10000 ohms, 2 watts
Ro, He
150 ohms, 0.5 watt
R .. R7
470 ohms, 0.5 watt
R.
4300 ohms, 0.5 watt
&
sensltlvity control, po-
~1
=
=
=
=
tentiometer, 2500 ohms,
linear taper
transfonner (primary
not used), tapped secondary used as autotransfonner to provide step-up
in voltage, Stancor No.
T,
=
P-6465 or equlv.
thennistor; negative
temperature coefticient;
resistance (cold) , 5500
ohm s ; Keystone No.
RL25Jl or equiv.
THl
=
460
RCA Transistor Manual
J2-36 ELECTRONIC HEAT CONTROL WITH READY LIGHT (cont'd)
Circuit Description
This circuit can be used to regulate the temperature of electric frypans, electric coffee makers, electric
waffle irons, and similar types of
electric appliances having a maximum power rating of 240 watts. Two
2N3228 ~PR's are used in the circuit
to provide full-wave power control.
The temperature at which the circuit
interrupts power to the appliance
heater is determined by the setting
of the sensitivity-control potentiometer, R.. The thermistor TH1 is
the sensing element used to initiate
the control function. The lamp 11
lights when the desired operating
temperature is reached to indicate
that the appliance is ready for use.
When the 117-volt ac power is
initially applied to the circuit, the
resistance of the cold thermistor is
high enough so that the current
through resistor R1 is insufficient to
trigger the first two-transistor regenerative switch. Potentiometer,
R., however, is adjusted so that the
current through resistor R7 will be
large enough to trigger the 2N2614
and 2N3241 transistors in the second regenerative switch into conduction. The regenerative action of
the switch circuit quickly drives
these transistors into saturation.
The saturated switch current flows
through the gate electrode of SCR.
and triggers it into conduction.
Once the SCR starts to conduct,
the gate electrode loses its control,
and the flow of current continues
for almost the full 180 degrees of
the input half-cycle for which the
anode of SCR. is positive with respect to its cathode. During this
period, current flows through the
primary of transformer T1 and
through the appliance heater. The
1N1199A diode restricts the voltage
drop across the primary of T1 to
about 0.3 volts. When SCR. is con-
ducting, the voltage drop across it
is about 0.5 volt. The ready lamp 11
is connected in parallel with the
transformer primary and the SCR.
The total voltage drop of 0.8 volt is
not enough to light tpe lamp.
During the input half-cycle that
SCR. does not conduct, the flux
about the step-up transformer T1 collapses and induces sufficient voltage
across the secondary winding to cause
current to flow through the 1N3754
diode to the gate electrode of SCR1.
This SCR is now triggered into conduction and supplies the current to
the appliance heater. In this way,
full-wave power control is provided.
The flow of current through the
appliance causes the ambient temperature to rise. The thermistor
TH1 has a negative temperature coefficient, and its resistance decreases.
When the temperature of the appliance heater reaches the desired
level, the resistance of the thermistor is reduced to a value less than
the combined resistance of R. and
R5. The current through R, is then
sufficient to trigger the 2N2614 and
2N3241 transistors in the first regenerative switch. These transistors
are quickly driven into saturation,
and the voltage across the switch
decreases to about 1 volt. The bias
resistors (R., R., and R.) for the
second two-transistor regenerative
switch are in parallel with the first
switch, and the 1 volt that appears
across these resistors is not high
enough to maintain the conduction
of the second switch. No gate current then flows to trigger SCR.
into conduction on the next halfcycle of the input ac power. When
SCR. is not conducting, the current
supplied to ready lamp 11, through
the first transistor switch, resistor
R., and the IN3754 diode, is sufficient to light the lamp.
Circuits
12-37
461
INTEGRAL-CYCLE RATIO POWER CONTROL
For Electric Appliances
Circuit Description
This circuit can be used as a heat
control for electric hot plates, and in
other applications in which control
of the average power level is desired.
The average level of the power delivered to an electric appliance is controlled, without the use of a thermistor sensing element, by allowing
current to flow in the load circuit for
only controlled periods. The current
delivered to the load circuit is gated
on and off by a free-running (approximately 1 cis) multivibrator; the
ratio of on time to off time during
each cycle determines the average
amount of ac power applied. Two
SCR's are used to deliver the load
current so that full-wave power
control can be obtained. Depending
upon the maximum power rating of
the appliance, either 2N3228 (up to
800 watts) or 2N3669 (up to 2000
watts) SCR's are used.
The 117-volt ac power applied to
the circuit is rectified by the IN3756
diode CR•. The dc voltage developed
across C. by the rectified current
from CR. is the dc supply voltage
for the 2N2614 transistors, Q2 and
Q., in the free-running multivibrator. The rectangular-wave output
from the multivibrator is applied to
the base of the 2N2614 p-n-p transistor Q,. The multivibrator output
gates the operation of Q,. During
the positive half-cycle, the transistor is held cut off; during the negative half-cycle, the transistor is
driven into saturation. The setting
of potentiometer R. determines the
relative durations of the positive
and negative half-cycles of the multivibrator output and, in this way,
establishes the power on-time-to-offtime ratio.
During the negative half-cycle of
the input ac power, current is allowed to flow through the IN3756
diode CR.. If Q, is gated on by the
multivibrator during this period,
most of the current from the diode
is shunted through this transistor
and the IN3754 diode CR. in series
with it, and very little current is allowed to flow through T 2 • As a result,
the amount of energy stored in T. is
negligible, and when the polarity of
the ac input reverses so that no current flows through CR., the collapsing field about this winding does not
supply sufficient current to the gate
electrode of SCR 2 to trigger the
SCR into conduction. For this condition, no current is delivered to the
load circuit.
If Q, is not gated on during the
negative half-cycle of the ac input,
all the current from CR. flows
through T2, and a strong magnetic
field is set up around this winding.
When the polarity of the ac input
reverses, the collapsing field about
T2 causes sufficient current to flow
through the IN3754 diode CR. to
the gate electrode of SCR2 to trigger this SCR into conduction. Current then flows through the primary
of autotransformer Tt and the load
circuit. The IN1199A diode CR.
limits the voltage drop across the
primary of T, to about 0.3 volt.
When the polarity of the ac input
again reverses so that SCR. no
longer conducts, the collapsing field
about TI supplies sufficient gate
current to SCRt through the IN3754
diode CRI so that this SCR is triggered into conduction. The load current is then delivered through SCRI.
462
RCA Transistor Manual
12-37
INTEGRAL-CYCLE RATIO POWER CONTROL (cont'd)
CR6
TYPE
IN3756
R5
FREE-RUNNING
MULTI VIBRATOR
+
117 V
AC
Re
POWER
RATIO
CONTROL
* Maximum
8CR Is used.
load is 800 watts when 2N3228 8CR is used or 2000 watts when 2N3669
Parts List
=
C1, C.
15 p,F, electrolytic,
50 V
C3 = 500 p,F, electrolytic,
15 V
R1 = 3000 ohms. 5 watts
Ro. R. 1000 ohms. 0.5 watt
R. = 180 ohms, 0.5 watt
R., R. 6800 ohms, 0.5 watt
=
=
12-38
=
R.
2000 ohms, 5 watts
R. = power-ratio control.
potentiometer, 0.1 megohm. linear taper
81
ON-OFF switch, single-pole. single-throw
T1 = transformer (primary
not used); tapped sec-
=
ondary used as autotransformer to provide 1-to-S
step-up in voltage; Stancor No. P-6465 or equiv.
To
transformer (secondary not used); Stancor
No. P-6465 or equiv.
=
SERVO AMPLIFIER
Output, 6 W
Circuit Description
This servo amplifier can supply up
to 6 watts of power to the drive
motor of a servo system. The amplifier is driven by a 400-c/ s ac signal
and is operated from a dc supply
voltage of 56 volts. A pair of 2N3054
silicon power transistors are used
in a class AB, push-pull, singleended output stage to develop the
required output power. This output
stage is very similar to the one used
in the High-Quality 10-Watt Audio
Power Amplifier, circuit 12-11.
A 2N1481 common-emitter input
stage amplifies the 400-c/ s input to
the level required to drive the
2N3054 output transistors. The amplified 400-c/s signal at thecollector of the 2N1481 transistor is
coupled to the base of each 2N3054
output transistor by the transformer
T1. The secondary of T1 is split to
Circuits
463
SERVO AMPLIFIER (cont'd)
12-38
+56V
RI
C4
r-
.~
TYPE
2N3054
CI
INPUT
400 cIs
OUTPUT
TO
CONTROL
PHASE
OF
MOTOR
R2
+ C2
Rg
Parts List
=
=
=
CI
10
15 V
C.
47
15 V
C.
20
50 V
C. = 500
50 V
/LF, electrolytic,
/LF, electrolytic,
/LF,
electrolytic,
/LF, electrolytic,
RI = 68000 ohms, 0.5 watt
fu = 5600 ohms, 0.5 watt
R.
56 ohms, 0.5 watt
R. = 560 ohms, 0.5 watt
R. = 3300 ohms, 0.5 watt
R.., R7 18000 ohms, 0.5 watt
Rs, R. = 400 ohms, 0.5 watt
RIO Rll = 4 ohms, 1 watt
=
=
T= driver transformer; core
material 0.014-inch Magnetic Metals Corp. "Cr,ystalligned"
or
eqUlv.;
primary 1500 turns; secondary 450 turns, bifilar
wound (each section 225
turns)
Circuit Description (cont'd)
form two identical windings which
are oriented so that the inputs to
the output transistors are equal in
amplitude and 180 degrees out of
phase, as required for push-pull
drive.
If the input to the upper output
transistor were applied between the
base and ground, this transistor
would be operated as an emitter
follower and could not provide voltage gain. The input, however, is applied between the base and the
emitter so that, in effect, the upper
transistor is operated as a common-
emitter amplifier except that there
is no phase reversal between input
and output. Its gain, therefore, is
equal to that of the lower output
transistor, which is operated in a
conventional common-emitter amplifier configuration. The positive
half-cycle of the output signal developed by the upper transistor and
the negative half-cycle developed by
the lower transistor then have equal
voltage swings. This output is
coupled to the control-phase winding of the drive motor by the series
output capacitor C•.
464
RCA Transistor Manual
SHIFT REGISTER OR RING COUNTER
12-39
SWITCHING
TRANSISTOR
TRIG
REGISTER
REGISTER
REGISTER
No.1
No.2
No. N
OUTPUT A
OUTPUT B
C2
A
OUTPUT N
Parts List
C, = 100p,F, electrolytic, 6 V
No. 49; 2-volt, 60-mA (or
330 ohms, 0.5 watt)
No. 1488; l4-volt, lSO-mA)
Rs, Rs, RN
2200 ohms,
C•• C., C", CN
0.05 p,F (or
0.1 pF), ceramic, 50 V
0.5 watt (or 680 ohms,
Rl
1000 ohms, 0.5 watt
(or 680 ohms, 1 watt)
0.5 watt)
C.
1 JLF, (or 25 p,F), electrolytic, 25 V
R., R., RN'
560 ohms, 0.5
Rs
27 ohms, 0.5 watt (or
watt (or 180 ohms, 1 watt)
12 ohms, 1 watt)
CR" CR., CRN
crystal
R7, RiO, RN" = 150 ohms. 1
diode 1N34A or equiv.
R.
1000 ohms, 0.5 watt
watt (or 82 ohms, 2 watts)
I!, 12, IN
indicator lamp
R. 1000 ohms, 0.5 watt (or
The circuit as shown is designed for an
NOTES:
output-current level of 40 mA (Ei = 12
The shift register may use as many stages
V; Eo
as desired and may be made regenerative
9 V). Transistor types and comby connecting points A and A'. In addiponent values shown in parentheses indicate the changes necessary for operation
tion, the basic circuit can be adapted for
operation at many different output-current
at an output-current level of 3 amperes
levels.
(Ei
27 V; Eo
24 V).
=
=
=
=
=
=
=
=
=
=
=
=
=
Circuit Description
In this basic shift register, the
successive outputs from the various
stages are delayed (or shifted) from
those of the preceding stages by a
controlled time interval (i.e., the
duration between input trigger
pulses). These outputs are coupled
through OR gates (not shown on
circuit schematic) and may be used
to program the timing sequence for
various digital switching operations.
If point A' on the circuit is connected to point A, the register becomes regenerative and may be used
as a ring counter.
The dc supply voltages Ei and Eo
are obtained from separate taps on
a resistive voltage divider. With
these voltages applied, the 2N1302
switching transistor is immediately
triggered into conduction by the
positive voltage applied to its base
Circuits
12-39
465
SHIFT REGISTER
OR RING COUNTER (cont'd)
Circuit Description (cont'd)
through R.. One of the register
stages must be triggered simultaneously to provide a complete path
for the current through the switching transistor.
Each register stage is basically a
two-transistor regenerative switch
that employs an n-p-n triggering
transistor and a p-n-p output transistor. For the E1 and E. voltages
used (see notes below circuit schematic), the n-p-n transistor is a
2N1302, and the p-n-p transistor is
a 2N404 or a 2N2869/2N301 depending upon the level of output current
desired. If either of the transistors
in a register stage starts to conduct,
both of them are quickly driven into
saturation by the regenerative action of the stage. The relatively high
current from the p-n-p transistor in
the stage flows through the resistance that exists between the E1 and
E. taps on the power-supply voltage
'divider. The increased voltage drop
across this resistance reduces the
E. voltage to a value less than that
required to trigger the other register stages, and these stages are held
inoperative.
When power is initially applied to
the circuit, C. and R. assure that the
first register stage is triggered into
conduction before current flows
through any of the other register
stages. When the power is first applied, the initial surge of current
through C. and R. immediately triggers the 2N1302 transistor in the
first stage into conduction. This
transistor and the p-n-p output transistor are then quickly driven into
saturation by the regenerative action of the stage. No other register
stage is then allowed to conduct, and
the lamp, 1, in the collector of the
p-n-p transistor in the first stage
lights to indicate that the output is
being supplied by this stage. This
condition is maintained until an in-
put trigger pulse is applied. During
this period, C. charges through
diode CR" the 2N1302 transistor, and
resistors R. and R. to the E1 voltage
less the sum of the voltages dropped
across the other components in the
charging path.
A negative trigger pulse is applied to the base of the 2N1302
switching transistor to initiate a
register shift. A sufficiently large
negative pulse will drive the switching transistor to cut off. All the register stages are then held inoperative for the duration of the trigger
pulse. When the trigger pulse is removed, the switching transistor
again conducts through one of the
register stages. This time, however,
no quick surge of current can flow
through C. and R. to trigger the
first register stage, because C. has
fully charged' to the E1 voltage.
Moreover, the charge on C. tends to
reverse-bias diode CR1, and thus impedes the flow of current through
the first register stage. The charge
on C" however, is series-aiding with
the dc supply voltage in the second
register stage. This series-aiding effect causes the second stage to be
triggered into conduction before current can flow through any of the
other stages. The biasing action of
this stage then holds the other stages
inoperative. The lamp I. then lights
to indicate that the output is being
supplied by the second stage.
When the next register shift is
initiated by a negative trigger pulse,
the charge on C. assures that the
third register stage will be triggered
to supply the output. In this way, the
operation of the register is shifted
from one stage to the next each time
a negative trigger pulse is applied.
The register can be reset so that the
operation starts with the first stage
at any time by discharging capacitor C•.
466
RCA Transistor Manual
72-40
AC VOLTMETER
INPUT
r
R,
C2
TYPE
3N99
RIO
TYPE
3N99
+22.5
R7
v
RII
TYPE
3N99
TYPE
3N99
0
CI
+
Re
Ce
-
RI6
\
TYPE
IN34
PUSH-TO-READ SWITCH
Parts List
c, =
0.01 JLF, paper, 600 V.
25 J1.F, ceramic disc,
25 V.
C., C5, C7 = 0.33 JLF
C., Co
100 JLF, electrolytic,
6 V.
Cs 50 JLF, electrolytic, 25 V.
M:t
dc miIIiameter
R1
1000 oluns, 0.5 watt
Ra
10 megohms, 0.5 watt
Ro = 100 oluns, 0.5 watt
C2
=
=
=
==
=
R., Rs, R13 = 10000 ohms,
0.5 watt
R.
47000 ohms, 0.5 watt
Ro, R9, RH
0.39 megohm,
0.5 watt
R7, Rn = 33000 ohms, 0.5
watt
R10 = 5000 ohms, 0.5 watt
R1.
gain-control potentiometer, 1000 ohms, 0.5
watt, linear
=
=
=
Circuit Description
This circuit illustrates the application of RCA-3N99 MOS transistors in an ac voltmeter. The circuit
has an input impedance of 1 megohm, a full-scale sensitivity of 10
millivolts on the lowest range, a
flat frequency response over the
audio range of 20 to 20,000 cis, and
a low current drain which permits
fully portable operation. The amplifier portion of the voltmeter circuit
consists of four 3N99 stages. The
first stage is operated as a sourcefollower and presents a very low
input capacitance to the conventional one-megohm input-signal voltage divider. With this stage operating at a drain current of only 230
microamperes and a drain-to-source
voltage of 0.5 volts, the effective in-
Rl. = 2000 ohms, 0.5 watt
R16, R17, R18
5100 oluns,
0.5 watt
RIO = zero-adjustment potentiometer, 10000 ohms,
0.5 watt, linear taper
SI = push-to-read switch;
single-pole, single-throw;
Microswitch No. BZ2RQ1
or equiv.
=
put capacitance is only 0.5 picofarad. The source of the first stage
is coupled to the insulated gate of
the second stage by a 0.33-microfarad ceramic capacitor.
The second stage is operated as
a common-source amplifier. As in
the first stage, the 10,OOO-ohm source
resistor establishes a quiescent drain
current of approximately 230 microamperes. The source resistor is bypassed with a 100-microfarad capacitor. This stage provides a voltage
gain of between 16 and 20.
The third stage is similar to the
second stage except that an unbypassed lOOO-ohm potentiometer is
added in series with the bypassed
10,OOO-ohm source resistance. This
potentiometer can be used to vary
Circuits
12-40
467
AC VOLTMETER CIRCUIT (cont'd)
Circuit Description (cont'd)
the voltage gain of the stage between 10 and 20 by varying the
amount of negative feedback voltage. With a 10-millivolt signal at
the input of the first stage, the
maximum output-signal voltage at
the drain of the third stage is about
2.8 volts rms.
The fourth stage is operated as a
source-follower and ·provides the
necessary impedance transformation between the high output impedance
(approximately
300,000
ohms) of the third stage and the
low impedance of the meter rectifier
circuit.
The meter rectifier uses two 1N34
diodes in a conventional meter-circuit
bridge configuration. A third 1N34
diode is used in conjunction with a
10,000-ohm potentiometer to compensate for the nonlinear rectification
characteristic of the rectifier diodes
at the low end of the meter scale.
A 100-to-1 voltage divider is
placed ahead of the input-coupling
capacitor of the first stage to protect the gate of the 3N99 in this
stage from overload in the event
that an excessively large signal is
accidentally applied to the input
terminals when the range switch is
in the 10-millivolt position. A "pushto-read" switch removes this 100-to1 attenuation network from the
circuit.
The total consumption from the
battery for the complete meter amplifier is only 2.5 milliamperes.
ASTABLE MULTIVIBRATOR
(Frequency
7000 c/ s)
12-41
=
12V~--~--------~-----4r---------,
f
=
1
(0.7C1R.) (0.7C.R.)
Cl, C. = 0.1 p.F, paper, 25 V
Rl R. = 60 otuns, 5 watts
R. R. = 1000 otuns, 0.5 watt
RCA Transistor Manual
468
12-41
ASTABLE MULTIVIBRATOR (cont'd)
Circuit Description
This astable (free-running) multivibrator develops a square-wave output that has a peak value equal to
the dc supply voltage (Vee
12
volts) and a minimum value equal
to the collector saturation voltage of
the transistors. The circuit is basically a two-stage nonsinusoidal oscillator in which one stage conducts
at saturation while the other is cut
off until a point is reached at which
the stages reverse their conditions.
The circuit employs two 2N1481
transistors operated in identical
common-emitter amplifier stages
with regenerative feedback resistance-capacitance coupled from the
collector of each transistor to the
base of the other transistor.
When power is initially applied to
the circuit, the same amount of current tends to flow through each transistor. It is unlikely, however, that
a perfect balance will be maintained,
and if the current through transistor Q" for example, should increase
slightly without an attendant increase in that through transistor
Q., the multivibrator will oscillate
to generate a square-wave output.
As the current through transistor
Q, increases, the resultant decrease
in collector voltage is immediately
coupled to the base of transistor Q.
by the discharge of capacitor C,
through resistor R.. This negative
voltage at the base reduces the current through transistor Q., and its
collector voltage rises. The charge
of capacitor C. through resistor R.
couples the increase in voltage at
the collector of transistor Q. to the
base of transistor Q" and further
increases the flow of current through
Q,. The collector voltage of Q, de-
=
creases even more, and the base of
Q. is driven more negative. As a result of this regenerative action,
transistor Q, is driven to saturation
almost instantaneously, and, just as
quickly, transistor Q. is cut off. This
condition is maintained as long as
the discharge current of C, develops
sufficient voltage across R. to hold
Q. cut off. The time constant of C,
and R., therefore, determines the
time that Q. remains cut off (i.e.,
the duration of the positive halfcycle of the square-wave output).
During this period, the voltage at
the output terminal is the dc supply voltage (12 volts).
The discharge current from C,
decreases exponentially, as determined by the time constant of
the discharge path, and eventually
becomes so small that the voltage
developed across R. is insufficient to
hold Q. cut off. The decrease in collector voltage that results when Q.>
conducts is coupled by C. and R.
to the base of Q,. The current
through Q, then decreases, and the
collector voltage of this transistor
rises. The positive swing of the voltage at the collector of Q, is coupled
by C, and R. to the base of Q. to
increase further the conduction of
Q.. The regenerative action of the
multivibrator then quickly drives Q.
to saturation and Q, to cutoff. The
length of time that this condition
is maintained is determined by the
time constant of C. and R.. During
this period, which represents the
negative half-cycle of the squarewave output, the voltage at the output terminal is the collector saturation potential of Q•.
469
Circuits
BISTABLE MULTIVIBRATOR
l-Mc/ s IIFlip-Flopli
12-42
+6V
-18V
+6V
~------~----~~~~-o-6V
TYPE
INI26
"O"OUTPlH
TYPE
INI26
INPUT
=
Parts List
c,. C. = 180 pF. mica. 24 V
C" C. = 430 pF. mica. 24 V
Ri Ra = 5100 ohms. 0.5 watt
R. R. = 1200 ohms. 0.5 watt
Ra R. = 11000 ohms. 0.5 watt
R. & = 2700 ohms. 0.5 watt
Circuit Description
The bistable multivibrator is
ideally suited for generating the
binary ("1" and "0") type of outputs required in computer applications and also finds widespread use
as an electronic switch. The circuit
is in a stable state when either transistor is conducting and the other
transistor is cut off. The states of
the transistors are switched by the
application of a properly applied
trigger pulse. The 1N126 steering
diodes, CRa and CR., assure that the
2N404 p-n-p transistors in the circuit are triggered to alternate states
only when positive pulses are applied to the input terminal.
A positive trigger pulse applied
to the input terminal when transistor Qi is conducting and Q2 is cut
off causes Ql to conduct less, and the
collector voltage of this transistor
increases to a more negative value.
The increase in negative voltage at
the collector of Ql is coupled to the
base of Q2. If this voltage is large
enough to overcome the cutoff bias
on Q2, as determined by the amplitude of the trigger pulse, Q2 conducts. The collector voltage of Q.
then decreases to a less negative
value. This positive-going voltage is
coupled to the base of Ql to decrease
further the conduction of this transistor. The regenerative action continues until Q2 is driven to saturation and Ql is cut off. This condition
is maintained until another positive
trigger pulse is applied to switch
the multivibrator from this stable
state.
The output of the multivibrator,
which may be taken between collector and groand of either transistor
(or both) is a unit step voltage when
one trigger is applied. A squarewave output is obtained by a continuous periodic pulsing of the input.
A frequency division from input to
output of 2 to 1 is thus obtained.
RCA Transistor Manual
470
LIGHT FlASHER
60 Flashes per Minute
12-43
MULTIVIBRATOR
LAMP AMPLIFIER
5
LAMP~
TYPE
2N441
_
-=-12V
+ -
Parts List
=
C~
25 p.F, electrolytic, 12 V
C. = 100 p.F, electrolytic
12 V
LAMP
bulb. 12 V
1 ampere
R1 R.
2000 ohms, 0.5 watt
=
=
=
R. R.
100000 ohms,
0.5 watt
& = 120 ohms, 0.5 watt
S
ON-OFF switch; single-pole, single-throw
NOTE: C, and C. may be
=
Circuit Description
In this light-flasher circuit, a freerunning multivibrator is used to gate
the operation of a two-stage amplifier. An incandescent lamp is used
as the collector load in the second
amplifier stage, and each time the
stage conducts, the lamp lights. The
dc power for the circuit is supplied
by a 12-volt B battery.
The multivibrator uses a pair of
2N217 transistors; the square-wave
output developed at the collector of
the second transistor is directly
coupled to the base of a 2N270 transistor operated in a common-emitter
amplifier stage.
The 2N270 transistor stage is
gated on and off by the square-wave
signal from the multivibrator. This
stage, in turn, gates the operation
varied to change flashing
rate. Bulbs and other resistive loads handling currents
up to one ampere may be
used, . but inductive loads
should not be used.
of the 2N441 common-emitter amplifier stage in which the lamp is used
as the collector load. Each time the
2N441 transistor is gated on, the
lamp lights. The lamp, therefore,
flashes at the frequency of the multivibrator. With the equation given
for the astable multivibrator, circuit
12-41, the natural (unloaded) frequency of the multivibrator in the
lamp dimmer is calculated to be between 6 and 7 cycles per minute.
The loading effect of the low-impedance lamp circuit, however, reduces
substantially the switching time constant of the multivibrator so that its
frequency is increased by approximately a factor of 10. The lamp,
therefore, flashes at a frequency of
approximately 60 cycles per minute.
471
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472
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473
Index to
RCA Semiconductor Devices
IN248C
IN249C
IN250C
IN440B
IN441B
...........
...........
...........
...........
...........
372
372
372
372
372
IN1616 ...........
IN1763A .........
IN1764A .........
IN2326 ...........
IN2858A .........
373
373
373
378
373
2NI05
2NI09
2N139
2N140
2N173
............ 333
............. 120
............ 121
............ 122
............ 122
IN442B ...........
IN443B ...........
IN444B ...........
IN445B ...........
IN536 ............
372
372
372
372
372
IN2859A
IN2860A
IN2861A
IN2862A
IN2863A
373
373
373
373
373
2N174
2N175
2N176
2N206
2N215
123
125
125
333
126
IN537
IN538
IN539
IN540
IN547
372
372
372
372
372
IN2864A ........ .
IN3128 .......... .
IN3129 .......... .
IN3130 .......... .
IN3193 .......... .
373
378
378
378
373
2N217
2N218
2N219
2N220
2N247
INI095 .......... .
IN1l83A ........ .
IN1l84A ........ .
IN1l86A ........ .
IN1l87A ........ .
372
372
372
372
372
IN3194
IN3195
IN3196
IN3253
IN3254
.......... .
.......... .
.......... .
.......... .
.......... .
373
373
373
373
373
2N269
2N270
2N274
2N277
2N278
333
126
127
129
129
IN1l88A
IN1l89A
IN1l90A
IN1l95A
IN1l96A
372
372
372
372
372
IN3255
IN3256
IN3563
IN3754
IN3755
373
373
373
373
373
2N301 ........... .
2N301A ......... .
2N307 ........... .
2N331 ........... .
2N351 ........... .
333
333
333
333
130
IN1l97A
INllSl8A
IN1l99A
IN1200A
IN1202A
372
372
372
372
372
IN3756
IN3847
IN3848
IN3849
IN3850
373
378
378
378
378
2N356
2N357
2N358
2N370
2N371
333
333
333
130
131
............
............
............
............
............
........... .
........... .
........... .
........... .
........... .
126
126
126
126
333
131
333
333
131
132
IN1203A
IN1204A
IN1205A
IN1206A
IN1341B
.........
.........
.........
.........
.. . . . . . . ..
373
373
373
373
373
IN3851
IN3852
IN3853
IN3854
IN3855
378
378
378
378
378
2N372
2N373
2N374
2N376
2N384
IN1342B
IN1344B
IN1345B
IN1346B
IN1347B
....... '"
...... ..'. ..
. . . . . . . . ..
....... . ..
..........
373
373
373
373
373
IN3856
IN3857
IN3858
IN3859
IN3860
378
378
378
378
378
2N388 ...........
2N388A .........
2N395 ...........
2N396 ...........
2N396A .........
.
.
.
.
.
133
133
133
134
134
IN1348B . . . . . . . . ..
IN1612 ...........
IN1613 ...........
IN1614 ...........
IN1615 •.•....•...
373
373
373
373
373
IN3861 ...........
IN3862 ...........
IN3863 ...........
IN4785 ...........
2NI04 ............
378
378
378
379
120
2N397 ............
2N398 ............
2N398A ..........
2N398B ..........
lN404 ............
134
135
135
135
135
RCA Transistor Manual
474
170
152
152
2N1358
2Nt384
2Nt395
2Nt396
2Nt397
2N9I7 ............
2N918 ............
2N955 ............
2N955A ..........
2N960 ............
153
154
333
333
333
2NI4t2
2N1425
2N1426
2N1450
2N1479
334
334
334
139
141
141
333
333
2N96I
2N962
2N963
2N964
2N965
333
334
334
334
334
2N1480
2N1481
2N1482
2N1483
2N1484
173
173
173
174
175
2N497
2N544
2N561
2N578
2N579
333
333
333
333
333
334
2N966
2N967 ........... . 334
155
2NIOIO
334
2NI014
155
2Nt023
2N1485
2N1486
2N1487
2N1488
2N1489
175
176
2N580
2N581
2N582
2N583
2N584
333
2NI066
2NI067
2NI068
2NI069
2NI070
156
334
2N1490
2Nt491
2N1492
2N1493
2N1511
178
178
2N585
2N586
2N59l
2N640
2N64l
143
144
2NI090
2NI091
2NI092
2NI099
2Nll00
156
157
334
157
2N1S!2
2N1513
2N1514
2N1524
2N1525
334
334
334
2N1169
2N1170
2Nl177
2N1178
2N1179
334
159
2Nt526 .......... .
2N1527 .......... .
2N1605 .......... .
2N1605A ........ .
2N1613 .......... .
182
2NI631
2Nt632
2Nt633
2Nt634
2Nt635
183
184
334
334
334
334
184
185
186
186
.
.
.
.
.
135
136
137
137
137
2N795
2N796
2N828
2N834
2N9I4
333
............
............
............
............
............
137
138
138
138
139
2N44l
2N442
2N443
2N456
2N457
2N404A .........
2N405 ...........
2N406 ...........
2N407 ...........
2N408 ...........
2N409
2N4l0
2N411
2N412
2N4l4
142
143
333
333
144
333
333
333
333
2N642
2N643
2N644
2N645
2N647
333
333
145
2N649
2N656
2N68l
2N682
2N683
145
333
376
376
376
334
334
334
158
334
159
160
2N1180 ......... .
2N1183 .......... .
2N1183A ........ .
2N1183B ........ .
2Nt184 ..........•
161
161
163
163
171
176
177
178
180
180
334
180
181
181
181
182
183
334
164
164
164
164
2Nl700
2N1701
2N1702
2NI708
2N1711
186
188
189
165
165
166
166
167
2NI768
2Nt769
2NI770
2NI77I
2NI772
334
149
2N1301
2N1302
2N1303
2N1304
2N1305
333
333
149
151
333
2N1306
2N1307
2N1308
2N1309
2N1319
167
167
168
168
334
2NI773
2NI774
2NI775
2NI776
2Nt777
376
376
376
............ 376
............. 376
............ 333
............ 146
........... , 147
376
333
147
147
148
.
.
.
.
.
161
171
334
2N689
2N690
2N696
2N697
2N699
376
2N1184A ........
2N1184B ........
2N1213 ..........
2N1214 ..........
2N1215 ..........
160
170
170
2N1216
2N1224
2N1225
2Nt226
2N1300
376
376
2N7l0 ............
2N711 ............
2N718A ..........
2N720A ..........
2N794 ............
333
168
169
2Nt636
2Nt637
2Nl638
2Nl639
2Nt683
376
2N684
2N685
2N686
2N687
2N688
2N705 .......... ..
2N706 ........... .
2N706A ......... .
2N708 ........... .
2N709 .......... ..
333
163
334
334
190
191
334
376
376
376
376
376
475
Index to RCA Semiconductor Devices
2~1778 ..........
2~1842A ........
2~1843A ........
2~1844A ........
2~1845A ........
.
.
.
.
.
2~1846A
2~1847A
2~1848A
376
376
376
376
376
2~3242
2~3261
2~3262
2~3263
2~3264
2~3265
2~3266
234
235
236
237
238
40084
40108
40109
40110
40111
.............
.... , ........
....... " ... ,
............ ,
.... , ........
272
373
373
373
373
40112
40113
40114
40115
40116
............ .
............ .
............ .
............ .
............ .
373
373
373
373
374
2~1849A
2~1850A
376
376
376
376
376
2~3439
239
240
240
241
242
2~1853
2~1854
2~1893
2~1905
2~1906
192
192
193
194
195
2~3440
2~3441
2~3442
2~3478
2~3512
243
243
244
245
246
40208
40209
40210
40211
40212
............
............
............
............
....... " ...
.
.
,
.
.
374
374
374
374
374
2~2015
2~2016
2~2102
2~2147
2~2148
196
197
198
199
201
2~3525
2~3528
2~3529
2~3553
2~3583
376
376
376
247
248
40213
40214
40216
40217
40218
............ .
.... , ....... .
............ .
............ .
............ .
374
374
376
273
273
2~2205
2~2273
2~2338
203
334
204
334
205
2~3584
2~3585
2~3600
2~3632
2~3668
249
250
250
252
376
40219
40220
40221
40222
40231
.............
.............
.............
.............
.............
274
274
274
274
274
2~2339 ...........
2~2369A .........
2~2405 ...........
2~2475 ...........
2~2476 ...........
334
206
207
209
210
2N3669
376
376
253
254
254
40232
40233
40234
40235
40236
.... , ........
.............
.............
.. ...........
....... ......
275
275
275
276
276
2~2477
2~2482
2~2613
2~2614
2~2631
211
334
212
213
214
255
256
257
258
259
40237
40238
40239
40240
40242
............ .
............ .
............ .
............ .
............ .
277
277
278
278
278
2~2708 ...........
2~2857 ...........
2~2869/2~301 ....
2~2870/2N301A ...
2~2873 ...........
214
216
217
218
334
2~3872
2~3873
2~3878
376
376
376
376
260
40243
40244
40245
40246
40250
.............
.. ...........
............ ,
.............
.............
280
280
281
282
282
2~2876
2~2895
2~2896
2~2897
2~2898
218
219
220
334
2~3879
2~3896
2~3897
2~3898
2~3899
261
376
376
376
376
40250V1 ......... .
40251 ............ .
40253 ............ .
40254 ............ .
40255 ............ .
283
283
284
286
286
2~2899
2~2900
2~2938
2~2953
2~3011
334
334
223
224
226
2~3932
2~3933
2~4012
2~4036
2~4037
262
262
263
264
265
40256
40259
40261
40262
40263
........ .....
.............
......... ....
.............
..... ........
286
373
286
287
288
226
2~2206
2~2270
2~3053
2~3054
2~3055
2~3118
2~3119
2~3228
2~3229
2~3230
2~3231
2~3241
222
2N3375
2N3435
2~3670
2~3730
2~3731
2~3732
2~3733
2~3771
2N3772
2~3773
2~3866
2~3870
2N3871
3~98
3~99
228
229
230
............
............
3746 ............
3907 /2~404 ......
40022 ............
.
.
.
.
.
266
267
334
334
267
40264
40265
40266
40267
40269
............
............
............
............
............
.
.
.
.
.
288
373
373
373
289
376
231
232
233
233
40050
40051
40080
40081
40082
....... ......
........ .....
.............
.............
.............
269
270
271
271
272
40279
40280
40281
40282
40283
.. ...........
............ ,
.............
.............
.............
290
291
291
292
293
227
RCA Transistor Manual
476
40290
40291
40292
40294
40295
.............
.............
.............
.............
. ............
40296
40305
40306
40307
40309
............. 295
............. 295
............. 296
............. 296
............. 297
40310
40311
40312
40313
40314
.. ...........
..... ........
.............
.............
.............
297
298
298
299
40315
40316
40317
40318
40319
.............
. " ..........
.... , ........
.............
..... " ......
300
301
301
302
303
40320
40321
40322
40323
40324
.............
. ............
.............
.............
.............
304
304
305
305
306
40325
40326
40327
40328
40329
...... .......
. " ..........
.............
.............
..... ........
306
307
307
308
308
40340 ...... .......
40341 ......... ....
40346 .............
40347 .............
40347V1 ..........
309
310
311
312
313
40347V2 ..........
40348 . .. .. . . .. ...
40348V1 ..........
40348V2 ..........
40349 .............
313
313
314
314
315
40349V1 ..........
40349V2 ..........
40350 .............
40351 .............
40352 .... , ........
316
316
316
317
317
293
293
294
294
294
300
40354 ............. 318
40355 ............. 318
40360 ............. 318
40361 ............. 319
40362 ............. 319
40363
40364
40366
40367
40368
.............
.............
.............
.............
. . . . . . . . . . . ..
320
320
321
321
322
40369
40372
40373
40374
40375
.............
....... ......
.. ...........
.............
.............
323
323
323
324
325
40378
40379
40389
40390
40391
.............
.............
........... "
.. ...........
.............
376
376
325
326
326
40392
40394
40395
40396
40404
....... ......
........ " ...
. . . . . . . . . . . ..
.............
.............
326
327
327
327
328
40405
40406
40407
40408
40409
.. . . . . . . . . . ..
.............
.............
.. ...........
........... "
329
329
330
330
331
40410 .............
40411 ., ......... "
CR101 ............
CR102 ............
CR103 ............
331
331
374
374
374
CR104
CR105
CR106
CR107
CR108
............
............
............
............
............
374
374
374
374
374
CR109
CRllO
CR201
CR203
CR204
............
............
............
............
............
374
374
374
374
374
CR206 ............
CR208 ............
CRUO ............
CR212 ............
CR273/8008 .......
374
374
374
374
375
CR274/872A
CR275/866A/3B28 ..
CR301 ............
CR302 ............
CR303 ............
375
375
374
374
374
CR304
CR305
CR306
CR307
CR311
............
............
............
............
..... . . . . . ..
374
374
374
374
374
CR312
CR313
CR314
CR315
CR316
............
............
............
............
............
375
375
375
375
375
CR317
CR321
CR322
CR323
CR324
............
............
............
............
............
375
375
375
375
375
CR325
CR331
CR332
CR333
CR334
............
............
............
............
. . . . . . . . . . ..
375
375
375
375
375
CR335
CR341
CR342
CR343
CR344
............
............
............
............
. . . . . . . . . . ..
375
375
375
375
375
CR351
CR352
CR353
CR354
CR401
............
............
............
............
............
375
375
375
375
375
CR402
CR403
CR404
CR405
CR406
............
............
............
............
............
375
375
375
375
375
CR407
CR408
CR409
CR501
CR502
............
............
............
............
............
375
375
375
375
375
CR503
CR504
CR505
CR506
............
............
............
............
375
375
375
375
477
Index
Absolute Maximum System of Ratings 111
AC Amplifiers ....................... 96
AC/DC AM/FM Radio Receiver
(Circuit) ........................ 408
AC/DC Audio Power Amplifier
(25 W. Circuit) .................. 420
AC/DC Phonograph Amplifier (Circuit) 414
AC/DC Radio Receiver (Circuit) .... 398
AC/DC Stereo Phonograph Amplifier
(3 W. Circuit) .................. 428
AC Voltmeter (Circuit) .............. 466
Alpha ................................ 15
AM/FM Automobile Radio Receiver
(Circuit) ........................ 405
AM/FM Radio Receiver.
Line-Operated (Circuit)
408
Amplification . . . . . . . . . . . . . . . . . . . . . . .. 30
Amplifiers :
AC ............................... 96
Audio ............................ 30
Chopper ...................... 42. 100
Class A .................... 30. 35. 55
Class AB ........................ 30
Class B ........................ 30. 37
Class C ........................ 30. 56
Differential ...................... 42
Direct-Current ................ 41. 95
High-Fidelity .. . . . . . . . . . . . . . . . . .. 39
High-Frequency . . . . . . . . . . . . . . . . . 54
Intermediate-Frequency .......... 43
Neutralized ...................... 45
Phase Inverter ................... 41
~:::h:~uli' .......................: .................. 3~. g~
Radio-Frequency ............. 43. 101
Tuned ........................... 43
Unilateralized .................... 45
Wideband (Video) .... . . . . . . . . . . 50
Amplitude Modulation ............... 26
Anode ...............................
8
Applications ...................... 18. 95
Astable Circuits ...................... 77
Astable Multivibrator (Circuit) ...... 467
Attenuators .......................... 98
Audio Power Amplifiers .............. 35
Audio Power Amplifiers (Circuits):
10 W. High-Quality .............. 416
15 W. High-Quality .............. 418
25 W. Line-Operated (AC/DC)
420
35 W. High-Quality .............. 422
70 W. High-F'idelity .............. 424
Autodyne Converter .................. 73
Automatic Frequency Control ........ 73
Automatic Gain Control .......
48
Forward AGC .................... 49
Reverse AGC ...............
48
Automatic Volume Control ., .... ,... 48
Automobile Radio Receiver, AM/FM
(Circuit) ......................... 405
Automobile Radio Receiver. 6 V
(Circuit) ......................... 396
Avalanche Voltage .................. 335
Balanced Phase-Shift Discriminator .
Base .................................
Battery Chargers (Circuits)
Beta .................................
Biasing ............................ 6.
Bias Stability ........................
Bistable Circuits .....................
28
9
452
15
20
23
77
Bistable Multivibrator (Circuit) .... , 469
Blocking Oscillator .................. , 72
Breakdown Voltage ............... 16. 335
Capacitive Division ................ , 47
Cathode..............................
8
Channel .............................. 89
Characteristics ................ 81. 91. 112
Characteristics Curves ............... 14
Chopper-Type Circuits ............ 42. 100
Circuits (Ulagrams and Parts Lists):
AC/DC AM/FM Radio Receiver .. 408
AC/DC Audio Power Amplifier
(25 W) ...................... 420
AC/DC Phonograph Amplifier ... 414
AC/DC Radio Receiver .......... 398
AC/DC Stereo Phonograph
Amplifier (3 W) ............. 428
AC Voltmeter ................. , .. 466
AM/FM Automobile Radio
Receiver ..................... 405
AM/FM Radio Receiver
(Line-Operated) ............. 408
Astable Multivibrator ............ 467
Audio Power Amplifiers:
10 W. High-Quality .......... 416
15 W. High-Quality .......... 418
25 W. Line-Operated ........ 420
35 W. High-Quality .......... 422
70 W. High-Fidelity .......... 424
Automobile Radio Receiver
(AM/FM) .................... 405
Automobile Radio Receiver (6 V) 396
Battery Chargers ................ 452
Bistable Multivibrator ........... 469
Citizens-Band Transmitter
(27 Mc/s, 5 W) .............. 434
Code-Practice Oscillator ......... 443
Crystal Oscillator (27 Mc/s) .... 440
CW Transmitter (50 Mc/s. 50 W) 436
Electronic Heat Control .......... 459
Electronic Keyer ................. 444
Electronic Timer ................. 458
FM Stereo Multiplex Adapter .... 402
FM Tuner ........................ 400
Grid-Dip Meter .................. 442
Lamp Dinuner ................... 454
Light Flasher .................... 470
Light Minder for Automobiles .. 451
Model Train or Race-Car
Speed Control ............... 456
Motor Speed Control ........... , 454
Multivibrators:
Astable ...................... 467
Bistable ...................... 469
Phonograph Amplifier (AC/DC) . 414
Portable Radio Receivers (3 V) .. 394
Power Amplifier (175 Mc/s. 35 W) 438
Power Oscillator (500 Mc/s. 1 W) 441
Power Supply for Amateur
TransmItter .................. 446
Preamplifier for Phono. FM. or
Tape Pickup ................. 412
Radio Receivers:
AM/FM .................. 405.408
Automobile .............. 396. 405
Line-Operated (AC/DC) 398. 408
Portable .......... .. .. .. .. ... 394
Three-Band .................. 410
Ratio Power Control.
Integral-Cycle .. . . . . . . . . . . . .. 461
RCA Transistor Manual
478
Ring Counter ..
464
Servo Amplifier
462
Shift Register ...
464
Stereo Amplifiers:
1 W, 'l'hree-Stage ....
426
3 W, Line-Operated ..
428
5 W. Three-Stage .. .
430
15 W, High-Quality ....... .
432
Three-Band AM Radio Receiver
410
Voltage Regulators:
Series
448
Shunt ....
450
Voltmeter, AC ...
.... 466
Circuit Configurations ....
11,93
Citizens-Banet Transmitter
(27 Mc/s, 5 W, Circuit) ..... .
434
Code-Practice Oscillator (Circuit)
443
Collector ...................... .
9
Collector-Characteristics Curves
14
Common-Base Circuit ........ .
11
Common-Collector Circuit
13
Common-Drain Circuit .
94
12
Common-Emitter Circuit
Common-Gate Circuit .
95
Common-Source Circuit .....
93
Communications Transceiver
19
Compensating Diodes ...... . ........ 368
Complementary Symmetry ..
38, 82
Computer System ......... .
20
Controls, Tone and Volume
33
Converters ..
86
Coupling .......... .
24
Cross-Modulation ... .
49: 102
Cross-Over Distortion
37
Crystal Oscillators
70
Crystal Oscillator '(27 Mc/s,' C'ircult) 440
Current:
16
Cutoff
Fault
337
Flow.
6
Idling .
23
16
Leakage ...................... .
Maximum Average Forward
337
337
Maximum Surge ........ .
337
Peak Recurrent Forward .
Saturation
...
16
Current-Steering Logic (CSL)
82
Cutoff, Frequency
15
Cutoff, Current
16
CW Transmitter '(50 Mc/s, 50 W,
Circuit)
436
Data:
Diodes ...................... .
378
Transistors .................. 120, 333
Silicon Controlled Rectifiers .
376
Silicon Rectifiers ...
372
Data, Interpretation of
11
Deflection:
Horizontal
65
Vertical ........... .
67
Degenerative Feedback
33
Delay Time ....
76
Depletion Layer ................ .
5
Depletion-Type MOS Transistors
90
Detection
.................... .
26
Differential Amplifiers
42
Diodes:
Compensating ............... .
368
Tunnel ...................... .
362
368
Voltage-Reference
Diode Biasing .................... .
23
Diode Detector ................. .
27
Diode-Transistor Logic (DTL)
81
Direct Coupling ........ .
.. .
24
Direct-Current Amplifiers ... . ..... 41, 95
Dissipation, Transistor ...... .
111
Distortion:
Cross-Modulation ............. 49, 102
Cross-Over ...................... . 37
Harmonic ....................... . 39
Intermodulation
Division, Capacitive
Drain ............. ..........
Drivers
. . ... .....
Dynamic' Characteristics'
Dynamic Range ..
39
47
89
35
14
102
Electrical Connections
Electron Flow ............
Electronic Keyer (Circuit) ......
Electronic Heat Control (Circuit)
Electronic Timer
..........
Emitter .............................
Emitter Configurations (Illustration)
Enhancement-Type MOS Transistors
Energy Barrier ......................
Extrinsic Transconductance
106
6
444
459
458
9
2
90
6
15
10, 91
Fabrication
Fall Time ....
77
Fault Current
337
Feedback ..... .
33
364
Figure of Merit
Filters ....
109
Fixed Bias ...... .
21
Flip-Flop Circuits ..
77, 83
FM Stereo Multiplex' Adapter'
(Circuit) ..... .
402
FM Tuner (Circuit) ................ . 400
Forward AGC
............. .
49
Forward Bias ..........
.
7
Forward Characteristics (Silicon
Rectifier) ................. .
336
Forward Current-Transfer Ratio
15
Frequency Compensation
32
Frequency Control, Automatic .....
73
Frequency Conversion
73
Frequency Cutoff .....
15
Frequency Modulation .............. . 27
74
Frequency Multipliers
Gain-Bandwidth Product
Gain, Automatic Control
Gate ......... .
Gating Circuits
General System Functions
Grid-Dip Meter
15
48
89
78
18
442
Heat Sinks ...................... 107, 350
High-Fidelity Amplifiers .........
39
High-Frequency Considerations ..
109
High-Frequency Power Amplifiers
54
Horizontal Deflection
65
Hysteresis
75
Idling Current .....
23
Impedance Coupling
24
Impurities ..
.............
4
Input Filters .....................
344
Intermediate-Frequency Amplifiers
43
Interpretation of Data
111
Inverse Feedback
33
Inverter. Phase
41
Inverters .
87
Junctions
Lamp Dimmer (Circuit) .........
LC Resonant Feedback Oscillators
Leakage Currents ............
Light Flasher (Circuit) .......
Light Minder for Automobiles
(Circuit) ..... .......... ...
Limiters .........................
Line-Operated Audio Equipment
3
454
68
16
470
451
50
40
Index
479
Logic Circuits .................... 79. 103
Complementary-Symmetry ....... 82
CSL (Current-Steering Logic) .... 82
DTL (Diode-Transistor Logic) .. 81
RCTL (Resistance-Capacitance_
Transistor Logic) ............ 81
RTL (Resistance-Transistor Logic) 80
Materials. Junctions. and Devices ....
3
Maximum Available Gain (MAG) .. 45
Maximum Usable Gain (MUG) ...... 45
Military-Specification Types:
Transistors ....................... 116
Rectifiers . . . . . . . . . . . . . . . . . .
371
Model Train or Race-Car Speed
Control (Circuit)
456
Modulation:
Amplitude
. . . . . . . . . . .. 26
Frequency .. . . . . . . . . . . . . . . . . . . . . . 27
Single-Sideband
. . . . . . . . . . . . .. 60
Monostable Circuits .................. 77
MOS Field-Effect Transistors ....... 9. 89
Applications ...................... 95
Channel ......................... 89
Characteristics ................... 91
Circuit Configurations ...
93
Depletion Type .................. 90
Drain ............................ 89
Enhancement Type
90
Fabrication .... . . . . . . . . . . . . . . . . .. 91
Gate ............................ : 89
Handling Considerations ......... 104
Source ........................... 89
Theory of Operation ............ 89
Motor Speed Control (Circuit) ...... 454
Mounting ............................ 106
Mounting Hardware ...
389
Multivibrators
72
Multivibrators (Circi.iits):··
Astable
467
Bistable
469
Negative Feedback ................
Negative-Resistance Characteristic ..
Neutralized Amplifiers
. . . . . .. 45.
Noise Figure .........
31.
Noise Immunity .........
Nonsinusoidal Oscillators ............
N-P-N Structures
.. . ....... .
N -Type Material
. .. . .. . .. .. .. ... ...
33
363
102
101
83
71
7
5
Oscillation ..
.. ....... ............ 68
Outlines ...........
. . . . . . . .. 380
Overlay Transistors
. . . .. 11. 16
Overload Protection
339. 357
Parallel Arrangement .
Peaking:
Shunt
Series ...........................
Peak Recurrent Forward Current ...
Peak Reverse Voltage ....
Phase Inverter ..............
Phase-Shift Discriminator ..
Phase-Shift Oscillator
............
Phonograph Amplifier
(Line-Operated. Circuit)
Portable Radio Receiver (3 V. Circuit)
Power Amplifiers. High-Frequency
Power Amplifier (175 Mc/s, 35 W.
Circuit) ........................
Power Oscillator (500 Mc/s. 1 W.
Circuit) .....................
Power Supply for Amateur
Transmitter (Circuit) ............
Power Switching ....................
.Preamplifier for Phono. FM. or
Tape Pickup (Circuit) ...........
339
51
52
337
336
41
28
71
414
394
54
438
441
446
85
412
Propagation Delay ..................
P-N Junctions .......................
P-N-P Structures ....................
Positive Feedback ....................
Power Amplifiers. Audio ............
Preamplifiers . . . . . . . . . . . . . . . . . . . . . . ..
P-Type Material ....................
Pulse Time ..........................
Punch-Through Voltage..............
Push-Pull Amplifiers ................
79
5
7
33
35
31
5
77
17
37
IIQ" (Selectivity)
..................
43
Radiation Considerations ............
Radio-Frequency Amplifiers ...... 43.
Radio Receivers (Circuits):
AM/FM .................... 405.
Automobile .................. 396.
Line-Operated (AC/DC) .... 398.
Portable ....................... "
Three-Band ......................
Ratings ..............................
Ratio Detector .......................
Ratio Power Control. Integral-Cycle
(Circuit) ........................
RC Feedback Oscillators ............
Reach-Through Voltage ..............
Rectifier Circuits ....................
Rectifiers:
Silicon ...........................
Silicon Controlled ................
Tunnel ..........................
Rectifiers. Military-Specification Types
Rectifier Symbols .....................
Regenerative Feedback
. . . . . . . . ..
366
101
Reg~:.\~~ Circ~its:....
408
405
408
394
410
111
29
461
71
17
340
335
352
366
371
370
33
41
42
88
106
24'
Shunt ............................
Switching ....
..............
Reliability .............. . . . . . . . . . . . ..
Resistance-Capacitance Coupling .....
Resistance-Capacitance-Transistor
Logic (RCTL) ..................... 81
Resistance. Thermal .................. 54
Resistance-Transistor Logic (RTL) ... 80
Resistivity .................. . . . . . . . . .
3
Resonant Circuits .
43
Reverse AGC .....
48
Reverse Bias
6
Ring Counter (Circuii)·:: ............. 464
Ripple.........................
340
Rise Time
77
Saturation Current ......
Saturation Voltage .........
Scanning Fundamentals ....
Second Breakdown ...
Selection Charts ......
Selectivity (Q) ..
Self-Bias .............................
Semiconductor Materials ..
Series Arrangement
Series Peaking ..........
Series Regulators
............
Series Regulator (Circuit) ...
Servo Amplifier (Circuit) ............
Shielding ................. ...........
Shift Register (Circuit)
Shunt Peaking .......................
Shunt Regulators .....................
Shunt Regulator (Circuit) ............
Signal-to-Noise Ratio .................
Silicon Controlled Rectifiers ........ 8.
Characteristics ...................
Construction .....................
Current Ratios ...................
Data .............................
Overload Protection ..............
Power Control ...................
16
17
61
16
117
33
22
3
339
52
41
448
462
109
464
51
42
450
31
352
353
352
358
312
357
358
RCA Transistor Manual
480
Ratings ...........................
Triggering Characteristics ... . . . . ..
Switching Characteristics .........
Silicon Rectifiers ................... 8.
Capacitive-Load Circuits .........
Circuit Factors ...................
Data ..............................
Forward Characteristics ..........
Heat Sinks .......................
Military-Specification Types ......
Overload Protection ..............
Ratings .. .. .. .. .. .. .. .. .. .. . .. ...
Reverse Characteristics ...........
Series and Parallel Arrangements
Thermal Considerations ..........
Single-Sideband (SSB) Modulation...
Source ...............................
Stability Factor ......................
Static Characteristics .................
Stereo Amplifiers (Circuits):
1 W. Three-Stage .................
3 W. Line-Operated ..............
5 W. Three Stage ................
15 W. High-Quality ...............
Storage Time .........................
Stored Base Charge...................
Structures:
N~P-N
.................. ..........
P-N-P ............................
354
355
356
335
345
340
372
336
350
371
339
336
335
339
335
60
89
23
14
426
428
430
432
77
17
7
7
Surge Current •. Maximum ............. 337
Sustaining Voltage ................... 16
Switching ............................ 75
Switching Regulator ............ '" ... 88
Switching Times ..................... 76
Symbols. Rectifiers and Diodes ...... .. 370
Symbols. Transistor ................... 113
Sync ................................. 62
Sync Separator ....................... 62
Technical Data .............. 120. 333.
Television:
Horizontal Defiection .............
Receiver ..........................
Scanning Fundamentals ..........
372
Testing ..' .............................
Thermal Considerations ...............
Thermal Resistance ...................
Thermal Runaway ....................
Thermistor Bias ......................
Three-Band AM Radio Receiver
(Circuit) ...........................
Thyristor (SCR) .....................
Tone Controls ........................
Transconquctance. Extrinsic ..........
Transfer-Characteristics Curves .......
Transformer Coupling ................
Transient Effects .....................
106
335
34
335
23
65
19
61
~cairieiIeclion":::::::::::::::: ~~
410
352
33
15
14
24
106
Transistor:
Applications ......................
Characteristics. . . . . . . . . . . . . . . . . . . .
Circuit Configurations ............
Data ......................... 120.
Designs...........................
Dissipation ......................
Fabrication .......................
Military-Specification Types ......
Mounting. Testing. and Reliability.
Schematic Diagrams ..............
Selection Charts ..................
Types:
Alloy-Junction ...................
Drift-Field .......................
Epitaxial-Mesa ...................
Grown-Junction ..................
Mesa .............................
Overlay .......
...............
Planar... ......... ...............
Point-Contact . . . . .
.. ... .. .. . ..
Transition Region .. .................
Triggered Circuits ..
. . . . . . . . . . . . . ..
Tuned Amplifiers .....................
Tuned-Base Oscillator ................
Tuned-Collector Oscillator ............
Tunnel Diodes .... ......... . . . . . .. 8.
Turn-Off Time . . . .. ..................
Turn-On Time ...
...........
Types of Devices
Unilateralized Amplifier
18
14
10
333
10
111
10
116
106
'9
117
10
10
11
10
11
11
11
10
5
77
43
69
69
362
77
77
8
45
Vertical Defiection ................... 67
Video Amplifiers ..................... 50
Voltage:
Avalanche ........................ 335
Breakdown . . . . . . . . . . . . . . . . . . .. 16. 335
Peak Reverse ..............
336
Punch-Through ........
17
Reach-Through.... .. ... . .... ..... 17
Saturation ........................ 17
Sustaining...... ........... .. ..... 16
Zener ............................ 335
Voltage-Controlled Attenuators ....... 98
Voltage-Reference Diodes .......
368
Voltage Regulators (Circuits):
Series ........................... . 448
Shunt ................ .
450
Voltmeter, AC (Circuit) ... .
.. 466
33, 48
VolUme Controis ............ .
Wideband (Video) Amplifiers
Zener Voltage
50
335
WHERE TO FIND DATA ON
RCA Semiconductor Devices
TRANSISTORS:
Active types-arranged in numerical-alphabetical-numerical sequence on pages 120
through 332
Discontinued types---charts on pages 333 and
334
SILICON RECTIFIERS:
Charts on pages 372 to 375
SILICON CONTROLLED RECTIFIERS:
Charts on pages 376 and 377
TUNNEL DIODES AND TUNNEL RECTIFIERS:
Charts on pages 378 and 379
OTHER DIODES:
Pages 378 and 379
COMPLETE INDEX TO INDIVIDUAL DEVICES
ON PAGES 473 TO 476
Source Exif Data:
File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.3 Linearized : No XMP Toolkit : Adobe XMP Core 4.2.1-c041 52.342996, 2008/05/07-21:37:19 Create Date : 2017:09:01 14:23:04-08:00 Modify Date : 2017:09:01 14:41:33-07:00 Metadata Date : 2017:09:01 14:41:33-07:00 Producer : Adobe Acrobat 9.0 Paper Capture Plug-in Format : application/pdf Document ID : uuid:936c1e29-bb9d-b745-a2e4-16eb5556015d Instance ID : uuid:3d822c2c-3bfe-4c4d-96d1-66e86234eaab Page Layout : SinglePage Page Mode : UseNone Page Count : 484EXIF Metadata provided by EXIF.tools