1977_National_Power_Transistor_Databook 1977 National Power Transistor Databook

User Manual: 1977_National_Power_Transistor_Databook

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POWER
TRANSISTOR
DATABOOK

92-Plus
TO-202
TO-220
TO-126
TO-3
Processes

Introduction

Here is the new Power Transistor catalog from
National Semiconductor Corporation. It contains
information on all of National's Power Transistors,
as of th is date.
Included in this catalog is a part number to
process conversion listing and a reference guide
showing all device types available for any process/
package combination.
Because National, is rapidly expanding its
Power Transistor capability, if you don't find the
device you want, contact your nearest sales representative for additional information.

© National Semiconductor Corporation
2900

Semiconductor

Drive,

Santa

Manufactured under one or more of the following U.S. patents:
Clara,

California

'3083262, 3189758, 3231797, 3303356, 3317671,
3381071, 3408542, 3421025, 3426423, 3440498,
3519897, 3557431, 3560765, 3566218, 3571630,
3579059, 3593069, 3597640, 3607469, 3617859,
3633052,3638131,3648071,3651565,3693248,

95051,

(408) 737-5000/TWX (910) 339-9240
National does hot assume any responsibility for use of any circuitry
described; no circuit patent licenses are implied, and National

reserves the right, at any time without notice, to change said circuitry.

2

3323071,
3518750,'
3575609,
3631312,

Ordering Information

Devices are identified by a part number consisting of both alpha and numeric digits. Part numbers
may be either JEOEC or PRO Electron registered numbers, or in-house numbers. Examples of
each follow.
1.

2N4918
B0675

JEOEC Registered Numbering System
PRO Electron Type Designating Code

2.

rCw;re
92PUOl

Nom",

Package Prefix

PACKAGE
040,041
042,043
044,045
MJE
NCBJ
NCBS
NCBT
NCBW
NSD
NSP
TIP
92P

PREFIX
TO·202
TO-202
TO·220
TO·126, TO-220
TO-126
TO·39
TO·92
TO·220
TO·202
TO-220
TO-220
92-Plus

3

Table of Contents

Edge Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . . . . .
Ordering Information .................................... ~ . . . . . . . . . . .
Alpha-Numerical Index. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Transistor Reference Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
National Semiconductor Power Transistor Listing. . . . . . . . . . . . . . . . . . . . . . . . . . ..

2
3
9
13
17

Section 1-92-Plus
92PE37A thru 92PE37C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
1·3
92PE77A thru 92PE77C ......... , ..... , . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
1·3
92PE487 thru 92PE489 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . ..
1-5
92PU01, 92PU01A . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . .. . . . . . . . . . . . . . . ..
1-7
92PU51,92PU51A ............. , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1·7
1·9
92PU05 thru 92PU07. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
92PU55 thru 92PU57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1-9
92PU10 .............. , .... ' ........ , . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-11
92PU45,92PU45A . , ........ , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-13

Section 2-TO-202
NSDU01, NSDU01A ............... , .. , . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU51, NSDU51A .... , ......... ',' . . . . . . . . . . . . . . . . . . . . . . . . . . , . . ..
NSDU05 thru NSDU07 . , ................ , ..... , . . . . . . . . . . . . . . . . . . ..
NSDU55 thru NSDU57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU45, NSDU45A . . . . . . . . . . . . . . . . . . . . . . , ........ ,'. . . . . . . . . . . . . ..
NSD3439, NSD3440 . . . . . . . . . . . . . . . . . . . . . . . . . . , ....... ', . . . . . . . . . . ..
NSD102 thru NSD106 ......... , . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . .
NSD202 thru NSD206 ........... , . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . ,.
NSD131 thru NSD135 ... , ......... , ........ , . . . . . . . . . . . . . . . . . . . . . . .
NSD6178, NSD6179 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD6180, NSD6181 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSE180, NSE181 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSE170, NSE171 ............. , .............. , ....... , ............

2-3
2·3
2-5
2·5
2·7
2·9
2·11
2-11
2-13
2-15
2-15
2·17
2·17

Section 3-TO-220
D44Cl thru D44C12 . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
D45Cl thru D45C12 ................ , . . . . . . . . . . . . . . . . . . . . '. . . . . . . . ..
NSP41 ..... , .............. , .................. , . . . . . . . . . . . . . . . . ..
NSP41A . , ......... , ....... , ... , ..... , . . . . . . . . . . . . . . . . . . . . . . . . ,
NSP41B .. , . . . . . . . . . . . . . . . . . . , , ..... , . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP41C .. , . . . . . . . . . . . . . . . . . . . . . , : ...... , ........ , . . . . . . . . . . . . ..
NSP42....... , .. , , .. , , ...... , .. , . . . . . . . . . . . . . . . . . : . . . . . . . . . . . ..
NSP42A . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . .. . . . . . . ..
NSP42B ............. , ........... , , . . . . . . . . . . . . . . . . , . . . . . . . . . . . ..

5

3·3
3·3
3-5
3-5
3-5
3·5
3-5
3-5
3·5

Table of Contents

(Continued)

Section 3-TO-220

(Continued)

NSP42C. . . .. .... . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP520. NSP521 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,
NSP370. NSP371 . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N4921 thru 2N4923. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP4921 thru NSP4923. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N4918 thru 2N4920. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP4918 thru NSP4920 . . . . . . . . . . . . . . . . . : ......... , . . . . . . . . . . . . . . . ..
NSP5190 thru NSP5195 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP29 . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP29A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ; . . . . . . . . . . . . . . . . . . . . . . . . .
TIP29B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP29C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ' ........
TlP30A ...................•.....................................
TIP30B . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . .' ...................
TIP30C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : ..................
TIP31 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP31A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP31B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP31C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP32 . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
,TlP32A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP32B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP32C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP61 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " ...... ',' ......... : .........
TIP61A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP61B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP61C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP62 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP62A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ',' ............
TIP62B .............. , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP62C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . , . . . . . . . . . . . . . . . . . . . . . .
TIP110 ..•............... ' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP112 . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . , .....
TlP115 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "
TIP116 . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP117 . . . . . . . . . . . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP120 . . . . . . . . . . . . . . . . . . . . . .' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . .
2N5293 thru 2N5298 . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,. . . . .
2N6106thru 2N6111 . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . .

6

3·5
3·7'
3·7
3·9
3·9
3·9
3·9
3·13
3·15
3-15
3-15
3-15
3·15
3-15
3·15
3-15
3·17
3·17
3·17
3-17
3·17
3-17
3-17
3·17
3-19
3·19
3·19
3-19
3-19'
3·19,
3-19'
3-19
3-21
3-21
3-21
3-21
3-21
3-21
3-25'
3-25 i
3-29 i
3-31 1

Table of Contents

(Continued)

Section 3-TO-220
2N6121
2N6124
2N6129
2N6132
2N6288

thru
thru
thru
thru
thru

(Continued)

2N6123. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " .... " ....
2N6126 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N6131. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .' .... , ............
2N'6134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N6293. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . .. . . . .

3-33
3-33
3-35
3-35
3-37

Section 4-TO-126
MJE800 thru
MJE700 thru
2N6037 thru
2N6034 thru

MJE803 . . . . . . . . . . . . . . . . . . . .
MJE703 . . . . . . . . . . . . . . . . . . . .
2N6039. . . . . . . . . . . . . . . . . . . . .
2N6036 . . . . . . . . . . . . . . . . . . . . .

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4-3
4-3
4-7
4-7

2N3713 thru 2N3716. . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . ..
2N3789 thru 2N3792. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5873,2N5874 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5871,2N5872 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5881,2N5882 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N5879, 2N5880 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N6055, 2N6056 . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N6053,2N6054 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5-3
5-3
5-7
5-7
5-11
5-11
5-15
5-15

Section 5-TO-3

Section 6-Processes
Process 35 RF-H'F Power Amplifier. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 36 High Voltage Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 37 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 38 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 39 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 77 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 78 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process.79 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 2C Epitaxial Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 2E Epitaxial Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 2J Power Darl i ngton . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 3C Epitaxial Power. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . .
Process 3E Epitaxial Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 3J Power Darlington . . . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . . .
Process 4A Epitaxial Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 5A Epitaxial Power. . . . . . . . . . . . . . . . . . . . . . . . . . • • . . . . . . . . . . . . . . .

7

6-3
6-5
6-7
6-9
6-11
6-13
6-15
6-17
6-19
6-21
6-23
6-25
6·27
6-29
6-31
6·33

Alpha-Numerical Index

2N3713.. . . . . . . .. . .. . . . . . . . . . . .. . . . . .. . . . . . . . .. . .. . .. . .. . .. . . ..
2N3714. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N3715. . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N3716. . . . . . . . . .. . . .. . . .. .. . . .. .. . . .. . .. ... .. . . .. . . . . . . . . . . . ..
2N3789. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N3790 ........................ ; . . . . . . . . . . . • . . . . . . . . . . . . . . . . . ..
2N3791. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N3792. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N4918. . . .. . . . ... . .. . . . . .. . .. . . . . . . .. . . •. .• . . . . . ... . . . . . . . . . ..
2N4919... .. .. .. . . .. . . . . .. . . .... .. . . ... . . . . . .. . . . . . . .. . . . . . . . ..
2N4920. . . . .. . . . . . . .. . .. .. . . .. . . ... . . . . . . . . .... . . ... . . . . . . . . . ..
2N4921. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N4922 ..............•........................ .' ............ '. ...
2N4923. . . . .. . .. . . . . . .. . . . .. . ... . . . • .. . . . . . •.. .. . . .. . . . . . . . . . ..
2N5293 .........................................................
2N5294 .........................................................
2N5295. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N5296. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N5297. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . ..
2N5298 ........................................................
2N5871. . . . . . . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5872. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . ..
2N5873. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5874. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5879. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N5880 ........................................................
2N5881 ........................................................
2N5882 ........................................................
2N6034. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
2N6035. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . ..
2N6036. .. .. . .. . . ... .. .. .. . .. . .. . . . ... . . . . . . .. .. . . . . . . . . . . . . . ..
2N6037. . . .. .. . . . ... . .. . .. . . .. . . . . . . . . . . .. . . . . . . . . . . . . .. . . . . . ..
2N6038... .. . . . . . . . ... . . . . . . . . .. .. . . . . . . . . . .. . . . .. . . . . . . . . . . • ..
2N6039 ........... , . . . . . .. . . . . .. .. . ... . . . . ... .. . .. . . . . .. . . . . . ..
2N6053 ...•....................................................
2N6054 .........................................................
2N6055 ........................................................
2N6056 ........................................................
2N6106 .........................................................
2N6107 ........................................................
2N6108 ........................................................
2N6109 .........................................................
2N6110 ........................................................
2N6111 ........................................................
2N6121 ..........................................................
2N6122 ........................................................
2N6123 ........................................................
2N6124. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . .
2N6125 ........................................................
2N6126 ........................................................
2N6129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N6130 ........................................................
2N6131 ........................................................
2N6132 .•......................................................
2N6133 ...........................................•............
2N6134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N6288. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . .
9

5·3
5·3
5·3
5·3
5·3
5·3
5·3
5·3
3·9
3·9
3·9
3·9
3·9
3·9
3·29
3·29
3·29
3·29
3·29
3·29
5·7
5·7
5·7
5·7
5·11
5·11
5·11
5·11
4·7
4·7
4·7
4·7
4·7
4·7
5·15
5·15
5·15
5·15
3·31
3·31
3·31
3·31
3·31
3·31
3·33
3·33
3·33
3·33
3·33
3·33
3·35
3·35
3·35
3·35
3·35
3·35
3·37

Alpha-Numerical Index

(Continued)

2N6289 ..... '.' . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N6290. . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N6291 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . .
2N6292 . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, 2N6293 .............. -. . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . .
92PE37A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ; . . . . . . ..
92PE37B. . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . ..
92PE37C .......... _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
92PE77A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . ..
92PE77B. . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
92PE77C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
92PE487. . . . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
92PE488 .............. i • . • • . . • • . • . • . , • . • . . . • • • • • • . . • . • . . . . . . • . .
92PE489 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
921'U01 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .,..
92PU01A ... , . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . , . . . . . . . . . • ..
92PU05. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . ..
92PU06 .•.... '.'. . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . . . . . . . . . . . . ..
92PU07. .. . .. . . . .. . . .. . . . . . . . . . . . . .. . . . . . . .. . .. . .. . . .. .. .. . . ...
92PU10 .................................. '.......•.... .' ..........
92PU45 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ~ .....
92PU45A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
92PU51. . . .. . . . . .. . . .. .. .. .. . .. . . . .. ... . .. . ... . . . . ... .. . . . . . . ..
92PU51A. . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
92PU55. . . .. .. .... . . .. .. . . .. . . . . . .. . .. . . .. ... . . . . . . . . . . . . . . . . ..
92PU56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .,.. . . . . .. . . . . . . . . . . . . ..
92PU57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . . . ..
D44Cl . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ; . . . . . . . . . . . . . . . . . . . .
D44C2 .. . . . . . .. . . . . .. .. . . . . . ... . . . .. .. . . . ... .. . . . . .. . . . . . . .. . ..
D44C3 ......................................... : . . . . . . . . . . . . . . ..
D44C4 . . . . . . . . .•. . .. . .. . . . ..•.• . . .. .. . . .. . . . . . . . . . . . . . . . .. . . ..
D44C5 .. . . ... .. . . . . .. .. . . . . . . . . . . . . . . . .. . .. .. . .. . . . . . .. . . . . . ..
D44C6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,
D44C7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . • . . . . . . . . . . . . . . . . . ..
D44C8 .. . . . . ... .. . ... . . ... . . . . .. . . . . . .. . . . . . .. . . . . . . . . . . . . . . . ..
D44C9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . ..
D44Cl0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . • ..
D44Cll . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ' ...... '. , , .. , . , , "
D44C12 .. , ... , , .. , , , , , ... , . , , . , , .... , .. , , , ',' ..... , , . , .. , . . . . . . ..
D45Cl . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D45C2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . ..
D45C3 . . . . . ... . . .. ... ... . . . . . .. . . . .. . . . . . . .. .... . . . . . . . . ... .. ..
D45C4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . ..
D45C5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . . . . . . . ..
D45C6 . ... . .. . . ... . .. . . . . .. . . .. . . . .. . . . . . . .. .... . . . .. . . . . . . . ..
D45C7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ',' ... , .• , .. , . . . . . . . . ..
D45CB , . , , , . , ........... , . , , .. , .. , . , .......... , . , . . . . . . . . . . . ..
D45C9 . . . . . . . . . . . . . . . .' , .. , ..... ',' . , ,' . . . . . . . . . . . . . . . . . . . . , . . . ..
D45Cl0............ '. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , , . , . ,.
D45Cll, . , . . . . . . . . . . . . . . . . , .. , .. , .......... , ......... , ..... , . ,.
D45C12 ... ' , .. , . __ . ' .... , . , ... , , ......... , . . . . . . . . . . . . . . . . . . . ..
MJE700. , , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,
MJE701 ...... , ........ , , . . . . . . . . . . . . . . . . . . . . . '... , ....... , . . . . ..
MJE702. . . . . . . . . . . . . . . . . . . , .. , ........ " , . . . . . . . . . . . . . . . . . . . . . ..
MJE703. . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . , ....... ,
MJE800 .. , ............ , . . . . . . . . . . . . . . . . . . . . , .... , ......... , . , •.
10

3·37
3·37
3·37
3·37
3-37
'·3
1-3
1-3
1-3
1·3
1-3
1-5
1·5
1-5
1·7
1-7
1-9
1-9
1-9
1-11
1·13
1-13
1·7
1·7
1-9
1-9
1-9
3-3
3-3
3-3
3-3
3-3
3·3
3·3
3-3
3-3
3·3
3-3
3·3
3·3
3-3
3·3
3·3
3·3
3-3
3·3
3·3
3-3
3-3
3-3
3-3
4·3
4-3
4·3
4·3
4-3

Alpha-Numerical Index

(Continued)

MJE801. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
MJE802. . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . .. . . . . . . .. . . . . . . . . . ..
MJE803. . . . . ... . . . . . . . .. . . . . . . . . . . .. . . .. . . . . . . . .. . .. . . . . . . . . . ..
NSD102 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD103 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD104 . . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD105 . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD106 . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD131 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD132 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD133 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD134 .. _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD135 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD202 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSD203 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSD204 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,
NSD205 . _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSD206 . _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD3439. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . ..
NSD3440. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSD6178. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD6179. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ; . . . . . . . . . . . . . . . . . . . .
NSD6180. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSD6181 .. : . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSDUOl . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU01A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU05. . . . . . .. . . . . . . .. .. .. . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . ..
NSDU06. . . . . . .. . . . .. . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . ..
NSDU07 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . . . . ..
NSDU45.. . .. . . . . . . . . . .. .. . . . . . . .. . . . .. . . . . . . . . . . . . . . . .. . . . . . ..
NSDU45A . . . . . . . . . . . . . . '. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU51 . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU51A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSDU55 . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . .. . . . .. . . . . . . . . . . . . . ..
NSDU56. . . .. . .. . . . . .. . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSDU57. . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. .. . . . . . . . . . . ..
,NSE170. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSE171 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSE180. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ',' . . . . . . . . . . . . . . . . . . . . . .
NSE181 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSP41. . . . . . . .. . . . . . .•. . . . .. .. .. . . .. . . . . . . . . . . . . . .. . . . . . . . . . . ..
NSP41A . . . . . . . . . . . . . . . . . . . . . . . . . '. .. . . . ... . . .. . . . . . . . . . . . . . . . ..
NSP41B. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP41C....... , . . .. . . . .. .. .. .. . . . . . . .. . ... . . . . . . .. . . . . . . . . . . . ..
NSP42...... , . . . . .. . . . .. .. .. . . . . . . . . . . . . .. ... . . . .. . . . . . . . . . . . ..
NSP42A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . ..
NSP42B ....... , .. . . . . . . . . . .. .. .. . . . . .. . . . . . .. . .. . .. . . . . . . . . . . ..
NSP42C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . ..
NSP370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . ..
NSP371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . ..
NSP520 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ." . . . . . . . . . . . . ..
NSP521 . . . . . . . . . . . . . . . . . . . . . . . . '. . . .. . . . . . . . . . . .. . .. . . . . . . . . . . ..
NSP4918 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,.
NSP4919 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . ..
NSP4920. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP4921 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
11

4-3
4-3
4-3
2-11
2-11
2-11
2-11
2-11
2-13
2-13
2-13
2-13
2-13
2·11
2-11
2-11
2-11
2-11
2-9
2-9
2-15
2-15
2-15
2-15
2-3
2-3
2-5
2-5
2-5
2-7
2-7
2-3
2-3
2-5
2-5
2-5
2-17
2-17
2-17
2-17
3-5
3-5
3-5
3-5
3-5
3-5'
3-5
3-5
3-7
3-7
3-7
3-7
3-9'
3-9
3-9
3-9

Alpha-Numerical Index

(Continued)

NSP4922 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . . . . . . . ..
NSP4923 .... , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NSP5190 ..... " . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " . . . . . . . . . . . . .
NSP5191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSP5192 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ;'. . . . . . . . . . . . . . . . . .
NSP5193 ......... ' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NSP5194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '.'
NSP5195 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 2C Epitaxial Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 2E Epitaxial Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 2J Power Darlington . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 3C Epitaxial Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 3E Epitaxial Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 3J Power Darlington . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 4A Epitaxial Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 5A Epitaxial Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 35 RF·HF Power Amplifier. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 36 High Voltage Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 37 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 38 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Process 39 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 77 Medium Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ' .....
Process 78 Medium Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Process 79 Medium Power . . . . . . . . . . . . . .'. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP29 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP29A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP29B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ',' . . . . . . . . . . . . . .
TIP29C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . .
TIP30A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP30B . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP30C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP31 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . .
TIP31A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . .
TIP31B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP31C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP32 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP32A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ; . . . . . . . . . . . . . . . .
TIP32B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP32C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP61 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP61A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP61B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . .
TIP61C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP62 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP62A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP62B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP62C .... ' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TlP110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ~ ....
TlPll1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIPl12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '........
TIPl15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIPl16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP117 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TIP125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. . . . . . . . . . . . . . .
12

3·9
3·9
3·13
3·13
3·13
3·13
3·13
3·13
6·19
6·21
6·23
6·25
6·27
6·29
6·31
6·33
6·3
6·5
6·7
6·9
6·11
6·13
6·15
6·17
3·15
3·15
3·15
3·15
3·15
3·15
3·15
3·15
3·17
3·17
3·17
3·17
3·17
3·17
3·17
3·17
3·19
3·19
3·19
3·19
3·19
3·19
3·19
3·19
3·21
3·21
3·21
3·21
3·21
3·21
3·25
3·25

PACKAGE
92+ (ECS)
MAXIMUM
RATINGS
(Notes 1 and 2)

PO= 1 W@
TA = 25°C
NPN

PNP

92 + (ESC)

TO-202 (ESC)

PO= 1 W@
TA = 25°C

PO-l_75W@
TA = 25°C
PO= 10W@
TC = 25°C

NPN
92PU45
92PU45A

BVCEO = 50V,
IC = 1.5A,
(P05)

PNP

NPN
NSDU45
NSDU45A
NSD151
NSD152
NSD153
NS0154
D40Cl-8

II:

w

-

;;:
0
"2

0

I-

C1
2

w

::;

BVCEO = 100V,
IC=6A,
(P2J/3J)

II:


C1

:i:

PO=150W@
TC = 25°C

PNP

NPN

B0675
B0675A
B0677
B0677A
B0679
BD679A
MJEBOO-3
NSP2l02
2N6037-9

BD676
B0676A
B0678
BD678A
B0680
B0680A
MJE700-3
NSP2091
2N6034-6

NSP695
NSP695A
NSP697
NSP697A
NSP699
NSP699A
NSP701
NSP2l00
NSP2l0l
NSP2l03
TIPll0-3
2N6386
TIP12l
TIP122

PNP

NPN

PNP

NSP696
NSP696A
NSP698
NSP698A
NSP700
NSP700A
NSP702
NSP2090
NSP2092
NSP2093
TIPl15-7
TIP125-7

2N6055-9
2N6300
2N6301
MJ1000
MJ100l

2N6050-4
2N6298
2N6299
MJ900
MJ901

NSDU10
NSD131-5
NSD3439
NSD3440
MJE340
MJE341
MJE344
MJE3439
MJE3440
2N5655
2N5656
2N5657

I-

:r

TO-3

NPN

BVCEO = 100V,
IC= lOA,
(P4K/5K)
92PE487
BVCEO = 500V,
92PE488
IC= 100 rnA,
92PE489
(P48)

TO-220
PO-2W@
TA = 25°C
PO=90W@
TC = 25°C

BVCEO = 350V,
IC= 500 rnA,
(P36)

I

-

ap!nD

a~UaJaJal:l

JOIS!SUeJ.1 JaMOd

Power Transistor Reference Guide
PACKAGE

MAXIMUM
RATINGS
(Note. 1 and 2)

92+ (ECB)

92+ (EBC)

PO=lW@
TA = 25°C

PO= 1 W@
TA=25°C

NPN
B0373A
B0373A·l0
BVCEO= 45V.
B0373A·16
IC= 1.5A.
B0373A·25
(P37)

PNP

NPN
B0371A
B0371A·l0
B0371A·16
B0371A·25
92PUOI
92PUOIA

IC = 1.5A,
(P77)

w
(I)
0

"0:

:::l

"-

..J

o:t

0:

w

zw

(!1

B0373B
B0373B·l0
B0373B·16
B0373B·25
B0373C
BVCEO~ 80V,
BD373C·6
IC= 1.5A,
BD373C·l0
(P38)
BD373C·16
92PE37A
92PE37B
92PE37C

BVCEO ~ 80V,
IC~ 1.5A,
(P78)

NPN
04001·5
NSOU01·3
NSOU01A

04007
04008
040010
040011
D40013
D40D14
D40El
040E5
D40E7
NSDU05
NSD6178
NSD6179

B03718
B0371B·l0
B0371B·16
B03718·25
B0371C
BD371C·6
BD371C·l0
BD371C·16

B0372A
BD372A·l0
B0372A·16
BD372A·25
B0372B
B03728·10
B0372B·16
B0372B·25
B0372C
BD372C·6
B0372C·l0

PNP

NPN
042Cl·6
NSE180

04101
04102
04104
04105
041El
NSOU51
NSOU51A
NSOU52
NS0202
NS0203

B0372A
B0372A·l0
B0372A·16
B0372A·25
92PU51
92PU51A

BVCEO~45V,

.j>,

PNP

TO·202 (EBC)
PO= 1.75W@
TA = 25°C
PO= 10W@
TC = 25°C

TO·202 (BCE)
PO-l.75W@
TA = 25°C
PO=10W@
TC = 25°C

-

-

NPN
B0135
MJE180
MJE720

043Cl·6
NSE170

042C7·12
NSE181

041D7
D4108
041010
041011
D41D13
041014
D41E5
D41E7
NSDU55
NSD6180
NS06181

BD370A
BD370A·l0
BD370A·16
BD370A·25
BD370B
BD370B·l0
BD370B·16
BD370B·25
BD370C
BD370C·6
BD370C·l0

PNP

TO·126
PO-l.5W@
TA = 25°C
PO=40W@
TC = 25°C
PNP

TO·3

TO·220
PO=2W@
TA= 25°C
PO=90W@
TC = 25°C
NPN

PNP

PO=150W@
TC = 25°C
NPN

PNP

B0136
MJE170
MJE710

B0137
MJE181
MJE721

D43C7·12
NSEI71

B0138
MJE171
MJE711

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .. .. . .
.~

~.r..

a".

.- UWW'W'I

I I ClII.:JI.:JI.UI

n'W'I'W'1 'W'II,",,'W' UI.IIU'W'

PACKAGE
MAXIMUM
RATINGS
(Notes 1 and 2)

92+ (ECB)

92+ (EBC)

PO= 1 W@
TA = 25°C

PO= 1 W@
TA = 25°C

NPN
BVCEO = 80V,
IC = 1.5A,
(P78)

PNP
B0372C·16
92PE77A
92PE77B
92PE77C

B03730
BVCEO = 110V,
B03730·6
IC= 1.5A,
B03730·10
(P39)

BVCEO = 110V,
IC = 1.5A,
(P79)

c:n

w
0

'"

<1.

a:

::l
<1.

«-'a:

w
w

Z

~

BVCEO = 100V,
IC= 3A,
(P2C/3C)

BVCEO - 10DV,
IC=6A,
(P2E/3E)

NPN

PNP
B0370C·16

B03710
B0371O·6
B0371O·10
92PU05
92PU06
92PU07
B03720
B03720·6
803720·16

B03700
B03700·6
B03700·16
92PU55
92PU56
92PU57

TO·202 (EBC)
PO= 1.75W@
TA = 25°C
PO= 10W@
TC = 25°C
NPN

PNP

TO·202 (BCE)
PO= 1.75W@
TA = 25°C
PO=10W@
TC = 25°C
NPN

PNP

TO·126
PO= 1.5W@
TA = 25°C
PO=40W@
TC = 25°C
NPN

NSOU06
NSOU07
NS0104·6

B0139
MJE182
MJE722

NSOU56
NSOU57
NSOU204·6

80140
MJEI72
MJE712

B0233
B0235
B0237
B0433
B0435
B0437
B0439
B0441
B0520
B0521
2N4921·3

PNP

B0234
B0236
B023B
£0434
B0436
80438
B0440
B0442
MJE370
MJE520
MJE521
2N4918·20

2N519D·2 MJE371
2N5193·5

TO·220
PO=2W@
TA = 25°C
PO=90W@
TC= 25°C
NPN

044Cl
044C2
044C4
044C5
044C7
044C8
044Cl0
NSP520
NSP521
NSP575
NSP577
NSP579
NSP581
NSP2520
NSP4921·3
TIP29
TIP29A,B,C
TIP31
TIP31A,B,C
TIP61
TIP61A,B,C
044C3
044C6
044Cll
044C12

ap!nn a:>uaJaJal:l

PNP

TO·3
PO= 150W@
TC = 25°C
NPN

PNP

045Cl
045C2
045C4
045C5
045C7
045CB
045Cl0
NSP370
NSP576
NSP578
NSP580
NSP582
NSP2370
NSP4918·20
TIP30
TIP30A,B,C
TIP32
TIP32A,B,C
TIP62
TIP62A,B,C
045C3
045C6
045Cll
045C12

JO~S!SUeJl.

JaMOd

Power Transistor Reference Guide
PACKAGE

MAXIMUM
RATINGS
(Notes 1 and 2)

92+ (ECB)

92+ (EBC)

PO= 1 W@
TA=25°C

PO=lW@
TA=25°C

NPN

PNP

NPN

PNP

TO·202 (EBC)
PO= 1.75W@
TA = 25°C
PO=10W@
TC = 25°C
NPN

PNP

TO·202 (BCE)
PO= 1.75W@
TA = 25°C
PO=10W@
TC = 25°C
NPN

PNP

NPN

PNP

BVCEO = 100V,
IC=6A,
(P2E/3E)

w

en

O'l

...a:0
...

::l
....I

«
a:
w
w

z

BVCEO = 100V,
IC=8A,
(P4A/5A)

C1

BVCEO = 100V,
IC= 12A,
(P4B/5B)

BVCEO = 100V"
IC= 15A,
(P4C/5C) .

Note 1: BVCEO and

TO·220
PO=2W@
TA = 25°C
PO=90W@
TC = 25°C

TO·126
PO= 1.5W@
TA = 25°C
PO=40W@
TC = 25°C

PNP
NSP42
NSP42A
NSP42B
NSP42C
NSP371
NSP586
NSP588
NSP5,90
NSP596
NSP598
NSP600
NSP5193·5
2N6124·6
2N6132·4
NSP2490
NSP2491
NSP105
NSP205
NSP2020
NSP2010
NSP2011
NSP2021
NSP248D-3 NSP2955
NSP5974·6
NSP3055
NSP5977-9 TIP42
TIP42A,B,C
TIP41
TIP41A,B,C 2N6106·11

NPN
NSP41
NSP41A
NSP41B
NSP41C
NSP585
NSP587
NSP589
NSP595
NSP597
NSP599
NSP5190·2
2N5293·8
2N6121·3
2N6129·31
2N6288·93

TO·l
PO= 150W@
TC = 25°C
NPN

2N3055
2N5873
2N5874
2N5877
2N5878
MJ2801
MJ2840,1
MJ3055
2N3713·6
2N5632·4
2N5758·60
2N6253
2N6254
2N6371
2N5629·31
2N5758·60
2N5881
2N5882
2N6257
2N6258

PNP

2N5871
2N5872
2N5875
2N5876
2N6594
MJ2901
MJ2940
MJ2941
2N3789·92
2N6226·31
MJ2955

2N5879
2N5880
2N6029·31

Ie values are maximum ratings. For specific conditions and limits, refer to individual process data sheets.

Note 2: Process numbers are in parentheses.

aDIn~

a:>UaJalaH J01SISUeJl JaMOd

National Semiconductor Power Transistor Listing

,

PART
NUMBER
B0135
B0136
B0137
B0138
B0139
B0140
B0201
B0202
B0233
B0234
B0235
B0236
B0237
B0238
B0239
B0239A
B02398
B0239C
B0240
B0240A
B0240B
B0240C
B0241
B0241A
B0241B
B0241C
B0242
B0242A
B02428
B0242C .
B0370A
B0370A·l0
B0370A·16
B0370A·25
B0370B
B0370B·10
B03708·16
B03708·25
B0370C
B0370C·l0
B0370C·16
B0370C·6
B03700
B03700·10·
B03700·6
B0371A
B0371A·l0
B0371A·16
B0371A·25
B0371B
B0371B·l0

PROCESS

PART
NUMBER

37
77
38
78
39
79
2G
3G
2C
3C
2C
3C
2C
3C
2C
2C
2C
2C
3C
3C
3C
3C
2C
2C
2C
2C
3E
3E
3E
3E
78
78
78
78
78
78
78
78
78
78
78
78
79
79
79
37
37
37
37
38
38

B0371B·16
B0371B·25
B0371C
B0371C·l0
B0371C·16
B0371C·6
B03710
B03710·10
B03710·6
B0372A
B0372A·l0
B0372A·16
B0372A·25
B0372B
B0372B·l0
B0372B·16
80372B·25
B0372C
B0372C·l0
B0372C·16
B0372C·6
B03720
B03720·10
B03720·6
B0373A
B0373A·l0
B0373A·16
B0373A·25
B0373B
B0373B·l0
B0373B·16
B0373B·25
B03730
803730·10
B0373C·16
B0373C·6
80373C
B0373C·10
B03730·6
80375
80375·10
B0375·16
B0375·25
B0375·6
B0376
B0376·10
B0376·16
B0376·25
B0376·6
B0377
B0377·10

PROCESS
38
38
38
38
38
38
39
39
39
78
78
78
78
78
78
78
78
78
78
78
78
79
79
79
37
37
37
37
38
38
38
38
38
38
38
38
39
39
39
38
38
38
38
38
78
78
78
78
78
38
38
17

PART
NUMBER

PROCESS

PART
NUMBER

PROCESS

B0377·16
B0377·25
B0377-6
B0378
B0378·10
B0378·16
B0378·25
B0378·6
B0379
B0379·10
B0379·16
B0379·25
B0379·6
B03800·6
B0380
B0380·10
B0380·16
B0380·25
B0433
B0434
B0435
B0436
B0437
B0438
B0439
B0440
B0441
B0442
B0533
B0534
B0535
B0536
B0537
B0538
B0633
B0634
80635
80636
B0637
B0638
B0675
B0675A
B0676
B0676A
B0677
B0677A
B0678
B0678A
B0679
B0679A
B0680

38
38
38
78
78
78
78
78
39
39
39
39
39
79
79
79
79
79
2E
3E
2E
3E
2E
3E
2E
3E
2E
3E
2E
3E
2E
3E
2E
3E
2C
3C
2C .
3C
2C
3C
2J
2J
3J
3J
2J
2J
3J
3J
2J
2J
3J

B0680A
B0681
B0682
B0733
B0734
B0735
B0736
80737
B0738
040Cl
040C2
040C3
040C4
040C5
040C7
040C8
04001
040010
040011
040013
040014
04002
04003
04004
04005
04007
04008
040El
040E5
040E7
040N1
040N2
040N3
040N4
040N5
040Pl
040P3
040P5
04101
041010
041011
041013
041014
04102
04104
04105
04107
04108
041El
041E5
041E7

3J
2J
3J
2C
3E
2C
3E
2C
3E
05
05
05
05
05
05
05
38
38
38
38
38
38
38
38
38
38
38
38
38
38
48
48
48
48
48
15
15
15
78
78
78
78
78
78
78
78
78
78
78
78
78

National Semiconductor Power Transistor Listing

D42C1
D42C10
D42C11
D42C12
D42C2
D42C3
D42C4
D42C5
D42C6
D42C7
D42C8
D42C9
D42R1
D42R2
D43C1
D43C10
D43C11.
D43C12
D43C2
D43C3
D43C4
D43C5
D43C6
D43C7
D43C8
D43C9
D44C1
D44C10
D44C11
D44C12
D44C2
D44C3
D44C4
D44C5
D44C6
D44C7
D44C8
D44C9
D44H1
D44H10
D44HTl
D44H2
D44H4
D44H5
D44H7
D44H8
D45C1
D45C10
D45C11
D45C12
D45C2

37
38
38
38
37
37
37
37
37
38
38
38
36
36
77
38
78
78
77
77
77
77
77
78
78
78
2C
2C
2E
2E
2C
2E
2C
2C
2E
2C
2C
2E
4A
4A
4A
4A
4A
4A
4A
4A
3C
3C
3E
3E
3C

PART
NUMBER

PROCESS

D45C3
D45C4
D45C5
D45C6
D45C7
D45C8
D45C9
D45H1
D45H10
D45H11
D45H2
D45H4
D45H5
D45H7
D45H8
MJE170
MJE171
MJE172
MJE180
MJE181
MJE182
MJE340
MJE341
MJE3439
MJE344
MJE3440
MJE370
MJE371
MJE520
MJE521
MJE700
MJE701
MJE702
MJE703
MJE710
MJE711
MJE712
MJE720
MJE721
MJE722
MJE800
MJE801
MJE802
MJE803
NSDU01
NSDU01A
NSDU02
NSDU05
NSDU06
NSDU07
NSDU10

3E
3C
3C
3E
3C
3C
3E
5A
5A
5A
5A
5A
5A
5A
5A
77
78
79
37
38
39
36
36
36
36
36
3C
3E
2C
2C
3J
.3J
3J
3J
77
78
79
37
38
39
2J
2J
2J
2J
37
37
37
38
39
39
48

N~~~:R

PROCESS

NSDU45
05
NSDU45A
05
NSDU51
77
NSDU51A77
NSDU52
77
NSDU55
78
NSDU56
79
NSDU57
79
NSD102
37
NSD103
37
NSD104
39
NSD105
39
NSD106
39
NSD123
08
NSD127
15
NSD128
15
NSD129
15
NSD131
48
NSD132
48
NSD134
48
NSD135
48
NSD151
05
NSD152
05
NSD153
05
NSD154
05
77
NSD202
NSD203
77
NSD204
79
NSD205
79
NSD206
79
NSD3439
36
NSD3440
36
NSD457
48
NSD458
48
NSD459
48
NSD6178
38
NSD6179
38
NSD6180
78
NSD6181·
·78
NSE170
77
NSE171
78
NSE180
37
NSE181
38
NSE457
48
NSE458
48
NSE459
48
NSP5191
2E
NSP5192
2E
NSP5193
3E
NSP5194
3E
NSP5195
3E
18

(Continued)

NSP520
NSP521
NSP575
NSP576
NSP577
NSP578
NSP579
NSP580
NSP581
NSP582
NSP585
NSP586
NSP587
NSP588
NSP589
NSP590
NSP595
NSP596
NSP597
NSP5974
NSP5975
NSP5976
NSP5977
NSP5978
NSP5979
NSP598
NSP5980
NSP5981
NSP5982
NSP5983
NSP5984
NSP5985
NSP599
NSP600
NSP601
NSP602
NSP695
NSP695A
NSP696
NSP696A
NSP697
NSP697A
NSP698
NSP698A
NSP699
NSP699A
NSP700
NSP700A
NSP701
NSP105
NSP2010

2C
2C
2C
3C
2C
3C
2C
3C
2C
3C
2E
3E
2E
3E
2E
3E
2E
3E
2E
5A
5A
5A
4A
4A
4A
3E
5A
5A
5A
4A
4A
4A
2E
3E
4A
5A
2J
2J
3J
3J
2J
2J
3J
3J
2J
2J
3J
3J
2J
5A
5A

National Semiconductor Power Transistor Listing

PART
NUMBER

PROCESS

NSP2011
NSP2020
NSP2021
NSP20S
NSP2090
NSP2091
NSP2092
NSP2093
NSP2100
NSP2101
NSP2102
NSP2103
NSP2370
NSP2480
NSP2481
NSP2482
NSP2483
NSP2490
NSP2491
NSP2S20
NSP29SS
NSP30S4
NSP30S5
NSP370
NSP371
NSP3740
NSP3741
NSP41
NSP41A
NSP41B
NSP41C
NSP42
NSP42A
NSP42B
NSP42C
NSP4918
NSP4919
NSP4920
NSP4921
NSP4922
NSP4923
NSP5190
NSP702
TIP110
TlP111
TIP112
TIP115
TIP116
TIP117
T1P120
TIP130

SA
4A
4A
4A
3J
3J
3J
3J
2J
2J
2J
2J
3C
4A
4A
4A
4A
3E
3E
2C
SA
2E
4A
3C
3C
3C
3C
2E
2E
2E
2E
3E
3E
3E
3E
3C
3C
3C
2C
2C
2C
2E
3J
2J
2J
2J
3J
3J
3J
2J
4K

PART
NUMBER,
TIP131
TIP132
TlP13S
TIP136
TlP137
TIP29
TIP29A
TIP298
TIP29C
TIP30
TIP30A
TIP308
TIP30C
TIP31
TIP31A
TIP318
TIP31C
TIP32
TIP32A
TIP328
TIP32C
TIP41
TIP41A
T1P418
TIP41C
TIP42
TIP42A
T1P42B
TIP42C
TIP61
TIP61A
TIP618
T1P61C
T1P62
T1P62A
TIP62B
TIP62C
2N6386
2N6037
2N6038
2N6039
2N6034
2N603S
2N6036
2N60S5
2N6056
2N60S7
2N60S8
2N60S9
2N6300
2N6301

PART
NUMBER

PROCESS
4K
4K
SK
SK
SK
2C
2C
2C
2C
3C
3C
3C
3C
2C
2C
2C
2C
3C
3C
3C
3C
4A
4A
4A
4A
SA
SA
SA
SA
2C
2C
2C
2C
3C
3C
3C
3C
2J
2J
2J
2J
3J
3J
3J
4K
4K
4K
4K
4K
4K
4K

2N60S0
2N60S1
2N60S2
2N60S3
2N60S4
2N6298
2N6299
2NS6SS
2NS6S6
2NS657
2N4921
2N4922
2N4923
2N4918
2N4919
2N4920
2NS293
2NS294
2NS29S
2NS296
2NS297
2NS298
2N6121
2N6122
2N6123
2N6129
2N6130
2N6131
2N6288
2N6289
2N6290
2N6291
2N6292
2N6293
2N6124
2N612S
2N6126
2N6132
2N6133
2N6134
2N6106
2N6107
2N6108
2N6109
2N6110
2N6111
2N3055
2NS873
2NS874
2NS877
2NS878
19

PROCESS
SK
SK
SK
SK
SK
SK
SK
36
36
36
2C
2C
2C
3C
3C
3C
2E
2E
2E
'2E
2E
2E
2E
2E
2E
2E
2E
2E
2E
2E
2E
2E
2E
2E
3E
3E
3E
3E
3E
3E
SA
SA
SA
SA
5A
5A
4A'
4A
4A
4A
4A

(Continued)

PART
NUMBER
2NS871
2N5872
2NS87S
2N5876
2N6S94
2N3713
2N3714
2N371S
2N3716
2N5632
2NS633
2NS634
2NS7S8,
2NS7S9
2NS760
2N6253
2N62S4
2N6371
2N3789
2N3790
2N3791
2N3792
2N6226
2N6227
2N6228
2N6229
2N6230
2N6231
2NS629
2NS630
2N5631
2N57S8
2NS7S9
2NS760
2N5881
2NS882
2N62S7
2N62S8
2NS879
2NS880
2N6029
2N6030
2N6031

PROCESS
SA
SA
SA
SA
SA
48
48
48
48
48
48
48
48
48
48
48
48
48
S8
S8
S8
S8
S8
S8
S8
S8
S8
58
. 4C
4C
4C
4C
4C
4C
4C
4C
4C
4C
SC
SC
SC
SC

5C

NPN
92PE37 A thru 92PE37C
PNP
92PE77 A thru 92PE77C

92-PLUS

Complementary plastic power transistors employing double
diffused planar structures and constructed with National's
revolutionary "Epoxy B Concept" for exceptional reliability.

--

Complementary
NPN/PNP Audio
Power Transistors

:r:r
.... ....
Cc

Features

(0(0

• High VCE ratings:
92PE37A, 77A - 45 V min. VCEO
92PE37B, 77B - 60 V min. VCEO
92PE37C, 77C - 80 V min. VCEO

NN
-C-C

• Exceptional power dissipation capability:
PTOT P = 1.2 Watts @ T A = 25°C

mm
.....
~
..........

00

Center Collector
Package 90

Maximum Ratings
92PE37B
92PE77B
60

92PE37C
92PE77C
80

Units

VCEO

92PE37A
92PE77A
45

Collector-Base Voltage

VCS

45

60

80

Voc

Emitter-Base Voltage

VES

5.0

5.0

5.0

Voc

IC

1.0

1.0

1.0

Aoc

ICM

2.0

2.0

2.0

PTOT

0.75
2.5

0.75
2.5

0.75
2.5

Aoc
W
W

Parameter
Collector-Emitter Voltage

Symbol

Collector Current (cont.)
Collector Current
Power Dissipation

(TA = 25°C)
(Tc = 25°C)

Voc

Practical Power Dissipation *

PTOTP

1.2

1.2

1.2

W

Temperature

Tj. Tstg

-55t~ +150

-55 to +150

-55 to +150

°c

liJA
liJC

167
50

167
50

167
50

°C/W
°C/W

Thermal Resistance

* Practical Power Dissipation (i.e., that po)Ner which can be dissipated with the
device installed in a typical manner on a printed circuit board with total copper

Physical Dimensions

run area equal to 1 SQ. in. minimum).

92-PLUS

H

B.OlD
(O.S08I R

Typical Performance Characteristics
Safe Operating Area Curve

.

10

E
,

,

q

=

;

.!:!!.

~~~I

~

~

0

~

o.6

~

• .1

::l
t;

~

1000
COLLECTOR VOLTAGE (Vel - v

I

---,

I \...., I

PLANEr-

-

0.025

(0.&35)
MAX

~~~

f"',..

r-....

•

(:.!!~I-l

['...,

TY'

4

"

2

•

.... ----.,

! ,. . .

~O.050
(4.691-4.445) (12701

SEATING ~ ..Lff-"i-i'-f1-.Jr-+.--+

1.8

~

0.205--0.195
'5.207-4.8&l1

"",1---'/

Thermal Derating Curve

0

il

~
8

NOM

2.'

~ I.'
'" 1.42

I.'

TV'

25

50

75

fOO

AMBIENT TEMPERATURE IT> _ °C

1-3

125

""

150

'.59'

115.081)

---.l

r-

BEfORE
lEAD FINISH

O·~O'~:;~~~~::I ~ ~
TV'

Electrical Characteristics
Parameter

Symbol

Collector-Emitter Sustaining Voltage
Ic = 10 rnA, Ie = 0
92PE37 A, 77 A
92PE37B, 77B
92PE37C, 77C
Collector Cutoff Current
Vce = 60 V, IE = 0
Vee = 80 V, IE = 0
Vee = 100 V, IE = 0

Min;

Max:

Units

BVCEO
45
60
80

V
V
V

Iceo
92PE37A,77A
92PE37B, 77B
92PE37C, 77C

Emitter Cutoff Current
IC = 0, VEe = 5.0 V

lEBO

DC Current Gain
Ie = 50 rnA, VeE = 2.0 V
Ic = 250 rnA, VeE = 2.0 V
Ie = 500 rnA, VeE = 2.0 V

hFE

0.1
0.1
0.1

/lA
/lA
/lA

100

nA

0.5
1.0

V
V

1.5

V

40
40
25

Collector-Emitter Saturation Voltage
Ie = 500 rnA, Ie = 50 rnA
Ic = 1000 rnA, Ie = 100 rnA

VCE(satl

Base·Emitter ON Voltage .
Ie = 1000 mA, VeE = 2.0 V

VBE(on)

Current Gain' Bandwidth Product
Ic =200 rnA, VeE = 5 V, f= 100 MHz

fT

Output Capacitance
Vce = 10V,IE =O,f= 1 MHz

Cob

MHz

50
30

1-4

pF

92PE487 thru 92PE489

-...

92-PLUS

:r
c

Triple diffused planar structures built with National's revolutionary "Epoxy B Concept." Designed to provide exceptional
reliability and performance.

High Voltage
Silicon NPN
Power Transistors
160 - 300 V

Features

<0

N
""0

m
~

(X)

• TV video output

<0

• TV chroma output
Center Collector
Package 90

• Line operated class "A" audio

Maximum Ratings
Parameter

Symbol

92PE487

92PE488

92PE489

Units

Vcs

160

250

300

Voc

Collector-Emitter Voltage

VCEO

160

250

300

VOC

Emitter-Base Voltage

VES

7

7

7

VOC

Ic

0.1

0.1

0.1

Aoc

ICM

0.3

0.3

0.3

Aoc

Is

50

50

50

mAoc

PTOT

0.75
2.5

0.75
2.5

0.75
2.5

W
W

PTOTP

1.2

1.2

1.2

W

Collector-Base Voltage

Collector Current (cont.)
Collector Current
Base Current
Power Dissipation

(TA = 25°C)
(TC = 25°C)

Practical Power Dissipation *
Temperature

Tj. T stg

-55 to +150

-55to +150

-55 to +150

°c

f)JA

71.4
12.5

71.4
12.5

71.4
12.5

°C/W
°C/W

Thermal Resistance

f)JC

..
* Practical Power DISSipation
h.e., that power which can be dissipated with the
..

Physical Dimensions

device installed in' a typical manner on a printed circuit board with total copper
run area equal t,o 1 sq. in. minimum).

92·PLUS
0.020
(O.SUBI R
TV.
.OM

Typical Performance Characteristics
Safe Operating Area Curve

.
~

8

'.1

2

•

il
~

~

=+

Thermal Derating Curve

•

I

I

S"fl10M

•
•

0.01

a.,,,

"

~ ~ ~ . 11Wii
~
I:!!:.---J ~
O.~I.~~~:!::1 ~ IBEFORE
LEAD FINISH

......

TVP

4

'" .........

2

•
COLLECTOR VOLTAGE (Vel - v

25

50

15

100

AMBIENT TEMPERATURE ITI- °c

1-5

125

150
0.055-0.045

TVP

0)

co

L3

0.
N

0)

:::s
.c

...

Electrical Characteristics
Parameter

Symbol

Collector·Emitter Sustaining Voltage
487
IC = 5 mA, IB = 0

.'-

, BVCEO

488
489
Collector Cutoff Current
VCB = 100 V
VCB = 200 V
VCB = 250 V

Min.

Max.

160
250
300

Units
VDC
Voc
Voc

ICBO

487
488
489

Emitter Cutoff Current
VEB = 3 V
DC Current Gain
Ic = 1 rnA, VCE = 10 V
Ic = 10 rnA, VCE = 10 V
Ic = 30 rnA, VCE = 10 V
Collector·Emitter Saturation Voltage
IC = 30 mA,lB = 6 rnA
High Frequency Knee Voltage
IC = 50 rnA

5(')

nA

50

nA

1.0

Voc

lEBO

hFEl
hFE2
hFE3

15
15
30

VCE(sat)
VCEK
typ.15

Collector-Base Junction Capacitance
VCB = 20 V

Ccb

Transition Frequency
Ic=10mA

fT

Voc
3.0
typ.50

1-6

pF
MHz

-CZ

Z-c

-CZ

NPN
PNP

COCO
NN
-C-C
C:C:

92PU01, 92PU01A

92-PLUS

92PU51, 92PU51A

Complementary plastic power transistors employing double
diffused planar structures and constructed with National's
revolutionary "Epoxy B Concept" for exceptional performance and reliability.

010
..........

coco

Complementary NPN/PNP
Silicon Audio Power
Transistors
1.2 Watts

NN

-C-C

C:C:
010
..........

Applications

»»

Class "B" audio outputs/drivers
• General purpose switching and lamp drive' in industrial
and automotive circuits

Maximum Ratings
Symbol

92PUOl
92PU51

92PU01A
92PU51A

Units

Collector-Emitter Voltage

VCEO

30

40

V

Collector-Base Voltage

VCB

40

50

V

Emitter-Base Voltage

VEB

5.0

5.0

V

IC

2.0

2.0

A

PDp *

1.2

1.2

W

Tj, Tstg

-55 to +150

-55 to +150

°c

8JA
8JC

167
50

167
50

°C/W
°C/W

Parameter

Collector Current (cont.)
Power Dissipation (TA = 25° C)
Temperature
Thermal Resistance

'PDP = Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed
circuit board with total copper run area equal to 1.0 in. 2 minimum.

Physical Dimensions

Typical Performance Characteristics

92-PLUS
0.020
(O.SOBI R
TYP

NOM

Safe Operating Area Curve

Thermal Derating Curve
2.0

1.'
~

1.6

"

1.4

~

~

iiiQ

o.

cC

0.4

~

['-.,.

"

•
•

\'i:
2

G

COLLECTOR VOLTAGE ("oIts)

2

,
2

,

25

50

75

100

'" ""

AMBIENT TEMPERATURE fTI-·C

1-7

125

150

Electrical Characteristics
Parameter

....

~~

011)

::)::)
Q.Q.

NN

enen
ZQ.
Q.Z
ZQ.

Collector·Emitter Sustaining Voltage
IC = 10 mA, 18 = 0
92PU01, U51
92PU01,6" U51A
Collector Cutoff Current
VC8 = 40 V, IE = 0
VC8 = 50 V, IE = 0

Symbol

Min.

30
40
0.1
0.1

/lA
/lA

0.1

/lA

55
60,
50
VCE(satl

Base·Emitter ON Voltage
·Ie = 1.0 A, VCE = 1.0 V

VSE(on)

Output Capacitance
Ves=10V,IE=0,f=1 MHz

V
V

hFE

Collector-Emitter Saturation Voltage
Ie = 1.0 A, 18 = 100 mA

Current·Gain Bandwidth 'Product
I!= = 50 mA, VCE = 10 V, f = 20 MHz

Units

ICBO

Emitter Cutoff Current
VE8 = 5.0 V, Ic = 0
DC Current Gain
Ic= 10mA, VCE = 1.0V
Ie = 100 mA, VCE = 1.0 V
Ie = 1000mA, VCE = 1.0 V

Max.

BVCEO

A
?

0.5

V

1.2

V

ft
50

MHz

Cob
30

l·B

pF

"tJZ
Z"tJ
"tJZ

NPN
PNP

92PU05 thru 92PU07

92-PLUS

92PU55 thru 92PU57

Complementary plastic power transistors employing double
diffused planar structures and constructed with National's
revolutionary "Epoxy B Concept" for exceptional reli·
ability.

Complementary
NPN/PNP Audio
Power Transistors

NN
"tJ"tJ

C::c::
CJ10
CJ1CJ1

--

~~
......
Cc

'.2 Watts

COCO

NN
"tJ"tJ

Features
• High VCE ratings

C::C::

92PU05, U55 = 60 V min. VCEO
92PU06, U56 = 80 V min. VCEO
92PU07, U57 = 100 V min. VCEO
• Exceptional power·to·price ratio

CJ10

............

Center Base
Package 91

Maximum Ratings
Parameter

Symbol

92PU05
92PU55

92PU06
92PU56

92PU07
92PU57

Units

Collector· Emitter Voltage

VCEO

60

80

100

Voc

Collector· Base Voltage

VCS

60

80

100

Voc

Emitter·Base Voltage

VES

4.0

4.0

4.0

Voc

Ic

2.0

2.0

2.0

Pop *

1.2

1.2

1.2

Aoc
W

Tj, T stg

-55 to +150

-55 to +150

-55 to +150

°c

eJA
eJC

167
50

167
50

167
50

°C/W
°C/W

Collector Current (cont.)
Power Dissipation (TA = 25°C)
Temperature
Thermal Resistance

*Po p = Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed
circuit board with total capper run area equal to 1.0 in. 2 minimum.

Physical Dimensions

Typical Performance Characteristics

92-PLI,JS
0.020
IO.50B} R
TY'

Safe Operating Area Curve

NOM

Thermal Derating Curve
~

f

a

,
•,

1.

"'.

1.

~

1.4

I.

,
•
o.,

~

~

2

.........

(0.835)

MAX

"-

4

~ ,

.......

2

COLLECTOR VOLTAGE (volts)

COco

25

50

15

100

125

"-

150

AMBIENT TEMPERATURE (T) - °C

0.055-0.045

1·9

Electrical Characteristics
Symbol

Parameter
Coliector·Emitter Sustaining Voltage
Ic = 1.0 mA,lB = 0

Max.

Units

BVCEO
V

60
80
100

92PU05,U55
92PU06, U56
92PU07, U57
Collector Cutoff Current
VCB = 40 V, Ie = 0
VCB = 60 V, IE = 0
VCB=80V,IE=0

Min.

'v
V

ICBO
92PU05, U55
92PU06,U56
92PU07, U57

Emitter Cutoff Current
IC = 0, VEB = 4.0 V

lEBO

DC Current Gain
Ic = 50 rnA, VCE = 1,0 V
Ic = 250 mA, VCE = 1.0 V
Ic = 500 mA, VCE = 1.0 V

hFE

VCElsatl

Base·Emitter ON Voltage
Ic = 250 mA, VCE = 1.0 V'

VBElon)

Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz

Il A
IlA

100

IlA

0.5
0.35

V
V

1.2

V

IlA

80
50
20

Collector· Emitter Saturation Voltage
Ic = 250 mA, IB = 10 mA
Ic = 250 mA, Is = 25 mA

Current Gain Bandwidth Product
Ic = 200 mA, VCE = 5 V, f = 100 MHz

0.1
0.1
0.1

ft
50

MHz

Cob
30

HO

pF

co

N
"tJ

c:

92PU10

~

o

92-PLUS
Triple diffused planar structures built with National's
revolutionary "Epoxy 8 Concept." Designed to provide
exceptional reliability and performance.

High Voltage
Silicon NPN
Power Transistors
300 V

Applications
• TV video output
• TV chroma output
Line operated class "A" audio

Center Base
Package 91

Maximum Ratings
Parameter

Symbol

Rating

Units

Collector-Base Voltage

VCB

300

Voc

Collector-Emitter Voltage

VCEO

300

VOC

VEB

7

VOC
Aoc

Emitter-Base Voltage
Collector Current (cont.)

Ic

0.1

·pop

1.2

W

Ti' Tstg

-55 to +150

o·C

167
50

°CIW
°CIW

Power Dissipation ITA = 25°C)
Temperature
Thermal Resistance

i

OJA
OJC

'PoP = Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed
circuit board with total copper run area equal to 1.0 in. 2 minimum.

Physical Dimensions

Typical Performance Characteristics

92-PLUS
0.020 R
fO.SIII}
TV'
NO.

"'E.

Safe Operating ArB3 Curve

,

Thermal Derating Curve

,

i===

~

.S
4

IDC

,

D

I.........

r-...

•

,

.....

.S
4

,

:30[

""1.'

nil
10

100

COLLECTOR VOL rAGE (volts)

1000

,

25

50

7S

100

'"

AMBIENT TEMPERATURE (T) - ~c

1-11

.........

125

150

Electrical Characteristics
Parameter

Symbol

Collector· Emitter Sustaining Voltage
Ic:; 1 mA, IB = 0

Min.

Max.

Units

BVCEO
300

Collector Cutoff Current
VCB = 200 V

ICBO

Emitter Cutoff Current
VEB '= 6 V

lEBO

DC Current Gain
Ic = 1 mA, VCE

hFEl

= 10 V

VOC
100

nA

100

nA

0.75

VDC

0.85

VDC

3.5

pF

25

DC Current Gain
Ic = 10 mA, VCE

= 10 V

DC Current Gain
Ic = 30 mA, VCE

= 10 V

hFE2
40
hFE3
40

Collector· Emitter Saturation Voltage
.Ic = 30 mA, IB = 3 mA
Base-Emitter On Voltage
Ic = 30mA,

VCE

VCE(satl

= 10 V

VBE(on)

Collector-Base Junction Capacitance
VCB = 20 V

Ccb

;

1-12

co

N

"

c:

92PU45,92PU45A

~

91

92-PLUS

CO
N

Monolithic, double diffused planar power Darlington
structures employing National's "Epoxy S" plastic packaging concept for exceptional reliability in amplifier and
driver applications.

"

c:

NPN Silicon
Power Darlington

~

CJ1

1.0 Watt

»

Features
• Lamp driver
• Digit driver
• Directly compatible with bipolar and MOS lIe drive

Center Base

Package 91

Maximum Ratings
Parameter
Collector-Emitter Voltage

92PU45

92PU45A

VCES

40

50

Voc

50

60

Voc

Collector-Base Voltage

VCB

Emitter-Base Voltage

VEB

Collector Current

.

Symbol

IC

..

Units

12

12

VOC

2.0

2.0 '

Aoc

Power Dissipation (T A = 25° C)

POP

1.0

1.0

W

Temperature

Ti. Tstg

-55 to +150

-55 to +150

°c

OJA

200
62.5

200
62.5

°CIW
°C/W

Thermal Resistance

OJC

'VCES for Darlington structure equivalent to VCEO of output xtr.
**PO P = Practical Power Dissipation. i.e., that power which can be dissipated with the device installed in a typical manner on a printed

circuit board with total copper run area equal to 1.0 in. 2 minimum.

Physical Dimensions

.Typical Performance Characteristics

92-PLUS
0.020 R

10.508'
TYP
NOM

Safe Operating Area Curve

Thermal Derating Curve

•

1

I\.
I\.

1

i

'\.
"\

6

'\.
"\

6

~

4

~

'\.

3

"\

2

I\.

1

'\.

25

COllECTOR VOLTAGE (voltsl

50

75

100

125

AMBIENT TEMPERATURE (T) _·c

1-13

150

«
It)

!

Q.
N

CJ)

Electrical Characteristics
Parameter

Symbol

Collector·Emitter Breakdown Voltage
IC = 1.0 mA, VBE = 0
92PU45
92PU45A

BVCES

Coliector·Base Breakdown Voltage
IC = 100/.lA, IE =0
92PU45
.92PU45A

BVCBO

Emitter·Base Breakdown Voltage
IE=10/.lA"IC=0

BVEBO

Collector Cutoff Current
VCB = 30 V, IE = 0
VCB =40 V,IE =?

Min.

Max.

Units

40
50

VOC
VOC

50
60

VOC
VOC

12

VOC

ICBO
92PU45
92PU45A

Emitter Cutoff Current
VES = 10 V, Ic = 0

lEBO

DC Current Gain
Ic'= 200 mA, VCE = 5.0 V
Ic = 500 mA, VCE = 5.0 V
Ic = 1000 mA, VCE = 5.0 V

hFE

,

Coliector·Emitter Saturation Voltage
IC = 1000 mA, IB = 2 mA
IC = 200 mA, IB = 2 mA

VCE(sat)

Base·Emitter Saturation Voltage
IC = 1000 mA, IB = 2 mA

VBE(sat)

Base·Emitter ON Voltage
IC = 1000 mA, VCE = 5 V

VBE(on)

Small Signal Current Gain
Ic = 200 mA, VCE = 5.0 V, f = 100 MHz

NA
NA

100

/.IA

1.5
1.0

VOC
VOC

2.0

VOC

2.0

VOC

25,000
15,000
4,000

IhFEI
1.0

1-14

100
100

POWER
TRANSISTORS

"'Cz
Z"'C
"'CZ
Zz

NPN
NSDU01, NSDU01A
PNP
NSDU51, NSDU51A

Complementary plastic power transistors employing double
diffused planar structures and constructed with National's
revolutionary "Epoxy B" concept for exceptional performance and reliability.

tntn
Cc
C:c:

010
:-.....

Complementary NPN/PNP
Silicon Audio Power
Transistors
10.0 Watts

Applications
• Class B audio outp)Jts/drivers
• General purpose switching and lamp drive in industrial
and automotive circuits.
E
Package 35

Maximum Ratings
NSDU01
NSDU51

NSDU01A
NSDU51A

Units

.Collector-Emitter Voltage

30

40

V

Collector-Base Voltage

40

50

V

Emitter-Base Voltage

5.0

5.0

V

Collector Current (cant.)

2.0

2.0

A

Power Dissipation

1.75
10

1.75
10

W
W

-55 to +150

-55 to +150

°c

71.4
12.5

71.4
12.5

°C/W
°C/W

Parameter

Symbol

(TA = 25°C)
(Tc = 25°C)

Temperature
Thermal'Resistance

Typical Performance Characteristics

Physical Dimensions
TO-202

0

D.lms

~

I

"

~

I

z
0

i

~

iii

0

i

0.1

Ci
~

~

MAX VCED " 30 V
MAX VCEO = 40 V
ID

,
•

I\.
I\.

'"

I.ZIO
(31l.134)

REF

"\ TTA.

,

"\

I\.

,
rTA{Wlt,hTABJ
1

-

-

"\.
I\.

100

COLLECTOR VOLTAGE Iyolts)

1000

o
o

25

50

'\.

75

180

TEMPERATURE (T) _ °c

125

150

l

~~ ~~_I~~--DDGO

I\.

TA (WIth TAB removed)

.01

1.0

r

Thermal Derating Curve

Safe Operating Area Curve
ID

D.313-O.311
(9414-9.57&)

B'. "-. .
•

<1l--.. .,~'"

I

2-3

~

14311-'.12&)

eCeC
,..,..

Oil)

Electrical Characteristics

::;:)::;:)

Cc

UlUl

Zz

,..,..:

Oil)

::;:)::;:)

Cc

UlUl

Zz
Zo.
o.Z
Zo.

Parameter

Symbol

Coliector·Emitter Sustaining Voltage
Ic = 10 rnA, IB = 0
NSDU01, U51
NSDU01A, U51A

Min.

Max.

Units

BVCEO
30
40

Collector Cutoff Current
VCB = 30 V, IE = 0 NSDU01, NSDU51
VCB = 40 V, IE = 0 NSDU01A, NSDU51A

V
V

ICBO

Emitter Cutoff Current
VEB",5.0V,lc=0
DC Current Gain
IC = 10 rnA, VCE = 1.0 V
Ic = 100 rnA, VCE = 1.0 V
Ic = 1000 rnA, VeE = 1.0 V

0.1
.0.1'

I1A
).IA

0.1

).IA

0.5

V

1.2

V

hFE
55
60
50

Coliector·Emitter Saturation Voltage
Ic= 1.0A,IB = 100mA

VCE(sat)

Base·Emitter ON Voltage
Ic = 1.0 A,VCE = 1.0 V

VBE(on)

Current·Gain Bandwidth Product
I~ = 50 rnA, VCE = 10 V, f= 20 MHz

ft
MHz

50

Output Capacitance
VCB = 10V,IE =O,f= 1 MHz

Cob
pF

30

Physical Dimensions

TO..s Equivalent

Flush Mounting

.....

• .wi-

o

0
=;

rr
-=r""
I

I9=;=;=;=FP-I

TO]

'f--'\

,........1

Ju"

CENTEIILEAD

1

."

Sh....d Tab

l-

~1t.IOS-CI.I35

]"nmL

11]

usa

~

~
o.,,,-u,.

... --.l

,,

/',.....\

II

" .....j

II [Q

~ k-\~:~.:

TYPE U

TVPE T

TYPE N

~a~ig~~;~:il'~~O(i~e~~t¥~;eo~B)~tkohno~rJe~~ aa~J1i~a~T~~t~eg~i~~b~le~~n1fgn~:~~i~a~Ic;,"oSt I~~!en~t~~~~~~tQ~~r m,:~ ~~:r~:~~~s:~:~t~~nf~~

assistance.

'

-

2·4

NPN
NSDU05 thru NSDU07
PN.P
NSDU55 thru NSDU57

POWER
TRANSISTORS

Complementary
NPN/PNP Audio
Power Transistors

ZZ
cnc,n
cc
C:c:

NSDU05, U55 = 60 V min. VCEO
NSDU06, U56 = 80 V min. VCEO
NSDU07, U57 = 100 V min. VCEO

010
~~

• Exceptional power dissipation capability:
E

C

Maximum Ratings
Symbol

NSDU05
NSDU55

NSDU06
NSDU56

NSDU07
NSDU57

Coliector·Emitter Voltage

VCEO

60

80

100

VOC

Coliector·Base Voltage

VCB

60

80

100-

Voc

Emitter·Base Voltage

Units

VEB

4.0

4.0

4.0

VOC

Collector Current (cont.)

IC

2.0

2.0

2.0

Power Dissipation

Po

1.75
10

1.75
10

1.75
10

Aoc
W
W

Tj, Tstg

-55 to +150

-55 to +150

-55 to +150

°c

71.4
12.5

71.4 '
12.5

°C/W
°C/W

(TA = 25°C)
(Tc = 25°C)

Temperature
Thermal .Resistance

71.4
12.5

OJA
OJC

,Typical Performance Characteristics

Physical Dimensions
TO·202

.........

' • .GIIi...../i04J

Safe Operating Area Curve

rt

"'L

Thermal Derating Curve

•

•

I'\.

"- I'\.

B

,
5

'\

•
3

L
.~

'\

I

O.G47-11JIQ

.'\.

o TA(wrthTABremtMd
50

/1.5241
REF

"- I'\.

2, TA (WI?, TAB}

25

...,~

r--/WO-GAIID

".".-,

--j

9-

O.IZI-II.l.1Z

13.251-3.35Jj

DI'

1.210

3D.""
REF

'\ ~AB

B

COLLECTOR VOLTAGE (voltsl

-... ...
Cc

• High VCE ratings

Parameter

010

:T:T

Applications

= 1.75 Watts @ TA = 25

c:c:
U10'1

Complementary plastic power transistors employing double
diffused planar structures and constructed with National's
Revolutionary "Epoxy SU concept for exceptional reliability.

PD

"tJZ
Z"tJ
"tJZ
ZZ
cnc,n
CC

75

100

TEMPERATURE (TI_·C

2·5

125

150

11.II4-UUI
TYP

("\
\

-~

~l
Ff'~

.......".

--uDij
fIUI~-1

-t
0.215-11

, , ,

D.113-11.31l

1.1195-11.

.IS

--.uD1,
17.2311-1

J

~~~

---'!.-~ r:~~::::::1

~ (2.4f3-%. &Dl1

-t...... ,
". .·T

...

---o:1ii)

0.112.4-11.1111
{O.&II1-11.1111
TYP

-~
14153-t.zo1l

- iUl4-1.51il-

.

--f ~

.D85-0.101i

(2.413-1.&111

II D19-O.0U
IOAil-aHOJ

..........

Oll)
:l:l

Cc
Zz

(/)(/)

....

::s::s

.s::..s::.
........

lI)lI)

Oll)
:l:l

CC
ZZ
ZQ.
Q.Z
ZQ.

(/)(/)

Electrical Characteristics
Parameter

Symbol

Collector-Emitter Sustaining Voltage
Ic = 1.0 mA, Is = 0
NSDU05, U55
NSDU06, U56
NSDU07, U57
Collector Cutoff Current
Vcs = 60 V, IE = 0
Vcs = 80 V, IE = 0
Vcs = 100 V, IE = 0

Min.

Max.

Units

BVCEO
60
80
100

V
V
V

IcsO
NSDU05, U55
NSDU06, U56
NSDU07, U57

Emitter Cutoff Current
Ic = 0, VES = 4.0 V

lEBO

DC Current Gain
Ic = 50 mA, VCE = 1.0 V
Ic = 250 mA, VCE = 1.0 V
Ic = 500 mA, VCE = 1.0 V

hFE

VCE(sat)

Base-Emitter ON Voltage
Ic = 250 rnA, VCE = 1.0 V

VSE(on)

Output Capacitance
VCB=10V,IE=O,f=1 MHz

p.A
p.A
p.A

100

p.A

0.5
0.35

V
V

1.2

V

80
50
20

Collector-Emitter Saturation Voltage
Ic = 250 rnA, Is = 10 rnA
Ic = 250 rnA, Is = 25 rnA

Current Gain Bandwidth Product
IC = 200 rnA, VCE = 5 V, f = 100 MHz

0_1
0.1
0.1

ft
MHz

50
Cob
30

pF

Physical Dimensions
TO·5 Equivalent

Flush Mounting
0.010

.~~-

o

o 1

Sheered Tab

-

~D.ll1fi-o'135

1::=,=-==-=lJ" ""'L

J
TYPE U

TYPE T

TYPE N

National Semiconductor Corporation offers a wide variety of tab/lead configurations. These standard types may be ordered as shown or
in combit;1ation (i.e., Type NU). Should an application require a configuration not shown, contact your NS sales representative for

assistance.

2-6

z
en
c

,.

NSDU45,NSDU45A

POWER
TRANSISTORS

c:

9'
z

Monolithic, double diffused planar power Darlington
structures employing National's "Epoxy B" plastic packaging
concept for exceptional reliability in amplifier and driver
appl ications.

en
c

,.

NPN Silicon
Power Darlington

c:

10.0 Watts

0'1

»

E
Package 35

Maximum Ratings
Parameter

Symbol

NSDU45

NSDU45A

Units

Collector-Emitter Voltage

40

50

Voc

Collector-Base Voltage

50

60

Voc

Emitter-Base Voltage

12

12

Voc

Collector Current

2.0

2.0

Aoc

1.75
10

1.75
10

W
W

-55 to +150

-55 to +150

°c

71.4
12.5

71.4
12.5

°CIW
°CIW

Power Dissipation

(TA = 25°C)
(Tc = 25°C)

Temperature
Thermal Resistance

• VCES for Oarlington structure equivalent to VCEO of output xtr.

Typical Performance Characteristics

Physical Dimensions

r-·

TO·202

!4.311-4.826)

Safe Operating Area Curve

Thermal Derating Cu rve
D

9

,•

I\.
'\

1.210
(lll.1141

'\

•
•

R"

" " TTAB

"

'\

zrTA

.... II

'\.

3

'\

(I'll!.!!

I\.

1
o TA(WlthTABremoved

25
COLLECTOR VOLTAGE (volts)

50

_'\.

75

100

TEMPERATURE (T) _ °C

125

150

~~~~
0313-0.311
(9AJ4-!.5161

~
UI81O-1I.7111

TVP

0.195-0.205

11001B_D026

---i~(OA8l-(lQiDI

D.DII~.ID5

12.413-UIi7)

14.853-52071

g'U~1--""-""
51_U'"
2-7

Electrical Characteristics
Parameter

Min.

Symbol

Collector-Emitter Breakdown Voltage
le=1.0mA,VBE=0
NSDU45
NSDU45A

BVCES

Collector-Base Breakdown Voltage
Ie = 100/lA, IE = 0
NSDU45
NSDU45A

BVCBO

Emitter-Base Breakdown Voltage
IE =£ 10/lA, Ie = 0

BVEBO

Collector Cutoff Current
VeB = 30 V, IE = 0
VeB = 40 V, IE = 0

Max.

Units

40
50

Voe
Voe

50

60

VOC
Voe

12

Voe

ICBO
NSDU45
NSDU45A

0.1
0.1

Emitter Cutoff Current
VEB = 10 V, Ie = 0

lEBO

100

DC Current Gain
Ie = 200 rnA, VeE = 5.0 V
Ie = 500 rnA, VeE = 5.0 V
Ie = 1000 rnA, VCE = 5.0 V

25,000
15,000
4,000

Collector-Emitter Saturation Voltage
Ie = 1000 rnA, IB = 2 rnA
Ie = 200 rnA, IB = 2 rnA

VeE(satl

Base-Emitter Saturation Voltage
IC = 1000 rnA, IB = 2 rnA

VBE(satl

Base-Emitter ON Voltage
Ie = 1000 inA, VeE = 5 V

VBE(on)

150,000

1.5

Small Signal Current Gain
Ie = 200 rnA, VCE = 5.0 V, f = 100 MHz

1.0

Voe
VOC

2.0

Voe

2.0

Voe

1.0

Physical Dimensions
Flush Mounting

TO-5 Equivalent

o.UIIJ

o

":.~-

o

Sheared Tab

r-

. "'. . . nJ

jUJ

J'J"rr

--=r""

CENTER LEAD

TYPE U

I I

~

omo .... tI9D

~(1m-12""
TYPE T

TYPE N

~a~~~~i~:ti~~O(I?e~~~~ieo~~)~t~ohnO~:Je~~ aa~~fi~a~T~i~%g~lr~b~e~gn~?;~::~i~~i~Si I~~;:n~t~~~~~~t~fo~rm~~ ~a~~r~:~~~s:~:~t~~nf~~

assistance.

2-8

POWER
,TRANSISTORS

NSD3439,NSD3440

NPN Silicon power transistors designed to economically
replace the popular 2N3439/2N3440. These plastic packaged,
triple diffused, planar devices incorporate National's revolutionary "Epoxy S" concept to provide exceptional reliability.

NPN Silicon
Power Transistors
250 - 350 Volts

Applications
• Audio, video and differential amplifiers
• High Voltage, low current inverters
• Switching and series pass regulators
E

Maximum Ratings
Parameter

Symbol

NSD3439

Collector-Emitter Voltage

NSD3440

Units
V

VCEO

350

250

Collector-Base Voltage

VCB

450

300

V

Emitter-Base Voltage

VEB

7

7

V

Po

1.75
10.0

1.75
10.0

W
W

Tj, Tstg

-55 to +150

-55 to +150

°c

,Collector Current (cont.)
Power Dissipation

A

Ic

(T A = 25°C)
(Tc = 25°C)

Temperature

Physical Dimensions

Typical Performance Characteristics

TO-202

r

·,n...., ..

14.311-4 WI

Thermal Derating Curve

Safe Operating Area Curve
10

"- '\
"-

'\ \.'AS
'\

'\
'\

fTA(wiib~
1

o fA (with TAB remClV1!d
D

25

58

75

tOO

"--,

125

1I.041-0.04!1

(1.1P-1~~

~

---l

15lJ
---'D.lll-Gln

COLLECTOR VOLTAGE twolts)

TEMPERATURE (TI- "c

--11t--~J

~
~Oy~'D-Q.1l1l

0.1IS5-D.105

D.115-G.105

iliil=iiiiJ

0.1119-0026

14.953-5.2011

19A74-1.5711

~1-""~'""
g">"_U'
2·9

0
'IIit
'IIit
C'?
C

en

Z
0)

Electrical Characteristics
Parameter

Symbol

Collector-Emitter Sustaining Voltage
Ic = 10 mA
3439
3440
Collector Cutoff Current
VCE=300V,ls=0
VCE =2·-V, Is =0

3439
3440

en

Collector Cutoff Current
VCE = 450 V, VSE(off) = 1.5 V
VCE = 300 V, VSE(off) = 1.5 V

3439
3440

Z

.Units

Max.

BVCEO

C'?
'IIit
C'?

0

Min.

350
250

V
V

ICEO
20
50

/lA
/lA

500
500

/lA
/lA

20

/lA

,
ICEX

Emitter Cutoff Current
VES = 6 V, Ic = 0

IESO

DC Current Gain
Ic = 2 mA, VCE = 10 V
Ic=20mA,VCE=10V

hFE
30
40

Collector-Emitter Saturation Voltage
Ie = 50 mA, Is = 10 mA

VCE(satl

Base-Emitter Saturation Voltage
le=50mA,ls=10mA

VSE(sat)

160
0.5

V

1.3

Gain-Bandwidth Product
le=10mA,VCE=10V

"

V

ft
15

Output Capacitance
VCS = 10V, IE =O,f= 1 MHz

Cob

Input Capacitance
VES = 5 V, Ic = 0, f = 1 MHz

Cib

MHz
20

pF

75

pF

Physical Dimensions
She.red Tab

TO-5 Equivalent.

o

~J ~

0

1,·,,"'5-0'35

"l

,"" .....,
\

TYPE U

~-

J-L~

1]

J

TYPE N

Flush

.....

Mo~nting

D.Z50

~

rI6.35011,o.762-1.2101

REF~

IICZr ~
TYPE T

National Semiconductor Corporation offers a wide variety of tab/lead configurations. These standard types may be ordered as shown or
in combination (i.e., Type NU). Should an application require a configuration not shown, contact your NS_sales representative for

assistance.

2-10

POWER
TRA.NSISTORS

NPN
NSD102 thru NSD106
PNP
NSD202 thru NSD206

Complementary plastic power transistors designed for medium
power applications in consumer and industrial sockets. These
products feature planar double diffused structures packaged
using National's revolutionary "Epoxy B" concept to provide
exceptional performance and reliability.

Complementary
NPN/PNP
Silicon Power
Transistors
10 Watts

Applications
• Low level audio outputs and drivers
• General purpose switching
E
Package 35

Maximum Ratings
Symbol

NSD102,103
NSD202,203

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

,VCB

Emitter-Base Voltage

Parameter

NSD104,105
NSD204,205

NSD106
NSD206

Units

45

80

100

Voc

60

100

140

Voc

VEB

5

7

7

VOC

IC

1.5

1.0

1.0

Aoc

Po

1.75
1Q

1.75
10

1.75
10

W
W

Tj' Tstg

-55 to +150

-55 to +150

-55 to +150

°c

()JA
()JC

71.4
12.5

71.4
12.5

'71.4
12.5

°C/W
°C/W

Collector Current (cont.)
Power Dissipation

(T A = 25°C)
(TC = 25°C)

Temperature
Thermal Resistance

Physical Dimensions

Typical Performance Characteristics

TO-202
0360-0.4011

-""
~~
r'~~:::~:'
~.l
IT

....-"" I-~.,..-,.. ,,~
:------1

!6.D!I&-UII4I

Thermal Derating Curve

Safe Operating Area Curve
0

•

"\

B

UIO

I\.
"\ rZ'"A •

•,

la.loU)

REF

I\.

3

15

100

TEMPERATURE (T) - ·C

2-11

'!

0410-0 .5211
112.192-1
---uoil

---t
or- '" -t
~+..j ""'-T
"A

,'-\
\

lI.215-8.315

)

(7.231-1
---:ooil

-~

'"

'\.
_"\

o TA(WlthTABremovtdl
50

N

{U241

"\

I

25

6.121-11.132
IJ.Z61-3.3531

L

'\.

2rTA(Wlj!!!
COLLEI:TOR VOLTAGE (roilS)

L

I'\.

1

9-

.1.

tu.D411

0.095-0.

J(2413-2

125

150

0041-0.041

,.....-u""
TV'

~

0024-002.

.

f- "T'i'P.."...111'

_~Il
11.313-0317

I-~,-

14.953-52011

II 0.1119-01126
t-- (DAIl-USa)

0 D95_0.IOS--l

All-lil71

Electrical Characteristics

=

Min.

Symbol

Parameter
Collector· Emitter Sustaining Voltage
Ic= 10mA,IB =0
102,202,103,203
104,204,105,205
106,206
Collector Cutoff Current
Vce.= rated
Emitter Cutoff Current
VEe = rated
DC Current Gain
Ic = 10 mA, VCE = 5 V
102,202
103,203
104,204,105,205,106,206
DC Current Gain
Ic = 100 mA, VCE = 5 V
102,202
103,203
104,204
105,205
106,206
DC Current Gain
Ic= 500mA. VCE = 5V
102,202
103,203
106,206
DC Current Gain
Ic = 1000mA, VCE = 5V
102,202
103,203
104, 204, 105, 205
Emitter
Saturation Voltage
Collector·
Ic=100mA,le=10mA
Coliector·Emitter Saturation Voltage
IC = 500 mA, Ie = 50 mA
102, 103, 202, 203
104,105,106,204,205,206
Base-Emitter Saturation Voltage
Ic 100 mA, IB 10 mA
Ic = 500 mA, Ie = 50 mA
Collector Output Capacitance
Vce=10V
Gain Bandwidth Product
Ic = 50 mA, VCE = 10 V, f = 10.MHz

Units

Max.

BVCEO
45

VOC
VOC
VOC

80
100
ICBO
0.1

p.A

0.1

p.A

lEBO

40
50
20

50
120
50
120
50

150
360

150
360
150

40
50
25

25
30
10
VCE(satll
0.2

VOC

0.4
0.5

VOC
VOC

0.9
1.2

VOC
Voc

30

pF

VCElsat)2

VBElsat)

=

MHz

60

Physical Dimensions

,...

TO·S Equivalent

o

Flush Mounting

".mi'EF

o

..,

TYPE U

Sheared Tab

TYPE T

TYPE N

rna~ig~a~i~:tr~~on~e~~t~~ieo~B)~t~ohno~tJe~~ aa~J~~a~~~~~8~~~~b~e~gn1~gnJ:~~i~~ic:.r;:i I~~:n~t~~~~~ttVo~r m,:~ ~~:r~:~~:s:~:!\y:nf~~

assistance.

2·12

POWER
TRANSISTORS

NSD131 thru NSD135

z
en
....c

....w

:;:
...
C

Triple diffused planar structures built with,National's revolutionary "Epoxy B" concept. Designed to provide exceptional
reliability and performance.

z
en
....c

High Voltage
Silicon NPN
Power Transistors
250 -375 V

Applications

w

U1

• TV video output
• TV chroma output
• Line operated class "A" audio

E
Package 35

Maximum Ratings
, Parameter

Symbol

NSD131
NSD132

NSD133
NSD134

NSD135

Units

Collector-Base Voltage

VCB

250

300

375

Voc

Collector-Emitter Voltage

VCEO

250

300

375

VOC

Emitter-Base Voltage

VEB

7

7

7

VOC

Collector Current (cont.)

Ic

0.1

0.1

0.1

Aoc

Power Dissipation (TA = 25°C)
(Tc = 25°C)

Po

1.15
10

1.75
10

1.75
10

W
W

Tj' Tstg

-55 to +150

-55 to +150

-55 to +150

°c

OJA
OJC

71.4
12.5

71.4
12.5

71.4
12.5

°CIW

Temperature
Thermal Resistance

Typical Performance Characteristics

Physical Dimensions
TO-202

1.0_

Safe Operating Area Curve

1i

1

I '01l1li"•
~

~u ~OI~~lt~~I~.11
MAX BVCEO = 258 V

MAX BVCE'O = 'jail v

9.001 ~J.....1..LLJ.",·llf,::-·A_XB~'V.I:CE;.:"'~~3~'7'..,,5V....J.JWUUJJJj
1.0
10
100
1000

. COLLECTOR VOLTAGE (volts)

Thermal Derating Cu rYe
10

B

I

I\.
'\

~

1.210

(30.7341

!'I,.

RE'

'\. TTAB

'\.

Z

Q

~

'\

~

'\.

~

~

FTAlwi1hTABI

-

o TA (with TAB removed)
o
25
50
15

'\

I\.

'\.

100

TEMPERATURE ITI _ °C

125

150

,~~ ~

If---i-+-+,-,,-_
UJ3-U17

(lAl4-I,5181

~"l--""-""
g""'-"""
2-13

°C!W

It)
C")

C
en
z

Electrical Characteristics
Parameter

Symbol
BVCEO

....c::s

Collector-Emitter Sustaining Voltage
Ic = 5 rnA, IB = 0
131,132
133, 134
135

,...

Collector Cutoff Current
VCB = 150 V

ICBO

en

Emitter Cutoff Current
VEB = 6 V

lEBO

....
,...

C")

c

z

Min.

<-

Max_

250
300
375

DC Current Gain
IC = 1 rnA, VCE = 10 V

Units

VOC
VOC
VOC
100

p.A

100

p.A

15

DC Current Gain
IC=10mA,VCE=10V
131,133
132,134,135

15
30

131,133,135
132, 134

30
60

DC Current Gain
Ic = 30 rnA, VCE = 10 V

Collector-Emitter Saturation Voltage
Ic = 20 mA, IB = 2 mA

VCE(sat)

Emitter-Base Saturation Voltage
IC = 20 mA,lB = 2 rnA

VBE(sat)

Collector-Base Junction Capacitance
VCB = 20 V

90,
180
1_0

Voc

0_85

Voc

3.0

pF

Ccb

Physical Dimensions
TO..s Equivalent

Flush Mounting

Sheared Tab

o

TVPE U

TYPE T

TYPE N

National Semiconductor Corporation offers a wide variety of tab/lead configurations. These standard types may be ordered as shown or
in combination O.e., Type NUl. Should an application require a configuration not shown. contact your NS sales representative for

assistance.

2-14

POWER
TRANSISTORS

NPN
NSD6178, NSD6179
PNP
NSD6180, NSD6181

Complementary double diffused planar transistors designed
and manufactured with National's revolutionary "Epoxy B"
concept. These devices are designed to replace the 2N2102,
2N6178, 2N6179 and the 2N4036, 2N6180, 2N6181 while
providing superior reliability and free air power handling
capability.

Silicon Complementary
NPN/PNP Power
Transistors
2 Amperes

Applications
• Audio driver and output pairs
• I ndustrial switches
• I nverterslconverters

E
\ Package 35

Maximum Ratings
Parameter

Svmbol

NSD6178
NSD6180

VeB

100

75

V

VeEO

75

50

V

VEB

5

5

V

Ie

2

2

A

Po

1.75
10.0

1.75
10.0

W
W

Tj, Tstg

-55 to +150

-55 to +150

°c

Coliector·Base Voltage
\

Coliector·Emitter Voltage
Emitter·Base Voltage
Collector' Current
Power Dissipation

(TA = 25°C)
(Te = 25°C)

Temperature

NSD6179
NSD6181

Typical Performance Characteristics

Units

Physical Dimensions
TO·202

Safe Operating Area Curve

Thermal Derating Curve
10

,6
5

1

-~'~ "'5-D."~ r':~~:::::'

~

'"L'IIon)

."t,._.""
,,,

"" ,AS
"
""
rTA1jb,!!!
"

II\..

fA (with TAB removed)
25
50
15

100

TEMPERATURE tTl _ °C

125

-"

-to

IDAI6-ll.S2D
(lZI91-132081

13.251-3.3531

I\..

"
COLLECTOR VOLTAGE (volts)

I

.".-112"

"T'K-II'~' ~ ~::l'-'"''

~ ~ T
T-4I-~
r- ~~~,a-aJ111

(1.1114-1;~

0.195-11.211&

150

l!--o,m-oIlZ&

DOSS-e,IDS---l

(2.413-Z.&67)

l-- (UiJ-UD1)

0.313-un

--iUI4-9.51i.-

..-

~
'_~ '''''-I.''''
2-15

DOliS-OMIi

f041J-GWlI

0) .....

r--co
..........
coco

cc

CI)CI)

zz

ale)

r--co
..........

coco

cc
CI)CI)

zz

za.
a.z
zc.

Electrical Characteristics
r
Min.

Symbol

Parameter.
Collector-Emitter Sustaining Voltage
Ic = 10 mA
6178,6180
6179,6181

BVCEO

Collector Cutoff Current
6178,6180
VCE = 60 V, Is = 0
6179,6181
VCE = 45 V, Is = 0

ICEO

Collector Cutoff Current
6178,6180
Vcs = 80 V, IE = 0
6179,6181
Vcs = 60 V, IE = 0

Icso

Emitter Cutoff Current
VES = 5 V, IC =0

IESO

Units

Max.

V

75
50

DC Current Gain
Ic = 50 mA, V CE = 2 V
Ic = 500 mA, VCE = 2 V
Ic = 1000 mA, VCE = 2 V'

V

30
40
10

Collector-Emitter Saturation Voltage
Ic = 500 mA, Is = 50 mA

VCElsat)

Base-Emitter Saturation Voltage
Ic = 500 mA, Is = 50 mA

VBE(sati

,

Output Capacitance
Vcs = 10 V, f = 1 MHz
Gain Bandwidth Product
VCE = 4 V, IC = 50 mA
Second Breakdown Collector Current
VeE = 50 V, t = 1.0 s

1.0
1.0

mA
mA

0.5
0.5

mA
mA

0.1

mA

250

0.5

V

1.2

V

30.

pF

50

MHz

70

mA

ISIB

Physical Dimensions
TO·5 Equivalent

Flush Mounting

....
u.:t-

o

0

T,ol
],.,nr

-=r""

CENTER LEAD

TYPE U

~-

1

Sheared Tab

I

IIO~~1511~

jU'''L

1]

t-"'\
\ ~~ I

I
I

oJ

,

I 1

--l

111170-111190
t---ii1H-iiii1

TYPE T

TYPE N

National Semiconductor Corporation offers a wide variety of tab/lead configurations. These standard types may be ordered as shown or
in ~ombination (i.e., Type NUL Should an application require a configuration not shown, contact your NS sales represflntative for

assistance.

2·16

POWER
TRANSISTORS

"'Oz
Z"'O
"'OZ
Zz

NPN
NSE180, NSE181
PNP
NSE170, NSE171

cncn
mm
..........
...... 0)

00

~

Double diffused planar power transistors designed with
National's revolutionary "Epoxy 8" concept to provide
exceptional reliability.

Complementary
Silicon Power
Transistors
10_0 Watts

Applications

Zz

cncn
mm
..........
...... 0)
..........

• Audio output and/or driver
• High frequency inverters/converters
• Series, shunt and switching regulators

B
C

E

CENTER COLLECTOR
Package 36

Maximum Ratings
Parameter

NSE180
NSE170

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current

NSE181
NSE171

Units

VCB

60

80

V

VCEO

40

60

V

5

5

V

VEB
Ic

3

3

A

Power Dissipation (T A = 25° C)
(T c = 25°C)

Tj. Tstg

1.75
10.0

1.75
10.0

W
W

Temperature

Tj. Tstg

-55 to +150

-55 to +150

°c

(JJA
(JJC

71.4
12.5

71.4
12.5

°CIW
°c/w

Thermal Resistance

Typical Performance Characteristics

Physical Dimensions
TO-202

Safe Operating Area Curve

Thermal Derating Curve

ID "'-"'"I<'r\.-,--r-.,.---r---,
'~~~,~-+--+--r-1
'~~~r\..-+--+--r-~
Jr--+-~~r--+-+--1

6

"

TTA'+--+--j

5~~-+--+"~+--+-~

4~~-4--+-~~--r-~
3~~-4--+--+r\.~r-~

"

Z[:::T~
1
'-

1.0

ID

IOU

COllECTOR VOLTAGE Ivnltsl

~

o TA (with TAB removed}

lOUD

o

25

58

15

100

TEMPERATURE ITI _

2-17

°c

125

'\.
150

~

........
........
ww

en ......

Electrical Characteristics

U)U)

zz

66
en
......
........
Ww
U)U)

Zz

zc..
c..z
za,.

Parameter

Symbol

Collector· Emitter Sustaining Voltage
Ic = 10 rnA, Is = 0
NSE170, 180
NSE171,181

BVCEO

Collector Cutoff Current
NSE170, 180
Vcs = 60 V, IE = 0
NSE171,181
Vcs = 80 V, IE = 0

Icso

Max.

Min.

Units

V

40
60

V

,

0.1
0.1

Emitter Cutoff Current
VSE = 5.0 V,IC =0

IESO

DC Current Gain
Ic = 100 rnA, VCE = 1.0 V
Ic = 500 rnA, VCE = 1.0 V
I C = 1.5 A, V CE = 1.0 V

liFE

0.1
250'

50
30
12

Collector-Emitter Saturation Voltage
Ic = 500 rnA, IS = 50 mA
Ic = 1.5 A, Is = 150 rnA

VCElsat)

8ase-Emitter Saturation Voltage
Ic= 1.5A,ls = 150mA

VSElsatl

Base-Emitter ON Voltage
Ic = 500 rnA, VCE = 1.0 V

VSElon)

Gain Bandwidth Product

0.3

V

0.9

V

1.5

V

1.2

V

ft
MHz

50

Ic = 100 rnA, VCE = 10 V, f = 10 MHz

Physical Dimensions
Flush Mounting

TO·5 Equivalent

""

o

o

...,
o",-o ..

I

o~

TILl

0300-0365

~""

~

IT

I

1==-=-=1">"

I

l"':~J
J ..~,

llJ

\~j

I I

tENTERLEAO

---l

o07ll-OD!lO
1--"178-2216)
TYPE T

TYPE U

TO·66 Equivalent
Il--~
12.194-3.10Z}

Sheared Tab

TYPE N
TYPE J

National Semiconductor Corporation offers a wide variety of tab/lead configurations. These standard types may be ordered as shown or
in combination (i.e .• Type NUl. Should an application require a configuration not shown, contact your NS sales representative for

assistance.

.

2-18

NPN

POWER
TRANSISTORS

D44C1 thru D44C12

PNP

D45C1· thru D45C12

NPN/PNP Complementary Silicon Power Transistors employing Epi-Base Mesa Technology for ideal performance in a
variety of general purpose power and switching applications:

Complementary Silicon
Power Transistors
30 Watts/ 4 Amps

Applications
• Audio Amplifiers
• Series, Shunt, Switching Regulators
• Inverters/Converters
These devices are designed and manufactured using National's
"Epoxy B Concept." They feature exceptional reliability
and are especially suitable for applications involving repeated
on-off operation where wide temperature excursions are
anticipated.

Package 37

TO-220

Maximum Ratings
Parameter

Symbol

Collector· Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
(peak)
Power Dissipation

Cl, C2, C3 C4, CS, C6 C7,

VCB

40

55

VCEO

30

45

ca, C9 Cl~~~12

Units

70

90

V

60

ao

V

VEB

5

V

Ic

4
6

A

30
2

w

(TC = 25°C)
(TA = 25°C)

Thermal Resistance

4.16
62.5

Temperature Range

-65 to +150

Physi~al

Typical Performance Characteristics

Dimensions

TO-220

Safe Operating Area Curve

Thermal Derating Cu rYe
0

0

~
..........

0

",TCAS'

""-

0
TAM81ENT

0
VeE - COLLECTOR TO EMIITER VOLTAGE - V

25

liD

75

...............

100

T - TEMPERATURE _·C

3-3

125

150
a.WlO-D.UO
I2.2U-2.19111

0.175-0.185

~)
0.030-0.055

~

Electrical Characteristics

(Tc = 25°C unless noted)
Symbol

Parameter
Collector· Emitter Sustaining Voltage
Cl, C2, C3
IC = 100 mA, IB = 0
C4,C5,C6
C7,C8,C9
Cl0,Cll,C12

ICES

Emitter Cutoff Current
VEB = 5 V

lEBO

DC Current Gain
VCE = 1 V, Ic = 1 A
DC Current Gain
VCE = 1 V, Ic = 2 A

Max.

Units
V

30
45
60
80

Collector Cutoff Current
VCE = VCB Rated, VEB = 0

DC Current Gain "
VCE = 1 V, Ic = 0.2 A

Min.

VCEO

IlA
10
IlA
100

hFEl
Cl,C4,C7,Cl0
C2, C5, C8, Cll
C3,C6,C9,C12

25
40
40

120

-

hFE2
Cl,C4,C7,Cl0
C2, C5, C8, Cll

-

20

-

hFE3'
C3.C6,C9.C12

Collector Saturation Voltage
Ic=l A,I B =100mA

VCEIS)

Base Saturation Voltage
Ic = 1 A, IB = 100 rnA

VBEIS)

Gain Bandwidth Product
VCE = 4 V, Ic = 20 rnA

fT

-

10
20

V
0.5
V
1.3
MHz
3

,
'

..

3-4

PNP
NSP42
NSP42A
NSP42B
NSP42C

NPN
NSP41
NSP41A
NSP41B
NSP41C

POWER
TRANSISTORS

Complementary Silicon
Power Transistors
50 Watts

Package 37

TO·220

Symbol

NSP41
NSP42

NSP41A
NSP42A

NSP41B
NSP42B

NSP41C
NSP42C

Units

Collector-Base Voltage

Vcs

40

60

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

100

Emitter-Base Voltage

VES

5

V

Collector Current (continuous)
(peak)

Ic

5
7

A

Base Current

Is

3

A

PT

50
2

W

Temperature Range

TJ, TSTG

-65 to +150

°c

Thermal Resistance

OJC
OJA

2.5
62.5

°C/W

(Tc = 25°C)
(T A = 25°C)

TO-220

Safe Operating Area Curve

Thermal Derating Curve
0
0
0

I~

"-

0
0
0

TeASE

"-I~

TAMBIENT

O·\I:-.O.....l....J..J.J...:l~='-L..I:Im~-'-'-:!4"
VeE - COLLECTOR·EMITTER VOLTAGE - V

0

25

V

Physical Dimensions

Typical Performance Characteristics

H

'15

100

T - TEMPERATURE _ °C

3·5

I

"

125

,a::..,a::..
N~

'" '"

NPN/PNP Complementary Silicon Power Transistors. These
devices are designed and manufactured using National's
"Epoxy B Concept." They feature exceptional reliability
and are especially suitable for applications involving repeated
on-off operation where wide operating temperature excursions are anticipated.

Power Dissipation

"tJZ
Z"tJ
"tJZ
ZZ
UHf)
"tJ"tJ

I

150
D.UG-D.11G
12.286-2.7941

L

Electrical Characteristics ITC = 25°C unless hoted)

-r:N'
oq-oq-

c..c..
UHn
ZZ
Zc..
c..Z
Zc..

Parameter

Symbol

Collector-Emitter Sustaining Voltage
Ic = 30 mA, Ie = 0

VCEO

Collector Cutoff Current
VCE=30V,le=0
VCE = 60 V, Ie = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VeE = 0

ICES

Emitter Cutoff Current
VEe = 5 V, Ic = 0

IEeo

DC Current Gain
VCE = 4 V, Ic = 0.3 A
VCE = 4 V, Ic = 3 A

hFE

Base·Emitter "ON" Voltage
VCE = 4 V, Ic = 5 A .
Collector-Emitter Saturation Voltage
Ic = 5 A, Ie = 0.5 A

NSP41
NSP42
Min. Max. 40

30
15

NSP41A
NSP42A
Min. Max.
60

NSP41B
NSP42B
Min. Max.
BO

NSP41C
NSP42C
Min. Max.
100

Units

V

0.7

0.7

-

-

-

-

0.7

0.7

0.4

0.4

0.4

0.4

mA

1

1

1

1

mA

75

30
15

75

30
15

75

30
15

mA

75

VBE(ONI
2

2

2

2

V

1.5

1.5

1.5

1.5

V

VCE(SI

Small Signal Common Emitter Current .
Gain
VCE = 10 V, Ic =0.5A,f= 1 kHz

hfe

Gain Bandwidth Product
VCE = 10 V, Ic = 0.5 A,
f= 1 MHz

fT

20

20

20

20

3

3

3

3

,

,

3-6

MHz

POWER
TRANSISTORS

NPN
NSP520, NSP521
PNP
NSP370, NSP371

NPN/PNP Silicon Power Transistors designed for general
purpose amplifier and switching circuits - recommended
for use in Class B audio amplifier outputs rated from 5 to 20
watts.

Complemantary Silicon
Audio Output
Power Transistors
40 Watts

The devices are designed and manufactured using National's
"Epoxy B Concept" and offer exceptional reliability in any
application which involves repeated temperature excursions
due to self heating effects. The "power cycling" capability
of "Epoxy B Concept" products is unexcelled.

BC
E

Package 37

TO-220

Maximum Ratings
PNP

NPN

Symbol

NSP370

NSP371

NSP520

NSP521

VCB

30

40

30

40'

V

Collector-Emitter Voltage

VCEO

30

40

30

40

V

Emitter-Base Voltage

VEB

4

4

4

4

V

Ic

3
7

4

3
7

4

A

2

2

2

2

Parameter
Collector-Base

Voltag~

Collector Current (continuous)
(peak)

Base Current
Power Dissipation

IB
(T C = 25°C)
(TA = 25°C)

8

Units

8
A

W

40

PT

2

Temperature Range

TJ. TSTG

-65 to +150

°c

Thermal Resistance

8JC
8JA

3_125
62.5

°C/W

Typical Performance Characteristics

Safe Operating Area Curve

1.,_.
::::~~i~~~G':f::~I~~E~MlTfb

• •••••THERMALLYllMITEOfilTc .. n,·!:

-

6O,--,---r----,---.----.-...,
50

..

.c

1""-

3D

'"r-.. "r--.."
TeASE

20
=~~~~::=:n~E~MJJED
······'HEAIIlALLYlIMlTEDfilTC·U·C

-

o.~.,:-.--'---'--'--L...WI..U!..!:--l....f.20:--'-:''
VeE - COLLECTOR-£MlnER VOLTAGE - V

Thermal Derating Curve

Safe Operating Area Curve

VeE - COLLECTOR·EMlnER VOLTAGE - V

3-7

.
TAMBIENT

••

25

so

15

'00

T - TEMPERATURE _·C

'"

'25

'50

,

Electrical Characteristics

ITC = 25°C unless noted)
NSP370
NSP520
Min.
Max.

Symbol

Parameter
Collector-Emitter Sustaining Voltage
Ic = 100 mAo IB = 0

NSP371
NSP521
Min.
Max.

Units

' VCEO

V
30

Collector-Base Cutoff Current
VCB = VCB Rated,lE = 0

ICBO

Emitter-Base Cutoff Current
VEB = 4.0V. Ic = 0

lEBO

DC Current Gain
Ic = 1 A. VCE = 1 V

hFE

40
/lA
100

100

100

100

/lA

25

40
'.,

"

Physical Dimensions
TO-220

n Et
0.395-0.405
(10.033-10.287)

0.100-0.120
(2.549-3.04~)

-.--Lf

r-~~i:::~:)

0.560-0.625
(14.224-15.875) 0.250

6'350)

~
MAX

0.500-0.562
(12.70-14.275)

0.175-0.185

0.139_0.147J
(3.531-3.734)
DIA

RAD

~(4'445-4'699)
(0.762-1.397)

----l

~

-.-, .

1 2:;;3

.

.t

0.045-0.060
(1.143-1.524)
0.020-0.035
(0.508-0.889)
0.090-0.1 io
(2.286-2.794) --

7°
2 PLACES

~I

I

~I

L

f--+L

3-8

0.230-0.270
(5.842-6.858)

~

0.012-0 ..025 _
(0.305-0.635) 0.080-0.115
(2.032"-2.921)

0.030-0.0~5

__

i

--I

--:'

I---

NPN
2N4921 thru 2N4923
NSP4921 thru NSP4923
PNP
2N4918thru 2N4920
NSP4918 thru NSP4920

POWER
TRANSISTORS
NPN/PNP Complementary Silicon Power Transistors
employing Epitaxial Base Mesa Technology. This series is
designed for driver circuits, switching and amplifier appli·
cations.

Complementary
Silicon Power
Transistors
30 Watts
40 Watts

This family features National's TO-126 and TO-220
packages 'which are designed and manufactured using
National's "Epoxy B Concept". The "Epoxy B Concept"
offers exceptional reliability in applications involving
repeated "ON"/"OFF" operation where wide temperature
excursions are anticipated.

thru

thru

2~4923
,.e)'
~

.
c

.

~~

~~ - -

UHO

NN

OW
ZZ

E

.S

cncn

Package 27

Package 38
TO-126

The NSP4918 through NSP4923 series is a direct replacement for the MJE4918 thru MJE4923 series.

NN
ZZ

NSP4918

2N4918

--

::T::T
.., ..,
CC

TO-220

"'0"'0
~~

Maximum Ratings

COCO
~N

PARAMETER

2N4918
2N4921
NSP4918
NSP4921

SYMBOL

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

60

80

V

VCEO

40

60

80

V

5

5

5

V

1.0

1.0

1.0

A

3.0

3.0

3.0

A

1.0

1.0

1.0

A

IC

IB

PT

(TA = 25°C)

..,

ZZ

cncn
"'0"'0
~~

COCO
NN
OW

NSP4918
SERIES

2N4918
SERIES
Power Dissipation (TC = 25°C)

-..+
::T::T
..,
CC

UNITS

40

(Peak)
Base Current

(X)~

2N4920
2N4923
NSP4920
NSP4923

VCB

VEB

Collector Current (Continuous)

2N4919
2N4922
NSP4919
NSP4922

W
W

30

40

1.5

2.0
-65 to +150

Temperature Range

TJ, tSTG

-65 to +150

Thermal Resistance

OJC

4.16

3.125

°CIW

OJA

83_3

62.5

°c/w

°c

Typical Performance Characteristics
Safe Operating Area
NSP4918-23

Safe Operating Area
2N4918-23

Thermal Derating Curve
60

10

5:

50

10

5

5m.~~

l-

.,

ill

"'"""",""'"

2D

2i491BSiRIES
ID

~.SE

~~

0

0

"

50

15

100

2

a:
co

1

",

T - TEMPERATURE (DC)

125

150

i
I
~

DC

0:

co

i

-LIMIT DETERMINED

0.1

-I I II i1lii
1

5

10

I
~

CEO

~

Sm .....

lOOps

'\

2

DCI\
1

ImsA

0.5

-LIMIT DETERMINED
BY BVCEO
0.2 -

I IIIIM

t-

0.1
20

50

100

VCE - COLLECTOR·EMITTER VOLTAGE (VI

3-9

5

I-

~

~

1m.

0.5

0.2

5:
ill

1"- ~

B

NSP4918 SERIES

3D

~

100~s

1

5

10

20

50

100

VCE - COLLECTOR·EMITTER VOLTAGE (VI

('1)0

NN

Electrical Characteristics

(TC = 25°C unless noted)

0)0)

"d'''d'
0..0..

flun

ZZ

....
........

SYMBOL

PARAMETER

:J:J

.r:..r:.

2N4918
2N4921
NSP4918
NSP4921
MIN

Collector· Emitter Sustaining Voltage
IC= 100 mA, Is=

MAX

MIN

MAX

60

40

SVCEO

2N4919
2N4922
NSP4918
NSP4922

2.N4920
2N4923
NSP4920
NSP4923
' MIN

UNITS

MAX

BO

V

a

Collector Cutoff Current
VCE = 1/2 SVCEO Rating, IS =

ICEO

0,5

0,5

0,5

mA

ICEX

0.1

0.1

0,1

mA

0.5

0.5

0.5

ICSO

0.1

0.1

0.1

mA

IESO

1.0

1.0

1.0

mA

a

Collector Cutoff Current
VCE = SVCEO Rating,VSE = 1.5V "qFF",

" "
('1)0

NN

0)0)

"d'''d'

ZZ

....

NN

:J:J

.r:..r:.
........

,...co

N,...

0)0)

"d'''d'

ZZ
NN

Zo..
o..Z
Zo..

VCE = SVCEO Rating, VSE = 1.5V "OFF",
TC = 125°C
Collector Cutoff Current
VCS = VCS Rating, IE =

a

Emitter Cutoff Current
VES = 5V, IC =

a

DC Current Gpin

hFE

IC= 50mA, VCE = lV

40

IC = 500 mA, VCE = lV

20

IC = lA, VCE = 1V

10

Collector· Emitter Saturation Voltage

40

40
100

20

100

10

VCE(S)

0.6

VSE(S)

1.3

20

100

10
0.6

0.6

V

1.3

1.3

V

1,3

1.3

V

IC = lA, IS = 100 mA
Sase·Emitter Saturation Voltage

,

IC= lA, IS= 100 mA
Base·Emitter "ON" Voltage

1.3

VSE(ON)

IC=lA,VCE=lA
Gain Bandwidth Product

3

fT

IC = 250 mA, VCE = 10V,
f = 1 MHz

3·10

3

3

MHz

Typical Performance Characteristics

"'CZ
Z"'C
"'CZ

(Continued)

2N4918 thru 2N4920 and NSP4918 thru NSP4920

1\)1\)

ZZ
Base-Emitter "ON"

Base-Emitter Saturation

Current Gain vs Collector
Current

Voltage vs Collector

Voltage vs Collector
Current

COCO
"I\)
OJ ..

1111
1111
1111

=r=r
-.
-.

Current

-T~

~

I\.

Tc = -40°C

z:

1.4

~

1.2

~

0,8

:::'"

0.6

-

0.4

~c=125°C

1.1.1

~

W

~,

0.1
0.01

i

0.1

ffi

"''''

0.6

''''
-'"
"'=>

0.4

"''''

.;;

TC =25°C

0.01

111111
1111111

~

g

-

CC

:;.."

1\)1\)

111i~

ZZ

~r TC=25°C._
TC= 125°C

~~

COCO
1\)1\)
OW

1111

0.2

0.01

'"'

0.1

~~

Typical Collector
Capacitance vs
Collector-Base Voltage

-"

12

w

COCO
"I\)
OJ ..

--

200
TA =2S'C

=r=r
-.
-.
CC

Z

10

'"G'"

:t

150

~

100

~
8

50

~

1/:.

\

J.~

'\

ZZ
"'C"'C

en en

I.....

~~

,

'T~'125
3 5

0.02

IC - COLLECTOR CURRENT (AI

0.1

1

'"=

"=

2

IC - COLLECTOR CURRENT (AI

Dissipation vs
Case Temperature
40

'"
~

3D

ffi~H+
I"

TO·22O

4.1161°~/W
;§= 20 t-~O.~ ' \
::ti
,1\
'0;
~$

=>",
::;;~

-!

-

-~

iii
>

Gain Bandwidth

11~1I111

~~

O.B

:li

Product vs Collector
Current

11111
,1111
,1111

ffi2:

,

11111
11111
11111

!f= 10
IB

1.2

;::

.'if. ~ -4UoC lIlIUI

,,=
w>
:;jz
==
,,;::
~:!

.mil

Collector-Emitter

"'w

c'"
"''''
"'~

~

Saturation Voltage

:~.=10

1.2

Tc=-4~~1;II
llJll'"

1.4

~

llllV

o

vs Collector Current

"'!:::~

~
;::

i--"

D.2

>

IC - COLLECTOR CURRENT (AI

111111
1111111
111111

VCE = 1V

~
=
>

TC=125°C

lA

~~

Typical Normalized Pulsed

COCO
1\)1\)
OW

MO
('1,1('1,1

Q)Q)

Typical Performance Characteristics

(Continued)

2N4921 thru 2N4923 and NSP4921 thru NSP4923

VV

Q.Q.

UHf)

Typical Normalized Pulsed

ZZ

......

:::::s:::::s

......

~~

Current Gain vs Collector
Current

.,w
.,~
N2

Base-Emitter "ON"
Voltage vs Collector

Voltage

Current

Current

Base-Emitter Saturation

10.~
r-

_

1.4
1.2

YS

Collector

'7:::trm!=::r+Rmlr=++rnflll
f IC" 10
ttlirtt---t-ttiHtttt-Hit1ttt1

IB

TC-125"C

111

3;;;:
«<0

~~

Ow

~~

~~
I

O.S f:r-7'f'l-tHtttt-T_C-f-_-H4+0'ttCttt----t-f+tttttI

0.2 H-++++++IJ--I--f+Htt+lIIII-++++l+ttI
0.1 L....L.LlillUL-W.J.l,lllll.....J....LLL.WlJ
0.01
0.1
10

IC - COLLECTOR CURRENT (AI

I
'"

~'

0.01

'"

0

10

0.1

L-.l....I...L.L1JJ.JJ..-<-.-U.J.J.1JJLI-.l-C.J..UJJ.JJ

0.01

Collector-Emitter

Gain Bandwidth
Product vs Collector
Current

10

0.1

IC - COLLECTOR CURRENT (AI

Saturation Voltage
vs Collector Current

0.2 f--H-+tHtH-,--f-tt-liHtt--++t+ttttl

;::
0L-J..J..J.WJJl......J....J..l-U-,,"---'-...u.u.=

IC - COLLECTOR CURRENT (AI.

Collector-Base Capacitance

vs Collector-Base Voltage

u

z

5

150

t--t-Hc-ic-i-t-j--j--t---t--t-I

:3
~

100

~I\'++-t--t--f-+-+-t-H~--f

SO

t--t-I'-p......;;t::t-+-+-t-HH--f

;0

:§

~

.,I

0.02

0.1

1

.,=

10

2

IC - COLLECTOR CURRENT (AI

Maximum Power

Dissipation vs Case

Physical Dimensions
TO-126

,'O.~ik+l\*+i-H­
]'.1\

0,395-0.405

(10.IlJJ_1D.281l._ ......

0.100-0.120

12.540-3.0481

~

0.148-0.150

,::::=:::~-\.."'0
:JJ81"i:-'~0.4J5
1"

~11.(49)

m--::r,.,,, -.::t
t

123

O~-L~~J-~-L~~~
so
o
100
lS0
TC - CASE TEMPERATURE rCI

'."'-'.655

~ ~ 1"·159-2.4131

'.091-0.091
(2olI1-2A64)

Jrrii
lJL

16 6
. '"

--II- '.'''-'.'25

(0.381-0.635)

11.020--11.026

(o.508-0.66DlIL~D.045_0.055
lI.m-II.lllS

--l

\2.413-2.6671

~

(o.alS-D.sSg)

E3

II.S6n-O.6ZS

0.139-0.147
(3.S31-3.734)'

Pin 1. Emitter

2. Collector
3. Base

r-

DlA"1

~I-~A:g:, ~U

(14.224-15.3151'~

.,.----

~

!

(1'2': ~";':12" MAX 'm '

::,~~:E:25 1

~~

-t

0.04511.060\
O.14J 1.524)
I

ID3D5-06J~~i

0.115-0.185

14.445 --4.6991
_D,031l-tl,D55

{O.762-'.97/

=t

0.230-0.270

{5842-6"8I

~L--...
(2.032-2.9211' -

'.02'-'.'" L-'.'L-·-L-..

(O.508-0.889)1

(:~:=::;~i) --

(1.143-1.397)

I

3·12

n

TO·220

~ !::~::=::!;:J
--- ~ (~:!:~=~:~:~)
20 f-

30

VCB - COLLECTOR·BASE VOLTAGE (VI

Temperature

4.167' CIW/"d--!-"t--+--+-++-+-

20

10

u

t
I

Pin 1. Base

2. Collector
3. Emitter

z

en

NSP5190 thru NSP5195

POWER

."
(J1
~

to

TRANSISTORS

-...

o

::r

NPN/PNP Complementary Silicon Power Transistors employing Epitaxial Base Mesa Technology. This series is a direct
electrical re·placement for the 2N5190-95 family of devices.
The NSP5190-95 family features National's TO-220 package
which is designed and manufactured using National's "Epoxy
B Concept." The Epoxy B Concept offers exceptional
reliability in applications involving repeated on-off operation
where wide temperature excursions are anticipated.

c

Complementary
Silicon Power
Transistors
60 Watts/4 Amps

z

en

."

~

to

(J1

Package 37

TO-220

Maximum Ratings
Symbol

NSP5190
NSP5193

NSP5191
NSP5194

NSP5192
NSP5195

Units

Collector· Base Voltage

Vcs

40

60

80

V

Coliector·Emitter Voltage

VCEO

40

60

80

V

Emitter·Base Voltage

VES

5

V

Collector Current

Ic

4

A

Base Current

Is

1

A

PT

60
2

W

Temperature Range

TJ, TSTG

-65 to +150

°c

Thermal Resistance

OJC
OJA

2.08
62.5

°CIW

Parameter

(Tc = 25°CI
(TA = 25°CI

Power Dissipation

Typical Performance Characteristics

Physical Dimensions
TO-220

Thermal Derating Curve

0

i

.

~ ....
~"
."""J

'-r--

I

§
~

0

~~~

0

DC··••

ffi

T.. ·'5I1"C

1.0

!

CUA~ES~PPt

BEL~W ~A~E~ y~~q

1

l.a

10

~
MAX

"\

104

7S

100

T - TEMPERATURE _·c

3-13

'\

US

150

0.0900-11.110

~l

~

t

1"
2 PLACES

(~:::~:!~~I .1

L

(4445-4,699)
0.G30-0.oS5

.L-~=t

0.012-0025
(0.30S-0635)

I~::=~~::)

O.115-ll185

r
ir(iill::iJgjj'

0.500-0.562

'\
50

(06lSI

•..,5

I 2 3

~I

2S

0.131-0.147
(3.531-3.734IJ
DIA

RAD

a.3511)

TAMBIENT
0

+

(14.224_15.87511 0250

0

11 !1111:~ll~

VeE - COLL£CTOR·EMlnER VOL fAGE - V

oS6IJ-OJ25

0

I I II '1IIIWE5'"
1

~

\.

0

•• •••• THEIWAll'fUMIHOilTC·Z5"C

..

\.

12.MB-3.M!}

~.'ASE

_SE&DNDBREAKDOWNlIMlTEII

U

UOIll3_,0ZB11

0,tOIl-O.120

0

-'-BDIIOINGWlR~LlMITED

I

n

O.l!J5-0.405

Safe Operating Area Curve

0.230-0.210

15842-1t1t581
..

It)

(J)

~

a.

U)

Z

...;;:::s
o(J)

.....
It)
a.
U)

z

-

Electrical Characteristics
, Parameter

(TC = 25°C unless noted)

Symbol

Coliector·Emitter Sustaining Voltage
Ic = 100 rnA, IB = 0

VCEO

Collector Cutoff Current
VCE = VCEO Rated, IB = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VEB = 1.5 V
(off)
VCE = VCEO Rated, VEB = 1.5 V
(off). Tc = 125°C

ICEX

Collector Cutoff Current
VCB = VCEO Rated, IE = 0

ICBO

Emitter Cutoff Current
VEB = 5 V, Ic = 0

lEBO

DC Current Gain
Ic = 1.5 A, VCE = 2.0 V
Ic = 4 A. VCE = 2 V

hFE

Collector· Emitter Saturation Voltage
Ic = 1.5 A, 16 = 150 mA'
Ic = 4 A, IB = 1.0 A
Base· Emitter "ON" Voltage
Ic = 1.5 A, VCE = 2 V
Gain·Bandwidth Product
Ic= 1 A, VCE = 10V,f= 1 MHz

NSP5190
NSP5193
Min.
Max.
40

NSP5191
NSP5194
Min.
Max.
60

25
10

NSP5192
NSP5195
Min.
Max.
80

Units

V

'1.0

1.0

1.0

mA

0.1

0.1

' 0.1.

mA

2.0

2.0

2.0

0.1

0.1

0.1

mA

1.0

1.0

1.0

mA

100

25
10

100

20

80

7

VCEiS)
0.6
1.4

0.6
1.4

0.6
1.4

V

1.2

1.2

1.2

V

VBE(ON)
fT
2

2

3·14

2

MHz

NPN
TIP29
TIP29A
TIP29B
TIP29C

POWER
TRANSISTORS
NPN/PNP Complementary Silicon Power Transistors. These
devices are designed and manufactured using National's
"Epoxy B Concept." They feature exceptional reliability and
are especially suitable for applications involving repeated
on·off operation where wide operating temperature excur·
sions are anticipated.

PNP
TIP30
TIP30A
TIP30B
TIP30C

Complementary Silicon
Power Transistors
30 Watts

Package 37

TO·220

Maximum Ratings
Parameter

Symbol

TlP29
TIP30

TIP29A
TIP30A

TIP29B
TIP30B

TIP29C
TIP30C

Units

Collector· Base Voltage

VCB

40

60

80

100

V

Collector·Emitter Voltage

VCEO

40

60

80

100

V

Emitter·Base Voltage

VEB

V

5

Collector Current (continuous)
(peak)

Ic

Base Current (continuous)

IB

0.5

A

PT

30
2

W

TJ, TSTG

-65 to +150

°c

8JC
8JA

4.16
62.5

°C/W

(Tc = 25°C)
(TA = 25°C)

Power Dissipation

A

3

Temperature Range
Thermal Resistance

Typical Performance Characteristics

Physical Dimensions
TO·220

Safe Operating Area Curve

Thermal Derating Curve

4I=+=I+l::mJt:=H~r:m=++l
••• •• JlU•••

° ·+HHHH··+
tw"3oa~d"o.1·'D%

I

tv."'1 ms.d"'D.1-tD%

Iw'" 10 ms, d" 0.1-10%
DC O~~nATIO
1

"'TJ<~,lJ

1111

:=
t=

TlP29/3D
TlPZ9A/30"
11P290/30.

r~o 1

VeE -

Q

I

COLLECTO~.EMlnER

..........

~TCASE

2

I'--

I

1

IIiI'se"oc,
10

1.0

°
iz °
°
~
~ 3
°
"~=
°
Ii:
°
°

100

400

VOLTAGE - V

TAMBIENT

25

50

15

100

" t'-.....

T - TEMPERATURE _·C

3·15

125

150

~'

Electrical Characteristics

(Tc = 25°C unless noted)

Parameter

Symbol

Collector· Emitter Sustaining Voltage
Ic = 30 niA, IB = 0

VCEO

Collector Cutoff Current
VCE=30V,I B =0
VCE = 60 V, IB = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VBE = 0

ICES

Emitter Cutoff Current
VEB = 5 V, Ic = 0
DC Current Gain
VCE = 4 V, Ic = 0.2 A
VCE = 4 V, Ic = 1 A.
Base-Emitter "ON" Voltage
VCE = 4 V, Ic = 1 A
Collector-Emitter Saturation Voltage
Ic = 1 A, IB'= 125 mA

TIP29
TIP30
Min. Max.
40

TIP29A
TIP30A
Min. Max.
60

TIP29B
TIP30B
Min. Max.
80

TIP29C
TIP30C
Min. Max.

Units

V,

100

0.3

0.3

-

-

-

-

0.3

0.3

0.2

0.2

0.2

0.2

mA

1

1

1

1

mA

mA

' lEBO
hFE
40
15

75

40
15

75'

40
15

75

40
15

75

VBE(ON)
1.3

1.3

,1.3

1.3

V

0.7

0.7

0.7

0.7

V

VCE(5)

Small Signal Common Emitter Current
Gain
VCE = 10 V, Ic = 0.2 A, f = 1 kHz

hfe

Gain Bandwidth Product
VCE = 10 V, Ic = 0.2 A,
f = 1 MHz

fT

20

20

20

20

3

3

3

3

3-16

MHz

~.POWER

D

PNP
TIP32
TIP32A
TIP328
TIP32C

NPN
TIP31
TIP31 A
TIP318
TIP31C

TRANSISTORS

NPN/PNP Complementary Silicon Power Transistors. These
devices are designed and manufactured using National's
"Epoxy B Concept." They feature exceptional reliability
and are especially suitable for applications involving repeated
on-off operation where wide operating temperature excursions are anticipated.

Complementary Silicon
Power Transistors
40 Watts

Package 37

TO·22O

Maximum Ratings
Symbol

TIP31
TIP32

Collector· Base Voltage

VC8

Collector· Emitter Voltage

VCEO

Emitter-Base Voltage

VE8

5

V

IC

3
5

A

PT

40
2

W

Temperature Range

TJ, TSTG

-65 to +150

DC

Thermal Resistance

()JC
()JA

3.125
62.5

°C/W

Parameter

Collector Current (continuousl
(peak)
Base Current
Power Dissipation

TIP31A
TIP32A

TIP31B
TIP32B

TIP31C
TIP32C

Units

40

60

80

100

V

40

60

80

100

A

18
(T c ,;, 25°C)
(TA = 25°C)

Typical Performance Characteristics

Physical

Dim~nsions

TO-220

Safe Operating Area Curve

Thermal Derating Curve

'''lIIIm

0
0
0

"""

0
0

.......,

TeASE

..",

f'..

0

TAMBIENT
0

..00
VeE - COllECTOR-EMITTER VOLTAGE - V

.

0

V

25

50

15

100

T _ TEMPERATURE _ °c

3·17

~150

125

Electrical Characteristics

(TC = 25°C ~nless noted)

-

Parameter

Symbol

Collector-Emitter Sustaining Voltage
IC=30mA,I B =0

VCEO

Collector Cutoff Current
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VBE = 0

ICES

Emitter Cutoff Current
VEB = 5 V, Ic = 0

lEBO

DC Current Gain
VCE = 4 V, Ic = 1 A
VCE = 4 V, Ic = 3 A

hFE

Base·Emitter "ON" Voltage
VCE=4V,lc=3A
Collector· Emitter Saturation Voltage
Ic = 3 A, I B = 375 rnA

TIP31
TIP32
Min. Max.
40

TIP31A
TIP32A
Min. Max.
60

80

TIP31C
TIP32C
Min. Max,

Units

V

100

0.3

-

-

-

0.3

0.3

0.2

0.2

0.2

0.2

rnA

1

1

1

1

rnA

0.3

-

25
10

TIP318
TIP328
Min. Max.

50

,

25
10

50

25
10

50

25
10

rnA

50

VBE(ON)
1.8

1.8

1.8

1.8

V

1.2

1.2

1.2

1.2

V

VCE(SI

Small Signal Common Emitter Current
Gain
VeE = 10V, Ie = 0.5 A, f= 1 kHz

hie

Gain Bandwidth Product
VCE = 10 V, Ie = 0.5 A,
f = 1 MHz

fT

20

20

20

20

3

3

3

3

MHz

,

3·18

NPN
TIP61
TIP61 A
TIP61B
TIP61C

POWER
TRANSISTORS
NPN/PNP Complementary Silicon Power Transistors. 'These
devices are designed and manufactured using National's
"Epoxy B Concept." They feature exceptional reliability and
are especially suitable for applications involving repeated
on-off operation where wide operating temperature excursions are anticipated.

PNP
TIP62
TIP62A
TIP62B
TIP62C

Complementary Silicon
Poliver Transistors
20 Watts

Package 37

TO-220

Maximum Ratings
Symbol

TIP61
TIP62

TIP61A
TIP62A

TIP61B
TIP62B

TIP61C
TIP62C

Units

Co!lector-Base Voltage

VCB

40

60

80

100

V'

Collector-Emitter Voltage

VCEO

40

60

80

100

V

Emitter-Base Voltage

VEB

5

V

IC

0.5
1.5

A

Parameter

Collector Current (continuous)
(peak)
Base Current

IB

0.4

A

PT

20
1.5

W

Temperature Range

TJ. TSTG

-65 to +150

°c

Thermal Resistance

fJ JC
fJJA

6.25
83.3

°C/W

Power. Dissipation

(T C ; 25°C)

(TA; 25°C)

Typical Performance Characteristics

Physical Dimensions
'. ,
TO-220

.

Safe Operating Area Curve

i,

1.'

Thermal Derating Curve

•

DC OPERATION

TC<;25~C

I

"

'"

~
8

n:a~~'Cl~

1i

!,

1

1"'- 'TeASE

10

~ ~:;:~ ~:~~

-~ 0.04

10

~

10.
VeE - COLLECTOR·EMITTER VOLTAGE - V

<0.

,

o

TAM~NT
25

50

15

,
100

T - TEMPERATURE -"C

3-19

"

125

150

0.115-0.185

(4'445-4'6991
0.030-0.055

~

Electrical Characteristics

(Tc = 25°C unless noted)

Parameter

Symbol

Collector· Emitter Sustaining Voltage
Ie = 30 mA, Ie = 0

VCEO

Collector Cutoff Current
VCE = 30 V, Ie = 0
VCE = 60 V, Ie = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VeE = 0

leES

Emitter Cutoff Current
VEe = 5 V, Ic = 0

IEeo

DC Current Gain
VCE = 4 V, Ic = 50 mA
VCE = 4 V, Ic = 0.5 A

hFE

Base-Emitter "ON" Voltage
VeE = 4 V, Ie = 0.5 A

VeE(ON)

Collector-Emitter Saturation Voltage
Ic =0.5A, Ie = 60mA

TIP61
TIP62
Min. Max.
40

40
15

TIP61 A
TIP62A
Min. Max.
60

TIP61B
TIP62B
Min. Max.
80

TIP61C
TIP62C
Min. Max.
100

Units

V

0.3

0.3

-

-

-

-

0.3

0.3

0.2

0.2

0.2

0.2

mA

1

1

1

1

mA

100

40
15

100

40
15

100

40
15

mA

100

1.3

1.3

1.3

1.3

V

0.7

0.7

0.7

0.7

V

VCE(S)

Small Signal Common Emitter Current
Gain
VeE = 10 V, Ie =.50 mA, f = 1 kHz

hfe

Gain Bandwidth Product
VeE = 10 V, Ic = 50 mA,
f = 1 MHz

fT

20

20
-3

3

3-20

20

20

3

3

MHz

~

PNP
TIP115
TIP116
TIP117

NPN
TIP110
TIP111
TIP112

POWER
TRANSISTORS

"tJz
Z"tJ
"tJz
-f-f

=a =a
~~
~~

010

NPN/PNP Complementary Silicon Power Darlington Transistors. These devices are designed and manufactured using
National's "Epoxy B Concept." They feature exceptional
reliability and are especially suitable for applications
involving repeated on-off operation where wide operating
temperature excursions are anticipated.

~

Complementary
Silicon Power
Transistors
50 Watts

~

-t-f

=a =0
~~
~-...

O)~
~

~

-I-f

=a =a
~~
~~

..... N
Package 37

TO-220

Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Symbol

TIP110
TIP115

TIP111
TIP116

TIP112
TIP117

Units

VCB

60

80

100

V

VCEO

60

80

100

V

5'

5

5

V

Ic

2
4

2
4

2
4

A
A

VEB

Collector Current (continuous)
(peak)
Base Current (continuous)

Is

50

50

50

rnA

PT

50
2

50
2

50
2

W
W

Temperature Range

TJ, TSTG

-65 to +150

-65 to +150

-65 to +150

°c

Thermal Resistance

OJC
OJA

2.5
62.5

2.5
62.5

2.5
62.5

°C!W
°C!W

Power Dissipation

(Tc = 25°C)
(TA = 25°C)

Physical Dimensions

Connection Diagrams

TO-220

NPN

PNP
COLLECTOR

COLLECTOR

r---------,
I
BASE

r---------,

I

I

'ASE~--"'-t:.

I

10-

EMITTER

fMITIER

Pin 1 - Base
2 - Collector
3 - Emitter

Collector is in electrical conduct with
the mounting tab.

3-21

........
........

('\I .....

a.a.
i=i=
~cD
........
........
a.a.

i=i=

oan
........
........
a.a.

i=i=
Za.
a.Z
Za.

Electrical Characteristics (TC: 25°C unless otherwise noted.)
Test Conditions

TIP110
TIP111
T.lP112
TIP115
TIP116
TIP117 Units
Min Max Min Max Min Max

Ic: 30mA,

18: 0

60

Parameter

V(8A)CEO

Collector-Emitter
Breakdown Voltage

VCE: 30V,

Ie: 0

ICEO

Collector CutoH Current VCE : 40V,

Ie: 0

VCE: 50V,

Ie: 0

Collector Cutoff Current Vce: 60V,

IE: 0

Vce: SOV,

IE: 0

Iceo

See Note 1

SO

100

2
2

mA
2

1
1

mA
1

Vce = 100V, IE = 0
IEeO

Emitter Cutoff Current

VEe = 5V,

Ic = 0

VCE :4V,

Ic = lA

hFE

Static Forward Current
Transfer Ratio

VCE = 4V,

Ic = 2A

VeE

Base-Emitter Voltage

VCE = 4V,

IC = 2A

See Notes 1 and 2

2.8

VCE(satl

Collector-Emitter
Saturation Voltage
Parallel Diode Forward
Voltage Drop

Ie = SmA,

Ic = 2A

See Notes 1 and

:1

IC = -4A,

Ie =0

VF

V

2
See Notes 1 and 2

2

mA

2.8

2.S

V

2.5

2.5

2.5

V

5.0

5.0

5.0

V

1000

2
1000

500

1000

500

500

NOTES: 1. These parameters must be measured using pulse techniques, tw = 300",5, duty cycle, 2%.
2. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located"within an inch

from the device body.

Switching Time Test Circuits
toft

ton
Vee

-~o

VCC
~-

If

,....------,
I
I

J

'VIROIV---'l....-.::..~'~

1-"

Ion
IC/lo·250

toff
Ic/l o·250

Typical Characteristic Curves

TIP115, 116, 117

TIP110, 111, 112
2.0
1.0

IC/l0·250

J

5.0

..

2.0

fa

";:
z

I

I'\..

..-

1.0

J

~

~
;:
z

.

Id
I,

iiJ

0.5

i

I,

0.2
0.1
0.1

K
0.2

0.5

1.0

2.0

5.0

"-

0.5

I,

0.2

~

0.1
0.05

III

0.02
0.1

10

JI~

IC/I B·'Z50

I
0.2

0.5

1.0

2.0

5.0

10

IC - COLLECTOR CURRENT (AMPERES)

IC - COLLECTOR CURRENT (AMPERES)

3-22

Typical Characteristic Curves (TC = 25°C unless otherwise noted.)

TIP110, 111, 112
10

"'

:i'l

5.0

~

2.0

~

:::;
:;
a:

'"

~

0:

-

1.0 _125·C

Z -

0.5

-'

..:3....

2.8

VeE·3V

~

.(,

t--

'/

0.1

I--

1111

0.1

0.8

1.0

10.0

-

i-'"

t-

V

12~·U L
III

0.1

1.0

10

IC - COLLECTOR CURRENT (AMPERESI

IC - COLLECTOR CURRENT (AMPERESI

2.8

~

i'='" AsIc

-4I1"C

0.2

VeE =3V

1.5

Iclla = 250

Iclla =250

Il
II

- -40·C
...... ~

...... )il
-4I1"C

-

/.
/

25·C

H5~
-.....

-&

1--1

0.8

0.1

0.1

10.0

Ie - COLLECTOR CURRENT (AMPERESI

ffi

~
....

'"

10.0

i:.

5.0

l5

~

DC

ffi

2.0

~

1.0

~
8

0.5

i1ic;

a:

a:
co

I
~

a:

'50
40
30

~

:<
1!i

-I0.2

1.0

10

x

'"

:;

II
40 60

20

:;

LIMIT DETERMINED
BV BVCEO

11111

0.1

1.0

10.0

IC - COLLECTOR CURRENT (AMPERESI

~
....

iii

II

0.5
1.0

V-

I

;c

'"
~

100

VCE - COLLECTOR·EMITTER VOLTAGE (VOLTSI

3-23

10

."r-..
'\

r-..
'\

"1'\

"1'\

25
50
75 100 125
TC - CASE TEMPERATURE rCI

'\
150

Typical Characteristic Curves

(Continued)

"'::cD
,...
,...
,... ,...

TIP115, 116, 117

~~

i=i=

oui
,... ,...
,... ,...

~~

i=i=
Z~
~z
z~

10

i

.
.....'"

125°C

2.0

\1

::;

'"

~ 0.5

-40°1·
).

z

50.2

....

~

·1.6

!

1.2

I

5.0 10

Z
E.

IC - COLLECTOR CURRENT (AMPERES)

i:

0.5

1.0

2.0

15

1

0:

;: 0.1

2.4

-

l"

a:

0.1

1I
VCE' 3V

...'"'">~

~ 25°~\

V

~ 1.0

2.B

~

ffi

~

.....

~

VCE' 3V

5.0

~25~

-

0.1

V

+125°C

......

O.B

...

-40:V

IIIV

nil

IIII
0.5

5.0

1.0

10

IC - COLLECTOR CURRENT (AMPERES)

U!
~

~

'"~'"

..
..
>
z

2.B
2.4

l5
IC . 250
_
IB

~

ICII~' ~5~

5!i

.......'"
0; ...

1.6

I-

~

2.5

~~Z 2.0

oov

~
~

3.0

~

g;

;:: 2.0

ffi
l-

~

1.2

""C /

~

r-

~...

~

I
I
0.1

0.5

+25°'Zl/1

... >

125°C

O.B

I

-40°C

~ ~ 1.~

/

1.0

0.5

1.0

5.0 10

/./1/1"
i::::::"
0.1

IC - COLLECTOR CURRENT (AMPERES)

/'125°C

r-.

T·"

0.5

1.0

5.0

10

IC - COLLECTOR CURRENT (AMPERES)

i:

I"

~
!;;:

.

10.0

~

DC

:;
I-

2.0

..
.."~

1.0

~
~
a:

50
40

ill
i5
a:

-r0.2

LIMIT DETERMINED
BY BVCEO

11111·

0.1

20

"x

10

1.0

10

"'"

II
40 60

I

X

'"
~

100

VCE - COLLECTOR·EMIITER VOLTAGE (VOLTS)

3-24

30

~

~

0.5

I

!i!

z
;::
::1:

5.0

"- I'\.

""r-..

""-

""-

'\

25
50
15 100 125 150
Tc - CASE TEMPERATURE (OC)

Z

"tJ

POWER
TRANSISTORS

Z

NPN TIP120
PNP TIP125

::!

::2
N

NPN/PNP Complementary Silicon Power Darlington Transistors. These devices are designed and manufactured using
National's "Epoxy B Concept." They feature exceptional
reliability and are especially suitable for applications
involving repeated "ON"/"OFF" operation where wide
operating temperature excursions are anticipated.

9

Complementary Silicon
Power Transistors
65 Watts

"tJ

Z

"tJ

..=c
-t

N

Designed for complementary use.
•
•
•
•

(J1

65W at 25°C case temperature
5A rated collector current
Min hFE of 1000 at 3V, 3A
50 mJ reverse energy rating

Package 37
TO·220

Maximum Ratings
PARAMETER

SYMBOL

Coliector·Base Voltage
Collector·Emitter Voltage
Emitter-Base Voltage

TIP120

TIP125

VCB

60

-60

V

VCEO

60

-60

V

5

-5

V

VEB

Collector Current (Continuous)
(Peak), (Note 1)

IC

Base Curre!'t (Continuous)

'B

Safe Operating Areas at (or below) 25°C
Case Temperature

5

-5

8

-8

A
A

0.1

-0.1

A

(See Maximum Safe Operating Curves)

Device Dissipation (TC ~ 25°C)
(TA ~ 25°C)

65

65
2

PT

Temperature Range

TJ, TSTG

2
-65 to +150

°c

260

260

°c

Note 1: This value applies for tw:::; 0.3 ms, duty cycle:::; 10%.

Connection Diagrams
NPN TIP120

PNP TlP125

COLLECTOR

r----o-..L-.......-I

COLLECTOR

r-----

--,
I

BASE

0--1-.....-1

I
L ____ _

I
_.J

'-----...:...

EMITTER

EMITTER

3-25

W
W

-65 to +150

Lead Temperature, (Soldering, i 0 seconds)

BASE

UNITS

It)

....

C\I

a..
i=
a..
Z
a..
0C\I
....
a..
i=
Z
a..
Z

Electrical Characteristics

(TC = 25°C unless otherwise noted.)

PARAMETER
V(BR)CEO

Collector· Emitter

TIP125.

CONDITIONS
(Note 3)

MIN

IC = 30 rnA, IB = 0, (Note 2)

MAX"

MIN

UNITS

MAX

-60

60

V

Breakdown Voltage
ICEO

Collector Cutoff Current

VCE = 30V, IB = 0

. 0.5

ICBO

Collector Cutoff Current

VCB=60V,IE=0

lEBO

Emitter Cutoff Current

VEB = 5V, IC= 0

-0.5

rnA

0.2

-0.2

rnA

2

-2

rnA

Static Forward Current

VCE = 3V, IC = 0.5A, (Notes 1 and 3)

1000

1000

Transfer Ratio

VCE = 3V, IC = 3A, (Notes 1 and 3)

1000

1000

VBE

Base·Emitter Voltage

VCE = 3V, IC = 3A, (Notes 1 and 3)

2.5

-2.5

V

VCE(SAT)

Collector·Emitter

IB = 12 rnA, IC = 3A, (Notes 1 and 3)

2

-2

Saturation Voltage

IB = 20 rnA, IC = 5A, (Notes 1 and 3)

4

-4

V
V

hFE

Note 2: These parameters must be measured using pulse techniques, tw = 300 I'S, duty cycle::; 2%.
Note 3: These parameters are measured with voltage~sensing contacts separate from the current-carrying contacts and located within 0.125 inch
from the device body.
Note 4: All conditions for TIP125 are a negative value.

NPN TIP120

-I t- (}Yo;: ~Is

VeE MONITOR

0=u--Lj

INPUT
VOLTAGE

-5V--

INPUT

COLLECTOR

"

,.J=±--'OO'"---j

CURR::RICE:t

so

1

~

I

.

COLLECTOR
VOLTAGE

20V
VCE(SAT)--

PNP TIP125
--I
-I

VCEMONITOR
INPUT
VOLTAGE

(NOTE I)

5:IL-SL
,

100mH

INPUT

~'W~'m'

I

10'm'--1

COLLECTOR
CURRENT

so

"

-=-

-I'---!--Y
VCC"'2DV

T

IC
20V

MONITOR
RS

0.1

':"

COLLECTOR
VOLTAGE

Y(BRICER - - -

Note 5: Input pulse width is increased until ICM = lA.
Note 6: Input pulse width is increased until ICM = -lA.
FIGURE 1

3·26

'\

I

Z

Typical Performance Characteristics

"tJ

NPN TIP120
Base-Emitter Voltage vs

Static Forward Current Trans--

fer Ratio vs Collector Current

Case Temperature

10k
I-

~

§

4k

'"<

TC = Z5°C

~

UQ

~~

Zk

",'"
Q~
~~
uZ

lk
700

~e:

400

>

;::'"

-<

,

ffi

Z.4

~~

~~

-1--

~

o.a

w

>=

0.7

1

4

Z

VCE = lV
INOTES 1 AND 21

0.4

100
0.4

ICrt

I

VCE = 3V
INOTES 1 AND ZI

5~-:: -

>

7 10

IS'" 12 rnA,

Ie~=
=

3A-

I I I I
INOTE~ 1 ~NO ZI

II

O.Z

~cn

I

~
la = Z rnA.lc = lAf-S

0.4

!...~
S~

la l= zdrnA! IC lSAI- f - -

=

OJ

~~

0
-75-50-Z5 0 Z5 so 75 100 lZ5 150 175

IC - COLLECTOR CURRENT IAI

1

~g

-

-f-

Z

~~

r--,.., I~ -

w l.Z

zoo

I
IC =

..... r- -r-..

1.6

~

I

w

z.a

Z

'"~

i"""-

TC=-55°C

4

3.Z

2w

TC -100"C

7k

Collector-Emitter Saturation
Voltage vs Case Temperature

0.1

I

-75-50-Z5 0 Z5 so 75 100 lZ5 150 175

TC - CASE TEMPERATURE rCI

TC - CASE TEMPERATURE ('CI

PNP TIP125
Base-Emitter Voltage
vs Case Temperature

Static Forward Current Transfer
Ratio vs Collector Current

~

10k
7k

~

4k

~~
;::'"
",,,,

Zk

UQ

~~

uZ

Ik
700

-3.Z

~

'"

>

::;;;'"
w

ZOO
100
-0.4

-1.6

w -12

"'
~

~II

-Z

I
~

VCE = -3V
INOTES 1 ANO ZI
-0.7 -1

-o.a
-0.4

>

-Z

-Z

'"
<
Q
I-

-I

~ii

)C" I SAI- r-

- -

1"-_

-t-

IC = -3A

-r-..

Ic= -IA

t;

c:

Q

Q

w> -0.7
:j Z

'i' Ei
-'"
.... "


=

la = -Z rnA.lc - -IA
IB - 12 rnA, Ie '" -3A

I I I I
INOTES I ANOIZI

TC - CASE TEMPERATURE I"CI

Maximum Safe Oper~ting Curves
NPN TIP120

Maximum Collector Current

Maximum Collector Current

vs Collector-Emitter Voltage

5
I-

ill

~

'"
Q

~

lii
'x<"

'"

I
~

vs Unclamped Inductive Load

5....
~
~

10
7
4

pIi

Z

OC
ION

tw=-300/.ls,
d-0.l-l0%

I
0.7

IJlJ
Tc';25"C
7 10

4

~
8

Z

"

I
~

0.1
4

ZO

10
7

a:

lii
'x"
<

0.4
0.2

20

40 10100 200

0.2
0.1
I

400

~

g;

~

-4

x

Iltw=lOO".
d-0.l=10%

-0.2

I

5

-zo

fil

-10
-7

~

De
ION

'"

ZO

40 70100 200

INOUCTIVE LOAO ImHI

K

~

8

50 mJ

-z
-1
-0.7

INOTE 71

'"x''"" -0.4
< -0.2
'E" -0.1

IIIJ
TC';25"C

Vce- ZOV
RBB2 = I DOll
TC = 25°C
IFIGURE 11

I

.!: -0.1

-4 -7 -10 -20 -40

-4

Q

~ -OA

:i"

7 10

I-

#il

-I
-0.7

4

UNCLAMP~O

Maximum Collector Current
vs Unclamped Inductive Load

-10
-7

-z

2

L-

Maximum Collector Current

....
ill

INOTE 11
Vec - zov
Raa2 -lOOn
Tc=Z5"C
IFIGURE II

0.4

vs Collector-Emitter Voltage

5

......

I
0.7

VCE - COLLECTOR·EMITTERVOLTAGE IVI

PNP TIP125

50rnJ

Q

K

I

-1 DO -200 -400

2

4

7 10

20

40 70100 ZOO

L- UNCLAMPEO INDUCTIVE LOAD ImHI

VCE - COLLECTOR·EMITTER VOLTAGE IV)

Note 7: Above this point, the Safe Operating Area has not been defined.

3-27

II

-0.1.
-75 -50-25 0 Z5 SO 75 100125 ISO 175

Te - CASE TEMPERATURE I"CI

IC - COLLECTOR CURRENT IAI

-

~ ~ -0.2

VCE = -3V
INIOT~S 1 ~NOIZI

0
-75 -50-25 0 25 SO 75 100125150175

-7 -10

-4

>

I-

< -Z.4

.... ~

J
I~ o~ZO ~A. ic ol_5A= ..--

ffi _
l-

~ -2.8

Tc Z5"C
TC= -55"C

-4

:;

TC= 100"C:::j::j::j:j:j:

~ca 400
w

Collector-Emitter Saturation
Voltage vs Case Temperature

Z
-I

;;
....
N

..o
"tJ

Z

"tJ

::!

....

"tJ

N
UI

~
,...
c..
i=
c..
z
c..

-

o
N
,...
c..
i=
z
c..

z

Thermal Information Curves
NPN TIP120, PNP TIP125
Free·Air Temperature
Dissipation Derating Curve

Case Temperatura Dissipation
Derating Curve
U

80
10
60

l!l

r--

gg

.....

,

2

:!2

'\. ROJC'; 1.92°CIW

50

~i=

~~

40

1.5

'ROJA'; 62.5°CIW

",lii

30

!is

20

"':;:

x'"
«u

''''
.1:""

10
0

1

'\

"-

0.5

'\.

0
0

25

50

15

IOU

125

150

25

0

TC - CASE TEMPERATURE ('C)

50

15

100

n

TO·220

0.395-0.405
I10.033-lo.287)

0.175-0.185

0.139_0.147J
(3.531-3.734)
DlA"1

~

~(4'445-4'699)
0.030-0.055
(0.762-1.397)

t r-~~(:::~:) ~
~[~
--l

0.560-0.625
(14.224-15.875) 0.250

6'350)

RAD

II

~== ====
MAX

1 2 3

-

...----

0.230-0.270
'(5.842-6.858)
7°
2 PLACES
r-

0.500-0.562

0.012-0.025
(0.305-0.635) -- f-oo

(12.70.14.275)
, 0.045-0.C60
(1.143-1.524)
0.020-0.035
(0.508-0.889)
0.090-0.110
(2.286-2.794)--

150

TA - FREE·AIR TEMPERATURE (OC)

Physical Dimensions

0.100-0.120
(2.540-3.048)

125

+-

J.~

0.080-0.115 ..
(2.032-2.921 )

L

Pin 1 - Sase
2 - Collector
3 - Emitter
Collector is in electrical conduct with
the mounting tab.

3·28

I. __

2N5293 thru 2N5298

POWER
TRANSISTORS
NPN General Purpose Silicon Power Transistors designed for
medium power switching and amplifier applications in
Military, Commercial and Industrial equipment.
These devices are designed and manufactured using National's
"Epoxy B Concept." They are especially useful in applications involving repeated on-off operation where wide temperature excursions are anticipated. The transistor family is
offered with straight leads or pre-formed for insertion in
TO-66 sockets.

NPN Silicon
Power Transistors
36 Watts/4 Amps
2N5293
2N5295
2N5297

2N5294
2N5296
2N5298

.pp
E

TO-220AB

TO-220AA

Maximum Ratings
Parameter

2N5293
2N5294

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

2N5295
2N5296

2N5297
2N5298

Units

VCB

80

60

80

V

VCEO

70

40

60

V

VEB

7

5

5

V

Collector Current

IC

4

A

Base Current

IB

2

A

PT

36
1.8

w

Temperature Range

TJ, TSTG

-65 to +150

°c

Thermal Resistance

6JC

3.4·'

°C/W

(Tc = 25°C)
(TA = 25°C)

Power Dissipation

Physical Dimensions

Typical Performance Characteristics

TO-220AB

Safe Operating Area Curv.

Thermal Derating Curve

1O~~~~~~~~~J,r,m
~~ERATION FOR SlNI~~~ ~:fol!
r----r-rONREPE~VE PU~ W:I:I:

:iO:~Nfotsi'5D~s'O~

i

i
...

B

1.0

•,

50Dms
DC OPERATION

12N529S, 2N5296)

8

(2N5291,2N529SN
(2N5281, ZN5Z94

0.1

1~

10

~ ~

; I 3D1-r-_+~-""l._+-_I--+_-l

Irlno~lI·

=
~

b

60.--,--.,.--.,......,,--,---,

H- ;

~

401--+-+-+--1--+--j

;;;

'TeASE

~ 2D
'
....
k 101--+-+-+--1-''''''=+---1

rt ~

~

TAMBIENT

100

VeE - COLLECTOR·EMITIER VOLTAGE - V

°0~=;'5==~5~0==7~5==~'OO~-f~'5~~f5'O
T - TEMPERATURE _·c

3-29

TO-220AA

co
0)
N

Electrical Characteristics

(TC = 2Soc unless noted)

II)

Z

Parameter

(Symbol

Collector· Emitter Sustaining Voltage
Ic=100mA,IB=0

, VCEO

N

....s:.:::s
....
M

Coliector·Emitter Sustaining Voltage
Ic = 100 mA, RBE = 100 n

N

Collector· Emitter Sustaining Voltage
Ic = 100 mA, VBE = 1.5 V (off)

0)
II)

Z

N

2N5293
2N5294
Min.
Max.
70

2N5295
2N5296
Min.
Max.
40

2N5297
2N5298
Min.
Max.
60

ICEX

Collector Cutoff Current
VCE = 6S V, VBE = 1.S V (off),
Tc=150°C
VCE = 3S V, VBE = 1.5 V (off),
Tc=lS0°C

ICEX

Collector Cutoff Current
VCE = SO V, RBE = 100 n
VCE = SO V, RBE = 100 n,
Tc = lS0°C

ICER

Emitter Cutoff Current
VEB = 7 V, Ic = 0
VEB = S V, IC = 0

lEBO

DC Current Gain
VCE =4 V,lc = SOOmA
VCE = 4 V, Ic = 1 A
VCE =4 V, Ic = 1.SA

hFE

Collector Saturation Voltage
Ic = SOO mA, 18 = SO mA
Ic=l A,IB=100mA
Ic= 1.SA,IB= 150mA

VCE(S)

Base· Emitter "ON" Voltage
VCE = 4 V, Ic = SOO mA
VCE = 4 V, Ic = 1 A
VCE=4V,lc=1.5A

VBE(ON)

Gain Bandwidth Product
VCE = 4 V, Ic = 200 mA

fT

V

-

ICER

Collector Cutoff Current
VCE = 6S V, VBe = 1.S V (off)
VCE = 35 V, VBE = 1.5 V (off)

Units

75

SO

70

V

80

60

80

V

0.5

-

0.5

-

2

-

3

-

3

-

5

-

0.5
2

-

O.S
2

mA

-

1

-

-

mA

1

1

30

120

-

-

30

-

-

20

80

-

1.0

-

-

1.0

-

-

-

1.3

-

2

mA

-

-

1.1

3·30

-

1.0

-

2

-

120

mA

V

V

1.S
2

MHz

2N6106 thru 2N6111

POWER
TRANSISTORS
PNP Power Transistors employing Epitaxial Base Mesa
Technology. These devices are designed and manufactured
using National's "Epoxy B Concept." They are especially
useful in applications involving repeated on-off operation
where wide temperature excursions are anticipated. The
devices are offered with straight leads or pre-formed for
insertion into TO-66 sockets.

PNP Silicon
Power Transistors
40 Watts
2N61 07
2N61 09
2N6111

2N6106
2N610B
2N6110

.~p
E

TO-220AB

TO-220AA

Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage

2N6110
2N6111

2N6108
2N6109

VCB

40
30.

VCEO

Emitter-Base Voltage
Collector Current (continuous)
Base Current (continuous)
Power Dissipation

Symbol

(Tc = 25°C)
(T A = 25°C)

Te':!1perature Range
Thermal Resistance

2N6106
2N6107

Units

60

80

V

50

70

V

VEB

5

V

Ic

7

A

IB

3

A

PT

40
1.8

w

TJ. TSTG

-65 to +150

°c

8JC
8JA

3.125
69.4

°C/W

Typical Performance Characteristics

\

Physical Dimensions
TO-220AB

Safe Operating Area Curve

Thermal Derating Curve

"r--r-.,.--.--r--r-.,

~

z

.

40

0

I=
~

3D

20

""

"-

TeASE

TO-220AA

;. 101---1--+--+-11-:-""'-"'-1-,--1
TAMBIENT

"'

'OC=~25==~S~O==~1S==~IO~O=-'~25~~ISO
T - TEMPERATURE _ GC

0100-41%'11

(Z54D_U41.

nl1::~;=I::~~I~' ~,f~~~ii;:
-<

CJ5Jl-11l4J

~

DIA

t

+

o560-06.Z5

RAD

(14ZZ4L-~S8151

I~J

--

o045-U 060

1IIU.L

Zii
i\i'i'j:i'5
0090-0110

1!2DB_2J94.-

3-31

;::1

r
L

2PLACU

~

~1Il2-18511

--t
-1
OlSO-ll411

~I

,....

,....
,....
co

Electrical Characteristics

(T C ~ 25°C unless noted)

zC\I

Parameter

Symbol

....c:::J

Collector· Emitter Sustaining Voltage
Ic ~ 100 mA, IB = a

VCEO

Collector· Emitter Sustaining Voltage
Ic = 100 mA, RBE = 100 r2

VCER

Collector Cutoff Current

ICEO

co
o,....

CO

Z

C\I

2N6106/07
Min.
Max.

2N6108/09
Min.
Max.

2N6110/11
Min.
Max.

70

50

30

V

80

60

40

V

VCE~60V,IB=0

1.0

-

VCE ~ 40 V, IB ~ 0
VCE=20V,I B =0

-

1.0

-

-

1.0

0.1

-

-

0.1

-

-

0.1

Collector Cutoff Current
VCE ~ 75 V, VBE = 1.5 V (off).
VCE = 56 V, VSE = 1.5 V (off)
VCE = 37.5 V, VSE ~1.5 V (off)

ICEX

Collector Cutoff Current @ Tc ~ 150°C
VCE = 70 V, VSE ~ 1.5 V (off)
VCE = 50 V, VSE ~ 1.5 V (off)
VCE= 30 V, VBE ~ 1.5 V (off)

ICEX

Emitter Cutoff Current
VEB ~ 5 V, Ic ~ 0

lEBO

DC Current Gain

hFE

2

-

-

2

-

-

2

1.0

1.0

1.0

VCE~4V,lc~2A

30

150

-

-

VCE ~ 4 V, Ic = 2.5 A

-

-

30

150

-

-

VCE ~ 4 V, Ic ~ 3 A
VCE = 4 V, Ic ~ 6.5 A

Collector Saturation Voltage
Ic ~ 2.0 A, IS ~ 200 mA
IC = 2.5 A, IB ~ 250 mA
IC~3.0A, IB=300mA

5

5

-

-

30
5

150

mA

mA

mA

mA

VCE(SI

IC~6.5A,ls=1.63A

. Base·Emitter "ON" Voltage
VCE = 4 V, Ic ~ 2 A
VCE = 4 V, Ic '= 2.5 A
VCE = 4 V, Ic = 3.0 A

Units

1.0

-

-

-

1.0

-

-

2

2

1.0
2

V

VSE(ONI
1.5

V

1.5
1.5

Small Signal Current Gain
VCE ~ 4 V,lc = 0.5 A, f = 50 kHz

hf.

Gain Bandwidth Product
VCE = 4 V, Ic = 0.5 A, f = 1 MHz

fT

Collector· Base Capacitance
VCB=10V,f=1 MHz

Cob

20

20

20

10

10

10

,

250

3·32

250

MHz
250

pF

NPN
2N6121 thru 2N6123
PNP
2N6124 thru 2N6126

POWER
TRANSISTORS
NPN/PNP Complementary Silicon Power Transistors employing Epi-8ase Mesa Technology. These devices are designed
and manufactured using National's "Epoxy 8 Concept."
They feature exceptional reliability and are especially useful
in applications involving repeated on-off operation where
wide temperature excursions are anticipated.

Complementary Silicon
Power Transistors
5 Wattsl7 Amps

Package 37

TO-220

Maximum Ratings
Parameter
Collector· Base Voltage

Symbol

2N6121
2N6124

2N6122
2N6125

2N6123
2N6126

Units

VCB

45

60

80

V

Collector-Emitter Voltage

VCEO

45

60

80

V

Emitter-Base Voltage

VEB

5

V

Collector Current (continuous)

Ic

4

A

Base Current

IB
PT

40

W

1/0JC

320

MW/oC

TJ. TSTG

-65 to +150

°c

Power Dissipation (T c = 25°C)
Derating Factor
Temperature Range

A

Typical Performance Characteristics

Physical Dimensions
TO-220

Thermal De~ating Curve

S.fe Operating Area Curve
10

•

TJMAX"'5D"C

PULSE CURVES APPLY

BELOW RATED VCEO

~+j

b~~

\

•

1.

2N6121

•1.'

Z;:!~i:t-

1

10

'"

~

•
•

~~

•
•

i

•
•a

100,

VeE -COLLECTOR TO EMITIERVOLTAGE-V

"'- "'-

TeASE

"'TAMBIENT

25

50

75

100

T - TEMPERATURE -'C

3-33

"

125

150

Electrical Characteristics

(Tc = 25°C unless noted)

Parameter

Symbol

Collector Sustaining Voltage
2N6121,24
Ic=100mA,IB=0
2N6122,25
2N6123,26

VCEO

Collector Cutoff Current
VCE = VCEO Rated, IB = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VEB = 1.5 V (off)

ICEX

Collector Cutoff Current
VCE = VCEO Rated, VEB = 1.5 V (off)
Tc=125°C

ICEX

Collector Cutoff Current
VCB = VCEO Rated, IE = 0

ICBO

Emitter Cutoff Current
VEB = 5 V, Ic = 0

lEBO

DC Current Gain
Ic=1.5A,VCE=2V
DC Current Gain
IC = 4 A, VCE = 2 V

Min.

Max.

Units
V

45
60
80
mA
1.0
mA
0.1
mA
2.0
mA
0.1
mA
1.0
hFEl

2N6121, 22, 24, 25
2N6123,26

20
20

100
80

10
7

-

hFE2
2N6121, 22, 24, 25
2N6123,26

Collector Saturation Voltage
Ic=1.5A,I B =0.15A
IC =4.0 A, IB = 1 A

VCE(5)

Base·Emitter "ON" Voltage
Ic =·1.5 A, VeE = 2 V

VBE(ON)

V
0.6
1.4
V
1.2

Gain·Bandwidth Product
Ic = 1 A, VCE = 4 V, f= 1 MHz

fT

Small Signal·Current Gain
Ic = 100 mA, VCE = 2 V, f= 1 kHz

hie

"-

2.5

MHz
'-.-.

\

25

~
~

(
\

!

)
i,

3-34

POWER

NPN
2N6129 thru 2N6131

TRANSISTORS

2N6132 thru 2N6134

PNP

NPN/PNP Complementary Silicon Power Transistors employing Epitaxial Base Mesa Technology_ These devices are
designed and manufactured using National's "Epoxy B
Concept." They feature exceptional reliability and are
especially useful in applications involving repeated on-off
operation where wide temperature excursions are anticipated_

Complementary Silicon
Power Transistors
5 Watts/7 Amps

Package 37

TO·220

Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Symbol

2N6129
2N6132

2N6130
2N6133

2N6131
2N6134

Units

VCB

40

60

80

V

VCEO

40

60

80

V

VE8

5

5

5

V
A

Collector Current

Ic

7

7

7

Base Current

18

3

3

3

A

Power Dissipation (T C = 25° C)

PT

50

50

50

W

Derating Factor
Temperature Range

1/liJC

400

400

400

MWtC

TJ, TSTG

-65 to +150

-65 to +150

-65 to +150

°c

Typical Performance Characteristics

Physical Dimensions
TO-220

Safe Operating Area Curve

Thermal

De~ating

n

0395-0405
(lOOJ3_I02871

Curve

otGLl-O 1211
12540-3048)

a

a
5~ I-t'
f--:DC OPERAT ION

"-

m.

a

}.

a

I\N. "1

a

:

~~~:~::O:PPLY
-

O. 1
1.0

llCE~ LIII
10

"-

a
a

:
:

~

BELOW RATED

-..---1-

II

"-1"'-

0
TAMBIENT

100

VeE - COLLECTOR TO EMITTER VOLTAGE - V

056010625'---

114.224-15B15J~
63SDJ

~
MAX

TeASE

50

75

~A~:I --r--~~=I

0230-02111

I ~ 1

'(Sm.-585BI

7'
2 PLACES

0500-0562

{1Z1D-142151

"'-

0
25

+

11115-0185

~14A45-46991

0.139_0.,41J
13.531-31341
0.(130-01155
DtA
,-(D1GZ-lol91)

100

T _ TEMPERATURE _oC

3·35

"'-

125

150

D1J45-DD60
(1.143-1.524)
0.D20-0.0l5
(0.501-0.889)

0.090-0.110
12.2B&-2.194\

~

(0305-11635)

OD80-l].115
12.032-2.921J

I

Electrical Characteristics

(T C = 25°C unless noted)
Syl"(1bol

Parameter
Collector Sustaining Voltage
2N6129,32
Ic=100mA,IB=0
2N6130,33
2N6131,34

VCEO

Collector Cutoff Current
VCE = VCEO Rated, Ie = 0

ICEO

Collector Cutoff Current
VCE = VCEO Rated, VEB = 1..5 V (off)

ICEX

Collector Cutoff Current
VCE = VCEO Rated, VEe = 1.5 V (off)
TC= 125°C

ICEX

Collector Cutoff Current
Vee = VCEO Rated, IE = 0

Iceo

Emitter Cutoff Current
VEB = 5 V, Ic = 0

IEeo

DC Current Gain
Ic = 2.5 A, VCE =4 V

hFEl

DC Current Gain
Ic = 7.0 A, VCE = 4 V

Min.

Max.

Units
V

40
60
BO

)

mA
2
mA
0.2
mA
2
mA
0.1
mA
1

2N6129,30,32,33
2N6131,34

Collector Saturation Voltage
Ic = 7.0 A, Ie = 3 A
2N6129, 30,32,33
2N6131,34
Base·Emitter "ON" Voltage
Ic = 2.5 A, VCE = 4 V

20

100

7
5

-

-

1.4
2.0

V

VCE(SI

-

V

VeE(ON)
2.0

Gain Bandwidth Product
VCE = 4 V, Ic = 1 A, f = 1 MHz

fT

Small Signal Current Gain
VCE =4 V,lc = 100mA, f= 1 kHz

hfe

MHz
2.5
25

3·36

N

Z

POWER
TRANSISTORS

2N6288 thru 2N6293

NPN Silicon
Power Transistors
40 Watts
2N6289
2N6291

2N6288
2N6290

.pp
E

TO·220AB

TO·220AA

Maximum Ratings
Symbol

Collector· Base Voltage

2N6288
2N6289

2N6290
2N6291

2N6292
2N6293

Units
V

Vcs

40

60

80

Collector· Emitter Voltage

VCEO

30

50

70

Emitter·Base Voltage

VES

5

V

Collector Current (continuous)

IC

7

A

Base Current (continuous)

Is

3

A

Power Dissipation

PT

40
1.8

W

Temperature Range

TJ, TSTG

-65 to +150

°c

Thermal Resistance

OJC

3.125
69.4

°C/W

(Tc = 25°C)
ITA = 25°C)

OJA

TO·220AB

Thermal Derating Curve

Safe Operating Area Curve
60

II!
I

~

Iii

~
=

i:l

~

~

~

'Se~

:i

~

~

i

~1.11

50

"

'" "

30

Q

'.0'"

-r-~~i~gi~:;

,.....+-.
".1
-1.0

~.v

·10

'"

~

20

t.

10

I

~-100

VeE - CDLLEtTOR·EMITIER VOLTAGE - V

TeASE

TAMBIENT

25

"

15

TO·220AA

..... i'-...

0
0

V

Physical Dimensions

Typical Performance Characteristics

·10

N

(X)
(X)

NPN Power Transistors employing Epitaxial Base Mesa
Technology. These devices are designed and manufactured
using National's "Epoxy B Concept." They are especially
useful in applications involving repeated on-off operation
where wide temperature excursions are anticipated. The
devices are offered with straight leads or pre-formed for
insertion into TO-66 sockets.

Parameter

0')

100

T - TEMPERATURE - "c

3·37

"'-

'"

150

Electrical Characteristics

co

CO

N

CO

Z

N

(T C = 25°C unless noted)

Parameter

Symbol

Collector-Emitter Sustaining Voltage
Ic = 100 mA, Is = 0

VCEO

Collector-Emitter Sustaining Voltage
Ic = 100 mA, RSE = 100 n

VCER

ColleClpr Cutoff Current
VCE = 60 V, Is = 0
VCE = 40 V, Is = 0
VCE = 20 V, Is = 0

ICEO

Collector Cutoff Current
VCE = 75 V, VSE = 1.5 V (off)
VCE = 56 V, VSE = 1.5 V (off)
VCE = 37.5 V, VBE = 1.5 V (off)

ICEX

Collector Cutoff Current @ T C =1500 C
VCE = 70 V, VSE = 1.5 V (off)
VCE = 50 V, VBE = 1.5 V (off)
VCE = 30 V, VSE = 1.5 V (off)

ICEX

Emitter Cutoff Current
VES = 5 V, Ic = 0

lEBO

DC Current Gain
VCE = 4 V, Ic = 2 A
VCE = 4 V, Ic = 2.5 A
VCE = 4 V. Ic = 3.0 A
VCE =4 V, Ic = 6.5A

hFE

Collector Saturation Voltage
Ic = 2.0 A. IB = 200 mA
Ic = 2.5 A, IB = 250 mA
Ic = 3.0 A. Is = 300 mA
Ic = 6.5 A. Is = 1.63 A
Bas~-Emitter

"ON" Voltage
VCE=4V.lc=-2A
VeE = 4 V, Ic = 2.5 A
VCE = 4 V. Ic = 3.0 A

2N6292/93
Min.
Max.

2N6290/91
Min.
Max.

2N6288/89
Min.
Max.

Units

70

50

30

V

80

60

40

V

-

1.0

-

-

1.0

-

-

1.0.

0.1

-

-

-

0.1

-

0.1

2

-

-

2

-

-

-

2

1.0

1.0

1.0

150

-

-

-

-

30

150

-

-

-

5

5

mA

-

-

30

rnA

30
5

VCE(SI

mA

mA

150

-

1.0

-

-

1.0

-

-

-

2

2

1.0
2

V

VSE(ONI
V

1.5
1.5
1.5

Small Signal Current Gain
VCE = 4 V. Ic = 0.5 A, f = 50 kHz

hfe

Gain Bandwidth Product
VCE = 4 V. Ic =0.5 A, f = 1 MHz

fT

Collector-Base Capacitance
VCB=10V.f=1 MHz

Cob

20

20

20

4

4

4

250

3-38

250

MHz
250

pF

NPN
PNP

POWER
TRANSISTORS

MJE800 thru MJE803
MJE700 thru MJE703

NPN/PNP Complementary Silicon Darlington Power Transistors employing Epitaxial Base Mesa Technology_ This
series is designed to replace discrete driver and output
stages in complementary audio amplifier applications.
The MJE700-703 and MJE800-803 family features
National's TO-126 package which is designed and manufactured using National's "Epoxy B Concept." The "Epoxy
B Concept" offers exceptional reliability in applications
involving repeated on-off operation where wide temperature excursions are anticipated.
Package 38

TO-126

Maximum Ratings
Parameter

Symbol

MJE700, MJE701
MJE800, MJE801

MJE702, MJE703
MJE802, MJE803

Units

Vcs

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base \/'0ltage

VES

5

5

V

Collector-Base Voltage

Collector Current (continuous)

IC

4.0

4.0

A

Base Current

Is

100

100

mA

PT

40
1.5

40
1.5

W
W

TJ. TSTG

-55 to +150

-55 to +150

°c

3.125
83.3

3.125
83.3

°C/W
°C/W

Power Dissipation

(T c = 25°C)
(TA = 25°C)

Temperature Range
Thermal Resistance,

. 8JC
8JA

Physical Dimensions

Connection Diagrams

TO-126
0.Z90-0.lID

(7.366-7.8141
0.145-0.155

(3.683-1937)

PNP

NPN
COllECTOR

r-------

~

r------- --,
I

BASE

0.148-0.150
13.159.-3.810)

O.I20-D.1l0
(3.048-3.3021

COllECTOR

'"

,I

I

0--:-.---1::'

'ASEo-:"""1~-r:

0.091-0.09'

0.020-0.026

~=t

0.4250.435
uom-ll.049j

~0095~
f2.159_2A13I~16.6311

.J ITI

12311-2.(64)

..JI- 0.015-0.0"

IJL

(n.lBI-G.alS)

(0.508-0.660) ILD.09S-0.105
0.025-0.035
12A1J-2.6811

--I

EMITTER

EMITTER

J°n'P

-:::f-

(D635-D.B891E:3~

I

0.045-0.055
(1.143-1.391)

t

I

Pm 1. Emitter

2. Collector

3. Base

When mounting the deVice, torque not to exceed
6.0 ,n lb.
If lead bending IS required, use SUitable clamp aT
other supports between tranSistor case and POlOt
of bend.

4·3

Electrical Characteristics

(TC = 25°C unless otherwise noted.)

I

Characteristic

I

Symbol

Min

I

Max

I

Units

OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage (Note 1)
MJE700, MJE701, MJE800, MJE801
(lc = 50mAoc, IB = 0)
MJE702, MJE703, MJE802, MJEB03
Collector Cutoff Current
(VCE = 30Voc, IB = 0)
(VCE = 40Voc, IB = 0)

BVCEO
60
BO

-

-

500
500

-

0.2
2.0

-

2.0

750
750

-

-

2.5
2.B

-

-

2.5
2.5

-

5.0

1.0

-

ICEO
MJE700, MJE701, MJEBOO, MJE801
MJE702, MJE703, MJEB02, MJEB03

Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE =0, TC = 100°C)

ICBO

-

Emitter Cutoff Current
(VBE = 5.0Voc, Ic = 0)

VOC

/lAoc

mAoc

lEBO

mAoc

ON CHARACTERISTICS
DC Current Gain (Note 1)
(lc = 1.5Aoc, VCE = 3.0Voc) MJE700,MJE702,MJ+800,MJE802
(lc = 2.0Aoc, VCE = 3.0Voc) MJE701, MJE703, MJEB01, MJEB03

hFE

Collector·Emitter Saturation Voltage (Note 1)
(Ic = 1.5Aoc, IB = 3OmAoC) MJE700,MJE702,MJEBOO,MJEB02
(lc = 2.0AoC, IB = 4OmAoC) MJE701, MJE703, MJEB01, MJEB03

VCE(sat)

Base·Emitter On Voltage (Note 1)
(lc = 1.5A oc , VCE = 3.0Voc) MJE700, MJE702, MJE800, MJEB02
(lc = 2.0Aoc, VCE = 3.0Voc) MJE701, MJE703, MJE801, MJEB03
Parallel Diode Forward Voltage Drop
(lc = -4 A, IB = 0)

VBE(on)

-

VOC

VOC

VF

VOC

DYNAMIC CHARACTERISTICS
Small Signal Current Gain
(IC = 1.5Aoc, VCE = 3.0Voc, f = 1.0MHz)

-

hIe

NOTES: 1. Pulse Test: Pulse width" 300!,s, duty cycle" 2.0%.

Typical Characteristic Curves

(T C = 25°C unless otherwise noted.)

MJE700-MJE703
z

in

10

~ 2.8
C.

VCE' 3V

5.0

125'C

2.0

\1

,,-40iC

'"

":z

\.

::!

'\

0.1

~~
~

-40'Y

~215;.v
1.6

!::

1.2

~ 0.8

~

~ ~

+125°C

V

8>

I]v

nil

v

I

\i

1111

'c - COLLECTOR CURRENT (AMPERES)

:>

=

'c - COLLECTOR CURRENT (AMPERES)

w

0.5

1.0

4-4

1.5

+25'C/I./f

~o

0.1

1.0

-40'C

0"

~

0.5

Z. 2.0

.ow

5.0 10

0.1

'C/'~' ~5i

2.5

'" -

2.0

P

::i
I-

3.0

~

2.4

0

:>

k

0.5
0.2

~

!:;

~ i5'~\

,;-

1.0

..

.,w

0

I I
VCE" 3V

5.0

10

'"
u

:>

1.0
0.5

IIV/Vl

~

:i!!1".......-:-1'25·'C

t0.1

i1l1
0.5

1.0

r ',- .
5.0

10

Ie - COLLECTOR CURRENT (AMPERES)

Typical Characteristic Curves

(Continued)

MJE800-MJE803
10

VCE - 3V

w

~

~
~

'"
W
N

::;

,.'"
'"'"
'"

5.0

;L ;;

0.5

~

<:l
~
I-

-

2.0
1.0 _125'C

0.2
0.1

.,.~(,

/

-40'C

V

1111'

0.1

1.0

10.0

IC - COLLECTOR CURRENT (AMPERES)

2.B
a:

wu;

1.5

VCE = 3V

ICIIS =250

2.4

II

1-1-

II

!::~

I

55 2. 2.0
ww
w'"

"'<
mI-

-

z§!

""'" F'Zs'c

>i~
• 1.2

- 12~"~

I ....

1.6

"',

- -4~'J
.....,

I'

-40C

-

~

1/
V

IL

_.125'e

O.B

II

0.5
0.1

V

L~
1.0

0.1

10

IC - COLLECTOR CURRENT (AMPERES)

1.0

10.0

IC - COLLECTOR CURRENT (AMPERES)

SAFE OPERATING AREA

POWER OERATING

~

~

"ffi

"
5

I-

:ll

'"
'"'"

'"
1l

~

I-

..'"

10.0
5.0
DC'.

2.0
1.0

Tc = 25°C

0.2 1--1-

!:!

0.1

I

<

50

;::

:::

40

Ci

30

iii

"'

'"~

0.5

8

15

:l!

20

'"X<

10

~

LIMIT DETERMINED

nli~CE I I I-I
10

'X"

"-

"'

I

<

100

~

VCE - COLLECTOR·EMITIER VOLTAGE (VOLTS)

4·5

25
50
75 100 125 150
TC - CASE TEMPERATURE ('C)

Switching Time Test Circuits
ton
Vee
RL

,....------,
I

I

J

1,r-:,WRBI,--""'1UH::.~:
'""
IC/IB"'Z50
toft
-VB

RL

.... - - - - - - ,

I

I

RB

I

J

:I''''LV
.~ :
~
I

~I

••

----i-....J
-=I

~

loff

-4V

lefls" 250

Typical Switching Characteristics

PNP
2.0

NPN
Ic/l, ~'250

I,~

1.0 ' "
O.S

I,

"-

0.2

N:

0.1
O.OS

I,

Id

0.02
0.1

0.2

I
02

O.S

1.0

2.0

S.O

r-

0.1
D.l

10

IC - COLLECTOR CURRENT (AMPERES)

0.2

D.S ,1.D

2.0

H
S.D

lD

IC - COLLECTOR CURRENT (AMPERES)

4-6

NPN
2N6037 thru 2N6039
PNP
2N6034 thru 2N6036

POWER
TRANSISTORS
NPN/PNP Complementary Silicon Darlington Power Transistors employing Epitaxial Base Mesa Technology. This
series is designed for general purpose amplifier and low
speed switching applications.

=r=r
... ...

Cc

The 2N6034-39 family features National's TO-126 package
which is designed and manufactured using National's
"Epoxy B Concept_" The "Epoxy B Concept" offers
exceptional reliability in applications involving repeated
on-off operation where wide temperature excursions are
anticipated.

NN

ZZ
0)0)

00

ww
eo

0)
Package 38

TO-126

Maximum Ratings
Symbol

2N6034
2N6037

2N6035
2N6038

2N6036
2N6039

Units

Collector-Base Voltage

VC8

40

60

80

V

Collector-Emitter Voltage

VCEO

40

60

80

V

Emitter-Base Voltage

VE8

5

5

5

V

Ic

4.0
8.0

4_0
8.0

4_0
8.0

A
A

Base Current

18

100

100

100

mA

Power Dissipation (T C = 25°C)
(TA = 25°C)

PT

40
1.5

40
1.5

40
1.5

W
W

TJ. TSTG

-65 to +150

-65 to +150

-65 to +150

°c

9JC
9JA

3.125
83.3

3.125
83.3

3.125
83.3

°C/W
°C/W

Parameter

Collector Current (continuous)
(peak)

Temperature Range
Thermal Resistance

Physical Dimensions

Connection Diagrams

TO-126
0.290-0.310

17.36&-1.1141
0.145-0.155

-

-

-

-

-

-

-

0.148-0.150

.,' .:::J."1D'i~:~'
9"""

COLLECTOR

COLLECTOR
I'" -

~

NPN

PNP
-,

r--------,I
I
I

--:::!o.o95 ~'6.63n
~

SASE 0-..,-_-1:.

SASE

(2.159-2.4131

ITI
IIIL

0."'-0.091

- -"

L ____ _

I

L

EMITTER

EMITTER

-1k gO"-D.'"

12.311-ZA64J
o.020-ll,DZ6Jl.j

IO.5DI-0.6601ILU,D9S-II.1D5
0.025-0.035

...J

E3,

(ZAn-2.S871

",:...-l

ID.m-D.•

(0.381-0.6351
0.045-0.055
(1.143-1.391)

I

Pm 1. EmItter
2. Collector
3. Base
When mounting the deVice, torque not to exceed
6.0 in lb.
If lead bending is reqUired, use SUitable clamp or
other supports between transistor case and pomt
of bend.

4-7

--

Q)CO

C")C")

I

00
coco
ZZ
NN
~

... 2
.......

.c.c

Electrical Characteristics

(Tc = 25°C unless otherwise noted.)

Coliector.E~itter Sustaining Voltage

NN
ZQ.
Q.Z
ZQ.

I

Min

I

Max

Collector Cutoff Current
(VCE = 20Voc, Is = 0)
(VCE = 30Voc, IB = 0)
(VCE = 40Voc, IB = 0)
Collector Cutoff Current
(VCE = 40Voc, VBE(off)
(VCE = 60Voc, VBE(off)
(VCE = BOVoc, VBE(off)
(VCE = 40Voc, VBE(off)
Te=125°C)
(VCE = 60Voc, VBEloff)
Te=125°C)
(VCE = BOVoc, VBE(off)
Te=125°C)

VCEO(sus)

I

Units

"DC

40
60
BO

-

-

0.5
0.5
0.5

2N6034,2N6037
2N6035, 2N603B
2N6036,2N6039

-

0.5
0.5
0.5

2N6034,2N6037

-

2.0

2N6035, 2N603B

-

2.0

-

2.0

-

0.5
0.5
0.5

-

2.0

500
750
100

-

15,000

-

2.0
3.0

-

4.0

-

2.8

.-

5.0

25

-

2N6034,2N603T
2N6035,2N603B
2N6036,2Na039

(lc = 100mAoc, IB = 0

"""I:t

Zz

Symbol

OFF CHARACTERISTICS

C")C")

00
COco

I

Characteristic

.

"-

ICEO
2N6034, 2N6037
2N6035, 2N603B
2N6036, 2N6039

mAoc

mAoc

ICEX
= 1. 5V ocl
= .1. 5Vocl
= 1. 5V ocl
= 1.5V oc,
=·1. 5V oc,
= 1.5V oc,

Collector Cutoff Current
(VCB = 40Voc, IE = 0)
(VCB = 60Voc, IE = 0)
(VCB = 80Voc, IE = 0)

2N6036, 2N6039

mADC

ICBO
2N6034, 2N6037
2N6035, 2N603B
2N6036, 2N6039

Emitter Cutoff Current
(VBE = 5.0Voc, Ic = 0)

lEBO

mAoc

ON CHARACTERISTICS
DC Current Gain
(lc = 0. 5Aoc, VCE'= 3.0Vocl
(lc = 2.0Aoc, VCE = 3.0Vocl
{lc = 4.0Aoc, VCE = 3.0Vocl

-

hFE

,

Collector· Emitter Saturation Voltage
{lc = 2.0Aoc, IB = 8.0mAocl
(Ie = 4.0Aoc, IB = 4OmAoc)

VeE (sad

Base·Emitter Saturation Voltage
{lc = 4.0Aoc, IB = 4OmAocl

VBE(satl

Base·Emitter On Voltage
(Ie = 2.0Aoc, VCE = 3.0Voc)

VBE(onl

Parallel Diode Forward Voltage Drop
(lc = -4A,.IB = 0)

VF

VOC

VOC
Voe
VOC

-'

DYNAMIC CHARACTERISTICS
Magnitude of Small'$ignal Current Gain
(lc = 0.75Aoc, VCE = 10Voc, f = 1.0MHz)

Ihlel

Output Capacitance
(VCB = 10Voc, IE =0, f=O.lMH~)

Cob
2N6034, 2N6035, 2N6036
2N6037,2N6038,2N6039

* Indicates JEOEC Registered Oata.

4·B

pF

-

200
100

Switching Time Test Circuits
ton
Vee

--

Rl

..... - - - - - - ,
I
J,.
I

::::r::::r

I
0.1

RO

C::c::
""'"'"

I

~U~_J

NN

ZZ

}1-"v'V"

0)0)

00

I"

(,)(,)

IC/18:Z50

O)U)

toff
Vee

-VB

Rl

...-------,
0.1

l

toff
IcJIB=25D

I

I

I

I

RB

:t~~~!
"='

~----J-....J

-4V

Typical Switching Characteristics

PNP

NPN

2.0
1.0
0.5

"

IC/lo

10

='2~0

1,\

ICIlO =250

];
~

I,

"-

0.2

"
.a",..

I

0.1

~

ili
Id

0.02
0.1

0.5

1.0

2.0

5.0

...-

[\.

1.0
0.5
0.2

I
0.2

2.0

;::

N:

0.05

5.0

0.1
0.1

10

IC - COLLECTOR CURRENT IAMPERES}

0.2

0.5

-

1.0

2.0

Id
I,

Is

~
5.0

10

Ie - COLLECTOR CURRENT (AMPERES)

4-9

mco

('1)('1)

00

Typical Characteristic Curves

coco

2N6034,2N6035,2N6036

ZZ

NN

::::J::::J
......
.s:::..s:::.

--

o

~ 2.0

00

'"o~ 0.5

Zz
NN

Z~
~z
Z~

"''"
!:;

\

~

'"

/

~ 1.0

~

50.2
0:
j: D.l

0.5

2.0

'"

w 1.6
li:

~

W 1.2

~

'\
0.1

1.0

~ = 250
IB

2.4

1/

0

>

l.
f'

2S"}

-40"~
lI.

./

2

I I
VCE = JV

w

./

w

2.8

2:

125°C

o

COCO

~0

VCE =JV

~ 5.0

..... 1IIIit

('1)('1)

(Te = 25 °e unless otherwise noted.)

I

5.0

"0

10

0.8

-

0.1

>=

IC - COLLECTOR CURRENT (AMPERES)

--

-40~v

-40"

;Z5;V

V

~"ci/

/

I--"

+12S"C

r-

IIV
'III

12S"C

I
I

1111
0.5

5.0

1.0

0.5

0.1

10

1.0

5.0 10

IC - COLLECTOR CURRENT (AMPERES)

IC - COLLECTOR CURRENT (AMPERES)

2

o

~

g;
~

3.0

5.0

2.5

fficn

1.0

-40"C
1.5

+25"C/IA

~I

1.0

IIiV/i/l

~

0.5

~o

~>

w
u

~
0.5

1.0

L1Mit'DETERMINEO

0.2 - f -

mi· 'i"i

I"-

"

0.5

~i25"'C

0.1

>

I"'

(Te = 25°e)

a,w
0'"

I"

0&\

2.0

1=!:;
~ ~ 2.0

E~

50

10.0

IC/I~ =15b

~

5.0

"

100

10

1

IC - COLLECTOR CURRENT (AMPERES)

IiIf

illi~cEO

0.1

10

25
50
15 100 125 150
TC - CASE TEMPERATURE ("C)

VCE - COLLECTOR·EMITTER VOLTAGE (VOLTS)

---------------2N6037, 2N6038, 2N6039--------------10
0

5.0

~

2.0

w

0

w

N

:::;

'"~
2

:3
0:

>

2.8

VCE - JV

w

~
~

2.8

VCE = JV
a::

a:
2.4
win

0.5

;L. h

"''''
r
1.6
~

,,'"

~;>

-2

-40"C

~P 1.2

III

0.8

"/

0.1

~'"

=1-

/

0.2

I-

ww

0.1

1.0

10.0

'C/'B' 250

2.4

",W

~ ~ 2.0

-i'o..

~

~~

I=~

1.0 _125"C

in

-

=

~~

-40C
F'25lc

- 12~.!J

2,0

"'0
=>

/11

z 1.6
~:!
!!!~

./

~§ 1.2

>1~

D.B
0.1

1.0

10

=

25"C

./
/

rn

Tz5"h
~

I-

I

0.1

Ic - COLLECTOR CURRENT (AMPERES)

IC - COLLECTOR CURRENT (AMPERES)

-4D"C

I

10.0

1.0.

IC - COLLECTOR CURRENT (AMPERES)

@
1.5

.tiL
Ic/lB = 250

II

II

.....

C-~~
0.1

1.0

10.0

IC - COLLECTOR CURRENT (AMPERES)

30

2.0

~

1.0

'"

0.5

~8

I II

0.5

40

OJ

!

~
;::

i:l

'"

~

5.0

ffi

'-- -40"C

50

~

ffi

I-

.-= =zFt

'"

10.0

13

iii

D&\

(Te= 25 °el

,",

'"

~
~

:E
;(

0.2

~ u

I-

ill iil
I

'"

LIMIT DETERMINED
cEO

10

:E

TIii

I

100

i

l!
o

VCE - COLLECTOR·EMITTER VOLTAGE (VOLTS) ~

4·10

20
10

'\

"
r-..

r-..

25
50
15 100 125 150
TC - CASE TEMPERATURE ("C)

POWER
TRANSISTORS

NPN
2N3713 thru 2N3716
PNP
2N3789 thru 2N3792

NPN/PNP complementary silicon power transistors are for
medium·speed switching and amplifier applications.

Complementary Silicon
Power Transistors
150 Watts

Package 98
TO·3

Maximum Ratings

(TC = 25°C unless otherwise noted)

PARAMETER

SYMBOL

2N3713, 2N3715
2N3789, 2N3791

2N3714,2N3716
2N3790, 2N3792

UNIT

VCB

80

100

V

Collector· Base Voltage
Coliector·Emitter Voltage

VCEO

60

80

V

VEB

7.0

7.0

V

Collector Current

IC

10

10

A

Base Current (Continuous)

Emitter·Base Voltage

IB

4.0

4.0

A

Power Dissipation

PD

150

150

W

Thermal Resistance

OJC

1.17

1.17

°C/W

TJ, TSTG

-65 to +200

-65 to +200

°c

Junction Operating and
Storage Temperature Range

Typical Performance Characteristics
Safe Operating Area 2N3713,
2N3715, 2N3789 and 2N3791

Safe Operating Area 2N3714.
2N3716, 2N3790 and 2N3792

5>-.

~

3

'"

1
0.7
0.5

,

0.3

-'"

0.2

B

!
0.1

10
7
5

';50",:::

250J.ls

"-

2

'1 5~0"s
'~

DCT05ms

,\ ~ \

1 ms

0.1

o

10

20

30

40

50

60

70

80

10 20

VCE - COLLECTOR·EMITTER VOLTAGE (V)

30

40

50

60

70

80

90

VCE - COLLECTOR·EMITTER VOLTAGE (V)

5·3

Electrical Characteristics

(TC = 25°C unless otherwise noted)

PARAMETER

(lC

= 20 mA,

IB

= 0)

MIN

SYMBOL

Collector· Emitter Sustaining Voltage (Note 1)

MAX

UNIT
V

VCEO(SUS)
2N3713, 2N3715,-

60

2N3789,2N3791
80

2N3714,2N3716,
2N3790, 2N3792
Collector-Emitter Cutoff Current
(VCE = 80V, VBE

= -1.5V)

mA

ICEX
2N3713,2N3715,

1.0

2N3789,2N3791
(VCE

= 100V, VBE = -1.5V)

2N3714,2N3716,

1.0

2N3790, 2N3792
(VCE

= 60 V, VBE = -1.5V, TC = 150°C)

2N3713,2N3715,

10

I

2N3789,2N3791
(VCE

= 80V, VBE = -1.5V, TC = 150°C)

2N3714,2N3716
2N3790, 2N3792

Emitter· Base Cutoff Current
(VEB

5.0
10
5.0

-

mA

lEBO

= 7V)

5.0

DC Current Gain (Note 1)
(lC = lA, VCE = 2V)

hFE
2N3713,2N3714,
2N3789,

25

~O

50

150

2N~790

2N3715,2N3716,
2N3791, 2N3792
(lc = 3A, VCE

=

2V)

2N3713,2N3714,

15

2N3789,2N3790
2N3715,2N3716,

30

2N3791, 2N3792
Collector-Emitter Saturation Voltage (Note 1)

V

VCE(SAT)
1.0

(lC = 4A, IB = OAA)

2N3789, 2N3790

(lC =5A, IB = 0.5A)

2N3713,2N3714

1.0

2N3715,2N3716

0.8

2N3791,2N3792

1.0

Base-Emitter Saturation Voltage (Note 1)

V

VBE(SAT)

(lC = 4A, IB = OAA)

2N3789, 2N3790

2.0

(lc = 5A, IB = 0.5A)

2N3713,2N3714

2.0

2N3715,2N3716,

1.5

2N3791,2N3792
Base-Emitter Voltage (Note 1)

V

VSE
1.5

(lc = 3A, VCE = 2V)
Current Gain-Bandwidth Product

MHz

fT
4.0

(VCE = 10V, IC = 0.5A, f = 1 MHz)
Small Signal Current Gain

hfe
4.0

(VCE = 10V, IC = 0.5A, f = 1 MHz)
Note 1: Pulse test - pulse width::; 300 !lS, duty cycle::; 2%.

5-4

Typical Performance Characteristics

(Continued)

2N3713 thru 2N3716
DC CUrrent Gain vs Collector

DC Current Gain vs Collector

Current 2N3713. 2N3714

Current 2N3715. 2N3716

111111

200

z

100 1-+-I-J.I.I'I!!t-f"l'i..wjjj---f-++IfHIH

i

;ii

~

50

/

100

>~

'"

~
8

~\

TJ' -40"C

50

25 l-t;j.ffllHt-+t-H-tttlI-"'~OOHl

l

0.7
0.5

II IIIli"

0.01

E

0.1

0.1

10

Base·Emitter Saturation
Voltage Variations

Gain Bandwidth Product vs
160

1+~1·5A

I~

0.6

"" "-

~2

~
-=
w>-

~"
>'"

140

~
z

0.8

0.4

I-- --TJ'25"C +tttHt--f
r- ----TJ.-41J"'C+++Hll--1
r- - - - TJ • 175"C +ttttlt--1

02

o

10

20

50 100 200

500 lk

;=

;;:
ill;;;

1\

o

2k

0.1

02 0.3 0.5 0.7 1

"'\

80

~

40

.P

20

"'\

60

o
2

1.6

"'\

100

'"

-I I

IB - BASE CURRENT (mAl

1.2

r-

120

Q

VCE' 6V

1--r-tt(NOTE21

0.8

Maximum Power Dissipation
vs Case Temperature

Collector Current

f-f-f-HItHH-+++++t-Ht,IC'

wo
~>

I

0.4

VBE - BASE·EMITTER VOLTAGE (VI

1.4

'ffi~
>-w
t:",
"'''
101;':;

- e-

VCE' 2V
(NOTE 21

I
a

IC - COLLECTOR CURRENT (AI

IC - COLLECTOR CURRENT (AI

12

TJ' 40"C-

0.3
0.2

I

11111111

o
10

T:"~5"J

~

liT

~

TJ=25"C IB=

5

II I
TJ '25"C

I

0.1

VCE' 2V

IW~I175jc

w

0.01

I

150

ffi

75

I
w

~
~

'-

z

;ii

ffi

Transconductance
10

115 r-rTTTTmr--r-TT1rrrmr-n-rmm

3

'\

1'\
o

25

."

50

75 100 125 150 175 200

Tc - CASE TErAPERATURE I'CI

IC - COLLECTOR CURRENT (AI

2N3789 thru 2N3792
DC Current Gain vs Collector

DC Current Gain vs Collector

Current 2N3789. 2N3790

Current 2N3791. 2N3792

200

I II)jlt··b

IT;lm!b

z

;ii

70

'"'I

30

~

50

p-

~

1

20

~

~
~
'"'I

100
70
50

~

20

'j

0.01

>-

0.1

~
8

w

2.B

"!:;'"

2.4

>
~

2.0

zr:31~'fl~~r9~

I

O.S

~

~

!2

'"

0.4 O.S 1.2 1.6

Forward Characteristics vs

Maximum Power Dissipation
vs Case Temperature

160
ALL TVPES
TJ" 25"C
~F 'ICIIB (FORCED GAINI

~
~

~

- VBE(SATI
-

ill
;;;

'"

~I~~

~

V~_ VCEISATI-P "~','ri

Q

~

o

140

10

r-

120

"'\

100

"'\

80

'\

60

'\

40

~ '\

20

a
0.1

"\
o

25

50

75 100 125 150 175 200

TC - CASE TErAPERATURE ("CI

IC - COLLECTOR CURRENT (AI

5-5

VCE = 2V
2

2.4 2.S 3.2

VBE - BASE·EMITTERVOLTAGE (VI

Collector Current

1.2

0.4

II II

10

0.1

VCE - 2
1.6

TJ = -40"C

0.1

IC - COLLECTOR CURRENT (AI

0

~
>-

0.3
0.2

E

3.2

~

0.7
0.5

I

0.01

10

TJ" 17S"C

Tr 25 ' C

~
~
:5

TJ' -411"C

10

IC - COLLECTOR CURRENT (AI

10
7
5

5

UL

30

w

FE - IB + IC80
I VC'E';'2'V
10

VCE.· 2V

Q

2~3?~~.,~~,379~
h _ Ie -ICBO

~

Transconductance

Tr 25"C

200

>-

TJ' -40"C

11111
1.1111111

TJ'17 5"C

300

z

100

>~

Q

500

Physical Dimensions

1.550

0.185
(4.699)

-(39'37)~ 0.250-0.300
--I
I

0.830
(21.082)

-----=----li11.176-12.192)

_1-

T

SEATING
PLANE

(6.350-7.620)
. 0.440-0.480)

0.039-0.0~
(0.991-1.092)

I

0.420-0.440
(10.668-11.176)

0.151-0.161
(3.835-4.089)

0.210-0.220
(5.334-5.588)

1 - Emitter

1.177-1.197
(29.896-30.404)

2 - Base
Case - Collector

TO·3 Metal Can Package 98
Order Number 2N3713. 2N3714. 2N3715. 2N3716.
2N3789. 2N3790. 2N3791 or 2N3792

5·6

NPN
2N5873,2N5874
PNP
2N5871, 2N5872

POWER
TRANSISTORS
These complementary silicon power transistors ·are
designed for general purpose power amplifier and switching
applications.
II

II

II

II

Complementary Silicon
Power Transitors
115 Watts

Low collector-emitter saturation voltage-VCE(sat) =
1.0 VOC max, @ IC = 4.0 AOC
Low leakage current - ICEX = 0.25 mAOe max
Excellent dc current gain-hFE = 20 min, @ IC =
2.5 A OC
High current gain-bandwidth product-fT = 4.0 MHz @
IC = 0.25 AOC

Package 98
TO-3

Maximum Ratings
PARAMETER

SYMBOL

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage

VCEO
VCB
VEB
IC

Collector Current-Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25° C
Operating and Storage Junction
Temperature Range

IB

2N5871
2N5873

2N5872
2N5874

60
60
5.0

80
80
5.0

7.0
15
2.0

7.0
15
2.0

115
0.658
-65 to +200

PD
,

TJ, TSTG

UNIT
V
V
V
A
A
A

-65 to +200

W
wfc
°c

Thermal Characteristics
PARAMETER
Thermal Resistance. Junction to Case

I
I

SYMBOL

Note 1: Indicates JEDEC reW.stered data. All above values meet or exceed

5-7

pre~ent

I
I

MAX
1.52

JEDEC registered data.

I

UNIT

Electrical Characteristics

(TC = 25°C, unless otherwise noted)

I

PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)

SYMBOL

I

MIN

I

MAX

2N5871,2N5873

60

2N5872, 2N5874

80

Collector Cutoff Current

mA

ICEO

(VCE = 30V, 18 = 0)

2N5871,2N5873

0.5

(VCE = 40V, IB = 0)

2N5872,2N5874

0.5

Collector Cutoff Current

mA

ICEX

(VCE = 60V, VBE(OFF) = 1.5V)

2N5871,2N5873

0.25

(VCE = 80V, VBE(OFF) = 1.5V)

2N5872,2N5874

0.25

(VCE = 60V, VBE(OFF) = 1.5V, TC = 150°C)

2N5871,2N5873

2.0

(VCE = 80V, VBE(OFF) = 1.5V, TC = 150°C)

2N5872,2N5874

2.0

Collector Cutoff Current

mA

ICBO

(VCB = 60V, IE = 0)

2N5871,2N5873

(VCB = 80V, IE = 0)

2N5872,2N5874

Emitter Cutoff Current

UNIT
V

VCEO(sus)

(lc = 100 mA, IB = 0)

I

0.25
0.25
1.0

lEBO

mA

(VEB = 5.0V, IC = 0)
ON CHARACTERISTICS
dc Current Gain (Note 1)

hFE
35

(lc = 0.5A, VCE = 4V)
(lc= 2.5A, VCE = 4V)

20

(lc = 7A, VCE = 4V)

4.0

Collector-Emitter Saturation Voltage (Note 1)

100

V

VCE(sat)

(IC = 4V, IB = O.4A)

1.0

(lC = 7A, IB = 1.75A)

2.0

Base-Emitter Saturation Voltage (Note 1)

VBE(sat)

2.5

V

VBE(on)

1.5

V

(lC = 7A, IB = 1.75A)
Base-Emitter ON Voltage (Note 1)
(lC = 2.5A, VCE = 4V)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 2)

fT

4.0

MHz

(lc = 0.25A, VCE = 10V, ftest = 1 MHz)
Output Capacitance
2N5B71,2N5B72

300

2N5873,2N5874

200

Small-Signal Current Gain

hfe

(lC = 0.5A, VCE =. 4V, f = 1 kHz)
*Indicates JEDEC registered data
Note 1: Pulse test: pulse width ~ 300 ,"s, duty cycle
Note 2: IT = Ihlel • Itest .

pF

Cob

(.VCB = 10V, IE = 0, f = 1 MHz)

~

2%.

5-8

20

Typical Performance Characteristics

Maximum Power Dissipation
vs Case Temperature

Safe Operating Area
20

140

3:
"

10

2N5871-2N5874

TJ ~ 200°C --t----+'Jrl-T-t--t\!-ti

I-HI-HI+---+--j-~,,+\~~
r~,

2NS811.1N5R13
lN5112,2NS874

~

20

~

o

25

50

0.3
0.2
5

75 100 125 150 115 200

TC - CASE TEMPERATURE lOCI

7

50 70 100

DC Current Gain vs Collector

Current 2N5873, 2N5874
SOD

z

~
:.,

1: _ _
0.070.1

020.3 0.50.7 1

2 3

200

VCE -4V

rr; ~ ;;:C'l'>l..H+l+I--++++H

1 ~1~~§~il!'II;
~ l:u-lmllllum
~

10 O

=TJ-25°C

so

3D

20

""'--

0.070.1

S 7

TJ ~ -SsoCf+j-'---=
-""'''''''d-AoH

-

lC - COLLECTOR CURRENT IAI

0.20.3 0.50.7 1

2 3

5 7

IC - COLLECTOR CURRENT IAI

Forward Characteristics

Forward Characteristics
vs Collector Current

vs Collector Current

2N5871,2N5872

2N5873, 2N5874

1'+J~2~OCrtTHHr~~~~

1.6

1.6

~

~
~

30

DC Current Gain vs Collector

300

~

20

Current 2N5871, 2N5872
SOD

2

10

veE - COLLECTOR-EMITTER VOLTAGE (VI

~
~

1.2

1.2

I
I

~

'":;::.,

0.8

>

0.8

>
0.4

0.4

~ 10.Y
~I

VCEISATI@IC/IO

o
0.070.1

0.20.3 0.50.71

2

3

57

0.07 0.1

'C - COLLECTOR CURRENT IAI

0.2 0.3 0.50.7 1

2 3

IC - COLLECTOR CURRENT IAI

5-9

57

Physical Dimensions

1.550

0.185
(4.699)

-(39'3~)~ 0.250-0.300
0.830
(21.082)

(6.350-7.620)
0.440-0.480)

----.Dl 1.176-12.192)

L
T

0.039-0.043
(0.991-1.092)

SEATING
PLANE

t.

t

0.420-0.440
(10.668-11.176)

1.177-1.197
(29.896-30A04)

1 - Emitter
2 - Base
Case - Collector

TO-3 Metal Can Package 98
Order Number 2N5871. 2N5872.
2N5873 or 2N5874

5-10

POWER
TRANSISTORS

NPN
2N5881, 2N5882
PNP
2N5879, 2N5880

These complementary silicon high power and power
transistors are designed for general-purpose power amplifier and switching applications.

Complementary Silicon
Power Transistors
160 Watts

• Collector-emitter sustaining voltage
VCEO(sus) = 60V min - 2N5879, 2N5881
= 80V min - 2N5880, 2N5882
• dc current gain-hFE = 20 min @ IC = 6A
• Low collector-emitter saturation voltage-VCE(sat) =
1V max @ IC = 7A
.• High current-gain-bandwidth product-fT = 4 MHz
min@ IC= 1A
• Recommended for new circuit designs

Package 98

TO-3

Maximum Ratings*
PARAMETER
Collector-Emitter Voltage

SYMBOL

2N5879

2N5880

2N5881

2N5882

UNIT

VCEO

60

80

V

Collector-Base Voltage

VCB

60

80

V

Emitter-Base Voltage

VEB

5.0

5.0

V

Ic

15

15

A

30

30

5.0

5.0

Collector Current -

Continuous
Peak

Base Current

IB

Total Device Dissipation @TC = 25°C

PD

Derate above 25° C
Operating and Storage Junction

TJ.Tstg

A

160

160

W

0.915

0.915

wtc

-65 to +200

-65 to +200

°c

Temperature Range

Thermal Characteristics
PARAMETER

SYMBOL

MAX
1.1

Thermal Resistance, Junction to Case

I
I

UNIT

'.
*Indicates JEDEC registered data. limits and conditions differ on some parameters and re-registration reflecting these changes has
been requested. All above values meet or exceed present JEDEC registered data.

5-11

NO

COCO
COCO

Electrical Characteristics *

It)lt)

ZZ
NN

(TC = 25°C unless otherwise noted)

I

PARAMETER

SYMBOL

I

MIN

I

MAX

I

UNIT

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
IC = 200 mA, IB = 0)

V

VCEO(sus)
2N5879,2N5881

60

2N5880, 2N5882

80

Collector Cutoff Current

mA

ICED

(VCE = 30V, IB = 0)

2N5879,2N5881

1.0

(VCE = 40V, IB = 0)

2N5880, 2N5882

1.0

Collector Cutoff Current

mA

ICEX

(VCE = 60V, VBE(off) = 1.5V)

2N5879,2N5881

0.5

(VCE = 80V, VBE(off) = 1.5V)

2N5880, 2N5882

0.5

(VCE = 60V, VBE(off) = 1.5V, TC = 150°C)

2N5879,2N5881

5.0

(VCE = 80V, VBE(off) = 1.5V, TC = 150o,C)

2N5880, 2N5882

5.0

Collector Cutoff Current

mA

ICBO

(VCB = 60V, IE = 0)

2N5879,2N5881

0.5

(VCB = 80V, IE = 0)

2N5880,2N5882

0.5

Emitter Cutoff Current

1.0

lEBO

mA

(VEB = 5V, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)

hFE

(lc = 2A, VCE = 4V)

35

(lc = 6A, VCE = 4V)

20

(lc = 15A, VCE = 4V)

4.0

Collector-Emitter Saturation Voltage (Note 1)

100

V

VCE(sat)

(lC = 7A, IB = 0.7A)

1.0

(lc = 15A, IB = 3.75A)

4.0

Base-Emitter Saturation Voltage (Note 1)

VBE(sat)

2.5

V

VBE(on)

1.5

V

(lC= 15A, IB = 3.75A)
Base-Emitter On Voltage (Note 1)
(lC = 6A, VCE = 4V)
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product (Note 2)

fT

MHz

4.0

(lc = lA, VCE = 10V, ftest = 1 MHz)
Output Capacitance
(VCB = 10V, IE = 0, f = 100 kHz)

pF

Cob
2N5879, 2N5880

600

2N5881, 2N5882

400

Small-Signal Current Gain

hfe

(IC = 2A, VCE = 4V, f = 1 kHz)
";Indicates JEDEC registered data
Note 1: Pulse test: pulse width ~ 300 jlS, duty cycle ~ 2%.
Note 2: IT = Ihfel • f test .

5-12

20

Typical Performance Characteristics

Maximum Power Dissipation
Vs Case Temperature
160

~

'\.

140

~ 120
;::
100

,

2k

0

80

'"
;:.

60

w

l1!
I

5
~

~

::
ill

'"
'"

~
8

40

"\

20

I

o

25

SO

~

:3
I

0.5

SECONOBREAICDOWNUMIlED
---TIi£RAlAlLIAIJTATIONfilTC~25

;;: lOO

~

g;

~
~

Q

I
w

~
~

200
100
10

so

==

10

.,;;:
...'"

~
~

-TJ = 25'C

~

Q

TJ' -55'C

I

1111111
0.20.30.50.11

w

,

lO
20

~
~

lk
100
500

VCE =4V

r-

lOO
200

5110

III"~

20

0.2 0.3 0.50.11

'"'"
":>
I

O.B

:>

0.4

"

5 1 10

Forward Characteristics

Forward Characteristics
vs Collector Current

i)~5!~1

!:;

l

vs Collector Current

,

TJ!MI
1.6

I
I

Ifilii
""

E
w

'"~

VBE(SATl@IC/IB=10
Tj IIIi..d:='

ii
~CE=4V I

Q

:>

V~EI(~A~) ~~.'C/IB ~

O.B

1/

I

:>

VBE@VCE=2V

0.4

-1-'i'I'~

2 l

In

I111111
"" I

1.2

VCE(SATI ~:c/IB' 10

VCE(SAT) Ii! Ic/lB = 10
0.20.l 0.50.1 1

20

2N5881.2N5882

fI

1.6
1.2

2

IC - COLLECTOR CURRENT (A)

2N5879. 2N5880

w

~

111111

IC - COLLECTOR CURRENT (A)

E

~~J-150'C

100
TJ= 25'&
10 F
50
lO FTJ = -55'C
20
10

2 l

5 10 20 50 100
0.10.2 0.5 1
VR - REVERSE VOLTAGE (V)

DC Current Gain vs Collector
Current 2N5881. 2N5882

~'C

o
5 1 10

,~

0.2 0.3 0.50.1 1

20

.;..,2 3

5 1 10

IC - COLLECTOR CURRENT (AI

IC - COLLECTOR CURRENT (A)

5-13

~

- - - LL.2N5B:LNP)
- - - - 2N5BBl. 2N5B82 (NPN)

60

1
2 3 5 7 10 20 lO SO 70100
VCE - COLLECTOR EMITIER VOLTAGE (VI

VCE=4~=

-

~"bl

100

C

!$INGlEPUlSEI
CURVUAPPlVBELOWRAUOVC£O

DC Current Gain vs Collector
Current 2N5879. 2N5880

.'"...

~I,;;;

300
200

20·

NN

ZZ

0'10'1
0000
0000

ct

~

--BONDING WIRE LIMITED

0.2
0.1

75 100 125 ISO US 200

·2

SOD

::

Te - CASE TEMPERATURE ('C)

lk
100
500

100

z

::

.y 0.3

I'\,

o

w

TJ = 25'C

O!:;b

~

Q

'\

~~

lk

~

'"
i'l

Q

~

Junction Capacitance
vs Reverse Voltage

Safe Operating Area

ON

Physical Dimensions

1.550

t'.

' - ( 3 9 . m a r 0.250-0.300
0.185 -I
0.830
(6.350-7.620)
(4.699)
I (21.082)
0.440-0.480)

~11.176-12.192)

L
T

0.039-0.043
- (0.991-1.092)

SEATING
PLANE

t

t

0.420-0.440
(10.668-11.176)

0.151-0.161

!

I

(3.835-4.089) ~

1.050
(26.67)

-...!"---.

0.210-0.220
(5.334-5.588)

I

0.655-0.675
(16.637-17.145)

1.177-1.197
(29.896-30.404)

1 - Emitter'
2 - Base
Case - Collector

TO-3 Metal Can Package 98
Order Number 2N5879, 2N5880,
2N5881 or 2N6882

5-14

~

NPN
2N6055,2N6056
PNP
2N6Q53, 2N6054

POWER
TRANSISTORS

These Darlington complementary silicon power transistors
are designed for general-purpose amplifier and low-speed
switching applications.

Darlington
Complementary Silicon
Power Transistors
100 Watts

• High dc current gain - hFE = 3000 typ @ IC = 4A
• Collector-emitter sustaining voltage - @ 100 rnA
VCEO(sus) = 60V min - 2N6053, 2N6055,
2N6298, 2N6300
= 80V min - 2N6054, 2N6056,
2N6299,2N6301

~
~ U

• Low collector-emitter saturation voltage
= 2V max @ I C = 4A
VCE(sat)
=, 3V max @ I C = 8A
Monolithic construction
• shunt
resistors

with

~

Pack ago 98

TO·3

built-in

base-emitter

Maximum Ratings *
PARAMETER

2N6053
2N6055

2N6054
2N6056

UNIT

60

80

V

VCB

60

80

V

VEB

5.0

5.0

V

IC

8.0

8.0

A

16

16

120

120

SYMBOL

Collector-Emitter Voltage

VCEO

Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current

IB

Total Device Dissipation

@

TC = 25°C

100

75

W

0.571

0.428

wfc

-65 to +200

-65 to +200

°c

PD

Derate Above 25° C
Operating and Storage Junction Temperature
Range

TJ. TSTG

mA

Thermal Characteristics
PARAMETER

SYMBOL

MAX

UNIT

Thermal Resistance. Junction to Case

OJC

1.75

°C/W

*Indicates JEDEC registered data

Schematic Diagrams
COLLECTOR

COLLECTOR

NPN
Z N 6 0 5 5 r - - - - - ..... - ,
ZN6056
BASE

ZN:O~~

I

I

I...

: I ~8k 1 ~60~
L _____

ZN6054

~~.:

BASE

r

I

-

-

I'"
' I I-A"'1k

-

-

-

..... -

I ~60'"

,

I
." I
""
I

L_-":~ _ _ ~_..J

r--.J

EMIITER

EMITTER

5·15

Electrical Characteristics *

(TC = 25°C unless otherwise noted)

,

PARAMETER

I

SYMBOL

I

MIN

I

MAX

I

UNIT

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)

V.

VCEO(sus)

(lc=100mA,IB=0)

2N6053, 2N6055

60

2N6054,2N6056

SO

Collector Cutoff Current

mA

ICEO

(VCE = 30V, IB = 0)

2N6053, 2N6055

0_5

(VCE = 40V, IB = 0)

2N6054,2N6056

0_5

Collector Cutoff Current

mA

ICEX

(VCE = Rated VCB, VBE(off) = 1.5V)

0.5

(VCE = Rated VCB, VBE(off) = 1.5V, TC = 150°C

5.0

Emitter Cutoff Current

mA

lEBO
2.0

(VBE = 5V,IC= 0)
ON CHARACTERISTICS (Note 1)
dc Current Gain

hFE

(lc = 4A, VCE = 3V)

750

(lc = SA, VCE = 3V)

100

Collector-Emitter Saturation Voltage

lS000

V

VCE(sat)

(lC=4A,IB=16mA)

2.0

(lC= SA,IB = SOmA)

3.0

Base-Emitter Saturation Voltage

V

VBE(sat)

(lC=SA,IB=SOmA)

4.0

Base-Emitter On Voltage

V

VBE(on)
2.S

(lc = 4A, VCE = 3V)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Current

V

Ihfel

Transfer Ratio
(lc = 3A, VCE = 3V, f = 1 MHz)

4.0

Output Capacitance
2N6053, 2N6054

300

2N6055, 2N6056

200

Small-Signal Current Gain

hfe

(IC = 3A, VCE = 3V, f = 1 kHz)
*Indicates JEDEC registered data
Note 1: Pulse test: pulse width = 300 MS, duty cycle

pF

Cob

(VCB = 10V, IE = 0, f = 0.1 MHz)

300

~

2%_

5-16

Typical Performance Characteristics

Maximum Power Dissipation
Safe Operating Area

vs Case Temperature
100

~
z

I I I

I\.

2i
c;
0:

~

60

Q

I-

ffi

0:

B

40

'\.

20

25

~

I\.

50

~

5

""

SECOND BRfA~~~WN LIMITED
--BONDlNGWIRELIMITED
___ THERMAL LIMITATlON@Te'25 t

[SINGLE PULSE!

2

3

5 7 10

lIll60Sl.2NG054PNP
----21116055,21116056I\1PIII

20 lO 5070100

I

2

5 10 20

VCE - COLLECTOR·EMITTER VOLTAGE (V)

50 100200 500 Ik

f - FREDUENCY (kHz)

Junction Capacitance vs

de Current Gain vs Collector

de Current Gain vs Collector

Reverse Voltage

Current 2N6053. 2N6054

Current 2N6055. 2N6056

r-

TJ

~

...

20k

~ ~5~C

"

100

"
~

l-

i

~

Cob

"cI
w

~

1-__ 2I\1fiD53.2N6~:4IpNP
5 10 20

50 100

L

2k

V

Ik
700
500

~

TJc 25°C

C=

B

V

"cI

~TJ--55°C

"

'k

5 7 10

~17

TJc -55'C
III

0.1

IC - COLLECTOR CURRENT IA)

0.20.3 0.50.7 I

TJ~ 25~C

TJ"25'C
·~.5

~

~

w

w

'"""

L.;'
1.5

VSEJ:~

!:;
=
>

L

I

1.5

>

>

0.5

vSE@VCE c 3V

i""'"

i-'

VSE(satl@IC/ISc250

VSE(rl11UHfO

IIJ.U.I!--"'"

VCE(satl@ICnS c 250

VCEI.. !)@IC/lsc250 .
0.5
0.1

0.20.3 0.50.7 I

2 3

0.1

5 7 10

0.20.3 0.50.7 I

2 3

5 7 10

IC - COLLECTOR CURRENT (A)

IC - COLLECTOR CURRENT (A)

5-17

2 3

5 7 10

IC - COLLECTOR CURRENT (A)

Forward Characteristics vs
Collector Current 2N6055.
2N6056

2.5

I

I-

300
200

Forward Characteristics vs
Collector Current 2N6053.
2N6054

>

C

~

2 3

TJ 25°'C

/

500

0.2 0.3 0.50.7 I

150°C

3~11

C

V

l'
2k

w

III

D.'

TJ

5k

I-

VR - REVERSE VOLTAGE (V)

'"""
~

10k

"
~

TJ c I50'C

3k

300
200

---;i,mS05§.2N6D56 NPIII

30
0.1 0.2 0.5 I

10k
7k
5k

VCE

I

C

_,,;b

I

20k

VCE 3V

70
50

~
~

0.5

75 100 125 150 175 200

lOO

200

500
300
~ 200
;;;
100
~ 50
30
I
:f 20
10
~

2N605J.ZN&O~:~

2N6504,21116056

0.2
E
0.1
0.05

"

i""

~

VCE=lVOC
IC - JAOC

5k
3k
2k
Ik

I-

.~

O"'"~""

I

TC - TEMPERATURE I'C)

I-

5

10k

"~

."

(~
~,

Q

~

";;;"""

20
10

0:

~
I

5

"- I\.

Q

Small Signal Current Gain
TJ 200°C
C

2N6053 THROUGH 2N6056

80

;::
~

50

Physical Dimensions

0.185
(4.699)

L
T

rt
--l
I

1.550

( 3 9 ' 3 7 ) w 0.250-0.300
0.830
(6.350-7.620)
(21.082)
0.440-0.480)

.

------.L(11.176-12.192)
0.039-0.0~r---

(0.991-1.092)

SEATING
PLANE

t

OA20-0.440
(10.668-11.176)

0.151-0.161
(3.835-4.089)

0.210-0.220

1.177-1.197
(29.896-30.404)
TO·3 Metal Can Package 98
Order Number 2N6053. 2N6054.
2N6055 or 2N6056

5·18

STYLE 1:
Pin 1: Emitte~
2: Base
Case: Collector

...

."

Process 35 NPN RF-HF Power Amplifier

o
o

(1)

en
en

DESCRIPTION
Process 35 is a double diffused silicon epitaxial
device.

APPLICATION
This device is designed for use in the output stage
of 4W AM Citizens Band (27 MHz) transmitters
with ,capabilities to withstand infinite VSWR at
rated 'output.

PRINCIPAL DEVICE TYPES:
TO-39
TO-126
TO-220

PARAMETER

MRF8004
MRF472
2SC1678

TEST CONDITIONS

MIN

TYP

POUT

f = 27 MHz, Ic (Avg) = 415 rnA, (Figure 1)

3.0

3.5

W
%

MAX

UNITS

1)

Vcc = 12V, PIN = 0.4W

60

70

hIe

Ic = 100 rnA, VCE = 5V, f = 20 MHz

6.0

12

Cob

V CB = 10V

25

35

HFE

Ic = 100 rnA, VCE = 1V

30

70

150

V CES

Ic = 1.0A, IB = 100 rnA

0.2

0.5

BV CER

Ic = 1 rnA, RBE = 10n

65

BV EBO

IE = 100pA

3

ICBO

V CB = 40V

10

J1.A

ICED

VCE =40V

100

J1.A

lEBO

V EB = 2.0V

10

SOA

V CE = 30V, t = 1 sec

V

0.1 L.l..llillW...LJ.J.1llUl-LllllllU
1
510
50100

"

VeE - COLLECTOR EMlnER VOLTAGE (V)

6·3

J1.A
rnA

Safe Operating Area Curve

VeE - COLLECTOR EMITTER VOLTAGE (V)

V
V

500

Safe Operating Area Curve

pF

W
CJ1

Process 35,
Base-Emitter Saturation
Voltage vs Collector
Current

Collector-Emitter
Saturation Voltage vs
Collector Current

DC Current Gain vs
Coltector Current

IcvsVCE
.00

~

IC=IO
Is

1.1

i:s

z

!~
~i
~!
,<

:i

i,
g

100
50

-~
.~

ill<

1
0.'

0.01'

0.1

1.0

0.050.1

10

~

0.10

1.0

'I
.!!

0.01

0.1

1.0

Is =4mA

""'~A

'00

1,1'2~A

200

Is=lmA

100

10

VeE - COLLECTOR·EMITIER VOLTAGE (VI

Maximum Power
Dissipation YS
Case Temperature

Power In vs Power Out

~

VeE =5V

•

·t-H-t-+++-::P-1F!9

'00

10

!'°O~IIII

lOOMHz

5

250
H,

0

50 MHz
1

10

4 I-t-t-~¥l-t---t--w
... en
::...
1

_

~

55':

we:
g>

• •

0.4

0.2

I-HHIllfl--I-

0.1

'-.w..J...W"'-...wCIJJJIll..--'-.J..J..I~

100

~

>

. Collector-Base and Em itterBase Capacitance vs Reverse
Bias Voltage

Contours of Constant Gain

Bandwidth Product (ftl

Collector Current

2w

lk
BOO
600
400

10

2w

'"~ o.s

'"

">

....

.:

~

O.B

.!> 200
w

>

::'"'

a:

~
I

IC - COLLECTOR CURRENT (rnA)

IC - COLLECTOR CURRENT (rnA)

Base-Emitter ON Voltage v.

..iii~

0.2

lk

IC - COLLECTOR CURRENT (rnA)

a:

0.4

I

10

~

O.B

~

::iCi:

z

"

~

0.4'

0.2

::
:l

I
w

;,

20

'"'

>

i
>

I-

100
BO
60
40

0:;

1'0
10
IC - COLLECTOR CURRENT (rnA)

100

:tIDi:

0.1

lk

1.

Safe Operating Area
T0-126

Collector Current
4k
3600
3200

1200

-I-

I\-

2400
2k

~
;: 1600

100ms

"

2S0O
]

IF ;10

I\.

r-..

"-

,dj

~"\.. 1~':"1

~~

liMIT
DETERMINED
BY BVCEO

tOFF

,

1'1

BOD

-\~~

i'

400

o

0.01
100

10

lk

350

100

10

IC - COLLECTOR CURRENT (rnA)

1.

VCE - COLLECTOR VOLTAGE (V)

Safe Operating Area
TO-202

Maximum Power Dissipation

vs Case Temperature
3D

3:

10ms

~

-

~

0:1

~
:3

~i-O~12~

I-d.

~

a:

"

20

~Ioms

loJ/W1-

j'.

i'
10

LIMIT

I
~

DETERMINE~_

r

I I tli~ir

0.01
10

100

o
lk

o

TO-202 B.33°C/W

50

100

TC - CASE TEMPERATURE (OC)

VCE - COLLECTOR VOLTAGE (V)

6-6

10

REVERSE BIAS VOLTAGE (V)

IC - COLLECTOR CURRENT (rnA)

Typical Switching Time vs

Cib,IE -0

150

100

...

"'tJ

Process 37 NPN Medium Power

o(')

CD

(J)
(J)

1

1
- - - -

DESCRIPTION

,;:::::::::,'-----1

eN

1

Process 37 is a double diffused silicon epitaxial
planar device. Complement to Process 77.

APPLICATION
This device was designed for general purpose
medium power amplifiers and switching circuits
that require collector currents to 1A.

0.031
(0.181)

PARAMETER

MIN

TEST CONDITIONS

BVCEO

Ic = lOrnA

25

BVCBO

Ic = 100llA

50

BV EBO

IE = 100llA

5

ICBO

VCB = BVCEO

MAX
45

UNITS
V
V

7
50

V
500

nA

100

IlA

lEBO.

V EB = 5V

hFE

Ic = 500 rnA, VCE = 1V

VCE(SAT)

Ic = lA, IB = O.lA

0.2

0.5

V

VSE(SATI

0.95

1.5

V

fT

Ic = lA, Is = O.lA
Ic = 100 rnA, VCE = 10V

Caso

Vcs = 10V

0.1
100

TO-202 (Package 35)

92 PLUS (Package 91)

NSD102
NSD103
NSDU01
NSDU01A

92PU01
92PUOIA

TO-202 (Package 36)

400

MHz

300
20

AVAILABLE DEVICE TYPES

/

TYP

TO-126 (Package 38)
BD135

D42C1
D42C2
D42C3
D42C4
D42C5
D42C6
NSE180
92 PLUS (Package 90)
92PE37A
BD373A

6-7

pF

.....

.....

C")

Process

en
en
Q)

..
(J

o

0..

Typical Normalized Pulsad

Typical Normalized Pulsad
Current Gain vs Collector
Current

Current Gain VB Collector
Current
10

0

10

~

~

~

0

~~
~~
~~

,,~

UU

~,
1

~

D.'

~

os

,:

D.'

D.2
D.l L-J..l.l.lliliLl-LlJI.LUll-l.lJJillU
1k
10
'DO

D.'
1D

'DO

Ik

Voltage vs Collector
Current

1.,

D4

..

~

!l
D.'

~,

lc""25"C

I

"

D.'

~

~

D>

Tc "'lZ5°C

~

"

~ 'DO
5.

~=10

~

~,

Current

D.'
~

~

D.S

Gain Bandwidth
Product vs Collector

Collector-Emitter

vs Collector CUrrent

~

10

Ie - COLLECTOR CURRENT (mAl

Ie - COLLECTOR CURRENT (mAl

Base-Emitter
Saturation Voltage

D.'

.}

Tc

2

T,·,,-c'T.i\'1 L

ii,
.!"

10

'DO

1k

10

Ie - COLLECTOR CURRENT (mAl

'00

VCE=;O~

"D
'DO

'DO

:i\

"-4D"C1i~

D.'

'DO

1

10

Maximum Power Dissipation
vs Ambient Temperature

(TO-202)
1D

1D

~

II!
~

:~

"
~~ "

'00

Ie - COllECTOR CURRENT (mAl

Safe Operating Area
TO-202

4D

,.

D

Ik

Ie - COLLECTOR CURRENT {mAl

Collector-Base Capacitance
vs Collector-Base Voltage

.11

~

2

~~

TtAB

~

1'\

~

~,

,~

g5
oJ

D.S

g,

Ie - COLLECTOR CURRENT (rnA)

~
,:

Base-Emitter uON"
Voltage vs Collector
Current

1D

r.TACTABREMQVEOI

D1

-\illU~,.

THIS LIMIT
DETERMINED

.E

BVCEO

0.01

0

D

VeB -

1D

"

"

COLLECTOR·SASE VOLTAGE (V)

D
1D

'DO

VeE - COLLECTOR-EMITTER VOLTAGE (V)

6-8

o

25

50

15

"

100

~

125150

TA - AMBIENT TEMPERATURE ('C)

37

Process 38 NPN Medium Power

...o"'C

n
en
en
W

(1)

DESCRIPTION

(X)
Process 38 is a double diffused silicon epitaxial
planar device. Complement to Process 78.

APPLICATION
This device was designed for general purpose
medium power amplifier and switching circuits
that require collector currents to 1A.

0.031
10.7811

PARAMETER

MIN

TEST CONDITIONS

TVP

MAX

UNITS

BV CEO

Ic

= 10 rnA

45

80

V

BV CBO

Ic

= 100llA

90

160

V

BV EBO

IE

ICBO

= 100llA
= BV CEO

5

V CB

500

nA

lEBO

V EB

100

IlA

hFE

Ic

= 100mA, VCE = lV

VCE(SAT)

Ic

= 500 rnA,

IB

= 50 rnA

0.2

0.5

V

VBE(SAT)

Ic

= 500 rnA,

IB

= 50 rnA

0.8

1.4

V

fT

Ic

COBO

= 100 rnA, VCE = 10V
= 10V

250

V CB

7
50

= 5V

0.1
150

92 PLUS (Package 91)

NSDU05
NSD6178
NSD6179

92PU05
BD371B
BD371C

TO-2o.2 (Package 36)

TO-126 (Package 38)

D42C7
D42C8
D42C9
NSE181

BD137

500

MHz
15

AVAILABLE DEVICE TYPES
TO-202 (Package 35)

V

92 PLUS (Package 90.)
92PE37B
BD373B
BD373C

6-9

pF

co

('I)

Process 38

U)
U)

Q)
(J

e

c..

Typical Normalized Pulsed
Current Gain vs Collector,

Typical Normalized Pulsed
CUrrent Gain vs Collector

8ase~Emitter "ON"
Voltage vs Collector

Current

Current

Current

10~_

10 _ _

Iv'ii~~ ,,'ci I~11,..I;I;III:, ...;.;,,-!-lUII
~'1"'0~~

I IIllJ

D·,m~,\,;"•

D.6

1111

I-HI+H
IIII-ltll-tl-ttIlltfIItI--+ttttlttl

0.2HH-IfttIIH

Ul
D.I L..JLlJJillIl-LlJ.llJ1Il-U-LWW

0.1 L.Jc..J..llllllL....l...LlJlliIIl-..L.l.l.LWlI
100
1k

10

I

100

,.

Ie - COLLECTOR CURRENT (rnA)

Ie - COLLECTOR CURRENT (mA)

~

k
f

r!~'

VC!:EI~,(~~~~~

0.8

cc

0.11

i._

IU

i,

YS Collector Current

111I1I~/t

VeE "'1Y1125 Clbi'
O

VCE ""QV 112S"CI

0.2

1111111
1111111

J

,.

100

'0

Ie - COLLECTOR CURRENT (mAl

Collector-Emitter
Saturation Voltaga
vs Collector Current

Base-Emitter
Saturation Voltage

tV '-40°,~I~

-,ov= HD'1{l-l

VeE

~

Gain Bandwidth
Product vs Collector
Current
~ 500 r-T'TIrmT"-T'TIrmTn-T"T""rmm
tl!

"
d.•

1-H44!!1H-f-HcltttH-f-HHtttH

I-f-Hftttttl-I+ftttttl- VeE ",ov

roo l-t-Hftttttl-t-HHffitl-t+HttHI
-

i

300

I-l+ftttttl-l+ftttttl-++I-ItIttl

zoo l-t-Hftttt1l-::J..ffHlltl-HlHlffil

:;

0.2

~ 100

1-H44!!111-I+flfHlf-++1-HIfH

,

o L....l.LJ.lJWL...L.ljWlllC-LJ.JJJ.LW
1

10

100

~r+Kmtl--t+Hffitl--t+~

J:

Ik

10

Ie - COLLECTOR CURRENT (rnA)

10

100

Safe Operating Area
TO-202

VI

30

~
:l;

20

~

!;
~

,

j

H-+-t+lf++-t+t-++lH-l
~++1-rt++1-t+~~

10

-

I

I

=FF

10"",

i\

DC

rttfl1-rFF~~:tti

~

~TA8

1'\

m.

~

!;

'0

T ArrAS REMOVED)

0.1

,

r==THIS LIMIT

.E

~·~d:::HA~"""" ~

~'Er~RMINE~rflml
BY BVCEO

0.01

20
30
'0
VeB - COLLECTOR·BASE VOLTAGE IV)

Ambient Temperature

(TO-202)

10
2

"

Maximum Power Dissipation

Collector·Base Cspaci-

. tance vs Collector-Base
Voltage

5

100

Ie - COLLECTOfl CURRENT (mAl

Ie - COLLECTOR CURRENT (rnA)

·0

10

I

100

VeE - COLLECTOR-EMITIER VOL lAGE (VI

6-10

o

25

50

75

fOO

125

TA - AMBIENT TEMPERATURE (OC)

ISO

...

"'C

Process 39 NPN Medium Power

on

C'D

CJ)
CJ)

DESCRIPTION

I

~
PARAMETER

APPLICATION
This device was designed for general purpose
medium power amplifier and switching circuits
that require collector currents to 1A.

n.D31

'0.1811

TEST CONDITIONS

BV CEO
BV CBO

Process 39 is a double diffused silicon epitaxial
planar device. Complement to Process 79.

l

.

-

(,.)

to

0.0"-1
(0.1811

MIN

TYP

MAX

UNITS

Ic = lOrnA

80

110

V

Ic

160

220

V

500

nA

100

IlA

=

100llA

BV EBO

IE = lOOIlA

ICBO

V CB = BV CEO

lEBO

V ES = 5V

hFE

Ic = 100 rnA, VCE = lV

VCE(SATJ

Ic = 500 rnA, Is = 50 rnA

0.2

0.5

V

VBE(SATJ

Ic = 500 rnA, Is = 50 rnA

0.95

1.5

V

fT

Ic = 100 rnA, VCE = 10V

120

COSO

5

V

7

50
0.1
100

350

MHz
12

Vcs = 10V

AVAILABLE DEVICE TYPES
TO-202 (Package 35)
NSD104
NSD105
NSD106
NSDU06
NSDU07
92 PLUS (Package 90)
92PE37C
BD373D
92 PLUS (Package 91)
92PU06
92PU07
BD371D
TO-126 (Package 38)
BD139
6·11

pF

0)
('I)

Process 39

(/)

(/)
Q)
(J

...o

Q.

Typical Normalized Pulsed
Current Gain vs Collector

Typical Normalized Pulsed
Current Gain vs Collector

Current

lin_
Current

10
10

111111
VCE"1V1125°C)

D.'
D.2

0.1

Base-Emitter "ON"
Voltage vs Collector
Current

v~" IV (215~lh

1.2 rT"TTTTTTlO1==="",rnm

~

~.

~

I

~.!=tJtdI~~

DB
0.6 l.-l-HmFlf+j-Hlllbl~

a:

os

VeE = 1~ .'I-:rel

111111

0.2

Illlllill J
10

~

TOO

f-H-tfjfjjl!-!+ffllIl!-++++ttN

0.1 LJLJ.!.lllIlL....l-lllWll---'..l..l.lilW
lDD
1k
TO

1k

Ie - COLLECTOR CURRENT 1m!\}

Ie - COLLECTOR CURRENT {mAl

Base·Emitter
Saturation Voltage
vs Collector Current

~

0.4

t!jj:tl!l!t;;;;Jt;I-I~f.;~

~

0.2

H-tt-lttttH-tt-lttttHH-ttfHtI

J

10

lDD

Ie - COllECTOR CURIlENllmA)

Collector-Emitter
Satur~ion Voltage
vs Collector Current

Gain Bandwidth
Product vs Collector
Current

~

0

1.2

2
0

~

1

r.
~=:ffl
f-'T,. ~~!~-

~

D8~

~

D.'

~

~

:i,
~

~

1111

~

~

0.4

;

11111
11111

~,

IIIII

~

TO

100.

1k

~=
r.

!

10

~

0.'

..

~

j.jojj!I
Tc-~

oz

0.'

Tc=-40"C

100

Ii!

~

20r+~~r+~~~~HH

~

r+~~t+~~rt~HH

~8

1k

Maximum Power Dissipation
vs Ambient Temperature
(TO·202)
TO

I

IOO,us

"

lDD

10

Ie - COLLECTOR CURREN~ (mAl

~

30 r+~~r+~~~~HH

,

7'

1k

Safe Operating Area
TO·202

-

~

TOO

...

TO

i
..

v;, ~ \~IJI

Ie - COLLECTOR CURRENT (mAl

Collector-Base Capacitance vs Collector-Base
Voltage

~

ZOO

.~,

TCI},I~~!,~ ~
TO

Ie - COLLECTOR CURRENT (mAl

300

~

,.~

Tc =25'C]

02

;

f

:;

04

500
400

~\A8

~
~

~

TO

OLLLL.LL..Ll..LJ...LLLLLJ
o
20
TO
3D
Vea - COLLECTOR BASE VOLTAGE tV)

--;-- T AtTAB REMOVED)

0.1

~\mtAJ~,."

,

""

TO

o
TOO

VeE - COLLECTOR·EMITTER VOL rAGE (VI

6·12

o

"

so

75

100

125

TA - AMBIENT TEMPERATURE (OC)

150

...

"0

Process 77 PNP Medium Power

o(')
C'D

en
en
DESCRIPTION

O.O"-j

I

(0.787)

~
....,

Process 77 is a double diffused silicon epitaxial
planar device. Complement to Process 37.

APPLICATION
This device was designed for general purpose
medium power amplifier and switching circuits
that require collector currents to 1A.

PARAMETER

TEST CONDITIONS

BV CEO

Ic~10mA

MIN

TYP

25

BV CBO .

Ic

~

100,uA

40

BV EBO

IE

~

100,uA

5

ICBO

V CB

~

BV CEO

~

5V

MAX
45

0.1

V
500

nA

100

,uA

lEBO

VES

hFE

Ic

~

500 mA, VCE

VCE(SAT)

Ic

~

lA, Is

~O.lA

0.3

0.5

VSE(SAT)

Ic

~

lA, Is

~

1.0

1.5

fT

Ic

~

100 mA, VCE

Coso

Vcs

~

lV

50

O.lA
~

10V

92 PLUS (Package 91)

NSD202
NSD203
NSDU51
NSDU51A

92PU51
92PU51A
BD370A
TO·126 (Package 38)

TO·202 (Package 36)

B0136

D43Cl
D43C2
D43C3
D43C4
D43C5
043C6
NSE170
92 PLUS (Package 90)
92PE77A
B0372A

6·13

V
V
MHz

20

AVAILABLE DEVICE TYPES
TO·202 (Package 35)

250

200

10V

V
V

7
50

~

UNITS

pF

.....
.....

Process 77

t/)
t/)

Q)
to)

...o

0.

Typical Normalized Pulsed
Current Gain vs Collector

Base-Emitter "ON u
Voltage vs Collector

Current

Current
~

os.

1.2

Base·Emitter
Saturation Voltage
vs Collector Current

.-,....,..,rrm",,-.-..,,,,,,,"",=mrm

~

~

:?
a::

i

~~w~~I~I1t1

0.8

0.6 ~~"!!5·:l>C""1"FFfIIHt-::J;.ofTHtffl

i

F

~

04

H-tttttllboH'::""C'

~~
§!

Tc"'-4D°£'

T~,,12~W~~~ffI-~~

i,

+Hi1ltll--t+fttttII

,

I I 1I-lttll-IIIII--H+tttllt-t+!:IIHII

1

!~

IJ.B
0.6

~ 0.'

01

I
.!II1l
~ " 10illll
I!m-+-t+fHIII-t-ttttHtI

1.2

~
=

o

OA

f-1"Fftttlil-'l-H-tttttt-t+!

O'-'..l..1.wJJ'-L...U..lJJ1"-J...I.WWI
100

10

1k

•

Ie - COLLECTOR CURRENT (mAl

Collector·Emitter
-Saturation Voltage
vs Collector Current

~ =:

0,8

1-"H1rt1tllt-t+HtlIIII-HHJ+Hl

!i ~
g~

0.1

1-1-H-tttttt-t+HtlIIII-t+ttttHl

OA

HH-Ititt\HT~c"~:::~

!~

8~
I

II:

ia

~

i

1

.e ..

".,,"."c,.","'OV:mr"TrrrTTTlr-rTTTlTTD

:;

5
~

1-'1-H-tttttt-l-HbI'IIIfI--'HHJ+Hl

150 1-'1-H-tttttt-hI'I~tt-t\l-ttttHl

~

100

~

.,.,

1k

Ie - COllECTOR CURRENT (mAl

Ie - COllECTOR CURRENT (mA)

~~1-~+1~++1-~1

DO

10

Maximum Power Dissipation
vs Ambient Temperature

(TO·202)

10

10
E1BD;!s

1m.

~

DC

~,..-

1'\

=

!

'0

T AITAS REMOVED)

0.1

,

.E

0.01

\~t~IT1iTAB) l:'>, 1\

THIS LIMIT
DETERMINED
8VCEO

10

o

100

VCE - COLLECTOR-EMITTER VOLTAGE (VI

o

25

50

75

100

125

TA -AM8IENTTEMPERATURE tOC}

6-14 -

20.

3D

Vcs - COLLECTOR-BASE VOLTAGE (V)

Safe Operating Area
T0-202

i

HHHH~~~~~~

~,
J

"

rrrrrrrrrrrr,..,..,.,

20

~

50 1-~-tttttt-I-H~It-HH*Hl

100

1k

3D ~~1-~+1~++1-~1

I

1-1-H-HllI!£-I-H~lI-H\HIHl

10

100

Collector·Base Capacitance
vs Collector-Base Voltage

:!i

~~~t;ttl~II~IIII11~fIT~

lC
~

10

Ic - COLLECTOR CURRENT (rnA)

-

S

oC

100

250

1"0

Dll-I-H-tttttt-t+~ffi&""'-P~~im
10

1k

;§

Tc"~~OC

1

100

Gain Bandwidth
Product vs Collector
Current

~ = lo1ttll-t-tttttltH-tttttffl

a::

10

Ie - COLLECTOR CURRENT (mAl

150

."

~

Process 78 PNP Medium Power

ao
CD

en
en

'·"'i

.....

DESCRIPTION

Q)

(0.7871

I

a
PARAMETER

Process 78 is a double diffused silicon epitaxial
planar device complement to Process 38.

l
J

APPLICATION
This device was designed for general purpose
medium power amplifier and switching circuits
that require collector currents to 1 A.

0.031
(0.1871

TEST CONDITIONS

MIN

TYP

MAX

UNITS

BV CEO

Ic=10mA

45

80

V

BV CBO

Ic = lOOILA

75

110

V

BV EBO

IE = lOOILA

5

ICBO

V CB = BV CEO

50

500

nA

lEBO

V EB = 5V

0.1

100

IlA

hFE

Ic = 100 rnA, VCE = lV

VCEISAT)

Ic = 500 rnA, 'B = 50 rnA

0.2

0.5

V

VBEISAT)

Ic = 500 rnA, Ie = 50 rnA

0.95

1.4

V

50

,

AVAILABLE DEVICE TYPES
TO·126 (Package 38)

NSDU55
NSD6180
NSD6181

BD138

MHz
15

Vce = 10V

TO·202 (Package 35)

250

50

Ic = 100 rnA, VCE = 10V

fT
COBO

V

7

TO·202 (Package 36)
D43C7
D43C8
D43C9
NSE171
92 PLUS (Package 90)
92PE77B
BD372B
BD372C
92 PLUS (Package 91)
92PU55
BD370B
BD370C

6·15

pF

co
.....

Process 78

.~
CI)
(J

e

a..

Typical Normalized Pulsed

Base-Emitter ··ON"

Current Gain vs Collector

Voltage vs Collector

Current

Current
Q

10

~

~

0.'

~

0.'
0.1

~

j:~

-"

0.'

~ 0.'

100

10

Ik

~,

0.'

j

0

I~
,

VeE "'lV(12S"CI

~

10

I

Ie - COLLECTOR CURRENT (rnA)

"1111::::

~- 0.8
:;2:.

~

l'

.!£ = 1~'HII

~

.. 0.8

~
~

zQ

~

ffi

i:

vs Collector Current

12

0

"

I

Base-Em itter .
Saturation Voltage

100

0.6

Tc "-4O"C

Tmll

f':~

0.' i-"~~·C

.,

J

111111
111111

o

It

Ie - COllECTOR CURRENT (mA)

Collector-Emitter
Saturation Voltage

Gain Bandwidth

vs Collector Current

Current

I
§

0.' 1-t+1ttttft-t+I-HtlIlt--t+tt1t1H

~

250

100

Ik

Ie - COLLECTOR CURRENT (mAl

Product 05 Collector

~ = 10HHt-t+tlHtltf-t-t+ftttfI
0.8 I-"Hllttttft-t+I-Htltt-t+tt1t1H

10

I

Collector-Base Capacitance
os Collector-E!ase Voltage

VcE "lOV

200

l-/-tiftHtll-t+Httljb..j.;!-ttftlH

150

I-Hilttttft-H'ftttltt-t+$1t\

1100 I-HiItttt~t+Itttttt-t+HftNl
:l

z

:

,

10

5DI-~lttttft-t+Itttttt-t+HftIt\

It

100

Ie - COLLECTOR CURRENT (mAl

Ie - COllECTOR CURRENT (mA)

Vea - COLLECTOR·BASE VOLTAGE (VI

..
Safe Operating Area
TO-202

Maximum Power Dissipation

vs Ambient Temperature.

10

i!
~

10

E

i

f==

B
~TAB

DC

~

i'l

=

~,
-"

TAfTAB REMOVED.

0.1

I-0.01
I

F\illtJ"H"" ~ [',

I

. BY ~v,~o
10

o

100

o

25

50

75

100

125

TA - AMBIENT TEMPERATURE (OC)

VeE - COLLECTOR·EMITTER VOLTAGE (VI

6-16

150

Process 79 PNP Medium Power
DESCRIPTION
1_~D'D31
_ _ 'I
(0.1811

1

Process 79 is a double diffused silicon epitaxial
planar device complement to Process 39.

APPLICATION
This device was designed for general purpose
medium power amplifier and switching circuits
that require· collector currents to 1A.

I

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

BV CEO

Ic=10mA

80

110

V

BV CBO

Ic = 100JlA

110

140

V

BV EBO

IE = 100 JlA

5

50

500

nA

0.1

100

J1A

ICBO

VCB ~ BVCEO

lEBO

V EB = 5V

V

7

25

150

hFE

Ic = 100 mA, VCE = lV

VCE(SAT)

Ic = 500 mA, IB = 50mA

0.2

0.5

0.9

1.4

VSE(SAT)

Ic = 500 mA, Is = 50 mA

fT

Ic = 100 mA, VCE = 10V

Coso

Vcs = 10V

50

120

TO-202 (Package 35)
NSD204
NSD205
NSD206
NSDU56
NSDU57
92 PLUS (Package 90)
92PE77C
BD372D
92 PLUS (Package 91)
92PU56
92PU57
BD37o.D
TO-126 (Package 38)
BD14o.
6-17

'v
MHz

15

AVAILABLE DEVICE TYPES

V

pF

0)

.....

Process 79

In

(/)

CD

(.)

o...

Q.

Typical Normalized Pulsed
Current Gain vs Collector
~

10

!'l

~

D.•

=

0.6

.~

~

05

~,
§

ii:

~

1

z

D.'
0.1
10

~

1k

100

~ ~, :)

1111111

~

D.'

T'il',l~;c
1IIIIIl

:l,

i

0.2

~

0
1

10

100

1111111
1111111

o

1k

1

10

100

1k

Ie - COLLECTOR CURRENT (mAl

Saturation Voltage

Gain Bandwidth
Product vs Collector

Collector-Base Capacitance

vs Collector Current

CUrrent

vs Collector-Ba.. Voltage

~

~ = 1DfItlIHr+ttlttlf-t+1+llI1Il

40 rrTT"rrTT"rrTT"

250 r::-...-r;""'''TTnnTTrT1"TTTrm
VcE ",'0V

y

~

z
200

1-t+1+llIll-++ttttttt-+t-tttHtl

~

0.6

1-t+1+llIll-++ttttttt-+t-tttHtl

~ 150

I-l-+ftHjll-+tttHtIf-+l-ftt1tll

13

0.4

l-t+ftHjll-+ttlitTiiI'-"2"'~·:iC-ftt1tM

~

1-t+I+llIJI---hi'ffIlttt--H'I<+Ht1

0.2

T" 125~C·-"('f.-rttH'Iltlf-III+
1">-,,!,/I/1tlI

~>

T; ~I~~~c

Ie - COLLECTOR CURRENT (rnA)

~ so., l-"H-tltHlI-+tttHtIf-+l-ftt1tll
i-;;;

•
Jl~

0.'

~ ~ '0:::::

~~ 0.'

D.•

Collector-Emitter

~~
Go
~~
, ::!

~,,~

.

Ie - COLLECTOR CURRENT (mAl

a:

1.2

~~

0

I

z

"~

~

"
,

vs Collector Current

1.2

~

i<

13

Base-Emitter

Saturation Voltage

Current

Current
0

Base-Emitter "ON"

Voltage vs Collector

~

I-I-H++llIHrl~s~:~Oj~~'~/"'I"""/
";"'"l!<

""'"
""",

10

~
~

,.
...

100

,

~

100

i
::;

5ol-t+~JI--++ttttttt--H-tttM

10

I-+++rl-rt-Ri"!'-H+~-I

o L..L.J...J.-,-u....ww....L.J...J...J...J...J
o
10
20
30

J

Vea - COllECTOR·BASE VOLTAGE (V)

Ie - COLLECTOR CURRENT (rnA)

Maximum Power Dissipation
. vs Ambient Temparature
(TO-2021

Safe Operating Area
TO-202
10

10

=-

100,,:
~TAB-

~
=

1'\

;;

~i'l

~+I~t+-rrt1-rt~~

10 ~~~t+rl-rt4-t++t~

,

1k

Ie - COLLECTOR CURRENT (mAl

~:;;

30

TACTAB REMOVEDI

0.1

,

"" 0.01

f--'
1

I

.• v ~v'\O
10

,

F\m!.J,,,,,.,, ~
o

100

o

25

50

75

100

125

TAr, - AMBIENT TEMPERATURE

Vc£ - COLLECTOR-EMITTER VOL lAGE IV)

6-18

rei

150

Process 2C NPN Epitaxial Power

...o"tJ
(')

CD

en
en
DESCRIPTION

'///

;,

N

Process 2C is a double epitaxial silicon mesa
with diffused emitter.

/ / / / / / / //

~

/

)}~

/

llV

/

.»f/

/

t/

/

o

APPLICATION
This device was designed for general purpose
power amplifier and switching circuits where a
large safe operating area is required.

0.058
(1.473)

V

-:;/////J////L

PARAMETER

TEST CONDITIONS

MIN

TVP

MAX

UNITS'

BV CEO

Ic

=

100 mA, (Note 1)

30

100

V

BV CBO

Ic

=

1 mA

60

200

V

BV EBO

IE

=

lmA

5

ICED

VCE

p.A

ICBO

Vce

lEBO

VEe

hFE

Ic

=

1.0A, VCE

=

VCE(SATJ

Ic

=

2.0A, IB

0.3A, (Nole 1)

VBE(ONl

Ic

=

2.0A, VCE

SOA

VCE

= 33.3V, 1=

1 sec

0.9

IT

Ic

0.5A, VCE

2V

4

Id

Ic =
Vcc
Ic =
Vcc

=

V

8

BV CEO - 10V

10

300

=

BV CEO

0.1

10

=

5V

10

100

=

=

IV, (Nole 1)

=

200

15

2.0V, (Nole 1)

=

IlA
. p.A

0.5

V

1.0

V
A
MHz

lA, IBI
40V
lA, IBI
= 40V

=

IBZ

= O.IA,

0.05

p.s

=

'B2

=

O.IA,

0.25

p.s

I.

Ic = lA, IBI
Vcc = 40V

=

IB2

=

O.IA,

0.75

p.s

If

Ic = lA, IBI
Vcc = 40V

=

IB2

=

O.IA,

0.25

IlS

I,

POfMAX)

81,

=

TO·220
TO·126
TO·202

40
30
12.5

TO·220
TO·126
TO·202

3.125
4.167
10.0

W
W
W
°C/W
°C/W
°C/W

Note 1: Pulsed measurement = 300p.s pulse width.

AVAILABLE DEVICE TYPES
TO-220 (Package 37)
DC44Cl
DC44C2
DC44C4
DC44C5
DC44C7
DC44C8
DC44Cl0

NSP520
NSP521
NSP4921
NSP4922
NSP4923
TIP29
TIP29A

TO-126 (Package 38)
TIP29B
TIP29C
TIP31
TIP31A
TIP31B
TIP31C
TIP61

TlP61A
TIP61B
TIP61C

2N4921
2N4922
2N4923
MJE520
MJE521

DII
6-19

U

<"I

Process 2C

(/)
(/)

Q)
(,)

Bass.Emitter nON"
Voltage vs Collector

Typical Normalized Pulsed
Current Gain VI Collector
Current

0
0..

"10
Q

~
0

!::!

20

1.4

~

p

D.'

D.'

~

.,.~
i,

OA

~,

0.'

~

~

0.1
0.01

0.1

10

::

Tc

i~

r

.~

10

0.4

Tc=-40°CI

:

~

!

• 4

~,

:

002

10

0.1
Ie - COLLECTOR CURRENT tAMPS)

I

100,,5

r- I

~
S

,

I II illii"·
10

.""'-.:"-

~

,

10

g

zo

10

1...,.

li!
~

-

~

1m"

,

z

'"

!

-LIMIT DETERMINED:!:;.

0.2

,

-I III illii"·f
1

5

10

20

0.2
0.1

50

-11M

"'_

-I Illillll
10

100

VCE - COLLECTOR EMITTER VOLTAGE (V)

Te~perature

20

Vcc =35V

DUTY t::YCLE = 1.0%
PW"5-IDlJs .
GENERATOR = HP1900A

100

150

Tc - CASE TEMPERATURE t"C)

6-20

50

100

VCE - COLLECTOR EMITTER VOLTAGE (V)

Switching Circuit

l:~Il

I'~~".':

D.'

Maximum Power
Dissipation vs Case

50

30

Safe Operating Area
TO-202

lm;~ -

0.1
50100

VCE - COLLECTOR EMITTER VOLTAGE IV)

o

Vca '- COLLECTOR·BASE VOLTAGE (V)

D.'

.E
20

o

.J

DC

~

f-- LIMIT DETERMINED
0.1

2

,

10

i

1m.
D.'

.E

1

10

Del'\ _

02

0.1

.~

'm.

\

50

Safe Operating Area
TO-126

10

li!
~

100

Ie - COLLECTOR CURRENT (AMPS)

Safe Operating Area
TO-220

Tc"25°C

~

:i,
001

,

'"z
g 150

z

0.2

10

200

VCE"'ZV

<;

iii

Te"2S"C

111111
111111
0.1

Collector-Base Capacitance
vs Collector-Base Voltage .

:

Tc=12S"C

0.01

Ie - COLLECTOR CURRENT (AMPS)

I

0.'

c "11~~:17

IIII
IIII

o

10

Current

Collector Current

0

!

~

::
0.1

Tc~OC

~n

0.4

Gain Bandwidth
Product vs Collector

!£=10
I.

~z

8~
,:;

,

Ie - COLLECTOR CURRENT (AMPS)

lA

~2:
~~
a:.:
~g D.'

i~

0

Collector~Emitter

1.'

~~' 0.'

Tc=125°C

1111111

0.01

IC =ID
I.

1.2

!>
~
r:~ D.'

!I~~~oc

01

Saturation Voltage

~

~

~c

0.'

Ie - COLLECTOR CURRENT (AMPS)

VI

1.4

z

0

VcE"IV
1.'

"=

I

Base-Emitter Saturation
Voltage vs Collector
Current

Current

Ic=lA
IBl1= 100mA
laz"'100mA

Process 2E NPN Epitaxial Power

"o...
(')

CD

en
en
DESCRIPTION

N

Process 2E is a double epitaxial silicon mesa with
diffused emitter.

w/////////////~

f/
~
V

~

~

APPLICATION

V

~~

This device was designed for general purpose
power amplifier and switching circuits where a
large safe operation area is required.

'.01'

'~J'I.77')

~/////////////&
PARAMETER

MIN

TYP

MAX

BV CEO

Ie = 100 rnA, (Note 1)

30

60

100

BV eBo

Ie = 1 rnA

SO

BV EBO

IE

TEST CONDITIONS

= lmA

S

200
8

UNITS
V
V
V

ICED

VCE = BV eEo

SO

300

/iA

ICBO

V CB = BV CEO

10

100

I'A

lEBO

V EB = SV

1000

/iA

hFE

Ic = I.SA, VCE = 2.0V, (Note 1)

SO

= 0.6A, (Note

VCE(SAT)

Ic = 4.0A, IB

VBE{ON)

Ic =4.0A, VCE = 2.0V, (Note 1)

SOA

VeE = 33.3V, t = 1 sec

IT

Ie

= 0.5A. VCE

20

1)

0.6 .

V

1.3

V

1.2

= 2V, f = 1 MHz

A

4

Ic"= 1.0A,I B, =0.IA,I B2 =O.IA,

td

200

MHz
0.10

/is

0.2S

/is

0.3S

/is

0.23

/is

Vec = 30V
t,

-

Ic = 1.0A,I B, =0.IA,I B2 =O.IA,
Vcc = 30V
Ic = LOA, I B, = O.IA, 182 = 0.1A.

t,

Vcc

= 30V

Ic = 1.0A,I B, =O.IA, 182 =O.IA,
= 30V

t,

Vcc
PO(MAXI

°jC

TO·220

50

w

TO·126

40

W

TO·202

15

TO·220

3.S

TO·126

3.125

°C/W

TO·202

8.33

°C/W

Note 1: Pulsed measurement = 300l's pulse width

AVAILABLE DEVICE TYPES
TO-220 (Package 371
2N5293
2N5294
2N5295
2N5296
2N5297
2N5298
2N6121

2N6122
2N6123
2N6129
2N6130
2N6131
2N6288
2N6289

W
°C/W

TO-126 (Package 381
2N6290
2N6291
2N6292
2N6293
D44C3
D44C6
D44C9

D44Cll NSP5192
D44C12 NSP5193
.NSP41
NSP41A
NSP41B
NSP41C
NSP5190

2N5190
2N5191
2N5192

6-21

m

W
N

Process 2E

en
en
Q)
0

...0

Typical Normalized Pulsed
Current Gain VI Collector
Current

Q.

~
~

:::::;

Base·Emitter "ON"
Voltage vs Collector
Current

;;

1A

~

12

!<

~

I
~J

~

'.S

1\1

i,

,.,
.,,.,

,,

,.1

0.8

,.,
,..
02

~
:}

S

Ie - COLLECTOR CURRENT (AMPSI

Coliector·Emitter
Saturation Voltage
VI Collector Current
z

~

S
~

~~
!~

~~
~>
8,

,.,

i

"

~

~

~

a,

.:

,.1

,.,

" t--

10lJ,us

i
.

5ms

'.S
B
=::
8,

-"

,., t-t-,., ,

"

'C

I
,

1lllIt'i"rffi
20

"-

,

,~-LJ-~-LJ-~-L~

50

-"

,.1

t--

i!

"

100/.15

'm.

DC

5

I..

LIMIT

j,

oHhMINED

-llllllliYBVn
10

100

VCE - CDLLECTDR·EMITTER VOLTAGE (V)

"

10D~

'.S

e-

30

Safe Operating Area
TO·202

'm'7~
Sm.
Ili"
'.2

20

"

Yea - COllECTOR·BASE VOLTAGE (V)

DC

I

LIMIT o'ElERMINED

10

i!
5

II~ ms

il

,,

0.01

Safe Operating Area
TO·126

DC

H\I-+H++H+-H

~ 50~-t4-t4=F~Ft9F~
8,

Ie - COllECTOR CURRENT (AMPS)

Safe Operating Area
T0-220

"

100

'"

~

Tc=

Tc " 5°C

~ '~H-++-H++-H+-H

Ie - COLLECTOR CURRENT/AMPS)

5

~

g:

0.01

i!

~'rr,,-rTO-rrr"I'

VeE uy~

I

I,

i

J

l!

!£."ID

,..
,..
,..
,.,

Typical Collector
Capacitance vs Collector·
Base Voltage

Gain Bandwidth
Product vs Collector
CUrrent

'A

0

,.,

0.01

Ie - COLLECTOR CURRENT lAMPS)

ZD

Sm.

t--

'.2 t--

-"
50

I'\.

,.S

,.,

UMIT DETERMIN'r

1llllili'""r

tOO

Veil - COLLECTOR-EMITTER VOLTAGE (V)

10

11

20

Maximum Power

Dissipation
~
~

.
50

3D

Ii!

I
~

j

Case

Switching Circuit
Vcc" 3SV

TO·220

I.. " m
;

YS

Temperature

T~.~"

N.

S• CIW

'::11.

ji~i1Z5"CM~

20

TO·202

10

-ttt r·

DUTY CYCLE = '.0%

PW=5-UJ,us
GENERATOR" HPI9DOA

33 'c/w

"

'DO

'50

TC - CASE TEMPERATURE ("C)

6·22

50

1110

VeE - COLlECTOR·EMITIER VOLTAGE (V)

Ic=IA
ISI =tDOmA
IB2=IDOmA

Process 2J NPN Power Darlington

...o"'0
n

(1)

en
en

DESCRIPTION

N

Process 2J is a double epitaxial silicon mesa device.
Complement to Process 3J.

APPLICATION
This device was designed for use in driver and
output stages of complementary audio amplifier
circuits. It is also well suited for solenoid driver
applications.
0.066
(1.6761

PARAMETER
BV CEO
BVceo
BV Eeo
' CEO
'ceo

TEST CONDITIONS

MI",

TYP

. MAX

' c ;100mA

30

100

Ic; 100llA

50

120

'E; 2 mA

5

UNITS
V
V
V

VCE ; 1/2 BV CEO

0.5

mA

Vce; BV CEO

200

IlA

2.0

mA

'Eeo

VEe; 5V

hFE

'c ; 2A, VCE ; 3V

500

15,000

VCE(SATI

Ic ; 5A, Ie ; 2.0 mA

3.0

V

VeE(ONI

Ic ; 5A, VCE ; 3V

2.5

V

Coeo

Vce; 10V

30

IhFEI

' c ;lA,V cE ;3V,f;1 MHz

9

tON

Ic; 6A, VCE ; 30V, (Figure 1)

tOFF

Ic; 6A, VCE ; 30V, (Figure 1)

1.25
2.75

AVAILABLE DEVICE TYPES
TO-126 (Package 38) . TO-220 (Package 37)
2N6037
2N6038
2N6039
MJE800
MJE801
MJE802
MJE803

2N6386
TIP110
TIP111
TIP112
NSP2100
NSP2101
NSP2102
NSP2103

6-23

pF

lIS

lIS

c..

..,
N

Process 2J

U)
U)

~
(,)

...Q.o

Typical Normalized Pulsed
Current Gain V$ Collector

Base·Emitter "ON"
Voltage vs Collector
Current

Current
c

~
f
c

':l

~

!1
5

~

1

1D

,

, r-t
•

2.'

~

2.'

s:

Tc =25'C

Tc=I2Soc

a
~

2

P

0.5

~

0'

:,

D••

~~ i'i"lniiC

"'"

VeE =3V

•

0.1

~

;

1D

'.6

T:~.l5·lc

D.'

•

D.'

;

VcE "'3V

=

;

~

/

~

.!'

D.5 ' - -.....
I..J.
I...LU
1J..W.--L...J....1..J.U.UJ

"

Ie - COLLECTOR CURRENT(AMPS)

•

D.'

ID

D;;-"I'

Ii!

5

m

,

..

0>-

~
=

LIMIT DETERMINED

1111111

BiBliGI

,.5

~

D>

a•

.DO
1D
•
VeE - COLLECTOR·EMITTER VOLTAGE (VI

DC

•

g
.!'

LIMIT DETERMINED

I-

111111

•

to

Switching Times vs
Collector Current

1D~_
Ic .. Z50

:;

~01"

.:::

.1'1

";;

0
2

T~42r

50

75

i
100

125

6

"

1r-+-++++HtI-~--l::±±:I ,
'i\.

•

0.5

D> I-+i+ffi~r-=-I-W..
,,*"
0.1 L.....-1.-.L..L.J..LU.ll-...L...J...J...-nL.U.J..U
0.1 0.2
O.S
t
z
5
10

150

Te - CASE TEMPERATURE rCI

Ie - COLLECTOR CURRENT (AMPS)

Vee =J!iV

r----,

RB ""910

,....,.--

-~-~~"~~R~"'~"+':~~

1

L ____ .J

GENERATOR = HP1900A
DUTV CYCLE = 1%
PULSE WIDTH" 5-10"s

,%00>""

le=6A
IB1.1B2=4mA

nVf'il
100

VeE - COllECTOR-EMITTEIl VOLTAGE IV)

Maximum Power
Dissipation vs Case
Temperature

25

1D

Safe Operating A....

!

,

...

"

11

T0-220

5

I•

a.

T~.M
j;.i'

Ie :- COLLECTOR CURRENT (AMPS)

1D

Ii!
~

,"

1.6

Safe Operating Area
TO·126

~ = 2511tt1tt1l--I-t-+.l-H1fH

C

C;;.;;

D.

1D

'pl.ZS·C

T!J.·h

i ..,

/

,.....

"

Ie - COLLECTOR CURRENT (AMPS)

"'~""TTlTIr---'rr"TTmn

Tc'-4O""C

~~
!g
,

Tc "-40'C

12

\III
\III

~"2&D

,.

S , Htt
~~

T~~2&'C

2

Coliector·Emitter
Saturation Voltage
vs Collector Current

•

i

III

I-

'.B

is

III

Ie - COLLECTOR CURRENT (AMPS)

'.5

Ba.... Emitter Saturation
Voltage vs Collector
-Current

VEE "5V

FIGURE 1

6-24

\

,

Process 3C PNP Epitaxial Power

...o"C
n

(I)
t/)
t/)

DESCRIPTION

CtJ

Process 3C is a double epitaxial silicon mesa with
diffused emitter.

APPLICATION
This device was designed for general purpose
power amplifier and switching circuits where a
large safe operating area is required.

0.058
f1.473}

PARAMETER

,

TEST CONDITIONS

• MIN

TVP

MAX

UNITS

BV CEO

Ic = 100 rnA, (Note 1)

30

100

V

BV CBO

Ic = 1 'rnA

50

200

V

BV ESO

IE = lrnA

5

6.5

V

ICED

VCE = BV cEO - 10V

10

300

Icso

Vcs = BVCEO

0.1

10

I1A
I1A

IESO

VES = 5V

10

100

I1A

hFE

Ic = 1.0A, VCE = lV, (Note 1)

200

15

VCEISATi

Ic = 2.0A, Is = 0.3A, (Note 1)

0.5

V

VSEION)

Ic = 2.0A, VCE = 2.0V, (Note 1)

1.0

V

SOA

VCE = 33.3V, t = 1 sec

0.9

IT

Ic = 0.5A, VCE = 2V

4

0.03

I1S

0.20

I1s

Ie = lA, IS1 = IS2 =.O.lA,
Vee = 40V

0.26

I1S

Ie = lA, IS1 = IS2 = O.lA,

0.20

I1S

Ic' = lA, IS1 = IS2 = O.lA,

td

A
MHz

Vcc = 40V
t,

Ic = lA, IS1 = IS2 = O.lA,
Vce = 40V

t,
t,

-

Vce = 40V

PDIMAX)

°jC

TO·220

40

TO·126
TO·202

30
12.5

TO·220

3.1,25
4.167

°C/W

10.0

°C/W

TO'126
TO·202
Note 1: Pulsed measurement

=

300p.s pulse width.

AVAILABLE DEVICE TYPES
TO-220 (Package 37)
D45Cl
D45C2
D45C4
D45C5

D45C7
D45C8
D45Cl0
D45Cll

TO-126 (Package 38)
NSP370
NSP4918
NSP4919
NSP4920

TIP30
TIP30A
TIP30B
TIP30C

TlP32
TlP32A
TIP32B
TlP32C

TIP62
TIP62A
TIP62B
TIP62C

2N4918
2N4919
2N4920
MJE370-

6-25

W
W
W
°C/W

n

o
M

Process 3C

en
en

Q)
(J

e

Typical Normalized Pulsed
Current Gain vs Collector
Current

Q.

0.,._
02

1-t+1+HI1Il-t+Hl!1If---+4+++l1ll

0.1 l-LLUllJILLLUUw....Lll.WllI
0.01
0.1

BaseaEmitter
Saturation Voltage
VI Collector Current

BaseaEmitter "ONn
Voltage vs Collector
Current
o

1.2

~
g
k
P

0.8

~

0.6

~
~

0.2

,

FTc"'25~C

D.'

o

3 ,

0.1

0.01

Ie - COLLECTOR CURRENT (AMPS)

Collector-Emitter
Saturation Voltage
vs Collector Current

Typical Collector Capacitance
vs Collector-Ba.. Voltage

VI

Collector Current
12 ~~mm~~~m-~Tmm

I" "~~~~++~~+++++llll
~

::B

t

~
10DJ,lS

lms::

,
j

-I I II illiic

0.1

1.2

Ie - COLLECTOR CURRENT (A)

,"w

~~

~1lW

Base-Emitter uON u
Voltage vs Collector

1.6

, .'"
~g;

eo

= 10

1.4

~>

0.4
0.2

Ie
I.

1.6

",s
~ii
:2;::
"'~
w"
:;\'"
,S!
_I-

Ie - COLLECTOR CURRENT (A)

a:

§I
+25°C

0.6

0.1
0.01

Current

e-

o.B

g;~

~c:c

~'"
::!
B

-

~~

W

CI

Ie "" I= 10
I.
l-

'"
~2:

c

"''''w

Base~Emitter Saturation
Voltage vs Collector

Collector-Emitter
Saturation Voltage
ys Collector Current

Current Gain vs Collector
Current

150

100

Process SA Epitaxial Power

..."'Co

(')
(1)
(J)
(J)

(J1

l>
0.100

'

1Z.54OJ

DESCRIPTION

z

Process 5A is a double epitaxial silicon PNP mesa
device with a diffused emitter.

APPLICATION
This device was. designed for general purpose
power amplifier and switching circuits where a
large safe operating area is required.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

BV CEO

Ie = 200 mA, (Note 1)

40

100

V

BV CBO

Ie = 1 mA

GO

150

V

BV EBO

IE = 0.5 mA

5

ICEO

VeE = BV CEO -10V

10

200

J.l.A

leBo

Ves = BV CEO + 20V

1

20

J.l.A

IESO.

VES = 5V

1

500

I1A

hFE

Ic = 2.5 A, VCE = 2V

VCE(SAT)

Ie = 4 A, Is = 0.4 A

7

200

20

VSE(ON)

Ie = 5 A, VeE = 2V

SOA

Ic = 3 A, t = 1 sec

30

ft

Ie = 0.5 A, VeE = 5V, f= 1 MHz

2

V

\

0.5

0.6

1.2

1.3

V
V
V

Ie = 5 A, IS1 = IB2 = 0.5 A
Vee = 40V

0.03

I1S

tr

Ic = 5 A,Is1 = IS2 =0.5A,
Vce = 40V

0.27

I1S

t,

Ie = 5 A, IS1 = IS2 = 0.5 A,
Vec =: 40V

0.3

I1S

Ic = 5 A, ISl = IS2 = 0.5 A,
Vcc = 40V

0.37

I1S

TO·220

60
2.08

TO·220
Note 1: Pulsed measurement = 300 liS pulse width.

AVAILABLE DEVICE TYPES
NSP5974
NSP5975
NSP5976
NSP2010
NSP2011
NSP105

NSP2955
2N6489
2N6490
2N6491
D45Hl
D45H2

D45H4
D45H5
D45H7
D45H8
D45Hl0
D45Hll
6·33

°C/W

12!

::4

Collector-Emitter
Saturation Voltage

.!£. = 10

1.2

18

+125'C

w>

O.B
0.6

-'"
."
;\!;;:

0.4

+25'C

~VJ

~~

1.2

...

O.B

we
w>

~z

0.2

1.6

:ilz

,2

-l-

,..;.:

0.2

~'"

0.1

0.4

Ie - COLLECTOR CURRENT (A)

0.1

10

0.01

~

25

11111

0.01

10

'-40'C

~tff, IIii1
o

~~
>;Jj

'-40'C

o

0.1
0.01

f-IBIIIII
IIIII
IIIII

I:~

~!:
Ul-

,,,

I-!s. 10

ffi~

'F
,

0.1

10

Ie - COLLECTOR CURRENT (A)

Ie - COLLECTOR CURRENT (A)

Base-Emitter "ON n

'"

;~

::Ew

..

~~
~I~
~e

,>

vs Collector Current

Junction Capacitance
vs Reverse Bias Voltage
JOO

-V~.!5~

~

~

250

~

1.6

z

........

1.2
'-40'C

O.B

I"""
0.4 F'

o
0.01

+~

0.1

~

150

z

10

o

10

Ie - COLLECTOR CURRENT (A)

"

50

=l

,

CaBo

C'B

100

t;

lWt1 25'C

"""'

200

i!!i

,."

lllIl-

g

III
III

'i-

w

U

i

J

G'ain Bandwidth Product

V~EI=litl

1.,

P

Voltage," Collector
Current

10

1

Ie - COLLECTOR CURRENT (A)

Maximum Power'

Dissipation vs Case
Temperature

Safe Operating Area TO-220
10

III

10ms

5

DUm

ffi
'"~'"

DC

TO·220

1'\

r--

a:
e

~
8

r-.
,

2.OlI'C/w

LIMIT DETERMINE

,

11111

.!'

0.1

11111
10

jY jVm

I'

II
100

50

VeE - COLLECTOR·EMITTER VOLTAGE (V)

100

Te - CASE TEMPERATURE ('C)

6-34

20

V. - REVERSE BIAS VOLTAGE (V)

150

100
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