1975_RCA_RF_Microwave_Devices 1975 RCA RF Microwave Devices

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:=g RF/Microwave Devices

A New Approach To Data Service
1975 RCA Solid State DATABOOKS
Seven textbook-size volumes covering all current commercial
RCA solid-state devices (through January 1, 1975)
Linear Integrated Circuits and DMOS Devices
(Data only) ..............................SSD-201 C
Linear Integrated Circuits and DMOS Devices
(Application Notes only) ....................SSD-202C
COS/MOS Digital Integrated Circuits ........... SSD-203C
Power Transistors .......................... SSD-204C
RF/Microwave Devices ......................SSD-205C
Thyristors, Rectifiers, and Diacs ..............SSD-206C
High-Reliability Devices ..................... SSD-207C
Announcement Newsletter: "What's New in Solid State"
Availabe FREE to all DATABOOK users.
"Bingo-type Response-Card Service" included with Newsletter Available FREE to all DATABOOK users.
Update Mailing Service available by subscription.
Indexed Binder available for Update Filing.
NOTE: See pages 3 and 4 for additional information on this
total data service. To qualify for Newsletter mailing,
use the form on page 4 (unless you received your
DATABOOK directly from RCA). You must qualify
annually since a new mailing list is started for each
edition of the DATABOOKS.

nell
RF/Microwave Devices
This DATABOOK contains complete data and
related application notes on rf and microwave
power devices presently available from RCA Solid
State Division as standard products. For ease of
type selection, power-frequency curves and application charts are given on pages 9-16. Data sheets
are then included in type number sequence,
followed by dimensional outlines for all types,
application notes in numerical order, and finally a
comprehensive subject index.
To simplify data reference, data sheets are arranged
as much as possible in numerical~alphabetical­
numerical sequence of type numbers. Because
some data sheets include more than one type
number, however, some types may be out of
sequence. If you don't find the type you're looking
for where you expect it to be, please consult the
Index to Devices on pages 7 and 8.

Trade Mark(sl Registered 
Marca(sl Registrada(sl

Copyright 1974 by RCA Corporation
(All rights reserved under Pan-American Copyright Conventionl
Printed in USA/11-74

Information furnished by RCA is believed to be accurate and reliable. However, no responsibility is assumed
by RCA for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of RCA.

RCA Solid State I Box 3200 I Somerville, N.J., U.S.A. 08876
RCA Limited I Sunbury-on-Thames I Middlesex TW16 7HW, England
RCA s.a. I 4400 Herstal I Liege, 8elgium

2

RCA Solid State
Total Data Service System
The RCA Solid State DATABOOKS are supplemented throughout
the year by a comprehensive data service system that keeps you
aware of all new device announcements and lets you obtain as much
or as little product information as you need - when you need it.
New solid-state devices and related publications announced during
the year are described in a newsletter entitled "What's New in Solid
State". If you obtained your DATABOOK(s) directly from RCA,
your name is already on the mailing list for this newsletter. If you
obtained your book(s) from a source other than RCA and wish to
receive the newsletter, please fill out the form on page 4; detach it,
and mail it to RCA.
Each newsletter issue contains a "bingo"-type fast·response form for
your use in requesting information on new devices of interest to you.
If you wish to receive all new product information published
throughout the year, without having to use the newsletter response
form, you may subscribe to a mailing service which will bring you all
new data sheets and application notes in a package every other
month. You can also obtain a binder for easy filing of all your
supplementary material. Provisions for obtaining information on the
update mailing service and the binder are included in the order form
on page 4.
Because we are interested in your reaction to this approach to data
service, we invite you to add your comments to the form when you
return it, or to send your remarks to one of the addresses listed at
the top of the form. We solicit your constructive criticism to help us
improve our service to you.

3

Order Form for "What's New in Solid State"
and for further information on Update Mailings and Binders
Please fill out just one copy of this form, and mail it to:
(a) from U.S.A. and Canada:
RCA Solid State Division
Box 3200
Somerville, N. J., U.S.A. 08876
(b) from Latin America and Far East:
RCA Solid State
I nternational Sales
Somerville, N. J., U.S.A. 08876
(c) from United Kingdom, Europe, Middle East, and Africa:
RCA Limited
RCA s.a.
Sunbury·on·Thames
or 4400 Herstal
Middlesex TW16 7HW, England
Liege, Belgium

o Please add my name to the mailing list fo~ "What's New in Solid State"
o Please send me details on obtaining update mailings for my DATABOOKS
and a binder for filing of supplementary material.

Name

Company

Address
Home
Business

II
II
II
81
II

IIIII
IIIII
11 1 I I
1I I I I
1I I I I
(Last)

(Number)

(City)

II
II
1I
1I
II

III
III
1I I
1I I
1I I

III
III
I 1I
1I I
11 I

IIII
I 1I I I I I I I
I 1 I I I 1 1 1I
'-1'-1'--1""""1I""""I'-Ir-,--,II
I 1 I I 11 1 I I
(Initials)

(Street, RFD, P.O. Box)

(State or Prov.)

(Zip or Pstl. Zone)

(Country)
Function: (Check One)

A 0 Broadcast
8 0 Communication
C 0 Instrumentation/Control
Research/Development
o 0 Computer/Data Processing
Design Engineer
E 0 Computer. Peripheral
Application/Components
F 0 Automotive
Engineer
G 0 Industrial
Production/Manufacturing
H 0 Medical
Documentation/Library
I 0 Research
Reliability/QA
J 0 Transportation
EducationlTrairiing
K 0 Consumer. Electronic
Program/Project Management L 0 Consumer. Appliance
Marketing
M 0 Space
N 0 Ordnance
00 Avionics
p 0 Electronic Warfare

A 0 Executive/Administration
8 0 Purchasing/Procurement

C0
00
E0

F0
G0
H0
I 0

J 0
K 0

4

Activity: IChock One)

Product Interest:
{Indicate order of interest if
mora than one is m.rked)

AD Linear IC's
BDOigita,'C·s. COS/MOS'

cD DigitallC's. Bipolar
OOThyristorslRectifiers
eO Liquid Crystals

FDSemiconductor Diodes

GO RF. Power Semiconductors
HDMOSFETS
I
Power Transistors
J DPower Hybrid Circuits

o

Table of Contents
Page
Index to Application Notes .........................................

6

Index to RF Power Devices .........................................

7

Power-Frequency Curves:
f = 2 to 1000 MHz, VCC = 28 or 50 V . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 9
f = 500 to 5000 MHz, VCC = 22 or 28 V ........................... 10
f=2to1000MHz,Vcc=90r12.5V ............................ 11
Application Charts:
Types for Microwave Applications ................................
Types for UHF Military Applications ..............................
Types for UHF Mobile-Radio Applications .........................
Types for VHF Mobile-Radio Applications ......................., ..
Types for Aircraft-Radio Applications .............................
Types for Marine-Radio Applications ..............................
Types for Single-Sideband Applications and
Military Communications ......................... ~ ............
Types for CATV/MATV and Small-Signal, Low-Noise Applications .......
Types for CB-Radio Applications .................................

12
13
13
14
14
15
15
16
16

Technical Data ........................... ,........................ 17
Dimensional Outlines .........................•....................368
Application Notes ................................................379
Subject Index ............ ; .......................................486

5

Appl ication Notes
No.
1CE-402
AN-3749

Title

.........
.........

AN-3764

.........
.........

AN-4025

.........

AN-4421

.........

AN-4591

.........

AN-3755

AN-4774
AN-6010

.........
.........

Page

Operating Considerations for RCA Solid-State Devices ....•••..•.•.• 380
40-Watt Peak-Envelope-Power Transistor Amplifier for
AM Transmitters in the Aircraft Band (118 to 136 MHz) •..••.•..•••• 385
UHF Power Generation Using RF Power Transistors •......•••.••.•• 390
Microwave Amplifiers and Oscillators Using the RCA-2N5470
Power Transistor •••...•....•••••.•...•••.••...•.••..... 402
The Use of Coaxial-Package Transistors in
Microstripline Circuits ...••••...•.•....•••••..•..••••.••. 411
16- and 25-Watt Broadband Power Amplifiers Using RCA-2N5918,
2N5919A, and 2N6105 UHF/Microwave Power Transistors ...•••••••. 417
Use of the RCA-2N6093 H F Power Transistor in .
Linear Applications •••.•.••••..•......•.•••••...••..•••• 427
Hotspotting in RF Power Transistors ...••...•.••••••••....•.•• 437
Characteristics and Broadband (225-to-400-MHz) Applications
of the RCA-2N6104 and 2N6105 UHF Power Transistors ...•...•.••. 441

AN-6118

.........
.........

AN-6126

.........

60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF
Amplifiers using RCA-2N6105 VHF/UHF Power Transistors ••.•••••.• 465

AN-6229

.........

Microwave Power-Transistor Reliability
as a Function of Current Density
and Junction Temperature • . . . • . . . . . • . . . . . . . . . . . . . . . . . . . . . . 471

AN-6291

.........

AN-6084

AN-6307

6

.........

High-Power Transistor Microwave Oscillators ••••••....•..••...••. 451
10-,16-,30-, and 60-Watt Broadband (620-to-960-MHz)
Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave
Power Transistors •••••••••..•..•..••••......•...••.•.•• 458

Microwave Transistor Oscillators ..••.•.••..••......•....••.•• 475
Microwave Amplifiers and Oscillators
Using the RCA3000-Series Transistors .•.•...•............•••.. 480

Index to RF Power Devices
Output Power (W)
or

Type No,

Pago

Noise Figure (dB)
or
Power Gain (dB)

2N918
2N1491
2N1492
2N1493
2N2631

18
22
22
22
26

NF"6
0.Q1

0.1
0.5
7.5
NF" 4.5
10

Frequency
(MHz)

Supply
Voltage (V)

File
No.

60
70
70
70
50
450
50
50
50
50

6·15(VCE)
20
30
50
28
6-15(VCE)
28
28
28
50

83
10
10
10
32

269
270

2000
2000
470
200
200

21
28
12.5
12
12

497
497
514
548
548

279
281
288
289
296

40896
40897
40898
40899
40909

260
260
265
265
272

GpE" 15
GpE" 18
2

200
200
2300
2300
2000

12
12
22
25

548
548
538
538
547

40915
40934
40936
40940
40941

276
280
283
287
291

NF" 2.5

450
470
30
400
400

10
12.5
28
28
28

574
550
551
553
554

40953
40954
40955
40964
40965

295

1.75
10

295
299
299

25
0.4

156
156
156
470
470

12.5
12.5
12.5
12
12

579
579
579
581
581

302
302
305
305
310

2
30
45
1.75

470
470
470
470
175

12.5
12.5
12:5
12.5
12.5

596
596
656
656
597

310
310
313
313
313

0.05
0.5
6

175
175
118
118
118

12.5
12.5
12.5
12.5
12.5

597
597
606
606
606

1000

28

90

175
400
88

12
28
13.5

228
217
249

24
28
28
24
28

249
255

1.2

88
400
30
76
400

15
NF"3
NF" 4.5
NF "2.5

136
200
200
200

24
15
6(VCE)
8(VCE)

(tripler)

2N5915
2N5916
2N5917
2N5918
2N5919A

142
148
148
153
157

2N5920
2N5921
2N5995
2N6093

162
168
175
179

2N6104
2N6105
2N6265
2N6266
2N6267

184
184
190
195
200

High-speed
switching

10
16

7
75(PEP)
30
30

5
10

268

313

High-speed
switching

6

70
74
74
301
301

0.5

2.5

132
137
142

12.5
13.5
24
12
12

251
251
256
260
260

71

2N5470
2N5913
2N5914

135
50
50
27
27

40836
40837
40893
40894
40895

2N4012

127

68
68
68

301
356
655
386
386

83
386
72
229
80

2N5262

13.5
13.5
13.5
12.5
12.5

12
15
12
28
28

6-15 (VCE)
28
28
6-15(VCE)
28

104
108
114
119
123

175
175
175
135
135

27
200
175
175
400

200
175
400
450
400

2N5102
2N5109
2N5179
2N5180
2N5189

628
628
301
301
301

3.5
NF" 3
0.1
13.5

NF" 4.5
13.5
10
NF" 3.9
1

92
96
100

28
28
12
12
12

231
244
248
49
49

18
49
59
63
67

88

2000
2000
27
27
27

40582
40608
40637A
40665
40666

2N3600
2N3632
2N3733
2N3839
2N3866

12

3

237
241
241
231
231

NF" 4.5
2.5

20
15
25(PEP)
24

546
546
617
626
627

40292
40340
40341
40446
40581

49
56
49

84

22
22
10
28
28

40291

2N3375
2N3478
2N3553

386
77
386

2N4933
2N5016
2N5070
2N5071
2N5090

2300
2300
890
2000
2000

234
234
234
237
237

28
6·15(VCE)
28

1

10
10
0.1

File
No.

40280
40281
40282

switching
400
200
175

5

2
6.5
NF"6

Supply
Voltago (V)

56

High-speed

75
80
84

206
206
216
220
223

Frequency
(MHz)

227
227
231
231
231

45

2N4427
2N4440
2N4932

2N6268
2N6269
2N6389
2N6390
2N6391

or

2N6392
2N6393
40080
40081
40082

2N3262

15

Noise Figure (dB)

61
32
42
44
50

42

38

Pago

Power Gain (dB)

2N2857
2N2876
2N3118
2N3119
2N3229

30
26
34

Output Power (W)
or

Type No.

~0290

2000
470
470

28
12
12

350
423
424

470
400
400
400
400

12
28
28
28
28

424
425
425
448
505

2000
2000
175
30

28
28
12.5
28

440
427
454
484

40967
40968
40970
40971
40972

400
400
2000
2000
2000

28
28
28
28
28

504
504
543
544
545

40973
40974
40975
40976
40977

295

0.4
3

4
12

6
25
30

3
3.5

1.5
15
GpE" 15
GpE" 15

6
2

2
20(PEP)

5

0.5

6

10

25

22

70
70

7

Index to RF Power Devices (cont'd)

Output Power (W)

Type No.

or
Poge Noise Figure (dB)
or

Supply
Voltage (V)

File

(MHz)

616
616
616
616
616

Frequency

No.

Power Gain (dB)

8

41008
41008A
41009
41009A
41010

317
317
317
317
317

0.5
0.5
2
2
5

470
470
470
470
470

9
9
9
9
9

41024
41025
41026
41027
41028

322
325
325
331
331

10
3
10

1000
1000
1000
1000
1000

28
28
28
22
22

41038
41039
41044
RCA0810-30
RCA2001

337
340

354
348
353

0.75
NF = 3.2
0.4
30
I

1680
200
4360
1000
2000

20
15(VCE)
20
28

RCA2003
RCA2005
RCA2010
RCA2023·12
RCA2310

220
223
227
357
380

2.5
5
10
12.5
10

2000
2000
2000
2300
2300

28
28

626
627

28

628

22
24

801
765

RCA3001
RCA3003
RCA3005

363
363
363

3000
3000
3000

28

2.5
4.5

28

657
657
657

28

28

658
641
641

640
640
679
764
783
790
759

R F Power Transistors for Operation at 28 V or 50 V
100

o

Collector-Supply

II~,

.......... r,o

•

Voltages (Vee) :

~

60

28 V
5OV----

'\

40

-

~

2/V

.A. 2
W'

~~

~

20

- .....
.

<9
......

-

_

4

~0.;>

~"'6'

I-

'ou/6

~~
~

...........

'\

~o

:l

I~

2

~

-~

.A.
r

2/VJ

-+

::::.

(.)

ii:

>

I-

1

o.8
o. 6

1--....

r'?

'"

~

"

......
o.4

-

" ~\

\- ~ ~~

0..

I-

:l

~

~

",.;>~~

~2N5916

I-

..J

<>:,

~--.

~~

0..

o

2/V6/D4

~9194

~ ~'

6

w

~

~.;>'"
.~

....

.w

Ifa:

I~ ~

- -~

- "'"
~

... 2 2876

8

~

5994

5090

~

I'-.

~- ~ ~ ~

~ ~ 1\

~

, ,'\

A.2 1492
'0'

r--........

0, 2

o.1
2

30

40

"

60

\

80

100

400

200

60D

800 1000

FREQUENCY - MHz

CATV

lW

MaBILE R

'W

56

TACTICAL RADIQ

Q

22S

AIRCRAFT
RADIQ
92CM-24934

9

RF Power Transistors for Operation at 22 V or 28 V
100
Collector - Supply
Voltages (V CC ):

80

28 V

60

40

-r--

RC 06,,_

2N667
2N692
2N693

V

20

10

-- -- ,-"

8

~

6

~

o:J

Fl

"'_~-2

",,""~ ~ r........

.no

r

ffi

;2N5921
2N6266
2N6391
RCA2005

..........

2N6 69

~

22V - - -

~

.....

~

(oil'

~

-- 2N59 0
2N62 5
2N63 0
RCA: 003

u

ii:
~

Ii(~

':t

2N6 68

4088

4

O(~.

23

,
--v1~
~ " ~,
"d"~(>~

.. ......

102 (2
102 (2 V ) _

-,

2

"1V5470~

RCA2001

"~X,.

0.8

""'"

4~

0.6

~

~
~ ."'0li!;»
~
........
OSC

,

,n.R tr or,
g
40836 (OSC)

0.4
41

(0

0.2
500 600

800

620

~ pil10

1000
960

2000
FREQUENCY - MHz
1250

96

RADAR. ELEMETR
MICROW VE RELA
1250

AL

Ni=TION
& FF
1200

1400

~
PHASED
ARRAY

3000

~~)

4000

5000

3000 3600 4200 5000
ATEL ITE .~ !ilL N I NG
C MMU ICA 10~ S ST MS
300 600

~
F'~
RAY
)

~

42 ~. 40

lA~

LTI

~~

ERS

92CM-24935

10

R F Power Transistors for Operation at 9 V or 12.5 V
1110

'""

Collector-Supply
Voltages (Vcci :

0-

12.5V--9V---

-

60

~

40

~

~

20

~~
10

~

"

1Z1Ja.9.;>

~ r--...

-~ - - ~$9k...

~,
"0
-'141;

~

<'9,,>,

~41;

~~~ ~6,

"b~' " ~ ~

~ 59/ 4

~ r-

--~~ 9....~

EPI

02

~~
~

-- r--r.:::: --

. ' v29/ (-'1"'1

'V -...~

~~

~&\

r-_

~, ~008

0.8

~,

~

0.6

~~

~41;

~

0.4

0.2

0.1

.

i.1

2

30

40

60

ACTICA
RADlQ

80

1110

200
FREQUENCY - MHz

400

6110

8110 1000

MQ ILE
EPH NE

92CM·24936

11

Types For Microwave Applications
Type

Operating
Frequency
(GHz)

Min.
Output
Power

Min.
Power
Gain
(dB)

Collector
Efficiency

(W)

Collector·
Supply
Voltage
(V)

(%)

Package
Type

.Lead
41024
41038

1
1.68

1
0.75

28
20

5
(OSC)

35
20

TO·39
TO-46

Stripline
41027
41025
41028
41026
2N6265
2N6266
2N6267
2N6268
2N6269
2N6390
2N6391
2N6392
2N6393
RCA2001
RCA2003
RCA2005
RCA2010
RCA2310
RCA3001
RCA3003
RCA3005
41044

1
1
1
1
2
2
2
2.3
2.3
2
2
2
2
2
2
2
2
2.3
3
3
3
4.36

3
3
10
10
2
5
10
2
6.5
3
5
10
10
1
2.5
5
10
10
1
2.5
4.5
0.4

22
28
22
28
28
28
28
22
22
28
28
28
28
28
28
28
28
24
28
28
28
20

6
7
5.5
6
8.2
7
7
7
5
8
7
5
7
7
7
7
5
8.2
7
5
5
(OSC)

50
50
50
50
33
33
35
33
32
30
30
33
35
30
30
30
33
30
30
30
30
15

HF-41
HF-41
HF-41
HF-41
HF-28
HF-28
HF-28
HF-28
HF-28
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-46
HF-56

2
2
2
2
2
2
2.3
2.3

0.5
1
1.25
2.
2
5
2
6

21
28
28
28
25
28
22
22

(OSC)
5
(OSC)
10
(OSC)
7
7
6

20
30
20
40
20
40
35
35

TO-215AA
TO-215AA
TO-215AA
TO-215AA
TO-201AA
TO-201AA
TO-215AA
TO-201AA

Coaxial
40836
2N5470
40837
2N5920
40909
2N5921
40898
40899

HF-55
HF-50

BLDCK DIAGRAM OF A 9-WATT 1.7-GHZ AMPL.IFIER fOR MICROWAVE
RELAY LINK WITH Vcc·2:5 VOLTS.

BLOCK DIAGRAM OF A 6-WATT
FROM A 22-VOLT SUPPLY,

2.~Hz

AMPLIFIER THAT OPERATES
92CS- 24925

BLOCK DIAGRAM OF A 12.e-WATT 2.0-2.3 GHz

AMPLIFIER.
92CS~24927

12

Types For UHF Military Applications
Type
2N3866
40941
2N5916
2N5917
40940
2N5918
2N5919A
2N6104
2N6105

Operating
Frequency
(MHz)

Min.
Output
Power
(W)

Collector·
Supply
Voltage
(V)

Min.
Power
Gain

28
28
28
28
28
28
28
28
28

10
10
10
10
5.2
8
6
5
5

400
400
400
400
400
400

Package
Type

(dB)

TO·39
HF-31
TO-216AA
HF-31
TO-216AA
TO-216AA
TO-216AA
HF-32
TO-216AA

BLOCK DIAGRAM OF A IOO-WATT 225-400 MHz AMPLIFIER.
92CS-24929

Types For UHF Mobile-Radio Applications
Type
41008
41008A
41009
41009A
41010
40964
40965
2N5914
40934
40967
40968
2N5915
40893
40970"
40971"

Operating
Frequency
(MHz)
470
470
470
470
470
470
470
470
470
470
470
470
470
470
470

Min.
Output
Power
(W)

0.5
0.5
2
2
5
0.4
0.5
2
2
2
6
6
15
30
45

CollectorSupply
Voltage
(V)
9
9
9
9
9
12
12·
12.5
12.5
12.5
12.5
.12.5
12.5
12.5
12.5
2W

PIN-O.l5 W

41008

41009

41010

Min.
Power
Gain

Package
Type

(dB)

5.2
5.2
6
6
4
6
7
7
7
7
4.8
4.8
5.2
5
4.8

HF-47
HF-41
HF-47
HF-41
HF-41
TO-39
TO-39
TO-216AA
HF-31
HF-44
HF-44
TO-216AA
HF-36
HF-40
HF-40

"oUT" 5W

SLOa< DIAGRAM OF 9-V. 5-W. 440-470 MHz: AMPLIFIER FOR

HAND-HELD MOBILE EQUIPMENT.
92CS-24931

.. Internal input matching

13

Types For VHF Mobile-Radio Applications
Type
2N4427
40280
2N5913
40972
40281
2N5995
40973
40282
40974

Operating
Frequency
(MHz)
175
175
175
175
175
175
175
175
175

Min.
Output
Power
(W)

CollectorSupply
Voltage
(V)

Min.
Power
Gain

1
1
1.75
1.75
4
7
10
12
25

12
13.5
12.5
12.5
13.5
12.5
12.5
13.5
'12.5

10
9
12.4
12.4
6
9.7
7.6
4.8
4.5

Package
Type

(dB)

TO·39
TO-39
TO-39
TO-39
TO-60
TO-216AA
HF-44
TO-SO
HF-44

BLOCK DIAGRAM OF A 25-WATT AMPLIFIER FOR 148-175 MHz
MOBILE APPLICATION.
92CS-249~2

Types For Aircraft-Radio Applications
Type
40975
40976
40977
2N5994
40290
40291
40292
2N5102

Operating
Frequency
(MHz)
118-136
118-136
118-136
118-136
118-136
118-136
118-136
118-136

Min.
Power
Gain

(W)

CollectorSupply
Voltage
(V)

0.05
0.5
6
15
2
2
6
15

12.5
12.5
12.5
12.5
12.5
12.5
12.5
24

10
10
10.8
7
6
6
4.8
4

Min.
Output
Power

BLOCK DIAGRAM OF A6-WATT AMPLIFIER fOR 118-136 MHz
AIRCRAFT-RADIO APPLICATION.
92CS-24930

*New product - coming soon

14

Package
Type

(dB)

TO-39
TO-39
HF-44
TO-216AA
TO-39
TO-60
TO-60
TO-60

Types For Marine-Radio Applications
Type

Operating
Frequency
(MHz)

40953
40954
40955

156
156
156

Min.
Output
Power

Min.
Power
Gain

(W)

Collector·
Supply
Voltage
(V)

1.75
10
25

12.5
12.5
12.5

12.4
7.6
4.5

Package
Type

(dB)

TO·39
HF-44
HF-44

BLOCK DIAGRAM OF A 25-WATT AMPLIFIER FOR IS6-162 MHz
MARINE APPLICATION.

BLOCK DIAGRAM OF A la-WATT AMPLIFIER FOR 156-162 MHz

MARINE APPLICATION.

Types For Single-Sideband Applications
and For Military Communications
Type
40082
2N5992
40936
2N5070
2N6093
2N5071

Operating
Frequency
(MHz)
30
30
30
30
30
76

Min.
Power
Gain

(W)

Collector·
Supply
Voltage
(V)

2.5(PEP)
15(PEP)
20(PEP)
25(PEP)
75(PEP)
24

12.5
12.5
28
28
28
24

10
10
13
13
13
9

Min.
Output
Power

BLOCK DIAGRAM OF A IOO-WATT

sse

Package
Type

(dB)

TO-39
TO-216AA
TO·60
TO-60
TO·217AA
TO-60

AMPLIFIER FOR

2-30 MHz OPERATION.

BLOCK DIAGRAM OF A 24-WATT AMPLIFIER fOR
30-16 MHz OPERATION.
'
92CS-24928

15

Types For CATV/MATV and Small-Signal
Low-Noise Applications
Operating
Frequency
(MHz)

Type
2N918
2N3478
2N5179
40894
40895
40896
2N3600
40897
40915
2N2857
2N3839
2N5109
40608
2N6389
41039

60
200
200
200
200
200
200
200
450
450
450
200
200
890
200

CollectorNoise to-Emitter
Figure Voltage
(dB)
(V)
6
4_5
4.5
3

4.5

2.5
4.5
3.9
3
3

6
3.2

Min_
Power
Gain
(dB)

13
11.5
15
15
15
15
17
18
14
12.5
12.5
11
11
15
8

6
6-15
6
12
12
12
15
12
10
6
6
15
15
10
15

Package
Type
TO-72
TO-72
TO-72
TO-72
TO-72
TO-72
TO-72
TO-72
TO-72
TO-72
TO-72
TO-39
TO-39
TO-72
TO-39

Types For CB-Radio Applications

Type

Frequency
(MHz)

40080
40081
40082t
40581 t

27
27
27
27

Min.
Output
Power

Package
Type

(W)

CollectorSupply
Voltage
(V)

0.1
0.4
3.0
3.5

12
12
12
12

TO-5
TO-5
TO-39
TO-39

BlOCK DIAGRAMS OF 3:"WATT AND 3.5-WATT OSCILLATOR I
AMPLIFIER CHAIN FOR CB-RADIO APPLICATIONS.
92CS-24926

t Available with flange

16

Technical Data

17

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 83

RF Power Transistors

OOCl8LJD

2N918
2N3600

Solid State
Division

RCA-2N918 and RCA-2N3600 are double-diffused
epitaxial planar transistors of the silicon n-p-n type.
They are extremely useful in low-noise-amplifier, oscillator, and converter applications at VHF frequencies.
These devices utilize a hermetically sealed fourlead JEDEC TD-72 package. All active elements of
the transistor are insulated from the case, which may
be grounded by means of the fourth lead in applications
requiring minimum feedback capacitance, shielding of
the device, or both.

MAXIMUM RATINGS,

Absolute~Moximum

Values:

SILICON N-P-N
EPITAXIAL PLANAR
TRANSISTORS
For VHF Applications
In Military, Communications,
and Industrial Equipment

JEDEC
TO·72

2N918 2N3600

FEATURES

COLLECTOR-TD-BASE
VOLTAGE,VCBO . . . . . . . . . . . .

30

30 max.

V

15

15 max.

V

max.

V

• hermetically sealed four.lead package

COLLECTOR-1'D-EMITTER
VOLTAGE,VCEO··········· .
EMITTER-TD-BASE

• low leakage current
• high 200·MHz power gain

VOLTAGE,VEBO··········· .
50

COLLECTOR CURRENT. IC . . . . .
TRANSISTOR DISSIPATION. P T :
For operation with heat sink:
.
•
0
At case
{ up to 25 C ...
temperatures** above 2SoC ..
For operation at ambient
temperatures:
At ambient
UP to 25°C ...
{
temperatures
above 25°C ..

• high gain-bandwidth product

.
.

max. rnA

300
300 max. mW
Derate at 1.71 mW/DC

2N3600
• low noi se figure
NF = 4.5 dB max. at 200 MHz
• low collector-to-base time constant
rb'C c =15 ps max.
• high power gain as neutralized amplifier
Gpe = 17 dB min. at 200 MHz

.
.

TEMPERATURE RANGE:
Storage and Operating (Junction) ...

200
200 max. mW
Derate at 1.14 mW/DC
-65 to +200

COMMON-EMITTER CIRCUIT, BASE INPUT,
OUTPUT SHORT -CIRCUfTED.
FREQUENCY (n =100 MHz
COL.LECTOR-TO-EMITTER VOl.TS (VCEI-6
AMBIENT TEMPERATURE (T A ) • 2s-' C

°c

LEAD TEMPERATURE
(During Soldering):
At distances 2:. 1/16 inch from
seating surface for 60 seconds

max.. . . . . • . . . . . . . . . . . . ..
•

**

300

300 max.

°c

Limited by transistor dissipation.
Measured at center of seating surface.

o

10
IS
20
2S
30
COL.L.ECTOR MILLIAMPERES C:rcl
92CS-1284~1

Fig.l - Small-signal beta characteristic for types 2H9lB
anJ 2H3600.

18

10-66

File No. 83 - - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ 2N918, 2N3600

ELECTRICAL CHARACTERISTICS

Characteristics

Coltector-Cutoff Current

Symbols

ICBO

TEST CONDITIONS
LIMITS
DC
DC
DC
DC
DC
Ambient Frequency Collector· Collector· Emitter Collector Base
Type
Type
ta-Base ta-Emitter Current Current Current
Temperature
Unils
1N918
1N3600
Voltage Voltage
f
TA
IE
IC
VCB
VCE
IB
MHz
V
V
rnA
rnA
rnA Min. Typ. Max. Min. Typ. Max.
°C
0.01
0.01 !1A
15
15
0
150
15
0
I
1 !1A

Collector·ta-Base
Breakdown Voltage

BVCBO

15

Coliector-tD-Emitter
Sustaining Voltage

BVCEO(SUS)

15

Emitter·to· Base
Breakdown Voltage

BVEBO

15

Collector-to-Emitter
Saluration Voltage

VCE(sat)

15

10

I

0.4

Base-ta-Emitter
Saturation Voltage

VBE(sat)

15

10

I

1

Static Forward CurrentTransfer Ratio

hFE

15

Small-Signal Forward
Current-Transfer Ratio"

hfe

15

100
100
I kHz

Cob

15

O.lto 1

10
0

0
0

Ccb

15

0.1 to 1

10

0

Cib

15

0.1 to 1

rb'Cc

15

40
31.9

Small-Signal Power Gain
in Neutralized CommonEmitter Amplifier Circuit"
(See Fig.1 & Fig.3)

Gpe

15

100

11
6

6
5

Small-Signal Power Gain
in Unneutralized CommonEmitter Amplifier Circuit"
(See Fig.4)

Gpe

15

100

10

5

Power Output in CommonEmitter Oscillator Circuite (See Fig.5)

Po

15

?500

NF

15

100

6

1.5

NF

15

60

6

I

Common-Base Output
Capacitanceb
, Coltector-to-Base
Feedback Capacitanceb
Common-Base Input
Capacitancee (VEB = o.SVI
Collector-ta-Base
Time Constant"

flose Figure" (See Fig.1)
Noise Figure",d

0

0.001
3

0.01

0

0

30

30

V

15

15

V

3

3

V

I

3

10

10
6
6

4
5
1

6.

• Lead No.4 (case) grounded.
b Three-terminal measurement of the collector-la-base capacitance
with the case and emitter leads connected to the guard terminal.

I

V

10

150

8.5
40

15
100

-

pF
pF

3
I

11

4

15

ps
ps

17

14

dB
dB

15

15

'pF
pF

1.4

1

1
5

10

V

1.7

0
6
6

0.4

11

13

dB

roW

10

30

6

4.5

dB

3

dB

c Lead No.4 (case) floating.
d Generator Resistance (RgI = 400 ohms.

19

2N918, 2N3600 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _--:._ _ _ _ _ _ _ _ _ File No. 83.

1-8 pF

;5 TURNS
No. 22 WIRE

+Vcc

I"ID.! LONG
2i TURNS

\

No. 18 WIRE

+-___O.-l0l~

C7

r:------l.--;,.-?l~""O'VOUT

A,·'D.i LONG

~F·~-~_if_;~~:

0.001 f' !M.'E'/,~'l.cE

'liN 1000
pF

I.S-7.5pF -=-

"50 OHMS

,-J'IiJW'--lI--+:--'

1500
OHMS

2200

C5

~
1000
pF

-VEE

OHMS

~

1000 pf

SOURCE
IMPEDANCE
=50 OHMS

+Vcc
I.0.01I£F
92CS-ll"OR2

NOTE: (Neutralization Procedure): (a) Connect a 50-\1 rf voltmeter
to the output of a 200-MHz signal generator (Rg = 50 11), and adjust
the generator output to 5 mY. (b) Connect the generator to the input
and the rf voltmeter to the output of the amplifier, as shown above.

~) :~llfti~Eo~:U~ ;;Cfin~d (~~j'¥'Jn~~~,e~~~t~do~~u~rt':,~~~~~:
anpl ifier output, readjusting the generator output, as required, to
maintain an output of 5 mV from the amplifier. (e) Interchange the
connections to the signal generator and the rf voltmeter. (f) With
sufficient signal applied to the output terminals of the amplifier,
adjust CN for a minimum indication at the amplifier input. (g) Repeat
steps (a), (b), (c), and (d) to determine if retuning is necessary.

Q = TYpe

92CS-t2847Rt

L 1 • 3.5 turns No.16 tinned copper wire; 5/16" dia.; 7/16" long;
turns ratio::::: 4:2
L 2 • 8 turns No.16 tinned copper wire; 1/8" dia.; 7/8" long;
turns ratio::::: 8: 1
L 3 • MILLER 14303 (0.4 - 0.65 !'Ii) or equivalent

Q = Type 2N918

Fig.3. Neutralized amplilier circuit used to measure
power gain at 200 MHz lor type 2N918.

2N3600

Fig.2 - Neutralized amplilier circuit used to measure
power gain and noise ligure at 200 MHz lor type 2N3600.

+Vcc

2200

OHMS

O.05~F

INPUT ~_o f-.....--.,..H

1

1000

pF

vcc

LI

92CS-12849R2

Note 1 - Coaxial-Line output network consisting of:

2 General Radio Type 874 TEE or equivalent
1 General Radio Type 874-020 Adjustable Stub or equivalent
0.05

r

1 General Radio Type 874-LA Adjustable Line or equivalent·

~F

1 General Radio TYpe 874-WN3 Short-circuit termination or equivalent

D,C.
COMM

92CS-12846RI

Ll - 1 loop #12 AWG wire; 10 = 13/16 ,.

Note 2 • RFC = 0.2 /LH Ohmite '2-460 or equivalent
Note 3· Lead Number 4 (case) floating

L2 - 1/2 loop #12 AWG wire; 10 = 1-3/16 ..

L 1 • 2 turns 616AWG wire, 3/8 inch AD, 1·1/4 inch long

Q =2N918

Q = 2N918 or 2N3600

Fig.4 - Circuit used to measure 200.MHz unneutralized
power gain lor type 2N918.

20

Fig.S • Circuit used to measure SOO.MHz oscillator
power output lor types 2N918 and 2N3600.

File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N918. 2N3600
TWO·PORT ADMITTANCE (y) PARAMETERS AS FUNCTIONS OF
COLLECTOR CURRENT .~IC) FOR RCA TYPES 2N918 AND 2N3600
COMMON-EMITTER CIRCUIT;

COMMON-EMITTER CIRCUIT, BASE INPUT;
OUTPUT SHORT-CIRCUITED.
FREOUENCY If)· 200 MHI
AMBIENT TEMPERATURE ITAI .. 2S"c

"

INPUT SHORT-CIRCUITED.
FREQUENCY «f)· 200 MHz
AMBIENT TEMPERATURE (TA)-2S-C

'\II\~~Q\
6

~O-~

iii:-

C"{O~\.'\Ic.~'"

~I.~OV

oe

VCE=6
000

15

o

5

10

15

5
10
15
COLLECTOR MILLIAMPERES Uel

20

COLLECTOR MILLIAMPERES (Ie)
92C5-12757R2

92CS-1215BR2

Fig.6 • Input admittance (Yie)'

Fig.7. Output admittance (Y oe )'
NOTE-Vre IS NEGLIGIBLE AT THIS FREQUENCY (200 MHr

'f.
COMMON-EMITTER CIRCUIT:
INPUT SHORT - CIRCUITED.
FREQUENCY (f)· 200 MHr
AMBIENT TEMPERATURE (T4)-25'"<:
COMMON-EMITTER CIRCUIT, BASE INPUT;
OUTPUT SHORT CIRCUITED.
FREQUENCY (f )·200 MHz
..
AMBIENT TEMPERATURE (TAl" 25 C

~

COLLECTOR-TO

CO((

"'/~~~

5

~MITTER VOl-TS l\ICE.)~\

ECtOR_TO

bra

Ii VOLTS IVc ).,
6

-100

o

5

6

b.fe

~
15
COLLECTOR MILLIAMPERES Uel

20

"o

5

Fig.8. Forward transadmittance (Yfe)'

10

15

20

COLLECTOR MILLIAMPERES (lc)

92CS-12759R2

9ZCS-IZ760RZ

Fig.9 • Reverse t,ansadmittance (y reI.

TERMINAL CONNECTIONS

LEAD 1 • EMITTER
LEAD 2· BASE
LEAD 3· COLLECTOR
LEAD 4· CONNECTEO TO CASE

21

FileNo. 10

RF Power Transistors
2N1491
2N1492
2N1493

[Rl(]3LJD
Solid State
Division

RCA-2N1491. 2N1492. and 2N1493 are triple-diffused transistors of the
silicon n-p-n t;ype. These transistors are intended for a wide variety of applications in industrial and military electronic equipment. They are particularly useful in large-signal power-amplifier. video-amplifier. sud oscillator
circuits operating in the HF and VHF regions over wide ranges of ambient

VHF

Amplifier &
Oscillator

temperature.

Service
RATINGS

Maximum Ratings,

Absolute~a%imum

JEDEC
TO·39

Values:

2N1491 2N1492 2N1493

ggtt~gfg~~~~T~L.J~~AGE;

VCBO
With emitter-to-base reverse biased.. VOEV
EMiTTER-T()'BASE VOLTAGE •••••• VEBO
COLLECTOR CURRENT. • • • • • • • •• IC
EMITTER CURRENT ••••••••••••
~!I,!IT~~.?=~t~ION. See Fig.3: P T
Ambient temperature 25° C •••
Ambient temperature 1000 C • ' ••
Operation with beat eink:
Case temperature = 250 C •••••
Case temperature = 1000 C •••••
AMBIENT TEMPERATURE RANGE:
Operating and storage ••••••••••

=
=

'30

60

100

max.

30
1
500
500

60
2
500
500

100
4.5
500
500

max. V
max. V
max. mA
max. mA

0.5
0.25

0.5
0.25

0.5
0.25

max.
max.

W
W

3
1.5

3

3

1.5

1.5

max.

W
W

max.

V

• High VCB Ratings - up to 100 V
• High Transistor .Disslpation
Ratings - up to 3 watts
• High Typical fT at IC =' 25 mA up to 380 MHz
• High Typical Power Gain ot
70 MHz - up to 12 db at
500.mW output

°c

-65 to +175

• JEDEC T0-39 Package

ELECTRICAL CHARACTERISTICS, Ambient Temperoture
TEST CONDITIONS

Characteristics

Symbol

DC
Collector
Voltage
(yolts)

BVCBO

Collector Cutoff
Cmrent

DC
Collector

DC
Emitter

Current

Current

(mI.)

(mI.)

leBO

Emitter Cutoff
Cmrent

lEBO

Collector-to-Base
and Stem Capacitance

-

SmaU-Bignal CUlTent
Transfer Ratio:
at 1 KHz

"te

Power Gain at 70 MHz
Power Output (mWI
See Fig.ll
10
100
500

PG

=
=
=

Tbermal Resistance
Junction-t(M)Bae

22

RT

12

0

0

30

0
20

15

15

-15
-15
-25

Type
2N1492

Max.

30

0
VEB
0.5

20
30
50

Type
2N1491

Min.

0.1

C

LIMITS

Vce VCE
Collector Breakdown
Voltage

= 250

Min.

Type
2N1493

Max.

60

Min.

Units

Max.

volt$

100

10

10

10

lolA

100

100

100

lolA

5

5

5

pF

200

13

15

200

13
50

15

200

dB
dB
dB

10
50

50

°CIW,

5-66

File No. 10

2N1491-2N1493

DISSIPATION DERATING GRAPH

PERFORMANCE CHARACTERISTICS

...-...".,=

CS-COMMON-BASE CIRCUIT,EMmER INPUT.

eo

CE-COMMON-EMITTER CIRCUIT,BASE INPUT.
COLLECTOR-TO-EMITTER VOLTS-25
EMITTER MlLlIAMPERES--15
POWER OUTPUT (MILLIWATTS)·,O
::'ENT TEMPERATURE '8C)_25

C

., 40
I 30
i!;
~

...

ill

'"

r-;;;:::
;;;;::::

-

""

2

~

10
0
0.1

~ r-....

1\

2

. 6.,

2

..

68,

2

2

.. 68,

.. 68, 3

FREQUENCY- MHz

TEMPERATURE-·C

92CS-I0517R1

9ZCS-IOS06A2

Fig. 1

Fig. 3

TYPICAL COLLECTOR CHARACTERISTICS

TYPICAL CHARACTERISTICS

COMMON EMITTER CIRCUIT. BASE INPUT.
AMBIENT TEMPERATURE· 2S· C

COMMON-EMITTER CIRCUIT, BASE INPUT.
COLLECTOR-tO-EMITTER VOLTS=30
AMBIENT TEMPERATU~E (·C)=2~

60

ll!'"

'"~ 40

3

.
d

~

"!

ci

Sl
o

0.2

'"

i..

:l

''""

.,~

"!

.. '"
.....
:il
;.
.:,

Fig. 4

0

!l
0

>

TYPICAL DC BETA CHARACTERISTICS

or

0

N

~

~

COLLECTOR-tO-EMITTER VOLTS eYeE) -10
FREE-AIR TEMPERATURE 'lFA)· 25- c
~ 100

'.;::"

V

0

80

~

!:!

60

i

40

~

o

VII'

12U1-1.87

Fig. 2

l!
~

VV
"I

g

0.01

COLLECTOR MILLIAMPERES

1\

17

or

Z 20
o

0.8

0 ••

q2CS-l~08

0

..

0.4

BASE -TO-EMITTER VOLTS'

0.1
1.0
COLLECTOR CURRENT (lei -

10
100
MILLIAMPERES

1000

Fig. 5

23

2N1491-2N1493

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 10

TYPICAL SMALL.SIGNAL OPERATION CHARACTERISTICS
CASE TEMPERATURE (TC)-2S· C
FREQUENCY-SO

COLLECTOR-TO EMITTER VOLTS (VCE) -28
CASE TEMPERATURE (Tel· 25· c

'*'z

.,

FREQUENCY· 50 MHz

l!!...

.. 100

!I

3

i

I

~
...
is

~

'"u~

•

•
,•
1

380

l.--

•

1'0..

2

~

8

./

4

........

.......... .......... ~O
............. ~

.

360

I""::

I'-..:
~

380
---...!!tIN-BANDWIDTH PRODUCT 'T (MC)03.!2.
340
320

10

o

~

ffi

W

~

~

M

~

~

~

COLLECTOR-TO-EMITTER VOLTS (VCEI

o

~

~

w

~

~

00

FIg. 6

o

~

~

92CS-12287

FIg. 7

101520253035
COLLEClIlR-lO-llASE VOLTS (Veal
92CS-I2285RI

FIg. 8

Fig. 9

COLLECTOR CURRENT C1C)-MLUAMPERES

FREQUENCY-Me
92C$-I2288R1

92CS-I2289RI

FIg. 10

24

ro

COLLECTOR CURRENT (Ic) -MILLIAMPERES
92CS-IU86

Fig. II

00

2N1491-2N1493

File No. 10
POWER GAIN TEST CIRCUIT
OUTPUT
ILOAC-SOn)

INPUT
(SOURCE-SOA)

TI

EMITTER
SUPPLY

COLLECTOR
SUPPLY
9ZLS-1498

C 1 : 3-20 pF variable
C 2 • C6 : O.01IlF
Ca: 3-20 pF variable
C 4 : 7-100 pF variable
C 5 : 3-20 pF variable
Q: All Types
T 1: B turns No.24 wire tapped at 1 turn
T2: B turns No.24 wire tapped at 2.5 turns

Fig. 12

TERMINAL CONNECTIONS

Lead No. 1- Emitter
Lead No.2 - Base
Case, Lend No.3 - Collector

25

File No. 32

RF Power Transistors

OOClBLJO

2N2631
2N2876

Solid State
Division

RCA-2N2876 and 2N263l are triple- For Large-Signal,
diffused planar transistors of the silicon
n-p-n type. These devices are intended High-Pow
for applications in AM, FM, and CW service
er,
at frequencies up to 150 Mc.

VHF Applications in
The 2N2876 utilizes a stud-mounted
TO-60 package which is electrically isolated from all the electrodes and is de-

Military and

JEDEC TD-39

signed to provide excellent performance at

very high frequencies. The 2N2631 TO-39
package is identical to the JEDEC TO-s
package except for shorter leads (0.5 inch).

Industrial
Communications
Equipment

RF SERV ICE

JEDEC TD-60

Maximum Ratings, A.bso~ute-Maxi11/.wn. Values:

2N2876

2N263 I

OOlLECroR-"IO-BASE
\OLTAGE, Vcro. •
OOlLECIOR-"IO- EMITTER
\OLTAGE:
Wi th base open, VCEQo
With VBE = -1.5
volts, VCEVo •
EMITIER-"IO- BASE
\OLTAGE, VEOO' •
OOlLECroR OJRRENT, Ie.
TRANSISTOR DlSS!PAT](lII, Pi:
At case }up to 250 e

17.5

8.75

temperatures above 25°C

Derate

Derate

80

80

60

60

80

80

4

2.5

1. 5

max.

volts

• High Voltage Ratings:
VC80 = 80 vol ts max.
VCEO = 60 volts max.
max. volts
amp. 100 per cent tested to assure freedom from second
breakdown in class A operation at maximum ratings
max. watts

i~o:/!c Mn::/~t

• -65to+200 -65to+200
~erating (Junction) -65to+200 -65to+200
LEAD TEllPERATURE

230

°e

max.

At distances> 1/32"

from seating-surface
for 10 sec. max. •

26

230

Power Output, Unneutral i zed (POUT):
w mi n. at 50 Mc }
w mi n. at 150 Mc
2N2876
w min. at 50 Mc } 2N2631
w min. at 150 Mc

max. volts

TEMPERATURE RANGE:
Storage. • • ••

(During soldering):
At distances ~ 1/32"
from ceramic wafer
for 10 sec. max..

vol t8

• High
10
3
7.5
3

max.

RCA-2N2876 Features:
• Low Thermal Resi stance (8J-C)high-thermal-conductivity ceramic insulation between
collector and mounting stud

°e • Isolated Stud Package:
all three electrodes electrically isolated from case
-for design flexibility
heavy copper mounting stud-for effective contact
°e
with heat sink
pin terminals arranged on a .200" pin-ci rcle diameter
°e
-fit commercially available sockets

5-66

2N2631 , 2N2876

File No. 32

COLLECTOR-To-EMITTER VOLTS
92CS-IZ038

92CS-IZ039

Fig. 1 - Region of Safe Operat ion (Wi thout second
breakdown) in Class A Service for Type 2N2876.

Fig. 2 - Region of Safe Ope rat ion (lYi thout second
breakdown) in Class A Service for Type 2N2631.

ELECTRICAL CHARACTERISTICS
Case Temperature

= 25 0 C Unless Otherwise Specified
TEST COHO I T I OHS

Characteri sti c

Symbol

VCB
Co 11 ector-Cutoff Current
Collector-ta-Base
Breakdown Voltage
Collector-ta-Emitter
Breakdown Voltage (Sustaining)

ICBO

Emi tter-ta-Base Breakdown Vo I tage

BVEBO

Feedback Capac i tance
(Measured at I~ Kc)
RF Power out~ut,
(see I'ig.3 :
Measu red at 50
50
150

Unneutral ized

Base Spread i ng Res i stance
(Measured at ~O Mc)
Collector-ta-Case Capaci tance

IE

IB

0
0
-1.5
0.1

VCE(sat)

Cb'c

IC

500

2H263 I

Units

Max.

Min.

Max.

-

0.1

-

0.1

I'a

0.5

80

-

BO

-

volts

500'

60

50

-

volts

0.1

80

a

~

1.5
amp
2.5
amp

-

a

30

2H2876
Min.

0

300

-

-

I

80
~

-

volts
volts

I

volt

-

-

volt

20

-

20

pf

--

7~5b

Pout
28
28

lOa

-

--

watts
watts
watts

28

500
375
275

fr

28

250

200 (typ.)

200 (typ.)

Me

rbb'

28

250

6.0 (tyP.)

6.0 (tyP.)

ohms

gb

-

Cc

* Pulsed. Pulse duration L 5 J.Lsec; duty factor
a For PIN
2 watts.
b For PIN = 1 watt.

=

30

Me
Me
Me

Gai n-Bandwi dth Product

VBE

BVCEO(SUS)
BVCEV

Collector-ta-Emi tter
Saturation Voltage

VCE

BVCBO

Co 11 ector-ta-Emi tter
Breakdown Vol tage

LIMITS

DC
DC
DC
Collector Base
Current
Volts
Volts (Mi 11 iamperes)

£:.

6

3b

-

-

pf

I%.

27

File No. 32

2N2631.2N2876
For 50-Me Operati on

POUT
(NOTE 3)

P,N
(NOTE 2)

For 150-Me Operati on
Cl C2C3 C4 4-40 pf
C5 C6 0.0051'f
Ll 1 turn No. 16
wire, 1/4" ID x
3/16' long

CIC2C3C4 8-60 pf
C5C60.0051'f

Ll

~i~~~n3/~~' ig

x

9/16' long
L2

~e~r~ ~O (~2~%\

L2

ohms

+Vcc

HOTE I: COLLECTOR GROUNDED TO CASE IN TYPE 2N2631;
SEE TERMINAL DIAGRAM.
HOTE 2: GENERATOR IMPEDANCE = 50 OHMS.
HOTE 3: LOAD IMPEDANCE
50 OHMS.

=

~e~r~~O (~2~%\
ohms

L3 10 I'h
L4 7 turns No. 14
wire. 1/2" ID x
7/8' long
tap 2 tUrns from
ground end

L3 1. 5 I'h
L4 3 turns No. 14
wire, 3/8" ID x
3/4' long

Rl 5000 ohms

Rl 50 ohms

tap 1-1/2 turns
from ground end

Fig.3-Circuit of Unneutralized Amplifier Used to Measure Power Output of Types 2N2876 and 2N2631.

TYPICAL OPERATION CHARACTERISTICS FOR TYPE 2N2876
COMMON EMITTER CIRCUIT, BASE INPUT.

COMMON-EMITTER CIRCUIT, BASE INPUT.

g~~~EfJ~~E~Tt~~ri~)~~k!~ {Vce)-28

g~~~Ei:~~EJ2Tj~~~~~~~goLbs

.,

(VCEl"40

10

...

i
!!;

10

00

5
50

o

0.5
I
US
RF POWER INPUT

o
10

lao

lao

..
a:

o

0.5
I
1.5
RF POWER INPUT IPIN)-WATTS

0.5
I
loS
RF POWER INPUT IPIN)-WATTS

92CS-12048

92CS-12049

Fig.8

Fig. 10
COMMON-EMITTER CIRCUIT, BASE INPUT.

COMMON-EMITTER CIRCUIT, BASE INPUT.
COLLECTOR-TO-EMITTER VOLTS tVCE)a28
FREE-AIR TEMPERATURE ITFA)=25· C

....

10
9

;0

I
56
7

~
:>

4

~
a: 3

...

.

r-

I

a:
30

--

"

40

50

I'

......

r-

;0

f

....

'1,.. "b

........,~~'1/~
"'v (I}.
......... 1""'-- ...... ;-.!
"
i'- ......"'~Ij..q,."
i'-~~
.........
-~s

!;; •

..e:

~~~~:~T~RTET~pi~!1J,~~ ~~~~~=~~,,~=40
I
'1'!'
I
I

"

~

f---

I

r-

..
~

5

0

4

~

60 70 BO 90 100
FREQUENCY-Me

3
2

;0

f--150

200

a:

,~
,~

...

....

, ......
. . . (1}, ~.q,.,..s
I'

0

a:

Q

"

"t

g
:>

~

-r-.

"b1j.~'1 J I
-...... -...... :--,:",,,-,,V)

IC

I

I

I

30

40

50~

60 10 80 90 100
FREQUENCY-Me

92CS-12046

150

200

92CS-12047

Fig. it

Fig.9

TERMINAL DIAGRAMS
(Bottom View)

EMITTER

2N2876

2N2631

BASE

BASE

COLLECTOR

EM I TTER

COLLECTOR
( CONNECT~D
TO CASE)

29

File No. 61

RF Power Transistors

OOOBLJD

Solid State
Division

2N2857

RCA-2N2857 is a double-diffused
epitaxial planar transistor of the silicon
n-p-n type.
It is extremely useful in
low-naise-amplifier, oscillator, and converter applications at frequencies up to
500 MHz in the common-emitter configuration,
and up to 1200 MHz in the common-base
configuration.

SILICON N-P-N
EPITAXIAL PLANAR
TRANSISTOR

The 2N2857 utilizes a hermetically
sealed four-lead JEDEC TO-72 package. All
active elements of the transistor are insu1 ated from the case, which may be grounded
by means of the fourth lead in applications
requiring shielding of the device.

For UHF Applications
in Industrial and Military Equipment

Maximum Ratings, Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE, VCBO.. 30 max.
COLLEcrOR-TO-EMITTER VOLTAGE, VCEO 15 max.
EMITTER-TO-BASE VOLTAGE, VEBO • . . 2.5 max.
COLLECTOR CURRENT, IC. • . • . . . 40 max.
TRANSISTOR DISSIPATION 6 PT:

:~rc:t~er;:W- {~bo~~ ~~o ~:

FEATURES
V
V
V

mA

. De~a~e 3~~ ~~~2 mW/~~

At ambi en t
{UP to 25°C .
temperatures above 25° C.

TEMPERATURE RANGE:

LE~~oTE~PERiT3nEr(~~~n<;usnocltJ:rni)ng )~5

to +200

At di stances ~ 1/32 inch from
seating surface for 10
seconds max. • . • . .
. • 265 max.

*

JEDEC
TO-72

0c

°c

Measured at center of seating surface.

• high gain-bandwidth product-fT = 1000 MHz min.
• high converter (~50-to-30 MHz) gain-Gc = 15 dB typo for circuit bandwidth of
approximately 2 MHz
• high power gain as neutral ized ampl ifier-Gpe = 12.5 dB min. at~50 MHz for circuit
bandwidth of 20 MHz
• high power output as uhf osci llator-p

130 mW min., ~O mW typo at 500 MHz
0=120 mW typ., at I GHz

• low device noise figure-NF

J~.5

dB max. as ~50 MHz ampl ifier
h.5 dB typo as ~50-to-30 MHz converter

• low collector-to-base time constant-rb'Cc = 7 ps typo
LI

~1(N(2at
sao
c, 0:RG=50n

=-

=-

50°1
Q = 2N2857

• low coli ector-to-base feedback capac i tanceCcb = 0.6 pF typo

6800

(IDOO

+1

l

RESISTAIIC[ VALUES I"OHMS.
CAPACIlAIlCE VALUES III pF.

VEE =7.5V

92CS-14112

(D) INTERCHANGE THE CONNECTIONS TO THE SIGNAL
GENERATOR AND THE RF-VOLTMETER.
(E) WITH SUFFICIENT SIGNAL APPLIED TO WE OUTPUT TERMINALS OF
THE AMPLIFIER, ADJUST C2 FOR A MINIMUM INDICATION
AT TIlE INPUT.
(F) REPEAT STEPS (A), (B), AND (C)
TO DETERMINE I F RETUNING I S NECESSARY.
NOTE 2: L~ & L2 - SILVER-PLATED BRASS ROD, 1-1/2"
LONG x 1/4" DIA.
INSTALL AT LEAST 1/2" FROM
NEAREST VERTICAL CHASSIS SURFACE.
NOTE 3: EXTERNAL INTERLEAD SHIELD TO ISOLATE TIlE
COLLECTOR LEAD mOM THE EMITTER AND BASE LEADS.

Fig.1 - Neutral ized ampl ifier circuit used to
measu re ~50 MHz powe r ga i n and no i se f i gu re
for type 2N2857.

30

9-66

File No. 61 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

ELECTRICAL CHARACTERISTICS, At

an Ambient Temperature, TA

= 2:1'

C, Unless Otherwise Specified

TEST CONDITIONS
Characteristic

Collector-Cutoff
Current
Collector-to-Base
Breakdown Vol tage
Co 11 ector-te-Em i tter
Breakdown Voltage
Emitter-te-Base
Breakdown Vol tage
Static ForwardCurrent Transfer
Ratio

r.~~!~~i ¥~~:f~r;'ardRatio
Collector-to-Base
Feedback Capac i tance
Input Capac i tance
Collector-te-Base
Time Constant

tnl;~ip~~ ~:"~~

Neutral ifed Am~l i fier
Circuit See Flg.1
Powe~ ?rtput as ~sCi 11ator See Fi Q. 2
UHF Device Noise Figure
UHF Measured Noi se
Fi Qure
VHF Device Noi se Fi gure

2N2857

LIMITS

DC
DC
DC
DC
DC
DC
Coli ector- Coli ector- Emi tterCollecSymbol Frequency te-Base to-Emitter to-Base Emi tter Base
tor
Units
2J~~7
Current
Current
Voltage
Voltage Voltage
Current
IB
VCB
IE
IC
VEB
VCE
f
mA
mA
Min. Typ. Max.
MHz
V
mA
V
V
15
10
0
nA
ICBO
:1~8~g
15
1.0 p.A
0
0
0.001 30
BVCBO
V

f:

0

BVCEO
-0.01

BVEBO
hFE
hfe

O.OOlg
100

0.1 to Ib
0.1 to Id
31.9 c
rb'Cc
Ccb

Po

30

-

150

6
6

2
5

50
10

--

220
19

-

0.6

1.0

0

-

I.~

-

pF

7

15

ps

0
0.5

6

-2

~oc,d,

NF
NF

~

1.5

6

~500a

NF

-12

10
f

V

3

10

~Oc

V

I

Cib

~e

3
0

- - 15
- 2.5 - -

6

1.5

~50c,d

6

1.5

60b,d

6

I

- 19
30
- - 3.8
- - 5.0
- 2.2 -

12.5

~.5

pF

dB
mW
dB
dB
d8

a Fourth lead (case) not connected
b Three-terminal measurement: Lead No.1 (Emitter) and lead No.4 (Case) connected to guard terminal.
C Fourth lead (case) grounded.

d Generator resistance, Rg :;: 50 ohms.
e Generator resistance, Rg:;: 400 ohms.
f Device noise figure is approximately 0.5 dB lower than the measured noise figure.
The difference is due to the insertion loss at the inputof the test circuit (0. 25 dB) and the
contribution of the following stages in the test set-up (0.25 dB).

50

n

W POWER

METER

CAPACITANCE VALUES 1M pF.

Fig.2-0scillator circuit used to measure 5OO-MHz
power output for type 2N2857.

92C5-14111

Q ~ 2N2857

31

File No. 61

2N2857
-EMITTER CIRCUIT. BASE INpUT.
ORT~CIRCUITED

Y(f}-IOOMHz
TEMPERATURE (TA)-25°C
COLLECTOR-lO-EMITTER VOLTS CVc~El·6

o

10
15
20
25
30
COLLECTOR MILLIAMPERES (Iel

-100

35

-50

0

~o

100

TEMPERATURE -

150

Coc

200
92CS-'2483RI

92CS-14f69

Fi g. 3 - Small-s i gna I ·beta characte ri st i c
for type 2"2857.

COLLECTOR MILLIAMPERES

FI g. '1- Rati ng chart for type 2"2857.

4

tIc)

12

COLLECTOR MILLIAMPERES (Iel

Fig.5 - Input admittance (Yie)!'CS-I2'50R'

Fig.6 - Output admittance (Y oe )."CS-12148R'

COLLECTOR MILLIAMPERES (Ie)
92CS-12f49RI

Fig.7- Forward transadmittance (Yfe).

32

92CS-IZ154R2

Fig.8 -·Reverse transadmlttance (Y re ).

File No. 61

2N2857

CO~~¥~UfMfHb~~:t~~~~Tt~~.SE INPUT;

22

CO~~8~T!m:ic17~E~~CUIl;

INPUT

20 ~g~t~~~~:-M~~~;~~;REERS ~;~~ ~~CE1:1--I-+-H-Hf-H g

COLLECTOR-TO-EMITTER VOLTS (VeE)-6

COLLECTOR MILLIAMPERES (Ie) -1.5
AMBIENT TEMPERATURE(TA)· 25°C

2'

~18 AMBIENT TEMPERATURE (TAl'" 2:i·C

:::Ii

:::E

~

3161---1-+-1-++1+1+---+----+-1-1++++1 :;

:;

'" 20

I

~:::i 16

r

!11

~lol---I~+-I--I--HI-+lI+---+--I-lH+-HI'l-I

~i

i;;:i

e~

=>-

12

~~
....

~~ 4

10

b,.
.g;r

V

~4

/

..

§~

6 8 100
FREQUENCY (f) -

e

~8.~--l~+-+++HHH---+--+-lH+l+~2 ~
~6
L5 8
iil
..

u;! 8
=>'"
..
u

1tl

eI21---+-+-++-:+H-+--+---1I-H+++~

2

~

100,
FREQUENCY (f):"'-MHz

10

MHr

"boa:/" goe

____

92CS-12157RI

1

,

.

I

~

0

1000

92CS-12156R2

Fig.IO - Output admittance (Y oe ).

Fig.9 - Input admittance (Yie).

COMMON EMITTER CIRCUIT; INPUT SHORT CIRCUITED,
COLLECTOR-TO-EMITTER VOLTS IVCEI=6
COLLECTOR MILLIAMPERES (IC)=1.5
AMBIENT TEMPERATURE ITAI- 25 0 c

l~

LIre

-"
"';!!
u-'

0

f!:e
gl

-I

"

~e

"''''

II
gr~

..........

z-'

g.e

II

-2

",u
,,-z

~~

o:W -3

~~

15",

Gjo-4

'"
10
9ZCS-12152RI

2

• ,

.

100

FREQUENCY (fl- MHz

2

.,•

1000

92CS-12151R3

Fig.12 - Reverse transadmittance (Y re ).

Fig.11 - Forward transadmittance (Yfe).

TERMINAL DIAGRAM
Bottom View

LEAD 1- EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR
LEAD ij - CONNECTED
TO CASE

33

FileNo. 42

RF Power Transistors

DClOBLJO
Solid State
Division

2N3118

RCA-2N3118 is a triple-diffused planar
transistor of the silicon n-p-n type intended for use in RF amplifiers in military
and industrial HF and VHF communication
equipment. It is designed especially for
large-signal Class-C and small-signal
Class-A service.
Maximum Ratings, Absolute-Maximum Values:
Collector-to-Emitter Voltage:
Reverse bias (VeEX)
For VBE = -1.5 volts _ ... _ ....... 85 max.
With base open (VCEO) ............ 60 max.
Emitter-to-Base Voltage (V EBO ) . . . . ... 4 max.
Collector Current (Ie) ............. 0.5 max.
Transistor Oissipation (I'-r):
At case temperatures
up to 250 C ...................• 4 max.
At free-air temperatures
up to 25 0 C .................... 1 max.

Collector-Cutoff
Current
Emi tter-to-Base
Breakdown Vol tage
Col1ector-to-Emi tter
Breakdown Voltage
(Sustaining)
Reverse Collector-toEmitter Breakdown
Vol tage
Feedback Capaci tance
rbb' Cb' c Product
OC Forward-Current
Transfer RatieD

~~~;~~i'~:!sf~~wR~~io
~~!ur~r~n~~tS~:~dance
~i~!ur~(iu ;n~ ;~:~dance

Symbols

watts
watt

• High power dissipation'I watts at case temperatu re of 250 C
• High output powerClass-C service; 28-volt operation:
JEDEC TO-5
I watt minimum at 50 Me; 0.11 watt minimum at 150 Me
• High collector-to-emitter voltage ratingsVCEX = 85 vol to; VCEO = 60 volts
• High gain-bandwidth product380 Me typical
• High power gain-Class-A service, neutralized:
25 db at 50 Me, 200 ... output

ELECTRICAL CHARACTERISTICS
TEST CONDITIONS
LIMITS
DC
DC
DC
DC
DC
DC
Case
eonectorEmitter- eonector Emitter Base
Col1ectorTempera- FreUnits
ture quency to-Base to-Emitter to-Base Current Current Current
rOltag~ r°1tag~
(TC)
volts
volts r°1tag~
(mal
(mal
(mal Min. Nax.
volts
°c
Me
IE
IC
Ia
VCB
VEB
VCE

Iero

1~~m:~

BVEOO

25

0

BVCFD(sus)

25

pu:~ .P

BVCEX

25

Cb' c
rbb' Cb f c

25
25

hFE

25

30
30

0
0

•

1.5
1
50

28

0

0.1

volts

60

volts

85

28

25

50
5

50

28

25

25

50

28

25

vY22(reaI)

25

50

28

25

POUT

25
25

l~gl

28
28

PG

25

50*

28

°Pulse duration, 300 J-Lsec; duty factor, less than: 1. 8%

25

275

75

ohms

500 1000

ohms

1.0
0.4

watt
watt

18

db

25
.. See fig.5

volts

pr
6
60 .psec

28

25

1'.

I'a

4

0
25

hr.

.. TFA = free-air temperature

0.1
100

0.1

hie(real)

Output Power
Class-C Service
Pin = 0.1 watt
(with heat sink)
Power Gain
Class .. A Service
Pout = 0.2 watt
(W1 th hea t sink)

34

VHF Class-A Amplifier
Service

volts
volts
volts
ampere

At temperatures above 250 C ............... See Fig. 1
Temperature Range:
°c
Storage ...................... -65 to +200
Operating (Junction) ........... -65 to +200
°e

Characteri sties

For Large-Signal VHF
Class-C and Small-Signal

~'See fig.3

* See fig .13
5-66

2N3118

FileNo. 42
RATING CHART

TEMPERATURE--c
92CS-12281

Flg.1

TYPICAL LARGE-SIGNAL OPERATION, CLASS-C SERVICE, ISO MC

Cl,C2: 1.5-20 pf
C3: 4-40 pf
. C4: 7-100 pf
C5: 1800 pf
C6: 0.01 ILf
RF POWER INPUT CPIN)-MILLIWATTS

Flg.2

92CS-I2273

Ll : O.l!'h, & turns, NO.18 wire,
1/4" I D, closely wound
L2: 750-ohm ferrl te choke
L3:

~i~:'51t'~ j/J~r~~ngNO.16 wire,

L4: 0.055 ~h, 3 turns, No.16 wire,
R: 100 ohms, variable
1/4" ID x 1/4" long
Flg.3

TYPICAL LARGE-SIGNAL OPERATION, CLASS-C' SERVICE, SO MC

COLLECTOR
SUPPLY

Vee
L1: 0.1)!'h, 4 turns, NO.18 wire,
1/4" ID, closely wound
L2: 2.4 !'h, choke,
Miller Part NO.4606
0.6,u.h, 10 turns, NO.1S wi reo
L': .3/8" :0, closely wound
L 4 : 0.6 p.h, 10 turns, NO.1S wire,
~/8' I D, closely wound
R: 1000 ohms, variable

C1: 70-350 pf
C2. C4, C5: 7-100 pf
C~: 0.01 ILf
C5: 0.002 ILf
C7: 0.02 ILf
RF POWER INPUT (PIN)-MILLIWATTS

Flg.4

92CS-12272

Flg.s

35

File No. 42

2N3118
TYPICAL SMALL·SIGNAL OPERATION CHARACTERISTICS
TOR-TO-EMITTER VOLTS (VeE)-28

CASE TEMPERATURE (Tc)a2~· C

E TEMPERATURE ITel • 25· C

FREQUENCY .. SO Me

FREQUENCY·50Mc

m
.. 100
II

•

•,
•

3

;;

I

u

5

.!:!

f

./

3&0

,

z

!

2

~

g

........

~

4

~

1'0.

"-

1"-...
.......

~

320

........ ........ .......
............. . ~

,

ig

360

V

380

I,

~'N-BANDW'DTH PRODUCT 'T (Mcl~

340
320

z

io!

I
~

ffi

W

~

~

"

~

~

~

92CS-122B6

Flg.6

10
15
20
25
30
COLL£C1t)R-lO--eASE VOLTS (Vea)

••

Flg.8

36

10

~

~

~

~

m

~

00

(re l-MIWAMPERES

Fig.7

~

00

92CS-I2287

COLLECTOR CURRENT (Xc'-MILLIAMPERES
92CS-12283AI

Flg.9

92CS-l2284

FREQUENCY-Me

COLLECTOR CURRENT (IC)-MlLUAMPERES

Fig.l0

0

COLLECTOR CURRENT

COLLECTOR-TO-EMITTER VOLTS (,VeE)

92CS-t2289RI

Flg.lI

92CS-I2288R1

File No. 42

2N3118
TYPICAL CLASS·A·SERVICE·OPERATION. 50 MC, NEUTRALIZED

COMMON-EMITTER CIRCUIT, BASE INPUT,

CLASS-A SERVICE. 50 Me
COLLECTOR-YO-EMITTER VOLTS (VCEI.29

COLLECTOR MILLIAMPERES (10.25
CASE TEMPERATURE (TC)·25· C

1!!Q.5

~

1M

.

.

"§

g0.3
~

~ 0.2

o

...'"
f

C1: 7-100 pf
C2: 8-60 pf
C3: 111-150 pf
C&: 6-80 pf
C5,C6: 0.005 ILf
C7: 0.9-7 pf

0.1

~

'"

I

2

RF POWER INPUT

'PIN) -

3
MILLIWATTS
92~S-1227B

~:;,{~.
~t\OR
v[£
Yee _ '~~S-IZ2!O
L1: 0.12 ILh, 3 turns. NO.16 wire,
7/16" 10 x 1/&" long.
tap at 1 turn from ground
L2: 0.23 ILh. 5 turns, NO.16 wire.
7/16" 10 x 1/2" long,
tap at 3 turns from collector

termi nal

Flg.12

Flg.13
COMMON-£MITTER CIRCUIT. BASE INPUT.
CLASS-A SERVICE. ~ lie
OUTPUT POWER MILLIWATTS-200
CASE TEMPERATURE (TC)-25'" C

2.

o

~ 20

/ill

I

(v.

g IS

•

z

3

10

i
o

~

~

~

~

~

ro

~

~

00

COLLECTOR CURRENT tIC)-MJUIAMPERf:S
POWER OUTPUT (POUT)-MILLIWATTS

Flg.l~

92CS-I2278
92CS-12277

Flg.1S

TERMINAL DIAGRAM

LEAD 1- EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR.
CASE

37

File No. 44

llCI8LJD

RF Power Transistors

Solid State
Division

2N3119

High-Power Silicon N-P-N
Planar Transistor
For Switching and Pulse-Amplifier Applications
Features:
• High voltage ratings:
VCEX = 100 V, VCEO = 80 V
• Fast rise time:
10 ns with 50-V pulse, l-Kn load
JEDECT()'S

• High power dissipation:
4WatTC=25° C

RCA-2N3119 is a triple-diffused planar transistor ofthe silicon
n·p-n type intended for high·voltage high-frequency pulse

amplifiers and high-voltage saturated switches in military and
industrial equipment.

MAXIMUM RATINGS, Absolute-Maximum Values:
·COLLECTOR-TO·BASE VOLTAGE ...............•........................
COLLECTOR·TO·EMITTER VOLTAGE:
• With base open .....•.........................••.......................
With base-emitter junction reverse·
biased (vBE = -1.5 V} ...........•..........•...........•............
"EMITTER·TO-BASE VOLTAGE .........................................•.
'COLLECTOR CURRENT:
Continuous .....•...............••...•..•...............•............
'TRANSISTOR DISSIPATION:
At case temperatures up to 25° C ...........•..............................
At free-air temperatures up to 25° C ................................••... '.'
At temperatures above 25° C
'TEMPERATURE RANGE:
Storage & Operating (Junction) ..•...................•.....•.........•....
'LEAD TEMPERATURE (During soldering):
At 1/16 in. ± 1/32 in. (1.59 mm ± 0.8 mm) from seating
plane for lOs max. . .......••...•.............................•......

VCBO

100

V

VCEO

80

V

VCEX
VEBO
IC

100

4

V
V

0.5

A

4

W
W

PT

See Fig. 1
-65 to +200 °c

255

°c

-In Bccordance with JEDEC registration data format

38

8-72

File No. 44

2N3119

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl

= 25° C unless otherwise specified.
TEST CONDITIONS

CHARACTERISTIC

SYMBOL

DC
COLLECTOR
VOLTS
V CB

*

Collector-Cuto11 Current
At TFA ~ 25° C

*

Reverse Collector Current

*
*

Emitter-Cutoff Current (At T FA = 25° C) lEBO

V CE

V Be

IE

.IC

-

-1.5

60

ICEV

-3

0

IB

*

Collector-ta-Emitter Breakdown
Voltage (Sustaining)

BVCEO(sus)

*

Reverse Collector-ta-Emitter
Breakdown Voltage

BV cex

*
*

Collector-ta-Base Breakdown Voltage

BV CBO

0

Emitter-to-Base Breakdown Voltage

BV EBO

0.10

DC Forward-Current Transfer Ratio

hFE

-1.5

60

0
-1.5

10
10'
10'

nA

50
50

~A

0.2

~A

100

nA

0.2

~A

10·

80

-

V

0.10

100
100

-

V

0.10

V
V

0

4

10
100
250

40
50
20

200

-

Collector-ta-Emitter Saturation
Voltage

VCE(sat)

10

100

-

0.5

V

Base-ta-Emitter Saturation Voltage

VBE(sat)

10

100

-

1.1

V

100

-

1.1

0

-

Base-ta-Emitter Voltage (Pulsed)

V BE

Feedback Capacitance (At 1 Mel

c,,'e

28

Cob

28

*

Common-Base Output Capacitance

*

Gain-Bandwidth Product (At 50 Mel

·

IB

UNITS

MIN. MAX.

0
0

Base Current

·
·
·
·

LIMITS

DC
CURRENT
(MILLIAMPERES)

60
60

ICBO

150(1 C

=

DC
EMITTER
VOLTS

(at 1 mC)

10'

-

0
28

IT

V
pF

6
6

pF

-

Me

-

20

ns

100

-

40

ns

100

-

700

ns

-

44

25

250

10

Pulse-Amplifier Delay + Rise Time
(See Figs. 9 & 10)

td +tr

VCC ~ 80

Sat. Switch Turn-On Time
(delay time + rise time)
(See Figs. 7 & 81

ton

VCC ~ 2B

IBl

Sat. Switch Turn-Off Time
(storage time + fall time)
(See Figs. 7 & 8)

toft

Vce ~ 2B

IB2~

Thermal Resistance:
(Junction-to-Casel

=10
-10

ROJC

°C/W

In accordtmce With JEDEC registration data format
·Pulsed; pulse duration = 300 j.lsec; duty factor = 1.B%
CASE TEMPERATURE !Tel
AMBIENT TEM~TURE !TAl.

ma

COLLECTOR -TO- EM ITTER VOLTAGE
CASE TEMPERATURE ITC)' 25° C
FREQUENCY (f) = 50 MHz

•

•

•

50
150
TEMPERATuRE-oe

Fig. 1-Rating chart

V

~3

"

>-

~

20

:;

.,~
"

10

10

a

IVCE1~ 28

200
92CS-12281RI

m

m

c

m

ro

ro

M

M

100

COLLECTOR CURRENT (Ie)- rnA

Fig. 2- Typical gain-bandwidth product characteristic

39

'File No. 44

2N3119

~ 100

<5

~

V-

..

a
i= 80

,
"

!

~
~

31
Il
g

•

60

./

•

l-

z
~

"Y

•

1l

1/1/

2

~

1'-..

"

""-

8
10

0.1

100
MILLIAMPERES

1.0

10

COLLECTOR CURRENT IIel -

o

1000

-

......

I<

I"

20

0
0.01

380

10

15

::::.

...........

;--.....

I..-

4

I<

I<

.......
....... ....... ~o

7

6

!:!

40

-

100
E
9



Hi

.

"-

r--.... t'-

0

ffi

1~

..

~

·f

12

t·

•

'"

O"'e
;:i'
~f!.!!!.PlJr flO,)r--,1'-

.
•

~~rr.s

"-

.. 2

~

'1M0.5

-w
I

0
30

1.5

RF POWER INPUT (Pj)-WATTS

40

50

60

70

80 90 100

FREQUENCY-Me

92CS-12424

r-I--Qs r------

rr

II

'50

200

92CS-12427

Flg.3

Fig.4

TERMINAL DIAGRAM
BASE

~m" ~

44

!

~
~I> ;--t--..~"l'l'

t-...

~IO
!;

'0

?.,

.~

.........

0-

00""'0>

File No. 56

RF Power Transistors

OOCrBLJD
Solid State
Division

2N3262

RC'A-2N3262 is a triple-diffused planar transistor of the silicon n-p-n type intended for highvoltage, highCfrequency pulse amplifiers and highvoltage saturated switches in military and
industrial equipment. The high-current switching
capability of the 2N3262 makes it especially
suitable for memory-core driver applications.
The 2N3262 utilizes the JEDEC 10-39 package
which is identical to the JEDEC 10-5 package
except its leads have a minimum length of 0.5".

For High-Voltage,
High-Speed
Switching and
Pulse-Amplifier Applications

o High Voltage Ratings -

• High Power 0 i ss i pat i on -

o Fast Rise Time at High Col lector Currents20 nsec rise time (max.) at I ampere

• Low Collector to Emitter Saturation Voltage at
High Collector Currents0.6 vol ts (max.) at I ampere

JEDEC TO-39

Maximum Ratings, Abso~ute-Maximum Va~ues:

100 max. volts
Collector-to-Base Voltage, VCBO
Collector-to-Emitter Voltage
Reverse bias, VCEX
100 max. volts
For VEB = 1.5 volts. 0" "
With base open (sustaining
80 max. volts
voltage), VCEO(sus) " " "
Emitter-to-Base Voltage, VEBO
4 max. volts
1. 5 max. amperes
Collector Current, IC "
Transistor Dissipation,
At case temperatures
• • • • • 8.75 max. watts
up to 25 0 C " " " "
At case temperatures
above 250 C " " ••
Derate linearly (50 mw/oC)
to 175 0 C
At free-air temperatures
up to 25 0 C • • • • • • • • • ••
1 max.
watt
At free-air temperatures
above 25 0 C • • • • • Derate linearly (5.71 mw/oC)
to 175 0 C
Temperature Range:
Storage. " • • •
-65to+200
Operating (Junction).
-65to+200
Lead Temperature:
1/16" ± 1/32" from seating
surface for 10 sec. max ••
230

Pr:

5·66

45

File No. 56

2N3262

25° 0 Un~ess Otherwise Specified

Electrical Characteristics, Oase Temperature

TEST COIIDITIOIIS
Symbol

Characteristic

DC
DC
Collector Emitter
Volts
Volts
VCE

Vca
Collector-Cotoff Corrent at TFA = 250 C

Iem

Emitter ...Cutoff Current

IEII)

Collector-to-F.mitter Sustaining Volta~ with
External Base-to-Emitter Resistance -(19:)

= 10 ohms
Collector ... to-Emitter Sustaining Voltage

IE

VEa

30

la

Min. Max.

IC

0
3

Units

0

0.1

1'8

100

p.a

VCER(susl

500'

90

volts

VCEQ(susl

o 500'

80

volts

0.25 100

volts

IReverse Collector ... to .. F.mit~er Breakdown Voltage

BVCEJ(

Emitter-to-Base Breakdown Voltage

BVEII)

Base .. to-Emitter Saturation Voltage

VIlE(satl

Collector-to-Emitter Saturation Voltage

VCE(satl

1.5
0.1

~b

Feedback Capaci tance (at 1 Mcl

Cli'c

volts

1.4 volts

3
28

tr

Vcc=80

Sat. Switch Turn-Q. TimeDelay Time + llise Time (See Figs. 8 & 10)

ton

28

I~rlF

Sat. Switch Turn-Off TimeStorage + Fall Time (See Figs. 8&10)

toff

28

IBl=I82
= 100

Forward Current Transfer Ratio (at SO Me)

hCe

28

40

0

300

0

20

pC

25

20

osec

1000

40

osee

750

osee

100

pC

3

= 0.15"_

IS #L8ec; duty factor

TYPICAL TRANSFER CHARACTERISTICS

0.6 volts

500

Pulse-Amplifier llise Time (See Figs. 13 & 14)

=

4

100 1000
4

Input Capacitance (at 1· Mcl

• Pulsed; pulse durahon

0
100 1000

hFE

IX: Forward Current Transfer Ratio

LIMITS

DC
Current
(Mi 11 iamperes)

TYPICAL OPERATION CHARACTERISTICS
COMMON-EMITTER CIRCUIT, BASE INPUT.

I I I I III
,.~~.,lI I II.Lb\.~~~
~.
I l.:\~~~"
~~\

24

I
I-

200

160

~~

t

.~~
..
~

2
g

-~Q'
-~c.~

120

~\.;r

2f)0 C

~

"/

SO

~ ;;;fi$

~

""C'

40
0
10

'~
~.<'lC'.

2

,

4

. ..

I
2

100
COLLECTOR MJLLlAMPERES (Ie)

4

789
1000
92CS-12«10

Flg.l

46

92CS-IMM

Fig. 2

.

File No. 56

2N3262

TYPICAL TRANSFER CHARACTERISTICS

TYPICAL OPERATION CHARACTERISTICS

I

COLLECTOR MILLIAMPERES lIe)
'!I2CS-12456

Flg.3

Fig.4
FREQUENCy-t Me

COMMON-EMITTER CIRCUIT, BASE INPUT. FREE-AIR TEMPERATURE (TFA) .. 2 SQ C

600

CASE TEMPERATURE ITC1"25°C

o

~50

~
~

0

"

50

400

~

:;

,. 300
...J

l5
~

200

o
o

100

0.2

0.4
0.6
BASE-IO-EMITTER VOLTS (VSEI

10
15
20
25
30
COLLECTOR-IO-BASE VOLTS (Veal

0.8

Fig.S

35

Fig.6

TYPICAL SATURATED·SWITCHING CHARACTERISTICS AND TEST CIRCUIT
CIRCUIT USED TO MEASURE 'onAND 'off FOR
OPERATION AS A SATURATED SWITCH

COMMON EMITTER CIRCUIT I BASE INPUT.
COLLECTOR MILLIAMPERES (IC):IOOO,OR 500

FREE

~

AIR TEMPERATURE (TFA):25° C

RI~:~~C~~~~E

RISE TIME (f r )
DELAY TIME (td)

50

GENERATOR

\le •

~o

OUTPUT TO
OSCILLOSCOPE

OHMSI

"

OHMS 21
OHMS

LLI

HE

2

Ie
000

a
50
roo
150
TURN-ON BASE MILliAMPERES (ISII

Fig.7

200

INPUT PULSE:
t r < 3 n sec
tf

< 10

nsec

120 CPS
REP. RATE
PULSE WI OTH = 300 !,sec

Fig. B

47

File No. 56

2N3262
TYPICAL SATURATED·SWITCHING CHARACTERISTICS AND TEST CIRCUIT

WAVE FORMS FOR SATURATED SWITCH CIRCUIT

F=====,>\ON

IS

I OUTPUT WAVE FORM
I
I

I.
50
100
150
TURN-OFF BASE MILLIAMPERES I.SI· .IS2

I

LrJ~
~~

I
I

TIME

=ar------L--.---------~~--~+-------+·

1 INPUT WAVE FORM

200
92CS-IZ460

92CS-12459

Fig.9

ISl
100 ma
IS2 =-100 ma
I C = 1 amp

I

ton
toff

&0

nsec

750 nsec

Fig.IO

COLLECTOR MILLIAMPERES (Icl
92CS-12461

Fig.ll

PULSE·AMPLIFIER TEST CIRCUIT
OUTPUT TO

92CS-I2451

Fig.12

WAVE FORM FOR PULSE·AMPLIFIER TEST CIRCUIT
70V

OSCILLOSCOPE

20V

R.

100
OHMS

R,
•0

OHMS

R•
100

O--L----------------

OHMS

92C5--12462

Flg.14

Vee -+BOV

-VEE
(NOTE I)

TERMINAL DIAGRAM

9

f---

20
~

~o

t- ~

101--

t- ~ ~..:~.o

8

I/FltvPIJ

"

r

4

"'4 rr

-...;;

o?~

:s:.:

I·S

~PIE);o'"i?r

~

0

...
0:

2

10

. " -...
a?

~ 4

t-..
t-..

1""I/F;;;;-

......

--

t--

-r-!:T iV4TT,t-(p

t-- r- !-i:.o
r-t-~

-r--!f~.s 1-.. ......

i.

t-r-

~

il

...0:

~

~ joE.
l"- t-

5

2

I

I

50

8_

COLLECTOR SUPPLY VOLTS Wcel "26
CASE TEMPERATURE (TCI" 25" C

40

60

80

100

200

300

100

200
FREQUENCY til-MHz

FREQUENCY (11- MHz

300

400
92CS-12571RI

'32CS-1282'3RI

Fig.1 • Power output vs frequency for 2N3632 & 40665

50

Fig.2 • Power output vs frequency for 2N3375 & 40666

File No. 386

2N3375,2N3553,2N3632,40665,40666
COLLECTOR SUPPLY VOLTS tVeel = 28
CASE TEMPERATURE ITel. 25° C

COLLECTOR SUPPLY VOLTS (Vee) $28

10

CASE TEMPERATURE

t Tc)" 25°

C

700

"'"I

600

~

500

t;

I

f--....

V

400

~

~

'"
b

~

300

J,
~
75

50

100

200

150

200

250 300 350 400

o

50

FREQUENCY (tl-MHz

I

%1000

"I

-

£500

g

~400

900

700

~

0

r.......

300

COLLECTOR SUPPLY VOLTS (Vee). 28
CASE TEMPERATURE (Tel. 2S·C

800
-Jl;

~

250

Fig.4 • Gain.bandwidth product vs collector current for
types 2N3632 & 40665

;600

I

200

150

92CS-1283QRI

Fig.3 • Power output vs frequency for type 2N3553

COLLECTOR SUPPLY VOLTS tV ee '· 28
CASE TEMPERATURE ITcl = 25° C

100

COLLECTOR MILLIAMPERES Itcl

92C5-22858

:::
...'"

'-

600

0

500

i0

z

..

1300

~

~

-

'-........

400

z

~

./"""

7

~
300
20

200
50

100

150

200

300

250

COLLECTOR MILLIAMPERES tIel

Fig.5 • Gain.bandwidth product vs collector current for
types 2N3375 & 40666
COLLECTOR SUPPLY VOLTS tVeel
CASE TEMPERATURE ITe). 25° C

40
60
80 100
200
COLLECTOR MILLIAMPERES tIcl

~2B

F ig.6 • Gain.bandwidth product vs collector current
for 2N3553

~~;i~~~~:R:~~:ELrT~,OsL;;.~ vcc \
16

tl
z

"
0

12

'""'-

~~

r
~
/

=>1

~ .. 10
-;:

~~

'-...

40

,

......

"-

8

6

L

--...., ...... ............

... 0

...
'"''>0

:....-::

~

-2

!
4

QO

'I)

~~,QO'--

0-

.~

I f6

5

7

I

•

9

2

100
FREQUENCY (f 1- MHz

,

92CS-12732RI

Fig.9 • Series input resistanc:e vs Irequenc:y lor 2N3553

COLLECTOR SUPPLY VOLTS (Vee' -28
CASE TEMPERATURE (Tc) c 25°C

I.

~

12.5

i~~

...
,"..

10

Zo

sf

•

ES

2.5

a

:i'

-2.5

i!
i!i

~
y~ ~

g
It!
!

...0.0"
",;

... -E
..

!

-4

•

00

40

~i

Ei
5~

~:

t:..:a:

itS"

~"~I/~s

~~ ~
_250

10

a
40

100

2

,

4

.00

92.CS-12733RI

15

~

~~o<{~

C)-o

I"'~PE:/ll:s fIc) • 50

~a::

51
0. •

10

250

~J
5

6

7

•

9

100

,

a
4

40

500

FREQUENCY If 1- MHz

Fig.13 • Parallel output c:apac:itanc:e vs Irequenc:y
lor 2N3632

52

9

Fig.12 • Series input reac:tanc:e vs Irequenc:y lor 2N3553

20

'I' ""((

i'-

•

FREQUENCY If J- MHz

"'''
Uo

~)-o

~8 20

7

25

Ko«~J
"

f..-"j/

• •

g~ii~1~~R~~~:~Y(~gl~~~. (~cc I ·28

COLLECTOR SUPPLY VOLTS tVeel ·28

uo

~~

92CS-12512RI

CASE TEMPERATURE ITc) • 25° C

z ..

\.."'''~Y

a

z

Fig.l1 • Series input reac:#anc:e vs Irequenc:y lor 2N3375

...."'.,5:

~,v

0.

100

:- ~

~~

b...4

.I<

r--

30

g~~~"'-'l

;!;I

!i

FREQUENCY (f 1- MHz

40

/

.if~V'
\.

8

.,

.....

~

40

.I

0"

I

-.

·28

'"

COLLEC10~V

r-

I

1;1

,a\I-I-\~~~~

0. ...

I<

J

'00

Fig.l0 - Series input reac:tanc:e vs Irequenc:y lor 2N3632

I

~y

7.5

0."

;;:1
0_

V

4

92CS-12841RI

~~~~E,.cEr:pRE:~;:Rl: (~~~~~~ ~c

I

'/

6

•

100

2

FREQUENCY If 1- MHz

4

500

92CS-12516RI

Fig.14 - Parallel output c:apac:itanc:e vs Irequenc:y
lor 2N3375

2N3375,2N3553,2N3632,40665,40666

File No. 386
COLLECTOR SUPPLY VOL T5 tV ee )
CASE TEMPERATURE (TC)=25<1 C

~

28

COLLECTOR SUPPLY VOL T5 (Vee I

2'

f':: t--"oll

~~

~: 20

I'

u~
~o

3~

"0-9

15

5'N

14"'''~1/

~J' 10

40

.

, • , , 100

~~

-fl=

0-

2

3

zoo

~~

~~~.rCI·o?5

0

~

,,0

.. I
~]

•

~-

~

.:= '"'"\

(~"

,~«

s

28

CASE TEMPERATURE (Tel" 25° C
30

3

~\.l

<')0

f'.- r--...

~1>

~~

'\

~"-...~'"
~~o
<'s0j'-"'---

~w
100

a:~

!

I--...

-=

0

4

'00

6

40

7

B 9 100

4

.00

FREQUENCY (t 1- MHz

FREQUENCY (f 1- MHz

92CS-12840R2

92CS-12737RI

Fig. 15 - Parallel output capacitance vs frequency
lor 2N3553

Fig.16 - Parallel output resistance vs frequency

lor 2N3632

COLLECTOR SUPPLY VOLTS lVeel -28
CASE TEMPERATURE (Tc1~25· C

500

~"o

.::11:400

~«~l
)'\C')o

~6

?;l
a£boo

0",

r-.~"I",,,

~£

i~20
a~
we

CJ. 25

~

0
40

100
FREQUENCY t f 1- MHz

30

500

. .,
,

100
FREQUENCY

2

WI
3

t 11- MHz

4

500

92LS-14~RI

Fig.18 - Parallel output resistance vs Irequency
for 2N3553

CASE TEMPERATURE (TC'-25· C
]

30

15

!!

25

~

~

§~~

,

FREQUENCYlfl·IMHz

FREQUENCY t fl· I MHz
CASE TEMPERATURE(TC)- 2S·C

j!

4

92C$-12574RI

Fig.17 - Parallel output resistance vs Irequency
lor 2N3375

J

I'""':
"'~
oS (/

a:~ 100

u(I)IO

20

~:

IIJjf 15

...
I

10

I

o

~8
~

10

20
30
40
50
60
COLLECTOR-lO-BASE VOLTS (Ves)

o

70

10203040506070
COLLECTOR-TO-BASE VOLTS

92L.S·L474RI

Fig. 19 _ Collector-to-base capacitance vs collector-tobase voltage lor types 2N3632 & 40665

(Vea)
92CS-12738RI

Fig.20 - Collector-to-base capacitance vs collector.tobase voltage lor 2N3553

53

File No. 386

2N3315,2N3553,2N3632,40665,40666

92L5-1412RI

* Emitter in type 40665 is connected internally to case.
Cl: 3-35 pF
C7 : 8-60 pF
C3' C5: 0.005 JJF.
~.

L3: ferrite choke, Z

= 450 ohms

C4: 1000 pF
C6: 1.5·20 pF

L4: RF choke. 0.47 JJH
!.s: 3-1/2 turns No. 16 wire.
1/4 In. 10.7/16 in. long
La: 1 turn No. 16 wire.
1/4 in. 10. 3/8 in. long

L, : 3 turns No. 18 wire,

R 1: 50 ohms

disc ceramic

* Emitter in type 40665 is connected internally to case.

Cl' C2' C3' C4: 7-100 pF
C5: 1000 pF
C6: 0.01 JJF. disc ceromic
L, : 1.5 turns No. 16 wire. 3/16 in. ID, 5/16 in. long
L2: Ferrite choke, Z = 450 ohms

L3: 1 turn No. 16 wire. 1/4 in. 10. 3/8 in. long
L4: 2 turns No. 16 wire. 1/4 in. 10. 1/4 in. long

1/4 in. 10. 1/4 in. long
L2: 3/16 in. wide copper
strip, 3/8 in. long

Fig.21 - 260 MHz amplilier test circuit lor measurement
01 power output lor 2N3632 & 40665

Fig.22 - 175 MHz amplilier test circuit lor measurement
01 power output lor 2N3632 & 40665

+ lIce-'S

92CS-12~RI

92LS-1473RI

* Emitter in type 40666 is connected internally to case.
* Emitter in type 40666 is connected internally to case.

s

C and R1: are not used for 40666 test

Cl: -2.25 pF
C2' C3' C4: 4-40 pF
Cs : 50 pF. disc ceramic

Cs: 0.005 pF. disc ceramic

C6: 1000 pF

Ll: 1 turn No. 16 wire. 1/4 in. 10. 1/8 In. long
L2: Ferrite choke. Z = 450 (+20%) ohms
L3: 0.47... H choke
L4: 2 turns No. 16 wire, 3/8 in. 10, 7/16 in. long
R,: 1.35 ohms, non-inductive

Fig.23 - 260 MHz amplilier test circuit lor measurement
01 power output lor 2N3375 & 40666

54

C1 • C2 • C3' C4: 7-100 pF

C6: 1500 pF
C7: 0.005 JJF. disc ceramic

C7 : 0.01 JJF. disc ceramic
L1: 2 turns No. 16 wire, 3/8 in. 10,314 in. long
L2 • L3: 1.5 JJH choke
L4: 7 turns No. 16 wire, 3/8 in. 10, 1 in. long

R1 : 1000 ohms

Fig.24 - 100 MHz amplifier test circuit lor measurement
01 power output lor 2N3375 & 40666

File No. 386

2N3375.2N3553.2N3632.40665.40666
+Vcc

92CS-IZ566R2

*

Emitter in type 40666 is connected internally to case.

Fig.25 - 400 MHz amplifier test circuit for measurement
of power output for 2N3375 & 40666

* Collector in type 2N3553 is internally connected to the case.
Fig.26 - 500 MHz oscillator circuit for measurement of
power output for 2N3553 & 2N3375

+VCC=2B
92CS-12140R2

+Vcc
For

50~MHz

C1 • C4:
C2' C3 :
C5 :
C6 :

Operation:

Cl' C2 : 24-200 pF
C3 : 32-250 pF
C4 : 7-100 pF
CS: 1800 pF,
disc ceramic
C6: 2000 pF
C7 : 0.01 ~F,

disc ceramic

L 1 : 5 turns No. 16 wire,

1/4 in. ID. 1/2 in. long

L2: Ferrite choke, Z "" 450 ohms
L3: 7·~H choke

in. long

R'l : 1.35 ohms, non·inductive

For 175 MHz Operation:

C1 :
C2 :
C3 :
C4 :
C5 :

2-25 pF
4-40 pF
1.5·20 pF
1.5·20 pF
100 pF,
disc ceramic
C6 : 2000 pF
C7 : 0.01 ~F,
disc ceramic

L,: 1-1/2 turns No. 16 wire,
5/16 in. ID, 1/2 in. long
L 2 : Ferrite choke, Z ::: 750 ohms

L3: 4 turns No, 16 wire,
5/16 in. 10, 1 in. long

L4: 7 turns No. 16 wire,
5/16 in. ID. 1-1/8 in. long
R,: 1.35 ohms, non-inductive

disc ceramic

L,: 4 turns No. 16 wire,
3/8 in. ID, 3/8 in. long
L 2 : 3/16 in. wide copper
strip, 1/16 in. long
L3: Ferrite choke,
Z = 450 ohms
L4 : 1/2 turn 3/16 in. wide
copper strip, 1/4 in. ID
L5: 2 turns 3/16 in. wide
copper strip, 1/4 in. 10,
1/2 in. long

L 4 : 6 turns No. 20 wire on 3/8 in.
coil form tslug-tuned),
1~1/8

1.5-20 pF
3-35 pF
1.000 pF
0.005 ~F,

Fig.2B - 260 MHz amplifier circuit for measurement of power
output for 2N 355 3

Fig.27 - Amplifier circuit for measurement of power output for 2N3553 at 50 and 175 MHz

(Q.5W)

(O.IS W)

(25-30W)

(O.IW)

(3W)
(lOW)

92CS·128Z1RI

Fig.29 - Typical 175 MHz amplifier chain for POE of
25 to 30 watts

Fig.30 - Typical 260 MHz amplifier chain for POE of
10 watts

55

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 77

OOQ8LAJ

RF Power Transistors

Solid State
Division

2N3478

SILICON N-P-N EPITAXIAL
PLANAR TRANSISTOR
For VHF/UHF Applications
in Industrial and Commercial Equipment

Features:
• high gain-bandwidth product fT = 900MHz typo
• low noise figure

NF
JEDEC TO-72 .

=SdB typo at 470MHz

4.SdB max. at 200MHz
2.SdB typo at 60MHz

H-1299

• high unneutralized power gain
Gpe = 11.SdB min. at 200MHz
• hermetically sealed four-lead package
• all active elements insulated from case
• low collector-to-base feedback
capacitonce, Ccb 0.7 pF max.

RCA-2N3478 is an epitaxial planar transistor of
the silicon n-p--n i;ype with characteristics which make
it extremely useful as a general purpose rf amplifier
at frequencies up to 470 MHz. These characteristics
include an exceptionally low noise figure at high frequencies, low leakage current, and a high gain-bandwidth product.
The 2N3478 utilizes a heimetically sealed foUl'lead package in which active elements of the transistor
are insulated from the case. The case may be grounded
by means of a fourth lead in applications requiring minimum feedback capacitance, shielding of the device,
or both.
Maximum Ratings, A bsolute ...Maximum Values:
V
Collector-to-Base Voltage, VCBD •••• _ •• 30 max.
Collector-to-Emitter Voltage, VCEO. • • •• 15 max.
V
V
Emitter-to-Base Voltage, VEBO' •••••.•• 2 max.
Collector Current. Id •••••••••••.. limited by dissipation
Transistor Dissipation. PT:
at ambient } up to 25° C • • • • . .• 200 max.
mW
temperatures above 25° C •••••••••••••• See Fig. 1

Temperature Range:
Storage and Operating (Junction)

Fig. I - Rating chart lor type 2H3478

-65 to 200

Lead Temperature (During Soldering):
At distances not closer than
1/32" to seating surface for

10 seconds max.. . • • • • • . • . • . . .. 265 max.

°C

9itCS-I2756R2

Fig. 2 - Typical small-signal beta characteristics
lor type 2H3478
9-74

56

File No. 77 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3478
ELECTRICAL CHARACTERISTICS, At an Ambient Temperature (TAJ of 250 C
TEST CONDITIONS
DC
Frequency

Symbols

Characteristics

f

Collector.. CollectorDC
DC
ta .. Bose to-Emitter Emitter Collector
Voltage
Voltage
Current
Current

MHz
Collector-CutoH Current

BV CBO

Collector-la-Emitter

BVCEO

Type

2N3478

VCB

VCE

IE

IC

V

V

mA

mA

Min.

Typ.

0.001

30

-

0.001

IS

0

8

8

1

ICBO

Collector-la-Base
Breakdown Voltage

LIMITS

DC

0
0

-0.001

BVEBO

-

V

2

-

-

V

2

2S

-

ISO

2

7.S

9

16

-

-

1

pF

II.S

-

17

dB

-

12

-

dB

S

-

dB

hFE

Magnitude of Small-Signal
Forward-Current
Transfer Ratio

hre D

100

Ccb b

1

GpeQ

200

8

2

Gpeo, c

470

6

1.5

0

Small-Signal, Common-Emitter
Power Gain in Unneutralized
Amplifier Circuit (See Fig. 3)

Small-Signal, Common-F.mitter
Power Gain in Neutralized
Amplifier Circuit

/lA

-

Static Forward-Current
Transfer Ratio

10

0.02

V

Breakdown Voltage

Collector-la-Base
Feedback Capacitance

Max.

-

Breakdown Voltage
Emitter-la-Base

Units

UHF Noise Figure

NFo, c

470

6

I.S

-

VHF Noise Figure (See Fig. 3)

NF a
NFa,d

200
60

8
8

2

-

1

4.S
2.S

-

dB
dB

a Fourth lead (case) grounded.

e Source ITesistance, Rs = 50 ohms.

b C cb is a three terminal measurement of the collector-to-base capacitance
with the emitter and case connected to the guard terminal.

d Source Resistance, Rs = 400 ohms.

CI. C4 = SIOpF
C 2 • C7 = 2300 pF
C3. Cs = 2-2S pF
C6 = 10pF

r.-<--~-i_~,
-L0UTPUT
e~

=-

"1 = 20000hms
Q
2N3478
Ll

~ Turn #14 Formvar·center
tapped

Length}...11 = 2 inches
L2 = Yz Turn # 14 Formvar·

Length2.t 2 = II> inches

-Vee

L3 = liLH RF choke

+VEE

Source (Generator) Resistance
Rg = SO ohms

'J2CS-12T53

Load Resistance RL = 50 ohms
• Trademark, Shaw indian Products Corporation.

Fig. 3 -.200 MHz power gain and noise ligure test circuit lor type 2N3478

57

2N3478 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _--...,_ _ _ _ _ _ _ _ _ File No.

COMMON-EMITTER CIRCUIT, BASE INPUT;
OUTPUT SHORT-CIRCUITED.
FREQUENCY (f) '" 200 MHz
AMBIENT TEMPERATURE (TAJ ~ 25°C

-20

~

COLLECTOR M1LlAMPERES (Ie)
9ZCS_121~7RI

Fig. 4 -Input admittance (Yie)

-30

'j"
'"I -40

§

w -50

!;!

;:
~ -60

~

~ -70

g
!

-80

c

VCE=15

-90

fi

-100

-110

-120
0

2.5

COLLECTOR MILLAMPERES (Ie)

7.S.

10

12.5

COLLECTOR MILLIAMPERES

15

(Iel

92CS-12759RI

Fig. 5 - Output admittance (Yo e)

92C"'-14112

Fig. 6 - Forward transadmittance (Yfe)

TERMINAL CONNECTIONS

Lead
Lead
Lead
Lead

4

6

B

10

COLLECTOR MILLIAMPERES (Ie)
92CS.1276QRI

Fig. 7 - Reverse transadmittance (Yre)

58

1234-

Emitter
Base
Collector
Connected to Case

n

File No. 72

RF Power Transistors

ffil(]3LJD
Solid State
Division

2N3733
10-W, 400-Mc Silicon N-P-N
Overlay Transistor
For Large-Signal, High-Power
VHF/UHF Applications
Features:
• High power output, unneutralized Class C amplifier:
at 400 Me
10 W min.
at 260 Me
14.5 W typo
• High voltage ratings:
VCBO = 65 V max.
VCEV = 65 V max.
VCEO = 40 V max.

JEDECT0-60

RCA·2N3733 is an epitaxial silicon n·p·n planar transistor
intended for class A, B, and C amplifier, frequency·
multiplier, or oscillator operation. The 2N3733 was de·
veloped for vhf/uhf applications.
The transistor emplovs the overlav concept in emitter·
electrode design .. an emitter electrode consisting of man V
microscopic areas connected bV a diffused·grid structure and
an overlav of metal applied on the silicon wafer bV means of

• 100 per cent tested to assure freedom from second
breakdown for operation in Class A applications

•

Low thermal resistance

a photo·etching technique. This arrangement provides the
verv high emitter·peripherv·to·emitter·area ratio required for
high efficiencv at high frequencies.

MAXIMUM RATINGS, Absolute·Maximum Values:
'COLLECTOR·TO·BASE VOLTAGE
VCBO
COLLECTOR-TO·EMITTER VOLTAGE:
With base·emitter junction reverse·biased (VBE = ·1.5 VI ......... . VCE\,
'With base open . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCEO
'EMITTER·TO-BASE VOLTAGE
VEBO
'COLLECTOR CURRENT:
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"CONTINUOUS BASE CURRENT . . . . . . . . . . . . . . . . . . . . . . . . . . IB
"TRANSISTOR DISSIPATION:
At case temperatures up to 25°C
At case temperatures above 25°C

65

V

65
40
4

V
V
V

3

A
A
A

PT

... ...................... .
"

"TEMPERATURE RANGE:
Storage and operating (junction) . . . . . . . . . . . . . . . . . . . . . . . . . .
"LEAD TEMPERATURE (During soldering):
At distances;;' 1/32 in. (0.8 mm) from insulating wafer for 10 s max ...

23
Derate linearlv to 0 watts at
200°C

W

-65 to 200

°c

230

°c

*In accordance with JEDEC registration data

8-72

59

2N3733

File No. 72

ELECTRICAL CHARACTERISTICS, At Case Temperature lTC' = 25"C unless otherwise specified
TEST CONDITIONS
CHARACTERISTIC

VOLTAGE
Vde

SYMBOL
VCB

Cellector Cutoff Current:
With base open

Emitter Cutoff Current

Celleetor·to·Base
Breakdown Voltage
Cellector·to·Emitter
Breakdown Voltage:
With base-emitter junction reverse-biased

IB

IC

LIMITS

-

65

-1.5

-

5

30

-1.5

-

10

ICBO
lEBO

0

-

65

0

0.25

V(BR)EBO

mA

0.5
0.25

65

-

V

Ot020oe 65** -

V

4

-

V

200

40

-

200

40

-

1
0.25

5
10

150

0.5

-1.5

V(BR)CEV

0.25

-

-4

V(BR)CBO

UNITS

MIN. MAX.

ICEV

Emitter-to-Base

Breakdown Voltage

IE

30

At TC = 200·C

With emitter open

VBE

ICEO

With base-emitter june-

tion reverse-biased

VCE

CURRENT
mAde

0

mA

Collector-ta-Emitter

Sustaining Voltage:

0

VCEO(sus)

With base open

V

With external base-to-

emitter resistance
(RBE) = 100 Q
DC Forward Current
Transfer Ratio
Collector-ta-Emitter

Saturation Voltage
Base·Emitter Voltage

VCER(sus)
5
5

hFE

-

1000

-

1

V

5

1000

-

1.5

V

28

250

2.5'

-

2B

250

4.0 (typ.)

250

-

25

pF

Pi

-

4

W

'IlC

45

200

VCE(sat)
VBE

Magnitude of Common-

Emitter, Small·Signal,
Short-Circuit Forward

Current Transfer Ratio
(I = 100 Me)
Collector-to-Base Capacitance
(1=0.1 to 1 Me)
Available Amplilier Signal
Input Power

Po = 10 W, ZG = 50 n,
1= 400 Me

I hlel

Cob

28

Collector Circuit Efficiency

Po =10W,ZG=50n,
1= 400 Me
Sase-Spreading Resistance
Measured at 200 Me
Cellector·to·Case Capacitance
Thermal Resistance

(Junction·to·Case)

rbb

C.
RoJc

'----

·Pulsed through an inductor (25 mH); duty factor" 50%
*·Measured at a current where the breakdown voltage is a minimum
*.In accordance with JEDEC registration data

60

28

250

-

6.5 (typ.)

-

%

Q

6

pF

7.5

·C/W

File No. 72

2N3733

COLLECTOR-tO-EMITTER VOLTS (VCE 11I28
CASE TEMPERATURE (TC)- 25° C
15

.,...

14

i

12

1;

II

I

.p

10

...

Ii...

"
0

'"I
"g

r-.......

"3

:z:

~
:a
;;;
.,

~.1

.'"

~

7

250

300

350

.

""

~

200

400 450 500

FREQUENCY -

300

I

"-"rI

6
200

V

400

b

~.,

'"~

500

8
if

~V)- ~2

B

--

600

'j:.

r---4

~",,,,,
~~

9

700

~

""
'" .......
~...""

13

COLLECTOR SUPPLY VOLTS tVeel "28
CASE TEMPERATURE ITc) • 25· C

600

50

700 BOO

Me

100

150

200

COLLECTOR MILLIAMPERES

250

300

(I C '

92CS-13134

92CS-12830RI

Fig. 2-Gain-bandwidth product vs. collector
Fig. 1-Power output

current.

frequency.

V$.

COLLECTOR SUPPLY VOLTS tVeel =28
CASE TEMPERATURE (Tel" 25" C

tJ

z

~

~
~
\~ 'L

~ .....
""'t-.,

~~

... 0

"I

~ .. 10

;:5

I":

~e9

[:7

I'-..
:--

B

J

CASE TEMPERATURE (Tel:: 25° C

i'-...

I

...O~
'"0:

COLLECTOR SUPPLY VOLTS tVeel =28

/"

f't--

~

.'"
~

10

~

B

'~~
"

.. :z:

6

;:1

o.

4

ti:E
"e

.....

2

[7

~ "7

COLLECTOR~ ' ~ILLIAMPERES\1.C'

7

8

9 100

~~~
\OO~I--

..

4

'!!

..:;.v

~~'"

I..\I>"'~~ ~

01-- I--i OLLEe,OR

~

.,'il

(p

500

Fr
•

40

7

~~

II

8 9 100

500

FREQUENCY If 1- MHz

FREQUENCY (f 1- MHz

92CS-IZ84IRI

92CS-IZS43Rt

Fig. 3-Series input resistance vs. frequency.

Fig. 4-Series input reactance VI. frequency.

COLLECTOR SUPPLY VOLTS tVeel =28

COLLECTOR SUPPLY VOLTS tVeel ;28

CASE TEMPERATURE (Tcl

CASE TEMPERATURE (Tel'" 25 0 c

f-.

.......'"

• 25· C

300

40

~~
z ..

~

30

Ko«~J

,,0

~1200

4t/(

~At.'Pel/es

"-

~~

~

... :z:

,.... o~

~i

I--

!ll

e"

~

~\5
..
u 20

"u
0-

\':,0

'l)

c~

-2
-4

6

0V/

1l

zO

6
40

J
'/

ON

~ I=1"---250-=

...~~

1\"1'

1'-..

",

~~
;l~

~~

10

~

R«J<""-"
r--

~

~
"'.0~1'

~~

100

eJ.

So

;;

0
40

5

•

1

•

9

.es0r-~ t-

O
3

100

FREQUENCY If 1- MHz

Fig. 5-0utputcapacitance

VI.

4

500

40

6

7

8 9 100

F=
4

500

FREQUENCY If 1- MHz
92cs-r2832RI

frequency.

92.CS-IZ940R2

Fig. 6-0utput resistance

VS.

frequency.

61

FileNo. 72

2N3733
FREQUENCY· I Me .
CASE TEMPERATURE CTC). 2!5· C

J

30

~

25

Illl!l
C,

At

5

o

ID
15
W
~
~
COt..LECTOR-TO-BASE VOLTS (Vea)

~

35

92CS-12B31

Fig. 7- Variation of collecror-ttNJa&e capaci-

Fig. 8-RF amplifier circuit for power output test at 400 Me.

tance.

+VCC-28V

92C$-I"S9

L3: Ferrite choke, Z = 450 ohms

C1: 3-35 pF

L4 : RF choke, 0.47 I'H

~,C4'Cs: 8-00 pF

Ls:

C3'C6 : 0.0051'F,
disc ceramic
C5 : 1,000 pF
C6: 1.5 - 20 pF

3-1/2 turns No. 16 wire,
1/4 in. (6.35 mm) ID,
7/16 in. (11.11 mm) long

Ls:

L 1 : 3 turns No. 18 wire,
1/4 in. (6.35 mm) ID,
1/4 in. (6.35 mm) long
~: 3/16 in. (4.76 mm) wide

1 turn No. 16 wire,
1/4 in. (6.35 mm) 10,
3/8 in. (9.52 mm) long
R 1 : 500hms
R 2 : 0.560hm

copper strip,
3/8 in. (9.52 mm) long
Fig. 9-RF amplifier circuit for power output test at 260 Mc.

TERMINAL CONNECTIONS
Pin No.1 - Emitter
Pin No.2 - Base

Pin No.3 - Collector

62

File No. ;i!29 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _--'-_ _ _ _ _ _ _ __

oornLJD

RF Power Transistors

Solid State
Division

2N3839

RCA-2N3839* is a double-diffused epitaxial planar
transistor of the silicon n-I>-n type. It is extremely useful in low-noise-amplifier, oscillator, and converter
applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the
common-base configuration.
The 2N3839 is mechanically and electrically like
the 2N2857, but has a substantially lower noise figure.
The 2N3839 utilizes a hermetically sealed fourlead JEDEC TO-72 package. All active elements of
the transistor are insulated from the case, which may
be grounded by means of the fourth lead in applications requiring shielding of the device.
Maximum Ratings,

Absolute~Maximum

Values:

COLLECTOR-TQ-BASE VOLTAGE, VCBO .. 30 max.
V
COLLECTOR-TQ-EMITTER
VOLTAGE, VCEO . . . . . . '.' . . . . . . . .. 15 max.
V
EMITTER-TQ-BASE VOLTAGE, VEBO' . . .. 2.5 max.
V
COLLECTOR CURRENT, IC . . . . . . . . . . . 40 max. rnA
TRANSISTOR DISSIPATION, PT:
For operation with heat sink:
At case
{up to 25°C •.••••••.• , 300 max. mW
temperatures** above 25°C . . . . . . Derate at 1.72 mW/oC
For operation at ambient temperatures:
At ambient
{up to 25°C. . . . . . . . . .. 200 max. mW
temperatures
above 25°C . . . . . . Derate at 1.14 roW/DC
TEMPERATURE RANGE:
Storage and Operating (Junction) . . . . . . . . -65 to +200 °c
LEAD TEMPERATURE oM
~~

ffi",

~O_4

'"

Z

10

4

..

100

Z

• •

4

1000

FREQUENCY (f)-MHz
92CS-12151R,

92CS-12152RI

Fig. 11 • Forward Transadmittance (Yfe/.

Fig. 12 • Reverse Transadmittance (Yre/.

TERMINAL CONNECTIONS
LEAD
LEAD
LEAD
LEAD

1•
2·
3•
4.

EMITTER
BASE
COLLECTOR
CONNECTED TO
CASE

66

File,No.80

OOOBLJD

RF Power Transistors

Solid State
Division

2N3866

Silicon N-P-N Overlay Transistor
High-Gain Driver for VHF/UHF Applications
in Military and Industrial Communications Equipment
Features
• High Power Gain, Unneutralized Class C Amplifier
1 W output at 400 MHz (10 dB gain)
1 W output at 250 MHz (15 dB gain)
1 W output at 175 MHz (17 dB gain)
1 W output at 100 MHz (20 dB gain)
a Low Output Capacitance
Cobo = 3 pF max_

JEDECTO-39

MAXIMUM RATINGS. AbsoluurMaximum Values:

* COLLECTOR-TO-BASE VOLTAGE _.. VCBO

55

V

COLLECTOR-TD-EMITTE R
VOLTAGE:

With external base-ta-emitter
resistance (RBE) '" 10n . ......... VeER
With base open· ............... VCEO

* EMITTER-TD-BASE VOLTAGE

" , .. VEBO

55

V

30

V

3.5

V

0.4
0.4

A

* CONTINUOUS COLLECTOR
CURRENT .................... -

* CONTINUOUS BASE CURRENT .. _. _
* TRANSISTOR DISSIPATION

At case temperature up to 25o~ ... .
At case temperatures above 25 C .. .

IC
IB

A

P-r

w
See Fig. 4

* TEMPERATURE RANGE:
-65 to +200

Storage & Operating (Junction) . .... .

oC

* LEAD TEMPERATURE
At distances> 1116 in. (1.58 mml
from seatingplane for 10 s max .....

RCA-2N3866 is an ,epitaxial silicon n-p-n planar transistor
employing an advanced version of the RCA-developed
"overlay" emitter-electrode design. This electrode consists of
many isolated emitter sites connected together through the
use of a diffused-grid structure and a metal overlay which is
deposited on a silicon oxide insulating layer by means of a
photo-etching technique. This overlay design provides a very
high emitter periphery-to-emitter area ratio resulting in low
output capacitance, high rf current handling capability, and
substantially higher power gain.
The 2N3866 is intended for class-A, -8, or -C amplifier,
frequency-multiplier, or oscillator circuits: it may be used in
output, driver, or pre-driver stages in vhf and uhf equipment.

230

*In accordance with Je'OEC registration data format JS-6 RDF-3.
COLLECTOR SUPPLY VOLTAGE (Vcc)· ZB V

CASE TEMPERATURE (Tel. 2S o C

f

'j:.

~

c,

2,0f----::----:i::-------i----t--t--t

.,

C,: 3-35 pF
C2. C5: 8-60 pF

!

C3: 12 pF
C4: 1,000 pF, feedthrough
C6: (}.9-7 pF

ffi

~

~ O.8f-----+----~----'l--+--I
0 .•
100

200

400

600

BOO

fREQUENCY ( f ) - MHz
92CS-13146RI

Fig. 1 - Power output vs. frequency

Ll: 2 turns No. 18 wire,

1/4" 10,1/8" long
L2: Ferrite rf choke,
1 turn. Z = 450n

L3, L4: RF choke, 0_1 ~H
LS: 2-1/2 turns, No. 18 wire,
1/4" 10,3/16" long

Rl: 5.6n,1 W

Fig. 2 - RF amplifier circuit for power output test (400-MHz
operation)

9-74

67

File No ..80

2N3866
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc!

a

250C

STATIC
TEST CONDITIONS
CHARACTERISTIC

DC
Voltage
(VI

SYMBOL

DC
Current
(mAl

VCE

VEB

55
30

1.5
1.5

IE

IB

LIMITS
IC

Collector-Cutoff Current:

Base-emitter junction reverse biased

ICEX

T,., = 2000C
~aseopen

211

ICEO

Collector-to-Base Breakdown Voltage

0

• Collector-ta-Emitter Breakdown Voltage:
With base open
With base connected to emitter through

l0-0hm resistor

0

V(BRICEO

• Emitter-ta-Base Breakdown Voltage

* Collector-ta-Emitter Saturation Voltage

VCE(satl

• DC Forward-Current

20

Transfer Ratio
Thermal Resistance:
(Junction·to·Casel

mA
IlA

-

V

5

30

-

5

55

-

0

3.5

-

V

0.1

mA

100

-

1.0

V

360

5
5

hFE

0.1

55

3.5

lEBO

-

0.1

0.1

V(BRIEBO

Emitter-Cutoff Current

Max.

20

0

V(BRICER

Min.

-

0

V(BRICBO

UNITS

50

8J·C

5

-

5
10

200

-

35

V

OC/W

DYNAMIC
TEST & CONDITIONS

SYMBOL

LIMITS

FREQUENCY
MHz

MINIMUM

MAXIMUM

UNITS

Power Output (VCC = 2B VI:
PIE=O.lW

POE

400

1.0

-

W

Large-Signal Common·Emitter Power Gain (Vce = 28 VI:
PIE=O.lW

GpE

400

10

-

dB

%

Collector Efficiency (Vec = 28 VI:
PI E = 0.1 W. POE = 1 W.Source Impedance = 50n

TIe

400

45

-

• Magnitude of Common-Emitter, Small Signal, Short-Circui
Forward-Current Transfer Ratio
IC= 5OmA. VCE = 15 V

Ihfe I

200

2.5

-

* Available Amplifier Signal Input Power, POE = 1 W.5oure
Impedance ~ 50n (See Fig. 21

Pi

400

-

0.1

W

Cabo

1

-

3

pF

• Common·Base Output Capacitance (V eB = 28 V)
• In accordance with JEDEC registration data format JS-6 AOf-3

1000

:I!
I aoo

"

~

..
..."
u

..
'"
i

600

a:

CASE TEMPERATURE (TCI-ZS.C

,.,..-

1 J

'a

VA ;:::::-- OLLECTOR~
~

~~

16

~o<~~

10

'1)'e,~

...... ~

.. .~~

""~,

400

·6..

z

c

':'

.
~

200

o

ZO
40
60
COLLECTOR CURRENT (lei -mA

80

Fig. 3· Gain·bandwidth product lIS. collector current

68

100
CASE TEMPERATURE:-·C

IZCI·UII5I

Fig. 4 . Dissipation derating curve

1J2C5-10446R2

2N3866.

FileNo. 80
10008

.
..

E

,

;.

Ie MAX .

t'-.

u

!!
11

HOT SPOT TEMPERATURE

~?07·

2

z

'"

a:
a: 100

0

8rHOTE: TJS IS DETERMINED BY

a:

'r-

~

8

']

4

I

:'!

FREQUENCY If) • 1MHr.
CASe TEMPERATURE (Tel- 25' C

CASE TEMPERATURE (TC)- IOO·C

USE OF INFR,t,RED
SCANNING TECHNIQUE

!

ill 4

'I

;!

I

4

veEo MAX.

8

~

2

10
2

4

, •

COLLECTOR~TO-EMITTER

6 \

§ \.

2
4
10
VOLTAGE (VCEI-V

6

•100

r--

2

o

10

20

30

COLLECTOR-To-BASE VOLTAGECVcol-Y

92CS-J7671

Fig. 5· Safe area for dc operation

Fig. 6· Variation of collector-to-base capacitance
DESIGN DATA

REFLECTION COEFFICIENT SCALE

CENTER

90·

COLLECTOR·TO-EMITTER VOLTAGE (VCE)
COLLECTOR CURRENT (Ie) = 50 mA
CASE TEMPERATURE (T C) =2S·C

= ISV

-90·
92C5-17672

Fig. 7· Typic~1 S parameters vs. frequency

69

File No. 80

2N3866
COLLECTOR-To-EM1TTER VOLTAGE (VeE' • 15 V

COLL£CTOR-TO-EMITTER VOLTAGE (VeE)· 15 V
CASE TEMPERATURE (Tc) • 2S·C

CASE TEMPERATURE (TC)· 2SoC

35

"I

g
'"u

/J

I

/0

L //L

8

/A

~ or-'-""
~ ...4

II!

-4

I

oO~/#

-8
-I'

V
0

10
FREQUENCY (f)-MHz

",. l'l.C /"iV"AV
CU'I"E:;...-- ...... :..:r...f>

~~ I-""~
~;.....---_f>O
...,......
,.,.-

--

•

•

.

,

100
FREQUENCY (n-MHz

92CS-13150RI

COLLECTOR-TO-EMITTER VOLTAGE (Vee) • 15 V

l~
i"

j

!g '\\
'8

,\

14,\

\

~

i
I

frequency

COLLECTOR-tO-EMITTER VOLTAGE (VeE' • 15
CASE TEMPERATURE (Tc) • 2S-C

CASE TEMPERATURE (Te) • 2Soc

~

92CS-13151RI

vs.

Fig. 9· Typical series input reactance

Fig. 8 . Typical series input resistance vs. frequency

~

I'-...

~

co((

~~.f!:..°l/Cll
•
.l..- 100 ~ ::::-..~r (~CJ
~~~

Ii

8-

0

•

8

'0

,

Co((
'\ I~
E"Cto

8

t:-....:

8 4•
~ •

,

'00

\.'\.

"
0

1'/ cUl/l/e

Nr (leI- 25 mA

.J

~

4

50

0

50

100

•

FREQUENCY(fl-MHz

8

100

,

•

FREQUENCY tn-MHz
92CS-I5I5!5R1

Fig. 70· Typical parallel output resistance vs. frequency

Fig. 77 • Typical parallel output capacitance

TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector, Case

70

vs.

frequency

File No. 90

RF Power Transistors

OOm5LJD

Solid State
Division

2N4012

High-Power Silicon N-P-N
Overlay Transistor
For Applications as a Frequency Multiplier
Into the UHF or L-Band Range

Features

JEDECTCl-60

•
•
•
•

2.5 W output with 4 dB conversion gain (min.) as tripler to 1 GHz
3 W output with 4.B dB conversion gain (typ.) as doubler to BOO MHz
High voltage ratings
Freedom from second breakdown

RCA-2N4012 is an epitaxial silicon n-p-n planar transistor of
the "overlay" emitter electrode construction. It is especially
designed to provide high power as a frequency multiplier into
the uhf, or L-band, frequency range for military and
industrial communications equipment.
Frequency multiplication - with power amplification - is
possible with the overlay structure because the variable
collector-to-base capacitance becomes the nonlinear element
of a harmonic generator. The collector-to-base capacitance
acts like a variable·capacitance diode, or varactor, in parallel
with the amplifier section of the transistor.
In the overlay structure, there are a number of individual
emitter sites which are all connected in parallel and used in

conjunction with a single base and collector region. When
compared with other structures, this arrangement provides a
substantial increase in emitter periphery for higher current or
power, and a corresponding decrease in emitter and collector
areas for lower input and output capacitances. The overlay
structure thus offers greater power output, gain, efficiency,
and frequency capability.
The 2N4012 pellet is mounted in a JEDEC TO-BO package
electrically isolating all three electrodes from the case for
design flexibility and features low lead inductance and
thermal resistance. The heavy copper mounting stud provides
effective contact with a heat sink.

MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-EMITTER VOLTAGE:
With base open ••••••••••••••••• . V CEO
With VBE = -1.5 volts ........... . VCEV
COLLECTOR-TCl-BASE VOLTAGE •••• VCBO
EMITTER-TO-BASE VOLTAGE .••.•• VEBO
COLLECTOR CURRENT •..•••.••.••
IC
TRANSISTOR DISSIPATION:

At case temperatures up to 25°C .•.
At case temperatures above 25°C •..
TEMPERATURE RANGE:
Storage & Operating (Junction) •.•.•
LEAD TEMPERATURE (During solderingl:

40
65

65
4
1.5

A

11.6
See Fig. 12

W

-65 '0+200

°c

230

°c

PT

At distanceSL 1/32 in. (0.8 mm) from
insulating wafer for 10 5 max •••••

V
V
V
V

I
"
9UTPUT FREQUENCY (fout)-Gc/s

92CS-13465

Fig. 1-0utput power vs. output frequency

4-71

71

File No. 90

2N4012
ELECTRICAL CHARACTERISTICS, Case Temperature = 250 C
TEST CONDITIONS
CHARACTERISTIC

DC
Collector
Volts

DC
Base
Volts

VCB VCE

VBE

SYMBOL

Coliector·Cutoff Current

Collector·to·Emitter
Saturation Voltage

·1.5

0
500

0

Pulsed through an inductor (25 mH); duty factor = 50%.

Measured at a current where the breakdown voltage is a minimum.
For PI N = 1.0 W; at 334 Me/s; minimum collector efficiency = 25%.
For PIN = 1.0 W; at 400 Me/s; typical collector efficiency = 35%.

e

-

-

1

volt

-

10

pF

+2BV

R

I

I

:RFCI

1RFC,
I

-T""TT""t.

I

I
IL ___ _

OUTPUT FREQUENCY

OUTPUT FREQUENCY
'OUT-BOO Mel.

fOUT= 1002 Mels
92CS-13442

L3" 2 turns, 3/S" diameter,

0.9 - 7 pF
1 - 10 pF

C3. C4. Cs. C6
C7 = 1000 pF

=

No. 18 wire

0.8 - 10 pF

C8 = 0.2~F
RFC, = 0.22 ~ H
RFC2 = 0.33 ohms, W.W. Resistor
L, = 2 turns. 3/S" diameter,
No. 16 wire

L2'" 1/16" width copper strip,

L4 = 1-112 turns, 3/S" diameter,
1/16 copper strip
A = 2.7 ohms
Output Cavity = 1-1/4" x 1·1/4"
x 2-114"
Center Conductor"" 114" 00 tube
Output direct couple = 1/2" from
shorted end

3/S" long

Fig. 2

72

-

I

I
I

IL ____ _

=

volts
volts
volts
volts

,--

I

=

-

DOUBLE CIRCUIT FOR POWER OUTPUT TEST
INPUT FREQUENCY
f'N =400Mc/s

+2BV

I
I

C,
C2

mA

Cutoff frequency is determined from Q measurement at 210 Mc/s.
The cutoff frequency of the collector-to-base junction of the transistor, fc "" Q X 210 Mc/s.

TRIPLER CIRCUIT FOR POWER OUTPUT TEST

,-,,

65
40b
65 b
4

0.1

2.5c
3.0d (typ.) watts

28
28

POUT

b

INPUT FREQUENCY
'IN =334 Mc/s

o to 200a
o to 200a

100
30

UNITS

Min. Max.

-

0.1

a

d

IC

0.1
0

Cob

R F Power Output
Tripier At 1002 Mcls (See Fig. 2)
Doubler At 800 Mcls (See Fig. 3)

IB

0

VCE(sat)

Coliector·to·Base Capacitance
(See Fig. 4)

c

IE

0

BVCBO
BVCEO
BVCEV
BVEBO

Collector·to·Emitter
Breakdown Voltage
Emitter·to·Base
Breakdown Voltage

LIMITS

(M illiamperes)

30

ICEO

Coliector·to·Base Breakdown
Voltage

DC
Current

92CS-13443

C, = 0.9 - 7 pF
C2 = , - 10 pF
C3. C4. Cs = O.S - 10 pF
Cs = 1000 pF
C7 '" 0.2 ~ F
RFC, = 0.22 ~ H

RFC2 == 0.33 ohms, W.W. Resistor
R =: 2.7 ohms

L2 = 1/16" width copper striP.
3/8" long
L3 "" 2 turns, 3/8" diameter,
No. 18 wire
Output Cavity = 1·114" x 1·1/4"
x 2·114"
Center Conductor = 1/4" 00 tube
Output direct couple =: 112" from
shorted end

L, = 1 turn, 3/8" diameter,
No. 16 wire

Fig. 3

2N4012

File No. 90
POWER OUTPUT vs. POWER INPUT

COLLECTOR·TO·BASE CAPACITANCE vs.
COLLECTOR·TO·BASE VOLTAGE
70

FREQUENCY" I Mc/s
CASE TEMPERATURE tTCI-2sac

'1;.

160

J

~ 50

z

~

~
j

.

40

~ 30
I

~

20

~

10

8
10

20

30

40

50

COLLECTOR-lO-BASE

60

70
RF POWER INPUT (Plnl-WATTS (334 Me/51

VOLTS (Vee)
92CS-IH41

Fig. 4

92CS-13444

Fig. 5

GAIN·BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

POWER OUTPUT vs. COLLECTOR SUPPLY VOLTAGE

COLLECTOR SUPPLY VOLTS IVeel·
CASE TEMPERATURE (Tel" 25° C

~ 600
I
£500

281

~

t;

"
~400

r--.....

~

."~

'"""-

300

~

200

a
COLLECTOR SUPPLY VOLTAGE

('Icc' -

92CS-13445

Fig. 6

COLLECTOR SUPPLY VOLTS (Vee) ,,28
CASE TEMPERATURE (Te'" 2S"C
I.

...

c.,
",

14

0."
"'0
~I

~:!!'2
,..col!

...

:;/

15

100

'-

....................

150~

::::::::

~
o,,~/
co\.\.E~;E"~\"\. '--

lA\\.\.\~

I

500
92CS-I2S73RI

/

;;:1

0_

• 'Ii

\..V~ ~

ES

5

ii

~0~

lA\\.\.\ ...

COLLECTO~~

2.5

o.H

>-

a
-2.5
-5
40

/

.,y ~

10

0."
Zc

;S

Fig. 8

300

92CS-12569RI

I

s~ 7.5

~

'"

6 1 8 9 100
2
FREQUENCY ( f ) - MHz

250

12.5

I
~
·z

w

40

200

COLLECTOR SUPPLY VOLTS tv ee , "28
CASE TEMPERATURE (Tel" 25°C

tl

-

150

SERIES INPUT REACTANCE vs. FREQUENCY

I

"'"'l ....... "
...............

100

Fig. 7

SERIES INPUT RESISTANCE vs. FREQUENCY

~

50

COLLECTOR MILLIAMPERES tIel

VOLTS

-

~
2
100
FREQUENCY (f 1- MHz

5 00
92CS-12572RI

Fig. 9

73

2N4012

File No. 90

PARALLEL OUTPUT CAPACITANCE v•.
FREQUENCY

~~~~~1~~R~~:~YI~g)~~~o(~C)

PARALLEL OUTPUT RESISTANCE v••
FREQUENCY
COLlECTOR-TO-EMITTER VOLTS (VCE)-28

-28

CASE TEMPERATURE

(Tc)~25°

C

2.

20
Wo>

lil~

"'"
5~

15

...5251

10

ifu
80:

...

~

~~O«~

.

r"~
~

Mill lAM
P£//£SU C ·<50
250

Q

•
0

40

.

2

100

FREQUENCY

(f

1- MHz

4

o
500

40

100
FREQUENCY-Mcts

Fig. 10

Fig. 11

DISSIPATION DERATING CURVE

CASE TEMPERATURE _·C

Fig. 12

TERMINAL CONNECTIONS
Pin No.1 - Emitter
Pin NO.2 - Base
Pin No.3 - Collector

74

500

92CS-I2S76RI

92.CS-13446

92CS-12574RI

File No. 228

OO(]5LJO

RF Power Transistors

Solid State
Division

2N4427

Silicon N-P-N
Overlay Transistor
High·Gain Driver for VHF·UHF

Features:
• 1 W output with 10 dB gain (min.) at 175 MHz
JEDECTO-39

VCC=12V
• 0.4 W output with 5 dB gain (typ.) at 470 MHz
VCC= 12V

RCA-2N4427 is an epitaxial silicon n-p-n planar transistor of
the "overlay" emitter electrode cOAstruction. It is intended
for class A, B, or C amplifier, frequency-multiplier, or
oscillator circu its; it may be used in output, driver, or
pre-driver stages in vhf and uhf equipment_
In the overlay structure, a number of individual emitter sites
are connected in parallel and used in conjunction with a

single base and collector region_ When compared with other
structures, this arrangement provides a substantial increase in
emitter periphery for higher current or power, and a
corresponding decrease in emitter and collector areas for
lower input and output capacitances. The overlay structure
thus offers greater power output, gain, efficiency, and
frequency capability.

MAXIMUM RATINGS, Absolute-Maximum Values:
• COLLECTOR-TO-BASE VOLTAGE .... _______ ...... _... _.. __ ................. _.
• COLLECTOR-TO-EMITTER VOLTAGE:
With base open .............. _................. _.... _..................... .
• EMITTER-TO-BASE VOLTAGE .......... __ ... _...... _................. _. _.... _
• CONTINUOUS COLLECTOR CURRENT .......................... _............ .
• CONTINUOUS BASE CURRENT .... _...................... _.................. .
• TRANSISTOR DISSIPATION:
At case temperatures up to 100°C ........................................... .
At case temperatures above 100°C .......................................... .
• TEMPERATURE RANGE:
Storage & Operating (Junction) .........................................•....
• LEAD TEMPERATURE (During soldering):
At distances;? 1/32 in. (0.8 mm) from insulating wafer for 10 s ~"l( . . . . . . . . . . . . . . . . . .

VCBO

40

V

VCEO
VEBO
IC
IB
PT

20
2
0.4
0.4

V
V
A
A

2
See Fig. 14

W

-65 to 200

°c

230

°c

.. In accordance with JEDEC"registration data format JS-6 RDF-3.

11-71

75

2N4427 - - - - - - - - - - - - - - - - - - - - - - - - - -_ _ File No. 228
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl

= 25 oC.

TEST CONDITIONS
DC

DC
Voltage
(V)

Symbol

Characteristic

VeE

VEe

Vce

Limits

Current

Units

(rnA)
VCE

IE

Ie

IC

Min.

Max.

Collector-Cutoff Current:

With base open

12

ICEO

-

0

0.02
mA

With base-emitter junction

reverse-biased
TC

ICEV

= 150'C

40

-1.5

Collector-to-Base Breakdown

Voltage

lEBO

-

12

-1.5

Emitter-Cutoff Current

0.1

2
0

V(BR)CBC

5
0.1

mA
V

0.1

40

-

5

20

-

5

40

-

0

2

-

V

100

-

0.5

V

Collector-ta-Emitter Sustaining

Voltage:
With base open
resistance (RBE)

0

VCEO(SUS)

With external base-ta-emitter

= 10n

Emitter-to-Base Breakdown

Voltage
Collector-ta-Emitter
Saturation Voltage

VCER(SUS)
0.1

V(BR)EBO

20

VCE(sat)

V

-

hFE

5
5

360
100

5
10

200

Small·Signal, Short·Circuit
"Forward Current Transfer
Ratio ( f = 200 MHz)

Ihfe I

15

50

2.5

-

Collector-to-Base Capacitance
(f = 1 MHz)

Cob

12

-

4

POE

12
(VCCI

1

-

W

,Pi

12
(Vccl

-

0.1

W

~C

12
(VCC)

50

-

%

-

50

DC Forward Current

. Transfer Ratio
Magnitude of Common-Emitter

RF Power Output
Class C Amplifier,
Unneutralized ( f = 175 MHz,
PIE = 0.1 W, ~C? 50%1
See Fig. 2
Available Amplifier Signal
Input Power (f = 175 MHz,
POE = 1 W, 21N = 50 m
See Fig. 2
Collector Efficiency

(f = 175 MHz, POE = 1 W,
21N = 50 m See Fig. 2
"Thermal Resistance
Junction-to-Case

ROJC

.. In accordance with JEDEC registration data format JS-6 ROF-3.

76

0

pF

'C/W

2N4427

File No. 228
175 MHz OPERATION

COLLECTOR SUPPLY VOLTAGE 1Veel =12 V
FREQUENCY(f)-175 MHz
1.50

f

1.25

~

o
,2:.,.00

921.5-1159

...
~O.75
o

III

~O.5

.

0:0.25

20

40
RF

60

POWER

80

100

120

140

160

180

el. e2. C3. & C4: 3-15 pF trimmer, AReo 403 or equivalent
C5: 1,000 pF feedthrough
C6: 0.01 pF disc.
L,: 2 turns No.l6 wire, 3/16 in. (4.76 mm) ID.
1/4 in. 16.35 mm) long
L2: Ferrite choke, Z '" 450 n
L3: 2 turns NO.l6 wire, 1/4 in. 16.35 mm) 10.
1/4 in. (6.35 mmllong
L4: 4 turns No.16wire. 3/a·in. 19.52 mm) 10.

318 in.19.S2 mml long

INPUT (P,E)-mW

Fig.2-175·MHz rf amplifier circuit for power·output test.

Fig.l-Power output vs. power input.

470 MHz OPERATION

COLLECTOR SUPPLY VOLTAGE (VCc1=12 V
FREQUENCy{f)~70

MHz

0.4
~

!

0.3S

~

o

2: 0.3

~

+

5 0 .25
III
~ 0.2

.
0::

0.15

0.1
40

50

60

70

so

90

100

110

120

130

RF POWER INPUT (P'EI-ml'
92L.S-17'8

Fig.3- Power output vs. power input.

Vee =12V

921.$-1798

Ct. e2, Cs. & C6: 0.9-7 pF trimmer, ARea 400, or equivalent
C3: 1000 pF feedthrough
C4: 0.02 ~F disc .
Ll: 1 turn No.20 wire,3/l6 in. (4.76 mm) 10,
Space wire diameter
L2: 0.47 IJH Nvtronics Corp., or equivalent
L3: 2 turns No.1S wire. 1/4 in. (6.35 mm) ID.
Space wire diameter C.T.
L4: 2 turns No.20wire.3!16 in. (4.76 mm) 10.
Space wire diameter

Fig.4-470·MHz rf amplifier circuit.

77

File No. 228

2N4427

"I

~

"I

40

"='

N

~
~
I-

5000

20

4

~ 10

!

a

~

~

~

/

~l-

~
5

~ -10

~

50

100
FREQUENCY

500

If )-MHz

~

8

11

10
8

•

~

4

4

~

-15

2

j!

~
t; 1000

a

"'

~

.J

2

tl

5

~ -5

~

1

]l

.t:!.
10

...

I

E

20

4

c:

B'15

-; 30

L!!O.
~

COLLECTOR-TO-EMITTER VOLTAGE (VcEl,..15V
COLLECTOR CURRENT {IC)=25 mA
50 CASE TEMPERATURE (TC)=25°C

~

~~

1\

~~
'"

~

~~

«I
~

~

1l'

92LS-I799

~

100

50

500

FREQUENCY (tl-MHz

Fig.5-Series input impedance vs. frequency.

92LS-1800

Fig.6-Parallel output resistance & capacitance vs. frequency.

COLLECTOR-TO-EMITTER VOLTAGE (VCE) "15V
CASE TEMPERATURE (Te'" 2S"C

COLLECTOR-lO-EMITTER VOLTAGE (VCE)" 15 V
CASE TEMPERATURE (Tel" 2S·C

" 5000

NI

•

~

2\

i"

\

~

.---

~ 1000

!!!

•

~

6

~

-

g
~

i
50

FREQUENCY (f1-MHz

100

8

/,
'//1
./ ///

N

/A
.\oO~ ./#

~

u

z

~

4

E.1I1 l1.C

i:!

0-

~

-4""'-

"~
~

f..-

a

-8
-12

V

50

/1V"A7"

CO\,\..E.C~_ ..........--~
__ ~/ ~o
V

•

100

2

.

500

FREQUENCY (f)-MHz

78

•

.

2

100

'0a

92CS-13154R2

15~

18
160-

.J

~

"
12 ' \

I

10

iil

4

,,\-.

~

8
6

CO((
" ' " ecro
~ l1Clililie
Air tIc) = 25 mA
100

2

a
50

6

•

100

2

•

500

FREQUENCY (f)-MHz
92CS-131S1RI

Fig.9-Series input reactance vs. frequency.

r
i
I

.........

./

6

•

FREQUENCY(fJ-MHz

::

(;Illlll :.;.....- ..........
~~

-

(:tCJ •

~~

COLLECTOR-TO-EMITTER VOLTAGE (VCE)CASE TEMPERATURE ITel· 2S·C

CASE TEMPERATURE (Tc) .. 2S"C
I.

E
..!:!...

ClililieAlr

~

Fig.8-Parallel output resistance vs. frequency.

COLLECTOR-TO-EMITTER V01.TAGE (VCE). 15 V

12

7__

100

92CS-13150RJ

Fig.7-Series input resistance vs. frequency.

"I
r:::r

Co((

~r::",..,.~01i

2

500

10

~

92CS-13155RI

Fig.IO-Parallel output capacitance vs. frequency.

2N4427

File No. 228
COllECTOR SUPPLY VOLTAGE (Vee). 12 V

CASE TEMPERATURE

CASE TEWERATURE (TC)"2S· C

(Tj

)·25·C

100U

1.6
1.4

.

t:::: I::::--

;0

I

1.2

~

1.0

r- ~ ::::s ~
........

~

~ 0.8
0

~ ~ ~~."

'""'

0 .6

ffi

2 0 .4
~

t;

600

~~

..

:;'"

0
400

"

""~~".......'ti<,,~

P'

.q..~

-b

-

("~
C~J

......

400

~

~~

(f

-.....:::: ~
.'..- -

"e

~

~~

z 200
~

.0

200
300
FREQUENCY

=I;;-.

COl..lCCToIl_1'o

it

~!8

100

80

g

~~ ",

0.2
50

"'"I

~

500

600

o

)-MHz

20

40

60

80

100

CXl.LECTOR CURRENT tIcJ-mA

92LS-1757

92LS-18Ot

Fig. 12-Gain·bandwidth product vs. collector current.

Fig. 11- Power output vs. frequency.

FREQUENCY (I). l.IlHz
TEMPERATURE (Tc). 2$0 C

~E

~

~

i

6

III 4
;:I

II

~

2.

1

\

\

t---

2

e
o

10

20

30

-100

-50

COLLECTOR-TO-BASE VOLTAGECVcaJ-V

0

50
100
150
200
TEMPERATURE-·C
92CS-19173

Fig. 13-Variation of collector-to.JJase capacitance.

Fig.14~ Dissipation

derating curve.

TERMINAL CONNECTIONS
LEAD 1 - EMITTER
LEAD 2 -BAS.
LEAD 3 - COLLECTOR. CASE

79

File No. 217

DDJJ8LJD

RF Power Transistors

Solid State

Division

2N4440

Silicon N-P-N Overlay Transistor
For Class A, B, or C VHF/UHF
Military and Industrial Communications Equipment

Features:

• 5 W output min. at 400 MHz
• 6.5 W output typo at 225 MHz
JEDEC T().60

RCA·2N4440· is an epitaxial silicon ,,"p·n planar transistor
of the overlay emitter·electrode construction. It is intended
for Class AI!.. B, and C rf amplifier, multiplier, or oscillator
operation for military and industrial communications service
(175 to 400 MHz).,

emitter periphery for higher current or power, and a corre·
sponding decrease in emitter and collector areas for lower
input and output capacitances. The overlay structure thus
offers greater power output. gain, efficiency, frequency capa·
bility, and linearity.

In the overlay structure, a number of individual emitter sites

are connected in- parallel and used in conjunction with a
common collector region, When compared with other structures, this arrangement provides a substantial increase in

-Formerly RCA Dev. No. TA2875.

MAXIMUM RATINGS. Absolute-Maximum Values:
'COLLECTOR-TO-BASE VOLTAGE. - -. - - _. - .... - - - - - ... - - - - - 'COLLECTOR-TO-EMITIER VOLTAGE:
With base-emitter junction reverse-biased (VBE) = -1.5 V •• _ • , , ••••' __
• With base open
__ . , .. , .. , ... , . , , . , .. , , ... , .. _ , , , , ....
·EMITTER·TO-BASE VOLTAGE. _ . . . . . . . . . . . . . . . . __ .... , , __ _
'CONTINUOUS COLLECTOR CURRENT. _ . , , _ . ______ , _____ , , . ,

VCBO

65

VCEV

65
40

VCEO
VEBO
IC
IB

'CONTINUOUS BASE CURRENT
'TRANSISTOR DISSIPATION"':
~
At case temperatures up to 25°C
At case temperatures abo~e 25°C
'TEMPERATURE RANGE:
Storage and operating (iunction) . _ .... _ ........... _ ..... __ .. .
LEAD TEMPERATURE (During soldering):
At distances;> 1132 in. (0.8 mm) from insulating wafer for 10 s max

V
V

1.5
0.2

V
V
A
A

11.6

w

4

See Fig. 2

-65 to 200
230

°c
°c

*In accordance with JEDEC registration data
·Secondary breakdown considerations limit maximum de operating
conditions ...contact your RCA Representative for specific data.

80

6-72

File No. 217

2N4440

ELECTRICAL CHARACTERISTICS, At Case Temperature (TcJ = 25°C unless otherwise specified
TEST CONDITIONS
CHARACTERISTIC

SYMBOL
V CB

VOLTAGE

CURRENT

V de

mAde

VCE

V BE

'E

'B

LIMITS

'C

UNITS

MIN. MAX.

Collector Cutoff Current:
With base open
reverse-biasl:d

At TC '" 200°C

' CEV

Emitter Cutoff Current

'EBO

Collector-ta-Base
Breakdown Voltage

V,BRICBO

Collector-ta-Emitter
Breakdown Voltage:
With base-emitter junction

V'BR)CEV

0

30

'CED

With base-emitter junction

65

-1.5

30

-1.5

0.1

rnA

0.1

'-4

0.1

0

o to 200·

-1.5

rnA

65

V

65·'

V

reverse-biased
Emitter-ta-Base
Break'down VOltage

Collector-ta-Emitter
Sustaining Voltage:
With base open

With external base-toemitter resistance
IR BE ) = 100n
DC Forward Current
Transfer Ratio

0

0.1

VIBR)EBO

0

VCEO(susl

4

200·

40

200·

40

V

V
VCER(sus)

1350
125

hFE

Collector-ta-Emitter
Saturation Voltage

VCE"·')

Magnitude of CommonEmitter, Small-Signal,
Short-Circuit Forward

Ihfe l

50

28

10

200

250

V

125

Current Transfer Ratio

If

= 100 MHz)

Collector-to-Base Capacitance
If

=I

MHz!

Available Amplifier Signal
Input Power
IPo = 5 W. ZG = 50n.
f =400 MHz)

Cob

28

125

P;

Collector Circuit Efficiency
IPo = 5 W. ZG = son,
f = 400 MHz)

~C

Collector-to-Case Capacitance

C,

Thermal Resistance
lJunction-to-Casel

R8JC

12

pF

1.7

W

45

%

6

pF

15

°C/W

·Pulsed t~rough an inductor (25 mHI: duty factor&50%
•• Measured at a current where the breakdown voltage is a minimum
*In accordance with JEDEC registration data.

81

File No. 217

2N4440
g~iiE';~~:ERT~r"U~~ITl~~ .i~!-cis
RF POWER INPUT WATTS

(VCE )"29

= PIN

10

~ 9
i!I ~r--.. .......... -..;;; t--.
............ ............ -......;:: t.....~.0
-;:.
::>
............. ..............
-........::::
~
............. ","S
...

..
•

~

...

~

"~'"'' "

•

5

~0

..

"

2

"
I

100

•

2
•
OUTPUT FREQUENCY (four)..MHz

1000
CASE TEMPERATURE-·C
92CS-IS446

92LS-1571RI

Fig. 2-DissipBtion defllting chart

FIg. 1-Typlcs! power output.,.. frequency

~~~E~~~~A~~:~Tr+C)~i-r;.c(VCE)" 28

COLLECTOR SUPPLY VOLTAGE (VCcl-28 V
CASE TEMPERATURE {Tel" 25°C

15

.
i

l'zJ

J

12.5

/
,// ~
~c'·~~ ~
0! 1/32 in. (O.B mm) from insulating wafer for
10smax........................................ ..

IB
PT

A
70
See Fig. 2

W

-65 to 200

°c

230

°c

-In accordance with JEDEC registration data

92

6-72

File No. 268

2N5070

ELECTRICAL CHARACTERISTICS. At Case Temperature fTC) = 2ft' C unless otherwise specified
TEST CONDITIONS
CHARACTERISTIC

VeB
Collector Cutoff Current:
With base--emitter junction
reverse-biased
AtTC = 150· C
With emitter open
With base open

ICBO
ICEO

Emitter Cutoff Current

lEBO

Collector-to-Emitter
Sustaining Voltage:
With base-emitter junction
reverse-biased

ICEV

VCE

VBE

60
60
60
30

-1.5
-1.5

With base open

VCEO(sus)

With external base-to-emitter
resistance (RBE) = 5n

VCER(sus)

IE

IB

MAX_

-

10
10
10
5

rnA

-

10

rnA

200a

65

200a

30

-

200a

40

-

4

-

0
0

-1.5
0

UNITS
MIN.

IC

4

VCEV(su,)

LIMITS

CURRENT
mAde

VOLTAGE
Vde

SYMBOL

Emitter-ta-Base
Breakdown Voltage

V(BR)EBO

DC Forward Current
Transfer Ratio

hFE

5
5

3000
1000

10
20

100

Magnitude of Common-Emitter
Small-Signal Short-Circuit
Forward Current Transfer
Ratio (f = 50 MHz)

I hfel

15

1000

2

-

10

V

V

-

-

85

pF

Pi

-

1.25
PEP

W

Intermodulation Distortion
ZG = 50n. Po = 25 W(PEP)
fl = 30 MHz. f2 = 30.001 MHz

IMD

-

30

dB

Collector Efficiency
ZG = son. Po = 25 W(PEP)
fl a 30 MHz. f2 = 30.001 MHz

I7C

40

-

%

Thermal Resistance
Junction-to-Case

ROJC

-

2.5

·C/W

Output Capacitance (f = 1 MHz)

Cob

Available Amplifier
Signal Input Power
(See Fig. 8)
ZG = son. Po = 25 W(PEP)
fl = 30 MHz. f2 = 30.001 MHz

30

0

-In accordance with JEDEC registration data format
"Pulsed through a 25-mH Inductor: duty factor ~ 50%

93

File No. 268

2N5070
COLLECTOR SUPPLY VOLTAGE IVcc)' 28 V
FREQUENCIES (TWO·TONE). 30 MIIz. 30.001 MIIz

~

0

~

10

I

~~i~~~~~~~~;:~:C~U~~~~o~C3~ ~~~C

S
~

20

"2!5

30

~

1

7 THORDER-

40

IE

50

10

15

20

25

RF POWER OUTPUT IPOUT) -

~

35

40

wIPEP)
92LS-I87fRI

CASE TEMPERATURE (Tc) - OC
92L.S-r882R2

FIg. 1- Typ/callnrermodulation distortion

VB.

Fig. 2-Dlssipation derating chart.

rf power output.

I~ CASE TEr-'PERATURE(TCI"'OO·C
6
I
NOTE:TJS IS DETERMINED

cr.

_1_

~

!z

!

I"\.

41--- Ic MAX.

USE OF INFRARED

TrHNIQUE

~,OT -SPOT

2

B~
I

I--+---l~
TEMPERATURE

11-_-1__+_+-++-__"-,("TJ",s_,o_2_00"+C---l_H

~

.I---I--+-+-++---~~~~+---l-H

8

41---I---+-+-++---1--+-I-+-+~

~

61---I--+-+-++---1-~~---l-++4
VCEO

21-_-I__-+_+-++-__I--+~L;'M~IT~E04--+~
OJ

6

6

8 10

• 100

COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
OUTPUT POWER (POEI - W (PEP)
92CS-19139

Fig. 3-Safe operation with de forward bias.

t;

30~

I-

Z

92Ls-:seOltf

Fig.4-Typical col/ector efficiency
power output

'*'8.

rf

I

~

.!..

is
t;
~

:::11111111111111111111111111111111111

~20i5

~ ~

"

~~

;5

I
w

~ to!!

50

20

60

CASE TEMPERATURE lTC' _·C

COLLECTOR SUPPLY VOLTAGE (VCC) - V
92LS-IBB3R2

Fig.5-Typica/ rf power output and Intermodulation distortion vs. case temperature.

94

Fig. 6- TVpical rl power output vs. collector

supply voltage.

2N5070

File No. 268
1000

• COLLECTOR SUPPLY VOLTAGE (Vee'- 28V
CASE TEMPERATURE (TC)=25°C

4

2

/

- 40

:>

>-

:>

'"~

0:

10

10

20

40

60

10
15
20
25
30
35
COLLECTOR SUPPLY VOLTAGE IVcc)-V

BO

FREQUENCY (f)-MHz

92CS-19159

92LS-1835R2

Fig.2- Typical output power vs. collector supply voltage.

Fig. 1- Typical output power vs. frequency.

I~ CASE TEjPERATURE (Te) ;IOO·C
6
NOTE TJS IS DET,;ErtfRMINED
BY

COLLECTOR SUPPLY VOLTAGE 1VCC'.II24 V
CASE TEMPERATURE (TC)·25°C
30 FREQUENCY (t)·76 MHz

.\

BO
;II

'"I

25

~ 20

?O~

"'~

~

~

:>
0

70~
t

.

BOi:J

ili

<.>

50

15

t;
0:

~
40 ~

10

40

30

8

~

•-

i

2:

I-

USE OF INFRARED

r--..

Ic MAX

TrHNIQUE

",tifT -SPOT TEMPERATURE

,\TJSI '200'C

"'

§ ~
0:

:J

8

VCEO

-+__+-4-+-__~r--+~LlTMI~TE~D+-~~

2~__~____
0.1

6

o
INPUT POWER (PIEI-W

8

[0

COLlECTOR-TO-EMITTER VOLTAGE (VCEI-V
92CS-19160

Fig.3- Typical output power or collector efficiency vs.
input power at 76 MHz.

92CS-19139

Fig.4-Safe area for dc operation.

•

COLLECTOR SUPPLY VOLTAGE
(VcC)-24 V
OUTPUT POWER (PoEI-20W

13

..........
I

CA~E TE~PE"~TU"ElTcl"~O'C

~

~

Hi#IIIf1I:I~
45~

. . L'~ 70~VSIti!'-'!L-J£. i~

r!;,---,-'---'40':-'--'-----,50'=-'--'-----,oo'=-'

FREQUENCY (fl-MHz

92CS-19161

CASE TEMPERATURE (Tel - oc
92L.S-1882R~

Fig.5-RF Dissipation derating curve.

98

Fig.6-Typical broadband performance of 2N5071.

File No. 269

2N5071
C" C2 :

55-300 pF trimmer capacitor, AReo 427. or equivalent

C3 ' C4 :

32·250 pF trimmer capacitor, ARea 426, or equivalent

Cs,:

1000 pF feedthrough

C6 :

0: 1 ~ F 150V) electrolytic

L,:

1 turn, No.16 wire, 5/16 in. (7.93 mm) 10

L 2 :1 Ferroxcube No. VK200 01-38, or equivalent

La. L4 :

3 turns, No. 10 wire, 5/16 in. 17.93 mm) ID.
1/2 in. 112.7 mm) long

+VCC·24V

92L.S-1836R2

Note: Impedance measurements are made at transistor socket pins.

Fig.7-Narrowband rf amplifier circuit for power output test
(76-MHz operation).
Cl' C2 : 55-300 pF trimmer capacitor, AReo 427, or equivalent
C3 • Cs : O.471J F ceramic
C4 : 1000 pF feedthrough

L,:

Ferroxcube No. VK200 01-3B, or equivalent

T" T 2 • T3: 6 twisted pairs (10 turns/in.) of No. 28
wire connected in parallel. 3 112 turns
on Indiana General CF-l0B-Q2
ferrite core, or equivalent.

92C5-19162

T 4' T 5: 2 lengths of RE-196A/U cable connected in parallel.
7 turns on Indiana General CF-l11-Q1 ferrite core,
or equivalent.

Fig.8-Wideband rf amplifier circuit (30-to-76 MHz).

TERMINAL CONNECTIONS

Mounting Stud, Case, Pin No.1 - Emitter
Pin No.2 - Base
Pin No.3 - Collector

99

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 270

OOCD3LlD
Solid State

RF Power Transistors

Division

2N5090

High-Power Silicon N-P-N
Overlay Transistor
High-Gain Type for Class A, B, or C
Operation in VHF/UHF Circuits

Features:
• Maximum safe.area·of-operation curve
• 1.2 W (min.) output at 400 MHz (7.8 dB gain)
• 1.6W (typ.) output at 175 MHz (12 dB gain)
JEDECTO·60

• Hermetic stud·type package
• All electrodes isolated from stud

RCA·2N5090· is an epitaxial silicon n·p·n planar transistor
employing the RCA-developed "overlay" emitter·electrode
design. It is intended for rf amplifier. frequency·multiplier.
equipment.

connected in parallel by means of a diffused grid structure
and a deposited metal overlay. The overlay design provides a
very high emitter-periphery-to-emitter-,rea ratio and results
in low output capacitance, high rf·current·handling capa·
bility, and high power gain.

The overlay structure contains many isolated emitter sites

-Formerly RCA Dev. No.TA7146.

and oscillator service in vhf and uhf communications

,

1000

MAXIMUM RATINGS. Absolute-Maximum Values:
55

·COLLECTOR·TO·BASE VOLTAGE .• VCBO
COLLECTOR·TO·EMITTER
VOLTAGE:

*

With external base-to-emitter
resistance, ABe = 10n •........ VeER

55
30
3.5

With base open ..... , ...•.....•. VCEO
*EMITTER·TO·BASE VOLTAGE ..•. VEBO
'CONTINUOUS COLLECTOR
CURRENT. • • • • • • • • . . . . . . . . . . •
IC
'CONTINUOUS BASE CURRENT.....
IB
*TRANSISTOR DISSIPATION ....••
PT

0.4
0.4

V

v
V
V
A
A

At case temperatures up to 1oooe. . . . . . . . . . .
4
W
At case temperatures above 1 DOoC .. Derate linearly at 0.04 wflc
*TEMPERATURE RANGE:
Storage & Operating (Junction). . . •. . . . •. ..
'LEAD TEMPERATURE (During soldering):

-65 to +200

At distances~ 1/16 in. (1.58 mm) from
insulating wafer for 10 s max. .......•.....

°c

"EI
"

•

CASE TEMPERATURE (TC)C IOO·C
IC MAX.

4

"-

2

I-

ila:
a:

i'l
a:
0

t;

j

100

HOT SPOT TEMPERATURE

~/07

B-NOTE: TJS IS DETERMINED BY
USE OF INFRARED
SCANNING TECiiNIQUE

,-

V

4

veEo MAX.

8
2

10

2

6

B 10

2

COLLECTOR-TO-EMITTER VOLTAGE tVCE)-V
92CS-17671

230

°c

Fig. I-Safe area for de operation.

*In accordance with JEDEC registration data format JS-6 RDF-3.

100

9·74

File No. 270

2N5090

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl = 25 0 C
STATIC
TEST CONDlTlqNS
DC
CHARACTERISTIC

·

SYMBOL

Collector-Cutoff Current:
With base open

Collector
Voltage-V

DC
B,..
Voltage-V

VCE

VBE

IE

18

IC

MIN.

-1.5

30

-1.5

MAX.
0.02

0

55

UNITS

0.1

mA

ICEV

With base-emitter junction reverse-biased &
TC - 200°C
Emitter-Cutoff Current

0.1

3.5

IE80

Collector-ta-Base Breakdown Voltage

•

LIMITS

mA

28

ICEO

With base-emitter iunction reverse-biased

·

DC

Current

0.1

0

VIBRICBO

mA
V

55

Collector-la-Emitter Sustaining Voltage:
VCEO(sus)

30

VCER(SUS)

55'

With base-open

V

With external base-to-emitter resistance
IRBEI-lOn

··

Emitter-la-Base Breakdown Voltage

VIBRIEBO

Collector-ta-Emitter Saturation Voltage

VCE(sat)

DC Forward-Current
Transfer Ratio

20

1.0

100
360
50

hFE

Thermal Resistance (Junction-Ia-Casel

V

3.5

0.1

V

200

10

25

ROJC

°C/W

apulsed through a 25-mH inductor; duty factor'" 0.05%.

DYNAMIC
TEST CONDITIONS

DC Collector
Output
Input
. Collector
Frequency
SYMBOL
Voltage
Power (PoEI Power (PI E) Current IIC)
If)
r.:"L"IM:,:I:,:T"S-:;-i UNITS
V
W
W
rnA
MHz
MIN. MAX.

CHARACTER ISTIC

·
•
•

·

Power Output (Class C amplifier,
unneutralized) (See Fig. 21

POE

Vec - 28

1.2

w

Gain-Bandwidth Product

IT

VeE - 15

50

500

MHz

Ihlel

VeE - 15

50

2.5

Magnitude of Common Emitter.
Small-Signal, Short-Circuit ForwardCurrent Transfer Ratio
Available Amplifier Signal Input Power

Pi

1.2

Collector Efficiency

TIC

1.2

CollectQr-to-Base Capacitance

Cobo

400

0.2

400

0.2

w

3.5

pF

45

V CB - 30

%

*In accordance With JEDGC registration data format JS-6 RDF-3.

Cl: 0.9-7 pF, ARCO 400, or equivalent

C2. C3: 1.5-20 pF, ARCO 402, or equivalent

VCC ,,+28V

92SS-3620R2

Fig.2-400·MHz rf amplifier for output power test.

C4: 1,000 pF, feedthrough type
Ll: 2 turns No.18 wire, % in. (6.35 mm) 10,
1IS in_ (3.17 mml long
L2: 3 turns No.16 wire, % in. (6.35 mm) 10,
3/8 in. 19.52 mml long
L3: 0.1 ~H. RFC

L4: 2 turns No.18 wire, 1/8 in. (3.17 mmllO,
1/8 in. 13.17 mml long

101

File No. 270

2N5090

,

:zso c

CASE TEMPERATURE (Tel-

COLLECTOR· TQ.EMITTER VOLTAGE (VeE) '" 28

v

10

1
~

2.5

i

-

I U

L

;;;;;;;;::::1-- h.. '100 ....... '<"

LO--

~

-

f ' r-.... ~,

I--

1.5

r-...

1-0...

.FINPfIT

~Oftl~'-.. '" i'--

0.5

'.6

f-

0
100

200

3l1li

600

FREQUSCCY (I)-1Mb

15
20
25
30
COLLECTOR SUPPLY VOLTAGE (Vcc~V

10

92$5-3611112

Fig.3- Typical output power vs. frequency.

Fig.4-Typical output power vs. col/ector supply voltage.

CASE TEMPERATURE (Te) "' ZSO C

'"'"I

COLLECTOR·YO·E'UTTER VOLTAGE (VeEI- 15 v

CASE TEMPERATURE (Tel" 2SO C

-!.

V
BOO

VA ~'~'~.7;;;;
~

I;

g600

~~

f--

.~"
"<~~~
I-- ~
""~J.~

s. ~

IE
l!:

51 400

'..."

!i!

c::1

"i'"
A.
11

"

~
~

Z2

13:::: t:....

COlLeCT
OR CURRENT (Ie) '" 25 "'"

10

g

;

200

,...
50 ..

J>' ~joo

;:: IB

:J:

16

o

60

40

20

14
50

100

80

100

COLLECTOR OJRRENT (lc)-mA

500

....,.,,,,

FREQUENCY (f)-MHz
92CS-I"':J4R2

Fig.5- Typical gain·bandwidth product vs. col/ector current.

Fig. 6- Typical series input re~istance vs. frequency.

COLLECTOR·TO-EMITTER VOLTAGE (VeE) = 15 V

COLLECTOR·TO-EMIT1'I:R VOLTAGE (VeE)· 15 Y

12

c::

..L

CASE TEMP~A.TURE (Tel" 250 C

IJ

B

l

~~

•

.!...

~

~

....... ~\cl .~ f!f:::::

0

~

-.1- I--

~

-B~

-12

t

I§

~~~
~c.1rfo
~

~r;..--

I:::::: '"'"Y

§

J; '\f

'

COLLECTOR CURRENT (Ie) • 2S mA
CASE TEMPERAlURE (Tc)· 2SO c

.!...

b:::l!ilr::"

LL;15-~-~

50

311

FREQUEH:CY (f)-MHz

500

311

c::

25~
e

20

1O~

15

15

10

10

5
0
·5

.---1
'

~

J;

:a

~

§

I

I....50

it;

!;

I,..-

·15
100

35

r-

R'~')

25

·10

Fig.7- Typical series input reactance vs. frequency.

102

40
92SS-l619R2

1000

..'"

15

100

500

FREQUENCY (f)-MH.

Fig.8- Typical series input resistance and reactance vs.
frequency.

2N5090

File No. 270
COLLECTOR-TO·EMITlER VOLTAGE (Vee)
CASE TEMPERATURE (Tel" 25 0 c

c:

=

COLLECTOR-lO-EMITTER VOLTAGE (VeE). IS V

15 V

~~C~'~SE~T~E~'P~E~"A~T~U"~E~(T~c~)·~'~S'~C~__r-~__4--}-+-+~

I

,0'
'"'" ,

~
..t

I
!;
~

il
~

~

~

··
z

,
,

103 50=
~

75,IDO

10~4\-+-+-+~-----4----~~--4-~-+-+~

\.

~O~C'a

~C"

~~""?'=F

r.b,,~

·

~ COLLECTOR CURRENT (Ie) = 25 OR 100 rnA

...

~

T~

z

10'

50

500

100

100

50

FREQUENCY CO-MHz

500
FREQUENCY (f)-M"J.
92Ss-J626R2

92SS·3625Rl

Fig.9- Typical parallel output resistance vs. frequency.

Fig. 10-Typical parallel output capacitance vs. frequency.

':..
I

FREQUENCY (f) • ,,,Hz
8 CASE TEMPERATURE (Tc)-ZSoC

iB

w

~

6 \

~

11

~

*g~

4

\
\

r--

0:

10'

2

1.0
50

'

100

10
20
COLLECTOR-lO-BASE VOLTAGE (Vcs)-V

500
FREQUENCY (I)-MHz

30
92CS-13157R2

Fig. 11- Typical parallel output resistance and capacitance vs.
frequency.

Fig. 12- Typical variation of collector-to-base capacitance.
with collector·to-base Voltage.

TERMINAL CONNECTIONS
Pin No.1 - Emitter
Pin No.2 - Base
Pin No.3 ..... Collector
Cas':!-Isolated

103

File No. 279

OO(]5LJD

RF Power Transistors

Solid State
Division

2N5102

High- Power Silicon N-P-N
Overlay Transistor
For Class C, AM Operation in VHF Circuits
Features:

JEDECTO·60

• 15 W output min. at 136 MHz

TERMINAL CONNECTIONS

•

For 24 V aircraft communication

•
•
•

Load mismatch protection
High voltage ratings
Emitter grounded to case

Case, Pin No.1 - Emitter
Pin No.2 - Base
Pin No.3 - Collector

RCA·2N5102· is an epitaxial silicon n·p-n planar transistor of
the overlay emitter-electrode construction. It is especially designed with integral ballast resistors in each emitter site to provide high power as a class C rf amplifier for vhf aircraft commbnications service (108 to 150 MHz) with amplitude mod·
ulation and 24-volt power supply.
The transistor features complete ·protection against any load
mismatch. Each unit is tested at 118 MHz with full modulation and no current limiting for all load-mismatch conditions

In the overlay structure, a number of individual emitter sites
are connected in parallel and used in conjunction with a common collector region_ When compared with other structures,
this arrangement provides a substantial increase in emitter
periphery for higher current or power, and a corresponding
decrease in emitter and collector areas for lower input and
output capacitances. The overlay structure thus offers greater
power output, gain efficiency, frequency capability, and
linearity_

from short-circuit to open-circuit.
-Formerly RCA Dev. No. TA2791

MAXIMUM RATINGS, Absolute-Maximum Values:
"COLLECTOR-TO-BASE VOLTAGE _. - - - - - - __ - __________________ . _. _ __ __ __ _ _ __

VCBO

90

V

COLLECTOR-TO-EMITTER VOLTAGE:
With base-emitter junction reverse-biased, VBE = -1.5 V ____ .. ________________ . ___ . VCEV
"With external base-to-emitter resistance, RBE = 5 n . ________________ . ____________ _
VCER
"EMITTER-TO-BASE VOLTAGE _. ______ . ____ . _______________________ . _ . ______ _
VEBO
"CONTINUOUS COLLECTOR CURRENT _.. __________________ . _________________ _
IC
PEAK COLLECTOR CURRENT __________________ . ___ . __________ . __________ . __

100
50
4
3_3

V
V
V

"CONTINUOUS BASE CURRENT _. _. - - - - - - - - - - _. - - - - - - _. - - - - - - - - _. ___ - - - _. _ __ _ _
"TRANSISTOR DISSIPATION:
At case temperatures up to 25°C _. __ . __ ... ____________________ . _____ ... ______ _
At case temperatures above 25°C ___________________ . ____ . _ . __________________ _

10

IB
PT

A
A
A

70
See Fig_ 6

W

"TEMPERATURE RANGE:
Storage & Operating (Junction) _________ . __________________ . _ . _______ . _______ _

-65 to 200

°c

"LEAD TEMPERATURE (During soldering):
At distances .. 1132 in_ (0_8 mm) from insulating wafer for 10 s max _________________ .

230

°c

"'In accordance with JEDEC registration data.

104

8-72

File No. 279

2N5102

ELECTRICAL CHARACTERISTICS, At ease

Temperature ITci = 25"C unless otherwise specified
TEST CONDITIONS

CHARACTERISTIC

VOLTAGE
Vde

SYMBOL
VCB

·
·

·

·

·
·
·

ICEV

83
30

-1.5
-1.5

ICER

50

lEBO

-4

VCEV(SUS)

-1.5

IE

IB

UNITS

IC

MIN.

-

MAX.

20
10

,

-

mA

10

-

10

SODa

100

-

200a

50

-

200a

35

-

0

4

-

mA

Collector-ta-Emitter

Sustaining Voltage:

resistance (RBE)
With base open

·

VBE

Emitter Cutoff Current

With base-emitter junction
reverse biased
With external base-ta-emitter

·

VCE

Collector Cutoff Current:
With base-emitter junction
reverse biased
At TC = 150°C
With external base-ta-emitter
resistance (RBE) = 5

n

LIMITS

CURRENT
mAde

=5 n

V
VCER(SUS)
VCEO(sUS)

0

Emitter-to-Base Breakdown
Voltage

V(BR)EBO

DC Forward Current Transfer Ratio

hFE

4
4

3A
O.SA

10
10

100

Magnitude of Common· Emitter,
Small-Signal, Short-Circuit Forward
Current Transfer Ratio
(f = ISO MHz)

Ihfe l

24

500

1

-

Output Capacitance (f

= 1 MHz)

Cob

10

30

0

V

-

-

85

pF

S

W

Available Amplifier Signal Input
Power b
(Po = 15 W, ZG = SO
f = 136 MHz)

Pi

-

Collector Circuit Efficiency
(PIE = 6W, ZG =
f ~ 136MHz)

'Ic

70

-

%

Modulation c
(f = 118 MHz)

M

24
(VCC)

80

-

%

Load Mismatchd
(f = 118 MHz)

LM

24
(VCC)

Dynamic Input Impedance (See Fig.
10) (PIE = S W, f = 150 MHz)

ZIN

24
(VCC)

n,

son,

Thermal Resistance
(Junction to Case)

1100

Will not be
damaged
1.7 + j 2.S
(typ)

-

ROJC

2,S

n
°C/W

·10 accordance with JEDEC registration data.

• Pulsed through a 9-mH inductor; duty factor'" 50%.
bUnmodulated carrier.

Vee modulation'" 100%: M;;;)

2 (PAM - PeAR)

PeAR

x 100%.

cSee Figs. 9 & 10. Carrier Power, PeAR- "" 15 W;

dUnder conditions of footnote c. the transistor is subjected to
all conditions of load mismatch from short-circuit to open-circuit.

105

2N5102

File No. 279
CASE TEMPERATURE {TC)=250 C
RF POWER INPUT (PIN)=6 W
30 FREQUENCY= 136 MHz

I ~~

[ I , ' •••

. .'

g

,,~U

IS

~

o

••••••

~

~I·: •• I .....

10

''''::
10

90

100

110

110

130

150

140

15

25

35

40

COLLECTOR- TO- EMITTER VOLTAGE (VCE)-V

92SS-J665

OUTPUT FREQUENCY (faUll-MHz
92S5-3&04

Fig. 2- Typical rf power output vs. collectorto-emitter voltage.

Fig. 1- Typical power output vs. frequency.

CASE ;~~~~R.:""T.U:M~i~~k·J~~ iAGE (VCE)' 24 V
RF POWER INPUT (PIN)-'.

..

COLLECTOR SUPPLY VOLTAGE {VCC)-24 V
CASE TEMPERATURE (TC)=250 C
OPERATING FREQUENCY- 136 MHz

."

::
I::" ''=' ... '''..
I'~:

::.c ••••

I: "c'e

.,

I.', .::••.

.::: ....
::.~ ...

.."
151

10

8

OUTPUT FREQUENCY (faUll-MHz

RF POWER INPUT (PIN)- W
91SS·3666

Fig. 3- Typical collector efficiency vs.
frequency.

Fig. 4- Typical power output VS. power input.

;c"'.

120

FREQUENCY 1 MHz
CASE TEMPERATURE (T) 250

c

100

~ 100

~
~

Ii1

ISO

<

=='

;

6

o
o

10

15

20

25

30

35

40

.1(

·50

I

COLLECTOR· TO-BASE VOLTAGE (VCBl-V
92LS-1219Rl

Fig. 5- Typical variation of collector-fo-base

capacitance.

106

Fig. 6-Dissipation derating curve.

File No. 279 - - - - - - - - - - - - - - - . , . - - - - - - - - -_ _ __

2N5102

10 CASE TE!"PERATURE ITe) "IOO·C

1

6

NOTE:TJS IS DET~EmRMINED
BY

I

.1.

41-- Ie

USE OF INFRARED

MA".

"

TrHNIOUE

15
WATTS

CARRIER

~,OT -SPOT

2

POWER

TEMPERATURE

,\TJS) -200·C

!,~==~=====+==+=~+=====~,~==~~~~
6.~---+----+-_+_4-+-----+-~r_~~_+~

4~--_+-----+--+_~+-----~-+_+--~_+~

veEO

2r_---i-----t--t-~t-----r_-t~LI,M~IT=ED~_+~
6

8 10

4

6

12V,

MODULATED

121/,

24V,

MODULATED

MODULATED

Upward modulation only.

0.1
4

12V.

MODULATED

Fig. 8-Block diagram of a typical narrowband aircraft radio

8100

transmitter chain.

COLLECTOR-TO-EMITTER VOLTAGE IVCE'-V
92CS-19139

Fig. 7-SaftJ operation area with de forward

Vee

bias.

RF POWER

Cl,CS:
C2. C7:
C3:
C4:

METER
OR

VARIABLE

LOAD

MISMATCH
CIRCUIT

Cs:
R:

IZLS-I27&R2

Fig. 9-Block diagram for modulation test.

3·35 pF
7·100 pF
O.l.F
O.OS.F
1.000 pF
, n wire wound

-

Ll:

9ZLS-1275HZ

31/4 turns, 118 in. (3.17 mm) dia.
No. 14 wire

L.t,

L2:
L3:
LS:

2 turns, 3/8 in. 19.52 mm) dis. No. 14 wire
4 turns, 3/8 in. (9.52 mm) dia. No. 14 wire
350 n Ferrite choke. Ferro"cube
# VK200 01·38

Fig., to-RF amplifier circuit for power output test.

12 Y. MODULATED
(SEE NOTE)

Cl, C3. C5. C7. C16: 3-35 pF
~.

~.

L7:

4 turns, 1/4 in. (6.35 mm)die., No. 16 wire

C4, C6, Ca. C17: 8-60 pF

L6:

RF choke, 1.0.H

Cg. Cll, C13: 0.03.F

La:

wire-wound resistor. R

Cl0, C12. C14: 1.000 pF

L,0:

C15: O.I.F
Ll, Lg:
L2. lS:

= 2.4 ohms

3 turns. 1/8 in. (3.17 mm) dia., No. 14 wire

L,,:

2 turns, 1/2 in. (12.7 mm) die .. No. 16 wire

3turns,l/4 in. (6.35 mm) die., No. 16 wire

L12:

4 turns, 1/2 in. (12.7 mm) die., No. 16 wire

Ferrite choke, Z =450 ohms. Ferroxcube

L13:

350 n ferrite choke, Ferroxcube # VK200 01·38

# VK200 01-48
L3:

RF choke, 1.5.H
Fig. 1t

-

Note: Upward modulation only.

Circuit diagram of B typical narrowband"alrcraft radio tranimitter ch,ain.

107

FileNo. 281

RF Power Transistors

OCl(]8LJD
Solid State
Division

2N5109

Silicon N-P-N Overlay Transistor
High Gain for Line Amplifiers in
CATV and MATV Equipment

Features:
• High gain·bandwidth product
• Large dynamic range
• Low distortion

. JEDEC TO·39
.'

• low noise'

RCA·2N5109* .is an epitaxial silicon n·p·n planar transistor
employing "overlay" emitter electrode constructioFl. It is
especially 'de~igned to provide large dynamic range, low dis·
tortion, and low noise as a wideband amplifier into the
vhf range.

A high gain·bandwidth product over a wide range of collec·
tor current makes the 2N5109 ideally suited for such ap·
plications as CATV and MATV.line amplifiers and low·
noise linear amplifiers.
*Former1v RCA Dev. No. TA2800.

MAXIMUM RATINGS,Absolute·Maximum Values:
• COLLECTOR·TO·BASE VOLTAGE ...... V CBO
COLLECTOR·TO·EMITTER VOLTAGE:

With base open ..................... VCEO
With external base-to-emitter resistance
•
•
•
•

IRBE) = 10 n .... .' ...............
EMITTER·TO·BASE VOLTAGE .•........
CONTINUOUS COLLECTOR CURRENT..•
CONTINUOUS BASE CURRENT ........
TRANSISTOR DISSIPATION: •........

At case temperature up to 7SoC ....... .
At case temperature above 75°C ...... .

VCER
V EBO
IC
IB
PT

40

V

20

V

40

3

V
V

0.4
0.4

A
A'

2.5
W
See Fig. 10

• TEMPERATURE RANGE:

Storage and operating (Junction) ....... .
* LEAD TEMPERATURE (During Soldering):
At distance!' 1/32 in. (0.8 mm) from
the seating. plane for 10 5 max

·65 to +200

°c

>

230°C

40

20

60

80

100

COLLECTOR CURRE.NT ILc)-mA

* In accordance with JEDEC registration data

Fig. I-Gain-bandwidth

VS.

120

140

92LS-2168R2

collector current for type 2N5109.

11·73

108

File No. 281 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5109
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 25°C Unless Otherwise Specified
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Collector- Cutoff Current:
With base open

DC
COLLECTOR OR BASE
VOLTAGE
V
vCB
VBE
VCE

'CEO

DC
CURRENT

LIMITS

UNITS

ImA'

'e

IC

MIN. MAX.

15

-

20

"A

35
15

-

5
5

rnA

-

0.1

rnA

With base-emitter junction reversebiased

'CEV

-1.5
-1.5

TC~ 1500C

Emitter-Cutoff Current

-3

'EBO

Collector-to-Base Breakdown Voltage
Collector-ta-Emitter
Sustaining Voltage:
With external base-ta-emitter

0

VIBR'CBO

0.1

40

-

V

5

40

-

V

5

20
3

-

V

0
100

-

0.5

V

-

3.5

pF

VCERlsus,a

resistance (ABEl = 10 n

With base open

VCEOlsus'

Emitter-to-Base Breakdown Voltage
Collector-ta-Emitter
Saturation Voltage IIR = 10 rnA'

Collector-to-Base Capacitance
I'

= 1 MHz)

0.1

VIBR'EBO
VCElsat)
Ccb

DC Forward-Current Transfer Ratio
Small-Signal Common-Emitter
Forward Current Transfer Ratio

15
15
5

50
360

40
5

120

hFE

25
50
100

4.8
6
4.8

-

h'e

15
15
15

15

50

6

-

50

-

0.1

I' = 200 MHz'
Magnitude of Common-Emitter
Small-Signal Forward
Current Transfer Ratio

0

I I
h'e

V

-

I' = 200 MHz)
Available Amplifier Signal
Input Power (See Fig. 91

Pi

(Pout: 1.26 rnW, Source
Impedance

=

50

n, f

==

15
IVCCI

rnW

200MHzI

Voltage Gain, Wideband, 50 to 216

GVE

15

50

11

dB

CM

15

50

-57Ityp.,

dB

GPE

15

10

11

dB

NF

15

10

MHz ISee Fig. 8.1
Cross Modulation @54 dBmVb

Output ISee Fig. 14.1
Power Gain, Narrowband

(' = 200 MHz,
P,N =-10dBrn'
Noise Figure (f :::: 200 MHzl

ISee Fig. 9.'
Thermal Resistance
(Junction-to-Casel

-

R8JC

apulsed through a 25 mH inductor: duty factor = 50%

311YP.'

50

dB
°C/W

b 0 dBmV :::: 1 millivolt,

* In accordance With JEDEC registration data

109

2N51 09 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 281

j50

-j50
Fig.2-lnput reflection coefficient (Slle)

92Sl-4424
lIS.

frequency for type 2N5109.

COLLECTOR.lO-EMITTER VOlTS IVee) = 15
CASE TEMPERATURE (Tel. 2S o C
ZG=ZL=SDR

..
~

8
u:

ib ,.

e
ffi

il;

~ 15

!I
O!

5

FREQUENCY (f) - GHI

Fig.3-Magnitude of common-emitter forward transfer coefficient (S21e) vs. frequency for type 2N5109.

110

FREQUENCY (I) - GHI

Fig.4-Angle of common-emitter forward transfer coefficient
(S21e) lIS. frequency for type 2N5109.

File No. 281 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5109

j50

j25
COLLECTOR· TO, EMITTER VOLTS (VCE) = 1S
CASE TEMPERATURE = 250 C
ZG = ZL = SDn

j250

-j250

-j25
-j50

9255-4425

Fig.5-0utput reflection coefficient (S22ei vs. frequency for type 2N5109.

FREQUENCY (I) _ GHz

Flg.6-Magnitude of common-emitter, reverse transfer coefficient (S'2ei for type 2N5109.

FREQUENCY (0 _ GHI

Fig.l-Angle of common-emitter reverse transfer coefficient
(Sl2ei vs. frequency for type 2N5109.

111

2N5109 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 281

,$j>
••

4

L2

DETAIL
OF TRANSFORMER

TI
92L5-1828R2

+ Vee
C1, C2, C3, C5:
C4:
C6:C7:
C8:

0.002 ~F

92.LS-1829A4'

1500 pF
18 pF

Cs. C7 : 1,000 pFI disc ceramic

CS: 0.01 JJF disc ceramic
L,: 4·1/2 turns, No. 22 wire, 3/16 in. (4.76 mm) I.D.
L4 : 3-1/2 turns, No. 22 wire, 3{16 in. 14.76 mm) 1.0.
L2_ L3: 0.82 ~H RFC
R 1 : 2400,2 W, carbon

bifilar wound on
"Indiana General"

Rl: 4.7 kn, %. W

cor. No. CF-102-Q1,

n, II W

or equivalent.

Fig.8-RF amplifier for voltage-gain testing of type 2N5109.

e 2, C3 : 1.0-30 pF, mica trimmer, AReO or equivalent
C4 : 1.0-20 pF disc ceramic
CS : 10,000 pF disc ceramic

R3: 330s;l, 1 W
R4: 200s;l,IIW
T 1: 4 turns No. 30 wire

0.03~F

R2: 6.8

elf

Fig.9-200-MHz amplifier for power·gain and noise-figure testing of type 2N5109.
1000

•

.

4

E

I
u

CASE TEMPERATURE (TC 1 = 100°C

Ic

(MAX) CONTINUOUS

r---

2

H

1"'<

...

i:i 100

.

a
0:

8

0:

~

4

8

2

HOT-SPOT
TEMPERATURE
(TJS1=200°C

NOTE;
TJS IS DETERMINED BY USE OF
INFRARED SCANNING TECHNIQUES

10

100
TEM PERATURE 1TC)-OC

f'
92CS-19174

Fig.l0-Dissipation derating curve for
type 2N5109.

8 10

2

24

8 100

COLLECTOR-TO-EMITTER VOLTAGE (VCE) -

v

92CS-22853

Fig. II-Maximum operating area for type 2N5109.

45 COLLECTOR CURRENT' Ie}· 5 mA
CASE TEMPERATURE ITc )-25° C

z
"~~i

40

I

VeER

'"

35

~>

0:1

"'~ i 30
iii'

S$!
, "" 25

I

IITTIk .::'1::" ::;: !G.~I ':.:::

13

",

'\

'"0:

'"
"Z

~

~

~

;;

1,\

12

6

;,.

~

0:"

]'::i--

~g

VeEO

~~

.,
~

~

fi!

t-

10

~

I

2

15
10

468

100

468

IK

EXTERNAL BASE-TO-EMITTER RESISTANCE (RBEl-

n

10K
92LS-2165H'1

Fig. 12-Sustaining voltage vs. base-to-emitter resistance for
type 2N5109.

112

20

40

60

80

~~"'2

COLLECTOR CURRENT-n'lA

Fig. 13-Power gain and noise figure vs. collector current for
type 2N5109.

File No. 281 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5109

a Provides 20 db isolation between generators
b 50-220 MHz with detector output
Hewlett-Packard HP 608 0 or equivalent
d Ballantine 861 or equivalent
C

Fig. 14- Test set-up for measuring cross modulation in type
2N5109.

CROSS·MODULATION TEST PROCEDURE:

1. Set up equipment as shown in Fig. 14.
2. Set generator 1 to 150 MHz modulated 30% by 1,000
Hertz, and tune field strength meter to 150 MHz.
3. Adjust output level of generator 1 to give rated output
from the amplifier under test.
4. Adjust potentiometer and AC voltmeter for a convenient

level. This level then corresponds to 100% cross modula·
tion.

5. Remove modulation. Readjust output level of generator 1
if necessary, to obtain the AC voltmeter "100% level". Do
not readjust generator 1 during the following steps.
6, Set generator 2 to 210 MHz modulated 30% by 1,000
Hertz and tune field strength meter to 210 MHz,
7. Adjust output level of generator 2 to give rated output of
the amplifier; i.e., the AC voltmeter indicates the" 100%
level".
8. Tune field strength meter to 150 MHz CW and read the
AC voltmeter (a change of the AC voltmeter scale may be
nece~-;ary).

9. Calculate

percentage of cross modulation by comparing

the reading of step 8 to the "100% level".

TERMINAL CONNECTIONS
Lead No.1 - Emitter

Lead No.2 - Base
Lead No.3 - Collector
Case - Collector

113

_______________________________

OOCI8LJD

RF Power Transistors

Solid State
Division

2N5179

RCA-2N5179* is a double-diffused epitaxial
planar transistor of the silicon n-p-n type. It is
extremely useful in low-noise tuned-amplifier and
converter applications at UHF frequencies, and as
an oscillator up to 500 MHz.
The 2N5179 utilizes a hermetically sealed fourlead JEDEC TO-72 package. All active elements of
the transistor are insulated from the case, which
may be grounded by means of the fourth lead in
applications requiring minimum feedback capacitance, shielding of the device, or both.

* Formerly

~ileNo,288

Dev. No. TA7319.

SILICON N-P-N
EPITAXIAL PLANAR
TRANSISTOR
For UHF Applications in Military,
Communications, and Industrial Equipment

JEDEC TO-72

• high gain-bandwidth product-l000MHz min.
• hermetically sealed TO-72 four-lead metal package

Maximum Ratings, Absolute-Maximum Values:

• low leakage current
COLLECTOR-TO-BASE
VOLTAGE, VeDo

20 max.

V

• high power gain as neutralized. amplifier _
G,,, = lSdB min. at 200MHz

COLLECTOR-TO-EMITTER
VOLTAGE, VeEo

12 max.

V

• high power output as UHF oscillator20mW typo at SOOMHz

V

• low noise figure -

EMITTER-TO-BASE
VOLTAGE, VEDO
COLLECTOR CURRENT, Ie
TRANSISTOR DISSIPATION, PT:
For operation with heat sink:
At case
i up to 25'C
temperatures** ~ above 25°0
For operation at ambient
temperatures:
'
At ambient
i up to· 25'C
temperatures 1above 25°0
TEMPERATURE RANGE:
Storage.and Operating (Junction)

2.5 max.
50 max.

rnA

300 max.
mW
Derate at 1.71mW/'C

200 max.
mW
Derate at l.14mW / 'C

NF = 4.SdB max. at 200MHz
• low collector-to-base time constantfb'C c = 14ps max.
• high reliabilityproduction lots of RCA-2NS179 are subjected to and
meet the minimum mEtchanical, environmental, and
life-test requirements of the basic MILITARY specification MIL-S-19S00. See page 5 for a description of the Group A and Group B Tests.
COMMON-EMITTER CIRCUIT, BASE INPUT,

-65 to +200

LEAD TEMPERATURE
(During Soldering) :
At distances ;;:: 1/32" from seating
surface for 10 seconds max. . ... 265 max.

'C

'C

.... Measured at center of seating surface.

10

15

20

25

COLLECTOR MILLIAMPERES

30

(Icl

35
9ZC$-14169

Fig. I - Small·Signal Beta Characteristic for Type 2N51 79

8·67

114

File No. 288

______

~~

_________________________________________ 2N5179

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAJ

~ 250 C

Unless Otherwise Specified

TEST CONDITIONS

Characteristics

Symbols

Frequency
f

MHz

Coliector·Cutoff Current
At TA = 1500 C

DC
DC
Collector- Collector·

to-Base

Voltage
Vee

V

to·Emitter
Voltage
VeE

V

15
15

leno

DC
Emitter
Current

LIMITS
DC

Collector

DC

Current

Base
Current

IE

Ie

Ie

mA

rnA

rnA

Type
2NS179

Units

Min. Typ. Max.

0
0

0.02
I I'A

Coliector·to·Base
Breakdown Voltage

V(nR)cno

Coliector·to·Emitter
Sustaining Voltage

V cEo(susl

Emitter·to-Base
Breakdown Voltage

V(UR)EBO

Coliector·to·Emitter
Saturation Voltage

VeE(sa!)

10

I

0.4

V

Base·to·Emitter
Saturation Voltage

VIIE(satl

10

I

I

V

Static Forward Current·
Transfer Ratio
Magnitude of Small·Signal
Forward Current· Transfer
Ratioa

0

0.001
3

-0.01

hn;

Ihfe I

100
I kHz

Coliector·to·Base
Feedback Capacitance b

Ccb

0.1 to I

Common·Base Input
Capacitancec(VEB= 0.5V)

C;b

0.1 to I

Coliector·to·Base
Time Constanta

rb'C c

31.9

Small·Signal Power Gain
in Neutralized, Common·
Emitter Amplifier Circuit.
(See Fig. 2)

Gpe

200

Power Output in Common·
Emitter Oscilator Cir·
cuitc (See Fig. 3)

Po

>500

Noise Figurea

NF

200

0

0

20

V

12

V

2.5

V

I

3

25

70

250

6
6

5
2

9
25

14
90

20
300

10

0

0.7
0

6

12

10

2 pF

2

3

7

14 ps

5

15

21

dB

-12
6

I pF

20
1.5

mW

3

4.5 dB

-

• Lead No.4(case) grounded; Rg = 12Sfl
b Three·terminal

C

lead No.4 (case) floating.

measurement of the collector-ta-base capacitance

with the case and emitter leads connected to the guard terminal.

115

2N5179 - - - -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 288
DC COMMON

r
~sr

0.02

SOURCE

NOTE, (Neutralization Procedureh 181 Connect a 5fl.1I rf voltmeter to

TYPE TYPE
IN3I~ IN!19~

TO

+----t+-...........,

$oll

2·10 LOAD

"ll

1£'

2·10

~~~e~~lg~to~:p~t 2t~·~~J. siN:la~o~~~~a\~e 1:~n:ra~~lio ar:e ~~~~: :~~

the rf voltm.ter to the output of the amplifier, as shown above.
Icl Apply VEE and Vee, and adjust the generator output to provide
an amplifier output of 5mV. Idl Tune C" C" and C, for maximum
amplifier output, readjusting the generator output, as required, to
maintain an output of 5mV from the amplifier.. lei Interchange the
connections to the signal generator and the rf voltmeter. If) With

~~I~~ieg! t~fnaalmr~~~e~ i~~ic~t~ono~7~~e t:~~I~;;~ ~pu\~e I~m~~:i::i

steps lal, fbi, Icl, and Id) to determine if retuning is necessary.

'2.

e'N

a = Type 2N5179

10K

2-10

.!~

12r

'T-'

Fig. 2 - Neutralized Amplifier Circuit Used to Measure

~ + cc Power Gain and Noise Figure at 200MHz for Type 2N5' 79

-VEE

92CS 14753

Note 1- Coaxial·Line output network consisting of:
2 General Radio Type 874 TEE or equivalent
I General Radio Type 874-020 Adjustable Stub or equivalent
I General Radio Type 874-LA Adjustable Line or equivalent
I General Radio Type 874·WN3 Short.. ircuit termination or equivalen'
Note 2 - RFC = 0.2.H Ohmite # 2·460 or equivalent
Note 3 - Lead Number 4 (casel floating
L, - 2 turns # 16AWG wire, % inch 00, II< inch long
Q = 2N5179

NOTE 2

AFe

NOTE

3

Vee

Fig. 3 - Circuit Used to Meosure 500MHz Oscillator
Power Output for Type 2N5179

92CS-12849R2

TWO-PORT ADMITTANCE Iyl PARAMETERS AS FUNCTIONS OF
COLLECTOR CURRENT (lei FOR RCA TYPE 2N5179

15

~

COMMON-EMITTER CIRCUIT, BASE INPUT;
OUTPUT SHORT-CIRCUITED.
FREQUENCY (OK 200 MHz
AMBIENT TEMPERATURE (TAI-25"C

COMMON-EMITTER CIRCUIT;
INPUT SHORT-CIRCUITED.
FREQUENCY (')"200 MHz
AMBIENT TEMPERATURE (TA)-2S"C

.

H++tl±±l.tP.:~~~1';

.' o..t.~& t-t+
c.~ol'-\~c.~'

<)\6

COLLECTOR-TOEMITTER VOLTS (VCE)=6

CP'-\.~o\.~s

b.o

VCE-S

i.

o

5

~

~

W

COLLECTOR MILLIAMPERES Ue)

o

5

10

15

COLLECTOR MILLIAMPERES (Ie)

92C5-14732

Fig. 4 -Input Admittance (y,,)

116

92C5-14133

Fig. 5 - Output Admittance (y",)

File No. 288 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5179

TWO-PORT ADMITTANCE Iy) PARAMETERS AS FUNCTIONS OF
COLLECTOR CURRENT lIel FOR RCA TYPE 2N5179
NOTE-gr. IS NEGLIGIBLE AT THIS FREQUENCY (200 MHz

++++COMM~N-EMITTER

CIRCUIT;
INPUT SHORT-CIRCUITED.
FREQUENCY (f I- 200 MHt
AMBIENT TEMPERATURE (TA)-2S"c

COMMON-EMITTER CIRCUIT, BASE INPUT;
OUTPUT SHORT-CIRCUITED.
FREQUENCY (f)· 200 MHz
•
AMBIENT TEMPERATURE (TAl- 25 C

COLLECTOR - TO EMITTER VOLTS l VeEI .~
-100

br.

-1.5

o

5

10

15

a

20

5

COLLECTOR MILLIAMPERES Uel

10
15
COLLECTOR MILLIAMPERES Uel

20
92C5-14734

92C5-14735

Fig. 7 - Reverse Transadmittance (y,,.J

Fig. 6 - Forward Transadmittance (Ylel

TWO-PORT ADMITTANCE Iy) PARAMETERS AS FUNCTIONS OF
FREQUENCY If) FOR RCA TYPE 2N5179

2_

~--+--+~~~~---+--~-++++H

10

6
a 100
FREQUENCY (fl -

2

2

10

MHz
92CS-14131

1000
92CS-14730

Fig. 8 - Input Admittance IYI,1

Fig. 9 - Output Admittance Iy",l
COMMON-EMITTER CIRCUIl! INPUT SHORT-CIRCUITED.
COLLECTOR-lO-EMITTER VOL T5 (VeE)·-4

I CIRCUIT. BASE
I

, ,

••

100
FREQUENCY (f)-MHz

II II

COLLECTOR MILLIAMPERES lIe I '" 1.5
TEMPERATURE (TAl .. 25- C

ILlS(Vr<'-_

I IIIII
NOTE: !Ire 15 NEGLIGIBLE AT FREQUENCIES UP TO 500 MHz
01---1-1-1--4-1- brel+l---j-+-++-H-H-I

~NT

j'::2i,-:c

}~

w"

~ i -III---Ir--+-+-++f+f+--...........
--.:~rl-H.....j.-I-t.j.j
"
U
gl

u--z,~--I-~-+~4-~H---+--+-~-++++J

ffitj
.. z

~~

~~-3i~--I--+-++-HHYf+---+--j-H-+++-H
~~

15",

. .,

~O-41---I-+-++-HHYf+---+--j--.:H-+++.j.j
10

..

6

8

100
FREQUENCY (fl-MHz

2.

Fig. 10 - Forward Transadmittance CYt!')

1000

92CS-I"'729

92C5-14728

Fig. 1 J - Reverse Transodmittonce (Y,fO)

117

2N5179. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 288

GROUP A AND GROUP B QUALITY SAMPLING TESTS

100%

FACTORY
TESTS

CUSTOMER

TEST DESCRIPTION
GROUP A TESTS
Subgroup 1.

Visual.and Mechanical Examination ................................... .

5%

Subgroup 2.

Electrical ........................................................................... .

10%

Subgroup 1.

Physical Dimensions ...........................................................,

20%

Subgroup 2.

Solderability, Temperature Cycling,

GROUPB TESTS

Thermal Shock, Moisture Resistance ..................................... .
Shock, Vibration Fatigue, Vibration
Variable Frequency, Constant Acceleration ......................... .

20%

Subgroup 4.

Terminal Strength ............................................................... .

20%

Subgroup 5.

Salt Atmosphere ............................................................... .

20%

Subgroup 6.

High-Temperature Life, Nan·Operating
(TA = 200 0 CI .................................................................. ..

10%

Subgroup 7.

Steady-State:Operatian Life
(PI> = 300mW, TA = 25°CI ............................................. .

10%

TERMINAL CONNECTIONS

LEAD 1 - EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR
LEAD 4 - CONNECTED TO CASE

118

20%

Subgroup 3.

File No. 289

D\1OBLJD
Solid State

RF Power Transistors

Division

2N5180
Silicon N-P-N
Epitaxial Planar Transistor
For VHF Applications in
Industrial and Commercial Equipment

Features:
a High gain·bandwidth product
a Low noise figure
• High unneutralized power gain

a Hermetically sealed four-lead metal package
JEDECTO-72

H-1299

All active elements insulated from case

II

a Low collector-ta-base feedback

The 2N5180 utilizes a hermetically sealed four-lead metal

RCA-2N5180' is an epitaxial planar transistor of the silicon
n-p-n type with characteristics which make it extremely useful as a general-purpose RF amplifier at vhf frequencies_

package in which all active elements of the transistor are in-

sulated from the case. The case may be grounded by means
of a fourth lead in applications requiring minimum feedback
capacitance, ,shieldinQ of the device, or both.

These characteristics include an exceptionally low noise figure

at high frequencies, low leakage current, and a high gainbandwidth product.

* Formerly Dev. No. TA 7303.

MAXIMUM RATINGS, Absolute-Maximum Values:
*COLLECTOR-TO-BASE VOLTAGE

..

VCBO

'COLLECTOR-TO-EMITTER VOLTAGE.
*EMITTER-TO-BASE VOLTAGE

VCEO
VEBO
IC

'CONTINUOUS COLLECTOR CURRENT
·TRANSISTOR DISSIPATION:
At ambient temperatures up to 250C
At ambient temperatures above 250C
*TEMPERATURE RANGE:
Storage & Operating (Junction) . . .

30
15
2
limited by dissipation

V
V
V

PT
180

mW

See Fig.2
.

.

.

.

.

.

.

.

'LEAD TEMPERATURE (During Soldering):
At distances~ 1/32 in. (0:8 mm) from seating plane for 10 s max.

.

-65 to 175

°C

265

°c

* In accordance with JEDEC registration data format JS-9 RDF-l.

11-73

119

2N5180

File No. 289

ELECTRICAL CHARACTERISTICS, at TA = 25°C

TEST CONDITIONS

Characteristics

Symbols

Frequency
f
MHz

*
*

Coliector·Cutoff Current
Coliector·to·Base
Breakdown Voltage

BVcno

*

Coliector·to·Emitter
Breakdown Voltage

BVcEO

*

Emitter·to·Base
Breakdown Voltage

BVERO

DC
DC
Collector Collector·
DC
to·Base to·Emitter Emitter
Voltage Voltage Current
Vcn
Vc~:
IE
V

V

mA

DC
Collector
Current

Type
2N5180

a

Units

Ie
mA

Min.

Typ.

a

8

leBO

LIMITS

Max.

0.5

pA

0.001

30

V

0.001

15

V

a

2

V

8

2

20

8

2

S.5

·0.001
c

*

Static Forward·Current
Transfer Ratio

*

Magnitude of Small·Signal
Forward·Current
Transfer Ratio

Ih'e Ia

100

*

Coliector·to·Base
Feedback Capacitance

Ccbb

0.1 to 1

*

Small·Signal, Common·
Emitter Power Gain in
Unneutralized Amplifier
Circuit (See Fig. 1)

GpE a

200

10

2

VHF Noise Figure
(See Fig. 1)

NFa
NFa.c

200
SO

8
8

2
1

Time Constant

rb'C c

31.9

*

Real Part of Common·
Emitter Small·Signal
Short·Circuit Input
Impedance

Ra(hie)

200

10

*

Bandwidth

BW

200

10

hn:

200
9

a

8

12

17

1

pF

19

dB

4.5

dB
dB

2.5

, Collector· Base
8

aFourth lead (case) grounded.
bCc;b is a three terminal measurement of the collector·lo-base capacitance
with the emitter and case connected to the guard termina1.

* In accordance with JEDEC registration data format JS·g RDF·l.

120

2

-

2

60

-

240

n

2

650

-

1700

MHi

·2

16.

CSource Resistance, R$=400 ohms.

ps

File No. 289 _ _ _ _ _ _ _ _ _ _ _ _ _ _......,_ _ _ _ _ _ _ _ _ _ _ __

2N5180

r.-~----~1~OUTPUT
Cs

=

92CS-12753

C 1, C. = 510pF
C7 = 2300pF
C3, C" = 2-25pF
Co = 10pF
Rl = 2000 ohms
Q=2N5180
Ll = 'AI Turn #14 Formvar e center tapped;
length = 2 inches
C~,

= 'AI Turn #14 Formvar e ;
length = 1'A1 inches
La = IJlH RF choke
Source (Generator) Resistance
Rs = 50 ohms
Load Resistance RL = 50 ohms
e Trademark, Shawinidan Products Corporation.
L~

Fig. 1 - 200 MHz pOlll/er gain and noise figure test circuit for type 2N5180

92CS 14717

Fig.2 - Rating chart for type 2N5180

2
4
6
8
COLLECTOR MILLIAMPERES (Ie)

10
92CS-1478S

Fig.3 - Typical small-signal beta characteristics
for type 2N5180

121

2N5180 ____________________________~--------------------- File No. 289
TYPICAL y PARAMETER CHARACTERISTICS

12

10
COLLECTOR MILLIAMPERES tIel

14
92CS 14781

92CS 14784

Fig.4 -Input admittance (Yiel vs collector current fie'

10

Fig.5 - Output admittance (Yael

liS

collector current (IcJ

10

COLLECTOR MilLIAMPERES (Ie)

COLLECTOR MILLIAMPERES (Ie)

92CS 14712

92CS 14780

Fig.6 - Rellefse transadmittance ty rel vs collector
current (I,)

Fig.7 - Forward tfllnsadmittance (Y;6'

current fI,J

LlJJ VS' collBctor

TERMINAL CONNECTIONS
Lead 1 Lead 2 Lead 3 Lead 4 -

92CS 14782

Fig.S - Forward fran.admittance ty111'
frequency (fl

122

mJ

vs,

Emitter
Base
Collector
Connected to case

File No. 296 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

DUOBLJD
Solid State

RF Power Transistors

Division

2N5189
High-Voltage Silicon N-P-N
Switching Transistor
For Core·Driver and Line·Driver Service in
Data·Processing Equipment and Other Critical
Industrial and Military Applications
Features:

Low-profile T0-39

•
•
•
•

Excellent power handling capability
High switching speeds at high currents
High breakdown·voltage capabilities
High reliability

RCA-2N5189- is a double-diffused epitaxial pranar transistor
of the silicon n-p-n type featuring high breakdown voltages,
low saturation voltages, and high switching speeds over a wide
range of collector current.
It is especially useful in switching applications of high-perform·
ance computers and in other critical industrial applications

where high·voltage and high·current-handling capabilities and

TERMINAL CONNECTIONS
LEAQ 1 - EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR. CASE

short "turn-off" and "turn-on" times are important design fea-

tures. These features also make the 2N5189 particularly useful
in class C circuits for mobile and portable equipment.
The 2N5189 is hermetically sealed in a metal package like the
JEDEC TO-39 but with a reduced height (0.180 in. max.,
0.160 in. min.) and 0.5 in. min. leads.
-Formerly RCA Oev. No. TA7322.

MAXIMUM RATINGS, Absolute Maximum Values:
·COLLECTOR-TO·BASE VOLTAGE ................................
COLLECTOR· TO-EMITTER VOLTAGE:
• With base shorted to emitter .................................... .
With base open .............................................. .
'EMITTER-TO-BASE VOLTAGE ................................. .
'CONTINUOUS COLLECTOR CURRENT
TRANSISTOR DISSIPATION:
At case temperatures up to 25° C
At case temperatures above 25°C, derate linearly .................... .
• At ambient temperatures up to 25°C .................. '........... .
• At ambient temperatures above 25°C, derate linearly ................ .
"TEMPERATURE RANGE:
Storage and operating (Junction) ................................ .
·LEAD TEMPERATURE (During soldering):
At distances ~ 1/32 in. (0.8 mm) from seating plane for 10 s max.

*

VCBO

60

V

VCES
VCEO
VEBO
IC
PT

55
35
5
2

V
V
V
A

5
28.5
4.57

W
mWfC
W
mWfC

-65 to +200

°c

265

°c

O.B

In accordance with JEOEC registration data format JS-S/ROF·1.

11-72

123

2N5189

File No. 296

ELECTRICAL CHARACTERISTICS. At Ambient Temperature (TAl = 25°C
TEST CONDITIONS
CHARACTERISTIC

..

SYMBOL

VOLTAGE
Vdc
V CB

V CE

LIMITS

CURRENT
Adc
IC

2N5189

18

UNITS

MIN •

MAX.

-

100

-

100

Collector Cutoff Current:

With emitter open

60

ICBO

IJA

With emitter-base
junction shorted

ICES

..
.. Collector-ta-Emitter

Emitter Cutoff Current(V EB -5V)
Breakdown Voltage

* Collector-ta-Emitter
Saturation Voltage

.. Base-ta-Emitter Saturation
Voltage

..

55

lEBO

0

-

.10

IJA

V(BR)CEO

0.D1

35

-'

V

veE (sat)

1"

0.1

-

1

V

1"

0.1

-

1.5

V

30
15

-

2.5

-

-

15

-

40

-

70

VBE(sat}

DC Forward Current
hFE

Transfer Ratio
Common-Emitter. Small-Signal,
Short-Circuit. Forward

Current Transfer Ratio
(I "100 MHz)

hfe

Common-Base, Open-Circuit

* Switching Time (lBI=O.l A):
Turn-on
(td + t r )

tON

Turn-off
(t s + tf)

tOFF

n

~

10

0.05

35

,b

IC

IB2

1

-

1

*In accordance with JEDEC registration data format JS-8/RDF-7.
b Pulsed: Pulse duration

0.'"
O.5 a

10

Cob

Output Capacitance
(f = 1 MHzi
.

1
1
1

-0.1

pF

ns

8pulsed:- Pulse duration'" 300 IlS; duty factor' :s;;;; 2%~

400 IlS; duty factor:::;: 0.03.

o.9V

INPUT PULSE
t r 6 1ns
PULSE DURATION~150ns
DUTY FACTOR~2%

-.oU t

loon

INPUl: PULSE

tf~lns

92CS-13486R2

Fig_ 1-Circuit used to measure turn-on time.

124

0.'
,..F

VIN

V'N
loon
o-~VVlr---+-L

_

PULSE DURATlON~150ns­
DUTY FACTOR~2%

130n

5n
.
S2CS-13487R2

Fig. 2-Circuit used to measure turn-off time.

File No. 296 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5189

TYPICAL CHARACTERISTICS
COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE (TAl = 25°C

COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE ITAI • 25·C

~ 60

I

I

~ 40

1~ 40

i

i;

~

~.

+

...

>f
~
......
'"

~

20

20

z

'i'

U>

~

o

o

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (Ie/ISII

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT {Ie/IBtl

92C5-1'895

Fig. 3 - Rise Time vs 'a/'. I

COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE (TAl = 25°C
COLLECTOR AMPERES (Iel-I

COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE ITAI ,. 25°C

ISO

COLLECTOR AMPERES Ilel • I

I
;

RATIO OF "ON" COLLECTOR CURRENT TO
"TURN OFF" BASE CURRENT IIe/le21" 30

100

'J2CS-L38'36

Fig. 4 - Turn·On Time vs lallBI

RATIO OF "ON" COLLECTOR CURRENT TO
"TURN OFF" BASE CURRENT (IC/IB2)~30

I
w

...~

:>

20

o.
o.

i

...... 20

50

o

5

o

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT lIe I ISll

Fig. 5 - Turn·Off Time vs la/IBI

12

;
I

92CS-13889

Fig. 6 - Storage Time vs 'a/'BI

COMMON-BASE CIRCUIT,EMITTER OPEN.
AMBIENT TEMPERATURE (TAl. 2.5°C

COMMON-BASE CIRCUIT, COLLECTOR
OPEN'Ji
D
AMBIENT TEMPERATURE (TAI=2S C

,"

~~~~¥~~C~J~kE~i (~~f .a

FREQUENCY 1f1=0.1 Me/s

J

~ 60

'"
~
"

.

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (Ie/lsil

92C5-13891

~

2

~
~

/0

:i

COLLECTOR CU~RENT (IC1=O"-TT~'
,

~
a:

10

--k
g

.

1+ -

,

.tt-

50

...
"

~
~

40

~z
30

o

10

20

30

40

COLLECTOR-TO-BASE VOLTS (Vee)
92CS 14750

Fig. 7 - Output Capacitance vs Collector·to-Base Voltage

o

I
2
,
EMITTER-TO-BASE VOL T5 (VEB)
92CS-13906

Fig. 8 - Input Capacitance vs EmiHer-to-Base Voltage

125

2N5189 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 296

TYPICAL CHARACTERISTICS
lao.

='1:~rvl't6WR C'Acurr, .ASE INPUT,

•

AMBIENT TEMPERATURE (T.)-25-e
COLLECTOR MILWAM'ERES (I )-50

~

I••

ilDo
;7
175

ffi

~

~w

g

r--..

,-'

0
2

10

. ••

4

2

••

..

•

2

100
1000
BASE-fO-EMITnR RESISTANCE (RSEI-n

•
25

50

100

7~

125

150

AMBIENT TEMPERATURE (TA) - ·C
92CS-14747

Fig. 10 - Collector·te-Emitter Breakdown Valtage vs
Base-to-EmiHer Resistance
COMMON-EMITTER CIRCUIT, BASE INPUT.
RATIO OF COLLECTOR CURRENT
TO BASE CURRENT (Ie I Ie1 • 10

~1;2
w

!:;
0
>

~

~

0.01.

T

~

..

V

2

8

92CS-14145

>

~

0.1.

10000

COMMON-EMITTER CIRCUIT,BASE INPUT.
AMBIENT TEMPERATURE ITA) .. 25"C
1.5 OlLECTOR MILLIAMPERES Uel -1000'

U)

/

~ •

V(ilR)CEO·3S

Fig. 9 - Collector· Cutoff Current vs Ambient Temperature

~

/

2

::l

2.

S

.
j

~! 50
~

4

:II

\

t->!:.,.....

"0
~>

••

w
w

1\

/

2

10

.

OIU

COLLECTOR-TO-BASE YOLTS(Ycal-3O
EMITTER CURRENT (11:')-0

4

1.1

i'l

=

k:::i:~I1~ l~1'o

!i

I

"~

0.' _

~\t.II~

~t.¥ft.""

---

lli

::

~

~

0.8_

~

0.7

20

!5

30

6

7 69

RATIO OF ·ON" COLLECTOR CURRENT TO

CO ....ON-EMITTER CIRCUIT, BASE INPUT.

-

,,/'

z-' .0
w:>

II!~

..,.,

ao~

.. !S

12

ei

.

........
~

!:!ffi

a~
"'~

"

40

t-

20
4

••

~

? ••

"-

2

.......

u_' -+.:J O-~
o""t.c.~?
~

0

1000

'''' '-Ii

;Q
~

<'"

• • •

...

:r~

2

" ~~

~~

~~

j~

T ••

t2CS-l47~

'\

\'

,,\.

'

I

"~
1000

/

"

a

z~

"'''

~lOla

............~

..-

-'~
,,~

0
•

!. I JJ II J

",\~~ER Yot rS
.....,

~_"\

~i

l'

100
COLLECTOR MILLIAMPERES (leI

4

~

Fig. 13 - Static Farward Current·Transfer Ratio
(Pulsed) vs Ie

126

•

Fig. 12 - Base·to·Emitter Saturation Voltage vs Ie

...z

:t1l"t.l"fl!)·-5~·c
~,,~ ~t.~
"1" . .

~

.0

?

COMMON-EMITTER CIRCUIT, BASE INPUT.
AMBIENT TEMPERATURE (TAJ : 25°C
FREQUENCY (f) '" 100 Me/s

COLLECTOR-TO-EMITTER VOLTS (VeE)-'

,iii

••

4

92CS-J4746

Fig. II - Collector·to·EmiHer Soturation Voltage vs le/IBI

t- w

•

COLLECTOR MILLIAMPERES (IC)

"TURN ON" BASE CURRENT (le/IBII

60

"

..........

2

100

Iz.y
\Q9.-

I--""

;;! 0.6
10

~

..... '-". -'!I

.

I

0

2

10

,

4

"7

eo

100

\. , '\

.......
2

COLLECTOR MILLIAMPERES (IC)

,

4

,,

789

1000
92CS-13908RI

Fig. 14 - Small·Signal Forward Current·Transfel
Ratio vs Ie

File No. 313,,_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

[Kl(]5L}[]

Power Transistors

Solid State
Division

2N5262
Silicon N-P-N High-Speed
Switching Transistor
For Memory·Driver Service in Data·Processing Equipment and
Other Critical Industrial Applications
Features:

"Low-Profile T0-39"
H-1546

• Fast switching at lA:
ton = 30 ns max.
toft = 60 ns max.
a High voltage ratings
• High power dissipation ratings
" High dc beta at lA - 25 min.

" Low saturation voltage at 1 A:
0.5 V typo
m Maximum-area-of-operation curves

for dc and pulse operation
" Hermetic "Iow·profile TO·39" package
" Meets MI L·S·19500 specifications

RCA·2N5262· is a silicon n-p-n, epitaxial planar transistor with
characteristics which make it exceptionally desirable for highspeed, high-voltage, high-current switching applications. In
addition, the 2N5262 features very short turn·on and turn·off

specification MIL·S-19500, and is hermetically sealed in a
metal "Iow·profile JEDEC TO-39" package.

times and low saturation voltages.

"2-1/2D" coincident-current and word-organized magnetic·

It is also controlled for

freedom from second breakdown under both forward·bias and
reverse-bias conditions, when operated within specified maximum ratings.

RCA-2N5262 is primarily if'tended for use as a drivor for
memory systems, and in the other critical industrial applications requiring switching of large currents through indue·

tive loads.

The 2N5262 meets the requirements of the basic military
•

Formerly RCA Dev. No. TA7238.

Maximum Ratings,Absolute·Maximum Values
• COLU,CTOR-TO-BASE VOLTAGE . .
• COLLECTOR-TO-EMITIER VOLTAGE:
With base open. . . . . .
With emitter·base shorted. .
* EMITTER·TO-BASE VOLTAGE.
COLLECTOR CURRENT:
* Continuous.. . . . .
Instantaneous (See FigA) .
• TRANSISTOR DISSIPATION:
At case temperatures up to 250C.
At case temperatures above 250C
At ambient temperatures up to 25°C
At ambient temperatures above 250C
* TEMPERATURE RANGE:
Storage and operating (Junction) . . . . .

VCBO

V

50
60
5

v

2
3

A

V
V

A

W
4
Derate linearly 22.8 mW/oC
0.8
W
Derate linearly 4.57 mW/oC

.

.

. .

. .

• LEAD TEMPERATURE (During soldering):
At distance 2 1/32 in. (O.B mm) from'seating plane for lOs max.

*

75

-65 to 200
265

In accordance with JEDEC registration data format JS-8/R OF-7.

11·72

127

_~

2N5262

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313

ELECTRICAL CHARACTERISTICS. At Ambient Temperature (TAI- 25"C
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAGE
V de
VCE

*

Collector Cutoff
Current:
With emitter-ta-base
junction shorted

ICES

With emitter open

ICBO

VCB

LIMITS

CURRENT
A de
IC

IE

2N5262
MIN.
MAX.

IB

60

75

UNITS

-

10

-

100

-

100

JlA

50

-

V

-

0.8

V

V

JlA

Emitter-to-Base Cutoff
Curren' (V EB - 5VI

lEBO

*

Collector-ta-Emitter
Breakdown Voltage

V(BR)CEO

0.01

*

Collector-ta-Emitter
Saturation Voltage

VCE(s.,)

1·

0.1

*

Base-ta-Emitter
Saturation Voltage

VBE(S.')

1·

0.1

*

DC Forward Current

Transfer Ratio

-

1.4

hFE

1
1
1

0.1·
0.5·
lb

35
40
25

-

hie

10

0.05

2.5

-

-

15

Common-Emitter, SmallSignal, Short-Circuit,
Forward Current
Transfer Ratio
(I - 100 MHz)

Common-Base, OpenCircuit Output
Capacitance
II -1 MHz)

*

,

10

Cob

IC

IBl

IB2

'ON

1

0.1

-

-

30

'OFF

1

0.1

-0.1

-

60

Switching Time:
Turn-on
(td + 'r)

0

Turn-off
("+'1)

*

-

a Pulsed: Pulse duration

In accordance with JEDEC registration data format JS-8/RDF-7.

O.9V

V,N

0.1

vlN

loon

INPUT PULSE
Ir!!!Olns
PULSE DURATION~ 150 ns
OUTY FACTOR:S 2

"'0

,..F

130n

-2.lJ 15n'~

U-~"'VV'v--t--!

loon

INPUT PULSE
_
PULSE OURATION~150ns­
DUTY FACTOR ~ 2 "to

~~Ins

92C5-20690

Fig.1-Circuit used to measure
turn·on time.

128

ns

= 300 IJS; duty factor ~2%,

b Pulsed: Pulse duration::; 400}.lS. duty factor:::; 0.03.

n

pF

Vee 6V

Fig.2-Circuit used to measure
turn-off time.

File No. 313 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5262

,

10, CASE TEMPERATURE (Te': 2SoC

,
,
,,

u
to

Ie MAX. (PULSED)

Ie JAX.

I

~

PULSE OPERATION
SINGLE NONAEPETITIVE PULSE

~

~
Iili~

le~NT:NJO~Sl

''o~

'
11-.
~~

~J-

,

il'

"-< ,
'"

~

DC OPERATION.;'
THERMALLY LIMITED
(SLOPE~-I)

1""-\ \

r--

\ .\

0.1

•,

2

,

\\
IS/bLIMI~~

,
0,01

QI

,

, ,,

,

, ,

.I

Ve~o MAX.

10

G 8100

4

COLLECTOR-TO-EMITTER VOLTS (VeE)
92CS-I4870R2

92CS-14868RI

Fig.3-Derating curves.

500

CASe: TEMPERATURE (Tc)-25°c

!:! 400

c(

COMMON-EMITTER CIRCUIT.
COLLECTOR-Ta-EMITTER VOLTS (VCEI • 2

I

U

i"

Fig.4-Safe area of operation.

6

~'"

,iii
....
~
z-'

~~ \<''A

300

",=>

q

~i

'\~

~5

'\~-'

'3

"g'"

200

0

.,

"'!<
It",

I'~~

~ffi

~~

~~
-,

-,

10

V

-,

103

10

-I

10

10

\"0
" ,,1\

V

~g 40

1'~

i'

10

50

au:.

0

8
100
~

--....,

r'\

V

:tIlIlEI"f'" • -55'0

~E".~E-II'"
~~ 30
",,,.\I\E-~
'".... -r20
,
, , 7.'1I
4

100

3

4

.

G 7

8 9

1000

COLLECTOR MILLIAMPERES n::CI

PULSE DURATION-SECONDS

92C5-13902

92C5-14871

Fig.5- Typical second-breakdown characteristics.

Fig. 6-Typical dc be:a characteristics.

COMMON-EMITTER CIRCUIT.

COMMON-EMITTER CIRCUIT.
AMBIENT TEMPERATURE ITAI • 25·C

AMBIENT TEMPERATURE {TAl" 25°C
FREQUENCY (f) ,. 100 MHz

ni~ w,

4

!z

:::::
~ H.:c.~..,0~-~~O-E-"'\'
u_'
O\.o~c.~~
~1
;Q ~:::;;
~5 2

-''''

~~
~-<

~~

0

.......... t-..~

,,/~~ '\

1\ 1\
"" I'--I\. I"
I'--

0.,.

!;?z

oJ'

,I

~("C
::5f).~

I

t'----

-<

iii

,

0
10

3

4

56769

,

100
COLLECTOR MILLIAMPERES (Ie)

Fig.7- Typical small-signal

beta charac.teristics.

3

,

10
5 (,7 B 9

1000

20

30

RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (Ie IIOII

92CS-1390BR3

Fig.8- Typical saturationvoltage characteristics.

129

.2N5262 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313

r'"
i

COMMON-EMITTER CIRCUIT,
AMBIENT TEMPERATURE (TA) • 2!5°C

~

I
..~

.
CODI2E. OR
III lAMp· , ES'!J:c)' ,/000

~

i

~
iii

5 0

ao

COMMON-EMITTER CIRCUIT.

RATIO OF COLLECTOR CURRENT
TO BASE CURRENT (Ie /,Ie1

-'0

1.2

I

1.1

I
0.• -

"IAIIIEII1

• _lIfI'j?
~Il~l~
1EIA~~

i.,

3

0.8

~

0.7-

n.

4

. ..

RATIO OF TRANSISTOR hFE TO CIRCUIT hFE

L;

~

~
J..-" -----

•

7 ••

2

I......

100
COLLECTOR MILLIAMPERES (,Ie)

\Cli!-"

.•

,

1 8 9

1000
92CS-I39OIRI

92CS-13900

Fig.9- Tvpical characteristics of saturation
vo/mge vs. ratio of transistor beta

Fig. to-Typical base-to-emitter saturation
voltage VI. collector current.

to circuit bera.

COMMON-EMITTER CIRCUIT.
INDUCTIVE LOAD

100:1= COMMON-EMITTER CIRCUIT.

z

125

Ii
~
~"'.:)IOO
'"15
15S'

~~~LEENlTci:M~~~~!~=~R~~J(;~;5~
BVCES'"4 V

.......

'\

lOT 7"
i5~

1\

r-- ~~5V

~~
,0

.. > 50

~

8
-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

BASE-TO-EMITTER VOLTS (VeE)
92CS-13898RI

Fig. t 1- Tvpical transfer characteristics.

25

0
10

4 6 8 102

4 6 8 103

Fig. t 2- Typical collector-to-emitter breakdown voltage VI. resistance.

AMBIENT TEMPERATURE (TA =2SoC
FREQUENCY (f)~ I MHz

EMITTER CURRENT I1E)=O

TERMINAL CONNECTIONS
LEAD 1-EMmER
LEAD 2-BASE
LEAD 3- COLLECTOR, CASE

o

10

20

30

40

COLLECTOR - TO- BASE VOLTS (Vee)
92CS-14867RI

Fig.'3- Typical output capacitance VB.
collector-to-baSIJ voltage.

130

4 6 8 1if

SASE-TO-EMITTER RESISTANCE (RSEJ-tl 92CS-14869Rr

No. 313 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5262

~ile

AMBIENT TEMPERATURE tTAI'"25""C
FREQUENCY (r). I MHz

COMMON-EMITTER CIRCUIT,
AMBIENT TEMPERATURE (TAl

COLLECTOR CURRENT (Icl=O

~60

II

2~·C

~

i\!

..8

ISO

'"

~ 20
I-

"''"
'"
30

o

I

2

o

3

10
20
30
RATIO OF MON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (rc/IBII

EMITTER-TO-BASE VOLTS (VES)
92CS-13906RI

92CS-13895RI

Fig. 14- Typical input capacitance VI.
emitte;-to-base voltage.

Fig. 15- Typical rise-time characteristics.

COMMON-EMITTER CIRCUIT.
, AMBIENT TEMPERATURE (TAl
COLLECTOR AMPERES (Ic)al

COMMON-EMITTER CIRCUIT.
AMBIENT TEMPERATURE (TAl'" 25·C

60

'" 60

I

II

25·C

'"c

~

RATIO OF "ON" COLLECTOR CURRENT TO
MTURN OFF~ BASE CURRENT IrC/rB2)=30

~

1~ 40

:i 40

l'"
"
I-

20

2

"'~
~

5

o

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (Ie/Isll

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (rC IIBII

92CS-13e96RI

Fig. 16- Typical rum-on time characteristics.

100

COMMON-EMITTER CIRCUIT.

AMBIENT TEMPERATURE (TAl" 25·C

~

i
~

100

92CS-13889RI

Fig. 17-Typical storage time characteristics.

COLLECTOR AMPERES (Iel " I

'Rl
~

RATIO OF ·ON" COLLECTOR CURRENT TO
"TURN OFF" BASE CURRENT (IC/IS21" 30

100

~

'"

Q.

8

10

~

6
4

~:l

20

10.

~

~
ri

-:+

~g~~~~T~E:~~::M~~RTi~T..jOLTAGE

6
(VCE'-30V
4 BASE.TO.EMITTER VOLTAGE (VBElaO
2 BASE-TO-EMITTER RESISTANCE IRBE)-O

/

/

6

/

4

2

/

0.018

V

6

o

10
20
30
RATIO OF "ON" COLLECTOR CURRENT TO
"TURN ON" BASE CURRENT (Ie/ISI)

Fig. 18-Typical tum*off time characteristics.

o

2~

~o

~

100

12.

150

AMBIENT TEMPERATURE (TAI-OC
92CS-I3903RI
9ZCS-13B9IRI

Fig. 19- Typical col/ector cutoff current
as a function of temperature.

13.1

File No. 350.

oornLJD

RF Power Transistors

Solid State
Division

2N5470
RCA-2N5470* is an epitaxial silicon n-p-n planar
transistor employing the overlay emitter-electrode construction. It is intended for solid-state microwave
radiosonde, communications, and S-band telemetry
equipment.
The ceramic-metal coaxial package of the 2N5470
features low parasitic capacitances and inductances
which provide for stable operation in the common-base
amplifier configuration. This transistor can be used in
both large· and small-signal applications in coaxial,
stripline, and lumped-constant circuits.
For application information on the 2N5470, see RCA
Application Note AN3764, "Microwave Amplifiers
and Oscillators Using the New RCA 2N5470 Power
Transistor," by G. Hodowanec, O.P. Hart, and H.C.

Lee.
*Fonnerly RCA Dev. Type No. TA7003

SILICON N-P-N
"overlay" TRANSISTOR
~~"

~r

For UHFjMicrowave
Power Amplifiers,
Microwave Fundamental·Frequency Oscillators,
and Frequency Muftipliers
TO·215AA package H-1598

FEATURES
• l·W output with S·dB gain (min.) at 2GHz
• 2·W output with lO·dB gain (typ.) at 1 GHz
• Ceramic·metal hermetic package with low inductance
and low parasitic capacitances

Maximum Ratings, Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE ••••• VCBO

50

V

COLLECTOR-TO-EMITTERVOLTAGE:
With external base-to--emitter
resistance (RBE ) = 10

VCER

50

V

EMlTTER-TO-BASE VOLTAGE •••••••• VEBO

3.5

V

PEAK COLLECTOR CURRENT. • • • • • • •

0.4

A

CONTINUOUS COLLECTOR CURRENT •• IC

0.2

A

n ........

COLLECTOR SUPPLY VOLTS (Ycc) = 28
CASE TEMPERATURE (Tc) • 2S 0 C

TRANSISTOR DISSIPATION: ••••••••• P T
At case temperatures up to 25 DC ••••

.

~ 1.5

3.5

w

At case temperatures above 25°C •••• See Fig. 2.

TEMPERATURE RANGE:
Storage and operating (junction) •••••. -65 to +200

1:
K;: I.D
0.5

DC
1.0

1.5

2.0
FREWENCY (f) _ GHIt
9ZS$-3191l

Fig. I· Typical Output Power vs. Frequency
for Common·Base Power Amplifier

132

9-74

File No. 350

2N5470

ELECTRICAL CHARACTERISTICS At Case Temperature (TCI = 25 DC

SYMBOL

CHARACTERISTICS

Collector·Cutoff Current

TEST CONDITIONS
DC
DC
Collector
Current
(rnA)
Voltage (V)
IB
VCB VCE IE
50

ICES

Collector·ta-Base
Breakdown Voltage

V(BR)CBO

Coliector-to·Emitter
Sustaining Voltage:
With external base-ta-emitter
resistance (RBE) = 10 l1

VCER(sus)

Emitter-to·Base
Breakdown Voltage

V(BR)EBO

Collector-ta-Emitter
Saturation Voltage

VcE$sat)

0.1

10

Ccb

30

RF Power Output
(Common·Base Amplifier):
At 2 GHz· (See Fig. 5.)
At 1 GHzb (See Fig. 12.)

POB

28
28

POB

24

RF Power Output
(Common·Base Oscillator):
At 2 GHz (See Fig. 15.)

..

UNITS

Min.

Max.

-

1

rnA

0.1

50

-

V

5

50

-

V

0

3.5

-

V

100

-

1.0

V

-

3.0

pF

IC

0
0

Collector·ta-Base Capacitance
(Measured at 1MH z)

LIMITS

0

-

W
W

1.0
2.0 (typ.)

80

I

0.3 (typ.)

W

..

aFar PIS = 0.316 W; minimum efficiency = 30%

bFo. PIB = 0.20 W; typical efficiency = 50%

1000 CASE TEMPERATURE (Tel = ICO°C
6

'"E

4

~

2

I

~

~

'"

~

8

Ie

(Lx) cONT\MJoul

I~

.

100

HOT-SPOT

vlEMPERATURE
(TJS) = 20D DC

6

4

NOTE:
TJS IS DETERMINED BY USE OF
INFRARED SCANNING TECHNIQUES
2

10

CASE

TEMPERATURE-OC

6 B I0

92LS-I224

224

6 8 100

COLLECTOR-TO- EMITTER VOLTAGE (vCE)-V
92CS-22B59

Fig. 2.Dissipation Derating Curve

Fig. 3 - Maximum Operating Area
for Forwarr/-Bios Operation

133

File No. 350

11
Rf INPUT WATTS IPnil

20

22

·24 .

COLLECTOR-TD-BASE VOL15 (Vea)
9zss.3192

NARDA

M1CROLAB
HW·l5H.
OR EQUIV.

904H, DR
EQUIY.

1zss.3nJ

Fig. 7· Typical Output Power vs. Collector·to·B.ase
Voltage for 2-GHz Common-Base Power Amplifier

Fig. 4· Typical Output Power vs. Input Power
lor 2·GHz Cammon·Base Power Amplifier

NARDA
9D4H,OR
EQUIV.

FREcPJENCY (n-CHI.

Fig. 5· Block Diagram 01 Test Set-up lor Measurement
01 Output Power lrom 2·GHz Common·Base Amplilier

9ZS5-m4

Fig. 8 - Typical Series Input Impedance and Collector
Load Impedance vs. Frequency for Common-Base
Power Amplifier
.

COLLECTOR-TO-BASE VOLTS (Ves). 15
FREIIJEHCY (I) • ZGHz

:p':'"

" \ ..::.::

....: .. ,

I~(30.81)-+-1.213
I
I.'"
1.280J
(426)-+0.'1)
IZLS-186\IRI

Dimensions in Inches and Millimeters

Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.

Fig. 6· Suggested Test Fixture lor Test Set.Up
Shown in Fig. 5.

134

,

'10

"UIO

If INPUT MILLIWATTS (P I a)

Fig. 9 - Typical Power Gain vs. Input Power lor
2-GHz Common-Base Power Amplilier

File No. 350

2N5470

BERYLLIUM OXIDE
WASHER

Note h Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.

915S-3797

Note 2: Conhex 50-045-0000, Sealectro Corp., or equivalent.

Fig. 10. Constructional Details of 2·GHz Power Amplifier Shown in Fig. 11.
2HS470

COLLECTOR·TO·BASE YOLTS {YcS> • 15
FREQJENCY (I) • 1 GJh

cLI~_B & _ AJ OPER"'~ION

14
12

m

~

C 2 : 1,000 pF I feedthrough, AlIenBradley FB2B. or L 1 , L 2 : RF choke. 3 turns
equivalent

or equivalent

8

%

;'i ,

Nc. 30 wire, 1/16 in. <1.57) ID

C 3 : 0.3-3.5pF
Johanson 4701,

"

,

C4 : 0.35-3.5pF
Johanson 4702,
or equivalent

or equivalent

~~"\

"'-,

10

C 1: 0.8-10pF
Johanson 4355.

~

COLLECTOR "LL'''PERE'
(QUIESCENT CONDITIONS)

-£>
C"("J',t

r-.......; k' " l\:..Op~·
''fr,o~_

(,?:o~ "-

~ 4

(J'/~'N

-J)',

"

'<1.'8,,,

:--.... ....

3/16 in. (4.75) long
Xl' X2: Coaxial lines; Bee
Fig. 11 for details.

2
0

Dimensions in Inches and Mi lIimeters

2

Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.

Fig. 11· Typical Circuit for 2·GHz, Coaxial-Line Power
Amplifier Shown in Fig. 10.

2N5470

6 B 10
.2
..
RF INPUT MILLIWAns {Pial

6

a 100
91$$-3799

Fig. 12- Typical Power Gain vs. Input Power
for I·GHz Power Amplifier

C 11 C 5 , C 6 : 1-14 pF, air-dielectric, Johanson
S901. or equivalent
C 2 : 0.S5-3.5 pF. air-dielectric, Johanson
4701. or equivalent

C 3 , C 4 : 1000pF, feed-through, Allen-Bradley FA5C,

'~JLL3

(1.97)

R,

..L.

+

Vee

~
(6.98)

92ss-me

or equivalent
C7 : 1000 pF, ceramic. leadless
L I , L 2 : RF choke, O.l,LLH, Nytronics Deci-Ductor
LS: O.OI-in. (,254) thick, 0.157 in. (3.98) wide copper strip
shaped as shown in inset drawing

R 1: 100 D, 'h W

Dimensions in Inches and Millimeters

Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.

Fig. 13 - Typical Circuit for l-GHz Power Amplifier

135

2N5470

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 350
VEE--24V

.,

.,

D.DO
(2.03)

0.03

~~----~~~~~~~~~~~-,~')

92$$.:1100

c 1: O.OIILF disc ceramic
C 2 , C3 : 100 pF, feed-through,
Allen-Bradley F ASC, or
equivalent
C4 , C5 : 0.35-3.5 pF, Johanson
4701, or equivalent

NOTE 2

1/12
(.793)

METAL GROUND PLANE

Ll' L 2 : RF choke, 4 turns.
No. 33 wire, 0.062 in. (1.57)
!D, 3/16 in. (4.75) long
L3: 3164 in. (1.17) length of No. 22 wire
Xl: 0.82pF, "gimmick", Quality Components
type 10% QC, or equivalent
R 1: 5-10
112 W
R2 : 51
112 W

n,

R3:

1---------1i~78);-------II'

n,
1200 n, 1/2 W

9ZSS-3802

Dimensions in Inches and Millimeters
Note 1: Dimensions in parentheses are are in millimeters and are
derived from the basic inch dimensions as indicated.
Note 2: Produced by removing portion of upper layer of double-clad.
Teflon board. Budd Co. Polychem Div. Grade lOST, I oz, 1/32 in.

(.793) thick, (E= 2.6), or equivalent.

Fig. 16· Detail Drawing of Microstripline, XI
Specified in Fig. 15.

Dimensions in Inches ond Millimeters

Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.

Fig. 14· Typical Circuit for 2·GHz Grounded·Collector
Power Oscillator
tVee - 24V

COllECTOR SUPPLY VOLTS {Vcd
92$$.3803

C 1 , C3 : 100pF, feed-through, L 1: RF choke, 5 turns
Allen-Bradley F ASC,
No. 33 wire,1I16 in. (1.57)
or equivalent
!D, 3/16 in. (4.76) long
C 2 , C4 : 0.35-3.5pF,
50-.0 miniature coaxial line
Johanson 4702, or
1.5 in. (38.1) long
eqq.ivalent
Xl: Microsuipline circuit; see
Fig. 16 for details.
Dimensions in Inches and Millimeters

Dimensions in parentheses are in millimeters and are
derived from the basic "inch dimensions as indicated.

Fig. 15· Typical Circuit for 2·GHz Grounded.8ase
Power Osci/lator

136

~

Fig. 17· Typical Output Power vs. Collector
Supply Voltage for 2·GHz Grounded·Base
Power Oscillator

TERMINAL CONNECTIONS
No.1 - Emitter
No.2 - Base
No.3 - Collector

File No. 423

RF Power Transistors

[Rl(]5LJD
Solid State
Division

2N5913

Silicon N-P-N Overlay Transistor
12.5-Volt, High-Gain Type for Class-C
Amplifiers in VHF/UHF Communications Equipment

Features:
• High Power Gain, High Power Output •••
At 12.5 V:
2-W (typ.) output at 470 MHz (7-dB gain)
2-W (typ.) output at 250 MHz (9-dB gain)
2-W (typ.) output at 175 MHz (l3-dB gain) .
At 8 V:
1.5-W (typ.) output at 470 MHz (4.8-dB gain)
1.5-W (typ.) output at 250 MHz (7.0-dB gain)
1.5-W (typ.) output at 175 MHz (lO-dB gain)

JEDEC TO-39

MAXIMUM RATINGS, Absolute-Maximum Values:
*COLLECTOR-TO-BASE VOLTAGE.
COLLECTOR-TO-EMITTER
BREAKDOWN VOLTAGE:
With base shorted to emitter • . . .
With base open . . . . . . . . . • . . .
*EMITTER-TO-BASE VOLTAGE . . .
* CONTINUOUS COLLECTOR
CURRENT . . • . . . . . • . . • • • . .
"TRANSISTOR DISSIPATION: .•••.
At case temperatures up to 75°C. .
At case temperatures above 75°C.

*

* TEMPERATURE RANGE:
Storage & Operating (Junction) ..
*LEAD TEMPERATURE:
At distances ~ 1/32 in. (0.8 mm)
from seating plane for 10 s max. .

V CBO

36

V (BR)CES

36

V

V (BR)CEO
V EBO

14
3.5

V
V

0.33

A

3.5

W

IC
PT

V

Derate at 0.0028 W/oe
-65 to +200

RCA Type 2N5913· is an epitaxial silicon n-p-n planar transistor featuring "overlay" emitter electrode construction. It
is intended for VHF/UHF mobile, portable, and VHF marine
transmitters, as well as UHF CB, sonobuoy, beacon, and
other applications where intermedia~e power output is required at low supply voltage.

..

Formerly RCA Developmental Type TA7477.

TERMINAL CONNECTIONS

°c

230°C

LEAD 1 - EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR, CASE

* In accordance with JEDEC registration data format J8-6
RDF-3/JS-9 RDF-7.

3-70

137

2N5913 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ FileNo.423
ELECTRICAL CHARACTERISTICS Case Temperature (TCJ = 25°C Unl... Otherwise Specified

STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC
Voltage
(V)
VCE

*

VEB

'E

LIMITS

'B

Min.

'C

UNITS

Max.

Collector-Cutoff Current
Base Connected to Emitter

'CES

Base Open

' CEO

*

Collector-to-Base
Breakdown Voltage

V(BR)CBO

*

Collector-to-Emitter
Breakdown Voltage:
With base open

V(BR)CEO

*

DC
Current
(mA)

With base connected
to emitter

V(BR)CES

Emitter-to-Base Breakdown
Voltage

V(BR)EBO

Thermal Resistance:
(J unction-to-C ase)

12.5

0

1.0 b

10

0

0.3

mA .

36

-

V

25"

14

25"

36

-

0

3.5

-

V

-

35.7

°C/W

0

0.5

0
0
0.5

6J-C

a Pulsed through a 25-mH inductor; duty factor

=-'

mA

V

b Te

50%.

= lOO·e.

DYNAMIC

TEST & CONDITIONS

Power Output (VCC
P,E = 0.1 W

= 12.5 V):

*

Large-Signa I Common-Emitter Power
Gain (VC C =12.5 V):
P,E ~ 0.1 W

*

Collector Elliciency (VCC
P,E = 0.1 W

= 12.5 V):

Common-Base Output Capicatance
VCB = 12 V

* In accordance

138

LIMITS

SYMBOL

FREQUENCY
. MHz

MINIMUM

POE

175

1.75

W

GpE

175

12.4

dB

7JC

175

50

'At

Cobo

I

with JEDEC registration data format J5-6 RDF-3/JS-9 RDF-7.

TYPICAL

15 (max.)

UNITS

pF

File No. 423 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5913
PERFORMANCE DATA

TYPICAL AMPLIFIER PERFORMANCE (V CE = 12.5 V)

FREQUENCY
(f)-MHz

INPUT OUTPUT COLLECTOR
POWER POWER EFFICIENCY CIRCUIT
(PIE)-W (POE)-W
77C

175

0.1

2

60

Fig.6

250

0.25

2

65

Fig.6

470

0.4

2

65

Fig.7

2

-

Fig.8

156
(Maline
Transmitter)

.005

COLLECTOR-SUPPLY VOLTS (V CC )&12.5
CASE TEMPERATURE (T l'25 D C

e

2.5

0,1

100

200

300
400
FREQUENCY!fI-MHz

soo
O.()5
92CS·15645RI

Fig.l • Typical power output vs. frequency.

RF INPUT WATTS (PIE)

92C$-15644RI

Fig. 3 • Typical power output vs', power input at
250 MHz for circuit shown in Fig.S.

0.1
RF INPUT WATTS (PIE)

9ZCS-I5i46RI

Fig. 2 • Typical power output vs. power input at
175 MHz for circuit shown in Fig.S.

RF INPUT WATTS (PIE}

92CS-15643RI

Fig. 4 • Typical power output vs. power input at
470 MHz for circuit shown in Fig.7. '

139

2N5913 _ _ _-'-_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 423
DESIGN DATA

"
REFLECTION COEFFICIENT SCALE

CENTER

Colloc:tor-to-Emittar Voll3go (VeEI- 12.5 V
Collector-Curnnt Uel - 100 mA

eo. TemperatUre (Tel -

SZCM·16066

25"e

Fig. 5· Typical S parameters

140

vs.

frequency.

File No. 423 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5913
APPLICATION DATA

+Vcc

92'S-'~640RI

c l , c 2 , c 3 ' & C4: 7·35 pf, ARca 403, or equivalent

92CS-15639RI

C5 : 1,000 pf, feed·through
C6: 0.005 f.J.F, disc ceramic

LI :
L2 :
L3:
L4:

c I ' C2' C3 : 0.So7 pf, ARCa 400, or equivalent
C4: 7·35 pf, ARCa 903, or equivalent

2 turns No.16 wire, 3/16 in. ID, 1/4 in. long
Z = 450 ohms; ferroxcube VK20o-09/3B, or equivalent
2 turns No.14 wire, 1/4 in. lOr 5/16 in. long
3 turns No.14 wire, 3/8 in. 10, 3/8 in. long

C S: 22 pF, ± 5% silver mica
C6: 470 pf, feed·through
C7: 0.1 J.LF, disc ceramic

L 1 ..

4:

1~1/2 turns, close-wound,1I22 enameled Wire}

L2: 0.39}tH, Nytronlcs Deci·

Ductol. or equivalent

Mount Cs as close as possible to base and emitter pins.

Fig. 6 • 1751250·MHz amplifier test circuit for
measurement of power output.

L3 .. L4: 4-1/2 turns, Close-wound, #22 enameled wile

LI , L3 , L4: I turn No.18 wire
1/4 In. ID, 1/8 in. long

Fig. 7· 470·MHz amplifier test circuit for
measurement of power output.

:~rle~d~~S S~~gS~~g;~~~:~I~~t~~Jti(~'2i.~n.Ox~";~-~~~O~)~~n~·~tii!~3~ans.

L5 • L6: 1·1/2 turns, 1/4 in. length, .20 bare wire
L 7: 2 turns, 3/16-in. length, 3/16-in. dia., #20 bare wile
La: 2-1/2 turns, 1/4-in. length, #20 bare wire
RFC: 4 turns, #30 enameled wire on Ferroxcubet ferrite bead
#56-590-65/48, or equivalent

All capacitm values at'e in picofarads unless otherwise specified.
All resistances are in ohms and are l/+waU types.

* Arnold

Magnetics Corp., Los Angeles, Cal.

t Ferroxcube Corp. of America, Saugerties, N.Y.

Fig. 8· Typical circuit for a frequency·multiplier chain (fIN = 13 MHz, fOUT
for 156-MHz marine-radio transmitter.

= 156 MHz)

141

File No. 424

llCIBLJD

RF Power Transistors

Solid State
Division

2N5914

2N5915

High-Power Silicon N-P-N
Overlay Transistors
12.5-Volt, High-Power Types For Class-C Amplifiers in
VHF/UHF Communications Equipment
Features:

.Low Inductance radial leads-particularly useful for strip-line circuits
.Hermetically sealed ceramic-metal package
TO-216AA package

• Electrically isolated mounting stud
.6 watts minimum output from 2N5915 amplifier at 470 MHz
.7-dS gain from 2N5914 driver at 470 MHz

MAXIMUM RATINGS, Absolute-Maximum Values:
2N5914

36

• COLLECTOR-To-EMITTER BREAKDOWN
VOLTAGE: •••••••••••••
With baBe connected to emitter V(BR)CES 36

36

With baBe open •••••••••• V(BR)CEO 14
.EMITTER-TD-BASE VOLTAGE VEBO 3.5
.cOLLECTOR CURRENT:
Continuous •••••••••••••• Ie
0.5

3.5

.TRANSISTOR DISSIPATION: ••• P T
·At case temperatures up to 75°C
At case temperatures above 75°C
eTEMPERATURE RANGE:
Storage & Operating (Junction) ••
• CASE TEMPERATURE
(During soldering):
For 10 B max~ •••••••••••••

RCA 2N5914" and 2N5915 b are epitaxial silicon n-p-n
planar transistors featuring overlay emitter electrode construction.

2NS91S

• COLLECTOR-TD-BASE BREAKDOWN
VOLTAGE •••••••••• " V • 12.5 V
CASE TEMPERAntRE lTd = 250 C

...
,
~
~

'''''''''I;~("

5.'

..•

II!)./II'.

j 3.'

I

COLLECTOR SUPPLY VOLTAGE eVeel • 12.5 V
CAse TEMPERATURE (TC) = 250 C

12

0"

5
~

.~

o

2.'

4

I.'
200

400

600

.00

.00

20'

fREQUENCY (f) - ilH ..

600

...

FREQUENCY (f) - MHII
91L~3004RI

9ZL5-3M2IIl

Fig. I· Typical output power vs. frequency
for 2H59 14

Fig. 2· Typical output power vs. frequency
for 2HS915

~"J

FREQUENCY (I) -470MHz

..
;>

I

of'

-

2

o

0.2

0.4
0.6
INPUT POWER (P1EI-W

0 .•

o

0.5

1.0
INPUT POWERfPyE)-W

92LS-3058Rr

Fig. 3. Typical output power vs. input power at 470 MHz
for 2H5914 in circuit shown in Fig. 8

92LS-30'!7RI

Fig. 4· Typical out/?ut power vs. input power at 470 MHz
for 2H5915 in circuit shown in Fig. 8

FREQUENCY (f). 175 MHz

FREQUENcY (f). 115 MHz

CASE TEMPERATURE (Tel = 25° C

CASE TEMPERATURE (Tcl. 2SDC
15

,

12.5

~

'W
.fJ1D

~

I

2.5

i
Q.

7.S

~g

5

2.5

1.5

0,05

0.1

0.15

0.2

0.5

0.25

INPUT POWER (PIE) _ W

1.0

INPUT POWER (PIE) -

1.5

to

w

92ss-4192

Fig. S· Typical output power vs. input power
at 175MHz for 2H5914 (Fig. 15)

144

Fig. 6· Typical output power vs. input power
at 175MHz for 2HS91S (Fig. 15)

File No. 424

2N5914.2N5915
DESIGN DATA
COLLECTOR SUPPLY VOLTAGE (Veel = I2.SV
CASE TEMPERATURE (Te) = lS"C

2H5914

2NS915

50

100

100

I

200

92LS-3036RI

Fig. 7 .Dissipation elerating for 2N5914 anel2N5915

~
I

300

500

400

FREQUENCY (f)-101Hz

CASE TEMPERATURE (TCI-OC

9iSH!!!!

Fig. 8· Large signal equivalent parallel input resistance
vs. frequency for 2N5914 anel 2N5915

COLLECTOR SUPPLY VOLTAGE (Vee)" 12.SV
CASE TEMPERATURE (Tel" 2S DC

COLLECTOR SUPPLY VOLTAGE (Vee)" 12,5 v
CASE TEMPERATURE (Tel = 2S DC

~+7S
2N5915

~
~ +50

2N5914

~U -"
~

~

1NPlJr PO WFfR (p

:; -25

ill

'E) .. l.s,..

~

w

~

-so

!1i
a.

_75

0.75

100

200

300

400

soo

100

200

300

400

500

......

FREQUENCY If) - MHz

FREQUENCY (f)-MHz
m5-4495

Fig. 9· Large signal parallel equivalent input capacitance
vs. frequency for 2N5914 anel 2N5915

Fig. 10· Large signal equivalent parallel output
capacitance vs. frequency for 2N5914 anel 2N5915
INPUT POWER (PIE) .. 0.75 W
CASE TEMPERATURE IT c) .. lSDC

INPUT POWER (PIE) = 1.5 W
COLLECTOR SUPPLY VOLTAGE (Vee) ~ 12.5 V

20 CASE TEMPERATURE (Tel = 2SDC

3D

18

"

20

10

1110

200

300

400

18
100

soo

200

300

400

500

FREQUENCY (11- 101Hz

FREQUENCY (f)-14Hz
9ZSs-4491

Fig. II· Large signal parallel loael resistance
vs. frequency for 2N5915

ms..m8

Fig. 12· Large signal parallelloael resistance
vs. frequency for 2N5914

145

2N5914. 2N5915

----------------------~.

APPLICATION DATA

VCC,,12.5V

~
C2

L4

File No. 424

Cl. C2. C3-0.9-7.O pF •. ARCO #400. or equivalent
C4-1.5.20 pF. ARCO #402, or equivalent
C5- 1000 pF (feed.through)

C5

L'

C6 ·0.1 JlF (ceramic)
C7 -2-18 pF, Amperex HT10MA/218, or equivalent
connect between the bose and emitter with the
shortest possible leads.
Ll, L2-1 turn # 16 wire, 3116 in. 1.0., 1/8 in. lang
L3-1 ,urn # 20 wire, 3/16 in. 1.0., 1/8 ·in. long

c.

C7

921S·3041.,

L4- Ferrite choke, 4500impedance, Ferroxcube
VK.200-09.3B, or equivalent

Fig. 13. 470 MHz amplilier userl for measuring power
output anrl power gain in 2N5914 anrl 2N5915
SPECIAL PERFORMANCE DATA

,470 MHz

DRIVER

-

The transistor ean withstand any mismatch in load,
which can be demonstrated in the following test:
470 MHz
AMPLIFIER

(FIG. I')

1. The test is performed using the srrangement shown.
f---

2. The tuning stub is varied tlirough a half wavelength,
which effectively "aries the load from an open circuit to a short circuit.

T=

STUB

Sl2LS-1519RZ

3. Operating conditions; Vcc = 12.5
RF input power = 0.4 Wfor 2N5914, 2.0W for2N5915
4. Transistor Dissipation Rating must not be exceeded.
During the above test, the transistor will not be damaged or degraded.

Fig. 14- Test set.up lor testing loarl mismatch capability
01 2N5914 anrl2N5915

VCC "I2.5V

DETAIL OF
TRANSFORMER T,

~

SUPPLY

TO
COLLECTOR

92CS-1579IRI

L 1-1/2 turn # 14 wire, 1/4-in. 1.0.
RFC·Z = 4500, Ferroxcube VK.200.09/3B, or equivalent
Cl-7-100pF, Area 423, or equivalent
C2-4-40pF, Area 422, or equivalent
C3 -0.1 JlF ceramic
C4- 0.001 JlF feedthrough
C5 -62 pF silver mica
C6- 14.150 pF, Area 424, or equivalent
C7-24.200 pF, Area 425, or equivalent
Tl- Twisted pair of # 20 enameled wire; 14 turns/in.
Formed in a loop 3/8 in. diameter, cross connected
(End of one winding connected to beginning of other)

Fig. 15 ·175-MHz omplilier lor measuring power output
anrl power gain in 2N5914 anrl 2N5915

146

2N5914.2N5915

File No. 424
Yee· ,2.SV

CI. C2. C,. CS. C,. CB
C3. C6

0.9-7.0pF
18pF
L, I TURN NO. 18 WIRE I,' IN. I,D •• 1:8 IN. LONG
TAP AT I. , TURN FROM COLLECTOR
(9. ClI O.lJ1F
LS 1 TURN NO. 20 WIRE 1. 8 IN. 1.0., 1/8 IN LONG
CIO. CI2 .0011lF
L8 I TURN NO, 18 WIRE 1.'4 IN. 1.0. 1:8 IN. LONG
LI I TURN NO. 16 WIRE 3. 16 IN, 1.0. 1:8 IN LONG
L2. L6
FERRITE CHOKE Z • ,son FERROX CUBE VK·200·09·3B OR EQUIV.
L3. L7
I TURN NO. 20 WIRE 3.. 16 IN. 1.0, 1i8 LONG

'CONNECT C3 AND

C6

BETWEEN THE BASE AND EMITTER

92SM-4499

Fig. 16 - Typica/470MHz amplifier with
0.4 W input one! 6.0 W output

TERMINAL CONNECTIONS

Terminal No.1, 3 - Emitter
Terminal No.2..., Base
Terminal Nol 4 - Collector

147

File No. 425

oornLJIJ

RF Power Transistors

Solid State
Division

2N5916

2N5917

High-Gain Silicon N-P-N
Overlay Transistors
For VHF/UHF Communications Equipment
~

~
~

\'\Ip.

2N5917
RCAHF-31
package

H-1676

, Features:'
• Radial leads for microstripline circuits
.2 watts (min.) output at 400 MHz (lO-dB gain)
• 2 watts (typ.) output at 1 GHz (S-dB gain)
• Low-inductance, ceramic-metal hermetic packages
• All electrodes isolated from stud
• 100 mW (tyP.) broadband 50/450-MHz
(10-<18 gain)

MAXIMUM RATINGS, Absolute-Maximum Values:
2N5916
2N5917
'COLLECTOR-TO-BASE
VOLTAGE ••••••••••••••• VCBO

55

V

*COLLECTOR-TD-EMITTER
VOLTAGE
With base open ••••••••••• VCEO

24

V

'EMlTTER-TO-BASE
VOLTAGE ••••••••••••••• VEBO

3.5

V

'CONTlNUOUS COLLECTOR
CURRENT ••••••••••••••• I C

0.2

A

·TRANSISTOR DISSIPATION ••••• P T
W
At case temperatures up to IOOoe
4
At case temperatures above IOOoe •• Derate linearly
at 0.04 W/oC
'TEMPERATURE RANGE:
Storage & Operating (Junction) •• -65 to +200

Type 2N59l6 features a new hermetic, ceramic-metal
package having terminals isolated from the mounting
stud. These rugged, low-inductance, radial leads are
designed for microstripline as well as lumped-constant
circuits. 2N59l7 is a 2N59l6 without the 'llountine: stud.
"Formerly RCA Dev. Type Nos. TA7411 and
.
TA7852. r!3spectivelY.

"WARNING: RCA types 2N59l6 and 2N59l7 should
be handled with care. The ceramic portion of these
transistors contains BERYLLIUM OXIDE as a major
ingredient. Do not crush, grind, or abrade these

• CASE TEMPERATURE ,(During soldering):
For 10 s max •••••••••••••••

RCA 2N59l6 and 2N59l7& are epitaxial silicon n-p-n
planar transistors featuring "overlay" emitter electrode
construction. They are intended for large-signal and
small-signal high-gain rf amplifiers and driver applications for VHF/VHF communications equipment.

230°C

POl'-

tions of the transistors hecause the dust resulting
from such action may be hazardous if inhaled."

*In accordance with JEDEC registration data fannat J&6.
, RDF-3/JS-9 RDF-7

148

11·73

File No. 425

.~----------------_ _ _ _ _ __

ELECTRICAL CHARACTERISTICS, Case Temperature (Tel

2N5916,2N5917

= 25°C

STATIC

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Collector-to-Emitter
Cutoil Current:
Base-emitter junction shorted
Collector-to-Emitter
Breakdown Voltage:

ICES

DC
Collector
Voltage

DC
Base
Voltage

VCE

VBE

30 b

0

0

V(BR)CES

With base open

IE

DC
Current
rnA
IB

V(BR)CEO

Emitter-to-Base
Breakdown Voltage

V(BR)EBO

Collector-to-Emitter
Saturation Voltage

VCE(sat)

Thermal Resistance:
(Junction-to-Case)

6J-C

0.1
10

LIMITS

IC

UNITS

MIN. MAX.

-

1

5a

55

-

5a

24

-

0

3.5

-

V

100

-

0.5

V

-

25

°C/W

rnA

V

a Pulsed through a ~5-mH inductor; duty factor = 50''!
b Case temperature = 1000C

DYNAMIC

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC Collector
Supply
(VCC)-V

Output
Power
(POE)- W

Input
Power
(PIE) - W

Frequency
(f)- MHz

LIMITS

UNITS

MIN.

MAX.

400

2.0

-

W

400

10

-

dB

400

50

-

%

1

-

4.5

pF

,

Power Output _
(See Fig. 10)·

POE

28

Power Gain

GpE

28

Collector .Efficiency

7)C

28

Collector Base
Capacitance

Ccb

30(VCB)

* In accordance with JEDEC registration

0.2
2
0.2

data format J5-6 RDF-3/JS-9 RDF-7.

TERMINAL CONNECTIONS
Terminals 1,3 - Emitter
Terminal 2
- Base
Terminal 4
- Collector

149

2N5916,2N5917 :....- - - - - - - - - - - - - - - - - - - - - - - File No. 425

PERFORMANCE DATA
CASE TEMPERATURE {Tel" 25"(
COLLECTOR SUPPLY VOLT AGE (Vee)" 28 v

CASE TEMPERATURE (Tel. 25 0 c
l COLLECTOR SUPPLY VOLTAGE (Vee>· 2B

60

10

2DO

.00

600

8DO

1000

1200

1400

1600

FREQUENCY (I) - MHz

o
o

1800

Fig. 1 • Typical power output vs. frequency
(for both types).

0.'

CASE TEMPERATURE (Tel s 2S DC
INPUT POWER (PIE) " 0.2 Wat f. 400 MHz
• 0.63Wlllf" I GHz

10

80

'"

30

'"

15

COLLECTOR SUPPLY VOLTAGE (Vee) _ v

CASE TEMPERATURE (Tcl- DC

92SS.3a71Ri

92S5-3!1SRI

Fig. 3· Typical power output vs. case temperature
(for both types).
~

0.2
0.3
0.4
0.5
INPUT POWER (PIE) _ W

Fig. 2 • Typical power output ancl collector efficiency
vs. power input (for both types).

6

CASE TEMPERATURE (Tel

0.1

9lSS-3S11RI

Fig. 4 • Typical power output or collector efficiency vs.
collector supply voltage (for both types).

100 oc

Ie MAX. (CONTINUOUS)

~";.9PERATION

lDOI~IR.

10

f

10
COLLECTOR·lO-EMITTER VOLTAGE IYCE1- V

,

,,,

Fig. 5 • Safe operating area, for clc operation
( for both types).

150

.

-65

-so

50

100

ISO

20D

CAse TEMPERATURE CTcl- DC
12Ss.4501

9Z'SS-lB14R]

Fig. 6 • Derating curve (for both types).

2N5916.2N5917

File No. 425
COLLECTOR SUPPLY VOLTAGE IVed. 28V

7
~

OUTPUT POWER (Poe) = 2W

400

~

t;

CAPACITANce fC,l

COLLECTOR LOAD lit
S/St'ANCc

o
200

fRQ.)

o
400

600
FREQUENCY If) _ MHI

800

1000

FREQUENCY (f) _ M.H;r
92SH5tl2

Fig. 7 • Typical large.signal series input impedance
vs. frequency (for both types).

REFLECTION COEFFICIENT SCALE

Fig. 8 • Typical large-signal. parallel collector load and
parallel output capacitance vs. frequency (for both types).

CENTER

COLLECTOR·YO·EMITTER VOLTAGE (VeE) '" 15V
COLLECTOR CURRENT (Ie) = 60_100mA.

CASE TEMPERATURE (Tel'" 25°C

92SS-4504

Fig. 9 - Typical S parameters vs. frequency (for both types).

151

2N5916,2N5917

File No. 425
2N59160R2NS917

L,

(Zl"Saa}

c,

Cl' C3 C2 C4 Cs -

0.9-7 pF, ARCO 400"
1.5-20 pF. ARCO 402*
0.0015 fLF, disc ceramic
1,000 pF, feedthrough type,
Allen-Bradley FASC'
C6 -1 fLF, electrolytic
Ll, LS - 1 turn "
L2 - RFC, .1 fLH
L3 - 3 turns Ii
L4 - 2 turns"
Rl - 10 D , carbon

"'ee' 26V
mS-ISOIi

Cl - O.ooIS fLF, disc ceramic
C2, Cs - 2-lS pF, Ampere. H.T. IOmA/21S,
or equivalent
C3, C4 - 6S0 pF, chip cap.,Allen-Bradley
B166S11, or equivalent
Cs - 1 fL F, electrolytic
~,C7 - 1,000 pF, feedthrough type
Rl - 2 kD, \1 W, carbon
R2 - sooD, \1 W, carbon
R3, R4 - 2soD, \1 W, carbon

* Or equivalent
"All coils S/32 in. (3.96 mm)
1.0. It IS whe, 12 turns per inch

T - Twisted pair of #22 Wire,

10 twists, 1 In. long

Fig. II - 50/450-MHz 10-<18 broadband amplifier using
type 2N59 16 or 2N5917.

Fig. 10 - 400-MHz amplifier test circuit lor
measurement of power output.

Vee· 2BV

L,

OUTPUT

x,

STRIP

..Le::::===f
.172JI
(4.371

~=X2===!,~

1375.J

1--134.921--1

r

"

T

.06

OIELECTR1C~

(1.521
\:GROUND

PLANE
92SS·388Q

C 1, C 3, 0.35-3.5 pF. Johanson
4701, or equivalent
C 2, 470 pF, feed-through type,
Allen Bradley F ASC, or equivalent
L 1: 3 turns No. 22 wire
5/32 in. (3.96 rom) 10, 318 in. (9.52

L 2,

Note 1: Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions 88 indicated.
rom)

long

1~

turns No. 22 wire
5/32 in. (3.96 mm) 10, 3/8 in. (9.52 mm) long
R 1, la-D, 1/4-W carbon
Xl' X2: Microstrip details given in Fig._ 13

Fig. 12 - I-GHz amplifier using type 2N5916 or 2N5917.

152

Note 2: Produced by removing upper layer of double-clad,
Teflon board, Budd Co. Polychem Div. Grode 108T,
1 oz.' 1/16 in. (1.52 mm) thick, ( € = 2.6), or equivalent.

Fig. 13 - Typica/ microstrip layout lor I-GHz power
amplifier circuit shown in Fig. 12.

File No.

448 - - - - - - - - - - - - - - - - - - - - - - - - - - - -

RF Power Transistors

0008LJ1J
Solid State
Division

2N5918
10-W, 400-MHz High-Gain Silicon
N-P-N Emitter-Ballasted
Overlay Transistor
For VHF/UHF Communications Equipment

Features,

TO-216AA package

•
a
•
D

•
"

10 W output at 400 MHz (8 dB min. gain)
Emitter·ballasting resistors
Broadband performance (225-400 MHz)
Low·inductance, ceramic·metal hermetic package
All electrodes isolated from stud
Radial leads for stripline circuits

MAXIMUM RATINGS, Absolute·Maximum Values.
* COLLECTOR·TO·EMITTER VOLTAGE:
With base open . . . . . . . . . . . . VCEO
• COLLECTOR·TO·BASE VOLTAGE ... VCBO
• EMITTER·TO·BASE VOLTAGE . . . VEBO
* CONTINUOUS COLLECTOR CURRENT IC
• TRANSISTOR DISSIPATION . .
PT
At case temperatures up to 75°C
Derate
At case temperatures above 75°C

30
60
4

0.75

V
V
V
A

W
10
linearly at
O.OSW/oC

* TEMPERATURE RANGE:
·65 to +200 ° C
Storage & Operating (Junction)
* CASE TEMPERATURE (During soldering):
For 10 s max. . . . . . . . . . . . . .
230°C

RCA type 2N591S* is an epitaxial silicon n·p·n planar
transistor employing "overlay" emitter·electrode construe·
tion. This device features emitter·ballasting resistors which
improve ruggedness and overdrive capability, and a hermetic
ceramic-metal package with terminals isolated from the
mounting stud. The terminals are rugged, low·induetance,
radial leads suitable for microstrip as well as lumped·constant
circuits.

The 2N591S is intended for use in large'signal, high·power,
broadband and narrow·band amplifiers in vhf/uhf commun·
ications equipment.
* Formerly RCA Dev. Type No. TA7367.

*10 accordance with JEDEC registration data format JS-6 ADF-3/JS-9

RDF·7.

TERMINAL CONNECTIONS

Terminals 1, 3 • Emitter
Terminal 2 • Base
Terminal 4 • Collector

WARNING:

RCA Type 2N5918 should be handled

with care. The ceramic portion of this transistor contains
BERYLLIUM OXIDE as a maior ingredient. Do not
crush, grind, or abrade these portions of the transistor
because of dust resulting from such action may be
hazardous if inhaled.

7·70

153

2N5918

File No. 448

ELECTRICAL CHARACTERISTICS, Case Temperature (Tcl = 25°C
STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

• Collector·to-Emitter
Cutoff Current:
Base-emitter junction
shorted
• Coliector·to·Emitter
Breakdown Voltage:

DC
Collector
Voltage

DC
Base
Voltage

VCE

VBE

30

0

ICES

DC
Current
mA
IE

IB

IC

0

V(BR)CES

LIMITS

UNITS

MIN. MAX.

-

5

100a

60

-

100a

30

0

4

-

-

12.5

mA

V

·

With base open

V(BR)CEO

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

Thermal Resistance:
(Junction·t o.case)

/1 J.C

a Pulsed through a 25-mH inductor; duty factor

1

V
°C!W

=50%

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

* Power Output
(See Fig. 10)
Power Gain

* Collector Efficiency
Coliector·to·Base
Output Capacitance

SYMBOL

DC Collector
Supply
(VCC)-V

Output
Power
(POE)-W

Input
Pow!!r
(PIE)-W

Frequency
(fl-MHz

1.59

400

LIMITS

UNITS

MIN. MAX.

POE

28

GpE

28

10

400

8

-

11C

28

10

400

60

-

Cobo

30(VCB)

1

-

13

10

W
dB
%
pF

• In accordance with JEDEC registration data format JS-& RDF-3/JS-9 ROF-7.

PERFORMANCE DATA
COLLECTOR SUPPLY VOLTAGE 

25

20

8
•0

COLLECTOR - SUPPLY VOLTAGE I VCC)-V
92CS-19146

20

..

,. 19

I

~ 18

117
!;

§'
.5

••

20

40

60

80
100
120
140
CASE TEMPERATURE.1Te)-OC

92tS-19147

Fig. 5- Typical output power and collector efficiency vs.
collector·supply voltage.

Fig. 6- Typical output power vs. case temperature.

Fig.7-Dissipation·derating curve for class C operation.

Fig.B- Typical variation of collector·to·base capacitance with
collector·to-base voltage.

COLLECTOR-TO-BASE VOLTAGE 1Vcs)-V 92CS-19149

COLLECTOR-SUPPLY VOLTAGE I Vee )·28V
OUTPUT POWER (POE). 16W
CASE TEMPERATURE (Tc)a2S D C

C!I

COLLECTOR-SUPPLY VOLTAGE 1Vcc)o28 V
OUTPUT POWER (POE) -16 W
CASE TEMPERTURE 1TC}a2S0C

I 'a30

¥~
U
W
U-

~~20

"Cl.

i3~

·.N

o
200

.00

400

200

500

FREQUENCY UI- MHz

i2C5-19150

Fig.9- Typical large·signal parallel collector load resismnce
and parallel output capacitance vs. frequency.

160

300

400

500

FREQUENCY (t 1- MHz
92CS-191SI

Fig. 10-Typical large-signal series input impedance vs.
frequency.

File No. 505 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5919A

.070
(1.18)

.25
(6.3)

OUTPUT STRIP

FEED·THROUGH

~~~~~D PLA"' tJ·')(,.d~Vi~;::~:L'CTRIC
DETAIL OF FEED-THROUGH
CAPACITOR MOUNTING

C"

92SS.1J61

c 2 • C 7: 2·18

pF, Amperex HT10MA1218,
or equivalent
C3 : 0.03 /JF. disc type
C4 : 470 pi=; feed-through type,
Allen-Bradley FA5C, or equivalent
C S ' CS : 0.005 ",F, disc type
L 1: O.22I'H,rf choke
R,: 5.1 n,l/2Wcarbon

Dimensions in Inches and Millimeters
Note 1: Dimensions in parentheses are in millimeters and are derived
from the basic inch dimensions as indicated.
Note 2: Produced by removing upper layer of double-clad, Teflon

board, Budd Co. Polychem Oiv. Grade lOST, 1 oz. 1/16 in.
thick, k = 2.6). or equivalent.

Fig. 11-400·MHz narrowband amplifier test circuit for measurement of power output.

92CS·19152

C1 - 0.8-10 pF, piston type, JOhansono 3957*
C2 ·18 pF, silver mica
C3· 33 pF, chip type, Allen-Bradley· 816*
C4 ·47 pF, chip type, Allen·Bradley B16*
C5, C6 • 62 pF, chip type, American Technical Ceramics· ATC-1 00*
C7 - 0.8·20 pF, piston type, Johanson 4802*
C8 ·15 pF, silver mica
Cg ·1000 pF, feedthrough, Allen-Bradley FA5C*
ClO - 1 /JF, electrolytic
L1; L5, L7 . Two turns**
l2· 1/2·io. 112.7 mml length of No.20 wire

L3 . Inductance of 5/32·in. (3.97 mm) long base lead of 2N5919A
l4 - 0.1 jJH, r·f choke, Nytronics·*
l6. 1·1/2 turns 4 *
Rl - 5.1 n, xz·w carbon
* or equivalent
°Johanson Mfg. Corp., Boonton. N. J. 07005
Allen·Bradley Co., Milwaukee, Wisc.
American Technical Ceramics
Huntington Station N.Y. 11746
Nytronics Inc./,Berkeley Heights, N.J.
** No.20 wire, 14 turns/inch, 5/32 in. 13.97 mmllD, 5/32 in. (3.97 mml
leads.

Fig. 12-225 to 400-MHz broadband amplifier circuit.

161

File No. 440

oornLJD

RF Power Transistors

Solid State
Division

2N5920

2-W,2-GHz,Emitter-Baliasted
Silicon N-P-N Overlay Transistor
For UHF/Microwave Power Amplifiers, Microwave
Fundamental-Frequency Oscillators and
Frequency- Multipliers
Features:

JEDEC TO-215AA

• 2-W output with 10-dB gain (min.) at 2 GHz
• 3-W output with l2-dB gain (typ_) at 1 GHz
• Ceramic-metal hermetic package with low inductance and
low parasitic capacitances
• Stable common-base operation
• For coaxial, microstripline, & lumped-constant circuit
applications
• Integral emitter-ballasting resistors

RCA 2N5920· is an epitaxial silicon n-p-n planar transistor
featuring the overlay multiple-emitter-site construction. It is
intended for solid-state equipment for microwave communi-

The ceramic-metal coaxial package of the 2N5920 features
low parasitic capacitances and inductances which provide for
stable operation jn the common-base amplifier configuration.

radar, distance measuring equipment and collision avoidance

Ideal as a driver for the 2N5921, this transistor can also be
used in large signal applications in coaxial, stripline and

systems_

lumped-constant circuits.

Integral emitter-ballast resistance is employed for improved
ruggedness and increased overdrive capabil ity_

• Formerly RCA Oev. Type No. TA7;487.

cations, S-band telemetry, microwave relay link, phased-array

MAXIMUM RATINGS, Absolute-Maximum Values:
• COLLECTOR-TO-BASE VOLTAGE ________ ............. _ .............. _..

VCBO

• COLLECTOR-TO·EMITTER VOLTAGE:
With external base-to·emitter resistance (RBE) = 10 n, sustaining ............. .
• EMITTER·TO·BASE VOLTAGE ........................ _................ .

VCER(sus)

• DC COLLECTOR CURRENT (CONTINUOUS) .......... _ ................... .
• TRANSISTOR DISSIPATION:
At case temperature up to 750 C ...................................... .
At case temperatures above 750 C, derate linearly

VEBO
IC

50

V

50

V
V

·3.5
0.25

A

PT
3.5
0.02B

W
W/oC

For point of measurement of temperature
(on collector terminal), see dimensional outline.
• TEMPERATURE RANGE:
Storage and Operating (Junction) ..................................... .
• CASE TEMPERATURE (During Soldering):
For 10 s max ..................................................... .

*

-65 to +200
230

oC
oC

In accordance with JEOEC registration data format (J5-6-RDF-3/JS-9-RDF-71.

162

11·73

File No. 440 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5920
ELECTRICAL CHARACTERISTICS. at Case Temperature (TC) = 2SOC, unless otherwise specified.

.. _--_._-_.

- -

TEST CONDITIONS
CHARACTERISTIC

.

SYMBOL

DC
COLLECTOR
OR BASE
VOLTAGE (VI
VSE
VCE

Collector-Cutoff Cunent

Collector-to-Base
BreakdoWn Voltage

V(BR)CBO

Collector-to-Emiller
Breakdown Voltage:
With external base-to-emiller
resistance (RBE)= \0 n

V(BR)CER

Emiller-to-Base
Breakdown Voltage
Collector-to-Emiller
Saturation Voltage
Thermal Resistance:
(junclion-to-

ffi

...'"

U

50

.

0

40

~

."
I

..0

0.02

0.04

0.06 0.08 O.tO
INPUT POWER (Pte) -

0.12

w

0.14

>-

60 ~

I<

"'"~

SOl:;

..e

§"

0

40§
6

30 u

0.5

20
0.16

Fig. 3 . Typical output power and collector efficiency vs.
;.~put power for l-GHz common·base power amplifier.

..
.
'"u

Poll

I..

I-

508
«)

~

!.!

2.5

14

16
18
20
22
24
26
28
30
COLLECTOR-TO-BASE VOLTAGE (Vcs)-V
92CS-I1I08

Fig. 4 - Typical output power and collector efficiency vs.
collector-to-base voltage in a 2-GHz common-base amplifier.

1000

CASE TEMPERATURE tTc)= 100 "C

6

"'

E

I
~
I2

4

HOT-SPOT TEMPERATURE

IctMAXl CONTINUOUS

ltTJ"~"200"C

250
2

......

.'"

a:: 100

a •
'"

!

6

4

NOTE:
TJS IS DETERMINED BY
USE OF INFRARED
SCANNING TECHNIQUES

:3

2

I

10
G

B 10 I

2

4

G

B 100

COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V
92CS-22B56

Fig. 5 . Block diagram of test set-up for measurement of
output power from 1.0- or 2-GHz common·base amplifier.

164

Fig. 6 - Maximum operating area for forward-bias operation.

File No. 440 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~2N5920
DESIGN DATA

-100

-so

0
50
100
150
200
COLLECTOR TERMINAL TEMPERATURE-oC
92CS-20627

Fig. 7 . Typical large'signal series input impedance or
large-signal collector load impedance vs. frequency.

Fig. 8 . Temperature derating of power dissipation of the
2N5920.

APPLICATION DATA
.116 HOLE 12.841
.200 DEEP {5.0a)

INPUT CONNECTOR
GENERAL RADIO No. GRB74
TYPE -N" MALE

.777

2N5920

_-f.I_ _ _ _-,• For coaxial, microstripline. & lumped-constant
ment for microwavl' communications. S-band telemetry,
circuit applications
micfO\\"aVC relay link. phased-array radar. dislam.'(l
configuration.
This transistor can be used in large
measuring equipment and collision avoidanl'£.' systems.
signal applications in coaxial, striplin!', and lump,-"IIntegral emitter·ballast resistance is employed for improved
ruggedness and increaseil overdrive capability.
constant circuits. The 2N5fl21 can withstand load mi Amatch conditions at2GHzup toVSWR of 10:1 (all phases)
The ceramic-metal coaxial package of the 2N5fl21
in the common-base circuit shown in Fig. 9.
features low parasitic capaeitanc!'s ,md inducl!U1ces which
• Fornwrly RCA nt·\,. Typf' ~o. 'fA720G.
provide for stable opl'ration in thl' common-hase runpiif'il'r

MAXIMUM RATINGS. Absolute·Maximum Values:
*COLLECTOR·TO·BASE VOLTAGE ............................... VCBO
* COLLECTOR·TO·EMITTER VOLTAGE:
With external base-to-emitter resistance (R BE ) = 10
VCER

50

V

50

* EMITTER·TO·BASE VOLTAGE .................................. VEBO
* DC COLLECTOR CURRENT (CONTINUOUS) . . . . . . . . . . . . . . . . . . . . . . .. IC
TRANSISTOR DISSIPATION:
PT
* At case temperatures up to 25°C ............................... .
* At case temperatures above 25°C, derate linearly ................... .

3.5

0.7

V
V
A

14.5
0.083

W
WPC

-65 to + 200

°c

230

°c

n ................

*
*

TEMPERATURE RANGE:
Storage and Operating (Junction) ................................ .
CASE TEMPERATURE (During soldering):
For 10 s max ................................................ .

'In accordance with JED EC registration data format (JS·6· RD F·3/JS·9 RD F· 71.

168

11·73

File No. 427 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5921
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tcl

= 25°C , unless otherwise specified.

STATIC

SYMBOL

CHARACTERISTIC

ICES
Colieclor'Cutoff Current

ICES
(TC =!OOOC)

Coliector-to·Base
Breakdown Voltage

V(BR)CBO

Collector-to-Emitter
Breakdown Voltage:
With external base-to·emitter
resistance (RBE) =10 D

V(BR)CER

Emitter-to'Base
Breakdown Voltage

V(BR)EBO

Coliector-to·Em itter
Saturation Voltage

VCE(sat)

Thermal Resistance:
(J uncti on-to-F lange)

R eJF

DC Collector
or Base
Voltage (V)

TEST CONDITIONS
DC
Current
(mA)

VCE VBE
0
45
45

LIMITS
Min.

Max.

-

2

-

5

5

50

-

V

10

50

-

V

0

3.5

-

V

100

-

1

V

-

12

°C/W

Min.

LIMITS
Max.

IC

IB

IE

0
0

0.1
20

UNITS

.mA

DYNAMIC

CHARACTERISTIC

Output Power
PIB = 1W(See Fig. 9)
Power Gain
POB =5W
Collector Efficiency
POB =5W
Collector-to-Base Capacitance
VCB =30V

SYMBOL

TEST CONDITIONS
Frequency
DC Collector
(f)- GHz
Supply Voltage
(VCC) - V

UNITS

POB

2

28

5

-

'W

GPB

2

28

7

-

dB

'1C

2

28

40

-

%

1MHz

-

-

8.5

pF

Cobo

*In accordance with JEDEC registration data format (JS·6-RDF-3/JS-9-RDF-7).

TYPICAL APPLICATION INFORMATION

CIRCUIT & FREQUENCY

See Fig.

.-

Coaxial-Line
2-GHz Amplifier
1.2-GHz Amplifier

9

DC Collector
Supply Voltage
(Vee) - V

Input Power
(PIB) - W

Output Power
(Po B) - W

28
28

1
0.75

10

6

Microstripline
2-GHz Amplifier

11

28

1

5

Lumped-Constant
1.4-GHz Amplifi er
I·GHz Amplifier

15
14

28
28

1
1

10.6

Microstripline
1.2-1.4 GHz Tunable asci lIator

16

28

-

4

6.8

169

2NS921 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 427
PERFORMANCE DATA

I
. INPUT POWER (P IB ) -w
9ZCS-I~676RI
Fig. 2 - Typical power output or collector efficiency
vs. power input at 2 GHz for circuit shown in Fig. 9.

FREQUENCV (I)-GHz

Fig. 1 - Typical output '!ower vs. frequency_

j,>
100

80

~
"~
~

60

~

8
0.4
0.6
O.B
INPUT POWER(P1S)-W

26

Fig. 3 - Typical power output or collector efficiency
vs. power input at 1.2 GHz .for circuit shown in Fig. 9.

28

VOLTAGE (Vcc l -

92CS-15670RI

30
V

92CS-15668RI

Fig. 4 - Typical power output or collector efficiency
vs. collector supply voltage.

1000 CASE TEMPERATURE ITel" IOOoc
7

.

E.

•

Ie (MAX)

CONTINUOUS

.

f\(~-SPOT
TEMPERATURE

I

8
ffi

"\

4

(T JS1" 200°C

2

'\

.

~,OO

~
DOUBLE STUB TUNER

MICAOLAB 52-05H OR
EOUIVALENT

g

_ _..L_ _ _ _ _-'

~

•

4

NOTE:
TJS IS DETERMINED BY USE OF
INFRARED SCANNING TECHNIQUES

2

Fig. 5 -Block diagram of test set-up for measurement of
output power from 1.2 - or 2-GHz common-base amplifier.
6

B 10

6

8 100

COLLECTOR-TO-BASE VOLTAGE (Veal-V
92CS-22854

Fig- 6 - Safe operating area lor de operation.

170

File No. 427 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5921
DESIGN DATA

COLLECTOR· TO-BASE VOLTAGE (Veo) _ v

FREQUENCY (I}-GHt

ms,IS611RI

Fig. 7· Typical large.signal series input imperlance or
large-signal collector loarl imperlance vs. frequency.

Fig. 8 - Typical collector-to-base capacitance vs.
collector-to-bau voltage.

APP LICA TION IN FORMA TION

CIRCUIT

C1
pF

C2
pF

92CS-15666RI

" Use only in the 2-GHz coaxial-line power amplifier circuit.
• Use only in the 1.2-GHz coaxial-line test circuit.
• Johanson Mfg. Corp •• Boonton. N.J. 07005

C4
/LF

C5
pF

C6
pF

C7

1-10 1000 1000 0.01 1-10

- -

2 GHz
(Test
Circuit)

1-10 47

-

470 0.01 1-10

C8
pF

pF

1.2 GHz
(Test
Circuit)

2 GHz
(Amplifier) 1-10 47
Vee· 28V

C3
pF

R

n

0.3-3.5 0.75

-

470 0.01 0.3-3.5 0.3-3.5 0.3-3.5

-

0.43

-

0.43

C1 & Cs. 1-10pF Range: Johanson 4581. or equivalent"
C5.

Cs. C7 & Ca. 0.3-3.5pF Range:

Johanson 4700. or equivalent"

RFC: For 2-GHz Circuits: 3 turns No.32 wire 1/16 in. (1.59 mm) ID.
3/16 in. (4.76 mm) long.
For 1.2-GHzCircuit: 6 turns No.32wlre 1/16 in. (1.59 mm) ID.
3/16 in. (4.76 mm) long•

Xl. X2: CoaxiaHine circuits, see fig. 10.

Fig. 9 - J.2/2 GHz coaxial-line amplifier circuits.

TERMINAL CONNECTIONS
Tenninal No. i-Emitter
Terminal No.2-Base
Tenninal No. 3 - Collector

WARNING: The ceramic body of this device contains
beryllium oxide. Do not crush, grind. or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

171

2NS921 _ _ _ _ _--.-.:._ _ _ _ _ _ _ _ _ _ _ _ _~_ _ _ _ _ _ _ File No. 427
APPLICATION INFORMATION (Cont'd)
COAXIAL OUTPUT
CONNECTOR*

~~#~~')-~n

.

~ u~+;:l
RFC

CIA.
.875
BOTH (22.221
ENOS!

COAXIAL INPUT

CONNECTOR1\"

!---

INPUT {XI1--..J,!io-.-OUTPUT(X2

'------1
';J2CS-15663RI

TABLE 1 - Dimensions of coaxial lines Xl & X2
for 2 GH:r. amplifier & 1.2 & 2-GHz lest circuit
DIMENSIONS
INPUT (XI)

CIRCUIT
A

B

Center
Conductor

C

A

OUTPUT (X2)
Center

E

F

Conductor

1.2 GHz
(Test

1.385 .875 .282
(35.18) (22.22) (7.16)

.825
(20.95)

1.778 1.268 .213
(45.16) (32.21) (5.41)

1.05
(26.67)

2 GHz
(Test
Circuit)
2 GHz
(Amplifier )

.940
.430 .266
(23.88 ) (10.92 ) (6.76

.380
(9.65)

1.04
.530 .266
(26.42 (13.46 (6.76

•370
(9.39)

.860
.350 .265
(21.84 ) (8.89) (6.73)

.300
(7.62)

1.06
.550 .270
(26.92 (13.97 (6.86

.385
(9.78)

Circuit)

Dimensions in Inches and Millimeters

Dimensions in parentheses are in millimeters and are
derived from the bas ic inch dimens ions as indicated•
MATERI AL: Center conductor - copper

Outer conductor for input & output- brass
• Conhex 50·045·0000 Sealectro Corp.;.or equiv.

Fig. 10 - Constructional details 011.2/2 GHz coaxial-line test circuits.

CI,eS: 300 pF disc ceramic

fIG = son)
RCA 2N5921

\

C2,C3: 470 pF, feed through, Allen-Bradley FA5C, Dr equivalent
C4: 0.01 f.LF, disc ceramic

l'

R: 0.43 [)
RFC: No.32 wire, 0.4 in. (1.02 mm) long
Xl: TAPERED MICROSTRIPLlNE0.15 in. (3.81 mm) wide, input end
0.30 in. (7.62 mm) wide, output end
0.525 in. (13.33 mm) long
0.005 in. (0.13 mm) thick, copper

·SHORT SECTION OF
TRANSMISSION LINE
FORMED BY COLLECTOR STUD &SURROUNDINGMETAL BAR (CHASSIS)
••• See Fig. 12•

X2: UNIFDRM MICROSTRIPLlNE0.25 in. (6.35 mm) wide
0.36 in. (9.14 mm) long
0.005 in. (0.13 mm) thick, copper
DIELECTRIC MATERIAL: 0_5 in. (12.7 mm) wide
0.75 in. (19.05 mm) long
0.005 in. (0.13 mm) thick
92CS-15667RI

DuPont H-film, or equiv.
NOTE: See Fig. 12 fo, suggested mounting arrangement of 2N5921.

. "'WITH SOME DEVICES,
LOAD END OF X2 MAY
REQUIRE kSLIGHT TAPER
TO INCREASE Zo FOR
OPTIMUM MATCH CONDITION.

Fig.·l' - Typical circuit lor 2-GHz grounded-base microstripline power amplilier.

172

File No. 427_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5921
APPLICATION INFORMATION (Cont'd)

BERYLLIUM OXIDE
OR BORON NITRIDE

DIELECTRIC
MATERIAL
(SEE FIG III

INPUT (EMITTER) LINE
(COPPER SHEETl

X,

NOTE; FOR DIMENSIONS OF XI AND Xl SEE FIG II

Fig. 12. Suggestecl mounting arrangement of the 2N5921
in a microstripline circuit.

~XIDE

BERYLLIUM
OR
BORON NITRIDE

\

H-FILM
OUTPUT CIRCUIT

Fig. 13 .Suggestecl mounting arrangement of components
for 2·GHz micros trip line circuit shown in Fig. 11.
C1 , C7 : SlOpF, ATC·200"
C2, CS : l-lOpF, Johanson 29S4"
C3 : 10pF, ATC-100"
C 4, C S: 470pF, feed·through type, Allen·Bradley FASC
Ll: 3.7nH
L 2 : O.SnH
L3: 2.3nH
R: 0.47

i1

RFC: 5 turns, No. 28 wire, 0.05 in.
(1.27 mm) 1.0., 0.4 in. (10.lS mm) long.
Bandwidth

Vee: zav

= 100MHz (1 dB)

*Or equivalent
American Technical Ceramics, Huntington Station, N.Y. 11746

Johanson Mfg. Corp., Boonton, N.J. 07005

Fig. 14· Typical lumpecl-constant circuit for I-GHz

power amplifier.

C1 , CIO: S10 pF, ATC-100'
C2, C9: 0,3·3SpF, Johanson 4700"

RCA
2N5921

C3: Single, parallel-plate variable capacitor approx. 19 pF
C4. C7: 0.01 mF, disc ceramic
CS, CS: 470pF, feed-through type, Allen-Bradley FASC

Ca: 1-10pF, Johanson 2954* (series resonant
in this frequency range and used as a variable inductor)

L l : 3.4nH
L 2 : 2.SnH
R: 0.47
Vee· 2BV

*Or equivalent
American Technical Ceramics, Huntington Station, N.Y. 11746
Johanson Mfg. Corp., Boonton, N.J. 07005

i1

RFC: S turns; No. 28 wire; 0.05 in. (1.27 mm) 1.0.,
0.4 in. (1O.1S mm) long.

Fig. 15· Typical lumpecl-constant circuit for

1.4 GHz power amplifier.

113

2NS921 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 427
APPLICATION INFORMATION (Cont'd)

Fig. ". Suggested mounting arrangement of components for 1.4·GHz
lumped.constant power amplifier circuit shown in Fig. 15.

Cl: 300pFI disc ceramic

er

x
OFe

(ZL"

son)

OFer

e,

c'~

0,
0,
- Vee

Or
Vee" 2av

qm·-I-I91

OJohanson Mfg. Corp., Boonton, N.J. 07005

C2, C4: 470pF, feed·through type,
Allen·Bradley FASC, or equivalent
C3: 0.3·3.5pF, Johanson 4702, or equivalent'
LI : 1.3 in. (33.02mm) length of 500 coaxial line
RI : 12000
R2: ()"2500
R3: 50
RFC: 3 turns, No. 29 wire, 0.06 in. (1.59mm) 1.0.,
0.18in. (4.77mm) long.
X: TAPERED MICRDSTRIPLINE0.1 in. (2.54 mm) wide, input end
0.24 in. (6.09 mm) wide. output end
0.475 in. (12.06 mm) long
0.005 in. (0.13 mm) thick, copper
DIELECTRIC MATERIAL: Same as that for Fig. 11
(See Fig. 12 for mounting of output section)

Fig. 17· Typical circuit for tunable 1.2 ·1.4 GHz, 4·W microstripline power oscillator.

SOLDERING INSTRUCTIONS
When soldering the 2N5921 into a microstripline or
lumped-constant circuit, the collector and emitter
terminals of the device must be pretinned in the region
where soldering is to take place. The device should
be held in a high-thermal resistance support for this

174

tinning operation. A 60/40 resin-core solder and a
low-wattage (47 watts) soldering iron are suggested for
the pretinning operation. The case temperature should
not exceed 2300C for a maximum of 10 seconds during
tinning and subsequent soldering operations.

File No. 454

RF Power Transistors

OO(]5LJ[]
Solid State
Division

2N5995
7-W, (CW)175-MHz Silicon
N-P-N Overlay Transistor
For 12.5-Volt Applications in VHF
Communications Equipment
Features:
II

"
•
"
"
"

TO-216AA

Low-inductance radialleads
Herme1icallv sealed ceramic-metal package
Electricallv isolated mounting stud
7 watt (min.) output at 175 MHz
9_7 dB (min_I gain at 175 MHz
Infinite load mismatch tested at 175 MHz

RCA type 2N5995a is an epitaxial silicon n-p-n planar transistor featuring overlav emitter-electrode construction_ This
type features a hermetic ceramic-metal package having leads
isolated from the mounting stud. This rugged, low-inductance ..
radial-lead type is designed for stripline as well as lumpedconstant circuits.
This transistor is completely tested for load-mismatch
capability at 175 MHz with an infinity-to-one VSWR
through all phases under rated power.
8Formerly RCA Oev. TypeTA7922

300

'COLLECTOR-TO-BASE
VOLTAGE • . . . . . .

V

36
14

V
V

• EMITTER-TO-BASE VOLTAGE _ . . . . . VEBO

3.5

V

• COLLECTOR CURRENT:
Continuous • . . . . . • . . • . • . . . Ie

1.5

A

• TRANSISTOR DISSIPATION:
At case temperatures up to 750 C .
At case temperatures above 75°C.
• TEMPERATURE RANGE:
Storage & Operating (Junction)

.o92CS_t!396

Fig. 1 - Typical rf output power vs. frequency.
36

. . . . . . - VCBO

• COLLECTOR-TO-EMITTER
BREAKDOWN VOLTAGE:
With base connected to emitter • . . . . V(BR)CES
With bas. open . . . . . . . . . . . _ . VIBRICEO

350

FREQUENCY (f)-MHz

MAXIMUM RATINGS,.Absolute-Maximum Values:

10.7
W
See Fig. 9

-65 to +200

• CASE TEMPERATURE
(During soldering):

For 10 5 max.. . . . . . . . . . . . . .

oC

8 COLLECTOR SUPPLY VOLTAGE IVCC}aI2.5V
CASE TEMPERATURE ITe)· 25°C

., ••

~

~
ffi

.~
~
~

Z

~

'"

h

2

.. 'tJ~

I

o.• t--.~
0 .•
0.'

~

~ ~ /'
:;..--- . /

~~ / '

:/

0.2

0.1
100

1.5

8
FREQUENCY {f)-MHz

*In accordance with JEDEC registration data format JS-6
RDF-3/JS-9 RDF-7.

lG-70

1000

92CS-I7397

"Fig_ 2 - Typical rf input power vs_ frequency.

175

2N5995 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 454
ELECTRICAL CHARACTERISTICS, Case Temperature (Tel = 250C
STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC
Collector
Voltage·V

DC
Base
Voltage·V

VCE

VBE

DC
Current
rnA
IE

LIMITS

IB

IC

MIN.

UNITS

MAX.

Collector-Cutoff Current

With base. open

ICEO

10

base connected
to emitter

ICES

12.5

-

0

With

0

2.5
rnA

5b

Collector-ta-Base
Breakdown Voltage

5

36

-

75"

14

75"

36

-

0

3.5

-

V

11.7

oC/W

0

VISR) CSO

V

Collector-ta-Emitter
Breakdown Voltage:

With base open

0

VISR) CEO

With base connected

to emitter

0

VISR) CES

V

Emitter-ta-Base
Breakdown Voltage

VISR) ESO

Thermal Resistance
(Junction-ta-Case)

°J.C

2

bTC -1000C

a Pulsed through a 25-mH inductor; duty factor"" 50%

DYNAMIC
TEST CONDITIONS
Input Power
(PI E) ·Watts

Frequency
(f) ·MHz

Power Output

POE

12.5

0.75

Power Gain

GpE

12.5

0.75

'1c

12.5

LM

12.5

Cob

12

CHARACTERISTIC

.

LIMITS

SYMBOL

DC Collector
Supply (VCC) ·Volts

Collector Efficiency
L.oad Mismatch

IF;g. II)
Collector-toBase Capacitance

MIN.

MAX.

176

7

-

175

9.7

0.75

175

65

0.75

175

GO/NO GO

-

1

-

-

80

UNITS
w
dB

%

pF

• In accordance with JEDEC registration data format J5-6 RDF-3/JS-9 RDF-7

TERMINAL CONNECTIONS
Terminals 1, 3 - Emitter
Terminal 2 - Base
Terminal 4 - Collector

WARNING:

RCA Type 2N5995 should be handled

with care. The ceramic portion of this transistor contains
BERYLLIUM OXIDE as a major ingredient. Do not
crush, grind. or abrade these portions of the transistor
because the dust resulting from' such action may be
hazardous if inhaled.

176

File No. 454 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5995
PERFORMANCE DATA
COLLECTOR SUPPLY VOLTAGEeVCCloI2.5 v
CASE: TEMPERATURE

ITC).2~·C

15

PoE

.'"
~

0-

=>

i!:

7

o=>

65

I
COLLECTOR SUPPLY VOl.TAGE (V..cC1-\i'

0.25

o.S

0.75

I

1.25

1.5

92CS-I7399

Fig. 3 - Typical output power vs. supply voll1lge (amplifier
tunedat Vee = 12.5 Vi.

9

60
2

1.75

INPUT POWER (PIEI-W
92CS-11398

Fig. 4 - Typical output power and collector efficiency vs.
input power at 175 MHz.
6 CASE TEMPERATURE ITtlDIOO°F

COLLECTOR SUPPLY VOLTAGE (vccl-12.5 V
.
INPUT POWER (PIE1-O.75 W
FREQUENCY (f) o I7S MHz

4

..

NOTE: TJS IS DETERMINED BY
INFRARED SCANNING TECHNIQUE

E

I

2

U

IC MAX.

!:!
0-

~

,

1000

a

I~

1\

0

~

4

2

VCEOMAX.~~

100

40

50
60
70
SO
90
CASE TEMPERATURE (Tel-OC

100

110

TJS·200·C

N

8
3
30

f'-. HOT-SPOT TEMPERATURE

\

'" •

120

4

6810~1420

40

60 8 0 100

COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V
92CS-17400

Fig. 5 - Typical output power vs. case temperature.

92CS-17401

Fig.

6 -

Safe area for dc operation.

DESIGN DATA
40

COLLECTOR SUPPLY VOLTAGE (Vee) "12.5 v
OUTPUT POWER (POElo:7 W
CASE TEMPERATURE (TC) •• 2SoC
RESISTANCE

COLLECTOR SUPPLY VOLTAGE (Vccl=12.S V
OUTPUT POWER (POE)"'7W
CASE TEMPERATURE (TC)-2S0C

Re (ZIN)

SERIES INPUT IMPEDANCE·

[R,(lINI + i ImIZINI]
-I
100

150

200

250
300
350 400
FREQUENCY ( f I - MHz

450

500

92CS-17402

Fig. 7 - Typical large-signal series input impedance vs.
frequency.

100

ISO

200

250
300
3S0
400
FREQUENCY If) - MHz

4S0

SOO

92C$-17403

Fig. 8 _ Typical large.signal parallel collector load resis.
I1Ince and parallel output capacil1lnce vs. frequency.

177

2N5995 _ _ _~_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 454
APPLICATION DATAVee" 12.5V

TO

SUPPLY

Lr\

COLLEC~
TO

92CS-17392

L, . 1/2 turn No. 14 wire, 1/4·io. 1.0.
RFC - Z = 450 n, Ferroxcube VK·200·09/3B or equivalent
Ct· 7-100pF, Area 423 or equivalent

CASE TEMPERATURE (TC)_DC
92CS-17404

C2.4.40 pF, Area 422 or equivalent

Fig. 9 - Dissipation derating.

C3' O.lIJ.F ceramic
C4 - 0.001 IlF feedthrou!t1
CS' 62 pF silver mica

CS' 14-150pF. Area 424 or equivalent
C7 ·24-200 pF • Areo 425 or equivalent
Tl - Twisted pair of No.20 enameled wire; 14 turns/in.
Formed in a loop 3/8 in. diameter. cross connected
(End of one winding connected to beginning of other)

Fig. 10 - 175-MHz amplifier for measuring power output
and power gain.
VCC"I2.SV

175 MHz:

DRIVER

r--

175 MHz
AMPL.IFIER

R.fir
8

I--

C9

T>i

rr=

~

STUB

92C5-17394

92CS-I1393

Fig. 11 - Test setup for testing load mismatch capability.

Cl. C2. C6: 8-60 pF, ARca 404 or equivalent
C3, Ca: O.02IlF disc ceramic
C4, Cg: O.OO1IlF feedthrough
C5: 15 pF silver mica
C7: 14·150 pF, ARCa 424 or equivalent
Cl0. Cll: 24·200 pF. ARCa 425 or equivalent

SPECIAL PERFORMANCE DATA

Ll:

The infinite'VSWR load·mismatch capability of the tran·
sistor can be demonstrated in the following test:
1. The test setup is shown in Fig. 11.
2. The tuning stub is varied through a half wavelength.
which effectively varies the load from an open circuit
to a short circu it.
3. Operating conditions are as follows: VCC = 12.5 V.
RF input power = O.75W._
Care should be taken not to exceed the maximum junction
temperature by providing sufficient heatsinking during the
above test to prevent device damage or degradation.

178

L2,

L5:
L3:

'-4:
L6:
L7:
Rl. R2:

Fig.

12 -

2 Turns No. 18wire,l/4-in. 1.0.,
1/16·in. long
RFe. z = 450 O. Ferroxcube No.
VK·200·09/38 or equivalent
1 pH, Nytronics Oeci·Ouctor or
equivalent
2 Turns No. 18 wire, 1!4·in.I.D.,
3116·in. long
3 Turns No. 16 wire, 1!4·in.I.D.,
3/8·in. long
1 Turn No. 16 wire, 1/4-in.I.D.,
3116·in. long
12 n. 1/2 W

175'MHz two·stage amplifier using 2N5995

File No. 4 8 4 - - - - - - - - - - - - - - - - - - - - - - - - - - -_ __

RF Power Transistors

OO(]3LJ[]
Solid State
Division

2N6093
75-W (PEP) Emitter-Ballasted
Overlay Transistor with
Temperature-Sensing Diode
Silicon N-P-N Device for High-Gain Linear
Amplifiers in HF Single-Sideband Equipment
Features:

TO-217 AA package

• For 2- to- 3D-MHz Single-Sideband Communications
• 75 Watts PEP Output (min.) at 30 MHz
with Gain: 13 dB (min.)
1/: 40% (min.)
IMD: 30 dB (max.)
a Low Thermal Resistance
• Isolated Pin-Pad Electrodes
• 3: 1 VSWR tested at rated power

RCA-2N6093" is an epitaxial silic~n n-p-n planar transistor
of the "overlay" emitter-electrode construction. This device
utilizes many separate emitter elements and has individual
ballast resistance in each of these emitter sites for stabilization. Linearity and greater protection from second breakdown are achieved by equalizing the current sharing between
the emitter sites.
The 2N6093 is especially designed for linear applications to
provide high power in class A or class B rf amplifier service.

The device is intended for 2- to- 30-MHz single-sideband
power amplifiers operating from a 28-volt power supply.
Forward-bias control with temperature change is obtained by
use of the built-in temperature-sensing diode.
Type 2N6093 features a molded silicone·plastic case with
low-inductance, isolated electrodes. The case provides circuit
flexibility for wiring to lumped-constant, strip-line, and
printed-board circuits.
* Formerly RCA Type No.40675.

MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-EMITTER VOLTAGE:
Base connected to emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With base open . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"COLLECTOR-TO-BASE VOLTAGE ___ . ______ . ___ ... ____ ... _______ .. _ ... __
"EMITTER-TO-BASE VOLTAGE. _ . _ .. ______ . __ . _ .. __ . ____ .... _____ . __ _
"COLLECTOR CURRENT:
CONTINUOUS ____________ .. _ .. __ ... ____ . __ . _ . _____ ... ___ .. _ . __
PEAK ___ .. ____ . ___ . ____ .. ___ . _ .. ___ .. ______ . _____ . __ -. _ ... --

VCES
VCEO
VCBO
VEBO
IC

DIODE CURRENT (DC, Max.) _ ... __ . ____ . __ . __ . _ .. ___ . . . . . . . . . . . . . . . .

IF

"TRANSISTOR DISSIPATION:
At case temperatures up to 750 C
At case temperatures above 750 C
"TEMPERATURE RANGE:
Storage & Operating (Junction)
"CASE TEMPERATURE
(During soldering):
For 10 s max. . _ .... _ ....... ______ .... _ ... __ ..... _ .......... _

PT

70
35
70
3.5

V
V
V
V

10
30
100

A
A
mA

83.3

W

See Fig. 9

-65 to +200

oC

230

oC

*In accordance with JEOEC registration data format JS·6 ADF-3/JS-9 RDF-7.

12-72

1'19

2N6093 - - - - - - - - - - - - - - - - - - - - - - - - - - - - File No. 484
ELECTRICAL CHARACTERISTICS, Case Temperature = 250 C
STATIC
TEST CONOITIONS
SYMBOL

CHARACTERISTIC

VCE
Collector·to·Emitter Breakdown Voltage:
With base connected to emitter

VBE

IE

0

VIBR1CES

With base open

DC
Current
rnA

DC
DC
Base
Collector
Voltage.v Voltage·V

V(BR)CEO

Emitter·to·Base Breakdown Voltage

V(BR)EBO

Collector·to·Emitter Cutoff Current:
Base·emitter junction shorted, TC = 550 C
(Diode Voltage = 0)

ICES

Compensating Diode
Forward Voltage Drop

VF

DC Forward·Current Transfer Ratio

20
60

UNITS
Min

Max.

200"

70

200"

35

0

3.5

-

-

30

rnA

V

Ic

ID

0

0

10

5A

6

hFE

LIMITS

-

0.8

20

-

-

1.5

V
V
V

Thermal Resistance

Junction-to-case

OJ·C

a Pulsed through a 25·mH inductor; duty factor

oc/w

= 50%.

DYNAMIC (Operating in a 30 MHz single·sideband amplifier'

TEST CONDITIONS
CHARACTERISTIC

RF Power Input' (See Fig. 12):
Average
Peak envelope (PEP)

SYMBOL

DC
Collector
Voltage·V

Power
Output
W(PEP)

Frequency
MHz

VCB VCC

POE

f

DC Collector
Bias
CurrenHnA
IC·

LIMITS

Min.

UNITS

Max.

PIE

28

37.5

30

20

-

1.88

W

PIE

28

75

30

20

-

3.75

W

Power Gain

GpE

28

75

30

20

13

Collector Efficiency

TIC

28

75

30

20

40

-

50

1A

2

-

30

20

-

-30

dB

-

250

pF

Magnitude of Common·Emitter,
Small·Signal, Short·Circuit,
Forward·Current Transfer Ratio

I

28
(VCE)

hfel

Intermodulation Distortion

IMD

Collector·to·Base Capacitance

Cobo

28

75

30

* In accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7.

180

1

dB

%

File No. 484 - - - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ __

2N6093

PERFORMANCE DATA
INPUT POWER (PIE};2.7WIPEP)
CASE TEMPERATURE (TC)~25"C
80 FREQUENCIES {f)-3D M'"Iz,

.

70

30.001 MHz

~

IMO~30d8

,.

I

~,.
u

I

~

r5

60

70

......u
12'"
~

so ~

8
~

U

~

~

~

v

~

~

u

~

~

COLLECTOR SUPPLY VOLTAGE (Vcc)-V

FREQUENCY ttl-MHz

92C5-17692

Fig. 1- Typical output power vs. frequency.

'92CS-11693

Fig. 2- Typical output power or collector efficiency vs.
collector supply voltage.

OUTPUT POWER ( POEI '" 50 W (PEP)
CASE TEMPERATURE ITel'" 2S"C
FREQUENCIES ttl; 30 MHz, 30·001 MHz

COLLECTOR SUPPLY VOLTAGE (Yecl-ZBY
SOURCE IMO '" - 45 dB

~

~

-30

a - 3D
z
o

z
o

~ -35

tr:

1-

1-

~

40

Z -45

-35

40

-45

a

20

10

30

40

50

60

70

80

o

90

10

20

30
40
50
60
OUTPUT POWER (POE)-W (PEP)

COLLECTOR BIAS CURRENT- mA
92C5-17694

Fig. 3-TvpicallMD VS. collector bias current.

"-

•

~

;

\

~~~

(,

,,~

"I>

~a

'"

<'r~
(I/,,~\.\

I
81- HOT -SPOT
61- TEMPERATURE
(TJS l=200 D C

~
8

o~

41NOTE:
TJS IS DETERMINED BY USE OF
INFRARED SCANNING TECHNIQUES
21-

01
140

"'-

.,,~
~t~

2

~

120

"l

'" I'-..

" \,

4

i

40
60
80
100
CASE TEMPERATURE !Tel-DC

80

Fig. 4- TypicallMD vs. output power (PEP).

'0.

20

70
92C5-11695

I
2

..

I I II

4

VCEO (MAXl
=35 V

2

10
COLLECTOR-TO-EMITTER VOLTAGE (VCEl-V

6

.

100

92CS-15164RI

92SS-3671RI

Fig.5-Typical RF power output and intermodulation
distortion VS. case temperature:

I

4

Fig. 6 -Safe area for de operation.

181

2N6003----~------------------------------------------

File No. 484

DESIGN DATA
COLLECTOR SUPPLY VOLTAGE (VCC)-28V
CASE TEMPERATURE (TC)&2S-C
OUTPUT POWER (POE):o75 W (PEP)
IMD t30 dB

CQLLECTOR SUPPLY VOLTAGE (Yecl-2BY
CASE TEMPERATURE (Tela 25·C
OUTPUT POWER (POE)· 75 W (PEPI

10
15
20
FREQUENCY UI-MHz

FREQUENCY (f)-MHz

92CS-11696

Fig. 7 - Typical large'signal parallel collector load resistance
and parallel output capacitance vs. frequency.

92CS-176S17

Fig. 8 - Typical large·signal series input impedance
(Rin + j Xin) vs. frequency.

~

~12S

!i
!iIDO
15

-100

_50

100
150
200
50
CASE TalPERATURE (TC)-.OC

250

300

92SS-367JRI

Fig. 9- RF dissipation derating.

CASE TEMPERATURE ITel -25·C
fREQUENCY (tI • I MHz

~

o

t;200

I•
100

10

15

20

25

30

COLLECTOR-TO-BASE VOLTAGE

35

40

45

50

(Vcal-V
92CS-17698

Fig.. 10- Typical variation of collector·to·base capacitance
vs. collector·to-base voltage.

182

D.'

D.'

D.'

D.'

1.1

...

I..

BASE· Tl).EMlnER VOLTAGE (VBE)-V

Fig. 11- Typical transfer-characteristic.

I.'
9ZSS.1675RI

File No.

484.---------------------------

2N6093

APPLICATION DATA

·2

·5

r-,I

......"---I_---+--t__;;_---=-I___I

ZIN' 50 n >-e---,l1'---.-~
VCC~+26V

VEE"-6V
92SS-3676R2

Cl. C4: lIJF. 3 V, electrolytic
C2: 32-250 pF
C3: 55-300 pF
Cs. C7: 0.0027 "F
C6: 100~F. 3 V. electrolytic

Ca: 1000 pF feedthrough
C9: 0.3 ~F. 50 V
Cl0: 170-7S0 pF
Cll: SO-480 pF

Ll: 3 turns No.14 wire, % in. 1.0. % in. long
L2: 3 turns N~.10 wire. % in. 1.0.318 in. long
L3: 3% turns No.l0 wire, 5/8 in. 1.0. % in. long

Rl.
R2.
R3:
R4:
R6:

RS: 5l0n
R5: 2 kn
33 n
loon
200 n

R7: 39 n
R9: 50 n
RlO: 24 kn
R11: loon
R12: l.Skn

RFC: Ferroxcube No.VK20()'Ol·3B. or equivalent
All resistors % watt

Fig. 12-30-MHz linear rf amplifier with temperature compensation.

Pin.
Pin.
Pin.
Pin.

TERMINAL CONNECTIONS
No.1-Emitter & Diode Cathode
No.2-Collector
No.3-Base
No.4-Diode Anode

WARNING: The body of this device contains beryllium
oxide. Do not crush, grind, or abrade that portion
because the dust resulting from such action may be
hazardous if inhaled. Disposal should be by burial.

183

- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F i l e No. 504

OO(]3LJD

RF Power Transistors

Solid State
Division

"

v~

JEDECT0-21~ ~

2N6105

2N6104
2N6105

H.""

~

2N6104
RCA HF-32

~~~
~"_ H·''''
... '

,::,...

-;;;::-

30-W 400- MHz Broadband
Emitter- Ballasted Si I icon
N-P-N Overlay Transistors
Features:
•
•
•
.•
•
•
•

5-dB gain (min.) at 400 MHz with 30 watts (min.) output
Emitter-ballasting resistors
Broadband performance (225-400 MHz)
Low-inductance ceramic-metal hermetic package
Radial leads for "microstripline circuits
All electrodes isolated from the stud (2N6105)
Flange is emitter lead (2N6104)

RCA types 2N6104 and 2N6105·are expitaxial silicon n-p-n
planar transistors with overlay multiple-emitter-site construction and emitter-ballasting resistors. These transistors
are intended for use in large-signal high-power cw and pulsed
amplifiers in vhf/uhf communications equipme;,t..

The ceramic-metal hermetic packages have low parasitic inductances. and are ideally' suitad for use in microstripline
and lumped-constant broadband and narrow-band amplifiers.
• Formerly RCA Oev. Nos. TA7707 and TA7706. respectively.

MAXIMUM RATINGS. Absofute.-Maximum Values:
• COLLECTOR-TO-EMITTER VOLTAGE:
With base open _.............. _.............. _.............. - - . . . . ..
• COLLECTOR-TO-BASE VOLTAGE ... - .... - - ...... _.......... - ... _.......
• EMITTER-TO-BASEVOLTAGE .... - .... ---.-.- .. _......... -- ... - ... _...
• CONTINUOUS COLLECTOR CURRENT ..... - ... - .. - - - ....... - - ... - - .. - ...
• TRANSISTOR DiSSiPATION ....... - ....... - - - _.. - _ ....... _..... _.......
At case temperatures up to 750 C _____ ... _ . _ . __ .. _ . _ . _ .. __ . _.......... .
At case temperatures above 75° C
• TEMPERATURE RANGE:
Storage & Operating (Junction) __ ... _. ___ . ___ ............. __ .... - ..... .
• CASE TEMPERATURE (During soldering):
For lOs max. .....................................................
*

VCEO
VCBO
VEBO
IC
PT

V

30
65

V

4

V

4.5

A

36
Derate linearly at 0.288

W
WIDC

- 65 to +200

oC

230

oC

In accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7.

184

·8-72

File No. 504 - - - - - - - - - - - - - - - - - - - - - - - - - 2 N 6 1 0 4 . 2N6105
ELECTRICAL CHARACTERISTICS. at Case Temperature (TCJ = 25"C unless otherwise specified
STATIC
TEST CONDITIONS
CHARACTERISTIC

DC
Voltage
V

SYMBOL

Collector-to-Emitter Cutoff Current:
Base connected to emitter, TC=550 C

ICES

DC
LIMITS

Current

UNITS

mA

VCE

VBE

30

0

IE

MIN. MAX.

IC

-

10

mA

V

Collector-to-Emitter Breakdown
Voltage:
With base connected to emitter

V(BR)CES

With base open

V(BR)CEO

Emitter-to-Base Breakdown Voltage

V(BR)EBO

Thermal Resistance (Junction-to-Case)

ROJC

aPulsed through a 25·mH inductor; duty factor

0
5

2!Xl a
2!Xl a

65

-

30

0

4

-

V

3_5

oCIW

= 50%.

DYNAMIC
SYMBOL

CHARACTERISTIC

DC Collector
Supply (Vccl-V

Output Power (See Fig. 10)
Overdrive Test (See Fig_ 10)

POE
POEO

28
28

Power Gain

GPE

28

1/C

28

Cobo

30 (VCB)

Collector Efficiency
Collector-to-Base Output
Capacitance

.

TEST CONDITIONS
Input Power Output Power Frequency
(f)-MHz
(PIE)-W
(POE)-W
400
'1uO

9.5
12_0
30
9.5

LIMITS
Min.

Max.

30

-

;j'l

UNITS

W

400

5
65

-

dB

400

-

35

pF

1

%

In accordance with JEDEC registration data format J5-S RDF-3/J5-9 ADF-7.

TYPICAL APPLICATION INFORMATION
COLLECTOR SUPPLY OUTPUT POWER
(POE)-W
VOLTAGE (Vccl-V

CIRCUIT

INPUT POWER
(PIE)-W

225-400 MHz (2N6105)&
Broadband Amplifier

28
20

30
20

5 -7_5
5 -7

400 MHz (2N6104-5)
Narrow-8and Amplifier

28

34

9_5

225-400 MHz (2N6105)&
Push-Pull Amplifier

28

60

11_5-18

- . performance can be
A Similar

COLLECTOR
EFFICIENCY
(1/C)-%
69 -77
70 -82
78

72-84

FIG_
NO.
13
13
10

16

obtained With the 2N61 04.

RCA Application Notes
AN-4421

"16- and 25-Watt Broadband Power Amplifiers Using RCA-2N591B. 2N5919. and TA7706 UHF/Microwave

AN-60lO

"Characteristics and Broadband (225-to-400-MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power

Power Transistors."
Transistors."

185

2N6104.2N6105 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 504

FREQUENCY (f)-MHz

INPUT POWER (PIE)-W
92CS-18053

92CS-18052

Fig. 2- Typical output power and co/-

Fig. I-Typicalourpurpowerva. frequency for both types.

lector efficiency vs. input power
for both types.

COLLECTOR SUPPLY VOLTAGE (Vee
INPUT POWER (PIE) = 7.5 W
40 F
4

= 28 V

=

~

!.;
o

20

10
30
I
COLLECTOR SUPPLY VOLTAGE (Vcc)-V

6

~
!:!

IDD

110

Fig. 4- Typical output power V$. case
temperature for both type.s.

•1 1 - - - + - - - + - 4 - NO~~s: IS DETERMINED BY USE OF
INFRARED SCANNING TECHNIQUES
~

4

¢

50
60
70
80
90
CASE TEMPERATURE (TCI--C

92CS-18055

92CS-IB054

Fig. 3- Typical output powsr and co/lector efficiency vs. collector sup-ply voltage for both types.

10

40

2

I-

HOT~SPOT TEMPERATURE

""" 1/ ,')' 2~0"C

r-

I

~

0:

~

I

"g •
0:

6

~

\

4

8

21---+---+-+-4-4---~-+~1-~-+~
0.1
6

8

10

6

2

8 100

COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
92C5-18056

Fig. 5-Safe area for de operation for
both types.

186

92CS-lfl057

Fig. 6-Dissipation derating for class C
operation for both types.

120

File No. 504

2N6104,2N6105
FREQUENCY If)'" I MHz
CASE TEMPERATURE (Tel= 25°C

u~

-

'"~

50

0::

COLLECTOR SUPPLY VOLTAGE (VCCI-28 V
OUTPUT POWER (POE) "30 W
CASE TEMPERATURE (TC)·2S"C

0 40

'"u
uz'"
~~30

,
~

!

"
di
1--

40

f3~

1l

'" 30
020

'r

~
~

8

10

o

5

10

15

20

25

200

30

300

400

500

FREQUENCY (f)-MHz

COLLECTOR - TO - BASE VOLTAGE (Vce)-V

92CS-J8061

9ZCS-17ZI6R2

Fig. 7- Typical variation of collt1Ctor-tobase capacitanc.e ",s. collector-tobase voltage for both types.

Fig. 8- Typical large-signal parallel col-

lector load resistance and parallel
output capacitance
for both IYpes.

vs.

frequency

COLLECTOR SUPPLY VOLTAGE (Vccl-28 V
OUTPUT POWER (PoEI-3D W
CASE TEMPERATURE (Tc)-25 D C

SERifS INPUT IMPEDANCE ..

-,

[R,(Z'N'+ JIm(Z'NI]

200

300
400
FREQUENCY (f)- MHz

500
92CS-18062RI

Fig. 9- Typical large-signal series input
impedance VB. frequency for both
IYPes.

CI ,C"C7 -1000 pF :IP. ATC.IOO·
•
C2,C4-1·20 pr AlR VARI .... LE. ~OHANSON 4aoz
C3-I!5Pf' SILVER MICA
C&-I,.r E1..ECTR1lLYTlC
LI-O.I,ut RrCHOIlE
RI-S.IA 112 •

HOTE'POINTSOfAPPLICATIONFORCIAHOCrARE
SHOWN ON TilE INPUT AlIO OUTPUT STRIPS
IN THEORAWING AT RIGHT • • ,
~OKloNSON

....... urACTURING CORP. BOCINTON,N.J O1OOS
.... ERICAN TECHNICAL C[RA"'ICS HIJNTINGTCWSTATION.N.V.11746

·PROOUCEOIIYREMOVINGUPPERLA'l'ER
OfOOU8LE-CLAOTErLONBOARO,
10l.,1I32IN,THICK,.1·26I,OREOUIVALENT
.... OI .. fN$IONSINPARENTHESESARE
MILLI .. ETERS .

• -OREOUIVALENT

Fig. 10-40fJ.MHz amplifier test circuit for mellsurement of output power for both types.

187

2N6104. 2N6105 - - - - - - - - - - - - - . . , . . . - - - - - - - - - - File No. 504

I

..

""ii:

~7

50

..ffis

..

z

15
..

I

ez

60

.

'" 4

CASE TEMPERATURE (TC)"25 D C

5

COLLECTOR SUPPLY VOLTAGE (Vee) ::2ev

rO:lo::

OUTPUT POWER (POE) • 30 W

250

275

300

325

i

350

375

1:1
400

10:1

~

VSWR
1:1

225

250

275

300

325

350

92cs-.e058

400

92CS-IB059

Fig. 12-Typical performance of a 225-400-

225-400~

MHz amplifier using RCA 2N6105
in circuit of Fig. 13, at Vee =28 v.

MHz amplifier using RCA 2N6105
in circuit of Fig. 13, at Vee =- 20 V.

.,

rt:, '
Vee
92CS-IB060

8.2 pF chip. Allen-Bradley·
18 pF silver mica
33 pF chip, Allen-Bradley·
47 pF chip. Allen-Bradley·

C5':
C6:
C7:
CS:

6S pF chip. ATC-1 00·
62 pF chip. ATC-100·
11l F electrolytic
1000 pF feedthrough

Cg. C12: 1000 pF chip. Allen-Bradley·

C'O: 2' pF chip. Allen-Bradley·
ell: 6.9 pF chip. Allen-Bradley·

C13: 0.8-10 pF variable air, Johanson No.3957-

L,: 2 turns, 5/32 in. (3.968 mm) 1.0. coil
L2: 17/32 in. (13.49 mm) long wir~

L3: AFC,O.ll"H', Nytronics·
4: 5/32 in. (3.968 mml long transistor base lead
L5. L7: l3/16·in. (20.638 mml long wire
La: 9/16 in. (14.287 mmJ long wire
La: 7/8 in. 122.225 mmllong wire
R1: 5 .0n .1/4W
All wire is No.20 AWG

·Or equivalent.

Fig. 13-225-400-MHz amplifier using RCA 2N6105.

Fig. 14-Photograph of 225-40o-MHz amplifier.

188

375

FREQUENCY In-MHz

C1:
C2:
C3:
C4:

II:

'~"

FREQUENCY (f1-MHz

Fig. It-Typical performance of a

..

CASE TEMPERATURE ITe)- 25°C
COLLECTOR SUPPLY VOLTAGE (VCC)=20V
OUTPUT POWER (POE) = 20 W

'...~"

VSWR

225

.

""

1i! 5

~

File No. 504 - - - - - - - - - - - - - - - , - - - - - - - - - - 2N6104, 2N6105
2BVOC

90
m

Gp

~

t!

,

eo ~

'7

c~

g

'Ie

z6

RCA

70 "

~

ZN6J05

~

'"~5

~

~
COLLECTOR SUPPLY VOLTAGE 1VCC'-2B V
OUTPUT POWER (POE) =60 W
CASE TEMPERATURE ITel" 25"C

VSWR

225

250

275

300

325

350

375

1:1
400

T,

Cs

i

-=-;::-

2BVOC

FREQUENCY (fl-MHz
92CS-2037B

Fig. 15-Typical performance of a 225-400MHz push-pull amplifier using two
RCA 2N610S's in circuit of Fig. 16.

C1
C2

C3·C4 •
C5 ,C S
C7 ·Ca
Ll
L 2 • L3

= 2 -18 pF. Amperex HT10MA/21S-

= 5S-pF chip. ATC·l00·
= 1000-pF chip. Allen-Bradley typeo

:::: 1000 pF. feedthrough
;;; O.181lH RFC, Nytronics typeD
;;; No. 20 wire, 0.75 in.t19.05 mm)long

Tl

= coaxial line, 20 = 2Sn, 3.75 in.

T2

= coaxial line,

(95.25 mm) long
Zo'" 2Sn, 4,50 in.
(114.30 mm) long

·or equivalent
Fig. 16-225-to-4OD-MHz push-pull amplifier using two RCA 2N6105's.

Fig. 17-Photograph of 225-40Q-MHz push-pull amplifier

TERMINAL CONNECTIONS
2N6104:

2N6105:

Flange (Terminals 1,3) - Emitter

Terminals 1,3 - Emitter

Terminal 2 - Base

Terminal 2 - Base

Terminal 4 - Collector

Terminal 4 - Collector

WARNING: The ceramic heat·sink portions of these
devices contain beryllium oxide. Do not crush, grid or
abrade these portions because the dust resulting from
such action may be hazardous if inhaled. Disposal
should be by burial.

189

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 543

D\lffiLlD

RF Power Transistors

Solid State
Division

2N6265
2-W, 2-GHz, Emitter-Ballasted
Silicon N-P-N Overlay Transistor
For UHF/Microwave Power Amplifiers,
Microwave Fundamental·Frequency
Oscillators and Frequency Multipliers

Features:
•
•
•
•

RCA HF·28 PACKAGE

H·1712

VSWR capability of 00:1 at 2 GHz
2·W output with 8.2-<1B gain (min.) at 2 GHz
3-W output with 12-<1B gain (typ.) at 1 GHz
Ceramic·metal hermetic stripline package with low inductance
and low parasitic capacitances
• For microstripline and lumped'constant circuit applications

RCA - 2N6265- is an epitaxial silicon n·p·n planar transistor
featuring the overlay multiple·emitter-site construction. It is
intended for solid·state equipment for microwave communi·
cations, S·band telemetry, microwave relay link, phased·arrav
radar, distance measuring equipment, transponder, and col·
lision avoidance systems.

The ceramic·metal stripline package of the 2N6265 features
low parasitic capacitances and inductances which provide for
stable operation in the common-base amplifier configuration.
Ideal as a driver for the 2N6266 or 2N6267, this transistor
can also be used in large'signal applications in microstripline,
stripline, and lumped·constant circuits.
-Formerly RCA Dev. No. TA7993.

MAXIMUM RATINGS, Absolute-Maximum Values:
·COLLECTOR·TO·BASE VOLTAGE . . . . . . . . . . . . . . . . . . . . . . . . VCBO
·COLLECTOR·TO·EMITTER VOLTAGE:
With external base·to-emitter resistance
(RSE) = 10 n ................................... VCER
·EMITTER·TO·BASE VOLTAGE . . . . . . . . . . . . . . . . . . . . . . . . . . VEBO
·CONTINUOUS COLLECTOR CURRENT . . . . . . . . . . . . . . . . . . .. IC
*TRANSISTOR DISSIPATION:
At case temperature up to 75°C
At case temperature above 75°C
·TEMPERATURE RANGE:
Storage and operating (Junction) . . . . . . . . . . . . . . . . . . . . . . . .
·CASE TEMPERATURE (during soldering)
For 10 s max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50

V

50
3.5

v

0.275

A

6.25
Derate linearly at 0.05

V

W

wfc

-65 to +200

°c

230

°c

"In accordance with JEDEC registration data format JS-6 RDF·31J8-9 RDF-7.

19D

11·73

File No. 543 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6265
ELECTRICAL CHARACTERISTICS. at Case Temperature (Tcl = 2!t'C unless otherwise specified

STATIC
TEST CONDITIONS
DC COLLECTOR
CHARACTERISTIC

SYMBOL

OCCURRENT

OR BASE VOLTAGE
V CE

V BE

45

0

40

0

Collector-Cutoff Current

AtTc

ICES

= 55°C

Collector.to-Base Breakdown Voltage
Emitter-ta-Base Breakdown Voltage

IE

IB

IC

external base--to-emitter resistance RS E=10n
Therl"Qal Resistance: (Junction-ta-Flange)

MAX.

-

2

VIBR)CBO

0

5

50

VIBR)EBO

0.1

0

3.5

10

50

100

-

VIBRICER
10

CE sat

UNITS

MIN.

-

Collector-ta-Emitter Breakdown Voltage
Collector-ta-Emitter Saturation Voltage

LIMITS

ImA)

IV)

rnA

2

-

V
V

-

V

1

V

20

ROJF

°C/W

DYNAMIC
CHARACTERISTIC

Power Output (See Figs.5& 12)

.

Power Gain

SYMBOL

POB
GpB

Collector Efficiency

~C

Collector-te-Base Capacitance

Cabo

POWER

POWER

SUPPLY

FREQUENCY

INPUT

OUTPUT

VOLTAGE

PIBIWI

POBIWI

VCCIVI

III
GHz

28

2

2

28
28

2
2

8.2

30lVCB I

1 MHz

0.3
0.3
0.3

2.0
2.0

LIMITS
MIN.

UNITS

MAX.

-

W
dB

33

-

%

-

5

pF

·In accordance with JEDEC registration data format JS-6 ROF-3/JS-9 RDF·7.

TYPICAL APPLICATION INFORMA TlON
DC COLLECTOR
CIRCUIT AND FREQUENCY

SUPPLY VOLTAGE

INPUT POWER

OUTPUT POWER

IPIBI-W

IPOBI-W

IVccl-V
Microstripline 2-GHz Amplifier (Fig. 12)

28

0.30

2.1

Lumped Constant 1-GHz Amplifier (Fig. 10)

28

0.15

3.2

PERFORMANCE DATA
COLLECTOR SUPPLY VOLTAGE Vccl=28V
FREQUENCY (fl -2 GHI'
rCASE TEMPERATURE {Tel- 25°C

3 ,

•

t±HiS:;I+!-;-'- ~:~ ~·t~1
tt-t-+t+.
-, ,
t-+-t"'

~r,

.poe

h'

0.1

30

0.2

0.3

INPUT POWER (PIB)- W

FREQUENCY (f J-GHz

92CS-17632
9ZCS-17631

Fig. 1-Typical output power vs. frequency for common·base
amplifier in' the test set·up of Fig. 5.

Fig. 2-Typical 2-GHz output power and collector efficiency
vs. input power in the test set-up of Fig. 5.

191

2N6265 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 543
PERFORMANCE DATA (cant'd)
FREQUENCY If j- 2 GHz
INPUT POWER 1PIB):Q·3W
3 CASE TEMPERATURE 1Tcl:25°C

COLLECTOR SUPPLY VOLTAGE (Vccl'28 V
INPUT POWER (PIB1:Q.3 W
FREQUENCY (f1:2GHl

3

i~

50 rfl

;1-+"
TIJ

~

I
u

!-l-+

..

1

.
u

~

~

u

u

40 ~

+

50 z
w
u

§

30

20

40

60

80

100

22
24
26
28
20
18
COLLECTOR-SUPPLY VOLTAGE IVcc1-V

16

CASE TEMPERATURE tTc)_OC

92CS -11634RI

92CS-17633RI

Fig. 3- Typical output power and collector efficiency at
2-GHz vs. case temperature in the test set-up of
Fig. 5.

30

Fig. 4- Typical 2-GHz output power and collector efficiency
vs. supply voltage in the test set-up of Fig. 5.

10Da

CASE TEMPERATURE (T c) '" loa °C

6~---,----'--'~rr----4-----~~-+~
~

I

4~--~-----L--~~+-----~~~~-L_+~
IC IMAX ) CONTINUOUS

HOT- SPOT

~ 27:t:::~~~:~~~~~:~~~:::--;tt::::::::::::~r-(-'iJ"'~-~;_;~-~-6_;~~,E_+__I
>z
w

~ IOO~===t====~==t=~t===~~===+==~=t~
B
al~

6~---L-----L--L-~~--~~---4--4__+~

::::

4

~c:u

NOTE:
TJS IS DETERMINED BY
USE OF INFRARED
SCANNING TECHNIQUES

2~~1-+------+--+-+--I
10

=ig. 5-Block diagram of test set-up for measurement of

performance from 1- or 2-GHz common-base amplifier.

,

6

,

100

10

COLLECTOR -TO-EM!TTER VOLTAGE (VeE) -

V

Fig. 6-Maximum operating area for forward-bias operation.

TERMINAL CONNECTIONS
Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector

SOLDERING INSTRUCTIONS
When soldering the 2N6265 into a microstripline or lumpedconstant circuit, the collector and emitter terminals of the
device must be pretinned in the region where soldering is to
take place. The device should be held in a high-thermalresistance support for this tinning operation. A 60/40 resincore solder and a low-wattage (47 watts) soldering iron are
suggested for the pretinning operation. The case temperature
should not exceed 230°C for a maximum of 10 seconds
during tinning and subsequent soldering operations.

192

WARNING: The ceramic body of this device contains
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

File No. 543 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6265
DESIGN DATA
14 CASE TEMPERATURE ITe)" 25°C
FREQUENCY (f)· I MHz

C;. 15

I

E 10
w
"z

,

~

a

~ "8 6

~ 5

,!,!

0 SERIES INPUT
IMPEDANCE II
RIN + j X1N

-5

~i~;~g~

4

"LOAD.

.;

~~.

-10 ReL + j XCL

O.S

0.8

1.2
1.4
\.6
FREQUENCY (f) -

\.8
GHz

10
15
20
25
30
35
40
COLLECTOR-TO-BASE VOLTAGE (Vea)-V

2.4
92CS-19690

Fig. 7- Typical large-signal series input impedance and largesignal collector load impedance vs. frequency.

RFC

p

45

92C5-19691

Fig. 8- Typical collector· to-base capacitance vs. collector·
to·base voltage.

RFC

C2
R\

"'28 V

NOTE; AMPLIFIER MADE ON
1/32 IN. (O.79mm) TEFLON
-FIBERGLASS BOARD

0.34 O.2~

18.63!.!.1·3~
1.::1 I~

(4'lTI

0.16.
9)

0.20
('.08)

0.7

17.78)

h.~~)--I~'6
(14.22

C"C4:
C2,C3:
RI:
RFC:

h1.37~
1-(34.93)

OUTPUT
INPUT
DIMENSIONS IN PARENTHESES ARE IN MILLIMETERS AND ARE DERIVED
FROM THE ORIGINAL INCH DIMENSIONS

IOOOpF CERAMIC,ATe-IOO, OR EQUIVALENT
0.001 p.F FEEDTHROUGH
0.24(1
5 TURNS, NO. 28 WIRE, O.05IN.(1.27mml
10,0.04 IN. (I.02mm) LONG
92CS~19692

Fig. 9- Typical I-GHz microstripline power amplifier.
APPLICATION DATA
RCA
2N6265
LI

C1·C7 :
C2· C6:
C3, C5:

C4:

+Vcc

K

28

. 14"n·
I~

~75~

L 1• L4:

1000 pF, ceramic,leadless
0.35-3.5 pF, air-dieJectric,
Johanson 4701, or equivalent
1·10 pF, air-dielectric,
Johanson 2957, or equivalent
1000 pF. feedthrough.
Allen-Bradlev FA5C, or equivalent
0,01 in. (0.254,* thick.
0.157 in. (3.98)* wide copper strip
shaped as shown in inset drawing
RF choke, O.1",H, Nytronics Deci·Ductor, or equivalent

(6.9a)

92CS-I164IRI

*Note: Dimensions in parentheses are in millimeters and are derived
from the original inch dimensions shown.

Fig. IO-Typical lumped-element circuit for I-GHz power amplifier.

193

2N6265 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 543

APPLICATION DATA (cont'd)

£~
0.085
(2.16)

--I

(lli~J91

r

l-

e.

RFe

RFe

IN.

0.350

NOTE: LINE MADE ON 1/321114.
(0.79mm) TEFLON-

FIBERGLASS .BOARD

"

C"C3: O.35-3.5pF,AIR-OIELECTRIC. +Vcc
JOHANSON 4701. OR EQUIVALENT
92CS-19693

+Vcc
C"C3: FILTERCON, ALLEN-BRADLEY
SMFB-AI. OR EQUIVALENT

C2: 0.3-3.5 pF,JOHANSON 4700,

OR EQUIVALENT
C4: 300 pF. ATe-tOO, OR

L,: 1.0 IN. (25.4mm) SECTION
MINIATURE 50 CABLE
RFC: 3 TURNS, NO. 32 WIRE 0.0625
IN. (1.58mm) ID,a.187IN. (4.76
mm) LONG.

C2: IOOOpF,FEEDTHROUGH,'ALLEN BRADLEY
FAse, OR EQUIVALENT
L"L3: MICROSTRIPLlNE,20Z. COPPER-CLAD
.
1/32 IN. (0.8)- TEFLON-FIBERGLASS

0.300

B.89
7.62

0.750
0.275
0.180
0.100
0.400

1.91
S.98
4.51
2.54
10.16

92CS-19694

L2,L4; RF CHOKE, 4 TURNS
NO.28 WIRE, 0.062 IN. 11.57)10, 3/161N. (4.75)- LONG

EQUIVALENT

-NOTE; DIMENSIONS IN PARENTHESES ARE IN MILLIMETERS AND ARE DERIVED
FROM THE ORIGINAL INCH DIMENSIONS SHOWN.

Fig. ,,-TypicaI1.7·GHz oscillator circuit.

Fig. 12-Typical circuit for 2·GHz microstripline amplifier.

2 HOLES
(TO CLEAR SCREWS
USED TO HOLD
DEVICE DOWN AT
MOUNTING FLANGE)

c 1• C5 : DC-blocking capacitors
e21 C3 : Feedthrough or filter capacitors
(a) Typical circuit

Note: Dimensions in parentheses are in millimeters and are derived
from the original inch dimensions shown.

(b) Circuit shield (Place over device and screw down to
circuit board).

NOTE: The circuit shield (b) can be made as a part of a ridge in the
circuit board (a) instead of the slot shown, and the device can be
mounted upside down in a slot in this ridge for equivalent circuit
isolation. For operation in the 2-2.4 GHz range, It is recommended
that the circuit be completely shielded to prevent losses due to circuit
radiation at these frequencies.

Fig. 13- Typical circuit construction.

194

File No. 544 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

OOm5LJO

RF Power Transistors

Solid State
Division

2N6266

5-W, 2-GHz, Emitter-Ballasted
Silicon N-P-N Overlay Transistor
For UHF/Microwave Power Amplifiers,
Microwave Fundamental·Frequency
Oscillators and Frequency Multipliers
Features:
• Emitter·ballasting resistors
• VSW~ capability of = : 1 at 2 GHz
RCA HF-28 packago
H.1712

TERMINAL CONNECTIONS
Terminal1 • Emitter

Terminals 2 & 4 . Base
Terminal 3 . Collector

• 5 W output with 7 dB gain (min. I at 2 GHz
• 13.5 W output with 11 dB gain' (typ.) at 1 GHz
• Ceramic·metal hermetic stripline package with low inductance and
low parasitic capacitances

RCA - 2N6266· is an epitaxial silicon n·p·n planar tran·
sistor featuring the overlay multiple-emitter·site construction
and emitter·ballasting resistors. It is intended for solid·state
equipment for microwave communications, S·band telem·
etry. microwave relay link. phased·array radar, distance·
measuring equipment, transponder, and collision·avoidance
systems. The device can be used in large ..ignal cw or pulsed
applications over the range of 0.5 GHz to 2.4 GHz in
stripline, microstripline, or lumped'constant circuits.
The ceramic·metal stripline package of the 2N6266 features
low parasitic capacitances and inductances which provide for

• Stable common·base operation
• For microstripline, strip line, and lumped'constant
circuit applications
stable operation in the common·base configuration. The use
of emitter.ballasting resistors and the low·thermal·resistance
package provide ruggedness and reliability.
"Formerly RCA Dev. No. TA7994.
WARNING: The ceramic body of this device contains
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled, Disposal should be by burial.

MAXIMUM RATINGS, Absolute·Maximum Values:
• COLLECTOR·TO·BASE VOLTAGE . . . .
• COLLECTOR·TO·EMITTER VOLTAGE:
With external base·to·emitter resistance
(RBE) = Ion

. .................

• EMITTER·TO·BASE VOLTAGE . . . . . .
• CONTINUOUS COLLECTOR CURRENT . . . . . . . .
• TRANSISTOR DISSIPATION:
At case temperature up to 75"C . . . . . . .
At case temperature above 75D C . . . . .
• TEMPERATURE RANGE:
Storage and operating (Junctionl
• CASE TEMPERATURE (during solderingl
For lOs max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCBO

50

V

50
3.5
1

V

14.8

W

v
A

Derate linearly at 0.118 wI" C

-65 to +200

DC

230

DC

'In "ccordanco with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7.

12·71

195

2N6266 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 544

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 25"C. unless otherwise specified

STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC Collector
or Base
Voltage (V)

DC
Current
(rnA)

VCE' ,vBE

IE

IB

LIMITS

IC

Min.

Max.

-

2

UNITS

Coliector·Cutoff Current
At TC = 55·C

ICES

Coliector·to·Base Breakdown
Voltage

V(BR)CBO

0

5

50

-

V

Emitter·to·Base Breakdown
VC?ltage

V(BR)EBO

0.1

0

3.5

-

V

Coliector·to·Emitter Breakdown
Voltage
With external base·to ..mitter
resistance (RBE) = 10 n

V(BR)CER

10

50

-

V

Coliector·to·Emitter Saturation
Voltage

VCE(sat)

100

-

1

V

Thermal Resistance:
(Junction·to·Flange)

ROJF

-

8.5

45

0

40

0

20

rnA

2

·C/W

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Output Power; PI B = 1 W
(See Figs. 7 & 11)

POB

Power Gain, POB = 5 W

Frequency
(f) -GHz

DC Collector
Supply Voltage
(VCC) -V

2

28

UNITS

LIMITS
Min.

Max.

5

-

W

GpB

2

28

7

-

dB

Collector Efficiency, POB = 5 W

'IC

2

2B

33

-

%

Coliector·to·Base Capacitance
VCB=30V

Cobo

1 MHz

-

-

10

pF

*In accordance with JEDEC registration data format (JS-6 RDF-3/JS-9 RDF-7)

TYPICAL APPLICA TlON INFORMA TlON
See Fig.

DC Collector
Supply Voltage
(VCC) -V

Input Power
(PIB) -W

Output Power
(POB) -W

l-GHz Amplifier

10

2B

1

13.5

Microstripline
2-GHz Amplifier

11

28

1

6

12

28

1

12

13

28

-

3

CIRCUIT & FREQUENCY
Microstripline

Microstripline (Broadband)
1.2-1.4·GHz Amplifier

Pulsed Power:
Pulse Duration = 1.3 ms
Duty Factor = 30%

Microstripline
1.7-1.8·GHz Tunable Oscillator

196

File No. 544 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6266

PERFORMANCE DATA
14

COLLECTOR SUPPLY VOLTAGE (Vecl-2BV
CASE TEMPERATURE (Te ,- 25° C
FREQUENCY (f Ja 2 GHz

COLLECTOR SUPPLY VOLTAGE (Vee) =28 v

CASE TEMPERATURE (TC):25°C

12

,.
I

,.
I

10

10

"
1

'"

a,

~o

~

GO

poe


u
z

50

~

=>

!;

.::

~

40



o

'J'"I

~
~


~

....=>
0

u

~

50

o

~

30~

0

o

0.5

20
16

LO
1.5
INPUT POWER IPIB1-W

18

20

22

24

26

28

92CS-17646

92CS-17645

Fig. 4- Typic;;1 output povver or col/ector efficiency vs. collector supply voltage at 2 GHz in test set-up of Fig. 7.

COLLECTOR SUPPLY VOLTAGE 1VCC)=28 V
FREQUENCY (f)= 2 GHz
INPUT POWER (PIBI =I W

100Q

IdMAX.)CONTINUOUS

\

BOO

"EI

....
Z

€

5O~

...
u

40 ~


'"

~8

CASE TEMPERATURE
(TclaIOO~C

600

~
GO I

30

8

30

COLLECTOR SUPPLY VOLTAGE (VCC)-V

Fig. 3- Typical output power or col/ector efficiency vs. input
povver at I GHz in test set-up of Fig. 7.

20

~

-

.rfo.

10

u

i

z

70!!!

I

~

'C(IGIt~}

60 ..

50~8

i•
0

.,c(2 GHz)

40

50

2
0.25

20
2.25

92CS-19695

Fig. 1- Typical output power vs. frequency in the test set·
up of Fig.B.

~

2.0

INPUT POWERIPIS)-W

40
0.5

0.75

1.0

1.25

1.5

INPUT POWER (PIe) -

1.75

2.0

2.25

18

16

w

Fig.3- Typical output power and collector efficiency vs.
input power at 1 GHz in the test set·up of Fig.B.

20

22

24

26

28

30

COlLECTOR SUPPLY VOLTAGE (Vee}-Y
92C5-19340

92C5-19696

FigA- Typical output power and collector efficiency vs.
collector supply voltage.
14 COLLECTOR SUPPLY VOLTAGE

IVCC)~

90

2BV

Re~O.24n

12

5O~
40~

ro

o
ro

~

40

50

60

70

eo

90

@

92eS-I9389

Fig.5- Typical output power vs. case remperature.

202

0.25

0.5

0.75

1.0

1.25

1.5

1.75

2.0

2.25

INPUT POWER (PIS)-W

CASE TEMPERATURE 1Tel-"t

92C$-19697

Fig.6- Typical output power and collector efficiency at 2
GHz in circuit of Fig. 13.

File No. 545

2N6267
PERFORMANCE DATA (CONT'D)

COL.L.ECTOR CURRENT (Ie) .. 650 mA
I FREQUENCY {f)"1.7GHz

'"I 5

~

-

~

4

16

'5

17

18

19

00

21

~

23

24

COLLECTOR SUPPLY VOLTAGE (Vee)-V
92CS-19337RI

Fig.7- Typical output power in oscillator circuit shown in
Fig. 17.

Fig.8-810ck diagram of test set-up for measurement of rf
performance from 1- or 2·GHz common-base
amplifier.

DESIGN DATA
15

COLLECTOR SUPPLY VOLTAGE IVCCI-28V

,0

'~",
...
u

z

~

-5

" -'0

POINT FOR liN
MEASUREMENT

"5

·20
0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

FREQUENCY If 1- GHz

2.2

2.4

Fig.9- Typical large-signal series input impedance .... frequency.

4

30

.

J

~
t: 20

~
... '5

"

.6

0

g

A

8

..

'"

10

!.
rn

~

w

~

~

~

%

,2CS-ln3.

Fig.l1-Typical collector-ta-base caP.Bcitance .... collectorto-base voltage.

2.4

,---

"1\
"

HOT-SPOT
TEMPERATURE

lTJSI'200'C _

NOTE- TJS IS DETERMINED BY
USE OF INFRARED

SjNN'NG TfCHN'I"ES

'\

0
~

COLLECTOR-TO-BASE VOLTAGE (Yeo)-Y

2.2

92CS-19699

CASE TEMPERATURE
(Tel-IOO·C

'CCMAX.I CONTINUOUS

.S

~
u

~

2.0

1.4
1.6
I.B
FREQUENCY If 1- GHz

,

!;;

o

1.0

2

-h!:!

25

~

O.B

Fig.1o-Typicallarge·signal collector load impedance .... fre·
quenpy.

CASE TEMPERATURE (Tel· 2S·C
FREQUENCY (f) • I MHz

'a

I

0.6

9ZCS-19698

6

8

10

1

20
COLLECTOR-TO-BASE VOLTAGE (Vca)- v
.

~

92CS-19370RI

Fig. 12-Maximum operating area for forward-bias operation.

203

2N6267

File No. 545
APPLICATION DATA

0.30

(7.62)
~

---.1

0.50

~(l2.70)

1 0.3 • I I
-I (9.65) I-

--1..

r-;---l
'-..:!......J

~k,
-----r
~B

0.125
(3.17\-1

:....j

-.1

0.80

(20.32)

I
--.l
--I~'50

J 0.40

(3B.IO)

(10.16)

04

0.60

1I0:16Id·IILo.2211•. 24

NOTE I

(7.62)--1

(l2.19)

c l • C4 • CS : 0.3-3.5 pF, Johanson 4700. or equivalent
~,

C3: Filtercon, Allen-Bradley SMF B·A 1. or equivalent
RFC: No. 32, wire, 0.4 in. (10.16 mm) long
R 1: 024n

Dielectric material: 1/32 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit b~rd (e =2.6), Lines X 1 and X 2 are produced by

~(~r)

X2_ -(

I
~

I--

(5.58)

C" C2' C5. Cs: 0.8-10 pf. Johanson 5202, or equivalent
C3' C4 : Filtercon, Allen-Bradley SMFB-A1, or equivalent
RFC: No. 32 wire, 3 turns, 0.0625 in. (1.58 mm) 10 x 0.187 in.
RI : 1 n
(4.76 mm) long

removing upper copper laver to dimensions shown.

Dielectric material: 1/32 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit board Ie "" 2.61. Lines X, anc;l X2 are produced bV
removing upper copper layer to dimensions shown.

Fig. 13- Typical 2·GHz power amplifier circuit.

Fig. 14- Typical1·GHz power amplifier circuit.

='

0,35'
("'9)

. --1..

~x=T:o.!.

lK1~)

O,'O~~

(2.54)

.

0.48 .

NOTE I

02.19)

C1 , C:!' C6: 1·10 pFJFD Electronics, MVM010, or equivalent
CS' ~: 0.3-3.5 pF, JFD Electronics, MVM003, or equivalent
C3' C4 : '000 pF feedthrough, Allen-llradley FA5C,or equivalent
R 1 : 0.7S n

e"

Dielectric material: 1132 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit board (E' "" 2.6). tines Xl and X 2 are produced by
removing upper copper layer to dimensions shown.

Dielectric material: 1/32 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit board IE =2.6). Lines X, and X2 are produced by
removing upper copper layer to dimensions shown.

Fig.15-TypicaI1.3·GHz power amplifier circuit

Fig. 16-Typical 2.3-GHz amplifier circuit

204

C4 : 0.3-35 pF, Johanson 4700, or e.quivalent
C2,C3: Filtercon. Allen-Bradley SMF8-A 1, or equivalent
RFC: No. 32 wire, OA in. (10.16 mm) long
R,:0.24n

File No. 545

2N6267

F
0.19

0.11

L {,.•'J ~J
~

0.37

{9¥-mt
O.6~

15.24

C,. C3 : Filtereon, Allen-Bradley SMFB·A 1, or equivalent
C2: 0.3-3.5 pF, Johanson 4700, or equivalent
C4 : 300 pF, ATe-100 or equivalent
L,: 1.0 in (25.4 mm)length section miniature 50.n cable, or microstrij:
equivalent
RFC: 3 turns, No. 32 wire, 0.0625 in. 10, (1.59 mm) 10.
0.187 in. (4.76 mm) long
X 2 : 0.013 in. (0.33 mml-thick Teflon-Kapton double-clad circuit
board (Grade PE-1243 as supplied by Budd Polychem Division,
Newark, Delaware). or equivalent.
Line X 2 is exponentially tapered
Dimensions in parentheses are in millimeters and are derived from the
original inch dimensions as shown.
NOTE': Oscillator is single screw tunable 1.6 GHz to 1.8 GHz

Fig.17-Typicall.J.GHz oscillator circuit.

c 1 , C5 : DC-blocking capacitors
C2 • C 3 : Feedthrough or filter capacitors

(a) Typical circuit

0.40
2 HOLES
(TO CLEAR SCREWS
USED TO HOLD
DEVICE DOWN AT
MOUNTING FLANGE)

TERMINAL CONNECTIONS

(10.16)

J

Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector
Dimensions in parentheses are in millimeters and are derived from the
original inch dimensions as shown.

WARNING:. The ceramic body of this device contains
beryllium". oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

(b) Circuit shield (Place over device and screw down to
circuit board).
NOTE: The circuit shield Ib) can be made as a part of a ridge in the
circuit board (a) instead of the slot shown, and the device can be
mounted upside down in a slot in this ridge for equivalent circuit
isolation. For operation in the 2~2.4 GHz range, it is recommended
that the circuit be completely shielded to prevent losses due to circuit
radiation at these frequencies.

Fig. 18- Typical circuit construction.

205

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 546

OOCTI3LJD

RF Power Transistors

Solid State
Division

2N6268 ·2N6269

6.5- and 2-W, 2.3- GHz" Emitter- Ballasted
Silicon N-P-N Overlay Transistors
For Use in Microwave Power Amplifiers
Fundamental-Frequency Oscillators, and Frequency Multipliers

Features.

RCA H F·28 package

•
•
•
•
•
•

Designed for 20· to 24·V equipment
Emitter·ballasting resistors
VSWR capability of 10:1 at 2.3 GHz
2·W output with 7 dB gain (min.) at 2.3 GHz (22V) . 2N6268
6.5·W output with 5 dB gain (min.) at 2.3 GHz ·2N6269
Stable common·base operation

RCA·2N6268 and 2N6269- are epitaxial silicon n·p·n planar
transistors featuring the overlay multiple·emitter-site con·
struction. They are designed especially for equipment using
20· to 24·V collector supplies in microwave communications,
S·band telemetry, microwave relay link, phased-array radar,
distance·measuring equipment, transponder, and collision·
avoidance systems.
The ceramic·metal stripline package of these devices features
low parasitic capacitances and inductances, which affords
.. stable operation in the common·base configuration.
Ideal as a driver for the 2N6269, type 2N6268 can also be
used in large-signal applications. The use of emitter-ballasting

• Ceramic·metal hermetic stripline package with low inductance and low ·parasitic capacitances
• For stripline, microstripline, and lumped'constant circuit
applications

resistors and the low·thermal·resistance package make the
2N6269 especi611y suitable for large·signal, CW, or pulsed
applications over the range of 0.5 GHz to 2.4 GHz in strip'
line, microstripline, and lumped-constant circuits.
"Formerly RCA Dev. Nos. TA8407 and TA7995A. respectively.

MAXIMUM RATINGS, Absolute-Maximum Values:
"COLLECTOR·TO·BASE VOLTAGE •..

VCBO

"COLLECTOR·TO·EMITTER VOLTAGE:
With external base·to·emitter resistance
(RBE)= 10n • . . . . . . . . . . . .

2N6268

2N6269

45

45

v
V

45

45

"EMITTER·TO·BASE VOLTAGE

3.5

3.5

V

"CONTINUOUS COLLECTOR CURRENT

0.350

1.5

A

6.25
0.05

21
0.168

wtc

"TRANSISTOR DISSIPATION:
At case temperature up to 75° C
At case temperature above 75° C

Derate linearly at

"TEMPERATURE RANGE:
Storage and operating, (Junction)
"CASE TEMPERATURE (during soldering)
For lOs max. • • • • . . . . . . . . . . . . . . . . . . . . • • . . .

W

-65 to +200

°c

230

°c

"In accordance with JEDEC registration data format JS-6 RDF-3IJS·9 RDF·7.

206

.;

.

"·73

2N6268, 2N6269

File No. 546
ELECTRICAL CHARACTERISTIcs. at Case Temperature (TcJ = 2tt'C unless otherwise specified.
STATIC

CHARACTE RISTI C

Coliector·Cutoff
Current

SYMBOL

IE

IB

2N6268

IC

MIN.

MAX.

VBE

40

0

-

2

0
0

-

1

ICES

30
35

Collector·to-Base
Breakdown Voltage

V(BR)CBO

0

5

45

-

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

0.1

0

3.5

Collector·to·Emitter
Breakdown Voltage
With external baseto·emitter resistance
(RBE)= 10n

V(BR)CER

10

45

Coliector·to·Emitter
Saturation Voltage
Thermal Resistance
(Junction·to·Flange)

2N6269

VCE

At TC = 55°C

.

LIMITS

TEST CONDITIONS
DC
DC
COLLECTOR
CURRENT
OR BASE
(rnA)
VOLTAGE (V)

10
20

VCE(sat)

100
100

ROJF

-

UNITS

MAX.

MIN.

-

2
rnA

2

45

-

V

-

3.5

-

V

-

45

-

V

-

-

V

6

°C/W

1

-

-

-

20

1

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Output Power, PIB = 0.4 W
=2W

PO B

Power Gain, POB = 2 W
=6.5W

GpB

FREQUENCY
(f) - GHz

Collector Efficiency, POB = 2 W
=6.5W

flC

2.3
2.3
2.3
2.3
2.3
2.3

Coliector·to·Base Capacitance
VCB=30V

Cobo

1 MHz

.

DC
COLLECTOR
SUPPLY
VOLTAGE
(VCC)-V
22
22
22
22
22
22

LIMITS
2N6268
MIN.
2

-

-

7

MAX.

MIN.

MAX.

-

-

.-

-

-

-

-

5.5

-

33

UNITS

2N6269

6.5

5

32

-

-

W

-

-

dB

-

%

13

pF

In ,",cordanc. with JEDEC regIstration data format JS-6 RDF·3/JS·g RDF·7.

TYPICAL APPLICATION INFORMA TlON
SEE FIG.

DC COLLECTOR
SUPPLY VOLTAGE
(Vccl- V

Microstripline: 2.3·GHz Amplifier
Microstripline: 2·GHz Amplifier

28
25

22
22

2
2

Microstripline: 1.3·GHz Amplifier

27

22

1

11

Microstripline: 2·GHz Amplifier

23

22

0.3

2.1

Microstripline: 1.6-1.8·GHz Tunable Oscillator

29

20

-

3

Lumped Constant: l·GHz Amplifier

22

22

0.15

3.2

CIRCUIT & FREQUENCY

INPUT POWER
(PIB)-W

OUTPUT POWER
(POB)-W
7
9

207

2N6268, 2N6269 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 546
PERFORMANCE DATA
LL

14

0.8

1.0

1.2

I

FREQUENCY 1f1-GHz

U

(Veel- 2 v

CASE TEMPERATURE ITel. 25"'<:
Reao.24Q12.3 GHzl
=1.0. IGHzl

12

1.8
2.0
1.4
1.6
FREQUENCY (fl-GHz

2.2

2A

2.6

92CS-19801

92CS-19800

Fig. 1- Typical output power..s. frequency for common·base
amplifier in test set·up of Fig. 14 for type 2N6268.

Fig. 2- Typical output power vs. frequency for common-base
amplifier in test set-up of Fig. 15 for type 2N6269.

COLLECTOR SUPPLY VOLTAGE IVccl:022 V

CASE TEMPERATURE 1Tc)"'25°C
FREQUENCY (f)~ 2.3 GHz

.0

Re~O.o.

10

COLLECTOR SUPPLY VOLTAGE
o

BO

~

70 ~

S
o

60 ~

8
50
40

I

o

0.1

0.2
0.3
INPUT POWER (PIS )-W

0.4

40
D.25

o.~

o.7~

ID

1.2~

1.!5

1.7~

2D

2.2~

INPUT POWER (PJst- w
92CS-19813

Fig. II-Typical I·GHz output power and col/ector effi·
ciency vs. input power in test set·up of Fig. 14 for
type 2N6268.

92CS-19BB2

Fig. 12- Typical I·GHz output power and collector effi·
ciency vs. input power in test set-up of Fig. 15 for
type 2N6269.

209

File No. 546

2N6268, 2N6269
PERFORMANCE DATA
90

14 COLLECTOR SUPPLY VOLTAGE 1VCC1=22V
CASE TEMPERATURE ITe} =2S D C
FREOUENCY I f I = 2 GHz
12 Re~O.24.n

80 ~
I

"

70 ~

g

60 ~
~
~

'"
50

~

40

8

'0

o

20

0.25

0.5

0.75

1.0
1.25
I.S
INPUT POWER IPIBI-W

1.75

2.0

2.25

Fig. 13-Tvpical 2·GHz output power and col/ector effi·
ciencv for type 2N6269 in the circuit of Fig. 25.

92CS-17665

Fig. 14-Block diagram of test set-up for measurement of
performance from 1- or 2-GHzcommon-baseamplifier for type 2N6268.

loaa

CASE TEMPERATURE (Te) = 100 "c

6
E

4

I

~HOT-SPOT TEMPERATURE

Ic(MAXl CONTINUOUS

3'

4

I

I

I

«

(TJ S 1=20Q"C

.

'"
~ 100
"
~

~

!:!

~

I

I
i5

8

2

I I
6

CASE TEMPERATURE
1Tc}=100"C

IdMAX.l CONTINUOUS

'"

""

-

\.

'~~~P~OZTURE

.4

\ 1 200'C_
0

NOTE - TJS IS DETERMINED BY
USE OF INFRAAED
SfANNING TiCHNI~UES

.2

I

0

8 10

6

8 100

CDLLECTOR-TO-BASE VOLTAGE {VCB)-V
92SS-4482R3

Fig. 16-Maximum operating area for forward-bias operation
of type 2N6268.

210

..
.6

g

NOTE:
TJS 15 DETERMINED BY
USE OF INFRARED
SCANNING TECHNlaUES

10

I

~

z

6

4

«
I

2

U

2

~

z

Fig. 15-Block diagram of test set-up for measurement of rf
performance from 1- or 2-GHz common-base amplifier for type 2N6269.

68 1 0 2 0 4 0
COLLECTOR-TO-BASE VOLTAGE

1Vce)-V
92CS -19370 RI

Fig. 17-Maximum operating area for forward-bias operation
of type 2N6269.

File No. 546

2N6268, 2N6269
DESIGN DATA
COLLECTOR SUPPLY VOLTAGE t Vee) ~ 22V
CASE TEMPERATURE tTcl-25°C
INPUT POWER'I.~W
15
SERIES INPUT IMPEDANCE"
RINt j XIN
COUEerQR LOAD IMPEDANCE=10
RCL + j XCL

COLLECTOR SUPPLY VOLTAGE 1VCC)-22V
CASE TEMPERATURE ITC)-2S0C
IN~UT POWER~SAT.

+20
+I
C;

I

Re(ZCLI

Re IZIN)

w

u

~
2l

='"
-5

-1"'(~cO

-5
POINT FOR ZIN

EA,"""E'J:ft

~
POINT FOR ZCL

-10
O.S

ReIZCL)
0

MEASUREMENT

O.B

1.0

SERIES INPUT INPEDANCE"

-10

RIN+ j X1N

COLLECTOR LOAO IMPEDENCE=RcLtiXCL
1.6
1.8
2.0

12
1.4
FREQUENCY Ifl-GHz

2.2

2.,

-15
O.S

1.2

0.8

Fig. 18-Typicallarge·signal series input impedance and largesignal collector load impedance vs. frequency for
type 2N6268.

1.4

1.6

2.2

1.8

2.'

FREQUENCY (fI-GHz

92CS-198L6

Fig. 19-Typicallarge-signal series input impedance and largesignal collector load impedance vs. frequency for
type 2N6269.

'a
1 30

CASE TEMPERATURE CTc) • 2~·C
FREQUENCY If) • I MHz

1
9 2~

~

i

20

10

COLLECTOR-TO-BASE VOLTAGE IVCB1-V

92C5-19818

I.

20

25

30

35

40

45

COLLECTOR-TO-BASE VOLTAGE (Yca)-Y
92CS~Ig:s)8

Fig. 20-Typical collector-to·base capacitance
to-base voltage for type 2N6268.

lIS.

collector-

SOLDERING INSTRUCTIONS
When the 2N6268 or 2N6269 are soldered into a micro·
stripline or lumped-costant circuit, the collector and emitter
terminals of the devices must be pretinned in the region
where soldering is to take place. The device should be held in
a high·thermal-resistance support for this tinning operation.
A 60/40 resin-core solder and a low-wattage (47 watts)
soldering iron are suggested for the pretinning operation. The
case temperature should not exceed 230 ·C for a maximum
of 10 seconds during tinning and subsequent soldering
operations.

Fig. 21-Typical collector-to-base capacitance vs. collectorto-base voltage' for type 2N6269.

TERMINAL CONNECTIONS
Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector

WARNING: The ceramic bodies of these devices contain
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

211

2N6268, 2N6269

File No..546
2N6268 APPLICATION DATA
R~A

2N6268

"'Vee" 28

.314-

-IIIB.B91
0.35

-nL

L3

h -=

(~J
1.275..:.j

+Vcc

1fs.981

h

0.725"

jIB.4IS-'

t:$j t$=J
0.30
(7.621

0.180
14.5721

92CS-198It

92CS-17641R1

Cl' C7:
C2' CS:
Ca_ C5:
C4 :
Ll' L4:
L2' L3:

C1 C3:
C2 :
L1 • L3:

1000 pF, ceramic,leadless
0.35-3.5 pf. air-dielectric, Johanson 4701·
1·10 pF. air-dielectric, Johanson 2957·
1000 pF, 'eedthrough, Allen·Bradley FA5C'
0.01 in. (0.254)- thick, 0.157 in. (3.98)- wide copper strip
shaped 8S shown in inset drawing
RF choke, O.l",H. Nytronics Deci.Ductor-

L2' L4:

0.35-3.5 pF, air-dielectric, Johanson 4701·
1000 pF, 'eedthrough, Allen·Bradley FASC'
Microstripline. 2 oz. copper-clad 1/32 in (0.8)- Teflonfiberglass
RF choke, 4 turns, No. 28 wire, 0.062 In. 11.57)* 10,
0.187 in. 14.75)' long

-Note: Dimension In parentheses are in millimeters and are derived
from the original inch dimensions shown.
·or equivalent

·Note: Dimensions in parentheses are In millimeters and are derived
from the original Inch dimensions shown.

·or equivalent

Fig. 23- Typical circuit for 2·GHz microstripline amplifier.

Fig.22-Typical lumped-element circuit for I·GHz power
amplifier.

CI)~
tVee
92CS-19878

L

0.085

(2.161

NOTE: LINE MACE ON
1/32 IN. TEFLONFIBERGLASS BOARD

r-x;-T

L:....J

1---l1 0 .55

(14.091

C1' C3:
C2:
C4:
L1:
RFC:

l-

Flltereon, Allen-Bradley SMFB·A1·
0.3·3.5 pF, Johanson 4700'
300 pF, ATC 100'
1.0 in. (25.4) * section miniature 50 cable
3 turns. No. 32 wire, 0.062 in (1.57)*10,0.187 in 14.75)* long

-Note: Dimensions In parentheses are In millimeters and ara derived
from the original Inch dimensions shown.
·or equivalent

Fig. 24- Typical 1.7·GHz oscillator circuit.

212

File No. 546

2N6268, 2N6269
2N6269 APPLICATION DATA

0.30

(7.62)

~

~

0.38

(9.65)

t
~

~
---r
1;.;.

~~

-.-.l
0.50

)(2

~1I2.70)

(3.d--l
:...J
0.12.5

(1.62)

NOTE I

(12.19)

C1• C4 • C5 , 0.3-3.5 pF. Johanson 4700·
C2 • C 3 : Filtereon, Allen-Bradley SMFB-A 1AFC: No, 32, wire. 0.4 in. (10.2)* long

R 1 , 0.24 n
Dielectric material: 1/32 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit board (e = 2.6), LinesXl and X2 are produced by
removing upper copper layer to dimensions shown.
-Note: Dimensions In parentheses are In millimeters and are derived

from the original inch dimensions shown.

·or equivalent

Fig. 25- Typical 2·GHz power amplifier circuit.

J

r-;--1
0.40
~Uo.16)

-1

0.80
(20.32)

-r
~

C1• C2 • C5 • C6 , 0.8-10 pF. Johanson 5202·
C3' C4' Filtercon, Allen-Bradlev SMFB-A 1·
RFC, No. 32 wire, 3 tumsO.062 in. (1.58)*10 x 0.187 in.
(4.76)' long
Rl' In
Dielectric material: 1/32 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit board (e ... 2.6). Lines X1 and X 2 are produced bV
removing upper copper layer to dimensions shown.
*Note: Dimensions· In parentheses are in millimeters and are derived
from the original inch dimensions shown.
·or equivalent

Fig. 26- Typical .1·GHz power amplifier circuit.

Vee

Cl' C2' C6'
C5' C7'
C3' C4 ,
Rl'

1-10 pF JFD Electronics, MVM010·
0.3-3.5 pF, JFD Electronics. MVMOO3·
1000 pF feedthrough, Allen·Bradlev FA5C·
0.75 n

Oielectric material: 1/32 in. (0.79 mm) thick Teflon-fiberglass
double-clad circuit board (E =2.6). LinesX1 and X2 are produced by
removing upper copper layer to dimensions shown.

·Nota: Dimensions in parentheses are In millimeters and arB derived
from the original Inch dimensions shown.
·or equivalent

Fig. 27- TypicaI1.3·GHz power amplifier circuit.

213

File No. 546

2N6268. 2N6269
2N6269 APPLICATION DATA
. C" C4:
C2' C3:
RFC:

R,:

0.3-3.5 pF, Johanson 4700·
Fllt.reon, Allen·Bradley SMFB-A ,.
No. 32 wire, 0.4 in. (to.2) * long
0.2411

Dielectric material: 1/32 in. 10.79 mm) thick Teflon-fiberglass
double..lad circUit board I. - 2.61. Lines X, and X2 are producad by
removing upper copper laver to dimensions shown.
0.3_
(U9)

---,
~
-.-l..x
~
2.

(4.83»

0.10
I(2.,54)~
0.4B

:....j

-Note:· Dimensions In parentheses are In millimeten and are derived
from the original inch dimensions shown.
·or equfvalent

.

NOTE I

112.191

Fig. 28-Typica/2.3-GHz amplifier circuit.

C" C3:
C2 :
C4 :
l,:
RFC:

Flltorcon, Alien-BredleySMFB-Al·
0.3-3.5 pF, Johanson 4700·
3Q!lpF,ATC-l00·
1.0 in (25.41· section miniature 50 n cable, or mlcrostrip
equivalent
3 turns, No. 32 wire, 0.062 in 11.57)*ID,0.IB7 in. 14.75)*
long

X2:

L

+vcc

0.19
(4.821

0.11
12.791

o-k-+-.l.
(9#-T-l,
0.6~

ii:ii

13-mil thick Teflon-Kapton doublo-clad circuit board
IGrade PE-1243 as supplied by Budd Polychem Division,
Newark, Delaware). or equivalent.
Line X2 is exponentiallv tapered
Oscillator is single screw tuneble 1.6 GHz to 1 B GHz
-Note: Dlmen,lonl In parentheses are In mlilimeten and are derived
from the original Inch dimensions shown •.
·or equivalent

Fig. 29-Typica/ t,7-GHz oscillator circuit.

214

File No. 546

2N6268. 2N6269
2N6268 & 2N6269 APPLICATION DATA

I--- ----l
0.25>

IFEMALE)

IFEMALE)

20n LINE CROSSECTION

/7.3,Q LINE CROSSECTION

92CS-J9B20

Dimensions in parentheses are in millimeters and are'derived from the
original inch dimensions shown.

Fig. 30- Typical circuit for 2· or 2.3·GHz stripline test jig for measurement of performance from 2· or 2.3-GHz common·base
amplifier for 2N6268.

2 HOLES
(TO CLEAR SCREWS
USED TO HOLD
DEVICE DOWN AT
MOUNTING FLANGE)

9~CS'19:S33

C1' C5 :
C2' C 3 :

DC-blocking capacitors
Feedthrough or filter capacitors

(a) Typical circuit·

Dimensions in parentheses are in millimeters and are derived from the
original inch dimensions shown.

(b) Circuit shield (Place over device and screw down to
circuit board).
NOTE: The circuit shield (b) can be made as a pan of a ridge in the
circuit board (a) instead of the slot shown, and the device can be
mounted upside down in a slot in this ridge for equivalent circuit
isolation. For operation in the 2-2.4 GHz range, it is recommended
that the circuit be completely shielded to prevent losses due to circuit
radiation at these frequencies.

Fig.31-Typical circuit construction using 2N6268 or
2N6269.

215

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 617

OOCD3LlD

RF Transistors

Solid State
Division

2N6389

UHF/MATV Low-Noise
Silicon N-P-N Transistor

~cl!

For High-Gain Small-Signal Applications in UHF TV
RF Amplifiers and UHF MATV Amplifiers

Jl\"

Features:

, ,I

,,\

!

•

I

JEDECTO-72

H-1299

Low noise figure:
NF = 3 dB (typ.) at 450 MHz, 1.5 mA
= 4 dB (typ.) at 890 MHz, 1.5 mA
= 6 dB (typ.) at 890 MHz, 10 mA
• High gain (tuned, unneutralized):
GpE = 15 dB (min.) at 890 MHz

RCA 2N6389- is an epitaxial silicon n-p-n planar transistor intended for low·power, small-signal applications where both
low noise and high gain are desirable. It utilizes a hermetically
sealed four·lead JEDEC TO-72 package. All of the elements
of the transistor are insulated from the case, which may be
grounded by means of the fourth lead.

•
•
•
•

High gain-bandwidth product
Large dynamic range
Low distortion
Low collector-base capacitance

-Formerly RCA No. 40989_

MAXIMUM RATINGS, Absolute-Maximum Values:
'COLLECTOR-TO-BASE VOLTAGE _________________ , ____________________
'COLLECTOR-TO-EMITTER VOLTAGE ______________________________ , ____
*EMITTER-TO-BASE VOLTAGE ________________________________________
'COLLECTOR CURRENT (Continuous) ____________________________ '________

_
_
_
_

'TRANSISTOR DISSIPATION:
At ambient temperatures up
to 2So C ____________________________________________________ _
At 2S
ambient
temperatures above
o C ______ .. _____________________________________________ _

'TEMPERATURE RANGE:
Storage and Operating
(Junction) _________________________ . ________________________ _

VCBO
VCEO
VEBO
IC
PT

20
12
2_S
40

V
V
V
rnA

200

mW

Derate linearly
at 1.14 mW/oC
-65 to +2000 C

'LEAD TEMPERATURE (During soldering):
At distancesL1/16 in_ (1_S9 mm) from
seating plane for 60 s max_ _ ______________________________________ _

300°C

*In accordance with JEDEC registration data format

J5-9 RDF-l_

216

9-74

File No. 617 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6389

ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TAJ = 2fiDC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAGE
Vde
V CB

I

VCE

CURRENT
mAde
IE

liB

I

LIMITS
IC

MIN.

I

UNITS

MAX.

STATIC

*

Collector Cutoff Current

I CBO

15

*

Emitter Cutoff Current

lEBO

(V EB )
1

*

Coliector·to·Base
Breakdown Voltage

V(BR)CBO

*

Collector·to·Emitter
Breakdown Voltage

V(BR)CEO

*

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

*

DC Forward Current

hFE

0
0
0

0.Q1
1

20

nA

1

J.I.A

20

-

V

3

12

-

V

0

2.5

-

V

3

25

250

-

880

-

-

41typ.l
61typ.l
31typ.l

dB
dB

0.001
0

-

-

Transfer Ratio

Thermal Resistance:
(Junction·to·Case)

ROJC

°C/W

DYNAMIC
Device Noise Figure:

f

= 890 MHz
=890 MHz
= 450 MHz

Small·Signal Common·Base
Power Gain If = 890 MHz)

*

Small·Signal, Short Circuit
Forward Current Transfer
Ratio If = 1 kHz)

*

Magnitude of Small·Signal
Short Cireu'it Forward
Current Transfer Ratio
If = 200 MHz)

*

Coliector·to·Base Time
Constant If

*

10
10
10

1.5
10
1.5

G pB

10

10

15

-

25

250

5

15

hfe

1

3

Ihfel

10

1.5

rb'CC

10

1.5

1

15

Ccb

10

0

0.4

0.55

ps

= 31.9 MHz)

Colleetor·to·Base Capacitance
If - I MHz)

*

NF

pF

In accordance with JEDEC registration data format JS·9 RDF·1.

217

2N6389

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 617

COlLECTOR-TO-BASE VOLTAGE IVea'·IO v
COLLECTOR CURRENT (Iel-I,!) mA
6 AMBIENT TEMPERATURE (T )-2!S°C

:>

.. 3

o
400

600

800

1000

92CS-21116

92C$-21115

Fig. 1 - Power dissipation vs. ambient temperature.

Fig. 2 - Typical common-base noise figure vs. frequency.

COLLECTOR-TO-EMITTER VOLTAGE 1VeEI-IOV
AMBIENT TEMPERATURE ITA)· 25°C
NOTE: 'T CALCULATED FROM MEASURED
VALUES OF S- PARAMETERS

o

15

10

20

COLLECTOR CURRENT Uel -mA

92CS-19735

Fig. 3 - Gain-bandwidth product vs. col/ector current.

2N638S

CI

L2

C2

LI

C7

L3

RFe

R3

RI

R4

92CS-24997

C1.C 7 : 3.3pF disc ceramic

C2: 2.7 pF disc ceramic
C3: 1 pF disc ceramic
C4 : 25 pF, :ATe-100 or equivalent

L 1.L2: 2 turns, No. 18 wire, 0.125 in. (3.175 mm) 10
RFC: 8 turns No. 28 wire, 0.062 in. (1.57 mmllD

R,:
R2 :
R3:
R4 :

270n
2.2 kn
4.7 k~
4.7 n

Fig. 4-89Q.MHz common-base test circuit for gain and noise figure.

218

1200

FREQUENCY If I-MHz

AMBIENT TEMPERATURE ITAJ-oC

File No. 6 1 7 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2N6389

c 1:
C2.C3:
C4.C 5 :
CS :

1.0-30pF
1.0--20 pF
0.0411F
1-10 pF

L,: 2 turns No. 18 wire, 3/16 in. (0.188 mml
10.0.10 in. 12.54 mmllong
L2 : 3 turns No.~18 wire, 3/16 in. (0.188 mm)
10.0.15 in. 13.81 mmllong
L 3.L4 : 0.22·j.IH rf choke
LS: 3 turns No. 18 wire. 3/16 in. (0.188 mm)

10.0.15 in. 13.81 mmllong
R1 : 20014 1/4W
92CS-21118

• V18BI adjusted for IC = 1.5 mA
Fig. 5-Circuir diagram of 45Q-MHz amp/Wer used for measurement of noise figure.

+15V
PRECISION
VARIA~LE ATTENUATOR

Fig. 6-BJock diagram of test setup for
measurement of gain.

Fig. 7-Block diagram of noise-figure

test set.

TERMINAL CONNECTIONS

Lead
Lead
Lead
Lead

1234-

Emitter
Base
Collector
Connected to case

219

File No. 626

oornoo

RF Power Transistors

Solid State
Division

2N6390

RCA2003

2.5- and 3-W, 2-GHz, Emitter-Ballasted
Silicon N-P-N Overlay Transistors
For Use in Microwave Power Amplifiers,
Fundamental-Frequency Oscillators, and Frequency Multipliers

Features:
RCA HF-46
(RCA HF·46 can also be supplied
without flange upon request.!
H·1796R1

•
•
•
•

2.5-W output with 7-dB gain (min.) at 2 GHz, 28 V (RCA2003)
3-W output with 8-dB gain (min.) at 2 GHz, 28 V (2N6390)
Load-VSWR capability of -: 1 at 2 GHz
Emitter·ballasting resistors

• Stable common-base operation

RCA2003 and 2N6390· are emitter·ballasted epitaxial silicon
n·p-n planar transistors that use overlay multiple-emitter-site
construction. They are designed especially for use in microwave communications, L· and S-band telemetry. microwave
relay links, phased-array radar, distance-measuring equipment,

• Ceramic-metal hermetic stripline package with low induc-

tance and low parasitic capacitances
• For stripline, microstripline, and lumped-constant circuits

transponders, and collision avoidance systems.

These transistors are especially suitable for large-signal cw or
pulsed applications in stripline, microstripline, and lumped-

The ceramic-metal stripline package of these devices has low

constant circuits.

parasitic capacitances and inductances, which afford stable
operation in the common-base configuration.

•

Formerly RCA Dev. Nos. TA8748 and TA8747. respectively.

MAXIMUM RATINGS, Absolute-Maximum Values:
*COLLECTOR-TO-BASE VOLTAGE . .
*COLLECTOR-TO-EMITTER VOLTAGE:

VCBO

2N6390
50

RCA2003
50

V

With external base-to-emitter resistance

(RBE) = Ion . . . . . . . . .
*EMITTER-TO-BASE VOLTAGE. . . .
-CONTINUOUS COLLECTOR CURRENT.
'TRANSISTOR DISSIPATION:
At case temperature up to 75°C
Derate linearly at
At case temperature above 750 C
'TEMPERATURE RANGE:
Storage and operating (Junction). . . . . . .
"LEAD TEMPERATURE (During soldering):
At distances;::: 0.02 in. (0.5 mm) from seating plane
for 10 s max. . . . . . . . . . . . . .

50
3.5

50
3.5

B.34
0.067

B.34
0.067

V
V
A
W
WloC

-65 to +200

°C

230

°C

* 2N6390 in accordance with JE.DEC registration data format JS·6 RDF-3/JS-9 RDF-7.

220

9·74

File No. 626 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA2003. 2N6390
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)

CHARACTERISTIC

VCE

ICES

= 55 0 C

Colleetor·to·Base Breakdown
Voltage

V(BR)CBO

Collector·to·Emitter
Breakdown Voltage:
With external base·to·

V(BR)CER

RCA2003

mA de

VCB

IE

28

0

IC

UNITS

2N6390

MIN.

MAX.

MIN.

MAX.

-

0.5

-

-

45

-

-

-

2

40

-

-

I
2

50

-

-

-

-

50

-

V

5

50

-

50

-

V

0

3.5

-

3_5

-

V

50

20

120

20

120

-

15

-

15

ICBO

With emitter connected to base

LIMITS

Current

Voltage
V de

SYMBOL

Collector Cutoff Current:
With emitter open

At TC

= 2!PC, unless otherwise specified:

TEST CONDITIONS

:STATIC

0
0

mA
2

emitter resistance
(RBE) = 10

n

* Emitter-to-Base Breakdown

1

V(BR)EBO

Voltage

Forward Current
Transfer Ratio

10

hFE

Thermal Resistance:
ROJC

(Junction-to-Case)

DYNAMIC

TEST CONDITIONS

CHARACTERISTIC

Output Power

*

LIMITS

FREQUENCY
GHz

POWER
W

VCC

f

PIB POB

POB

28
28

2
2

0.5
0.475

GPB

28
28

2
2

2.5
3

TIC

28
28

2
2

2.5
3

Cabo

VCB = 28

1 MHz

SYMBOL

VOLTAGE
V de

RCA2003

Common-Base

* Collector Efficiency
* Collector-to-Base
Output Capacitance

UNITS

2N6390

MIN.

MAX.

2.5

-

-

-

-

-

3

-

Large·Signal
Power Gain

°C/W

MIN. MAX.
W

7

-

-

-

-

-

B

-

30

-

-

30

-

%

-

5

-

5

pF

-

dB

-

* 2N6390 in accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7.
COLLECTOR SUPPLY VOLTAGE IVCC)-28 V

7 COLLECTOR SUPPLY VOLTAGE (VCC)-28Y
CASE TEMPERATURE ITe )·2S-C
6 FREQUENCY (f) .. 2 GHz

CASE TEMPERATURE· (Te). 25-C

!J

!J

~

.

0

~

.'"

!f
'"

INPUT POWER (PIS).O.75 W

!J

O·S

...

o·~S

~

~
::>

'c

I

60

50

I

E

,.

POB

4

..u

30 ~

~

~

~

'"

i

!;

2

0

0

.

40 -u

u

~

w

~

~

2

FREQUENCY {f)-GHl'

~

U

U

92CS-2t550

Fig.1 - Typical output power vs. frequency
for both types.

U

o

0.25

0.5

0.75

INPUT POWER 1PlSl-W

92CS-ZIS51

Fig.2 - TvPical output power and collector efficienqv
vs. input power at 2 GHz for both types.

221

RCA2003, 2N6390 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 626

7 INPUT POWER {PU).O.5 W
CASE TEMPERATURE (Te)-25-C
6 FREQUENCY (Il" 2 GHz

P09

I.

14

18

20

22

24

26

28

30

COLLECTOR SUP~lY VOLTAGE (Vcc)-V
92CS-21SS2

F;g.3 - Typical output power and collector efficiency
vs. supply voltage for both types.
92C5-21555

Fig.4 - Input and output impedances for both types.

RCA2003
OR
2N6390

RFC

C21

RFC

C3~

RI

VCC ·+28V

e1, C4: 0.35-3.5 pF, Johanson 4702 or equivalent
C2, C3: 470 pF feedthrough, Allen-Bradley FB28 or equivalent
L 1: Microstripline.0.031 in. (0.79 mm) Teflon-Fiberglas,

0.18 in. (0.45 mml wide, 0.350 in. (0.889 mml long,

e- 2.6

L2: Microstripline, 0.031 in. (0.79 mml Teflon-Fiberglas,
0.18 in. (0.45 mml wide, 0.66 in. (16.76 mml long,

e- 2.6
RFC: 3 turns No. 32 wire, 0.0625 in. (1.58 mm) 10,0.25 in.
(6.35 mml long
AI: 0.12n
Fig.5 - 2·GHz test circuit for both types.

TERMINAL CONNECTIONS
Terminal 1 - Emitter
Terminal. 2 & 4 - Ba.e
Terminal 3 - Collector

222

Fig.6 - Block diagram of test set-up for measurement of
performance from 1- or 2-GHz common-base
amplifier.

WARNING: Tha ceramic body of these devices contains
beryllium oxlda. Do not crush. grind, Dr abrade thasa
portions because the dust resulting from such action may
be hazardous if inhaled_ Disposal should ba by burial.

File No. 627

RF Power Transistors

OOCIBLJO
Solid State
Division

RCA2005

2N6391

5-W, 2-GHz, Emitter-Ballasted
Silicon N-P-N Overlay Transistors
For Use in Microwave Power Amplifiers,
Fundamental-Frequency OsCillators, and Frequency Multipliers

Features:
RCA HF-46
(RCA HF·46 can also be supplied

•

without flange upon requestJ

•

Load-VSWR capability of -:1 at 2 GHz

•

Emitter-ballasting resistors

II

Stable common-base operation

H-1796R1

5-W output with 7-dB gain (min.l at 2 GHz, 28 V for both types

RCA2005 and 2N6391· are emitter-ballasted epitaxial silicon
n-p-n planar transistors that use overlay multiple-emitter-site
construction. They are designed especially for use in microwave communications, L- and S-band telemetry, microwave

relay links, phased-array radar, distance-measuring equipment,
transponders, and collision avoidance systems.
The ceramic-metal stripline package of these devices has low

• Ceramic-metal hermetic stripline package with low inductance and low parasitic capacitances
• For stripline, microstripline, and lumped-constant circuits
These transistors are especially suitable for large-signal cw or

pulsed applications in stripline, microstripline, and lumpedconstant circuits.

parasitic capacitances and inductances, which afford stable

operation in the common-base configuration.

• Formerly RCA Dev. Nos. TAB750 and TA8749, respectively.

MAXIMUM RATINGS, Absolute-Maximum Values:
*COLLECTOR-TO-BASE VOLTAGE
*COLLECTOR-TO-EMITTER VOLTAGE:
With external base-ta-emitter resistance
(RBE) = 10 n . . . . . . . _ .
*EMITTER-TO-BASE VOLTAGE_ . . .
*CONTINUOUS COLLECTOR CURRENT.
*TRANSISTOR DISSIPATION:
At case temperature up to 75 0 C
At case temperature above 75°C
*TEMPERATURE RANGE:
Storage and operating (Junction).

.

.

RCA2005
VCBO

Derate Ii nearly at
.

.

.

.

'LEAD TEMPERATURE (During soldering):
At distances:::: 0_02 in. (0_5 mm) from seating plane
for 10 s max. . . . . . _ _ . . . . . .

2N6391

50

50

V

50
3.5
2.5

50
3.5
2_5

V
A

16.7
0.133

16.7
0.133

V

W
W/oC

-65 to +200

°c

230

°c

* 2N6391 in accordance with JEDEC registration data format JS·6 RDF·3/JS·9 RDF-7.

9-74

223

RCA2005, 2N6391

File No. 627

ELECTRICAL CHARACTERISTICS, at Case Temperature (TCi = 2SOC, unless otherwise specified:
STATIC

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Voltage
V de
VCE

Collector Cutoff Current:
With emitter open

*

ICBO

With emitter connected to base
At TC

=

Coliector·to·Base Breakdown
Voltage

mA de

VCB

IE

28

0

IC

MIN.

MAX.

-

MIN.

MAX.

0.5

-

-

-

-

3

-

3

50

-

V

mA

1
5

50

-

-

5

50

-

50

-

V

0

3.5

-

3.5

-

V

200

20

120

20

120

-

7.5

-

7.5

40
0
0

VIBR)CBO

UNITS

2N6391

RCA2005

45
ICES

550 C

LIMITS

Current

* Collector-to-Emitter

Breakdown Voltage:
With external base· to·

V(BR)CER

emitter resistance
(RBE)

*

= 10 n

Emitter·to·Base Breakdown
Voltage

1

V(BR)EBO

* Forward Current

hFE

Transfer Ratio

Thermal Resistance:
(Junction·to·Case)

10

ROJC

oCIW

DYNAMIC

TEST CONOITIONS
CHARACTERISTIC

Output Power

VOLTAGE
V de
VCC

FREQUENCY
GHz
f

POB

28

2

GpB

28

2

'lC

28

2

Cobo

VCB = 28

1 MHz

SYMBOL

LIMITS
POWER
W

RCA2005

2N6391

UNITS

MIN.

MAX.

5

-

5

-

W

5

7

-

7

-

dB

5

30

-

30

-

%

-

9

-

9

pF

PIB POB
1

MIN. MAX.

Large·Signal
Common-Base

Power Gain

* Collector Efficiency
• Collector· to· Base
Output Capacitance

* 2N6391

224

in accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7.

RCA2005, 2N6391

File No. 627

92CS-21565
Fig. 1 - Input and output impedances for both types.

225

RCA2005, 2N6391 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 627

I.

COLLECTOR SUPPLY VOLTAGE «Vee)· 28 V
~ASE

TEMPERATURE (Te). 25· C

12

..I

1 COLLECTOR SUPPLY VOLTAGEtvcC'·28V
CASE TEMPERATURECTC)·2S-C
FREQuENCY (I)-2GHz

.
...
I

10

u

~

50

ffi

~

U
ii:

40 ~

0:

g
o

30

cl

20 u

1.2

1.4

1.6

I.e

2

2.2

2.4

2.6

2.8

FREQUENCY (f I-GHz

o

0.5

I

'.5

INPUT POWER (Pml-W
92CS-21568

92C5-21567

Fig. 2 - Typical output powers VI. frequency for both types.

Fig. 3 - Typical output power and collector efficiency vs. input
power at 2 GHz for both types.

7 INPUT POWER (PI8)& I W
CASE TEMPERATURE (TC)a2i5-C
6 FREQUENCY (I). 2 GHz

..
I

u

!:

~

..

ffi

92CS-21569

u

;;:

."
~

50 ~
0:

e:

o

40 ~

2

"o

g
30 u

I.

16
18
20
22
24
26
28
COLLECTOR SUPPLY VOLTAGE (VCC)-V

30

Fig. 4 - Typical output power and collector efficiency VI. supply
voltage for both types.

C1, C2, C5. C6: 0.3-3.5 pF. Johanson 4700 or equivalent
C3, C4: Filtercon, Allen-Bradley SMFB-A 1 or equivalent
RFC: 3 turns No. 30 wire 0.0625~n.(1.58mmJ·dia .•
0.25 in. (6.35 mm) long
R1: 0.24 n, 1 W, wirewound
Dielectric Material: 0.031 in. (0.79 mm) thick Teflon-Fiberglas
double-clad circuit board (€ :: 2.6)
Note 1: Shunt stubs can be trimmed
To shorten, cut overall length
To lengthen, cut taper in stubs
Fig.5 - 2-GHz test circuit for both types.

TERMINAL CONNECTIONS

Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector

WARNI NG: The ceramic bodies of these devices contain
beryllium oxide. Do not crush. grind. or abrade these porFig.6 - Block diagram of test set-up for measurement of performance from ,- or 2·GHz common.base amplifier.

226

tions because the dust resulting from such action may be
hazardous if inhaled. Disposal should be by burial.

File No. 628

OOCIBLJO

RF Power Transistors

Solid State
Division

RCA2010

2N6392

2N6393

10-W, 2-GHz, Emitter-Ballasted
Silicon N-P-N Overlay Transistors
For Use in Microwave Power Amplifiers,
Fundamental·Frequency Oscillators, and Frequency Multipliers

Features:
RCA HF·46

• 10·W output with 7·dB gain (min.) at 2 GHz, 28 V (2N6393)

(RCA H F·46 can also be
supplied without flange
upon request.)
H·1796R1

• 10·W output with 5·dB gain (min.) at 2 GHz, 28 V (RCA2010, 2N6392)
• Load·VSWR capability of 10:1 at 2 GHz
• Emitter·ballasting resistors
• Stable common-base operation

RCA2010, 2N6392, and 2N6393- are emitter·ballasted epi·

• Ceramic·metal hermetic stripline package with low indue·
tance and low parasitic capacitances
• For stripline, microstripline, and lumped-constant circuits

taxial silicon n·p·n planar transistors that use overlay multiple·
emitter·site construction. They are designed especially for use
in microwave communications, L- and S-band telemetry,
microwave relay links, phased·array radar, distance·measuring
equipment, transponders, and collision avoidance systems.
The ceramic·metal stripline package of these devices has low
parasitic capacitances and inductances, which afford stable
operation in the common-base configuration.

These transistors are especially suitable for large'signal cwor
pulsed applications in stripline, microstripline. and lumpedconstant circuits.
-Formerly RCA Dev. Nos. TA8752, TA8751, and TA8746,
respectively.

MAXIMUM RATINGS, Absolute·Maximum Values:

"COLLECTOR·TO·BASE VOLTAGE .................. .

VCBO

RCA2010

2N6392

2N6393

50

50

45

V

"COLLECTOR·TO·EMITTER VOLTAGE:
With external base-to-emitter resistance
(RBE) = 10 n -- .. -- .. -- .... __ . -- ....

__ ..... __ . __

VCER

50

50

45

V

"EMITTER·TO·BASE VOLTAGE. . . . . . . . . . . . . . . . . . . . . .

VEBO

3.5

3.5

3.5

V

'CONTINUOUS COLLECTOR CURRENT..............

Ic

3.5

3.5

3.5

A

'TRANSISTOR DISSIPATION:

PT
21
0.167

21

21

0.167

0.167

At case temperature up to 750 C .................... .
At case temperature above 750 C. . . . . . . . .. Derate linearly at
'TEMPERATURE RANGE:
Storage and operating (Junction) ................... .
"LEAD TEMPERATURE (During soldering):
At distances> 0.02 in. (0.5 mm) from seating plane for lOs max.

W
W/oC

-65 to +200

oc

230

oc

-2N6392, 2N6393 in accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7.

9·74

227

RCA2010, 2N6392, 2N6393 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

File No. 628

ELECTRICAL CHARACTERISTICS,at Case Temperature (TC) = 2fiOC, unless otherwise specified:
STATIC
LIMITS

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Voltage

Current

-Vdc

mAdc

VCE

*

Collector Cutoff Current:
With emitter open
With emitter connected
to base

VCB IE

RCA201 0

45
40

ICES

-

0.5

-

-

-

-

-

-

-

3

-

-

-

-

5

50

5

50

-

50

-

45

-

V

0

3.5

-

3.5

-

3.5

-

V

120

20

120

20

120

6

-

6

-

6

-

35

Collector-to-Base Breakdown
Voltage

0

V(BR)CBO

UNITS

-

40

At TC = 550C

2N6393

""IN. MAX. MIN. MAX. MIN. MAX.

IC

28

ICBO

2N6392

3

-

3

-

rnA

50

-

45

-

V

3

• Collector-to-Emitter
Breakdown Voltage:
With external base-to-

V(BR)CER

emitter resistance
(RBE) = 10n
Emitter·to-Base Breakdown
Voltage

*

1

V(BR)EBO

Forward Current
Transfer Ratio

hFE

Thermal Resistance:
(Junction-to-Case)

ROJC

10

500' 20

-

oCIW

a Pulse test: pulse duration::: 80 IJS

DYNAMIC
LIMITS

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAGE
Vdc

Output Power

FREQUENCY POWER
W

GHz

VCC

f

POB

28
28

2
2

GpB

28

2

'IIC

28

2

Cabo

VCB= 28

1 MHz

RCA2010

2N6393

UNITS

PIB POB MIN. MAX. MIN. MAX. MIN. MAX.

-

-

-

10

-

10

10

-

-

W

10

5·

-

5

-

7

-

dB

10

33

-

33

-

35

-

%

-

10

-

11

-

11

pF

-

2
3

* Large-Signal
Common-Base

·2N6392

Power Gain

* Collector Efficiency
* Collector-to-Base
Output Capacitance

*2N6392, 2N6393 in accordance with JEDEC registration data format JS-6 RDf-3/JS-9 RDF-7.

228

File No. 628 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA2010. 2N6392. 2N6393

COLLECTOR SUPPLY VOLTAGE (Vee)- 28 v
CASE TEMPERATURE 1Tc)-25°C

14 COLLECTOR SUPPLY VOL.TAGE (VCCI-28V
'CASE TEMPERATURE ITC 1-25-C
12 FREQUENCY Cfl - 2 GHz

24

..

20

'"I

16

~'"
'"

~

I

~

.'"

~

0. ..

12

...=>

I

u

::
>-

.

JtvPur

~

.

10

~

o

2'

0

z

~

40 ~

~

18 ).3 ..

..
U

~

PO lte"" (p

eo=>

50

u

'"

4

30

~
o

20 u

1.2

1.4

1.6

1.8

2.2

2.4

2.6

2.8

FREQUENCY Cf)-GHr

INPUT POWER (PlS)-W

9ZCS'2I!:1!:1S

92C5-21557

Fig. 1 - Typical output power VI. frequency for RCA2010 and

Fig.2 - Typical output pawer and col/ectar efficiency

2N6392.

.

.
I

~

'0

-.8.

'.

input

COLLECTOR SUPPLY VOLTAGE (vccl-28 V
CASE TEMPERATURE (Tcl- 25-C

14 INPUT POWER (RIO)- 3 W
CASE TEMPERATURE (TC}-25&C
12 FREQUENCY (fl- 2 GHZ'

I

VS'.

power at 2 GHz for RCA2010 and 2N6392.

u

>-

u

ffi
~

50 ~

40

24

'"I

20

r.f

1&

-",

ffi

~

12

'"~~
..I

u5

30

"

16

18

20

22

24

26

28

0 .•

30

1.2

1.4

COLLECTOR SUPPLY VOLTAGE (Vcc)-Y

1.6
1.8
2
2.2
FREQUENCY (fl-GHz

92CS-'U559

Fig.3 - Typical output power and collector efficiency vs. supply
voltage for RCA2010 and 2N6392.

14 COLLECTOR SUPPLY VOLTAGE (VCC)a28V
CASE TEMPERATURE nC ~.25·C
12 FREQUENCY (t). 2 GHz

..- •
~

I

10

~

~=>

u

30

4

0

20

2.8

14 INPUT POWER (PUI- 2 W
CASE TEMPERATURE (TCI-25-C
12 FREQUENCY H) - 2 GHz

'"I

.~'"

$

...=>

u

40

2.6

Fig.4 - Typical output power vs. frequency for 2N6393.

..

50 z

"c

6

I

::
>u

.'"

'~..."

.

0"

2.4

92CS-2.I!:I60

'"~

~

10

~
~

~
o

4

20

o

14
INPUT

POWER (PIB1-W

16

18

20

22

24

26

28

30

COLLECTOR SUPPLY VOL.TAGE IvCC)-V
92(5-21561

Fig.5 - Typical output power and collector efficiency vs. input
power at 2 GHz for 2N6393.

Fig.6 - Typical output power and col/ector efficiency vs. supply

vol rage for 2N6393.

229

RCA2010, 2N6392, 2N6393 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 628

'ZCS-IIS.'

Fig.7 - Input and output impedances for all typtJ$.

9ZCS-ZIS84

Fig. 9- BloCk diagram of tnt ret-up for measurement of pertQrmancB
from ,- or 2·GH~ common-l1ase amplifier. .

Cl. C2. C5, CS: 0.3-3.5 pF, Johansen 4700, or equivalent
C3. C4: Fillereon. Allen-8radley SMFB-A 1. or equwalent

RFC: 3 turns No. 30 wire 0.0625 in. 11.58 mml dia.,
0.25 in. IS.35 mmllong
R 1: 0.24
1 W, wirewound

n.

Dielectric Material: 0.031 in. (0.79 mm) thick Teflon-Fiberglas

double-clad circuit board Ie = 2.61
Note 1: Shunt stubs can be trimmed

TERMINAL CONNECTIONS

Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector

To shorten, cut overaJilength
To lengthen, cut taper in stubs

Fig. 8 - 2-GHz test circuit lor sll types.

WARNING: The ceramic

_os

of _ _ contain

beryllium oxide. Do not crush, grind, or abrade Ih... _ .
dons because the dust resulting from such action may be

hazardous if inhaled. 0 ' - 1 should he by burial.

230

File N9. 301

DDJ]3LJI1

RF Power Transistors

Solid State
Division

'-,~~
~

.' 40082
40581

40080 40082 40581
40081 40446 40582

1

:
JEDEC TO-39

H·I381

~

.."';"''1

\
40080
40081

I

40582
40446 _
TO.a9 with flange

JEDEC TO·5

Silicon N-P-N
Planar Transistors
For Class C Operation in
27-MHz "C8" Circuits

• OSCILLATOR: 40080 (TO·5)
• DRIVER:
40081 (TO·5)
• OUTPUT:
40082, 40581 (TO-39)
40446,40582 (TO-39 + Flange)

/1·'3110

111375

RCA-40080, 40081, 40082, 40446, 40581, and 40582 are
triple-diffused, silicon planar n-p-n transistors, specifically designed for application in a 5-watt-output, 27·MHz citizens·
band transmitter. Type 40581 is a higher-power version of the

40082 and is intended to provide an output power of 3.5 W
in this application. Type 40582 is a higher·power version of
the 40446. These types have factory-attached diamond·
shaped mounting flanges.

MAXIMUM RATINGS, Absolute-Maximum Values:

COLLECTOR·TO·EMITTER VOLTAGE:
With V8E = -{I.5 volts ......................................
With base open .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
EMITTER·TO·BASE VOLTAGE................................
PEAK COLLECTOR CURRENT ............................... .
TRANSISTOR DISSIPATION:
At case temperatures up to 25°C ............................ .
At free·air temperatures up to 25°C .......................... .
At case temperatures above 25°C ............................. .
TEMPERATURE RANGE:
Storage & Operating (Junction) .............................. .
LEAD TEMPERATURE (During soldering):
At distances ;;'1/32 in. (0.8 mm) from insulating wafer for lOs max ...

40080

VCEV
VCEO
VEBO

40081

40082
40581

40446
40582

60

60

60

2.0
0.25

2.5
1.5

2.5
1.5

30
0.25

V
V
V
A

PT
10
2.0
5.0
0.5
_ S e e Fig. 2 _

W
W

_ - 6 5 to 2 0 0 _

°c

230_

°t

II

231

40080-40082,40046,40581,40582 _ _ _ _ _ _--,-_ _ _ _ _ _ _ _ __

File No. 301

cJ = 25"C

ELECTRICAL CHARACTERISTICS, Car.. Temperature (T

LIMITS

TEST CONDITIONS

DC

DC
CHARACTERISTIC

SYMBOL

VCB

VCE

DC

EMlnER
OR BASE
VOLTAGE
V

COLLECTOR
VOLTAGE
V

V BE

VCC

CURRENT
mA

IC

IE

10

40080

IB
0

-

30

~.5

Emitter-ta-Base
Voltage:

V eBO

Collector-Cutoff
Current

ICBO

Collector-to Base
Capacitance:

Cob

100pA
500pA

-

500pA
500pA

0
0
15
15
15

0
0
0

-

-

50

-

-

~.5

Vcev

-

2.0

10

30

-

10

-

-

60

-

2.5

-

-

10

V

V

V

pA

6

30
30

(Measured at

UNITS

MIN. MAX. MIN. MAX. MIN. MAX.

VCEO

Collector-ta-Emitter
Voltage:

40581
40582
40082
40446

40081

pF

6

20

1 MHz)

RF Power Output:
Oscillator
(I' 27 MHz)

POUT

12

32

100

POUT

12

85

-

-

-

-

-

mW

-

-

mW

Driver
(f =27 MHz.
PIN =75 mW)

-

400

3.0 (min.)
Output Amptifier
(f =27 MHz.
POUT
PIN = 350mW)

12

415

12

415

(40082.
404461
(40581.
405821

Junction-to-Case

Thermal

R8JC

Resistance:

350"

87.5

(max.1

(max.1

17.5 (max.)
(4044£.
405B21
·C/W

35 (max.)
(40082.
405811

aJunction-to-Amblent Thermal Aesistance. R6JA

TYPICAL C.B. TRANSMITTER PERFORMANCE (VCC = 13.8 V)
NO MODULATION
STAGE

RCA TVPE

RF POUT

W

100% MODULATION
IC
mA

RFPOUT

W

40080

15

-

15

-

Driver

40081

55

-

50

-

330

4.8 (typ.)

Output

a Adjusted for maximum legal power output.

232

IC
mA

Oscillator

40082, 40581
40446, or 40582

W

3.5 (min.)

330

3.58

FileNo. 301

40080-40082,40446,40581,40582

XTAL

.,
c"

'-------4~-o

Vee

' -_ _ _ _ _ _ _ _....._ _.....-{) VCC{lf.OOULI.TED)
92SS-J699RI

Cl :
C2 :
C3 :
C4 :
C5 :

47 pF
100pF
30pF
51 pF
75pF

L1: Primary 14 turns, Secondary 3 turns No. 22 wire % in. (6.35 mm)
eTC coil form with "green dot" core O.75-1.2IJH. Q= 100
L2: Primary 14 turns, Secondary 2·% turns No. 22 wire % in. (6.35 mm)
CTCcoil form with "green dot" core 0.15-1.2 J,tH. 0=100

Ce' CI2: 0.01 "F
C7 : 0.001 "F
O.002"F
Cg: 24pF
Cl0 : 90400 pF. ARCO
No. 429 or aquiv.
Cll : 220 pF

Ce:

L3:

11 turns No. 22 wire % in. (6.35 mm) eTC coil form with
"green dot" core 0.5-0.9 pH, a z:: 120

L4 :

7 turns No. 22 wire % in. (6.35 mm) eTC coil form with
"green dot" core 0.21-0.34 JlH. Q:::: 140

Rl :
R2 :
R3:
R4 :

5100
5.1000
510
1200
R5: 470
VCC: 11 to 15V
XTAL: 27 MHz

RFC,.
RFC2:

151lH,Miller No. 4624 or equiv.

Fig. 7- Typica/27-MHz amplifier chain.

~
,

~

~

~2SCREWS'4'40

NOT SUPPLIED WITh DEVICE

~

0

c;;II

~~~l~NSULATOR

~HEAT"NK
G

o~o

•

2. ME T AL WASHERS
2. LOCK WASHERS

G

7
@) }
@

2HEX.NUTS@

CASE TEMPERATURE (TC>-°C

495334-8
2. NYLON INSULATING 8USHINGS
I.D." 0.13013.301
SHOULDER DIA." 0.21815.541
SHOULDER TtlICKNESS"
0.05011.271 MAX.

NOT SUPPLIED WITH DEVICE
92CS-11452

9ZS5-lIi98

Fig. 2-Dissipation derating curve.

Fig. 3-Suggestod mounting hardware for JEDEC TO·5 with mounting
flange.

TERMINAL CONNECTIONS

Lead 1 - Emitter
Lead 2 . Base
Case, Lead 3 • Colleclar

233

File No. 68

RF Power Transistors
40280
40281
40282

IIlCIBOD

Solid State
Division

1,4,& 12-W, 175-MHz
Overlay Transistors

~
,,
I

Silicon N·P·N Devices for High·Power
VHF Amplifier Service

!

,!

Features

40281,40282

40280

JEDEC TO·50

JEDEC TO·39

• Suitable for low·voltage supplies (13.5 V)
• High output power at 175 MHz, unneutralized
class C amplifier
• High efficiency at 175 MHz
• Low input impedance

,H.t301

RCA·40280, 40281, and 40282 are epitaxial silicon n·p·n
planar transistors of the "overlay" emitter electrode can·
struction. They are intended especially for high - power
output, vhf class·C·ampl ifier service in low·voltage·supply
applications.
In the overlay structure, a number of individual emitter
sites are connected in parallel and used in conjuction with

a single base and collector region. When compared with other
structures, this arrangement provides a substantial increase in
emitter periphery for higher current or power, and a
corresponding decrease in emitter and collector areas for
lower input and output capacitances. The overlay structure
thus offers greater power output, gain, efficiency, and
frequency capability.

MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR·TO·BASE
VOLTAGE ............ VCBO
COLLECTOR·TO·EMITTER
VOLTAGE:

With base open •.••..•. VCEO
With VBE =-1.5V .... , . VCEV
EMITTER·TO·8ASE
VOLTAGE ........... VEBO
COLLECTOR CURRENT•. IC
TRANSISTOR DISSIPATION PT

40280

40281

40282

35

36

36

V

18
36

18

18
36

V
V

4

4

4

0.5

1

2

V
A

11.6

23.2

W

At case temperatures
up to 250 C ..........
7.0
At case temperatures
0
above 25 C...•..... Derate linearly to

36

a watts at 20QoC

TEMPERATURE RANGE:
Storage & Operating (Junction) .......... -65 to 200
LEAD TEMPERATURE (During soldering):
At distances 21/32 in. 10.8 mml from insulating
wafer (TO·SO) package or from seating
plane (TO-39 package) fOf lOs max.
• •.•. 230

DC
RF POWER INPUT (PIN) -

w
92LS-1528RI

°C

Fig. 1- Typical rf power output vs. rf power input at 175
MHz.

234

8-71

40280,40281,40282

File No. 68
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCi

= 25a C
.LIMITS

TEST CONDITIONS
CHARACTERISTICS

SYMBOL

DC
Collector
Volts

DC

Base

Current

Volts

(Milliamperes)

VCB VCE VBE
Collector Cutoff Current

Collector·to·Base Breakdown Voltage

V(BR)EBO

V(BR)CEV

Collector-to-Emitter Sustaining
Voltage

VCEO(sUS)

a
0
0.10
0.25
·1.5

a
13.5
13.5
13.5

Real Part of Common-Emitter

High·Frequency
Input Impedance (I = 175 MHz)

IB

hie(real)

type
40280

Gain-Bandwidth Product

POUT

13.5

IT

13.5
13.5
13.5

Collector·to·Ba.. Capacitance
(1= 1 MHz)

Cob

Collector·to·Case Capacitance

e.

Thermal Resistance, Junction·to·Case

ROJC

13.5

Type
40282

UNITS

Max

-

100

-

100

-

0.25
0.50
0
0

36

36

-

-

- 36

-

-

-

-

-

4

-

V

2000

36

-

36

-

36

-

V

200·

18

-

18

-

18

10 (typ.)

-

-

n

5 (typ.)

-

V

100
400
800

4c

-

12d

-

W

-

-

-

-

-

MHz

4

-

-

-

lb

-

RF Power Output:

As class C amplifier ·unneutralized
(I = 175 MHz) See Figs. 2 & 3

Type
40281

Min.

IC

0

V(BR)CBO

Emitter·to-Base Breakdown Voltage

IE

15

ICED

Collector·ta-Emitter Breakdown
Voltage

DC

Min. Max. Min.

4

- 7 (typ.)

'-

- -

0

-

-

100 550 (typ.)
400
- 4oo(typ.)
800
-

-

Max.
250

-

I'A
V

350 (typ.)

-

15

-

22

-

45

pF

-

- -

5

-

5

pF

-

15

-

7.5

oCIW

25

IIpulsed through an inductor (25 mH); duty factor"" 50%.

CFor PIN'" 1.O\N; minimum efficiency .. 70%.

bFor PIN = 0.125 w; minimum efficiency = 60%.

dFor PIN'" 4.0W; minimum efficiency'" 80%.

C3

Cl,C2,
C3, & C4: 7·100 pF
Cs: 8·60pF
C6: 1,000 pF
C7: 0.01 "F
L1: 3 turns No.16 wire,

3/16 in. (4.76 mml 10,

L3: 1 turn No.16 wire
1/4 in. (6.35 mm)ID,

3/8 in. 19.52 mm)long

4: 2 turns No.16 wire.
1/4 in. (6.35 mm) 10,
1/4 in. 16.35 mm) long
0: 40281,40282

5/16in. (1.93mmllong
L2: Ferrite Choke,
Z = 450 ohms

Fig.2-RF amplifier circuit for power·autput test at 175 MHz
for types 40281 and 40282.

Cl,C2,
C3, & C4: 3·30 pF
C5: 1,000 pF
C6: 0.01 pF
Ll: 2 turns No.16 wire.
3116 in. (4.76 mm)ID,
1/4 in. (6.35 mm) long
L2: Ferrite choke.

.

L3: 2 turns No.16 wire.
1/4 in. (6.35 mml 10,
1/4 in. 16.35 mm)long
L4: 4 turns No.16 wire.

3/8 in. (9.52 mm) 10,
3/8 in. 19.52 mm) long
0: 40280

Z = 450 ohms

Fig.3-RF amplifier circuit for pawer-output test at 175
MHz for tyoe 40280.

235

40280,40281,40282

File No; 68
POUT
12W

e'4

Vee

"ce

92l.M-2149

Vee

Capacitors

Cl: 3·35 pF
C2. C6. Cl0. C24: 8·60 pF
C3. C7. Cll: 0.Q1 pF
C4. C8.C12: 1500 p.F
C9. Cl0. C13. C14. Cn: 7·100 pF
C15: 1.5·20 pF
.C17. C18. C19: 0.2 pF
C20. C21. Cn: 1500 pF

Inductors

Transistors'

01: 40280
02: 40281
03-06: 40282

Turns

Ll

Wire

10

Size

(in.)

16

3/16

L,.

Length
Imml

(;n.1

(mm)

4.76

1/4

6.35

L2. Ls. La: ferrite choke, Z '" 450 n

L3. L6. Lll: 1 pH choke
L4. L7
L9
LIO

3
1·1/2
2

L12. L13,'L14 (adjust~ble core)

3·1/2

L15. L16. LI7
L18. L19. L20

2

16
16
16
16
18
18

3116
1/4
1/4
1/4
1/8

114

4.76
6.35
6.35
6.35
3.17
6.35

1/4
3/8
5/16

3/8
1/8
1/4

6.35
9.52
7.93
9.52
3.17
6.35

Note: Driver and final supply voltages. VCC

Fig.4- Typical 175·MHz amplifier.

TERMINAL CONNECTIONS
FOR All TYPES
Pin or lead No.1 - Emitter (402801
Emitter. Case (40281.402821
Pin or lead No.2 - Base
Pin or.lead No.3 - Collector (40281. 402821
Collector. Case (402801

236

vee

= 13.5 V.

File No. 70

RF Power Transistors
40290
40291
40292

OOcn5LJD

Solid State
Division

RCA-40290, 40291. and 40292 are
epitaxial planar transistors of the
silicon n-p-n type.
They employ an
"overlay" emi~ter electrode design and
are intended for low-voltage, high-power
output, amplitude modulated, VHF Class-C
amplifier service.
The voltage ratings for these transistors include RF voltage breakdown characteristics necessary to assure safe transis-

tor operation with high RF voltages on
the collector; a condition normally
encountered in amplitude-modulated
Class-C amplifiers.

For Low Supply Voltage,
High Power Output,
Amplitude Modulated,
VHF

Class~C

Amplifier

Service in Aircraft, .
Military, and Industrial
Communications Equipment

RF SERVICE
Maximum Ratings,

Absolute-Maximum Values:
110290 110291 110292

OJLLECTOR-TO- EMITTER
VOLTAGE:
With VBE = -1. 5 volts,
VCEX . . . . . . .
VCE.V(RF). • ••
EMITTER- TO- BASE
VOLTAGE, YEW. •
OJLLECTOR aJRRENT, I C.
TRANSISTOR
DISSIPATION, PT:
At case temperatures
up to 25° C. . . .
At case temperatures

above 25° C. •

50
90

vol t s

50
90

50
90

4
0.5

4
0.5

volts
4
1.25 amperes

7.0

11.6

23.2

vol ts

watts

at 200° C

from seating plane

11-73

JEDEC TO-39

JEDEC TO-60..

FEATURES

• High carrier output .power as 135 Mc Class-C amplifier with 12.5 volt collector supply voltage
40290 - 2 watts (min.) at PIN = 0.5 watt
40291 - 2 watts (min,) at PIN = 0.5 watt
40292 - 6 watts (min.) ot PIN = 2.0 watts

-65 to 200°C
-65 to 200°C

PIN OR LEAD TEMPERAWRE
(During soldering.):
At dis tances > 1/32
from insulat'lngwafer
(TO-60 package) or
(TO-39 package) for
10 seconds maximum .

40291,40292

Derate linearly to 0 watts

TEMPERATIJRE· RANGE:
Storage. . . . .
Operating (Junction) •

40290

230

°c

• 100% testing of all transistors performed to assure
excellent upward modulation characteristics
• High collector efficiency at 135 Mc
• All electrodes isolated from case (40291 and 40292)

237

40290,40291,40292 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ELECTRICAL CHARACTERISTICS. At Case Temperature (Td

=2!f'C
LIMITS

TEST CONDITIONS
CHARACTERISTIC

DC
SYMBOL Collector
Volts
VCB

Collector Cutoff Current

ICEO

Emitter·to-Base Breakdown Voltage

BV EBO

Collector·to·Emitter
Breakdown Voltage

BV CEX

= 135 Mc)

RF Carrier Power Output:
As Class·C Amplifier,
(At f = 135 Mc)

DC

Base

Current

(Milliamperes)

Volts
VBE

IE

IB

IC

0

fT

Type
40291

Min. Max. Min. Max.

-

100

~

100

Type
40292

UNITS

Min. Max.

-

I'1l

0

4.0

-

4.0

-

Volts

0

-

-

-

-

4.0

-

Volts

200a

50

-

50

-

50

-

Volts

12.5

100

12(Typ.)

12(Typ.)

-

-

ohms

12.5

400

-

-

-

-

6.5(Typ.)

ohms

2.0c

-

2.0c

-

6.0d

-

watts

-

-

Mc

12.5

100

500(Typ.)

12.5

400

-

-

500(Typ.)

-

250

0.25

12.5

POUT

Type
40290

0.1

-1.5

hie (real)

Gain·Bandwidth Product

DC

15

Real Part of Common-Emitter

Input Impedance (At f

VCE

File No. 70

-

-

-

17

-

17

-

30

pf

-

300(Typ.)

Mc

Coliector·to·Base Capacitance
(At! = 1 Mc)

Cob

Collector-to-Case Capacitance

Cs

-

-

-

6.0

-

6.0

pf

6 J •C

-

25

-

15

-

7.5

°CIW

Thermal Resistance
(Junction·to·Case)
apulsed through an inductor (25 mh);
bAt frequencies of 100 Mc or higher.

TERMINAL DIAGRAM
FOR TYPE 40290

12.5

0

RBE = 39 ohms; duty factor = 50%.

cFor PIN = 0.5 w; minimum efficiency = 70%.
d For PIN = 2.0 w;minimum efficiency = 70%.

TERMINAL DIAGRAM
FOR TYPES 40291 & 40292

BASE

(Bottom View)

238

(Bottom View)

File No. 70 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40290,40291,40292
RF AMPLIFIER CIRCUIT FOR POWER-OUTPUT TEST
(135-Mc Operation)

+Vcc
Q

= 40290, 40291

C l' C3 = 3-35 pf
c 2 ' C4 8-60 pf
1000 P f
C5
C6
0.02 J.Lf
3 turns No_16 wire,
L1
5/16" 10,5/16" long
L2

Ferri te choke,

Z = 450 ohms
3 turns NO_18 wire,
1/4" 10, 5/16" long
5 turns No.16 wi re,
7/16" 10, 5/8" 1 ong

Q =

C1 , C3
C2 , C4

C5
C6
Ll
L2

40292
3-35 pf
8-60 pf
1000 pf
0.02 J.Lf
3 turns NO.16 wire,
5/16" IO,5/16"10ng
wi re wound res i stor,
R = 2.4 ohms
1 turn NO.16 wi re,
5/16" 10, 1/8"10ng
4 turns No.16 wi re,
7/16" 10, 3/8" long

AMPLITUDE-MODULATED AMPLIFIER
135-Mc Operation, Carrier Power = 2 watts minimum, Bandwidth

=

5%

92C$-13093

C1 ,C 3 ,C 5
C 2 ,C 4 ,C 6

C7 ,C 9
C 8' C10

Ll
L 2' L5

3-35 Pf
8-60 pf
0.03 J.Lf
1000 pf
3 turns NO.16 wire,
1/4" 10, 1/4" long
Ferr i te choke,
Z = 450 ohms

L3
L4
L6
L7

RF choke, 1. 5 J.Lh
4 turns No.16 wire,
1/4" 10, 3/8' long
3 turns No.18 wire,
3/16" 10, 3/8" long
5 turns NO_16 wire.
3/8" 10. 112" long

Rl
R2
SR

220 ohms
180 ohms
IN 28 58

239

·40290,40291,40292 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

File No. 70

AMPLITUDE·MODULATED AMPLIFIER
13S-Me Operation, Carrier Power

=6

watts minimum, Bandwidth

=5%

92CS-13094

Cl ,C 3 ,C 5 ,C 7
C2,C~'C6,C8

C9~Cll,C13
C 10' C12 , Cl~
L l' L9
L2 , L5

3-35 pf
8-60 pf
0.03 I'f
1000 pf
:3 turns NO.16 wi re,
1/~" 10, 1/~" long
Ferrite choke,
Z = ~50 ohms

L3
L~,L7

L6
L8
L 10

RF choke, 1. 5 I'h
~ turns NO.16 wi re,
11 ~" 10, 3/8 " long
RF choke, 1. 0 I'h
wi re wound resistor,
R = 2.~ ohms
5 turns No.16 wi re,
3/8" 10, 1/2" long

R1 = 220 ohms
180 ohms
R2
SR = IN 28 58

AMPLITUDE·MODULATED AMPLIFI ER
135·Me Operation, Carrier Power

Cl ,C 3 ,C 5 ,C 9
C2,C~,C6,Cl0

C7 ,C 8
C11' C13 , C15
Cl2 , C g , C16
Ll
L 2' L5
L3

240

3-35 pf
8-60 pf
1. 5-20 pf
0.03 I'f
1000 pf
3 tu rns NO.16 wi re,
1/~· 10, 1/~" long
Ferri teO choke,
Z = U50 ohms
RF choke, 1. 5 I'h

=10 watts

minimum, Bandwidth

=

5%

92CS-13095

L~

L6' L7
L8 ,L 9
L 10
L11

~

turns No,16 wire,
11 ~" 10, 3/8" long
RF choke, 1.0 I'h
3 turns No.16 wi re,
l/u" 10, 3/8" long
1 turn No.16 wi re,
5/16" 10,1/8" long
ij turns NO.16 wire,
3/8 " 10, 1/2" long

Rl
R2
SR

33 ohms
36 ohms
lN2858

File

No. 74

RF Power Transistors
40340
40341

OO(]5LJ[]
Solid State
Division

High-Power 50-MHz
Emitter- Ballasted
Silicon N-P-N Overlay Transistors
For 13.5-V and 24-V Applications in Mobile
Communications Equipment
Features
JEDEC TO-GO

Emitter ballasting resistors
13.5 V-25 W min. power output. 7 dB min. gain (40340)
II 24 V-30 W min. power output. 10 dB min. gain (40341)
II Emitter connected to case
" Infinite load mismatch tested at 50 MHz
II

"

RCA-40340 and 40341 are epitaxial silicon n-p-n planar
transistors of the "overlay" emitter electrode construction.
They are intended especially for high-power-output,classC amplifier service at frequencies up to 100 MHz_
In the overlay structure, a number of individual emitter sites
are connected in parallel and used in conjunction with a

single base and collector region. When compared with other
structures, this arrangement provides a substantial increase in
emitter periphery for higher current or power, and a
corresponding decrease in emitter and collector areas for
lower input and output capacitances. The overlay structure
thus offers greater power output, gain, efficiency, and
frequency capability.

MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO·EMITTER VOLTAGE:
With base open ........... __ .......... _............... ____ . _
With base-emitter junction reverse-biased (VBE) = -1.5 volts ... _...... .

40340

40341

25

35

v

60
60

70
70

V

COLLECTOR-TO-BASE VOLTAGE. _. __ . _................... - - - - _.

VCEO
VCEV
VCBO

EMITTER-TO-BASE VOLTAGE ... _.. _. _.......... _........ __ .. __ .

VEBO

4.0

4.0

V

10

10

A

CONTINUOUS COLLECTOR CURRENT .. __ . ______ ....... _. _..... .

IC

3.3

3.3

A

TRANSISTOR DISSIPATION ........... _. _ . _. _.... _. ______ ..... .
At case temperatures up to 250 C ___ ....................... _. _.. .

PT

TEMPERATUR E (Operating iunction)

TJ

PEAK COLLECTOR CURRENT __ . _........................ ___ .. _

8-71

.... _. _..... _.......... __ ... .

V

70

70

W

200

200

°c

241

40340,40341

File No. 74

ELECTRICAL CHARACTERIST)CS, At Case Temperature (TC)

= 25°C

STATIC
TEST CONDITIONS

CHARACTERISTIC

DC
Collector
Voltage
(V)

SYMBOL

V CB
Collector-Cutoff Current:
With base open

With emitter open
Collector·to·Em itter
Breakdown Voltage:
With base open

V CE

DC
Base
Voltage
(V)
V BE

LIMITS

DC
Current
(rnA)
IE

IC

30
15

I CEO

V(BR)CEO

40341

UNITS

Min.

Max.

Min.

Max.

-

1.0

-

1.0

10

-

10
-

35

-

-

50
40

leBO

40340

-

-

200·

25

-

200·

60

-

70

-

4

-

4

-

rnA

V

With base-emitter junction

reverse biased, and external
base-to-emitter resistance
(R BE )= 20D

V(BR)CEV

Emitter·to·Base Breakdown
Voltage

V(BR)EBO

Ther,mal Resistance:
(Junction·to·Case)

ReJC

-1.5

10

2.5

2.5

V

°CIW

apulsed through a 25-mH inductor; duty factor = 50%.

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Power Output

POE

Power Gain

GpE

DC Collector
Supply
(VCC)-V

Frequency
(f)· MHz

5
3

50
50

25
-

13.5
24

5
3

50
50

13.5
+ 24

5
3

50
50

5
3

50
50

...

13.5
+ 24

...
·c

.;.

Collector Efficiency

1)C

Load Mismatch

LM

Collector· to· Base
Capacitance

Cobo

...
...
:\:

13.5
24

VCS = 30
VCS = 15

In circuit shown in Fig.1.
In circuit shown in Fig.2.

TERMINAL CONNECTIONS
Pin No.1 - Emitter
Pin No.2 - Base
Pin No.3 - Collector
Case, Mounting Stud - Emitter

242

LIMITS

Input
Power
(PIE)-W

1
1

40341

40340
Min.

Max. Min.

-

UNITS

Max.

-

30

-

7

-

-

-

-

-

60

-

10

60

W
dB

%

GO/NO GO

-

120

-

85
-

pF

File No. 74

40340,40341
L4

C6
-

13.5\1

+

92LS-131.5R2

24V

Cl:
C2:
C3:
C4:
C5:
C6:

14·150pF
90-400 pF
1000 pF

L,: 1 turn, No.16 wire, 5116 in. (7.93 mm) I D..
1/8 in. (3.17 mm) long
L2: Ferrite Choke, Z '" 450 n
L3: 10 turns, No.20 enamel wire, close wound,
1/4 in. (6.35 mm) 10
L4: 3 turns, No.10 wire, 3/4 in. (19.05 mm) 10,
3/4 in. (19.05 mml long

0.02~F

32·250 pF
32·250 pF

Fig.I-RF amplifier circuit for 40340 power·output test
(50-MHz operation).
COLLECTOR SUPPLY VOLTAGE VCC"13.5 V,I ~50 MHI

Cl:
C2:
C3.
C4:
C6:
C7:
C8:

14·150 pF
110·580 pF
C5: 1000 pF
0.0018 ~F
0.2 ~F
140·680 pF
32·250 pF

COLLECTOR SUPPLY VOLTAGE \lCC~24V.f~50 MHz
CASE TEMPERATURE ITC1~25·C
., ... '11'

r

30

4S

~
~

~
0

2S

{

20

...=>

3S

..

30

§

IS

·rr

w

~

~

~

.....,.

40

~

l!i

.

!:+-

iF;
+.4-.•.

~

~

~

1/4 in. 16.35 mm) long
L2: Ferrite Choke, Z :::; 450 n
L3: 10 turns, No.20 enamel wire, close wound,
1/4 in. (6.35 mm) ID
L4: 3 turns, No.l0 wire, 3/4 in. (19.05 mmllD,
3/4 in. (19.05 mmllong
R 1: 0.33 ohms

Fig.2-RF amplifier circuit for 40341 power·output test
(50-MHz operation).

CASE TEMPERATURE (TC 1a 25°C

I

9ZLS-1316R2

L,: 2 turns, Ne.16 wire, 1/4 in. (6.35 mmllD,

~ 2S

10

Ii

~

20

t'

hi

+.

rt

IS

2

3

4

5

o

6

RF POWER INPUT IP1N)-W

RF POWER INPUT (PIN I-w
92LS-1491RI

Fig.3- Typical performance of type 40340 in the common·
emitter amplifier shown in Fig. 1.
6 CASE TEMPERATURE tTCI;IOO.C .
4

Ie MAX

i

2

'0

TJS"200·C
I
8

INFRARED SCANNING TECHNIQUE

'''\
1---- '\.

6

0

~

I

NOTE:TJS IS DETERMINED BY

HOT-SPOT TEMPERATURE/

!:j

i.

'1
fl}

92lS-1493RI

Fig.4- Typical performance of type 40341 in the common·
emitter amplifier shown in Fig.2.

4

~

2

VCEO MAX.
0.1
2

6

T--

8

10
COLLECTOR-lO-BASE VOLTAGE (Veal-V

100
92CS-19064

CASE TEMPERATURE (TC) _

oc
9ZlS-18S2R2

Fig.5-Safe area for dc operation.

Fig.6-Dissipation derating curve.

243

File No. 356

OOCIBLJD

RF Power Transistors

Solid.State

Division

40608
RCA-40608 is an epitaxial silicon n-p-n planar transistor. It is especially designed for operation as a Class A,
~ide-band power amplifier in VHF circuits.
The features of high gain-bandwidth product and low
cross-modulation make the 40608 especially suited for
use in CATV and MATV systems.

·Formerly RCA Dev. Type No. TA2761

SILICON N-P-N "overlay"
TRANSISTOR
For Class A Wide~Band­
CATV and MATV

~

'I'j I

Applicatiations

H-I381

Features:
.-High Gain-Bandwidth Product
• Low Cross-Modul ation

MAXIMUM RATINGS, Absolute-Maximum Values:

COLLECTOR-TO-BASE VOLTAGE •• VCBO

40

V

COLLECTOR-TO-EMITTER
VOLTAGE:
With external base-UHlmitter
resistance, ,~.

100

t,
~

z....

(,' '", --

j;

I~

COLLECTOR-TO-EMITTER

VOLTS (Va) • 20
AMBIENT TEMPERATURE

92LS-I238R2

Fif/. 5 • Rever.e Transl.r AJmittance

40608

File No. 356
TYPICAL ADM!TTANCE CHARACTERISTICS
(Common.Emitter Circuit)
COLlECTOR-TO-EMITTER
VOLTS (VCE)- 20

-~
!:l",
z

AM~f~~: 2~~~PERATURE

E

"I
0-

.".

5'"
ZU
OZ
ur!

~:1'

~~

i§

COLLECTOR-TO-EMITTER
VOLTS (VCEI '" 20
AMBIENT TEMPERATURE

J

(TAl =25°C

- - , ..1~_

\..\~

/

f---- -

/

-

201--- -

IE ·25

I--

~

~tJ

50_

--------

.0

.

".

~
~~\\..
E.llS11~
30

~:.
~~

".

"

g§

';;-3

25l"

r

T ,./....,.~:'~~~5~1.'C..

40

"'~
or",

::0

I

50
10

i

---

.............

25

~

75

8
100
FREQUENCY -MHz

100
FREQUENCY -

MHz

92LS-1237R2

92LS-1236R2

Fig. 7· Output Aclmittance

Fig. 6 . Input Aclmittance

1000
~

4

CASE TEMPERATURE (T c)" 100 ·c

Ie MAX.

I

~

10
• 10
COLLECTOR-lO-EMITTER VOLTAGE (VeE) -

v

92CS-22857

Fig. 8 . Safe Area for DC Operation

TERMINAL DIAGRAM

Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector. Case

247

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 655

OOcrBLJD

RF Power Transistors

Solid State
Division

40637A

Silicon N-P-N
Epitaxial Planar Transistor

"'i
"
l

I

For Frequency-Multiplier Service in
Mobile, Marine, and Sonobuoy VHF Transmitters

TO-IS

Features:
H-,311

• High transistor dissipation rating (PT) =2 W max.
• Low output capacitance (Cob) = 4 pF max.
• Hermetically sealed JEDEC TQ-18 package

RCA-40637A is a silicon n-p-n epitaxial planar transistor
intended for frequency multiplier service to 175 MHz. The
40637A is particularly suitable for low-level frequencymultiplier stages in vhf transmitters.

A multiplier chain of three RCA-40637A's can deliver 100 mW
at 156 MHz, from a 5-mW. 13-MHz input with a 12-V supply.
The RCA-40637A utilizes a JEDEC TO-18 hermetic package.

MAXIMUM RATINGS, Absolute-Maximum Values:
,COLLECTOR-TO-EMITIER VOLTAGE:
With base-emitter junction short-circuited .......................... __ ..
EMITIER-TO·BASE VOLTAGE ....................... _.............. ..
CONTINUOUS COLLECTOR CURRENT ................................ .
TRANSISTOR DISSIPATION:
At case temperature up to 250 C . _... _................................ .
At case temperature above 250 C ............ _........ __ .... _... '...... _
At ambient temperature up to 250 C ....-.............................. .
At ambient temperature above 250 C ... __ ... : .......... _...... _.... _.. .
TEMPERATURE RANGE:
Storage and Operating (Junction) .... _ .............................. _..
LEAD TEMPERATURE (During Soldering):
At distances;;;' 1/16 in. (1.58 mm) from seating plane for 105 max. . ........ .

248

36
3.5
0_2

V
V
A

2
See Fig.3
0.75
See Fig.3

W
W

-65 to 200

°C

265

°c

8-73

File No. 655

__________________________________________________ 40037A

ELECTRICAL CHARACTERISTICS,at Ambient Temperature (TAJ = 2SOC
STATIC
TEST CONDITIONS
CHARACTERISTIC

Voltage
Vde

SYMBOL

Collector Cutoff Current:
With base·emitter junction short-eircuited

VIBRICES

Emitter-to-Base Breakdown Voltage

V(BR)EBO

Thermal Resistance:
Junction-to-case
Junction-to-ambient

ROJC
ROJA

LIMITS

UNITS

VCE

VBE

IE

IC

MIN.

MAX.

12

0

-

-

-

0.5

mA

-

0

-

5

36

-0.1

0

3.5

-

V

-

-

-

-

-

-

ICES

Collector-to-Emitter Breakdown Voltage:
With base-emitter junction short-eircuited

Current
mAde

-

B7.5
233

V

°C/W

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAGE
Vdc

f

VCC
Output Power as a
Frequency Doubler (See Fig. 1)

POWER
mW

LIMITS

UNITS

PIE

POE

MIN.

37

-

100

-

mW

MAX.

POE

12

7B(fIN)
156(fOUT)

71

12

7B(fIN)
156(fOUT)

-

100

lB

-

%

Cob

12
(VCB)

0.1 to 1

-

-

-

4

pF

Efficiency as a
Frequency Doubler (See Fig. 1)
Collector-to-Base Capacitance

FREQ.
MHz

L 1• L 2 : 4-}s: turns, No.22 enameled wire, close-wound
L 3_ L 4 : 4-% turns, No.20 bare wire, 0.25 in. (6.35 mm) long
All coils wound on slug-tuned form, 0.234 in. 15.95 mm) 0.0.,
with 0.5 i.n. 112.7 mm) x 0.5 in. 112.7 mm) x 1 in. (25 mm) shield

cans Carbonyl'" S.F. 10-32 threaded slug, or equivalent
RFC: 4 turns, No.3D enameled wire on ferrite bead, Ferroxcube t
No.56-590-65/48, or equivalent

All capacitor values are in picofarads unless otherwise specified
All resistor values are in ohms and rated at % watt unless otherwise
specified
*Arnold Magnetics Corp., Los Angeles, CA. 90016
tFerroxcube Corp. of America, Saugerties, N. Y. 12477

Fig. 1 - Typical doubler (18-156 MHz) circuit.

249

40637A _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 655

92CM-153B6

L 1• L 2 : 10-% turns, No.22 enameled wire, close-wound
L 3 • L 4 : 4-% turns, No.22 enameled wire, close-wound
L 5• La: 1-% turns, No.20 bare wire 0.25 in. (6.35 mm) long
All coils wound on slug-tuned farot. 0.234 in. (5.95 mm) 0.0.,
with 0.5 in. 112.7 mm) x 0.5 in. 112.7 mm) x 1 in. 125 mm)

shield cans"'Carbonyl* S.F. 10·32 threaded slug, or equivalent
~1' 02' 03: RCA40637 A
TRW/UTC Transfonner Co. N.Y •• N.Y. 10013

RFC: 4-turns No.30 enameled wire on ferrite bead Ferroxcube t

No.56-590-65/48. or equivalent
All capacitor values are in picofarads unless otherwise specified
All resistor values are in ohms and rated at % watt unless otherwise
specified
*Arnold Magnetics Corp., Los Angeles, CA. 90016
tFerroxcube Corp. of America, Saugerties, N. Y. 12477

Fig.2 - Typical frequency-multiplier chain. fIN = 13 MHz.
fOUT= 156 MHz.

92CS-22351

Fig.3 - Dissipation derating curves.

TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Case. Lead 3 - Collector

250

File No.

497

RF Power Transistors
40836
40837

D\l(]3LJD
Solid State
Division

High-Frequency Overlay
Power Transistors
For Oscillators And Amplifiers In UHF/Microwave Equipment
Features
• 0.5 W (min.1 oscillator output at 2.0 GHz (408361
• 1.25 W (min. I oscillator output at 2.0 GHz (408371
• Ceramic·metal hermetic coaxial package with low
inductances and low parasitic capacitanCes

JEDEC T0-215AA

• Emitter connected to flange (for increased
internal feedback I for higher efficiency at S·bancl
frequencies in Colpitts oscillator circuiU
• For coaxial. stripline. and lumped·constant circuiU

RCA40836 and 40837* are epitaxial silicon· n'p·n planar
transistors employing the "overlay" emitter-electrode
construction. These devices feature a low·loss. ceramic·metal.
coaxial package and are intended primarily for power
oscillator applications in the L· and S·band frequency ranges.
If the safe-area-of-operation conditions are not exceeded.
they may be used in class A amplifiers.

Applications
• L· and S-band power oscillators
• Common-emitter Class A amplifier
TERMINAL CONNECTIONS
Terminal No.1 - Base·
Terminal No.2 - Emitter
Terminal No.3 - Collector

-Formerly RCA·Oev. types TA7403 and TA7679, respectively.

MAXIMUM RATINGS. Absolute·Maximum Values:

40836
50

COLLECTOR·TO·BASE VOLTAGE ...•....................... VCBO
COLLECTOR-TO-EMITTER VOLTAGE:
With external base-to-emitter resistance (RBEI = Ion ............ VCER

40837
50

V
V

50

50

EMITTER-TO-8ASE VOLTAGE .............................. V EBO

3.5

3.5

V

DC COLLECTOR CURRENT (CONTINUOUSI ...•............... IC

0.2

0.275

A

4.15
See Fig. 6

W

-65 to + 2 0 0 _

°c

TRANSISTOR DISSIPATION: ........... '.' _.•....••....•.... PT
At case temperatures up to 750 C ..........................•.
At ca.. temperatures above 750 C ....................... _... .
For point of measurement of temperature
(on collector terminall. see dimensional outline.

2.5
See Fig. 5

TEMPERATURE RANGE:
Storage and Operating (Junction I ........................... .

11-73

-

251

40836,40837

File No. 497

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)

= 2!f1C

Static

TEST CONDITIONS
CHA!lACTERISTIC

SYMBOL

V CE
Collector-Cutoff Current

ICES

Collector-to-Base
Breakdown Voltage

V(BRICBO

Collector-to-Emitter
Sustaining Voltage:
With external base-to-emitter
resistance (R BE ) = Ion

VCER(susl

Emitter-to-Base
Breakdown Voltage

V(BRIEBO

Collector-to-Emitter
Saturation Voltage

VCE(sat)

Thermal Resistance:
(Junction-to-CollectorTerminal)

ROJCT

LIMITS

DC
CURRENT
(mAl

DC
COLLECTOR
VOLTAGE(VI
IE

IB

45

40836
IC

0
0

MAX. MIN.
1

UNITS

MAX.

-

2

rnA

-

-

V

-

-

50

-

5

50

-

50

-

V

0

3.5

-

3.5

-

V

-

V

30

°CIW

0.1
1

50

0.1
10
20

MIN.

-

0

40837

100
200

-

-

1

-

-

-

-

50

-

_1

Dynamic

CHARACTERISTIC

SYMBOL

Common-Collector Oscillator
Output Power

POB

Oscillator Circuit Efficiency
(See Fig. 11)

1/ 0

Collector·to-Base Capacitance

Cobo

LIMITS
SUPPLY
POWER
UNITS
40837
OUTPUT VOLTAGE FREQUENCY
40836
GHz
(POBI-W (VCCI- V
MIN_ TYP. MIN. TYP.

0.5
1.25

21
28

2
2

0.5

21
28

2
2

20

30(V CB )

lMHz

SUP.PLY VOLTAGE (Vee)" _2aY
CASE TEMPERATURE(Tc)= Z50C

~ 2.5

1:
e.

~

IS

I

~

~O.75

.
.
~
~

~~

~ 0.5

1.35

-

-

3.0(Max.1

SUPPLY VOLTAGE-·2IV

~

-

-

CASE TEMPERATURE (Tc)" 2SoC

it 1.25

1.25

0.65

-

-

-

20

-

3.0(Max.)

W

%
pF

2

1.S

,

~

0.'

0.25

"

1.5

,..

2
2.5
FREQUENCY (1) -GHr:

Fig. 1- Typical power output vs. freguency for grounded
collector power oscillator for 40836.

252

2.'

FREQUENCY If) - GHI
9255-3828

92$H481

Fig.2- Typical power output vs. frequency for grounded
collector power oscillator for 40837.

File No. 497

40836,40837

.

1000 CASE TEMPERATURE ITel" ICO°C

.

E

4

I

~
ffi

2

Ie

(~AXl CON~MJou1

~

8

4~-I-C-IM~A-X-I-OO-N-TiLNU-0-US~~+-----~--~--~-+~

227:I-..:l:~';;;':'':';;'':';;'::':=--I-+-,,~
HOT-SPOT
/TEMPERATURE
(TJS)" 20DOC

l5

160t---

~

---

-----_'-_~

r-

(TJS):20Q·C

I

a roo8t===t===l:=:\:::=t=:\:::~=t===I==t==t~

~ :~==-J____ ~-L~:~__~__~__~-+~

~ •

~

CASE TEMPERATURE (Tel" IOO·C

- - ~~~[~ITURE

§ 100
:;:

.

1000

.i

-L__

4

NOTE:

~~EIS DETERMINED BY

8

TJS IS DETERMINED BY USE OF

INFRARED SCANNING TECHNIQUES

USE OF

I

102~I::'NF:':R=A::;RED=-':SC=AN::'N;:'IN:':G::'T::;:EC=H::'NII;::i:;:'SII-I---+----+--I-~

2

10

224

68'0

6

68'00

COLLEClOR-lO- EMITTER VOLTAGE (VCE)-V

BI012

6

Fig.3-Maximum operating area for forward·bias operation
far type 40836.

..I

Fig.4-Maximum operating area for forward·bias operation
far type 40837.

1

z

5

iin

4

l!I

92CS-22B55

.,

.

~5

!!.

51

BIOO

COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V

92CS-228S9

...'~"
c

o
-100

-50

o

:SO

100

150

lOO

-100
92CS-19066

CASE TEMPERATURE (TC)--c

-so

50

75 100

150

200
92Ss.448JRI

CASE TEMPERATURE(T& 25°C

Fig.5-Dissipation derating curve far type 40836.

Fig.6-Dissipation derating curve for type 40837.

SUPPLY CURRENT "cela-IIOmA

SUPPLY CURRENTIIcci = _ISOmA
FREQUENCY' (I) - 2 GHI.
1.5 CASE TEMPERATURE{T )- 250(

FREQUENCY (f)-2GHz
CASE TEMPERATURE tT 1.25·C

~~

~

..'"

~

00.4

0.5

0.2

o
-10

-12

-14

-16

-18

-20

-22

DC SUPPLY VOLTAGE (Vcc'-V

_10

-24

-IS
-20
DC SUPPLY' VOLTAGE (Vee) _ v

_25

-30

t2CS-19067

Fig.7- Typicaloutput power vs. supply voltage far the 2·GHz,
grounded-collectfJl' oscillator (Fig. 11 J for type 40836.

Fig.8-Typical output power lIS. supply voltage for the
2·GHz, grounded-collector oscillator (Fig. 11J for
type 40837.

253

40836,40837

File No. 497
SUPPLY CURRENT Ucc) = _150m;'
FREQUENCY (I) - 2 GHz
1.5

'"I
g

0.7

15

SUPPLY VOlTAGE (Vee) .. -28 V

-24

0 .6

~

0.3

0.'

.0

40

80

60

100

110

zo

40

60

80

!l2SS-44a6R1

92C:5-19072

Fig.9-Typical
out,.ut power
vs.
collector·terminal
temperawre for 40836 (circuit shown in Fig. 111.

Fig.10-Typical output power vs. collector· terminal
temperature for 40837 (circuit shown in Fig. 11).

APPLICATION DATA
-21 v (40836)
Vee.· 2BV (40B37)

470 pf. feedthrough

Allen-Bradley FA4C. or
equivalent

O.2p: F. disc ceramic

0.35 to 3.5 pF. Johanson
4702. or equivalent
RF choke, 0.5 in. {12.70 mm}

R,

r

c3

L,

r

length of No. 32 wire

c.

L3: Copper strip:
0.005 in 10.1271mml thick
0.18 in. 10.457 mml wide
0.3 in (0.76 mm) long

L.

Rl: 10n.%W
R2 : Oto 500 n. 2W
R3: 1200 n. % W

RCA
40836
40837

9ZSS-3831R2

NOTES: 1. The circuit shown above is tunable over the range of 1.8 GHz.
to 2.1 GHz.
2. For operation below 1.8 GHz, increase emitter-base capacitance
and the value of L3'
3. For operation between 2.1 GHz and 2.3 GHz. increase the collectt
base capacitance and decrease the value of L3'

Fig. 11- Typical 2·GHz, grounded-collector power oscillator.

254

..

,

CASE TEMPERATURE {Tel. 250C

CASE TEMPERATURE lTC1-·C

~

File No. 497

40836,40837

HOLD-DOWN SCREW
(4-40 X liN., NYLON)

C2
C3

92SS-3B32R2

50 Do SCREW-ON TYPE
BULKHEAD RECEPTACLE
SEALECTRO NO. 50-046-0000,
OR EQUIVALENT

SYMBOL

INCHES

MILLIMETERS

A
B
C

0.53
0.16
0.25
0.75
0.75
0.625
1.25
0.062
1.0
0.375
0.281
0.75
0.93
0.421
0.62S
0.25
0.375
0.75

1.35
0.41
0.63
1.90
19.05
15.87
28.57
1.57
25.4
9.52
7.14
19.05
2.36
10.69
15.87
6.63
9.52
19.05

D

EMITIER
BASE

E
F
G
H
J
K
L
M
N
P

a

R
S
T

NOTE,
MATERIAL 1116 (1.52) THICK COPPER

Fig.12-Constructional details of 2·GHz power oscillator
shown in Fig. 11.

255

File No. 514

oornLJD

RF Power Transistors

Solid State
Division

40893
1S-W, 470-MHz Emitter-Ballasted
Overlay Transistor
Silicon N-P-N Type for Class C Amplifiers in 12.5 - V
Mobile Communications Equipment

Features:
•

5.2-dB gain (min.) at 470 MHz. POE ~ 15 W (min.)

• VSWR tested -

RCA HF-36
Package

(D

:1, PIE

~

4.5 W

•

For operation in the 406-512-MHz band

•

Integral emitter-ballasting resistors

•

Hermetically-sealed, ceramic-metal, stud package

•

Low-inductance radial leads for stripline circuits

•

All leads isolated from mounting stud

RCA-40893* is an epitaxial silicon n-p-n planar transistor
with "overlay" emitter-electrode construction.
Integral emitter-ballast resistance is employed for improved
ruggedness and increased overdrive capability.
* Formerly RCA Dev. No. TA7686

The 40893 features a hermetic, ceramic-metal package with
rugged, low-inductance radial leads for stripline or lumpedconstant circuits.
This transistor is intended for use in high-power, broadband,
mobile uhf amplifiers operating from a 12.5-volt supply_

COLLECTOR -SUPPLY VOLTAGE tVee I ~12.5 V

CASE TEMPERATURE tTel

~25°C

MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-EMITTER VOLTAGE:
With base open . . . . . . . . . . . . . . . .

VCEO

14

V

COLLECTOR-TO-BASE VOLTAGE .. , .•

VCBO

36

V

EMITTER-TO-BASE VOLTAGE . • . . . . .

VEBO

4.0

V

CONTINUOUS COLLECTOR CURRENT

IC

3.0

A

TRANSISTOR OISSIPATION
At case temperatures up to 120 0 e .. .
At case temperatures above 120 0 e ... .

PT

TEMPERATURE RANGE:
Storage & Operating (Junction) . . . . .

CASE TEMPERATURE (During soldering):
For 10 s max. . . . . . . • . . • . . . .
fREQUENCY If I-MHz

W
20
Derate at 0.25 Wloe

-65 to +200
230

°c
Oc

92CS-19410

Fig. 1- Typical output power vs. frequency.

256

9-71

File No. 514

40893
= 250 C

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)
STATIC

TEST CONDITIONS

CHARACTERISTIC

SYMBOL

Collector-Cutoff Current

Voltage-V

Voltago-V

VCE

VEB

12.5

0

ICES

Collector-ta-Base
Breakdown Voltage

DC
Current-rnA

DC
B...

DC
Collector

IE

UNITS

Min.

Max.

-

10

20

36

-

200

14

-

200

36

-

4.0

-

IC

0

V(BR)CBO

LIMITS

rnA
V

Collector-ta-Emitter

Breakdown Voltage:

0

V(BR)CEO

With base open

V

With base connected
to emitter

V(BR)CES

Emitter-ta-Sase Breakdown

5

V(BR)EBO

Voltage
Thermal Resistance:

4.0

ROJC

(Junction-ta-Case)

V

°C/W

DYNAMIC
LIMITS

TEST CONDITIONS
CHARACTERISTIC

Supply

SYMBOL

Voltage
(VCC)-V

Input Power

UNITS

Frequency

(PIE) ·W

(f). MHz

Min.

Typ.

Power Output

POE

12.5

4.5

470

15

-

W

Power Gain

GpE

12.5

4.5

470

5.2

-

dB

Collector Efficiency

l1C

12.5

4.5

470

60

-

%

Load Mismatch'
(See Fig. 10)

LM

12.5

4.5

470

Go/No Go

Collector-ta-Base
Capacitance

Cabo

1

60 (max.)

12(VCB)

pF

TYPICAL APPLICATION INFORMATION

CIRCUIT

OUTPUT POWER

INPUT POWER

Collector Efficiency

(POE)-W

(PIEI-W

(l1C)-%

Figure No.

4'

406-MHz Amplifier

18.0

4.5

68

512-MHz Amplifier

14.5

4.5

65

4'

450-470·MHz Amplifier

15.0

4.5

60-72

4-

•
•

Amplifier tuned: to indicated frequency.
Amplifier tuned at 470 MHz for maximum gain and minimum input reflection.

257

File No. 514
AMPLIFIER TUNED FOR MAX"IMUM OUTPUT AT 470 MHz

COLLECTOR-SUPPLY VOLTAGE (Vecl-12.S v
CASE TEMPERATURE I TC)" 2S·C

INPUT POWER IPIEI-W
92CS-19412

92CS-19411

Fig. 2- Typical output power and collector efficiency vs.
input power.

Fig. 3- Typical performance of the 450-470-MHz amplifier
shown shown in Fig. 4

Cl. C2. C4. Cs -,2-18 pF. Amperex HT10MA/218.
C3 - 30 pF. American Technical
Ceramics ATe-l00 •
Ca - 0.01 /l F. disc ceramic

C7 -1000 pF. feedthrough
IAlien-Bradley F ASC •

~~::: ~~~lf.i~C-l00.
L3 - O.22I1H. rf choke
L4 - 10 turns No, 22

wire, 0.12" 10
• Or equivalent

?52g~,

-.L
u~~11

L,

Allen-Bradley Co., Milwaukee, Wise,
American Technical Ceramics
Huntington Station, N.V.

a l2 * ~:::;=

I

fl.-1.25 --1- 1.0
1- 131.75) -1·125.4)1
DIMENSIONS IN INCHES AND MILLIMETERS
(MILLIMETER VAL.UES IN PARENTHESESI

92CS-19413

• Produced by etching upper laver
of double"Clad teflon board:
1/16 in. thick, € = 2.6

Fig. 4-Amplifier test circuit for measurement of output
power, gain, efficiency, and load mismatch.

~~..

~~~=

COLLECTOR-SUPPLY VOLTAGE (Ycc1-V

CASE TEMPERATURE (Te,-DC
92CS-19414

Fig. 5- Typical output power vs. collector-supply voltage.

258

92CS-19415

Fig. 6- Typical output power vs. case temperature.

40893

File No. 514
lOa CASE TEMPERATURE ITel ·,oo·c

"I

Ie MAX.ICONTINuousl

u

t!

E
a:

!'MlllnM
~

u

j

8
0.1
6

a

14

6

8

10

100

COLLECTOR-TO-EMITTER VOLTAGE IVCE)-V
92CS-19420

Fig. 7-Maximum dc operating area for type 40893.

92CS-19416

Fig. 8- Typical large-signal series input impedance
v.t frequency.

TERMINAL CONNECTIONS
Terminal No, 1, 3 - Emitter
Terminal No, 2

- Base

Terminal No.4

- Collector

WARNING: The ceramic body of this device contains
,beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

92CS-19417

Fig. 9- Typicallargf1oSigna~ parallel collector load
impedance vs. frequency.

SPECIAL PERFORMANCE DATA
The transistor must withstand any load mismatch provided by
the following test conditions:
1. The test is performed using the arrangement shown.
2. The tuning stub is varied through a half wavelength, which
effectively varies the load from an open circuit to a short
circuit.
92CS-19418

3. Operating conditions: VCC = 12.5 V, rf input power = 4.5 W.
4. Transistor dissipation rating must not be exceeded during
the above test so that the transistor will not be damaged
or degraded.

Fig. 10-Test set·up for testing load-mismatch capability.

259

File No. 548

D\l(]3LJ1]

RF Power Transistors

Solid State

40894 40896
40895 40897

Division

High - Frequency
Silicon N-P-N Transistors
For TV-Tuner, FM and AM/FM "Front-End", and
IF Amplifier, Oscillator, and Converter Service
Features:
• High gain·bandwidth products:
fT = 1200 MHz typo for tuner types
= 800 MHz typo for if-amplifier types
• Very low collector-to-base feedback capacitance:
Ccb = 0.7 pF typo for 40894,,40895
JEDECTO·72

H-1299

• Low noise figure:
3 dB typo at 200 MHz for rf amplifier type

RCA·40894, 40895, 40896, and 40897 are high·frequency
n·p·n silicon devices characterized especially for rf, mixer,
oscillator, and if stages of vhf, SSB, and FM receivers.
These devices utilize a hermetically sealed four·lead JEDEC
TO·72 package. All active elements of the transistor are in·
sulated from the case, which may be grounded by means of
the fourth lead in applications requiring minimum feedback
capacitance, shielding of the device, or both.

• High power gain as neutralized amplifier:
GpE = 15dB min. at 200 MHz (40894)
• High power output as uhf oscillator:
POE = 20 mW typo at 500 MHz (40896)
• Low noise figure:
NF = 4.5 dB max. at 200 MHz (40894)
• Low collector·to·base time constant:
rb'Cc = 14 po max.

MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR·TO·EMITTER VOLTAGE .... : .................
COLLECTOR-TO-BASE VOLTAGE ..........................
EMITTER-TO-BASE VOLTAGE .............................
CONTINUOUS COLLECTOR CURRENT ......................

.
.
.
.

TRANSISTOR DISSIPATION ................ , ..............
With heat sink, at case temperatures up to 25°e ...............
With heat sink, at case temperatures above 25°e ...............
At ambient temperatures up to 25°e .......................
At ambienttemperatures above 25°e .......................
TEMPERATURE RANGE:
Storage & Operating (Junction) ...........................
CASE TEMPERATURE (During soldering):
At distances ;;;'1132 in. (0.8 mm) from ..ating
surface for 10 seconds m~x.

.
.
.
.
.

260

.

veEO
VCBO
VEBO
Ie
PT

~.5

V
V
V

50

rnA

12
20

300
Derate linearly 1.71
200
Derate linearly 1.14

mW
mW/oe
mW
mWl"e

-65 to +200

°c

265

°c

12-71

F.ile No. 548 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40894-40897
ELECTRICAL CHARACTER ISTICS at Ambient Temperature (TAl

25°C unless otherwise specified

TEST CONDITIONS

CHARACTERISTICS

SYMBOLS

FREQUENCY

MHz

VCB

Collector-Cutoff

Current

VCE

VEB

OCCURRENT
mA
IE

IC

TYPE 40894
RF AMPLIFIER

IS Min.

15

0

-

15

0

-

Typ ..

-

Max. Min.

0.02

-

1

-

UNITS

Typ.

Max.

-

0.02
"A

0

V(BRICBO

0.001

20

-

20

15

-

15

2.5

-

2.5

-

0.4

Breakdown Voltage~

Collector-ta-Emitter

TYPE 40B95
MIXER

ICBO

TA = 150°C

Collector-ta-Base

LIMITS

DC COLLECTOR OR
EMITTER VOLTAGE
V

3

VCEO(sus)

0

1

-

-

V

.-

V

-

-

V

-

0.4

V

Sustaining Voltage
Emitter-to-Base

0.01

V(BRIEBO

0

Breakdown Voltage

ColleCtor-ta-Emitter
Saturatio~ Voltage

VCE(satl

10

1

Base-ta-Emitter

VSE(sat)

10

t

1

1

V

Saturation Voltage
Static Forward Current-

hFE

6

1

50

BO

250

40

70

250

6
6

5
2

9
25

14

20
300

9

90

25

14
90

20
300

0.7

1

-

0.1

1

pF

2

pF

14

ps

Transfer Ratio
Magnitude of Common-

Emitter, Small·Signal
Short·Circuit. For-

100
ihf.1

1 kHz

Ccb

0.1 to 1

Common-Base Input
CapacitanceC

Cib

0.1 to 1

Collector-ta-Base

rb'Cc

31.9

GpE

10.1
200

NF

200

ward Current

Transfer Ratio a

Collector-ta-Base
Feedback Capaci-

a

10

tanceb

a

-

-

2

2

3

7

14

12
12

5
5

-

-

-

-

21

-

-

15

15

21

--

dB

6

1.5

-

3

4.5

-

-

-

dB

0.5

6

3

7

Time Constanta
Small·Signal Power Gain
in Neutralized Common-Emitter Ampli·

fier Circuita (see
Fig. 6)

Noise Figure8

'Lead No.4 leasel grounded; Rg .. 125n
bThree·terminal nwasurement of the collector·to-base capacitance
with the case and emitter leacb connected to the guard terminal.
cued No.4 lcese' floating.

261

40894-40897 - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ File No~ 548
ELECTRICAL CHARACTER ISTICS at Ambient Temperature ITAI ~ 2SoC unless otherwise specified

TEST CONDITIONS
CHARACTERISTICS

SYMBOLS

FREQUENCY
MHz

VCB

Coliector·Cutoff
Current

LIMITS

DC COLLECTOR OR
EMITTER VOLTAGE
V
VCE

VEB

OCCURRENT
mA
IE

IC

TYPE 40896
OSCILLATOR

IB Min.

TVp.

TYPE 40897
IF AMPLIFIER

Max, Min.

UNITS

TVp.

Max.

0.02

15

0

-

-

0.02

-

-

15

0

-

-

1

-

20

-

-

20

-

-

V

15

-

-

15

-

-

V

-

2.5

-

-

V

0.4

-

-

0.4

V

pA

ICBO
TA = 1SOOC

Collector-to-Base
Breakdown Voltage ...

ViBRICBO

Collector-to-Emitter

VCEOisusl

0

0.001

3

0

Sustaining Voltage

Emitter-to-Base

0.01

ViBR)EBO

0

2.5

Breakdown Voltage
ColleCtor·to·Emitter

VCEisa.)

10

1

-

-

VBElsa.)

10

1

-

-

1

-

-

Saturati0!1 Voltage
Base-ta-Emitter

Saturation Voltage

Static Forward Current·

hFE

1

1

V

6

1

27

50

250

70

120

250

5
2

9
25

14
90

20

300

9
25

14
90

300

0.7

1

-

0.7

1

pF

-

2

-

-

2

pF

7

14

3

7

14

ps

Transfer Ratio
Magnitude of Common·

Emitter. Small·Signal

100

6

Ihle I

1 kHz

6

Ccb

0.1'01

Common·Base Input
Capacitancec

C;b

0.1 tal

Collector·to·Base

'b·Cc

31.9

GpE

10.7
200

NF

200

Short·Circuit, For·
ward Current

20

Transfer Ratio'
Collector-to-Base

10

0

Feedback Capaci·
tanceb
0.5

0

2

3

12
12

5
5

-

-

25

21

-

18

15

-

-

-

dB

6

1.5

-

-

-

-

-

-

dB

6

Time Constanta

SmaU-5ignal Power Gain
in Neutralized Common-Emitter Ampli·

fier Circuits (see
Fig. 6)

Noise Figure8

eLe.I No.4 (ane) grounded; FIg • 1250
brhree·termine' nwnurerrent of the coIlectONO-bne captciunC8
with the mu end emitter Iud, connected to the guerd termiNI.
CUat No.4 Icne) floati"4l.

262

40894-40897

File No. 548
COMMON-EMITTER CIRCUIT,BASE INPUTi
OUTPUT SHORT-CIRCUITED
FREQUENCY In aiDa MHz
AMBIENT TEMPERATURE (TA)-25°C
COl.LECTOR-lO-EMITTER VOLTAGE (VCE' =61.1

10

o

15
20
25
30
COLLECTOR CURRENT (ICI-mA

35
92CS-14169RI

Fig. I-Small'signal beta characteristic for all types
TWO·PORT ADMITTANCE (y) PARAMETERS AS FUNCTIONS OF
FREOUENCY (f) FOR ALL TYPES
CO~~~~UfM~1lo~~:b~~H~Ttr~SE

INPUT.

COLLECTOR-lO-EMITTER VOLTAGE (VCE)" 4\1

~~i~i~r'fE~~~RRENJ~~(+:)m!'250C
o
~
:>

o

~

20f---+-++-f-

i ISI---f--+--+-++++++--+-+--+-+-H-t-H

---

c§

ISf---+-++++-!+I+---+--+---1---1++++1

~i
GJ! 12f-----+-++++-!-I-'1+-,,,""
i!5!i!l

....ittJ

~ 8f---j-+-+-t~f-+t+--~-f---+-H+1-H2 ~

~6
/

~~ 4r---+--r-r-b~i·~~+_-~b!+-t-t~rtH

....-g;r

10

"~

~IOI---r--+--+-++++++--+-+--+-+-H-t-H

,,~

V

reI21---f--+--+-++++++--+-+--+-+-I-t-t-H I~'"
E

_0

/

~4

r.S

..

~

..

-I--r-f

100

10

6
8 100
2
FREQUENCY UI- MHz

1000

FREOUENCY (f)-MHz

92CS-1473tRI

Fig. 2-lnputadmittance (Yiel.'

~

boeV
I
~21-'--f--+--+-++++++--=~~rg'~'~TO-n,050
0 0

92CS-1473QRI

Fig. 3-0utput admittance (yael
COMMON EMITTER CIRCUIT: INPUT SHORT-CIRCUITED.
COLLECTOR-TO-EMITTER VOLTAGE (VCE) = 4V

i~~Ti~i°-rE~~~ENu'~~i~:)",=A25OC
NOTE: 9re IS NEGLIGIBLE AT FREQUENCIES UP TO

j

~OO

II I
II I
MHz

b re

0

",0
u~

............

z:>

j! E _I

"

"I
~1!
o~
"

"''''
~!o!

-2

~j!

~~-3
~~

ffi",

[;j °_4

'"
FREQUENCY (f1-MHz

10

,

4

•

.

100

FREQUENCY (f)-MHz

4

..

1000

92CS-14729RI

92CS-14128RI

Fig. 4-Forward transadmittance (Yfel,

,

Fig. 5-Reverse transadmittance (Yrel

263

40894-40897

File No_ 548
eN

DC COMMON

1-5

r
~~&M

r-l

I

~

TYPE TYPE

L3

IN3195 IN3195

TO
5011

2·10 LOAD
9111

0.02

SOURCE p.F

LO

C7

2-10

r

0.1
~F

CI

3-35

CO"
2-10

10K

f_

C6

0.001

and C7 for maximum amplifier output, readjusting the generator
output as required to maintain an output of 5 mV from the amplifier. (e) Interchange the connections to the signal generator and the
rf voltmeter. (1) With sufficient signal applied t~ the output terminals
of the amplifier, adjust eN for a minimum indication at the amplifier
input. (g) Repeat steps (at, (b), (c),and (dJ to·determine if retuning
is necessary.

a = Type 40894, 40895, 40896, or 40897

~F

lOr

NOTE: (Neutralization Procedure): (a) Connect a 5O-.n rf voltmeter to the output of a 200-MHz signal generator (Rg "" SOn), and
adjust the generator output to 6 mY. (b) Connect the generator to
the input and the rf voltmeter to the output of the amplifier, as
shown above, (el Apply VEE and Vee. and adjust the generator
output to provide an amplifier output of 5 mY. ~d) Tune C2, C6.

Ll : 1-3/4 turns No. 18 wire 0.5 in. (12.7 mmllong, 0.5 in. (12.7
mmllO
L2: 2 turns No. 16 wire, 0.5 in. (12.7 mmJ long, 0.5 in. (12.7 mm)
10
L3: 2 turns No. 18 wire, 0.25 in. (6.35 mmJ long, 0.5 in. (12.7 mm)
I D. Position approximately 1/4 in. (6.35 mm) from L2.

RFC
I~H

-VEE

+ Vee

92CS 14153RI

All capacitances in pF unless otherwise specified.

Fig. 6-Neutralized amplifier circuit used to measure power gain and noise figure at 200 MHz for all types

TERMINAL CONNECTIONS
Lead 1 Lead 2 Lead 3 Lead 4 -

264

Emitter
Base
Collector
Connected to case

File No. 538

OOOBLJD

RF Power Transistors

Solid State

40898
40899

Division

r.
~""""
.•

(JEDEC TO·215AA

\

Packagel

RCA40899
(JEDEC TO·201AA
Package)

6- and 2-W, 2.3-GHz Emitter-Ballasted
Silicon N-P-N Overlay rransistors
For Microwave Power Amplifiers, FundamentalFrequency Oscillators, and Frequency Multipliers
Features:
• Designed for 20· to 24N equipment
• Emitter-ballasting resistors
II 6-W output with 6-dB gain (min.) at 2.3 GHz, 22 V - 4OB99
.. 2-W output with 7-dB gain (min.) at 2.3 GHz, 22 V - 40898
• Stable common-base operation
II Ceramic-metal hermetic packages with low inductances and low parasitic capacitances
•

For coaxial, microstripline, and

The RCA-40898 and 40899* are epitaxial silicon n-p-n planar
transistors with overlay multiple'emitter-site construction, de·
signed especially for 20- to 24-volt operation. They are in·
tended for solid-state equipment in microwave communications, S-band telemetry, microwave relay links, phased-array
radar, distance-measuring equipment, and collision-avoidance
systems in the frequency range from 0.5 to 2.4 GHz.

lumped~onstant

circuit applications

The ceramic'metal packages of the40898 and 40899 have low
parasitic capacitances and inductances for stable operation in
the common-base amplifier configuration. The use of emitter·
baliasting resistors provides ruggedness and reliability.
These transistors can be used in large-signal applications in
coaxial, stripline, and lumped-constant circuits. The 40898 is
a good driver for a 40899 output stage.

*Formerly RCA Dev. Nos. TA8439 and TA8440.

MAXIMUM RATINGS,Absolute-Maximum Values:

COLLECTOR-TO-ilASE VOLTAGE: .•••••...•...•...

V CBO

40898

40899

45

45

V

V

COLLECTOR-TO-eMITTER VOLTAGE:

With external base-to-emitter resistance
(RBEI

=Ion

............................ .

45

45

EMITTER·TO-BASE VOLTAGE: ....•....•..•...••.

3.5

3.5

V

CONTINUOUS COLLECTOR CURRENT: •••.••..•••.

0.35

1.5

A

TRANSISTOR DISSIPATION: .................... .
At case temperatures up to 7SOC ............. .
At case temperatures above 75°C, derate linearly . .

4.15
0.033

14.8
O.IIB

w

TEMPERATURE RANGE:
Storage & Operating (Junction) •......•.......

wfc

-65'0+200

CASE TEMPERATURE (During soldering):
For10smax ...................•.........
(See Soldering I nstructions on page 7.)

---230 - - -

12-71

265

40898,40899 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tcl

File No. 538

=25·C

STATIC
TEST CONDITIONS
CHARACTERISTIC

DC
VOLTAGE
V

SYMBOL

40898

0

VIBR)CBO

40899

UNITS

MIN.

MAX.

MIN.

-

2

-

2

mA

45

-

45

-

,V'

10

45

-

45

-

V

0

3.5

-

3.5

IC

40

ICES

Coliector·to·Base Breakdown Voltage

IB

IE

VCE

Collector-Cutoff Current

LIMITS

DC
CURRENT
mA

6

MAX.

Collector-to-Emitter Breakdown,Voltage:

With external base-to-emltter
resistance IR BE )

= 10 n

VIBR)CER

Emitter-to-Base Breakdown Voltage

0.1

VIBR)EBO

Collector-to-Emitter Saturation
Voltage

10
20

VCElsat)

Thermal Resistance: IJunction-toCollector-Terminall

-

100
100

-

1

-

-1

30

-

8.5

-

ROJCT

V
V

·CIW

DYNAMIC
TEST CONDITIONS

CHARACTERISTIC

SYMBOL

INPUT
POWER
IPIB)oW

OUTPUT
POWER
IPOB)oW

LIMITS

SUPPLY
VOLTAGE
IVCC)'V

FREQUENCY
If)-GHz

22
22

2.3
2.3

2.0

7.0

POB

0.4
1.5

Power Gain

GpB

0.4
1.5

2
6

22
22

2.3
2.3

Collector Efficiency

'IC

0.4
1.5

2
6

22
22

2.3
2.3

Collector-ta-Base capacitance

Cobo

30 IVCB)

1 MHz

Output Power

ISee Fig. 17)

40898·

40899
UNITS

MiN.

-

35
-

MAX.

MIN.

-

MAX.

-

-

-

6.0

-

-

W

-

6.0

-

-

-

%

4

-

11.5

pF

-

35

dB

TYPICAL APPLICATION INFORMATION
CIRCUIT & FREQUENCY

Coaxial-Line
2.3-GHz Amplifier

Coaxial-Line

SEE
FIG.

SUPPLY
VOLTAGE
IVCC)'V

4OB99

40898
INPUT POWER
IPIB)·W

17
21

22
22

0.4

-

OUTPUT POWER
IPOB)'W
2.1

INPUT POWER
IPIB)oW

-

-

1.5

OUTPUT POWER
IPOB)oW

-

6.5

21

22

-

-

1

13.5

LumpedoConstant
1-GHz Amplifier

19

22

0.21

3.8

-

-

Lumped-Constant
2-G Hz Oscillator

18

22

0.75

-

-

1.2-GHz Amplifier

266

File No. 538

40898,40899
PERFORMANCE DATA

CASE TEMPERATURE (Tc

• 25-C

CASE TEMPERATURE (TC ) • 25-e
COLLECTOR -SUPPLY VOLTAGE (Vee) -Z2V
EMITTER RESISTANCE (R.). D.nn AT 1.20Hz
• 0.24 n AT 2.3 GHz

COLLECTOR -SUPPLY VOLTAGE (Vee). 22 V

6

~ 20

.. 5

-!.

~4

..

.,~16
~ 12

Hi
Q~

~ 3

D.,,,

.5
eo

il

2

INPUT POWER

o

~

2.0

2.5

FREQUENCY (fl- GHz

8

1.6
FREQUENCY ltl- GHz

CASE TEMPER ATURE (TC ) • 25-C

CASE TEMPERATURE CTc) • 25-C

COLLECTOR - SUPPLY VOLTAGE tVee). 22 V

COLLECTOR SUPPLY (VC C) - 22 V
FREQUENCY (f) ·2.3 GHz
EMITTER RESISTANCE (R.) -0.240

',?"I

..
'"I

~2

..

Po&

Hi

it

~ 6

~

I

40~

"Ie

.0

I

~B

u

8

2.4
92CS-19843

.. 10

see
50~

~

2.0

Fig.2- Typical output power lIS. frequency for type 40899,
measured in the testset·up of Fig. 17.

3 FREQUENCY (f ) ·2.3 GHz

"

1.2

0.8

3,0

92CS-19842

Fig. I-Typical output power lIS. frequency for type 40898,
measured in the test set·up of Fig. 17.
'

~

<.

5

'''zs} -0., ..

1.5

1.0

'.0

..Hi

."5

~O\l

0-

o

'Ie

4

30

o
o

0.2

0.1

0.3

INPUT POWER(PIS)- W

0.4

0.4

Fig. 3- Typical output power and col/ector efficiency
input power at 2.3 GHz for type 40898.

1.2

1.6

INPUT POWE~ lP'I01-W
lIS.

2.0
12CS-11847

Fig. 4- Typical output power and collector efficiency
input power at 2.3 GHz for type 40899.

CASE TEMPERATURE (TC) .25-C
COLLECTOR -SUPPLY VOLTAGE. 22 V
FREQUENCY Ct) -1.2 GHz

lIS.

CASE TEMPERATURE (Te) • 25-C
COLLECTOR-SUPPLY VOLTAGE (Vec) ·22 V
24 FREQUENCY (f) -1.2GHz
EMITTER RESISTANCE (R.l -0.715 n

.. .

'"I

~

~

~4

1;

..Hi

0.8

92CS-19846

ffi

.~

~

~ 3

70 ~

~
52

0

60

.. 20

I

~

16

~

12

;

'Ie

~
~

E

6O~

~

50

40

~

8
0

0.1

0.2

D.'

0.4

INPUT ·POWER (PJsJ-W
I2CS-19844

Fig. 5- Typical output power and col/ector efficiency lIS.
input power at 1.2 GHz, for type 40898 in common·
base coaxial-line amplifier circuit

o

0.4

0.8
INPUT POWERtPIO)-W

1.2

1.6
12CS-19845

Fig. 6- Typical output power and collector efficiency
inputpowerat 1.2 GHz for type 40899.

vs.

267

40898,40899

File No. 538
PERFORMANCE DATA (cant'd.)
J • 25-C
INPUT POWER (PIal 'IW

CASE TEMPERATURE (TC

EMITTER RESISTANCE (R.l-O.24 D.
FREQUENCY (f). 2.3 GHz

o

la

as

16
20
24
COLLECTOR-SUPPLY, VOLTAGE IVee)-V

COLLECTOR-SUPPLY VOLTAGE (Ycc)-V

82CS-18848

Fig. 7- Typical output power and collector efficiency vs.
collector-supply voltage at 2.3 GHz for IYpe 40898.

92C$-19849

Fig. 8- Typical output power and collector efficiency vs.
collector supply voltage at 2.3 6Hz for IYpe 40899.

CASE TEMPERATURE (TC) • 25-C
FREQUENCY (f ) • 2 GHz

CASE TEMPERATURE (Tc) • 25·C

FREQUENCY (f)· I MHz

2

200

.,
!,I

..
E

"I.e

I

I

"0

30

IOO~"

1'0

~

~

Ii!

1l

I-

l!i
I-

~.

50

0

0

~

40899
u

~

10

40898

-ao

-a8
-2'
EMITTER-lO-COLLECTOR VOLTAGE tyEC»-V

-18

30

10

20

30

40

COLLECTOR-TO-BASE VOLTAGE (VCB'-V
92CS-19850

Fig. 9- Typical output power and collector current vs.
emitter-to-collector voltage, for IYpe 40898 in 2-GHz
grounded-collector'oscillator circuit shown in Fig. 18.

·

92eS-19BSI

Fig. 10-Typical collector-trrbase capacitance vs. collectorto-base voltage for IYpes 40898 and 40899.

CASE TEMPERATUREITCI-IQO·C

..

350

~

Ie (MAX.) CONTINUOUS

2

"

CASE TEMPERATUREITcl= 100 "C

I' ~SPOT
1~)'200'CTEMPERATURE

t!

~ ••

~

~I.O

IcIMAX) CONTINOUS

"

•

,.
::I

2

8

(TJS' IS DETERMINED BY
2 I- INFRAREr SCANNING '

OJ

on

,/

'\

HOT-SPOT
TEMPERATURE -

(T'S)'2oo'C,--

"f\.

~

f;l

NOTE:

HOT-SPOT TEtII'ERATURE

8

I.'

•

[5100

•

.

I•

I-

~

2

NOTE:
HOT-SPOT TEMPERATURE
IT JS) IS DETERMINED
BY INFRARED SCANNING

I

1

2
10
COLL~TOR-TO-BASE VOLTAGEtvCB)-V

20

Res-Ita"

Fig. 11-safe area for dc' operation .of type 40898.

268

10
COLLECTOR-TO-BASE VOLTAGE(VCB) _- v

15

20

t!eS-IIBS!

Fig. 12-satearea for de operation of type 40899.

File No. 538

40898,40899
DESIGN DATA'
COLLECTOR - SUPPLY VOLTAGE tYee ·22 Y I
OUTPUT POWER: SATURATED
15 CASE TEMPERATURE (Tel- '2~"C
SERIES INPUT IMPEDANCE=RIN+jXIN

co

I
N 20

~

10

§

5

~

~
~

'f
~
~

10

0

-.

'

~l!ilIC!OIL!LEICIToIRiL~oIAlo!'MiP!EID!ANIC!Ei'lR!CLI+Il XCjLlIil i
~",ll..ll'~~
R.CZel'

RetZIN)
POINT FOR liN

MEASUREMENT

RCA- 40899

/

~

-10

"~II)
~,

POINT F.OR ZCL
MEASUREMENT '

....

-10
1.2

0 .•

I ••
FREQUENCY tf) - GHz

2.0

92CS-19856

FREQUENCY (f) -GHz
92CS-19855

Fig. 13-Typicallarge-signal input impedance and large-signal
collector load impedance IIS_ frequency for type
40898.

Fig. 14- Typical large-signal series input impedance and largesignal collector load impedance lIS. frequency for
type 40899.

7 COOLING FINS

.012 SLOTS
.100 DEPTH
.:375 DIA.

BRASS .0005
SILVER PLATE
92CS-19854

Fig. 15- Type 40898 in coaxial-line rest fixture for 1.2- and 23-GHz amplifiers.
DIMENSIONS
COAXIAL OUTPUT
CONNECTOR*

INPUT IX,.

CIRCUIT
A
1.2-GHz 1.385
Amplifier 135.181

aBl5

2.3-GHz

0.262
16.651

0.7n

Amplifier (19.61)

OUTPUT 1X2)

Center
Conductor

0.282
122221 17.161
0.265
16.731

Center
Conductor

OB25
(20.951

1.778 1.268 0.213
145.161 (32211 (5.411

1.05
126.671

0.212
(5.391

0.922 OA12 0270
123.491 (10.421 (6B8)

0.245
(6.221

DIMENSIONS IN INCHES AND MILLIMETERS

Dimensions in parentheses are in millimeters and are derived from the
basic inch dimensions as indicated.
COAXIAL INPUT

CONNECTOR·

f----

INPUT X l - t - 0 U T P U T X 2 - - 1

MATERIAL:

Center conductor-copper
Outer conductor for input & output-brass

*Conhex 50-O45'()OOO (Sealectro Corp.). or equivalent.

Fig. 16- Type 40899 in coaxial-line test fixture for 1.2- and 2.3-GHz amplifiers. See Fig. 21 for component values.

269

40898,40899

File No. 538
APPLICATION INFORMATION

*00 NOT USE BIAS TEES
FOR 40899 TEST
92CS-19857

Fig. 17-Block diagnJm of test set-up used for measurement of output power from 1.2- and 2.3-GHz common-base amplifiers.

C1

VEE ~ -22Y

~r-~f-----~"2~----------'-~A",Ar-'

Jl

",

C
'

C1: 0.01 IJF I disc ceramic
C2.C3: 100 pF, feed-through.Allen-Bradley FASC.orequiY8lent
C4,C5: 0.35 - 3.5 pF, Johanson 4701, or equivalent
Ll, L2: RF choke, 4 turns, No. 33 wire, 0.062 in. (1.57 mm)
10,3/16 in. (4.75 mm) long
L3: 3/64-in. (1.17 mm) length of No. 22 wire
XI: 0.82 pF, "gimmick", Quality Components type 10%
ac, or equivalent
Rl' 5-10n,1/2W
R2: 51 n, 112 W
R3: 1200 n, 1/2 W

r-!!.--,

Fig. 18- Typicalcircuit for 2-GHz grounded-collector power oscillator using type 4OB98.

RCA

. 40898

.;r.:-n
",

L]

(~JL

~
(6.98)

92Ss.4Zl4R3

Cl,C5,C6: 1-14 pF, elr-dielectric, Johanson 3901, or equivalent
C2: 0.35-3.5 pF, alr-dielectric, Johanson 4701, or equivalent
C3,C4: 1000 pF, feed-through, Allen-Bradley FA5C, or equivalent
C7: 1000 pF, coramic, leadl...
Ll,L2' RF choke, 0.1 pH, Nytronics Decl-Ductor
L3: O.OI~n. (0.254 mm) thick, 0,157~n. (3.98 mm) wide
copper strip shaped as shown in inset drawing
Rl: 1 n,112W

Fig. 19- Typical circuit for 1-GHz power amplifier using type 40898.

270

File No. 538

40898,40899
APPLICATION INFORMATION (cont'd)

510 pF, ATC-200

Cl.C7:
C2.C6:
C3:
C4.C5:
Ll:
L2:
L3:
R:
RFC:

or equivalent

1-10 pF. Johanson 2954 or equivalent
10 pF,ATC-l00 or equivalent

470 pF. feed-through type. Allen-Bradlev FA5C
3.7 nH
0.8 nH
2.3nH
0.47n
5 turns, No. 28 wire, 0.05 in. (1.27 mm) ID,c.4-in. UO.16
mm) long

l-dB Bandwidth

Vee -Z2Y

= 100 MHz

Fig. 20-Typicallumped-constant circuit for 1-GHz poVtKJr amplifier using type 40899.

RCA 40899

CIRCUIT
1.2-GHz
Amplifier

"·~1

1

Vee ·22V

2.3-GHz
Amplifier

Cl
pF

C2
pF

470

Cl & C5: 1-10 pF

... Use only in the 2.3-GHz coaxial-line power amplifier circuit.
• Use only in the 1.2-GHz coaxial-line power amplifier circuit.

C4
~F

1·10 1000 1000 0.01
1-10

CS. Ca· & C7: 0.3·3.5 pF

92CS-15666RI

C3
pF

470

0.01

C5
pF

Re

C6
pF

C7
pF

1-10

-

0.3-35

0.75

0.3·35

0.3-3.5

-

0.24

n

Johanson 4581 or equivalent
Johanson 4700 or equivalent

RFC: For 2.3-GHz circuit, 3 turns No. 32 wire 1/16 in. (1.59 mm) ID,

3/16 in. (4.76 mm)long.
For 1.2~Hz circuit, 6 turns No. 32 wire 1/16 in. (1.59 mm)

10.3/16 in. (4.76 mmllong •
Xl, X2: Coaxial-line circuits; see Fig. 16 .

Fig. 21-Coaxial-line amplifier circuits using type 40899 for operation at 1.2- and 2.3-GHz.

SOLDERING INSTRUCTIONS
When the 40898 or 40899 is to be soldered into a microstripline or lumped-constant circuit. the terminals of the device
must be pretinned in the region where soldering is to take
place. The device should be held in a high-thermal-resistance
support for this tinning operation. A 60/40 resin-core solder

TERMINAL CONNECTIONS
Terminal No. l-Emittor

Terminal No. 2-8ase
Terminal No.3-Collector

and a low-wattage (47 watts) soldering iron are suggested for
the pretinning operation. The case temperature should not
exceed 230°C for a maximum of 10 seconds during tinning
and subsequent soldering operations.

WARNING: The ceramic body of the RCA-40899 contains
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

271

File No. 547

[Rl(]5LJQ

RF Power Transistors

Solid State
Division

40909

2-W, 2-GHz Emitter- Ballasted
Silicon N-P-N OverlayTransistor
For Microwave Fundamental-Frequency Oscillators

Features:
•
•
•
•

JEDEC T0-201 AA PACKAGE

Emitter-ballasting resistors
2-W (min.) output at 2 GHz
4·W (typ.) output at 1 GHz
Emitter connected to flange (for increased internal feedback) for higher
efficiency at S·band frequencies in Colpitts oscillator circuits
• Beryllium-oxide ceramic for low thermal resistance between collector stud and
emitter flange
• For coaxial, stripline, and lumped-constant circuit applications

'RCA-40909" is an epitaxial silicon n-p-n transistor with overlay multiple-emitter-site construction, It is designed for use
in power oscillators at microwave frequencies. The ceramic-

metal coaxial package of the 40909 has low parasitic capacitances and inductances, and lends itself to mounting in

coaxial. stripline. or lumped-constant circuits. Intended
applications for this transistor include microwave communications, relay links, distance-measuring equipment, and
collision-avoidance systems.
"Formerlv RCA Dev, No, TA7943

MAXIMUM RATINGS,Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE
COLLECTOR-TO-EMITTER VOLTAGE:
With external base-to-emitter
resistance (RBE) = 10 n
EMITTER-TO-BASE VOLTAGE

..............

CONTINUOUS DC COLLECTOR
CURRENT

..........

TRANSISTOR DISSIPATION
At case temperature up to 75°C
At case temperatures above 75°C
derate linearly

CASE TEMPERATURE (During soldering):
For lOs max. .,
(See Soldering Instructions on page 4.)

...................

........... .................. .

272

V

VCER

50

V

VEBO

3.5

V

IC

0.7

A

10_4

W

0.083

wfc

..,.65 to 200

°c

230

°c

PT

.......

TEMPERATURE RANGE:
Storage & Operating (Junction)

50

VCBO

11-73

40909

File No. 547
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 25 0 C unless otherwise specified.
STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC
Collector
Voltage (V)
VCE

ICES
Coliector·Cutoff Current

LIMITS

Coliector·to·Base
Breakdown Voltage

V(BR)CBO

Collector·to·Emitter
Breakdown Voltage:
With external base·to·emitter
resistance (RBE) = 10 n

V(BR)CER

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

Collector·to·Emitter
Saturation Voltage

VCE(sat)

UNITS

(rnA)
IE

IB

IC

Min.

Max.

45

-

2

45

-

5

5

50

-

V

10

50

-

V

0

3.5

-

V

100

-

1

V

-

8.5

·C/W

ICES
(TC = 100·C)

Thermal Resistance:
(Junction to Coliector·Stud)

DC
Current

0

0.1
20

ROJCT

rnA

DYNAMIC
TEST CONDITIONS
SYMBOL

Frequency
(f) - GHz

DC Emitter
Supply Voltage
(VEE) - V

Oscillator Output Power
(See Fig. 6)

Po

2

25

2.0

-

W

Oscillator Circuit
Efficiency

11

2

25

20

-

%

CHARACTERISTIC

LIMITS
Min.
Max.

UNITS

TYPICAL APPLICA TlON INFORMATION

Application

Co lIector Current
(lC)-mA

DC Emitter
Supply Voltage
(VEE) - V

Output Power
(PO)-W

2·GHz Oscillator

400

25

2.5

l-GHz Oscillator

400

25

4.0

273

File No. 547

40909
PERFORMANCE DATA
CASE TEMPERATURE(TC1"25"C
FREQUENCY (t)- 26Hz

CASE TEMPERATURE (TC)=25"C

16
18
20
22
24
EMITTER- SUPPLY VOLTAGE (VEE)-V

FREQUENCY (tI-GHz

26

92CS-19796

Fig. 1- Typical oscillator output power
test set·up of Fig. 5.

.-s. frequency for the

Fig. 2- Typical 2-GHz oscillator output power
supply voltage.

vs. emitter-

1000 CASE TEMPERATURE (Tc) = 1000 C

,

B

CASE TEMPERATURE =25"C
, FREQUENCY (fI" 2GHz
5

I

5 f--1c MAX. CONTINUOUS

~.~~I~TER~SUPPLY VOL~.E (VEEI=25V

·

~

;e

HOT-SPOT

T£~ERATURE

\ ( TJS )·200 O C

,, ,

I'
I'"

<

\

~

~
a

100
B

i ··

~ 2

'"

~

1 ~TE:HOT SPOT TEMPERATURE (TJsl
IS DETERMINED BY INFRARED

SCtNNING
92CS-19798

Fig. 3- Typical oscillator output power and cirr:uit efficiency
.-s. collector current

I

I I I
6

8 1D

COLLECTOR. TO-BASE VOLTAGE (Vcsl- V

6

8 100

92CS-22852

Fig. 4-Safe operating area for dc operation.

SOLDERING INSTRUCTIONS

Fig. 5-Block diagram of test set-up for measurement of
oscillator output power.

TERMINAL CONNECTIONS

Terminal No, 1 - Base

Terminal No.2 - Emitter
Terminal No.3 - Collector

274

When the RCA-40909 is soldered into a circuit, the terminals
must be pretinned in the oegion where soldering is to take
place. The device should be held in a high-thermal-resistance
support for this tinning operation. A 60/40 resin·core solder
and a low-wattage (47 watts) soldering iron are suggested for
the pretinning operation. The case temperature should not
exceed 230·C for a ma·ximum of 10 seconds during tinning
and subsequent soldering operations.

WARNING: The ceramic body of this device contains
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

40909

File No. 547

*c,: Adjustable feedback capacitor for frequencies below 1.4 GHz.
0.3-3.5 pF. Johanson 4700 (Johanson Mfg. Corp., Boonton,
N.J. 07005) or equivalent.
RFC: 5 turns No. 28 wire, 0.05 in. (1.27 mm)r.D.,O.4 in. (10.16 mm)
long.

Fig. 6-Schematic diagram of basic oscillator circuit
UNIVERSAL BREADBOARD OSCILLATOR CIRCUIT'
FOR OPTIMIZING MECHANICAL DIMENSIONS

Fig. 7- Top view of test oscillator with cover removed.

Fig. 8-5ide view of test oscillator with cover removed.

Oscillation
Frequency

A

B

C

0

E

F

G

1 GHz

3.10 0.775 2.30 0.600 0.775 0.250 1.20
(78.741 (19.691 (58A21 (15.241 (19.691 16.351 13OA81

2GHz

2.00 0.775 0.975 0.160 0.775 0.250 0.600
150.80) (19.691 124.77) 14.061 (19.69) 16.35) 115.241

Dimensions In parentheses ara In millimeter.; derived from the balle
Inch dlmenllons shown.

Fig. 9-Drawing (inside view) of osr:illator, showing dimensions.

275

File No. 574

ffil(]5LJD

RF Transistors

Solid State
Division

40915

0.2-to-1.4" GHz Low-Noise
Silicon N·P - N Transistor
For High-Gain Small-Signal Applications

Features:
•

•
JEDEC TO-72

H-1299

Low noise figure:
NF = 2.5 dB (max.) with 11 dB gain at 450 MHz
= 3.0 dB .(typ.) at 890 MHz
= 4.5 dB (typ.) at 1.3 GHz
• High gain·bandwidth product
• Large dynamic range
High gain (tuned, unneutralized):
GpE = 14 dB (inin.) at 450 MHz • Low distortion
= 6.5 dB (typ.) at 1.3 GHz

RCA·40915 * is an epitaxial silicon n-p-n planar. transistor intended for low-power, small-signal applications where both
low noise and high gain are desirable. It utilizes a hermetically
sealed four-lead JEDEC TO-72 package. All of the elements
of the transistor are insulated from the case, which may be
grounded by means of the fourth lead.
*Formerly RCA Dev. No. TA8104.

MAXIMUM RATINGS, Absolute-Maximum Values:
Collector-to-Base Voltage

........ .

VCBO

35

Collector-to-Emitter Voltage ...... .

VCEO

15
3.5

Emitter-to-Base Voltage .......... .
Collector Current (Continuous) .... .
Transistor Dissipation:
At ambient temperatures up
to 25°C ............... .
At ambient temperatures above
25°C ................ .
Temperature Range:
Storage and Operating
(Junction) ............. .

VEBO
IC

V
V

40

V
mA

200

mW

1400
FREaUENCY If 1- MHz
92CS- 20062

Fig.l-Typical noise fjgure vs. frequency.

PT

Derate linearly
at 1.14mWtC

-65 to +200 °c
COLLECTOR-Ta-EMITTER VOLTAGE (VCEI~IOV
AMBIENT TEMPERATURE lTAI~ 25°C
NOTE: fT CALCULATED FROM MEASURED
VALUES OF S-PARAMETERS

10

15

COLLECTOR CURRENT tIel - mA

20
92CS-19735

Fig.2-Gain-bandwidth product vs. collector
current.

276

9-74

File No. 574

40915

ELECTRICAL CHARACTERISTICS at Ambient Temperature (TA)

25°C

TEST CONDITIONS

CHARACTERISTIC

DC
COLI.:ECTOR
VOLTAGE
(V)

SYMBOL

VCB

I

DC
CURRENT
(mA)
IE

VCE

I I
IB

LIMITS

MIN.

IC

I

UNITS

MAX.

STATIC
Collector Cutoff Current

ICBO

Coliector·to·Base
Breakdown Voltage

V(BR)CBO

Collector·to·Emitter
Breakdown Voltage

V(BR)CEO

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

DC Forward·Current
Transfer Ratio

hFE

Thermal Resistance:

10

-

20

0.01

35

-

V

0.1

15

-

V

0

3.5

-

V

3

20

-

-

0
0

0

0.01

10

ROJA

nA

-

880

°CIW

(Junction·to·Ambient)
DYNAMIC
Device Noise Figure (f = 450 MHz)

NF

10

1.5

-

2.5

dB

Small·Signal Common· Emitter
Power Gain (f = 450 MHz)
Unneutralized Amplifier

GpE

10

1.5

13

-

dB

1.0

pF

At minimum noise figure
Coliector·to·Base Output
Capacitance (f = 1 MHz)

10

Cobo

-

0

5 FREQUENCY tfl" 450MHr:
AMBIENT TEMPERATURE ITA)"25·C

'"1
~

I

4

'",
...

15

·2

2

~

~

.,,~

. . J ........
3
3V
6V

f-- ~
':.;;.;

2 COLLECTOR-TO-EMITTER

VOLTAGE (VCE)'" IOV

ill

fil
1

FREQUfNcr (f). IGltz
COLLECTOR-lO-EMITTER VOLTAGE tVCE)~IOV
AMBIENT TEMPERATURE ITA)a2SoC,ZG=ZL-SO.Q..

2

4

6

8

10

12
COLLECTOR CURRENT lIe I -mA

14

I:f±

H+

16

0
~,

18

I.'

2

4

COLLECTOR CURRENT (tel-rnA
92CS-19736

Fig.3-Typical ;nserrion power gain vs. collector current.

•

6

,0

92CS-19737

Fig.4- Typical noise figure vs. collector current.

277

40915 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Fi1e No. 574

Fig.5- Typical power gain (at minimum noise
figure) vs. collector current.

Fig. 8- Typical input reflection coefficient.

Vas··
IC-dB

~

.

~

FREQUENCY(Ua450 MHz

AMBIENT TEMPERATURE (TAl- 25·C

0

'----'

GENERATOR

~£

-~ ~'t..

i:~+20

IO-dB
PAD

i'"W

ig

,.\0".-

~~tIO

15m
~~
58

0

~i

0"

-10

,.c;E-'~~
-.I()\.~
EI"

rflC'"

~~~

~

10

20

COLLECTOR CURRENTUC)-mA

Fig. 6- Typical output power level (with 1 dB of

92CS-19743

gain compression) vs. collector current.

In General Radio type 1607·P44 transistor mount,
or equivalent.

COLLECTOR-TO-EMITTER VOLTAGE (VeE'-IOV
TERMINATIONS: son
AMBIENT TEMPERATURE ITAI_2S D C

U

VBS adjusted for

Ie = 1.5 rnA.

Fig.9-Block diagram of test setup for measurement
of power gain and noise figure.

Fig.l- Typical forward and reverse transfer coefficients.

278

File No. 574 _ _ _ _ _ _ _ _ _ _ _ _ _ _....,...._ _ _ _ _ _ _ _ _ _ _ _ _ 40915

Fig. 10- Typical output reflection coefficient.

92CS-19744

Cl:
C2,C3:
C4,C5:
C6:

1.0-30pF
1.0-20 pF
O.04IJ.F
1-10 pF

L,: 2 turns NO.1a wire, 3116 in. 10.188 mml
10,0.10 in. 12.54 mmllong
L2: 3 turns No. 18 wire, 3/16 in. 10.188 mm)

ID,O.15 in. 13.81 mmllong
L3,L4: 0.22-IJ.H rf choke
LS: 3 turns No. 18 wire, 3/16 in. 10.188 mml
ID,O.15 in. 13.81 mmllong

*

V BB adjusted for

Ie = 1.5 rnA

Fig. 1 '-Circuit diagram of 450·MHz amplifier
(unneutraJizedJ used for measurement
of power gain and noise figure.

TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base

Lead 3 - Collector
Lead 4 - Case

279

File No. 550

[Rl(]3LJD

RF Power Transistors

Solid State
Division

40934
High- Power Silicon N-P-N
VHF/ UHF Transistor
12.5-Volt Type For Class C Amplifier Applications
Features:

RCA HF·31 Package
("Stud less TO·216 AA")

•
•
•
•
•

Low·inductance radial leads - particularly useful for stripline circuits
Hermetically sealed ceramic·metal package
Electrically isolated mounting surface
2-watt minimum output at 470 MHz
7-dB gain at 470 MHz

RCA-40934' is an epitaxial silicon n·p·n planar transistor
that features overlay emitter·electrode construction and
a hermetic ceram ic·metal package with leads isolated. from
the mounting surface. This rugged, low·inductance, radial·
lead device is designed for stripline as well as lumped·
constant circuits.

COLLECTOR SUPPLY VOLTAGE (Vee) = '2.5 V
CASE TEMPERAlURE (Te) " 25° C
6.0

~

5.0

~

4.0

·Formerly RCA Dev. No. TA7941.

~

§

3.0
2.0

1.0

Type 40934 is electrically identical to the RCA-2N5914,
but employs a "studless TO-216M" package.

400

lOO

600

800

FREQUENCY (f) - MH!
92LS-3034R2

Fig. 1- Typical output power vs. frequency.
MAXIMUM RATINGS.Absolute-Maximum Values:
COLLECTOR·TO·BASE BREAKOOWN VOLTAGE • . • • • • . • • • • . . . . • . . • • . . . • • .
COLLECTOR·TO-EMITTER BREAKDOWN VOLTAGE:
With base connected to emitter . . . • . . . . . • . • . • . • . . • • • . • ' . • • . . • . . . . '. . .
With base open ••••••••••••••••••••••••••••••••••••••••••••••

EMITTER·TO·BASE VOLTAGE • • . . . • . • • • . . • . . • . . • . • • • . . . • • • • . • . . • • • .
COLLECTOR CURRENT:

Continuous . . . . • . . . • • • . . . • • . • . • . . . . . ', . • . . . . . . . . . . . . . . . . . . • .
TRANSISTOR DISSIPATION:

At case temperatures up to
. . . . . •. . . . . . . . . . . . . . •. . . . •. . . •• . . •.
At case temperatures above 750 C, derate linearly at . • • . . . . . . • • . . • . . . . . . . . . .
TEMPERATURE RANGE:
gW~~~ & Operating (Junction) . . . . . . . . . . . . • . . . . • . . . . . . • . . . . . . . . . . .
750 C

CASE TEMPERATURE (During ;;;;!:!~ringl:
For 10 s max. . . . . . . . . . . • • . • . . . . • .

280

~

...........•...•.•....•..

V(BR)CBO

:is

V

VIBRICES
V(BRICEO
VEBO
IC

36
14
·3.5

V
V
V

0.5

A

5.7
0.0456

WloC

PT
W

-65 to
+2000C
230

DC

6-72

File No. 550

40934

= 25°C

ELECTRICAL CHARACTERISTICS, at Case Temperature (TCi
STATIC

CHARACTERISTIC

TEST CONDITIONS
DC
DC
DC
COLLECTOR
BASE
CURRENT
VOLTAGE VOLTAGE
(mAl
(VI
(VI

SYMBOL

VCE
Collector-Cutoff Current

IE

VBE

MIN.

0.5

UNITS

MAX.
0.3

-

0

V(BRICBO

Voltage

IC

0

Collector-te-Base
~reakdown

IB

10

ICEO

LIMITS

rnA

36

-

V

V

Collector-te-Emitter
Breakdown Voltage:

With base open

0

V(BRICEO

With base connected

0

V(BRICES

to emitter
Emitter-ta-Base

0.5

V(BRIEBO

Breakdown Voltage

apulsed through a 25-mH inductor; duty factor

25"

14

-

25"

36

-

0

3.5

-

V

= 50%

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC
Power Output

Supply (Vccl-V

Collector Efficiency

'1c
LM

Load Mismatch (Fig. 8)

(PIEI-W
0.4
0.4
0.4

12.5
12.5
12.5
12.5

POE
GpE

Power Gain

Input
Power

DC Collector

SYMBOL

0.4

LIMITS

Frequency
(f)-MHz
470
470
470
470.

UNITS
MIN.
2.0
7
65

TYP.
W
dB
%

-

Opetl Cljcuit
through short
circuit

Collector-ta-Base Capacitance

12

Cobo

Gain-Bandwidth Product

1

IC=O
12
IC = 200 rnA

t,-

-

15
(max.)

-

900

pF
MHz

t;)'1

FREQUENCY (I) -47DMHz

COLLECTOR SUPPLY VOLTAGE (VCc)-12.5 V
CASE TEMPERATURE ITC) =25°C

IIJ

~

6

.,~

5

~

~i4

.,~
o

o

0.2

0.4

0.6

0.8

INPUT POWER(P1E)-W

o
'00

92lS-3038R2

Fig. 2- Typical output power vs. input power at 470 MHz for
40934 in circuit shown in Fig. 7.

200

300

400

500

FREQUENCY If l-MHz
92CS-20003

Fig. 3-Large·signal parallel equivalent input resistance
vs. frequency.

281

40934

File No. 550
COLLECTOR SUPPLY VOLTAGE IYcc).r2.~ v
CASE TEMPERATURE {TC)-2S·C

OLLECTOR SUPPLY VOLTAGE (Veel-I2.5 v
ASE TEMPERATURE tTC)-2!5·C

6

lLI10

~

JC;

§-:

g

.........

24

n

;-50

~ ~

a.. -75
100

..

200

300
FREQUENCY

,n-

400

.00

18

.00

300

200

'DO

F~EQUENCY

MHz

'DO

{f)-MHI.

92CS-20004

Fig. 4-Large·signal parallel equivalent input capacitance vs.
frequency.

92SS-4498RI

Fig. 5-Large-signal parallel equivalent ·output resistance
vs. frequency.
VCC~12.5V

COLLECTOR SUPPLY VOLTAGE (Vee)-12,' v

~C5

CASE TEMPERATURE CTC )=25·C

Z

:!

60

if~ .0

~

L3

CI

40

0 ..
ZG~50Jl

C2

200

500

300
400
FREQUENCY III-MHZ

92CS-200015

Fig. 6-Large-signal parallel equivalent output capacitance
vs. frequency.

L4

C7

C3

0.9-7.0 pF, ARCO 400 or equivalent
1.5-2.0 pF, AReO 402 or equivalent
1000 pF, feedthrough
0.1 IJF. ceramic
2-18 pF, Amperex HT10MA/218 or equivalent, connected between the base and emitter with the shortest
possible leads.
1 turn No.16 wir., 3/16 in. (4.78 mm) 1.0" 1/8 in. (3.18
mm) long

470-MHz

DRIVER

1 turn No.20 wire. 3/16 in.(4.78 mmlI.O.,IIB in. (3.18
mm) long
Ferrite choke, 450n impedance; Ferroxcube
VK·200.()9-3B or equivalent

470-MHz

AMPLIFIER
(FIG.1)

Fig. 7-470-MHz. amplifier test circuit fo; measurement of
output power, gain, and load-mismatch capability.

TERMINAL CONNECTIONS
STUB92CS-19792

The transistor must withstand any mismatch in load; the load
can be varied from open circuit to short circuit by adjustment
of the tuning stub through "a half wavelength. (The dissipation
rating of the transistor should not be exceeded during the
test.)
Fig. 8- Test set-up for checking load-mismatch capability of
40934.

282

Terminal No.1, 3 - Emitter
Terminal No.2 - Base
Terminal No.4 - Collector
WARNING: The ceramic heat-sink portion of this device
contains berylium oxide. 00 not crush, grind, or abrade
this portion because the dust resulting from such action
may be hazardous if inhaled. Disposal should be by
burial.

File No. 551

DDJ:n3L}O

RF Power Transistors

Solid State
Division

40936
2O-W (PEP) Emitter-Ballasted
Overlay Transistor
For 2· to·3D·MHz Single·Sideband
Linear Amplifier Applications

Features:
• For class A or class B amplifier service
• Integral emitter·ballasting resistors
• 20 W(PEPI output (min.) at 30 MHz with:
gain = 13 dB (min.); collector efficiency = 40% (min.);
intermodulation distortion = -30 dB (max.)

JEDECT0-60

H-1307

" Low·Thermal·Resistance Package
RCA - 40936' is an epitaxial silicon n-p·n planar transistor
with overlay emitter-electrode construction. It is designed
especially for use in linear amplifiers to provide high power
in class A or class B service. This device is intended for
2·to-30-MHz singl .... ideband power amplifiers operating from
28-volt power supplies.

The inherent.high·frequency capability of the overlay struc·
ture, together with individually ballasted emitter sites, makes
it possible to forward-bias the device into the active region
without incurring thermal instability.
'Formerlv RCA Dev. No. TA8236.

MAXIMUM RATINGS, Absolure-Maximum Values:

v

COLLECTOR SUPPLY VOLTAGE ('te). 28
FRECUENCIES(TWO-TONE) -30 MHz. 30.001 MHz

COLLECTOR-TO-EMITTER VOLTAGE:
With VBE • -1.6 V •.•••.•.•••••••••••

65

V

~

VCER

40

V

.:::: -10

VEBO

4

V

With external base-to-emitter resistance
RBE· 511 ..•.••..•••.•••..••...•...
EMITTER·TO·BASE VOLTAGE

~

-20 mA

ii
t;

~.20

COLLECTOR CURRENT:
Peak ............................. .

Continuous ........................ .

IC

TRANSISTOR DISSIPATION ••••••••••.•••
At case temperatures up to 75 0 C
At case temperatures above 750 C

PT

TEMPERATURE RANGE:
Storage & Operating (Junction)

0~~~~~:P:~~~~~T~~:;:~

VCEV

10

A

3.3

A

50
W
Derate linearly
at 0.4 Wfc.
-65

to 200 DC

<;

2i ·30

~~-40

3.D

DER

ISTO

1

PRODO

~ -50
2.5

25

10
15
20
OUTPUT POWER (POE) - W (PEP)
92CS·I!)170

LEAD TEMPE RATURE (During soldering):
At di...nces ~ 1/32 In. (0.787 mm) from

InaJlating wafer for 10 s max . . . . . . . •

230 DC

Fig. 1-Typical intermodulation distortion vs. output power.

11·73

283

File No. 551

40936
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 25°C

STATIC
TEST CONDITIONS

CHARACTERISTIC

DC
COLLECTOR
VOLTAGE
(V)

SYMBOL

VCB
Collector·to· Em itter
Sustaining Voltage:
With base-em itter
junction reverse biased

VCE

VBE

DC
CURRENT
(rnA)
IE

-1.5

VCEV(SUS)

With external base-to·
emitter resistance (RBE)=Sn

DC
BASE
VOLTAGE
(V)

VCER(sus)

LIMITS

UNITS

IC

MIN.

200a

65

-

V

200a

40

-

V

4

-

V

-

5.0

rnA

MAX.

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

Collector·to·Emitter
Cutoff Current

'CEO

Coliector·to·Base
Cutoff Current

ICBO

60

-

10

rnA

Coliector·to·Base Capacitance
(f= 1 MHz)

Cobo

30

-

85

pF

Thermal Resistance
(Junction·to-Case)

ROJC

-

2.5

°C/W

20
30

apulsed through an inductor (25 mH); duty factor'" 50%.

DYNAMIC (30-MHz Single-Sideband Amplifier)
TEST CONDITIONS

CHARACTERISTIC

DC
COLLECTOR
SUPPLY
SYMBOL
VOLTAGE
(V)
VCC

RF Input Power:
Average

OUTPUT
POWER
W(PEP)

FREQUENCY
(MHz)

DC
CURRENT
(rnA)

POE

f

IC

LIMITS

MIN.

MAX.

PIE

28

10

30

20

P,E

28

20

30

20

-

Power Gain

GpE

28

20

30

20

13

Collector Efficiency

'IC

28

20

30

20

40

-

Intermodulation Distortion *

IMD

28

20

30

20

-

-30

Peak envelope (PEP)

*Referenced to either of the two tones, and without the use of feedback to enhance linearity.

284

UNITS

0.5
1.0

W
W
dB /

%
dB

40936
L 1:
L2:
L3:

3 turns No. 12 wire, 1/4 in. (6.35 mmJ
1.0.• 1/2 in. (12.7 mm) long
6 turns No. 14 wire, 3/8 in. (9.53 mm)
1.0 .• 314 in. (19.05 mm) long
5 turns No. 10 wire. 3/4 in. (19.05 mm)
1.0.• 314 in. (19.05 mm) long

C 1:
C2:
C3 :
C4 :

140-680' pF, Area 468, or equivalent
170-780 pF, Area 469, or equivalent
0.05 pF. ceramic
0.1 iJ.F. ceramic
C5 :
1000 pF. feed through
C6 : 24-200 pF. Area 425, or equivalent
C7 : 32-250 pF, Area 426, or equivalent
R 1 : 20n.1 W
R2 : 300n.5W
RFC: 350D,Ferrite choke, Ferroxcube* No. 01·038, or equivalent

92LS-1878R2

-Ferroxcube Corp. of America, Saugerties, N,Y.
NOTES:
1. Vae adjusted for a quiescent collector current of 20 rnA.

2. Impedances measured at socket terminals.

Fig. 2-30·MHz linear amplifier test circuit used for measurement of dynamic characteristics.
10 CASE TE,MPERATURE (Tel "IOODC

i

6

I

4-- Ie

MAX.

NOTE'TJS IS DET'REAfRMINED
BY
USE OF INFRARED

l'\.

~

1

TECHNIQUE

V,OT -SPOT TEMPERATURE

2

,,\TJSI =2000C

!6~---+----+--+-4-+----+-~-4--+-~4
"'
4~--~-----+--+-+-+---~~-+-+--+-~~
2~--~-----+--+-+-+---~~-+-+--+-~~
0.1
4

6

8

10

230

4 6 8 100

1

COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V
92CS-22851

Fig. 3-Maximum operating area for forward·bias operation.

OUTPUT POWER (POE) - W (PEP)
92LS-1880R2

Fig. 4- Typical col/ector efficiency vs. output power.

m

"
~
30

i;i
20

~-40

~

ffi

10 ~

140

CASE TEMPERATURE

- °C
92CS-19771

Fig. 5- Typical output power and intermodulation distortion
vs. case temperature;

Fig. 6- Typical output power vs. col/ector supply voltage.

285

40936

File No. 551

1000

•

COLLECTOR SUPPLY VOLTAGE (Veel- 28V
CASE TEMPERATURE (TC):2S-C

4

..,

E

~
I-

ffi

•
••

/

100

4

~ •

g
"

10

8

4

~

II

••
•

/

1.0

0.3

0.4

0,5

0.6

0.7

0.8

0.9

10

1.0

15

20

25

30

35

40

COLLEC"roR-TO-SASE YOLTAGE IVce)-V

BASE-TO-EMITTER VOLTAGE (VSE)-V

92C$-19TT3
92L.S-2IS3RI

Fig. 7- Typical transfer characteristic.

Fig. 8- Variation of output capacitance with collector-tobase voltage.

TERMINAL CONNECTIONS
Case, Mounting Stud,

Pin No.1 - Emitter
Pin No.2 - 8ase

Pin No.3 - Collector

WARNING: The ceramic body of this device contains
.beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

286

File No. 553

OOcn5LJD

RF Power Transistors

Solid State
Division

40940
5-W,400-MHz Silicon N-P-N
Overlay Transistor
For VHF/UHF High-Power Amplifiers

Features:

JEDEC TO·216AA

•
•
•
•

5 W output at 400 MHz with 5.2 dB power gain
7.5 W output at 100 MHz with 8.7 dB power gain
Low·inductance, ceramic-metal, hermetic package
All electrodes isolated from the stud

RCA type 40940* is an epitaxial silicon n·p·n planar tran·
sistor with "overlay" emitter·electrode construction. In the
overlay structure, a number of individual emitter sites are
connected in parallel and used in conjunction with a single
base and co lIector region. This arrangement provides a sub·
stantial increase in emitter periphery for higher current or
power, and a corresponding decrease in eminer or collector
areas for lower input and output capacitances. The overlay
structure thus offers greater power output, gain, efficiency,
and frequency capability.

TERMINAL CONNECTIONS
Tennlna" I, 3 - Emitter
Terminal 2
- SOlO
Terminal 4
- Collector

WARNING: The ceramic body of this device contains
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

'Formerly RCA Dey. No. TA7982.

MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR·TO·EMITTER VOLTAGE:
With base open ............................................... .
COLLECTOR·TO·BASE VOLTAGE ................................. .
EMITTER·TO·BASE VOLTAGE .................................... .
COLLECTOR CURRENT:
Continuous ..........................................•........
Peak ....................•.........•..........................
TRANSISTOR DISSIPATION:
At case temperatures up to 75°C .......................•........ ;.
At case temperatures above 75°C, derate linearly at ................... .
TEMPERATURE RANGE:
Storage & Operating (Junction) ................................... .
CASE TEMPERATURE (During Soldering):
For 10 s max .................................................. .

12-71

40
65
4

V

1.5
0.5

A
A

8.33
0.067

V
V

W
W/"C

-65 to +200

°c

230

°c

287

File No. 553

40940
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tcl

=2SOC

STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

C9llector-to-Emitter Cutoff Current:
With base open

I CEO

Collector-ta-Emitter Saturation
Voltage

VCE(satl

CollectoNo-Emitter Breakdown Voltage:
With base connected to emitter

V(BR)CES

With base open

DC
COLLECTOR
VOLTAGE·V

DC
BASE
VOLTAGE·V

V CE

V BE

DC

CURRENT
mA
IE

IB

MIN.

0.1

1

V

mA

-

200"

65

200"

40

-

V

a

a

4

-

V

15

·C/W

Thermal Resistance:
(Junction-to-Case)

-

500

0.1

V(BR)EBO

MAX.

100

a

V(BR)CEO

Emitter-ta-Base Breakdown Voltage

IC

0

30

UNITS

LIMITS

-

ROJC

~Pulsed through a 25-mH inductor; duty factor"" 50%.

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC COLLECTOR
SUPPLY
(VCC)·V

INPUT
POWER
(PIE)·W

28

1.5

28

1

Output Power (See Fig. 11)
POE
(See Fig. 9)

OUTPUT
POWER
(POE)·W

FREQUENCY
(f)-MHz

LIMITS

UNITS

MIN.

MAX.

400

5

-

W

100

7.5

400

5.2

-

dB

Power Gain

GpE

28

Collector Efficiency

~C

28

400

50

-

%

Collector-to-Base
Capacitance

Cobo

30 (V CB )

1

-

11

pF

5

TYPICAL APPLICATION INFORMATION
CIRCUIT
4DO-MHz Narrowband Amplifier

(See Fig. 10)
1CO-MHz Narroyvband Amplifier

(See Fig. 9)

288

COLLECTOR SUPPLY
VOLTAGE (VCC)·V

OUTPUT POWER
(POE)'W

INPUT POWER
(PIE)'W

COLLECTOR EFFICIENCY

28

5

1.5

60

28

7.5

1

70

(~C)·%

File No. 553 - - - - - - - - - - - - - - . . . . . . , - - - - - - - - - - - - - 40940
COLLECTOR SUPPLY VOLTAGE (VCC)-28 V
CASE TEMPERATURE 'Tc)·2~·C

--

10

•

..
!..
-....
..

-

~

---

6

0

4

R,)

COLLECTOR SUPPLY VOLTAGE (Vcc)=28 v
CASE TEMPERATURE (Tel" 25° C
~

I.~

r--

r-I-

;tsoo

-(.!!tU r PalteR
~
-";1"'!~I·o.~

r-.

~

I-

~ 600
I

i--

t'-.....

~ 400

,

~

r---r--r-.

~

~ 300

2

~

~

~

I-

I

:>

~

0

200
300

200

100
FREQUENCY

400

o

200

150

250

COLLECTOR CURRENT tIc I-rnA

Fig. 1-0utput power vs. frequency_ 92CS-I257IRZ

300

92CS-12569R2

Fig. 2-Gain-bandwidth product vs. collector current.

FREQUENCY Ul=IMHz

COLLECTOR-SUPPLY VOLTAGE (Vee) =28 v

CASE TEMPERATURE ITc):o25DC

CASE TEMPERATURE (Tcl:25°C

,.

100

50

(O-MHz

eo

f

70 ~

10

.!.

.g

"0

>

u

6015
u

~

it

!(

>;

50 ~

POE

§

~

4

40

~

8
30

0.5

10

1.5

20

30

40

50

60

70

COLLECTOR-TO-BASE VOLTAGE (Vca)-V

INPUT POWER IPIEI-W

92CS-19786

92CS-19165

Fig. 3- Typical output power and collector efficiency vs.
input power.
COLlECTOR-TO-EMITTER VOLTAGE (Vccl"28 V
CASE TEMPERATURE ITc)=25° C

Fig. 4-Collector·to-basecapacitance vs. collector-to·base volt·
age.
COLLECTOR SUPPLY VOLTAGE (Vec)'" 28 v
CASE TEMPERATURE (Tcl. 25°C

I.

i

400

14

g,q
~I

",

:::::- ......
100

........

-

~:'f!12

...oollI-

~

10

~
a
40

.00

100
FREQUENCY (f)-MHz

a.

I'

~

-;:::;

~
..po-

~~~c
............ ~oLLEeToR cut't'~~/

I

• , • ••
40

7

100
2
FREQUENCY 1'1- MHz

500
92CS-12573R2

9ZC5-12S74R2

Fig. 5-Parallel output resistance vs. frequency.

Fig. 6-Series input resistance vs. frequency.

289

i

File No. 553

40940
COLLECTOR SUPPLY VOLTAGE IVCC)-28 V

COLLECTOR SUPPLY VOLTAGE (VCcl"28 V

CASE TEMPERATURE ITC)-Z5- C

CASE TEMPERATURE (Tel

25

20

=25°C

15

~

'"

u

z

~~ I~

t!z

I.

.~

""~

~I
8--;,

7'ollcu

5~ 10

~

12.5

ir ..
~I
0_

i

IfItENT(I~).DO mA

0
40

•

.

100

FREQUENCY t 0 - MHz

'\.c'.~~ ~
RCURR~0~

5

ilz.s

~
~
;::

.

::11

co~~EC'~~~
,00

0

~

-

-2.5
-5
4

500

I

.,~/ ~

7.5

"H

250

0

•

V

10

100
FREQuENCY t f 1- MHz

500
92CS-12572RZ

9ZCS-l2516R2

Fig. 8-Series input reactance vs. frequency.

Fig. 7-Parallel output capacitance vs. frequency.

0.5

112.71 L

1.61

-j

y-L'-(40.89)

IT

+YCC- 2BV

INPUT STRIP

3.375

92CS-I97B7

(85.61

~ ~~l
C1, C2, C3 : 2·18 pF. Amperex HTlOMAl21S,or equivalent

c4 • C5 :

C1, C2' C3, C4: 7·100 pF
Cs : 0.005 ",F disc ceramic
C6 : 1000pF
C7: 0.01 pF disc ceramic
L1 : 2 turns No. 16 wir., 0.375 in. (9.5 mm) ID, 0.75 in.
L 2 , L3:

L4 :

R1:

119.05 mm) long
1.5 "H
7 turns No. 16 wir., 0.375 in. (9.5 mm) ID,I in.
(25.4 mm) long
1000 11

Fig. 9-100-MHz amplifier test circuit for measurement of
power output.

290

1 "F electrolytic

C6 : 1000 pF, ATC-l00, or equivalent
R1 : 5.1 11. % W carbon
RFC: 0.12"H
NOTES:
1. Dimensions in parentheses are in millimeters and are derived
from the basic inch dimensions as indicated.
2. Produced by removing upper layer of double·clad, Teflon board,
Budd Co. Polychem Div. Grade lOST, 1 OZ, 1132 in. (0.79 mm)
thick, (e = 2.6), or equivalent.

Fig. 1~MHz amplifier test circuit for measurement of
power output.

File No. 554

OO([8LJ1]

RF Power Transistors

Solid State
Division

40941

Silicon N-P-N Overlay Transistor
High-Gain Driver for VHF/UHF Applications
in Military and Industrial Communications Equipment

Y2.;;,

\3~--'

Features:
• High power
1 W output
1 W output
1 W output
1 W output

\-:.::-

gain, unneutralized class C amplifier:
at 400 MHz (10 dB gain)
at 250 MHz (15 dB gain)
at 175 MHz (17 dB gain)
at 100 MHz (20 dB gain)

• Low output capacitance
RCA HF-31

H-1676

Cobo = 4 pF max.

RCA-40941' is an expitaxial silicon n-p-n planar transistor
employing an advanced version of the RCA-developed "overlay" emitter-electrode design. This electrode consists of many
'isolated emitter sites connected together through the use of a
diffused-grid structure and a metal overlay which is deposited
on a silicon oxide insulating layer by means of a photoetching technique. This overlay design provides a very high

emitter periphery-to-emitter area ratio resulting in low
output capacitance, high rf current handling capability, and
substantially higher power gain.
The 40941 is intended for class-A, -B, or -C amplifier,
frequency·multiplier, or oscillator circuits: it may be used in
output, driver, or pre-driver stages in vhf and uhf equipment.
·Formerly RCA Oev. No, TA7680.

MAXIMUM RATINGS, Absolute Maximum Values:
COLLECTOR-TO-BASE VOLTAGE

...

COLLECTOR-TO-EMITTER VOLTAGE:
With base open
With external base-ta·emitter
resistance (RBE) = 10 n

VCBO

55

V

VCEO

30

V

VCER

55

V

EMITTER·TO-BASE VOLTAGE

VEBO

3.5

V

COLLECTOR CURRENT:
Continuous . . . . . . . . . .

IC
0.4

A

TRANSISTOR DISSIPATION:
At case temperatures up to 75°C
At case temperatures above 75°C,

~

5

w

0.04

wtc

-65 to +200

°c

230

°c

derate linearly at

..... .

TEMPERATURE RANGE:
Storage & Operating (Junction)
CASE TEMPERATURE
(During soldering):
For 10 s max

12-71

291

40941

File No. 554

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C unless otherwise specified.
STATIC

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Coliector·Cutoff Current:
With base·emitter junction reverse·biased
At TC = 200°C
With base open
Coliector·to·Base Breakdown Voltage
Coliector·to·Emitter Breakdown Voltage:
With base open
With external base·to·emitter resistance
(RBE) = 10n
Emitter·to·Base Breakdown Voltage
Emitter·Cutoff Current
Coliector·to·Emitter Saturation Voltage
DC Forward·Current
Transfer Ratio
Thermal Resistance:
(Junction-to-Case)

DC
Voltage
(V)

ICEX
ICEO

DC
Current
(mA)

VCE

VEB

55
30
28

1.5

IE

IB

IC

pA

55

-

V

5

30
55

-

V

5
0

3.5

-

-

-

0.1
1.0

5
10

200

-

22

0.1
0

V(BR)CEO
V(BR)CER

0

V(BR)EBO
lEBO
VCE(sat)

3.5

0.1
20
5
5

Min. Max.

0.1
0.1
20

0
0

UNITS

-

1.5

V(BR)CBO

hFE

LIMITS

100
360
50

ROJC

mA

V
mA
V

°CIW

DYNAMIC

TEST & CONDITIONS
Power Output (VCC = 28 V):
PIE = 0.1 W (See Fig. 21
Large·Signal Common·Emitter Power Gain (VCC = 2B V):
PIE=O.lW
Collector Efficiencv (VCC = 28 VI:
PIE = 0.1 W, POE = 1 W, Source Impedance = 50 n
Magnitude of Common-Emitter, Small Signal, Short-Circuit
Forward·Current Transfer Ratio
Ic=50mA,VCE=15V
Common·Base Output Capacitance (V CB = 28 VI

292

SYMBOL

LIMITS
FREQUENCY
UNITS
MHZ
MINIMUM MAXIMUM

POE

400

1.0

-

W

GpE

400

10

-

dB

llC

400

45

-

%

hfe

200

2.5

-

-

4

Cobo

1

pF

40941

File No. 554
PERFORMANCE DATA
COLLECTOR SUPPLY VOLTAGEIVee)- 28V
CASE TEMPERATURE lTC)-25-C

9ZCS-19814

VEE --28 V

100

200

600

400

FREQUENCY (f)-MHz

800

L,:

'2CS~1314fiR2

2 tUtM No. 18 wi.... 0.26 In. (8.35 mml 10. 0.125 In.
f3.17mml long
Ferm. t1 choU. 1 tum, Z - 450 n
RF dIoke, Q 1 ,.H
2-1/2 turM. No. 18 wtnI, 0.25 In. (11.36 mmIID,O.187In.
1,,7Imm) long

L2:
L;J. 4:

Fig. 1-Power output lIS. frequency.

Ls:

R,:

.

,coo

~

v:

I

~
...

""g
g:

:;"

I

is

,aaa.

/A ~caLL£CTaR~~

...;:::::::~

'''''e.~

~

•

..

18

....,~

..o~~

E

'1

10'"

~
...

....~r.. i -

..

400

.

2

i

L 1

~~~
.~..

illa:

..a...

C

~

a

20
40
60
80
COLLECTOR CURRENT UC)-mA

•
•

CASE TEWPEfiATURE

CTC' . loo·e

Ie MAX •

~

2

z

z

~z

un.1W

Fig. 2-RF amplifier circuit for power output test (40()'MHz
operation).

CASE TEMPERATURE (TC).2S-C

'00

t2Cs-lalSI

::l
8

100

•-NOTE: TJS 's DETERM'NED BY

If-

V

USE OF INFRARED
. SCANNING TECHNIQUE

•

Vc~a

2

'0

Fig. 3-Gain-bsndwidth product v£ collector current

HOT SPOT TEMPERATURE

~.2a7

2

.•

8 10

2'

FREQUENCY m a , MHz
CASE TEMPERATURE (Tcl-Z5-C

~

• • •100

COLLECTOR-TO-EMITTER VOLTAGE (VeE'-V

92CS-ll&11

Fig. 4-Safe area for dc operation.

r•
J.
\

MAt

COLLECTOR SUPPLY VOLTAGE (Vccl·15Y
CASE TEMPERATURE (Tel· 2S·C

u

z

5If • \.

:l

!

4

~

§...
."

2

a

'-.....

--10

COLLECTOR-lO-BASE VOLTAGE

ZO

30

(Vea'-V
t2Cs-I'"Z

FIg. 5- Variation of co/lectoNo-base capacitance.

50Q

FREQUENCY ttl-MHz
92CS-131eQRI

Fig. 6- Typical series input mistance

v£

frequency.

293

40941

File No. 554
COLLECTOR-To-EMITTER VOLTAGE (VCEl-15
CASE" TEMPERATURE (Tel. 2S-C

COLLECTOR SUPPLY VOLTAGE tvCC.-I$V
CASE TEMPERATURE (TCl- 2S·C

"
I

~

![
..!:!..
~

~

;
~;E

i

v

" 5000

~

/,
12

77A

I

~"E~.J..-"'"""~f>
of- CliI,I.£CtOl ....-"~
i--41-

;;;0-

...-

-8

.... 1......50

6

.....

~::..--

\

lil

.'

4

.

~...

./ V//
/h
rJ.>~/'§
,,1 (I.e :";'--1f>./..#

8

6,-

17

i

4

100

co(

~~~o~
l

41---

~
9

60

~

of--

!;

~

\
CIJ~

..... -.::~r
~
etC)

100

,

~~

2

"0
0

500

•

•

100

•

•

FREQUENCYlf.-MHz

. FREQUENCY (f)--MHz
92CS·ISI!5IRI

Fig. 7- Typical series input reactance

vs.

frequency.

Fig. 8- Typical parallel output resistance v& frequency..

g~~fJ.;E~;.~r:~~~~l~"i;~GE
'k 18

1
0

-tI
u

"l\

14~

z

12

I

10

oJ

4

;!

K\:

"\ "-Coi(e

I"':t:-..: o~

8

I•
~

;/

~

(VeE) • 15

CIJ~~,

~ftr Ilel-

25 'mA
100

2
0
50

6

•

100

•

4

500

FREQUENCY ")o-MHz
9ZCS-1315!5R1

Fig. 9- Typical parallel output capacitance 1/1. frequency.

TERMINAL CONNECTIONS
Terminals I, 3-Emitter
Terminal 2 -Base
Terminal 4 -Collector

WARNING: The ceramic body of this device _ _ ns
beryllium oxide. Do not crush, grind, or .•brelle these
portions bocause the dust ....ulting from such Iction ...y
be he2ltC10U1 if inhaled. Dispaal should be by burili.

294

500

File No. 579

[R1(]5LJ1]

RF Power Transistors

Solid State
Division

40953 40954 40955
1.75-, 10-, and 25-W, 156-MHz
Silicon N- P-N Overlay Transistors
For High-Power VHF Amplifiers

'-,RC~
T
I !
i ,

Features

i

• Designed for vhf marine transmitters
40953
JEDEC TO-39

40954
40955
RCA HF-44

a 25 W (min.) output at 156 MHz (12.5·V supply)
.. Infinite VSWR,load-tested at constant input power,
f = 156 MHz, Vee = 15.5 V (40955)

RCA-40953. 40954, and 40955* are epitaxial silicon n-p-n
planar transistors of the overlay emitter electrode construction. They are intended for high-power-output, vhf,
class-C amplifier service in low-voltage-supply applications.

FREQUENCY

f

R

156 MHz

POWER INPUT (PIE''''O.IW
CASE TEMPERATURE tTc) =25 D C

'"I

35

W

These devices are espeCially intended for use in vhf marine
transmitters operating from a 12.5-volt supply. The 40954
and 40955 are emitter-ballasted, and all'40955 units are
tested at constant input power (f = 156 MHz, VCC = 15.5 V,
infinite load VSWR).
* Types 40954 and 40955 are the former RCA Dev. Nos. TA8559
and TA8561, respectively.

..0

."i5

>>-

30

'"

i

25

12.5
13.5
14.5
COLLECTOR SUPPLY VOLTAGE {Vccl-V

Fig.l-Power output vs. supply voltage for
amplifier shown in Fig. 6.

MAXIMUM RATI NGS, Absolute Maximum Values:
40954

40955

36
14
3.5
0.33

36
14
3.5
4.5

36
14
3.5
5

V
V
V
A

3.5
0.028

25
0.2

35.7
0.286

W
W;"C

40953
COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE:
With base shorted to emitter . . . . • . . . . . . . . . . . . . . • . . . V(BR)CES
With base open . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CEO
EMITTER-TO-BASE VOLTAGE . . . . . . . . . . . . . . . . . . . . . .
VEBO
CONTINUOUS COLLECTOR CURRENT . . . . . . . . . . . . . . . .
IC
TRANSISTOR DISSIPATION:
PT
At case temperatures up to 75°C . . . . . . . . . . . . . . . . . . . .
At case temperatures above 75°C, derate linearly ........ .
TEMPERATURE RANGE:
Storage and operating (Junction) . . . . . . . . . . . . . . . . • . . .
LEAD TEMPERATURE (During soldering):
At distances~ 1/32 in. (0.8 mm) from seating plane for
10 s max. . . . . . . . . . . . . . . . . . . . . . . _ . __ ........ .

11-72

-65 to +200 - -

°c

230---

°c

295

40953,40954,40955

File, No.

579

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 250 C
STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC
Voltage
V
VCE VEB

Coliector·Cutoff Current:
Base connected to emitter
Collector·to·Emitter
Breakdown Voltage:
With base open

IE

12.5

ICES

to emitter
Emitter·to·Base Breakdown
Voltage

0

40954

MIN. MAX. MIN. MAX.

40955

1

-

10

-

10

25a
200
25 a
200

14

-

-

-

-

14

14

-

-

36

0
0

3.5

-

-

-

36

-

-

ROJC

35.7

3.5

-

3.5

-

5

-

-

UNITS

MIN. MAX.

-

0.5
5

V(BR)EBO

Thermal Resistance:
(Junction·to·Case)

IC

IB

0
0

V(BR)CES

40953

0

V(BR)CEO

With base connected

LIMITS

DC
Current
mA

36

3.5

rnA

V

V

°C/W

a Pulsed through a 25-mH inductor; duty factor"" 50%.

DYNAMIC
DC COLLECTOR
FREQUENCY
TEST & CONDITIONS SYMBOL SUPPLY VOLTAGE
40953
(f)·MHz
(VCC) -V
MIN. MAX.
Power Output:
PI E = 0.1 W (40953)
1.75 W (40954)
9W (40955)
Large,Signal Common·
Emitter Power Gain:
POE=I.75 W (40953)
lOW (40954)
25W (40955)
Collector Efficiency:
POE= 1.75W (40953)
lOW (40954)
25W (40955)
Coliector·to·Base
Output Capacitance

LIMITS
40954

UNITS

POE

12.5

156

1.75

-

10

-

25

-

W

GPE

12.5

156

12.4

-

7.6

-

4.5

-

dB

'IC

12.5

156

50

-

60

-

60

-

%

12.5 (VCB)

1

-

15

-

30

-

80

pF

Cobo

Type 40953

Types 40954 and 40955

TERMINAL CONNECTIO'NS

TERMINAL CONNECTIONS

LEAD 1 - EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR, CASE

LEADS 1 & 3 - EMITTER
LEAD 2- BASE
LEAD 4 - COLLECTOR

WARNING: The body of types 40954 and 40955 contains
beryllium oxide. Do not crush, grind, or abrade that portion
because the dust resulting from such action may be
hazardous if inhaled. Disposal should be by burial.

296

40955

MIN. MAX. MIN. MAX.

File No. 579

40953,40954,40955

FREQUENCY (f)"156MHz
POWER INPUT (PIEIRQ.IW
CASE TEMPERATURE (TC'''2SoC
14
;0

~g:
12

~

'""'
~

10

12.5
13.5
14.5
COLLECTOR SUPPLY VOLTAGE 1VCC)-V
92CS-20111

POWER INPUT (P1E)-W
92CS-20109

Fig.2-Power output vs. supply voltage for

Fig.3- Typical power output

amplifier shown in Fig. 1.

VS.

power input

at 156 MHz for type 40955 in circuit

shown in Fig. 9.
FREQUENCY (f)" 156 MHz
CASE TEMPERATURE ITe )"25·C
14

'"

~
,p

13
12

o=>

"

'""'
'"

10

~

8
I

2
POWER INPUT (PIEI-Yf

FigA- Typical power output

VS.

10
II
12
13
14
9
COLLECTOR-TO-EMITTER VOLTAGE IVCE)-V
92CS-20112

92CS-20113

power input

Fig.5-Typical power output vs. supply volt·

at 156 MHz for type 40954 in circuit
shown in Fig. 9.

age at 156 MHz for type 40953 in
Vee

circuit shown in Fig. 8.

12.5 V

Cl 2: 18 pF silver mica
0.02 ~F disc ceramic
0.001 ~F feedthrough
10 pF silver mica
100 pF silver mica
14-150 pF, ARCa 424, or equivalent
120 pF silver !'lica
7-100pF. ARCO 423. or equivalent
12n, 1/4 W

C3, 9, ; 2:
'4,10,14:
C5:
C6:
C7, 15, 16:
Ca. 13:
ClI;
R1. 3, 4:

R2:
L,:
L2:
L3:
L4:
L5,6:

20n, 1/4 W
2 turns No. 20 enameled wire 3/16 in. {4.76 mmJ 10, 1/8 in. (3.175 mmJ long
1 turn No. 28 enameled wire on Ferroxcube bead #56 590/4B
0.391JH, Nytronics Deci·Ductor, or equivalent
1 turn No. 20 enameled wire 1/8 in. (3.175 mmJ 10. 1/16 in. 11.58 mmJ long
Z = 450n, Ferroxcube VK-200·09/3B, or equivalent

T'.2 :Twisted pair of NC!. 20 enameled wire 14 turns/in.
Formed in a loop 3/8 in. 19.52 mmJ diameter, cross connected
(End of one winding connected to beginning of otherJ

Fig.6-156-MHz, 25·Wamplifier for marine equipment

297

40953,40954,40955

File No. 579

C',2: 18 pF silver mica
C3: 5 pF

C4, 7: 0.001 p.F feedthrou~
VCC .. 12•5V

Cs: 50 pF silver mica

Cs: 82 pF silver mica
Ca:
Cg:
R1:
R2:
L,:
L2:

0.002 pF ceramic
15-115 pF. AReO 406. or equivalent
39n, 1/4 W
360n, 1/4 W
2 turns No. 20 enameled wire 3/16 in. 14.76 mm) 10, 1/8 in. (3.175 mmllong
4 turns No. 1B bare tinned wire 5/32 in. 13.96 mmllD. 5/16 in. 17.93 mm)
long; tap 3·112 turns from collector
L3: 8 turns No. 18 bare tinned wire 5/32 in. (3.96 mmllO. 9/16 in. 04.28 mm)
long; tap 1 turn from

~F.

AReO 403, or equivalent

Cs: 1,000 pF feedthrough

Ca: 0.005 JlF disc ceramic
L,: 2 turns No. 16 wire. 3/16 in. 14.76 mmllO, 1/4 in. (6.35 mmllong
L2: Z:; 450 n Ferrocube VK~200-09/3B, o~ equivalent
L3: 2 turns No. 14 wire, 1/4 in. f6.35 mm) ID, 5/16 in." (7.93 mm)
3 turns No. 14 wire, 3/8 in. (9.52 mm) ID. 3/8 in. (9.52 mmllong

Ca

4:

4: RFC. Z = 4500, Ferroxcube VK-200-09/3B. or equivalent

Fig.

Cl, 2. 3, 4: 7-35

Fig.8-156~MHz

amplifier test circuit for measurement of power
output of 40953.

7-'56-MHz, to-Wamplifier for marine equipment.

TO
SUPPLY

COL~C~
TI

c.

C6

C1:
C2:
C3:
C4:
C5:

7-100 pF, AReO 423, or equivalent
4-40 pF. ARCO 422. or equivalent
0.1 J,LF ceramic
0.001 J,LF feedthrough
150 pF. ATC-l00-B~150. or equivalent
Cij: 14-150 pF. ARCO 424. or equivalent
C7: 24-200 pF. ARCO 425, or equivalent
L1: 1/2 turn No. 14 wire, 1/4 in. (6.35 mm) 10
L2: RFC. Z = 450n. Ferroxcube VK-20Q.09/3B. or equivalent
Tl: Twisted pair of No. 20 enameled wire; 14 turns/in.
Formed in a loop 3/8 in. 19.52 mml diameter. cross connected
(End of one winding connected to beginning of otherl

Fig.9-156-MHz amplifier test circuit for measurement of power
output of 40954 and 40955,

298

File No. 581

RF Power Transistors

D\lCIBLJD

40964
40965

Solid State
Division

Silicon N-P-N
Overlay Transistors
High-Gain Devices for Class C'
VHF/UHF Multiplier and Amplifier Service

Features:
JEDECTO-39

• High power gain:
6 dB (min.) up to f = 470 MHz (40964 tripler)
7 dB (min.) at f = 470 MHz (40965 amplifier)

RCA types 40964 and 40965- are epitaxial silicon n-p-n
planar transistors featuring the overlay emitter-electrode
construction. They are intended for vhf/uhf mobile and
portable transmitters where intermediate power output is
required at low supply voltage.
Type 40964 is especially useful as a frequency tripler into the
450-to-470-MHz band. The 40965 is intended for amplifier
service in this band.
_

Formerly RCA

·oev.

1.5

COLLECTOR SUPPLY VOLTAGE lVee)
CASE TEMPERATURE (T c) =25- C

It

12 V

"''"

Nos. TA7514 and TA7588, respectively.

o
DO

200

300

400

500

FREQUENCY ff) - MHz

92SS-410ORI

Fig. 1- Typical power output w. frequency for 40965.

MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE ...•.•• '.' •.•...•...•.•...•.•...•.•..••
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-to-emitter resistance
(RBE) = 33!l •..•..••...•••..••..•.••••..•.•..•........••••..••
With base open •.••..•...••.•.•••.........•.•...•••.•••.••.•....•
EMITTER-TO-BASE VOLTAGE ..••.....•.•..•..••.••••..••....•••••..••
CONTINUOUS COLLECTOR CURRENT .....•.....••.•.••...•......•....••
TRANSISTOR DISSIPATION:
At case temperatures up to 250 C
At case temperatures above 250 C
TEMPERATURE RANGE:
Storage & Operating (Junction) •...••.••..•.......••.•.•..•....•.••..•.
LEAD TEMPERATURE (During soldering):
At distances Z 1/32 in. (0.8 mm) from seating plane for 10 s max •....•..........

5-72

VCBO

36

V

VCER(sus)
VCEO(sus)
VEBO
IC

36
14
2
0.2

V
V
V
A

3.6
See Fig. 6

W

-65 to 200

oc

PT

230

DC

299

40964.40965 _ _ _ _ _ _ _ _ _ _ _ _ _-.,._ _ _ _ _ _ _ _ _ _ _ File No. 581
ELECTRICAL CHARACTERISTICS. Case Temperature (TC) = 250C
STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Voltage
Vdc
VCE

Collector·Cutoff Current

ICEO

Collector·ta-Base Breakdown Voltage

V{BR)CBO

Collector·to·Emitter Sustaining Voltage:
With base open

VCEO{SUS)

IE

IB

10

With external base·to-emitter
resistance (RBE) = 3m

VCER{SUS)

Emitter·to·Base Breakdown Voltage

V{BR)EBO

Thermal Resistance:
(Junction·to·Case)

ROJC

LIMITS

40964

Current
mAdc

Min.

Max.

-

0.1

rnA

36

-

V

68

14

-

V

5a

36

0

2

-

V

50

oC/W

IC

0
0
0

0.1

UNITS

40965

-

aPulsed through a 25-mH inductor; duty factor = 50%.
DYNAMIC
TESTCONDITIONS
CHARACTERISTIC

Power Output

Power Gain

SYMBOL

Collector
Supply (VCC) - V dc
12

0.1

8

0.1

12

0.1

POE

GPE

8

Collector Efficiency

Collector·to·Base
Capacitance
Gain·Bandwidth
Product

Input Power
{PIE)-W

0.1

12

0.1

B

0.1

'IC

Cobo

fy

VCB= 12V
IC=O

-

VCE=12V
IC= 50 rnA

-

LIMITS
Frequency
{f)-MHz
156.7-470
470
156.7-470
470
156.7-410
470

40965 UNITS
Min. Typ. Min. Typ.
0.4

0.44

-

-

- 0.5
0.33 - -

6

6.4

-

-

-

0.55

-

W

0.33

-

'

7

7.4

-

-

dB

156.7-470
470

-

5.2

-

156.7-470

25

470
156.7-470

-

-

40

-

25

-

-

-

-

40

5
ImaxJ

-

5
(max.)

pF

-

700

-

700

MHz

TERMINAL CONNECTIONS
LEAD 1 - EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR. CASE

300

40964

470
1

-

5.2

-

-

%

File No. 581

40964,40965

OUTPUT FREQUENCY (f) :470 MHz
CASE TEMPERATUREITc) = 2S"C

FREQUENCY (f);; 470 MHz
CASE TEMPERATURE (Tel;; 25"C

••0

800

~ 500

'i"

700

"'C

"',e;;

600

I

o

450

!II'"

ffi

~ 400

~ 500
I-

I-

~

"~ 350

!;
o

o
300

400
300

200

250
100

50

200

150

INPUT POWER (PIEI-mW

250

Fig. 2- Typical power output vs. power
input for 40964 in the tripler
circuit shown in Fig. 4.

C'T

50

100

92SS·410ZRI

150

200

250

INPUT POWER (P[El-mW
92SS-4104RI

Fig. 3- Typical power output n. power
input for 40965 in the amplifier
circuit shown in Fig. 5.

,

..r--t C4
C6

el. C2:
C3:
C4:
C5:
C6:
C7, C8:
L1,L2:

L4

fJ..60 pF. AReO 404, or equivalent
0.01 p.f. disc ceramic
1000 pF, feed.hrough
1.5-20 pF
0.9-7 pF. ARCO 400. or equivalen'
1.5-20 pF. ARCO 402. or equivalen.

L3:

2 turns No. 18 wire.
1/4 in_ (6.35 mmllD~
1/4 in. (6.35 mmllong
3 turns No. 18 wire,
1/4 in_ (6.35 mmllD.
5/16 in. (7.93 mmllong

L4:

2 coils (1·1/4 turns No. 22 enamel wire, 1/4 in.

Cl, C2. C3:
C4:
C5:
C6:
C7:
Ll:

0_9-7 pF, ARCO 400. or equivalen.
7·35 pF, ARea 403, or equivalent
22 pF ±S%, silver mica
470 pF, feed.hrough
0.1 J.lF, disc ceramic
1-1I2.urn No_18wire.1/4 in_ (6_35 mml
I D, 1/8 in_ (3.17 mmllong
L2: 0.39 pH, Nytronics Deciductor, or equivalent
L3: '.urn No. 18 wire, 7/32 in: (5.55 mml
ID, 118 in_ (3.17 mmllong
L4: 1 turn No. 18 wire, 1/4 in. (6.35 mm~
ID, 1/8 in. (3.17 mmllong

·Mounted as close as possible to base and emitter leads.
Fig. 5-470-MHz amplifier test circuit for measurement of power
output for type 40965.

(6.35 mm) 10, close-wound) wound in opposite

R:

directions, with 1/8 in. (3.17 mm) space between
eadl section
33
1/4 W. carbon

n.

Fig. 4- Tripier circuit (156.7 to 470 MHz) for measurement of power
output for type 40964.

CASE

TEMPERATURE(TC)-·C

92LS-1224RI

Fig. 6- Derating CUf'Vf1 for both types.

301

File No. 596

RF Power Transistors

OOm5LJD
Solid State
Division

40967
40968
2'·W and 6-W 470-MHz
Silicon N-P-N Overlay Transistors
For UHF Amplifier Service

Features:

RCA HF-44 PACKAGE
H-1779

• All devices tested at infinite VSWR with rated power input
and VCC = 15.5 V
• Devices capable of rated power output at elevated heat..ink
temperatures

RCA-40967 and 40968- are epitaxial silicon n-!>."n planar
transistors with overlay emitter-electrode construction_ They
are intended especially for uhf class C amplifier service in
low-voltage-supply mobile applications.

TERMINAL CONNECTIONS
Leads 1 & 3
Lead 2
Lead 4

- EMITTER
- BASE
- COLLECTOR

-FOrmerly RCA DaY. Nos. TA8662 and TAB563. respectively.

WARNING: The ceramic bodies of these devices contain
berYllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.
MAXIMUM RATINGS, Absoluta Maximum Values
40967
COLLECTOR-TO-BASE VOLTAGE •••..•.••••••...••..•...••.
COLLECTOR·TO-EMITTER VOLTAGE:
With base open ........................................ .
EMITTER-TO-BASE VOLTAGE ..•.•••••....•..••••.•......••
CONTINUOUS COLLECTOR CURRENT .........••••..........
TRANSISTOR DISSIPATION:
At case tamperatures up to 750 C .......................... .
TEMPERATURE RANGE:
Storage and operating (Junction) .......................... .
LEAD TEMPERATURE (During soldering):
At distances~ 1/32 in. (0.8 mm) from seating plane for 10 s max.

302

40968

VCBO

36

36

V

VCEO
VEBO
IC
PT

14
3.5
0.5

14
3.5
1.5

V
V
A

5.7

10.7

W

_ _ -65 to +200 _
_200

°C

•

°c

8-72

File No. 596

40967,40968

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tel

=2SoC

STATIC
TEST CONDITIONS
DC
DC
Current
Voltage
(rnA)
(V)

SYMBOL

CHARACTERISTIC

Collector-Cutoff Current:
Base connected to
emitter
Collector-to-Emitter
Breakdown Voltage:
With base open
With base connected
to emitter

VIBR)CES

Emitter-ta-Base Breakdown
Voltage

V(BR)EBO

Thermal Resistance:
IJunction-to..case)

ROJC

ICES

VCE

VEB

12.5

0

IE

V(BR)CEO

LIMITS
40967

40968

IB

IC

MIN.

-

1

-

0
0

25

14

75 a

-

-

14

-

-

-

-

0
0
0.5
1

25

36

75 a

-

0
0

3.5

MAX.

UNITS

MIN.

MAX.

5

36

-

-

rnA

V

-

-

3.5

-

-

22

-

11.7

V

°CIW

(lpulsed through a 25-mH inductor; duty factor = 50%

DYNAMIC
DC COLLECTOR
TEST CONDITIONS

SYMBOL

SUPPLY VOLTAGE
IVCC) -V

FREQUENCY
(f)-MHz

LIMITS
40967
40968
MIN. MAX. MIN. MAX.

UNITS

Power OutPUt:
PIE: 0.4 W (40967)
2W (40968)

POE

12.5

470

2

-

6

-

W

lIC

12.5

470

60

-

60

-

%

-

15

-

30

Collector Efficiency:
POE

D

2 W (40967)
6W (40968)

Collector-ta-Base Output Capacitance

Cobo

12.5IVCB)

1

pF

'"I

0.5

r

1.5

2

2.5

POWER INPUT IP1El-mW

POWER INPUT (PIE)-W
92CS-2041G

Fig. 1-Typical power output vs. power input
at 470 MHz for both types.

92CS-20229

Fig.2-Typical power output vs. power input
for 40967.

303

40967,40968

File No. 596

POWER INPUT

(PIE'-W
92CS-20230

Fig.3- Typica' power output VS'. power input
(0,40968.

DETAil "A"

"
'Produced by etching upper layer
of double copper·clad Teflon·fiber
board, 0.0625 in. 11.58 mm) thick
I. =2.6).

NOTES: C3 placement as close to base lead as possible.
C2 tapped 0.6 in. 115.24 mm) from base.
C4 tapped 0.70 in. 117.78 mm) from collector.

Cl,3:
C2,4,5:
C6:
C7:
C8:
Ll:

15 pF, American Technical Ceramics, ATC·l00"
2·18pF,Amperex HT 10KA/2la300pF, ATC·lOO·
1000 pF, feedthrough
0.01 p F ceramic disc
0.22pH RFC

·Or equivalent

L2:
L3:
L4:
L5:
Rl:

See Detail "A"
See Detail "B"
10 turns No. 18 wire, 0.125 in. 13.17mm) 10
Ferroxcube bead No. 56-59Q.65/4ae over resistor lead
0.47 n, 1 W

Dimensions in parentheses are in millimeters and are derived
from the original inch dimensions.

Fig.4-470-MHz test amplifi8l' for 40967 and 40968.

304

File No. 656 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

OO(]5LJD

RF Power Transistors

Solid State
Division

40970
40971
30-W and 4S-W, 12.S-V, UHF Mobile,
Silicon N-P-N Overlay Transistors
With Internally Mounted Input·Matching Networks

Features:
• Internally mounted input 16T" matching networks
using MOS base·to·emitter capacitors
• Low input Q and increased input resistance for optimum
broadband performance
RCA HF-40

H·1781

g

Withstand: infinite load·mismatch at rated input power with VCC = 15.5 V

• Emitter·ballasting and low thermal resistance (R OJC ) for added reliability
Types 40970 and 40971 * are epitaxial silicon n·p·n planar
transistors with overlay multiple-emitter-site construction and
emitter·ballasting resistors for improved ruggedness and in·
creased overdrive capabil ity.
The 40970 and 40971 incorporate internally mounted base·to·
emitter MOS capacitors in an individual fiT" matching network
for each base cell, thus providing high input resistance and low
input 0 for broadband performance capability.
These transistors are intended for use in high·power broadband
mobile uhf amplifiers operating from a 12.5·volt supply.

*

TERMINAL CONNECTIONS

Terminals No.1 & 3 - Emitter

Terminal No.2 - Base
Terminal No.4 - Collector

WARNING:
The ceramic heat·sink portion of these
devices contain beryllium oxide. Do not crush, grind, or
abrade these portions because the dust resulting from
such action may be hazardous if inhaled. Disposal should
be by burial.

Formerly RCA Dev. Nos, TA8172 and TA8493.

40970

40971

MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR·TO·BASE VOLTAGE ..................................
COLLECTOR·TO·EMITTER VOLTAGE. ...............................
EMITTER·TO·BASE VOLTAGE ......................................
TRANSISTOR DISSIPATION:
At case temperature upto 120°C ..................................
At case temperature above 120° C, derate at ..........................
TEMPERATURE RANGE:
Storage and Operating (Junction) ..................................
CASE TEMPERATURE (during soldering)
For 10 s max. . ................................................

9·74

.
.
.

36
16
4

36
16
4

V
V
V

.
.

53.5
0.67

80

W
wtc

.

-65 to +200

.

230

°c
°c

305

40970, 40971 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 656
ELECTRICAL CHARACTERISTICS

at Case Temperature (TC) = 25" C

STATIC
TEST CONDITIONS
CHARACTERISTIC

VOLTAGE
Vdc

SYMBOL

With base connected to emitter
Emitter·to·Base Breakdown
Voltage

UNITS
40971

40970
VCE

Coliector·to·Emitter Breakdown
Voltage:
With base open

LIMITS

CURRENT
mAde
IE

VEB

IC

0

V(BR)CES
V(BR)EBO
ICES
ROJC

MIN.

MAX.

16

-

16

-

36

-

36

-

0
0

4

-

-

-4

-

V

5

-

10

rnA

-

1

10
12.5

V

200

Ii

Thermal Resistance:
(Junction·to·Case)

MAX.

200

V(BR)CEO

Collector Cutoff Current

MIN.

-

-

0

-

1.5

°C/W

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC SYMBOL

Output Power

Power Gain
Collector Efficiency

Coliector·to·Base
Capacitance

POE

GpE

'IC

Cobo

SUPPLY
VOLTAGE
(VCC)-V

INPUT POWER
(PIE)·W

12.5

12.5

12.5

40970
MIN.
MAX.

10

470

30

15

470

-

10

470

4.7

15

470

-

10

470

60

-

15

470

-

-

1

-

110

-

12.5

LIMITS

FREQUENCY
(f). MHz

40971
MIN.
MAX.

UNITS

-

-

W

-

-

dB

4.7

-

45

-

%

-

55

-

220

pF

(VCB)
Load Mismatch
(See Fig. 17)

LM

15.5

10

470

GO/NOGO

-

15

470

-

GO/NOGO

INPUT POWER (PIE)-W

INPUT POWER (PIE1-W
92C5·22410

Fig. 1 - Typical output power and collector efficiency vs. input power
(or 40970 in test circuit of Fig. 13.

306

92C5-22411

Fig. 2 - Typical output power and col/ector efficiency vs. input power
for 40971 in resrcircuit of Fig. 13.

File No. 656 - - - - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ 40970, 40971

FREQUENCY (f)-MHz

fREQUENCY (f)-M.Hz
92C5-22412

Fig. 3 - Typical output power and collector efficiency .,s. frequency
for 40970 in rest circuit of Fig. 13.

92C5-22413

Fig. 4 - Typical output power and collector efficiency vs. frequency
for 40971 in test circuit of Fig. 13.

FREQUENCY Cf) -MHz

92C5-20659

92C5-22414

Fig. 5 - Typical broadband output POlNef and collector efficiency
vs. frequency for 40970 in amplifier circuit of Fig. 15.

Fig. 6 - Typical broadband output power and col/ector efficiency VI.
frequency for 40971 in amplifier circuit of Fig. 15.

!O

I

BO

ffi

60

~
~

~

40

20

COLLECTOR SUPPLY VOLTAGE (Vccl-V

COLLECTOR SUPPLY VOLTAGE (Vccl-V
92C5-20663

Fig. 7 - Typical output power .,s. collector supply voltage for 40970.

92.C5-22416

Fig. 8 - Typical output power vs. collector supply voltage for 40971.

307

40970, 40971 __________________________________________________

FREQUENCY

cn- MHz

FREQUENCY (f)'-':'MHz:

92CS-22417

92:CS-20664RI

Fig. 9 - Typicsllarge-signal series input impedance VI. frequency

for 40970.

File No. 656

Fig. 10 - Typicallarge-signal series input impedance vs. frequency
for 40977.

FREQUENCY ( f ) - MHz
92CS-20665

Fig. " - Typical collector load resistance and collector load reactance
w. frequency for 40970.

Fig. 12 - Typical collector load resistance and collector.load resctance
... frequency for 40977.

Vee: 12.5V

"...,""-0,;.........----0

DETAIL "A"
INSULATOR

TYPE 40970 OR
40971

9Zel-ZOG6S'1:!

NOTE: A a.002·in. (O.05-mm) insulator must be used under each

92CS-Z0870AI

Ll: 0.22,.H RFC
L2: Ferroxube Bead No. 56-590-65/48"
L3. L4: See detail of construction (Fig. 14)
L5: 10 turns. No.20wire, 0.187 in. (4.75mm) 10
Rl: 0.47 0,1 W
Allen-Bradley Co .• Milwaukee. Wise.

emitter terminal to prevent grounding of the microstrip lines
(see Detail '"A'"'.
C1, C4: 10 pF. disc, Allen-Bradley·
C2: 22 pF. disc, Allen-Bradley·
C3, C6, C9: 0.8-10 pF, Johanson"
C5, Cl0: 8.2 pF, disc, Allen·Bradley"
·Or equivalent
Saugerties, N. Y.
C7: 1000 pF, feedthrough
Johanson Mfg. Corp., Boonton, N.J.
C8: 0.01 J'F. disc. ceramic
Fig. 13 - Amplifier test circuit for measurement of output power. gain,

~:r:!::t!'~~;;~'~i ~:~rica,

efficiency. and load mismatch. for 40970 and 40971.

308

File No. 656 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40970, 40971

I

92CS-20660

0.250
r-(6.35)

NOTE 1: Produced by etching upper layer of double copper-clad Teflon
glass epoxy board: 1/16 in. (1.58 mm) thick,E "" 2.6.

NOTE 2: Dimensions in parentheses are in millimeters.
Fig. 14 - Construction details for L 3 and L4 in amplifier testc;rcuit

of FIg. 73.

NOTE 1: Produced by etching upper layer of double copper-clad Teflon
glass epoxy board: 1/16 in. (1.58 mm) thick, E = 2.6.
NOTE 2: Dimensions in parentheses are in millimeters.

Fig. 16 - Construction details for L 3 and L4 in 4SQ-47(J.MHz broadband
amplifier circuit of Fig. 15.

cr¥Q

r.;;l

~

92CS-2241S

STUB

NOTE: Capacitors C3 and C4 are placed directly under base and
collector terminals to ground
Cl, C2: 2-18 pF, Amperex No. HT10MA/218.
C3: 47 pf. disc, Allen-Bradley·
C4: 47 pF. disc, Allen-Bradley·

C5: 6.B pF. disc, Allen-Bradley· (omit from circuit that uses

409701
C6: 1000 pF, disc, Allen-Bradley·
C7,: 1· ",F, electrolytic
C8: 1000 pF, feedthrough
L1: 0.22 "H RFC
L2: Ferroxcube Bead No. 56-590-65/48L3, L4: See detail of construction (Fig. 16)
L5: 15 turns, No.la wire, 0.181 in. (4.75 mm) 10

Rl:0.470,IW

·Or equivalent

Allen-Bradley Co., Milwaukee, Wisc.
Amperex, Hicksville, N.V.
Ferroxcube Corp. of America, Saugerties, N. Y.

Fig. 15 - 450-47(J.MHz broadband amplifier circuit for 30 watts (using
40970) or 45 wat.. (using 40977).

92CS-19418

The transistor must withstand any load mismatch provided by
the following test conditions:
1. The test is performed using the arrangement shown.
2. The tuning stub is varied through a half·wavelength, which
effectively varies the load from an open circuit to a short
circuit.
3. Operating conditions: Vee = 15.5 V; rf input power = 10 W
for 40970, = 15 W for 40971.
4. Transistor dissipation rating must not. be exceeded during
the above test so that the transistor will not be damaged or
degraded.
Fig. 17 - A"angement for testing load-mismatch capability of

40970 and 40977.

309

File No. 597

OOCIBLJO

RFPower Transistors

Solid State
Division

40972 40973 40974
1.75-,10-, and 25-W, 175-MHz
Silicon N-P-NOverlay Transistors

··'
m
.'

For High·Power VHF Amplifiers

I:

Features:

40972

40973
40974

JEDECTO·39

RCAHF·44

H·13S1

• Designed for vhf mobile transmitters

H·1779

• 25 W (min. I output at 175 MHz (VCC = 12.5 VI
• Infinite VSWR load·tested at constant input power,
f = 175 MHz, VCC = 15.5 V (409741

RCA·40972, 40973, and 40974 are epitaxial silicon
n·p·n planar transistors of the overlay emitter·electrode
construction. They are intended for high·power·output
vhf class C amplifier. service in low·voltage·supply
applications.

These devices are especially intended for use in vhf mobile
·transmitters operating from a 12.5·volt. supply. The 40973
and 40974 are emitter·ballasted, and all 40974 units are
tested at constant input power (f = 175 MHz, Vce·= 15.5 V,
infinite load VSWRI.
.

MAXIMUM RATINGS,Absolute'Maximum Values:
40972

40973

40974

COLLECTOR·TO·EMITTER BREAKDOWN VOLTAGE:
With base shorted to emitter ........ ,...................

V(BRICES

36

36

36 .

V

With base open

V(BRICEO
VEBO

14

14

14

V

3.5

3.5

3.5

V

0.33

4.5

5

A

EMITTER·TO·BASE VOLTAGE

..........................

CONTINUOUS COLLECTOR CURRENT
TRANSISTOR DISSIPATION:
At case temperatures up to 750 C
At case temperatures above 750 C, derate linearly

W

3.5

25

35.7

0.028

0.2

0.286

WloC

- - - -65 to +200--

oC

230

oC

TEMPERATURE RANGE:
Storage and operating (Junction I ....................... .
LEAD TEMPERATURE (During soldering):
At distances
10 s max.

310

~

1/32 in. (0.8 mml from seating plane for

. ........................................ .

8·72

File No. 597 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40972. 40973. 40974
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 250 C
STATIC,
TEST CONDITIONS
CHARACTERISTIC

VCE VEB
Collector, Cutoff Current:
Base connected to emitter
Collector-to-Emitter
Breakdown Voltage:
With base open

Current
mAde

Voltage
Vdr

SYMBOL

12.5

ICES

IE

0

1

25a
200
25a
200

14

-

0
0

==

-

10

40974

-

10

-

-

-

-

14

-

14

-

-

36

-

3.5

-

36

-

-

35.7

-

-

UNITS

MIN. MAX.

-

-

-

ROJC

a Pulsed thr~ugh a 25-mH inductor; duty factor

MIN. MAX. MIN. MAX.

-

0,5
5

V(BR)EBO

Thermal Resistance:
(Junction-to-Case)

IC

0
0

V(BR)CES

Emitter-to-Base Breakdown
Voltage

IB

40973

40972

0

0

V'BRICEO

With base connected
to emitter

LIMITS

36

-

-

-

-

-

3.5

-

3.5

-

-

5

-

3.5

mA

V

V

°CIW

50%.

DYNAMIC

TEST & CONDITIONS
Output Power:
PIE =0.1 W (40972)
1.75 W (40973)
9 W (40974)
Large-Signal CommonEmitter Power Gain:
POE = 1.75 W(40972)
lOW (40973)
25W (40974)
Collector Efficiency:
POE =1.75 W (40972)
lOW (40973)
25 W (40974)
Collector-to-Base
Output Capacitance

DCCOLLECTOR
SYMBOL SUPPLY VOLTAGE
IVccl-V

LIMITS
FREQUENCY
40972
(f)-MHz
, MIN. MAX.

40973

40974

UNITS

MIN. MAX. MIN. MAX.

POE

12,5

175

1.75

-

10

-

25

-

W

GpE

12,5

175

12.4

-

7.6

-

4,5

-

dB

7lC

12.5

175

50

-

60

-

60

-

%

12.5 (VCB)

1

-

15

-

30

-

BO

pF

Cobo

TERMINAL CONNECTIONS
FOR 40972

TERMINAL CONNECTIONS
FOR 40973 AND 40974

LEAD 1 - EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR, CASE

LEADS 1 & 3 - EMITTER
LEAD 2 - BASE
LEAD 4 - COLLECTOR

WARNING: The bodies of types 40973 and 40974
contain beryllium oxide. Do not crush. grind, or abrade
that portion because the dust resulting from such action
may be hazardous if inhaled. Disposal should be by burial.

311

40972,40973,40974 _ _ _ _ _ _ _ _ _ _ _...,....._ _ _ _ _ _ _ _ _ _ File No. 597,
FREQUENCY (fl-I75'MHz
CASE TEMPERATURE ITe). 2S·C

!<
tl
ill

13

'I"

~
~

.

f

~

"

,~~~.'3"\1
12

o\...~Il>G

~~-

::

\2.'50'11

~~"\'\~

"
10

lu

;€.""c.t.

~"

>

u

~

-<.,0,,-,,\0'

11. 5 \1

~~

u
~

I:;

,.0...."
9

0

75

~"

8

"c.(.~~~

70

i
8

65

7

1.5
2
INPUT POWER IPIE)-W
COLL~CTOR-TO·EMITTER VOLTAGE (VCE I-v

2.5
92CS-20417

92CS-20419

Fig. 1- Typical output power vs. supply

Fig.2- Typical output power and collector

voltage for RCA-40972 in the circuit of Fig. 4.

efficiency VB. input power for
RCA·40973 in the circuit of Fig. 5.

FREQUENCY (f)-175 MHz
CASE TEMPERATURE (Tel-25°C

'"I

~
ffi

~

!<
tl

'"w

1;

30

25

>

~

u

20

~

15

"
10

Vee

eo ~
75

C1, 2, 3, 4: 7-35 pF, AReO 403. or equivalent
C5: 1,000 pF feedthrough
C6: 0.005 p.F disc ceramic
L,: 2 turns No. 16 wire, 3/16 in. (4.76 mm) ID, 1/4 in. (6.35 mmllong
L2: Z "" 450 n Ferro·cube VK-200.Q9/3B, or equivalent·
La: 2 turns No. 14 wire. 1/4 in. (6.35 mmllD, 5/16 In: (7.93 mm)
4: 3 turns No. 14 wire. 3/8 in. (9.52 mm) ID, 3/B in. (9.52 mm) long

:i

8

70
6
7
B
INPUT POWER (P1E)-W

10
92CS-20418

Fig.3-Typical output power and collector
II

ffic;ency

VB.

input power for

RCA-40974 in the circuit of Fig. 5.

Fig.4-175·MHz amplifier test circuit for measurement of output
power from RCA-f0972.

TO
SUPPLY

rolf\

COLLEC~
c.

,

T

I

Co

C1: 7-100 pF. ARCO 423, or equivalent
C2: 4-40 pF, AReO 422, or equivalent
C3: 0.1 J.lF ceramic
(4: 0.001 ,uF feedthrough
C5: 150 pF, ATC·100·B-150. or equivalent
Ca: 14-150 pF, ARCO 424, or equivalent
C7: 24-200 pF. ARCO 425, or equivalent
L1: 1/2 turn No. 14 wire,1/4 in. (6.35 mm) ID
L2: RFC. Z '" 4500, Ferro)(cube VK-200-09/3B, or equivalent
T1: Twisted pair of No. 20 enameled wire; 14 turns/in.
Formed in a loop 3/8 in. (9.52 mm) diameter, cross connected
(End of one winding connected to beginning of other)

Fig.5-175-MHz amplifier test circuit for measurement of output power and collector efficiency of
RCA40973 and 40974.

312

File No. 606 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

OO(]5LJD

RF Power Transistors

Solid State
Division

40975 40976 40977
O.05·~Oa5 .. ~and

6-W, 1l18-136-MHz
Silicon N·P-N Overlay Transistors

For High·Power VHF Amplifiers

Features:
40975
40976
JEDEC TO·39
H-1381

40977
RCA HF·44
H-1779

a Designed for vhf aircraft transmitters

a 6W (min.) output at 118 MHz (12.5·V supply)
11

Infinite VSWR load-tested at constant input power,
f = 118 MHz, VCC = 25 V (40977)

RCA-40975, 40976, and 40977 are epitaxial silicon n·p·n
planar transistors of the overlay emitter electrode construction.
class

They are intended for high-power-Qutput, vhf,

C amplifier service in low-voltage-supply applications.

These devices are especially intended fOl use in vhf AM
transmitters operating from a 12.5-volt supply. The 40977
is emitter-ballasted, and all 40977 units are tested at constant
input power (f = 118 MHz, VCC = 25 V, infinite load VSWR).

.,.

115

120

125

130

j:j:.

135

FREQUENCY (f)-MHz
92CS- 24684

Fig. 1 - Typical performance characteristics of the amplifier

shown in Fig.2.

MAXIMUM RATINGS, Absolute Maximum Values:
COLLECTOR·TO·EMITTER BREAKDOWN VOLTAGE:
With base shorted to emitter
With base open
EMITTER·TO·BASE VOLTAGE.
CONTINUOUS COLLECTOR CURRENT.
TRANSISTOR DISSIPATION:
At case temperatures up to 75°C . . . . .
At case temperatures above 75°C, derate linearly
TEMPERATURE RANGE:
Storage and operating (Junction I
. . . . .
LEAD TEMPERATURE (During soldering):

VEBO
IC
PT

. . .

At distances 2: 1/32 in. (0.8 mm) from seating plane for
10 s max.

9·74

V(BR)CES
V(BR)CEO

40975

40976

40977

55
30
3.5
0.4

60
30
3.5
0.5

60
30
3.5
5

3.5
0.028

5
0.04

25
0.2

W
W/DC

- - - -65 to +200 - - -

°c

230

°c

V
V
V
A

313

40975,40976,40977

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 606

ELECTRICAL CHARACTERISTICS, At C~se Temperature (TCi = 2!PC

STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

DC
Voltage
V
VCE

VEB

12.5

0

LIMITS

DC
40976

40975

Current

UNITS

40977

mA
IE

IB

IC

MIN. MAX. MIN. MAX. MIN. MAX.

Collector Cutoff Current:

Base connected to emitter

Coliector·to·Emitter
Breakdown Voltage:
With base open
With base connected
to emitter
Emitter·to·Base Breakdown
Voltage

ICES

0
0

V(BR)CEO
0
0

V(BR)CES

0.5
5

V(BR)EBO

0.1

-

1

-

10

-

30

-

5
200 a

30

-

30

-

-

-

5
200 a

55

-

60

0
0

-

-

-

-

-

-

60

3.5

-

3.5

-

-

-

-

-

3.5

-

35.7

-

25

-

rnA

V

V

Thermal Resistance:
(Junction·to·Case)

ROJC

5

°C/W

40977

UNITS

a Pulsed through a 25-mH inductor; duty factor = 50%.

DYNAMIC
DC COLLECTOR
FREQUENCY
TEST & CONDITIONS SYMBOL SUPPLY VOLTAGE
(f) - MHz
(VCC) - V
Power Output:
PI E = 0.005 W 140975)
0.05W 140976)
(40977)
0.5W
1.2 W (40977)

12.5
12.5
12.5
25

POE

11B

LIMITS
40976

40975

MIN. MAX. MIN. MAX. MIN. MAX.
0.05

-

-

-

-

-

-

0.5
-

-

-'

-

6
22b

-

W

-

Large·Signal Common·
Emitter Power Gain:

POE = 0.05 W (40975)
0.5W (40976)
(40977)
6W
Collector Current:
POE = 0.05 W (40975)
0.5W (40976)
(40977)
6W
Collector Efficiency:
(40977)
POE = 6W
Collector-to-Base
Output Capacitance

dB

GpE

IC

118

10

-

10

-

10.8

-

12.5

118

-

60

-

140

-

950

rnA
.'

l1C

25

118

-

-

-

-

55

-

%

Cabo

12.5 (VCB)

1

-

4

-

15

-

30

pF

b Pulsed Input: Rep. rate = 1 kHz
Envelope shape = Square wave
Duty factor = 50%

314

12.5

File No. 606 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40975,40976,40977

Vee
12.5 V

Vee
12.5 V MODULATED

r----------------1--------------, C7

~

Dr

"5
"r

I

"2

Cr2

e"

"3

92CS- 20613RI

Cl,C2.C7.Cl0: 1.000 pF leedthrough
C3: 0.02 ",F disc ceramic

C4: 250 pF silver mica
Cs: 300 pF disc ceramic
Cs : 50 pF silver mica
Cs: 68 pF silver mica
Cg: 120 pF silver mica
Cll: 8-60 pF. ARCO
405, or equivalent
et2: 62 pF silver mica

01: lN5397. or equivalent
Ll: 8 turns No.20 wire,
5/32 in. 10. 5/8 in.
long; tap 3-1/2 turns
from Vee side

4: z : : 450 n. Ferroxcube No.

L2: 1 turn through Ferroxcube

Rl: 22 n, 1/2 W, carbon
R2: 1.5 KD, 1/2 W carbon
R3: 470 n. 1/2 W carbon

VK200"()9/3B. or equivalent

LS: 10 turns No. 20 wire, 5/32 in. 10. 11116 in.
long; tap 3 turns from output side

La: 3 turns No.20 wire, 3/32 in.lD.3/16 in. long

ferrite bead No.56·690-65/48,
or equivalent
L3: '8-1/2 turns No.20wire. 5/32 in,lD,
5/8 in. long; tap 1-1/2 turns
from Vee side

R4: 47

RS: 15

n,

1/2 W carbon

n. 112 W carbon

Fig.2 - 118·to--I36·MHz 6·W AM amplifier lor aircraft equipment.

Vcc-rZ.5Y

-=-

92CS-Z0614

C,: 0.2"F disc ceramic
C2: 470 pF leedthrough
C3: 250 pF silver mica
C4: 300 pF disc ceramic
Cs: 50 pF silver mica
C6: 39 pF silver mica

L1: 8 turns Ne.2D wire. 3116 in. 10,
5/8 in. long CT
Rl: 1.5 kn, 112 W carbon
R2: 470 n. 112 W carbon
R3: 47 n. 1/2 W carbon

Fig.3 - , Is·MHz amplifier

rest circuit for 40915.

Cl:
C2:
C3:
C4:

9ZCS-20615RI

1,000 pF leedthrough Ll: 8 turns No.20 wire, 3/16 in. 10. 5/8 in.
0.05 pF disc ceramic
long; tap 3 turns. from gr~und
.
50 pF silver mica
L2: 7 turns No.2D Wire, 3/16 10.10. 5/8 In.
68 pF silver mica
long; tap 3-3/4 turns from collector
L3! 1 turn ferrite choke. Ferroxcube Corp.
ferrite bead No. 56-590-65/48. or
equivalent
Fig.4 - , IS-MHz amplifier test circUit for 40916.

315

40975,40976,40977 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 606

C1: 0.05 JJ.F disc ceramic
C2:
C3:
C4:
Cs:
Cs:

1,000 pF feedthrough
7.5 pF disc ceramic
68 pF molded mica
120 pF silver mica
62pF silver mica
C7: 8-60 pF ARea 405, or equivalent
L1: Z: 750
Ferroxcube VK200·10/3B,
or equivalent

n.

L2: 7 turns No.20 wire, 3116 in. 10, 518.in.
long; tap 1-1/2 turns from ground side
L3: Z: 450

4:
92CS~20616

Ls:

n, Ferroxcube VK200-09/3B, or

equivalent
Nine 3/4-turns No.20 wire, 3/16 in. 10,
13/16 in. long; tap 3 turns from output side
3 turns No.20 wire, 3/16 in.!O, 3/8 in. long

Fi9.5 - tt8-MHz amplifier test circuit for 40977_

TERMINAL CONNECTIONS

TERMINAL CONNECTIONS

FOR 40975 and 40976

FOR 40977

LEA01 -EMITTER
LEAD 2 - BASE
LEAD 3 - COLLECTOR, CASE

LEADS 1 & 3 - EMITTER
LEAD 2 - BASE
LEAD 4 - COLLECTOR

WARNING: The body of type 40977 contains beryllium oxide,

Do not crush, grind, or abrade that portion because the dust
resulting from such action may be h8zardo~s if inhaled. Disposal should be by burial.

316

File No. 616 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

RF Power Transistors

CRlCI8LlD
Solid State

41008
41009 41010
41008A 41009A

Division

41008
41009

H-1789

~
~


-.~

41008A
41009A
41010

.'

.

0.5-W, 2-W, and 5-W, 470-MHz, 9-V
Silicon N-P-N Overlay Transistors
For Low·Voltage Handheld UHF
Broadband Amplifier Service

Features:
•

.
HF·41

Infinite VSWR capability with rated power input
andVcc=9V

• Devices capable of rated power output at elevated heat-sink
H-1788

temperatures

Types 4100B, 4100BA, 41009, 41009A, and 41010 are
epitaxial silicon n-p-n planar transistors with overlay emitterelectrode construction.
They are especially intended for handheld broadband uhf
class C amplifier service in low-voltage-supply applications.

WARNING: The bodies of these devices contain beryllium
oxide. Do not crush, grind, or abrade that portion because
the dust resulting from such action may be hazardous jf inhaled. Disposal should be by burial.

MAXIMUM RATINGS, Absolute-Maximum Values:
41008
4100BA
COLLECTOR·TO·BASE VOLTAGE ......................... .

VCBO

COLLECTOR·TO·EMITTER VOLTAGE:
With base open ....................................... .
EMITTER·TO·BASE VOLTAGE
TEMPERATURE RANGE:
Storage and operating (Junction) ........................... .
LEAD TEMPERATURE (During soldering):
At distances;;:: 1/32 in. (O.B mm) from seating plane for lOs max ...

9·73

36

36

14

14

3.5

_

..

41009
41009A

3.5

41010
36

14

V

3.5

V

-65 to + 2 0 0 _

200

TERMINAL CONNECTIONS
FD R 41008 and 41009

TERMINAL CONNECTIONS
FOR 41008A, 41009A and 41010

TERMINALS 1 & 3 - EMITTER
TERMINAL 2 - BASE
TERMINAL 4 - COLLECTOR

TERMINALS 1 & 3 - EMITTER
TERMINAL 2 - BASE
TERMINAL 4 - COLLECTOR

V

.

°c

°C

317

41008,41009,41010
, File No. 616
41008A,41009A
--------------------ELECTRICAL CHARACTERISTICS, At case Temperature (TC) = 25"C
STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAIlE
Yd.

LIMITS

CURRENT
mAde

41008
4100BA

'C

Collector Cutoff Current:
Base connected to
emitter
Collector-ta-Emitter
Sustain~ng Voltage:
With base open

Thermal Resistance:
IJunction-to-Case)

MIN.

41010

MAX.

MIN.

UNITS

MAX.

mA

0.5
0
0
0

0
0
0

VCEs(susl

Emitter-to-Base Breakdown
Voltage

MAX.

0

'CES

VCEO(sus.

With base connected
to emitter

MIN.

41009
41009A

OS
VIBRIEBO

64
254
754

'4

54
254
754

36

0
0
0

3S

,4
14

V

36
36
;-

3.5

V
3.5

50

RSJC

'5

·CIW

'0

a Pulsed through a 25-mH indurtor; duty factor" 50%

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

Power Output:
P,E· 0.15 W 141008, Al
OS W (41009, AI
2W 14'0'01

SYMBOL

41008,A

41009,A

41010

MIN. MAX.

MIN. MAX.

MIN. MAX.

UNITS

POE

9

470

0.5

-

2

-

5

-

W

"c

9

470

60

60

-

60

-

%

,

-

-

4

-

6

-

25

pF

Collector Efficiency:
POE - 0.5 W 14'008, AI
2 W 141009. AI
5W 14'0'01
Collector-ta-Base Output Capacitance

LIMITS

DC COLLECTOR FREQUENCY
SUPPLY VOLTAGE
III-MHz
IVccl-V

Cobo

91 V CBI

CASE TEMPERATURE ITe 1-2SoC
FREQUENCY (f). 470 MHz

CASE TEMPERATURE ITC'''25·C
FREOUENCY (f I .. 470 MHz

~O.75

...
"

.

~O.50

o
0.25

o

50

100
150
INPUT POWER IP1EI-mW

200

Fig. 1 - Typical power output vs. power input at 470 MHz for 41008
and41008A in the c/rcuitof Flg.9.

318

200

300

400

500

INPUT POWER (PIE)-mW
92CS-20477

92CS-20478

Fig.2 - Typical power output vs. power input at 470 MHz for 41009
and 41009A in the circuit of Fig.9.

File No. 616 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41008, 41009, 41010
41008A,41009A
CASE TEMPERATURE ITC'-25DC
FREQUENCY If I - 470 MHz

5-W HANDHELD AMPLIFIER

8 COLLEClOR EFFICIENCY I"IC 1=75,._ ITYP.)

12

CASE TEMPERATURE ITCI - 25·C
PIN ·0.05 W

,. 10

I

1;

rf8
'"

"
~"
I

IO.5V

~...

...u

9V

~o

70

t!:i

...w'"

60 ~

a

50

1.5

2.5

420

430

440
450
460
FREQUENCY 1f)-MHz

INPUT POWER 1P1E'-W

470

92CS-21060

92CS-21061

Fig.3 - Typical power output vs. power input at 470 MHz fo(41010
in the circuit of Fig.9.

1.5

3

"'"

480

Fig.4 - Tvpical power output vs. frequency for amplifier chain using 41008
or 41008A, 41009 or 41009A, and 41010 with supply voltages
of 9 and 10.5 volts, measured in the circuit of Fig.B.

W HANDHELD AMPLIFIER

CASE TEMPERATURE ITCI =2 5 DC
PIN -0.05W

10.SV

"
I

5

9V

ffi

u
......

7.SV

w

70

ffi

......
60 ~

'l@9V

'"
420

430

440

450

460

470

FREQUENCY If)- MHz

480
92CS-21062

Fig.5 - Typical power output vs. frequency for amplifier chain using
41008 or 41008A and 41009 or 41009A with supply voltages
of 7.5, 9, and 10.5 volts, measured in the circuit of Fig. 7.
r---~~----_.------_1----------._------~--------~~------~VCC··v

1

.,

C6

L9
L6

C~50n

L3

cia

CII

-=LS

1
-=-

C7

92CM- 21061
ZIN - !4 + j 5.5111
ZCL" (20 + I 52.51

ZIN - 14.2+ j 5.5111

n

ZCL ~('6+i 7.51

n

ZIN - 12.3 + j 5.01
ZCL - 19 + j 6.5)

n

n

C 1: 10pF disc:: ceramic

R I : 1.2kH.1/4Wcarbon
L 4 • LlO: Single loop No. 20 wire 0.0625 in.
C2_ C, 1: 2·18 pF Amperex HT10KA/2'8.
R 2 : 68 n. 1/4 W carbon
(1.58 mml long. 0.187 in.
orequivalenl
L,: S':1gle loop No. 20 wire 0.375 In.
(4.76mmIID
C3 • Cg : 0.01 j.lF ceramic
19.52 mmllong. 0.0625 in.
Le_ L g : 5 turns No. 20 wire 0.375 in.
C4 : 2 pF disc:: ceramic
('.58mmIIO
{9.52 mmllong. 0.125 in.
C5 : 470 pF d,se: ceram.c
L 2 : SIngle loop No. 20 wIre 0.25 in.
(3.'7mmIID
C6 : 0.1 "F ceramIc
!6.35mm) long
L7: Songle loop No. 20 wire 0.75 in
C7• C1()o C12: 33 pF disc: ceramic
L 3 . L 5 • La: 0.22 "H Nyuon,c5 Decl·Ductor.
(19.05 mm)long. 0.1 a5 in.
C8 : 10 pF disc ceram.c
or equivalent
(4.70mm)10

Fig. 6-5·W. 9·volt amplifier with impedance data.

319

41008.41009.41010 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 616
41008A. 41 009A

r---~r_----_t------_1----------.-------~---{)VCC·.V

C6

l

.,

L6

41009

L3

41008

PIN'~

1

CI

'J2CS-21064

Z,N = 14.2 + j 5.5) n

Z, N = 14 + j 5.5) n
ZCL = 120 + j 52.5)

c,: 1 C pF disc ceramic
C2• C8 : 2·18 pF Amperex HTIOKA/218. or
Ca. Cg :
C4 :
C5 :
CS:
C7 • C, 0:
R 1:
R2:

equivalent
0.01 #IF ceramic
2 pF disc ceramic
470 pF disc ceramic
0.1 J..I.F ceramic
33 pF disc ceramic
1.2 kn. 114 W carbon
68 n, 1/4 W carbon

L,: Single loop No. 20 wire 0.375 in.
19.52 mm) long, 0.0625 in.
11.58mm) 10

n

ZCL =116+j7.5)n

L2 : Single loop No. 20 wire 0.25 in.

16.35 mm) long
L 3 _ LS: 0.22 p.H Nvtronics Deci-Ductor,
or equ ivalent
L4: Single loop No. 20 wire 0.0625 in.

11.58 mm) long, 0.187 in.
14.76mm) ID
La: 5 turns No. 20 wire 0.375 in.
(9.52 mm) long, 0.125 in.
(3.17 mml 10
L7: Single loop No. 20 wire 0.75 in.
119.05 mm) long, 0.185 in.
14.70mm) 10

Fig. 7-1.5-w,. 9-vatt amplifier with impedance data.

INPUT

POWER
METER

REFL
POWER
METER

20V
IDA
POWER
SUPPLY

92CM- 21065

Fig.8 - 47D-MHz power output test set-up for all types.

320

File No. 616 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41008, 41009, 41010
41008A,41009A
:~~:A ~-o;,;_--p--~ vcc' 9V
41009
41oo9A

L3
C8

L4

C5

C7

92CN-21066

c 1• C 2• C5, C7 ,

2·18 pF Amperex HT10KA/218'

C3 : 15 pF American Technical

Ceramics, A TC-l 00·

C4 , 1000 pF feedthrough

Ir'--2'~5--_'1

-L-

(57015)

CS: O.Ol.uF disc ceramic
Ca: 300 pF American Technical
Ceramics, ATe-l00·
Ll: 0.22.uH choke
L2: SeeA
L3: 10 turns No. 18 wire 0.125 in.

t1

(3.17 mmllO, 1 in.
(25.4 mmllong
L4' See B

R1' 0.47 n, 1 W
Notes:

as possible.
C2 tapped 0.60 in. (15.24 mm) from

Note 1: Dimensions in. parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.
Note 2: Produced by removing upper layer of double-clad.
Teflon board, Budd Co. Polychem Div. Grade TOST

C3 placement as close to base lead

base.
Cs tapped 0.70 in. (17.78 mml from
collector.
·Or equivalent

1 oz. 0.0625 in. (1.52 mml thick. ( e= 2.61. or
equ ivalent.
Fig. 9-47()'MHz amplifier test circuit for measurement of power output for all types,

20V

INPUT
POWER
METER

REFL.
POWER
METER

IDA

POWER
SUPPLY

STUB

92CM~

21067

Fig. 10-Load-mismatch-capability test set·up for all types.

321

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 658

OOCD3LJl]

RF Power Transistors

Solid State
Division

41024

1-W, 1-GHz Silicon N-P-N
Overlay TransistorHigh-Gain Device for Class B- or COperation in UHF Circuits

Features:
JEDEC TO·39

• '·watt output min. at , GHz (5 dB gain)
• For sonde applications
H·1381

0.3-watt output typo at 1.68 GHz (VCC = 20 V)

RCA·41024 is an epitaxial silicon n·p·n planar transistor

connected in parallel are used in conjunction with a common

of the overlay-ernitter-electrode construction. It is intended

collector region. Compared with other structures, this arrange·

as a high-power amplifier, fund-amental.frequency oscillator
and frequency multiplier. It may be used in final, driver, and
predriver amplifier stages in uhf equipment and as a funda·
mental-frequency oscillator at 1.68 GHz.

ment provides a substantial increase in emitter periphery for
higher current or power. and a corresponding decrease in
emitter and collector areas for lower input and output capaci·

tances. The overlay structure thus provides greater power

I n the overlay structure, a number of individual emitter sites

output, gain, efficiency. frequency capability, and linearity.

MAXIMUM RATINGS, Abso/ute·Maximum Values:
COLLECTOR-TO·BASE VOLTAGE .. ____ . _ ..
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE:
With external base·to·emitter resistance (RBE) = 10 n
With base open . . . . . . . . . . . . _ _
EMITTER·TO·BASE VOLTAGE . . . . . .
..
CONTINUOUS COLLECTOR CURRENT
TRANSISTOR DISSIPATION:
........
At case temperatures up to 2So C
........
At case temperatures above 25 0 C
TEMPERATURE RANGE:
Storage and Operating (Junction) . . . . _ . . . . .
LEAD TEMPERATURE (During soldering):
At distances ~ 1/32 in. (0.8 mm) from seating plane for 10 s max.

.........

VCBO

55

V

VCER

55

V

VCEO
VEBO
IC
PT

24
3
0.4

V
V
A

3.5
See Fig.

W

-65 to 200

°c

230

°c

TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector, Case

322

8-73

File No. 658

____________________________________________________ 41024

ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 25°C
TEST CONDITIONS
CHARACTERISTIC

Voltage

SYMBOL

V CB

Collector Cutoff Current:
With base open
With base connected to emitter

Current
mAde

Vdc
V CE

I CEO

15

ICES

50

IE

IB

LIMITS
IC

0

Min.

Max.

-

20

0

V(BR}CBO

~A

-

1

0.1

55

-

V

5

55

-

V

0

3

-

V

100

-

0.5

V

-

3.0

pF

6.0

-

1"

-

Collector-ta-Base

Breakdown Voltage

UNITS

Collector-to-Emitter

Sustaining Voltage:

With external base-ta-emitter

VCER(su,}

resistance (A SE ) '" 10 n
Emitter-te-Base
Breakdown Voltage

0.1

V(BR}EBO

Collector-ta-Emitter
Saturation Voltage

10

VCE(sa,}

Collector-to-Base Capacitance
(Measured at 1 MHz)

Cob

Magnitude of Common-Emitter
SmaU-5ignal Short-Circuit

Forward-Current Transfer Ratio

30

0

\h fe \

15

POUT

28

50

(Measured at 200 MHz)

R F Power Output
Common Emitter Amplifier
at 1 GHz (See Figs. 2 and 5)

W

aFor P,N"" O.316W, minimum efficiency::: 35%.

CASE TEMPERATURE (Tcl~25"C
COLLECTOR· TO-EMITTER VOLTAGE (V CE)" 2B V

2.'

~

2.0

~

1.5

1;

'RF" Po

." 5

CASE

I
TEMPERATUREITC)-OC

§

1.0

I

0.5

0
0.4
92Ls-r224Rr

0.6

0.8

1.0

1.2

FREQUENCY (t)-GHz
92LS·J84JR2

Fig. 1- Derating curve.

Fig. 2- Typical power output VS, frequency.

323

41024 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 658

.,1

CASE TEMPERATURE {TC)=25°C
RF POWER INPUT (PIN )=O.3W
FREQUENCY (f) = I GHz
CIRCUIT OF FIG. 5

.,
1
0:.

1.2S

S

r§

!::~_

FREQUENCY (tl "1.68 GHz
CIRCUIT Of FIG. 6
COLLECTOR CURRENT(I.a=BOmA
CASE TEMPERATURE (T C )=25 0 C

"
~

1.00

O.S

0.4

I-

0.75

~

0.3

1&1

0.5

ffi

0.2

~

0.25

~

0.1

o

'"
~

~

10

15

20

25

30

35

10

40

COLLECTOR

COLLECTOR TO EMITTER VOLTAGE (VCE) -;;LS-2IS6RI

Fig. 3- Tvpical rf power output V$'. coflector·to-emitter voltage.

15

20

25

30

35

40

SUPPLY VOLTAGE(Vcc1-V
92LS-2167RI

Fig. 4- Typical oscillator power output vs. collector supply voltage.

Vee"2ev

C2
L2
C4

I~--~~------+--:~
I
-L I

I

___ ___ __-=_-l

1=

TRANSlS1..m MOUNT

-Vee

VEe

I

Cl. C2: 0.35-3.5 pF
92CS-22U8

CT. C5, C7: 1-10 pF air·dielectric, Johanson-

C2: 0.6-6pF
C3: 0.1~F.50Vdisc
C4: 470 pF Feedthrough
C6: 10 pF. ATC·

.C3, C4: 500 pF feedthrough
d: 0.75 in. 09.1 mm) output line, center conductor
width = 0.16 in. (4.06 mml
L1, L2: RF choke - 5 turns, No. 28 wire, 0.125 in (3.17 mml
dia. x 0.5 in. (12.7 mm) long
R: 0-50 ohms
Transistor Mount: 0.0625 in. (1.59 mml

L 1: O.l,uH RFC, DeciductorL2. L3: 0.16 in. (4.06 mml wide, 1 in. (25.4 mm) long on
0.0625 in. (1.59 mm) thick Teflon-Fiberglas
board ( E = 2.61
L4: 1 turn, 0.125 in. (3.17 mm) 10, No. 26 wire
a: 0.300 in. (7.62 mm)
b: 0.25 in. (6.35 mml

• Or equivalent
Fig. 5- RF amplifier circuit for power-oulput test at 1 GHz.

324

Fig. 6- RF fundamental·frequency oscillator circuit for
1.68-GHz operation.

File No. 641 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

OOOBLJO

RF Power Transistors

Solid State
Division

41025 41026
3-Wand 10-W 1-GHz Emitter-Ballasted
Silicon N-P-N Overlay Transistor.s

i
~

c

>.'

....

¥.
'..

HF-41 package

H·1788

For Use in UHF/Microwave Common-Emitter Power Amplifiers,
Oscillators, and Frequency Multipliers

:i.'"

Features:
•
•
•
•
•

Designed for supply voltages of 25 to 30 V
Emitter-ballasting resistors
3-W output with 7-dB gain (min.) at 1 GHz, 28 V (41025)
10-W output with 6-dB gain (min.) at 1 GHz, 28 V (41026)
Ceramic-metal stripline package with low inductances and
low parasitic capacitances
• Suitable for stripline and micrqstripline circuits
parasitic capacitances and inductances that permit stable

RCA-41025 and 41026* are epitaxial silicon n-p-n planar
transistors with overlay multiple-emitter·site construction.
They are designed especially for equipment using 25- to 30-V

operation in the common-emitter configuration.

Ideal as a driver for the 41026, the 41025 can also be used
in large-signal applications. The use of emitter-ballasting resistors and the low-thermal-resistance package make the
41026 especially suitable for large-signal cw or pulsed appli·
cations at frequencies from 0.7 GHz to 1.3 GHz in stripline
and microstripline circuits.

collector supplies in uhf and microwave communications,
L·band microwave relay links, distance-measuring equipment,

transponders, and collision-avoidance systems.
The ceramic-metal stripline packages of these devices have low

*

Formerly RCA Dev. Nos. TA8647 and TA8648.

EMITTER-TO-BASE VOLTAGE
CONTINUOUS COLLECTOR CURRENT.
TRANSISTOR DISSIPATION:
At case temperature up to 75 0 C _
At case temperature above 75 0 C .
TEMPERATURE RANGE:
Storage and operating (Junction).
CASE TEMPERATURE (during soldering)
For 10 s max.

41026

41025

MAXIMUM RATINGS, Absolute-Maximum Values;
COLLECTOR-TO-BASE VOLTAGE
COLLECTOR-TO-EMITTER VOLTAGE:
With external base·to·emitter resistance
(RBE) = 10 n. ' _ ' _ ' . . .

.

.

.

.

.

.

.

.

VCBO

VCER

Derate linearly at

50

50

V

50

50

3.5
0.35

3.5
1.5

V
V
A

7.15
0.057

21
0.168

W
W/oC

-65 to +200

°C

230

°C

5-73

325

41025,41026 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 641

ELECTRICAL CHARACTERISTICS, at Case Temperature ITC) = 2SOC unless otherwise specified.

STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAGE
V dc
VCE

VBE

46

0

LIMITS

CURRENT
mA de
IE

IC

41025

UNITS

41026

MIN.

MAX.

MIN.

MAX.

-

2

-

2

mA

Collector Cutoff
ICES

Current

Collector-to-Base
Breakdown Voltage

V(BRICBO

0

5

50

-

50

-

V

Emitter-to-Base
Breakdown Voltage

V(BRIEBO

0.1

0

3.5

-

3.5

-

V

10

50

-

50

-

V

17.5

-

6

°C/W

Collector-to-Emitter
Breakdown Voltage
With external base·
to-emitter resistance
(RBEI = 10 n
Thermal Resistance
(Junction·to·Casel

V(BRICER

-

ROJC

DYNAMIC
TEST CONDITIONS

LIMITS

FREQUENCY
GHz

SUPPLY
VOLTAGE
(VCCI-Vdc

POE

I
1

2B
2B

3

Power Gain, POE = 3 W
= lOW

GpE

1
I

28

7

-

Collector Efficiency, POE = 3 W
= lOW

T)C

1
I

2B
2B
2B

50

-

-

50

-

Cobo

I MHz

-

-

5

-

12

CHARACTERISTIC
Output Power, PIE = 0.6 W
= 2.5W

Collector-to-Base Capacitance
VCB=30V

SYMBOL

41025

41026

MIN. MAX.

UNITS

MIN.

MAX.

-

-

-

W

10

-

6

-

dB

%
pF

TYPICAL APPLICA TlON INFORMA TlON
CIRCUIT

SEE FIG.

SUPPLY VOLTAGE

INPUT POWER

OUTPUT POWER

(VCCI-Vdc

(PIEI-W

(POEI-W

Microstripline 1-GHz Amplifier
(41025)

10

28

0.6

3.3

Microstripline l-GHz Amplifier
(41026)

11

28

2.5

11.0

Microstripline 1.0-to-l.2-GHz Oscillator
(41025)

12

2B

-

3.2

326

File No. 641 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41025, 41026

Fig. 1 - Block diagram of test arrangement for measuring
transistor performance.

COLLECTOR SUPPLY VOLTAGE (Vccl-28
CASE TEMPERATURE lTel· 25°C

-0

'<

I

0.7

0.8

0.9

1.0

FREQUENCY (f) -

1.1

1.2

13
92CS-20562

GHz
92CS- 2056.

'Fig.2 - Typical output power vs frequency for 41025 common-emitter
amplifier in test arrangement of Fig.t.

Fig.3 - Typical output power vs frequency for 41026 common-emitter
amplifier in test arrangement of Fig.t.

14

60

i'

1
'<
1
W

50

.0"-

..<>

f:
>

u

g>

z

~

u

ffi

'<

:r

40

~
~
~
~

~

"

~

~

"
0

COLLECTOR SUPPLY VOL rAGE (Vee)- 28 v
CASE TEMPERATURE (Tel =25°C
FREQUENCY (f) "'I GHz

0.1

0.2

0,3

0,4

0.5

~

60

12

i'

1

'<

I

W

,p

10

50

..<>

.0"-

>

u

z

~

~

~

u

:r

40

~

"
"

~
~

0

~

~

0

.:

COLLECTOR SUPPLY VOLTAGE (Vccl"Z8 V
CASE TEMPERATURE (Tel. 25°C
FREQUENCY (f I : I GHz

30

~

2
3
INPUT POWER (PIEI-W

0.6

INPUT POWER IPIEI-W
92C5-20563

Fig.4 - Typical I-6Hz output power and collector efficiency vs. input
power for 41025 in test arrangement of Fig. 1.

92CS- 20564

Fig.5 - Typical 1·6Hz output power and collector efficiency vs. input
power for 41026 in test arrangement of Fig. 1.

327

41025,41026 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 641
E ••
CASE TEMPERATURE t TC 1 -25-C
FREQUENCY (f ) • I GHz

.,

.
701

.,

OJ
•

.oE,

I

10

..0

•

.
.,.'"

I
..0

INPUT POWER (PIE) • 2.5 W
CASE TEMPERATURECTcl-25'"C
12 FREQUENCY (f )- I GHz

6

~

'"
sot;
o

0-

~

0-

"
0

14

"

16
18
COLLECTOR

20
22
24
26
28
SUPPLY VOLTAGE (YCCI-V

j

o

•

u

16

I.

20

22

24

26

28

COLLECTOR SUPPLY VOLTAGE (Vee) - V

92(5-20566

92CS- 20565

Fig.6 - Tvp;call·GHz output povver and collector efficiency vs. supply
I/O/rage for 41025 in test arrangement of Fig.t.

Fig.7 - Typical '-GHz output power and collector efficiency vs. supply
voltage for 41026 in test arrangement of Fig.t.

Flg.8 - Typical large-signal series input impedance and large-signal
collector load impedance VI. frequency for 41025.

Fig.9 - Typicallarge-signal series input impedance and large-signal
col/ector load impedance vs. frequency for 41026.

328

File No. 641 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41025, 41026.

fR.

Vee

MICROSTRIP MATERIAL:
1/32·INCH TEFLON FIBERGLASS

DIMENSION INCHES MILLIMETERS
1.900
48.26
A
2.18
B
0.086
2.18
0.086
C
11.94
D
0.470
,2.1B
E
0.b86
1.10
27.94
F
0.300
7.62
G
2.82
71.63
H
50.04
1.97
J
6.99
K
0.275
L
0.300
7.62
M
0.300
7.62
0.400
10.16
N
P
0.170
4.32
10.16
0.400
S

Cl. C3 =
C2. C4 =
CS. C6 =
RFC,. RFC2 =

30 pF. ATC 100·
1-10 pF. JOHANSON 29571000 pF. ALLEN·BRADLEY FA5C·
No. 32 wire, 5 turns 0.062 in. (1.57 mm)
dia., 0.300 in. (7.62 mm) long
RB = 10n

• Or equivalent

Fig.10-Microstr;pline circuIt for '-GHz power amplifier using 41025.

Vee

MICROSTRIP MATERIAL:
1/32·INCH TEFLON FIBERGLASS
DIMENSION INCHES MILLIMETERS
O.BBS
22.48
A
22.48
0.BB5
B
2.03
O.OBO
C
43.B2
1.725
0
13.84
0.545
E
2B.5B
1.125
F
22.10
0.B70
G
58.93
2.320
J
7.37
0.290
K
6.B6
0.270
L

Cl. C2 = 330 pF. ATC 100·
C3. C4 = 1000 pF. ALLEN·BRADLEY FA5C·
eS. Cs = 1 /IF. 50-V. electrolytic
RB
=0.030n
RFC,. RFC2= No. 32 wire, 5 turns
0.062 in. (1.57 mm) dia .. 0.300 in.
(7.62 mm) long

• Or equivalent

Fig. 1'-Microstripline circuit for '-GHz power amplifier using 41026.

329

41025,41026 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 641

Vee

92CS-20571

MICROSTRIP MATERIAL:
1/32·INCH TEFLON FIBERGLASS
DIMENSION INCHES MILLIMETERS
A
0.300
7.62
1.500
B
38.10
H
0.150
3.81

Cl. C2. C3· 470 pF feedthrough.
ALLEN·BRADLEY FACS·
C4· 1-20 pF. JOHANSON 4802·
CS· 0.3 - 3.5 pF. JOHANSON 4701·
C6· 1-10 pF. JOHANSON 4581·
Rl· 2.2kn
R2· 180
RB· 10 n

n

RFC1. RFC2. RFC3 = No. 32 wire, 5 turns
0.062 in. (1.57 mml
dia .• O.300 in. (7.62 mml
long
•

Or equivalent

Fig. 12-Microstripline circuit for 1.0- to 1.2-GHz oscillator using 41025.

SOLDERING INSTRUCTIONS

TERMINAL CONNECTIONS

When these devices are to be soldered into microstripline circuits, the transistor terminals must be pretinned in the region

TERMINALS 1 & 3 - EMITTER
TERMINAL 2 - BASE
TERMINAL 4 - COLLECTOR

where soldering is to take place. The device should be held in a
high·thermal·resistance support for this tinning operation. A
60/40 resin·core solder and a low·wattage (47 watts) soldering
iron are suggested for the pretinning operation. The case tern·
perature should not exceed 230°C for a maximum of 10 sec·
onds during tinning and subsequent soldering operations.

WARNING: The ceramic bodies of these devices contain
beryllium oxide. Do not crush. grind. or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

330

File No. 640 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

RF Power Transistors

ffilcraLJO
Solid State
Division

41027

41028

~-------, 3-W

and 10-W 1-GHz Emitter-Ballasted
Silicon N-P-N Overlay Transistors
For Use in UHF/Microwave Common-Emitter Power Amplifiers,
Oscillators, and Frequency Multipliers

~
~~0

Features:
•

Designed for supply voltages of 20 to 25 V

• Emitter-ballasting resistors
•
•
"
•

Load VSWR capability of 3: 1 at 1 GHz
3-W output with 6-dB gain (min.) at 1 GHz, 22 V (41027)
10-W output with 5.5-dB gain (min.) at 1 GHz, 22 V (41028)
Ceramic-metal stripline package with low inductances and
low parasitic capacitances
a Suitable for stripline and microstripline circuits

HF-41 Package

H·1788

RCA-41027 and 41028" are epitaxial silicon n-p-n planar

parasitic capacitances and inductances that permit stable

transistors with overlay

operation in the common-emitter configuration.

multiple-emitter-si~e

construction.

They are designed especially for equipment using 20- to 25-V
collector supplies in uhf and microwave communications,
L-band microwave relay links, distance-measuring equipment,
transponders, and collision-avoidance systems.

Ideal as a driver for the 41028, the 41027 can also be used in
large-signal applications. The use of emitter-ballasting resistors
and the low-thermal·resistance package make the 41028 especially suitable for large-signal cw or pulsed applications
at frequencies from 0.7 GHz to 1.3 GHz in stripline and

The ceramic-metal stripline packages of these devices have low

*

For~erlY RCA Dev. Nos. TA8649 and TA8650.

microstripline circuits.

COLLECTOR·TO·8ASE VOLTAGE

.

.

.

.

.

.

.

.

.

.

COLLECTOR-TO-EMITTER VOLTAGE:
With external base-ta-emitter resistance
(RBE) = 10 n . . . . . . . . .
CONTINUOUS COLLECTOR CURRENT.

TEMPERATURE RANGE:
Storage and operating (Junction).
CASE TEMPERATURE (during soldering)
For 10 s max.
....... .

VCBO

VCER

EMITTER-TO·8ASE VOLTAGE
TRANSISTOR DISSIPATION:
At case temperature up to 75°C.
At case temperature above 75 0 C .

41028

41027

MAXIMUM RATINGS, Absolute-Maximum Values:

Derate linearly at

45

45

V

45

45

V

3.5

3.5

V

0.35

1.5

A

7.15
0.057

21
0.168

W/oC

W

-65 to +200

°C

230

°C

5-73

331

41027,41028 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 640

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tci = 2!PC unless otherwise specified.
STATIC

LIMITS

TEST CONDITIONS
CHARACTERISTIC

SYMBOL

VOLTAGE
V dc
VBE
VCE

CURRENT
rnA dc
IE

IC

UNITS

4102B

41027
MIN.

MAX.

MIN.

MAX.

-

2

-

2

rnA

Collector Cutoff
ICES

Current

0

40

Coliector·to·Base
. Breakdown Voltage

V(BR)CBO

0

5

45

-

45

-

V

Emitter·to·Base
Breakdown Voltage

V(BR)EBO

0.1

0

3.5

-

3.5

-

V

45

-

45

-

V

-

17.5

-

6

oCIW

Collector·to·Emitter
Breakdown Voltage
With external base·
to-emitter resistance
(RBE) = 10 n
Thermal Resistance
(Junction·to·Case)

10

V(BR)CER

ROJC

DYNAMIC

TEST CONDITIONS

LIMITS

FREQUENCY
GHz

SUPPLY
VOLTAGE
(VCC)-Vdc

POE

1
1

22
22

3

Power Gain, POE = 3 W
= lOW

GpE

1
1

22
22

6

-

-

-

-

5.5

Collector Efficiency, POE = 3 W
= lOW

IJC

1
1

22
22

50

-

Cabo

1 MHz

-

-

CHARACTERISTIC
Output Power, PI E = 0.75 W
= 2.8W

Collector-to-Base Capacitance
VCB=30V

SYMBOL

41027
MIN. MAX.

41028

UNITS

MIN.

MAX.

-

-

-

W

10

-

-

50

-

5

-

12

-

dB

%
pF

TYPICAL APPLICA TION INFORMA TlON

CIRCUIT

SEE FIG.

SUPPLY VOLTAGE
(VCC) -Vdc

INPUT POWER
(PIE)-W

OUTPUT POWER
(POE)-W

Microstripline l-GHz Amplifier
(41027)

10

22

0.75

3.3

Microstripline l-GHz Amplifier
(41028)

11

22

2.8

11.0

Microstripline 1.0-,to 1.2-GHz Oscillator
(41027)

12

22

-

2

332

File No. 640

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41027,41028

..
I

FREQUENCY (f) -GHz

Fig. 1 - Block diagram of test arrangement for measuring transistor
performance.

COLLECTOR SUPPLY VOLTAGE tVCC 1"'22
CASE TEMPERATURE" 2S·C
Re- O •

14

12

Fig.2 - Typical output power VI. frequency for 41027 commonemitter amplifier in test arrangement of Fig. 1.

..

v

I

..

E

~

'"
~

;:;
'"

'"

~'"

..I

u

,.
u

10

z

§

~

'"
~

~

0.7

0.8

1.2
0.9
1.0
1.1
FREQUENCY (f l-GHz

:l

~

'If

8

0

1.3
92CS-20576

92.CS-20577

Fig.3 - Typical output power VI. frequency for 41028 common-

emitter amplifier in test arrangement of Fig. 1.

Fig.4 - Typical '·GHz output power and collector efficiency vs.
input power for 41027 in test arrangement of Fig. 1.

..I
...::>~

o

40

,
INPUT

POWER(PIE}-W

~...'"
8
COLLECTOR SUPPLY VOLTAGE (Vccl-.V

12.CS-20576

Fig.5 - Typical '·GHz output power and col/ector efficiency vs.
supply vDlta/JS for 41027 in test arrangement of Fig.t.

92CS.20!579

Fig.6 - Typical '-GHz outpUt power and collector efficiency VI.
supply voltage for 41027 in test arrangement of Fig. 1.

333

41027,41028 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

File No. 640

"I

.
.
~

"

o

I
FREQUENCY (f1-GHz

COLLECTOR SUPPLY VOLTAGE (Vee I - v
92CS_20580

Fig.7 - Typical I·GHz output power and collector efficiency ..s.

supply voltage (or 41028 in test arrangement of Fig.

t.

92CS-Z0581

Fig.S - Typical/arye-signal series input impedance and /argeo-signal
collector load impedance vs. frequency of 41027.

FREQUENCY Ifl-GHz
92CS-20582

FIg.9 - Typical/aTye-signal series input impedance and large-signal
collector load impedance vs. frequency for 41028.

\

334

File No. 640 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41027, 41028

fRO

Vee

MICROSTRIP MATERIAL:
1/32·INCH TEFLON FIBERGLASS
DIMENSION

I

A
B
C
D
E
F
G
H
J
K
L
M
N
P
S

INCHES MILLIMETERS
1.900
48.26
0.086
2.18
2.18
0.086
0.470
11.94
0.086
2.18
1.10
27.94
0.300
7.62
71.63
2.82
1.91
50.04
0.275
6.99
0.300
7.62
0.300
7.62
0.400
10.16
0.170
4.32
0.400
10.16

Cl, C3
C2, C4
C5, C6
RFC,. RFC2

= 30 pF, ATC 100·
= 1-10 pF, JOHANSON 2957= 1000 pF, ALLEN·BRAOLEY FA5C·
= No. 32 wire, 5 turns 0.062 in. (1.57 mm)
dia .. 0.300 in. (7.62 mm) long

RB =

lOS,

• Or equivalent

Fig.l0-Microscripline circuit for l-GHz power amplifier using 41027.

vee

50n

e,

~

L1

D~

MICROSTRIP MATERIAL:
1/32-INCH TEFLON FIBERGLASS
DIMENSION
A
B
C
D
E
F
G
J
K
L

INCHES MILLIMETERS
0.885
22.48
0.885
22.48
2.03
0.080
1.725
43.82
0.545
13.84
1.125
28.58
0.870
22.10
2.320
58.93
0.290
7.37
0.270
6.86

Cl, C2 = 330 pF, ATC 100·
C3, C4 = 1000 pF, ALLEN-BRAOLEY FA5C·

eS. Cs '" 1 IlF. SON, electrolytic
RB
= 0 to 30 Q
RFCl- RFC2= No. 32 wire, 5 turns
0,062 in.ll.S7 mm) dia., 0.300 in.
(7.62 mm)

long

• Or equivalent

Fig. l1-Microstripline circuit for l-GHz powerampfifier using 41028.

335

File No. 640

41027,41028

.,
J;

..

1J

/-"

EOUIVALENT

~

REPRESENTATION -

OF

Cot. OSCILLATION

FREQUENCY

92CS·20859

IS DETERMINED

PRIMARILY BY

C4 ADJUSTMENT.

MICROSTRIP MATERIAL:
1132·INCH TEFLON FIBERGLASS
DIMENSION INCHES MILLIMETERS
A
0.300
7.62
1.500
B
38.10
H
0.150
3.S1

Cl. C2. C3 = 470 pF feedthrough.
ALLEN·BRADLEY FACS.
C4 = 1-20 pF. JOHANSON 4802Cs = 0.3 - 3.S pF. JOHANSON 4701C6 = 1-10 pF. JOHANSON 4551·
Rl = 2.2kn
R2= lS0n
RB= Ion
RFC,. RFC2. RFC3 = No. 32 wire, 5 turns
0.062 in. (1.S7 mm)
dia .• 0.300 in. (7.62 mm)
long

·Or equivalent

Fig. 12-Microstripline circuit for 7.0- to 1.2-GHz oscUlatorus;ng 41027.

SOLDERING INSTRUCTIONS
When these devices are to be soldered into microstripline cir·
cuits, the transistor terminals must be pretinned in the region
where soldering is to take place. The device should be held in a
high·thermal·resistance support for this tinning operation. A
60/40 resin·core solder and a low·wattage (47 watts) soldering
iron are suggested for the pretinning operation. The case tern·
perature should not exceed 230°C for a maximum of 10 sec·
onds during tinning and subsequent soldering operations.

336

TERMINAL CONNECTIONS
TERMINALS 1 & 3 - EMITTER
TERMINAL 2 - BASE
TERMINAL 4 - COLLECTOR

WARNING: The ceramic bodies of these devices contain
beryllium oxide. Do not crush, grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

File No. 679 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

RF Power Transistors

IJC1CI8LJD

Solid State
Division

41038
7 SO-mW, 1.68-GHz Oscillator Transistor

TO-46

H-120S

Features:

TERMINAL CONNECTIONS

• Emitter·ballasting resistors
• 75D-mW oscillator power at
1.68 GHz (20 V)
• Collector connected to case
• For coaxial, stripline, and
lumped-element circuits

Lead No, 1 - Emitter
Lead No.2 - Base

Type 41038* is an epitaxial silicon n·p·n planar transistor with
overlay multiple·emitter·site construction and emitter·ballasting
resistors. Intended applications for this transistor include

Lead No.3 - Collector. Case

microwave communications, relay links, distance-measuring
equipment, collision-avoidance systems, and low-cost radiosonde service.

=II Formerly 08\1. No. T A8340.

MAXIMUM RATINGS, Absolute·Maximum Values:
V
V

3.5

EMITTER·TO·BASE VOLTAGE .......................................... - VEBO
TRANSISTOR DISSIPATION:
PT
At case temperatures up to 100°C ....................................... .
At case temperatures above 100°C ....................................... .

V

45
21

COLLECTOR·TO·BASE VOLTAGE .. _......... - ................ - .......... VCBO
COLLECTOR·TO·EMITTER VOLTAGE ....................... - ............. VCEO

w
wfc

.3.1
Derate at

TEMPERATURE RANGE:
Storage and Operating (Junction)

0.031

°c

-65 to 200
FREQUENCY (tl-I.6B GHz
CASE TEMPERATURE (Te) -25-C

cc

SUPPLY VOLTAGE tV )-20V .
CASE TEMPERATURE (TC )-2S-C

'"I

.

1l
-- 0.8

~

.. 06

~

.S

G.

.

~ 0:4

0.4

o

0.'
0 .•

0.6

~

0.2

1.1

1.2

1.3

/.4

/.5

/.6

1.7

1.8

FREQUENCY (0- GHz

12

14

16

,.

20

SUPPLY VOLTAGE (VCC1-V
92CS-22384

Fig.1 - Typical output power vs. frequency for 41038 oscillator in test
arrangement of Fig. 5.

Fig.2 - Typical output power vs. supply voltage for 41038 osciJIator in
test arrangement of Fig. 5.

41038 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - File No. 679

ELECTRICAL CHARACTERISTICS at Case Temperature (TcJ = 2fJC

TEST CONDITIONS

Static
CHARACTERISTIC

SYMBOL

VOLTAGE

CURRENT

Vdc

mAde
IE

VCE VBE

IB

Colleetor Cutoff Current

ICES

Coliector·to·Base Breakdown Voltage

V(BR)CBO

0

Emitter·to·Base Breakdown Voltage

V(BR)EBO

0.1

Thermal Resistance (Junction·to·Case)

ROJC

Dynamic
CHARACTERISTIC

SYMBOL

Common·Coliector Oscillator
Output Power

POB

Oscillator Circuit Efficiency

110

Colleetor·to·Base Capacitance

Cobo

40

0

MIN.

IC

UNITS

MAX.

-

2

mA

5

45

-

V

0

3.5

-

V

-

32

°CIW

0

POWER

SUPPLY

OUTPUT

VOLTAGE

FREQUENCY

(POB)-W

(VCC)-V

GHz

0.75

LIMITS

LIMITS

UNITS

MIN.

MAX.

-

20

1.68

0.75

20

1.68

20

-

%

-

4

pF

1 MHz

30(VCB)

W

1000, CASE TEMPERATURE (Tcl ·Ioo·e

..

.,
I

I

U

I

...z

I

I

2

100

a:

0.&

0

~

~

~ 0.4

::::

0

u
0.2

•
•

40

60

Fig.3 - Typical output power vs. case temperature for 41038 oscillator
in test arrangement of Fig. 5.

RED SCANNING
TECHNIQUES

2

•

.••

•

• • •

100

92CS-2U8Z

Fig.4 - Maximum operating area for forward~ased operation.

92CS-22387

Fig.5 - Tesfarrangementformeasurementofoutputpower (rom 41038

338

I I
NOTE: TJS IS DETERMINED BY

21 V--<

92CS-22385

oscillator.

(TJS)-200·C

10
COLLECTOR-TO-EMITTER VOLTAGE (VCEl-Y

CASE TEMPERATURE fTc l-·C

I

TEMPERAT~RE

USE OF INFRA-

·
10

I

-;jOT-SPOT

~

OJ

a:
B

.,

ffi

f

I

I

Ie (MAX.) CONTINUOUS

!j

}_ 0,8
...

•
•

E

File No. 679 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

41038

R3
R2
Vcc·- 20V

Cl:
C2:
Cl.C4:
RFC:
L:

Rl:
R2:
Rl:
Xl:

O.l· l.5 pF air piston capacito~ Johanson 4700 or equivalent
5 pF chip capacitor. ATC·l00 or equivalent
1000 pF feedthrough capacitor. Alien·Bradley FA5C or equivalent
choke. 0.12 /tH. Nytronics or equivalent
0.150·in. (l.8 mm) transistor lead length
0.82 n. 2 watt
o . 500 n. 2 watts
2.2 k.l'!. 1 watt
Produced by removing upper copper layer from 1/l2·in. (0.79·mm)
Teflon·fiberglass double·clad circuit board (f = 2.6).
Fig.6 - L-band oscillator circuit using 41038.

RFe

1

0·40
10.21

xI
RI

C1rrC2

RFe
RFe

I

J

5011
t--E)0UTPUT

C5

1.05
f.(Z6.71

1
-=-

e3~
R2

R3

TUNING

VOLTAGE
V cc =-20 V

(0

v MAX.)

Cl, C2, Cl: 1000 pF feedthrough,Filtercon SMFB·Al or equivalent
2.2 pF, two l·pF ATC·l00 or equivalent in paraliel
C4:
C5:
O.l· l.5 pF, Johanson 4700 or equivalent
Rl:
10 n, 1/2 watt, carbon
0 - 500 n, 2 watts
R2:
Rl:
2.2 kn, 1/2 watt, carbon
D:
variable·capacitance diode, 7· 15 pF across tuning voltage range
L:

loop of transistor base lead

:
0.15
(l.81)

rL

.10.15 I

~(l.81)'"
Xl:

produced by removing upper copper layer from 1/l2·in. (0.79 mm)
Teflon·fiberglass double·clad circuit board (f = 2.6).
92CM-223B9

Fig.7 - 950-MHz voltage-controlled oscillator.

339

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 764

OO(]3LJD

RF Transistors

Solid State

Division

41039
Silicon N-P-N Overlay Transistor
For VHF Broadband Amplifiers in CATV and MATV Equipment

Features:
• Low Device Noise Figure:
200-MHz narrow-band (30 mAl = 3 dB max.
60-MHz narrow-band (30 mAl = 2 dB typo
50-25O-MHz broadband = 6.5 dB typ_
• High Gain:
GpE (200 MHz. 30 mAl = 15 dB min.

JEDEC TO-39

H·1381

GVE (50-250 MHz. broadband I =10 dB typo
fT (30 mAl = 1.8 GHz min.

RCA-41039* is an epitaxial silicon n-p-n planar transistor
employing overlay emitter-electrode construction_ It is intended for smali-signal applications where both large dynamic
range and high gain are needed_

• Low Distortion:
Cross-modulation (40 dBmV. 17 V, 60 mAl = -67dBtyp.
IMD (40 dBmV, 17 V, 60 mAl = -75dB typ_
• Collector-to-Base Time·Constant:
(f = 31.9 MHzl = 7 ps typo

* Formerly RCA Dev. No_ TA8865.
MAXIMUM RATINGS, Absolute-Maximum Values:

COLLECTOR-TO-BASE VOLTAGE __ • ____ • _________ .• ________________ ... ___. _____________ _

V CBO

40

V

V CEO

25
3_5

V

0.25

A

COLLECTOR-TO-EMITTER VOLTAGE:

With base open ................................................................... .
EMITTER-TO-BASE VOLTAGE ___ •. _• _• __ •• __ . _________________________________ .. _____ _

V EBO

CONTINUOUS COLLECTOR CURRENT

IC

TRANSISTOR DISSIPATION:

PT

V

..................................................... .

2_5

W

At case temperatures above 7SoC ....................................... .Derate linearly at

0_02

W/·C

At case temperatures up to 7SoC

TEMPERATURE RANGE:
Storage & Operating (Junction) ...........••.•....••...................................

-65 to 200

·C

LEAD TEMPERATURE lOuring soldering):

At distances ~ 1/32 in. (0.8 mml from seating plane for 10 s max ....................•.........

230

·C

TERMINAL CONNECTIONS
Lead 1 - Emitter

Lead 2 - Base
Lead 3 - Collector. Case

340

2-74

File No.764 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

41039

ELECTRICAL CHARACTERISTICS, At Case Temperature ITci = 2!t'C
STATIC
TEST CONOITIONS

CHARACTERISTIC

SYMBOL

DC

DC

Voltage

Current

V

mA
V CE

V CB

Collector-Cutoff Current

ICBO

IE

UNITS
IC

Collector-ta-Base Breakdown Voltage

V(BR)CBO

Emitter-ta-Base Breakdown Voltage

V(BR)EBO

0.1

Min.

Max.

-

100

"A

1

40

-

V

0

3.5

-

V

0

18
0

Collector-ta-Emitter Sustaining Voltage:

IB

LIMITS

VCEO(sus)

0

20

25

-

V

Collector-ta-Emitter Saturation Voltage

VCE(sa.)

10

100

-

0.25

V

DC Forward-Current Transfer Ratio

hFE

50

60

350

-

50

With base open

15

Thermal Resistance:
(Junction-ta-Case)

ROJC

°C/W

DYNAMIC
TEST CONDITIONS

CHARACTERISTIC

SYMBOL
V CB

Small-Signal, Common-Emitter

Power Gain If = 200 MHz)

DC

Voltage

Current

V

mA
VCE

IE

IB

LIMITS
UNITS
IC

Min.

Max.

-

G pE

15

30

15

NF

15

30

-

G VE

17

60

9.5

-

dB

CMD

17

60

-62

-

dB

15

30

1.8

-

15

60

2

-

-

2.5

Noise Figure (Measured)

If = 200 MHz) See F;g. 3

DC

3.28

dB

dB

Wideband Voltage Gain

If = 50·250 MHz) See Fig. 4
12-Channel Cross Modulation

Distortion If = 50-250 MHz;

output level

=

40 dBmVI

See Fig. 4
Gain-Bandwidth Product
fT
(f = 200 MHz)

Collector-to· Base Capacitance
(f= 1 MHz)

Cabo

30

GHz

pF

a Because of insertion loss of input test circuit, device noise figure is approximately 0.2 dB less than measured.

341

41039 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 764
COLLECTOR-TO-EMITTER VOLTAGE IVCE). 15V

COLLECTOR-lO-EMITTER VOLTAGE IVCE). ISV
CASE TEMPERATURE IT c). 2S·C

FREQUENCY (f)- 200 MHz

SOURCE RESISTANCE IA S )·SOS1
CASE TEMPERATURE ITe )·25ec

.
~
.

I

i

•

~

~

z 2.S

4

.... V

~

..

'" •
G

.
;;;

2

.... V

~

~

I.S

0
20

40

60

10

COLLECTOR CURRENT I Ie l-mA

2

. .

92CS-Z355ia'

Fig. 1 - Typical measured narrow-band noise figure vs. collector current.

6
2
250
100
50
FREQUENCY If) - MHz

.

6

•

1000

92CS-Z3553

Fig. 2 - Typical measured narrow-band noise figure VI. frequency.

Fig. 3 - Noise-figure test setup.

BROADBAND AMPLIFIER
UNDER TEST (SEE FIG·S
FOR CIRCUIT)

ADJUST 12- CHANNEL
GENERATOR + 40 dBmV
PER CHANNAL

92CS-23555

Fig. 4 - Cro$$-modulation-.ciistortion setup.

342

P'

/

,0

g

~

~

/

File No. 764 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41039

40·

o·

30·

10·

20"

30·

40·

70"

80"

80"

90·

100·

110·

140·

1500

1600

1700

180·

1700

160"

150"

140·
92CS- 23695

Fig. 5 - Typical transmission coefficients.

Cl: 10 pF. disc ceramic
C2: 2,3-14.2 pF. E. F. Johnson 160·170"
C3: 3-35 pF, AReO 404*

C4, C5: 1000 pF, feedthrough
C6: 1000 pF. disc ceramic
C7. C8: 0.9·7 pF. AReO 400*
L 1: RF choke, Ferroxcube #VK200-19/4B*

L2: 2 turns No. 12 wire, 0.25 in.16.35mml
10.0.25 in. 16.35 mmllong
L3: 3 iurns No. 14 wire. 0.25 in. (6.35 mm)
ID, 0.45 in. 111.43 mm) long, tapped
at '-1/2 turns
L4: 5·1/2 turns No. 14 wire, 0.25 in.
(6.35 mmllD. 0.5 in. 112.7 mmllong
R1: 220
R2: 200

n. 1/2 W. carbon
n. 1 W. carbon

• Or equivalent

Fig. 6 - 20D-MHz narrow-band amplifier.

343

41039 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 764

Fig. 7 - Typical reflection coefficients.
C2

..

~t-~-----<~------o ov

.,

~3~~~~T~:V:~:~~':~:: VOLTAGE (VCE)eI7
CASE TEMPERATURE lTC )-25-C

TI

v

C5

LI

RS

c!

C6

9ZCS-Z3559

Cl.3,4,5: 0.001 ~F. disc ceramic
C2: O.2pF.discceramic
C6: 18 pF. disc ceramic
Ll: O.22I8

Fig. 3 - Schematic diagram of 3.2-GHz oscillator circuit.

92CS-23959

Fig. 4 - Schematic diagram of 4.36-GHz oscillator circuit_

92CS-22387RI

Fig. 5 - Test arrangement for measurement of output power from 41044 oscillator.

347

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 790

RF Power Transistors

ffil(]3LJD
Solid State
Division

RCA061 0-30

30-W, Broadband, 620-to-960-MHz,
Emitter-Ballasted,. Gold-Metallized Transistor
Features:
•

RCA

HF~55

Package

GIGAMATCH stripline package:
Internal input·matching network; ZIN '" (10 + jO) n
External shunt matching at collector; ZOUT '" (6 + jO)
with shunt resonance

n

• Emitter·ballasting and low ROJC for added reliability
• Suitable for broadband operation (620 - 960 MHz)

H·1822

•

Gold metallization with barrier-layer protection

Type RCA061 0-30· is a multicell epitaxial silicon n-p-n planar
transistor with overlay emitter construction. It uses integral
silicon emitter-site ballast resistance for improved ruggedness

and increased overdrive capability. internally mounted MOS
capacitors for input matching, and gold metallization with barrier-layer protection for improved reliability. The RCA061 0-30
is intended for high-power broadband uhf amplifiers.

The unique external shunt tuning is made possible by two
additional leads from the collector. These leads allow the
circuit designer to tune the output capacitance (COB) for
optimum performance over a particular frequency range.

Approximately 75 per cent of the required inductance for
full-bandwidth operation is contained within the package;
the external circuit provides the additional inductance in the

form of the two lengths of stripline that can be terminated to
the ground plane by de blocking capacitors.
For narrow-band operation the RCA0610-30 can be used without collector shunt tuning by clipping off the two external

shunt . leads.
•

Formerly RCA Dev. No. TA8923.

MAXIMUM RATINGS, Absolute-Maximum Values:
eOLLEeTOR-TO-BASE VOLTAGE.

50

V

EMITTER-TO-BASE VOLTAGE.

3.5

V

TRANSISTOR DISSIPATION:

At case temperature up to 7SoC

50

W

At case temperature above 75°C, derate at

0.4

w/oe

TEMPERATURE RANGE:

Storage and Operating (Junction)

348

.

.

.

-65 to +200

7-74

File No. 790 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA0610·30
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 2!PC

STATIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Coliector·to·Base Reverse Current

ICBO

DC Collector
Voltage (V)

DC Current
(rnA)

VCB

IE

28

0

IC

LIMITS
Min.

5

mA

-

V

V(BR)CBO

0

25

50

Emitter·to·Base Breakdown Voltage

V(BR)EBO

0.5

0

3.5

(Junction-to-Case)

Max.

-

Coliector·to·Base Breakdown Voltage

Thermal Resistance

V

-

ROJC

UNITS

2.5

°C/W

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Output Power
(PIB = 4.75 W)
Power Gain
(POB =30W)
Collector Efficiency
(POB =30W)

(f) -MHz

LIMITS

(Vccl- V

Min.

Max.

UNITS

POB

620 - 960

28

30

-

W

GPB

620 - 960

28

8

-

dB

1/C

620 -960

28

55

-

%

Cabo

1 MHz

-

30

pF

Coliector-to·Base Capacitance
(VCB = 30 V)

DC Collector
Supply Voltage

Frequency

COLlECTOR SUPPLY VOLTAGE (Vcc)-28V
OUTPUT POwER I Pos) ·30 W

z
.!.

THIS SHUNT LENGTH PROVIDES AN
OPTIMUM MATCH FOR RESTRICTED-

~

BANDWIDTH OPERATION BY BRINGING
THE COLLECTOR LOAD REACTANCE

'"

l;

.
"
..iliffi...

~ 0.100

TO 10 AT CENTER FREQUENCY fC.

rMIN+'MAX

Ie·

z

2

D.Ose

~

'"
a
600

700

800

900

1000

CENTER FREQUENCY !te,-MHz
~2CS-24281

Fig.' - Use of external shunt leads to tune the output capacitance
of RCA061(J.30.

Fig.2 - Typicsl optimum length of shunt. in external col/ector

circuit v.r. center frequency.

349

RCA0610-30 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No_ 790

INPUT POWER 'PIal- 4.7 W FOR Vee -28 V
- ~.2 W FOR VCC-24V
EXTERNAL SHUNT LENGTH (U-O.040IN.
.
(I.02mm)
CASE TEMPERATURE fTc)- 25-C

COLLECTOR SUPPLY VOLTAGE (VCc):r28 v
EXTERNAL SHUNT LENGTH U.l -0.040 IN.
(I.02mm)
CASE TEMPERATURE (Tel" 25·C
~

~

50

,p
ffi

40

.~

30

~

~

-1..
~o

4·5

'"'"

3·5

"it.

2.5

"o

u

INPUT POWER (PIS'" 1.5 W

~
1;

POB FOR COLLECTOR SUPPLY VOLTAGE CYccl-28 V

40

z

'"
u

POB IVCC-24V)

30

l::

~~A~'
~c\·cc" .

'"'"

70~

~CC-2.BVl

~
~

20

.

1

50

0

608
o
600

700

800

1000

900

600

FREQUENCY If I-MHz

700
800
FREQUENCY (f1-MHz·

92CS-2428a

92CS-24289

Flg.4 - Typical tuned output power and collector efficiency VI.
frequency for RCA06tO-30 in the test let-up of Flg.B.

Fig.3 - Typical tuned output power vs. frequency for RCA0610-30
in the test set-up of Fig.B.

INPUT POWER (PIS)- 4·5 W
COI!LECTOR SUPPLY VOLTAGE (Veel: 28 v
EXTERNAL SHUNT LENGTH Il)=0.040 IN·

'0
1000

900

,~III~

INPUT
POWERSUPPLY
(PIa)e4.5W
COLLECTOR
VOLTAGE (Vce). 28 V
EXTERNAL SHUNT LENGTH (II- 0·040 IN .
(1.02 mm)
CASE TEMPERATURE ITc)e 25-C

..
1

.

~

u

-1.

.
.

50

1

40

>
u

u

..0

'"'"~

..

z

'"U

§

30

600
CASE TEMPERATURE CTc ) _·C

RCA061~O

92CS-2429I

v

.

10 EXTERNAL SHUNT LENGTH (I):rg.•g~~~j
CASE TEMPERATURE (Te). 2S·C

1

..
u

GpB

600

700

BOO

50
1000

900

Fig.6 - Typical broadband output power and collector efficiency vs".
frequency for RCA06tD-30 in the circuit of Fig.tt.

in the test set-up of Fig.B.

OUTPUT POW R (POB = 30 W
COLLECTOR Si:J~PLY VOLTAGE 1VCC)-28

BOO

FREQUENCY (f)-MHz

Fig.5 - Typical tuned output power and col/ector efficiency VI. case

temperature for

700

900

50
lOGO

FREQUENCY (f)-MHz

92CS-24293
92CS-24292

Fig. 7 - Typical broadband power gain and collector efficiency VL
frequency for RCA06ttJ.30 in the circuit of Fig.tt.

350

Fig.8 - Block diagram of test·,et-up for I1I88SUrlng
tuned performance of RCA06tD-30.

File No. 790 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA0610-30

92CS-24294
Fig.9 - Typicallarge.signal collector load impedance of RCA0610-30.

92C5-24295
Fig. to -

Typ;callar~$ignal input impedance of RCA061tJ.30.

351

RCA0610-30

- - -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No_ 790

co

I

92CS-24296

NOTE: Capacitors Cl and C2 are piaced directly from pads to ground

via wrap-around or low-inductance plated-through holes.
C, - C5: 470 pF Vitramon Microwave Chip Capacitors (Vitramon. Inc.

Box 544, Brldgepon, Ct. 066011·
Cs: 25 IlF, 50 V, electrolytic
L1 • L2 : See details of construction (Flg.12)

• Or equivalent.
Fig. "

- 620 - 1000 MHz broadlmnd 3l1-wstt smplifisr circuit.

1.365
(34.67)

0.170
14.32)

Ila1~~~~~~~l_0.155
(3.941
I

+----+--±:::=!!I7J,'7"'...-r.,..uI'~.l'\....::::=-?ie.~)

0.680

(I~7L2_7_)____~~______Tft~~~~~~~~~--~~~~

II
WRAP-AROUND OR
PLATED-THROUGH
GROUND PLANE

Dielectric material: 1/32-in. (O.79-mm) Teflon-fiberglass double-clad
Ll and L2 are produced by removing up-

circuit board Ie = 2.6),

per copper layer to dimensions shown.

Fig. 12 - Construction details for L t and L2 in 620 - 1000 MHz
bf'Olldband amplifier circuit of Fig. 11.

TERMINAL CONNECTIONS
Terminal 1 Terminal 2 Terminal 3 Terminal 4 Terminal 5 -

352

Emitter
Base
Shunt
Collector
Shunt

WARNING: The ceramic heat-sink portion of this devic~
contains beryllium oxide. Do not crush, grind. or abrade
this portion because the dust resulting from such action
may be hazardous if inhaled. Disposal should be by burial.

RCA2001 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 759
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 2fjOC
STATIC

CHARACTERISTIC

TEST CONDITIONS
Voltage
Current
Vde
mAde

SYMBOL

VCE
Collector Cutoff Current:
With emitter open

ICBO

VCB

IE

28

0

LIMITS
RCA2001

IC

UNITS

MIN.

MAX.

-

0.5

rnA

Collector-to-Base Breakdown
Voltage

V(BR)CBO

0

5

50

-

V

Emitter-to-Base Breakdown
Voltage

V(BR)EBO

0.1

0

3.5

-

V

-

25

°e/W

Thermal Resistance:
(Junction-to-Case)

ReJC

DYNAMIC

CHARACTERISTIC

VOLTAGE
Vdc
VCC

SYMBOL

TEST CONDITIONS
FREQUENCY
POWER
GHz
W
f
PIB
POB

LIMITS
RCA2001

UNITS

MIN.

MAX.

1

-

W

Output Power
large-Signal
Common-Base
Power Gain
Collector Efficiency

POB

28

2

GpB

28

2

1

7

-

dB

'lC

2B

2

1

30

-

%

Collector-to-Base
Output Capacitance

Cabo

VCB = 28

1 MHz

-

3

pF

0.2

COLLECTOR SUPPLY VOLTAGE (Vee)- 28 v
CASE TEMPERATURE (TC}-2S-C

COLLECTOR SUPPLY VOLTAGE (Vecl-20Y

EMITTER RESISTANCE (R.) -0.0

FREQUENCY (1)·2 GHz
EMITTER RESISTANCE (R.)-4.7.Q

CASE TEMPERATURE (TC)· 2S·C

;0

;0

~a:

~

I 2_,

I
0-

I

i

PZS-0.2 W

I."

O.15W

~

o

0.05

''';
50~

I

1;
z

4 ....
u

0-

~

~

O.IOW

!;

I.'
1.25

!;
o

or

0.'

40 ...

0.75

~
0.5

35

1.2

1.4

1.6

1.8

2.2

2.4

92CS-2339T

354

o

o

0.0.

0.1

0.15

INPUT POWER (PIB)-W

FR~QUENCY (f 1- GHz

Fig. 1 - Typical output power vs. frequency.

2.6

~

~u

0.26

0.2

'2cs-un,

Fig.2 - Typical output POwtN' and collector efficiency If$.
input powerat2GHz.

File No. 759 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA2001

INPUT POWER (Pla)-O.2 W
CASE TEMPERATURE (TC)- 2S·C
1.75 FREQUENCY If)· 2 GHz

.

;0

~

1.5

~

1.25

.

-

I

~,.
"z
45 "'
it"

~...
~

40 ~

~ 0.75

o

0.5

35

~
~

cJ

0.25
12

16
18
20
22
24
26
COLLECTOR SUPPLY VOLTAGE 1VCC)-V

14

30"
28

92CS-23399

Fig.3 - Typical output power and collector efficiency vs.

supply voltage.

Fig.4 - Input and output impedances.

355

RCA2001 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 759

DEVICE
UNDER TEST

RFC

C21

RFC

C3~

RI

Fig.6 - Block diagram of test set-up for measurement of

performance from
amplifier.

Vee "+28 v

'0 or 2-GHz common-base

9ZCS-Z1553

e1. C4: 0.35-3.5 pF, Johanson 4702 or equivalent
C2. C3: 470 pF feedthrough, Allen-Bradley FB28 or equivalent
L 1: Microstripline, 0.031 in. (0.79 mm) Teflon-Fiberglas.
0.18 in. (0.45 mm) wide, 0.350 in. (0.889 mm) long,
€=

L2:

2.6

Microstripline,O,031 in. (0.79 mm) Teflon·Fiberglas,

0.18 in. (0.45 mml wide, 0,66 in. (16.76 mm) long,
€= 2.6
RFC: 3 turns No. 32 wire, 0.0625 in. (1,58 mm) 10,0.25 in.
16.35 mml long
Rl:

4.7

n

TERMINAL CONNECTIONS
Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector

Fig.S - 2·GHz test circuit for both types.

WARNING: The ceramic body of these
beryllium oxide. Do not crush. grind,
portions because the dust resulting from
be hazardous if inhaled. Disposal should be

356

devices contains
or abrade these
such action may
by burial.

File No. 801 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

OO(]500

RF Power Transistors

Solid State
Division

RCA2023-12
12.5-W, 22-V, Broadband (2.0-to-2.3-GHz)
Emitter-Ballasted Transistor
Features:
• GlGAMATCH stripline package:
Internal input·matching network (50 !1 nominal)
Internal shunt tuning at collector
• GpB = 7 dB (min.) at 22 V. 2.0 to 2.3 GHz
• Emitter ballasting and low ROJF for reliability and ruggedness

RCA H F·50 Package
D

H-180BR1

Broadband operation (30()'MHz bandwidth)

• Infinite load-VSWR capability at 22 V, 2.0 to 2.3 GHz
• POB = 15 W (typ.) at band edge

The RCA2023·12 is an epitaxial n·p:n planar transistor with
overlay emitter construction. It employs integral silicon
emitter·ballasting resistors for improved ruggedness and in·
creased overdrive capability. The RCA2023·12 is internally
matched for use in amplifier applications in the range from
2.0 GHz to 2.3 GHz with a 50·ohm (nominal) source and a

supply voltage of 18 to 26 volts. It is intended for high·power
broadband microwave communications, primarily telemetry
and relay links in the 1.9·to·2.4·GHz range. The low thermal
resistance of the hermetic stripline package of this transistor
makes it suitable for large'signal cw or pulsed applications in
stripline, microstripline, and lumped-constant circuits.

MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR·TO·BASE VOLTAGE .....•.....•.....•..................•............••........
EMITTER·TO·BASE VOLTAGE ............................................................. .
TRANSISTOR DISSIPATION:

V CBO
V EBO
PT

At case temperature up to 75:C
At case temperature above 75 ~ .•.•...•.....•............•................... Derate linearly at
T~MPERATURE

45
3.5

V
V

62.5
0.5

w/c

w

RANGE:

Storage and operating (Junction) ......•.•........•.•.....•.......•..............•..•........
LEAD TEMPERATURE (During soldering):
At distances ~ 0.02 in. 10.5 mml from seating plane for 10 s max .............................•.....

°c

230

COLLECTOR SUPPLY VOLTAGE Wec)=

TERMINAL CONNECTIONS

°c

-65 to +200

EMITTER RESISTANCE (Re ). 0
4:1 CASE TEMPERATURE (TC) -25°C
INPUT POWER (P .2.5 W

zz V.
i

.

Terminal 1 - Collector
Terminals 2 & 4 - Base
Terminal 3 - Emitter

:1

2:1

WARNING:
The ceramic heat·sink portion of this
device contains beryllium oxide. Do not crush, grind, or
abrade this portion beca~se the dust resulting from
such action may be hazardous if inhaled. Disposal should
be by burial.

1:1

2.1

2.2.

FREQUENCY { f l - GHz

2.3

2.4

92CS-24~BO

Fig. 1 - Typical input VSWR for RCA2023-12 driven by a
5D-ohm (nomina/) source.

8·74

357

RCA2023-12 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ FileNo. 801
ELECTRICAL CHARACTERISTICS. at Case Temperature (TC) = 25"C
STATIC

TEST CONDITIONS
SYMBOL

CHARACTERISTIC

Collector Cutoff Current

ICBO

LIMITS

Current
mAde

Voltage
Vde

UNITS
MAX.

IC

MIN.

0

-

1.5

mA

45

-

V

-

V

VCB

IE

22

Coliector·to·Base Breakdown Voltage

V(BR)CBO

0

15

Emitter·to·Base Breakdown Voltage

V(BR)EBO

0.5

0

Thermal Resistance (Junction·to·Flange)

RoJF

3.5

-

°CIW

2

DYNAMIC

TEST CONDITIONS
CHARACTERISTIC'"

SYMBOL

VOLTAGE
Vde

FREQUENCY
GHz
f

PIB

POB

22

2.0 -2.3

2.5

GpB

22

2.0 -2.3

71C

22

2.0 -2.3

2.5

22

2.0-2.3

2.5

VCC
Output Power
Power Gain
.Collector Efficiency·
InputVSWR

LIMITS

POWER
W
POB

MIN.

12.5
12.5

MAX.

-

W

7

-

dB

40

-

'l(,

-

3:1

~easured in the test circuit of Fig. 6 and the test set·up of Fig. 7.

Normalized to 50 n
Collector Supply VollBge (Veel
Emitter Resistance (Re) - 0 ".
Input Power (Plsl - 2.5 W

~

22 V

Fig. 2 - TypieJIIlsf/llHlgnsJ input imped_ and collllCttH .
,000d impedsnce for RCA2023-12.

358

UNITS

File No_ 801 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ RCA2023-12
COLLECTOR SUPPLY VOLTAGE tveel =22 V~1:l:

24 COL.LECTOR SUPPLY VOLTAGE (Vee) ~ 22 V

EMITTER RESISTANCE (Rei =a
SOURCE IMPEDANCE (Zs) = 50 n

_

,H+
::i

18

'"I

-

18

;

16

- -

- -

20 .',N.f.UT PO'vVER (PIS) = 2.5 W

'"I

l-e"-

=>
0

4.

14

~
Ir

~

8
40

10

12

35

10

2.1
92CS-24581

Fig. 3 - Typical narrow-band output power of RCA2023·12 as
a function of frequency.

92CS-24582

measured in the circuit of Fig. 7.

<1.82)

50n

26 EMITTER RESISTANCE (ReI = 0
SOURCE IMPEDANCE IZs)" 50.n

rot,

INPUT

'" 24
22

::i
~

20

§

18

~

f1

_ 0.072

CASE TEMPERATURE (TC) .. 25°C

~

2.3

Fig. 4 - Typical broadband performance of RCA2023-12,

FREQUENCY (fl· 2 .. 15 6Hz

g

2.2

FREQUENCY (f)-GHz

0.50
(12.7)

r

X,

'Ie

I.

92CS-24584

2
~

00

~

~

~

COLLECTORISUPPLY VOLTAGE (Vee I - V
92CS-24583

Fig. 5 - Typical narrow-band output power and collector
efficiency of RCA2023·12~ as functions of

collector supply voltage.

Cl, C2: 10 pF. ATC-l00 or equivalent
RFC: 0.7 in. (17.8 mm) of No. 30 wire (lay on circuit board)
C3: Filtereon, Allen-Bradley SMFB-Al or equivalent
Xl. X2: l/32-in. (O.79-mm) Teflon-fiberglass double-clad circuit
board (e = 2.6) lines. Xl and X2 are produced by removing upper
copper layer to dimensions shown.
Note 1: Trim stub section length for optimum performance at 2.3 GHz
(or use capacitive tuning screw).
Note 2: Trim transformer width for optimum performance at 2.0 GHz.
Fig. 6 -

2.o-to-2.3-GHz test circuit.

Fig. 7 - Test set-up tor rf measurements.

359

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 765

OOCD5LJl]

RF Power Transistors

Solid State

Division

RCA2310
10-W, 2.3-GHz, Emitter-Ballasted
Silicon N-P-N Overlay Transistor
For Use in Microwave Power Amplifiers,
Fundamental-Frequency Oscillators, and Frequency Multipliers
Features:

RCA HF·46
(RCA HF-46 can also be supplied
without flange upon request.)
H-1796R1

•
•
•
•
•

10-W output with 8.2-<18 gain (min.) at 2.3 GHz, 24 V
Load·VSWR capability of 10:1 at 2.3 GHz
Emitter·ballasting resistors
Stable common·base operation
Especially suitable for S-band telemetry use

RCA2310· is an emitter·ballasted epitaxial silicon n·p·n planar
transistor that uses overlay multiple·emitter-site construction.
It is designed especially for use in microwave communications,
L· and S·band telemetry, microwave relay links and trans·
ponders in the frequency range of 1.5 GHz to 2.4 GHz.
The ceramic·metal stripline package of this device has low
parasitic capacitances and inductances, which afford stable
operation in the common·base configuration.

• Ceramic·metal hermetic stripline package with low inductance and low parasitic capacitances
• For stripline, microstripline, and lumped'constant circuits
This transistor is especially suitable for S·band telemetry and
other large'signal cw or pulsed applications in stripline, micro·
stripline, and lumped-constant circuits.
• Formerly RCA Dev. No. TA8803.

MAXIMUM RATINGS,Absolute-Maximum Values:
................................................. .

VCBO

45

V

................................................... .

VEBO

3.5

V

CONTINUOUS COLLECTOR CURRENT

IC

3.5

A

TRANSISTOR DISSIPATION:

PT

COLLECTOR·TO·BASE VOLTAGE
EMITTER·TO·BASE VOLTAGE

At case temperature up to 75°C

41.7

At case temperature above 7SoC .................................... Derate linearly at

0.333

W

w"c

TEMPERATURE RANGE:
Storage and operating (Junction) .....................................•.............

-65'0+200

°c

230

°9

LEAD TEMPERATURE lOuring soldering):
At distances ~ 0.02 in. (0.5 mm) from seating plane for 105 max.

TERMINAL CONNECTIONS
Terminal 1 - Emitter
Terminals 2 & 4 - Base
Terminal 3 - Collector

360

WARNING: The ceramic heat·sink portion of this devic~
contains beryllium oxide. Do not crush; grind, or abrade
this portion because the dust resulting from such action
may be hazardous if inhaled, Disposal should be by burial.

9·74

File No.765 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA2310
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 25"C
STATIC
TEST CONDITIONS
SYMBOL

CHARACTERISTIC

LIMITS

Voltage

Currant

V de

rnA de

V CE

V CB

IE

2B

0

RCA2310

IC

UNITS

MIN.

MAX.

-

0.5

Collector Cutoff Current:
With emitter open

I CBO

Collector-to-Base Breakdown Voltage

V(BRICBO

0

5

45

-

V

Emitter-to-Base Breakdown Voltage

V(BRIEBO

0.1

0

3.5

-

V

Forward Current Transfer Ratio

hFE

500

15

120

5

Thermal Resistance:

-

ROJC

(Junction-ta-Case)

rnA

°CIW

3

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

FREQUENCY

V de

GHz

VCC

Output Power

Large-5ignal Common-Base

LIMITS

VOLTAGE

POWER
W

f

PIB
1.5

POB

24

2.3

RCA2310
POB MIN.

UNITS

MAX.

10

-

W

GpB

24

2.3

10

B.2

-

dB

Collector Efficiency

'IC

24

2.3

10

30

-

%

Collector-to-Base Output Capacitance

Cabo

-

16

Power Gain

V CB

= 2B

1 MHz

COLLECTOR SUPPLY VOLTAGE (VCC).24 V
INPUT POWER (PIB)· SAT.

..I

..g
0:

CASE TEMPERATURE '(Tc)a2S·C

..

I"

.Jo

g
'"~

13

..

CASE TEMPERATURE (TC)·2S·C
FREQUENCY (f) '" 2.3 GHz
13 EMITTItR RESISTANCE (Re)·O n

I•

.'Z.'lt"
~c:F-.

0:

·POB

!I:

~
"

pF

.... ~

10

~

...,~

0

10

7
1.5

1.6

1.7

1.8

1.9

2.1

2.2

2.3

2.4

o

0.25

0.5

0.75

1.25

1.5

1.75

2.25

INPUT POWER (PIsl- W

FREQUENCY (f)-GHz
92CS-2l561

Fig. 1 - Typical saturated output power· vs. frequency.

92CS-2l562

Fig. 2 - Typical output power vs. input power and supply voltage
at2.3GHz.

361

RCA2310 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 765
COLLECTOR SUPPLY VOLTAGE (Vcc)a24 v

CASE TEMPERATURE (Tc}·2S D C

j

12 FREQUENCY IfI-'.'

'"
~

g

..,.

!,

II'

.
-

r
10

~

9

~

e

G"'[B1B:
..

.

.

..

fl~:;~

~

HI~!

\d

-p

III

~

tI

I

34 ..

U
ii:
33 ~

..

.
0
l-

'C
32

~

7

31

8

6

.0

0

o

0.25

9

~!

ililtHHcH+

1.! :f 10
~~

··Re(ZCL'

~ ~

0

~!
'"
I-

!tU#.!-!L:t

t

~! t·
-:
Im(ZIN)

ttH 1·14

.•

~!. lP:If!i: r,q ltll if·

t

111

_.

·f-t·~ttttt

,

lm (ZCU

I.'

1.7

1.6

loB

1.9

FREQUENCY

...

2.1

(fl- GHz

Fig. 4 - Typical input impedance and collector load impedance
vs_ frequency.

'I
0.085

oon

INPUT

I- 0.50 -I

1'.'6al~1
1I •. 71 IT

CI

'.

I- 0.50 -J
0.OB5
TsIII2.71.1~1'.'61

I II
0.77

0.03

10~6:~_

0.77

136 ,,~

NOTE 1,2

16.••

.

oTE
0.B2

(20.8)

0.04

I--~.~o'l

~OTE 1;+l~3

C2. C3:
RFC:

Re:

ATC~100.

or equivalent
Filtereon, Allen-Bradley SMFB·A 1 or equivalent
3 turns No. 28 wire 0.0625 in. (1.58 mm) dia.,
0.25 in. (6.35 mm) long
0 to 0.24 n. 1 W, choose for best 1'JC
10 pF.

Dielectric Material: 0.031 in. (0.79 mm) thick Teflon-Fiberglas
double-clad circuit board (e ::::: 2.6)

Ui.351

0.B2

(20.BI

DIMENSIONS IN INCHES AND MILLIMETERS.
MILLIMETER VALUES ARE IN PARENTHESES.

e1. C4:

'.4

92C5-23564

"

'I

n, j i t
:111 IIi

..

Re(ZIN·)

92CS-2~563

Fig. 3 - Typical output power and collector efficiency vs. input
power at 2.3 GHz.

)1 j

ill'
I;

0

9 -5

I. 75

0,5
0.75
I
1.25
1.5
INPUT POWER (PIB)-W

COLLECTOR SUPPLY VOLTAGE {VCC)&:24V

~"5'
OUTPUT POWER (POB) "SAT.
H::1 15 CASE TEMPERATURE (TC)-25-C

92CS-23565

Note 1: Amplifier center frequency and matching may be adjusted in
the 2.1-2.2 GHz range by trimming the stub lengths of Xl and

X2·
Note 2: Input stubs may be replaced by a single 0.3-3.5 pF air dielectric
variable capacitor.
Note 3: Output stubs may be replaced by a single 0.3-3.5 pF air dielectric
variable capacitor.

Fig. 5 - Typical4(J..MHz bandwidth, 2.1!;'GHz, 9-Wamplifierusing the RCA2310.
0.55 in.
03.97 mm)

0.55 In.
(13.97 mm)

92C5-25566

10 pF. ATe-1 ~O, or equivalent
Filtercon. Allen-Bradley SMFa.A 1 or equivalent
0.70 in. (17.8 mm) length of No. 32 wire (laid
flat on circuit)
Dielectric Material: 0.031 in. (0.79 mm) thick Teflon-Fiberglas
double-clad circuit board (e = 2.6)

Cl,C3:
C2:
RFC:

Fig. 6 - 2.3-GHz test circuit.

362

Fig. 7 - Block diagram of test set-up for measurement of performance
of 2.3-GHz common-base amplifier.

File No. 6 5 7 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

OO(]3LJ1]

RF Power Transistors

Solid StateDivision

RCA3001

RCA3003

RCA300S

1-W, 2.S-W, and 4.S-W 3-GHz
Emitter-Ballasted N-P-N Transistors
Features:

RCAHF-46
(RCA H F.b6 can also be supplied

without flange upon request,)
H-179qR1

•
•
•
•
•
•
•

1-W output with 7-dB gain Imin.) at 3 GHz IRCA3001)
2.S-W output with S-dB gain Imin;) at 3 GHz IRCAl003)
4.S-W output with S-dB gain Imin.) at 3 GHz IRCA300S)
Emitter-ballasting resistors
Stable common-base operation
Hermetic stripline package. with low inductances and low parasitic capacitances
Load-VSWR capability of 10:1 at 3 GHz

RCA3001, RCA3003, and RCA3005 are emitter-ballasted
'epitaxial silicon n-p-n planar transistors that use overlay

parasitic capacitances and inductances, which afford stable
operation in the common-base configuration.

multiple-emitter-site construction. They are designed·for use in

microwave communications, S-band telemetry, microwave

relay links, phased-array radars, transponders, and altimeters.
The hermetic stripline package of these devices has low

These transistors are suitable for large·signal cw or pulsed
applications in stripline, microstripline, and lumped·constant
circuits.

MAXIMUM RATINGS, Absolute-Maximum Values:
RCAlO01
COLLECTOR·TO-BASEVOLTAGE..................

VCBO

50

RCA3003
50

RCA300S
50

V

EMITTER-TO-BASE VOLTAGE - . . . . . . . . . . . . . . . . . . . .

VEBO

3.5

3.5

3.5

V

TRANSISTOR DISSIPATION:

PT

At case temperature up to 7SDC· .................. .
At case temperature above 75DC .... Derate linearly at
TEMPERATURE RANGE:
Storage and operating IJunction) ................. .

5

8.34

14.7·

W

0.04

0.067

0.118

wi"c

-65 to +200

DC

LEAD TEMPERATURE lOuring soldering):
At distances;;' 0.02 in. 10.5 mm) from seating plane
for 10 s max ................................. .

9·74

230

DC

363

RCA3001 RCA3003 RCA3005 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

File No. 657

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC' = 25°C
STATI.C
TEST CONDITIONS
CHARACTERISTIC

SYMBOL

Voltage
Vde
VCE VCB

Collector Cutoff Current:
With emitter open

28

ICBO

LIMITS

Current
mAde

RCA3001

RCA3005

RCA3003

UNITS

IC MIN. MAX. MIN. MAX. MIN. MAX.

IE

a

-

0.5

-

0.5

-

0.5

rnA

Collector-ta-Base Breakdown
Voltage

V(BR)CBO

0

5

50

-

50

-

50

-

V

Emitter-ta-Base Breakdown
Voltage

VIBR)EBO

0.1

0

3.5

-

3.5

-

3.5

-

V

100

15

120

15

120

15

120

-

25

-

15

-

8.5

Forward Current Transfer Ratio

hFE

5

Thermal Resistance:
ROJC

(Junction-ta-Case)

°C/W

DYNAMIC
TEST CONDITIONS
CHARACTERISTIC

Output Power
Large·Signal
Common-Base
Power Gain
Collector Efficiency

Collector-ta-Base
Output Capacitance

SYMBOL

POB

GpB

nC

Cobo

FREQUENCY
GHz

VCC

f

PIB POB MIN. MAX.

28
28
28

3
3
3

0.2
0.8
1.4

28
28
28

3
3
3

1.0
2.5
4.5

28
28
28

3
3
3

1.0
2.5
4.5

VCB = 28

RCA3001

RCA3003

1.0

-

-

-

-

-

2.5

7

-

-

-

-

-

-

RCA3005

5

-

-

-

4.5

-

W

5

-

dB

-

%

7

pF

30

-

-

-

-

-

30

-

3

-

5

-

30

-

UNITS

MIN. MAX. MIN. MAX.

'~"

"I
'~"

POWER
W

1 MHz

a,
~

ffi

LIMITS

VOLTAGE
Vdc

~
0:

I

OJ

'~"

I-

l-

ii'
S
0

ii'l-

"

0

FREQUENCY (fl-GHz

FREQUENCY If )-GHz
92CS-21996

Fig. 1 - Typical output power vs. frequency for RCA3007.

364

Fig.2 - Typical output power vs.. frequency for RCA3003.

File No. 657 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA3001 RCA3003 RCA3005

2.'

INPUT POWER (PIS)-W

FREQUENCY (f)-GHz
92CS-l1998

Fig.3 - Typical output power Vi. frequency for RCA3005.

INPUT POWER 1Pxs)-W

92CS-21999

Fig.4 - Typical output power and collecto.' efficiency Vi. input power
at 3 GHz for RCA3001.

INPUT POWER (PIsI-W
92CS-22000

Fig.5 - Typical output power and collector efficiency Vi. input power

92CS-22001

Fig.6 - Typical output power and collector efficiency vs. input power
at 3 GHz for RCA3005.

at 3 GHz for RCA3003.

92CS-22002

Fig.7 - Typical output power and collector efficiency vs. input power
at 2.3 GHz for RCA30DI.

POWER IPlsl-W

92CS-22003

Fig.8 - Typical output power and collector efficiency vs. input power
at 2.3 GHz for RCA3003.

365

RCA3001 RCA3003 RCA3005 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 657

20
INPUT POWERIPIB)-W

22

24'

26

28

30

COLLECTOR SUPPLY VOLTAGE {Vccl-V
92CS-22004

Fig.9 - Typical output power and collector efficiency vs. input power
at 2.3 GHz for RCA3005.

92CS-22005

Fig. to - Typical output power·and collector efficiency
voltage at 2.3 GHz and 3 GHz for RCA3001.

VB.

supply

COLLECTOR SUPPLY VOLTAGE 1Vcc1-V
92CS-22006

Fig. 1 , - Typical output power and collector efficiency vs, supply
voltage at 2.3 GHz and 3 GHz for RCA3003.

FREQUENCY (f)-GHz

92CS-22008

Fig. 13 - Typical input impedance and collector load impedance VB,
frequency for RCA3001.

366

92C5-22007

Fig. 12 - Typical output power and collector efficiency vs. supply
voltage at 2.3 GHz and 3 GHz for RCA3005.

FREQUENCY IO-GHz

92CS'22010

Fig. 14 - Typical input impedance and collector load impedance vs.
frequency for RCA3003.

File No. 657 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RCA3001 RCA3003 RCA3005

t.l~l.~~

50

c~

X2

"(0.250·
(6.4)

+Vcc
Cl

n

OUTPUT

1=

92CS-22011RI

: 5 pF, ATe-l00 or equivalent

C2 : Filtereon, Allen-Bradley SMFB·Al or equivalent
RFC: 0.70 in. 117.8 mm) of #32 wire (lay flat on circuit)
Dielectric material: 1I32·in. (0.79 mm) Teflon-fiberglass

92CS-i?2009

double-clad circuit board (f '" 2.61. Lines Xl and X2 are
produced by removing upper copper laver to dimensions

Fig. 15 - TVpical input impedance and collector load impedance vs.
frequency for RCA30D5.

shown.

Fig. 16 - 3·GHz tes~ circuit for RCA3001.

0.150
(3.8)

RCAcr~03

0.150
(3.8)

RCA3005

1

CI

+Vcc
Cl

OUTPUT

50n

92CS-22.012

: 5 pF, ATe-100 or equivalent

C2 : Filtereon, Allen-Bradley SMFB·A 1 or equivalent
A Fe: 0.70 in. (17.8 mm) of #32 wire (lay flat on circuit)

Dielectric material: O.Ol·in. (0.25 mml Teflon-fiberglass
double-clad circuit board If "" 2.61. Lines Xl and X2 are
produced by removing upper copper layer to dimensions
shown.
Fig. 17 - 3·GHz test circuit for RCA3003 and RCA3005.

TERMINAL CONNECTIONS
Terminal 1 - Emitter

Terminals 2 & 4 - Base
Terminal 3 - Collector

Fig. 18 - Block diagram of test set-up for measurement of
performance from 2.3-GHz or 3-GHz common·
base amplifier.

WARNING: The ceramic body of these devices contains
beryllium oxide. Do not crush. grind, or abrade these
portions because the dust resulting from such action may
be hazardous if inhaled. Disposal should be by burial.

367

Dimensional Outlines _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

SYMBOL

.".0.0,.,
A

INCHES
MIN.
M.X.

1. This zone is controlled for automatic handling. The variation in
actual diameter within the zone shall not exceed 0.010 in. (0.254 mm).

n260
n02'
0.016
0.019
0.335
0.370
n'05 0.335
O.200T.P.
O.looT.P.
MOO 0.125
0.028
0.034
0.029
0.045
1.500
0.050
n250
n100

2. (Three leads) ;b2 applies between I, and '2' I/lb applies between
12 and 1.5 in. (38.20 mm) from seating plane. Diameter is uncontrolled

0.007
450 T.P.

.,
h

in "

0.240
0.016

MILLIMETERS
MAX.

MIN.

6.10
0.400

a60

n406

n""

NOTES

0.533

8.51
9.40
7.75
&51
5.08T.P.
2.54T.P.
0.229
3.18
0.711
0.854
1.14
0.737
38.10

4.'

'.5

'.27
a35
2.54

5,7

and beyond 1.5 in. (38.10mm) from seating plane.

3. Measured from maximum diameter of the actual device.
4. Leads having maximum diameter 0.019 in. (0.483 mm) measured in

gaging plane 0.054 in. (1.37 mm) + 0.001 in. (0.25 mm) - 0.000 in.
(0.000 mm) below the seating plane of the device shall be within 0,007 in.
(0.178 mm) of their true positions relative to the maximum·width tab.

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIDNS
5. The device may be measured by direct methods or by the gage and gaging
procedure described on gage drawing GS-l.
6. Details.of outline in this zone optional.
7. Tab centerline.

TO-18

- f A T ' N G PLANE

.Df~~+T
j 1J

:

F-II-

~b2

SYM80L

.."2,0
.,
F

0.036
0.028
0.500

'2

0.050
0.250
(SoT.P.

1. (Three leads) q,b2 applies between 11 and 12. q,b applies between 12 and
0.5 in. (12.70 mm) from seating plane. Diameter is uncontrolled in 11
and beyond 0.5 in. (12.70 mm) from seating plane.

~32

"

NOTES

5.33
0.533

0.406
0.406 0 ....'
5.31
4.52
U5
2.54T.P.
1.27T.P.

'.84

IO.O~

k

1

NDTES:

MILLIMETERS
MIN.
MAX.

0.170
0.210
0.016
0.021
0.016
0.230
0.209
0.178
0.195
O.l00T.P.
O.DSOT.P.

,0,

b

INCHES
MIN.
MAX.

0.04&
0.048

0.914
0.711
12.70

2.4
2.4

n762
1.17
1.22
1.27

6.35

2. Leads having maximum diameter 0.019 in. (0.483 mm) measured in
gaging plane 0.054 In. 11.37 mml + 0.001 in. 10.025 mml - 0.00 in.
(0.00 mm) below the seating plane of the device shall be within 0.007 in.
(0.178 mm) of their true positions relative to a maximum·width tab.

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
4. The device may be measured by direct methods or by the gage and gaging
procedure described on gage drawing GS·2.

3. Measured from maximum diameter of the actual device.

5. Tab centerline.

TO-39

SEATING

r'~

JJ
lTnLl'~
~t '/·
~o

~YM'OL

.-•

.b
.b2
.0
.01
h

1
k

I I

I,
1

:~~

P

h

Q

12
P
0

2

TEMPERATURE
MEASURING POINT

a

92CS'15641R2

Note 1: This 20ne is controlled for automatic
handling. The variation in actual diameter within this zone shall not exceed
0.010 in. 10.254 mml.
Note 2: (Three leads) ¢ b 2 applies between 11
and 12 , ¢b applies between 12 and 0.5
in. 112.70 mm) from seating plane.
Diameter is uncontrolled in 11 and

368

92CS~20223

~

INCHES
MIN.
MAX.
0.190
0.210
0.240
0.260
0.016
0.021
0.016
0.019
0.350
0.310
0.315
0.335
0.009
0.125
0.028
0.034
0.029
0.040
0.500
0.050
0.250
0.100

MILLIMETERS
MAX:
M'N.
4.83
5.33
6.10
6.60
0.406
0.533
0.483
0.406
•.89
9.40
8.00
8.51
0.229
3.18
0.111
0.864
0.131
1.02
12.10
1.21
6.35
2.54

NOTES

2
2

3
2
2
2
1
4

450 NOMINAL
900 NOMINAL

MILLIMETER DIMENSIDNS ARE DERIVED
FROM ORIGINAL INCH DIMENSIDNS

beyond 0.5

se~ting plane.

in. 112.70 mmJ from

Note 3: Measured from maximum diameter of
the actual device.
Note 4: Details of outline in this zone optional.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Dimensional Outlines
"low-Profile TO-39"

~YMBOL

SEATING

t=r==F='~

·2

MI LLI METERS

MIN.

MAX.

MIN.·

MAX.

0.'65
0.1'5
0.090
0.495
0.245
0.055
0.245
0.045
0.025
0.145
0.095
0.165
0.040
0.045
0.027

0.175
0.125
0.110
0.505
0.255
0.065
0.255
0.060
0.035
0.175

4.19
2.92
2.29
12.57
6.22
1.39
6.22
1.14
0.63
3.68
2.41
4.19
1.02
1.14
0.68

4.44
3.17
2.79
12.83
6.48
1.65
6.48
1.52
0.88
4.44
2.92
4.95
1.52
1.39
0.83

0.'15
0.195
0.060
0.055
0.033

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

TO·215AA
SYMBOL

~ CERAMIC

..,
•B

TERMINAL No.1
TERMINAL No.2

.0
• 0,
.02
F
F,
F2
L
L,

TERMINAL No. 3

REFERENCE POINT
FOR CASE-TEMERATURE
MEASUREMENT

INCHES

MILLIMETERS

MIN.

MAX.

MIN.

MAX •

0.118
0.090
0.497
0.180
0.162
0.028
0.009
0.114
0,098
0.179

0.122
0.094

2.997
2.286
12.624
4.57
4.11
0.71
0.229
2.90
2.49
4.55

3.098
2.387
12.776
NOM.
NOM.
0,99
0,279
3.20

0.503
NOM .
NOM.
0,039
0,011
0.126
0.104
0.191

NOTES

,
2
3

2.64
4.85

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL 'NCH DIMENSIONS
NOTES:
1.

Silver or KOVAR-

2.
3.

Solid silver
Gold·plated KOVAR

-Trademark. Westinghouse Electric Corp.

371

Dimensional Outlines _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

TO-216AA
SYMBOL

A
b
bl
b2
C

00
001
E
L

L2
M
oM

N
Nl
N2
0
01
02

..J.l
T A

02Tf

~~~:Sdg~::::!:=====!:-_lc
+M

0t SEATING PLANE
0, .L

MAX.

MIN.

0.230
0.205
0.145
0.105
0.010
0.320
0.130
0.300
0.290
0.510
0.064
0.163
0.410
0.078
0.150
0.170
0.045

0.110

o:izo
0.025

3.81
4.953
3.429
2.413
0.102
7.75
2.80
6.99
6.74
11.56
1.35
3.05
10.80

2.80
3.05
0.64

-

-

-

oW

MILLIMETERS

INCHES

MIN.
0.150
0.195
0.135
0.095
O.D04
0.305
0.110
0.215
0.265
0.455
0.053
0.120
0.425

MAX.

3
5
1
5

-

-

4
-

1,14

-

-

-

-

NOTES

5.84
5.201
3.683
2.667
0.254
8.12
3.30
7.62
7.36
12.95
1.62
4.14
11.93
1.98
3.81
4.31

5
2

MILLIMETER DIMENSIDNS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
NOTES:

+w'-~r=E1

1.0.053· Q.064 INCH 11.35·1.62 mml WRENCH FLAT.
N

,
N2

I

2. PITCH CIA. OF 8·32 UNC·2A COATED THREADS (REF:
UNITED SCREW THREADS ANS 81.1·1960). THE APPLIED
TORQUE SHOULD NOT EXCEED 5 IN., LBS. CLAMPING

I

FORCES MUST BE APPLIED ONLY TO THE FLAT SUR·

FACES OF THE STUD.
3. TYPICAL FOR ALL LEADS.
4. LENGTH OF INCOMPLETE OR UNDERCUT THREADS OF

92SS-3763R4

oW.
5. BODY CONTOUR OPTIONAL WITHIN Q2. QD. AND E.

TO-217AA

~

______ +o-______

~

SYMBOL

INDEX

.
-t-.

--.-- ..

MIN.

MAX.

0.295
0.135
0.235
0.055
0.020
0.650

0.325
0.150
0.250
0.065
0.025
0.680

8.25
3.81
6.35
1.65
0.635
17.27

0.360
0.111
0.213
0.114
0.220
0.420

0.380
0.131
0.233
0.133
0.249
0.460·

7.50
3.43
5.97
1.40
0.508
16.51
9.15

Q

-

0.090
0.Q15

-

9.65
3.32
5.91
3.37
6.23
11.68
2.28
0.038

9W

-

-

-

-

A
B1
B2
B3
9D
E
e
e1
L

~

T-+-n;d!~-=~:hh==-~I,h,,--,
o

1

A

+M

92CS-1576!)RI

372

-t

MILLIMETERS

MAX.

9b

GAGE PLANE

INCHES
MIN.

9M
N
N1

2.82
5.42
2.90
5.59
10.67

NOTES

-

5

4 Pins

1
1

-

2

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
NOTES:

1. The pin center·to-center dimensions are measured at the gage plane.
2. % in. 28 UNF 2A (Mod). Applied torque not to exceed 12 inchpounds.
3. This device may be operated in any position.
4. Seating plate to be flat within 0.003 inches.
5. TypicaI4·places.

Dimensional Outlines
HF·28

MIN.

INCHES
MAX.

MILLIMETERS
MAX.
MIN.

A

0.225

0.250

5.72

6.35

B

0.145

0.160

3.69

4.06

B,
C

0.165.

0.180

4.20

4.57

0.004

0.010

0.102

0.254

0
0,

0.657

0.667 16.69

16.94

0.190

0.210

4.83

5.33

E

0.155

0.165

3.94

4.19

E,
F

0.140

0.165

3.56

4.19

0.058

0.063

1.48

1.72

L

0.235

0.265

5.97

6.73
2.438

SYMBOL

TERMINAL
No.2

TERMINAL
No 4

--1

1-.,

NOTE: EMITTER IS GOLD PLATED

TERMINAL

No.1
92CS-17609

~p

0.090

0.096

2.286

0

0.062

0.077

1.58

1.95

q

0.420

0.440 10.67

11.17

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

HF·31

SYMBOL

~
l-o,--1-------'C
=:1

0,

I

~I~I~I~I ____~~~

r
~.32

MIN.

MAX.

A

0.090

0.135

2.29

3.42

B
Bl
B2
C
0
E
L
Ll

0.195
0.135
0.095
0.004
0.305
0.275
0.265
0.455
0.055
0.025

0.205
0.145
0.105
0.010
0.320
0.300
0.290
0.510
0.070
0.045

4.96
3.43
2.42
0.11
7.48
6.99
6.74
11.56
1.40
0.64

5.20
3.68
2.66
0.25
B.12
7.62
7.36
12.95
1.77
1.14

bl

c
E

F,
L
~P

a

0,

I\

:

1

~I;

~ING
PLANE

l-

q

R

C

rev! ,I;

IJ.

f---q--j

92C$-19827

T
F,

-

1

-

-

-

52SHIG2Rl

~D

b

-

-

NOTE: 1. TYPICAL FOR ALL LEADS

A
b

j

NOTES

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

SYMBOL

0, A 0

MILLIMETERS

MAX.

0
0,

TERMINA.L NG. 2 . /

INCHES
MIN.

INCHES

MILIMETERS

MIN.

MAX.

MIN.

MAX.

0.160

0.210
0.145
0.105
0.010
0.320
0.300
0.067
0.510
0.125
0.105

4.07
3.429
2.413
0.102
7.75
6.99
1.448
11.56
2:921
2.16

5.33
3.683
2.667
0.254
8.12
7.62
1.701
12.95
3.175
2.66

0.135
0.095
0.004
0.305
0.275
'0.057
0.455
0.115
0.085

-

-

-

-

0.590
0.115

0.610
0.125

14.99
2.921

15.49
3.175

NOTES

1

2

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
NOTES: 1. TYPICAL TWO LEADS.
2. BODY CONTOUR OPTIONAL WITHIN
ANDE.

Q,.

~

D.

373·

Dimensional Outlines _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
HF-36
INCHES
MIN.
MAX.

SYMBOL
A
B
8,
82
C

0.195
0.135
0.095
0.004
0.319
0.033
0.305

_02
E

Q

I

0.635
0.265
0.455

L
L,
_M
N
N,
N2
0
0,

11

~:!:---lt

0.120

0.450

0.095
0.145

0.025
0.1399

.w

0.335
0.065
0.320
0.300
0.730
0.290
0.510
0.163
0.490
0.078
0.135
0.170
0.045
0.1437

4.70

6.11

4.96
3.43
2.42
0.11
8.12
0.84
7.48
8.99
16.11
6.74
11.56

5.20
3.68
2.66
0.25
B.52
1.65
8.12

NOTES

7.62

3.05
11.41

2.42
3.68
0.64
3.531

18.51
7.36
12.95
4.14
12.45
1.98
3.43
4.31

-

-3
-

1

-

4

1.14

-

3.632

2

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

G
NOTES:

U

L1..j..1J--L--7

0.010

0.275

G

~.=======+=t=+=+=+=======

0.240
0.205
0.145
0.105

0.185

.0
.0,

MILLIMETERS
MIN.
MAX.

1.

0.053-0.064 INCH (1.35 - 1.62 mml WRENCH FLAT.

2.
3.

PITCH OIA. OF 8-32 UNC·2ACOATED THREAD.IASA 81.1·19601.
TYPICAL FOR ALL LEADS.

4.

LENGTH OF INCOMPLETE OR UNDERCUT THREADs OF_w

5.

RECOMMENDED TOROUE: 5 INCH-I'OUNOS

92CS-I94I'

HF-40

SYM80L
A
b

.

bl
b2
0

00

.,e
F
L
L2
L3
oP
q

R
8

INCHES

MAX.
0.280
0.157
0.220
0.207
0.007
0.250
0.510
0.080
0.055
0.185
0.990
1.470
0.080
0.125·
0.728
0.130

MIN.
0.260
0.153
0.210
0.203
0.006
0.240
0.490
0.070
0.045
0.165
0.970
1.430
0.070
0.115
0.723
0.120

45°

MILLIMETERS
MIN.·
MAX.
6.604
7.112
3._
3.987
5.334
5.588
5.257
5.156
0.153
0.178
6.096
6.350
12.446
12.954
1.778
2.032
1.143
1.397
4.191
4.699
24.63&
25.146
36.322
37.338
1.778
2.032
2.921
3.175
18.491.
18.364
3.302
3.048

45°

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

374

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Dimensional Outlines
HF·41

SYMBOL
A
Al
B
b
C
liD
liD 1
L
L2
M
Ml
N
N2

l====~
A,

~

.---------

~====+f
_ _~---L
c

Q

al

a2

I

INCHES
MIN.
MAX.

MILLIMETERS
MIN.
MAX.

0.185
0.215
0.114
0.122
0.380
0.390
0.220
0.230
0.002
0.008
0.270
0.290
0.245
0.255
1.040
1.060
0.520
0.530
0.058
0.062
0.056
0.064
0.445
0.455
0.125
0.135
0.070
0.090
450 NOM.
450 NOM •

4.70
5.46
2.90
3.10
9.66
9.90
5.58
5.84
0.05
0.20
6.86
7.38
6.22
6.48
26.42
26.93
13.20
13.45
1.47
1.57
1.42
1.62
11.29
11.55
3.18
3.43
1.78
2.28
450 NOM.
450 NOM.

M
NOTE

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
NOTE: PITCH DIA. OF 8·32 UNF·2A COATED
THREAD (ASA Bl.l·19601

92CS-20420

SYMBOL

HF-44

A
Al
B
b
bl
C
~D

,,01
L
L2
M
Ml
N
N2
Q

al

INCHES
MIN.
MAX.
0.250
0.275
0.163
0.173
0.299
0.307
0.221
0.229
0.110
0.115
0.0045
0.006
0.370
0.390
0.320
0.330
1.040
1.055
0.520
0.530
0.070
0.080
0.055
0.065
0.455
0.475
0.100
0.130
0.085
0.095
45 0 NOM.

MILLIMETERS
MIN.
MAX.
6.35
6.98
4.141
4.394
7.595
7.797
5.614
5.816
2.794
2.921
0.113
0.152
9.40
9.90
8.128
8.382
26.42
26.79
13.208
13.462
1.778
2.032
1.397
1.651
11.56
12.06
2.54
3.30
2.159
2.413
450 NOM.

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
NOTE: PITCH DIA. OF 8·32 UNC·2A COATED THREAD
(ASA Bl. 1·19601

92CS-ZOI06

375

Dimensional Outlines _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
HF-46

INCHES

SYMBOL

Min.

A
A1

0.155
0.120

A

AI

C

0

Max.

3.937
3.05

4.191
3.55
6.00

_B

0.225

.B1
C

0.160

0.180

5.72
4.07

0.055

0.065

1.397

1.651

0

0.790

0.810

20.57
2.971
0.812

01

0.113

0.117

20.07
2.871

02
E

0.028
0.240

0.032
0.260

0.712
6.10

L

0.740

0.760

0.120
0.132
0.005 Nom.
0.557 -,
0.567

0
q

nTF~

Min.

0.165
0.140
0.240

fP

~:;~

MILLIMETERS

Max.

4.57

6.60
19.30

18.80

3.35
3.26
0.127 Nom.
14.40
14.15

,

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

92CS-2J556RI

HF-47

SYMBOL
A
Al

B
b
C
\lD

INCHES
MIN.
MAX.
0.127
0.056
0.380
0.220
0.002

IIDl
L

0.270
0.245
1.040

L2

0.520

Q

<11

a2

0.153
0.060
0.390
0.230
0.008
0.290
0.255
1.060
0.530

0.070 , 0.090
450 NOM.
450 NOM.

MILLIMETERS
MIN.
MAX.
3.23
3.89
1.43
9.66
5.58
0.05
6.86
6.22
26.42
13.20

1.53
9.90

5.84
0.20
7.38
6.48
26.93
I 13.45
1.78
2.28
450 NOM.
450 NOM.

I

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

92CS-2tOS6

376

- - - - - - - - - - - - - - - - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ Dimensional Outline.
HF·50

INCHES
SYMBOL

1
G

2--'===rh::r=-=l-'---------'~\It

l.-T-ERM'N-AL

H

A
B
C
0
E
",F
G
H

J
K

L

MILLIMETERS

MAX.

MIN.

MAX.

0.890 0.910
0.645 0.655
0.390 ·0.410
0.045 0.055
0.004 0.010
0.117 0.125
0.390 0.410
0.115 0.150
0.057 0.067
0.110 0.130
0.150 0.230

22.61
16.39
9.91
1.14
0.10
2.97
9.91
2.92
1.45
2.79
3.81

23.11
16.63
10.41
1.35
0.25
3.17
10.41
3.81
1.70
3.30
5.84

MIN.

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
92CS-23S8SRI

HF·55

INCHES
SYMBOL
A
B
C
D
E

of
G
H

J
K
L

,-==c~=='~:I,:}E==I$1-'-'-/

'---'----'--,f-I_,

N

MILLIMETERS

MIN.

MAX.

MIN.

MAX.

0.890
0.645
0.390
0.045
0.004
0.117
0.390
0.115
0.057
0.110
0.150
0.135

0.910
0.655
0.405
0.055
0.010
0.125
0.410
0.150
0.067
0.130
0.230
0.145

22.61
16.39
9.91
1.14
0.10
2.97
9.91
2.92
1.45
2.79
3.81

23.11
16.63
10.29
1.35
0.25
3.17
10.41
3.81
1.70
3.30
5.84
3.68

3.23

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS

92CS-24297

377

Dimensional Outlines _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

HF-56
SYMBOL
A

INCHES
Min.

0.155

MILLIMETERS

Max.

Min.

Max.

0.165

3.937

4.191
3.55

Al

0.120

0.140

3.05

oB

0.225

0.240

5.72

6.00

oBI

0.160

0.180

4.07

4.57
1.651

C

0.055

0.065

D

0.790

0.810

1.397

Dl

0.113

0.117

2.871

2.971

D2

0.028

0.032

0.712

0.812

20.57

20.07

E

0.240

0.260

6.10

6.60

L

0.440

0.460

11.18

11.68

oP

0.120

0.132

3.26

Q

q

0.005 Nom.
0.557

I

0.567

3.35
0.127 Nom.

14.15

}

14.40

MILLIMETER DIMENSIONS ARE DERIVED
FROM ORIGINAL INCH DIMENSIONS
92CM- 23960RI

A

378

AI

C

Q

Application Notes

379

OOtELJD

Solid State Devices

Solid State

Operating Considerations
1CE-402

Division

Operating Considerations for
RCA Solid State Devices

Solid state devices are being designed into an increasing
variety of electronic equipment because of their high
standards of' reliability and performance. However, it is
essential that equipment designers be mindful of good
engineering practices in the use of these devices to achieve
the desired performance.
This Note summarizes important operating recommendations and precautions which should be followed in the
interest of maintaining the high standards of performance of
solid state devices.
The ratings included in RCA Solid State Devices data
bulletins are based on the Absolute Maximum Rating
System, which is defined by the following Industry Standard
(JEDEC) statement:
.
Absolute-Maximum Ratings are limiting values of operating and environmental conditions applicable to any electron
device of a specified type as defined by its published data,
and should not be exceeded under the worst probable
conditions.
The device manufacturer chooses these values to provide
acceptable serviceability of the device, taking no responsibility for equipment variations, environmental variations, and
the effects of changes in operating conditions due to
variations in device characteristics.
The equipment manufacturer should design so that
initially and throughout life no absolute-maximum value for
the intended service is exceeded with any device under the
worst probable operating conditions with respect to supplyvoltage variation, equipment component variation, equipment control adjustment, load variation, signal variation,
environmental conditions, and variations in device characteristics.
It is recommended that equipment manufacturers consult
RCA whenever device applications involve unusual electrical,
mechanical or environmental operating conditions.
GENERAL CONSIDERATIONS

The design flexibility provided by these devices makes
possible their use in a broad range of applications and under

380

many different operating conditions. When incorporating
these devices in equipment, therefore, designers should
anticipate the rare possibility of device failure and make
certain that no safety hazard would result from such an
occurrence.
The small size of most solid state products provides
obvious advantages to the designers of electronic equipment.
However, it should be recognized that these compact devices
usually prOvide only relatively small insulation area between
adjacent leads and the metal envelope. When these devices
are used in moist or contaminated atmospheres, therefore,
supplemental protection must be provided to prevent the
development of electrical conductive paths across the
relatively small insulating surfaces. For specific information
on voltage creepage, the user should consult references such
as the JEDEC Standard No. 7 "Suggested Standard on
Thyristors," and JEDEC Standard RS282 "Standards for
Silicon Rectifier Diodes and Stacks".
The metal shells of some solid state devices operate at the
collector voltage and for some rectifiers and thyristors at the
anode voltage. Therefore, consideration should be given to
the possibility of shock hazard if the shells are to operate at
voltages appreciably above or below ground potential. In
general, in any application in which devices are operated at
voltages which may be dangerous to personnel, suitable
precautionary measures should be taken to prevent direct
contact with these devices.
Devices should not be connected into or disconnected
from circuits with the power on because high transient
voltages may cause permanent damage to the devices.
TESTING PRECAUTIONS

In common with many electronic components, solid-state
devices should be operated and tested in circuits which have
reasonable values of current limiting resistance, or other
forms of effective current overload protection. failure to
observe these precautions can cause excessive internal heating
of the device resulting in destruction and/or possible
shattering of the enclosure.

9-74

- - - - - - - - - - - - - - - - - - - - - - - -_ _ _ _ _ 1CE-402
TRANSISTORS AND THYRISTORS
WITH FLEXIBLE LEADS

Flexible leads are usually soldered to the-circuit elements.
It is desirable in all soldering ope ratings to provide some
slack or an expansion elbow in each lead to prevent
excessive tension on the leads. It is important during the
soldering operation to avoid excessive heat in order to
prevent possible damage to the devices. Some of the heat can
be absorbed if the flexible lead of the device is grasped
between the case and the soldering point with a pair of pliers.
TRANSISTORS AND THYRISTORS
WITH MOUNTING FLANGES

The mounting flanges of JEDEC-type packages such as
the TO-3 or TO-66 often serve as the collector or anode
terminal. In such cases, it is essential that the mounting
flange be securely fastened to the heat sink, which may be
the equipment chassis. Under no circumstances, however,
should the mounting flange of a transistor be soldered
directly to the heat sink or chassis because the heat of the
soldering operation could permanently damage the device.
Soldering is the preferred method for mounting thyristors;
see "Rectifiers and Thyristors," below. Devices which cannot
be soldered can be installed in commercially available
sockets. Electrical connections may also be made by
soldering directly to the terminal pins. Such connections may
be soldered to the pins close to the pin seals provided care is
taken to conduct excessive heat away from the seals;
otherwise the heat of the soldering operation could crack the
pin seals and damage the device.
During operation, the mounting-flange temperature is
higher than the ambient temperature by an amount which
depends on the heat sink used. The heat sink must have
sufficient thermal capacity to assure that the heat dissipated
in the heat sink itself does not raise the device mountingflange temperature above the rated value. The heat sink or
chassis may be connected to either the positive or negative
supply.
In many applications the chassis is connected to the
voltage-supply terminal. If the recommended mounting
hardware shown in the data bulletin for the specific
solid-state device is not available, it is necessary to use either
an anodized aluminum insulator having high thermal conductivity or a mica insulator between the mounting-flange
and the chassis. If an insulating aluminum washer is required,
it should be drilled or punched to provide the two mounting
holes for the terminal pins. The burrs should then be
removed from the washer and the washer anodized. To insure
that the anodized insulating layer is not destroyed during
mounting, it is necessary to remove the burrs from the holes
in the chassis.
It is also important that an insulating bushing, such as
glass-filled nylon, be used between each mounting bolt and
the chassis to prevent a short circuit. However, the insulating
bushing should not exhibit shrinkage or softening under the
operating temperatures encountered. Otherwise the thermal
resistance at the interface between device and heat sink
may increase as a result of decreasing pressure.

PLASTIC POWER TRANSISTORS AND THYRISTORS

RCA power transistors and thyristors (SCR's and triacs)
in molded-silicone-plastic packages are available in a wide
range' of power-dissipation ratings and a variety of package
configurations. The follOWing paragraphs provide guidelines
for handling and mounting of these plastic-package devices,
recommend forming of leads to meet specific mounting
requirements, and describe various mounting arrangements,
thermal considerations, and cleaning methods. This information is intended to augment the data on electrical characteristics, safe operating area, and performance capabilities in the
technical bulletin for each type of plastic-package transistor
or thyristor.
Lead-Forming Techniques
The leads of the RCA VERSA WATT in-line plastic
packages can be formed to a custom shape, provided they are
not indiscriminately twisted or bent. Although these leads
can be formed, they are not flexible in the general sense, nor
are they sufficiently rigid for unrestrained wire wrapping
Before an attempt is made to form the leads of an in-line
package to meet the requirements of a specific application,
the desired lead configuration should be determined, and a
lead-bending fixture should be designed and constructed. The
use of a properly designed fixture for this' operation
eliminates the need for repeated lead bending. When the use
of a special bending fixture is not practical, a pair of
long-nosed pliers may be used. The pliers should hold the
lead firmly between the bending point and the case, but
should not touch the case.
When the leads of an in-line plastic package are to be
formed, whether by use of long-nosed pliers or a special
bending fixture, the following precautions must be observed
to avoid internal damage to the device:
1. Restrain the le~d between the bending point and the
plastic case to prevent relative movement between the
lead and the case.
2. When the bend is made in the plane of the lead
(spreading), bend only the narrOW part of the lead.
3. When the bend is made in the plane perpendicular to that
of the leads, make the bend at least 1/8 inch from the
plastic case.
4. Do not use a lead-bend radius of less than 1/16 inch.
5. Avoid repeated bending of leads.
The leads of the TO-220AB VERSAWATT in-line
package are not designed to withstand excessive axial pull.
Force in this direction greater than 4 pounds may result in
permanent damage to the device. If the mounting arrangement tends to impose axial stress on the leads, some method
of strain relief should be devised.
Wire wrapping of the leads is permiSSible, provided that
the lead is restrained between the plastic case and the point
of the wrapping. Soldering to the leads is also allowed. The
maximum soldering temperature, however, must not exceed

275 0 C and must be applied for not more than 5 seconds at a
distance not less than 1/8 inch from the plastic case. When

381

lCE-402 ___________________________________________________________
wires are used for connections, care should be exercised to
assure that movement of the wire does not cause movement
of the lead at the lead-to-plastic junctions.
The leads of RCA molded-plastic high-power packages
are not designed to be reshaped. However, simple bending of
the leads is permitted to change them from a standard
vertical to a standard horizontal configuration, or conversely.
Bending of the leads in this manner is restricted to three
90-degree bends; repeated bendings should be avoided.
Mounting

Recommended mounting arrangements and suggested
hardward for the VERSAWATT package are given in the data
bulletins for specific devices and in RCA Application Note
AN4142. When the package is fastened to a heat sink, a
rectangular washer (RCA Part No. NR231 A) is recommended
to minimize distortion of the mounting flange. Excessive
distortion of the flange could cause damage to the package.
The washer is particularly important when the size of the
mounting hole exceeds 0.140 inch (6·32 clearance). Larger
holes are needed to accommodate insulating bushings;
however, the holes should not be larger than necessary to
provide hardware clearance and, in any case, should not
exceed a diameter of 0.250 inch.
Flange distortion is also possible if excessive torque is

used during mounting. A maximum torque of 8 inch·pounds
is specified. Care should be exercised to assure that the tool
used to drive the mounting screw never comes in contact
with the plastic body during the driving operation. Such
contact can result in damage to the plastic body and internal
device connections. An excellent method of avoiding this
problem is to use a spacer or combination spacer-isolating

bushing which raises the screw head or nut above the top
surface of the plastic body. The material used for such a
spacer or spacer-isolating bushing should, of course, be
carefully selected to avoid "cold flow" and consequent
reduction in mounting force. Suggested materials for these
bushings are diallphtalate, fiberglass·filled nylon, or
fiberglass·filled polycarbonate. Unfilled nylon should be
avoided.
Modification of the flange can also result in flange
distortion and should not be attempted. The package should
not be soldered to the heat sink by use of lead·tin solder
because the heat required with this type of solder will cause
the junction temperature of the device to become excessively
high.
The TO·220AA plastic package can be mounted in
commercially available TO·66 sockets, such as UID
Electronics .Corp. Socket No. PTS-4 or equivalent. For
testing purposes, the TO·220AB in·line package can be
mounted in a Jetron Socket No. DC74·104 or equivalent.
Regardless of the mounting method, the following
precautions should be taken:
I. Use appropriate hardware.
2. Always fasten th~ package to the heat sink before the
leads are soldered to fixed terminals.
3. Never allow the mounting tool to come in contact with
the plastic case.

382

4. Never exceed a torque of 8 inch-pounds.
5. Avoid oversize mounting holes.
6. Provide strain relief if there is any probability that axial
stress will be applied to the leads.
7. Use insulating bushings to prevent hot-<:reep problems.
Such bushings should be made of diallphthalate, fiberglass-fIlled nylon, or fiberglass-filled polycarbonate.
The maximum allowable power dissipation in a solid
state device is limited by the junction temperature. An
important factor in assuring that the junction temperature
remains below the specified maximum value is the ability of
the associated thermal circuit to conduct heat away from the
device.
When a solid state device is operated in free air, without a
heat sink, the steady-state thermal circuit is defined by the
junction-to-free-air thermal resistance given in the published
data for the device. Thermal considerations require that a
free flow of air around the device is always present and that
the power dissipation be maintained below the level which
would cause the junction temperature to rise above the
maximum rating. However, when the device is mounted on a
heat sink, care must be taken to assure that all portions of
the thermal circuit are considered.
To assure efficient heat transfer from case to heat sink
when mounting RCA molded·plastic solid state power
devices, the following special precautions shOUld be
observed:
1. Mounting torque should be between 4 and 8 inchpounds.
2. The mounting holes should be kept as small as possible.
3. Holes should be drilled or punched clean with no burrs or
ridges, and chamfered to a maximum radius of 0.010
inch.
4. The mounting surface should be flat within 0.002
inch/inch.
5. Thermal grease (Dow Corning 340 or equivalent) should
always be used on both sides of the insulating washer if
one is employed.
6. Thin insulating washers should be used. (Thickness of
factory-supplied mica washers range from 2 to 4 mils).
7. A lock washer or torque washer, made of material having
sufficient creep strength, should be used to prevent
degradation of heat sink efficiency during life.
A wide variety of solvents is available for degreasing and
flux removal. The usual practice is to submerge components
in a solvent bath for a speCified time. However, from a
reliability stand point it is extremely important that the
solvent, together with other chemicals in the soldeHleaniog
system (such as flux and solder covers), do not adversely
affect the life of the component. This consideration applies
to all non-hermetic and molded-plastic components.
It is, of course, impractical to evaluate the effect on
long·term device life of all cleaning solvents, which are
marketed with numerous additives under a variety of brand
names. These solvents can, however, be classified with

- - - - - - - - - - - - - - - - - - - - - - - - - - -_ _ _ _ 1CE-402
respect to their, component parts as either acceptable or
unacceptable. Chlorinated solvents tend to dissolve the outer
package and, therefore, make operation in a humid atmosphere unreliable. Gasoline and other hydrocarbons cause the
inner encapsulant to swell and damage the transistor. Aleohol
is an acceptable solvent. Examples of specific, acceptable
alehols are isopropanol, methanol, and special denatured
alcohols, such as SDAl, SDA30, SDA34, and SDA44.
Care must also be used in the selection of fluxes for lead
soldering. Rosin or activated rosin fluxes are recommended,

while organic or acid fluxes are not. EXamples of acceptable
fluxes are:
I. Alpha Reliaros No. 320-33
2. Alpha Rellaros No. 346
3. Alpha Rellaros No. 7Il
4. Alpha Reliafoam No. 807
5. Alpha Reliafoam No. 809
6. Alpha Reliafoam No. 811-13
7. Alpha Reliafoam No. 815-35
8. Kester No. 44
If the completed assembly is to be encapsulated, the
effect on the molded-plastic transistor must be studied from
both a chemical and a physical standpoint.
RECTIFIERS AND THYRISTORS
A surge-limiting impedance should always be used in
series with silicon rectifiers and thyristors. The impedance
value must be sufficient to limit the surge current to the
value specified under the maximum ratings. This impedance
may be provided by the power transformer winding, or by an
external resistor or choke.
A very efficient method for mounting thyristors utilizing
the "modified TO-5" package is to provide intimate contact
between the heat sink and at least one half of the base of the
device opposite the leads. This package can be mounted to
the heat sink mechanically with glue or an expoxy adhesive,
or by soldering, the most efficient method.
The use of a "self-jigging" arrangement and a solder
preform is recommended. If each unit is soldered individually, the heat source should be held on the heat sink and the
solder on the unit. Heat should be applied only long enough
to permit solder to flow freely. For more detailed thyristor
mounting considerations, refer to Application Note AN3822,
"Thermal Considerations in Mounting of RCA Thyristors".

tions, with virtually 110 problems of damage due to
electrostatic discharge.
In some MOS FETs, diodes are electrically connected
between each insulated gate and the transistor's source.

These diodes offer protection against static discharge and
in-circuit transients without the need for external shorting
mechanisms. MOS FETs which do not include gateprotection diodes can be handled safely if the following basic
precautions are taken:
I. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs attached to the device by the vendor, or by the
insertion into conductive material such as "ECCOSORB*
LD26" or eqUivalent.
(NOTE: Polystyrene insulating "SNOW" is not sufficiently conductive and should not be used.)
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.

RF POWER TRANSISTORS
Mounting and Handling
Stripline rf devices should be mounted so that the leads
are not bent or pulled away from the stud (heat sink) side of
the device. When leads are formed, they should be supported
to avoid transmitting the bending or cutting stress to the
ceramic portion of the device. Excessive stresses may destroy
the hermeticity of the package without displaying visible
damage.
Devices employing silver leads are susceptible to
tarnishing; these parts shoula not be removed from the
original tarnish-preventive containers and wrappings until
ready for use. Lead solderability is retarded by the presence
of silver tarnish; the tarnish can be removed with a silver

cleaning solution, such as thiourea.
The ceramic bodies of many rf devices contain beryllium
oxide as a major ingredient. These portions of the transistors
should not be crushed, ground, or abraded in any way
because the dust created could be hazardous if inhaled.
Operating

MOS FIELD-EFFECT TRANSISTORS
Insulated-Gate Metal Oxide-Semiconductor Field-Effect
Transistors (MOS FETs), like bipolar high-frequency
transistors, are. susceptible to gate insulation damage by the
electrostatic discharge of energy through the devices.
Electrostatic discharges can occur in an MOS FET if a type
with an unprotected gate is picked up and the static charge,
built in the handler's body capacitance, is discharged through
the device. With proper handling and applications
procedures, however, MOS transistors are currently being
extensively used in production by numerous equipment
manufacturers in military, industrial, and consumer applica-

Forward-Biased Operation; For Class A or AB operation,
the allowable quiescent bias point is determined by reference
to the infrared safe-area curve in the appropriate data
bulletin. This curve depicts the safe current/voltage combinatiOIlS for extended continuous operation.
Load VSWR. Excessive collector load or tuning mismatch
can cause device destruction by over-dissipation or secondary

breakdown. Mismatch capability is generally included on the
data bulletins for the more recent rf transistors.
See RCA RF Power Transitor Manual, Technical Series
RMF-430, pp 39-41, for additional information concerning
the handling and mounting of rf power transistors.

'Trade Mark: Emerson and Cumming, Inc.

383

1CE-402 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
INTEGRATED CIRCUITS
Handing
All COS/MaS gate inputs have a resistor/diode gate
protection network. All transmission gate inputs and all
outputs have diode protection provided by inherent p-n
junction diodes. These diode networks at input and output
interfaces protect COS/MaS devices from gate-oxide failure
in handling environments where static discharge is not
excessive. In low-temperature, low-humidity environments,
improper handling may result in device damage. See
ICAN-6000, "Handling and Operating Considerations for
MaS Integrated Circuits", for proper handling procedures.
Mounting
Integrated circuits are normally supplied with lead-tin
plated leads to facilitate soldering into circuit boards. In
those relatively few applications requiiing welding of the
device leads, rather than soldering, the devices may be
obtained with gold or nickel plated Kovar leads.' It should be
recognized that this type of plating will not provide complete
protection against lead corrosion in the presence of high
humidity and mechanical stress. The aluminum-foil-lined
cardboard "sandwich pack" employed for static protection
of the flat-pack also provides some additional protection
against lead corrosion, and it is recommended that the
devices be stored in this package until used.
When integrated circuits are welded onto printed circuit
boards or equipment, the presence of moisture between the
closely spaced terminals can result in conductive paths that
may impair device performance in high-impedance applications. It is therefore recommended that conformal coatings
or potting be provided as an added measure of protection
against moisture penetration.
In any method of mounting integrated circuits which
involves bending or forming of the device leads, it is
extremely important that the lead be supported and clamped
between the bend and the package seal, and that bending be
done with care to avoid damage to lead plating. In no case
should the radius of the bend be less than the diameter of the
lead, or in the case of rectangular leads, such as those used in
RCA 14-lead and 16-lead flat-packages, less than the lead
thickness. It is also extremely important that the ends of the
bent leads be straight to assure proper insertion through the
holes in the printed-circuit board.
Operating
Unused Inputs
All unused input leads must be connected to either VSS
or VDD, whichever is appropriate for the logic circuit
involved. A floating input on a high-current type, such as the
CD4049 or CD4050, not only can result in faulty logic
operation. but can cause the maximum power dissipation of
200 milliwatts to be exceeded and may result in damage to
the device. Inputs to these types, which are mounted on
printed-circuit boards that may temporarily become
un terminated , should have a pull-up resistor to VSS or VDD.
A useful range of values for such resistors is from 10 kilohms
to I megohm.

384

Input Signals
Signals shall not be applied to the inputs while the device
power supply is off unless the input current is limited to a
steady state value of less than 10 milliamperes. Input
currents of less than 10 milliamperes prevent device damage;
however, proper operation may be impaired as a result of
current flow through structural diode junctions.
Output Short Circuits
Shorting of outputs to VSS or VDD can damage many of
the higher-output-current COS/MaS types, such as the
CD4007, CD4041, CD4049, and CD4050. In general, these
types can all be safely shorted for supplies up to 5 volts, but
will be damaged (depending on type) at higher power-supply
voltages. For cases in which a short-circuit load, such as the
base of a p-n-p or an n-p-n bipolar transistor, is directly
driven, the device output characteristics given in the
published data should be consulted to determine the
requirements for a safe operation below 200 milliwatts.
For detailed COS/MaS IC operating and handling
considerations, refer" to Application Note ICAN-6000
"Handling and Operating Considerations for MaS Integrated
Circuits".
.
SOLID STATE CHIPS
Solid state chips, unlike packaged devices, are nonhermetic devices, normally fragile and small in physical size,
and therefore, require special handling considerations as
follows:
I. Chips must be stored under proper conditions to insure
that they are not subjected to a moist and/or contaminated atmosphere that could alter their electrical,
physical, or mechanical characteristics. After the shipping
container is opened, the chip must be stored under the
follOWing conditions:
A. Storage temperature, 400 C max.
B. Relative humidity, 50% max.
C. Clean, dust·free environment.
2. The user must exercise proper care when handling chips
to prevent even the slightest physical damage to the chip.
3. During mounting and lead bonding of chips the user must
use proper assembly techniques to obtain proper electrical, thermal, and mechanical performance.
4. After the chip has been mounted and bonded, any
necessary procedure must be followed by the user to
insure that these non-hermetic chips are not subjected to
moist or contaminated atmosphere which might cause
the development of electrical conductive paths across the
relatively small insulating surfaces. In addition, proper
consideration must be given to the protection of these
devices from other harmful environments which could
conceivably adversely affect their proper performance.

*Mil-M-38510A. paragraph 3.5.6.1 la), lead material.

AN-3749

OO(]3LlD

RF Power Transistors
Application Note

Solid State
Division

AN-3749

40-Watt Peak-Envelope-Power
Transistor Amplifier for AM TransmiHers
in the Aircraft Band {118 to 136 MHz}
By
Boris Maximow

This Note describes a broadband amplifier for use
in amplitude-modulated (AM) transmitters operating in
the aircraft communication band (118 to 136 MHz). The
amplifier circuit is simple and easy to duplicate and
requires a minimum of adjustments. The design leaves
ample room for modification, improvement, or adaptation
to specific needs. Fig.! shows the schematic diagram
of the amplifier, Fig.2 shows its performance over the
aircraft band, and Table I lists its features.
The amplifier shown in Fig.l uses RCA 2N3866,
40290, 40291, and 40292 epitaxial silicon planar transistors of the "overlay" emitter-electrode construction.
These transistors are intended for low-voltage, highpower operation in amplitude-modulated class C amplifiers. In addition to standard breakdown-voltage ratings,
the 40290, 40291, and 40292 transistors have rf breakdown-voltage characteristics which assure safe operation
with high rf voltages on the collector. The 40292 transistors used in the final amplifier stage are IOO-per-cent
tested for load mismatch at a VSWR of 3:1. During this
test, the transistor is fully modulated to simulate actual
operation for added reliability.
The amplifier is capable of delivering peak envelope
power of 40 watts at a modulation of 95 per cent with a
collector voltage of 12.5 volts dc. Unmodulated drive of
5 milliwatts is required at the input. The over-all efficiency of the amplifier is 48 to 53 per cent, and the
envelope distortion is less than 5 per cent for amplitude
modulation of 95 per cent.

Load Mi smatch Test

The suitability of 40292 transistors for use in the
output stages of amplitude-modulated transmitters is
determined by means of a load mismatch test which simulates the adverse load conditions that may occur in
actual practice. The test setup is shown in Fig.3. The
choice of C and L in the load circuit is dictated by practical values of these components. The circuit should
resonate with the variable capacitor half-way in. With a
variable reactive load, the impedance moves along the
outer circle of a Smith Chart so that the loading changes
between short and open circuit with intermediate values
of capacitive and inductive reactances. The VSWR at
the output of the transistor is limited to 3:1 by the 3-dB
pad inserted between the variable load and the output of
the test circuit. The transistor under test and the input
drive are modulated to assure that the transistor operates
near its full peak power capability.
At the start of the test cycle, the variable capaCItor
begins to rotate through its 360-degree range. When the
capacitor plates are 50-per-cent engaged, the tuned
circuit resonates.
The resonant circuit presents an
apparent short or open circuit to the 3-dB pad, depending
on whether the (,./4 line is in or out of the circuit. All
intermediate positions present reactances of varying
amplitudes.
Output Power and Modulation
Because the only useful power in an AM transmitter
is sideband power, it is reasonable to use this power as

10-68

385

AN-3749

R5

vcc

MOO. Vee
+J2.5VDC

+12.SVOC

C1 -300 pF, silver mica, AReO.or equiv.

C20 --8-60 pF,ARCO #404, orequiv.

L2 -5.5T. #22-13/64" dia. CloselYl
Wound tap 2.0 T.
Cambion

MU3/ 64" dia. interwind

C2 - 0.005 J.L F ceramic

RI "4700hms 0.5 W

C3 C4 Cs G8 C ll C 17 -'IOOOpF feedthrough

R2 ' 1500 ohms O.SW

C6C9CI2CI8 -O.SJ.LF ceramic

R3 -47 ohms 0.5 W

L -4T. #22-13/64" dia. interwind
4
W/L3

C7 -50 pF, silver mica. AReO,or equiv.

R4 :-15 ohmsO.SW

L5 -5T. ~~ti3/64" dia. C.T. interwind

RS -330hms 0.5 W

L6 -5T. #22-13/64" dia. interwind W/L5

LI -7T. #22-13/64" dia. 9/19"
L. tap 1.5 T.

R.F.C. -IT. #28 ferrite bead Ferroxcube
# 56-590-65/ 4B or equiv.

C IO C I3 CIS -82 pF, silver mica,
AReO,or equiv.
CI4 CI6 CI9 -ISO pF 'A~b';;':o~~Cq~iV.

L3 -6T.

F ig.l - A 40-watt peak envelope power trans is tor amplifier.
TABLE I - PERFORMANCE FEATURES OR 40-WATT
PEAK ENVELOPE POWER TRANSISTOR AMPLIFIER

DCSupply Voltage

12.5

V

Peak Envelope Power

40

W

Modulation

95

%

Efficiency

48-53

Envelope Distortion for 95% AM

<5

%
%

Second Harmonic

> 10

dB down

'.r-----~----._----_r----~----_,

i

161------.,f""-

~

~ 14r-----t----=~~~~~---_t----_l
ffi

'~"

12~~--+-----~----_+----_+--~~

'~':-'5----...,'~20:-----:!:=-----,~----"'''::-5----.,-!'40
FREQUENCY-MHz

Fig.2 - Typica/. output power as a function of frequency.

386

Fig.3 - Load mismatch test setup.

co:=~;t'l
or equiv.

AN-3749
a reference in evaluation of the transmitter. When a
single-tone sinusoidal modulating signal is used, the
total sideband power PSB in a modulated wave is given by
P SB =

PAV(~)
2+ 2

(1)

m

where P AV is the average power and m is the modulation
index. This relationship is convenient to use because
P A V is easy to measure and
P

PAY
SB= - -

3
for 100-per-cent modulation.
The performance of an AM transmitter can also be
expressed in terms of peak envelope power PPE. The
peak envelope power is equal to 2.66 PAV in a lOa-per"
cent modulated wave. The value of PPE indicates the
ultimate peak power-handling capabilities of the transistors being used.

It is unfortunate that carrier power is sometimes
used as a reference in evaluation of the performance of AM
transmitters, especially transistorized transmitters. Unlike the sideband power P SB ' the carrier power Pc does not
always have a definite relationship to PAY and PPE.
When the carrier is used for a reference, "carrier shift"
and "upward modulation" must be considered. Use of
these terms in conjunction with Pc to define transmitter
modulation only complicates the definition of per-cent
amplitude modulation. For example, Fig.4 shows an

These expressions contain the tacit assumption that
carrier level must not vary from the unmodulated state,
which may not be the case. If the modulation is adjusted
to 100 per cent by the use of Eq. (2) and PAY is measured,
values can easily be computed for PSB, PpE' and even

PcDesign Considerations

The need for wide band performance in aircraft transmitters precludes the use of sharply tuned circuits to reduce harmonic power in the output; instead, low-pass
filters are used. Any configuration of active devices
that reduces the harmonic content in the output helps to
ease the requirements. placed upon these filters. One
such configuration is a push-.pull· amplifier, which inherently has low even harmonics in the output. The
higher input impedance of a push-pull stage as compared
to a single-ended parallel combination of two transistors
is also advantageous for obtaining wider bandwidths because only one-half as much current is injected into the
input of push-pull transistors as into parallel devices
during one-half cycle.
The coupling circuits in the amplifier of Fig.l are
basically double-tuned interstage circuits, as shown in
Fig.5. R1 and C1 represent the collector output re-

TRANSISTOR No.2

TRANSISTOR No.1

..L-.-~..1 I

Vear.

Fig.5 - A double-tuned interstage.

Vmin. Vmal.

Tn

-

..

I

Fig.4 - The amplitude modulated wave; V car is the
amplitude 01 carrier before moc/ulation.
amplitude-modulated wave. The amplitude modulation
AM in per cent is defined as follows:

AM

=

(

sistance and the collector output capacitance of the
driver transistor. Li and Ri represent the input series
inductance and the input series resistance of a transistor. (For simplicity, coil resistances are omitted.)
Q values for the two circuits shown in Fig.5 are expressed as follows:
Q1

(5)

w L1

Vmax - Vmin \
V

max

+V

.

mm

) x 100

(2)
Q2

=

Use of this equation indicates that when Vmin 0,
the wave is 100-per-cent modulated without reference to
the carrier. The following expressions are based on
carrier amplitude Vcar or carrier power PC:
Vmax
AM = ( - - Vcar

)
1

X 100

w (L2

+ L i)

(6)

Ri
For large "bandwidths, it is desirable that Q1 be much
larger than Q2. L2, C2, and Li are series resonant at
some frequency fo within the bandwidth; L1 and C1 can
then be determined as follows:

(3)
(7)

(4)

In practice,the resonant frequency fo may not be exactly
the center frequency of the passband, but may tend

387

AN-3749
toward the high end of the bandwidth to compensate for
degradation of the frequency response of the transistor
itself. Normally, there is no problem obtaining relatively
high values of Ql because transistors have large collector output resistance Rio However, it is more difficult to obtain a low value of Q2 in a transistor doubletuned interstage circuit because high-power transistors
have low series input resistance Ri . The ontribution of
the inductive series input reactance Li may be sufficient
to raise the value of Qi to undesirable levels and thereby
limit the obtainable bandwidth.
This problem can be solved by use of an L-section
and its transforming properties. The inductive input
impedance of a transistor may be represented by the
solid lines of Fig.6.
The definite Q value associ ated with this input
impedance may be represented as Qi' If a capacitor Ci
is added to the transistor input of Fig.6, as shown by the

~

RT~Ri

Double-tuned interstage coupling circuits were used
throughout the amplifier shown in Fig.I. When it was
necessary to use a two-winding transformer, as in the

case of T 1 and T 2' bifiliar windings were employed for
tighter coupling. In other cases, autotransformers with
their high coefficient of coupling were used quite success fully. Eq. (7) was used as the starting point for
determination ofthe inductances in the. primaries of the
double-tuned interstages; the collector to base capacitance CCBof the transistor was substituted for C 1. Turn
ratios were determined by the impedance levels to be
transformed. The load resistance RL for each stage was
(VCC)2
determined as follows:
RL =

(12.5)2

RL

dotted line, the resistance Ri can be transformed up by
the L-se.ction to a new value RT, as follows:
(8)
The value of the capacitor Ci is calculated as follows:

(9)

When an L-section is used in conjuncti~n with a doubletuned interstage circuit, the value Q2 of the second
circuit is given by

(10)
This value is, of course, lower than that shown in Eq.
(6). Consequently, an L-section can be used to match
resistances of not-tao-different magnitudes and at the
same time maintain low values of Q. The value of Li
in the circuit is given by

R.

=~

(11)

There are limits to the results that can be accomplished with this type of transformation. For some
combination of Li and Ri , the required value of Ci may
be too large to be practically realizable. In addition,
RT is a frequency-dependent parameter. For very low
values of Qi' the capacitor Ci loses its effectiveness
because RT becomes very nearly equal to Ri'

388

(12)

A single 40292 transistor is capable of delivering
6 watts of output power with an input of 2 watts and a
supply of 12.5 volts dc at 135 MHz. For these conditions,
the load resistance RL is given by

Fig.6 .. Transistor input as an L .. section.

Li

""2Po

where V CC is the collector supply voltage and Po is the
power output. The collector-emitter saturation voltage
is omitted for simplicity.

=-1-2- =13 ohms

This value of 13 ohms from one-half of the primary winding
of T2 is transformed to 50 ohms in the secondary winding.
This impedance level allows the use of a 1:1 transformer,
which is convenient for bifilar winding. For 40292
transistors, Ri is approximately 6 ohms and XLi is about
3 ohms. An L-section is used in the inputs to the 40292
transistors in the push-pull amplifier. To maintain a low
value of Qi' the leads on the base-to-emitter capacitors
(C 14 and C16) were kept short and the capacitors were
placed as close to the base and the emitter as possible.
The values of C14 and C16 of Fig.l were determined
empirically.
The effective capacitances 11!ay differ
appreciably from the nominal value of 150 picofarads shown.
Drive power of about 3 to 3.5 watts is required for
the push-pull amplifier. This power is provided by the
40291 driver transistor operating into a 24-ohm load,
(V

[

RL =

)2

~ = (12.5)2/65 1
2P o
:.J

Becausethe input resistance to the driver is sufficiently
high (12 ohms), no L-section is used. The load resistance for the 40290 pre-driver transistor is selected
to provide the required input to the driver of about 0.6
watt. The lOO-milliwatt input required for the pre-driver
stage is supplied by. the 2N3866 class A input stage.
Again, a double-tuned interstage circuit is used for
coupling. The class A amplifier is biased to a quiescent
current of 40 milliamperes for maximum gain, and has a
load line of approximately 300 ohms, which is computed
from
VCC
(13)
Rload line = - IC

AN-3749
An autotransformer is used to transform the 300-ohm
load down to about 12 ohms at the pre driver. The input
of the 2N3866 stage is matched to the 50-ohm source.

95 per cent, and carrier power PC' as measured by a
a bolometer-type power meter. The peak envelope power
PPE is computed as follows:

This stage has a gain of about 13 dB which increases

the power from the S-milliwatt input. The problem of
subharmonic generation was solved by use of cores in
the interstage transformers. Stable operation is obtained
if the stages are kept 1.25 inches apart.
The final amplifier and the driver are modulated
symmetrically about the carrier level. The pre driver
is modulated more in a positive direction as a result
of the resistor-diode arrangement (R4,R S,Dl,D2) shown in
the circuit diagram.
Several precautions should be taken to avoid conditions which may lead to the destruction of transistors.
For example, over-modulation should not be allowed to
occur because excessive negative excursions of the
collector voltage may forward-bias the collector-to-base
junction to a destructive point.
Also, when a transmitter is keyed off, a steady-state current flow of the
order of 2 amperes is suddenly interrupted in the modulation transformer. The resulting transient voltages may
easily exc~ed the transistor breakdown ratings. Use of a
zener diode rated at twice the supply voltage in the
collector circuit provides a protection from this type of
transient. Finally, if the 3:1 VSWR in the output is
likely to be exceeded, a load-mismatch protective device
such as a VSWR detector drcuit (described in Ref.l)
should be used.
Performance and Adiustment

The curves of Fig.2 show typical values of average
modulated power P AV at an amplitude modulation of

Output- power variation across the aircraft band is about
0.5 dB for both curves shown in Fig.2. For this performance, the coil Ll was stretched or compressed for maximum power output at 136 MHz and optimum bandwidth,
and the trimmer C20 was adjusted for the best combination of output flatness and efficiency. Efficiency is
somewhat better at higher than lower frequency; harmonic
rejection is better at lower frequencies. and may be as
good as 20 dB. A spectrum analyzer is required for
detection of subharmonics when the slugs in L2 and Tl
are adjusted.

Conclusion
Because of the normal variation in the transistor
parameters, weaker drivers should. bepaired with "hotter"
output transistors and vice versa for better uniformity in
the output power. Because of their adaptability to broadband circuits, low working voltages, and small size, the
above transistors ate the logical choice for aircraft transmitters. The use of these transistors in aircraft transmitter requires no expensive tuning mechanisms such as
those used with tubes that have inherently high-Q circuits and, consequently, narrow bandwidth.

389

AN-3755

[]Cl(]3fJD

RF Power Transistors·
Application Note

Solid State
Division

AN-3755

UHF Power Generation Using
R F Power Transistors
by H.C. Lee

One major usage of rf power transistors is in uhf/
microwave power generation. RF power transistors are

widely used for both narrowband and broadband power
amplification.
Transistors suitable for power amplification must be capable of delivering power efficiently
with sufficient gain at the frequency band of interest.
The usefulness of an rf power transistor is not measured
by its power-frequency product o~ its emitter geometry,

but rather by its ability to meet cost limitations and
over-all performance objectives including reliability requirements in a given application or circuit.

This Note discusses the use of rf power transistors
in high-power generation that uses multiple transistors,
pulse operation, and broadband power amplifiers. Operational principles and design approaches for these applications are presented, and practical and reliability
aspects are discussed.

The selection of an rf power

transistor for a given application involves two steps:

(1) determination of the rf capability of the device, and
(2) establishment of the reliability of the device for its
actual operation.

When transistor performances are compared, it is important
to consider gain and efficiency, as well as power output
and frequency, because additional gain can be achieved
only at the expense of collector efficiency with the use
of additional transistors. For example, Fig.2 demonstrates

the use of two transistors which have the same power

output, but different gain and collector efficiency. The
high-gain unit shown in Fig.2(a) is capable of delivering
an output of 2.5 watts at 1 GHz with a gain of 10 dB and
a collector efficiency of 50 per cent. The low-gain unit
shown in Fig.2(b) is also capable of 2.5 watts output at
1 GHz, but has a gain of only 5 dB and a collector efficiency of only 30 per cent. As shown in Fig.2, two
low-gain transistors .are required to provide the same
performance as the high-gain, high-efficiency unit. Besides the use of an additional transistor, the system of
Fig.2(b) requires twice as much dc power as that of
Fig.2(a). In this case, the additional gain of 5 dB is
achieved at the expense of 5.9 watts of dc power .. From
the practical point of view, the system of Fig.2(b) is
more complex, and the dissipation of the output transistor
is higher.

RF Performance Criteria
The important rf performance criteria in transistor
power.amplifier circuits are power output, power gain,
efficiency, and bandwidth. State-of-the-art single overlay transistors, as shown in Fig.l, can now produce cw
power as follows:

Frequency

390

(MHz)

(W)

(dB)

Efficiency
(%)

76
400
1200
2300

100

7
6
10
6

90
70
50
40

Power

50
10
7

Gain

Package Considerations
The package is an integral part of an rf power
transistor.
A suitable package for uhf applications
should have good thermal properties and low parasitic
reactance. Package parasitic inductances and resistive
losses have significant effects on circuit performance
characteristics such as power gain, bandwidth, and
stability. The "most critical parasitics are the emitter
and base lead inductances. Table I gives the inductances
of some of the more important commercially available rf
power-transistor packages. Photographs of the packages
are shown in Fig.3. The T0-60 and TO-39 packages

1-69

AN-3755
100r-----------------~----------------------------------_,
POWER GAIN PG.,7dB

90
COLLECTOR EFFICIENCY,

60

'!JC' 90%

70

60
~

~

50

~

40

is

30

~

'"

~

20

~

10

P.G.'6dB
'!JC'70'%

I?G.'10d8
'lC'50%

P.G.'6dB
'!JC'40%

50

100

200

400

1000

2000

FREQUENCY- MHz

Fig.J . St~te~of-the art power output 01 single rl power
transistor as a function of frequency.

Po: 2.5 WATTS

PIN:025 WATT

I CHI

I GHz
(o)

PIN :0.25 WATT

Po :2.5 WATTS

r GHz

r GHz

(b)

Fig.2. A comparison of one-and two-transistor systems that have
the same output power but different gain and collector efficiencies.

TABLE I - Inductances of Packages shown in Fig_3.
Package

Lead Inductances - nH
Le
Lb

TO
TO
TO
HF
HF

3
3
3
3
0.6
2
Approximately Same
0.1
0.1

-

39
60 (isolated emitter)
60 (grounded emitter)(2NS016)
19 (hermetic stripline)
11 (coaxial case) (2NS470)

391

AN-3755 - - - - - - - - - - - - - - - - - - - - - - - - - - -

JEDEC TO-39

JEDEC TO-GO
HF-ll
Coaxial Package

HF-19
Hermetic Strip-Line Type
Ceramic-ta-Metal Package
(Isolated Electrodes)

Fig.3 - Commercially available rl power transistor packages.

were first used in devices such as the 2N3375 and the
2N3866. The base and emitter parasitic inductance for
both TO-60 and TO-39 packages is in the order of 3
nanohenries; this inductance represents a reactance of

7.5 ohms at 400 MHz. If the emitter is grounded internaUy to a TO-60 package (as in the 2N5016), the
emitterlead inductance can be reduced to 0.6 nanohenry.
The plastic stripline package (used in the 2N5017) has
an emitter lead inductance of 0.4 nanohenry and a base
lead inductance of 0.6 nanohenry. The main advantage
of the rf plastic package is that a substantial reduction
in parasitic inductance is achieved· because the emitter
and base leads can be placed closer to the transistor
chip. Hermetic low-inductance radial-lead packages are
also available. The HF-19 package introduced by RCA
utilizes ceramic-to-metal seals and has rf performance
comparable to that of anrf plastic package. The parasitic
inductances can be reduced further in a hermetic coaxial
package. The HF-11 package used in the 2N5470 has
parasitic inductances in the order of 0.1 nanohenry.
Table II compares the performance of the TO-39
package, the HF-19 hermetric stripline package, and the
HF-11 coaxial package with the same transistor chip.
At a frequency of 1 GHz and an input power of 0.3 watt,
TABLE II - Package Inductances with same transistor
chip.
Using Same Transistor Chip

I-GHz
TO -39
HF -19
HF - 11
HF - 11

Pin-W

Po-W

P.G.-dB

7)c (28 V)-%

0.3
0.3
0.3
0.3

1
1.5

5
7
8.6
5

35
45
50
35

2.2
1

the coaxial package performs significantly better than
either the stripline or the TO-39 package. The coaxial
package results in an increase of output power by a
factor of two as compared to the TO-39 package. In
addition, the coaxial-package transistor is capable of
delivering an output of more than 1 watt with a gain of
5 dB at 2 GHz. A weU-designed coaxial package outperforms any other rf package currently available.

392

Reliability Consideration

When the rf capability of a transistor has been
established, the next step is to establish the reliability
of the device for its actual application. The typical
acceptable failure rate for transistors used in commercial
equipment is 1 per cent per 1,000 hours (10,000 MTBF);
for transistors used in military and high-reliability
equipment, it is 0.01 to 0.1 per cent per 1000 hours. Because it is not practical to test transistors under actual
use conditions, de or other stress tests are Donnally used
to simulate rf stresses encountered in class B or class C
circuits atthe operating frequencies. Information derived
from these tests is then used to predict the failure rate
for the end use equipment. The tests generally used to
insure reliability include high-temperature storage tests,
dc and rf operating life tests, dc stress step tests, burnin, temperature cycling, relative humidity, and highhumidity reverse bias. The end-point measurement for
these tests should include collector-to-emitter voltage
VCEQ' in addition to the common end points collector-toemitter current ICEO ' collector-to-base voltage VCBO'
collector-to-emitter saturation voltage VCE(sat), power
output, and power gain.
One of the common failure modes in uhf/microwave power transistors is degradation of the emitter-tobase junction. The high-temperature storage life test
and the dc and rf operating life tests can excite this
failure mode. The failure mode can be detected by
measurement of VEBO' which is not included in most
life-test end-point specifications.
Plastic uhf power transistors are more sensitive
to emitter-to-base-junction degradation than similar
hermetic devices. It is believed that the enhancement
of this failure mode in plastic devices is caused by
moisture penetration into the very close geometries used
in uhf power transistors. Temperature cycling is also
a problem that affects the reliahility of uhf plastic
power transistors because large thermal-expansion differences exist between the plastic and the fine bonding
wires (usually 1 mil) used in the devices.

UHF power transistors are complex electrical,
thermal, chemical, and mechanical systems. The well-

AN-3755
designed uhf power transistor is a systems solution to
the integration of these parameters. It appears that the
plastic environment is a less viable solution to this
systems problem than a hermetic approach. Although a
plastic environment has been an excellent systems
solution for low-frequency and vhf power transistors, in
which much larger bonding wires, metallic strips, and
rugged device geometries are used, it is not a completely
satisfactory solution for uhf power transistors.
Safe.Area Curves for RF Operation

The important parameters of a transistor which
are directly related to reliability and rf performance
include rf breakdown voltages, thermal characteristic,
and load-:-mismatch capability.
Although a safe-area curve to avoid second breakdown on the collector-current-vs-collector-to-emitter voltage (lc - VCE) plane can be established for forward-bias
or class A operation, such a curve for class B, class e,
or pulsed operation is difficult to define because the
breakdown voltages under r,f conditions are considerably
higher than the dc breakdown voltages, and the thermal
resistance is a function of VeE and Ie. The safe operating area for class B or C conditions at rf frequencies
is a function of these parameters, as well as the thermal
time constant of the device. In general, the safe operating area for class C or B operation can be expected to
be higher than that for dc conditions.
VSWR capability, or the ability of an rf power
transistor to withstand a high VSWR load, is another
important consideration. VSWR capability is a function
of frequency of operation, operating voltage, and circuit
configuration. A well-designed circuit operated at low
supply voltage at a frequency at which power gain is
not excessive is less prone to VSWR mismatch. Four
modes of difficulty are experienced in the load-mismatch
test, as follows:

Pulse Operation of RF Power Transistors

A large potential application for rf power transistors is in pulse equipments such as DME (distance
measuring equipment), CAS (collision avoidance system),
and radar. The ratio of peak to average or cw power
obtainable with a transistor is much less than that which
can be obtained with a vacuum tube because a transistor
is a current-amplification device, while a vacuum tube is
a voltage-amplification device. The ability of an rf power
transistor to deliver higher pulsed output power than cw
power depends on the transistor current-handling capability, thermal capability, and rf voltage capability. No
significant improvement in power output or gain can be
achieved if an rf power transistor is operated under pulse
input conditions at the same supply voltage and the same
input power level used under cw conditions. FigA shows
curves of peak output power as a function of duty cycle
for two transistor types: the2N5016 measured at 225 MHz
and 400 MHz, and the 2N5470 measured at 2 GHz.
These measurements were performed with a constant
supply voltage of 28 volts and constant input-power
pulses of 5-microsecond duration applied at various
pulse repetition rates (PRR). At the same peak input
power level, the gain and power output remain approximately the same for duty cycles ranging from 100 per
cent (cw) down to 0.1 per cent.
Fig.S shows the 2-GHz amplifier circuit used for
the measurements shown in Fig.4. The 2N5470 transistor is placed in series with the center conductor of
the line, or cavity, and its base is properly grounded to
separate the input and output cavities. The input section
consists of a 20-ohm line section and a capacitance C t ,
The output section consists of a 36-ohm line section and
capacitances C 2 and C3 , Direct coupling is used at both

'Or---~~~----------'---------,

Vee ~ 28 VOL T5

PULSE WIDTH =5,..5

(1) slow thermal failure as a result of low rf swing
and very poor efficiency;

25~====12~N5c50¢.'6~f~""22~5MM",H'~~Pi~""75~W----~

(2) high-speed failure as a result of the high
positive peak value of rf swing;

~ 20~--------}---------+---------~

(3) an instability (non-destructive) which occurs
because the high value of VeE causes avalanching (such a condition in the commonemitter configuration produces a negative resistance characteristic and results in a spurious
signal generator);
(4) an instability caused by the negative overs wing
which can severely forward-bias the collectorbase junction and trigger a low-frequency oscillation which resembles a motorboating or
squelched oscillation.
Additional work is required for further characterization
of transistor parameters, as related to VSWR capability,
rf breakdown, and safe operating area.

~

>>-

I

>-

§
~

1 5 - 2 N 5 D I 6 - f 4QOMHz

Pin-5W~

~

W

~
~

~

~

,~--------+---------+---------~

2N5470

0.1

f=2GHz

1.0
10
DUTY CYCLE-PER CENT

100

Fig.4 - Peak output power as a function of duty cycle
for the 2NS016 and 2NS470 transistors at selected
frequencies.

393

AN-3755
Fig_7 shows peak power output as a function of duty
cycle for the 2NS470 at a frequency of 2 GHz and a

JL l--lJJ -_. -I--~-}- -

Vee·28 VOLTS
f:2GHz
PULSE WIDTH. 5 ,..,

2

-

,.-

JLI

,
0
QI

input and output. Fig.6 shows the 400-MHz lumpedelement amplifier circuit used for the 2N5016 pulse
measurements.

-l~

~=
CI = I to 10 pF, piston capacitor
C2,C3,C4,CS,C6 = I to 30 pF, piston capacitors
C7 = 0.01 pF, disc, ceramic
Cs = 1000 pF, feedthrough
LI = 1/4-inch 0.0. copper tubing; 1-1/4~nches long
~ =

12 I'H, choke

La = 0.27 ohm, wire wound

L4 = I/S-by 1/32-by SIS-inch long copper strip
LS = 1/4-inch 0.0. copper tubing, 2-1/4-inches long
Note 1 - LI and LS are mounted coaxially within a
I-S/S-by I-S/S-by 6-inch box_
Note 2 - For optimum performance Ca should be mounted
between emitter and base with minimum lead lengths.

Fig.6 • A 400·MHz amplifier circuit that uses a 2N5016
transistor.

394

. .,

!

I

I

I

riB GAIN I

,

. .,

~

--i-

i"iB GAIN
10

1

,

DUTY CYCLE-PfR CENT

! ,i ,!
100

Fig.7 - Peak output power as a function of Juty cycle
for the 2N5470 transistor operating at 2 GHz.
constant supply voltage of 28 volts with input power as
a parameter. Under cw operation in the 2-GHz amplifier
circuit shown in Fig.S, an increase of input power from
0.3 to 0.5 watt does not result in an increase of power
output, i_e., the power output seems to be saturated at
1.1 watts. However, under pulsed input conditions of
5-microsecond pulse duration and 10-per-cent duty cycle,
the output power increases substantially from 1.1 watts
to 1.9 watts as the input power increases from 0.3 to 0_7
watt. These requirements indicate that the power input
to the 2N5470 transistor at 2 GHz under cw conditions
is limited. by thermal capability rather than by peak
current or periphery. This transistor appears to be
capable of operating at much higher peak current under
pulse conditions than would be permissible under cw
conditions. This improvement is possible because the
pulse duration of 5 microseconds is probably smaller
tl.an the thermal time constant of the transistor, and the
junction temperature is more a function of average device
dissipation than of peak dissipation. A silJliIar improvement in peak power output and gain can be obtained by pulse operation of the 2N5016 at 225 MHz, as
shown in Fig.S, but the improvement is not as great as
that obtained for the 2NS470.

.

o VCE"2BVOLTS
'*225 MHz
PULSE WIOTH*,I"

I

~

..

idBGAIN

7r

GA1N

Bj8GAIN

"
10

0.1

The major difference between cw and pulse operation, however, is that the input drive level can be
increased substantially under pulsed input conditions.

,

,

! td8~~--t"--'_

Id3W

I

Fig.5 - A 2-GHz coaxial amplifier circuit that uses
2N5470 transistor.

4.4d8 GAtN

! j,w

.,

,

..
,

,

,,I
10

I
,i8
.dB

T
. .I
Br

,

,

DUTY CYCLE-PER CENT

Fig.8 • Peak output power as a function of Juty cycle
for pulse operation of the 2N50J6 transistor at 225 MHz.

AN-3755
A second major difference between cw and pulse

operations is that a transistor can be operated at much
higher voltage under pulse conditions. Fig.9 shows
peak power output as a function of supply voltage Vee
for the same transistor types (the 2N5016 measured at
225 MHz and 400 MHz, and the 2N5470 measured at
2 GHz). These measurements were performed with constant peak input power pulses at 1-per-cent duty cycle
and 5-microsecond pulse duration. At an input power
level of 0.5 watt, the 2-GHz power output of the 2N5470
increases from 1.9 watts at 28 volts to 2.5 watts at 45
volts. At an input power of 9 watts, the 400-MHz power
output of the 2N5016 increases from 25.5 watts at 28
volts to 40 watts at 45 volts. At 225 MHz, the increase
in power is even greater. These results indicate that
0

2~5016.f.~25
MHZ!
PJN"9W

0

0

/'"

/'

~ ......----

/

Vi

-

~OOMH'._
PIN=9 W

IN EVERY CASE

PULSE OURATION=5,..5
DUTY CYCLE:- I %

4

2N5470,f=2GHz,-t-

--

2

15

20

25

30

l'N:~t

I

45

50

35

40

55

band applications must be capable of providing both the
required power output within the entire frequency range
of interest and constant gain within the passband. The
bandwidth of a transistor power amplifier is limited by
the following: intrinsic transistor structure, transistor
parasitic elements, and external circuits such as input
and output circuits.
Intrinsic Transistor Structure

The parameters which determine the inherent bandwidth of a transistor intrinsic structure are the emitterto-collector transit time, the collector depletion-layer
capacitance, and the base-spreading resistance. The
emitter-ta-collector transit time, which represents the
sum of the emitter-capacitance charging delay, the base
transit time, and the collector depletion-layer transit
time, affects the over-all time of response to an input
signal. Of particular importance is the emitter-capacitance charging delay, which is current-dependent and
equal to 11fT, where fT is the gain-bandwidth product
of the transistor. A high fT is essential for broadband
operation; in addition, a constant fT with current level
is required for large-signal operation. The ratio of the
fT to the product of the base-spreading resistance and
the collector depletion-layer capacitance (rbCc) comprises
the gain function of a transistor.
Under conjugate-matched input and output conditions, the power gain as a function of frequency (which
is equal to fT/87Tf:lrbCc) falls off at a rate of 6 dB per
octave. In a power amplifier, the power gain usually
decreases by less than 6 dB per octave, as shown in
Fig.lO(a), because the load resistance RL presented to
the collector is not equal to the output resistance of

SUPPLY VOLTAGE 1VCC)-VOLTS

Fig.9 - Peak output power as a function of supply voltage
for the 2NS470 and 2NS016 transistors at selected

Vee

frequencies.

FALL OFF OF
6 dB TO 3dB PER OCTAVE

rf power transistors can be operated at much higher voltage under pulse conditions, and, consequently, can
deliver more pulsed power. It appears that rf power transistors can withstand much higher voltage under shortpulse conditions without operating in the second-breakdown region. The average current resulting from shortpulse operation is much lower than that of cw operation.

FREQUENCY
(0)

Broadband Power Amrlifier

RF power transistors are often used in broadband
amplifier circuits for commercial and military applications. Transistor transmitters are superior to tube
transmitters with respect to broadband capability, reliability, size and weight. The aircraft communication
bands of 116 to 152 MHz and 225 to 400 MHz are of
interest for both military and commercial applications.
Another area of interest is ECM (electronic countermeasures) applications. Transistors suitable for broad-

Pin

I ii
.L.- ' . : _ - ' . : _

I

'2

I')

Fig.10(a) - Output power as a function of frequency in
a power amplifier; (b) equivalent broadband amplifier.

395

AN-3755
the transistor, but is dictated by the required power output and the collector voltage swing. The curve in
Fig.10(a) indicates that one approach for achieving a
broadband transistor amplifIer is to optimize the matching
at the higher end of the frequency band and to introduce
mismatch in the input, or output, or both at the lower
end of the band so that a constant power output is obtained from f1 to f2' as shown in Fig.10(b). The power
output that can be obtained in a transistor broadband
amplifier is comparable to that measured at the high end
of the band in a narrowband amplifier; efficiency and
power gain are slightly lower than in a narrowband
amplifier because the load and source impedance cannot
be ideally matched to the transistor over a broad frequency band.
The disadvantage of this approach for broadbanding
is the relatively high input VSWR at the low end of the
band.
A more sophisticated approach for achieving
broadband performance is to consider the intrinsic tran·
sistor struchrre, the transistor parasitic elements, and
the external circuits as part of the over-all band-pass
structure, in which the input and output circuits are
coupled together by the transistor feedback capacitance.
This combined structure reproduces the power-output or
power- gain curve of Fig.10(a) from f1 to f2' External
feedback is then applied to control the input drive to
flatten the power output over a broad frequency band.
Parasitic Limitations

Any discrete transistor contains parasitic elements
which impose further limitations on bandwidth. The most
critical parasitics are the emitter lead inductance Le and
the base inductance Lb' These parasitic inductances
range from 0.1 to 3 nanohenries in commercially available
rf power transistors. In the simple representation of a
commo~-emitter equivalent transistor input circuit at high
frequency shown in Fig.l1, the inductance Lin represents

External Circuits
For a broadband amplifier circuit to deliver constant power output over the frequency range of interest,
a proper collector load must be maintained to provide
the necessary voltage and CUfrent swings, and the input
matching network must be capable of transforming the low
input impedance of the transistor to a relatively high
source impedance.
Suitable output circuits for broadband amplifiers
include constant-K low-pass filters, Chebyshev filters
(both transmission-line and lumped-constant), baluns,
and tapered lines. Fig.12(a) shows a conventional
constant-K low-pass filter. The input impedance Z11
is substantially constant at frequencies below the cutoff frequency '" c = 1/ LKC K . A constant collector
load resistance can be obtained if the shunt arm (1-1)
of CK is split into two capacitances, as shown in
Fig.12(b); part of the capacitance represents the Cob of
the transistor,. and the other part has a value which·
makes the total capacitance equal to C K . Further improvement of bandwidth can be obtained by cascading
of more sections.

J

Fig.12(c) shows a short-step microstrip impedance
transformer which consists of short lengths of relativelyhigh-impedance transmission line alternating with short
lengths of relatively-low-impedance transmission line.
The sections of transmission line are all exactly the
same length; the length of each is "-/16. A constant
load resistance can be maintained across the collectoremitter terminals over a wide frequency band if the
circuit .is designed to have a Chebyshev transmission
characteristic 1 ,2. Fig.12(d) shows a lumped-equivalent

zIB
I

LK

I

2

2

LK=RL/"'C
CKEII"'CRL

LK

r1W}CK
:RL

~+COb
- ,
--=1-

(0)

(b)

TIE

Fig.1I - Equivalent input circuit of an rI power transistor.
the sum of the base parasitic inductance and the reflected emitter parasitic inductance, and Rin is the
dynamic input resistance. The real part Rin is inversely
proportional to the collector area and, therefore, the
power-output capability of the device; the higher the
power output, the lower the value of Rin' A low ratio
of the reactance of Lin to Rin is important as the first
step in broad banding and for ease of circuit design.
Unless the reactance of Lin is appreciably lower than
the input resistance R in , the reactance must be tuned
out and thus the bandwidth limited.

396

(d)

(oj

Fig.12( a) - A canventiona I canstant-K low-pass fi Iter;
(b) a method of obtaining a constant-callector load
resistance; (c) a short step microstrip impedance trans·
f.,mer; (d) a lumped-equivalent Chebyshev Impedance
transformer.

AN-3755
Chebyshev impedance transformer which consists of a
ladder network using series inductances and shunt
capacitances. Transmission-line as well as strip line
baluns with different step-down ratios (4:1, 9:1, 16:1)
can also be used in the output to provide the broadband
impedance transformation.
One difficulty in broad banding a transistor power
amplifier is to maintain the desired bandwidth in an
input circuit which provides the required impedance
transformation from the extremely low input impedance
of a transistor to a relatively high source impedance.
The design of the input circuit depends on the approach
chosen: optimizing the matching at the high end only,
or using the transistor parasitic elements as part of a
low-pass structure. A simple way of optimizing the
matching at the high end is to introduce a capacitance
between the base and the emitter terminals of the transistorto tune out the reactive part of the parallel equivalent input impedance of the transistor. The networks in
Fig.13 show that the lower the inductance Lin or Qin'
the less frequency-sensitive is the equivalent parallel
resistance Req' This arrangement also provides a first
step-up transformation for the real part of the input impedance of the transistor. When a capacitance is connected to the network of Fig.13(a), the circuit has .the
same form as a half-section of a constant-K low-pass
filter. If the cutoff frequency w c = 1/ JLin C is high as
compared to the frequency of interest (f2 in Fig.lO), the
total input impedance of the transistor input and the
capacitance C combination is approximately equal to
Rin /(I-"?/CLc 2) and is constant if(~/CLC2) LL1.
The remaining step is to design a proper network
to provide the necessary impedance transformation over
the entire frequency band. Circuits suitable for the
input include multi-section constant-K filters, Chebyshev

~"'

X ln : ... L ln

am" X1n/R,n

(oj

B

:TI

Req 'Rin(I+Qln 2 )

Xeq=X.nll+

Oi~zl

(bi

ill

Re [VBE]~ II RlnU + Qrn 2 )

(-!:'o)' -,
Iln[VBE]: - - , Xin(l-t Qinzl

(oj

Fig.13(a) - Series equivalent input circuit of an rf power
transistor; (b) equivalent parallel input; (c) equivalent
parallel input circuit with external base-emitter
capacitance.

filters, and tapered lines. A more sophisticated approach
to obtain a broadband transformation in the input is to
treat the parasitic inductance Lin of Fig.ll as part of
the transformation network. For example, Lin can be
considered as one arm of the Chebyshev low-pass filter
of Fig.12(d). For a given bandpass characteristic, the
number of sections increases .with the value of Lin.
Again, therefore, low package parasitic ·inductance is
important.
The 2N5919 Transistor
At present, plastic uhf power transistors are used
exclusively in 22S-to-400-MHz broadband applications.
UHF plastic packages have substantially lower parasitic inductances than either TO-60 or TO-39 packages,
as discussed previously.

The introduction of the RCA hermetic low-inductance stripline package makes it possible to design
broadband power amplifiers without compromising reliability. This new radial-lead package utilizing ceramicto-metal seals is superior to uhf plastic packages in two
respects: it has lower parasitic inductances, and it is
hermetically sealed. For example, the RCA-2N5919 transistor, first in a series of hermetic radial-lead devices,
has a dynamic input impedance of 1.5 + j 1.2 at 400 MHz.
Fig.14 shows typical curves of power output and efficiency
as a function of input power for the 2N5919 at a frequency
of 400 MHz and a collector-to-emitter voltage of 28 volts.
This transistor is capable of delivering an output of
19 to 20 watts with gain of 6.5 dB and collector
efficiency approaching 70 per cent at 400 MHz. One
important feature of this device is that the power gain
is linear with 1.6 dB at power levels between 7 and
20 watts. The 2N5919 is also capable of an output of
20 watts with gain of more than 10 dB at 225 MHz, as
shown in Fig.15.
High-Power Generation
When more rf power is required than can be provided by a single transistor, combining techniques
must be used. Two of the more commonly used methods
of combining transistors to obtain high power are: (1)
the "brute-force" method of paralleling several transistors at a single point, and (2) the use of hybrids to
combine several individual amplifier chains or modules.
RF power transistors can be directly paralleled at
a single point, as shown in Fig.16. All collectors and
bases are connected together, and a single input matching
circuit and a single output matching circuit are used.
Although this arrangement offers circuit simplicity, it
has several disadvantages. First, the transistors used
must be matched for power output and power gain at the
desired frequency to obtain good load sharing. Second,
direct paralleling of a large number of transistors at a
single point leads to poor reliability; a failure of one
transistor usually causes a total failure of the over-all
amplifier circuit.

397

AN-3755

(iV

20
,.T00MH,1

GAIN

VC C =28VOLTS

./

18

h

16

i'?

i

./"

14

c/

!
~

--"
GA/ V

/V

V
4dB
GAIN

EFFICIENCY

B.ld8

12

iwER

o
~

w

OUTPUT

~ 10

[7

;f5dB
GAIN

4

/

o

2.0

4.0

··POWER INPUT-WATTS

Fig.14 - Output power and·e/ficiency as lunctions 01
input power lor the RCA-2N5919 transistor at 400 MHz
and 28 volts.

8

J

VeE '2jVOLTS
26

Prn =4W ...............

t

I" .............

Pm=3W

2I-pm.2w~"

" ,,
"

'"

"

8

~~

P""WI\
4

GAIN

6'~~~N

i\.

~

""

'\ ~ ~~ ~ ~

o I--Pi"05WI~

Fig.16 - A method 01 paralleling rl power transistors at
a single point.

""~6d8 ~ r--..........
I--- I--~
GAIN

6

7.ad8

GAIN

2

0
100

200

300

----

400

500

soo

700

FREQUENCY-MHz

Fig.IS - Output power as a' function ollrequency in the
RCA'2N5919 at 28 volts.

398

Of particularimportance is the reduction in both input and output impedances resulting from paralleling transistors. The impedance level can be of the same order as
the rflosses in the input and output elements. The input
resistance of an rf power transistor at 400 MHz is typically
1 to 5 ohms. If a O.l-microhenry inductor with an unloaded Q of 150 is used in the input circuit, the rf loss
in the inductor at 400 MHz is 1.6 ohms (Rloss = ·",L/Q).
This rf loss increases as more transistors are paralleled.
Consequently, the total power output which can be
obtained from several transistors paralleled at a single
point is less than the calculated total power output.

AN-3755
Flg.17 shows the paralleling efficiency a~ a function of
the number of transistors in direct parallel 3 . Paralleling
efficiency is defined as the ratio of the measured total
power output to the calculated total power output (i.e.,
the number of units multiplied by the power output of an
individual unit). The paralleling efficiency decreases
rapidly as the number of transistors increases. For
example, when the 2N5016 is used at a frequency of
400 MHz and a collector-to-emitter voltage of 28 volts,
the paralleling efficiency is 95 per cent for two transistorsconnected in parallel, 90 per cent for three transsistors, 85 per cent for four units, and 55 per cent for
eight units.
100",,-,.--,--,.--,---,---,---,
~

z

w
u
~

90

w

'I
1;
:0

80

u

~
"z

70

~

w

~
~

~
~
~
~

NUMBER OF UNITS PARALLELED-N

Fig_17 - Efficiency as a function of the number of transistor in parallel.
Most of the disadvantages of the "brute-force"
direct-paralleling method can be avoided by a more
sophisticated approach, shown in Fig.18, in which
several amplifier modules or chains are combined by
the use of an input hybrid divider and an output hybrid
combiner. This arrangement provides a reliable and
efficient method of achieving high vhf/uhf power. Reliable operation results because of the isolating properties of the hybrid. A failure of one amplifier chain or
module reduces the total power output, but does not
cause failure of the other amplifier chains or modules.
In addition, this arrangement provides a highly efficient

A hybrid is an n-port network used as a constantimpedance circuit for power summing and dividing. It
maintains phase and amplitude equality between any
number of outputs, and also provides isolation between
matched outputs. Fig. 19(a) shows a two-way transmissionline hybrid power divider which consists of two quarterwave trans miss ion lines. each having a characteristic
impedance of Zo = {2 Ro.4 The generator port 1 and
distribution ports 2 and 3 are terminated by resistors
Ro' A lumped resistor of value Ro is connected from
each of the distribution ports to a common point. When
a signal is fed into the power divider (port I), it divides
by virtue of symmetry into two equiphase and equiampIitudeports. Nopowerisdissipated by the resistance
R when matched loads are connected to the outputs because port 2 and 3 are at the same potential. The input
(port 1) of the power divider is also matched when the
conditions for isolation between the two outputs are
satisfied. The input impedance of port 1 is the parallel
combination of the two output loads Ro after each has
been transformed through a quarter-wavelength of the
line ZOo If a reflection or mismatch occurs at one of
the output ports, the reflected signal splits; part travels
directly to the input, splits again, and then returns to
the remaining output port. Thus, the reflected wave
arrives at the remaining output port in two parts; the
path-length difference between the two paths of travel
is 180 degrees out of phase when the lines are "-/4 in
length. The value of the resistor R is properly chosen
(R = Ro) so that the two parts of the reflected wave are
equal in amplitude and 180 degrees out of phase; thus,
complete cancellation occurs. The hybrid shown in
Fig.19(a) can also be used as a two-way combiner (i.e.,
power introduced at ports 2 and 3 will combine or add
at port 1). The lumped equivalent of the quarter-wave
transmission-line hybrid is shown in Fig.19(b).

method of combining vhf/uhf power because the insertion

loss of a hybrid is small.

-iloonJ
loon

-jloon

50n
j50
~~~L~,~~~~~50n

r-iloon
(OJ

Fig.IB, - Use of hybrids to combine several individual
amplifiers.

Fig.19(a}-A two-way,. transmission-line, hybrid power
divider; (b) a lumped-constant equivalent of this power
divider.

399

AN-3755 - - - - - - - - - - - - - - - - - - - - - - - - - - - - The. technique illustrated in Fig.19 can be extended to an n~way power divider or combiner, as shown
in Fig.20. 4 The characteristic impedance of each quarter-wave line should have a characteristic impedance of
Zo =
Ro ' and the resistor R should have a value of
Ro'

Fn

,

AI.

AI'
2

".0-'

".
Zo=,foRo

balance of this ring is not a function of frequency, its
bandwidth can be expected to be wide. The quadrature
hybrid accepts an input signal at any of its four ports,
and distributes half to a second port and half to a third
port with 90-degree or quadrature phase difference. The
fourth port is isolated.
The choice between hybrids and single-point paralleling for high-power generation depends on the required
over-all performance, size, and cost. The most effective
system usually employs hybrids to combine several amplifier chains in which several transistors are connected
in parallel. Consideration must be given to both the
paralleling efficiency (shown in Fig.17) and the insertion
loss of the' hybrid. As a rule of thumb, direct singlepoint paralleling should be used for applications in which
maximum power output is essential up to a point where
the reduction of output power causefl by decreasing
paralleling effiCiency approaches that results from
the insertion loss of the hybrids. Fig.22 demonstrates

Fig.20 - N-way, quarter-wave hybrid.
Fig.21(a) shows another hybrid, the 6 ,,/4 ring.
Each port is separated from the adjacent port by a >--/4
section, except for the 3 >--/4 section between ports 3
and 4. Because of this arrangement, power introduced
at port 1 appears at equal levels at the adjacent ports
(2 and 4), but does not appear at the opposite port 3.
In a similar way, power introduced at ports 2 and 4
combines or adds at port 1.
The VSWR and the isolation of both the 6 >--/4
hybrid ring of Fig.21(a) and the "/4 hybrid of Fig.20
are sensitive to frequency deviations. A version of the
hybrid ring which is less sensitive to frequency deviation
is the quadrature hybrid. shown in Fig.21(b), in which the
3 >--/4 arm of the 6 ,,/4 hybrid ring is replaced by a
frequency-insensitive reversal of phase. Because the

AMPLIFIER MODULE

'"

~
INPUT

;;
5

0

~
'i

:5z
a;

8"

OUTPUT

0

~
"

Fig.22 - Blocle diagrams 01 sing/e-po·int paralleled and
hybrid systems used to generate 200 watts 01 cw power
at 400 MHz.
the use of such techniques to generate cw power of 200
walts at 400 MHz. The system consists of a four-to-one
hybrid divider, four amplifier chains or modules, and a
four-way hybrid combiner. Each individual amplifier
module utilizes four 2N5016 units connected in parallel
and driven by a single 2N5016. With a supply voltage
of 28 volts, each module is capable of delivering output
power of 54 walts at 400 MHz with gain of 12.4 dB and
collector efficiency of 50 per cent. The four-to-one
hybrid combines the output of four modules to produce
cw power of 200 walts at 400 MHz.

d,~~U:L CDf--____.!:O pF, feedthrough; Allen-Bradley FB2B or equiv.

RF chokes - 3 turns No. 30 wire, *6 in. (1.59 mm) 10, %6 in. (4.75

resistance. Capacitor C l , in conjunction with the small
fringe capacitance at the input end of the input line,
acts as a reactive divider network for the final transformation to the 50-ohm resistance of the driving
source.
The output load impedance required for the 1.2-watt
output is approximately 6.5 + j35 ohms at 20Hz and
is transformed by L 2 , which has an electrical length of
approximately %,\" and an impedance of 36 ohms.
The electrical length of L2 is approximately 110 degrees
when correction is made for capacitive loading effects
at the collector end of the line, dielectric loading effects
of the beryllium oxide heat-sink washer shown in Fig.
8, and fringing field effects at output capacitors C 2 and
Ca. A %,\, line section was used in the output circuit
in this particular design, rather than an eighth-wave
section because of the difficulty of incorporating capacitor C" near the end of L2 (which would be required
for the step-up needed with the ,\/8 line). The %'\'line
section performs in the same manner as the eighthwave line length, but has somewhat increased line
losses as a result of the large increase in line length.
Typical performance curves for a 2N5470 transistor
in the circuit of Fig. 7 are shown in Fig. 9. Bccause a
network transformation is used in this circuit, the 3-dB
bandwidth is only of the order of 6 per cent.

mm) long

Ll L2 -

coaxial lines, see Fig. 8 for details
1.4

COLLECTOR-Ta-BASE VOLTAGE- 2av

Fig. 7 . A 2·GHz coaxia/·line power· amplifier circuit.

base is grounded in such a way that the input and
output lines are separated as shown in Fig. 8. In Fig. 7,
the input line Ll has a characteristic impedance Zo of
20 ohms and is approximately 0.80 inch long. This line
length (including the effects of the capacitive loading
at the base flange and the fringe line effects introduced
by capacitor C l ) is 0.21},. (where ,\,. is the wavelength
for a given circuit) and transforms the input impedance of 7.5 + j8 ohms to about 53 ohms of real

FREQUENCY"2 GHI

2

/

.,

;:0I
...
~
6

..."'
~

I

/

//

•

o.

I 40

I
/

,,<;/

~'I

QS

V

I60

I

/

/

11/
I

0.4

0. 2

o

/

60

40

0..

0.2
0.3
POWER INPUT-W

0..

Fig. 9 - Typical performance curves for the 2N5470 in the
2-GHz coaxial-line power amplifier ef Fig. 7.

l-GHz Coaxial-Line Pewer Amplifier

Fig. 8 - Construction details for the 2-GHz ceaxia/·line
power amplifier shewn in Fig. 7.

The design of a I-OHz coaxial-line amplifier circuit
is similar to that for the 2-0Hz circuit and fixture
shown in Fig. 7 and 8. However, because of the increased device dissipation at 10Hz, the coaxial lines
are loaded with boron nitride insulation to reduce the
thermal resistance between the active device and the
external heat sink as represented by the outer coaxialline cylinder in Fig. 8. Boron uitride has thermal and

405

AN-3764
electrical properties similar to those of AI 2 0., and has
the additional advantages of being readily machinable
and non-toxic.
The input line of a I-GHz coaxial-line power amplifier has an electrical length equal to 23 per cent of a
wavelength and transforms the input impedance of
approximately 3 + j I ohms to a real component of
about 49 ohms. Capacitor C t is used in conjunction
with input stray capacitance to match the value of 49
ohms to the SO-ohm driving source. The actual line
length, corrected for capacitive and dielectric lo~ng
effects as well as fringe line effects, is about I mch.
The characteristic impedance of the line is about 30
ohms for an air line or about 13 ohms when the line
is loaded with the boron nitride dielectric.
The output line is basically a %>. transformer which
transforms the complex output load impedance of
about 12 + jS3 ohms to a real component of about
270 ohms. Capacitors C2 and C" are reactive dividers
and step down this resistance to the SO ohms required
at the output. The actual line length, again corrected
for loading and fringe field effects is about 1.64 inches
The loaded output line impedance is approximately 27
ohms.
The use of' the boron nitride dielectric makes possible the design of a I-GHz coaxial-line amplifier circuit comparable in size to the 2-GHz coaxial-line
circuit designed with air lines. Therefore, a substantial
reduction in the size of the 2-GHz amplifier circuit is
possible when the dielectric loading technique is used.
In addition, improvement in power gain and efficiency
can be expected because of the improved thermal resistance between the active device and the final heat
sink.
The construction of a I-GHz amplifier is, as mentioned above, similar to that shown in Fig. 8 except
that the beryllium oxide washer is not used; press-fit
boron nitride cylinders form the dielectric portion of the
coaxial lines. In both circuits, the fixture is.built with
separate coaxial-line cavities for input and output; the:
cavities are locked together across the 2NS470 base
flange by means of a locking nut. Although tuning of
the amplifiers is not critical, some adjustment of the
wire rf chokes (by spreading or closing of turns) may
be required for optimum performance at each frequency. Thus, the rf chokes can be used as a fine adjustment of the terminating impedance.
1.6-GHz Stripline Power Amplifier

Although the 2NS470 transistor is designed primarily for coaxial-line use, it can also be adapted to
stripline and microstripline circuits. Fig. 10 shows. an
experimental microstrip circuit capable of developmg
a power output of 900 milliwatts over the range of 1.6
to 2 GHz with a drive power of about 200 milliwatts.
Collector efficiency at 1.6 GHz is of the order of SO per
cent with a collector supply voltage of 28 volts.

406

TYPE
2N5470

1

300 pF

50-0HM
OUTPUT

+2BV

Fig. 10 - An experimental 1.6·to-2·GHz broadband
microstripline amplifier.

The input line of this circuit has a characteristic
impedance of 8 ohms, and is constructed of S-mil
copper sheet mounted on the circuit ground plane with
S-mil Dupont H-Film* as the dielectric. A conducting
strip of the copper only 0/,. 6 inch wide is su~cient. to
provide the 8-ohm line impedance. The phYSIcal hne
length of 0.4 inch is equivalent to an electrical length
of an eighth wave and transforms the complex input
impedance of approximately S.3 + j6. ohms to a real
component of about 21 ohms. Capacitor C t , a copper
strip S mils thick located in the vicinity of the ~ 50picofarad dc blocking capacitor is used to reactively
match the value of 21 ohms to the 50-ohm source
impedance.
The output line is a tapered line section constructed
of Va.-inch teflon-fiberglass board. The characteristic
impedance at the collector end is 35 ohms and is
approximately equal to the magnitude of the complex
load impedance of the device at 2 GHz (under circuit
operating conditions). The eighth-wave line section
(approximately 0.3 inch long) is tapered to a characteristic impedance of SO ohms at the output end of the
line and thus matches' the' output directly; the 300picofarad capacitor is used for dc-blocking purposes
only.
The VSWR is low at both input and output ports
over the range of 1.6 to 2 GHz. Below 1.6 GHz, the
input and output VSWR increases because of, mismatch
conditions; however, circuit power output. remains , essentially constant because of increased device gain at
the lower frequencies. As a resnlt, the experimental
1.6-GHz stripline power amplifier exhibits a relatively
flat output response of 900 milliwatts (with a 200milliwatt drive) over the range of 1.2 to 2 GHz.
Pulse Operation of the 2N5470

One major difference between cw and pulse operation of a transistor is the substantial increase in input
drive level possible under pulsed input conditions. The
ability of a transistor to deliver higher pulsed-o~tput
power than cw power depends on the transIstor
• Trademark of E.I. du Pont de Nemours and Co., Inc.

AN-3764

current-handling, thermal, and rf-voltage capabilities.
No significant improvement in power output or gain
can be achieved by operation of an rf power transistor
under pulse input conditions at the same supply voltage
and input power level used under cw conditions.
Fig. 11 shows peak power output as a function of
duty cycle for the 2N5470 operating under pulse conditions. Peak power was measured at a frequency of
2 GHz; the constant supply voltage was 28 volts. Under
pulsed input conditions with pulses of 2-microsecond
duration and 10-per-cent duty cycle, the output power
of a 2-GHz amplifier circuit such as the one shown in
Fig. 8 increases substantially from 1.1 to 1.9 watts as
the input power increases from 0.3 to 0.7 watt. When
COLLECTOR-TO-BASE VOLTAGE == 28 V
FREQUENCY'" 2 GHz
Pll.5E WIDTH -/0 MICROSECONDS
~

2 - POWER INPUT"O.7W

I

~

§
~

dsw

1.5

GAIN

I

~

~Q5

O.lW

I,

a.,

4.4d8

lBdiJ-

d3W

,

E

.

iT

.

i~i'

"

DUTY CYCLE-PER CENT

6

8'00

Fig. 11 - Peak power output as a function of duty cycle for
the 2N5470 operating under pulsed conditions.

the same circuit operates under cw conditions, an increase in input power from 0.3 to 0.5 watt does not
increase power output; in fact, power output stabilizes
at 1.1 watts. These measurements indicate that the
power input at 2 GHz under cw conditions is limited
by thermal considerations rather than peak-current
capabilities or emitter periphery. The 2N5470 transistor is thus be capable of operating at much higher
peak current under pulse conditions than would be
permissible under cw conditions.
A second major difference between cw and pulse
operation of a transistor is the much higher voltage at
which the transistor can be operated under pulse conditions. Fig. 12 shows the peak power output measured

at 2 GHz as a function of supply voltage for the
2N5470. The measurements were performed at a constant peak input power with pulses of 10-microsecond
duration and duty cycles of 1, 10, and 30 per cent. At
2 GHz and an input power level of 0.5 watt, the power
output of the 2N5470 increases from 1.9 watts at 28
volts to 2.5 watts at 45 volts. These measurements
indicate that the 2N5470 transistor can be operated at
much higher voltage under pulse conditions than under
cw conditions and, consequently, can deliver more
pulsed power.
Microwave Power-Oscillator Design ,

The 2N5470 transistor is suitable for use in microwave power oscillators at L-band and low S-band frequencies. The 2N5470 has high power amplification,
a necessary condition for good oscillator performance;
however, because of the high degree of isolation that
exists between the transistor chip and the case as a
result of the coaxial design, an external feedback path
must be provided to assure reliable oscillation at microwave frequencies. Except for this feedback loop, the
design of oscillator circuits is similar to that discussed
for amplifier circuits.
Fig. 13 shows the 2N5470 in its basic oscillator configuration, a Colpitts oscillator circuit. In this circuit,
the collector is grounded for maximum heat dissipation;
therefore, power output is taken from the base circuit.

50-OHM
OUTPUT

Fig. 13 - Basic o.ocillator configuration for the 2N5470, a
ColpiHs oscillator circuit.

....--,

2.• ...,====-~--,,---.--

2.4i--.---r---;--,1---b-"1---j

1

~ 2i--+---r-~

.
5

~ 1.6

~ Uf---Jn'-"7q..--+--f--+---r--I

OB,,\r.-~20;--;2\r.-~3,J;O;----<"~-'4,\;O;---,i4~'--'
SUPPLY VOLTAGE IYeel-v

Fig. 12 - Peak power output at 2 GHz as a function of
supply voltage for the 2N5470.

The parasitic elements of the 2N5470 (the parasitic
inductance L and the parasitic capacitances C 1 and C, )
can be made use of in oscillator design. The internal
package capacitance C, is usually insufficient to sustain oscillation and must be increased externally. The
Colpitts circuit shown in Fig. 13 can be changed to a
Hartley oscillator circuit if Land C1 are made external
components and C 1 is connected to the center point of
the inductor.
Reliable starting conditions are assured by use of a
slight forward bias in the common-base oscillator circuit through the bias network formed by resistors R,
and R 3 • Once oscillations have been started, the circuit

407

AN-3764

is biased toward class C operation by the base current
flowing through resistors Rl and R 2 • Resistor Rl also
serves as a limiting resistance which tcnds to maintain
the bias point at stable oscillator power-output levels.
Although many oscillator designs are possible, the
two circuits described in the following paragraphs are
descriptive of the types employing the 2N5470 transistor.
2-GHz Microstripline Oscillator

The circuit shown in Fig. 14 is a 2-GHz microstripline oscillator which can deliver 300 to 350 milliwatts
of rf power with a 24-volt collector supply. Altho,ugh
separate bias supplies are shown, a single "floating"
bias supply can also be used.
+24V

2-GHz Lumped-Constant Power Oscillator

The circuit shown in Fig. 15 has a single bias supply
and makes use of a grounded collector for better heat
dissipation. The c1rcuit is tunable over the range of 1.8
to 2.1 GHz and can deliver 300 milliwatts of output
power at 2 GHz with a 21-volt power supply. Circuit
operation is similar to that of a Hartley oscillator, with
Ll and the parasitic inductance of capacitor C 1 comprising the tapped inductance used in the feedback
loop. Tuning is provided largely by capacitor C 4 ; C3
is adjusted for optimum match to the load of 50 ohms.
Resistor Rl can be made variable (0 to 100 ohms) to
permit optimum adjustment of bias conditions. Output
power can be adjusted without great effect on the
oscillator frequency by variation of the value of resistor R 3 • A minimum supply of about 15 volts is
sufficient for stable circuit operation.

C.

~

i1
Cl C2 -

0.35-3.5 pFJ Johanson 4702 or equiv.
~ c..-l00 pF. feedlhrough, Allen-Bradley fASC or equiv.
Ll - 50-ohm miniature coaxial line, 1.5 in. (38.1 mm) long
L2 - microstrip line, '%2 in. teflon-fiberglass, 0.08 in. wide, 0.43 in.
long
L3 - microstrip line, 1,32 in. teflon-fiberglass, 0.03 in. wide, 0.7 In.
long
Rf choke - 5 turns No. 33 wire, 1;16 in. 11.59 mm) 10, %0 in. (4.75
mm) long

Fig. 14 - A 2-GHz microstripline oscillator.

A grounded-base configuration is used in the circuit;
output power is taken from the collector circuit in the
conventional manner. L2 is a section of microstripline
which provides the susceptance required to tune out
the output capacitance of the 2N5470. The real part of
the output load impedance (about 225 ohms) is transformed by a quarter-wave section of microstripline to
a real component of about 53 ohms. Capacitor C2 , in
conjunction with some stray capacitance C" is used to
match the circuit output to the 50-ohm load. Correctly
phased feedback is provided by the loop circuit formed
by Ll and C1 • Frequency adjustment over the range
of 1.8 to 2.1 GHz is controlled by capacitor C 1 •
The circuit of Fig. 14 is fabricated on a Ys 2 -inch
teflon-fiberglass board. The 2N5470 is mounted with
the base flange flat against the ground plane of the
board; a beryllium oxide washer provides a thermal
path between the collector post and the ground plane.
The 1.5-inch line section Ll is used to contact the base
of the 2N5470 on the other side of the board.

408

-24V

",

"2

",

C2~
RFC
C,

RFC

r----'I

TYPE
2N5470

50-OHM
OUTPUT

CI-0.82 pf, "gimmick", Quality Components Iype 10% QC or equiv.
C2 C6-100 pF, feedlhrough; Allen-Bradley FASC or equiv.
Ca CA-0.35-3.5 pF, Johanson 4701 or equiv.
Cs-O.Ol p.F, disc, ceramic
Ll- No. 22 wire. %4 in. (1.17 mm) long
RF chokes-4 turns No. 33 wire, *6 in. (1.59 mmJ ID, %6 in. (4.75
mmJ long
Rt - 51 ohms. 0.5 W
R2 - 1200 ohms. 0.5 W
R3-5·10 ohms. 0.5 W

Fig. J 5 - A 2-GHz lumped-constant oscillator circuit.

Wideband Power Oscillator Circuits

Althouglt the basic Colpitts oscillator circuit shown
in Fig. 12 can be. made a varactor-tuned wideband
oscillator by use of a high-Q varactor in place of the
inductance L, a simpler technique can be used with the
2N5470. Fig. 16 shows a proposed circuit using the
2N5470 which is capable of wideband single-screw
tuning. Basically, the circuit is the oscillator arrangement of Fig. 14 with the broadband tapered-line output section of Fig. 10. Capacitor C2 is selected for
best output match at the center oscillator frequency
desired, and capacitor C1 is used to control the oscillator over a bandwidth of approximately 20 per cent.

AN-3764
Class A and Class B Power Gain

Figs. 18 and 19 show the power gain of a 2N5470
transistor in a common-base amplifier configuration at
1 and 2 GHz, respectively. In each case, a class C curve
measured at a supply voltage of 15 volts is included for
reference.

-Vee

+Vcc

Fig_ 16 - A wideband single-screw-tuned oscillator circuit.

Biasing Arrangement for Class A and
Class B Operation

In addition to class C operation, the 2N5470 can be
used in class A or B service when large dynamic range
is required. Only common-base operation is discussed
in this Note because the 2N5470 is constructed with
the base connected to the flange. In such an arrangement, positive voltage must be supplied to the collector
and negative voltage to the emitter to permit forwardbiased operation. A 100- to 200-ohm resistor should
be connected in series with the emitter to bias the
entitter and to prevent excessive collector-current flow.
If one power supply with a grounded negative or
positive line is used, the base of the 2N5470 must be
dc-isolated from ground. One method of accomplishing this isolation is to use a thin tape material, such as
I-mil Mylar> tape, between the ground plane and the
flange or base of the transistor. The resulting capacitance between the flange and the ground plane through
the tape dielectric provides a satisfactory bypass for
the base. A low-frequency bypass must also be provided along the base power-supply line. This biasing
arrangement is shown in Fig. 17.
TYPE
2NS470

POWER INPUT-mW

Fig. J 8 - Power gain as a function of power input in a
J-GHz common-base amplifier configuration.

14
FREQUENCY- 2 GHz
COLLECTOR-SUPPLY VOLTAGE

TAPE

V

CLASS B__I__
IRE~IOO 07MSl

.~

10

\
I~~~

\

•

\

6

,

~\"
I~· ~~

\'\

1\

2

QOI

CAPACITOR

~15

2

,

r---.

CLASS C
IRE"O}

\

I~

... , ... , ... ,I"-LI... , ."
0.1

I
10
POWER INPUT-MILLIWATTS

100

1000

RFe

;r;

fig. 19 - Power gain as a function of power input in a

2-GHz common-base amplifier configuration.
RF

LOW-

FREQENCYT
BYPASS

m

~ss
RF
BYPASS

Fig. 17 - A bias circuit with the transistor base grounded.

* Trademark of E.I.

du Pont de Nemours and Coo. Inc.

The collector-current values shown for class B operation represent quiescent current levels set for each test
prior to the application of rf power. The true collector
current for each test level is somewhat higher, the
amount depending upon the level of the applied rf
power. The circuit was returned for each test point to
provide maximum power output and, therefore, maximum power gain.
Class A performance was measured with collector

409

AN-3764

currents from 10 to 50 milliamperes. At these levels,
class A gains exceeding the values shown can be readily
obtained.
At 1 GHz with a supply voltage of 15 volts, the
maximum class C power gain for a 2N5470 transistor is
about 9 dB; maximum gain occurs with an input drive
of about 75 milliwatts applied to the device. At 2 GHz
with a 15-volt supply, the maximum class C power
gain is about 5 dB with about 90 milliwatts of input
power.
The selection of class B or class C operation and
the appropriate operating conditions for a circuit in
which power gain is important can be made for frequencies of 1 or 2 GHz with the help of the curves in
Figs. 18 and 19. Class B gains in excess of 10 dB can
be obtained at either frequency; however, the stability
of the amplifier must also be considered.

c,

1- and 2-GHz Lumped-Canstant Camman-Base
Amplifiers

Lumped-constant common-base amplifiers using the
2N5470 have been designed for 1- and 2-GHz operation; circuit diagrams are shown in Figs. 20 and 21,
respectively. Both amplifiers are designed for operation
either with two power supplies or with one supply with
neither positive nor negative line grounded. Both
amplifiers are tuned by means of emitter terminal
inductances and Johanson air-type dielectric tuuing
capacitors. These components step the impedance down
from 50 ohms to that required by the transistor. The
tuning range of the capacitors is sufficient to permit
tuning .for maximum gain or minimum noise.
A pi network is used in the output circuit of each
amplifier so that the output impedance can be varied
and thus the degree of mismatch controlled. With the
line lengths shown, the circuits can be tuned to the
desired frequencies with a large mismatch and provide
stable class A operation. In class B or class C operation, when either a slight mismatch or matched conditions are needed, a reduction in the series inductance
changes the transformed output impedance to a value
closer to that required for matched conditions.

410

Cs C6;~i~~4 pF. air dielectric trimmer capocil~r, Johanson 3901 or

C2-0.35-3.5 pF, Johanson 4701 or equiv.
C3 C4- 1000 pF. feedthrough
LJ -lO-mii capper wire, 0.4 em wide, 2.2 em long, formed into open
loop
RF chokes - 0.1 ",H, Nytronics or equiv,

Fig. 20 - A J -GHz lumped-constant common-base
amplifier.

C, C2 Cs C6 -0.35-3.5 pFJ Johanson 4701 or equiv,

CJ

Gi-l000 pF, feedthrough
L, -lO-mii COpper strip, 0.3 em wide, 1.3 em long

Fig. 21 - A 2-GHz lumped-constant common-base
amplifier.

AN-4025

OUcn5LJD
Solid State

RF Power Transistors
Application Note
AN-4025

Division

The Use of Coaxial-Package Transistors
In Microstripline Circuits
by
H. C. Lee and G. Hodowanec
It is generally accepted that a well-designed coaxial
transistor package (such as that used for the 2N5470l
outperforms other transistor packages (including stripline packages) at the microwave frequencies. This
performance is based on the low values of the parasitic
elements and the excellent isolation between the input
and output circuits associated with the coaxial configuration. As a result, micros trip or stripline amplifier
circuits using the 2N5470 coaxial-package transistor
can have thermal and electrical performance equal to
that of coaxial-line circuits.
This Note describes the design, construction, and
performance of microstripline circuits using 2N5470
coaxial transistors. Two complete circuits are described:
a 1.5-GHz amplifier which can provide 1.5 watts of output power with 8.O-dB power gain and 5(}.per-128
(8)

Fig. 6 - Cross-sectional view of the RCA 2N5470 transistor (output section).

=0.232+ j1.18
The Z'C L point is then located on the Smith Chart
shown in Fig.5. The chart is then rotated about the
constant VSWR circle toward the load to the point of
:.intersection with the 1.78 constant-resistance circle
(the normalized 50-ohm load resistance). This value,
designatedq ',is 1.78· - j3.6. The actual load impedance
therefore, is equal to
Z2 = Z2'· Z02 =28 (1.78 - j3.6)

(9)

tapered-line section and a very short uniform line section
.P. u' The tapered-line section is surrounded by an air
space which is enclosed by the A120:3 ceramic ins ulator
of the 2N5470 package and the boron nitride sleeve~
The section designated u extends directly to the boron
nitride sleeve. For the dimensions shown in Fig.6, a
characteristic impedance in the order of 28 ohJlts requires
that .the outer conductor of the line section"f u have an

J.

= 50 - j100 ohms
The line length required to transform the 5Q-ohm load to
the required collector load impedance ZCL of 6.5 + j33
ohms is determined from Fig.5 to he 0.352~. The
width of the microstripline for 28-0hms characteristic
impedance on a 1/32 -inch teflon fiherglass board is

414

*

An average characteristic impedance and electrical
length can he calculated for this tapered-line section,
or this section can he·considered as contributing a small
inductive component which can he calculated from its
physical dimensions.

AN·4025
inside diameter of the order of 0.36 inch.1 This coaxinl- I output-circuit section. When operated at 28 volts, this
line section transforms the normalized load impedance circuit can deliver cw power output of 1.2 watts with a
Z'CL to the point Z'co as shown on the Smith Chart of gain of 6 dB and a collector efficiency of 43 per cent.
The 3-dB bandwidth is 12 per cent. The performance
Fig.5. This transformation length must also be considered in designing the output network. The length of of this microstripline amplifier is equivalent to that of
microstripline needed to continue the transformation be- a cavity or coaxial-line amplifier circuit.
tween points Z band Z2' of Fig.5, therefore, is 0.300 \0.
For the 1I32-inch teflon fiberglass board, the length
PERFORMANCE OF THE 1.5·GHz AMPLIFIER
0.300 \0 corresponds to 1.10 inches.
The same lI"ocedure was used to design the 1.5-GHz
Fig.7 shows' the complete schematic for the 2-GHz amplifier circuit shown in Fig.9. The output circuit, as
amplifier. in practice, the calculated lengths of the
+28V
input and output microstriplines are reduced by 20 per
cent to account for the fringe-line effects resulting from
the length of piston-type capacitors C1 and ~, and the
inductance effects caused by the connecting leads of
the deVice to the stripline sections.
+28V

Fig.9 • Schematic of a 1.5·GHz microstripline transistor
amplifier.

Fig.7 • Schematic of a 2·GHz microstrip/ine transistor
amplifier:

PERFORMANCE OF THE 2·GHz AMPLIFIER

Tbe 2-GHz amplifier is constructed by use of the
layout shown in Fig. 1 and the confignration and dimensions shown in Fig.7. The metal block is aluminum.
The input and output circuits are constructed on 1/32-inch
teflon fiberglass board, which is mounted atop the aluminum so that the input and output lines are on opposite' sides
of the aluminum block. Fig.8 shows a photograph of the

shown in Fig.10, is constructed on 1I16-inch teflon
board which is mounted on one surface of an aluminum
block. The input line is constructed on the opposite
side of the aluminum block, which serves as the ground
plane of the line. The input line is formed by mounting
a 5-mil copper sheet over a 5-mil-thick dielectric material
(DuPont H-filml which is placed directly over the aluminum~block surface. The width of required input line can
be determined from Fig. 9. The required line impedance
must be increased about 6 per cent to allow for fringe-field
effects resulting from the use of a 5-mi:! line thickness.

.~~

!~......."t.·f

G·.··
(' .~:

''''''f

"

~

Fig.8 • Photograph of the output.circuit section of the
2·GHz amplifier shown in Fig.7.

Fig.l0 • Photograph of the output.circuit section of the
amplifier shown in Fig.9.

This amplifier circuit, which operates at 28 volts
and uses a typical 2N5470 transistor, provides 1.5 watts
of output power with 8.Q-dB gain and 5Q-per-cent collector efficiency. The 3-dB bandwidth of this amplifier
in in the order of 10 per cent.

415

AN·4025
CONCLUSION

The performance of the two, amplifier circuits described in this Note clearly demonstrates the advantages
offered by coaxial-packaged transistors in micros trip or
stripline circuits. The coaxial package provides thermal
and electrical performance equal to that of coaxial-line
circuits. In addition, the mounting arrangement of coaxialpackage transistors results in a built-in heat sink for
the device and improved isolation between inputs and

416

outputs. Similar techniques have been used successfully
to obtain 6 watts of cw output power at 2.0 GHz by use

of a coaxial-package higher-power transistor, RCA2N592J.
'
REFERENCE

1. Referenc,e Dats for Radio En gineers. International
Telephone and Telegraph Corp., New York, N;Y.
March 1957.
'

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-4421

rn10BLlD
Solid State

RF Power Transistors
Application Note

Division

AN-4421

16- and 25-Watt Broadband
Power Amplifiers Using RCA- 2N5918,
2N5919,and 2N610,5 UHF/Microwave
Power Transistors
by C. Leuthauser and B. Maximow

The advent of uhf power transistors has made possible
broadband amplification of large rf signals without use of
ganged tuned circuits, which have very limited bandwidths
and mechanical complexity. Wide bandwidths are now
attainable as a result of improved intrinsic transistor
characteristics, as well as package design. In a
225-t0400-MHz broadband high-power amplifier, good
transistor package design is of special importance. Low
parasitic inductances are essential because the real part of the
transistor input impedance is inherently low.
The RCA-2N5918, 2N5919, and 2N6105, which feature
a stripline package, are examples of improved rf power
transistors designed specifically for use in high-power
broadband amplifiers in the 225-t0400-MHz. frequency
range. The development of rf transistor packages has
progressed from the early hermetic TO-60-style configuration through the stripline plastic package, to the
highly reliable, ceramic-to-metal, hermetic stripline package
used in these types. This Note discusses general design
considerations for broadband rf amplifiers, and describes the
design of a 2N5919 amplifier that provides a constant power
output of 16 watts with gain variation within I dB ever a
bandwidth of 225 to 400 MHz. The 2N5919 amplifier can be
connected in direct cascade with a 2NS918 driver amplifier,
or two 2N5919 amplifiers can be connected in parallel, to
provide a constant power output of 25 watts from 225 to
400 MHz. A single TA7706 can be used in a similar
configuration to provide 25 to 30 watts of rf power across
the same frequency band.
The schematic diagram for the 2N5919 amplifier is
shown in Fig. I, and broadband performance of the 2NS919
in the circuit is shown in Fig. 2. Performance is shown for
class C operation, which is basic for high-power
amplification. In the case of an amplitude-modulated system,
linearity requirements are met by either envelope correction
or slight forward-biasing, or both.

10-70

GENERAL DESIGN CONSIDERATIONS

Broadbanding a transistor rf amplifier is difficult
because changes in output loading affect the input
impedance and may cause errors in the input-network design
if the design is based on narrowband input-impedance
information. The design of a broadband amplifier, therefore,
should begin with the output network.
Evaluation Circuit

A quick method of evaluating the design of an output
network is to construct an amplifier which uses the particular
output circuit and a tunable narrowband input circuit. Over
the required frequency band, the resulting amplifier should
display smooth gain and collector-efficiency characteristics.
Sharp changes in either of these characteristics indicate
improper loading of the collector and can result in higher
thermal resistance than would normally be anticipated.
Under improper loading conditions, the transistor dissipation
is not spread uniformly across the device pellet; as a result
there is heat concentration and an equivalent increase in
thermal resistance.
The interim circuit described above can also be used to

d"etermine the broadband input impedance of the rf
transistor by measuring the input-circuit impedance at the
device terminals at each frequency of interest. In each case,
the input network should present a good 50-ohm match to
the generator during tuneup and should be terminated
(source side) by 50 ohms when the impedance measurement
is made. The device impedance is then the conjugate of the
circuit impedance.
Package Design
If the upper frequency of operation is in the uhf range,
the imaginary part of the input impedance usually appears
indllctive. For good broadband performance, package

417

AN-4421

"4
L,O

1

2N5919

Vee

c,

·10 pF silver mica

L, ·,.1/2 turn ..

C2 . OB·10 pF. Johanson 3957*
C3 · 2.2 pF. Quality Components type 10%

L 2 . Copper strip 51B in. (15.875 mm) L; 5/32 in. (3.96 mm) W
L3 - Transistor base.lead, 3/6 in. (4.74 mm) L
"gimmick"· L4 , La . 3 turns"

ac. "gimmick"·

C4 · 1.0 pF. Quality Components type 10% ac,

s . 1.5 pF. Quality Components type 10% ac, "gimmick"·

C

LS' 2 turnS4

C6 , 36 pF. ATe·l00·
C7 ·51 pF, ATe·lOO·

L7 .lg.lg -O.1BpH RFC, Nytronics. P.#DO-O.1B
L,O -0.1 pH RFC, Nvtronics. P.#DD~.10
R, ·100 n. 1 W,carbon
R2 , Ra' 100 n, 1/2 W. carbon

CO' 47 pF. ATe·100·
Cg . 68 pF. ATe·1oa·
C,O·12PF,silvermica

e" .

R4,5.1 n.1I2,W,carbon

0.8·20 pF, Johanson 4802·
e'2 ·1000 pF feedthrough type, Allen-Bradley FASC·
e'3 -1 pF electrolytic
• Or equivalent
Allen-Bradley Co., Milwaukee, Wis.
American Technical Ceramics, Huntington Station, N. Y. 11746
Johanson Mfg. Corp., Boonton, N. J. 07005
Nytronia. Inc .• Berkeley Heights, N."J.
A.AII coils are 5132 in. 13.96 mmll. D. =18 wire, 12 turns per inch.

Fig. 1- 16-watt broadband amplifier circuit using the
2N5919.

parasitics must be low enough to allow the series input
inductance to be used by the first section of the input
matching network. If the inductance is lower than the input
network requires, additional inductance (a little extra lead)
can be added; however, excess inductance cannot be
removed.
The 2N5919 package is designed to prOvide reliable
hermetic-package performance with parasitics low enough for
suitable broadband performance. In comparison with earlier
metal and plastic packages housing the same pellet, the input
inductance has been reduced by a factor of four and the gain
increased by 1.5 dB. The present package consists of
alternate layers of ceramic and metal in a hermetic sandwich
structure. Prior to assembly, all electrical parts are
silverplated. The heat-sinking stud is brazed to the
bottom-layer ceramic (beryllium oxide), which serves to
isolate the pellet ( collector) from the stud and yet provide
good heat transfer. The emitter lead is then sandwiched by
another ceramic piece that serves as an insulator and support
for the base and collector leads. Electrical connection for the
collector is made with a pin through a small hole in the top
ceramic; this hole is sealed by the collector lead itself. A
larger hole in both the top ceramic and the base lead serves

418

for electrical and physical access to the transistor pellet. A
solid silver cap covers the hole in the base lead and provides
the final seal.
Gain and VSWR Control
Various approaches may be used to achieve low input
VSWR and power-gain flatness in a broadband amplifier.
Roll-off of transistor gain can be compensated for by
designing a given amount of mismatch into the input
network. However, this technique also increases the input
VSWR at the low end of the band and results in stressing of
the lower-level driving stages. An alternate method is to
employ a gain-leveling loop around the entire amplifier chain
to compensate for the low-end turnover, and to design each
stage for minimum input VSWR. The gain-leveling loop may
also be used for envelope correction when low-distortion
amplitude modulation is required.
Lossy input-network design can also be used to provide
gain and VSWR contro\. In this case, dissipative loss is
introduced in the input network at lower frequencies of
operation by selective RLC networks. This method should be
reserved for the input circuits, and preferably for lower-level
stages, to avoid excessive heat generation.

AN-4421
10

""-- ~

~

I
I---

modulation followed by linear amplification is generally
preferred to high-level collector modulation because (I)
collector modulation can result in circuit instability as a
result of varying collector supply voltage, and (2) low-level
modulation does not require a high-power modulator and
can, therefore, result in a size and weight reduction. Linear
amplification for AM signals is effiCiently accomplished by
class AB operation, in which the transistor emitter-base
junction is slightly forward-biased during a zero-signal
(quiescent) condition. In some cases, the forward bias is
sufficient to cause a quiescent collector-current flow. The
bias must be allowed to degenerate under peak drive
conditions to allow efficient operation and to avoid device
destruction. Bias degeneration can be provided by use of dc
emitter or base resistance; it must be temperaturecompensated to match the device transconductance changes
with temperature.

WITHOUT RLe CIRCUITS

"- r--

I
VSWR

I
225

250

275

300

325

FREQUENCY -

350

375

400

MHz

I

0

'"I

.~

~

B

",,7

z

~

GAIN

F--

-- -..

WITH RLe CIRCUITS

4

I

3:1 ~
2:1 >

VSWR

...

j:1~
225

250

275

300

325

350

375

400

FREQUENCY- MHz

Fig. 2 - Typical performance of circuit of Fig. 1 from 225 to
400 MHz.

Hybrid Combiners
Four-port hybrid combiners have been the most
successful approach to higher-power broadband structures.
Combination of power at the 50-ohm level is more easily
accomplished than direct paralleling of transistors and design
of matching networks to accommodate a lower impedance.
Hybrid combining also provides isolation between the
paralleled amplifiers and avoids destruction of adjacent
transistors in the event of a single transistor failure.
Two forms of hybrid junctions can be used to provide
various phasing between the paralleled amplifiers. The
"Magic T" combiner, when connected for zero-degree
phasing, sums (or splits) the powers of the two side ports.
The fourth port is terminated to dissipate any power
unbalance. The Magic T can also be connected so that the
two side ports are 180 degrees out of phase. A pair of
amplifiers paralleled in this mode operates in push-pull, and
all even harmonics are dissipated in the fourth port.
A quadrature combiner sums or splits signals 90 degrees
out of pliase. When used at the input and output of two
parallel amplil1ers, this hybrid junction delivers the input
reflected power of each amplifier to the fourth port of the
input combiner. The input to the amplifier pair then appears
matched and presents no problem to the driving amplifier.
Because of this characteristic, quadrature hybrid junctions
are the most widely used combiners in the 225-t0400-MHz
band.
Amplitude Modulation
A majority of amplifiers used in the 225-t0400-MHz
.band must· handle amplitude modulation. Low-level

CIRCUIT DESIGN

Output Circuit
The design of the output circuit of a broadband rf
power transistor amplifier depends on two basic premises:
(I) that the real part of the collector load is of constant
(frequency-independent) magnitude, determined by the
collector voltage and the output power, and (2) that the
output capacitance is also of constant (frequencyindependent) magnitude, determined by the collector-to-base
capacitance Cobo. These premises have theoretical foundation and have been verified experimentally at least to the
first-order approximation. The collector load resistance for a
particular transistor and its large-signal parallel equivalent
output capacitance are usually specified in published data. If
these values are not available, the following well known
approximations can be used for the output-network design:
[VCC _ VCE (sat)1 2
RL=~--------~-

2Po
where RL is the parallel equivalent of the real part of the
collector load, VCC is the supply voltage, VCE (sat) is the
high-frequency collector-to-emitter ·saturation voltage, and
Po is the expected output power. The value of VCE (sat)
usually is not known, but a value of 3 volts is a good
approximation for the power level of the 2N5919. The
large-signal parallel equivalent output capacitance Co is given
by Co = K Cobo' where Cobo is the collector-to-base
capacitance and the constant K is between I and 1.5 for class
C operation.
The design of the output circuit then reduces to the
matching of two resistances over a given frequency band: the
real load presented to the collector, which is usually the
smaller of the two resistances for an rf power-transistor
amplifier, and the 50-ohm load. The chOice of circuit
configuration to be used for this purpose is somewhat
restricted by the presence of a capacitance across the smaller
resistance. Fig. 3 shows a circuit which transforms a smaller

419

AN-4421

r
rt
-u

"I

*C1

I
I
I
I
I

I

I

LI

I
I

I
I

~C.

I

lI
I
I

CI

".

I

(bl

(al

Fig. 3 - Broadband transformation circuit.
resistance RI into a larger resistance .R2 over almost an
octave. Allhough the transformation is not complete with
large bandwidths, the circuit can be designed to favor the
higher frequencies of the band. The small degree of mismatch
at lower frequencies can be compensated by the higher gain
of the transistor.
It is often advantageous to consider a network problem
qualitatively, even with an oversimplification at first, so that
the physical phenomena· can be perceived before they
become obscured by the formulas, tabulations, and graphs
which may be required in exact numerical analysis. This
approach can also provide a starting point for an exact
solution, indicate the type of circuit, and yield approximate
magnitudes and the range of component values to be used.
As an example, the following paragraphs discuss the design of
the output circuit of the 16-watt broadband amplifier shown
in Fig. I.
Perhaps the simplest way to explain the operation of
the output circuit is to consider an L-section such as that
shown in Fig. 4. For transformation of RI into R2, the
magnitudes of the reactances XL and Xc are determined
solely by RI and R2, regardless of frequency, as follows:
XL= (RI R2_RI2)1/2

Xc= R2/~1/2
\R2-Rt!
If it is desired to transform RI into R2 over a band of
frequenCies, therefore, XL and Xc should be kept constant
over the band. Although this conclusion is an apparent
contradiction of the fact that XL = WL and Xc = IfWC are
frequency-dependent parameters, the circuits of Figs. 5 and 6
provide the steps for an approximate solution to the
problem.

OJ
Fig. 4 - L-section.

420

(el

(dl

Fig. 5 - Frequency effect on the parallel·to-series transfor·
mation: (a) physical circuit, (b) series equivalent circuit
below resonance, (c) series equivalent circuit at resonance,
(d) series equivalent circuit above resonance.
In the circuit of Fig. 5 (a), if CI and Ll are selected to
resonate within the band, the effective value of the series
inductance is increased below resonance, as shown in Fig. 5
(b); it remains equal to L2 at resonance, as shown in Fig. 5
(c), and is decreased above resonance, as shown in Fig. 5 (d).
Because of the presence. of C 1 and L I, RI is transformed
into lower series equivalent values (RI', RI", RI m, and so
on) which are different at each frequency. At resonance, RI
retains its original value in the series equivalent circuit.
Although the exact conditions of Fig. 4 are not met, the
general trend in the variation of the equivaIent series
reactance is in a favorable direction, i.e., toward greater
effective inductance at the lower end of the band and smaller
effective inductance at the upper end of the band.
A shunt capacitance can also be made to vary by use of
a series resonant circuit, as shown in Fig. 6. C3 and L3 in the
circuit of Fig. 6 (a) are selected to resonate at the high end of
the band and have no effect at that point, as shown in Fig. 6
(b). Below resonance, C3 and L3 provide a· net· paraIlel
equivalent capacitance Cp ' as shown in Fig. 6 (c), which adds
to C2 of Fig. 3. As the frequency is decreased, Cp assumes
greater effective values.

11""~ E
(al

(b)

(e)

Fig. 6 - Frequency effect on the series-to-parallel transformation: (a) physical circuit, (b) parallel equivalent circuit at
resonance, (c) parallel equivalent circuit below resonance.

AN-4421
The circuits of Figs. 5 and 6 can be combined to form
the circuit shown in Fig. 3. The component values are
selected in the following manner:
Rl is the real part of the collector load.
C I is the shunt output capacitance of the transistor.
L1 is selected to'resonate with C 1 around mid-band.
L2 and C2 are selected to make the L-section
transformation at the frequency where the best
matching is desirable, i.e., 400 MHz.
L3 and C3. are selected to resonate at the highest
frequency and to provide the maximum equivalent
parallel capacitance at the lowest frequency.
When· 'the .component values have been selected, the
L-section transformation can' be computed at any frequency
for the part oHhe circuit of Fig. 3 which is to the left of the
a-b line. The resultant L-section is shown in Fig. 7. Table I
lists the results of computer solution for component values at
25-MHz intervals. Rp is the value of parallel resistance into
which the collector load is transformed by the resultant
L-section for given values of C 1, LI, and L2. The capacitance
Cp is the value of capacitance necessary to make the
transformation complete.
The extent to which the part of the circuit to the right
of the c - d line in Fig. 3 is effective in providing a variable
capacitor is shown in Table II. Values for equivalent parallel
resistances and capacitance are computed at 25-MHz
intervals. Comparison of the results in Tables I and II is
helpful in determining the component values for the circuit
of Fig. 3.

Fig. 7 - Resultant L-section for left part of Fig. 3.

TABLE I - Transformed Component Values for L-Section
shown in Fig. 7. (For R1 = 20!1, C1 = 16 pF, L1 = 13 nH,
L2 = 11 nH in Fig. 31
Xs-!1

XT-Q

a

Rp-!1

Cp-pF

325

14.24
16.30
17.06
19.13
19.80

9.06
7.77
6.06
4.08
1.98

350

20.00

.(I.OS

19.80
19.29

-2.00
-3.71

1.73
'.54
1.40
1.30
1.23
1.21
1.21
1.24

56.76
54.80
52.95
51.30
49.97
49.06

375

24.61
25.05
25.07
24.81
24.44
24.11
23.92
23.94

21.53
17.86
15.26
13.41
12.10
11.17
10.53
10.08

F-MHz Rs-!1
225
250
275
300

400

48.69

49.00

TABLE II - Transformed Component Values for Circuit
shown in Fig. 6(cl (For R2 =5D!1, L3 =13 nH, C3 =12 pF
in Fig. 3)
F·MHz
225
250
275
JOO
325
350
375
400

Rp-Q

Cp-pF

82.91521
71.29604
63.27814
57.76598
54.06837
51.73186
50.44882
50.00470

6.95
5.85
4.75
3.62
2.58
1.63
0.80
0.08

Table III gives the transformed admittance/impedance
values for the entire circuit of Fig. 3 to the right of the e - f
line. These values represent the collector load applied to the
transistor over the 225-t0400-MHz band and are given as
parallel and series equivalent values.
Circuit Impedances
Knowledge of the input and output impedances of a
transistor is an invaluable aid in designing rf amplifiers and is
essential when broadband operation is required. However,
transistors operating in class C or class B at high frequencies
are not readily adaptable to equivalent-circuit analysis in
which input, output, and transfer parameters are specified.
Fortunately, this problem can be resolved by specifying the
circuit impedances of the input and the output networks of
an amplifier. These impedances are measured at the transistor
terminals after the amplifier has been optimized, the
transistor removed, and the circuit terminated with 50 ohms,
Because transistor input impedance depends to some extent
upon the output circuit, some variation of impedances
obtained in this manner should be expected in different
circuit configurations.
The Input Circuit
The input impedance of the 2N5919 transistor varies
from 2.5 + jO ohms at 225 MHz to 1.5 + 1.7 ohms at 400
MHz. In matching this varying impedance to a 50-ohm
source, certain assumptions and approximations facilitate the
problem by using already developed techniques. One such
technique is the "Tables of Chebyshev ImpedanceTransforming Networks of Low-Pass Filter Form" compiled
by George L. Matthaei. l These tables permit selection of
values for the fIlter elements to obtain a given performance.
The tables assume constant impedances across the band.
Although the input impedance of an rf power transistor
varies with frequency (especially its reactance), the tables provide a good starting point. The foIl owing discussion is based
on the Matthaei Tables.
For this discussion, R; represents a real part of the
transistor input impedance and Rs a resistive source
impedance of 50 ohms. It is assumed that Ri has a value of
1.65 ohms and is constant across the band of interest. The
value of 1.65 ohms is selected because it falls between 1.5

421

AN-4421
TABLE III - Transformed Admittance/Impedance Values
for Circuit shown in Fig_ 3_ (For R2 = 50n, C3 = 12 pF,
C2 = 10 pF, L1 = 13 nH, L2 = 11 nH, L3 = 13 nH in
Fig_ 3_1
F-MHz
225
250
275
300

325
350
375
400

G-mhos B-mhos Rp-!1

xp-n

Rs-!1

xs-n

.(,.02

40.48
47.85
47.54
41.42
34.94
30.28
27.29
25.41

20.08
20.63
18.44
16.26
14.66
13.58
12.84
12.31

17.66
11.81
8.77
7.88
7.97
8.44
9.02
9.59

0.03
0.04
0.04
0.05
0.05
0.05
0.05
0.05

-0.02
·0.02
-0.02
-0.03
-0.03
-0.04
·0.04

35.62
27.39
22.61
20.08
19.00
18.82
19.17
19.78

and 2.5 ohms, the real parts of the transistor input
impedance at 400 MHz and 225 MHz, and yields an
impedance transformation ratio of 30, for which the values
for the filter elements can be taken directly from the tables
without the need of interpolation.
The parameters to be used are the transformation ratio
r; the fractional bandwidth w, and the number of filter
elements n. The bandwidth w is defined as follows:

where fa is the low-frequency cutoff, fb is the high-frequency
cutoff, and fm is the midband frequency.
Table IV gives values for the filter elements as
computed from the Matthaei Tables for values of w =0.8, n
= 8, and r = 30, where L's and C's are as defined in Fig. 8.
The value of 0.8 was selected for the fractional bandwidth
rather than a smaller value to permit computation of
filter-element values for midband frequencies of both 310
MHz and 400 MHz. It is often useful to try other values for

n.
Several observations can be made from Table IV. First,
the value of L1 is so low that C 1 must be placed as close as
possible to the transistor base so that the inductive part of
the transistor input impedance at 400 MHz is part of Ll.

TABLE IV - Values for Filter Elements of Input Circuit
as Computed from Matthaei Tables1 (L's and C's are
defined in Fig. 8)
1m

Ll
Cl
L2
C2
L3
C3
L4
C4

422

310
1.07
200
3.2
98.4
8.1
39
16.6
13

400

MHz

0.4
157
2.48
77
6.27
30
12.8
10.3

nH

pF
nH

pF
nH

pF
nH

pF

EJTtTJ

Fig. 8 - Definition of filter elements for values given in
Table IV.

Second, the values of C 1 and C2 are so high that hardly any
inductance can be tolerated in series with these capacitors.
Third, L2 and L3 are very small and appear to be critical.
Physical dimensions of commercially available components
make it difficult to separate two capacitors with an inductor
of 3.2 or 2.5 oanohenries. Therefore, some experimentation
may be required before acceptable performance can be
obtained. For example, a copper strip 0.14 inch wide and 0.4
inch long has an inductance of about 5 nanohenries. When
lower values of inductance are needed, the length of the strip
becomes about the same as the width. This fact, coupled
with the physical size of the capacitors, makes experimentation unavoidable.
Plotting the values of Table IV on a Smith Chart shows
the impedance variations along the fdter from Rm to Rg. Fig.
9 shows such a plot for three frequencies: 225 MHz, 310
MHz, and 400 MHz. This chart can be used to study the
effect of each element in the filter on the over-all matching.
For example, reducing L4 improves matching at 400 MHz
and 225 MHz, but has an opposite effect io matching at 310
MHz. The component values in the practical circuit shown in
Fig. 1 were selected to be closer to those computed for 400
MHz in Table IV because it was desired to optimize the gain'
at that frequency.
Reducing VSWR
The amplifier designed by use of the procedure
described has much higher gain at 225 MHz than at 400
MHz. For full utilization of the transistor gain capabilities at
400 MHz, the amplifier is adjusted for the best match at 400
MHz. Inevitably some VSWR appears at other frequenCies.
Ideally, the circuit is designed for the highest VSWR at the
frequency where maximum gain occurs (Le., 225 MHz). The
forward power, as well as the reflected power, is then
attenuated by introducing a resistive element in shunt with a
node in the input network. The greater the ratio of the
forward power to the reflected power, the smaller the
VSWR. The attenuator is made frequency-selective, i.e., it is
a series RLC circuit. These RLC networks can be staggered in
frequency. By selection of R's and L's, the amount of
attenuation and Q's can be controlled. However, a series LC
circuit appears to be capacitive below resonance and may
limit "the maximum size of a capacitor. For this reason, shunt
RLC circuits which resonate at frequencies higher than 225
MHz are placed at the second node where the shunt capacitor
is larger.

AN-4421

~
.;
•

READ

~

X

ROTATE

.

PL.OT

REAO

Pl.OT or READ

WPLOT

~l:

-X,.B

PLOT or READ

4--J--.....

X.. B

~

\
'ROTATE

- - - - 4 0 0 MHz
----3OOMH•
••••• •• ··225 MHz

Fig. 9 - Smith chart showing impedance variations along
filter from Rin to Rs

423

AN-4421
CIRCUIT PERFORMANCE

The basic amplifier developed by use of the technique
described is a 16-watt, one-stage, 225-to-400-MHz broadband
amplifier using the 2N5919 transistor. This circuit requires a
driving power of 3 to 4 watts, which would normally be
supplied by a cascaded chain of transistors. The performance
of two amplifiers in cascade is also described to demonstrate
this technique. When the required power exceeds the
capability of the largest transistor in the chain, paralleling
can be used to develop larger outputs.
16-Watt Amplifier
Fig. I shows the schematic diagram of the 2N5919
amplifier, which can be considered the main "building
block" of the chain. Typical amplifier performance is shown
in Fig. 2. For a constant power output of 16 watts, response
is fairly flat; the gain variation is within 1 dB across the band.
Maximum input VSWR is 2: 1. Such flatness of response and
low input VSWR were obtained by designing for the best
possible match across the band and then dissipating some of
the power at the iow end of the band through dissipative
RLC networks. The effectiveness of this technique can be
evaluated by comparison of the gain and input VSWR curves
in Fig. 2 (a) with those in Fig. 2 (b). The flatter the response,
the smaller the dynamic range required in the output leveling
system. Low input VSWR is necessary for protection of the

driVing stage in a cascade connection. The collector
efficiency is not constant, but has a minimum value of about
63 per cent. The second harmonic of the 225-MHz signal is
12 dB down and that of the 400-MHz signal is 30 dB down
from the fundamental. Further reduction of the second
harmonic of the 225-MHz signal is difficult to obtain because
the amplifier bandwidth covers almost an octave.
Cascade and Parallel Connections
In a cascade arrangement, a lower-power transistor ~ the
2N5918, is used to drive the 2N5919. The output circuit for
the driver is modified to accommodate a higher colIector
load. The input circuit remains essentially the same as for the
2N5919. The 2N5918 amplifier schematic is shown in Fig.
10, and the performance of the two amplifiers connected in
cascade is shown in Fig. II. When the two stages are
connected together, the broadband characteristics of the
amplifiers minimize the number of adjustments required.
A parallel combination of two 2N5919 transistors can
be achieved by use of two quadrature couplers, as shown in
Fig. 12 (a). Fig. 12 (b) shows gain and efficiency curves for
such a combination for a constant power output of 25 watts.
The input VSWR curve is omitted because it is very small and
independent of the magnitude of the reflected power at each
amplifier input as a result of the properties of the 90-degree
combiners.

t;
~

70

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~ I

60

"""E'

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~

50

~

40

~c

8

R,

vec
L,-O.l2~HRFC.NYTRONICS.P.No.DD-O.l8.

C2 -Q8-IOpF, JOHANSON 3957..
C:s -5pF SILVER MICA
C4 -2-18 pF, AMPEREX HTIOMA/2'B*
Cs -24pF, SILVER MICA
Cs -5J pF. ATC-IOO_
C7-47pF,ATC-IOOII:
Cs -68pF,ATC-\OO*
Cg -I,.F, ELECTROLYTIC
C'O-IOOOpF. FEEDTHROUGH TYPE.
ALLEN-BRADLEY FASC*
CIZ-1.5-20 pF. AReo 402 ..
CII-D.9-7 pF, ARca 400_

L2-No.1B WIRE,o.64 IN,LONG
L3-COPPER STRIP 5 MILS THICK,ISO MilS
W.o 670 MilS L.
L4-TRANSISTOR BASE LEAD,o.I6 IN. LONG
L5 -QI"H RFC, NYTRONICS, P. No. 00-0.10La-No.IS WIRE, 1.08 IN. lONG
L 7-2 TURNS.5/32 IN. 1.0. No.IS WIRE,'2
TURNS PER IN.
RI -loon,I/Z W, CARBON
R2-5.111,114 W, CARBON

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...-r-->-. r------, ......

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~
'5

1/r'(
V
1\

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\,/

/VSWR

~

'<;c.....

I\.
225 250 275 300 325 350 375 400
FREQUENCY - MHz

• OR EQUIVALENT

Fig. 10 - Driver amplifier using the 2N5918.

424

Fig. 11 - Performance characteristics of amplifiers shown in
Figs. 1 and 10 connected in cascade.

AN-4421
2N5919

90'

90'

COUPLER

COUPLER
2N5919
OUTPUT

TA7706 25·Watt Amplifier
Fig. 13 shows the schematic diagram of a 25-watt,
225-to400·MHz broadband amplifier using a 30-watt,
400·MHz transistor, the RCA type 2N6105 Amplifier performance is shown in Fig. 14.

(0)

This amplifier includes some modifications in the
matching circuits which represent a somewhat different
design approach. For example, the input Chebyshev nIter
uses thr~e sections rather than four. As a result, there is a
poorer match at 225 MHz, with a resulting increase in the
input VSWR and a consequent loss of gain. Some loss of
amplifier gain can be tolerated at 225 MHz because of the
transistor gain reserve at that frequency. The increased input
VSWR is not a problem if the amplifier is used in
conjunction with quadrature couplers because low' input
VSWR is then not nearly as important as in a direct cascade
connection.

70

"c

V"'./'

5

-

/

"'!--,

./

60

/

50

40
GAIN

'\

225

300

,...---<

400

350

FREQUENCY - MHz
(0)

Fig. 12 - Performance of two 2N5919 transistors connected
in parallel by use of quadrature couplers.

The collector load resistance for the 2N6105 should be
about 10 ohms, half of that for the 2N 5919. Therefore it
appears that a 4: 1 transformer can be used in the output.
The circuit shown in Fig. 13 uses a twisted wire pair
connected as a 4: I autotransformer. The length of the
transformer is determined primarily by the amount of

R,

CI

T I - TWISTED PAIR OF No. 20 ENAMELED
wlRE,a TWISTS,I5 TWISTS PER
INCH, CROSS CONNECTED AND
FORMED IN A LOOP

- 2-18pF AMPEREX

C2 ,C 3 - 10 pF, SILVER MICA
C4

-

33 pF

C5

-

61.5 pF

ATC -100·

LI - I TURN No.20 WIRE, WOUND IN
9/64 IN. 10.

ATC -100·

L2 - INDUCTANCE OF BASE LEAD 5/16 IN LONG

C6

-

66 pF

C7

-

~OL02EP:_ :~;gL~~R~~~~.

ATC -100·

L3 - 0.12 fLH RFC

Ca

-

1000 pF

L4 -

C9

-

1- 20 pF JOHANSON 4a62·

ATC-IOO·

C IO -

12 pF, SILVER MICA

C II -

IfJ-F ELECTROLYTIC

RI

5.1.[1112 WATT

-

•

2 TURNS No.20 WIRE, WOUND IN 9/64 IN

DIA.

- OR EaUIVALENT
ALLEN - BRADLEY Co., MILWAUKEE, WIS
AMERICAN TECHNICAL CERAMICS, HUNTINGTON STATION, N.Y. 11746
JOHANSON MFG. CORP., BOONTON, N.J. 07005

Fig. 13 - 2N6105 broadband amplifier circuit.

425

AN-4421

---/'

7o

60~~
~;:

--

GpE

I""--..

v

5

"

225

POWER I POE)-25 W

VSWR

250

215

300

r--....
325

350

o~~
''''
~

i'--

COLLECTOR SUPPLY VOLTAGE (VCCI-28 V

Sf-- : - - OUTPUT

..
I

'c

-,

0:1

a:

~

References

~

1.

, i!:
375

400
"

FREQUENCY (f)-MHz

Fig. 14 - Performance of 2N6105 in the circuit of Fig. 13.

426

inductance required to tune. out the output capacitance at
400 MHz. Collector efficiency is somewhat poorer at the
22S-MHz end of the band as a result of incomplete tuning
out of the output capacitance at the lower frequencies.
Although twisted-wire transformers are rather difficult to
analyze, experiments have shown that they have large
bandwidths and can be successfully used in the output of
high-power broadband amplifiers.

G.L. Matthaei, "Tables of Chebyshev Impedance Transforming Neworks of Low-Pass Filter Form,"
Proceedings o[the IEEE, August 1964.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-4591

RF . Power Transistors
Application Note
AN-4591

OO(]5LJI]
Solid State
Division

Use of the RCA-2N6093 HF Power
Transistor in Linear Applications
by Z.F. Chang and J.F. Locke

The rapidly growing technology in semiconductor devices
has resulted in the development of power transistors designed
especially for use in hf single-sideband (SSB) equipment.
Unlike most commercially available rf power transistors,
which are designed primarily for class C operation, the
RCA-2N6093 provides a high degree of linearity for class
AB operation, emitter ballast resistance for stabilization
and low distortion, and an internally mounted temperaturesensing diode for bias compensation,
This Note discusses the advantages of single-sideband
operation, some basic transistor characteristics and trade-offs
involved in the choice of a transistor for linear applications,
broadband matching networks, and the basic performance
of the RCA-2N6093 in narrowband and broadband applications. The design features that make this device suitable for
linear amplification are described.
SINGLE SIDEBAND

Single-sideband communication systems have many
advantages over AM and FM.systems.l In applications where
reliability of transmission and power conservation are of
prime concern, SSB transmitters are usually employed.
Advantages of SSB include reduced power consumption for
effective transmission and reduced channel width, which
permits mor~ transmitters to be operated within a given
frequency range. Any discussion of SSB operation includes
the terms "intermodulation distortion" and "peak envelope
power"; these terms are defined below.
Intermodulation Distortion

For an amplifier to be linear, the output power must be
directly proportional to the input power at all signal
amplitudes. Alternatively, for a fixed load the amplifier must
maintain a constant gain within its useful power range. An
approximate check on the linearity of an rf power amplifier
is a curve of power output as a function of power input. The
curve in Fig. I(a) shows two regions that depart from linear
operation: region A, high-power operation with current

3-71

saturation; and region B, low-power operation with insufficient forward bias.
The PO-PIN graph requires measurement at several power
levels, which is cumbersome and time-consuming, and yields
results that are only approximate. For final equipment
testing, the most widely accepted test method requires the
use of a two-tone Signal. The two tones have equal amplitude
and are separated by an audio frequency. The output
waveforms can be displayed on a spectrum analyzer to show
the two tones and the intermodulation-distortion (IMO)
product. The ratio of the amplitude of the strongest
distortion product to the amplitude of one of the test signals
is called the IMD ratio. A distortion specification of -30 dB,
for example, means that the strongest distortion product will
be less than 0.1 per cent of a signal output level for any
two-tone signal at power levels up to the peak envelope
power rating of the amplifier. Fig. 1(b) is a typical curve of
IMD as a function of output power; the increased distortion
in regions A and B are readily noted.
The important intermodulation-distortion products are
those close to the desired output frequencies, because they
fall within the passband and cannot be filtered out by normal
tuned circuits. If f 1 and f2 are the two desired output signals,
third-order IMD products take the form (2f1 - f2) and (2f2 f1). The other third-order terms, (2f1 + f2) and (2f2 + fl),
correspond to frequencies near the third-harmonic output of
the amplifier and are greatly attenuated by tuned circuits. It
is important to note that only odd-order distortion products
appear near the fundamental frequenCies. The frequency
spectrum shown in Fig. 2 illustrates the frequency relationship of some distortiori products to the test signal.
Even-order distortion products do not occur near the
desired frequencies fl and f2; all are either in the
difference-frequency region or in the harmonic regions of the
original frequenCies. Therefore, filters following the nonlinear elements can effectively remove all products generated
by the even-order components of curvature, and the
second-order component that produces second harmonics
will produce no distortion in an SSB linear amplifier.

427

AN-4591

4
2N6093
f'"30MHz
Vee ·2BV

FUNDAMENTAL FREQUENCIES

/

THIRD-ORDER DISTORTION

Te· 25•C
CLASS C OPERATION
,1r1FTH-ORDER DISTORTION

•

0.1 L..-~~-'--±....L-:.~.;.u---:-...I.-+...I.-~.~.l.J
0.1
10

-I

f2:;.
I

INPUT POWER (P,E)-W

I

-~
I

_N S'
!:!:! !!

CO J

FREQUENCY
COLLECTOR SUPPLY VOLTAGE (VCC)-28 V
CASE TEMPERATURE (Tc).e:c
FREQUENCIES (f)-3D MHz. 30.001 MHz
COLLECTOR BIAS CURRENT-20 mA
SOURCE 'IMO--45 dB

.

~-

Fig. 2- Frequency spectrum of intermodulation·distortion
products.

•

~

half ofthe power in the cw wave. Because peak power occurs
when the two' tones are in phase, the peak-envelope-power
(PEP) rating of an amplifier is equal to twice the average
reading obtained from a power meter such as a calorimeter.
For a signal of three equal-amplitude tones, the PEP·toaverage-power ratio is 3 to 1.

z

Q -25

~

~
ti

~

-35

~ -40

!i

TRANSISTOR OPERATION

-45

o

"

2.OW40

506070

BO

OUTPUT pOWER (POE)-W (PEP)

CbJ

Fig. 1- Two ways to evaluate power amplifier linearity: (a)
output power as a function of input power; (b)
intermodulation distortion as a function of output
power.

Peak-Envelope-Power Rating
The maximum power that a device can deliver is usually
limited by its current and voltage ratings. When a cw signal is
used, the output is a constant, undistorted, sinusoidal
waveform that is not suitable for linearity testing. If a
two-tone signal is used in which the amplitude of each tone
equals one half of the cw amplitude, and if the two tones are
separated by a small frequimcy, the two tones add or
subtract depending on the phase relationship. When in phase,
the two tones add to yield an amplitude equal to the cw
amplitude. When out of phase, the two tones subtract; the
resultant amplitude b~comes zero. E!Seniially the resultant is
an undulating wave that varies from zero to maximum
amplitude at the rate of the difference frequency. Because
each tone of the two-tone signal has an amplitude equal to
one half of the cw amplitude, the power contained in one
tone is only one quarter of the power in the cw signal. The
total average power in a two-tone signal, therefore, is one

428

In a class B amplifier the transistor conducts half of the
time and the average collector current is directly propor·
tional to the ~mplitude of the signal voltage. This facl implies
that the circuit is linear for the fundamental components. A
class A amplifier conducts all of the time. It provides the
most linear amplification and is characterized by high gain,
low distortion, and low efficiency .. The low·level stages of a
power·amplifier chain commonly operate in class A. Because
of its high quiescent colleclor current, class A operalion is
seldom used for a power amplifier, parlicularly in porlable
equipmenl where high efficiency and light weighl are Ihe
design goals. Therefore, if the primary design goal is 10
achieve low IMD wilh Ihe highesl efficiency possible, the
Iransislor should be operaled al a power level low enough to
avoid the nonlinear saturation region, and a bias level beyond
Ihe nonlinear base-Io-emitter "Iurn-on" region. Fig. 3 shows
Ihe reduction in IMD wilh increase in bias. When the 2N6093
is operated al a PEP output level of SO walls, it can have an
IMD ofless than 40 dB.
For bias currents above 60 milliamperes, the reduction in
IMD becomes less significant. To avoid catastrophic transistor failures caused by forward-bias second breakdown, Ihe
bias currenl should not be set milch beyond the level
required to meet the power and distortion design objectives.
Furthermore, once the bias current has been eSlablished the
designer musl make sure that Ihe collector quiescent point is
'. within the safe de operating curve of the transistor.

AN-4591

.
I
'0 -20

10

OUTPUT POWER I POE'· 50 W (PEPI
CASE TEMPERATURE (Tel- 2S·C
FREQUENCIES (f)= 30 MHz, 30.001 MHz
COLLECTOR SUPPLY VOLTAGE (VCC'·28V
SOURCE IMD.- 45 dB
RCA-2N6093

" I".

•
•
4

"'-

'I.

~~
~~ t,
~

g

2

~

t;.A

~ -25

~'"

(,

r", ,,\

61-- TEMPERATURE

-35

4~

-40

2~

!~

".J.@.\'\

Bi- HOT-SPOT

o

Iii=

NOTE:
TJS IS DETERMINED BY USE

.
iE -45

...

o

o~

(TJ sl-200·C

OJ

ID

W
~
~
~
ro
ro
COLLECTOR BIAS CURRENT (lei-rnA

~

00

Fig. 3- Typical intermodulation-distortion as a function of
collector bias current for the RCA-2N6093.

TRANSISTOR SELECTION

To date, most high-frequency power transistors have
been designed for class C operation. Forward-biasing into
class B or class AB places such devices in a region where
second breakdown may occur. The susceptibility of a
transistor to second breakdown is frequency-dependent;
experimental results indicate that the higher the frequency
response of a transistor. the more severe its secondbreakdown limitations. Physically. second breakdown is a
local thermal-runaway effect induced by severe current
concentrations. Improving the safe dc operating region of a
transistor. therefore. must be the first step in providing a
rugged device suitable for SSB application.
The RCA-2N6093 is a power transistor designed specially
for use as a linear amplifier. This transistor can be
forward-biased into class AB and has a good high-frequency
response. Improvement of second breakdown is accomplished by subdividing the emitter and resistively ballasting
the individual sites. The transistor has an overlay2.3
structure. with the emitter sites interconnected by metal
fingers in parallel. Current-limiting resistors are placed in
series with each emitter site between the metallization and
emitter-to-base junction.
The maximum operating area of a forward-biased
2N6093 is illustrated in Fig. 4 for various case temperatures.
If the device is operated within the curves of Fig. 4 under dc
conditions. second breakdown will not occur and the
junction temperature will not exceed 2000 C at any point.
The hot-spot temperature for these curves were determined
by infrared scanning.
Emitter Ballast Resistance.

To show the effect of emitter ballast resistance on second
breakdown. three groups of high-VCEo(sus) overlay transistors were made with different ballast-resistor values. The
collector-to-emitter voltage needed to cause each transistor
to go into second breakdown at a collector current of one

VeEO

or

LIMITED

INFRARED SCANNING TECHNIQUES

I

2

I I •II

4

6

I

4

10

•

8 100

COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V

Fig. 4- Safe area for dc operation of the RCA-2N6093.

ampere. measured on a curve tracer with a single base step. is
shown in Table I. These data indicate that the addition of
resistors improves device second-breakdown capability. A
relatively large value of ballast resistance prevents second
breakdown. improves thermal stability. and provides linear
transfer characteristics. However. excessive ballasting can
seriously degrade the rf performance of the transistor. The
ballast resistors are in series with the load; therefore. in a
high-frequency power amplifier with low supply voltage. the
emitter resistance can be an appreciable portion of the
reflected load at the collector. and thereby limit the output
power. The power loss in the emitter resistance should be
taken into account when the resistance value is decided; a
compromise must be made. empirically to obtain sufficient
second-breakdown protection without seriously affecting rf
performance. The ballast resistance can be measured by use
of a Tektronix 576 curve tracer equipped with a Kelvin
probe.
Because the value of VBE at the transistor base-toemitter terminals includes the voltage drop across the ballast
resistance. the transistor transconductance is affected by the
value of ballast resistance. The curves of IC as a function of
VBE in Fig. 5 for three different values of resistance show
that ballast resistance improves the linearity of the device;
the resistance also reduces the input Q.
. The adverse effects of high ballast resistance are reduced
rf output .power and increased saturation voltage. Viewed
Table I - Effect of Emitter Resistance on Second-Breakdown
Voltage
Total Emitter Resistance
(ohms)

0.005

Second-Breakdown Voltage

(volts)
50

0.013

65

O.OB

108

429

AN-4591

1

In most linear applications where the operating point of
the device is biased with a voltage source, this IC-VBE curve
becomes an accurate means of predicting device stability. It
is difficult to maintain a stable quiescent point of a transistor
with low bend-back. Laboratory results indicate that a
minimum bend-back current of I ampere at 22 volts is
needed for a transistor to operate safely at 40-per-cent
effiCiency with approximately 50 watts of dissipation.
Bend-back occurs when the increase of VBE with
collector current is just balanced by the decrease in VBE
caused by junction-temperature rise. Therefore at bend back

1000

I

~

(I)
where
Fig. 5- Current-voltage characteristics at various ballast·
resistance levels.

KT/q =0.032 volt @ lOOOC

externally, the total saturation voltage includes the voltage
drop across the ballast resistance. This additional voltage
makes the "soft" output characteristics of a transistor at high
current even softer. As a result, it limits the available linear
region through which the signal can swing.
An attempt to make a transistor more linear by
increasing the forward bias causes the collector efficiency to
decrease and results in increased transistor dissipation.
Dissipation produces heat, which causes VBE to decrease at
the rate of about 0.002 volt per oC, and can cause thermal
runaway unless temperature compensation is used to
maintain collector current relatively constant over a wide
temperature range.
As discussed above, some transistors fail when the bias
current is increased for class AB operation. Investigations of
the failures revealed that these devices exhibited a maximum
VBE and then went into a negative-resistance region as
shown in Fig. 6. The onset of negative resistance, called
bend-back, results in a runaway condition that ultimately
destroys the transistor.

Bj-c =junction-to-case thermal resistance

Rt

=total ballast resistance

0.002V/oC = base-to-emitter junction
temperature coefficient
IE =emitter current
IC

=collector current

VCE = collector-to-emitter voltage
IfiC = IE, Eq (I) can be solved to find IE at bend-back:

(2)

Thermal runaway can be attributed to the fact that the
base-to-emitter junction of a transistor has a negative
temperature' coefficient. For example, the RCA-2N6093
transistor is forward-biased by 0.65 volts to produce a
quiescent collector current of about 20 milliamperes at VCC
= 28 volts. This operating point is shown as point A in Fig. 7.
When rf drive is applied, the collector current increases to 3
amperes. If the efficiency is 40 per cent, the power dissipated
in the transistor is given by
Pdiss.

=28 x 3 (1

- 0040)

= 50 watts.

VeE INCREASE
DUE TO

IE Rt AND KT/q

If the ambient temperature is 25 0 C, the case temperature
is 500 C, and the thermal resistance is 1.5 oc per watt, the
junction temperature is given by

Tj = Tease + Pdiss. Bj-c

= 50 + 50 x 1.5 = 1250 C.
BASE-TO-EMITTER VOl.TAGE (VaE )

Fig. 6- The bend-back phenomenon.

430

The junction temperature is thus loooC above ambient
temperature. At this junction temperature the VBE required
to maintain a collector current of 20 milliamperes is only

AN-4591
+ Vee

RFe

BASE-To-EMITTER VOLTAGE (VaE)-V

Fig. 7- Col/ector current as a function of base-to-emitter
voltage in the RCA-2N6093 for two values of

junction temperature.

0.65 - 100 x 0.002 = 0.45 volt, as shown at point B. If the
bias voltage is fixed at 0.65 volt, however, and the drive is
removed instantaneously, the quiescent current will no
longer be 20 milliamperes. Instead, the collector current will
move to point C, where the operating point falls outside of
the safe area of Fig. 4. Therefore catastrophic failure will
occur as a result of thermal runaway.
Compensating Diode
To provide a bias voltage that varies with temperature in
the same manner as VBE of the transistor, the 2N6093
incorporates a compensating diode as shown in Fig. 8. To
insure fast thermal response time, this diode is mounted on
the same beryllia disc as the transistor chip. The diode,
forward-biased through RBias, serves as a temperaturesensing element. The voltage developed across the diode is
amplified to provide a "stiff' bias-voltage source.
A bias-compensation circuit is included in the 30-MHz,
75-watt (PEP) amplifier shown in Fig. 9. The current
amplifier uses QI and Q2 in a differential-amplifier arrangement so that the output voltage is independent of
ambient-temperature variations. Q3 and Q4 provide the
necessary current amplification. TIle bias current in rf
transistor Q5 can be adjusted by varying Rl.
As shown in Fig. 10, with no rf signal the forward-biased
transistor is statically stable up to a case temperature of
1600 C. The dashed line in Fig. 10 shows that without
temperature compensation the transistor tends to thermal
runaway around 80 0 C. To further show the effectiveness of
compensation, the third-order distortion and output power
are plotted as a function of case temperature in Fig. 11. The
decrease in output power at high temperatures is caused by a
drop in high-frequency gain and an increase in rf saturation
voltage. The decrease in hfe produces a soft saturation knee
that causes the degradation of distortion.

Fig. 8- Block diagram of 30-MHz amplifier with tempera-

ture compensation.
BROADBAND CIRCUIT DESIGN
Transistor Parameters

Before any circuit can be designed, the transistor input
impedance and the collector load impedance over the
required frequency band and at the desired levels of output
power, IMD, case temperature, and collector supply voltage
must be known or measured. TIle circuit designer must also
know the transistor power gain over the same band. Curves
of these characteristics for the RCA-2N6093 are shown in
Figs. 12-14. A broadband transistor should be selected for
minimal impedance variation and low input Q across the
frequency band. A transistor with ft well above the highest
operating frequency, if available, can provide constant gain
under broadband operation; such a transistor eliminates the
need for additional gain-leveling circuitry. Because circuit
optimization becomes more difficult with high-power broadband operation, the need for thermal stability becomes more
acute and the necessity of diode compensation at high
output powers becomes greater. To provide this stability, the
tranSistor" should have an internally mounted compensating
diode.
The advantages which especially suit the 2N6093 for
broadbanding are its low input Q and its internally mounted
compensating diode. Its main disadvantage is a IS-dB gain
decrease from 2-30 MHz due to operation on a power-gain
slope of 6 dB per octave.
Transmission Line Transformers4,5,6
After selection of the transistor and measurement of its
broadband parameters, the next step is to select the circuit
approach. The most practical broadbanding method to
provide an effective impedance transformation over four
octaves (2-30 MHz) is a transmission-Iine-transformer/ferritecore combination. The major disadvantage of a transmission
line transformer is the limited number of impedance

431

AN-4591
Vee

son

2Kn

24t<,n
O.3,..F

50v

sion
ZIN ~ 50

-=-

1-1

60-480 pF

3
>-e---,II'--.......~""'''--I--.....--+-....,.:.''-:--=-I---l

n

55-300 pF
VCC~+28V
VEE~-6V

L, 3T No.14 WIRE 1/4 1.0. 1/2 LONG
LZ 3T No 10 WIRE 1/2 1.0.318 LONG
L3 31/2T No.IOWIRE 5/8 1.0.112 LONG

ALL RESISTORS 1/2 WATT

RF'C:' F'ERROXCUBE No.VK200-0J-38 OR EQUIVALENT

Fig. 9- Use of the RCA-2N6093 in a 30-MHz, 75-watt
(PEP) amplifier with temperature compensation.

«

,,,
,

1oo,--------,-----------,

E

1 90

"...

~80

~

70

.,
I

~

I

~

5'

I

... 30

ffi

I

~ 20

l'

-10 ~
H
Z

o

i=

70

-20 ~

60

-30

50

-40 ~

"J,

-

+'

~ ",::j

10

15

20

2S

30

35

FREQUENCY (f)-MHz

Fig. 22- Typical performance of the broadband 150,watt
(PEP) amplifier with two RCA-2N6093 transistors.

Fig. 24-- A loop feedback system for gain-leveling..

REFERENCES

COLLECTOR SUPPLY VOLTAGE IVcc'- 28 v

CD

FREQUENCIES' 30 MHz,30.001 MHz

;;

~

~

~
15

IGO 3::

~ -20

150

15
z
o

140

I

~

5g

1MO

-30

130

!
-40
40

~
~
S
o

"w~
~

"
50

60

70

80

90

100

110

120

CASE TEMPERATURE 1Tcl-·C

I. E.W. Pappenfus, W.B.· Bruene, and 1.0. Schoenike,
Single-Sideband Principles and Circuits, chapter 4,
McGraw-Hill, New York; 1964.

2. D. Carley, P. McGeough, and J. O'Brien, "The Overlay
Transistor," Electronics, vol. 23, no. 17, pp. 70-77;
August 23, 1965 3. D.J. Donahue and B. A. Jacoby, "Putting the Overlay' to
Work," Electronics, vol. 23, no. 17, pp. 78-81; August
23,1965.
4. J. Tatum, "RF Large-Signal Transistor Power Amplifiers;
Part III- Matching Networks," Electronic Design News,
vol. 10, no. 8, pp. 66·80; July 1965.
5. c.L. Ruthroff, "Some Broadband Transformers," Proc.
IRE, vol. 47, pp. 1337-1342; August 1959.

Fig. 23- Performance of the 150-watt PEP amplifier as a
functio" of case temperature at 30 MHz.

6. O. Pitzalis, Jr. and T. Course, "Broadband Transformer
Design for RF Transistor Power Amplifiers;" Proceedings
0/1968 Electronic Components Conference, pp. 207-216.
7. R. Turrin, "Broadband Balun Transformers," QST, vo\.
48, no. 8, pp. 33-35; August 1964 •

436

AN-4774

oornm

RF Power Transistors

Solid State
Division

Appl ication Note
AN-4774
Hotspotting in
RF Power Transistors

by C. B. Leuthauser

Some

rf power transistors can suffer a long-term

deterioration of performance during linear operation (class A
or AB) or when operated with high collector supply voltage
or into a high load VSWR, even though the dissipation is
within the limit set by the classical junction-to-case thermal
resistance. This performance degradation is caused by a
localized heating effect called "hots potting" . Hotspotting

.,
I

results from local current concentrations in the active areas

of the transistor; it can cause catastrophic thermal runaway
as well as long-term failure.
The presence of hotspots can make virtually useless the
present method of calculating junction temperature by
measurements of average thermal resistance, case temperature, and power dissipation. However, by use of an infrared
microscope, the spot temperature of a small portion of an rf
transistor pellet can be determined accurately under actual or
simulated device operating conditions. The resultant peak

6 10
COLLECTOR-TO-BASE VOLTAGE (Vce)-V

Fig. 1- Safe area curve for an rf power transistor,
determined by infrared techniques.

temperature information is used to characterize the device

thermally in terms of junction-to-case hotspot thermal
resistance,8JS_C'
The hotspot thermal resistance can be used in reliability
predictions, particularly for devices involved in linear or
mismatch service.

curve, this region is determined by the following relationship:

DC Safe Area

where TT(max) is the maximum allowed junction tempera-

The safe area determined by infrared techniques represents the locus of all current and voltage combinations within
the maximum ratings of a device that produce a specified
spot temperature (usually 200°C) at a fixed case temperature. The shape of this safe area is very similar to the

ture, TC· is the case temperature, and 8J.Cis the junction-tocase thermal resistance.

conventional safe area in that there are four regions, as

shown in Fig. I: constant current, constant power, derating

p

_ TJ(max) - TC
max 8J-C

(I)

This relationship holds true for the infrared safe area;
Pmax may be slightly lower because the reference temperature Tj(max) is a peak value rather than an average value.
The hotspot thermal resistance (8JS.c) may be calculated
from the infrared safe area by use of the following definition:

power. and constant voltage. The dotted lines denote a

three-region form of safe-area plot, in which the fourth
region is outside ofVCEO or Ic(max).

(2)

Regions I and IV, the constant-current and constantvoltage regions, respectively, are determined by the maximum collector current and VCEO ratings of the device.
Region " is dissipation-limited; in the classical safe area

where TJS is highest spot temperature [TJ(max) for the safe
area] and Pdiss is the diSSipated power (=1 x V product in
Region /I).

11-71

437

AN-4774
The collector voltage at which regions 11 and III intersect,
called the knee voltage Vk, indicates the collector voltage at
which power constriction and resulting hotspot formation
begins. For voltage levels above Vk, the allowable power
decreases. Region III is very similar to the second-breakdown
region in the classical safe area curve except for magnitude.
For many rf power transistors, the hotspot-limited region can
be significantly lower than the second-breakdown locus.
Generally Vk decreases as the size of the device is increased.
Fig. 2 shows the temperature profIles of two transistors
with identical junction geometries that operate at the same
dc power level. If devices are operated on the dissipationlimited line of their classical safe areas, the profiles show that
the temperature of the unballasted device rises to values
1300(; in excess of the 2000 C rating. Temperatures of this
magnitude, although not necessarily destructive,. seriously
reduce the lifetime of the device.
34.

~

323

0:

~

296

I'!

180

...
2

262

'1

r--

Irl t

\

20.

o

f

10

Vea =6.5 VOLTS
PDlSS "13 WATTS
Te· IOO • C

RF Operation
In nermal class C rf eperatien the hetspet thermal
resistance is appreximately equal to. the classical average
thermal resistance. If the preper collecter loading (match) is
maintained, 9JS-C is independent ef eutput pewer at values
below the saturated- er slumping-pewer level, and is
independent ef cellector supply voltage at values within +30
per cent ef the recemmended eperating level.
Pewer constriction in rf service nermally eccurs only for
collecter load VSWR's greater than I: I. A transister that has
a mismatched lead experiences temperatures far in excess ef
device ratings, as shown in Fig. 4 fer VSWR ef 3: I. Fer
cemparisen, the temperature prome fer the matched cendition is alSo. shewn in Fig. 4.

I--I--

UNBALLASTED

I

B'L~'STED

20 30 40

f

50 60 70 80

'oISTANCE ACROSS PELLET
(MILS)
LEFT EDGE
RIGHT EDGE

OF PELLET

Fig.2-

OF PELLET.

Thermal profiles of a ballasted and an unballasted
power transistor during dc operation.

Emitter Ballasting
The prefIles shewn in Fig. 2 also. demenstrate the
effectiveness of emitter ballasting in the reductien ef pewer
(current) censtrictien. In the ballasted device, a biasing
resister is intreduced in series with each emitter er small
greups ef emitters. If one regien draws tee much current, it
will be biased tewards cuteff, allewing a redistribution ef
current to. ether areas ef the device.
The ameunt ef ballasting affects the knee veltage, Vk, as
shewn in Fig. 3. A peint ef diminishing returns is reached as
Vk approaches VCEO'
30

"" -/'

/

/

Ct4
01
0.2
0.3
TOTAL BALLASTIt-iG RESISTANCE-OHMS

Fig. 3- Safe-area knee voltage for an rf power transistor as
a function of total ballasting resistance.

438

PELLET DISTANCE (MAJOR AXIsl-INCH

Fig. 4- Thermal profile of a power transistor during rf
operation under mismatched conditions and under
matched conditions.

Fig. 5 is a typical family ef thermal resistance curves that
indicate the respense ef a de>ice to. varieus levels of VSWR
and collecter supply veltage. 9JS-C respends to. even slight
increases in VSWR abeve I : I ana saturates at a VSWR in the
range ef 3: I to. 6: I. The saturated level increases with
increasing supply voltage. Devices with high knee veltages
tend to. show smaller changes of9JS_C with VSWR and supply
veltage. 9JS-C under mismatch is independent of frequency
and pewer level, and reaches its highest values at lead angles
that produce maximum cellector current. Pewer level does,
hewever, influence the temperature rise and probability of
failure.
Device failure can also eccur at a load angle that
preduces minimum cellector current. Under this cenditien,
cellecter veltage swing is near its maximum, and an
avalanche breakdewn can result. This mechanism is sensitive
to frequency and pewer level, and becemes predeminant at
lower frequencies because ef the decreasing rf-breakdewn
capability ef the device.
Broadband Operation
The amount ef hetspetting produced by wideband
eperatien ef a transister depends .upen beth device and

AN-4774

"'uz

6

e•

/

~

;;;;a
~~

ci-I

~~

4/h

V

'""" ;:.,
....

- 'VII

o

,

....

~...

;:J:

r-"CC'28V
[""2"6 V
24V

V

Tr'OO;C

2

1.1

2.1

3.1
4:1
5.1
LOAD VSWR

6.\

7.\

Fig. 5- Mismatch·stress thermal characteristics for the
RCA-2N5071.
network characteristics. The output network in a broadband
rf amplifier usually does not provide ideal collector loading
across the entire range of frequencies. Therefore the hotspot
thermal performance is characterized for these devices when
terminated by a specified output network.
The RCA-2N5071 is a 24·watt transistor developed for
wideband applications in the frequency band from 30 to 76
MHz. In the wide band circuit shown in Fig. 6, this transistor
has a nominal collector efficiency of 50 per cent and an rf
gain that varies from 13.5 dB at 30 MHz to 9 dB at 76 MHz
for a power output of 20 watts. The hotspot thermal
characteristics for the 2N5071 in this circuit are shown in
Fig. 7 for a matched load and for a 3:1 VSWR (worst·case
phase angle) load condition. The high case temperature,
1000C, simulates actual environmental conditions.
The RCA-2N6105, a 30-watt transistor, is similarly
characterized for use in the 225-to-400·MHz band. In the
wideband circuit shown in Fig. 8 this device has a nominal
collector efficiency of 75 per cent and an rf gain that varies
from 7.5 dB at 250 MHz to 6 dB at 400 MHz for a power
output of 30 watts. The hotspot thermal performance of the
2N6105 is shown in Fig. 9 for matched and 3:1 VSWR load
conditions with a case temperature of 85 0C.

Case·Temperature Effects
The thermal resistance 'of both silicon and beryllium
oxide, two materials thai are commonly used in rf power
transistors, increases about 70 per cent as the temperature
increases from 25 to 2000 C. Other package materials such as
steel, kovar, copper, or silver, exhibit only minor increases in
thermal resistance (about 5 per cent). The over·all increase in
ElJS.C of a device depends on the relative amounts of these
materials used in the thermal path of the device; typically the
increase of ElJS.C ranges from 5 per cent to 70 per cent. Fig.
10 shows the rf and dc thermal resistance coefficients for
two typical rf transistors. For both cases, the coefficient is
referenced to a 1000C case and is defined as follows:
ElJS·C
KeIOO = 6JS-C at TC - 1000C

(3)

The rf coefficient changes more than the dc coefficient,
because of power constriction that occurs in rf operation at
elevated case temperature.

CI, C2: 55·300 pF trimmer capacitor, ARCO 427, or
eqUivalent
C3, C5: 0.47 !IF ceramic
C4: 1000 pF feed through
L1: Ferroxcube No. VK200 01-3B, or equivalent
TI, T2, T3: 6 twisted pairs (10 turns/in.) of No. 28 wire
connected in parallel. 3 1/2 turns on Indiana
General CF·108-02 ferrite core, or equivalent
T4, T5: 2 lengths of RG·196A/U cable connected in
parallel. 7 turns on Indiana General CF·III-QI
ferrite core, or equivalent.
Fig. 6- Wideband rf amplifier circuit for operation from 30
to 76 MHz.
40 0
Vee; 24V

-

0

0

I'0 0

l

Tc _100°C

po·

20 W

I

~

~
1:1 V!WR

~

I

~~.o

-,'
"u
ffi ~.Of---+----'l'''--f---.L..---l
,,"
...;;;
6~

~ ~ 3.0r----j----t---"1.--f--+-----j
:z:~
~O,L-----.L..----~-----L-----L----~

30

40

50

60

70

80

FREQUENCY Ifl- MHz

Fig. 7- Broadband thermal performance of the RCA2N5071 in the circuit of Fig. 6.

439

AN-4774

___ J

400

6

r

30 o~

~~
!i1 ~ zo 0
~
100

Vee

CI: 0.8-10 pF, Johanson 2954'
C2: 15 pF silver mica

~

_I
Vee- ZSV
TC· SS- C
PO·Z5W

I--...

....

-

3:1 VSWR

II, VSWR

I

7D

;I"
ffi ~ 6.0'f--,..L.+--+--+--+----1,--.."",....£...-1
~!!

~~

C4: 47 pF chip, Allen-Bradley BI64701'

:I:~

~~ 5.0

4~2h5-...,Z:!5"0--::Z,!;75;----;-30!:,0;----::3Zh5-...,3:!"'c;:--::!o--.,.!

C5: 62 pF chip, ATC·100'
C7,CIO: 1000pF chip,Allen-Bradley B161021'

-

I

-I~

C3: 33 pF chip, Allen-Bradley B163301'

C6: 68 pF chip, ATC-IOO'

/'

FREQUENCY (f) -MHz

Fig. 9- Broadband thermal performance of the RCA2N6105 in the circuit of Fig. B.
1.5

C8: 22 pF chip, Allen-Bradley B162201'
C9: 6.7 pF chip, Allen-Bradley B166791"
CII: 1-20pF,Johanson 5502'
C12: 1000 pF feedthrough

~

-/

C 13: I !-IF electrolytic
L1: Hurns, 5/32-in. l.D. No. 20 wire

V

i-----'3!-

------

-

./

Vi'

2N5071

~

L2: 17/32-in. length No. 20 wire
L3: 5/32-in.length transistor base lead
5

L4, L6: 13/16-in.length No. 20 wire
L5: 9/16-in.length No. 20 wire
L7: 7/8-in. length No. 20 wire
LS: RFC I !-IH Nytronics"
RI: 5.1 ohms, 0.25 watt

5

g
;;;

* or equivalent
Fig. 8- Wideband rf amplifier circuit for operation from
225 to 400 MHz.

"

~

<;
ii:

ti
8

I.

01--- I-

'"
u

:i

V

~

V

V2N6105

r---1c

~

'"'" o. 5

.
-'

~
"I--

40

60

80
100
120
140
CASE TEMPERATURE (TC }_OC

160

Fig. 10- Thermal resistance coefficients of the RCA-2N5071
and RCA-2N6105.

440

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-601O

OOCIBLJl]

RF Power Transistors

Solid State
Division

Application Note
AN-6010

Characteristics and Broadband
(225- to- 400-M Hz) Applications
of the RCA- 2N6104 and 2N6105
UHF Power Transistors
2N6105

2N6104

by Boris Maximow

The 2N6104 and 2N6105 uhf power transistors feature
the silicon overlay multiple-emitter-site construction with
internal ballasting resistors connected in series with the
emitter structure. These transistors, which are electrically
identical, are intended primarily for use in large-signal,
high-power cw and pulsed amplifiers in vhf and uhf
equipment at freqllencies up to 600 MHz. The 2N6104 is
supplied in the RCA HF-32 flanged ceramic-metal hermetic
stripline package, and the 2N6105 is supplied in the RCA
HF-19 (JEDEC TO-216AA) studded ceramic-metal hermetic
strip line package. These packages are characterized by low
parasitic inductance and are ideally suited for use in either
microstripline or lumped-constant vhf and uhf power
amplifiers.
This Note describes basic performance characteristics and
specific circuit design details related to the application of the
2N6104 and 2N6105 transistors in broadband uhf power
amplifiers intended for use over the frequency band from 225
to 400 MHz. The circuit designs shown in this Note use 2N61 05
transistors. Equivalent performance can also be achieved,
however, when 2N6104 transistors are used in the designs
provided that adequate consideration is given to the
mechanical differences of the package..
Overdrive Capability
The 2N6104 and 2N6105 transistors are made more
electronically rugged by use of emitter ballasting. The
electronic ruggedness of rf power transistors is manifested by
their overdrive capability and by their ability to withstand
the effects of load-pulling. Overdrive tests, rather than
load-pulling tests, are used to define the electronic ruggedness of rf power transistors, however, because load-pulling
tests are destructive and the results obtained have poor
repeatability. Despite these shortcomings, load-pulling tests
can still be very useful. For example, load-pulling experiments have shown that the capability of the 2N6104 and
2N6105 transistors to withstand load-mismatch conditions is
at least 1.5 times greater for operation under pulsed
conditions with a duty factor of 50 per cent than for cw

operation. This factor is important for applications in which
amplitude modulation is employed.
Overdrive specifications are extremely important for rf
power transistors because in many applications the transistors are subjected to inputs that are substantially larger than
those specified for normal operation. The 2N6104 and
2N6105 transistors are required to withstand overdrive tests
in which an input drive of 12 watts is applied. This input
drive is 25 per cent larger than the normal input drive of 9.5
watts recommended for these devices at 400 MHz. The
ability of the transistors to operate safely under these
overdrive conditions is effectively controlled by careful
definition of the amount and type of emitter ballasting
employed in them. The emitter ballasting resistance is provided by a polycrystalline silicon layer between the active
emitter regions and the emitter bond pads. This layer is
doped to obtain a positive temperature coefficient of
resistivity so that the effective amount of ballasting increases
with a rise in temperature.
Hot-Spot Thermal Resistance
The classic definition of the thermal resistance of a
transistor assumes that the pellet is uniformly heated
whenever power is dissipated in the device. Recent investigations, however, have shown that the voltage-current
combinations in a power transistor during rf operation may

cause hot spots to be developed in localized areas across the
transistor pellet. These hot spots severely restrict the
maximum power dissipation of the transistors. The classic
thermal resistance, therefore, cannot be used to provide
accurate predictions of the power·dissipation capability of rf
power transistors. This thermal resistance continues to be
very useful, however, because it serves as the basis for the
determination of the required size of the transistor pellet and
provides an indication of the effectiveness of the thermal
bond of the pellet to the metallized pad.
The hot-spot thermal resistance of an rf power transistor
takes into account the nonuniform temperature profile
across the pellet. This thermal resistance is determined on the

1·73

441

AN-6010
25or---,----,----,----r----,.---,

basis of the highest temperature of the entire pellet_ The hot
spots in an rf power transistor are a function of the operating
frequency, the degree of load mismatch, the case temperature, and the collector voltage_ Figs. 1 through 4 show the
relationship of each of these factors to the hot-spot
temperature and thermal resistance of the 2N6104 and
2N6105 transistors. The use of emitter ballast resistors in
these transistors results in a more uniform temperature
profile across the pellet so that the formation of hot spots is
substantially reduced. The peaks in the curve shown in Fig. I
indicate emitter regions, and the valleys indicate base regions.
The curves shown in Figs. 1 through 4 were obtained by
infrared scanning measurements of the pellet temperature.
For these measurements, the sealing cap was removed from

u

1~

200

~

~ 150'f---~-::'...-!~--+-""'"--t:::."

~
I

~ 100~~~~-+----+_--_r--~--~

.0

~

7.0

"

~ 6.0

;

ITOr-...,----,,.---,-----,---....-----,----.----,-.,

.'"

CENTER OF HIGHEST

-'

TEMPERATURE NODE

ffi

u

.

'1 '62

F

r- 4.01---+---d._:::...+_--_r--~----_I

'"

~146r-~--~~-~-r~--~J--+~--t----+~--+-~

~
~

~

%

~132r_+_+--1----~----r_--~----r_--_+_4.-t-4

"''--I.£----I''""""--......----;!n---+-----!."----.,!,,.---~..J
DISTANCE ACROSS PELLET-MILS

3.04LO--.....J.~0--~60----70L----80'---~90'---,.JOO
CASE TEMPERATURE-DC

Fig.3- Hot-spot temperature and hot-spot thermal resistance of a 2N6104 or 2N6105 as a function of
case temperature_

Fig. 1- Typical thermal profile across a 2N6104 or 2N6105
pellet during rf operation.

l'

~400

=<

~ 3001---:;;0+---+----1---+

"~

~200r---1--=~~~~~j:==:j~U!~~j

~,OO'---~---L----'---~--~----L---~

;;j

ffi •.0i:=:==:::1=--~-~~J--~=:;':;::=~

F
.~
.FREQUENCY- MHz

Fig. 2- Hot-spot temperature and hot-spot thermal resistance of a 2N6104 or 2N6105 as a function of
frequency.

442

, 4.0L-_.l.-_..I-_..J...._....J._ _L-_.L_~
30
32
34
35
2.
31
~
28
COLLECTOR VOLTAGE-V

Fig. 4- Hot-spot temperature and hot-spot thermal resistance of a 2N6104 or 2N6105 as a function of
collector voltage.

AN-601O

the top of the transistor. Removal of the sealing cap results
in some reduction in transistor gain. As a result, the hot·spot
measurements are somewhat conservative because the over-all
operating efficiency would be increased for the normally
higher transistor gain. These measurements were taken with
the transistor operated in the broadband circuit shown in
Fig. 5. (A broadband circuit does not always present an ideal
load for the transistor.)

.,

Vec

type of load circuit into which the transistor operates. The
supply-voltage limits recommended for the 2N6104 and
2N6105 transistors are determined on· the basis of dynamic
voltage breakdown tests in which the devices are subjected to
an "all phase" load·mismatch condition during pulsed
operation. Experimental results obtained from pulsed operation of these transistors are shown in Fig. 6. These results
were measured with the transistors operated in the 400·MHz
microstripline amplifier circuit shown in Fig. 7. For the
load-mismatch conditions of the tests, the transistors
demonstrated the ability to handle peak rf power outputs in
excess of 70 watts when operated from a collector supply of
40 volts. For the transistors to survive these output levels,
the test circuit must be non-oscillatory.

..I • a

FREQUENCY (fl- 400 MHz
PULSE DURATION Ip).IOO~.
DUTY FACTOR -10 % AN~ I"•

Vcc· 4OV

ffi
c,: 8.2 pF chip. Allan-Bradley·
C2: 1B pF silver mica
C3: 33 pF chip, Allen-Bradley·
C4: 47 pF chiP. Allen-Bradley·
CS: 68 pF chiP. ATe-10a D
C6: 62 pF chiP. ATe.10Do

C7: 1 flF electrolytic
CO: 1000 pF faedthrough
eg, C12: 1000 pF chip, Allen-Bradley·

e13: 0.8-10 pF variable air,

Johanson No. 3957·
'-1: 2 turns, 5/32 In. I,D. coil

'-2: 17/32 in. long wire

'-3: RFC. 0.1 fJH. Nytronics·
'-4: 5/32 in. long transistor.
base lead
'-5. '-7: 13/16 in. long wire
L6: 9/16 in. long wire
7/B In. long wire

C10: 22 pF chiP. Allen-Bradley·

'-a:

e11: 6.9 pF chiP. Allen-Bradley·

R" 5.0 n.1I4 W
All wire is No, 20 AWG

~

70

~

60

~ ""
~

.. 40

.0

'0o

f-- \---

IVvce"

,

t

V /'"

5V - \ - - -

Vcc·,· v -

I'/V

J/
,0

.0

40

PEAK INPUT PDWER-W

.Or equivalent.

Fig. 5- 225-t0400-MHz broadband power amplifier.

Fig. 6- Pulse operation of the 2N6104 or 2N6105.

Pulsed Operation

Broadband Circuit Design Approach

Two factors contribute to the increased capability of a
transistor to handle rf power with changes from operation in
the cw mode to pulsed operation at lower duty factors. For a
given peak power level, the transistor dissipation decreases
significantly with a reduction in the duty factor; consequently, a substantial increase in power-handling capability
results. A moderate increase in power·handling capability
also results because the peak current·handling capability of
the transistor inlproves as the duty factor becomes smaller.
Although the power-handling capability of an rf tran·
sistor increases with decreases in duty factor, the transistor
power gain is independent of duty factor. Full utilization of
the increased rf power-handling that results from pulsed
transistor operation, therefore, requires that the collector
supply voltage be increased to assure that the gain is
maintained at reasonable levels. Care must be taken,
however, to assure that the breakdown voltages of the
transistor are not exceeded. The maximum collector supply
voltage that can be safely applied to an rf power transistor
without breakdown levels being exceeded is a function of the

In general, either of two basic approaches is used in the
design of broadband high-power rf amplifier chains. In one
approach, each stage of the chain consists of a pair of
transistors combined by use of quadrature combiners. In the
other approach, a single·ended configuration is used for each
stage throughout the chain except for those stages in which
the power-output requirements exceed the capability of a
single transistor. In such stages, combined pairs of transistors
must be used. The block diagrams of the three·stage amplifier
chains shown in Fig. 8 illustrate the basic configurations that
result from each design approach.
Obviously, the use of combined pairs of transistors in
each stage, as shown in Fig. 8(a), is the more complex design
approach. With this approach, the space requirements of the
amplifier chain are greater, and a larger number of transistors
and combiners are used. Moreover, each time a combiner is
used, the gain and efficiency of the over·all circuit are
reduced. For these reasons, the approach that uses a
single.ended configuration per stage is generally preferred.
One definite advantage of the combined·transistor·pair

443

AN-801O

0.0937
12.38)

r.======l

1

1.490
(37841

·OUTPUT STRIP

~

3.375
(8572)··

L

e,. C5. C7: 1000 pF chiP. ATe-l00·
C2. C4: '-20 pF air variable, Johanson 4802C3: 16 pF sliver mica
C6: 1 IlF electrolvtlc
l,: a.11tH RF choke
Rl,5.1!l1/2W

5'~)

032

(S·.I3)

30.25

(6.35)

4.050

(103.0)

LO.25

(6.35)

•

PRODUCED BY REMOVING UPPER LAYER
OF DOUBLE-CLAD TEFLON BOARD,
I OZ., V32 IN. THICK, (e -2.6), OR EQUIVALENT
DIMENSIONS IN PARENTHESES ARE

MILLIMETERS.

·Or equivalent.
NOTE: POINTS OF APPLICATION FOR C, AND C7 ARE
SHOWN ON THE INPUT AND OUTPUT STRIPS

IN THE DRAWING AT RIGHT ( ... )

Fig. 7-400-MHz amplifier test circuit for measurement of output power.

'01

INPUT

OUTPUT

( b)

Fig. B-Broadband power amplifier chains: (a) cascade of combined-pair amplifier stages;
(b) cascade of two sing/e-ampfifier stages and one amplifier-pair stage."

444

rl

AN-G01O
approach, however, is that cascading of successive stages in
the chain is relatively simple and straightforward. Each stage
is a building block that, because of the properties of the
quadrature combiners, has a very low input VSWR across the
entire frequency band, an essential requirement for troublefree cascading.
In the single-ended-configuration approach shown. in Fig.
8(b), a low input VSWR across the entire frequency band is
much more difficult to attain, and each stage of the amplifier
chain must be very carefully designed. The increased over·all
gain, higher efficiency, smaller size, and reduced cost made
possible by the successful cascading of single.ended stages
usually provides sufficient justification for the additional
engineering effort required in this approach to the design of
broadband rf power-amplifier chains.

loading for· the transistor, the design of this network is
essentially the same whether the amplifier is to be used singly
or is to be combined with another amplifier by use of
quadrature combiners. In the design of a 225-to-400-MHz
power amplifier, the first step may be to design a broadband
Chebyshev filter to match the real part of the transistor
parallel eqUivalent load impedance (approximately 10 ohms
for the 2N6105 transistor) to the output impedance (usually
50 ohms) over the speCified frequency band.l,2 After the
component values for the filter have been computed, these
values are plotted on a Smith chart and are changed as
required to compensate for the capacitive output of the
transistor. This admittedly tedious process, when supple.
mented by laboratory experimentation, yields highly
acceptable results. The effectiveness of this approach is
illustrated by a plot of the output network of the broadband
amplifiers shown in Figs. 5 and 9 on the Smith chart shown
in Fig. 10. The curves on this chart should be compared with
the output-impedance trace obtained on a circuit analyzer,
shown in Fig. 11. This comparison indicates that some of the
components in the output network may require precise
values.

Single-Ended Amplifier

Insofar as the function of the output network of a
high-power broadband uhf amplifier is to provide proper

,.,
c,: 0.8-18 pF variable, Amperex
C2!
C3!
C4!
eS!
eS!
C7!

24
22
33
47
62
68

L,: 2 turns, 5/32 in. 1.0.
L2! 1/2 in. long wire"
L3! 13/32 in. long wire
L4! RFC, 0.1 1lH. Nytronics

pf. silver mica

pF chiP. Allen-Bradley·
pf chip, Allen-Bradley.
pF chip. Allen-Bradlev·
pF chip, ATe-,DO
pF chip. ATe-l00
CO: 1 J.lF. electrolytic
Cg: 1000 p"f feedthrough

LS! 5/32 In. long transistor base lead
La. La: 13/16 in. long wire
L7: 9/16 In. long wire
Lg: 7/a in. long wire

R1: 5.0

n. 1/4 W

C10. e13! 1000 pF chip. Allan-Bradley
e'l: 6.9 pF chiP. Allen-Bradley·

All wire is No. 20 AWG

C12! 6.9 pF chiP. Allen-Bradlev·
C14! 0.8-10 pf variable air, Johanson #3957-

·Or equivalent.

I
~

... -~c- ":::--

--

~

I
INPUT YSWR

•
225

I
250

~
275

300

325

350

fREQUENCY- MHz

•
"

I
375 400

(bl

Fig. 9-Broadband 225·to400·MHz amplifier with input network designed for· minimum
input VSWR; (a) circuit diagram; (b) performance data.

445

AN·601O

9.BnH

15.5nH

17.5nH

15'5nH~50Jl
Fig. to-Smith Chart design curves and circuit diagram for broadband output network.

446

AN-6Ol0
stages. The cumulative excess gain may result in an excess output within the amplifier chain that may possibly overdrive a
following stage to destruction. Consequently, it is advantageous to introduce some method of gain equalization
between adjacent stages. The output leveling schemes
employed are usually looped about several stages and have no
control over tl,e gain of individual stages.
Gain Equalizer
Fig. 12 shows a suggested broadband gain equalizer.
When this equalizer is used with the broadband amplifier
shown in Fig. 9, the resultant stage has a very low input

r______~}_~-1T~"~~~S~M~IS~SIO~N~L~'NIES

OPEN

INPUT

P, . OUTPUT

+{____--=-:!l9:":o·j--~---OW
VCC-Z8V

Z2 =91.2 ohms
Z3 = 53.4 ohms

::

Fig. 15- Combination of two 2N6267 amplifiers to form a
3().watt, 16-d8 module.

f::~1 I-I I 1I 1J

l:8il EEl H
i: I
620

I I I I I I I 1
190

950

fREDUENCY(MHd

Fig. 18- The performance of two 3().watt modules combined to form a 6().watt module.

I:tttmtlj
i:
,.

:::~I~

r:bt 1 1~I
~

m

I I I

I:::::::
~

AB,BC,C('EF,AO,CF, 1.1"ISTRIPlINE OI$TANCEI
2S MIL-THICK ALUIlINA

FREQUENCY'MH"

Fig. 16- RF performance of the circuit of Fig. 15.

Fig. 19- Design of a synchronous branch·line coupler.

463

AN-611a

Acknowledgements

The author thanks J_J. Walsh for his work in the
construction and testing of the broadband modules discussed
in this Note.
References
I. G. L. Matthaei, "Short-Step Chebyshev Impedance

Transformes", IEEE TranSQctions, Vol. MTT·14, No.8,
372-383, August 1966.
2. H. A. Wheeler, "Transmission-Line Impedance Curves",
Proceedings of the IRE, Docember 1950.
3. A. Presser, "RF Properties of Microstrip Line", Micro·
waves, March 1968.
4. M. Caulton, J. J. Hughes, H. Sobol, "Measurements on
the Properties of Microstrip Transmission Lines for
Microwave Integrated Circuits", RCA Review, September
1966.

464

5. H. A. Wheeler, "Transmission-Line Properties of Parallel
Strips Separated by a Dielectric Sheet", IEEE Transactions on Microwave Theory and Techniques, 172,
March 1965.
6. H. A. Wheeler, "Transmission-Line Properties of Parallel
Wide Strips by Conformal-Mapping Approximations",
IEEE MIT, 280, May 1964.
7. H. Sobol, "Extending IC Techn,?logy to Microwave
EqUipment," Electronics, March 20, 1967.
8. C. Leuthauser and B. Maximow, "16- and 25-Watt
Broadband Power Amplifiers using RCA-2N5918,
2N5919, and TA7706 UHF/Microwave Power Transistors", RCA Application ~ote AN-4421 , October 1970.
9. Matthaei, Young, J ones, Mi~Ta.,wave Filters, ImpedanceMatching Networks, and Coupling Structures, Section
13.12, pp 825-833, McGraw-Hili (New York), 1969.

_ _ _._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-6126

[Rl(]5LlD

IRF Power Transistors

Solid State
Division

Application Note
AN-6126
60 - and 1 ~O-Watt Broadband
(225-to-400-MHz) Push-Pull R F
Amplifiers Using RCA-2N6105
VH F/UH F Power Transistors
by B. Maximow

In many applications of rf power transistors, the
output-power requirements are greater than can be realized
by any single transistor, ano combinations of transistors are
inevitable. In such cases, successful circuit operation is
critically dependent upon proper choice of the rf power
transistors to be employed in the combinations and selection
of circuit configurations that provide high combining
efficiency. RCA·2N6105 vhf/uhf power transistors offer
features, such as high output-power capability, high collector
efficiency, and internal emitter ballasting, that make them
wen suited for use in rf power amplifiers. In addition, the
low parasitic reactances and package dimensions of these
transistors result in exceptional broadband capabilities that
make possible useful power outputs over more than an
octave in the vhf and uhf ranges.
This Note discusses the use of 2N6105 transistors in
push-pun rf power amplifiers designed for operation over the
:requency range from 225 MHz to 400 MHz. The design and
performance of a basic single-stage push-pun amplifier and
use of combined pairs of this basic circuit to obtain higher
output-power levels are explained. An improved version of
the basic push-pun circuit is also described.

inherent low second-harmonic component of the push-pull
circuit significantly facilitates filter design, a desirable feature
in amplifiers that have bandwidths that approach or exceed
an octave.
The collector-to·collector load resistance in the push-pun
amplifier is twice the collector load resistance of a
single-ended amplifier, and the conector-to-collector output
capacitance is smaller than the collector output capacitance
of a single-ended amplifier. These features result in a lower
transformation ratio in the critical output circuit and,
therefore, in easier impedance matching for a given bandwidth.
The push-pull circuit design approach described in this
Note results in a very simple circuit, as shown in Fig. 1. The
circuit and the transistors, however, must be viewed as

CtRCUIT DESIGN APPROACH

Two RCA·2N610S transistors can be combined in a
push-pun circuit to obtain a highly efficient broadband
amplifier that can supply an output power of 60 watts in the
frequency range from 225 MHz to 400 MHz. Two such
push-pun amplifiers combined by use of quadrature combiners can provide an output power of 100 watts in this
frequency range.
The push-pull circuit is an excellent configuration for use
in applications that require combinations of transistors. The
basic push-pull circuit includes a combination of two
transistors and, therefore, eliminates the need for two extra
combiners that would be required with two single-ended
amplifiers. In multiple transistor combinations, the push·pull
approach requires two less combiners for each pair of
transistors used in the total combination. In addition, the

11-73

CI - 2 TO Ie pF VARIABLE, AMPERE X HT 10 MA/21e OR EQUIV.
C2 - 56 pF, CHIp, ATC-IOO OR EQUIV.
C3,C4' C5'C6 - 1000 pF, CHIP, ALLEN-BRADLEY OR EQUIV.
C7, Ce - I I'F, ELECTROLYTIC
C9.C10 -1000 pF, FEEDTHROUGH
LI -RFC, 0.18 I'H,NYTRONICS OR EQUIV.
L2,L3 -O.75INCH.LONG,NO. 20 WIRE

~~~~g:~:~~ ~II~~: ~gt6~ 6:~~~~~~:~:~::~~ ~~~~:~:~~~~~~;SL~~~~

*"

*SHIELED TEFLON CABLES SUCH AS ALPHA WIRE TYPE 2B31,DABUN
ELECTRONICS AND CABLE CORP. TYPE 2455 OR EQUIV. 92CS.20772

Fig. 1- Circuit diagram for the basic push·pull amplifier.

465

AN-6126

inseparable parts because each must complement the other.
For example, transistor parasitics reactances must be
designed into the circuit very carefully, and the transistor
package dimensions should be such as to enable the designer
to layout his circuit so that parasitic reactances complement
the external elements of the over·all amplifier circuit.
The basic 6().watt push-pull circuit shown in Fig. I can
be used as the building block for a variety of power
amplifiers. Combinations of these blocks can be formed by
use of either quadrature or Wilkinson types of combiners to
attain higher output·power levels.
AMPLIFIER PERFORMANCE
Fig. 2 shows the typical broadband performance of a pair
of 2N6105 transistors used in the basic push-pull amplifier,
and Fig. 3 shows the physical layout of this simple amplifier
circuit. The performance data show that the collector
efficiency is highest at the upper end of the frequency band.
This factor is important because the transistor dissipation is
the function of the amplifier efficiency. This efficiency is
computed on the basis of the total (rf and de) power input to
the transistor. At the high end of the band, the rf component
of the input power is greater than at the low end because of
the gain difference. Consequently, higher collector efficiency
compensates for the high rf power input. The computation
shows an amplifier efficiency of 63 per cent at 225 MHz, of
56 per cent at 300 MHz, and of 67 per cent at 400 MHz.
These results show that the difference between the over-all
efficiency at the low end of the frequency band and that at
90

-

~

?

5

..

,

. / ~ BO~~
Ill>-

j'-..

G~

the high end is not nearly as great as the difference in the
collector efficiency at these frequency extremes,
Fig. 4 shows the linearity characteristics of the basic
push·pull amplifier (i.e., the power gain of the amplifier as a
function of the input power) at the extremes of the
frequency band and at mid-band. The harmonic content of
the output is also shown for the fundamental frequency of
225 MHz, which is considered most critical frequency in
terms of output-filter design.
The basic amplifier shown in Fig. I has a relatively high
input VSWR and, therefore, is best suited for use with
quadrature combiners. Fig. 5 shows a block diagram of the
Vee· 28 V

.... r-.- r::::
~~-

,,""

7

-.- -'-'-.

300 MHz

~,

'"
6

225 MHz

V

-- --- ,-

•

-~

°r*-r

n

3

-10

...3RD HARMONIC
~,

~"

AT FUNDAMENTAL FREQUENCY

I

o

400 MHz

-20

r-- 2NO HARMONIC

.i

ffi
!z
8

!!

z

-;,0 ~

~
6

8

-40

'6

14

10
12
INPUT POWER (Pl)- W

92CS-20774

Fig. 4- Power gain and harmonic content of the basic
push·pull amplifier at 225 MHz as a function of
input power.

70~~
uu
u:

it
60

.on
CASE TEMPERATURE (Tel'" 2S·C
COLLECTOR SUPPLY VOLTAGE (Vee)
OUTPUT POWER (PoE) '" 60W

QUADRATURE
COMBINER

28V

s

I0:1

50n

............
225

,.,

VSWR

250

275

300

325

350

375

400

FREQUENCY (F)- MHz

CONDITIONS: VCC= 28 VDC
Po= 100 W (CONSTANT)

92CS-20773

Fig. 2-

..
.•
.,'

';,
'~
~
.1/: ~" ..",
'\

(.

OUTPUT

..

.....

-

,

•

OC AND RF
DRIVE

('1)

POWER GAIN (Gp)

T

INPUT

225

250

275

300

325

350

375 400 425

FREQUENCY - MHz

.

Fig. 3- Physical layout of the basic (6o-watt) broadband
push-pull amplifier: (a) top view; (b) bottom view.

466

~~~~~~~CY

~

',j

COLLECTOR
EFFICIENCY ('1c)

~
I
I

Typical performance of the pair of 2N6T05
transistors used in the basic push·pull amplifier.

92CS-20115

Fig. 5-

TOD-watt amplifier using combined pair of push·pull
stages: (a) block diagram; (b) performance curves.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-6126

circuit arrangement and the performance of such a combination_ Fig_ 6 shows a photograph of the complete amplifier
which uses four 2N6105 transistors and two quadrature
combiners. This circuit provides an output of 100 watts in
the frequency range from 225 MHz to 400 MHz. The over-all
efficiency for this amplifier, shown in Fig. 5, differs from the
amplifier efficiency of the single push-pull stage discussed
previously. For the single push-pull amplifier, only the actual
rf input to transistors was considered as a contributing factor

INPUT

Table II - Input Power and Collector Currents for the 100.
Watt Push-Pull-Amplifier Combination
VCC = 28 V; Po = 100 W
f
(MHzl

PIN
(WI

- - -400
375
350
325
300
275
250
225

28.2
24.1
21.9
19.7
19.0
20.0
23.1
27.2

ICI
(AI

1C3

1C4

--

IC2
(AI

(AI

-- --

(AI
--

1.12
1.16
1.32
1.40
1.40
1.26
1.14
1.26

1.09
1.14
1.33
1.38
1.36
1.20
1.06
1.16

1.19
1.19
1.20
1.20
1.25
1.23
1.37
1.32

1.19
1.21
1.23
1.23
1.30
1.38
1.44
1.42

Fig. 6- Physical layout of the lOO-watt push-pull amplifier.

to the device dissipation. In the curve of over-all effiCiency
shown in Fig. 5, the entire rf input, part of which is
dissipated in the waste ports of quadrature combiners, is
taken into account. Any collector-current imbalance among
transistors that exist in a push-pull amplifier before
combining is somewhat aggravated by the characteristics of
the quadrature combiners. For comparison, two tables of
actual readings are given. For these readings, the collector
current of each transistor was monitored. Table I shows the
data for the push-pull amplifier, and Table II shows the data
for the two push-pull amplifiers combined as shown in Fig. 5.
The single push-pull amplifier shown in Fig. I because of
its high input VSWR, is not very suitable to be driven
directly by another transistor amplifier. The input VSWR,
however, can be improved to about 2.7: I by addition of
simple LC series network, a' shown in Fig. 7. This
improvement in input VSWR is accompanied by a corresponding increase in gain. Fig. 8 shows performance for the
modified circuit. The gain-frequency response, which shows a
difference in power gain of about 3 dB between high and low
ends of the frequency band, can be flattened by use of

broadband gain-equalizer techniques I provided that an
insertion loss of approximately 0.7 dB can be tolerated. Fig.
7 also shows that, in addition to the LC series network, two
base-to-Eround resistors and one base-to-ground choke are
added i~ the modified circuit. These components are helpful
in suppression of spurious responses which can occur (usually
at lower power levels) at some frequencies. Th. added
components do not affect other performance c,>aracteristics
of the amplifier.
AMPLIFIER DESIGN
A necessary prerequisite for a push-pull amplifier is a
balun transformer. This balun transformer must provide the
'--'---,---'",,""-_ Vcc

Table I - Forward Input Power (Pf)' Reflected Power (Prl,
and Collector Current (lCI for an Improved
Version (Fig. 71 of the Basic Push-Pull Amplifier
VCC = 28 V; Po = 60 W
f
(MHzl
400
375
350
325
300
275
250
225

Pf
(WI

Pr
(WI

IC1
(AI

IC2
(AI

13.6
12.2
11.6
10.6
9.8
8.8
7.5
5.8

0.1
0.6
1.2
1.5
1.6
1.6
1.3
1.2

1.13
1.27
1.40
1.48
1.48
1.43
1.32
1.19

1.0B
1.23
1.37
1.43
1.43
1.38
1.28
1.20

VCC=28;Po=60W
Pf
(WI

Pr
(WI

IC1
(AI

IC2
(AI

17.6
15.5
14.6
14.2
13.0
11.4
9.6
7.8

0.0
0.7
1.6
2.0
2.1
2.1
1.7
1.6

1.2B
1.41
1.57
1.68
1.70
1.63
1.48
1.35

1.25
1.38
1.52
1.60
1.60
1.56
1.45
1.35

"2

CI- 2 TO 18 pF VARIABLE,AMPEREX HT 10 MA1218 OR EQUIV.
C2 - 56 pF. CHIP, ATC-roo OR fQUIV,
C3. C4. C5' CS-IOOO pF. CHIP, ALLEN-BRADLEY OR EQUIV.
C7. Cs -I pF. ELECTROLYTIC
Cg. CIO- 1000 pF FEEDTHROUGH
til - 20 pF, VARIABLE, JOHANSON OR fOUIV,
L 1,L4 -RFt. 0.18 ,...H, NYTRONICS OR fOUIV,
L2,L3-0.75 INCH LONG,NO. 20 WIRE
LS- 0·5 INCH LONG, NO·20 WIRE

~::.R~~A'~~~HL~:E~/:E:lA;: DIElECTRIC,Z o a25 OHMS,3.751~CHES LONG~
T2-COAXIAL LINE,TEFLON DIELECTRIC,Zo"25 OHMS,4.5 INCHES LONG
tf SHIELDED TEFLON CABLES SUCH AS ALPHA WIRE TYPE 2831,OABURN
ELECTRONICS AND CABLE CORP. TYPE 2455 OR EQUIV.
92CS-20T76

Fig 7-

Circuit diagram for improved single-stage push·pull
amplifier.

467

AN-6126

'"

/~C

i'- ~

~

CASE TEMPERATURE (Te)

Z

r::::;

./

V

Output Circuit
7

'-....

6
GpE

25"C

~~~~~Tg~'I."r,.'-;; !V~8~'

procedures that invariably lead to a prescribed broadband
impedance match.

8

28 V

5

..

5:1~
>

VSWR

225

250

275

300

325

350

375

400

,. I~~

FREQUENTY (f)-MHz

Fig. 8- Performance curves for the improved push-pull
amplifier.

necessary impedance-matching transformation. [n high-power
rf broadband amplifiers, such transformations always involve
complex impedances and almost never have transformation
ratios, such as 4: I or 9: I , which are associated with a certain
standard types of broadband balun transformers. [n the
broadband rf power amplifier described in this Note, a
coaxial transmission is used as the required balun transformer. The coaxial line, when supplemented by lumpedconstant components, is the simplest and most versatile type
of impedance-matching device with balun properties. The
transformation properties of this type of transformer are
frequency dependent, but the balun property is not.
The coaxial transmission-line type of balun transformer
offers three major advantages. First, the transmission line can
match almost any two impedances, if the length and the
characteristic impedance of the line are properly chosen.
Second, a coaxial transmission line is a perfect balun. The
grounded braid end of the coaxial cable makes an unbalanced
termination. and the floating-braid end makes 'a balanced
termination. The voltages on the center conductor and the
braid have a 180-degree phase relationship to each other at
any given point along the line. These voltages are also evenly
split, because apparently no rf leakage currents exist between
the floating part of the braid and the ground to any
appreciable degree. (This assumption was verified in an actual
amplifier by reversal of the input line at the bases of
transistors. No evidence of any change in the drive levels to
either transistor was detected.) Finally, in the frequency
range of 225 to 400 MHz, the line lengths required for
proper transformations are convenient and do not present
any layout problems.
A graphical design approach to the design of the
amplifier transformations consists of making a model for the
matching network, reducing this model to a form that can be
plotted on a Smith Chart, and then plotting component
reactances. This approach involves a trial-and-error type of
iterative process that is tedious and time-consuming.
Unfortunately, it does not seem likely that this design
method can be easily reduced to a set of steps and

468

Fig.. 9 shows a diagram of a model that. simulates the.
output circuit of two 2N6105 transistors operated into a
50-ohm load impedance. This diagram shows that the
push-pull circuit requires a collector-to-collector load resistance that is twice the value of the collector load resistance
required by a single-ended amplifier. The collector-tocollector capacitance of the push-pull amplifier should be less
than the output capacitance of transistor in a single-ended
amplifier. This latter factor should be helpful in the
achievement of broadband amplifier characteristics. Some of
the components shown in the diagram can be either
measured or computed, and other components must be
determined by approximations. The approximations are
believed to be reasonable and therefore admissible, because
the purpose of this exercise is not to compute exactly the
transformation made by this rather complex network, but to
ascertain whether this circuit-design approach could provide
a broad estimate of the load impedance. An optimum
impedance match can then be effected by experimentation.
Fig. 9(a) illustrates a balanced-to-unbalanced impedance
transformation shOWing the minimum of critical components. The capacitors C I represent the output capacitance of
a tran;istor. The resistor RI is the real part of the collector
load impedance. Although the transistor output does not
require the conjugate match, for the purposes of computation, the output can be treated as though such a match is
required by assignment of the value of a real part of the
collector load impedance to the real part of the source
impedance. The inductor Ll is the parasitic inductance of
the package made up by the path from the pellet to the

EJ

/=O.215~

AT 400

MHZ~

=O.161A AT 300 MHz

1 =0.12IA AT

225 MHz

50n

(a)

(b)

NOTES:
VALUES FOR R, AND C, ARE TAKEN FROM 2N6105 DATA SHEET AND ARE

ALSO GIVEN IN TABLE

m

THE TRANSMISSION LINE USES A TEFLON DIELECTRIC AND HAS A
Zo"'25 OHMS

OTHER COMPONENT VALUES AS SHOWN
92CS-20778

Fig. 9- Output-circuit model with assumed component
values.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _--,-_ _ _ _ _ _ _ _ _ _ _ AN-6126

connecting point of L2. The inductor L2 is the shunt
inductance which also serves as the dc feed. The inductor L3
consists of a transistor collector lead in series with a
1000-picofarad blocking capacitor and the unavoidable
lengths of the center conductor and the braid at the end of
the coaxial line .
The transmission line, L2, and, to some extent, L3 are
controlled by the designer; the other components are not,
except by collector voltage variation. For the suggested
graphical approach to be useful, the circuit scheme is
simplified to the one shown in Fig. 9(b). The simplified value
of the output capacitance is approximated by (CI)/2.
Admittedly, the exact way in which the output capacitors
combine in a class C push-pull transistor amplifier is
somewhat obscure, but the approximation seems reasonable.
The 2N6105 data sheet indicates the load impedance for
three frequ~ncies. The values of these impedances are
tabulated in the left·hand column of Table. III. The
Table III - Collector-to·Collector Load Resistances and Out·
put Capacitances for 60-Watt Broadband Push·Pull
Amplifier
Values Obtained
from Fig. 10

Desired Values
f
(MHz)

RCL
(ohms)

Co
(pF)

RCL
(ohms)

Co
(pF)

225
300
400

28
22
16

17.5
17.0
15.0

26
18
24

10.0
11.7
18.6

--

impedance plot shown in Fig. 10 uses the assumed values
given in Fig. 9. The impedance plot starts at 50 ohms and
goes towards the load so that it ends on the capacitive side of
the chart at a point that represents the source for the circuit
shown in Fig. 9. If the data-sheet values for the 2N6105 and
the assumed approximations in the model of Fig. 9 are not
taken as something inviolate, but rather as very good
approximations for design gnidance, then the two sets of
values in Table III come close enough to each other to
indicate that the proposed method warrants a trial.
Input Circuit
Matching requirements in the input circuit are very
similar to those in the output although there are some
significant differences. First, a conjugate match at the base is
required for maximum power transfer. Second, the
maximum.power-transfer condition is most desirable at
upper frequencies, because some reflected power can be
tolerated at lower frequencies. In fact, the greater the
difference in transistor gain at the low and high ends of the
freque.ncy band, the greater the amount of reflected power
that can be tolerated at lower frequencies. These statements
are valid for a single-stage amplifier provided that means are
available to handle the reflected power.
If a graphical method similar to that used for output
matching is employed in the design of the input circuit, a

92CS-20779

Fig. 10- Output·circuit impedance/admittance chart.
model with assumed values, such as shown in Fig. II, is
devised. With the 50·ohm source used as the starting point,
values are chosen to match the source to the load at
400-MHz. (In this case, the load is the input to the
transistors.) Once the match is obtained, all the values are
rescaled to 225-MHz, and the plotting steps are retraced from
the load towards the source. The impedance plot in Fig. 12
shows a transformation from 50 ohms to 2.5 + j 3.25 at
400-MHz. However, the 225·MHz load-to·source retrace
shows an input VSWR referenced to 50 ohms of 9 to I. With
this VSWR, approximately 65 per cent of the total forward
power will be reflected. Six watts of input power is needed
to obtain 60 watts in the output from two 2N6I05
transistors at the gain of 10 dB at 225 MHz. For an input
VSWR of 9 to I, a total forward power of 17 watts would be

:Sf:

~ -0.178>

r---,

I
I
I
I

L

AT 400 MH, ~

~2.1 nH

L,

.,

=0,100). AT 225 MHz

L3"1.5nH

.,

c,

I
I
I
I

_=_..J

L2

L,

(01

(bl
92C5-Z0780

Fig. 11- Input-circuit model

with assumed component

values.

469

AN-6126 _ _ _ _ _ _ _ _ _ _ _ _ _ _,..--_ _ _ _ _ _ _ _ _ _ _ __

importance of the circuit layout. For example, the base-tobase capacitor value is indicated as 56 picofarads. This value
is very high for use at 400 MHz; consequently, care must be
excercised in the placement of this capacitor to assure a
minimum oflead length. Another critical area is that near the
transistor collectors. When inductance values of I to 2
nanoheuries are significant, extreme care must be excercised
in the placement of components. A suggested layout for the
pair of 2N6105 transistors is shown in Fig. 13. Placement of
the transistors further apart than indicated may present
problems in the critical areas mentioned a~ove.

CHIP CAPACITOR _ : : - - - - - - - - -

Fig 12- Input-circuit impedance/admittance chart.

required. At 400 MHz, an input of 16 watts is required, to
obtain an output of 60 watts from a pair of typical 2N6105
transistors. These results provide enough impetus for
laboratory trial. In fact, the experimental results yielded
considerably better performance than anticipated by these
calculations. Further refinements, such as the series·resonant
LC circuit added to the amplifier shown in Fig. 7, and the
resultant performance improvement are achieved by
extention of the graphical method outlined above. This
extension technique consists of determining circuit changes
that improve the match at lower frequenCies without any
degradation in the match at 400 MHz.
LAYOUT CONSIDERATIONS

An examination of the circuit models and the Smith
Chart plots for them provides some indication of the extreme

470

92CS-Z0182

Fig. 13- Suggested layout for a pair of 2N6105 transistors
employed in a broadband push·pull rf amplifier.
REFERENCE

1. B.

Ma x i mow, "Characteristics and Broadband
(225-400·MHz) Applications of the RCA 2N6104 and
2N6105 UHF Power Transistors," RCA Application Note
AN·6010, RCA Solid State Division, Somerville, NJ.,
May 1972.
ACKNOWLEDGMENT

The author is grateful to D.A. McClure and R. Risse of
RCA Communications Systems Division for their suggestion
of the use of a coaxial cable for push-pull amplifiers.

OOCIBLJD

RF Power Transistors

Solid State

Application Note
AN-6229

Division

Microwave Power-Transistor Reliability
as a Function of Current Density
and Junction Temperature
by s. Gottesfeld

Questions concerning the effect of electromigration·related
failure modes on the life of microwave power transistors using
an aluminum metallization system are frequently asked. This
Note answers these questions as they pertain to RCA microwave
power transistors. First, the design aspects of these transistors
which aid in reducing the incidence of electromigration failure
to a negligible level under normal operating conditions are dis·
cussed. Second, supporting life·test data on commercial·level
RCA microwave power transistors is presented. The lifetime
of the products in this line can be predicted from the data as a
function of current density and junction temperature - the
two main factors involved in electromigration failure modes.

of device are separated into many discrete sites which are paral·
leled for high·power performance. The overlay configuration
provides the high ratio of effective emitter periphery to base
area3 needed for high·power generation at microwave fre·
quencies. In addition, this structure has the advantage of
permitting lower current densities in the emitter metal·
lizing stripes than other high·frequency structures. This
advantage results from the relatively broad emitter·metal
stripes which interconnect the discrete emitters. These
stripes are typically 3S microns wide compared to 3 to S
microns for other interdigitated or matrix designs. Further·
more, the separation of the emitter· and base·metal fmgers
is 3 to 4 times greater in the overlay structure than competitive
structures. This separation permits the deposition of thicker
metal layers with greater cross-sectional areas; and further

Eleetromigration
Electromigration of the aluminum in the presence of high·
current densities and elevated temperatures is well known l and
reduces current densities.
results from the mass transport of metal by momentum ex·
change between thermally activated metal ions and con·
ducting electrons. As a consequence, the original uniform alumi·
Polvcrystalline Silicon Laver (PSL)
num film reconstructs to form thin conductor regions and ex·
Another advantage of the overlay transistor structure with its
truded.appearing hillocks that may cause device degradation.
broad emitter fingers and non·critical metal·definition is that
The electromigration process can be accompanied by the
it is readily adaptable to the introdU'ction of additional con·
dissolution of silicon into the aluminum. This dissolution ducting and insulating layers between the aluminum metal·
usually occurs during heat treatments employed in transistor lization and the shallow diffused emitter sites required for
manufacturing until the aluminum·silicon saturation point is microwave performance. RCA has developed a polycrystalline
reached. Therefore, little silicon can dissolve when the device silicon layer (PSL), shown in Fig.!, which is deposited over the
is in normal operation. At high·current densities and elevated emitter sites and under the aluminum metallization. The PSL
temperatures, 'however, the silicon ions which were diffused . forms a barrier between the aluminum emitter finger and the
into the aluminum during the manufacturing process can oxide insulating layer over the base; the barrier minimizes
be transported along with the aluminum ions undergoing . failures caused by the interaction of aluminum with silicon
electromigration away from the silicon·aluminum interface dioxide. In addition, the PSL layer helps to minimize therand into the aluminum. This situation allows further diffusion
mally induced failure modes by providing a barrier between
of silicon' into the aluminum and leads to the eventual failure
the aluminum and the shallow-emitter. diffused region to
of the transistor junctions2,
prevent "alloy spike" failures; PSL also increases the distance
that the silicon ions must travel from emitter·site region to
RELIABILITY DESIGN FEATURES
metallization, Fig.l. Therefore, the amount of silicon that can
Overlay-Transistor Construction
be diffused into the aluminum is limited, and the possibility of
The basic transistor construction used by RCA for rf power
device failure as a result of the electromigration of the silicon
transistors is the "overlay" design. The emitters in this type
in the aluminum is reduced.
'11-73

471

AN~229

_____________________________________________________________

gigahertz chain of microwave power devices are also siteballasted, and are also rated at a 10:1 VSWR capacity.

Glass-Passivated-Aluminum Metallization

Fig. 1 - Cross section of an oller/ay transistor showing the polysilicon
layer (PSL) between the metallization and emitter sites, and
how emitter ballasting may be placed in series with each emitter site by controlling the doping and contacting geometry of

thePSL.

The standard metallization system used on all commercial
RCA microwave power transistors consists of an evaporated
aluminum-silicon film which is defined by means of photolithographic and chemical-etching techniques. The addition
of silicon to the aluminum brings the state of the metallization closer to the aluminum-silicon saturation point and
retards the electromigration of silicon into the aluminum.
Aluminum electromigration is also significantly retarded by
the depOsition of a glass passivation layer over the aluminum
flim subsequent to the definition procedure" It has been
shown1 that the use of glass passivation results in a 40-percent
increase in the activation energy required before electromigration can begin. The silicon-dioxide layer also protects the
aluminum from contamination and from scratches or smears
that may occur during device assembly.

Emitter.site Ballasting

RCA has utilized the PSL technology as a medium to introduce emitter-site ballasting into its microwave power tran·
sistors. Emitter-site ballasting permits more uniform injection across the transistor chips by reducing hot-spotting. By
controlling the resistivity of the PSL and restricting the con·
tacting geometry of the aluminum to the PSL layer, a ballast
resistor is placed in series with each emitter site, as shown in
Fig.!. These resistors function as negative.feedback elements
to control that portion of the transistor that is drawing excessive current. Since the overlay construction results in an
emitter thatis segmented into many sites which are connected
in parallel, each hot-spot may be isolated and controlled.
Furthermore, the large number of resistors in parallel mini·
mize the effects of excessive emitter' resistance on input impedance and gain. In fact, one microwave transistor, the
type 2N5921, which had low levels of emitter-site ballasting
added to its structure, exhibited a 35·percent improvement in
power output for the same drive level. At the same time, the
measurement of the de safe-operating area, as defined by a
2000C hot-spot junction temperature (infrared measurement),
indicated an approximate doubling of the allowable current at
15 volts (see Fig.2).

OPERATING-LIFE-TEST PROGRAM
Test Conditions

An accelerated operating-life-test program was undertaken to
study the effects of electromigration at various current densities on the lifetime of RCA microwave power transistors.
DC current-voltage conditions were used since electromigration is responsive to the dc components of the total waveform used in rf applications, i.e., electromigration is effected
by the unidirectional components of the field. Tests were run
at three different emitter-stripe current densities (IE) with each
current density in turn run at three different peak junction temperatures (Tj); all tests represented stress levels above normal-

'"i:!

2

TC=IOO·C

,.
:i
"-' 1000
.oJ

TJ=200·C

~

;;
I

U

~\

8

1'V

6

.\

!:!
It is also known that hot-spotting under rf conditions increases as the VSWR increases4. Device failures which occur
under high VSWR conditions at the output are often related.
to a forward-bias second-breakdown failure mechanism which
is characterized by extremely high localized currents. Thus, it
could be expected that an emitter-ballasted transistor would
have greater resistance to failure under high VSWR conditions,
such as those encountered in some broadband amplifiers. In
fact, the 2-gigahertz power transistors which are site-ballasted,
types 2N6265 and 2N6266, have been characterized for their
ability to withstand =: 1 VSWR at all phases at rated power;
the 2N6267 has been characterized at a 10: 1 VSWR. The 3-

472

IZ

I~ITE

'"g;

I<

u

I<

o

2

I-

rrr

U

j
8
2

4

8

BALLASTED

E
\\\

10

6

8 100

COLLECTOR-BASE VOLTAGE (VeBI-VOLTS

Fig.2 - DC infrared safe-ars for ballasted and unballasted microwave
transistor (2N5921 COIIx;a' packaged).

___________________________________________________________

AN~229

400

use conditions. Peak junction temperature was determined by
infrared scanning of the transistor pellet at each life· test
condition. Table I shows the matrix of test conditions. The
sample size per test condition ranged between 10 and 15
units. A total of 114 units were tested.

350

,

300
250

1"

200

~
01.

150

4 ....c"" ...

·/·l'.1t(IO.s

1E'·.e')'+/Q

TABLE I - ACCELERATED LlFE·TEST CONDITIONS

4/(,'71"-

..,....c"' ...

Collector

Emitter

Curront
(Amperes)

Current
(Amperes)

1.02
2.07
3.22

Emitter Stripe
Peak Junction Temperature*
(DC I
Current Densitv
2
(A/cm 1
Tj1
Tj2
Tj3

8.5 x 104
1.7 x lOS
2.7 x lOS

300
283
300

280
258
273

2S4
230
240

* Represents peak temperature as averaged over several devices at each
life-test condition. External heat-sink size was adjusted to achieve
the differences in junction temperature on the life test.

10

°
°
5

2102

468 10 2'

46111032

468 104 2

468105 2

468 106 2

468 107 2

4 68 r08

MEDIAN TIME TO FAILURE -HOURS

Fig.3 - Arrhenius plot showing extrapolation to lower temperatures
from the life-test MTF points for the 2N6267.

Test Vehicle

A type 2N6267 device manufactured by RCA was used as the
test vehicle because it operates at one of the highest current
densities in the microwave family. This device incorporates
all the design features described in the prior sections of this
Note, and is considered representitive of the microwave
family. All the transistors used on test were commercial·
level devices, i.e., they were not subjected to conventional
hi·rel screening prior to life testing.
Failure Mode
The accelerated test conditions produced failures due to
electromigration of aluminum and silicon as described in the
introductory section. The failure indicator was degraded or
shorted transistor junctions. RF power output measured
at frequent life-test down-periods prior to device junction
failure exhibited only slight degradation (typically 8 percent);
this performance is excellent considering the severity of the
test conditions.

Data

An Arrhenius plot (1fT, log scale) of the log-normal mediantime· to-failure (MTF) obtained from each test is shown in
Fig.3. The curves are extrapolated down from the data points
to enable prediction of MTF at operating junction temperatures below the maximum rated 2000 C. An estimated
MTF of 9.5 x lOS hours (or greater than 100 years) is predicted for the 2N6267 device under test at its typicalapplication current density of 8.5 x 104 A/cm2 and junction
temperature of 1500C.

,o'+-,o';--!''--!-'-1,-1,,1'0-:-'-,!--l.+,,!,j,of.;;,---l-,-:.hl-,.J.,-I-,o',..j,.--!-.-l,-!,+,o-=-'--!,~.J-.--!,,.!.I8108
MEDIAN TIME TO FAILURE (HOURS)

Fig.4 - MTF as a function of current density and junction tern·
perature. In applying this chart, it is recommended that
no device be used above its maximum ratings as specified
in the published data sheet.

Points from each curve in the Arrhenius plot were taken in
the temperature range of 200 0C to 1000C and replotted on a
log-log scale, Fig.4, for extrapolation over various current den-

sities. Fig.4 shows the general plot of MTF as a function of
emitter-current density and peak·junction temperature. This
chart can be used to estimate the MTF for each microwave
transistor at its typical operating-current density. Table II lists
the transistor types currently in the microwave family, and
shows the predicted MTF for typical·application values of
emitter current, emitter-stripe current density, and peak

junction temperature.

473

AN-6229

TABLE 11- ESTIMATED MTF FOR MICROWAVE FAMILY
AT TYPICAL·APPLICATION CURRENT DENSITIES
Operating
Package

Frequencv

Estimated

MTF (106 hoursl

JE(104A/cm21

@Tj=150D C

2N5470

0.119

5.2

0.180

5.5

3.5

2N5921

0.450

3.5

12.0

2

2N6265

0.215

6.5

2.0

2

2N6266

0.540

4.2

7.0

2N6267

1.02

8.5

0.95

2.3

2N6268

0.275

8.3

1.0

2.3

2N6269

0.920

7.2

1.5
0.80

HF·21 Coaxial

Hf'-46 Stripline

IE (Amperesl

2N5920

HF-ll Coaxial

HF·28 Striplin.

Typical Operating
Conditions

Type

(GHzl

2

4.0

RCA2003

0.300

9.0

RCA2005

0.540

4.2

7.0

RCA2010

1.02

8.5

0.95

RCA3001

0.120

3.8

RCA3003

0.300

9.0

0.80

RCA3005

0.540

8.0

1.1

CONCLUSIONS

10.0

ACKNOWLEDGMENT

The life·test data presented in this Note shows that the
design features of RCA microwave.power transistors assure
.reliable operation at the current densities and junction tern·
peratures normally encountered in typical applications. Under
these operating conditions, the lifetime of these devices in
terms offailure due to electromigration is estimated at approxi·
mately 100 years.

The author acknowledges the assistance of D. S. Jacobson

ill providing information concerning the transistor design
descriptions, C. B. Leuthauser in providing microwave·tran .
sistor application information, and L. J. Gallace for his com·
ments regarding the reliability aspects of this Application Note.

REFERENCES
1. J. R. Black, "Electromigration Failure Modes in Aluminum

Metallization for Semiconductor Devices," Proc. IEEE,
Vol. 57, pp. 1587-1594, September 1969.
2. J. R. Black,"RF Power Transistor Metallization Failure,"
IEEE Trans. Electron Devices, Vol. ED·17,No. 9, pp. 800803, September 1970.
3. D. S. Jacobson, "What are the Trade·Offs in RF Transistor
Design?," Microwaves, Vol. II, No.7, July 1972.
4. C. B. Leuthauser,"Hotspotting in RF Power Transistors,"
RCA Application Note AN4774.

For basic transistor theory. circuits, and application information,
refer to "RCA Solid State Power Circuits Designer's Handbook".
SP-52. or "RCA Transistor, Thyristor, &: Diode Manual", SC-1S.

474

D\1CrBLJD

RF Power Transistors

Solid State
Division

Application Note
AN-6291
Microwave Transistor Oscillators

by G. Hodowanec
INTRODUCTION

Bipolar transistor oscillators have now become important
components in many present day commercial communications
and test systems as well as the more highly specialized military
systems. These transistor sources, which feature low residual
FM noise, very good frequency stability, and a capability for
voltage tuning and phase locking, are currently available in a
wide range of options from a growing number of suppliers.
Sources are available as fundamental oscillators, frequency
doublers, and as frequency multipliers. Power outputs range
from the milliwatt levels needed for fixed·tuned or broadband
local oscillators used in receiver or test systems to the much
higher power levels (order of watts) needed in the commercial
telecommunications and specialized military systems. While
transistors are now available for use as fundamental oscillators
at about 12 GHzI, frequency-doublers or multipliers are
generally used with lower frequency devices to achieve source
power at the higher frequencies. Transistor sources in the Land S-band frequency range are competitive in cost and
performance with most other sources generally available in this
frequency range. While IMPATI and TRAPATI diode oscillators can also develop adequate powers in this frequency
range, the .diodes generally require much higher bias voltages
and are also less efficient. The noise performance of the diodes
is also poorer, especially in the free-running modes. The
higher-efficiency TRAPATI mode requires more critical
circuitry compared to bipolar oscillators. Bipolar oscillators

RLOAD

are also. less sensitive to spurious modes than the diode
oscillators. In addition, bipolar devices are rapidly developing a
history of high reliability in this frequency range. Therefore,
emphasis in this Note is placed on current L-· and S-band
transistor oscillator techniques.
TRANSISTOR OSCILLATOR BASICS

At microwave frequencies, the most effective transistor
configuration for an amplifier is the common-base mode of
operation. This configuration provides higher gains,
efficiencies, and stability at higher frequencies (frequencies
above the transistor fT) then the other possible configurations.
Since an oscillator may be considered as a regenerative
feedback amplifier (or a negative conductance amplifier), these
conditions also apply to the oscillator mode under welldesigned conditions.
The basic microwave oscillator circuit considered here is
Shown in block diagram form in Fig. I(a). Requirements
similar to a power amplifier are seen. In each case, the
transistor must provide gain at the desired operating frequency
under matched input and output conditions. The main
difference is that the oscillator must include a feedback
network that couples a portion of the output power back to
the input circuit in the proper phase and level to sustain
oscillations. The oscillator power delivered to the load is the
equivalent amplifier power output less the amount of power
fed back to the input circuit and any losses in the feedback

,,~, "@' ,~L
COLPITTS

HARTLEY

CLAPP

(al

Ibl

~)

92CS-20!l96

a. common-base feedback oscillator

b. common-base oscillator configurations

Fig. 1 - Basic requirements for 2-bipolar transistor oscillarar.

9-74

475

AN-6291 __________________________________________________________

network. The feedback network can be an external loop, an
from collector-base to the emitter-base circuits utilizing the
internal loop, or a combination of internal and external
parasitic capacitances CCE and CEB.
The circuit of Fig. 2(a) is readily adaptable to voltage
elements. Although many variations of the feedback networks
are possible, the three general variants shown in Fig. I (b) have
tuning. Tuning capacitor C I may be replaced with a proper
varactor diode including the necessary bias feed and isolation .
been found to be also effective at microwave frequencies.
Tuning range of one octave (i.e., 1-2 GHz) is obtainable with
The Hartley circuit utilizes a tapped-inductor in the output
tuned network to provide the correct level and phase of the
tuning voltages in the order of 0-25 volts. Inductors LI and L2
feedback to the input circuit. The Colpitts circuit makes use of can be a low-loss strap type in this frequency range. Proper
choice of these elements enables matching over this entire
a tapped-capacitor in the output tuned circuit to provide the
frequency range.
correct feedback. The Clapp circuit is but a high-stability
·.The circuit of Fig. 2(a) can also be adapted to push-push
version of the Colpitts circuit. In each case, the frequency of
oscillation is established by the output tuned circuit which
doubler service as shown in Fig. 2(b). In this mode, two
oscillators are operated 1800 out of phase (phased by
must also incorporate the feedback network as an integral part
capacitor C) in the input circuits while the outputs are
of this network.
A closer examination of Fig. I(a) also indicates that the . essentially paralleled. The output frequency is doubled by the
frequency determining portion of the oscillator can be· "doubling action" depicted in Fig. 2(b) while maintaining the
separated from the output matching network by placement of power levels and collector efficiencies of the fundamental
mode. Other variations of this technique are also possible.
a high-Q LC .resonant network in the collector-to-emitter
Such techniques can make the 1-2-GHz oscillator into a
feedback network, the input matching network, or the
2-4-GHz oscillator without need for a higher frequency device .
.common base-to-ground circuit. The output network can then
be designed from large-signal amplifier load conditions, while
Use of higher frequency devices, of course, can extend
the feedback network can be treated essentially independoperation to even higher frequencies. As with the single
oscillator, voltage tuning can also be incorporated here.
ently. This technique is especially suitable for the simplified
design of stable, high-power transistor oscillator circuits.2
Voltage-tuned (i.e., varactor-tuned) sources are, in general, low
cost and have reasonably low FM noise. However, harmonic
LUMfED-CONSTANT OSCILLATORS
content (even order) is high unless further output filtering
A typical Colpitts type oscillator circuit using lumped- (band-pass type) is used.
constant circuit elements is shown in Fig. 2(a). As seen in the
The simple transistor oscillator shown in Fig. 2(a) can be
directly multiplied to higher multiples using the nonlinear
"equivalent circuit" shown, it is also of the Qapp type. Using
output capacitance of the device as a varactor element, or if
the RCA 40836 transistor, this circuit can develop a power
output of 0.6 watts at 2.0 GHz and has an overall efficiency of perferred, an external varactor element may be used. 3 More
commonly today, transistor multipliers couple the fundamen20-25 percent when operated from a 21-volt supply. No
tal output of the transistor through a low-pass impedance
external feedback elements are required. The feedback
transformer t~ a step-recovery-diode (SRD).4 An output
required to sustain oscillations is provided by the parasitic
bandpass filter matches the SRD to the load and also serves to
capacitances of the package housing the 40836 device. The
collector of the transistor is grounded and thus appears, at first
short circuit (circulate) all harmonics other than the desired
glance, to be connected in the common-collector mode.
output frequency. Thereforo, harmonic suppression is good
However, the collector was grounded to improve collector heat
(order of 50 dB) but residual noise in the fundamental
dissipation and to reduce the collector-base loop inductance.
oscillator is multiplied by the SRD. Such circuits 'can make
The circuit still operates common-base since the feedback is
extre'11ely low-cost high-frequency sources.

R2

R'

RFe

l~
RFe

.~~J

R.

R.

RFe

OUTPUT

EQUIVALENT CIRCUIT

PEAIOO-

R'

DOUBLING ACTION
9ZCS-23976

a. typical Colpitts oscillator of the Clapp type

-Vee

92CS-23977

b. push-push version of oscillator fa}

Fig. 2 - Typicallumped.cotl$tant microwave oscillators.

476

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-6291

devices as measured in a 3-kHz slot (based on a 200 kHz rms
deviation reference) for baseband frequencies of 70 kHz to 5
MHz.s The noise ratios are plotted also as a function of the
relative base output impedances, giving an indication that the
noise performance is a strong function of the cavity loaded Q.
In this case, the higher powered device, the RCA 40909, has
appreciably better noise performance than the RCA 40837
device, since the loaded Q's are approximately 15 and 5,
respectively.
Voltage-tuning of the coaxial-cavity type oscillators are
possible,_ but somewhat more complicated than the simpler
lumped-constant circuits discussed previously. The same
general techniques shown above may also be applied to
microstripline, rectangular-coaxial, or slabline circuits as well.

CAVITY-TYPE OSCILLATORS

Microwave cavity oscillators are generally used where high
spectral purity and good frequency stability are required. The
frequency-controlling element is a high-Q cavity (which is
sometimes made of lNV AR) to provide frequency stabilities of
about ±0.05 percent over a wide temperature range. Typical
coaxial-cavity circuits are shown in Fig. 3(a). Most cavities are
of the fore-shortened quarter-wave coaxial-line type with the
characteristic impedance in the order of 72 ohms. Mechanical
tuning is possible with a movable probe at the capacitive end
of the cavity. Power output is taken either from a capacitive
probe or an inductive loop suitably positioned within the
cavity.
-Vee

t,~
~~~~,

-VEE

RFe

~
R.

~Tur
~rziiNrNG

Rr

~T~NrNG
~d

"' __
J

IZZ2I

2:ZZ:Z:850_0HM

92CS-23979

(1) grounded..IJase version
(2) grounded-collector version
a. typical cavity oscillators

92CS-239S0

b. typical FM noise performance for oscillator (2).

Fig. 3 - Coaxiai"l:avity microwave oscillatoTS.

Two oscillator versions are shown in Fig. 3. The grounded-

base version, either directly grounded as shown in (I) or
RF-grounded with a bypass capacitance (to utilize a single bias
supply) generally requires a device with sufficient internal
feedback to perform efficiently. The grounded-collector
version shown in (2) has proven to be much more efficient,
not only due to the effective heat sinking of the collector, but
also to the fact that the feedback mechanism is now an
integral part of the microwave cavity.
In these oscillators, the device impedance appears in series
with the low impedance end of the cavity and thus directly
affects the oscillator loaded Q. The loaded Q directly affects
the oscillator output FM noise spectrum. Shown in Fig. 3(b)
are typical signal-to-noise ratios for RCA coaxial transistor

Microwave oscillators which are possible in lumped-constant
form are generally duplicable in microstrip form also. At the
higher frequencies, the microstrip form is preferred since the
micros trip equivalent elements are reasonable in both physical
size and also electrical losses. Shown in Fig. 4 is a typical
microstrip oscillator operating at about 4.35 GHz. This circuit
uses the RCA 41044 device which contains a 5-GHz chip
bonded in the common-collector configuration in a stripline
package. This bonding arrangement is used to improve the
collector heat dissipation and to reduce the collector-base loop
inductance.
Operation of the circuit of Fig. 4 is still in the common-base

50-OHM
OUTPUT

RFe

eZJ~

R.
RI

-Vee

MICROSTRIP OSCILLATORS

RZ

·e M : AIR-DIELECTRIC,PISTON-TUNED
CAPACITOR (RESONANCE >5 GHzl
92CS-23974

Fig. 4 - 4.35-GHz microstrip oscillator.

477

AN-6291 ______________________________________----------------------mode. The oscillation frequency is primarily established by
resonating the collector-to-emitter feedback capacitance with
an inductive sfub element X I. The output circuit is matched
with an in·line impedance transformer X2, with capacitor "C"
providing for fine tuning and dc isolation for this network.
The output network must be properly centered in frequency
in this case if it is not to have strong frequency pulling effects
on the oscillating frequency which should be primarily
established by stub section X I.
The RCA 41044 in this circuit typically develops about 400
mW of output power at 4.35 GHz with an overall efficiency of
15-20 percent when a 20-volt bias supply is used.
HIGH-POWER OSCILLATORS

There is a need for higher-power signal sources in specialized
applications where the requirements for extreme stability or
very low noise are not really necessary. Such oscillators can be
readily designed using simplified large-signal design
techniques2 and can approach the large-Signal power output
and efficiency performance of the parent amplifier design.
Fig. 5(a) shows a simple 1.68-GHz oscillator suitable for
50-OHM
OUTPUT

HYBRID THIN-FILM MICROWAVE OSCILLATORS

Microwave-integrated circuits (thin-film) form a large
portion of present-day microwave circuitry. Hybrid thin-film
techniques are well established and can also be readily applied
to microwave oscillators. Hybrid oscillators, using packaged
bipolar transistors (which have correct parasitic capacitances),
are easily incorporated into thin-film circuitry. The present
trend, however, is to use transistor "chips" bonded into
thin-film circuitry, since reduced costs and further circuit
miniaturization is now possible.
Shown in Fig. 6 is a typical hybrid thin-film oscillator
circuit. Coupled-lines, X2 and X3, are used in the output to
establish the resonant frequency and the output match. The
circuit is of the Colpitts type with feedback from the output
to the emitter base being established by the collector-emitter
capacitance formed by stub section X I and the emitter-base
capacitance formed by the fringing fields between stub
sections X I and X2. Since there is very little coupling across a
transistor "chip", it is necessary to resort to some sort of
external coupling methods as indicated in this example.

!'" ..

RFC

" ..
I
,p
2.5 50

7.6
2

R.

.0

I.' 30

100

,.•7. f----;b,.-''''f--+--j---I-I

+Vcc
CI : 0.4- 6.0 pF, AIR-DIELECTRIC, PISTONTUNED CAPACITOR
C2 : 30 pF, ATC - lOa, OR EQUIVALENT

I

20

0.5

'0

1.675 ''-.--:'20'''--2'="2--21..'--2'''.''---:'-:-' 0

2.

Vee

0

-VOLTS
92CS-23915

S2CS-23913

a. 1.68-GHz radiosonde oscillator

b. performance of oscillator (a)

Fig. 5 - Typical high-power microwave oscillator.

radiosonde service. This circuit, which uses the RCA 41025
device, is an example of a circuit in which a high.Q frequency
determining network is placed in the base·to·ground circuit.
Capacitor C1 series resonates the common·base inductance at
the operating frequency. The base is effectively at RF ground
at this frequency only. At 1.68 GHz, the collector load of the
41025 transistor is effectively about 5.5 ohms real. A simple
5.5-ohm to 50·ohm tapered·line output matching trans·
former, using the methods of Womack,6 is used to keep the
output network broadband in response and to keep second
harmonic output more than 40 dB down. Package parasitics
provide the correct level of capacitive feedback over the range
of about 1.4 GHz to 1.8 GHz. This is also the effective tuning
range of capacitor C I.
Performance of this oscillator at the 1.68·GHz radiosonde
frequency is given in Fig. 5(b). It is to be noted that the
frequency remains essentially constant over a range of supply
voltages of 20 to 28 volts. The overall circuit efficiency
remains essentially constant over the range of 24 to 28 volts.
The rapid falloff in power and efficiency at theJower voltages
can be corrected with the redesign of the output network for
the collector loads developed at these lower voltages.

478

-Vee

".
50-OHM

~====~-J~UT

Fig. 6 - Typical hybrid thin-film microwave oscillator.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-6291

RCA has refined and extended these techniques in the
development of a hybrid thin-film radiosonde oscillator. 7 This
oscillator, the type S2S4, delivers a minimum of SO mW over
the 1600 -1700-MHzrange. It can maintain a 4-MHz frequency
stability throughout a JO-volt change in input voltage (from
30V'to 20V) and over the _70 0 to +700 C temperature range.
The frequency of this oscillator has been stabilized with the
incorporation of an additional high-Q resonator which is seen
in the photograph of this oscillator (Fig. 7).

reliable and cost competitive in this frequency range. Highly
efficient operation at low bias voltages in relatively simple and
easily understood circuitry is probably the greatest advantage
of bipolar devices over negative resistance diode devices in the
range of VHF through X-band. Therefore, it is concluded that
bipolar transistor oscillators will continue to dominate this
frequency range for many years to come.

REFERENCES

I. Chen, P.T., In!'l Sol St Circ Conf, Phila. 1974.

2. RCA Application Note, AN-6084, "High Power Microwave
Transistor Oscillators".
3. RCA Technical Series, SP-S2, "Frequency Multipliers," pp
550-562.
.
4. Hall, R., "Step-Recovery Diodes Add Snap to Frequency
Multiplication," Microwaves, Sept 1965, pp 70-75.
S. Hall J. A., G. E. Corp. Lynchburg, Va., Private Communication.

6. Womack, C. P., "The Use of Exponential Transmission
Lines in Microwave Components," IEEE Trans on MIT, Vol
MTT-lI, Mar 1962.
7. Askew, R., "Hybrid Thin-Film Radiosonde," Elec Components Conf. Washington, DC, 1971.
Fig. 7 - Prototype of hybrid thin·film radiosonde oscillator.

CONCLUSIONS

ACKNOWLEDGMENT

. Bipolar transistor oscillators are used extensively in applications from the VHF frequency range to X-band.' Power
outputs from milliwatts to several watts are available with a
wide range of options in terms of tuning range, stability, noise
performance, and flexibility. Bipolar transistor oscillators are

The author wishes to thank J. Walsh for the fabrication and
evaluation of the 4.3S·GHz microstrip oscillator and R. Askew
for data and photographs on the hybrid thin-film radiosonde
oscillator. This Note originally appeared as an article of the
same title in THE MICROWAVE JOURNAL.

When incorporating RCA Solid State Devices In equipment, it is
recommended that the designer refer to "Operating Considerations for
RCA Solid State Devices", Form No.1 CE·402. available on request
from RCA Solid State DiviSion, Box 3200, Somerville, N.J. 08876.

479

OOCTI3L7D

RF Power Transistors

Solid State
Division

Application Note
AN-6307
Microwave Amplifiers and Oscillators
Using RCA3000-Series Transistors
by G. Hodowanec

This Note describes several experimental microstripline
circuits which employ RCA300 I, RCA3003, or RCA300S
transistors at frequencies of 1.7 to 2.7 GHz.l The
RCA3000·series transistors are emitter·ballasted, silicon,
n-p:n devices packaged in the hermetic stripline package
(HF46) shown in Fig. I. They are designed for use in

simplicity in design and good performance in the frequency
range of interest. Therefore, the circuits and design
approaches discussed should be considered primarily as
guidance for the circuit designer and not necessarily as
optimum designs.
RCA3001 Circuits

The RCA3001 transistor is intended for low·level pre·
driver or oscillator applications and is capable of about 1.3
watts of saturated power output at 3 GHz and 2 watts at 2
GHz when operated with a 28-volt collector supply. The
low input and output Q's for this device in the range of 1.7
to approximately 2.7 GHz facilites its application in
broadband circuits operating over this frequency range.
With the techniques shown, the broadband performance
approaches the narrowband performance obtainable from
this device.
Fig. 1 - Hermetic strip/ine package, HF-46, housing the RCA3000-

series transistors.

microwave communications, telemetry, relay links, transponders, and radionavigation or radiolocation systems
which operate in the frequency range of approximately 1.7
to 3.2 GHz. These transistors, which are employed
primarily in the common-base mode of operation, are
suitable for small·signal class A and large.signal class B or C
cw or pulsed applications in stripline, microstripline, or
lumped-constant circuits.
The hermetic stripline package which houses the
transistors has relatively low parasitic capacitances and
inductances, characteristics which afford stable operation in
the common-base mode. In general, microstrip circuit
elements are used in the circuits described, and the
unavoidable package parasitics are incorporated into the
matching networks to yield good performance with
reasonable operating bandwidths. Although there are many
ways of designing matching networks, this Note emphasizes
only a few methods which have demonstrated both

Amplifier Designs

The input impedance of the RCA3001 transistor can be
matched over the range of about 1.7 to 2.6 GHz with better
than I ·dB gain flatness using relatively simple input·circuit
networks. Two circuit approaches are considered: an
in·line tapered-line transformer based upon the methods of
Womack 2 , and a more conventional two·step network
which also shows broadband capability.
TAPERED·LINE DESIGN

Fig. 2 shows an RCA3001 transistor in a circuit con·
structed on a 1/32·inch Teflon-fiberglass circuit board. The
circuit is composed of a broadband tapered-line input
transformer and an output matching network consisting of
a conventional single.step uniform-line matching
transformer.3 The circuit is designed to operate at a center
frequency of 2.3 GHz with fixed input drive and a 28·volt
collector supply. The typical performance of, the input

9-74

480

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-6307
RCA 3003

R,

+

VCC

CI,C2 : IOpF, ATC-IOO,OR EQUIVALENT
C3,C4 : FILTER CON, A-B SMF B-AI, OR EQUIVALENT
Re
; O.24.n
RFC
: 0.70 INCH LENTH #32 WIRE (LAY FLAT ON CIRCUIT BOARD)
LINE-SECTION DETAILS: 1/32 INCH TEFLON- FIBERGLASS
DIMENSIONS IN INCHES (AND MILLIMETERS)

~
.e.lrrrrrn11
-.l

>:g

0.OB5
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0.38

)f-LLLLLLLIL 19.65)

P777TT1]

---.l

0.42

kL.L.LLLLJ (10.67)

L 0.90_J!

0.45...1 1

(lL43)

(22.86)

92CS-20058

Fig.2 - 2.3 GHz tapered·line (broadband input) circuit using the
RCA3001 transistor.

network is determined by optimally matching the output
network over a wide frequency range by use of a triple-stub
tuner section.
The performance of the input circuit is shown by the
solid curves in Fig. 3. The data indicates the potential I-dB
~50r----r----~---r----~--~----.----.----,

I 40F===*===~==~~~--_+--~----~~

§30~--_+----+_--_+--~~,~,--+_~-~~,~~--4_------~
>,.-,,.........
ffi 20~--_+----+=~_f~--+_--_+----+_~~,~--~
~

10

~--_+----+_--_+----+_--_+----+_--__+-'-'..::'''_J

i!;

bandwidth of the input circuit to be greater than 800 MHz.
The power output and collector efficiency are relatively
constant in the range of about 1.8 to 2.4 GHz; therefore,
approximately 1.3 to 1.5 watts of output power with an 8to 9-dB power gain and a collector efficiency in the order
of 40 percent can be expected from these devices in this
frequency range. The performance of the uniform·line
output transformer is given by the dashed curves of Fig. 3.
The narrower bandwidth of the uniform-line matching
section is obvious in this plot, the I-dB bandwidth now
being in the order of 175 MHz. The overall performance of
the circuit of Fig. 2 is similar to that of the dashed-line
curves of Fig. 3 since the circuit performance is limited by
the narrow-band filter characteristics of the output
network.
While the circuit shown in Fig. 2 is intended for
operation at 2.3 GHz, it can be operated anywhere in the
range of 1.7 to 2.6 GHz (without changing the input
network design) simply by redesigning the output network
for the new frequency range. Performance of the circuit of
Fig. 2 with the collector supply at 22 volts is given in Fig.
4. Slight circuit modifications to better match the 22·volt
impedances will improve this performance.

0

0
0

,,-

-

,

0

--

-

---..

0
0
0

z

g
'""'~

6~--_+----t_~~~,-'-'_+----+_--_+-'~,~~--__+

....'

- .... , - !---

-- --

8
S

....

4
2~--_+----t_--_+----t_--_+----+_--__+----~

2
0

2.5il---...J.----4_--__+----4_--__+----+----~--_I
VCC=2BV
Re ",on
2.0

2.5

PIN = 0.2 W

z.0

VCC=22V
Re- on
P,N =O.2W

5
INPUT RESPONSE
".

0

".

".

--

..........
....,

<"!

OUTPUi RESPOtE

0.51-----+----'.t_--_+----t_---+----+--_+~=,-~~

°1.'o8----;1.'o9----;;2J,..0----;;2J,.I----;;2J,..2----;;2J".3~--;;2,l,.4,----,2,1,.5:-----,2'I.S
FREQUENCY -

GHz

Fig.3 - Performance of the'circuit of Fig. 2 with

92CS-25059

Vee = 28 V.

·5

o 1.8

1.9

2.0

2.1

2.2
2.3
FREQUENCY-GHz

,
----

2.4

FigA - Performance of the circuit of Fig. 2 with

2.5
2.6
92CS·25060

Vee = 22 V.

481

AN~307

__________________________________________________________

TWO-STEP NETWORK DESIGN

.. 60
Iso

Fig. 5 shows an RCA3001 transistor in a circuit that uses
a two-step network to achieve broadband performance at

]. 4 0

50n

c1

OUTPUT

~
~
~

I--~

20
0

... r--

C2

:FILTERCON, A-B SMF 8-AI, OR EQUIVALENT

'l

~

~:;~;zz?~1

~

L

117.18)

(l3:~~1

LO.075
(1.91)

020

"

~~

0

--- - ,
...

~"'~3

GHz OUTPUT
RESPONSE

o.S

I

I

2.1

2.2

,..

-

~

",/

,..-1.5 GH-; ......

'-..,

~~~~g~SE

X2

TL

0.53

0

JL0.Q75

I.'

2.0

lb) 2.3 GHz OUTPUT

2.4

2.3

Fig.6 - Performance of the circuits of Fig. 5 with

"....

.... ....

2.

2.5

FREQUENCY-GHz

(1.911

03.46)

....

•

2•

92CS-25062

Vce = 28 v.

92CS-250f:!

. FiiJ.5 - 2.5 GHz (two~tep input) circuit using the RCA3001

transistor.

the input to the device. A capacitive stub section is used to
tune out the inductive reactance of the input impedance,
and the resulting real impedance is transformed to the
50-ohm source impedance with a quarter-wave matching
section. Although this circuit is constructed on 10-mil
Teflon-fiberglass circuit board to better define the stub
sections, it can also be constructed on 1/32-inch board.
The performance of the two-step input network under
"tuned" output conditions is given by the solid curves of
Fig. 6. The potential I-dB performance of this input design
is about 1.8 to 2.5 GHz. The original output circuit, shown
in Fig. 5(a), utilizes a tapered-line section designed for a
center frequency of 2.5 GHz. Performance of the output
circuit (and thus also the basic circuit) is given by the
dashed-line curves of Fig. 6.
The circuit performance at 2.5 GHz appeared to be
limited by the input response at this frequency. Therefore,
the output circuit was modified to a center frequency of
2.3 GHz, as shown in Fig. 5(b). Some additional inductive
reactance was needed at the output of the device to make
up for the additional electrical length needed to drop the
fIlter response approximately 200 MHz (utilizing the
original circuit-board length dimensions). Performance of
the revised output circuit is given by the dashed (long and
short) curves of Fig. 6, The I-dB bandwith is now
approximately 2.1 to 2.4 GHz. Power gain and collector

482

Re "on

/'

XL"~~
(~:08)

"

VCC· 28V

""-

o -.fIN" 0.2 W

.5

(a) 2.7 GHz CIRCUIT

L

2

i'..

;'

!NPUT RESPONSE

(lg:~~) IU~)~-.
'Lo J

-..t

...J L8:~Tf
0.70 -J .

-~

- :< -- ....

-

.'

...

2. 0

~

~

-X

2

4

RFC :0.70 INCH LENGTHiOI:32WIRE (LAY FLAT ON CIRCUIT BOARDI
LINE-SECTION DETAILS:IO-MIL TEFLON-FIBERGLASS
DIMENSIONS IN INCHES (AND MILLIMETERS)

......

0
8

: 5 pF, ATe-100, OR EQUIVALENT

... - ,
,~

0

•

CI

-

30

efficiency with this modification is slightly degraded,
probably as a result of losses in the series inductance added
to lower the output filter characteristics. The input VSWR
for both the tapered-line network and the two-step network
are typically less than 1.5: I in the I-dB bandwidth range.
Oscillator Design
Shown in Fig. 7 is an oscillator design that uses the
CI

C4

50n

10UTPUT

CI
:0.4 - 2.5pF, JOHANSON 7280, OR EQUIVALENT
C2,C3:FILTER CON, A-B SMF B-AI, OR EQUIVALENT
C4
: IOpF, ATC-IOO, OR EQUIVALENT
LI,L2: SEE TEXT
XI DETAILS: IO~MIL TEFLON-FIBERGLASS
DIMENSIONS IN INCHES(AND MILLIMETERS}

-.l

~O.375

~(9.531

lo.5o iT
U2.70r

92CS-25063

Fig.7 - 2- to 2.2-GHz oscillator circuit using the RCA3001
transistor.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ,AN-6307

RCA3001 device in a simple resonant-feedback-Ioop
circuit.4 With a 15-volt supply, better than I watt of
output power is developed over the range of 2 to 2.2 GHz
with the collector efficiency in the order of 50 percent. The
feedback network consists of inductors L I, L2 and
capacitor CI. Inductor LI is formed by bending the emitter
lead back over the top ceramic of the RCA3001 device;
inductor L2 is formed from a 0.20-inch length of collector
lead bent down to the output line-transformer section of
the circuit. Capacitor C I connects these two inductors
(from the end of LI to the center of L2) and is the tuning
element (fa) for this circuit. The output network consists
of a half portion of L2 and the uniform-line transformer,
X I. Capacitor C4 is selected so that it is self-resonant above
2.15 GHz, and thus serves as a dc block. The tuning range
of this circuit is limited by the feedback network as well as
the limited response of the uniform-line output transformer. The high collector efficiency is the direct result of
the efficient feedback system used in this oscillator design.

60

"50
I
g40
U

~

The RCA3003 transistor is intended for use in higherlevel driver stages and oscillator applications as well as in
applications with low-level output-device requirements.
This device is capable of approximately 3 watts of saturated
power output at 3 GHz and 4 watts at 2 GHz when
operated with a 28-volt collector supply. The relatively low
input and output Q's for this device permit reasonable
broadband operation in the range of 1.7 to 2.5 GHz.
Broadband performance in the circuits shown approaches
the narrowband performance obtainable under highly-tuned
conditions.
Amplifier Designs
The design approaches used in the experimental
RCA3003 circuits shown are similar to those used with the
RCA3001 devices. A design using' a tapered-line input
section and a uniform-line output section is shown in Fig.
8. Performance of this circuit is shown in Fig. 9. The

,.
50n

RCA 3001

.,
CI,C2 : IOpF, ATe-IOO, OR EQUIVALENT

C3,C4:FILTER CON, A-B SMF 8-AI, OR EQUIVALENT
RI
: EMITTER RESISTOR (CHOOSE FOR BEST EFFICIENCY (1)CI)
RFC
:0.70 INCH LENGTH#32 WIRE (LAY FLAT ON CIRCUIT BOARD)
LINE-SECTION DETAILS:U32 INCH TEFLON-FIBERGLASS

r--

........

"

10

o
10

... --, ,

.,"
.-

-

--

r--

....,

VCC· 28V
Re = .24.n
PIN =.7 W

.,

3

V

.,Ii'

Ili

....
".

/

~

a

/

2

.,,-

.-

I

RCA3003 Circuits

-

",,,,,,,

.,
., .-

~ 30
~ 20

""

-:-'" ~

""JTPUT .15::-r--

;'

I

o
I.S

1.9

2.0

2.1

2.2

FREQUENCY -

2.3

2.4

2.5

2.6

GHz
92CS-25065

Fig.9 - Performance of the circuit of Fig. 8.

potential I-dB bandwidth response of the input (center
frequency of 2.1 GHz) is about 1.7 to 2.4 GHz. or 700
MHz. The I-dB response of the output circuit is 1.95 to 2.2
. GHz, or 250 MHz. Power gain is about 7-dB and collector
efficiency is in the order of 40 percent for this frequency
range.
Fig. 10 shows a circuit originally designed for a center
frequency of 2.7 GHz. A two-step matching network was
used in the input and a tapered-line section in the output.
The output circuit was later modified to a center frequency
of 2.3 GHz. The performance of these circuits is shown in
Fig. II. The broadband response of the input network is
shown by the solid curves. Moreover, a I-dB bandwidth
greater than 400 MHz was obtained from the 2.3 GHz
circuit at both the 28-volt and 22-volt collector supply
levels. Response of the 2.3 GHz circuits is limited mainly
by the output filter characteristics, while the 2.7 GHz
circuit is also limited by the input response.
Oscillator Design

DIMENSIONS IN INCHES (AND MILLIMETERS)

0.OS5 X,
~.l61 -

P'7'777/1

I

--1

0.38
1~19.651

Lo.3S...!!
(9.65)

EXPONENTIAL TAPER
USED

~

-...1

V/'l/7I
0.35
~(B.B9)

ll.04
I!
(26.42~

92CS'25064

Fig.8 - 2.1-GHz circuit using the RCA3003 transistor (capered-

The oscillator design shown in Fig. 7 can also be used
with the RCA3003 device. With a 20-volt collector supply,
a power output in the order of 2.5 watts over the range of
1.9 to 2.1 GHz is obtained; the collector efficiency remains
in the order of 50 percent. Again, the tunable frequency
range is limited by the feedback-loop characteristics and the
narrow-band response of the output network.

line).

.483

AN-6307 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
50n

c1

OUTPUT

Cl

:5 pF, ATC-IOOtOR EQUIVALENT

C2

:FILTERCON, A-B SMF B-AI, OR EQUIVALENT

RFC :0.70 INCH LENGTH#32WIRE (LAY FLAT ON CIRCUIT BOARD)
LINE-SECTION DETAILS: la-MIL TEFLON- FIBERGLASS
DIMENSIONS IN INCHES {AND MILLIMETERS}

RCA3005 Circuits

The RCA3005 is intended for use in high-level driver
stages or as the output stage of an amplifier. This device is
capable of about 5 watts of saturated output power at 3
GHz and 7 watts at 2 GHz when operated with a 28-volt
collector supply. Because of the higher Q's for this device,
broadband operation generally requires a two-step matching
network, where the first step "tunes out" at least a portion
of the reactive terms of the device impedances.
Amplifier Designs

0.025

!l

~·H4) I

L
0.50

0.30

A two-step input network (similar to those used with
RCA3001 and RCA3003 devices) is used to obtain a I-dB
bandwidth of approximately 500 MHz for the input section
of the RCA3005 device. The test circuit, shown in Fig.
12(a) was originally designed for a center frequency of

(1'.7°)~f

~.)

j

f7'777n

0.140
.-1(3.56)

fL 10

J

(25~40)

0.075

1'

0.70T"·91l
(17.781
(a) 2.5 GHz CIRCUIT

(LEA~LL~N~~H) L

~

r

c

0.075

~~"91)

o.• oJL

(5.08)

10

50n

=OUTPUT

J

(25:40)

(b) MODIFIED OUTPUT LINE FOR
2.3 GHz OPERATION
92CS-25066

Fig. TO - 2.3- and 2.7-GHz circuits using the RCA3003 with broadband input and output matching networks.

CI

: 10pF, ATC-IOO, OR EQUIVALENT

C2

: FILTER CON, A-B, SMFB-AI,OREQUIVALENT

RFC : 0.70 INCH LENGTH NO. 32 WIRE (LAY FLAT ON CIRCUIT
BOARD)

I

60~--~----~--~----~--_r----+_--_+----~

LINE SECTION DETAILS: 10 MIL TEFLON- FIBERGLASS
DIMENSIONS IN INCHES (AND MILLIMETERS)

X,

0.25

-

~
=5i

L""1I

l:J'5
10~--4---~----~----~--~----~--_+--~

--

z~e:i 10~~~~:E~~t;~=t=~
--8 ~
28V___
_ __ ............ _
~

~ 6~22~V~-~--~~--~----~--~~,~_+----+'--__l
~

(0.64)

L

0.13
(3.30)

=i

1-0.075

0.70
(17.781

~

030

6.35) ~(i.62)

0.911

0.175

L
~

0.50

.-1{4,451

U3.21)~1

11f-(l5.24)
0.60j

(a) 2.1 GHz CIRCUIT

OA01t:j --...i U.52 )

0.060

(lO.l6).L

0.5'
(13.21)

~I

0.029

~---.f"(7.II)

fLo.50J
(12.70)

Vee" AS SHOWN

.n

Re "0
PIN"O.4W

(b) 2.3 GHz OUTPUT LINE

92CS-25068

Fig. 12 - Amplifier circuit using the RCA3005 transistor.

'"I
"'
~

w

NPUT RESPONSE

3

"
28 V

~

•
g

2. V

"

,

"
"

----

-',

2.3 GHz
OUTPUT RESPONSE

I

I

'"

,1>I'-...

,--

'"

,. 2.7 GHz (29 V)
OUTPUT RESPONSE

0,.':8----;;2".0;---;;21,.1---,2;>.,.2'.---,2".3. .-,2!:...------,2f .5,---.o'.O.---2':.7
FREQUENCY-GHz

Fig. 11 - Performance of the circuit in Fig. 10.

484

92CS-25067

approximately 2.1 GHz. A JO-mil Teflon-fiberglass circuit
board was chosen to better define the micros trip stub
sections and to achieve low transformer impedances with
reasonable line dimensions .
The tapered·line output transformers were also evaluated.
The first design, shown in Fig. 12(a), matches the collector
load impedance at a center frequency of 2.1 GHz. The
performance of this output section is shown by the
dashed-line curves of Fig. 13. The output I-dB bandwidth
was limited to about 200 MHz, as a result, in part, of the
higher output Q of the RCA3005.

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AN-6307
70

Oscillator Designs

f60

--- y -, p--..::1--- ,

~50

,"

~40
~30

,

/

No attempt was made to evaluate the performance of the
RCA3005 as an oscillator. However, performance similar to
that of the RCA3001 and RCA3003 can be expected. For
example, 5 watts of output power at 2.0 GHz can be
expected of the RCA3005 device in oscillator service.

~

V

!.!

~ 20
10

~

10

B __

z

~

6

'"

4

...

~

/'

,

2

Vee

./

V'

-"' - -

--

Other Designs

Not all possible design techniques have been evaluated
above. The more conventional techniques, such as two-step
in-line transformersS and ladder or Chebyshev-type networks (using lumped or distributed elements), could be
used to obtain reasonable bandwidths. In addition, further
size reduction could be achieved through the use of alumina
circuit boards. Alumina boards could also be expected to
further improve the bandwidth of tapered-line
transformers.
The circuit dimensions given in this Note are based on the
characteristics of circuit boards available to the author.
Variations in the characteristics of these boards from
different suppliers as well as variations in device characteris-

t-

....., r-.

-2BV

Re ·O,n
PIN" 0.8 W

6

--

V""

"

/,- r----.. ~PUT RESPONSE

/'

"

, 1/ V'

2

0

1.8

1.9

-,~

2.1 GH:z
'.eUTPUT

""-...

/2.3G"'

rUTPUT

2.0

r--

tics may require some adjustment of circuit dimensions for

proper circuit operation.
2.1
2.2
FREQUENCY -

2.3

2.4

GHz

2.5

2 ••

REFERENCES

92CS-2!5069

Fig. 13 - Performance of the circuit of Fig. 12.

I. Characteristics and performance data for the RCA3000series transistors are given in RCA Data File No. 657.
2. Womack, C.P" "The Use of Exponential Transmission Lines
in Microwave Components", IEEE Transactions on Micro-

In the output circuit of Fig. 12(b), a microstrip
capacitive-stub section is used to "tune out" some of the
excess output inductance, and the tapered-line transformer
is redesigned for a center frequenl'}' of 2.3 GHz. The
response of this output circuit is shown by the dashed (long
and short) curves of Fig. 13. The I-dB bandwidth has been
increased to about 350 MHz, and covers the range of
approximately 2.05 to 2.4 GHz. The power output, power
gain, and collector efficiency of these circuits closely
approaches the performance obtainable under narrowband
conditions.

wave Theory and Techniques, Vol. MIT-II, March 1962.
3. French, G.N., Fooks, E.H., "The Design of Stepped
Transmission-Line Transformers", IEEE Transactions on
Microwave Theory and Techniques, Vol. MTT-16, October
1968.
4. "High-Power Transistor Microwave Oscillators",
Hodowanec, G., RCA Application Note AN-6084.
5. French, G.N., and Fooks, E.H., "Double Section Matching
Transformers", IEEE Transactions on Microwave Theory
and Techniques.

485

Subject Index
Page
Nos.

Page
Nos.

A

F

Aircraft-radio transistors
Amplifier, broadband (118·to·136·MHz),
4-watt (PEP):
Design considerations (AN·3749)
Load·mismatch test (AN·3749)
Output power and modulation (AN·3749)
Performance and adjustment (AN·3749)
Amplifier, broadband, rf, linear, push·pull,
15(J.watt PEP (AN·4591)
Amplifier circuit, broadband, uhf (AN·6010)
Arrhenius plot (AN·6229)
Amplitude modulation (AN·4421)

14

387
385
385
389
435
441
473
419

Ferrite cores (AN·4591)

432

G
Gain equalizer for uhf amplifier (AN·6010)
GIGAMATCH transistors

445
12

H
High·frequency power transistors

B
Broadband
Braodband
Broadband
Broadband
Broadband
Broadband

rf circuit design (AN·4421)
rf operation (AN·4774)
rf power amplifier (AN·3755)
transistor rf amplifier (AN·3749)
uhf amplifier (AN·6010)
uhf circuit, design approach (AN·6010)

421
438
395
385
445,449
443

C

(technical data, File No. 548)
High·power generation (AN·3755)
High·power oscillators (AN·6084, AN·6291)
Hot-spot thermal resistance (AN·4774)
Hotspotting (AN·4774, AN·6229)
Hybrid combiners (AN·3755)
Hybrid combiner/dividers (AN·4591)

Internally-matched transistors
Intrinsic transistor structure (AN-3755)

Case·temperature effects (AN·4774)
CATV/MATV transistors
Cavity oscillator (AN·6291)
CB-Radio transistors
Coaxial·line rf power amplifier (AN·3764)
Coaxial'package transistors (AN·3764)
Current density, effect on reliability (AN·6229)
Curves, rf power-transistor power-frequency

439
16
475
16
436
436
471
9·11

D
DC safe area (rf power transistor, AN·4774)
Dimensional outlines

260
397
451,475
438,440
437,471
399
433

12,13
395

J
Junction temperature, effect on reliability

(AN·6229)

471

L
437
368

life·testing (AN·6229)
Linear amplifier, push·pull 150·watt,
2·to·30·MHz (AN·4591)

472
435

Linear applications of rf power

E

transistors (AN·3755)

Low-noise transistors
Electromigration process (AN·6229)
Emitter ballasting (AN·4774, AN·6229)
Emitter ballast resistance (AN·4591, AN·6229)

486

471
438,471
429,471

Lumped·constant rf power amplifiers (AN·3764)
Lumped-constant rf power oscillators
(AN·3764, AN·6291)

397
16
410
409,475

Subject Index
Page
Nos.

Page
Nos.
Circuit impedances (AN-4421)
Circuit performance (AN-4421)
Evaluation circuit (AN-4421)
Gain and VSWR control (AN-4421)
Hybrid combiners (AN-4421)
Input-circuit design (AN-4421)
Output-circuit design (AN-4421)
Package design (AN-4421)
Practical circuits (AN-4421)
Reduction of VSWR (AN-4421)

M
Marine-radio transistors

Metallization (AN-6229)
Microstripline circuits (AN-4025, AN-6307)
Design of (AN-4025)
Mounting arrangement (AN-4025)
Performance of (AN-4025)
Microstripline oscillator (AN-3764, AN-6291)
Microwave power amplifiers (AN-3764)
Biasing arrangerrents (AN-3764)
Coaxial-line types (AN-3764)
Device and package construction (AN-3764)
Design of (AN-3764)
Large-signal amplifier operation (AN-3764)
Lumped-constant, common-base types (AN-3764)
Performance of practical circuits (AN-4025)
Power gain (AN-3764)
Pulse operation (AN-3764)
Reliability (AN-3764)
Stripline type (AN-3764)
Microwave power oscillators (AN-3764)
Basic configuration (AN-3764)
Design of (AN-3764)
Device and package construction (AN-3764)

Lumped-constant type (AN-3764)
Microstripline type (AN-3764)
Reliability (AN~3764, AN-6229)
Wide-band type (AN-3764)

Microwave transistors

15
471
411
412
411
415
408,475
404
409
405
402
404
404
410
415
409
406
404
406
402
407
407
402
408
408
404,471
408
12

Power-frequency curves for rf power transistors

Power oscillators (AN-3764, AN-6084,
AN-6291, AN-6307)

Lumped-constant
Microstripline

Wideband

402,451,475,480
408
408
408

Power transistors, vhf/uhf, broadband
power-amplifier applications of (AN-601 0)

441

R
Reliability of microwave power transistors

(AN-3764, AN-6229)
RF operation (AN-4774)
RF power amplifiers (AN-3755, 3764,
4421)

402,471
438
395,410,424,425

RF power devices
Application notes for

380-485
9-11
12-16
18-378

Power-frequency curves
Selection charts

Technical data

o

RF power transistors, power-frequency

Oscillator circuits (AN-3764, AN-6084,
AN-6291)
Oscillator, microstripline (AN-3764, AN-6291)
Oscillator-multipliers (AN-6084, AN-6291)
Overlay construction (AN-6229)

RF power transistors, selection charts for:

curves
408,451,475
408,475
451,475
471

9-11

Aircraft-radio applications
CB-radio applications
Marine-radio applications
Microwave applications

Military applications
CATV/MATV and small-signal applications
c)

Mobile-radio applications

p

421
424
417
418
419
421
419
417
424
417
9-11

Single-sideband applications

14
16
15
12
13,15
16
13,14
15

RF power transistors in linear applications

Peak-envelope-power rating (AN-4591)

Planar transistors, rf power (technical data)
Polycrystalline silicon layer (AN-6299)
Power amplifiers, broadband, uhf/microwave

(AN-4421)
Amplitude modulation (AN-4421)
Cascade and parallel connections (AN-4421)

428
18-48
471
417
419
424

(AN-4591)

427

RF power transistors, pulsed operation of

(AN-3755)
R F power transistors, safe-area curves for
(AN-3755)

393
393

RF power transistor, for single-sideband

linear amplifier (AN-4591)

427

487

Subject Index
Page
Nos.

s
Single-sideband transistors
Single-sideband communications systems
(AN-4591)
Stripline~package microwave power transistors
Stripline power amplifier (AN-3764, AN-6307)
Switching transistor, rf power, planar (technical
data, File Nos. 44, 56)

15
427
12
406,480
38,45

T
Temperature-sensing diode (File No. 484)
Thermal resistance, hot·spot (AN·4774,
AN-601O)
Transformers, transmission·line (AN-4591)
Transistor, rf power single-sideband
(technical data, File Nos. 268, 551)
Transistor structure, intrinsic (AN-3755)
Transmission·line transformers (AN-4591)

179
438,441
431
92,283
395
431

u
UH F amplifier, single-ended (AN-601O)
UHF power generation (AN-3755)
Package considerations (AN-3755)
Pulsed operation of rf power trans. (AN·3755)
Reliability considerations (AN-3755)
R F performance ·criteria (AN·3755)
Safe-area curves for rf power trans. (AN-3755)
UHF power transistors, broadband applications
of (AN-601 0)
8roadband amplifier chain (AN-601O)
Broadband circuit design approach (AN-601O)
Combined·transistor stage (AN-6010)
Gain equalizer (AN-601 0)
Single-ended amplifier (AN-601 0)
UHF power transistors, characteristics of (AN-601O)
Hot·spot thermal resistance (AN-601 0)
Overdrive capability (AN-6010)
Pulse operation (AN-601O)
UHF transistors

445
390
390
393
392
390
393
441
449
443
449
447
445
441
441
441
441
12,13

v
VH F transistors
Voltage-tuned oscillator (AN-6084, AN-6291)

488

14
451,475
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