1978_Motorola_Power_Device_Data 1978 Motorola Power Device Data
User Manual: 1978_Motorola_Power_Device_Data
Open the PDF directly: View PDF 
.
Page Count: 1022
| Download | |
| Open PDF In Browser | View PDF |
DEVICE
DATA
"
I
~
.
Pioneer
.~ PIONEER-STANDARD ElECTRONICS, INC.
6408 CASTL.EPLACE DR/INDIANAPOLIS, IN 46250 (317) 849·7300
TOLL FREE • IN 1·800·382-5503 •
KY 1·800-428·9128
POWER
TRANSISTORS
& THYRISTORS
.II~~
__.
~
Alphanumeric Index
Power Transistor Selector Guide
Power Transistor Cross Reference
..
II
II
Power Transistor Data Sheets
II
Thyristor Selector Guide
II
Thyristor Cross Reference
II
Thyristor Data Sheets
Leadforms, Hardware,
and Mounting Techniques
II
II
Rectifier and Zener Diode
Selector Guide
II
Supplementary Literature
Em
.-'
MOTOROLA
POWER DEVICE DATA
Prepared by
Technical Information Center
This book presents technical data for Motorola's broad line of silicon power
transistors, thyristors, and triggers. Complete specifications for: preferred
devices are provided in the form of data sheets. In addition, selection guides
provide a quick comparison of characteristics to simplify the task of choosing
the best device for a circuit.
The information in this book has been carefully checked and is believed to
be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
devices any license under the patent rights of any manufacturer.
First Edition
©MOTOROLA INC., 1978
Printed in U.S.A.
"All Rights Reserved"
MOTOROLA
POWER DEVIC---IN BRIEF
SILICON POWER TRANSISTORS
Wide Range of Transistor
Specifications
• Routinely Used Processes and ,
Their Specific Attributes
Motorola offers more than 600 stan, dard (off the shelf) power transistors to
cover the widest range of applications at
the lowest cost.
Current Range - 0.5 to 70 Amperes
Voltage Range - 25 to 1500 Volts
Power Dissipation Range - 1 to 300
Watts
Process
Feature
Planar
Good frequency response (fT
Double and ,25 MHz) combined with BVCEO
Triple
of 200 V, which can be extended
Diffuaed
to 450 V by use of a "field
plate" diffusion. Available in
both NPN and PNP types, for
fast switches or high-frequency
amplifiers where de SOA is of
little concern.,
Mesa
A high-voltage process capable
Doubteand of attaining 2000 V breakdowns,
Triple
wifh low to medium gain, medium speed and ruggedness, at
Diffused
low cost. NPN process only.
Used in auto ignition, Switch·
mode regulators and TV hori·
zontal outputs:
.
A ~redjctable epitaxial base
EplBase
grown on thick collector silicon
produces a workhorse transistor with 4.10 MHz fT, 40-150 V
BVCEO, and 70 A current capability in bott.l.PNP and NPN. Applications ,~or the economical
standards include audio
amplifiers. inductive power
switches'" and low-frequency
voltage' regulators and
Darlingtons, Too
Darlington transistors represent the
integrated circuits of the power field. Consisting of two transistors, two resistors,
and (up to) two diodes, they achieve gain
figures up to 20,000 in a single package.
Rapid line expansion, and the resulting
widespread implemer;ltation make
Motorola Darlingtons highly cost effective
in a fast-growing number of applications.
Complete Selection of
Popular Packages
In metal and plastic, Motorola offers a
wide range of packages to match thermal, electrical and cost requirements ..
Chips, Chips, Chips!
Designing a hybrid? Motorola's wide
range of power transistors is available ...
UNENCAPSULATED: Check with your
Motorola sales representative for price
and delivery quotations.
convert~rs.
PowerBas8
Specials Unlimited
Need a unique transistor with specifications not available off-the-shelf?
, Chances are Motorola can produce it
quickly and inexpensively. Routine use of
four major power processes·. and more
than two decades of experience in the
pioneering of new structures and
geometries provide the insight and
capability to meet any required specification within the limits of state-of-the-art
technology.
ii
Using a thick, epitaxial base
region. ·wi.th mask-oriented
voltage profile control. PowerBase combines the advantages
of EptBase with the superior
SQA characteristics of thasingle-diffused ··process.
Moreover, itextE!nds these SOA
characteristics to PNP devices
as well as to the NPN structures
obtainable withsingle-diffused
technology.
THYRISTORS
Just the Package You've
Been Looking For!
Characteristics and
Ratings for Your Triggered
Power Switching
Applications
More than 20 packages, both metal
and plastic, with a variety of plastic
package leadform options. Such variety
allows flexibility of mounting in sockets,
printed circuit boards, and on heat sinks,
for higher diSSipation applications. High
power metal thyristors are available in
press-fit, stud, isolated stud or isolated
flange, for ease of mounting.
The wide variety of Thyristor· and
Trigger devices offered by Motorola is intended to serve a diversified market, in
which each application demands particular voltage, current, trigger and package
characteristics. Thyristors are divided
into these classes:
Radar Pulse Modulators
Handle 1000 Amperes Peak
Silicon Controlled Rectifiers (SCRs)-
A line of high speed, high pulse current
SCRs can provide the massive, short
duration pulses, with minimum variations
in rise time, needed by today's radar
systems. JAN speCification is available
for military applications.
.For dc and half-wave ac applications
Current. Range - 0.5 to 50 Amperes,
rms (Radar pulse
modulators to 1000
Amperes, peak)
Voltage Range - 25 to 800 Volts
Triac$ -
For; full-wave ac applications
Current Rarlge - 0.8 to 40 Amperes
,
rms
Voltage Range - 25 to 800 Volts
Experience, Flexibility and
Mass-Production Expertise
Recognizing that Thyristor users often
have technical requirements that no
available standard type can meet,
Motorola's engineers can quickly
evaluate new applications and produce
specially specified Thyristors with the
confidenc~ of having done it, in volume,
many times before.
-And lr,riggers
To mee~ the wide variety of input requiremer,lts, the following Trigger Devices
are supplied by Motorola:
Unijuliction Transistors (UJT) - For
.unidirectional, fixed threshold SCR
triggering.
Ruggedness and Reliability
Motorola Thyristors are designed into
thousands of high-stress power switching
applications worldwide ... and have proven themselves in the real world.
For example, the Plastic Thyristor
Reliability Guide shows samples with no
failure after. 1000 hours of High
Temperature Reverse Blocking, 10,000
Power Cycles, 50 cycles of Method 1051
Temperature Cycle, 4000 hours of High
Temperature Storage, and much more.
Motorola Thyristors can take it!
Programmable Unijunction Transistors
(PUn
~
For externally preset SCR
, ,triggering.
Bilateral Triggers (DIAC) - For bidirectional Triac Triggering
Silicon Bilateral Switches (SBS) - For
bidirectional, externally synchronized
triggering.
Optically Coupled Triac Drivers - For
driving isolated loads from sensitive
logic sources.
iii
Designers', EpiBase, PowerBase, Switch mode, and Thermopad are trademarks of Motorola.
iv
Alphanumeric Index
1·1
D
•
1-2
a
Alphanumeric Index
Device
Page
Device
Page
Device
Page
1N5758
1N5758A
1N5759
1N5759A
1N5760
1N5760A
1N5761
1N5761A
1N5762
1N5762A
7-2
7-2
7-2
7-2
7-2
7-2
7-2
7-2
7-2
7-2
2N2328
2N2329
2N2573
2N2574
2N2575
2N2576
2N2577
2N2578
2N2579
2N2646
7-14
7-14
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-19
2N3713
2N3714
2N3715
2N3715JAN
2N3715JTX
2N3715JTXV
2N3716
2N3716JAN
2N3716JTX
2N3716JTXV
4-33
4-33
4-33
2-15
2-15
2-15
4-33
2-15
2-15
2-15
2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
7-4
7-4
7-4
7-4
7-4
7-4
7-4
7-4
7-4
7-4
2N2647
2N3019
2N3019JAN
2N3019JTX
2N3020
2N3054
2N3054A
2N3055
2N3055A
2N3110
7-19
2-5
2-15
2-15
2-5
4-2
4-2
4-6
4-10
2-5
2N3719
2N3720
2N3734
2N3735
2N3735JAN
2N3735JTX
2N3735JTXV
2N3738
2N3739
2N3739JAN
4-39
4-39
2-5
2-5
2-15
2-15
2-15
4-44
4-44
2-15
2N691
2N692
2N1595
2N1596
2N1597
2N1598
2N1599
2N1842
2N1842A
2N1843
7-4
7-4
7-8
7-8
7-8
7-8
7-8
7-10
7-12
7-10
2N3244
2N3245
2N3439
2N3440
2N3441
2N3442
2N3445
2N3446
2N3447
2N3448
2-5
2-5
2-5
2-5
4-14
4-16
4-20
4-20
4-20
4-20
2N3739JTX
2N3740
2N3740A
2N3740JAN
2N3740JTX
2N3740JTXV
2N3741
2N3741A
2N3741JAN
2N3741JTX
2-15
4-50
4-50
2-15
2-15
2-15
4-50
4-50
2-15
2-15
2N1843A
2N1844
2N1844A
2N1845
2N1845A
2N1846
2N1846A
2N1847
2N1847A
2N1848
7-12
7-10
7-12
7-10
7-12
7-10
7-12
7-10
7-12
7-10
2N3467
2N3467JAN
2N3467JTX
2N3467JTXV
2N3468
2N3468JAN
2N3468JTX
2N3468JTXV
2N3506JAN
2N3506JTX
2-5
2-15
2-15
2-15
2-5
2-15
2-15
2-15
2-15
2-15
2N3741JTXV
2N3762
2N3762JAN
2N3762JTX
2N3762JTXV
2N3763
2N3763JAN
2N3763JTX
2N3763JTXV
2N3766
2-15
2-5
2-15
2-15
2-15
2-5
2-15
2-15
2-15
4-55
2N1848A
2N1849
2N1849A
2N1850
. 2N1850A
2N2322
2N2324
2N2325
2N2326
2N2327
7-12
7-10
7-12
7-10
7-12
7-14
7-14
7-14
7-14
7-14
2N3506JTXV
2N3507JAN
2N3507JTX
2N3507JTXV
2N3583
2N3584
2N3585
2N3668
2N3669
2N3670
2-15
2-15
2-15
2-15
4-26
4-26
4-26
7-21
7-21
7-21
2N3766JAN
2N3766JTX
2N3766JTXV
2N3767
2N37:71
2N3772
2N3773
2N3776JAN
2N3776JTX
2N3776JTXV
2-15
2-15
2-15
4-55
4-60
4-60
4-65
2-15
2-15
2-15
1-3
ft1tJ'IIGIIUIIIC"" IIIUCA \\JUlllil IUCUJ
•
Device
Page
Page
Device
Device
Page
2N3789
2N3790
2N3791
2N3791JAN
2N3791JTX
2N3791JTXV
2N3792
2N3792JAN
2N3792JTX
2N3792JTXV
4-70
4-70
4-70
2-15
2-15
2-15
4-70
2-15
2-15
2-15
2N4215
2N4216
2N4231A
2N4232A
2N4233A
2N4234
2N4235
2N4236
2N4237
2N4238
7-40
7-40
4-80
4-80
4-80
2-5
2-5
2-5
2-5
2-5
2N4949JTX
2N5038
2N5039
2N5050
2N5051
2N5052
2N5060
2N5061
2N5062
2N5063
'2N3867
2N3867JAN
2N3867JTX
2N3867JTXV
2N3868
2N3868JAN
2N3868JTX
2N3868JTXV'
2N3870
2N3871
4-39
2-15
2-15
2-15
4-39
2-15
2-15
2-15
7-24
7-24
2N4239
2N4240
2N4347
2N4398
2N4399
2N4399JAN
2N4399JTX
2N4399JTX
2N4441
2N4442
2-5
4-26
4-16
4-85
4-85
2-16
2-16
2-16
7-42
7-42
2N5064
2N5067
2N5068
2N5069
2N5164
2N5165
2N5166
2N5167
2N5168
2N5169
7"56
2-16
2-16
2-16
7-60
7-60
7-60
7-60
7-60
7-60
2N3872
2N3873
2N3896
2N2397
2N3898
2N3899
2N3902
2N3980
2N4103
2N4167
7-24
7-24
7-24
7-24
7-24
7-24
4-76
7-28
7-21
7-30
2N4443
2N4444
2N4851
2N4852
2N4853
2N4870
2N4871
2N4877
2N4898
2N4899
7-42
7-42
7-46
7-46
7-46
7-50
7-50
4-90
4-92
4-92
2N5170
2N5171
2N5190
2N5191
2N5192
2N5193
2N5194
2,N5195
2N5241
2N5301
7-60
7-60
4-112
4-112
4-112
4-116
4-116
4-116
2-16
4-120
2N4168
2N4169
2N4170
2N4171
2N4172
2N4173
2N4174
2N4183
2N4184
2N4185
7-30
7-30
7-30
7-30
7-30
7-30
7-30
7-30
7-30
7-30
2N4900
2N4901
2N4902
2N490.3
2N4904
2N4905
2N4906
2N4912
2N4913
2N4914
4-92
2-16
2-16
2-16
2-16
2-16
2-16
4-96
2-16
2-16
2N5302
2N5302JAN ,
2N5302JTX
2N5303
2N5303JAN
2N5303JTX '
2N5336
2N5337
2N5338
2N5339
4-120
2-16
2-16
4-120
2-15
2-15
.4-124
4-124
4-124
4-124
2N4186
2N4187
2N4188
2N4189
2N4190
2N4199
2N4199JAN
2N4200
2N4200JAN
2N4201
7-30
7-30
7-30
7-30
7-30
7-34
5-9
7-34
5-9
7-34
2N4915
2N4918
2N4919
2N4920
2N4921
2N4922
2N4923
2N4929
2N4930
2N4930JAN
2N5344
2N5345
2N5346
2N5347
2N5348
2N5349
2N5415
2N5416
2N5427
2N5428
4-128
4-128
4-132
4-132
4-132
4-132
2-5
2-5
4-136
4-136
2N4201JAN
2N4202
2N4202JAN
2N4203
2N4203JAN
2N4204
2N4204JAN
2N4212
2N4213
2N4214
5-9
7-34
5-9
7-34
5-9
7-34
5-9
7-40
7-40
7-40
2N4930JTX
2N4931
2N4931JAN
2N4931JTX
2N4931JTXV
2N4948
2N4948JAN
2N4948JTX
2N4949
2N4949JAN
2N5429
2N5430
2N5431
2N5441
2N5442
2N5443
2N5444
2N5445
2N5446
2N5567
4-136
4-136
7-64
7-66
7-66
7-66
7-66
7-66
7-66
. - 7-70
1-4
2-16
4-100
4-100
4-100
4-104
4-104
4-104
2-5
2-5
2-15
2-15
2-5
2-152-15
2-15
7-54
5-14
5-14
7-54
5-14
5-14
4-108
4-108
4-110
4-110
4-110
7-56
7-56
7-56
7-56
Alphanumeric Index (Continued)
Page
Page
Device
Page
Device
2N5568
2N5569
2N5570
2N5571
2N5572
2N5573
2N5574
2N5629
2N5630
2N5631
7-70
7-70
7-70
7-74
7-74
7-74
7-74
4-140
4-140
4-140
2N5977
2N5978
2N5979
2N5986
2N5987
2N5988
2N5989
2N5990
2N5991
2N6027
4-186
4-186
4-186
4-190
4-190
4-190
4-190
4-190
4-190
7-78
2N60718
2N6072
2N6072A
2N60728
2N5CJ73
2N6073A
2N60738
2N6074
2N6074A
2N60748
2N5632
2N5633
2N5634
2N5655
2N5656
2N5657
2N5679
2N5680
2N5681
2N5682
4-146
4-146
4-146
4-152
4-152
4-152
2-5
2-5
2-5
2-5
2N6028
2N6029
2N6030
2N6031
2N6034
2N6035
2N6036
2N6037
2N6038
2N6039
7-78
4-140
4-140
4-140
4-195
4-195
4-195
4-195
4-195
4-195
2N6075
2N6075A
2N6075B
2N6077
2N6078
2N6107
2N6109
2N6111
2N6116
2N6116JAN
7-82
7-82
7-82
4-219
4-219
4-221
4-221
4-221
7-86
5-14
2N5683
2N5683JAN
2N5683JTX
2N5683JTXV
2N5684
2N5684JAN
2N5684JTX
2N5684JTXV
2N5685
2N5685JAN
4-156
2-16
2-16
2-16
4-156
2-16
2-16
2-16
4-156
2-15
2N6040
2N6041
2N6042
2N6043
2N6044
2N6045
2N6049
2N6050
2N6051
2N6051JAN
4-200
4-200
4-200
4-200
4-200
4-200
4-205
4-209
4-209
2-15
2N6116JTX
2N6117
2N6117JAN
2N6117JTX
2N6118
2N6118JAN
2N6118JTX
2N6121
2N6122
2N6123
5-14
7-86
5-14
5-14
7-86
5-14
5-14
4-225
4-225
4-225
2N5685JTX
2N5685JTXV
2N5686
2N5686JAN
2N6586JTX
2N5686JTXV
2N5745
2N5745JAN
2N5745JTX
2N5745JTXV
2-15
2-15
4-156
2-16
2-16
2-16
4-85
2-16
2-16
2-16
2N6051JTX
2N6051JTXV
2N6052
2N6052JAN
2N6052JTX
2N6052JTXV
2N6053
2N6054
2N6055
2N6056
2-15
2-15
4-209
2-15
2-15
2-15
4-214
4-214
4-214
4-214
2N6124
2N6125
2N6126
2N6145
2N6146
2N6147
2N6151
2N6152
2N6153
2N6154
4-225
4-225
4-225
7-74
7-74
7-74
7-90
7-90
7-90
7-90
2N5758
2N5759
2N5760
2N5859
2N5861
2N5875
2N5876
2N5877
2N5878
2N5879
4-161
4-161
4-161
2-5
2-5
4-167
4-167
4-167
4-167
4-172
2N6057
2N6058
2N6058JAN
2N6058JTX
2N6058JTXV
2N6059
2N6059JAN
2N6059JTX
2N6059JTXV
2N6068
4-209
4-209
2-15
2-15
2-15
4-209
2-15
2-15
2-15
7-82
2N6155
2N6156
2N6157
2N6158
2N6159
2N6160
2N6161
2N6162
2N6163
2N6164
7-90
7-90
7-94
7-94
7-94
7-94
7-94
7-94
7-94
7-94
2N5880
2N5881
2N5882
2N5883
2N5884
2N5885
2N5886
2N5974
2N5975
2N5976
. 4-172
4-172
4-172
4-177
4-177
4-177
4-177
. 4-182
4-182
4-182
7-82
7-82
7-82
7-82
7-82
7-82
7-82
7-82
7-82
7-82
2N6165
2N6167
2N6168
2N6169
2N6170
2N6171
2N6172
2N6173
2N6174
2N6186
7-94
7-98
7-98
7-98
7-98
7-24
7-24
7-24
7-24
4-229
2N6068A
2N60688
2N6069
2N6069A
2N60698
2N6070
2N6070A
2N60708
2N6071
2N6071A
1-5
Device
7-82
7-82
7-82
7-82
7-82
7-82
7-82
7-82
7-82
7-82
•
Alphanumeric Index (Continued)
•
Device
Page
Page
Device
2N6187
2N6188
2N6189
2N6190
2N6191
2N6192
2N6193
2N6211
2N6212
2N6213
4-229 '
4-229
4-229
4-233
4-233
4-233
4-233
4-237
4-237
4-237
2N6294
2N6295
2N6296
2N6297
2N6298
2N6299
2N6300
2N6301
2N6303
2N6306
4-258
4-258
4-258
4-258
4-214
4-214
4-214
4-214
4-39
4-263
2N6226
2N6227
2N6228
2N6229
2N6230
2N6231
2N6233
2N6234
2N6235.
2N6236
4-161 '
4-161
4-161
4-146
4-146
4-146
4-241
4-241
4-241
7-102
2N6307
2N6308
2N6312
2N6313
2N6314
2N6315
2N6316
2N6317
2N6318
2N6338
4-263
4-263,
4-80 '
4-80
4-80
4-267
4-267
4-267
4-267
4-273
2N6338JAN
2N6338JTX
2N6338JTXV
2N6339
2N6340
2N6341
2N6341JAN
2N6341JTX
2N6341JTXV
2N6342
2-15
2-15
2-15
4-273
4-273
4-273 .
2-15
2-15
2-15
2N6342A
2N6343
2N6343A
2N6344
2N6344A
2N6345
2N6345A
2N6346
2N6346A
2N6347
7-108
7-104
7-"108
7-104
7-108,
7-104
7-108
7-104
7-108
7-104
2N6489
2N6490
2N6491
2N6495
2N6497
2N6498
2N6499
2N6504
2N6505
2N6506
2N6347A
2N6348
2N6348A
2N6349
2N6349A
·2N6377
2N6378
2N6378JAN
2N6378JTX
2N6378JTXV
7-108
7-104
7-108
7-104
7-108
4-277
4-277
2-16
2-16
2-16
2N6507
2N6508
2N6509
2N6542
2N6543
2N6544
2N6545
2N6546
2N6546JAN
2N6546JTX
2N6379
2N6379JAN
2N6379JTX
2N6379JTXV
2N6383
2N6384
2N6385
2N6386
2N6387
2N6388
4-277
2-16
2-16
2-16
4-281
4-281
4-281
4-285
4-285
4-285
2N6546JTXV
2N6547
2N6547JAN
2N6547JTX
2N6547JTXV
2N6548
2N6549
2N6551
'2N6552
2N6553
7-102
, 7-102
7-102
7-102
7-102
4-245
4-245
4-245
4-60
4-249
2N6237
2N6238
2N6239
2N6240
, 2N6241
2N6249
2N6250
2N6251
2N6257
2N6274
2N6274JAN
2N6274JTX
2N6274JTXV
2N6275
2N6276
2N6277
2N6277JAN
2N6277JTX
2N6277JTXV
2N52824
,
2-16
2-16
2-16
4-249
4-249
4-249
2-16
2-16
2-16
4-253
2N6283
2N6283JAf\J
2N6283JTX
2N6283JTXV
2N6284
2N6284JAN
2N6284JTX
2N6284JTXV
2N6285
2N6286
4-253
2-15
2-15
2-15
4-253
2-15
2-15
2-15
4-253
4-253
2N6286JAN
2N6286JTX
2N6286JTXV
2N6287
2N6287JAN
2N6287JTX
2N6287JTXV
2N6288
2N6290
2N6292
2-15
' 2-15
2-15
4-253
2-15
2-15
2-15
4-221
4-221
4-221
-
1-6
7~104
Page
Device
2N6394
- 2N6395
2N6396
2N6397
2N6398
2N6399
2N6400
2N6401
2N6402
2N6403
7-112
7-112
7-112
7-112
2N6404
2N6405
2N6420
2N6421
2N6422
2N6423
2N6424
2N'6425
2N6436
2N6437
7-116
7-116
4-26
4-26
4-26
4-26
4-44
4-44
4-289
4-289
7~112
7-112
7-116
7-116
7-116
7-116
2N6437JAN
2N6437JTX
2N6437JTXV
2N6438
2N6438JAN
2N6438JTX
2N6438JTXV
2N6486
2N6487
' 2N6488
2-15
2-15
2-15
4-289
2-15
2~15
2-15
4-293
4-293
4-293
' 4-293~
4-293
4-293 '
4-298,
4-'302,
4-302
4-302
7-120
7-120 '
7--120
7-120
7~120
7-120
4-"306
4-306
4-314
4-314
~322
2-15
2-15
'-,
2-15
4-322
2-15
2-15
2-15
. 4-330
4-330
4-334
4-334
4-334
Alphanumeric Index (Continued)
Device
Page
Device
Page
2N6554
2N6555
2N6556
2N6557
2N6558
2N6559
2N6569
2N6576
2N6577
2N6578
4-338
4-338
4-338
4-342
4-342
4-342
4-346
4-350
4-350
4-350
040P1
040P3
040P5
04101
04102
04104
04105
04107
04108
041010
4-394
4-394
4-394
4-378
4-378
4-378
4-378
4-378
4-378
4-378
MCR729
MCR1718
MCR1906
MCR3818
MCR3835
MCR3918
MCR3935
MOS20
MOS21
MOS23
7-170
7-172
7-174
7-176
7-180
7-176
7-180
4-398
4-398
2-9
2N6591
2N6592
2N6593
2N6594
2N6609
2N6648
2N6649
2N6650
BU108
BU204
4-354
4-354
4-354
4-358
4-65
4-281
4-281
4-281
2-16
4-362
041011
041013
041014
041E1
041E5
041E7
041K1
041K2
041K3
041K4
4-378
4-378
4-378
4-382
4-382
4-382
4-386
4-386
4-386
4-386
MOS24
MOS25
MOS26
MOS27
MOS60
MOS73
MOS74
MOS75
MOS76
MOS77
2-9
2-9
4-402
4-402
4-404
2-9
2-9
2-9
4-402
4-402
BU205
BU207
BU208
C35
C106
C122
C228
C228( )3
C229
C230
4-362
4-368
4-368
7-124
7-126
7-128
7-130
7-130
7-130
7-132
MAC15
MAC15A
MAC20
MAC20A
MAC25
MAC25A
MAC35
MAC36
MAC37
MAC38
7-134
7-134
7-138
7-138
7-138
7-138
7-140
7-140
7-144
7-144
MOS1678
MJ205
MJ410
MJ411
MJ413
MJ423
MJ431
MJ802
MJ804
MJ900
4-406
2-16
4-408
4-408
4-410
4-410
4-410
4-412
2-16
4-414
C230( )3
C231
C231( )3
C232
C233
040C1
040C2
040C4
040C5
04001
7-132
7-132
7-132
7-132
7-132
4-374
-4-374
4-374
4-374
4-378
MAC50
MAC50A
MAC92
MAC220
MAC221
MAC40688
MAC40689
MAC40690
MBS4991
MBS4992
7,-138
7-138
7-148
7-104
7-104
7-66
7-66
7-66
7-152
7-152
MJ901
MJ1000
MJ1001
MJ1800
MJ2252
MJ2500
MJ2501
MJ2955
MJ2955A
MJ3000
4-414
4-414
4-414
2-16
2-16
4-416
4-416
4-6
4-10
4-416
04002
04004
04005
, 04007
04008
040010
040011
040013
040014
040E1
4-378
4-378
4-378
4-378
4-378
4-378
4-378
4-378
4-378
4'-382
MCR63
MCR64
MCR65
MCR100
MCR101
MCR102
MCR103
MCR104
MCR106
MCR115
7-156
7-156
7-156
7-158
7-160
7-160
7-160
7-160
7-162
7-164
MJ3001
MJ3029
MJ3030
MJ3040
MJ3041
MJ3042
MJ3771
MJ3772
MJ3773
MJ4030
4-416
4-418
4-418
4-420
4-420
4-420
2-16
2-16
2-16
4-422 '
040E5
040E7
040K1
- 040K2
040K3
040K4
040N1
040N2
040N3
040N4
4-382
4-382
4-386
4-386
4-386
4-386
4-390
4-390
, 4-390
- 4-390
7-164
7-166
7-166
7-166
7-166
7-166
7-166
7-112
7-116
7-16
MJ4031MJ4032
MJ4033
MJ4034
MJ4035
MJ4502
MJ4645
MJ4646
MJ4647
MJ6700
4-422
4-422
4-422
4-422
4-422
4-424
4-426
4-426
4-426
4-428
,
.
MCR120
MCR201
MCR202
MCR203
MCR204
-MCR205
MCR206
MCR220
MCR221
MCR649AP
1-7
Device
Page
Alphanumeric Index (Continued)
•
Device
Page
Device
Page
Device
Page
MJ7160
MJ7161
MJ8100
MJ9000
MJ10000
MJ10001
MJ10002
MJ10003
MJ10004
MJ10005
2-16
2-16
4-430
2-17
4-432
4-432
4-438
4-438
4-444
4-444
MJ15014
MJ15015
MJ15016
MJ15022
MJ15024
MJE31
MJE31A
MJE31B
MJE31C
MJE32
2-6
4-10
4-10
4-527
4-527
2-17
2-17
2-17
2-17
2-17
MJE710
MJE711
MJE712
MJE720
MJE721
MJE722
MJE800
MJE801
MJE802
MJE803
2-17
2-17
2-17
2-17
2-17
2-17
4-561
4-561
4-561
4-561
MJ10006
MJ10007
MJ10008
MJ10009
MJ10011
MJ10012
MJ10013
MJ10014
MJ10015
MJ10016
4-450
4-450
4-456
4-456
4-462
4-464
4-468
4-468
4-474
4-474
MJE32A
MJE32B
MJE32C
MJE5H
MJE52T
MJE53T
MJE105
MJE170
MJE171
MJE172
2-17
2-17
2-17
4-530
4-530
4-530
4-533
4-535
4-535
4-535
MJE1090
MJE1091
MJE1092
MJE1093
MJE1100
MJE1101
MJE1102
MJE1103
MJE1290
MJE1291
2-17
2-17
2-17
2-17
2-17
2-17
2-17
2-17
4-563
4-563
MJ11011,
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
MJ11017
MJ11018
MJ11019
MJ11020
4-479
4-479
4-479
4-479
4-479
4-479
2-2
2-2
2-2
2-2
MJE180
MJE181
MJE182
MJE200
MJE205
MJE210
MJE220
MJE221
MJE222
MJE223
4-535
4-535
4-535
4-543
4-539
2-17
2-17
2-17
2-17
MJE1660
MJE1661
MJE1909
MJE2360T
MJE236H
MJE2801
MJE280H
MJE2901
MJE290H
MJE2955
4-563
4-563
4-565
4-567
4-567
4-569
4-569
4-569
4-569
4-571
MJ11021
MJ11022
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
MJ12002
MJ12004
2-3
2-3
4-481
4-481
4-481
4-481
4-481
4-481
4-483
4-489
MJE224
MJE225
MJE230
MJE231
MJE232
MJE233
MJE234
MJE235
MJE240
' MJE241
2-17
2-17
2-17
2-17
2-17
2-17
2-17
2-17
4-545
4-545
MJE2955T
MJE3055
MJE3055T
MJE3300
MJE3301
MJE3302
MJE3310
MJE3311
MJE3312
MJE3439
MJ12005
MJ13014
MJ13015
MJ13330
MJ13331
MJ13332
MJ13333
MJ13334
MJ13335
MJ14000
4-495
4-497
4-497
4-503
4-503
4-509
4-509
4-509
4-509
4-515
MJE242
MJE243
MJE244
MJE250
MJE251
MJE252
MJE253
MJE254
MJE340
MJE341
4-545
4-545
4-545
4-545
4-545
4-545
4-545
4-549
4-551
MJE3440
MJE6040
MJE6041
MJE6042
MJE6043
MJE6044
MJE6045
MJE13002
MJE13003
MJE13004
MJ14001
MJ14002
MJ14003
MJ15001
MJ15002
MJ15003
MJ15004
MJ15011
MJ15012
MJ15013
4-515
4-515
4-515
4-517
4-517
4-521
4-521
4-525
4-525
2-6
MJE344
MJE350
MJE370
MJE371
MJE520
MJE521
MJE700
MJE701
MJE702
MJE703
4-551
4-553
4-555
4-557
4-559
2-17
4-561
4-561
4-561
4-561
MJE13005
MJE13006
MJE13007
MJE13008
MJE13009
MJE15028
MJE15029
MJE15030
MJE15031
MM3007
4~539
4~545
1-8
!
4-571
4-571
4-571
4-573
4-573
4-573
4-573
4-573
4-573
4-575
4-575
' 4-200
4-200
4-200
4-200
4-200
4-200
4-577
4'-577
4-585
4-585
4-593
4-593
4-601
4-601
4-609
4-609 '
4-609
4-609
2-5
Alphanumeric Index (Continued)
Page
Device
MM4030
MM4031
MM4032
MM4033
MM4036
MM5007
MOC3010
MOC3011
MPS-U01
MPS-U01A
Page
Device
Device
. Page
2-5
2-5
2-5
2-5
_2-5
2-5
7-182
7-182
4-611
4-611
SC250( )3
SC251
SC260
SC260( )3
SC261
SE9300
SE9301
SE9302
SC9400
SC9401
7-210
7-210
7-212
7-212
7-212
2-17
2-17
2-17
2-17
2-17
TIP42
TlP42A
TlP42B
TlP42C
TlP47
TIP48
TIP49
TlP50
TIP100
TIP101
4-655
4-655
4-655
4-655
4-659
4-659
4-659
4-659
4-663
4-663
4-613
4-615
4-615
4-619
4-619
4-621
4-623
4-627
4-631
4-635
SC9402
T2300P
T2301P
T2302P
T2500
T2800
T2801
T2802
T4100
T4101
2-17
7-214
7-214
7-214
7-216
7-218
7-220
7-218
7-74
7-70
TlP102
TIP105
TIP106
TIP107
TIP110
TIP111
TIP112
TIP115
TlP116
TIP117
4-663
4-663
4-663
4-663
4-668
4-668
4-668
4-668
4-668
4-668
4-635
4-637
4-639
4-639
4-641
4-643
4-645
1<-186
7-186
7-186
T4110
T4111
T4120
T4121·
T6400
T6401
T6410
T6411
T6420
T6421
7-74
7-70
7-222
7-70
7-224
7-226
7-224
7-226
7-224
7-226
TlP120
TIP121
TIP122
TIP125
TIP126
TlP127
4-673
4-673
4-673
4-673
4-673
4-673
MPU6027
MPU6028
MU10
MU20
. MU2646
MU4891
MU4892
MU4893
. MU4894
S2800
7-190
7-190
7-194
7-194
7-196
7-198
7-198
7-198
7-198
7-200
TlP29
TIP29A
TlP29B
TIP29C
TIP30
TIP30A
TlP30B
TIP30C
TIP31
TIP31A
4-649
4-649
4-649
S6200
S6210
S6220·
SC136
SC141
'SC146
SC245
SC245( )3
SC246
SC250
7-202
7-202
7-202
7-204
7-206
7-206
7-208
i.
.,
... 7-208
7-208
. 7-210
TIP318
TlP31C
TIP32
TIP32A
TlP328
TIP32C
TlP41
TIP41A
TlP41B
TlP41C
4-651
4-651
4-651
4-651
4-651
4-651
4-655
4-655
4-655
4-655
MPS-U02
MPS-U03
MPS-U04
. MPS-U05
MPS-U06
MPS-U07
MPS-U10
MPS-U31
MPS-U45
MPS-U51
MPS-U51A
MPS-U52
MPS-U55
MPS-U56
MPS-U57
MPS-U60
MPS-U95
MPU131
MPU132
MPU133
4~649
4-649
4-649
4-649
4-649
4-651
4-651
.,
~1
It,!:
"
:
.
,
. 1-9
•
•
i'
/
1-10
/
power Transistor selector Guide
II
•
2-2
Motorola Standard Silicon Power Transistors
Arranged by Package
TO-3
~~
Min
CASE 197-01 - 60-mil pins
2.5
1300'
1500'
3
250
275
350
ts
Device Typo
325
2N3902
120
200
250
300
2N4347
MJ410
MJ3029
MJ411
2N6542
MJ3030
2N6543
BU207
8U208
MJ12004
100
120
140
250
2N575B
2N5759
2N5760
MJ15011
7
300
350
7.5
8
1.11
2
8/40
10/50
10/50
30/90
15/60
30/90
3
0.1 typ
I
2.8
100
25/100
3
5
5
60
MJ1000
2N6055
MJ1001
2N6056
2N6306
2N6307
2N6544
2N6308
2N6545
MJ100ll
MJ12005
lk min
750/18k
lk min
750/18k
3
4
3
4
3
100
120
140
150
200
15175
15175
7/35
12160
7/35
20 min
5 min
2N3790
2N3792
2N5876
MJ2501
2N6229
2N6230
2N6231
MJ11017
MJll019
36
36
75
1.2 !yp
40/120
40/120
80
4 tvP
4 !yp
4 typ
1
2N3447
2N3448
2N3789
2N3791
2N5875
MJ2500
2
2
2
100
60
BO
2N6383
2N3713
2N3715
2N5877
MJ3000
2N6384
2N3714
2N3716
2N5878
MJ3001
2N6385
2N5632
2N5633
2N5634
2N3442
MJ11018
MJll020
0.75 typ
0.75 typ
1
lk120k
15 min
30 min
20/100
lk min
lk120k
15 min
30 min
20/100
lk min
lk/20k
25/100
20/80
15/60
20170
100 min
100 min
@25°C \
5
5
5
2.5
2.5
40
60
Min
3
3
250 min
250 min
350
400
1400'
1500'
Amp
@ IC
3
MJ3041
MJ3042
80
J.l.s
Max
0.4 typ
0.4 typ
0.4 typ
"32
MJ900
2N6053
MJ901
2N6054
Watts
J.l.S
1 typ
1 typ
1 typ
2
7/35
3.75 min
7/35
2.25 min
2.25 min
2.5 min
/tll
Po (Case)
'T
MHz
2
2
1
0.4
1
3
3
3
4.5
4.5
4.5
30/90
.
Max
2
30 min
2N6226
2N6
B
3
6
~
~
30
10
,3Q
JD
~
TO-59
Min
NPN
7
80
100
2N5347
2N5349
10
60
80
100
~
,~~
••
STYLE
PIN 1:
1. EMITTER
2. BASE'
Stud mounted devices; power dissipa·
3. COLLECTOR
tion 60 watts at 25°C case.
Cevice Type
Max
10
.30
CASE 160·03
."Q
leeont VeEO(sus)
'Amps
Volts
_5_
;tUl
PNP
MJ6700
2N6187
2N6189
hFE @ Ie
MiniMax Amp
60/240
60/240
25/180
601240
60/240
2-6
Resistive Switching·
ts
~
p.s
p.s @ Ie
Max
Max
Amp
't '
fT
MHz
Pc (Case)
Min
@25°e
Watts
2
2
2
2
0.2
0.2
2
.2
30
30
60
60
2
2
2
1
2
2
0.15
0.2
0.2
2
2
2
30
30
30
60
60
60
3
TO-66
~~~
¥,,<"
ICCont VCEO(sus
Volts
Amps
Max
Min
1
40
60
80
175
225
250
300
2
120
150
200
225
250
300
CASE 80·02
For single side mounting; power dissi·
pation of 20 to 90 watts at 25 0 C case.
Device Type
NPN
PNP
2N4912
2N3583
2N3738
2N3739
2N5050
2N5051
2N5052
2N3584
2N3585
350
3
140
4
60
2N6211
2N6421
2N6212
2N6422
2N6213
2N3441
2N3054,A
2N3766
2N6294
80
2N3767
2N6295
5
2N4898
2N4899
2N4900
2N6420
2N6424
2N5344
2N6425
2N5345
2N3740
2N6049
2N6296
2N3741
2N6297
40
60
80
225
275
325
2N4231A
2N4232A
2N4233A
2N6233
2N6234
2N6235
2N6312
2N6313
2N6314
60
80
2N6315
2N6428
2N6316
2N5430
M.16014
2N6078
2N6077
2N6317'
7
100
150
250
275
8
60
80
2N6300
2N6301
10
80
2N6495
~
3_~
2
'.. 1
2N6318
hFE @ IC
MiniMax Amp
20/100
20/100
401200
401200
251-100
401200
25/100
25/100
25/100
25/100
10/100
25/100
10/100
25/100
10/100
0.75
0.75
0.75
1
1
1
1
1
25/100
30/100
25/100
40/160
750/1Bk
0.25
0.5'
0.5
2
~~/l00
0~25
2N6298
2N6299
20/100
40 min
12170
12170
750/1Bk
750/18k
10/60
Max
0.6 tvo 0.3 tvo
0.6 typ 0.3 typ
0.6 typ_ 0.3 typ
2 typ 0.23 typ
3 tyO
0.3 typ
0.6
0.1
3 typ
0.3 typ
0.6
0.1
3.5
3.5
3.5
2.5
4
2.5
4
2.5
1.2
1.2
1.2
0.6
3
0.6
3
0.6
0.5
2
1.5
1.5
1.5
1
1
1
0.5 typ 0.21yp
0.51YO 0.21Yp
0.5typ_ 0.2 !yp
3.5
0.5
3.5
0.5
3.5
0.5
Amp
Min
@25 D C
0.5
0.5
0.5
0.5
0.1
0.5
0.1
0.5
3
3
3
10
10
60
10
60
25
25
25
35
20
40
20
40
0.75
0.75
0.75
1
1
1
1
1
10
10
10
20
10
20
10
20
40
40
40
35
35
35
35
35
0.2
25
4
3
10
4#
4
10
4
25
75
20
50
25
20
50
1.5
1.5
1.5
1
1
1
4
4
4
20
20
20
75
75
75
50
50
50
90
40
90
40
50
45
45
0.27 typ 0.25
0.3 typ 0.5
0.09 typ 0.5
0.7 !yp
2
0.27 typ 0.25
0.09 typ 0.5
0.71yp
2
1
2
1
2
O.B
0.2
O.B
0.2
2.5
2
2.5
2
2.B
2.B
0.3
0.3
1.2
1.2
4
30
4
30
10
1
1
4
4
1.51vo
1.51yp
1.51vo
1.5 typ
4
4
4#
4#
75
75
10
25
70
0.151yp 0.051yp
STYLE 1
(Case 77 on "[abies) :
PIN 1. EMITTER
2. COLLECTOR
For lead mounted applications or use
3. BASE
with heat sinks; power dissipation of
15 to 40 watts at 25 0 C case.
Max
Min
0.3
250
350
MJE3440
MJE3439
40/160
40/160
0.5
150
200
MJE341
MJE344
251200
30/300
PNP
hFE
MiniMax
Resistive Switching
tf
ts
I'S
I'S @ Ie
STYLE 3
(Case 77R on Tables)
PIN 1. BASE
2. COLLECTOR
3. EMITTER
fT
MHz
Po (Case)
Min
@25 D e
0.02
0.02
15
15
15
15
0.05
0.05
15
15
@ Ie
Amp
2-7
Watts
2.5
2
2.5
2
1
1.2
1.2
10
Max
Max
0
Po (Case)
TO-126
Device Type
2
'0
fT
MHz
CASE 77'03
PLASTIC
V~EO(SUS)
NPN
Max
1.3 typ
1 typ
0.9 typ
0.9 typ_
1.3 typ
0.9 typ
0.9 typ
25 100
25/125
25/125
25/125
20/100
60/240
601240
. MJ16013
Resistive Switching
tf
ts
I's @ IC
I'S
'0.5
40/160
750/18k
25/100
25/100
ICeont
Amps
Volts
0.5
0.5
0.5
0.5
0.1
0.5
0.1
0.5
20/100
(D
STYLE 1:
.
PIN 1. BASE
0
2. EMITTER
CASE. COL'LECTOR
Amp
Watts
20.B
20.B
,continued)
•
TO-126
(conti nuedl
ICCont Iv.
Amps
Volts
Max
0.5
(cont'd)
•
1.5
3
4
PNP
Min
NPN
250
300
2N5655
350
1
Device Type
40
61l
80
300
400
30
, 40
60
80
~~:::~
•
2N4918
2N49'19
2N4920
MJE13002.
MJE13003.
MJE520
MJE'180
MJE'IS'
MJE182
2N5190
MJE521
2N6037
60
'
80
:~~~6~~
5
25
!
2N6036
MJE253
MJE200
MJE210
20
2f l!
Watts
0.24 tyO
0.1
10
~g~~~g
3.5 tyO
3.5 typ
0.24 tyO
U.£4 typ
0.1
U.l
10
lU
0.5
I.b
U.S
0.6 tyO
1.1i tyO
U.6 'yp
0.3 typ
.J ,y~
0.3 typ
0.5
'.b
0.5,
3
J
3
30
JL
3U
1
1
4
4
0.7
0.7
1
1
5
5
.40
40
1.6 typ
U.1i typ
0.1i typ
2 typ
U,12 typ
U.12 typ
U,
U.l
5C
OU
25
12.5
12.0
12,b
0.4 typ
0.4typ
1.5
1.7 typ
1.2 typ
2
20/100
£()I"UU
20/10U
5/25
5125
i~/~6"o
MJE243
@25°C
3.5 tyO
~~~~~JO.
'Y'.J!,3~.'2.
Min
0.1
50/250
~~:;:~'. ~:;:~'.
~:g~~
~~:~~~
Po (Case)
°6°15
U.l
MJE370
MJE' 7~
MJE' 7'
MJE172
MJE371
2N6034
fT
MHz
301250
3U/l5U
2N5657
40
100
MJE350
@ IC
hFE
MiniMax Amp
Resistive
tf
ts
JiS
Jis @ IC
Max
Max
Amp
25 min
50125e
5U/25U
40 min
750/18k
;~/~~
750 min
750/18k
lk min
750/1 Elk_
40/120
45/180
J
U.
0.1
1
1.5
1
2
1
1.5
1.5
2
1
0.4 typ
0.4 typ
1.5
1.7 tyO
1.2 tyO
2
bO
20
2
25
2~#
o
lU
15
40
40
40
!~
1#
25
2011
40
40
15
0.2
i
0.4typ 0.4 typ
1:7 tyO 1.2 tyO
0.7 typ 0.08 typ
1.5
2
0.2
25
40
40
15
2
0.13 typ 0.035 tyli
2
65
15
-Case 77R (Style 3)
TO-127
CASE 90·05
PLASTIC
"
3
IcCont vCEO(sus)
Amps
Volts
Device Type
hFE @ IC
MiniMax Amp
Max
Min
NPN
PNP
5
40
50
60
80
2N5977
MJE205
2N5978
2N5979
2N5974
MJE105
2N5975
2N5976
20/120
25/100
25/100
20/120
2.5
2
2.5
2.5
60
80
100
MJE6043
MJE6044
MJE6045
MJE6040
MJE6041
MJE6042
lk120k
lk/20k
lk120k
4
4
4
20/70
20/120
20/120
20/120
20/100
20/100
4
8
STYLE'2:
PIN 1. EMITTER
2 .. COLLECTOR
3. BASE
For lead mounted applications or use
with heat sinks; power dissipation
of 40 to 100 watts at 25°C case.
10
60
MJE3055
MJE2955
12
40
60
80
2N5989
2N5990
2N5991
2N5986
2N5987
2N5988
15
40
60
MJE1660
MJE1661
MJE1290
MJE1291
2-8
6
6
6
5
5
Resistive Switching
tf
ts
Jis @ IC
Jis
Amp
Max
Max
iT
MHz
Po (Case)
Min
@25°C
Watts
0.45typ 0.18 typ
2~_
2
0.45typ 0.18 typ
0.45typ 0.18 typ
2.5
2.5
2
75
65
75
75
4#
4#
4#
75
75
75
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
0.5 typ
0.5 typ
0.5 typ
0.25 typ
0.25 typ
0.25 \yp
4
4
4 ,"
6
6
6
2
2
90
2
2
2
100
100
100
3
3
90
90
$3
1_-<-::
~
2 .:c .. :_..
3'-/
ICCont VCEO(sus)
Amps
Volts
Max
Min
0.5
65
300
Devica Type
NPN
PNP
MPS-U31
MPS-U10
MPS-U60
MPS-U52
O.S
40
MPS-U02
1
120
1S0
MPS-U03
MPS-U04
2
30
40
MPS-U01
MPS-U01A
MPS-U45
MPS-U05
MPS-U06
MPS-U07
60
SO
100
"~
ICCont VCEO(sus)
Amps
Volts
Max
Min
0.1
250
MPS-U51
MPS-U51A
MPS-U95
MPS-U55
MPS-U56
MPS-U57
10min
30min
Po (Case)
Min
@25°C
0.1
0.030
60
10
10
30 min
0.5
150
10
0.010
0.010
100
100
10
10
50min
50 min
4k min
60 min
60 min
30 min
1
1
1
0.25
0.25
0.25
50
50
100
50
50
50
10
10
10
10
10
10
.h FE
@ Ie
MiniMax Amp
0.02
0.02
0.02
0.02
10k/60k
40k min
10k/60k
40k min
40 min
401200
40 min
301200
40 min
300
D40C1
D40C2
D40C4
D40C5
D40P1
2N6591
D40P3
2N6592
D40P5
2N6557
MDS20
2N6593
2N655S
350
MDS21
2N6559
0.2
0.2
0.2
0.2
0.08
.1
0.08
0.1
O.OS
0.03
0.03
0.1
0.03
0.03
0.03
0.03
40
120
150
1S0
200
225
250
STYLE 1:
PIN.!.
2.
3.
4.
CASE 306
For lead or chassis mounted applications or use with heat sink; power dissipation of 2 to 10 watts.
PNP
40/180
401250
301200
40/180
MDS60
Watts
40min
40 min
30/90
60/1 SO
30/90
60/180
30
Resistive Switching
ts
~
p.s @ IC
p.s
Amp
Max
Max
TO-202
Device Tvpe
NPN
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
fT
MHz
hFE @ IC
MiniMax Amp
D40N1
D40N2
D40N3
D40N4
300
0.5
CASE 152
For lead or chassis mounted application or use with heat sink; power dissipation of 1 to 10 watts.
30 mIn
401250
40/180
Resistive Switchinn
tf
ts
p.s
p.s @ Ie
Max
Max
0.35 typ 0.8 typ
0.35 typ 0.8 ty~
0.35 typ 0.8 typ
0.35 typ 0.8 typ
2.5
Amp
1
1
1
1
0.08
2.5
0.08
2.5
0.08
EMITTER
BASE
COLLECTOR
COLLECTOR
fT
MHz
Po (Casel
Min
@25°C
50
50
50
50
6.25
6.25
6.25
6.25
100
100
100
100
50
35
50
35
5
45
60
35
45
45
60
45
6.25
6.25
6.25
6.25
6.25
10
6.25
10
6.25
10
10
10
10
10
10
10
Watts
(continued)
2-9
•
TO-202 (continued)
ICCont VCEO(SUS)
Amps
Volts
)
Device Type
Max
Min
NPN
PNP
1
30
04001
04002
04004
04005
2N6551
04007
0400B
040010
040011
040013
040014
2N6552
12N6553
04101
04102
04104
04105
2N6554
04107
0410B
041010
041011
041013
041014
2N6555
2N6556
040El
040Kl
040K3
2N654B
2N6549
040K2
040K4
040E5
ID40E7
041El
041Kl
041K3
•
45
60
75
BO
100
2
30
40
50
60
BO
3
40
60
65"
80
100
MOS26t
MOS23
MDS27t
MOS167B
MOS24
MOS25
041K2
041K4
041E5
041E7
MOS76t
MOS73
MOS77t
MOS74
MOS75
@IC
hFE
MiniMax Amp
25 min
25 min
1
1
1
1
0.5
1
1
1
1
0.1
0.1
0.5
0.5
10min
lk min
lk min
5k min
3k min
lk min
lk min
10 min
10min
1
1.5
1.0
1
1
1.5
1.0
1
1
10min
20 min
10 min
10 min
25 min
10min
10min
10 min
10 min
. 50/150
50/150
ts
p.s
Resistive Switching
tf
p.s @IC
Max
Max
'T
MHz
Po (Case)
Amp
Min
@25°C
200 typ
200 !yp
200 typ
200 typ
75
200 typ
200 typ
200 typ
200 typ
200 typ
200 tvo
75
75
10
10
10
10
10
10
10
10
10
10
10
10
10
230 typ
100
100
100
100
100
100
230 typ
220 typ
8
10
10
10
10
10
10
8
8
0.2
·0.2
0.2
0.2
typ
typ
typ
tvo
0.05
0.05
0.05
0.05
typ
tvp
typ
tvo
1
'1
1
1
0.2
0.2
0.2
0.2
0.2
0.2
typ
typ
typ
typ
typ
tvo
0.05
0.05
0.05
0.05
0.05
0.05
typ
typ
typ
typ
typ
tvo
1
1
1
1
1
1
0.4 typ
0.17 typ
1
0.4 typ
0.4 typ
0.17 typ
0.17 typ
1
1
Watts
30 min
501250
30 min
10 min
501250
1.0
50
10
0.1
10
50
1.0
50
10
10
1.5
100
10
0.1
50
50/250
0.1
10
50
t Pin out is: Pinl-Base. Pin2-Collector. Pin3-Emitter. Pin4-Collector
TO-220
CASE 221A-02
PLASTIC •
4
,
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
For lead mounted applications or use
with heat sinks; power dissipation
of 40 to 100 watts at 25°C case.
2
3
,
Resistive Switching
ICCont VCEO(sus)
Amps
Volts
Max
0.5
Min
350
Device Type
NPN
PNP
MJE2360T
MJE2361T
15 min
1
40
60
80
100
250
300
350
400
TIP29
TIP29A
TIP29B
TIP29C
TIP47
TIP4B
TIP49
TIP50
TIP30
TIP30A
TIP30B
TIP30C
2
60
80
100
TIPll0
TIPlll
TIP112
TIPl15·
TIPl16
TIP117
40
60
75
80
100
TIP31
TIP31A
MJE1909
TIP31B
TIP31C
TIP32
TIP32A
3
hFE @ IC
MiniMax Amp
40 min
15175
15175
15175
15175
30/150
30/150
30/150
30/150
t,
p.s
Max
Max
@ IC
Amp
0.1
0.1
1
1
1
1
0.3
0.3
0.3
0.3
500 min
min
5
500 min
2
2
2
25 min
25 min
1
1
0.5
1
1
20/150
TIP32B
TIP32C
ts
p.s
25 min
25 min
0.3 typ
0.3 ty~
0.6J~ 0.3 tl'P
0.6 !yp 0.3 tvP
0.18M>.
2 tvo
2 tvp 0.18 !yp
2 tyO 0.18 tvp
2 typ 0.18 !yp
0.6 tvP
0.6 typ
1.7ty~
1
1
1
1
0.3
0.3
0.3
0.3
"T
MHz
Po (Case)
Min
@25°C
10 tvp
10 typ
30
30
3
3
3
3
10
10
10
·10
Watts
!
30
30
30
30
40
40
40
40
1.7 tvo
1.7 tvp
1.3 tvp·
1.3 tvo
1.3 typ
2
2
2
25#
25#
25#
50
50
50
0.6 typ
0.6 tvp
0.3 tvp
0.3 typ
1
1
0.6 typ
0.6 !yp
0.3 typ
0.3 !yp
1
1
3
3
100
3
3
40
40
10
40
40
# I hie I @ 1 MHz
(continued)
2-10
TO-220 (continued)
ICCont VCEOlsus)
Amps
Volts
Device Type
Max
4
Min
46
60
BO
300
400
NPN
2N6121
2N6122
2N6123
MJE13004
MJE13005
PNP
2N6124
2N6126
2N6126
5
60
BC
100
250
TIP120
TIP126
300
350
III""
1I""b
TIP122
MJE5H
2N6497
MJE52T
2N649B
MJE53T
2N6499
TIP127
5 min
10175
5 min
40
60
80
100
TIP41
TIP41A
TIP41B
TIP41C
TIP42
TIP42A
TIP42B
TIP42C
7
30
50
70
2N6288
2N6290
2N6292
2N6111
2N6109
2N6107
8
40
60
80
100
120
150
300
400
10
60
80
12
300
400
15
40
60
BO
MJE280H
MJE3055T
2N6387
2N63B8
D44Hl0
D44Hll
10175
15175
15175
15/75
15175
30/150
30/150
30/150
MJE15029
MJE15031
lk120k
lk/l0k
lk120k
lk/l0k
lk120k
lk/l0k
lk/20k
40 min
40 min
MJE290H
MJE2955T
6/30
6/30
25/100
20/70
D45Hl0
D45Hll
lk/20k
lk120k
20 min
40 min
2N64B9
O!Nti4110
2N6491
6/30
6/30
20/150
20/150
20/150
2N6040
TIP105
2N6041
TIP106
~~~~;"
MJE13008
MJE13009
2N64B6
"Nti4ts,
2N648B
lk min
lk min
lk min
5 min
10/75
6
2N6386
2N6043
TIP100
2N6044
TIP10l
I,,:N6045
TIP102
MJE1502B
MJE15030
MJE13006
MJE13007
@ IC
hFE
MinIMax Amp
25/100
1.5
25/100
1.5
20/BO
1.5
6/30
3
6/30
3
2-11
3
;j
3
5
2.5
5
2.5
5
2.5
3
3
3
3
3
2.5
3
3
4
3
4·
3
3
3
3
3
5
5
ts
I-'s
Resistive Switching
tf
I-'s @ IC
fT
MHz
Po ICase)
Wetts
Max
0.4 typ
0.4 typ
0.4 typ
3
3
Max
0.3 typ
0.3 typ
0.3 typ
0.7
0.7
Amp
1.5
1.5
1:5
3
3
Min
2.5
2.5
2.5
4
4
@26°C
40
40
40
60
60
1.5 typ
1.5 typ
1.5 typ
2 typO
1.B
2 typ"
1.B
2 typO
I.B
1.5 typ
1.5 typ
1.5 typ
3
;j
4
2.5
2.5
2.5
2.5
2.5
2.5
4#
4#
4#
2.5
5
2.5
5
2.5
5
65
65
75
BO
BO
BO
BO
BO
80
typ
typ
typ
typ
3
3
3
3
3
3
3
3
65
65
65
65
0.15 typ
0.15 typ
0.15 typ
3
3
3
4
4
4
40
40
40
20#
4#
4#
4#
4#
4#
4#
30
30
4
4
65
75
80
75
80
75
80
50
50
80
80
20#
20#
50 typ
50 typ
75
75
65
65
50
50
0.4
0.4
0.4
0.4
typ
typ
typ
typ
0.4 typ
0.4 typ
0.4 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5!yp
3
3
O.B
O.B
0.8
0.15
0.15
0.15
0.15
1.5
1.5
1.5
1.5
1.5
1.5
!yp
typ
typ
!yp
typ
typ
0.7
0.7
3
3
3
3
3
3
5
5
3
4
5
5
4
4
B
8
3
3
0.7
0.7
8
8
4
4
100
100
5
5
5
0.6 typ
0.6 typ
0.6 typ
0.3 typo
0.3 typ
0.3 !YP
5
5
5
5
5
5
75
5
75
Motorola Power Darlingtons
Power Darlingtons provide' high gain, high input impedance and reduced component count, with subsequent space savings. Devices are listed in ascending order of maximum continuous collector current, IC
Cont,and open base sustaining-voltage, VCEO (sus),
Complementary types are grouped together.
•
ICCont
Amps
Max
0.5
2
VCEO(sus)
' Volts
Min
30
Device Type
PNP
NPN
D40CI
D40C2
hFE
MiniMax
IOk/60k
40k min
4u
~:~~;
~~~~~~
~:~
30
D40KI
D40K3
2N6548
2N6549'
MPS-U45
D40K2
D40K4
TlPllO
TIPlll
TlP1l2
MJE3300
2N6037
MJE3301
MJE800
2N6038
2N6294
MJE3302
2N6039
2N6295
TlP120
TlP121
TIP122
MJ3041
MJ3042
2N6386 '
MJluuu
TlPlOO
2N6043
2N6300
2N6055
MJE6043
MJlOOI
TIPIOI
2N6044
2N6301
2N6056
MJE6044
MJE6045
TlPl02
2N6045
MJlOOll
2N6383
MJ3000
2N6387
2N6384
MJ3001
2N6388
2N6385
MJl1018
MJll020
MJll022
Ik min
lk min
5k min
3k min
4k min
Ik min
Ik min
Ik min
lk min
Ik min
Ik min
750/lk
Ik min
750 min
7501l8k
7501l8k
Ik min
1.5
1.0
I
I
. I
1.5
1.0
I
I
I
I
2
I
1.5
2
2
I
2
2
3
3
3
2.S
2.5
3
3
3
4
4
4
4
3
3
4
4
4
4
4
3
4
4
5
5
5
5
5
5
5
10
10
10
40
50
. 4
60
80
100
40
60
80
S
7
8
60
80
100
300
350
40
60
80
100
10
1400'
40
60
80
150
200
250
'VCEX
D41Kl
D41K3
MPS-U95
D41K2
D41K4
TIP 115
TlP1l6
TlPll7
MJE3310
2N6034
MJE3311
MJE700
2N6035
2N6296
Mmat2
2N6036
2N6297
TIP125
TlP126
TlP127
MJ90u
TlPlOS
2N6040
2N6298
2N6053
MJE6040
MJ901
TlPl06
2N6041
2N6299
2N6054
MJE6041
MJE6042
TlPl07
2N6042
MJ2500
MJ2501
MJl1017
MJl1019
MJll021
750/18k
7501l8k
Ik min
lk min
lk min
250 min
250 min
lk120k
lk min
lk120k
Ik/IOk
750/18k
750/18k
Ik120k
Ik.mln
Ik120k
lk/IOk
7501l8k
750/18k
Ik120k
Ik120k
Ik120k
Ik/iOk
20 min
Ik/20k
Ik min
Ik120k
Ik120k
Ik min
Ik120k
Ik120k
100 min
100 min
100 min
@
IC
Amp
0.2
0.2
ts
Resistive Switching
tf
p.s
p.s_
Max
0.35 typ
0.35 typ
0.3~ typ
0,35 typ
Max
0.8 typ
0.8 typ
0.8 typ
0.8 typ
@
IC
Amp
I
I
I
I
2 tVD
2 typ
2 typ
I tVD
I typ
Ilyp
I
1.7 typ
1.'2 typ
2
1.7 typ
0.91vD
1.21yp
0.7 tVD
2
2
1.7 typ
0.9 typ
1.5 tyO
1.5 tVD
1.5 typ
1.2 typ
0.7 typ
1.5 tyO
1.51vD
1.5 typ
2
2
3
3
3
1.51yp
1.5 typ
1.51yp
1.5 typ
1.5 typ_
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.51yp
3
3
4
4
4
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 typ
1.5 tVD
1.51yp
1.5 typ
1.5 typ
1.5 typ
1.5 tyo
I.~ Iyp
1.5 typ
1.5 tyO
I
3
3
4
4
4
4
3
3
4
I
Po (Case)
I MHz ' Watts
Min
@ 25°C
75 typ
10
75 typ
6.25
75 typ
10
75 typ
6.25
75 typ
10
751vD
10
100
10
lOa
10
lOa
10
75 typ
10
75 typ
10
25
50
25
50
25
50
20
15
25
40
20
15
I
40
25
40
4
50
20
15
.25
40
4
50
4
65
4
65
65
.4
100
100
20
65
90
4
80
75
4
4
75
4
100
; 75
2
:,90
:, 80
4
: 75
4
4'
:.75
4 , .. 100
75
2
- . 75
2
4
80
75 -"
4
80
20,
100
150
20
65
2a
lOa
150 '
20, .
65 '
20'
100
200
200
200
I hie I
@
"
Case
JEDEC/MOT
TO·202/306
TO·2021306
TO·202/306
~~:~~~~~~~
/152
TO-202l306
TO·2201221A
TO·2201221A
TO-2201221A
TO·126177R
TO·l26/77
TO·126177R
TO· I26177
TO· I26177
TO·66/80
TO·126/77R
TO· I26177
TO·66/80
TO·2201221A
TO·2201221A
TO·220/221A
TO·3/ll
TO-3/ll
TO·2201221A
TO·3/11
TO·2201221A
TO·2201221A
TO·66/80
TO-31l1
TO· 127190
TO·3/11,
TO-2201221A
TO·2201221A
TO·66/80
: TO-3/11
TO· 127190
TO· 127190
TO-220/22IA
TO-220/22IA
,TO·31ll
TO·3/11
TO-3/11
TO·220122IA
TO·3111
TO·3/11
TO-220122IA
TO·3111
·3/11
TO·3/ll
TO·31ll
(continued)
2-12
Motorola Power Darlingtons (continued)
ICCont
Amps
Max
10
(cont'd)
12
15
16
20
30
50
VCEO('sus)
Device Type
Volts
Min
NPN
PNP
350
MJlOO02
MJlOO06
400
MJlOO03
MJlOO07
MJIOOl2
2N6057
2N6050
60
80
2N6058
2N6051
100
2N6059
2N6052
60
2N6576
90
2N6577
120
2N6578
550
I MJlOOl3
600
MJlOO14
60
MJ4033
MJ4030
80
MJ4034
MJ4031
100
MJ4035
MJ4032
2N6282
2N6285
60
80
2N6283
2N6286
100
2N6284
2N6287
350
MJlOOOO
MJlOO04
MJlOOOI
400
MJlOO05
MJlOO08
450
500
MJlOO09
MJllOl2
MJllOll
60
90
MJl1014
MJl1013
MJl1015
120
MJllOl6
MJll028
MJll029
60
90
MJll030
MJll031
LMJllu,2
MJll033
120
I MJ 10015
400
500
MJlOO16
Resistive Switching
tf
ts
I hfe , Po (Case)
Watts
IlS
(aJ IC
Il S
(q' I MHz
@ 25°C
Amp
Max
Max
Min
2.5
10
150
I
5
1.5
0.5
5
10
ISO
2.5
10
I
5
ISO
1.5
0.5
5
10
ISO
IS
IS
6
175
1.6 tyO
1.5 tyO
4
6
ISO
1.5 typ
1.6 t
6
4
150
4
1.6 typ
1.5 typ
6
ISO
2
7
10
101200
120
2
7
10
101200
120
101200
2
7
10
120
2.5
O.B
10
175
O.B
175
2.5
10
150
ISO
150
2.5 typ
2.5 typ
4
160
10
2.5 tyO
2.5 tyO
10
4
160
2.5 tyO
2.5 tyO
4
160
10
10
175
3
I.B
10
1.5
0.5
10
175
10
175
3
I.B
10
1.5
0.5
10
175
0,6
8
175
2
10
2
0.6
10
B
175
4
200
4
200
4
200
300
300
300
0.5
250
2.5
20
10
10
2.5
0.5
20
250
@ IC
hFE
Min/Max Amp
30/300
5
30/300
5
30/300
5
30/300
5
100/2k
6
750/18k
6
750/18k
6
750/18k
6
2k120k
4
2k120k
4
2k120k
4
101250
10
101250
10
Ik min
10
Ik min
10
Ik min
10
750/18k
10
750118k
10
750/18k
10
40/400
10
40/400
10
40/400
10
40/400
10
301300
10
10
30/300
Ik min
20
Ik min
20
Ik min
20
400 min
50
400 min
50
50
400 min
40
10 min
10 min
40
Case
JEDEC/MOT
TO·31ll
TO-3/ll
TO·31ll
TO-3/ll
TO·31ll
TO-3/ll
TO-31ll
TO-31ll
TO·3111
TO-31ll
TO·3/ll
TO-3/ll
TO-3/ll
TO·3111
TO·3111
TO-3/11
TO-31ll
TO-3/11
TO-31ll
TO-31ll
TO-31ll
TO-31ll
TO-31ll
TO- /11
TO-3/11
TO-3/ll
TO-3/ll .
TO-3/ll
TO·3 Mod/197
TO-3 Mod/197
TO-3 Modll97
TO-3 Modl197
TO-3 Modll97
II
\
Power Switching Transistors
BVCEO <200 v
. (See next page for 200 Volts and greater.)
ICCont
Amps
Max
1
VCEO(SUS)
Volts
Min
40
50
1.5
2
3
65
40
50
60
75
40
60
120
150
40
Device Type
NPN
PNP
2N3244
2N3467
2N3245
2N3468
MM4036
...
2N3762
2N3734
2N3763 .
2N3735
2N5859
2N5861
2N5050
2N5051
2N3719
2N3867
2N3720
60
2N3506
2N3868
2N6303
80
2N3507
hFE @ IC
Min/Max Amp
50/150
0.5
401120
0.5
0.5
30/90
40/120
0.5
20/40
0.5
I
301120
301120
I
20/80
I
I
20/BO
30/120
0.5
25/100
0.5
25/100
0.75
251100
0.75
25/180
2
40/200
2
25/180
2
401200
1.5
30/150
2
2
~01l50
301150
1.5
Resistive Switching
tf
ts
Il S
Il S @ IC
Amp
Max
Max
0.14
0.045
0.5
0.06
0.03
0.5
0,045
0.12
0.5
0.06
0.03
0.5
0.175'
0.15
0.035
0.08
I
0.03
0.03
I
0.08
0.035
I
0.03
0.03
I
0.035
0.035
0.1
0.035
0.035
0.1
3.5
1.2
0.75
3.5
1.2
0.75
004'
I
0.4"
I
004"
I
0.055
0.035
15
0.4'
I
0.4'
1
0.055
0.035
1.5
fT
MHz
Min
175
, 175
ISO
175
60
180
250
150
250
250
200
10
10
60
60
66'
60
60
60
60
Po (Case)
Watts
@WC
5
5
5
5
7
4
4
4
4
5
5
40
40
6
6
6
5
6
6
5
Case
JEDEC/MOT
TO-39179
TO-39179
TO-39179
TO-39179
TO·39179
TO-39179
TO-39179
TO-39179
TO-39179
TO·39179
TO·39179
TO·66IBO
TO·66/80
TO-5/31
TO-5/31
TO-5131
TO-39/79
TO-5/31
TO-5/31
TO-39179
(continued)
2-13
Power Switching Transistors (continued)
leeont
Amps
Max
4
5
•
7
VeEO(sus)
Volts
Min
60
60
80
100
60
80
100
7,5
10
15
20
25
60
80
60
80
60
80
75
80
90
60
80
100
120
30
50
140
150
40
60
80
100
120
140
150
Device Type
NPN
PNP
2N4877
MJ8100
2N53;
2N6191
2N5339
2N6193
2N6315 . 2N6317
2N5428
2N5347
2N6187
2N6316
2N6318
2N5430
2N5349
2N6189
2N3447
2N3448
MJ6700
2N5877
2N5875
2N5878
2N5876
2N5881
2N5879
2N5882
2N5880
2N5039
2N5303
2N5745
2N5038
2N5885
2N5883
2N5886
2N5884
2N6436
2N6338
2N6437
2N6339
. 2N6438
2N6340
2N6341
2N5301
2N4398
2N5302
2N4399
2N6377
2N6274
2N6378
2N6275
2N6379
2N6276
2N6277
hfE
MiniMax
201100
25/180
6U/24
601240
20/100
601240
601240
20/100
601240
601240
40/120
40/120
25/180
20/100
201100
201100
20/100
20/100
15/60
201100
20/100
20/100
20/80
30/120
20/80
30/120
20/80
30/120
30/120
15/60
15/60
301120
30/120
30/120
30/120
30/120
@'
IC
Amp
4
2
2
2
2,5
2
2
2,5
2
·2
5
5
2
4
4
6
6
10
10
12
10
10
10
10
10
10
10
10
10
15
15
20
20
20
20
20
Resistive SWitching
tf
ts
J.ls (a Ie
J.lS
Amp
Max
Max
1.5
0.5
4
0,15
1
2
.2
2
2
2
0.2
2
0,8
1
2.5
0.2
2
2
2
0.2
2
0.8
2.5
1
0,2
2
2
2
0.2
2
0,35
2
5
2
0.35
5
0.15
2
I
0,8
I
4
0.8
I
4
I
0.8
6
0,8
I
6
0.5
1.5
10
2
1
10
1.5
0.5
12
I
0.8
10
I
0.8
10
0.25
I
10
I
0.25
10
0,25
I
10
I
0.25
10
0,25
I
10
1
0.25
10
0,25
I
10
2
1
10
2
1
10
0,8
0,8
0.25
20
0,8
0.25
20
0,8
0.25
20
0,8
0.25
20
. fT
MHz
Min
30
30
30
30
4
30
30
4
30
30
10
10
30
4
4
4
4
60
2
60
4
4,
40
40
40
40
40
40
40
2
2
Po (Case)
Watts
@ 25"C
10
10
10
10
90
. 60
60
90
60
60
115
115
60
150
15
160
160
140
200
140
200
200
200
200
200
200
200
200
200
200
200
30
30
30
30
Case
JEDECI MOT
TO·39179
TO·39179
TO·39179
TO·39179
10·66/80
TO·66/80
10·591160
TO·66/80
10·66/80
TO·59/160
TO·3/11
TO·31l1
TO·59/160
10·3/11
TO·3111
10·3/11
TO·31l1
TO· 3111
TO·3/11
TO·31l1
10·31ll
TO·31l1
TO·31l1
TO·31l1
TO·3/11
TO·31ll
TO· 311 I
TO·3/11
TO·3/11
TO·31ll
TO·3111
TO·3 Mod/197
250
TO·3 Modll97
250 .• , TO·3 Mod/197
250
TO·3 Mod/197
250·,-- TO·3 Mod/197
Motorola SWITCHMODE Power Transistors
BVCEO >200
v
SWITCHMODE power transistors are useful for "off line" converters, switching regulators, deflection circuits,
solenoid drivers, and'motor control. SWITCHMODE devices, both regular transistor structur~s and Darlingtons
with and without "speed·up" diodes, are completely characterized in a Designers Data Sheet !o.rmat. This format
includes switching information at 250 C and lOOoC for both resistive and inductive loads, as. well as clamped in·
ductive reverse·bias SOA.
Other power switching devices with BVCEO :>200 V, but without the SWITCHMODE ,label or Designers Data
Sheet, are included in this table.
Devices are listed in descending order of VCEO (sus). IC Cont, and VCEX'
Case
Designers Data Sheet characterization
"Darlington
2-14
""Darlington with speed,~pdlode
(continued)
Motorola Switchmode Power Transistors (continued)
VCEO (sus)
Volts
Min
IC Cont
Amps
Max
VCEX
Volts
Min
Device Type
NPN unless
otherwise noted
hFE @ IC
Amp
Min/Max
550
500
IS
50
20
MJlOOI3##
MJlOOI6##
MJlOO09##
MJl3335
MJIOO08##
MJ13334
MJlOOI5##
MJIOOOI#
MJlOO05##
MJl3333
2N6547
MJ EI3009
MJ10012#
MJlOO03#
MHOO07##
MJl3015
2N6545
MJEl3007
2N6543
MJEI3005
MJEl3003
MJ4647 - PNP
MJlOOOO#
MJlOO04##
MJl3332
2N6251
MJIOO02#
MJIOO06##
MJl3014
2N6308
2N6499
2N5840
2N6213·PNP
MJ3030
2N6235
2N6546
MJEl3008
2N6544
2N6307
MJEl3006
2N6542
2N6498
MJEI3004
2N3585
2N6422·PNP
2N6212·PNP
MJEl3002
2N5345· PNP
MJ4646 - PNP
2N6250
2N6077
2N6234
2N5839
MJl3331
2N6306
2N6078
MJ3029
2N6497
2N5838
2N3584
2N6421·PNP
2N5344·PNP
2N6211
MJl3330
2N6249
2N5052
MJ4645·PNP
101250
10 min
30/300
10/60
30/300
10/60
10 min
40/400
40/400
10/60
6/30
6/30
10012k
30/300
30/300
8/20
7/35
6/30
7/35
6/30
5/25
20 min
40/400
40/400
10/60
6/50
30/300
30/300
8120
12160
10175
10/50
10/100
3.75 min
25/125
6/30
6/30
7/35
15175
6/30
7/35
10175
6/30
25/100
251100
10/100
5/25
25/100
20 min
8/50
12170
251125
10/50
B/40
15175
12170
30 min
10175
10/50
251100
251100
25/100
10/100
BI40
10/50
251100
20 min
450
20
400
50
20
650
750
750
600
650
550
650
500
15
12
10
10
850
700
550
-500
10
8
450
850
700
850
700
700
400
450
350
5
4
1.5
0.5
20
15
375
450
10
325
300
10
8
5
3
2
5
15 .. 12
8 .. 5
4
2
...
400
700
450
375
400
700
350
650
600
650
600
650
400
600
500
350
600
300
300
275
300
300
275
300
250
350
500
275
500
350'
3
275
2
375
375 .
I
250
225
275
2
200
20
300
15
225
2
200
0.5
200
DeSigners Data Sheet charactematlOn
#Darllngton
##Darllngton with speed-up diode
1.5
I
0.5
15
7
5
3
20
8
7
!>
ts
10
40
10
5
10
5
40
10
10
5
10
8
6
5
5
5
5
5
3
3
I
0.5
10
10
5
10
5
5
5
3
2.5
2
I
3
I
10
B
5
3
5
3
2.5
3
I
I
I
I
0.5
0.5
10
1.2
I
2
10
3
1.2
0.4
2.5
2
I
I
0.5
I
10
10
0.75
0.5
2-1/5
Resistive Switchi~
tF
JlS
JlS
Max
Max
2.5
2.5
2
4
2
4
2.5
3
1.5
4
4
3
6
2.5
1.1
2
4
3
4
3
4 ,
0.72'
3
1.5
4
3.5
2.5
1.5
2
1.6
1.8
3
2_5
0.8
1.0
0.6
0.7
0.6
0.7
1.0
I.S
0.5
0.7
0.7
0.7
15
I
0.25
0.5
I
07
0.8
0.7
0.7
3.5
4
3
4
1.6
3
4
IB
3
4
4
2.5
4
0.6
0.72'
35
2.B
3.5
3.75
3.5
1.6
2.B
I.B
3
4
4
0.6
2.5
3.5
3.5
35
0.72'
18
0.5
0.7
I
I
0.5
0.5
0.4
0.8
1.5
0.6
I
0.5
0.7
0.7
I
0.4
0.7
O.B
O.B
0.7
3
3
0.6
07
0.1
I
0.3
0.5
1.5
0.7
0.4
0.3
I
O.B
1.5
3
3
0.1
0.6
07
I
12
@
IC
Amp
10
20
10
10
10
10
20
10
·10
10
10
8
15
5
5
5
5
5
3
3
I
0.05
10
10
'T
MHz
Min
8"
S'·
10"
10"
6 to 24
4"
6
10*'
10"
6
4
6
4
5
40
10*'
10"
10
10
5
5
5
5
2.5
2
I
3
2.5
10"
10"
I
20
6 to 24
4"
6
5
4
6
5
4
10
10
4
5
60
40
2.5
7
20
5
5/40
5
7
10
B
5
3
5
3
2.5
3
I
I
I
I
0.5
0.05
10
1.2
I
2
10
3
1.2
3
25
3
I
I
0.5
I
10
10
0.75
0.05
5
5
5
4
5
5
10
10
60
20
5/40
25
10
40
Case
JEDEC/MOT
TO-3/ll
TO-3 Mod/l97
TO-3/ll
TO-3/11
TO-3111
TO-3/11
TO-3 Mod/197
TO-3/ll
TO-3/ll
TO-3/ll
TO-31ll
TO-220/221A
TO-3/ll
TO-31l1
TO-3/11
TO-31ll
TO-3/ll
TO-220/221A
TO-31ll
TO-220/221A
TO·126/77R
TO-39179
TO-3Ill
TO-3/11
TO-3111
TO-3/ll
TO-3/ll
TO-31ll
TO-3/ll
TO-3/11
TO-2201221A
TO-3/11
TO-66/80
TO-3/11
TO-66/80
TO-3/ll
TO-2201221A
TO-3/11
TO-3/ll
TO-2201221A
TO-31ll
TO-220/221A
TO-2201221A
TO-66/BO
TO-66/BO
TO-66/BO
TO-126/77R
TO-66/BO
TO-39179
TO-3/ll
TO-66/BO
TO-66/BO
TO-3/11
TO-31ll
TO-31ll
TO-66/BO
TO-31ll
TO-220/221A
TO-3/11
TO-66/BO
TO-66/BO
TO-66/BO
TO-66/BO
TO-31ll
TO-31ll
TO-66/BO
TO-39179
•
Military Specified Power Transistors
Oevices listed are active, per QPL-19500 (Qualified Product List) as of June I, 1978,
with the exception of those devices marked *** which should be active by September,
1978. Check your local Motorola sales office or franchised distributor for current qualification status and availability of these devices or additions.
•
ICCont VCEO(sus)
Amps
Volts
Max
Min
O.S
200
Device lype
NPN I #
2S0
I
40
SO
80
300
1.5
2N3019J.1391
IX
2N3739J.l402A
IX
40
2N3762J.l396
IX lXV
2N3763J.l396
IX lXV
60
7S
3
40
60
4
PNP I #
2N4930J.l397
lX,TXV
2N4931J.l397
lX.lXV
2N3467J.l348
IX lXV
2N3468J.l348
lX.TXV
2N373SJ.l39S
lX,TXV
2N3506J.l349
lXTXV
2N3507J.1349
lX.lXV
60
10
60
80
12
80
100
IS
300
400
20
80
2N6283J/S04
100
25
100
IX lXV
2N6284J.l504
lX.lXV·"
2N6338J/S09
IX lXV'"
ISO
# MI~S-19500 Detailed
Spec. shown by
Device Type
2N634IJ.lS09
TX. TXV'"
20
5
TO·39179
401120
0.5
0.06
0.03
0.5
175
5
TO·39179
40/120
0.5
0.06
0.03
50 min
0.5
0.5
175
5
TO·39179
100
5
TO·39179
401200
OJ
3 typ
0.3 typ
OJ
10
20
TO·66/S0
301120
1
O.OS
0.035
1
ISO
4
TO-39179
1
O.OS
0.035
1
150
4
TO·39179
1
0.03
0.03
1
250
4
TO·39179
2N3867J.l350A
TX lXV
2N3868J.l350A
lX,TXV
401200
2
OA-
1
60
6
TO·5/31-·
301150
2
OA-
1
60·
6
TO·5/31··
2N3740J.l441A
TX,TXV
30/100
0.25
1.3 typ 0.27 typ
0.25
4
25 .
TO·66/S0
40/160
0.5
0.9 typ 0.09 typ
0.5
10
20
TO·66/S0
30/100
0.25
1.3 typ 0.27 typ 0.25
4
25
TO·66/S0
40/160
0.5
0.9 typ 0.09 typ
0.5
10
20
TO·66/S0
30 min
3
0.3 typ
0.4 typ
5
4
150
TO·3111
30 min
3
0.3 typ
0.4 typ
5
4
150
TO·3111
750/1Sk
6
1.6 typ
1.5 typ
6
4##'"
150
TO·3111
750/1Sk
6
1.6 typ
1.5 typ
6
4##'.
150
TO·3111
6/30
10
4
0.7
10
6·24
175'
TO·3111
6/30
10
4
0.7
10
.6·24
175
.TO·3/11
15/60
10
2
1
10
2
200
TO·3 Mod/12
750llSk
10
2.5 typ
2.5 typ
10
4##
160
TO·3
750/1Sk
10
2.5 typ
2.5 typ
10
4##
160
TO·3 Mod/12
30/120
10
1
0.25
10
40
200
TO·3 Modll2
20/S0
10
1
0.25
10
40
200
TO·3 Modll2
20/80
10
1
0.25
10
40
200
TO.. 3 Mod/12
30/120
10
1
0.25
10
40
200
TO·3 Modll2
2N3791J.l3798
IX TXV
2N3792J.l3798
lX,TXV
2N605IJ.lSOl
IX lXV
2N6052J.lSOI
lX.lXV·"
2NS74SJ.l433
TX lXV
2N6286J/SOS
IX lXV
2N6287J.lSOS
lX.lXV·"
2N6437J.lS08
TX lXV'"
2N6438J.lS08
TX TXV'"
120
0.03
PD(Case
Watts
Case
@ WC JEDEC/MOI
10·39179
5
20/S0
2N374IJ.l441A
TX TXV
2N3776J/518
lX.lXV·"
2N3715J.l4088
IX lXV
2N3716J.l4088
lX,TXV
2N60S8J.lS02
IX lXV
2N60S9J.lS02
lX.lXV
2N6S46J.l525
IX lXV'"
2N6S47J.lS25
lX.lXV·"
2NS303J.l456A
IX
20 min
fl
MHz
Min
20
20/S0
2N3766J.1S18
IX lXV'"
80
hFE @ IC
Amp
MiniMax
0.05
20 min
Resistive Switching
tf
ts
).IS
).IS @ Ie
Amp
Max
Max
.,
•• 2N3506 and 2N3507 are TO·39
2-16
.-. Should be active by September 1978.
Military Specified Power Transistors (continued)
Device Type
Max
Min
30
60
2N5302J,I456A
TX
50
60
2N5685J.l464
TX TXV
2N5686J.l464'
TX.TXV
2N6274J,I514
TX TXV'"
80
100
Resistive Switching
Is
If
p.s
p.s @ IC
Amp
Max
Max
-
ICCont VCEO(sus)
Amps
Volts
NPN I #
120
PNP I #
2N4399J,I433
TX,TXV
2N5683J,/466
TX TXV
2N5684J,I466
TX TXV
2N6378J,I515
TX TXV'"
2N6379J/515
TX, TXV'"
2N6277J,I514
TX, TXV'"
# Mil S19500 Detailed
Spec. shown by
Device Type
150
hFE @ .I C
Amp
MiniMax
15/60
15
fT
MHz
Min
PD(Case
Watts
Case
@ 25°C JEDEC/MOT
2
1
10
2
200
TO·3 Madll2
25
0.5 typ
0.3 typ
25
2
300
TO·3Mad1l97
15/60
25
0.5 typ
OJ typ
25
2
300
0·3 Modll97
30/120
20
0.8
0.25
20
30
250
0·3 Modll97
30/120
20
0.8
0.25
20
30
250
0·3 Mod/197
301120
20
0.8
0.25
20
30
250
0·3 Modll97
15/60
.,*<, Should be active by September 1978.
Secondary Motorola Power Transistors
(These are available from Motorola but may not be performance/cost effective for new designs)
Device Type
2N3445
2N3446
2N3740A
2N3741A
2N4240
2N4901
2N4902
2N4903
2N4904
Polarity
NPN
NPN
PNP
PNP
NPN
PNP
PNP
PNP
PNP
2N4905
2N4906
2N4913
2N4914
2N4915
2N5067
2N5068
2N5069
2N5241
PNP
PNP
NPN
NPN
NPN
NPN
NPN
NPN
NPN
2N5336
2N5338
2N5346
2N5348
2N5427
2N5429
2N6186
2N6188
2N6190
2N6192
2N6423
BU108
MJ205
MJ804
MJ1800
MJ2252
MJ3040
MJ3771
MJ3772
MJ3773
MJ7160
MJ7161
NPN
NPN
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
NPN I
NPN .
NPN ,
NPN
NPN
NPN
NPN
VCEO(sus)
Volts
60
80
60
80
300
40
60
80
40
60
80
40
60
80
40
60,'
80
325
80
100
80
100
80
100
80
100
80
100
300
1500'
1400'
1400'
250
300
300
40
60
1140
'350
400
IC
Amps
Max
7.5
7.5
4
4
2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
7
7
7
10
10
5
5
2
5
2.5
5
5
0.5
7
30
20
16
8
8
hFE
MiniMax
20/60
20/60
30/100
30/100
30/150
20/80
20/80
20/80
251100
251100
25/100
251100
25/100
25/100
20/80
20/80
20/80
15/35
301120
301120
30/120
301120
30/120
301120
301120
301120
30/120
30/120
30/150
2.25 min
2 min
2.2 min
401120
25/200
100 min
15/60
15/60
15/60
251125
25/125
IC
@Amp
3
3
0.25
0.25
1
1
1
1
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
2.5
2
2
2
2
2
2
2
2
2
2
0.75
4.5
2.5
3.5
0.4
0.05
2.5
15
10
8
3
3
Suggested Replacement for New Designs
IT
MHz
Min
10
10
4
4
30
4
4
4
4
4
4
4
4
4
4
4
4
2.5
30
30
30
30
30
30
30
30
30
30
15
2
2
1
30
30
Case
TO·3
TO-3
TO·66
TO·66
TO·66
TO·3
TO·3
TO·3
TO·3
TO·3
TO·3
TO·3
TO·3
TO·3
TO·3
TO-3
TO·3
TO·3
TO-39
TO·39
TO·59
TO·59
TO·_66
TO·66
TO·59
TO·59
TO·39
TO·39
TO·3
TO·3
TO·3
TO·3
TO·3
TO·39
TO·3
TO·3
TO·3
TO·3
TO·3
TO·3
Device
2N3447
2N3448
2N3740
2N3741
2N3585
2N6312
2N6313
2N6314
2N6317
2N6317
2N6318
2N6315
2N6315
2N6316
2N4231A
2N4232A
2N4233A
2N3902
2N5337
2N5339
2N5347
2N5349
2N5428
2N5430
2N6187
2N6189
2N6191
2N6193
2'N6422
BU208
BU205
MJ12004
MJ3029
2N3739
MJ3041
2N3771
2N3772
2N3773
2N6544
2N6545
Metal
Case
TO·3
TO·3
TO·66
TO·66
TO·66
TO·66
TO-66
TO:66
TO·66
TO·66
TO·66
TO·66
TO-66
TO·66
TO·66
TO·66
TO·66
TO·3
TO·39
TO·39
TO·59
TO·59
TO·3
TO·3
TO·59
TO-59
TO-39
TO·39
TO·3
TO·3
TO-3
TO-3
TO·3
TO·39
TO·3
TO-3
TO·3
TO·3
TO·3
TO·3
Device
Plastic
Case
TIP30A
T1P30B
TO·220
TO·220
TIP32
TIP32A
TIP32B
2N6109
2N6107
TIP42B
2N6290
2N6292
TIP41B
TIP31
T1P31A
T1P31B
MJE13004
TO-220
TO·220
TO-220
TO·220
TO·220
TO·220
TO·220
TO-220
TO-220
TO-220
TO·220
TO·220
TO·220
MJE340
TO·126
MJE13006
MJE13007
TO·220
TO·220
(continued)
2-17
•
Secondary Motorola Power Transistors (continued)
Device Type
•
Polarity
IC
Amps
hFE
Max
MiniMax
700'
40
60
80
100
40
60
80
100
10
3
-3
3
3
3
3
3
3
3.75 mm
25 min
25 mm
25 min
25 mm
25 min
25 min
25 min
25 min
4
4
4
4
4
4
4
4
4
'4
401200
40/150
25 mm
VCEO(sus)
Volts
MJ9000
MJE31
MJE31A
MJE31B
MJE31C
MJE32
MJE32A
MJE32B
MJE32C
MJE220
MJE221
MJE222
MJE223
MJE224
MJE225
MJE230
MJE231
MJE232
MJE233
MJE234
MJE235
MJE240
MJE241
MJE242
MJE244
MJE250
MJE251
MJE252
MJE254
MJE371
MJE521
MJE701
MJE702
MJE703
MJE710
MJE711
MJE712
MJE720
MJE721
NPN
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
60
60
60
80
80
80
60
60
60
80
80
80
80
80
80
100
80
80
80
100
40
40
60
80
.80
40
60
80
40
60
MJE722
MJE801
MJE802
MJE803
MJEl090
MJEl091
MJEl092
MJEl093
MJEllOO
MJEllOI
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
NPN
NPN
80
60
80
80
60
·60
80
80
60
60
MJEll02
MJEll03
MJE2801
MJE2901
SE9300
SE9301
SE9302
SE9400
SE9401
SE9402
NPN
NPN
NPN
PNP
NPN
NPN
NPN
PNP
PNP
PNP
80
80
60
60
60
80
100
60
80
100
4
4
4
4
4
4
4
4
I
4
4
4
4
4
4
1.5
1.5
1.5
1.5
1.5
1.5
4
4
4
5
5
5
5
401200
40/150
25 mm
401200
40/150
25 min
401200
40/150
25 min
401200
40/120
25 min
25 min
40/200
40/120
25 min
25 min
40 min
40 min
750 min
750 min
750 min
20 min
20 min
20 min
20 min
20 min
5
20 mm
750 min
750 min
750 min
750 min
750 min
750 min
750 min
750 min
750 min
0.5
2
1.5
2
3
4
3
4
3
4
5
5
10
10
10
10
10
10
\0
\0
750 mm
750 mm
25/100
25/100
100 mm
100 mm
100 mm
100 min
100 mm
100 mm
3
4
3
3
7.5
7.5
7.5
7.5
7.5
7.5
5
Min
6
I
I
1
I
1
I
I
I
0.2
0_2
0_2
0_2
0_2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
I
I
2
1.5
2
0.5
0.5
0.5
0.5
0.5
Suggested Replacement for New Designs
fT
MHz
IC
@Amp
3
3
3
3
3
3
3
3
50
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
40
40
40
40
1#
1#
1#
-
2-18
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
1#
Case
Device
TO-3
TO-126R
TO-126R
TO-126R
TO-126R
TO:126R
TO-126R
TO-126R
TO-126R
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-l26
TO-126
TO-l26
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
'TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
MJ3030
TO-126
TO-126
TO-126
TO-126
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
Metal
Case
Plastic
Case
TO-3
2N4912
TO-66
TO-66
TO-66
TO-66
TO-66
TO-66
2N6298
2N6298
2N6299
2N6299
2N6300
2N6300
TO-66
TO-66
TO-66
TO-66
TO-66
TO-66
2N6301
2N6301
2N3055
MJ2955
TO-66
TO-66
TO-3
TO-3
2N4898
2N4899
2N4900
2N3054
2N3054
Device
TlP31
TIP31A
TIP31B
TIP31C
TIP32
TlP32A
TlP328 TlP32C
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
MJEl81
MJEl81
MJE181
MJEl82
MJEl82
MJE182
MJEl7l
MJE171
MJE171
MJE172
MJE172
MJEl72
MJEl82
MJEl82
MJEl82
MJE243
MJE172
MJE172
MJEl72
MJE253
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-l26
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-127
TO-I27
. TO-127
TO-127
TO-220
TO-220
TO-220
TO-220
TO-220
to-220
2N5193
2N5190
2N6035
2N6036
2N6036
2N4918
2N4919
2N4920
2N4921
2N4922
2N4923
2N6038
2N6039
2N6039
MJE6040
MJE6040
MJE6041
MJE6041
MJE6043
MJE6043
MJE6044
MJE6044
MJE3055
MJE2955
2N6043
2N6044
2N6045
2N6040
2N6041
2N6042
power Transistor Cross Reference
3-1
•
3-2
POWER TRANSISTOR
CROSS REFERENCE
Devices are not shown in the following list if the Motorola number is identical. Refer to Chapter 1,
the Alphanumeric Index, for the location of specifications.
PART NO.
2N1483
2N1484
2N1485
2N1486
2N1487
2N1488
2N1489
2N1490
2N2987
2N2988
2N2989
2N2990
2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055H
2N3055SD
2N3055UB
2N3076
2N3079
2N3080
2N3171
2N3172
2N3173
2N3174
2N3183
2N3184
2N3185
2N3186
2N3195
2N3196
2N3197
2N3202
2N3198
2N3203
2N3204
2N3232
2N3233
2N3234
2N3235
2N3236
2N3237
2N3238
2N3239
2N3240
2N3418
2N3419
2N3420
2N3421
2N3660
2N3661
2N3667
2N3788
MOTOROLA
DIRECT
REPLACEMENT
MOTOROLA
SIMILAR
REPLACEMENT
TIP41
TIP41A
TIP41
TlP41A
. 2N5877
2N5878
2N5877
2N5878
2N5681
2N5681
2N5681
2N5681
2N5337
2N3789
2N3789
2N3789
2N3791
2N3791
2N3791
2N3055A
2N3055A
2N3055A
2N6249
2N5838
2N6542
2N3789
2N3789
2N3790
2N6226
2N3789
2N3789
2N3790
2N6226
2N3789
2N3789
2N3790
2N3719
2N6226
2N3720
2N6303
2N5877
2N5632
2N5760
2N3055
2N5632
2N5302
2N5882
2N5882
2N5882
2N4877
2N5336
2N4877
2N5336
2N4234
2N4235
2N5881
MJ3030
PART NO.
2N3863
2N3864
2N3865
2N3878
2N3879
2N3996
2N3997
2N4OOO
2N4001
2N4002
2N4OO3
2N4063
2N4064
2N4070
2N4071
2N4111
2N4113
2N4115
2N4116
2N4231
2N4232
2N4233
2N4296
2N4297
2N4298
2N4299
2N4300
2N4301
2N4305
2N4307
2N4309
2N4311
2N4314
2N4347
2N4348
2N4387
2N4388
2N4907
2N4908
2N4909
2N4910
2N4911
2N4998
2N4999
2N5000
2N5001
2N5002
2N5003
2N5004
2N5005
2N5034
2N5035
2N5036
2N5037
2N5038
2N5039
2N5083
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N3715
2N5632
2N5634
2N5427
2N5429
2N5347
2N5347
2N5336
2N5339
2N6274
2N6274
MJE3439
MJE3440
2N6306
2N6306
2N3715
2N3716
2N5347
2N5347
2N4231A
2N4232A
2N4233A
2N3738
2N3738
2N6235
2N6235
2N5336
2N5337
2N5337
2N5337
2N5339
2N5337
2N3868
2N5759
2N5630
2N4898
2N4898
2N3791
2N3791
2N3792
2N3054
2N3054
2N5347
2N6187
2N5347
2N6187
2N5347
2N6187
2N5347
2N6187
2N3055
2N3055
2N3055
2N3055
2N6338
2N6338
2N5347
3-3
PART NO.
2N5084
2N5085
2N5147
2N5148
2N5149
2N5150
2N5151
2N5152
2N5153
2N5154
2N5157
2N5202
2N5239
2N5240
2N5264
2N5284
2N5285
2N5286
2N5287
2N5293
2N5294
2N5295
2N5296
2N5297
2N5298
2N5326
2N5333
2N5334
2N5335
2N5384
2N5404
2N5405
2N5406
2N5407
2N5408
2N5409
2N5410
2N5411
2N5466
2N5467
2N5477
2N5478
2N5479
2N5480
2N5490
2N5491
2N5492
2N5493
2N5494
2N5495
2N5496
2N5497
2N5508
2N5539
2N5559
2N5575
2N5578
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N5347
2N5347
2N6190
2N5336
2N6190
2N5336
2N6190
2N5336
2N6191
2N5337
2N6545
2N5427
2N6306
2N6544
2N6249
2N5346
2N5347
2N6188
2N6189
2N6123
2N6123
2N6121
2N6121
2N6122
2N6122
2N5347
2N6303
2N4877
2N5336
2N6187
2N6190
2N6192
2N6191
2N6193
2N6187
2N6188
2N6187
2N6189
2N6545
2N6545
2N5347
2N5347
2N5349
2N5349
2N6290
2N6290
2N6292
2N6292
2N6290
2N6290
2N6292
2N6292
2N5428
2N6379
2N5633
2N5685
2N5685
•
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
2N5598
2N5600
2N5602
2N5604
2N5606
2N5610
2N5612
2N5614
2N5616
2N5618
2N5651
2N5660
2N5664
2N5665
2N5671
2N5672
2N5678
2N5729
2N5730
2N5733
2N5734
2N5737
2N5738
2N5739
2N5740
2N5741
2N5742
2N5743
2N5744
2N5804
2N5805
2N5867
2N5868
2N5869
2N5870
2N5871
2N5872
2N5873
2N5874
2N5929
2N5930
2N5931
2N5932
2N5933
2N5935
2N5936
2N5937
2N5954
2N5955
2N5956
2N5970
2N5971
2N5972
2N5980
2N5981
2N5982
2N5983
2N5984
2N5985
2N6021
2N6022
. 2N6023
2N6024
2N6025
2N6026
2N6032
2N6033
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N5428
2N5427
2N5428
2N5429
2N5428
2N5428
2N5430
2N3448
2N3448
2N3448
2N6235
2N6233
2N6233
2N6235
2N6338
2N6339
2N6381
2N5336
2N5347
2N6274
2N6338
2N5878
2N6229
2N5878
2N6229
2N5883
2N6029
2N5883
MJ4502
2N6306
2N6542
2N3789
2N3790
2N3713
2N3714
2N3789
2N3790
2N3713
2N3714
2N6338
2N6338
2N6341
2N6338
2N6338
2N6341
2N6338
2N6341
2N6318
2N6317
2N6317
2N5882
2N5882
MJ15003
2N6489
MJE2955
2N6491
MJE3055
MJE3055
2N6488
2N6126
2N6126
2N6124
2N6124
2N6125
2N6125
2N6275
2N6277
PART NO.
2N6079
2N6098
2N6099
2N6100
2N6101
2N6102
2N6103
2N6106
2N6108
2N6110
2N6129
2N6130
2N6131
2N6132
2N6133
2N6134
2N6175
2N6176
2N6177
2N6178
2N6179
2N6180
2N6181
2N6242
2N6243
2N6244
2N6245
2N6246
2N6247
2N6253
2N6253
2N6254
2N6258
2N6259
2N6260
2N6261
2N6262
2N6263
2N6264
2N6270
2N6271
2N6278
2N6279
2N6280
2N6281
2N6289
2N6291
2N6293
2N6302
2N6326
2N6327
2N6328
2N6329
2N6330
2N6331
2N6355
2N6356
2N6357
2N6358
2N6359
2N6360
2N6371
2N6372
2N6373
2N6374
2N6380
2N6381
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N6235
2N6487
2N6487
2N6488
2N6488
2N6486
2N6486
2N6107
2N6109
2N6111
2N6290
2N6292
TlP318
2N6109
2N6107
TIP328
2N5656
2N5656
2N5657
MJE182
MJE181
MJE172
MJE171
MJ13015
MJ13334
MJ13333
MJ13334
2N5879
2N5880
2N5877
2N3055H
2N5878
2N5686
2N5631
2N4231A
2N4233A
2N5760
2N5050
2N5051
2N6338
2N6338
2N6274
2N6275
2N6276
2N6277
2N6288
2N6290
2N6292
2N5630
2N5302
2N5886
2N6338
2N4399
2N5884
2N6436
2N6057
2N6057
2N6058
2N6058
2N5885
2N5629
2N6569
2N6316
2N6315
2N6315
2N6377
2N6378
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER'
3-4
PART NO.
2N6382
2N6406
2N6407
2N6408
2N6409
2N6410
2N6411
2N6412
2N6413
2N6414
2N6415
2N6416
2N6417
2N6418
2N6419
2N6465
2N6467
2N6468
2N6469
2N6470
2N6471
2N6472
2N6473
2N6475
2N6492
2N6493
2N6494
2N6496
2N6500
2N6510
2N6511
2N6512
2N6513
2N6514
2N6530
2N6531
2N6532
2N6534
2N6535
2N6536
2N6537
2N6573
2N6574
2N6575
2N6579
2N6580
2N6581
2N6582
2N6583
2N6584
2N6648
2N6649
2N6650
2N6653
2N6654
2N6655
2N6671
2N6672
2N6673
2N6674
2N6675
2N6676
2N6677
2N6678
2SC1306
2SC1678
2SC1816
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N6379
MJE171
MJE172
. MJE181
MJE182
MJE200
MJE210
MJE180 .
MJE181
MJE170
MJE171
MJE241
MJE243
MJE251
MJE253
TIP41C
.2N6420
2N6420
2N5879
2N5881
2N5881
2N5882
TlP31C
TIP32C
2N6055
2N6056
2N6056
2N6339
2N5429
2N6306
2N6306
2N6544
2N6545
2N6544
TIP10l
TIP102
TIP103
2N6577
2N6578
2N6578
2N6578
2N6546
2N6546
2N6547
MJ13014
MJ13015
MJ13334
2N6308
2N6545
MJ13334
MJ2500
MJ2500
MJ2501
MJ13332
MJ13332
MJ13333
2N6544
2N6545
2N6545
MJ13014
MJ13015
MJ13332
MJ13332
MJ13333
MJE1909
MJE1909
MJE1909
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
2SC1909
2SC2078
2SC2092
2SC2166
BU105
BU126
BUX80
BUX81
BUX82
BUX83
BUX84
BUX85
BUX86
BUX87
D40D3
D42C1
D42C2
D42C3
D42C4
D42C5
D42C6
D42C7
D42C8
D42C9
D43C1
D43C2
D43C3
D43C4
D43C5
D43C6
D43C7
D43C8
D43C9
D44C1
D44C2
D44C3
D44C4
D44C5
D44C6
D44C7
D44C8
D44C9
D44C10
D44C11
D44C12
D44E1
D44E2·
D44E3
D44H1
D44H2
D44H4
D44H5
D44H7
D44H8
D44R1
D44R2
D44R3
D44R4
D44R5
D44R6
D45C1
D45C2
D45C3
D45C4
D45C5
D45C6
D45C7
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJE1909
MJE1909
MJE1909
MJE1909
BU205
MJ3030
2N6547
MJ13335
2N6545
2N6545
MJE13005
MJE13005
MJE13003
MJE13003
D40D2
MDS26
MDS26
MDS26
MDS27
MDS27
MDS27
MDS27
MDS27
MDS27
MDS76
MDS76
MDS76
MDS77
MDS77
MDS77
MDS77
MDS77
MDS77
MJE180
MJE180
MJE180
MJE181
MJE181
MJE181
MJE181
MJE181
MJE181
MJE182
MJE182
MJE182
2N6386
2N6387
2N6388
D44H10
D44H11
D44H10
D44H11
D44H10
D44H11
2N3584
2N3584
2N3585
2N3585
2N3584
2N3585
MJE170
MJE170
MJE170
MJE171
MJE171
MJE171
MJE171
PART NO.
D45C8
D45C9
D45C10
D45C11
D45C12
D45E1
D45E2
D45E3
D45H1
D45H2
D45H4
D45H5
D45H7
D45H8
D45H9
D45H12
D56W1
D56W2
D56W3
D56W4
DTS310
DTS311
DTS401
DTS402
DTS403
DTS409
DTS410
DTS411
DTS413
DTS423
DTS424
DTS425
DTS430
DTS431
DTS515
DTS516
DTS517
DTS518
DTS519
DTS660
DTS663
DTS665
DTS701
DTS702
DTS712
DTS714
DTS801
DTS802
DTS804
DTS812
DTS814
DTS1010
DTS1020
DTS4010
DTS4025
DTS4026
DTS4039
DTS4040
DTS4041
DTS4045
DTS4059
DTS4060
DTS4061
DTS4065
DTS4066
DTS4067
DTS4074
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJE171
. MJE171
MJE172
MJE172
MJE172
TIP125
TIP125
TIP126
D45H10
D45H11
D45H10
D45H11
D45H10
D45H11
D45H11
D45H11
BU208
BU208
BU207
BU207
2N6306
2N6306
2N3902
2N3902
2N6308
2N6308
MJ410
MJ411
MJ413
MJ423
2N6308 .
2N6545
2N6307
MJ431
2N6306
2N6306
2N6306
2N6307
2N6308
2N6233
2N6235
2N6235
BU204
BU205
BU207
BU208
BU205
BU207
BU208
BU207
BU208
2N6056
MJ3001
MJ3041
MJ3041
MJ10012
MJ10000
MJ10000
MJ10000
MJ10000
MJ10000
MJ10001
MJ10000
MJ10001
MJ10000
MJ10000
MJ10004
PART NO.
DTS4075
FT47
FT48
FT49
FT50
FT317
FT317A
FT317B
FT359
FT401
FT402
FT410
FT411
FT413
FT417
FT417A
FT417B
FT423
FT423
FT430
FT431
FT2955
FT3055
GE5060
GE5061
GE5062
GE6060
GE6061
GE6062
IR401
IR402
IR403
IR409
IR410
IR411
IR413
IR423
IR424
IR425
IR430
IR431
IR515
IR516
IR517
.IR518
IR519
IR640
IR641
IR642
IR645
IR646
IR647
IR660
IR663
IR665
IR701
IR801
IR802
IR900
IR901
IR1000
IR1001
IR1010
IR1020
IR2500
IR2501
IR3000
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJ10004
TIP47
TIP48
TIP49
TIP50
MJE15028
MJE15028
MJE15030
MJ10012
MJ411
MJ413
MJ410
MJ41f
MJ413
MJE15029
MJE15029
MJE15031
MJ423
MJ423
•
2N6307
MJ431
MJE2955T
MJE3055T
MJ10000
MJ10000
MJ10001
MJ10004
MJ10004
MJ10005
2N3902
2N3902
2N6308
2N6308
MJ410
MJ411
MJ413
MJ423
2N6308 .
2N6545
2N6307
MJ431
2N6250
2N6250
2N6251
2N6546
2N6547
MJ3000
MJ3001
2N6578
MJ2500
MJ2501
2N6052
MJ410
MJ423
2N5157
BU204
BU205
MJ802
MJ900
MJ901
MJ1000
MJ1001
2N6056
MJ3001
MJ2500
MJ2501
MJ3000
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1
I"~
3-5
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
•
IR3001
IR3771
IR3772 .
IR3773
IR4039
IR4040
IR4041
IR4045
IR4050
IR4055
IR4059
IR4060
IR4061
IR4065
IR4502
IR5000
IR5001
IR5002
IR5060
IR5061
IR5062
IR5252
IR5261
IR6000
IR6001
IR6002
IR6060
IR6061
IR6062
1R6251
IR6252
IR6302
KDT4l0
KDT4ll
KDT4l3
KDT423
KDT430
KDT431
KDT5l5
KDT5l6
KDT5l7
KDT5l8
KDT5l9
KP3946
KP3948
MJ105
MJ400
MJ420
MJ421
MJ424
MJ425
MJ430
MJ440
MJ450
MJ480
MJ481
MJ490
MJ491
MJ701
MJ702
MJ704
MJ721
MJ723
MJ920
MJ921
MJ1200
MJ120l
MOTOROLA
MOTOROLA
OIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJ3001
MJ3771
MJ3772
MJ3773
MJ10000
MJ10000
MJ10000
MJiOOOO
MJ10000
MJ10000
MJ100QO
MJ1000l
MJ10000
MJ1000l
MJ4502
MJ10000
MJ10000
MJ1000l
MJ10000
MJ10000
MJ1000l
MJ10003
MJ10002
MJ10004
MJ10004
MJ10005
MJ10004
MJ10004
MJ10005
MJ10006
MJ10007
2N5630
MJ4l0
. MJ4ll
MJ4l3
MJ423
2N6307
MJ431
2N6306
2N6306
2N6306
2N6307
2N6308
2N6274
2N6274
MJ205
2N3739
MM420
MM421
2N6308
2N6545
2N4234
2N4237
2N4398
2N37l3
2N37l3
2N3789
2N3789
MJ12002
MJ12002
MJ12002
MJ12002
MJ12002
(2)2N6298
(2)2N6299
(2)2N6300
(2)2N630l
PART NO.
MJ2249
MJ2250
MJ2251
MJ2252
MJ2253
MJ2254
MJ2267
MJ2268
MJ2801
MJ2802
MJ2840
MJ2841
MJ2901
MJ2940
MJ2941
MJ3010
MJ30ll
MJ3012
MJ3026
MJ3027
MJ3028
MJ3055
MJ3l0l
MJ3201
MJ3202
MJ3260
MJ3430
MJ3480
MJ3520
MJ3521
MJ3583
MJ3584
MJ3585
MJ3701
MJ3702
MJ3703
MJ3704
MJ3738
MJ3739
MJ3760
MJ3761
MJ3801
MJ3802
MJ4000
MJ4001
MJ4010
MJ40ll
MJ4200
MJ4201
MJ4210
MJ42ll
MJ4240
MJ4648
MJ5038
MJ5039
MJ5415
MJ5416
MJ6257
MJ6302
MJ6701
MJ7000
MJ7260
MJ7261
MJ8020
MJ8l0l
MJ130l0
MJE29
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N3766
2N3767
2N3738
2N3739
2N3740
2N374l
2N6594
MJ2955
2N6569
2N588l
2N5877
2N5878
2N6594
2N5875
2N5876
2N6542
2N6542
2N6542
MJ3029
MJ3029
MJ3029
2N3055
2N3766
2N3738
2N3739
2N5838
2N6307
BU208
MJ3000
MJ3001
2N6420
2N642l
2N6422
2N4898
2N4898
2N4899
2N4900
2N6424
2N6425
MJ3030
MJ9000
MJ3001
MJ3001
2N6055
2N6056
2N8053
2N6054
(2)2N6294
(2)2N6295
(2)2N6296
(2)2N6297
2N6423
MJ4647
2N5Q38
2N5039
MM5415
MM5416
2N6257
2N5630
2N6l86
2N6338
2N6546
2N6547
MJ12004
2N6l90
2N6547
TIP29
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1.
3-6
PART NO.
MJE29A
MJE29B
MJE29C
MJE30
MJE30A
MJE30B.
MJE30C
MJE33
MJE33A
MJE33B
MJE33C
MJE34
MJE34A
MJE348
MJE34C
MJE4l
MJE41A
MJE41B
MJE41C
MJE42
MJE42A
MJE42B
MJE42C
MJE47
MJE48
MJE49
MJE5l
MJE52
MJE53
MJE10l
MJE102
MJE103
MJE104
MJE105K
MJE201
MJE202
MJE203
MJE204
MJE205K
MJE340K
MJE341K
MJE344K
MJE345
MJE370K
MJE371K
MJE482
MJE483
MJE484
MJE492
MJE493
MJE494
MJE520K
MJE521K
MJE2Ol0
MJE20ll
MJE2020
MJE2021
MJE2050
MJE2055
MJE2090
MJE209l
MJE2092
MJE2093
MJE2l00
MJE2l0l
MJE2l02
MJE2l03
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
TIP29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
TIP4l
TIP41A
TIP41B
TIP41C
TIP42
.TIP42A
TIP428
TIP42C
TIP4l
TIP41A
Tlp41B
TIP41C
TIP42
TIP42A
TIP428
TIP42C
TIP47
TIP48
TIP49
MJE51T
MJE52T
MJE53T
2N5974
2N5975
2N5976
2N5976
TIP42A
2N5977
2N5978
2N5978
2N5979
TIP41A
TIP48
TIP47
TIP47
MJE3439
TIP32
TIP32
2N5l90
2N5l9l
2N5l92
2N5l93
2N5l94
2N5l95
TIP3l
TIP3l
TIP42
TIP42A
TIP4l
TlP41A
MJE200
MJE3055
TIP125
TlP125
TIP126
TIP126
·TIP120
TIP120
TIP12l
TIP12l
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
MJE2150
MJE2160
MJE2360
MJE2361
MJE2370
MJE2371
MJE2480
MJE2481
MJE2482
MJE2483
MJE2490
MJE2491
MJE2520
MJE?801K
MJE2901K
MJE2955K
MJE3055K
MJE3370
MJE3371
MJE3520·
MJE3521
MJE3738
MJE3739
MJE4918
MJE4919
MJE4920
MJE4921
MJE4922
MJE4923
MJE5190
MJE5191
MJE5192
MJE5193
MJE5194
MJE5195
.. MJE5655
MJE5656
MJE5657
MJE5960
MJE5974
MJE5975
MJE5976
MJE5977
MJE5978
MJE5979
MJE5981
MJE5982
MJE5983
MJE5984
MJE5985
MPC900
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJE210
TIP48
MJE2360T
MJE236n
TIP32
TIP32A
TIP31
TIP31A
TIP41
TlP41A
TIP32
TIP32A
TlP31
MJE280n
MJE290n
MJE2955T
MJE3055T
MJE370
2N5193
MJE520
2N5190
TIP47
TIP48
TIP30
TIP30A
TIP30B
TlP29
TIP29A
TIP29B
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126
TIP47
TIP48
TIP49
2N6489
TIP42
TIP42A
TIP42B
TIP41
TIP41A
TIP41B
2N6490
2N6491
2N6486
2N6487
2N6488
MC1563 AND
2N6050
MC1726 AND
2N6077
MPC1000
MPSUll
MPSU12
MPSU47
NSD102
NSD103
NSD104
NSD105
NSD106
NSD123
NSD127
NSD128
NSD129
NSD130
MPSU10
MPSU45
MPSU31
MDS23
MDS23
2N6552
2N6552
2N6553
2N6591
2N6591
2N6592
2N6593
2N6557
PART NO.
NSD132
NSD133
NSD134
NSD135
NSD151
NSD152
NSD202
NSD203
NSD204
NSD205
NSD206
NSD457
NSD458
NSD459
NSP41
NSP41A
NSP41B
NSP41C
NSP42
NSP42A
NSP42B
NSP42C
NSP105
NSP205
NSP370
NSP371
NSP520
. NSP521
NSP575
NSP576
NSP577
NSP578
NSP579
NSP580
NSP581
NSP582
NSP585
NSP586
NSP587
NSP588
NSP589
NSP590
NSP595
NSP596
NSP597
NSP598
NSP599
NSP600
NSP695
NSP695A
NSP696
NSP696A
NSP697
NSP697A
NSP698
NSP698A
NSP699
NSP699A
NSP700
NSP700A
NSP701
NSP702
NSP2010
NSP2011
NSP2021
NSP2090
NSP2091
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N6557
2N6558
2N6558
2N6559
2N6549
2N6548
MDS73
MDS73
2N6555
2N6555
2N6556
2N6591
2N6593
2N6558
TIP41
TIP41A
TIP41B
TIP41C
TIP42
TIP42A
TIP42B
TIP42C
TIP42A
TIP41A
TIP32
TlP32
TIP31
TIP31
TIP29A
TIP30A
TIP29A
TIP30A
TIP29B
TIP30B
TIP29C
TIP30C
TIP29A
TIP30A
TIP29A
TIP30A
TIP29B
TIP30B
TlP31A
TIP32A
TlP31A
TIP32A
TIP318
TlP32B
TIP120
TlPl00
TIP125
TIP105
TlP120
TIP100
TIP125
TIP105
TIP121
TIP10l
TlP126
TIP106
TIP122
TIP127
TIP42
TIP42A
TIP41A
TIP125
TIP125
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1
3-7
PART NO.
NSP2092
NSP2093
NSP2100
NSP2101
NSP2102
NSP2103
NSP2370
NSP2480
NSP2481
NSP2490
NSP2491
NSP2520
NSP2955
NSP3054
NSP3055
NSP4918
NSP4919
NSP4920
NSP4921
NSP4922
NSP4923
NSP5190
NSP5191
NSP5192
NSP5193
NSP5194
NSP5195
NSP5974
NSP5975
NSP5976
NSP5977
NSP5978
NSP5979
NSP5980
NSP5981
NSP5982
NSP5983
NSP5984
NSP5985
PM26K380
PM27K380
PMD10K-40
PMD10K-60
PMD10K-80
PMD10K-l00
PMDllK-40
PMDllK-60
PMDllK-80
PMDllK-l00
PMD12K-40
PMD12K-60
PMD12K-80
PMD12K-l00
PMD13K-40
PMD13K-60
PMD13K-80
PMD13K-l00
PMD16K-4O
PMD16K-60
PMD16K-80
PMD16K-l00
PMD17K-4O
PMD17K-60
PMD17K-80
PMD17K-l00
PMD20K-120
PMD25K-120
MOTOROLA
DIRECT
REPLACEMENT
MOTOROLA
SIMILAR
REPLACEMENT
TIP126
TIP126
TIP120
TIP120
TIP121
TIP121
TIP32
TIP31
TlP31A
TlP32
TlP32A
TIP31
MJE2955T
TIP31A
MJE3055T
TlP30
TlP30A
TIP30B
TIP29
TIP29A
TIP29B
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126
TlP42
TIP42A
TIP42B
TIP41
TlP41A
TlP41B
2N64S9
2N6490
2N6491
2N6486
2N6487
2N6488
•
MJ13015
2N6543
2N6057
2N6057
2N6058
2N6059
2N6050
2N6050
2N6051
2N6052
MJ1000
MJ1000
MJ100l
2N6059
MJ900
MJ900
MJ901
2N6052
2N6282
2N6282
2N6283
2N6284
2N6285
2N6285
2N6286
2N6287
2N6578
2N6578
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
•
PM01600K
PM01601K
PM01602K
PM01603K
PM01700K
PM01701K
PM01702K
PM01703K
RCA1B01
RCA1C03
RCA1C04
RCA1C05
RCA1C06
RCA1C07
RCA1C08
RCA1C09
RCA1C10
RCA1C11
RCA1C14
RCA29
RCA29A
RCA29B
RCA29C
RCA30
RCA30A
RCA30B
RCA30C
RCA31
RCA31A
RCA31B
RCA31C
RCA32
RCA32A
RCA32B
RCA32C
RCA41
RCA41A
RCA41B
RCA41C
RCA42
RCA42A
- RCA42B
RCA42C
RCA120
RCA121
RCA122
RCA125
RCA126
RCA410
RCA411
RCA413
RCA423
RCA431
RCA1000
RCA1001
RCA3054
RCA3055
RCA8203
RCA8203A
RCA8203B
RCA8350
RCA8350A
RCA6350B
RCA8766
RCA8766A
RCA8766B
RCA8766C
MOTOROLA
MOTOROLA
SIMILAR
DIRECT
REPLACEMENT REPLACEMENT
2N6282
2N6282
2N6283
2N6284
2N6285
2N6285
2N6286
2N6287
2N5878
TIP31C
TIP32C
2N6315
2N6317
2N6488
2N6491
2N6488
TIP41
TIP42
2N6315
TIP29
TIP29A
TIP29B
TIP29C
TIP30
TIPaOA
TIP30B
TIP30C
TIP31
TIP31A
TlP31B
TIP31C
TlP32
TIP32A
TIP32B
TIP32C
TIP41
TIP41A
TIP41B
TIP41C
TIP42
TIP42A
TIP42B
1;IP42C
TlP120
TIP121
TIP122
TIP125
TIP126
MJ410
MJ411
MJ413
MJ423
MJ431
MJ1000
MJ1001
TIP31A
MJE3055
TIP125
TIP126
TIP127
2N6050
2N6050
2N6051
MJ10002
MJ10002
MJ10003
MJ10003
PART NO.
RCA87660
RCA8766E
RCA8767
RCA8767A
RCA8767B
RCA9113
RCA9113A \
RCA9113B
RCP111A
RCP111B
RCP111C
RCP1110
RCP113A
RCP113B
RCP113C
RCP1130
RCP115
RCP115B
RCP117
RCP117B
RCP700A
RCP700B
RCP700C
RCP7000
RCP701A
RCP701B
RCP701C
RCP701D
RCP702A
RCP702B
RCP702C
RCP7020
RCP703A
RCP703B
RCP703C
RCP7030
RCP704
RCP704B
RCP705
RCP705B
RCP706
RCP706B
RCP707
RCP707B
RCS29
RC529A
RCS29B
RCS30
RCS30A
RCS30B
RCS30C
RCS31
RCS31A
RCS31B
RCS32
RCS32A
RCS32B
RCS32C
RCS242
RCS258
RC5258
RCS559
RC5560
RCS564
RCS579
RC5579
50M6000
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJ10003
MJ10003
. 2N6546
2N6547
2N6547
2N6546
2N6547
2N6547
2N6557
2N6557
2N6558
2N6559
2N6557
2N6557
2N6558
2N6559
2N6591
2N6557
2N6591
2N6557
2N6554
2N6554
2N6555
2N6556
2N6551
2N6551
2N6552
2N6553
2N6554
2N6554
2N6555
2N6556
2N6551
2N6551
2N6552
2N6553
2N6554
2N6554
2N6551
2N6551
2N6554
2N6554
2N6551
2N6551
2N4231A
2N4232A
2N4233A
2N6312
2N6313
2N6314
2N6420
2N4231A
2N4232A
2N4233A
2N6312
2N6313
2N6314
2N6421
2N3055H
2N3772
2N5885
2N6211
2N6211
2N6249
2N6306
2N6306
MJ10012
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1
3-8
PART NO.
SOM6001
SOM6002
SOM6003
SOM20301
SOM20302
SOM20303
SOM20304
SOM20311
SOM20312
SOM20313
SOM20314
SOM20321
SOM20322
SOM20323
SOM20324
SOM21301
SOM21302
SOM21303
SOM21304
SOM21311
SOM21312
SOM21313
SOM21314
SON1010
SON1020
SON4040
SON4045
SDN6000
SDN6001
SON6002
SDN6060
SON6061
SON6062
SON6251
SON6252
SON6253
SOT7A01
SOT7A02
SOT7A03
SOT7A07
SOT7A08
SOT7A09
SOT401
SOT402
SOT410
SOT411
SOT413
SOT423
SOT424
SOT425
SOT430
SOT431
SOT520
SOT521
SOT522
SOT525
SOT526
50T527
SOT530
SOT531
SOT532
SOT535
50T536
50T537
50T540
SOT541
SOT542
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJ10012
MJ10012
MJ10012
MJ4033
MJ4033
MJ4034
MJ4035
MJ4033
MJ4033
MJ4034
MJ4035
MJ4033
MJ4033
MJ4034
MJ4035
MJ4030
MJ4030
MJ4031
MJ4032
MJ4030
MJ4030
MJ4031
MJ4032
2N6056
MJ3001
MJ 10000
MJ10000
MJ10000
MJ10000
MJ10001
MJ10000
MJ10000
MJ10000
MJ10002
MJ10002
MJ10003
2N5428
2N5428
2N5428
2N5427
2N5427
2N5427
2N6543
2N6543
MJ410
MJ411
MJ413
MJ423
2N6308
2N6545
2N6307
MJ431
2N6306
2N6306
2N6306
2N6306
2N6306
2N6306
2N6306
2N6306
2N6306
2N6306
2N6307
2N6307
2N6307
2N6307
2N6307
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
80T545
80T546
80T547
80T550 .
80T551
80T552
80T1050
80T1051
80T1052
80T1053
80T1054
80T1055
80T1056
80T1057
80T1058
80T1059
80T1060
80T1061
80T1062
80T1063
80T1064
80T1301
80T1302
80T1303
80T1304
80T3125
80T3126
80T3321
80T3322
8013323
80T3324
80T3325
80T3326
80T3327
8013328
8013401
80T3402
80T3403
80T3404
80T3405
80T3406
80T3407
80T3408
80T3421
8013422
80T3423
80T3424
80T3425
80T3426
80T3427
80T3428
80T3501
80T3502
80T3503
80T3504
80T3505
80T3506
80T3507
80T3508
80T3775
80T3776
80T3777
80T3778
80T4451
80T4452
80T4453
80T4454
MOTOROLA
DIRECT
REPLACEMENT
MOTOROLA
SIMILAR
REPLACEMENT
2N6308
2N6308
2N6308
2N6308
2N6308
2N6308
2N5838
2N5840
2N6543
2N6543
2N6543
2N5838
2N3902
2N6545
2N6545
2N6545
2N5838
2N3902
2N6545
2N6545
2N6545
2N6235
2N6235
2N6235
2N6235
MJ6701
MJ6701
MJ8100
MJ8100
2N6190
2N6192
MJ8100
MJ8100
2N6190
2N6192
2N5347
2N5347
2N5347
2N5349
2N5347
2N5347
2N5347
2N5349
2N4877
2N4877
2N5336
2N5338
2N4877
2N4877
2N5336
2N5338
2N3719
2N3720
2N6303
2N6192
2N3867
2N3868
2N6303
2N6193
2N6867
2N3868
2N6303
2N3867
2N4877
2N5336
2N4877
2N5336
PART NO.
80T4455
80T4456
80T4483
80T4901
80T4902
80T4903
80T4904
80T4905
80T5101
80T5102
80T5103
80T5111
80T5112
80T5113
80T5501
80T5502
80T5503
80T5504
80T5506
80T5507
80T5508
80T5509
80T5511
80T55.12
80T5513
80T5514
80T5901
80T5902
80T5903
80T5904
80T5905
80T5906
80T5907
80T5908
80T5909
80T5910
80T5911
80T5912
80T5913
80T5914
80T5951
80T5952
80T5953
80T5954
80T5955
80T5956
80T6308
80T6309
80T6310
80T6311
80T6312
80T6313
80T6314
80T6315
80T6316
80T6408
80T6409
80T6410
80T6411
80T6412
80T6413
80T6414
80T6415
80T6416
80T6901
80T6902
80T6903
MOTOROLA
DIRECT
REPLACEMENT
MOTOROLA
SIMILAR
REPLACEMENT
2N5337
2N5337
2N4877
2N3583
2N6233
2N6234
2N3585
2N3585
TIP41A
TIP41A
TIP41A
TlP42A
TIP42A
TIP42A
2N5537
2N5537
2N5537
2N5539
2N4877
2N4877
2N5336
2N5338
2N5337
2N5337
2N5337
2N5339
2N3766
2N3766
2N3767
2N5050
2N5050
2N3766
2N3766
2N3767
2N5050
2N5050
2N5427
2N5427
2N5427
2N5429
2N5051
2N3583
2N5052
2N5051
2N3583
2N5052
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5050
2N5051
2N5052
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1
3-9
PART NO.
80T6904
80T7201
80T7202
80T7203
80T7204
80T7205
80T7206
80T7207
80T7208
80T7209
80T7603
80T7604
80T7605
80T7609
80T7610
80T7611
80T7612
80T7731
80T7732
80T7733
80T7734
80T7735
80T7736
80T9201
80T9202
80T9203
80T9204
80T9205
80T9206
80T9207
80T9208
80T9209
80T9210
80T9301
80T9302
80T9303
80T9304
80T9305
80T9306
80T9307
80T9308
80T9309
80T9701
80T9702
80T9703
80T9704
80T9705
80T9706
80T9707
80T12301
80T12301
80T12302
80T12302
80T12303
80T12303
80T12305
80T12306
80T12307
80T13301
80T13302
80T13303
80T13304
80T13305
80T801
80T802
80T803
80T805
MOTOROLA
DIRECT
REPLACEMENT
MOTOROLA
SIMILAR
REPLACEMENT
2N5052
2N6306
2N6306
2N6306
2N6307
2N6308
2N6341
2N6306
2N6306
2N6307
2N6338
2N6339
2N6341
2N6338
2N6339
2N6341
2N6249
2N5881
2N5881
2N5882
2N5629
2N5630
2N5631
2N6569
2N5878
2N5632
2N5633
2N6569
2N3055
2N5878
2N5632
2N5633
2N6569
2N5067
2N5068
2N5069
2N5067
2N5068
2N5069
2N3713
2N3715
2N3716
2N5303
2N5629
2N5630
2N5882
2N5629
2N5330
2N3055
MJ5039
2N5039
MJ7260
•
2N5347
MJ7260
2N5347
2N5347
2N5347
2N5347
2N6546
2N6547
2N6547.
MJ13334
MJ13335
2N5346
2N5346
2N5348
2N5346
POWER TRANSISTOR CROSS REFERENCE (continued)
PART NO.
•
SOTB06
SOTB07
SE9303
SE9304
SE9305
SE9306
SE9307
SE9308
SE9331
SE9403
SE9404
SE9405
SE9406
SE9407
SE9408
SV7056
SVT200-10
SVT250-5
SVT250-10
SVT300-5
SVT300-10
SVT350-3
SVT350-5
SVT400-3
SVT400-5
SVT450-3
SVT450-5
SVT6000
SVT6001
SVT6002
SVT6060
SVT6061
SVT6062
SVT6251
SVT6252
SVT6253
T1P33
TIP33A
TIP33B
TIP33C
TIP34
TIP34A
TIP34B
TIP34C
TIP35
TIP35A
TIP35B
TIP35C
TIP36
TIP36A
TIP36B
TIP36C
TIP51
TIP52
TIP53
TIP54
TIP55A
TIP56A
TIP57A
TIP58A
TIP61
TIP61A
TIP61B
TIP61C
TIP62
TIP62A
TIP62B
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N5346
2N5346
MJ3000
MJ3001
2N6059
MJ4033
MJ4034
MJ4035
2N3739
MJ2500
MJ2501
2N6052
MJ4030
MJ4031
MJ4032
2N6558
2N6306
2N5838
2N6306
2N6542
2N6307
2N6545
2N5840
2N5157
2N6543
2N6545
2N6543
MJ10004
MJ10004
MJ10005
MJ10004
MJ10004
MJ10005
MJ10006
MJ10006
MJ10007
TIP41
TIP41A
TIP41B
TIP41C
TIP42
TIP42A
TIP42B
TIP42C
2N5301
2N5885
2N5886
MJ802
2N4398
2f.15883
2N5884
MJ4502
2N6306
2N6307
2N6308
2N6545
2N6546
2N6307
2N6308
2N6544
TIP29
TIP29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
PART NO.
T1P62C
TIP69
TIP70
TIP71
TIP72
TIP75
TIP140
TIP141
TIP142
TIP145'
T1P146
TIP147
TIP150
TIP151
TIP152
TIP160
TIP161
TIP162
TIP303
TIP304
TIP305
TIP306
TIP309
TIP310
TIP501
TIP502
TIP503
TIP504
T1P515
TIP516
TIP530
TIP531
TIP532
TIP535
TIP536
TIP537
TIP538
TIP539
TIP540
TIP544
TIP545
TIP546
TIP550
TIP551
TIP552
TIP553
TIP554
TIP555
TIP556
TIP558
TIP559
TIP560
TIP561
TIP562
TIP563
TIP620
TIP621
TIP622
TIP625
TIP626
TIP627
TIP640
TIP641
TIP642
TIP645
TIP646
TIP647
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
TIP30C
BU205
BU205
BU205
BU205
MJE13005
2N6057
2N6058
2N6059
2N6050
2N6051
2N6052
MJE13006
MJE13007
MJE13007
MJ10002
MJ10002
MJ10012
2N6544
2N6544
2N6545
2N6545
BU208
BU208
2N4877
2N4877
2N5050
2N5051
2N6339
2N6341
2N6235
2N6546
2N6547
2N6544
2N6544
2N6545
2N6249
2N6546
2N6547
2N6226
2N6227
2N6228
BU205
BU205
BU207
BU208
2N6306
2N6307
2N6545
2N6544
2N6544
2N6545
2N6545
2N6546
2N6547
2N6055
2N6056
2N6578
2N6053
2N6054
2N6052
MJ3000
MJ3001
2N6578
MJ2500
MJ2501
2N6052
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1,
3-10
PART NO.
TIP660
TIP661
TIP662
TIP2955
TIP3055
UMT1008
UMT1009
UMT1203
UMT1204
WT5100
WT5200
40250
40251
40310
40312
40313
40316
40318
40322
40324
40325
40328
40363
40364
40513
40514
40542
40543
40613
40618
40621
40622
40624
40627
40629
40630
40631
40632
40636
40829
40830
40831
40850
40852
40853
40854
40871
40872
40873
40874
40875
40876
40885
40886
40887
41500
41501
41504
41505
41506
43104
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MJ10002
MJ10002
MJ10012
MJE2955
MJE3055
MJ13014
MJ13015
MJE13004
MJE13005
MJ13015
2N6547
2N4231A
2N6569
2N4231A
2N4232A
2N4240
2N4231A
2N4240
2N4240
2N4231A
2N6569
2N4240
2N5877
2N4233A
2N5984
2N5984
2N5978
2N5978
TIP31
TIP31
TIP31
TIP31
TIP41A
TIP41A
TIP31
TIP31
TIP31A
TIP41A
2N5878
2N6316
'2N6315
2N6315
2N4240
2N6543
2N6546
2N6546
TIP41C
TIP42C
TIP41B
TIP41B
T1P41C
TIP41A·
I
2N5655
2N5656
2N5657
TIP29
TIP30
TIP31
2N5655
2N6543
2N5631
,\." power TransiStor Data Sheets
, ::"
."
.'.
,lll
4-1
II
2N3054
2N3054A
(SILICON)
4 AMPERE
MEDIUM-POWER NPN SILICON TRANSISTORS
POWER TRANSISTORS
NPN SILICON
55 VOLTS
25 WATTS - 2N3054
75 WATTS - 2N3054A
· .. designed for general purpose switching and amplifier applications.
•
• Excellent Safe Operating Area
• DC Current Gain Specified to 3.0 Amperes
• Complement to PNP Type 2N6049 or 2N4912
*MAXIMUM RATINGS
Symbol
Rating
I 2N3054
2N3054A
Unit
Collector-Emitter Voltage
VeEO
55
Vdc
Collector-Emitter Voltage
(RSE = 100 nl
Collector-Base Voltage
VeER
60
Vdc
Ves.
90
Vdc
VES
7.0
Vdc
4.0
Adc
Emitter-Base Voltage
Collector Current - Continuous
Ie
Peak
10"
Base Current
= 25°C
Po
Operating and Storage Junction,
Temperature Range
Adc
2.0
18
Total Device Dissipation @TC
Derate above 2SoC
75
0.43
J
25
0.143
Watts
Wloe
-65 to +200
TJ, T stg
°e
STYLE 1:
PIN 1. 8ASE
2. EMITTER
CASE: COLLECTOR
I
AU --.
iX =---~-~~-
Tj--
----+---+
E
SEATING PLANE
*Indicates JEDEC Registered Data
**Addition to JEDEC Registered Data
---F--
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ca5~
S
FIGURE 1 - POWER-TEMPERATURE DERATING
0
I-0
I"'--..
I"'"
0
0
I"""
0
0
0
0
---
-
"
2NJ054A
'...."
"~
r-- ~3054
0
20
40
60
80
100
120
~
t-- r-- ~
140
160
180
200
MILLIMETERS
DIM MIN MAX
8 11.94 12.70
C
6.35 8.64
D
0.71 0.86
E
1.27 1.91
F 24.33 24.43
G
4.83 5.33
2.67
H
2.41
14.48 14.99
J
K
9.14
P
1.27
Q
3.61
3.86
S
8.89
T
3.68
15.75
U
-
INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.152
0.350
0.145
0.620
-
All JEDEC Dimensions and and Notes Apply.
CASE 80-02
TO-66
TC. CASE TEMPERATURE IDC)
4-2
/
2N3054,A
ELECTRICAL CHARACTERISTICS (TC
= 25 0
unless otherwise noted)
'Symbol
Characteristic
Min
Max
55
-
60
-
-
500
Unit
*OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 100 mAde, IS = 0)
VCEO(sus)
Collector-Emitter Sustaining Voltage (1)
(lC = 100 mAde, RSE = 100 n)
VCER(sus)
Collector Cutoff Current
(VCE = 30 Vde, IS = 0)
ICEO
Collector Cutoff Current
(VCE = 90 Vde, VSE(off) = 1,5 Vde)
(VCE = 90 Vde, VSE(off) = 1.5 Vde, TC = 1500 C)
ICEX
Emitter Cutoff Current
(VSE = 7,0 Vde, IC = 0)
IESO
Vde
Vde
"A de
mAde
1.0
6.0
-
mAde
1.0
II
*ON CHARACTERISTICS (1)
DC Current Gain
(lC = a,s Adc, VCE = 4.0 Vde)
(lc = 3,0 Adc, VCE = 4.0 Vde)
-
hFE
150
25
5.0
Collector-Emitter Saturation Voltage
(lc = 500 mAde, IS = 50 mAde)
(lc =3.0 Ade, IS = 1.0 Ade)
VCE(sat)
Sase-Emitter On Voltage
(lc = 500 mAde, VCE = 4.0 Vde)
VSE(on)
-
Vde
-
1.0
6.0
Vde
1.7
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 200 mAde, VCE = 10 Vde)
·Small-Signal Current Gain
(lC = 100 mAde, VCE = 4.0 Vde, I = 1.0 kHz)
MHz
IT
I
3.0
-
25
180
30
-
-
hie
·Common-Emitter Cutoff Frequency
(lC = 100 mAde, VCE = 4.0 Vde)
kHz
Ihle
·Indicates JEDEC Registered Data
(1) Pulse test: Pulse Width ~300 ",.S. Duty Cycle ~2.0%
FIGURE 2 - SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
3.0
APPROXflcTURN.ON
PULSE
Yin
.-
II
I II
IJ!I~ ~ \0
2.0
+11 V I
11
TJ =2SoC
1.0
S
VBE(off)
]
:
APPROX
+11 V
"
-4,0 V
11 <15ns
100 < 12 < SOD".
13< 15ns
13
0.5
~ 0.3
>=
.>
0.2
O. 1
APPROX 9.0 V
0.05
I---
--
f- 1,@VCC"'0Vd,
r-
DUTY CYCLE ~ 2.0%
12
TURN·OFF PULSE
1,@VCC-30Vd,
0.03
0.04 0.06
0.1
Id@lVBEloff)
0.2
0.4
=a
0.6
1.0
IC, COLLECTOR CURRENT lAMP)
4-3
2.0
4,0
2N3054,A
FIGURE 4 - THERMAL RESPONSE
1.0
~
O. 71--0-0.5
O. 5
z
~w
O. 3t--O!2
,..<.:1
~~ D.2
iii
0~1
t;~
~f3
I--- ..-:::::;; ;:;:;:
~~ o. It==0.05
fd ~ 0.07F=--O.2
!:::!ffi 0.05
.... I".
.
~~O.o3 i-"""
a:
~
Plpk)
0.01
........ I I
~rrmrE
0.0 2
•
OJCII) = 'It) OJC
o CURVES APPLY FOR POWER
PU LSE TRAIN SHOWN
READ TIME AT 11
0.0 1
0.01
. 0.02 0.03
0.05
0.1
TJlpkl - TC" Plpk) 0JCII)
lilll
I
0.2
0.3
1.0
0.5
2.0 3.0
5.0
10
I, TIME o,PULSE WIDTH Imsl
20
fJUl
-tf-j
t2
30
50
Jlll100
DUTY
CYCLE,
0 =11/12
200 300
500
1000
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
10
5.0!,1S~ ~1.0ms~.5,i.
7.0
ii: 5.0
2N3054A
~
0
3.01--- f- f-- TJ - 200 C
'" 2.0
1:)
a: 1.0
~
8j
E
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran-
"\
.....
'"
~
,
2N3054
sistor that must be observed for rei iable operation; i.e., the transistor
1\ \
I· ....
must not be subiected to greater dissipation than the 'curves indicate.
The data of Figure 5 il baled on T J(pk) lIZ 200°C; TC II variable
depending on conditions. Second breakdown pulse limits are valid
for duty cvcle. to 10% provided T J(pk) < 200°C. T J(pk) may be
calculated from the data in Figure 4. At high case temperaturel,
thermal limitations will reduce the power that can be handled to
values less than the limitations Imposed by second breakdown.
0.7
Curves ApplV Below Rated VCEO
0.5
d~""i:
0.3 I-
SECOND BREAKDOWN LIMITED
I- - - -'- - BONDING WIRE LIMITED
0.2 I- - __ - _ THERMAL L1MITATION@ TC = 250C
O. 1
2.0
I
I I
3.0
5.0
I II
7.0
I
10
I
20
I
30
40 50 60
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI
FIGURE 6
~
TURN-OFF TIME
3. 0
2.0
FIGURE 7 - CAPACITANCE
300
1"-
Is
1.0
IIBI'IB2
Iclla -10
TJ-250C
200
...
@VCC=30Vdc
]
,.w
;::
.
O. sF"-
"-
O.3
\
o.2
<.:I
Z
r-.
;:!:
100
.~
0
c::;
if@VCC= 10 Vdc
O. 1
-
f"-I'
1-1"-
W
tl
TJ = 2501:
Cib
'"
0
Cob
0.0 5
0.0 3
0.04
0.06
0.1
0.2
0.4
0.6
1.0
2.0
30
0.1
4.0
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT IAMPI
4-4
50
100
2N30S4,A
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE B - DC CURRENT GAIN
_ 1.0
300
10
0:
0:
SO
0
30
~o
ffi
I--r-2SoC
:::>
..,..,
ul
~
...-
::+i-
V
0.01
0.02
0.04
...0.4
1.0
2.0
0.6
~
\
[\..
0.4
o
iiij
~
0.2
..,o
i'.
0.2
\
- -r-
\.
ul
!;; 0
1.0
4.0
2.0
5.0
,...s
'APPLIES FOR IC/IB:5 hFE/2
+1.5
~
25'CID
+0.5
~
:::>
-0.5
!;( -1.0
0:
w
~
w
I IIII
IIIII
1.0
mG.°R~
-1.5
'; -2.0
q:, -2.5
0.004
O.B
0.0 I
0.02
0.04
VBE(satll@IC/IB= 10
c;
0
~250C- rII!i V
IJ.U.V
~
w
'"
c;
0.2
1.0
0.4
2.0
V
<[
0
0.4
:>
./
0.2
4.0
0.01
0.02
...ffi
10
e'"
x
f--VCE =30 V
......
w
4.0
~
./
:1i0:
0:
0:
-VCE=30Vdc
IC· 10 ICES-
......
.., 106
:::>
......
...... ......
......
iiijl0- I~ =REVERSE
==
-0.4
-0.1
+0.1
+0.2
-
......
...... ......
.......
......
......
ICES
-0.2
"'<
=:TYPICAL ICES
-VALUES OBTAINED
=~ROM FIGURE 12
~250C
-0.3
IC·2ICES
IC~ICES
FORWARO= ~
..,o
./
~
lOS
:;; 100 1== =IOO'C
o
10-3
2.0
'" 107
r--TJ =150'C
If--'
'J'
.!:!1O-2
1.0
0.4
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
FIGURE 12 - COLLECTOR CUT·OFF REGION
.3
0.2
IC. COLLECTOR CURRENT (AMP)
103
<[
0.1
0.04
~
.-
VCE!sat)@ ICIIB = 10
0
0.004
IC. COLLECTOR CURRENT (AMP)
_ 102
'"
.-
0.6
III!
0.1
l-
>
-55 t, 150'C
IIII
TJ = 25'C
Oi
Ilso'~ IIIII /'
8
III
500 1000
200
FIGURE 11 - "ON" VOLTAGES
'9VC FO R VCE("t)
~
~ +1.0
100
lB. BASE CURRENT (mA)
FIGURE 10 - TEMPERATURE COEFFICIENTS
+2.5
TJ" 2S'C
50
20
1.0
IC. COLLECTOR CURRENT (AMP)
~ +2.0
3.0A
1.0 A
0:
I'
0.1
I
500mA
::
I""'..
20
10
0.004
"',..[\
........... "'
III
IC = 100.mA
>
;;; O.B
r--
~ 100
'"ffi
I
S
o
VCE = 4.0 Vdc-
TJ=ISO'C
200
+0.3
+0.4
102
+0.5 +0.6
o
20
40
60
BO
100
120
140
TJ.JUNCTION TEMPERATURE (OC)
VBE. BASE·EMITIER VOLTAGE (VOLTS)
4-5
160
160
200
•
PNP
MJ2955
NPN
2N3055
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPL.EMENTARY SILICON
· .. designed for general-purpose switching and amplifier applications.
•
•
DC Current Gain - hFE = 20-70
•
Collector-Emitter Saturation Vaitage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
•
Excellent Safe Operating Area
@
60 VOLTS
IC = 4 Adc
.115 WATTS
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Emitter Voltage
VCER
70
Vdc
Collector-Base Voltage
VCB
100
Vdc
Emitter-Base Voltage
VEB
7
Vdc
Collector Current - Continuous
IC
15
Adc
Base Current
18
7
Adc
Total Power Dissipation@ TC = 2SoC
Po
Rating
Derate above 2SoC
TJ. T stg
OperatIng and Storage Junction
Unit
liS
0.657
W/oC
-65 to +200
DC
Temperature Range
Watts
Lr~
r~-K
E
SEATlN(-~
t.
PLANE
THERMAL CHARACTERISTIcS
Characteristic
Thermal Resistance, Junction to Case
NOTE:
1. DIM "0" IS DIA.
FIGURE 1 - POWER DERATING
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
160
140
S
~
z
0
;::
::
[i
0
'"
~
~
DIM
120
~
100
I'...
~
80
6~
A
8
C
0
~
E
...........
40
F
t......
G
o
o
H
...... r--....
20
J
~.
25
50
75
100
150
m
200
TC. CASE TEMPERATURE (DCI
K
0
R
MILLIMETERS
MIN MAX
-
39.37
1.550
21.08
0.830
7.62 0.250 0.300
1.09 0.039 0.043
3.43
- 0.135
29.90 30.40 1.177 1.197
10.67
11.18 0.420 0.440
5.33
5.59 0.210 0.220
16.64 17.15 0.655 0.675
11.18 12.19 0.440 0.480
3.84
4.09 0.151 0.161
1.050
- 26.67
Collector connected to case,
CASE 11·01
6.35
0.99
(TO·3)
4-6
INCHES
MIN
MAX
2N3055 NPN/MJ2955 PNP
ELECTRICAL CHARACTERISTICS
I
IT
c•
25 0 C unl ... oth ..
w". noted)
Symbol
Min
Max
Unit
Collector-Emitter Sustaining Voltage (1)
(lC = 200 mAde, IB = 01
VCEO(,u,1
60
-
Vde
Collector-Emitter Sustaining Voltage (1)
VCER(,u,)
70
-
Vde
Collector Cutoff Current
(VCE = 30 Vde, IB = 0)
ICEO
-
0.7
Collector Cutoff Current
ICEX
-
1.0
5.0
Characteristic
·OFF CHARACTERISTICS
(lC
= 200 mAde, RBE = 100 Ohm,)
(VCE
(VCE
= 100 Vdc, VBE(off) = 1.5 Vde)
= 100 Vde, VBE(off) = 1.5 Vde, TC = 150°C)
Em itter Cutoff Current
(VBE = 7.0 Vde,lc = 0)
,
lEBO
' mAde
mAde
-
5.0
rnA.de
·ON CHARACTERISTICS (1)
DC Current Gain
(lC = 4.0 Ade, VCE = 4.0 Vde)
(lC = 10 Ade, VCE = 4.0 Vde)
-
hFE
Collector-Emitter Saturation Voltage
20
5.0
70
-
1.1
-
1.5
2.5
-
15
120
10
-
Vde
VCE(,.t)
(lC = 4.0 Ade, IB = 400 mAde)
(lC = 10 Ade, IB = 3.3 Ade)
3.0
Base-Emitter On Voltage
(lC = 4.0 Ade, VCE = 4.0 Vde)
VBE(on)
Vde
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VeE = 40 Vdc. t = 1.0 s; Nonrepetitive)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
(lC = 0.5 Ade, VCE = 10 Vde, I = 1.0 MHz)
IT
·Small-Signal Current Gain
(lC = 1.0 Ade, VCE = 4.0 Vde, 1= 1.0 kHz)
hie
·Small-Signal Current Gain Cutoff Frequency
Ihle
MHz
kHz
(VCE = 4.0 Vde, IC = 1.0 Ade, I = 1.0 kHz)
* Indicates Within JEDEC Registration. (2N3055)
(1) Pul,e Test: Pulse Width.; 3001'5, Dutv Cvele .; 2.0%.
FIGURE 2 -
ACTIVE REGION SAFE OPERATING AREA
2N3055, MJ2955
-
20
10
ii:
,,~ OOlls~50JlS\50IJS
-
~
§
0:
" ........ l"
::>
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated for temperature
" .......
0:
C
~
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indiCate.
The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable
...... "-
1'-
"
8
E
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
dc= ==1ms
according to Figure 1.
0.6
0.4
=
- r- - - - ~_
t-- r-
i
== ~
- -
Bonding Wire limit
.
Thermally limited @TC '" 25 0 C(Single Pulse) -
I I
Second B'j'kdOWn ~imit
I
I-I -I--
10
20
49
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
60
4-7
•
2N3055 NPN/MJ2955 PNP
NPN
PNP
2N3055
·MJ2955
FIGURE 3 - DC CURRENT GAIN
500
'20
VCE-4.0V
300 t - - TJ" 150 GC
...'"
100
70 ~
0
~
"'~
~
30
;
20
•
c
r-...
z
;;:
I II
Tp 150GC
VCp4.0 V
I-- f-- 55GC
~ 50
.......
........
~
"
10
1.0
5.0
0.1
0
'"~
-55GC
t-
f..- 1-2;'c
100
25GC
......
11
i---
200
z
;;:
O-H-l
~
30
~
20
r"t-...
f'...
f'
10
0.2
0.5 0.1
0.3
1.0
2.0
3.0
5.0
1.0
0.2
01
10
0.3
0.5 0.1
IC. COLLECTOR CURRENT (AMP)
2.0
1.0
3.0
5.0 1.0 10
IC. COLLECTOR CURRENT (AMPI
FIGURE 4 - COLLECTOR SATURATION REGION
~ 2.0
T~" J5 G6
1.11
I,ll
o
~
"' 1. 6
'"
~
o
4.0 A
IC"I.0 A
~
~
u.I
2.0
I. 2
::::
~
ti:
0.8
~
g
_
_ 0.4
~
~
>
0
5.0
10
50
20
100
200
500
1000
2000
5000
--
\
8
'-
>
\
o
"-
1\
0.4
8
2
1.
~ O.a
\
Tp 25GC
S.OA
1.6
,.
g
1
o
4.0 A
'"~
S.OA
o
ffi
rTlT
II
IC "1.0 A
0
5.0
10
50
20
'B. BASE CURRENT (mA)
100
200
'500
1000
2000
5000
'a. aASE CURRENT (mA)
FIGURE 5 - "ON" VOLTAGES
---- -
1.4
1.2
2.0
TJ" 25GC
TJ-25GC
-
S 1.0
"'
'"~
0.6
o
I-- I >
>' 0.4
0.2
i I
/
~ 1. 2
"'
'"
~
VBi @VfE 4'j
L j
I I
-
~
.........
VSE{sa,) fiillCfls - 10
~ 0.8
1.6
V
VaE(sa') @ lelia" 10
c--
~
II
I_III
VBE @ VCF~ ,4 ~ V,
0.8
-I
>
,:
II
II
i..-i-""
VCElsat) fiilICflB' 10
V
0.2
0.3
0.5 0.1
1.0
2.0
3.0
~
II
0.4
-
5.0 1.0
0.1
10
IC. COLLECTOR CURRENT (AMPERES)
V
~
VCE(sa,) fiillCflS " 10
~
o
0.1
11
V
0.2
0.3
0.5
1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMP)
4-8
5.0
10
2N3055 NPN/MJ2955 PNP
FIGURE 6 - COLLECTOR CUTOFF REGION·
NPN -2N3055
PNP -MJ2955
1000
10.00 0
VCE"JOV
VCE-JOV
1000
0
...z
I!iOaC
TJ
0
100
~
1
'"u=>
r-- loone
...c
u
w
I F REVERSE= i=' F'FORWARO
00 It=:
-
TJ" ISOaC
-
lOone
10
~
8
E=c 25• C
1-
000 1
·02
-01
-0 J
-01
-01
-04
REVERSE_ -..= I==fORWARO
-r 25• C
00 1
-02
-05
./
10
-0'
-0 J
-02
-01
-01
VBE. BASE EMITTER VOLTAGE IVOL TSI
-05
VBE. BASE EMITTER VOLTAGE IVOL TSI
FIGURE 7 - SWITCHING TIMES TEST CIRCUIT
FIGURE 8 - TURN-ON TIME
10
VCC
+30V
--
05
- ,.
~
RC
'~
02
SCOPE
RS
."-.
1~2N~55 '- i:'-
w
"
;::
I,
-
-
MJ2955
I
2N)~55
Id
005
51
VCC"JOV
ICIIB - 10
VSEI.II}" J'!,v.
-TJ"2.l.·C
MJ2955
Ir.II~10ns
OUTY CYCLE" 10%
·4 V
RB and Re VARIEO TO OSTAIN OESIREO CURRENT LEVElS
0.02
e.
00 1
0.1
01 MUST SE fAST RECOVERY TYPE.
M8D5300 USED ABOVE'S - 100 rnA
MSOG100 USEO BELOW IS "100 mA
For PNP Test Circuit,
Reverse All Polarities.
0.2
03
FIGURE 9 - TURN·OFF TIME
10
f--""-"2.0 ~
j
:E
;::
-
~
~-
- - ~::: r~-
I-
1.0
--
500
0-
-I
-
....
MJ2955
0.2
03
0.5
1.0
10
50
~ f.,j.
TJ" 25·C
~
Cib
"",
....
2N3055?
~
C,b
"
C.b
'-..,
200
'-,
C.b
MJ2955
"
- ~"
u'
I
...
100
.''MJ2955
O. 1
300
--
§
~
2NJ055
"
O. 2
30
z
.. ts.....
-
20
~
w
u
2~055
~-
U
0.5
0.1
VCC-JOV
ICIIB - 10
IBI =IB2
TJ =25·C
-
10
FIGURtE 10 - CAPACITANCE
700
f--.
50
05
IC. COLLECTOR CURRENT (AMP)
2.0
3.0
70 01
5.0
03
0.5
10
10
VR. REVERSE VOLTAGE IVOLTS}
IC. COLLECTOR CURRENT (AMP)
4-9
30
50
100
•
NPN
2N3055A . MJl5015
PNP
MJ2955A . MJl5016
COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS
15 AMPERE
· .. PowerBase complementary transistors designed for high power
audio, stepping motor and other linear applications. These devices
can also be used in power switching circuits such as relay or solenoid
drivers, dc·to·dc converters, inverters, or for inductive loads requiring
higher safe operating area than the 2N3055 and MJ2955.
•
• Current·Gain - Bandwidtti·Product
fT = 0.8 MHz (MinI - NPN
= 2.2 MHz (MinI - PNP
@
COMPLEMENTARY SILICON
POWER TRANSISTORS
50, 120 VOLTS
115,IBOWATTS
IC = 1 Adc
• Safe Operating Area - 'Rated to 60 V and
120 V, Respectively
*MAXIMUM RATINGS
Symbol
2N3055A
MJ2955A
MJ15015
MJ15016
Unit
Coliector·Emitter Voltage
VCEO
60
120
Vdc
Coliector·Base Voltage
VCBO
100
200
Vdc
Collector·Emitter Voltage Base
VCEV
100
200
Vdc
Rating
Reversed Biased
Emitter·Base Voltage
Collector Current - Continuous
VEBO
IC
7.0
Vdc
15
Adc
IB
7.0
Base Current
Total Device Dissipation@Tc
=.
25°C
PD
Derate above 25°C
Operating and Storage Junction
Adc
115
0.65
180
1.03
Watts
W/oC
DC
-65 to +200
TJ, Tstg
Lr~
r~K
ESEATlN/~
PLANE
I
Temperature Range
THERMAL CHARACT,ERISTICS
I
Characteristi'c
Svmbol
Thermal Resistance, Junction to Case
I
Max
I
I
Max
1.52
8JC
0.98
.
• Indicates JEDEC Registered Data (2N3055AI
,
FIGURE 1 - POWER DERATING
STYLE 1:
PiN 1. BASE
.2. EMITTER
CASE: COLLECTOR
, 200
~
z
;::
0
go
~0
ffi
~
150
---- "~
100
,
:;:
"-
I
5
,p
25
MJ15015
MJ15016
,""- ""-
2N3055A ......
MJ2955A
50
0
0
MILLIMETERS
DIM MIN MAX
............. r-....
w
...co
ffi
>
...
"-
Unit
°C/W
.............. ~
75
50
100
125
TC. CASE TEMPERATURE (OCI
......
150
~
175
200
4-10
INCHES
MIN MAX
-
--
-
-
39.37
A
1.550
21.0B
0.830
B
C 6.35
7.62 O. 50 0.300
1.09 0.039 0.043
D 0.99
E
3.43
0.135
F 129.90
30.40 1.177 1.197
G 11~.67
11.18 0.420 0.440
H 5.33
5.59 0.210 0.2 0
J 16.64 17.15 0.655 0.675
K I1.1B 12.19 0.440 0.480
n 3.84 4.09 0.151 0.161
R
26.67
1.1150
Collector connected to till.
CASE 11-111
(TO·3)
NPN 2N3055A, MJ15015
PNP MJ2955A, MJ15016
ELECTRICAL CHARACTERISTICS (TC =25°C unle" otherwi,e noted}.
I
Characteristic
Svmbol
Min
Max
Unit
60
-
Vde
OFF CHARACTERISTICS (11
·Collector-Emitter Sustaining Voltage
(lc
a
200 mAde, IB
=0)
2N3055A, MJ2955A
MJ15015, MJ15016
Collector Cutoff Current
(VCE
(VCE
= 30 Vde, VBE(offl =0 Vdel
= 60 Vde, VBE(off) =0 Vdel
·Collector Cutoff Current
(VCEV
=Raled Value, VBE(ofll = 1.5 Vdel
Collector Cutoff Current
(VCEV = Raled Value, VBE(offl
TC = 1500CI
= 1.5 Vde,
• Emitter Cutoff Current
(VEB = 7 Vde,lc =0)
VCEO(,usl
120
ICED
2N3055A, MJ2955A
III1J15015, MJ15016
2N3055A, MJ2955A
MJ15015, MJ15016
ICE V
2N3055A, MJ2955A
MJ15015, MJ15016
ICEV
2N3055A, MJ2955A
MJ15015, MJ15016
lEBO
-
mAde
-
0.7
0.1
-
5.0
1.0
mAde
30
6.0
mAde
-
-
5.0
0.2
mAde
'SECOND BR&AKDOWN
Second Breakdown Collector Current with Base Forward Biased
(t
=0.5, non·repetitive)
2N3055A, MJ2955A
MJ15015, MJ15016
(VCE = 60 Vdel
'ON CHARACTERISTICS (1)
DC Current Gain
10
20
5.0
Collector-Emitter Saturation Voltage
VCE(,at)
(lC = 4.0 Ade, IB =400 mAde)
(lC = 10 Ade,IB = 3.3 Ade)
(lC = 15 Ade,IB = 7.0 Ade)
Base-Emitter On Voltage
(lC
-
hFE
(lC =4.0 Ade, VCE = 2.0 Vde)
(lc = 4.0 Ade, VCE = 4.0 Vdel
(lC = 10 Ade, VCE = 4.0 Vdel
70
70
-
Vde
-
1.1
3.0
5.0
VBE(on)
0.7
1.8
Vde
fT
OB
6.0
18
MHz
2.2
Cob
60
600
pF
td
-
0.5
/JS
4.0
/J'
=4.0 Ade, VCE = 4.0 Vdc)
'DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 1.0 Ade, VCE = 4.0 Vde, f
= 1'.0 MHz)
2N3055A, MJ15015
MJ2955A, MJ15016
Output Capacitance
(VCB
= 10 Yde, IE =0, f = 1.0 MHz)
'SWITCHING CHARACTERISTICS (2N3055A only)
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30 Vde, IC = 4.0 Ade,
IBl = IB2 = 0.4 Ade,
tp = 25 /JS DUlY Cycle .. 2%)
tr
I,
tf
(1) Pulse Test: Pulse Width = 300 1", Duty Cycle .. 2%.
"Indicate, JEDEC Registered Dala (2N3055A)
4-11
-
3.0
I'S
6.0
1"
NPN 2N3055A, MJ15015
PNP MJ2955A, MJ15016
FIGURE 3 - COLLECTOR SATURATION REGION
FIGURE 2 - DC CURRENT GAIN
-
200
-
- r-.
100
70
z
:;;: 50
~
'"
a'"
'"c
•
~
30
25°
«
..........
!:;
>
~
~
1,\
VCE'4.0V
10
0.8
\
8
0.4
~
>
0.3
10
0.5 0.7
IC. COLLECTOR CURRENT (AMP!
15
~
"
I-- TC = 25°C
~
0.2
-
=>
g
5.0
./"
~
w
to
_......
vc~(..ti@ I~II~ 2,~
I
0.3
0.5
I
I
1
z
.'"~"
~
V
:;;:
-l-
MJ2955A
t
'5
°1&
--
2N3055A
MJ15015
1.0
I
5
10
20
'"
.i-
0.1
0.2
0.3
0.5
IC. COLLECTOR CURRENT (AMPSI
l-
1.0
2.0
FIGURE 7 - TURN-ON TIME
FIGURE 6 - SWITCHING TIMES TEST CIRCUIT
(Cin:uit shown is for NPNI
0
7=VCC=30V
5 ICIIS' 10
)J' 250 C
Vee
=
+30 V
3
Scope
]
w
'"
;::
~.
10 ns
Outy Cycle = 1.0%
O.S
=>
IC. COLLECTOR CURRENT (AMP!
t r • tf <;
0.2
~
~ 2.0
V
VSE(on!IilVCE-4V ; '
0.7
0.1
10
If
VSE(satl@IClis' 10
0.05
0.02
t;
~
0.5
-
FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 4 - "ON" VOLTAGES
,;
"
0
0.00, 0.01
--
IS. 8ASE CURRENT (AMP)
3.5
1.5
"-
\.
j
0.2
o
1.2
~
8A
4A
0:
7
2
'">
'c' 1 A
'" 1.&
"\.
~
TJ' 25°C
c
.......
20
2.5
S
c
TTT
..'"
~ 2.4
~Soc
to
....
g 2.8
TJ -150°C
2
!.-
1
O.7
O.5
0.3
O.2r-
-- -
;;7
Id
-5 V
O. 1
0.2
4-12
0.3
0.5 0.7
'C.,cOLLECTOR CURRENT (AMP)
7· 10
15
NPN 2N3055A, MJ15015
PNP MJ2955A, MJ15016
FIGURE 9 - CAPACITANCES
FIGURE 8 - TURN·OFF TIMES
400
10
t;::.
200
'.
J...
.:
D. 7=VCC=30
D. S -Iclla = 10
-lal =la2
D. 3 - Tf 2SDIC
D.2
D. 1
0.2 0.3
Cib
f-.
......
:::.. ~
lf
1;:: D.
:E
TJ = 25 0 C
f- 2N3055A
MJI5015
Ill!
t- "t-.... t'-
,/
II
1111
i'. ,t' ~t-.
MJ2955A
MJ15016
100
0
"10
O.S 0.7
IC. COLLECTOR CURRENT (AMPS)
NPN
FIGURE 10 - 2N3055A. MJ15015
Cob
0
20
IS
2.0
1.0
5.0
10
20
50
100
SOO
200
1000
VR. REVERSE VOLTAGE (VOLTSI
COLLECTOR CUT·OFF REGION
PNP
FIGURE 11 - MJ2955A, MJ15016
10.000
VCE = 30 V
.
,..""
1
zw
u
.."j""
1000
..
i
100
- TJ •
150DC
r-
l00DC
=
10
0
0.1
I-
-
~
FORWARO
REVERSE
1.0
==
lOOne
8 0.1 = REVERSE","" """'F'-FORWARO
IC = ICES
0
~
~
./
1.0
u
0
B
0.01
r- ----t- 2S C
0.01
- IC = ICES
=1= 25 DC
D
+0.1
-til.2
-0.1
-0.2
·0.3
-0.4
0.001
·0.2
·0.5
+0.1
-0.1
i1!
:E
.
--
.... !'
10
f-o--
"
~
1--",
r-,
5
......
iii
ll:
B
1',
""0
~
----Bonding Wire limit
p
-- -
....
-til.4
+0.5
' ' ..
'.
"
....
'" 2.0
de
~
1-
8
W
1.0ms
i": "'-
'-
ttJ
--
Bonding Wire limit
Thermal limit fill TC = 250 C (Single Pulse)
- - - 1 - - Second Breakdown limit
100....
EO. 5 =
I
I
...
o
100m'
0.1 ms·
"
'"
~
B
1 I I
M
::"
.. S. 0
lm,-
- - Thorm.1 Limilli> TC = 2S oC (Sinili Puli)
Second Breakduwn limit
10
.....
0
5
lOOp'
...
0
u
0:
~,
.... I....
........
0
. - 3~!,
.1
~,
-til.3
FIGURE 13 - FORWARD BIAS SAFE OPERATING AREA
MJ15015, MJ15016
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
2N3055A, MJ2955A
20
-til.2
VaE. BASE·EMITTER VOLTAGE (VOLTS)
VSE. BASE·EMITTER VOLTAGE (VOLTS)
0.2
15
100
20
30
60
de_
100120
VCE. COLLECTOR·EMITTERVOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTERVOLTAGE (VOLTS)
Ther. are t'NO limitations on the power handling ability of. transistor:
_age junction temperature and second brea_. Sale Operating ara.
e"MII indicate le,VCE limits of the transistor that mull be _MId for
reliable operation; i .•.• the tranllistor must not be subjected to grelter
dissipation than the curvas indicate.
The dot. 01 Figures 12 .nd 13 i8 b..... on Te = 25"C; TJII*I is ••riabla
depending on power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated for temperature according to Figura 1.
4-13
•
2N3441
3 AMPERES
•
NPN SILICON POWER TRANSISTOR
NPN SILICON
POWER TRANSISTOR
· .. 2N3441 transistor is designed for use in general·purpose switching
and linear amplifier applications requiring high breakdown voltages.
It is characterized for use as:
140 VOLTS
25 WATTS
•
Driver for High Power Outputs
• Series and Shu!]t Regulators
• Audio and Servo Amplifiers
• Solenoid and Relay Drivers
• Power Switching Circuits
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
140
Vdc
Collector-Base Voltage
VCBO
160
Vdc
Emitter-Base Voltage
VEBO
7
Vdc
IC
3
Adc
Base Current - Continuous
IB
Total Power Dissipation @TC - 25°C
Derate above 2SoC
Po
2
25
0.142
Watts
W/oC
TJ. T,t9
-65 to +200
°c
Collector Current
Continuous
Operating and Storage Junction
Temperature Range
---F--
Adc
THERMAL CHARACTERISTICS·
Characteristic
Thermal Resistance. Junction to Case
I
Symbol
ROJC
I
Max
7
I
Unit
°C/W
STYLE I:
PIN 1. BASE
2.EMIITER
CASE: COLLECTOR
MILLIMETERS
DIM MIN MAX
B 11.94 12.70
C
6.35 8.64
0
0.11 0.86
1.27 1.91
E
F 24.33 24.43
G 4.83 5.33
H 2.41 2.67
J 14.48 14.99
K
9.14
P
1.27
n 3.61 3.86
S
8.89
T
3.68
U
15.15
INCHES
MIN
MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.152
0.350
0.145
0.620
-
All JEDEC Dimensions and and Notes Apply.
CASEIO.Q2
TO·66
4-14
2N3441
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted I
Characteristic
Symbol
Min
VCEO(susl
140
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC
= 100 mAde. 18 = 01
Collector Cutoff Current
IVCE
mA
mA
ICEX
= 140 Vde. V8Eloffi = 1.5 VI
= 140 Vde. V8Eloffi = 1.5 V @ 1500 CI
-
Emitter Cutoff Current
IVSE
100
ICEO
= 140 Ade. 18 =01
Collector, Cutoff Current
IVCE
IVCE
Vde
5.0
6.0
1.0
lEBO
mA
= 7.0 Vde.lc =01
ON CHARACTERISTICS
DC Current Gain (1
-
hFE
J
IIC =0.5 Ade. VCE = 4.0 VI
IIc = 2.7 Ade. VCE = 4.0 VI
Collector-Emitter Saturation Voltage (1)
IIC = 2.7 Ade. 18 = 0.9 Adel
Base-Emitter On Voltage (1)
(lC = 2.7 Ade. 18 = 4.0 Vdel
25
5.0
100
VCEls"tl
-
6.0
Vde
VBElonl
-
6.0
Vde
hfe
15
75
--
Ihfe l
5.0
-
DYNAMIC CHARACTERISTICS
Current Gain
. Small-Signal
IIC = 0.5 Ade. VCE = 4.0 Vde. f test = 1 kHzl
Small·Signal Current Gam
(lC
=0.5 Ade. VCE = 4.0 Vde.
f test
=0.4 MHzl
FIGURE 1 - ACTIVE·REGION SAF.E OPERATING AREA
10
a le max (PulsedJ-
4.
0: 3 0
...z"
:;
~
J.r
$a'~"Il2?."J'
'12 '$;= t!1"~d- $Qj:
C?-?].,
"'.r "-'.I'
lemaK (Continuous)
~,
=
"= 1. 0
=
~ O. 5
o
u
4,r
'~Q~~;"=
..... •
't- ... i" I"
:0...
~
...... -'f.:-
Second BreakdDwn Limit
r-
Thermal Limit@Tc = 25 0 C -
I
0.1 2.0
3.0
I I I I III
5.0 1.0
10
I
There are two limitations on the power-handling ability
of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the
transistor that must be observed for reliable operation, i.e.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
"(he data of Figure 1 IS based on T J(pk) = 2000 e; T e is
variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.
.
--_o-
f--
2 0.2 t-- Bonding Wire Limit
..-...
~
- -
<
I
20
30
50
10
100
140 200
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS}
4-15
•
2N3442
2N4347
5.0 AND 10 AMPERE
POWER TRANSISTORS
NPN SILICON
HIGH-POWER INDUSTRIAL TRANSISTORS
•
120, 140 VOLTS
100, 117 WATTS
NPN silicon power transistors designed for applications in
industrial and commercial equipment including high fidelity audio
amplifiers, series and shunt regulators and power switches .
•
Low Collector· Emitter Saturation Voltage -.
VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc - 2N4347
•
Collector· Emitter Sustaining Voltage VCEO(sus) = 120 Vdc (Min) - 2N4347
140 Vdc (Min) - 2N3442
•
Excellent Second·Breakdown Capability
C(~~~.
~
'MAXIMUM RATINGS
Ln='::J~
r~K
SEATIN(-~ !
E
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emltter·Base Voltage
Collector Current - Continuous
Svmbol
2N4347
2N3442
Unit
\lCEQ
VCB
120
140
Vdc
160
Vdc
140
IC
5.0
10
10
15"
Adc
'B
3.0
8.0
7.0
Adc
PD
100
0.57
117
0.67
Peak
Base Current - Continuous
Peak
Total Power DIssipation @ T C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Vdc
7.0
VEB
-
-65 to +200
TJ, Tst9
PLANE
Watts
W/oC
STYLE 1:
PIN 1. BASE
°c
2. EMITTER
CASE: COLLECTOR
DIM
A
B
THERMAL CHARACTERISTICS
C
0
Characteristic
Thermal Resistance, Junction to Case
Symbol
2N4347
ROJC
1.75
2N3442
1.5
Unit
E
°C/W
F
G
H
J
K
·'ndicates JEDEC Registered Data.
uThrs data guranteed In addition to JEDEC registered data.
n
R
MILLIMETERS
MIN MAX
39.37
21.08
1.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67 11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
II.1B 12.19 0.440
3.84
4.09 0.151
26.67
Collector connected to case
CASE 11·01
-
-
6.35
0.99
(TO·l)
4-16
INCHES
MIN
MAX
1.550
0.830
0.300
0.043
0135
1.197
0.440
0.220
0.675
0.4BO
0.161
1.050
2N3442, 2N4347
ELECTRICAL CHARACTERISTICS (TC
=25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
120
140
-
-
200
200
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC
2N4347
2N3442
Collector Cutoff Current
(VCE
(VCE
2N4327
2N3422
-
= 125 Vde, VeE(offl = 1.5 Vde!
= 140 Vde, VeE(off! = 1.5 Vde!
= 120 Vde, VeE(ofl) = 1.5 Vde, TC = 150°C!
= 140 Vde, VeE(ofl) = 1.5 Vde, TC = 150°C!
= 7.0 Vde,
IC
mAde
ICEX
-
2N4347
2N3442
2N4347
2N3442
Emitter Cutoff Current
(VeE
mAde
ICED
= 100 Vde, Ie =0
= 140 Vde,le =0)
Col tector Cutoff Current
(VCE
(VCE
(VCE
(VCE
Vde
VCEO(sus)
=200 mAde, Ie =0)
-
2.0
5.0
10
30
-
5.0
15
10
20
7.5
60
-
1.0
2.0
5.0
mAde
IEeO
=0)
2N4347,2N3442
ON CHARACTERISTICS (I)
DC Current Gain
(lC
(lC
(lC
(lC
2N4347
2N4347
2N3442
2N3442
Collector-Emitter Saturation Voltage
(lC
(lC
(lc
70
Vde
VCE(sat!
=2.0 Ade, Ie =200 mAde!
= 5.0 Ade. Ie =0.63 Ade!
= 10 Ade, Ie =2.0 Ade!
2N4347
2N4347
2N3442.
Base-Emitter On Voltage
(lC
(lC
(lC
-
hFE
=2.0 Ade, VCE = 4.0 Vde!
=5.0 Ade, VCE = 4.0 Vde!
=3.0 Ade, VCE =4.0 Vde)
= 10 Ade, VCE =4.0 Vde)
-
-
Vde
VeE(on!
=2.0 Ade; VCE = 4.0 Vde!
=5.0 Ade, VCE = 4.0 Vde!
= 10 Ade, VCE =4.0 Vde)
-
2N4347
2N4347
2N3442
2.0
3.0
5.7
-
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product 12)
(lC
(lC
2N4347
2N3442
Small-Signal Current Gain
(lC
(lC
kHz
fT
=0.5 Ade, VCE =4.0 Vde, fteS! = 50 kHz!
=2.0 Ade, VCE =4.0 Vde, fteS! = 40 kHz!
200
80
-
40
12
-
=0.5 Ade, VCE = 4.0 Vde, f = 1.0 kHz!
=2.0 Ade, VCE = 4.0 Vde, f = 1.0 kHz!
2N4347
2N3442
• Indicates JEDEC Registered Data
NOTES: 1. Pulse Test: Pulse Width
2. fT = Ihfel • f test
= 300 ~s,
Duty Cycle .. 2.0%.
FIGURE 1 - POWER DERATING
§
10
1""-
N
:::;
":5'" 0.8
"" "'" "'-
'"
z
o
E0.6
iii
c
a:: 0.4
~
~
~
"
~
~
0.2
I--- _
0
o
2~
..
"'"
"'" ""-
- - I---
~o
7~
100
12~
Te. CASE TEMPERATURE IOC)
4-17
-
hf~
I~O
"17~
"
200
72
•
2N3442, 2N4347
ACTIVE REGION SAFE OPERATING AREA INFORMATION
FIGURE 2 - 2N3442
20
10
70
50
0:
"'...."
;0
~
•
"
'"
20
"'
~
50/.1$
de
30
"'
B
TJ ~ 200°C
10
8.
10 ~s
730.,
,~
"
-
f=
07
f::
I-
:3 05
r-
03
02
, 2,0
I
30
\;~.,
l.Om$-
\.
100 ms
-
-
I I I I I II
CURRENT LIMIT
THERMAL LlMIT@ TC ~ 25°
SINGLE PULSE
SEfONi
BRE~KO~W~ L:M~TI
-
r-There are two limitations on the power-handling ability
L
50 ) 0 10
20
30
50 70 100
VCE. COLLECTOR,EMITTERVOLTAGE (VOLTSI
of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ie-VeE limits of the
transistor that must be observed for reliable operation, i.e.,
the transistor must not be ,subjected to greater dissipation
than the curves indicate.
The data of Figures 2 and 3 is based on TJ(pk);;:: 200°C; TC
is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations Imposed by second breakdown.
200
FIGURE 3 - 2N4347
0
0
0
JOps
50ps
100p.s
1~llom'
de
1\
100 ms
TJ~2000C
7
5
- - -
CURRENT LIMIT
- - - - - -- THERMALlIMIT@TC·25OC
. SINGLE PULSE
SECOND BREAKDOWN LIMIT I
-
3
2
2,0
3,0
I
1L
Ll J10I
0, 1
i-
r--
5,0 7,0
50 70 100
20
30
VCE. COLLECTOR,EMITTER VOLTAGE (VOLTS)
200
FIGURE 4 - DC CURRENT GAIN
400
r--
T~~i500C
--r--.:
200
FIGURE 5 - COLLECTOR-SATURATION REGION
1.4
~
VCE· 4,0 V
0
~
....
z
;;: 100
2Ke
....
'"
'"
=>
..,..,
40
'"
......
~
'-'i'.
~ 20
.l!-
r--- 2.0A
~
'"
0
r-..
10
0,3
B.OA
r---
0.6
'-
0.4
"
TJ·2SoC
8
0,2
-
1.0
~ 0.2
6.0
4,0
0,1
4,OA
'"<
!:;
0
> 0,8
-55°C
~ 60
l
1.2 f- IC·1.0A
0,5 0.7 1.0
2.0 3.0
IC. COLLECTOR CURRENT IAMPI
5.0
~
>
7.0 10
4-18
0
2.0
5.0
10
, 20
50
100
200
lB. BASE CURRENT ImA)
SOO
1.0k
2.0k
2N3442, 2N4347
FIGURE 7 - COLLECTOR CUTOFF REGION
FIGURE 6 - "ON" VOLTAGE
8
2. 41---
-
TJ = 25°C
~10k
2. 0
§
'"'"
~
~1 6
w
~ 1. 2
~
c
>. O. 8
I-- VB Ehal, @ IC/IB = 5.0
:>
o. 4
)- VBE(on,@VCE = 4.0 V
I
)- VCE(.",
01
0.2
I
03
I
I
IC/lB=I~p
I
a 100
,
I--:::
<.J
~
50
10
~~1000C
10
f"ii" RE'
1_-+_
II
i
0.5 07 1.0
20
30
IC. COLtECTOR CURRENT (AMP)
_
50
k::
FT '150oC
I
Y
10
-02
10
'ORWARD
ERSE
DC
-01
tal
.02
+03
VBE. BASE EMITTER VOLTAGE (VOLTS)
FIGURE 8 - CAPACITANCE
1000
700
~ 500
w
u
z
;: 300
;:;
It
~ 200
u
-
TJ = 25°C
--
100
0.1
Cob
..............
.......
,"
Cob
0.2
0.5
1.0
2.0
50
10
VR. REVERSE VOLTAGE (VOLTS)
4-19
""
20
50
100
+04
'05
•
2N3445
thru
2N3448
HIGH-SPEED SILICON ANNULAR*
NPN POWER TRANSISTORS
7.5 AMPERE
· .. for switching and amplifier applications
POWER TRANSISTORS
SILICON NPN
FEATURES
Fast S,:"itching: Total Switching Time =1.21ls (Typ) @ 5.0 A
High Gain: HFE = 40 to 120 @ 5.0 Amps (2N3447-48)
Guaranteed DC Safe Area: 1.5 Amps (Min) @ VCE = 40 Vdc
Low VCE(sat): 1.0 Volt (Typl. 1.5 Volts (Max) @ 5.0 Amps
Excellent Beta Linearity
•
•
•
•
•
60-80 VOLTS
115 WATTS
APPLICATIONS
•
•
Specified safe area of this series allows reliable design for inverters,
converters, hammer, and servo drivers.
• Fast response makes it ideal for series regulators; high switching
speeds enhance its use in switching regulators.
• Wide bandwidth and flat beta hold-up result in exceptional ampli·
fier characteristics.
MAXIMUM RATING
Rating
Symbol
2N3445
2N3447
2N3446
2N3448
Unit
80
Vdc
VCEO
60
Collector-Base Voltage
VC8
80
100
Vdc
Emitter-Base Voltage
VEB
IC
6.0
10
Vdc
Collector-Emitter Voltage
Adc
Adc
Base Current - Continuous
IB
7.5
4.0
Total Device Dissipation
Po
Figur. 1. 2 Figur. 1.3
Watts
Operating Junction Temperature
TJ
-65 to +200
DC
Collector Current-Continuous
Range
FIGURE 1 - POWER DERATING CURVE
[n[,,'i~111+tD
o
25
50
75
100
125
T., CASE TEMPERATURE (OC)
150
175
200
STYLE 1:
PIN 1. BASE
2. EMITIER
CASE: COLLECTOR
MILLIMETERS
DIM MIN MAX
A
B
C
D
E
F
G
H
~
These tran,lltor. are allo subject to I8fe area curves 8. Indicated by Flgur.2,
K
D
3. Both limits are applicable end mUlt be observed.
R
• Annular SemicondUctor. Patented bV Motorola Ine.
NOTE:
1. OIM "Q"IS DlA:
INCHES
MIN
MAX
-
-
39.37
1.550
21.08
- 0.830
7.62 0.250 0.300
1.09 0.039 0.043
- 3.43 - 0.135
30.40
1.177 1.197
ZS.90
10.67 11.18 0.420 0.440
5.33
5.59 0.210 0.220
16.64 17.15 0.655 0.675
11.18 12.19 0.440 0.480
3.84
4.09 0.151 0.161
26.67
1.050
Collector connected to case•
6.35
0.99
CASE 11'()1
(TO-3)
4-20
2N3445 th ru 2N3448
ELECTRICAL CHARACTERISTICS
(TC = 25°C unle•• otherwl.e noted)
Characteristic
Emitter-Base Cutoff Current
(VES = 6 Vde)
(VES = 10 Vde)
Collector-Emitter Cutoff Current
(VCE = 60 Vde, VSE = -1 Vde)
(VCE = 60 Vde, VSE = -1 Vde, TC = 150°C)
(VCE = 80 Vde, VSE = -1 Vde)
(VCE = 80 Vde, VSE = -1 Vde, TC = 150°C)
Collector-Emitter Cutoff Current
(VCE = 40 Vde, IS = 0)
(VCE = 60 Vde, IS = 0)
Collector-Base Breakdown Voltage
(lC = 1 mAde, IE = 0)
Collector-Emitter Sustaining Voltage
(lC = 100 mAde, 16 = 0)
DC Current Gain
(lc = 0.5 Ade, VCE
2N3445,2N3447
2N3446, 2N3448
ICEX
2N3445,2N3447
2N3445,2N3447
2N3446, 2N3448
2N3446, 2N3448
-
-
0.25
0.25
-
-
0.1
1.0
0.1
1.0
-
-
-
-
-
80
100
-
60
80
-
-
-
20
40
20
40
45
85
40
75
-
60
120
-
0.6
0.8
1.5
1.5
-
1.0
1.0
1.5
1.5
-
1.0
1.0
1.5
1.4
mAde
ICEO
-
-
2N3445,2N3447
2N3446, 2N3448
-
VCEO(.u.)
hFE
2N3445, 2N3446
2N3447,2N3348
1.0
1.0
Vde
SVCSO
Collector-Emitter Saturation Voltage
(lc = 3 Ade, 16 = 0.3 Ade)
(lC = 5 Ade, 16 = 0.5 Ade)
-
-
-
Vde
V6E(sad
V8E
2N3445, 2N3446
2N344 7, 2N3448
Vde
hfe
2N3445, 2N3446
2N3447, 2N3448
All Types
Common Base Output Capacitance
(VCS = 10 Vdc, f = 0.1 MHz)
-
-
20
40
1.0
1.6
-
-
260
400
-
0.15
0.9
0.15
0.35
2.0
0.35
-
100
200
pf
Cob
All Type.
Switching Times
(VCC = 25 Vde, RL = 5 ohms, IC = 5 A,lSl
Oelav Time plus Ri.e Time
Storage Time
Fall Time
-
Vde
2N3445, 2N3446
2N3447,2N3338
= 10 Vde, IC = 0.5 Ade, f = 10 MHz)
Vde
-
VCE(sad
Base-Emitter Saturation Voltage
(lC = 3 Ade, 16 = 0.3 Adc)
(lC = 5 Ade, IS = 0.5 Ade)
Sose-Emltter Voltage
(lC = 3 Ade, VCE = 5 Vde)
(lC = 5 Ade, VCE = 5 Vde)
Small Signal Current Gain
(VCE = 10 Vde, IC = 0.5 Ade, f = 1 KHz)
Unit
mAde
-
2N3445,2N3447
2N3446, 2N3448
= 5 Vde)
Max
-
-
2N3445, 2N3447
2N3446, 2N3448
= 3 Ade, VCE = 5 Vde)
= 5 Ade, VCE = 5 Vde)
(VCE
Typ
mAde
IESO
2N3445, 2N3446
2N3447, 2N3448
2N3445, 2N3446
2N3447,2N3448
(lC
(lC
Min
Symbol
= IS2 =0.5 A)
ld+tr
t.
tf
'"
SAFE OPERATING AREAS
F1GURE 2 - 2N3445, 2N3447
10
7.0
5.0
""- ""..JI
3.0
2.0
DC
........
Smsec-
1.0
0.7
0.5
~
FIGURE 3 - 2N3446, 2N3448
,.,
\
-
'"
......
rOC ......
!; "nsec)!..
"- .---- " .\
~
Imsec
Imsec
O.Smsec
-"2S0PSec~
0.3
0.2
.
0.1
T,-,17SoC
Eo
0.07
- - - TJ .2S oC
0.05
0.01 fL.._..&.._....I___.&.._...I._ _"-_..l1
o
10
20
30
::
;~2SI;.:cI'
T, -175°C
- - - TJ 25°C
1
(
40
50
60
o 10 20 30
Veo , COLLECTOR-EMITTER VOLTAGE (VOLTS)
4-21
40
50
60
70
80
The Safe Operating Area
Curves indicate IC - VCE
limits below which the de- '
vice will not go into secondary breakdown. Collector
load lines for specific circuits must fall within the
applicable Safe Area to
avoid causing a collectoremitter short. (Duty cycle
of the excursions make no
signifiCant change in these
safe areas.) To insure operation below the maximum
TJ, the power-temperature
derating curve must be observed for both steady state
and pulse power conditions.
•
2N3445
t~ru
2N3448
FIGURE 6 - BASE-EMITTER SATURATION
VOLTAGE VARIATIONS
FIGURE 4 - BASE CURRENT-VOLTAGE VARIATIONS
300
200
I
100
:< 70
oS 50
~=>
-
1= ~~h6It'
JI I 1'1111
le=3A
I~~IA
r-I.IIJ
Ic= 0.3A
-
.-
~
'":::>
!,Ill \~ I~ SA- f--
.
0.6
~
ffi
:=
0.4
:;;
~
~
I
3
•
0
/ _40°C
+ 175 0 C / +25°C /
0.8
z
I
10
7
5'
'"
1.0
'"'"«
I
20
u
2-
:>
/
/
30
'"~
0
!:i
0
I-
~
!:i
'l
/
Va = 5V
u; 1.2
//
./
>.
'"
I I
2
II L
I
0
-J
0.6
0.8
0.4
V", BASE-EMITTER VOLTAGE (VOLTS)
0.2
. 0.2
~
."
1.0
10
1.2
20
50
lOa
200
500 1000
I" BASE CURRENT (mA)
FIGURE 5 - COLLECTOR CURRENT-VOLTAGE VARIATIONS
~
10
7.0 f=:V e,
5.0
ie
:s
:;;
3.0
i
I-
2:0
:=
=>
oe
1.0
~
0.7
0.5
u
0
u
5V
/
./
/ ..
LI
. +175 C / +25°C
I
'0
0.2
0
I-
fil
' 1.0
M
0.6
0.8
VIE, BASE-EMITTER VOLTAGE (VOLTS)
VCEO
g
..E
2.0
u
1---t-t'+t+1+H---+-+-H-ttttt-++++tHtl
10
!:i
I
I
..
/
.'
I
20
50
lOa
I,. BASE CURRENT (mA)
0
200
500 1000
IT JI =lll'z'516~
2-
'"
«
'"
1.0
!:i
0
:>
175°C -
f-::-
100°C..., ~25~C
;
I
z0
0.8
~
0.6
.~:=
0.4
'"
0.2
S·
'":::>
le=3A-
le- IA
ffi
./
1.0
0.5
0.2
= 0.3 A-H++1H+--+--+-++t+++t--+-t-I-t1fttH
1.4
1.2
20V
10
5.0
1---+-++I-t+H+--+-+-l-+++++t--+-++I-t+tH
Ie
A
-J
50
20
0.4
~
I-
~
~-
0.8
u; 1.2
=Ve,
=>
u
oe
0.6
'"
1000
500
200
:<
.5 lOa
~
~
I
0.1
II
-r-!.IJ W"i:::;=I'=~le..f=.f3A+tHi'I"""=;-+t+HttI
I T~ ~ 25 61:1)
IIII
I--+-H'H'H-'tiII'-tt-'-t-+++ti Ie = SA ~F+-I:::I+If+l
!
~
I
I
I
0.2
II
-40°C
0
.2 0.3
/
/
1.2
1.0
2-
1/
REVE.RS~~ ~~ORWARD
0.2
I I
I y0.1
-0:6...,.0.5-0.4 '-0.3 "-0.2 -0.1 O' 0.1 0.2 '0.3 0~4' 0.5 0.6'
V", BASE-EMITTER VOLTAGE (VOLTS)
-,- Ie =
0.311
c
1
-J
50 '100
I" BASE CURRENT (mA)
200
500 1000
2N3445 thru 2N3448
FIGURE 7 - COLLECTOR-EMITTER SATURATION VOLTAGE VARIATIONS
~
g
'"
'"
""
1.4
II
Ileld~A
!:;
0
>
z
0
1.0
'"=>
0.8
;:;
~
I
,
I'" I--
......
¥
~
f:i
I
III
1.2
I
I I
\
\
~r'le ~ ~A
\
\
\
,
I
I
\
,
le=3A
1
0.6
A
AS.,_
:E
~
....
0.4
0
0.2
0
~
'-'
:;
J
II
TJ = -40°C
~
is
1.0
.~
~
,
~
,
I,
g 1.4
I
0
~
'"
'"~
>
z
0
1.0
~
=>
!C 0.8
'"
'"
i::
ii
0.6
"I
0
'"
....
~
0.4
'-' 0.2
1
oJ
I
I~A
1.2
0
I
.1.
,
,,
"
""
---
........
\
.......
...
TJ = 175°C
----2N3445,2N3446
---2N3447,2Nj448
~
70
200
100
,,~
300
,
,
\
- :----- -- - '-
I
1000
i:"'" le=3A
\..
i"-
50
70
30
20
I" BASE CURRENT (rnA) .
4-23
)
700
i"',
-~.
10
500
"
'" "
...
...... .....
-
'\
,
"
.~
.... "- .....
-F
I""......
\.
\
r-.,
'" -
...
'\.
1000
Ie = SA
~
I',
~.
-"'1\
\
!
700
I II
\.
\.
r--
I
~
.....
500
\. (\,
\
I
\
i-'"
~~
\.
20
30
50
I" BASE CURRENT (rnA)
II: = IA
\1\
\
\
-----
II
I
le= 3A
y
V
\
'. ,
300
\-.
'~
-
200
\
\
,
100
\
\
\
10
70
Ie = 5A
a--
!"-.,
--
:::'1::::,
1
"
~
TJ = 25°C
\
-2N3445,2N3446
---2N3447,2N3448
- -
le;:_:A,
\
\
I
0.6
0.2
,
~
I
:E
o
r-_
\
- .\
I
le=~A
......
30
20
50
I" BASE CURRENT (rnA)
I'
0.8
o~ 0.4
'-'
['....
I I
~
§!
~
=>
....
!
"- !"'....
"
\..
10
1.2
UJ
,
1\
\
0
g
\t-
\..
1\
-2N3445,2N3446
---2N3447,2N3448
~ 1.4
1\
\\
'.\
',\
\
\
\
I--r- ___
100
200
300
500
700
1000
•
2N3445 thru 2N3448
FIGURE 8 - COLLECTOR CURRENT versus BASE CURRENT
10
10
-=
5.0
I
~
'"
0
~
8
.,g
a
2N3446
5.0
- IVeE 5 V
~ 2.0
:s
'"
17N1441;
1.0
/
:5°C
0.1
I
2.0
...
1.0
~
'"""'"
0
'"
0.5
0:2
~
:s
'"
f-+ ;5'
/
~
8
' -4Jol
r=
2N3447,2N3448
5V
I - VeE
A-"?
+25°C
0.5
/
0.2
+ 175°C
-40°C
/
0.1
.,g
0.05
0.05
1/
0.02
0.02
0.01
0.01
0.1 .0.2
0.5 1.0 2.0 5.0 10 20
50 lOa 200
I•• BASE CURRENT (mAl
I
0.1 0.2
500 1000
0.5 1.0 2.0
5.0 10 20
50 100 200 500 1000
I•• BASE CU RRENT (rnA)
FIGURE 9 - CURRENT GAIN VARIATIONS
50
40
z:
-
u
10
700
C,b
500
r...
0
u
20
floill'
20V
VCEO
.5
200
1.5
"-
FIGURE 13 - COLLECTOR·EMITTER LEAKAGE CURRENT
varsus BASE·EMITTER RESISTANCE
WOO
....
\
1.0
0.1
..
I
In( 1- 0.91 P,/Ilo
J J)
\
\
",.
o
15
=
Ilo
0.91l,
w
"
20
500
2.0
...
;::
""
\.
30
\
\
~
>
~
= 25°C
= TARIl,--
t;'"
0
~
R
1 __
\
0
...~
900 n
_ 1.7
:--
50
!....
z:
r;;z:
...u
;::
""
z:
+30V
AT POINT A
4
z:
X
I- I" -
~
OV
5
300
i"'-...
200
TJ
=
!OOOe
100
10
100
1000
io,ooo
100,000
R", EXTERNAL BASE·EMITTER RESISTANCE (OHMS)
4-2.5
0.1
0.2
0.5
5.0 10
1.0
2.0
JUNCTION VOLTAGE (VOLTS)
20
50
100
2N3583 thru 2N3585, 2N4240
2N6420 thru2N6423 PNP
NPN
1.0 AND 2.0 AMPERE
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE
POWER TRANSISTORS
•
POWER TRANSISTORS
COMPLEM ENTARY SI LICON
25D-5oo VOLTS
35 WATTS
· .. designed for high·speed switching and linear amplifier applica·
tions for high·voltage operational amplifiers, switching regulators,
converters, inverters, deflection stages and high fidelity amplifiers.
•
Collector· Emitter Sustaining Voltage VCEO(sus) = 175 to 300 Vdc @l IC = 200 mAdc
•
Second Breakdown Collector Current Islb = 350 mAdc@l VCE = 100 Vdc - NPN
= 150 mAdc @l VCE = 100 Vdc - PNP
•
Usable DC Current Gain to 2.0 Adc
Symbol
Rating
Collector-Emitter Voltage
VCEO
COllector-Base Voltage
Vce
Emitter-Base Voltage
VEe
Collector Current
Continuous
IC
Peak (11
Base Current
Ie
Total Power Dissipation
Po
@TC= 25 DC,
Derate above 25°C
Operating and Storage Junetion Temperature Range
1=:'=
p
it-- -------
*MAXIMUM RATINGS
TJ,Tstg
2N3583 2N3584 2N3585 2N4240
2N6420 2N6421 2N6422 2N6423
175
.
250
1.0
5.0
.
...
.
250
300
300
Vdc
375
500
500
Vdc
6.0
..
...
2.0
5.0
Vdc
Adc
Adc
1.0
...
35
0.2
..
-65 to +200
Watts
Characteristic
°C'
I
Symbol
I
Max
I
Unit
I
R8JC
I
5.0
I
°CIW
-Indicates JEDEC Registered Data
(11 Pulse Test: Pulse Width = 5.0 ms, Duty Cycle .. 10%.
E
I SEATING PLANE
ST~I~ErBASE '
--,
K
0
I
--- F--
2. EMITTER
CASE: COLLECTOR
a
L-K:)---1t_~ct
H
W/DC
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
t t
Unit
C
s
MILLIMETERS
DIM MIN MAX
B 11.94 12,10
6,35 8.64
C
D
0.11 0,86
1.21 1.91
E
F 24.33 24,43
4,83 5,33
G
2,61
H 2,41
J 14,48 14.99
K 9.14
p
1.21
Q
3,61
3.86
S
8.89
3.68
T
U
- 15.15
-
INCHES
MIN MAX
0,410 0.500
0,250 0,340
0,028 0,034
0.050 0,015
0,95B 0,962
0,190 0,210
0,095 0.105
0.510 0.590
0.360
0.050
0.142 0.152
0.350
0.145
0.620
-
All JEDEC Dimensions and and Notes Apply.
CASE 8Q'()2
TO·66
4-26
2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP
ELECTRICAL CHARACTERISTICS ITe
= 25 0 e
unless otherwISe noted.1
Characteristic
'OFF CHARACTERISTICS 111
COllector-Emitter Sustaining Voltage
IIC = 200 mAde. IS = 01 NPN
lie = 50 mAde, IS = 01 PNP
2N3583
2N3584
2N3585
2N4240
2N6420 VCEOlsu,1
2N6421
2N6422
2N6423
Collector Cutoff Current
IVCE = 150 Vde, 'S = 01
IVCE = 225 Vde, VSEloffl = 1.5 Vde, TC = 1500 CI
IVCE = 300 Vde, VSEloffl = 1.5 Vde, TC = 1500 CI
2N3583
2N3584
2N3585
2N4240
--
-
175
250
300
300
-
-
'CEX
2N3583
2N3584
2N3585
2N4240
2N3583
2N3584
2N3585
2N4240
2N6420
2N6421
2N6422
2N6423
2N6420
2N6421
2N6422
2N6423
10
5.0
5.0
5.0
-
2N6420
2N6421
2N6422
2N6423
All
All
-
-
-
10
5.0
5.0
5.0
mAde
-
-
-
1.0
1.0
1.0
.2.0
3.0
3.0
3.0
5.0
-
-
1.0
1.0
1.0
2.0
3.0
3.0
3.0
5.0
mAde
'ESO
2N3583
2N3584
2N3585
2N4240
Vde
mAde
-
2N6420
2N6421
2N6422
2N6423
Emitter Cutoff Current
IVSE = 6.0 Vde, IC = 01
-
ICEO
Collector Cu toft Cu rrent
IVeE = 225 Vde, VSEloffl = 1.5 Vdel
IVCE = 340 Vde, VSEloff! = 1.5 Vdel
IVeE = 450 Vde, VSEloffl = 1.5 Vdel
175
250
300
300
-
-
-
5.0
0.5
0.5
0.5
-
-
5.0
0.5
0.5
0.5
40
-
40
-
-
ON CHARACTERISTICS III
DC Current Gain
'IIC = 0.5 Ade, VCE = 10 Vdel
'IIC = 0.75 Ade, VeE = 2.0 Vdel
IIC = 0.75 Ade, VCE = 10 Vdel
'IIC = 1.0 Ade, VCE = 2.0 Vdel
IIC = 1.0 Ade; VCE
= 10 Vdel
2N3583
2N4240
2N4240
2N3584
2N3585
2N3583'
2N3584
2N3585
2N6420
2N6423
2N6423
2N6421
2N6422
2N6420
2N6421
2N6422
2N4240
2N3583
2N3584
2N3585
2N6423
2N6420
2N6421
2N6422
2N4240
2N3584
2N3585
2N6423
2N6421
2N6422
All
All
*Collector-Emitter Saturation Voltage
IIC = 0.75 Ade, IS = 75 mAdel
IIc = 1.0 Ade, la = 125 mAdel
= 0.75 Ade, IS = 75 mAdel
= 1.0 Ade, la = 100 mAdel
Base-Emitter On Voltage
lie = 1.0 Ade, VeE = 10 Vdel
40
10
30
8.0
8.0
200
100
150
80
80
40
10
30
8.0
8.0
10
25
25
200
100
150
80
80
-
10
100
100
25
25
100
100
-
1.0
5.0
0.75
0.75
-
1.0
5.0
0.75
0.75
-
-
1.8
1.4
1.4
-
1.8
1.4
1.4
-
1.4
-
1.4
Vde
VCElsatl
*8ase-Emltter Saturation Voltage
lie
IIc
-
hFE
IIC = 0.1 Ade, VCE = 10 Vdcl
-
Vde
VaElsati
*Jndicates JEDEC Registered Data.
111 Pulse Test: Pulse Width = 300 "s, Duty Cycle <: 2%.
4-27
-
VaElonl
Vde
•
2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP
ELECTRICAL CHARACTERISTICS ITe = 25 0 e unless otherwISe noted.)
Characteristic
DYNAMIC CHARACTERISTICS
·Current Gain - Bandwidth Product! 1J
lie = 200 mAde, VCE = 10 Vde, fteS! = 5.0 MHzl
MHz
IT
2N3583
2N3584
2N3585
2N4240
2N6420
2N6421
2N6422
2N6423
Output Capacitance
10
-
10
-
15
-
15
pF
eob
IVes = 10 Vde, 'E = 0, f = 1.0 MHzl
All
·Small·Signal Current Gain
lie = 100 mAde, VeE = 30 Vde, I = 1.0 kHzl
-
120
-
120
25
350
25
350
-
3.0
.-
3.0
-
0.5
-
0.5
-
4.0
-
4.0
-
6.0
-
6.0
-
3.0
-
3.0
-
3.0
-
3.0
-
hie
2N3583
2N6420
2N3584
2N3585
2N4240
2N6421
2N6422
2N6423
2N3584
2N3585
2N4240
2N6421
2N6422
2N6423
2N3584
2N3585
2N4240
2N6421
2N6422
2N6423
'SWITCHING CHARACTERISTICS
•
Rise Time
{Vee = 200 Vde, IC = 1.0 Ade, RL = 200 Ohms,
181 = 100 mAdel
{Vee = 200 Vde, Ie = 0.75 Ade, R L = 267 Ohms,
181 = 75 mAdel
'r
Storage Time
ps
ts
{Vee = 200 Vde, Ie = 1.0 Ade,
181 = 182 = 100 mAdel
IVec = 200 Vde, Ie = 0.75 Ade,
181 = 182 = 75 mAdel
Fall Time
{Vce = 200 Vdc, Ie = 1.0 Ade,
lSI = IS2 = 100 mAdel
{Vee = 200 Vdc, Ie = 0.75 Ade,
181 = IS2 = 75 mAdel
ps
tf
Second Breakdown Collector Current
{VeE = 100 Vdel
* Indicates JEDEC Registered Data
{IIIT= Ihfel- f test .
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
VCC
RB
51
01
fr,lf"'; 10 n5
DUTY CYCLE = 1.0%
-4V
RS and RC VARIED TO OBTAIN DESIREO CURRENT LEVELS
01 MUST SE FAST RECOVERY TYPE, ego
MBD530~ USED ABOVE IB • 100 rnA
MSD6100 USED BelOW 'S. 100 rnA
FOR Id and Ir, OilS DISCONNECTED AND V2 = O.
FOR PNP TEST CIRCUIT, REVERSE DIODE AND VOLTAGE POLARITIES
·4-28
\
ps
2N3583 thru 2N3585 • 2N4240 - NPN
2N6420 thru 2N6423 - PNP
NPN
2N3583 thru 2N3585,2N4240
PNP
2N6420 thru 2N6423
FIGURE 2 - TURN-QN TIME
1.0
O. J
VCC' 200 V
ICI1B' 5.0
ICI1B - 10
Tp250C
o. 5~"
0.3
0.2
I.......
L......
r..
r-
~
w
o. 1
r-......
[;"
.....
0
-' 0.05I=VBE(Offl
.....
0.03
50
70
100
200
300
---- -
500 700
1.0 k
t'......
.......
50
30
IC. COLLECTOR CURRENT (mAl
10
7.0
5.0
2.0
~
~
Is
.......
I-...
1.0
.....
1i
~
""
-
0.3
i-
0.2
O. 2
O. 1
20
'"
t;
::.
c
50
FIGURE 4 0
70
100
200
20
2.0k
500 100 1.0 k
300
30
50
--
c
g:
i=
c
/
0
~
~
~ 20
JO
-
,"" ...
::.
<.>
r:
-
...<3~ 200
\.
"'~"' 100
...; 10
1\
PNP
30
50
70
100
500 JOO 1.0 k
2.0 k
200
300
CAPACITANCE
t-
500
Cob
0.5
VR.
.4-29
25°C
NPN
:1--rNr
2
0.1
0.2
IC. COLLECTOR CURRENT (mAl
l=
-
5Of-.
f - NPN
20
300
-
1000
100
i 500
0 __
~ 30
"'\.
:;.--
II
7.0
5.0 1.0 10
200
2000
.......
z
10
..... ,
I,
~
100
FIGURE 5 -
,
I
i'""...
.....
IC. COLLECTOR CURRENT (mAl
CURRENT·GAIN - BANDWIDTH PRODUCT
VCE,10V
TJ , 25°C
0
VCC - 200 V
ICI1B-5.ii::::
ICIIB' 10 -:-:
TJ - 25°C
'0.1
30
IC. COLLECTOR CURRENT (mAl
~
r--~
r2.0k
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT (mAl
"
"" 0.5
~
t::,...."
100
Is
1.0
~ 0.1
;:: D. 1
O.5
O. 3
-.;;;;
JO
2.0
K. . .
17
........
~
FIGURE 3 - TURN-OFF TIME
10
VCC-200V
1.0
lellB = 5.0
5.0
Ic/lB = 10
Tr 25°C
3.0
-
3.0
.......
II
0.0 1
20
2.0 k
.........
t'-
I ....
D, 1
;::: 0.07
-' 0.051--- Id@
f-0.031--- VBrOT iOI
0.02
r--.
0.02
30
~
VCC' 200 V
ICI1B' 5.0
ICI1B'lo
TJ' 25°C
.........
]
;I
! 0.0 7~ld@
I,
o. 3
o. 2 '
/
Ill'"
0.0 1
20
1. O~
O. 7
O. 5
== =
1.0
2.0
REVE~SE
5.0
10
VOLTAGE (VOLTSI
20
50
!OO
2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP
FIGURE 6 - THERMAL RESPONSE
w
'-'
1.0
z
O. 7~D-0.5
~
iii
a:
~
~r::::
0.2
~ _ 0.2
C
w
:rw
0.0
7t=:
~ ~~.O5
~
0.0 3
i
0.0
>
r-
L
0.05
11
.....
0.02
~
2~ I-ii.iii'
.A"/
X
0.0 11-""
0.01
.
0 CURVES APPLY FOR POWER' PULSE TRAIN SHOWN
=
=
:
REAO TIME AT tl
TJlpk).= TC = Plpk) ROJCIII
t2
DUTY CYCLE, 0 = tl1t2
I 111111
SINGLE PULSE
0.02
ROJC(t)·r(t)
ROJC
ROJC 5.00CIW
P(pk)
/ V
0.1
~ ~ O. 1
~~
-e J
i--" ~
t-~
II
'fLIl
O. 5
0.3
0.05
0.1
1.0
0.5
0.2
2.0
5.0
I I
10
20
50
200
100
500
1000
t,TIMElmsi
ACTIVE-REGION SAFE OPERATING AREA
FIGURE 7 - 2N3583 thru 2N3585.
10
-
5.0
;;::
!
2. 0
ffi
1.0
J ...
1'.,. .... b-"
1.0ms
5.0 ms
13
- BONDING WIRE LIMIT
a:
THERMAL LIMIT ISINGLE PULSE)
2 SECOND bREAKDOWN LIMIT
APPLY BELOW
I~F= CURVES
RATED VCEO
80.05-'1=
~
}001"=
OOps
I........
r ..
:.
!J
0.02
0.0 1
3.0
II I
20
30
de
70
2N6420 LIMIT
1.0
::=t=!=I= Tc = 250C
O.S
~
"
~
,
!J
0.02
100
500ps
"\.
~ ~: §
I
50
~ 2.0
r
1.0';;;"::.....
5.0 ms
de
_ 80NOING WIRE LlMITr---fa:
2 - - - THERMAL LIMIT ISINGLE PULSE)
- - - SECOND BREAKDOWN LIMIT
': CURVES APPLY BELOW
1=
RATED VCEO
C
'-' 0.05 =
I II II
5.0 7.0 .10
.....
;;::
a~
2N3583
2N3584
2N3585&2N4240
l00~
5.0
!z
:==+=t=+ TC = 250C
~ '0.5
10
100PS_~
.......
2N3583 LIMIT
FIGURE 8 - 2N6420 thru 2N6423
2~4240
200 300
0.0 1
3.0
7.0
10
2N6420
2N6421
'"
~Nr4rw
II I
5.0
r'\.'\
20
3D
50
70
100
200
300
VCE. COLLECTOR·EMlnER VOLTAGE IVOLTS)
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 9 - POWER DERATING
100
la:
~
~
r---
60
to
Z
i
w
C
a:
~
SECJNOL
BREAKOOWN DERATING
-"""'-
" 1""'-
0
...........
"
~
TH~~~:~NG
40
......t---
.....
T Jlpk) may be calculated from the data in Figure 6. At high.
........
20
o
Q
20
40
60
80
100
120
TC. CASE TEMPERATURE 10C)
140
There are two limitations on the pOW'er handling ability of 8
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC·VCE limits of the transistor
that must be observed for rei iable operation; i.B .• the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figures 7 and 8 is based on T C = 25°C; T J(pk)
is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature according to Figure 9.
160
"'"
""
180
200
case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdovvn. Second breakdown limitations do not derate
the same as thermal limitations. AIICMlable current at the voltages
shown on Figures 7 and 8 may be found at any case temperature
by using the appropriate curve on Figure 9.
'
2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP
PNP
2N6420 thru 2N6423
NPN
2N3583 thru 2N3585,2N4240
FIGURE 10 - DC CURRENT GAIN
300
I.•1.
TJ'150:C
200
300• _ _TJ
100
-VCE~20V
-VCE' 10 V
150°C
~
--VCE'2.0V
- VCE ~ IOV
25°C
I::...
.~
~ 70
~
~
a'"
25:C
!=
z 100
50 ' - -55 C
30
,
~
10
"
7.0
5.0
3.0
20
30
1.0
O. S
55°C
30
, .'.
r"
10
.\
c
~
~
~ .~
10
7,0
5.0
3.0
10
1.0 k
50
30
100 300
500 700 1.0 k
70 100
IC, COLLECTOR CURRENT {mAl
FIGURE 11 - COLLECTOR SATURATION REGION
1.0
T~}l~JJ
1.0 k
~)15O~
~
~
~
W
O.S
to
""
o
""C;
\
0, 6
0
0.4
1\
1
15omA\
"'i-IJ.ll
8
tl
-r,loori
0
>
1.0
5,0
2.0
IlII10
--
10
0.6
1000 rnA
::i
>>-
' \ 750
rnA
500 mA
\
o
g_ o.
>
1000 rnA
::
~
I
1\
\
C;
ffi
70 100
100 300
500 700 1.0 k
IC, COLLECTOR CURRENT {rnA}
\
o
~
w
to
50
-
*a'"
~
~
c
W
~1O
g
100
I-70
~
>- 50
z
~
~
50
100
\
0.4
'"
~
8
0,1
tl
0
\
0
r--.. .... tt- f100
>
500 1000
750 mA
500 rnA
1.0
1.0
0.8
VSE(sal} @ICI1S = 5.0
~o o. 6
~
FIGURE 12 - "ON" VOLTAGES
1.0
TJ = 25°C
/. V
0.8
I-- ~ i-'-"I--"
i--- I-"
I
VSE @VCE = 2.0 V
W
to
ICI18
~ 0.4
o
0, 1
i--- ,...-
VCE{,,'}
II I
III
V
>
>'
5.0
r-....
I10
10
30
50
70 100
200
100.
100
500
....
=
10
I
VSE{sat}@ICl1s = 5.0
P
~ ::::::-i--""
~
>-
;5 O. 6
j
VSE@ VCE = 1.0 V
~
'-5y=- ~
W
to
~ 0.4
1CI18 = 10
o
>
~iO-
>'
5.0
o.1
I--"
'-VCE{sat}
0
20
50
18, SASE CURRENT {rnA}
11 1
II I
TJ ~ 25°C
"'
'fII,lOo jA ....... f,
0.5
IS, SASE CURRENT {mAl
1.0
1\
r--- 1=:1-
150 mA
300
500 100 1.0 k
o
2.0 k
10
IC. COLLECTOR CURRENT {rnA}
30
50
70
100
100
300
4-31
II
500 700 1.0 k
IC. COLLECTOR CURRENT {rnA}
NOTE: DC CURRENT LIMIT FOR 2N3583, 2N6420 101.0 Amp.
A
"I'F2.0
P'
2.0 k
2N3583 thru 2N3585 • 2N4240 - NPN
2N6420 thru 2N6423 - PNP
NPN
PNP
2N3583 thru 2N3585,2N4240
2N6420 thru 2N6423
FIGURE 13 - TEMPERATURE COEFFICIENTS
+1.5
~
3>
.§. +1.5
~
+1.0
--r
*()VC for VCE(sat)
S
....
~ -1. 0
•
~ +1 .5
~ +t. 0
~ +0 S
./
~ -1.5
Ovs for VSE
~---r30
c:::. -2.
20
50
70
-
V
~
1S0CtoISO~
'~
t::::
....
100
100
300
i
ISSo~ to l1S Ct
-0. S
25 0 C to 17S ce
~ -1. 0
T
~ -1. S OVS for VSE
~src tol150f
1.0 k
......
:r
-
-Isso~ to lsolC
~-2. 0
SOD 700 1.0 k
;::;:;;
25 0 C to 17S oe
*OVC for VeEfsat)
S
-SrCtor'"i
~ -0.S
';;-2.
V
25" '\.
lms
500 1" 250llS -
...--\
""\.
L
\/",50p.'
.\
!
250p.'
\\ \
0 \ :\\
0.7
"-
8 0.5
"\.
"\I\' \
..Q
'\.\\l
0.3
~
0.2
0.1
.!
~501'S -
o
10
20
3D
40
50
60
70
10
20
30
40
50
60
70
80
90
VeE, COLLECTOR·EMITTER VOLTAGE (VOLTsI
The Safe Operating Area Curves indicate I,. - V r>: limits
below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall
within the applicable Safe Area to avoid causing a .collectoremitter short. (Duty cycle of the excursions make no signifi-
cant change in these safe areas.) To insure operalion below
the maximum T... the power-temperature derating curve
must be observed for. both steady slate and pulse . power
conditions.
2N 3719, 2N3720(SILICON)
2N 3867, 2N3868
2N6303
SILICON PNP POWER TRANSISTORS
· .. designed for high·speed, medium-current switching and high·
frequency amplifier applications.
•
3 AMPERE
POWER TRANSISTORS
PNP SILICON
Collector·Emitter Sustaining Voltage VCEO(susl = 40 Vdc (Min) - 2N3719,2N3867
=60 Vdc (Min) - 2N3720,2N3868
= 80 Vdc (Min) - 2N6303
40,60,80 VOLTS
6 WATTS
•
DC Current Gain hFE =25-180@IC=1.0Adc -2N3719,2N3720
= 40-200 @ IC = 1.5 Adc - 2N3867
= 30-150 @ IC = 1.5 Adc - 2N3868,2N6303
•
Low Collector-Emitter Saturation Voltage VCE(sat) = 0.75 Vdc@ IC = 1.0 Adc - 2N3719,2N3720
= 0.75 Vdc@ IC = 1.5 Adc - 2N3867,2N3868,
2N6303
•
High Current-Gain - 8andwidth Product fT = 90 MHz (Typ)
•
2N3867 JAN and 2N3868 JAN also Available
•
'MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VC8
Emltter·Base Voltage
VE8
IC
Continuous
Peak
Collector Current
Base Current
IS
Total Device DiSsipation @TC - 25 C
Derate above 2SoC
Po
Total DeVIce Dissipation @ TA
Po
=>
25 C
2N3719
2N3B67
40
40
Derate above 2SoC
2N3720
2N3868
60
60
4.0
3.0
10
0.5
6.0
34.3
1.0
5.71
2N6303
80
80
Unit
Vde
Vde
Vde
Adc
Ade
Watts.
mW/oC
Watt
mW/oC
Operating and Storage Junction
Temperature Range
TJ.Tstg
- - 6 5 1 0 +200 - - -
THERMAL CHARACTERISTICS
Max
Characteristic
Thermal Resistance, Junction to Case
·c
STYLE 1:
PIN I. EMITIER
2.8.ASE
3. COLLECTOR
29
175
Thermal Resistance, Junction to Ambient
4'ndlcates JEOeC Registered Data
FIGURE 1 - POWER DERATING
8. 0
7. 0
Is.
0
~ 5.0
~~
C
'~
""" """" '"
4. 0
ffi
3. 0
~
£
2.0
"- r-....
I.0
o
o
25
50
75
100
125
'"
150
~200
175
All JEDEC dimensions and notlS Ipply.
CASE31.1J3
T0-5
TC, CASE TEMPERATURE (DC)
. 4-39
2N3719,2N3720,2N3867,2N3868,2N6303
*ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)
I
I
Cha_istic
Symbol
I
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Susteining Voltege (1)
'IIC = 20 mAde, IS = 0)
VCEO(sus)
2N3867
2N3868
2N6303
Collector-Sase Sreakdown Voltage
(lC = 100 ",Ade, IE = 0)
•
40
60
80
-
4.0
-
-
1.0
-
150
2N3867
2N3868, 2N6303
50
35
-
2N3867
2N3868,2N6303
40
30
200
150
=3.0 Vde)
2N3867
2N3868,2N6303
25
20
-
=3.0 Ade, VCE = 5.0 Vde)
2N3867
2N3868, 2N6303
20
-
-
0.5
0.75
1.3
Collector Cutoff Current
(VCE = Rated VCS, VSE(off)
ICEX
Collector Cutoff Current
(VCS = Ratad VCS, IE
= 2.0 Vde)
-
Vde
",Ade
",Ade
(1)
hFE
= 1.0 Vde)
=1.5 Ade, VCE = 2.0 Vde)
(lc =2.5 Ade, VCE
ICSO
=0, TC = 1500 C)
ON CHARACTERISTICS
DC Current Gain
(lC =500 mAde, VCE
(lC
-
-
40
60
80
SVESO
Vde
Vde
SVCSO
2N3867
2N3868
2N6303
Emittar-Sase Sreakdown Voltage
liE = loo",Ade, IC = 0)
(lC
-
Collector-Emitter Saturation Voltage
(lC =500 mAde, IS = 50 mAde)
IIC = 1.5 Ade, IS = 150 mAde)
IIC = 2.5 Ade, IS = 250 mAde)
VCE(satl
Sase-Emitter Saturation Voltage
(lC =500 mAde, IS = 50 mAde)
(lC =1.5Ade, IS = 150 mAde)
(lC =2.5 Ade, IS = 250 mAde)
VSE(satl
-
Vde
-
Vde
-
-
1.0
1.4
2.0
60
-
-
120
-
1000
-
35
ns
tr
65
ns
ts
-
325
ns
75
ns
0.9
DYNAMIC CHARACTERISTICS
Current-Gain - Sandwidth Product (2)
(lC = 100 mAde, VCE '= 5.0 Vde, f test = 20 MHz)
Output Capacitance
(VCS = 10 Vde, IE
Input Capacitanea
(VES =3.0 Vde, IC
= 0, f = 0.1
MHz
fT
Cob
MHz)
Cib
=0, f = 0.1 MHz)
pF
pF
SWITCHING CHARACTERISTICS
OelayTime
Rise Time
Storage Time
Fall Time
(Vce = 3D Vde, VSE(off) = 0,
IC = 1.5 Ade~ lSI = 150 mAde)
ld
(VCC = 30 Vde, IC = 1.5 Ade,
lSI = IS2 = 150 mAde)
tf
-Indicates JEDEC Registered Data
(11 Pulse Test: Pulse Width'" 300 ",s, Duty Cycle'" 2.0%.
121 fT - I hf.l- ftest·
4-40
2N3719,2N3720,2N3867,2N3868,2N6303
*ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min
Max
40
60
-
-
"Ade
--
10
10
1.0
1.0
mAde
-
10
10
-
1.0
20
25
15
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 20 mAde, IB = 0)
Collector Cutoff Current
(VCE = 40 Vde, VBE(off) = 2.0 Vde)
(VCE = 60 Vde, VBE(off) = 2.0 Vde)
-
ICEX
2N3719
2N3720
(VCE =40Vde, VBE(off) = 2.0Vde, TC= 150o C)
. (VCE = 60Vde, VBE(off) = 2.0Vde, TC = 150o C)
-
2N3719
2N3720
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
"Ade
ICBO
2N3719
2N3720
Emitter Cutoff Current
(V BE = 4.0 Vde, IC = 0)
ON CHARACTERISTICS
Vde
VCEO(sus)
2N3719
2N3720
mAde
lEBO
•
(1)
DC Current Gain
(lC = 500 mAde,VCE = 1.5 Vde)
(lc = 1.0 Ade, VCE = 1.5 Vde)
(lc = 1.0 Ade, VCE = 1.5 Vde, TC = -40o C)
-
hFE
Collector-Emitter Saturation Voltage
180
Vde
VCE(sa!)
(lc = 1.0 Ade, IB = 100 mAde, TC = -40o C to +1000 C)
(lC = 3.0 Ade, IB = 300 mAde, TC = -40o C to +100oC)
Ba .... Emitter SaWration Voltage
(lC = 1.0 Ade, IB = 100 mAde, TC = -40o C to +1000 C)
(lC = 3.0 Ade, IB = 300 mAde, TC = -40C;>C to +1000 C)
-
-
0.75
1.5
-
1.5
2.3
Vde
VBE(sa!)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 500 mAde, VCE = 10 Vde, f test = 30 MHz)
fT
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 0.1 MHz)
Cob
Input Capacitance
(VEB = 0.5 Vde, IC = 0, f = 0.1 MHz)
Cib
MHz
-
60
pF
-
120
-
1000
-
100
-
400
pF
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC= 12Vde, VBE(off) = 0, le= 1.0 Ade, IBl =0.1 Ade)
ton
Tum-Off Time
(VCC= 12Vde, IC= 1.0 Ade, IBl = IB2= 100 mAde)
toff
ns
ns
-Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width ~ 300 ,",5, Duty CVcle = 2.0%.
(2) fT = Ihfe I- f test -
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
1000
Vee
700
t,@Vee=30V
500
le/la=I~=
TJ - 25 0 e
300
~ 200
...
!
1,. If" IOns
DUTY CYCLE' 1.0%
-=
-=
Vaa
NOTE:
For information on Figures 3 and 6, RB and, He were
varied to obtain desired tast conditions.
for 1:d and tr specifications, remove diode and
Vee
Re
. Ra
VI
V2
Vaa
2N3719
2N3720
-12V
J2n
loon
'B.OV
-11 V
~3.0V
2N3867
2N3B6B
ZN63D3
-lOV
19n
loon
13.GV
-IS,4V
100
70
50
.......
t-..::
f--+-
0
0
I0
0.03
==-3.0 V
""
td@VaElolff=4.0
r-..... ......
1111
lIT!
0.05 0.07 0.1
0.2
0.3
0.5 0.7
Ie, COLLECTOR CURRENT (AMPf
.tVI=D.
4-41
1.0
2.0
3.0
2N3719,2N3720,2N3867,?N3868,2N6303
FIGURE 4 - THERMAL RESISTANCE
1.o·
O. 71- 0 =0.5
O. 5
... 8
- --
: ~ 0.3 ,--h.2
ffi ~ o.2
~~
~ ~ O. 1
~ ~
1-- ::;:::::
.....
0.07
-=-
~
-
-
==
....L
0.01
SINGLE PULSE
0.03
0.02
0.3
0.5
0.7
--
-12
_
-
DUTY CYCLE. 0 = 11112
I III
0.0 1 '
0.2
•
-
P{pkl
g ~ 0.05
?rn
--
.-&-1,,1-=
;;,.
0.1
0.05
>-0
=
OJC{I) = r{t) OJC
OJC = 290 CIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
TJ{pkl- TC = P{pkl OJCltl
1.0
2.0
3.0
5.0
7.0
20
10
I.
30
50
70
100
200
300
500 700 1000
2000
TIME {m,1
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
0
5;Ofd
5.0
£
~
!Z
w
~
"'"'d.~
f~ ...
2.0
50",
~oo",
5.0m.
"\.
1.0
O. 5
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC -' VCE limits of the
transistor that must be observed for reliable operation; i.e .• the
transistor must not be subjected to greater dissipation than the
curves indicate.
"
... ...
=>
TJ -200oC
O.2 - - - - - BONDING WIRE liMITED
------THERMALLY LIMITED IiHC· 25°C
o. 1 E
(SINGLE PULSE)
SECONO BREAKOOWN liMITED
8 0.05
CURVES APPLY BELOW
oS
2N3719.2N3B62
RATED VCED
- 0.02
2N3720.2N3B68
-12N6lO3
0.0 1
1.0
2.0 3.0
5.0 7.0 10
20
30
'"
~
The data of Figure 5 is based on T J(pk) - 2000 C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for dutY cycles to 10% provided T J(pk)": 200u C.
T J(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
~
50
70
100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 6 - TURN·OFF TIME
FIGURE 7 - CAPACITANCE
1000
1000
700
500
300
700
500
ICIIB" 10
IBI - IB2
TJ' 250 C
.....
...
300
...'"
..'"
200
TJ - 25°C
--I"-
~
200
..... ~~
]
~100
..
P
w
z
f
lsi=:: t::=
70
50
~
oS
30
20
10
0.03
U
t,.VCC'lOV
0.05 0.07 0.1
0.2
D.3
"
0.5 0.7
II1.0
.
100
70
50
Cob
30
r2.0
Cib
20
10
0.1
3.0
IC. COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
4-42
50
100
2N3719,2N3720,2N3867,2N3868,2N6303
FIGURE 8 - DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
~ 2.0
100
70
z
;;:
....
'"z
~
II:
=>
'-' 3D
'-'
c
~
...
TJ = +15OOC
50
20
-
...... f.--- r-
I
~
-Ii::
:...-I -
t- _155
.-
.~--
Jc
-
... ... ,......
~~
---"'"
~
~ 0.8
o
0.05 0.07 0.1
0.2
0.3
r5
0.5 0.7
\IC=0.5A
0.4
ul
~ 0
2.0
3.0
......
f'...
r-
10
I
20
TJ = ~5~CI
~ 1.0
o
~
w
'"
~
o
+2. 5
G
3;
1/
II
II
-
~
>
.....-:
ffi
0.05 0.07 0.1
0.2
0.3
/
./
I.!olc for lCElsatl
0
u
./
~ -0. 5
~
,./
-I. 0
~
OVB for VBE
~ -1. 5
",
....
::> -2. 0
'"
0.5 0.7
1.0
2.0
3.0
-2. 5
0.03
"
0.05 0.07 0.1
, IC. COLLECTOR CURRENT lAMP)
0.2
0.3
0.5 0.7
2.0
3.0
FfGURE 13 - BASE CUT-OFF REGION
==
/
",
=TJ 150°C
;;:
V
100°C
.3-
\
5 100
./
VCE =30V-
........
10 1
TJ - 150°C
1.0
IC. COLLECTOR CURRENT lAMP)
FIGURE 12 - COLLECTOR CUT·OFF REGION
f-VCE" 3D V
500 700 1000
w
./
-
+1. 0
o
./
0.03
300
.J.
I-II 'I'
$ +0. 5
/
VCE(sat)@IC/IB=10
200
'lc/IB--hFEI2
....
G
VBE@VCE = 2.0 V
"> 0.4
o
100
I II
+2. 0
E
I
O. 2
70
;- +1. 5r- T = -550C to +1500C
V V
O.8 - VBIE(sat)@ Ic/lB = 10
0.6
50
FIGURE 11 - TEMPERATURE COEFFICIENTS
II
-
r--
lB. BASE CURRENT (mA)
FIGURE 10 - "ON" VOLTAGES
1.2
2.5 A
~A
II
30
IC. COLLECTOR CURRENT (AMP)
1.4
I\,
LOA
N
'-'
1.0
\
\
t;
-
i\
\
\
iii
~
---'--L
1.2
::
\
TJ·25bC
1\
o
~
F'"
10
0.03
~
ffi
'-
~
- - - VCE = 2.0 V
VCe=5.oV
\
~
~ 1.6
-
:::"f-
II
\
o
......
......
\
II:
a:
r-l000C
::::I
'-'
L
~lo 1
;a
~
/
I-cREVERSE
10- 2
+0.1
f::REVERSE
V
,--25°C
-0.1
-0.2
25°C
10- 2
FORWARD
-0.3
-0.4
VBE. BASE·EMITTER VOLTAGE (VOLTS)
10- 3
+0.1
FORWARD
-0.1
-0.2
VBE. BASE·EMITTERVOLTAGE (VOLTS)
4-43
-0.3
-0.4
•
2N3738, 2N3739 NPN (SILICON)
2N6424, 2N6425 PNP
HIGH VOLTAGE COMPLEMENTARY SILICON
POWER TRANSISTORS
1.0 AMPERE
POWER TRANSISTORS
, COMPLEMENTARY SILICON
· .. designed for high·speed switching, linear amplifier applications,
high·voltage operational amplifiers,switching regulators, converters,
inverters, deflection stages and high fidelity amplifiers.
225, 300 VOLTS
20 WATTS
• Coliector·Emitter Sustaining Voltage VCEO(sus) = 225 Vdc @ IC = 5.0 mAdc (2N3738, 2N6424)
=300 Vdc @ IC = 5.0 mAdc (2N3739, 2N6425)
• DC Current Gain hFE = 40·200@ IC = 100 mAdc
•
• Current·Gain - Bandwidth Product fT = 10 MHz (Min) @ IC = 100 mAde
•
~jCi)
D,
ISlb Rated to 2.0 Amperes
~
*MAXIMUM RATINGS
Rating
Svmbol
Collector-Emitter Voltage
2N3738 2N3739
2N6424 2N6425
Unit
Vde
VCEO
225
300
Collector-Base Voltage
Vce
250
325
Emitter·Base Voltage
VEe
6,0
Vdc
Collector Current - Continuous
-Peak
Ie
1.0
2.0
Adc
Base Current - Continuous
Ie
0.50
1.0
Adc
Po
20
0.133
Watts
W/oC
TJ.Tstg
-65 to+200
- Peak
Tatm Device Dissipation @ TC
= 2SoC
Derate above 25°C
Operating and Storage Junction
Vdc
- - u --,
1- -~
p
it+- ---------
If
E
SEATING PLANE
DC
---F--
Tempera,ture Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
"I ndieates JED EC Registered Data
FIGURE 1 - POWER DERATING
100
""-
~ 80
B
"
0
60
to
Z
~
~
!;i
"'" "f',.
w 40
'"
0
'";0:w
~ 20
o
o
"
25
MILLIMETERS
MIN MAX
11,94 12.70
C
6,35 8,64
D 0.71 0,86
E
1.27 1.91
F 24,33 24.43
G 4.83 5.33
H 2,41 2.67
J 14.48 14.99
K
9.14
P
1.27
Q
3,61
3,86
8,B9
S
3,68
T
U
- 15.75
DIM
r--..
...'"
'"~
I
.
STYLE 1:
PIN 1. BASE
2.EMITIER
CASE: COLLECTOR
60
75
100
125
TC, CASE TEMPERATURE (DC)
150
175
"
200
4-44
S
INCHES
MIN MAX
0,470 0.500
0.250 0.340
0.028 0,034
0,050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0,590
0.360
0.050
0.142 .15
0.350
- 0,145
0,620
-
AIlJEDEC Dimension. and and Notes Apply.
CASEBO-02
TO·66
2N3738, 2N3739 NPN/2N6424,2N6425 PNP
I
(TC ~ 1!5o C,ullle .. otherwise noted.)
ELECTRICAL CHARACTERISTICS
I
Characteristic
Symbol
Min
Max
225
300
-
-
0.25
0.25
-
0.1
0.1
-
0.5
0.5
1.0
1.0
-
0.1
30
40
25
200
-
2.5
-
1.0
10
-
-
20
35
-
Unit
"OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage (1)
IIc = 5.0 mAde, IB =0)
VCEO(sus)
2N3738, 2N6424
2N3739, 2N6425
Collector· Emitter Cutoff Current
(VCE = 125 Vde, IB =0)
(VCE = 200 Vdc, IB =0)
mAde
ICEO
2N3738, 2N6424
2N3739, 2N6425
Coliector·Base Cutoff Current
(VCB =250 Vde, IE = 0)
(VCB =325 Vde, IE =0)
ICBO
2N3738, 2N6424
2N3739, 2N6425
Collector Cutoff Current
(VCE = 250 Vde, VEB(off) = 1.5 Vde)
(VCE =300 Vde, VEB(offl = 1.5.Vdc)
(VCE = 125 Vde, VEB(off) =1.5 Vde, TC =100o C)
(VCE = 200Vde, VEB(off) = 1.5 Vde, TC =lOOOC)
-
2N6424
2N6425
2N6424
2N6425
-
-
Emitter·Base Cutoff Current
(VEB =6.0 Vde)
mAde
mAde
ICEV
2N3738,
2N3739,
2N3738,
2N3739,
Vdc
mAde
lEBO
'ON CHARACTERISTICS
DC Current Gain (1)
(lC = 50 mAde, VCE = 10 Vde)
(lC = 100 mAde, VCE = 10 Vdc)
(lC =250 mAde, VCE = 10 Vde)
-
hFE
Coliector·Emitter Saturation Voltage (1)
(lC =250 mAde, IB =25 mAde)
VCE(satl
Base· Emitter ''ON'' Voltage (1)
(lC = 100 mAde, VCE = 10 Ydc)
VBE(on)
Vdc
Vdc
SMALL SIGNAL CHARACTERISTICS
Current·Gain - Bandwidth Product (21
(lC = 100 mAde, VCE = 10 Vde, I = 10 MHzI
'Output Capacitance
(VCS = 100 Vde, IE = 0, I
pF
Cob
= 100 kHz)
·Small·Signal Current Gain
(lC = 100 mAde, VCE = 20 Vdc, f
MHz
'T
-
hIe
= 1.0 kHz)
"Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width ":300 "S, DutY Cycle ":2%.
(2) 'T = I hIe I- Irequeney
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
VCC
+150 V
01 Must Be Fast Recovery Type, e.g.
MBD5300 Used AbovelB = 100 rnA
MSD610Q Used Below I B = 100 rnA
j25"'r-
V,
V2
RC
"1-+-J
9.0V
tr,tt
Scope
RB .
01
51
:S;10n.
Duty Cycle'" 1.0%
-4.0 V
RS and RC Varied to Obtain Desired Current
For
L~els
tel and trl 01 is disconnected and V2 "'" 0
For PNP test circuit, reverse diode and voltage polarities.
4-45
•
2N3738, 2N3739 NPN/2N642,4. 2N6425,PNP
PNP
2N6424.2N6425
NPN
2N3738. 2N3739
FIGURE 3 - TURN-ON TIME
1.0
1. 0
O. 7~
0.5
f:;2'@ VCC = 150 V
O. 1
j::
_- 0.0
7
0.05
w
~
I-
.....
-
r-...
O. 1
Id @VBE(olf) - 0 V
["-.,
0.03
r---....
30
:-:-...
O. 2
0.05
0.02
20
ICIIB = 10
TJ 25 0 C
150 V
.: 0.07
til@VSE(olf)=OV
0.03
•
~
.,.,.
r-.
== """
0.0 1
10
t,@VCC
O. 3
'I'-..
~ 0.2
w
O.7
O. 5
.....
O. 3 ..........
:IE
ICIIS = 10
TJ= 25 0 C
.........
0.02
200 300
50 70 100
IC. COLLECTOR CURRENT (mA)
0.0 1
500 700 1000
10
20
30
50
100
70
200
500 700 1000
300
IC. COLLECTOR CURRENT (mAl
FIGURE 4 - TURN-OFF TIME
0
10
7.O~ls
5. 0
ICIIB 10
IBI -IB2
TJ=25 0 C
r-
3. 0
w
:IE
j:: '1.
.:
5. 0
3. 0
I"'--
~ 2. 0
......
2. o
~
"
0f"....'I@VCC=150V
O.7
O. 5
w
1. 0
'~.
o. 7
"
.....
o. 3
O. 2
O. 2
O. 1
10
O. 1
10
50· 70
100
200
300
500 700 1000
20
FIGURE 5 - CURRENT·GAIN - BANDWIDTH PRODUCT
50
:r
I-
'"3:
.
'"z
c[
I
z
~
0
--
i,...o-
0
2. 20
I
300
200
I-
-t-
~ 10Ot'::---
...zw
;::
;:;
:-......
2N3738. 2N3739~ ,
10
7. 0
70
100
200
300
500 700 1000
FIGURE 6 - CAPACITANCE
2N6424.2N6425
0_
~ 5. O~
r--a:
§ 3.0
...J:'
I
100
g:
50
500
~
70
30
IC, COLLECTOR CURRENT (mAl
~ 200
~
~
.......
IC. COLLECTOR CURRENT (mA)
g
["-.,
5
......
30
r--.
l'.. II@ VCC ~ 150 V
o. 3
20
ICIIB -10
IBI -IB2
TJ ~ 25 0 C
7. o~ I;;;.IS
I
I
30
40
..~
,
VCE = 10V
Tr25 0 C
60
80 100
200
300
0
50
IC. COLLECTOR CURRENT (mAl
Cob
....
0
7.0
5.0
0.1
400
r-
0
10
"'
-- -
Cib
......
- - - - 2N3738. 2N3739
- - 2N6424. 2N6425
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.07.0 10
::::
20 30
VR. REVERSE VOLTAGE (VOLTS)
4046
50 70 100
2N3738, 2N3739 NPN/2N6424, 2N6425 PNP
FIGURE 7 - THERMAL RESPONSE
1. 0
O.
~
7f--D' O.S
o. S
2
NO.3
... :::;
z":
~~ O.
zo
E5
a:
0.7
0.5
~
_
8
~
"
50t~·
200~~ ........
OOp,
....
1.0
de
TC = 25"C
'\. ~
I
- - - - BONDING WIRE LIMITED
----THERMALLy LIMITED
0.1
(SINGLE PULSE)
0.07f=: ---SECOND BREAKDOWN LIMITED
0.05
CURVES APPLY BELOW RATED VCEO
!==
0.02
3.0
II II
5.0
7.0
10
I
20
.... ....
"
50
70
100
200
200
0.2
g o.
E
1
\
1'
TC' 25"C
lO.
-\\ \ \
1.0 m•
=
IIII
O.S
0.7
10
20
30
50
II
70
~\. ~
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e .• the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figures 8 and 9 is based on TC = 2So C; TJ(pk) is
variable depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) .;;; 17So C. T J(pk)
may be calculated from the data in Figure 7. At high case temp-
eratures. thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown
on Figures Band 9 may be found at any case temperature by
using the appropriate curve on Figure 1.
4-47 .
\\
de
~
~
100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
\50p._
\ ~100p.
....
----BONOINGWIRELIMITED tJj5.0m,
==----THERMALLy LIMITED
(SINGLE PULSE)
0.07
0.0 5 =----SECONO BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.03
0.02
0.3
300
...
...
5001'S
o
8
II I
30
O. S
O. 3
~
.'\
R\ \.\
1=
0.03
>a:
=>
~
."-
-
'.
~ o. 7
1.0ms-
0.3
~ 0.2
a:
o
t~
r.>
2. 0
200
300
•
2N3738, 2N3739 NPN/2N6424,2N6425 PNP
I
NPN
2N3738. 2N3739
FIGUR~
300
70 =
'"
~
•
30
a
20 I--
<.>
c
~
10
TJ = 150'C
""-"
-
-5~'C
z 10 0
~ 70 - -55'C
~ ,5 0
I'
'"
13
'-r~
7.0
5.0
20
30
50
70
100
<.>
c
W
0- 'r~
300
'I.
I"- ~
\.
.......
0
""
Jtl 0
7. 0 _
5.0 - '
200
......
......
0
VCE = 2.0 V
IVCP 10V
-
3.0
10
.....
.......
25'C
=25'C
50
w
300
200
---'-VCE=10V
r-
-+--..
100
1&- DC CURRENT GAIN
~JcEI=J.ol
200 -T) 15J.C
z
;;:
....
z
PNP
2N6424. 2N6425
30
10
500 700 1000
20
30
IC. COLLECTOR CURRENT (rnA)
50
70
200
100
300
500 700 1000
IC. COLLECTOR CURRENT (rnA)
FIGURE 11 - COLLECTOR SATURATION REGION
-
1.0
~
II II
c
~
~
I II
I II
~+- IG= 1OmA
o. S
20 rnA
~
100 rnA
50mA
;;;
irl
g O. 2
"'
<.>
~
>
-.
0
0.1
0.2
.......
- 50
T
0.5
1.0
2.0
5.0
10
20
i50~A
~-4++~HH~-~~\+++H~-4~~-HH+H
;::
0.61+-4++~HH*--1--H\r!++H~-\l-~-HH+H
~
~
\
0.4
,
\
~
irl·
\
\ +++-ld1It1---I-''i,+f+t-H1
\
~ 0.21----'l"-dr--+Nd+++-4.......
!
~
~
~
~
I
\
rnA
to
~
\
'"
\ II
~ S IC=1~26mIA ~6ImA-'-~106~~
~O,'
250mA
.,
o. 4
~
III
I I
o. 6
~
I I
~
c
~
1.0rr-......,.r-T-,-,rTr"TTT"--nrrrrTTl.,-r-.....,....,-,.,...,...,n-m
TJ = 25'C
TJ = 25'C
1±
I100
>~
--
07-~~~~~~~~~~~~~~~~
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
IS. BASE CURRENT (rnA)
lB. BASE CURRENT (rnA)
FIGURE 12 - "ON" VOLTAGE
1.0
10
TJ = 25'C
TJ = 25'C
O.S
I-::::: t:...
VBE(sat)@IC/IS = 10
~
'"~w
0.6
'"
«
!:i
~BE@VcpllOJ
'0.4
'"
>
>'
leliB ='10
0.2
JJH-::
r-- VCE(sat)
,
o10
20
I
30
50
70
II
100
V
~
-
',-
VSEI'at) @ICIIB = 10
~
!:i
'"~
w
'"
«
!:i
'">
I I
/ I
I
300
0.6 -VBE @VCE = 10 V
..- ~
J.-- ..I
0.4
I
>'
1/
..."r
200
-
O.S
0.2
o
ICIIB~
VCE(sat)
500 700 1000
IC. COLLECTOR CURRENT (rnA)
o
10
J
1/
..... ......5.0
I
20
30
50
70
100
200
300
IC. COLLECTOR CURRENT (rnA)
~48'
I
500 700 1000
2N3738, 2N3739 NPN/2N6424,2N6425 PNP
NPN
PNP
2N3738, 2N3739
2N6424, 2N6425
FIGURE 13 - TEMPERATURE COEFFICIENTS
+1.6
+1.6
~
'APPLIES FOR Ic/la" hFE/3
u
'APPLIES FOR Ic/la" hFEl3
+1. 2
~ +1.2
.§. +0.a
:;; +0.8
>~ +0.4
~
+D.4
H:w
8
U
L-
'eVC FO R VCElsa!)
U
8
-0.4
-1.2
6 f- eVB FOR VBE
-2:4
10
20
50
30
70
200
100
300
~
-1. 61-- Ova FOR VaE
i
-2.0
>-
-2.4
10
500 700 1000
20
3D
0
'">-
~
8
TJ = 150 0 C
1
>-
103
-
~
r-- 1000C
::>
'"
u
'"0
102
10 1
~
200
100
300
500 700 1000
r--- -25 0 C
-0.3
~
VCE=200V=
f!==F REVERSE
100
-0.4
/
/
-
::>
u
70
FIGURE 14 - COLlECTOR CUTOFF REGION
105
104
~
~
50
_....
IC. COLLECTOR CURRENT ImA)
IC. COLLECTOR CURRENT ImA)
!>-
-
~
ffi
-1.2
~
'-: -2 0
.?
~ -O.B
- -
S
~ -t
-0.4
w
w
a:: -D.a
w
-~
'OVC FOR VCElsat)
~
-0.2
+0.1
+0.2
+0.3
f--- TJ ISOOC
10 3
I--- -100OC
10 2
10 1
8
VCE
~ 100
I--- _2SoC
-REVERSE
1 I--
FORWARD
-0.1
104
+0.4
+0.5
10+0.4
+0.6
+0.3
FORWARD
+0.1
+0.2
-0.1
-0.2
-0.3
FIGURE 15 - BASE CUTOFF REGION
104
VCE = 200 V::::::
====
TJ = 150 0 C
-0.4
-O.S
-0.6
VBE. BASE·EMITTER VOLTAGE IVOLTS)
VBE. BASE·EMITTER VOLTAGE IVOLTS)
-
200V-
10 3
3
I - - TJ
VCE 200 V l - ISOoC
I--- 1--1OJOC
1::::= C::: 1000 C
2
"'
1
10
It--
100
i--25 0 C
IE
FORWARD
1"'== REVERSE
-0.4
-D.3
-0.2
-0.1
+0.1
+D.2
+0.3
+0.4
+D.5
"f--- I--- 2S oC
10- 1
+0.4
+D.6
·VBE. BASE·EMITTER VOLTAGE IVOl.,TS)
FOR~ARD
REVErSE
100
+0.3
+0.2
+0.1
-0.1
-0.2
'"
-0.3
-0.4
VBE. BASE·EMITTER VOLTAGE IVOLTS)
4-49
-0.5
-0.6
•
21 3740,A
21 3741,A
POWER TRANSISTORS
MEDIUM-POWER PNP TRANSISTORS
PNPSILICON
60-80VDLTS
25 WATTS
• .• ideal for use as drivers, switches and medium·power amplifier
applications. These devices feature:
•
•
Low Saturation Voltage - 0.6 VCE(sat) @ IC = 1.0 Amp
•
High Gain Characteristics - hFE@ IC = 250 mA: 30-100
•
Excelle~t Safe Area Limits (See Figure 2)
•
Low Collector Cutoff Current 100 nA (Max) 2N3740A, 2N3741A
•
Complementary to NPN 2N3766 (2N3740) and 2N3767 (2N3741)
-,-u--'
*MAXIMUM RATINGS
Symbol-
Rating
2N3740
2N3740A
P
2N3741
2N3741A
Unit
VCEO
60
80
Vdc
Emitter-Base Voltage
VEB
7.0
7.0
Vdc
Collector· Base Voltage
VCB
60
80
Vdc
Collector-Emitter Voltage
IC
4.0
10
ease Current
IB
2.0
Adc
Total Device Dissipation @TC = 25°C
Derate above 2SoC
Po
25
0.143
Watts
W/oC
TJ.Tstg
-65 to +200
°c
Collector Current - Continuous
- Peak (Note 1J
Operating and Storage Junction
Adc
-8--
C
4t t ,~~===!!::::::::J___+
E
SEATING PLANE
--F--
Temperature Range
Note 1: See Figure 2
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
25
~ r-..
S
!
20
"-...
~ 15
~
iii
'"~
'Cii 10
~
~
e 5.0
~
..........
"
0
25
s
..........,
z
0
STYLE 1:
PIN L BASE
2. EMITTER
CASE: COLLECTOR
I
50
75
,100
125
150
TC' TEMPERATURE (DCI
~200
175
All JEOEC Oi_n. and Ind N_ Apply.
Safa Are. Curves are Indicated by Flgur. 2.
Both limits are applicable and must be observed.
CASE 80-02
(T0-66)
-Indicates JEDEC Aa,lstered Oata.
4-50
2N3740,A,2N3741,A
*ELECTRICAL CHARACTERISTICS (Te = 25 0 e unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC = 100 mAde,lB = a)
-
-E 0.03
0.02 ,.... .....
om
0.01
DUJYtYCLE,
0.05
0.1
0.2
0.3
0.5
1.0
TJlplJ
Te
Pl plI9JeIV
D~t,/t2
I II I
0.02 0.03
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME All,
IIIIII
2.0 3.0
5.0
I,TlME Imsl
4--52
10
IIIIII
20
30
50
100
200
300
500
1000
2N3740,A,2N374',A
FIGURE 8 - CURRENT GAIN
200
~J'" ~17ioc
-t:-t10 0
~+I000C
0
WC
0
......
--~
-I--
r--
0
ts ~
r--
0
10
10
30
20
•
50
1.0 V
VeE
- - -- -
+25°C
100
Ie. COLLECTOR CURRENT (mAl
300
200
--
:;:-
I"" ~
--r--.j;::
500
1000
SATURATION REGION CHARACTERISTICS
FIGURE 9 - COLLECTOR SATURATION REGION
2. 0
~
~
I
1.8
4
1.
1.2
~
1.0
!is
0.8
1!l
TJ ~ +25°C
1.6
;
O.6
~
o. 4
\
,
\
·0.2
\
\.
\
"-
0
1.0
3.0
2.0
1000mA
500mA
250mA
Ie ~ 100mA
5.0
7.0
10
20
30
50
70
100
200
I., BASE CURRENT (mAl
FIGURE 10 - "ON" VOLTAGES
1.0
TJ
~
V"I .. tl @ lell. ~ 10
o. 8
FIGURE 11 - TEMPERATURE COEFFICIENTS
+1 .0
Ulil
+25°C
.... ~ I-+-
r- j:::!--
.51-
+ IOO°C to +l75°C
I
.1
flrforvlE~
+25°C to + 100"
I-- r--
.5
.4
0
t::::=
55"C to +25"C
0
V.,@VeE' 2.0V
6
I
To compute saturation voltages:
V_I~.tl'@ operating TJ -'-- V_l llt l@+25°C+ (111_ (operatmg TJ -25°Cl
Use appropriate 8y for voltage of interest.
r-Use appropriate curve for temperature range of mterest.
I
I
IWCt!+175
fltforVBE
.2
I I
0.02 0.03
1111.1.
0.05 007 0.1
0.2
0.3
0.5.0.7
T_ r-
5
_I-'"
VeElsat}@le/IB-'" 10
0
0.01
.I
1.0
Ie. COLLECTOR CURRENT (AMPI·
-2.
0/1'1
100
200
300
400
500
600
700
Ie. COLLECTOR CURRENT (mAl
4-53
800
900
1000
•
2N3740, A, 2N3741,A
FIGURE 13 - CAPACITANCE
FIGU,RE 12 - TURN-ON TIME
3.0
~e~60V
2.0
~
1.0
-
I I I I I I
___
~
..
L
O. 5
t'--I'-r-.
C.,
..........
I
~c
, '"
:. o.3
200
....
O.1
~
w
I
TJ ~ +25'C
TJ ~ +150'C
~~
24V
Vee
300
r-.."
"~ ~
60V. Vol.
2.0V
.....::0
O. 2~t"
'\
i' . . . 1',
"
0
O. I
0.01
24V. V.,
-Vee
0
.....
........ ......
0.05
10
20
30
200 300
50 10 100
Ie. COLLECTOR CURRENT ImAl
30
500 100 1000
0.1
0.2
0.5
~
"
I'
"-
1.0
2.0
5.0
VR• REVERSE VOLTAGE IVOLTSI
10
5. 0
1.0
.I
........
5.0
4.0 ~
~,
I I I TJ ~ 125~cl
- - - TJ ~ +150'C
'\
r-- l -
2.0
-~
t-..
-t'--
~
TJ ~ +25·C
- - - TJ -+150'C
\,
~, 1\\
2.0
\r-,
.
............
1\'
~ :; i"::t< 71,e/l.~20
~::tI
Icll.~I~£ :>.::
~l<
0
, t\:,\
le/l.~~ \"
'"
1
O. 5
O.5
0.3
20
30
50 10 100
200 300
Ie. COLLECTOR CURRENT (mAl
500 100 1000
4-54
...
~
"
'"
O.3
O.2
10
\
'. ...
.......
.......
...... t-r-
"
0.2
O. I
10
II
--
1\lcll.~20
3.0
ro;;;;f=::;
50
20
FIGURE 15 - FALL TIME
FIGURE 14 - STORAGE TIME
10
3.0
I"
C;,
20
30
.....
50 10 100
200
Ie. COllECTOR CURRENT (mAl
-;....~.
...
300
500 100 1000
2N3766 (SILICON)
2N3767
MEDIUM-POWER NPN SILICON TRANSISTORS
... for use in driver circuits, switching,
and medium-power-amplifiers applications. These high performance devices
feature:
•
•
•
•
=
4 AMPERE
POWER TRANSISTORS
NPN SILICON
60-80 VOLTS
20 WATTS
Low Saturation Voltage - 1.0 VeEI"'1 @ Ie
500 mA
High Gain Characteristics - hOE
40-160 @ Ie
500 mA
Packaged in the Compact, High-Efficiency TO-66 Case
Complementary to PNP 2N3740 (2N3766) and 2N3741
(2N3767)
=
=
•
MAXIMUM RATINGS
Rating
2N3766 2N3767
Svmbol
Collector-Emitter Voltage
V eEO
60
BO
Collector-Base Voltage
V eB
BO
100
Emitter-Base Voltage
V EB
Unit
Vde
Vde
6.0
Vde
Ade
Collector CUrrent
Ie
4.0
Base Current
IB
2.0
PD
20
0.133
watts
wiDe
TJ,Tstg
-65 to +200
°e
Total Device Dissipation@ TC
Derate above 25°C
= 2SDe
Operatlng and Storage Junction
Temperature Range
Ade
THERMAL CHARACTERISTICS
Characteristic
Max
Thermal Resistance, Junction to Case
7.5
STYLE I:
PIN I. BASE
2.EMITIER
Q
I
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
20
0;
~
z:
16
~
12
is
8.0
sa
~
IS
~
.e
-...........
H
-
--....
S
.............
........
...............
-...........
............
.............
4.0
r........
.............
25
SO
75
100
ISO
125
Te. CASE TEMPERATURE lOCI
Safe Area Curves are indicated by Fiaure 2. Both limits are applicable and must be observed.
175
MILLIMETERS
DIM MIN MAX
B 11.94
6.35
C
D
0.71
E
1.27
F 24.33
G 4.83
H 2.41
J
14.48 14.99
K
9.14
P
1.27
Q
3.61
3.86
S
B.B9
T
3.68
U
15.75
-
INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.152
0.350
0.145
0.620
All JEDEC Dimensions and and Notes Apply.
CASEBO.()2
TO·66
4-55
2N3766, 2N3767
ELECTRICAL CHARACTERISTICS
(Te
= 2S·C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Voltage W
tIc·
Emitter-Base Cutoff Current
4, 6
(VeE c 80 Vdc, VBE '" 1.5 Vdc)
(VCE '" 100 Vdc, VaE'" 1.5 Vdc)
2N3766
2N3767
(VeE:::: 50 Vdc, VaE '" 1.5 Vdc, TC = I50oC)
(VeE"" 70 Vdc, VaE '" 1.5 Vdc, TC "" I50oC)
2N3766
2N3767
•
mAde
(VeE'" 60 Vdc, IB = 0)
2N3766
(VeE'" 80 Vdc, IB '" 0)
2N3767
0.1
0.1
1.0
mAde
ICED
0.7
0.7
mAde
leBO
2N3766
100 Vdc. IE:: 0)
mAde
'1.0
Collector-Base Cutoff Current
(VCB - 80 Vde, IE - 0)
0.75
IeEX
Collector-Emitter Cutoff Current
=
60
80
lEBO
(V EB - 6.0Vde)
Collector Cutofi Current
(VCB
Vde
BVCEO
2N3766
2N3767
100 mAde, IB - 0)
0.1
0.1
2N3767
ON CHARACTERISTICS
DC Current Gain
(Ie'" 50 mAde, VeE ~ 5.0 '(de)
(Ie
hFE
30
= 500 mAde, VeE = 5.0 Vdc)
40
(Ie = 1.0 Ade, VCE = 10 Vdc)
Collector-Emitter Sd.turation Voltage
tIc = 1.0 Ade,
(Ie
=
IB
B,9
=O. lAde)
Vde
VCE(sp.t)
2.5
500 mAde, IS =- 50 mAde)
Base-Em~tter
160
20
1.0
Voltage
3,5,9
Vde
VBE
(Ie = 1.0- Ade, VCE = 10 Vdc)
1.5
TRANSIENT CHARACTERISTICS
Current-Gain - Bandwidth Product
(Ie a 500 mAdc, VeE'" 10 Vdc, f '" 10 MHz)
MHz
IT'
Common-Base Output Capacitance
(VCB - 10 Vde, Ie = 0 Ade, I = 100 kIIz)
13
10
pF
Cob
50
"'.
Small-Signal Current Gain
(Ie;; 100 mAdc, VeE'" 10 Vdc, f '" 1. 0 kHz)
40
IU Pulse Test: Pulse Width .5300ps, Duty Cycle .52.0%.
FIGURE 2 - ACTIVE REGION SAFE AREAS
4.0
r\.
"" "'"
2.0
0::
'"
'"
i
~
r=
1.0
"
.........
"
0.6
"
1
2N3 7;;--'
AND
2N3767
"
.............
I
de
1il
50rn' ......
SOp.:;
"'-. ~ 500 p.:;
">-
1.0rn,
I'-...
........
0.4
"'{..,
......
T-==
2N3767
ONLY _
......
,....,
r--..
..............
~
..Y 0.2
'-.
r---...
-
..........
0:1
0.06
0.04
10
20
30
40
50
60
Ve " COLLECTOR EMITTER VOLTAGE (VOLTSI
4-56
70
80
The Safe Operating Area Curves indicate
Ic·VcE limits below which the device will not
go into secondary breakdown. Collector
load lines for specific circuits must fall
within the applicable Safe Area to avoid
causing a collector·emitter short. (Case
temperature and duty cycle of the excur·
sions make no significant change in these
safe areas.) The load line may exceed the
BVeEovoltage limit only if the collector cur·
rent has been reduced to 20 rnA or less be·
fore or at the BVeES limit; then and. only then
may the load line be extended to the abso·
lute maximum voltage rating of BVeBo. To
insure operation below the maximum TJ.
the power·temperature derating curve must
be observed for both steady state and pulse
power conditions.
2N3766, 2N3767
CUT-OFF CHARACTERISTICS
LARGE SIGNAL CHARACTERISTICS
FIGURE 4 - TRANSCONDUCTANCE
FIGURE 3 - TRANSCONDUCTANCE
\000
700
10
l - t-
/
Vc.~Sv
~
I
100
;
..!i
II
T)
+IO~·C
I--
/
-
TJ I
;
r--
~
+2~.C
/
0.10
I-10-
t= TJ
I~t---
-
-
10
0.6
0.4
1.0
0.8
1.2
0.6
0.4
VIE. BASE·EMITTER VOLTAGE (VOLTSI
'/
,II
Vc.=SV
/
10
'
2.0
~
i
~
0.2
0.2
0.4
0.6
Il
VeE
40V
J
I
I
1/
TJ ~ +17s1c I
1.0
TJ ~ +175"C
I
I
I I
I
;
~
I
I I . : j-...
1.0
~
ts
I I
TJ = +IOO·C
!--
./
I
....... {
I I
-
'"
V
./
I
FIGURE 6 - EFFECT OF BASE-EMITTER RESISTANCE
I VI
/
LL.l
10
7.0
5.0
!!S
•
'7
~
VIE. BASE·EMITTER VOLTAGE IVOLTS)
FIGURE 5 - INPUT ADMITTANCE
30
FORWARD BIAS
REVERSE BIAS
I
0.001
0.2
3.0
/
0.01
TJ ~ -SS·C -
20
~
+IOO·C
..!i
.30
-
7
../
8
50
20
/ II
1/
TJ ~ +175·C
~
II II
'"
70
Ve.~40V
1.0
II
TJ ~ +I7S·C -
7
II
I-- I--
1/1 I
300
200
I
/
500
0.10
T
TJ ~ +IOO·C
I
8
..!i
0.7
I - TJ
0.5 I -
+2S·C
......
0.3
I-
I
I ..,.. ~
TJ ~ -SS·C
0.01
I
0.2
I
II
0.1
0.2
II TJ7+2rCI I
II II
0.6
0.4
0.8
V... BASE·EMITTER VOLTAGE (VOLTS)
0.001
1.0
1.2
4-57
102
10>
104
lOS
R... BASE·EMITTER RESISTANCE (OHMS)
~
11J6
2N3766, 2N3767
FIGURE 7 - CURRENT GAIN
300
I
I
TJ -+l7S"C
200
---;;;;,;
+IOO"C
TJ
100
~
ffi
ll!
'"<.>
-
I
I
--VeE-5V
I--
- :::::;
r
:::~
~
~
50
i
2V
VCE
+2S"C
TJ
J-rJ-rJ-r-
"\
SS"C
TJ
30
...... 1'''"
'-
-1OIii
1"\
"\
20
\
1\
\
10
10
20
50
30
100
70
500
300
200
700
1000
Ie. COllECTOR CURRENT (mAl
a
FIGURE 8 - COLLECTOR SATURATION REGION
2.0
'I"'"
~
g
~
Ie
1.5
lOOmA
Ie
'-
500mA
le-iA
.........
§!
ffi
!::
ill
1.0
.
0.5
'\.
~
:::I
8
I........
"
.....
:::.....
-
:--
~
r0.7
0.5
2.0
1.0
7.0
5.0
3.0
30
20
10
+2S"C
TJ
50
100
70
I,. BASE CURRENT (mAl
FIGURE 10 - TEMPERATURE COEFFICIENTS'
FIGURE 9 - "ON" VOLTAGES
1.2
B.O
I I I I
' - TJ - +2S"C
6.0
1.0
~
g
'"
~
~
0,8 I---
--
-
VIEI ...)@le/I.- 10
I I
V.,@VCE
II
0.6
§!
,.,..
P
~
0.4
VC'(gl) @(ell, - 10
II
0.2
I
I
II
II
V
20
30
50
100
-4.0
300
500
~
rr-
TJ - -SS"C 10 +2S"C t-
I I I I I I
""
I I
100
200
300
400
500
600
700
Ie. COLLECTOR CURRENT (mAl
4-58
,/
TJ - +2S"Clo +17S"C
....
o
1000
Ie. COlLECTOR CURRENT (mAl
1..1
~
SS"C 10 +2S"C
TJ
I
/Iv,forV••
-0.2
J...t"
200
I I
I
I..J...-
II
J
~~
eve fo, VCOlgI)
I""' T
I-
II
I
10
TJ -+2S"Clo+IWC
2.0
~8
II
I I
I I
4.0
~
2V
I
To c,""pute saiu~'\ion vollage.
~.,) @ope,alm,TJ -V.(gl)
+25"C + 1Iv. (ope,alingTJ - 2S"CI
Use approp,iale IIv fo, vollage of inle,e.1. !." I,
Uj" a~p,of'iie c"ve fdr lem)":u,e!,,nre 0: inli'"it.
800
900 1000
2N3766>, 2N3767
TRANSIENT CHARACTERISTICS
(TJ
= 25·C)
FIGURE 12 - TURN·OFF TIME
FIGURE 11 - TURN·ON TIME
I I I I
5000
1000
'"
Ic/l.~
',",-
.~
500
300
~
~
2000
Mt
"\.
100
1000
\.
,,~
r'\
I>
Id
.........
I--""
'I'-.
to
I
1',-1,- \01,
1\
"'-
,
,",-
I\.Vee ~ 80 V!TYPE 2N3767 ONLYJ
~
"
;:::
\
300
"\.
50
i\.
r"-
200
"r"-.
20
"
"
1\
IIII
If
IQ
"-I"-r-.,
100
r-.,
50
10
20
10
30
50
200
100
300
500
1000
20
10
30
50
100
200
300
Ie. COLLfCTOR CURRENT (mAl
Ie. COLLECTOR CURRENT (rnA)
FIGURE 14 - EQUIVALENT CIRCUIT FOR
MEil.SURING DELAY AND RISE TIME
FIGURE 13 - CAPACITANCE
300
200
"
Vcc=30V
30
"
III
"\.
500
'-
"-
"
;:::
I'
TYPE 2N3767
I.
.:\.
~30V. Vo," ~OV
-- Vee = 80 V. Vo• = 2 V
i:\
"\.
200
~
- Vee
"
10
181 -I!~
3000
P.YI.>2t,
RISE TIME"" 0.1 t"
DUTY CYCLE - 2%
Vee
..... r-.
.IPPROX'J111V,.
C"
-
':-...,
V,. _____ --0
"
r-
VOl
·VO• = BASE-EMmER "OFr' BIAS VOLTAGE
.'"
70
FIGURE 15 - EQUIVALENT CIRCUIT FOR
MEASURING STORAGE AND FALL TIMES
1\
50
C••
V,.
r'\
30
0.1
0.2
0.5
1.0
2.0
R.
5.0
10
20
50
100
REVERSE BIAS !VOLTS)
100 < I,
< 500 ~
1,< lsn.
DUTY CYCLE - 2%
4-59
500
1000
2N3771 2N3772
2N6257
HIGH POWER NPN SILICON POWER TRANSISTORS
20 and 30 AMPERE
... designed for linear amplifiers, series pass regulators, and inductive
switching applications.
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
a Forward Biased Second Breakdown Current Capability
ISlb = 3.75 Adc@VCE = 40 Vdc - 2N3771
= 2.5 Adc@VCE = 60 Vdc - 2N3772
= 3.75 Adc@ VCE = 40 Vdc - 2N6257
•
*MAXIMUM RATINGS
Symbol
2N3771
2N3772
2N6257
Unit
Voltage
VCEO
40
60
40
Vdc
Collector-Emitter Voltage
VCEX
50
SO
50
Vdc
Collector·Base Voltage
VCS
50
100
50
Vdc
Emitter-Base Voltage
VEB
5.0
7.0
5.0
Vdc
IC
15
30
10
30
20
30
Adc
IS
7.5
15
5.0
15
5.0
15
Adc
Rating
Coliector~Emitter
Collector Current - Continuous
Peak
Base Current - Continuous
Peak
Total Device Dissipation @TC
Derate above 2SoC
= 2SoC
Operating and Storage Junction
Po
150
0.S55
Watts
W/oC
TJ, Tstg
-65 to +200
°c
Lr~
r~.
Es~1
PLANE
Temperature Range
THERMAL CHARACTERISTICS
2N3771, 2N3772, 2N6257
Characteristic
Thermal Resistance. Junction to Case
1.17
·In?icates JEDEC Registered Data
STYLE 1:
PIN 1. BASE
2.EMITIER
CASE: COLLECTOR
MILLIMETERS
DIM MIN MAX
FIGURE 1 - POWER aERATING
A
200
B
C
11 5
150
125
0
E
F 2990
G 10.7
H 5.33
J 16.64
11.18
Q
3.84
R
-
...........
...........
100
.......
5
"
-
0
t-....
'-..
5
o
o
25
50
75
100
125
635
0.99
150
0.250
~039
-
3040
1.117
II.IB
5.59
17.15
12.19
4.09
26.67
0.420
0.210
0.655
0.440
0.151
-
Collector connected to cast.
CASE 11·01
f'....
175
39.37
21.08
7.62
1.09
3.43
INCHES
MIN MAX
200
TC. CASE TEMPERATURE (DC)
4-60
1.550
0.B3D
0.300
0.043
0.135
1.191
0.440
0.220
0.675
0.480
0.161
1.050
2N3771,2N3772,2N6257
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted)
I
Symbol
Min
Max
Unit
2N3771
2N3772
2N6257
VCEO(sus)
40
60
40
-
Vde
2N3771
2N3772
2N6257
VCEX(sus)
50
BO
50
2N3771
2N3772
2N6257
VCER(susl
45
70
45
Characteristic
OFF CHARACTERISTICS
·Collector-Emitter Sustaining Voltage 11)
(lC
= 0.2 Ade. IB = 0)
Collector-Emitter Sustaining Voltage
(lC
= 0.2 Ade. VEB(off) = 1.5 Vdc. RBE = 100 Ohmsl
Collector-Emitter Sustaining Voltage
(lC
= 0.2 Adc, RBE = 100 Ohms)
·Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE =.50 Vdc, IB = 0)
(VCE = 25 Vde, IB = 0)
·Collector Cutoff Current
(VCE = 50 Vdc, VES(olf) = 1.5 Vdc)
(VCE = 100 Vde, VES(oll) = 1.5 Vde)
(VCE = 45 Vde, VEB(off) = 1.5 Vdc)
(VCE = 30 Vde, VES(off)
= 1.5 Vde, TC = 150°C)
(VCE = 45 Vde, VES(off) = 1.5 Vdc, TC = 150°C)
ICEO
Vdc
-
Vdc
-
mAde
-
10
10
10
-
2.0
5.0
4.0
-
2.0
4.0
5.0
-
5.0
10
5.0
2N3771
2N3772
2N6257
15
15
5.0
60
60
2N3771
2N3772
2N6257
5.0
5.0
5.0
2N3771
2N3772
2N6527
-
mAde
ICEV
2N3771
2N3772
2N6257
2N3771
2N3772
2N6527
• Collector Cutoff Current
10
10
20
mAde
ICBO
(VCS = 50 Vdc, IE = 0)
(VCB = 100 Vde, IE
-
2N3771
2N6257
2N3772
= 0)
.. Emitter Cutoff Current
mAdc
lEBO
(VSE = 5.0 Vdc, IC = 0)
2N3771
2N6257
2N3772
(VBE = 7.0 Vdc, IC = 0)
·ON CHARACTERISTICS
DC Current Gain (1)
(lC = 15 Adc,. VCE = 4.0 Vde)
(lC = 10 Adc, VCE = 4.0 Vdc)
(lc = B.O Adc, VCE = 4.0 Vdcl
-
hFE
(lc = 30 Adc, V CE = 4.0 Vdc)
(lc - 20 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage
VCE(sat)
(lC = 15 Adc, IS = 1.5 Adc)
(lC = 10 Adc, IS = 1.0 Adc)
(lC = 8.0 Adc, IS = 0.8 Adc)
2N3771
2N3772
2N6257
(lC = 30 Adc, IS = 6.0 Adc)
(lC = 20 Adc, IS = 4.0 Adc)
2N3771
2N3772
2N6257
Base-Emitter On Voltage
-
Vdc
2.0
1.4
1.5
-
4.0
4.0
4.0
-
2.7
2.2
2.2
IT
0.2
-
MHz
hIe
40
-
-
Vdc
VSE(on)
(lC = 15 Adc, VCE = 4.0 Vdc)
(lc = 10 Adc, VCE = 4.0 Vdc)
(lc = 8.0 Adc, VCE = 4.0 Vdc)
2N3771
2N3772
2N6257
·DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 1.0 Adc, VCE = 4.0 Vdc, I test
= 50 kHz)
Small:Signal Current Gain
(lC = 1.0 Adc, VCE = 4.0 Vde, f = 1.0 kHz)
SECOND SREAKDOWN
Second Breakdown Energy with Base Forward Biased,
t = 1.0 s (non-repetitive)
(VCE = 40 Vdc)
(V CE
= 60 Vdc)
Adc
ISlb
2N3771
2N6257
2N3772
-Indicates JEDEC Registered Data
(1) Pulse Test: 300 "s, Rep. Rate 60 cps.
4-61
3.75
3.75
2.5
-
2N3771, 2N3772" 2N6257
FIGURE 2 - THERMAL RESPONSE - 2N3771 , 2N3772:2N6257
0
:r3
Z
-
I - 0=0.5
O.Z
r-
--::::::-
I - -9.1
.1f-- f- _0.05
7~ ~ _O.OZ
~~
...."""
I&ii'
-
Inn
pr
l1t=:z __
5_
0.01
rllNGLEI PU~SE
3 ......
Z
"
II
0.0 1
O.OZ
•
0.05
,
1
III
I
0.1
OZ
-
OUTY CYCLE, 0 -11/IZ
E;;;F'"
BJCIII = ,hlBJC
BJC = 0.S75'CIW Max II
I
oCURVES APPLY FOR POWE~=
PULSE TRAIN SHOWN
I
- REAO TIME AT 11
- - TJlpkl- TC = PlpkIBJCIII- -
1.0
0.5
Z.O
5.0
11111
10
ZO
50
zoo
100
1000
500
ZooO
I. TIME Im.l
FIGURE 3 - ACTIVE·REGION SAFE OPERATING AREA - 2N3771 , 2N3772, 2N6267
40
LI
30
~
$
I I
2N317Z, ZN6Z571dcl
20
~
.'"
7.0
~
S.O
I
:; 10
~
III
8
!J
,, , "
,
I I
jl
Zt 37
I
I
I
i'~~ 4~i
-'-
dc'
I
~~,
~.
'
Te' 25'e
SON DING WIRE LIMITED
- - - - - THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCED
I
I I
2.0
1.0
1.0m•
sistor that must be observed for reliable operation; i.e., the tran·
sistor must not be subjected to greater dissipation than the curves
indicate.
~O~i
- -
3.0
1
There are two limitations on the power handling abilitv of a
transistor: 8versQe junction temperature and second breakdown.
Safe operotillg area curves indicate Ie - VeE limits of the tran·
"
Figure 3i. based upon JEOEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided
TJ(pk)
2000C. TJ(~k) may be calculated from the data of
100m.
<
!"I\
Figure 2. Using data of Figure 2 and the pulse power limits of
,1\
IZN3771,2N625~+=
1- 1 2N3772
i-~
5.0 7.0 10
20
30
50 70 100
PULSECURVESAPPLY II
FOR ALL DEVICES
2.0
3.0
Figure 3, T J( pk) will be found to be less than T J( max) for pulse
widths of 1 ms and less. When using Motorola transistors, it is
permissible to increase the pulse power limits until limited by
TJ(max)'
VCE, COLLECTOR·EMIITER VOLTAGE (VOLTS)
FIGURE 4 - SWITCHING T,IME TEST CIRCUIT
FIGURE 5 - TURN,ON TIME
VCC
+30 V
10
5.0
A
~~
r-I-
VCc=30V
lellB = 10
TrZ5 0 e
vBElolf) = 5.0 V
Z.O
+~] --1--,
RB
SCOPE
:g
w
'"
;::
-9.0 V
51
t,.tf~10ns
-4 V
DUTY CYCLE = 1.0%
RB AND RC ARE VARIEO TO. OBTAIN OESIRED.CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE. '9:
MB05300 USEO ABOVE IS ~lilO mA
MS06100 USEO BELOW IB ~100 mA
1.0
o. 5
I,
2 .....
o.
o. I
Id=
0.05
0.0 2
0.0 I
0.3
0.5 0.7 1.0
Z.O
3,0
5.0 7.0
IC. COLLECTOR CURRENT lAMP)
4-62
10
F
~
20
30
2N3771,2N3772,2N6257
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN·OFF TIME
100
100 0
50
Vcc- 3OV
20
ICIIB ~ 10
IBI ~ IB2
TJ ~ 25'C
l
C'b
~1000--
10
w
'-'
Jw
5.0
-'
2.0
,.;::
TJ ~ 15 0 C
"-
1.0
0.5
z
r-
Is
--
0.2
0.1
0.3
If
u
-+-
"
0.5
1.0
2.0
....
5'" 500
I--.
f;;;:
Cob
~ 700
U
3.0
300
1"'-.
5.0
7.0
10
10
100
30
01
01
D.'
IC. COLLECTOR CURRENT (AMP)
FIGURE B - DC CURRENT GAIN
TJ ~ 15O'C
25'C ......
;;:
'" 100
ffi 70
~ 50
i'l
'-'
'"
-55'C
.......
.....
'"~
w
'"
1.6
'"~
1.2
,:-...;
~
t-....
3.0
IC~1.0A
II
100
TJ ~ 15'C
lOA
5.0 A
lOA
5.0
7.0
10
10
I'
0.8
~_
30
\
0
0.01
IC. COLLECTOR CURRENT (AMP)
"
0.4
8
>
1.0
50
'"
~
0.7 1.0
II III
~
"'-
10
0.5
"
~
~ 20
7.0
5. 0
0.3
10
'"
........
3D
2.0
~
VCE=4.0V
r-J.
z
10
FIGURE 9 - COLLECTOR SATURATION REGION
en
200
50
1.0
VR. REVERSE VOL TAGE (VOLTS)
500
I300
1.0
0.01
0.05
0.1
0.2
0.5
1.0
IC. COLLECTOR CURRENT (AMP)
4-63
2.0
5.0
10
•
2N3771,2N3772,2N6257
FIGURE 10 - "ON" VOLTAGES _
2.0
1.6
~0
I
;:;
TJ = 2S'C
iV
VBE( ..,)@llefIB = 10 .
>
:>
VBE@VCE"4.0V
o
•
0.3
~
O.S 0.7
1.0
7.0
~
-1.0
I-
-2.0
ill
10
t- 'eVC far VCE(sat1
w
20
-3.0
0.3
30
-
LUl
eVB lar VSE
I III
O.S 0.7
1.0
2.0
FIGURE 12 - COLLECTOR CUTOFF REGION
10 3
FVCE=30V
102~ ~TJ =+ISO'C
1 +100'C: 1t+2S'C::;:
~
.5
1
0
REVERSE
FORWARD
~ 10- 2
10- 3
-0.4
-0.3
-0.2
-0.1
to.l
+0.2
+0.3
+0.4
VSE. BASE·EMITTER VOLTAGE (VOLTS)
4-64
+O.S
+0.6
L
250C to 1500C
r-
3.0
.1~
ill
L
b--':
-SS'C to 2S'C
I 11111
S.O 7.0
IC. COLLECTOR CURRENT(AMP)
1~
ILL
f' L
V
JII
IC. COLLECTOR CURRENT (AMP)
::(
L
~...!--±:1
'"=>
i
S.O
B
-SS'C to 2S'C
I-
V
3.0
2S'C to IS0'C
+2.0
:3
V
2.0
/
L
..lilll
$ +1.0
V
V~E(~J JIW = 10
'APPLIES FOR Ic/IB" hFEIZ
13
~
'" O.S
<
r-
.s
AIV'
~
w
0.4
3; . +3.0
A
1.2
S
0
FIGURE 11 - TEMPERATURE COEFFICIENTS
+4.0
10
20
3D
NPN
PNP
2N3173 2N6609
16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
COMPLEMENTARY SILICON POWER TRANSISTORS
The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.
III
140 VOLTS
150 WATTS
•
High Safe Operating Area (100% Tested)
150W@100V
CI
Completely Characterized for Linear Operation
III
High DC Current Gain and Low Saturation Voltage
hfe ; 15 (Min) @ 8 A, 4 V
VCE(sat); 1.4 V (Max) @ IC; 8 A, 'B; 0.8 A
III
For Low Distortion Complementary Designs
lr~
r~K
ESEATIN!~
PLANE
• MAXIMUM RATINGS
Rating
Collector Emitter Voltago
Collector· Emitter Voltago
Coliector·Base Voltage
Emitter·Base Voltage
Collector Current - Continuous
- Peak 111
Base Current - Continuous
- Peak III
Total Power Dissipation@ TC
= 25 0 C
Svmbol
Value
Unit
VCEO
VCEX
VCBO
VE80
IC
140
160
Vdc
Vdc
Vdc
Vdc
Adc
18
4
160
7
16
30
15
150
0.855
-65 to +200
Po
Derate above 25°C
Operating and Storage Junction
TJ, Tstg
Waus
W/oC
DC
Temperature Range
OIM
A
B
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
STYLE I:
PIN I. BASE
2. EMITTER
CASE: COLLECTOR
Aqc
I
SVmbol
R9JC
I
Max
Unit
1.17
°C/W
C
D
E
F
G
-Indicates JEDEC Registered Data
(11 Pulse Test: Pulse Width
H
J
= oms, Duty Cycl... l0%.
K
Q
R
PowerBase IS a trademark of Motorola.
4-65
MILLIMETERS
MIN MAX
-
INCHES
MAK
MIN
39.37
21.0B
7.62 0.250
1.09 0.039
- 3.43 29.90 30.40 1.177
10.67 11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
3.84
4.09 0.151
26.67
Collector connected to case.
CASE 11·01
(TO·31
6.35
0.99
-
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
I
2N3773 NPN/2N6609 PNP
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unle•• otherwise noted.)
Charactaristlc
OFF CHARACTERISTICS (1)
"Collector-Emitter Sreakdown Voltage
IIc = 0.2 Ade, IS = 0)
I
*ColiectoraEmitter Sustaining Voltage
IIc =0.1 Ade, VSE(off) = 1.5 Vde, RSE = 100 Ohms)
Collector·Ernitter Sustaining Voltage
Symbol
Min
Max
Unit
VCEO(sus)
140
-
Vde
VCEX(.us)
160
-
Vde
VCER(sus)
150
-
Vde
-
10
-
2
10
IIc = 0.2 Ade, RSE = 100 Ohm.)
·Collector Cutoff Current
•
ICEO
(VCE = 120 Vde, la = 0)
·Collector Cutoff Current
ICEX
(VCE = 140 Vde, VSE(off) = 1.5 Vde
(VCE = 140 Vde, VSE(oll) = 1.5 Vde, TC = 150o C)
Collector Cutoff Current
mAde
mAde
ICSO
-
2
mAde
lEBO
-
5
mAde
(Vca = 140 Vde, IE = 0)
*Emitter Cutoff Current
(VSE = 7 Vde, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
-
hFE
"IIC = S Ade, VCE = 4 Vde)
IIc = 16 Ade, VCE = 4 Vde)
Collector·Emitter Saturation Voltage
15
5
60
-
Vde
Vde
VCE(sat)
"IIC = S Adc, IS =SOO mAde)
IIc = 16 Adc, IS = 3.2 Adc)
VSE(on)
-
1.4
4
2.2
Ihle l
4
-
-
hIe
40
-
-
-
·Base-Emitter On Voltage
IIc =S Ade, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Magnitude of Common·Emitter
Small-Signal, Short-Circuit, Forward Current Transfer Ratio
IIC = 1 A, I = 50 kHz)
·Small-Signal Current Gain
IIc = 1 Adc, VCE = 4 Vdc, I = 1 kHz)
SECOND BREAKDOWN CHARACTERISTICS
Second Sreakdown ColiectO<' Current with Base Forward Biased
t = 1 • (non·repetitive), VCE = 100 V, S"" Figure 12
(1) Pulse Test: Pul.e Width = 300 "', Dutv Cycle" 2%.
"'ndieates JEDEC Registered Data
4-66
2N3773 NPN/2N6609 PNP
NPN
PNP
FIGURE 1 - DC CURRENT GAIN
300
z
:;;: 100
'"....
ffi
a:
a:
~
"'c
~
70
50
FIGURE 2 - DC CURRENT GAIN
I
150°C
200
25°C -to-
30 0
I
1====-55 0 C
150°C
200
r--: ::: ..........
1--1
-25°C
........... ........
0
-55°C
30
VCE = 4 V.
~
20
::--..
VCE = 4 V
10
10
7.0
5.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
7.0
5.0
0.2
20
IC. COLLECTOR CURRENT lAMPS)
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
IC. COLLECTOR CURRENT lAMPS)
FIGURE 4 - COLLECTOR SATURATION REGION
FIGURE 3 - COLLECTOR SATURATION REGION
~ 2. 0
c
J III
I III
~
~
0
1.6
. IC = 4A
IC =4A
~
1.2
~
c
~
~
~
>
I\,
IC =SA
1=
iii
\
o. S
o.4
r- TC = 25°C
o ) '1
IC = 16 A
r-...
-
r-
1'_
-
r--.
0.2
\
\
8
IC = BA
0.3
0.5 0.7
2.0
1.0
TC = 25°C
0
0.05 0.07 0.1
3.0
0.2
FIGURE 5 - "ON" VOLTAGE
II
2.0
/J 1/
g
1.6
J
'"~w
Ic/lS = 10
1.2
~
c 0.8
>
VBEI"t)
>'
-~
25°C
~
150°C
a
0.2
0.3
t;::,
II
V
.'"
1.2
'">
O.B
~
VCEI,,')
'/
0.5 0.7
·1.0
2.0
~
3.0
0.3
0.5 0.7
2.0
1.0
3.0
5.0
>'
0.4
25°C
I I10
5.0 7.0
20
____ I-'"
-
25·C
--
150·C
0.2
IC. COLLECTOR CURRENT lAMPS)
0.3
-
/
..-
0.5 0.7
1.0
2.0
~
150·C
..k1-
I-::::: ;:;-rl
3.0
111-f--
VCEI..t)
5.0 7.0
IC. COLLECTOR CURRENT lAMPS)
4-67
J I'
I
I
I ,I
Ic/lB = 10
VBElsatl
150°C
0.4 I--
"
FIGURE 6 - "ON" VOLTAGE
~c
..'"
........
lB. BASE CURRENT lAMPS)
2.0
1.6
i""-
I.....
-
4
~
I) I
0.05 0.07 0.1
2
lB. BASE CURRENT lAMPS)
~
w
Ilc~II~~
\
c
ffi
Jill
I I'r-..
111
6
5
II
10
20
•
2N3773 NPN/2N6609 PNP
FIGURE 7 - TURN·ON SWITCHING
TIMES - 2N3773. 2N6609
2.0 1_
f=::.,
•
j
w
'"
;::
1.0
O.7
O. Sf-rO. 3 r -
FIGURE 8 - TURN·OFF SWITCHING
TIMES - 2N3773. 2N6609
~~~~~~
5.
°E~2~~?73
3.
of-- '-I ,
--
2N6609
2.Or--~
-
1C-250C
IC/18 - 10
VCE' 30 V
-
O. 2
'.1n!
TC=250C
r-- -IC/18 = 10
- - -- - 'r-
181'182
t=:.::: == VCE
= 30 V
1. o
.j o. 7f:=
~ o.5
=
If
;::
O. 3
J
o. 1
0.07
0.05
o.2
-- - -
0.02 0.2 0.3
0.5 0.7
1.0
2.0
3.0
o. 1
0.07
0.05
0.2
~~
5.0 7.0
10
20
0.3
i='
~
-t
2000
TC' 25°C
7.0
_ 6.0
1--
-- "- -~
I-
"
20
--r-- - t:--Cob
0
.
1""
2.0
10
k:.Cib
0
0
..':" 4.0
3.0
5.0 7.0
F-~~~~~~:
~b
5. 0
3.0
FIGURE 10 - CAPACITANCES - 2N3773. 2N6609
or:F-,2N3773
6609
9.
0--
2.0
IC. COLLECTOR CURRENT (AMPS)
FIGURE 9 - CURRENT·GAIN - BANDWIDTH
PRODUCT - 2N3773. 2N6609
~
--
0.5 0.7 1.0
IC. COLLECTOR CURRENT lAMPS)
:i!
........
Id
0.03
8. 0
-- r;;-r--.
-- r-F--
1.0
0
TC = 25°C
100
0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
1.0
2.0
3.0
5.0 7.0
IC. COLLECTOR CURRENT lAMPS)
10
20
3
50
70 100
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 11 - THERMAL RESPONSE - 2N3773. 2N6609
1.0
.... O. 7e-- ,.'" o. 5
iL
~ffi O. 3
>-N
~~ O.2
r-~
i;i~
:i~ o. 1
cc ~~o.o7pi2 ~
ti ~O.O5
~
-E
0Jcll) = rll) OJC
0.2
-::;; iiIII
----
-
0.1
.05
.02
0JC = 1. 17 0CIW M" .~~ ~ .~_
- 0 CURVES APPLY FOR POWER_
-Inn
PULSE TRAIN SHOWN
; - f--READ TIME AT It
DUTY CYCLE. D= 11/12
I--;::: :;;::;;;0
I--
- -
- TJlpk) - TC' Plpk) OJC(I)I
-
Pi'
0.01
tao.o3 ......
i--""
:!icc
...:
0=0.5
11t=;2-1
fliNG LEI PUrSE
0.0 2
0.0 1
0.02
II
0.05
0.1
III
0.2
0.5
1.0
2.0
5.0
I. TIME 1m.)
4-68
10
1111
20
50
100
200
500
1000
2000
2.N3773 NPN/2N6609 PNP
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
30
20
1"...
~~
......
10
a:-
::;;
~
I-
z
a:
a:
=>
t.)
LLI
a:
0
It.)
LLI
--'
5.0
3.0
2.0
t.)
c.:;
-
......
100/1s=
200/1s=
..... 1.0 ms_
_11JO ms
!\."\.
I'
I\..~
1.0
500 ms
0.5
BONDING WIRE LIMIT
. THERMAL LIMIT
@TCASE = 25 0 C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
0.3
0.2
0.1
0.05
0.03
10/1s~
40/1s_
de
--'
0
.......
... .... ....
......
..... .....
5.0
3.0
7.0
10
20
30
50
70
100
200
300
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate,
Ie - vCE
limits of the tran·
sistor that must be observed for reliable operation: I.e., the transistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 12 is based on TJ(pk) =200 o C;TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pkl < 200°C. At high case
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
FIGURE 13 - POWER DERATING
100
~ 80
'"
'"
t
:t
'"
z
~
I'
,
"- i'..
60
THERMAL ~
DERATING
40
",
'"c:
"-
""-
~ 20
~
40
120
80
Te. CASE TEMPERATURE (OCI
4-69
160
""-
"
200
•
2N3789 thru 2N3792
II
SILICON PNP POWER TRANSISTORS
10 AMPERE
· .. designed for -medium-speed switching and amplifier applications.
These devices feature:
POWER TRANSISTORS
PNPSILICON
60-80 VOLTS
150 WATTS
•
Total Switching Time @ 3 A"" 1 lis (typ)
•
Two Gain Ranges:
hFE (min) = 15 and 30 @ 3 A (2N3789, 2N3790)
25 and 50 @ 1 A (2N3791, 2N3792)
•
Low VCE(sat) = 0.5 V (typ) @ IC = 4.0 A, 16 = 0.4 A
•
Excellent Safe Area Limits
• Complementary NPN types available - 2N3713 thru 2N3716
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continuous)
Svmbol
2N3789
2N3791
2N3790
2N3792
Unit
VCS
60
80
Volts
Volts
VCEO
60
80
VES
7.0
7.0
Volts
IC
10
10
Amps
Base Current (Continuous)
IS
4.0
4.0
Amps
Power Dissipation
Po
150
150
Watts
Thermal Resitance
9JC
1.17
1.17
°C/W
L-________________ • __________
Lr~
r~K
E
Junction Operating and
Storage Temperature Range
-65 to +200
TJ, T stg
FIGURE 1 -
POWER-TEMPER~TURE
SEATlN/~.
PLANE
STYLE 1:
PIN 1. BASE
2. EMIITER
CASE: COLLECTOR
°c
!
DERATING CURVE
160
i!!
~
z
0
~
~
~
~
140
-..........
120
...........
100
..............
80
DIM
..............
60
B
..............
20
"""-..
25
50
75
100
125
150
175
200
Te. CASE TEMPERATURE I'CI
Safe Area Limits are indicated by Figures 15, 16. Both limits are applicable and
must ~e observed.
4-70
INCHES
MIN
MAX
39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67
11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
Q
3.84
4.09 0.151
R
26.67
Collector connected to case.
CASE 11·01
(TO·3)
A
............
40
MILLIMETERS
MIN MAX
C
D
E
F
G
H
J
K
-
6.35
0.99
-
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
~
MAXIMUM RATINGS
2N3789 thru 2N3792
ELECTRICAL CHARACTERISTICS
(Tc
=2S"C unle.. otherwise noted)
Characteristic
2N3789, 2N3791
2N3790, 2N3792
Collector-Emitter Cutoff Current
'(VCE : 60 Vde, VBE : -I. 5 Vde)
2N3789, 2N3791
(VCE : 80 Vde, VBE : -I. 5 Vdc)
(VCE : I'll Vde, VBE : -I. 5 Vdc, TC : 150'C)
2N3790, 2N3792
(VCE : 80 Vde, VBE : -I 5 Vde, TC: 150'C)
ZN3790, 2N3792
All Types
DC Current G'lin*
(IC: 1 Adc, VCE : 2 Vde)
2N3789, 2N3790
2N3791, 2N3792
(IC: 3 Ade, VCE : 2 Vdc)
16
-
I CEX
lEBO
hFE
2N3789, 2N3790
-
=O. 5 Ade)
VCE(sat)
-
2N3791, 2N3792
Base-Emitter Saturation Voltage'"
(IC = 4 Ade, 16 : O. 4 Ade)
2N3789, 2N3790
(IC : 5 Ade, IB : 0.5 Ade)
VBE(sat)-
2N3791, 2N3792
Current Gain
Bandwidth Product
(VCE : 10 Vde, IC = O. 5 Ade, r = I me)
All Type,
60
80
-
2N3789, 2N3790
2N3791, 2N3792
Collector-Emitter Saturation Voltage·
(IC = 4 Ade, IB = 0.4 Ade)
=5 Ade,
VCEO(sus)
2N3789, 2N3791
Emitter-Base Cutoff Current
(V EB : 7 Vde)
(IC
Min
Symbol
Collector-Emitter ~stainillg Voltage'"
(IC : 200 mAde, IB : 0)
IT
Max
-
mAde
I
I
5
5
mAde
5
25
50
90
150
15
30
--
-
1.0
4
--
r\'\.
1.0
Vde
2.0
1.5
-
O. 7
FIGURE 2 - TYPICAL SWITCHING TIMES AND TEST CIRCUIT
VALUES SHOWN FOR
Ie ~ SA, I" ~ -I,,·~ 0.5 A
f - ISOeps, DUTY CYCLE - 2%
............
'I'-"',
I"-30V
~,
"-f',
'I'0.3
0.2
0.1
I
0.2
~
""i:-
if ;~1~13~~e/l1
Te
~
25'C
I
0.3
61!
"I'!:
0.5
0.7
1.0
4W
"\
\.
.-'I
~-
2.0
3.0
5.0
Ie. COllECTOR CURRENT lAMPS)
4-71
-
Vde
·Sweep Test: 1/2 sine wave cycle @ 60 cps.
1.0
Unit
Vde
me
•
2N3789 thru 2N3792
LARGE SIGNAL CHARACTERISTICS - TYPE 2N3789, 2N3790
(PULSE TEST: pulse width ~ 200 lIsee, duty cycle ~ 1%)
FIGURE 3 - TRANSCONDUCTANCE
FIGURE 5 - eURRENT GAIN
10
,
7.0
5.0
3.0
I(
~ 2.0
•
~
I
.E
5.0 H-Hft-++-t-t+t-t+tt-++-I-+I+Hft-t-+~H-t++-t+tt-+-l
"/
Y
3.0 1-ttttt-++-++I-ttttt-++-++H+ttiI.&Y++-t-Hfftttt-+-l
VCE.=2V
Ii'
,. 2.0 H+Ht--t-H-t-H+Ht--t-H-t:.I"J'I-Itt-+-IH-HH+Ht--H
J
~
a
k'"
/.
'"
I
1/
1.0
07
--
I
0.5
-'I
0.3
r-
-'
0.2
o. I
o
I
_
8
~
H+Ht--t-H-t-~~-t-H-t-H+Ht-+-IH-HH+Itt--H
=
+25'C
TJI~ +:75'CI
0.8
1.2
2.0
1.6
V". BASE·EMITTER VOLTAGE IVOLTSI
0.4
0.7
.9 0.5 H+Ht-+-H-t-te.I'I+-+-H-t-H+Ht-+-IH-HH+Itt--H
TJ ~ -40'C
TJ
~
I.O~!~ltmm~~im!~i~~m~~
2.4
2.8
I" BASE CURRENT ImAI
FIGURE 4 - INPUT ADMITTANCE
1000
700
500
~
~
v
h
200
~
{3oISh,,@2V
FROM FIGURE 11
{3, IS FORCED GAIN
lIell,l
TJ ~ +25'C
L
Ve .-2V
300
15
FIGURE 6 - SATURATION REGION
1.0
0.8
'{/
J. V
100
70
"-
50
30
\.. r--
/
20
~
10
"' r--
7.0
5.0
...
3.0
2.0
1.0
I<-
o
I
0.4
'-
o.2
TJ =-40 DC
I
roo--
I
le~5A
I
le- 3A
le~ IA
TJ ~ +25'C
T1- +t5'~
2.0
0.8
1.2
1.6
VIE, BASE·EMITTER VOLTAGE IVOLTSI
0
2.4
2.8
OVERDRIVE FACTOR l{3ol {3,J
NOTE 1. Dashed line indicates metered base
c~rrent
4-72
minus
ICBO
of the tra'lsistor at 17S-C.
2N3789 thru 2N3792
LARGE SIGNAL CHARACTERISTICS - TYPE 2N3791, 2N3792
(PULSE TEST: pulse width"" 200 p.s8C, duty cvcle "" 1%)
FIGURE 7 - TRANSCONDUCTANCE
FIGURE 9 - CURRENT GAIN
0
0
7.0
0
I#'
5.0
~/
3. 0
I(
;;;
~ 2.0
15g;
a 1.0
~~ o. 7
8.9 o. 5
o.3
o.2
VeE 2V
SEE NOTEl
5.0
V-
3.0
VeE~2V
;;;
~ 2.0
iI
15g;
a
I/il
~
~
~ o. 7
II
8.J) o. 5
'-:- TJ ~ -40'C
~
i--t- TJ ~ +25'C
3
r-t- TJI~ +:75'CI
f-
~
it
O. 2
i'-TJ
o
0.4
0.8
1.2
2.0
1.6
VIE. BASE·EMITTER VOLTAGE (VOLTSI
2.4
o.I
2.8
0.1 0.2
FIGURE 8 -INPUT ADMITTANCE
1=
V
200
V V
70
30
5.0 10 20
50 100 200
I,. BASE CURRENT ImlJ
TJ
6
4
/
7.0
5.0
I
3.0
II
2.0
II
I.0
o
11-1
0.4
I'--
le~SA
~
1\
IfA
10
TJ
-tt 't
"1"-
le~13A
I
t---
\.. I--
le- IA
o.2
40'C
!
t- r-TJ~ +2S'C
5
2.0
1.2
1.6
0.8
VIE. 8ASE.fMmER VOLTAGE !VOLTSl
500 1000
Po IS h.,@2V
FROM FIGURE 12
p. IS FORCEO GAIN
l\.....
V", \..(
50
20
1.0 2.0
o. 8
1/ V
100
~
0.5
2L
VeE
300
B
+17S'C
..lliWJ..l i
I.0
700
500
l
-40'C
FIGURE 10 - SATURATION REGION
1000
i
~
t-TJ~ +25'C
;=TJ
o. I
•
~
1.0
0
2.4
2.8
OVERDRIVE FACTOR (Poi Prl
NOTE 1. Dashed line indicates metered base current minus IclO of the transistor at 17S-C.
4-73
IIell,l·
+25'C
~
2N3789 thru 2N3792
FIGURE 11 - CURRENT GAIN VARIATIONS
200
2'113789. 2N3790
VeE = 2V
TJ
-
+25'C
~--40'C
1
FE
'a+ICBO
t"'-
r--.
::--...
t'
~ t--..
i"": ~
30
""'" ~ ~
0
•
I,c 1,1.J
hi
100 ~ T; +175'C
10
0.01
0.03
0.02
0.05
0.07
0.1
0.2
0.5
03
0.7
'c. COLLECTOR CURRENT lAMPS'
1.0
2.0
TJ~
~
3.0
5.0
V'c.-- 2~
II
+25'C
~ ....
7.0
10
FIGURE 12 - CURRENT GAIN VARIATIONS
500
300
TJ
200
~
!
o.
+175'C
+25'C
TJ
z
~
----
_2N3791.2N3792
TJ .. -40'C
100
to~
r-- r-
r--.
r- -
h
le-Iclo
FE=
Is+l cllo
I I
... ::0-
TJ . +25°C
70
..... .......
f:5 50
TJ = +175°C
~
1
~~-
~~
0
..... ;;;:;;i:;:-.
0
I"'~
I0
0.01
0.02
003
0.05
0.07
0.1
0.3
0.2
0.5
'c. COLLECTOR CURRENT lAMPS)
-
=i
3.0
5.0.
7.0
10
+5.0.--..--,---.--,---,--,--..,---,--.----.
ALL TYPES
T
J
II
~ +25'C I I
+4.0
VCE~2V
6
1/
.- ,,-
8 - _.VIE'''''
-
VIE
0.3
10
-.......,.
' - - _,VeE(.atl
0.2
~~
(J.
O. 4
0
0.1
2.0
) "
{J. ~ 'cll, (FORCEO GA'N)
-
-
1.0
FIGURE 14 - TEMPERATURE COEFFICIENTS
FIGURE 13 - SATURATION VOLTAGES
2. 4
0.7
0.5 0.7
\.0
2.0
3.0
II
~
{J.~IO
I-"
S.O 7.0
10
-3.0!:-0--f::---:1:---:f~-f:,--*--f::--:;!-::---:f8.""0--:9!-:.0'--~IO
'c. COLLECTOR CURRENT lAMPS!
'c. COLLECTOR CURRENT lAMPS)
4-74
2N3789 thru 2N3792
SAFE OPERATING AREAS
FIGURE 15 - 2N3789. 2N3791
FIGURE 16 - 2N3790. 2N3792
_.
~
-~f--
-
"",,-,::'
50~
11m, ~\ \ \
1
L;§g:~~i§!~.~~\\~\\~~
~
~--~----~~-+----+----+~~~44----~
.}) 0.5
f----+----t-~__+----+_--_j--_\\\tt_--__j
-==--
'\.
\ \'
'\. \. \\'
OJ t - - - t - - _ j - - - j - - - / - - - t - - 1 I 1 \ t - - - - j
-
02~--~--_+--~r_--+_---r--_t--~
- - .----+---.f-----'l----j
I
01~--L-~--~-~--~--L-~
o
10
20
30
40
50
20
10
70
60
30
50
40
60 .
70.
80
90
VeE, COLLECTOR·EMITTER VOLTAGE (VOlTS)
The Safe Operating Area Curves indicate Ie - VeE limits
below which the device will not go into secondary breakdown.
Collector load lines for specific circuits must fall within the ap·
plicable Safe Area to avoid causing a collector·emitter short,
(Duty cycle of the eXGursions make no significant change in
these safe areas.) To insure operation below the maximum T"
the power·temperature derating curve must be observed for
both steady state and pulse power conditions.
FIGURE 18 - COLLECTOR CUT·OFF CURRENT versus
BASE·EMITTER RESISTANCE
FIGURE 17 - CUT'()FF REGION TRANSCONDUCTANCE
10 0
20
5.0
10
2.0
1
1.0
~
o. 5
15
~
VeE - VCEO
2.0
1.0
0.0 1
+0.6
TJ
•
,!"175~cj
0.5
I
II
.,/
TJ~+IWC
0.2
0.1
0.05
0.02
"...-
5.0
20V
2
_ o. I
-20
TJ ~ :rlOO~.~J
0.05
TJ - +IOO'C
I-'
REVERSE
+0.4
0.02
FORWARD
-0.2
+0.2
V", BASE·EMITIER VOLTAGE !VOLTS)
-0.4
4-75
0.01
10
)K
IK
R", EXTERNAL BASE·EMITTER RESISTANCE IOHMS)
II
•
2N390'2 NPN (SILICON)
3.5 AMPERE
POWER TRANSISTORS
NPN SILICON
HIGH VOLTAGE NPN SILICON TRANSISTORS
400 VOLTS
.. designed for use in high-voltage inverters. converters. switching'
·regulators and line operated amplifiers.
100WATl'S
• High Collector-Emitter Voltage - VCEX = 700 Vdc
• Excellent DC Current Gain hFE = 10 (Min) @ IC = 2_5 Adc
• Low.Coliector-Emitter Saturation Voltage VCE(sat) = 0.8 Vdc (Max).@ IC = 1.0 Adc
•
*MAXIMUM RATINGS
Rating
Symbol
2N3902
Unit
Collector-Emitter Voltage
VCEO
400
Vdc
Collector-Emitter Voltage
VCEX
700
Vdc
VEB
5.0
Vdc
IC
3.5
Adc
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Ie
2.0
Adc
Total Device Dissipation @ T C ::; 75°C
Derate above 75°C
Po
100
1.33
Watts
Operating Junction Temperature Range
TJ
-65 to +150
°c
Tstg
-65 to +200
°c
Storage Temperature Range
STYLE 1;
PIN 1. BASE
2. EMITIER
CASE; COLLECTOR
W/oc
THERMAL CHARACTERISTICS
Characteristic
Symbol
I
Max
Unit
Thermal Resistance, Junction to Case
8JC
I
0.75
°CIW
·1 ndicates JE OEC Registered Data
100
~
....
80
2:
SO
~
0
FIGURE I-POWER DERATING
.......
""
~
iii
C
'"~
MILLIMETERS
DIM MIN MAX
""-......
""- '"
40
~ 20
~
A
B
C
D
E
F
......
o
SO
80
100
120
TC. CASE TEMPERATURE (OC)
G
H
140
J
""
K
Q
ISO
4-76
R
INCHES
MIN
MAX
-
-
-
-
39.31.
1.550
21.08
0.830
7.S2 0.250 0.300
1.09 0.039 0.043
0.135
3.43
29.90 30.40 1.177 1.197
10.S7
11.18 0.420 0.440
5.33
5.59 0.210 0.220
IS.64 17.15 0.S55 0.S75
11.18 12.19 0.440 0.480
4.09 0.151 0.161
3.84
26.67
1.050
Collector connected 1D case,
S.35
0.99
CASE 11-01
TO-3
2N3902
*ELECTRICAL CHARACTERISTICS
(TC ~ 25°C unle .. otherwise noted)
Characteristic
Symbol
Min
Max
325
-
0.25
-
-
2.5
0.5
-
5.0
30
10
90
-
0.8
2.5
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC ~ 100 mAde, IS ~ 0) (See Figure 12)
Vdc
VCEO(sus)
Collector Cutoff Current
(VCE ~ 400 Vde, IS ~ 0)
ICED
Collector Cutoff Current
(VCE ~ 700 Vde, VES(off) ~ 1.5 Vde)
(VCE = 400 Vde, VES(off) ~ 1.5 Vde, TC ~ 125°C)
Emitter Cutoff Current
(VSE = 5.0 Vde, IC = 0)
ICEX
mAde
mAde
mAde
IESO
ON CHARACTERISTICS (1)
DC Current Gain
(lC ~ 1.0 Ade, VCE
(lC ~ 2.5 Ade, VCE
-
hFE
= 5.0 Vde)
= 5.0 Vde)
Collector-Emitter Saturation Voltage
-
-
Base-Emitter Saturation Voltage
(lC ~ 1.0Ade,la - 0.1 Ade)
(lC 2.5 Ade, la 0.5 Ade)
•
Vde .
VCE(satl
(lC = 1.0 Ade,la ~ 0.1 Ade)
(lC = 2.5 Ade, la • 0.5 Ade)
Vde
VaE(satl
-
1.5
2.0
-
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 0.2 Ade, VCE = 10 Vde)
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width,;; 300 p.s, Duty Cycle';; 2.0%.
FIGURE 3 - TURN-ON TIME
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
2. 0
1. 0
o.7
~
O. 5
'"...:
o. 3
;::
R1 50
R.
"
2
I I II
O. I
II II
0.1
['0..
I'..
............
0.2
0.3
0.5
r--
1.0
Ie, COLLECTOR CURRENT lAMP)
4-77
-
""
0.05
5.0% DUlY Cycle
tr'" lOOns
-
/
o.
v•• •
leila =10
TJ = 250 e
I
I-Itd 1@IVfBIOff) • 5.0 Vdc
RL
125
12
6.0V
~r @ ~cci =125 JdC
",
2.0
3.0
5.0
2N3902
FIGURE 4 - THERMAL RESPONSE
1.0
....
~
0.7
~
0.5
«
~
w
0.3
> z
0.2
w'"'
...~~
'"
~ ~
\.
H:
0.1
ffi ~ 0.01
~ ~ 0.05
«w
~~
iiIII
'\.
'\.
0.03
z
'\..
0.01
0.01
0.01 0.03
0.05
0.1
oJC{tl = rltl 0 JC
0=0.5
0.1
0.1
0.05
0.01
0.Q1
SINGLE PULSE
0.1
0.3
o
powtR= pr-nJL
OJC = 0.75 0 CIW Max
CURVES APPLY FOR
PULSE TRAIN SHOWN
REAO TIME AT tl
TJ{pkl- TC = PlpklOJCltl
I I I I I I IIII
1.0
0.5
I
I
1.0
3.0
1::::_
-
-
=
I
10
OUTY CYCLE. 0 = I1/tl
I
1.11
5.0
~'~j
-
10
30
100
50
100
300
500
1000
2000
t. TIME lensl
FIGURE 5 -ACTlVE·REGION SAFE-OPERATING AREA
0
5.0
-~...._
r- TJ = 1500 C
-
2_0
-
...
~
- - - Second Jreakdown Limit:
~ 1.0 __
- - Bonding Wire limit
5
______
Thermal Limit@Tc=75 0 C
~ O.
'"o
~
_
o
Curves Apply Selow Rated SVCEO
2
O.
O. I
"-
1'\.1.0 ms \.~ms
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE rimits of the transistor that
must be observed 'for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate.
t-
~~ms
",.
The data of FigureS is based on TJ{pk) = 1S00C; TC is variable
de'\.
"-
depending on conditions. Pulse curves are valid for duty cycles of
10% providad TJ(pk)S: 150°C. At high case temperatures. thermal
limitations will reduce the power that can be handled to values
less than the' limitations imposed by secondary breakdown.
~b.o5
0.02
0.0 1
5.0
20
10
50
500
200
100
VCE. COLLECTOR-EMITIER VOLTAGE (VOLTS)
FIGURE 6 - TURN-OFF TIME
5.0
TJ = 250 C
FIGURE 7 - CAPACITANCE
Ic/lBI = 10
Iclis = 2.0
--
2.0
300 0
- -
---
'i
;;; 0.5
'"-=
'"
........
0_2
·tf@VCC=125~
1000
!' 50 0
'"'z
;!: 30 0
U
~ 200
:-- ....
""
r--
0.2
0.5
\
I----:Ob
0
30
0.1
1.0
2.0
iJ =12~O~
:--I- Clb
~
-55°C
1.2
O.S
0.2
0.1
0.3
1.0
0.5
2.0
3.0
0.4
VICE(~t)
0.2
0.1
2001--
j
10
89
5.0
13
5.0
•
>
t-125~C
..§. +1. 5
~
~ +1.0
<:;
H:
,5O~ 1=1000C
20
3.0
~ +2.0
1,/
10 0
'"c
2.0
+2. 5
500~TJ=1500C
a
i If/lS ~ 5
I
FIGURE 11 - TEMPERATURE COEFFICIENTS
FIGURE 10 -COLLECTOR CUT-OFF REGION
100 0
15
:;g
1.0
0.5
./
V
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
!....
0.3
II
J
b?-- ~
0.05
5.0
rLI-- v
J
o
5.0
0.05
J
1---......
VSE(sat) @lc/IS= 10
:>
Tr 1500C~ ~
7.0
.!VCE(1..t@IC/IS=
L
10
1'-..1
w
'I
......
V V
10
~
c
2r C
I....--"'"
I--
'"
'"c
~
"'
I...- I-
30
1.6
........ IS: VCE = 5.0 Vdc
1
z
:::>
TJ = 25°C
I'..
:;;:
'"
....
15
:;g
II
TJ=1500C
70
1.0
-0.4
IllUJ..- V
'"'"w
II
Ov FOR VCE(sat;
APPLIES FOR IclIs'i!
.-
;!: 100
......
r-...
0.2
0.3
0.5 0.7
1.0
<:;
"-,
~"!! ~F~
-~2N4J31Althru
2N4233A (NPN)
2N6312 thru 2N63141PNP)
1\
2.0
3.0
.......... Ci~ (A(L( i~pl~~)
'::'Cob-..... ~,
-I~
'-'
z
tf@>VCC= 10 V
II IIII
i"-
-r-
......
w
ts-
tf@VCC=30V
--
200
T~ = ~5ob
II 1111
""'-
5,0
IC, COLLECTOR CURRENT (AMPERES)
;t
;3 70
........
.......
50
30
0.1
_
- --2N4231A thr. 2N4233A (NPN)
.
itr YTi milL
th
I IIIi2
0.2
0.5
1.0
l
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-82
r-.
20
50
100
2N4231A thru 2N4233A NPN, 2N6312 thru 2N6314 PNP
I
NPN
2N4231A thru 2N4233A
PNP
2N6312 thru 2N6314
FIGURE 8 - DC CURRENT GAIN
300
300
II
'I
200
I
I
I--l
TJ = +1150",
.........
~ 100
~
~2So~
50
u
I
u
~ 100
.....
I""-..
~ 30
........
20
10
0.05 0.07 0.1
,,,
-
wi
c
0.2
0.3
It--
z
-
'"
....
~ 70
,
0.5 0.7
....
~
'"
~
~
~
2.0
,
3.0
30
~
20
'\:
.....
......
t-
·WC
c
,
1.0
+2S;C
70
50
u
'"
~~E' = 2.0 ~
I
TJ = +IS0 DC
200
VCE =2.0 V
10
0.05 0.07 0.1
5.0
IC. CO.LLECTOR CURRENT IAMPERES)
0.2
0.3
0.5 0.7
'""'
1.0
~
~
I'~
"~
2.0
3.0
5.0
IC. COLLECTOR CORRECT IAMPERES)
FIGURE 9 - COLLECTOR SATURATION REGION
en
c:;
1.0
c
>
~O. 8
II
II
IC = 100 mA
I
500 mA
~
I
LOA
~
3.0 A
w
'"
<[
'"
c
o
c:;
ffi O. 6
ffi
:::;;;
....
!::
~
I\..
O. 4
\
~
~
~
-I-
8
1.0
2.0
5.0
10
20
8
TJ=2SDC
III
500 1000
0
50
100
200
IC = 100 mA
500 mA
\
1'-....
.U
II
11
II
LOA
3.0A
O. 6
~ 0.4
o
,
c'"
B
j 0.2
11
II
o. 8
<[
c:;
>
1.0
c:;
c
~
>
o. 2
0
1.0
l""5.0
2.0
10
1\
20
TJ = 2S DC
50
II
100
200
500
1000
IS. SASE CURRENT ImA)
lB. SASE CURRENT ImA)
FIGURE 10 - "ON" VOL TAGES
1.4
1.4
TJ
1.2
;;;
i
2S"I C
+--
1.0
c:;
~ 0.8
VBE lsal)
@
~
Iclis - 10
....... !::/"
o. 6
>-
~
c:;
~
o. 4
o. 2
....,
VCEI"I)@ Iclis = 10
o. B
~y
0.
I
1. 0
I
VSE lsall @Iclis = 10
w
~
r0-
o
~.
V
o. 4
",
O. 2
.........
VCElsal)@ Ic/lS - 10
o
0.05 0.07 0.1
0.2
I
0.3
0.5 0.7
1.0
12::
VSE @VCE = 2.0 V
'"~ o. 6
,...., k"
o
>
:..-
VSE at VCE = 2.0 ~
w
'"~
I
TJ'=2h
1. 2
2.0
3.0
0
0.05 0.07 0.1
5.0
IC. COLLECTOR CURRENT IAMPERES)
0.2
0.3
0.5
0.7
1.0
IC. COLLECTOR CURRENT lAMPE RES)
4-83
2.0
3.0
5.0
2N4231A thru 2N4233A NPN, 2N6312 thru 2N6314 PNP
I
NPN
2N4231A thru 2N4233A
,FIGURE 11- TEMPERATURE COEFFICIENT/i
+2.5
'Applies for ICilS" hFE/4
+2.5
~+2.0
'AP!IiBS lor ICilis .. lhFJ/4
'1 I I"
">
.s +1.5
V
~
ffi +1.0
U
~ +0.5
:!::
u
0
'eVC for VCE(sat)
~ ·0.5
S ·1.0
e
(i
-1.
5
:: ·2.0
""
~
+0.5
-
'OVC for VCE(sat)
~ ·0.5
~
~
w
....
~~
3.0
-I-'
/,/'
. /V
·1.0
eVS for VBE
·1.5
-2.0
II
·2.5
0.05 0.01 0.1
5.0
/
·55°C to +150°C
w
,,;'
0.2 0.3
0.5 0.1 1.0
2.0
IC. COLLECTOR CURRENT (AMPERESI
0.2 0.3
0.5 0.1 1.0
2.0
IC. COLLECTOR CURRENT (AMPERES)
3.0
5.0
FIGURE 12 - COLLECTOR CUT·OFF REGION
103
I - - I- VCE = 30 Vdc
1.
-'-TJ -150 0 C
,I'
+1.0
u
f-7
I I
-VCE-30V
ffi
e
·55°C to +150°C
IIII
+1.5
~
1 V
1-.....
oS
w
'- r- 1.55°C to +25°C
I II
I II
P
"> +20.
V
./
I I
f IJ
tl'I SE
·2.5
0.05 0.01 0.1
•
...--
II
=>
~
w
+1~ooh
r'i
+25°C!.
j"
PNP
2N6312 thru 2N6314
!
...
./
10
ffi
2
! -I-TJ = 1500 C
10 1
a:
a:
=>
u
a: 10 01--
~ =1000 C
I--l00 0 C
e
t;
~ ""REVERSE
w
j 10- 1~ FREVERSE
e
FORWARO= ~
FORWARO=
u
-'0- 2 f,-".-- ,--25 0 C
~ =250 C
10'3
-0.4
IC'lfES
IC 'ICES
-0.3
-0.2
-0.1
+0.1
+0.2
+0.3
+0.4
10-3
+0.4
+0.5 +0.6
+0.3
'"e
"-
w
il
~
is
a:
a:
.........
-VCE=30Vdc
.........
IC~ICES ,,;'
~
104
::i
TYPICAL ICES
-VALUES OBTAINEO
103 =~ROM FIGURE 12
~.
~
r-.....
.........
105
~
==
........
,
/
X
IC' 2 ICES
l:l
~
ilia:
r--
20
40
60
120
140
-0.5 -0.6
IC-2ICES
"-
.........
10 5=VCE=30V
==
-
I'..
100
-0.4
__ IC = 10 ICES
I
~.......
"- "-
.........
80
-0.3
IC ~ ICES
~
~,
160
180
-
~ 103
z
a:
w
~
w
.........
0
-0.2
.........
::i
...
~ 102
·0.1
+0.1
FIGURE 13 - EFFECTS OF BASE·EMITTER RESfSTANCE
gJ 101
:z:
ew
"IC' 10 ICES.........
.........
il 106
.........
106
+0.2
VBE. BASE·EMITTERVOLTAGE (VOLTS)
VSE. BASE·EMITTER VOLTAGE (VOLTS)
'" 101
:z:
=
/
<.l
200
a:
"-
"- .........
TYPICAL ICES
VALUES OBTAINEO
FROM FIGURE 12
........
4-84
................
I"-
102
o
20
40
60
80
100
120
f40
TJ. JUNCTION TEMPERATURE (DC)
TJ. JUNCTION TEMPERATURE (DC)
.........
160
ISO
200
2N4398
·2N4399
2N5745
PNP SILICON HIGH-POWER TRANSISTORS
20,30 AMPERE
POWER TRANSISTORS
· .. designed for use in power amplifier and switching circuits.
PNP SILICON
•
40-60-180 VOLTS
200 WATTS
Low Collector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc (2N4398, 2N4399)
•
DC Current Gain Specified - 1.0 to 30 Adc
•
Complements to NPN 2N5301, 2N5302, 2N5303
•
*MAXIMUM RATINGS
Svmbol
2N4398
2N4399
2N5745
Unit
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCS
40
60
80
Vdc
Emitter-Base Voltage
VI'S
20
50
Adc
Ratin.
Collector-Emitter Voltage
Collector Current - Continuous
Continuous
30
50
30
50
IC
Peak
Base Current
IS
7.5
15
Po
5.0
28.6
mW/oC
200
1.15
W/oC
Peak
Total Dovice Dissipation @TA =25 0 C f t
Derate above 2SoC
Total Device Dissipation @TC
Derate above 2SoC
= 2SoC
Vdc
5.0
Po
Adc
Watts
Watts
TJ,Tstg -:...-- -65 to + 2 0 0 -
Operating and Storage Junction
Temperature Range
°c
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
9JC
0.875
°CIW
Thermal Resistance,Junction to Ambient
9JA
35
°C/W
Characteristic
-Indicates JEOEC Registered Dala
• -Molorola guarantees this data in addition to JEDEC Registered Data.
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
TA
10
9.0
g8.0
'"
il;. 7.0
z
0
6.0
>=
;t
iii
TC
200
180
160
""-
140
120
5.0
100
l!!'"
is 4.0
80
3.0
60
~
2.0
40
1.0
20
0
i"'-..
DIM
""'" i'.. "'-
A
TC
............
TA" I'---..
~
o
o
50
-
"' "-
75
100
125
T. TEMPERATURE IOC)
......... ...........
150
-
B
C 6.35
D 0.99
E
F 29.90
~
25
MILLIMETERS
MIN MAX
175
200
G 10.67
H 5.33
J 16.64
K 11.18
n 3.84
R
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67
INCHES
MAX
MIN
-
-
0.250
0.039
1.177
0.420
0.210
0.655
0.440
0.151
CASE 11-01
ITO·3)
Safe Area CurVBS are indicated by Figure 13. All
limits are applicable and must be observed.
CoPVroghl (!;l Motorola Inc . Sl!mlcQnd"~IOr PrOducts CIvIlIan, July 1910
4-85
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
2N4398, 2N4399, 2N5745
ELECTRICAL CHARACTERISTICS (Tc
=
25°C unless otherwise noted)
OFF CHARACTERISTICS
Coliector·Emltter Sustaining Voltagell)
ile '" 200 mAde, IS '" 0)
2N4398
2N4399
2N5745
Collector Cutoff Current
(VeE" 40 Vdc.IS = 0)
2N4398
(VeE'" 60 Vdc, IS = 0)
IV!":,: = 80 Vdc, I = 01
2N5745.
2N4399
Collector Cutoff Current
(VeE" 40 Vdc, VSEloffl = 1 5 Vdcl -.,
(VeE'" 60 Vdc, VSEloffl '" 1.5 Vdcl
(VeE = 80 Vdc, VSEloffl = 1.5 Vdcl
2N4398
2N4399
2N5745
(VeE = 30 Vdc, VSEloffl - 1 5 Vdc, TC = 1S00CI
(VeE = 80 Vdc, VSE(offl = 1 5 Vdc, TC = 1S00 C)
2N4398. 2N4399
2N5745
Collector Cutoff Current
(Ves = 40 Vdc, Ie .. 0)
2N439B
(Vea
OJ
2N4399
(Vee" 80 Vdc, Ie = 0)
2N5745
=
60 Vdc, Ie
=
Emitter Cutoff Current
(VES .. 5 0 Vdc, Ie = 01
ON CHARACTERISTICS
DC Current Galn(11
IIC" 1.0 Adc, VCE = 2.0 Vdcl
•
All Types
IIC = 10 Adc, VCE" 2 0 Vdcl
(lc", 15 Adc. VCE = 20 Vdel
2N4398, 2N4399
{lc '" 20 Adc, VCE = 2 0 Vdel
IIc = 30 Adc, VCE = 4 0 Vdel
2N4398, 2N4399
2N5745
2N5745
Collector·Emltter SaturatIon Voltagell}
flc'" lDAde.ls = 1 o Adel
2N4398, 2N4399
2N5745
IIC'" 15Adc,IS = 15Adcl
2N4398, 2N4399
2N5745
IIC = 2DAdc,Ia = 20Adel
(lc" 20Adc,IS =40Adel
tic" 30 Ade,ls = 6 0 Adel
2N4398, 2N4399
2N5745
2N4398, 2N4399
Sase-EmItter SaturatIon Voltage(11
HC = 10Ade,IS = 1 DAde'··
2N4398, 2N4399
2N5745
HC= 15Ade,Ia = 15Adcl
2N439B, 2N4399
2N5745
IIC = 20Ade,Ia = 2.0 Ade'·"
IIc" 20 Ade, IS = 4.0 Adel
2N4398, 2N4399
2N5745
Base-Emllter On Voltage! 11
(Ie = 10 Adc, VeE" 2.0 Vdcl
lie" 15 Adc, VeE = 2
2N5745
b vdcl
2N4398, 2N4399
lie = 20 Adc, VeE = 4.0 Vdcl
IIc .. 30 Adc, VCE
;=
2N5i45
4.0 Vdcl
2N4398, 2N4399
DYNAMIC CHARACTERISTICS
Current·Galn-Bandwidth Produet(21
flC" 1.0 Ade, VCE = 10 Vde, f = 1.0 MHz)
.0
2N4398, 2N4399
2N5145
2.0
Small·Signal Current Gain
(lC" 1.0 Ade, VCE = 10 Vdc, f = 1.0 kHlI
40
hI,
..
..
..
SWITCHING CHARACTERISTICS (s. Figures 2 and 3)
Rise;rime
Storage TIme
2N4398, 2N4399
2N5145
(VCC" 30 Vde,
IC" 10 Ade,
IS1- IS2=1.0Adcl
Fall Time
0.'
1.0
.
2N4398, 2N4399
2N5145
2N439B, 2N4399
2N5745
I.
2.0
0.6
1.0
'I
-Indicates JEDEC Registered Data_
(1)Pulse Test: Pulse Width ~300 ,",s, Duty Cycle ~2.0%.
"Motorola Guarantees this Data in Addition to JEDEC Registered Data. f2)fT is defined as the frequency at which Ihfel extrapolates to unity,
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 2 - TURN·ON TIME
Vee
;=G:
~ ",-I
20 ns
0-
I
-I
I
FIGURE 3 - TURN-OFF TIME
-30V
3.0
10
10
-30 V
RL
3.0
TO SCOPE
tr~
R,
R.
I
-II.OV
'[-7~20ns
1-10 to 1001"
-:
I
,-10 to 100 1"
Vee
-,
DUTY CYCLE" 2.0 %
DUTY CYCLE
~
2.0 %
fOR CURVES OF FIGURES 5 & 6. R•. RL. & Vee ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
4-86
V"
20ns
2N4398,2N4399,2N5745
TYPICAL TRANSIENT CHARACTERISTICS
TYPICAL "OFF" REGION CHARACTERISTICS
FIGURE 4 - CAPACITANCES
TJ
5.0
3.0
~
~
~
<5
FIGURE 7 - TRANSCONDUCTANCE
10
10
70
- -
2.0
50 ~ ~
30
C,b
C.b
0.5
~
-0
N
Thermal "Resistance, Junction to Case
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
10
g
'" ""
8.0
~
z
~ 6.0
l1i
c
a:
4.0
~
2.0
i
0
20
40
A
B
C
"'"
o
~
E
"-
F
G
H
J
",,-
K
L
M
'""-
60
80
100
120 140 160 180
200
TC. CASE TEMPERATURE (DC)
Safe Area Curves ara Indicatad by Figura 2. All limits Ira applicable and must be ob.rvld.
4-90
P
Q
R
8.89
8.00
6.10
0.406
0.229
0.406
4.83
0.711
0.737
12.70
6.35
450 NOM
1.27
900 NOM
2.54
All JEDEC dimensions and notes apply.
CASE 79-02
TO-39
2N4877
*ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
,I
Chart)Cteristic
Svmbol
Min
Max
60
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC
VCEO(sus)
= 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 70 Vdc, VEB(ofl)
(VCE = 70 Vdc, VEB(off)
Vdc
'CEX
= 1.5 Vdc)
= 1.5 Vdc, TC = l00o C)
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
100
/JAdc
1.0
mAdc
/JAdc
-
100
-
100
/JAde
ON CHARACTERISTICS(l)
DC Current Gain
(lC = 1.0 Adc, VCE
. (lc = 4.0 Adc, VCE
Collector-Emitter Saturation Voltage
(lC
= 4.0 Adc,
IB
-
hFE
= 0.4 Adc)
Base-Emitter Saturation Voltage
(lC = 4.0 Adc, IB = 0.4 Adc)
-
30
20
100
VCE(satl
-
1.0
Vdc
VBE(satl
-
1.8
Vdc
-
100
ns
= 2.0 Vdc)
= 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc
(lc
= 0.25 Adc, VCE = 10 Vdc, f = 1.0 MHz)
= 0.25 Adc, VCE = 10 Vdc, f = 10 MHz)"
SWITCHING CHARACTERISTICS
Rise Time
(VCC
Storage Time
Fall Time
=25 Vdc,
= 4.0 Adc,
IC
IBl
= 0.4 Adc)
tr
I (VCC =25 Vdc, IC = 4.0 Adc,
I IBI = IB2 = 0.4 Adc)
ts
-
1.5
/JS
tf
-
500
ns
-Indicates JEDEC Registered batao
··Motorola guarantees this value in addition to JEDEC Registered Data.
Note1: Pulse Test: Pulse Width '5. 300 liS, Dutv Cycle~ 2.0%.
FIGURE 3 - SWITCHING TIME TEST CIRCUIT
FIGURE 2 - ACTlVE·REGION SAFE OPERATING AREA
10
.
5.0
ie
'"
::;
c'"
l-
ffi to
~O,..
r0-
2.0
.o"m.....
~ 0.5
:::>
'"'cc
'"'j
0
I-
0.02
0.01
=----Pulse 0tjCYl",J rr
1.0
2.0
+25 V
.,
0.2 -TJ= 2000 C
0.1 ~.
;;;;;;;;;- - 0
'"' 0.05
~
OUTYCYCLE .. 2.0%
.Oms
Secondary Breakdown Limited
Bonding Wire limited
Thermal Limitations, TC = 25 0 C
1
3.0
5.0
10
20
,
tOW
Vin
20
30
50
100
o---JVo>/Vo--.--t-i
lN914
VCE, COLLECTOR-EMITTER VOL TAGE (VOLTS)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating erea curves indicate IC-VCE limits of the transistor
that must be obseNed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate,
The data of Figure 2 is based on T J(pk) = 200o C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk)'S 200oC. At high case tem·
peratures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed bV second break'
down.
-'1.0 V
4-91
2N4898 thru 2N4900
MEDIUM-POWER PNP SILICON TRANSISTORS
4 AMPERE
· .. designed for driver circuits, switching, and amplifier applications.
These high·performance devices feature:
GENERAL PURPOSE
POWER TRANSISTORS
•
Low Saturation Voltage - VCE(sat) = 0.6 V max
•
Excellent Safe Operating Area
• Gain Specified to IC
40-BOVOLTS
25 WATTS
IC = 1.0 Amp
@
= 1.0 Ampere
• 2N4900 Complementary to NPN 2N4912
MAXIMUM RATINGS
Symbol
Rating
Collector·Emitter Voltage
VCEO
VCB
VEB
IC'
Colleetor-8ase Voltage
Emitter-Base Voltage
Collector Current
Continuous·
Base Current
....
...
..
IB
Total Device Dissipation T C
= 2SoC
Po
Derate above 250 C
Operating & Storage Junction
2N4898 2N4899 2N4900
40
60
80
40
60
80
5.0
1.0
4.0
III
1.0
T J, Tstg
......
....
25
_0.143_
_
-65 to +200 _
Unit
Vdc
Vde
Vde
Ade
--U--
Adc
Watts
wl"c
°c
Temperature Range
4-P
-B
c
1.------Jl---+
1
'I
E
SEATING PLANE.
THERMAL CHARACTERISTICS
STYLE 1:
PIN I. BASE
.2. EMITTER
CASE: COLLECTOR
Max
Characteristic
7.0
Thermal Reistance, Junction to Case
*The 1.0 Amp maximum Ie value is based upon JEOEC curren~ gain requirements.
---F--J-
The 4.0 Amp maximum value is based upon actual current-handllng capability of the device
(see Figure 5).
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
2,
Vi
20
Q
15
~z
~
"""'-
~
""-
""
~
<3
f--.
15 10 r---
"
~
........
~
'"
ci
<>.
o
o
20
40
60
80
100
120
140
Te. CASE TEMPERATURE 1°C)
..........
160
""
180
200
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
4-92
MILLIMETERS
DIM MIN MAX
B 11.94 12.70
C
6.35 8.64
D 0.11 0.86
1.21 1.91
E
F 24.33 24.43
G 4.83 5.33
H
2.41 2.61
J 14.48 14.99
K 9.14
P
1.21
0.050
Q
3.61
3.86 0.142 0.152
S
0.350
B.89
T
0.145
3.68
U
15.15
0.620
All JEDEC Oimensionsand and Notes Apply.
CASEBO-02
TO"
2N4898 thru 2N4900
ELECTRICAL CHARACTERISTICS
(Te ~ 25'C ""m olh"wo>e ODted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage'
2N4898
(IC ~ O. 1 Ade, IB ~ 0)
2N4899
2N4900
Collector Cutoff Current
(V CE ~ 20 Vdc, IB ~ 0)
-
BVCEO(sus)
,
1CEO
(V CE
~
30 Vde, IB
~
0)
2N4B99
-
(V CE
~
40 Vde, IB
~
0)
2N4900
-
2N4898
Collector Cutoff Current
(V CE ~ Rated VCEO' VBE(off) ~ 1. 5 Vde)
I CEX
12
Z
mAde
0.5
0.5
0.5
mAde
0.1
1.0
-
ICBO
-
0.1
-
lEBO
-
1.0
8
hFE
40
-
0)
Emitter Cutoff Current
(V BE ~ 5.0 Vde, IC ~ 0)
-
-
(V CE ~ Rated VCEO' VBE(o!!) ~ 1. 5 Vde, T C ~ 150' C)
Collector Cutoff Current
(V CB ~ Rated VCB' IE
Vde
-
40
60
80
mAde
mAde
ON CHARACTERISTICS
DC Current Gain*
(IC ~ 50 mAde, VCE
~
1. a Vde)
,
(IC
~
500 mAdc, VCE ~ 1. a Vde)
20
100
(IC
~
1. a Ade, VCE
10
-
-
0.6
-
1.3
-
1.3
3.0
-
-
100
25
-
~
1. 0 Vde)
,
Collector-Emitter Saturation Voltage'
(IC ~ 1. 0 Ade, IB = 0, 1 Ade)
9
11
13
Base-Emitter Saturation Voltage*
(IC ~ 1. a Ade, IB = O. 1 Ade)
11
13
VBE(sat)
Base-Emitter On Voltage*
(IC = 1. a Adc, VCE = 1. 0 Vdc)
11
13
V
*
BE(on)
VCE(sat)
-
Vde
,
Vde
Vde
SMALL SIGNAL CHARACTERISTICS
-
IT.
Output Capacitance
(V CB = 10 Vdc, ~ = 0, I = 100 kHz)
-
Cob
Small-Signal Current Gain
(IC = 250 mAde, VCE = 10 Vdc, I = 1. Jl kHz)
-
hIe
Current-Gain-Bandwidth Product
(IC - 250 mAde, VCE ~ 10 Vde, f
* Pulse Test: PW
=300 /lS,
~
1. 0 MHz)
Duty Cycle
pF
FIGURE 3 - TURN-ON TIME
5.0
Vee ( r - - ' W ' I r - - - - ,
3.0
2.0
lell,
~
~
"'"
Ii"'-- I'-
r-... .......
1.0 Vee
';, (r--'VI/I,--_-I
S. 0.7
30V
V- Vee
I"":: 'el', = 20
t,
0.3
~
I
I
I I
v· - ~ - - -1In
I
I
+-
I
APPROX I
-11 V
;:::
APPROX 9.0 V
t,
Vee
I
_
I
I
t,l--
~
0.2
+ 4.0 V
Ve~
It < 15ns
100 < t, < 500 fLS
t, < 15 ns
Vee
,..,.
'DUTY CYCLE::: 2.0%
4-93
60V,
;tv-
O. 1
0.0 7 VBE{olfl 0
0.05
20
10
TURN·OFF PULSE
-
-
-
10, UNLESS NOTED
TJ = +25'C
TJ = +150'C
bol.
30V
~ 0.5
_
-
=2,0%
FIGURE 2 - SWITCHING TIME EQUIVALENT CIRCUIT
TURN·ON PULSE
MHz
VBE{offj
60Y
2.0V
I'30
50 70 100
200 300
Ie, COLLECTOR CURRENT (rnA)
500 7001000
2N4898 thru 2N4900
FIGURE 4 - THERMAL RESPONSE
~ 1.0
~ 0.7
~
D 0.5
--
0.5
~ 0.3
D 0.2
t;;
D 0.1 l-
0.2
~
~ O. I
D 0.05
ffi 0.07
~ 005
D 0.01
J-I-
/.
I-
~ 0.03
~ 0.02
I-""
~
0.01
0.0\
....-
.IIIBJC
I.O°C/W Max
BJC
BJC 5.8°C/WTyp
oCURVES APPLY FOR POWER
1fLIL
~--l
SINGLE PULSE
ffi'
-
BJelll~'
PULSE TRAIN SHOWN
READ TIME At 11
TJfp~l
Tc
PI,lIBJell)
111111
I I I
DUTY CYCLE. D-~ tllt,
II I
0.02 0.03
0.05
0.1
0.2
0.3
1.0
0.5
11111
2.0 3.0
50
t. TIME (msl
10
20
30
50
200
100
300
500
1000
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
0::
0
I. 0
5. 0
The safe operatmg area curves indicate Ie-VeE
limits of the transistor which must be observed for
relr~ble operation. Collector load lines for speCific
CirCUits must fall below the limits mdlc~ted by the
applicable curve.
The data of Figure 5 IS based upon TJ(p~1
200°C; Tc IS variable dependmg upon conditions.
Pulse curves are valid for duty cycles to 10 % pro·
vlded TJlp\j '5: 200DC. TJlp\} may be calculated
from the data In Figure 4 . At high case tempera·
tures, thermal limitations Will reduce the power
which cah be handled to values less than the Imlita·
tlons Imposed by secondary breakdown.
100/"
1.0ms
'"
::; 3. 0
~
~
~
~
5.0ms
2.0
"
de "-
I. 0
0.7
8 0.5
S!
=
1"'-
1'\
"-
TJ 200°C
r= r- SECONDARY
BREAKDOWN LIMITATION
~
L
THERMAL LIMITATION ~.U. 1 'cHASE-EMITTER DISSIPATION IS _
LIMIT fOR,
0.2 f--- SIGNIFICANT ABOVE Ie = ~.~ 2N489~+2N4899
f--- PULSE DUTY CYCLE ']10%
I II I ~I
U
2N4900
O. 1
20
30
2.0
3.0
5.0
7.0
10
1.0
VeE. COLLECTOR·EMITTER VOLTAGE .IVOLTS}
0.3
f:=
50
70 100
FIGURE 7 - FALL TIME
FIGURE 6 - STORAGE TIME
5.0
2.0
lel l,
~
3.0
f--- -
....
~
le/l,=10
1.0
~ 0.7
~ 0.5
~
TJ
TJ
I"
+25° CL
+l50°C
-...;J. ....
3.0
I"
le/l,
20
30
I,
::i
~
~
300
500 700 1000
4-94
TJ ~ +25°C
TJ ~ +l50°C
Vee=30V
le/l;-IO"
~ 1.0
IH
200
50 70 100
Ie. COLLECTOR CURRENT (mA)
--
111 = 18'2
.....
-
~ 0.5
1,'
20
2.0
:; o. 7
0.3
0.2
O. 1
0.07
0.05
10
-
1"'::::::
~
;=
!ji
20 -
5.0
o. 3
o. 2
O. 1
0.07
0.0 5
\0
20
30
50 70 100
200
(c. COLLECTOR CURRENT (mA)
-
300
500 700 1000
2N4898 thru 2N4900
FIGURE 8 - CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
1000
700
500
1. 0
VeE
~ 300
\,+li5~C
~ 200
I--'
B 100
~
8
III
le~O.IA
0.25 A
\.
2
10
LOA
4
20
10
2.0 3.0 5.0
I I
I I
O.SA
6
30
20 30 50
100 200 300 500
Ie, COLLECTOR CURRENT (mAl
"-
""
0
0.2
1000 2000
0.5
1.0
2.0
5.0
10
20
I" BASE CURRENT (mAl
50
100
200
FIGURE 11 - "ON" VOLTAGE
FIGURE 10 - EFFECTS OF BASE·EMITTER RESISTANCE
10'
5
Ie=- 2xlcES
7
'"
.........
-"
"
•
Ve,~30V
.......
Ie
le!leES
ICES VALUES
;2 4
ffi 10
lOx ICES
:"- "'<
5
"
"
OBTAINED FROM
FIGURE 12
13
J 10
III
[l'J
.......
55"C
TJ
LUI
I III
TJ ~ 2S"C
........
TJ~+25"C
70
50
1.0V ~
I. 2
17
.......
40
""
........
.........
"
80
120
TJ, JUNCTION TEMPERATURE ("CI
6
"
.........
"
10
Vr'I'j'J@le/ J,
.......
160
"
........
V,,@Ve,~2.tiV
V
VCEIIIOtj@lc/l s
0
2.0 3.0 5.0
200
10
2000
"APPLIES FOR lell,-.
-
I-
ICIIB =10
I. 0
~ O. 7
to
~ O. 5
o
ts'= ts
t; Q. 3
~
3.0
2.0
....
1"':::::
::e
FIGURE 7,- FALL TIME
5.0
TJ= 25°C .L
TJ= 150° C
ISI-IS2
~ 1.0
~ O. 7
1/811
;
O. 5
~
0.3
::
O.2
o. I
o. I
O.U 7
30
50
70 100
200
300
SOD 7001000
L,
IC/IB" 20
--
11.:-
ICII~' 10'
TJ =25°C
'TJ =150°C
VCC·30V IS1'IS2
-
-"
0.2
0.0 7
0.0 5
10
20
"""
0.05
10
20
30
50
70
100
200
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
4-102
300
500 700 1000
2N4918 thru 2N4920
TYPICAL DC CHARACTERISTICS
FIGURE 8 - CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
§
1000
700
500
VCE -1.0V_
'"~
~ 30 0
'"....
IEa:
TJ-15~C
20 0
,...
~ 100
u
70
Q
~
I'
II
-55 0C
o. 6
ald:
O. 4
o
....
~
0
~
u
"-
20
.,"
10
20 30
50
100
200 300 500
~
>
1000 2000
a
0.2 0.3 0.5
LOA
"
....
1.0
2.0 3.0
5.0
10
20 30
50
100
200
lB. BASE CURRENT ImAI
FIGURE 11 - "ON" VOLTAGE
10B
1.5
........
10 7
6
........
........
Ic
.......
VCE =30 V
=10 ICES
IC =2x ICES
iCES VA~UES I
OBTAINED FROM
FiGURE 13
r-..
'"; O. 6
o
>
II
II
I'..
a
150
120
2.0 3.0 5.0
10
FIGURE 12 - COLLECTOR CUTOFF REGION
1/
/
L
~
II
+1. 0
I
U +0.5
2
103 1+=
u
~ -0.5
::>
~ -1.
/
a
VCe=30V
a:
~ -l.5
w
• '".... -2.a
250C
REVERSE=IiO -='FORWARO
+0.1
-0.1
TJ = -55 0CTO +100 0C
Q
IC =ICES
104
"eve FOR VCE("II
~
1000C
+0.3
+0.4
2
1
+0.5
VSE. SASE·EMITTER VOLTAGE (VOLTSI
-2.5
2.0 3.0 5.0
.....
eVB FOR VBE
4
+0.2
I I I II
TJ = 1000C 10 1500C
w
a:
~-'10-2
1000 2000
1 Jill
II
~ +1. 5
./
i3
a: 10- I
200 300 500
"APPLIES FOR Ic/IS ~ iVIEI.
r-..
4-105
11O~ UN~ESSI NJTiD
TJ =25'C
,11 TJ = 150'C
I,
30 V
Vee I' 30"V
0.07 VlElo"' 0
0.0 5
20 30
10
O. I
-'Iell;
60 V
~ I'--~+
~
~ 0.5 Vee
h:5 15 ns
100 < I, ,,; 500 p.s
1,:5 15 ns
+UV
Vee -30V
lell, 20
2.0
HB
w
APPROX
3.0
II'
60V.
2.0 V
r-.
50 70 100
200 300
Ie, COLLECTOR CURRENT (mAl
500 700 1000
•
2N4921 thru 2N4923
FIGURE 4 - THERMAL RESPONSE
1.0
0.7 t-- I- D=0.5
0.5
... Ei
~~ 0.3
0.2
_....
0::;
~~ 0.2
0.1
0.05
.... 0:
.... 0
~~ 0.1
t-""
"'w
:i
~ 0.07
:= ~ 0.05
:g~ 0.03
0.02
--
0.01
0.01
•
IfLJ1
0.01
0.05
0.1
0.2
0.3
0.5
,
5.0
1.0ms- f-",100.,
',5.0m" ...
TJ = 150°C
2.0
0:
a::
e
~
o
I
2.0 3.0
5.0
t TIME (ms)
de \..
1.0
O. 7
\.
\
~ D.
3
O.
30
I II
50
I
200 300
100
500
1000
The data of Figure 5 is based on T J(pk) = 150oC;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk)S 150o C. At high case temperatures. thermallimitations will reduce the power that can be handled to values less
than the limitations imposed' by second breakdown.
SECOND BREAKDOWN
LIMITED
- - - BONDING WIRE LIMITED
O.5 - - - - - --THERMALLY LIMITED@TC=250C
-
I I
20
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second break·
down. Safe operating area curves indicate Ie - VCE operation
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
["'.
:S 3.0
!;;;
=>
U
1.0
ACTIVE - REGION SAFE OPERATING AREA
10
7.0
~
T'I"I -Tc=PI"19JcIV
D~rrmlE. D=I,/I,
IIIII
0.02 0.03
DCURVES APPLY FOR POWER .
PULSE TRAIN SHOWN
R£AD TIME All,
I=±\;~
SINGlE PULSE
FIGURE 5 -
1-
9,c!V rlV9JC
9JC = 4.16°C/W Max
PULSE CURVES APPLY BELOW
O.: f = r r V T
2.0 3.0
1.0
II
I II
5.0 7.0
10
20
3D
50
70 100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 6 - STORAGE TIME
5.0
I
;.;
=1=". _10
2.0
-
0.7
=
3.0
I.'
Icll.=20
FIGURE 7 - FALL TIME
5.0
-
3.0
Icll.=2O
.:..~
.....
:; 1.0
0.5
!ill
~
0.3
.oj
0:2
~
r-=r:::r !,
= 25°C
~TJ=ISOOC
0.1
I.. -I..
I.=t,-Itt.
0.07
0.05
so 70 100
200 300
20
30
10
Ie. COllECTOR CURRENT (mAl
......
2.0
~
...
20
~ .......
-
10
0.3
0.2
500 700 1000
~
0.7
0.5 ~Icli.
Icll.
~...,r~
0.1
0.0 7
0.05
10
TJ = 25°C
- - - TJ = lSOoC
Vcc==30V
1.. =1 ..
20
30
so
70 100
200
Ie. COllECTOR CURRENT (mAl
4-106
300
500 700 1000
2N4921 thru 2N4923
FIGURJ' B' - CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
1000
700
500
rr-r-T"TIITT
11m11""""-'---'-''''-'-'
II-r-rrr.--,--,
III ~-'-'-'--'-I""
I IIIII
III O.SA
II
0.8 H-t-,-I--I--I+l*-++H-I+f+1H+1f-H+~-+-j~l+----H
1.0
~
~
1.0V
VCE
~ 30 0
~ 20 0
Ic~O.lA
""
~
0.2SA
~
2l
25°C
1
'*
0.4 H-+-H-t+l-HI--++++-\l-f+1H+1+-H+H~~I+---H
~
SSOC
0
0.6 H-+-H-t+l+l--++mH-f+1H+1I-H+H-+---j-jW-l-l-I----H
§;
r-..
TJ -150°C
100
g 70
0
<.>
~ 0.2I:tH-nlttt\~-ttt--r~itt___j~#;;:j:;:!±t±J:j-H
0
u
>.
II
I0
2.0 3.0 5.0
10
20 30
SO
100
200 300 SOD
O~~~llW~~~~Lll~~~~~~~~
1000 2000
0.2 0.3 0.5
1.0
2.0 3.0 S.O
10
20 30
I,. BASE CURRENT ImA)
Ie. COLLECTOR CURRENT ImA)
FIGURE 10 - EFFECTS OF BASE-EMITTER RESISTANCE
I""
~
~
100
200
1.5
30V-
VCE
" " Ic ~ 10 XICES
I
1.2
7
10
Ic - 2 "CE;-'
~ 10•
....
~
le=lcEs
........
'"
~ 10 5
~
VALUES
t - rim
r- OBTAINED FROM
104 I
f"'....
~
r.....
I'-..
30
V" 1,,'1 @Iclla
~
r.....
r-......
.......
.......
I""....
r-......
60
90
TJ• JUNCTION TEMPERATURE 1°C)
o
2.0 3.0 5.0
10
20 30
50
i+
100°b25°C
1
I III
TJ = 100·C t. 150"C
O'5
·8vc FOR YCEI,.tJ
SsoC TO + 100°C
8
§~O. S
~IC=IJES
~
~-1.0
.L
REVfRSE
-0.1
VCE
~-1.5
30V_ f - 8
4
~ORWPfD
+0.1
+0.2
+0.3
V". BASE-EMmER VOLTAGE !VOLTS)
1000 2000
I I II
§+1.0
1
200 300 500
"APPLIES FOR Icll,";h,,12
<3+ 2.0
ISO°C
~+l. S
•
100
FIGURE 13 - TEMPERATURE COEFFICIENTS
+2. 5
TJ
L
Ic. COLLECTOR CURRENT ImA)
2
10~0.Z
II
VCE 1,,'1 @ IclI, ~ 10
ISO
120
2.0V
0.3
FIGURE 12 - COLLECTOR CUTOFF REGION
2~
10
V,,@VCE
104
I
A
§; 0.6
'=.FIGURE 12
o
/,
0.9
""
~
~
.......
Ti~2S0C
~
~
I
10I
SO
FIGURE 11 - "ON" VOLTAGE
10'
iii
~
i.OA
~
2
+0.4
I
+0.5
Ov. FOR V"
-2.0
S
-2. 2.0 3.0 5.0
4- 107,
10
I
-
20 30 50
100 200 300 500
Ic. COLLECTOR CURRENT ImA)
/
/
1000
2000
•
2N5038
2N5039
20 AMPERE
NPN SILICON TRANSISTORS
· .. fast switching speeds and high current capacity ideally suit these
parts for use in switching regulators, inverters, wide·band amplifiers
and power oscillators in industrial and commercial applications.
•
•
120 and 150 VOLTS
140 WATTS
High Speed - tf = 0.5 J.Ls (Max)
• High Current - IC(max)
•
NPN SILICON
POWER TRANSISTORS
=30 Amps
Low Saturation -"VCE(sat) = 2.5 V (Max)
@
IC = 20 Amps
*MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Symbol
Emitter-Base Voltage
VEBO
IC
ICM
IB
Po
Collector Current - Continuous
Peak III
Base Current - Continuous
Total Device Dissipation @ T C = 25°C
Derate above 25DC
Operating and Storage Junction
Temperature Range
2N50381 2N5039
150 I
120
150 1
120
VCBO
VCEV
7
20
30
5
140
08
-65 to +200
TJ. Tst9
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
WloC
DC
lr~
,~.
E.s~i
THERMAL CHARACTERISTICS
PLANE
Characteristic
Thermal Resistance, Junction to Case
-Indicates JEDEC Registered Data.
111 Pulse Test: Pulse Width": 10 ms, Duty Cycle": 50%.
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
STYLE I:
PIN 1. BASE
Vee
2.EMITIER
+30 V
MILLIM ERS
DIM MIN MAX
Re
2.5
I
Ion
CASE: COLLECTOR
Pw= 20".
Duty Cycle = 1"
A
B
C
D
E
lN4933
2N5038
= 12 Amps
IBI - IB2 ~ 1.2 Amps
-5 V
2N5039
Ie· 10 Amps
IBI - IB2 = 1.0 Amps
-
29.90
G 10.67
H
J I
K 11.18
Q
3.84
F
Ie
-
&.35
0.99
R
-
39.37
21.08
7.&2
1.09
3.43
30.40
11.18
5.59
1 .15
12.19
4.Q9
2B.B7
Coillcto, ..._
INCHES
MIN MAX
0.250
0.039
-
1.177
0.42D
210
O. 5
0.440
0.151
-
to ....
CASE 11.01
(T0.31
4-108
'1.550
0.830
0.3OD
0.043
0.\35
1.197
0.440
0.220
0.675
0.480
0.161
1.D50
2N5038,2N5039
*ELECTRICAL CHARAC"fERISTICS (TC ~ 2So C unless otherwise noted).
SVmbol
Characteristic
Min
Max
90
7S
-
-
SO
50
10
10
-
-
5
15
50
20
20
100
100
VCE(sat)
-
2.5
Vde
VSE(sat)
-
3.3
Vde.
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 200 mAde, IB =0)
VCEO(sus)
2NS038
2NS039
Collector Cutoff Current
(VCE = 140 Vde, VBE(off) = I.S V)
(VCE = 110 Vde, VBE(off) = 1.5 V)
(VCE = 100 Vde, VBE(off) = 1.5 Vde, TC = 150°C)
(VCE = S5 Vde, VBE(off) = I.S Vde, TC = IS0oC)
Emitter Cutoff Current
(VEB = 5 Vde, IC =0)
(VES
ICEX
2N5038
21'15039
2N5038
2N5039
lEBO
= 7 Vile, IC =0)
mAde
-
2N5038
2N5039
Both
Vde
mAde
ON CHARACTERISTICS (1)
DC Current Gain
(lC
(lC
2N5038
2N5039
Collector-Emitter Saturation Voltage
(lC
=20 Ade, IB = 5 Ade)
Base-Emitter Saturation. Voltage
(lC
-
hFE
= 12 Ade, VCE = 5 Vde)
= 10 Ade, VCE =5 Vde)
=20 Ade, IB =S Ade)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
(lC = 2 Ade, VCE = 10 Vde, f = 5 MHz)
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
Storage Time
I (VCC = 30 Vde)
(lC = 12 Ade, lSI
I
(lC = 10 Ade, IBI
I
*Indicates JEDEC Registered Data.
Fall Time
= IB2 = 1.2 Ade)
= IB2 = 1 Ade)
I
2N503S1
tr
I
ts
I
2N5039I
tf
I
-
-
-
I
0.5
I
,.s
I
I.S
,.5
I
0.5
~
~
,.5
(1) Pulse Test: Pulse Width .. 300,.5, Duty Cycle .. 2%.
FIGURE 2 - FORWARD BIAS SAFE OPERATING AREA
.
10: _
_
Ie
~
l-
i
:::>
'"'
'"
0
~
:rt"lt.~d'~.I
2~+=~~~~~=+~~1'~~~
'~~~~-~~B~Dn~d~in~g~W:jre~L~im~i~t::~~~~~~~~~~~
t= - - - - Thermal limit
'"'2 o.5 rSecond Breakdown Limit
02
=¥
•
TC· 25DC +::J:::J:1m=+=+==+2N5039
+
2N5031i=j=
0.1
"
I
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second breakdown .
Safe operating area curves indicate Ie - VeE limits of the transis·
tor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may reduce
the power that can be handled to values less than the limitations
imposed by second breakdown.
23
10
20305070100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-109
•
2N5050 (SILICON)
2N5051
2N5052
MEDIUM-POWER NPN SILICON TRANSISTORS
2 AMPERE
POWER TRANSISTORS
NPN SILICON
· . . designed for untuned amplifier and switching applications.
125-200 VOLTS
40 WATTS
• High Voltage Ratings -'
VCEO = 125, 150 and 200 Vdc
•
•
Low Collector-Emitter Saturation Voltage VCE(sat) -= 1.0 Vdc (Max) @ IC = 0.75 Adc
• Packaged in the Compact, High Efficiency TO-66 Case
*MAXIMUM RATINGS
2N5051 '2N5052
Unit
Symbol
2N5050
VCEO
125
150
200
Vde
Collector-Base Voltage
VCB
125
150
200
Vde
Emitter-Base V oltoge
VER
6.0
Vde
I"
IR
2.0
Ade
Ade
Watts
Rating
Collector-Emitter Voltage
Collector Current - Continuous
Total.Deviee Dissipation @TC=25O C
Derate above 250 C
Po
1.0
40
0.266
ODeratina Junction Temoerature Range
TJ
-65 to +175
DC
T stg
-65 to +200
.oc
Base Current
Storage Temperature Range
W/oc
*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
• Indicates JEOEC Registered Data.
FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
10
1.Oms
5.0
f
"5....
100J.ls
'-.
2.0
-
I
I
R
5.0ms
z
1.0
'"'"=>
u
0.5
w
=TJ"175 oC
de
~ 0.2 ~'---Secondary Breakdown Umited:+=~~t=~k=t=+=
t;
8j
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
:-- - -
~- -
0.1 ~
0.05
u 0.02
-.. -
BondingWire Limited
I'
250'~E~II~11
Thermal
Limitations
=
Applicable
For RatedTe
BVCEO
~~~~~~±~~~~~~~±~~~~~f~3E :~~~~:
~
2N5052
0.01 I-..L....J....JL....L..u..I-...J.-'-'-'-...J....J....J....J...J...L.L.....L...L-....L...J..J
3.0
5.0
10
20
30
50
100
200 300
MILLIMETERS
DIM MIN MAX
8 11.94 12.70
6.35 8.64
0
0.71 0.86
E
1.27 1.91
F 24.33 24.43
G 4.83
5.33
H
2.41
2.67
J 14.48 14.99
K 9.14
p
1.27
Q
3.61
3.86
S
8.89
T
3.66
U
- 15.75
-
VCE. COLLECTOR·EM1TTERVOLTAGE (VOLTS)
The Safe Operating Area Curves indicate IC-VCE limits below
which the device will not enter secondary breakdown. Collector
load lines for specific circuits must fall within the applicable Safe
Area to avoid.causing a catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must be observed for both steady stote and pulse power conditions.
4-110
-
INCHES
MIN
D.470
0.20
0.028
0.050
0.958
0.190
0.095
0.570
0.3&0
MAX
0.500
0.340
0.034
0.075
0.962
0.210
D.l05
0.590
-
- 0.050
0.142 0.152
0.350
0.145
0.620
-
AJI JEDEC Dimensions and end NotlS Apply.
CASESO.()2
TO-&6
2N5050,2N505',2N5052
ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)
I
I
Characteristic
Svmbol
Min
Max
125
150
200
-
-
0_1
-
0_5
-
5.0
-
0_1
25
100
25
-
Unit
"OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
(lC = 200 mAde, IB = 0)
Collector-Emitter Cutoff Current
(VCE = 62_5 Vde, IB = 0)
(VCE
2N5051
2N5052
Collector-Emitter Cutoff Current
(VCE = Rated VCEO, VEB(off)
= Rated
(VCE
mAde
ICEO
2N5050
= 75 Vde, IB = 0)
= 100 Yde, IB = 0)
(VCE
Vde
VCEO(sus)
2N5050
2N5051
2N5052
0_1
0_1
mAde
ICEX
= 1.5 Vde)
VCEO, VEB(offl = 1.5 Vde, TC
= 1500 C)
Emitter-Base Cutoff Current
(VBE = 6_0 Vde, IC = 0)
lEBO
mAde
•
"ON CHARACTERISTICS
OC Current Gain (Note 1)
(lC = 0.75 Ade, VCE = 5.0 Vde)
(lC
(lc
= 1.0 Ade,
= 2.0 Ade,
VCE
VCE
= 5_0 Vdc)
= 5_0 Vdel
5.0
Collector-Emitter Saturation Voltage (Note 1)
(lC = 0.75 Ade, IB = 0.1 Adel
(lC
= 2.0 Adc,
IB
-
hFE
Vde
VCE(satl
5.0
VBE(onl
-
1.2
Vde
fT
10
-
MHz
hfe
25
-
-
Cob
-
250
pF
tr
-
300
ns
Is
-
3_5
tf
-
1.2
= 0.4 Adel
Base-Emitter On Voltage (Note 11
(lC = 0.75 Ade, VCE = 5.0 Vdel
1.0
"DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 250 mAde, VCE = 10 Vde, f
= 5_0 MHz)
Small-Signal Current Gain
(lC = 250 mAde, VCE = 10 Vde, f
= 1.0 kHz)
Common Base Output Capacitance
(VCB = 10 Vde, IE ~ 0, f - 100 kHzl
'SWITCHING CHARACTERISTICS
Rise Time
(VCC = 120 Vde, IC = 750 mAde,
RL = 150 Ohms,
Storage Time
IBl = IB~'= 100 mAdel
.
Fall Time
Indicates JEOEC Registered Data.
Note 1: Pulse Test: Pulse Width
~ 3001'5,
Duty Cycle
""
ILS
~2.0%.
FIGURE 2 - THERMAL RESPONSE
1.0
~
wz
D= 0.6
0.5
~ ~ 0.3
~~
LL w 0.2
'bJ
... 0:
~ ~ 0.1
0.06
oo(:r
0.02
:::;w
:Et-
a: t- 0.0 6
cz
ZW
3~
:E ~ 0.0
e: 0.02~
.....
0.02
~
1----
OJC(tI = '1tlOJC
OJC = 3.76oC/W Max
I I I II II
-I
11112
firmr
0.1
D CURVES APPLY FOR POWER
~ === PULSE
TRAIN SHOWN
=-=
-
DUTY CYCLE, 0 = 11/12 -
p.ql,
0.06
"""
P(P%tfL
...,.-
....... ~
V
0.0 1
0.01
-
-
0.1
w--'
coo(
.....
:;;;"
0.2
0.6
1.0
2.0
I,TIME(ms)
4-111
II III
6.0
10
r--
r--
READ TIME AT 11
TJ\Pkll-IT~ ~ ~(rkIOJC(1
lJ III
20
60
100
200
600
1000
2N5190 thru 2N5192
(SrLlCON)
SILICON NPN POWER TRANSISTORS
... for use in power amplifier and switchi~g circuits, - excellent safe
area limits. Complement to PNP 2N5193, 2N5194, 2N5195
4AMPERE
POWER TRANSISTORS
SILICON NPN
40-80 VOLTS
40 WATTS
"MAXIMUM RATINGS
Rating
•
Symbol
ZN5190 iZN5191izN519Z
I
Base Current
'B
60
60
50
4.0
1.0
Total Power Dissipation@Tc"'2SoC
Derate above 2SoC
Operating and Storage Junction
Temperature Range
Po
40
Collector.Emltter Voltage
Collector-Base Voltage
Emltter·Base Voltage
Collector Current
40
40
VCEO
VeB
VeB
'e
I
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/oC
320
TJ,T stg - - - 6 5 to +150
°e
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
*ELECTRICAl CHARACTERISTICS(TC
I
=
2SoC unless otherwise notedl
I
Characteristic
Symbol
I
Mon
M••
Unit
OFF CHARACTERISTICS
Collector·Eminer Sustaining Voltage (1)
(IC=O.1Adc,IS"'OI
Collector Cutoff Current
(VeE = 40 Vdc, 10 =0)
(VCE =
Vdc, 18 =0)
(VCE = 80 Vdc, 18 =0)
Collector Cutoff Current
(VCE =4'0 Vdc, VEB(off) "loS Vdcl
(VCE=SOVde, VEB(offl= l.S Vdc)
(VCE -80 Vdc, VEB{off) = I.S Vdcl
(VCE "40 Vdc, VEBloffl '" 1.5 Vdc,
TC=12SoC)
lVCE" SO Vde, VE810ffl =1.S Vdc,
TC",2SOC)
lVCE =80 Vdc, VEBloffJ = 1.5 Vde,
TC= 12St>CI
Collector Cutoff Current
lVCB =40 Vdc,le -01
(Vca =60 Vdc,1E =01
(Vca =80 Vdc,le =01
Emitter Cutoff Current
IVBe =S.O Vdc, IC =01
so
Vdc
VCEO(sus)
40
60
80
2N5190
2N5191
2N5192
mAde
ICED
1.0
1.0
1.0
2N5190
2N5191
2N5192
2NS192
2N5190·
0.1
0.1
0.1
2.0
2NS191
2.0
mAdc
ICBO
0.1
0.1
0.1
2N5190
2NS191
2NS192
1.0
(lC = 4.0 Adc. VCE '" 2.0 Vdcl
"Fe
2NS190
2N5191
2NS192
25
25
20
10
10
7.0
2N5190
2NS191
2NS192
Collector-EmItter Saturation Voltage(11
(Ie;; I.S Adc,la =0.15 Adcl
(lc "4.0 Adc, 18 -1.0Adc)
VCE(satl
Base-E mitter 0 n Voltage (1)
. (lC-l.S Adc. Vce ""2.0 Vdc)
VBElonl
100
100
80
Vdc
0.6
1.4
Vdc
1.2
DYNAMIC CHARACTERISTICS
Current·Gain-Bandwidth Product
lie-La Adc, Vce = 10 Vdc. f-1.0 MHz)
F
+:: '
~D
1:
~H
1£--11
E:::IT=1-r
M-Ji..
~r
K
L--lLJ
STYLE I
PIN I. EMITTER
2. COLLECTOR
3. BASE
mAde
lEBO
ON CHARACTERISTICS
DC Current Galnlll
(I C -1.S Adc, VeE = 2.0 V:dcl
t
,,-,~ ---1
2.0
2N5192
ur:l/
~
mAdc
ICEX
2NS190
2N5191
=1
iT
MHz
2.0
(1)Pul .. Ten: Pul .. Width <300 "', Duty CY~I.<2.0%.
-lndicetesJEDEC Regiltered Date
4-112
MILLIMETERS
DIM MIN MAX
A 10.80 11.05
B
7.49
7.75
2.41
2.67
C
0
0.51
0.66
2.92
3.18
F
2.31
2.46
G
2.41
H
1.27
J
0.64
0.38
K 15.11 16.64
30 TYP
M
n 3.76 4.01
R
1.14
1.40
0.89
S
0.64
3.94
U
3.68
V
1.02
INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
30 TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
CASE 77-04
T()'I26
2N5190 thru 2N5192
FIGURE 1 - DC CURRENT GAIN
10
ffi
N
::;
TJ c 1500C
7.0
5.0
-- -
~ 3.0
a:
'" 2.0
~
~ 1.0
ffi
a..,
I
--
z
-L
- r-- '--
r-I-
- -
r-
h
\
==
'VCE = 2.0 V
VCE -10 V
-
f"o
~
r-~
~,
0.7
a: 0.5
a:
-25°C
-55°C
-.......;:
0.3
c
~ 0.2
0.1
0.D04
0.007
0.01
0.02
0.03
0.1
0.2
0.3
IC. COLLECTOR CURRENT lAMP)
0.05
0.5
2.0
1.0
3.0
4.0
FIGURE 2 - COLLECTOR SATURATION REGION
~ 2.0
'"
~
1.6
1\
1\
~
'">
TJ = 25°C
IC= lOrnA
100 rnA
1.0 A
3.0 A
1.2
\
~
~
'"
a:
~_
0.8
\
\
1
\
\
0.4
..,'"
..,w
>
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0 7.0 10
3.0
lB. BASE CURRENT ImA)
FIGURE 3 - "ON" VOLTAGES
20
30
50
70
100
200
5
.s +1.5
1.2
~
'"~
c
,/
~ +1.0
It
w
i
VBElsatlli' IcllB 110
0.8
>
0.005
<3
~ +U.S
'"
",
~
VBE II!> VCE" 2.0 V
IJ~EI.lI)1I!> IcllB = 10
0.01
~
::!
1li
i
"..""
0.02 0.03 0.05
0.1
0.2 0.3 0.5 1.0
IC. COLLECTOR CURRENT (AMP)
'BV for VCElsaO
k'"
..,'"
w
II
0.4
500
l~ppLJsIF&~ IICIIBI" ~FU
TJ = -1i50C to +1500C IL
~ +2.0
TJ = 25°C
~
~
300
FIGURE 4 - TEMPERATURE COEFFICIENTS
+2.5
2.0
1.6
r--f--
r--.....
"
I'..
2.0 3.04.0
4-113
-0.5
-1.0
-1.5
-2.0
-2.5
0.005
'1
Trlw
1
0.01
~
.-
II I
0.02 0.03 0.05 0.1
0.2 0.3 0.5 1.0
IC. COLLECTOR CURRENT lAMP)
2.0 3.04.0
2N5190 thru. 2N5192
FIGURE 5 - COLLECTOR CUT-OFF REGION
FIGURE 6 - EFFECTS OF BASE·EMITTER RESISTANCE
~ 107
:c
g
103
/
r--VCE~30V
2
w
f--TJ = 1500C
If--
~
ili
/
FORWARb=
•
+0.1
1:i
+0.2
+0.3
+0.4
~
+0.5 +0.6
40
20
t2 f-TURN.OFF PULSE
"':::: r-.',
,
oS
;!: 100
U
~
-4.0 V
RSand RC va,ied
to obtain desinld
cu,rent levels
OUTY CYCLE ~ 2.0%
APPROX -9.0 V
Ceb
I
70
50
Cob
30
0.1
0.2 0.3
0.7
0.5
j
1~IIBI_Ih:: ::::::
II
I"-
0.3
~ 0.2
TJ = 250C
1,@VCC=30V
=
.,..,....
j
1,@VCC=10V
w
::E
;=
0.1
1
10
20 3040
H4.
1.0
IJ
0.3
::t-
II@VCC=30V
:;
r-
IS1=IB;t
ICIIS = 10
1s'=ts-I/Blt=
TJ= 250C ::: ~
::::::
.
.11
II@VCC=10V
.........
0.2
0.1
Id@VESlolI) = 2.0 V
0.07
0.05
0.03
0.02
0.05 0.07
2.0
0.7
0.5
;=
-'
0.5
2.0 3.0 5.0
1.0
VR. REVERSE VOLTAGE (VOLTSI
FIGURE 10 - TURN-OFF TIME
FIGURE 9 - TURN·ON TIME
2.0
1.0
160
T)+2150~ I-
"-
Cid« Ceb
I
140
I-
..,zw
RB
I
---I
60
100
120
80
TJ. JUNCTION TEMPERATURE (OCI
200
o-.......""'-...,---i
I
1- __
........
FIGURE B - CAPACITANCE
RC
1 11 <7.0ns
I 100<12<500",
1_ 1. _ 13<15 ns
I I
I
Vin -
.....
102
300
TURN·ON PULSE
APPRO
+11 VA X VCC
1
I
......
.........
(TYPICAL ICES VALUES
OBTAINEO FROM FIGURE 5)
FIGURE 7 - SWITCHING TIME EaUIVALENT CIRCUIT
+11 V
.........
........
~ 103
VBE. BASE·EMITTER VOLTAGE (VOLTS)
I
r--...
......
a:
Vin 0 t- - - - Yin
VEB(olf)
I
-ll--Il
APPROX
--1 13}--
I
IC=2xICES
~
-0.1
VCE = 30V
IcolOx ICES
........
I-
ICES
-0.2
r- -
~
21== =250C
r--...
104
~
W
f==:::!!
........
~
~
1~ =REVERSE
-0.3
.........
IC~ICES
a: 105
1===== =100oC
10- 3
-0.4
.......
~ 106
0.07
0.05
1"10.1
0.2 0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
2.0
3.0 4.0
4-114
0.03
0.02
0.05 0.D7
0.1
0.2 0.3
0.5 0.1 1.0
IC. COLLECTOR CURRENHAMPI
2.0
3.0 4.0
2N5190 thru 2N5192
FIGURE 11 RATING AND THERMAL DATA
ACTIVE-REGION SAFE OPERATING AREA
10
There are two limitations on the power handling ability of a
§"
~
TJ = 150°C
§ 2.0
'"
a
'"
1.0
~
0.5
o
o
.,
I ...... ,
Secondary brea~down limit \
"
1'.
- -
5.0
2.0
10
1\
The data of Figure 11 is based on TJ(pk) = 1500 C; TC is
2N5190 -
O. 1
1.0
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves mdicate.
de
t---Curves.pply below rated VCEO
0.2
Safe operating area curves indicate Ie . VeE limits of the transistor
I"
1\
Thermal limit atTe '" 250 C
Bonding wire limit
'-'
~
transistor; average junction temperature and second breakdown.
5_0 m"'" 1-1.0m."I lOOps
5_ 0
I"
i+
2N5191
2N5192
20
variable depending on conditions. Second breakdown pulse limits
r\
100
50
are valid for duty cycles to 10% provided TJlpk) ~ 1500 C. At high
case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by second
breakdown.
VeE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE 12 - THERMAL RESPONSE
1.0
ffi
N
.... ::;
0.7 =0=0.5
O•5
ffi ~ 0.3
;;;'"
~~ 0.2
==
",-
-
~~
O. 1~
.... w
~ ~ 0.07
tt: ~O.05
~~
==
-::::.-
"'~ 0.03 ~O.02
....
0.0 I
0.01
1
=0 2
-
-0.1
oJClm.xl ~ 3.120 CIW - 2N5190·92
OJClm.xl ~ 2.0BoCIW MJE5190·92
-P
:::;;-
-: ,.".
0.05
0.02
"\1
-Singl. Pulse
0.01
II
I
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
t. TIME OR PULSE WIDTH 1m.)
20
50
100
200
500
1000
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
~~:~
A tram of periodical power pulses can be represented by the model
shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal' resistance of
Figure 12 was calculated for various dutY cycles.
n' n"
----""'1
---!
tl
1
1 '-----
I----
:
I
I
1---111 -------l
DUTY CYCLE 0 =11'"
To find 6JC(d. multiply tho value Qbtainod from Figure 12 by
the stoady state value 6 JC'
Example: \
The 2N5190 is dissipating 50 watts under the following conditions: tl = 0.1 ms. tp = 0.5 ms. (0 = 0.2),
Using Figure 12. at a pulse width of 0_1 ms and 0 = 0_2. tho
reading of rhl. OJ is 0.27.
The peak rise in junction temperature is therefore:
tl
ij;
"T
PEAK PULSE POWER = Pp
4-115
= rid
X Pp X 9JC
= 0.27
X 50 X3.12
= 42.20C
2N5193 thru 2N5195 (SILICON)
SILICON PNP POWER TRANSISTORS
4AMPERE
POWER TRANSISTORS
SILICON PNP
... for use in power amplifier and switching circuits, - excellent safe
area limits. Complement to NPN 2N5190, 2N5191, 2N5192
40-S0VOLTS
40 WATTS
'MAXIMUM RATINGS
Rating
•
Symbol 2NS193
Collector-Emitter Voltage
VCEO
COllector-Base Voltage
VCB
Emitter-Base Voltage
VEB
I 2NS194 I 2NS19S
I
I
40
60
I
I
80
..
.
Vdc
Vdc
Collector Current
IC
40
60
-S.O
.....---4.0
Base C:Jrrent
IB
_+______1.0 - - - - . . .
Adc
Total Power Dissipation@Tc - 25°C
Derate above 2SoC
Po
40
•
-320_
Watts
mW/oC
TJ, T stg
____ -65 to +150 _______
°CIW
Operating and Storage Junction
80
Unit
Vdc
Adc
I·~I
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
-ELECTRICAL CHARACTERISTICS ITC '" 25°C unlessotherwt5e noted'
I
a..rKteristic
I
Symbol
Min
Mu
Unit
OFF CHARACTERISTICS
K
Collector-Emitter Su...inlng Voltaga 111
lie'"' 0.1 Ade,la" 0)
Collector Cutoff Cumnt
(VeE· 40 Vdc.IB c 0)
(VeE· so Vdc, 18 • 01
(VeE'" BO Vdc, Ie· 0)
Vd,
VCEO(susl
2N5193
2N5194
2N5195
40
GO
80
mAde
ICEO
1.0
1.0
1.0
2N5193
2N5194
2N6195
Collector Cutoff Current
(VCE - 40 Vdc, VeEloffl - 1.S Vdd 2N5193
(VCE - 60 Vde. VeEloffl - 1.S Vdd 2N5194
IVCE -80Vdc. VBEloffl-1.SVdcJ 2N5195
(VCE -40Vde. VaEloffl- 1.5Vdc. 2N5193
TC·,25oCI
(VCE· 60 Vdc. VSEloffl- 1.6Vdc. 2N5194
TC • 1250 CI
tVce· 80 Vdc, VBE(off)- f.5Vdc, 2NS195
TC - 1250 CI
ICEX
CoII1C1Of Cutoff CUffent
tVea - 40 Vdc.le· 01
(Vce· 60 Vdc.le - 0)
IVca - 80 Vdc, Ie - 0)
'CBO
2NS193
2N5194
2NS196
~ml".r
Cutoff Current
IVae - 6.0 Vdc, IC • 01
mAde
0.1
0.1
0.1
2.0
2.0
mAd,
0.1
0.1
0.1
mAd,
'eBO
1.0
ON CHARACTERISTICS
DC CulTllnt Glln UI
UC·,.5Adc, Vce· 2.0Vdcl
(lC - 4.0 Adc, VCE - 2.0 VcIc)
2N5193
-Fe
2.
2N6194
25
2N6196
2N5193
20
2N6194
2NalS5
Colltctor-EmltttrSltumlon Vol_ 111
VCEI..d
lie· 1.SAde.la· 0.f6Ack)
Clc -4.0Adc.IB -1.0Ade)
a--e.mltter On Val", t u
IIC· 1.5_, VCE· 2.0Vdol
VeEtonl
100
100
BO
10
10
7.0
---
-
0.6
14:'
-
OYNAMIC CHARACTERISTICS
t.2
-
MILLIMETERS
OIM MIN MAX
A 10.80 11.05
7.49
7.75
2.41
2.67
0.51
0.66
2.92
3.18
G
2.31
2.46
1.27
2.41
H
J
0.38
0.64
K 15.11 16.64
Vdo
M
Vdo
R
S
n
U
v
3.76
1.14
0.64
3.68
1.02
3D TYP
4.01
1.40
0.89
3.94
INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
3D TYP
0.148 0.156
0.045 0.055
o.
0.145
0.040
CASE 77.04
T()'126
CulTllnt-G_n-Blndwldth Product
Cle - '.OAde, VCe.- 10Vdc, f - 1.0MHII
·lndat...IEDEC R..I..,. D_
(1) PuIM Teet: P"I.. WIdthS:aGO A
STYLE 1
PIN 1. EMITIER
2. COLLECTOR
3. BASE
2.0
Duty cyc....ca.CHL
4-116
3
0.155
2N5193 thru 2N5195
FIGURE 1 - DC CURRENT GAIN
10
B 7.0
~ 5.0
:::;
~ 3.0
=
~ 2.0
---
a:
z
~
1.0
5 0.7
TJ·150 0 C
1-.-_
r
-
VCE = 2.0 V
VCE= 10V-
~
'-
'- '- - l"- t-
V
V
250 C
-
~
~ ~~ l_......
-550 C
~ 0.5
-""'"
1:l
... 0.3
c
i
--
0.2
0.1
0.004
0.007
0.01
0.02
0.03
0.05
0.2
0.1
IC. COLLECTOR CURRENT (AMP)
0.3
2.0
1.0
0.5
3.0
4.0
FIGURE 2 - COLLECTOR SATURATION REGION
~ 2.0
o
= 250 C
II 1111111
+2.0
I I II
·APPLIES FOR IcllB c;hFEI2
TJ' -650 C10 +1500 C
.s +1.5
[!!
~
0
/.
1.2
w
;'"
O.S
VBE(sal) IiIIC/lB' 10
>
0.4
0.005 0.01
~
·8VC lor VCE(sat)
w
g;
-0.5
~
f
~~~(satlIl!lIC/18' 10
1.0 .
8Vafor VBE _
1li-1.5
~
""
--
S-1.0
III
0.02 0.03 0.05 0.1
0.2 0.3 0.5
IC. COLLECTOR CURRENT (AMP)
+0.5
w
...o
VaEiii VCE • 2.0 V
0
+1.0
tE
;;
i':
~
........
... 106
10 1
a:
a:
107
-0.2
-0.3
-0.4
~
~
-0.5 -0.6
102
VBE. BASE·EMITTERVOLTAGE IVOLTSI
100
120
60
BO
TJ. JUNCTION TEMPERATURE lOCI
FIGURE 7 - SWITCHING TIME EQUIVALENT CIRCUIT
FIGURE 8 - CAPACITANCE
a:
TURN·ON PULSE
20
40
140
160
VCC
VBEIOfllt}
Vin
0
---
I
APPROX-ll V I
Vin
--II11
I
-1
Yin
12
I
I
I1
I 100~+=~~~t++t~=+=+~~~=++C.+b+t~·=+'~=+~~
+4.0 V
1-+--H+++++r++--+-++H-++r++I-+-+-tC.b
701-+--H+++++r++--+-++H-+++++I-+-+-t+4
I
131TURN·OFF PULSE
11 <7.0 ns
100<12<600,..
13< l~ns
DUTY CYCLE'" 2.0%
~
!~0r-+-+1-r~++++~~-+~~~~++r-+-~-r~
~
.......
\
I I
APPROX
-11 V
~
APPROX
+9.0 V Cid «Cab
I-
--1----+
3001o.:::1-t--HH-+-l+f-m......b.......
+-t-+-+-++++++--l-+++-i
SCOPE
RS
o---'\M-..--I
RS ANO RC VARIEO
TO OBTAIN OESIREO
CURRENT LEI(ELS
50~~~~~~~~~~~~~~~~L-"
0.1
0.2 0.3
FIGURE 9 - TURN·ON TIME
2.0
1~=
IICilBI.
f=
TJ'250 C= ~
1.0
0.7
0.5
!l!
0.2
., 0.1 ....
;::
ttIilVCC" 10
0.07
0.05
td iii VBE(ofl} = 2.0 V
0.03
0.02
0.05 0.07 0.1
0.2
!l!
;::
r--..
""t--..
V-
-
0.3
ICilB"10
II "1s-1181(=
TJ"25oC ~
0.7
0.5
........
:) 0.3
f',I.
IB1"IB~t
Ii
1.0
,....... tt@VCC"30V
........
20 3D 40
FIGURE 10 - TURN-OFF TIME
2.0
:) 0.3
0.5
1.0
2.0 3.0 5.0
10
YR. REVERSE VOLTAGE IVOLTSI
......
t,tlIVCC" 30 V
0.2
-
.....,
r-
t,IIPVCC=10V
o.1
0.07
0.0 5
0.5 0.7
1.0
2.0
0.03
0.0 2
0.05 0.07 0.1
3.04.0
0.2
0.3
0.5 0.7
1.0
Ie. COLLECTOR CURR~NT (AMP)
IC. COLLECTOR CURRENT (AMP)
4-118
2.0
3.04.0
2N5193 thru 2N5195
FIGURE 11
RATING AND THERMAL DATA
ACTIVE-REGION SAFE OPERATING AREA
10
,
'"
5.
TJ
E 2.0
I
=150'C
'"=>'"
~ 1.0
o
~
0.5
o
<.>
--
'.
t\.
\
The data of Figure 11 is based on T Jlpk) =.lS00C. T C is variable
CUNIS applv below rared VCEO
I II
0.2
O. 1
1.0
"-
..........
Secondary breaJdawn limit \
Thermallimil@Tc=25'C
Bonding wire limit
de
-
-
Note 1:
There are two limitations on the power handling ability of a
transistor; average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
LOrn,,", 100",
5.0m$'-;;:
0:: 5.0
I II
5.0
2.0
depending on conditions. Second breakdown pulse limits are valid
\.
2N5193 -
-'
for duty cycles to 10% provided T Jlpk) .. lS00 C. At high..,a,e
temperatures, tl:!ermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
r"\
2N5194
2N5i95
10
50
20
100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 12 - THERMAL RESPONSE
1.0
ffi
N
0.7 ~O'0.5
O•5
0-::;
ffi~ 0.3
1
~~
r--- 1-0.1
0.1
l::::::=: '=:0.05
~ ~ 0.07
0.02'
~ ~
0.05
w-,
?~ 0.03
_l"""
~ 1=0 2
.. <=
~~ 0.2
",o-W
r==
~
0.01
0.01
=3.12'CIW
100
200
"\I
r--- rO.Ol
'"
~O.02
r-
0JC(max)
I-::: ~
I-Singl,Pulso
I
II
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
300
500
1000
I, TIME OR PULSE WIOTH 1m,)
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
~~:~
n' n"
-----II
--I
11
I
I
I--
:
A train of periodical power pulses can be represented by the model
shown in Figure A. Using the model and the device thermal response, the normal ized effective transient thermal resistance of
Figure 12 was calculated for various duty cvcles.
L -_ __
I
I
t--lIf---l
11
DUTY CYCLE D • 11'"
tp
PEAK PULSE POWER' Pp
To find 8JCltI, multiply the value obtained from Figure 12 by
the steady state value 8 JC.
Example:
The 2N5193 is dissipating SO watts under the following conditions: tl = 0.1 ms, tp = 0.5 ms. 10 = 0.21.
Using Figure 12, at a pulse width of 0.1 ms and 0 = 0.2, tha
reading of rltl, 0) is 0.27.
The peak rise in junction temperature is therefore:
"T=r(tI XPpX8JC=0.27 X 50X3.12 = 42.20C
4-119
•
2N5301
2N5302
2N5303
HIGH-POWER NPN SILICON TRANSISTORS
20 AND 30 AMPERE
POWER TRANSISTORS
· .. for use in power amplifier and switching. circuits appl ications.
NPN SILICON
•
•
High Collector·Emitter Sustaining Voltage BVCEO(sus) =80 Vdc (Min) @ IC = 200 mAdc (2N5303)
•
Low Collector-Emitter Saturation Voltage VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
1.0 Vdc (Max)"@ IC = 10 Adc (2N5303)
•
Excellent Safe Operating Area 200 Watt dc Power Rating to 30 Vdc (2N5303)
•
Complements to PNP 2N4398, 2N4399 and 2N5745
40-60-80 VOLTS
200 WATTS
-MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-aa.. Voltage
Collector Current - Continuous
aaseCurrent
Total Device Dissipation lSI TC D 250 C
Derate above 250 C
Symbol
2N5301
2N5302
2N5303
Unit
VCEO
40
60
aD
Vde
Vca
40
60
80
Vde
IC
la
30
30
20
Ade
Po
Operating and Storage Junction
-7.5-
Ade
-200----:-1.14-
Watts
-65 to +200-
-
TJ,Tstu
W/oC
°c
Temparatura Range
THERMAL CHARACTERISTICS
Charactaristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
8,,.,
0.a75
°CIW
ea.. to Ambient
8CA
34
°CIW
Tharmal Resistance,
lr~
r~K
ESEATIN/~
PLANE
i
·lndlc8tesJEDEC Raglnered oete.
FIGURE 1 - POWER TEMPERATURE DERATING CURVE
STYLE I:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERS
DIM MIN MAX
TA TC
8.0 200
i
"'i"
B.O 160
~ti i'..
~
~
~
J
......
4.0 100
A
B
C
D
TA
..... I'-~
is
'"
~
~ 2.050
~I'-
...... ~
E
F
~
G
I'-~
o0
~
~
~
00
~
rn
~
~~
~
~"
~
~
TEMPERATURE I'CI
H
J
K
Q
R
NOTE:
1. DIM "Q" IS DIA.
INCHES
MIN MAX
-
39.37
21.0B
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67
11.18 0.420
5.33
5.59 0.210
16.84 17.15 0.655
11.18 12.19 0.440
4.09 0.151
3.84
- 26.67
Collector connected to case.
6.35
0.99
CASE 11-01
(TO-3)
~120
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
ELECTRICAL CHARACTERISTICS (TC = 250 unless otherwise noted)
Min
Symbol
·OFF CHARACTERISTICS
Collector-Emlner SUltelnlng Voltage (Note 11
(Ie" 200 mAde. 18" 01
,
VeeOllU.)
2N630t
2N5302
2N6303
Collector Cutoff Current
(VCE - 40 Vde. IS - 01
(VCE - 60 Vde. IS - 01
(VCE - 60 Vde. IS - 01
2N6303
ICEX
2N6302
2N6303
Collector Cutoff Current
IVCE - 40 Vd •• VESlalf) - 1.5 Vd •• TC - lso"CI
(VeE" 60 Vdc, VeSfoff)" 1.5 Vdc. TC" lSOOC)
2N6301
IVCE' 60 Vd •• VESlalfl,- 1.5 Vde. TC' lso"CI
2N5303
Collector Cutoff Current
IVCS - 40 Vd•• IE - 0)
ICEX
2N5302
6.0
mAde
-
1.0
1.0
1.0
-
10
mAd.
10
ieBO
2N5302
2N5303
Emitter Cutoff Current
IVse .. 5.0 Vdc. Ie .. 0)
10
mAde
-
2N5301
IVCS - 60 Vde. IE - 01
(Vea '" 80 Vdc. Ie .. 0)
mAde
6.0
6.0
-
2N5301
IVCE - 60 Vd •• VESlalll • 1.5 Vd.1
-
-
2N6301
2N5302
1.0
1.0
1.0
5.0
IESO
ON CHARACTERISTICS
U":'. ,",urrant ~aln _'Note H
·IIC-I.OAde. VCE' 2.0Vde)
"FE
ALL TYPES
2N5303
'lIc - 10 Ade. VCE - 2.0 Vdel
-lie" 15 Adc. VeE" 2.0 Vdc'
IIc • 20 Ade. VCE - 4.0 Yd.1
(Ie" 30 Adc, VeE" 4.0 Vdcl
·Collector-Emitter Saturation Volc.gt INot8')
(Ie" 1DAde. Is" I.DAde)
40
-
IS
15
60
60
2N5301.2N5302
2N5303
5.0
2N6301.2N5302
5.0
VCEI...,
IIc - 20 Ade. IS - 4.0 Adel
2N5301.2N5302
2N5303
2N5303
2N5301.2N5302
2N6303
IIc - 30 Ade.IS - 6.0 Adel
2N5301.2N63D2
(Ie" ,0 Adc. IS .. 1.0 Adcl
IIc' 15 Ade. IS - 1.5 Adel
IIc· 20 Ade. IS • 2.0 Ade)
-Basa-Emitter Saturatton Voltage (Note')
(Ie "'DAde. IS "" I.DAde)
-
(Ie" 15 Adc. 18 .. 1.5 Adc)
(Ie" 20 Adc. 's .. 2.0 AdcJ
IIc - 20Adc.IS - 4.0Ade)
B.... Emitter On Voltaga (Note 1»
IIc - 10 Ade. VCE - 2.0 Vdel
Vde
-
0.75
1.0
1.6
2.0
-
2.0
3.0
ALL TYPES
2N5301.2N63D2
2N6303
-
1.7
-
1.8
2.0
2N5301.2N63D2
2N5303
-
2.5
-
2.5
VSElon)
Vde
2N5303
-
1.5
1.7
IIc - 20 Adc. Vee - 4.0 Vdel
2N5301.2N63D2
2N5303
IIc - 30 Ade. VCE - 4.0 Vde)
2N6301.2N63D2
-
3.0
IIc - 15 Ade. VCE - 2.0 Vde)
mAde
Vd.
VBElsati
IIc -15Ade.la· 1.5Adel
Unit
Vde
-
40
60
60
leeo
Collector Cutoff Current
IVCE - 40 Vd •• VESlalfl - 1.5 Vd.)
(VeE" 60 Vdc. VESlaff) .. 1.5 Vdcl
MIl.
-DYNAMIC CHARACTERISTICS
Current-G.in B.ndwidth Product
IIc-I.OAde. VeE -IOVde.f-I.OMHzl
2.5
2.0
Smell-5ignel Curr.nt Gain
(Ie - 1.0 Adc, Vee - 10 Vdc, f - 1.0 kHz)
MHz
40
·SWITCHING CHARACTERISTICS
(VCC - 30 Vdc. IC - 10 Adc, IS1 - IS2 - 1.0 Adcl
·Indle. . JEDEC Regl'hlred D8U.
Note1: Pul.. T.s1: Pul. Wldth~300,... Duty Cycl.:!:2.Q%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 2 - TURN-ON TIME
VCC
INPUT PULSE
tr<20ns
PW-l0t.lOO,..
DUTY CYCLE - 2.1l'lI
+11 V
-~_--OO-_-J\lI",o
-2.0V
f--~-1.
FIGURE 3 - TURN-OFF TIME
+30 V
' ' rJr
3.0
-l""'''-SC'''D~~
+'
__
VCC
INPUT PULSE
1,<20 ..
PW= lOt. 100,..
DUTY CYCLE' 2.0%
+30V
3.0
TO
SCOPE
tr<20ns
10
0------- -
t,<20 ..
-9.0 V - - - - - 0: COLLECTOR·BASE DIODE
OF 2N3252.
':'
VSS - -4.0 V
4-121
2N5301,2N5302,2N5303
-
FIGURE 4 - THERMAL RESPONSE
1.0
0.7
ffi
~
0.5
:=O'uw
'I.
0.3
> z
0.2
~ ~
0.1
E~
... w
"
i-1::!I
I-'C'
I!!ii
~~O~O.
19;~('1 or
9JC'
, M,x: f~
'0 CURVES APPLY FOR POWER
~
PULSE TRAIN SHOWN
IREAD TIME AT II
~ ~ 0.07
•
~ ~ 0.05
'I. 1'1.
cO'
~~
z
:~.,
0.03
0.02
TJ(pt) - TC' P(pk) 'JCII)
111""111
ISINGLE
0.01
0.02 0.03
0.05
0.1
0.2
0.3
I
II I IIIIII
1.0
0.5
2.0
3.0
5.0
~
Iffi
ZO
- -
1--1-
r....
'"
B
c
~ 0.5
:::
a
u
2.0
3.0
5.0
10
ZO
100
30
50
100
0.5
1.0
TJ"Z5DC
lo/'rT 'O
1.0
0.7
0.5
3.0
5.0 7.0
I'"
.-
r-
1\
-
~
1.0
]
0.7
..
0.3
K
; 0.5
;::
"OVCC"30V
"OVce"IOV
"OVCC"IOV
'dOVOa"Z.OV
0.07
O. I
0.1
O.Z 0.3
0.5
1.0
Z.o 3.0 5.0
10
ZO
30
50
FIGURE 8 - TURN-OFF TIME
O.Z
0.05
0.00 0.05
2.0
VR. REVERSE VOLTAGE (VOLTS)
3.0
2.0
0.1
..... ;.,.Cob - -
300
3.0
0.3
- -
Cib
"-
FIGURE 7 - TURN-ON TIME
.
2000
200
ZN5301
ZN53D2
2N5303
5.0
0'
1000
25~C
TJ"
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
,.;::
500
FIGURE 6 - CAPACITANCE .......s VOLTAGE
z
~
U 500
1C-250 C
0.1
]
300
(ms)
Pul. Duty Cyel. <;10%
O.Z
1.0
200
~ 1000
de
§--- Thermal Limitations
100
...
'" 2.0 f=:±= ~:::,o~~"'kdown Limited
E
r- _. - Bonding Wire Limited
:: 1.0
r
CYCLE. 0 -'I/,Z
50
2000
....
2N5303 ....
10
~ ·2N5301. 5302
5.0
30
3000
100 ..
1.0 ms
5.0ms
50
ii:
~UTY
I
ZO
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
100
~:j
l-
I
10
~ TIME
pffin
~-
10
0.03 0.05
20 30
0.1
II
0.3 0.5
IIIII~
TJ-Z C _
I'BI-'B2
'c/la-IO
",· .. trllBq
VCC "30V
l"1.0
3.0 &.0
Ie. COLLECTOR CURRENT (AMPI
IC. COLLECTOR CURRENT (AMP)
4-122
I,
10
30
2N5301,2N5302,2N5303
FIGURE 10 - COLLECTOR SATURATION REGION
FIGURE 9 - DC CURRENT GAIN
300
T .~;r.r
J I'
200
z
co
I-
~
t::::.:::
100
;(
70
'"
~
..::::::
2SoC
-
50
........
30
~~
w
co
«
K~
1.0
3.0 5.0
10
T
II
n
IC= 2.0 A
~
''""
~
8
\
~
I\..
0.4
0.01
0.02
0.05
Vce- 30 V - f----'
2.0
1.0
IC"2xICES= ~
IC'10xICES f----'
1.6
VOE(~t) @lc/lo=
160
ISO
0.2
0
0.03 0.05
200
3;
0.1
0.3 0.5
1.0
3.0 5.0
IC. COLLECTOR CURRENT (AMP)
II III
1111
rJ = -SSoc to + 17SoC
+2.0
E
;; +1.5
10-1
l000 C
~
250 c
IC'ICES
=R__
-0.3
-0.2
ForMnl
-0.1
0.1
0.2
0.3
"Appli" for IC/IS < hFEl2
ffiU
it
w
'"uw
.fb.S
iii
I-
-1.5
I I'IYS for YSElsat)
~
-2.0
-2.5
0.03 0.05
illl
+1.0
0.4
0.5
10
30
0.6
4-123
If
/
"BVC for YCElsat)
0.1
T
0.3 0.5
1/
1.0
3.0 5.0
IC. COLLECTOR CURRENT (AMP)
YSE. BASE·EMITTER YOLTAGE (YOLTS)
-
V
~ -O.S
t(
~ -1.0
10-2
10-3
-0.4
/
VCE~tl~01ISI.ll~
G +2.5
== F
J
FIGURE 14 - TEMPERATURE COE'FFICIENTS
FIGURE 13 - COLLECTOR CUT-OFF REGION
7'
1/
10
VSE(o.) @I VCE " 2.0v
0.4
140
-;
/
co 1.0
«
!:; O.S
'">
;> 0.6
103
100
10
I
,
w
120
5.0
w~~SOC
TJ.JUNCTION TEMPERATURE (OC)
101
2.0
'"~
102
100
1.0
S 1.41.2
Typical ICES Values Obtained
From Figura 12
SO
0.5
0.2
FIGURE 12 - "ON" VOLTAGES
'" "
60
0.1
10. OASE CURRENT (AMP)
f-- i-lc"'ICES
40
1
>
30
6
20
20A
IDA
O.S
FIGURE 11 - EFFECTS OF BASE·EMITTER RESISTANCE
O'
S.OA
T)= JsJcl
~
10 S
~
lITH
lI-
IC. COLLECTOR CURRENT (AMP)
7
II
II
11111
'"w
.,
.~~
0.3 0.5
1.6
!:;
'" 1.2
>
-SsoC
U.l
~
il
20
10
0.03 0.05
I
'"
VCE"2.0V-
r-
I-_c:.lo-
G
u
-
I
S 2.0
~LI_ VCP 10 V I
~
10
30
2N5336
thru
2N5339
MEDIUM·POWER NPN SILICON TRANSISTORS
5 AMPERE
· .. designed for switching and wide band amplifier applications.
POWER TRANSISTORS
NPN SILICON
Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC =5.0 Amp
• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact TO·39 Case for Critical Space-Limited
Appl ications
•
80-100 VOLTS
6 WATTS
• Complement to 2N6190 thru 2N6193
•
MAXIMUM RATINGS
2N5336 2N5338
2N5337 2N5339
aD
100
VCEO
aD
100
Vca
6.0
VES
5.0
IC
1.0
IS
6.0
Po
34.3
-66 to +200
TJ. Tstg
Symbol
Rating
Collector-Emitter Voltage
Coliector·Sase Voltage
Emitter-Sa.e Voltage
Collector Currant - Continuous
Base Currant
Total Device Dissipation (§I TC ~'260C
Derate above 250 C
Operating and Storage Junction
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mWfOC
DC
Temperature Ranll".
THER",AL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
a~
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
6.0
r'
z
"~
ill
~
.........
~
O
4.0
3.0
.,C
~ 2.0
~
'""'- '~
~
e 1.0
o
o
20
40
60
80
100
120
TC. CASE TEMPERATURE (OCI
140
MILLIMETERS
INCHES
MIN MAX
MIN MAX
8.89 9.40
0.350 0.370
8.00 . 8.51
0.315 0.335
6.10 6.60
0.240 0.260
0.406 0.533 0.016 0.021
0.229 3.18
0.009 0.125
F
0.406 0.483 0.016 0.019
G
4.B3 5.33
0.190 0.210
0.711 0.B64 0.028 0.034
H
J
0.737 1.02
0.029 0.040
K 12.70
0.500
L
6.35
0.250
M
45" NDM
450 NOM
1.27
P
0.050
n
900 NOM
900 NOM
R
2.54
0.100
DIM
A
B
C
D
E
i'-..
.......
160
"-
180
200
-
-
-
-
-
Safa Area Curves ara Indicated bV Figura 5. All limits ere applicable and must be observed.
All JEDEC dimension,.nd notelapply.
CASE 79-02
(T0-39)
4-124
2N5336 thru 2N5339
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
I
I
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
.
IIc = 50 mAde, 18 = D)
Fig. No.
Symbol
-
8VCEO(sus)
2N5336, 2N5337
2N5338,2N5339
12
ICEX
2N5336, 2N5337
2N5338, 2N5339
2N5336,2N5337
2N5338, 2N5339
-
IC80
2N5336,
2N5337,
2N5336,
2N5337,
2N5336,
2N5337,
IIc = 2.0 Adc, VCE = 2.0 Vdc)
IIc: 5.0 Adc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage
.
.
VCE(sat) *
11,13
V8E(sat)
Vde
-
/.lAde
100
100
-
10
10
1.0
-
1.0
/.lAde
mAde
/.lAde
-
10
10
-
100
30
60
30
60
20
40
-
hFE *
2N5338
2N5339
2N5338
2N5339
2N5338
2N5339
9,11,13
-
Unit
/.lAde
lEBO
8
IIc = 500 mAde, VCE = 2.0 Vdc)
Mex
-
-
2N5336, 2N5337
2N5338, 2N5339
ON CHARACTERISTICS
DC Current Gain *
Base-Emitter Saturation Voltage
IIc = 2.0 Ade, IB = 0.2 Adc)
lie = 5.0 Adc, Is = 0.5 Adc)
ICED
2N5336, 2N5337
2N5338, 2N5339
Collector Cutoff Current
(VC8 = 80 Vde, IE = D)
(VC8 = 100 Vde, IE = D)
Emitter Cutoff Current
(V8E = 6.0 Vde, IC = D)
IIc = 2.0 Adc, IB = 0.2 Adc)
IIc = 5.0 Adc, 18 = 0.5 Adc)
80
100
-
Collector Cutoff Current
(VCE = 75 Vde, 18 = D)
(VCE = 90 Vde, 18 = D)
Collector Cutoff Current
(VCE = 75 Vde, VE8(off) = 1.5 Vde)
(VCE = 90 Vde, VEB(off) = t.5 Vde)
(VCE = 75 Vde, VEB(off) = 1.5 Vde,
TC = 150°C)
(VCE = 90 Vde, VEB(off) = 1.5 Vde,
TC= 1500 C)
-
.
Min
-
-
120
240
-
Vdc
.
-
-
0.7
1.2
-
1.2
1.8
30
-
-
250
-
1,000
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
lie = 0.5 Adc, VeE = 10 Vdc, f = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Input Capacitance
-
fT
7
Cob
7
MHz
pF
pF
Cib
(VBE = 2.0 Vdc, IC = 0, f': tOO kHz)
SWITCHING CHARACTERISTICS
Delay Time
(Vee = 40 Vdc, VEB(off) = 3.0 Vdc,
IIC = 2.0 Ade,lBt = 0.2 Adc)
2,3
Rise Time
Storage Time
(VCC = 40 Vdc, IC = 2.0 Adc,
2,6
Fall Time
IBt = IB2 = 0.2 Ade)
*Pulse Test:
-
-
100
100
ns
tr
Is
-
2.0
J.IS
200
ns
Id
tf
ns
Pulse W,dth" 300 /.IS, Duty Cycle" 2.0%.
FIGURE 3 - TURN'()N TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
-11.6 V
'62
10
Vee
+40 V
5.0
2.0
20
1.0
~
,.;:
w
lN914
"
i I'
"' ,..,.
0.5
tr@VCC=20V
0.1
::::::::
0.01
0.01
4-125
,..,.
'" ....
td@ VE8(off) - 4.0 V
--.....
0.02
-3.3 V
TJ = 25 0 e
td@VE8(off) = 6.0 V
0.2
0.05
le/18= 10
tl~ Vee 80
0.02
0.05
0.1
0.2
0.5
1.0
2.0
Ie, eOLLECTOR CURRENT (AMPS)
5.0
10
2N5336 thru 2N5339
FIGURE 4 - THERMAL RESPONSE
1.0
ffi
0.7
en
0,5
a: w
.....
...,
wz
0.3
z
<
~
0-0.5
g 0.2
~ ~
0.1
w~
0« 0.07
~ ~ 0.05
-
<"
~."'" 0.03
0.02
Z
~
0.01
0.01
•
I-
0.02
-- "-
w,",
o
-
0.1
0.05
w~
'JLfl
t-J
~
SINGLE
PULSE lk)
0.D1
SINGLE PULSE
'J
0.02 0.03
+=
OJC(t) - ,(I) OJC •
OJC - 29.2 o CIW Max
>--
0.2
0.2
TJ(pk) - TC = P(pk) OJC(I)
DUTY CYCLE. D = '1/'2
IIIII
I
0.05 0.07 0.1
D CURVES APPLY FOR POW ER
PULSE TRAIN SHOWN
READ TIME AT'I
.
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
I
III
3D
50
I III 111
70 100
200 300
500 700 1000
'. TIME OR PULSE WIDTH (m,)
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
10
5.0
~
:! 2.0
"
....
a'toi
to
13
to
0
~
There are two limitations on the power han·
dling abilityof a transistor: junction temperature
and secondary breakdown. Safe operating area
100~,
1.0ms
curves indicate IC-VCE limits of
......
1.0 ETJ - 200 0 C
5.0ms
0.5
0.1
0
..., 0.05
f~ ~
~-
_ _ _ _
- - - -
Secondary Breakdown Limited
Bonding Wire Limited
Thennal Limitations Te - 25°&
Pulse Duty Cycle ~ 10%
. Applicable for Rated BVCEO
!2
0.02
2NS336.37
2NS338.39
2.0 3.0
5.0 7.0 10
20
3D
50 70 100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
0.01
1.0
down.
FIGURE 6 - TURN-oFF TIME
10
7.0
5.0
3.0
2.0
j
W
";:::
-'
1.0
0.7
0.5
0.3
0.2
0.1
0.D7
0.05
0.03
0.02
FIGURE 7 - CAPACITANCE versus VOLTAGE
1000
-
"
~
.,@VCC BOV
r-- -,,@VCC-20V
0.01
0.01
-
IBI = 182
700
IcllB = 10
SOD
TJ=2S oC
W
...,
300
z
g.200
~
r-...
-
r--.
Cib
r--.
:'i
70
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT lAMPS)
50
1.0
-
f- TJ= ~solC
-
...... 1--.
100
0.02
transistor
The data of Figure 5 is based on TJ(pk) =
'20o"C; T C is variable depending on cond)tlons.
Pulse curves are valid for duty cycles of 10% providedTJ(pk) ':20o"C. TJ(pk) maybecelculated
from the data in Figure 4. At high case tem,
peratures, thermal limitations will reduce the
power that can be handled to vilues Ie.. than
the limitations imposed by secondary break-
de
0.2
t~e
that must be observed for reliable operation;
i.e., the transistor must not be subjected to
greater dissipation than the 'curves indicate.
2.0
3.0
5.0 7.0
10
Cob
20
3D
VR. REVERSE VDLTAGE (VOLTS) .
4-126
50 70 100
2N5336 thru 2N5339
FIGURE 8 - DC CURRENT GAIN
c
~
-
C-.
z 300
<1
100
u
u
~
VCE 1.0 V
VCE-IOV
'"
....
~=>
FIGURE 9 - COLLECTOR SATURATION REGION
_.
1000
700
500
TJ
~
~
100
70
50
F=
15°C
f-
-55°C
0
I.S
w
1.6
~
...
-
175°C
2.0
'"
«
1111
II
IIII
II
IC = 100 mA
1.0 A
III
!:; 1.4
> 1.1
l"l
-
'"w....
....
1.0
al
"'
O.S
.-
3.0 A
\
0
TJ=25 0C'--
0
~
8
30
10
0.6
0.4
~ 0.2
>
10
0.0010.01
TnI
TIT
0.010.03 0.05
0.1
0.1 0.3 0.5
1.0
1.0 3.0 5.07.0
0
0.5
~
1':
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300 500
Is. SASE CURRENT (mA)
IC. COLLECTOR CURRENT (AMPS)
FIGURE 10 - EFFECTS OF BASE-EMITTER
FIGURE 11 - ON VOLTAGES
RESISTANCE
IDS
1.0
-
O.S -
IC - 10 X ICES
6
5
=
......
........
IC-1X ICES
==
101
o
........
......
IC -ICES
-
_
0.7
!So
0.6
~
w
O. 5 -
'"
4
~
0.4
>
0.3
o
......
(Typical ICES Values
r-0btained From Fig. 12)
I 1111111
0.9
VCE-30V-
r-....
VaE(sal)@ Ic/la = 10
lJ-+-tl:l:!:tt:
Ja~ @I )C~ ~ 12~L
TJ = 15 0C
I
O.1
O. 1 -
o
20
40
60
SO
100
120
140
160
ISO
100
0.01
0.02
0.05
0.1
+li.0
/
'"'"=>
u
'"0
~
8
10-5
VCE -30 V
G
-
3>
<4.0
-
~
+3.0
-
....
ffi
t-TJ = 1750C
IC/la~~olllll
!\l
TJ = -!i5 0
+2.0
;;;
~ +1.0
:-
10-6
t--- 1000C
10-9
-0.4
-0.1
g;
IC = ICES
I
:
i....
FORWARO
i
0.2
0.4
1.0 3.0
5.0
10
0.6
O.S
. 1.0
VSE. BASE·EMITTER VOLTAGE (VOLTS)
2.0 . 3.0 5.0
Ilf
I
l
_U_
UOc
III
I
II.il
I
I
I ~~IB 10: V~EI(!I) I
w
!2 10-8 ~ REV~RSE
~250C
1.0
118~C fO~ VF~~I~
o
u
10-7
0.5
FIGURE 13 - TEMPERATURE COEFFICIENTS
FIGURE 12 - COLLECTOR CUT-OFF REGION!
~ 10-4
0.2
IC. COLLECTOR CURRENT (AMPS)
10-3
ill
i-'
VCE( ..!) @ ICIIS = 10
TJ. JUNCTION TEMPERATURE (OC)
'"....5
.;::::;
-1.0
:,..-
-2.0
-3.0
-4.0
-5.0
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
IC. COLLECTOR CURRENT (AMPSI
4-127
2N 5344
2N5345
(SILICON)
HIGH VOLTAGE POWER PNP SILICON TRANSISTORS
1 AMPERE
HIGH-VOLTAGE
designed for high-voltage switching and amplifier applications,
• High Voltage Ratings - VCEO = 250 and 300 Vdc
• Fast Switching Times - Typically Less Than,550 ns
Total @ VCC = 100 Vdc
•
PNP
POWER TRANSISTORS
250-300 VOLTS
40 WATTS
• High Current-Gain-Bandwidth Product fT = 60 MHz (Min) @ IC = 100 mAdc
• Packaged in the Compact, High-Efficiency TO-66 Case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
2N5344 2N5345
Unit
VCEO
250
300
Collector-Base Voltage
VCB
250
300
Emitter-Base Voltage
VEB
5,0
Vdc
Collector Current - Continuous
IC
LO
Adc
Base Current - Continuous
IB
0,5
Adc
Total Device Dissipation @TC = 25' C
Derate above 251;1C
PD
40
Watts
228
mW;oC
-65 to +200
'c
Operating and storage Junction
Temperature Range
TJ , T stg
Vdc
Vdc
-. u-'
P
c
1- 8 - -
4-------------~~--+
Tf- -
-,
K
E
SEATING PLANE
THERMAL CHARACTERISTICS
Characteristic
Max
Thermal ReSistance, Junction to Case
I
STYLE 1:
PIN 1. BASE
2. EMITTER
--F-CASE: COLLECTOR
4.38
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
50
45
in
40
..........
l-
~. 35
~
~ 30
i-...
........
........
;::
:: 25
ili
c
........
...........
" r--.....
20
ffi
~ 15
~ 10
r--......
"'-
5.0
0
0
20
40
60
80
100
120
140
"'- ~
160
TC. CASE TEMPERATURE IOC)
180
200
MILLIMETERS
DIM MIN MAX
B 11.94 12.70
C
6.35 8.64
D 0.71 0.86
E
1.27 1.91
F 24.33 24.43
G
4.83
5.33
H 2.41
2.67
J 14.48 14.99
K 9.14
P
L27
n 3.61 3.86
S
8.89
T
- 3.68
U
- 15.75
INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.02B 0.034
0.050 0.075
0.95g 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
- 0.050
0.142 0.152
0.350
- 0.145
0.620
-
All JEOEC Dimensions and a,nd Notes Apply.
Safe Area Curves Are Indicated By Figure 5.
CASE 80-02
TO·66
All Limits Are APp'lIcable And Must Be Observed
4-128
2N5344, 2N5345
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC ~ 10 mAdc, IB ~ 0)
5
(11
VCEO(sus)
2N5344
2N5345
Collector Cutoff Current
(V CE ~ 225 Vdc, V BE (off) ~ 1. 5 Vde)
2N5344
10, 12
(V CE ~ 270 V<\e, V BE (offi ~ 1. 5 Vde)
2N5345
250
300
-
-
100
ICEX
(V CE ~ 225 Vdc, V BE( ff) ~ 1. 5 Vde, T C ~ 150·C)
o
2N5344
(VCE ~ 270 Vdc, VBE ( ff) ~ 1. 5 Vde, TC ~ 150·C)
o
2N5345
Collector Cutoff Current
(VCB ~ Rated V CB ' IE ~ 0)
-
ICBO
-
lEBO
/lAdc
100
1.0
mAdc
1.0
mAdc
-
0.1
-
0.1
25
100
7.0
-
,
Emitter Cutoff Current
(VBE ~ 5.0 Vdc, IC ~ 0)
Vdc
•
mAde
ON CHARACTERISTICS
8
DC Current Gain 111
(IC ~ 500 mAdc, V CE ~ 5.0 Vdc)
(IC ~ 1. 0 Adc, V CE ~ 5.0 Vdc)
9, 11, 13
Collector-Emitter Saturation Voltage
(IC ~ 1. 0 Adc, IB ~ O. 2 Adc)
Vdc
VCE(sat)
-
3.0
VBE(sat)
-
1.5
60
200
11, 13
Base-Emitter Saturation Voltage
(IC ~ 1.0 Adc, IB ~ 0.2 Adc)
-
hFE
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC ~ 100 mAdc, V CE ~ 20 Vdc, f
Output Capacitance
(V CB ~ 10 Vdc, ~
~
~
10 MHz)
MHz
-
fT
7
Cob
-
td
-
100
ns
-
100
ns
600
ns
100
ns
0)
pF
SWITCHING CHARACTERISTICS
Delay Time
(V CC ~ 100 Vdc, VBE(off) ~ O. 85 Vdc,
2,3
Rise Time
IC ~ 500 mAde, IB1 ~ 50 mAdc)
2,3
tr
2,6
ts
2,6
tf
Storage Time (VCC
Fall Time
(I)
~
100 Vdc, IC
~
500 mAdc,
IBI ~ IB2 ~ 50 mAdc)
Pulse Test: Pulse Width", 3.00 /la, Duty Cycle", 2.0%.
FIGURE 2 -
I
SW'~ ';HING
VBB
+18.2 V
10V
1
~ __ -20V
5.0 I'F
INPUTPULSE
tr, tf:s:5.0ns
PU LSE WIDTH = 1.0 1"
DUTY CYCLE = 2.0%
TIME TEST CIRCUIT
200
FIGURE 3 - TURN-ON TIME
1000
700
VCC
-100 V
200
300
200
SCOPE
ICIIB = 10
TJ 25 DC
500
~
w
'"
;:
........
t,@VCC=100V
......
100
~
r- t:--......
t,@VCC-30V
~
70
50
70
td@VOB=0.B5V
30
20
II
10
0.05 0.07
0.1
0.2
0.3
IC. COLLECTOR CURRENT (AMP)
4-129
0.5
0.7
1.0
2N5344, 2N5345
FIGURE 4 - THERMAL RESPONSE
8JC(I) = r!l) 8JC
8JC = 4.3BoCIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II
TJ(pk) - TC = P(pk) BJC(I)
•
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
2.0
1.0
I.
3.0
5.0
10
20
3D
50
100
200 300
500
1000
TIME (m,)
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
1.0
0.7
0.5
Q,
:;;
5
f-
~
'":::>
'"
'"
"
0.3
\
"
0.2
"-
0.1
'\.
0
~ 0.07
There are two limitations on the power handling ability of a
100llS
transistor:
\
5.om~·Oms\
:j 0.05
"
sistor that must be observed for reliable operation; i.e., the tran·
sistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 5 is based on TJ(pk) = 200 o C; T C is variable depending on conditions. Pulse curves are valid for duty
cycles of 10% provided TJ(pk) ,; 2000 C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by secondary breakdown.
'\.
0.03 I-- TJ = 200°C
-SECONOARY BREAKOOWN LIMITATION
0.02 f-- PULSE OUTY CYCLE ";10%
2N5344 ~
~urves apply below
2N5345, rated VCEO.'
0.01
20
70
3D
40 50
100
200
H
"-
'\ :\
II
junction temperature and secondary breakdown.
Safe operating area curves indicate IC-VCE limits of the tran-
de
2
~
\
\
1\
I"
~
300
400
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE 6 - TURN·OFF TIME
FIGURE 7 - CAPACITANCES
1000
1000
700
300
200
r-
-.;:;:
.......
...... r---
......
]:
--
70
--
500
r-...
Cib
300
t--.
TJ = 25°C
~
I'--.
"r---.....
w
:;; 100
;::
TJ = 25°C
I~
500
200
r-
~~
,--!!@VCC= 100 V
I"-t--.
Cob
If@VCC=30V
50
,
3D
20
3D
IBI = IB2
Ic/lB = 10
1,=1,-1/8 If
20
10
10
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
Ie. COLLECTOR CURRENT (AMP)
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
VR• REVERSE VOLTAGE (VOLTS)
4-130
20 30
50
100
2N5344, 2N5345
TYPICAL DC CHARACTERISTICS
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE 8 - DC CURRENT GAIN
300
1.0
i- TJ = 175°C
-
200
z
100 r--
«
....'"z
l:!
a:
......c
:>
~
w
0.8
;'"
0
>
a:
w
30
O.B
t::
20
----
10
VCP 10 V
VCE = 1.0 V
1\
IC= lOrnA
~
0.4
~...
0.2
\
0
0
\
>
r--.
2.0 3.0 5.0
10
20 30
50
100
o
200 300 500 1000
0.1
0.2 0.3 0.5
1.0
108
~
a:
a:
,.~
~
"' "'
V~E-30~
....... r-...... ......
106
=
I--
w
......
"'
"'
~
"'
,.......
VSE@VCE
0.2
-
I
/
t:i +2.0
~
,g +1.5
I
~
f5
/
ffi
a:
a:
~
j
0
10-7
...c
=
r-,
REVERSE
~ 10-B
10-9
VCE=30V
== 1= 100 t _ ::;:: ICFS
=
I
VCE(sat)@ IcllB = 10
2.0 3.0 5.0
0.2
= -,
=FORWARO,/
0.2
50
200300 500 1000
+1.0
r- 1T~ 2-5150IClt~ W50d
I j 11111111
<:;
~ +0.5
1111 1111
'eVC for VCElsat)
2
w
~ -1.0
0.3
100
'APPLIES FOR Ic/IS:ohFE/2
~
-1.5
i
-2.0
0.4
0.5
O.B
0.7
VBE. SASE·EMITTER VOLTAGE (VOLTS)
-
eVB for VSElsa.)
II II
-2.5
0.1
20 30
:;:
1-
0.1
10
§ -0.5
f-+ 25°C
0.3
1.0 ~
FIGURE 13 - TEMPERATURE COEFFICIENTS
+2.5
_ 10-4
aa: 10-6
t-:
IC. COLLECTOR CURRENT (rnA)
FIGURE 12 - COLLECTOR CUT-OFF REGION
~
t:;:::::--
I I Ic/lS - 5.0. -r
1.0
10-3
;: 10-5
io"
I--IV~E~sat) @, Iclis = 5.0 to 10
TJ. JUNCTION TEMPERATURE (OC)
TJ = 175°C
"ON" VOLTAGES
1111111
"'
_
100
Z
102
~
50
1"
w
III
20 30
~I 0.4
.......
IC = ICES .......
10
TJrn
O.B
~
105
~ 104
.....
«
z
ffi 103
-
~
~
IC = 10 ICES
:l:
a:
O.B
r--
o
IC = 2.0 ICES
5.0
1 ~ , .'-
0::
107
2.0 3.0
FIGURE 11 -
FIGURE 10 ..... EFFECTS OF BASE-EMITTER RESISTANCE
e
1.0
IS. BASE CURRENT (rnA)
IC. COLLECTOR CURRENT (rnA)
~
500mA
1\.
'-'
3.0
- 1.0
~
1\
150 rnA
w
5.0
i
1\
TJ = 25°C
0
r-- _ -55°C
50
1111
~
~
25°C
1.0
2.0 3.0 5.0
1111
10
20 30
50
100
IC. COLLECTOR CURRENT (rnA)
4-131
200 300 500 1000
•
2N5346
thru
2N5349
7 AMPERE
MEDIUM·POWER NPN SILICON TRANSISTORS
POWER TRANSISTORS
NPN SILICON
· .. designed for switching andwide·band amplifier applications.
= 1.2 Vdc
• Low Coliector·Emitter Saturation Voltage - VCE(sat)
(Max) @ IC = 7.0 Adc
• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact, High Dissipation TO·59 Case
80-100 VOLTS
60 WATTS
• Isolated Collector Configuration
• Complementary to 2N6186 thru 2N6189
•
"MAXIMUM RATINGS
Symbol
2N5346
2N5347
2N534B
2N5349
VCEO
BO
100
Vdc
Coliector·Base Voltage
VCB
BO
100
Vdc
Emitter·Base Voltage
VEB
IC
6.0
Vdc
7.0
Adc
Base Current
IB
1.0
Adc
Total Devies Dissipatlon@TC= 2SoC
Derate above 250 C
Po
60
TJ, Tstg
343
-65 to +200
Watts
mWtDC
Svmbol
Max
BJC
2.91
Rating
Collector· Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction
Unit
STYlE 1:
PIN 1. EMITTER
2.8ASE
3. COLLECTOR
°c
Temperature Range
THERMAL CHARACTERISTICS
I
Characteristic
Thermal Resistance, Junction to Case
I
I
Unit
°CIW
*lndlcatBl JEOEC Registered Data.
DIM
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
60
i'!
~z
"" "-
50,
40
i'--.
.............
0
;::
::
~
30
'"
20
~
10
~
0
r--... .......
~
-.............. t-.....
0
20
40
60
BO·
lDO
120
140
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
8
C
""
160
TC. CASE TEMPERATURE ,oCI
SIt. A,.. Curves art indlclitld by F..... S. Allllm!ts.,.IPPI . . . . .nd must be ot.rved.
4-132
'"
180
10.77 11.10 0.424 0.437
8.13 11.89 0.320 0.468
E
2.29 3.81 0.090 0.150
G
4.70 5.46 0.185 0.215
H
1.98
0.078
J 10.16 11.56 0.400 0.455
K 14.48 19.38 0.570 0.7G3
2.29 2.79 0.090 0.110
L
6.35
N
0.250
P
4.14 4.80 0.163 0.189
Q
1.02 1.65 0.040 0.065
R
8.08 9.65 0.318 0.380
4.212 4.310 0.1658 0.1697
S
9.65 11.10 0.380 0.437
T
All JEDEC dimenSions and notes apply
Collector isolated from CIII.
200
CASE 160-03
TO·59
2N5346 thru 2N5349
-ELECTRICAL CHARACTERISTICS (Tc = 25°C, unless otherwise noted)
I
I
Characteristic
Fig. No.
Symbol
-
VCEO(sus)
Min
Max
80
100
-
-
100
100
-
10
10
Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (1)
(lC = 50 mAde, IB = 0)
-
Collector Cutoff Current
(VCE = 75 Vde. IB = 0)
(VCE = 90 Vdc, IB = 0)
= 75 Vde,
= 90 Vde,
= 75 Vde,
= 150°C)
= 90 Vdc,
= 150°C)
"Ade
-
12
"Ade
ICEX
2N5346,2N5347
2N5348. 2N5349
VEB(off) = 1.5 Vdc)
VEB(oll) = 1.5 Vdc)
VEBloff) = 1.5 Vde,
-
ICED
2N5346,2N5347
2N5348. 2N5349
Collector Cutoff Current
(VCE
(VCE
(VCE
TC
(VCE
TC
Vdc
2N5346,2N5347
2N5348, 2N5349
2N5346,2N5347
VEB(ofl) = 1.5 Vdc,
2N5348,2N5349
Collector Cutoff Current
NC8 = Rated VCB, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc,IC = 0)
.ICBO
-
1.0
-
1.0
-
10
-
100
mAdc
•
"Ade
"Ade
lEaD
ON CHARACTERISTICS (1)
8
DC Current Gain
(lC = 500 mAde, VCE = 2.0 Vde)
(lC = 2.0 Ade, VCE
= 2.0 Vde)
(lC = 5.0 Adc, V CE
= 2.0 Vdc)
hFE
2N5346, 2N5348
2N5347.2N5349
2N5346, 2N5348
2N5347,2N5349
2N5346,2N5348
2N534 7. 2N5349
Collector·Emitter Saturation Voltage
(lc = 2.0 Adc, IB = 0.2 Ade)
(lC = 7.0 Adc, IB = 0.7 Ade)
Base-Emitter Saturation Voltage
(lC = 2.0 Ade, la = 0'.2 Adc)
(lC = 7.0 Adc, IB = 0.7 Adc)
9,11,13
VCE(sat)
-
120
240
-
Vdc
-
0.7
1.2
-
11,13
-
-
30
60
30
60
20
40
Vde
VBEIsad
-
-
1.2
2.0
30
-
-
250
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 500 mAde, VeE = 10 Vde, 1= 10 MHz)
Output Capacitance
(VCB - 10 Vdc,IE = 0, f = 100 kHz)
Input Capacitance
(VaE = 2.0 Vdc, IC = 0, f = tOO kHz)
-
IT
7
Cob
7
MHz
pF
Cib
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fa" Time
=3.0 Vdc,
= 2.0 Adc, lal = 200 mAdc)
(VCC =40 Vdc, IC = 2.0 Adc,
lal = la2 = 200 mAde)
(VCC = 40 Vde, VEB(off)
2,3
Id
(lC
tr
2,6
pF
-
1,000
100
-
ts
ns
100
ns
2.0
/IS
ns
200
tf
"IndIcates JEDEC RegIStered Data. 11) Pulse Test: Pulse WIdth .. 300 /IS, Duty Cycle" 2.0%.
FIGURE 3 - TURN'()N TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
rL+
l-IO~$-l
INPUT PULSE
tr.lf c:l0 ns
D.C. = 1.0%
,".6 V
10
Vee
+40 V
5.0
37V
2.0
25 ~F
T
:i
w
82
0.5
1,@lVce=20V
::E
;:: 0.2
0.1
lN914
·2.3 V
0.05
0.02
-=
==
0.0 1
0.01
4-133
IcJI8 =10
TJ"250 C
Id @I VEBloH) • 6.0 V
"OIl
1.0
20
62
OV
tl~veei80~
........
,
........
f""IIo
Id@VEBloH) = 4.0 V
0.02
........
0.05
O.~
1.0
2.0
0.1
0.2
IC. COLLECTOR CURRENT lAMPS)
5.0
10
2N5346 thru 2N5349
FIGURE 4 - THERMAL RESPONSE
0
~-D'0.5
3
-0.2
2
-0.1
~ruL
'=0.05
1...
1
5- 0.02
t~
12
i>c
I- ~0.01
2~ SINGLE PULSE
I II I
0.0 I
0.01
•
.
0.02 0.03
SINGLE
PULSE
DUTY CYCLE. 0 =II1t2
0.05
0.1
III
0.2
0.3
0.5
1.0
2.0 .3.0
5.0
I. TIME (ms)
10
20
30
50
9JC(t) • r(tl9JC
9JC = 2.BI·CIW Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATII
TJ(pk) - TC =P(pk) 9JC(tI
1 11
100
200 300
500
1000
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
'O!~~1i1i~~iii!~~~'~Ii.~!~iI!i'iOOi~i'lil
~
a
2~·
0:
=
8
~
area curves indicate Ie -
1.0ms
5.0n
,0
.5
;-~
~"l.
There are two limitations on the power handling ability of a transistor: junction temper.
ture and secondary breakdown. Safe operating
• I-- -
- -
TJo200oc
SECONDARY BREAKDOWN LlMITEO+...,l'..!:'-Io."..Ht
_ _ de
- BONDING WIRE LIMITED
. I § - - - - - THERMALLYL1MITED
0.05
CURVES APPLY BELOW
0.02
RATED VCED
:5;s~~~~~~~~~L~~._
~~~~$II
t-
-r
VCE. COLLECTOR·EMITTER'VOLTAGE (VOLTS)
FIGURE 6 - TURN-OFF TIME'
FIGURE 7 - CAPACITANCE versus VOLTAGE
1u
1000
1.0
5.0
3.0
2.0
I,
I-
1.0
1 ~:s
1
II.VCC-BOV
o.3
.,., o.21-~
O. 1
0.01
0.05
0.03
0.02
0.01
0.01
VeE limits of the
transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 5 is based or, T Jlpk) =
200°C; TC is variable depending on conditions.
Pulse curves are valid for duty cycles of 10%
provided TJ(pk)<2OOoC. TJ(pk) may be calculated from th, data in Figure 4. At high ca..
temperatures. thermal limitations will reduce
the power that can be handled to values less
than the limitations imposed by secondary.
breakdown.
r-I,.VCc-20V
-
IBI = IB2
Ic/IB-IO
TJ-250 C
-
700
... 500
.e
~300
i
...
~
200
-
r-
TJ-*
Cib
r-
.........
100
r--
0
G.02
0.05
0.1
0.2
I.G
2.0
IC. COLLECTOR CURRENT (AMPS)
0.5
5.0
50
1.0
10
Cob
2.0
J.o
5.0 7.0
10
2G
3D
VR. REVERSE VOLTAGE (VOLTS)
4-134
50 70 100
2N5346 thru 2N5349
FIGURE 8 - DC CURRENT GAIN
1000
700
SOD
-
z 300
;;:
'"
200
r
100
~ I=- "'fsrc
r-
I-
~
'"
B
c'"
;
70
50
..
-
TJ -175°C
FIGURE 9 - COLLECTOR SATURATION REGION
~
VCE - 2.0 V
-VCE 10V
Q
~
w
'"
III
III
I.S
1.6
IC'100mA
'"
'"w
II-
1.0
'"'"
0.6
~
~8
30
20
0.020.03 0.05
0.1
0.2 0.3 O.S
1.0
2.0 3.0 5.0 7.0
1111
1111
III
III
1.0A
3.0 A
TJ'250C-
1\
O.S
0.4
~ 0.2
>
10
0.0070.01
I
I
!:; 1.4
Q
> 1.2
_55°C
"'-
2.0
0
0.5
-
i'
1.0
2.0 3.0
5.0
10
IC. COLLECTOR CURRENT lAMPS)
0.9
VCE'30 V -
O.S
IC'10 X ICES
6
r-....
==
o
0.7
~
o
0.6
~
20
40
60
......
O.5 -
~
0.4
......
Ja~ ~ vlc~ ~ 1z'.Jv
TJ-250C
O. 2
VCE(..,)@IC/la· 10
120
140
160
ISO
200
0.01
0.02 0.03 0.05
TJ.JUNCTION TEMPERATURE IDC)
0.1
'"
I-"
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
IC. COLLECTOR CURRENT (AMPS)
FIGURE 12 - COLLECTOR CUT-OFF REGION
FIGURE 13 - TEMPERATURE COEFFICIENTS
10-3
t5.0
VCE -3D V
'"
~ +4.0
-
~ +3.0 Iffi +2.0
TJ -175DC
I 1111111
100°C
8
w
g;
I
~REV~RSE
~
FORWARD
l-
i
t=:t: 25°C
-0.2
illl I
I kUa
-1.0
nI'
III
fO~ V~~~t)
'"
S
-2.0
ll!
IC' ICE
-0.4
II
i )8~C fO~ V~E(m )
$ +1.0
-
I
.J.
Ic /l a· l o'.!.ll .
I
TJ' -55°C to +1750C
<:;
10-9
~
II I 111111
.lJ.-.I..l-H±!:
0.3
O.1 100
200 300 500
I""
o
SO
100
II II IIII
- V~~I!tl ~ II~/~~ ~11O
~
'">
IC'ICES
102
_
IC-2 X ICES
ITypicallCES Values
Obtained From Fig, 12~
50
FIGURE 11 - "ON" VOLTAGES
1.0
IDS
-
20 30
la. BASE CURRENT (rnA)
FIGURE 10 - EFFECTS OF BASE EMITTER
RESISTANCE
=
.......
-3.0
-4.0
-5.0
0.2
0.4
0.6
0.8
0.01
1.0
VaE. BASE·EMITTERVOLTAGE IVOLTS)
0.020.03 0.05
0.1
0.2 0.3 0.5
1.0
IC. COLLECTOR CURRENT (AMPS)
4-135
2.0 3.0 5.0
10
•
2N5427
thru
2N5430
7 AMPERE
MEDIUM·POWER NPN SILICON TRANSISTORS
POWER TRANSISTORS
NPN SILICON
· .. designed for switching and wide· band amplifier applications.
Low Coliector·Emitter Saturation Voltage VCE(sat) =1.2 Vdc (Max) @ IC =7.0 Adc
• DC Current Gain Specified to 7 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact TO·66 Case
•
•
80-100 VOLTS
40 WATTS
*MAXIMUM RATINGS
Rating
2N5427
2N5428
80
BO
Symbol
Collector-Emitter Voltage,
VCEO
VCB
VEB
IC
Coliector·Base Voltage
I:mitter·S ..e Voltage
Collector Current Continuous
B..e Current
Total Device Dissipatlon@Tc= 25u C
Derate above 25°C
Operating and Storage Junction
Temperature Range
2N5429
2N5430
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mWfOC
°c
6.0
7.0
1.0
40
228
-65 to +200
'B
PD
TJ. Tstg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
8JC
I
I
I
Max
4.37
---F--
Unit
10C/W
• Indicates JEDEC Registered Data
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
STYLE 1:
5
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
0
0
........
r-.....
B
C
...... .........
........
0
..........
0
0
20
40
MILLIMETERS
MIN MAX
11.94 12.70
6.35 8.64
0
0.11 0.B6
E
1.21 1.91
F 24.33 24.43
G 4.B3 5.33
2.41 2.61
H
J 14.48 14.99
K 9.14
P
1.21
D 3.61
3.88
S
8.89
T
3.88
U
16.75
DIM
..........
60
80
100
120
r--....
140
r.........
160
TC. CASE TEMPERATURE caC)
r--.........
180
200
-
INCHES
MIN MAX
0.410 0.500
0.250 0.34D
0.028 0.034
0.050 0.015
0.958 0.962
0.190 0.210
0.095 0.105
0.510 0.590
0.360
0.060
0.1
0.1 2
0.350
0.145
-
All JEOEC 01.......... Ind Nalll~.
CASE IICJ.02
T0-66
4-136
2N5427 thru 2N5430
*ELECTRICAL CHARACTERISTICS ITC = 25 0 C, unless otherwise notedl
I
I
Characteristic
Fig. No.
Symbol
-
BVCEO(susl·
Min
Max
Unit
OFF CHARACTERISTICS
Colleetor·Emitter Sustaining Voltage (11
(lC = 50 mAde, IB = 01
2N5427, 2N5428
2N5429, 2N5430
80
100
Collector Cutoff Current
(VCE
(VCE
= 75 Vde, lB' = 01
=90 Vde, IB = 01
VEB(offl
VE8(offl
VEB(offl
VEB(offl
= 1.5 Vdel
= 1.5 Vdel
= 1.5 Vde,
ICE a
12
ICEX
(VCB
I'Ade
100
100
2N5427,2N5428
2N5429, 2N5430
-
10
10
2N5427, 2N5428
-
1.0
-
1.0
-
10
-
100
30
60
30
60
20
40
120
240
-
0.7
1.2
-
1.2
2.0
30
-
-
250
I'Ade
= 1.5 Vde,
2N5429, 2N5430
Collector Cutoff Current
-
Emitter Cutoff Current
(VBE = 6.0 Vde, IC = 01
mAde
•
I'Ade
ICBO
= Rated VCB, IE = 01
Vde
-
-
2N5427,2N5428
2N5429,2N543Q
Collector Cutoff Current
(VCE = 75 Vde,
(VCE = 90 Vde,
(VCE = 75 Vde,
TC = 1500 CI
(VCE = 90 Vde,
TC = 1500 CI
-
-
I'Ade
lEBO
ON CHARACTERISTICS (1)
8
DC Current Gain
(lC
= 500 mAde, VCE = 2.0 Vdel
(lC
= 2.0 Ade, VCE = 2.0 Vdel
IIC = 5.0 Ade, VCE
-
hFE·
2N5427, 2N5429
2N5428,2N5430
2N5427, 2N5429
2N5428, 2N5430
2N5427, 2N5429
2N5428,2N5430
= 2.0 Vdel
Coliector·Emitter Saturation Voltage
(lC = 2.0 Ade, IB = 0.2 Adel
(lC = 7.0 Ade, IB = 0.7 Adel
9,11,13
(lC = 2.0 Ade, IB = 0.2 Adel
(lC = 7.0 Ade, IB = 0.7 Adcl
-
Vde
VCE(satl·
11,13
Base-Emitter Saturation Voltage
-
Vde
VBE(sat)·
"
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 500 mAde, VCE = 10 Vde, I
= 10 MHzl
Output Capacitance
(VCB
IT
7
Cob
= 10 Vde,IE = 0, I = HID kHzl
Input Capacitance
(VBE
7
pF
pF
Cib
= 2.0 Vde, IC =0, I = 100 kHzl
MHz
-
1,000 .
SWITCHING CHARACTERISTICS
Delav Time
Rise Time
Storage Time
Fall Time
(VCC =40 Vdc, VE8(offl = 3.0 Vde,
(lC =2.0 Ade, IBl = 200 mAdel
(VCC = 40 Vde, IC =2.0 Ade,
IBl = IB2 = 200 mAdel
2,3
-
td
tr
t,
-tf
2,6
-
-
100
100
2.0
200
ns
ns
I'S
ns
"Ind,eates JEDEC RegIStered Data. (1 )Pulse Test: Pulse Width '" 3001'5, Duty Cycle'" 2.0%.
FIGURE 3 - TURN'()N TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
-11.6 V
Ii--- +31V
~
Lov
!-101lS-!
INPUTPUlSE
tr.
t,
~10ns
D.C." 1.0%
62
10
VCC
+40 V
5.0
1.0
251'F
T
82
tr~Vcei80lv
2.0 ""Iloo..
20
]
0.5
'"~
0.2
w
I....
tr@VCC=20V
0.1
lN914
le/ls'10
TJ=250e
td@VEB(oHI"6.0V
"
,..."
0.05
td Gil VEBloH) • 4.0 V
0.02
-3.3 V
0.0 1
0.01
4-137
0.02
0.05
0.2
0.5. 1.0
2.0
0.1
IC, COllECTOR CURRENT (AMPSI
5.0
10
2N5427 thru 2N5430
FIGURE 4 - THERMAL RESPONSE
.~
0;
z
=
""
U.I
.... u
1.0
0.7
0.5
O' 0.5
o. 3
0.2
wz
~~
w
u
:5
There are two limitations on the power han-
"
5.0 ms
dling abilityof a transistor: junctiontemperature
t:--
t-~
" f - t"i~
1.
f= TJ - 200 0 C
O. 5
Secondary Breakdown Limited
~ - - - - -Bonding Wire limited
/-o.2 - - - - Thermal Limitations
TC = 250 C
'Pulse Duty Cycle::::: 10%
1
Applicable For Rated BVCEO
f=
po.
~_ 0.0o.
and secondary breakdown. Safe operating area
curves Indicate IC-VCE limits of the transistor
thet must be observed for reliable operation;
i.e., the transistor must not be subjected to
greater dissipation than the curves indlcat•.
The data of Figure 5 is based on TJ(pk) =
2000C; TC is variable depending on conditions.
Pulse curvesar. valid for duty cvclesof 10% providedTJ(pk) ,; 2000C. TJ(pk) may be calculated
from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can b. handled to values I.ss than
the limitations imposed bV secondary break·
down.
lOOps
tOms
"i"
de
5
2N5427.28
2N5429.30
0.02
0.0 1
1.0
2.0
3.0
5.0 7.0
20
10
30
50
70 100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI
FIGURE 6 - TURN.oFF TIME
10
7.0
5.0
3.0
2. 0
lSI =IS2
IclIs= 10
TJ =250 C
I,
t-
~
j::
.:
~:75
o.3
D.2
O. 1
0.07
0.05
0.03
0.02
700
~
oS
......
1.0
j
FIGURE 7 - CAPACITANCE versus VOLTAGE
1000
TJ=250 CCib
w
~ 3110
tf PVCC=80V
~
~
r-- I-tffl!l VCC= 20 V
~
200
I'"
oS
i""- ...... 1'--0
100
0
0.0 1
0.01
~
5110
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMPS)
50
1.0
Cpb
2.0
3.0
5.0 7.0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
4-138
50 10 100
2N5427 thru 2N5430
FIGURE 8 - DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
g 2.0
o
0
0.5
1.0
2.0 3.0
5.0
FIGURE 10 - EFFECTS OF BASE-EMITTER
RESISTANCE
O. 9
0.8 I-
IC -10 X ICES
_
-- - -
.......
~
o
-
0.3
o
---
(Typical ICES Values
Obtained From Fig. 121
::::::::::
I
I
40
6IJ
80
100
v' E'( I )~ ',',) I ~IIO
B Ii'
Ii
I I ~ II
120
140
I6IJ
180
200
0.01
TJ = 25°C
IC
VCE("')@iB=IO
0.02
0.05
~
VCe-30V -
~
Iffi
10-4
TJ-1750C
~ 10-5
t4.0
+3.0 ' +2.0
I IIIIIII
Ic/lB'I~III
$ +1.0
~
'w"'
g;
1000C
ut",1
~
!} 1~ [:!::.. REVERSE
I~
-0.4
~
~
FORWARO
l-
i
25°C
-0.2
0.2
0.4
0.5
1.0
2.0 3.0 5.0
10
0.6
VBE. BASE·EMITTER VOLTAGE (VOLTS)
0.8
/
0,
I
'~8 f;Vit~,) J
-1.0
I-"
-2.0
.-
-3.0
-4.0
-5.0
0.01
1.0
I
.1.1
I~JlflJ
I ~C
F~(f~
o
:;;,~
r-
0.2
TJ = -550C '0 +1750C
'IlL I I
U
'"=>
j
8
0.1
FIGURE 13 - TEMPERATURE COEFFICIENTS
+5.0
S
I-"
..-
IC. COLLECTOR CURRENT (AMPS)
FIGURE 12 - COLLECTOR CUT'()FF REGION
I-
~
l.J-.!.+±:I:I:!
J8~ ~ v'c~ U~.~ V
TJ. JUNCTION TEMPERATURE (OC)
~
200 300 500
111111
o
20
100
O.2
O. I I -
102
o
50
I.0
VCE -30N-
......
20 30
FIGURE 11 - "ON" VOLTAGES
._.
......
10
lB. BASE CURRENT (rnA)
IC. COLLECTOR CURRENT (AMPS)
108
.......
r-
......
0.02 0.03 0.05
~.I
0.2 0.3 0.5
1.0
IC. COLLECTOR CURRENT (AMPS)
4-139
2.0 3.0 5.0
10
•
2N5629,2N5630,,2N5631
2N6029,2N6030 J 2N6031
NPN
PNP
HIGH·VOLTAGE - HIGH POWER TRANSISTORS
16 AMPERE
· •. designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
•
•
•
POWER TRANSISTORS
COMPLEMENTARY SILICON
High Coliector·Emitter Sustaining Voltage VCEO(sus) = 100 Vdc - 2N5629. 2N6029
= 120 Vdc - 2N5630. 2N6030
= 140 Vdc - 2N5631. 2N6031
100-120-140 VOLTS
200 WATTS
High DC Current Gain - @ IC = 8.0 Adc
hFE - 25 (Min) - 2N5629 2N6029
= 20 (Min) - 2N5630. 2N6030
= 15 (Min) - 2N5631. 2N6031
-
•
Low Collector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
~
-MAXIMUM RATINGS
Rating
Symbol
Collector-E mltter Voltage
Collector-Base Voltage
Emitter-Base Voltage
2N5629 2N5630
2N6029 2N6030
2N5631
2N6031
Unit
VCEO
100
120
140
Vdc
VCB
100
120
140
Vdc
VEB
-7.0_
Vdc
IC
-16-20-
Adc
Base Current _. Continuous
18
-5.0-
Adc
Total Device Dissipation @ T C - 2SoC
Po
-200-
_1.14_
Watts
W/oC
·6510 +200
°c
Collector Current - Continuous
Peak
Derate above 25°C
Operating and Storage Junction
Temperature Range
T J. TSI9
lr~
~"
j
E SEATING
PLANE
I--F-
t--J-
,
-THERMAL CHARACTERISTICS
Characteristic
Symbol
Ma.
Unit
"JC
0.875
°C/W
Thermal Resistance. Junction to Case
OIA~
V
."
Z
~.- ~
10
-Indicates JE DEC Registered Data.
~
f
L
~
1L'
11
~1
FIGURE 1 - POWER DERATING
200
e
!z
........ i'..
150
"I'-..
0
;::
::
ill
STYLE I:
PIN 1. BASE
2•. EMITTER
CASE: COLLECTOR
"-
100
DIM
'r---...
A
B
C
0
E
~
C
'"
~
~
f 5D
~
F
""- ~
0
0
20
40
100 120
60
80
TC. TEMPERATURE (OCI
140
160
180 200
Safe Area Curves ara indicated bV Figure 5 All Limits are applicable and must be observed.
4-140
MILLIMETERS
MIN MAX
-
-
6.35
0.99
29.90
G 10.67
H 5.33
j
16.84
K 11.18
Q
3.84
R
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67
NOTE:
1. DIM "n"ls OIA.
INCHES
MIN
MAX
-
O. 0
0.039
-
1.177
0.420
0.210
0.655
0.440
0.151
-
Collector connected to CIIII.
CASE 11-01
(TO-31
1.550
0.830
0.300
0.043
0.135
1.197
o.~_
0.220
0.675
0.480
0.161
1.050
2N5629, 2N5630, 2N5631 NPN
2N6029, 2N6030, 2N6031 PNP
-ELECTRICAL CHARACTERISTICS
(Te = 25 0 e unless otherwise noted)
Characteristic
Symbol
Min
Max
100
120
140
-
-
'1.0
1.0
1.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
VCEOlsus)
2N5629.2N6029
2N5630, 2N6030
2N5631, 2N6031
IIc = 200 mAde. 16 = 0)
Collector-Emitter Cutoff Current
mAde
ICED
2N5629, 2N6029
2N5630,2N6030
2N5631,2N6031
IVCE = 50 Vde, IB = 0)
IVCE = 60 Vde,IB = 0)
IVCE = 70 Vde,IB = 0)
-
Collector-Emitter Cutoff Current
ICEX
ICBO
-
lEBO
IVCE = Rated VCB, VEBloll) = 1.5 Vdc)
IVCE = Rated VCB. VEBlolt) = 1.5 Vdc, Tc = 150°C)
Collector-Base Cutoff Current
IVCB = Rated VCB, IE = 0)
Emitter-Base Cutoff Current
Vde
IVBE = 7.0 Vdc, IC = 0)
mAde
1.0
5.0
1.0
mAde
-
1.0
mAde
25
20
15
4.0
100
80
60
•
ON CHARACTERISTICS 11)
DC Current Gain
IIC = 8.0 Adc, VCE
IIc = 16 Ade, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage
IIc = 10 Adc, IB = 1.0 Adc)
IIc = 16 Adc, IB
-
hFE
2N5629,2N6029
2N5630,2N6030
2N5631, 2N6031
All Types
= 2.0 Vdc)
VCEI.at)
VBElsa')
-
VSElon)
'T
All Types
= 4.0 Ade)
Base-Emitter Saturation Voltage
IIc = 10 Adc, IB = 1.0 Adc)
Base-Emitter On Voltage
IIC = 8.0 Adc, VCE = 2.0 Vde)
-
Vdc
1.0
2.0
1.S
Vdc
-
1.5
Vde
1.0
-
MHz
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
IIC = 1.0 Adc, VCE = 20 Vde, I test = 0.5 MHz)
Output Capacitance
IVCB = 10 Vdc, IE
=0, 1= 0.1
2N5629, 30, 31
2N6029, 30, 31
MHz)
Small-Signal Current Gain
IIC = 4.0 Adc, VCE = 10 Vdc, I = 1.0 kHz)
Cob
-
hIe
15
500
1000
pF
-
-
r
Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width :S;;;;300 ,",S, Dutv Cycle ~2.0%.
(2) fT = Ihf.1 • f te • t
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
3.0
VCC
+30 V
I I
2.0
TJ·250C
ICIIB ·10
VCE· 30 V
I
1.0
SCOPE
RB
O. 1
-; O.5
.=.
~
51
I,
o.3
tr. t,::::10 ns
r-
Id --0.1
--
•
ill
0.05
0.1
~t2--1
,
0.2
I-
1.0
0.5
2.0
,
"'
5.0
10
I, TIME 1m,}
o CURVES APPLY FOR POWE~_
PULSE TRAIN SHOWN
READ TIME AT II
-~
f-TJlpk}- TC - Plpk} ~JCltI- I-
SINGLE
PULSE
11+---1
0.01
~IINGLE{UISE
0.0 1
0.02
t-
CYCLE. 0 -11112
p~nn
0.02
......-
2
~UTY
I- ~ :::::;::;
_d.os
;;;::;;;; F
5
~JC-OB75'C'WMaxlll~_
~Iiiii'
0.2
.1
-QJCII}- rldQJC
" "'11
50
20
100
200
500
1000
2000
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
0
i
- -
-
l
,I
0
~
"'\I.
5,0';''}
1"'-1 r
l.O~Sm
I II
,,-50
0.5 ms
There are two limitations on the power handling ability of a
P'
d,
'" 7.0
transistor: average junction temperature, and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
0
5.
TJ-200'C
""'"
3. oI----SECONO BREAKOOWN L1M,ITE~~~
01----OONOINGWIRE
LIMITED
~ 2.
I-- - - - -THERMALl Y LlMITEO@TC- 25'C
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid
_
'"o
~EO.::
, ! , , "'
1
oI==I=CURVES APPLY SELOW
71--15
I II
3.0
I .',
for duty cycles to 10% provided TJ(pk)';; 200°C. TJlpk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
RATED VCEO
o. 3
O. 2
2.0
i
2NSS29,2NS029
2N5S30,2NS030
2NSS31,2NSOll
~
5.0 7.0 10
20
30
SO 70 100
VeE, COLLECTOR·EMITTER VOLTAGE IVOLTS}
200
NPN
2N5629. 2N5630. 2N5631
PNP
2N6029. 2N6030. 2N6031
I
FIGURE 6 - TURN·OFF TIME
5.
Or-I-.
~
3,0
+-+--
...... Is
'" 1'"
0
4.0
TJ-25'C
ICIIS-IO' 101 -IS2
VCE-30V-
-..
3.0
2.0
.III
L
Tj"2SoC _
t.....
1.1-
i'..
:!
~
;::
V
r"-",
1.0
......
0,S
1'-
1.0
0,7
O. S
0.2
r0.3
o.4
If
....... t--
O. 3
0.5
0.7 1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT lAMP)
7,0
10
0, 2
0.2
20
4-142
0.3
101 -IS2
Ic/IO-1O V E-30V-
tf
5,0 7,0
0.5 0.7 1,0'
2.0 3.0
IC, COLLECTOR CURRENT lAMP)
V
10
20
2N5629, 2N5630, 2N5631 NPN
2N6029,2N6030,2N6031 PNP
NPN
PNP
I
2N5629, 2N5630, 2N5631
2N6029, 2N6030, 2N6031
FIGURE 7 - CAPACITANCE
11111
1000
70
2000 r-r-r-T.,..,..,-rr------r---r-r-~~rT"1""IITTTT"~
t 1~1215~~
......
Or-
TJ ~ 25°C
r-..... 1
r----..: ~b
0
f"--r-.
~ 100 0
w
"z
70 0
'"
I
>U
0
::
!'....
0
;") 50 0
u
Cob
r-..,
,
....... Cob
300
10 0
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOL TS)
50
100
Ir
I
200
0.2
200
"'1-.1
1
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
100
50
200
FIGURE 8 - DC CURRENT GAIN
500
300
200
500
I-- TJ ~ 150°C
-
:-- t- ~I·
I--
I- ~
VCE~2.0V
I-
30
- - - - VCE ~ 10 V I--
20 0
;;0
"c
~
20
"
~ ~-
"
B5
"'~
30
~
);:0.
30
~
~
0
~
10
7.0
5.0
0.2
-
~ Hl 0i==-55 0 C
~ 70
0
"'
a'"'"
-
I=~OC
z
f-_ r:;~,
~ 100 ~-55°C
....z 70 I-- I-w
50
VCE ~ 2.0 V- I-- VCE ~ 10 V - I-
ot--TJ=+150
_ oC
"
0
0.3
0.5
0.7 1.0
2.0 3.0
5.0
IC. COLLECTOR CURRENT (AMP)
10
7.0
5.0
0.2
20
0.3
20 3.0
5.0 7.0
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
10
20
FIGURE 9 - COLLECTOR SATURATION REGION
0;
20
~
~
~
~
ffi
1.6
I
I
III
III
Icl.lt
t--
8 101
.0
II
II
It
TJ ~ 25°C
1. 6
.
1.2
~ o.8
o.8
8~ 0.4
~
>
l'-
.4
~
\
TJ ~ 25 0 C
116~
I.....
t-
I'
I\..
I"0
0.05 0.07
0
0.05 0.07 0.1
\
1\
1\
::
1\
~.o 1
I'
1. 2
,.
II III
,d ~)4.h)A
0.2
0.3
0.5 0.7 1.0
18. 8ASE CURRENT lAMP)
2.0
3.0
5.0
4-143
0.1
0.2
0.3
0.5 0.7 1.0
lB. BASE CURRENT lAMP)
2.0
3.0
5.0
•
2N5629,2N5630,2N5631 NPN
2N6029, 2N6030, 2N6031 PNP
I
NP,,",
2N5629,2N5630,2N5631
PNP
2N6029, 2N6030, 2N6031
FIGURE 10 - ON VOLTAGES
2. 0
2.0
HJjo~
II
6
~oo~
~
/
1.2
~
2:
O.S
'"
~
I-
c5
J.
1.2
O. 4
00
./
~BE i VfE I· t~ ~ I
:>
•
1;:::=:::-
VIBEI"')@ ICIIB· 10
>
>
>'
VBEI",)@ICIIB·IO
OB
O. 4
0.3
0.2
20
2.0 3.0
5.0 7.0 10
0.5 0.7 1.0
IC. COLLECTOR CURRENT lAMP)
-
~IVCUtlIJI~t 10
o
0.2
/
VBE@VCE-2.0V
JCEIL) llUB 1.11&
o
://
I
/
-
w
w
'"'"
t.!50~
I. 6
0.3
i-'
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC. COLLECTOR CURRENT lAMP)
10
20
FIGURE 11 - TEMPERATURE COEFFICIENTS
I[ +4.0 rt---'A"'P-PI-iesrf'orrIC"','IB,
0.1
'"'
'"'"'
I
0.3
~
........
I
0.2
25'C
VCE· 2.0 V
......
to
'"
10
t::::Tj.l~'C
;;:
-55'C
0
II
=
z
25°C
100
20 0
I
200
i1'l
~
Tj·15O'C
~
100
8or- r-
-550 C
0
........
40
......
~
0
0.5
1.0
2.0
3.0
5.0
20
0.1
10
lC. COLLECTOR CURRENT (AMP)
f',
0.2
0.3
0.5
1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMP)
4-149
5.0
10
2N5632,2N5633,2N5634
2N6229,2N6230,2N6231
NPN
PNP
NPN
2N5632,2N5633,2N5634
PNP
2N6229,2N6230,2N6231
I
FIGURE 9 - COLLECTOR SATURATION REGION
i
~
2.0 f-
Ilc~U~1-
_
~.
1.61-+H+l-l+H---Ht--I+l-l+H--+-t-t--I+lff+H----l
~
ffi
o
1.21-+H+l-l+H---HIt--t+lH+H---t-t-t--I+lH+H----l
~
11:
.c
o.al-++l+1...wft--HH+lrttft-++--H+I-l'I:ft--l
8
\
0.4
2.0A
~
1. 2
.c
0.8
_
0.4
~
r--
t-tttttttt--:t-tyHittt--'F:;;j;:t:t:ttI:lJi
lOA
5.0 A
,
::
\
-
,
~
8
O.~~~~~~~~~~~
2.0
5.0
10
20
50
100 200
500 1000 2000
II
1
II
I - 0.5 A
~ .1. 6
~
~
ITJ-250C
o
o
~
2.0
~
112.JAI
~
r-
0
2.0
.>
5.0
10
20
la. aASE CURRENT (rnA)
50
100
500
200
1000 2000
la. aASE CURRENT (rnA)
FIGURE 10 - "ON" VOLTAGES
1.4
1.4
I
1.H-- I- TJ - 250C
~
2
V
1.0
VaE(",)@' lelia - 10
o. a
o
>~
>
_
.......
~
w
~
VfE(j'),@ 1'~"la,-1O
O.2
VBE(sa!)@lclla- 10
o.a
~I""'"
VBE@VCE - 2.0 V
J.l ..1
:> 0.4
V
l - I--'"
VCE(,,!)@ICIIB - ~
O.2
II
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
L.
0.6
~
L I III
o.4
1.0
~
o
v~Ulv
o.G
0
0.1
I--'"
..J:.-H-t:I:I:.
w
'"~
t-- TJ - 250C
I
1.2
0.2
0.1
0.3
lC. COLLECTOR CURRENT (AMP)
0.5
~
I""'"
I
J.l
2.0
1.0
3.0
5.0
10
IC. COLLECTOR CURRENT (AMP)
FIGURE 11 - TEMPERATURE COEFFICIENTS
2.5
~
2.0
.§
1.5
>
~
ffi
"A~plie~fo~ "lis. ~h~EI2
Iii
1.0
0.5
-0.5
~
}V~ J.! VBE
-1.0
+'250 Cto
~
-1.5
-2.0
, -2.5
0.1
i j'
~
i:5
...... ~
IIII
w
i
>
<3
~
-550C to +250C
~t5~OC
0.5
1.0
2.0
3.0
5.0
o. 5
~
"eVC for VCE(,,')
~-l.0
V
~~ -I--"
+~50b ,~ +15~od
1\
8
w
g; -0.5 - I-Ufo~VaE
-550C 10 +25 0C
TJ-+25 0CI0 150 0C
=_i"'"
~-1. 5
....
~ -2. 5
0.1
10
IC. COLLECTOR CURRENT (AMP)
11 "..
~1
1_55!C 10 +250C
1 lll..ll
>-2. 0
I
0.3
TJ -
1. 0
0
i 550?'o,+2,5O f
0.2
'APPLIES FOR
2.0 ICII~ < hFEI2
E 1. 5
TJ = +250 Cto +TSOnC
8
~
~
.~JJ for V~E( ..lt)
<3
ffi
2. 5
II
II
0.2
0.3
0.5
1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMP)
4-150
5.0
10
2N5632,2N5633,2N5634 NPN
2N6229,2N6230,2N6231 PNP
NPN
2N5632.2N5633.2N5634
PNP
2N6229. 2N6230. 2N6231
FIGURE 12. - COLLECTOR CUTOFF REGION
104
1000
r-VCE 'SOV
10 3
~
....
102
11-- TJ -ISO'C
10
100'e- -I2S'C-
r--
~
~
~
10
100
10. 1 f--
10- 2
-0.4
G
:5
~8
0
8
100
....
!
'"
~
.3,
REVERSE
-0.2
-0.1
+0.1
+0.2
+0.3
+[J.4
=TJ' 150'C
-
-lOo'e
Ie • ICES
o. 1
Vee-SOV-
FORWARD
25"C
0.0 I
=:REVERSE
0.00 1~
'0.4 +0.3 +0.2 +0.1
IC ·ICES
-0.3
1.0
=
+0.5
iO.6
VBE. BASE·EMITTER VOLTAGE IVOLTS)'
FDRWARDF
-0.1
-0.2
-0.3
-0.4
-0.5 -0.6
VBE. BASE·EMITTER VOLTAGE IVOLTS)
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
10 7
106
'"
~
VCP50V
""
r-.... ,......
:iii)
w::
"''''
~~
-,0
.......
~
~
'"
" "'-
.....
......
I,
S.leES
105
«z
z« 104
....ffi~
x'"
w'"
-
.......
Ie 'ICES
103 (TYPICAL:ICES:VALUES
OBTAINfD FrOM IFIG~RE
40
60
.....
.......
2.ICES
I"-.
.......
..........
-
y)
80
==
100
120
140
10 2
20
160
TJ.JUNeTiON TEMPERATURE 10C)
.......
.......
~lOlfES
IC~~
(TYPICAL ICES VALUES
OBTAmED FROM
FIGURE 12)
_
IC~ICES~
40
60
80
100
120
TJ. JUNCTION TEMPERATURE lOCI
4-151
-,.....
-......
140
160
•
2N,56'S'S, ,2N5656, 2N5657
(SILICON)
PLASTIC NPN SILICON HIGH-VOLTAGE
POWER TRANSISTOR
0.5 AMPERE
, , . designed for use in line·operated equipment such as audio output
amplifiers; low·current, high-voltage converters; and AC line relays
POWER TRANSISTORS
NPN SILICON
• Excellent DC Current Gain - hFE = 30-250 @ IC = 100 mAdc
• Current-Gain - Bandwidth Product 1,- = 10 MHz (Min) @ IC = 50 mAdc
250-300-350 VOLTS
20 WATTS
• Packaged in Thermopad Case for Low Cost
•
*MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
2N5655 2N5656
250
VCEO
Coliector·Base Voltage
VCB
Emitter-Base Voltage
Collector Current - Continuous
VEB
IC
Peak
Base Current
IB
'Total Power Dissipation@Tc=250 C
Derate above 250 C
Po
Operating and Storage Junction
Temperature Range
12N5657
Unit
350
Vdc
275
375
325
_6.0 ___
Vdc
-0.5'-----'.0 _
_
0,25 _ _ _
Adc
20
Watts
wf'c
300
OJli
-65 to +150
TJ, T stg
Vdc
Adc
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
6.25
·'ndicatesJEDEC Registered Data
~H
K
I--D
L--lLJ
FIGURE 1 - POWER DERATING
40
~
t-
~
S
G1J
30
z
0
~
ill
20
c
~rl-t
M~
. . . r-r-- r-....
0:
~
0
10
,po
0
2Ii
-
r-.....
"-
75
IG
r-..... ......
1l1li
1~
llG
TC. CASE TEMPERATURE C·CI
FIGURE 2 - SUSTAINING VOLTAGE TEST CIRCUIT
10m'
;dIT
J
y
UV
,~
..
y
-
... '1'
"
MILLIMETERS
INCHES
DIM MIN MAX
MIN MAX
A 10.80 11.05 0.42
0.435
B 7.49 7.75
I 0.305
2.41 ,2.67
C
I 0,105
0,66
D
0.51
I 0.026
F
2.92
3,lB
I 0.125
2,46
G
2.31
1 0.097
2,41
H
1.27
1 0.095
0.64
J
0.38
I 0,025
K 15.11 16.64
~
M
3 TYP
n 3.76 4.01
1 0. 158
1,14
1,40
R
1 0.055
S
0.64
0.89
1 0.035
U
3.68 3.94
I 0.~5
V
1.02
'---
rh.-
,x
TDSCOPE
STYLE 1
PIN 1. EMITTER
2. COLLECTO R
3. BASE
.
IOVT
CAsen.o4
TO-12S
Y
u
Sat. Area Limits .... Indlcat.d by FI ....... 30nd 4. Both limits.,. oppll_l••nd muot be Db..". .
4-152
2N5655,2N5656,2N5657
"ELECTRICAL CHARACTERISTICS (TC
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
250
300
350
-
250
300
350
-
-
0.1
-
0,1
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
lie = 100 mAde (inductive), L ::: 50 mHI
Vde
VCEOlsusl
2N5655
2N5656
2N5657
Collector-Emitter Breakdown Voltage
Vde
BVCEO
(lC' 1.0 mAde, la • 0)
2N5655
2N5656
2N5657
Collector Cutoff Current
ICED
IVCE' 150 Vde, IB • 0)
2N5655
IVCE' 200 Vde, IB • 0)
2N5656
IVCE' 250 Vde, IB • 0)
2N5657
Collector Cutoff Current
ICEX
mAde
0.1
mAde
IVCE' 250 Vde, VEBloll) • 1,5 Vde)
2N5655
-
0.1
IVCE • 300 Vde, VEBloff) • 1.5 Vde)
2N5656
-
0.1
0.1
IVCE • 350 Vde, VEBloffi' 1.5 Vde)
2N5657
IVCE' 150 Vde, VEBloffl' 1.5 Vde, TC '100"CI
IVCE • 200 Vde, VEBloll1 • 1.5 Vde, TC ·100 o CI
2N5655
2N5656
-
IVCE' 250 Vde, VEBloff) • 1.5 Vde, TC' l00 0 CI
2N5657
-
1.0
-
10
10
Collector Cutoff Current
ICBO
IVCB • 275 Vde, IE • 01
2N5655
IVCB = 325 Vde, IE = 01
2N5656
-
IVCB' 375 Vde, IE • 01
2N5657
-
Emitter Cutoff Current
1.0
1.0
j.lAdc
10
10
lEBO
IVEB = 6.0 Vde, IC • 01
"Adc
ON CHARACTERISTICS
DC Current Gain (1)
(lC = 50 mAde, VCE • 10 Vde)
hFE
lie'" 100 mAde, VeE = 10 Vdc)
25
30
(lc' 250 mAde, VCE • 10 Vdel
15
(lc • 500 mAde, VCE • 10 Vdel
250
5.0
Collector·E rnltter Saturation Voltage (11
'fie = 100 mAde, IS '" 10 mAde)
Vde
VCElsat)
1.0
lie'" 250 mAde, '8'" 25 mAdel.
2,5
10
(Ie:: 500 mAde, 'S "" 100 mAdel .
Base-Emitter Voltage (11
(lC' 100 mAde, VCE • 10 Vdel
1.0
VBE
Vde
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
(Ie'" 50 mAde, VeE = 10 Vdc, f '" 10 MHz)
IT
Output Capacitance
10
MHz
25
Cob
pF
IVCB' 10 Vde, IE • 0, I ' 100 kHz)
Small-Signal Current Gain
hi.
20
IIC' 100 mAde, VCE • 10 Vde, I ' 1.0 kHzl
-IndIcates JEDEC RegIstered Data for 2N5655 Se,.es
(1) Pulse Test: Pulse WIdth'S 300 j.lS, Duty Cycle~ 2.0%.
(2) fT is defined as the frequency at which /hfel extrapolates to unIty.
FIGURE 3 - ACTIVE·REGION SAFE OPERATING AREA
1.0
10 •• -
~ 0, 5
...
s
ffi
o. 2>--
a
o. 1
0:
0:
0:
o
t;
3 0.05 _
8
... - 0,02
-
"\.
fl
Second Breakdown limit
- - Thermal limit @TC ::: 250 C
- Bonding Wire limit
CUi aPjlY bjl"j
30
40
60
'\.
"\
'\.
-
II
100
1.0ms
r-r-
2N5655
2N5656
2N5657
Th.f. are two limitations on the power handling ability of •
transistor: av.rag. junction t.mperatur. and second b.-eakdown.
Safe op.rating area curves indicate Ie - VCE limits of the transistor
that must be observed for rellableop.ration; i. •.• the transiltor must
not be subjected to groator dissipation than the curves indicate.
The data of Figure 3 is based on T J(pk) = 150°C; T C is
'\
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T J(pk)S150 0 C. At high
case temperatures. thermal limitations will reduce the power that
can be handled to values 1011 then the limitations imposed by second
bre.kdown.
~de
'j"j iCEO
0,0 I
20
"\. 500 ••
'\
TJ 'ISOoC
t--
~
1,\
200
300
400
600
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
4-153
2N5655, 2N6656, 2N5657
CUT-OFF CHARACTERISTICS
LARGE SIGNAL CHARACTERISTICS
FIGURE 4 - TRANSCONDUCTANCE
500
I
200
/
/ /
/
I .I
I
II
I
TJ=+1500c_1
100
l-
iii
rr:
+IOOoC_
I
rr:
'"'rr:
•
t;
r---
20
j
10
5.0
~
I
I
1.0
o
I
~
::B
I
I
7
I
I
-55°C 0.001
!
I
i/
II
/
0.4
0.8
0.6
0.0001
'-0.&
1.0
-
REVERSE BIAS ..
- 0.4
- 0.2
2.0
TJ = +1500e
r-..
I
1.0
1
I
I
I
I
/ / I II
1.0
+0.6
+0.8
I
+100·e
I
-
I
I
<
.5
w
:::>
I
+IOOoC
'"'0
0:
I
:I
0.1
z
::;
I
I
'--/....
t;
......
II
w
I
/ 7 -....~ If-. -
0.1
TJ' +1500e
II
I
I
>---+250e
-
VCE"2~OV
/
I
II
-tf-.)
0.2
+0.4
FIGURE 7 - EFFECT OF BASE-EMITTER RESISTANCE
I-
0.5
:::>
~
+0.2
10
I
'"
~
I-- FORWARD BIAS t--
VBE. BASE·EMITTER VOLTAGE (VOLTSI
5.0
'"'
.....,
+250C
FIGURE 6 -INPUT ADMITTANCE
w
II:
rr:
I
I
0.0 1
10
z
J
I
VBE. BASE·EMITTER VOLTAGE (VOLTSI
I-
II
+IDOoC
~
I
0.2
./
/
rr:
rr:
I
I
II
II
:::>
I
I
f-- TJ=+1500e
O. 1
I
2.0
-
V
I
'"'rr:.
I
I
0
'"'~
I-
1
7
+25 0C
VCE =200V
.s<
I
I
-./..
1.0
I
so
:::>
0
I
/ 1/
1/
I - - r-VCE-l0V
1
FIGI:IRE 5- TRANSCONDUCTANCE,
10
0.01
0
'"'~
-55°C
+25oC
0.05
0.001
I
I
0.02
0.01
I
o
I
0.2
I
I
I
0.4
I
I
I
0.&
0.0001
0.8
1.0
10
102
104
RilE. BASE·EMITTER RESISTANCE (OHMS)
VBE. BASE·EMITTERVOLTAGE (VOLTSI
4-154
2N5655,2N5656,2N5657
FIGURE 8 - CURRENT GAIN
300
200
1
z
;;:
'"
....
~
'":::>
'"c
'"
;
+IOOoC
10
50
~
~
-
- - : ; 50C
I
.J-- I-
~I""'"
-
.......
;--....
J
20 1--_ -55°C
~
-
-I-- -t-
2.0
.......
\
\ .......
I,\~
\
1\
5.0
3.0
1.0
20
ID
50
30
100
10
•
~~ ~
10
1.0
~
-
-~- I~ ~
f--t-""
30
-
- vCE= 2.GV
........
..1---
100
-- VCE= 10V
...:.. ._- --- ,
TJ=}1500~
200
500
300
IC. COLLECTOR CURRENT (mA)
FIGURE 91- "ON" VOLTAGES
1.0
II II
Iva~( I) ~ I~A
0.8
~
w
I
1= 10
ill-A:::::
~
c
VaE@VCE= 10 V
0.8
-
1
"~
/
-
-
0.2
V
-
VCE("tl Ic/la = 10
V
I-f-
10
U
~
50
u'
30
III
r-
10
20
.......
100
200
300
500
0.1
0.2
0.5
IC. COLLECTOR CURRENT (mA)
2.0
:g
:&
-"
5.0
10
50
20
100
10
,
-
1,-
'--I:
....
i"-<~ Id
Iclia =10
Icl1a= 10
=1=
__ VCC = 300 V. VaElolf) = 2.0 V
12N5856. 2N5651. only,
-VCC· 100 V. VaElolf)' 0 V
5.0
2.0
..
0.2
w
:&
-"
~
~
0.01
2.0
5.0
10
20
50
100
1"-
1\
200
0.5
If
N. VCC= 100V
-
0.02
~,
1.0
;:
0.1
0.05
Is -
r-..
:g
0.5
1.0
,
1=
w
;:
2.0
FIGURE 12 - TURN'()FF TIME
FIGURE 11 - TURN'()N TIME
1.0
1.0
VR. REVERSE VOLTAGE IVOLTS)
10
5.0
......
10
50
30
Cob
20
I I I
o
-
;3
TJ = +25 0C
Ic/la' 5.0
........ r-.-
w
./
j...-
TJ = +25 0C
100
'"z
....<
/
0.4
~'bl
200
/--1
/
'"
<
!:;
c
>
>"
FIGURE 10 - CAPACITANCE
300
VCC'300vl1~
0.2
(TYPl2N5656. 2N56~7. only)
0.1
500
1.0
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENTlmA)
4-155
_
I:>
_
II.
100
200
500
2N5683, 2N5684 PNP (SILICON)
2N5685, 2N5686 NPN
50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
HIGH-CURRENT COMPLEMENTARY
SILICON POWER TRANSISTORS
· .. designed for use in high·power amplifier and switching circuit
applications.
60-80 VOLTS
300 WATTS
• High Current Capability - IC Continuous ~ 50 Amperes.
• DC Current Gain hFE~ 15-60@IC~25Adc
• Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 1.0 Vdc (Max) @ IC ~ 25 Adc
*MAXIMUM RATINGS
Svmbol
2N5683
2N5685
2N5684
2N5686
Unit
Collector-Emitter Voltage
VeEO
60
80
V.de
Collector·aase Voltage
Vea
60
80
Rating
Emitter-Base Voltage
Vdc
VEa
5.0
Vde
Collector Current - Continuous
Ie
50
Adc
Base Current
la
15
Adc
Po
300
1.715
Watts
wloe
TJ.Tstg
-65 to +200
°e
Total Device Dissipation@Te
= 250C
Derate above 25°C
Operating and Storage Junction
Temperature Range
*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Q
-Indicates JEOeC Registered Dat8.
FIGURE 1 - POWER DERATING
300
;;; 250
S
~
"-"-
STYLE 1:
PIN 1. BASE
2. EMITIER
CASE. COLLECTOR
I'-,
200
c
;:
~ 150
""'" "-
iii
is
ffi
~
100
'~
"- "-
~ 50
20
40
60' 80
100
120
140
160
INCHES
MIlliMETERS
DIM MIN MAX
MIN MAX
A 38.35 39.31 1.510 1.550
19.30 21.08 0.160 0.830
8
6.35
1.62 0.250 0.300
0
1.45 1.60 0.051 0.063
0.135
3.43
E
.1 1
F
29.90 30.40 1.111
G· 10.61 11.18 '0.420 0.440
5.21
5.1
0.205 0.225
H
O. 5
J
16.64 11.15 0.
K 11.18 12.19 0.440 0.480
3.84 4.09 0.151 0.161
II
R 24.89 26.61 0.980 1.050
-
'I'-.
180
200
TEMPERATURE (DC)
Safe Area Curves are ind iested by F igurs 6. A II limits are applicable end must be observed.
4-156
-
CASE 197-01
TO·3 Except Pin Diameter
2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN
-ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted)
Characteristic
Svmbol
Min
Mall
60
80
-
-
1.0
1.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
Vdc
VCEOlsusl
2N 5683, 2N 5685
2N5684,2N5686
(lC = 0.2 Adc, 18 = 01
Collector Cutoff Current
-
mAde
ICEO
2N 5683, 2N 5685
2N5684,2N5686
(VCE = 30 Vdc, IB = 01
(VCE = 40 Vdc, 18 = 01
-
Collector Cutoff Current
Collector Cutoff Current
IVCB = 60 Vdc, IE = 0)
IVCB = 80 Vdc, IE = 0)
mAde
ICEX
IVCE = 60 Vdc, VEB(o!ll = 1.5 Vdcl
IVCE = 80 Vdc, VEB(o!ll = 1.5 Vdcl
1Vee = 60 Vdc, VEB(o!ll = 1.5 Vdc, TC = 1500 CI
1VeE = 80 Vdc, VEBlo!ll = 1.5 Vdc, TC = 1500 C)
2N5683,2N56B5
2N5684,2N5686
2N5683,2N5685
2N5684,2N5686
-
2.0
2.0
10
10
-
2.0
2.0
-
mAde
ICBO
2N5683,2N5685
2N5684,2N5686
Emitter Cutoff Current
IVBE = 5.0 Vdc, IC = 0)
lEBO
5.0
mAde
ON CHARACTERISTICS
DC Current Gain (Note 1)
(lc = 25 Adc, VCE = 2.0 Vdc)
(lc = 50 Adc, VeE = 5.0 Vdc)
Collector·Emitter Saturation Voltage (Note 1)
(lC
(lC
-
hFE
15
5.0
60
-
1.0
5.0
VBEI..tl
-
2.0
Vde
VBE(on)
-
2.0
Vdc
IT
2.0
-
MHz
Cob
-
2000
1200
pF
hie
15
-
VCElsat)
=25 Adc, IB =2.5 Adc)
=50 Adc,IB =10 Ade)
Base-Emitter Saturation Voltage (Note 1)
(lc = 25 Ade, IB • 2.5 Adc)
Base·Emitte, On Voltage (Note 1)
(lC = 25 Ade, VCE = 2.0 Vdc)
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(Ie = 5.0 Ade, Vce = 10 Vdc, I = 1.0 MHz)
Output Capacitance
2N5683, 2N56B4
2N5685, 2N5686
(VeB = 10 Vdc, Ie = 0, I = 0.1 MHz)
Small-5ignal Current Gain
(lC = 10 Ade, VCE = 5.0 Vde, I
= 1.0 kHz)
-Indicates JeOEC Registered Data
Note1: Pulse Test: Pulse Width S 300 ~'. Duty Cycle S 2.0%.
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
-30 V
+Z5
o 'LJ
tr<_:
ZOns
I-
,
•
FIGURE 3 - TURN'()N TIME
1.Q
TO SCOPE
o.7
" .. 20n.
R8
,
>--10t.100,...
DUTY CYCLE ~ 2.0%
!
V.CC -30 V
~
~.
0 - - £ +10 V>-oIW,-+-+oC
-12 V I _~
20 ns
-,
,-10tD 100,...
DUTY CYCLE .. 2.0%
-
O.3
-I
"We
:-1, ..
r-::
O.5
-12 V
O.Z
[
o. 1
ill
0.0 1
0.5 0.1
FOR CURVES OF FIGURES3&6, Rsa RLARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
C--
r-
--- --
2N5683, 2N5684 (PNP)
2N5685, 2N5686 (NPN)
-....
TJ=2SOC
Ielis = 10
VCc-30V
0.02
Vss
" ~
0.0 7
0.05
0.0 3
RS
....
1.0
~
2.0
3.0
5.0 7.0
10
Ic, COLLECTOR CURRENT (AMP)
4-157
["
20
30
50
2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN
FIGURE 4 - THERMAL RESPONSE
0
\-- - 0
5
3
0.2
~ iiii= P'"
--::::.- -
2
0.1
:;;;:1'
=
1=0.05
1=
7~ =-- f-0.0 2
5
- -•
0.5
.,...
\
~
rnn
DUTY CYCLE. D -11/12
II
0.1
-
11~2~
II
0.05
r-
pr
0.01
jllNGLEIPU~SE
0.0 1
0.02
OJCIt) = r~I!.OJC
OJC = 0.584oCIW Max _I ~
.~_
o CURVES A~PL Y FOR POWE~_
PULSE TRAIN SHOWN
- rr- r- READ TIME AT 11
r- TJ(pk)- TC = P(pk) 0JCII)-
0.2
0.5
1.0
2.0
5.0
I.TIME(ms)
II II
20
10
100
200
1000
500
2000
FIGURE 5 -ACTIVE·REGION SAFE OPERATING AREA
10 0
5001'S 10OIlS
0
;;;
...'"5
ffi
ec
8
...........
0
de
0
r-...
5.0 ~;--,
1' ....
\
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limitsof the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
1.0 ,"so
5. 0
TJ -200°C,
0-._ _ _ SECOND BREAKDOWN LIMITED
2.
- - - BONDING WIRE LIMITED
\ \
_ 1.
0 E - - - - THERMALLYLIMITEO@TC=250 C
o
(SINGLE PULSE)
~ O.51=
CURVES APPLY BELOW
RATED VCEO
2N5683. 2N5685
0, 2
2N5684. 2N5686
O. 1
2,0 3,0
50 70
1.0
5.0 1.0 10
20
30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
The data of Figure 5 is based on T J(pk) = 2000 C; T C is variable
ec
~
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk)";;20aoC. T J(pk) may be
F
II II
calculated from the data in Figure 4. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values less th~n the limitations imposed by second breakdown.
I
100
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN-OFF TIME
4.0
- - 2N5683. 2N5684 (PNP)
- - - 2N5685. 2N5686 (NPN)
3.0
I
2.0
I---::~~
Is
!
~
_
I T/.250 ci __
181=182 _ _
16"8= 10
CE =30V--
Ir=:."
30001--u..
~
...z
~~
1.0
5000
w
..
.........
~
200
T~=12M
I"o~
..........
'
01' .....
i3
0.8
0.6
If
0.4
"' .....
O. 3
O. 2
0.5 0.1
1.0
.......
..... ~ 1--
-,
- .•."
5.0 7.0 10
2.0· 3.0
IC, COLLECTOR CURRENT (AMP)
20
30
."
.... 1000
.....
.....
"
........
100 1 - - - 2N5683, 2N5684 (PNP)
o1 - -1- , fNf'~5i 5686 (~PN)
50
0.1
0.2
0.5
1.0
2.0
~.~b
C'b
Nb
......
rr
'C:"
50
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
4-158
C~b
r-'
20
50
100
2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN
PNP
2N5683. 2N5684
NPN
2N5685. 2N5686
I
FIGURE 8 - DC CURRENT GAIN
500
TJ = +150·C
300
200
r+++:-+25·C
z
~
>-
ffi
IX:
a:
:0
100
70
50
'"
'"
Cl
30
~
20
10
7.0
5.0
0.5
~
~
w
a:
- - -r--
r-..
~
g'"
ul
~
~
2.0
1.0
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMP)
\
IC= IDA
\25 A
TJ =
J
\
\
0.6
\
0.4
Cl
~51CI
!3
2:w
'"':;""
~
~
r-
:ii
w
a:
o
-
r-f-.
I--
0.2
20
0.5
1.0
2.0
lB. 6ASE CURRENT (AMP)
3.0
5.0
.
."
........ .... ~ ~
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMP)
1.0
........
.... ;
20
30
50
T~=12M
~5A- t-- 40~
--
1.2
\
\
\
0.6
~...
0.4
0
0.1
10
I
"II
i'"
I
~ IDA
1.6 r-IC
'"ul
>'"
o
0
0.1
~
0.5 0.7
o
'"w
;;
-
-55·C
0
\40A
\
1.2
t;
..... t::
30
7.0
5.0
50
30
- - VCE=2.0V_ - - - VCE=IOV
FIGURE 9 - COLLECTOR SATURATION REGION
_ 2.0
I
I
1.6
20
....
--
-....;;
+ 25·C
10 0
ffi 0
a:
~ 50
~l'"
0.7
~-
20 0
'">f",; ~
Cl
j
z
Tr+150·C
;;:
.;:
>'
/
VBE @VCE = 2.0 V
III
I I
VCE( ..,) @Iclla = 10
Vr~(~'" @lc:La ~
0.4
)C!(U)@IJIB='IO
20
30
5D
4-159
.....
V-
o
0.5 0.7
1.0
':/
~
//
lL
I
_f-'
/
VBE@VCE=2.0V
./
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMP)
1.
V
':;
I
r'
~ ~5.C
0;
/, V I
II
1.5
w
'"""':;
;J
IJ
V
2.0 3.0
5.0
10
IC. COLLECTOR CURRENT (AMP)
V
20
30
50
•
2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN
)
I
PNP
2N5683.2N5684
+9.0
I ~:~
'"
!2
w
r;3
~
8.
~
:::>
~
•
FIGURE 11 - TEMPERATURE COEFFICIENTS
+4.5
II
,:"MIIES FO~ IJIB < hlFeIi
LJJL
V
II
I
+Z50C10 +1500C
.
II .
.§ +30
~
f5
"'V I
./
l/
Y
fA'
,-
-
I
"eVC FOR VCE(sal)
-1.0
~ -2.0 HJ
~ -3.0 -IOVB FOR VBE
1111
I
-4.0
-5.0
0.5 0.7 1.0
2.0
i
II II
......
/' V
......
5.0 7.0
10
20
30
8
+1.0
~
:::>
+0.5 -'OVC FOR Vee(.. I)
0
1111
... -1.5
olv~ ~ciR
-2.0
1111
-2.5
0.5 0.7 1.0
i
50
VB~
-VCe=30V
103
10Z TJ ~
0
101 = 100Ac
......
150~C
L
""""
:::>
u
=
0
w
0
u
l...
z
w
;'
w
-I'"'"
V
V
,.....
V
""-
"""
-5150C101+Z5~C
2.0
3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMP)
ZO
30
50
FIGURE 12 - COLLECTOR CUTOFF REGION
104
-VCE =30 V
104
"""":::>
u
""t;
..../
./
~250C Id +1150~d
I
IC. CbLLECTOR CURRENT (AMPI
l...
z
/
b
+J50 0
(f" °
i\.
V
-550Clo+~M
'iiTi i\
l.J..!-' '\. """
L..- r-
Uti
~ -1.0
I
3.0
+1.5
~ -0.5
'.~50C;IO +15rO~t-
I
I
I
lz~Jc I
~
~
-550C10 +Z50C-
I
.
+2.5
G +2.0
-550C10 +Z5 0C
0
III
III
III
~ ~:~
J
U
- "APPLIES FO R Ic/lB < hFE/2
+5.0
+4.0
+3.0
+2.0
+1.0
NPN
• 2N5685.2N5686
IC=ICES
100
...w
10 3
L
10Z Tr 1500c
10 1=== 1000C
u
I-
IC = ICES
:::l 100
;'
0
u
!:!
!:!
10-1 = =Z5 C
-·.REVERSE
100Z
+O.Z
+0.1
FORWARO
0
-ll.1
-ll.Z
-ll.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
,===
10-
IO-Z
-ll.5
-ll.4
25 0C
-REVERSE
-ll.Z
-ll.1
0
+0: 1
FORWARO
+O.Z
+0.3
+0.4
+0.5
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - EFFECT OF EXTERNAL BASE·EMITTER RESISTANCE
~
:r
e
~
z
10 5
""
=
w
:::iii
104
w
103
::l
(TYPICALICES VALUES
10Z OBTAINED FROM FIGURE 12)
i~1i
10
ul
""'"
- (TYPICAL ICES VALUES
=OBTAINED FROM FIGURE lZ)
ZO
40
60
80
100 lZ0
140
TJ. JUNCTION TEMPERATU RE (DC)
2.0
5.u·
w
~
10Z0
=lc/ICES"1.
""
160
180
ZOO
4-160
10
o
20
40
60
80
100 lZ0 140
160
TJ. JUNCTIO NTEMPERATU RE (DC)
180
ZOO
2N5758, 2N5759, 2N5760 NPN
2N6226, 2N6227, 2N6228 PNP
HIGH-VOLTAGE HIGH-POWER
SI LICON TRANSISTORS
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
.... designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
•
High Coliector·Emitter Sustaining Voltage VCEO(sus) ; 100 Vdc (Min) - 2N5758, 2N6226
; 120 Vdc (Min) - 2N5759, 2N6227
; 140 Vdc (Min) - 2N5760, 2N6228
•
DC Current Gain @ IC ; 3.0 Adc hFE; 25 (Min) - 2N5758, 2N6226
; 20 (Min) - 2N5759, 2N6227
; 15 (Min) - 2N5760, 2N6228
•
Low Collector·Emitter Saturation Voltage VCE(sat) ; 1.0 Vdc (Max) @ IC; 3.0 Adc
100·12()'140 VOLTS
150 WATTS
••
'MAXIMUM RATINGS
Symbol
Rating
Collector-Emmer Voltage
VCEO
VCB
VEB
IC
COllector-Base Voltage
Emltter·Base Voltage'
Collector Current· Contmuous
Peak
Base Current
2N5758
2N6226
2N5759
2N6227
2N5760
2N6228
100
120
120
140
140
100
7.0-
-
6.0---10
4.0_
18
Total DevlceOLSSLpatlon@Tc
Derate above 25°C
Po
150_
_0.857_
TJ. T stg _ _ -65 to +200 _
25°C
Operatmg and Storage Junction,
Temperature Range
Unit
Vdc
Vdc
Vdc
A"dc
Adc
Watts
Characteristic
ESEATlN(~
PLANE
I
W/oC
°c
THERMAL CHARACTERISTICS
Symbol
I
Max
Unit
°JC
I
1.17
°C/W
Thermal Resistance, Junction to Case
Lr~
r~K
STYLE 1,
PIN 1. BASE
2. EMITTER
CASE' COLLECTOR
NOTE,
1. O1M '·0·' IS OIA.
-Indicates JEDEC RegIstered Data
FIGURE 1 - POWER DERATING
160
E!
r-- J".,.
140
~ 120
"'-
" "'"
2:
z
0
~
Bi
<5
~
3:
Ii:
~
100
80
60
40
DIM
"'" ~
20
A
B
~
0
0
25
50
75
100
125
150
~
m
200
TC. CASE TEMPERATURE lOCI
MILLIMETERS
MIN MAX
-
-
C 6.35
D 0.99
E
F 29.90
G 10.67
H
5.33
J 16.64
K 11.18
Q
3.84
R
-
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67
INCHES
MIN
MAX
0.250
0.039
1.177
0.420
0.210
0.655
0.440
0.151
-
ColieClorconnec1ed to case:CASE 11·01
TO-3
Safe area limits are indicated by Figure 5.
Both limits are applicable and must be observed.
4-161
1.550
0,830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
2N5758,2N5759,2N5760 NPN
2N6226,2N6227,2N6228 PNP
·ELECTRICAL CHARACTERISTICS (TC
I
= 2SoC unless otherwise noted)
I
Characteristic
Symbol
Min
Max
100
120
140
-
-
1.0
1.0
1.0
-
1.0
5.0
-
1.0
-
1.0
25
20
15
5.0
100
80
60
-
-
1.0
2.0
-
1.5
Unit
OFF CHARACTERISTICS
Collector-Emitter SustaIning Voltage (11
(lc
2N5758.2N6226
2N5759.2N6227
2N5760.2N6228
= 200 mAde. 18 = 0
VCEO(susl
'IVCE
IVCE
IVCE
= Rated
= Rated
•
= Rated
VCS. 'E
mAde
'CEX
Vca. VaElo!!1
Vca. VaElo"l
= 1.5 Vdcl
= 1.5 Vde •.Tc = 1500 CI
mAde
Icao
Collector Cutoff Current
IVca
mAde
2N5758. 2N6226
2N5759. 2N6227
2N5760.2N6228
= 50 Vde. la = 01
= 60 Vde.la = 01
= 70 Vde. la = 01
Collector Cutoff Current
IVCE
IVCE
-
ICEO
Collector Cutoff Current
= 01
Emitter Cutoff Current
IVSE = 7.0 Vde. IC = 01
Vde
mAde
'ESO
ON CHARACTERISTICS 111
= 2.0 Vdel
IIC = 6.0 Ade. VCE
= 2.0 Vde)
2N5758. 2N6226
2N5759.2N6227
2N5760. 2N622B
All Types
= 1.2 Adel
Base-Emitter On Voltage
IIc = 3.0 Ade. VeE = 2.0 Vdel
-
Vde
VCElsa.)
Collector-Emitter Saturation Voltage
IIc = 3.0 Ade. la = 0.3 Ade)
Ilc = 6.0 Ade. la
-
hFE
DC Current Gain
IIc = 3.0 Ade. VCE
Vde
VaElonl
DYNAMIC CHARACTERISTICS
MHz
Current-Gam - Bandwidth Product
1.0
(Ie :: 0.5 Adc, VeE:: 20 Vdc, f test:: 0.5 MHz)
Output Capacitance
IVce
= 10 Vde.
'E
=O.! =0,1
pF
Cob
300
MHzl
Small-Signal Current Gain
(lC = 2,0 Ade. VCE = 10 Vde.! = 1.0 kHzl
hie
15
·Indlcates JEDEC Registered Data
(1) Pulse Test: Pulse Width ~ 300 ~s. Dutv Cvcle ::;;; 2 0%
(2) fT "" I hfe I • f test
FIGURE 2 - SWITCHING TIME TEST
CIRCUIT
VCC
+30 V
SCOPE
RS
51
01
tr.tf~IOns
-4,0 V
DUTY CYCLE = 1.0%
RS and RC VARIED TO OBYAIN DESIRED CURRENT lEVELS
01 MUST BE FAST RECOVERY TYPE, .g'
MSDS300 USED ABOVE IS ~100 rnA
MSD6100 USED BELOW IS ='100 rnA
-For PNP test circuit, rev_ .... all polarities and 01.
4-162
2N5758,2N5759,2N5760 NPN
2N6226,2N6227,2N6228 PNP
NPN
2N5758. 2N5759. 2N5760
I
~N6226.
PNP
2N6227. 2N6228
FIGURE 3 - TURN·ON TIME
1.0
--,
0.7
5
~c9fB=}~oV
H+t-t-''''''.r-+-+-+++-I+++-- VaE(,ff) = 5.0 V
O. 2Ht+t---f-"'>k--l---jH4-H+t- TJ = 25'C
,
0.3 Hf't..c-+-+-+-+++-I+++--
];
w
";::
............
~
rrr-
0.21-++++--I-I+-_P--l:-+-H+I+_+-+_+-+-H
~ O'I~mffliiJI
0.05Sl!l=
'r-.
O.I~§1IEldmm
0021-+++t--+--j-~-~-++r+~-++-t-+~
0.07~
0.Q1 Ll..Ll.l.--L--l_....L--:!-,-L+'.Ll.l.;'::,---'-+.--'---!::--'-::'
O.OS
0.1
0.2
04 0.6
1.0
2.0
4.0 G.O
o og 0'::SLl..lO
f:-1 -1-":0::-2-1-":0.':4...l..:0:l:.S,.J-Ll:-1.'::-0--'--::2'::.0--'--'4"'0:--'--='S·0
IC. CO LLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT lAMP)
FIGURE 4 - THERMAL RESPONSE
1.0
_ O.
~~0=05
--
~ O.
.... ::0
ffi ~ 0.3
;;;'"
z 00.2
1.2
o
ffi
I
il
IC • 1.0 A
I
1.6 -~~.-j-+++lH+li+-I_-1_-H~+++~+'
I
2.0
~
S.OA
3.0 A
1.8 ---
0
~
w
'"«
-
1.4
~
Tp2SoC
0
""w
. _ . - --I-
~
~
O.B
~ 0.8-
_
8
~
>
0.6
0.4
o. 2
--
~
0
0.02
0.Q1
\
0.03
0.05
0.2
0.1
1.0 - -
:=
~~'"-H-+++l
2.5 A
'-.
1.0
o
IC· 1.0 A
> 1.2
~
g
1-+--f-+-H-l+-+-+-1j-1_. _+1-1_+-T+J _'j-25+0+C+l
If-I- .
--- -
-- --- -- -
06 - - - 1-- -
- .. _··1--t--I-t-+++11
-
~ 04-:~ - ~ 0.2 --,-1'-..-''4''''"+-++1+++--+-+-- j--+-++-H1H
0.3
0.5
~
10
O~~~~~~~~~~~~~c-~~-L~~LUU
0.01
002 0.03
'B. eASE CURRENT (AMP)
O.OS
0.1
0.2
0.3
0.5
1.0
'B. BASE CURRENT (AMP)
FIGURE 10 - "ON" VOLTAGES
1.4
_. -'-,---
,-
~TJ.250C
1.2
'~"
~
w
'"~
«
(--
.-- v'sE(~'tl@ Iclle·
~ ,..-:
----
08
10~-
~~EI.1210V-
0.6
0
0.4
I
0
0.06
0.1
0.2
0.4
I I I
Ii
0.6
II
1.0
/""
/'/
J = 25°C
/
/
V':
~ 1.0
o
--
VBE(",)@IClle - 10
Z. 0.8
'"«
~ 0.,6
/
VBE@JCE 2.0 V
>
::> 0.4
./
2.0
/
....I-f::l
w
-I-
-
i II II
VCE(",)@ ICIIB· 10
0.2
1.2
--
>
>~
1.4
V
? rL
-- -
.-
1.0
. '-IJ
I
VCE(",)@IClle= 10
0.2
l-
o
4.0
6.0
0.06
0.1
I
0.4
0.2
IC. COLLECTOR CURRENT (AMP)
0.6
1.0
--
2.0
4.0
6.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5
u
:>
+2.0
~
+lo 5
ffi
+1. 0
II
-
.. Applies for lells < hFEI2
TJ = 25°C to 1500e~
'55°C to 25°C"
U
~
+0 5
8
w
~
~
(JV for VBE
.~
-1.0
~
-I.S
i
-2.0
~L
TJ =25°C 10 150°C
-55°C to 250C
-0. 5
~
u
a.>
:>
"Applies For IC/18< hFE/4
-f2. 0
I II
..§. +1 5
~
.
",/
ffi
U
'OVC
+1.0
2SoC '\'fOo~
~ +0. 5
>--"1: .J..--
t':> ......
""
~ -0. S
~
~ -1.0
r-'" ~ _I-'"
~ -1.5
0.4
0.6
1.0
2.0
4.0
-2.S
0.06.
6.0
>::::: --1' ....
-t-I±-:"'r - 55 C~o 1251C
1
II
I
I
°lvB!rveE
0.1
0.2
0.4
0.6
1.0
IC. COLLECTOR CURRENT (AMP)
Ie. COLLECTOR CURRENT (AMP)
4-165
./
2tl!. to Isio c
-
i- 2.0
0.2
I
-55 DC to 25 0 C
w
>-
0.1
for VCE(",)
8
-2. 5
0.06
i2. 5
IIII
.J ~t \or vclr",i-
2.0
4.0
6.0
•
2N5758, 2N5759, 2N5760· NPN
2N6226,2N6227,2N6228 PNP
NPN
PNP
2N6226.2N6227.2N6228
I
2N5758. 2N5759. 2N5760
FIGURE 12 - COLLECTOR CUT·OFF REGION
10 4
.103
r--
VCE-50V
-
_.
TJ -150°C
~
I
-- f-/IOOOC
25 0 C-
I
-=
IC·ICES
II- f-REVERSE
1--
10-3
·0.4
•
FORWARD
REVERSE
-0.3
-11.2
-0.1
+0.1
+0.2
+0.3
+0.4
+0.5
10-2
+04
+0.6
+0.2
+03
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FORWARO-
+0.1
-0.1
-0.2
-0.3
-0.4
-
-
-0.5
-06
VBE. BASE·EMITTERVOLTAGE (VOLTS)
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
J
VCE - 50 V
""-
IC = 10 ICES
""-
""<
6
.......
IC=2ICES
5
.......
4
.......
'"
IC
~ (ii 10 5
10 X ICES
U:J~
~;;;
"'u
;£, ~ 104
r-..
\ICEf ....
~~
40
60
80
100
1:;'"
i'-..
~
"'"
(TYPICAL ICES VALUES
OBTAINED FROM
FIGURE 12)
102
20
~
,
, ~ffi
3
~
I-- f-:I-- I -
120
IC
ICES
103 ~ (TYPICAL ICES VALUES
~ OBTAINED FROM
FIGURE 12)
c:=
140
10 2
20
160
TJ.JUNCTION TEMPERATURE (OC)
40
60
80
100
TJ.JUNCTION TEMPERATURE (OC)
4-166~
120
140
160
2N5875, 2N5876 PN P(SILICON)
2N5877, 2N5878 NPN
COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
· .. designed for general·purpose power amplifier and switching applications.
•
low Collector· Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC 005.0 Adc
•
low Leakage Current ICEX = 0.5 mAdc (Max)
•
@
60·80 VOLTS
150 WATTS
Rated Voltage
Excellent DC Current Gain hFE = 20 (Min) @ IC = 4.0 Adc
•
• High Current Gain - Bandwidth Product fT = 4.0 MH2 (Min) @ IC = 0.5 A
*MAXIMUM RATINGS
Rating
Svmbol
2NS875
2NS877
2N5876
2N5B78
Unit
VeEO
60
80
Vdc
Collector-Base Voltage
VeB
60
80
Vdc
Emitter-Base Voltage
VEB
S.O
Vdc
Ie
10
Adc
Base Current
IB
4.0
Adc
Total Device Dissipation@TC=2SoC
Po
150
0.857
Watts
w/oe
TJ, T,tg
-65 to +200
°e
Collector-Emitter Voltage
Collector Current - Continuous
20
Peak
Derate above 250 e
Operating and Storage Junction
!f"~'
711
Temperature Range
THERMAL CHARACTERISTICS
~
Max
Characteristic
1.17
Thermal Resistance, Junction to Case
SEATING/
PLANE
K
~
I
~VlE 1:
PIN I BASE
-F-
-J-
I~/-" '"
b < ~t-~~
FIGURE 1 - POWER DERATING
160
i
140
120
~
100
~
80
;::
iii
~
3l
~
~
r--- i'..
",
..........
"-
60
,
.....
40
20
o
o
25
50
a
'
"
75
100
125
TC, CASE TEMPERATURE IOC)
2. EMITTER
CASE: COLLECTOR
CASE 11·01
'" "'"
150
175
200.
4-167
T0·3
...............
/
MILLIMETERS
DIM MIN
MAX
A
B
C 6.35
D 0.99
E
F 29.90
-
10.67
H 5.33
J 16.64
K 11.18
Q
3.84
G
R
NOTE.
I. DIM '"a'" IS OIA.
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67
Ii1
~
INCHES
MAX
MIN
0.250
0.039
-
1.177
0.420
0.210
0.655
0.440
0.151
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
Collector connected to case.
2N5875, 2N5876 PNP, 2N5877, 2N5878 NPN
·ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
I
Symbol
Characteristic
Min
Max
60
80
-
-
-
1.0
1.0
-
0.5
0.5
5.0
5.0
-
0.5
0.5
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lc = 200 mAde, ia = 0)
Collector Cutoff Current
(VCE = 30 Vde, 18 = 0)
(VCE = 40 Vde, IB = 0)
= 60
= 80
= 60
= 80
Vde,
Vde,
Vde,
Vde,
mAde
iCEO
2N5815, 2N5811
2N5816, 2N5818
Collector Cutoff Current
(VCE
(VCE
(VCE
(VCE
Vde
VCEO(sus)
2N5815, 2N5811
2N5816, 2N5818
mAde
ICEX
VaE(off)
VaE(off)
V8E(off)
VBEloff)
=
=
=
=
1.5
1.5
1.5
1.5
2N5815, 2N5811
Vde)
Vde)
2N5876,2N5818
Vde, TC = 150°C) 2N5815, 2N5811
Vdc, T C = 150°C) 2N5816, 2N5818
-
Collector Cutoff Current
mAde
ICBO
(VC8 = 60 Vdc, IE : 0)
(VCB = 80 Vdc, IE = 0)
2N5815, 2N5811
2N5816, 2N5818
-
Emitter Cutoff Current
lEBO
(VEB = 5.0 Vdc; IE : 0)
•
-
1.0
35
20
4.0
100
mAde
ON CHAR,ACTERISTICS
DC Current Gain
(lC: 1.0Ade,
(lc: 4.0 Ade,
(lC = 10 Ade,
(11
-
hFE
VCE = 4.0 Vdc)
VCE = 4.0Vde)
VCE : 4.0 Vdc)
Collector·Emitter Saturation Voltage (1)
Vdc
veE (sat)
(lc = 5.0 Adc, IB = 0.5 Adc)
(lc: 10 Adc, IB = 2.5 Ade)
Base-Emitter Saturation Voltage (1)
VBE"at)
-
VBE(on)
1.0
3.0
2.S
Vdc
-
1.5
Vdc
IT
4.0
-
MHz
Cob
-
(lC: 10 Ade, I B, = 2.S Adc)
Base·Emitter On Voltage (1)
(lC: 4.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain -:.- Bandwidth Product (2)
(IC = O.S Adc, VCE : 10 Vdc, f test = 1.0 MHz)
Output Capacitance
(VCB: 10 Vdc,IE = 0, 1= 1.0 MHz)
-
2NS815, 2NS816
2NS811, 2N5818
Small-Signal Current Gain
pF
-
SOO
300
20
-
-
t,
0.7
/loS
ts
1.0
/loS
0.8
/loS
hIe
(lC: 1.0 Adc, VCE : 4.0 Vde, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Rise Time
Storage Time
Fall Time
(VCC = 30 Vde, IC" 4.0 Adc, I Bl
See Figure 2)
= I B2 :
0.4 Adc,
"Indicates JEDEC Registered Data.
e1) Pulse Test: Pulse Width ~ 300 JJ.s, Duty Cycle S. 2.0%.
(2) IT = Ih,.I- 'test
FIGURE 3 - TURN'()N TIME
FIGURE 2 -SWITCHING TIME TEST CIRCUIT
VCC
-3~ V
1.0
7.5Sl
:~OV~=CJ
RB
O1 25,.,1
RC
0,3
SCOPE
25Sl
_l1V __
VCC = 3D V
lellB = 10
TJ=250 C
0.7
-
0.5
51
'::-...
0.2
:;
~
,,~
~
I,
-
~
I"-
0.1
S 0.07
lei @VBE(off) = 5.0 V
0.05
tr. tf:s:10 ns
DUTY CYCLE = 1.0%
For NPN test circuit,
reverse all polarities.
+4.0 V
FOR CURVES OF FIGURES 3and 6,
RB and RC ARE VARIED TO OBTAIN
DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, e.g.
MBD5300 USED ABOVE IB ~ 100 mA
MSD6100 USED BELOW 'B ~ 100 mA
0.03
0.02
0.01
0.1
n
2N5875, 2N5876 (PNP)
2j 5
jNtN)
-'-I--'1 2N5
0.2
0,3
ri
0.5 0.1
1.0
2.0
3.0
IC, COLLECTOR CURREi'I"i IAMPERES)
4-168
5.0
7.0
10
2N5875, 2N5876 PNP, 2N5877, 2N5878 NPN
FIGURE 4 - THERMAl, RESPONSE
1.0
~
~_
wO
o. 7;::0
o.5
0.5
-
;;..
",w
:: ~ o.3 =
0.2
"''''
0.1
w:E
<;;0:
O. 2
",0
"''''
-
r-
f-- r-,...
~: o. 1=0.05
~ ~ 0.0 7 :::::::0.02
~ ~ 0.0 5
-
'"
tt; ~O.03
:....I< 0.01
...
'2
ErUl
tt--J
P(pk)
-
0.02
,
DUTY CYCLE. 0 = l1/t2
SING LE PU LSE
III
0.0 1
om
0.02 0.03
0.05
0.1
0.2
0.3
0.5
2.0
1.0
3.0
5.0
I
" II10
20
30
8JC(t) = ,It) 8JC
8JC = 1.17 °CIW Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At tl
TJ(pk) - TC = P(pk) 8JCIt)
50
100
200
300
500
1000
t, TIME (m,)
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
....., ......,
20
;
10
:E
7.0
5.0
S
~
'"
I I "
r- C-TJ - 200°C
5~ 3.0
...........
1"--
0.1
1,
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran
sistor that must be observed for reliable operation, i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 5is based on T J(pk) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are
valid for dutV cvcles to 10% provided T J(pk)
200°C. T J(pk)
maV be calculated from the data in Figure 4. At high case
temperatures, thermal Iimitations will reduce the power that can
be handled to values less than the limitations imposed bV second
breakdown.
.
1.Oms
a
de
.....,
0.5 ms
5.0 ms,\
2.0
0:
o
SECOND BREAKDOWN L1MITEO
BONOING WIRE LIMITED
THERMAL LIMITATION @lTC 25°C
(SINGLE PULSE)
-
...
~ 1.0
0.7
8 0.5
!\
0.3 ,-CurvesApply Below Rated VCEO- 2N5B75. 2N5B77- :2NrB7~, 2N5BlB
0.2
5.0
7.0
50
10
20
30
VC~, COLLECTOR·EMITIER VOLTAGE (VOLTS)
1\
70
<
100
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN-OFF TIME
10
700
7.0
5.0
3.0
- --
t-
2.0
t-~
]
w
:E
>=
VCC = 30 V
IC/IB = 10
IBI = IB2
TJ = 25°C
I-
1.0
300
U
200
~
-
-=== ~:~:;;: ~:::;: I~~~))
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
100
7.0
10
IC, COLLECTOR CURRENT (AMPERES)
Cib
r-::::
...... .....
~
<.i
.....
-
0.3
0.2
..,zw
;t
tl
.. -...;:: ~ r--..
~
,t!.,
0.7
0.5
I
TJ = 250 C
500
~
I>..
.........
Cob,~
- - - 2NS875,2NJ61p)
- - - 2NSB77,2NS878 (NPN)
-- -- "-
70
0.5
1.0
2.0
3.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-169
r-....
20
30
so
•
2N5875, 2N5876 PNP, 2N5877, 2N5878 NPN
NPN DEVICES
2N5811 and 2N5818
, PNP DEVICES
2N5815 and 2N5816
200
z
100
~
70
0-
z
::l. 50
II:
::J
g'"
30
.c
20
...w
-
FIGURE 8 - DC CURRENT GAIN
- - -l- I"--
T~ =' llo~cl
1000
I
r- lli
500
. VCe=4.0V
«
to 200
25DC
0-
·-55DC
.......
•
0.2
0.3
'."'-
'" ""
I'-...
0.5 0.7
1.0
2.0
r-- I -
-"
......
25°C
ffi
....... !',.
G;1O0
...
::J
~
I"
10
0.1
VCe=4.0V
TJ = 150DC
z
3.0
-55DC
........
......
,.....
20
10
0.1
5.0 7.0 10
2.0 3.0
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMPERES)
0.2
IC. COLLECTOR CURRENT (AMPERES)
5.0 7.0
10
FIGURE 9 - COLLECTOR SATURATION
REGION
~ 2.0
o
?
w
~
II II
II
le= LOA
4.0 A
TJ = 25°C
1.6
~
ffi
III
ill
IC= LOA
> 1.2
II:
-
~
~ 0.8
\
II:
t
II
8.0A
4.0 A
10
50
100
\
ii
1\
~ 0.8
t;
t-I-
~
c5
'"ul
...
>
20
1.2
t:
0
5.0
1\
o
\
\
0.4
TJ=2~DC
II
'111
o
o
~
o
'"ul
!t
E2.0 ill
o
2:
::: 1.6
8.0 A
200
1000
500
2000
0.4
0
5000
5.0
10
50
100 200
500
lB. 8ASE CURRENT (mA)
20
lB. BASE CURRENT (mA)
1000
2000
5000
FIGURE 10 - "ON" VOLTAGES
2.0
1.4
TJ " 25°C
TJ = 25°C
1.2
I
I
I
1.6
u;
!:i
0
?
w
'"~
0
~
1.2
r-- I-
VBE(sat) "lellB = 10
V~E~ve~=~.Jvl
0.8
;'"
~
~ f-"""
~
/
,;
V
VCE(III) "lcllB = 10
....-
o
0.1
0.2
0.3
0.5 8.7
1.11
3.0
o.6
§!
>- 0.4
..... 1-2.8
....... :,....--
VBE(sat) "lclI8 = 10
~ 0.8
w
>
0.4
~ 1.0
r-- l -
i 4'j 'I
I I I II
I I I II
0.2
5.D 7.0 10
VB~ "VfE
.......
VCE(..t) .IC/IB "10
0.1
0.2
0.3
0.5 0.7
I-1.0
Z.O
3.0
IC. COLLECTOR CURRENT (AMPERES)
IC. COLLECTOR CURRENT (AMPERES)
4-170
5.0 7.0
10
2N5875, 2N5876 PNP, 2N5877, 2N5878 NPN
PNPDEVICES
2N5875 and 2N5876
NPN DEVICES
2N5877 and 2N5878
FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5
+2.5
'APPLIES FOR IcilB< hFE/4
~+2.0
:;;
oS +1.5
~
--
'OVC fDr VCE(sat)
+0.5
w
c
j... V
..l-
-55DC t~ 25DC
u
I
w
~
-0.5
....
.,
t-"
-2.5
0.1
0.3
0.5
1.0
~
2.0
3.0
5.0
1
-1.0
10
;.V
.l
... :::::: 1-:1-"'""
-55DC tD +25DC
~
~ -1.5 -OVBfDrVBE
~
_
-55 tD 25DC
+25 DCtD +150DC
::>
...
....- _i"'" ....
Jill
1"'-,...
~ -0.5
V
25 DC tD 150DC
'OVC fDr VCE( ..t)
8
V
I I
0.2
~
-55DC tD 25DC
I I I II
~ po
OVB IDrVBE
~-2.0
1/
+1.0
~ +0.5
/'
h /
,;
+1.5
~
~
I I
25DCtD 150DC
~ -1.0
w
~-1.5
w
.s
I- ~V
25 DCtD 1500C
~ +1.0
w
;:;
'APPLIES FOR IC/IB < hJ.E/4
~ ·+2.0
-I
-2.0
'"
-2.5
0.1
0.2
0.3
2.0
1.0
0.5
I
1
l.O
5.0
11
U
10
IC. COLLECTOR CURRENT (AMPERES)
IC. COLLECTOR CURRENT IAMPERES)
II
FIGURE 12 - COLLECTOR CUT-OFF REGION
10.000
1000
VCE'JOV
1,/
-VCE - lO V
1000
....
ffi
~ 100
....
z
100
0::
0::
~
- Tp 150DC
::>
u
10
0::
~'"
-
::>
u
~ 1.0
r-looDC
1.0
u
~
0.1
' - ~ REVERSE
L
g
IC -ICES
~
u
t====
o.1 =
FORWARD
0.0 1 =
25DC
100De
IC 'ICES
FORWARD
REVERSE
= 25DC
./
0.01
+0.2
TJ'150 DC
10
0::
-0.1
+0.1
-0.2
-0.3
-0.4
-0.5
0.00 1
-0.2
-0.1
+0.1
+0.2
+O.l
+0.4
+0.5
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
.. '1
FIGURE 13 - EFFECTS OF EXTERNAL BASE-EMITTER RESISTANCE
VCe-lOV
0::
~
;e-
IC'10xICES
I • 10 x ICES
106
:z~'" -r- IC=2xICES
.,
~ ;-105
.... u
====
IC·2 x ICES
0.2
0.1
0.3
0.5
0.7
1.0
2.0
3.0
1.6
0.4
1\
0
0.03
0.05 0.07 0.1
IJI
I
...
!:;
'"
>
>-
,1.'/
1.2
IVjE1(ri@
o.B
I~ ~
~~
IIJI!
1
HVCf(~tJ @Iclls:..!3.0
0.5 0.7
1.0
2.0
0.7 1.0
2.0
3.0
I
~
~
7
1. 2
w
to
~
>
>-
iI'
I"'"
10
20
IC. COLLECTOR CURRENT(AMP)
0
0.2
::;>
/
0.3
~ I~/!S '= 110
0.5 0.7
1.0
I.-I-
2.0
3.0
5.0 0.7
IC. COLLECTOR CURRENT (AMP)
4-175
~
~SE ~ VfE ~ ~'Ol ~
I- JcE{ltJ
5.0 7.0
~
O.Sf- VISE("') @IC/lS= 10
O.4
V
3.0
0.5
in
!:;
I
II
_'.I.
o.4
0.3
TJ = 25°C
1.6
C
-rBIEirtE-Y V
0
0.2
,
I
in
!:;
~
0.2
lB. SASE CURRENT (mAde)
TF 25°C
to
-
1\
i\
FIGURE 10 - "ON" VOLTAGES
2.0
w
TJ = 25°C
~
lB. BASE CURRENT (AMP)
2.0
20
!
8
0.05 0.07
12 A
6.0 A
'"
ul
>'"
IC = 3.0 A
1.6
~
'">
~
r-
\
'"t.
j
'"2:
""
10
\I
III
~
12A
6.0A
IC = 3.0A
~
~
r--t--.
0
IC. COLLECTOR CURRENT (AMP)
. in 2.0
!:;
...........
0
~
0
0.5 0.7
I
~ 200
0
0.3
~'500C
to
~ 50
0
0.2
VCE 4.0V- f-
z
;r 30 0
TJ = 150°C
I-
:ii
a'"
1=
1000
70o~_
500
10
20
•
2N5879, 2N5880 PNP, 2N5881, 2N5882 NPN
PNP
2N5879. 2N5880
NPN
2N5881.2N5882
FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5
~
+2.0
....
ffi
+1.0
25 DC ID +15ODC
>
~ +1. S
-SSDC ID +25 DC
w
w
~ -0. 5
25 DC ID +15O DC
-55 DC ID +2SD~,
....
•
-1. 0
~
-1.S
....
~ .....
....
OrB fDr VBE
2SIDC ~D ~'So~C
-S5DC ID +15ODh
~. +1.0
~fo'
U
~
V
t{).5
/
w
:: -1.0
....55
-Ui
~ -2.0
0.3
O.S 0.7
1.0
2.0
3.0
S.O 7.0
-2.S
0.2
20
10
0.3
O.S 0.7
IC. COLLECTOR CURRENT (AMP)
/
b
1.0
/
:->
I--" .....>
r--
OVB fDr VBE
I
7
25 DC tD +1S0DC
-55 DC tD +25Df'
'"
~ ~.S
?
.> .....
/
-
'OVC fDr VCE(sal)
8
-2. S
0.2
"ApplieslDr Ic/lB"hF~/5
+2.0
;;; +1.5
:> -2 .0
'"
+2.5
E
"OVC fDr VCE(sal)
8
ff]
G
3;
!;'
.;'
U
E:. +0.5
I
/
"Applies fDr ICIIB" hFEIS
,
2.0
3.0
5.0 7.0
10
20
IC. COLLECTOR CURRENT (AMP)
FIGURE 12 - COLLECTOR CUTOFF REGION
103
,
/
;;: 102 1== TJ = 150 DC
oS
....
z
~
10 I
'"
'"~
10 0
j
- lOoDC
:::>
25 DC
g
TJ =150 DC ::;; .£- f--IOoDC,
~
10 1
a'"
100
'"
.
25DC
..?
o
~
IC = ICES
810-I
30 V-
VCE
<.3
- 10-2
10~
31 '
+0.4
lO-
12: REVERSE ~
S
=
FORWARD
~ 10-2
EREVERSE
+0.3
+0.2
VCE - 30
FORWAROp
-0.1
+0.1
-0.2
-0.3
-0.4
-0.5 -0.6
V::::::
IC -ICES
10-3
-0.2
-0.1
+0.1
+0.2
+0.4
+0.3
+0.5
VBE. BASE-EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTERVOLTAGE (VOLTS)
FIGURE 13 - EFFECTS OF EXTERNAL BASE-EMITTER RESISTANCE
'\.
"-
"
VCE - 30Vd,
"
i"--
""-
:--..
:-....
"
40
60
80
" " r--...
........
VCE = 30 Vd,
IC = 51CES
........
"-
".......
~lolfES
.......
........
IC'~
IC~ICE~
100
""
5
31=FOR TYPICAL ICES VALUES
~, ~EE FIGUR,E 12., I
10 2
20
=
120
140
160
r-...
IC-2ICES I-- -
I-- -
.......
"
4-176
"-
......
IC ~ ICES
1= FOR TYPICAL ICES VALUES
1='1
~EE F1IGU,E 12'1 1
102
20
40
60
80
100
120
TJ. JUNCTION TEMPERATURE (DC)
TJ. JUNCTION TEMPERATURE (DC)
.... :-....
140
160
2N5883, 2N5884 PNP (SILICON)
2N5885,2N5886NPN
COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS
25 AMPERE
· . . designed for general-purpose power amplifier and switching
applications.
COMPLEMENTARY SILICON
POWER TRANSISTORS
o Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
•
Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
•
Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
•
High Current Gain Bandwidth Product fT = 4.0 MHz (min) at IC = 1.0 Adc
60-80 VOLTS
200 WATTS
•
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
2N5883
2N58B5
2N5884
2N5BB6
Unit
VeEO
60
BO
Vdc
Collector· Base Voltage
VeB
60
80
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Ie
25
50
Adc
Collector Current - Continuous
Peak
Base Current
IB
7.5
Adc
Total Device Dissipation@TC-2S!='C
Po
200
1.15
Watts
wloe
TJ.Tst9
-65 to +200
°e
Derate above 2SoC
Operating and Storage Junction
.L~'~'
fe"
Temperature Range
THERMAL CHARACTERISTICS.
K
SEATING
0
I
PLANE
STYLE 1:
PIN
1.
BASE
(--F2. EMITTER
CASE: COLLE CTOR
Characteristic
Thermal Resistance, Junction to Case
r---J-
v~
Q
l~:t
FIGURE 1 - POWER DERATING
200
in
....
....
~
z
0
>=
~
175
150
125
~
100
a:
75
~
50
C
!;:
~
'" "'-
~
A
B
"-
C
D
"-
""
25
50
75
100
125
TC. CASE TEMPERATURE (DCI
150
"'"
'"
175
200
4-177
-
-
6.35
0.99
E
F 29.90
G 10.67
H 5.33
J 16.64
K 11.18
Q
3.84
R -
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
28.67
INCHES
MIN
MAX
0.250
0.039
1.177
0.420
0.210
0.655
0.440
0.151
-
NOTE:
ColI.ctor conn.ct.d to c....
1. OIM ""Q""IS OIA.
CASE 11-01
TO-3
1
luI
~o/
MILLIMETERS
DIM MIN
MAX
25
o
o
t
.~
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
2N5883, 2N5884 PNP, 2N5885, 2N5886 NPN .
-ELECTRICAL CHARACTERISTICS (TC = 2SoC unless otherwise noted)
Symbol
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
IIC = 200 mAde, IS • 01
-
-
2.0
2N5883, 2N5885
-
1.0
2N5884, 2N5886
-.
-
1.0
..
--
1.0
-
1.0
35
-
20
4.0
100
-
1.0
-
4.0
ICEO
2N5883, 2N5885
IVCE = 40 Vde,la = 01
2N5884, 2N5886
Collector Cutoff Current
IVC.E = 60 Vde, VBElofll
IVCE
IVCE
IVCE
= 1.5 Vdcl
= 1.5 Vde)
= 80 Vdc, VaElofll
= 60 Vde, VBElofll • 1.5 Vdc, TC = 1500 CI
=80 Vde, VSEloff) .. 1.5 Vde, TC = 150°C)
2N5883, 2N5885
2N5884, 2N5886
= 60 Vde, IE =0)
IVca = 80 Vdc, IE = 0)
2N5883, 2N5885
2N5884, 2N5886
Emitter Cutoff Current
•
IESO
= 5.0 Vde, IC = 0
mAde
2.0
10
10
mAde
le80
!Vca
.
mAde
ICEX
Collector Cutoff Current
(VES
Vdc
-
60
SO
= 01
Unit
MIX
VCEOlsusl
2N5883, 2N5885
2N5884, 2N5886
Collector Cutoff Current
IVCE • 30 Vdc,IB
Min
1.0
mAde
ON CHARACTERISTICS
DC Current Gam (1)
= 3.0 Ade,
-
hFE
=4.0 Vde)
(lc = 10 Ade, VCE =4.0 Vdc)
IIc =25 Ado, VCE = 4.0 Vdc)
IIC
VCE
Collector-Emitter Saturation Voltage t u
= 15 Adc, la = 1.5 Adc)
IIC =25 Ade, la = 6.25 Adcl
Vde
lie
Base-Emitter Saturation Voltagfl (11
IIC = 25 Ade,la = 6.25 Adc)
VBElsa.)
Base-Emitter On Voltage (11
VBElon)
fT
(lc
-
VCE(sa.)
= 10 Adc, VCE =4.0 Vdel
2.5
Vdc
-
1.5
Vdc
4.0
-
MHz
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
lie = 1.0 Ado, VCE = 10 Vdc, f test
= 1.0 MHz)
Output Capacitance
IVea = 10 Vdc, IE
1000
500
2N5883, 2N5884
2N5885, 21115886
Small-Signal Current Gain
IIC
pF
Cob
=0, f = 1.0 MHz)
-
20
hfe
=3.0 Adc, VCE =4.0 Vde, f test ·1.0 kHz)
-
SWITCHING CHARACTERISTICS
Rise Time
(Vec = 30 Vdc, Ie' 10 Ade,
Storage Time
lSI = la2 ~ 1.0 Adel
Fall Time
-Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width-C;: 300 ",5, Duty
Cycle~
"
0.7
's
1.0
tf
0.8
2.0%.
FIGURE 2 - SWITCHING TIME EQUIVALENT TEST CIRCUITS
TURN-ON TIME
-30V
FIGURE 3 - TURN·ON TIME
2.0
3.0
+25_ _ _
10
'LJ
o
tr<: :
20ns·
I"
:
RB
100~,
cF
__ ~ ;-trc.;20ns
--,
,- 10 10 100~,
DUTY CYCLE", 2.0%
.....
~ 0.2
TURN-OFF TIME
,,
0.3
VCC -30 V
RB
--..
./
t,
2N5B83, 2N5884 (PNPI
2N5885, 2N~8B6INPNI
0,1
Id-
0.0 7
0.05
TO SCOPE
.r<:20 ns
0.03
-11.0 V :
0.02
0.3
VBB
FOR CURVES OF FIGURES 3,. 6, RS,. RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES
"."'"
~.
3.0
10
J.
Ic/lS = 10
VCC = 3D V
VBElolf) =2 V
0.7
0.5
~
-
TJ = 25°C
1.0
-11.0 V
-I
'-101o
DUTY CYCLE", 2.0%
O·
TO SCOPE
tr~20 ns
0.5 OJ
1.0
2.0
3.0
5.0 7.0
IC, COLLECTOR CURRENt (AMPERES)
4-178
10
20
30
2N5883, 2N5884 PNP, 2N5885, 2N5886 NPN
FIGURE 4 - THERMAL RESPONSE
1.0
.. o.S f-- iL
we
....
0= O.S
"t-N
w
0.2
W:E
0.1
~~ O. 2
inee
~~
eet-
a.1
w
P
w'-'
~~o.o S
'-'''' .......
~f3
~ee
w
"'2:
0.0 2
F
--
DUTY CYCLE. 0 = I11t2
-::::::: ::::;
.0"
0.02
Ptnfi
I1-r=;2~
0.01
f'iNG LEI PUt SE
V
.,
0.0 1
0.02
-
OJc(t) - r(t) 8JC
8JC = O.875oC/W Max _III
o CURVES APPLY FOR POWER:
PULSE TRAIN SHOWN
- I----,
I- READ TIME AT 11
r- - TJ(pk) - TC = P(pk) 8JCh)-I -
Tl
O.OS
III
0.1
0.2
O.S
1.0
2.0
S.O
IIIIII
10
20
50
100
sao
200
1000
2000
t.TIME(ms)
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
10a
a
0
-- --- - -
SOOI'S'=
...
a
~.lms
SiS ...
.~
...
...
There are two limitations on the power handling ability of a
transistor:
~
average junction temperature and second. breakdown .
Safe operating area curves indicate IC~VCE limits of the transistor
0
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
TJ = 2000 C
Of-- --SECOND BREAKDOWN LIMITED
- - - BONDING WIRE LIMITED
----THERMAL LlMITATION@TC-2SoC
SINGLE PULSE
Curm Apply Bolow Rated VCEo
f--
The data of Figure 5 is based on T Jlpk) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJlpk) ..;; 200 o C. T Jlpk) may be
calculated from the data in Figure 4. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values less than the limitations im'posed by second breakdown.
de
DE
5~
0.2
O. 1
1.0
TIlT
2.0. 3.0
10
5.0 7.0
2NS883,2N588S ."
2NS884, 2N5886
t-
20
50
30
70
100
VCE, COLLECToR·EMITTER VOLTAGE (VOLTS)
FIGURE 6 - TURN-OFF
0
7.0
S.O
t=:
-
3_0
"--I
2.0
~
T~ME
FIGURE 7 - CAPACITANCE
=
2NS883, 2NS884 (PNPI
2NS88S, 2NS886 INPNI
ts
1.0
-.
~
~_ 0.7
O.S
ts
TJ=2SoC
VCC=30V=
'cilB=10 IB1=182 -
w
1000
tf
01
~~
.....
....!!.
..
700
--
It
./
"\.
'-'
U
...
\.
0.1
O.S 0.7
1.0
2.0
3.0
S.O
7.0
10
20
.......
SOD
300
30
i'-.. .
Cib
"
<3
0.3
0.3
r.l
;:
.........Cob
~
.e-
0.1
0.2
+J! 21s cI
.1
~
....
J
I
' ...
200 0
.......
,
300 0
-
O.S
~
~i~
i'~
NI
t
2NS883, 2NS884 JNt
2NS88S, 2NS886 INPN)
1.0
2.0
5.0
I......
" I",.,..Cob
"
. 10
VR, REVERSE VOLTAGE IVoLTS)
IC, COLLECTOR CURRENT IAMPERES)
4-179
20
"
SO
100
2N5883, 2N5884 PNP, 2N5885, 2N5886 NPN
PNPDEVICES
2N5883 ahd 2N5884
NPN DEVICES
2N5885 and 2N5886
FIGURE 8 - DC CURRENT GAIN
1000
700
50Of- TJ'1500C
z 300
;;:
'"
....
2~
20 0
::>
~
70
0
~
ffi
..,..,
C>
ul
r
10
0.3
VCP 4.0 V
'" 200
0
•
30
.;;:
r- ".........:: ~
~ 100
C>
z
i:""---
f--ssoC
15
1000
700
SO0
i==
VCE =4.0 V
0.3
O.S 0.7
2.0
1.0
IC. COLLECTOR CURRENT (AMPERES)
3.0
""~
5.0 7.0
r--..20
10
30
IC. COLLECTOR CURRENT (AMPERES)
FIGURE 9 - COLLECTOR SATURATION REGION
-
~
'"
w
~
'"
2.0
I I
1.61-
III
I
1~!oA- I\o~
ICI'2'u
lii
TJ = 25 0 C
'"~
w
'"
«
!:;
'">
'"w
20A
~
'">ox:
1.2
"-
~
~ o.8
ox:
~
1.6
II
1111
II
ICc 2.OA
:E
w
~
8
..,
ul
:>
I'.
0.02
O.OS
0.1
0.2
0.5
1.0
20A
1.2
~
0.8
....
'"
0
0.01
TJ = 25°C
lOA
S.OA
1=
'"
'"t:;
j O.4
..,'" .
ul
2.0
!:;
2.0
5.0
10
I'
1\
0.4
1\
o
0.01
0.02
0.05
lB. BASE CURRENT (AMPERES)
0.1
0.5
0.2
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT (AMPERES)
FIGURE 10 - "ON'; VOLTAGES
2.0
2.0
,
I
TJ = 2S oC
1.6
~'"
~
V.
.......
D.8
'">,,:
0.4
o
0.3
V~E~VfE)=14IVI
VJE(!tI
~
!c\li
0.5 0.7
~
'"
:>
i'"
3.0
5.0 7.0
10
20
~ IV
1.2
0.8
~
30
IC. COLLECTOR CURRENT (AMPERES)
I
~~
VtE(sat) @lc/18 = 10
V
VBE@VCE=4V
>. O.4
I-'
2.0
L~
~Ir
w
,/
lID
1.0
~
'"
~
II
L..- i-:::~
VBE(sat) @IC/IB = 10
1
TJ = 2SOC
1.6
h
1.2
w
'"~.
~
0
0.3
V
V~E(~ti JIl/IBI = 10
0.5 0.7
1.0
.2.0
3.0
S.O
7.0
10
IC. COLLECTOR CURRENT (AMPERES)
4-180
20
30
2N5883, 2N5884 PNP, 2N5885, 2N5886 NPN
PNP DEVICES
2N5883 and 2N5884
NPN DEVICES
2N5885 and 2N5886
FIGURE 11 - TEMPERATURE COEFFICIENTS
+4.0
II
'-'
t- "Applies for IC/IB < hFE/2
Q
> +3.0
.s
~ +2.0
ffi
~
+1.0
~
w
I
IIIII
I IIII
0:
...
~
...ai
+3.0
I
~
z
+2.0
~
+1.0
:::>
-1.0
./
i,...-
-3.0
0.3
1.0
2.0
3.0
e
S.O 7.0
./
V.
i-"" /
..J....+1"
-"OVC for VCE("t)
/
w
0:
~
:::>
II
II
I IIII
O.S 0.7
II
-550C to +250C
'-'
jstc to t2SOlC -
~.
I
I
+2S oC to +IS00C ./
'-'
..i-
/
VV
+isoc lo +\sJoc
8VB for VBE
-2.0
.§
I
~
III I
III I
III I
"Applies for ICIIB < hFE/2
t-
3;
..vr:
f- "OVC for VCE(sa!)
u
+2S oC to +IS0 0C} ' - - -
-SSoC to +2SoC
U
+4.0
/
I I
I I
10
20
~
-1. 0
ai
t-
-2.0
i
30
--
J I L
8VB for VBE
-3.0
0.3
../
+2S0Ctot~
III
O.S 0.7
2.0
1.0
V
_r'
III
JSo,C jO iiSiC
3.0
S.O 7.0
20
10
30
Ie. COLLECTOR CURRENT (AMPERES)
IC. COLLECTOR CURRENT (AMPERES)
FIGURE 12 - COLLECTOR CUT·OFF REGION
r---- VCE
...~
ffi
:;:
B
0:
e
30 V
10 2
10 1
I==VCE 30V
Y
/
TJ +IS00C
/
:\OOOC
~
+2S 0C'=====
/
=TJ +IS0 0C
I
/
+1000C:: !i+2S0C= =====
1
/
/
10 0
:;;:::::::
~_
10- I-=---
E
10- 2
REVERSE
d==
FORWARD
e
'-'
IC=ICES
10- 3
+0.4
+0.3
+0.2
+0.1
-0.1
-0.2
L
REVERSE
IC iCES
10- 3
-0.3
-0.4
-O.S
+0.6
FORWARO
-0.4
-0.3
-0.2
-0.1
+0.1
+0.2
+0.3
+0.4
+O.S
+0.0
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - EFFECTS OF EXTERNAL BASE·EMITTER RESISTANCE
10 8
,""
7
VCE 30V-
VCE-30V-
""
IC = 10 X ICES
V
""
IC - 10 X ICES
IC 2 x ICES
=
TvpicailCES values obtained
from Figure 12.=
......
IC~ICES'
"\..
cJs
Typicall
==
values obtained IC=2xICES - t- from Figure 12.:
""\..
"\..
f== =IC ~ ICES
10 2
10 2
o
"\..
20
40
60
80
100
120
140
160
180
200
TJ. JUNCTION TEMPERATURE (OC)
o
20
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE (OC)
4-181
160
lBO
200
2N5974,2N5975,2N5976 (SILICON)
PNP SILICON PLASTIC POWER TRANSISTORS
5 AMPERE
POWER TRANSISTORS
designed for use in general purpose amplifier and switching
applications.
PNP SILICON
41>-61>-80 va L TS
75 WATTS
.. DC Current Gain Specified to 5 Amperes
hFE=20·120@IC=2.5Adc
= 7.0 (Min) @ IC = 5.0 AdG
•
•
Coliector·Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5974
= 60 Vdc (Min) - 2N5975
= 80 Vdc (Min) - 2N5976
o High Current Gain - Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc
• Complements to NPN Transistors 2N5977. 2N5978. 2N,5979
'MAXIMUM RATINGS
Symbol
2N5974
2N5975
2N5976
Unit
VeEO
40
60
SO
Vdc
Collector-Base Voltage
Ves
60
SO
100
Vdc
Emitter-Base Voltage
VES
5.0
Vdc
Ie
5.0
10
Adc
Base Current
IS
2.0
Total Power DiSSipation
PD
Rating
Collector-Emitter Voltage
Collector Current - Continuous
Peak
Adc
STYlE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Watts
@Te= 25 0 e
Derate above 25°C
75
0.60
-
Operating and Storage JunctIOn TJ,Tstg.
Temperature Range
-65 to +150
wloe
-
°e
NOTES:
1. DIM "0" UNCONTROLLED IN ZONE "H"
2. DIM "F" DIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEADS WITHIN 0.005" RAD OF TRUE
POSITION (TP) AT MAXIMUM MATERIAL
CONDITION.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
"Indicates JEOEC Registered Data for 2N5974 Series.
FIGURE 1 - POWER DERATING
0
-
D1M
l"-.
0--'
~----
~
"-
._-- - ' -
0
_.
.-
~
r--- --_.
..
-
10
40
60
0
F
G
H
J
K
-_.- 1 - -
~
0-'
o
o
A
B
C
.-
i'-..
M
n
"'- ",,80
100
120
140
R
U
V
160
MILLIMETERS
MAX
MIN
INCHES.
MIN MAX
16.13 16.38
12.57 12.83
3.43
3.18
1.09
1.24
3.51
3.16
4.22 8SC
2.67
2.92
0.813 0.864
15.11 16.38
go TYP
4.70 4.95
1.91
2.16
6.48
6.22
2.03
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSC
0.105 0.115
0.032 0.034
0.595 0.645
90 TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080
CASE 90·05
TQ·127
TC, CASE TEMPERATURE I'C)
4-182
2N5974,2N5975,2N5976
*ELECTRICAL CHARACTERISTICS ITc = 250 C unless otherwise noted)
Characteristic
Svmbol
Min
Max
40
60
80
-
-
1.0
1.0
1.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 100 mAde, IS = 0)
Vde
VCEO(sus)
2N5974
2N5975
2N5976
Collector Cutoff Current
(VCE = 20 Vde, 18 = 0)
(VCE = 30 Vde, IS = 0)
(VCE = 40 Vde, IS = 0)
mAde
ICEO
2N5974
2N5975
2N5976
-
Collector Cutoff Current
ICEX
(VCE = 60 Vde, VE8(off)~' 1.5 Vde)
(VCE = 80 Vde, VEB(o!f) = 1.5 Vde)
(VCE = 100 Vde, VEB(off) = 1.5 Vde)
(VCE = 40 Vde, VEB(o!f) = 1.5 Vde,
TC = 125°C)
(VCE = 60 Vde, VEB(olf) = 1.5 Vde,
TC=1250C)
2N5974
2N5975
2N5976
2N5974
--
-
100
100
100
1.0
2N5975
-
1.0
(VCE = 80 Vde, VEB(off) = 1.5 Vde,
TC = 1250 CI
2N5976
-
1.0
-
1.0
40
20
7.0
120
-
0.6
1.7
-
2.5
,-
1.4
2.0
--
-
300
20
-
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 01
~Ade
mAde
mAde
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC = 0.5 Ade, VCE = 2.0 Vde)
(lc = 2.5 Ade, VCE = 2.0 Vdel
(lc = 5.0 Ade, VCE = 2.0 Vdel
-
hFE
Collector-Emitter Saturation Voltage
(lC = 2.5 Ade, IB = 250 mAde
(lC = 5.0 Ade, IB = 750 mAde
VCE(s.t)
Base-Emitter Saturation Voltage
(lC = 5.0 Ade, IB = 750 mAde)
VBE(satl
Base-Emitter On Voltage
(lC = 2.5 Ade, VCE = 2.0 Vde)
VBE(on)
-
Vde
Vde
Vde
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(IC = 500 mAde, VCE = 10 Vde, f test = 1.0 MHzl
Output Capacitance
(VCB
= 10 Vde,
MHz
fT
pF
Cob
IE = 0,.1
= 0.1 MHz)
Small-Signal Current Gain
(lc = 0.5 Ade, VCE = 4.0 Vde, f = 1.0 kHz)
-
hfe
·Indlcates JEDEC Registered Data
(1) Pulse Test: Pulse WidthS-300 J,l.s. Duty Cycle$2.0%.
12) fT =
I hie I- f test
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
Vee
20
vcTd =~~~c r-
-30V
1.0
o.7
o. 5
SCOPE
Ra
IcllB
--
~ o. 3
w
'"
;=
51
Ir. tf!::10ns
+-40
OUTV CYCLE • 1 0"
RS and
Re VARIED TO OBTAIN
o.2
.......
v
DESIRED CURRENT LEVELS
0, MUST BE FAST RECOVERY TYPE, eg
MBOS30D USED ABOVE 18~ 100 rnA
MSD6100 USED BELOW 18 ..:::100 mA
--,-
I
~
5.0 V
11111
I
ld@ VBE(off)
0.07
0.05
0.0 3
0.02
0.05
--
r- r-i-
"-
O. 1
0.1
0.2
0.3
0.5
1.0
lC, COLLECTOR CURRENT (AMP)
4-183
t=
10
2.0
3.0
5.0
2N5974,2N5975,2N5976
FIGURE 4 - THERMAL RESPONSE
Inn
1.0
ffi
0.7 f:=D 0.5
N,O.5
1-::;
ffi ~ 0.3
pl2
in'"
1==
"';;:;
t----- t- O.l
~ ~ 0.2
1-""
~ ~ O. 11::::=
~ ~ 0.0 71==
•
Plpk)
---
'0.05
1
::--
I--: r,...-~
.
tl~
0.02
:±: ~ 0.05
w-'
OJClmax) - 1.67'CIW
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ(pk)
TC
Plpk) OJC(I)
DUTY CYCLE, D -11/12
:g ~ 0.0 3 t----- rO.Ol
t-Single Pulse
~ 0.02
I-
1
0.0 1
0.01
I
0.02 0.03
0.05
11111 1 111 111 1111
0.1
0.2
0.3
0.5
1.0
2.0
3.0
10
5.0
20
30
50·
I I II 11llll
100
200
300
500
1000
I. TIME OR PULSE WIDTH 1m,)
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
0
--
0
--
01- TJ - 150'C
0
'"o
0
-- ---
~ . O. 5t--I[3
~
0.5 ms
'\,dc
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @TC- 250 C\ \
0,
\
1.Oms
depending on conditions. Second breakdown pulse limits are valid
for dUly cycles 1010% provided TJlpk);> ISo"C. TJ(pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
5.0ms
2N5914
2N5915
2N5916
o1
1.0
10
20
average junction temperature and second breakdown.
Safe operating area curves indicate IC·VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
Thedala of Figure S is based on TJlpkl = IS00 C; TC is variable
Curves Apply Below Rated VCEO
O. 3
O. 2
5.0
There are two limitations on the power handling ability of a
transistor:
30
50
10
100
VCE. COLLECTOR EMITTER VOLTAGE (VOLTSI
FIGURE 6 - TURN·OFF TIME
5. 0
TJ-25'C t VCC - 30 Y-t ICII6 -10
161- 162-t -
3.O
2. 0
~
w
'"~~
O. 3
TJ-25'C.
300
-~
1.O
O. 1
O. 5
FIGURE 7 - CAPACITANCE
500
~ 200
z
~
t3
II
O. 2
It
"" r--
r--!-
~
I-r---
. . . r---"
Cib
~
U 100
O. 1
0.0 1
0.0 5
0.05
r---
r---
r-- ......
10
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT lAMP)
50
0.5
1.0
2.0
3.0
5.0
10
VR, REVERSE VOLTAGE IVOLTS)
4-184
20
30
.50
2N5974,2N5975,2N5976
FIGURE 8 - DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
500
VCE" 2.0 V
300
200
'"'"~
-r-
ffi
;
20
r---.
g
tl
>
0.2
0.5
0.3
2.0
1.0
3.0
o.S
Q
10
0.1
1.2
alc:i:
~
""- r-...I'
§
5.0
0.05
2.5A
~
50
30
I--
-
-
0.4
0
10
5.0
20
50
30
+2.5
TJ = 25 0 e
3:G +2.0
'.
500
1000
'AP;hes
lor IIC/IIB "~FEI/41
..§. +1.5
1. 6
/
!2
'"
~.
G+1.0
~V
L,..,::::::V
Q
2:- 1. 2
w
'"
~
>
300
FIGURE 11 - TEMPERATURE COEFFICIENTS
FIGURE 10 - "ON" VOLTAGES
2.0
'"
200
100
lB. BASE CURRENT (mA)
IC. COLLECTOR CURRENT (AMP)
Q
TJ = 25°C
5.0 A
IC = 1.0 A
Q
-55 0 C
I
II
1.6
w
'" 100
Q
2:-
25 0 C
u
II
Q
ITJ = 150 0 e
z
;C
~
i3
in 2.0
~
t--
O. B
'"~
/
0.1
0.2
0.3
i
I-
o
0.05
a:i
>-
V-
t-- vcL.,!@!c/i B = \0
0.5
1.0
2.0
3.0
j5tC to i250lC
-0.5
'"~ -1.0
V
5.0
<250C to
OVB for VBE
-1.5
-2.0
-2.5
0.05
0.1
0.2
.......V
~ I--'
·Ove for VCE(sat)
'"w
VBE @VCE 4.0 V
0.4
+0.5
o
~ IP
VBE( .. ,)@IC/IB= 10
:>
~
+25 0C to +150 oC V
03
0.5
+115~OC
V
tTr-
-
X
I--'
%
i r-
25 C
2.0
1.0
3.0
5.0
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 12 - COLLECTOR CUT-OFF REGION
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
10 3
10 M
VCE = 30 V
A
TJ=150oC
IC
10XICES_t
_VCE
30 V
IC = 2 X ICES
100°C
1
" ......
/ 25°C
IC = ICES
"-
,.-
""- ..........
Ie = ICES
1
F!== REVERSE
FORWARO=
'-..
=
10-3
+0.3
""-
(Typical ICES Values
Obtained From Figure 121
+0.2
+0.1
-0.1
-0.2
-0.3
-11.4
-0.5
-11.6
0.1 k
20
-0.7
VBE. BASE-EMITTER VOLTAGE (VOLTS)
40
60
80
100
120
TJ. JUNCTION TEMPERATURE (OC)
4-185
140
160
2N5977,2N5978,2N5979 (SILICON)
NPN SILICON PLASTIC POWER TRANSISTORS
5 AMPERE
POWER TRANSISTORS
designed for use in general purpose amplifier and switching
applications.
NPN SILICON
.. DC Current Gain Specified to 5 Amperes
hFE = 20·120@ IC = 2.5 Adc
= 7.0 (Min) @ IC " 5.0 Adc
40·60-80 VOLTS
75 WATTS
o Coliector·Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5977
= 60 Vdc (Min) - 2N5978
= 80 Vdc (Min) - 2N5979
.. High Current Gain - Bandwidth Product
fT = 2.0 MHz (Min) @ IC = 500 mAdc
.. Complement to PNP Transistors 2N5974,2N5975,2N5976
*MAXIMUM RATINGS
2N5977
2N5918
2N5919
VeEO
40
60
80
Vdc
Collector-Base Voltage
Vee
60
80
100
Vdc
Emitter-BaS(: Voltage
VES
5.0
Vdc
Ie
5.0
10
Adc
Base Current
IS
2.0
Total Power Dissipation
@Te = 25 0 e
Derate above 25°C
Po
Rating
Symbol
COllector-Emitter Voltage
Collector Current - Continuous
Peak
Operating
Unit
Adc
Watts
75
0.60
-
and Storage Junction TJ,Tstg
Tem'perature Range
STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
wloe
-65 to +150
---
°e
NOTES:
1. DIM "0" ~NCONTROLLEO IN ZONE "H"
2. DIM ·'F" OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEAOS WITHIN 0005" RAO OF TRUE
POSITION (TP) AT MAXIMUM MATERIAL
CONOITION.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
-Indicates JEDEC Registered Data
FIGURE 1 - POWER DERATING
DIM
80
t--
t'--"
o
o
20
A
",,--
40
8
C
""
60
0
F
'"
80
G
H
'"'" '"
100
120
J
K
M
Q
R
U
V
~
140
160
MILLIMETERS
MAX
MIN
INCHES
MIN
MAX
16.13 16.38
12.57 12.83
3.1B
3.43
1.24
1.09
3.51
3.76
4.22
2.92
2.67
0.813 0.864
15.11 16.38
gOTYP
4.70 4.95
1.91
2.16
6.48
6.22
2.03
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 SSC
0.105 0.115
0.032 0.034
0.595 0.645
go TYP
0.IB5 0.195
0.D75 0.085
0.245 0.255
0.080
sse
eASE 90·05
TO-127
TC. CASE TEMPERATURE IOC)
4-186
2N5977, .2N5978, 2N5979
*ELECTRICAL CHARACTERISTICS (TC" 25°C unlo .. othorwise notedl
Chorootoristic
Symbol
Min
Mo.
40
60
80
-
-
1.0
1.0
1.0
Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (1)
(lC" 100 mAde, IB
= 01
Collector Cutoff Current
'(VCE
(VCE
IVCE
Vde
VCEO(susl
2N5977
2N5978
2N5979
mAde
ICEO
= 20 Vde,IB" 01
= 30 Vde, IS" 01
= 40 Vde,IB = 01
2N5977
2N5978
2N5979
-
-
Collector Cutoff Current
ICEX
IVCE = 60 Vde, VESloll1 = 1.5 Vdcl
IVCE = 80 Vde, VEBloifi = 1.5 Vdel
IVCE = 100 Vde, VEB(olfi = 1.5 Vdel
IVCE = 40 Vde, VEBloffi = 1.5 Vde,
TC" 125 0 CI
IVCE = 60 Vde, VEB(offi " 1.5 Vde,
TC" 1250 CI
IVCE " 80 Vde, VEBloffi " 1.5 Vdc,
TC" 1250 CI
-
2N5977
2N5978
2N5979
2N5977
-
100
100
100
1.0
2N5978
-
1.0
2N5979
-
1.0
-
1.0
40
20
7.0
-
-
Emitter Cutoff Current
,.,.Adc
mAde
mAde
lEBO
IVBE " 5.0 Vde, IC " 01
ON CHARACTERISTICS
DC Current Gain
-
hFE
(lC "0.5 Ade, VCE " 2.0 Vdel
(lC" 2.5 Ade, VCE " 2.0 Vdcl
(lC" 5.0 Adc, VCE " 2.0 Vdel
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltago
(lc
VBElsat)
= 5.0 Ade, IB = 750 mAdel
Base-Emitter On Voltage
IIC" 2.5 Adc, VCE " 2.0 Vdcl
Vde
VCEls.tl
(lC" 2.5 Ade, IB = 250 mAde I
(lC" 5.0 Adc, IB "750 mAdel
120
-
0.6
-
2.5
-
1.4
2.0
-
-
200
20
-
1.7
Vde
Vde
VBElonl
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
(lC" 500 mAde, VCE " 10 Vde, I test
MHz
IT
= 1.0 MHzl
Output Capacitance
pF
Cob
(VCB" 10 Vdc,IE" 0, I" 0.1 MHzl
SmaU-5ignal Current Gain
(lC "0.5 Ade, VCE " 4.0 Vdc, I
-
hie
= 1.0 kHzl
·Indlcates JEDEC Reglstored Data
(1) Pulso Test: Pul50 Width:s'300 Ils, Duty CycleS2.0%.
(2) fT
I
I
= hfe 0 f test
FIGURE 2 - SWITCHING TIME TE'ST CIRCUIT
FIGURE 3 - TURN-ON TIME
2.0
VCC
+30 V
T}=250~
1. O
- t-
Yc9fB-_3~OV= F
=
0.1
0.5
SCOPE
RB
:g
0.3
~
0.2
;::
51
tr. tl:::=:10 0$
DUTY CYCLE ~ 1.0%
........
.......
. . . S'
_
O. 1
r--
r-
..............
td@ VBElom
~
0.D7
0.05
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
5.0 V
t::"
r-
0.03
01 MUST BE FAST RECOVERY TYPE, ego
MBD5300 USED ABOVE IB ~100 mA
'MSD6100 USED BELOW IB ~100 mA
0.02
0.05
0.1
0.2
0.3
0.5
1.0
IC, COLLECTOR CURRENT IAM'PI
4-187
2.0
3.0
5.0
2N5977,2N5978,2N5979
FIGURE 4 - THERMAL RESPONSE
_
1.0
0.1
~
0.5
.... :;
:==0=0.5
ffi ~
O. 3c::=
:i ~
0.2
~ 1.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
.....
3,0 I--- TJ = 150°C
SECOND BREAKOOWN LIMITED
0.5 ms
~ de
I'\.
-::.::- ~~~~~NAGL~\~~T~~IIJ~~TC = 250C\ \
\
1.0 ms
Thedalaof Figure 5 is based on TJ(pk}
c
=
~ 0.5
8
~
I--- I-
for duty cycles to 10% provided T J(pk}";; 150°C. T J(pk} may be
\\.
03
0.2
O. I
5.0
= 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
Curves Apply Below Rated VCEO
7.0
10
2N5911
2N5918
2N5979
20
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be' handled to
values less than the limitations imposed by second breakdown.
5.0ms
T
30
70
50
100
VCE. COLLECTOR EMITTER VOLTAGE iliDLTS)
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN·OFF TIME
30 0
5. 0
2.O
Is
1.0
tVce =30 V
leliB =10 }-}-IBI =IB2
~
.
J
r....... ,....
o.2
l"'"'- t--
«
....
10 0
~
0
~
;:;
........
o. 3
T)25 C - 1--"-
200
oS
'"'-'z
], o.7
:E o. 5
;:::
I I
TJ~250e
3. 0
. Ii'
-
~
'-'
1,..-
u
t-
O
o. 1
0.0 7
0.05
0.05
t-
3O
0.1
0.5
1.0
0.2 0.3
IC. COLLECTOR CURRENT (AMP)
2.0
3.0
5.0
0.5
1.0
2.0
3.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
4-188
20
30
50
2N5977,2N5978,2N5979
FIGURE 8 - DC CURRENT GAIN
-
500
300
TJ = 150'C
100
1
z
~
....
as
~
70
50
'-'
30
B
co
I
100
In
.,
1. S
>
a:
1.1
a,
~
O. 8
~8
o. 4
w
IC = LOA
'"e~
~
r-- I--
~
.......
~
>
1.0
3.0
5.0
u
3;
. tu
U
1.1
--=
VBE("'t)@IC/IB-l0
O.B
JBE
0.4
i i
~ t
VfE
vlE(lu
o
0.05
0.1
0.1
IJ/IB
10
0.3
0.5
~ F""
-
4.01V
1.0
~
~
w
'"
>
>'
.
+2. 0
w
=VCE=30V
101
1---.....
~
-1.0
i
3.0
....
~ 10 I
0:
10 0
~j
10- I
e
'-'
:?
5.0
+150clt!~
-1.5
0VB FOR VBE
-2.0
-2.5
0.05
J
I II
0.1
0.2
0.3
.......
"-
0.5
2.0
1.0
3.0
5.0
=
r J T
IC = 10 x ICES
K
IC
=
2 x ICES
I-- I -
k
IC = ICES
k
IC=ICES
F;;;::
r--..
FORWARO
-D. 1
+0.1 +0.1. +0.3 +0.4 +0.5
VBE. BASE·EMITTER VAOLTAGE (VOLTS)
--
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
10 M
VCE = 30 V=
15°C
-0.2
V
-
-550C to +25 0 C
10UoC
10-2~REVERSE
/
IC. COLLECTOR CURRENT (AMP)
/.
10-3
-0.3
n :.J.--t
'OVC FOR VCE(sat)
·55 0 C to +25 0 C
~
~
1ll
....
/
1.0
7
TJ=150'C
a:
1000
"/
+25 0 C to +150OC
+0. 5
-0. 5
FIGURE 12 - COLLECTOR CUT'()FF REGION
e
500
+1.0
8
10 3
B
300
·~WES FolR IC~IB ~ hlFE/l
IC. COLLECTOR CURRENT (AMP)
j
100
100
50
lB. BASE CURRENT (rnA)
.§ +1. 5
'"z
Cl
'"
30
FIGURE 11 - TEMPERATURE COEFFICIENTS
+J= 15,h
~
10
+1. 5
1.S
2:
5.0A
\ ...
0
10
FIGURE 10 - "ON" VOLTAGES
1.0
"'co~
1.5A
e
10
0.1 0.3
0.5
1.0
IC. COLLECTOR CURRENT (AMP)
T1J5rJ
~
.......
0.1
-If
e
2:
-55'C
7.0
5.0
0.05
II
~
VCE = 1.0 V c---
15'C
~ 20
FIGURE 9 - COLLECTOR SATURATION REGION
1. 0
k
+O.S
+0.7
4-189
i== lTypicallCES V.lues •
!::: •obtaIned from ~igure .11)
0.1 k
20
40
.....
so
80
100
120
TJ. JUNCTION TEMPERATURE (OC)
....
140
lS0
2N5986,2N5987,2N5988 PNP
-2N5989,2N5990,2N5991 NPN
(SILICON)
12 AMPERE
HIGH POWER PLASTIC
COMPLEMENTARY SILICON POWER TRANSISTORS
POWER TRANSISTORS
COMPLEMENTARY SILICON
· .. designed for use in general·purpose amplifier and switching circuits.
40,60, 80 VOLTS
100 WATTS
o Coliector·Base Voltage - VCBO = 60 Vdc - 2N5986. 2N5989
= 80 Vdc - 2N5987. 2N5990
= 100 Vdc - 2N5988. 2N5991
•
• Collector·Emitter Voltage - VCEO
= 40 Vdc - 2N5986. 2N5989
=
60 Vdc - 2N5987. 2N5990
= 80 Vdc - 2N5988. 2N5991
• DC Current Gain hFE = 20·120@ IC = 6.0 Adc
= 7.0 (Min) @ IC· = 12 Adc
o Collector· Emitter Saturation Voltage -;VCE(sat) = 0.7 Vdc (Max) @ IC = 6.0 Adc
"MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emltter·Base Voltage
Symbol
2N5986
2N5989
2N5987
lN5990
2N5988
2N5991
Unit
Ves
60
80
100
Vdc
VCEO
40
60
80
Vdc
VEB
Collector Current - Contmuous
- 'e
Peak
Base Current
Total Power DissipatIon
Derate above 2SoC
@
TC
:=
2SoC
Operating and Storage Junc110n
5.0
Vdc
12
20
Adc
IS
4.0
Adc
Po
100
O.S
Watts
w/oe
TJ. T stg
-65 to +150
°e
STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. 8ASE
Temperature Range
NOTES:
1. DIM ·'0" UNCONTROLLEO IN ZONE "H"
2. DIM "F" OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEAOS WITHIN 0.005" RAG OF TRUE
POSITION (TP) AT MAXIMUM MATERIAL
CONOITION.
THERMAL CHARACTERISTICS
Charactoristic
Ther';nal Resistance. Junction to Case
-Indicates JE DEC Registered Data
FIGURE 1 - POWER DERATING
DIM
100
'"
0
A
B
C
i'..
"-
0
D
F
"-
G
"-
0
H
J
K
"-
M
Q
0
""-
0
10
60
80
100
Te. CASE TEMPERATURE lOCI
120
"
140
R
U
V
MILLIMETERS
MAX
MIN
INCHES
MIN
MAX
16.13 16.38 0.635 0.645
12.57 12.83 0.495 0.505
3.18
3.43
0.125 0.135
1.09
1.24
0.043 0.049
3.51
3.76
0.138 0.148
4.22 BSC
0.166 BSC
2.61
2.92
0.105 0.115
0.813 0.864 0.032 0.034
15.11 16.38
0.595 0.645
90 TYP
90 TYP
4.70
4.95
0.185 0.195
1.91
2.16
0.015 0.085
6.22
6.48
0.245 0.255
2.03
0.080
160
4-190
CASE 90·05
TO·127
2N5986, 2N5987, 2N5988 PNP /21\15989, 2N5990, 2N5991 NPN
*ElECTRICAl CHARACTERISTICS (TC: 2SoC unlessolherwise nOledl
Charcctoristic
Symbol
Min
Max
40
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Vde
aVCEO(susl
(lc : 0.2 Ade, la : 01
2NS986, 2N5989
2N 5987, 2N 5990
2N5988, 2N5991
Collector Cutoff Current
(VCE : 20 Vde, 'a: 01
(VCE : 30 Vde, Ie : 01
(VCE : 40 Vde, la: 0)
60
80
mAde
ICED
-
2N5986,2N5989
2N5987,2N5990
2N5988,2N5991
-
Collector Cutoff Current
(VCE = 60 Vde, VaE(off) : 1.5 Vdel
(VCE : 80 Vde, VSE (offl = 1.5 Vdel
(VCE: 100 Vde, VSE(off) : 1.5 Vdel
(VCE: 40 Vde, VSE(off) = 1.5 Vde, TC: 125°C)
(VCE : 60 Vdc, VSE(off) = 1.5 Vde, TC: 12SoCI
(VCE : 80 Vdc, VSE(off) : 1.5 Vde, TC: 125°C)
2.0
2.0
2.0
/lAde
'CEX
-
2N5986,2N5989
2N59S7,2N5990
2N5988,2N5991
2N5986, 2N5989
2N5987,2N5990
2NS988, 2N 5991 •
-
200
200
200
2.0
2.0
2.0
-
1.0
40
20
7.0
120
-
0.7
1.7
-
-
Emitter Cutoff Current
~mAdc
mAde
'EaD
(VSE : 5.0 Vde, IC = 01
ON CHARACTERISTICS
DC Current Gain
-
hFE
(lC: 1.5 Ade, VCE = 2.0 Vde)
(lc : 6.0 Ade, VCE : 2.0 Vdcl
(lc: 12 Ado, VCE : 2.0 Vde)
COllector·Emitter Saturation Voltage
Vdc
VCE(sa,)
(lC: 6.0 Ade, IS: 0.6 Ade)
(lC: 12 Ado, la: 1.8 Adel
Base-Emitter Saturation Voltage
,.
Vdc
VaE(sa!)
(lc = 12 Adc, IS ~ 1.8 Adcf
Base-Emitter On Voltage
-
2.5
-
1.4
2.0
-
-
500
300
20
-
Vde
VaE(onl
(lC : 6.0 Adc, VCE : 2.0 Vdel
DYNAMIC CHARACTERISTICS
Current-Gain - BandWIdth Product
(lC: 0.5 Ade, VCE: 10 Vde, f tcst : 1.0 MHzl
Output Capacitance
(VCS: 10 Vdc, 'E: 0, f: 1.0 MHzl
pF
Cob
2N5986 thru 2N5988
2N5989 thru 2N5991
Small-Signal Current Gain
(lC : 2.0 Ade, VCE : 4.0 Vde, f
MHz
fT
-
hfe
= 1.0 kHz)
-Indicates JEOEC Registered Datil.
(1) fT:::; Ihfel· f test
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - TURN·ON TIME
2.0
VCC
+30 V
vUJJJ
1.0
IC=101~=
TJ· 25"C-
0.5
SCOPE
~
w
:;
;::
0.2
:-...
~
t r.lf-:;:10ns
DUTY CYCLE' 1.0%
RS and
0.1
Re VA.RIED TO OBTAIN DESIRED CURRENT lEVelS
I,
--
Id@l VBE(off) ~ 5.0 V
2N598612N5988
5
'--T-11 2i j8f'fj5991
0.02
0.2
For PNP test circuit reverse diode and voltage polarities.
0.5
1.0
-~
2.0
...
5.0
Ie, COLLECTOR CURRENT (AMP)
4-191
=
~~
...... ::-::::;:-
0.05
0, MUST BE FAST ReCOVERY TVPE,eg
MBD5300 USED ABOVE '0 ..,..100 rnA
MSDlil00 USEO BELOW IS """100 mA
=
-
10
20
2N5986, 2N5987, 2N5988 PNP / 2N5989, 2N5990, 2N5991 NPN
FIGURE 4 - THERMAL RESPONSE
w
'"
~
t;;
ffi
~c
~~
1.0
o.7
o.5
0=0.5
0.3
O.2
0.2
--
0.1
~;;(
O. 1
0.05
~ 0.07
>~ 0.05 0.02.......
t-
wO
•
i
w
-
? 'J-."
0.03
0.02
,.............
0.0 1
0.01
"'-
0.02
-
-,............. --=
t:::; ~
I-'"
::;;.
.01
I I
rriWii
0.05
0.1
0.2
0.5
2.0
1.0
fnn
~I~
5.0
OJC!t) = r(l) OJC
OJC = 1.250C/I'I Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATIJ
TJ(pk) - TC = P(pk) OJC!t)
DUTY CYCLE. O· 11/12
IIII
I
I I I IIIII
20
50
100
10
I
I
200
I I I I
500
1000
I.TIME(ms)
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
li:
o-----I-f--
~
~
~~
~
~
~
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
d;~I\~'O ms
5.0
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
\
2.0
TJ"'150DC
\
[\\
Curv.. Apply Belo;" Rated CEO
\ \
'
'SECOND BREAKDOWN LIMITED
- BONOING WIRE LIMITED
.
~ 0.5 -- - - - - - THERMAL L1MITATlON@TC=250C
= 1.0 - 8
5.0ms
1\
The data of Figure 5 is based on T J(pk) = 150°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles 10 10% provided T J(pk) .;; 150°C T J(pk) may be
calculated from the data in Figure 4. At high case temperatures,
1\
1---t--Ir-+-+-H+~~~mJ~m~ -\.
0.2~=~t=11j~p
IJjltt~2N~59~88~.2~N~59~9~1!!~ew
1.0
2.0
5.0
10
20
50
thermal limitations will reduce the power that can-be handled to
values less than the limitations imposed by second breakdown.
100
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI
FIGURE 6 - TURN·OFF TIME
FIGURE 7 - CAPACITANCE
5.0
1000
2.0 ~
-
--
~~
1.0
:!
w
VCC-lOV 181=IB2 IC = 10 18
r-TJ = 25°C
"~
z
;:'"
-!!..
'".,
0.1
300
L;
..
'"
--
--
0.2
500
w
0.5
;::
TJ = 250C-
700
.; 200
1.0
2.0
-- .....::
"-
....
~
r--,
Cib
t--~
i"i
- - - - 2N5986/2N5988
2N598612N5988
0.5
...
~
1= -----2N598912N5991
0.05
0.2
..:::.......
5.0
10
20
IC. COLLECTOR CURRENT (AMP)
4-192
100
0.5
1~11-2N59rNr
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
...........
Cob
........
~ i'-..
.....
20
.~
50
2N5986, 2N5987, 2N5988 PNP / 2N5989, 2N5990, 2N5991 NPN
NPN
2N5989 thru 2N5991
PNP
2N5986 thru 2N5988
FIGURE 8 - DC CURRENT GAIN
300
1000
II
200
z 150
t-
;;:
"
iii
~ 70
z
::l
I
- ... '"
I
0.3
0.5
2.0
1.0
'"'~
50
-55°C
0
3.0
5.0
r-..
10
20
10
!:lc
2
w
'"~
2.0
0.5
0.2
6.0A
12 A
2
w
'"
«
~
'"
~
-
1.2
~
:ii
~
0
30
~_
-
~-
W
'"'
1.6
100
200
300
500
0.8
\
'\
~
0
30
2000 3000
50
-f-
\
0.4
8
1000
TJ = 25°C
1.2
>
50
12A
6.0 A
c
8
>
1T
1
IC = 3.0 A
:ii
"! 0.8
0.4
20
10
~
'"
12
'"'j
"'
!:lc
TJ=250C
c
~
5.0
IC. COLLECTOR CURRENT (AMPI
,
III
1.6
2.0
1.0
FIGURE 9 - COLLECTOR SATURATION REGION
_ 2.0
IC =3.0 A
~
I'r-.
0
IC. COLLECTOR CURRENT (AMPI
_
I'--
'"
~
20
2:t'
100
::>
....... ;::..
-55°C
30
IZ
......
VCE=2.OV
I
200
'"
-f-.
T~ ~ 1500h
30 0
;;:
~50C
'"'
c 50
15
0.2
500
VCE = 2.0 V
'l...
13
~
I I
II
TJ=+1500C
r-
~ 100
I
70
100
200
300
500
2000 3000
1000
lB. BASE CURRENT (mAl
lB. BASE CURRENT (mAl
FIGURE 10 '- "ON" VOLTAGES
2.0
2.0
TJ= 25°C
TJ = 25°C
s
I..
1.6
~V'
w
g
s
I;
o
21.2
'"~
1.6
VBE(satJ@IC/IB= 10
0.8
~
i..-
o
II
w
'"~
«
=!=FI---
,;
c
o
0.2
0.3
0.5
i"ir
..--
0.4
I IIJ I
V
2.0 3.0
5.0
1.0
IC. COLLECTOR CURRENT (AMP)
I:;:::~
I
VBE!on) @~CE = 2;0 VI
>
I IJc~lsat) @IC/IB = 10
I I
V8E!sat)@ICII8= 10 i--
0.8
,;
VBE(onl@VCE" 2.0 V
0.4
~
1.2
2
~ I )1
10-
-10
1IIIICf(satJi~
10
20
0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC. COLLECTOR CURRENT (AMP)
4-193
10
20
2N5~86,
2N5987, 2N5988 PNP/2N5989, 2N5990, 2N5991 NPN
PNP
NPN
2N5986 thru 2N5988
2N5989 thru 2N5991
I
FIGURE 11 - TEMPERATURE COEFFICIENTS
2.0
1.6
1.2
I-
:Ii
u
~
O.B
0.4
o
r-
I
I I I I I '~.
"Applied lor ICIIB <;; ~
5
I
"OVelfor JcEI(..!)
-
w
•
-0.4
ffi
-0.8
~l -
-1.2
~
i
-1.6
~
I I I
250C to 150 0C
......
i.::=~
~
OVB for VBE
8
I{/
V
!S
V
'"":55~:~
'-'
'":::>
I
25 0C to 1500C
V. .
0.3
0.5 0.7
1.0
+ '1i
1.0 1-+--1-+-++.1 1t-l+ --t--!b:l-:-l=;I;;--t-+:7ftt--+-J
1 1 11
-~5 to +1500 C
j,
0.5
"OV~ f~~ V'C~(~t) l--+--+--H1-t-:~L"Pf.d+I~Vf-t--l
~~~FH##t+I-!~~
~ -0.5 HH----1--l-t-H-tt_+_25t-0_Ct-t0-t'5_0-j°~H"""-t:¥t-ttV"T"+--j
-55 0C to 250C
!!'_~
-1.0 I--jI-+---1H-+++++_+_-t=5:..5f=t0-t~5:.....
o-,,!C,i7'i
..... Q--t.I'ft-+-l
OVB for VBE
.....
~:> f-blJ:l:~~'~'~~;~~-::~~i~:+~~~~~+==~~
-1.5
-2.0
:t
-2.0
0.2
I
2.5
II . I I II I.ll
2.0 -"ApPIo"forIC/lB<;;~-I--+-H-HH--t-I-H,-r
,-t--i
1.5
' ) ""
25 to 1500C
1/
G
~
.§
2.0
3.0
5.0
7.0
20
10
... - 2.5 L..l-*"-J......,L,-LI.,.,iJ..'-:':----'--::-'::-'--::'::---''-:'::--'-=':::L..L:'::----''--:!
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 12 - COLLECTOR CUTOFF REGION
103
:;:
10 2
.:;
~
'"'"
=>
'-'
'"
0
103
VCE' 30 V
r-- VCE' 30 V
:;:
---:; io"-100oC --, "--250C
t::::-TJ"50 0C
10 1
102
.:;
I-
,
:Ii
a:
'"::>
100
'-'
a:
'-'
~
S
<} 10- 1
<} 10-2
IC -ICES
10- 1
10- 3 1
+11.4
+11.2
lO-
Ic -ICES
'~ REVERSE ~ =t::FORWARO
lor
FOR~ARO
REVjRSE
+11.3
25°C
100
0
I-
~<=>
TJ' 150 0C ~ ~ -100oC
10 1
+11.1
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
10- 3
-0.2
-0.1
VBE. BASE·EMITTER VOLTAGE (VOLTS'
+0.1
+0.2
+0.3
+0.4
+0.5
VBE. BASE·EMITTER VOLTAGE (VOLTS'
FIGURE 13 - EFFECTS OF EXTERNAL BASE·EMITTER RESISTANCE
10 7
.'\.
'"
......
"
VCE' 30 V-
r.....
......
.......
"-
r-....
lC ~ ICES
lC' 10ICES_
BO
..........
........
r-...
-
VCE' 30 V'C'5ICES'
..........
........
.......
,
p....; -IC' 2 IcES' 120
140
.......
f-,
160
TJ. JUNCTION TEMPERATURE (DC'
~EE F,'GU,E 12.,
40
60
........
........
,
80
100
120
TJ. JUNCTION TEMPERATURE (DC'
4-194
........
I-I--
IC ~ 'CES
F= FOR TYPICAL ICES VALUES
10 2
20
-
.... 'C·2ICES
........
.........
.........
.........
100
.....,.
........
FOR TYPICAL ICES VALUES
, SEF FI~URE1'2. L
60
-
.......
.......
.......
40
-
140
160
2N6034? 2N6035, 2N6036 PNP
2N60l1? 2~60389 2N6039 NPN
(SILICON)
PLASTIC DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
DARLINGTON
4-AMPERE
... designed for general·purpose amplifier and low·speed switching
applications.
.. High DC Current Gain hFE = 2000 (Typ) @ IC
COMPLEMENTARY SILICON
POWER TRANSISTORS
= 2.0 Adc
40, 60, 80 VOLTS
40WATTS '
.. Coliector·Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 40 Vdc (Min) - 2N6034, 2N6037
= 60 Vdc (Min) - 2N6035, 2N6038
= 80 Vdc (Min) - 2N6036, 2N6039
o Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
o Monolithic Construction with Built·ln Base·Emitter
Resistors to Limit Leakage Multiplication
o Space·Saving High Performance·to·Cost Ratio
TO·126 Plastic Package
"MAXIMUM RATINGS
Rating
Symbol
COllector-Emitter Voltage
VCEO
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current
Continuous
Peak
2N6034 2N6035 2N6036
2N6037 2N6038 2N6039
40
60
80
40
80
60
5.u_
.
4.08.0-
IC
Base Current
.
10040
PD
-0.321.5PD
-0.012-65'0+150TJ,T st9
IB
Total Power DisSipation @TC - 2SoC
Derate above 25°C
Total Power DISSipation @ T A == 2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction to Ambient
-"" l~
i;.
"-
z
0
>=
it
~ 2.0
-
20
C
...;:'"
~
~
to
o
..............
10
0
o
20
~+··r;tF
~~t
:: + ;:
II
mAde
Watts
~~
~H
wf'c
Watts
wf'c
°c
II
~lJ.l
40
t
00
"
........
DIM
A
B
C
D
F
G
H
TC
'"
~
~
J
"'-" "'-r-::
10~
~
~'f
K
L-lLJ
STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3 BASE
NOTES
I. MT ~ MAIN TERMINAL
2. LEADS. TRUE POSITIONED
WITHIN 0.25 mm 10.010) DlA.
TO DIM. ··A·· & ··B·· AT
MAXIMUM MATERIAL
CONDITION.
FIGURE 1 - POWER DERATING
!;{ 3.0 30
Vde
Ade
E3_
1
M--il-
*Indicates JEDEC Registered Data.
~
Vde
;-G
Characteristic
Thermal Resistance, Junction to Case
4.0 40
Vde
~D
THERMAL CHARACTERISTICS
TA TC
Unit
IW
K
M
n
R
S
U
~
140
160
V
MILLIMETERS
MIN
MAX
10 80
7.49
2.41
051
2.92
2.31
1.27
0.38
15.11
11.05
7.75
2.67
0.66
318
2.46
2.41
0.64
16.64
30 TYP
401
140
0.64
0.89
3.94
3.68
1.02
3.76
1.14
INCHES
MIN
MAX
0.425 0.435
0.295 0.305
0095 0.105
0.020 0.026
0.115 0125
0.091 0.097
0.050 0.095
0.015 0025
0.595 0.655
30 TYP'
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
CASE 77·04
TO·126
T, TEMPERATURE (DC)
4-195
2N6034, 2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN
'ELECTRICAL CHARACTERISTICS IT C: 25°C unloss o,he,wose no,ed)
I
Min
Max
40
60
SO
-
-
-
100
100
100
2N6034, 2N6037
2N6035, 2N6038
2N6036, 2N6039
-
100
100
100
2N6034, 2N6037
-
500
2N6035, 2N603S
-
500
2N6036, 2N6039
-
500
-
-
-
0.5
0.5
0.5
-
2.0
500
750
100
15,000
Characteristic
Symbol
Unit
OFF CHARACTERISTICS
Collector·Emltter Sustaining Vortage
IIC
= 100 mAde,
IS
= 0)
Collector-Cutoff Current
(VCE = 40 Vde, IS = a)
(VCE = 60 Vde, Is = a)
(VCE = SO Vde, IS = a)
•
2N6034,2N6037
2N6035, 2N603S
2N6036, 2N6039
ICEX
Collector Cutoff Current
2N6034, 2N6037
2N6035, 2N6038
2N6036, 2N6039
Emitter Cutoff Current
IESO
(VSE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
~A
mAde
hFE
(lC = 0.5 Ade, VCE = 3.0 Vde)
(lC = 2.0 Ade, VCE = 3.0 Vde)
(lC = 4.0 Ade, VCE = 3.0 Vde)
COllector-Emitter Saturation Voltage
i
mAde
-
-
Vde
VCE(sa')
-
(lC = 2.0 Ade, IS = 8.0 mAde)
(lC = 4.0 Ade, IS = 40 mAde)
Base-Emitter Saturation Voltage
= 4.0 Ade,IS
~A
ICSO
(VCS = 40 Vde,IE = 0)
(VCS = 60 Vde, IE = a)
(VCS = 80 Vde,IE = 0)
(lC
-
ICED
Collector Cutoff Current
(VCE = 40 Vde, VSE(oll) = 1.5 Vde)
(VCE = 60 Vde, VSElolf) = 1.5 Vde)
(VCE = SO Vde, VSE(off) = 1.5 Vde)
(VCE = 40 Vde, VSE(off) = 1.5 Vde
TC = 125°C)
(VCE = 60 Vde, VSE(off) = 1.5 Vdc
TC = 125°C)
(VCE = SO Vde, VSE(off) = 1.5 Vdc
TC = 125°C)
Vde
VCEOlsus)
2N6034, 2N6037
2N6035, 2N603S
2N6036,2N6039
-
2.0
3.0
VBElsatl
-
4.0
Vde
VBElon)
-
2.S
Vde
= 40 mAdcl
Base-Emitter On Voltage
(lC = 2.0 Ade, VCE = 3.0 Vdcl
DYNAMIC CHARACTERISTICS
Small-Signal Current-Gain
lic = 0.75 Ade, VCE = 10 Vde, f = 1.0 MHz)
Ihlel
Output Capacitance
1.0
.
-
-
pF
Cob
-
(VCS = 10 Vde,lE =0, I = 0,1 MHz) 2N6034, 2N6035, 2N6036
2N6037, 2N603S, 2N6039
200
100
-
* Indicates JEOEC Registered Data.
FIGURE 3 - SWITCHING TIMES
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
4.
Vee
-3UV
RB & Re VARIED TO OBTAIN DESIRED CURRENT LEVElS
01. MUST BE FAST RECOVERY TYPES. e.g ..
MBD5300 USED ABOVE IB "'" 100 mA
MS06100 USED BElOW 18 "'" 100 rnA
Re
v,
'~f;O~--I'
I
tr.tf< IOns
~UTY
CYCLE
=
1.0%
~ 1.0
>= O.S
,C><.
O. 6
2•• _
for tdend t •• 01 IS disconnected
end V2 '" D, liB and Re afe vafllNf
to obtain desired test currents.
0.4
For NPNtesl:circuit,reversediode.
palaritiesand input pulses
O.2
tl~
~.;;:>
~
/< ~ l'... ..... 1---"1--
~
~
Vee =30V
=250 ...c. I lSI = IS2
TJ =25·C
Iclls
"- '\
2.0
SCOPE
V2
~D: __________
'PP'"'--J----1-
\',
?
0.04
V
.........
---PNP
---NPN
0.1
0.06
.....
-
..........
0.2
~tl
t,
...
r-... ~ ....
0.4
0.6
"
-
7'
r@~7)=011.0
IC, COLLECTOR CURRENT (AMP)
4-196
.......
~
...
-,
c::::: 1-_ t_
2.0
4.0
2N6034, 2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN
FIGURE 4 - THERMAL RESPONSE
1.0
~
'"
~ 1.Ok
~
V
V
j5 0 C
6.0k
-,..-
-....
V
r\~
z
~
....
\\
~ 1.Ok 1/
:5
800
~ 600
I\,
i/
400
300
0.04
0.06
0.1
/
400
0.2
0.4
0.6
1.0
IC. COLLECTOR CURRENT lAMP)
300
0.04
4.0
.2.0
//
-55 0 C
W
60 0
~
.25 0 C . /
YT
'"
'"
~ 800
-
.......
;"
2.0k
ffi
1\ ~
"~
"~~
/
3.0k
VCP 3.0 V
i'...
./
4.0 k
............
~
,/
TJ = 125°C
VCE = 3.0 V-
0.06
0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT lAMP)
0.1
4.0
2.0
FIGURE 9 - COLLECTOR SATURATION REGION
en
:;
3. 4
o
~ 3.0
'"
«
~ 2. 6
o
I
I
I
I
II
II
IC
0.5A
1.0A
~ 3.4
II
II
II
2.0A
TJ = 25°C
o
2. 3.0
w
II
II
II
IC 0.5 A
'"
4.0A
1.0A
~ 2.6
I
I I
I I
2.0A
TJ = 25°C
4.0 A
o
>
>
~ 2.2
ffi 2.2
....
~
;E
~
~ 1. 8
Ii
o
o
....
~ 1.4
1.8
~
1.4
8
1.0
...J
o
~ 1.0
r--\--
,
..........
W
<.>
> 0.6
0.1
<.>
0.2
0.5
1.0' 2.0
5.0
10
20
50
100
> 0.6
0.1
0.2
0.5
1.0
lB. BASE CURRENT ImA)
2.0
5.0
10
lB. BASE CURRENT ImA)
50
20
100
FIGURE 10 - "ON" VOLTAGES
2. 2
2.2
L II
L
/"
TJ = 25°C
1.8
~
o
I "
VBElsa!) @ lellB
2. 1.4
~
I-
I "~IICIIB - 250
41- VB Elsa:)
./
....- "
VCElsa~) @ Ichs =1 250
V
0
I II
-vJEi..:)
o. 6
O. 2
0.04
I "
TJ = 25°C
1.8
I-"'"
VSE @VCE 3.0 V
I
1.0
>'
250
I
w
'"
~
....... V V
"
,..-
I.-
VBE@VCE=3.0V
<
I
~IIC/IB ! 25J
V
/
i/
f--'
O.6
0.06
0.1
0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT lAMP)
2.0
O.2
0.04 0.06
4.0
4-198
0.1
0.4 0.6
1.0
0.2
IC. COLLECTOR CURRENT lAMP)
2.0
4.0
2N6034, 2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN
NPN
PNP
2N6D37,2N6038,2N6039
2N6D34,2N6D35,2N6036
FIGURE 11 -- TEMPERATURE COEFFICIENCTS
+0.8
u
~:E~ ~6R-;I;;-~'~;E/3
I-
~
t
r-0.8 r-
U
~
8
--
~
3;
.§
---
!
-1.6
~
c - - f--- 1--I--
·OVC for VCE(lat)
- ._- ---
-550C to 25°C
~ -2.4
:::>
rrftol50ob
I--
I-
«
~
-4. o -OV8 for VBE
LlJ
0.06
0.1
riOT
1025O~
IIII
ffi -0.81-u
§ -1.61--
~
7
~~
~
.-
/
~
-4. 0
I
III I
O.OS
0.1
/
"" V
1°,1~ .-V
-550C to 250C
I
II I
I
I II
t
2,5 01C
-550C to 25°C
I
-4. 8
0.04
~
~
J..H1l
OVC for VBE
~
/
2150lC 1011~~
-, r I
~ -3. 2
4.0
17
I-
I-H~
~
2.0
--
I
:::>
l - i--
-I-~
--
+--- -
-2.4 f--- ·OVC for VCE(sat!
I--
8
I
0.4 O.S
1.0
0.2
Ic, COLLECTOR CURRENT (AMP)
--
0
on
...H"J..l...-'
~
-4. 8
0.04
P
·APPLIED FOR IC/IB < hFE/3
U
>
.§
!?.
IJ....-"""I~
~ -3. 2
I-
+0. 8
I r---j
I
/
/
1II1
1III
IIIII
0.4 O.S
0.2
1.0
Ic, COLLECTOR CURRENT (AMP)
2.0
4.0
FfGURE 12 - COLLECTOR CUT-OFF REGION
10 5
105
4 F!==REVERSE= ~FORWARD
«
10
~
10 3 = VCE"30V
.:;
./'
«.:;
I-
~co
co
G
co
o
§
_
G
10 2
co
0
10 I
8
~ 10 0
~
8
--TJ 150°C
-
100°C
-
25°C
10- I
+O.S
,/
~
10 4
10 3
102
=REVERSE= =FORWARO
/
F
=VCE"30V
I- TJ
-
150°C
10 1
f----- 100 0e
10 0
F=
25°C
10- 1
'0.4
0.2
-0.2
-0.4
-O.S
-O.B
-1.0
-1.2
-1. 4
-0.6
-0.4
-0.2
+0.2
+0.4
+O.S
+0.8
+1.0
V8E, BASE EMITTER VOLTAGE (VOLTS)
VBE, BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - OARLINGTON SCHEMATIC
PNP
2NS034
2NS035
2NS036
Base
Collector
NPN
2NS037
2NS038
2NS039
---,
.-------+-.., ,
r-----I
I
I
Collector
---,
. - - -........~
I
I
I
I
I
I
I
I
I
I
I
I
I
Base
I
I
I
I
I
1L....w-.
.......
L ___
_-'VV'V--4-....J
_ _ _ _ _ .JI
I'-'w-.
.......
L ___
_-'VV'V-+-'
_ _ _ _ _ .JI
Emitter
Emlt:er
4-199
+1.2
+1.4
•
2N6040 thru 2N6042 PNP (SILICON)
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
DARLINGTON
8AMPERE
_ .. designed for general· purpose amplifier and low·speed switching
applications.
• High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
•
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 va L TS
75 WATTS
•
Coliector·Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - 2N6040. 2N6043
= 80 Vdc (Min) - 2N6041. 2N6044
= 100 Vdc (Min) - 2N6042. 2N6045
•
Low Collector-Emitter Saturation Voltage - III
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41.2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042. 2N6045
•
(1)
2N6040
thru
2N6045
Monolithic Construction with Built-In Base-Emitter
Shunt Resistors
(1) Applies to corresponding in-house part
n~mbers
also.
"MAXIMUM RATINGS
2N6040
2N6043
MJE6040
Symbol MJE6043
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous
Peak
Base Current
2N6042
2N6045
MJE6042
MJE6045
Unit
80
80
100
100
Vdc
Vdc
60
VeEO
VeB
VEB
Ie
Collector-Base Voltage
2N6041
2N6044
MJE6041
MJE6044
...
60
5.0
8.0
16
-120
.
..
lB
..
..•
•
Total Power Dissipation @TC
Derate above 2SoC
25 0 e
Po
75
-0.60
Total Power Dissipation
Derate above 2SoC
25 0 e
Po
2.2
_0.0175_
@
TA
Operating and Storage Junction,
Temperature Range
.
•
-
TJ. TS19
-65to+150_
Vdc
Adc
STVLE1
PINI
2
l
BASE
COLLECTOR
EMITTER
4
COLLECTOR
mAde
Watts
w/oe
NOTE
1 DIM l&HAPPLlES
TO ALL LEADS
Watts
w/oe
°c
CASE 221A-4)Z
TD-220A8
THERMAL CHARACTERISTICS
MJE6040
Characteristic
\~-
thru
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*Indicates JEDEC Registered Data
FIGURE 1 - POWER DERATING
TA Te
4.0 80
NOTES
1 mM"O"UJilCONTROLLEOINZOJilE"H"
2 OIM"F"OIATHRU
l HEATSINICCONTACTAIIEA!80rrOMI
4 LEAOSWlTHIJilOD05"IIAOOFTRUE
POSlTlONITPI AT MAXIMU".MATEIiIAL
CONDITION
""-
0
"
0
'IN1EMITTEIi
STYLE 2 2COLLECTOII
38ASE
TC
""-
~
TA .........
0
0
20
40
60
""
........
80
"'"
~~~~~~~~
'-..... ~
100
~~
120
140
160
T. TEMPERATURE I'CI
4-200
CASE ....
2N6040 thru 2N6042 PNP
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN
-ELECTRICAL CHARACTERISTICS ITC
I
= 2S DC unless Dtherwl~ notedl
Mon
Symbol
CharactellstlC
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
lie'" 100 mAde, IB '" 0)
Collector Cutoff Current
(VeE" 60 Vdc, IS .. 01
(VeE" BO Vdc, IS .. 01
(VeE" 100 Vdc, Ie .. 0)
VO<
VCEOlsusl
2N6D40, 2N6043, MJE6040. MJE6043
2NG041. 2N6044, MJE6041. MJE6044
2N6042, 2N6045, MJE6042, MJE6045
60
80
100
ICED
20
20
20
2N6D40, 2N6043, MJE6040. MJE6043
2N6041, 2N6044, MJE6041, MJE6044
2N6042, 2N6045. MJE6042, MJE6045
Collector Cutoff Current
(VeE = 60 Vdc, VBE(offl '" 1.5 Vdc)
(VeE = so Vdc, VSEtoffl = 1.5 Vdc)
(VeE'" 100 Vdc, vSEloffl'" 1.5 Vdcl
(VeE = 60 Vdc, VBE(off! = 1.5 Vdc,
Tc" 1SOoC)
(VeE = 80 Vdc, VaE (off) " 1.5 Vdc,
TC -l50oCI
(VCE = 100 Vdc, VSEloff)" 1.5 Vde,
Tr.:" ,50oel
Collector Cutoff Current
(Vca '" 60 Vdc. IE = 01
(VCS" 80 Vdc, IE '" 01
(Vca = 100 Vde, IE '" 01
ICEX
2N6040, 2N6043, MJE6040, MJE6043
'2N6041. 2N6044, MJE6041, MJE6044
2N6042. 2N6045, MJE6042. MJE6045
20
20
20
2N6040, 2N6043, MJE6040, MJE6043
200
2N6041, 2N6044. MJE6041. MJE6044
200
•
200
2N6042. 2N6045. MJE6042, MJE6045
_A
ICSO
2~6040, 2N6043, MJE6040, MJE6043
2N6041, 2N6044. MJE6041, MJE6044
2N6042. 2N6045, MJE6042. MJE6045
Emitter Cutoff Current
(VSE = 5 a Vdc, IC = 01
20
20
20
mAde
lEBO
20
ON CHARACTERISTICS
DC Current Gam
(lC = 4.0 Adc, VCE" 4.0 Vdc) 2N6040,41. 2N6043,44. MJE6040,41. MJE6043,44
tiC = 3 a Ade, VCE '" 4.0 Vdc) 2N6042. 2N6045, MJE6042. MJE6045
(Il' = 8 0 Ade. Vl'r:. ,. 4.0 Vdc) All Tvoes
10,000
10,000
1000
1000
100
Collector-Emitter Saturation Voltage
(Ie = 4.0 Adc. IS = 16 mAdel 2N6040,41.2N6043,44.MJE6040,41,MJE6043.44_
(lc = 3 0 Adc. la '" 12 mAde) 2N6042,2N6045.MJE6042,MJE6045
IIC = 80 Adc. IB" 80 mAdel All Types
VCE(5at!
Base-Emitter Saturation Voltage
(Ie = 80 Ade, 18 = 80 mAde)
VaElsat}
Base-Emitter On Voltage
lie = 4.0 Adc, VCE = 4.0 Vdc)
VSE(onl
Vo<
2.0
2.0
4.0
Vd,
4.5
VO<
2.8
DYNAMIC CHARACTERISTICS
SmaUoSignalCurrentGain
(lc = 3.0 Ade, VeE = 4.0 Vdc. f = 1.0 MHz)
Output Capacitance
{VCS = 10 Vdc, IE "0, f '" 0.1 MHz}
4.0
pF
2N6040/2N6042, MJE6040/MJE6042
2N6043I2N6045, MJE6043/MJE6045
300
200
h,.
. Small'SIgnal Current Gam
(IC = 3.0 Adc, VeE = 4.0 Vdc, f = 1.0 kHz)
300
·Indlcates JEDEC Registered Data
FIGURE 3 - SWITCHING TIMES
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
5. 0
3.
Vee
-30V
H6 & Ae VARIED TO OBTAIN DESIRED CURRENT lEVELS
01, MUST BE FAST RECOVERY TYPES, e.g.,
MBD5300 USED ABOVE 18 '" 100 rnA
MSD6100 USED aElOWIS '" 100 rnA
~
O~
2.0t'
Re
TUT
0
SCOPE
''''"'--J-----1- ~
v,
'~~;O~_:I
I
t r.tf.r;;;;10ns
DUTY CYCLE,: 1 0%
51
p.--
,r--...
I-
'I
7
r------~
+8.0V _ _ _ _ _ _ _ _ _ _
O
f--
'.1 .....
o.
I:
5
3
--
_
t-.
O.If- Vce = 30 V
t-ICIlB = 250
_:..J
o. 1I=W==2~%~-
fortd and tr,D, is disconnected
and V2"0
For NPN test Circuit reverse all polartties and 01.
F
0.07
0.05
0.1
'd@VBE(oill =0
If·
'-
-
?->
PNP
NPN
0.2
0.3
0.5 0.7
1.0
2.0
3.0
IC, COLLECTOR CURRENT (AMP)
4-201
-,
ts.o
7.0
10
2N6040 thru 2N6042 PNP
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN
FIGURE 4 - THERMAL RESPONSE
-
1.0
C
o. 7~D
~
0.5
.... ::;
0.2
.... w
f-- 1- 0.1
t; ~
O. 11=== 1=0.05
0.07
1=0.02
",-
~~
tt: ~ 0.05 1==
r:::;..
w'"
•
-
I--
0;'"
~~
,
-1
II
I
0.0 I
0.01
D CURVES APPLY FOR POWER
PULSE TRA'N SHOWN
READ TIME AT IJ
TJlpk) - TC = Plpk) 0JCI.)
DUTY CYCLE, 0 = 1J/'2
t-Single Pulse
.~ 0.02
....
t::='
I--:: j;.-
0JCI') = rl') 0JC
0JC = 1 67 0 C/W .
.t~
-"
""" 0.03 f-- t-O.DI
'"
-
't~,ti=t·
~~ O. 31-- ~0.2
:i ~
'.H"l-fl'
- :pr-JU1
..L
0.5
0.02 0.03
0.05
II
0.1
0.2
0.3
0.5
1.0
2.0
3.0
I 111111
5.0
I
10
I I
20
30
50
100
200
300
500
1000
" TIME OR PULSE WIDTH 1m,)
FIGURE 5 - ACTIVE·REGION SAFE OPERATING'AREA
-- -- t- -_ H-i-t - - -
20
10
0-
'.:.r=
5.0
""
....
:!
--
ffi
2.0
13
1.0
'"0
~
0.5
.~
-r~
"500", .
:~
"~'
-' -
p.Oms
'
~
'1.0 ms
t-,
. ....
Safe operating area curves indicate Ie - VeE limits of the tran-
'd ......
-
II
"-
f-~
SIstor that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater dissipation than the curves Indicate.
======:TJ - 150 0 C
j , 0.2
8
!2
O. I
0.05
There are two limitatIOns an the power handling ability of a
transistor: average junction temp.erature and second breakdown .
The data of Figure 5 is based on TJ(pk) = 150°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycle, to 10% provrded TJlpkl < 150°C. TJI~k) may be
calculated from the data In Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations Imposed bV second breakdown.
~~ONDINGWIRE LIMIT 0
=THERMALLY LlMITED@lC-2SoC.
_
ISINGLE PULSE)
---SECOND BREAKDOWN LIMITED
.
===:==CURVES APPLY BELOW RATED VCEO=
iN6040. 2N6043. MJE6040, MJE6043 ~'
2N6041, 2N6044, MJE6041, MJE6044 ....
2N6042, 2N6045, MJE6042, MJE6045
T
, 0.02
1.0
2.0
3.0
5.0
7.0
20
10
30
50
70
100
VCE, CDLLECTOR·EMITTER VOL TAGE IVOLTS)
FIGURE 7 - CAPACITANCE
FIGURE 6 - SMALL·SIGNAL CURRENT GAIN
10,000
5000
-
;;!; 3000
;; 200 0
....
~
""
,;,
E
t-
~
10 0
50
30
20
I0
1.0
'
PNP
5.0
'-
t-...
r-
Ti
"'"
Cob
.125Io~
t>....
Ci\
0
-
0
1 L I LN~N
2.0
i-
:-
O
VCE =4.0 Vdc
IC =3.0 Adc
-
200
TC ~ 250 C
50 0
300
~ 200
"<
~
f--.-
100O
. 13
~
30 0
-
-
I10
20
50
100
200
500
30
0.1
1000
f, FREQUENCY 1kHz)
PNP
_ _ -NPN
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE IVOLTSI
4-202
20
50
100
2N6040 thru 2N6042 PNP
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN
~
PNP
2N6040, 2N6041 , 2N6042
MJE6040, MJE6041, MJE6042
NPN
2N6043, 2N6044, 2N6045
MJE6043, MJE6044, MJE6045
FIGURE 8 - DC CURRENT GAIN
10.000
10,000
---
7000
z 5000
;r
TJo 150°C.........
-
~ 3000
V
.,.-Y
'"~
700
500 f==-55O~
-
20.000
-1
'10.000
--
_.:s .---: ~
- --
~
V
~ 2000 . / 25°C
f--:::>
~ 1000
-
.
:
-V~E UO~
--"
~:s
TJo 150°C.........
3000
~ 2000
~
g
w
V
0.3
0 5 0.7
1.0
1.0
30
5.0
r\'
..........
25°C/"
~
~-550C
. .y
...,
300
200
V
~
V
Y
1000
~
500
0.2
4.0 V
z
V
300
100
0.1
0
;r 5000
'"
ffi
~ t'\
-=-:': ""-'"
II
VCE
7.0 10
o2
0.1
0.3
0 5 0.7
1.0
2.0
30
5.0
7.0
10
Ie. COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
FIGURE 9 - COLLECTOR SATURATION REGION
Vi 3.0
~
I III
I III
'"
2:
~ 2.6
;
'"
ffi
t:
IC
1.0 A
0
I
I
4.0 A
~
'"ffi
1\
\
2.2
lI-
ci: 1.8
t--
'"
~
"-
1.4
W
r-..
'-'.
1.0
1.0
>
1.0
2.0
3.0
5.0
7.0
10
20
03
30
0.5
0.7
1.0
lB. BASE CURRENT (mA)
TJ
150C
0
7.0
10
20
30
J
V
w
/"
1.5
?
V
VI
20
~V
w
'"""
~
. # .".
VBE@VCE - 4.0 V
I
~
V
/
1.0
1.0
5.0
1. 5
~
:>
3.0
TJ 15 0lc
2. 5
;'"~
2.0
lB. BASE CURRENT (mA)
FIGURE 10 - "ON" VOLTAGES
3.0
3.0
'"2:
\
\
~
B
0.5 07
6.0A
~ 2.6
1\
0.3
TJ o 250C
4.0 A
Ico2.0A
""~
"
1.4
III
'"
2:
\
'"
g
>
c;; 3.0
~
150C
\
ri:: 1.8
~
0
6.0 A
2.2
8
TJ
k::::: ~
Bo 250
15 VBE(jat)@IC/I
>
I
:>
tVBE(sat) @IC/IB o 150
TI
/"
t-
I 1
VBE@VCE-4.0V
./'
1.0
VCE(sat)@ ICIIB
VCE(sat) @ICII B 150
0
V
'/
_f-""
150
0
0.5
0.1
0.2
0.3
0.5 0.7
1.0
1.0
3.0
5.0
7.0
05
0.1
10
IC, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5
0.7
1.0
1.0
IC. COLLECTOR CURRENT (AMP)
4-203
3.0
5.0
7.0
10
•
2N6040 thru 2N6042 PNP
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru·MJE6045 NPN
I
PNP
NPN
2N6040. 2N6041. 2N6042
2N6043. 2N6044. 2N6045
MJE6040. MJE6041 •. MJE6042
MJE6043. MJE6044. MJE6045
FIGURE 11 -TEMPERATURE COEFFICIENTS
r--r-'--'--r-r-'--rTTr--'--'---~-'--'-rTTT1
+S.o
G
cz..
~
+4.0 I--+~c---+-+-++++++--+-+-+--+--+-++++l
+40
.
;;; +3.0 I--+-;---t---t-++++++--+-+-+--+-+-H'++l
>ill +2.01--+--1'--t---+-++Htt--++-+-+-hHIl-H
<3
+1.0
w
.§ +3.0
>z
8
8.
w
H:
w
g;
•
+5,0
~
:;
i
1-_+-+_+--+-+-I-+++~2S_0C~t_o_1SrO_OC~'/~--+~++1H
•
-1.0 ovctiCE( ..
__/'
I
-SSoC to 2SoC,/
~
to-
w +2.0
~ +1.0
....~
0.3
O.S
1.0
2.0
~.O
3.0
0
•
'OVC for VCE( .. t)
7.0
2 0Ct0150y i-""
-3.0
11
~
/
V
/
V
-S50C to 250C
..I--
-H:t
OVB for VBE
II II
-5.0
0.1
10
k;::: V
;::::::::r
L
~ -4.0
L--l.-::':--:!-:,--J.--:-:-'-J....l..1:':,--...L-:!-::---:~...L:-'::---'-:'::-'-':'.
0.2
-S50C to 2S oC
~ -2.0
-'
I II
'" -S.O
0.1
2SoC to IS00C
i3
~ -1.0
~
9VBI~rVBE- '2~OCto~~
--~
~
L
-55°C to 25°C
lEw -3.0
:> -4.0
'1
I
I
-2.0
./'
'ICIIB '" hFEI3
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
I
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT (AMP)
FIGURE 12 - COLLECTOR CUT·OFF REGION
10 S
105
i=-REVERSE~ I!=FORWARO
~
....
I
_TJ =IS00C
I - - - 100°C
==
~
'"0
102
10 1
~
100
25°C
+0.4
I-VCE-30V
/
~
8
f- TJ = IS00C
t-- 100°C
t--
10- 1
-O.S
10- 1
+o.s
REVERSE==O;: I=FORWARO
/
10 3
a
1
0
F
.:;
../
30 V
31==== VCE
104
+0.2
-0.2
-0.4
-O.S
-O.B
-1.0
-1.2
-1. 4
25°C
-04
-0.2
to.2
+0.4
+0.6
+0.8
+1.0
VBE, BASE EMITTER VOLTAGE (VOLTS)
VBE, BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - DARLINGTON SCHEMATIC
PNP
2NS040, MJES040
2NS041,MJES041 r - 2NS042, MJES042 I
I
BASE
COLLECTOR
NPN
2N6043, MJE6043
2N6044, MJE6044 r - 2N6045, MJE6045 I
---,
,------1... I
- - -
I
I
I
I
I
I
I
I
I ______ _
L
BASE
COLLECTOR
- - -
-
- - -,
I
.------1...
I
I
I
I
I
I
I
I
I
I
__ .1
__ .1
EMITTER
EMITTER
4-204
+1.2
+1.4
2N604!JJ (SILICON)
MEDIUM-POWER PNP SILICON TRANSISTOR
4AMPERE
... designed for general·purpose switching and amplifier applications
POWER TRANSISTOR
PNP SILICON
o Excellent Safe Operating Area
55 VOLTS
75 WATTS
o DC Current Gain Specified to 4.0 Amperes
<)
Complement to NPN Type 2N3054A
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
IRBE
0
Symbol
Value
Unit
VCEO
55
Vdc
VCER
60
Vdc
100 HI
COllector-Base Voltage
VCB
90
Vdc
Emitter-Base Voltage
VEB
7.0
Vdc
IC
4.0
Adc
Collector Current - Continuous
10
Peak
Base Current
Total Device DisslpatlOn@Tc
=:
25°C
IB
2.0
Adc
Po
75
Watts
Derate above 25°
W/oC
0.43
Operatmg and Storage Junction.
TJ. Tstg
-65
to
+-200
1--- U-;
°C
Temperature Range
p
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance.
Symbol
Max
Unit
°JC
2.33
°C/W
Junction to Case
II
t-- I"--.
L~~I
.J.1.J'i
0
I
"""
0
0
........
.....
0
.......
........
0
20
40
~
~
~
~
~
I~
_!LT
Y
S
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
8 11.94 12.70 0.410 0.500
C
6.35 8.64 0.250 0.340
0
0.11 0.B6 0.028 0.034
E
1.21 1.91 0.050 0.075
F 24.33 24.43
0.95B 0.962 .
G 4.B3 5.33 0.190 0.210
H
2.41
2.61 0.095 0.105
J
14.4B 14.99 0.510 0.590
K
9.14
0.360
P
1.21
0.050
n 3.61 3B6 0.142 0.152
S
B.B9
0.350
3.6B
T
0.145
U
15.15
0.620
All JEDEC Dirnensionsand and Nates Apply.
-
""-.,
0
0
..............
10
\
f".,
~
~
200
TC. CASE TEMPERATURE lOCI
CASE 80·02
TO·66
4-205
K
I
COLLEC~OR v:~r----_-r
H
0
-I
E
_
D
SEATING PLANE
_
STYLE l'
----F-PIN 1 BASE
-J2. EMITTER
CASE
FIGURE 1 - POWER-TEMPERATURE DERATING
0
J'F~-T-H
jL~
-Indicates JEDEC Registered Delta
I
R
I
~I
2N6049
*ElECTRICAl CHARACTERISTICS (TC
= 250 C unless otherwise noted)
Unit
Max
Min
Symbol
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(Ie = 100 mAde, IR - 0)
VCEO(sus)
Collector-Emitter Sustaining Voltage (1)
(lC = 100 mAde, RBE = 100 n
VCER(sus)
Vde
55
Vde
-
60
Collector Cuttoff Current
#lAde
ICEO
(VCE = 30 Vde, IR = 0)
Collector Cutoff Current
(VCE = 90 Vde, VBE (off) = 1.5 Vde)
(VCE = 90 Vde, VBE(off) = 1.5 Vde,
TC - 1500 C)
ICEX
Emitter Cutoff Current
lEBO
-
500
-
1.0
6.0
-
1.0
.25
6.0
100
mAde
mAde
(VBE =.7.0 Vde, IC = 0)
ON CHARACTERISTICS (1)
-
DC Current Gain
(lC = 500 mAde, VCE = 4.0 Vde)
(lC =3.0 Ade, VCE = 4.0 Vde)
hFE
Collector-Emitter Saturation Voltage
VCE(sati
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 4.0 Vdel
Vde
-
(IC = 500 mAde, IB = 50 mAde)
(lC = 4.0 Ade, IB = 800 mAde)
-
0_5
2.0.
-
1.0
Vde
VBE(on)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
MHz
fT
(lC = 200 mAde, VCE = 10 Vde)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 0.1 MHz)
3.0
-
-
200
25
180
pF
Cob
Small-Signal Current Gain
(lC = 100 mAde, VCE = 4.0 Vde, f = 1.0 kHzl
hfe
·Indicates JEDEC Registered Data
(1) Pulse test: .PulseWidth:5300J,ls, DutyCycleS2.0%
FIGURE 3 - TURN-ON TIME
FIGURE 2 - SWITCHING TIME EQUIVALENT TEST CIRCUIT
2.0
TURN-ON PULSE
1. 0
V:"loffI
"
I II
Vee o-----'l/W------.
-- -
-
-
U O
0.5
..-I
. APPROX I
-11 V I
~ 0.3
--..I~t,
_
I,
:ll
0.2
;::
APPROX 9.0 V
_
~
•
'<
IcllB = 10
TJ = 250 C
~ S~ @Vee = 30 Vdc
p
I.I
tr@VCC~~OVd
~
III
:--..
td @VBE(off) = 0
O. 1
:
:
v· -I- - - -1'"
I
I
APPROX I
- 11 V
I
I
+I
I
I
t.--
..... t,
TURN-OFF PULSE
+4.0 V
0.0 5
I, < 15n.
100<1,<500,....
t, < 15 ns
DUTY CYCLE::::: 2.0%
t--
0.03
0.02
0.04
0.06
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
4-206
2.0
4.0
2N6049
FIGURE 4 - THERMAL RESPONSE
1.0
~
0.7 f---D .0.5
O. 5
en
z
~ UJ 0.3
0 12
t-'-'
~:i 0.2
r------;;t;-
0«0.07
w:O;;
!:::! ffi 0.05
0.02
~~
~~
~~
tb ~ o. 11===0.05._
~ ~ 003
.
V
<=
~
0.01
P(pk!
OJclt! •
"'
•
I,\~
1\
0.02
0.04
0.1
0.2
1.0
0.4
o. 6
0.4
2.0
~
_
o
'-'
ul
'-'
>
4.0
O. 2
\
0
1.0
r---
2.0
5.0
10
~+l. 0
~+O. 5
'"8
:;,
r--
t-- • Bv for VCE!$oIItj
TJ =
~
I-'
VBElsati
UJ
o
I-"
@ ICIIB
r--
o. 6
=
Ii!-- r-
>- O.4
O,lorV"
~-2 .0
-2. 5
I-
O. 2
II
0.01
0.020.03 0.05
0.1
0.2 0.3
0.5
1.0
0
0.004
2.0 3.0 5.0
0.D1
0.02
0.1
0.04
0.2
0.4
1.0
~
2.0
4.0
IC. COLLECTOR CURRENT lAMP)
FIGURE 12 - COLLECTOR CUT·OFF REGION
FIGURE 13 - EFFECTS OF BASE·EMITTER RESISTANCE
10 3
10 7
l - t- Vee: 30 Vdc
......
L
/
2
........
6
I--- I-TJ = 1500e
....
.........
:::>
'-'
a: 100
VCE 30Vdc-
"
__ IC = 10 ICES
....
IC = 21CES
I
~
10 1
a:
5
f-
I - f--l000e
...... D<-:"
......
o
S
I--'""'"
VCEI .. t)@ ICIIB = 10
Ie. COLLECTOR CURRENT (AMP)
tiij lO-
V
>
0
~-1. 5
ffi
a:
1000
LV
-
1.0
> o. 8
~
~-o. 5
~ 10
500
2~OC
o
~
0.005
200
1.2
0
i-I.
1. 4
-55 to +150 0C
'E
!Z
100
FIGURE 11 - "ON" VOLTAGES.
'APPLIES FOR lell.$h FE /5
t+1. 5
50
20
lB. BASE CURRENT (rnA)
FIGURE 10 - TEMPERATURE COEFFICIENT
+2. 0
l1
'-..,
IC. COLLECTOR CURRENT lAMP)
+2. 5
3.0 A
o
"l"\'
20
0.01
LOA
~
~
"-
.'\.
10
0.004
500 rnA
IC= 100 rnA
I
J
~
-55°C
./
c
0.8
to
-~
f::=
0.2
-t;;..... --
~~ 0.2
-
"-
r---'-
~
30
1.0
=
...'-'~
2.0
oS
2N6050/2N6052
2N605712N6059
=
200
F--- .:..-
10
20
50
70
100
200
Cib
-
500
1000
f, FREQUENCY (kHz)
50
0.1
..........
r--..
""
100
- -,
0.2
I
I II 1~~6057/2~60~9
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-211
:-.....
C~( i'
2N6050/2N6052
-II
5.0
lt>....
0;
".
50 I---
-
30 0
~
,
I
TJ=25 0 C
20
50
100
•
2N6050 thru 2N6052 PNP/2N6057 thru 2N6059 NPN
PNP
2N6050,2N6051,2N6052
NPN
2N6057,2N6058,2N6059
FIGURE 10 - DC CURRENT GAIN
20,000
I I
III
1 1
10,ODD
40,000
I
VCE = 3.0 V
VCE = 3.0 V
TJ = 150DC..........
20,000
"'1\
TJ = 150DC
z
;;:
,/
-
d:;...,/1
1000
-25 C
:5
S,OOO
~
4,000
..,..,:::>
c
0.3
0.5
1.0
2.0
3.0
5.0
10
25 DC
V
2,000
~.
500
•
0-
ill
.....
-55DC
300
200
0.2
./
10,000
to
,/
1.000
-55°C
SOD
400
0.2
20
0.5
0.3
1.0
IC, COLLECTOR CU,RRENT (AMP),
2.0
3.0
5.0
20
10
IC. COLLECTOR CURRENT (AMP)
FIGURE 11 - COLLECTOR SATURATION REGION
_
~
~
w
to
3.0
JU
2.S
~
~
c
~
w
9.0A
S.OA
IC=3.0A
-
III
III
TJ = 25 DC
1\12A
f'.r-.,
C
>
~
2.2
\
1Jj
~
>
.....
II
S.O A
9.0 A
12 A
\
-I-
1Jj
ti: 1.B
'"
g
-
~
>
2.0
I
:::
8
1.0
TJ=25 DC
~ 2.2
1.4
1.0
0.5
2.6
l
IC = 3.0 A
~
'"
,
'" 1.8
~8
to
3.0
3.0
5.0
10
20
3D
50
"-
1.4
1.0
0.5
1.0
2.0
3.0
5.0
20
10
30
50
IB, BASE CURRENT (mAl
lB. BASE CURRENT (mA)
FIGURE 12 - "ON" VOLTAGES
3.0
3.0
TJ = 25 DC
V
2.5
~
'"
~
w
'">
1.5
1.0
0.5
0.2
~
II
VBF@IV~EIr·n
§;
>'
i-"
. VCE(sa,)@ICIIB=250
0.5
1.0
1.5
VBE(sa"I@llelIB = 250
3.0
5.0
10
20
IC, COLLECTOR CURRENT (AMP)
0.2
//
I JL- ~-
1 VCE( ..,) @ICII"S - 250
o. 5
2.0
~~
VSE@VCp3.0V
1.0
II Jl.- i-0.3
~
w
to
",
r- VBE(..!) @ICIIB = 250
,/
~ 2.0
II'
r-
:>
1/
I
2.5
~
2.0
to
~
I
TJ = 25 DC
0.3
0.5
1.0
2.0
3.0
IC, COLLECTOR CURRENT (AMP)
4-212
5.0
10
20
2N6050 thru 2N6052 PNP/2N6057 thru 2N6059 NPN
NPN
2N6057.2N6058.2N6059
PNP
2N6050.2N6051.2N6052
FIGURE 13 - TEMPERATURE COEFFICIENTS
+S.O
+4. 0
;;; +3.0
+2.0
ttw
+1.0
<3
'OVC FOR VCE( ..t)
+2S oCto +ISOoC
-5SoC to +2S oC
o
u
~ -1.0
~
~
.J---t-"
~ -2.0
~ -3.0 OVB FOR VBE
+±:t:::::+- f-
~ -4.0
-S.O
0.2
I II
0.3
O.S
;;; +3.0
tz
~ +2.0
w
~ -1.0
~
':;P
F5t-
i
I II
3.0
S.O
10
20
-3.0
+~S~~ ~o +ISJOC
OVB FOR VBE
-4.0
-s.o
0.2
Ij
L..-~
/
V [..-1--SSoC to +2SoC
nTI
0.3
I
I.>
I
~ -2.0
,,~SSOC to +2SoC
2.0
+2SoCto +ISOoC .....
-SS~C to +2S 0C"
8
i-'
I
1.0
I
+ovJ FO~ VCE(..t) -
~ +1.0
-I:>
....
+2S0r. to +ISOoC_ 1> .....
t-
"APPLIES FOR ICIIB __.
I
J
I
I
I
I
I
1
I
I
I
I
I
I
Base
I
1
J
I
I
I
IL .....
VVI.--+"'V'ofV-+....J
__
_ _ _ _ _ _ _ ...JI
1L ......
~_"VV\r--+-..J
__
_ _ _ _ _ _ _ ...JI
Emitter
Emitter
4-213
•
2N6053,2N60~4,2N6298,2N6299PNP
(SILICON)
2N6055,2N6056,2N6300,2N6301NPN
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
DARLINGTON
8AMPERE
... designed for general·purpose amplifier and low frequency switching
applications.
• High DC Current Gain hFE = 3000 (Typ) @ IC = 4.0 Adc
• Collector· Emitter Sustaining Voltage -@ 100 rnA
VCEO(sus) = 60 Vdc (Min) - 2N6053, 2N6055, 2N6298, 2N6300
= 80 Vdc (Min) - 2N6054, 2N6056, 2N6299, 2N6301
• Low Collector· Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built·ln Base·Emitter
Shu nt Resistors
•
COMPLEMENTARY SILICON
POWER TRANSISTORS
60·80 VOLTS
75,100 WATTS
2N6053
2N6054
2N6055
2N6056
ES~~
*MAXIMUM RATINGS
PLANE
Rating _
Collector·Emitter Voltage
-
Collector-Base Voltage
Symbol
2N6054
2N6056
2N6299
2N6301
VCEO
60
80
Vdc
Vce
60
80
Vdc
,
Base Current
Unit
5.0
Vdc
IC
8.0
16
Adc
120
mAde
\
Total Device Dissipation @TC = 25°C
2 EMITTER
CASE COLLECTOR
VEe
Ie
2N6298
2N6299
2N6300
2N6301
100
0.571
75
0.428
Derate above 2SoC
-65 to +200
TJ,T stg
NOTE
1 OIM"Q"ISOtA
DO'
.,.
MILLIMETERS
MAX
INCH~S
"IN
MAX
, - 2'" -•, " J4," - • .D4,
'90
",
.'"
", ""
", ,.64
II. '15 .... ....
• ,,&1 -
...".
~37
A
2N6053
2N6054
2N6055
2N6056
Po
Operating and Storage Junction Temperature
STYLE 1
PINl BASE
2N6053
2N6055
2N6298
2N6300
Emitter-Base Voltage
Collector Current - Continuous
Peak
Range
j-~~
r~-,
1550
0830
16
• 99
0039
0135
1191
... ...
1111
F
J
0210
0220
0&15
0151
0161
1050
1219
Watts
R
38'
CoIIItIDrconnl'tledlO, ..
CASE 1101
{TO·3!
WloC
°c
~
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
2N6Z98
2NGZ99
2NG300
2NG301
Symbol
2N6053
2N6054
2N6055
2N6056
2N6298
2N6299
2N6300
2N6301
Unit
ROJC
1.75
2.33
°CIW
·'ndicates JEOEC Registered Data.
FIGURE 1 - POWER DERATING
100
I"
r-- f'.,.
......
"-
"
• IM
1194 12.79
-""b,"
• .86
"
50
75
100
125
Te. TEMPERATURE ~.C)
150
'27
002.
0050 0015
24'
.. 90
0095 01
0510
"62
14
... ..""
Z.81
, "41
'" ""
J.
~
0
0410
U,, "58
..
, ."
"
"
F
G
......... .........
0
25
INCHES
MILUM
l'--..
2N6298 thru 2N6301.........
\
...• .... .,. .....
. ..11 .. ..34•
~ 2N6053 thru 2N6056
OJ.,
'27
'"
175
200
4-214
.89
-
'68 -15'
.50
.,,'
0145
AlIJEOECDIIII'fISI\)lIIlIIIIandMol.AppL~
CASEBO-02
TO·66
2N6053, 2N6054, 2N6298, 2N6299 PNP,
2N6055, 2N6056, 2N6300, 2N6301 NPN
*ElECTR ICAl CHARACTER ISTICS (T C = 250 C unless otherwise noted)
I
Symbol
Characteristic
Unit
Min
Maic
60
-
SO
-
-
0.5
0.5
-
0.5
5.0
-
2.0
750
100
lBOOO
-
2.0
3.0
-
4.0
-
2.S
OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage (1 I
(lC = 100 mAde, IB = 0)
Coliector Cutoll Current
(VCE = 30 Vde, IB = 0)
(VCE = 40 Vdc, IS = 0)
= Rated
mAde
ICED
2N6053, 2N6055, 2N629S, 2N6300
2NS054,2NS05S,2NS299,2N6301
-
Collector Cutoll Current
(VCE = Rated VCB, VBE(off)
(VCE
Vdc
VCEO(sus)
2NS053, 2NS055, 2NS29B, 2NS3oo
2NS054, 2N6056, 2NS299, 2N6301
mAde
ICEX
= 1.5 Vdd
VCB, VBE(off) = 1.5 Vde, TC =
150°C
•
mAde
lEBO
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
,
ON CHARACTER ISTICS (1)
-
hFE
DC Current Gain
(lC = 4.0 Ade, VCE = 3.0 Vde)
(lC = 8.0 Ade, VCE = 3.0 Vdcl
Collector·Emitter Saturation Voltage
(lC = 4.0 Ade, IB = 16 mAdcl
(lC = S.O Ado, IB = BO mAde)
VCE(sat)
Base·Emitter Saturation Voltage
VBE(satl
(lC = B.O Ade, IB = BO mAde)
Base·E mitter 0 n Voltage
(lC = 4.0 Ade; VCE = 3.0 Vde)
Vde
Vde
Vde
VBE(on)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Current Transfer Ratio
(lC
= 3.0 Ade,
VCE
Output Capacitance
(VCB
-
ihlei
= 3.0 Vde, I = 1.0 MHz)
MHz)
2N6053, 2N6054, 2NS29B, 2N6299
2N6055, 2N6056, 2NS300, 2N6301
Small-5ignal Current Gain
(lC = 3.0 Ade, VCE = 3.0 Vde, 1= 1.0 kHz).
-
-
300
200
300
-
pF
Cob
= 10 Vde, IE =0, I = 0.1
4.0
-
hIe
·'ndicat85JEDEC Registered Data.
(1) Pulse Test: Pulse Width
= 300 Ils,
Duty Cycle
= 2.0 %.
FIGURE 3 - SWITCHING TIMES
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
5.0
Vee
·30V
RS & Re VARIED TO OBTAIN DESlnED CURRENT lEVELS
01. MUST BE FAST RECOVERY TYPES. e.g.,
MBD5300 USED .ABOVE IS "" 100 rnA
MSD6100 USED BELOW 18 ~ 100 rnA
3.0
2.0
Re
SCOPE
1.0
o.7
w
::;; O.5
:::-..
.-
Ii.....
b.. .J--"
......
,
r--
P"" r--
........
,.... 1-
If
r--..
3
;::
0.3
.........
-
- .If,
---r-02 -Vee = 30 V
-lcJlB = 250
IBI=I~2
I @V
d
BE(off)--0 ~
O. I =TJ=25 C
2N60&3, 2N6054, 2N6298, 2N6299(PNP)
0.07
5
2N6055, 2N6056, 2N6300, 2N6301 (NPN)
0.0
2.0 3.0
0.5 0.7 1.0
02 0.3
0.1
fortdandtr. DJ isdistonnetted
andV2=O
For NPN test circuit reverse diode, polarities and input pulses.
IC, COLLECTOR CURRENT (AMP)
4-215
5.0 7.0
10
2N6053, 2N6054, 2N6298, 2N6299 PNP,
2N6055, 2N6056, 2N6300, 2N6301 NPN
FIGURE 4 - THERMAL RESPONSE
I
7:== 0=0.5
5
-
3r-- r - 10.2
2
r - - r-O.I
I~
~O.05
7
5-0.02
-
-
rnn
~
k-: p
-t~
..... SINGLE PULSE
~
0.0 I
0.1
DUTY CYCLE. 0 = ll/t2
~ ~
0.01
..llli
0.5
0.3
0.2
R8JC It) = rlt) R8JC
R
= 1.750CIW - 2N605312N6056
8JC 2.330CIW _ 2N629B/2N6301
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READTIMEATq
TJ(pk) - TC = P(pk) 0Jc(t)
P!
K
0.02 ?
•
J......:::; ~
0.7
2.0
1.0
3.0
5.0
7.0
I I I
I I
10
20
70
5
30
100
200
300
500
700 100
t, TIME (m.)
ACTIVE-REGION SAFE OPERATING AREA
FIGURE 5 - 2N6053 thru 2N6056
~
FIGURE 6 - 2N6298 thru 2N6301
:eE3meE!mm
t-:. -1...:.1.- t-r
-
-
-t-
O.lm.
ffi
~o:eiIB~R
~
~
1.~';'
~
5.0 m.
5.0
TJ = 200 0C
1
'" 2.0
~_"'!~ 0.51.0 f=t==
~ - - -- -
8
9
~.~ m.
0
~
::;
~
d
,.I.
I
3.0
L~M:I~T~~'I'II
I
8
EO. 2
SECOND
BONDINGBREAKDOWN
WIRE LIMIT
THERMALLY LIMITED
@TC=25 0C (SINGLE PULSE)
5.0 7D
10
5.01==
'"o 0
~_ o.1.
5
~~§~~~~~~~~~2~N~60~5~4~'2~N~60~5~6~~~~'
2.0
ol;;:; :::;~
20
30
50
70
1=
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 200°C; TC is
de
SECOND BREAKDOWN LIMIT
BONOING WIRE LIMIT
THERMALLY LIMITED
@TC=250C(SINGLEPULSE)
2N6299,2N6301
0.0 5
1.0
2.0
3.0
100 0
a
500
:;t 300
~ 20 0
~
~
j
0
0
~0
I0
1.0
20
F t:..
r-
100
200
IOU
t-
3O
0.1
I, FREQUENCY (kHz)
'" >Cob
-
0.2
-
2N60~4'
2N6053,
2N6298, 2N6299(PNP)
2N6055, 2N6056, 2N6300, 2N6301 (NPN)
0.5
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
4-216
~
I''':
0
500 1000
--
t-...
Cib
0
50
70
t---
0
2N6053, 2N6054, 2N6298, 2N6299 (PNP)
.10
50
30
T~ ='25~d
200
~ .1 jl~,2N6~6-jN~3~Oi~~~~01INP7)
5.0
20
FIGURE 8 - CAPACITANCE
VCE = 3.0 Vde
IC = 3.0Ade
2.0
10
300
TC = 250C
100
5.0 7.0
variable depending on conditions. Second breakdown guise limits
are valid for duty cycles to 10% provided TJ(pk)!S 200 0 C. TJ(pk)
may be calculated from the'data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.
_.
--
~
\
1,\
2N6298, 2N630D-t-~
FIGURE 7 - SMALL·SIGN:4L CURRENT GAIN
...
O. ms
......
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
500 0
;;: 300 0
;; 2000
5.0ms
.1
100
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - v CE limits of the transistor
-
t- l-t;.' ~ .... j - 1'10;1 m.
TJ 2000C
-
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
10,000
-1=
B 2.0
\1\
0.21-+--I--+--+-t-+-1t-1HIIt-12-iN6-05+3,-2N-60t-55-t--L-fl~+'l-tt1
0.1
O.05.~
1.0
0
50
100
2N6053, 2N6054, 2N6298, 2N6299 PNP,
2N6055, 2N6056, 2N6300, 2N6301 NPN
NPN
PNP
I
2N6053. 2N6054. 2N6298. 2N6299
2N6055. 2N6056.2N6300. 2N6301
FIGURE 9 - DC CURRENT GAIN
20,000
20,000
V~E ~ 310 ~
7000
~ 5000
z 5000
;;:
TJ = 1500 C.........
........ ...-
~ 3000
~ 200 0
'"
1:l
I
VCE = 3.0 V
10,000
10,000
V ....
----
.......
25·C
-
.A'"
'"ffi
'-~
~
~Y"
30
20
u
w
0
500
300
200
0.2
0.5
0.3
0.7
1.0
2.0
3.0
l'\:'
l../
7Z f=-55 C
~
~
.v
0.1
~
25 0 C. /
1000
c
f-'"
.Y
:,;"
1:l
~
100 0
c
~ 700
- 500=,-55.C
u
TJ 150 0 C.........
3000
2000
5.0 7.0 10
/"
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT lAMP)
IC, COLLECTOR CURRENT lAMP)
FIGURE 10 - COLLECTOR SATURATION REGION
G 3.0
I III
~
c
~
~
~
ffi
IIC = 2.0
"IA
2.6
II
~
~
>
2.6
\
ffi
00-
~
'"
~
8
1.0
2.0
t--
3.0
5.0
7.0
10
20
30
"-
1.4
W
u
1.0
\
1.8
0
0-
1.4
0.5 0.7
\
\
0
'-
0.3
> 1.0
0.3
....
0.5
0.7
1.0
IB, BAS~ CURRENT ImA)
3.0
TJ = 25·C
1/
2:. 2. 0
w
1. 5
...,.,.
VBE)@VCE = 3.0 V
:>
1.0
G
~
0.5
0.1
./
0
~
w
II
I I I
""
""~
0
>
>-
0.3
1.5 r- VSE@VCE=3.0V
VSElsat)@ICIIS- 250
VCElsat)@IC/IS = 250
0.5 0.7, 1.0
2.0
3.0
5.0 7.0
0.5
0.1
10
0.2
0.3
-
....- f-'"
1.0
VCElsatl@IC/IS-250
0.2
10
~
V
2.0
'"
........ V
VSElsat) @IC/IB=250
-i
7.0
5.0
20
30
2.5
V
o
o
3.0
FIGURE 11 - "ON" VOLTAGES
3.0
TJ = 25·C
5
>
2.0
IB, BASE CURRENT ImA)
2. 5
'"~
6.0 A
> 2.2
\
_ 1.8
o
8~
""'"
TJ=·25·C
4.0 A
~
1\
\
I II
IC=2.0A
w
6.0A
2.2
~
~
0
"
4.0A
o
~
G 3.0
TJ = 25·C
0.5 0.7
1.0
.........
2.0
3.0
IC, COLLECTOR CURRENT lAMP)
IC, COLLECTOR CURRENT lAMP)
4-217
...-
?1/
,/
5.0 7.0
10
2N6053, 2N6054, 2N6298, 2N6299 PNP,
2N6055, 2N6056, 2N6300, 2N6301 NPN
I
PNP
2N6053,2N6054,2N6298.2N6299
NPN
2N6055,2N6056,2N6300,2N6301
FIGURE 12 - TEMPERATURE COEFFICIENTS
+5.0
i3
sa..
+5.0
+4.0
~
'leilB < hFE/3
'E
;; +3.0
>
II
I-
al
+2.0
~ +1.0
250C to +1500C
----
8
~
-1.0 'ove {or 'ICEI ..tl
•
-5.0
0.1
0.2
11
0.3
0.5
+2.0
2.0
25°C to 150°C
II"
<.>
w
'"=>
~
3.0
5.0
OVC for VCE .. t)
-1.0
~
~ -2 .0
7.0
-4.0
10
V
V
V
0.1
0.2
I II1.0
0.3
IC. COLLECTOR CURRENT lAMP)
O.S 0.7
V
-5S oC to 25°C
.J..-
f.-I-I:t:
OVB for VBE
l-
i
~V
2SoC to IS0¥ .....
~ -3.0
17
:::::~
-SSoC to 2S oe
o
...tf--r-
-5.0
1.0
'IC/IB < hFE/3
~ +1.0
7
.1.1 -"
-550CtO+25~ ............. ......
-3.0 OVB for VBE-250C to +~ I-- 55°C to 250C
-2.0
~
I:> -4.0
'"
~
<.>
./
..... /
w
g;
!;;;
/
U
+4. 0
.§ +3.0
2.0
I
3.0
5.0 7.0
10
+1.2
+1.4
IC. COLLECTOR CURRENT (AMP)
FIGURE 13 - COLLECTOR CUT-OFF REGION
105
lOS
4I==:REVERSE~ :!::::.FORWARD
~REVERSE.:=:;:;o; I=FORWARO
<" 10
.:;
~
'"'"
13
1031== VCE
30 V
=VCE=30V
I
/
2
'"
o 10
....
~
8
/
...... TJ = 150°C
f-TJ 1500 C
10 I
r--
100°C
r---:---
25 0 C
~ 100
10- I
+0.6
+0.4
./
+0.2
-0.2
/
r--- 100 C
r--- 25°C
0
-0.4
-0.6
-0.8
-1.0
-1.2
-1. 4
10- 1
-0.6
-0.4
-0.2
+0.2
+0.4
+0.6
+0.8
+1.0
VBE. BASE EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE IVOLTS)
FIGURE 14 - DARLINGTON SCHEMATIC
Collector
PNP
2N6053
2N6054
2N6298
2N6299
--,
,-----+-,
Base
I
IL _ _ _ _ _ _ _
Collector
NPN
2N6055
2N6056
2N6300
2N6301
I
I
I
I
I
I
--,
,-----+...,
)
I
I
Base
I
I
I
I
I
I
I
I
I
I
1......,""'
.......
L
___
_'VYIr--+-....
_ _ _ _ _ ..JI
__ ..J
Emitter
Emittet
4-218
2N6077
2N6078
HIGH VOLTAGE NPN SILICON TRANSISTORS
7 AMPERES
. the 2N6077 and 2N6078 transistors ~re designed for high·
voltage. high-speed switching applications. They are characterized
for operating directly off the rectified 110 Volt power lines in
circuits such as:
NPN SILICON
POWER TRANSISTORS
275-300 VOLTS
45 WATTS
• Switching Regulators
• Solenoid and Relay Drivers
•
Motor Controls
•
Inverters
•
*MAXIMUM RATINGS
I
Symbol
2N6077
2N6078
Unit
Collector-Emitter Voltage
VCEX
300
275
Vdc
Collector-Base Voltage
VCBO
300
275
Vdc
Rating
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base Current -:- Continuous
Total Power Dissipation
@TC;250C
Derate above 25°C
Operating and Storage Junction
VEBO
6
Vdc
IC
ICM
7
Adc
10
IB
4
Adc
45
0.257
-65 to +200
Watts
wf'C
°c
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Aesistance, Junction to Case
Maximum Lead Temperature for Soldering
'i
E
_
D
-,K
i
SEATING PLANE
---F--
-J-
Po
TJ. Tstg
'~'
4- ------- -1
Symbol
Max
Unit
ROJC
3.9
°CIW
TL
275
°c
Purposes: 1/8" from Case for 5 Seconds
·'ndicates JEDEC Registered Data
IQ')<;0 ~ ~ I
~\
I
5tT
H ""
t
~
-I
G
STYLE I:
PIN I. BASE
2. EMITTER
CASE. COLLECTOR
MILLIMETERS
DIM MIN
MAX
6 11.94 12.70
6.35
8.64
C
0
0.71
0.B6
1.27
E
1.91
F 24.33 24.43
G
4.63
5.33
H
2.41
2.67
J
1446 1499
K
9.14
P
1.27
n 3.61 3.B6
S
B.B9
T
3.66
U
15.75
.-
INCHES
MIN
MAX
0.470 0.500
0.250 0.340
0.026 0.034
0.050 0.D75
0.956 0.962
0.190 0.210
0.095 0.105
0570 0.590
0.360
- 0.050
0.142 0.152
- 0.350
0.145
- 0.620
All JEDEC Dimensions and and Notes Apply.
CASE BO·02
TO·66
4-219
2N6077, 2N6078
*ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted.)
I
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
(lC = 200 mA, IB = 0)
VCEO(sus)
2NS077
2NS078
Emitter Cutoff Current
(VBE a S Vdc, IC =0)
Collector Cutoff Current
(VCEV = 250 Vde, VBE(off) = 1.5 Vdc)
lEBO
ICEV
I
(VCEV
= 250 Vdc, VBE(off) = 1.5 Vdc, TC = 1250 C)
Collector Cutoff Current
(VCE = 250 Vde, VBEloffl
•
275
250
2NS077
2NS078
2NS077
2NS078
ICEO
= 1.5 Vdc)
2NS077
-
-
1.0
-
5.0
0.05
8.0
0.2
-
2.0
12
70
mA
hFE
IIc = 1.2 Adc, VCE = 1 Vdc)
Collector~Emitter Saturation Voltage
IIc = 1.2 Ade, IB = 0.2 Ade)
VCE(sad
(lC = 3 Ade, IB = O.S Adc)
IIc=5Ade,IB a l Ade)
Base-Emitter Saturation Voltage
IIC a 1.2 Ade, IB = 0.2 Adc)
1.0
3.0
-
1.S
-
1.9
2.0
Is
-
tf
-
0.75
5.0
0.75
VBElsetl
2NS077
2NS078
2NS077
2N6078
IIc = 3 Ade, IB = 0.6 Ade)
. IIc = 5 Adc, IB = 1 Ade)
Vdc
-
2NS077
2NS078
2NS077
2NS078
mAde
mAde
ON CHARACTERISTICS
DC Current Gain
Vdc
0.5
Vde
-
DYNAMIC CHARACTERISTICS
Current·Gain - Bandwidth Product
IIC = 200 mAde, VCE =10 Vdc, f te•t
=1.0 MHz)
SWITCHING CHARACTERISTICS
Resi.tive Load (Table 1)
Rise Time
Storage Time
Fell Time
I
I
I
(VCC - 250 Vde, IC = 1.2 Adc,
IBI = 192 = 200 mAde = 100 1lS,
puty Cycle .. 2.0%)
t,
".
".
".
* Indicates JEDEC Registered Data
FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
10
ii:
'"
1
5
3
SO",
100.,
.. 200.,
:!
I-
1,\
I
~a: o.1
B o. 5
a:
O. 3
. -
BREAKDOWN LIMITED
~ 0.2 SECOND
BONDING WIRE LIMITED
_ O.
I THERMALLY lIMITEO@TC=250 C----
8r.i 0.00.015
- 0.03
0.02
0.0 I
I
ti
The,e a,e two limitation. on the powar handling ability of a
transistor: average junction temperature and second breakdown.
Safe Operating area curve. indicate IC-VCE limits of the t,ansls.tor
that must be observed for reliable oPeration; i.e., the transistor
must not be subjected to greater dissipation than the curves
300",
1m,
.'\.
indicate.
The data of Figures 12 and 131. based on TC-250 C;TJ(pk)
is va,iable depending· on power level. Saeond breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
I'\. lol~,
100m,
2N6078
d~t
2N6017
5 7 10
20 30 5010 100 200300 5001001000
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI
temperature'according to Figure 1.
fjl
4-220
PNP
NPN
2N6107 2N6288
2N6109 2N6290
2N6111 2N6292
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
designed for use in general-purpose amplifier and switching
applications.
• DC Current Gain Specified to 7.0 Amperes
hFE = 30-150@
= 3.0 Adc - 2N6111, 2N6288
= 2.3 (Min) @ 'C = 7.0 Adc - All Devices
'c
•
Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288
= 50 Vdc (Min) - 2N6109, 2N6290
= 70 Vdc (Min) - 2N6107, 2N6292
•
High Current Gain - Bandwidth Product
fT ~ 4.0 MHz (Min) @ 'C = 500 mAdc - 2N6288, 90, 92
= 10 MHz (Min) @ 'C" 500 mAdc - 2N6107, 09,11
•
TO'220AB Compact Package
•
TO-66 Leadform Also Available
30-50-70 VOLTS
40 WATTS
•
-MAXIMUM RATINGS
Rating
Coliector~Emitter
Symbol
Voltage
2N6111
2N62BB
2N6109
2N6290
2N6107
2N6292
30
40
70
80
•
•
50
60
5.0
7.0
10
3.0
."
40
0.32
VCEO
Collector-Base Voltage
VCB
Emitter-Base Voltage
Collector Current Continuous
Peak
VEB
..
IC
Base Current
IB
Total Power Dissipation
@TC=2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Range
Po
.
..
Characteristic
Thermal Resistance, Junction to Case
~
"""-
30
z
0
;:
~
iii
"-
"-
'""'s:
li! 10
~
o
40
W/oC
°c
I
o
iJI
,J
SECT A·A
2. COLLECTOR
3. EMITTER
4. COLLECTOR
60
MILLIMETERS
DIM MIN MAX
A 15.11 15.75
9.65 10.29
B
4.06
C
4.82
0.64
D
0.89
3.73
_~61
~
G
2.41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
L
1.14
1.27
N
4.83
5.33
n 2.54 3.04
R
2.79
2.04
S
1.14 1.39
T
5.97
6.48
U
0.76
127
1.14
V
"r---.
<5
20
Adc
Watts
--l1--J
20
o
Adc
---l I!-- R
FIGURE 1 - POWER DERATING
~
Vdc
STYlE I:
PIN 1. BASE
"Indicates JEDEC Registered Data
I-
Vdc
..
THERMAL CHARACTERISTICS
40
Vdc
_ - 6 5 to + 1 5 0 -
TJ. Tstg
Unit
80
100
""'"
120
I
'}...
140
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
160
CASE 221A-02
TC. CASE TEMPERATURE ('C)
TO-220AB
4-221
2N6107, 2N6109, 2N6111 PNP, 2N6288, 2N6290, 2N6292 NPN
•
-ELECTRICAL CHARACTERISTICS ITC· 25°C unle.. otherwise notedl
Ch....teriltic
I Symbol
OFFi:HARACTERISTICS
Collector·Emltter Sustaining Voltage III
VCEO(susl
2N6111, 2N6288
(lC ~ 100 mAde, 18 ~ 01
2N6109,2N6290
2N61 07, 2N6292
Collector Cutoff Current
ICEO
2N6111,2N6288
(VCE ·20 Vde, 18 e 01
2N6109,2N6290
(VCE • 40 Vde, 18 ~ 01
(VCE ~ 60 Vde, 18 = 01
2N6107,2N6292
Collector Cutoff Current
ICEX
2N6111,2N6288
IVCE = 40 Vde, VE8(011) = 1.5 Vdc)
2N6109,2N6290
IVCE = 60 Vde, VE810ffl =1.5 Vdel
2N6107,2N6292
IVCE e 80 Vde, VEB(offl = 1.5 Vdel
(VCE = 30 Vde, VEB(off!= 1.5 Vdc, TC = 1500 C12N611" 2N6288
(VCE = 50 Vde, VEB(offl = 1.5 Vdc, TC = 150 0C12N6109, 2N6290
(VCE = 70 Vdc, VE8 (0111 = 1.5 Vde, TC ~ 150°C) 2N6107, 2N6292
Emitter Cutoff Current
(VBE = 5.0 Vde, IC =01
ON CHARACTERISTICS (I)
DC Current Gain
lic = 2.0 Ade, VCE = 4.0 Vdcl
lic = 2.5 Adc, VeE = 4.0 Vdel
lic = 3.0 Ade, VCE = 4.0 Vdel
lic = 7.0 Ade, VCE = 4.0 Vdcl
Collector-Emitter Saturation Voltage
lic = 7.0 Ade, IB = 3.0 Adcl
Base·Emitter On Voltage
lic = 7.0 Adc, VCE = 4.0 Vdel
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
lic = 500 mAde, VCE = 4.0 Vde, 'test = 1.0 MHzl
2N6288, 90, 92
2N6107, 09, II
Output Capacitance
IVCB = 10 Vde,IE = 0, I = 1.0 MH~I
Small·Signal Current Gain
lic = 0.5 Ade, VCE = 4.0 Vde, f = 50 kHz)
Min
M.x
30
50
70
-
-
1.0
1.0
1'.0
-
100
100
100
2.0
2.0
2.q
1.0
Unit
Vde
mAde
/tAde
-
lEBO
mAde
mAde
-
hFE
30
30
30
2.3
ISO
150
ISO
VCElsatl
-
3.5
Vde
VBElonl
-
3.0
Vde
2N6107,2N6292
2N6109,2N6290
2N611', 2N6288
All Devices
-
MHz
IT
4.0
10
-
Cob
-
250
pF
hie
20
-
-
"IndIcates JEDEC Registered Data.
111Puise Test: Pulse Width C;; 300 /t., Duty Cycle C;; 2.0%.
12)IT = I hie I • Itest
FIGURE 3 - TURN-ON TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
2.0
VCC
+30 V
0.7
0.5
RC
RB
TJ = 25°C
VCC=30V
lellB -10
1.0
SCOPE
:g
0.3
w
0.2
'";:::
-'
51
tr. tf:;:,10 ns
OUTY CYCLE = 1.0%
-4V
RBand Re VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.1
4-222
"
....... ........
i'-
0.07
0.05
-
t,
..- i-'
td@. BElo"'''' 5.0 V
0.03
0.02
0.07
01 MUST BE FAST RECOVERY TYPE, ego
MBD5300 USED ABOVE IB ~IOO mA
MSD6100 USED BELOW IB "100 mA
"-
0.1
0.2
0.3
0.5
1.0
2.0
Ie, COLLECTOR CURRENT lAMP)
3.0
5.0 7.0
2N6107, 2N6109, 2N6111 PNP, 2N6288, 2N6290, 2N6292 NPN
FIGURE 4 - THERMAL RESPONSE
7
..
t-
000;
5
i-'-t-'-
"
3
w
u
,
2
v;
,
~
::!
I:
01
z
-
++
0'
0
00 71-- 005
5
00 I-001
00 3
~ 00 1~
v;
00'.....;-:SING\E .iUlSj t--
I
J..--1:::j;;
t,
DUTY CYCLE, 0 ""!J '12
. 11'111
20
READ TIME AT"
TJlpkl . TC' Plpkl ZOJCI,I
50
' I 111111
I I
10
10
50
100
1.1 .1 1..LU1
1.0 k
500
200
TIME (ms}
FIGURE 5 - ACTiVE-REGION SAFE OPERATING AREA
10
7. 0
-
~
5.0
TJ = 15O'C
~
>- 3.0
~
0
'"
c 1.
~
8~
f--
7
5
::
....
I\,
........
1\1.u'
10
VCE.
-0.5 ms
t'\
20
30
CDllECTOR.E~ITIER
The data of Figure 5 is based on TJ(pk! = 1500 C; TC is variable
depending on conditions. Second breakdown pulse lim1ts are valid
for duty eyeleSlo 10% provided TJ{pk! ~ 1500 C. T J{pk! may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
t-- dc
2N61". 2N~2882N6109. 2NS29o
2N6t·2Nj292
7.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and ~econd breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
i\
{SINGl~ PUlS~1
0.3
D. 1
5.0
5.0 ms
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
AT TC = 2S'C
2.0
i3
...
50
values iess than the limitations imposed by second breakdown
100
70
VOLTAGE {VOLTS!
FIGURE 6 - TURN-OFF TIME
, FIGURE 7 - CAPACITANCE
30 0
5.0
3.0
TJ = 25·C
VCC = 30 V
lells = 10
lSI = IS2
2.0
~
ts
1.0
O. 7
~ 0.5
u
z
«
>-
;::
0.2
r- r-
w
j
0.3
I I
TJ~25JC- t-t-
20 0
10 0
j{..
<>
"'- ....
~
«
i'
tf
u
>'
200
100
50
la. aASE CURRENT ImA)
30
.§. +1.5
z
G
~
w
~
c
20
FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5
1.6
~
5.0 A
1.2
25°C
13
c
2.5 A
100
~ 70
'" 50
;
TjJslJ
II
·1.6
16 - 101•
......
I'.
100°C
IC~S
IC-2.ICES
f-
-
25°C
r......
IC -ICES
1
2
10-3
IC -ICES
=
~.3
REVERSE
~.2
E ITypicallCES Values
FORWARD
-0.1
0
+0.1 +0.2 +0.3 +0.4 +0.5
VBE. BASE·EMITTER VOLTAGE IVOLTS)
~
+0.6
0.1 k
20
+0.7
4-224
I
I obtaIned from ~igure ,12)
40
"
""'"
60
80
100
120
TJ.JUNCTION TEMPERATURE 10C)
-....
140
160
NPN
PNP
2N6121 2N6124
2N6122 2N6125
2N6123 2N6126
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
4 AMPERE
... designed for use in power amplifier and switching circuits, packaged in the compact TO·220AB outline. TO·66 leadform also
available.
"MAXIMUM RATINGS
RatlOg
Symbol
2N6121
2N6124
veE a
45
45
Collector-Emitter Voltage
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current
'e
Base Current
'B
Po
Totsl Power Dlsslpatlon@Tc"'2SoC
I
I
2N6122
2N6125
60
60
5.0
4.0
1.0
45-80 va LTS .
40 WATTS
I
2N6123
I
80
80
2N6126
Unit
Vd,
•
Vd,
Vd,
Ad,
Ad,
40
Watts
mW/oC
320
Derate above 25°C
TJ, T stg ~ . .65to+150
Operating and Storage Junction
Temperature Range
POWER TRANSISTORS
COMPLEMENTARY SILICON
°c
THERMAL CHARACTERISTICS
Max
Characteristic
3.12
Thermal ReSistance, Junction to Case
*ELECTRICAL CHARACTERISTICS ITc
=
2SoC unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (11
(Ie :0.1 Adc, 18'" 01
Collector Cutoff Current
(VCE = 45 Vde, IB = 0)
(VCE = 60 Vdc, IB ~ 0)
(VCE '" 80 Vde, IB = O~
Collector Cutoff Current
(VCE = 45 Vde, VEBloff)" 1.5
(VCE = 60 Vde, VEBloff) = 1.5
(VCE = 80 Vde, VEB(off) = 1.5
(VCE '" 45 Vde, VEBCoffl = 1.5
TC = 1250 C)
(VCE '" 60 Vdc, VEBfoff) ~ 1.5
TC = 125 0 C)
IVeE "" 80 Vdc, VEB(off) = 1.5
TC = 12S0C)
60
80
mAdc
1.0
1.0
1.0
2N6121,2N6124
2N6122.2N6125
2N6123,2N6126
~~
-t
c
I-~
I
A
+
lu
Vde)
Vde)
Vdd
Vdc,
2N6121,2N6124
2N6122,2N6125
2N6123,2N6126
2N6121.2N6124
0.1
0.1
0.1
2.0
Vdc,
2N6122,2N6125
2.0
Vde,
2N6123,2N6126
2.0
'[
U W
1-
K
jSECTA-A
0.1
0.1
0.1
1.0
Emitter Cutoff Current
(VSE = 5.0 Vdc, IC = 0)
leBO
mAde
DC Current Gain (1)
(lc = 1.5 Ade, VCE'" 2.0 Vde)
hFE
25
25
20
10
10
7.0
2N6126,2N6124
2N6122.2N6125
2N6123,2N6126
2.0 Vde)
2N6121,2N6124
2N6122.2N6t25
2N6123.2N6126
Collector-Emitter Saturation Voltage (1)
(lC'" 1.5 Ade. 18 = 0.15 Adc)
lie'" 4.0 Ade, IS = 1.0 Ade)
Sase-Emitter On Voltage (1)
(lC '" 1.5 Adc, VCE '" 2.0 Vde)
100
100
80
Vd,
VCElsatl
0.6
1.4
1.2
VSElon)
Vd,
DYNAMIC CHARACTERISTICS
Small-5ignal Current Gain
(lc = 0.1 Adc. VCE" 2.0 Vdc, f - 1.0 kHz)
hI.
25
Current-Gain·Bandwidth Product
(lC'" 1.0 Adc, VCE" 4.0 Vdc, f '" 1.0 MHz)
for
2.5
MHz
tL
•
H
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERS
DIM MIN MAX
A 15.11 15.75
9.65 10.29
8
C 4.06
4.82
0.64 0.89
0
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
0.36 0.56
K 12.70 1427
L
1.14
1.27
N
4.83
5.33
n 2.54 3.04
R
2.79
2.04
S
1.14
1.39
T
5.97
6.48
U
0.76
1.27
1.14
V
J
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221A.Q2
T()'220AB
(llPulse Test: Pulse Width ~30a J.ls, Duty Cvcle ~2.0"'.
-Indicilltes JEDEC Registered Data.
4-225
~
l
Dd~tG
i.-J
mAdc
ICBO
1";\r,"'
'1+1'
-jeR
2N6121,2N6124
2N6122,2N6125
2N6123.2N6126
4
-
'}
mAde
ICEX
ON CHARACTER ISTICS
C
lr
45
ICEO
Collector Cutoff Current
(VCB '" 45 Vdc, IE = 0)
{Vce = 60 Vde, IE z. 01
(Vce = 80 Vde, IE = 0)
(lc .. 4.0 Ade, VCE
f
Vd,
VCEO(sus)
2N6121.2N6124
2N6122.2N6125
2N6123,2N6126
2N6121,2N6122,2N6123,NPN,
2N6124,2N6125,2N6126,PNP
FIGURE 1 - DC CURRENT GAIN
10
TJ -1500 C
ffi ,~::
N
::;
-I-
~ 3.0
2.0
o
I
;;
z
~ 1.0
--1
~
=
a
•
u
-
0.1
0.5
-
--
--
....
1-
-
VCE-2.0V
VCE' 10 V
===
......
---
I""'"
~
r-
--550 C
= 250 C
........
0.3
o
~ 0.2
0,1
0.004
0.007
0.01
0.02
0.03
0.1
0.05
0.2
0,5
0.3
1.0
2.0
3.0
4.0
IC. COLLECTOR CURRENT IAMPI
FIGURE 2 - COLLECTOR SATURATION REGION
_
2,0
~o
~
1.6
\
TJ = 250 C
~o
IC' 10mA
100mA
1.0A
3.0 A
> 1.2
~
~
~
0.8
\
~j
\
\
1\
\
o
\
0.4
"-
o
u
ul
I-
........
§; 0
0.05 0.07
0.1
0.7
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
lB. BASE CURRENT (mAl
s
o
I
~
70
100
200
300
500
!~ppLJsIFbIJ IIGIlBI .. ~F~/~
G
~ +2.0
TJ= -650 C10 +1500 C
.§ +1.5
L
~
~ +1.0
1.2
~
w
~
50
+2.5
TJ·250 C
1.6
3D
FIGURE 4 - TEMPERATURE COEFFICIENTS
FIGURE 3 - "ON" VOLTAGES
2.0
20
I
1
VBElsat)@ IcllB 110
0.8
o
>
~
<3
~ +0.5
8
w
g;
VBE@VCE=2.oV
IJ CE (",,)@ICIIB=10
0.01
~
",,""
0.020.030.05
0.1
0.2 0.3 0.5 1.0
Ie. COLLECTOR CURRENT (AMP)
'8V for VCE(sat)
~
-,TI'IW
-t 5
l-
i
2.0 3.04.0
4-226
,/
-0.5
~1-1.0
III
0.4
0.005
..-
1/
-2.0
-2.5
0.005
0.01
I " '"
,/
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
Ie. COLLECTOR CURRENT (AMP)
2.0 3.04.0
2N6121,2N6122,2N612~NPN,
2N6124,2N6125,2N6126,PNP
FIGURE 5 - COLLECTOR CUT-OFF REGION
FIGURE 6 - EFFECTS OF BASE-EMITTER RESISTANCE
la3
~ 10 7
:z:
2
ew
-TJ-15a'C
1-'
~
-VCE-3av
.......
106
u
!
1 = =REVERSE
=
FORWARO=
=
104
-a.l
-a.2
+0.'
VCE - 30 V
.......
?
- -
IC=lOxICES
........
.......
~
......
.......
IC = 2 x ICES
I'-..
......
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
~
I-
ICES
-a.3
?
;}. 103
=25'C
la-3
-a.4
~
W
..........
Ic~ICES
105
~
:::::::::: ::=laa'c
........
.......
~ 102
+0.2
+0.3
+0.4
+a.5
'a.6
~
40
20
60
BO
100
120
140
160
TJ. JUNCTION TEMPERATURE I'C)
VBE. BASE·EMITTERVOLTAGE IVOLTSI
FIGURE 8 - CAPACITANCE
FIGURE 7 - SWITCHING TIME EQUIVALENT CIRCUIT
300 ......""
....
'r---.,-,-.,.,"TTTT'"--.".---"TTTrT---,Ir""J."I.--,----,
I-H-F'N..t:l-++++--t-+t-+-+-+-+++++ TJ= +25'C -
TURN·ON PULSE
A
+11 P
V P R O A X Vec
RC
I
Vm 0 t- -
-
-
Vm D--'lM-""'I"--t
VEBI'ttI---l1--11
APPROX
RB
---1131--
I
+11 V
,
Cjd «Cob
t1 ,.;;;7.0 ns
:
: : lOa<12<5aa",
Vin-i- - -1- T - 13<15 ns
I
I
--1
12 J-TURN.OFF PULSE
-4.av
Ccb
DUTY CYCLE ~ 2.a%
APPROX -9.a V
0.2 0.3
Ae AND Re VARIED TO OBTAIN DESIRED CURRENT LEVELS
FIGURE 9 - TURN-ON TIME
2.0
1~= f=
II
IICIIBI=
TJ = 25'C
I,@VCC 3a V
I.a
F
0.7
0.5
a.5
~ a.3
~ 0.2
n-
~ 0.3
1,@Vcc-lav
w
-+-!-
II
!i-
If@VCC=30V
~;
IB1=IB~t r-
IcllB = 10
1s'=ls 1/811= i=
TJ = 25'C
i=
i=
_II
If@VCC= 10 V
.......
'" 0.2
;::
;::
a. 1
O. 1
Id@VEBI,If) 2.a V
a.a 7
a.a 5
a.a3
0.02
0.05 a.37
20 3040
FIGURE 10 - TURN-OFF TIME
2.a
I.a
a. 7 ~
10
1.0
2.0 3.a 5.0
0.5
VR. REVERSE VOLTAGE IVOLTS)
0.07
0.05
~
a.l
0.5 0.7 1.0
a.2
a.3
IC. COLLECTOR CURRENT lAMP)
2.0
0.03
0.02
0.05 0.07
3.0 4.0
0.5 0.7 1.0
0.2 0.3
IC. COLLECTOR CURRENT lAMP)
0.1
4-227
-
2.0
3.0 4.0
•
2N6121,2N6122,2N6123,NPN,
2N6124, 2N6125, 2N6126, PNP
RATING AND THERMAL DATA
FIGURE 11 - ACTIVE REGION SAFE OPERATING AREA
10
100IJs
0: 5. 0
"!!....
i
I
'"
2.0
I
1.0
- -
0
~
~
O. 5
s
•
~
"' ",
TJ,150oC
-
Secondary breakdown Ilmtt
Thermal hmlt at TC '" 25°C
Bondmg Wire limit
5m,
l\
There are two limitations on the power handling ability of a
transistor: peak junction -temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
I'\.
,\
1\1 m,
that must be observed for reliable operation; Le., the transistor
must not be subjected to greater dissipation than the curves indicate.
1\
Thedal. of Figure 11 is based on TJlpkl = 1500 C; TC iovariable
depending on conditions. Second breakdown pulse limits are valid
for dulV cvcles 10 10% provided TJlpkl';; 1500 C. T Jlpkl mav be
calculated from the data in Figure 12. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations im~osed by second breakdown.
Curves apply below rated VCEO
I I I I 112N6121. 2N6124- f12N6122.2N6125 -\'\
I
O. 2
Jt
I
O. I
1.0
2N6123.2N6126
10
20
5.0
2.0
50
100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
N1.°m_ _BfH.
FIGURE 12 - THERMAL RESPONSE
~
~
0.7
0.5 0 "0.5
~
0.3
::::i
0.2
~ 0'21111111-1=-""1
~
':i.
0.1
~~
0.1
0.07 --- 0.05
:E 0.05
~
0.02.....
0.03
0.02 --" 0.01
,
ffi
~
d::: -
I
-l
-j 11112
~
ZoJCIII ' ,III ROJC
ROJC " 3.12"C/w Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT 11
TJlpkl - TC " P(pkl ZOJCIII
DUTY CYCLE. 0 "11/12
SI~G~E r~Lr~
"'I
nn
l
PtlPk
1 ......
I I I II
I I
I I I I I I II
I I
I I I I II
... 0.0 O~.O"'I:...1...,0=".0::2--''-'-:-0.':-:05:'-..l...LL0:'..I:--'---,0'=.2-''---'--:0:':.5-'--LLUI':'0-L-,2:':.0:--'--:..L:"1.0:-'-.J...L:'.1'=0-"---:20:-...L..-L-'5'=0'w..J..JI:-!:0:-0--'--:"20~0-L--'-:5~00:-'--LLI'-'..0 k
I. TIME (m.1
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
~~:~
A train of periodical power pulses can be represented by the model
shown in Figure A. Using the model and the device thermal response, the normalized effective 'transient thermal resistance of
Figure 12 was calculated for various duty cycles.
n"n'
-----II
---l
11
I
I
~
:
I
I
I---l/f~
To find 9JCld. mulliply the value oblained from Figure 12 bV
the sleady slale value 9 JC.
Example:
The 2N6121 i. dissipetlng 50 watls under Ihe following conditions: tl = 0.1 mo. tp =0.5 mI. 10 =0.21.
Using Figure 12. al a pulse width of 0.1 ms and 0 = 0.2. Ihe
reading of rIll. 01 is 0.27.
The peak rise in junction temperature is therefore:
..T =rId X Pp X 9JC = 0.27 X 50 X 3.12 =42.20C
'----11
DUTY CYCLE 0 "Il·f"ij;
PEAK PULSE POWER' Pp
4-228
2N6186
thru
2N6189
10 AMPERE
MEDIUM-POWER PNP SILICON TRANSISTORS
POWER TRANSISTORS
PNP SILICON
· .. designed for switching and wide-band amplifier applications.
•
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = lOAdc
•
DC Current Gain Specified to 5 Amperes
•
Excellent Safe Operating Area
•
Packaged in the Compact, High Dissipation TO-59 Case
SO-l00 VOLTS
60 WATTS
•
Isolated Collector Configuration
•
Complement to NPN 2N5346 thru 2N5349
•
*MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
VCEO
VCS
VEB
IC
Collector· Base Voltage
Emitter-Base Voltage
2N6186
2N6187
80
80
2N6188
2N6189
100
100
Base Current
18
Total Device Dissipation @TC- 25°C
Oerate above 25°C
Po
6.0
10'
2.0
60
TJ, Tstg
-65 to +200
I Symbol I
I 8JC I
Max
2.91
Collector Current - ContinUOUS
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/oC
°c
343
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
I
I
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Unit
°cm
*Indicatal JEDEC Registered Data.
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
60
"
c;; 50
S
~
z
40
...~
30
r--....
0
<.;
en
i5
a:
w
3:
20
a..
10
...ci
10·32 UN F·2A
COATEO
" " '"
"""- ~
20
40
60
80
100
120
0.424
0.320
0.090
G
0.185
H
"~
0
B
C
E
140
160
~ :~:!:
-t;;~,.::~~~H~f-l
~
2.29
-I-"0",.O",90'-irr.1H
P
4.14
1.02
8.08
4.212
.5
Q
"~
180
200
R
S
T
All JEDEC dimensions and notes apply
Collector isolated from CISI.
TC, CASE TEMPERATURE (DC)
CASE 18Q.03
TO-59
4-229
2N6186 thru 2N6189
*ELECTRICAL CHARACTERISTICS ITC = 25 0 C, unless otherwise noted)
I
I
Fig. No.
Symbol
-
VCEOlsus)
Min
Max
80
100
-
-
100
100
2NS186,87
2N618B,89
-
10
10
2N618S,87
-
1.0
-
1.0
-
10
-
100
30
SO
30
60
20
40
120
'240
-
0.7
'1.2
-
1.2
2.0
30
-
-
300
-
1250
Characteristic
Unit
OFF CHARACTERISTICS
CoUeetor·Emitter SUstaining Voltage 11)
(lC = 50 mAde, IB = 0)
..
Collector Cutoff Current
IVCE,: 75 Vde. IB : 0)
IVCE : 90 Vde, IB : 0)
Collector Cutoff Current
IVCE : 75 Vde, VEBloff) = 1.5
IVCE: 90 Vde, VEBloff): 1.5
IVCE: 75 Vde, VEBlolt): 1.5
TC: 1500 C)
IVCE ,= 90 Vde, VBEloff) = 1.5
TC: 150o C)
Vde
2N6186,87
'2N618,8, B9
-
"Ade
ICED
2N6186,87
2N6188,89
12
Vde)
Vde)
Vde,
"Ade
ICEX
2NS188,89
Collector Cutoff Current
/tAde
ICS9
IVes : Rated VCS, IE : 0)
-
Emitter Cutoff Current
"Ade
IESO
=S.O Vde, Ie =0)
IVSE
mAde
Vde,
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 0.5 Ade, VCE
B
= 2.0 Vde)
(Ie: 2.0 Ade, VeE: 2.0 Vde)
(lC
-
hFE
2NS18S,BB
2N6187,89
2NS1B6, BB
2NS187,89
2N618S,88
2N6187,89
= 5.0 Ade, VCE = 2.0 Vde)
Collector-Emitter ~a~uration Voltage
9,10,11
(lC = 2.0 Ade, IS = 0.2 Ade)
(lC: 7.0 Ade, IS : 0.7 Ade)
Base·Emltter Saturation Voltage
(lC = 2.0 Ade, IS : 0.2 Adc)
(lC = 10 Ade, IS = 1.0 Ade)'
Vde
VCElsat)
10;11
Vde
VeEls.t)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
(lC = 500 mAde, VCE = 10 Vdc, 'Test = 10 MHz)
-
Output Capacitance
IVes: 10 Vdc, IE • 0,': 100 kHz)
7
Input Capacitance
7
IVSE = 2.0 Vde, Ie
=0, f ·
MHz
fT
pF
Cob
pF
Cib
100 kHz)
SWITCHING CHARACTERISTICS
Del.ay Time
Rise Time
Storage Time
Fall Time
IVee' 40 Vdc, VESloff) • 3.0 Vde,
(lC = 2.0 Adc, lSI = 200 mAde!
IVec - 40 Vde, IC = 2.0 Ade,
lSI = IS2 = 200 mAde!
2.3
td
tr
ts
If
2.S
100
100
2.0
200
~
-
ns
n.
"Sns
*Indlcates JEDEC Registered Data.
Il) Pulse Test: Pulse Width'" 300 "s, DUlY Cycle.'" 2.0%.
121fT = Ihfe l• fTest
FIGURE 2 -SWITCHING TIME TEST CIRCUIT'
FIGURE 3 - TURN·ON TIME
2000
+11.6 V
VCC
~~:7V
10~ I
I
INPUT
PULSE
....
'"oSw
:E
•
fr. tfC;: IOn5
D.C.' 1.0%
20
25.F
T
;::
02
TJ - 25°C
t,@VCC-OOV
500
62
Icllo ~ I~
I II
1000
-40 V
......
200
100
r-...
r-....
.......
t,@VCC'20V
,, <
O. 2
z
t;~
0' O.~
-I
~
0.1
D, I
;;..r
cr 0.07
W:E
~ ~ 0.0 ~
0.02
Z
~
-'e
0.0 I
0.01
>,.....
.I
-
.~---
""",
~ .... 0.03
o
~ SINGLE
PULSE Plpk}
0.p2
CI
=t
OOI-t,
I-"
-J-----+SINGLt PULSE
-
-t-t
O.O~
0.1
0.2
11111
i
O.~
0.3
1:1~.
i
0JC(t} , rl'} OJC
OJC' 2.910 cm Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHowr~
READ TIME AT'I
TJlpk} - TC' Plpk} OJCI'}
-'2--1
DUTY CYCLE. D"1/'2
II- I I i
0.02 0.03
+-
f-
'nJl'
~
O.O~
w~
,~,
-
.....-'
0.2
W 0
::t
,--
I-
1.0
2.0
3.0
5.0
II
II
10
20
30
~O
1111 III
100
200 300
~OO
1000
t. TIME OR PULSE WIOTH 1m,}
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
20
l'
10
a:-
~
T
i
de " " " ' -
.
1.0
/.100",1
. I·~'o
m'~
1",
I ' l".
~
There are two limitations on the power handling -ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 5 is based on TJlpk} = 200°C; TC is
variable depending on conditions. Second breakdown pulse limits
are valid 19r duty cycles to 10% provided TJlpk}
2000 C .
TJ(pkJ may be calculated from the data in Figure 4. At high
case temperatures. thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
~.
" 'Ii
Tp 2000C
SECOND BREAKDOWN LIMITED
'"
- - - BONDING WIRE LIMITED
o 0.5 - - - - - THERMALLY lIMITEO@TC - 2~oC
" ~
0.2
~ULSE D,UT,Y C~CLIE';;; 10:~
I
,~
_ O. I
RATED VCEO.
.I
"""'"
~ 0.05
t2N6186.87
2N6188.89
,
0.02
2.0 3.0
5.0
10
20
30
~O
1.0
VCE. CoLLECTOR·EMITTER VOLTAGE IVOLTS}
13
I:
~1.~:.'~
5.0
~ 2.0
_
'\,
r
t~'"
";f'
<
100
FIGURE 7 - CAPACITANCE versus VOLTAGE
FIGURE 6 - TURN-OFF TIME
2000
r-TTIT
t
1000 -
IBl"82
Icll8' 10
TJ' 2SOC
2000
1
1000
500
!w
'">=.:
....... .......
200
.e
No.
~20V
r-...
....... r--100
tfl.'VCC'80V
W
......
TJ'
z
Cib
700
""
I-
500
U
::«
t-....
u
u'
r-
r--.
300
200
0.2
0.3
0.5
1.0
2.0 3,0
IC. COLLECTOR CURRENT lAMP}
5.0
2~oC
u
50
20
0.1
II
r-. .......
10 •
4-231
r-..
i'- t-Jb
100
1.0
2.0
3.0
5.0
10
20 30
VR. REVERSE VOLTAGE IVOLTS)
~O
100
•
2N6186 thru 2N6189
FIGURE
200
z 100
DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
I.0
-
TJ'~C
in
- - - VCE' 2.0 V
- - - VCE'10V
.:::::::. t:--
~
~
~
a:
a
'"c
~
•
3
::
8 o.
O.S
1.0
2.0 3.0
IC. COLLECTOR CURRENT IAMPI
10
S.O
\
I
0
>
2.0
S.O
FIGURE 10 - "ON" VOLTAGES
1.4
f-TJ I•
:; 2.0
ffi
1.0
r'
VSElonl1i' VCE' 2.ti v
:;
I.S
1000 2000
J.
10~'C .TO HS'C
2S'C TO 100'C /1.....1":
I 11
S
-sS'C TO 2S'C
w
g; -0.5
--
I-
o
'"
> 0.4
~ -1.0
0.2
VCElsatl@ Iclis' 10
o
0.1
SOD
8VC FOR VCElsa,)
<3
~
O.S VSElsa'l1i' lellS' 10
.s
I!?
b:::;"'-
~ 0.6
SO
100
200
20
lB. SASE CURRENT {mAl
FIGURE 11 - TEMPERATURE COEFFICIENTS
2~'C
1.0
~,
10
-
-
.., 2.S
1.2
~o
-
2
~
0.3
\..
~ 0.4
'"
~
0.2
S.O A
\
~ O.S
20
10
0.1
2.0 A
O.SA
a:
I'-..
3D
TJ= 2S bj;
$! o.6
r--.l"-
-S~'C
50
II
II
11C' 0.2A
o. 8
o.7
:;
70
I-
III
o.9
!:;
o
2S'C
;;:
'"
8-
0.2
0.3
1.0
O.S
v
--
~
-1.5 f - - 8VB FOR V8E
I-
~ -2.0
-2.5
2.0
3.0
S.O
10
~ Ft-tSiOlrt
0.2
0.1
0.3
O.S
2.0
1.0
3.0
S.O
10
IC. COLLECTOR CURRENT lAMP)
IC. COLLECTOR CURRENT IAMPI
FIGURE 13 - EFFECTS OF BASE-EMITTER
RESISTANCE
FIGURE 12 - COLLECTOR CUT-OFF REGION
10- 4
S
J
/
TJ =17S'C
107
I
IC' 10 X ICES
"
-100'C
./
=
IDS
VCE-30V -
IC=2 X ICES
. IC' IC S
IC'ICES
-REVERSE
==!='2S'C
10-9
0.3
0.2
0.1
FORWARO
0.1
0.2
0.3
0.4
3
r--
(Typical ICES V.lues
10 ~FObtained From Fig. 12)
O.S
0.6
0.7
VSE. SASE·EMITTER VOLTAGE IVOLTSI
102
o
w
~
50
~
~
m
~
TJ.JUNCTION TEMPERATURE (OCI
4-232
~
w m
2N6190
thru
2N6193
5 AMPERE
POWER TRANSISTORS
MEDIUM-POWER PNP SILICON TRANSISTORS
· .. designed for switching and wide band amplifier applications.
Low Collector-Emitter Saturation Voltage -.
VCE(sat) = 1.2 Vdc (Max) @ IC = 5.0 Amp
PNPSILICON
•
DC Current Gain Specified to 5 Amperes
•
•
Excellent Safe Operating Area
Packaged in the Compact TO-39 Case for Critical Space Limited
Applications
.
80·100 VOLTS
10 WATTS
•
•
• Complement to NPN 2N5336 thru 2N5339
"MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
2NS190
2NS191
2NS192
2NS193
Unit
VeEO
ao
100
Vdc
Collector-Base Voltage
Vea
ao
100
Vdc
Emitter-Base Voltage
VEe
6.0
Vdc
Ie
5.0
Adc
Base Current
Ie
1.0
Adc
Total Device Dissipation@Tc=2SoC
Po
10
Watts
57.1
mw/oe
TJ. Tstg
-65 to +200
°e
Collector Current - Continuous
Derate above 2SoC
Operating and .Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Max
Thermal Resistance. Junction to Case
17.5
·Indlcates JEOEC Registered Data.
FIGURE 1 - POWER-TEMPERATURE DERATING
10
"" "" ""-
STYlE I:
PIN 1 EMITTER
2. SASE
3 COllECTOR
'" '"
MILLIMETERS
DIM
A
8
~
C
o
E
F
G
.......
"
40
80
120
160
"" ""'-
200
H
J
K
L
M
P
Q
R
MIN MAX
889 9.40
800 8.51
610 660
0.406 0533
0.229 3.18
0.406 0.48
4.83 5.33
0.711 0864
0.7311.02
1270
635
450 NOM
1.21
900 NOM
2.54
INCHES
MIN
MAX
0.310
0.335
0.260
0.021
0.125
0.019
0.210
0.034
0040
All JEDEC dlmlnsionund natHlpply.
TC. CASE TEMPERATURE (OC)
CASE 79·02
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
4-233
10-39
2N6190 thru 2N6193
• ELECTRICAL CHARACTER ISTICS
I
ITC' 2S0 C unle.. oth8...,.. noted 1
Fig. No.
Characteristic
Unit
Me.
OFF CHARACTERISTICS
CollectOf·Emitter Sustaining Voltage t 1)
(Ie .. 50 mAde, 'S • 01
Vdc
2N6190,2NG191
2N6192.2N6193
Collector Cutoff Current
".Adc
2N6190. 2NG191
2N6192.2N6193
(VeE" 75 VdC.la" 01
(VeE" 90 Vdc. Ie = 01
Collector Cutoff Current
(VeE";' 75 Vdc, VSEloffl ". 1.5 Vdcl
. (VeE "90Vdc. VSEloff) '" 1.5Vdcl
tVeE = 75 Vdc, VaEfoff) '" 1.5 Vdc.
•
100
100
12
/JAde
2N6190,2NG191
2N6192, 2N6193
2N6190.2NG191
10
10
1.0
2N6192.2N6193
1.0
2N6190.2N6191
10
10
TC "'50oCI
tVee = 90 Vdc. VSEloffl .. 1.5 Vdc.
mAde
TC = lsaGCI
Collector Cutoff Current
(Ves II 80 Vdc, Ie .. 01
(VCS'" 100 Vdc. Ie = 0)
".Adc
2N6192.2N6193
Emitter Cutoff Current
tVSE" 6.0 Vdc.IC = 01
p.Adc
100
ON CHARACTERISTICS (11
DC Current G.in
lie" 500 mAde, VeE = 2.0 Vdel
2N6'90.2N6192
2NG'91,2NG193
2N6190,2N6'92
2N61Q1,2N6193
2N619D,2N6192
2N6191,2NS193
lie" 2.0 Ade, VeE;; 2.0 Vdel
(Ie ;;
5.0 Ade, VeE;; 2.0 Vdcl
120
240
Coliector·Emitter Saturation Voltage
Vdc
lie'" 2.0Adc,IB = 0.2 Adel
(Ie" 5.0Adc.IB =0.5Adcl
0.7
1.2
Ba.-Emitter Saturation Voltage
lie'" 2.0 Adc, '8 - 0.2 Adcl
Vdc
1.2
1.8
lie;; 5.0 Adc. IB '" 0.5 Adcl
DYNAMIC CHARACTERISTICS
Current·Gain·Bandwidth PrOduct 121
lie'" 0.5 Adc, VeE;; 10 Vdc. fTest" 10 MHz)
MH,
Output Capacitance
IVeB" 10 Vdc. IE - D, f ... 100 kHz!
300
Input Capacit.,ce
IVBe .. 2.0 Vdc, Ie - D, f - 100 kHz)
1250
SWITCHING CHARACTERlsncs
Delay Time
Rise Tim.
(Vee" 40 Vdc. VSE(off) ,.. 3.0 Vdc.
Ie - 2.0 Adc. IS1 .. 0.2 Adcl
Storage Time
Fell Time
Nee" 40 Vdc. Ie
IS.
100
2.0 Adc.
102 - 0.2 Adcl
s
-Indicetes JEDEC Regittered Oet•.
11. Put .. T.n: Put.. Width :£300
(2) fT = I hf.1 • tTest
"'t. DUIV
2.0
-"""'"
Cvct.~2.0"
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - TURN ON TIME
2000
+11.6 V
VCC
-40V
PULSE
I
IlL II
Ir. tf< 10ns
D.C.-tO%
1--
r
ICIIB"0
TJ =Z5'C
t r @lVCC a 10V
0
62
1,@VCC=20V
20
3JV
•
JJ
l'
1000
~OV
;0",
INPUT
n,
"'
~
~
0
i'
82
100
0
lN91'
20
+2.3 V
...........
........!'-
lil!ll'lflj 3·7
II II
0.05
0.1
0.2
0.3
0.5
1.0
IC. COLLECTOR CURRENT IAMPI
4-234
2.0
3.0
5.0
2N6190 thru 2N6193
FIGURE 4 - THERMAL RESPONSE
1.0
>z
w
0.7
'"
UJ
>
c:(
a:
wz
0.2
~~
~
0.1
0, I
c <" 0.01
w,"
ffi
0.05
"''''
0.03
~
~
I-
:;;;;..
I--~
SINGLE'rLJl
PULSE Plpkl
1-
0.02
w~
~
8JC
~
0.05
-
0.02
SINGLE PULSE
0.02 0.03
0.05
0.1
0.2
=:
11.5 0 elW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ{pki - TC· P{pkl 0JcCtI
DUTY CYCLE, 0·'1/'2
I
0.01
.
tJ
0.01
-= om
t
8JC{II· r{II 8JC
I---
0.2
O. 3
I-u
tt
0·0.5
0.5
iii
0.5
1.0
2.0
5.0
3.0
I I I I I II
III
IIIII
0.3
20
10
30
50
100
500
200 30a
1000
I, TIME DR PULSE WIDTH {m,I
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
0
100 s
1.0ms
5.0
~
'"
!5
~_
1l
~
~
o. 5
o. 2
o. 1
...
J...>-f..
2. 01--- I- del
I. 0
5.0 m;"
~I""
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran·
sistor that must be observed for reliable oueration; i.e., the
....
i"-
TJ - 2000e
transistOT must not be subjected 'to greater dissipation than the
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
_ _ _ _ THERMALLY L1MITEO@TC'250 C
PULSE DUTY CYCLE.. IO%
-
8 0.05
curves indicate.
CURVES APPLY
I
0.0 1
1.0
2.0
BE;~
are valid for duty cycles to 10% provided TJ(pkl
200"C.
T J(pkl niay be calculated from the data in Figure 4, At high
case temperatures. thermal limitations will reduce the power that
can be handled to values less than the limitaitons imposed by
<
2N6192,2N6193
20
10
5.0
3.0
variable depending on conditions. Second breakdown pulse limits
::~~~,:NC:,~,
-I
0.02
The data of Figure 5 is based on TJ{pk) = 200"C; TC is
i'
second breakdown.
100
50
3D
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS!
FIGURE 7 - CAPACITANCE versus VOLTAGE
FIGURE 6 - TURN-ClFF TIME
2000
1000
i'"
2000
181 = 182
IC 18 ·,0
r-
TJ'25DC=~
~
I,
500
........
.....
0
I
20V
r-.
r!t@VCC ·80V
1'1'
0
1000
T =
Jib
;t--.
3D0
200
I'-
0
t2O
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
100
1.0
5.0
2.0
3.0
5.0
10
20
~
30
VR, REVERSE VOLTAGE {VOLTS!
IC, COLLECTOR CURRENT {AMPI
4-235
zJoc
700
500
!-....
I"- r-...
50
100
..
2N6190 thru 2N6193
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE 8 - DC CURRENT GAIN
200
.0
z
~
ffi
::::>
'-'
'-'
c
~
•
~~
·!S.CI
100
I"0
~
a:
r--..
-SS·C
0.1
0.2
0.3
1.0
2.0
3.0
\
\.
O. 3
8
'0 •1
o. 2
,\
t-...
I---
o
5.0
5.0
2.0
10
2.5
..e
2.0
>
.§ 1.5
.
--:::--
VaEI..')@ ICl1g • 10
0.6
VBEI.n) @VCE • 2.0 V
ffi
k:::::~
1.0
U
.-::::~
2S·C TO 100DC
$ 0.5
8
w
'"
1000
e0cI
100·C TO I15.C .....
e!
1.0
0
1000
II II
Flo~IVCEI~!)
<.>
TJ' 2S·C
1.2
0.8
500
FIGURE 11 - TEMPERATURE COEFFICIENTS
FIGURE 10 -ON VOLTAGES
1.4
2:
-
-
20
50
100
200
lB. BASE CURRENT ImA)
IC. COLLECTOR CURRENT lAMP)
~
5.0 A
\
O.6
o
~
II
0.5
TJ' 2S·C
~ o.4
VCE' 2.0 V _
VCE' 10 v.
0
2.0 A
O.SA
~ O. 5
t-r-. r-...
30
10
0.05
IC' 0.2A
'" O.7
~
70
I
II
II
I1111
~
o.9
o
~ o. 8
~~7S.C
~
w
> 0.4
....
~ -1.0
--
0.2
o
-SS.C TO 1SoC
g; -0.5
!;;:
0
VCEI,,!) @Ic/la' 10
0.05
0.1
0.2
1.0
0.5
0.3
2.0
V
3.0
!
-1. 5
i
-2.0
>-
5.0
eVB FOR VBE
-2.5
0.05
-S~Tr
I II
0.2
0.1
IC. COLLECTOR CURRENT lAMP)
~ 10- 5
0.5
1.0
2.0
3.0
5.0
FIGURE 13 - EFFECTS OF BASE·EMITTER RESISTANCE
I
'/
TJ =17S·C V
0.3
IC. COLLECTOR CURRENT lAMP)
FIGURE 12 - COLLECTOR CUT'()FF REGION
0:
-'-
VCe= 30 V -
I
107
IC' 10 X ICES
ffi
/
: 10-6
i'l
r--l00·C
a:
o
~
./
10-7
105
VCE'30V -
=
IC =2 X ICES
IC 'IC S
o
IC -ICES
I
'-'
8 _REVERSE
~10-
FORWARO
3 f-10
t==
i==+= 2S·C
10-9
0.3
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VBE. BASE·EMITTERVOLTAGE IVOLTS)
102
o
20
ITypicallCES V.lues
Obtained From Fig. 12)
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE IOC)
4-236
160
180
200
2N6211
2N6212
2N6213
2 AMPERE
'POWER TRANSISTORS
MEDIUM-POWER HIGH-VOLTAGE
PNP POWER TRANSISTORS
PNPSILICON
· .. designed for high-speed switching and linear amplifier applications
for high-voltage operational amplifiers, switching regulators, converters, inverters, deflection stages and high fidelity amplifiers.
225-350 VOLTS
35 WATTS
o Collector-Emitter Sustaining Voltage VCEO(sus) = 225 to 350 Vdc @ IC = 200 mAdc
• Second Breakdown Collector Current IsIb = 875 mAdc@VCE = 40 Vdc
o tf = 0.61ls Resistive Fall Time
• Usable DC Current Gain to 2.0 Adc
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation @ T C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
2N6211 i2N6212i2N6213
300
225
350
Unit
350
Vdc
I
I
.
...
.
275
VCB
VEB
IC
IB
Po
I
I
400
6
2
5
1
35
0.2
..
...
-65 to +200
TJ. Tstg
Vdc
Vdc
Adc
Adc
Watts
W/oC
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
6JC
Indicates JEDEC Registered Data.
I
1
I
Max
5.0
J
FIGURE 1 - FORWARD BIAS SAFE OPERATING AREA
10
5.0
~ 2.0
ffi
lOms
1.0
~ 0.5
"-
de
i:l
~ 0.2
-
1'.
"-
Banding Wile Limit
"o. 1 _ _ _ _ Thermal Limit
(SinglaPulsa)
0.05 _ _ _ _ Second Breakdown Limit
i!
2N6211
0.02
2N6212
2N6213
0.0 I
20
50
100
10
~
a
.'
J.Op
200",
..,..1 ... ,
~
Unit
°C/W
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
B 11.94 12.70 0.470 0.500
C
6.35 8.64 0.250 0.340
0
0.71 0.86 0.02B 0.0 4
E
1.27
1.91
0.050 0.075
F 24.33 '4.43
0.958 0.962
G 4.83 5.33 0.190 0.210
2.67 0.095 0.105
H 2.41
J 14.4B 14.99 0.570 0.590
K 9.14
0.360
P
1.27
0.050
Q
3.86 0.142 0.152
3.61
S
8.89
0.350
T
3.68
0.145
15.75
U
0.620
All JEDEC Dimensions and and Notes Apply.
CASEao.o2
TO·66
"-
"
200
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
500
1000
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le-VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) R 200; TC is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown. (See
Figure B).
4-237
2N6211, 2N6212, 2N62,13
ELECTRICAL ,CHARACTERISTICS ITC a 250 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
·Collector-Emitter Sustaining Voltage 11)
IIc = 200 mAde, IS = 0)
Symbol
VCEOlsus)
2N6211
2N6212
2N6213
.'
·Collector-Emitter Sustaining Voltage
IIc ~200 mA, VSE = -1.5 V, L = 10 mH)
Max
Min
-
Vdc
-
-
VCERlsus)
2N6211
2N6212
2N6213
-Emitter-Base Breakdown Voltage (1)
liE = 0.5 mAde, IC =0)
Vdc
-
275
350
400
2N6211
2N6212
2N6213
Unit
-
225
300
350
VCEXlsus)
·Collector-Emitter Sustaining Voltage 11 )
IIc = 200 mA, IS = 0, RSE = 50 n
•
I
250
325
375
Vde
-
Vde
VESO
2N6212/13
2N6211
liE =1.0 mAde, IC =0)
·Collector Cutoff Current
IVCE a 250 Yde, VaEloff)
,ICEV
= 1.5 Vde, TC = 25°C)
ITC = 100°C)
IVCE = 315 Vde, VaEloff) = 1.5 Vde, TC = 25°C)
ITC = loooC)
IVCE a 360 Vde, VSEloff) = 1.5 Vde,Tc = 25°C)
ITC = 100°C)
Coli actor Cutoff Current
IVCE =150 Vde, IS = 0)
. -Emitter Cutoff Current
!VEa ~ 6.0 Vde, IC = 0)
-
6.0
6.0
mAde
-
-
0.5
5.0
0.5
5.0
0.5
5.0
-
5.0
-
1.0
0.5
0.5
--
-All Types
ICED
lEaD
2N6211
2N6212
2N6213
mAde
mAde
-
'-
'ON CHARACTERISTICS 11)
DC Current Gain
IIi:: = 1.0 Ade, VCE = 2.a Vde)
, IIc ~ 1.0 Ade, VCE = 3.2 Vde)
IIc = 1.0 Ade, VCE = 4.0 Vde)
Collector-Emitter Saturation Voltage
IIc = 1.0 Ade, IS = 125 mAde)
-
hFE
2N6211
2N6212
2N6213
VCElsatl
2N6211
2N6212
2N6213
AU Types
Base-Emitter Saturation Voltage
IIc = 1.0 Ade, I a = 125 mAde)
VaEI.atl
10
10
10
100
100
100
-
1.4
1.6
2.0
1.4
Vde
-
Vd.
DYNAMIC CHARACTERISTICS
·Current Gain-Bandwidth Product (2)
IIc = 200 mAde, VCE a 10 Vde, f test = 5.0 MHz)
Output Capacitance IVca
'SECOND SREAKDOWN
= 10 Vde, IE = 0, f -
1.0 MHz) ,
·Second Breakdown Collector Current with Base Forward Biased
t = 1.0 sinon-repetitive) !VCE = 40 Vde)
'SWITCHING CHARACTERISTICS
IV CC
lal
=200 Vd~,
IC = 1.0 Ade,
=la2 =0.125 Ade)
·Indicates JEDEC Registered Data ..
11) P'ulse Test: Pulse Width .. 300 loiS, Duty Cycle .. 2.0%
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
Input: HeWlett-Packard
V BB
Model No. 214A.
or equivalent
= +6 V
ijr+-+::-~---,
':' 100lolF
Input from Pulse Generator
·Adjult RS for 182 and RC for
(Pulse Duration"" 20 ",I.
Rap. Rate = 200 'Hz)
Ie
"'181 and 182 measured with Tektronix Current
Probe P6019 and Type 134 Amplifier, or equivalent
,4-238
2N6211,2N6212,2N6213
FIGURE 3 - DC CURRENT GAIN
300
200
I...
TJ'ISO"C
2SoC
z
100
....
SO
a:
a:
30
~
..,a
c
~
5
~
~
;;: 70 I=-
CI
FIGURE 4 - COLLECTOR SATURATION REGION
--VCE"2.0V
- -VCE" 10V
J)2S~
1.0
0.8
"'
CI
--55"C
~
,
... ",
r-;:
20
~
I\:
~
a:
0.6
~
lllOOmA
750mA
!
0.4
"'
\
7.0
S.O
~..,
O.2
3.0
20
>
~
o
10
50
500 700 1.0 k
70 100
200 JOO
IC, COLLECTOR CURRENT (mAl
2.0k
ti~l
..,
2.0
1.0
""
i-
20
10
5.0
IB, BASE CURRENT (mA)
~
"'~
103
a:
8
!J
10
~
2
10 I~
100
c-
+0.2
REVERSE
2S"C
+0.1
FORWARD
VCE' 200 V-=-
f
j5S0Y10125 CI
-0.4
.{J.5
~
-1. 50V~
-0.5
-2. 0
-2.5
2.0
.-1-
250& 10 1750C
-1.0
ffi
.;
25 0C 10 i7££;
+0.5 .OVC to, VCE(IIt)
~
"'i
./
-0.1
-0.2
-0.3
VBE, BASE·EMITTER VOLTAGE (VOLTS)
.500
+1.5
8
I-- 100°C
c
..=
200
~ +1.0
/
::>
~
so
100
·APPLIES FOR (elIB" hFE/4
~ +2.0
/
!104
./
\
.....
FIGURE 6 - TEMPERATURE COEFFICIENTS
+2.5
TJ' ISOoC
11
IflllloojA
O.S
FIGURE 5 - COLLECTOR CUTOFF REGION
liP
./
...... II I
-
c
JO
SOOmA
2S0mA
I
JO
-IS50~ 10 ~~C
f-
so
I
200 300
500 700 1.0 k
70 100
IC,COLLECTOR CURRENTlmA)
2.0 k
FIGURE 8 - POWER DERATING
FIGURE 7 - BASE CUTOFF REGION
100
g
~
0
a:
~
"'"
""- r--..............
40
~
20
.........
o
o
VBE, BASE·EMITTER VOLTAGE (VOLTS)
20
40
60
80
100
120
TC, CASE TEMPERATURE 10C)
4-239
.....
THERMAL ......
DERATING """"
a:
+0.2
.... r-.-
r--...
z
.
.............
i'..
60
CI
~.
SECJNOL
BREAKDOWN DERATING
140
"' "
160
180
200
•
2N6211,2N6212,2N6213
FIGURE 9 - CURRENT-GAIN-BANDWIDTH PRODUCT
i:
70
VCE" 10V
TJ' 25 0 C
~
ti
[',
50
~
i=
CI
~
/
~ 20
..'"
ffi..
a
......
O. 3
/
30
O. 2 .....
I'
I'
1
;:.0.0 7
- 0.05 - Id@
I
-
10
5.0 7.0
200
50 ·70 100
20
30
lC. COLLECTOR CURRENT (mAl
10
300
500
30
~
1.0
!
.....
r-
D. 7
"" O. 5
IcIlB'10~
TJ' 250C-
-
o. 1
20
~ 300
:i! 200
1" ....
o. 2
SO
30
70
100
...
r-2.0k
T~' ~5bJ
Cib
r--
~. 70
30
20
0.1
2.1 k
500 700 1.0 k
:--..
~ 100
50
300
-
70 100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT (mAl
~
...
If
200
50
~ 500
Is
0.3
I'-
~.
1000
700
-i""-
.'
V
2000
VCC' 200 V
IcI1B-S.O-=
3.0
........
FIGURE 12 - CAPACITANCE
FIGURE 11 - TURN-OFF TIME
10
7.0
5.0
.......
II
0.0 1
20
1.0
2.0
i
0.03 - VBi'"T 0
1
0.02
.I
VCC' 200 V
fCIlB' 5.0
fCIIB·l0
TJ' 25 0 C
I....
:2 o. 1
Z
.f
,
o. 5
./
:::I
CI
•
FIGURE 10 - TURN-ON TIME
1. O~
I,
O. 7
Cob
.
0.2
0.5
fC. COLLECTOR CURRENT(mAI
1.0
2.0
VR. REVERSE
5.0
VOLTAG~
10
50
20
100
(VOLTSI
FIGURE 13 - THERMAL RESPONSE
w
u
z
1.0
0.7 ~0'0.5
0.5
~
0.3
:i
0.2
~
iii
ffic
~~
zC
~
/
0.1
0. 1
I
0.01
"'CI
: ~ 0.05
~
0.03
;:
0.02
~w
0.2
=
-
Inn
I::::;:!~
~
L
TJ
~
::: f:o.iii
.A'
~
::E=
.==
DUTY CYCLE. D "1"2
X
SINGLE PULSE
0.05
0.02
0 CURVES APPLY FOR POWER PULSETRAIN SHOWN
REAOIIMEAT"
TJ(pkl' TC,Plpkl RIIJCIII
11'2
./
RIIJC(II·,(IIRoJC
RIIJC" 5.0DC/W
P(pkl
0.05
0.02
0.0 1
0.01
....
I 111111
0.1
0.2
0.5
1.0
2.0
I. TIME (msl
4-240
5.0
10
I I
20
50
100
200
500
1000
2N6233 (SILICON)
2N6234
2N6235
5AMPERE
POWER TRANSISTORS
HIGH VOLTAGE NPN SI LICON TRANSISTORS
. useful for high·voltage medium power applications such as
switching regulators.
225.275.325 VOLTS
50 WATTS
•
High Coliector·Emitter Sustaining Voltage -VCEO(sus) = 225 Vdc -- 2N6233
275 Vdc -- 2N6234
325 Vdc -- 2N6235
•
DC Current Gain -- hFE =.25 to 125 -- IC = 1.0 Adc
8
Low Coliector·Emitter Saturation Voltage
VCE(sat) = 0.5 Vdc (Max) @ IC = 1.0 Adc
•
High Frequency Response -- fT = 20 MHz (Min)
,. Fast Switching Times
tr = 0.5 JJ.s (Max)
ts = 3.5 JJ.S (Max)
tf = 0.5 JJ.S (Max)
NPN SILICON
•
1.0 Adc --
@
*MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
Vce
Emitter-Base Voltage
VEe
Collector Current - Continuous
IC
2N6233 2N6234 2N6235
Unit
225
275
325
Vdc
250
300
350
Vdc
-
6.0-
Vdc
-5.0-
Adc
_10--_
Peak
Base Current
Ie
Total Device Dissipation @ TC
= 2SoC
Po
Derate above 25°C
Operating and Storage Junction
Temperature Range
_2.0_
---50-0.286
-65 to +200
TJ. Tstg
U
_
--F--I
W/oC
V,
r~ J\
f'...
1'-..
r-...
0
~
"'........ V
-
......
0
"'-.
0
40
R
MILLIMETERS
DIM MIN MAX
8 11.94 12.70
C
6.35 B.64
D
0.71 0.B6
1.91
E
1.27
F 24.33· 24.43
G 4.83 5.33
2.67
H 2.41
J 14.48 14.99
9.14
K
1.27
P
Q
3.61
3.86
S
8.89
3.68
T
15.75
U
"'" "'-. K
0
" ~T I II
S
FIGURE 1 -- POWER TEMPERATURE DERATING
0
K
I
Watts
-Indicates JEOEC Registered Data.
50
0
STYLE 1:
PIN 1. BASE
2. EMITTER
- J - 1 CASE: COLLECTOR
1
Thermal Resistance. Junction to Case
i
SEATING PLANE
I
Characteristic
--
L'~'
' _____ ~11-I
E
Adc
°c
THERMAL CHARACTERISTICS
f
r--AB
80
120
TC. CASE TEMPERATURE lOCI
160
"
INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.D75
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.152
0.350
0.145
0.620
-
All JEOEC Dimensions and and Not~s Apply.
200
4-241
CASE 8O'()2
TO·66
2N6233,2N6234,2N6235
·ELECTRICAL CHARACTERISTICS (TC' 2SoC unle.. otherwise noted)
Symbol
Characteristic
Min
Max
226
275
326
-
-
1.0
1.0
1.0
-
1.0
Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaininy Voltage (1)
VCEOlsusl
2N6233
2N6234
2N6235
(Ie:: 20mAdc.la "" 01
Collector Cutoff Current
(VCE" 225. Ie' 0)
(VCE • 275. Ie' 0)
(VCE • 325. Ie' 0)
mAde
ICED
2N6233
2N6234
2N6235
Collector Cutoff Current
(VeE'" 250 Vdc, VEBloff)
TC = 150°C)
'CEX
1.5 Vdc.
2N6233
(VeE'" 300 Vdc, VEB(offl = 1.5 Vdc,
2N6234
.=
TC::: 150°C)
{VCE • 350 Vdc. VEB{off} • 1.5 Vdc.
TC·1500C)
2N6235
Collector Cutoff Current
{VCB' 250 Vdc. 'E "01.
{VCB' 300 Vdc. 'E • 01
•
.ICBO
(Vea'" 350 Vdc. IE .. 01
mAde
1.0
1.0
mAde
-
2N6233
2N6234
2N623S
Emitter Cutoff Current
(VBE" 6.0 Vdc. IC • 0)
Vdc
'EBO
--
0.1
0.1
0.1
-
0.1
mAde
ON CHARACTERISTICS ,1)
DC Current Gain
(Ie = 0.1 Adc, VeE -= 5.0 Vdcl
(lc' 1.0 Ado. VCE • 5.0 Vdc)
(Ie'" 3.0 Adc, VeE = 5.0 Vdcl
Collector-Emitter Saturation Voltage
(Ie = 1.0Adc.IB "" 0.1 Adcl
lie'" 5.0 Adc, 18'" 1.0 Adcl
Base Emitter Saturation Voltage
(Ie = 1.0Ade,ls '" 0.1 Adc)
(Ie :.: 5.0 Adc. Ie :; 1.0 Adcl
Base-Emitter On Voltage
(Ie = 1.0 Adc. VeE = 5.0 Vdcl
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (2)
{Ie == 0.25 Adc, Vee'" 10 Vdc. f test '" 10 MHzl
Output Capacitance
(Vee'" 10Vdc,IE
~o, f
""0.1 MHz)
SWITCHING CHARACTERISTICS
Rise Time
(Vee'" 200 Vdc, Ie "" 1.0 Adc, I B '" 0.1 Adci
Storage Time
(Vee == 200 Vdc, Ie .,. 1.0 Adc.ISl "" 102": 0 1 Adcl
Fall Time
(Vee"" 200 Vdc, Ie ~ 1.0 Adc,IS1;: IS2
==
0.1 Adcl
-Indicates JE DEC Registered Data.
111 Put" Tett: Pul. Width" 300 ./.IS, Duty Cycle ~ 20%.
(2)
fT=lhtejoftest
. FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
3.0
VCC -200
VCC =200 VIC/le"lO , TJ=2SoC
2.0
r-
RC -200
1.0
SCOPE
Ir
~ 0.5
......
w
'" 0.3
;:
... 0.2
tr.lf '"
.........
lOns
DUTY CYCLE", 1.0%
0.1
·5.0 V
i/
Ii"-
~
r.......
Id@VeE(ofl)'=O
0.0 5
FOR INFORMATION ON FIGURES 3 and 6
RS AND RC ARE VARIED TO OBTAIN
0.03
0.05
DESIRED CURRENT lEVEl..!; 0, DIS·
CONNECTED AND V2 REDUCED TO 5
VOLTS FOR Id MEASUREMENT.
0.1
0.2
0.3
0.5
1.0
IC. COLLECTOR CURRENT (AMP)
4-242
2.0
3.0
5.0
2N6233,2N6234,2N6235
FIGURE 4 - THERMAL RESPONSE
1.0
~
0.7
Z
0.5
~
0.3
~
D- 0.5
-
....10 0.2
«w
::EN
~~ O. I
0.05
~ ~ 0.07
in
0.03
I-
0.02
0.1
~,?
-f-
f..-
....... ~
~
0.0 I
0.02 0.03
...M
~
~-l
D'JTYCIUE.D-tlttl
D CURVES APPLY FOR POWER
PULSE TRAIN SHOil
READ TIME AI II
I I I I
TJ(pk) - TC = P(pk) OJf(t),
-
SINGLE PULSE
I0~01
III
0.1
0.05
0.2
,_
aJC(I) = ,(I) OJC _
OJC - 3.5 0C/W Max
-::;;; """po
0.02
~::. 0.05
~
--
'.'.1'"
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
100
50
200
300
500
I
=
-:-
1000
2000
I, TIME (ms)
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
10
100",
5.0
1.0 ms
~
="",..
~
a
20
=i= T~ =200 0C
1.0
0.5
_
de' ....
"-
.l
"-
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; Le., the transistor
must not be subjected to greater dissipation than the curves indi·
cate.
SECOND BREAKDOWN
a:
~
,
5.0 ms
I LIMITED
I
I III
LI-;1-..! BONDING WIRE
0.2
O. I
"-
""l I"-
I
LIMITED
THERMALLY L1MITED@TC=25 0C
8 5
~ 0.0
2N6233
2N6234
0.02 -Httt_curvesAPPlv Bel0"1
I
Rated VCEO
2Nf235
0.0
I III
5.0 7.0
10
20
30
50
70
100
The data of Figure 5 is based on TJ(pk) = 2000 C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) :::s;;; 200°C. T J(pk) may be
calculated from the data in Figure 4. At high ·case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
t"1
nn
200
300
500
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 6 - TURN·OFF TIME
FIGURE 7 - CAPACITANCES
1. 0
200 01--
5. 0
3. 0
2.0
]
Is.
......
~ 1.0
;:
-
VCC - 200 V
IclIB = 10
IBI = IB2
TJ = 25 0C
III
~
.e
Ul
2lU
-
Cjb
50 0
w
u
..........
z
t-""
~ 200
~
_ 10 0
O. 5
........
O. 3
0.2
O. I
0.05
r- -r--.,
1000
........ r-,..If
0
Cob
"I.
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
0.2
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
4-243
50
100
20D
•
2N6233,2N6234,2N6~35
FIGURE 8 - DC CURRENT GAIN
400
200
TJ~
z
<
to
....
z
w
a:
a:
=>
...,
...,
100
70
W
\
!:lo
~
TJ = 25 0C
1.6
~
IC = 0.5 A
o
> 1.2
""l,
25°C
40
-
20
_r--~
10
-55°C
4.0
0.05 0.07 0.1
0.2
~
~,
- ...... ~ I''\, ,
7.0
0.3
0.5 0.7
~_
\
0.4
Q
,~
W
.~
2.0
3.0
5.0
0
5.0
\
"-
10
f'.
20
50
FIGURE 10 - "ON" VOLTAGES
I
_ 1.0
!:l
2.
w
/'
~
Y //
"
--, "'-"'"
~
I
>
,; O.4
25 0C to 150~
VCE(.. t)@IC Il B=5.0
0
0.05
0.1
0.2
0.3
0.5
--
1.0
5000
...,
Q
~
./
I
2.0
3.0
.,;
~vr FOR VBE
w
.... -2.0
-2.5
0.1
0.05
5.0
I
-5-:tOtJ- - -
. a.. -1.5
'"
I
250clol~ ;;t!-;;
-0.5
~ -1.0
/
/,.
-~ -7
'OVC FOR VCE(sa!)
:::>
o. 2
2000
+1.5
~ +0.5
VBE(sat)@ICIIB=5.0
Q
1000
"APPLIES FOR Icllo < hFE/4
'" +1.0
E
:;..-
:; O.6
500
C3 +2.0
3;
.?' / '
o.8
200
FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5
VBE@ VCE • 2.0 V
5.0 V
100
lB. OASE CURRENT (rnA)
I.4
TJ = 25°C
3.0 A
0.8
IC. COLLECTOR CURRENT (AMP)
I. 2
2.0 A
o
.~
1.0
I.U A
~
~
.c
•
J
2.0
w
to
Q
...
_ VCE 5.0 ~
VCE = 2.0 V
-
.........
FIGURE 9 - COLLECTOR SATURATION REGION
_
'I 'II
II II
IC. COLLECTOR CU RRENT (AMP)
0.2
0.5
0.3
1.0
2.0
3.0
5.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 13 - BASE CUT·OFF REGION
FIGURE 12 - COLLECTOR CUT.oFF REGION
102
104
TJ = 150°C
103
!....
z
w
a:
a:
102
....a:
101
~
....
100
:::>
TJ = I~OOC
10JOC
./
!....
./
550C:::;;;
=
z
w
a:
a:
250C~
:::>
...,
1000C
100
!
Q
!f!
Q
~
10 I
550C
10- I
10-1
250C
10-2 ~EVERSE
-0.1
-REVERSE
FORWARD
+0.1
+0.2
+0.3
+0.4
10- 2
-0.1
FORWARD
+0.1
+0.2
+0.3
VBE. BASE·EMITTERVDLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
4-244
+0.4
2N6249
2N6250
2N6251
HIGH VOLTAGE NPN SILICON POWER
TRANSISTORS
15 AMPERE
POWER TRANSISTORS
· .. designed for high voltage inverters, switching regulators and line
operated amplifier applications. Especially well suited for switching
power supply applications.
•
•
•
•
NPN SILICON
200, 275, 350 VOLTS
175 WATTS
High Voltage Breakdown Rating
Low Saturation Voltages
Fast Switching Capability
High ES/b Energy Handling Capability
•
MAXIMUM RATINGS
Symbol
2N6249
·Collector-Emitter Voltage
VCEOl,u,1
200
275
·Collector-Emitter Voltage
Rating
2N6250 2N6251
Unit
350
Vdc
Vdc
Vdc
VCERI,u,)
225
300
375
"'Collector-Base Voltage
VCB
300
375
450
Emltter·B~se
VEB
6.0-
Vdc
IC
ICM
IB
IBM
IE
IEM
15
30
Adc
10
20
Adc
Voltage
Collector Current
Continuous·"
Peak
Base Current
Continuous·
Peak
Emitter Current -- Continuous
Peak
..
25
50
175
1001.0-
Po
Total Power Dissipation@Tc=250C
@TC=1000C
Derate above 2SoC"
·Operating and Storage Junction
TJ,T stg
Adc
Watts
W/oC
°c
- - - -65 to + 2 0 0 -
Temperature Range
JF"~'
le~K
SE~TI~(~
PLANE
THERMAL CHARACTERISTICS
Charactoristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for
Symbol
Max
Unit
ROJC
TL
1.0
275
°CIW
°c
Soldering Purposes: 1/8" from Case
for 5 Seconds
• Indicates JEDEC Registered Data.
"·JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
FIGURE 1 - POWER DERATING
100
0
"
~
.......
"'" '" I"--..f'." ..........
'"
THERMAL
DERATING
0
SECONO BREAKOOWN
DERATlNG-
A
B
............
I'-
"""
......
"
0
o
o
40
DIM
120
80
TC. CASE TEMPERATURE 10C)
160
........
6.35
0.97
F
G
H
29.90
10.67
5.21
16.64
11.18
3.84
K
Q
'"
200
4-245
-
C
D
E
J
'"
MilLIMETERS
MIN
MAX
R
-
-
39.37
22.23
11.43
1.09
3.43
30.40
11.18
5.72
17.15
12.19
4.09
26.67
INCHES
MIN
MAX
0.250
0.03B
1.177
0.420
0.205
0.655
0.440
0.151
-
CASE 11·03
TO·3
1.550
0.875
0.450
0.043
0.135
1.197
0.440
0.225
0.675
0.480
0.161
1.050
I
2N6249,2N6250,2N6251
*ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.I
I
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
Collector-Emitter Sustaining Voltage (Table 1)
•
200
275
350
-
225
300
375
-
Collector Cutoff Current
-
5.0
10
-
5.0
5.0
5.0
Vde
VCERlsusi
2N6249
2N6250
2N6251
IIc = 200 rnA,
Vde
VCEOlsusi
2N6249
2N6250
2N6251
IIC=200mA,IB =01
mAde
ICEV
IVCE = Rated VCER, VBEloffi = 1.5 Vdel
IVCE = Rated VCER, VBEloffi = 1.5 Vde, TC = 1250 CI
Collector Cutoff Current
mAde
ICEO
2N6249
2N6250
2N6251
IVCE = 150 Vde, IB = 01
IVCE = 225 Vde, IB = 01
IVCE = 300 Vde, IB = 01
-
Emitter Cutoff Current
1.0
mAde
5.B
0.3
-
Vde
2.5
-
10
B.O
6.0
50
50
50
-
1.5
1.5
1.5
lEBO
IVEB = 6.0 Vde, IC = 01
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward
biased t = 1.05 (non-repetitive)'
IVCE = 30 VI
IVCE = 100 VI
Second Breakdown Energy yvith base reverse biased (Table 1)
IIc = 10 A, VBEloffi = 4.0 Vde, L = 50l'HI
ISlb
ESlb
mJ
ON CHARACTERISTICS III
DC Current Gain
-
hFE
IIc = 10 Ade, VCE = 3.0 Vdel
2N6249
2N6250
2N6251
Collector-Emitter Saturation Voltage
VCElsati
IIc = 10 Ade, IB = 1.0 Adel
IIc = 10 Ade, IB = 1.25 Ade
IIc = 10 Ade, IB = 1.67 Adel
2N6249
2N6250
2N6251
Base-Emitter Saturation Voltage
IIc = 10 Ade, IB = 1.0 Ade
IIc = 10 Ade, IB = 1.25 Adel
IIc = 10 Ade, Ie = 1.67 Adel
2N6249
2N6250
2N6251
Vde
-
VBElsati
Vde
-
2.5
2.5
2.5
-
2.0
I'S
3.5
I'S
1.0
I'S
-
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 1.0Ade, VCE = 10 Vde, f test = 1.0 MHzI
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 I
AiseTime
Storage Time
IVCC = 200 Vde, IC = 10 A, Duty
Cycle .. 2.0%, tp = 100 I'sl
tr
IIBI = IB2 = 1.0 Adel 2N6249
IIBI = IB2= 1.25 Adel 2N6250
IIBI = IB2 = 1.67 Adel 2N6251
ts
Fall Time
tf
• Indicates JEDEC Registered Data.
(1) Measured on a curve tracer (60 Hz full-wave rectified sine wave!.
4-246
-
2N6249,2N6250,2N6251
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEO(susl
+60 V
+6
o..s-L
,,0
-z
0
U
39
av
IB1'20A
:=E~
O~
'---r
~t
ESib
SWITCHING
p
50
~1
39
'"z
.... 2
RESISTIVE
VCER(sus)
+10 V
'i' "5 V
1
~~(,",
50
~'
1
o..IL 4V~
~
51
12
"F
-c:
-=
iC=10A
PW"" 100,/.15
t,lO.; 5 ns
tf ~ 50 n5
Duty Cycle":: 2%
....
'"
-'"
:>:>
u-'
LeOI! '" 42 mH
Reoll '" 0 7 .n, fa = 60 Hz
Vee'" 0 to sq V
!!: ..
u>
~cOlr '" 14 mH
lcolr : 50 J.lH Vee"" 115V
RCOII -' 0 05 n
Vee"'" 0 to 50 V
fa'" 60 Hz
Reoll - 0 2 u
INDUCTIVE TEST CIRCUIT
r
TUT
'"5....
U
a:
U
V:sLT
5....
2
=
NOTE
1 1
t 1 Adjusted to
TVCC
VCE
Ie ""
Obtam
ICHpy\
0.1
Set IC(pkl to Obt<1I1l
RESISTIVE TEST CI RCUIT
OUTPUT WAVEFORMS
1
I ,RColl
I
I
I :LCOII
I
L J
lN4937
1
Vee'" 200 V
RL = 20 Sl
I
I-,,~ tll--
n
t
t200 V
Ie
20
LeollOCpkl
DC
Current
11 "" - vee
1
Probe
0---<
TUT
3
24
.t
C
=
25
200 mA at VCEO(sus) Equal to Rated Value
-60 V
Adjust VC1amp Voltage for VCEO(sus) Rated Value.
FIGURE 2 - THERMAL RESPONSE
ZoJChl = rId ROJC
ROJC" l.ooC/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME ATIJ
TJI,k) - TC' PI,k) Z'JCII)
02
1.0
05
20
50
10
10
50
100
200
500
I. TIME (ms)
FIGURE 3 - ACTIVE·REGION SAFE
OPERATING AREA
30
20
.....
"
·\4.-H+ . . . · f""'\..1\1
de
I
\TC'25 0 C-'
TC' 100oC""'-
i
1' ...
1
1\.'\
I II
5
Te =25 0e Unless Noted
3 ___ BondmgWlre Limit
Thermal limit. Single Pulse
2
- - Second Breakdown limit
_.-
50
"'
20.~_
_""OOp.s
500.,
"
m' "'" :"'\.
"
-.....::.-.. r-..
~-.....::: ~ :--
,
1
2N6249
2N6250
2N6251
0.05
0.03
5.0
I--l
1.0
10 mspt:ms
,
0
o
o
o
,
N
7.0
10
20
30
50
70
100
200
300
500
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI
4-247
There are two limitations on the power handlmg ability
of a transistor: average Junction temperature and second
breakdown Safe operatmg area curves Indicate Ie-VeE
limits of the transistor that must be observed for reliable
operation; I.e., the transistor must not be subjected to
greater diSSipation than the curves mdicate.
The data of Figure 3 IS based on Te = 25°C. TJfpk)
IS variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when Te ~ 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 3 may be found
at any case temperature by using the approprtate curve on
Figure 1.
TJ(pk) may be calculated from the data in Figure 2.
At high case temper3tures. thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown.
10k
•
2N6249,2N6250,2N6251
DC CHARACTERISTICS
FIGURE 4 - DC CURRENT GAIN
FIGURE 5 - COLLECTOR SATURATION REGION
S 2.0
100
z
0-
lD
2~OC
=>
'-'
'-'
20
'I
'"
~
~
•
~ 1.6
."
7.0
IIII
05 0.7 1.0
O.l
c
~ T. 2
;e
3.0
~_
7.0
~
"
>
20
10
0.4
-TJ' 15°C
~ 1.0
-
c
I I
VOE("I)@ ICIIO' 5.0
w
'"~
0.6 f:="VOElonl@ VCE' 3.0 V
c
>
>' 0.4
0.2
1.0
0.5
1.0
++
0.3
f1r IHo
"' 1.5
~
U
~
13
0.5 0.7
1.0
1.0
~ Ih~Ell
'"
-3.0
2.0
3.0
III
III
5.0 7.0
«
L
J-l-
-0.5
, 25.'C
~ -1.5 I-- OVO for VOE
20
/
-550C 10 250C
~ -1.0
10
~
Tr1
·OVC for VCE( .. I)
0.5
-
0-
5.0 7.0
J
2~OC!0 Ilooic
I
w
~
I I I_II I II
0.1 r--- VCEI"I)@ ICIIO' 5
0.3
,..
-
!
/'
.....- f..--
I I 111111
0.1
2.5
~ 2.0 I--
t.:I
.h
?! 0.8
\
FIGURE 7 - TEMPERATURE COEFFICIENTS
I I
I I
\
10. OASE CURRENT lAMP)
FIGURE 6 - "ON" VOLTAGE
1.1
I~A
\.
0
0.07 0.1
IC. COLLECTOR CURRENT (AMP)
1.4
10A- I--
\
\
O.B
13
5.0
i.OA-
c
1\,:,-
VCE'l.OV
I VC,E = 10lV
1.0
-
IC' 2.0A
~
1-
10
J
~
I.....
~
-55°C
5.0
0.1
t-...
..:.:::: ~~
I
c
i
~
..,...,.,
50
;(
~J.J50J
c
TJ'1500C
70
~ -2.0
-2.5
0.1
I
O.l
0.5 0.7
IC. COLLECTOR CURRENT lAMP)
I2.0
1.0
1.'150~C
U
..........
-550 C 10 250C
I III
3.0
5.0 J.O
10
20
IC. COLLECTOR CURRENT (AMP)
RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN·ON TIME
3.0 k
2.0k
r-.
...
VCC= 200V
-
ICI+~ : ~5~t -
Ir
t'-...
1.0k
FIGURE 9 - TURN·OFF TIME
10k
J.Ok
S.Ok
l.O k
700
500
2.0 k
..
-
;:: 200
100
70
50
lO
0.02
........
~
;:;:; 1.0 k
:- 30 0
-'
VCC'200V
ICIIO - 5.0
101 ·102
TJ.250C
I,
Id@VOElolf)' 5.0 V
'";::
JOO
500
If
.......
lOO
200
0.5
0.1
0.2
0.5
1.0
2.0
5.0
10
100
0.02
20
IC. COLLECTOR CURRENT (AMP)
0.05
.0.1
0.2
r-..
V
0.5
1.0
2.0
IC. COLLECTOR CURRENT lAMP)
4-248
5.0
10
20
2N6274
(SILICON)
thru
2N6277
HIGH-POWER NPN SILICON TRANSISTORS
designed for use in industrial-military power amplifer and
switching circuit applications.
o High Collector Emitter Sustaining
VCEO(sus) = 100 Vdc (Min) = 120 Vdc (Min) = 140 Vdc (Min) = 150 Vdc (Min) -
50 AMPERE
POWER TRANSISTORS
NPN SILICON
Voltage 2N6274
2N6275
2N6276
2N6277
•
High DC Current Gain hFE = 30~120@ IC= 20Adc
= 10 (Min) @ IC = 50 Adc
•
Low Collector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
•
Fast Switching Times @ IC = 20 Adc
tr = 0.35 J,Ls (Max)
ts = 0.8 J,LS (Max
tf = 0.25 J,LS (Max)
•
Complement to 2N6377-79
100,120,140, 150 VOLTS
250 WATTS
'MAXIMUM RATINGS
Symbol 2N6274 2N6275 2N6276 2N6277
Rating
v
v
Coliector·Base Voltage
Collector-Emitter Voltage
Emitter·Base Voltage
140
160
180
Vdc
100
120
140
150
Vdc
6.0
Vdc
50 - - -......
Adc
V
Ie
Collector Current - Continuous
Unit
120
i
100
Peak
Base Current
IB
Total Device Dissipation @ TC =25°C
Derate above 25°C
Po
Operating and Storage Junction
TJ,Tstg
Adc
20
250 - - - 1.43
- - - - 6 5 to +200---
Temperature Ran e
THERMAL CHARACTERISTICS
Oaaracteristic
Thermal Resistance, Junction to Case
-Indicates JEDEC Registered Data.
FIGURE 1 - POWER DERATING
250
f"'...
I'-..
" "-
'- .......
"- i'..
o
o
25
50
75
100
125
150
TC,CASE TEMPERATURE lOCI
STYLE I:
PIN 1. BASE
2. EMITTER
CASE COLLECTOR
INCHES
MILLIMETERS
DIM MIN MAX
MIN
MAX
A 38.35 39.37 1.510 1.550
B
19.30 21.0d 0.760 0.830
C
7.62 0.250 0.300
S.35
0
1.45
I.BO 0.057 0.063
0.135
E
3.43
F
29.90 30.40 1.177 1.197
G 10.67 11.18 0.420 0.440
H
5.21
5.72 0.205 0.225
J
18.64 17.15 -0.S55 O. 5
K 11.1B 12.19 0.440 0.480
Q
3.84 4.09 0.151 O.ISI
R 24.89 28.67 0.980 1.050
-
.....
175
"-
200
CASE 19].1)1
4-249
2N6274 thru 2N6277
-ELECTRICAL CHARACTERISTICS (TC = 25°C unlesSOlherwise nOled)
I
Characteristic
I
SVmbol
Min
Max
100
120
140
150
-
-
50
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage t 1 )
Collector Cutoff Current
2N6274
(VCE = 60 Vde, IS = 0)
2N6275
(VCE = 70 Vde, IS = 0)
2N6276
(VCE = 75 Vde, IS = 0)
2N6277
Collector Cutoff Current
ICEX
IVCE = Raled VCS, VEBlofli
IVCE = Raled VCB, VESlofli
= 1,5 Vde)
= 1,5 Vde, TC = 150°C)
Emitter Cutoff Current
•
/lAde
ICEO
(VCE = 50 Vde, IS = 0)
IV BE = 6.0 Vde, IC
Vde
VCEOlsus)
2N6274
2N6275
2N6276
2N6277
(lc = 50 mAde, IS = 0)
50
50
50
--
10
/lAde
-
1.0
mAde
100
/lAde
IESO
= 0)
ON CHARACTERISTICS
DC Current Gain
'11
hFE
-
VCE = 4.0 Vde)
50
-
lic = 20 Ade, VCE = 4.0 Vdc)
30
120
= 4.0 VdC)
10
-
lic
= 1.0 Adc,
lic = 50 Adc, VCE
Collector-Emitter Saturation Voltage
(lC = 20 Adc, IS = 2.0 Adc)
lic
VCElsal)
= 50 Adc, IB = 10 Adc)
Base-Emitter Saturation Voltage
IIC = 20 Adc, IS = 2.0 Adc)
VSEls•• )
Vde
1.0
3.0
Vde
'3.5
VSElon)
-
1.8
Vde
fT
30
-
MHz
Cob
-
600
pF
t,
-
0.35
/lS
0.80
/lS
0.25
/lS
IIc = 50 Adc, IB = 10 Adc)
Base-Emitter On Voltage
IIc = 20 Adc, VCE = 4.0 Vdc)
-
1.8
OYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (21
(lc
= 1.0 Ade, VCE
Output Capacitance
IVCB = 10 Vdc, IE
=
10 Vde, f tesl = 10 MHz)
=0, f = 0.1
MHzl
SWITCHING CHARACTERISTICS
Rise Time
IVCC
= 80 Vdc, IC
= 20 Adc, 181
= 2.0 Adc, VBElofli = 5.0 Vdc)
Storage Time
IVCC
ts
= 80 Vdc, IC = 20 Ade, ISl = IB2 = 2.0 Adc)
Fal/Time
IVCC
'f
= 80 Vdc, IC = 20 Adc, ISl = IB2 = 2.0 Adc)
-
Indicates JEOEC Registered Data.
0) Pulse Test: Pulse Width ~ 300 J,lS. Duty Cycle ~2.0%.
(2) fT .:. ~fe
I. f test FIGURE 3 - TURN-ON TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
2.0
VCC
+80 V
3OPS-H
+2:·~~Cl_
.18.5V
=r--c:
R8
10 Ohms
IC/l~ = 110 .=
1.0
0.7
RC
4.0 Ohms
TJ = 25 0 C=
0.5
"":;w
f/ td @VSEloff) = 5.0 V
..;; 0.3
~
0.2
i=
~.
lN3879
0.1
Ir,lf';; 10 ns
DUlY Cycle = 0.5%
F=
1,@VCC=80V
/
--..:::
.....
V
0.07
0.05
-4.0 V
0.03
Note: For information on Figures 3 and 6, R8 and RC were
varied to obtain desired test conditions.
0.02
0.5
4--250
0.7
1.0
5.0 7.0 10
2.0
3.0
IC, COLLECTOR CURRENT (AMP)
20
30
50
2N6274 thru 2N6277
FIGURE 4 - THERMAL RESPONSE
1.0
~
~
0.71--- I- D - 0.5
"'~~
t-N
O. 3
w'"
--:-
0.1
;;;",
~~
~~
0.2
~~ O. 2
a.1
r\11
-
o. 5
p
rnn
OUTY CYCLE, D 11/12
I- ~ E;;:~
0.05
"'~ ~o.o 7~ F- _0.02
pr
:>z
~~o.o 5
~'"
w
0.0 2
....-
~
II
0.0 1
0.02
0.05
II II
II
0.1
I-r-
11~2~
0.01
fliNG LEI PU~SE
u.. ~o.o 3~
OJC(I) =
OJC
8JC = 0.7 0 CIW Max I II
1_
o CURVES APPLY FOR POWE~_
PULSE TRAIN SHOWN
- ff- - REAO TIME AT 11
l - I-- TJ(pk)- TC = P(pk) 0JC(I)- I-
02
0.5
1.0
2.0
5.0
t,
10
20
50
100
200
500
1000
2000
TIME (ms)
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
10 0
0
~
l>:
0
:!
'"
0
~
5.0
lOs
TJ - 200 0 C
5.0 m..........
dc",
Second Breakdown limited
'" 2. 0
=>
'-' 1. 0 ---Bonding Wire limited
limited
'" 5 _ ........ Thermallv
@TC=25 0 C(SinglePulse)
O.
g
_ o.
_.
1.0;;;;
~
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater diSSipation than the curves indicate.
~~
The data of Figure 5 is based on T J(pk)
F==F
for duty cycles to. 10% provided T J(pk) .;; 200°C. T J(pk) may be
~
8 o. 1
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed bV second breakdown.
2N6274.
2N6275
2N6276
2N6277
':>0.0 5
0.0 2
0.0 1
2.0
3.0
= 200°C; T C is variable
depending on conditions. ,Second breakdown pulse limits are valid
2~f:: Curves Apply Below Rated BVCEO
5.0 70 10
20
30
50 70 100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
200
,
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN-OFF TIME
10,00 0
5.0
3.0
700 0
500 0
IBI = IB2
ICIIB = 10
TJ = 25 0 C
-
1
_1"s
2.0
] 0.7
~ 0.5
~ 200 O~
0.3
~ 100 0
r--... .....
I'-
~
1/
'-'
/
'"
70 0
500
~
U 300
V
t-f-.
O. 1
Gib
w
II@VCC=80V
0.2
200
0.0 7
0.05
0.5
1
100
0.7
1.0
2.0
3.0
25 0 C
'-'
Z
;:::
.0
-
300 0
I--
1.0
TJ
5.0
7.0
10
. 20
30
50
0.1
IC, COLLECTOR CURRENT (AMP)
4-251
0.2
0.5
10
20
5.0
1.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
50
100
•
2N6274 thru 2N6277
FIGURE 8 - DC CURRENT GAIN
1000
700
500
z
<
VCE-4.0V= ~ =
---VCE= 10V-
r- -
300
-
:::>
Q
~
0
50
3.6
~
3.2 I'- c12.01A
>
a:
1:-,
":'
a:
j
\: ~
1.0
2.S
2.4
2.0 3.0
5.0 7.0 10
IC. COLLECTOR eURRENT(AMP)
20
1.6
30
Q
50
~ 0.4
>'"
o
0.01
III
'"~
1. 2
.s
A
r-
~Bf\sal) @leliB = 10
o.S
II
.#
III
/
o
0.5
0.7
1.0
/
2.0 3.0
5.0 7.0 10
·Ie. COLLECTOR CURRENT lAMP)
0.05
....-,
6ER'j"e
r-
/
V ./
'OVC fo, VCElsa!)
~VB f~' VBIE
~
-2.0
0.5 .0.7
50
-
1.0
,/ ....
V
.....
~-
2.0 3.0
5.0 7.0 10
IC.COLLECTORCURRENT lAMP)
20
30
50
FIGURE 13 - BASE CUT-OFF REGION
TJ = 150 0C
/
Idooc
0
-
VCE=IOOV_
/
1
/
+0.1
+01
+0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
h
/
/1 ~'
iii
25 0C
~R'Vers.
F0"j'd........
o
'(f
'j
I-
10-2
-0.1
10
J
~ +2.0
/
25 0C
I
::>
,oooe;
./
I
~
30
I
IC = ICES
I
+6.0
VCE = 100V-
/
5.0
2.0
Q
/
20
III
FIGURE 12 - COLLECTOR CUT-OFF REGION
TJ = 1500:'"
0.1
0.2
0.5
1.0
lB. BASE CURRENT lAMP)
'"
~ +4.0
","CElsa!)
. /~ IC/iB= 101-
I I
I'..
0.02
- - - - -550C10 +250C
- - - +250Clo+1500C
c:;
~
r- f--
VBE@VCE=4.0V
0.4
"
\
'Appliesfo, IC/IB < hFE/41
I i'l
I
1'1-
+10
E5 +8.0
/.
Q
>~
">
~
A
I. 6
>
~
1/
Q
w
+'2
I
1/
~ 2.0
~
1\
FIGURE 11 - TEMPERATURE COEFFICIENTS
TJ=250C
2.4
t--.....
1\
O.S
FIGURE 10 - "ON" VOLTAGES
2.S
~J l J5!J
III
m
lOA
~ 1.2
.~
30
10
0.5 0.7
loll
~. 2.0
:E
55 0C
20
•
Q
Q
TJ - +1500C
+250C
w
a:
a: 100
I I
~
'"~
-
~ 200
'"'"
FIGURE 9 - COLLECTOR SATURATION REGION
4.0
10-3
-0.1
+0.4
4-252
orward
o
+0.1
+0.2
+0.3
VSE. SASE·EMITTER VOLTAGE IVOLTS).
+0.4
2N6282 thru 2N6284 NPN (SILICON)
2N6285 thru 2N6287 PNP
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
. designed for general·purpose amplifier and low·frequency switching
applications.
DARLINGTON
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60,80, 100 VOLTS
160 WATTS
•
High DC Current Gain @ IC = 10 AdchFE = 2400 (Typ) - 2N6282, 2N6283, 2N6284
= 4000 (Typ) - 2N6285, 2N6286, 2N6287
•
Collector· Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) - 2N6282, 2N6285
= 80 Vdc (Min) - 2N6283, 2N6286
= 100 Vdc (Min) - 2N6284, 2N6287
•
Monolithic Construction with Built·ln Base·Emitter Shunt
Resistors
•
*MAXIMUM RATINGS
Rating
Symbol
2N6282
2N6285
2N6283
2N6286
2N6284
2N6287
Unit
VeEO
60
80
100
Vdc
Collector-Base Voltage
VeB
60
80
100
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Ie
20
40
Adc
Collector-Emitter Voltage
Collector 'Current - Continuous
Peak
Base Current
IB
0.5
Adc
Total Device Dissipation@Tc=250C
Derate above 25°C
Po
160
0.915
Watts
wloe
TJ,Tstg
-65 to +200
°e
Operatmg and Storage Junction
Temperature Range
lr~
r~K
E
~AnN~
\
PLANE
*THERMAL CHARACTERISTICS
OIaracteristic
Thermal Resistance, Junction to Case
-Indicates JEDEC Registered Data.
FIGURE 1 -POWER DERATING
160
i"-.
140
~
z 100
c
iii
i5
""~
~
~
NOTE:
2. EMITTER
1. DIM "O"IS DIA.
CASE: COLLECTOR
MILLIMETERS
INCHES
DIM MIN MAX
MIN
MAX
"'- I'-..
;;;
~ 120
~
STYLE 1:
PIN 1. BASE
.""
A
B
.......
80
60
40
20
o
o
25
50
75
100
C
"
125
150
D
E
F
G
H
J
...............
K
175
K
Q
200
TC, CASE TEMPERATURE.(OCI
R
-
39.37
21.08
7.62 0.250
1.09 0.039
- 3.43
29.90 30.40 1.177
,10.67 11.18 0.420
5.33
5.59 0.210
16.64 11.15 0.655
11.18 12.19 0.440
3.B4
4.09 0.151
26.67
Collector connected to case.
CASE 11·01
6.35
0.99
-
(TO·31
4-253
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP
*ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC
= 0.1
2N6282, 2N6285
2N6283,2N6286
2N6284,2N6287
Collector Cutoff Current
= 30 Vde,
(VCE = 40 Vde,
(VCE = 50 Vde,
= 0)
IB = 0)
IB = 0)
(VCE
-
1.0
2N6283, 2N6286
-
1.0
2N6284,2N6287
-
1.0
-
0.5
-
5.0
-
2.0
750
18,000
2N6282,2N6285
.
Collector Cutoff Current
= Rated VCB,
(VCE = Rated VCB,
•
= 5.0 Vde,
mAde
ICEX
VBE(off)
VBE(off)
= 1.5 Vde)
= 1.5 Vde, TC = 150o C)
Emitter Cutoff Current
(VBE
mAde
ICEO
IB
(VCE
Vde
VCEO(sus)
= 0)
Ade, IB
lEBO
mAde
= 0)
IC
ON CHARACTERISTICS 11)
DC Current Gain
Collector-Emitter Saturation Voltage
= 10 Ade,
IIc = 20 Ade,
(lC
-
hFE
= 10 Ade, VCE = 3.0 Vde)
(lC = 20 Ade, VCE = 3.0 Vde)
(IC
100
2.0
VSE(on)
-
2.8
Vdc
VSElsat)
-
4.0
Vde
Ihle I
4.0
-
MHz
-
400
300
-
Vde
VCE(sat)
= 40 mAde)
I B = 200 mAde)
IB
Base-Emitter On Voltage
3.0
I
IIc = 10 Ade, VCE = 3.0 Vde)
Base-Emitter Saturation Voltage
(lC
= 20 Ade,
IS
= 200 mAde)
DYNAMIC CHARACTERISTICS
MagOltude of Common Emitter Smail-Signal Short-Circuit
Forward Current Transfer Ratio
= 3.0 Vde, I
(lC = 10 Ade, VCE
=
1.0 MHz)
Output Capacitance
(VCB
= 10 Vde,
IE
MHz)
2N6282, 83, 84
2N6285, 86, 87
Small-Signal Current Gain
(Ie:: = 10
pf
Cob
= 0, I = 0.1
hIe
= 3.0 Vde, I
Ade, VCE
600
-
~ 1.0 kHz)
• Indicates JEDEC Registered Data.
(,) Pulse test: Pulse Width = 300 /Js, Duty Cycle
= 2%
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - SWITCHING TIMES
10
7.0
5.0
Vee
-30 V
RS & RC VARIED TO OBTAIN DESIRED CURRENT lEVELS
0,. MUST BE FAST RECOVERY TYPES, e 9
'e '"
V,
MB05300 USED ABOVE
100 mA
MSD6100 USED BELOW 'e'" 100 rnA
~~P~:--[J~~~-~__ ]~
VI
APPROX
-12 V
3.0
Re
SCOPE
:g
51
~
2.0
~IS
2N 6282/84 (N PN)
2N628S/87 (PNP)
I
Is.
~
1.0
- i.>Tt-
- I-
>~
...
~. 0.7
0.5
--II,s.,
Ir, tf 0;;" IOns
DUTY CYCLE" 1.0%
+40V
0.3 VCC =30 Vdc
0.2 IC/IB =250
IBl = IB2
TJ =2S oC
O. 1
0.2
0.5
0.3
lor td and tr. 0, Isdlsconnected
and V2 =0
For NPN test circuit reverse diode and voltage polarities.
4-254
t-.......
r- .......
ti~ I-t,
....
-
-
~
'-
-r-_
r--....td VBE(om =0 V~ I-@
0.7 1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENTIAMP)
7.0
10
20
2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP
FIGURE 4 - THERMAL RESPONSE
1.0
~
O. 7 =0 =0.5
~_ O. 5
--
wC
",w
:: ~ 0.3
==
-
0.2
:5 ~
0.2
:=:::
o. 1=.0.05
in'"
ZC
"",z
-
f-
0.1
f.-- r-",.
;0..
PmJl
~ ~ 0.01 ~0.D2
§ ~ 0.05
u.
ft
~
~ 0.03
0.02
-
f--
0.G1
ROJCIII = rlt) ROJC
ROJC = 1.09 0 C/w Max
o CURVES APPL Y FOR POWER
PULSE TRAIN SHO\~N I I
READ TIME Altl i
DUTY CYCLE, 0 = 11/12
r
SINGLE PULSE
III
0.01
0,01
=
~-J
...K
0.02 0.03
0.05
0.1
0.2
0.3
0.5
2.0
1.0
I
3.0
II
II
10
5.0
II TJlpkl - TC = Plpkl ROJCItII
II
20 30
50
100
200
300
500
1000
I, TIME Ims)
ACTIVE-REGION SAFE OPERATING AREA
FIGURE 5 - 2N6282, 2N6285
FIGURE 6 - 2N6283, 2N6286
5°S:mm~3:;Elffil
l=t:ttttm~~,x~'t¢Ul:tj
10 F
~~ 0.51.0ms
mS~""'~'~~IIOI'l~mmS
50~~~~~;:~~~~~
f=- 0.1 ms
f:=
50~~~~~!=mffil
I=-r-" 0.1 ms
201-_::tt'trn~~~~~;Ij
f0.5m;f~
20~~it~~~~~~~~
I-- - 0.5 ms
20
5.0
FIGURE 7 - 2N6284, 2N6287
10
~~
:>::'""r;;....
1.0ms
= 5.0 m:c
2·°t=l=t=tml1==+=t=tf¢:l'W
==
5.0=
10
5.0
5.0 ms
dc
2.0~+tml1==+~Al=tm
dc
2'°I=++t+l+I1==t=l=M:mI
1.0~!IB
1.0 _ _
mS~~~~~111
F1.05.0ms
1.0 _ _
0.5
0.58=8
0.5
J ''';':;:''i-',c'--+-HHlrI++H
0.21-+t-l..;'M
0.21-++1-'",J-;·',,"...',-c-+++++'i+H
0.21-++-l-+i'J,,·f20;.:o..:'c'-+++++tlIff
- '-SECONOBIlEAKOOWNtrr.tlTEO
. 2.0
5.0
10
20
50
=
- - SECOND 6RMKOOWN lIMITED
0.1 ::-:=~~:~~~~~::~T~~~~~TC'2!oDC ~
0.05 F==;:::t:t:~INGlE PULSE
0.1
0.05
100
:;:=-:
SINGLE PULSE
2.0
VCE, COLLECTOR·EMITTERVOLTAGE IVOLTS)
~~~~~~~~::~T~~I~~~TC ~ 25DC
5.0
10
20
50
100
100
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; I.e, the transistor must not
be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on T J(Ilk) = 2000 C; T C is variable depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T Jlpk) <200u C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less than the limitations Imposed by second breakdown.
F,GURE 8 - SMALL-SIGNAL CURRENT GAIN
FIGURE 9 - CAPACITANCE
10,000
z
...
~\.
r---.... ....
200
......
. ....
-...... ~
1""'- .....
- - - 2N6282/841NPN)
2N6282/841NPN)
2N6285187 (PNP)
10
TJ = 25°C
-----
50
100
200
500
1000
f, FREQUENCY (kHz)
100
0.1
'-III ~~m5/81Ip~PI
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-255
20
1
50
100
2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP
I
·NPN
2N6282,2N6283,2N6284
pilip
2N6285,2N6286,2N6287
FIGURE 10 - DC CURRENT GAIN
20,000
-
30,00 0
t--V~E: ~.O~
20,000 VCEI: 3.dv
10,000
z
7000 ~TJ= 150°C
5000 t-
'"
3000 . /
;;:
'"a:~
10,000
;;: 7000
,
III.
2000
a:
f-25~
:::>
'-'
'-'
~
700 fZ"'-550C
500
L
•
300
200
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
'"'"
ffi
5000
:::>
2000 /
-55°C
10
-
300 01-- 25°C
[/f'
~
"
1000
Q
TJ=150oC
z
'-'
'-'
c
~
1000
70 0
500
V
'\
300 ':--=,=,.---l-='::--'::-':-l--':-'::-.L-,:-'::--::!~.l....:-l;:--1::-1:-~~-L.--:?
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
FIGURE 11 - COLLECTOR SATURATION REGION
~
3.0
'"
~
w
'"
2.6
~
'"~
'"
~
,I
IC:5.0A
10 A
2.2
:::
Blci:
'"
~
;
2
'"
1.4
'-'
>
1. 0
0.5
\
10 A
:::
-r-
\
0.7
II
2.2
Blti::
'"
1.8
_
1.4
g
W
TJ: 25°C
15 A
IC:5.0A
~
\
1.8
II
2.6
w
15 A
'"
~-'
3.0
~
TJ: 25°C
1\
"-
r-
.....
2
W
'-'
> 1.0
2.0
1.0
3.0
5.0
7.0
10
50
3D
20
0.5
0.7
2.0
1.0
IS. SASE CURRENT (rnA)
3.0
5.0
7.0
10
3D
20
50
la. aASE CURRENT (rnA)
FIGURE 12 - "ON" VOLTAGES
3.0
/
TJ: 25°C
2.5
~
'"~w
'"...
~
'">
::>
3.0
I
2.0
1.5 VSE(sa!)@ Ic/lS = 250
II .J....!-H""
VSE@VCE: 3.0 V
1.0
0.5
0.2
0.3
0.5 0.7
~
/
~ 2.0
-"'"
'"
~
'"
/
>
>'
".
-- II I IIIII
VCE(sat)@ Iclla: 250_
1.0
/
w
--
II
II
J
2. 5
)
/
I(f
TJ:250C
2.0
3.0
5.0 7.0
10
1. 5 V~E(r!) @IC la - 50
1.0
I
20
0.5
0.2
~ f-I--'
VCE(sa!) @Ic/IS: 250
I II
0.3
0.5 0.7
1.0
2.0
3.0
4-256
II II
5.0 7.0
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTO RCU RRENT (AMP)
/
""
VSE@VCE: 3.0 V
r-
/
t::;::;:::::V
/
10
20
2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP
PNP
I
NPN
2N6282. 2N6283. 2N6284
2N6285. 2N6286. 2N6287
FIGURE 13 - TEMPERATURE COEFFICIENTS
+5.0
~.§
~
+2.0
~
+1.0
a:
=>
-1.0
I-
<
~
/
/ /
/
-3.0
i
-4.0
v~
a:
=>
I-
<
~
-S.O
0.2
0.3
'"~
-SSoc to +2S oc
O.S 0.7
I II
1.0
2.0
3.0
I II
S.O
7.0
i
20
10
/
2S oC to Isooe
-SSoc to +2SoC
2w
2S oC to +ISOOC_~
OVS for VSE
il
'/
~
V
'OVC for VCE(sat)
-2.0
i:il-
+4.0
.§
+3.0
~
ffi +2.0
G
+1.0
/
V
2S oC to ISOoC
I II
3;
/
-SSoc to +2SoC
2w
'APPLIES FOR lells <: hFE/2S0
G
III
III
+3.0
ffi
c::;
+S.O
'APPLIES FOR Ic/lS <; hFE/2S0
+4.0
-l-
'OVe for VCE(sat)
-2.0
2S oC to +1S0 aC
-3.0
II
OVs lar VSE
-4.0
-S.O
0.2
-
L
2.0
1.0
,/
IY ......
~ --SSOCto+2S 0 C
I II
IL
O.S 0.7
0.3
.J.-.+-:
I--
/
~
...... 1-"
-1.0
3.0
5.0
7.0
20
10
Ie. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 14 - COLLECTOR CUTOFF REGION
10 3
/
41- VCE = 30 V
/
-
/
VCE - 30 V
/
L
t=TJ
ISOoC
I
3
I--TJ = ISOoC
01-- 100aC
f - - - I- lOOoC
I
100
~RfVER~
r---t- 2S ac
10- I
-0.6
FORW~RO
10-2
,....,
1;:;:r
FORWARD
RSE
2S a C
10-3
-0.4
-0.2
+0.2
+0.4
+0.6
+0.8
+1.0
+1.2
+1.4
+0.6
+0.4
+0.2
VSE. SASE·EMITTERVOLTAGE (VOLTS)
0
-0.2
-0.4
-0.6
FIGURE 15 - DARLINGTON SCHEMATIC
Collector
NPN
2N6282
2N6283
2N6284
Sase
PNP
2N628S
2N6286
2N6287
,------- ---,
:
.-----+-,:
I
I
I
I
I
I
I
I
-0.8
VSE. SASE·EMITTER VOLTAGE (VOLTS)
Base
Collector
,------I'
---,
I
I
I
I
I
I
I
I
I
I
I
I
I
I
1'-""""-"'>NIr-+-'
L _ _ _ _ _ _ _ _ _ --1I
I
IL "'--""""-"'>NIr-~~
_ _ _ _ _ _ _ _ _ --1I
Emitter
Emitter
4-257
-1.0
-1.2
-1.4
•
2N6294, 2N6295 NPN (SILICON)·
2N6296, 2N6297 PN P
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
... designed for general-purpose amplifier, low-frequency switching
and hammer driver applications.
•
4 AMPERES
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60,80 VOLTS
50 WATTS
• High DC Current Gain hFE = 3000 (Typ) @ IC = 2.0 Adc
• Low Coliector·Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 2.0 Adc
• Collector-Emitter Sustaining Voltage
VCEO(sus) = 60 Vdc (Min) - 2N6294, 2N6296
= 80 Vdc (Min) .,.. 2N6295, 2N6297
• Monolithic Construction with Built-I n Base-Emitter
Shunt Resistors
*MAXIMUM RATINGS
Svmbol
2N6294
2N6296
2N6295
2N6297
Collector·Emitter Voltage
VCEO
60
80
Vde
Collector·Base Voltage
VCS
60
80
Vde
Emitter-Base Voltage
VES
5.0
Vde
IC
4.0
8.0
Ade
Base Current
IS
80
mAde
Total Device Dissipation@Tc= 2So C
Derate above 2SoC
Po
50
0.286
Watts
W/oC
-65 to +200
°c
Rating
Collector Current - Continuous
Peak
Operating and Storage Junction,
Temperature Range
T J. T stg.
Unit
I-- U
~;~8-t
~h ,~-~~-~~
If
0
-
K
I
-
STYLE I:
PIN I. BASE
---F-2. EMITTER
-JCASE: COLLECTOR
I
~~ti-'
~T I
Y
I
~
Characteristic
Thermal Resistance, Junction to Case
R
"Indicates JEDEC Registered Data
t
FIGURE 1 - POWER DERATING
0
-I
E
SEATING PLANE
THERMAL CHARACTERISTICS
0
--'
" """-
0
,""'-
1'-.
~
"
0
0
40
80
120
TC. CASE TEMPERATURE (OCI
~
S
~
0
~
160
"-
~
200
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
8 11.94 12.70 0.470 0.500
6.35 8.64 0.250 0.340
C
0
0.71
0.86 0.028 0.034
E
1.27
1.91 0.050 0.075
F 24.33 24.43
0.958 0.962
G 4.83 5.33 0.190 0.210
H 2.41
2.67 0.095 0.105
J
14.48 14.99 0.570 0.590
K
9.14
0.360
P
1.27
0.050
Q
3.61
3.86 0.142 0.152
S
8.B9
0.350
T
3.68
0.145
15.75
U
0.620
All JEDEC Dimensions and and Notes Apply.
-
-
CASESO·02
TO·66
4-258
2N6294, 2N6295 NPN/2N6296, 2N6297 PNP
*E LECTR ICA L CHARACTER ISTI CS (T C = 25°C unless otherwise notedl
I
I
Characteristic
Symbol
Min
Max
60
80
-
-
0,5
0,5
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Vde
VCEO(susl
IIC = 50 mAde, IB = 0)
2N6294, 2N6296
2N6295, 2N6297
Collector Cutoff Current
(VCE = 30 Vde, IB = 0)
(VCE = 40 Vde, IB = 01
mAde
ICEO
2N6294,2N6296
2N6295, 2N6297
-
Collector Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vde)
(VCE = Rated VCB, VBE(off) = 1.5 Vde)
(VCE = Rated VCB, VEB(off) = 1.5 Vde,
TC=1500C)
2N6294, 2N6295
2N6296,2N6297
2N6294,2N6295
-
0.5
0.5
5.0
= 1.5 Vde,
2N6296, 2N6297
-
5.0
-
2.0
750
100
18000
(VCE = Rated VCS, VBE(off)
TC = 150°C)
mAde
ICEX
-
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 01
lEBO
mAde
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Ade, VCE = 3.0 Vde)
(lc = 4.0 Ade, VCE = 3.0 Vdel
-
hFE
Collector-Emitter Saturation Voltage
Vde
VCE(sat)
(lC = 2.0 Ade, IS = 8.0 mAde)
(lC = 4.0 Ade, IS = 40 mAdcl
-
,
Base-Emitter Saturation Voltage
VSE(sat)
,
-
2.0
3.0
-
4.0
-
2.8
Vde
(lC = 4.0 Ade, IS = 40 mAde)
Sase-Emitter On Voltage
II C = 2_0 Ade, V CE = 3.0 Vdcl
Vde
VSE(on)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IIC = 1.5 Ade, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCS = 10 Vde, IE = 0, f = 0.1 MHz)
-
Ihfel
4.0
-
-
120
200
300
-.
pF
Cob
I
2N6294,2N6295
2N6296, 2N6297
Small-Signal Current Gain
(lc = 1.5 Ade, VCE = 3_0 Vdc, f = 1.0 kHz)
hie
-
·'ndicates JEDEC Registored Data
FIGURE 2 - SWITCHING TIMES TEST
CIRCUIT
FIGURE 3 - SWITCHING TIMES
5.0
Vee
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
3. 0
-30 V
2.0
I'
VCC=30 V _
ICIIB = 250
IBI=IB2 TJ- 250 C-
I,
Re
I,
~
1.0
V2
':::~:--[J-~~~---__ 1~
V,
1i
~
~_ O. 3
51
-12 V
I I
25",
If
O. 2
.
approx __
O. 7
O.5
for td and Ir. 01
IS
I
...... , ::---
....."
.1= ___ 2NS294,2NS295INPNI
2NS29S,2NS297 IPNPI
0.0 7=
0.0 5
0.04 O.OS
0.1
0.2
0.4 O.S
1.0
IC, COLLECTOR CURRENT (AMP)
disconnetled
and V2" D
t r• t,.;;; 10ns
DUTY eYClE = 1.0%
For NPN test circuit, reverse all polarities.
4-259
---r- -
~EIOffll=O
2.0
4.0
2N6294, 2N6295 NPN/2N6296, 2N6297 PNP
FIGURE 4 - THERMAL RESPONSE
1.0
0.7 ~D=0.5
-'
~
a:_
~fa
>-N
0.5
0.3 I-- _0.2
-
OJWC
'j1flOJC
CI
:1:)
~~ O.2f--- _0.1
w,",
;;;a:
~~
a:-
O.1---
~~
...,'"
0.05 f---
.....c:: I:i"
I-~ 0.07
:f f3
0.0 3
~
0.0 2
t:;a:
•
I-- =~INGLE
PULSE
tl--J
0.05
0.02
0'.01
REAO TIME AT tl
12
IIIII
0.02
0.05
0.1
0.2
1.0
0.5
10
2.0
5.0
I, TIME (m~
.
TJ(pk) - TC = P(pkl ROJC(t)
DUTY CYCLE, 0 = 11/12
"t:C
0.0 1
0.01
ROJC(t) = ,It)
= 3.50
M.x
0 CURVES APPLY FOR POWER
'
PULSE TRAIN SHOWN
Ll JL
20
50
100
,
,
200
500
1000
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
10
- -
5.0
a;
'"' 2.0
-~.
de "\
~
t:
w
1.0
,
100 jJS
o IJl
:\~~
l'lS
that must be observed for reliable operation; i.e., the transistor
~ 0.5
TJ 20DoC
BONDING WIRE LIMITED
~ 0.2 r-----THE~ALLY LlMITED@TC=25 0C
\
(SIN LE PULSE)
,
O. 11==.
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
80.05
RATED BVCEO
~
2N6294,2N6296 l 0.02
2N6295, 2N6297 t0.0 1
1.0
2.0 3.0
5.0 7.0 10
20
30
50
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
1:l
There are two limitations on the power handling ability of a
transistor:' average junction temperature and second breakdown.
Safe operating area curves indicate I C - V CE limits of the transistor
m
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200; T C is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(pk)';;; 200. TJlpk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
-
1---
~
I II
70
100
FIGURE 6 - SMALL-SIGNAL CURRENT GAIN
FIGURE 7 - CAPACITANCE
4000
2000
i!; 100 0
<[
'">ffi
a:
a:
1:l
j
300
...
TJ = ~50cl
VCE=3.0V
IC= 1.5 A
600
400
,
'"
0
40
4.0 6.0
200
"
z
~
g:
~
...,'
40 60 100 200 400 600 1000 2000
f, FREQUENCY (kHz)
"
70
50
f:'
20
100
i3
1----2N6294,2N6295 (NPN
2N6296,2N6297 (PNPI
10
---- -
...,w
,,
200
100
TJ= 250C
4000
4-260
......
r-.
- --2N6294, 2N6295 (NPN)
Cib
i2N,62iYtmt (PNP)
I
30
0.1
01
0.5
--
20
5.0
10
1.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
Cob
III
50
100
2N6294, 2N6295 NPN/2N6296, 2N6297 PNP
PNP
2N6296. 2N6297
NPN
2N6294. 2N6295
FIGURE 8 - DC CURRENT GAIN
20.000
r-
VCE =13jo;v
~---
10.000
~
c.>
~
~="VCE= 3.0 V
0.1
2.0
0.2
0.4 0.6
1.0
Ie. COLLECTOR CURRENT lAMP)
4.0
FIGURE 9 - COLLECTOR SATURATION REGION
0;
3.0
I I III
~
o
C
~
le= 1.0 A 2.0 A
2.5
w
'"~
\
\
w
.
!::
2.5
TJ = 25 0 C
\ 3.0 A
\
o
~ 2.0
t:
\
":' 1.5
\.
...
cr
o
1\
I-
~
o
1.0
'-'
W
~
i\
2,OA
IC= 1.0 A
:E
~ 1. 5
o
~
C
1\
;; 2.0
I II I
o
3.0 A
~
o
o
~ 3.0
TJ = 25 0 C
'-.
1.0
"-
'-'
~
> 0,5
0.2
0.5
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5,0 7,0
10
20
0,3
0.5 0.7
lB. BASE CURRENT ImA)
2.0 3,0
5.0
1.0
lB. BASE CURRENT ImA)
7.0
10
20
FIGURE 10 - "ON" VOL TAGES
2.0
1.8
I I
-
TJ
,- r--V!'
II
,12~"C- 1-- r-'
2
w
'"~
~
1.6
1.4
VBElsatl@ ICIIB = 250
1.2
o
>
VBE @VCE = 3.0 V
,; 1.0
J1 tTl I
0,8
VICEllsa~) bll~/IB = 250
0.6
0.04 0.06
0.1
I.B
//
-
~
2,0
--
r-
1.6
.~
io'
o
/
C
V
V
0.2
0,4 0.6
1.0
Ie. COLLECTOR CURRENT lAMP)
/
~ /rI2(~C'
II III
r- ,II
-
III
.....
VBEI~t\ JIC~IB = 250
II III
0.8
V6EI~tl) JIC~IB = 250
0,6
"
0,04 0.06
4.0
4-261
III
0,1
V
-'
~ 1.2 VBE@VCE=3,oV
~
o
11111
~ 1.0
/
'/
2,0
r-,--" - )
III
w
V
=====
1.4
LI
,.."
V
/
1---, L
V
V
f---
I
0.2
0.4
0,6
1.0
Ie. COLLECTOR CURRENT lAMP)
2.0
4,0
•
2N6294, 2N6295 NPN/2N6296, 2N6297.PNP.
NPN
2N6294. 2N6295
PNP
2N6296. 2N6297
FIGURE 11 - TEMPERATURE COEFFICIENTS
+5.0
+5.0
I II
~+4.0
>
E+3.0
Iz
'Applies for ICIIB <; hFEI2
~
+1.0
0
J
./
2r1'l150~ V
~ -1.0
!;;:
~
~ -3.0
I-
i- 4.0
II
~ +2.0
<3
~ +1.0
/ '/
/" /
/ J
8
J 110.1
-55 0C to 250C
-5.0
0.04 0.06
0.2
0.4
J
0.6
1501Ctl~
0
w
~ -1.0
~ -2.0
II II
w
~
-3.0
i- 4.0
2.0
4.0
I-H-550e to 25 0C
--
I
25it~
0VB. for VBE
I-
1.0
-r
• OVC. for VCE(sat)
I-
15~W
0VB. for VBE
I
I-
V /
~
-55 0C to 25 0C ,.....
V
·O~C. for VCE(sat)
-2.0
'AppliesforlcllB <;hFEI2
>
E+3.0
~ +2.0
8w
II II
. ~ +4.0
II II . -55 0C to 15 0e
-5.0
0.04 0.06
0.1
IC. COLLECTOR CURRENT (AMP)
V
V
/ /
~
...- ,.,
V
0.2
0.4
0.6
1.0
IC. COLLECTOR CURRENT (AMP)
.-
2.0_
4.0
FIGURE 12 - COLLECTOR CUTOFF REGION
10 5
/
3 f-- VeE - 30 V
/
4t-- VeE 30 V
f--REVERSE_ _FORWARD
I - TJ
15U oC
/
I
25 0C
I
~TJ
150 0C
I
loooe
loooe
/
15 0C
____ rEVERSE~FORWARP
10-2
-0.6
-0.4
-0.2
0
+0.2 +0.4 +0.6 +O.B +1.0
VBE. BASE·EMITTER VOLTAGE (VOLTSI
+1.2
10- I
+0.6
+1.4
+0.4
+0.2
-0.2 -0.4 -0.6 -O.B -1.0
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - OARLINGTON SCHEMATICS
Collettor
NPN
2N6294
2N6295
r------I
I
r-----~
02
-.
«
OJCIII- ,III 0JC
"~
OJC 1.4oC/W Max
o CURVES APPLY FOR POWER_
0
",w
>--'
z-~
wz
0.05
:::«
>->,-,'"
Wv;
tt'"
ISi:i'
"'"'"
0.07
",-
PULSE TRAIN SHOWN
READ TIME ATI)
Pii.: .,.. 0 0.5
TJI,kl- 'Tc
0
"
\.
0.03
~w
0.2
0.1
005
0.02
0.01
a 02 a 03
01
005
02
-
~~-J
SINGLE PULSE
-
PI,kl OJcll1
pFJUl =
am
0.02
0
-
-
0.3
05
2a
1.0
3a
5.0
t,
10
20
30
100
50
=
-
DUTY CYCLE. 0 = 1t/12
I
200 300
500
1000
-
2000
TIME !msl
FIGURE 4 - ACTIVE·REGION SAFE OPERATING AREA
-
a
a
~
5. 0
~
2. 0
~
1.0
~
o. 2
~
o.
a
j
....:::.
-
100!JS~
500",
1.Oms
.....
dc-' ,5.0m,
O. 5
There are two limitations on the power handling ability of a
tranSistor. average J unction temperature and second breakdown.
Safe operating area curves indicate le'VeE limits of the transistor
TJ ~ 200°C
-- -
0.0 ;~~
8
~ 0.0 2
that must be observed for reliable operation; i.e., the transistor
_ BONDING WIRE LIMITED
THERMALLY LIMITED @Tc - 25°C
lSI NG LE PULSEI
SECOND BREAKDOWN LIMITED
0.0 1
Curves Apply Below
0.00 5
0.00 2
5.0
Rated VCEO
7.0
20
10
30
50
70
2N6306
2N6307
2N630B
200
100
must not be subjected to greater diSSipation than the curves indicate.
"-
The data of Figure 4 is based on T J(pk) "" 200°C; T Cis vnriable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) ~200oC. T J(pk) may be
calculated from the data in Figure 3. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
300
500
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
FIGURE 5 - SWITCHING TIMES TEST CIRCUIT
FIGURE 6 - TURN·ON AND TURN·OFF TIMES
5.0
VCC 125V
RC
2.0
41
+B 2 V
1.0
V~l:~5~'
-17 V
TJ = 25 0 C.·+
VCC~ 125 V
IC/IBI = 5.0
3.0
TO SCOPE
]
0.7
W
0.5
">=_.
51
1,
r-
0.3
~
....... 1,
~
0.2
....... r--....
V2
DUTY CYCLE 1%
10 os
01-IN3879
COLLECTDR·BASE JUNCTION
0.07
0.0 5
0.1
FOR DATA IN FIGURE 6.
RB & RC ARE VARIED TO OBTAIN
DESIRED TEST CONDITIONS. 01
OMITTED AND V2 REDUCED TO
5.0 V FOR td and 1, MEASUREMENTS
--'
tf
r::::::::
O. 1
t r. tf";;;
IC/IB2 - 2.0
Id @VBEloffl - 5.0 V
0.2
0.3
0.5 0.7
1.0
2.0
IC. COLLECTOR CURRENT IAMPI
4-265
3.0
5.0
7.0
10
•
2N6306,2N6307,2N6308
FIGURE 8 - COLLECTOR SATURATION REGION
FIGURE 7 - DC CURRENT GAIN
100
~
VCE - 5.0 V
70
50
z
::
30
~
r-
•
,....-
_V
10
>
\' \.
\
Ie = 2.0
3.0
'"
W
\
~\
~
2.0
\
0
~
0.3
0.5 0.7
1.0
2.0
5.0 7.0
3.0
10
1.0
\
\.
"'
>
0.05 0.07 0.1
~
0.2
0
......
0.5 0.7
0.3
1.0
2.0
r-
3.0
5.0
IS, SASE CUR RENT lAMP)
FIGURE 9 - "ON" VOLTAGES
TJ
,
-- -""\
\
IC, COLLECTOR CURRENT lAMP)
2. a
\,. 7.0A
\
~
0.2
\
\ 5.0A
1\
3
7.0
5.0
0.1
3.0 A
\
t-
'"
I-
TJ = 25°C
1\
'\
!=
\ "",
,....- I-
-55°C
\
'::;
c
l..-+-
20
'-'
'-'
c
~
~50C
4.0
'"«
\.
~
Iii
'":::>'"
~
w
\
1\
c
:---TJ '1500;"
1. 6
~c
~
Icils
~
ffi
~ 5.~
'"
;
-= ~ ::::--
VSEI",)
~ 0.8
/
>'
VSE @VCE = 5.0 V
0.4
I II
I
VCElsati
0.2
0.1
0.3
0.5
tHI
0.7 1.0
.....
~
2.0
V
+25 0 C to +150 0
~
+lo U
8
w
'"I-:::>
+0 5r---
~ -0.5
~,/
Ic/IS=5.0
IC/r,°ffHt
3.0
+1. 5
U
AI¢r;.'
IclIs'2.0 ~~ V
1. 2
+2. 0
I-
5.0 7.0
~
0.3
IC, COLLECTOR CURRENT lAMP)
2000
50 a I==TJ - 1500C
r-125~C
r-- r-'
~
10 a
'":::>
'-'
c'"
0
20
~
a
t;
c-'
~
1000
700
/
20 or--
-
~
5«
'--100°C
~u-
i - - ~750C
1.0
-0.4
-0.2
REVERSE
FORWARD
VeE = 200 Vdc+0.2
+2s;e
3.0
5.0 7.0
10
+0.4
TJ = 25°C
III
eib
500
......
200
...... Cob
100
70
50
5.0
2.0 - -25~e
2.0
III'
--
~
z 300
1
1
0.7 1.0
FIGURE 12 - CAPACITANCE
FIGURE 11 - COLLECTOR-CUTOFF REGION
I-
0.5
50e
Ie, COLLECTOR CURRENT IAMPI
100a
1
-rnn
i-1.5 -OIVSfrVSE
0.2
V
11
'ITle~/
-i '0
-1.0
I-
10
~+2~Oe
I
-2.0
0.1
~
..Y ,...../
'(!ve for VCElsat)
--
Y
V
.-:: f- -
-
::-...
30
2a
0.5
+0.6
1.0
2.0
5.0
10
20
50
VR, REVERSE VOLTAGE (VOLTS)
VSE, BASE EMITTER VOLTAGE (VOLTS)
4-266
100
200
500
NPN
2N6315 2N6316
PNP
2N6317 2N6318
COMPLEMENTARY SILICON
MEDIUM-POWER TRANSISTORS
7.0 AMPERE
designed for general-purpose power amplifier and switching
applications.
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS
90 WATTS
o Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 4.0 Adc
o Low Leakage Current - ICEX = 0.25 mAdc (Max)
•
.. Excellent DC Current Gain - hFE = 20 (Min) @ IC = 2.5 Adc
.. High Current Gain - Bandwidth Product fT = 4.0 MHz @ IC = 0.25 Adc
-MAXIMUM RATINGS
Rating
Svmbol
2N6315
2N6317
2N6316
2N6318
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCS
60
80
Vdc
Emitter-Base Voltage
VES
5.0
Vdc
IC
7.0
15
Adc
. IS
Po
2.0
Adc
Collector Current - Continuous
Peak
Base Current
Total Device Dissipation - T C = 250 C
Derate above 25 0 C
Operating and Storage Junction
TJ.Tstg
Unit
Watts
90
0.515
W/oC
-65 to +200
°c
I-U---'I
C
::J4~i
E
D
K
I
SEATING PLANE
---F--J-
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
-Indicates JEOEC registered data. Limits and conditions differ on some parameters and re-
registration reflecting these changes has been requested. All above values meet or exceed
present JEDEC registered data.
STYLE I:
PIN 1. BASE
2. EMITTER
CASE:COLLECTOR
FIGURE 1 - POWER DERATING
140
Ii!
....
B
«
~ 100
z
0
;:
80
Q
~
60
'"'"
40
.P
20
~
;0
MILLIMETERS
MIN MAX
11.94 12.10
C
6.35 B.64
0.11 0.86
D
1.27 1.91
E
24.33 24.43.
f
G 4.83 5.33
H 2.41
2.61
J 14.48 14.99
K 9.14
P
- 1.21
n 3.61 3.B6
S
8.89
3.68
T
U
- 15.75
DIM
120
r-- i'-..
~
.........
o
o
............
..............
~
..... 1"--..
25
50
100
150
15
125
TC. CASE TEMPE RATU RE (DC)
115
200
--
INCHES
MIN MAX
0.410 0.500
0.250 0.340
0.028 0.034
0.050 0.Q15
0.958 0.962
0.190 0.210
0.095 0.105
0.510 0.590
0.360
0.050
0.142 0.152
- 0.350
- 0.145
0.620
All JEDEC Dimensions a.nd and Notes Apply.
CASE 80-02
Safe Area L.imits are Indicated by Figure 13.
TO·66
4-267
NPN 2N6315, 2N6316
PNP 2N6317, 2N6318
*ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristic
Svmbol
Min
Max
60
80
-
Unit
OFF CHARACTERISTICS
Collector-E mitter Sustaining Voltage (1)
(lC =
100 mAde, IS = 0)
Collector Cutoff Current
ICEO
(VCE = 30 Vde, IS = 0)
•
2N6315,2N6317
2N6316,2N6318
(VCE = 40 Vdc, IS = 0)
Vde
VCEO(su,)
2N6315,2N6317
2N6316,2N6318
Collector Cutoff Current
ICEX
-
mAde
-
0.5
-
0.5
mAde
(VCE = 60 Vdc, VSE(ofl) ~ 1.5 Vdc)
(VCE = 80 Vdc, VSE(off) = 1.5 Vdc)
2N6315,2N6317
2N6316,2N6318
-
0.25
(VCE = 60 VdcVSE(off) =1.5 Vdc,TC =150oC)
(VCE = 80 Vdc,VSE(ofl) =1.5 Vdc,TC =150o C)
2N6315,2N6317
2N6316,2N6318
-
2.0
-
2.0
-
0.25
Collector Cutoff Current
mAde
ICSO
(VCS = 60 Vdc, IE = 0)
(Ves = SO Vdc,
0.25
2N6315,2N6317
2N6316,2N631S
IE = 0)
Emitter Cutoff Current
(VES = 5.0 Vdc, IC = 0)
IESO
-
0.25
-
1.0
35
-
mAdc-
ON CHARACTERISTICS
DC Current Gain (1)
(lC = 0.5 Adc, VCE = 4.0 Vdc)
-
hFE
(lc = 2.5 Adc, VCE = 4.0 Vdc)
20
100
(lc = 7.0 Adc, VCE = 4.0 Vdc)
4.0
1.0
2.0
VSE(sat)
-
2.5
Vde
V6E(on)
-
1.5
Vde
fT
4.0
-
MHz
-
300
200
hfe
20
-
-
tr
-
0.7
1"
ts
1.0
I'S
tf
-
0.8
1"
Collector-Emitter Saturation Voltage (1)
Vdc
VCE(,at)
(lC = 4.0 Adc, IS = 0.4 Adc)
(lC = 7.0 Adc,IS = 1.75 Adc)
Base-Emitter Saturation Voltage (1)
(lC = 7.0 Adc, IS = 1.75 Adc)
8ase·Emitter On Voltage (1)
(lC = 2.5 Adc, VCE = 4.0 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 0.25 Adc, VCE = 10 Vde, fte,t = 1.0 MHz)
Outplh Capacitance
(Vce = 10 Vde, IE
= 0, I
pF
Cob
= 1.0 MHz)
2N6317,2N6318
2N6315,2N6316
Small-Signal Current Gain
(lC = 0.5 Ade, VCE = 4.0 Vdc, I = 1.0 kHz)
SWITCHING CHARACTERISTICS
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 2.5 Ade,
lSI = 162 = 0.25 Adcl
-Indicatas JEDEC Registered Data.
(1) Pulse Test: Pulse Width ~ 300 1'1. Duty Cycle ~ 2 0%.
(2) IT -Ihfe I Ute..
4-268
NPN 2N6315, 2N6316
PNP 2N6317, 2N6318
TVPICAL CHARACTERISTICS
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - TURN "ON" TIME
VCC
-30 V
2.0
TJ·250C
VCC ·30V
ICIIB .1'!.::::r:
1.0
12
+9.0JJ
0- - - - -11 V--
0.5
SCOPE
]
01
51
...... I-o..::,lr
0.3
'"
~ 0.2
~~
39
Izs;;l
O. I
tr.tf~10ns
-=
DUTY CYCLE ~ 1.0%
- -
RC
RB
~
r-....
Id @ VBElolI) ~ 5.0 V
0:-
~.OV
0.05
2N6317. 2N6318 IPNP)
0.03
AN63t5r 2Nr3161~PN)1
0.02
0.2 0.3
0.5 0.7
0.07 0.1
FOR CURVES OF FIGURES 3 AND 5. RB AND RC ARE VARIED
TO OBTAIN DESIRED CURRENT LEVELS.
01 MUST BE FAST RECOVERY TYPE ••.g.
MBD5300 USED ABOVE IB ~ 100 rnA
MS06100 USED BELOW IB ~100 rnA
FOR NPN TEST CIRCUIT. REVERSE ALL POLARITIES.
1.0
2.0
3.0
5.0 7.0
IC. COLLECTOR CURRENT IAMPERES)
FIGURE 4 - THERMAL RESPONSE
1.0
I-- D ·0.5
0.5
-'-
i ~ 0.3 I-- I- 0.2
-
~ ~ 0.2 F= r- 0.1
....
,..
....z o
'"
~ ~
o. 1~ F-
~~
0.5 ~
~~
0.05
0.01
'JlJL
' t---J
-
-
OJCltl • rill OJC
i
......
,I
°JC·I.94oCN/Max
0 CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAOTIMEATll
Plpkl
F"F-o ISINGLEPU LSE)
DUTY CYCLE. O· !J112
~~O.O 3
TJlpk)
TC· Plpk) OJCItI
0.02
0.0 1
0.01
0.02 0.03
0.2
0.05 0.07 0.1
0.3
0.5 0.7 1.0
2.0
3.0
Lilllll JJ1J .1
5.0 7.0 10
20
30
60 70 100
1LU 11 U
200 300
500 7001000
I.TIMElrns)
FIGURE 5 - TURN "OFF" TIME
FIGURE 6 - CAPACITANCE
5.0
50 0
TJ·250C
Vcc·30V
IcllO ·10
IBI" 182
3.0
I
2.0
i- 1"-'-= ~
1.0
]
~ 0,5
:. 0.3
If
O.2
-
I-
-
2N6317.2N6318 IPNPl
2N6315.2N6316 INPN)
o. 1
0.05
0.07
I""" ::::..
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
("'--...
'<:::
0
-
"- "'-
T~ .12~O~
~ r!;:::t300
~
"-
~
Cib
'"r--..
I .....
0
oE::~~:~:~: ~=:~:: :~~~))
5.0 7.0
IC. COLLECTOR CURRENT IAMPERES)
50
'0.1
~[
1111111
0.2
0.5
1.0
l"
2.0
50
10
VR. REVERSE VOLTAGE IVOLTS)
4-269
20
50
100
•
NPN 2N6315, 2N6316
PNP 2N6317, 2N6318
I
NPN
2N6315
aftc! 2N6316
PNP
2N6317 and 2N6318
FIGURE 7 - DC CURRENT GAIN
500
500
VCp4.0 V
300
TJ-1S00
z
~
•
z
;;: 100
~
-
0
0
-SSoC
~ 20
....z
2S oC
I-.
0
5.0
0.07 0.1
0.2
0.3
0.5 0.7
~
-..
3.0
2SoC
=-5SOC,
50
.........
30
~
""'t-2.0
1.0
~
'"'"
'"
'"
.'..
VCe= 4.0 V
TJ=l50oC
200
.
r-..
100
~
'"'"
1:l
'"'"
300
C--
200
~
........
20
r......'......
10
5.0
0.07 0.1
5.0 7.0
0.2
IC. COLLECTOR CURRENT (AMPERES)
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
IC. COLLECTOR CURRENT (AMPERES)
FIGURE 8 - COLLECTOR SATURATION REGION
;;; 2.0
~
II
.~
"
'"~
wI.6
'"~
IC=1.0A
'"~w
~
5.0 A
2.SA
1.2
iii 2.0
~
TJ=2SoC
'"~
~ O.8
~-' o.
~
.......
TJ=2 SoC
S.OA
1.2
0.8
~
_ 0.4
4
8
ul
w
~
1.6
I
2.SA
~
~
:;;
8
II
IC= 1.0 A
>'"
0
10
20
50
30
70
200
100
300
500 700 1000
0
10
20
30
50
70
100
200
300
500 700 1000
lB. aASE CURRENT (mA)
la. aASE CURRENT (mA)
FIGURE 9 - "ON" VOLTAGES
2.0
~
..
'"~w
2.0
TJ=2SoC
1.6
1.B
1.2
;;;
!:;'
~U
~ 0.8
~
_
'"
>
>'
VaE( ...) IIIC~B =10
VaE II VCE =
4.~ V
0.4
t l ( J IIllcnl =110
0
0.07 0.1
0.2
0.3
~
....
-
0.5 0.7 1.0
~
TJ -2S oC
~
~
~~
VaE(a.) 'Ic~a - 10
0,B
V~E~V~E"rOIV
0,4
f-2.0
3.0
5.0 7.0
IC. COLLECTOR CU'RRENT (AMPERES)
p-
I
J
.I
,,;
V
~
0
0.07 0.1
I
V~E+ fIclla ~ 1~
0.2
0.3
0,5 0.7
-
1.0
/
~
2.0
IC, COLLECTOR CURRENT (AMPERES)
4-270
1/
~
w
~
V
3.0
5.0 7.0
NPN 2N6315, 2N6316
PNP 2N6317, 2N6318
NPN
PNP
2N6315 and 2N6316
2N6317 and 2N6318
FIGURE 10 - TEMPERATURE COEFFICIENTS
+2.5
+2. 5
~ +2.0
~ +2.0
>
·Appliesfor tc/lB" hFE/4
~ +1.5
....
ffi
+1.0
*
U
+0.
/
~ -1.0
>-2. 0
-2. 5
0.07 0.1
ct:>
0.3
0.5 0.7
1.0
0
+r5~Cio~
~ -1.5
-evs fo,VSE
....
II Ii
:> -2. 0
I I
et:>
2.0
3.0
5.0 7.0
J
/'
-SSoC to +25 C V
~ -1.0
...... 1-
-55°C to +25 0 C
0.2
IY
--r I--"
w
b
11'11
< .1. 1.1 1
- ' eVC for VCE(sa')
§ -0.5
,,;
1111L......r
I
....
II
I
12~'C to ~IS~'C V
8
+25 0 C!j +150o
eVS fo, VOF.
~ -1. 5
+1.0
~ +0.5
t-
-55°C to +25 0 C
-no 5
~
....
~
U
II ....J.--1'
oy
w
....
V
+25 DC to TI50De
I
Il
+s
~+1.5
/
'.' ,
.'. '.
-2. 5
0.07
n
~'O+250C
I II I
II II
0.1
0.2
0.3
I
0.5 0.7 1.0
2.0
3.0
5.0 7.0
IC. COLLECTOR CURRENT (AMPERES)
IC. COLLECTOR CURRENT (AMPERES)
FIGURE 11 - COLLECTOR CUT·OFF REGION
103
VCE-30V
1.... 10
~
10
13
'"
o 10
TJ -IS0'C
2
1
ffi
1
'"
'"~
1000C
0
25'C.
8:::: 10-1
o
8
:2 10-2~REVERSE
-0.2
100
B
~1O-2
FORWARD
10-3
+p.l
-0.1
100'C
10 1
t;
~ 10- 1
IC - ICES
-0.3
102
+02
+0.3
+0.4
+0.5
IC -ICES
~REVERSE
10-3
+0.3
+0.6 +0.7
+02
FORWARD
-0.1
+0.1
-0.2
-0.3
-0.4
-0.5
-0.6 -0.7
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VSE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 12 - EFFECTS OF EXTERNAL BASE·EMITTER RESISTANCE
10M
IUM
;;;
'"'"o
.... .....
~I.OM
z
~
/
TO k
......
I'.
IC ~ ICES
IC=2xICES-
"'<
'"
0.1
4B
60
BO
'"
~
~
ICES
.....
140
160
180
2 x ICES
.....
,...>(
10 x ICES
10 k
""
~ t.O k
~
.........
120
~
......
.;>..
~
........
........
........
100
I-IC~
1:1
l--(TYPICAL ICES VALUES
kr-OBTAINEO FROM FIGURE 11)
20
z
;'!
......
......
1.0 k
:lJ
-
VCP30V==
.....
!!l 100 k
~
'"'a:0
t;
w
-'
-'
0
'"'!:2
...
...
~
z
. . t . .O.1 ms
...
...
I
0.3
0.2
5.0
7.0
2N6315.17
2N6316.18
1.0\';'.-
\.
\..
5.0ms
-.l,.
."\
20
' 10
30
50
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of ~
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limitsot the tran·
sistor that must be observed for reliable operation; i.e., the
=
'-
....
TJ = 200·
."'"
2.0
.
de '\
I-.---SECONO BREAKDOWN LIMITEO
- '-BONDING WIRE LIMITED
1.0 1=- ---THER(~fN~i-r~1tmN(iHC = 25 D C
0.7
Curves Apply Below Rated VCEO
0.5
0.5 ms:
70
100
The data of Figure 13 is based on TJ(pk)
=
200°C; TC is
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) <200°C.
T J(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
transistor must not be subjected to greater dissipation than the
curves indicate.
4-272
2N 6338 (SILICON)
thru
2N6341
HIGH-POWER NPN SILICON TRANSISTORS
25 AMPERE
POWER TRANSISTORS
NPN SILICON
designed for use in industrial-military power amplifier and
switching circuit applications.
•
•
High Collector-Emitter Sustaining
VCEO(sus) = 100 Vdc (Min) = 120 Vdc (Min) = 140 Vdc (Min) = 150 Vdc (Min) -
Voltage 2N6338
2N6339
2N6340
2N6341
100, 120. 140, 150 VOLTS
200 WATTS
High DC Current Gain hFE=30-120@IC=lOAdc
= 12 (Min) @ IC = 25 Adc
o Low Collector· Emitter Saturation VoltageVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
•
Fast Switching Times@ IC = 10 Adc
tr = 0.3)Ls (Max).
ts= 1.0)Ls (Max)
tf = 0.25)Ls (Max)
o Complement to 2N6436-38
'MAXIMUM RATINGS
Symbol
Rating
Collector-Base Voltage
Collector-EmItter Voltage
2N6338 2N6339 2N6340 2N6341
Unit
VCB
120
140
160
180
Vdc
VCEO
100
120
140
150
Vdc
VEB
6.0
Vdc
IC
25
50
Adc
Base Current
IB
10
Adc
Total Device DlssIPatlon@Tc=250C
Po
200
1.14
wloe
Emmer-Base Voltage
Continuous
Peak
Collector Current
Derate above 25°C
Operating and Storage Junction
Watts
- - - - 6 5 to +200---
TJ.T stg
°e
.L~"~'
~SEATiNG
K
I
0
PLANE
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
"Indicates JEDEC Registered Data.
FIGURE 1 - POWER DERATING
200
_175
i
150
-
"'-
~ 12 5
!;i
'"
DIM
~
B
.......
""
50
25
o
o
C
D
E
F
G
H
J
K
i'..
25
50
15
100
125
150
"'"
~200
175
TC. CAS!; TEMPERATURE (DC)
4-273
MILLIMETERS
MAX
MIN
INCHES
MAX
MIN
39.31
21.08
1.62 0.250
1.09 0.039
3.43
29.90
30.40 1.171
10.67
11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
Q
3.84
4.09 0.151
26.67
R
Collector connected to case.
A
~
~ 100
C
~ 75
~
NOTE:
1. DIM "0" IS OIA.
-
6.35
0.99
-
CASE 11·01
(TO·3)
1.550
0.830
0.300
0.043
0.135
1.191
0.440
0.220
0.675
0.480
0.161
1.050
2N6338 thru 2N6341
*ELECTRICAl CHARACTERISTICS ITe'" 25°C
unlcu otherWise noted)
Min
Symbol
Max
Unit
OFF CHARACTERISTICS
Vd,
Coliector·Eminer Sustammg Voltage
2N6338
2N6339
2N6340 .
2N6341
(Ie" 50 mAde. Ie " OJ
Collector Cutoff Current
(VeE" 50 Vdc, Ie "" OJ
2N6338
IV CE -' 60 Vdc, I B "" OJ
2N6339
NeE" 10 Vdc, IS -' OJ
2N6340
75 Vdc, Ie ~ 0)
2N6341
!VeE
=
100
120
140
150
p.Adc
50
,0
50
50
Collpclor Cutoff Cum·nt
ICEX
(VeE" Rated VCEO. VEBloff) = 1.5 Vdcl
(VeE.:t Rat«! VCEO. VEBloffi '" 1.5 Vdc, TC '" 1S0oCl
•
Collector Cutoff Current
(VCS'= Rated Vee. Ie
,-
leBO
10
10
mAde
10
/JAde
100
j.lAdc
/.lAde
'" 01
Em'lter Cutoff Current
(Vse ,.. 60 Vdc, Ie '" 01
leaD
ON CHAHACTERISTICS (11
DC Current Gam
50
30
12
lie = 0.5 Adc, VeE" 2.0 Vdcl
lie" 10 Adc, VeE'" 2.0 Vdcl
(Ie'" 25 Adc, VeE ~ 2.(. !.Ide)
120
Vd,
Collec.tor·Em,tter Saturatton Voltdge
tic'" 10Adc,IB~ 1.0 Adc)
lie"" 25 Auc, 18 = 2.5 Adc)
1.•
Sase-Emitter Saturation Vohaq>.l
He = 10 Adc. IS" 1.0 Adcl
18
(Ie'" 25 Adc. IS" 2.5 Adc)
2.5
10
Vd,
Base·Emltter On Voltau~
(le-10Adc, VCE =2.0Vdc)
Vd,
18
VSElonl
DYNAMIC CHARACTERISTICS
Current-Gain 8,mdwldth Product 121
IIC - 1.0 Ade, VeE to Vde,llesl - 10 MHz)
40
;<
Outpul CapdCItiHiCC
(VCS -- 10 Vdc. IE" O. f
~
0 1 MHz)
SWITCHING CHARACTERISTICS
0.3
(VCC ~ 80 Vdc, IC = 10 Adc, ISl = 1.0 Adc, VSE(off) = 6 0 Vdc)
Storage Time
FaliTlmc
(Vec ~ 80 Vd<:, Ie = 10 Adc, 101
hulu:atesJEOEC Reglstorod Data
(11 Pulse Test
1.0
"
(Vec ~ 80 Vdc, Ie = 10 Adc, IS1 '" 182 = 1.0 Adc)
025
so
"'
182'" 1.0 Adc)
Pulse Width'; 300 jJ.s, Dutv Cvc.le "20%.
(2) IT ~ hfel.fte'iT
FIGURE 3 - TURN,ON TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
1000
700
500
Vee
T80 V
,300
RC
B.O Ohms
_-3--_
10~s ---j-J
':1_~D-_
SCOPE
~
-'
tr. tf <; 10 ns
1==
;;:::td @VSE off) = 6.0 V
t-200 b0......
~ 100
;::
-e.ov=r--[
r--.
Vce'BOV
~
lells: 10n:;;:
Tr250 e
..........
tr
/
........
l/-
r--...
70
50
30
Duty Cycle: 1.0%
20
-5.0 V
10
0.3
Note: For information On Figures 3l:lnd 6, RBand RC were
varied to obtain desired test c:onditions.
0.5 0.7
1.0
2.0
3.0
5.0 7.0
Ie. COLLECTOR CURRENT (AMP)
4-274
10
20
30
2N6338 thru 2N6341
FIGURE 4 - THERMAL RESPONSE
1.0
o. 7=0
o. 5
;t
~_
wC
"w
O. 3== 0.2
I- N
1-::;
~~ O. 2
0;'"
ZC
""Z
:=::
---
0.5
-
-
0.1
I-- -~
o. 1=.0.05
..--
pmn
;::::;-
~ ~ 0,0 7FO.02
~ ~ 0.05 I--
::t ~ 0.03 I.---' .....K
0.02
=
~J
V
~'"
~UTY
0.01
CYCLE. 0
r-- SINGLE PULSE
I II
0.01
0.01
-II
II II
0.02 0.03
0.05
0.1
0.2
0.3
0.5
2.0
1.0
3.0
50
10
=
OJC!t) =rlt! OJC'
; - OJC =0.075 0 CIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpkl - TC =Plpkl OJCII)
11/12
20
30
50
100
200
300
500
1000
I. TIME Imsl
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
10 0
50
~
5
l-
~
'"=>
'"C'"'
~.
200.us
0
0
S. 0
I-There are two limitations on the power handling ability
1.Oms
de
5.0 ms
2. 0
1.0
O. 5
O.
~.
~ 0.0 5
0.02
0.0 1
2.0
3.0
5.0
7.0
10
20
50
30
a
The data of Figure 5 is based on T Jlpk) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T Jlpk) .;;. 200°C. T Jlpk) may be
calculated from the data In Figure 4. At high case temperatures,
thermal limitations Will reduce the power that can be handled to
values less than the limitations Imposed by second breakdown.
TJ 200 0 C
BONOING WIRE LIMITED
- - THERMALLYLIMITEO@TC-25 0 C
ISINGLE PULSE)
SECONO BREAKOOWNV~LlMITEO:2N6330
CURVES APPLY BELOW
2N6339
RATEO VCEO
~~~~:~
2~'
8 o. 1
of
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le,VeE limits of the transistor
that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater diSSipation than the curves Indicate.
70
100
200
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
FIGURE 6 - TURN-OFF TIME
FIGURE 7 - CAPACITANCE
5. D
500 0
3. D
Vec = 00 V_
IBI = IB2
IC/IO = 10
TJ =25 0 C
Is
2. 0
r-....
1.0
w
:100
Z
5""
0.5
;:, 0.3
0.2
r--
0.5 0.7
1.0
2.0
3.0
5.0
10
70 0
50 0
;;:
5
30 0
./
U
20 0
---
O. 1
0.0 7
0.0 5
0.3
r-...
!
0
"-
o:;;;;;.!!.
Cib
200 0
3 o. 1
:E
TJ = 25 0 C
300 0
r---
Cob
"'j--.
100
20
30
IC. COLLECTOR CURRENT lAMP)
70
50
0.1
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE IVOLTS)
4-275
50
100
•
2N6338 thru 2N6341
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE 8 - DC CURRENT GAIN
200
g 2.0
TJ = +150 oC
z 10 0
?
to
...
z
70 '-- _-55 0 C
W
0::
0::
0
'"o
30
a
~
I I IIIII
•
1.4
~ 1.2
~,
1=
al
1.0
..-::: ;.....
VSEI"t)@ IcllB = 10
0.8
> o. 6
u:
tt
8
/
O. 2 -
r-
o
0.3
-
VCEI~t\ ~ IC/IJ = IJ
0.5 0.7
2.0
1.0
3.0
-
-f2.0
+25 0 C to +150oC
...
:::>
FORWARD
. +0.1
20
'" 10-2
...J
-0.1
10
~
o
'"~10-2 r--REVERSE
7.0
I"
I"
+250 C
/
o
5.0
+100 0C
...ffi w- I
.3.
w
§
3.0
FIGURE 13 - BASE CUT·OFF REGION
y
,/
--r--55J..-.l-C to +25 0C
2.0
IC. COLLECTOR CURRENT lAMP)
FIGURE 12 - COLLECTOR CUT·OFF REGION
TJ = +150oC
L
IA
0
1.0
IC. COLLECTOR CURRENT lAMP)
I--
1
/
/
J. I k"
I
i
30
V .-
-55 0 C to +25 0C
~
20
iA'
..-r
'OVC FOR VCEI"t)
I"
10
/ I
1/
/ I J
/
//
+3.0
11:
7.0
5.0
--r-y
... -1.0
5.0
2.0
r'APPLIES FOR ICIIS>hFE/2
~ +1.0 -
/
m@Vcrr
0.4
1.0
U
I
w
'"
0.5
_ +5.0
V
A
~ 1.2
0.2
FIGURE 11 - TEMPERATURE COEFFICIENTS
IIII
1.8
0.1
lB. BASE CURRENT lAMP)
FIGURE 10 - "ON" VOLTAGES
2.0
\.
,
\
8 2
W o.
>'" 0
\
1.0
III
1.8
o
1-1"- ~ L,
+25 0 C
+0.3
+0.4
+= F=- REVERSE
10-4
-0.16
+0.5
-O.OB
FORWARD
+O.OB
VBE. BASE·EMITTER VOLTAGE IVOL TS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
4-276
+0.16
+0.24
2N6371 (SILICON)
thru
2N6379
HIGH·POWER PNP SI LICON TRANSISTORS
. designed for use in industrial·military power amplifier and
switching circuit applications.
•
50 AMPERE
POWER TRANSISTORS
PNP SILICON
High Collector Emitter Sustaining Voltage VCEO (sus) = 80 Vdc (Min) - 2N6377
= 100 Vdc (Min) - 2N6378
= 120 Vdc (Min) - 2N6379
80,100,120 VOLTS
250 WATTS
• High DC Current Gain hFE = 30'120@IC= 20Adc
= 10 (Min) @ IC = 50 Adc
o Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC = 20 Adc
tr = 0.35 IlS (Max)
ts = 0.8 IlS (Max)
tf = 0.25 IlS (Max)
•
• Complement to 2N6274-77
• MAXIMUM RATINGS
Rating
Symbol
2N6377
2N6378
2N6379
Unit
Ves
100
120
140
Vdc
VeEO
80
100
120
COllector-Base Voltage
Collector-Emitter Voltage
Emi tter-Base Voltage
Collector Current
.
Continuous
Ie
IS
Total Device Dissipation @
Te= 250 e
Po
50
100
..
Peak
Base Current
20
.....
Derate above 25°C
Operating and Storage JunctiQn T J.T st9
.
Vdc
...
.
Adc
..
Adc
6.0
...
VES
...
..
250
1.43
-65 to +200
Temperature Range
THERMAL CHARACTERISTICS
Vdc
Watts
wIDe
De
~~"~'
'E
Characteristic .
K
SEATING
PLANE
Thermal Resistance, Junction to Case
t
0
STYLE 1:
PIN 1. BASE
F-2. EMITTER
JCASE. COLLECTOR
·'ndicates JEOeC Registered Data.
FIGURE 1 - POWER DERATING
250
~
~
200
't-..
"'" ~
!z
!;! 150
~
iii
C5
'"~
~
100
~
~ 50
o
o
25
50
75
100
DIM
" -"'-,.
125
A
~
150
B
C
D
E
F
.....
175
G
~
200
H
J
K
Q
R
TC. CASE TEMPERATURE (DCI
MILLIMETERS
MIN
MAX
38.35
19.30
6.35
1.45
29.90
10.67
5.21
16.64
11.18
3.84
24.89
39.37
21.08
7.62
1.60
3.43
30.40
11.18
5.72
17.15
12.19
4.09
26.67
INCHES
MIN
MAX
1.510
0.760
0.250
0.057
1.177
0.420
0.205
0.655
0.440
0.151
0.980
CASE 197·01
4-277
1.550
0.830
0.300
0.063
0.135
1.197
0.440
0.225
Ml.5
0.480
0.161
1.050
2N6377 thru 2N6379
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted)
I
Characteristic
Svmbol
Min
Max
80
100
120
-
-
50
50
50
Unit
'OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage 11)
IIc = 50 mAde, IB = 0)
Vdc
VCEOlsus)
2N6380
2N6381
2N6382
Collector Cutoff Current
IVCE = 50 Vde, IB = 0)
IVCE = 60 Vde, IB = 0)
IVCE = 70 Vde, IB = 0)
/lAde
ICEO
2N6380
2N6381
2N6382
-
Collector Cutoff Current
ICEX
-
IVCE = 90% Rated VCB, VBEloll) = 1.5 Vde)
IVCE = 90% Rated VCB, VBEloff) = 1:5 Vde, TC = 150°C)
-
Emitter Cutoff Current
lEBO
10
1.0
/lAdc
mAde
.100
/lAde
IVEB = 6.0 Vde, IC = 01
'ON CHARACTERISTICS 11)
•
DC Current Gain
IIC = 1.0 Adc, VCE = 4.0 Vdc)
IIC = 20 Adc, VCE = 4.0 Vdc)
IIC = 50 Adc, VCE = 4.0 Vdc)
-
hFE
-
50
30
10
Collector-Emitter Saturation Voltege
IIC = 20 Adc, IB = 2.0 Adc)
IIC = 50 Adc, IB = 10 Adc)
VCElsat)
Base-Emitter Saturation Voltage
VBElsat!
120
-
-
1.2
-
3.0
-
1.8
3.5
30
-
-
7000
Vdc
Vdc
IIC = 20 Adc, IB = 2.0 Adcl
IIC = 50 Adc, IB = 10 Adc)
DYNAMIC CHARACTERISTICS
*Current-Gain - Bandwidth Product 12)
IT
MHz
IIc = 1.0 Adc, VCE = 10 Vdc, I tesl = 10 MHz)
I nput Capacitance
pF
Cib
(VEB = 2_0 Vdc,IC = 0, 1= 0.1 MHz)
*Output Capacitance
Cob
1500
pF
0.35
/lS
0.80
p.s
0.25
/lS
IVCB = 10 Vdc, IE = 0, 1= 0.1 MHz)
*SWITCHING CHARACTERISTICS IFlgure 2)
Rise Time
-
'r
Storage Time
(Vce = 80 Vdc, IC
= 20 Ade,
ts·
IIBI = IB2 = 2.0 Adc)
Fall Time
-
'I
'Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width '" 300~s. Duty Cycle'" 2.0%.
= Ihfel o ftest
12) fT
FIGURE 3·- TURN ON TIME
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
2.0
+19~J
II
1.0
0.7
0.5
__ .c:
Scope
]
w
::E
;::
--
-21V-U
30,..-\---j
tr. tt,;;;;O ns
DUly Cycle = 0.5%
+4.0 V
,
~
.......-....
td @VSE loff) ~ 5.0 V
1.0
2.0
",-
1/
i'-
3.0
5.0 7.0
10
Ie, COLLECTOR CURRENT (AMP)
4-278
F=F
I........
0.3
0.03
0.02
0.5 0.7
Nole' For informatIOn on Figures 3 & 6, RB and RC
were vaned to obtain desired test conditions.
I
IC/IS - 10
TJ = 25 0 C
'r@VCC=80V
0.2
0.1
0.07
0.05
J
I
50
2N6377 thru 2N6379
FIGURE 4 - THERMAL RESPONSE
I .0
O.7r----
-'
'"
L
.5
C-
-
0=0.5
~ffi O. 3
t-N
0.2
;;;",
w'"
0.1
.~~ 0.1
.05
~~ O. 2
llT 1_
~UCL~~WA~~PS~YO~ONR POWER_
;;:;::1""
~
.......
OJCII) = r~i OJC
OJC=0.7oCIWMa.
:......: Iiiiii
"'~ ~O.O 7 P ~ 1-0.02
~~O.O5t.-u..
...
3 ......
ff3D.D
",
0.0 2
w
"'"
V
-
,..-- I- TJ(pk) - TC = P(pk) BJCh) -
r-
-
PtJ1Jl
....
......
0.01
I ~IINGLEI
II~
0.05
I
12--,
PU~SE
III
II
0.0 I
0.02
,..-- f- REAO TIME ATII
DUTY CYCLE, 0 = !J/12
:.- ~ 8:1'"
0.1
0.2
1.0
0.5
2.0
5.0
I,TIME(ms)
10
111111
20
50
100
200
1000
500
2000
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
100
50
,.
There are two limitations on the power handling ability of a
transistor. average junction temperature and second breakdown.
Safe operating area curves indicate le'VeE limits of the transistor
that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 IS based on T J(pk) = 200°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) .;;; 200°C. T J(pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be h,;mdled to
values less than the limitatIOns imposed by second breakdown.
<.>
<.>
0
~
~
0.8
ul
<.>
>
20
30
~II
<.>
o
0.02
0.05
IC. COLLECTOR CURRENT (AMP)
+3.0
II
G
2.4
TJ = 25 0 C
if>
~
~
1.6
~
.s
J
~
/.
1.2
0
V8IE( ..t)@IC/18 = 10
>
>' 0.8
VBE @VCE = 4.0
1.0
2.0
3.0
5.0 7.0
10
5.0
C3
$
1/
- - - -55 0 Cto +25 0 C
- - +2~OC ~o +115~OC
)
+1.0
. Ov! for IvctJt)
<.>
w
./
L.::::::
«
~
~ -1.0
i
20
30
50
-2.0
0.5
.
1/
V
~.
~
OVB for VBE
f-
Vi.- ii
I)
:::>
f-
1/
).
-'
0
1/
t..,.....-"
10
~~P~LIIJS FO~ IC/lIBJh~E/4
+2.0
0:
J
VCE(.,,)@IC/IB· 10
0.5 0.7
L~ V
./
0.4
o
~
2.0
ffi
)17
'/
0
w
to
0.2
0.5
1.0
0.1
lB. BASE CURRENT (AMP)
FIGURE 11 - TEMPERATURE COEFFICIENTS
FIGURE' 10 - "ON" VOLTAGES
2.8
2.0
['.....
111'-
IC = 2.0 A"
0.01
50
,
T
0.7
1.0
2.0
IC. COLLECTOR CURRENT (AMP)
3.0
5.0 7.0
10
20
50
30
IC. COLLECTOR CURRENT (AMP)
FIGURE 13 - BASE CUTOFF REGION
FIGURE 12 - COLLECTOR CUT·OFF REGION
100
50
_
200
1
ffi
0:
f-
z
a
lO
E: E
1000 C
0:
:::>
<.>
0:
..'"'"
10
~
w
o
~
-'
-'
<.>
=
20
~ 5.0
0:
VCe= 40 V
I-- TJ = IS0 0 C
2.0
1.0
,
2sbc
0.5
~
0.2
+0.1
-0.1
-0.2
-0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
-0.4
-0.5
4-280
~}EV~RSE
0.1
+0.2
+0.1
_tORWARD
-0.2
-0.3
-0.1
VBE. BASE·EMITTER VOLTAGE (VOLTS)
-0.4
-0.5
NPN
PNP
2N6383 2N6648
2N6384 2N6649
2N6385 2N6650
15 AMPERE PEAK
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTORS
· .. monolithic complementary silicon Darlington transistors designed
for low and medium frequency power applications such as power
switching, audio amplifiers, hammer drivers, and shunt and series
regl :ators.
•
•
40-60-80 VOLTS
100 WATTS
High Gain Darlington Performance
True Complementary Specifications
•
*MAXIMUM RATINGS
Symbol
2N6383
2N6648
2N6384
2N6649
2N6385
2N6650
Unit
Collec[Qr·Emttter Voltage
VCEOlsus)
40
60
80
Vdc
Rating
Cullector·Emltter Voltage
VCEX
40
60
80
Vdc
Collector-Emitter Voltage
VCBO
40
60
80
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Continuous
IC
10
Adc
Peak 111""
ICM
15
IB
0.25
Adc
100
0571
Watts
W/oC
- - 6 5 to +200 _ _
°c
Collector Current
Base Current
Continuous
Po
Total Power Dissipation
@ TC
= 25°C
121
Derate above 2SoC
Operating and Storage Junction
TJ. T stg
-
Lr~
r~K
ESEATtN!-~
I
PLANE
Temperature Range (21
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Symbol
Max
Unit
ROJC
1.75
°CIW
TL
235
°c
Purposes. 1/32" from Case for 5 Seconds
• Indicates JEDEC Registered Data.
UNot JEDEC Registered.
111 Pulse W,dth
= 50 ms,
STYLE I.
PIN 1 BASE
2_ EMITTER
CASE_ COllECTOR
Duty Cycle,;; 10%.
(2) Exceeds JEOEC Registration for 2N6648, 2N6649, 2N6650.
JEOEC 'Registration gives Po = 70 W, TJ = 150°C.
DtM
•
B
C
Collector
Co "ector
Base 0-....--1
MILLIMETERS
MIN MAX
635
099
INCHES
MIN
MAX
39_37·
2t 08
762 0.250
109 0039
D
E
3.43
3040
1.177
F 29.90
G 10.67
11.18 0_420
H
533
5.59
0.2tO
0_655
1115
J 16.64
0_440
K 11.18 1219
Q
4_09 0.151
38'
R
- 26_61
Collector connected to case
CASE 11-01
!TO-3}
Emitter
Emitter
4-281
1560
0830
0.300
0.043
0135
1197
0440
0220
0615
0.480
0161
1050
2N6383,2N6384,2N6385,NPN,2N6648,2N6649,2N6650,PNP
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwISe noted)
Characteristic
Symbol
Min
Max
40
60
BO
-
-
-
1.0
-
-
0.3
3.0
-
10
40
60
80
-
40
60
BO
-
Unit
OFF CHARACTERISTICS
"Collector-Emitter Sustaining Voltage 11)
2N63B3,2N664B
2N63B4,2N6649
2N63B5, 2N6650
Collector Cutoff Current
(VCE
=
Vde
VCEO(sus)
(lC = 200 mAde, IB = 0
mAde
ICEO
Rated Value)
·Collector Cutoff Current
mAde
ICEV
(VCE = Rated VCEO(sus) Value, VBE(off) = 1.5 Vdc-)
(VCE = Rated VCEO(sus) Value, VBE(off) = 1.5 Vde, TC = 15UOC)
'"Emitter Cutoff Current
lEBO
mAde
(VEB = 5.0 Vde, IC = 0)
Collector-Emitter Sustmnmg Voltage 11)
2N63B3,2N664B
2N63B4, 2N6649
2N63B5, 2N6650
Collector-Emitter Sustaining Voltage (1)
(VBE(off) = 1.5 V, IC = 200 rnA)
Vde
VCER(sus)
(RBE = 100 H. IC = 200 mAl
Vde
VCEV(sus)
I
. 2N63B3,2N664B
2N63B4,2N6649
2N63B5, 2N6650
-
ON CHARACTERISTICS (1)
.. DC Current Gam
-
hFE
(IC = 5.0 Ade, VCE = 3.0 Vde)
(IC = 10 Ade, VCE = 3.0 Vde)
"Collector-Emitter Saturation Voltage
1000
100
20,000
-
Vde
VCE(s.t)
(IC = 5.0 Ade, IB = 0.01 Adcl
(IC= lOAde,lB =0.1 Ade)
"Base-Emitter On Voltage
-
2.0
3.0
-
2.B
4.5
VF
-
4.0
Vde
Cob
-
200
pF
"fel
20
-
-
hfe
1000
-
-
Vde
VBE(on)
IIC = 5.0 Ade, VCE = 3.0 Vde)
IIc = 10 Ade, VCE = 3.0 Vde)
Diode Forward Voltage
(IF = 10Ade)
'DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE = 0, f test = 1.0 MHz)
ItMagnitude of Common-Emitter Small-5ignal Short-Circuit
Current Transfer RatiO
IIc = 1.0 Ade, VCE = 5.0 Vde, f = 1.0 MHz)
Common Emitter Smail-Signal Short-CircUit Forward
Current Transfer RatiO
IIC = 1.0 Ade, VCE = 5.0 Vde, f = 1.0 kHz)
SECOND BREAKOOWN
Second Breakdown Collector Current with Base-Forward Biased
Second Breakdown Energy with Base Reverse·Blased
(L = 12 mH, RBE = 100 ll, VBE(off) = 1.5 Vde, Ie = 4.5 Ade)
(1)
Pulse Test: Pulse Width
::=
300 IJ,S. Duty Cycle
~
2% .
• Indicates JEDEC Registered Data.
4-282
2N6383,2N6384,2N6385,NPN,2N6648,2N6649,2N6650,PNP
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
10 K
- -
10 K
"-
1\
.1."L?5j;/
1\
1\
IC" I A\
-+150 oC .,
:./
/
JA
1\
r-....
i"--
,L(,
100
0.1
o
0.5
IC. COLLECTOR CURRENT lAMP)
FIGURE 3 - COLLECTOR·EMITTER SATURATION VOLTAGE
I
I
c
1.0
--VSE(sat)
c
~
1.5
--lcilaoIOO
---Icila'o 500
::
~
~
1.0
~
0.5
S
~
>
100
FIGURE 4 - BASE·EMITTER VOLTAGE
;::
'"~
50
10
la. aASE CURRENT ImA)
~ 1. 5
w
05
01
10
10 A
\5A
~
-JOIC
/
~
--
./'"
V~
I- ___ VBElon)
k!
I
I
V
-JOoC
I-
+15 0 C....
r=~50CV
+150oC
....-- l - f-""
-
;;:;p
I;:l
r-'rl
0
0.1
k-::"
0.5
IC. COLLECloR CURRENT lAMP)
0.1
10
0.5
1
10
IC. COLLECTOR CURRENT lAMP)
FIGURE 5 - SWITCHING TIME TEST CIRCUIT
(Shown fo,
FIGURE 6 - SWITCHING TIMES
NPN~
Vee
'=
10
20 Vdc
..
'I
~
AB = 200)( RL
IS1 = 182 "" le/500
r----
-r-. -., "
":'"
+VJU
"
"
-
V
'2
-v
0.1
10
1
f'" 200 Hz
IC. COLLECTOR CURRENT lAMP)
4-283
..... Id
2N6383,2N6384,2N6385,NPN,2N6648,2N6649,2N6650,PNP
FIGURE 7 - THERMAL RESPON!1E
o.1
~S
o. IF=:
o.5
0-0.5
-
!~ o.31--- ~IO.2
1-",
I-C
I--- f--
~
p[JUl
:.:::::::: ~
~~ O.2
0.1
§~ O. IF=-'= ~O.05
~~O.O1 =
.....,
";:'~O.03
2~
0.0
0.0 1
0.1
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
TJlpk) - TC - Plpk) 6JCI.)
t:J
:=~O.O51---0.02
':Vi
6JCh) - ,I') OJC
6JC -U50C/W
...... SINGLE PULSE
~UTY
CYCLE. 0 • '1/'2
0.01
0.2
I
I
0.3
0.5
0.1
1.0
2.0
3.0
5.0
LLlJ I I
1.0
10
20
I I I
30
50
10
100
200
300
SOD 100 1000
'. TIME Im~
for temperature.
TJ(pkl may be calculated from the data in Figure 7. At
high case temperatures, see Figure 9, thermal limitations will .
reduce the current that can be handled to values less than
the limitations imposed by second breakdown. Second breakdown limitations do derate the s'ame as thermal limitations.
Allowable current at the voltages shown on Figure 8 may be
found at any case temperature by derating linearly to 2OQoC.
There are two limitations on the power handling ability of
a transistor: av~rage junction temperature and second breakdown. Safe operating area curves indicate Ie-VeE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figu,e 8 is based on TC = 2SoC; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
FORWARD BIASED SAFE OPERATING AREA
FIGURE 8 - TC ~ 2SoC
1.5
"
10
,
dc'
----- ~~~~~~G
-
0.2
0.15
- -
FIGURE 9 - TC
"'1\
'"
10",
SECOND BREAKDOWN
-50",
WIRE L1MITE0- 1 m'
THERMAL LIMITATION
5 ms
=50ms
AT TC - 25°C
10
-
' ... ,
....
ok ...
~
.5
-
AT TC· 100·C
0.2
0.15
80
>
2
~
1.5
~
w
C
C
S
~
./
.....V
I-:- ~
1~
~C
O. 5
f-0
0.1
1\
V
V
V"
V
V
+1 50 0 C
1
0.2
0.5
10
IF. DIODE FORWARD CURRENT lAMPS)
4--284
-Sori.s-2N6385.2N6650
~
-
10
20
50
VCE. COLLECTOR·TO·EMITTER VOLTAGE IVOLTS)
co
'"
\.
- BONDING WIRE L1MITED~
- - - - THERMAL LIMITATION
2N6384.2N6649
FIGURE 10 - CE DIODE CHARACTERISTICS
~
--
SECOND BREAKDOWN
2N6383. 2N6648
LIMITED
~
.5
C
-
,
... ... .'\.
lOllS -......
'1 m,
VCE. COLLECTOR·TO·EMITTER VOLTAGE IVOLTS)
C
\. \.
,
5ms·
50
3
, ...
50~s
-
20
w
= lOOoC
...
r.-"r\ \ \
2N6383.2N6648
2N6384. 2N6649
2N6~85. 2N665 O
1
10
,
15
\
c.-~
80
2N6386, 2N,6387 2N6,388
PLASTIC MEDIUM-POWER
SILICON TRANSISTORS
DARLINGTON
· .. designed for general·purpose amplifier and low-speed switching
applications.
•
BAND 10 AMPERE
High DC Current Gain hFE =2500 (Typ) @ IC =4,0 Adc
Coliector·Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 40 Vdc (Min) - 2N6386
= 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
Low Coliector·Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N63B6
= 2.0 Vdc (Max)@ IC = 5.0 Adc - 2N6387, 2N638B
•
•
•
Monolithic Construction with Built·ln Base-Emitter
Shunt Resistors
•
TO·220AB Compact Package
•
TO·66 Leadform Also Available
NPN SILICON
POWER TRANSISTORS
40-60-80 VOLTS
65 WATTS
•
*MAXIMUM RATINGS
Symbol
2N63B6
2N63B7
2N63BB
Unit
VCEO
40
60
80
Vde
Collector-Base Voltage
VCS
40
60
80
Vde
Emitter-Base Voltage
VES
Rating
Collector-Emitter Voltage
Collector Current - Continuous
8.0
15
IC
Peak
Base Current
18
Total Power Dissipation @ T C = 250 C
Derate above 2SoC
Po
Total Power Dissipation
Derate above 2SoC
Po
@
·
T A - 25°C
Operating and Storage Junction,
TJ. Tstg
Temperature Range
·
,
.
·.
·
5.0
10
15
·.
.
·
10
15
250
65
0.52
2.0
0.016
Vdc
Ade
mAde
Watts
W/DC
Watts
W/DC
-4---65 to +150----"
°c
THt:RMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
1.92
DCIW
Thermal Resistance, Junction to Ambient
ROJA
62.5
°CIW
Characteristics
FIGURE 1 - POWER DERATING
TA TC
4.0 80
~
!;( 3.0 60
""
z
0
~
~
l:l
2.0 40
...........
is
'"3:
~ 1.0
o
o
~C
~
0t--..
20
.P
20
40
~
'~
60
80
100
T,TEMPERATURE ('C)
"'-.......::::
120
~
140
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
DIM MIN MAX
A 15.11 15.75
B
9.65 10.29
C
4.06
4.82
D
0.64
0.89
F
.3.61
3.)3
G
2.41
2.61
H
2.19
3.30
J
0.36
0.56
K 12.10 14.21
L
1.14
1.21
N
4.83
5.33
a 2.54 3.04
R
2.04
2.79
S
1.14
1.39
T
5.97
6.48
U
0.16
1.21
v 1.14
......
~
STYLE 1:
PIN 1.
2.
3.
4.
160
4-285
NOTE.
1. DIM. L & H APPLIES
TO ALL LEADS.
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.141
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221A'()2
TO·220AB
2N6386 2N6387 2N6388 NPN
*ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Max
40
60
80
-
Unit
OFF CHARACTERISTICS
Collector· Emitter Sustaining Voltage (1)
(lC = 200 mAde, IB = 0)
Collector Cutoff Current
(VCE = 40 Vde, la = 0)
(VCE = 60 Vde, la = 0)
(VCE - 80 Vde, la = 0)
•
Collector Cutoff Current
(VCE =40 Vde, VEa(off)
(VCE = 60 Vde, VEa(off)
(VCE = 80 Vde, VEa(off)
(VCE = 40 Vde, VE8(off)
(VCE = 60 Vde, VEa(off)
(VCE =.80 Vde, VEa(off)
Emitter Cutoff Current
(VaE = 5.0 Vde, IC = 0)
Vde
VCEO(sus)
2N6386
2N6387
2N6388
ICEO
-
mAde
-
2N6386
2N6387
2N6388
1.0
1.0
1.0
-
!lAde
ICEX
-
= 1.5 Vde)
2N6386
= 1.5 Vde)
2N6387
= 1.5 Vde)
2N6388
= 1.5 Vde, TC = 125°C) 2N6386
= 1.5 Vde, TC = 125°C) 2N6387
= 1.5 Vde, TC = 125°C) 2N6388
300
300
300
3.0
3.0
3.0
-
-
IEaO
mAde
mAde
5.0
ON CHARACTERISTICS C1I
DC Current Gain
(lC = 3.0 Ade, V CE = 3.0 Vde)
(lC = 5.0 Ade, VCE = 3.0 Vde)
(lC = 8.0 Ade, V CE = 3.0 Vde)
(lC = 10 Ade, VCE '" 3.0 Vde)
Collector~Emitter
1000
1000
100
100
Saturation Voltage
VCE(satl
= 3.0 Ade, la = 0.006 Ade)
= 5.0 Ade, la = 0.01 Ade)
= 8.0 Adc, la = 0.08 Ade)
= 10 Ade,IB = 0.1 Ade)
2N6386
2N6387, 2N6388
2N6386
2N6387, 2N6388
Base·Emitter On Voltage
(lC = 3.0 Ade, VCE = 3.0 Vde)
(lC = 5.0 Ade, VCE = 3.0 Vde)
(lC = 8.0 Ade, VCE = 3.0 Vde)
(lC = 10 Ade, VCE = 3.0 Vde)
2N6386
2N6387, 2N6388
2N6386
2N6387, 2N6388
(lC
(lc
(lC
(lC
-
hFE
2N6386
2N6387, 2N6388
2N6386
2N6387, 2N6388
20000
20000
-
Vde
-
2.0
2.0
3.0
3.0
-
VBE(on)
Vde
-
2.8
2.8
4.5
4.5
-
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lC = 1.0 Ade, VeE = 5.0 Vde, I test = 1.0 MHz)
(hfe(
20
Output Capacitance
Cob
-
200
pF
hie
1000
-
-
~
(VC8 = 10 Vde, IE = 0, f = 1.0 MHz)
Small..signal Current Gain
(lC = 1.0 Ade, VCE = 5.0 Vde, I = 1.0 kHz)
• Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width .. 300 !lS, Duty Cycle .. 2.0%.
FIGURE 3 - SWITCHING TIMES
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
7.0
5.0
Vee
+30 v
"
RO & He VARIED TO OBTAIN DESIRED CURRENT LEVELS
0,. MUST BE FAST ReCOVERY TYPES, I.g.,
MBD5300 USED ABOVE 18 "" 100 rnA
MSD610D USED BelOW IS" 100 mA
,
J.O
ts
RC
=
SCOPE
~1.0
b-.
tf
I""'"
... 0.7
~
t,
~.
O.J
0.2
forldlndlr.DI is disconnected
IndV2"'D
Vee=JOV
lells = 250
lSI = IS2
TJ=25 DC
0.1
0.07
0.1
4-286
0.2
rtd
------
r-
1.0
2.0
0.5
Ic. COLLECTOR CURRENT lAMPS)
1- ...
5.0
10
2N6386 2N6387 2N6388 NPN
FIGURE 4 - THERMAL RESPONSE
~
1.0
~ O. 1
0<0.5
~ o. 5
~
~
0, 3
z
o. 2
~ 0.01 - 0.05
0.05
- 002
I- 0.03
l-
ts
~
0.02f-'
lo.ot::::
~ 0.0 1"""" f-[
I-
0.01
-::;ii'
;;;;;..-
0.1
ffi
'"
-- '"
-
02
~
~ o. 1
Ptpk}
~~~ =
.,..,...
I
l-
0.05
0.1
IIIII
os
02
•0
2.0
SO
10
I
TJtpk}- TC
=Ptpk} ZOJCtt}
11/'2
DUTY CYCLE, 0
SI~G~E rlLr~ I
002
tSUL
ZeJCtt} < Ittl ROJC
ROJC < 1.92· C/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
I
20
I I I IIIII
so
100
I
I
I
I I I II
200
500
l.ok
I. TIME (ms)
FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves Indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 IS based on TJ(pkl = 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
TJ = ISo·C .
---BONDING WIRE LIMITED
for duty cvcles.o 10% provIded TJ(pkl
~~~~illill
@TC =lo0.C
: 2N6386
---THERMALLY
LIMITED
--SECOND BREAKDOWN LIMITED: 2N6381
CURVES APPLY BELOW RATED VCEO- 2N6388
< 150°C.
TJ(pkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown
0.03 ~--.1.--:':--'--:'::--'-=,=-'-'--':':--L.:'::-~---o~L:':...Ll,.u
1.0
2.0
4.0
6.0
10
20
40
60 80
VeE' COLLECTOR·EMITTER VOLTAGE IVOLTS}
FIGURE 6 - SMALL·SIGNAL CURRENT GAIN
FIGURE 7 - CAPACITANCE
300
10.000
z
;;;:
'"
3000
2000
~
1000
...a
so0
..
z
'"
..
~
..
ill
E
T~ =~5~J
SOD0
200
-
~
w
<>
z
TC - 2S·C
300
200
..
~ 100
U
VCe= 4.0 Vdc
IC =3.0 Adc
100
~
C.b
C,b
10
U
0
........
,....
......
0
0
0
10
1.0
2.0
5.0
10
20
50
100
200
SOD 1000
I, FREQUENCY (kH,)
30
0.1
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-287
20
50
1110
•
2N6386 2N6387 2N6388 NPN
FIGURE 8 - DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
20.000
~
~
w
3000
2000
%
500
300
200
~
2.S
\
:-.,:,
1
~
'"
~
8
\
1.8
0
;;Z
./
0.1
r:-yo
SS OC
I
0.2.
0.3
0.5 0.7
1.0
.2.0
3.0
5.0 7.0
> 1.0
0.3
10
"-
1.4
~
r-..
0.5
0.7
1.0
3.0
5.0
7.0
10
;;G +4.0
~ +3.0
2. 5
"lcilB" hFE/3
!;;
~
Q +2. 0
i
1./1
v.: V
~ 2.0
w
b::::: ~
VBE(jt)@ ICIIB ~ 250
L5
>
,,:
'"
;:) -1.0
~I-"'"
VCE(sa!)@ ICIIB ~ 250
I
O. 5
01
02
03
OS
07
2.0
10
-3.0
i
-4.0
>-
3.0
5.0
7.0
10
-5. 0
0.1
'-:::;:::::V
1
~ -2. 0
25
i':
-55°C to 25°C
"OVC for VCE(sat)
!;;:
........ V
VBE@VCE - 4 0 V
1.0
+1.
25 DC to lS00C
0
w
/
~
k-"
2S0Cto15~
0.2
0.3
II II
0.5 0.7
1.0
2.0
-550C to 250C'
3.0
IC. COLLECTO R CURRENT (AMP)
FIGURE 13 - DARLINGTON SCHEMATIC
FIGURE 12 - COLLECTOR CUT-OFF REGION
105
FREVERSE== r-FORWARO
COLLECTOR
~
~
13
'"
0
10 3
---,
,----.-,
r=VCe=30V
L
102
~
10 1
~
100
8
I
(
(
(
BASE
I- TJ ~ 150°C
I
I
I
I
I - - lOODe
I-10- 1
-0.6
__ ...J
25°C
EMITTER
-0.4 -0.2
+0.2
+0.4
+0.6
+0.8
+1.0
+1.2
+1.4
VBE. BASE EMITTER VOLTAGE (VOLTS)
4-288
1/
1/
V
;.-
-H-r
OVB for VBE
IC. COLLECTOR CURRENT (AMP)
104
30
+5. 0
TJLsob
2.2
'"w
>>-
2S 0C /
~ 1000
I
4.0A
0
..........
I
13
III
IC~2.0A
~
....-
. Tr 150°C..........
~
II
VCE - 4.0V
'"..,
..,c
3D
1-
ul
~
20
-
_.
VCE = 4.0 V
0.5 0.1
"-"
~
2.0 3.0
5.0 1.0
1.0
IC. COLLECTOR CURRENT (AMP)
10
\
20
\
1.0
~ o.6
8
0.4
>
00.02 0.03
1.8
/ /
1.4
~ 1.2
'"
~
~ 0.6 I-VBE@lVCE= 2.J V
>'
'-I'"
f·,
0.4
0.2 f-JcEi..
00.3
t! ~ I~/!~
0.5 0.1
1.0
V
f
+250 to
§ +0.5
w
~
/
II
II
-0.5
~
~ -1.0
-1.5
...i -2.0
10
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMP)
20
I--
~
/
--/
j
V
./
-r
J..
t
I III
-55 0CTO +2ho
II
-2.5
0.3
30
.+25~CTm
OVB FOR VBE
r5
i'!}
-~0:;tT-
'OVe FOR VCE( .. t)
8
0.5 0.1
1.0
2.0
3.0
5.0 7.0
10
20
30
IC. COLLECTOR CURRENT (AMP)
FIGURE 13 - BASE CUT-OFF REGION
10 1
TJ'+150o
/
VCE=40V=
TJ = +150oC
Y
./
/
+1.0
FIGURE 12 - COLLECTOR CUT,OFF REGION
10 1
2.0
1.0
/
U
V
1/
I:::::
0.8
~
fii
iI/
-
VBE( .. U@lICilB= 10
0.5 0.7
'APPLIES FOR IcilB" hFEI2
~ +2.0
>
~ +1.5
/X
>
0.3
+2.5
VI
TJ = 250C
;;; 1.0
0.2
FIGURE 11 - TEMPERATURE COEFFICIENTS
1.6
U)
0.050.07 0.1
lB. BASE CURRENT (AMP)
FIGURE 10-"ON"VOLTAGE
2.0
""
I'
~ O. 2
30.
";'\.
'"
o O.B
""I"
20A
\
1.4
1li
'.\
TJ = 250C
\ lOA
~ 1.2
"
K' ,~.....
VCE = 2.0 V
III
10
0.3
•
- ::::f:::
I
l'
o
5.0 A
IC = 2.0A
~ 1.6
~
,
\
1.8
+1000C/
-+100 oC
/
1
,/
1
VCE 40 V I-+250C
~~EVERSE
./
-+250C
FORWARO
::oo::==F REVERSE
V
10- 3
+0.2
+0.1
0
-0.1
-0.2
-0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
-0.4
-0.5
4-292
10-4
+0.16
FORWARO
\
+0.08
-0.08
-0.16
VBE. BASE·EMITTER VOLTAGE (VOLTS)
-0.24
2N6486 2N'6481 2N6488 NPN
2N,6489 2N6490 2N6491 PNP
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
15 AMPERE
designed for use in general-purpose amplifier and switching
applications.
• DC Current Gain Specified to 15 Amperes
hFE = 20-150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-60-80 VOLTS
75 WATTS
e Collector-Emitter Sustaining Voltage VCEO (sus) = 40 Vdc (Min) - 2N6486. 2N6489
= 60 Vdc (Min) - 2N6487. 2N6490
= 80 Vdc (Min) - 2N6488. 2N6491
•
•
High Current Gain - Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
e TO-220AB Compact Package
•
TO-66 Leadform Also Available
*MAXIMUM RATINGS
Svmbol
2N6486
2N6489
2N6487
2N6490
2N6488
2N6491
Unit
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCS
50
70
90
Vdc
Emitter-Base Voltage
VES
IC
Rating
Collector-Emitter Voltage
Collector Current
Continuous
Base Current
.
PD
@TC=250C
Derate above 25°C
Total Power Dissipation
15
..
..
la
Total Power Dissipation
.
.
5.0
5.0
..
75
0.6
.
1.a
0.014
...
..
PD
@TA=250C
q
Derate above 25°C
Operating and Storage Junction
Temperature Range
_-6510+150_
TJ. T S1g
Vdc
Adc
Adc
Watts
W/oC
Watts
W/oC
°c
THERMAL CHARACTERISTICS
Svmbol
Max
Unit
Thermal Resistance. Junction to Case
ROJC
1.67
°C/W
Thermal Resistance. Junction to Ambient
ROJA
70
°C/W
Characteristic
*Indicates JEDEC Registered Data
TA
TC
4.0
80
i_
z
3.0
FIGURE 1 - POWER DERATING
I---
r-...
~
2.0
40
........ r-...
w
'"
s:
~
rP
1.0
A
B
_.-
"'"
o
~
TA
'"
r--.......
20
'"
............
40
60
80
r""
o
N
Q
R
I"'---. ~
100
C
F
G
H
J
K
L
TC
0
20
BASE
COLLECTOR
EMITTER
COLLECTOR
DIM
"I'-.
60
STYLE 1:
PIN 1.
2.
3.
4.
S
T
~~
120
140
U
160
TC. CASE TEMPERATURE (DC I
4-293
V
NOTE:
1. DIM. L& HAPPLIES
TO ALL LEADS.
MILLIMETERS
INCHES
MIN MAX
MIN MAX
15.11 15.15 0.595 0.620·
9.65 10.29 0.38lJ 0.405
4.06
4.82 0.160 0.190
0.64
0.89 0.025 0.035
3.61
3.13 0.142 0.147
2.41
2.67 0.095 0.105
2.79
3.30 0.110 0.130
0.36
0.56 0.014 0.022
12.70 14.27 0.500 0.562
1.14
1.27 0.045 0.050
4.83
5.33 0.190 0.210
2.54
3.04 0.100 0.120
2.04
2.79 0.080 0.110
1.14
1.39 0.045 0.055
5.97
6.48 0.235 0.255
0.16
1.27 0.030 0.050
1.14
0.045
CASE 221A-02
TO-220AS
2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
I
I
Characteristic
Svmbol
Min
Max
40
60
80
-
50
70
90
-
-
1.0
1.0
1.0
-
500
500
500
5.0
5.0
5.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC
2N6486. 2N6489
2N6487. 2N6490
2N6588.2N6491
Colleetor·Emitter Sustaining Voltage (1)
(lC = 200 mAde. VSE = 1.5 Vde)
•
Emitter Cutoff Current
(VBE = 5.0 Vde, IC
mAde
ICEO
= 20 Vde. IS =0)
=30 Vde. IS =01
= 40 Vde.IB =0)
Collector Cutoff Current
(VCE = 45 Vde. VES(off)
(VCE = 65 Vde. VEB(oll)
(VCE = B5 Vde. VEB(off)
(VCE = 40 Vde. VE8(off)
(VCE = 60 Vde. VEB(off)
(VCE = 80 Vde. VEB(off)
Vde
VCEX
2N6486. 2N6489
2N6487. 2N6490
2N6488.2N6491
Collector Cutoff Current
(VCE
(VCE
(VCE
Vde
VCEO(sus)
=200 mAde. IS =0)
2N6486.2N6489
2N6487. 2N6490
2N6488.2N6491
/lAde
ICEX
= 1.5 Vde)
2N6486. 2N6489
= 1 .5 Vde)
2N6487. 2N6490
= 1,.5 Vde)
2N6488. 2N6491
= 1.5 Vde. TC = 150°C) 2N6486. 2N6489
= 1.5 Vde, TC = 150oCI2N6487, 2N6490
= 1.5 Vde, TC = 150oCI2N6488, 2N6491
-
lEBO
=0)
mAde
1.0
mAde
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
Collector-Emitter Saturation Voltage
20
5.0
150
-
1.3
3.5
-
-
1.3
3.5
Base-Emitter On Voltage
IT
5.0
-
MHz
hIe
25
-
-
Current Gain - Bandwidth Product (2)
= 1.0 Ade. VCE = 4.0 Vde, I test = 1.0 MHz)
Small-Signal Current Gain
(lC
Vde
Vde
VSE(on)
(lc = 5.0 Ade, VCE = 4.0 Vdel
(lC = 15 Ade. VCE = 4.0 Vdel
DYNAMIC CHARACTERISTICS
(lC
-
VCE(sat)
(lC ~ 5.0 Ade. IB =0.5 Adc)
(lC = 15 Ade, IB = 5.0 Ade)
,
-
hFE
= 5.0 Ade, VCE = 4.0 Vde)
= 15 Ade, VCE = 4.0 Vdc)
= 1.0 Ade.. VCE = 4.0 Vde, I = 1.0 kHz)
*Indlcates JEDEC Registered Data.
(1 )Pulse Test: Pulse Width .. 300 /lS, Duty Cycle .. 2.0%.
(2)IT = Ihlel Oltest.
'
FIGURE
2-
FIGURE 3 - TURN·ON TIME
SWITCHING ,TIME TEST CIRCUIT
vee
+30
100 0
v
500
125
,",5
+1:~J __ 1__ ,
-10
:.:--
Re
1
Scope
..--
Ir
j-.::
0
~
L
O~
v
51
01
0
NPN
--PNP
TC=25 0 C
OfVCC = 30 V
tIC/IB = 10
0
0,2
0,5
t r• tf E;; 10 ns
Duty Cycle: 1.0%
-4 V
RS and RC varied to obtain desired current levels.
170r PNP reverse all polarities.
01 must be fast: recovery type, e.g.;
MB05300 used ebove 18 ~ 100 mA
MSD6100 used below 18 ~ 100 mA
4-294
,...
Id@VBE loff) ~ 5,0 V
=
1-:,5,0
2,0
1.0
IC. COLLECTOR CURRENT IAMPI
10
20
2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP
FIGURE 4 - THERMAL RESPONSE
~::;
a
~
o. 5
..
7
o
D ~ 0.5
~ o. 3
z
r-
~ 00 7 -
0.05
~
001
~
5
00 0.03
>~ 001-'"
;;;
Plpkl
~~~
~ SljHnlLuL
,.....
001
1
005
001
TJ(pkl - TC ~ P(pkl ZOJC(II
~
OUTY CYCLE. 0
' 1111
01
01
05
10
10
Z,'JC(1I ~ r(11 ROJC
ROJC ~ I.S)' cm Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
tJUl
;...--
z
.......,
~ 00 I~
>-
I
~
:;;0-
~I"""
01
~ o. I
-
-::
01
1
~
t,
5.0
11111
I I
10
I I 111111
50
10
100
I I
I I J Hi
200
500
LOt
TIME ImsJ
FIGURE 5 - ACTlVE·REGION SAFE OPERATING AREA
a
c:
~
lOcip,-
.....
10
~ 5.0
"'~
TJ 1500 C
2.0 -SECONO BREAKDOWN LIMITED ....
-·-BONOING WIRE LIMITED
- - -THERMALLY LIMITED @TC -15'C
1.0 CURVES APPLY BELOW RATED VCEO
::
0.5
~
~
1.0 m~-
S
depending on conditions. Second breakdown pulse limits are valid
5.0m,=
for duty cycles to 10% provided T J!pkl .;;; 1500 C. T Jlpk) may be
lNS48S.1NS489
lN64B7.1NS490
2NS488. 2N6491
:} 02
O. l
1.0
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown.
Safe operatmg an~a curves indicate le·VeE limits of the transistor
that must be observed for reliable operatton; I.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The datd of Figure 5 is based on T J(pk) =: 150°C; T C is variable
500p'=
calculated from the data In Figure 4 At high case temperatures.
thermal limItations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown
-de-
4.0
40
SO
10
10
VCE. COLLECTOR·EMITTER VOLTAGE (VOL TSI
80
FIGURE 6 - TURN·OFF TIME
FIGURE 7 - CAPACITANCES
500 0
1000
-
1000
~ 500
;::
~~
1
--NPN
200 I-- - - PNP
f- VCC'30V
ICI' S'10
lao
'SI-IS2
TJ' 250 C
SO
700
w
~ 300
~ '-:.: ;:-,..
-
>!:
Cob
.-:::::-::::::
,
~'
~
-
-
-
~ 200
IDa
F
f::
0.2
0.5
1.0
1.0
5.0
IC. COLLECTOR CURRENT (AMPI
-
I---.
~
~
Cob
- - NPN
PNP
Tr 250C
....
r--,
...... 1....
ro-
r-
-
70
10
10
4-295
50
0.5
1.0
5.0
2.0
10
VR. REVERSE VOLTAGE IVOLTSI
20
50
•
2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP
NPN
2N6486,2N6487,2N6488
200
I
FIGURE 8 - DC CURRENT GAIN
-
500
PNP
2N6489, 2N6490, 2N6491
500
TJ -150'C
~,
IT'- ['...
~ 100
'--
~ 50
•
;
:::::--.
25'C
-55'C
0
......
I"-.
'"''"=> ,
g
TJ-150'C
....
0'--
-55'C
<.:J
....
- l - t--
20 a
"r-.
20
."'~
VCE-2.0V
10
5.0
0.2
.....
0
~
VCE - 2.0 V
10
5. 0
2.0
5.0
1.0
IC. COLLECTOR CURRENT (AMP)
0.5
10
20
0.5
0.2
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (AMP)
FIGURE 9 - COLLECTOR SATURATION REGION
ti)
.:;
2.0
J
~ 1.B
UJ
~
'"ffi
\
w 1.6
1.4
'"
.8
0.4
1.4
:;
1\
\
'" 1.2
>
a:
w
Ic -1.0 A
::E
~ 0.8
0.6
TJ - 25'C
II
II
<.:J
1.2
'"~
IIiL
1.8
'"
~
1.6
~. 1.0
B.O A
4.0 A
~
1.0
~
a:
0.8
g
.'".
10
5.0
500
50
100
200
lB. BASE CURRENT (rnA)
20
1000
2000
\
"
0
5.0
5000
8.0 A
-
0.6
0.4
g
0
4.0 A
IC -LOA
8W 0.2
~ 0.2
>
2.0
~
TJ - 2;'C
10
500
50
100
200
lB. BASE CURRENT"lmAi
20
1000 2000
5000
FIGURE 10 - "ON" VOLTAGES
2.B
2.8
2.4
-
TJ - 25'C
~
'"
~
~ 2.0
'"
~
//
'/
~ 1.6
;'"
>
1.2
VBE(sat)-IC"B -10
>-
O.B
VBE@VCE-2.0V
0.4
o
-
0.2
-
VCE( ..t)@ICIIB-l0
0.5
LI
2.4
--
w
'">.
>.
/
h
//
TJ - 25'C
1
1
1
1.6
«
i--'
1.2
20
...-::P'
VBE(sat) @ICIIB - 10
=
VBE@VCE-2.0V
-
VCE(sat)@ICIIS -10.
0.2
0.5
1.0
.....2.0
i'
5.0
IC. COLLECTOR CURRENT (AMP)
4-296
/
O.B
o
10
/
~
I
0.4
...... f-'"
5.0
1.0
2.0
IC. COLLECTOR CURRENT (AMP)
1 1
---l
<.:J
:;
~
2.0
10
20
2N6486 2N6487· 2N6488 NPN
2N6489' 2N6490 2N6491 PNP
NPN
2N6486.2N6487.2N6488
PNP
2N6489. 2N6490. 2N6491
FIGURE 11 - TEMPERATURE COEFFICIENTS
U
l....
ffi
U
+4.5
'APPLIES
f--
FOIRII~/IB < hFE/4
'G +4 5
~ +3.5 t--
+3.5
I
'APPLIES FOR Ic/lB < hFE/4
....
~
+2.5
/,
I
it
S +1.5 r-w
~ +0.5
~
0
~
-0. 5
r-OVC FOR VCE('at)
250C TO 1500C
r-- r-
-55~C T9 25,OC, I I '
ili....
f-- 'VB FOR vBE
1
~-1.5 f-250no 1500C
U
S
/
IP"
250~TO ~O':;'
w
c:: +0. 5
::>
~
~ -0.5
./
2.0
-55°C TO 25°C
i-1. r5
5.0
10
0VB FOR VBE
V
L
I--"'i"
~I-'
-55°C TO 25°C
I I I I
-2.5
0.2
20
~
250~O~
i'B
I--'"
1.0
0.5
1/
1
L
~ +1. 5
-155 : CITIi1"C - f -
-2.5
0.2
/
I
'OVC FOR VCE\'at)
u:
/
-
I II
~ +2.5
2.0
5.0
1.0
IC, COLLECTOR CURRENT (AMP)
0.5
IC. COLLECTOR CURRENT (AMP)
10
20
-0.4
-0.5
FIGURE 12 - COLLECTOR CUTOFF REGION
1000
10.00 0
0
0
VCE-30V
I-~"-c
o
.
TJ' 150°C
0
I- TJ' 150°C
0
f=
IF
00 11==
100°C
REVERSE';;;;;;
'/
-IC-ICES
J.;;;;;;; jo=FORWARO
I-- t- 100°C
30V- I--
VCE
L
0
IC =ICES
~ o. 11-=
F= 25°C
REVERSE ... \- f=FORWARO
I-- ~250C
0.00 1
-0.2
0.0 1
-0.1
+0.1
+0.2
+0.3
+0.4
+0.5
VBE. BASE·EMITTER VOLTAGE (VOLTS)
+0.2
-0.1
+0.1
-0.2
-0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
120
140
TJ, JUNCTION TEMPERATURE (OC)
TJ. JUNCTION TEMPERATURE (OC)
4-297
•
2N6495
NPN
NPN SILICON POWER SWITCHING TRANSISTOR
. Double Diffused epitaxial mesa technology combining high-speed
switching with rugged power handling capability.
10AMPERE
POWER TRANSISTOR
• High-Speed Switching Timeston = 350 ns (Max)
toft = 350 ns (Max)
•
•
NPN SILICON
80 VOLTS
70 WATTS
Low Collector-Emitter Saturation Voltage VCE(sat) = 0.75 Vdc (Max) @ IC = 5.0 Adc
= 1.5 Vdc (Max) @ IC = 10 Adc
• Current-Gain-Bandwidth Product fT = 15 MHz (Typ) @ IC = 5.0 Adc (See Figure 1)
• High Safe Operating Area - Full Power Rated to VCE = 20 Vdc
Designed for Use in:
• Switching Control Amplifiers
• Switching Regulators
• Converters
• Inverters
• Power Oscillators
*MAXIMUM RATINGS
Svmbol
Value
Unit
VCEO
80
Vdc
Collector·Base Voltage
VCS
150
Vdc
Emitter-Base Voltage
VES
6.0
Vdc
IC
10
20
Adc
IS
5.0
Adc
Rating
Collector-Emitter Voltage
Collector Current - Continuous
- Peak
Base Current
Total Device Dissipation @ T C =
Derate above 2SOC
25 0 C
. Operating and Storage Junction
T~mperatur8
Po
70
0.4
Watts
W,oC
TJ.Tstg
-65 to +200
°c
~AU-
tL=--~~=
t I
--
E
SEATING PLANE
---F--
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
"Indicates JEDEC Registered Data.
CASE: COLLECTOR
MILLIMETERS
OIM MIN MAX
8 11.94 12.70
C
6.35 8.64
O.7t 0.86
D
E
1.27 1.91
F 24.33 24.43
G 4.83 5.33
H 2.41 2.67
J 14.48 14.99
K 9.14
1.27
P
Q
3.61
3.86
S
8.89
T
3.68
U
15.75
FIGURE 1 - CURRENT·GAIN-BANDWIDTH PRODUCT
:z:
50
~
t;
::0
g
g:
30
...... r-
:z:
b
~
~z
~
,.:.
20
to
.
ill
.. 7.0
i3
..,: 5.0
0.1
-
I'-...
.........
"
\
--
f-l0MH,
VCE-l0V
TJ - 25"C
-
All JEOEC Dimension. and and Notes Apply.
I I
0.2
INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
D.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360 0.050
0.142 .1 2
0.350
- 0.145
0.620
0.3
0.5 0.7 1.0
2.0 3.0
IC. COLLECTOR CURRENT lAMP)
5.0 7.0
4-298
10
CASESO-02
TO·68
2N6495
*E LECTRICAL CHARACTERISTICS (TC: 250 C unle •• otherwise noted.)
I
I
Characteristic
Max
Unit
80
-
Vde
100
5.0
/lAde
mAde
IESO
-
100
nAde
hFE
10
60
-
-
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
VCEO(sus)
(lC =.100 mAde. IS = 0)
Collector Cutoff Current
(VCE: 140 Vde. VSE(off) = 1.5 Vde)
(VCE: 70 Vde. VSE(off): 1.5 Vde. TC
ICEX
=2000C)
Emitter Cutoff Current
(VSE = 6.0 Vde. IC 0)
=
ON CHARACTERISTICS
DC Current Gain
(lC = 10 Ade. VCE = 3.0 Vde)
Vde
Collector-Emitter Saturation Voltage
(lC = 10 Ade. IS = 1.0 Ade)
(lC = 5.0 Ade. IS: 1.0 Ade)
VCE(sat)
-
1.5
0.75
Base-Emitter Saturation Voltage
(lC = 10 Ade. IS = 1.0 Adel
VSE(satl
-
2.2
Vde
Turn.()n Time
(VCC = 30 Vde. IC = 10 Ade. lSI = 1.0 Ade!
ton
-
350
ns
Turn.Qff Time
(VCC = 30 Vde. IC = 10 Ade.ISl = IS2 = 1.0 Ade!
toff
-
350
ns
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 1.0 Ade. VCE
=10 Vde. f = 10 MHz!
SWITCHING CHARACTERISTICS
"Indicate. JEOEC Registered Dot•.
FIGUR E 2 - SWITCHING TIME TEST CIRCUIT
F IGUR E 3 - TURN-ON TIME
Vee
1000
700
500
+30 V
RC
300
SCOPE
RB
""'-
200
~
!100
!
",.11< IOn.
DUTY CYCLE = 1.0'lI
01
70
_' 50
lellB =10
TJ' 25°C
~"'VCC-30V
-
-
Id@VBE(ofl)"O
30
20
-3.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYpe. 09:
MBD5300 USED ABDVE IB" 100 mA
MSDB100 USED BELOW IB" 100 mA
FOR", and .... OIlS DISCONNECTED AND V2. O.
10
0.01
4-299
"0.02
0.1
0,2
r-
0.5
1.0
2.0
0.05
IC. COLLECTOR CURRENT (AMP)
5.0
10
2N6495
Inn
FIGURE 4 - THERMAL RESPONSE
w
1.0
z
~
iii
0.7 1=0 = 0.5
i __
0.3
0.2
u
0.5
~
0.2
...... ~
w C
",w
~ ~ o. 1
~ ~ 0.01
~ ~ 0.05
t=
'" 0.03 r-~
......
---C'2J
DUTY CYCLE. D = ,,1'2
0.02
i
II IIIII
0.05
0.02
0.01
0 CURVES APPLY FOR POWER PULSE TRAIN SHOWN
READ TIME AT'1
TJlpk) = TC = Plpk) ROJCltI
=
0.05
0.02
ROJCIt) ",1') ROJC
ROJC" 2.S"CM
Plpk)
~
~ fQ.i;j'
A"
.... % SINGLE PULS<
0.0 1
>
•
L
,
./" /'
0.1
I-~
~~
0.1
1.0
0.5
0.2
2.0
5.0
I I
10
50
20
100
200
500
1000
'. TIME 1m,)
FIGURE 5 - ACTIVE·REGION SAFE·OPERATING AREA
..
tH·ll' ..... ....
20
10
~ 5.0
i
S.Dms
2.0
5
_ 0.2
o
~ D, 1 ==
"-
-
~
"''"
THERMAL ......
DERATING "
40
.......
C
"
20
.........
~
o
50
20
30
2.0 3.0
5.0 7.0 10
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
70
I ...........
o
100
20
100
120
140
160
lBO
200
1000
leliB = 10
IBI = IB2
TJ = 250 C
200 0lc::..!,
"
BO
FIGURE 8 - CAPACITANCE
FIGURE 7 - TURN·OFF TIME
700
60
TJ(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations ,will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown. Second breakdown limitations do not derate
the samefas thermal limitations. Allowable current at the voltages
shown on Figure 5 may be found at any case temperature by
using the appropriate curve on Figure 6.
300 0
]: 500
40
Te. CASE TEMPERATURE IOC)
There are two limitations on the povver handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
The da.a of Figure 5 is based on TC = 250 C; T Jlpk) is variable
depending on power level. Second breakdown pulse limits are
vali~ for duty cycles to 10% but must be derated for temperature
according to Figure 6.
100 0
r-...
.......
'";::z
0.05
0.0 2
1.0
..........
r........
60
";::
SECJNO
BREAKDOWN DERATING
:"-.
0
I-
L
.....r-..
...........
BO
""'"
de .......
TC - 2SoC
BONDING WIRE LIMIT
THERMAL LIMIT ISINGLE PULSE)
- - - - SECOND BREAK~OWN LIMIT
CURVES APPLY BELOW
RATED VeEO
-
~ t-....
lOOP"
."
" "I
~ 1.0
r'
soopl'-
1.0ms
l-
'"
FIGURE 6 - POWER OERATING
100
700
TJ=2S0C
Cib
500
'f@VCE-30V
~ 30 0
r-..
......
~. 20 0
l- tt...... r-.
100
100
0
0
30
0.01
70
Co;;'"
50
0.02
0.05
0.1
0.2
0.5
1.0
2.0
IC. COLLECTOR CURRENT lAMP)
5.0
10
4-300
0.1
0.2
0.5
1.0
2.0
5.0
10 ,20
VR. REVERSE VOLTAGE IVOLTS)
50
100
2N6495
F.lGURE 9 - DC CURRENT GAIN
FIGURE 10 - COLLECTOR SATURATION REGION
400
VCE' 3.0 V
-
200
...... 1'-
'"
2J,C
40
~
~
"'
-SS'C
~
r-..
0
4
~
0.2
0.3
O.S 0.7 1.0
2.0 3.0
IC. COLLECTOR CURRENT (AMP)
S.O 7.0
0
2.0
10
S.OA
I-
IDA
-
S.O
SOD
1.0 k
'\.
......
20
SO
100
200
lB. BASE CURRENT (rnA)
10
2.0 k
FIGURE 12 - TEMPERATURE COEFFICIENT
+2. S
TJ= 2S'C
~
"
"APPLIES FOR IcIIB" hFE14.0
+2.0
.E, +1.5
1.6
~
~
ffi
00
~
\
8 o. 2
FIGURE 11 "ON" VOLTAGE
2.0
IC = 0.2SA 1.0A.- 2.SA
TJ ·2S'C
II
o. B
>
20
0.1
Jl
III
III
1.0
'">
~
I
I
~ o.6
-
c
W
~
~
100
~ 60
I-
'"
lSJ,C
z
l-
II II
II II
w
;;:
i
':;
'" 1.2
2:
T~ =
-
1.4
en
+1.0
2S'C to lS0'C
G
1.2
~ +0.5
__ r--..... ~~
~
':;
-n
S
I-
VBE{satJICIIB = 10
~ O.B
"ave I" VCE(".)
....... r--
-SS'C to 2S'C
w
~ -0.5
,:
I-
i
~
!
0.2
a1
I----'
vcL.. IcllB 1= 10
0.1
2S,J to 11S0'C
~ -1.0
rVBf{'")I@ VCf =3 oVI
0.4
i 'l/
-1.5
OVB I" VBE
I-
V
i-'
-S50t to t50C
:> -2.0
~ -2.5
0.3
O.S 0.7
1.0
2.0
3.0
S.O 7.0
10
0.2
0.1
IC. COLLECTOR CURRENT (AMP)
FIGURE 13 - COLLECTOR CUTOFF REGION
0.3
2.0 3.0
O.S 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
S.O 7.0
10
FIGURE 14 - BASE CUTOFF REGION
==
VCE-BO V
4
TJ =lS0'C
VCE
=
BO V
100'C
2S'C
FORWARD
r=:
102
-0.4.
2
2S'C
-0.3
-0.2
+11.1 +11.2 +11.3 +11.4
-0.1
VBE. BASE·EMITTER VDLTAGE (VOLTS)
10 1
-O.S
+II.S +0.6
4-301
-0.4
-0.3 -0.2 -0.1
+0.1
+0.2 +11.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
+11.4 +II.s.
•
2N6497
2N6498
2N6499
5 AMPERE
POWER TRANSISTORS
NPNSILICON
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
250, 300, 350 VOLTS
BOWATTS
· .. designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching
power supply applications .
•
•
High Collector-Emitter Sustaining
VCEO(sus) = 250 Vdc (Min) = 300 Vdc (Min) = 350 Vdc (Min) -
Voltage 2N6497
2N6498
2N6499
•
Excellent DC Current Gain hFE = 10 ~ 75@ IC = 2.5 Adc
•
Low Coliector-Emitter'Saturation Voltage
VCE(sat) = 1.0 Vdc (Max) - 2N6497
= 1.25 Vdc (Max) - 2N6498
= 1.5 Vdc (Max) - 2N6499
@
IC = 2.5 Adc-
I
*MAXIMUM RATINGS
Rating
Symbol 2N6497
COllector-Emitter Voltage
VCEO
Collector-Base Voltage
Vca
Emitter-Base Voltage
VEa
Collector Current - Continuous
- Peak
la
Total Power Dissipation@Tc= 25°C
Derate above 25°C
Po
Operating and Storage Junction
2N6499
300
350
Vdc
350
400
450
Vdc
----
-- ---
IC
Base Current
2N6498
250
6.0
Vdc
5.0
10
Adc
OIM
Adc
A
B
ao
Watts
C
_0.64
Temperature Range
W/oC
°c
Charactwistic
I
Symbol
I
Max
I
Unit
I
R8JC
I
1.56
I
°c/W
-Indicates JEDEC Registered Data.
o
F
G
H
J
K
L
THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case
STYLE 1
PIN 1
2
3.
4.
2.0
_-65'0+150 ___
TJ,Tstg
Unit
N
Q
R
S
T
U
V
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN MAX
15.11
9.65
4.06
0.64
3.61
2.41
2.79
0.36
12.70
1.14
4.83
2.54
2.04
1.14
5.97
0.76
1.14
15.75
10.29
4.B2
0.B9
3.73
2.67
3.30
0.56
14.27
1.27
5.33
3.04
2.79
1.39
6.48
1.27
INCHES
MIN MAX
0.595
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.030
0045
CASE 221A-02
TO·220AB
4-302
0.620
0.405
0.190
0.035
0147
0.105
0.130
0.022
0.562
0.050
0.210
0.120
0.110
0.055
0.255
0.050
2N6497,2N6498,2N6499
I
"ELECTRICAL CHARACTERISTICS ITC = 250 C unless olherw,se nOled.!
I
Characteristic
Symbol
Min
Typ
Max
250
300
350
-
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) .
Vde
VCEOlsus!
(lC = 25 mAde.IB = 0)
2N6497
2N6498
2N6499
Collector Cutoff Current
mAde
ICEX
IVCE = 350 Vde. VBElolf) = 1.5 Vde!
IVCE = 400 Vde. VBElolf) = 1.5 Vde)
IVCE = 450 Vde. VBEloff) = 1.5 Vdcl
2N6497
2N6498
2N6499
-
IVCE = 175 Vde. VBElolf) = 1.5 Vde. T C = 1000 C!
IVCE = 200 Vde. VBElolf) = 1.5 Vde. TC = 100o C)
IVCE = 225 Vde. VSEloff) = 1.5 Vde. TC = 100o C!
2N6497
2N6498
2N6499
-
Emitter Cutoff Current
-
-
1.0
1.0
1.0
10
10
10
1.0
IESO
•
mAde
IVSE = 6.0 Vde. IC = 0)
ON CHARACTERISTICS II)
DC Current Gain
(lC = 2.5 Ade. VCE = 10 Vde)
(lC = 5.0 Ade. VCE = 10 Vde)
Colle(;tor-Emitter Saturation Voltage
(lC = 2.5 Ade. IB = SOO mAde)
hFE
-
10
,3.0
75
-
-
-
-
-
-
1.0
1.25
1.5
5.0
-
-
-
-
1.5
2.5
Vde
VCElsal!
2N6497
2N6498
2N6499
All Devices
(lC = 5.0 Ade. IS = 2.0 Ade)
Base-Emitter Saturation Voltage
(lC = 2.5 Ade. IS = SOO mAde)
(lC = 5.0 Ade. IS = 2.0 Ade)
-\
Vde
VSElsal)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 2SO mAde. VCE = 10 Vde. I = 1.0 MHz)
IT
5.0
-
-
MHz
Output Capacitance
IVCB = 10 Vde.IE = O. I = 100 kHz)
Cob
-
-
150
pF
Rise Time
IVce = 125 Vde. Ie = 2.5 Ade. IBI = 0.5 Ade)
'r
-
0.4
0.8
In
Storage Time
IVec = 125 Vde.le = 2.5 Ade. VBE = 5.0 Vde. IBI = IB2 = 0.5 Ade)
Is
1.4
1.8
Fall Time
1Vee= 125Vde.le= 2.5Ade.IBl = IS2= 0.5 Ade)
'I
0.45
0.8
".
".
SWITCHING CHARACTERISTICS
"Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Widlh ':;300
"S. DUly Cycle ':;2.0%.
FIGURE 2 - TURN·ON TIME
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
10
VCC
+125 V
o7
VCC' mv
ICIIB' 5.0
TJ' 25°C
0.5
0.3
-,; O. 2
-3
~
....
r...... ......
/'
I,
./
./'
........
01
-' 0.0 7
0.05
I,. tf!::10ns
0.03
DUTY CYCLE' 1.0%
- 5.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
Id@ VBEI.II) • 5.0 V
0.0 2
01 MUST BE fAST RECOVERY TYPE .•g
MBD5300 USED ABOVE IB ~IOO mA
MSD6100 USED BELOW IB ~IOO mA
0.0 I
0.05 0.07 0.1
4-303
III
0.2
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT lAMP)
r--
--
2.0
3.0
5.0
2N6497,2N6498,2N6499
FIGURE 3 - THERMAL RESPONSE
~
1-'"
ffi~
;;;'"
~~
",-
I-"'
~~
1.0
O. 11=:0 =0.5
O.5
~Jlfl
'1
o.3~ =0~2
o. 2
I-- -0.1
tt~
"..
0.05
O. 1'==
~~o.o1 =
0.0
t:: ~o.o 5
-r~~~ 0.03 ~ 0.02
•
0.0 1
0.01
SINGLE
PULSE
RUC(mox) = I.S6"CIW
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ T1ME AT tl
TJ(pk)
TC = P(pk) R OJCltI
DUTY CYCLE. 0 "11/t2
rO.Ol
~SinglePuISI
I II
I
0.02 0.03
0.05
IIIII
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
t. T1ME DR PULSE WIDTH (ms)
I I II I IIIIII
20
30
SO
100
I I II IIIIII
200
300
500
1000
FIGURE 4 - ACTIVE·REGION SAFE OPERATING AREA
0
There are two limitations on the power handling ability of a
0
.0
,
dC~
.0
0
-
TC = 25°C
s,ur
_ Bonding Wire limit
5 - - - - Thermal limit (Smgle Pulse)
Sec:ond Breakdown Limit
2
CurvtSlpply below rated VCEO
1
5
0.02
5.0 1.0
~oms
transistor: average junction temperatura and second -breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater ,dissipation than the curves
ROO.,
indicate.
The data of Figure 4 i, based on TC = 2So C; TJ(pk) i,
variable depending on power level. Second breakdown pulse limits
are valid for duty cycle, to 10% provided TJ(pkl ';;ISo"C. TJ(pkl
may be calculated from the data in Figure 3. At high case temperatures. thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown
on Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
,,"
\,,\.
"
2N6491
2N6498
2N6499
~
10
20
30
SO 10 100
200 300
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
500
FIGURE 5 - TURN·OFF TIME
Vcc= 12SV
IC/IS" 5.0
TJ= 25°C
ts
.0
~
FIGURE 6 - POWER DERATING
100
0
.0
.0
~
0
0
""
~1 .0
50.1
'"" "-
............
........
.0
Thermal
o.5
o.3
o. 2
O. 1
0.05 0.01 O. 1
t,
0.2 0.3
0.5 0.1 1.0
IC. COLLECTOR CURRENT (AMP)
............
~
...........
Dlrltin~
:"-.
::::;;
l-
Second Breakdown Derlting
" "-
0
2.0
3.0
0
5.0
f"....
20
40
60
80
100
120
TC. CASE TEMPERATURE 10C)
I'
r--...
140
180
Circuit diagrams external to or containing Motorola products are Included as a means of Illustration only. Complete information
suffiCient for construction purposes may not be fully illustrated. Although the information herein has been carefully checked and is bel ieved
to be reliable. Motorola assumes no responSibility for Inaccuracies. Information herein does not convey to the purchaser any license under
the patent fights of Motorola or others.
~
The information contained herein IS for guidance only. with no warranty of any type, expressed or implied. Motorola reserves the right
to make any changes to the information and the product(s) to which the Information applies and to discontinue manufacture of the
product(s) at any time.
.
4-304
2N6497,2N6498,2N6499
FIGURE 7 - DC CURRENT GAIN
FIGURE 8 - COLLECTOR SATURATION REGION
_ 4.0
100
TJ 'ISoDC
:; 3.2
50
25 0C
z
'" J 0
~
~
_lJD~
0
2
c
~
- "\
~ 2.4
'\ '\
_r--
u
~ 16
10
........ 1--
~
0.2 0.3
05 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
20
30
001
50
002
0 05
FIGURE 9 - "ON" VOLTAGES
iii 1.0
I I I II
VBE(",) i!lICIlB' 5.0
!:;
c
-H"
~ 0.8
~
VBE@lVCPloV
0.6
-
,/
./
./
,/
0
;~.f'i" fDI'CII~ .. hFE/3
0
IIII J
'lf:-
'"
5.0
10
~
/ V
VCEhat)@lICIlB • 5.0
I-Ioe::::
o
0.05 0.07 0.1
0.1
o.J
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
2.0
3.0
-1. 0
'" -2.0
Y
~
'CIIB' 2.5
?
5.0
IIII
-3.0
0.05 0.07 0.1
-fsn'IISI C
I
V
VCE' 200 V
TplSoDC
~ 3D 0
~ 20 0
100DC
~
c:; 100
§
100
U
SO
0
0
Cib
--
TJ = 250C
~-
0
r--- r- Reverse
J.o
20
250 C
10-2
-0.4
2.0
V
FIGURE 12 - CAPACITANCE
ID J
':;10"'1
V
-
0.2 O.J
05 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
1000
700
500
;C
.3
"==
ISOCtoI5~
Bve for VB
FIGURE 11 - COLLECTOR CUTOFF REGION
101
V
- jS5DC to ~5tC
~
I-
0.2
'"
20
2SDr!D 1
·6VC for VCE(sa!l
>
~
8
10
J
0
:> 0.4
1D2
05
FIGURE 10 - TEMPERATURE COEFFICIENTS
V
TJ' 25DC
~
02
+4. 0
1.2
a
01
'B. BASE CUR RcNT (AMP)
1.4
0-
SoA
\
>
5.0
0.05 0.07 0.1
'"i5~
1\
~ 0.8
7.0
2O~\3OA\
Ie" 1.0 A
~
Tp 2SDC
1
~
:;;
I~
c
~
~'"
r--.~
I--
u-+r
;;:
II
\
\.
\
\
~>
VCE'loV-
70
Forward
-0.2
.0
+0.2
+0.4
VBE. BASE·EMITTER VOLTAGE (VOLTS)
10
0.4 0.6 1.0
+0.6
4-305
2.0
4.0 6.0 10
20
40 60
VR. REVERSE VOLTAGE (VOLTS)
100
200
400
..
2N6542
2N6543
Designers Data Sheet
•
5AMPERE
NPN SILICON
POWER TRANSISTORS
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
300 and 400 VOLTS
100 WATTS
The 2N6542 and 2N6543 transistors are designed for high-voltage,
high-speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for 115 and 220 volt line operated switch-mode applications such as:
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.
• Switching Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
Specification Features High Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
'MAXIMUM RATINGS
Rating
COllector·Emitter Voltage
Collector-Emitter Voltage
COllector-Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
- Peak (1)
VCEO(sus)
300
400
VCEX(sus)
350
450
Unit
Vdc
Vdc
VCEV
650
S50
Vdc
Svmbol
2N6542 2N6543
VEB
IC
ICM
9.0
Vdc
5.0
10
Adc
Base Current - Continuous
- Peak (1)
IS
IBM
5.0
10
Adc
Emitter Current - Continuous
- Peak (1)
IE
IEM
10
20
Adc
Total Power Dissipation @TC =·2SoC
@TC=10o"C
Derate above 25°C
Operating and Storage Junction
Po
100
57.2
0.57
Watts
TJ,Tstg
-65 to +200
PLANE
STYLE I:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
°c
DIM
THERMAL CHARACTERISTICS
Maximum Lead Temperature for Soldering
Purpo.es: liS" from Case for 5 Seconds
r.~"
SE~j
W/oC
Temperature Range
Characteristic
hermat Resistance, Junction tD Case
JF'.~~l:r
Symbol
Max
Unit
ReJC
1.75
°C/W
TL
275
°c
A
8
C
D
E
F
G
H
'1 ndicate. JEDEC Registered Data
J
K
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.
0
R
MilliMETERS
MIN
MAX
--
39.31
22.23
11.43
1.09
3.43
2UO 30.40
10.67 11.18
5.21
5.12
16.64 17.15
11.18 12.19
3.84 4.09
26.67
6.35
0.97
-
INCHES
MIN
MAX
-a-
0.250
0.038
-
1.177
0.420
0.205
0.655
0.4411
0.151
-
CASE 1t-03
TO-3
4-306
2N6542, 2N6543
"ELECTRICAL CHARACTERISTICS ITC " 25 0 C unless otherwISe noted.)
I
I
Characteristic
Symbol
Min
Max
300
400
-
-
350
450
200
300
-
Unit
OFF CHARACTERISTICS (1)
Coliector·Emitter Sustaining Voltage (Table 11
IIC" 100mA, IS" 0)
Vde
VCEOlsus)
2N6542
2N6543
COllector-Emitter Sustaining Voltage !Table 1, Figure 13)
Vde
VCEXlsus)
IIC = 2.6 A, Vel amp " Rated VCEX, TC = 100oC)
2N6542
2N6543
IIC = 5.0 Ade, Vel amp = Rated VCEO -100 V,
TC = 100oC)
2N6542
2N6543
Collector Cutoff Current
ICEV
Collector Cutoff Current
IVCE = Rated VCEV, RBE = 50
n, TC
= 100°C)
E!11itter Cutoff Current
IVES = 9.0 Vde, IC = 0)
mAde
-
IVCEV = Rated Value, VSEloffi = 1.5 Vde)
IVCEV = Rated Value, VSEloff) = 1.5 Vde, TC = 100°C
ICER
-
lEBO
0.5
3.0
3.0
mAde
-
1.0
mAde
12
7.0
60
35
-
-
1.0
5.0
2.0
-
1.4
1.4
IT
6.0
28
Cob
50
200
pF
Id
-
0.05
I"
0.7
"s
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
t = 1.0 s Inon·repetitive) IV CE = 100 Vde)
ON CHARACTERISTics (1)
DC Current Gain
-
hFE
IIc = 1.5 Ade, VCE = 2.0 Vde)
IIc= 3.0 Ade, VCE = 2.0Vde)
Collector-Emitter Saturation Voltage
IIc = 3.0 Ade, IS = 0.6 Ade)
IIC = 5.0 Ade, IB = 1.0 Ade)
IIC = 3.0 Ade, IB = 0.6 Ade, TC = 100oC)
VCElsat)
Base-Emitter Saturation Voltage
VSElsat)
Vde
Vde
II C = 3.0 Ade, IS = 0.6 Ade)
IIc=3.0Ade, Ie = 0.6 Ade. TC= 100°C
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
MHz
IIc = 200 mAde, VCE = 10 Vde, f test = 1.0 MHz)
Output Capacitance
IVCB = 10 Vde, IE = 0, f test = 1.0 MHz)
SWITCHING CHARACTERISTICS
Resistive Load ITable 11
Delay Time
IVCC = 250 Vde, IC = 3.0 A,
lSI = IS2=0.6A,tp =100"s,
Duty Cycle .. 2.0%)
Rise Time
Storage Time
tr
ts
t
Fall Time
Inductive Load, Clamped ITable I)
Storage Time
IIC - 3.0 Alpkl. Vel amp ~ Rated VCEX,
Fall Time
lSI = 0.6 A, VSEloff) = 5.0 Vde, i'C =
looD C) ~
4.0
"s
0.8
.,E'
ts
I
-
4.0
tf
~
-
0.8
I
i
"s
"s
Typical
Storage Time
Fall Time
IIC = 3.0 Alpkl. Vel amp = Rated VCEX,
I
ts
lSI = 0.6 A, VBEloff) ='5.0 Vde, TC = 25°C)
I
"'Indicates JEDEC Registered Data.
II) Pulse Test: Puis. Width = 300 "s, Duty Cycle'; 2%.
4-307
tf
1.1
I
0.12
"s
I
"s
•
2N6542, 2N6543
DC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
100
Ci)
o~
::;
0
•
\.
.....
..- ~50C
.........
-
~
-
~
\~
~
VCE - 2.0V
VCE" 10V l -
1.0
5.0
0.05 0.01 0.1
0.2
0.3
0.5
0.1
2.0
1.0
~
w
1.6
o
;
1.2
~
~
a,
0.8
'"~
......
,,;:::- ~
0
\
o
Tr 1500C
0
2.0
1'\-
~
3.0
0.3 A
1.5 A- -
\
1\
IC=0.05A
1
~_
0.4
8
~
>
"'-
5.0
2.0
5.0
10
20
1111
c:;;1.0
~
o
~
"'
~
~
o
>
>~
O. a
l.--':
VSE( .. ,)@ 'cils - 5.0
o. 6
~
~
7
iT
. r~Elo)n) @ VpE ~ 2.0 V
1/
O. 2
1.....::: r:::-
VCE( ..,)@ Ic/la = 5.0
0.05 0.07 0.1
0.2
0.3
0.5 0.1
j
1.0
2.0
~a:
i:l
,
-550Cto~
-1.6
f-ol-
fV,B FOR VBE
l-
3.0
5.0
Tr 150°C
---t"'
+25 C to +150oC I-0
i-I'
-j
I
-2.4
0.05 0.07 0.1
0.2
0,3
0.5 0.1
1.0
2.0
3.0
5.0
FIGURE 6 - CAPACITANCE
I
I
~ 30 0
z
;: 200
100 0C
o
t; 1011---= 150C
U
~
1
II
100 0
,
TJ = 25°C
Cib
10 0
~ 500
I
1/
a:
r-- r--..
c5
:!
8
100
,,; 10
0
/
':;100i==250C
....
Cob-
li=fREVfRSE
-41.4
I.t
~
IC. COLLECTOR CURRENT (AMP)
7
10 2F==h50C
10-
-I---
"'g; -o.S
i
/
I
8
II'
1/
1.0 k 2.0 k
~~Oc,o~ ~ f-
2000
10 3
500
1
FIGURE 5 - COLLECTOR CUTOFF REGION
VCE = 250 V
200
-55 0C '0 +250C'-f-
IC. COLLECTOR CURRENT (AMP)
104
"
II
II
,~JcIFloRvJE(sa!.
ffiU
$
~
~V
Ic/lS 2.0
o
'Applies!or ICIIB <;; hFE/2.0
~
'1
;;; +0.8
~
J
D.4
1.1111 I
100
F(GURE 4 - TEMPERATURE COEFFICIENTS
~p
1111
I--
50
IS. SASE CURRENT (rnA)
U +1,6
TJ = 25 0C
to
0
FIGURE 3 - "ON" VOLTAGE
1. 2
-
3.0A
o
'C. COLLECTOR CURRENT (AMP)
1.4
III"
TJ" 25 0C
-0.2
30
FORW~RO
+0.2
+0.4
20
0,5
+0.6
1.0
2.0
5,0
10
20
50
VR. REVERSE VOLTAGE (VOLTS)
VSE. SASE·EMITIER VOLTAGE (VOLTS)
4-308
100
200
500
2N6542, 2N6543
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOlsus)
..z
... 9
+10V
O,lveCircuit
+4 V
~1
ZC
o.s-L
-z0
~2
PW Vaned to Attam
Leol ' '" 80 mH Vee" 10 V
Leoil" 180 J.lH
Reoll; 005 n
Vclamp (Unclampedl
Vee'" 20V
100
u
tr
ij
~...
~,
Input
See Above For
Detailed Conditions
2
ill,.;
IN4937
_
or
_-.t_
~b,AS",b
011!
I
I
I LeOl1
3- vee
"'-11V~
~ -=:sv
Ie =3A
PW", l00~s
t,..; 5 ns
Q32N5875
Q42N5877
Diodes 1N4933
tf": 50 ns
Dutv Cycle "- 2%
VCC- 25OV
veE X Value
AL - S3
'c
t1C1r
.- - - :; ;0 '
<'
J:
t
Uncl,mped
'-\.
1--'1--
VCE
n
01 .. lN5820 Of Equlv
AS = 200
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
L J
EquIValent
V clamp
I
1
Q22N6406
tf Clamped
:;
1
Vc1amp '" Rated
INDUCTIVE TEST CIRCUIT
f!!
1
Q12N6408
f = 1 kHz
RCOII = 07 11
:'Ju-~
Va4.i2
I O.~."F
Dutv Cycle" 3%
IC=100mA
u5~
....
!: ..
u>
~~F
~
20
"
+Vin
a,
02
Set +Vjn to Obtain a Forced
hFE = 5 and Adiust PW to
Attain Specified Peak Ie.
u
.....
01
~~F
-4V
~'
20
lk
pwA
2011
::> ...
0.-
RESISTIVE
SWITCHING
VCEXlsur.) AND INDUCTIVE SWITCHING
"I--
VCE' O,
J'Clam
Time
p
~ '2 . . leoll !lepk'
"Vcc
t
J,
'-'2..l
tl Adjusted to
Obtain Ie
Leol' (leek'
12'"
Vcl amp
1
'~
RL
2
01
.=.Vcc
-5V
Test EqUIpment
Scope-Tektronlcs
475 or EqUivalent
DESIGNERS INFORMATION FOR APPLICATIONS
AND SWITCHMODE SPECIFICATIONS
occurs when the base to emitter junction is reverse
biased (VCEV), this is the . recommended and specified
use condition. Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) bath at 250 C
and lOOoC. Increasing the reverse .bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn-on and turnoff. If the load contains a significant capacitive component, high current and voltage can exist simultaneously
during turn-on and the pulsed forward bias SOA curves
(Figure 12) are the proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collecto", voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a
given high collector current and represents a voltagecurrent condition that can be sustained during reverse
biased turn-off. This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche made.
As shawn on the reverse bias SOA curve in Figure 13,
twa voltage levels are specified, one at the maximum
continuous current level and one near the recommended
operating level so that both normal and fault/transient-
INTRODUCTION
The primary considerations when selecting a power
transistor for switch-mode applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated
in Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are important in switch-mode applications.
Circuits Band C in Table 2 illustrate applications
that require high blacking voltage capability. In both
circuits the switching transistor is subjected to voltages
substantially higher than Vce after the device is completely off (see load line diagrams at IC = Ileakage '" 0
in Table 2). The blacking capability at this point depends an the base to emitter conditions and the device
junction temperature. Since the highest device capability
(1) For detailed Information on specific switching applications,
see Motorola Application Notes AN-5SB, AN-719, AN·737,
AN-752, AN-767
4-309
2N6542, 2N6543
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
10A
SERIES SWITCHING
REGULATOR
___ ,
\
~
~~
3
u
A
Vo
~
u
3Ar._"",,=,,
10A
---,,
,
tef
tl
V;~: E-------(L
6
"--::::CTi'--m-e-
3A
,
'1
I
I
I
5A
3Arl~-""'"
~
t
Ie
~I
B
Time
veE
veEO VeEX V E
Collector Voltage C V
RINGING CHOKE
INVERTER
l' ~~:l-"
--
li 5 A i - - - - - ,
~
•
Ie
Forward Bias SOA
"1/
Te = 100°C
c
TIME DIAGRAMS
Pulsed 10lls
Vce+ NIVOI
+ Leakage Spike
I.". .........
--t
Leakage Spike
e
/
Turn-On
V
-'.Vee
veEO VeEX
VeEV
I
•
1 ... __ -
"
'
I
Vee + N IVOI
PUSH.pULL
INVERTER/CONVERTER
10A
Ie
---,,
,,
c
3A,.
L,
:~.......
I
)
.......-:
toff
ton
I
5 A 1-----,
I
I
VCEV
Vec
Ie
~-
........
\
VCC
)
2Vee
10A
SOLENOID DRIVER
o
eEX
Solenoid
,,
3A
1
'I
I
5 Ai-----,
Turn-Off _
3A!-,-___
,
toff
veE
I
V~~l
I
I
• Turn·On
L - -I .. -IJ-+-+-;-t---I-*-+-IIr-+-o
veE V
4-310
r---
,ton
,.
LL___L
t
2N6542, 2N6543
cycle. Typically, forward biased secondary breakdown
(IS/b) is not a problem in switching applications because
of the relatively higher current capability in the forward
biased mode. The forward biased SOA curves provide
adequate information for these conditions.
Reverse biased secondary breakdown (ES/b) is quite
different and a more complex situation from both design
and specification standpoint. The' ES/b rating is intended
to define the amount of energy that the device can
absorb while it is in a reverse biased avalanche mode
(unclamped). The major problems in specifying ES/b are:
conditions can be taken into consideration. In the four
application examples (Table 2) load lines are shown in
relation to the pulsed forward and reverse biased SOA
curves. Note that th~ boundary along the IC = 0 axis
extends to VCEV.
'
In circuits A and D, inductive reactance is clamped by
the diodes shown. In circuits Band C the voltage is
clamped by the output reactifiers, however, the voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. A snu bber network or an additional clamp may
be required to limit the leakage spike to < VCEX(sus)
during turn·off and < V CEV after turn·off (i.e. @
IC';;; 'CEV)·
Load lines that fall within the pulsed forward biased
SOA curve during turn·on and within the reverse bias
SOA curve during turn·off are considered safe, with the
following assumptions:
(1)
(2)
(1) The device thermal limitations are not exceeded.
(2) The turn·on time or pulse width does not exceed
10 JlS (see standard pulsed forward SOA curves in
Figure 12),
(3) The base drive conditions are similar to those
specified on the data sheet (See Table 1), i.e.,
VBE(off)';;; 5 V.
Individual device capability can vary by more than
an order of magnitude within the same production
lot.
Energy handling capability is not constant within
the same device family when the test conditions
are changed.
(3)
ES/b testing is often destructive when a device
actually goes into secondary breakdown.
(4)
Some device families exhibit very limited capability
in the avalanche condition.
(5)
Depending on the device and test conditions, some
devices may not reach the avalanche condition
during the test.
For these reasons, the most reliable design approach
is to avoid this mode of operation by clamping or
snubbing the main inductive load component and minimizing leakage inductance whenever possible. The ES/b
specification does provide a boundary condition represented in Figure 7.
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy
handling capability and low saturation voltage. On this
data sheet, these parameters have been specified at 3
amperes which represents typical design conditions for
these devices. The current drive requirements are usually
dictated by the VCE(sat) specification because the maxi·
mum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.
FIGURE 7 - COLLECTOR CURRENT versus UNCLAMPED
LOAD INDUCTANCE
Ie
Ie
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tf). For this reason considerable effort is usually devoted
to reducing the fall time. The recommended way to
accomplish this is to reverse bias the base·emitter junction
during turn.·off. The reverse biased switching character·
istics for inductive loads are discussed in Figure 8 and
Table 3 and resistive loads in Figures 9 and 10. Usually
the inductive load component will be the dominant
factor in switch-mode applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switching characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, (See Table 1)
providing correlation between test procedures and actual
use conditions.
Test
h-"7'7"T7...,...,....,..,7"'7.
L Test"" 40,uH = Leffective
Operation with an unclamped inductance is safe within
the shaded area provided the base drive conditions arc
similar to or less· severe than the specified conditions
shown in Table 1, i.e., VBE(off)';;;4V, RSE'" 50nand
LL(VCEX)
Leffective = VCEX -V CC
where LL
=Circuit Leakage Reactance
TEMPERATURE REQUIREMENTS
The important parameters on this data sheet have
been specified at a case temperature of 1000 C to represent a recommended worst case design cond iti on.
SECONDARY BREAKDOWN REQUIRMENTS
Secondary breakdown capability is important in
switching applications because of the turn-on and turnoff conditions that can exist during the switching
4-311
•
2N6542, 2N6543
FIGURE 8 - TURN-OFF WAVEFORM
VCla~p .......
r- CJLLECTO~
J
CURRENT
\
..... ~~.9IC
/\
-\'i-
-
•
Ivr
I \~OLLECTOR
VOLTAGE
\
7
0.1 Vclamp ......
~
\
f-II--
\
/
--
-
"
--
i-- 0•1IC
~21C
>--
°
TABLE 3-INDUCTIVE SWITCHING
PERFORMANCE
IC
(AI
TC
DC
1.0
25
100
3.0
25
100
5.0
25
100
t5
IlS
tv
1'5
0.70 0.22
1.20 0.37
1.10 0.09
1.60 0.42
1.10 0.16
1.70 0.45
tt
tv+1(+tt
tf
1'5
0.21
0.19
0.12
0.19
IlS
IlS
0.23
0.39
0.66
0.95
0.08
0.40
0.29
1.01
0.19
0.37
0.11
0.26
0.46
1.08
Note: All Data Recorded in the Inductive Switching
Circuit Shown in Table 1.
To facilitate volume production testing, maximum
inductive switching limits for these transistors are speci·
fied using conventional measurement techniques, e.g.
ts(maxl is measured from the point where IS1 has de·
creased 10% to the point where Ie has decreased 10%,
and tf(maxl is measured between the 90% and 10% points
on the Ie waveform. In most applications, a large per·
centage of the total device power dissipation occurs
during the fall time and tf is normally used as a figure
- of merit when choosing a device for a switch·mode
application. However, there are two portions of the
turn·off waveform that can add losses and in some Clises
these losses can become a significant portion of the
total device dissipation.
Figure 8 shows an enlarged portion of the inductive
switching waveform during turn·off. The interval labeled
tv is part of the storage time interval (tsl and is defined
as voltage switching time. During this interval the tran·
sistor collector to emitter voltage changes from a satura·
tion level to a level equal to or approaching the clamp
voltage while the collector current has only changed by
10%. Typical values for this time interval at various
current· levels are shown in Table" 3 at 250 e and 1000 e
case temperature.
The time interval labeled tt occurs after the fall time
and appears as a "tail" on the trailing edge of the
collector current waveform. It is measured, for this
discussion, from the 10% point to the 2% point; and
'during this interval the collector to emitter voltage is
equal to the clamp voltage. Typical values for these time
intervals are also shown in Table 3.
Since power dissipation occurs during the total time
period tv + tf + tt and each interval can be affected by
external conditions, some applications may require a
specific analysis in order to accurately predict total
device ~issipation.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 10 - TURN-OFF TIME
FIGURE 9 - TURN·ON TIME
2.0 k
1.0 k
'" ~
700
50
°
;::
.;
100
70
50
30
20
0.01
IdIilVBE 01f)"5.0V
!2.0 k~
w
r7
'" r-....
r-...
~
1.0 k
.; 700
500
I"'-0.05
--
0.1
0.2
~
0.5
1.0
2.0
5.0
100
0.01
IC, COLLECTOR CURRENT (AMPI
0.02
0.05
0.1
0.2
Itl: ~~~C
r--,.
I-'"
0.5
1.0
IC, COLLECTOR CURRENT (mAl
4-312
VCC =250 V
IC/IB =5.0
.......
.....
300
200
........
0.02
Is
3.0 k
~
~ 200
7.0 k
5.0 k
=1=
"
!300
10 k
VCC"250V _
Ic/lB =5.0
TJ"250C
2.0
5.0
10
2N6542, 2N6543
FIGURE 11 - THERMAL RESPONSE
1.0
O. 7 f::O" 0.5
Z
--
30 I----
~
•
I
20
w
r-l
'"~
"ffi
1\
I
5OC
I--
W
u
"
~
"2:
r-TJ-150:;'"
\
[\.
-~ J...-f-"
1\ r--;"
5.0
0.1
>
~
0.5 0.7
1.0
2.0
5.0 7.0
3.0
10
0
\
1\
1\
0.005
0.01
0.02
1.4
-TJ=250C
if
-
"2.w O. 8 -
VBEI..tl @Icll~= 5.0
'"<
!:i
...- .-
t--t-
D. 6-VBE{on)@
I
0.2
ICIIB = 5.0
..;4'2.0
r:r'
1.0
0.5
1.0
2.0
-550C to 250C
3.0
-1.0
-1.5
i
5.0 7.0
10
--- -
25 0 C to 1500 C
~
>-
I
-0.5
I- 8VB for VBE
-2.0
2.5
0.1
0.2
0.3
IC. COLLECTOR CURRENT (AMP)
! 1,03
>z
r--:-
">-~
/
I
1000
700
~ 50 0
10-r
-0.4
-0.2
t-
5 20O
I
~
/
to.4
..... Cob
100
.; 70
0
VCP 250 Vdcto.2
10
Cib
~ 300
u
FORllfARO
II
5.0 7.0
TJ = 25°C
II
t-
<
I - - t---250C
I
3.0
w
/
./
REVERSE
~100
2.0
2000
10 11== f-=750C
:3
1.0
l
C to
1°
,51i.
FfGURE 6- CAPACITANCE
,,
", ,
,,
TJ = 150°C
~ 102 1== F=1250C
13
=
100°C
0.5 0.7
-'
l.-1'
IC. COLLECTOR CURRENT (AMP)
FIGURE 5 - COLLECTOR CUTOFF REGION
104
5.0
2toCtO:l~~
"8VC for VCElsatl
f5
~
I
0.5 0.7
0.3
1.5
w
,....
2.0
I
I
"Applies for IcIIB"; hFEI3
ffi
g;
I
1.0
2.0
:3
TT
0.1
2.5
ffi
i3
VCE~ 3.h.
o. 2-JCE{~t)
0
ell
./' . /
1·1
">>- O. 4
!
V
V
I I
I I
-
FIGURE 4- TEMPERATURE COEFFICIENTS
1. 2
~ 1. 0
r-- r-
~
0.05
0.1
0.2
0.5
lB. BASE CURRENT (AMP)
IC. COLLECTOR CURRENT lAMP)
FIGURE 3 - "ON" VOLTAGE
5.0A
\2-5
0, 8
~ o. 4
"u
0.3
\
1.0 A
IC=0.25A
"t;
7.0
0.2
\
1. 2
I:
a:~
10
TJ= 25°C
1.6
0
20
0.5
to.6
'"
1.0
2.0
5.0
10
20
50
YR. REVERSE VOLTAGE (VOLTS)
VBE. BASE EMITTER VOLTAGE (VOLTS)
4-316
100
200
500
2N6544, 2N6545
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
vceOllusl
.
z
~E
zO
-15
u
RESISTIVE
SWITCHING
VCEXlsusl AND INDUCTIVE SWITCHING
D,ive Circuit
+4V
PW-db-
oJ"L
·--r
-4V
Set +Vin to Obtain 8 Forced
hFE '" 5 and Adjust PW to
Attain Specified Peak Ie.
PW Varied to Attam
'C"'100mA
Duty Cycle or;: 3"
f -1
L Col l=80mH VCC=10V
Rcoil" 0.7 n
kH~
'-If-~J\N
Leoll" 180 ""
.
__+O -5 V
Ie· SA
pw.., 1001'S
tre;; 5ns
t,< 50nl
Duty Cycle" 2%
012N6408 Q3 2N5875
022N6406 042N5871
Diodes 1N4933
Reoil .. 0.05 n
Vee" 250 V
Vclamp - Rated VCEX Value
RL -50 n
01 = 1N5820orEquIY.
Vee" lOV
Vclamp (Unclampedl
Rs" 12 n
INDUCTIVE TESTCIRCUlT
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
t,C1amped
11 Adjusted to
Obtain Ie
'C
'~.TUT
"L
2
1
~
01
..:=.,.Vee
J,
..sV -=-
Vee
Telt EqUipment
Scope - Tektronix
475 or EquIValent
DESIGNERS INFORMATION FOR APPLICATIONS
" AND SWITCHMODE SPECIFICATIONS
occurs when the base to emitter junction is reverse
biased tv CEV), this is the recommended and specified
use condition. Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) both at 250 C
and lOOoC. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn-on and turn·
off. If the load contains a significant capacitive com·
ponent, high current and voltage can exist simultaneously
during turn·on and the pulsed forward bias SOA curves
(Figure 12) are the proper design limits.
"
For inductive loads, high voltage and current must be
sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by'several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a
given high collector current and represents a voltagecurrent condition that can be sustained during reverse
biased turn-off. This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode .•
As shown On the reverse bias SOA curve in Figure 13,
two voltage levels are specified, one at the maximum
continuous current level and one near the recommended
operating level so that both normal and fault/transient
INTRODUCTION
The primary considerations when selecti ng a power
transistor for switch-mode applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, "these specifications will be
discussed and related to the circuit examples illustrated
in Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are im·
portant in switch-mode applications.
Circuits Band C in Table 2 illustrate applications
that require high blocking voltage capability. In both
circuits the switching transistor is subjected to voltages
substantially higher than VCC after the device is completely off (see load line diagrams at IC = Ileakage "" 0
in Table 2). The blocking capability at this point de·
pends on the base to emitter conditions and the device
junction temperature. Since the highest device capability
(1) For detailed Information on JPaclfic switching applications.
tea Motorola Application Noles AN-SSa, AN-719. AN-737.
AN-752. AN-767 and Enginaar)ng Bullatln EB-39.
4-317
•
2N6544, 2N6545
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIR.CUIT
LOAD LINE DIAGRAMS
16A
SERIES SWITCHING
REGULATOR
---,
,
Te = 1000 e
c
TIME DIAGRAMS
Pulsed 10 IJS
Forward Bias SOA
'c
SA
l ~1::"k'Oif
")/
~
~
A
Vo
VCC
u
68Ai-----,
~ 5A
•
--
u
....-
,
~
\
. VeEO VeEX
VeEV
'e
Collector Voltage
16A
RINGING CHOKE
INVERTER
---,,
,
l. ,//
SA
,
'1
I
I
le 8A / - - - - ,
:-·"-'-°"--"'-----1
Vee + NIVOI
+ Leakage Spike
I
veEO VeEX
V
Leakage SpIke
V~~: eGE-------fl-.,Vee
VeEV
16A
I
-----,.
\
.,
I
I
I
I
,----- -----
Vee+ N IVOI
PUSH.pULL
INVERTER/CONVERTER
'off
/
I
B
I
Time
,Turn.On
•
- ....
t;
,,
)
c
I
veE
I
Ie 8A
~
veeQ
I
VCEV
2VCC
o
I
--~
VCC
Solenoid
Ie 8 A 1 - - - - - ,
Turn-Off
SAI!---I_ _
,,
,
SIA
: ----
L.
(----
,
I ton
....
veE
I
I
I
I.
A Turn-On
' - - - I ...
I
'e
16A
SOLENOID DRIVER
• Vee
-,.I+--+--,.t--l-+_'.--tVCEV
~318
toff
'''~--~.
2N6544,2N6545
cycle. Typically, forward biased secondary breakdown
(IS/b) is not a problem in switching applications because
of the relatively higher current capability in the forward
biased mode. The forward biased SOA curves provide
adequate information for these conditions.
Reverse biased secondary breakdown (ES/b) is quite
different and a more complex situation from both design
and specification standpoint. The ES/b rating is intended
to define the amount of energy that the device can
absorb while it is in a reverse biased avalanche mode
(unclamped). The major problems in specifying ES/b are:
conditions can be taken into consideration. In the four
application examples (Table 2) load lines are shown in
relation to the pulsed forward and reverse biased SOA
curves. Note that the boundary dlong the IC = 0 axis
extends to VCEV.
In circuits A and D, inductive reactance is clamped by
the diodes shown. In circuits Band C the voltage is
clamped by the output reactifiers, however, the v.oltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. A snubber network or an additional clamp may
be required to limit the leakage spike to < VCEX(5US)
during turn·off and < VCEV after turn·off (i.e. @
IC';;; ICEV)·
Load lines that fall within the pulsed forward biased
(1)
(2)
SOA curve during turn-on and within the reverse bias
SOA curve during turn·off arc considered safe, with the
following assumptions:
(1) The device thermal limitations are not exceeded.
(2) The turn-on time or pulse width does not exceed
10 f,ls (see standard pulsed forward SOA curves in
Figure 12).
(3). The base driv'e conditions are similar to those
specified on the data sheet (See Table 11. i.e.,
VBE(off)';;; 5V.
SECONDARY BREAKDOWN REQUIRMENTS
Secondary breakdown capability is important in
switching applications because of the turn-on and turnoff conditions that can exist during the switching
(3)
ES/b testing is often destructive when a device
actually_goes into second~ry breakdown.
(4)
Some device families exhibit very limited capability
in the avalanche condition_
(5)
Depending on the device and test conditions, some
devices may not reach the avalanche condition
during the test.
For these reasons, the most reliable design approach
is to avoid this mode of operation by clamping or
snubbing the main inductive load component and minimizing leakage inductance whenever possible. The ES/b
specification does provide a boundary condition represented in Figure 7.
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy
handling capability and low saturation voltage. On this
data sheet, these parameters have been specified at 5
amperes which represents typical design conditions for
these devices. The current drive requirements are usually
dictated by the VCE(sat) specification because the maximum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tf). For this reason considerable effort is usually devoted
to reducing the fall time. The recommended way to
accomplish this is to reversa bias the base-emitter junction
during turn-off_ The reverse biased switching characteristics for inductive loads are discussed in Figure 8 and
Table 3 and resistive loads in Figures 9 and 10. Usually
the inductive load component will be the dominant
factor in switch-mode applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switching characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, (See Table 1)
providing correlation between test procedures and actual
use conditions.
Individual device capability can vary by more than
an order of magnitude within the same production
lot.
Energy handling capability is not constant within
the same device family when the test conditions
are changed.
FIGURE 7 - COLLECTOR CURRENT versus UNCLAMPEO
LOAO INDUCTANCE
'C
L Test ". 40 jJH = Leffectlve
Operation with an unclamped inductance is safe within
the shaded area provided the base drive conditions are
similar to or less severe than the specified conditions
shown in Table 1, i.e., VeE (off) .;;; 4 V, ReE" son and
LL(VCEX)
Leffective = VCEX-VCC
where LL = Circuit Leakage Reactance
TEMPERATURE REQUIREMENTS
The important parameters on th is data sheet have
been specified at a case temperature of 1000 C to represent a recommended worst case design condition ..
4-319
•
2N6544, 2N6545
To facilitate volume production testing, maximum
inductive switching limits for these transistors are speci·
fied using conventional measurement techniques, e.g.
ts(max) is measured from the point where IB1 has de·
creased 10% to the point where Ie has decreased 10%,
and tfl max) is measured between the 90% and 10% points
on the Ie waveform. In most applications, a large per·
centage of the total device power dissipation occurs
during the fall time and tf is normally used as a figure
of merit when choosing a device for a switch· mode
application. However, there are two portions of the
turn·off waveform that can add losses and in some cases
these losses can become a significant portion of the
total device dissipation.
Figure 8 shows an enlarged portion of the inductive
switching waveform during turn·off. The interval labeled
tv is part of the storage time interval (t s ) and is defined
as voltage switching time. During this interval the tran·
sistor collector to emitter voltage changes from a satura·
tion level to a level equal to or approaching the clamp
voltage while the collector current has only changed by
10%. Typical values for this time interval at various
current levels are shown in Table 3 at 2So e and lOOoecase temperature.
The time interval labeled tt occurs after the fall time
and appears as a "tail" on the trail ing edge of the
collector current waveform. It is measured, for this
discussion, from the 10% point to the 2% point; and
during this interval the collector to emitter voltage is
equal to the clamp voltage. Typical values for these time
intervals are also shown in Table 3.
Since power dissipation occurs during the total time
period tv + tf + tt and each interval can be affected by
external conditions, some applications may require a
specific analysis in order to accurately predict total
device dissipation.
FIGURE 8 - TURN-OFF WAVEFORM
r-
J
cJCURRENT
LLECTO ~
VCI'~P\
\
-... r~·9IC
•
/\
-\.,- -"--
f-
Ivf-
\
0.1 Vcl,mp
\
/
•. \-,COLLECTOR
VOLTAGE
V
r-...
0
"
--
t-
... O.IIC
~21C
r-0
TABLE 3-INOUCTIVE SWITCHING PERFORMANCE
IC
TC
"c
,ts..
tv
Amps
jIJ
jIJ
jIJ
jIJ
3.0
25
100
0.94
1.40
0.09
0.30
0.14
0.44
0.10
0.06
0.33
0.80
5.0
25
100
1.20
1.90
0.45
1.00
25
100
1.60
1.80
0.18
0.45
0.12
0.17
0.10
0.05
8.0
0.17
0.50
0.27
0.57
0:09
0.30
0.48
1.04
If
tt
tv+lf+tt
Note: All Data Recorded'in the Inductive Switching
Circuit Shown in Table 1:
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN·ON TIME
2.0 k
1.0 k
700
500
"'"' ~
VCC = 250V _
IC/ls = 5.0
TJ= 250 C.
==
"
~ 200
0
20
0.01
Id@lVSEoff)=5.0V
1/
r-.....
"' I'...
"'~ 1.0 k
........
~If
I\..
.; 700
500
..........
0.05 0.1
0.2
0.5
1.0
IC, COLLECTOR CURRENT lAMP)
r.,..-
......
300
0.02
1'1: ~~~c.
-.;;;;:
!2.0 k '
~
;::
100
0
0
VCC=250V
Iclla =5.0
"
.
3.0 k
]300
.;
FIGURE 10 - TURN·OFF TIME
10 k
7.0 k
5.0 k
""'"
200
I"--r-.
2.0
5.0
100
0.01 . 0.02
0.05
0.1
0.2
0.5
1.0
IC, COLLECT.OR CURRENt (mA)
4-320
2.0
5.0
10
2N6544, 2N6545
FIGURE 11 - THERMAL RESPONSE
10
0.7
0.5
=1=
ROJcl., ~ rl., ROJC
ROJC - 1.4 0CIW Max - t . D CURVES APPL Y FOR PDWERIPULSE TRAIN SHOWN
READ TIME AT 11
llTJlpkl-TC' ~Ipkl ROJCltI
t=
~
0.3
+-
~
0.2
t:;;
D ~ 0.5
o. I
;"""l
0.0 7
0.05
-'"
0.03
0.02
0.0 1
0.02 0.03
01
0.05
--fill
== t:::
~
l
-
D.2
0.1
0.05
0.02
001
SINGLE PULSE
.~
02
0.3
P kl
r--
~'~j
I-
=
~
DUTY CYCLE. D ~ 11/'2 -
I-
I I I IIIIIII
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200
300
500
1000
2000
t. TIME Imsl
FIGURE 13 - REVERSE BIAS SAFE
OPERATING AREA
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
20
10
0: 5.0
1O.,-t'OO .,
,.
~
...
1.0
0.5
e
a:
1
0.2
0.1
I'S
de t-
2.0
ffi
a'"'"
10
1.0ms
0.5~1=;
~ 8.0
~
...
5.0ms
ffi
~
~I-
:::j 0.05:::::
c
-_
"'.0.02 _.
:: 0.01
a
Tc ~ 25 0 C
- BONDING WIRE LIMIT
THERMAL LIMIT
ISING LE PU LSEI
SECOND BREAKDOWN LIMIT
6.0
I
hRN tiFF LDlD L1rJ
BOUNOARY FOR 2N6545.
FOR 2N6544. VCEO AND
100 VOLTS, LESS.
VCEX~E
'"
~ 4.0
0.005 C'URVES APPLY BELOW RATED VCEO "H
0.002
5.0 7.0 10
20
30
50 70 100
1
8 I- VBE(oll) .;; 5.0 V
E 2.0 TC';; 1000C
2N6544
2N6545
200
300
500
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
VCEX(sus)
4.5A
c
o
o
VCEO(sus)
VCEXlsu,)
1
100
200
300
400
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
500
FIGURE 14 - POWER DERATING
100
~
~
0
I--
THERMAL
DERATING
0
--
~
r-.,.
SECDND BR~AKDO~N_
t-DERATING
r----..
r--.....
t"-.
I',
'r-.,.
0
......
0
o
o
40
00
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown'
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve on
Figure 14.
TJ(pk) may tre calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown. Use of reverse
biased safe operating area data (Figure 13) is discussed in
the designe~'s appl ication section.
UO
--
f'....
'" "r-..I"
100
200
TC. CASE TEMPERATURE 10C)
4-321
2N6546
2N6547
Designers Data Sheet
•
15 AMPERE
NPN SILICON
POWER TRANSISTORS
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
300 and 400 VOLTS
175 WATTS
The 2N6546 and 2N6547 transistors are designed for high·voltage,
high·speed, power switching in inductive circuits where fali time is
critical. They are particularly suited for 115 and 220 volt line op·
erated switch·mode applications such as:
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per·
mits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facil itate "worst case"
design.
• Switching Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
Specification Features Hi~h Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
~
:
"MAXIMUM RATINGS
Symbol
2N6546
2N6547
COllector-Emitter Voltage
VCeO(susl
300
400
Unit
Vdc
Collector-Emitter Voltage
VCEX(susl
350
450
Vdc
Vcev
650
850
Rating
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak (1)
Base Current - Continuous
-Peak (11
Vdc
-F-
VeB
9.0
Vdc
r--J-
IC
ICM
15
30
10
20
Adc
l0l'x/ ~
IB
IBM
Adc
Ie
IEM
25
50
Adc
Total Power Dissipation @TC = 250 C
@TC= 100°C
Po
175
100
1.0
-65 to +200
Watts
T J,T stg
1
DIM
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 118" from Case for 5 Seconds
Symbol
Max
Unit
A8JC
1.0
°C/W
TL
275
°c
·'ndicates JEDEC Registered Data
•
B
C
D
E
F
G
H
J
K
0
R
=5 ms, Duty Cycle .. 10%.
'oW
~./
MILLIMETERS
MIN
MAX
-
6.35
0.97
-
29.90
10.67
5.21
16.64
11.18
3.84
-
39.37
22.23
11.43
1.09
3.43
30.40
11.18
5.72
17.15
12.19
4.119
26.67
INCHES
MIN MAX
-
0.250
0.038
-
1.177
0.420
0.2115
0.655
0.440
0.151
-
CASE 11·03
TO·3
4-322
G
STYLE 1:
PIN t. BASE
2.EMIITER
CASE, COLLECTOR
°c
THERMAL CHARACTERISTICS
1
t~~vQ
•
\
WloC
Temperature Range
(11 Pulse Test: Pulse Width
I
H
Emitter Current - Continuous
- Peak (1)
Derate above 2SoC
Operating and Storage Junction
JF"~'
[;\4;,]=,
t.550
0.875
0.450
0.043
0.135
1.197
0.440
0.225
0.675
0.480
0.161
1.050
I
R
2N6546, 2N6547
'ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwISe noted.!
I
Characteristic
Max
SymbOl
Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1)
VOC
VCEO(sus)
300
400
-
2N6546
2N6547
350
450
2N6546
2N6547
200
300
-
-
1.0
4,0
2N6546
2N6547
(lC=100mA,IB=0)
Collector-Emitter Sustaining Voltage ITable 1. Figure 13)
~(lC = 8.0 A, Vcl amp = Rated VCEX, TC = 100°C)
lic = 15 A, Vcl amp = Rated VCEO -100 V,
TC = 100°C)
Vdc
VCEXlsus)
Collector Cutoff Current
rfi»;lfc
CEV
IVCEV = Rated Value, VBE(oll) = 1.5 Vdc)
(VCEV = Rated Value, VBE(olf) = 1.5 Vdc, TC = 100°C)
Collector Cutoff Current
(VCE. = Rated VCEV, RBE = 50
5.0
mAOC
-
1.0
mAde
12
6.0
60
30
-
1.5
5.0
2.5
ICER
n, TC = 100°C)
Emitter Cutoff Current
lEBO
(VEB = 9.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
t = 1.0 s (non-repetitive) (VCE = 100 Vde)
ON CHARACTERISTICS (1)
DC Current Gain
lic
(lc
Collector-Emitter Saturation Voltage
lic = 10 Adc, IB = 2.0 Adc)
(lc = 15 Adc, IB = 3.0 Ade)
lic = 10 Adc, IB = 2.0 Ade, Tc = 100°C)
VCE(satl
Base-Emitter Saturation Voltage
VBE(sat)
lic
lic
= 10 Adc,
=
IB
10 Adc, IB
-
hFE
=5.0 Adc, VCE = 2.0 Vdc)
=10 Adc, VCE = 2.0 Vdc)
VOc
-
Vde
-
= 2.0 Ade)
= 2.0 Adc, TC = l000C
-
1.6
1.6
IT
6.0
~8
I,;ob
125
500
P
-
0.05
I'S
-
1.0
I'S
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 500 mAde, VCE = 10 Vde, ' test = 1.0 MHz)
uutput I,;apac'tanee
IVCB = 10 Vde, IE = 0, I test = 1.0 MHz)
MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table
Delay Time
1)
= 250 V, IC = 10 A,
Id
IBI = 182 = 2.0 A, tp= 1001's,
Duty Cycle .. 2.0%)
ts
4.U
I'S
tf
0,7
I'S
(VCC
Rise Time
Storage Time
tr
Fall Time
Inductive Load, Clamped nable 11
Storage Time
Fall Time
I
Storage Time
Fall Time
I
(lC = 10 A(pk), Vcl amp = Rated VCEX, IBI =2.0 A.
VBE(off) = 5.0 Vde, TC - l00 0 C)
I
ts
I
I
tf
I
-
-
I
1
5.0
1.5
I'S
1
I'S
Typical
(lC = 10 A(pk), Vel amp = Rated VCEX, IBI =2.0 A,
VBEloff) = 5.0 Vdc, TC = 25°C)
2.0
ts
I
"Indicate. JEDEC Registered Data.
11) Puse Test: Pulse Width = 300 I'S, Duty Cycle = 2%.
4-323
tf
1
0.09
I'S
I
I'S
2N6546, 2N6547
DC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE', - DC CURRENT GAIN
~ 2.0
100
50
z
""j-...
:;;:
2~OC
I
to
•
~
8
30
20
c
w
~
t-....
"-'-
I
u
I"
'"~
r-..I'\
~
~
~
U:'
~
7.0
5.0
0.2
0.3
0.5
'I IIII
1.0
IC: 2.0A
1. 2
.tl
5.0
7.0
>
20
en
1.0
'l
I
I
I
-
.!VBEI"II@ IclIs: 5.0
w
==
VSElon)@VCE:2.0V
2: 0.8
to
'" 0.6
!:i
c
>
>~
0.4
0.2 -
!
.h
c
:;
.
~
-TJ:2S0 C
I
I
I
I I 11111
I
I '-1111_1
-
~w
i-"'"
100-
0
0.07 0.1
0.2
0.3
U
0.3
0.5
1.0
2.0
1.5
lJ-
-0.5
~
5.0 7.0
10
-1.5
103
'"
a
1== r=: TJ :ISO'C
102
12S'C
1000C
10 I
0.5 0.7
3000
fi"REVERSE
25'C
~
-0.2
10
20
/
0
0
I
./
/
1/
t---....
0
10-1
-0.4
5.0 7.0
Cib
I
1:=
3.0
TJ: 2S'C-
1"--
2000
75'C
10 0li==
2.0
1.0
FIGURE 6 - CAPACITANCE
c
~
I I II
II
0.3
IC. COLLECTOR CURRENT lAMP)
I
/
!
.~
-550C to 2SOC
-I--
5000
f== VCE: 250 V
'"
V
evs l.rVOE
-
-2.5
0.2
20
/
2SJCto~
'"
;;
7
[7
-55'C ,. 2S'C
FIGURE 5 - COLLECTOR CUTOFF REGION
~
5.0 7.0
2t C,' 't0oc
'evc '.rVCEI",)
IC. COLLE~TOR CURRENT lAMP)
104
3.0
ITT}
II
1.0
i-2.a
3.0
-
II r
111
.1 .1 I 1.1 III
- 'iPP"j' 'I' InB.; hFEI3
~ -1.0
~
I
0.2
2.0
w
'"
i=
.-!-
o
2.0
1.0
8
./
VCEI"I)@ ICIIS: 5
0.5 0.7
FIGURE 4 - TEMPERATURE COEFFICIENTS
2.5
$ 0.5
-I-
I
I-
IS. BASE CURRENTIAMP)
FIGURE 3 - "ON" VOL TAGE
1.2
I
- I~A ~
I\,
IC. COLLECTOR CURRENT lAMP)
1.4
II
\
\
_ O. 4
10
IDA-
5.0A-
g
.......
3.0
I--
D.8
c
VCP 2.0 V
I VC1E - 10iV
2.0
'"
1\"
1-
0
1.6
~
-SSoC
.ll"
I
'jJ:25'C
c
2:
TJ-ISOOC
70
fORWARD
+0.2
+0.4
100
70
50
0.5
+D.6
1.0
2.0
5.0
10
r--.t-20
Cob
50
100
VR. REVERSE VOLTAGE (VOLTS)
VSE. SASE.£MITTERVDLTAGE (VOLTS)
4--324
200
500
2N6546, 2N6547
TABLE 1 - TEST CONDITIONS FOR DVNAMIC PERFORMANCE
VCEOlsus)
RESISTIVE
SWITCHING
VCEXI'Sud AND INDUCTIVE SWITCHING
+V,t'i
Drive Circuit
>4V
"'Z
.. 0
~E
,,0
-z
8
~t
+Vin to ObtaIn a Forced
hFE '" 5 and Adjust PW to
Attain Specified Peak Ie.
PW VarIed to Analn
Ie" 100mA
5u....~
~~
01 2N6408
022N6400
t" 1 kHz
PW"" 1001&1
032N5875
04 2N5877
Sns
If" 50 nl
Duty Cycle';; 2%
tl"';;
Diodes 1N49l3
so ,LIH
LeOrl - 80 mH V'Cc" 10 V
Lc:oil '" 1
Rcoll ' 07 H
Vctamp !Unc1ampedl
Reoll '" 0.05 u
INDUCTIVE TEST CIRCUIT
~
DutY Cycle ... 3%
IC·10 A
~1r~~~--~-5V
Vec- 25DV
Vclamp '" Rated VCEX Value
RL" 26n
01"" 1N5820 or Equlv.
RO .. en
Vee =20V
OUTPUT WAVEFORMS
t,
Clamped
RESISTIVE TEST CIRCUIT
1, Adjusted to
Obtain Ie
5
'~eTUT
RL
1-
2
u
a:
U
E
..
~1
-=- Vee
-5V
-=
TeS1 Equlpmlfnt
Scopo - Tolctroni.ll'
4750' Equ,val"nl
DESIGNERS INFORMATION FOR APPLICATIONS
AND SWITCHMODE SPECIFICATIONS
occurs when the base to emitter junction is reverse
INTRODUCTION
biased (VeEV). this is the recommended and specified
use condition. Maximum ICEV at rated VeEV is specified
The primary considerations when selecting a power
at a relatively low reverse bias (1.5 Volts) both at 250 e
transistor for switch-mode applications are voltage and
and lOOoe. Increasing the reverse bias will give some
current ratings, switching speed, and energy handling
improvement in device blocking capability.
capability. In this section, these specifications will be
The sustaining or active region voltage requirements
discussed and related to the circuit examples illustrated
in switching applications occur during turn-on and turnin Table 2.(1)
off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously
during turn-on and the pulsed forward bias ·SOA curves
VOLTAGE REOUIREMENTS
(Figure '12) are the proper design limits.
For inductive loads, high voltage and current must be
Both blocking voltage and sustaining voltage are imsustained simultaneously during turn-off, in most cases,
portant in switch-mode applications.
with the base to emitter junction rev~rse biased. Under
Circuits Band C in Table 2 illustrate applications
these conditions the collector voltage must be held to a
that require high blocking voltage capability. In both
safe level at or below a specific value of collector current.
circuits the switching transistor is subjected to voltages
This can be accomplished by several means such as active
substantially higher than Vce after the device is comclamping, RC snubbing, load line shaping, etc. The safe
pletely off (see load line diagrams at Ie = Ileakage "" 0
level for these devices is specified as VCEX(sus) at a
in Table 2). The blocking capability at this point de·
given high collector current and represents a voltagepends on the base to emitter conditions and the device
current condition ·that can be sustained during reverse
junction temperature. Since the highest device capability
biased turn-off. This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
As shown on the reverse bias SOA curve in Figure 13,
two voltage levels are specified, one at the maximum
111 Far detailed information on .peclflc switching appllcetions,
continuous current level and one near the recommended
lee Motorola Application Note. AN-5SB, AN-719, AN-737,
operating level so that both normal and fault/transient
AN-752, AN-767
4-325
•
2N6546, 2N6547
CIRCUITS
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING
.
CIRCUIT
LOAD LINE DIAGRAMS
SER IES SWITCHING
REGULATOR
-
-
-
,
o
Te=lOO e
" 1/
,
I
A
II
TIME DIAGRAMS
Pulsed 10 lotS
Forward Bias SOA
Reverse Bias SOA
:/
RINGING CHOKE
INVERTER
Ie
-- --.,
lOA
"
Vee
lh
'1
~/
I
I
B
toff.
r~~~
I
__ ,
leakage Spike
/
Vee + N (Vo)
Ie
30 A
ve~Evee
c
Q
I
Vee
•
<
I
~
30A
- ---..,
,,
....
I
D
lelSA
----
Ie
10 A
II
veEV
,.
.
,
I
!<.ot
2N6546,2N6547
cycle. Typically. forward biased secondary breakdown
(IS/b) is not a problem in switching applications because
o! the relatively higher current capability in the forward
biased mode. The forward biased SOA curves provide
adequate information for these conditiom.
Reverse biased secondary breakdown (ES/b) is quite
different and a more complex situation from both design
and specification standpoint. The ES/b rating is intended
to define the amount of energy that the device can
absorb while it is in a reverse biased avalanche mode
(unclamped). The major problems in specifying ES/b are:
conditions can be taken into consideration. In the four
application examples (Table 2) load lines are shown in
relation to the pulsed forward and reverse biased SOA
curves. Note that the boundary along the IC = 0 axis
extends to VCEV.
In circuits A and D. inductive reactance is clamped by
the diodes shown. In circuits Sand C the voltage is
clamped by the output reactifiers. however. the voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. A snubber network or an additional clamp may
be required to limit the leakage spike to < VCEX(sus)
during turn·off and < VCEV. after turn·off (Le. @
IC~ ICEV).
Load lines that fall within the pulsed forward biased
SOA curve during turn·on and within the reverse bias
SOA curve during turn·off are considered safe. with the
following assumptions:
(1)
(2)
(1) The device thermal limitations are not exceeded.
(2) The turn·on time or pulse width does not exceed
lOlls (see standard pulsed forward SOA curves in
Figure 12).
(3) The base drive conditions are similar to those
specified on the data sheet (See Table 11. i.e .•
VBE(off) ~ 5 V.
Individual device capability can vary by more than
an order of magnitude within the same production
lot.
Energy handling capability is not constant within
the same device family when the test conditions
are changed.
(3)
ES/b testing is often destructive when a device
actually goes into secondary breakdown.
(4)
Some device families exhibit very limited capability
in the avalanche condition.
(5)
Depending on the device and test conditions. some
devices may not reach the avalanche condition
during ~he test.
For these reasons. the most reliable design approach
is to avoid this mode of operation by clamping or
snubbing the main inductive load component and mini·
mizing leakage inductance whenever possible. The ES/b
specification does provide a boundary condition repre·
sented in Figure 7.
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time. high energy
handling capability and low saturation voltage. On this
data sheet. these parameters have been specified at 10
amperes which represents typical design conditions for
these devices. The current drive requirements are usually
dictated by the VCE (sat) specification because the maxi·
mum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.
FIGURE 7 - COLLECTOR CURRENT versus UNCLAMPED
LOAD INDUCTANCE
Ie
ES/b': 2.0 mJ
'eT est 1n77"7:T777"r.rlil
SWITCHING REQUIREMENTS
In many switching applications. a major portion of the
transistor power dissipation occurs during the fall time
(tt). For this reason considerable effort is usually devoted
to reducing the fall time. The recommended way to
accomplish this is to reverse bias the base·emitter junction
during turn·off. The reverse biased switching character·
istics tor inductive loads are discussed in Figure 8 and
Table 3 and resistive loads in Figures 9 and 10. Usually
the inductive load component will be the dominant
factor in swit~h·mode applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switch·
ing characteristics are derived from the same circuit used
to specify the reverse biased SOA curves. (See Table 1)
providing correlation between test procedures and actual
use conditions.
L Test'" 40 #H
-=
Leftectlve (
Operation with an undamped inductance is safe within
the shaded area provided the base drive conditions are
similar to or less severe than the specified conditions
shown in Table 1. Le .. VSE(off)" 4 V. RSE;;' 50.lt and
LL(VCEX)
Lefteclive = VCEX-VCC
where LL = Circuit Leakage Reactance
TEMPERATURE REQUIREMENTS
The important parameters on this data sheet have
been specified at a case temperature of 1000C to repre·
sent a recommended worst case design condition.
SECONDARY BREAKDOWN REQUIRMENTS
Secondary breakdown capability is important in
switching applications because of the turn·on and turn·
off conditions that can exist during the switching
4-327
II
2N6546, 2N6547
To facilitate volume production testing. maximum
inductive switching limits for these transistors are speci·
fied using conventional measurement techniques. e.g.
tslmax) is measured from the point where IBl has de·
creased 10% to the point where Ie has decreased 10%.
and tflmax) is measured between the 90% and 10% points
on the Ie waveform. In most applications. a large per·
centage of the total device power dissipation occurs
. during the fall time and tf is normally used as a figure
of merit when choosing a device for a switch·mode
application. However. there are two portions of the
turn·off waveform that can add losses and in some cases
these losses can become a significant portion of the
total device dissipation.
Figure 8 shows an enlarged portion of the inductive
switching waveform during turn·off. The interval labeled
tv is part of the storage time interval Itsl and is defined
as voltage switching time. During this interval the tran·
sistor collector to emitter voltage changes from a satura·
tion level to a level equal to or approaching the clamp
voltage while the collector current has only changed by
10%. Typical values for this time interval at various
current levels are shown in Table 3 at 250 e and lOOoe
case temperature.
The time interval labeled tt occurs after the fall time
and appears as a "tail" on the trailing edge of the
collector current waveform. It is measured. for this
discu~sion. from the 10% point to the 2% point; and
during this interval the collector to emitter voltage is
equal to the clamp voltage. Typical values for these time
intervals are also shown in Table 3.
.
. Since power dissipation occurs during the total time
period tv + tf + tt and each interval can be affected by
external conditions. some applications may require a
specific analysis in order to accurately predict total
device dissipation.
FIGURE 8 - TURN-OFF WAVEFORM
I
Vcl.mp """'\
_I
,..... CJLLECTOb
CURRENI
\
-,..... ~~9IC
•
I ,COLLECTOR
VOLTAGE
\
.0
0.1 Vclamp
'
'.....
/\
r-\'!-
'vr
f/
/
VO.
"'
r-
IIC
~IC
-
1--
1--',-
\
I--
TABLE 3-INDUCTIVESWITCHING
PERFORMANCE
IC
Amps
TC
DC
3.0
25
100
to
"I
1.30
5.0
25
100
2.10
1.60
2.40
10
25
100
2.00
2.50
tv
t,
III
III
0.17
0.25
0.08
0.16
0.09
0.16
0.05
0.08
0.1)4
0.08
0.09
0.20
tt
tv+t,+tt
0.20
0.25
0.08
0.23
0.20
0.13
0.42
0.58
0.20
0.48
0.38
0.49
"I
"I
Note: All Data Recorded in the Inductive Switching
Circuit Shown in Table 1.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 10 - TURN-OFF TIME
FIGURE 9 - TURN·ON TIME
3.0 k
2.0 k
Vec=250V
lellB = 5.0
TJ·250 C
tr
"
1.0 k
700
500
10 k
7.0 k
. 5.0 k
-
-
3.0 k '
2.0k
~
"
..;:100
:E
;: 200
I-
~.
3D
0.02
181.=182
TJ' 250 C
~
;;; 1.0 k
!w3DD
-10Of0
0
I~R~:~~gv
I,
Ii
., 500
tdl!l VBElolf) = 5.0V
" r-.
300
200
V
100
0.5
0.1
0.2
0.5
1.0
2.0
5.0
10
0.02
20
0.05
0.1
0.2
0.5
1.0
2.0
IC. COLLECTOR CURRENT lAMP)
IC. COLLECTOR CURRETN lAMP)
4-328
5.0
lP
20
2N6546, 2N6547
FIGURE 11 - THERMAL RESPONSE
~
:0
0
7
O. 5
""~
~
O. 3
~
O. 2
o • 0.5
02
r01
in
~
~
01
;i 0.0 7 - 005
~ 00 5 - 002
;: 00 3
00 2"";"
a
~
~ 00 1""'....
001
w-:::-
n
-
f-:
~
P(pkl
tSLrL
-r~~
V
TJlpkl - TC' Plpkl ZOJCIII
OUTY CYCLE, 0 • .,112
SliGiErW\
002
ZnJCIII' rltl ROJC
ROJC • 1.0 0 CIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
~EAO TIME AT.,
005
IIIII
01
05
02
20
1.0
I I
10
50
I I 1111'11
20
50
I I
100
I
I I III
200
500
10k
t. TIME (ms)
FIGURE 13 - REVERSE BIAS SAFE
OPERATING AREA
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
0
10 ns
0
0
!5 5. 0
100".
"...
~ 2. 0
1. 0
-
a'"
O. 5
g_ o.o.
o
2
1
80.05
F5
de
I
~
0.02
0,0 1 CURVES APPLY BELOW RATED VCEO
0.00 5
20
30
50 70
5.0 7.0 10
~~;X2~~5:~O~WL~rES~,
D:' 16
~
...
~
VCEX( ..
'-'
'"
~
8
~
m ~~~m~~ ~
200
100
;j-
..-
.1
T
8.0
VBE(olf)': 5 V
I - VeED(.u.)
4.0 r--TC" 1000e I
I
I
vejX(.u.)
o
o
300 400
I
lellBI .. 5,0
12
:>
TC," 250~
BONDING WIRE LIMIT
THERMAL LIMIT
(SI NG LE PU LSE)
SECOND BREAKDOWN LIMIT
-
~gn~~:m~~ i~~~47, I
1.0 ms
s..Oms
~
0
•
100
200
300
400
500
VCE.COLLECTOR.EMITTERVOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 14 - POWER DERATING
100
~ I::---...
"""
0
............
"""
THERMAL
DERATING
0
.......
r--....
0
I'......
"'.
SECOND BREAKDOWN
DERATlNG-
r---..
r-.....
.............
t-....
"
0
o
o
40
80
120
Te, CASE TEMPERATURE (OCI,
160
........
"""
200
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be' subjected to
. greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve on
Figure 14.
T J(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal Iimitations will reduce
the power that c§n be handled to values less than the'
limitations imposed by second breakdown. Use of reverse
biased safe operating area data (Figure 13) is discussed in
the designer's application section.
'
4-329
,I
2N6548
2N6549
DUOWATT
\
NPN SILICON DARLINGTON
AMPLIFIER TRANSISTORS
NPN SILICON
DARLINGTON AMPLIFIER
TRANSISTORS
· .. designed for amplifier and driver applications where high gain is
an 'essential requirement, low power lamp and relay drivers and
power drivers for high·current applications such as voltage regulators.
a
•
High DC Current Gain hFE = 25,000 (Min) @ IC = 200 mAde - 2N6548
= 15,000 (Min) @ IC = 500 mAde - 2N6548
•
Coliector·Emitter Breakdown Voltage BVCES = 40 Vdc (Min) @ IC = 100 /lAde
•
Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 1.0 Ade
•
Duowatt Package 2 Watts Free Air Dissipation @ T A
= 250 C
I
Q
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Po
"Collector-Emitter Voltage
Collector-Emitter Voltage
·Collector-Base Voltage
• Emitter-Base Voltage
·Collector Current - Continuous
• Base Current - Continuous
-Total Power Dissipation @TA = 2SoC
Derate above 25°C
Total Power Dis,ipation@TC= 25°C
Derate above 2SoC
TJ,T,tg
Value
40
40
50
12
2.0
100
2.0
16
10
80
-55 to +150
-
260
Po
• Operating and Storage Junction
Temperature Range
·Solder Temperature, 1116" from Case for
Unit
Vdc
Vdc
Vdc
Vdc
Adc
mAde
Watts
mW/oC
Watts
mWI"C
°c
°c
10 Seconds
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance. Junction to Case
I
Symbol.
R6JA
R6JC
I
MIX
I
62.5
12.5
I
I
-Indicates JEDEC Registered Data.
I
Unit
°CfW
°CfW
b'J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
4 COLLECTOR
• ----r
K
of
-G
l
LrN-hl
'r----:r..J
R
rt=::::::J'=tJ
MILLIMETERS
DIM MIN MAX
A 21.84 22.35
9.91 10.41
B
4.19
4.44
C
0.61
0.11
D
3.68
3.94
F
2.61
G 2.41
1.10
1.9
0.48
0.66
J
K 12.10
1.1B
2.03
L
9.91 10.16
N
Q
3.56
3.81
2.41
2.61
R
T 13.21 13.91
INCHES
MIN MAX
0.B60 0.B80
0.390 0.410
0.165 o.m
0.024 0.028
0.145 0.155
0.095 0.105
0.061 0.011
0.019 0.026
0.500
0.010 O.OBO
0.90 0.400
0.140 0.150
0.095 .105
0.520 0.550
CASE 306-04
TO·202AC
4-330
-
2N6548,2N6549
• ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwISe noted.)
I
I
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 100 pAde, VBE = a)
BVCES
40
-
Vde
Collector-Base Breakdown Voltage
IIC = 100pAde,IE = a}
BVCBO
50
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC a)
BVEBO
12
-
Vdc
Collector Cutoff Current
(VCB = 30 Vde, IE ~ 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
IVEB = 10 Vde, IC a}
lEBO
-
100
nAdc
2N654B
2N6549
25,000
15,000
150,000
15(1,000
2N6548
2N6549
15,000
10,000
-
2N6548
2N6549
5,000
3,000
CIIa ract.ristic
Max
Unit
OFF CHARACTERISTICS
=
=
ON CHARACTERISTICS III
DC Current Gain
(lC = 200 mAde, VCE = 5.0 Vdc)
(lC
(lC
= 500 mAde,
= 1.0 Ade,
VCE = 5.0 Vde)
VCE
-
hFE
= 5.0 Vde)
Vde
Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 2.0 mAde)
(lC = 2.0 Ade, IB = 4.0 mAde)
VCE(sat}
-
1.5
2.0
Base-Emitter Saturation Voltage
(lC = 1.0 Ade, I B = 2.0 mAde)
VBE(sat}
-
2.0
Vde
VBE(on}
-
2.0
Vdc
High Frequency Current Gain
(lC = 200 mAde, VCE = 5.0 Vde, f = 100 MHz)
Ihle l
1.0
-
-
Output Capacitance
IVCB" 10 Vde, IE = 0, I = 1.0 MHz}
Cob
-
7.0
pF
20,000
15,000
-
Base-Emitter On Voltage
l'k = 1.0 Ade, VCE = 5.0 Vde}
-
r
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lC = 50 mAde, VCE = 5.0 Vde, I = 1.0 kHz)
-
hie
2N654B
2N6549
• Indicates JEDEC Registered Data
11} Pulse Test: Pulse Width .. 300 ps, Duty Cycle .. 2.0%
TYPICAL CHARACTERISTICS
FIGURE 1 - ACTIVE·REGION SAFE·OPERATING AREA
There are two limitations on the power handling ability of a
transistor:
average junction temperature and second breakdown.
Safe operating area curves indicate le,VeE ,limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figur. 1 is based on T J(pk} = 1500 C; TC is variable
depending on conditions. Second breakdovvn pulse limits are valid
for duty cycles to 10% provided TJ(pk}';;;; 150°C. TJ(pk} may be
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed bV second brea kdown.
4-331
•
2N6548, 2N6549
TYPICAL CHARACTERISTICS Iconlinuedl
FIGURE 2 - DC CURRENT GAIN
300 k
FIGURE 3 - "ON" VOLTAGES
I
200 k
2.0
VCE=5.0V
1.8
Ti· 2bot
-
./
25°C
.J..I...I+I"":~
~ 30 k
~
20 k
•
......
-55°C
c
~
VBElon11!> VC~ •
~'\.
7.0 k
5.0 k
VCElsa'II!>Ic/IB • 500
O.S
3.0 k
20
3D
50
70
100
200 300
500 7~0 1.0 k
IC. COLLECTOR CURRENT ImAi
0.6
20
2.0 k
TJ = 25°C
~
ii 2.0
;c
0-
ffi -0.10
500 mA
1.2
8~ Q.8
...
II II
1.0 2.0
5.0
25°C to 1250C.u,....-:: i--'"
~ -0.30 I-r5 -0.35
S
-55 0e to 25°C
I
IIIII
IIIII
500 700 1.0 k
L
i-O.40
-0.45
20
500 1.0 k 2.0 k 5.0 k
....t:::t:Rtf
ovt1'i f
0-
10 20
50 100 200
lB. BASE CURRENT I.AI
I--
IIIII
~ -0.25
Ic=50mA
~
~1250t
w
LOA
V
ILJ,.H::::::.-f'"
B -0.20
~
> 0.4
0.5
250C to 1250C
'OVC for VCEI"t)
U
ffi -0.15
2.0A
200 mA
~
II II
IIII
;;; -0,5
::;;;
2.0 k
IIIII
*Applies for Ic/le to; hFE/2
G
>
ffi 1.6
~
1I1111
50 70 100
200 300
500 700 1.0 k
IC: COLLECTOR CURRENT (mAl
3D
+0.5
c
--
"
"
FIGURE 5 - TEMPERATURE COEFFICIENT
FIGURE 4 - COLLECTOR SATURATION REGION
2.4
:;
5~0 V .
I
~
10 k
ii)
i.;o
i.;o
VBEIAlII!>Ic/IB • ~
ffi
"
I
TJ = 125°C
100 k
z
;;; 70 k
'"0- 50 k
II
50 70
3D
100
200 300
IC. COLLECTOR CURRENT (mAl
2.0k
FIGURE 6 - THERMAL RESPONSE
1.0
O.
-
7 0 = 0.5
0.5
~~
ffi::;j
~:i
0.3
0.2
-
- .!!+::: 0.05
0.1
~~
O. I
-
10
0
~
.......
0
i"""-
~ 3.0
~
~ F==i"'
r-
I"-.
~2. 0
"\
\
;;
0
0.05
--
~
C,b
0
2.0
5. 0
G
0.1
0.2
0.5
1.0
2.0
5.0
10
20
1.0
5.0
50
7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT {mAl
VR. REVERSE VOLTAGE {VOLTSI
4-333
200
300
500
•
216551
216552
216553
DUOWATT
NPN SILICON ANNULAR
AMPLIFIER TRANSISTORS
NPN SILICON
AMPLIFIER TRANSISTORS
... designed for general-purpose, medium-voltage, medium power
amplifier and driver applications; series, shunt and switching regulators, and low and high frequency inverters and converters .
•
High Collector-Emitter Breakdown VoltageBVCEO = 100 Vdc (Mini @ IC = 1.0 mAdc ~ 2N6553
•
•
Duowatt Package - 2 Watts Free Air Dissipation @ T A = 25 0 C
Complements to PNP 2N6554/5/6
MAXIMUM RATINGS
Rating
·Collector-Base Voltage
.. Emitter-Base Voltage
·Collector Current
Continuous
Peak (11
.. Base Current
-Total Power Dissipation @ TA
Derate above 2SoC
Total Power Dissipation
Derate above 2SoC
2N6551 I 2N65521 2N6553
60 I 80 I 100
60 I 80 I 100
,
5.0
,
1.0
2.0100
18
,
2.0
Po
16
10
Po
,
80
TJ,Tstg - - 5 5 to + 1 5 0 -
Symbol
·Collector-Emitter Voltage
@
= 2SoC
T C = 25°C
·Operating and Storage Junction
Temperature Range
·Solder Temperature, 1/16" from Case
for 10 Second.
VCEO
VC80
VE80
IC
-
,
260-
Unit
Vde
Vdc
Vde
Ade
mAde
Watts
mW/oC
Watts
mW/oC
°c
°c
THERMAL CHARACTERISTICS
Ch...ctwiltic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
MIIx
R8JA
R8JC
62.5
12.5
'Indicates JEDEC Registered D,ta.
(11 <10 ms, < SO% Duty Cycle
Unit
°CIW
°CIW
STYLE 1.
PIN I.
2.
3.
4
EMITTER
BASE
COLLECTOR
COLLECTOR
-MILLIMETERS
DIM MIN MAX
A 21.B4 22.35
B
9.91 10.41
C
4.39
4.65
o 0.58 0.74
F
3.56
4.06
G
2.41
2.67
H
1.70
1.96
J
0.48 0.66
K 12.19 12.95
L
1.65
2.03
N
9.91 10.16
o 3.56 3.81
R
1.07
1.75
7.87
9.14
INCHES
MIN MAX
0.860 O.BBO
0.390 0.410
0.173 0.183
0.023' 0.029
0.140 0.160
0.095 0.105
0.067 0.07.7
0.019 0.026
0.480 0.510'
0.065 0.080
0.390 0.400
0.140 0.150
0.04
0.069
0.310 0.360
CASE 306.04
TO-202AC
4-334
2N6551,2N6552,2N6553
• ELECTRICAL CHARACTERISTICS
I
(T A: 25 0 C unless otherwise noted.)
I
Charactoristie
Svmbol .
Min
Max
60
80
100
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Vde
BVCEO
IIc =1.0mAde.IB - 01
2N6551
2N6552
2N6553
ColIl"'tor·Base Breakdown Voltage
(lC' 100jJAde. IE = 0)
-
BVCBO
60
80
100
2N6551
2N6552
2N6553
Emitter·Base Breakdown Voltage
(IE = 100 JJAde, IC • 0)
Collector Cutoff Current
-
5.0
BVEBO
Vde
Vde
nAdc
ICBO
(VCB • 40 Vde, IE • 0)
(VC8 • 60 Vde, IE • 0)
(VCB' 80 Vde, IE' 0)
-
2N6551
2N6552
2N6553
Emitter Cutoff Current
100
100
100
100
lEBO
nAdc
(VEB • 4.0 Vde, IC' 0)
ON CHARACTERISTICS (1)
DC Current Gain
IIc •
IIC'
IIC'
IIc •
hFE
10 mAde, VCE = 1.0 Vde)
SO mAde, VCE • 1.0 Vde)
250 mAde, V CE • 1.0 Vde)
SOD mAde, VCE • 1.0 Vde)
-
60
BO
60
25
Collector-Emitter Saturation Voltage
300
-
Vde
VCE(sat)
-
(lC' 250 mAde, lB' 10 mAde)
(lC' 1.0 Adc, IB • 100 mAde)
0.5
1.0
-
Base-Emitter On Voltage
VBE(on)
1.2
Vde
375
MHz
(lC • 250 mAde, VCE • S.O Vde)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC
= 100 mAde, VCE •
75
IT
5.0 Vde, I • 20 MHz)
Collector-Base Capacitance
pF .
18
Ceb
(VCB' 20 Vde, IE • 0, f· 1.0 MHz)
• Indicates JEDEC Registered Data
(1) Pul~e Test: Pulse Width':; 300 JJS, Duty' Cycle':; 2.0%
TYPICAL CHARACTERISTICS
"" FIGURE 1 - CURRENT-GAIN - BANDWIDTH PRODUCT
" 300
~
VCE=5.0V
t
TJ = 25 0C
~ 200
Q
_I-'"
g:
"
I;
/'
z~ 100
~
I
Z
~~
.
..........
......
.......
FIGURE 2 - CAPACITANCES
200
TJ
100
10
{,50
g r--
.....
-
Cib
30
20
~_
0
U
0
'"'"
::J
J::-
10
1---
I-.
1.0
5.0
3.0
30
5.0
~ 2lo~
7.0
10
20
30
50
10
100
200
300
500
IC, COllECTOR CURRENT (rnA)
2.0
0.1
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-335
20
~:
I I
50
100
2N6551,2N6552,2N6553
TYPICAL CHARACTERISTICS (continued)
FIGURE
400
z 200
'"
....
~
a
100
S0
o
60
u
II
~
FIGURE 4 - "ON" VOLTAGE
1.0
lln~ 12~OC
;;:
iii
3- DC CURRENT GAIN
.....
h
....
~-l50J
'"
l~ ......
1IIIITJ=25~cl
~
=t.t~L
0.8
!JJJLI@ 1!/la
~
~
0
0.6
~.
N
w
f--
'"
<[
':;
0.4
0
>
J~~= i.ov
.....
:>
0'"
0.2
VCE(sat!@lclla= 10
20
1.0
5.0
2.0
10
20
50
100
IC. COLLECTOR CURR.ENT (mAl
500
200
o
1.0
1.0 k
1.0
~
:~~iPlies fO; IcAs" hFE/2
'B~J M.'~CE(sati
0.8
~
o
500
1.0 k .
I I III
+25 0 C to +1250 C
J
-550C t. +250
> 0.6
!
0.4
\
o
...IS
o.2 ~·lorA(
~
8
ul
~
T 1 IT
5
ffi
~II
-55~t~J.b
I lR
1.0A
~~
~
0 IIITtt ~
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
IS. SASE CURRENT (mAl
BVS forVaE
IS·200.AlStep
TJ= 25 0C
~400
50 100 200
-2.5
1.0
500
-----
.L. ~ ~
<;0
II:
200
o
J. ~
~
V
U
TTm
1111
10
20
50
100 200
IC. COLLECTOR CURRENT (mAl
SOD
1.0 k
-VCE".50V
i
104
~
103 r==TJ= 150DC
a
-I"'""
II:
102
j
101
t
'"
"
~IDDOC
8
'~REVERSE
FORWARO=
!i!100
- 100
oIL
5.0
FIGURE B - COLLECTOR CUTOFF REGION
~
u
II
2.0
lOS
L& ~ I..,...- ~ .....
~
g; 300
::>
~
+25,C tr12~of
0
fl11
5DO
~
,
FIGURE 7 - COLLECTOR CHARACTERISTICS
!
-
10
20
50
100 200
IC. COLLECTOR CURRENT (mAl
1.0
T~ 12510J
!:lo
5.0
2.0
FIGURE 6 - TEMPERATURE COEFFICIENTS
FIGURE 5 - COLLECTOR SATURATION REGION
_
1-1--
~
~
~250C
IC' 2000A
2.0
4.0
6.0
S.O
10
12
VCE. COLlECTOR·EMITIERVOLTAGE (VOLTSI
10-1
-0.4
14
4-336
-0.2
+0.2
+0.4
VSE. SASE·EMITIER VOLTAGE (VOLTS)
+0.6
2N6551,2N6552,2N6553
TYPICAL CHARACTERISTICS (continuedl
FIGURE 9 - THERMAL RESPONSE
10
O. 7
5 0·0.5
O.
;(0
~~. 03
~~ 0.2
~g
0I
~~
...
!-
-
0.1
~~ 0.0 7
Single Pulse
A
0.02
-
i""
f::; I[Os
:=.~oo 5
~~ 0.03
'-"
1::;;;;;:
~
:Ef1Jl --
Smgle Pulse
-t~J
I
001
0.02
Duty Cycle, 0 = 1J/12
0.05
0.1
05
0.2
1.0
2.0
50
10
20
50
I,TlMElmsl
2,0 k
l',
,1.0m.
1.0 k
I-
0
0:
300
200
~
:::0
...
0:
~
8
~
100
70
0
...
"I
OOI-lS
TC =25°C
TA·25 0 C
del,
...
II
1\
de "
2 B551;
TJ=150oC
- BONDING WIRE LIMIT
THERMAL LlMIT,SINGLE PULSE
2N6552
0 - - - SECOND BREAKDOWN LIMIT
(Applies Below Rated VCEol
2N6553
20
2,0 3,0
5,0 7.0 10
20
30
50
1.0
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI
-
70
100
200
500
1.0k
100
FIGURE 11-POWER DERATING
1,0
t--.
"""r--..."- ------r-
§ O.B
0:
~ 0.6
Thermal Derating "
u..
co
z
~
!i
--
Second Breakdown Derating
r-..
i-
" ""-
ffi 0.4
c
i 0.2
.....
~
o
o
20
40
60
l.Ok
o CU RVES APPL V FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II
TJlpkl -TC· Plpkl R"JCIII
5.0 k 10 k
20 k
50 k 100 k
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown, Safe operating 'area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; Le" the transistor must not be subjected to
greater dissipation than the curves indicate,
The data of Figure 10 is based on TC ~ 250 C; TJ(pkl
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C, Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
T J(pkl may be calculated from the data in Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
FIGURE 10 - ACTIVE·REGION SAFE-OPERATING AREA
1 700
50
ZOJAIII • ,It! ROJA
ROJA • 62.50 CIW Max
Plpkl
0.02
0.01
i'"
0.01
ZOJCIII - ,III ROJC
ROJC:: 12.SoCJW Max
80
100
Te. CASE TEMPERATURE (OC)
4-337
120
""
140
160
•
2N6554
2N6555
2N6556
DUOWATT
PNP SILICON ANNULAR
AMPLIFIER TRANSISTORS
•
PNP SILICON
AMPLIFIER TRANSISTORS
... designed for general·purpose, medium-voltage, medium power
amplifier and driver applications; series, shunt and switching regulators, and low and high frequency inverters and converters .
•
High Collector-Emitter Breakdown Voltage BVCEO: 100 Vdc (Min) @ IC = 1.0 mAdc - 2N6556
•
•
Duowatt Package - 2 Watts Free Air Dissipation
Complements to NPN 2N6551/2/3
@
T A: 25 0 C
MAXIMUM RATINGS
Rating
·Coliector·Emitter Voltage
·Collector-Base Voltage
"Emitter-Base Voltage
·Collector Current
Continuous
Peak
·Base Current
"Total Power Dissipation
Derate above 2SoC
@
TA
= 25°C
Total Power Dissipation @ T C = 25°C
Derate above 2SoC
·Operating and Storage.Junction
Temperature Range
Symbol
Unit
VCEO
VCBO
VEBO
IC
Vdc
Vdc
Vdc
Adc
2N65541 2N6555J 2N6556
60 I 80 I 100
60 I
80 I 100
5.0
1.0
2.0100
IB
2.0
Po
16
10
Po
80
TJ,Tstg - 5 5 t o + 1 5 0 -
..
.
.
..
260-
·Solder Temperature. 1116" from Case
mAde
Watts
mW/oC
Watts
mW/oC
°c
°c
for 10 Seconds
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance. Junction to Case
Symbol
Max
R/IJA
ROJC
62.5
12.5
'Indicate. JEDEC Registered D.t•.
Unit
°CIW
°CIW
STYLE 1:
PIN 1. EMITIER
2. BASE.
3. COLLECTOR
4 COLLECTOR
MILLIMETERS
DIM MIN MAX
A 21.84 22,3S
9.91 10,41
B
4,44
4.19
C
0
0.61
0.11
3,94
F
3,68
2,67
G 2.41
1.70
1.96
H
0,66
J
0.48
K 12.10
2,03
1.18
L
9.91 10.16
N
Q
3.56
3.81
2,67
2.41
R
T 13.21 13.97
INCHES
,MIN MAX
0.860 0.880
0,390 0.410
0.16S 0.175
0.024 0.028
0.14S O.ISS
0.09S O.IOS
0,067 O.Oll
0.019 0.026
-I
0.070
0.390
0.140
0.09S
0.520
CASE 306-04
TO·202AC
4-338
2N6554,2N6555,2N6556
"ELECTRICAL CHARACTERISTICS (TA
I
= 25 0 C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc
2N6554
2N6555
2N6556
Collector-Base Breakdown' Voltage
(lC
60
80
100
-
60
80.
100
-
Vde
BVCBO
= 100llAde, IE = 0)
2N6554
2N6555
2N6556
Emitter-Base Breakdown Voltage
(IE = 100 I'Ade, IC = 0)
BVEBO
Collector Cutoff Current
(VCB
(VCB
(VCB
Vde
BVCEO
= 1.0 mAde,lB = 0)
Vde
5.0
nAdc
ICBO
= 40 Vde, IE = 0)
=60 Vde, IE = 0)
= 80 Vde, IE = 0)
-
2N6554
2N6555
2N6556
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
100
100
100
100
lEBO
nAde
ON CHARACTERISTICS (11
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, V CE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
VCE(satl
60
80
60
25
(lC = 250 mAde, Ie = 10 mAde)
(lC = 1,0 Ade, Ie = 100 mAde)
300
Vde
-
Base-Emitter On Voltage
(lC = 250 mAde, V CE = 5.0 Vde)
-
veE (on)
0.5
1.0
1.2
Vde
375
MHz
18
pF
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IT
75
(lC = 100 mAde, VCE = 5.0 Vde, 1= 20 MHz)
Collector-Base Capacitance
Ceb
(Vce = 20 Vde, IE = 0, 1= 1.0 MHz)
• Indicates JEDEC Registered Data.
(11 Pulse Test' Pulse Width'; 3001'5, Duty Cycle'; 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 1 - ACTIVE-REGION SAFE'()PERATING AREA
5.0
2.0
"-
Ii:
~
1.0
ffi
O.5
~
~
de
TA=250C
~'" o. I
=
0.05
There are two limitations on the power handling ability of 8
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limi,ts of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
.....j
""
,,~
The data 01 Figure 1 is based on T J(pk) ~ 1500 C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
~TJ :1500CBONDING WIRE LIMIT
-
8
100J.ls
de
~1.0 ms
TC = 250C
rfI
D. 2
"-
-
-
0.01
0.005
1.0
lor duty cycles to 10% provided T J(pk) .;;; 1500 C. T J(pk) may be
THERMAL LlMIT,SINGLEPULSE, TC -250C
~ 0.02 - - - - SECOND BREAKOOWN LIMIT
I I
2.0
(Applies Below Rated vCEo·jf
J
3.0
20
5.0 1.0
10
calculated from the data in Figure 6. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
2N6554- 2N6555
2N6556
30
50
10
100
VCE, COLLECTOR·EMIITER VOLTAGE IVOLTS)
4-339
•
2N6554,2N6555,2N6556
TYPICAL CHARACTER ISTICS (continued)
FIGURE 2 - DC CURRENT GAIN
300
--
200
z
:;:
'"t-
~
•
a
100
'"
Q
~
FIGURE 3 - "ON" VOLTAGE
1.0
TJ=1250C
0.8
.............
25lc
-
-55°C
0_
50
2: 0.6
2,0
10
20
50
100
200
c5
>
0.4
0.2
500 1000
5.0
2.0
~
Q
5
0:;
Ic=10mA SOmA
250mA 500 mA
III
25 DC to t25 0 C
-55 DC to 250C
II
-0,50
*
1.0 A
~
W_
-Apphesfor IC/IS "'hFEf 2
-0.75
-1.00
~ -1.2 5
'"
......
o
0,05 0.1
0.2
O.
,
OVB lor VeE
II
.~ -'2.00
I1.0 2.0
5.0
10
20
50 100 200
-2,25
1.0
500
12m,to~~
-1.50
~ -1.75
o. 2
8
ul
500 1.0 l
-0.25
~
~ o.4
>'"
200
·OVC for VCE(satJ
0
'ii
'"
~
10
20
50
100
IC, COLLECTO~ CURRENT (mAl
FIGURE 5 - TEMPERATURE COE'FFICIENT
.- +0.25
TJ = 25°C
~ O.8
~
g o.6
i-"
r-
VCE (satl@lc/le = 10
1."
FIGURE 4 - COLLECTOR'SATURATION REGION
~
r:--
,:
IC, COLLECTOR CURRENT (mAl
0
-
,....... ....
....
VBE(onl@VCE = 5.0
w
5,0
1111
'"j'!:
VCE= 1,0V
30
1,0
1111
II
VBE (sail@ Iclle-lO
~
. . . .J\
TJ = 25°C II
2.0
IB, eASE CURRENT (mAl
I5.0
iiYtiCto 25tc
10
50
20
100
200
500 1.0 k
IC, COLLECTOR CURRENT (mAl
FIGURE 6 - THERMAL RESPONSE
1.0
0.7
0.5
0=0.5
....
~o
~~ 0.3 I- 0,2
!~
0.2
ffi~
0.1
U;W
f::;;
,::::;
0.1
1[05
~~ 0.07
Ii""
b;;jiii
SlnglePulst
e:.~ 0.05
-I-
-
- - ZsJC(U = rltl ROJC
ROJC = 12.5 0C,w Max
EfLfl --
Single Pulse
0.02
-t~J
0.01
1"
I
0.01
0.01 0.02
ZOJA(tl = r(tl ROJA
ROJA =62.50c,w Max
P(pkl
-=0
0.02
't:'~ 0.03 ~
Duty Cvde, 0 = 11/t2
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME
50
(m~
4-340
100
200
500
1.0k
2.0k
oCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT tl
TJ(pkl -TC =P(pkIROJC(t)
S.Ok 10k
20k
SOk lOOk
2N6554,2N6555,2N6556
TYPICAL CHARACTER ISTICS (continued I
FIGURE 7 - CAPACITANCE
FIGURE B - CURRENT -GAIN - BANDWIDTH PRODUCT
500
0
TJ = 25°C
300
I-
200
e
~
~ 100
~ 70
:1 50
'"
l-
30
f-.
~ 20
u·
Applies for Rated VCBO
10
7.0
0
5. 0.1
-
~
0.5
1.0
2.0 3.0 5.0
100
I"---
........ 1---
;;\
I
z
70
;;:
10
20
""
~ 50
r--
Cob
0.2
V
e
C,b
I-
~
VCE = 5.0 V
TJ = 25°C
~ 20 0
50
100
I
i-
30
5.0
7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT (mAl
VR. REVERSE VOLTAGE (VOLTSI
4-341
200
300
500
•
2N6557
2N6558
2N6559
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS
DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS
· .. designed for high-voltage TV video and chroma output circuits,
high-voltage linear amplifiers, and high-voltage transistor regulators.
a
•
High Collector-Emitter Breakdown Voltage BVCEO = 350 Vdc (Min) @ IC = 1.0 mAdc - 2N6559
•
Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 30 mAdc
•
Low Coliector·Base Capacitance Ccb = 3.0 pF (Max) @ VCB = 20 Vdc
•
Duowatt Pa~kage 2 Watts Free Air Dissipation @ T A = 25 0 C
MAXIMUM RATINGS
Rating
Symbol
·Coliector·Emitter Voltage
VCEO
·Collector-Base Voltage
Vr.RO
*Emitter-Base Voltage
VEBO
·Collector Current
Continuous
IC
Peak
*Base Current
IB
*Total Power Dissipation @ T A:::: 25°C
Po
Derate above 2SoC
Total Power Dissipation@Tc= 2SoC
Po
Derate above 2SoC
·Operating and Storage Junction
Temperature Range
·Solder Temperature, 1/16" from Case
for 10 Seconds
TJ,T stg
2N6557\ 2N655S\ 2N6559
250
250
.
.
·..
·.
\
\
·
300 \ 350
300 \ 350
6.00.5-.
0.72502.0161080-
_-55to+150~
.
260-
Unit
Vdc
Vdc
Vdc
Ad.c
mAde
Watts
mW/oC
Watts
mW/oC
°c
DIM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Case
STYLE I
PIN I EMITTER
2 BASE
3 COLLECTOR
4 COLLECTOR
°c
Symbol
Max
Unit
ROJA
. ROJC
62.5
12.5
°C/W
°C/W
A
8
C
D
F
G
H
.. Indicates JEOEC Registered Data.
J
K
L
N
Q
R
T
MILLIMETERS
MIN MAX
21.84 21.35
991 1041
4.19
4.44
D.61
0.71
3.6B
3.94
1.41
2.67
1.70
1.96
0.48
0.66
11.70
I.7B
203
9.91 10.16
3.56
3.81
241
2.67
13.21 13.97
INCHES
MIN MAX
0.860 0.8BO
0390 0410
0.165 0.175
0.024 0.028
0.145 0.155
0.095 0.105
0.067 0.077
0.019 0.026
0.500
0070 0.080
0.390 0.400 '
0.140 0.150
0.095 0.105
0.520 0.550
CASE 306-04 •
TO·202AC
4-342
2N6557,2N6558,2N6559
"ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
[
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector·Emitter Breakdown Voltage
IIc = 1.0 mAde: Ie
2N6557
2N6558
2N6559
250
300
350
Coliector·BR~e
BrcukdC'wn Voltage
(lC" 100 I'Ade, I~ = 01
250
300
350
Collector Cutoff Current
(Vce = 150 Vde, IE = a)
(Vce = 200 Vde, IE = a)
(VCB = 250 Vde, IE = 0)
-
-
-
0,2
0.2
0.2
-
0.1
25
40
180
-
0.6
1.5
VSE(on)
.-
0.85
Vde
IT
45'
200
MHz
Ccb
-
3.0
pF
ICBO
2N6557
2N6558
2N6559
i::mltter Cutoff Current
(VBE = 5,0 Vde, IC = O)
-
6.0
BVEBO
= 100 I'Ade, IC = 01
-
V;;;--
BVCBO
2N6557
2N6558
2N6559
Emluer·Base Breakdown Voltage
(IE
Vae
8VCEO
= O}
lEBO
Vde
/lAde
,uAdc
ON CHARACTERISTlCS(1}
DC Current Gain
-
hFE
(lC = 1.0 mAde, VCE = 10 Vde)
IIc = 30 mAde, VCE = 10 Vdcl
Collector-Emitter Saturation Voltage
VCE(s.t}
IIc = 30 mAde, IB = 3,0 mAdel
(lc = 50 mAde, 18 = 5.0 mAde)
Base-Emitter On Voltage
Vde
(lC = 30 mAde, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC· 10 mAde, VCE
= 20 Vde, I = 20 MHzl
Collector-Base Capacitance
(VC8 = 20 Vde, IE = 0, 1= 1,0 MHz)
* Indicates JEDEC Registered Data.
11l Pulse Test: Pulse Width
<:; 300 /lS, Duty Cycle -:. 2.0'•.
TYPICAL CHARACTERISTICS
FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA
1.0
0::
~ 0.2 a
de
>~ 0.1 0
,,100,..5
de
~TC=25'C
'"
TA = 25'C-
~ 0.0 5
'"GO!
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves Indicate Ie-VeE limits of the traOSlstor
that must be observed for reliable operation; i.e" the transistor
I.Oms
must not be subjected to greater dissipation than the curves indicate.
5.0 ms
0.02 1
:: 0:0
-
-
-
0.5 0
f-1-TJ.l~tIa! f--
,'he data of Figure 1 is based on TJ(Pk) = 150°C; TC ir.variable
depending on conditions. Second breakdown pulse limns are valid
....
::..-::=
lor duty cycles to 10% provided TJ(pk)';;; 150o C. TJ(pk) may be
1
BONUING WIRE LIMIT
80.005 - - - THERMAL LIMIT,SINGLEPULSE, TC = 25'C
- - - SECOND BREAKDOWN LIMIT
!:?
thermal limitations Will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
=±±±tt~N6557
2N655
0.00 2
0.00 1
1.0
calculated from the data in Figure 6. At high case temperatures;
2.0
S.O
10
20
VCE, COLLECTOR·EMITTER
50
2N6559--r
100
200
VOLTAG~
500 1.0k
(VOLTS)
4-343
2N6557,2N6558,2N6559
TYPICAL CHARACTERISTICS
(contin~ed)
FIGURE 2 - DC CURRENT GAIN
300
TJ
20 0
FIGURE 3 - "ON" VOLTAGES
4
~ 12~oCI
TP251dC
1. 2
.-.:"
100
..........
25°C
0
0
0
•
A
0
7.0
5. 0
6
VB
'\.~
4
1.0
2.0 3.0 5.0
10
20 30
50
100
IIIII
0
0.3
200 300
/
I
VCE" 10 V
~~~~~~at)
o. 2
0.5
:::::1
@ICIIB" 10
os,
IVCE" 10 V
VCE"2.0V
3. 0
0.3
.r~Wi")
ri1")@
~
I
0
B
'-
-55 uC
0
0.5
I
L
~5.0
ICIIB"!.
1.0
2.0 3.0 50
10
20 30
50
100
200300
IC. COLLECTOR CURRENT ImA)
IC. COLLECTOR CURRENT ImA)
FIGURE 5 - TEMPE·RATURE' COEFFICIENTS
FIGURE 4 - COLLECTOR SATURATION REGION
2. 0
3. 0
TJ" 25°C
I--*Appriesfor
u
~ 2. 0
le/'e :O;;;;hFE/2
i
6
l-
0
i::
u
25 0 C to 125°C
r--'OVC for VCElsal)
~
2
-55 DC to 250C
I
I
250C to lZ5 0C
8
~-1. 0
8
Ie =
o. 4
1.0mA 3.~,,:,A
30
rnA
lOrnA
I II mlJ. N.I
1t lIr
0.01 0.02 0.05 0.1
o
I
!;;:
SOmA
\l 'll
~-2. 0
100mA
ill
~-3.
lIN. I
r-:-- OVIB fo' JBE
-55°C to 25 0 C
0
I
I
I
20
30
i .
-1-m5.0 ffi
1.0 2.0
10 20
0.2
0.5
lB. BASE CURR€NT ImA)
50 100
-4.0
1.0
2.0
3.0
50 7.0
10
I
50
70 100
IC. COLLECTOR CURRENT ImA)
FIGURE 6 - THERMAL RESPONSE
1.0
0.7
0" 0.5
0.5
:i Ci
~~ 0.3
t;~
i;;~
f::: 0.05
0.1
0.03
0.02
-
-
Single Pulse
~ --ZOJAIII"'IIIROJA
ROJA " 62.50 CIW Max
P(pkl
"" .f"
0.02
0.01
0.01
0.02
o CURVES APPLY FO R POWER
-t~j
I
0.01
- - ZOJCIt) " 'II) ROJC
ROJC" 12.5 0 CIW Max
,
Single Pulse
:=_~ 0.05
"O:"~
"'"
1::;;;;
~
0.1
~~ 0.07
-=-0
I-
c- 0.2
~: 0.2
Duty Cycle. 0::: Itltz
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t. TJME (ms)
4-344
100
200
500
1.0k
2.0k
PULSE TRAIN SHOWN
READ TIME AT 11
TJ(pkl-TC" P(pkl ROJclt1
5.0 k 10 k
20 k
50 k 100 k
2N6557,2N6558,2N6559
TYPICAL CHARACTERISTICS Icontinuedl
FIGURE 8 - CURRENT·GAINBANDWIDTH PRODUCT
FIGURE 7 - CAPACITANCE
70
50
30
10 0
TJ
f-.
z
10
U
70
u·
3.0
;::
250C
1.0
0.7
0.5
-
0
~r-
0
§ 5.0
2.0
VCE' 20 V
Tr250C
0
tt:-
20
w
u
o
"
I"\.
[\
0
r- iPPl'jS 'II';"
1.0
2.0
5.0
~~BO
10
........
Ccb
20
50
'00
2UO
10
05
500
07
1.0
20
30
50
7.0
10
20
30
50
IC, CO llECTO R CU RR ENT ImAI
VR, REVERSE VOL TAGEWOl TSI
APPLICATIONS INFORMATION
The 2N6558 is primarily designed for use in the R. G, and B output
stages of color television receivers and with a high BVCEO. it can
supply the video amplitude requirements of any known system.
The low feedback capacitaflce provides good video bandwidth with
modest drive current requirements.
Typical drive is from an
emitter-follower with a 4.7 k emitter-resistor operated from a
20-Volt supply. It will, therefore, be operable directly from a
number of available chroma demodulators. The low output capac-
itance of this device adds little to the total load capacitance, altowing improved bandwidth for a given collector load resistor. Two
typical applications for the 2N6558 are shown in Figures 9 and 10.
Device dissipation will reach approximately 1.6 Watts under
worst-case signal conditions and some heat sinking is required at
ambient temperature above SOoC.
Used as a color difference output, where drive and bandwidth
requirements are less severe, the 2N6558 can be operated with
27 k ohm load resistors (worst-case dissipation would then be only
0.6 Watts). The device can, therefore, be operated as a colordifference output without any heat radiator in ambient temperature ..
to 150 -10.61 162.51 = 112,5 0 C,
In addition the safe operating area of the 2N6558 will fill the
requirements of the luminance output function with a total
equivalent load' of 5.0 kllohms. Worst;case dissipation can reach 3
Watts, this requires
a total ROJA of 1150-65)/3 = 2B.40C/W. To
achieve this a 2" x 3" aluminum plate will be required.
FIGURE 10 - 2N6558 AS RGB OUTPUT,MATRIXING COLOR
DIFFERENCE AND LUMINANCE INPUTS
FIGURE 9 - 2N6558 AS RGB OUTPUT WITH RGB INPUT
Mtlll!
CM~OiU"
O~"'OC'JL"'TCR
MC1lU
CkROMA
DEMODULATOR
4-345
•
2N6569
12 AMPERE
•
NPN SILICON POWER TRANSISTOR
POWER TRANSISTOR
NPN SILICON
The 2N6569 is a general· purpose, EPIBASE power transistor
designed for low voltage amplifier and power switching applications.
40 VOLTS
100 WATTS
• Low Cost
• Safe Operating Area - Full Power Rating to 40 V
• EPIBASE Performance in Gain and Speed
• Metal Can Reliability - TO·3 Package
• AII·Purpose Replacement for In'dustry Standard 2N3055
rFAa=iLc
*MAXIMUM RATINGS
Rating
Collector·Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Symbol
VCeO(sus)
VCBO
VeBO
iC·
- Peak
Base Current - Continuous
- Peak
IB
Emitter Current - Continuous
Ie
- Peak
Total POVYer Dissipation @ T C = 25°<;
Po
Derate above 2SoC
Operating and Storage Junction
Temperature Range
T J,Tstg
Valuo
40
45
5.0
12
24
5.0
10
17
34
100
0.572
Watts
W/oC
-65 to +200
OC
Unit
Vdc
Vdc
Vdc
Ado
Characteristic
Maximum Lead Temperature for Soldering
SEATING
Max
A8JC
TL
1.75
265
Purposes: IllS" from Case fo lOs.
F--
I
J -
Adc
STYLE 1:
PIN I. BASE
Unit
uCIW
°c
MILLIMETERS
MIN MAX
INCHES
MAX
MIN
39.37
1.550
A
0.830
21.08
B
7.62 0.250 0.300
C 6.35
1.09 0.039 0.043
D 0.99
3.43
0.135
E
30.40 1.177 1.197
F 29.90
11.18 0.420 0.440
G 10.67
5.59 0.210 0.220
H 5.33
J 16.64 17.15 0.655 0.615
12.19 0.440 0.480
K 11.18
3.84
4.09 0.151 0.161
0
26.67
1.050
R
Collector connected to case.
CASE 11·(11
(TO·3)
4-346
NOTE:
1. aiM "O"IS OIA.
2. EMITTER
CASE: COLLECTOR
DIM
Symbol
0 ___
__
c---
Ado
THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case
L~:=kj--+K
Ie
~LANE
J.
2N6569
*ELECTRICAL CHARACTERISTICS (TC: 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC: 200 mAde, IB: 0)
VCEO(sus)
Collector Cutoff Current
(VCEV : 45 Vdc, VBE(off) : 1.5 Vde)
(VCEV: 45 Vde, VBE(om : 1.5 Vdc, TC: 100°C)
ICEV
Emitter Cutoff Current
(VEB: 5.0 Vde, IC = 0)
lEBO
40
-
-
1.0
10
-
5.0
15
5.0
200
100
Vdc
mAde
mAde
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vde, t = 1.05 (non·repetitive))
ON CHARACTERISTICS
DC Current Gain
(lC = 4.0 Ade.'VCE = 3.0 Vde)
(lC = 12 Ade, VCE : 4.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 4.0 Adc, IB: 0.4 Ade)
(lC = 12 Ade, IB = 2.4 Ade)
VCE(sat)
Base-Emitter Saturation Voltage
(lC
= 4.0 Adc, IB :
-
hFE
Vde
-
1.5
4.0
VBE(sat)
.-
2.0
Vdc
fT
1.5
15
MHz
Cob
75
750
pF
0.4 Ade)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 Ade, VCE: 4.0 Vde, f te "
= 0.5 MHz)
Output Capacitance
(VCB = 10 Vde,IE: 0, f te ,,: 1.0 MHz)
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
(VCC: 30 Vde, IC = 2.0 Ade, IBI : 0.2 Ade,
tp = 25 "s, Duty Cycle .. 1.0%)
tr
(Vec: 30 Vdc, IC - 2.0 Adc, I Bl - I B2 - 0.2 Ado,
tp = 25 "s, Duty Cycle .. 1.0%)
tf
td
-
ts
-
·Indicates JEDEC Registered Data.
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
Vee
r-r251'.~+30:e
+1~ ~O__
Re,
Scope
-9.~-:O
tr,tf <:: 10 ns
Duty Cycle"" 1.0%
01
-4.0 V
-=
AS and RC Varied to Obtain Desired Current Levels
01 must be fast recovery type.
4-347
0.4
I'S
1.5
"s
5.0
"s
1.5
"s
•
2N6569
FIGURE 2 - THERMAL RESPONSE
ffi
1.0
N
~
~ 0.7 1=0=0.5
~ 0.5
o
~
w
0.3 1-0(2
~
1-0.1
~ 0.2
~ O. 1
p-
~ 0.03
•
°
--
i--::: ;;iii!'
,....
0.05
~
;;;:, 0.07 1-0.02
ffi 0.05
....
ffi
R6JC(') = rlU RUC
RUC = 1.750CM MIX
CURVES APPLY FOR POWER
PULSE tRAIN SHOWN
READ TIME AT '1
TJ(pk) - TC = P(pk) R6JC(t)
f&
p.. P:O.Ol
0.02 I-- ~Sing'ePu'se
DUTY CYCLE, D = '1112
iii
II
: 0.01
....
0.01
0.05
0.02
0.1
0.2
1.0
0.5
2.0
t, TIME
5.0
10
50
20
100
I I I II III
200
500
1000
(m~
FIGURE 3 - SAFE OPERATING AREA
30
20
....
r-'
!Ii$
....... j.,
...
1.0ms'
.... ,
.... r-' ._.
~ 10
'"~
'"
~
8
de
.... ,
5.0
3.0
r-
2.0
1. 5
4.0
=:..:-.:
I
,
Safe operating area curves indicate IC-VCE limits of the
transistor being observed for reliable opllration; i.e., the
transistor must not be subjected to greater dissipation than
the curves indicate. This transistor is thermally limited over
its entire operation area. Figure 4 m'ay be used to derate
the curves shown or an effective RIIJC(t) may be computed
from Figure 2 for pulsed operation.
.... ....
5.Dms
7,0
~
',a'.Sms
.... ,
...... ,
....
¥~~~~!I~iT:~~ted
I I I I I
......
"
I
II
5.0
7.0
10
20
30
50
70 80
vCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
FIGURE 4 - POWER DERATING
1.0
.........
"- ..........
0.8
'"t;
"- i'-...
0
;:::
0.6
to
Z
~
r--...
0.4
0
........
0.2
o
o
.........
w
~
w m
00
~
TC. TEMPERATURE (OC)
00
4-348
.........
~
~
~
2N6569
FIGURE 6 - COLLECTOR SATURATION REGION
FIGURE 5 - OC CURRENT GAIN
1000
en
~
500
z
;;:
.. 200
....
r- I-
25"C
t-- :-....
ili
~ 100
..,13
"
~
f:= :::::
~
ffi"
" "-
-55"C
III
IC= 1.0A
TJ =
II
2~"C
S.OA
4.0 A
r'i
1.2
l=
;;
~ 0.8
50
"G
j
8
r-....
20
0.4
l!l
>
10
0.1
0.2
O.l
0.5 0.7 1.0
2.0 l.O
IC. COLLECTOR CURRENT (AMPERES)
5.0 7.0
10
10
5.0
20
50
100 200
500
lB. SASE CURRENT (mA)
1000
2000
5000
FIGURE 8 - COLLECTOR CUT-OFF REGION
FIGURE 7 - "ON" VOLTAGES
1.4
1.2
fl
III
III
ITT
"
2
~ 1.6
VCE·4.0V
TJ • 150"C
2.0
103
TJ' 25"C
-
;;:
VCE-lOV-
102
-/-
TJ • 115"C
V
.3
~ 1.0
....
I
....--
VBE(sat)@ICIIB= 10
~ 0.8
~
-"
:.,.....-
13
w
"'"
~
!:; 0.6
">,,: 0.4 I-- -
~
VBj@VfEi4'i'l
I
I
0.2
8
II
II
--'"""'
VCE(sat)@le/IB= 10
0.1
0.2
O.l
0.5 0.7
~
V
1.0
2.0
l.O
5.0 7.0
100"C
101
10 0
10-1
10-2
==
IC-ICES
~ ~R ..e".
10-l
-0.4
10
25"C
F
-O.l
-0.2
Forward
-0.1
0.1
0.2
O.l· 0.4
VSE. SASE·EMITTER VOLTAGE (VOLTS)
IC. COLLECTOR CURRENT (AMPERES)
4-349
0.5
0.6
•
2N6576
2N6577
2N6578
15 AMPERE
POWER TRANSISTORS
NPN SILICON POWER DARLINGTON TRANSISTORS
General-purpose EpiBase power darl ington transistors, suitable
for linear and switching applications_
•
NPN SILICON
, DARLINGTON
60,90,120 VOLTS
120 WATTS
•
Replacement for 2N3055 and Driver
•
High Gain Darlington Performance
•
Built-In Diode Protection for Reverse Polarity Protection
.. Can Be Driven from Low-Level Logic
•
Popular Voltage Range
•
Operating Range - -65 to +200 0 C
'MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCeO(susl.
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
VCS
VFR
IC
Peak
2N6576I 2N6577 2N6578
60
90
120
60
120
I 90
7.0'----15
30
0.25_0.50_
Unit
Adc
1
.·
··•
IS
Emitter Current - Continuous
Ie
15.25_30.5_
PD
120_0.685_
_-65to+200_
Total Power Dissipat10n
Derate above 2SoC
@
T C = 2SoC
Operating and Storage Junction
Temperature Range
TJ,Tstg
Vdc
...
Base Current - Continuous
- Peak
- Peak
Vdc
•
Vdc
Adc
Adc
Watts
WloC
°c
THERMAL CHARACTERISTICS
Charact.ristj~
Thermal ResIstance. Junction to Case
Maximum Lead Temperature for Soldering
Symbol
Max
Unit
ROJC
1.46
265
°C/W
TL
°c
Purposes: 1116" from Case for lOs.
"Indicates JEDEC Registered Data
DIM
A
B
C
D
E
F
G
,
H
DARLINGTON SCHEMATIC
K
n
Collector
R
MILLIMETERS
MIN
MAX
6.35
OS7
-
2UO
10.67
5.21
16.64
11.18
3.84
-
39.37
22.23
11.43
1.09
3.43
30.40
11.18
5.72
17.15
12.19
4.119
26.67
INCHES
MAX
MIN
-
~.25O
0.038
-
1.177
0.420
0.205
0.855
0.440
0.151
-
CASE 11-03
TO-3
Sase
Emitter
4-350
1.550
0.B75
0.450
0.043
0.135
1.197
D.44O
0.225
0.675
O.
0.161
1.050
2N6576,2N6577,2N6578
·ELECTRICAL CHARACTERISTICS ITc
I
= 25°C unless otherwise noted.)
Characteristic
I
Symbol
Min
Ma.
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltagel1)
(lc
~
200 mAde. 16
= Ol
Vde
VCEOlsus)
2N6576
2NS5'/7
2N6578
SO
90
170
1.0
-
-
Collector Cutoff Current
IVCE = Rated Value)
ICEO
-
Collector Cutoff Current
ICER
-
5.0
mAde
ICEV
-
5.0
mAde
ICBO
-
0.5
mAde
mAde
IVCER = Rated VCEOlsus) Value. RBE = 10 kU. TC = 150°C)
Collector Cutoff Current
VCEX = Rated VCEOlsus) Value. VBEloff) -. 1.5 Vdcl
Collector Cutoff Current
IVCB" Rated Value)
ON CHARACTERISTICS
DC Current Gam
IIc
IIc
lie
lie
hFE
= 15 Ade. VeE = 4.0 Vdcl
= 10 Ade. VCE = 3.0 Vdcl
= 4.0 Ade. VCE = 3.0 Vde)
= 0.4 Ade. VeE = 3.0 Vdel
Collector-Emitter Saturation Voltage
lie = 15 Ade. I B = 0.15 Adel
lie = 10 Ade.IB = 0.1 Ade)
VCElsat)
Base-EmItter SaturatIOn Voltage
lie = 15 Ade.IB = 0.15 Adel
lie = 10 Ade. IB = 0.1 Adcl
VBElsatl
-
100
500
2000
200
5.000
20.000
-
4.0
2.8
-
-
Vde
Vde
-
4.5
3.5
VF
-
4.5
IVce=30Vdc.IC= lOAdc.IBl =0.1 Ade.
tp = 300 ;as. Duty Cycle" 2.0%1
td
-
0.15
tr
-
1.0
'";as
IVCC - 30 Vde.lc = 10 Adc.IBl - IB2 - 0.1 Adc.
tp = 300 ;as. Duty Cycle" 2.0%1
ts
-
2.0
;as
7.0
;as
COllector-Emitter Diode Voltage Drop
Vdc
(lEe = 15 Ade)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit Current Transfer Ratio
(Ie = 3.0 Adc. VCE = 3.0 Vdc. f = 1.0 MHzl
SWITCHING CHARACTERISTICS
RESISTIVE LOAD IFigur. 21
Delay Time
Rise Time
Storage Time
Fall Time
tf
• Indicates JEDEC Registered Data
11) Pulse test: Pulse W,dth" 300 ;as. Duty Cycle" 2.0%.
FIGURE 1 - RATED FORWARD BIASED
SAFE-OPERATING AREA
.
~
~
.-- 1-•
20
10
i
5.0
B
'"
2.0
'"~
1.0
++-
--
40
Il
~-~
"',
-dt~
a transistor: average Junction temperSilure and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
!
100",==
~""'"
---
1.0m{t~-=
200 e
" "_w_ TJ"
Bondrng Wire limit
E- - Thermal Limit, Smgle Pulse, TC '" 25 C-
The data of Figure 1 is based on TC =- 2SoC; T Jlpk) is variable
D
= 0.& - - Second Breakdown limit
8
--
O. I
5.0
10
depending on power level. Second breakdown pulse limits are
Jom,::;
D
!:.} O. 2
0.0&
2.0
There are two limitations on the power handling ability of
--
20
2NS&76
2N6&77
2N6&78
valid for duty cycles to 10%.
T Jlpk) may be calculated from the data in Figure S. At high
case temperatures thermal limitations will reduce the power that
r-
r--
40
can be handled to values less than the limitations imposed by
second breakdown.
~
60
100
150
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-351
2N6576,2N6577,2N6578
FIGURE 3 - COLLECTOR·SATURATION REGION'
FIGURE 2 - DC CURRENT GAIN
1
10 k
I
~125'C
2k
g
~
1\
y
./
1/
[\
r\
\
I
VCE • 3 Vdc
Y V
500 -c. -30'C
1k
lHT
\
1\
I
200
\
0.2
SA
1A
0.5
1.0
2.0
5.0
lC, COLLECTOR CURRENT IAMPSI
10
lTI
O. 5
15
11
0.0001
0.001
0.0003
0.02
0.05
0.1
II II
0
1 I
.1.
i!
- - VBElsal1 @ICIIB - 100
r- t- IC/IB' 100
w
«
'"
f-- I-- ___ VBEI,nl@VCE'3V,25'C
/
M
;;;
~
~
0
>
I-
~
1.5
o
+25 0 C
>' 1.5
0.5
-
II
0.2
/
2
I-JOOC
-
>
11/;50'C
>
~.
o
w
'"
;
-30'C
J
JJ,UoJ c
.
+2S C
i!
~
'"
w
l-
~
0.005 0.01
FIGURE 5 - BASE·EMITTER VOLTAGE
~
'"
~
8
0.002
IB' BASE CURRENT IAMPSI
FIGURE 4 - COllECTOR SATURATION VOLTAGE
0
lH'
ftitt
1\
1
•
1111
1I11
!\
+150OC
5k
l-
r-....
J...-
z
«
'"
5
~
F:::;::::
f-- f-"
-
-:::,...-
-
~
,.;
~~
0.5
0.5
IC, CO~ECTOR CURRENT IAMPSI
0.2
10 15
10
0.5
15
IC' COLLECTOR CURRENT lAMPS)
FIGURE 6 - THERMAL RESPONSE
o. 1
O. 7 = 0-0.5
-
o.5
3 - _1 0.2
I..--:::;: ."..
2
r - -0.1
---=-
p[Ilfl
"""
IE ~O.05
5t--0.02
0.0 1
0.1
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpkl - TC - Pipit) 9JCII)
t~
71---
0.0 2~
9JClt) - rll) 9JC
9JC -1.46
.....::::
" SINGLE PULSE
DUTY CYCLE, 0 • 11/12
0.01
I
0.2
0.3
1111
I
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I, TIME(m~
4-352
I I
I
I I
20
30
50
70
100
200
300
500 700 1000
2N6576,2N6577,2N6578
FIGURE 8 - SWITCHING TIMES
.FIGURE 7 - SWITCHING TIMES TEST CIRCUIT
0
Vee
ICIIS" 100
VCE" 30 V
+30 V
If
RC Scope
r-t+1~ ~O __
:1
w
251JS
'"
;::
-9.~-~D
t r • tf ~ 10
1
I,:;;.
's~
O. 5
51
ns
01
I--
Duty Cycle"" 1.0%
O. 2
-4.0 V
t--.
'd
O. 1
1.5
RB and Rc Varied to Obtain Desired Current Levels
01 Must be Fast Recovery Type, eg:
10
15
Ie. COLLECTOR CURRENT (AMPS)
FIGURE 10 - CAPACITANCE
FIGURE 9 - COLLECTOR CUT·OFF REGION
104 F
REVERSE-'="' =FORWARO
l
§
'"a
'"o
~
8
~
103
102
~
w
F"'VCP30V
100
u
z
;0
U
;t
r- TJ - 151JOC
Cob-
;3
101
100
•
u'
TJ" 25~C
t-- 1000C
t-- 25 0C
10- 1
-0.6
·0.4
10
-0.2
+0.2
+0.4
+0.6
+O.S
+1.0
+1.2
+1.4
15
20
VSE. SASE EMITIER VOLTAGE (VOLTS)
100
30
50
70
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE 11 - COLLECTOR·EMITTER VOLTAGE
5.0
~
2:: 4. 0
w
~
!:;
o 3.0
>
./
o
-30oC
'"
~
2.0
w
1. 5
~
o
~ 1.0
t: 0.5
+25 D&
;/ +lsohc
.-
.-i. It,i'L£
0.2
0.3
-
-0;::;
I- ~ :....-
f-"'"
1- .....
0.5 0.7 1.0
Z.O
Ie. COLLECTOR CURRENT (AMPS)
4-353
5.0
10
15
'1
2N6591
216592
2N6593
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS
DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS
___ designed for horizonta_1 drive applications, high-voltage linear
amplifiers, and high-voltage transistor regulators_
•
•
High Collector-Emitter Br~akdown Voltage BVCEO = 250 Vdc (Min) @ IC = 1.0 mAdc - 2N6593
•
Low Collector-Emitter Saturation Voltage VCE(sat) = 1_5 Vdc (Max) @ IC = 200 mAdc
•
Duowatt Package 2 Watts Free Air Dissipation @T A = 25 0 C
"
MAXIMUM RATINGS
Rating
·Collector-Emitter Voltage
·Collector·Base Voltage
Symbol
2N6591
150
150
VCEO
VCBO
• Emitter-Base Voltage
·Collector Current Continuous
Peak 111
eBase Current
*Total Power Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
Total Power Dissipation@Tc=250C
Po
..
...
IB
Po
..
.
Derate above 2SoC
·Operating and Storage Junction
Temperature Range
_
TJ,T Slg
·Solder Temperature, 1/16" from Case
for 10 Seconds
I 2N65921 2N6593
I
I
200 I 250
200 I 250
5.00.51.0100-
2.01610BO-55.to + 1 5 0 260-
Unit
Vde
Vde
Vde
Ade
mAde
Watts
mW/oC
Watts
mW/oC
PIN
A
Symbol
I
I
R9JA
R9JC
I
I
I
Max
62.5
12.5
I
I
°C/W
I
°C/W
-Indicates JEDEC Registered Data.
11) Pulse Test: Pulse Width-< 1.0 ml, Duty Cycle < 50%.
Unit
•
MilLIMETERS
INCHES
MIN MAX
MIN MAX
21.84 22.35
9.91 10,41
0.410
4,39
4,65
0.183
C
0.58 0.74
.
0.029
D
4.06 0.140 0.160
3.56
F
2.41
2.67 0.095 0.105
G
1.70 1.96 0.067 0.077
H
J
0.48 0.66 0,019 0.026
K 12.19 12.95 0.480 0510
l
1.6S
2.03 0,065 0,080
9.91 10.16 0.390 0.400
N
Q
3.56
3.81 0.140 0.150
.0
1.75 10.04Z 0.069
R
7.87
9.14 0.310 0.360
DIM
Characteristic
I. EMITTER
1.8ASE
3. COLLECTOR
4. COllECTOR
vc
THERMAL CHARACTERISTICS
Thermal Resistance. Junction 10 Ambient
Thermal Resistance. Jun~tion to Case
STYLE 1:
°c
c+
CASE 318.(14
TO-202AC
4-354
2N6591,2N6592,2N6593
*ELECTR ICAL CHARACTER ISTICS (T A = 25°C unless otherwise noted.l
Characteristic
Svmbol
Max
Min
Unit
OFF CHARACTERISTICS
Collecto·r-Emitter Breakdown Voltage
IIc = 1.0mAde.IB = 01
Vde
BVCEO
2N6591
2N6592
2N6593
Collector-Base Breakdown Voltage
IIc = 100 pAde. Ie = 01
-
150
200
250
Vde
BVCBO
2N6591
2N6592
2N6593
-
150
200
250
Emitter-Base Breakdown Voltage
-
5.0
BVeBO
Vde
lie =.100I'Ade.lc = 01
Collector Cutoff Current
(Vce = 100 Vde. IE = 0)
(VCB = 150 Vde.le = 0)
(VCB = 200 Vde. Ie = 01
Emitter Cutoff Current
(VeB = 5.0 Vde. IC = 01
\
ICBO
-
0.2
02
02
2N6591
2N6592
2N6593
40
30
30
250
250
250
2N6591
2N6592
2N6593
40
40
30
200
200
200
2N6591
2N6592
2N6593
lEBO
j.J.Adc
01
}.lAde
ON CHARACTERISTlCS(lI
DC Current Gain
IIc
hFE
= 10 mAde. VCE
= 10 Vdel
(lC = 100 mAde. VCE = 10 Vdel
COllector· Emitter Saturation Voltage
IIc = 200 mAde. IS = 20 mAdel
VCE(,.tl
-
O.S
Vde
Base-Emitter On Voltage
VBE(onl
-
1.0
Vde
fT
35
300
MHz
Ceb
-
12
pF
IIc = 100 mAde. Vce = 10 Vdel
DYNAMIC CHARACTERISTICS
Current·Gain - Bandwidth Product
(IC
=
50 mAde. VCE = 20 Vde. f = 20 MHzl
Collector-Base Capacitance
(VCB = 10 Vde. Ie = O. f = 1.0 MHzl
.. Indicates JEDEC Registered Data.
(11 Pulse Te .. : Pulse W,dth .. 3001". Duty Cycle .. 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 1 - CURRENT·GAIN - BANDWIDTH PRODUCT
:J:
FIGURE 2 - CAPACITANCE
100
.70
50
300
~
VCE' 20 V
TJ' 250 C
I-
~ 200
Q
~
:J:
l-
e
~ 100
-
~
30
..........
';. 20
...
t"-....
'"'
~
z
~
z
:.i
50
'"
13
.t:
30
10
7.0
.C.b
TJ' 25'C
- ..
- po.
5 5.0
70
~
,...
\
-
'"
10
20
30
50
Ccb
U 3.0
II
2.0
70
100
IC. COLLECTOR CURRENT (mAl
1.0
0.3 0.50.7 1.0
-
II
2.0 3.0 6.07.0 10
20 30
VR. REVERSE VOLTAGE (VOLTSI
4-355
-
60 70 100
200300
2N6591,2N6592,2N6593
TYPICAL CHARACTERISTICS (Continued'
FIGURE 3 - DC CURRENT GAIN
FIGURE 4 - "ON" VOLTAGE
SIlO
1.0
TJ' 250C
300
--
200
z
:;;:
....
-
•
ag
-
~
~
~ 20
1'-.' '
2.0
"'~
5.0
10
20
50
IC. COLLECTOR CURRENT (mA)
100
200
~o
2:
~
1/
o
0.5
500
1.0
i
~
04
g.
0.2
8
>
0.8
--
I"
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.07.0 10
lB. BASE CURRENT (mA)
:>
~
....
I-
:>
50 70 100
;(
.s....
TA' 25~C
.:_
I
PULSE WIDTH • 300",- f---IB~
DUTY CYCLE.;; 2.0%
160
........: ;...---:
B 120
h 'l
co
o
~
..,
-./
~
~
80
fL. V
o
!) 40
~
r
o
o
r--
1.0"'''
--;f."
-I
20
/
V
--- -
J-..H1:
/
V
V
-550C to +25 DC
0.5
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
50
100
200
FIGURE 8 - COLLECTOR CUTOFF REGION
,....-
VCE' 150V
-
TJ'150dC
-
I- 1000C
600 "A
I
400.A
I
20LA
2
I
10
oVB forVBE
-2.4
0.2
FIGURE 7 - COLLECTOR CHARACTERISTICS
200
+25 0 Cto +125 0 C
f-25 0 C to +1250 C
~ -1.6
\
"'~
I II IIII
1.0
VBE(on) @VCE • 10 V
«
~ O.4
~
~
--VCE"2.0V
VCE'lOV
0
7.0
5. 0
0.5
.
-I-H-ttll
O. 6
w
30
II III
J I II:
VBE(sa,) @ICIIB • 10
-
=-55 0C _
0
0
O. B
- -
250e
.. 100
~co
-
TJ -1500e
30
~
-
40
10-3
-0.4
50
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
4-356
REVERSE
r-
FORWARD
250C
-0.2
+0.2
+0.4
VBE. BASE·EMITTER VOLTAGE (VOLTS)
+0.6
2N6591,2N6592,2N6593
TYPICAL CHARACTERISTICS (Continued)
FIGURE 9 - THERMAL RESPONSE
I.0
O.1
oo. 5
;{6
~~ 0.3
~§ 2
-
o.~
r- 0.2
0.1
'"
~~ O. I ~ Io.Os
"''''
~ i1 0.0 1
II""
....
~~ 0.0~
~~
-'~
-
::;!fji
Single Pulse
le;CItl" rltl ROJC
ROJe'" 12.5 0CIW Max
pEIUl
Smgle Pulse
0.02
0.03 A
-t~~j
0.01
0.02
0.0 1
001
1""
I
0.02
Duty Cycle, 0 = 1t/12
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
~O
20
100
200
~OO
10k
1.0k
-
-
l'JA(rl " r(,1 ROJA
ROJA = 62 soeIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II
TJ(pkl -TC" P(pkl ROJC(,I
~.O
k 10 k
20 k
50 k 100 k
t, TIME Ims)
FIGURE 10 - ACTIVE REGION SAFE'()PERATING AREA
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operatIon; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 2So C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;. 2So C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
T J(pk) may be calculated from the data in Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
-,
100
300
VCE. COllECTOR-EMmER VOL TAGE (VOL TSI
FIGURE 11 - POWER DERATING
1.0
~
""~~
~ 0.8
'"
.
'"to
u..
'"z:
~
ffi
c
Thermal--.
0.6
Derating
I
Derating
'"
r---
'"
0.4
'"~
~ 0.2
20
40
I
Second Bseakdown
............
!"'-
"- .........
"
60
80 100
120
TC. CASE TEMPERATURE (OCI
4-357
'" "
140
160
•
2N6594
12 AMPERE
POWER TRANSISTOR
PNPSILICON
PNP SILICON POWER TRANSISTOR
40 VOLTS
100 WATTS
The 2N6594 is a general·purpose. EPI·BASE'" power transistor
designed for low voltage amplifier and power switching applications.
It is a complement to the NPN 2N6569.
II
•
Safe Operating Area - Full Power Rating to 40 V
•
EPI·BASE Performance in Gain and Speed
•
Lower Voltage. Economical Complement to the 2N3055
Lr~
r~'K
ESEATlN/~
·MAXIMUM RATINGS
Rating
Collector~Emitter
Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Svmbol
Value
Unit
VCEOlsusl
VCBO
VEBO
IC
40
45
5
12
24
5
10
17
34
100
0.572
-65 to +200
Vdc
Vdc
Vdc
Adc
- Peak
Sase Current - Continuous
- Peak
IB
Emitter Current - Continuous
- Peak
Ie
Total Povver Dissipation
@
T C -- 25°C
Po
Derate above 2SoC
Operating and Storage Junction
Temperature Rang~
TJ.Tstg
Maximum Lead Temperature for Soldering
Adc
Watts
W/oC
°c
STYLE I:
PIN I. BASE
2. EMITTER
CASE: COLLECTOR
DIM
Svmbol
Max
Unit
ROJC
TL
1.75
°CIW
°c
265
NOTE:
I. DIM "Q" IS CIA.
MILLIMETERS
MIN MAX
INCHES
MIN
MAX
-
39.37
A
1.550
B
21.08
- 0.830
C 6.35
7.62 0.250 0.300
0 0.99
1.09 0.039 0.043
E
3.43
0.135
30.40 1.177 1.197
F 29.90
G 10.67
11.18 0.420 0.440
H 5.33
5.59 0.210 0.220
J 16.64 17.15 0.655 0.675
K 11.18
12.19 0.440 0.480
n 3.84 4.09 0.151 0.161
R
26.67
'1.050
Collector connected to case.
-
Purposes: 1/16" from Case for 10 seconds
-
-
11-01
(TO·3)
CASE
4-358
I
Adc
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
PLANE
2N6594
*ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.!
I
I
Charact.,istic
Symbul
Min
Max
40
-
Unit
OFF"CHARACTERISTICS
Colleclor-Emitter Sustaining Voltage (1}
(lC = 200 mAde,ls = 0)
Collector Cutoff Current
IVCEV = 45 Vde, VSElofO = 1.5 Vde)
IVCEV = 45 Vde, VSElofll = 1.5 Vde, TC = 100°C)
VCEOI,us)
_.
ICEV
Emitter Cutoff Current
IVEB = 5 Vd., IC = O}
Vde
mAde
-
1
10
IESO
-
5
mAde
ISlb
2&
-
Ade
15
200
100
SECOND SREAKDOWN
Second Breakdown Collector Current with Base Forward Bia'5ed
IVCE = 40 Vdc, 1=1 s Inon-repetitiveU
ON CHARACTERISTICS
DC Current Gain
(lc = 4 Adc, VCE = 3 Vdc}
(lc = 12 Ado, VCE = 4 Vdc)
-
hFE
5
Collector-Emitter Satuiatlon Voltage
IIc = 4 Ade, Ie = 0,4 Ad.)
IIc = 12 Ade, Ie = 2.4 Ade}
VCE(,al)
Base-Emitter Saluration Vol rage
IIc = 4 Ade, IS = 0.4 Ad.)
VeEI,.t)
Vde
-
1.5
4
2
Vde
DYNAMIC CHARACTERISTICS
fT
2.5
25
MHz
Cob
100
1000
pF
-
0.4
-
Current-Gain - Bandwidth Product
(lC = 1 Adc, VCE = 4 Vdc. lIen = 0.5 MHz}
Output Capoclt<:mce
IVcs = 10 Vdc, IE = O. f test
= 1
MHz}
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
=2 Ade, ISl =0.2 Ado,
Delay Time
(Vec = 30 Vdc, IC
A,se Time
tp = 25 "s, Duty Cyel ... 1%)
Storage Time
F.lll Time
(VCC =30 Vde, Ie = 2 Adc,lBI
tp = 25 '''. Duty Cycle .. 1%}
td
t,
=182 = 0.2 Ade,
Is
If
*tndicates JEDEC Registered Data.
11} Pul •• TO>l, PW ~ 300 /01', Duty Cyel ... 2%.
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
Vee
-30V
-1
~~
H'25".~e
0__
RS
Scope
+9.~-;'-D
01
tr,tf '" 10 ns
Duty Cycle'" 1.0%
-4.0 V
-=
AS and RC Varied to Obtain Desired Current Levels
01 must be fast recovery type.
4-359
'"
1.5
_.
I"
5
-
1.5
'"
I"
•
2N6594
FIGURE 2 - THERMAL RESPONSE
~
~
~ 0.7 ~O-O.5
~
0.5
o
~
w
~
~
;t
•
ffi
I-
0.3 t-012
~ O. 2
ROJC(!) =,(I) ROJC
ROJC =1.75 0 CIW Max
o CU RVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 'I
,-::;; laiiili
,:::;;;; !II'"
1--0.1
TJ(pkl- TC =P(pk) ROJCItI
¢P
lb
O.05
O.
0.0 7t--0.02
0.05
f{W-
~ 0.0 3~ ~0.01
'ffi"" 0.0 2)-- !' Single Pulse
~
'""
-:i
DUTY CYCLE. 0 = '11'2
ill I I I I IIII
I I
~ 0,0 1
0.02
0.01
0.1
0.05
0.2
0.5
10
20
100
200
500
100
,.TIME(msl
1::
FIGURE 3 - SAFE OPERATING AREA
0
0
·-·d·,
..... ,
r· . t"
,
. r- .....
._.
t-.
1m,
I'
0
de
.....
5m'
-="
2
5
.....
I
I
I.Ll
..... ,
Safe operating area curves indicate 'C-VCE limits of the
transistor being observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than
the curves indicate. Figure 4 may be used to derate the
curves shown or an effective RO JC(t) may. be computed
from Figure 2 for pulsed operation.-
"..... ' .
.,
=:.:-.:. ~~~~:!I~T;~ted
I
"-
.....
5
3 t-
,O.5ms
.....
..1
II
10
3D
20
50
70 80
VCE. COLLEGTGR·EMITIER VOLTAGE (VOLTSI
FIGURE 4 - POWER DERATING
O. 8
'"o
t;
:l:
'"' "- I"..
o. 6
['....
"
'"z
~ o. 4
~
~
o
"~
O. 2
o
o
20
40
60
80
100
120
TC. TEMPERATURE (OC)
4-360
140
160
180
'"
2DD
2N6594
FIGURE 5 - DC CURRENT GAIN
2D
D-
"'""z 100
FIGURE 6 - COLLECTOR SATURATION REGION
r-t-. T~='I~old
r-r-tf::±
70
D
'"
'"c
D
I'-.. I" t:-..
D
!'.
I0
D.I
~ 1.6
-55°C
~ 1. 2
.......
......,
.......
:::i
~
ro.B
\
'"t;
~
i"
D.5 D.7
0.4
7
>
10
D
10
5
20
IC. COLLECTOR CURRENT (AMPERESI
Q
~
w
:
......
Q
I
VBE(onJ @VCE : 4 V
!--
D.S
r-:
V
.D
0.1
ffi
::1
B
./ Y
~
a:
D.3
5000
V
L.
0.5 D.7
I- TJ: 15DoC
10
'"
I--
1000C
~
""'"
REVERSE
IC - ICES
0.1
FORWARD
I-- r-t- 25°C
.-I-I-t"'"
0.2
2Doo
100
~
:3
1/
,;
VeE("'I@le/IB =I~-
1000
I-
.~
>
O.4
500
1000
~~E:~tI @lbIB! 10
II iT
200
VCE:30V
I i II
I.2
IDo
FIGURE 8 - COLLECTOR CUT·OFF REGION
111
~
5D
lB. BASE CURRENT (mAl
FIGURE 7 - "ON" VOLTAGES
I.6
t-
\
:3
t!l
0.3
TJ: 25°C
SA
4A
Q
::"'joo.,
D.2
IC: I A
2
~
~
iii
a:
~
UUl
II
Q
25°C
;;:
a:
=>
~
II
VCE: 4 V
ID
Ie. COLLECTOR CURRENT (AMPERESI
D.ol
<
./
1.0
0.0
'1
2.0
..........
........
r--....
r-....
ICII
r--......
r----...
r-0.6
-
--
i--
~ 1. 5
20
.........
r!!-
r--I-
4
0.8
'Bl. BASE CURRENT (AMP)
12
1.0
1.0
" ........
.,.- / '
- -
:Ii
o
t;
~
f--
o
o
1.0
&.0
20
40
60
BO
100
120
140
160
TC. CASE TEIIPERATURE (oC)
2.
0
FIGURE 9 - SW(TCHING BEHAVIOR versus ICM
10
./
."...
1.5
2.0
'CM. COLLECTOR CURRENT (AMP)
5
/'
>< ~1
o~
1.0
~
;::
8.0 ::
I,
...............
........... V
!w
If
....~
5
9.0
V""
.,.- V
0.5
.......
'!.- /
1
~
=1.15 A. IB =O,B5 A. La = 13 ""
1.5
LB."
20
.............. .......
,;; 0.5
0.&
IBI. BASE CURRENT (AMP)
FIGURE 7 - SWITCHING BEHAVIOR versus
TEMPERATURE
F'GURE 8 - OPTIMUM DRIVE CONDITIONS
0.5
r..........
7
;/
./
r-...
"- r-....
"
ffi
"...~
w
4
"-
0
FIGURE 6 - OPTIMIZING DRIVE @ IC = 2.0 A
2.0
~
3.5
o
9.0
:--.!2
o
-.........::::
'"
0/
5
2.5
.....-
/'
-
If
o
0.5
4-365
L.--
2.0
1.0
1.5
2.0
'CM. COLLECTOR CURRENT (AIIP)
2.5
~
BU204, BU205
FIGURE 10 - THERMAL RESPONSE
I.0
o.
~
7~D-O.S
~_ O.5
--
we
"w
t--~
....
~
D. 3~ 0.2
~~ O.2
in'"
ze
I---
:~
o. 11==.0.05
""Z
I-
0.1
I - I-~
> zO.O 7~0.02
g~o.o5
~
3 - .-IC"
.
t!; ~O.O
_
•
;0,..
pHUl
tt----J
0.01
DUTY CYCLE. D : 11112
0.0 21--- SINGLE PULSE
I II
0.0 I
0.01
0.02 0.03
I III
0.05
0.1
0.2
0.3
0.5
2.0
1.0
3.0
5.0
II
I
30
50
20
10.
R9JCI.) : rlt! R9JC
R9JC· 2.5PC/W MIX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME Alii
TJlpk) - TC' P(pk) RUCI')
100
200
300
1000
500
'. TIME (ms)
FIGURE 12 - DC CURRENT GAIN
FIGURE 11 - COLLECTOR SATURATION REGION
_
!j
o
5.0
30
4.5
4.0 1\
1\
3.5
3.0
2.5
Z.O
1.5
1.0
0.5
0
0.1
;;:
\2.0A
\ 1.5 A
\
\
\
\
\
\.
\.
" ....
i'... ....... r0.2
0.5
0.4
0.3
IS. SASE CURRENT (AMP)
r--..
f - _25°C
z
1\
\ IC'0.7S
VC~=S~OV
I~JC
TJ1:
20
TJ: 25°C
'"
....
i:i
10
:::
~
<.>
e
7.0
"""
"'"' I\.
5.0
~
1\
-
3.0
~
2.0
~
0.6 0.7 O.S 0.91.0
1.5
0.03
0.05
0.5
1.0
0.1
0.2
IC. COLLECTOR CURRENT (AMP)
FIGURE 13 - "ON" VOLTAGES
2.0
1.6
~e
>0.4
o
0.25 0.3
VCE(saU @IClls • 2.0
0.4
----
0.5.
0.7
1.0
IC. COLLECTOR CURRENT (AMP)
4-366
1..
25°C
--:::::F- '(7
100°C
/ L
/2SoC- f-2.0
2.5
2.0
3.0
BU204, BU205
FIGURE 14 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
10
5.0
a:
:;;:
2.0
.5.
Iz
w
1.0
0.5
:=I
0.2
a:
0.1
0
l-
0.05
a:
a:
t:I
t.)
W
--
[-
::...... .....
""' ........I '
1-.. ....... ~
:-..; ~.;::o;
""'
........
1==
TC <90°C
;:-....
r..... ......
""'
-......;;:
0.02 ~---- BONOINGWIRE LIMIT
u
SECONOARY BREAKDOWN LIMIT
0.01 ~
BU204
EO.005
....J
....J
0
0.002
0.001
2.0
.....
:-...
BU205
I
5.0
10
20
50
100
200
500
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
4-367
1.0 j.lS
2.0 I5.0 ~
F=
10 I20 I-50
100
200 ~
500 F
I-'1.0 ms
2.0 ~
5.0
10 ~
F=
. de I-
t::
1000
2000
BU207
BU20S
De!oiigner!oi Data Sheet
5 AMPERE
NPN SILICON
POWER TRANSISTORS
1300 AND 1500 VOLTS
HORIZONTAL DEFLECTION TRANSISTOR
•
· .. specifically designed for' use in large screen color defleption
circuits.
•
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per,
mits the design of most circuits
entirely from the information pre,
sented. Limit data - representing
device characteristics boundaries are given to facil itate "worst case"
design.
Collector-Emitter Voltage VCEX = 1300 Vdc - BU207
1500 Vdc - BU208
• Collector-Emitter Sustaining Voltage VCEO(sus) = 600 Vdc - BU207
700 Vdc - BU20B
• Switching Times with Inductive Loads, tf = 0.4 IJ.S (Typ)
IC = 4.5 A
•
@
~
lr~
r~,
Es:?-I;:
Optimum Drive Condition Curves
, . Glass Base-Collector Junction
i
*MAXIMUM RATINGS
Symbol
Rating
Collector·Emitter Voltagf1l
COllector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (1)
Base Current - Peak 11)
Total Power Dissipation@Tc
Derate above 96°C
= ~50C
Operating and Storage Junction
Temperature Range
VCEOlsus)
VCEX
VEB
IC
ICM
IBM
Po
TJ, Tstg
BU207
600
1300
I BU20B
I
I
700
1500
5
5
7.5
4
12.5·
0.625
-65 to +115
PLANE
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/oC
Thermal Aesistance, Junction to Case
Maximum Lead Temperature for Soldering
PIN 1. BASE
Z. EMITTER
CASE' COllECTOR
THERMAL CHARACTERISTICS
Characteristic
STYLE I:
°c
Symbol
R9JC
TL
Max
1.6
275
Purposes: liS" from Case for 5 Seconds
11) Pul •• Test: Puis. Width· 5 ms, Duty Cycl ... 10%.
Unit
DcIW
Dc
MILLIMETERS
11M MIN MAX
INCHES
MIN
MAX
39.37
- 1.550
21.0B
0.B3O
7.62 0.2 0 0.300
1.09 0.039 0.043
3.43
0.135
29.90 30.40 1.177 1.197
11.18 0.420 0.440
10.67
5.
5.59 0.210 0.220
16.64 17.15 0.655 0.675
11.18 12.19 0.440 0.490
n 3.64 4.09 0.151 0.161
R
26.67
- 1.050
Coltec:tor connectld to 1:_.
A
B
C
D
E
F
G
H
J
K
-
-
6.35
0.99
-
CASE 11-01
4-368
BU207, BU208
ELECTRICAL CHARACTERISTICS (TC = 250 unless otherwise noted.!
I
Charactoristic
Symbol
Min
Typ
Max
-
-
-
1.0
1.0
Unit
OFF CHARACTERISTICS (1 I
Collector·Emitter Sustaining Voltage
VCEO(sus)
(lC = 100 mAde, IS = 01
SU20B
SU207
600
700
Collector Cutoff Current
Vde
-
Vde
ICES
-
SU20B
SU207
(VCE = 1500 Vde, VSE = 0)
(VeE = 1300 Wdc, Vse = 01
Eminer Base Voltage
-
-
Vde
-
-
-
-
-
5
Vde
-
-
1.5
Vde
VESO
5.0
hFE
2.25
VCE(satl
VSE(satl
liE=10mA,lc=Ol
ON CHARACTERISTICS (II
DC Current Gain
(lC = 4.5 Adc, VCE = 5 Vdel
Collector-Emitter Saturation Voltage
(lC = 4.5 Adc,IS = 2
Ade)
Base Emitter Saturation Voltage
(lc = 4.5 Ade, IS = 2 Adc)
Second Breakdown Collector Current with Base
Forward Biased
ISlb
See Figure 14
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 0.1 Adc, VCE = 5.0 Vdc, f test = 1 MHz)
Output Capacitance
(V CS = 10 Vde, IE = 0, f = 0.1 MHz)
fT
-
4.0
Cob
-
125
-
MHz
pF
SWITCHING CHARACTERISTICS
Fall Time
(lc = 4.5 Ade, IS = I.S Ade,
LS = 10 I'H, see Figure 1)
(II Pulse Test: Pulse Width
= 300 I'S, Duty Cycle .. 2%.
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
+60V
Com
2 k/5 W
<:
820
5W
100/5W
.::...
100 V
15,750 Hz
Freq Adi
It!
100
1500
5W
L
·,OJjF
25 V
+
3
MA918
(Selected
1500VI
C
5W
10l'F
150 V
Pul •• Width Adj
60" Duty Cycle
-=
10 n
5W
Com .... 125 V
'c
L
C
A
mH
"F
3.5
0.87
0.013
4.5
0.67
0.017
DRIVER TRANSFORMER (Til
Motorola part numb.r 25D68782A-05·1/4" laminate "E" iron cor•.
Primary Inductance - 39 mHo Secondary Inductance - 0.22 mH,
Leakage Inductance with primary shorted - 2.0 JJH. Primary 260
turns, #28 AWG enamel wire, Secondary 17 turns, #22 AWG
ana mel wire.
4-369
BU207, BU208
BASE DRIVE: The Key to Performance
•
By now, the concept of controlling the shape of the
turn·off base current is widely accepted and applied in
horizontal deflection design. The problem stems from
the fact that good saturation of the output device, prior
to turn·off, must be assured. This is accomplished by
providing more than enough IBl to satisfy the lowest gain
output device hFE at the end of scan ICM. Worst·case
component variations and maximum high voltage loading
must also be taken into account.
If the base of the output transistor is driven by a very
low impedance source, the turn·off base current will reo
verse very quickly as shown in Figure 2. This results in
rapid, but only partial, collector turn·off, because excess
carriers become trapped in the high resistivity collector
and the transistor is still conductive. This is a high dissipa·
tion mode,since the collector voltage is rising very rapidly.
The problem is overcome by adding inductance to the
base circuit to slow the base current reversal as shown in
Figure 3, thus allowing excess carrier recombination in the
collector to occur while the base current is still flowing.
Choosing the right LB is usually done empirically, since
the equivalent circuit is complex, and since there are
several important variables (/CM' 'B1' and hFE at ICM).
One method is to plot fall time as a function of LB' at the
desired conditions, for several devices within the hFE
specification. A more informative method is to plot power
dissipation versus IBl for a range of values of LB as shown
in Figures 4 and 5. This shows the parameter that really
matters, dissipation, whether caused by switching or by
saturation. The negative slope of these curves at the left
(low IB1) is caused by saturation losses. The positive slope
portion at higher 'Bl' and low values of LB is due to
switching losses as described above. Note that for very low
LB a very narrow optimum is obtained. This occurs when
IBl hFE = ICM' and therefore would be acceptable only
for the "typical" device with constant ICM. As LB is in·
creased, the curves become broader and flatter above the
'B1 hFE = ICM point as the turn·off "tails" are brought
under control. _ Eventually, if LB is raised too far, the
dissipation all across the curve will rise, due to poor
initiation of switching rather than tailing. Plotting this
type of curve family for devices of different hFE' essen·
tially moves the curves to the left or right according to the
relation ISl hFE = constant. It then becomes obvious
that, for a specified ICM' an LB can be chosen which will
give low dissipation over a range of hFE and/or IB1' The
only remaining decision is to pick IBl high enough to
accommodate the lowest hFE -part specified. Figure 8
gives values recommended for LS and IBl for this device
over a wide range of ICM. These values were chosen from
a large number of curves like Figure 4 and Figure 5.
Neither LB nor IB 1 are absolutely critical, as can be seen
from the examples shown, and values of Figure 8 are pro·
vided for guidance only.
TEST CIRCUIT WAVEFORMS
FIGURE 2
FIGURE 3
(time)
(timo)
TEst CIRCUIT OPTIMIZATION
Tl\a test circuit may be used 1.0 evaluate davlcos In the con-
Once the required transistor operating current's determined,
fixed circuit vslue. may be selected from the tabla. Factorv tatting Is performed bV raadlng the current meter on IV • since the
Input power is proportional to current. No adjustment of the
test apparatus Is required.
ventlona' manner, 1.8., to measure fall tlma, storagv tlma, and
saturetlon voltage. However. this circuit was designed to evaluate
davlee, by a simple criterion, power supply input. Excessive
power Input can ba caused by a varietY of problems, but It Is the
dlltlpation In the transistor that II of fundamental itnpononca.
4-370
BU207, BU208
FIGURE 4 - OPTIMIZING DRIVE @ IC
= 3.5 A
FIGURE 5 - OPTIMIZING DRIVE
13
16
\\
1
\\\
\\\ ~
16
S~~B~""'- be
9
4r_
o
/'
LB .H
V
IC - 4.5 A
\
1\ \
5
l\
@
\~
-
\~
l\.
0-
\ l«.6
2-
~"
~
-
LB.H
12
/"
.L.
~
4
t-"
12
0.5
1.5
o
0.5
--
•
1.5
IBI. BASE CURRENT lAMP)
IBI. BASE CURRENT lAMP)
FIGURE 6 - SWITCHING BEHAVIOR vorsu.
TEMPERATURE
ICM = 3.5 A. IB.= 1.5 A. LB = 141'H
FIGURE 7 - SWITCHING BEHAVIOR vorsus
TEMPERATURE
ICM = 4.5A.IB= 1.75 A. LB a BI'H
I
,/
1.5
]
w
'"
;::
~
~
~
-
9.5
Is/
0.5
/'
/'
/'
~
~
;:
~
/
...
~
1.
~
'"
/
;::
~
~
I
:
o
o
100
120
BO
TC. CASE TEMPERATURE IOC)
40
60
140
20
,;::;K
-..........
..
~
r--.. ......
NOMINAL
Is7
15
r
1.5
'" :g
'"
~
-..... ,
liO""lillt:--
3
3.5
- --...
4.5
60
BO
100
120
6
140
160
t
9
i"'--..
-.....
W
LB
1
'"
~
>-
~
::
;;
B
r---.!O",'lill(_
I.
7
I'--. r-...
'"
Z ;::
<::
~
~
r---...
~
:
NOMINAL
6
5
It
0.5
4
3
o
o
40
FIGURE 9 - SWITCHING BEHAVIOR vorsus ICM
20
-
6.5
TC. CASE TEMPERATURE IOC)
FIGURE B - OPTIMUM DRIVE CONDITIONS
r--..
-
0
160
o
3
5
3.5
4.5
ICM. COLLECTOR CURRENT lAMP)
ICM. COLLECTOR CURRENT (AMP)
4-371
>-
...~
~
[
't
""
B
20
7
O.5 /
"7
~
o
:0
/
~
7.5
./
W
;;
8.5 ""
't
'y "
5
2
BU207, BU208
FIGURE 10 - THERMAL RESPONSE
2
•0 =
I
:0.5
.J!,
n
~~~
-0.
n
,..... V-
n
ro:
I- 1-1-
0."
.J ..
~
.J!,
I-'
f'
TJlpk) - TC = Plpk) ZOJCltl)
I " " III I
TT
'1/~2
( CYCLE
~NU~;~ APPROPRIATE 0 CURVE
n
•
-
.1
I." I
ReJC =1.60CIW Max
o CURVES APPLY FOR POWER
PU LSE TRAIN SHOWN
READ TIME At tl
~
f-
lI:!.
n
==
DO:
O. 01
.01
0,02
FOR ~OJC.(t),VALVE
IIII
I
.1
(.
{
5
10
50
lO
100
I
200
II
I{
t. TIME (mS)
FIGURE 11 - COLLECTOR SATURATION REGION
~
c
~
...
2.8
VCE = 5 V
i""
2.4
'"'"
!:;
c
>
ffi
!::
z
1. 61-' -\:'C=2A -
..,c
I-' ~3A
II
1
~
0.8
\
8
0.4
>
1\
\
\
~
7
u
5
o
\.
"-
f'...
10
\
0.5
I
i'-..
25°C
1'-
\.
i
,
1\
3
r-
0
0.3
TJ = 100°C
13
\
1\
\
;;:
...'"
4.5A
:+.5+A
~ '1.2
~
FIGURE 12'- DC CURRENT GAIN
20
I-' - -
2. 0
DOS 007 0.1
0.7
'B. BASE CURRENT (AMP)
0.2 0.3
0.5 0.7 1
'C. COLLECTOR CURRENT (AMP)
FIGURE 13 - "ON" VOLTAGES
/.4
1
1
/. 2
1
~
!:; 1
c
~
... O. 8
'"'"
!:;
o
>
>'
TJ'2S0~
~BEh.tI @le"8 = 2
o. 6
1...---
-
-l-
I--
O
0.05
Vf~(~'" @I~B
:1
0,1
0.2
f-
1
lo0'~..7 ~
O.4
o. 2
I--<~
./
......loo'C
......-Y'
25°C
1
0.3
0.5 0.1
1
'C. COLLECTOR CURRENT (AMP)
4-372
C-
BU207, BU208
FIGURE 14 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
10
5
......
I
2
Et-,I
_IC (MAX)
1
li:
::;;
1
~"'
......
......
ICM (MAX)
I......
~
r...
.......
" I......
"-
r-...
r'\
"
' ....
I,
...... ,
I'-
:5 0.5
UJ
a:
=>
~
o
t;
r-..
0.2
o. 1
~,
0.05
UJ
...J
B0.02
~-
TC ';;;95 0 C
BONDiNG WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
DirTY i:VCLE' ';;;1%
" '"
........
........
F
::
~ts 1=
~
~f-- r-
II-r--
5 f-- 101:::=
~ 0.0 1
BU207
I
BU 20S
0.005
I
I
0.002
1
f10
20'=
500_ r-
.........
0.001
rr-
50_= ~
100- f200- r-
I-
""a:
lJ~~
II
1=
r-
2
10
20
50
100
200
==
dc~ -
500
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-373
1000
2000
•
D40Cl
D40C2
D40C4
D40C5
DUOWATT
-NPN SILICON
DARLINGTON AMPLIFIER
TRANSISTORS·
NPNSILICON DARLINGTON
AMPLIFIER TRANSISTORS
•
· .. designed for amplifier and driver applications where high gain is
an essential requirement, low power lamp and relay drivers and power
drivers for high-current applications such as voltage regulators .
•
High DC Current Gain hFE =40,000 (Min) @ IC =200 mAdc - D40C2, 5
•
Collector-Emitter Breakdown Voltage BVCEO = 40 Vdc (Min) @ IC = 10 mAdc - D40C4, 5
•
Low Collector-Emitter Saturation Voltage V CE(sat) = 1_5 Vdc (Max) @ IC =500 mAdc
•
Duowatt Package 2 Watts Free Air Dissipation @ T A
Tab forming and TO-6 lead forming available on
special request.
=
250 C
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
-Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
D40Cl,2
VCEO
30
VCES
30
, VEBO
Collector Current - Continuous
Peak (1)
IC
I D40C4.5
40
Unit
'Vdc
40
Vdc
13
Vdc
0.5
1.0
Adc
Base Current - Continuous
18
100
mAde
Total Power Dissipation @TA - 25°C
Derate above 25°C (2)
Po
1.67
13.3
mW/oC
= 25°C
Po
6.25
50
mW/oC
TJ, T stg
-55 to +150
°c
-
260
°c
Total Power Dissipation@Tc
Derate above 2SoC
Operating and Storage Junction
Watts
Watts
Temperature Range
Solder Temperature, 1/16"' from Case
for 10 Seconds
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R9JA
75
°C/W
Thermal Resistance, Junction to Case
R9JC
20
uC/W
(1) Pulse Width.:; 25 ms. Duty Cycle':; 50%.
(2) The actual power dissipation capability of Duowatt transistors are 2 WilT A
= 25°C.
MILLIMETERS
DIM MIN MAX
A 21.84 22.35
8
9.91 10.41
4.39
4.65
C
0.58 0.74
0
3,56
4.06
F
2.67
2.41
G
H
1.70 '1.96
J
0.48 0.66
K 12.19 12.95
1.65
2.03
L
9.91 10.16
N
Q
3.81
3.56
1.
1.07
R
1.87
9.14
T
INCHES
MIN MAX
0.8&0 0.880
'~I
0.173
0.023
0.140
0.095
0.067
0.019
0.480
0.065
0,390
0.140
.
0.026
0.510
0.080
0.400
0.150
0.042
0.310
0.069
0.3&0
TO-202AC
CASE 306-04
4-374
D40C1,D40C2,D40C4,D40C5
I
'ELECTRICAL CHARACTERISTICS ITA = 2S o C unless otherwise notedJ
I
Characteristic
Svmbol
Min
Max
30
40
-
-
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage III
flc = 10 mAdc, VBE = 0)
Vdc
BVCEO
D40Cl,2
D40C4,S
Collector Cutoff Current
IVCB = Rated VCES, IE = 0, TJ = 150 0 C)
ICBO
-
20
I'Adc
Collector Cutoff Current
ICES
-
0.5
J..'Adc
(VCE = Rated VCES, VBE = 0)
Emitter Cutoff Current
IVEB = 13 Vdc, IC = 0)
ON CHARACTERISTICS III
lEBO
-
100
nAdc
10,000
40,000
60,000
-
VCEI,at!
-
1.5
Vdc
VBElsat!
-
2.0
Vdc
Ccb
-
10
pF
hIe
1.0
-
-
Current Gain
flc = 200 mAdc, VCE = 5.0 Vdc)
-
hFE
D40Cl,4
D40C2,5
Collector-Emitter Saturation Voltage
flc = 500 mAde, IB = 0.5 mAde)
Base-Emitter Saturation Voltage
flc = 500 mAdc, I B = 0.5 mAdc!
DYNAMIC CHARACTERISTICS
ColleC'itor Capacitance
IVCB = 10 Vdc, IE = 0, I = 1.0 MHz)
High Frequency Current Gam
flc = 20 rnA, VCE = 5 Vdc, I = 100 MHz!
Input Impedance
flC = 20 mA, vCE = 5 Vdc, f = 1 kHz!
50
h,e
-
Ohms
(1) Pulse Test. Pulse W,dth .. 300 I'S, Duty Cycle .. 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 1 - ACTIVE·REGION SAFE·OPERATING AREA
li:
~
iiia:
a:
:::.
...
a:
o
~
\OO~s
1
There are two limitations on the power handling ability of a
1m.
....
O.5
1',
de
u
- 0.05
0.02
0.5
I\..
·I'-.J
IIIII
'\.'
TJ = 150°C
Bonding Wire Limit
Thermal Limit, Singl. Pulse, TC =250 C
Second Breakdown limit
I
II II
1
7
W
~
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS!
average junction temperature and second breakdown.
Safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater diSSipation than the curves indicate.
The data of Figure 1 is based on T J(pk):= 1500 C; TC is variable
depending on conditions. Second breakdo,vn pulse limits are valid
lor duty cVcles to 10% provIded TJlpk)';; 1500 C. TJipk) mav be
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations Imposed by second breakdown.
"
Tc: 25°C
TA =25°C
0.2
8 o. 1
de
transistor:
50
4-375
•
D40Cl,D40C2,D40C4,D40C5
TYPICAL CHARACTERISTICS (continued)
. FIGURE 3 - "ON" VOLTAGES
FIGURE 2 - DC CURRENT GAIN
300 k
2.0
VCP 5.0V
200 k
100 k
~1.6
2
;( 70 k
I- 50 k
~ 30 k
~
~ 20 k
c
..I-H1"""
5~0 V
>
>1.0
10 k
7.0 k
5.0k
VCEhat) .1c!IB - 500
O.B
3.0 k
20
30
50
70
100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT (mA)
II II
0.6
20
2.0 k
30
FIGURE 4 - COLLECTOR SATURATION REGION
50
70
.....
.....-
VBE(on). VC~ •
~1.2
-55OC
'"'c
•
~1.4
250C
~
VBE("I).Ic!IIt·~
c
'"ffi
~
r-- Tl'2~0~
1.8
TJ -125 OC
-
l-
100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT (mA)
FIGURE 5 - TEMPERATURE COEFFICIENT
t{).5
en 2.4
TJ' 25 0C
!:;
c
>
II II
II II
~ ~.5
~2.0
~ -0.10
'"
*
;:;
c
;; 1.6
III
"Applin fo, IcllB c; hFE/2
'"'
~
!:;
250C to 1250C
.....
"Svc fo, VCE(saU
-0.15
~
8
;;;
200mA
~ 1.2
500mA
~ -0.30
~
....
IC'50mA
~
> 0.4
0.5
5.0
10 20
50 100 200
lB. BASE CURRENT ("AI
r-III""'"
-0.45
20
500 1.0k 2.0k 5.0k
~
svtl'iBf I
-550C to 25 0C
-0.35
~-O.40
II III
1.0 2.0
I II
25 0C to 1250C
g; -0.25
~
1LU1
~125Oc -
-0.20
w
1.0 A
~
~ 0.8
2.0k
II
30
50
70
III
I
IU
500 700 1.0 k
100
200 300
IC. COLLECTOR CURRENT (mA)
2.0k
FIGURE 6 - THERMAL RESPONSE
1.0
0.7
O' 0.5
0.5
~~
~;;;
.... '"
~~
~!;.
-
-
0.3 I~
0.2
0.1
-
I- ~5
0.1
",w
~ 0.01
:i
Single Pulse
:=.~ 0.05
~~ 0.03 lAo.
0.02
-
p
::i!i!i~
HlJl --
Single Pul.
o CURVES Al'PlY FOR POWER
-t~j
Duty Cyr:lo, 0 =t1/12
0.01
0.02
z,,JA(t) -r(1) R,,JA
RSJA - 750C.w M••
P(pk/
0.2
0.01
'..'I""
0.01
0.05
0.1
0.2
0.5
1.0
2.0
z,JC(1) - ,(I) "'JC
RSJC • 200C.w Ma.
5.0
10
20
t,TIMElm~
·4-376
50
100
200
50fI
1.Ok
2.Ok
PUlSE TRAIN SHOWN
READ TIME AT tl
TJlpl) -TC' '(pl) RtJC(1)
Uk 10k
20k
50k lf11k
D40C1,D40C2,D40C4,D40C5
TYPICAL CHARACTERISTICS
FIGURE 7 - CAPACITANCE
FIGURE 8 - HIGH-FREQUENCY CURRENT GAIN
20
0
TJ=25 DC
z
VCE-5.0V
TJ=25 DC
f= 100MHz
~7.0
>ffi
~10
~
w
..,
....... .....
z
~7_0
~~5.0
a
>
~
~ ~""
0.2
0.5
1.0
2.0
5.0
10
20
~2.0
'"
:;;
I.0
5.0
50
-,
-
~ 3. 0
.....
3_0
0.1
5.0
..,
Cib
..,-
2.0
0.05
•
(continued)
\
7.0
10
20
30
50
70
100
200
IC. COLLECTOR CURRENT (rnA)
VR. REVERSE VOLTAGE (VOLTS)
4-377
"
300
500
NPN
0400
PNP
0410
DUOWATT
COM~LEMENTARY SILICON ANNULAR.
AMPLIFIER TRANSISTORS
COMPLEMENTARY SILICON
AMPLIFIER TRANSISTORS
. . . designed for general·purpose, medium-voltage, medium power
amplifier and driver applications; series, shunt and switching regulators, and low and high frequency inverters and converters .
•
•
Duowatt Package - 2 Watts Free Air Dissipatio~ @ T A = 2S o C
Tab forming and TO-5 lead forming Bvallable on
special request.
Q../
:;!:
c
c
~
~
~
ON
Symbol
8 _-
g:-
Voltage
VCEO
30
45
Collector-Emitter Voltage
VCES
45
60
Emitter-Base Voltage
VEBO
IC
Collector Current
Continuous
Peak 11)
Base Current
Total Power Dissipation @TA == 2SoC
Derate above 25°C (2)
Total Power Dissipation @TC == 2SoC
Derate above 25°C
Operating and Storage Junction
c ....
c
~
Rating
Collector~Emitter
I
r,]!~!
~ ===t-ii
r:: 7V'
MAXIMUM RATINGS
~~60
75
~ ::O~
~g
Unit
75
Vdc
90
Vdc
5.0
...
Vdc
Adc
1.0
2.0
1 0 0 _ mAde
IB
1.67
13.3
PD
Watts
mW/oC
6.25
Watts
mW/oC
50
°c
TJ,Tstg _ _ -55 to + 1 5 0 _
PD
Temperatu re Range
Solder Temperature, 1/16" from Case
for 10 Seconds
°c
260
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
Max
Unit
ROJA
75
°CIW
ROJC
20
°CIW
(1) Pulse Test: Pulse Width.; 300 !,S.
(2) The actual power dissipation capability of Duowatt transistors are 2 W @ T A = 2SoC.
STYLE 1
PIN 1. EMITTER
b.
2. BASE
3.
COLLECTOR
4. COLLECTOR
.
Dj~~~G
\
4-378
L---
R
iN-R]
Lr--:f-1
f~-=tJ
MILLIMETERS
MAX
DIM MIN
A 21.84 22.35
9.91 10.41
B
4.39
4.65
C
0.14
0
0.58
4.06
F
3.56
G
2.41
2.67
H
1.70
1.96
J
0.48
0.66
K 12.19 12.95
165
2.03
L
9.91 10.16
N
Q
3.56
3.81
R
.8
9.14
T
INCHES
MIN
MAX
0.860 0.880
0.390 0.410
0.173 0.183
0.023 0.029
0.140 0.160
0.095 0.105
0.067 0.077
0.019 0.026
0.480 0.510
0.065 0.080
0.390 0400
0.140 0.150
O. 10
TO-202AC
CASE 306-04
·Annular Semiconductors Patented by Motorola Inc.
Kl
D40D,NPN,D41D,PNP
ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted.)
I
I
Charact.ristic
Min
Max
30
45
60
75
-
ICES
-
100
nAdc
lEBO
-
100
nAde
Symbol
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB
= 0)
Vde
BVCEO
04001,2/04101,2
040010410--4,5
040010410-7,B
0400/0410-10,11,13,14
Collector Cutoff Current
-
(V CE = Rated V CES)
Emitter Cutoff Current
(VEB = 5,0 Vdc)
ON CHARACTERISTICS (1)
DC Current Gain
-
hFE
(lc = 100 mAdc, VCE = 2.0 Vde)
0400/0410-1.4,7,10,13
040010410-2,5,B,ll,14
50
120
150
360
(lc = 1.0 Adc, VCE = 2.0 Vdc)
04001.4,5,7 ,B,l 0,11
04101.4,5,7,B,10,ll
0400/0410-2
10
10
20
-
-
0.5
1.0
1.0
Collector-Emitter Saturation Voltage
(lC = 500 mAde, I B = 50 mAde)
Vdc
VCE{;at)
0400/0410-1,2,4,5
0400,7,B,10,l1,13,14
04107,B,10,ll,13,14
-
1.5
Vde
75
375
MHz
0400 series
-
0410 series
-
12
18
Base-Emitter Saturation Voltage
•
-
VBE{sat)
(lC = 500 mAde, I B = 50 mAde)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
IT
(lc = 20 mA, VCE= 10 Vde, I = 20 MHz)
Collector-Base Capacitance
pF
Ceb
(VCB = 20 Vde, IE = 0, 1=1 MHz)
(1) Pulse Test: Pulse W,dth .. 300 ps, Outy Cycle .. 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 2 - CAPACITANCES
FIGURE 1 - CURRENT·GAIN-BANDWIOTH PROOUCT
vJs! ...-
0
TJ=25 0 C
0
V
~
V
bJob
llL
V
V .... D~\dsUes
0
200
............
........
---0410 series
- - 0400 series
10 0 - 0
0
........
""
TJ - 25 0 C
C,b
-
0
Or- i-r-.
~
~'b"
0
0
7
5r-- r- Applies for Rated Vceo
0
3
2
0.1
10
20
30
50
70
100
200
300
500
lC, COLLECTOR CURRENT ImA)
4-379
II IIII
0.2
0.5
,
I
10
20
VR, REVERSE VOLTAGE IVOLTS)
50
100
0400, NPN, 0410,PNP
TYPICAL CHARACTERISTICS (continued)
0400 series
400
.
'"
~'"
[;
'-'
o
300
T]~ doc'
y~
...-
z 200
100
80
0
~ oV
TJ"'250C
--
10 0
~
n_~5oJ
--...-
0410 series
FIGURE 3 - DC CURRENT GAIN
r--......
15lc
~
~
0
J~~. i,ov
:--.,f\
I-~550C
01-0
VCP 1,0V
•
20
1,0
1.0
5,0
10
10
50
100
IC. COLLECTOR CURRENT ImA)
500
100
30
I,D k
I,D
5,0
10
10
50
10
100
200
500 1000
lC. COLLECTOR CURRENT ImA)
FIGURE 4 - "ON" VOLTAGE
1.0
111'TP15~C
I'
~
~
w
.
--
JJJ!..u Ii' Itlal. !o
0,8
0
1,0
I
0,6
r--
VaElonl @
V~E J",1 V
...-
..
e:
0
-
-
VBElon) Ii' VCE ·1.0 V
w
0,4
I
0,1
1,0
5,0
>
>'
0.4
0,2
-
VCElsall1i' IclIs· 10
1.0
0.6
...-
i:--
'"l-
>
>'
o
II 1111
II IIII
VBElsatl I!IICIIB • 10
~
2.
'"
:;
Tp150C
O,a
o
10
20
50
100
100
IC. COLLECTOR CURRENT ImAI
500
I-- VCElsatl Ii' Ic/IB' 10
1.0
1.0 k
5,0
1,0
10
~
10
50
100
IC. COLLECTOR CURRENT ImA)
100
'500 1.0 k
FIGURE 5 - COLLECTOR SATURATION REGION
0
1
~
T\ 15'oJ
1.0
'I
Tp 250C
o
~ o.8
8
~
~ O.6
6
'"w
250mA 50e rnA
IC'IOmA SOmA
1.0 A
1=
! o.
4
"1.0 A
~Tlml ~ii
III TtiHm:
0
0.05 0,1 0,2
0,5 1.0
2
~ i'H+t
mUl T111
2,0
5,0 10 20
lB. BASE CURRENT ImA)
50
4
o
~= 0,2
8
o
100 200
0,05 0,1
500
I-0,2
0,5 1.0
2,0
5,0
10
10
IS. BASE CURRENT ImA)
4-380
50 100 200
500
D40D, NPN, D41D,PNP
TYPICAL CHARACTERISTICS (continued)
FIGURE 6 - THERMAL RESPONSE
10
07
05
cia
~~ 03
~~
0.2
~~
w~
0.1
in",
o
~
05
~
Single Pulse
~.~ 0.05
003
-
-:::::
01
~~ 007
-=Ci;
'::"~
~;;;
~ to.O;'
-
i"'"
l-
r- 1
Stngle Pulse
-t;j
0.01
,;-
I
001
0.01
- lOJA{I} rll} ROJA
ROJA = 75 0 CNJ Max
-
0
pEfUl
...... 002
002
- - ZOJC(tl s r(ll ROJC
ROJC ~ 20o C/W Max
o CURVES APPL Y fOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ{p'}' TC ~ p(p'} ROJC{I}
Duty Cycle, 0 '" 11112
002
005
01
05
01
10
20
50
10
10
I, TIME lms)
50
100
100
500
10.
10.
5.0' 10.
50. 100.
10.
FIGURE 7 - ACTlVE·REG10N SAFE·OPERATING AREA
0400 series
2.0
1
....
~
=>
~
~
o
'"~
0410 series '
•
2k
l',
700
....
500
30 0
TC = 25 0 C
TA=25 0 C
200
20
1.0
500
de,
...
II
100
0
. . . .....IOU-
1k
70 0
0
0
1'.
100 $AS
~1.0ms
1.0 k
\
de .... ,
10
20
30
TA = 25 0 C
I
DEE
(Applies Below Raled VCEO)
S.O 7.0
200
50
70
TJ=150.lC
100
VCE, COllECTOR·EMITTER VOLTAGE {VOLTS}
~ "'"'-
'"
"
Thermal Deratmg"""'-
i'"
Second Breakdown Derating
---
I--.
'"I"
O.4
'"
~
I"-
"-
f o. 2
~
I"-...
0
20
30
50
70
100
for duty cycles to 10% provided TJ(pkl'" 150o C. TJ(pk) may be
'"'"'- I"'"-
~
'"
~
ffi
I'\.
.~,
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
FIGURE 8 - POWER DERATING
~
: o.6
'"
z
..
The data of Figure 7 is based on TJ(pk)::: 150°C; TC IS variable
depending on conditions. Second breakdown pulse limits are valid
There are two limitations on the power handling ability of a
ll! o. 8
1.0 rus
VCE. COLLECTOR·EMITTER VOLTAGE {VOLTS}
transistor: average junction temperature and second breakdown.
Safe operatil19 area curves indicate le,VeE limits_of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
1. 0
II
TC = 25 0 C '
7O~.!=-BondingvJire limit
50 - - -Thermal limit, Single Pulse, TC '" 250 C
- - - Second Breakdown limit
30
(Applies Below Rated VCECI
10
2.0
3.0
20
1.0
5.0 7.0 10
-
3.0
de
10
Tr 150 0 C
- BONDING WIRE LIMIT
THERMAL LIMIT. SINGLE PULSE
- - - SECOND BREAKDOWN LIMIT
2.0
de
300
40
60
80
100
TC. CASE TEMPERATURE (DC)
4-381
120
140
160
•
NPN
PNP
040El 041El
040E5 041E5
040E7 041E7
DUOWATT
COMPLEMENTARY SILICON ANNULAR.
.
AMPLIFIER TRANSISTORS
•
COMPLEMENTARY SILICON
AMPLIFIER TRANSISTORS
... designed for general·purpose, medium·voltage, medium power
amplifier and driver applications; series, shunt and switching regu·
lators, and low and high frequency inverters and converters .
• Duowatt Package - 2 Watts Free Air Dissipation @TA= 250 C
Tab forming and TO-5 lead forming available on
Ipeclal reque.t.
I
f==bo/'
a..../'
hll
MAXIMUM RATINGS
Rating
Collector·Emitter Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Continuous
Peak III
Base Current
Total Power Dissipation @I TA :: 2SoC
Derate above 2SoC (21
Total Power Dissipation @TC - 2S o C
Derate above 2SoC
Operating and Storage Junction
Unit
Symbol D4OI41ElID40/41E5ID40/41E7
Vde
30 I 60
VCEO
I 80
Vdc
40 I 70
VCES
I 90
,
Vdc
5.0
VEBO
2
Adc
IC
3
mAde
0.5
IB
Watts
1.67Po
1 3 . 3 - mW/oC
Watts
Po
8
mW/oC
64
°c
TJ,T stg - 5 5 t o + 1 5 0 -
-
STYLE 1.
PIN 1 EMITTER
2 BASE
3. COLLECTOR
'''[-l ~
4. COLLECTOR oj~
~
rN-hl
I--G
R
Lr--:i..J
t::::::::=r·=c
!
Temperature Range
260-
Solder Temperature, 1/16" from Case
°c
for 10 Seconds
DIM
THERMAL CHARACTERISTICS
Max
I
I
75
I
I
15.6
I
I
Symbol
I
Thermal Resistance, Junction to Ambient
I
Thermal Aesistance. Junction to Case
I
R8JA
R8JC
. Characteristic
NOTES
Unit
°c/w
°CIYI
1. Pulse Test: Pulse Width .. 300 "S.
2. The actual power dissipation capability of Duowatt transistors are 2 W
TA = 25°C.
@
A
8
C
D
F
G
MILLIMETERS
MIN
MAX
21.84
9.91
4.39
0.58
3.56
2.41
22.35
10.41
4.65
0.74
4.06
2.67
H
1.70
1.96
J
0.48
12.19
1.65
9.91
3.56
1.07
7.87
0.66
12.95
2.03
10.16
3:81
1. 5
9.14
K
L
N
Q
R
T
INCHES
MIN
MAX
0.860
0.390
0.173
0.023
0.140
0.095
0.067
0.019
0.480
0.065
0.390
0.140
0.042
0.310
TO-202AC
CASE 306.04
4-382
0.880
0.410
0.183
0.029
0.160
0.105
0.077
0.026
0.510
0.080
0.400
0.150
0.069
0.360
NPN D40E1, D40E5, D40E7
PNP D41E1, D41E5, D41E7
I
ELECTRICAL CHARACTERISTICS (TA = 2S o C unless otherwi ... noted.)
Charact8liltic
OFF CHARACTERISTICS
Collector· Emitter Breakdown Voltage
IIC = 10 mAde, IB a 0)
I
Max
Min
Symbol
BVCEO
D4o"EI/D41 EI
D40ES/D41 ES
D40E7/D4IE7
-
-
lEBO
-
ICES
hFE
100
nAde
100
nAde
-
-
50
10
B•••·Emitter Saturation Voltage
IIC = 1.0 Ade,lB = 100 mAdc)
Vdc
-
30
60
60
Emitter Cutoff Current
(VEB ~ S.O Vde, IC ~ 0)
Collector Cutoff Current
(VCE ~ R.ted VCES)
ON CHARACTERISTICS 11/
DC Current G.in
IIC = 100 mAde, VCE = 2.0 Vdc)
IIC = 1.0 Ade, VCE = 2.0 Vdc)
Collector-Emitter saturation Voltage
IIC a 1.0 Ade, IB = 100 mAde)
Unit
-
veE (sa"
-
1.0
Vdc
VBE(.at)
-
1.3
Vde
'T
75
375
MHz
Ccb
-
12
18
pF
DVNAMIC CHARACTERISTICS
Current Gain -Bandwidth Product
IIC = 20 mA, VCE = 10 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB - 20Vdc, IE = 0, f
=I
D40E series
D41E series
MHz)
(1) Pul •• Te.t: Pul.e Width" 300 jI', Duty Cycl. " 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 2 - CAPACITANCES
FIGURE 1 - CURRENT GAIN-BANDWIDTH PRODUCT
00
Uo~~rilS
vJJ
0
TJ"25DC ..... 1--" ....
./
00
I"
/
200
1---" ....
till
JIJ~!i.
70
..........
........
100
70
........
50 70 100
30
Ie. COLLECTOR CURRENT (mA)
20
'"
200
300
---04IE ..."
-D40ESlrias
I
TJ =25DC
C.b
-NI
0_
0
7
5-
50
10
--
3
2
0.1
500
4-383
_1
-r--
-
0.2
~Cb,
Applies for Ratad Vcao
II IIII
0.5
I
I>
-
10
20
VR. REVERSE VOLTAGE (VOLTSI
50
100
NPN D40E1, D40E5, D40E7
PNP D41E1, D41E5" D41E7
TYPICAL CHARACTE.RISTICS (continued)
D41E series
D40E series
FIGURE 3 - DC CURRENT GAIN
400
z 200
'"ffi>~
•
13
100
a0
o
60
u
~
40
'~
1--1--'"
;;:
I--
20
1.0
2.0
200
'">-z
~
r....:
~ 100
'"u:>
10
20
50
100
lC. COLLECTOR CURRENT ImAI
500
200
r-.....
--
25lc
;;:
Ji~· to V
50
TJ·1250C
z
~
ntoJ
I--'"
V
300
g
70
~
50
-
30
1.0
10k
1'--.'
i--'
-55°C
VCE'I.0V
5.0
2.0
10
50
20
100
200
500 1000
IC. COLLECTOR CURRENT ImAI
FIGURE 4 - "ON" VOLTAGE
1.0
o. a
mL'I@ ILa
~
~ 0.6
. w
1.0
II IITJ" 25bC I
VBElonl @JE
I--
l, 110
:;...
~
~
J1
~ O.6
1 V
>
>'
1111
1---1--'
~
.....
VBElon)@VCE = 5.0
w
;:'"
c5
0.4
>
,;
I
O.4
o. 2
0.2
,.,-'
o
II
11 1111
VBElsa'l@ Iclla ' 10
o.B
'"<
~
TJ: 25 0 c
1.0
-
VCElsa'I@ICIIB· 10
2.0
5.0
10
20
50
100
200
IC. COLLECTOR CURRENT ImAI
500
1.0
1.0 k
5.0
2.0
'"
.......
VCElsa,l@ ICIIB ' 10
o
10
20
50
100
IC. COLtECTOR CURRENT ImA)
200
500 1.0 k
FIGURE 5 - COLLECTOR SATURATION REGION
~
1.
0
T~ 12510J
o
>
~o
I.0
~
O.a
;; O.6
g
O.6
~
'"
~ O. B
'"
~
o
'"
~
~
~
:i
O. 4
\
o
g_ o.
8
~
>
2
~' iorA(~ill
IIIIH
0
0.05 O. I 0.2
~
0.5
rHmA
~
:;
1.0 A
1.0 2.0
5.0 10
lB. BASE CURRENT ImAI
III
250mA 500mA
1.0A
o.4
o
8
"'
~
100 200
IIIII
IC'10mA 50 rnA
~ o.2
::
~
111150
20
TJc 2.5OC
500
0
0.05 0.1
...
0.2
0.5 1.0 2.0
5.0
10
20
lB. BASE CURRENT ImA)
4-384
,
50 1l1li 200
5l1li
NPN D40E 1, D40E5, D40E7
PNP D41E1, D41E5, D41E7
TYPICAL CHARACTERISTICS (continued)
FIGURE 6 - THERMAL RESPONSE
1.0
O.
o.~
0 =0.5
~iii
I~ 0.3 I-
.....
oj
~
~iiI
~: 0.2
~g;
~=
O.
~~ 0.07
~.~ 0.05
-I"
-
0.1
~ 0.D5
I
SingllPulse
ZsJCltl =rltl RUC
ROJe =15.6 oCNI Max
pEfUl
Single Pulse
-:::Uj
1:':0.03 "" 0.02
0.01
O.oZ
- ZUAI'I = rill RBJA
ROJA =750CNI Max
o Curves Apply for Power
Pulse Train Shown
Read Tim'e at t 1
TJlpkl -TC = Plpkl RBJCItI
Duty Cycle. 0 11/12
-t~J=
.f'"
I
0.01
-
0.01 0.02
0.05
0.1
1.0
0.5
0.2
2.0
5.0
10
20
50
100
200
500
1.0k
Z.Ok
5.0k 10k
ZOk
50k lOOk
t. TIME ems)
FIGURE 7 - ACTIVE· REGION SAFE· OPERATING AREA
D40E series
D41E series
1m,
~
~
....
1
de
TC = 25°C
~ 0.5
=0.3
'"'"
~
0.1
j
0.05
t;
1=
~O.O
o
21=
0.0 1~
de
T,\ = 250C
,'j II
-
p.... ..100~s
"
~
"...
~
~
I"
i:l
....
3
2
1 m,
I'
de
I
de ..... t:':r-:-Tc 725°C
TA=25OC
o. 5
O. 2
t:s:100 ",
~
~ O. I
t;
TJ - 25°C
TJ = 25°C
Bonding Wire Limit
Thermal
Limit. Single Pulse
~O.O 2~
---Second Breakdown limit
0.0
(Applies Below Rated VCEol
I~F
~ 0.05 r o
r-
Bonding Wire Limit
- - - -Thermal Limit, Single Pulse
---Second Breakdown Limit
IAppl; .. Below Raled VCEOI
10
20
50
VCE. COLLECTOR·EMITIER VOLTAGE IVOLTSI
70
10
20
50
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS
100
There are two limitations on the power handling ability of a
1--
'"""
~
~ O.8
""o
; O.6
"-
--
t-:.
--
Second Breakdown Denlting
Thermal Derating ' "
~
to
r-...
Z
~
ffi o.4
"'-
o
'"
~
Ii! o.2
40
60
80
-
.....
FIGURE 8 - POWER DERATING
""
~
0
20
70
100
The data of Figure 7 is based on T J(pkl =< 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJlpkl"'1500C. TJlpkl may be
calculated from the data in Figure 6. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be ObseNed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
I. 0
-
100
120
TC. CASE TEMPERATURE lOCI
4-385
""'-
140
160
NPN
040K
PNP
041K
DUOWATT
COMPLEMENTARY SILICON DARLINGTON
AMPLIFIER TRANSISTORS
•
· .. designed for amplifier and driver applications where high gain is
an essential requirement, low power lamp and relay drivers and
power drivers for high·current applications such as voltage regulators .
•
COMPLEMENTARY SILICON
DARLINGTON AMPLIFIER
TRANSISTORS
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 1.5 Adc for D40,41K1,2
• Duowatt Package 2 Watts Free Air Dissipation @ T A =25 0 C
Tab forming and TO·! lead forminG avanable
on special request.
r
I
F
o~
MAXIMUM RATINGS'
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCEO
VCES
VEBO
IC
D40/41K
1,3
D40/41K
2,4
30
30
50
50
13
2.0
3.0
100
1.67
13.3
Peak 11)
Base Current - Continuous
Total Power Dissipation @TA :: 2SoC
Derate above 25°C (2)
Total Power Dissipation @ T C = 2SoC
Derate above 2SoC
Operating and Storage Junction
Temperature Range
Solder Temperature, 1/16" from Case
for 10 Seconds
Unit
Vdc
Vde
Vdc
Adc
'B
Po
Po
mAde
Watts
mW/oC
Watts
mW/oC
TJ, T stg
10
80
-55 to +150
-
260
°c
I
I
I
Symbol
R6JA
R6JC
I
I
I
Max
75
12.5
7P-'
1
l,·Mi
OJ-j;J
~C
~---~~
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Aesistance, Junction to Case
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
4. COLLECTOR
B,
I
I
I
1. Pulse Width .. 25 ms, Duty Cycle .. 50%.
2. Th'e actual power dissipation capability of Duowatt transistors are 2 W@TA
Unit
°C/W
uc/w
= 25°C.
MILLIMETERS
DIM MIN MAX
A 21.11C 22.35
9.91 10.41
B
C
4.39 4.65
0.58 0.74
0
F
3.56 4.06
2.41
2.67
G
H
1.70 1.96
J
0.48 0.66
K
12.19 12.95
L
1.65 2.03
N
9.91 10.16
Q
3.81
3.56
1.07
1.
R
7.87
9.14
T
INCHES
MIN MAX
0.860 0.880
0.390 D.410
0.173 0.183
0.023 0.029
0.140 0.160
0.095 0.105
0.067 0.077
0.019 0.026
0.480 0.510
0.065 0.080
0.390 D.400
0.140 0.150
0.04
0.069
0.310 I U.38l1
To-202AC
CASE 306-cM
4-386
NPN D40K, PND D41 K
ELECTRICAL CHARACTERISTICS (TA ~ 250 C unle.. otherwise noted.)
I
I
Ch.nocteristic
Symbol
Min
Max
Unit
BVCEO
30
50
-
Vdc
ICBO
-
20
/lAdc
ICES
-
0.5
/lAdc
lEBO
-
100
nAdc
OFF CHARACTERISTICS
Coliector·Emitter Broakdown Voltalie (1)
D40,41KI,3
!lC= !OmAdc}
D4D,41K2,4
Collector Cutoff Current
(VCB = Rated VCES,I!! = 0, TJ = 150°C)
Collector Cutoff Current
(VCE = Rated VCES, VBE = O)
Emitter Cutoff Current
(VEB = 13 Vdc, IC = O)
ON CHARACTERISTICS (I)
DC Current Gain
(lC = 200 mAde, VCE = 5.0 Vde)
!lC = 1.5 Adc,VCE = 5.0 Vdc)
(lC = 1.0 Adc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 1.5 Adc, 16 = 3.0 mAde)
!lC = 1.0 Adc, 16 = 2.0 mAl
hFE
All Devices
D40,41KI,2
D40.4IK3,4
Vde
VCElsatl
D40.4IKI.2
040,41 K3.4
Base-Emitter Saturation Voltage
(lC = 1.5 Adc, 16 = 3.0 mAdc)
(lC = 1.0 Adc, 16 = 2.0 mAde)
•
-
-
10,000
1,000
1,000
-
1.5
1.5
-
2.5
2.5
Vde
V6E(satl
D40,41Kl,2
D40,41K3.4
-
DYNAMIC CHARACTERISTICS
Collector Capacitenco
(VC6 = 10 Vdc, IE = 0, f = 1.0 MHz)
040K series
D41K series
High Frequency Current Gain
(lC
= 20.
mA, VCE
= 5 Vdc, I = 100 MHz)
Ccb
-
10
25
pF
Ihle l
1.0
-
-
I. Pulse Test: Pulse Width'; 300 I'S, Duty Cycle'; 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 1 - DC SAFE OPERATING AREA
FIGURE 2 - POWER DERATING
TA TC
1r-rT11r--r--r--,--,
2.0 10
3.0 r-r--rrr-rr----r---.----r--.--T'"T'"
2.01-11-++-1++-+--+-+--+-+-'1-++++--+-1--+-1
I Tt-l.
0:-
1 sec
~a: 1.0~1F.~;mdc~lm~
~ 0.1
D.S
Te" 250C
de
......
0
~ 0.3 f-H+H-I-T
..!A:...',2_S.,C_-+--'1'-.d-++t-tl_+-t_+-f
~ 0.2 H+++I+---+-!_+++I....~I+l+--+--+-+--l
j
~
O.l~~I;I~m!~m!!m;I~~i~~~
~0.07
"""'r-...r-.... '"
~
1=
~
z
1.6
~ 1.2
<1:
T0 .~
6
"" "'' ' '
iii
~ 0.8
~
4
'~
~
,pO.4
-~
B 0.05
o
o
0.03 L...JL...J...L..I...LL_-'--1-_J--l--,-,~.u..L---L--'_-:':--:'
0.40.5 0.7 1.0
2.0 3.0
5.0 7.0 10
30 40
VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)
4-387
20
40
60
80
100
T, TEMPERATURE (DC)
"
120
~
140
160
NPN D40K, PND D41K
TYPICAL CHARACTERISTICS (continued)
DC CURRENT GAIN
FIGURE 3 - CD40K .ries)
FIGURE 4 - CD41K _ies)
300 k
200 k
.
z
100 k
zlOO k
~ 70 k
§ 50
25°C
~ 30 k
~ 20 k
"""
10 k
7.0 k
5.0 k
~
TJ -125°C
k
'" 3D k
~
c
•
JC~~5V t--
200 k
TJ -125°C
C 70 k
I- 50 k
z
~
300 k
VCE =S.OV
'"~
"
-55°C
c
2SoC
20 k
......
-5SoC
w
~ 10 k
~
7.0 k
5.0 k
3.0 k
20
50
3D
70
100
200 300
500 700 1.0 k
IC.COLLECTOR CURRENT ImA)
3.0 k
ZO
Z.Ok
3D
50
70 100
ZOO 300
500 700
IC. COLLECTOR CURRENT ImAI
1.0 k
2.ok
"ON" VOLTAGES
FIGURE 5 - CD40K _ies)
2.0
I.a
r--
FIGURE 6 - CD41K .rilS)
./
TJ =2SoC
1./
~
j~l!lcJlr~
4
11 Jl 1
O. a
lJlll
50
3D
70
/
!;
V
>- 1.0
....lI
.a
I
~
VBE I!IVCE - 5.0 V
2-
~ 1.
V
VCEI ..I) I!lclla - 500
I J..--t"" -1 i-'
..J...-1"': I •
I--"T
w
:.i!
/
VaElon) @ VC~ • 5.0 V
0
V~EC~llflll~IB =L500
1.6
o
;::. 1.4
~~
2
V
./
1.Bt-- t- TJ = 2SoC
V
6
O.6
20
2.0
100
ZOO 300
500 700 .1.0 k
IC. COLLECTOR CURRENT ImA)
2.0k
O.6
20
VCECallfllIC'IB' 500
50
3D
70 100
200 3D0
SOO 700
IC. COLLECTOR CURRENT ImAI
1.0 k
Uk
FIGURE 7 - THERMAL RESPONSE
1.0
O.
~ 0 =0.5
O.
~6
~; D.3t- 0.2
~~ O.2
1-"'
1-'"
~~ o. I ~
i~ 0.0 I
0.02
b:::::1iii
Single Pulse
-
-
0.1
0.05
a::i 0.0S
>-:10
~~O.O3""
...
~
:EnJl --tl-j
Singl,Pul1e
lIMld - rid R'M
R,JA • 750 CJW MIx
PlpIll
0.02
0.01
DCURVESAPPLYFORPOWER
PULSETRAIIISHIMN
READ TillE AT II
TJlpkI-TC - PCpkliltJCCtI
Duty Cycle. D• IIh2
.,..
II
12
I
0.0 I
0.01 0.02
ZVCCtl" .Cd iltJC
R8JC = 12.SoCJW MI.
O.OS
0.1
0.2
0.5
1.0
2.0
5.0
10
ZO
50
I. TillE CmrI
.+.388
100
200
500
Uk
Uk
Uk 10k
IIIk
50k lilli
NPN D40K, PND D41K
TYPICAL CHARACTERISTICS (continued)
CAPACITANCE
FIGURE 9 - (D41K seriesl
FIGURE B - (D40K sari..)
zo
-
40
TJ =25°C
-
~10
w
'"z
~7.0
U
~
:s 5.0
3D
~
oS
r-..'
20
III
r--.
C,b
~~
Cob
.'"
w
z
!:
C.b
.......
~
u
'"~
:'i
~
TJ =25°C
III
....,
10
",'
7.0
3.0
5.0
2.0
D.D5
0.1
0.5
0.2
1.0
2.0
5.0
10
20
50
0.05
0.1
0.2
VR. REVERSE VOLTAGE (VOLTSI
0.5
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTSI
20
50
HIGH FREQUENCY CURRENT GAIN
FIGURE 11 - (D41K series)
FIGURE 10 - (D40K sariesl
10
z
;;:
co
5.0
ffia:
a:
B
2.0
10
z
-
......
VCE =5.0 Vd;-- I-....
TJ =25°C
f= 100 MHz
~
is
=>
fil
ff
~ 5.0
1.0
§
a
i',
~
0.5
'"
;;:
\
0.2
0.02
0.03
0.05
2. 0
ffi
1.0
ffi
::E
0.5
--=
'"
o. 1
0.01
===
~
'"co
;;:
co
i
:::::::=VCE =5.0 Vd,
TJ=250C
f -100 MHz
0.1
0.2
0.3
0.5
01
o. 1
0.01
1.0
IC. COLLECTOR CURRENT (AMP)
0.02
0.05
0.1
0.2
IC. COLLECTOR CURRENT(AMPI
4-389
0.5
1.0
•
D40N3
D40N4
D40Nl
D40N2
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS
DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS
· .. designed for high·voltage TV video arid chroma output circuits,
high·voltage linear amplifiers, and high·voltage transistor regulators.
• High Collector· Emitter Breakdown Voltage BVCE R = 300 Vdc (Min) @ IC = 1.0 mAdc - D40N3, 4
•
Low Collector·Base Capacitance Ccb = 3.0 pF (Maxi @ VCB = 20 Vdc
• Duowatt Package 2 Watts Fr,ee Air Dissipation
@
TA = 250 C
Tab form,!ng and TO·5 lead forming available on
special request.
A
Symbol
D40Nl,
Collector·Emitter Voltage (1, 2)
VCER
250
Collector-Base Voltage
Emitter-Base Voltage
VCSO
VESO
IC
250
Rating
Collector Current - Continuous
Operating and Storage Junction
Temperature Range
SolderTemperature.l/1S'· from Case
for 10 Seconds
21
D40N3,4
T
T
300
Vde
Vde
Vde
0.1
0.7
Ade
IS
250
mAde'
Po
1.67 (31
13.3
Watts
mWf'C
Po
6.25
50
Watts
mW/oC
TJ, T stg
-55 to +150
°c
-
260
°c
THERMAL CHARACTERISTICS
Symbol
Ma.
Unit
Thermal Resistance. Junction to Ambient
ROJA
75
°C/W
Thermal Resistance. Junction to Case
RUJC
20
°CIW
Characteristic
(II IC = 1.0 mAde, RSE = 10 kl1.
(21 Pulse Test: Pulse Width ~ 300 JlS, Dutv Cycle <; 2%.
(31 The actual power dissipation capability of Duowatt transistors are 2 W @ T A~ = 2SoC.
\
b
Unit
300
5.0
- Peak
Base Current
Total Power Dissipation @TA - 2SoC
Derate above 25°C
Total PQwer Dissipation @TC '" 2So C
Derate above 2SoC
I
--+ t
a
MAXIMUM RATINGS
nYUI
~.
H
,.
PIN I EMITTER
2 BASE
3 COLLECTOR
4. COLLECTOR
I
0-+
--l
r- N
K
-t-"
-G
1
C
Lr--~t:r4
r~~JJ
MILLIMETERS
MAX
DIM MIN
A 21.84 22.35
9.91 10.41
B
4.39
4.65
C
074
0.58
0
406
f
356
2.41
2.67
G
~. 1.96
0.48 06s
J
12.19 1295
K
1.65
2.03
L
991 10.16
N
Q
381
3.56
1.75
1.07
R
7.87
9.14
T
f-'!..
- INCHES
MIN MAX
0.860 0.880
0390 0.410
0.113 0.183
0023 0029
0140 0160
0095 0105
0061 00))
0019 0.026
0.480 0510
0065 0080
0390 0400
0140 0.150
0.042 0.069
0.310 0.360
TO·202AC
CAse 306.()4
4:-390
1
D40N1,D40N2,D40N3,D40N4
ELECTRICAL CHARACTERISTICS (TA
I
=25 0 C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
250
300
-
-
10
10
-
10
20
30
30
60
20
30
-
90
180
50
-
MHz
3.0
pF
Unit
OFF CHARACTERISTICS
Collector·Emitter Breakdown Voltage (1)
(lC = 1.0 mAde, IB = 0, RBE = 10 knl
Collector Cutoff Curront
, (VCB = 250 Vde, IE = 01
(VCB = 300 Vde, IE = 01
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 01
ON CHARACTERISTICS III
D
20 mAde, VCE
(lC· 40 mAde, VeE
D40N1,2
D40N3,4
lEBO
I'Ade
10 Vdcl
!lAde
-
hFE
D40N1,3
D40N2,4
D40N1,3
D40N2,4
D40N1,3
D40N2,4
= 10 Vdel
D
-
ICBO
DC Current Gain
(lC = 4.0 mAde, VCE = 10 Vdcl
(lC
Vde
BVCER
D40N1,2
D40N3,4
-
DYNAMIC CHARACTERISTICS
Current·Galn - Bandwidth Product
(lC = 20 mAde, VCE = 10 Vde, I - 20 MHzl
IT
Collector· Base Capacitance
(VCB = 20 Vde, Ie = 0, I = 1.0 MHzl
Ccb
(11 Pulse Test: Pul ... Width .. 300 1", Duty Cycle .. 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA
0
..
..
05 0
if
. ],,,100 "'
~ 0.20
~
§
01 0
de
005
de
TA =25 D C: ~tJc
"
=25 0C":"'t-
~
I'N
~ 0.02
I f---t- TJ =150 C
}.o
BONOING WIRE LIMIT
u 0.005 - - - THERMAL LIMIT. SINGLE PULSE. TC =250C
SECONO BREAKOOWN LIMIT
~
040Nl.2:-1"'
0.00 2
3• 4
0.00 1
1.0
2.0
50
10
20
50
100
200
g
10ms
50~s
....
1-..::::::::
---
There are two limitations on the power handling ability of a
transistor' average Junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater diSSipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150o C; TC is variable
depending on conditions. Second breakdovvn pulse limits are valid
for duty cycles to 10% provided TJ(pkl ~ 150°C. TJ(pk) may be
calculated from the data in Figure 6. At high case temperatures,
thermal limitations Will reduce the power that can be handled to
values less than the limitatIOns Imposed by second breakdown.
r?m
500 10k
VCE. COLLECTOR·EMITTER VOLT AGE IVOl TS)
Circuit dmgrclms external to or containing Motorola products are Included as a means of Illustration only Complete information
suffiCient for construction purposes may not be fully illustrated Although the Information herein has been carefully checked and IS belIeved
to be reliable. Motorola assumes no responsibility for InaccuraCies Information hereIn does not convey to the purchaser any license under
the patent rights of Motorola or others
The Information contained herein IS for gUidance only. with no warranty of any tYpe, expressed or Implied. Motorola reserves the r'lght
to make any changes to the information and the product(s) to which the Information applies and to dIscontinue manufacture of the
product(s) at any time.
4-391
•
D40N1,D40N2,D40N3,D40N4
TYPICA!- CHARACTERISTICS (continued)
FIGURE 2 - DC CURRENT GAIN
300
TJ ~
.....
200
100
70
~ 50
~
0
~
FIGURE 3 - "ON" VOLTAGES
1.4
l2~oCI
........
25°C
•
a
~
F'
10
1.0
5.0
~
c
- '"""
~
20
u
1.0
2.0 3.0 5.0
10
20 3D
" ~~
50
100
. m\~11 @ ICIIB
'" 0.6
!:;
c
> 0.4
>'
"
'\:
Vcp2.0V
~
0.8
~
w
... ~,
L 'VCE =IOV
3.0
0.3 0.5
r
1.0
~
a
TJ =25°C
1.2
IIIII
I
o
0.3 0.5
z::'s.O
1.0
2.0 3.0 5.0
"
e..
'§
....
1. 6
-
~ 1.0
~
1.2
I 11- IIr
0.01 0.02 0.05 0.1
100
200300
~
~ -2.
100mA
~
N. 'll In--.. I
I-
i
H-rti5.0 ItI-H
1.0 2.0
10 20
50 100
0.5
0.2
lB. BASE CURRENT ImAI
·Applies for ICIIB" hFEI2
-·8vbforJCEI~tI
25 DC 10 125 0C
-55 DC 10 25 DC
§-l. o
o.8
o
50
2, 0
U
I II N-UI N.I
20 30
3.0
TJ' 25°C
50mA
10
FIGURE 5 - TEMPERATURE COEFFICIENTS
FIGURE 4 - COLLECTOR SATURATION REGION
30
mA
./
ICIIB =!-
IC. COllECTOR CURRENT lmAl
2.0
lC=I.0mA 3.0mA 10mA
I
II
~~~~~~tI
lC. COLLECTOR CURRENT ImAI
o.4
10
VB~11nl @ VCE = 10 V
0.2
200 300
=
o
.
I.L
-8VBforVBE
II
250C 1o 1250C
.
-55 DCto 250C
II
-3.0
-4.0
1.0
2.0
3.0
5.0 1.0
10
20
I
50
30
10 100
IC. COLLECTOR CURRENT ImAI
FIGURE 6 -.THERMAL RESPONSE
1.0
0.1
0=0.5
0.5
~~
~~
.... ::E
0.3 -0.2
0.2
:;::;;
t;g;
i;~ o. 1
~~ 0.07
;:_~ 0.05
~~ 0.03 "'"
0.02
0.01
-
::;;;~
~
0.1
-
-
o:Ds
SIr.jlePulse
:EflJl --
Smgle Pulse
Z8JA(l1 = rId R8JA
R8JA = 62.5°Crw MIX
Plpkl
0.02
0.01
-t\;-j
,1'"
l
0.01 0.02
DutY Cycle, D = 1,/12
0.05
0.1
0.2
0.5
1.0
2.0
- - Z6JC(l1 • r(ll R8JC
R8JC =12.S oCrw MIX
5.0
10
20
50
I, TIME Im.l
4-392
100
200
500
1.0 k
2.0 k
oCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT If
TJlpkl -TC = PlpklReJCll1
S.Ok 10k
20k
SDk lOOk
D40N1,D40N2,D40N3,D40N4
TYPICAL CHARACTERISTICS (continued)
FIGURE 8 - CURRENT -GAIN BANDWIDTH PRODUCT
FIGURE 7 - CAPACITANCE
0
0
0
~
0
100
-
TJ =15'C
VCE=20V
Tp 25'C
0
=ti.
--
0
w
u
Z
I0
~ J. 0
~
u~
0
5.0
3.0
~
~
0
2.0
' -_iPP"j' If
1.0
O. 7
0.5
...... 1--..
1.0
2.0
j'j'j ti~BO
5.0
10
I--..
Cob
20
50
100
200
I0
0.5
500
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC. COLLECTOR CURRENT (rnA)
VR. REVERSE VOLTAGE (VOLTS)
APPLICATIONS INFORMATION
The D40N4 is primarily designed for use in the R, G, and
B output stages of color television receivers and with a high
BVCEO. it can supply the video amplitude requirements of
any known system. The law feedback capacitance provides good
video bandwidth with modest drive current requirements. Typical
drive is from an emitter-follower with a 4.7 k emitter-resistor
operated from a 2O-Volt supply. It will, therefore, be operable
worst-case signal conditions and some heat-sinking is required at
ambient temperatures above 50°C.
Used as a color difference output, where drive and bandwidth requirements are less severe, the D40N4 can be operated
with 27 k ohm load resistors (worst-case dissipation would
then be only 0.6 Watts). The device can, therefore, be operated
as a color-difference output without any heat radiator in ambient
directly from a number of available chroma demodulators. The
temperatures to 150 - (0.6)(75)
low output capacitance of this device adds little to the total
load capacitance, allowing improved bandwidth for a given
collector load resistor. Two typical applications for the D40N4
are shown in Figures 9 and 10.
Device dissipation will reach approximately 1.6 Watts under
In addition, the safe operating area of the D40N4 will fill the
requirements of the luminance output function with a total
equivalent load of 5.0 kilohms. Worse-case dissipation can reach
=
105°C.
3 Watts, this requires a total ROJA of (150-65)/3 = 28.4°CIW.
To achieve this a 2" X 3" aluminum plate will be required.
FIGURE 10 - RGB OUTPUT, MATRIXING COLOR
DIFFERENCE AND LUMINANCE INPUTS
FIGURE 9 - RGB OUTPUT WITH RGB INPUT
MCIl1'
CMRDM ..
DEMODUl~JO~
MCm)
CHROMA
OU_DDULATOR
4.393
•
D40Pl
.D40P3
D40P5
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS
DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS
. designed for horizontal drive applications, high-voltage linear
amplifiers, and high-voltage transistor regulators.
•
•
High Collector-Emitter Breakdown Voltage BV CEO = 225 VdJ: (Min) @ IC = 1.0 mAdc - D40P5
•
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 100 mAdc
•
Duowatt Package 2 Watts Free Air Dissipation@TA = 250 C
Tab forming and TO-5 lead forming available on
special request.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector·Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak (11
Base Current
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation@Tc::2SoC
Derate above 250 e
Operating and Storage Junction
Temperature Range
Solder Temperature, 1116" from Case
for 10 Seconds
Symbol
VeEO
VeBO
VEBO
Ie
IB
Po
D40P1
120
..
..
I D40P3 I D4OP5
I 180 I 225
250 I 300
7.00.51.0100-1.67(21200
I
.
~13.3~
Po
6.25-
~50~
TJ.Tstg
_
.
-55 to + 150 ------
260-
Unit
Vdc
Vdc
Vdc
Adc
mAde
Watts
mW/oe
Waus
mW/oe
°c
°c
DIM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Case
A
Symbol
Max
Unit
R9JA
R9JC
75
20
°CIW
DCIW
111 Pul .. Test: Pul.. Width .. 1.0 ms, Duty Cycle .. 50%.
(2) The actual power dissipation capability of Duowatt transistors are 2 W @TA
= 25°C.
B
C
D
F
G
H
J
K
L
N
Q
R
T
MILLIMETERS
MIN MAX
INCHES
MIN MAX
21.84
9.91
439
058
356
241
1.70
048
1219
1.65
991
356
1.0
7.87
4.6&
074
4.06
2.67
196
0.66
1295
203
10.16
3.81
0860
0390
0173
0023
0140
0095
0067
0.019
0480
0.065
0390
0.140
0880
0410
0183
0029
0160
0105
0077
0026
0510
0.080
0400
0.1&0
9.14
0.310
0.360
223&
10.41
TO-202AC
CASE 306-04
4-394
D40P1, D40P3, D40P5
I
ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted.)
Character
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
BVCEO
040Pl
IIc = 1.0mAde,IB = 0)
040P3
D40P5
Collector Cutoff Current
'CBO
D40Pl
(VCB = 200 Vde, IE = 0)
D40P3
(VCB = 250 Vde, IE = 0)
D40P5
(VCB = 300 Vde,IE· 0)
Emitter Cutoff Current
'EBO
(VEB a 7.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
hFE
IIC = 80 mAde, VCE = 10 Vde)
(lc = 2.0 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
VCE(.a!)
IIC = 100 mAde, IB = 10 mAde)
Base-Emitter Saturation Voltage
VBE(.a!)
(lc = 100 mAde,lB = 10 mAl
DVNAMIC CHARACTERISTICS
Currant-Geln - Bandwidth Product
fT
(lc = 80 mAde, VCE = 10 Vde, f = 20 MHz)
Collector-Base Capacitance
Ceb
(VCB· 10 Vde, 'E = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Storage Time
IIC(on) =80 mA, 'B(on) = 8.0 mA, '8(0ff) =8.0 mAl
I
(1) Pul.e Te.t: Pulse Width
Min
Max
-
120
180
225
Unit
Vde
-
I'Ade
-
-
10
10
10
10
40
20
-
-
I'Ade
•
-
-
1.0
Vde
-
1.5
Vde
50
-
MHz
-
6.0
pF
<: 3001", Duty Cycle <: 2.0%.
TYPICAL CHARACTERISTICS
fiGURE 1 - CURRENT-GAIN - BANDWIDTH PRODUCT
'" 300
I
'"
~
I-
g
VCE' 20 V
Tj" 250C
200
e
~
'"e
l-
~ 100
FIGURE 2 - CAPACITANCE
100
70
50
~
-
30
-
~
z
;;:
~ 5.0
\
50
Y·3.0
'"
r-
Ccb
2.0
'"u
~
t--
~ 10
~ 1.0
70
'-?
§
C.b
w
u
.......... .......
z
:i
20
-
..-;;
1.0
30
10
50
30
20
lC. COLLECTOR CURRENT (mAl
70
100
0.3 0.50.7 1.0
4-395
2.0 3.0 5.07.0 10
20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTSI
200300
D40P1, D40P3, D40P5
TVPICAL CHARACTERISTICS (Continued)
FIGURE 4 - "ON" VOLTAGE
FIGURE 3 - DC CURRENT GAIN
500
1.0
--
z
¢
'" 100
•
50
g
30
-
-
VBEhatl @Ic/lS ' 10
~
0
~
VSE{onl @VCE ' 10V
w
--VCE'2.0V
--VCE'10V
~ 20
2.0
'"
100
200
I
0
>
>'
,~
5.0
10
20
50
IC. COLLECTOR CURRENT {mAl
/'1
0.2
0
0.5
500
u.I
TJ' 25°C
.e
0.8
IC' 25 rnA. SOmA
~ 0.6
1\
\
- \
:::
0.4
o
~
~
>
0.1
\
0.1
I I II
I I II
~
+250& to +125 0C
~ -1.6
-
~
20 30
50 70100
<
.e
~a
160
.1
1
TA' 25°C
PULSE WIDTH' 30n",- r--IB~
DUTY CYCLE" 2.0%
,.\)f1\P-
~
12 0
~8 Of/.V~
~
40
---
h -/'
"'o
W/
. / . . . .---;;r.~
,~ -r
-
10
-550C to +250C
-2.4
0.2
20
/
0.5
1.0
5.0
10
20
2.0
IC. COLLECTOR CURRENT (mAl
50
,/
--
Ion
200
FIGURE 8 - COLLECTOR CUTOFF REGION
103
I--- I--"
-- -
r-
VCE - 150V
)---- TJ ' 150·C
/
I
0
....j.,....f-t[
OVS for VBe
600"A
V
V
-550C to +250 C
FIGURE 7 - COLLECTOR CHARACTERISTICS
200
+250 Cto +1250 C
~ -0.8
ih--
0.2 0.3 0.50.71.0
2.0 3.0 5.07.0 10
lB. BASE CURRENT {mAl
I I"
8
\
IT
500
'OVC FOR VCE(sa.1
U
\
.......
0.8
~
$
200 mA
\
"
0
100mA
200
I I II
II IIII
II IIII
>
o
2.0
* Applies tor lellB <:hFEI2
u
g,
'"~
!
1.0
5.0
5.0
10
20
50
100
IC. COLLECTOR CURRENT {mAl
FIGURE 6 - TEMPERATURE COEFFICIENTS
1.6
o
~
~
VCE{sa,I@IC/IS' 10
FIGURE 5 - COLLECTOR SATURATION REGION
~ 1.0
--
!:; 0.4
'""'~' ,
1
I II IIII
10
1.0
-I-+±:±:!:tt~
0.6
......- ~
V
'"
~
7.0
5. 0
0.5
II III
0.8
- -
25°C
;:::: -55°C _
10
~
-
Tj= 1500C
200
....
ffi
I I III
TJ '25°C
300
-
400 "A
I
20~"A
I
30
2~
40
50
VCE. COLLECTOR·EMITTER VOLTAGE {VOLTSI
4-396
r--
100°C
REVERSE
FORWARO
f-- 25°C
10-3 -0.4
-0.2
+0.2
+0.4
. VSE. BASE·EMITTER VOLTAGE (VOL TSI
+0.6
D40P1, D40P3, D40P5
TYPICAL CHARACTERISTICS (Continued)
FIGURE 9 - THERMAL RESPONSE
1.0
O.
O.
~D=O.S
-
;ic
~~ 0.3 I~
~~ D.2 0.1
~~
O. 1
in",
:i~ 0.0 7
~.~ 0.05
w~
~ I[Os
:?~ 0.03 10'\
0.02
-
-
b:;::;iii
SU'lglePulse
Single Pulse
PEJUl
0.02
0.01
I
Duty Cyele. 0 '" t1/12
0.05
0.1
O.S
0.2
1.0
2.0
5.0
10
20
50
I. TIME (m,)
FIGURE 10 - ACTIVE REGION SAFE-OPERATING AREA
700 0 0 0 R E m B m
100.,==
1
m
500
\
2.0
lOrnA
1 rnA 3 mA
~
30mA SOmA
w
200
0,3
300
lDOmA
1.6
~
tl
1.0
~
1.2
S.O
ICIIS "10
'I J..1
I
2.0
,/
100
10
20
50
IC' COLLECTOR CURRENT ImA!
200 300
1
L
r- "~C f~r VCE:...!
25 DC'D 1250C
8
-550C to 250C
25DC.o 1250C
~ -1.0
0.8
::>
-
r-..
~
1\
0.4
0.05 0.1
0.2
0.5 1.0 2.0
5.0
IS, SASE CURRENT ImA!
10
-55'D 25°C
I I
'~" -3.0 t-- 'IVS f;r VSE
:i'
r-
0
0.01 0.02
~ -2.0
1\
I'
I'
8
>
I
• ~PPli~'D ICllis ~ hFIEli
2.0
U
o
~_
-
l3
3;
E
....
:::
!,;,
1.0
I
FIGURE 5 - TEMPERATURE COEFFICIENTS
3.0
;'"o
~
I
VCE(sa.!
0.2
1,\
o
2:
I
1
FIGURE 4 - COLLECTOR SATURATION REGION
_
J
.,; 0.4
l\
30
50
100
IC, COLLECTOR CURRENT ImA!
VSE(Dn!@VCE- 10 V
0
\\
~
VBEI...!@ICIIS - 10
~
VCE" 10 v
-
1.0
0
20
II
g
25 DC
20
50
-4.0
1.0
100
10
S.O
30
3.0
IC, COLLECTOR CURRENT ImA!
100
50
FIGURE 6 - THERMAL RESPONSE
1.0
0.7
O' 0.5
0.5
~c
~~ 0.3
~~ 0.2
....
.... 0'"
r-
F
ffi~ 0.1
l-
1
i-- ~
,
I"'"
l:iiiiiiil
-
i
0.1
I
0.05
....
I
U;~
~~O.07
SmglePulse
:=.~ 0.05
~~
0.02
o CURVES APPLY FOR POWER
-t~j
OU'y Cycle, 0 "'11'2
1
0.01
ZOJA(.!" rl') R'JA
ROJA " 62.\"CIW Max
Plpk)
0.01
,1"
0.01
0.05
0.1
0.2
0.5
1.0
2.0
, J
:E.rLfl --
Single Pulse
0.03 !.o'\ 0.02
0.02
I
Z'JC(t) " rlt! R~JC
R'JC" 12.SDCIW Max
5.0
10
20
SO
',TIME(ms)
4-400
100
200
SOO
1.0k
2.0k
PULSE TRAIN SHOWN
READ TIME AT"
TJ(pk) -TC "P(pk! ROJCI')
S.Ok 10k
20k
SDk
l00~
MDS20, MDS21
TYPICAL CHARACTERISTICS Icontinued)
FIGURE 1 - CAPACITANCE
FIGURE 8 - CURRENT-GAIN-BANDWIDTH PRODUCT
100
'" 200
~
40
30
~
b
::>
,-
i=
'"Z
<
o
TJ·250C
S
~
10
5.0
2.0
1.0
0.5
4
;;:
'"
~
Ccb
",-
3.0
TJ·250C
80
70
60
50
~ 40
~
~
t- VCE! 20 V
~ 19~
C,b
20
w
150
Applies to Rated VCBO I
IIII
1.0
2.0
rI-
IIII
5.0
_
...--
--
30
20
15
::>
'"
.i-
t-10
20
50
100
VR. REVERSE VOLTAGE IVOLTS)
200
500
10
2.0
5.0
15
10
lC. COLLECTOR CURRENT ImA)
20
30
40
APPLICATIONS INFORMATION
The MDS21 is primarily designed for use in the R. G. and B
output stages of color television receivers, and with a high BVCEO
it can supply the video amplitude requirements of any known
system. The low feedback capacitance provides good video bandwidth with modest drive current requirements. Typical drive
is from an emitter-follower with a 4.7 k emitter-resistor operated
from a 20-Volt supplV. It will,-therefore, be operable directly from
a number of available chroma demodulators. The low output
capacitance of this device adds little to the total load capacitance,
allowing improved bandwidth for a given collector load resistor.
Two typical applications for the MDS21 are shown in Figures 9
and 10.
Device dissipation will reach approximately 1.6 Watts under
worst·case signal conditions and some heat sinking is required
at ambient temperature above 50o C.
Used as a color difference output, where drive and bandwidth
requirements are less severe, the MDS21 can be operated with
27 k ohm load resistors (worst-case dissipation would then be only
0.6 Watts). The device can, therefore, be operated as a color·
difference output without any heat radiator in ambient tempera·
tures to 150 - 10.61162.5) = 112.5 0 C.
In addition, the safe operating area of the MDS21 will fill
the requirements of the luminance output function with a total
equivalent load of 5.0 kilohms. Worst-case dissipation can reach
3 Watts; this requires a total ROJA of 1150 - 65)/3
= 28.4 0 C/W.
To achieve this a 2" x 3" aluminum plate will be required.
FIGURE 10 - MDS21 AS RGB OUTPUT. MATRIXING
COLOR DIFFERENCE AND LUMINANCE INPUTS
FIGURE 9 - MDS21 AS RGB OUTPUT WITH RGB INPUT
4-401
•
NPN
PNP
MDS26
MDS27
MDS76
MDS77
DUOWATT
3.0 AMPERE
Advance InforDl.ation
COMPLEMENTARY SILICON
POWER TRANSISTORS
COMPLEMENTARY PLASTIC SILICON
POWER TRANSISTORS
40,60 VOLTS
10 WATTS
. designed for low power audio amplifier and low current, high
speed switching applications.
•
CI
Collector·Emitter Sustaining Voltage VCEO(sus) = 40 Vdc - MDS26, MDS76
= 60 Vdc - MDS27, MDSn
•
DC Current Gain hFE = 40 (Min) @ Ie = 0.2 Adc
= 30 (Min)@lc= 1.0Adc
•
Current·Gain - Bandwidth Product tr = 50 MHz (Min) @ IC = 100 mAdc
Tab forming and TO·5 lead forming available on
• Annular Construction for Low Leakages ICBO = 100 nA (Max) @ Rated'VCB
special request.
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MDS27
MDS77
Unit
VCB
60
SO
Vdc
VCEO
40
60
Vdc
7.0-
Vdc
IC
-3.0-5.0-
Adc
IB
1.0
Adc
Po
2.0---0.Q16-
Watts
VEB
Collector Current - Continuous
Peak
Base Current
Total Device Dissipation
Derate above 2SDC
MDS26
MDS76
Svmbol
@
T A = 2SoC
Total Device Dissipation@Tc=2SoC
Derate above 25°C
Operating and Storage Junction
W/oc
----
Po
TJ.T stg
Watts.
-10
-SO_-65to+150 _ _
mW/oC
°c
atbo/'
r
ot~
b;-t",
ID
oj"U
,~-G
•N
PIN
L rr---:r J
LBASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
!~-=tJ
Temperatur, Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
8JC
12.5
°C/W
Thermal Resistance, Junction to
8JA
62.5
°C/W
Max
Unit
MI LLIMETE RS
INCHES
DIM MIN
MAX
MIN
MAX
21.84 22.35 0.860 0.880
A
9.91 10.41 0.390 0.410
B
C
4.39
4.65 0.173 0.183
0
F
G
H
Ambient
J
K
L
N
0
R
T
0.58
3.56
1.41
1.70
0.48
11.19
1.65
9.91
3.56
1.07
7.87
0.74
4.06
1.67
1.96
0.66
12.95
2.03
10.16
3.81
1.75
9.14
0.023
0.140
0.095
0.067
0.019
0.480
0.065
0.390
0.140
0.042
0.310
CASE 306-04
TO-202 AC
Thill, advance Information and specification, .r. subject to chong_ without notlc•.
4-402
0.019
0.160
0.105
0.071
0.016
0.510
0.080
0.400
0.150
0.069
0.360
MDS26, MDS27NPN/MDS76, MDS77PNP
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Min
Max
40
60
-
MDS26,MDS76
MOS27,MDS77
-
0,1
0,1
MDS26,MDS76
MDS27,MDS77
-
0.1
0.1
-
0.1
Characteristic
Svmbol
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lc = 10 mAde, Ie = 0)
Collector Cutoff Current
(VCB
(VCB
= 60 Vde,
= 80 Vde,
IE = 0)
IE = 0)
(VCB = 60 Vdc,lE
(VCB = 80 Vde, IE
=0, TC = 125°C)
= 0, TC ~ 125°C)
Vde
VCEO(sus)
MDS26,MDS76
MDS27,MDS77
ICBO
/lAde
mAde
Emitter Cutoff Current
(VBE = 7.0 Vde, IC = 0)
lEBO
/lAde
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 200 mAdc, VCE = 1.0 Vdc)
(lc = 1.0 Ade, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 209 mAde, IB = 20 mAde)
(IC = 1.0 Ade, IB = 100 mAde)
(lC = 3.0 Ade, IB = 600 mAde)
VCElsat)
Base-Emitter Saturation Voltage
VBE(sat)
(lC = 2.0 Ade, IB
40
30
200
-
0.3
0,6
VBElon)
= 500 mAde, VCE = 1.0 Vde)
Vde
1.7
Vde
-
= 200 mAde)
Base-Emitter On Voltage
(lC
-
hFE
1.B
Vde
-
1.5
50
-
-
50
70
jlVNAMIC CHARACTER)STICS
Current-Gain - Bandwidth Product (2)
(lC = 100 mAde; VCE = 10 Vde, f test , ~ fo MHz)
Output Capacitance
IVCB = 10 Vde, IE = 0, f = 0,1 MHz)
MHz
fT
Cob
MDS26. MDS27
MDS76. MDS77
pF
-
(1) Pulse Te.t: Pulse Width"; 300 1lS. Duty Cycle"; 2.0%
(2) IT = Ihfel. f test
4-403
•
MOS60
PNP SILICON ANNULAR TRANSISTOR
DUOWATT
. designed for general·purpose applications requiring high breakdown voltages. low saturation voltages and low capacitance.
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
• Complement to N.PN Type 2N6558
MAXIMUM RATINGS
Symbol
VII..
Unit
VCEO
300
Vde
Collector· Base Volt.
Vca
300
Vde
Emltter·Base Voltage
VEa
5.0
Vde
Collector Current - Continuous
IC
500
Total Power Dissipation" T A" 25°C
Der,ll ebove 2So C
Po
Total Power Dissipation iii TC .. 2So C
Po
2.0
16
10
BO
-5510+150
mAd.
Watt
mWJOC
R.ting
Collector-Emitter Voltage
Der.te above 2So C
Operating and Storage Junction
Temperature RInge
TJ.Tstg
THERMAL CHARACTERISTICS
Symbol
Ch.racmlstic
I
Thermal Resist,ncI, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS IT A
8JC
8JA
=
,I
I
250C un.... otherNdo notodl
Ch.fKwistic
$0-
OFF CHARACTERISTICS
Collector EmItter Breakdown VOltage! 11
(Ie • 1 0 mAde. 10 .. 01
BVCEO
Coliector.Ba~
BVCHO
Breakdown Voltage
lie -100IlAdc,IE "'0)
Emitter-Base Breakdown Voltage
12.5
62.5
W....
mWf'c
OC
I
-I
-,
--
Unh
·uCIW
Unn
Vd.
Vd.
300
Vd.
BVEBO
5.0
lie .. 10 "Ade. Ie .. 01
ICBO
Emitter Cutoff Current
leBO
""de
0.2
""de
01
(VSE == 3.0 Vdc, IC == 01
ON CHARACTERISTICS
hFE
25
30
30
lie'" 10mAdc, VCE == 10 Vdcl
HC'" 3OmAdc, VCE == 10Vdc)
Coll8Ctor·EmitterSaturation Voltage
tic .. 30 mAde, 18 .. 3.0 mAdeI
Sase·EminerSaturation Voltage
tiC == 30 mAdc:, IB '"' 3.0 mAdel
a
300
Collector Cutoff Current
IVCB = 200Vdc,le .. 0)
DC Currlnt Gam
He == 1.0mAdc, Vee == 'OVdcl
I
°CIW
Vd.
VCElsat)
0.75
09
VBElsad
Vd.
OYNAMIC CHARACTERISTICS
Current·Gam Bandwidth Product
ClC" '0 mAde, VCE .. 20 Vdc, f .. '0 MHz)
t-r
Collector· Base Capacitance
(Vce = 2OVd(;.le -0, f .. 1.0 MHz)
e..,
MH,
45
.F
8.0
111 Pulse Test: Pulse Width" 300,,5. DutY Cycle" 2'lIo.
STYLE I:
PIN I. EMITTER
2. BASE
3. COLLECTOR
4. COLLECTOR
MILLIMETERS
INCHES
DIM MIN MAX
MIN MAX
A 21.B4 22.35 0.860 O.BBO
9.91
0.390
~
C T39 I~~t "[ill f~
0183
0.74 0023 0.029
0
0.58
406 0140 0160
F
~
I~
~ ~ 2.67 ~.§..
0067
f-.!.!-- 170 T.96
O.SS" "iiQj9.
~
i295· 10.4BO ,~
K
L
165
2.03 0.065
N
991 1016 0390
Q
3.56
3.81 0.140 0.150
1.07
1.75 0.042 0.069
R
7.B7
9.14 0.310 0.360
T
~ft4
CASE 306-04
TO·202 AC
4-404
~Ws-
~Wo-
MDS60
FIGURE 1 - DC CURRENT GAIN
15
a
10
TJ
0;
V~E ~ \0 ~~c
+125 0 C
a
z
;;:
'" a
......
r------ +25°[:
""'" .......
0-
~
0 _ - 5 5 0C
"""~
=>
u
u
~~
"""-
c
;
a
20
15
1.0
2.0
7.0
5.0
30
10
20
30
50
BO
I"
100
IC. COLLECTOR CURRENT (mAl
FIGURE 2 - CAPACITANCES
FIGURE 3 -CURRENT-GAIN-BANDWIDTH PRODUCT
a
10
'"
~
a
C,b
Or-a
TJ"25OC
80 -VCE ~20 Vdc
~
60
0C
'"
40
;;;
30
~
b-
100
./
\
V
z
a
;;:
'"
2. a
;--
1.a
01
02
0.5
1.0
2.0
50
10
20
50
100 200
~
f\
20
=>
u
C
.f
500 1000
0
1.0
50
20
FIGURE 4 - "ON" VOL TAGES
1.0
8
-
VB~ @JCEI~ 10 ~
-
---
1
f-i-"
~
~
8
o
1.0
2.0
5.0
10
0
TJ ~ 150°C
30
- - - SECOND BREAKDOWN LIMITED
20 - BONDING WI RE LIMITED
50
-- -
_.-
THERMALLYLlMITEDIHe~250C
a
-I-'"
20
~
100
~
I 1/
......
200
~
'"c
VCE(sa'l@ ICIIB ~ 10
....
300
0-
4
O. 2
100
50
20
FIGURE 5 -DC SAFE OPERATING AREA
500
I
I
10
Ie. COLLECTOR CURRENT (mAl
VR. REVERSE VOLTAGE (VOLTSI
0
20
100
30
!III
70
100
200
VCE. COLlECTOR·EMITTER VOLTAGE (VOLTSI
IC. COLLECTOR CURRENT (mAl
4-405
300
400
•
MOS1678
NPN SILICON ANNULAR. RF TRANSISTOR
DUOWATT
4W-27 MHz
___ designed for use in Citizen-band and other high-frequency
communications e'quipment operating to 30 MHz. Higher breakdown
voltages allow a high percentage of up-modulation in AM circuits.
RF POWER OUTPUT
TRANSISTOR
NPN SILICON
•
•
Output Power = 4 W (Min) @ VCC = 12 Vdc
It
Power Gain
•
High Collector-Emitter Breakdown Voltage - BVCER ;;;. 65 Vdc
= 10 dB (Min)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Base Voltage
VCBO
65
Vdc
Collector-Emitter Voltage
VCER
65
Vdc
Emitter-Base Voltage
VEBO
4
3
Vdc
Rating
Collector Current - Continuous
Total Power Dissipation @TA
IC
PD
2
16
Watt
mW/oC
= 2SoC
PD
10
80
Watt
mW/oC
TJ. Tstg
-55to+150
°c
Derate above 2SoC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
I
I
Characteristic
Thermal Reistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
8JC
I
8JA
I
I
J
available on special request.
Adc
= 2SoC
Derate above 2SoC
Total Power Dissipation@Tc
Tab-forming and TO-5 lead-forming
Max
12.5
62.5
I
I
1
Unit
°CIW
°c/w
Q~'
1
tln
j
""l~~","
l. I
om,
I.,
3. EMITTER
4. COLLECTOR
0-
R
K
'L"
-G
r-N~
L~5-.J
I"
FIGURE 1 - POWER GAIN
)-=J.J
10
..-
---
MILLIMETERS
DIM MIN .MAX
A 21.84 22.3&
B
9.91 10.41
C
4.39
4.65
D
0.58
0}4
F
3.56
4:06
G . 2.41
2.61
H
1.10
1.96
J
0.48
0.66
K
12.19 12.95
L
1.65
2.03
N
9.91 10.16
Q
3.&6
3.81
R
1.01
1.15
T
1.81
9.14
~
CIRCUIT TUNEP@Pin·0.25W
VCC"12Vdc
I'YMHZ
I
I
0.1
0.2
0.3
0.5
0.1
Pin. INPUT POWER (WATTS)
• Annular Semiconductors Patented by Motorola Inc.
4-406
INCHES
MIN
MAX
0.860 0.880
0.390 .0.410
0.113 0.183
0.023 0.029
0.140 0.160'
0.095 0.105
0.061 0.011
0.019 0.026
0.480. 0.510
0.065 0.080
0.390 0.400
0.140 0.150
0.042 0.069
0.310 0.360
~ASE 3116-04 .
TO-202AC •
MDS1678
ELECTRICAL CHARACTERISTICS (T A-
25 0 C unloss otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
-
-
Vde
BVCER
65
BVEBO
4
'CBO
-
-
0.01
15
10
-
1
Vde
45
pF
(lC -10 mAde, RBe = 10 n)
Emitter-Base Breakdown Voltage
(lE=l mAde,lc=O)
Collector Cutoff Current
(Vca = 30 Vde, IE = 0)
Vde
mAde
ON CHARACTERISTICS
DC Current Gain (2)
(lC = 500 mAde, Vce = 5 Vde)
(lC = 1.5 Ade, VCE = 5 Vde)
hFE
-
-
VCE(sat)
-
-
Cob
-
-
IT
100
GpE
10
-
-
dB
Pout
4
-
-
Watts
Collector Efficiency (3)
(Pout = 4 W, VCC = 12 Vde, f = 27 MHz)
1)
-
70
-
%
Percentage Up-Modulation (4)
(I = 27 MHz)
-
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12 Vde, IE = 0, I = 1 MHz)
Current-Gain -Bandwidth Product
MHz
(lC = 100 mAde, VCE = 5 Vde, I = 20 MHz)
FUNCTIONAL TEST (Figur.l)
Common-Em itter Amplifier Power Gain
(Pout = 4 W, VCC = 12 Vde, I = 27 MHz)
Output Power
(Pin = 400 mW, VCC
= 12 Vde, f = 27 MHz)
%
85
(1) Pulsed through a 25 mH Inductor.
(2) Pulse Test: Pulse Width .. 300 "s, Duty Cycle .. 2.0%.
RFPout
(3) 1)
= (VCC) (lC) . 100
(4) Percentage Up-Modulation is measured in the test circuit (Figure 3) by setting the Carrier Power (Pc) to 4 Watts with Vee = 12 Vdc and
noting the power input. Then the Peak Envelope Power (PEP) is noted after doubling the original power input to simulate driver modulation
(at a 25% duty cycle for .thermal considerations) and raising the Vee to 24 Vdc (to simulate the modulating voltage). Percentage Up·
Modulation is then determined by the relation:
Percentage Up-Modulation:
FIGURE 2 -.OUTPUT POWER WITH VCC VARIATIONS
./'" ~
./
.//
,/ .....
"...-3
10
.......
.....
type 56-590-65/38
--
RFC2 -
26 Turns #22 enameled wiro (2 lavers-13 turns each
layerl 1/4" inner diameter
L 1 - 0.22 JlH mol dod choke
L2 - 0.68 J.lH molded choke
Pi~--::7:
O.4t..
FIGURE 3 - 27 MHz TEST CIRCUIT
r -__~______~____-oVcc
O.2W-
12 Vdc
./
14
112_ 1] 0100
C1. C2 - 9.0-180 pF ARCO 463 or equivalent
C3. C4 - 4.0-80 pF ARea 462 or equivalent
C5 - 0.02 IlF ceramic disc
C6 - 0.1 IlF ceramic disc
RFC1 - 4 turns #30 enameled wire wound on ferroxcube bead
0
f-CIRCUIT TUNED@VCC·24V,Pin·O.2W
DUTY CYCLE· 25%
!'27MHz
[ep~p)
C4
18
22
26
VCC, COLLECTOR SUPPLY VOLTAGE (VOLTS)
4-407
C3
Output
MJ41 0 (SILICON)
MJ411
HIGH VOLTAGE NPN SILICON TRANSISTORS
. designed for· medium to high voltage inverters, converters,
regulators ana switching circuits.
•
•
High Coliector·Emitter Voltage VCEO = 200 Volts - MJ410
300 Volts - MJ411
5 AMPERE
POWER TRANSISTORS
NPN SILICON
200-300 VOLTS
100 WATTS
•
DC Current Gain Specified @ 1.0 and 2.5 Adc
•
Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.8 Vdc@ IC = 1.0 Adc
MAXIMUM RATINGS
Rating
I
Symbol
MJ410
VCEO
200
Collector-Base Voltage
VCB
200
Emitter·Base Voltage
VEB
5.0
Vdc
IC
5.0
10
Adc
Collector-Emitter Voltage
Collector Current - Continuous
Peak
I
I
MJ411
Unit
300 .
Vdc
300
Vdc
aase Current
IB
2.0
Adc
Total Device Dissipation@Tc"'7SoC
Derate above 7SoC
Po
100
1.33
WIDe
Operating Junction Temperature Range
Storage Temperature Range
Watts
TJ
-65 to +150
T stg
-65 to +200
·c
·c
THERMAL CHARACTERISTICS
Max
Characteristic
Thermal Resistance. Junction to Case
0.75
Lr~
r~,
I
ES::?-t;:
PLANE
-
ELECTRICAL CHARACTERISTICS fTC' 25·C unle... the",;,e nctedl
I
Characteristic
Symbol
Min
I
Max
Unit
OFF CHARACTERISTICS
. Follector-Emitter Sustaining Voltage
lie'" 100 mAde. IS '" 01
VCEO(susl
MJ410
MJ411
~lIector
Cutoff Current
IVCE = 200 Vdc. IS = 01
MJ410
IVCE = 300 Vdc. IS = 01
MJ411
Collector Cutoff Current
(VeE =200 Vdc. VEBloffl '" 1.5 Vdc.
TC -125c CI
(VeE "'300 Vdc. VEBlof') -1.5 Vdc,
TC'" 12S0C)
Emitter Cutoff Current
IVES· 5.0 Vdc. IC· 01
ICEO
ICEX
MJ410
MJ411
IESO
200
300
-
-
0.25
Vdc
mAde
0.25
mAde
-
0.5
-
5.0
STYLE 1:
PIN~: :':I~~"ER
0.5
CASE: COLLECTOR
mAde
MILLI ETERS
DIM MIN MAX
ON CHARACTERISTICS
DC Current Gain
(Ie" 1.0 Adc, VeE = 5.0 Vdc)
30
(Ie'" 2.5 Adc. VeE'" 5.0 Vdcl
10
Collector-Emitter Saturation Voltage
A
8
C
80
D
E
VCElsat)
O.S
Vdc
VSElsat)
1.2
Vdc
tiC = 1.0 Adc, IS' 0.1 Adc)
Base·Emitter Saturation Voltage
tiC;; 1.0 Adc, IS" 0.1 Adc)
NOTE:
1. DIM "0" IS alA.
Current-Gain-Bandwidth Product
(Ie" 200 mAde, VeE = 10 Vdc.
-
39.37
21.08
-
1.119
3.43
6.35
0.99
F 29.90
10.7
H 5.3
J 1.
K 11.8
0- 3.84
R
DVNAMIC CHARACTERISTICS
--
-
6
INCHES
MIN
MAX
-
1.550
0.830
0.039
0.043
0.135
1.197
o.
-
30.40 . 1.177
11.18
.59
1.15
12.19
4.09
26.67
.440
10
0.655
0.440
0.151
-
CASE 11-01
TO·3
f"'.OMHzl
4-408
Q.3tlO
0.220 .
0.675
0.480
0.161
.1.050
MJ410, MJ411
FIGURE 1 -ACTIVE REGION SAFE OPERATING AREA
10~~~~~~~~~~~~~~~~~~~~~~
5.0~
10I1ls~500", =~
oI-+t+t-j--,,-----::-±---+-+,..;...t--Pld!
0
TJ=150 e
riO
In',~~-+-+-1
'\,\
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation, i.e .. the transistor must not
be subjected to greater dissipation than the curves mdicate.
The data .of Figure 5 is based on T J (pk) = 150°C; T C is variable
depending on conditions. Pulse curves are valid for duty cycles of
10% provided TJ(pk)$150 o C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by secondary breakdown.
~ 1.0~1~~~~~dc"~'I~
0.5
c:
=>
~O 0.2 H - - - - - - Secondary Breakdown Limited
r-_ _ _ _ lJonrling Wire limited
"
"
"-
g8 lt~f-~-~-~-~-~-~T~he~rm~'§I~Li~m~il~at~io~n~at~T~e~=~7~5~oe~~~'~~'~~~
__
Curves Apply Below Rated VCEO
0.05
!:2
MJ410_
0.01
H+H-t---t--if-+-+-H-+rr -
-
o.Q1.':-'-...L'-':':--_-:!::---L--L-:!:-L.LJ.~;:----::!::-...L--":::-:'
10
5.0
10
50
100
100
500
VeE. eo LLEeTOR·EMITTER VOL TAGE (VOL TSI
FIGURE 2 -DC CURRENT GAIN
FIGURE 3 - "ON" VOL TAGES
TJ - 150 0 e
0
'"
;;'
~
'"~
V
0
I-'"
V
0
'\ ~ VeE
-....
f-"
~
= 5.0 Vdc
0
150C
-I
?
1'1
'"'"
0:
~
I--- -55 0C
V l.-
J
11
1-[ 1[·1
a
0.05
0.1
0.1
0.3
0.5
10
1.0
3.0
0.05
5.0
0.1
0.1
03
0.5
1.0
10
FIGURE 4 -SUSTAINING VOLTAGE TEST LOAD LINE
FIGURE 5 -SUSTAINING VOLTAGE TEST CIRCUIT
50 0
50 mH
~ 400
.E
...
~
",~I
'" 30 0
~
....,
r--
VCEO(su,) ISAC~EPTABLE WHEN
.VeE;> RATED VCEO.AT IC = 100 mA
I.
8
~ 100
a
a
100
100
\
-=-
\
6.0 V
\
'MJ4\0MJ411
300 Il
300
30
IC. COLLECTO RCU RRENT (AMP)
Ie. COLLECTOR CURRENT (AMP)
200
,
~r--
f-f.+-H+-+-+++-t-t'1l"rFF--VeE(sat)@ le/18 = 5
5. 0
'"o
~
II
400
500
VeE. COLLECTOR·EMITTER VOLTAGE (VOL-TS)
4-409
1.0 11
5.0
MJ413 (SILI(:ON)
MJ423
MJ431
HIGH-VOLTAGE NPN SILICON TRANSISTORS
10 AMPERE
POWER TRANSISTORS
NPNSILICON
. . . designed for medium-to-high voltage inverters,
converters, regulators and switching circuits.
• High Voltage -
VCE<
= 400 Vdc
400 VOLTS
125 WATTS
• Gain Specified to 3.5 Amp
• High Frequency Response to 2.5 MHz
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
<.:.ueclor-..... .IIag.
Emltter-ISHe Vo tago
Collector (..'Urrent
ConttnuOWl
Base Current
Totar!,:t=~~':~lr.gon
9TC= .un.;
OperaUon Junction Temperature Range
Storage Temperature Range
Symbol
MJ413
MJ423
VCEX
.......
.......
...
I.
2.0
CB
EB
IC
IB,
400
MJ431
Unit
400
Vde
ow
,ac
IU
I.
AC1C
2.0
2.0
400
,ae
Ade
"D
;~~
;i~
TJ
-65 to +150
·C
-ti. 10 +200
-,;
T.tg
THERMAL CHARACTERISTICS
Characteristic
Max
Thermal Resistance. JuncUon to Case
ELECTRICAL CHARACTERISTICS
1.0
(Teo:: 25·'(: IInieu otherw.se noted)
Symbol
Characteristic
Min
Max
Unit
325
-
......
OFF CHARACTERISTICS
Collector-Emitter Sustalntng Voltage~'1
(lC • 100 mAde, Is • 0)
Collector Cutoff Current
(VCE • 400 Vclc, V£B(oIl) = I. S Vdc$
(VCEo 400 Vdc, VEB (oIl)' I. S Vde,
T C ·la5'C)
Emitter CUtoff CUrrent
(VBK' 5.0 Vde,
Ie' 0)
BVCEO(sUS)
MJ413, MJ423
MJ431
loIJ413, MJ423
MJ431
MJ413, MJ'423
MJ431
CEX
--
-
~BO
-
hFE
20
IS
0.2S
2.S
O.S
5.0
5.0
2.0
Vdc
mAde
mAde
ON CHARACTERISTICS
DC Current Gain III
(lc '" 0,5 Adc, VCE • 5.0 Vdc)
MJ413
(lC' 1.0 AcIc, Va' 5.0 Vdc)
(lc· 1.0 Adc, VCE ' 5.0 Vdc)
Ue:. 2.5 AcIe,
P'c
·2.5 Adc. VCE • 5.0 Vdc)
(lc· 3. 5 AcIc, VCE ' &.0 Vdc)
Collector.. Emitter SaturaUoQ Voltage 111
O. 5 AcIc,
0.05 AcIc)
nc -
(lC - 1.0 Me,
(lC - I. 5 Me,
Is'
Is' o. 10 Ade)
Is' o. 5 AcIc)
Bue..Emitter SaturatIon Vol.... I')
0.1 AcIc,
0.05 AcIc)
nc nc nc -1.1
MJ423
30
10
MJ431
IS
10
VCE • 5.0 Vdc)
Is'
1.0 AcIc, Is - O. I AcIc)
Adc, Is' O. 5 AcIc)
p-
MJ413
VC£(s••)
MJ423
MJ431
MJ413
MJ423
MJ4S1
VBE(sat)
---
80
90
35
-
.
Oe •
8
D
E
0.99
-
F 29.90
1.
Vde
K 11.18
3.14
Q
R
-
39.31
21.08
7,2
1.09
3,03
30,40
11.18
17.5
12.19
428,67
4-410
INCHES
MIN
MAX
-
1.550
0.830
-
0.2
0.039
-
1.177
0,4
o1
o.
11
-
CASE 11-411
, TO.a
CIarnml-GoIa - - 100 mAde, VCIt • lOVcIc•
1-1.0_)
A
0.8
0.8
0.7
I.n
1.25
1.5
STYlE 1,
PIN 1, BASE
2, EMITIER
CASE, COLLECTOR
MILliMETERS
DIM MIN MAX
Vde
DYNAMIC CHARACTERISTICS
I
-
D.043
0,135
1.197
0.440
O.
675
0.480
0.161
1.050
MJ413, MJ423, MJ431
FIGURE 1- ACTlVE·REGIOII SAFE·OPEIlATlIlG An~
FIGURE 2 - POWER·TEMPERATURE DERATING CURVE
125
"-
~
'\
"-
5
"- r\..
5
o
o
0.0\'=.0-:':2.0:--'-:4!::.0..':6"'.01...l..l:1':-0--::20:--'-:4!::0..':6=0~100~-:2:t00:--'-:-400:!::-'-~I:'iOOO·
W
~
W
W
~
m
"- '\.
~
~
~
~
Te. CASE TEMPERATURE I'CI
Ve •• COLLECTOR·EMITTER VOLTAGE (VOLTSI
FIGURE 4- SUSTlllfiltlG VOLTAGE TEST CIRCUIT
FIGURE 3 - SUSTJlIflItlG VOLTAGE TEST LOAD LlHE
500
50 mHy
-
.
"
1
r-- VCEO(.wllS ACC TABLE VIHEN
Vc. ;" 325 VAT Ie = 100 rnA
1\
I
100
100
200
\
l
300
,
\
l.01l .
300 Il
400
500
Va. COLLECTOR·EMITTER VOLTAGE !VOLTSI
10
7.0
VeE= 5.0 V
I'..
0
".
i
1
is
~
TJ=IOO'C~ N5'C
0
5.0
,.
3.0
2.0
VeE -lOY
25'C
TJ:= lOO'C
'" 1.0
0
0
1/
!;i8:
0.7
_ 0.5
['I,.
3.0
~ 0.3
"
2.0
1.~.1
TRArISCOtlDUCTA~CE
FIGURE 6-
FIGURE 5 - CURRENT GAlli
100
70
50
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
0.2
7.0
10
Ie. COl.L£CTOR CURREIIT IAMPI
I
j
0.5
Ii
1.0
1.5
Y", I!ASHIlITTER VOlTAGE 1VOlTS)
4-411
2.0
2.5
MJ802 (SILICON)
30 AMPERE
POWER TRANSISTOR
HIGH-POWER NPN SILICON TRANSISTOR
NPNSILICON
100 VOLTS
200 WATTS
· .. for use as an output device in complementary audio amplifiers to
100-Watts music power per channel.
•
High DC Current Gain - hFE
•
Excellent Safe Operating Area
=25-100@ IC =7.5 A
• Complement to the PNP MJ4502
MAXIMUM RATINGS
Symbol
Valua
Unit
100
Vdc
Collector-Base Voltage
VCER
VCB
100
Vdc
Collector-Emitter Voltage
VCEO
90
Vdc
VEB
IC
4.0
Vdc
Adc
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
IB
Total Device Dissipation @I T C = 250 C
Derate above 2SoC
Po
Operating and Storage Junction
TJ. Tstg
30
7.5
200
1.14
Watts
W/oC
-6510 +200
°c
lr~
lLE:B '
E
~
,
PLANE
Adc
STYLE 1:
PIN 1. 8ASE
2. EMITTER
CASE: COLLECTOR
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Case
MILLIMETERS
DIM MIN MAX
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
200
...........
5
~
150
~ r-....
~
ijj 100
E
a:
50
~
o
o
20
40
60
-
B
...........
z
0
~
-
A
C
D
E
""
6.35
0.99
-
29.90
G 10.67
H 5.33
J 16.64
K 11.18
Q
3.84
R
F
.......,.
"""""
80
100
120
TC. CASE TEMPERATURE (OCI
140
~
160
4-412
-
NOTE:
'"
180
200
1. DIM
"Q"
INCHES
MAX
MIN
- 1.550
0.830
0.250 0.300
0.039 .0.043
0.135
1.177 1.197
0.420 0.440
0.210 0.220
0.655 0.675
0.440 0.480
0.151 0.161
1.050
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19.
4.09
28.67
IS DIA.
-
-
-
. CASE' 11-01
.
TO-3
MJ802
ELECTR ICAL CHARACTERISTICS ITC = 25°C unl_ otherwise notedl
Characteristic
Symbol
Min
Max
Unit
BVCER
100
-
Vde
VCEOlsus)
90
-
Vde
1.0
5.0
1.0
mAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
IIc = 200 mAde. RSE = 100 Ohms)
Collector-Emitter Sustaining Voltage 111
II C = 200 mAde)
Collector-Base Cutoff Current
(VCB = 100 Vde. IE = 0)
IVCB = 100 Vde.IE = O. TC = 150°C)
ICBO
Emitter-Base Cutoff Current
IVBE = 4.0 Vde. IC = 0)
lEBO
-
DC Current Gain "I
flc = 7.5 Ade. VCE = 2.0 Vde)
hFE
25
100
-
Base-Emitt.er "On" Voltage
IIc = 7.5 Ade. VCE = 2.0 Vdel
VBElonl
-
1.3
Vde
Collector-Emitter Saturation Voltage
IIc = 7.5 Ade. IR = 0.75 Adcl
VCElsatl
-
0.8
Vde
Base-Emitter Saturation Voltage
IIc = 7.5 Ade. IB = 0.75 Ade)
VBElsati
-
1.3
Vde
mAde
ON CHARACTERISTICS 11)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
IIc = 1.0 Ade. VCE = 10 Vde. I
111
= 1.0 MHz)
Pulse Test: Pulse WidthS 300 Its, Duty' Cycle :s:'2.D%.
FIGURE 3 - "ON" VOLTAGES
FIGURE 2 - DC CURRENT GAIN
2.0
~
1.8
I
1.6
TJ 12JoJ
1.4
0
~
1.2
to
1.0
V
w
~0
:>
0.8
j"
0.6
P
~ 0.2
-
I-H-++Ht
VSE("l) @Ic/la= 10
111'1
OJ
II I
1111
0.2
aji"ii d tilult:~ if,et i l ICf~'
0.1 f::::-L::.l:::.l..LlJ:':--'-=~~::l:-1~~~::-L:Jf:-L:lol-.L..Ll:~~~
0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10.
20 30
IC. COLLECTOR CURRENT (AMP)
if
j
I
VSE @VCE = 2.0 V
0.4
Data shown is obtained Irom pulse testst-1f..j-I-H+--+'~~H
V
VCE(sat)@ IC/IS = 10
o
0.03 0.05
0.1
~
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC. COLLECTOR CURRENT (AMP)
10
20 30
FIGURE 4 - ACTIVE REGION SAFE OPERATING AREA
100
50
~
;;:
"':';'
'"
5 20
t-
z
w
..
..~
ID
IX:
IX:
::> 5.0
IX:
0
t- 2.0
!2
0.5
-
~100,..-
1.0ms
'"
5.0 ms
"-
r---- TJ = 200 0 C
1.0 ~
0
... """
......
The Safe Operating Attla CUM15 indicate Ie - VeE limits below
which the deVice Will not enter tKondiry breakdown. Collector
IOld lines for &pee:iflc circuits must f,1I within the ~icabJ. Saf.
Ar.. to avoid c:aU5lng I catlStrOphk: failure. To insure operation
below the ~ .. imum T J. pOWiNemperature derating mult be obtIIfVed for both study state and putso power conditions.
. Secondary Breakdown Limited
~ --:.- ~~~~'IT:~~~=~C=250C
~
Pulse Duty Cycle S 10%
0.2
0.1
1.0
2.0
3.0
5.0
10
20
30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-413
50
100
MJ900, MJ901 PNP (SILICON)
MJ1000, MJ100l NPN
8.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS
· . . for use as output devices in complementary general purpose
amplifier applications.
..
•
High DC Current Gain - hFE = 6000 (Typ)
•
Monolithic Construction with Built·ln Base·Emitter
Shunt Resistors
@
60-80 VOLTS
90 WATTS
IC = 3.0 Adc
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
MJ900
MJ901
MJ1000 MJ100l
60
80
Unit
Vdc
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
5.0
Vdc
IC
8.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation@Tc= 2SoC
Po
90
0.515
Watts
WloC
TJ,Tstg
-55 to +200
°c
Collector Curront
60
Derate above 25°C
Operating and Storage Junction
80
Vdc
Lr~
r~K
Temperature Range
ESEATIN(~
THERMAL CHARACTERISTICS
Characteristic
PLANE
Max
Thermal Resistance. Junction to Case
1.94
FIGURE 1 - DARLINGTON CIRCUIT SCHEMATIC
STYLE 1:
PIN 1. BASE
2. EMITTER
Collector
PNP
MJ900
MJ9D1
B,se
r------ -I
I
I
I
I
I
I
I
--,
MJ1000
MJ100l
I
CASE: COLLECTOR
Collector
NPN
-1-'
r----
25°C
'"
~ 1000
<.>
,
z
j
VCE = 3.0 VollS
./
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
30
10 3
10
10 5
f. FREQUENCY (tlz)
FIGURE 4 - "ON" VOLTAGES
3.5
FIGURE 5 - DC SAFE OPERATING AREA
10
7.0
~
~ 5.0
I I
I I
3.0
TJ ~ 25 0lC
'"w
'"«
!:;
'">
:>
2.5
'"'"
I
1
VB~("li @lcllB = 25~
F
.~
. . . . 0.1 ~
0.5 -.
'"~ 0.3
VCEisal)1 @~CiIT Ttls)o
0.02
0.05
0.1
0.2
0.5
1.0
\'
SECONOARY BREAKOOWN LIMITATION
THERMAL LlMITATION@TC=250 C
BONOING WIRE LIMITATION
-
JJ90d.Mlloho
I
I I I
MJ90l, MJIOOI
0.2
I I 1111111
o
1\\
'" 1.0
IBEI@IIE~ ./
0.5
TJ=2000 C
'"~
1.5
1.0
=
;: 3.0
z
~ 2.0
I I
2- 2.0
0.01
[\
~ 100
IC; COLLECTOR CURRENT (AMP)
~
\
VCe=3.0 Vdc
IC = 3.0 Adc
200
2.0
5.0
I
0.1
10
1.0
2.0
3.0
5.0 1.0
10
20
30
\
50
70
100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations im·
posed by secondary breakdown.
IC. COLLECTOR CURRENT (AMP)
There are two limitations on the power handling ability of a
transistor: average junction temperature and secondary breakdown.
sate operating area curves indicate le-VCE limits of the transistor
that must be observed for reliable operation; e.g., the transistor
4-415
MJ2500, MJ2501 PNP (SILICON)
MJ3000, MJ3001 ,NPN
10AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SI LICON
MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS
60-80 VOLTS
150 WATTS
: .. for use as output devices in complementary general purpose
amplifier applications .
• High DC Current Gain - hFE = 4000 (Typ) @ IC = 5.0 Adc
•
..
Monolithic Construction with Built·ln Base·Emitter
Shunt Resistors .
MAXIMUM RATINGS
Symbol
Rating
Coliector·Emitter Voltage
VCEO
Collector-Base Voltage
Vce
Emitter-Base Voltage
VEe
MJ2500 MJ2501
MJ3000 IMJ3OO1
'60
80
60
Unit
Vdc
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
Ie
0.2
Adc
Total Device Dissipation@Tc=2SoC
Po
150
Watts
0.857
W/DC
TJ.Tstg
-55 to +200
°c
Symbol
Max
Unit
8JC
1.17
°C/W
Derate above 25°C
Operating and Storage Junction
lr~
,L-E::::H ,
Vdc
80
Es~i
PLANE
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
STYLE 1:
PIN 1. BASE
2. EMITTER
. NOTE:
CASE: COLLECTOR
1. DIM "0" IS DIA.
FIGURE 1 -DARLINGTON CIRCUIT SCHEMATIC
DIM
PNP
MJ2500
MJ2501
Collector
---,
,----+-,
Base
NPN
MJ3000
MJ3001
I
I
I
I
I
I
I
Collector
A
---,
,..-----
VaE @ VCE = 3.0
;; 1.0
~
a5
f-
I
~ 2.0
~
10-7.0
5.0
5.0
O. I
1.0
10
IC. COLLECTOR CURRENT (AMP)
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate IC-VCE limits of the transistor that
must be observed for reliable operation; e.g., the transistor must
2.0
3.0
5.0 7.0
10
20
30
50
70 100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
not be subjected to greater dissipation than the curves indicate,
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
4-417
MJ3029 (SILICON)
MJ3030
NPN SILICON HIGH-VOLTAGE TRANSISTORS
5 AMPERE
POWER TRANSISTORS
NPN SILICON
. designed for TV horizontal and vertical deflection amplifier
circuits.
•
•
High Coliector·Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJ3029
325 Vdc (Min) MJ3030
•
Fast Fall Time in Horizontal Deflection tf = 1.0 IJ.s (Max) @VCC = 80 Vdc - MJ3030
•
Excellent Gain Linearity for Vertical Deflectio~ hfe@0.4Adc,hfe@0.3Adc= 0.95 (Min) - MJ3029
250-325 VOLTS
125 WATTS
MAXIMUM RATINGS
Symbol
MJ3029
MJ3030
Unit
Collector-Emitter Voltage
VCEO
325
Vdc
Collector-Emitter Voltage
VCER
250
500
-
Vdc
Volta~e
VCEX
-
700
Vdc
Rating
Collector-Emitter
VEa
IC
5.0
Vdc
5.0
Adc
Base Current
la
1.0
Adc
Total Device Dissipation @TC;:: 25°C
Po
125
1.0
Watts
wfDc
-65to'150
°c
Emitter-Base Voltage
Collector Current - Continuous
Derate above 25°C
TJ,Tstg
Operating and storage Junction
Temperature Range
Ir~
It
r
E
SEATlN~
PLANE
0
1r
K
~.
I---F-J-
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JUnction to Case
I
Symbol
I
I
°JC
I
Max
1.0
I
Unit
I
°CIW
""
r--....
""- '\.
~ 100
l-
~
75
iii
Q
50
::
DIM
-
'\.
'\
I"'\.
'"~
~
~
'\
25
I'\.
'\
0
0
25
50
75
100
125
150
R
175
200
NOTE:
1. OIM "U" IS DlA.
MILLIMETERS
MIN MAX
A
B
C 6.35
D 0.99
E
F 29.90
G 10.67
H 5.33
J 16.64
K 11.18
Q
3.84
'\.
2:
0
;::
~
~
1
STYLE 1:
PIN 1. BASE
2. EMITIER
CASE: COLLECTOR
FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
125
1
~~ ""
J
~
t
1r
7
/
-
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67
4-418
0.250
0.039
-
1.177
0.420
0.210
0.655
0.440
0.151
-
CASE 11-01
TO-3
Te, CASE TEMPERATURE ('C)
INCHES
MIN
MAX
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
MJ3029, MJ3030
ELECTRICAL CHARACTERISTICS (Te = 250 e unless otherwise noted)
Characteristic
Min
Ma.
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Volt~ge(1)
(Ie;: 0.1 Adc,IB '" 0)
Vd,
250
325
Collector Cutoff Current
(VeE" 500 Vdc, RBe '" 1.5 k Ohms)
1.0
Collector Cutoff Current
(VeE'" 700 Vdc, VEB(offi '" 1.5 Vdcl
2.0
mAde
mAde
ON CHARACTERISTICS
DC Current Gain
(Ie = 0 3 Adc. VeE'" 5.0 Vdc){1)
25
lie'" 0.4 Adc, VeE = 5.0 Vdcl(1)
30
Gain Linearity
0.95
Vd,
Collector-Emitter Saturation Voltage
tie'" 3.0 Adc, IS = 0.8 Adcl
2.0
SWITCHING CHARACTERISTICS
Fall Time
(VCC=BOVdc,iC"3.0Adc,181 =O.BAde) Figure3
,
(1)PuJ$O Test: Pulso Width S30Q Ill, Duty Cyclo S2.0%.
FIGURE 2 - DC CURRENT GAIN
100
70
50
;;:
'"
20
g;
10
'-'
'-'
c
7.0
5.0
i:5
a:
~
VCE=2.0V
30
'"t-
FIGURE 3 - rEST FOR FALL TIME
"'
TJ=100~"\ I'\. 25
"to HP 212A
50
0C
1"\
3.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
~~asPuts:~~~~~r·~~:o~~~~:'p:~~o~~~e55~~fa;A~,.
IC. COLLECTOR CURRENT (AMP)
0:
5.0 ~3.0
ffi
1.0
t
""
0.5
0.3
0.2
~
-'
0.1 -
~ 2.0
a:
~
FIGURE 1\ - ACTIVE REGION SAFE OPERATING AREA
.
10
-
.'\..
TJ = 150 0 C
100"
"-
de
1.0
- - - " S:condary Breakdown
-
*HP 212A: Set for 10 p,S wide pulses at 2000 pulses per sec.
(500 IJS interv,ls). Adjust for lal = 0.8 A.
ms""
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pkl = 1500 C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ( kl'" 150 0 C. At high case
reduce the power that can
temperatures, thermal limitations
be handled to values less than the limitations imposed by second
breakdown.
limite~
Bonding Wire Limited
0.05 ~iermallimitallQn at TC = 25 C
.
. Curves Apply Below Rated VCEO
~ 0.03
MJ3029
0.02
~'J3030
0.0 1
10
20
30
50 70 100
200
wilr
0
f3
I I I II
...r
+
325
500 700 1000
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
4-419
•
M)3040
MJ3041
MJ3042
DARLINGTON
10AMPERE
POWER TRANSISTORS
NPN SILICON
HIGH VOLTAGE SILICON POWER
DARLINGTONS
· .. developed for line operated amplifier, series pass and switching
regulator applications.
•
•
Collector·Emitter Sustaining Voltage VCEO(sus) = 300 Vdc (Min) - MJ3040, MJ3041
= 350 Vdc (Min) - MJ3042
•
High DC Current Gain hFE = 100 (Min) @ IC = 2.5 Adc - MJ3040
= 250 (Min) @ IC = 2.5 Adc - MJ3041, MJ3042
•
Low Collector· Emitter Saturation Voltage VCE(sat) = 2.2 Vdc (Max) @ Ie = 2.5 Adc
•
Monolithic Construction with Built·ln
Base·Emitter Shunt Resistors
300, 350 VOLTS
175 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Continuous
Peak (11
IC
Total Device Dlssipation@Tc - 2SoC
Derate above 2SoC
Operating and Storage Junction
Temperature Range
MJ3042
Unit
400
400
500
Vdc
300
300
350
..
..
.
VCEO
VEB
Emitter-Base Voltage
Collector Current
MJ3040 MJ3041
VCB
Po
TJ, Tstg
8.0
10
15
175
1.0
_-65to+200 _
...
..
Vdc
Vdc
Adc
Watts
W/oc
DC
Lr~
rLE:B
Es~i·
PLANE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Width = 5.0 ms, Duty Cycle .. 10%.
DARLINGTON SCHEMATIC
MILLIMETERS
DIM MIN MAX
COLLECTOR
r------- --,
'A
B
C
I
0
E
I
I
I
I
BASE
-6.35
0.99
-
F 25.90
I
1.
I
39.37
21.08
7.62
1.09
3.43
30.40
11.18
INCHES
MIN
MAX
-1.177
0.250
0.039
U20
O. 10
5.5~
1 .15 0.655
12.19 0.440
4.09 0.151
28.67
R
Collector connec:lld to c-.
H
I
I
5.3~
116.64
K 11.18
II
84
~
I
-
-
---'
EMITTER
CASE 11-01
(TO·3)
4-420
1.550
0.830
0.043
0.135
1.197
0.440
O. 0
0.675
0.48IJ
0.1&1
1.050
MJ3040, MJ3041, MJ3042
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.l
Characteristic
Symbol
Min
Max
300
350
-
-
1.0
1.0
5.0
5.0
-
40
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
VCEO(susl
MJ3040, MJ3041
MJ3042
(lC = 100 mAde, la = 01
Collector Cutoff Current
(Vca = 400 Vde, 'E = 01
(Vea= 500 Vde,IE = 01
(Vca= 400Vde,IE = 0, TC = 1000 CI
(Vca= 500Vde,'E = 0, TC = 100°C I
mAde
'eao
MJ3040, MJ3041
MJ3042
MJ3040, MJ3041
MJ3042
-
Emitter Cutoff Current
Vde
-
mAde
'EBO
(VBE = 5.0 Vde, IC = 01
ON CHARACTERISTICS
DC Current Gain
hFE
(lC = 2.5 Ade, VCE = 5.0 Vdel
MJ3040
MJ3041, MJ3042
MJ3040
MJ3041, MJ3042
(lC = 5.0 Ade, VeE = 5.0 Vdel
Collector-Emitter Saturation Voltage
VeElsatl
(lC = 2.5 Ade, I B = 50 mAdel
(I C = 5.0 Ade, I B = 400 mAdel
Base-Emitter Saturation Voltage
-
-
2.2
-
3.0
-
2.5
•
-
-
Vde
2.5
Vde
VBEls"tl
(lC = 5.0 Ade, 'B = 400 mAdel
Base-Emitter On Voltage
100
250
25
50
VBElonl
(lC = 2.5 Ade, VeE = 5.0 Vdel
Vde
FIGURE 2 - DC CURRENT GAIN
FIGURE 1 - FORWARD BIAS·SAFE OPERATING AREA
2000
o
0::
~
i:'j
:::
5.0 ms
s
~
z
~
....
10ms--
~
:>
'"'
'"g
" 0.2
j
...,=>
de
0.1
10
V
II ..........
V
100
There are two limitations on the power handling abilitv of a
transistor - average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; I,e., the
transistor: must not be subjected to greater dissipation than the
curves indicate.
S
15oDc; TC is variable
depending on conditions. At high else temperatures, thermal limi·
tations' will reduce the power that can be handled to values less
than the limitati~ns imposed by second breakdown.
4-421
"...
1-""30oC
II
"
VCE·3Vd,
- - - - - VeE· 5Vde
30 . /
300
-
l.H'
10
10
SO 10 100
200
20
30
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
The data of Figure 1 is based on TJlpk)
200
-
21°C
./
300
<->
BONDING WIRE LIMIT
- - - - THERMAL LIMIT ISINGLE PULSE)
SECOND BREAKDOWN LIMIT
5
100
100
"w 100
TC· 25 0 C
:3
0.01
0005
II TJ· ISOoC
1000
0
;;.-;.
L III
02
03
0.5 01
I
IC. COLLECTOR CURRENT lAMP)
10
MJ4030, MJ4031, MJ4032 PNP (SIUCON)
MJ4033,-MJ4034, MJ4035 NPN
16 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS
60-100 VOL TS
150 WATTS
. __ for use as output devices in complementary general purpose
amplifier applications_
•
=3500 (Typ) @ IC = 10 Adc
•
High DC Current Gain - hFE
•
Monolithic Construction iNith Built-In Base-Emitter
Shunt Resistor
MAXIMUM RATINGS
VCEO
MJ4030
MJ4033
60
MJ4031
MJ4034
80
MJ4032
MJ4035
100
Collector-Base Voltage
VCS
60
80
100
Emitter-Base Voltage
VES
5.0
Vdc
Collector Current
IC
16
Adc
Base Current
IS
0.5
Adc
Total Device Dissipation@Tc =25°C
Derate above 2S o C
Po
150
0.857
Watts
W/oC
TJ.Tstg
-55 to +200
°c
Rating
Symbol
Collector-Emitter Voltage
Operating and Storage Junction
Unit
Vdc
Vdc
l~~.
r-
0
E ~AnNG
PLANE
K
i
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Svmbol
I
Thermal Resistance. Junction to Case
9JC
I
Unit
Max
1.17
I
°C/W
. STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIM ERS
DIM MIN MAX
FIGURE 1 -DARLINGTON CIRCUIT SCHEMATIC
PNP
MJ4030
MJ4031
MJ4032
Collector
--.,
,-----+.
Bose
I
I
I
I
I
I
NPN
MJ4033
MJ4034
MJ4035
Collector
--.,,-----+. I
I
I
I
I
I
__ ...II
Base
I
I
__ ...I
C
-6.35
0
0.99
A
B
E
F 9.90
G 10.67
H 5. 3
J 16.64
K 11.18
n
R
3.84
-
39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59·
17.15
12.19
4.09
26.67
NOTE:
1. DIM "Q" IS OIA.
INCHES
MIN
MAX
-
O. 50
0.039
-
1.177
0.420
0.210
0.655
0.440
0.151
-
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.2 0
0.675
0.480
0.161
1.05D
Collactor connected to CI!tS8.
Emitter
Emitter
CASE 11·01
(TO·3)
·.i·
4-422
MJ4030, MJ4031, MJ4032 PNP/MJ4033, MJ4034, MJ4035 NPN
ELECTRICAL CHARACTERISTICS ITc" 2SoC unless otherwise Mtedl
I
I
ChDracteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagell)
(Ie'" 100 mAde, Ie ., 0)
Min
Symbol
M!lx
We
BVCEO
60
BO
MJ4030, MJ4033
MJ4031, MJ4034
'00
MJ4032. MJ4035
Collector Emitter Leakage Current
{Vea" 60 Vdc, R.SE .. 1.0 k ohml
leER
{Vea ""80Vdc, RBe '" 1 Okohml
MJ4Q31. MJ4034
1.0
MJ4032. MJ4025
'.0
50
5.0
5.0
Aae = I.Ok ohm, TC '" 1500 CI
MJ4030. MJ4033
tVes =80Vdc, RBe:ll 1.0kohm. TC = lS00CI
MJ4031, MJ4034
(Vea "100Vdc. RBe = 1.0k ohm, TC '" 1S0oCI
MJ4032. MJ4035
Emitter CUloH Current
IVee ". 5.0 Vdc, Ie = 0)
5.0
lEBO
Collector-Emitter Leakage Current
(VCE = 30 Vdc, 10 = 0)
MJ4031. MJ4034
'VCE = 50 Vde, 18 = 0)
MJ4032. MJ4035
mAde
mAde
'CEO
3.0
3.0
30
MJ4030, MJ4033
(VCE '" 40 Vdc, IS '" 0)
mAde
,a
MJ40JO, MJ4033
(Vea = 100Vdc, RBe '" 1.0kohml
(VCS "'60 Vdc,
Unit
ON CHARACTERISTICS"l
'000
hFE
DC Currant Gain
(Ie'" 10 Adc, VeE'" 3.0 Vdc)
Collector·Emitter Saturation Voltage
tiC 1:'0 Ade. la.;. 40 mAde)
Vde
VCEt!:atl
25
4.0
(Ie = 16 Adc, IS = aD mAde)
aase-Emitter Voltage
(Ie'" 10 Adc, VCE" 3.0 Vdcl
(l)Pulse Tost: PulM
3.0
VBE
V,Mth~300
FIGURE 3 -SMALL-SIGNAL CURRENT GAIN
FIGURE 2 -DC CURRENT GAIN
,
50.00 0
lOO0
2000
20.000
...~ 1000
TJ = 150'C
'"
I-
,\
~ 2000
25'C
....-
B1000
is 500
~
~
c:::
VCE • 3.0 V,I"
0.1
0.2
lO0
to
200
'"
iii
10 0
j
100
0.05
500
~
~
-55'C
200
50
0.02
a
z'"
0.5
1.0
5.0
2.0
10
0
20
105
f. FAEUUENCY (Hz)
FIGURE 4 - "ON" VOLTAGES
_
I I
3.0
TJ ='25,h
FIGURE 5 - DC SAFE OPERATING AREA
50
§
~
o
ffi
5.0
r--
-
-
........
co
B 2.0
/
w
VBElsatl@ICIIB=250
1.5 -
VBE @VCE = 3.0
:> 1.0
filII
o.5
~
=
v',"
V
:3
~
VCE("'I@lclla = 2~
IIII!
o
0.02
~
20
.16
10
ii:
,
2.5
.:! 2.0
'"~
g
"
TC = 25'C
VeE = l.O Vdc
IC= 10Adc
1r..COLLECTOR CURRENTIAlIPI
3.5
-
I
z
10.000
z
:;: 5000
0.05
0.1
Vdc
,",S. Dury Cyclo ~2.D%.
0.5
ILL
1.0
5.0
10
Ic. COLLECTOR CURRENT (AMPI
TJ = 200'C
1.0
0.5
SECONOARY OREAKOOWN LIMITATION
0.2 - - -THERMAL LlMITATlON@TC'25'C
- - - BONOING WIRE LIMITATION
O. I
0.0 5
2.0
20
MJ40l0. MJ403~ :
MJ4031. ~IJ403~ _
I"(
.\ k-' MJ4032. MJ4035
5.0
10
20
,
50
100
200
VCE. COLLECTOR·EMmER VOLTAGE (VOLTSI
There are two limitations on the power handling ability of a
transistor: average junction temperature and secondary breakdown.
Safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation; e.g., the transistor
mU!lt not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitation. will reduce the
power that can be handled to values less than the limitations im·
posed by secondary br~akdown. .
.
4-423
MJ4502 (SILICON)
30 AMPERE
POWER TRANSISTOR
HIGH-POWER PNP SILICON TRANSISTOR
PNPSILICON
100 VOLTS
200 WATTS
· .. for use as an output device in complementary audio amplifiers
to 100-Watts music power per channel.
..
•
High DC Current Gain - hFE
•
Excellent Safe Operating Area
=25-100@ IC =7.5 A
• Complement to the NPN MJB02
MAXIMUM RATINGS
Rating
Coliector·Emitter Voltage
Coliector·Ba.. Voltage
Coliactor·Emitter Voltage
Emitter-Base Voltage
Collector CUrrant
Ba.. Currant
Total Daviee Dissipation@Tc = 25u C
Derate above 250 C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCER
VCB
VCEO
VEB
IC
IB
Po
100
100
90
4.0
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/oC
30
TJ, Tstg
7.5
200
1.14
-65 to +200
i2=~=:1'"
":
.L~
r ,<" • !
.
E SEATING
PLANE
,
D ;'
C,'
K
'
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to ease
STYLE 1:
PIN 1. BASE
2. EMITIER
CASE: COLLECTOR
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
200
i
............
150
~I'--
z
o
~
DIM
......
~
~ 100
.
~
... ~
...........
50
~
0
20
40
60
80
A
B
C 6.35
D 0.99
E
F 29.90
G 10.67
H 5.33
J 16.64
K 11.18
n 3.64
R
-
is
~
MILLIMETERS
MIN MAX
100
120
TC, CASE TEMPERATURE (OCI
140
'"
160
4-424
~
180
200
NOTE:
1. DIM "0"15 DIA.
INCHES
MIN .MAX
:. ... L550
39.37
0,830 )
21.08 '
7.62 0.250 0.300. '
1.09 . 0.039 ·0.043- .
. 0,135- .
3.43 -,
30.40 1.177 1.197
11.18 0.420 . 0.440
5.59 0.210 0.220
17.15 . 0:655' '0,675. :
12.19 0.440 '0.480
4.09 0.151 0.161
26,67
1.050
-
-
CASE 11-01
TO-3
... : . '
MJ4502
ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise notedl
Characteristic
Symbol
Min
Max
Unit
100
-
Vde
90
-
Vde
1.0
5.0
1.0
mAde
OFF CHARACTERISTICS
COllector-Emitter Breakdown Voltage 111
SVCER
(lc = 200 mAde, RSE = 100 Ohms)
Collector-Emitter Sustaining Voltage 111
VCEO(sus)
(I C • 200 mAde)
Collector-Base Cutoff Current
(VCS = 100 Vde, IE = 0)
(Vce = 100 Vdc, IE = 0, TC = lS0o C)
ICSO
Emitter-Base Cutoff Current
IEeO
-
hFE
25
100
-
VeE(on)
-
1.3
Vdc
ColJector-Em;tter Saturation Voltage
(lC = 7.5 Adc, IR = 0.75 Adcl
VCE(sat)
-
0.8
Vdc
Base-Emitter Saturation Voltage
(IC = 7.5 Adc, Ie = 0.75 Adc)
VeE (sa"
-
1.3
Vdc
mAde
(VeE = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS 111
DC Current Gain
(lc = 7.5 Adc, VCE = 2.0 Vdc)
Base-Emitter "On" Voltage
(lc = 7.5 Adc, VCE = 2.0 Vdc)
•
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
(lC
= 1.0 Adc, VCE
= 10 Vdc,! = 1.0 MHz)
111 Pulse Test: Pulse Width~ 300 Ils, Duty Cycle ~2.0%.
FIGURE 2 - DC CURRENT GAIN
FIGURE 3 -
2.0
I
1. B
'TJLJoJ
I.6
~
1.4
~
1.2
o
w
!2'
'" 1. 0
~
§; O. B
k o. 6
f'
11111
O.2
11111
o.4
~ 0.21-t-1r+H-tt-++t+-++-Iftttl--t-++HH-+++tIf"o,;~H-:
-
f-+-I+++++ Data shown is obtained from pulse tests. +-1+H4H--+~"'"
anj aliu~d tilUjlil1 if"ti! ICf~'
0.1.,='::7.LJ...L~-'-;:':-':~~,-,-,-!:'::-...L..::'::-'::"::-'-~~:';;-"--::'~
0.03
O.O~
.0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC. COLLECTOR CURRENT (AMP)
10
20 30
"olli" VOLTAGES
VUE(satl @lclluF 10
I--"
I/'
IL
L
VUE@VCE=2.0V
1 .1
VCE(sat! @lcIIB= 10
J.-0
0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC. COLLECTOR CURRENT (AMPI
10
20 30
FIGURE 4 - ACTIVE REGION SAFE OPERATING AREA
50
~ 20 I===t:=t:::j=t:=+=~++"::'tc
........
1.0;;;;-' 100",100• •
" ~.
~W
::::l
a
The Saf. Operating Area Curvn indicate Ie - Vee limits below
5.0 ms
5.0
=~I~: f:V::C7,:~ ~~u~~t~S::C;:t~a;{t:~t~=;ii~:!~~!
Area to avo!tI causing a catastrophic f.ilur.. To insure operation
~
below for
the both
maximum
power·temperature
derating must be obG 2.0 1-1---=I- ~'T~J+=~2~0~OO~C~'::;j=l==+=~++++t===l==l==t=:j::-~""S:;d==t~HR~ S8Ned
steadyTJ.
stata
and pulse power conditions.
BondhlgWire
Limited Limited ~~~i~~!~!~E'~!~I!III~
~ 0.51.0 F.
~--'-'
Breakdown
--:-- .Secondary
Thermal UmitationsTC =25 C
B
~
~,-~,~,
0
r-:-:- . Pulse Duty Cycle S 10%
0.2t::-=+=+++=+=I=H:t+=t==t=+=H~t=H=l=t+1
0,1 . Ll"".O---'''-''''''-2~.0:--L.:.3-:f.0::-......L--:5~.0,-l......J......L...J...1~0:---....L-:!:20:--.J....-:;3~0-...L..--;!;50:--''--J.....J~100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
4-425
MJ4645 '(SILICON)
thru
MJ4647
PNP SILICON POWER TRANSISTORS
designed for high-voltage amplifier and saturated switching
applications at collector currents to one Ampere. Ideally suited for
applications of dc-to-dc converters, relay and hammer drivers, motor
controls, and servo and pulse amplifiers. High-voltage ratings permit
direct-line operation.
•
•
Low Collector-Emitter Saturation Voltage 1.5 Vdc (Max) @ IC =500 mAdc
VCE(sat) =
•
High Collector-Emitter Breakdown Voltage BVCEO = 200, 300, and 400 Vdc (Min)
•
DC Current Gain Specified - 10 mAde to 500 mAde
1.0 AMPERE
POWER TRANSISTORS
PNP SILICON
200-300-400 VOLTS
5 WATTS
<
MAXIMUM RATINGS
R.tin,
Symbol
MJ4645
MJ4646
MJ4641
Unit
VCEO
200
300
400
Vdc
Collector·Base Voltage
Vca
200
300
400
Vdc
Emltter·Base Voltage
VEa
5,0
Vdc
Ie
0,5
10
Adc
Collector·Emltter Voltage
Collector Current - Continuous
Peak
Total Device DISSipation
Po
TC .. 25°C
@
Derate above 2SoC
Operating aDd Storage Junction
--
TJ.T stg
Temperature Range
5,0
Watts
28,6----
mwf'e
-65 to +200 - -
G
°e
STYLE 1
PIN 1. EM lITER
2. BASE
N
3, c(}LLECTO R
THERMAL CHARACTERISTICS
Characteristic:
Thermal Resistance, Junction to Case
FIGURE 1 - POWER DERATING
"'" "-
0
"-
0
"-
0
'"
f'.-
"
0
0
20
40
60
80
100
120
140
TC. CASE TEMPERATURE I'CI
MILLIMETERS
MIN MAX
8,89
9.40
8.00 B.51
6.10 6,60
0.406 0.533
0,229 3.18
0,406 0.483
5,33
.G
4.83
H
0.711 0,864
J
0.737 1.02
K 12.70
l
6.35
450 NOM
M
p
1.21
90 0 NOM
0
2.54
R
DIM
A
B
C
D
E
F
5.0
160
"'"
""
180
ZOO
4-426
INCHES
MIN
MAX
0.350 0,370
0.315 0.335
0,240 0,260
0,016 0.021
0.009 0.125
0.016 0.019
0.190 0.210
0.028 0.034
0.029 0,040
0,500
0.250
45 0 NOM
0.050
900 NOM
0.100
-
All JEDEC dimensions and.notesapply.
CASE 79-02
TO-39 -
MJ4645 thru MJ4647
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise notedl
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 10 mAde, IB = 0)
Vde
BVCEO
,
Collector-Base Breakdown Voltage
(lC = 100 "Ade, IE = 0)
-
200
300
400
-
200
300
400
-
-
-
-
BVEBO
5.0
-
-
Vde
ICEX
-
-
10
"Ade
20
-
-
25
-
-
20
-
-
-
0.5
0.6
0.75
1.0
1.2
1.5
40
30
-
-
-
-
80
60
td
-
ns
.-
-
100
tr
100
ns
toft
-
-
720
ns
MJ4645
MJ4646
MJ4647
-
-
-
Vde
BVCBO
MJ4645
MJ4646
MJ4647
Emitter-Base Breakdown Voltage
(IE = 100 "Ade, IC = 0)
Collector Cutoll Current
(VCE = 200 Vde, VBE(off) = 0.5 Vde)
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE = 10 Vde)
_.
hFE
(lC= 100 mAde, VCE = 10Vde)(1)
(lc = 500 mAde, VCE = 10Yde) (1)
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 100 mAde)
Vde
VCE(satl
MJ4645
MJ4646
MJ4647
-
,
DYNAMIC CHARACTERISTICS
Current-Gain -Bandwidth Product
MHz
IT
(lC = 70 mAde, VCE = 20 Vde, I = 20 MHz)
MJ4645, MJ4646
MJ4647,
Output Capacitance
pF
Cob
(VCB = 20 Vde,,IE = 0, I = 100 kHz)
MJ4645
MJ4646, MJ4647
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 100 Vde, IC = 500 mAde,
Rise Time
IBl = 50 mAde, VBE(ofl) = 5.0 Vde)
(VCC = 100 Vde, IC = 500 mAde,
Turn-Off
Time
IB 1 = IB2 = 50 mAde, Pulse Width
= 1.0,,5)
(1) Pulse Test: Pulse Width ~ 300 IJs. Duty Cycle ~ 2.0%.
FIGURE 2 - ACTIVE-REGiON SAFE OPERATING AREA
1.0
100",
0.7
0.5
ii:
~
5
...
~
1.Oms
5.0 m
O. 3
2 TJ· 200DC
O.
__1__ SE ONOARY
ITT
13 o.
7i--
~ ~:~5
8
D.D 3
:} 0.02
0.0 I
1.0
--
de
There are two limitations on the power handling ability of a
r,
.\
-r
20 30
VCE limits 01 the
transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.
The data 01 Figure 2 is based on T J(pk) = 2000 C; T C is
variable dependiQg on conditions. Second breakdown pulse limits
"
CU RVES APPL Y ~mt4645RATED BVCEO
MJ4646-
2.0 3.0 5.07.0 10
average junction temperature and second breakdown.
Sale operating area curves indicate IC -
\
BREAKDOWN LIMITED
BONDING WIRE
LIMITED
'THE'RMALLY lIMITED@
·IC· 25DC (SINGLE PULSEI
1J1111
transistor:
~IJ~~~7
50 70 100
are valid lor duty cycles to 10% provided T J(pk) EO; 200o C. At
high case temperatures, thermal limitations will reduce the power
"
r...:~
200 300 500
that can be handled to values less than the limitations imposed
by second breakdown. .
1000
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI
4-427
•
MJ6700 (SILICON)
7 AMPERE
POWER TRANSISTORS
PNPSILICON
MEDIUM-POWER PNP SILICON TRANSISTORS
· . . designed for switching and wide-band amplifier applications.
•
60 VOLTS
60 WATTS
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc
(Max) @ IC = 7.0 Adc
• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact. High Dissipation TO-59 Case
•
• Isolated Collector Configuration - 700 V Breakdown
MAXIMUM RATINGS
Symbol
_700
Unit
Collector-Emitter Voltage
VCEO
60
Vde
CoIlector-B ... Voltage
VCB
60
Vde
Emitter-Bose Voltage
VEB
5.0
Vde
Collector Current - Continuous
IC
7.0
Ade
a_Current
'B
1.0
Ado
Totat O..i<:. Dissipation" TC - 2SOC
Oorata above 2So C
Po
Rating
Operating end Storage Junction
Temperature Range
TJ. Tstg
60
Witts
343
mW/OC
~5to+200
Dc
~;.
~HLE1;
PIN 1. EMITTER
2. BASE
3. COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
FIGURE 1 - POWER-TEMPERATURE OERATING CURVE
DIM
60
.............
iii 50
B
C
E
..........
~
5
~ 40
z
G
.............
-0
S
iii 30
r--.....
~
is
'"~
20
~
el 0
0
20
40
60
80
H
J
K
L
N
100
120
140
P
............
Q
R
...........
S
I'-....
160
180
TC. CASE TEMPERATURE (OCI
Safe Area Curves are indicated by Figure 2. All limits are applicable and must be observed.
4-428
200
MILLIMETERS
MIN
MAX
10.77 11.10
8.13 11.89
2.29 3.81
4.70 5.46
1.98
10.16 11.56
14.48 19.38
2.29 2.79
6.35
4.14 4.80
1.02 1.65
8.08 9.65
4.212 4.310
9.65 11.10
INCHES
MIN
MAX
0.424
0.320
0.090
0.185
0.437
0.468
0.150
0.215
0.078
0.400 0.455
0.570 0.763
0.090 0.110
0.250
0.163 0.189
0.040 0.065
0.318 0.380
0.1658 0.1697
0.380 0.437
T
All JEOEC dimenSions and not.. apply
Collector isolated from case.
CASE 160-03
(TO-59)
MJ6700
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min
Max
60
-
-
100
-
10
/JAde
-
1.0
mAde
-
10
-
100
25
25
15
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage 111
(lC = 50 mAde, IB = 01
Vde
VCEO(susl
Collector Cutoff Cu rrent
(VCE = 55 Vdc,IB = 01
pAde
ICEO
'Colleetor Cutoff Current
(VCE = 55 Vde, VSE(off) = 1.5 Vdel
ICEX
(VCE = 55 Vde, VSE(off) = 1.5 Vdc, TC = 1500 CI
Collector Cutoff Current
(VCB = 60Vdc,IE = 0)
ICSO
Emitter Cutoff Current
(VEB = 5.0 Vdc, Ir. = 01
IESO
pAdc
/JAde
ON CHARACTERISTICS III
DC Current Gain
(lC = 500 mAde, VCE = 2.0 Vdcl
(lC = 2.0 Ade, VCE = 2.0 Vdel
(lC = 5.0 Adc, VCE = 2.0 Vdel
hFE
Collector-Emitter Saturation Voltage
(lc = 2.0 Adc, IS = 0.2 Adel
(lC = 7.0 Adc, IS = 0.7 Adcl
VCE(satl
Base·Emitter Saturation Voltage
(lC = 2.0 Adc, IS = 0.2 Adcl
(lC = 7.0 Adc, IB = 0.7 Adcl
VBE(satl
-
180
Vde
-
0.7
1.2
-
1.2
2.0
30
-
-
300
-
1250
-
100
ns
1.0
/Js
150
!ily
-
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain·Bandwidth Product
(lC = SOO mAde, VCE = 10 Vdc, f = 10 MHzI
MHz
fT
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHzl
Cob
I nput Capacitance
(VSE = 2.0 Vde, IC = 0, f = 100 kHzl
Cib
pF
pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 40 Vdc, VSE(offl =',£<0 Vde,
Rise Time
ld
IC=2.0Adc,ISl = 200 mAde 1
Storage Time
(VCC = 40 Vdc, IC = 2.0 Ade,
Fall Time
tr
IBl = 182= 200mAdcl
IU 'Pulse Test: Pulse Width
= 300 J,ls,
If
FIGURE 2 - ACTIVe·REGION SAF£ OPERATING AREA
~
...z
The Safe Operating Area Curves
indicate IC-VCE limits below
which the device will not enter
secondary breakdown. Collec·
tor load lines for specific circuits
must fall within tho applicable
Safe Area to avoid causing a
catastrophic failure. To insure
100/-1$
2.a
a
1.0ms
B D.5
~
d,
~
O. 2-f-TJ'2000C
j
0
--===SECONOARY BREAKDOWN LIMITED -
.1 ~---BONOING WIRE LIMITED
800
5
APPLY 'ELOIY RATED VCEO
5.0 ms
operation below the maximum
~~~RVES
0.0 1
lO
TJ, power·temperature derating
must be observed tor bolh steady
state and pulse power conditions.
MU67
00 2
2.0
3.0
5.0 7.0
10
ns
Duty Cycle = 2.0%
a
5. a
ii!
-
10
,
100
20
30
50
10
100
FIGURE 3 - SWITCHING TIME TEST CIRCUIT
INPUT PULSE
1----+,0".
r
OV-,
+11.6 V
-37V---L-J
25j.1F
~
151
Ir,lf~10~S
D.C.-2.0%
_
+3.3 V
VeE. COLLECTOR-EMITTER VOl. TAGE (VOLTSI
4-429
•
MJ81 00' (SILICON)
5 AMPERE
POWER TRANSISTORS
MEDIUM-POWER PNP SILICON TRANSISTORS
. designed for switching and wide band amplifier applications.
PNP SILICON
• Low Collector-Emitter Saturation Voltage -VCE(sat) = 1.2 Vdc (Max) @ IC = 5.0 Amp
..
60 VOLTS
10 WATTS
• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact TO-39 Case for Critical Space-Limited
Applications.
MAXIMUM RATINGS
Symbol
Value
Unit
VCFn
60
Vdc
Collector-ease Voltage
VCR
60
Vdc
Emitter-aa.. Voltage
VI;Jt
5.0
Vdc
IC
5.0
Adc
Roling
Collector-Emitter Voltage
Collector Current - Continuous
aase Current
Total Device Dissipation
Derate above 25°C
@
la
1.0
Adc
Po
10
57.2
Watts
mW/oC
TJ.Tstg
-65 to +200
°c
T C = 25°C
Operating and Storage Junction
Temperature Range
.~1J~'~r:\
re-
SEATING
PLANE
THERMAL CHARACTERISTICS
---=f1l
~K
II
~
--u-o ISTYLE 1
..---I
PIN 1. EMIITER
/'
I
2. BASE
3. COLLECTOR
Q
Characteristic
N
Thermal Resistance. Junction to Case
FIGURE 1 -- POWER-TEMPERATURE DERATING CURVE
0
~
........
8, 0
~
'"~ 6.0
gj
~ 4.0
""
K
~
E 2.0
0
•
"."
'" ""
MILLIMETERS
INCHES
MIN MAX 'MIN
MAX
8.89 9.40
0.350 0.370
8.110 8.51
0:315 0.335
6.10 6.60
0.240 0.260
0.406 0.533 0.016 '0.021
0.009 0.125
0.229 3.18
0.406 0.483 0.016 0.019
4.83 5.33
0.190 0.210
0.711 0.864 0.028 0.034
J
0.737 1.02
0.029 0.040
K 12.70
0.500
L
6.35
- 0.250 M
45 0 NOM
45 0 NOM
p
1.27
0.050
Q
. 900 NOM
90 0 NOM
R
2.54
- 0.100 All JEDEC dimenSions and notes apply.
CASE 79·.02 ' . ; ' ....
TO-39
DIM
A
8
C
D
E
F
G
H
r-....
'-..
'"
m
~
~, ~
~
~
~
Te. CASE TEMPERATURE (OCI
Sift ArtI CutvlS Irt indiCltId by Figul1l 2. Alilimitl . . IPpliclbJl Ind must be observed.
4-430
-
MJ81 00
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Min
Max
60
-
-
100
-
10
"Ade
-
1.0
mAde
-
10
-
100
25
25
15
lBO
-
0.7
1.2
-
-
1.2
I.B
30
-
-
300
-
1250
td
-
100
tr
-
100
ns
-
1.0
"S
Symbol
Characteristic
Unit
OFF CHARACTERISTICS
Collector.Emitter Sustaining Voltage 111
Vde
VCEO(suSI
(lc = 50 mAde, IB = 01
Collector Cutoff Current
"A de
ICEO
(VCE = 55 Vde,IB = 0)
Collector Cutoll Current
(VCE = 55 Vde, VBE(oll) = 1.5 Vdel
ICEX
(VCE = 55 Vde, VBE(oll) = 1.5 Vde, TC = 1500 CI
Collector Cutoll Current
(VCB=60V,IE=01
ICBO
Emitter Cutoff Current
lEBO
"Ade
"Ade
(VBE = 5.0 Vde, IC = 01
ON CHARACTERISTICS 111
-
DC Current Gain
(lc = 500 mAde, VCE = 2.0 Vdel
(lC = 2.0 Ade, VCE = 2.0 Vdel
(lc = 5.0 Ade, VCE = 2.0 Vdel
hFE
Collector-Emitter Saturation Voltage
(IC = 2.0 Ade, IB = 0.2 Adc)
(lc = 5.0Ade,IB = 0.5 Ade)
VCE(satl
Base·Emitter Saturation Voltage
(lC = 2.0 Adc, IB - 0.2 Adcl
(lC = 5.0 Ade, IB = 0.5 Adc)
VSE(satl
Vde
Vde
DYNAMIC CHARACTERISTICS
Current·Gain - Bandwidth Product
(lC = 0.5 Adc, VCE
IT
= 10 Vde, I = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, I = 100kHz)
Cob
Input Capacitance
(VSE = 2.0 Vde, IC
Cib
=0, I = 100 kHzl
MHz
pF
pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 40 Vdc, VBE (off) ='4.0 Vde,
AiseTime
IC
Storage Time
(VCC = 40 Vdc, IC = 2.0 Adc,
Is
Fall Time
IBI = IB2 = 0.2 Adc)
tl
~
2.0 Adc,lBl
D
0.2 Adc)
150
ns
ns
111 Puis. Test: Pulse Width :5: 300 "s, Duty Cycle :5: 2.0%
FIGURE 2 - ACTIVE·REGION SAFE OPERATING AREA
FIGURE 3 - SWITCHING TIME TEST CIRCUIT
10
lDOIIS
5.0
The Sale Operating Area Curvas
indicate IC-VCE limits below
which the device will not enter
secondary breakdown. Collec·
tor load lines for specific circuits
must fall within the applicable
Safe Area to avoid causing a
~.Oms
...
~
1.11
I.Oms
:::: 0.5
I- TJ. 200'C
~
J=~:~~~~i~~~::~~: Limited I
0.2
de
catastrophic failure. To insure
operation below the maximum
~ 0.1 ~---- "T.~lrm~llimit~tiol1$ :
0.05 1=
,iIc.= ?50~ .
.
~
AppJicabJe For Rated BYCE
0.02
"Pulse Duty Cycle" 10%
8
0.01
1.0
2.0 3.0
5.0
10
20
30
50
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTSI
TJ, power·temperature derating
must be observed for both steedy
state and pulse power conditions.
INPUT PULSE
1----+10".
OV-,
r
-37V---L-J
251'F
~
tr,tf~10~'
D.C. - 2.0%
100
4-431
+11.6 V
151
-=
+3.3 V
•
MJI0000
MJI0001
Designers Data Sheet
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
•
350 and 400 VO LTS
175 WATTS
The MJ10000 and MJ10001 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line
· operated switch-mode applications such as:
•
•
•
•
•
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits. the design of most' circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries -
~
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
lli
lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads 210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
~100
"'15
are given to facilitate Hworst case"
design.
6
·~~·"'
. ..
l~"'
r
..•
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
- Peak (1)
Base Current - Continuous
- Peak (1)
Total Power Dissipation@TC = 250 C
!" TC = 1000 C
Derate above 25°C
Operating and Storage Junction
Symbol
VCEO(sus)
VCEX(sus)
VCEV
VEa
IC
ICM
la
laM
Po
MJ10000
350
400
450
MJ10001
400
450
500
a
20
30
2.5
5
175
100
1
-65 to +200
TJ,TstQ
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Maximum Lead Temperature for Soldering
'.
K
f ,
PIN I. BA~E:'
2. EMITTER
CASE:'COLlECTOR
Watts
W/oC
°c
"._,
....
MILLIMETERS
INCHES
DIM MIN' MAX 'MIN
MAX
'THERMAL CHARACTERISTICS
Characteristic
.0
Adc
Temperature Range
Thermal Resistance. Junction to Case
E SEATING
PLANE
C..
Symbol
RSJC
TL
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cvcle .. 10%.
Max
1
275
,
Unit
°C/W
DC
A
B
C
0
E
-
6.35
0.99 '
-
F 29.90
G 10.67
39.37:
21.0B
7.62
.1.09
3.43"
30.411
11.18'
'
-
1.550
0,830
0.300
0,043
- 0,1 5
1.177 1.197
0.420 '0,440
'0.250
0.039
5.
5.59 0.21
0.220
J 16.
17.15 0.655 0,675
'0,480
K II.IB
12.19 O.
Q
3.84
4.09 0.151 0.161
26.67 . R
1.050
ColiectorconMctedtoc•.
H
-
CASE 11-01
TO-3
,
4-432
-,
'
:
MJ10000, MJ10001
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise notedl.
Characteristic
Symbol
OFF CHARACTERISTICS (2)
Collector~Emitter Sustaining Voltage (Table 1)
VCEO(sus)
MJ10000
(lc = 250 mA.le = O. Vcl amp = Rated VCEO)
MJ1000l
I
I
Collector-Emitter Sustaining Voltage (Table 1, Figure 12)
IC
MJ10000
MJ1000l
IC = 10 A. Vcl amp = Rated VCEX. TC = 100°C MJ10000
MJ1000l .
Collector Cutoff Current
ICEV
= Rated Value. VSE(off) = 1.5 Vdc)
= Rated Value. VSE(off) = 1.5 Vdc. TC = 150°C)
Collector Cutoff Current
(Vce
ICE.R
= Rated VCEV, RaE = 50 n, TC = 100°C)
Emitter Cutoff Current
(VES =8 Vde, IC
Typ
Max
350
400
-
-
400
450
275
325
-
-
-
-
0.25
5
5
mAdc
-
150
mAdc
-
leao
=0)
Unit
Vd~
Vde
VCEX(sus)
= 2 A. Vel amp = Rated VCEX. TC = 100°C
(VCEV
(Vcev
Min
-
mAdc
-
-
SECOND SREAKOOWN
See Figure 11
Second Breakdown Collector Current with base forward biased
ON CHARACTERISTICS (2)
DC Current Gain
Collector-Emitter Saturation Voltage
(lC = 10 Ade, la
(lC = 20 Adc, IS
(lC = 10 Ade, la
-
hFE
(lc ~ 5 Ade, VCE = 5 Vdc)
(lc = 10 Ade, Vce = 5 Vde)
VCE(satl
= 400 mAde)
= 1 Adc)
=400 mAdc, TC = 100°C)
-
600
400
-
-
Vde
-
-
1.9
3
2
-
2.5
2.5
Vf
-
3
5
Ihfe l
10
-
Base-Emitter Saturation Voltage
(lc = 10 Adc. la = 400 mAdc)
(lC = 10 Ade, la = 400 mAde, TC
Diode Forward Voltage (1)
(IF = 10 Ade)
50
40
VSE(sat)
= 100°C)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lC = 1.0 Adc, VCE = 10 Vdc, f test = 1 MHz)
Output Capacitance
Cob
(Vca = 10 Vdc, IE = 0, f test = 100 kHz)
Vde
Vde
-
-
325
pF
0.12
0.20
1.5
1.1
0.2
0.6
3.5
2.4
I'S
I'S
3.5
1.5
6.5
3.7
1'.
1.0
-
I'S
100
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load.
Storage Ti,me
Crossover (Time
Storage Time
Crossover ,T,i,me
(1) The
(VCC =' 250 Vdc, IC = 10 A,
lSI = 400 mA, VSE(off) = 5 Vdc. tp = 50 I's,
Duty Cycle .. 2%1.
'd
tr
ts
tf
Clamp~d..ITable
1)
(lC =.10 A(pk), Vel amp = Rated VCEX, lal = 400 mA,
VSEloff) = 6 Vdc, TC = 100°C)
tsv
te
(lC = 10 Alpk), Vcl amp = Rated VCEX, 181 = 400 mA,
. 'VSEloff) = 6 Vdc, TC = 25°C)
tsv
te
..
-'
-
0.7
int~~fial··COliecto~.tt;) ..Emitter diode can eliminate the need for an external diode to clamp irytuctive loads.
Te.ts have shown that. the Forward Recovery Voltage IVf) of this diode is comparable to that of typical fast
recovery rectifiers. .
(2) Pulse T,;;t:.Pulse Widtli'~ 300 "s, Duty Cycle .. 2%.
4-433
-
1'.
1'.
I'S
"s
MJ10000, MJ10001
DC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
-
SOO
TJ = ISOoC
300
200
2!
;;:
a-
""
'"
100
~
ffi 10
~ 50
13
g
30
$
20
IC = SA
0.2 0.3
r-
8
V~E = 5)'
0.5 0.7
1\
1\
4
I
10
S
1
0.02
20
0.03
/
~c
/1
//J
'/
-..:-e . . .
TJ = -550 C
--
O.8
-
0.4
0.2
0.3
0.5 0.7
-
~
'"~
t5
1.6
>
1. 2
O.8
0.2
2S oC
-::-:: -r
2StC
--
-f
0.3
~VCE=2S0V
c
~
~
10 I
!J
100
20
TJ = 2S oC
/
t-- TJ = maC
102
10
O.S 0.7
IC. COLLECTOR CURRENT (AMP)
70 0
./
~
a:
./
100 0
1103
::1
13
-/
~
FIGURE 6 - OUTPUT CAPACITANCE
FIGURE 5 - COLLECTOR CUTOFF REGION
ill
/./
.J..:- i--
-ifooc
20
/.
/ ' 4-
)J = Jsoc
IC. COLLECTOR CURRENT (AMP)
104
1
I
~:~\~~I: U:~~B:l~
-j I
2
,,:
10
-
0.2 0.3
0.5 0.7
0.1
lB. BASE CUR RENT (AMP)
=
w
25 0 C ....
'\
II II
2.4f-- f -
ICIIB = 2S
6
20A
i'..
0.05 0.07
2.8
I II
I II
\: 15A
TJ" 25 0 C
FIGURE 4 - BASE-EMITTER VOLTAGE
FIGURE 3 - COLLECTOR EMMITTER SATURATION VOLTAGES
2
\
\
\
\
IC. COLLECTOR CURRENT (AMP)
2.4
\
\ IDA
2
I
1/
1\
\
'\.
I--
./
\
6
250 C
-5SoC
10
7
5
. I
f-
t-- t- 'OOOC
t-- r-15oC
/
,
0
t-.....
0
,
0
c....
f'
.......
0
i== F25 0 C
10-1
-0.2
+0.2
+0.4
+0.6
VBE. BASE·EMITTER VOLTAGE (VOLTS)
"
Cob
0
S0
0.4 0.6
+O.B
4-434
1
4 6 10
20
40 60
VR. REVERSE VOLTAGE (VOLTS)
100
1=
200
400
MJ10000, MJ10001
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOlsusl
RESISTIVE
SWITCHING
VCEX($usl AND INDUCTIVE SWITCHING
en
01
Z
.... 0
2N29D7
Q2 2N2222
~E
Pulse Width
ZO
03 2N3762
adjusted to
-z
obtain epacifled
Ie (Rosiuive
Switchiag,
Pulse Width
8
PW Varied ,to Attain
Ie'" 250mA
A.
MJE210
a.
MJE2DO
01
1N914
02 lN914
- 50 III)
03 lN914
5~
o
U -'
~
Leoil = 180 JoIH
Leoll'" 10 mH Vee" 10 V
Reoll- 0.7 n
Vclamp " VCEOhuI)
~~od': ~8~ n
INDUCTIVE rEST CIRCUIT
Vel
amp
= Rated VCEX Value
VCC- 250V
RL" 26 n
Pulle Width" 60 III
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
t1 AdJulted 10
Obtain Ie
l
Ie
I Reoll
I
I Leol!
Soo Above For
Detailed Conditions
VeE
0.1
TOlt EquJpmont
Scopo-Toktronlx
475 or Equlvalont
n
SWITCHING TIMES NOTE
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
Ie
90% Vcl ampI
100-
-
I~!90% Ie
amp Vcl'-j'
Irvlfl~lli"'" l"l-Ili-
-Isv
r-1f-Ic-\I-e
/
Vclamp
l a . - I--
,90%
IBI
-- --\- -\
"
I'\.
10% ......
10%
vclamp- l e -
Y
- .- --- -- -
-
f.-'""'"
~
Ie
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
suppl ies and hammer drivers, current and voltage wave'
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For ttiis reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% Vclamp
trY = Voltage Rise Time, 10-90% Vclamp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% Ie
An enlarged portion of the turn-off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.
TIME
4-435
MJ10000, MJ10001
J
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN·222:
PSWT = 1/2 VCCIC(tc! f
In general, trY + tfi "" tc' However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2SOC and has become a benchmark
for designers. However, for'designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCH MODE" transistor are the inductive
switching speeds hc and t sv ) which are guaranteed at
100oC.
•
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN-OFF TIME
FIGURE 8 - TURN-ON TIME
2
-V~EIOff) ~ 5 V
.,.
~
w
----
1
o.7~
.3 0.5
0.7
]
~d
:E
w
.; 0.3
--...;:::
0.2
0.5
:E
~
;:::
-
i..;;-
VCc·250V
1 - IC/IB' 2S
TJ=2SoC
~
y
-....:::
;:::
./
./
0.1
20
/'1
V
0.2
O. 1
.?
./
0.3
....
10
"
~
I-
VBEloH) =SV
VCC=250V
IC/IB=2S_
I
V
T.
/
TJ=~SOC
10
1
20
IC, COLLECTOR CURRENT lAMP)
IC, COLLECTOR CURRENT lAMP)
111_ _ __
FIGURE 10 - THERMAL RESPONSE
w
u
0.7
0.50=0.5
~
~
e
~'o
c ...
:: g; 0.07~
f5
~
~
""
11 tnn
0.2
0.1
_
:EN
~~
~
0.2
.....
_1--
0.1
O.OS
0.03~ 0.02
0.021--"~t0.01 ....... 1-"1
SI7G~E r~Lr~
0.02
Plpk)
--f 111--- I
!. 0.05
0.01
-=
O.OS
~'2--1
'""'"
0.1
ZtIJCIt) • ,II) RuC
ROJC" l oCm M,x
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT II
TJlpk) - TC' Plpk).ZOJCII)
DUTY CYCLE, D' 11/12
11111
0.2
10
O.S
I,TIMElmsl
4-436
I
I
20
1'1 I I I III
50
'" 100
I
I
200
I
I I I II
500
1.Ok
MJ10000, MJ1000l
SAFE OPERATING AREA INFORMATION
The Safe Oporating Aroa figures shown in Figures 11 Dnd 12 :lrD
spocifiad rating! for tho:sB dovicos undor tho tost conditions sho'lln.
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 250 C; TJ(pkl
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown Iimitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve on
Figure 13.
TJ(pkl may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second ·breakdown.
FIGURE II - FORWARD BIAS SAFE OPERATING AREA
50
10 ~~
IOO"~
20
~
'"
10
5
!
2
$
>-
I
oc 0.5
'"
~
'"
1m.
5~S
0.2
0.1
=. -
'" 0.05
~
0.02
0.01
0.005
4
TC = 250C
- BONDING WIRE LIMITED
THERMALLY LIMITED .
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATEO VCEO
t=:dC
MJIOOO~~
MJIOOOI
6
20
10
40
60
100
200
350
400
VCE. COLLECTOR·EMITIER VOLTAGE IVOLTS)
FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA
20
'"
1
$
>-
REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX (sus) at a given
collector current and represents a voltage·current condition that can be sustained during reverse biased turn·off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.
~
TURN OFF LOAD LINE
BOUNOARY FOR MJIOOOI
THE LOCUS Fon MJIOOOO
-
"-['-.,.
300
400
200
100
VCE, COLLECTOR·EMITIER VOLTAGE IVOLTS)
500
FIGURE 13 - POWER DERATING
100
~ t-...
'""
............
§! 80
oc
Q
t;
~ 60
...... r-....
THERMA~
OERATING
'"==
!.i
~
SEJOND OAEAKO~WN_
DERATING
r--....
"
ffi40
Q
........
............
......
oc
~
~ 20
o
o
......
.......
"40
120
BD
TC. CAse TEMPERATU HE 1°C)
4-437
160
"
200
MJI0002
MJI0003
10 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
350 and 400 VOLTS
150 WATTS
The MJ 10002 and MJ 10003 darl ington transistors are designed
for high·voltage, high·speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line
operated switch·mode applications such as:
Designer's Data for
"Worst Case" Conditions
o Switching Regulators
o. I nv~rters
.. Solenoid and Relay Drivers
The Designers Data Sheet per·
mits the design of most circuits.
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facil itate "worst case"
design.
o Motor Controls
o Deflection Circuits
1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads140 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Symbol
Ratina
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
-Peak (II
Base Current - Continuous
- Peak (II
Total Power Dissipation @ T C ::: 2SoC
@TC
= 100°C
Derate above 2SoC
Operating and Storage Junction
Temperature Range
MJIOO02
MJIOO03
400
350
VCEO(susl
450
400
VCEX(susl .
500
450
VCEV
VEB
8
10
IC
20
ICM
2.5
IB
5
IRM'
150
Po
100
0.86
-65 to +200
TJ,T stg
Unit
Vdc
Vdc
Vdc
Vdc
Adc
PLANE
Watts
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
W/oC
°c
MILLIMETERS
DIM
Symbol
Thermal Resistance. Junction to Case
ROJC
Maximum Lea~ -r;emperature for Soldering
"TL
M..
1.17
275
Purposes: l/S" from Case for 5 Seconds
(II Pulse Test: Pulse Width
ESEATIN(~
Adc
THERMAL CHARACTERISTICS
Characteristic
lr~
r~K
Unit
°C/W
°c
MIN
MAX
A
B
-
C
6.35
0.99
39.37
21.oB
7.62
1.09
3.43
30.40
11.18
5.59
0
E
-
F 29.90
G 10.67
H
5.33
J 16.64
K II.IB
Q
3.B4
R
-
= 5 ms, Duty Cycle .. 10%.
11.15
12.19
4.09
26.67
INCHES
MIN
MAX
-
0.250
0.039
-
1,171
0.420
0.210
0.655
0.440
0.151
-
Co"ectofconnected to case.
CASE 11·01
TO·J
4-438
1.550
0.B30
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.11
1.050
\
MJ10002, MJ10003
ELECTRICAL CHARACTERISTICS
I
(TC' 2S oC unless otherwise noted/.
I
Charact.ristic
Min
Typ
Max
350
400
-
-
400
450
275
325
-
-
-
-
-
0.25
5
ICER
-
-
5
mAde
IEeO
-
-
175
mAde
Symbol
Unit
OFF CHARACTERISTICS (2)
Collector-Emitter Sustaining Voltage (Table 11
(lC = 250 mA.le· O. Vel amp
= Rated VCEO)
Collector-Emitter Sustaining Voltage !Table 1, Figure 121
(lC
= 1 A. Vclamp
• Rated VCEX. TC' 100oC)
(lc
= 5 A. Vel amp
• Rated VCEX. TC = 100oC)
MJ10002
MJ10003
MJ10002
MJ10003
ICEV
(VCEV = Rated Value. veE (off) • 1.5 Vde)
(VCEV ~ Rated Value. VeE(off) = 1.5 Vde. TC = 150°C)
Collector Cutoff Current
= Rated VCEV. ReE = 50 n. TC = 100°C)
Emitter Cutoft Current
(VEe = e Vde. IC
-
Vde
VCEX(sus)
Collector Cutoff Current
(VCE
Vdc
VCEO(sus)
MJ10002
MJ10003
= 0)
mAde
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
See Figure 11
ON CHARACTERISTICS (2)
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
-
500
300
-
-
1.9
2.9
2
-
-
2.5
2.5
VI
-
3
5
I hfe 1
10
-
-
Cob
60
td
-
VCE(sat)
=
(lC' 5 Ade. Ie 250 mAde)
(lc 10 Ade. IS = lAde)
(lC = 5 Ade. Ie = 250 mAde. TC = 10oDC)
=
Base-Emitter Saturation Voltage
-
40
30
(lc = 2.5 Ade. VCE • 5 Vde)
(lC = 5 Ade. VCE = 5 Vde)
Vde
Vde
VeE(,at)
(lC = 5 Ade. IS = 250 mAde)
(lC = 5 Ade. Ie = 250 mAde. TC = 100oC)
Diode Forward Volt.ge (1)
(IF =5.0 Ade)
Vde
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
-
(lC'l Ade. VCE = 10 Vde. f test = I MHz)
Output Capacitance
(Vce =50 Vde.IE· O. f test = laO kHz)
275
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
(VCC· 250 Vde. IC = 5 A.
leI = 250 mAo VBE(olf) = 5 Vde. tp = 50
Dutv Cycle .. 2.0%).
"S.
Fall Time
tr
ts
tf
-
0.05
0.2
"s
0.25
0.6
"s
1.2
3.0
"s
0.6
1.5
"s
"s
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
(lC =5 A(pk). Velamp = Rated VCEX. IBl = 250 mAo
VSE(ofl) = 5 Vde. TC = 100°C)
tsv
(lC =5 A(pk). Vel amp = Rated VCEX.IBl = 250 mAo
VeE(off) = 5 Vdc. TC = 2S0C)
tsv
te
te
-
2.1
5
-
1.3
3.3
"s
-
0.92
-
".
0.5
(1)
The internal Collector-to-Emitter diode can eliminllte the need for an external diode to clamp inductive loads.
Tests have shown'that the Forward Recovery Voltage IVf) of this diode is comparable to that of typical
fast recovery rectifiers.
(2)
Pulse Test: Pulse Width = 300
"S. Duty Cycle';; 2%.
4-439
"s
MJ10002, MJ10003
DC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
30 0
TJ
200
I--
10 O
z
;{ 70
... S0
~
~ 3,4
ISO'C
e2S~C
w
'"~
">ffi
'"
..
ffi
~I 0
-
./
~ 20
"..J
......
/
~ 30
./
7
S
-SS'C
I-
15
"'~"
I
0.1
2.6
2S'C
IC"0.3A- 2.S A
SA
'IDA
2.2
"-
a
1.4
......
~
0.2
0.3
7
O.S 0.7
10
20
10
30
SO
IC. COLLECTOR CURRENT (AMP)
-
f-
~
~ io
"w~
-r
~
./
ffi
t::
~
/./
~
.~
2.4
_....
1. 6
1.2
t::::=
TJ ~ 12S'C
~
Ik
10
t....-- v
O.B
0.1
t
II
II
1/
//
2S°;..-
I:::::
,
2SoC
/
..,
./
1- . /
--
i--
IS00C
II
0.2
O.S 0_7
0_3
10
IC. COLLECTOR CURRENT (AMP)
FIGURE 6 - OUTPUT CAPACITANCE
FIGURE 5 - COLLECTOR CUT-OFF REGION
F=
SOD 700
/
IIII
TJ" -SS'C
>
0.3
O.S 0.7
IC. COLLECTOR CURRENT (AMP)
VCE ~250v
300
.1,1 U.I.. IT
W
/
~
I
0.2
200
VBE{"tI@ IC/la" 10
VBE{,n) @VCE ~ S V
---
">-
,/
TJ ~ -SS'5,...-
2S'~
-
'"
~
1/
6
100
FIGURE 4 - BASE-EMITTER VOLTAGE
2. a
ICIIIB
70
lB. BASE CURRENT (mAl
FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE
~1O
... 2
~
> 0,6
3
103
TJ
I
8
VCE ~ S V
n
I"
I
"2:-
40
0'1--.
TJ" 2SoC
~
0
100'C
fl
~.10 I
7S'C
Cob
~
0
"~10 o~REVERSE
0
FORWARO
0
2S'C
10- I
-0_2
r-
40
+0.2
+0.4
+0.6
+O.B
VBE. BASE-EMITTER VOLTAGE (VOLTS)
0.1 0.2
0_5
1
10
20
SO
100 200
VR. REVERSE VOLTAGE (VOLTS)
4-440
500 1000
MJ 10002, MJ 10003
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEO(susl
.
Pulse :!1V
Z
... 0
Width
::>>=
a.ZO
-z
o
~ ~
a'
~~I
Leoit" 10 mH
Rcoll'" 0.7 n
Vee"
2N2907
02 2N2222
03 2N3762
obtain spaclfied
04 MJE210
Ie (Resistive
SwitChing,
as
MJE200
Pulse Width
... 50,us)
0,
lN914
02
lN914
03
lN914
PW Varied to Attain
Ie" 250 rnA
CJ....I
--.L_J''>-'-~I
Pulse Width
adjusted to
"
5~
RESISTIVE
SWITCHING
VCEXlsusl AND INDUCTIVE SWITCHING
Lcoll'" 180 pH
10 V
~~OC': ~g~ n
Vcl amp " VCEO(sus)
Vee = 250 V
RL'" 50 n
Vclamp = Rated VCEX Value
Pulse Width = 50/011
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
RESISTIVE TeST CIRCUIT
t1 Adjusted to
Obtain
tf Clamped
Ie
~
3
rr
"
~~__~~_~~~
U
5
~
Lead (ICpk)
tl~
Vee
I Leol!
See Above For
Deta,led Conditions
Test Equipment
Scope-Tektronix
475 or Equivaient
0., n
SWITCHING TIMES NOTE
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
r-I
Ie
~
90% Vclamp
90% Ie
I
Vclamp -
.rvfl/lJt'fi-OOI-••i--
f- f--tsv
----J,f-.c-\ I-
/
Vclamp
'8-
'e
tf Unclamped "" t2
/
-
90% 181
-- --\- -- ----
-
~
"-
TIME
'"
10% ........
10%
V,'.mp- l e - t"i%~
Ie
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current,and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10-90% Vclamp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
. tc = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the turn·off waveforms is snown in
Figure 7 to aid in the visual identity of these terms.
4-441
MJ10002, MJ10003
SWITCHING TIME NOTES (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-222:
PSWT ~ 112 Vecle(tc! f
In general, trv + tfi "" tc' However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2!Pe and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (t c and t sv ) which are guaranteed at
•
lOOoe.
RESISTIVE SWn'CHING PERFORMANCE
FIGURE 9 - TURN-OFF TIME
FIGURE 8 - TURN-ON TIME
1
O. 7
O. 5 -
-
O. 3 -
10
.t
VCC" 250 V
IB1" 250 mA
TJ "25°C
..:,
-
O. 2
]
~
'r
O. 1
S 0.0 7
-
-- -
0.0 5
0.0 3
0.0 2
0.0 1
0.1
0.2
0.3
0.5 0.7
1/
0.7
0.5
Id
0.3
"-
·0.2
O. I
0.1
10
1
0.2
0.3
--
'1
0.5
VBElolfI- 5 v
VCC "250 V
IBI c250mA
TJ - 25°C
10
0.7
IC. COLLECTOR GURRENT lAMP!
IC. COLLECTOR CURRENT lAMP!
FIGURE 10 - THERMAL RESPONSE
1
«
~_
wO
IW
O. 7 =0 "0.5
>--~
O. 3== 0.2
",0
01
I-
~
~ ~ o. 2 I---
«z
ROJCI'! " rlt} ROJC
ROJCII! " 1 17 0C/W Max
o. 5
~; O.
t-
f--- 1-10--
1F==:O
05
0.0
-« 7~0.02
~ 0.0 5
>
o CURVES APPLY FOR POWER
---
....
PULSE TRAIN SHOWN
REAO TIME AlII
TJlpk! TC" P(pk! RoJCII!
2
g
~ ~o.o 3~
..-K:
PtrLfL
0.01
t~-J
0.0 21--- SINGLE PULSE
00 1
0.01
III
. 0.02 0.03
OUTY CYCLE. 0" 1)/12
0.05
0.1
0.2
0.3
10
0.5
\
I. TIME 1m,!
4-442
20
30
50
100
200
300
500
1000
MJ10002, MJ'i0003
figur~s
Tho Safe Operating Area
shown in Figuros 11 and 12 aro
SAFE OPERATING AREA INFORMATION
specified ratings for those dovicos under tho test conditions shown.
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: junction temperature and second breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
FIGURE 11 -·ACTIVE·REGION SAFE OPERATING AREA
a
ii'!
~
100",-
5
m,
...
TC ~ 25 0C
~
a
~ 0.5
g
_
0.2
8
O. I
~
,
10"
10
r---
I ms
- -
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
---SECOND BREAKDOWN LIMIT
The data of Figure 11 IS based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;, 25°C. Second· breakdown limitations
do not derate the same as thermal limitations. Allowable
. current at the voltages shown on Figure 11 may be found
\ at any case temperature by uSing the appropriate curve on
Figure 13_
TJ(pk) may be calculated from the data In Figure 10.
At high case temperatures. thermal limitations will reduce
the power that can be handled to valups less than the
\.
" "'
0.05
002
4
operation; I.e., the transistor must not be subjected to
gr~ater diSSipation than the curves indicate.
"
de
MJIOO02~
S
20
10
40
60
lOa
MJ10003
200
=
,I
350
400
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
limitations Imposed by second breakdown.
FIGURE 12 - REVERSE BIASEO SWITCHING
SAFE OPERATING AREA
a
~
TU RN OFF LOAD LINE
BOUNDARY FOR MJIOO03
THE LOCUS FOR MJIOO02
IS 50 V LESS
I
REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
Thi.s can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as V CEX (sus) at a given
collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.
I
l\
I\\.- -
TJ" IOOoC
VBE(off) ~ 5 V
l'tt - VBE(off)
It'\'.-- VBE(off)
\ ."'"
\
o
a
"'"
'"
300
400
200
100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
~ 2V
~
aV
500
FIGURE 13 - POWER DERATING
10a
~ :-....
.............
~ 80
'"
"- SO
OERATING
'"z·
>=
~ 40
o
'"
~_
SECO~~~~i,~~QOWN _
.......
r-.....
"""THERMA~
""" I"'----
'"t;
o
i'..
...... r-......
~
r----.
""-
20
a
a
40
120
BO
Tc. CASE TEMPERATURE (DC)
4-443
160
"'"
"""
200
....,.... ...
~
. . /'1' '.'.
,.,
.
,
.
~"
.~
... ,.:
I"
:~
,
MJ10004
MJ10005
,
;'.
,~".';1
N
,
,Designers 'Data, Sheet
'
20 AMPERE
NPN SILICON
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
•
POWER DARLINGTON
TRANSISTORS
3S0 and 400 VO LTS
175 WATTS
The MJ10004 and MJ10005 darlington transistors are designed
for high,voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn·Off Times
40 ns Inductive Fall Time - 250 C (Typ)
650 ns Inductive St,!rage Time - 250 C (Typ)
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.
Operating Temperature Range ~65 to +2000 C
, lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak (11
Base Current - Continuous
- Peak (1)
Total Power Dissipation @ TC = 2SoC
@TC= 1000C
Derate above 2SoC
'MJ10004
3S0
400
450
Symbol
Rating
Collector-Emitter Voltage
VCEO(susl
VCEX(su,1
VCEV
VEB
IC
ICM
IB
IRM
Po
Operating and Storage Junction
MJ10005
400
450
500
8
20
30
2.S
5
175
100
1
-65 to +200
TJ,Tst9
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Characteristic
Maximum Lead Temperature for Soldering
Purposes: 118" from Case for 5 Seconds
I~"
E~!
PLANE
Adc
Wans
W/oC
°c
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resist8oce, Junction to Case
·Lr~
PIN I. BASE
2. EMITTER
CASE. COllECTOR
INCHES
MILLIMETERS
DIM MIN MAX
MAX
MIN
-
0,250
0039
F 29.90
~- 1067
11.18
0.420
5.59
1.15
0.210
0.655
0,440
0,151
Max
Unit
A
ROJC
TL
1
27S
°CIW
°c
C
D
E
(11 Pulse Test: Pulse Width = 5 ms, Duty Cvcle .. 10%
-
39.37
21.0B
7.2
1.09
3.43
30.40
Symbol
B
.35
0.99
-
H 5.
J 16.64
K 11.18
Q
R
3.S4
-
12.19
4.09
26.67
-
1.177
-
CollUle, conNeltd 10 c•.
CASE "·01
TO-3
4-444
1.550
0.S3O
0.3110
0.043
0.135
1.197
0.440
.220
0.675
0.480
0.161
1.050
MJ 10004, MJ 10005
ELECTRICAL CHARACTERISTICS (TC
I
0
25°C unless otherwISe noted).
I
Characteristic
Symbol
Min
Typ
Max
350
400
-
-
-
-
400
450
275
325
-
-
-
-
-
-
0.25
5
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
0
250 mA, 'B
'CEV
= Rated Value, VBE(offl = 1.5 Vdcl
= Rated Value, VBE(offl = 1.5 Vdc, TC = 1500 CI
Collector Cutoff Current
(VCE
= Rated VCEV. RBE = 50 n, TC = lOOoC)
g
2.Vdc, IC
-
'EBO
=0)
mAde
ICER
Emitter Cutoft Current
(VEB
Vdc
VCEX(sus)
Collector Cutoff Current
(VCEV
(VCEV
Vdc
VCEO(sus)
=0, Vcl amp = Rated VCEO)
MJ 10004
MJ 10005
COllector-Emitter Sustaining Voltage (Table 1. Figure 12)
MJ10004
IIC = 2 A, Vclamp = Rated VCEX, TC = 100°C)
MJ10005
IIC = 10 A, Velamp = Rated VCEX, TC = 100°C) MJ10004
MJ10005
IIC
~
mAde
175
mAde
SECOND BREAKDOWN
See Figure 11
Second Breakdown Collector Current with base forward biased
ON CHARACTERISTICS (21
DC Current Gain
IIC = 5 Adc. VCE = 5 Vde)
IIC = 10 Ade, VCE = 5 Vde)
hFE
Collector-Emitter Saturation Voltage
IIC = 10 Ade, I B =400 mAdel
IIC
(lC
VCE(satl
=20 Ade, 'B = 2 Adel
= 10 Ado, 'B = 400 mAde. TC = 1000 CI
Base-Emitter Saturation Voltage
flC = 10 Adc, 'B = 400 m~del
IIC = 10 Ade, 'B = 400 mAde, TC
Diode Forward Voltage (11
(IF = 10 Add
VBE(satl
-
50
40
-
600
400
-
-
1.9
3
2
-
Vde
-
-
Vde
-
-
-
2.5
2.5
Vf
-
3"
5
Ihf.)
10
-
-
-
Cob
100
325
pF
Id
-
0.12
0.2
liS
0.2
0.6
liS
0.6
0.15
1.5
0.5
liS
1.0
0.4
2.5
1.5
liS
= l000 CI
Vdc
DYNAMIC CHARACTERISTICS
Small·Signal Current Gain
flC = 1 Adc, VCE = 10 Vde, f test
Output Capacitance
(VCB = 10 Vdc, 'E
= 1 MHz)
= 0, ftest = 100 kHzl
SWITCHING CHARACTERISTICS
Resistive Load (Table 11
Delay Time
Rise Time
Storage Time
(VCC = 250 Vde, IC = 10 A,
'Bl = 400 mA, VBE(off) = 5 Vdc, tp = 50 liS,
Duty Cycle .. 2%).
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
tr
ts
tf
IIC = 10 A(pkl, Velamp = Rated VCEX, 'Bl = 400 rnA,
VBE(offl = 5 Vdc. TC = 100°C)
tsv
te
IIC = 10 A(pkl, Vel amp = Rated VCEX, 'Bl =400 rnA,
VBE(offl • 5 Vde, TC = 250 CI
t,v
te
-
-
0.65
0.2
(1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Tests have shown that the Forward Recovery Voltage JVft of this diode is comparable to that of typical fast
recovery rectifiers.
(21 Pulse Test: PW = 300 liS, Dutv Cycle .. 2%.
4-445
liS
liS
-
liS
-
liS
MJ10004, MJ10005
TYPICAL CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE I - DC CURRENT GAIN
50 0
.- l-
20 0
I
lOA
IC" S A
1
02
\
1.4
I
002
10
OS 07
03
0.03
I'..
0 OS 007
0I
FIGURE 3 ~ COLLECTOR-EMITTER
SATURATION VOLTAGE
I II
ICllB" 2S
J
2. 4 - f-
JI/
6
TJ" -ssoc
=
10
b
-
O.
20
B
0.2
ia
=
~
8
~VCE" 2S0 lV
10 I
/./
0.. 0.7
IC, COLLECTOR CURRENT (AMP)
10
20
TJ" 2S oC
70 0
./
./
0
r-- TJ" 12SoC
0
2I;;
-I
/
100 0
10 3
102
..-~
FIGURE 6 - OUTPUT CAPACITANCE
FIGURE 5 - COLLECTOR CUTOFF REGION
~
k'/
..-
250 e
-~
0.3
IC, COLLECTOR CURRENT (AMP)
10 4
7
V tI
TJ 1= .J5 0 C
6
I.2
O.S 07
0.3
~
~~~!~~I =tcci~B:l~
-j -,
I- Kooc
02
0 S 0.7
T
--I--
O
O. 4 -
-I.
2
VA
'/
f--~II--- I-- 2S C V
I II
IT.ITII
/
B
03
FIGURE 4 - BASE-EMITTER VOLTAGE
2,B
I II
2
0.2
IB, BASE CUR RENT (AMP)
IC, COLLECTOR CURRENT lAMP)
24
1\
\
\
V E "5 ~
,..-
0
1\ 20A
ISA
\
IB
t-
I
\
\
-S50C
0/
O
TJ" 2S U C
1
\
'\.
2
0
0
rT
\"
26
25°C
I--"
0
7
5
1
TJ" 150 0 C
30 0
~
./
r-.....
'--IOOoC
/
.....
I - - r--7S oC
0
./
l"
...... t--
~ 10
~REVERSE
FORWARD
0
Cob
° F F 2 S0 C
10- I
-0.2
0
+0.2
+0.4
+0.6
50
0.4 0.6
+0.8
I
4
6
10
20
40 60
VR. REVERSE VOLTAGE (VOLTS)
VBE, BASE·EMITTER VOLTAGE (VOLTS)
4-446
100
t=
200
400
MJ10004, MJ10005
TABLE 1 - TEST CONDITIONS FOR DVNAII/lIC PERFORMANCE
VCEO(susl
RESISTIVE
SWITCHING
VCEX(susl ANO INDUCTIVE SWITCHING
PuI50 :/1V
0,
Width
2N2907
02 2N2222
Pulse Width
03 2N3762
adjusted to
3.
obtain specified
Ie (Resistive
SWitching.
Pulse Width
'" 50 ps)
PW Varied to Attain
IC" 250mA
MJE210
05 MJE200
D, 1N914
D2
lN914
D3 lN914
5~
U..J
~~
lead" 180 J.lH
~~O~' : ~g~ 11
Lcoll-l0mHVCC*'10V
Rcoil-D.7n
Vclamp" VCEO{slIs)
VCC""25DV
RL" 25 n
Vclamp ". Raled VCEX Value
Pulse Width'" 50 IlS
INDUCTIVE TEST CIRCUIT
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
1 Ad,usted to
Oblam Ie
t
If Clamped
!!?
5
-<
u
If Unclamped ... t2
~:.6-_-t'-,.--'_
a:
iJ
....
LCO,IUepk'
t1
t=
Vee
, Leoil
:;;
12 "'" :":OIIIICpk'
See Above For
Detailed Conditions
VeE
r--n' .
{Clamp
D,n
Time
.... 12 ..J
,......
90% Vclamp
I-
r-'sv
try
1iJ..a\-lh--I'-',i-
i-J '-'c-\ r--
/
Vclamp
---
IS-
IIVO%
10%
Vclamp 90% 'SI
--\\
VcI,mpleT
-- ---.....-
---TIME
I'
10% .......
l e - 2%~
Ie
Test Equipment
Scope Tektronix
415 or EqulvlIilent
SWITCHING TIMES NOTE
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
Ie
Vcl amp
VeE or
1---
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase, However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time, For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time,.90% 181 to 10% Vcl amp
trY = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of.the turn·off waveforms is shown in
Figure 7 to aid in the visual identity of these terms,
4-447
MJ10004, MJ10005
TYPICAL CHARACTERISTICS
SWITCHING TIME NOTES (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-222:
PsWT = 1/2 VCCIC(tc! f
..
In general, trv + tfi "" t c - However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2!1>C and has become a benchmark
'for designers_ However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCH MODE" transistor are the inductive
switching speeds (tc and t sv ) which are guaranteed at
100oC.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN-OFF TIME
FIGURE 8 - TURN-ON TIME
3
1
VBE(ofl)
VCC
.1
ICIIB
o. 5
TJ
2
VCC = 250 V
II---- IcllB - 25
TJ ~ 25°C
o. 71~
]
~
0.5
w
:g
w
!
~d
'";::
~
-- 0.3
--...;::::
C.2
~
y
7
"
./
o.2
fl
V
/
/
/
...",,-
V
'f
""
O. 1
0.0 7
t---
o. 1
..",17
V
O. 3
.>
I--
I"':::
=5 V
= 250 V
= 25
= 25°C
10
0.0 5
'1
20
10
20
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 10 - THERMAL RESPONSE
0.7
5 0 = 0.5
w
u
z
~
~-'e
2
~ ~
01
"w
:EN
~~
ffi
;;;
~
...
-
0.2
01
ZOJCIII = rill RQJC
ROJC =l oCIW Max
I.
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
0071-- 0.05
~ 005
C02
003
I L-~
r-
002~1--~~l'jJ.l"'~.0~1:L~id~tlli==+=+=+=+=~++t+==!=1=t~
1
_'''''''SI~G~Er~L~~
00
--~ I
001
002
I I I I II
005
01
0.2
TJlpkl - TC = Plpkl Z'JCIII
DUTY CYCLE. 0 = ""2
I IIII
10
05
t,
TIME fms!
4-448
I
I
20
I
I I I IIII
50
100
I
I
200
I
I I I II
500
1k
MJ10004, MJ10005
SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions shown.
FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA
50
..
10~s
10
5
::s
S
....
~
I
oc 0.5
~
~
-
'-.
0
f..l
1m,
5m,
2
B
0
lOO"~
20
0.2=
0.1='
0.05
0.02
0.01
0.005
4
TC - 25 0 C
- BONOING WIRE LIMITED =,dc
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED'
CURVES APPLY BELOW RATED VCEO
-
MJIOO04 I-MJI0005 ,
~
6
10
20
40
60
100
1
200 350 /
400
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
FORWARD BIAS
There are two' limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve on
Figure 13.
TJ(pk) may be calculated from .the data in Figure 10.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA
.
20
S
TURN OFF LOAO LINE
BOUNDARY FOR MJIO,005
THE LOCUS FOR MJIO,004
16 IS 50 V LESS I
~
12
::s
....
oc
:::>
I
'-'
l\
~'- :-- VBE(olf} = 5 V
TJ,,1000C
oc
0
....
~
B
E
4
1\\:-- VBE(olf} = 2 V
I\",,\, ~ VBE(olf} • 0 V
8
\
r-..." I'....
\"\.
0
0
300
400
200
100
VCE, COLLECTOR·EMITIER V'OLTAGE (VOLTS)
500
REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn·off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a giv'en
collector current and represents a voltage·current condition that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.
FIGURE 13 - POWER DERATING
0
0
"""'::: t-......
'"
J'"--..-
i"-..
t-....
THERMA~
DERATING
0
SECOND BREAKDbwN_
DERATING
r---..
f'..
........
1"--.
I"'--
r-....
0
"
0
o
o
40
BO
120
TC. CASE TEMPERATURE (OC)
4-449
160
'" "
200
•
MJI0006
MJI0007
DesigneI"s Data Sheet
10 AMPERE
NPN SILICON
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
•
POWER DARLINGTON
TRANSISTORS
The MJ10006 and MJ10007 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times
""00 "'15
30 ns Inductive Fall Time - 250 C (Typ)
500 ns Inductive Storage Time - 25 0 C (Typ) )
Operating Temperature Range -65 to +200 0 C
1000C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
350 and 400 VOL TS
150 WATTS
~
•
~
•
•
•
•
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design_
6
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak II)
Base Current - Continuous
-Peak 11)
Total Power Dissipation@ TC
@l
= 2SoC
MJ10006
350
400
450
VCEOlsus)
VCEXlsusl
VCEV
VEB
IC
ICM
IB
IBM
Po
8
10
20
2_5
5
150
100
0_86
-65 to +200
TC = 100°C
Derate above 25 0 C
Operating and Storage Junction
MJ10007
400
450
500
TJ,Tstg
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Lr~
r~K
ESEATIN(~
PLANE
Adc
Watts
W/oC
°c
PIN I. BASE
2. EMITTER
CASE: COLLECTOR
Temperature Range
DIM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering
Symbol
ROJC
TL
MIx
1_17
275
Purposes: 1/S" from Case for 5 Seconds
(1)> Pulse Tt;tSt: PuiS,!, Width:: 5 ml, Duty Cycle <; 10%.
Unit
°C/W
°c
A
B
MILLIMETE S
INCHES
MIN
MAX
MIN MAX
-
C 6.35
D 0.99
E
f 29.90
G I .6
5_3
J I.
K 11.1
D 3.84
R
-
39.37
21.OB
7_62
1.09
3.43
30.40
11.18
5.59
17.15
1 .19
4.09
26.17
0.250
0.039
-
1.177
0.420
0.210
0.655
0.440
0.151
-
Collector connected to ca.
CASE 11-01
TO-3
4-450
1.550
0.B30
O. 0
0.043
0.135
1.197
0.440
.220
0.675
0.480
0.161
1.050
I
MJ10006, MJ10007
ELECTRICAL CHARACTERISTICS ITC
I
c
25°C unless otherwISe noted!'
I
I'
Min
Typ
Mox
350
400
-
-
MJ10006
MJ10007
400
450
-
MJ10006
MJ10007
275
325
Charilctoristic
Symbol
Unit
OFF CHARACTERISTICS
COllector-Emitter Sustaining Voltage (Table 11
IIc
= 250 mA,
IB
= 0,
Vel amp
= Rated
VCEO!
Collector-Emitter Sustaining Voltage !Table 1, Figure 121
IIC = 1 A, Vel amp = Rated VCEX' TC = 100°C)
(lC = 5 A, Vel amp = Rated VCEX, TC = 100°C)
ICEV
Collector Cutoff Current
= Rated
VCEV, RBE = 50
n, TC
-
mAde
-
ICER
-
-
lEBO
-
-
IVCEV = Rated Value, VBEloff! = 1,5 Vde)
IVCEV = Rated Value, VBEloff) = 1.5 Vde, TC = 150°C)
Vde
VCEX{,us!
Collector Cutoff Current
(VCE
Vde
VCEOlsu,!
MJ10006
MJ10007
0.25
5
5
mAde
175
mAde
= lOOoC)
Emitter Cutoff Current
(VEB = 2 Vde, IC = 0)
SECONO BREAKOOWN
See Figure 11
Second Breakdown Collector Current with base forward biased
ON CHARACTERISTICS 12)
DC Current Gam
-
hFE
40
30
-
500
300
-
-
-
-
:...
1.9
2.9
2
-
-
-
2,5
2.5
V,
-
3
5
Ih'e I
10
-
-
-
Cob
60
-
275
pF
td
-
0.05
0.2
~s
t,
-
0.25
0.6
~s
ts
-
0,5
"s
t,
-
0.06
1.5
0.5
IIC =5, Alpkl. Vcl amp = Rated VCEX, IBI = 250 rnA,
VBE(off) =5 Vde, TC = 100°C)
tsv
-
o.a
2.0
~s
te
0.6
1.5
"s
liC =5 A{pkl. Vel amp = Rated VCEX,lBl = 250 mA,
VBE(olf) = 5 Vde, TC = 25°C)
tsv
-
0.5
0.3
-
te
".
IIc = 2.5 Ade, VCE = 5 Vde)
IIc = 5 Ade, VCE = 5 Vde!
COllector-Emitter Saturation Voltage
VCEI,at!
(lC = 5 Ade, IB = 250 mAde!
(lc = 10 Ade, IB = 1 Ade!
(lc = 5 Ade, IB = 250 mAde, TC = lOOoC)
Base-Emitter Saturation Voltage
(lc = 5 Ade, la = 250 mAde!
(lc = 5 Ade, la = 250 mAde, TC = lOOoC)
VBElsati
Diode Forward Voltage (1)
Vde
Vde
Vdc
(IF =5Adcl
OYNAMIC CHARACTERISTICS
Smail-Signal Current Gain
IIc = 1 Ade, VCE = 10 Vdc, 'test = 1 MHzl
Output Capacitance
(Vca = 10 Vde, IE = 0, 'test = 100 kHz!
I
,
SWITCHING CHARACTERISTICS
Resistive Load (Table 11
Delay Time
Rise Time
Storage Time
(VCC = 250 Vdc, IC = 5 A,
IBl = 250mA,VBE(off) = 5Vde,tp= 50"s,
Duty Cycle';; 2.0%1.
Fall Time
"s
,Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
(1)
The internal Colloctor·to-Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Tests have shown that the Forward Recovery Voltage ,{Vf} of this diode is comparable to that of tvpical
fast recovery rectifiers.
(2)
Pulse Tost: PW = 300
~s,
Duty Cycle" 2%,
4-451
-
"s
MJ10006, MJ10007
TYPICAL CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN
300
g 3.4
TJ=IS00C
200
2S~C
100
z
;;: 70
'">- 50
~
•
<.>
<.>
..,,-
20
....
~1 0 /
I
vCf = S, V
0.2
03
O.S 0.7
1
2.2
~
l. S
""'"
~
1.4
S
1
IC=0.3A-
~
3
0.1
2. 6
'">ffi
TJ' 2S oC
::
-SSoC
'"W
'"~
'"~
w
V
30
:>
l'
FIGURE 2 - COLLECTOR SATURATION REGION
3'
2
S
7
......
.1
......
> O.6
10
10
20
30
50
70 100
200 300
lB. BASE CU RRENT ImA)
IC. COLLECTOR CURRENT (AMP)
FIGURE 3 - COLLECTOR·EMITTER SATURATION VOL TAGE
2
S
'"~
'"~
'">
II
TJ=-55~V
2
t"'""
8
250~
r--r
V
..,....Vv
0.2
0.3
0.5 0.7
IC. COLLECTOR CURRENT (AMP)
2.4
--- V~EI~tI'@ I,C\'~ ~
10
VBElon)@VCE • S V
1k
I;'
III
TJ = -5SoC
V
i--'" V-
H1
6
25~ ~
2
UL V
O. Sf-0.1
10
.....
II
V
/
1500 C
.-
FIGURE 5 - COLLECTOR CUTOFF REGION
1/
....... V
250C
..... V
~
I
4
r-
w
V
6
SOO 700
FIGURE 4 - BASE·EMITTER VOLTAGE
2.S
4
IC/I~ = 10
.1 'OA
5A
2.SA,
II
0.2
0.3
0.5 0.7
1
IC. COLLECTOR CURRENT (AMP)
10
FIGURE 6 - OUTPUT CAPACITANCE
103
400 ......
I.....
TJ·" 2SoC
~
~ 20 0
z
;0
U
§
Cob
~ 10 0
e:
:>
0
j
0
'"
40
10-1
-0.2
0.1 0.2
VBE. BASE·EMITTER VOLTAGE (VOLTS)
~
O.S
1
10
20
SO
100 200
VR. REVERSE VOLTAGE (VOLTS)
4-452
5001000
MJ10006, MJ10007
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
VCEXlsus) AND INDUCTIVE SWITCHING
SWITCHING
0' 2N2907
02 2N2222
Pulse Width
OJ 2N3762
ad,ustad to
cblalnspocihed
O' MJE210
'e (Aesutlve
Switching.
Pulse Width
PW Varied to Attain
'" 50 ~u)
Ie" 250 rnA
as
MJE20Q
D'
D2
lN914
lN914
DJ lN914
Leoil" 10 mH
Reol'''' 0.7
Vee"
Leoll'" 180,l.lH
AeOlI '" 0 05 n
Vee =20V
fa = 500 kHz
10 V
n
Vclamp" VCEO(susJ
INDUCTIVE reST CIRCUIT,
Vee = 250 V
RL" 50 n
Pulse Width" 50 PI
Vcl amp " Rated VCEX Value
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
t 1 Adjusted 10
Obtain
If Clamped
Ie
If Unclamped ... 12
<'
'1 ""
LCO~~~CPkl
L..I.o<----J.L-->....
12 .;;: leOd (lCpk'
Vel amp
0.1
Test Equipment
Scope-Tektronix
n
475
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
r-i-
Ie
IJI\!90% Ie
90% V,'amp
forVclamp
-- --\- -- ---
IB-
--
l'vfl~lh-
_I",
/10%
90% IBI
\
~
'-I,~ :--
1"-
10% ........
V,'amp- IC-
- -- -
....... ~
TIME
Vcl amp
I 01-1" ....
2%~
Ie
or Equipment
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new term's
have been defined.
tsv ~ Voltage Storage Time, 90% IBI to 10% Vcl amp
trv ~ Voltage Rise Time, 10-90% Vclamp
tli ~ Current Fall Time, 90-10% IC
tti ~ Current Tail, 10-2% IC
tc ~ Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion 01 the turn·off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.
4-453
MJ10006, MJ10007
TYPICAL CHARACTERISTICS
SWITCHING TIME NOTES (continued)
For the designer. there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-22.;~:
PSWT = 1/2 Vcclcltcl f
In general. trv + tfi "" t c - However. at lower
test currents this relationship may not be valid .
As is common with most switching transistors, resistive
switching is specified at 2!PC and has become a benchmark
for -designers. However. for designers of high frequency
converter circuits. the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (tc and t sv ) which are guaranteed at
lOOoC.
•
RESISTIVE'SWITCHING PERFORMANCE
FIGURE 8 - TURN-ON TIME
FIGURE 9 - TURN·OFF TIME
1
VBE(offJ
vce
IBI
TJ
O.7
o.S =
r-.....
Vcc-2S0V
IBI"2SDmA
O. 3 - I- TJ" 2SoC
r-
O. 2
.
---
0.0 3
0.0 2
0.0 1
0.1
0.2
-
1-'''''
0.3
0.5 0.7
r--
'"
~ 0.3
'f
~
0.2
1'-
'd
1
Sv
250 V
2S0 mA
2SoC
-;;; o. 7
:- o. S
',1/
o. 1
~_ 0.0 7
0.0 S
~
's
1
"
"
"
'-
O. 1
0.07
O.OS
0.1
10
0.2
0.3
O.S 0.7
10
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 10 - THERMAL RESPONSE
1
~
O. 7=0"05
~ __ O. 5
wO
.
:: o.
--
",
~
~~
3== 0.2
O. 2
",0
",,'"
1. 2
~
--
10
0.8
0.2
20
/
1--:""-::
2SoC
1.6
:>
V
V 1#
k'?
TJ I• -Jsoc
2
w
I--'
0.\ 0.7
I
VBEI.. ,}@ If,'IB =10
--- VBE(on}@. Cf = 3 V
2~~
-I
V
f..-- ~
I- f.-1sooe
o. 4
TJ = 2SoC
0.2
0.5
IB' BASE CURRENT (AMP)
~
~
/A
'/
TJ' _\\Oe
2
0.1
'"
FIGURE 4 - BASE·EMITTER VOLTAGE
2.8
6
\
\
8
w
20
\=20A
\
FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE
2. 4
\ -IDA
~
,......
./
1\
IC'SA
> 2. 2
2SJC
.
I II
I II
2.6
.~
1'1
./'"
~
::1.
B 100
..
1E
w
TJ = ISOoC
z
40
3
I
0.3
0.5 0.1
IC. COLLECTOR CURRENT (AMP}
Ie. COLLECTOR CURRENT lAMP}
10
FIGURE 6 - OUTPUT CAPACITANCE
FIGURE 5 - COLLECTOR CUTOFF REGION
1000
C::VCE'2\0)V
1... 103
~B
::'"
;
8
102f==:
10 1
./
TJ'2soe
70 0
~ 500
/
r--- TJ' 12\OC
./
.......
"5 300
I
f::l000C
;t
:3
I
r-- r-7S·C
200
" ",
~
.j
:::>
~ to
~REVERSE
FORWARD
° F F 2 s oe
10' 1
-02
20
-06
-02
-04
VBE. BASE EMITTER VOLTAGE (VOLTS}
10 0
Cob
0
-0 B
S0
0.4 06
1
4
6
10
20
40 60
VR. REVERSE VOLTAGE IVOLTS}
4-458
100
=
200
400.
MJ10008, MJ10009
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOlsusl
R!GISTIVE
S\VIT H
vceXIIUI' AND INDUCTIVE SWITCHING
TURN·ON TIME
..
Z
.... 0
~E
zo
Pul.e Width
Ddjultild to
-"8
IS1 adJuned to
obtain the torc::1Id
hFE d ..lr~
obU,n specified
Ie (R"""ve
TURN·OFF TIME
Uu Inductlvo swltchlna
driver •• the Input to
SwitChing,
Pulse Width
PW V.rled to Awln
"2!5 psi
'C· ,OOmA
5~
the 'OI',trw
Leoil· 10 mH Vee" 1Q V
RcoU-O.7fl
V cr • mp " VCEO(lu,1
U...J
Q~
tnt
circuit.
Vee" 250 V
RL - 26 n
Pul.e Width" 2el"
INDUCTIVE TEST CIRCUIT
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
t 1 Adjusted to
.
II Clamped
....
S
r
"Ua:
E
....
,
I Reo.1
1
',Lcol '
l
Sae Abollo For
Detailed Conditions
Vc::lamp
-=..
J
-=- Vee
o--~L-J
2
~ b RS "
0.1
Ob',a.n
Ie
1
I
~Il-tf~
v CE
! ..-,
,
n
t2 ...
Lc~1I
tlepkl
VClamp
VeE or
Vcl amp
Ten Equipment
Scope - Tektronllt
475 or Equivalent
Time
-Adjust -V such that VSE(off)'" 5 V excopt as requirod for A8 SOA (Figuro 12).
SWITCHING TIMES NOTE
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
r-+
.,'amp J~90% 'e VCla~p..,.... f--Isv- 1>1- " +Hoo\-I" .... !-o-IU'
h '---1,--\
Ie
90%
/
Vclamp
'9-
-
10%
Vclamp-
90% '81
-- --\- --
~-
f----
\
~
--
I'\.
10% .......
'e-
---- -- -
-
TIME
r-i2%_
'e
In resistive switching circuits. rise. fall. and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
suppl ies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason. the following new terms
have been defined.
t sv ; Voltage Storage Time, 90% IS1 to 10% Vclamp
trv; Voltage Rise Time, 10-90% Vel amp
tfi ; Current Fall Time, 90-10% IC
tti ; Current Tail, 10-2% IC
tc ; Crossover Time, 10% Vclamp to 10% IC
- continued -
4-459
••
MJ10008, MJ10009
TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN·222:
PSWT = 1/2 Vcclc(tcl f
Typical inductive switching waveforms are shown in
Figure 7. In general, trv + tfi "" tc' However, at lower
test currents this relationship may not be valid .
As is common with most switching transistors, resistive
switching is specified at TC = 2S o C and has become a
benchmark for designers. However, for designers of
high frequency converter circuits, the user oriented
specifications which make this a "SWITCHMODE"
transistor are the inductive switching speeds (tc and tsv)
which are guaranteed at TC = lOOoC.
•
RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN·ON TIME
"'
]
........
'P
~ 25"s.IDu.yICYCI~" b
"........
'"
.......
...........
/
_
'"r-.......
o.2
f:=Vcc = 250 V
f---lcliB=20
f--- VBEIDIf) = 5 V
0.5 f--- TJ 25DC
.,.,
~
"
...
~ O. 2 /
>1
;::
/
/
i't'-
V
.... ,
'P = 25",. Duty Cycl. " 2%
o. 1
i'..
o. I
f--
]
L
V
C
IcliB =20
TJ=25 DC
.........
w
;::
I
/
I I
VCC = 250 V
......
0.5
FIGURE 9 - TURN-OFF TIME
I
/
If
'd
0.0 5
5
10
IC. CDLLECTDR CURRENT (AMP)
. 20
20
5
10
IC. COLLECTOR CURRENT (AMPI
FIGURE 10 - THERMAL RESPONSE
I
_:;;00-
1IIIIt;;;.oIIT~JUl
0.05 _
--j 'I ~'2-
0.02.,.,
I-
d-::: -
0.03
0.02 ""'"'" 0 01
.....
0.01
"'1'
I
~
Z,'JCItI' ,1'1 RUJC
RUC = IDCN! Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 'I
TJlpk) - TC' Plpkl ZeJCltl
DUTY CYCLE. 0 =""2
SliG~E i~Lr~
I • I II
10
I
I
20
I
I I I I I II
I
I
I
I I I II
I
O.O~~~~~~~~~~~-L-L~~~~~
__~~-LLU~-L~~~~~~=-~~-L-L~~~
0.02
0.05.
0.1
0.2
05
1,
TIME Imsl
4-460
50
100
200
500
1k
MJ10008, MJ10009
SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions shown.
FIGURE 11 - FORWARO BIAS SAFE OPERATING AREA
50
101-15
20
10
5
ii:
...'"
~
100",
2
1
iii
.,
.,
.,a
m'
.
0.2
-'
0.1~
~
-
8 0.05
.. Bonding Wire Limit
Thermallimil @TC:: 25 0 CI
ISingle Pulse)
Second Breakdown Umlt
de
S! 0.02
0.D1
0.005
6
10
50
20
~;:~~~:~ ~
200
100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
~
450 600
500
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate .
The data of Figure 11 is based on TC = 25 0 C; TJ(pk)
is vanable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown Iimitations
do not derate the same as thermal Iimitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve on
Figure 13.
TJ(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA (MJ10009)
20
I
18
~
14
.,i5
12
...
,
16
~
f----
\.
TC=100oC
IC/IB1" 20
~
<=
10
'-'
<=
..
.~
:::>
'-'
S!
For MJ1000B. the turn·off
8 rlold line IimiU are 50 V less.
6
VBE(oH) = 5 V
=2V
-OV-
4
2
0
0
,\\
\' ~
M
"'
\
400
200
100
300
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
500
REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased_ Under
these conditions the collector voitage must be held to a
safe level at or below a specific value of collector current,
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc, The safe
level for these devices is specified as VCEX(sus) at a given
collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics. See Table 1 for circuit conditions.
FIGURE 14 - REVERSE BASE CURRENT •• rsus
VBE(offl WITH NO EXTERNAL BASE RESISTANCE
FIGURE 13 - POWER DERATING
100
~ t--..
r---...
"'"1"""-
..
.,~80
t;
Derating-
~
.
ffi40
..........
..............
~
""
a:
0
o
o
40
,-
Derating
r--....
"-
,/'
Forward Bias
Second Breakdown -
...... ~
Therm8~
...:tz 60
I
0
BO
120
TC, CASE TEMPERATURE (DC)
V
7
./
V
5
V
V
IC = lOA
V
2 ~ Sel Table 1 for canditions•
Figure 7 for aveshapl.
.........
160
"" "'"
200
0
I
YBE(olf), REVERSE BASE CURRENT (YOLTS)
4-461
,
•
MJI00ll
Advance In.formation
8 AMPERE
NPN SIUCON
DARUNGTON
POWER TRANSISTOR
DARI..INGTON
HORIZONTAl.. DEFl-ECTION TRANSISTOR
.
1400 VOLTS
80 WATTS
, , , specifically designed for use in deflection circuits,
'
+-•
•
VCE(sat) = 3,0 Volts (Max)@IC=4,OAm ps.18=200m;-:A_ _
•
Built·ln Damper Diode
•
VCEX = 1400 Volts
•
Glassivated Base·Collector Junction
o Safe Operating Area @ 50!1s = 25
A.
200 V
MAXIMUM RATINGS
Symbol
Value
Unit
VCEX
1400
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
Collector Current - Continuous
Peak (11
IC
ICM
8.0
16
Adc
Base Current - Continuous
Peak (11
IB
IBM
2.0
4,0
Adc
Emitter Current - Continuous
Peak (I)
IE
IEM
10
20
Adc
Total Power DISSipation @ T C == 25 0 C
Po
80
0.6
Watts
W/oC
TJ, T stg
-65 to +150
°c
Symbol
Max
Unit
ReJC
1.56
°CIW
TL
275
°c
Rating
Collector-Emitter Voltage
Derate above 2SoC
Operatmg and Storage Junction
Temperature Range
Lr~
r~K
ESEATIN!~
PLANE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for
Soldering Purposes:
1.8" from Case for 5 Seconds
STYLE I'
(1) Pulse Test: Pu Ise Width = 1 ms, Duty Cycle.;;,;; 10%.
PIN 1. BASE
2. EMITTER
CASE, COLLECTOR
FIGURE 1 - FORWARD BIAS SAFE OPERATING AREA
20
0:
...z"
:>
w
'"'"=>
u
'"
0
0
0
MILLIMETERS
DIM MIN MAX
1.0 ms
A
2. 0
B
C
10
O. 5
~
S
D
E
0.2
O. 1
0.0 5
£? 0.0 2
00 1
0.00 5
7.0
-
-
6.35
0.99
-
F 29.90
G 10.67
de
5.33
J 16.64
K 11.18
n 3.84
H
BONDING WIRE LIMIT
- - - - THERMAL LIMIT ISINGLE PULSE)
- - - SECOND BREAK.DDWN LIMIT
10
.
~-+---,,<:
--+-.~~
20
30
50 70 100
200 300
VCE, COLLECTOR EMITTER VOLTAGE IVDLTSI
500 700
4-462
R
-
·39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
11.15
12.19
4.09
26.67
INCHES
MIN
MAX
-
1.550
0.830
0.300
0.043
0.135
1.191
0.440
0.220
0.675
0.480
0.161
1.050
0.250
0.039
-
1.177
0.420
0.21
0.655
0.440
0.151
-
CASE 11·01
TO·3
I
MJ10011
ELECTRICAL CHARACTERISTICS
(TC
=
25 0 unless othe,wlSe notedl
Characteristic
OFF CHARACTERISTICS (1)
VCEOlsus)
700
-
-
Vdc
Collector Cutoff Current
ICES
-
-
0.25
mAde
IVCE = 1400 Vde, VSE = 0)
Em itter Cutoff Current
(VSE = 4.0 Vde, IC = 0)
IESO
-
-
50
mAde
-
-
3.0
3.0
-
-
2.0
2.0
1.2
2.0
Collector·Emltter Sustaining Voltage
lie = 100 mAde, IS = 01
ON CHARACTERISTICS III
Collector-Emitter Saturation Voltage
Vde
VCElsat)
(Ie = 3.5 Ade, IS = 0.15 Ade)
(lC = 4.0 Adc, IS = 0.2 Ade)
Base Emitter Saturation Voltage
Vde
VSElsat}
IIC = 3.5 Ade, IS = 0.15 Ade)
IIC = 4.0 Ade, IS = 0.2 Ade)
Forward Diode Voltage
VI
IIF = 4.0 Adc)
Second Breakdown Collector Current with Base Forward Biased
See Figure 1
ISlb
SWITCHING CHARACTERISTICS
Fall Time (See Figure 2)
IIC = 4.0 Adc, lSI = 0.2 Adcl
(1) Pulse Test: Pulse Width'" 300
}lS,
Duty Cycle
=.
2%.
FIGURE 2 - FALL TIME TEST CIRCUIT
Driver Supply
lW
+24 V
680
2.2 k
0.0075/
100 V
Width
Adj,
1 k
1.8 k
10
Capacitor values in JlF, resistors 1/4 watt unless
o!herwise noted,
5W
-+ 125 V
FIGURE 3 - DC CURRENT GAIN
200
V~E! 5.~ ~
......
I-
TC = 25 0 C
"\
~
10
01
0.2
1.0
05
2.0
'C, COLLECTOR CURRENT (AMPI
4-463
5.0
10
Vdc
•
IJ10012
NPN SILICON POWER DARLINGTON TRANSISTOR
15 AMPERE PEAK
The MJ1 0012 is a high·voltage, high·current darlington transistor
designed for automotive ignition, switching regulator and motor con·
trol applications.
POWER TRANSISTOR
DARLINGTON NPN SILICON
400 VOLTS
175 WATTS
• . Coliector·Emitter Sustaining Voltage VCEO(sus) =400 Vdc (Min)
•
•
175 Watts
Capabili~Y
Collector
at 50 Volts
• Automotive Functional Tests
Emitter
MAXIMUM RATINGS
Symbol
Value
Unit
Collector·Emitter Voltage
VCEO(SUS)
Collector.Emitter_Voltage
(RSE = 27 n)
VCER
400
550.
Vdc
Vdc
Collector·Base Voltage
VCBO
VEBO
IC
600
8
10
15
Vdc
Vdc
Adc
IB
Po
2
175
100
1
-65 to +200
Adc
Watts
Watts
W/oC
Rating
Emitter-Base Voltage
Collector Current - Continuous
-Peak (1)
Base' Current
Total Power Dissipation @TC
@>TC
= 2SoC
= 100°C
Derate above 2SoC
Operating and Storage Junction
Temperature Range
TJ, Tstg
Characteristic
Maximum Lead Temperature for Soldering
Es~1
PLANE
STYLE 1:
PIN 1. BASE
2. EMI'ITER
CASE: COLLECTOR
Dc
MILLIMETERS
DIM MIN
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Lr~
r~.
Symbol
Max
Unit
R6JC
TL
1
275
DcIW
"C
--
A
B
C
0
6.35
0.99
E
f
.90
-
o.
H
J
Purposes: 1/8" from Case for 5 Seconds
K
0
R
(1) Pulse Test: Puis. Width = 5 ms, Duty Cycle ... 10%.
1.18
3.14
-
MAX
39.37
21.08
7.62
1.89
3.43
30.40
11.1a
5.59
17.15
12.19
4.09
28.67
INCHES
MAX
MIN
~
-
0.250
0.039
0.043
0.135
1.171 ·1.197
0.420 0.440
0.210 0.220
0.655 0.675
0.440 0.480
0.151 0.161
1.050
-
-
CASE 11·01
TO·3
4-464
1.551!
0.830
MJ10012
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted)
I
I
Symbol
Min
Typ
Max
VCEO(sus)
400
-
-
Vde
VCERlsus)
425
-
-
Vde
Collector Cutoff Current
(Rated VCER, RBE = 27 Ohms)
ICER
-
-
1
mAde
Collector Cutoff Current
IRated VCBO, IE = 0)
ICBO
-
-
1
mAde
Emitter Cutoff Current
lEBO
-
-
40
mAde
(lC a 3 Ade, VCE· 6 Vdel
(lC • 6 Ade, VCE = 6 Vdel
(lC = 10 Ade, VCE = 6 Vdel
hFE
300
100
20
-
-
Collector-Emitter Saturation Voltage
(lC = 3 Ade, IB = 0.3 Adel
(lC = 6 Ade, IB = 0.6 Adel
(lC = 10 Ade,IB = 2 Adel
VCElsat)
Base-Emitter Saturation Voltage
IIc = 6 Adc, IB = 0.6 Adc)
(lc = 10 Ade, IB = 2 Adel
VBElsati
Base-Emitter On Voltage
(lC = 10 Ade, VCE = 6 Vde)
VBElon)
Vf
Charactoristic
Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Figure 1)
(lc = 200 mAde, I B = 0, Vel amp = Rated VCEO)
Collector-Emitter Sustain!"g Voltage (Figure 1)
IIC = 200 mAde, RBE = 27 Ohms,
Velamp = Rated VCER)
(VEB • 6 Vde, IC
a
01
ON CHARACTERISTICS (11
DC Curront Gain
Diode Forward Voltage
550350
150
4000
Vde
-
-
-
2.5
3
-
-
2.8
Vde
-
2
3.5
Vde
1.5
2
2.5
-
Vde
(IF = '10 Adel
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE = 0, f test = 100 kHz)
(VCC
= 12 Vde,
= 6 Ade,
IBl = IB2 = 0.3 Ade)
IC
Figure 2
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base-Forward Biased
Pulsed Energy Test ISee Figure 121
IC2L
-2III Pulse Test: Pulse Width
rI
ov--1
:
n
~.
L
c
10 mH
---j " : - 100
f- 5 ms ..j
Vcl amp
220
• Adjust tl such that
Ie reaches 200 mA
at VCE == Vcl amp
I
-
I
180
FIGURE 2 - SWITCHING TIMES
TEST CIRCUIT
Vee"" 20 Vdc
L
-
= 300 IlS, Duty Cycle = 2%.
FIGURE 1 - SUSTAINING VOLTAGE
TEST CIRCUIT
10V
-
See Figure 10
IS/B
27
Vclamp
VCEO(sus) :: 400 Vdc
V CE A (sus) == 425 Vdc
4-465
mJ
MJ10012
FIGURE 4 - COLLECTOR-SATURATION REGION
FIGURE 3 - DC CURRENT GAIN
2000
~o
TJ-1500 e
1000
z 100
iii
500
~
30 0
/'"
~I
70
Ti
,p
-
•
~
2:
0.3
~
o
IC = 0.5 A
~
w
I
<.>
> 0.5
10
0.02
0.05
0.1
0.1
Ie. BASE CURRENT (AMP)
lelle = 5
2.8
~
0
2:
TJ = 150 0 C
2.4
II II
- - - VeE("I)@le/le = 5
------ VeE (on) @VCE = 6 V
-
w
'"«
1.4
~
f:.-:: ?
-300 e
>
TJ = -30 0 C
'"~
....
-2sbc
V
-2.5!C_
-'Loy
1.6
1ij
w
~
0.6
~
1.2
'"'"
>
o
0.2
0.1
0.2
0.3
>
10
0.5 0.1
Ie. COLLECTOR CURRENT (AMP)
0.8
--f-
--
FIGURE 7 - TURN-OFF SWITCHING TIME
0.2
0.3
~
1
-- O. 1
O. 5
0.5 0.1
IC. COLLECTOR CURRENT (AMP)
VCE - 250 Vdc
TJ=1500 C
If
V
150 0 C
10
FIGURE 8 - COLLECTOR CUTO.FF REGION
Is
,
...v
1.1-
r-
0.1
0
~
w
_--V
II
!:i
0
25 0 e
,;,
o
0.5
FIGURE 6 - BASE-EMITTER VOLTAGE
II
II
-....-
lOA
6
r-0.005 0.01
0.002
"
3
"
8
0.5 0.1
Ie. COLLECTOR CURRENT (AMP)
~
1ij
~
1\
1.5
'"o
o
~
I\,
~
U;I
;; 1.8
a'"
1\
'"
;;;
II II
0.2
TJ = 250 C
w
ooe
~ 2.2
~
\
1'\
FIGURE 5 - COLLECTOR-EMITTER
SATURATION VOLTAGE
o
~
\
>
!:i
o
- - - - - VeE = 6 Vdc
./
20 0. 1
.~
«
VeE '3Vdc
50
30
\
~ 2.S
-
II . . . . . i'"'"
<.>
W
1""'-
,,/
a- 200 /
clOD
-
25 0 e
\
\
\
>
./
./
Ie = lelES
TJ = 25 0 C
Iclle = 20
VCE =12 Vdc
1
-15 0 e
0.3
=250 e
O. 2
REVERSE
O. 1
0.2
10- 1
0.3
0.5
0.7
1
2
IC. COLLECTOR CURRENT (AMP)
10
-0.2
20
4-466
FORWARD
o
+0.2
+0.4
+0.6
VeE. eASE·EMITTER VOLTAGE (VOLTS)
+O.B
MJ10012
~:0
«
FIGURE 9 - THERMAL RESPONSE
1
i
~~5
~
o. 3
w
~
~~
«
7 0-0.5
0.2
2.
-0.1
O. 1 0.05
L---
:~~.~~
E
~
:=
-
]1[L
Plk)
-=
IJ
00
0.0
12
0.03'-+-"'-
~ 0.02
~
1-.
~
::::srNG~E PU~SE
00 1
. 0.01
DUTY CYCLE, 0
I I
=
11/12
ROJC(t) = r(11 ROJC
AOJC'" C/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWr~
READ TIME AT 11
TJ(,k)
I 111111
0.1
0.05
0.02
01
10
0.5
20
100
50
TC - P(,k) ROJC(II
I 111111
200
500
1.000
2.000
t. TIME (ms)
FIGURE 10 - FORWARD BIAS SAFE OPERATING AREA
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25 0 C; TJ(pkl is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;;. 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
TJ(pkl may be calculated from the data in Figure 11.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0
0
0:
:;
0
5
5
w
2
....z
'"'"
~
'"~
.....
100j.JS-
50 ms
10ms-1-
1
01
de
jo 1
8
Te -15°C
BONDING WIRE LIMIT
- THERMAL LIMIT (SINGLE PULSEI
SECOND BREAKDOWN LIMIT
;:'
00 1
0.00 5
5
10
10
30
50
70
100
200
300.
500
VeE. COLLECTOR·EMITTER VOLTAGE (VOL TSI
FIGURE 12 - USAGE TEST CIRCUIT
FIGURE 11- POWER DERATING
'10 0
~ t-.....
0
""'"
o
................
"""
THERMAL
DERATiNG
0
'0
10mH
40
Stan core
............
~
BO
SECOND BREAKDOWN
DERATiNG-
1.5
Vee'" 12 Vdc
120
TC. CASE TEMPERATURE 10C)
Vz = 400 V
10 Vdc
............
'" "
C2688
o~
5 ms
.........
I
I
.~
............
I
20
lN4933
0.3
220
"
160
27
"F
""-
"""
200
t1 to bo solectod such that JC roaches 6 Adc before switCh-off.
NOTE:
"Usago Tost," Figure 12 spoclflol enorgy handling capabilities
In an Dutomotlvo Ignition circuit.
4-467
M1I0013
M1I0014
D~~i g:n:e
I'S Bata Sheet
"
10 AMPERE
,
NPN SILICON
SWITCHMODE SERIES
NPN_SILICON POWER DARLINGTON TRANSISTORS
POWER DARLINGTON
TRANSISTORS
The MJ10013 and MJ10014 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for lineoperated switch mode applications such as:
•
..
•
•
•
•
•
550 AND 600 VOLTS
175 WATTS
f
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
W
Fast Turn-Off Times
=tI100
"15
Designers Data for
"Worst-Case" Conditions
The Designers Data Sheet permits
the desigQ of most circuits entirely from
the information presented_ Limit datarepresenting device characteristic
boundaries-are given to facilitate
6
250 ns Inductive FAil Time-25 0 C (Typ)
500 ns Inductive Crossover Time-,25 0 C (Typ)
1.4 f-lS Inductive Storage Time-25 0 C (Typ)
•
•
Operating Temperature Range: -65 to
"worst-case" design.
+200 0 C
1000 C Performance Specified for:
R'eversed Biased SOA With Inductive Loads
Switching Times With Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
-Peak (11
Base Current - Continuous
- Peak (11
Total Power Dissipation@TC = 25°C
@TC= 100°C
Derate above 25°C
Symbol
VCEOlsus)
VCEV
VEe
IC
ICM
IS
IBM ,
Po
Operating and Storage Junction
Temperature Range
MJ10013
550
650
TJ,Tstg
I
I
I
MJ10014
600
700
8
10
15
7
10
175
100
1
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Characteristic
Maximum Lead Temperature for Soldering
ES:?-t;:
Watts
W/oC
°c
PIN 1. BASE
2, EMITTER
CASE COLLECTOR
MILLIMETERS
INCHES
DIM MIN MAX
MIN MAX
Symbol
Max
Unit
A
' R8JC
TL
1
275
°C/W
C
0
E
Purposes: l/S" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%
°c
I
-
35
0.99
-
f 29,90
G 10, 7
H
J 16,64
K II.1B
Q
3,84
R
-
39,37
21,UB
7,2
1.09
3,43
31UO
11.18
5,9
17.15
12,19
4,09
26.67
-
0,
0,039
-
1.177
0,420
O. 10
0,655
0,440
0,151
-
Colltclorconnectldtoc_
CASE ,11·01
TO·3
DeSigners and SWltchmode are Trademarks of Motorola Inc.
4-468
I·
PLANE
Adc
THERMAL CHARACTERISTICS
Thermal Resist8oca. Junction to Case
Lr~
r~,
1,550
0,B30
0
0,043
0,135
1.197
0,440
0,220
0,675
0,4eo
0,161
1,050
MJ10013, MJ10014
ELECTRICAL CHARACTERISTICS ITC" 25°C unless otherwISe notedl
Characteristic
Symbol
Min
Typ
Max
550
600
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
(lC= 100mA.IB =01
.'
Collector Cutoff Current
-
Collector Cutoff Current
n. TC
ICER
-
mAde
ICEV
IVCEV ~ Rated Value. VBEloltl = 1.5 Vdel
IVCEV ~ Rated Value. "BEloltl = 1.5 Vde. TC = 1500 CI
IVCE = Rated VCEV. RBE = 50
Vde
VCEOlsusl
MJ10013
MJ10014
-
-
.,
0.3
5
5
mAde
175
mAde
= 100DCI
Emitter Cutoff Current
lEBO
IVEB = 2 Vde. IC = 01
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased.
See Figure 12
Clamped Inductive SOA with Base Reverse Biased
See Figure 13
ON CHARACTERISTICS 121
DC Current Gam
-
hFE
10
-
500
250
-
-
2.5
2.6
.-
3
'20
(lC = 5 Ade. VCE = 5 Vdel
(lC = 10 Ade. VCE = 5 Vdel
Collector-Emitter Saturation Voltage
Vde
VCElsatl
(lC = 10 Ade. IS = 2 Adel
(lC = 10 Ade. IS = 2 Ade. TC = 100 0 CI
Base-Emitter Saturation Voltage
VBElsatl
Vde
-
-
Vf
-
3
5
Vdc
Smail-Signal Current Gain
(lC = 1 Ade. VCE = 10 Vdc. f test = 1 MHzl
I hIe I
10
-
-
-
Output Capacitance
IVCS = 10 Vde.IE = O. f test = 100 kHzl
Cob
100
350
pF
td
-
I"
(lC = 10 Ade. IB = 2 Adel
(lC = 10 Ade. IS = 2 Ade, TC = 1000CI
Diode Forward Voltage 11 J
3
(IF = 10 Adcl
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
ReSistive Load (Table 11
Delav Time
Rise Time
Storage Time
IVCC = 250 Vdc. IC = 10 A.
ISl = 400 rnA. VBEloltl = 5 Vdc. tp = 50 ~'.
Duty Cycle'; 2%1.
0.02
0.2
tr
0.9
2
ts
4
1
tf
-
0.95
0.22
IIc = 10 Alpkl, Vcl amp = 250 Vdc.ISl = 1 A.
VBEloffl = 5 Vde, TC = 100 0 CI
ts
-
2.3
1
6
te
(Ie = 10 Alpkl. Vcl amp = 250 Vdc.ISl = 1 A.
VBEloff) = 5 Vdc. TC = 25 0 CI
ts
-
1.4
0.5
-
-
0.25
-
Fall Time
~,
~,
,.,
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
Fall Time
te
tfi
(11 The internal COllector·to·Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast
recovery rectifier$.
121 Pul'e Test: . PW = 300 Il', Duty Cycle.; 2%.
4-469
3
~s
,.,
,.,
,.,
~,
•
MJ10013, MJ10014
TYPICAL CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURIIENT GAIN
40O'
200
I--. TJ!
l.--
'"
;;: 100
~
ISO'~
"~
w
.C>
,
r-...
a
60
u
;"
20
./
V
'"
10
,
">
2. B
1il
2.2
~
1.&
'"
....
....
2S'C
40
3.4
<
:;
C>
§
1 1 _I
TJ·25'C
'"
VCE· S V
""'
c
\
•
~
>
O.IS
0.2
0.3
O.S 0.7
IC. COLLECTOR CURRENT (AMPI
10
N.
~
u
4
~~
IC· 2.S A \ SA
II "H- 1-1..
1
0.01
0.02 0.03 O.OS 0.07 0.1
0.2 0.3 O.S 0.7 1
lB. BASE CURRENT IAMPI
FIGURE 3 - COLLECTOR·EMITTER.
SATURATION VOLTAGE
2. B
2
2.4
,
I
I II
~
-t~
ICIIB ·10
w
C>
<
:;
">
>
-
TJ·1S0'C
O. S
I
o
0.1
0.2
0.3
,
~
//
w
2S'C
C>
.
/
~~
X ...
1. &
>
1. 2
O.S 0.7
IC. COLLECTOR CURRENT (AMPI
-
O.B
0.1
10
IIII
ICIIB· S
-VBE(,nl@3 V· VCE
~
c
/
-----
TJ = 25°C
S 7 10
VBEI",I @ IC/IB • 10
....
Ilc/IB·~
1.S
3
FIGURE 4 - BASE·EMITTER VOLTAGE
2. S
II
~
"
~
2
25°C
"
----
~
f0.2
...... ~
'/
V
.·I'SO'C
I
I
0.3
O.S 0.7
IC. COLLECTOR CURRENT IAMPI
10
FIGURE 6 - OUTPUT CAPACITANCE
FIGURE 5 - COLLECTOR CUTOFF REGION
100 0
104
-
/
iL 50 0
/
TJ - 12S'C
2
70 0
./
3 -VCE-250V
~300
/
~ 200
....
;:;
100'C
./
7S'C
./
TJ·2S'C
~,100
I
5
"'" 'r-.
0
7
~ 50
c
0
Q
U
20
1
'"'
:::>
~R"'''''
10- 1
·0.2
t--Fi rward
2S'C
+0.2
/
+0.4
+0.6
+O.B
VBE. BASE·EMITTER VOLTAGE (VOLTSI
4-470
10
. 0.4 0.&
C,'b
4 & 10
20
40 &0
VR. REVERSE VOLTAGE IVOLTSI
100
200
400
MJ10013, MJ10014
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOlsus)
RESISTIVE
SWITCHIN
RBSOA ANO INOUCTIVE SWITCHING
Pulse ~V
[
Width]
Pulse Width
adjusted 10
O. MJE210
IRII'II\t.~e
CS M1E200
SWItt.hin;.
PW V.ned to
Ie" 2S0mA
Puls.1Il Width
An.i.,
21\,~9;;)7
2""2222
03 1NJ762
.obtain spac,f,ed
Ie
01
02
.. SO psi
Len,1 = 180,uH
Rcoll ~ 005H
Vee
~
tN914
02
1N914
OJ
lN914
Vcc- 2S0v
RL" 25 n
20V
Pulse W,dlh - 50 JJI
OUTPUT WAVEFORMS
INDUCTIVE TEST CIRCUIT
01
RESISTIVE TEST CIRCUIT
t1 AdJusted 10
Obtain Ie
..."'
S
u
a:
U
...
...~.
S-Abov. fOf
Oetai'5d Conditions
Tast Equipment
Scope - TekUOnll!
475 or Equivalent
SWITCHING TIME NOTE
tsv = Voltage Storage Time, 90% lSI to 10% Vcl amp
trv -" Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
te = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the turn·off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.
- continued -
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
....... i-""'"
./
Vtl~mp_
'\
90% V,I.mpj
-
/
VeE
100V,lamp
r-
-- --\- -- --- --
""'-"""
I"
10% ' "
ICPK-
90% 101
.,.~
I
./
IC"IOA
10,"1 A
1\ 90% Ie
5.0
I
ii!
--J 1- 1, - \ I-
lO-
I--- r-
'rvffl~'fi- - l l i -
~ r-Isv
IC ..........
FIGURE 8 - PEAK REVERSE CURRENT
8.0
I~
:s"
ffi
- -
/
V
..........
~
~i;
. . . .V
V
2.0
./
1.0
1.0
2.0
.
5.0
VBEioff).-BASE.EMITTER VOLTAGE (VOLTS)
TIME
4-471
8.0
•
MJ10013, MJ10014
TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during' the crossover interval and can' be obtained
using the standard equation from AN-222:
PSWT = 1/2 Vcclc(tcl f
In general, trv + tfi "" tc. However, at low.er test currents this relationship may not be valid.
As is common w.ith most switching transistors, resistive
switching is specified at 2SOC and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCH MODE" transistor are the inductive
switching speeds (t c and tsv) which are guaranteed at
•
lOOoC.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN-ON TIME
1. 0
O. 7~TJ-25OC
o. 5~ IC/lo = 10
r- VCC = 250 V
O.3
O. 2
0.7
t,V
0.5
/
j
"-
~ o. I
:.0.07
~
-
0.0 5
0.03
0.0 2
0.0 1
1
FIGURE 10 - TURN-OFF TIME
1
td
I--
r-
0.3
~
V
r-t--.
f"-..
VOEloff)· 5 V
VCC=250V
Icilo = 10
TJ=rO C
0.2
-
--
....-
t\
O. 1
1.5
1.5
10
IC. COLLECTOR CURRENT lAMP)
10
IC. COLLECTOR CURRENT lAMP)
FIGURE 11 - THERMAL RESPONSE
I
TIME Imsl
4-472
MJ10013, MJ10014
SAFE OPERATING AREA INFORMATION
The Safa Operating Arsa figures shown in Figura 12 and 13 are
specified for thoses devices undor th. tent conditions mown.
FORWARD BIAS
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
50
;;0
'"
~
20
10
100",
5
S
lms-
2
1
DO
=>
'-'
0.5
DO
0
~
5m'
de
0.2
- BONDING WIRE LIMITED
- -THERMALLY LIMITED
0.1
8 0.05
SECONO BREAKOOWN lIMITEO
CURVES APPLY BELOW RATEO VCEO
~ 0.02
~mm; ~~
0.01
0.005
0.7 1
500
700
10
100
200
5
2
50
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA
10
I
I
REVERSE BIAS
I
Turn· off load line
;;0
8
'">-
S
~DO
r-- boundary for MJ10014
r--- The locus for MJ10013
is 50 volts less.
6
a
'"
8j
0
4
8
2-
~\
2)-
[\.. v
"
~ 1'0..
r---
j
0
i--' VBE(olf) - 5 V
l\"
100
TJ ';;100oC
./
'1
O~
V
~ t-...
IC/ I B"5
400
500
600
200
300
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC- VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dis~ipation than the curves indicate.
The data of Figure 12 is based on TC = 25 0 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve
on Figure 14.
T J(pk) may be calculated from the data in Figure 11.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
For inductive loads. high voltage and high current
must be sustained simultaneously during turn·off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping. RC snubbing, load line
shaping. etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and represents the
voltage·current conditions allowable during reverse biased
turn·off. This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
Figure 13 gives the complete RBSOA characteristics.
700
FIGURE 14 - POWER DERATING
100
0
0
~ t-.....
"
i'---.
1"-.... .......
"-
~
Second Breakdown Qeratlng
......;:..
.................
~
ThermalOeratlng
0
r----..
........
"
.........
0
"'" "-....
o
o
40
120
TC. CASE TEMPERATURE (DC)
80
4-473
160
200
MJI0015
MJI0016
50 AMPERE
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
•
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 and 500 VOL TS
250 WATTS
The MJ10015 and MJ10016 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for lineoperated switch mode applications such as:
• Switching Regulators
• Motor Controls
• Inverters
• Solenoid and Relay Drivers
• Fast Turn-Off Times
1.0 lIS (max) Inductive Crossover Time - 20 Amps
2.5 lIS (max) Inductive Storage Time - 20 Amps
• Operating Temperature Range -65 to +200 o C
• Performance Specified for
Reversed Biased SOA with Inductive Loads
Switcliing Time\ with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ10015
Collector·Emitter Voltage
VCEOlsus)
400
Collector·Emitter Voltage
VCEV
600
I MJ10016
I 500
I 700
Unit
Vdc
Vdc
Emitter Base Voltage
VEB
B.O
Vdc
Collector Current - Continuous,
IC
ICM
50
75
Adc
IB
IBM
10
15
Adc
PD
250
143
1.43
Watts
W/oC
TJ, T stg
-65to +200
°c
-Peakll)
Base Current - Continous
- Peak (1)
Total Power Dissipation @TC =: 2SoC
@TC=100oC
Derate above 25°C
Operating and Storage Junction
STYLE 1,
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8" from Case for 5 Seconds
Symbol
Max
Unit
ROJC
TL
0.7
°CIW
275
°c
PIN 1. BASE
2. EMITTER
CASE. COllECTOR
DIM
A
B
C
D
E
F
G
H
J
K
n
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle';; 10%
R
MILLIMETERS
MIN
MAX
38.35
19.30
6.35
1.45
-
29.90
10.61
5.21
16.64
11.18
3.84
24.89
39.37
21.0B
1.62
1.60
3.43
30.40
11.18
5.72
17.15
12.19
4.09
26.67
INCHES
MIN
MAX
1.510 1.550
0.760 0.830
0.250 0.300
0.057 0.063
0.135
1.111 1.191
0.420 0.440
0.205 0.225
0.55 O.
0.440 0.480
0.151 0.161
0.980 1.050
-
CASE 197'()1
MOOIFIEO TO·3
SWltchmode IS a trademark of
Motorola. Inc.
4-474
MJ10015, MJ10016
ELECTRICAL CHARACTERISTICS (TC = 2SoC unle.. otherwise noted)
Characteristic
Symbol
Min
Typ
Max
400
500
-
-
Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1)
(lC
= 1~0 mA, IB =0, Vel amp = Rated VCEO)
Collector Cutoff Current
IVCEV = Rated Value, VBE(offl
= 1.5 Vde)
Emitter Cutoff Current
(VEB
= 2.0 Vde,
IC
Vde
VCEO(sus)
MJ10015
MJ10016
=0)
ICEV
-
-
0.25
mAde
lEBO
-
-
350
mAde
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
See Figure 7
Clamped Inductive SOA with Base Reverse Biased
See Figure 8
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 20 Ade, VCE
(lc' 40 Ade, VCE
= 20 Ade, IB = 1.0 Ade)
= 50 Ade,IB = 10Ade)
= 20 Ade, IB = 1.0 Adcl
Diode Forward Voltage (2)
(IF
-
-
-
2.2
5.0
VBE(sat)
-
-
2.75
Vile
Vf
-
2.5
5.0
Vde
Vde
VCElsat)
Base-Emitter Saturation Voltage
(lC
-
25
10
Collector-Emitter Saturation Voltage
(lC
(lC
-
hFE
=5.0 Vde)
= 5.0 Vde)
= 20 Ade)
DYNAMIC CHARACTERISTIC
Output Capacitance
(VCB = 10 Vde, IE
=0, f test = 100 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 11
Delay Time
Rise Time
Storage Time
IV CC = 250 Vde, IC = 20 A,
IBl = 1.0 Ade, VBE(off) = 5 Vde, tp
= 251's
Duty Cycle .. 2%1.
Fall Time
td
-
0.14
0.3
I'S
t,
0.3
1.0
I'S
ts
-
0.8
2.5
ps
tf
-
0.3
1.0
I'S
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
(lC = 20 A(pk), Vel amp -250 V, 'Bl
VBEloff) = 5.0 Vde)
11) Pulse Test: Pulse Width
= 1.0 A,
te
= 300 I'S, Duty Cycle .. 2%.
-
t s•
I
1'.0
I
0.36
I
2.5
I
1.0
I
(2) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads_ Tests have shown that
the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
4-475
I'S
ps
MJ10015, MJ10016
TYPICAL CHARACTERISTICS
FIGURE 2 - COLLECTOR·EMITTER
SATURATION VOL TAGE
FIGURE 1 - DC CURRENT GAIN
100
z
~
2.4
......
50
I'-.
V
....
i
~
..
o
°v
;
~
I'\.
\
TC~25'C
VCE ~ 5.0 V
2
J
I
2.0
1.6
~
"''"
«
\
~
VJ
1.2
0
10
2.0
5.0
IC, COLLECTOR CURRENT lAMPS)
1.0
20
V
'TJ 25'C
-r-i-""
J-:I--"
TJ
O.S
5.0
0.5
VV
~
>
,;
,\
0
A
'(j
ICIIS ~ 10
0
50
~150'C
!----
0.4
0.5
f I II
5,0
2.0
1.0
10
20
IC, COLLECTOR CURRENT lAMP)
FIGURE 3 - BASE·EMITTER SATURATION VOLTAGE
FIGURE 4 - COLLECTOR CUTOFF REGION
2.S
10 4
2.4
3
r=VCE·250 IV
/11
~o
ICIIS ~ 10
2. 2. 0
'""'
~
o
>,
./
1, 6
>'
O.S
0.5
V
TJ ~ 25'C
.....- I- r--
-
2
V
V V
V
t-- t-'000C
I
V
l--'
i
2,0
./
2
r-- r-750C
FORWARD
!+REVERSE
1-:TJ......~ 150'C
1.0
IL
r-- TJ • moc
°F=F=25 0C
I
5,0
10
20
10' I
-02
50
to 2
IC, COLLECTOR CURRENT lAMP)
FIGURE 5 - OUTPUT CAPACITANCE
150 0
J
100ot-----
.......
TJ ~ 25°C
0
........
0
I"-.....
0
100
0,4
+04
VSE, SASE EMITTER VOLTAGE IVOLTSI
...... r---
1.0
4,0
10
40
VR, REVERSE VOLTAGE IVOLTS)
4-476
100
400
+06
50
MJ10015, MJ10016
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOhusl
RESISTIVE
SWITCHING
VCEX AND INDUCTIVE SWITCHING
TURN ON TIME
'"2
... 0
~E
20
-2
o
PUIIIl W,dth
181 .dluued to
adjusted to
obtain the forced
obtain ,peclf,ed
U
hFE dll.,rad
Ie (Reslltlllit
TURN-OFF TIME
SWitching.
Pul.e Width
• 25 ~II
.
PW Varied 10 Attain
Ie = 100 mA
Use inductive SWitchinG
circuit •• tho Input to
the rll.lstlvlI test Circuit.
Leoil
=
01
02
03
04
180 j.lH
Rcoil = 005!l
Vee'" 20 V
INDUCTIVE TEST CIRCUIT
OS
01
02
03
2N2907
2N2222
2N3762
MJE210
MJE200
lN914
1N914
1N914
VCC=2S0V
RL'" 12.SS"!
Pulse W,dth'" 25 j.J.S
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
11 Adjusted to
Obtain Ie
'"...S
LconflCpk)
u
'1
'ij..."
A:---VCC-
12'" Leo.1 (lCpk)
...'"w
Vclamp
veEt vc""[::'
~mp
T,~.
Teu EqUipment
Scope - TektrorulC
475 or EqUivalent
1--'2-1
-Adjust -V such that VBE(off) = 5 V except as required for RS SOA (Figure 12),
FIGURE 6 - INDUCTIVE SWITCHING MEASUREMENTS
IC~
/
!--"'"
.,;"
IC""""
"10.
-
I1\ 90% IC
ffllJt 'H-- ";-
90% Vclilmp
f-- - t s v
' rv
~ f-l,-\
r--
V
1,\
10% Vclamp
VCE
l a -i -
Vcl amp _
I~
1
90%IBI
-- --\- -"
"-"
-
---
10% .......
IC pK -
tsv
trv
tfi
tti
tc
-;\i;
- -
= Voltage Storage Time, 90% IB1 to 10% Vcl amp
= Voltage Rise Time, 10-90% Vclamp
= Current Fall Time, 90-10% IC
=
Current Tail, 10 - 2% IC
= Crossover Time, 10% Vcl amp to 10% IC
For the designer, there is minimal switcning loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN·222:
TIME
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been' defined and apply to both current a~d
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine the
total switching time. For this reason, the following new
terms have been defined.
'
In general, trv + tfi == tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified and has become a benchmark for
designers. However, for designers of high frequency con·
verter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (tc and tsv) which are guaranteed.
4-477
~Jl0015,
MJ10016
SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions shown.
FORWARD BIAS
FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC- VCE
limits of the transistor. that must be observed for reliable
operation: i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The datal of Figwe 7 is based on TC = 25 0 C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found
at any case temperature by using the appropriate curve
on Figure 9.
10lis
o
~ 10
'"
,., 5.0
de
I-
•
~ 2.0
g; 1.0
~ 0.5
o
~ 0.2
j O.I~
MJI0015
20.05~
EO.02
0.01
O.OOS
1.0
MJIOOl6
TC - 25 0 C
==
BONDING WIRE LIMIT
THERMAL LIMIT
ISINGLE PULSE)
SECONO BREAKOOWN LIMIT
2.0
5.0
10
20
50
100
200
500
1000
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
REVERSE BIAS
FIGURE 8 - REVERSE BIAS SWITCH)NG
SAFE OPERATING AREA
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse biased_
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 8
gives the complete R BSOA characteristics.
50
1\
\
1i!
40
i
30 -
,.,'"
i3
'"
0
~
2
E
\
Turn off load Line
Boundary fer MJ10016
\
_ The locus for MJ 100 15
IS 100 V less
20
\
\.
-~>IO
"- I'--..
IBI
10
VBElolf)' 5.0 V
-TC'25 0 C
I
I
o
100
o
200
300
400
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTS)
500
FIGURE 10 - TYPICAL REVERSE BASE CURRENT
versus VBEloff) WITH NO EXTERNAL BASE RESISTANCE
FIGURE 9 - POWER DERATING
100
~ t--....
0
...........
" "'"
........
Therma~
Deratmg
--IiI
r-...
Derating
r---...
,
~
/'"
-
/"
3
"-
0
40
BO
120
TC. CASE TEMPERATURE IOC)
160
/
5
.............
"-
o
o
,/
/'"
Forward Bias
Second Breakdown -
V
IC' 20 A
V
2 ~ See Table 1 for conditions,
Figure 6 forwaveshape.
"'" ""-
1
0
200
4-478
2
4
6
VBElolf). REVERSE BASE VOLTAGE (VOLTS)
PNP
MJI1011, MJI1013,
MJI1015
NPN
MJII012, MJI1014,
MJI1016
HIGH·CURRENT COMPLEMENTARY
SILICON TRANSISTORS
30 AMPERE
. for use as output devices in complementary general purpose
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
amplifier applications.
•
High DC Current Gain - hFE ; 1000 (Min) @ IC; 20 Adc
•
Monolithic Construction with Built·ln Base·Emitter
Shunt Resistor
•
Junction Temperature to +200 o C
60·120 VOLTS
200 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
MJll0ll MJll013 MJll015
MJll012 MJll014 MJll016
60
120
90
120
Unit
Vdc
Collector-Base Voltage
VeB
Emitter-Base Voltage
VEB
5
Vdc
60
90
Vdc
Collector Current
IC
30
Adc
Base Current
IS
Total DeVice Dlsslpatlon@Tc = 25°C
Derate above 25°C @TC; 100°C
PD
1
200
115
Watts
TJ.Tstg
-55 to +200
DC
Operating and Storage Junction
Adc
WloC
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MaXimum Lead Temperature for
Soldering Purposes for < 10 Seconds.
Symbol
RUJC
Max
0.87
TL
275
Unit
DC/W
DC
PIN 1 BASE
2 EMITTER
CASE' COLLECTOR
FIGURE 1 - DARLINGTON CIRCUIT SCHEMATIC
Collector
PNP
MJ11011
MJll013
NPN
---,
---,
~--+-,
MJ11015
Base
I
IL _ _ _ _ _ _ _
~--+-,
I
I
I
I
I
I
I
__ ...11
DIM
Collector
I
I
I
I
I
I
Base
1
1
__ ...1
A
B
C
Emitter
-
39.37
-
1550
635
G 10.67
H 5.33
J
K
n
16.64
11.18
3.84
-
11 18
5.59
17.15
12.19
4.09
26.67
0.420
0210
0.655
0.440
0.151
-
Cul1ector connected to
CASE 11·01
TO·3
4-479
INCHES
MIN
MAX
2f~ 'lf150 ~{~~
o039~ O~043
r-4- r!!~- ~
·0135
343
~
F Ig-jjJ 3ii~40 f-[;/T [197
R
Emitter
MILLIMETERS
MAX
MIN
ca~e.
0440
0.120
0.675
0.480
0.161
1.050
MJ11011, MJ11013, MJ11015PNP/MJ11012, MJ11014, MJ11016NPN
I
ELECTRICAL CHARACTERISTICS ITe
2SoC unless otherwIse noted I
=-
Characteristic:
Symbol
M..
Min
Un,t
OFF CHARACTERISTICS
Collector-Em Iller Breakdown Voltagell)
60
90
120
MJ1101',MJtl012
MJ11013,MJ11014
MJ11015.MJ11016
Collector EmItter Leakage Current
(VeE = 60 Vdc, ABe = 1 k ohm I
(VeE" 90 Vdc, RBe" 1 k ohml
(VeE" 120 Vdc, RBE .. 1 k ohm)
(VeE" 60 Vdc, RBE 0- 1 k ohm,
TC - 150 0 CI
(VeE" 90 Vdc, RaE
1 k ohm,
TC" 150°C)
iVeE " 120 Vdc, ABe
TC = 150°C)
Vdc
BVCEO
ftC" 100 mAde, JS '" 0)
mAde
leER
MJ11011.MJll012
MJ11D13,MJ11014
MJ11015,MJ11016
MJ11011,MJ11012
MJ11013,MJ11014
MJ11015,MJ11016
1 k ohm,
Emitter Cutoff Current
IVSE . 5 Vdc,
Ie
=- 0)
Collector-Emltler leakage Current
(VeE" 50 Vdc, '8 - 0)
ON CHARACTERISTlCsl11
DC Current GaIn
flC '" 20 Adc, VCE = 5 Vdcl
IIc "" 30 Adc, VCE = 5 vdcl
COllector· Emitter SaturatIOn Voltage
IIC:' 20 Arie, IS '" 200 mAdel
IIC = 30 Ark, IS" 300 mAde)
Sase·Emitter Saturation Voltage
Ie = 20 Ade, IS '" 200 mAde}
IC '" 30 Ade, IS = 300 mAdel
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small·Slgnal Short·ClrCUlt
Forward Current Transfer RatiO
IIC'" 10 Ade, VeE = 3 Vdc, f " 1 MHz)
111 Pulse Test
Pulse Width -( 300 ~s, Duty Cycle
<:
2.0%
FIGURE 2 - DC CURRENT GAIN II)
30 k
FIGURE 3 - SMALL·SIGNAL CURRENT GAIN
--- PNP
MJll013, MJll015
MJ11011, MJ11014, MJll016
- - NPN MJll0ll,
10 k
1
z 10k
,
~
7k
~
5k
ag
!'
k
"-
""
2k
~
1
>-
~
\
0.05
a
...J
0.02
«
z
300
0.3
~
«
5 Vde
VCE
~Ji1n
VCE-3Vde'
IC -10 mAde'
TJ -1~OC
l
10
20
30
0.005
~
0.5 0.7
10
10
30
IC, COLLECTOR CURRENT lAMP)
FIGURE 4 - "ON" VOLTAGES II)
---
III
~50cl
I
TJ =
...
~
I,
V!l
i3
/ V, 'i
0.1
0.2
0.5
500 700 1.0 k
1-
0.5
'"
BONO',NG WiRE LIMITATION
THERMAL L1MITATlON@TC - 2SoC
SECOND BREAKDOWN LIMITATION
= 020.1
8
/
10
5
~
VBElsat)
o
300
10
10
r IcliB =100
VCElsall
50 70 100
100
I, FREQUENCY 1kHz)
FIGURE 5 - ACTIVE REGION DC SAFE OPERATING AREA
PNP MJ11011 , MJ 110113, M\11101~1
NPN MJll0l1, MJ11014, MJll016
1
,
0.0 1
t!)
700
500
PNP MJ11011, MJ11013, MJ11015
NPN MJll012, MJ11014, MJll016
0.05
MJ11011, MJ11012
MJ11013, MJll014
MJ11015, MJ11016
~ 0.02
0.01
10
50
100
10
10
30
50
70
100
200
VCE. COLLECTOR EMITTER VOLTAGE IVOL TS)
must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations 1m·
posed by secondary breakdown.
IC, COLLECTOR CURRENT lAMP)
There are two limitations on the power handling ability of a
transistor' average Junction temperature and secondary breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation, e g., the transistor
4-480
NPN
PNP
MJI1028 MJI1029
MJI1030 MJI1031
MJI1032 M111033.
Advance Infor:rnation
50 AMPERE
COMPLEMENTARY SILICON
DARLINGTON
POWER TRANSISTOR
HIGH-CURRENT COMPLEMENTARY
SILICON TRANSISTORS
• .. for use as output devices in complementary general purpose
amplifier applications.
o
60-120 VOL TS
300 WATTS
High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
•
e Curves to 100 A (Pulsed)
•
Diode Protection to Rated IC
•
Monolithic Construction with Built·ln Base-Emitter Shunt Resistor
•
Junction Temperature to +200 0 C
MAXIMUM RATINGS
MJ11028 MJ11030 MJ11032
Symbol MJ11029 MJ11031 MJ11033
60
90
120
VCEO
90
120
60
VC8
5
VE8
50
IC
100
ICM
2
18
300
PD
1.71
-55 to +200
TJ. Tstg
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Peak
\
Base Current-Continuous
Total Power Dissipation @ T C = 2SoC
Derate above 25 0 C @ T C = 100°C
Operating and Storage Junction
Unit
J:5tlJ
Vdc
Vdc
Vdc
Adc
T;
Adc
Watts
-ri'
0
~
---
SEATING
PLANE
W/oC
J-
°c
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Maximum Lead Temperature for
Soldering Purposes for" 1 a seconds
Thermal Resistance Junction to Case
Svmbol
Max
Unit
TL
275
DC
ROJC
0.584
DC
STYLE I:
PIN 1. 8ASE
2. EMITTER
CASE. COLLECTOR
FIGURE 1 - DARLINGTON CIRCUIT SCHEMATIC
PNP
Collector
Collector
NPN
--,
MJll029
r----+...,
.Base
I
I
I
I
I
I
I
I
__ .J
--,
MJll028
MJll030
MJll032
~----
../ V
'-'
w
~'
V
1.0
O.B
--
V
1.0
>
]
w
40
~
K
2.0
15~
1.5
/"
60
BO
100
120
Tc. CASE TEMPERATURE (oC)
>=
8.0 ~
'"o""
f.-
I;;
7.0
~
6.0
160
140
,
~]
~
e
og ;
.",-
/"
-.....
//
1.0
10
B.O
o
2.5
~
0.5
. 4-486
>=
:o
If
o
0.5
w
6.D~
-
ICM, COLLECTOR CURRENT (AMP)
~
,.
........
1'--:.' ~ ~ /
~
2.0
--
:;
FIGURE 9 - SWITCHING BEHAVIOR versus ICM
2
5!i
1.5
If
I---:- I--
20
9.0
V
I,
.......
/
/"
.,...-V
./'"
,..- V
0.5
O.B
IBI. BASE CURRENT (AMP)
r--
0.5
V
10
FIGURE 8 - OPTIMUM DRIVE CONDITIONS
o
. . . ><
0.6
IBI. BASE CURRENT (AMP)
ICM • 1.75 A. 18 • 0.85 A. La' 13 .H
LB.H
20
5.0
~ 0.5
I'-.......
4
./
FIGURE 7 - SWITCHING BEHAVIOR versus
TEMPERATURE
= 2.0 A
........
-----
2.0
...............
2.0
'""'- ...................
I\" t--...
0.4
IC = 1.5 A
l\
1\\ \
~
V
- -LB.H
4 ...........
@
1.0
1.5
2.0
ICM, COLLECTOR CURRENT (AMP)
I---
I;;
4.0
2.0
2.5
~
MJ12002
FIGURE 10 - THERMAL RESPONSE
1.0
:::
fi _
~O
x~
.... N
... :;
r5 ~
ina:
ZO
«Z
D. 7FD-O.5
D.5
O.31== 02
0.2
I-- 0.1
-
~: D. 11=:0.05
~ ~O.O 7::=:0.02
~;O.O5
::t ~O.03 :.-~~
0.02
-
0.0 1
0.01
....tC
-
"'""'
i--'
pITUl
tl;---J
IisJCld - ,(II RBJC
ROJC • I.S7 0CIW MIX
DUTY CYCLE. D ='1/'2
0.01
o CURVES APPLY FOR POWER
SINGLE PULSE
I II I
0.02 O.OJ
0.05
I III
0.1
02
0.3
0.5
2.0
1.0
3.0
10
5.0
II
I
JO
50
20
PULSE TRAIN SHOWN
READ TIME A"1
TJlpkl- TC =Plpkl ReJCld
100
200
JDO
5DO
1000
•
" TIME (m.1
FIGURE 11 - COLLECTOR SATURATION REGION
FIGURE 12 - DC CURRENT GAIN
en 5.0
JO
S
c
4.5
~
::g
4.0
~ 3.5
o
~
!:
ala:
3.0
2.5
2.0
o
~
_
1.5
1.0
8
W 0.5
'-'
:>
0
D.l
\
\
\ IC = 0.75
\
_\
\
:;;:
\2.0A
\ 1.5 A
\
\
1\
\
\.
-
t-0.2
0.3
0.4
0.5
-I-
......
I-
'"
~
a:
10
a
7.0
0
'-'
5.0
""" ......
"-
'-
~
1\
\.
"-
,
r- r-25DC
r-
z
\
VC~=5~OV
TJ1= I\mJc
20
TJ = 25°C
3.0
"-
~\
2.0
1.5
0.03
0.6 0.7 O.S 0.91.0
0.1
0.2
0.5
1.0
IC. COLLECTOR CURRENT (AMPI
0.05
IB, BASE CURRENT (AMPI
FIGURE 13 - "ON" VOLTAGES
2.0
1.6
~0
~
w
1.2
'"'"
S
o.S
0
VSE(,,"@ Iclla = 2.0
:-
I
::>
0.4
VCEI,,')@ IcllB = 2.0
I
o
0.2. 0.3
0.4
1000c
---
1.0
0.7
IC. COLLECTOR CURRENT IAMPI
0.5
4-487
)..
25DC
~ ~ 1.
100DC
L
L
,.../
25 DC
-
2.0
2.5
2.0
3.0
MJ12002
FIGURE 14 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
20
10
li:
:;:
-- - .... --
5
l-
e::
w
tr.
""
1.0
a:
:::I
(.)
.........
a:
0
I-
(.)
w
r.....
"
50 ~s=1=
1.0 ms
de
SINGLE
PULSE:
......
0.1
i'..
§TC=25 0 C
-'
-'
0
(.)
c3
0.01
---
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
.........
I"'
0.005
0.002
. 8.010
20
30
50
100
200 300
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
500' 800
NOTE:
There are two limitations on the power handling ability of a transistor: average junction
temperature and second breakdown. Safe operating area curves indicate Ie-VeE limits
of the transistor that must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves Indicate.
The 50 liS 58. curve is beyond the thermal limits of this part. However, the parts will
survive a transient that remains within these S8 limits without failing.
4-488
IJ12004
I
De!Signe'rs Data Sheet
:,
5 AMPERE
NPN SILICON
.
POWER TRANSISTORS
HORIZONTAL DEFLECTION TRANSISTOR
1500 VOLTS
100 WATTS
, , , specifically designed for use in large screen color deflection
circuits,
, Designer's Data for
"Worst Case" Conditions
• Collector-Emitter Voltage - VCEX = 1500 'Vdc
• Glassivated Base-Collector Junction
• Safe Operating Area 50 Ils = 20 A, 400 V
The Designers Data Sheet per·
mits the design of rnost circuits
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.
@
• Switching Times with Inductive Loads tf = 0.4 IlS (Typ) @ IC = 4.5 A
MAXIMUM RATINGS
Symbol
Rating,
Collector-Emitter Voltage
VCEOlsusl
VCEX
MJ12004
750
Vdc
VEB
5.0
Vdc
Collector Current - Continuous
IC
5.0
Adc
Base Current - Continuous
IB
4.0
Adc
Emitter Current - Continuous
IE
9.0
Adc
Po
100
Watts
T J, Tstg
0.8
-65 to +150
Emitter Base Voltage
Total Power Dissipation @TC
=
2SoC
@TC= 100°C
STYLE I:
PLANE
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
40
Derate aboye 25 0 C
Operating and Storage Junction
I~'
Es~1
Vdc
1500
Collector-Emitter Voltage
lr~
Unit
wfDc
DC
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Symbol
A6JC
Max
1.25
°crw
TL
275
DC
Purposes: 1/8" from Case for 5 Seconds
Unit
MILLIMETERS
DIM MIN MAX
A
B
C
0
6.35
0.99
11
G
J
K
n
R
39.37
21.08
7.62
1.09
3.43
INCHES
MAX
MIN
-
0.250
0.039
30.40 1.177
11.18 0.420
5.59 0.210
1
17.15 0.655
I.
12.19 0.440
3.84
4.09 0.151
28.67
Collector conn.cted to c...
-
-
CASE 11-01
TO-3
4-489
1.550
0.S30
0.300
0.043
0.135
1.197
0.440
0.220
0,675
0.480
0.161
1.050
•
MJ12004
ELECTRICAL CHARACTERISTICS (TC = 250 unless otherwise noted.)
I
C.....ct..iltlc
OFF CHARACTERISTICS (I)
Collector-Emitter Sustaining Voltage
(lC -50 mAde.IB =01
Collector Cutoff Current
(VCE ~ 1500 Vde. VBE = 01
Emitter Cutoff Current
(VBE = 5.0 Vde. IC ·0)
ON CHARACTERIST.ICS (1)
•
Symbol
Min
Typ
Max
Unit
VCEO(susl
750
-
-
Vdc
1.0
mAde
1.0
mAde
ICES
lEBO
Collector-Emitter Saturation Voltage
(lC = 4.5 Adc. IB = 1.8 Ade)
(lC = 3.5 Ade. IB = I .5 Adel
B_ Emitter Saturation Voltage
(lC = 4.5 Ade. IB = 1.8 Ade)
(lC = 3.5 Ade. IB = 1.5 Adel
Second Breakdown Collector Current with Base
Forward Bia~
DYNAMIC CHARACTERISTICS
VCE(satl
-
-
-
-
-
-
-
-
Vde
VBE(sat)
-
0.'
. 1.6
1.5
-
See Figure 14
ISIb
Current-Gain - Bandwidth Product
(lC = 0.1 Ade. VCE =5.0 Vde. 'test = I MHz)
Output Gepacitence
(VCB =10 Vde. IE =
= O. I MHzl
Vdc
5.0
5.0
'T
-
4
-
Cob
-
125
-
MHz
pF
~
SWITCHING CHARACTERiSTICS
Fall Time
(lC = 4.5 Ade. IBI = 1..11 Ade.
lB = B.O pH. See Figure 11
TC=250C
TC = 100°C
(11 Pulse Test: Pulse Width < 300
"s. Duty Cyele = 2%.
\
+60V
Com
2 kl5W
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT,
820
5W
100
Ie
L
•10,.F
25V
+
3
MR918
(Selected
1500 VI
e
5W
10"F
150 V
Pul.. Width Adj
150% Duty Cycl.
-=
Ie
DRIVER TRANSFORMER (T1)
L
A
mH
3.5
0.87
0.013
4.5
0.67
0.017
+
Ion
5W
Com +125 V
Motorola part number 25068782A-QS·1/4"laminate "e" iron cor'a.
Primary Inductance - 39 mHo Secondary Inductance - 0.22 mHo
Le.kage Inductance with primary shorted - 2.0 IJ.H. Primary 260
turns, #28 AWG enamel wlr.. Secondary 17 turn., #22 AWG
enamel wir•.
4-490
MJ12004
BASE DRIVE: The Key to Performance
in Figures 4 and 5. This shows the parameter that really
matters, dissipation; whether caused by switching or by
saturation. The negative slope of these curves at the left
(low IB1) is caused by saturation losses. The positive slope
portion at higher IB1, and low values .of LB is due to
switching losses as described above. Note that for very low
LB a very narrow optimum is obtained. This occurs when
IB1 hFE = ICM' and therefore would be acceptable only
for the "typical" device with constant ICM. As LB is in·
creased, the curves become broader and flatter above the
IB1 hFE = ICM point as the turn·off "tails" are brought
under control. Eventually, if LB is raised too far, the
dissipation all across the curve will rise, due to poor
initiation of switching rather than tailing. Plotting this
type of curve family for devices of different hFE' essen·
tially moves the curves to the left or right according to the
relation IB1 hFE = constant. It then becomes obvious
that, for a specified leM' an LB can be chosen which will
give low dissipation over a range of hFE and/or IB1' The
only remaining decision is to pick IB1 high enough to
accommodate the lowest hFE part specified. Figure 8
gives values recommended for LB and IB1 for this device
over a wide range of ICM' These values were chosen from
a large number of curves like Figure 4 and Figure 5.
Neither LB nor IB1 are absolutely critical, as can be seen
from the examples shown, and values of Figure 8 are
provided for guidance only.
By now, the concept of controlling the shape of the
turn·off base current is widely accepted and applied in
horizontal deflection design. The problem stems from
the fact that good saturation of the output device, prior
to turn·off, must be assured. This is accomplished by
providing more than enough IB 1 to satisfy the lowest gain
output device hFE at the end of scan ICM. Worst·case
component variations and maximum high voltage loading
must also be taken into account.
If the base of the output transistor is driven by a very
low impedance source, the turn·off base current will reo
verse very quickly as shown in Figure 2. This results in
rapid, but only partial, collector turn·off, because excess
carriers become trapped in the high resistivity collector
and the transistor is still conductive. This is a high dissipa·
tion mode, since the collector voltage is rising very rapidly.
The probfem is overcome by adding inductance to the
base circuit to slow the base current reversal as shown in
Figure 3, thus allowing excess carrier recombination in the
collector to occur while the base current is still flowing.
Choosing the right LB is usually done empirically, since
the equivalent circuit is complex, and since there are
several important variables (lCM' IB1' and hFE at ICM).
One method is to plot fall time as a function of LB, at the
desired conditions; for several devices within the hFE
specification. A more informative method is to plot power
dissipation versus IB1 for a range of values of LB as shown
TEST CIRCUIT WAVEFORMS
FIGURE 2
FIGURE 3
Ie
Ie
(time)
(time)
TEST CIRCUIT OPTIMIZATION
The tost circuit may be used to evaluate devlcos In the conventional mannor, I.e •• to measure fall tlmo, storage time, and
saturation voltage. However, this circuit was designed to evaluate
Once the required tran,lstor operating current II determined,
fixed circuit values maY be selected from the table. Factory telt~
ing Is performed by roadlng the current meter only, since the
input power Is proportional to current. No adjustment of the
test apparatus Is required.
devices by 8 simple criterion, power supply input. ExcelSlve
power Input can be caused by a varlotY of problems, but It Is the
dlulpat:lon In tho trans'stor that Is of fundamental Importance.
4-491
•
MJ12004
FIGURE 4 - OPTIMIZING DRIVE@3.5A
FIGURE 5 - OPTIMIZING DRIVE @ 4.5 A
16
3
\\
5
\
I
\\\
/
LB.H
\\\ ~
16
\'\P. -.. . . . . ~
4"t<.
V
,~ \.
\~ ~
-
~\
-
.\
-
V
LBpH
--
12
\ '«)
~
""-"
4"
2-
./
~
•
9
I"'""
o
12
0.5
1.5
o
0.5
FIGURE 6 - SWITCHING BEHAVIOR versus
TEMPERATURE
ICM· 3.5 A. IB = 1.5 A. LB = 14 /JH
2
I
.-
9.5
ISV
,.
w
;:
....
....
I
,/
~
::
O.5
./
II
o
-
f-- r-
o.5
40
100
60
120
80
TC. CASE TEMPERATURE (OCI
'/
.
II:
II:
:::>
-
-
140 ISO
g
3.5
9
. . . r-........
5
...............
4.5
--
5
B
-....!.OoltINllt_
Is
7
............... r--....
I
r-
6
140150
I
t'-....
La
NOoltIN1,,£,,--
3
120
60
80
100
TC. CASE TEMPERATURE (OCI
FIGURE 9 - SWITCHING BEHAVIOR versus ICM
I
0.5
o
40
20
NOMINAL
............. ....,.,
!
!--f.-- r-
/'
20
,..--- ~
.............
J
/"
FIGURE B - OPTIMUM DRIVE CONDITIONS
11.5 r--.../ K
E
J
0
8
20
/
......-
/"
I
Z
o
~
I.5
V
V
1.5
FIGURE 7 - SWITCHING BEHAVIOR versus
TEMPERATURE
ICM = 4.5 A.IB = 1.75 A. LB = B/lH
/'
V
I.5
]
I
'BI. BASE CURRENT (AMPI
IBI. BASE CURRENT (AMPI
I'--...
NOMINAL
II
6
5
4
I
3
o
o
3
3.5
4.5
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMPI
4-492
2
MJ12004
~:::;
'"
~
;;S
~
~
I;;
~
FIGURE 10- THERMAL RESPONSE
1.0
0.7
0.5 l - I- ~ Ruchl = r(t)RUC
I-- l- I- RSJC = 1.250CIW Max
0.3 I-- lTJ(pk) -TC = P(pkIRSJCftl
0.2 l - I-
V~
~
0.1
~
'" 0.07
ffi 0.05
'"
%
....
I-
0.03
ffi
;;; 0.02
z
;2 0.01
I-
0.02
0.5
0.2
0.1
0.05
1.0
2.0
5.0
t,TIME(ms)
20
10
50
FIGURE 11 - COLLECTOR SATURATION REGION
~
TJ = 100°C
2.4
to
1\
1\
~
>
~
:::
~
1.6 I -
~
0.8
8
0.4
~
>
z
~:lc=2A
II
-
II
I - t13 A
;;:
I
to
~3.5 ~4A
\
1.2
o
1.0k
2.0 k
ffi
4.5 A
0:
0:
\
I
u
o
\
\
\
~
0.5
['--.,
25°C
7
I'
":-
5
,'-.
~
\.
"-
\
a
13
\
1\
\
I
~
3
r--
2. 0
0.05 007 01
0.7
IB' BASE CURRENT (AMPI
0.2 0.3
0.5 0.7 I
'C, COLLECTOR CURRENT (AMPI
FIGURE 13 - "ON". VOLTAGES
1.4
1. 2
in
::;
J
1
TJ = 25°2
o
~
w
O. B
::;
'"o
O.6
to
>
:>
VCP 5 V
1"'"
I-
0
0.3
500
FIGURE 12- OCCURRENTGAIN
w
o
200
20
~ 2.8
o
100
VBE("t)@IC/'B = 2
i---'"":
1-11-1-
f-""
VfW1 @'C~'B ={
25°C
I
0.1
0.2
t-
~
o
0.05
1
1000~..7 ~
O.4
O. 2
~~
J.....-'
,......!-"'"1000C
0.3
0.5 0.7
IC, COLLECTOR CURRENT (AMP)
4·493 .
t-
•
MJ12004
FIGURE 14 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
50
,....
20
1.0
•
a::
:=
c..>
~
....I
8
U
-I-
2PULSE~~
SINGLE
10
5.0
2.0
50lls
...
'_
1.0 ms
....
0.5
....
-
de
0.2
o. 11::
0.05
0.02
0.0 1
0.005
8.010
TC =25°C
---BONDING WIRE LIMIT
---THERMAL LIMIT
"""'""-SECOND BREAKDOWN LIMIT
I..........
40
100
20
60
200
400
VCE, COLLECTOR·EMITTER VOLTAGE (VOLT)
NOTE:
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operatin~ area curves indicate Ie-VeE
limits of the transistor must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The 50 IlS 58 curve is beyond the thermal limits of this
part. However, the parts will survive a transient that remains
within these 58 limits without failing.'
4-494
600 800
MJ12005
Advance InforIDation
8 AMPERE
NPN SILICON
POWER TRANSISTOR
HORIZONTAL DEFLECTION TRANSISTOR
.. specifically designed for use in deflection circuits.
o VCEX
1500 VOLTS
100 WATTS
= 1500 V
•
o Glassivated Base·Coliector Junction
•
Safe Operating Area @ 50 /1S = 20 A, 400 V
MAXIMUM RATINGS
Symbol
Value
Unit
VCEX
1500
Vdc
VES
5.0
Collector Current - Continuous
IC
8.0
Vdc
Adc
Base Current - Continuous
IS
4.0
Adc
Emitter Current
IE
12
Adc
PD
100
0.8
Watts
W/oc
'TJ, T stg
-65 to + 150
°c
Symbol
Max
Unit
ROJC
1.25
TL
275
°CNv
uc
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous
Total Power DISSipation @ T C
25°C
Derate above 25°C
Ope~at1ng
and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for
Soldering Purposes: 1/8" from
Lrr='~3~
r~K
ESEATlN!~
I
PLANE
Case for 5 Seconds
FIGURE 1 - MAXIMUM FORWARD BIAS SAFE OPERATING AREA
50
ii!
'"
~
SINGLE PULSE
10
!O
1m,
0-
a
STYLE I:
PIN I. BASE
1. EMITTER
CASE: COLLECTOR
50,us
MILLIMETERS
DIM MIN MAX
10
A
'"
~8
~
B
de
0.1
=.
--
001 ='
0005
10
This
IS
C
D
E
F
G
H
J
K
WIRE LIMIT
---IBONDING
HE'RMALL Y LIMITED @TC '15°C
~ECONO
BREAKDOWN lI_r.lIT
100
10
30 40 50
500
VCE, COLLECTOR EMITTER VOLTAGE IVOL TS)
' 1000
advance information and specifications are subject to change without notice.
4-495
n
R
-
INCHES
MIN
MAX
-
39.37
11.0B
7.61 0.150
1.09 0.039
3.43
19.90 30.40 1.177
1067
11.18 0.420
5.33
5.59 0.110
16.64 17.15 0.655
11.18 11.19 0.440
3.B4
4.09 0.151
16.67
Collector connected 10 case.
CASE 11·01
ITO·3)
-
635
0.99
-
1.550
0.B30
0.300
0.043
0.135
1.197
0.440
0.110
0.675
0.480
0.161
1.050
MJ12005
ELECTRICAL CHARACTERISTICS
(TC • 25°C unless otherw;se noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEOsus)
750
-
-
Vde
ICES
-
-
0.25
mAde
IEeO
-
-
0.1
mAde
VCE(s.,)
-
-
5.0
Vde
1.5
Vde
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(VC' 50 mAde, Ie • 0)
Collector Cutoff Current
(VCE' 1500 Vde, VeE' 0)
Em itter Cutoff Current
(VeE ~ 5.0 Vde, IC • 0)
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(lC • 5.0 Ade, Ie • 1.0 Ade)
Base Emitter Saturation Voltage
(lC' 5.0 Ade, Ie • 1.0 Ade)
VeE(s.,)
Second Breakdown Collector Current with Base Forward Biased
•
-
IS/b
-
See Figure 1
SWITCHING CHARACTERISTICS
Fall Time
(lC' 5.0 Ade, le1 • 1.0 Ade, Le' 8.0 ~H
(11 Pulse Test: Pulse Width.;;; 300 ~s, Duty Cycle' 2%.
FIGURE 2 - DC CURRENT GAIN
20
-
I
t""T
10. -
r-...
I
V~E' 5~ V
........
TJ' 25°C
"'-
u
.#'"
5.0
3.0
2.0
0.1
0.3
0.5
2.0
1.0
5.0
'c. COLLECTOR CURRENT (AMPS
Com
2 k/5W
10
FIGURE 3 - SWITCHING TIMES TEST CIRCUIT
820
5W
100
IC
L
MR918
·10 '"'~ +
25 V
C
(Selected
3
5W
1500 V)
10~F
150 V
Pul •• WIdth Ad)
50% Duty Cycl.
':'
'On
5W
DRIVER TRANSFORMER (T1)
IC'
A
5.0
L
C
mH
~F
0.575
0.018
Com +125 V
Motorola part number 2?068782A-QS-1/4" laminate "Eu iron core.
Primary Inductance - 39 mHo Secondary Inductance - 0.22 mH,
Leakage Inductance with primary shorted - 2.0 lotH. Primary 260
turns, #28 AWG enamel wire, Secondary 17 turns, #22 AWG
enamel wire.
4-496
MJ13014
MJ13015
10 AMPERE
SWITCHMODE"" SERIES
NPN SILICON POWER TRANSISTORS
NPN SILICON
POWER TRANSISTORS
The MJ13014 and MJ13015 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where
fall time is critical. They are particularly suited for line operated
switchmode applications such as:
350 AND 400 VOLTS
150 WATTS
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Designer's Data for
"Worst Case" Conditions
The Designers· Data Sheet per·
mits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characterIStics boundaries are given to facil itate "worst case"
design.
Fast Turn - Off Times:
60 ns Inductive Fall Time @ 25°C (Typ)
120 ns Inductive Crossover Time@ 25 D C (Typ)
800 ns Inductive Storage Time @ 25°C (Typ)
Operating Temperature Range -65 to +200 o C
1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
J
MAXIMUM RATINGS
Symbol
MJ13014
Collector-Emitter Voltage
VCEO(sus)
350
Collector-Emitter Voltage
VCEV
550
Rating
Emitter Base Voltage
Collector Current
Base Current
Continuous
- Peak (1)
Continuous
- Peak (1)
Total Power Dissipation @TC
= 25 u C
Unit
400
Vde
600
Vde
I
VEB
6.0
Vde
IC
ICM
10
20
ADe
IS
IBM
5.0
10
Ade
PD
150
85.5
0.86
Watts
W/DC
-65 to +200
°c
@TC=1000C
Derate above 25°C
Operating and Storage Junction
Temperature Range
I MJ13015
I
TJ, T stg
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
E SEATING PLANE
Symbol
Max
Unit
ROJC
1.17
°CIW
TL
275
uc
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle" 10%.
-- 0
PIN 1 BASE
2 EMITTER
CASE COLLECTOR
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
-
3937
2108
762
109
343
-
1550
•
THERMAL CHARACTERISTICS
Characteristic
~B~--Hl~.
r
-tI
-
C 635
0 099
E
F 2990
G 10.67
H 5.33
J 1664
K 1118
Q
3.84
R
-
0250
0039
-
304ll
1.177
11.18
5.59
11.15
1219
0.420
0210
0.655
0440
0151
4.09
2667
-
CoUeC!olconnecudI0C_
CASE 11·01
TO·3
.. Trademark of Motorola Inc.
4-497
OB30
0.300
0043
0135
1197
0.440
0.220
06J5
0.480
0.161
1.050
MJ13014, MJ13015
ELECT'RICAL CHARACTERISTICS 1Tc - 25°C unlo.. othorwise noted)
Charactoristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
(lC
= 100 rnA,
'B
VCEO(sus)
= 0)
MJI3014
MJI3015
Collector Cutoff Current
(VCEV = Rated Value, VBE(off)
(VCEV = Rated Value, VBE(off)
= 1.5 Vde)
= 1.5 Vde, TC = 150°C)
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50
n, TC = 100°C)
350
400
-
-
-
-
-
0.5
Vde
mAde
'CEV
ICER
2.5
3.0
mAde
1.0
mAde
'1
Emitter Cutoff Current
IVES = 6.0 Vde, IC = 0)'
lEBO
SECONO BREAKDOWN
•
Second Breakdown Collector Current with base forwarq biased
Spe Figure 12
Clamped Inductive SOA with Base Reverse Biased
See Figure 13
ON CHARACTERISTICS (I)
DC Current Gam
(lC = 2.5 Ado. VCE
Collector-Emitter SaturatIon Voltage
(lC" 5Ade,IB = 1.0 Ade)
(lC" 1 0 Adc, IS = 2.0 Adc)
(lC = 5 Adc, IS = 1.0 Adc, TC
I
12
-
40
-
-
1.4
5.0
-
1.5
1.5
Vde
VCE(sa!)
-
= 100°C)
Base-Emitter Saturation Voltage
(lC" 5 Ade, IB
(lC " 5 Adc, IB
-
hFE
= 5 Vde)
VBE(s.t)
=1.0 Add
=1.0 Adc, T C = 100°C)
-
2.4
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
=0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Reslstl'lIe Load (Table 1)
= 250 Vde,lc = 5.0 A,IBI = 1.0 A,
Delay Time
IVCC
Rise Time
to
Storage Time
(VCC" 250 Vde,IC
Fall Time
VBEloffi
= 25 IJ.S,
Duty Cycle ~~ 2%)
= 5.0 A,IBI = 1.0 A,
= 5.0 Vdc, 'D = 25 "s, Duty Cycle"
2%1
,.
td
-
0.Q1
0.1
tr
-
0.OS5
0.5
Is
tf
-
O.S
2.0
us
-
0.095
0.5
~s
1.5
3.5
0.25
1.0
~s
Inductive Load Clamped (Table 1)
Storage Time
Crossover Time
IIC
Fall Time
Storage Time
= 5 A(pkl, Vel amp = 250 Vde,
=5 Vde, TC = IOOoCI
181
Isv
= 1.0 A,
te
VSE(offl
\
IIC
=5 A
= 250 Vde,
= 25 0 CI
(pk), Vel amp
Crossover Time VBE(offi = 5 Vdc, TC
IBI
= 1.0 A,
tfi
(1) Pulse Te~t: PW ::. 300 J.lS. Duty Cvcle ~ 2%.
4-498
0.12
-
0.8
-
te
-
0.12
tfi
-
0.06
tsv
Fall Time
-
-
,.
~s
~s
~s
~s
'"
MJ13014, MJ13015
DC CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
100
10
2.0
en
!:;
f--
'"~
TJ = ISOoC
~
'"
....... r-,.
~
2SoC
.......... ~
<.>
c
I"~
0
I. 6
~
VCE=S.OV
0
~
....
....
~
ri:
0.8
~
0.4
1.2
IC =0.2SA
8
1.0
~
S.O
0.1
O.S 0.1 1.0
2.0 3.0
IC. COLLECTOR CURRENT lAMP)
0.3
S.O
O.OS
2. 0
1. 6
in
-
'"
1. 2
~
w
w
'"«
1. 2
l/
oa
0.2
0.3
O.S 0.1
1.0
2.0
3.0
I-r-;'SOC
S.O 10
o
10
0.1
0.2
0.3
O.S
IC' COLLECTOR CURRENT (AMP)
FIGURE 5 - COLLECTOR CUTOFF REGION
3.0
SO 1.0
10
FIGURE 6 - CAPACITANCE
,
/
103
TJ = ISooC
10 2
12SoC
......
C,b
I
;c_~ 10 0
V
./
/
w
/
<.>
-'---- -REVERSE
300
U
~
200
~.
,
f"""'-..
~r--.
100
0
0
'VCE-2SDV=
100
10- I
-0.4
FORWARD
SO0
Z
~
100°C
ISoC
10 I
TJ = 2SoC
t-.:..
lo~ 0
I
a:
8
E
2.0
2000
/
~
0 1 1.0
IC. COLLECTOR CURRENT (AMP)
104
'"
t=;SOOC
0.4
i-- ~ i---"~
ISOoC
TJ = 2SoC
I-:
_~r::::
,,:
0
0.1
~
VeE('at)@lc/la = S
VeE(on)@VCE=3
TJ =12soc
!:;
'"
>
O. 4
~
-
«
'"
!:;
a
'"
> O.
>'
....
-
~
!:;
3
2.03.0 S.01.0Io
JJll
---
Ic/le = S
1. 6
;(
0.20.3 0.S0.11.0
FIGURE 4 - BASE·EMITTER VOL TAGE
2. 0
~
0.1
lB. eASE CURRENT (AMP)
FIGURE 3 - COLLECTOR·EMITTER
SATURATION VOLTAGE
'"
SA
I""'-
0010.02
1.0 10
2.SA
IA
\
I....
0
>
0.2
TJ = 2SoC
2SoC
-0.2
+0.2
+0.4
0
20
0.1
+0.6
VeE. BASE·EMITTER VOLTAGE IVOLTS)
0.2
O.S
1.0 2.0
S.O
10
2030 S070100 200
VR. REVERSE VOLTAGE (VOLTS)
4-499
SOOIOOO
MJ13014, MJ13015
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RBSOA AND INDUCTIVE SWITCHING
VCEO(susl
RESISTIVE SWITCHING
R'
TURN ON TIME
R2
J
2
IS1 adjusted to
obtain the forced
hFE deSired
TURN·OFF TIME
PW Varied to Attain
'C=100mA
Use inductive ,witching
driver a. the input to
ma ''''.tive tMt circuit.
~-~>---~--o -5.2
J;250 pF
All PNP - MJE210
Adjust R 1 to obtain I B 1
For switching and RBSOA' A2 = 0
For BVCEO(sus). R2 =- .
Leon = 180".H
Aeoil = 0.05
Vee" 20 V
Leol!" 80 mH Vee = 10 V
Rc:oU- O. 70
n
V clamp" 250 V
RS adjusted 10 attain de,lred IS1
OUTPUT WAVEFORMS
INDUCTIVE TEST CIRCUIT
Vee
~
250 v
RL '" 50
n
Pulse Width::; 10 III
RESISTIVE TEST CIRCUIT
1, Adjusted to
'e
I.
r±i1L
1--.,
Obtain Ie
'1 ~'.m"d
1, ... Leoll (lCpk'
Vee
"t-
12'" Lcon(lCpk'
Se. Above for
Detailed Condition.
Velamp
Vee
Tan Equipment
Scope - Tektronht
475 or Equh,.lent
FIGURE 8 - PEAK REVERSE CURRENT
FIGURE 7- INDUCTIVE SWITCHING MEASUREMENTS
8.0
le~
/"
le./
./
I- f--Isv
/
Vcl.mp _
"\
r------
I
r------ I-
90%Vclamp j '~ 90% Ie
tlVfl ~tfi- !-tti-
5.0
i-l ~'c~ l-
V
10%Vclamp
VeE
18-
t-
----
I---
---
~
r-__
I"
10%.......
IC PK -
90%181
Ie' 5A
181' I A
I--
2%le
0
-- --\- -- --- -- - !--'"""
--
1.0
1.0
TIME
4-500
5.0
2.0
VBE(olf)- BASE·EMITTER VOLTAGE (VOLTSI
8.0
MJ13014, MJ13015
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common tp SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason; the following
new terms have been defined.
tsv·· Voltage Storage Time, 90% lSI to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN·222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi = tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifica·
tions which make this a "SWITCHMODE" transistor are
the inductive switching speeds (t c and tsv) which are
guaranteed at 1000 C.
RESISTIVE SWITCHING
FIGURE 9 - TURN·ON SWITCHING TIMES
10
0.1
0.5
"-
0.2
"-..
~
~
I-
~ 25OV:=
30
IC)IS~I~t
0
VCC
0.3
."
FIGURE 10 - TURN·OFF TIME
50
TJ
VCE~250V
VSEI,"} ~ 5 V
I,
~ 25 ti C
"-
0.1
TJ ~ 25'C
IC/ls ~ 5
10
~
I,
";::::
-' 0.01
0.05
o. I
o5
03
...........
0.2
0.03
""
0.02
0.01
0.2
0.1
0.3
0.5 0 I
"'-
...........
2.0
1.0
"'-
1
00 I
0.0 5
Id
30
50 10
nt
10
02
03
IC. COLLECTOR CURRENT (AMP}
It
5.0 10
0 5 0 I 1.0
2.0
30
IC. COLLECTOR CURRENT (AMP}
10
FIGURE 11 - THERMAL RESPONSE
I
5
3 : = 01
2
-
-
01
-
RI/JeW '" rlt) RIIJC
RoJC(t) " 1 l' l1C W MM
--
I--'
o CURVES APPLY fOR POWER
PULSE TRAIN SHOWN
REAO TIME Alii
f.-- -"..
1=.005
,
0.02
-
0.0 1
001
;,..001
~J(pkl, - T~ ~ ~h}k) RIIJC(t)
-I
II
I--- I
1---~2 - I
SINGLE PULSE
I II
002 003
I
pHUl
51=.002
__
.-k::
-t-t-
-
I =0 ~ 05
DUTY CYCLE, 0
005
01
02
03
10
0.5
1.
TIME !msl
4-501
20
30
50
100
200
~
11/12
300
500
1000
MJ13014, MJ13015
SAFE OPERATING AREA INFORMATION
tlie Safe Operating Area figures shown in Figures 12 and 13.,.
specified for thasa devices under the test conditions shown.
20
ie
'"
....
~
ill
a:
•
~
8
~
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
10 $IS
100",-
10
1.0 ms
5.0
m,
5.0
TC : 25°C t - -
2.0
a:
=>
u 1.0
a:
0
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; Le., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25 0 C; TJ(pk)
is variable depending on power level. Second breakdown
plJlse limits are valid for duty cycles to 10% but must be
derated when TC;;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12'may be found
at any case temperature by using the appropriate curve
on Figure 14.
.
TJ(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
Iimitations imposed by second breakdown.
"'-
I'\.
dt I'\.
Eo':"-....:, ~~~~~~GL ~\~~TLlMIT
(SINGLE PULSE)
---SECOND BREAKDOWN LIMIT
0.5
'\.
0.2
"'
0.1
0.05
"
MJ13014~
0.02
. 4.0
-=
6.0
10
40
20
60
100
MJI3015
200
350
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
400
FIGURE 13 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA
10
~
~8
1\\\
r-
~
\\\ _VSE(off): 5 V
\ ~ 2V
\l)..) ~OV
."
'" "1""'-
4.0
'1\ "
'"
~
20
~
~
REVERSE BIAS
For inductive loads, high. voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping, RC, snubbing, load line
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and represents the
voltage·current conditions during reverse biased turn·off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure
13 gives RBSOA characteristics.
It.
TURN OFF LOAD LINE
SOt- BOUNDARY FOR MJI3015
THE LOCUS FOR MJI3014
IS 50 V LESS
~ 6.0 t- IC/ISI> 5
a:
0
I - TJ" lOOoC
~
....
0
0
100
200
300
400
500
VCE' COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 14 - POWER DERATING
100
0
0
~ t-....
l'--
1"""'"THERMA~
.........
DERATING
0
SECO~~~~i~~OWN _
r-......
.............
'"
...............
...............
:--.,.
"
0
0
40.
So
120
TC. CASE TEMPERATURE (oC)
4-502
"
160
'"
~
200
MJ13330
MJ13331
Designers·Data Sheet
20 AMPERE
NPN SILICON
POWER TRANSISTORS
SWITCHMODE· SERIES
NPN SILICON POWER TRANSISTORS
200 and 250 VOLTS
175 WATTS
The MJ13330 and MJ13331 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is criticaL They are particularly suited for line operated
switchmode applications such as:
•
Switching Regulators
•
•
Inverters
Solenoid and Relay Drivers
•
Motor Controls
•
Deflection Circuits
Designer's Data for
"Worst Case" Conditions
The Designers· Data Sheet per·
mits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.
Fast Turn-Off Time
75 ns Inductive Fall Ti~e-250C (Typ)
150 ns Inductive Crossover Time-25 0 C (Typ)
900 ns Inductive Storage Time-250 C (Typ)
Operating Temperature Range -65 to +200 0 C
1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Ln='::J~
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak 11)
Sase Current - Continuous
-Peak
(1)
Total Power Dissipation
@
MJ13330
200
400
Symbol
VCEOlsusl
VCEV
VEB
IC
ICM
'B
IBM
T C = 2SoC
MJ13331
250
450
I
I
6
20
30
10
20
175
100
Po
@TC = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
I
TJ,Tstg
Unit
Characteristic
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
I
PLANE
Vdc
Vdc
Vdc
Adc
Adc
PIN I BASE
Watts
1
W/oC
-65 to +200
°c
2 EMITTER
CASE COLLECTOR
MILLIMETERS
INCHES
DIM MIN MAX
MIN
MAX
A
B
C
THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case
r~K
ESEATlN!~
Symbol
A8JC
TL
Ma.
1
275
Unit
°C/W
°c
0
E
F
G
H
j
K
Q
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.
R
• Trademark of Motorola Inc.
Similar device types with higher VCEO ratings are: MJ13332 (350 VI thru MJ13335 (500 V).
4-503
-
39.37
2108
762 0250
1.09 0039
J43
2990
30'0 1.177
1067
11.18 0.420
533
5.59 0.210
17.15 0.655
16.6'
11.18 1219
0.440
409 0151
38'
26.67
Coileeioreonnec:lidtocile
CASE 11-01
TO·3
-
635
099
1550
0.830
0300
00'3
0.135
1197
0.440
0.220
0675
0.'80
0161
1.050
•
MJ13330, MJ13331
I
,
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.)
Symbol
Characteristic
Peak Forward Blocking Voltage
(RGK = 1000 Ohms)
25
50
100
200
300
400
500
600
-
-
-
-
-
-
IORM
-
-
500
"A
IRRM
-
-
500
"A
VTM
-
-
1.75
Volt
IGT
-
-
1.0
mAde
VGT
-
-
1.0
0.1
-
-
-
-
5.0
-
0.8
0.6
-
-
10
-
= 1000 Ohms, TJ = 110°C)
Peak On·State Voltage (Pulsed, 1.0 ms max, Duty Cycle ~ 1.0%)
(IF
-
= 110°C)
Peak Reverse Blocking Current
(Rated VRRM, RGK
Unit
Volt
MCR1906·1
MCRl906·2
MCRl906·3
MCR19064
MCR1906·5
MCR1906-6
MCR1906·7
MCR1906-8
Peak Forward Blocking Current
(Rated VORM, RGK = 1000 Ohms, TJ
Max
Typ
Min
VORM
= 1.0 Adc peak)
Gate Trigger Current (Continuous del
(VAK = 7.0 V, RL = 100 ohms)
Volt
Gate Trigger Voltage (Continuous de)
(VAK = 7.0 V, RL = 100 ohms)
(V AK = Rated VORM, RL = 100 ohms. RGK
= 1000 Ohms.
= 110°C)
TJ
Holding Current
IVAK = 7.0 V. RGK
IH
rnA
= 1000 ohms)
Turn-On Time
(lGT = 10 rnA, IF = 1.0 A)
II GT = 20 rnA, IF = 1.0 A)
tst
Turn-Off Time
(IF = 1.0 A, IR
tq
"s
"s
= 1.0 A. dv/dt = 20 V/"s. T J = 110°C)
CURRENT DERATING
FIGURE 1 - CASE TEMPERATURE REFERENCE
110
100
~~
I\~ ~,
w
~
90
~ "
=e.
~ ~
Q"
~
0.6
5a; 90
'" G
:(\
\ '\\ ~ ~
80
o~ 0=>
'";('
""
1.2
1.4
~
X
"
"
0.01
10
FIGURE 3 - COLLECTOR·EMITTER SATURATION REGION
0
6
1.1
Ii
II
l::
~
'"
~
~
O. B
S
~
>
15 aC
o
01
150 aC
0.5
10
"
1
8
::i
10
~
I-- I-
o
05
0.1
FIGURE 5 - COLLECTOR CUTOFF REGION
/
~
13
'"'"
~
S
~
l-
.....
/
/
r-- I-- REVERSE
u
z
10
Cot~
u
;t
100
;:\
<.S
FORWARD
100
/ VCE -150 V=
lS aC
-0.1
10
500
t:::
50
10- 1
-0.4
1.0
1.0
5.0
IC. COLLECTOR CURRENT lAMP)
«
L
/.
75 aC
100
~
1000
100 aC
10 1
./
~ 700
V
12S aC
101
-
V 1/
I
i'::l
C,b
1000
/
/
r-- t--Tr IS0 aC
t-
10
FIGURE 6 - CAPACITANCE
3000
.3 10 3
- --
150°C
>
104
:;;
5.0
ICIIB·5
-f.-:::::::
1.0
1.0
50
IC. COLLECTOR CURRENT (AMP)
20
6
'/
0.4
0.1
0.2
0.5
1.0
lB. BASE CURRENT (AMP)
FIGURE 4 - BASE·EMITTER VOLTAGE
I
':;
'"~
005
0
J
IC/IB·5
«
'"
001
+0.2
+0.4
30
01
+0.6
VBE. BASE·EMI.TTER VOLTAGE (VOLTS)
4-505
0.5
1.0
50 10
50 100
VR. REVERSE VOLTAGE (VOLTS)
500 1000
MJ13330, MJ13331
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following.
new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 t.o 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the. predominant switching
power losses .occur during the crossover interval and
can be obtained using the standard equation from AN·222:
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC!,!S-....
,,- I-"""
/
90%
I--
'4.
Vc'ampA 1\ 90% IC
I- I-Isv
IC"""""
Vclamp _
1'\
I
Iry
If! ~I"- t-Ili-
1---. !-Ic-\ l -
V
VCE
10%V clamp
I'
I B - i - 90%IBI
10% .......
ICPK-
r-;~
- --\- -- -- -- -- -
-
~
""""
TIME
FIGURE 8 - REVERSE BASE CURRENT v...us
VBE(off) WITH NO EXTERNAL BASE RESISTANCE
0
./"
I}
....V
I--
V
'"
2.
°v
IC ~ IDA
IBI ~ 2 A
/
PSWT = 1/2 \lCCICltc)f
In general, trv + tfi "" tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 250 C and has become a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifica'
tions which make this a "SWITCHMODE" transistor are
the inductive switching speeds Itc and t sv ) which are
guaranteed at lOOoC.
!
- t---
Vcl amp = 250 V_
TJ ~ 25°C
./
V
N
V
t--
2.0
5.0
VBElofli' REVERSE BASE VOLTAGE IVOLTS)
10
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN·ON SWITCHING TIMES
FIGURE 10 - TURN·OFF SWITCHING TIMES
2. 0
r-
.0
1. 0
..
IS
,...
.0
Ir~
O. 5
VCC~250V
l'
]
,.;::
w
o. 21"--..
o. 1
......
IC/ls ~ 5
....
0.0 5
........
V
r---
""'"
VCE
~
II
250 V
' - - IcllB ~ 5
;:;;;
.2'--- VBE(otl) ~ 5 V
Id
0.5
~
0
.5
..... r-....
........
0.02
0.2
IZ=
.1
........
1.0
2.0
5.0
IC' COLLECTOR CURRENT (AMP)
10
20
0.0 5
4-506
0.2
0.5
5.0
2.0
1.0
IC. COLLECTOR CURRENT (AMP)
10
20
MJ13330, MJ13331
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RBSOA AND INDUCTIVE SWITCHING
VCEO(sus)
RESISTIVE SWITCHING
,-,-----------~--~------_1~-o+15
Rl
47{1
TURN ON TIME
""0V>~Ol
20
en
•
oJL
Z
1-0
:;)-
.. !:
'81 adjusted fO
-Z
hFE desIred
ZO
obtain the forced
o
50
U
n
TURN OFF TIME
Use inductIve SWitching
PW Vaned to Attain
Ie = 100 rnA
dover ilS the ,nput to
Ihe reslstllo/. test Circuit
All Diodes - lN4934
All NPN - MJE200
All PNP - MJE210
~----~----~~
.. 52
:j; 250 ~F
Adjust Rl to obtain ISl
For SWitching and RBSOA, R2 = 0
For BVCEO(sus). A2 = "'"
Leoll = 80 mH
Vee
L eol' '" 180,uH
= ,0 V
Reoll
Aeoll = 0 7 n
~
005
Vcc'" 17SV
.R L =175
Pulse Width'" 25115
n
Vee'" 20 V
OUTPUT WAVEFORMS
INDUCTIVE TEST CIRCUIT
t,
RESISTIVE TEST CIRCUIT
Adjusted to
Obtain
Ie
.~
LCOIIIICpk)
5
------vee--
u
t 1 =0
U
12 "" LCOllllCpk J
0:
Iiiw
Vcl amp
I-
Test EqUipment
Scope -
TektronIx
475 or Equ;valent
FIGURE 11 - THERMAL RESPONSE
0
)
5
o • 05
- --tSlJL
~
3
i-'
02
?
01
«
~
"
00 )~ 005
00 5
~ 002
:: 003
~ 0.02 I..-:
in
.......,
z
...~
~
0.0 1 ........
001
002
PI,k)
~
1
-r~~
V
i
lSljGi E
005
o CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT Ii
TJ(,k) - Te' pi,k) ZOJCIt)
DUTY CYCLE, [] '" 111t2
r~LIlI
0.1
ZOJCIt)-: r(l) RUJC
ROJC = l o CIW Max
I Illl
01
05
10
10
50
t. TIME (ms)
4-507
10
I I
10
I I IIIIII
50
100
I I
200
J I I III
500
10k
MJ13330, MJ13331
SAFE OPERATING AREA INFORMATION
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
,.
5.
10 0
50
10
I-
~
5.
-
2. 0
~
-
0
0
-
1. 0
~ ::
5
-
-
- -
FORWARD BIAS
There are two limItations on the power handlIng abIlity
of a transistor: average junctIon temperature and second
breakdown. Safe operatIng area curves indicate IC-VCE
l,m,ts of the tranSIstor that must be observed for reliable
operatIon; i.e., the transistor must not be subjected to
greater diSSIpatIon than the curves ,nd,cate.
The data ot F,gure 12 IS based on TC = 250 C; TJ(pkl
IS va"abl~ depending on power level. Second breakdown
pulse lImits are valId tor duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown l,mitations
do not derate the same as thermal lImitations. Allowable
current at the voltages shown on Figure 12 may be found
al any case temperature by usong the approproate curve on
F,gure 14.
TJ(pkl may be calculated from the data In Figure 11.
100p,=
1.0ms-
~t:=
Bonding Wire limit
Thermally Limited (Single Pulse)
Second Breakdown limit
2
IOms
~ ~~
= 25 0 [:
Te
8 o. I
..9 0.0 5
0.0 2
0.0 1
3.0
MJ13330~
MJ13331=
5.0
10
20
50
~f"
200
100
300
VCE. COLlECTOR·EMITTER VOLTAGE (VOlTS(
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
FIGURE 13 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA
lImItatIons Imposed by second breakdown.
0
REVERSE BIAS
MJ13331 Limits Shown
j\
IC/IS;' 5
r-TC';; 100°C
1\
S
1\ \
VSE(olli
0
MJ13330 Limit 50 V Less
\\
\'
2
4
For inductive loads, high voltage and high current must
be sustained simultaneously during turn·off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector cur·
rent. This can be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage·current
condition allowable" during reverse biased turn·off. This
rating is ver ified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the complete R BSOA characteristics.
II
6
VSE(ofl(
=5 V
=2 V \
\
""
100
200
300
400
VCE. COllECTOR·EMITTER VOLTAGE (VOlTS(
500
FIGURE 14 - POWER DERATING
100
~ t-.....
"" _""'-.
0
~ ......
THERMAL
DERATING
0
~
SEcokEAKDDWN
DERATING-
l'-..
f""-..
1'-
......
J'-..
...............
l'.
0
"'
0
o
o
40
120
. 80
TC. CASE TEMPERATURE (OC(
4-508
160
........
:".200
MJll332 M]1333Jt
1.1113333 M]1t3335
20 AMPERE
NPN SILICON
POWER TRANSISTORS
SWITCHMODE.I>. SERIES
NPN SILICON POWER TRANSISTORS
350-500 VOLTS
175 WATTS
The MJ13332 through MJ13335 transistors are designed for
high-voltage, high-speed, power switching in inductive circuits where
fall time is critical. They are particularly suited tor line operated
switch mode applications such as:
Designer's Data for
"Worst Case" Conditions
o Switching Regulators
o Inverters
The Designers'" Data Sheet permits the design ot most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.
o Solenoid and Relay Drivers
o Motor Controls
o Deflection Circuits
Fast Turn-Off Times
200 ns Inductive Fa" Time-25°C (Typ)
1.811S Inductive Storage Time-25°C (Typ)
Operating Temperature Range -65 to +200 0 C
lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Lr~~H
r~-K
MAXIMUM RATINGS
N
M
M
M
M
M
~
~
-.,
Symbol
:;::
~
-.,
VCEOlsusl
350
400
VCEV
650
700
~
Rating
Coliector~Emitter
Voltage
Collector·Emitter Voltage
M
M
"
M
:;::
:;
Unit
450
500
Vdc
750
800
Vdc
LO
M
~
-.,
'SEATlN(-L
PLANF
Emitter Base Voltage
VES
6.0
Vdc
Collector Current - Continuous
Ie
leM
20
30
Adc
IS
ISM
10
15
Adc
PD
175
100
1.0
Watts
wloe
DIM
MIN
MAX
MIN
MAX
-65 to +200
°e
•
-
3937
2108
-
1550
0830
0300
0043
Peak 111
Base Current - Continuous
Peak 111
Total Power DIssipation @TC = 25°C
@Te= 1000 e
Derate above 25°C
Operating and Storage Junction
TJ, T stg
THERMAL CHARACTERISTICS
Max
Unit
ROJC
1.0
°e/w
TL
275
°e
Symbol
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(11 Pulse Test: Pulse Width:. 5 ms, Duty Cycle
or;;;;
MILLIMETERS
8
Temperature Range
Characteristic
PIN 1 BASE
2 EMITTER
CASE COLLECTOR
10%.
Similar device types available with lower VCEO ratings, see the MJ13330 (200 VI and
63,
C
D 099
E
F '990
G 1067
H
533
16'
109
3'3
30.'0
l11B
ATrademark of Motorola Inc.
4-509
0039
1 171
0420
K 1118
38'
1219
Q
'09
0151
R
2667
1664
1115
ColieclOlconllrtltdtllCISe
CASE 11·01
TO-3
MJ13331 1250 VI.
0250
0210
0655
0440
J
S 59
INCHES
0135
1197
0440
0220
oS75
0'80
0161
1.050
!
MJ13332, MJ13333, MJ13334, MJ13335
ELECTRICAL CHARACTERISTICS ITC
=25°C unless otherwise noted).
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 11
IIc = 100 rnA, IS = 0)
Collector Cutoff Current
IVCEV
IVCEV
200
250
-
-
-
-
0.25
5
mAde
ICEV
= Rated Value, VSEloff) =1.5 Vde)
= Rated Value, VSEloff) = 1.5 Vde, TC = 1500 C)
Collector Cutoff Current
ICER
IVCE = Rated VCEV, RSE
Emitter Cutoff Current
IVES = 6 Vde, IC =0)
Vde
VCEOlsus)
MJ13330
MJ13331
5
mAde
0.5
mAde
= 50 n, TC = 100o C)
IESO
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
See Figure 12
Clamped Inductive SOA with base reverse biased
See Figure 13
ON CHARACTERISTICS 11)
DC Current Gain
IIc
IIc
-
hFE
= 5 Ade, VCE = 5 Vde)
= 10 Adc, VCE = 5 Vdc)
Collector-Emitter Saturation Voltage
IIc = 10 Adc, IS = 1.5 Adc)
IIC = 20 Ade, IS = 5 Adc)
IIc = 10 Ade, IS = 1.8 Ade, Tc = 1000 C)
VCElsat)
Base-Emitter Saturation Voltage
IIc = 10 Ade, IS = 1.5 Ade)
IIC = 10 Ade, IB = 1.8 Ade, Tc
VSElsatl
15
8.0
-
-
75
40
-
-
1.5
3.5
2.5
-
-
Vde
Vde
-
-
1.8
1.8
fT
5
-
40
MHz
Cob
100
-
400
pF
td
-
0.08
0.20
~s
0.55
1.0
~s
0.70
3.5
~s
0.11
0.7
~s
1.35
4.5
~s
0.45
1.8
= 1000 C)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
IIC· 300 mAde, VCE
Output Capacitance
IVCS = 10 Vde, IE
= 10 Vde, f test = 1 MHz)
=0, f test = 100 kHz)
SWITCHING CHARACTERSITICS
Resistive Load (Table 1)
Delay Time'
= 175 Vde,
Rise Time
IVCC
Storage Time
VSEloff)
IC
= 10 A,
lSI· 1.5 Ade,
= 5 Vde, tp· 50 ~s,
tr
Duty Cycle.; 2%)
Fall Time
ts
tf
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
= 10 Alpk), Vel amp = 200 Vde,
= 5 Vde, TC = lOOoC)
IIC = 10 Alpk), Vel amp = 200 Vde,
VSEloff) = 5 Vde, TC = 25 0 C)
IIC
IBI
= 1.8 Ade,
VSEloff)
tsv
tc
lSI
= 1.5 Adc,
-
0.90
tsv
0.15
te
Fall Time
tfi
III Pulse Test: PW • 300 ~s, DulY Cycle'; 2%.
4-510
-
0.075
~s
~s
~s
-
~s
MJ13332, MJ13333, MJ13334, MJ13335
DC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
10 0
-
0
i-TJ-25'C
0
~
5V
~
IC
1.4
~
a::
~
2.0
1.0
g o.
~
5.0
10
20
tl
>
\
6
0.2
0.2
\
1\
0.5
03
2.4
0.7
-IC/I S·5
'rf-
~
4 :::TJ
"I
25°C
I
2.0
5.0
1.0
IC. COLLECTOR CURRENT (AMP)
0.5
10
~
1 I
~
~
=
=
5.0
10
20
FIGURE 6 - OUTPUT CAPACITANCE
/
0
".........
TJ -150'C
10 2
I
125°C
'"
~
2.0
IC. COLLECTOR CURRENT (AMP)
60 0
=VCE~250V
>-
1.0
0.5
02
FIGURE 5 - COLLECTOR CUTOFF REGION
10 3
.-t;::
150'C
o
20
104
~
-i.----
/
TJ
i--
0.2
20
W
2
/
O.B
o
10
5.0
~
B _TJ ~ 25'C
~>
>
3.0
VBElsat)@ ICIIB ~ 5
~~1.2
'-'0
~ 0.4
2.0
6
I
U;J~
S
1.0
FIGURE 4 - BASE-EMITTER VOL TAGE
Tj~ 150,bf
::>
>~_20
t:::::> 1.6
,,-
'-
0
II
II
"'~
w!:;
>-0
\
lB. BASE CURRENT (AMP)
FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOL TAGE
~
!\
20 A
t--
IC. COLLECTOR CURRENT (AMP)
28
\
~
1\
\
o
8
1.0
15 A IC
18
>
.~
0
0.5
~
10 A IC
~
>-
5.0
0.2
~
o
0
~
II
25'C
IC· 5 A
2:
" ~~
0
~
TJ
!:;
o
"-
VCE
2.2
en
t=TJ.150'C
IOO'C
10 1
0
./
........
/
75°C
8
10 01*==
I
FREVERSE
0
FORWARD
1= ~25'C
10- 1
-04
-0.2
""
C,b
60
+0.2
+0.4
0.4
+06
10
2.0
5.0
10
20
50
VR. REVERSE VOLTAGE (VOLTS)
VBE. BASE-EMITTER VOLTAGE (VOLTS)
4-511
100
~~
200
400
MJ13332, MJ13333, MJ13334, MJ13335
SWITCHING TIMES NOTE
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
.,....,
."..-
1
V
1,\
In res'stlve switching circuits. rise, fall, and storage
times have been defined and apply to both cur~ent and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and- hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
t sv = Voltage Storage Time, 90% IS1 to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vclamp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
te = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer,. there is minim~1 switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN·222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ". tc' However, at lower test currents
this relationship may not be valid.
As is common with, most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark f9r designers. However, for designers of high
frequency converter circuits, the user oriented specifica·
tions which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and tsv) which are
guaranteed at 1000 C.
•
~".mp_
t--
1\
'rv ffll-Jt 'f, -1-',,~ 1-"--\ f-
90%V ctam PA 90% IC
./
'C ............
'~
I- t--'sv
1,\
/
VCE
10%'
IC pK -
10% Vcl amp
r- 90% lSI
-- --\-
'S-
--- -
t-f2%IC
-
-
!--
~
TIME
FIGURE 8 - REVERSE BASE CURRENT
versus BASE EMITTER VOL TAGE
S.O
Vclamp " 200 V
I-IS1·1.5A
'C·1O A
0l---Tr 25 OC
~
2.0
..,....... V
V
V
!-'"
V
V
V
o
o
1.0
2.0
3.0
4.0
5.0
VSEloff). SASE·EMITTER VOLTAGE IVOLTS!
RESISTIVE SWITCHING
FIGURE 9 - TURN·ON TIME
FIGURE 10 - TURN-OFF TIME
1. 0
.0
o. 5
o. 5
"
3
~
;:::
VV
o. 2
0.1 0
0.0 5
1.0
-~
2.0
" V
V
V
3 o. 3
vSEloff!· 5 V
VCC·175V
IcIIS·5
TJ·250C
-'
t--
o. 1
~~
5.0
10
.......
'f
;!... o. 2
I--
20
IC. COLLECTOR CURRENT lAMP!
0.0 5
1.0
l'-b
r-
VSEloff} ·5 v
vCC· 175 v
IcIIS·5
Tr 25°C
2.0
3.0
5.0
IC. COLLECTOR CURRENT lAMP!
4-512
10
V
.1.
20
MJ13332, MJ13333, MJ13334, MJ13335
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RBSOA AND INDUCTIVE SWITCHING
VCEO(sus)
RESISTIVE SWITCHING
r-.-----------~--~------~~-O+1S
R1
47n
TURN ON TIME
(/l
Z
1-0
::1-
... !::
181 adjusted to
obU",n the forced
ZQ
-z
hFE de5ued
o
so n
u
TURN OFF TIME
PW Varied to An81n
Ie'" loa mA
Use ,nductiVe sWitching
driver as the rnput to
the resistIVe test Circuit
All Diodes - lN4934
All NPN - MJE200
All PNP - MJE210
.-------4------+---0 _ S. 2
J
250 "F
Adjust Rl to obtain IS1
For switchmg and ABSOA' R2 =
For BVCEO{sus). R2
L.eOII = 80 mJ-l
Vee
=
a
00
L eol' ~ lBO j.lH
Rcorl = 0 05 n
Vee'" 20 V
= 10 V
Reoil = a 7 n
Vee
250 V
AL - 50 12
V clamp = 250 V
RS adlusted to attain dfi!Slred ISl
Pulse Width
OUTPUT WAVEFORMS
INDUCTIVE TEST CIRCUIT
= 10 j.l.S
RESISTIVE TEST CIRCUIT
t,
Adjusted to
Obtain Ie
~
t, ""
:;
U
LCOII(ICpkl
Vee
'"
u
Iiiw
t2 "" LCOII{ICpkl
VCEtvc~
...
Vclamp
~mp
Test Equrpment
1-,,-1
Scope - Tektronix
475 or Equivalent
FIGURE 11- THERMAL RESPONSE
1
""
~
_
07
05
oil I
r-O' 0 5
--
~O
xw
I- N
~:;
Z""
""Z
UJ:E
Vi'"
03
0.2
ZO
",-
1== 0.2
t--
-
-
01
g;
005
~~
0.02
-
t--
00 1
001
I--
~
0 CURVES APPL Y fOR POWE R
PULSE TRAIN SHOWN
REAO TIME AI 'I
,
-~
'1==.005
~.~ 0.0 7~002
~ ~ 0.03
ROJC(t) ~ rW ROJC
RI/Jetl) 117 0C WMo.I)(
-I
,~Jlpkl
~
~
TC ~ Plpkl R,'JCllI
~:.:L...c...
PlfrLfl
...K
001
tf-I
SINGLE PULSE
11'-
I II
002 003
DUTY CYCLE., 0:: 11/12
005
01
02
03
10
-05
t. TIME (msJ
4-513
20
30
50
100
200
300
500
~
IUOO
MJ13332, MJ13333, MJ13334, MJ13335
SAFE OPERATING AREA INFORMATION
FIGURE 12 - FORWARO BIAS SAFE OPERATING AREA
0::
'>--"
~
:'>
10/-ls
10
10
5
lOOps
1m'
8
~
~
8
01
01
0.05
Bonding WlTe Limit
Thermal llmlt@Tc :: 25°C
(Sinqle Pulse)
~
30.02
•
001
0005
FORWARD BIAS
There are two limitations on the power handling ability
of a tranSistor: average junction temperature and second
breakdown. Safe operating area curves Indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; I.e., the transistor must not be subjected to
greater disSipation than the curves Ind;"ate.
The data of Figure 12 IS based on TC = 250 C; TJ(pk)
IS va"able depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at [he vol [ages shown on Figure 12 may be found
a[ any case temperature by uSing the approp"ate curve on
Figure 14.
TJ(pk) may be calculated from the data In Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Second Breakdown limit
6
10
I:
==
de
MJI3331
MJI3333
MJI3334
MJ13335
50
100
100
10
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
350450600
400500
FIGURE 13 - RBSOA, REVERSE BIAS SWITCHING
SAFE OPERATING AREA
0
K!
~
>--
REVERSE BIAS
~
6
1\\
/'
1\ iG V
ill
a:
~
2
\
a:
c
fiij
S
'"
."
~
8.01-- I-IC/ISI" 5
VSElof!) ~ 5 V
I-- I- TJ ~ loooe
4. 0
0
i
100
I
I
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, R C snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the complete R BSOA characteristics.
MJI3335
MJI3334
Mjl333j
MJ13332
~
\1\.' l\.
I\, ,,'\ l'.
",'\. f'..
\ l~ !'\b-,
300
400
500
600
200
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE 14 - POWER DERATING
10 0
~~
'"
0
0
['..,
I'"
Forward Bias
......
t--.
Therma~
Derating ---
Second Breakdown -
,-
Deratmg
~
~
...... 1"-.
i'
r-.....
0
......
0
~
0
40
120
80
TC. CASE TEMPERATURE IOC)
4-514
160
~
200
PNP
NPN
1]14000 1]14001
MJ 14002 1.1140'03
1
70 AMPERES
HIGH-CURRENT COMPLEMENTARY
SILICON POWER TRANSISTORS
COMPLEMENTARY SILICON
POWER TRANSISTORS
... designed for use in high-power amplifier and switching circuit
applications .
60-80 VOLTS
300 WATTS
.. High Current Capability - IC Continuous = 70 Amperes
•
o DC Current Gain - hFE = 15-100 @ IC = 50 Adc
o Low Coliector·Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @.IC = 50 Adc
MA"XIMUM RATINGS
Symbol
MJ14000
MJ14001
MJ14002
MJ14003
Unit·
Collector-Emitter Voltage
VCEO
'60
80
Vdc
Collector-Base Voltage
EmItter-Base Voltage
VC80
60
80
Rating
Collector Current Continuous
Base Current - Contil1uous
Emitter Current - Contmuous
Total Power Dissipation @TC - 2SoC
Derate above 2SoC
Operating and Storage Junction
Temperature Range
Vdc
VEBO
5
Vdc
IC
70
Adc
IB
15
Adc
IE
85
Adc
Po
300
1.7
Watts
W/oC
TJ. T stg
-65 to +200
°c
~
~JJ
LI
,5.G
f'.
1
0
PLANE
J-
THERMAL CHARACTERISTICS
I
Characteristic
Thermal Resistance, Junction to Case
Symbol
I
ROJC
Max
Unit
0.584
°C/W
o
H
STYLE I,
PIN I. BASE
2. EMITTER
CASE. COLLECTOR
FIGURE 1 - DC CURRENT GAIN
500
-
30 0
200
"~
100
, MILLIMETERS
OIM MIN
MAX
.........
I-
~ 70
_
50
~
30
.t
OJ
20
10
5
0.7
_
_
VeE=5V
TJ=25 0 e
-I 1
A
B
C
38.35
19.30
6.35
0
E
F
INCHES·
MIN
MAX
39.37
21.08
1.62
1.510
0.160
0.250
1.45
I.SO
0.057
29.90
3.43
30.40
11.18
-
10.67
G
H
J
K
5.21
16.64
0
R
3.84
24.89
11.18
5.12
11.15
12.19
4.09
26.67
-
1.171
0.420
0.205
.55 O.
0.440 0.480
0.151 0.161
0.980 '1.0511
CASE 19H11
MODIFIED TO·3
10
20
30
50
70
Ie. COLLECTOR CURRENT (AMP)
This is advance information and specifications are subject to change without notice.
4-515
1.550
0.830
0.300
0.063
0.135
.191
0.440
0.225
MJ14000. MJ14002 NPN
MJ14001 • MJ14003 PNP
ELECTRICAL CHARACTERISTICS
(TC
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
-
-
-
1.0
1.0
-
-
1.0
1.0
-
1.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
IIC = 200 mAde, IB = 0)
Collector Cutoff Current
(VCE = 30 Vde, 'B = 0)
(VCE = 40 Vde, 'B = 0)
MJ14000, MJ14001
MJ14002, MJ14003
•
rnA
'CEX
= 60 Vde, VBE(off) = 1.5 V)
= 80 Vde, VBE(off) = 1.5 V)
MJ14000, MJ14001
MJ14002, MJ14003
Collector Cutoff Current
(Vce
(Vce
mA
ICEO
Collector Cutoff Current
(VCE
(VCE
Vde
VCEO(sus)
MJ14000, MJ14001
MJ14002, MJ14003
mA
'CBO
= 60 Vde, 'E = 0)
= 80 Vde, 'E =0)
MJ14000, MJ14001
MJ14002, MJ14003
-
Emitter Cutoff Current
(VBE = 5 Vde, IC = 0)
'EBO
1.0
-
1.0
30
15
5
-
mA
ON CHARACTERISTICS
DC Current Gain
IIc = 25 Ade,
(lc = 50 Ade,
(lc = 70 Ade,
(1)
VCE = 3 V)
VCE = 3 V)
VCE = 3 V)
hFE
Collector-Emitter Saturation Voltage (1)
Vde
1
2.5
'3
-
2
3
4
Vdc
VBE(sat)
(lc = 25 Adc, 'B = 2.5 Adc)
(lc = 50 Adc, IB = 5 Adc)
(lc = 70 Adc, 'B = 14 Adc)
-
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB
= 10 Vdc,
'E
= 0, f = 0.1
MHz)
Pulse Test: Pulse Width = 300l's, Duty Cycle'; 2%.
FIGURE 2 - DC SAFE OPERATING AREA
70
50
~ 30
;
~
i3
20
-'---
10
'"
~
-
-
-
Base-Emitter Saturation Voltage 11)
(1)
100
VCE(sat)
(lC = 25 Ade, Ie = 2.5 Ade)
(lc = 50 Ade, 'B = 5 Ade)
(lc = 70 Ade, Ie = 14 Ade)
TC
=
"-
250 C
Bonding Wire limn
Thermal limit
Second Breakdown Limit
"-
1' ....
de
5
1\
8
~
MJ14000, 14001
MJ14002,14003
0.7
1
10
20
VCE, COLLECTOR·EMITTER (VOLTS)
4-516
30
-
50
70 100
NPM
IJ15001
PHP
IJ15002
15 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
POWER TRANSISTORS
COMPLEMENTARY SILICON
The MJ15001 and MJ15002 are EPIBASE'" power transistors
designed for high power audio, disk head positioners and other
linear applications.
140 VOLTS
200 WATTS
«I
High Safe Operating Area (100% Tested) 200W@40V
50W@100V
•
o For Low Distortion Complementary Designs
o High DC Current Gain hFE = 25 (Min) @ IC = 4 Adc
Lr~
'~K
ESEATIN(~
I
PLANE
MAXIMUM RATINGS
Rating
Coliector·Emitter Voltage
Collector· Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current - Continuous
Emitter Current Continuous
Total Power Dissipation@TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO(sus)
VCBO
VEBO
IC
IB
IE
Po
Value
140
140
5
15
TJ,Tstg
5
20
200
1.14
-65 to +200
Svmbol
Max
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
WloC
PIN 1. 8ASE
2. EMITIER
CASE: COLLECTOR
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
AOJC
TL
0.875
265
Purposes: 1116" from Case for <;10s.
Unit
°cm
°c
DIM
A
8
C
a
MILLIMETERS
MIN MAX
-
6.35
0.99
-
E
F 29.90
G 10.67
H 5.33
J 16.64
K 11.18
Q
R
3.84
39.37
21.08
7.62
1.09
3.43
:11.40
11.18
5.59
17.15
12.19
4.09
26.67
INCHES
MIN
MAX
0.250
0.039
-
1.177
0.420
0.210
0.655
0.440
0.151
-
Collector connetted to c_.
CASE 11·01
TO-3
~r8demark. of Motorola Inc.
4-517
1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
n.m
0.161
1.050
MJ15001 NPN
MJ15002PNP
l:LECTRICAL CHARACTERISTICS (TC = 250 C unle•• otherwise noted.1
I
I
Characteristic
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (11
(lr. = 200 mAde. IR = 0)
Collector Cutoff Current
(VCE e 140 Vde, VBE(off) ,;. 1.5 Vdel
(VCE = 140 Vde, V8E(off/ -1.5 Vdc, TC a lS00 CI
Collector Cutoff Current
(VCE = 140 Vde, IB = 01
Emitter Cutoff Current
(VEB = 5 Vde, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vde, t = 1 s (non·repetitivell
(VCE = 100 Vde, t = l,s (non·repetitivel
ON CHARACTERISTICS
•
DC Current Gain
(lC = 4 Ade, VCE = 2 Vde)
Collector-Emitter Saturation Voltage
IIC = 4 Ade, 18'" 0.4 Adel
Base-Emitter On Voltage
(lC = 4 Adc, VCE = 2 Vdcl
DYNAMIC CHARACTERISTICS
Min
MIX
Unit
VCEO(susl
140
-
Vde
ICEX
"Ade
mAde
"Ade
ICEO
-
100
2
250
lEBO
-
100
"Ade
hFE
25
150
-
1
Vde
2
Vdc
VCE(sat/
Current-Gain - Bandwidth Product
(lc = 0,5 Ade, VCE = 10 Vdc, f t • st = 0.5 MHzl
Output Capacitance
(VCB = 10 Vdc. IE = i test = 1 MHz)
p.
(1) Pulse Test: Pulse Width
Svmbol
VBE(onl
,-
IT
2
-
MHz
Cob
-
1000
pF
=300 "S. Duty Cycle .. 2%,
FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
There are two limitations on .. the powerhandling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves
indicate.
The data 01 Figu~e 1 is based on T J (pkl = 2000 C; t C iova, iable
depending' on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
2U
10
L'--
Te ~ 25°C
!!;
5
l-
i
1\
<.>
'"
0
I
i===
~8 1=--f;::---- iS~~~~:~U~~gATION
0.7
0.5
TJ= 200°C
BONDING WIRE LIMITED
~ 0.3 1 - - - SECOND BREAKDOWN LIMITED
ICURVES APPLY BELOW RATED VCEO
0,2
2
5
7 10
20
30
50 70 100
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
\
200
4-518
MJ15001NPN
MJ15002PNP
TYPICAL CHARACTERISTICS
FIGURE 2 - CAPACITANCES
---
100
~ 200
~
100
~
70
50
U
30
g
«
u
FIGURE 3 - CURRENT-GAIN - BANDWIDTH PRODUCT
~
;S
1000
700
500
TJ = 250Cr--
Cib
• ...; Cib
-
-.
10
t;
f.-
=>
c
c
:-
-
-
:f
:J:
b
~
'"
Cob
~
-
7
I II Ll
6
11111
"-
"
VCE = 10 V
5
-
I'''i' 11. 1iHI
I
Cob
I'--
TJ ~ 25°C
'5
;;;
Lilli
MJI5002 (PNP)
MJI5001INPN)
---MJI5001 INPN)
MJ150021PNP)
20
11111
11111
L II
10
1.5 2
5
10
20
10
VR. REVERSE VOLTAGE (VOLTS)
50
70
100
0.2
ISO
0.1
r.....
0.5 0.7
I
'C. COLLECTOR CURRENT lAMP)
10
FIGURE 4 - DC CURRENT GAIN
MJ150D1
-
-.-.
lCOoC'
200
TJ
MJ150D2
~
.I. .1.
-25°C
200
VCE = 2 Vdc
;;:
~
~
'"
~a:
20
u
10
10
I-
a
~
2
0.2
0.3
VCE = 2 Vd,
TJ=IOOoC
100
70 e- 25°C
z 50
0.5 0.7
I
'C. COLLECTOR CURRENT (AMP)
10
2
0.2
20
1\.."-
0.1
0.5
10
0.7
'C. COLLECTOR CURRENT (AMP)
20
FIGURE 5 - "ON" VOLTAGE
MJ15DD1
MJ15DD2
2.0
2.0
'V
1.6
rll
I
1.6
II
II/
~
'"
~ 1.2
c
~
W
to
~ 0.8 r--TJ =
250~
c
>
-I,,; 0.4 :::::rOOOC
vCEi..tI
o
0.2
0.3
~ ,dllB = 10
:::..
~ 1.2
~
VeE @VCE ·1 Vdc
--
.
~~
TJ = 1000C ~
t-"
0.4
~~
"I
0.5 0.7
I
5
'C. COLLECTOR CURRENT (AMP)
r-- TJ = 25°C
~ 0.8
>
>'
100°C
I- vcJ{so,i @l~/tB = 10
---
I
~
VeE @VCE = 2 Vdc
~
'"
~.,.
TJ = 1000C
~
~
,.., i-'"
'250C
o
10
0.2
20
0.3
0.5 0.7
IC. COLLECTOR CURRENT (AMP)
4-519
II
10
20
•
. MJ15001NPN
MJ15002PNP
FIGURE 6 - COLLECTOR SATURATION REGION
M~15002
MJ15001
~
2
c
~
I
s
TJ = 2soe
~
~ 1.6
>
~
w
IC = 4 A
2
\
::
'"
~
c
1\
\
c
::: 0.4
•
:!l
>
I'-..
s
:!l
>
0
0.02
0.03
O.OS 0.07 0.1
IC =4 A
0.2
0.3
1\ le=BA
j
\
'"
~...
.......
S
1. 6
~
~ o. B
I\.
O.S
0.7
I
TJ=2SoC
Ie = 2 A
;; 1.2
\IC=8A
~
ci: o. 8
9
I
c
Ie = 2 A
~
c
2
o.4
0
0.02
\..
I'0.03
O.OS 0.07
'"
0.1
0.2
0.3
lB. BASE CURRENT lAMP)
IS. BASE CURRENT lAMP)
4-520
o.s
0.7
1
MJ15003 NPN
MJ15004 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
The MJ15003 and MJ15004 are EPIBASE power transistors
designed for high power audio, disk head positioners and other
linear applications.
140 VOLTS
250 WATTS
o High Safe Operating Area (100% Tested) 250 W@50 V
o For Low Distortion Complementary Designs
•
High DC Current Gain hFE = 25 (Min) @ IC
= 5 Adc
Lr~
r~K
ESEATlN!~
PLANE
MAXIMUM RATINGS
Symbol
Value
Unit
VCEO(su~1
140
Vdc
Collector-Base Voltage
VCBO
Vdc
Emitter-Base Voltage
VEBO
140
5
Collector Current _. Continuous
IC
20
Adc
Base Current - Continuous
18
Adc
Emitter Current - Continuous
IE
Total Power Dissipation@ TC - 25°C
Derate above 25 DC
Po
TJ.Tstg
5
25
250
1.43
-65 to +200
Symbol
Max
Unit
ROJC
0.70
°C/W
TL
265
°c
Rating
Collector-Emitter Voltage
Operating and Storage Junction
Temperature Range
Vdc
Adc
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering
PIN 1. BASE
2. EMITTER
CASE, COLLECTOR
Watts
W/oC
DIM
Purposes; 1116" from Case for -z
a'"'"
MJ15004
VCE" 2 Vdc_
t---.
~150C
~
-
10 0
10
50
;;:
30
""
10
1
0.1
...'"ffi
.....
20
0.3
0.5
0.7
1•
Vel: "2 Vdc
15°C
50
30
'"
B
,
~
20
r":
u
o
0
w
J!o
1
5
3
1
0.2
20
10
i--- TJ" 100 uC
fi
ot::=
z
u
0
20 0
0.3
10
0.5 0.7
10
IC. COLLECTOR CURRENT lAMP)
IC. COLLECTOR CURRENT lAMP)
FIGURE 5 - "ON" VOLTAGE
MJ15003
MJ15004
/,
16
'I
V-/ I
;;;
!3
w
'II
hI
1/1
II I
I. 6
~
o
0
~
2
1.1
'""
VSE@VCE"1Vdc
!3
0.0 r--TJ = 25°C
>
0
=:::t== V
>'
~"trll'
0.4
~VCEI~') @Iclis = 10
11'1'1
o
0.2
0.3
0.5
....-::V
IV
IJ
V
~
~
>
>'
1. 2
TJ=100oC
O.
~C
'j i
0.7
10
I::::'~
-l-
4 100 C I I ~II .II
~ VCEI,ar) @Iclla - 10
0.2
IC. COLLECTOR CURRENT lAMP)
i VCE =1 Vdc
I11I
°
o
20
~af
O. 8-TJ I 25 0lC
TJ - 100°C
..Jd::1"
25°C
0.5
10
IC. COLLECTOR CURRENT lAMP)
4-523
/
/1
V
20
•
MJ15003 NPN
MJ15004 PNP
FIGURE 6 - COLLECTOR SATURATION VOL 'rAGE
MJ15003
;;;
MJ15004
2
~J= 2s!e
!:;
o
~
~
1.6
~
ffi
~
8
•
0.4
o
~
'"
le=2.SA
>
'"w
_\Ie = lOA
::
~
\
\
:\
"-
0.02 0.03
r-...
O.S
\ Ie = 10 A
I. 2
\
!\
o. 8
o.
4\
8
0.3
I II
TJ = 2S'C
IC = 5 A
t;
"j
t0.2
I
I
i'-
o
~
O.OS 0.07 0.1
I
IC = 2.S A
I.6
~
o
Ie = SA
l. 2
~ O. 8
o
o
w
o
:::;;
s
2
0.1
I
>
0
0.03
i'O.OS 0.07 0.1
"- ......
0.2
0.3
0.5 0.7
IB, BASE CURRENT lAMP)
18. BASE CURRENT lAMP)
4-524
NPN
PNP
M]15dbll
r~jlS@li2
10AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMENTARY
POWER TRANSISTORS·
The MJ15011 and MJ15012 are' Power Base power transistors
250 VOLTS
200 WATTS
designed for high-power audio, disk head positioners, and other
linear applications. These devices can also be used in power
switching circuits such as relay or solenoid drivers, dc·to-dc
converters or inverters.
•
o High Safe Operating Area (100% Tested)
1.2 A@ 100 V
o Completely Characterized for Linear Operation
o High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V
. VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A
o For Low Distortion Complementary Designs
lr~
r~K
ESEATIN!~
i
PLANE
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO(sus)
250
Vdc
Collector-Emitter Voltage
VCEX
250
Vdc
Rating
Emltter·Base Voltage
VEB
5
Vdc
Collector Current - Contmuous
IC
ICM
10
15
Adc
2
Adc
-Peak(l)
Base Current - Contmuous
IS
ISM
- Peak (1)
Emitter Current - Continuous
IE
IEM
- Peak III
Total Power DiSSipation
Derate above 25°C
@
TC
PD .
25°C
==.
Operating and Storage Junction
Temperature Range
TJ, Tst9
5
12
20
200
1.14
-65 to +200
Adc
°c
DIM
C
A
B
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for
Symbol
Max
Unit
ROJC
0.875
°C/W
E
TL
265
~C
F
G
Soldering Purposes
D
H
=-
5 ms, Duty Cycle
~
J
K
10%.
NOTE:
1. DIM "U"IS OIA.
Watts
W/oC
THERMAL CHARACTERISTICS
(1) Pulse Test: Pulse Width
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
n
R
MILLIMETERS
MAX
MIN
-
39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67 11.18 0.420
5.33· 5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
4.09 0.151
3.84
- 26.67
Collector connected to case.
CASE 11·01
6.35
0.99
(TO·3)
ThIS IS advance information and
Power Base is
0
..
specIficatIons are subject to
chango Without notice.
trademark of Motorola.
4-525
INCHES
MIN
MAX
1.550
0.83l1
0.300
0.043
0.135
1.197
0.440
0.220·
0.675
0.480
0.161
1.050
MJ15011 NPN • MJ15012 PNP
ELECTRICAL CHARACTERISTICS
I
1Tc = 25°C unl." othe,w;s. noted)'
Svmbol
Min
Max
Unit
VCEOlsusl
250
-
Vde
ICEO
-
1
mAde
ICEX
-
500
~Ade
IESO
-
500
~Ade
20
5
100
-
0.8
2.5
-
2
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
IIc
= 100 mAl
Collector Cutoff Current
IVCE = 200 Vdel
Collector Cutoff Current
IVCE = 250 Vde, VSEloNI
= 1.5 Vdel
Em itter Cutoff Current
IVSE
= 5 Vdel
ON CHARACTERISTICS 111
DC Current Gam
IIc = 2 Ade, VCE = 2 Vdcl
IIc =4 Ade, VCE = 2 Vdel
Collector-Emitter Saturation Voltage
IIC = 2 Ade, IS = 0.2 Adcl
IIC = 4 Ade, IS = 0.4 Adcl
Base-Emitter On Voltage
IIC = 4 Ade, VCE = 2 Vdcl
•
-
hFE
Vde
VCElsa'1
VSElonl
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
IVCS = 10Vde, f= 1 MHzl
SECOND SREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IVCE
IVCE
=
=
50 Vdc, , = 0.5 sl
100 Vde,' = 0.5 sl
111 Pulse Test: Pulse Width = 300 ~s, Duty Cycle" 2%.
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA
FIGURE 1 - DC CURRENT GAIN
200
f- i- i--
-
10
VCE' 2 Vde
.......
100
......
z
~
........
I'
50
I-
~
a
d,
,\"
20 -MJI5011-- MJI5012 - - '-'
c
I
\
.# 10
5
_
5
2-
-
-
- -
BONOINGWIRE LIMIT
THERMAL L1MIT@TC'25OC
(SINGLE PULSEI
SECONO BREAKOOWN LIMIT
--
I2
0.1
0.2
0.5
O. I
10
15
Ic, COLLECTOR CURRENT
20
30
50
70
100
'\.
'\.
150
VCE, COLLECTOR·EMITTER VOLTAGE (VOL TSI
4-526
200
300
NPN
MJ15022
MJ15024
16 AMPERE
SILICON POWER TRANSISTORS
SILICON
POWER TRANSISTORS
The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other
linear applications.
200 and 250 VOLTS
250 WATTS
•
High Safe Operating Area (100% Tested) 2A@80V
•
High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc
•
lr~
r~K
ESEATlN/~
PLANE
MAXIMUM RATINGS
Symbol
MJ15022
I
MJ15024
Unit
Collector-Emitter Voltage
VCEO
200
I
250
Vdc
Collector-Base Voltage
VCBO
350
I
400
Vdc
Emitter-Base Voltage
VEBO
7
Vdc
Collector-Emitter V,oltage
VCEX
400
Vdc
IC
16
30
Adc
Rating
Collector Current - Continuous
Peak il)
Base Current - Continuous
IB
5
Adc
Total Power Dissipation@TC-25OC
PD
250
1.43
Watts
W/oC
TJ. T stg
-65 to +200
°c
Derate above 2SoC
Operating and Storage Junction
STYLE 1:
.
PIN 1. BASE
2. EMIITER
CASE: COLLECTOR
NOTE:
1. OIM "0" IS OIA.
Temperature Range
DIM
THE.RMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
ROJC
I
I
Max
Unit
A
0.70
°C/W
C
B
D
(1) Pulse Test: Pulse Width - 5 ms, Duty Cycle ~ 10%.
E
F
G
H
J
K
Q
R
MILLIMETERS
MAX
MIN
INCHES
MIN
MAX
-
39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67 11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
3.84
4.09 0.151
26.67
Collector connected 10 case.
635
0.99
CASE 11·01
(TO·3)
4-527
I
1.550
0.B30
O.JOO
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050
MJ15022, MJ15024 NPN
ELECTRICAL CHARACTERISTICS
I
ITC" 25°C unle.s otherwise noted,)
I
Characteristic
Symbol
Min
MIX
200
250
-
-
250
250
-
500
500
-
500
15
5
60
-
1.4
4.0
Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (1)
(I~ / 100 mAde, IS = 01
VCEO(susl
MJ15022
MJ15024
Collector Cutoff Current
(VCE
(VCE
MJ15022
MJ15024
ICEO
= 150 Vde, IS = 01
IVCE = 200 Vde, IS = 01
MJ15022
MJ15024
(VCE
Emitter Cutoff Current
= 7 Vde,
IESO
= 01
IS
,
ICEX
= 200 Vde, VSE(offl = 1.5 Vdel
= 250 Vde, VSEloffl = 1.5 Vdel
Collector Cutoff Current
IVCE
-
"Ade
IJAdc
,uAdc
'Both
SECON.D BREAKDOWN
•
Second Breakdown Collector Current with Base Forward Biased
{VeE =<.50 Vdc, t::: 0.5 s (non-repetitive))
(VeE"" 80 Vdc, t::: 0.5 ~ (non-repetitive))
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
Collector-Emitter Saturation Voltage
(lC
(lC
= 8 Ade, IS = 0.8 Ade)
= 16 Ade, IS = 3.2 Ade)
=8
Ade, VCE
Vde
VCElsat)
Base-Emitter On Voltage
(lC
-
hFE
= 8 Ade, VCE = 4 Vde)
= 16 Ade, VCE = 4 Vdel
VSElon)
-
IT
Cob
2.2
Vde
4
-
MHz
-
500
pF
= 4 Vdel
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 1 Ade, VCE = .10 Vde, 'test = 1 MHz)
Output Capacitance
IVCS
= 10 Vde,
IE
= 0, I test = 1
MHz)
11) Pulse Test: Puis. Width = 300 "s, Duty Cycle .. 2%.
FIGURE 1 - ACTIVE,REGION SAFE OPERATING AREA
100 ". ' , _
~
~
5°~'fl
f-+-+
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves
indicate.
The data 01 Figure 1 is based on T J(pk) = 200°C; T C is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
1--
20
0.2 ~+:j::::t+l+rn!=+:J=++~M~Jrtlt!50~21'2~t:+:f::4+l+tj
01~~~-L~~~~~~-L~~M~J~I~50~24~-L~~-L~~~
0.1 0.2
0.5 10
20
50 100
250 500 I k
VCE, COLLECTOR-EMITTER VOLTAGE IVOLTS)
4-528
MJ15022, MJ15024 NPN
TYPICAL CHARACTERISTICS
FIGURE 2 - CAPACITANCES
4000
300 0
--
r-
FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT
C,b
I
TJ ° 25°C
Tr
25°C
VCEolOV
~ 1000
'Test'" 1 MHz
,
7
w
'-'
~ 500
i'-
5
Cob
j
--I'--
<.i
I
""
U
;::
i'
100
I
40
03
0.5
50
10
30
50
100
03
300
FIGURE 4 - DC CURRENT GAIN
200
B
g
j
~
10
I
I
Vl
IB
VCE ° 4 V
-~
TJ ° 25°C
50
-~
g 14
--
w
'"'"
:;
~
10
DB r-Tr 25 0 C-
0
>
>-
10
VBE(on)@VeE"4V
-I--
IIII
t- _I,OOOC
I I
50
2r--
05
1.0
2.0
50
'C. CO LLECTO R CU RRENT lAMPS)
10
°o
20
05
02
~
10
1I
IB
TJ '" 25°C
w
14
'"w~
1.0
\
'\
c
>
\
~
"'c~
0.6
c
'-' 02
~
>
0
0.03
/
\
\
16 A
IC04~
I
lin
IIII
0.1
0.2
BA
~
-
I-
-t++
II
0.5
'1.0
2.0
lB. BASE CURRENT lAMPS)
4-529
5.0.
10
30
1/
i'
i..--'~
100°C
20
IC. COLLECTOR CURRENT lAMPS)
2:
'"~
-
VCEI"ll @lIC/IB ° 10
- 2 5 0 C-
FIGURE 6 - COLLECTOR SATURATION REGION
c
{//
i
0
2:
~
20
10
02
50
FIGURE 5 - "ON" VOLTAGE
>-
~
2.0
10
TJ ° 100°C
100
"~
05
IC. COLLECTOR CURRENT I.AMPS)
VR. REVERSE VOLTAGE IVO LTSI
/.
50
10
20
•
MJE51T
thru
MJE53T
5 AMPERE
POWER TRANSISTORS
NPN SILICON
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
250, 300, 350 VOLTS
80 WATTS
· .. designed for high voltage inverters, switching regulators and line·
operated amplifier applications. Especiallv well suited for switching
power supplv applications.
•
•
Intended as Economical Substitutes for the Electricallv Similar
TIP51 thru TIP53 Series
•
High Coliector·Emitter Sustaining Voltage
VCEO(sus) = 250 V(min) - MJE51T
= 300 V(min) - MJE52T
= 350 V(min) - MJE53T
@
25 mAdc
MAXIMUM RATINGS
Rating
Svmbol MJE51T MJE52T MJE53T
Unit
COllector-Emitter Voltage
VCEO
250
300
350
Vdc
Collector· Base Voltage
Vca
350
400
450
Vdc
Emitter -8ase Voltage
Collector Current
.
-..•
VEa
Continuous
IC
•• Peak
Base Current
la
Total Power DiSSipation @.'TC '- 25°C
Derate above 2SoC
Po
Operating and Storage Junction
Temperature Range
..
....
...
..
6.0
5.0
10
..
2.0
80
_0.64
TJ.T"Q
~-65to+150~
-=11- 5
Adc
t-I
Watts
W/OC
K
!
°c
Symbol
ROJC
I
I
Max
I
Unit
1.56
I
°C/W
0:
'""'"
-
...'"
I-
~ 60
z
'"
~
--
"
t-...
..........
Thermal Derating"
~ 40
'"0:
..........
"'" "' -~
~
...'"
20
1--- . - _.00
MilliMETERS
DIM MIN MAX
A 15.11 15.75
9.65 10.29
B
4.06
4.B2
C
0.64
0.89
D
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
1.14
L
1.27
N
4.83
5.33
0
2.54
3.04
R 2.04
2.79
1.14 • 1.39
S
T
5.97
6.48
1.27
U
0.76
114
V
.......... Second
..........BreakdDV'4h Derating
._- --
20
40
100
120
60
80
TC. CASE TEMPERATURE (DC I
f"'..
f---
~
140
160
4-530
-
il~
l~'
STYLE I.
PIN 1. BASE
2 COLLECIOR
3 EMITTER
4. COLLECTOR
~
80
SECT A A
I-J
FIGURE 1 - POWER DERATING
i!
J
~
t
,"";1 ;~
J~r-
I~
-1J~R
Thermal Resistance, Junctlory to Case
100
F/i+-
!
A
Jt u
Adc
THERMAL CHARACTERISTICS
Characteristic
w~IT
C
I~U
Vdc
L
o~I~LG
NOTE
I DIM L& H APPLIES
TO ALLLEAOS
INCHES
MIN MAX
0.595 0.620
0.3BO 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0014 0022
O.SOO 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045· 0.055
~:~~ ~
OOSO
0.045
CASE 221A-02
TO·220AB
-
MJE51T thru MJE53T
ELECTRICAL CHARACTERISTICS IT C = 25 0 C unless otherwISe
notedl.
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (11
(lC = 25 mAde, IB = 0)
Collector Cutoff Current
MJE51T
MJE52T
MJE53T
VBE
VBE
VBE
= 5,0 Vdc,
-
-
-
1.0
1.0
1.0
mAde
-
MJE51
MJE52
MJE53
,
lEBO
-
mAde
ICES
= 0)
= 0)
= 0)
Emitter Cutoff Current
(VBE
-
-
-
Collector Cutoff Current
= 350 Vdc,
= 400 Vdc,
= 450 Vde,
-
250
300
350
ICED
(VCE = 150 Vde, IB = 01
(VeE = 200 Vde, 18 = 01
(VCE = 250 Vde, IB = 01
(VCE
(VCE
(VCE
Vde
VCEOlsu,1
MJE51T
MJE52T
MJE53T
.-
1.0
1.0
10
-
-
30
-
50
-,
-
-
-
2.0
Vde
-
2.0
Vde
1.0
mAde
IC = 01
ON CHARACTERISTICS
DC Current Gam( 1)
(lC
(lC
= 0,3 Ade,
= 5.0 Ade,
= 10 Vde)
= 10 Vdc)
Collector·Emltter Saturation Voltage
(lC
= 5.0 Ade,
-
hFE
VCE
VCE
IB
=
VeEI,atl
2.0 Adc)
Base·Emltter On Voltage
(lC = 5.0 Ade, VCE = 10 Vdc)
VBE(onl
DYNAMIC CHARACTERISTICS
Smail-Signal Current Gam
(IC
= 0.2 Ade,
VCE
Smail-Signal Current Gam
(lc
= 0.2 Ade,
VCE
= 10 Vde,
= 10 Vdc,
2.5
-
-
-
hie
30
-
-
-
-
150
pF
0.5
-
2.0
-
f = 1.0 kHz)
Output Capacitance
(VCB
Ihle l
= 10Vde, f = 1.0MHz)
Cob
IE
= 0,
f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
ton
-
(VCC = 125 Vde, V8E(off) = 5.0 Vdc,
IC = 2.5 Adc, ISl = IB2 = 0.5 Ade)
Turn-Off Time
toff
(VCC= 125Vdc.IC= 2.5 Ade,
VBE(off) = 5.0 Vde, IBl = IB2 = 0.5 Adel
(lIPul,e Test: Pulse W,dth" 300 "': Duty Cycle " 2.0%
4-531
'"
jlS
MJE51T thru MJE53T
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - DC CURRENT GAIN
_00
VCC
+125 V
z
RC • SO
SCOPE
RB·20
...:;;:
0-
~
a:
::>
'"c
'"
~
Ir.lt~50ns
DUTY CYCLE· 1 0%
-5.0 V
RB and RC VARIEO TO OBTAIN DESIRED CURRENT LEVELS
•
01 MUST BE FAST RECOVERY TYPE ••g
MBD5300 USED ABOVE IB -100 mA
MSD6100 USED BELOW IB ·100 mA
VCE' 10 Vde
TJ=250 C -
100
70
""
SO
30
1\
20
10
0.05
'\
\
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 4 - ACTIVE·REGION SAFE OPERATING AREA
20
0
i
-
5. 0
.-~
~
0-
~
2. 0
TC
0:
a: 1. 0
i:!
-
=25°C
...-
-,.;..,'
de
--
~
5.Dms
_ Bondmg Wire limit
C
O. 5 ---- Thermal limit (Single Pulse)
~
O. 2
'"
O. 1
0:
0-
c
5
0.02
5.0 7.0
~om'
-
,ci=-:.:j::·t·
The data of Figure 4
-
~ l--
Second Breakdown limit
Curves applv below flted VCEO
~OO.' -
There are IWD hmltatlons on the power handling ability of a
tranSistor average Junction temperature and second brea'kdown.
Safe operating area curves IOd,cate Ie - VeE limits of the tranSistor
that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater diSSipatiOn than the curves
indicate.
.......,
MJE5lT
MJE52T
MJE53T
-
~
r-r::
10
20
30
50 70 100
200
VCE. COLLECTOR·EMITTER VOLTAGE (VOL TS)
300
IS
based on TC
=
25°C; TJlpk)
IS
variable dependmg on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) ~ 1S00C. At
high case temperatures, thermal limitations will reduce the power
that can be handled to lIalues less than the limitations imposed bV
second breakdown. Second breakdown limitations do not derate
the same as thermal limitations. Allowable current at the voltages
shown on Figure 4 may be found at any case temperature bV
using the appropnate curve on Figure 1.
500
4-532
MJEI05
(SILICON)
MEDIUM-POWER PNP SILICON TRANSISTOR
5AMPERE
POWER TRANSISTOR
... for use as an output device in complementary audio amplifiers
up to 20·Watts music power per channel.
PNP SILICON
•
High DC Current Gain - hFE = 25·100@ IC = 2.0 A
•
Thermopad
50 VOLTS
65 WATTS
High·Efficiency Compact Package
o Complementary to NPN MJE205
MAXIMUM RATINGS
Symbol
Value
VCEO
50
Vde
Collector-Base Voltage
VCB
50
Vde
Emitter-Base Voltage
VEB
4.0
Vde
IC
5.0
Ade
Rating
COllector-Emluer Voltage
Collector Current
Base Current
Total Power Dissipation @TC - 25°C
IB
2.5
Ade
POlll
65
0.522
Watts
W/oC
TJ. Tstg
-55 to +150
°c
Derate above 2SoC
Operating and Storage Junction
Unit
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Th'ermal Resistance, Junction to Case
(1) Safe Area Curves are Indicated by Figure 1. Both limits are applicable and must beobscrved.
ELECTRICAL' CHARACTERISTICS ITC
Characteristic
=
25°C unless otherwise noted I
I
Symbol
I
Min
I Max I
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage (2)
IIc
= 100 mAde, IB = 0)
Collector Cutoff Current
IVCB
IVCB
= 50 Vde, IE = 0)
= 50 Vde,IE = 0, TC = 150°C)
Emitter Cutoff Current
IVBE
= 4.0 Vde, IC = 0)
Vde
BVCEO
50
-
-
0.1
2.0
-
1.0
mAde
ICBO
lEBO
mAde
IIc = 2.0 AdC, VCE = 2.0 Vdc)
A
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSC
0.105 0.115
0.032 0.034
0.595 0.645
90 TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080
B
C
D
F
G
H
J
K
n
-
hFE
IIc =2.0 Ade, VCE = 2.0 Vdel
Base-Emitter Voltage
INCHES
MIN MAX
M
ON CHARACTERISTICS
DC Current Gain
MILLIMETERS
DIM MIN
MAX
25
100
-
1.2
Vde
VBE
(2) PulsaTe$t: Pulse Width ~3001J1, Duty Cycle ~2.0%.
4-533
R
U
V
16.13 16.38
12.57 12.83
3.18 3.43
1.09 1.24
3.51 3.76
4.22 BSC
2.67 2.92
0.813 0.864
15.11 16.3B
90 TYP
4.70 4.95
1.91 2.16
6.22 6.48
2.03
CASE 90·05
TO·127
•
MJE105
FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA
I0
1.0~TJ.'5IJOC
~ 5. 0
~ 3.0
~
E 2.0
'"
1.0p-----THERMAL LIMIT iii TC = 2SoC
~
::
It=:' . -
Safe operating area curves indicate Ie . VeE limIts of the transistor
that must be observed for reliable operation; I.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provIded T J(pk) ,;;1500 C. At hIgh case
1\ \
OONOING WIRE LIMIT
SECOND OREAKOOWN LIMit
5
o
'-'
~
~
". ~.Oms
U
a'"
'"
There are two limitations on the power handling ability of a
transistor; average Junction temperature and second breakdown.
100",
,
temperatures, thermal limitations will reduce the power that can be
handled to v~lues less than the limitations Imposed by second
breakdown .
de
.3
1\
.2
o.1
1.0
2.0
3.0
5.0
7.0
10
20
50
30
VCE. COLLECTOR·EMITIER VOLTAGE IVOLTS)
FIGURE 3 - DC CURRENT GAIN
FIGURE 2 - "ON" VOLTAGES
2.0
I"I
1.8
~
~
w
...
ffi
:::;
<[
'"o'"
1.4
1.2
1.0
VaEI... ) iii Ic/'O =10
~ 0.8
II
0
> 0.6
0.4
r--
0.2
o
0.01
~
r---.
I .I
t
I~
......
0.02 0.03 0.05
0.1
0.2 0.3 O.S
1.0
IC. COLLECTOR CURRENT lAMPS)
;
1.0
~
0.1
'"'"
G
0.3
~I-"
:ssoJ
~
O. 1
0.01
2.0 3.0 5.0
0.02 0.03
0.1
0.05
0.2 0.3
~
~
~
0
,
"-
"I',
,
0
25
0.5 0.7 1.0
IC. COLLECTOR CURRENT lAMPS)
~
0
"'~
FIGURE 4 - POWER DERATING
60
=2.0 V
r-....
...... "-
25 0C
,
65
VCE
'TJ ~'S00IC
f-o'"l-I--
'-'
c 0.2
/
I I III
1 VeE I... ) iii 'C/'o' 10
2.0
E 0.5
~
.....
VOE iii VCE" 2.0 V
1
3.0
N
TJ =250C
1.6
0
5.0
50
15
100
. Te. CASE TEMPERATURE (OC)
4-534
126
"
150
175
2.0 3.0 4.0
MJEI10 thru MJE172 PNP (SILICON)
'MJE 180 thru MJE182 NPN
COMPLEMENTARY PLASTIC SILICON
POWER TRANSISTORS
3 AMPERE
designed for low power audio amplifier and low current, high
speed switching applications.
POWER TRANSISTORS
COMPLEMENTARY SILICON
.. Collector· Emitter Sustaining Voltage VCEO(sus) = 40Vdc - MJE170, MJE180
= 60 Vdc - MJE171, MJE 181
= 80 Vdc - MJEl72, MJE 182
•
DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc
= 12 (Min) @ IC = 1.5 Adc
•
Current·Gain - Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAde
•
Annular Construction for Low Leakages'CBO = 100nA(Max)@lRatedVCB
40-60·80 VOL TS
12.5 WATTS
•
MAXIMUM RATINGS
Rating
Symbol
Collector-Base Voltage
COllector-Emitter Voltage
Emltter·Base Voltage
ColI~ctor
Current
MJE170 MJE171
MJE180 MJE181
MJE172
MJE182
Unit
Ves
60
80
100
Vdc
VeEO
40
60
80
Vdc
VES
----70-
Vdc
Ie
- - - - 3.0 - - - ---6.0----
Adc
Continuous
Peak
Base Current
IS
1.0
Adc
T A - 25°C
PD
1.5_
---0.012_
Watts
Total Power Disslpation@Tc =- 25 0 C
PD
_ 1 2 . 5 - -_ _
Total Power Dissipation
Derate above 25°C
@
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ,Tstg
WIDe
- - - - 0.1 - - - -
Watts
WIDe
_ - -65 to ' 1 5 0 - _
De
,
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
Unit
10
Thermal Rt!slstance, Junction to
83.4
Ambient
FIGURE 1 - POWER DERATING
DIM
TA Te
2814
;;; 241 1 ......
c:
'"z~
2010
~
1680
o
fi
I--.
i5 126.0
,
.-
"" , ,
.....
~
~
~
N
riA
K
M
........
"'......
"' "'
Q
R
~~
40
60
A
H
0
10
I--
"re
0420
o
-
o
......
~ 0840
-
8u
100
120
u
v
~
140
160
r. TEMPERATURE (DC)
MILLIMETERS
MIN MAX
10.80 11.05
7.49
7.75
2.41
2.67
0.51
0.66
2.92
3.18
2.~1
2.46
2.16
2.41
0.38
0.64
15.37 16.64
30 TYP
3.76
1.14
0.64
3.68
1.02
4.01
1.40
0.89
3.94
30 TYP
0.148
0.045
0.025
0.145
0.040
eASE 77-03
TO·126
4-535
INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.085 0.095
0.015 0.025
0.605 0.655
0.158
0.055
0.035
0.155
MJE170, MJE171, MJE172,'PNP MJE180, MJE181, MJE182 NPN
ElECTR ICAl CHARACTER ISTICS IT C = 25°C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Max
40
60
80
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC = 10 mAde, IS = 0)
a
Collector Cutoff Current
(VCS = 60 Vde, IE = 0)
(VCS = 80 Vde, IE = 0)
(VCS = 100 Vde, IE = 0)
.
(VCS = 60 Vde, IE = 0, TC = 150°C)
(VCS = 80 Vde, IE = 0, TC = 150°C)
(VCS = 100 Vde, IE = 0, TC = 150°C)
Vde
VCEO(sus)
MJE 170, MJE 180
MJE171, MJE181
MJEl72, MJE182
"Ade
ICSO
MJE170,
MJE171,
MJEl72,
MJE 170,
MJE171,
MJE 172,
-
MJE180
MJE181
MJE182
MJE 180
MJE181
MJE 182
-
0.1
0.1
0.1
0.1
0.1
0.1
-
0.1
50
30
12
250
-
-
0.3
0.9
1.7
-
1.5
2.0
-
1.2
50
-
-
50
30
-
Emitter Cutoff Current
(VSE = 7.0 Vde, IC = 0)
mAde
"A de
IESO
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vde)
(Ie = 500 mAde, VCE = 1.0 Vde)
(Ie = 1.5 Ade, VCE = 1.0 Vde)
-
hFE
Collector-Emitter Saturation Voltage
(Ie = 500 mAde, IS = 50 mAde)
(Ie = 1.5 Ade, IS = 150 mAde)
(Ie = 3.0 Ade, IS = 600 mAde)
Vde
VCE(sat)
. Base-Emitter Saturation Voltage
(Ie = 1.5 Ade, IS = 150 mAde)
(Ie = 3.0 Ade, IS = 600 mAde)
-
-
Vde
VSE(sat)
Sase-Emitter On Voltage
(Ie = 500 mAde, VCE = 1.0 Vde)
Vde
VSE(on)
DYNAMIC CHARACTERISTICS
Current-Gain - Sandwidth Product (1)
(lC = 100 mAde, VCE = 10 Vde, f test = 10 MHz)
fT
Output Capacitance
(VCS = 10 Vde, IE
Cob
(1) IT = Ihle
= 0, 1= 0.1
MHz)
,e I test
MHz
MJE170/MJEl72
MJE180/MJE182
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
30 0
VCC
+30 V
A
100
tr. tf:::.l0 ns
w
-=
VCC = 30 V _
tICI1B = 10
VBE(off) = 4.0 V
TJ - 25 0 C"=
=F==
f=
~
·51
~
Ir
SCOPE
RB
-9.0 V
I II
200
RC
+~] --\--,
pF
'"t=--
0,
-=
50
30
...
20
Id
10
-4V
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
7.0
5.0
0, MUST BE FAST RECOVERY TYPE, e9:
MBD5300 USED AboVE 18 ~100 rnA
MSD6100 USED BELOW IB ~100 rnA
3.0
0.03
For PNP test circuit, reverse all polarities.
"'''i'-..
./
" ......
PNP MJEI70/MJE172
I
I I I I II
0.05 0.07 0.1
NP~ MJ~'80/MIJE'~2
0.2
0.3
0.5
0.7
1.0
IC, COLLECTOR CURRENT (AMP)
4-536
2.0
3.0
MJE170, MJE171, MJE172, PNP MJE180, MJE181, MJE182 NPN
FIGURE 4 - THERMAL RESPONSE
1.0
0.7 - 0 0.5
0.5
-
~c
~~
0.3
~~
0.2
w«
.... c
~
ffi~
til~
--
_0.2
-0.1
~
0.05
O. 1
~~O.O
........
)
0.03
~
r--- ~O TN~Ll TrEI)
OUTY CYCLE. 0 = 11/11
0.02
i
0.05
J1
0.1
0.1
1.0
0.5
0 CURJES
I::::::
.
~~~
~0.01
0.0 1
0.01
0JC(I) = r(I)OJC
8JC = 100 CIW Max
~~ 1= ===
0.01
2~O.05 ~
-",
=-
1:0"""
PULSE TRAIN SHOWN
READ TIME AT 11
1- -
?,Pk) -; TC P(Pt)
I
I II
5.0
1.0
A~PL~ F~RI POWER= =
1- -
=
-
~JCi')1
I
10
I
50
10
F
r--
100
200
I. TIME (ms)
ACTIVE·REGION SAFE OPERATING AREA
FIGURE 6 - MJE180. MJE181. MJE182
FIGURE 5 - MJE170. MJE171. MJEl72
10
10
5.0
~ 2.0
....
'"
I-- - - -
~
de
Fe
0.5
:'.11~
'"~O.05
F
~
0.01
0.0 1
1.0
~t=
..... /
"
...........
~ 1.0 E--
a
--
.....
~
100
'\
PSt
SOUps
5.0
'"
$
....
1.0 - -
50
1.0
VCE. COLLECTO R-EMITTER VOLTAGE (VOLTS)
transistor - average Junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5and 6isbasedonTJ(pk) = 1500 C;TC is
100
~
100
~
70
-
'" '"
:--
)/
l ...
I II
MJE181
20
30
10
VCC = 30 V_
ICIIB 10.=
IBl IB1TJ = 15°C
I'
........
TJ ·15 0 C - -
~.
r-....
)0
~
50
'"
«
....
........
.......
"-
t--.....
z
U
;;:
PNPMJE170/MJEl72 -NPN MJE180/MJE182 :-II
........ :-..
Gib
t'-... . . . .
30
;3
50
01-- - - - PNP MJE170/MJE172
I-I I I I II PN MIJEliO/MJEI181
10
0.03
005 0.0) 0.1
0.1 0.3
0.5 0.7
100
ture, thermal limitations will reduce the power that can be handled
to values Jess than the limitations imposed by second breakdown.
w
"-
",-
r......
)0
FIGURE 8 - CAPACITANCE
......
30
50
variable depending on conditions. Second breakdown pulse limits
are valid for dutV cvcles to 10% provided TJ(pk) < 150°C. TJ(pk)
may be calculated from the data in Figure 4. At high case tempera-
100
ts
300
R~T,E~ YfEO -+~~~::~
5.0 ).0
3.0
FIGURE 7 - TURN·OFF TIME
-.
'"',
VCE. COLLECTOR· EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
1000
)00
500
TJ 150°C
BONDING WIRE LIMITED
THERMALLY LlMITED@
TC = 15°C (SINGLE PULSE)
SECOND 8REAKDOWN LIMITED
CURVES APPLY BELOW
I
0.0 1
1.0
100
t'x
de
0.0 1
I I
f".....
5.0ms
O. 5
-- _ _ _-_ _
:='" o.1
~ o. 1 =
'"~O.O 5==-
TJ =150°C
5.0 ms
- BONDING WIRE LIMITED
- : - THERMALLY LIMITED @ ,~
TC =15°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO -MJE170
MJE171
MJE171
5.0
10
1.0 30
10
30
-
500ps
y
.....
~ 1.0
~
-- ~~~Opsm
.....
~
1.0
............
20
I-
........
Cob
i1.0
10
0.5
3.0
IC. COLLECTOR CURRENT (AMP)
0.7
1.0
1.0
3.0
5.0
).0
- --
10
VR. REVERSE VOLTAGE (VOLTS)
4-537
r-..........
20
-
30
50
MJE170, MJE171, MJE172, PNP MJE180, MJE181, M,JE182 NPN
PNP
NPN
MJE170, MJE171, MJE172
MJE180, MJE181, MJE182
FIGURE 9 - DC CURRENT GAIN
200
";C
'"
i
•
g
~
T~ J1150'C
200
VCE= 1.0 V
~
ii- t-
10 0
"
~
ill
0
'"
-55'C
30
-I--
a'"
~
'-'
~
0
10
0.03
0.05 0.07 0.1
VCE-l.oV
"-
25'C
10 0
;C
25'C
7O
-r-.,
f--j-TJ= '10~C
0.2
0.3
0.5 0.7
c
i
~
1.0
~3.0
70
r-
-55'C
50
~
.....
" "-"' ~
30
0
""
10
0.03
2.0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
IC. COLLECTOR CURRENT lAMP)
IC. COLLECTOR CURRENT lAMP)
FIGURE 10 - "ON" VOLTAGES
--,--
1.4
f-- TJ = 25'C
1. 2
-
I
~ 1.0
V~EI~tJ ~ IcllB - 10
c
~ o.S---+=-++
~c o.6 ,...VSE@V,CE= 1.0 V
0.4
I
I
o. 2
;-
0
0.03
V
~ 1.0
~
VCElsat)
0.2
0.3
I
'"~
'"«
~
'">
1.0
I
2.0
V
r- VBEI~t)I@IIC/lB =10
V
f-'"'"
r-/
0.6 t-- VBE @VCE = 1.0 V
./
VC)ElsatJ@ IcllB = 5.0 and 10
o
3.0
v
0.8
o. 2
Ic/lB = 5.0
0.5 0.7
II
>. 0.4
./ /'
V
IcIIB=~
0.05 0.07 0.1
1.2
/ /
>
>~
'---1/
1.4
- TJ = 25'C
0.03
0.2
0.05 0.07 0.1
IC. COLLECTOR CURRENT lAMP)
0.3
--
0.5 0.7
1.0
2.0
3.0
IC. COLLECTOR CURRENT lAMP)
FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.0
U
"-
§ +1 .0
~
I-
ill
JJ
'APPLIES FO R IcIIB" hFE/2
III
I II
II
-ttr
$
S
g;
~
~
-1.0
i
-55 DCto +25 0 C
~
j..}
250C to 150 C
OVB FOR VBE
-2.0
l-
i
-3.0
0.03
I I
I I
:..-
0.2
0.3
0.5
III1.0
0.7
~ -1.0
3.0
IC. COLLECTOR CURRENT lAMP)
25'Cto~~V
t---
-3.0
0.03
OVB FOR VBE
25,h
I I II L
I III
0.5 0.7 1.0
-55'C to
II II
II II
0.05 0.07 0.1
0.2
0.3
IC. COLLECTOR CURRENT lAMP)
4-538
./
1111.,./ V
w
i
./
V
tttr
- 55 0 Cto 250C
l-
2.0
250C to 150 0 C
"BVC FOR VCElsatl
~ -2.0
III
0.05 0.07 0.1
II II
II II
ill
u
...- . /
J1LII
I IIII
"APPLIES FOR Ic/IB"hFE/2
;; +1.0
V
I I0 III
+2.0
I-
~
- 550 c' to 25°C
w
./
....-
250C to 1~OoC
"ave FOR VCElsat)
u
u
'3E:
\
2.0
3.0
MJE 200 NPN
MJE210 PNP
(SILICON)
COMPLEMENTARY SILICON POWER
PLASTIC TRANSISTORS
5 AMPERE
designed for low voltage, low'power, high·gain audio amplifier
applications.
•
Collector· Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
•
High DC Current Gain -
•
Low Collector· Emitter Saturation Voltage VCE(sat) ~ 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
•
High Current·Gain - Bandwidth Product -fT = 65 MHz (Min) @ IC = 100 mAdc
o Annular
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS
15 WATTS
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 5.0 Adc
Construction for Low Leakage - ICBO =100 nAdc@RatedVCB
MAXIMUM RATINGS
Rating
Unit
Symbol
Value
VC8
40
Vdc
VCEO
25
Vdc
VE8
8.0
Vdc
IC
5.0
10
Adc
Base Current
18
1.0
Adc
Total Power Dissipatio~ @ Tc. = 25°C
PD
15
0.12
Watts
W/oC
PD
1.5
0.012
Watts
W/oC
TJ,T stg
-65to+150
°c
Collector-Base Voltage
Collector-EmItter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak
Derate above 2SoC
Total Power Dissipation @ T A
Derate above 2SoC
=
2SoC
Operatmg and Storage Junction
Temperature Range
K
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(}JC
8.34
°C/W
Thermal Resistance. Junction to Ambient
°JA
83.4
°C/W
FIGURE 1 - POWER DERATING
6
1
r---2
DIM
A
B
C
i"..
1
.........
H
J
i"..
K
"-
0
40
60
o
F
G
"'-
0
0
20
STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
10.80
7.49
2.41
0.51
2.92
2.31
2.16
0.38
15.37
0.425
0.295
0.095
0.020
0.115
0.091
0.085
0.015
0.605
M
'" "'"'
100
110
80
T, TEMPERATURE (DC)
140
0
Q
R
S
U
0
160
4-539
V
11.05
7.75
2.67
0.66
3.18
2.46
2.41
0.64
16.64
3D TYP
3.76
1.14
0.64
3.68
1.02
4.01
1.40
0.89
3.94
0.435
0.305
0.105
0.026
0.125
0.097
0.095
0.025
0.655
3D TYP
0.148
0.045
0.025
0.145
0.040
CASE 77·03
TO·126
0.158
0.055
0.035
0.155
MJE200, NPN MJE210 PNP
ELECTRICAL CHARACTERISTICS (TC
I
= 25°C unless otherwise noted)
I
Characteristic
Symbol
Min
Max
Unit
VCEOlsus)
25
-
Vde
-
100
100
nAde
/lAde
-
100
70
45
10
-
OFF CHARACTERISTICS
COllector-Emitter Sustaining Voltage (1)
(lC = 10 mAde, IB = 0)
Collector Cutoff Current
IVCB = 40 Vde, IE = 0)
IVCB = 40 Vde, IE = 0, TJ
ICBO
= 125°C)
Emitter Cutoff Current
(VBE = B.O Vde, IC = Ol
•
nAde
lEBO
ON CHARACTERISTICS
DC Current Gain (1)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 2.0 Ade, VCE = 1.0 Vde)
(lC = 5.0 Ade, VCE = 2.0 Vde)
-
hFE
Collector·Emitter Saturation Voltage (1)
(I C = 500 mAde, I B = 50 mAde!
(lC = 2.0 Ade, I B = 200 mAde)
IIc = 5.0 Ade, I B = 1.0 Ade)
VCElsat)
Base-Emitter Saturation Voltage (1)
IIc = 5.0 Ade, IB = 1.0 Ade)
Base·Emitter On Voltage (1)
(lc = 2.0 Ade, VCE = 1.0 Vde
180
Vde
-
0.3
0.75
1.8
VBElsat)
-
2.5
Vde
VBElon)
-
1.6
Vde
fT
65
-
MHz
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 100 mAde, VCE = 10 Vde, f test
= 10 MHz)
Output Capacitance
(VCB
= 10 Vde,
IE
= 0, f = 0.1
(1) Pulse test: Pulse Width
(2) IT = hlel . Itest
I
pF
Cob
MHz)
MJE200
MJE210
BO
120
~
-
= 300 IlS, Duty Cycle'" 2.0%.
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 3 - TURN·ON TIME
300
200
100
SCOPE
g'
w
51
'"t=
~
I~~~: ~~ V _
TJ ~ 250C-
~tr
70
50
30
.......
20
"
I r• If::;: 10 os
DUTY CYCLE
'"
,...
l...........
i-1tdtnroffl; 5.0('
-4 V
1 0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
10
7.0
5.0
01 MUST BE FAST RECOVERY TYPE, '9
MBD5300 USED ABOVE IS ~100 mA
MSD6fOO USED BELOW IS 0·100 mA
3.0
005 0.07 0.1
FOR PNP TEST CIRCUIT, REVERSE ALL PO LARITIES
4-540
r- -:--
~
-""
.....
MJE200lNPNI
MJE210 IPNPI·
0.2
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT lAMP)
2.0
3.0
50
MJE200, NPN MJE210 PNP
FIGURE 4 - THERMAL RESPONSE
1.0
~ o
0.7
LU
<.)
:'i'
l;;
t1
0.5
0.5
0.3 f - - -0.2
~ i3 0.2 t--- -'01
""W
,,~
~~
o. (
~ ~O.O 7
~ ~O.05 ~
on
f-z
...~
~
IlJ!2t-
",-,
0.03
-
"""
-
mll-t---t--
i - b:::=~
p( k)
P
tl---
~r2
t--o(SiNGLE PULSE)
I
I I I III
=0 CURVES APPLY FOR POWER::
-PULSE TRAIN SHOWN
-
I
REA~TI~EIA','1
12--
0.Q1
OJC(I) = rll) OJC
OJC = B.34oC/W M,,-I--
-
DUTY CYCLE. 0 = q/12
TJltli TIC
I
pn) (JC(I)
~
0.02
I
0.0 1
0.02
""
I
0.05
0.1
0.5
0.2
1.0
I
5.0
2.0
I. TIME 1m,)
""
TT
I
50
20
10
100
200
FIGURE 5 -ACTIVE REGION SAFE OPERATING AREA
I. 0
a:-
...:'!.'"
~
'"
=>
'-'
'"
a
~
8
~
5001"
7. 0
5. 0
~1001'''=
1.Oms
......
......
3. 0
.....
'F~'
There are two limitations on the power handlmg ability of a
tranSistor
average Junction temperature and second breakdown.
Safe operating area curves indicate le.VeE limits of the tranSistor
r'\:
J iH\.. . . l'\."" 1'\
de
2.0
that must be observed for reliable operation,
TJ = 150°C
I. 01=-_- BONDING WIRE LIMITED
7
THERMALLY
L1MITED@TC=250C
O.
I(SINGLE PULSE)
o. 51:::
_ _ _ SECOND BREAKDOWN LIMITED
r= - --
CURVES APPLY BELlOW
RATED VCEO
3
2
Ie,
the tranSistor
must not be subjected to greater diSSipation than the curves mdlcate.
The data of Figure 5 IS based on T J(pkl = 150°C; T C IS variable
depending on conditions Second breakdown pulse limits are valid
for duty cycles ~o 10% provided T Jlpkl :s;; 150°C. T J(pk) may be
calculated from the data In Figure 4 At high case temperatures,
thermal limitations WIll reduce the power that can be handled to
values less than the Ilmnations Imposed by second breakdown
"-
oI
1.0
2.0
3.0
5.0
7.0
10
VCE. COLLECTOR·EMITTER VOL TAGE (VOLTS)
20
30
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN·OFF TIME
100 a
30 a
200
~
i=
I"'-
,
t":
10 0
0
0
0
0
=
VCC - 30 V'
ICIIB= 10
IBI = IB2 _
TJ = 25°C _
- ---- -
70 0
50 0
I,
=
..........
1'-.... "t-.
----
10
0.05 0.07
MJE200 (NPN)
MJE210 (PNP)
~
~
0
;:t
0
- r=t-
ri-...
:--.
oS
0
-
- - MJE200 (NPN)
T~
= 2'5 0C
-
......
r--.;;
-""
;3
~
t--
Cob
"
f'
I'-~ t-~
""MJrr)
II
0.1
w
'-'
z
<..)
<..)
0
~
z
=-~
;;:
10 0
80
'"t~
'"
1:l
~
<..)
0
"'- ~
II
0.05 0.07 0.1
~
1'\ ~.
--VCE=1.0V
- - - VCE = 2.0 V
20
\\
0.2 0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT lAMP)
i}= 150JC
200
;;:
60
0
JI . 1
2.0
3.0
~
f=:
2S!C
100
80
"--"
-- 1.'- ....,
-55°C
60
~,
"- ~~ , \"
- - VCE=1.0V
- - - VCE = 2.0 V
40
"\",
11 1
20
0.05 0.07 0.1
5.0
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT lAMP)
2.0
.\
3a
5.0
FIGURE 9 - "ON" VOLTAGE
2.0
2.0
ITl! !SOC
1.6
in
~
2: 1.2
w
'"
«
~
.-::::;:::;
VSElsat)@IC/ls-l0
0.8
>
,,;
~SE I@VCE = 1.~ V
0.4
-
o
~
.61:1'
0
0
~JI=12~oc
1. 6
--
Jc~!sat) @iCII~-lO
0.05 0.07 0.1
~
.... I:::?
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT lAMP)
1.2
w
«
'"
~
O. 8
>
,,;
./
.,..,
/.~
, O.4
;;:;;-
VSElsal)@ Iclis = 10
n
1
vlS
c £= :1.0
~
3.0
a
5.0
0.05 0.07
V
-'"
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT lAMP)
0.1
!j
./'
JcL!,ll@ Iclls =1 10
2.0
k:::: '?'
~
2.0
3.0
5.0
FIGURE 10 - TEMPERATURE COEFFICIENTS
u
+2.5
3;
+2.0
~
+1.5
+2.5
.IAJpUES Foh IC)18" h~E/31
~ +2.0
:>
.E
t-
U
~ +0.5
o
OVC for VCEI,,')
<..)
~
~
-0.5
·1.0
'" -1.5
~
-2.0
i
+1.5
~
t-
i::5 +1.0
./7
250C 10 1500C
.-"" j
/
-5~0~ !.I2~oC
./
/
L Ll
-2. 5
0.05 0.07 0.1
V
-I-t:t11 V
I I
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT lAMP)
~ +05
I
I
S
~
I
., I I
I FE/3
II
.lavc LVl~lsal)
II ....... V
"IT- f.;55 0C 10 25°C
-0.5
250C 10 150°C /
t-
~ -1.0
~ -1 5
5.0
I
2~OC 101150!? Lh
I
w
-550C to 250C
3.0
I
8
/'
2.0
+1.0
U
..,
250C 10 1500C
OVS for VSE
ffi
~~P~~IES FJ~ 1II1
0VS for VSE
';. -2. a
0;::,
-2. 5
0.05 007 0.1
I
0.2
0.3
0.5 0.7
-
V
./'V
~V
-
·55 OC10250C
1.0
2.0
IC, COLLECTOR CURRENT lAMP)
4-542
I
~
3a
5a
MJE205
(SILICON)
MEDIUM-POWER NPN SILICON TRANSISTOR
5 AMPERE
POWER TRANSISTOR
NPN SILICON
. . . for use as an output device in complementary audio amplifiers
up to 20·\iVatts music power per channel.
•
50 VOLTS
65 WATTS
- High DC Current Gain - hFE = 25·100@ IC = 2.0 A
-Thermopad High-Efficiency Compact Package
-Complementary to PNP MJE 105
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
VC8
VE8
IC
18
PDt
50
50
4.0
5.0
2.5
65
0.522
-55 to +150
Vdc
Collector· Emitter Voltage
Collector-Base Voltage
Emitter-Base Vortage
Collector Current
Base Current
Total Device Dissipation @TC 25 u C
Derate above 2SoC
Operating and Storage Junction
Temperature Range
TJ, T stg
Vdc
Vdc
Adc
Adc
Watts
W/oC
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
tSafe Area Curves are Indicated by FLgure 1. Both limits are applicable and must be observed.
STYLE 2:
PIN 1. EMITTER
2. CO LLECTO R
3. BASE
ElECTR ICAl CHARACTERISTICS (TC
I
Characteristic
I
=
25°C unless otherwise noted I
Symbol
I
Min
I
Max
Unit
OFF CHARACTERISTICS
Coliector·Emltter Breakdown Voltage:t
Vdc
8VCEOf
IIc = 100 mAde, IB = 01
Collector Cutoff Current
(VC8 = 50 Vdc, IE = 0)
ICBO
(VCB = 50 Vdc, IE = 0, TC= 150°C)
EmJtter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
lEBO
50
-
.-
0.1
2.0
-
1.0
25
100
-
1.2
mAd,c
mAde
ON CHARACTERISTICS
DC Current Gain
IIc = 2.0 Adc, VCE = 2.0 Vdcl
Base-Emitter Voltage
IIc = 2.0 Adc, VCE = 2.0 Vdc)
-
hFE
Vdc
V8E
:j:Pulse Test: Pulse Wldth~300 J.l.S, Duty Cycle~2.0%.
4-543
MILLIMETERS
DIM MIN
MAX
A IB.13 lB.38
B
12.57 12.83
e 3.18 3.43
D
1.09 1.24
F
3.51 3.76
G
4.22 ase
H
2.67 2.92
J
0.813 0.864
K 15.11 lB.38
90 TYP
M
Q
4.70 4.95
1.91 2.16
R
U
B.22 6.48
V
2.03
INCHES
MIN MAX
0.B35 0.B45
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSC
0.105 0.115
0.032 0.034
0.595 0.645
9° TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080
CASE 90-05
TO·127
MJE205
FIGURE 1 - ACTIVE REGION 'SAFE
OPERATING AREA
0
==::t:=
7. O~TJ = lS00 C
-
ii! 5.Ot--- --,....- r- 1- -
.
~ 3. 0
~ 2.0
,\
cr
1\ \
a 1.01==------ THERMAL LIMIT @Tc= 25 C
0
~ O. 71==-
-
The data-of Figure 1 IS based on TJlpk) = lS00C; TC IS vanable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) ~150oC. At high case
temperatures. thermal IIml.tatlons will reduce the power that can be
handled to values less than the limitations Imposed by second
breakdown.
BONOING WIRE LIMIT
SECONO BREAKOOWN LIMIT
5
de
8 o. 3
I.l
!:2 o. 2
-.J
O. 1
1.0
•
There are two limitations on the power handlmg ability of a
transistor; average junction temperature and second breakdown.
Safe operating area curves indicate Ie . VeE limits of the tranSistor
that must be observed for reliable operation; i.e., the tranSistor must
not be subjected to greater diSSipation than the curves indicate.
...., ~
... "~.Om'
....
~. o.
Note 1:
100.,
2.0
5.0
3.0
7.0
10
50
30
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 2 - "ON" VOLTAGES
2 0 ,-----r---r-r-rrn-n-,.-,--,--,r-r-rrrrr--lr-r---r-r-1
FIGURE 3 - DC CURRENT GAIN
lli
5.0
18r---~~-+~tTH+--+-+--r-r++i+Tr~-+--+-~
TJ = 25 0 C
1.&
~ 1.4
o
1.2
~
f--+-++-l-H-thf--+-+-+-H+tttt-H-hhi
/.
~
~
>
0.8
0.&
0.02 0.03 005
0.2 0.3
0.5
1.0
~
0.3
'-'
0.2
a
I I II ...... f/
0.1
0
2.0 3.0
I"-,.
-55 0
W
0.1
0.01
5.0
0.02 0.03
0.05
0.1
..
50
0
z
40
iii
30
"-
~
" "- "-
~
;::
;t
0
cr
~ 20
...
...ci
0.2 0.3
0.5 0.7 1.0
, IC. COLLECTOR CURRENT lAMPS)
;;;
I:
"
~
~
FIGURE 4 - POWER DERATING
&0
t'o..'
J
\
IC. COLLECTOR CURRENT lAMPS)
&5
........, I'
25 0 C
0.5
15
cr
O.~ ~~~~~V~C~E(sa~t~)@~I~C/~IB~=~I~O±~~:~-ttT~t!Ilrlln!~1~t=J~O
0.01
;-
VCE" 2.0 V
1500 C
;-i--"'"
'"
....
0.41-_+--t--+++i+ft--t-_VBt-E_@-tV_C+E-t-_2·rOHv+t------j--..l/£.-r-H
II
1.0
TJ
~
<1 0.7
~
VBE(sat)@ICIlB = 10
~
z
~ 1.0 1--+--t-+1-H-t+r-+-+-+-+-++++++r-::;-","""V'7''+---t-I
o
«
~
2.0
0
r----+-t-~_+t_ti+__t_t-+_+_H_tt_tt__j_jl-,
./"'I7'H
2
3.0
::l
'-
"" '-
0
'-
10
25
50
75
100
125
TC. CASE TEMPERATURE (OCI
4-544
,
"
150
175
2.0 3.0 4.0
NPN
MJE240 thru MJE244
PNP
MJE250 thru MJE254
COMPLEMENTARY SILICON POWER
PLASTIC TRANSISTORS
4AMPERE
· .. designed for low power audio amplifier and low·current, high·
speed switching applications.
•
High Collector-Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - MJE240/2, MJE250/2
= 100 Vdc (Min) - MJE243/4, MJE253/4
•
High DC Current Gain @ IC = 200 mAdc
hFE = 40-200 - MJE240, MJE250
= 40-120 - MJE241,243, MJE251,253
= 25 (Min) - MJE242,44, MJE252,54
•
Low Collector· Emitter Saturation VoltageVCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
•
High Current Gain Bandwidth ProductfT = 40 MHz (Min) @ IC = 100 mAdc
•
Annular Construction for Low' Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
POWER TRANSISTORS
COMPLEMENTARY SILICON
80,100 VOL TS
15 WATTS
•
MAXIMUM RATINGS
SYmbol
MJE240
MJE241
MJE242
MJE250
MJE251
MJE252
MJE243
MJE244
MJE253
MJEZ54
Unit
V~EO
80
100
Vd,
Collector-Base Voltage
VCB
80
100
Vd,
Emitter-Base Voltage
VEB
7.0
Vd,
lC
4.0
8.0
Ad,
Collector-Emitter Voltage
Collector Current - Continuous
Peak.
Base Current
Total Power Dissipatlon@Tc
Derate above 2S0C
25°C
Total Power DlulPation @TA = 2S0C
Deratll above 25°C
Operating and Storage Junction
Temperature Range
'B .
1.0
Ad,
PO.
IS
0.12
wIDe
Po
I.S
0.012
TJ,Tstg
-65 to +150
Watts
Watts
wIDe
°c
THERMAL CHARACTERISTICS
Thermal
".stance. Junction to ase
eslstance, unction to Ambient
STYLE 6
PIN I CATHODE
2. GATE
3. ANODE
FIGURE 1 - POWER DERATING
6
1.6
r~
...... t'-".
2
c
""
0
1.2
~
r--.,
c
Q8.
r--..
""
0
40
60
ill ....
~>
<5
z
0.4
r--.,
0
20
~
120
80
100
T. TEMPERATURE ('C)
. . . r--..
140
'iil
>
'~
0
160
4-545
MILLIMETERS
DIM MIN MAX
A 1 80 11.05
B
7.49
115
C
241
2.61
o 0.51 0.66
F
G
H
J
K
M
Q
R
S
U
V
2.92
3.18
2.46
2A1
0.64
16.64
30 TVP
3.76
4.01
1.14
1.40
0.64
0.B9
36B 3.94
1.02
2.31
1.27
0.38
15.11
CASE 77·04
TO·126
MJE240 thru MJE244, NPN,
MJE250 thru MJE254, PNP
ELECTRICAL CHARACTERISTICS ITC = 25°C unl... otherwi .. noted)
Symbol
Min
Max
80
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
VCEOI.us)
MJE240,MJE241,MJE242,
MJE250,MJE251,MJE252 .
IIc = 10 mAde, IS = 0)
~~~~:~:~~g~:
Collector Cutoff Current
IVcs = 80 Vde, IE • 0)
,IVCS = 100 Vde, IE = 0)
IVCE = 80 Vde, IE
=0, TC = 125o C)
IVCE = 100 Vde, IE = 0, TC = 1250 C)
•
100
ICSO
MJE240,MJE241,MJE242,
MJE250,MJE251,MJE252
MJE243,MJE244,
MJE253,MJE254,
MJE 240,MJE 241,MJE242
MJE250,MJE251,MJE252,
MJE243,MJE244
MJE253,MJE254
Emitter Cutoff Current
IVSE = 7.0 Vde, IC
0.1
-
0.1
-
0.1
-
0.1
-
0.1
40
200
40
120
I'Ade
mAde
",Adc
IESO
=0)
-
Vde
ON CHARACTERISTICS
DC Current Gain
IIc =200 mAde, VCE
IIc = 1.0 Ade, VCE
= 1.0 Vde)
IIC' 1.0 Ade, VCE
= 1.0 Vde)
IIc
=2.0 Ade, VCE =
MJE240,MJE250
MJE241,MJE251,
MJE243,MJE253
MJE242,MJE252,
MJE244,MJE254
MJE241,MJE251,
MJE243,MJE253
MJE242,MJE252
MJE244,MJE254
MJE240,MJE250
1.0 Vde)
II
f
f
Collector-Emitter Saturation Voltage
VCEls.,)
IIc = 500 mAde, IS = 50 mAde)
IIc - 1.0 Ade, IS = 100 mAde)
IIc
=2.0 Ade, IS -
All Type.
MJE241,MJE251,
MJE243,MJE253
MJE240, MJE250
200 mAde)
f
Base-Emitter Saturation Voltage
IIc
-
hFE
= 1.0 Vde)
-
20
-
10
-
15
-
-
0.3
0.6
-
0.8
-
1.8
-
1.5
40
-
-
50
70
Vde
Vde
VSElse,)
=2.0 Ade, IS = 200 mAde)
Base-Emitter On Voltage
25
VSElon)
IIc = 500 mAde, VCE • 1.0 Vde)
Vde
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 100 mAde, VCE = 10 Vde, ftest = 10 MHz)
IT
Output Capacitance
IVcs -10Vde,IE' 0, f= 0.1 MHz)
Cob
MJE240/MJE244
MJE250/MJE254
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
MHz
pF
FIGURE 3 - TURN-ON TIME
500
T~-250C- I-
Yee=30Y- Ile/IS"TO _
300
I-
200
RB
SCOPE
10 0
0
0
51
I'....
0
-4 V
CYCLE = 1.0%
RB.od RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
101=
01 MUST BE FAST RECOVERY TYPE, ego
MB05300 USED ABOVE IB ~100 mA
MSDSlo0 USED BELOW 'B =100 mA
1=:.-
7.Ot=:
5.0
0.04 O.OS
FOR PNPTEST CIRCUIT, REVERSE ALL POLARITIES
-
I"-
D
f r• tf:!::10 ns
~UTY
,,-
r-
......'I"" I '
~IIVBEfifl) =
r--...
C-
V
c-
'=m~=m::!~W
0.1
0.2
0.4
O.S
1.0
IC, COLLECTOR CURRENT lAMP)
4-546
ro
I,
2.0
4.0
MJE240 thru MJE244, NPN,
MJE250 thru MJE254, PNP
~IGURE
4 - THERMAL RESPONSE
1. 0
O. 7~ D- 0.5
w
'-'
z
O.5
B3
I-- 0.2
0.3
o. 2 - 1--0.1
~
~Q
«w
::!:::!
~~
~:i 0, 1
~:5 0.0 7
ffi~o.o 5 =
-
;;;
z
0.03 -
~
>-
"mJL
r-- ~ ...
-:::;;;;;.
;;;,...--
O.~
PI,kl
t
~r2
0.01
r ISlN~L1 PP~Sfl
0.02
'2
--
-
I
0.0 1
0.02
~
1 12
I 11111
0.1
0.5
0.2
1.0
2.0
I, TIME Im.1
-
I
10
5.0
i
~JC a~4~crl~ax-1-
=:0 CURVES APPL Y FOR POWER::;
-PULSE TRAIN SHOWN
READ TIME Altl
DUTY CYCLE. D ~ 1t/12
11111
0.05
-r-0JCItI~'JIIOJC
-r-
TJ t l ,-
I
I I
20
50
YIp['r
,OJCIII
-
1111
100
200
FIGURE 5 - 'ACTIVE-REGION SAFE OPERATING AREA
10
5.0
0:
~ 2.0
ffi
'"13a:
'"o
~
1.0
0.5
8
l'OT
-
S
........
t== =TJ ~ 150'C
..."
, ~t:
...
....
de
-
2.0
3.0
"\
I
MJ1Ei~0/MJEI242, MJE250/MJE252'
MJE2431MJE244, MJE2531MJE254
,
0.02
0.0 1
1.0
Safe operating area curves indicate le·VeE limits of the tranSistor
that must be observed for reliable operation; I e., the tranSistor
must not be subjected to greater diSSipation than the curves indicate.
Thedata of Figure 5 IS based on T Jlpkl = 1500 C; TC IS variable
depending on conditions Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) ~ 150°C. T J(pkl may be
calculated from the data In Figure 4 At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations Imposed by second breakdown.
5.0
m.
BONDING WIRE LIMITED
---THERMALLY LlMITEO@TC-25'C
0.2
(SINGLE PULSEI
--SECOND BREAKDOWN LIMITED
O.
1 ~ ~CURVES APPLY BELOW
0,05 f-- ==t=RATEO VCEO
~
There are two limitations on the power handling abllitv of a
. transistor
average Junction temperature and second breakdown .
t'\~
5.0 7.0
10
20
30
50
70
100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS!
FIGURE 6 - TURN-OFF TIME
2000
FIGURE 7 - CAPACITANCE
200
TJ = 25'C_ I-VCC ~ 30 V
Iclla = 10 ::::
IB1- IB2
~
1000
=t::::::
700
500
- --
r--
10 0
I.
~ 300
~ 200
>=
.......
-.... .......
100
0
......
.........
0
70
0
,
50
If
'==~j~~~~jU~ !~~/
30 f20
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
10
1.0
4.0
IC, COLLECTOR CURRENT lAMP)
,
I
-
T}= 25" C
Cib
I--
-
C,~ .......
1"-1....
+1--
- - -MJE2401M-JE244 INPN)
--MJE2501MJE254 (PNP)
2.0
3.0
5.0
7.0
II
10
20
VR, REVERSE VOLTAGE (VOLTSI
4-547
30
50
70 100
II
MJE240 thru MJE244, NPN,
MJE250 thru MJE254, PNP
NPN
PNP
I
MJE240 thru MJE244
MJE250 thru MJE254
FIGURE 8 - DC CURRENT GAIN
500
200
0;;;:::,
z
;;:
2St?
...
100
~
50
~
30
to
or=:
i:'i
a
200
--
3001- T = 1500 C
~~~:~:~~~
r'1::!
::... .~
~
~ 20
0
7.0
5. 0
0.04 0.06
•
-
70
50
to
::
a
-5S oC
~
.,
Q
~
~
I~
I
JCE =!1.0 V -
.111
-
TJ = IS0 0 C
100
2S oC
VCE = 2.0 V
-SSoc
-
"-
~~
.......
~...
"
10
7.0
5.0
3.0
0.1
0.2
0.4
0.6
1.0
2.0
0.04 0.06
4.0
2.0
0.1
0.2
IC. COLLECTOR CURRENT (AMP)
0.4
0.6
1.0
2.0
4.0
IC. COLLECTOR CURRENT (AMP!
FIGURE 9 - " N" VOL TAGES
).4
-I) ~~oc
g
1.4
Iff
1.2
1.0
~
~
1. 2
./
g
O.a VaE(..,!@llc/la= 10
/I
W
to
~
IV
O.6 VaE@VCE=1.0V
.#
Q
>
>~
o.4
.lnB,=~::
o.2
o
0.04 0.06
-+1"'11
I
-_VCE(sa,!
0.1
0.2
0.4
II
0.6
II
1.0
1. 0
Q
Q
~
-
~'
o. a
'"~
O.6
TJ!2S 0 C·
I II
I II
I II
VBE(sa')@ IcllB = 10
VBE@VCE-I.OV
~
~
"APPLIES FOR Iclla" hFE/3
+2.0
JJ~
0:= :::=pr
VCE(sa'!
2.0
o
4.0
0.04
0.06
2S oC '0 ISOOC_
"SVC FOR VCE(sati
8
-SSoc '0 2S oC
w
~ ·0.5
...
~ ·1.0
2~
...:> -1.5
-2.o SVB FOR VBE
'"
-2.
5~
0.04 0.06
0.1
..s
/
.....-::
/
II
J.k:::::: ::..--
/
0.2
0.4
0.6
1.0
2.0
4.0
~ +0. S
J-
0.4
0.6
-~5UC '0
c:c -0. 5
I..--'"
25"C
l
~
i
4.0
V
IC. COLLECTOR CURRENT (AMP)
f I IIII
JI II
0.04 0.06
0.1
0.2
0.4
0.6
1.0
IC. COLLECTOR CURRENT (AMP)
4-548
/
/
/
-1.0
~ I--'"
f-25 0 '0 ISOOJ
~ -1. S
syBtiRIW- c0
0
-55
C
'0
25
C
o
-2.
-2.S
2.0
/
V
HrTl
w
-5S oC '0 25 0 C
1.0
II
250 C '0 150 0 C .....-
"SVC FOR VCE(sa,)
8
v
I
v
II
+1. 5
~
.~ +1.0
II
0.2
f-- -
S.O
II
IC. COLLECTOR CURRENT (AMP)
+1.0
~
/
JI JI
0.1
:;;
U
$ 1-0.5
/
ICIIB = 10 ./..
O. 2
I
I
"
I
I
I
IJ 1-
Q
g +I.S
ffi
~
FIGURE 10 - TEMPERATURE COEFFICIENTS
+2.S
"APPLIES FOR IC/IB" hFE/3
~ +2.0
+2.5
>
--
>
>' O.4
IC. COLLECTOR CURRENT (AMP)·
~
~
2.0
.........v
4.0
MJE340 (SILICON)
0.5 AMPERE
POWER TRANSISTOR
PLASTIC MEDIUM POWER NPN
SILICON TRANSISTOR
NPN SILICON
300 VOLTS
20 WATTS
· .. useful for high·voltage general purpose applications.
•
• Suitable for Transformerless, Line·Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
for High Reliability
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Emitter-Base Voltage
VEB
3.0
Vdc
IC
500
mAde
PO.
20
0.16
Watts
Rating
Collector Current - Continuous
Total Power Dissipation @TC = 2SoC
Derate above 25°C
-65 to
TJ, T stg
Operating and Storage Junction
W/oC
~150
°c
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
STYlE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
I
Characteristic
I
Symbol
I
Min
I
Max
I
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IIc
= 1.0 mAde,
IB
= 01
Collector Cutoff Current
(VCR
= 300 Vde,
IF
= 01
Emitter Cutoff Current
(VEB
= 3.0 Vde, IC ~ 01
VCEOlsusl
300
-
Vde
ICBO
-
100
/lAde
lEBO
-
100
/lAde
MILLIMETERS
INCHES
DIM MIN MAX
MIN MAX
A 10.80 11.05 0.425 0.435
7.49
7.75 0.295 0.305
B
2.41
2.67 0.095 0.105
C
0.51
0.66 0.020 0.026
0
2.92
3.18 0.115 0.125
F
2.46 0.091 0.097
2.31
G
1.27
2.41 0.050 0.095
H
0.64 0.D15 0.025
J
0.38
0.595 0.655
16.64
K 15.11
30 TYP
3DTYP
M
Q
4.01 0.148 0.158
3.76
1.14
1.40 0.045 0.055
R
0.89 0.025 0.035
S
0.64
3.94 0.145 0.155
U
3.68
0.040
V
1.02
-
ON CHARACTERISTICS
CASE 77·04
TO·126
DC Current Gain
IIC = 50 mAde, VCE = 10 Vdel
4-549
,
MJE340
FIGURE 1 - POWER TEMPERATURE DERATING
FIGURE 2- "ON" VOLTAGES
32
~
28
,
~ 20
iii~
16
'"
2
O.B
r-...
~
........
'"
w
r--....
•
:>
~
40
/
L
V ./
'"
>
4.0
20
I
VaE@VCE=10V
0.6
'" 0.4
«
':;
MJE3~
o
~/,-i
1/
2:
Ii! 8.0
~
o
IL
11
~BJ (Sat) @ ~C~I~ = 10
1 L'IiTi
.TJ=250 C
~ 24
'"~
~
1.0
...........
V
......
1~laT
i'...
140
120
80
100
60
TC. CASE TEMPERATURE (DC)
Iclia = 10
VCE(..,)
0.2
160
30
20
10
50
100
200
500
300
IC. COLLECTOR CURRENT (mA)
ACTIVE-REGION SAFE OPERATING AREA
FIGURE 3 - MJE340
1.0
!
0.5
ill
0.3
~
0.2
0-
a:
.
101"~
...
TJ = 150·
Jlt~
~
a:
:3
ts::: t-
:'1.
co
~ o.
500".
I
SECONO BREAKDOWN LIMIT
- BONDING WIRE LIMIT
THERMAL lIMITlHC' 25 0 C
(SINGLE PULSE)
-
0.05
'\
J} 0.03 - - - - -
"-
0.02
"-
II
0.0 I
10
20
50
30
100
1\
300
200
VCE. COLLECTOR EMITIERVOLTAGE (VOLTS)
There are two limitations on the power' handling abifity of a transistor: average junctio'n temperature and second breakdown. Safe operating
area curves indicate le·VeE limits of the tr~nsistor that must be observed for reliable operation; i.e., the transistor must not be subjected
to greater pissipation than the curves indicate.
.
The data of Figure 3 is based on TJ(pk) = 1500 C; TC is variable depending on conditions. Second breakdown pulse limits are valid
for duty cvcles to 10% provided TJ(pk) ~ 1500C. At high case temperatures. thermal limitations will reduce the power that can be handled to
values I ... Ulan the.lirnitations imposed bV second breakdown.
FIGURE 4 - DC CURRENT GAIN
300
200
.-
TJ=\500J
z
;;:
'"
0-
ffi
a:
'"
:::>
co
.1
100
- - -+100 oC
70
50
'"u:;
~
I
~
.
30
20
I---
--
--~
~
+250C
~
co
- l:::_-:t:-
~-
---...
-
..;.. I-" P"""
-55 0 C
~ ~~
--
VCE=10V
-
~
.'~
-:..::
:..
-
r-..
~
.:\.-;~-"-
-",;.
\'~ ~
~
~
2.0
3.0
5.0
7.0
10
20
30
IC. COLLECTOR CURRENT (mAde)
4-550
50
70
100
200
r-t--
~....-;:
",
~
~
\
\
10
1.0
VCE=2.0V
300
1\. . .
500
IJE341
(SILICON)
MJE344
0.5 AMPERE
POWER TRANSISTORS
PLASTIC NPN SILICON
MEDIUM-POWER TRANSISTORS
NPN SILICON
150-200 VOLTS
20 WATTS
... useful for medium voltage applications requiring high fT such as
converters and extended range amplifiers.
II
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
MJE341
MJE344
Unit
VCEO
VCB
150
200
Vdc
175
200
Vdc
Vdc
VEB
IC
3.0
5.0
-500-
mAde
Base Current
IS
_250_
mAde
Total Power Dissipation @TC=2SoC
Derate above 2SoC
Operating and Storage Junction
Temperature Range
Po
20
0.16
_ - 6 5 to +150 _
Watts
W/oC
Emitter-Base Voltage
Collector Current - Continuous
TJ.T stg
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
OJC
6.25
°C/W
FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA
1.0
SOO"'r-
Q5
(.11)
"\
2
1
TJ • 150°C
\.1.0 ..
(.11)
--- --
r\
SECOND BREAKDIlI\N LIMIT
BONDING IIlRE LIMIT
THERMAL UMlTIIHC· 25'C
de
MILLIMETERS
MIN
MAX
A 10.80 11.05
B
7.49
7.75
2.41
2.67
C
0.66
0
0.51
2.92
3.18
F
2.31
2.46
G
2.41
H
2.16
0.64
J
0.38
K 15.37 16.64
30 TYP
M
n 3.76 4.01
1.40
R
1.14
S
0.64
0.89
3.94
U
3.68
V
1.02
DIM
I'..
'\
[02
0.0 I
10
20
30
40
100
200
JIll
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling abilitv of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.B., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figur. 1 is based on TJ(pkl = 1600 C; TC is
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pkl ~ 1500 C. At
high case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by
second breakdown.
4-551
INCHES
MIN
MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.085 0.095
0.015 0.025
0.605 0.655
30 TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
CASE 77'()3
TO-126
MJE341, MJE344
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Unit
Min
Max
150
200
-
-
1.0
-
1.0
-
0.3
-
0.1
20
-
25
30
200
300
20
-
-
1.0
2.3
VBE(on)
-
1.0
Vde
IT
15
-
MHz
Cob
-
15
pF
hfe
25
-
-
Symbol
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc = 1.0 mAde, IB = 0)
Collector Cutoff Current
(VCE = 150 Vde, IB = 0)
(VCE
= 200 Vde,
MJE341
MJE344
Collector Cutoff Current
(VCB = 175 Vde, IE = 0)
(VCB
•
MJE341
MJE344
= 200 Vde, IE = 0)
MJE341
= 5.0 Vde,
MJE344
(VEB
mAdit
ICBO
Emitter Cutoff Cu rrent
(VEB = 3.0 Vde, IC = 0)
mAde
ICED
= 0)
IB
Vde
VCEO(sus)
MJE341
MJE344
0.1
mAde
lEBO
IC = 0)
0.1
-ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE
(lC
= 50 mAde, VCE
(lC
= 150 mAde, VCE = 10 Vdc)
MJE341
MJE341
MJE344
MJE341
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 5.0 mAde)
IIC
-
hFE
= 10 Vde)
= 10 Vde)
Vde
VCE(satl
MJE344
MJE341 '
= 150 mAde, IB = 15 mAde)
Base-Emitter On Voltaga
IIc = 50 mAde, VCE = 10 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
IIC = 50 mAde, VCE = 25 Vde, f
Output Capacitance
(VCB = 20 Vde, IE
= 10 MHz)
= 0, f = 100 kHz)
Small·Signal Current Gain
IIC = 50 mAde, VCE = 10 Vde, f
= 1.0 kHz)
FIGURE 2 - DC CURRENT GAIN
300
VCE', 10V
200
TJ
;;: 100
...'"
70
'"
50
..,'"
~
:>
30
20
--- VCE' 2.0V
=+T500C
~
z
ffi
FIGURE 3 - "ON" VOLTAGES
1.0
...
'
~
+250C
....
- r\'
-55°C _
~
,
2.0 3.0
5.0 7.0 10
20
30
50 70 100
0.6
VeE @I VCE ' 10V
\
0.4
r-- VCE(sat)Ic/la '
o
200 300 500
10
lC, COLLECTOR CURRENT (mA)
1/
-
....
10
V ./
,.....~
Iclle = 5.0
I I
I
20
30
50
/
~
TJ = +25 0C_
I I
TOO
>do:
L
/
IC, COLLECTOR CU'RRENT (mA)
4-552
..".
T l.H-tt-::::::
'rt
I
0.2
~
10
1.0
.
..,..
~
'"
'"""
~
'">
~
w
O.S
j llJ
.L 1.- 1, I ( ( (
VSE(satl@lIClie' TO
200
300
I
500
MJE350
(SILICON)
PLASTIC MEDIUM POWER PNP
SILICON TRANSISTOR
· .. designed for use in line·operated applications such as low power,
line·operated series pass and switching regulators requiring PNP
capability.
•
High Collector-Emitter Sustaining Voltage VCEO(sus) = 300 Vdc@ IC = 1.0 mAde
•
Excellent DC Current Gain hFE = 30·240 @ IC = 50 mAdc
•
Plastic Thermopad Package'
Q,5AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
II
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation
@
Symbol
Value
Unit
VCEO
300
Vde
VEe
IC
3.0
Vde
500
mAde
20
0.16
W/oC
Po
T C == 25°C
Derate above 2SoC
TJ,T s1g
Operating and Storage Junction
Watts
-65 to +150
DC
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,Junction to Case
I
ELECTRICAL CHARACTERISTICS (TC
Cha~acteristic
I
=
25°C unless otherwise noted)
Symbol
I
Min
I
DIM
Max
Unit
300
-
Vde
ICSO
-
100
~Ade
G
H
IESO
-
100
!LAde
K
M
A
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IIc
= 1.0 mAde, IS = 0)
Collector Cu'toft Current
VCEO(sus)
(Vce = 300 Vde, IE = 01
Emitter Cutoff Current
(VEe = 3.0 Vde, IC = 0)
Q
R
ON CHARACTERISTICS
v
DC Current Gain
IIC
= 50 mAde, VCE
= 10 Vde)
MILLIMETERS
MIN MAX
10.80 11.05
7.49
7.75
2.41
2.67
0.51
0.66
2.92
3.18
2.31
2.46
1.27
2.41
0.38
0.64
15.11 16.64
30 TYP
3.76
4.01
1.14
1.40
0.64
0.89
3.68
3.94
1.02
INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
3° TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
CASE 77·04
T0-126
4-553
MJE350
FIGURE 2 - "ON" VOL TAGES
FIGURE 1 - DC CURRENT GAIN
200
1. 0
TJ = ISO'C
M1J,c
l"""z
100
'"
ffi
70
;;:
}slc
-sS'C
a
"""" ."
VCE = 2.0 V
- - - VCC=10V
III
'~
~
200
300
~
8
E
O. 4
Icils =11O;f-
V
o. 2
/J...-'
VCEI"r)
S.O 7.0
500
ICiI)s - ~.o
~
>
10 0
de
",-1.0m
+0. 8
..§ +0. 4
20
30
SO 70 100
IC, COLLECTOR CURRENT ImA)
0
20
10
20
--
TJ = 150'C
SONDING WI RE LIMITED
THERMALLY LlMITED@TC=2S'C
IISEC?ND ~RE~KD~WIN \I~ITED
30
500
II +100 c to il500C
II II
+25 0 C to +100 oC ,
0
V
~
0
• SS'C " +2S'C'/
'\
II
I
I+~s'c rl +15:0'~ ~ ~
a
6
" ....."
200
50
70
100
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
300
• Applies for ICilS < hFE/4
2
I-- t--
200
'OVC for VCEI"r)
SOO~s
""-
10
FIGURE 4 - TEMPERATURE COEFFICIENTS
2
G
" "
I'\.
20 0
0
0
0
>
:>
~
-
0-
o
II
w
'"~
«
0
- -
'"'"
~
--
L.-
VI.--
..;;.-
VSE@VCE-lOV
?! o. 6
FIGURE 3 - ACTIVE·REGION SAFE OPERATING AREA
1000
70 0
1001'S
SO0
"f5
~ I-
VSEI"r)@ ICilS = 10
,,~
50 70 100
20
30
IC. COLLECTOR CURRENT ImA)
10
.E 300
I-III
0
~ ~ '\\
I II
10
S.O 7.0
"
.....
"
III
0
20
•
o. a
~
::l so
'"o
"""\
I'--
0
'"
300
-2. a
5.0
400
1 \
OV8 for V8E
c
I
I II
7.0
i
-~s~C "I +2s
Tnl
10
20
30
50
70
100
200
300
500
Ic, COLLECTOR CURRENT ImAi
FIGURE 5 - POWER DERATING
0
I
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must nat be subjected to greater dissipation than the curves indicate.
Tho data of Figure 3 is based on T J(pk) = 150°C; TC is variabl.
~
0-
"
6
«
~
z
0
>=
"'-
2
;::
~
C
depending on conditions. Second breakdown pulse limits are valid
for duty cyclos to 10% provided TJ(pk) .;;; 150°C. At high cas.
'"~
temperatures, thermal li~itations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
~
~
8. 0
"
I'-..
"- 1"-..
4. 0
0
4-554
"-
20
40
60
80
100
120
TC, CASE TEMPERATURE ('C)
" '"
140
160
MJE370
(SILICON)
PLASTIC MEDIUM-POWER PNP
SI LICON TRANSISTOR
3 AMPERE
POWER TRANSISTOR
· .. designed for use in general·purpose amplifiers and switching
circuits. Recommended for use in 5 to 10 Watt audio amplifiers.uti·
lizing complementary symmetry circuitry.
•
DC Current Gain - hFE = 25 (Min)
•
Complementary to NPN MJE520
@
PNP SILICON
30 VOLTS
25 WATTS
•
IC = 1.0 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vde
Collector-Base Voltage
VCB
30
Vde
EmitteraSase Voltage
VEB
4.0
Vde
IC
3.0
Ade
Coliector~Emitter
Voltage
Collector Current - Continuous
- Peak
7.0
Base Current - Continuous
IB
2.0
Ade
Total Power Dissipation@TC= 2SoC
Derate above 25°C
Po
25
0.2
Watts
W/oC
TJ, T stg
-65 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
Characteristic
Svmbol
I
Min
Max
30
-
Vde
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1 J VCEOlsus)
IIC
='100 mAde, IB = 0)
Collector-Ba.. Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
.100
"Ade
Emitter-Base Cutoff Current
lEBO
-
100
"Ade
(VEB
~
4.0 Vde, IC
s
0)
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 Ade, VCE
= 1.0 Vde)
MILLIMETERS
DIM MIN MAX
A 10.80 11.05
7.49
7.75
8
2.41
C
2.67
0
0.51
0.66
2.91
3.18
F
2.31
2.46
G
2.16
2.41
H
0.64
J
0.38
K 15.37 16.64
M
3' TYP
Q
3.76
4.01
1.14
1.40
R
S
0.64
0.89
U
3.68
3.94
V
1.02
INCHES
MIN MAX
0.415 0.435
0.195 0.305
0.095 0.105
0.010 0.026
0.115 0.115
•
0.148
0.045
0.025
0.145
0.040
CASE 77·03
TO-126
(1) Pulse Teet: Pulse Width S300p.s. Dutv Cvcle ~2.0".
4-555
0.095
0.025
0.655
P
0.158
0.055
0.035
0.155
-
MJE370
FIGURE 1 0
r-.--
~
ACTIVE-REGION SAFE OPERATING AREA
- .... - r--
I-
~
3.0
~
2. 0
a:
:::>
'-'
a:
...
....
must not be subjected to greater dissipation than the curves indicate.
...
dc'"
TJ = 1500C
I
1.0
:=
There are two limitations on the power handling ability of a
transistor: average junction temperatura and second breakdown.
Safa operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the trSlnsistor
1.0ms--
....
5.0ms
ii:' 5. 0
~ o. 5
o
~ O. 3 -
I
- -
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED'
-
THEiMAT LlIMITtDtlC,,50C
-
The data of Figure 1
.........
I
based on TJ(pk) ,. 150°C; TC is
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T J)pk) ~ 150°C. At
high case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by
second breakdown.
O. 2
I
O. 1
1.0
3.0
III
5.0
10
20
30
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
•
FIGURE 3 - "ON" VOLTAGE
FIGURE 2 - DC CURRENT GAIN
I. 5
1000
700
500
VeE
1.0 V
r-
I. 2
TJ = 25'C
IV
9
TJ=+150'C
I-::
6
30
O. 3
III
~II
'2.0 3.0 5.0
20 30 50
100
200 300 500
Ie, COLLECTOR CURRENT (mAl
10
V
I
YeEI ••• }@lell.-1O
III
10
IL
V,,@VeE =2.0V
55'C
20
10
V.E"d,@lc/l •
+25'C
0
0
0
2.0 3,0 5.0
10002000
10
20 30
50
,100
200 300 500
1000
2000
Ie. COLLECTOR CURRENT (mAl
FIGURE 4 - THERMAL RESPONSE
_ 1.0
!9_ O. 7
0 0.5
15.
0
~
0.2
O.3
li!
~ 0.2
i1i
"" o. I
! 0.07
-
-
0.1
....
0.05
0.01
~ 0.05 _
§ 0.03 .......
F"'"
IrLrL
~h~
t,
SINGLE PULSE
!i1
DUTY CYCLE, D I,ll,
~ 0.02
IIIIII
;g 0.0 I
0.01
8JC(t) = r(t)8JC
8JC = 5.0 CIW Max
D CURVES APPLY FOR'POWER
PULSE TRAIN SHOWN
READ TIME"AT q
TJ(pk) Tc=P(pk)8Jc(t)
i:::::="
I-
0.02 0,03
0.05
0.1
I II I IIIIII
0.2
0.3
0.5
1.0
2.0
3.0
5,0
I,TlMElmsl
4-556
10
I
20
30
50
100
200
300
500
1000
IJE311
4 AMPERE
PLASTIC MEDIUM-POWER PNP
SILICON TRANSISTORS
POWER TRANSISTORS
PNPSILICON
40 VOLTS
40 WATTS
. . . designed for use in general-purpose amplifier and switching
circuits. Recommended for use in 5 to 20 Watt audio amplifiers uti·
lizing complementary symmetry circuitry.
•
.. DC Current Gain - hFE = 40 (Min) @ IC = 1.0 Adc
o MJE371 is Complementary to NPN MJE521
MAXIMUM RATINGS
Symbol
Value
Unit
VCEO
40
Vdc
Collector-Base Voltage
VCB
40
Vdc
Emitter-Base Voltage
VEB
4.0
Vdc
IC
4.0
Adc
Rating
Collector-Emitter Voltage
Collector Current - Continuous
B.O
- Peak
Base Current - Continuous
Total Power Dissipation
Derate above 2So C
@
TC
= 25°C
Operating and Storage Junction
Temperature Range
IB
2.0
Adc
Po
40
320
Watts
mW/oC
TJ. Tstg
-65 to +150
°c
THI'RMAL CHA~ACTERISTICS
STYLE I
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Max
Characteristic
3.12
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS ITC = 250 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEOlsus)
40
-
Vdc
ICBO
-
100
I'Adc
lEBO
-
100
I'Adc
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
IIc = lOOmAdc.IB = 0)
Collector-Base Cutoff Current
IVCB
= 40 Vdc.
IE
= 0)
Emitter-Base Cutoff Current
IVEB
Q
U
ON CHARACTERISTICS
V
DC Current Gain (1)
30 TYP
M
R
S
= 4.0 Vdc. IC = 0)
IIc = 1.0 Adc. VCE
MILliMETERS
INCHES
DIM MIN MAX
MIN MAX
A 10.BO 11.05 0.425 0.435
7.49
7.75
B
I 0.3D5
2.41
2.67
C
I 0.105
D 0.51
0.66
1 0.026
2.92
3.18
F
1 0•125
2.31
2.46
G
1 0•097
1.27
2.41
H
1 0.095
0.64
J
0.38
1 0.025
K 15.11 16.64
~
3.76
1.14
0.64
3.68
1.02
4.01
1.40
0.89
3.94
-
CASE 77-114
= 1.0 Vdc)
TO·126
(1) Pulse Test: Pulse WidthS 300 Its Duty Cycle~ 2.0%.
4-557
~
1 0.158
1 0.055
1 0.035
1 0•155
L....::-
MJE371
FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
0
100",
0:
'" 5_ 0
5
.....
>--
~ 3.0
_
a
1.Oms
.....
....
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating aroa curves indicate Ie . Vee limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figura 1 I, balad on T J(pk) ... l50o e; TC I.
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) ~ l50 o e. At
high cess temperatures, thermal limitations will reduce the power
that can be handled to values Ie.. than the limitations imposed by
second breakdown.
5.0 ms
2.0
TJ = 150°C
o'" 1. 0
de""
r-== - Second Breakdown Limit
~ o. 5 J:::::=
1------Bonding Wire lImit
II
o
'"~
Thermal Limit@Tc-250C
0.3
o. 2
-I I
O. I
2.0
4.0
/I
S.O
8.0
10
20
so
40
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTSI
FIGURE 2 - DC CURRENT GAIN
CII
~
10
7.0
5.0
150°C
VCE - 1.0 Vde
~
2.0
z-
;;:
I ::~
>--
:5
i
0
I"-
-55°C
1.0
TJ'250C
I.S
~ 3.0
CJ
I I
TJ' 25 0e
f--r-
::l
'"~
FIGURE 3 - "ON" VOLTAGE
2.0
V.
1.2
~
w
'"
'"
:;
I:?
VaElsall@le/la= 10
o.a
0
VaElonl@VCE -1.0 V
>
0.3
~
0.2
III
0.4
III
I'"
VCElsat)@lclla- 10
o
O. 1
0.01
0.2 0.3 0.5
1.0
0.02 0.03 0.05
0.1
IC. COLLECTOR CURRENT IAMPI
2.0 3.0 4.0
0.005 0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
Ie. COLLECTOR CURRENT IAMPI
1.0
2.0 3.04.0
FIGURE 4 - THERMAL RESPONSE
~
1.0
0.7 t==0 - 0.5
0.5
~~
0.3
il
0.2
in'"
~
",-
>--w
~~
I--
=-
0.2
-
I-- -0.1
~ ~ 0.07 F ' 0.02
~~ 0.03
~ 0.02
I::::
--
~ -.".
0.1 I-- -0.05
~~ 0.0 51'""
w-'
,....
-
~
I-- -0.01
>--
0.0 1
0.01
OJclt1 = rill OJC
OJC = 3.12°CIW Max
'L
,
....1:::'
-
I
Single Pulse
PIPklfifi
0 CURVES APPLY FOR POWER
B ! J ; - t . SINGLE PULSE TRAIN SHOWN
12
PULSE REAOTIMEAT!J
OUTY CYCLE. 0 ·!J/12
I
0.02 0.03
I
0.05
I I I
0.1
0.2
0.3
0.5
1.0
I
2.0
3.0
I I I I'll
5.0
I. TIME OR PULSE WIDTH 1m,)
4-558
10
TJlpkl- TC = Plpkl OJCIII
L iLL I I Lilli
20
50
100
111
200
500
1000
MJE520 (SILICON)
3 AMPERE
POWER TRANSISTOR
PLASTIC MEDIUM-POWER NPN
SI LICON TRANSISTOR
NPN SILICON
30 VOLTS
· .. designed for use in general·purpose amplifier and switching
circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
• DC Current Gain - hFE = 25 (Min)
• Complementary to PNP MJE370
@
IC
25 WATTS
..
= 1.0l'.dc
MAXIMUM RATINGS
Symbol
Value
Unit
VCEO
30
Vdc
Collector-Base Voltage
Vca
30
Vdc
Emitter-Base Voltage
VEa
4.0
Vdc
IC
3.0
Adc
Rating
Collector-Emitter V.oltage
Collector Current - Continuous
- Peak
7.0
Base Current - Continuous
Total Power Dissipation @ T C
= 25°C
la
2.0
Adc
Po
25
0.2
W/oC
Derate above 25°C
TJ. Tstg
Operating and Storage Junction
Temperature Range
Watts
-65 to +150
°c
s
~H
K
1--0
L--lLJ
GJ:i
1:$1
THERMAL CHARACTERISTICS
Characteristic
DIM
Thermal Resistance, Junction to Case
A
B
C
D
F
ELECTRICAL CHARACTERISTICS ITC = 25c C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
G
H
J
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (11
VCEOlsus)
30
-
Vde
K
M
R
S
(lC = 100 mAde, la = 0)
COllector-Base Cutoff Current
Icao
-
100
I'Ade
IEaO
-
100
"Ade
U
(Vca = 30 Vde, IE = 0)
Emitter-Base Cutoff Current
(VEa = 4.0 Vdc, IC = 01
a
V
MILLIMETERS
MIN MAX
10.BO 11.05
1.49
1.15
2,41
2,61
0,51
0,66
2.92
3.18
2.46
2.31
2.41
2.16
0,38 0,64
15.31 16.64
30 TYP
3.16 4,01
\.14
1.40
0.89
0.64
3.6B
3.94
1.02
-
STYLE 1
PIN I. EMITTER
2, COLLECTOR
3, BASE
INCHES
MIN
~
~
0,305
10,105
10,026
0. 125
10.\191
10,\195
10.025
1
1
~
P
0,148
0.045
0.025
0.145
0.040
ON CHARACTERISTICS
DC Current Gain (11
(lc = 1.0 Ade, VCE
= 1.0 Vdcl
,r
CASE 77-03
TO-I26
(1) Pulse Test: Pulse Width "5: 300 ,",5, Duty Cycle S:2.0%.
4-559
0.158
0,055
0.035
0,155
-
MJE520
FIGURE 1 ACTIVE·REGION SAFE OPERATING AREA
0
~
~
~
Iz
~
r - 1-- t-I--
3.0
TJ = 150DC
o
"I
1.0
t;
j
8
~
•
- -
0.5
0.3
0.2
-
The data of Figure 1
..... -
...
de
1
""""
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY lIMITED@TC= 25 DC
based on TJlpk)
=
1500 C; Te is
variable depending on conditions. Second breakdown pulse limits
ara valid for duty cycles to 10% provided (T Jpk) ~ 150°C. At
high case temperatures. thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of a
,
...
2.0
'"
a:
I.omsS.Dms~-
:>
'-'
I - I-- -
5.0
transistor:
average junction temperature and second breakdown.
Safe operating area curves indicate Ie . VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
T T
O•I
1.0
2.0
3.0
5.0
10
3D
20
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE.2_- DC CURRENT GAIN
FIGURE 3 - "ON" VOLTAGE
..
..
100 0
700
50 0
1.5
TIT
Ve.
I 11.1
~ 300
l-
~ 200
~
1.2
I.OV
~
...
r-...
TJ = 150'C
i-
100
0
0
~
.,
25'C
TJ = 25'C
~
0.9
~
..
~ 0.6
V,,@Ve•
55'C
0
~
10
V"I"'I@le/ l,
t;
2.0V
17
I I II
0.3
0
10
Z.O 3.0 5.0
Ve. 1"'I@lell, = 10
II
10
20 30
50
100
200 300 500
a
1000 2000
2.0 3.0 5.0
10
Ie, COLLECTOR CURRENT ImA)
20 30
50
100
200 300 500
1000 2000
Ie, COLLECTOR CURRENT ImA)
FIGURE 4 - THERMAL RESPONSE
ffi
1.0
::; 0.7
~ 5.0
N
0=0.5
......
0.2
o
~
~ 0.3
Z
~
~
0.2
'''--
0.1
;;! 0.0 7
~ 0.05
w
>:
I-
0.03
~
0.02
!;;
z
:i 0.01
';
"'"
--
O,QJ
--"
0.05
0.01
'1JLJL
Plp'l
V
~h~
I, .
DUTY CYCLE, 0 1, /1,
SINGLE PULSE
I III
0.02 0.03
0.05
6JCIt) .. rlt) 6JC
6JC = 5.0 DC/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
,REAOTIMEATq
TJlpk) TC = Plpk) 6JCltl
I-"
l.-
0.1
0.1
I 1.1
0.2
0.3
0.5
1.0
2.0
.11111
3.0 5.0
I,TIMElmsl
4-560
10
20
30
50
100
200
300
500
1000
PNP
MJE700 thru MJE103
NPN
MJE800 thru MJE803
4.0 AMPERE
. PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
... designed to replace discrete driver and output stages in complementary audio amplifier applications.
•
High DC Current Gai n hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
•
Monolithic Construction
•
Three Lead Design - Emitter-Base Resistors to Limit Leakage
Multiplication are Built in.
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60-80 VOLTS
40 WATTS
..
MAXIMUM RATINGS
Rating
Coliector·Emltter Voltage
Symbol
MJE700
MJE701
MJE800
MJE801
MJE702
MJE703
MJE802
MJE803
Unit
VCEO
60
80
Vdc
COllector-Base Voltage
VC8
60
80
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
4.0
Adc
Collector Current
Base Current
Total Power Dissipation @ T C
= 2SoC
IB
0.1
Adc
Po
40
0.32
Watts
W/oC
TJ. T stg
-55 to +150
Uc
Derate above 25°C
Operating and Storage Junction
Temperating Range
THERMAL CHARACTERISTICS
Characteristic
I
Thermal Resistance. Junction to
Ca~e
Symbol
I
Max
I
3.13
ROJC
Unit
STYLE 6
PIN 1. CATHODE
°C/W
1. GATE
3. ANODE
MILLIMETERS
DIM MIN
A 10.80
FIGURE 1 - POWER DERATING
40
5
i'S
f".-
30
",
S 20
F
.......
J
K
i'-..
i5
'"
10
""".
R
S
U
V
" ,
0.64
16.64
30 TYP
3.76
1.14
0.64
3.68
1.02
4.01
1.40
0.89
3.94
-
INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.085
0.015 0.025
0.595 0.655
3 TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
-
CASE 77-04
......
~
o
15
1.75
2.61
2.41
0.38
15.11
M
Q
11.05
0.66
3.18
2.46
G
H
~
~
~
7.49
0
z
o
~
-
8
C
MAX
50
75
100
Te. CASE TEMPERATURE lOCI
115
150
4-561
When mounting the device, torque not to
exceed 6".0 in.·lb.
If lead bending is required, use suitable
clamps or other supports between transistor
fase and point of bend.
MJE700 thru MJE703PNP/ MJE800 thru MJE803NPN
ELECTRICAL CHARACTERISTICS (TC; 25°C
I
unless otherwise noted)
Symbol
Characteristic
Min
Max
60
80
-
-
-
100
100
-
100
500
-
2.0
750
750
-
-
2.5
2.8
Unit
OFF CHARACTERISTICS
COllector-Emitter Breakdown Voltage III
(lC; 50 mAde, IB; 01
Collector Cutoff Current
(VCE ~ 60 Vdc, IB : 01
(VCE = 80 Vdc, IB : 01
= 100oC)
•
lEBO
= 0)
IC
~Ade
mAde
ICBO
EmItter Cutoff Current
= 5.0 Vde,
-
ICEO
MJE700, MJE701, MJE800, MJE801
M.IE702, MJE703, MJE802, MJE803
Coliector Cutoff Current
(VCB: Rated BVCEO, IE = 01
(VCB = Rated BVCEO, IE: 0, TC
(VBE
Vde
BVCEO
MJE700, MJE70l, MJEBOO, MJE801
MJE702, MJE703, MJE802, MJE803
~A
ON CHARACTERISTICS (II
DC Current Gain
-
hFE
MJE700, MJE702, MJEBOO, MJE802
MJE701, MJE703, MJEBOI, MJEB03
(lC: 1.5 Ade, VCE "3.0 Vdel
(lC: 2.0 Ade, VCE : 3.0 Vdel
. Collector·Emitter Saturation Voltage
MJE700, MJE702, MJE800, MJE802
MJE701. MJE703, MJEBOI, MJE803
(lc: 1.5Ade,IB: 30 mAde)
IIC=2.0Adc.IB:40mAdel
-~
=3.0 Vdel
-
MJE700, MJE702, MJE800, MJE802
MJE70l, MJE703, MJE80l, MJE803
= 3.0 Vdcl
Vele
Vde
VBE(onl
Base·Emitter On Voltage
IIc = 1.5 Ade, VeE
(I C =2.0 Adc, V CE
VCE(sat)
-
2.5
2.5
-
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lc = 1.5Ade. VCE = 3.0 Vde, f: 1.0 MHzl
(1)Pulse Test:
Pulse Width ~ 300 JJ.s, Duty Cyclo -::; 2.0%.
FIGURE 2 - DC SAFE OPERATING AREA
5~ 0
"-
3.0
'"
5
....
ia
'"
o
~
8
~
....
20
1.0
"-
-
-
0.7
BondingWireUrnit
Thermal Limit al TC '" 250C
Secondary Breakdown limit
O. 5
0.3
Tel~ 2~O~
O. 2
r,
There are two limitations on the power handling ability of a
transistor: average junction temperature and secondary breakdown.
Safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation; e.g., the transistor
must not bd subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by secondary breakdown.
1\
"III
O. 1
"-
~m~u~~~H
MJEJ02. J03.
MJE802.803
O.oJ
0.0 5
1.0
2.0
3.0
5.0
J.O
10
20
30
50
JO 100
VeE, eOLLEeTOR~EMITTER VOLTAGE (VOLTS)
FIGURE 3 - DARLINGTON CIRCUIT SCHEMATIC
PNP
MJEJOO
thru
MJEJ03
Collector
NPN
MJE800
-,
,----+.
thru
MJE803
I
B;lse
ColieclOr
r---------,
:
I
I
Base
Emitter
4-562
MJE1290 MJE 1291 PNP
MJE 1660 MJE 1661 NPN
(SILICON)
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
COMPLEMENTARY SILICON
MEDIUM-POWER TRANSISTORS
40·60 VOLTS
... designed for use in power amplifier and switching applications.
90 WATTS
o High Collector CurrentIC=15Adc
o High DC Current Gain hFE = 10 (Min) @ IC
= 15 Adc
MAXIMUM RATINGS
MJE1291
MJE1661
60
Unit
VCEO
MJE1290
MJE1660
40
Collector-Base Voltage
VCB
40
60
Vdc
Emltter~Base
. Symbol
Rating
Collector-Emitter Voltage
Vdc
VEB
5.0
Vdc
Collector Current-Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
PD
90
0.72
Watts
W/oC
TJ. T stg
-65'0+150
DC
Voltage
Total Power Dissipation
@
T C = 2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Range
r-.-
B--
1M-1·
'--~
12
---L
~I~VIH
THERMAL CHARACTERISTICS
Characteristics
M
t-
1.39
2. COLLECTOR
3. BASE
'.
FIGURE 1 - POWER TEMPERATURE OERATING CURVE
DIM
A
B
C
D
0
-'"
-'"
0
F
"-
.-"'.
0
G
H
J
K
-'"
0
"-
M
"-
0
Q
..
"-
-
r---
25
50
75
100
125
TC. CASE TEMPERATURE lOCI
R
U
"-
V
"0
1
L
. ~=-r C
0
,
+n-- 0
--li--J
--lGi=
R
STYLE 2:
:l.1 PIN 1. EMITTER
Max
Thermal Resistance, Junction to Case
l-f
F
--IUr~
MILLIMETERS
MIN
MAX
INCHES
MIN MAX
16.13 16.38
12.57 12.83
3.18 3.43
1.09 1.24
3.51 3.76
4.22 BSC
2.67 2.92
0.813 0.864
15.11 16.38
90 TVP
. 4.70 4.95
1.91
2.16
6.22 6.48
2.03
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSC
0.105 0.115
0.032 0.034
0.595 0.645
90 TVP
0.185 0.195
0.075 0.085
0.245 0.255
0.080
.CASE 90·05
TO-127
150
175
When mounting the device, torque not
to excet:d 8.0 in.-Ib.
If lead bending is required, use suitable
clamps or other supports between transistor case and point of bend.
4-563
MjEi29o, MoJE1291 PNP/MJE1660, MJE1661 NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
I
Symbol
Characteristic
Min
- Max
40
60
-
-
1.0
-
0.7
0.7
-
0.7
0.7
-
1.0
20
10
100
-
1.8
-
2.5
3.0
-
25
-
Unit
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage III
= 200 mAde, la = 0)
Vde
VCEO(sus)
(Ie
MJE1290, MJEI660
MJE1291, MJE1661
Collector Cutoff Current
(VCE = 30 Vde, la = 01
mAde
ICEO
Collector Cutoff Current
(VCE = 40 Vde, VaE = 0)
(VeE = 60 Vde, VaE = 0)
mAde
.ICES
MJE 1290, MJE 1660
MJE1291, MJE1661
Collector Cutoff Current
mAde
Icao
(Vca = 40 Vdi:, IE = 0)
(Vca = 60 Vde, IE = 0)
MJE1290, MJE1660
MJE1291, MJE1661
Emitter Cutoff Current
mAde
IEaO
(VaE = 5.0 Vde, IE = 01
ON CHARACTERISTICS
DC Current Gain 111
(IC = 5.0 Ade, VCE = 4.0 Vde)
(lC ='15 Ade, VCE = 4.0 Vde)
hFE
Collector-Emitter Saturation Voltage III
(lC = 15 Ade, la = 1.5 Ade)
VCE(satl
Base-Emitter on Voltage III
(lC = 15 Ade, VeE = 4.0 Vdcl
VBE(on)
--
Vde
Vde
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC = 1.0 Ade, VCE = 10 Vdc, f = 1.0 MHz)
fT
Small-Signal Current Gain
(lC = 1.0 Ade, VCE = 10 Vde, I = 1.0 kHz)
hfe
MHz
-
(11 Pulse Test: Pulse Width'S 300 Ils. Duty Cycle'S 2.0%.
FIGURE 2 - DC SAFE OPERATING AREA
100
l
50 =-iJ 150°C
---
20
~ 10
~ 5.0
- - - - Secondary Breakdown Limited
- - - - - Thermally Limited, TC =250C
'"a:
~::l0
-- -
--- -
2.0
Bonding Wire limited
1.0
8
~
-MJE1291
~ .-MJE1661
\ ~
0.5
MJE1290, MJE1660
O. 2
IIII
O. I
1.0
The Safe Operating Area Curves Indicate IC~VCE limits below
which the device will not enter secondary breakdown. Collector
load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To Insure operation
below the maximum T J. power·temperature derating must be observed for both steady state and pulse power conditions.
2.0
3.0
5.0 7.0
10
20
30
50
70 100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-564
MJE1909
4 W (CW) -27 MHz
NPN SILICON RF POWER TRANSISTOR
RF POWER
TRANSISTOR
· .. this device is designed for use in large signal R.F. output
amplifier stages in communications equipment operating to 50 MHz.
This device is specifically tested for use at 27 MHz in Citizen
Band equipment.
NPNSILICON
• Withstands Open and Short Circuit load in AM Operation
•
Specified 12 V. 27 M Hi Characteristics
Output Power = 4 W (CW)
Minimum Efficiency = 60% (CW)
•
MAXIMUM RATINGS
Rating
COllector-Emitter Voltage
IRBE
Symbol
Value
Unit
VCER
75
Vdc
Vdc
= 150 nl
Collector-Base Voltage
VCBO
75
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
3.0
Adc
PD
10
100
Watts
mW/oC
TJ. T stg
-55to+150
°c
Collector Current
Peak 111
Tatal Power Dissipation @ T C
50°C
Derate Above 50°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
111
P~lse Width .. 20 ms. Duty Cycle .. 50%
STYLE 1.
PIN 1 BASE
2. COLLECTOR
3. EMITIER
4. COLLECTOR
DIM
...1
J
Svmbol
I
Max
ROJC
I
10
I
I
Unit
°C/W
A
B
C
D
F
G
H
J
K
L
N
Q
R
5
T
U
CASE 221A·D2
TO·220AB
4-565
MJE1909
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
hFE
20
150
-
0.6.
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (1).
(lC' = 0.5 Adc, VCE ~ 10 V)
Collector-Emitter Saturation Voltage (1)
VCE(sat)
(lC = 1 Adc, IB = 0.1 Adc)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 150 rnA, VCE = 10 V, I = 100 MHz)
•
Output Capacitance
IT
100
-
MHz
Cob
-
70
pF
(VCB = 10 Vdc, IE =0, 1= 1.0 MHz)
FUNCTIONAL TESTS (Figure 1)
Output Power
4.0
Watts
60
%'
(VCC = 12 V, 1= 27 MHz, Pin = 0.2 W)
Collector Efficiency
(VCC = 12 V, I = 27 MHz, Pin = 0.2 W)
(1) Pulse Test: Pulse Width = 300 I'S, Duty Cycle':; 2%
FIGURE 1 - TEST CIRCUIT SCHEMATIC
&.--I"f"V-y-''-_-JLI\..__--l,,) Output
50
Lt
~~~t(Ot---21--~~--rv~~---'---4
RFC
C2
68 pF
30
n
C2. C3: ..... 110 pF Variable Capacitor
Cl. C4: ~ 75 pF Variable Capacitor
L 1: 0.15 to 0.22 ~H. Q "'" 5
L2: 0.46 IlH, Q ~ 5
4-566
n
Load
MJE2360T
MJE23611
NPN SILICON HIGH-VOLTAGE TRANSISTOR
Q.5AMPERE
POWER TRANSISTORS
NPN SILICON
· .. useful for general-purpose. high voltage applications requiring
high fT.
•
Collector-Emitter Sustaining Voltag'e VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc
•
DC Current Gain hFE = 40 (Min) @ IC = 100 mAdc - MJE2361T
III
Current-Gain-Bandwidth Product fT = 10 MHz (Typ) @ IC = 50 mAdc
350 VOLTS
30 WATTS
•
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector· Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Svmbol
Value
Unit
VeEO
VeB
VEB
Ie
350
18
0.25
Vdc
Vdc
Vdc
Adc
Adc
PD
30
0.24
Watts
TJ.T stg
-65 to +150
°e
Svmbol
Max
Unit
8JC
4.167
°e/w
Base Current
Total Power DISSipation
@
TC = 25°C
375
6.0
0.5
Derate above 2SoC
Operating and Storage Junction
III
,J~[~
jtu
w/oe
Temperature Range
T-JI
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
~
~
z
0
;::
:t
3.
EMITTE.R
4. COllECTOR
DIM
••
..........
25
20
'"iii!
~
.JI-~
2. COLLECTOR
30
15
~
-l~
35
ili
is
,.
JSECTAA
STYLE 1.
PIN 1. BASE
FIGURE 1 - POWER· TEMPERATURE DERATING CURVE
40
f-
K
..........
'" "'-.
10
H
J
K
L
•
•
0
R
"" '" "'-. r-....
5.0
o
C
0
F
G
~
o
20
40
60
80
100
120
140
T
U
160
V
NOTE.
1. DIM. L& H APPLIES
TO ALL LEADS.
MILLIMETERS
MIN MAX
15.11 15.15
9.65 10.29
4.06
4.82
0.64
0.89
3.61
3.73
2.41
2.61
2.79
3.30
0.36
0.b6
12.70 1411
1.14
1.21
4.83
5.33
'.54 3."
2.04
2.79
1.14
139
5.97
6.48
1.21
0.76
1,14
INCHES
MI. MAX
0.595 0.620
0.405
0.38
0.160 0.190
0.025 0.035
0.142 0.141
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0050
0.190 0.210
0.100 0.120
0.080 0.110
0 .. ' 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221 A.Q2
(TO·220 ASI
TC. CASE TEMPERATURE tDCI
4-567
MJE2360T, MJE2361T
ELECTRICAL CHARACTERISTICS (Te = 25 0 e unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltagell)
VCEO(,u,'
350
-
-
Vde
ICEO
-
-
0,25
mAde
ICEX
-
-
0.5
mAde
Collector Cutoff Current
(VCB ".375 Vde, IE " 0)
ICBO
-
-
0.1
mAde
Emitter Cutoff Current
lEBO
-
-
0.1
mAde
-
200
250
IIC = 2.5 mAde, IB = 01
Collector Cutoff Current
(VCE = 250Vde,IB = 01
Collector Cutoff Current
(VeE'" 375 Vde, VEB(olfl" 1.5 Vdel
•
(VBE " 5.0 Vde, IC " 0)
ON CHARACTERISTICS (11
DC Current Gain
-
hFE
IIc = 50 mAde, VCE = 10 Vde)
r;:
MJE2360T
MJE2361T
25
50
IIc = 100 mAde, VCE = 10 Vde)
MJE2360T
15
40
MJE2361T
Collector-Emitter Saturation Voltage
VCE(,.,)
-
-
-
1.5
Vde
1.0
Vde
MHz
(lC = 100 mAde, IB = 10 mAde)
Base-Emitter On Voltage
'vBE (onl
-
-
IT
-
10 .
-
Cob
-
20
-
IIc = 100 mAde, VCE = 10 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain- BandwIdth Product
IIc = 50 mAde, VCE = 10 Vde, I
=1 0
MHzl
Output Capacitance
(VCB
= 100 Vde,
(1 )Pulse Test
IE
pF
= 0, I = 100 kHz)
Pulse Width.s; 300 #ls, Duty Cycle ~ 20%.
FIGURE 2 - OC SAFE OPERATING AREA
1.0
;c
0.5
~ 0.3
I-
~ 0.2
B
'"ot;
j
- - - Secondary Breakdown limited
- - -:L Brnding Wire Limited
O. 1
1\
The Safe Operating Area Curves indicate Ie-VeE limits below
which the device will not enter secondary breakdown. Collector
load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic faIlure. To insure operation
below the ma)(imum T J. power-temperature derati~g must be observed for both steady state and pulse power conditions.
0.0 5
S 0.0 3 - T J -150°C
I I I
!2 0.0 2
0.0 1
1.0
2.0
5.0
I)
II
10
20
50
100
200
500 1000
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
4-568
NPN
MJE28@1 p MJE28@11f
PNP
MJE2901, MJE2901T
10 AMPERE
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
COMPLEMENTARY SILICON
POWER TRANSISTORS
... for use as an output device in complementary audio amplifiers
up to 35·Watts music power per channel.
60 VOLTS
75. 90 WATTS
Q
High DC Current Gain - hFE = 25·100@ IC = 3.0 A
o Choice of Packages - MJE2801, 2901 - TO·225AB (TO·127)
MJE280tT, 2901T - TO·220AB
MAXIMUM RATINGS
Symbol
Valuo
Unit
VCEO
60
Vde
Collector-Base Voltage
VCB
60
Vde
Emitter-Base Voltage
Rating'
Collector-Emitter Voltage
VEB
4.0
Vde
Collector Current
IC
10
Ade
Base Current
IB
5.0
Ade
PIN I er.4ITTER
2 COllECTOR
3 BASE
DIM
A
•
C
D
F
G
H
90
75
Operating and StOfEgB Junction
TJ. T,tg
J
K
M
0.72
0.6
W/oc
-5510 +150
°c
o
A
MJE2801
MJE2901
CASE 90·05
TO·225AB
ITO-1271
Temperature Aange
THERMAL CHARACTERISTICS
Cha.ractoristic
Symbol
Thermal ROliltonce, Junction to Cesa
°JC
~I- s c
I~'
rJ ~~T"
Unit
Ma.
°CIW
ELECTRICAL CHARACTERISTICS ITC
Characteristic
I
I
Min
I Max I
60
-
Coliector·Cutoff Current
IVCB
= 60 Vde, IE
IVCB = 60 Vde, IE = 0, TC = 150DcI
IVBE
-
0.1
-
2.0
-
1.0
hFE
(lC' 3.0 Ade, VCE • 2.0 Vdel
Base-Emitter Voltage
25
G
H
J
K
-
1.4
Pulso T ..t: Pulse Width ~300 Ils, Dutv Cycle <;;2.0%.
6Tradomark of Motorole Inc.
4-569
a
-
R
Vde
S
T
U
100
VBE
(lC = 3.0 Ade, VCE • 2.0 Vdel
(1)
•
l
N
ON CHARACTERISTICS
DC Current Gain
DIM MIN
A 1511
C
0
F
mAde
'EBO
= 4.0 Vde, IC =.01
MILLIMETERS
mAde
ICBO
= 01
Emitter Cutoff Current
Vde
BVCEO
lic = 200 mAde, IB = 01
H
-:J--R
1-,
Unit
OFF CHARACTERISTICS
Collector· Emitter Breakdown Voltage 11)
v,
J
J~-
= 25°C unless otherwISe notedl
Symbol
a
T
lu
I
1Sa'. ArOB Curl,lq$ ara indicated by F Igur. 1. Both limits are applicable and must beobservod.
I
r S-'_J
--1
A
1.39
1.67
MJE2801, 2901
MJE2801T,2901T
•
STYlE 2
Watts
Pot
Totol Power Oi .. lpation @ T C - 25°C
MJE2801,2901
MJE2B01T,2901T
Oorato obove 250 C
MJE2801, 2901
MJE2801T,2901T
\
965
.06
064
361
241
219
036
MAX
1515
10.29
089
373
261
330
056
1427
1.21
254
304
2.19
1.39
6.4B
121
II.
591
016
II.
0
0
'.2 0160
1210
114
483
20.
INCHES
MIN
059S
533
-
0025
0142
0095
OliO
0014
o SOD
0045
0190
DI
O.OBO
0045
0235
0030
0045
MAX
0620
0405
0.190
0035
0141
0105
0130
0022
0562
0050
0210
0.120
0.110
0055
0255
0050
-
CASE 221A.o2
TO·220AB
STYLE I
PIN I
2
J
4
BASE
COLLECTOR
EMITTER
COllECTOR
NOTE
101M L & H APPLIES
TO ALL LEADS
MJE2801T
MJE2901T
MJE2801/MJE2801T NPN, MJE2901/MJE2901T prJP
FIGURE 1 - ACTIVE REGION
SAFE OPERATING AREA
10
7.0
5.0
11III.olMJE2801
,.JE2901
13.0
' .. 1\
ico 2.0
co
a 1.0 ~-- 80NOING ~IR~ LIIM\A~
:
~
II
0.1
=-----
0.5
,
'.
MJE280IT~
I .1 MJE290IT
There are two limitations on the power handling abilitv of a
transistor: average junction temperature and second oreakdown.
Safe operating Brea curves indicate Ie . VeE limits of the transistor
that mu'st beobselVed for reliable operation; I.e., the transistor must
1M
\
\~,\
not be subjected to' greater dissipation than the curves indicate.
The data of Figure I is based on T Jlpk) = ISOoC; TC IS var;able
depending on conditions. Second breakdown pulse limits are valid
THERMALLY L1MIT@lTC= 2'J'
SECONDARY BREAKDOWN LI ITEO
for duty cvcles to 10% provided T Jlpk) .;;; ISOoC. At high case
temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed bV second
breakdown.
.
B 0.3
!} 0.2
O. I
1.0
2.0
3.0
5.0
7.0
10
20
3D
50 60
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTS)
FIGURE 2 - OC CURRENT GAIN
FIGURE 3 - POWER DERATING
90
500
~
100
~co
50
u
0
~
0
...
1'1
o
VCE = 2.OV
TJ"~C
200
z
L'-.
80
E
......
<
I---
ill
300
..-
it; 70
..........
:z
~~~C
0
;:: 60
~ 50
i"o...
~
MJE2BOIT .....
MJE290lT
i5 40
-55°C
"..
'"
~
......
Ii:
~
" ' MJE2BOI
MJE2901
3D
20
r-....",
-........: ~
~
~
..........
10
0
5.0
0.01
o
0.02
0.05
0.1
0.2
0.5
1.0
2.0
IC. COLLECTOR CURRENT lAMPS)
5.0
o
75
100
125
50
TC. CASE TEMPERATURE 10C}
25
10
150
175
FIGURE 4 - "ON" VOLTAGES
MJE2901/MJE2901T
MJE2B01/MJE2B01T
0
1.4
1.2
TJ' 25°C
TJ - 2SoC
6
J
-
1
VBElsaU IiIICIIB' 10
l---
::,.....-
2
VeEI .. t}@IC·IS·
6
VBE IiIVCE • 2.0 V
8
4
VSE@VCE·
1..1 JL
0.2
VCElsaU Ii!>lclle = 10
o
0.1
0.2
0.3
0.5,
1.0
--
/.
I~
~
3b~
VCE! .. )Q,iICill! ID_
3.0
5.0
0
0.1
10
IC. COLLECTOR CURRENT lAMP)
4-570
I:::::V
V
I -, '1111
4
V
.......
2.0
::;;.
0.2
03
f-
10
05
20 3D
IC. COLLECTOR CURRENT lAMP}
so
10
IJ1:2955, MJE29551f
MJE3055 9 IJE30551T
PNP (SILICON)
NPN
10 AMPERE
. COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
COMPLEMENTARY SILICON
POWER TRANSISTORS
designed for use in general·purpose amplifier and switching
applications.
60 VOLTS
75. 90 WATTS
o DC Current Gain Specified to 10 Amperes
o High Current Gain - Bandwidth Product 1,- = ~.O MHz (MinI @ IC = 500 mAdc
o Choice of Packages - MJE3055, MJE2955 - TO-225AB (TO·1271
MJE3055T, MJE2955T - TO-220AB
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
Vdc
Vdc
VCEO
60
Collector-Base Voltage
Vce
70
Emi~ter-Base
VEe
5.0
Vdc
IC
10
Podc
Ie
6.0
Voltage
Collector Current
Base Current
Operating and Storage Junction
Temperature Range
Adc
Watts
W/oC
Pot
Total Power Dissipation @ TC = 250 C
MJE3055, MJE2955
MJE3055T, MJE2955T
Derate above 250 C
MJE3055, MJE2955
MJE3055T,MJE2955T
90
75
TJ. T stg
••
0.72
0.6
W/oC
-55 to +150
°c
THERMAL CHARACTERISTICS
Ma.
Symbol
Charac:taristic
Thermal Resistance. Junction to esse
Unit
°CIW
OJC
1.39
1.67
MJE3055, MJE2955
MJE3055T, MJE2955T
tSafc Araa Curvos are indicated by Figure 1. Both limits are appllcablo and must be observed.
~
i
FIGURE I - ACTlVE·REGION SAFE OPERATING AREA
0
1.0msli{IDO,,-,
7.0
.0.. Ir-' I5.0
.......
z
~
2.
.~
./
MJEJ055. MJE2955 . /
0
u
o. 7
8 D.5 -1--~
!-'
0
o
~
MJE3055T
MJE2955T
0
~
O. 3
O. 2
o. I
5.0
.....
......
de
~
\ ,\ ~
7.0
TC<25'CI0<0.1I
\
1
10
20
30
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
50 60
Th.'••'.I...o hmll.I,orolon Iha powa' handlln" ablilly of a 1Ianl"to' av., ••• "nat,on
tampe,atu.a and laGond braakdown Safa ope.at,nlla.ea cu.v" ,nd,eal. Ie VCE I'm.tlof
tM t.an .. "o. Ihat, mun be ob,.'vee! fo, r.habl. oDe'at.on ,e, th. tranilito. must not b.
SUbl.et.eI to g,.at., d,,,,.,.,I,on Ihan th. cu'v.' ,nd.cate
Th. date of F'gu,. I '. b.Md on TJIPkJ ~ ISOoC. TC" v.... ~ •• d.p'nd'"OoncondJ
I.on. &.aeonel braakdown pul .. l"n"l are va •• d fa. dUIV CVelaS Iq, 10" prov,ded TJlpkl
S IS0 0 C At h,gh ea.. ,.mp••alu,.,. Iha,mal hm.!allonl w,1I .eduee 'ha powa. Ihal can b.
hand lad to val .... 1.11 Ihan tn. Ioml1al.onl .mposed bv .Kond br.akdown IS.. AN 41SAJ
4-571
1ft
~
r+c+
C
0
F
G
TJ"150'C
- - - SECOND BREAKDOWN LIMITED
- - - - BONDING WIRE LIMITED
- - - - THERMALLY LIMITED
1J
",
H
J
K
L
4.06
0.64
361
241
219
036
1210
"n "'
"'
0
S
T
U
483
S33
254
30'
2a. '279
139
591
6"
121
076
"'
-
INCHES
MAX
UI~
0595
O.~O
0160
0025
0142
0095
0110
DOl"
0500
Oil'S
0190
lDO
0080
Oil'S
0235
0030
o
DOC!)
0620
O.40S
0.190
STYLE 1
PIN I
2
3
"
BASE
COllECTOR
EMITTER
COllECTOR
om
0.147
o IDS
0130
0022
SS2
0050
0210
0120
0110
0055
0255
0050
o
-
CASE 221A·02
TQ·220AB
NOTE
I DIM L & H APPLIES
TO AULEAOS
MJE2955T
MJE3055T
MJE2955,MJE2955T,PNP,MJE3055,MJE3055T,NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unlesso.herw.se no.ed)
I
I . Symbol .1
Choroct.,i.i.
Min
Max
60
-
-
700
-
1.0
5.0
-
1.0
-
10
-
5.0
20
100
5.0
-
-
1.1
B.O
-
I.B
Unit.
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1l
Vde
VCEO(sus)
(lC· 200 mAde,lB = 0)
Collector Cutoff Current
(VCE = 30 Vde, IB
/'Ade
ICED
=0)
Collector Cutoff Current
mAde
ICEX
(VCE • 70 Vde, VEB(off) • 1.5 Vdc)
IVCE -10 Vdc, VEBloff)- 1.5 Vdc, TC' lsaGC)
Collector Cutoff Current
mAde
ICBO
IVCB = 10 Vde, IE - 0)
IVCB -10 Vde,IE - 0, TC = IS00C)
•
Emitter Cutoff Current
mAde
lEBO
(VBE - 5.0 Vde, IC - 0)
ON CHARACTERISTICS
DC Current Gain 111
IIc = 4.0 Ade, VCE = 4.0 Vde)
IIc
-
hFE
= 10 Ade, VCE ·4.0 Vde)
Collector-Emitter Saturation Voltage (1)
Vde
VCEI ..tI
IIC' 4.0Ade,IB - 0.4 Ade)
IIc - 10Ade, IB = 3.3 Ade)
Base·Emitter On Voltage (11
Vde
VBElon)
IIc • 4.0 Ade, VCE • 4.0 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain-8andwidth Product
IIC - SUO mAde, VCE = 10 Vde, f = 500 kHz)
(1)Pul .. Test: Pul .. Width ~300 "'S. Duty Cycl.~2.0%.
FIGURE 3 - POWER DERATING
FIGURE 2 - DC CURRENT GAIN
90
SOO
S
80
lOG
200
TJ
--
z
~ 100
~
z
~
!IO
:;:
30
i
2D
VeE' 20v
ISODC
s
;;
'0
I".......
I--
"' "'
"
z
a
;:: 60
2~oC
:
~
·5SoC
,0
~
i5
~~
MJE30SST
MJE29SST
40
~
~
M~E3OSS
MJE29S1
.."..
."",
30
~
"-
i~
10
\0
0
o
S0
001
0.02
DOS
01
0.2
O.S
10
2.0
Ie. COLLECTOR CURRENT lAMP I
SO
o
"'
100
10
ISO
Te. CASE TEMPERATURE (oC1
FIGURE 4 - "ON" VOLTAGES
...
..
MJE2955, 2955T
~
0
TJ" 25°C
2
m
MJE3055, 3055T
TJ"2SoC
6
~I.O
2
•
~
•
o.
r--
0
D.'
.....,b:;
VaElal) • lelia .. 10
~
§!
>"
V8EGVCE=3.0V
vJEll., L,J,. !'0
02
0.3
U
~
3.0
O.G
5.0
VeE .vee '"' 2.0 V
•
0
,0.1
'0
..............
o.
.;'"
D.2
I-""
2.0
VSElsal'.'c/1a;; 10
,~ 0.8
k:::
VCEfsall.IC/IB· 10
0.2
0.3
D.S
2.0
'C. COLLECTOR CURRENT (AMPI
'C. CO~LECTOR CURRENT IAMPI
4-572
3.0
.0
MJE3300 MJE330:1 MJE3302
MJE3310 MJE3311 MJE3312
NPN
PNP
PLASTIC DARLINGTON COMPLEMENTARY
SILICON ANNULAR POWER TRANSISTORS
· .. designed for general-purpose amplifier and high·speed switching
applications.
•
High DC Current Gain hFE = 2000 (Typ) @ IC = 1.0 Adc
•
Collector-Emitter Sustaining Voltage - @ 10 mAdc
VCEO(sus) = 40 Vdc (Min) - MJE3310/MJE3300
= 60 Vdc (Min) ,- MJE3311/MJE3301
= 80 Vdc (Min) - MJE3312/MJE3302
- 1000
dC
SONOING WIRE LIMITED
'\.
- - - THERMALLY lIMITEO@TC=25 0 C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.0 2
-
200 0
\:
1'- ...........
FIGURE 3 - TYPICAL DC CURRENT GAIN
300 0
30
50
\
100
70 100
0.2
0.3
VCE,COLLECTORHIITTERVOLTAGE (VOLTS)
0.5
0.7
1.0
2.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 4 - DARLINGTON CIRCUIT SCHEMATIC
PNP
MJE3310
thru
MJE3312
Collector
Collector
~PN
---,
r----+-----,
Base
MJE3300
I
I
thru
MJE3302
Base
I
I
I
I
,----
---,
I
I
I
I
I
I
I
I
I
I
I
IL
__ J
Emitter
___ _
__ J
Emitter
4-574
3.0
4.0 5.0
MJE343:9 (SILICON)
MJE34'4;O
0.3 AMPERE
NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS
. . . designed for use in line·operated equipment requiring high fT.
NPN SILICON
POWER TRANSISTORS
250-350 VOL TS
15 WATTS
o. High DC Current Gain hFE = 40-160 @ IC = 20 mAdc
o Current·Gain- Bandwidth Product fT = 15 MHz (Min) @ IC = 10 mAde
o Low Output Capacitance Cob = 10 pF (Max) @ f = 1.0 MHz
MAXIMUM RATINGS
Rating
Symbol
MJE3439
MJE3440
VeEO
350
250
Vdc
Collector-Base Voltage
VeB
450
350
Vdc
Emitter-Base Voltage
VES
Collector-Emitter Voltage
Collector Current
Continuous
--
Ie
I!:Sase t.,;urrent
-
IS
Total Power Dissipation@Tc==2SoC
O~rate above 25°C
PD
IOperating and Storage Junction
Temperature Range
5.0
Unit
---
Adc
150
mAde
15
0.12
-
Watts
WIDe
De
-65 to +150
TJ,T stg
Vdc
0.3
THERMAL CHARACTERISTICS
Characteristic
hermal Resistance. Junction to Case
STYLE I
PIN I. EMITTER
FIGURE 1 - POWER-TEMPERATURE OERATING CURVE
16
2. COLLECTOR
3. BASE
I---
....-
~
'"
G
'"
o
O. I
0.07
0.05
0.03
The Safe Operating Area Curves indicate· Ie-VeE limits below
which the device will not enter socondary breakdown. Collector
load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must be observed for both steady state and pulse power conditions.
~ 0.02
_
8
0.0 I
0.007
MJE3439 .
" 0.005
-' 0.003
0.002
MJE3440
0.00 I
1.0
2.03.0 5.07.010
20 30
50 70 100
200 300 500
1000
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-576
MJE13002
MJE13003
Designers Data Sheet
I
.
1.5 AMPERE
NPN SILICON
POWER TRANSISTORS
300 and 400 VOL TS
40 WATTS
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJE13002 and MJE13003 are designed for high·voltage,
high·speed power switching inductive circuits where fall time is
critical. They are particularly suited for 115 and 220 V switch-mode
applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
• Reverse Biased SOA with Inductive Loads @TC = 1000 C
• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100 0 C
. . . t c @ 1 A, 1000 C is 290 ns (Typ).
"! 700 V Blocking Capability
• SOA and Switching Applications Information.
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design .
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
-Peak III
Base Current - Continuous
-Peak 111
Emitter Current -·Continuous
- Peak (11
Total Power Oissipation@T A:::' 2SoC
VCEOlsusl
VCEV
VEBO
IC
ICM
iB
iBM
IE
IEM
Po
MJE13002
300
600
Derate above 25°C
Total Power Dissipation@Tc=250C
Derate above 2SoC
Po
TJ,T stg
Operating and Storage JUnction
I MJE13003
I 400
I 700
Unit
Vdc
Vdc
Vdc
Adc
9
1.5
3
Adc
0.75
1.5
2.25
4.5
1.4
11.2
40
320
-65 to +150
Adc
Watts
mW/oC
°c
MILLIMETERS
Temperature Range
DIM
A
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance. Junction to
Symbol
Max
Unit
ROJC
ReJA
3.12
89
°C/W
°C/W
TL
275
°c
Ambient
Maximum Lead Temperature for
Soldering Purposes: l/S" from Case
for 5 Seconds
STYLE 3
PIN 1. BASE
2. COLLECTOR
3. EMITIER
Watts
mW/oC
,
C
D
F
G
H
J
K
Q
11) Pulse Test: Pulse Width = 5 ms, Duty-Cycle';;;; 10%.
-
149
141
051
191
131
116
038
1537
M
R
,
MIN
1080
S
U
V
376
"'
064
368
101
MAX
1105
'"
"6
141
161
066
3"
064
1664
3C1 TYP
.01
140
089
394
INCHES
MIN
0425
0295
MAX
0435
0305
oog, 0105
0020 0026
0115 0125
0091 0097
0085 0095
0015 0025
0605 0655
31)TYP
0148 0158
004' 0055
0025 0035
0145 0155
0040
CASE 77-03
TO-126
4-577
•
I
MJE13002 MJE13003
ELECTRICAL CHARACTERISTICS ITC = 25°C unl;" otherwise noted'!
Symbol
Characteristic
Min
Typ
Max
300
400
-
-
-
-
-
1
5
Unit
OFF CHARACTERISTICS 11)
Collector-Emitter Sustaining Voltage
•
Vde
VCEO(sus)
MJE13002
MJE13003
(lC = 10 rnA, IB = 0)
Collector Cutoff CUrrent
(VCEV = Rated Value, VBE(off) = 1,5 Vde)
(VCEV = Rated Value, VBE(off) = 1.5 Vde, TC = lOOoC)
ICEV
Emitter Cutoff Current
(VEB = 9 Vde, IC = 0)
lEBO
mAde
1
mAde
SECOND BRIOAKDOWN
Second Breakdown Co~lector Current with base forward biased
See Figure 1
ON CHARACTERISTICS 11)
DC Current Gain
(lC = 0.5 Ade, VCE = 2 Vde)
(lc = 1 Ade, VCE = 2 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC
(lC
(lC
(lc
-
B
5
-
40
25
-
-
0.5
1
3
1
-
-
-
1
1.2
1.1
fT
4
10
-
MHz
Cob
-
21
-
pF
-
0.05
0.1
I'S
0.5
1
I'S
2
4
I'S
0.4
0.7
I'S
1.7
4
1'5
0.29
0.75
1'5
Vde
VCE(sat)
= 0.5 Ade, IB = 0.1 Ade)
= 1 Ade, I B = 0.25 Ade)
= 1.5 Ade, IB = 0.5 Ade)
= 1 Ade, IB = 0.25 Ade, TC = 100°C)
Base-Emitter Saturation Voltage
IIc = 0.5 Ade, IB = 0.1 Add
IIc = 1 Ade, IB = 0.25 Ade)
IIc ="1 Ade, IB = 0.25 Ade, Tc = lOOOC)
Vde
VBE(sat)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 100 mAde, VCE = 10 Vde, f = 1 MHz)
Output Capacitance
(VCB·l0Vde,IE=0,f=0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 125 Vde, IC = 1 A,
td
Rise Time
IBl = IB2 = 0.2 A, tp - 25 1'5,
tr
Storage Time
Duty Cycle .. 1%)
ts
Fall Time
tf
Inductive Load, Clamped (Table 1, Figure 131
Voltage Storage Time
IIC = 1 A, V clamp = 300 Vde,
tsv
Crossover Time
IBl = 0.2 A, VBEloff) = 5 Vde, TC = 100°C)
te
(l)Pulse Test: Pulse width = 300 I'S, Duty Cycle = 2%.
4-578
-
MJE13003
MJE13002
FIGURE 1 - FORWARD BIAS SAFE OPERATION AREA
FIGURE 2 - REVERSE BIAS SAFE OPERATING AREA
6
10
F-=
f-- -
5
- - 1-:-
..... ..........
-:~=~
--
-- ---=-
2
1
5
c;j:-
t=
.+----=r-I-
_~~0"51--
f--.....
2r---:--r----- 1----
lO~~~b
:-~~~i==~
'_0-
de
.-
5
10
1000C
IBI' 1 A
1
r--_\
e:sl=
~jm~~~~ :=;
f-- _. -
0.0 2 00 I
5
r-- TC
-
r----
- -
8
,
- - - SECONO BREAKDOWN LIMIT I
CURVES APPLY BELOW RATED VCED
1
~__
5.0 m,'--'k-- -c. ~I-
TC,25 0C
=_-=--= ~~~~~~AGLJi:~JTl~t~¥le ~ ~--~-f--Ii'-. t-..
2
-t-'-ffP
~t$~
20
30
50
70
200
100
300
VBE!oll)' 9 V
MJE13002-
s:...MJ~'3003-~
~
l~-
1.5 V
400
500
600
700
BOO
100
200
300
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE IVOLTSI
o
o
500
I --'
L-I
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
FIGURE 3 - FORWARD BIAS POWER DERATING
1
""
8
rr-....
'" "
I-
6
THERMAL
DERATING
'"'" "
2
10
60
40
-l- f-
t-..
4
a
BRE1KOO~N +- I -
SECONO
OERATING
f ' r-.
120
IUO
80
'" f'...
140
TC. CASE TEMPERATURE lOCI
160
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 1 is based on TC = 25 0 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown Iimitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 1 may be found
at any case temperature by using the appropriate curve on
Figure 3.
TJ(pk) may be caiculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse bias safe operating area data (Figure 2) is
discussed in the designer's application section.
FIGURE 4 - THERMAL RESPONSE
I
=£
" o. 7=0'0.5
~ o. 5
UJ~
u;~
ZOJCI.I- rltl ROJC
AUJC:; 3.t2°CIW Max
~--
>-"
z-~
1--
1
02
~ ~ 0 II--
0.05
~ ~ 0.0 71==
0.02
>->-
~ ~o.o 5
~~ 00 3 ...... ~ D02
0.0 1
0.01
~
",.0 I
,
o CURVES APPLY fOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
,
~
l--
I
~ j;...
!
I
' I
TJ{pk)~TC" P(pk) R,JJC(t)
pFSUl~
tl<- --i
-!::
I
-l-----
ri--- Smgle Pulse
-i'
0.01
i I
0.02 0.03
+--- Ii-
'2
DUTY CYCLE, 0:: tlit2
Ii
0.05
'jC
t-
I I I: I i I
0.1
0.2
0.3
05
10
t. TIME OR PULSE WIDTH Im,l
4-579
20
50
100
200
500
1000
•
MJE13002 MJE13003
FIGURE 5 - DC CURRENT GAIN
a
a
~
1.6
w
'"
~
o
~ :-: ....
T
-2: ~L:::
I
...,a
4
0.02 0.03
I
IIII
~_
,
,
\
0
0.002
0.5 0.7
t-- t0.005
0.01
IC. COLLECTOR CURRENT lAMP)
JBEI~t) @ll~/IS I. 3 1
I. 2
1 1
I
TJ'-SSOC _
'">
>0.10
-
0.05
a
0.02 0.03
...-
25°C
...-::
~::;..-
--
....
ISOoC
0.05 0.D7 0.1
0.2
0.3
0.5 0.7
IC. COLLECTOR CURRENT (AMP)
FIGURE 10 - CAPACITANCE
<
SO0
VCjE • 2S~V
I
/
300
I
r-TJ'1500C
I
"'
/
I
I
§
I
./
I - - r-500C
100
w
...,
0
~
50
~
3
>-
TJ' 2S'C
~
C,b
200
3
10
/
~O.l 5
0.05 0.07 0.1
0.2 0.3
0.5 0.7.
IC. COLLECTOR CURRENT lAMP)
f--1250C
1021--I--- t--IOOoC
I--- r-75'C
1
L
Ic/is' 3
~O.20
FIGURE 9 - COLLECTOR CUTOFF REGION
:=
I
I
'"
>-
0.05
FIGURE 8 - COLLECTOR-EMITTER SATURATION REG)ON
FIGURE 7 - BASE-EMITTER VOLTAGE
~
w
0.02
lB. SASE CURRENT lAMP)
1. 4
o
1.5 A
1\ \
\ \
\
\
\
0.4
~
0.3
IA-
0.3 A 0.5 A
8
>
0.2
IC' 0.1 Ii
o
I
0.05 0.07 0.1
-
~ o. B
~
VCE' 2 V
VCE' 5 V
-I-
1.2
~
.-
~1 a
-f-
~
I"'l ....
-55°C
c
•
~~~12S0C
~
o
TJ'ISO~C
a
z
;;:
'"z>- a
~ 2a
8
FIGURE 6 - COLLECTOR SATURATION REGION
I"-
0
..., 20
...,-
........
,
Cob
0
7
5
0.1
1== t==250C
FORWARD
10- 1~ FREVERSE
-/).2
+0.2
+0.4
-0.4
VBE. BASE·EMITIER VOLTAGE (VOLTS)
+0.6
0.2
0.5
1
5
10
20
SO 100
VR. REVERSE VOLTAGE (VOLTS!
4-580
200
5001000
MJE13002
MJE13003
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
IN4933
p;j:5V
r---W--4~~MJE210
Vee
+125 V
en
~
:::l
U
a:
c:;
0.001 pF
5V
!:
Duty Cycle
~
10%
>en
33
~~ -V2N2222
1~
6
6S
w
:+m
lk
1 k
~L270
,
~
en
:;;
a:
'c
ou.
w
~
~ 1 kV
01
5.1k
I
.t--
Scope
~
-4.0 V
51
-- VBE(off)
GAP for 30 mH/2A
Leoil "" 50 mH
Vee = 125 V
Vee"" 20 V
Re = 125 n
V clamp"" 300 Vdc
01 = , N5820 or Equiv.
RS = 47 n
OUTPUT WAVEFORMS
Unclamped
~ t2
11 Adjusted to
Obtain 'e
t
Test EqUipment
tf
;:
>In
·Selected for
:-iW
tf Clamped
l'v
r<
!.--" --... I---
Vcl amp
~ ~VeE
~o:M_JE20~
47
Ie
t +n.' -/t-/;f
-.,..
1
rvf--
2N2905
Coli Data:
Ferroxcube Core ;;6656
Full Bobbin (-200 Turns) ::20
.
RS
IS
0.02pF
PW and V CC Adjusted for Desired
RS Adjusted for Desired ISl
MRS2S'
lk
5V
IN4933
>NOTE
IN4933
~
BTUT ~
L
Scopp.-Tektronlcs
475 or EqUivalent
t r. tf < 10 ns
Duty Cycle'" , .0%
AS and RC adjusted
for desired IS and Ie
W
>-
DESIGNERS INFORMATION FOR APPLICATIONS AND SWITCHMODE SPECIFICATIONS
condition. Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) both at 25 0 C
and lOOoC. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn-on and turnoff. If the load contains a significant capacitive component,
high current and voltage can exist simultaneously during
turn-on and the pulsed forward bias SOA curves (Figure 1) are the proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as a Reverse Bias Safe
Operating Area (Figure 2) which represents voltagecurrent conditions that can be sustained during reverse
biased turn-off. This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mdde.
In the four application examples (Table 2) load lines
are shown in relation to the pulsed forward and reverse
biased SOA curves.
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage
and current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated
in Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits Band C in Table 2 illustrate applications
that require high blocking voltage capability. In both
circuits the switching transistor is subjected to voltages
substantially higher than V CC after the device is completely off (see load line diagrams at IC ~ Ileakage '" 0
in Table 2). The blocking capability at this point depends
on the base to emitter conditions and the device junction
temperature_ Since the highest device capability occurs
when the base to emitter junction is reverse biased
(VCEV), this is the recommended and specified use
(1) For detailed information on specific switching applications,
see Motorola Application Notes AN-SS8, AN-719. AN-737.
AN-752, AN-767 and Engineering Bulletin
EB-39.
4-581
•
I
MJE13002 MJE13003
handling capability and low saturation voltage. On this
data sheet, these parameters have been specified at 1
amperes which represents typical design. conditions for
these devices, The current drive requirements are usually
dictated by the V CE (sat) specification because the maxi·
mum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.
VOLTAGE REQUIREMENTS (continued)
In ci'rcuits A and D, inductive reactance is clamped by
the diodes shown, In circuits Band C the voltage is
clamped by the output rectifiers, however, the voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device, A snubber' network or an additional clamp may
be required to keep the turn·off load line within the
Reverse B'ias SOA curve,
Load lines that fall within the pulsed forward biased
SOA curve during turn·on and within the reverse bias
SOA curve during turn·off are considered safe, with the
following assumptions:
The device thermal limitations are not exceeded.
The turn·on time does not exceed 10 Il-s (see
standard pulsed forward SOA curves in Figure 1).
(1)
(2)
II
SlflilTCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tfi)' For this reason considerable effort is usually devoted
to reducing· the fall time, The recommended way t(J'
accomplish this is to reverse bias the base·emitter junction
during turn·off, The reverse biased switching character·
istics for inductive loads are discussed in Figure 11 and
Table 3 and resistive loads in Figures 13 and 14, Usually
the inductive load component will be .the dominant
factor in SWITCHMODE applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switch·
ing characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, ISee Table 1)
providing correlation between test procedures and actual
use conditions,
(3)
The base drive conditions are within the specified
limits shown on the Reverse Bias SOA curve
(Figure 2).
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy
RESISTIVE SWITCHING PERFORMANCE
FIGURE 11 - TURN·ON TIME
FIGURE 12 - TURN·OFF TIME
2
10
)
VCC 0 125 V
IC/lBo 5
TJ '" 25 0 C
1
)~I'
w
"t=
e--
I"f:::
0, 2
......
2
f"':::,
o. 3
VCC 0125 V=
ICIIB 0 5
TJ °250C -
t-
3
0, 5
~
Is
5
1
0, 7
f'-..
td@VBElolf)'5
1
O. 5
0,0 )
, 0,0 5
3
-.....
tt
2
00 3
00 2
002 003,
.:
o1
0,050,0)
0,3
02
0,1
05 0)
10
002
20
003
0,05 00) 0,1
02
03
,0.5, 0)
1
2
IC, COLLECTOR CURRENT iAMP)
Ie, COLLECTOR CURRENT (AMP)
FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
(at 300 V and 1 A with IB1 = 0.2 A and VBE(off) =,5,0 VI
IC
--
90% VCE A~90% IC
r--- tsv
~trv tH~·t!i-~tu-..
-
--
VCE
IB-
---? '-tc-\
/
vCE
90% IBI
r-----
-- --\- -- ---- -~
--
>
10%' ......
IC-
>z
w
>
c
c
4:
:;;
1,\
10%
-
r--
t"z%'IC
>
0
~
w
'"
'"~
co
co
=>
0
>
"
I---
TIME
TIME 100 nslDIV
4-582
MJE13002
MJE13003
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
SERIES SWITCHING
REGULATOR
3.0 A - - - - "\
TIME DIAGRAMS
Turn-On (Forward Bias) SOA
, / ton ~ lOlls
\
Duty Cycle
... TC"" 100oC~
~
\
a
~
10%
"PO" 4BO W @
1.5 A
',-<300 V
Turn-Off (Reverse 8las) SOA
1.5 V ~ VaE(off) .:,: 9.0 V
/
I Duty Cycle';;; 10%
,"----''---.
A
Time
,,
Vcc
VCE
I
VCC 400 V
CD
700
vCD
Col/ector Voltage
Notes.
CD
MJE13003 Voltage Ratings (VCEO(sus) and VCEV) are Shown,
MJE 13002 Ratings ore 100 V Lower.
See AN-S69 for Pulse Power Derating Procedure.
®
RINGING CHOKE
INVERTER
3,QA----""\
\"
\
/Turn-O n (Forward Bias) SOA
ton ~ lOlls
Duty CYCle
'0%
<
III~
Ne
Vcc
B
~!
~
1 ~o 8_
300 V
'I(
1.5 A
~~"
~
Turn-Off
Turn·Off (Reverse Bias) SOA
-,
I
1.5 V ~ VBE(off) oS;; 9.0 V
Duty Cycle ~ '0%
/
CD
MJE13003 Voltage Ratings (VCEO(sus) and VCEV) Are Shown.
MJE13002 Ratings Are 100 V Lower.
See AN·569 For Pulse Power Derating Procedure
. / Turn·On (Forward Bias! SOA
t on <;10ps
3.0A----,/
\
DutY Cycle -::;;; 10%
'c.
... TC= 1000 C - ' , PO=,480W@
~
11101
\
8 1.5 A
'300 V
Turn·Off (Reverse Bias) SOA
" ' . . . . . ' . 5 V -r;,; VSE(off!
Turn-On
0
I
,
I
I
~ 9.0
V
Dutv Cycle ~ 10%
I
I
@)
MJE 13003 Voltage Ratings (VCEO(sus) and VCEV) Are Shown,
MJE13002 Ratings Are 100 V Lower.
See AN-569 for Pulse Power Derating Procedure.
\
Dutv Cycle :r;;; 10%
TC"'OOoC-' P,O"4BOW@
~
\
t.
<3
1.5 A
',300 V
Turn-Off (Reverse Bias) SOA
, 1 . 5 V ~ VBE(off) ~ 9 ..0 V
..... ....,
Duty Cycle ~ 10%
s
~
o
u
~
./
TJ ~ I_ ssdc
09
25'C
0-
~
2~_
I5O'C
0.5
>
03
0.04 0.06
...-
I-
~
V
~
~
V
'"
... 01
'l
1-"..1
V
-)-
0.2
~~
le/lB ~4
0.4 5
11
;:J;_
'(f1
~~
t: g 0.35
:;;-
WW
TJ ~ -55'C
:= ~ 0.25
I
25'~
j>
8
e
>
0.6
0.1 5
0.05
0.04 0.06
0.1
t-- VeE-250V
'"o
~
I
0.4
15O'C
0.6
.....
1/
W
II
'-'
~ 300
5
I--- 1-- 100'C
1== F=7~OC
500 C
:t
~.
I
/
1/
I
25'C
O. I F = FREVERSE
-0.4
-0.2
Cib
k
10 0
~ 50 0
1== F=125'C
8
.9
I
11
I--TJ ~ Iso'e
10
0.2
/ . ~V
~
k
1k
i3
I-" I:::;;E;:
t& ~
FIGURE 10 - CAPACITANCE
FIGURE 9 - COLLECTOR CUTOFF REGION
100
b--- f---
/
Ie. COLLECTOR CURRENT lAMP)
10 k
...
~_
0.1
COLLECTOR·EMITTER SATURATION VOL TAGE
IC. COLLECTOR CURRENT (AMP)
«
.3
0.5
'-'0
l-
Ok
0.3
D:~
./
I
0.1
a-
0.55
'"
2V
1
W
~
:£:
FIGURE
z
I I I I ~~E(sal) ~ IC~IB ~ 41
--
0.2
lB. BASE CURRENT lAMP)
FIGURE 7 - BASE·EMITTER VOLTAGE
~
.....
-r-
0.1
0.05
114A
1\
f\...
0
IC. COLLECTOR CURRENT lAMP)
1.3
3A
TJ ~ 2S'C
II II
1
1\
"
8 o. 4
>
0.06
1\
o. 8
g
5
2A
1. 2
~
ci:
o
~ ~ ~ ~~
VCE - 2 V
VCE ~ 5 V
I
\
lIC.~ IA
~
~ ~,
·5S'C
'-'
1.6
11
II
\
1
'"w~
'"
'"
~
'"
ffi
I-
25'C
<1
'"
~
~
125'C
FORWARO
+0.2
+0.4
20 0
Cob
100
0
0
0
20
0.3
+0.6
VBE. BASE·EMITTER VOLTAGE IVOLTS)
l'
0.5
10
30
SO
VR. REVERSE VOLTAGE (VOLTS)
4-588
!--t100
300
MJE13004,MJE13005
TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING
REVERSE BIAS SAF.E OPERATING AREA AND INDUCTIVE SWITCHING
IN4933
+125 V
Vee
L
33
MRB2S*
IN4933
Vcl amp
Duty Cycle
~
=s; 10
ns
t r • tf
I.
10%
Selected for:'" 1 k V
5.1 k
-40 v
51
NOTE
PWand
Vee
Adjusted for Desired
Ie
Rs Adjusted for OCsired le1
Coil Data.
Ferro)(cube Core -F6656
Full Bobbin ( .... '6 Turns) #16
- VSE(off)
GAP for 200 .uH/20A
Vee == 20 V
Vel amp =- 300 Vdc
Lcoil == 200 /JH
Vee - 125 V
Re
62 n
01 "- , N5820 or EQulV
RB
22 n
0
0
OUTPUT WAVEFORMS
II)
::;:
11 Adjusted to
a:
au.
Obtain I C"
Test EqUipment
w
>
«
Scope -
s:
TektroniX
475 or Equivalent
!iw.i
....
'2 ~
Lead (Ie k)
P
VClamp
t,.
tf ...: 10 ns
Duty Cycle
== ,
0%
R Band RC adjusted
for deSIred 18 and IC
APPLICATIONS INFORMATION FOR SWITCHMODE'" SPECIFICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage
and current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated
in Table 2.(1)
VOLTAGE REOUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits Band C in Table 2 illustrate applications
that require high blocking voltage capability. In both
circuits the switching transistor is subjected to voltages
substantially higher than V CC after the device is completely off (see load line diagrams at IC = Ileakage "" 0
in Table 2). The blocking capability at this point depends
on the base to emitter conditions and the device junction
temperature. Since the highest device capability occurs
when the base to emitter junction is reverse biased
(VCEV), .this is the recommended and specified use
(11
For detailed Information on specific switchmg applications,
see Motorola Application Notes AN·719, AN·737. AN-767.
condition_ Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) both at 25 0 C
and 100 0 C. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn-on and turn-
off. If the load contains a significant capacitive component,
high current and voltage can exist simultaneously during
turn-on and the pulsed forward bias SOA curves (Fig·
ure 1) are the proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased_ Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as a Reverse Bias Safe
Operating Area (Figure 2) which represents voltagecurrent conditions that can be sustained dUring ·reverse
biased turn-off. This rating is verified under clamped
conditions so that the device is. never subjected to an
avalanche mode.
In the four application examples (Table 2) load line~
are shown in relation to the pulsed forward and reverse
biased SOA curves.
AN-752
4-589
..
MJE13004,MJE13005
VOL TAGE REQUIREMENTS (continued 1
handling capability and low saturation voltage, On this
data sheet, these parameters have been specified at 5
amperes which represe.nts typical design conditions for
these devices. The current drive requir'ements are usually
dictated by the VCE(satl specification because the maxi·
mum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.
In circuits A and D, inductive reactance is clamped by
the diodes shown. In circuits Band C the voltage is
clamped by the ou'tput rectifiers, however, th~ voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. A s'lubber network or an additional clamp may
be required to keep the turn· off load line within the
Reverse Bias SOA curve,
.
Load lines that fall within the pulsed forward biased
SOA curve during turn·on and within the re'Verse bias
SOA curve during turn·off are considered safe, with the
, following assumptions:
•
(11
The device thermal limitations are not exceeded,
(21
The turn·on time does not exceed 10 I1S (see stan·
dard pulsed forward SOA curves in Figure 11-
(31
The base drive conditions are within the specified
limits shown on the Reverse Bias SOA curve
(Figure 2!.
I
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tfi!. For this reason considerable effort is usually devoted
to reducing the fall time. The recommended way to~
accomplish this is to reverse bias the base·emitter junction
during turn·off, The reverse biased switching character·
istics for inductive. loads are discussed in Figure 11 and
Table 3 and resistive loads in Figures 13 and 14. Usually
the inductive load component will be the dominant
factor in SWITCHMODE applications and the inductive
switching data will more closely represent the device
performance in actual application: The inductive switch·
ing characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, (See Table 11
providing correlation l:Jetween test procedures and actual
use conditions,
. CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy
RESISTIVE SWITCHING PERFORMANCE
FIGURE 11 - TURN·ON TIME
I
VCC"125~
lclis - 5
Tr 25"C
O. 5
r'-.. 'r
O. 2
~
.
I-
FIGURE 12 - TURN·OFF TIME
10
./
~
1/
"
,
........
.3
~
O. 1
w
";:::
0.0 5
0.5
'd@VSE(offl" 5 v
I--
tt
0.3
I-+--l
0.0 2
0.0 1
0.04
VCC-125V
Ic/lS - 5
TJ" 25°C
0.2
O. 1
0.1
0.4
0.2
0.04
Ie, COLLECTOR CURRENT (AMPI
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPI
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
(at 300 V and 4 A with IBT = 0.8 A and VBE(offl = 5.0 VI
r-t
IC
90% Vcl amp
I- ---tsv
f-------
trv
A~90% Ie
ff'H-\·tfl ..... -", ...
, i---1 I-',~ r--
/
Vclamp
Vclamp 90~'.
IS 1
--1--\- - :
1
.............
----
--
f.---
>
-
'"
c
c
:;
:
'"
c
W
«
>:;
w
'"
·B
>
,
TIME
TIME 100 n,/OIV
4-590
MJE13004,MJE13005
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
LOAD LINE DIAGRAMS
CIRCUIT
SERIES SWITCHING
REGULATOR
16A - - - - "\
TIME DIAGRAMS
Turn-On (Forward BI.,) SOA
" t o n <; 10",.
Dutv Cycle <; 10%
\
E TC -1000~ PO:
~
\
a
A
SA
r--""-----\"
S
.!l
o
u
320OW®
') r
" .......... 300 V
Turn-Off (Reverse Bias) SOA
1.5 V <;VBE(off)" 9,0 V
Duty Cycle.s;; 10%
Vee
700
Time
vu
640
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Characteristic
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature tor
Soldering Purposes: l/S" from Case
for 5 Seconds
l'
-65 to +150
Symbol
MIx
Unit
ROJC
ROJA
1.56
62.5
°CIW
uCIW
TL
276
°c
111 Pulse Test: Pulse Width = 5 ms, Duty Cycle'; 10%.
/1--_-----1
~ v
tu
UI
K
o
/4Trt
llW
,lor-I
.L",
T
JSECTA.A
1"';13
A iJ
'j' j~
L
3. EMITTER
4. COLLECTOR
Lf
NOTE
1. DIM. L& H APPLIES
TO ALL LEAOS.
MILLIMETERS
DIM MIN MAX
A 15.11 15.75
B
9.65 10.29
C
4,06
4,82
o 0.64 0.89
F
3.61
3.73
G
2,41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
L
1.14
1.27
N
4.83
5.33
Q
2.54
3.04
R 2.04
2.79
S
1.14
1.39
T
5,97
6,48
U
0.76
1.27
V
1.14
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0,160 0,190
0.025 0,035
0.142 0.147
0,095 0.105
0,110 0,130
0.014 0.022
0,500 0,562
0.045 0,050
0.190 0.210
0.100 0.120
0,080 0.110
0.045 0,055
0,235 0,255
0.030 0.050
0.045
CASE 221A-02
TO·220AB
4-593
.:.l
""~,: ,~i~t~
2. COLLECTOR
Watt.
mWloC
Watts
mWloC
uC
THERMAL CHARACTERISTICS
Thermal Aesistance, Junction to Case
I
C
H
MJE13006,MJE13007
ELECTRICAL CHARACTERISTICS ITC = 2SoC unless otherwise noted.!
Symbol
Characteristic
Min
Typ
Max
300
400
-
-
-
-
1
S
Unit
'OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
ICEV
IVCEV = Rated Value, VaEloffl = 1.5 Vde)
IVCEV = Rated Value, VaEloffl = I.S Vde, TC = 100°C)
•
Vde
VCEOlsus)
MJE13006
MJE13007
IIC= 10mA,la=0)
mAde
lEBO
Emitter Cutoff Current
-
1
mAde
IVEa = 9 Vde, IC = 0)
SECOND aREAKDOWN
Second Breakdown Collector Current with base forward biased
See Figure 1
Clamped Inductive SOA with Base Reverse Biased
See Figurp 2
'ON CHARACTERISTICS
VCEI.a!)
Collector-Emitter Saturation Voltage
IIC = 2 Adc,
IIc = S Ade,
IIc = 8 Ade,
IIc = S Adc,
la
la
18
la
-
hFE
DC Current Gain
IIC = 2 Ade, VCE = 5 Vdc)
IIc = 5 Ade, VCE = 5 Vdc)
= 0.4 Ade)
= 1 Ade)
= 2 Adc)
= 1 Adc, TC = 100°C)
8
6
-
40
30
-
-
1
1.5
3
2
Vde
-
Vde
VaElsat)
Base-Emitter Saturation Voltage
-
-
-
IT
4
-
-
MHz
Cob
-
110
-
pF
td
-
0.05
0.1
/JS
0.5
1
I'S
1
3
I'S
0.15
0.7
/J.
tsv
-
0.86
2.3
/J'
te
-
0.14
0.7
/J'
IIc = 2 Adc, la = 0.4 Adc)
IIc = S Adc, I a = 1 Ade)
(lc = S Adc, la = 1 Adc, TC = 1000 C)
-
1.2
1.6 •
I.S
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = SOO mAde, VCE = 10 Vde, 1=1 MHz)
Output Capacitance
IVca - 10 Vdc, IE = 0, I = 0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 11
=125 Vdc, IC = S A,
Delay Time
(VCC
Rise Time
lal = 182
Storage Time
Duty Cycle" 1%)
= 1 A,
tr
tp = 251's,
t.
tl
Fall Time
Inductive Load; Clamped ITable 1, Figure 13)
Voltage Storage Time
Crossover Time
!.IC = 5 A, Vel amp = 300 Vdc,
I 181 = 1 A, V8E(off) = 5 Vdc, TC
·Pul •• T.st: Pul •• Width
a
a
1000 C)
3001", Duty Cycl. = 2%.
\ 4-594
MJE13006,MJE13007
FIGURE 1 - FORWARD BIAS SAFE OPERATING AREA
5
~
....
I
'"0
~
8
~
10
-'h.. 10"~E
10
~
FIGURE 2 - REVERSE BIAS SWITCHING SAFE OPERATING AREA
-
20
1
(SinglePulse)- DC
2
100"'~r-=F
rn,
1',
"
1
=25 DC
0.5
TC
0.2
_I.
"
THERMAL
LIMIT(Single Pulse
0.05
5
002
~
"
6
~
4
~
:
'"0
0
1\\
TC .. l00 DC
/--IBI = 2.5A
\\~
_\\' ~
'\ "-
u
~
"
- - - BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPL Y BELOW RATED VCEO:3; 1=1=
MJE 13006 ="
MJE1300i= I--'
500
200 300
10
20
30
50 70 100
--
0.1
8
,;:
I"
MJE13006
MJE13007
2
,""
.'\
...... .:-......
~
~~
7
00
100
VCE. COLLECTOR - EMITTER VOLTAGE IVOL TS)
300
200
VBEIDff) =9 V -
-:-+
400
500
.
1:":=
5 V _
VV
="::F::::;:lJ5
700
600
800
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE IVOLTS)
The Safe Operating Area figures shown in Figures 1 and 2 are specIfied ratings for these deVices under the test conditions shown.
FIGURE 3 - FORWARD BIAS POWER DERATING
~ r<=
'"
08
o
t;
~
-
r-- I-
I"
z
>=
I-
'"
0.6
THERMAL
DERATING
;;;
~ 0.4
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 1 is based on TC =' 25 0 C; TJ(pk)
is variable depending on power level, Second breakdown
pube limits are valid for duty cycles to 10% but must be
derated when TC;;' 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 1 may be found
at any case temperature by using the appropriate curve on
Figure 3.
TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imp~osed by second breakdown.
Use of reverse biased safe operating area data (Figure 2)
is discussed in the applications information section.
SECOND BREAKOOWN
DERATING
-
--
r--...
1- t-
1'-..
'" "
'"~
~ 0.2
I'..
f'...
40
~
100
BO
60
140
120
Te. CASE TEMPERATURE IDC)
160
FIGURE 4 - TYPICAL THERMAL RESPONSE [ZOJc(t)]
7
5
0= 0 5
2
..
. .
3
-
02
~ 00 2"""'"
gj
~
- ""'I
g 001
001
001
-
tJUl"
~~~
.....
I
01
1
~
PI,kl
Z(JJCOI ~ rfl! ROJC
ROJe :.1.56° crw Max
o CU RVES APPL Y fOR POWER
PULSE TRAIN SHOWN.
READ TIME AT IJ
TJI,k) • TC = PI,kI.Z/lJCiIl
DUTY CYCLE. 0 • 1J112
SlnEI~Lr[1
005
1
:::;;;00
;;;.-"
01
1
'" 0 07 - 005
~ 00 5 - 002
~ 003
;:;;0-
.-- -: 1""'1-'
01
05
11111
10
2
t,
TIME (ms)
4-595
I I
20
I I
11'111
50
100
Ii
100
I LiUl
500
1 k
•
MJE13006,MJE13007
FIGURE 5 -DC CURRENT GAIN
0
FIGURE 6 - COLLECTOR SATURATION REGION
~/ 150D~
•
2:
1'-
N
C
'"o~
"'-.
>
B
0.2
I
03
I
05 0.7
IC, COLLECTOR CURRENT (AMP)
1.6
O. 6
~
Ic/lB - 3
o
TJ - -55 DC
w
to
1
o. B
I-- l -
-I--I-
I-o.4
0.1
0
0.2
--
0.3
!:::'JODC
t-
t-
~
o
>
V
>"
t-
0.5 0.7
IC. COLLECTOR CURRENT (AMP)
L
Ic/lS - 3.
TJ--SSD~
0.3
~
o. 2
0
0.1
10
0.2
.....
l::;2
0.3
0,5
~
d"
~
~
~ ISODC
1&1
2SoC
0.7
10
IC, COLLECTOR CURRENT (AMP)
FIGURE 10 - CAPACITANCE
/
/
TJ = 2S DC
5K
/
--I-
2K
a
-
=150 DC
~ 100 I - - _125DC
-IOODC
-75 DC
I
,
.1
I
I
~VCIE =250:
f---TJ
!J
0.3
0.5 0.7
IB, SASE CURRENT (AMP)
10K
....1
z
u
l - t-
w
to
IK
10
'-
"'" r--
S
FIGURE 9 - COLLECTOR CUTOFF REGION
o
\
2: 0.4
+---25 DC - -
.6
'"
~
I\,
\
0.2
BA
o
2:. 1. 2
_
1
\
FIGURE 8 - COLLECTOR·EMITTER SATURATION VOLTAGE
O. 7
~ 1. 4f-- i-
5A
\
0
0.05 0.07 0.1
10
B
10K
3A
4
FIGURE 7 - BASE·EMITTER SATURATION VOLTAGE
>-
1A
a
I
0.1
~
=
VCE = 5V
4
>
IC
t-
6
o
1. 2
TJ = 25 0 C
1
1. 6
w
to
-1 I'---".,\
0
\
~
o
r--..l
0
2
~
-
I
I
~
/
....
'"
./
w
~
./
50 0
U 20 0
~
5
u
-50DC
:::::::: =25 C
-= :; REVERSE
10 0
CDb
0
0
0
0,1
·04
Cib
IK
FORWARD
·0.2
+0,2
+0.4
VBE, BASE·EMITTER VOLTAGE (VOLTS)
0
1 0.1 0,2
+0.6
0,5
10
20
SO
VR, REVERSE VOLTAGE (VOLTS)
4-596
100 200
500 1000
MJE13006,MJE13007
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
SERIES SWITCHING
REGULATOR
~ ton'"
\
lOlls
DutY Cycle';;; 10%
:: Te -
1000~ Po = 3200W®
U
"...
300 V
---'-----<-
~
SA
j
A
TIME DIAGRAMS
Turn.On (Forward BI.,) SOA
l6A - - - - '\
Turn-Off (Raveraa Biasl SOA
1.5 V .:; VSEloff) .:; 9.0 V
Duty Cycle
<:
10%
Time
~--'----,
(j
u
700
v
33 IN4933
!:
:>
tJ
0:
U
l-
1
Duty Cycle" 1 0%
tr,tf ~ 10 ns
Vcl amp
·Selected for
~ 1 kV
V>
w
I-
"-4.0 V
NOTE
PW and Vee Adjusted for Posired
AS Adjusted for Desired 181
Ie
-VBE(off)
Vee'" 125 V
Coil Data'
GAP for 200 J,lH/20A
Vee'" 20 V
Ferro)(cube Core P6656
Full Bobbin (-16 Turns) #16
Leail "" 200 J.lH
Vclamp
= 300
Rc = 25 n
Vdc
D1 '" 1 N5B20 or Equlv
, RB
= Ion
OUTPUT WAVEFORMS
V>
:<
0:
o
tl Adjusted to
Obtam Ie
II.
Test Equipment
W
~
LcoolllCpkl
" ~
VCC
s:
Iiiw
Scope - Tektronix
475 or Equivalent
'2 ~ Lco,IIICpk'
I-
tf < 10 ns
Duty Cycle == 1.0%
t r.
Vclamp
AS and RC adjusted
for desired IS and Ie
APPLICATIONS INFORMATION FOR SWITCHMODE
cpndition. Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) both at 25 0 C
and lOOoC. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn·on and turn·
off. If the load contains a significant capacitive component,
high current and voltage can exist simultaneously during
turn·on and the pulsed forward bias SOA curves (Fig·
ure 1) are the proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn·off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accolJ1pl ished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as a Reverse Bias Safe
Operating' Area (Figure 2) which represents voltage·
current conditions that can be sustained during reverse
biased turn·off. This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
In the four application examples (Table 2) load lines
are shown in relation to the pulsed forward and reverse
biased SOA curves .
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage
and current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed antl related to the circuit examples illustrated
in Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits Band C in Table 2 illustrate applications
that require high blocking voltage capability. In both
circuits the switching transistor is subjected> to voltages
substantially higher than VCC after the device is com·
pletely off (see load line diagrams at IC = Ileakage '" 0
in Table 2). The blocking capability at this point depends
on the basa to emitter conditions and the device junction
temperature. Since the highest device capability occurs
when the base to emitter junction is reverse biased
(VCEV), this is the recommended and specified use
(1)
SPECIFICATIONS
For detailed information on specific switching application.,
••• Motorola Application Not•• AN·719, AN·737. AN·7S7,
AN·762
4-599
MJE13006,MJE13007
VOLTAGE REQUIREMENTS (continued)
handling capability and low saturation voltage. On this
data sheet, these parameters have been specified at 5
amperes which represents typical design conditions for
these devices. The current drive requirements are usually
dictated by the VCE(sat) specification because the maxi·
mum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.
In circuits A and D, inductive reactance is clamped by
the diodes shown. In circuits Band C the voltage is
clamped by the output rectifiers, however, the voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. 'A snubber network or an additional clamp may
be required to keep the turn·off load line within the
Reverse Bias SOA curve.
Load lines that fall within the pulsed forward biased
SOA curve during turn·on and within the reverse bias
SOA curve during turn·off are considered safe, with the
following assumptions:
.
•
(1)
The device thermal limitations are not exceeded.
(2)
The turn·on time does not exceed 10 /1S (see stan·
dard pulsed forward SOA curves in Figure 1).
(3)
The base drive conditions are within the specified
limits shown on the Reverse Bias SOA curve
(Figure 2).
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tfi)' For this reason considerable effort is usually devoted
to reducing the fall time, The recommended way to
accomplish this is to reverse bias the base·emitter junction
during turn·off, The reverse biased switching character·
istics for inductive loads are discussed in Figure 11 and
Table 3 and resistive loads in Figures 13 and 14, Usually
the inductive load component will be the dominant
factor in SWITCHMODE applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switch·
ing characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, (See Table 1)
providing correlation between test procedures and actual
use conditions,
RESISTIVE SWITCHING PERFORMANCE
FIGURE 11 - TURN·ON TIME
FIGURE 12 - TURN·OFF TIME
2K
lK
500
]
~r
.::-,.
~
lK
'\. r-...
300
-
I"-
~
V
'"
500
;::
3D D
100
I"\.
"
200
0
0,2
0,3
0,5 0.7
1
100
0,1
10
IC, COLLECTOR CURRENT (AMP)
0,3
If
D,S
0.7
I-'
3
10
FIGURE 14 - TYPICAL INOUCTIVE SWITCHING WAVEFORMS
(at 300 V and SA with IB1 = 1.SA and VBE(off) = 5 VI
r-t-
IC
90% Vclamp l~ 90% IC
r-- -Isv
--
Irv
h
. -"-
:fl~II.'''''
r-Ic~
/
Vclilmp
t-
Vclamp-
90% IBI
-,-
~
-
j...---
r-
I"
10%
r----- --l-\ -- ----
r----
0,2
i'
IC, COLLECTOR CURRENT (AMP)
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
IB-
VCC·l 25V
ICI1B·5
TJ·25 0 C
lI"-
Id@VBE(off) c 5V
0
-t--r--...
700
r'\. 'r-.
~ 200
;::
-'
Is
Vee - 125 V
Ic/IB·5
TJ·25 0 C
100
Vclamp -
1-''''''
10% ......
IC-
veE
?
c
?
c
~
:>
M
r;;~
IC
-
Ie
I
'"!
0
"'w
I2
w
"
of
I-
a:
a:
.J
::J
0
0
>
Ie
TIME
TIME
4-600
20 ns/DIV
MJE13008
MJE13009
12 AMPERE
NPN SILICON
POWER TRANSISTORS
300 anll400 VOLTS
100 WATTS
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJE 13008 and MJE 13009 are designed for high·voltage,
high·speed power switching inductive circuits where fall time is
critical. They are particu larly su ited for 115 and 220 V switch·
mode applications such as Switching Regulators, I nverters, Motor
Controls, Solenoid/Relay drivers and Deflectioncircuits.
SPECIFICATION FEATURES:
Designer's Data for
"Worst Case" Conditions
.. VCEO(sus) 400 V and 300 V
.. Reverse Bias SOA with Inductive Loads
@
T C = 1000 C
The" Designers Data Sheet per·
mits the design of most circuits
entirely from the information pre:
sented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.
.. Inductive Switching Matrix 3 to 12 Amp, 25 and 1000 C
... t c @ 8 A, 1000 C is 120 ns (Typ).
.. 700 V 8 locking Capability
o SOA and Switching Applications Information.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Contmuous
Symbol
MJE13008
VCEOlsusl
300
VCEV
600
I MJE13009
Unit
I
400
Vdc
700
Vdc
I
Veso
9
Vdc
IC
ICM
12
24
Adc
Base Current - Continuous
- Peak III
Emitter Current -: Continuous
-Peak III
Total Power Dissipation@T A = 25°C
Derate above 2SoC
IS
'BM
Ie
6
12
Adc
18
36
Adc
Watts
mW/oC
Total Power Dissipation@Tc=25 0 C
Derate above 2SoC
Po
2
16
100
800
Watts
mW/oC
-6510 +150
°c
- Peak III
Operating and Storage Junction
'EM
Po
TJ,Tsl9
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes' , IS" from Case
Symbol
Max
Unit
ROJC
ROJA
1.25
62.5
°C/W
°C/W
TL
275
°c
for 5 Seconds
III Pulse Test: Pulse Width
= 5 ms, Outy Cycle ..
10%.
~4l-.ia
F
I-~
i '+tu
r-1-J J~r
=1l'-
S
C
/o/It
~
U
~J-R
ST~,~E r ::
K
./;/
J SECTA·A
,~b:'l
l~
i !u~II
II'lf't-L
o....j :-
2. COLLECTOR
J. EMITTER
4. COLLECTOR
MILLIMETERS
DIM MIN
MAX
A 15.11 15.75
8
9.65 10.29
C
4.06
4.82
D
0.64
0.89
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
L
1.14
1.27
N
4.83
5.33
Q
2.54
3.04
R
2.04
2.79
S
1.14
1.39
T
5.97
6.48
U
0,76
1.27
V
1.14
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221A.Q2
TO·220AB
4-601
G
NOTE
I. DIM. l & H APPLIES
TO ALL LEADS.
MJE13008,MJE13009
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
300
400
-
-
-
-
1
5
Unit
'OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IIc
= 10 mA,
la
MJE1300a
MJEI3009
Collector Cutoff Current
IVCEV
IVCEV
•
ICEV
= Rated Value, VaEloff) = 1.5 Vde)
= Rated Value, VaEloff) = 1.5 Vde, TC = 100°(:)
Emitter Cutoff Current
IVEa
=9 Vde,
IC
Vde
VCEOlsus)
=0)
IEaO
= 0)
-
-
mAde
1
mA~c
SECOND aREAKDOWN
Second Breakdown Collector Current with base forward biased
See Figure 1
Clamped Inductive SOA with Base Reverse Biased
See Figur. 2
'ON CHARACTERISTICS
DC Current Gain
IIc
IIc
5 Ade, VCE
=a Ade, VCE
Collector~Emitter
(lC
IIc
IIc
IIc
hFE
~
40
30
-
-
I
1.5
3
2
-
-
-
-
1.2
1.6
1.5
IT
4
-
-
MHz
Cob
-
laO
-
pF
8
6
Saturation Voltage
VCEls.t)
=5 Ade, la = lAde)
=a Ade,la = 1,6 Ade)
= 12 Ade, la =3 Adc)
=a Ade, la = 1.6 Ade, Tc = 100°C)
Base-Emitter Saturation Voltage
IIC
IIc
(lc
--
= 5 Vde)
= 5 Vde)
VBEIs.t)
=5 Adc, la = lAde)
=a Ade, la = 1.6 Ade)
=a Ade,la = 1.6 Ade, Tc = 100°C)
-
-
-
Vde
Vde
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 500 mAde, VCE = 10 Vde, I
= 1 MHz)
Output Capacitance
!Vca' 10 Vde. IE
~
O. I
=
0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
= 125 Vde, IC =a A,
= la2 = 1.6 A, tp = 25 ~s,
Oelay Time
IVCC
td
-
0.06
0.1
~s
Rise Time
lal
tr
0.45
1
~s
Storage Time
Duty Cycle
-
1.3
3
~s
0.2
0.7
/lS
0.92
2.3
/lS
0.12
0.7
~s
:r;,;;,
1%)
ts
Fall Time
tl
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
.
Cro"over Time
Pulse Test. Puis. Width
=S A, Vel amp = 300 Vde,
= 5 Vde, TC = 100°C)
-- 300 /lS, Duty Cycle = 2% .
(lC
tsv
lSI ~ 1.6 A, VSEloffl
te
4-602
-
MJE13008,MJE13009
FIGURE 2 - REVERSE BIAS SWITCHING SAFE
OPERATING AREA
FIGURE 1 - FORWARD BIAS SAFE
OPERATING AREA
4
10"'5
o
§'
~
~
::1
2
(Single Pulsel
10
2
a
Bf--
1
:3
~
8
_ !C<;100 0 C
'Bl" 2.5 A
-
-THERMAL LIMIT (Single Pulse)
0.5E-- - BONDING WIRE LIMIT
SECOND BREAK~OWN LIMIT
t-
1\
0
1m.
5
CURVES APPl Y BELOW RATEO VCEO
0.2
0.1
~ 0.05
rs:;,-
20
10
5
30
50
70
100
200
300
1\
4
1\ I\.
~
2
MJE 1300B;:;;;:
MJEI300S-f---..:'-
0.02
0.01
6
0
500
VCE. COLLECTOR - EMITTER VOLTAGE (VOL TSI
~
VBE(offl" S V
MJE1300B
.........
~JE1300
~J
.l"- S V
3 V1.5 V
100
200
300
400
500
600
BOO
700
VCEV. CoLLECTOR·EMITTER CLAMP VOLTAGE (VOLTSI
The Safe Operating Araa figuras shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate .
The data of Figure 1 is based on TC ~ 25 0 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 1 may be found
at any case temperature by using the 'appropriate curve on
Figure 3.
TJ(pk) may be calculated from the data in Figure 4 .
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safa oparating area data (Figure 2)
is discussed in the applications information section.
FIGURE 3 - FORWARD BIAS POWER DERATING
1
I---
'"" r--....
O. B
a:
o
""'"
t;
:t
.........
o. 6
I---
..........
......
:;'"
z
"'-
ffi
THERMAL
DERATING
O. 4
o
"-
a:
.~
-
SECOND BREAKDOWN
OERATING
r-
."-
-...
L-
......
O. 2
.......
0
20
40
"
60
BO
100
120
TC. CASE TEMPERATURE (OCI
140
160
FIGURE 4 - TYPICAL THERMAL RESPONSE
"
~
:::;
'"
:
o
~
w
u
:i
in
10
7
05
o • 05
--
3
02
$
...
~ 0021-"
/
g 00.
00'
...-::
02
;;;..-
01
01
'" 00 7 - 005
~ 00 5 - 002
t- 00 3
~
IZOJc(tll
~
,.......,
002
_t::;:::::"
....
-
P'pkl
tJUl
-r~~
~UTY
SljGi EilLli
005
01
ro
05
I,
TIME fms)
4-603
TJlpkl - TC' Plpkl ZOJCI.,
CYCLE. 0 • 111'2
IIIII
02
ZOJClli • rl., ROJC
ROJC ·1.25'CII'I Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II
I
I
20
I I I IIIII
50
'00
I
I
200
I
I I III
500
•0k
•
MJE13008,MJE13009
FIGURE 5 -DC CURRENT GAIN
FIGURE 6 - COLLECTOR SATURATION REGION
0
2
s
o
2S oC
-.0;.;'-.
'"~
r-'
> I. 2
I
0.3
\
o
~ ..
't
\
~
10
0
0.05
>
20
om
0.2
0.1
IC. COLLECTOR CURRENT (AMP)
•
'"
~
o
-
--.---
w
'"
2SoC
o. a
>
>.
O.
'11.2 0.3
-
0.5 0.7
I I III
~
00.
V
~
w
V
~
'--SSoc
o.3
~
./lsooc
~ O. 2
...,;~
>.
I
7
3
0
I
0.2
20
0.3
0.5 0.7
;
moc
r----- -IOOOC
:::>
10
r---- -75 0 C
I
L
/
~
./
;) 200
0
fORWARD
·02
+02
+0'
VBE. BASE EMITTER VOLTAGE IVol TS)
J
!
0
• o. I
+06
4-604
~Ob
"
100
a0
60
t== :=25 C
·0 •
--
400
i3
;t
r---- -50OC
O. Ir+= FREVERSE
-
_ IK
~ 800
~ 600
I
I
8
~
,
Cib
2K
I
r-TJ '150OC
...'"
'"~
I
IK
100
20
FIGURE 10 - CAPACITANCE
.K
r::::Vcr 2S0V
z
10
IC. COLLECTOR CURRENT (AMP)
FIGURE 9 - COLLECT9R CUTOFF REGION
~
~ V25 0 C
o. I
10K
~
-
Iclla·3
•
IC. COLLECTOR CURRENT (AMP)
~
0.3
0.5 0.7
I
lB. aASE CURRENT (AMP)
o. 5
,..".
-
O. 6
-"
TJ· 150 0 C/r
f-
TJ=-SS~
I
~
i'...
o. 6
Ic/lB = 3
~o
\
\
O. 7
II
II
I. 2
\
FIGURE 8 - COLLECTOR·EMITTER
SATURATION VOLTAGE
FIGURE 7 - BASE·EMITTER SATURATION VOLTAGE
I.
1\12A
r-
I'-.
8
1'.
0.5 0.7
i\
\
!\
1\
f5.;, o. a
aA
5A
\3A
!::
,,~
VCE SV
5
0.2
IC· I A
~
i
7
1\
o
-SSoC
0
I. 6
w
co
......... ~ISOOC
0
•
TJ·25 0 C
~
0
0.2
0.5
50 I
2
5 10 20
I
VR. REVERSE VOLTAGE (VOLTS)
II
'TJ
~ 2;O~
MJE13008,MJE13009
TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
LOAD LINE DIAGRAMS
CIRCUIT
SERIES SWITCHING
REGULATOR
24A - - -. -
"'\
Turn-On (Forward Bias) SOA
't""'" ton.s::;; 10 Ils
\
~TC·l000C~
~
a
A
TIME DIAGRAMS
12A
2
,
Duty Cycle'" 10%
PO=4000W@
'~350V
1
Ie
Turn-Off (Reverse Bias) SOA
1.5 V " VBE(off) " 9.0 V
........_L-_~DUty Cycle ~ 10%
~
o
u
ll;lO:f
Tlmo
VeE
Vee
700 VG)
Collector Voltage
Notes:
i'i
:;
~
o
N
In
IZ
w
IC
-
W
a:
a:
"«
u
>
I~
o
:J
.-!--
\
Ie
'-'"""
veE
TIME
TIME 20 ns/DIV
4-608
NPN
PNP
MJE15028MJ£15029
MJE15030MJElS031
Advance Irn:folPlI1Ol.atiion
8AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
· .. designed for use as high·frequency drivers in audio amplifiers.
•
DC Current Gain Specified to 4.0 Amperes
hFE =40(Min) @ IC =3.0 Adc
= 20(Min) @ IC = 4.0 Adc
•
Coliector·Emitter Sustaining Voltage VCEO(sus) = 120 Vdc (Min) - MJE15028, MJE15029
= 150 Vdc (Min) - MJE15030, MJE15031
120-150 VOLTS
50 WATTS
•
High Current Gain -:- Bandwidth Product
t-r =30 MHz (Min) @ IC = 500 mAdc
o ; O·220AB Compact Package
o TO·55 Leadform Also Available
MAXIMUM RATINGS
Symbol
MJEI5028
MJE15029
MJEI5030
MJEI5031
Unit
VeEO
120
150
Vdc
Collector-Base Voltage
Vee
120
150
Vdc
Emitter-Base Voltage
VEe
Rating
Collector· Emitter Voltage
Collector Current -- Continuous
Peak
Ie
Base Current
Ie
Total Power Dissipation
@Te=250e
Po
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tst9
..
5.0
.
.
..
8.0
16
~
.
..
2.0
50
0.40
~-65
to +150 ______
Vdc
Characteristic
I
I
Symbol
ROJe
I
I
Max
2.5
I
I
-lot-
Adc
LJ
..i
Watts
w;oe
SECT A·A
o,e
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
tu
Adc
Unit
°e/W
l-!-R
-11-J
BASE
-I
STYLE I:
PIN I.,
2.
3.
4,
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
.!!J!! 15:11
-4B .9.65
~.
0
.~
4,06
0,64
3,61
MAX
15,75
10,29
4,82
0.89
3.73
2.67
3.30
0,56
r:+tT
+
+
--t. &~} 'fIT7
r-P9
K
4.N
0
R
S
T
u
V
Tf4
-j.17
4.83
2.54
2.04
1.14
5.97
0.76
1.14
5.33
3.04
2.79
1.39
6,48
1.27
INCHES
MIN MAX
0,595
0.380
0,160
0.025
0.142
0.095
O.11D
0.014
~,:~ ~
0.120
0,080
0,045
0,235
0.030
0.045
TO·220AB
..
.
chang~
without notice •
4-609
0,02~_
~
0.045 ~
0050
CASE 221A.Q2
'
This is advance information and specifications
are subject to
0,620
0,405
0190
0,035
0.147
0,105
0,130
0110
0055
0.255
0,050
MJE15028,' MJE15030 NPN/MJE15029, MJE15031 PNP
ELECTRICAL CHARACTERISTICS ITC • 2S o C unless otherwise noted)
I
Characteristic
Symbol
Min
Max
120
ISO
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC' 10 mAde, IB • 0)
Collector Cutoff Current
mAde
ICEO
-
MJE1S028, MJE1S029
MJE1S030, MJE1S031
IVCE • 120 Vde,IB' 0)
IVCE' ISO Vde, lB' 0)
Collector Cutoff Current
•
Vde
VCEOlsus)
MJE1S028, MJE1S029
MJE1S030, MJE1S031
ICBO
MJE1S028, MJE1S029
MJE1S030, MJE1S031
IVCB' 120 Vde,IE' 0)
IVCB' lS0 Vde,IE' 0)
Emitter Cutoff Current
0.1
0.1
lEBO
/.lAde
-
10
10
-
10
40
40
40
20
-
"Ade
IVBe • 5.0 Vde. IC • 0)
ON CHARACTERISTICS II)
OCCurrent Gain
(lC • 0.1 Ade, VCE
(lc • 2.0 Ade, VCE
(lc • 3.0 Ade, VCE
(lc • 4.0 Ade, VCE
-
hFE
•
•
•
•
2.0
2.0
2.0
2.0
Vde)
Vde)
Vde)
Vde)
DC Current Gain Linearity
Typ
2
3
hFE
IVCE From 2.0V to 20V,IC From O.lA to 3A)
INPN TO PNP)
Collector-Emitter Saturation Voltage
VCEIs.t)
-
O.S
Vde
VBElon)
-
1.0
Vde
(lC' 1.0 Ade, IB • 0.1 Ade)
Base-Emitter On Voltage
(lC' 1.0 Ade, VCE • 2.0 Vde)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
(lC' SOO mAde, VCE • 10 Vde, f tes! ' 10 MHz)
11 )Pulse Test: Pulse Width
12lfT
0
~
300
#l5,
Duty Cycle
~
2.0%.
I hfe 1° f,el'
4-610
-
-
MPS -U01 (SILICON)
MPS- U01A
!
NPN SILICON ANNULAR
TRANSISTORS
... designed for complementary symmetry audio circuits to 5 Watts
output.
NPN SILICON
AUDIO TRANSISTORS
.. Excellent Current Gain Linearity - 1.0 mAdc to 1.0 Adc
.. Low Collector-Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 1.0 Adc
•
.. Complements to PNP MPS-U51 and MPS-U51A
.. Uniwatt Package for Excellent Thermal Properties 1.0 Watt @ T A = 25 0 C
MAXIMUM RATINGS
Symbol
MPS-UOI
MPS-UOIA
Unit
VCEO
30
40
Vdc
Collector-Base Voltage
VCB
'40
50
Vdc
Emitter-Base Voltage
VEB
5.0
Collector Current - Continuous
IC
2.0
Adc
Total Power Dissipation @ T A = 25o~
Derate above 2SoC
Po
1.0
8.0
Watt
mW/oC
Total Power Dissipation @ T C = 2SoC
PD
10
80
mW/oC
-55'0+150
°c
Rating
Collector-Emitter Voltage
Derate above 25°C
Operating and Storage Junction
TJ.Ts'g
Vdc
Watts
-II--J
STYLE 1:
PIN 1. EMITTER
2. SASE
3. COLLECTOR
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ReJC
12_5
°C/W
Thermal Resistance, Junction to Ambient
R9JA
125
°C/W
Characteristic
Unlwatt packages can be To-5 lead formed by adding -5 to the d9vi~e title and tab formed for
flush mountrng by adding -1 to the device titls.
DIM
MILLIMETERS
MAX
MIN
A 9.14
9.53
S
6.60
1.24
C 5.41
5.66
0
0.38
0.53
F 3.18
3.33
G
2.54 SSC
H
3.94
4.19
J
0.36
0.41
K 12.01 12.70
L 25.02 25.53
N
5.08 SSC
n 2.39 2.69
R 1.14
1.40
INCHES
MIN
MAX
0.360 0.315
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 SSC
0.155 0.165
0.014 0.016
0.415 0.500
0.985 1.005
0.200 SSC
0.094 0.106
0.045 0.055
CASE 152-02
4-611
MPS-U01,MPS-U01A
ELECTRICAL CHARACTERISTICS IT A '25°C unless otherwIse noted I
Characteristic
Symbol
Min
Max
30
40
-
40
50
-
50
-
-
0.1
-
0.1
55
-
60
-
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage (11
(lC
MPS-UOI
MPS-UOIA
Collector-Base Breakdown Voltage
IIC
= 100 "Ade,
= 100 "Ade,
Vde
BVCBO
MPS·UOI
MPS·U01A
IE = 01
Emitter·Base Breakdown Voltage
(IE
Vde
BVCEO
= 10 mAde, IB = 01
BVEBO
Vde
Ie = 01
Collector Cutoff Current
IVCB = 30 Vde, IE = 01
IVCB = 40 Vde, IE
/JAde
ICBO
MPS·UOI
= 01
MPS·UOIA
Emitter Cutoff Current
IVBE = 3.0 Vde, IC = 01
lEBO
0.1
IJAdc
ON CHARACTERISTlCSlli
DC Current Gam
(lC = 10 mAde, VCE = 1.0 Vdel
•
(lC = 100 mAde, VCE
~
-
hFE
1.0 Vdel
50
-
VCE{sati
-
0.5
Vdc
VBElonl
-
1.2
Vde
IT
50
-
MHz
Cob
-
20
pF
(lc = 1 0 Ade, VCE = 1.0 Vdel
Collector·Emltter Saturation Voltage
(lC
= 1.0Ade,IB = 0.1
Adel
\
Base-Emitter On Voltage
(lC = 1.0 Ade, VCE = 1.0 Vdel
OYNAMIC CHARACTERISTICS
Current·Gain-Bandwldth Product
(lc = 50 mAde, VCE = 10 Vde, 1= 20 MHzl
Output Capacitance
IVCB
= 10 Vde,IE = 0, I
= 1.0 MHzl
(1)Pulse Test: Pulse Width 'S300IlS. Duty Cycle "f. 2 0%.
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - "ON" VOLTAGES
500
";;;:
...'"
ffi
1.0
r---
300
III
TJ = 250C
~
~
I---""
VBElsatl@ICIIB=10
O.B
200
-r:
VBE@VCE
'"
i!
0.6
'"
'"
~
'"
>
0.4
1.0 V
w
=>
r-
u
U
1"
Q
~
~ J
I - TJ 25 C
~CE ~ 1.0 V~C
100
>'
0.2
VCElsatl @IC/IB= 10
70
10
20
50
100
200
500
"",l-
o
50
1000
10
20
IC, COLLECTOR CURRENT 1m AI
30
50
100
200
300
500
1000
IC, COLLECTOR CURRENT ImA)
FIGURE 3 - DC SAFE OPERATING AREA
2.0
c::
'" I.
:$
~
'{
T4~,
0
7==
o. -
:: 0.5
or
=
TJ 150°C
BONOING WIRE LIMIT
THERMAL L1MIT@TC -250C
SECONO BREAKOOWN LIMIT
Q
~
0.3
8
0.2
~
There are two limitations on the power handling ability of a transistor: junction temperature and secondary. breakdown. Safe
operating area curves indicate IC-VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
I"
The data of Figure 3 is based on TJ(pk) = 150°C; TC is variable
""=~
MPS·UOI
depending on conditions. At high case temperatures, thermal
limitations wilt reduce the power that can be handled to values
less than the limitations imposed by secondary breakdown.
~
MPS'i 01A
0.1
2.0
4.0
6.0
10
20
40
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
4-612
MPS • U0·2
(SILICON)
NPN SILICON ANNULAR
AMPLIFIER TRANSISTOR
designed for general-purpose, high-voltage amplifier and
driver appl ications.
NPN SILICON
AMPLIFIER TRANSISTOR
• High Power Dissipation - Po = 10 W@TC = 25 0 C
• Complement to PNP MPS-U52
•
MAXIMUM RATINGS
Symbol
Value
Unit
VCEO
40
Vde
Collector-Base Voltage
Vca
60
Vde
Emitter-Base Voltage
Rating
Collector-Emitter Voltage
VEa
5.0
Vde
Collector Currenl - Conhnuous
IC
800
mAde
Total Power Dissipation@ T A = 25°C
PD
Derate above 2S"C
Tolal Power Dissipation@ TC
=2S
a
1.0
Watt
8.0
mW/oC
PD
C
Derate above 25°C
Ope rating and Storage JunctIon
Temperature Range
10
Watts
80
mW/"C
·C
T J • Tatg
-5510 +150
Symbol
Max
A
THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance', Junction to Case
Thermal ReSistance, JunctIon to Ambient
ELECTRICAL CHARACTERISTICS
Unit
R9JC
12_5
'C/W
R9JA
125
"C/W
(T... ;;: 2S·C unless otherwIse noted)
Characteristic
Symbol
Min
Max
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = I. 0 mAde, la = 0)
BV CEO
Collector-Base Breakdown Voltage
(IC =IOO"Ade, IE = 0)
BVcao
Colleelor Cutoff Current
(V ca = 40 Vde, IE = 0)
Vdc
40
nAde
ICBO
100
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAde, VCE = 10 Vde)
(Ie
=150 mAde,
VeE
hFE
=10 Vdc)
50
50
(lC = SOO mAde, V CE = 10 Vde)
30
Collector-Emitter Saturation Voltage
(Ie :;;; 150 mAde, Is = 15 mAde)
VCE(sat)
Base':Emitter Saturation Voltage
(Ie = 150 mAde, IS = 15 mAde)
VBE(sat)
-
-
-
OUtput Capacitance
(V CB = 10 VdC, IE = 0, I = 100 kHz)
A
300
Vde
0_ 4
G
H
VdC
1.3
J
K
L
N
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(Ie :;;; 20 mAde, VCE = 20 Vdc, (~ 100 MHz
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
(COLLECTOR CONNECTEO
TO TAB)
Vde
60
Q
IT
Cob
100
-
-
20
MHz
pF
4-613
R
MPS-U02
FIGURE 2 - COLLECTOR·EMITTER
SATURATION VOLTAGE versus BASE CURRENT
FIGURE 1 - NORMALIZED DC CURRENT GAIN
~.: r-t-
2.0 , - - " Irrrrlnr-~-rrrl"T1"r-'-rrrnnr---r-rTTTTTTI
a:;;;
wI-
Ilel;
UI~A -+-f-ttHltIIlllllr-t-+t+tifltf+-+++ttH!{
0.81--t-Ft+ltItt--+-1-++tI'lW rnA t-+t+fjrtlH--I-++I-I+Hl
t: g 0.71--t-+iH+H+f-.,-+-H-Hti'Hl--l-ll 250 rnA
"'-
\
~~~
\~~
o~
tT
~ c5 O.51-+-tl1fttHtt-+--H-H-lHt--l-+H+I+l+-1f.+++l-++H
2...:.i=~ 0.41-+-HH-I-Htt-+--H-H-HHt--l-+-1rt+l+l+--+''''I-oW±HI
! ~ 0.31-+-t-I'ttHtt-+--H-H+I\I---l-+-HIHH+--++++l-++H
~>
~~
~
> ;;Ii n.21--t--H+fI[Ift-+-H-f++Hr"'rl-l--H++Hf""-d--t-t+f+Hl
- - - VCE=10V
•
0.1
~tHt-++-IIII' I '" ",",o--t--+-l\l-tltl
0.1
1.0
10
100
0.1
"',
1-+++++tHf'. . . +++tltHt--l-1"'l-HI#tI-+++tltHl
..
LOA
0.1
1.0
IC. COLLECTOR CURRENT (rnA)
FIGURE 3 - BASE·EMITTER VOLTAGE
versus COLLECTOR CURRENT
50
~
o 0.8
/'
30
:!
w
u.
l-
~
./
0.7
o
..,zw
>
20
«
'"
~
;;;
-........."
I--
l-
e;
/f-"""
~..,
0.6
..,.
:l:
~
~
100
FIGURE 4 - CAPACITANCE versus VOLTAGE
0.9
'"~
10
lB. BASE CURRENT (rnA)
0.5
-.........,
10
1\
........
1\ Cib
...........
7.0
>
0.4
....t--.5°t
,
5.0
, 0.1
1.0
100
10
LOA
0.1
10
1.0
100
REVERSE VOLTAGE (VOLTS)
IC. COLLECTOR CURRENT (rnA)
FIGURE 5 - CURRENT·GAIN·BANDWIDTH PRODUCT
FIGURE 6- ACTIVE REGION DC SAFE OPERATING AREA
versus COLLECTOR CURRENT
"N
2.0
1000
'"
t'"
:'\
700
::>
;;;: 1.0
e
f
.5
500
I-
:z:
l-
e
~
z
:i
V
300
z
«
'"
200
Iffi
'"
..,'"::>
J:'
100
/
VCE=20V
~
0.7
0.5
e
~
'\.
0.3
'\
e
~ 0.2 t - - -
I-- _
/
1.0
'\.
'"
\
V
~
a'"
I
0.1
10
100
IC. COLLECTOR CURRENT (rnA)
1.0P.
- - - Thermal limitation
- - Secondary Breakdown limitation
1.0
2.0
'\.
I I I 11111' I
3.0'
5.0
7.0
10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-614
"
30
50
MPS-D03
MPS-UD4
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS
NPN SILICON
AMPLIFIER
TRANSISTORS
... designed for horizontal drive applications, high·voltage linear
amplifiers, and high·voltage transistor regulators.
•
High Collector· Emitter Breakdown Voltage BVCEO = 180 Vdc (Min) @ IC = 1 mAdc - MPS·U04
e
Low Coliector·Emitter Saturation Voltage VCE(sat) = Q.5 Vdc (Max) @ IC = 200 mAde
•
.. High Power Dissipation Po = 10 W @TC = 25 0 C
MAXIMUM RATINGS
Rating
Symbol
MPS·U03
MPS·U04
Unit
VCEO
120
180
Vdc
Collector-Base Voltage
VC8
120
180
Vdc
Emitter-Base Voltage
VE8
<'
Collector Current
IC
1
Adc
Total Power Dissipation @ T A - 25°C
Derate Above 2SoC
Po
1
8
Watts
mW/oC
Total Power Dissipation @ T C - 2SoC
Po
10
80
Watts
mW/oC
TJ, T stg
-55to+150
°c
-
260
°c
Collector-Emitter Voltage
Derate Above 25°C
Operating and Storage Junction
Vdc
o
Temperature Range
Solder Temperature, 1/16" From Case
for 10 Seconds
STYLE 1:
PIN 1. EMITIER
2. BASE
3. COLLECTOR
(COLLECTOR CONNECTED
TO TAB)
THERMAL CHARACTERISTICS
• Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
ROJA
125
Thermal Resistance, Junction to Case
ROJC
12.5
°CIW
uC/W
DIM
MilLIMETERS
MIN
MAX
A
9.53
B
1.24
C
D
5.66
0.53
INCHES
MIN
MAX
G
H
K
L
N
Q
R
CASE 152·02
Annular Semiconductors Patented by Motorola Inc.
4-615
MPS-U03, MPS-U04
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I
Characteristic
Unit
Min
Max
120
180
-
120
180
-
5.0
-
-
0.1
0.1
hFE
40
-
-
VCE(s.t)
-
0.5
Vde
VBE(on)
-
1.0
Vde
35
-
MHz
-
12
pF
-
110
pF
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIc = 1.0 mAde,lB =0)
Vde
BVCEO
MPS·U03
MPS·U04
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
Vde
BVCBO
MPS·U03
MPS·U04
Emitter-Base Breakdown Voltage
BVEBO
-
Vde
(IE = 100 "Ade,IC = 0)
Collector Cutoff Current
•
"Ade
ICBO
(VCB = 100 Vde, IE = 0)
(VCB = 150 Vde, IE = 0)
MPS·U03
MPS'U04
ON CHARACTERISTICS (1)
DC Current Gain
IIc = 10 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
IIc = 200 mAde, I B = 20 mAde)
Base-Emitter On Voltage
IIc = 200 mAde, VCE = 1.0 Vdc)
DVNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 50 mAde, V CE = 20 Vdc, I
IT
=20 MHz)
Output Capacitance
Cob
(VCB = 10 Vde, IE
=0, I = 100 kHz)
Input Capacitance
(VeE = 0.5 Vde, IC
Cib
=0, I = 100 kHz)
-
(1) Pulse Test: Pulse Width .. 300 "s, Duty Cycle .. 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 2 - CAPACITANCE
FIGURE 1 - CURRENT -GAIN - BANDWIDTH PRODUCT
'100
~ 300
.
10
~
~
200
'"f
:z:
:;
~
z
:i
z
C
100
70
---
VCE' 20V
TJ=250 C
50
~
30
-
~ 20
...
r- .......
w
~ib
TJ= 250 C
I
~ 10
~ 7.0
~ 5.0
<;I
1\
~ 50
,; 3.0
.'"
Cob- I-
-
2.0
a:
a:
.t: 30
10
20
30
50
10
100
IC, COLLECTOR CURRENT (mA)
4-616
1.0
0.3 0.5 OJ 1.0
2.0 3.0 5.0 1.0 10
20 30 50 10 100
VR, REVERSE VOLTAGE (VOLTS)
200 300
MPS-U03, MPS-U04
TYPICAL CHARACTERISTICS (Continued)
FIGURE 3 - DC CURRENT GAIN
FIGURE 4 - "ON" VOLTAGE
500
10
--
z
.
'"
-
2S'C
-'=
100
ii:l
-
TJ = ISO'C
200
~
FIGURE 6 - TEMPERATURE COEFFICIENTS
1.6
e.>
u
-
VBE(,n)@VCE = 10 V
FIGURE 5 - COLLECTOR SATURATION REGION
I
,/'
VCEI",)@IC/IB = 10
so
2.0
1.0
. /~
::: 10
>
>-
\
,,~
I II III
10
'"
~
c
,
@ ICIlB
-'-:_.L~ :...--
0.6
w
so
u
II 1111
II 1111
TJ =2S'C
300
-
100'C
I
2~
40
so
10- 3=--0.4
REVERSE
_
FORWARD
2S'C
-02
,
+02
+0.4
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-617
+0.6
MPS-U03, MPS-U04
TYPICAL CHARACTERISTICS (Continued)
FIGURE 9 - THERMAL RESPONSE
1.0
O. 7 0 _ 0.5
0.5
~~
0.3 -0.2
ffi~
!E~
w~
o.
0.1
,- 'ii.05
~~ 0.07
;:-~
~
"
Single Pulse
~~~ 0.05
-;u;
....
--
-
-
b:i!!!iii
~; 0.2
- - Z.JCIIi • 'Iii R.JC
ffiJl --
SmglePulse
•
I
•
D.O'
0.02
Duty Cycle, 0:::: 11/12
0.'
0.05
05
0.2
1.0
70
50
.0
t,
20
50
TIME (msl
FIGURE 10 - ACTIVE REGION SAFE'()PERATING AREA
.500
.s....
~
B
100",_
700
500
1m,
Tc-250e
200
'"o
TA" 250e
~
100
8
0
~
0
10
I 52
~
-'\.
di'
'\
de
-
_ Bonding Wire limit
---Thermal limit Smgle Pulse
--Second Breakdown limit
(Applies Below Rated VCEO)
10
~,
10
30
50
70
100
100
.00
200
500
1.0k
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 11 - POWER DERATING
1.0
~
~ 0.8
u..
to
""
---;:::s
0.6
Derating
z
;::
;;:
~
-~
I
.
I
~
Deratmg
~
"" ""
0.4
'"
3
:r 0.2
f'....
"-
--f-20
40
--
Second Breakdown
"" "
'"ot;
«
10k
PULSE TRAIN SHOWN
REAO TIME AT I.
TJlpk) - Te· Plpk) R.Jell)
S.O k 10 k
20 k
50 k 100 k
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown, Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i,e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse I.mits are valid for duty cycles to 10% but must be
derated when T C ;;:. 250 C. Second breakdown Iimitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by uSing the appropriate curve on
Figure 11,
T J(pk) may be calculated from the data in Figure 9.
At high case temperatures, thermal limitatIons will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown.
I
1000
::<
o CURVES APPLY FOR POWER
-t~J
1'"
ZOJAII)' 'II) R.JA
R6JA = 125 0CIW Max
P(pk)
0.03 "'" 0.02
0.01
0.02
0.0
ROJC = 12.5 0CIW Max
60
100
80
110
TC. CASE TEMPERATURE lOCI
4-618
"'-
"" "
140
.60
MPS .. U05 (SILICON)
MPS-UOG
NPN SILICON
AMPLIFIER TRANSISTORS
NPN SILICON ANNULAR
AMPLIFIER TRANSISTORS
· .. designed for general·purpose, high·voltage amplifier and driver
applications.
•
o High Collector· Emitter Breakdown Voltage BVCEO = 60 Vdc (Min) @ IC = 1.0 mAde - MPS-U05
80 Vdc (Min) @ IC = 1.0 mAde - MPS-U06
•
High Power Dissipation - PD = IOW@TC=250C
•
Complements to PNP MPS-U55 and MPS-U56
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MPS·U051 MPS·U06
I
80
I
80
Unit
. Vdc
VCEO
60
Collector-Base Voltage
VCB
60
Emitter-Base Voltage
VEB
4.0
Vdc
IC
2.0
Adc
Po
1.0
8.0
mW/oC
Po
10
80
Watts
mW/oC
TJ,TsI9
-5510 +150
°c
Collector Current - Continuous
Total Power Dissipation @ T A
= 2SoC
Derate above 25°C
Total Power Dissipation @ T C
= 2SoC
Derate above 2SoC
Operating and Storage Junction
,~C:-=- ~ "1ft'
rrt~ =:rf, III
Vdc
J
Watt
0--
21
I
Jj
I~ G ~
I---.4-N
Temperature Range
PIN~. ~~~~TER
J.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance. Junction to Case
ROJC
12.5
°C/W
Thermal Resistance, Junction to Ambient
ROJA
125
°C/W
Characteristic
--ILJ
STYLE 1:
COLLECTOR
MILLIMETERS
DIM MIN
MAX
INCHES
MIN
MAX
A 9.14
9.53
B 6.60
1.24
e
5.41
5.66
o
0.38
0.53
F
3.18
3.33
G
2.54 BSe
H 3.94
4.19
J
0.36
0.41
K 12.01 12.70
L 25.02 25.53
N
5.08 BSe
Q
2.39
2.69
R 1.14
1.40
0.360 0.315
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.1008se
0.155 0.165
0.014 0.016
0.475 0.500
0.985 1.005
0.200 BSe
0.094 0.106
0.045 0.055
CASE 152-02
4-619
MPS-U05, MPS-U06
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
I
I
Characteristic
Symbol
I
Min
Typ
Max
SO
BO
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde,lB = 0)
Vde
BVCEO
4.0
-
-
-
-
100
100
80
SO
125
100
55
-
-
0.4
MPS-U05
MPS-UOS
Emitter-Base Breakdown Voltage
(IE = 100 "Ade, IC = 0)
BVEBO
Collector Cutoll Current
(VCB = 40 Vde, IE = 0)
(VCB = SO Vde, IE = 0)
Vde
nAde
ICBO
MPS-U05
MPS-U06
ON CHARACTERISTICS
•
DC Current Gain (11
(Ie = 50 mAde, VCE = 1.0 Vdcl
(Ie = 250 mAde, VCE = 1.0 Vde)
(Ie = 500 mAde, VCE = 1.0 Vde)
-
hFE
-
Collector-Emitter Saturation Voltage( 11
(lC = 250 mAde,lB = 10 mAde)
(I e = 250 mAde, I B = 25 mAde)
VCE(sat)
-
0.18
0.1
Base-Emitter On Voltage (11
(lC = 250 mAde, VCE = 5.0 Vde)
VBE(on)
-
0.74
1.2
Vde
IT
50
150
-
MHz
Cob
-
S.O
12
pF
Vde
-
SMALL·SIGNAL CHARACTERISTICS
Current·Gain-Bandwidth Product (If
(lC = 250 mAde, VeE = 5.0 Vde, 1 = 100 MHz)
Output Capacitance
(VCB
= 10 Vde,
IE
= 0, I = 100 kHz)
(1 )Pulse Test: Pulse Width
~300
jJs, Duty Cycle S:2.0%.
FIGURE 1 - DC CURRENT GAIN
30 0
200
0
FIGURE 2 - "ON" VOLTAGES
0
·t~EI,I, OVd,
TJ = 25°C
f-U,,1
IIIIIIII
L1.i+ttr: V
,
........
~
VBE{on)@ VCE
0
~
5 0 We
--f--
4
0
.....
V:EI~~' ~ lei,,: ~',~'
8
2
VCEfSdt)@ICIIB:l0
0
J0
50
10
50
100
200
10
500
20
50
Ie. COLLECTOR CURRENT (mAl
FIGURE 3 - DC SAFE OPERATING AREA
2 . 0 r - - - , - , - , - " ' , . . , - r n - - , -........-rTTTl
10
20
50
100
Ic. COLLECTOR CURRENT (mAl
200
'00
FIGURE 4 - CURRENT -GAIN-BANDWIDTH PRODUCT
~ 3D 0
I---'"
~
i
"-
/'
20 0
::::
\
c
~
100
;:\
~
10
~
5
g
O.O~';;0--:;2'::.0-L.L-,J5;;-0J...L.I..lflO;---!:20;-.L....L.5f.;0.LI~100
a
,t:
0
\0
0
VeE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
transistor: junction temperature and second breakdown. Safe
operating area curves indicate Ie - VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
not be su.bjected to greater dissipation than the curves indicate.
VCE :50Vde
lirte
10
20
5'
100
200
500
IC. COllECTOR CURRENT (rnA)
The data 01 Figure 3 is based on T J(pk)
= 150o c; T C is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
4-620
MPS ·0:07 (SILICON)
NPN SILICON
AMPLIFIER TRANSISTOR
NPN SILICON ANNULAR
AMPLIFIER TRANSISTOR
•
. . . designed for general-purpose, high-voltage amplifier and driver
applications.
•
High Collector-Emitter Breakdown Voltage BVCEO = 100 Vde (Min) @ IC = 1.0 mAde
•
High Power Dissipation - PD = 10 W@ TC = 25 0 C
•
Complement to PNP MPS-U57
F
L
MAXIMUM RATINGS
Symbol
Value
Unit
100
= 2SoC
VeEO
VeB
VEB
Ie
Po
2.0
1.0
8.0
Vdc
Vdc'
Vdc
Adc
Watt
mW/oe
= 250 e
PD
10
80
Watts
mW/oe
TJ,Tstg
-55 to +150
°e
Rating
Collector-Emitter Voltage
Collector· Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipaton. @ T A
100
4.0
Derate above 25°C
Total Power DIssipaton@Te
Derate above 2SoC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
12.5
°CIW
Thermal Resi~nce. Junction to Ambient
ROJA
125
°e/w
Characteristic
D
JJ
[:±
'G'
N
MILLIMETERS
DIM MIN
MAX
A
B
e
0
F
G
H
J
r-JL
c-ir~
Q
R
9.14
9.53
6.60
7.24
5.41
5.66
0.38
0.53
3.18
3.33
2.54 BSC
3.94
4.19
0.36
0.41
12.70
25.53
BSe
2.69
1.14
1.40
$
--II--J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
INCHES
MIN
MAX
0.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSe
0.155 0.165
0.014 0.016
0.475 0.500
0.985 1.005
0.200 BSe
0.094 0.106
0.045 0.055
CASE 152-02
MPS-U07
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)
Characteristic
Min
Typ
Max
Unit
.BVCEO
100·
-
-
Vde
BVEBO
4.0
-
-
Vde
ICBO
-
-
100
nAde
60
30
-
110
65
33
-
-
0.18
0.1
0.4
VBE(onl
-
0.76
1.2
Vdc
fT
50
150
-
MHz
Cob
-
6.0
12
pF
OFF CHARACTERISTICS
Collector-Emitter Breakdown' Voltage (1)
(lC~1.0mAde,IB~01
Emitter-Base Breakdown Voltage
(IE ~ 100"Ade,IC ~ 01
Collector Cutoff Current
(VCB = 80 Vde, IE = 01
ON CHARACTERISTICS
•
DC Current Gain (11
(I C = 50 mAde, V CE = 1.0 Vdel
(lC = 250 mAde, VCE = 1.0 Vdel
(IC = 500 mAde, VCE = 1.0 Vdel
Collector-Emitter Saturation Voltage (11
(lC = 250 mAde, IB = 10 mAdel
(lC = 250 mAde, IB = 25 mAde 1
Vde
VCE(satl
Base-Emitter On Voltage (11
(lC = 250 mAde, VCE = 5.0 Vdcl
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (11
(lc = 250 mAde, VCE =5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
-
hFE
= 0, f = 100 kHzl
-
Pulse Width ~300 ,",5, Duty Cycle~2.0%.
(11Pulse Test:
FIGURE 1 - DC CURRENT GAIN
200
FIGURE 2 - "ON" VOLTAGES
10
~CE=1.0VdC
09
TJ=25 0C
IIII
TJ·2SOC
1111
0.8
I
I
I
I
I-
VBE(sat}@lclla"10
0
0
0
-
i
07
~
[15
S
04
=>
03
......
......
VSE(on!@VCE=SOVdc
06
§!
\
02
0
~
VCE(sal)@IC/lB=10
1
20
501.0
10
5010100
20
200
o
'00
1.0
SO
2.0
Ie. COLLECTOR CURRENT (rnA)
~ o.
~
""
/"
,
II
2-TJ=150oC
1l
g
O. 1 ~.~
~ 0.0
,
I
-
:j 0.0 2
1.0
Second Breakdown llmlled
Bonding Wire Limited
Thermal Llmllatlons@Te=25OC
Applicable To BVCEO
200300 SOO
2.0
'.0
10
~
\
I'-.
Vce- S.OVdc
TJ=2S oC
II
I II III
,
QO 1
0.00
100
~ 300
0
1. 0
....
C
50
FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT
2.0
!'"
20
Ie. COLLECTOR CURRENT (rnA)
FIGURE 3 - DC SAFE OPERATING AREA
,.
10
20
50
~
100
VeE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two· limitations on the power handling ability of a
transistor: junction temperature and second breakdown. Safe
operating area curves indicate I C - VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
0
3 S.0 7.0
II
10
20
5010100
200
500
Ie. COLLECTOR CURRENT (mAl
The data of Figure 3 is based onTJ(pkl = 150 0 C; TC is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
not be subjected to greater dissipation than the curves indicate.
4-622
MPS '.. iB 1I)
(SILICON)
NPN SILICON
HIGH VOLTAGE
AMPLIFIER
TRANSISTOR
NPN SILICON ANNULAR TRANSISTOR
... designed for high·voltage video and luminance output stages in
TV receivers.
"
High Coliector·Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) @ IC = 1.0 mAdc
"
Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.75 Vdc (Max) @ IC = 30 mAdc
"
Low Collector·Base Capacitance Ccb = 3.0 pF (Max) @ VCB = 20 Vdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
Collector-Base Voltage
VCB
300
Vdc
Emitter-Base Voltage
VEB
6.0
Vdc
Collector-Emitter Voltage
Collector Current
~
Continuous
Total Power Dissipation @ T A = 2SoC
IC
500
mAde
Po
1.0
8.0
Watt
mW/oC
Po
10
80
Watts
mW/oC
TJ.T st9
-55'0+150
°c
Derate above 25°C
Total Power Dissipation
Derate above 2SoC
@
TC = 2SoC
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
12.5
°C/W
Thermal Resistance, Junction to Ambient
ROJA'
125
°C/W
D-
-H--J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
·0
F
G
H
J
K
L
N
Q
-
R
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
9.14
9.53
6.60
7.24
5.41
5.66
0.3B
0.53
3.18
3.33
2.54 BSC
3.94
4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 BSC
2.39
2.69
1.14
1.40
0.360 0.315
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSC
0.155 0.165
0.014 0.016
0.475 0.500
0.9B5 1.005
0.200 USC
0.094 0.106
0,045 0.055
CASE 152·02
4-623
MPS-U10
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristics
Svmbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (1)
(lC = 1.0 mAdc, IB = 0)
BVCEO
300
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100l'Ade, IE = 0)
BVCBO
300
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 I'Ade, IC = 0)
BVEBO
6,0
-
Vde
Collector Cutoff Current
(VCB = 200 Vde, IE = OJ
ICBO
-
0.2
I'Ade
Emitter Cutoff Current
(VBE = 6.0 Vde, IC = 0)
lEBO
-
0.1
I'Ade
25
OFF CHARACTERISTICS
-•
ON CHARACTERISTICS
DC Current Gain
(lc = 1_0 mAde, VCE = 10 Vde)
-
hFE
40
-
Collector-E mitter Saturation Vol~age
(lC = 30 mAdc, IB = 3.0 mAde)
VCE(sat)
-
0.75
Vde
Base-E mitter On Voltage
VBE(onJ
-
0.B5
Vde
Current-Gain-Bandwidth Product (1)
(lC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
t,-
46
-
MHz
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f = ~.O MHz)
Ceb
-
3.0
pF
(lC = 10 mAde, VCE = 10 Vdc)
40
(lC = 30 mAde, VCE = 10 Vdc)
(lC = 30 mAde, VCE = 10 Vde)
DYNAMIC CHARACTERISTICS
(1)Pulse Test: Pulse Width ~300 ~s. Duty CycleS 2%.
FIGURE 1 - DC SAFE OPERATING AREA
600
500
40 0
"-
f"".
-,
30 0
.....
......
i'-
0
.........
I'
~t--
0
f--f--.
f--.
-
1
30
15
-
Second Breakdown Limited
Bonding Wire Limited
- Thermal Limitations Te 25'e
II
II
20
......
The Safe Operating Area Curves indicate IC-VCE limits below
which the device will not enter second breakdown. Collector
\
load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J, power-temperature derating must be observed for both steady state and pulse power conditions.
.....
" ,1"\
30
50
70
100
150 200
VeE, eOLLEeTO~·EMITTER VOLTAGE (VOL TSJ
I"
300
4-624
MPS-Ul0
FIGURE 2 - DC CURRENT GAIN
200
I
VCE = 110 Vdc
z
:;;:
.T}=+I~I--
100
to
....
~
I---
0:
a
<>
"
~
0
30
20
1.0
--
---
I
............
!----
I'-.
........ t-.....
-
~
25 0 C
~
I--
-
I-l -I-
I--
L-- I--Sr C
I"I'-
'\.
\
1\
I
'\
I
2.0
3.0
5.0
10
7.0
30
20
50
70
100
IC. COLLECTOR CURRENT (rnA)
FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 3 - CAPACITANCES
0
10 0
0
0
0
Cob
O
t-....
l...-
V
0
ot---
0/
0
0
Ccb......
2. 0
1.0
0.2
V
T"""'-
1.0
2.0
5.0
10
TJ=25 0 C
i"-
r0.5
II
20
50
100
0
2.0
200
5.0
FIGURE 5 - "ON" VOLTAGES
1. 0
TJ=25 0 C
o. 8
~
O. 6
I
VBE@VCE=IOV
w
to
;.
" 0.4
II
)
>
,;
0.2
j...--
VCE{sat) @Icils = 10
o
1.0
"'"r"
20
Ie. CO LLECTO R CU RRENT (rnA)
VR. REVERSE VOLTAGE (VOLTS)
"
2:
10
2.0
3.0
5.0
10
20
IC. COLLECTOR CURRENTlmA)
4-625
30
50
100
50
100
MPS"Ul0
APPLICATIONS INFORMATION
The MPS-Ul0 is primarily designed for use in the R, G, and B output
stages of color television receivers and with a high BVCEO. it can
supply the video amplitude requirements of any known system.
dissipator of 40.5 0 CIW, or lower, will be required. A black anodized 0.020" thick aluminum plate measuring 1" x 2" can be folded
into a channel shape and formed with "feet" to snap into a printed
circuit panel for support. This will provide the safety factor.
Used as a color difference output, where drive and bandwidth
requirements are less severe, the MPS-U10 can be operated with
27 k ohm load resistors (worst-,case dissipation would then be only
0.6 Watts). The device can, therefore, be operated as a colordifference output without any heat radiator in ambient temperatures
to 150·0.6 (1251 = 7S o C.
In addition the safe operating area of the MPS-Ul0 will fill the
requirements of the luminance output function with a total
equivalent load of 5.0 kilohms. Worst-case dissipation can reach 3
Watts, this requires a total R6JA of 150-65/3 = 28.4°C/W. This
28.4°C/W means a heat dissipator of 15.90 C/W, (approximately 2"
x 3" aluminum plate) will be required .
The low feedback capacitance provides good video bandwidth with
modest drive current requirements. Typical drive is from an
emitterMfollower with a 4.7 k emitter-resistor operated from a
2Q..Volt supply. It will, therefore, be operable directly from a
number of available chroma demodulators. The low output capac-
itance of this device adds little to the total load capacitance, allowing improved bandwidth f~r a given collector load resistor. Two
typical applications for the MPS-UlO are shown in Figures 6 and 7.
Device dissipation will reach approximately 1.6 Watts under
worst-case signal conditions and some heat sinking is required. At
an operating ambient temperature of 65 0 C, a thermal resistance
R6JA =150-65/1.6 = 530 C/W will be required. The junction-tocase thermal resistance,RSJc,of the device is 12.50 CIW, thus a heat
•
FIGURE 6 - MPS-U10AS RGB OUTPUT WITH RGB INPUT
+2&0 Vdt
0----....,---..,.---,
9 GREEN
t,IC1326
11 RED
CHROMA
DEMODULATOR
H>---1r--......---+--t-1...
13 BLUE
41k
4H
,so
330
680
330
680
330
L--==:t=~=j:=~b---o+20 v
FIGURE 7 -MPS-Ul0AS RGB OUTPUT,MATRIXING COLOR
DIFFERENCE AND LUMINANCE INPUTS
1 G-Y
MC1328
CHROMA
DEMODULATOR
IJ..~2~R:::-Y~~t...j_~~+=r~-4-r...,...,..,.,.-;:::t
'-D...!.!.'-.
4S-Y
4-626
MPS • 031 (SILICON)
NPN SILICON ANNULAR RF TRANSISTOR
3.SW -27 MHz
... designed for use in Citizen· Band and other high·frequency com·
munications equipment operating to 30 MHz. Higher breakdown
voltages allow a high percentage of up'modulation in AM circuits.
This device is designed to be used with the MPSBOOO driver and the
MPS8001 RF oscillator.
RF POWER OUTPUT
TRANSISTOR
o Output Power = 3.5 W (Mini
@
NPN SILICON
VCC = 13.6 Vdc
•
o Power Gain = 11.5 dB (Mini
o High Collector· Emitter Breakdown VoltageBVCES;;' 65 Vdc
o DC Current Gain Linear to 500 mAdc
F
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current --- Continuous
Total Power Dissipation @ T A
= 2SoC
Symbol
Value
VCES
65
Vdc
VEB
3.0
Vdc.
IC
500
mAde
Po
1.0
Watt
mW/oC
Derate above 2SoC
Total Power Dissipation@ TC = 25°C
Derate above 2SoC
8.0
Po
10
Unit
80
Watt
mW/oC
TJ,Tstg
-55 to +150
°c
Symbol
Max
Unit
Thermal Resistance. Junction to Case
ReJA
12.5
°C/W
Thermal Resistance, Junction to Ambient
ReJA
125
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
o
-l1-J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
OIM
,
MILLIMETERS
MAX
MIN
9.14
9.53
6.60
7.24
&.41
5.66
0.38
0.53
3.18
3.33
2.54 ase
3.94
4.19
0.36
0.41
12.07 12.70
L 25.02 25.53
fl
5.08 asc
Q
2.69
2.39
1.14
1.40
R
A
B
e
0
F
G
H
J
K
INCHES
MIN
MAX
0.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSe
0.155 0.165
0.014 0.016
B
O.
CASE 152·02
4-627
~
0.106
0.055
MPS-U31
ElECTR ICAl CHARACTER ISTICS (TA = 25 0 C unless otherwise noted.)
I
Characteristic
I
Symbol
Min
Ty!>
Max
Unit
Collector-Emitter Breakdown Voltage (1)
IIC = 150 mAde, VBE = 0)
BVCES
65
-
-
Vde
Emitter-Base Breakdown Voltage
liE = 1.0 mAde, IC = 0)
BVEBO
3.0
-
-
Vde
ICBO
-
-
0.01
mAde
Common·Emitter Amplifier Power Gain
(Pout = 3.5 W, Vce = 13.6 Vdc, i = 27 MHz)
GpE
11.5
-
-
dB
Output Power
(Pin = 250 mW, VCC: 13.6 Vde, f = 27 MHz)
Pout
3.5
-
-
Watts
'1
-
70
-
%
-
-
85
-,
%
Off CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ON CHARACTERISTICS
•
DC Current Gain (2)
IIC = 100 mAde, VCE
= 10 Vde)
DVNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12 Vde, IE = 0, f = 1.0 MHz)
fUNCTIONAL TEST (Figure 11
Collector Efficiency (3)
(Pout = 3.5 W, VCC = 13.6 Vde, f
= 27
MHz)
Percentage Up-Modulation (4)
(f = 27 MHz)
(I) Pulsed thru a 25 mH Inductor
(2) Pulse Test: Pulse Width ~300 !,s,
Duty Cycle ~2.0%.
(3)
Jl
= RF Pout •• 100
(VCC) IIC)
(4)
Percentage Up·Modulation is measured in the test circuit
(Figure 11 by setting the Carrier Power (Pc) to 3.5 Watts with
VCC = 13.6 Vde and noting the power input. Then the Peak
Envelope Power (PEP) is noted after doubling the original power
input to simulate driver modulation (at a 25% dutY cycle for therm·
al considerations) and raising the Vee to 25 Vdc ho simulate the
modulatingvoltageL Percentage Up-Modulation is then determined
by the relation:
Percentage Up·Modulation
=
EP
[( Ppe )
1/2,
-1 ] .100
FIGURE 1 - 27 MHz TEST CIRCUIT
Cl. C2 9.0·180 pF ARCO 463 0' Equivalent
C3. C4 5.0·80 pF ARCO 462 0" Equivalent
C5 0.02 pF Ceramic Disc
C6 0.1 J.lF Ceramic Oisc
RFel 4 Turns #30 Enameled Wire Wound on
Ferroxcub. Bead Type 56·590·65I3B
RFC2
26 Turns 122 Enameled Wire 12 Layers-
L1
L2
0.22"H Molded Choke
0.68"H Molded Cijoke
13 Turns Each layer) %" Inner Diameter
4-628
MPS-U31
POWER OUTPUT
FIGURE 3 - VCC = 13.6 Vdc
FIGURE 2 - Vcc = 12.5 Vdc
20
,/"
TC ~ 25°C
~
10
~
7.0
;!:
5.0
....
"
I-""
0
....d
Circuit Tuned@15W
L VCC=2SV .,~
@250C Duty Cycl.
VCC=25V
@25% Duty Cycle
-TC ~25uC
P.E.P.
./
Go
l-
~
=>
"" , /
::=> 3.0
"~ 2.0 V ~~CC=12.5V
@100% Duty Cycle
0
Circuit Tuned@4.0W
VCC = 12.5 V
7
Go
1.0
0.05
0.07
0.7
0.5
1.0
1.0
!-"V
V
0
0.2
0.3
Pin. INPUT POWER IWATTS)
0.1
~
0.05
0.07
10 0
~ ~
50
z~
Z
300
0
,/
Cib
r-
t:
'" 30
«
5U
30
.i
15
1.0
5.0
2.0
10
·20
50
100
200
500
~
20
10
7.0
5.0
0.1
20
0.2
0.5
2.0
5.0
10
TJ = 1~50J
~
25°C
2
~o
>
-55°C
.--'
Y?Elsat)
V
J
VBE@VCE=10V
0.4
o.2
VCE= 10V
1.0
2.0
5.0
10
20
50
100
I---
ICIIB = 10
,;
,
I--"""'
20
0.5
100
0.6
w
>--
'-" ...
0
0
50
TJ= 250 C
u;
-
20
1.0
0.8
0
i'
FIGURE 7 - ON VOLTAGES
FIGURE 6 - DC CURRENT GAIN
200
1.0
......
YR. REVERSE VOLTAGE IVOLTS)
IC. COLLECTOR CURRENT ImA)
0
1.0
100
w
'"«z 70
50
"'Go
0.5
0.7
~
~
W'"
'"
B
0.5
TJ = 25 0 C
f--
200
V
1-0
0.2
0.3
Pin. INPUT POWER IWATTS)
FIGURE 5 - CAPACITANCE
VCE = 10 V
TA - 25°C
:z:
I-
70
0.1
500
200
~~
VCC = 13.6 V
@100% Duty Cycle
,/
FIGURE 4 - CURRENT·GAIN - BANDWIDTH PRODUCT
o
~
z
/'
./
!-"
0
V
P.E.P. VVCC=25V
@25% Duty Cycle
L
200
500
IC. COLLECTOR CURRENT ImA)
o
0.5
VCEI ..t) @ lellB = 10
1.0
2.0
5.0
20
50
IC. COLLECTOR CURRENT ImA)
4-629
-
I-
10
100
200
500
•
MPS-U31
FIGURE 8 - TYPICAL APPLICATION - 27 MHz CITIZEN·BAND TRANSMITTER
L3
3.9 IlH
MSD6100
250 pF
L4
'50 pF
MSD6100
13.6 V
Modulated
,13.6 V
For complete information on this circuit, refer to Motorola
Application Note, AN-596.
Casa·(Tabl·to-Sink Thermal Resistances (ROCSI
for Common Mounting Methods
Condition
No Grease
With Dow-340
Thermal Compound
With Dow-340 and 2 mil
Mica Washer
With 0.'" Chassis Block
and Oow·340
With 0.'" Block, Dow·340
and 2 mil Mica Washer
With 0.062" Block and
Dow·340
With 0.062" Block, Dow·340
and 2 mil Mica Washer
Roes In
°C/W
Mounting Screw
Torque On.llbs.1
4.25
5
2.'
1.7
2
5
4.7
4.3
2
5
2.4
5
4.9
5
2.2
5
4.7
5
LEAD FORM AND MOUNTING INFORMATION
FOR UNIWATT PACKAGE
Heat Sink
~
.
0.131
Tab formed for
flush mounting
order lIS MPS-U31·'
4-630
MPS .. U45
NPN SILICON
DARLINGTON
TRANSISTOR
NPN SILICON OARLINGTON
AMPLIFIER TRANSISTOR
... designed for amplifier and driver applications.
o High DC Current Gain hFE = 25,000 (Min) @ IC
15,000 (Min) @ IC
..
= 200 mAdc
= 500
mAdc
o Coliector·Emitter Breakdown Voltage BVCES = 40 Vdc (Min) @ IC = 100 /lAdc
o Low Coliector·Emitter Saturation Voltage VeE!sat) = 1.5 Vdc @ IC = 1.0 Adc
o Monolithic Construction for High Reliability
o Complement to PNP MPS·U95
F
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO(ll
40
Vdc
Collector-Emitter Voltage
VCES
40
Vdc
Collector-Base Voltage
VCB
50
Vdc
Emitter·Base Voltage
VEB
12
Vdc
Collector Current
IC
2.0
Adc
Total Power Dissipation @ T A = 25°C
Po
1.0
80
Watt
mW/oC
Po
10
80
Watts
mW/oC
TJ,T stg
-55 to +150
°c
Derate above 25~C
Total Power Dissipation@ Te = 25°C
Derate above 25°C
Operating and Storage JunctIon
Temperature Range
o
---II-J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
.
OIM
THERMAL CHARACTERISTICS
Characteristic
3 2
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
ROJA
125
°CIW
Thermal Resistance, Junction to Case
ROJC
12.5
°C/W
(1) Due to the monolithic construction of this device, breakdown voltages of both
transistor elements are identical. BVCES is tested in lieu of BVCEO in order to
avoid errors caused by noise pickup. The voltage measured during the BVCES
test is the BVCEO of the output transistor.
MILLIMETERS
MAX
MIN
9.53
A 9.14
B 6.60
7.24
5.66
C 5.41
0
0.38
0.53
F
3.18
3.33
G
2.54 BSe
4.19
H 3.94
0.36
0.41
J
K 12.07 12.70
L 25.02 25.53
5.08 sse
N
Q
2.39
2.69
1.40
R 1.14
INCHES
MIN
MAX
0.360 0.315
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSC
0.155 0.165
0.014 0.D16
0.475 0.500
i
CASE 152·02
4-631
~
rllik
I 0.106
0.055
MPS-U45
ELECTRICAL CHARACTERISTICS (T A
= 25 0 C unless otherwise noted)
1~____________________C_h_.r_a_ct_._ri_n_i_C________________________LI~s~y_m_b~O~I__L-__M~in~__L-__T~Y~P~__~~M~aX~__L-~U~n~i~t__-"I·
OFF CHARACTERISTICS
•
Collector-Emitter Breakdown Voltage
(lc = 100 "Ade, VBE = 0)
BVCES
40
-
-
Vdc
Collector-Base Breakdown Voltage
(IC = 100 "Ade, IE = 0)
BVCBO
50
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 "Ade, IC = 0)
BVEBO
12
-
-
Vde
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
-
100
nAdc
Emitter Cutoff Current
(VEB = 10 VdC, IC = 0)
lEBO
-
-
100
nAde
25,000
15,000
4,000
65,000
35,000
12,000
150,000
-
ON CHARACTERISTlCS(l)
DC Current Gain
(lC = 200 mAde, VCE
(lC
(lc
-
hFE
= 5.0 Vde)
= 5.0 Vde)
= 500 mAde, VCE
= 1.0 Ade, vCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
(lc = 1.0 Ade, IB = 2.0 mAde)
VCE(satl
-
1.2
1.5
Vde
Base-Emitter Saturation Voltage
(Ie = 1.0 Adc, I B = 2.0 mAde)
VBE(satl
-
1.85
2_0
Vde
Base-Emitter On Voltage
(lc = 1.0 Ade, VCE = 5.0 Vde)
VBE(on)
-
1.7
2.0
Vde
Ihlel
1.0
3.2
-
-
Ceb
-
2.5
6.0
pF
DYNAMIC CHARACTERISTICS
Small-5ignal Current Gain (1)
(lC = 200 mAde, VCE = 5.0 Vde, I
= 100 MHz)
Collector Base Capacitance
(VCB
= 10 Vde, IE = 0, I = 1.0 MHz)
(1)Pulse Test: Pulse Width ~300 p.s, Duty Cycle ~ 2.0%.
Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general
purpose amplifiers. As an audio amplifier these devices, when used as a complementary pair, can drive 3.5 watts into a 3.2 ohm speaker using
a 14 volt supply with less than one per cant distortion. Because of the high gain the base drive requIrement is as low as 1 mA in this application.
They are also useful as power drivers for high current application such as voltage regulators.
~632
MPS-U45
FIGURE 1 -- DC CURRENT GAIN
300
200
~
...- FTJ
125'C
~
70
;;: 50
z
~dEI= 5.0 V-
..........
II
100
FIGURE 2 -- SMALL-5IGNAL CURRENT GAIN
10
z
['..
;;:
25'C
'"
13
'-'
co
;
~
2.0
~
1.0
=
::::::
VCE = 5.0 VdC...... ~
TJ = 25°C
f=100MHz
'"u=>
to
f-
~
5.0
to
f-
z
20
to
~
~
10
7.0
5.0
~
i
'\. \\
0.05
0.1
0.2
0.5
0.5
«
_155~C
3.0
0.02
O. 1
2.0
1.0
0.2
0.01
0.02
0.03
FIGURE 3 -- "ON" VOLTAGES
2.
5
2.0
1. 5f-
t-ySE(~t) @ICIIS=500_
w
to
«
~
>
1.0
I I
O. Sf-
;;
k---I--'
t:-I--'
f-"
.s
L
0.03
1.0
_I--'
1I
~
~
i--'-
0vs For VBE
-3.0
8
-4.0
I I
0.05
-2.0
f-
<3
I I
I I
0.02
0.5
'-'
l-iCE(trnlj=lr
o
0.3
-1.0
~
VSE@VCE = 5.0 V
:>
0.2
)
I I
c;
0.1
FIGURE 4 -- TEMPERATURE COEFFICIENT
I-~ =125'~
J I' I
0;
0.05
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
~
1'1'
0.1
0.2
0.3
0.5
1.0
-5.0
0.01
2.0
r-
V
IL
~v
r0.02
IC. COLLECTOR CURRENT (AMP)
0.03
0.05
0.1
0.2
0.3
0.5
1.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 5 -- DC SAFE OPERATING AREA
2.0
...
1'\
I'
~
~ 1.0
"\
There are'two limitations on the power handling ability of p
f-
r5
0.7
'"
B
0.5
'"
.'\
'"co
~
transistor: junction temperature and second breakdown. Safe
operating area curves indicate Ie-VeE I,imits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater djssipation than the curves indicate.
~
0.3
-
co
I-
TJ = 150'C
BONOING WIRE LIMITATION
THERMAL LlMITATlON@TC=25'C
SIECONIO BiEAionN ilMITATliN
I
3.0
5.0
7.0
10
----
~ 0.2
The data of Figure 5 is based on T J(pk) ~ 1500 C; TC is variable
"'\.
-:.=:
O. 1
2.0
I
20
30'
depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less
than the limitations imposed by second. breakdown.
'40
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-633
..
MPS-U45
5·WATT AUDIO AMPLIFIER
'20 V
470 k
101~F
18k
02
L8M
04
01
INPUT 0---:)
0.1
0.47
1000 ~F
Uk
~F
8n
3.3 k
68
0.47
03
3.0M
,
1.5 k
100~F
05
8.2 k
01· MPS·A 1310ARLINGTON) .
02· MPS·A70
03· MPS·A20
04· MPS·U45
{COMPLEMENTARY
05· MPS·U95
OARLINGTONS
4-634
US!
U:511A
PNP SILICON ANNULAR TRANSISTORS
PNP SILICON
AUDIO TRANSISTORS
... designed for complementary symmetry audio circuits to 5 Watts
output.
.. Excellent Current Gain Linearity - 1.0 mAdc to 1.0 Adc
.. Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 1.0 Adc
•
.. Complements to NPN MPS·UOl and MPS·U01A
o Uniwatt Package for Excellent Thermal Properties 1.0 Watt @ T p.. = 250 C
F
MAXIMUM RATINGS
Rating
Symbol
MPS·U51
MPS·U51A
VCEO
30
40
Collector-Base Voltage
VCB
40
50
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current - Continuous
IC
20
Adc
Total Power Dissipation @ TA= 2S o C
Po
1.0
Watt
mW/oC
Collector-Emitter Voltage
Derate above 2S o C
Total Power Dissipation
Derate above 2SoC
8.0
@
T C = 2SoC
Operating and Storage Junction
Unit
Vdc
Vdc
10
Watts
80
mW/oC
-55 to +150
"c
Po
TJ,Tstg
,
STYLE 1:
Temperature. Range
PIN 1. EMITTER
2. BASE
3. COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ReJC
12.5
°C/W
Thermal Resistance. Junction to Ambient
ReJA
125
°CIW
MILLIMETERS
DIM MIN MAX
A
B
C
0
F
G
H
J
K
L
N
Q
R
9.14
9.53
6.60
1.24
5.41
5.66
0.38
0.53
3.1Il 3.~
2.54 BSe
3.94
4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 BSe
2.39
2.69
1.14
1.40
INCHES
MIN
MAX
0.360 0.315
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSe
0.155 0.165
0.014 0.016
0.475 0.500
0.985 1.005
0.200 BSe
0.094 0.106
0.045 0.055
CASE 152·02
4-635
MPS-US1,MPS-US1A
ELECTRICAL CHARACTERISTICS ITA' 2SoC unl... otherwIse notedl
Symbol
Characteristic
Min
Mo.
30
40
-
-
40
SO
-
S.O
-
-
0.1
-
0.1
",Adc
VCElsotl
0.7
Vde
VBElonl
1.2
Vde
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Vde
BVCEO
MPS-USl
MPS-US1A
IIC' 1.0 mAde, lB' 01
Collector·Base Breakdown Voltage
Vde
BVCBO
lie' 100~Ade,IE' 01-
MPS-USl
MPS-US1A
Emitter-Base Breakdown Voltage
BVEBO
Vde
liE' 100 ~Ade, IC' 01
Collector Cutoff Current
IJ.Adc
ICBO
IVCB' 30 Vde, IE • 01
MPS-USl
IVCB' 40 Vde, IE • 01
MPS-US1A
Emitter Cutoff Current
lEBO
0.1
IVBE • 3.0 Vde. IC • 01
ON CHARACTERISTICSlll
DC Current Gam
IIC
-
liliiii
=
hFE
10 mAde, VCE' 1.0 Vdel
55
IIC' 100 mAde, VCE • 1.0 Vdel
60
fl e ' l
50
0 Ade, VCE • 1.0 Vdel
Coliector·Emltter Saturation Voltage
II C • 1.0 Ade. lB' 0.1 Adel
Base-Emitter On Voltage
IIC
=
1.0 Ade. VCE • 1.0 Vdel
DYNAMIC CHARACTERISTICS
Bandwidth Product
IIc' 50 mAde, VCE • 10 Vde, I ' 20 MHzl
Cl,Jrrent-Galn
Output Capacitance
IVCB' 10 Vde, IE • 0, 1'100 kHzl
IT
50
Cob
-
MHz
30
pF
(1 )Pulse Test: Pulse Width ~300 IJ.S, Duty Cvc:le "S. 2 0%.
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
500
1.0
z 300 -
;;:
'"
~
or
I-
200
a
'"
Q
~
100
II II
J
- T ) 25 C
~CEI. 1.0 JdC
-
0.8
TJ·250C
~
Q
--
~
--
c
0.4
>
:>
VCElsa'l@ lellB '1~
200
500
1000
10
i--'
....
-ttrTT
o
50
100
.J....+--r
VBE @VCE • 1.0 V
«
0.2
50
J.-.+-f
w
'"
:;
:-- .....
20
I-
0.6
70
10
-
r-r
I-
VBElsa'l@ ICIIB' 10_
20
IC, COLLECTOR CURRENT 1m AI
30
50
100
200
300
500
1000
IC, COLLECTOR CURRENT (mAl
FIGURE 3 - DC SAFE OPERATING AREA
2.0
ii:
:;;
5
I-
I',
'"',"
1.0
ffi
or
0.7
::>
0.5
or
'"or
TJ"150·
Q
I-
~
c
'"~
0.3
"-'\
I
_ , - - - - Secondary Breakdown Limited
- - - - - Bonding Wire Limited
- - Thermallimitations @ Te = 2SoC
0.2
-I
1
1
APL'icat'Iorrr
0.1
2.0
3.0
5.0
There are two limitations on the power handling ability of a tran·
sistor: junction temperature and second breakdown. Safe
operating area curves indicate IC-VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
11
10
I
"' -
MPS-U51
MPS-~51A
20
c
~
30
The data of Figure 3 is based on T J(pk) = 1SOOC; T is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than t~e limitations imposed by second breakdown.
40
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTSI
4-636
MPS . U5!2 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
PNP SILICON
AMPLIFIER TRANSISTOR
... designed for general-purpose amplifier and driver applications.
• Complement to NPN MPS·U02
•
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V CEO
40
Vdc
V CB
60
Vdc
'V EB
5.0
Vdc
Cullcl'tor Current - Cuntmuous
IC
1.5
Total Power Dissipation@ T A = 25°C
Po
1.0
Watt
8.0
mW/'"C
Cullel'ioc-Enutler VUlloll!,€'
Collector- 8.lse
VoltJ.~e
Enlltter-B.lse Voltage
DerJ.te above
2,5~C
Total Power Dissipation @ TC = 25°(,
Po
Derate .lbove 25°C
T
Operatmg and Storage Juncholl
Temperature RJ.nge
J'
T
til
stg
Ade
10
Watts
80
mW/oC
-55 to +150
'c
THERMAL CHARACTERISTICS
F
Max
Symbol
Characteristic
Therm.!l Resistance, JunctIon to Case
Thermal ReSistance, JunctlOn to Ambient
ELECTRICAL CHARACTERISTICS
ROJC
12.5
R~JA
125
Unit
cC/W
'C/W
Characteristic
Symbol
Min
Max
Vdc
Collector-Emitter Bred.kdown Voltage
= 1.0 mAde,
16
=0)
JJ
Unit
OFF CHARACTERISTICS
(Ie
D
40
Collector-Base Breakdown
Vdc
Volta~(!
60
(Ie = 100 p Adc.. , IE'" 0)
nAde
Collector Cutoff Current
C±N
100
(VCB = 40 Vdc, IE = 0)
ON CHARACTERISTICS (2)
DC Current GaUl
DIM
50
(Ie = 10 mAde, VeE = 10 Vdc)
=10 Vdc)
50
(Ie = 500 mAde, VCE = 10 Vdc)
30
(Ie = 150 mAde, VeE
L
3 2
(T ... :; 25-C \Jnles~ o!herwi\e noted)
Collector-Enlltter Satur.lhon Voltolge
(Ie = 150 mAde, 18 = 15 mAde)
VCE(sat)
B.. ~e-Emltter SJ.turallOn Voltage
(Ie = 150 mAde, IS = 15 mAde)
VSE(sat)
A
300
B
C
Vdc
0.4
0
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
0.375
0.285
0.223
0.021
9.14
6.60
5.41
0.38
F
G
Vdc
H
J
1.3
K
DYNAMIC CHARACTERISTICS
L
Current-Gam-BandwIdth Product (2)
(Ie =20 mAde, VCE = 20 Vdc, f = 100 MHz
Output CapaCItance
(V CB 10 Vdc,
=
IE
MHz
100
N
Q
R
pF
=
0,
(=
100 kHz)
24
(1) R8JA is measured with device soldered into a typical printed circuit board
(2) Pulse Test: Pulse WidthS'300
IlS,
Duty CycleS2. 0%
4-637
-H-J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 152-02
MPS-U52
FIGURE 1 - DC CURRENT GAIN
300
TJ = l250C 1
250lc
z
;;:
'"
tz
~ 100
'"
i'l
g
•
~
~f-
-
- ......
r-.
-
- 8-
200'-
FrGURE 2 - "ON" VOLTAGES
1.4
--
'-550~
,
'"!3..
5.0
2.0
,\
I
10
O.6=
20
50
100
200
IC. COLLECTOR CURRENT (mA)
500
O.2
J
"-
0
1000 2000
VCE( ..tl
2.0
5.0
ICIIB -10
10
20
IC=10mA 50mA
150mA
5
mA
7
1000mA
~
2
O
0.05 0.1
r--
,....
0.5
1.0
2.0
5.0
10
20
50
100 200
O. 12.0
500
x
II II
t;
VCE = .20 V
TJ=250C
t= 100 MHz
~
'\
6.0
8.0 10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
~
40
FIGURE 6 - CAPACITANCE
200
TJ =25 0C
........ ~
200
-
100
l- NCib
~ 70
...........
.......
w
u
z
g
. / ./
~
;;: 100
'",.:.
0-:-
30
"-
U 20
z
Cob
::: 70
'":::>
~ 50
J:" 2.0 3.0
'\
4.0
FIGURE 5 - CURRENT·GAIN BANDWIDTH PRODUCT
",500
~
z
1,\
t0.2
lB. BASE CURRENT (rnA)
5 30Of-- _
~
'\
TJ=150oC
- - - BONOING WIRE LIMIT
3r-- ___ THERMALLIMIT@TC=250C
- - SECONO BREAKOOWN LIMIT
2
1\
4
z
1000 2000
1"1'
5
i=
o
500
0
'"
O. 6
200
FIGURE 4 - DC SAFE OPERATING AREA
0
>
100
2.0
TJ = 250
2:- O. 8
w
!3
0
50
IC. COLLECTOR CURRENT (mA)
1. 0
.
,
L
FIGURE 3 - COLLECTOR SATURATION REGION
~
VBE(on)@VCE- \0 V
~
,; O.4
1\
~~7" VCE-IIO Y
I111
~
=1::::
~ O.8 - VBE( ..t)@ICIIB= 10
w
VCE-1.0V
30
1.0
~
I',
70
01-
TJ = 250C
1. 2
5.0
7.0
10
20
30
50
70
100
0
200
I"- r"-t0.1
0.2
0.5
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
IC. COLLECTOR CIIRRENT (mA)
4-638
20
50
100
MPS 015'5 (SILICON)
MPS· U5i6
PNP SILICON ANNULAR
AMPLIFIER TRANSISTORS
PNPSILICON
AMPLIFIER TRANSISTORS
... designed for general·purpose. high·voltage amplifier and driver
applications.
D
0
0
•
High Collector· Emitter Breakdown Voltage BVCEO = 60 Vde (Min) @ IC = 1.0 mAde - MPS-U55
BO Vde (Min) @ IC = 1.0 mAdc - MPS-U56
High Power Dissipation - Po
= 10 W @TC = 25 0 C.
Complements to NPN MPS-U05 and MPS-U06
MAXIMUM RATINGS
Rating
Svmbol
Collector·Emitter Voltage
MPS.U55L MPS·U56
Unit
60
I
80
Vdc
60
1
80
Vdc
VCEO
Collector-Base Voltage
VeB
Emitter-Base Voltage
VEB
4.0
Total Power Dissipation
IC
2.0
Adc
T A = 25°C
Po
1.0
8.0
Watt
mW/oC
@
TC = 2SoC
Po
10
80
Watts
mW/oC
TJ.Tstg
-55 to +150
°c
Derate above 2SoC
Total Power Dissipation
Derate above 2SoC
Operating and Storage Junction
3 l
STYLE 1
PIN I EMITTER
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Case
2 BASE
3 COLLECTOR
~-~-
Unit
OIM
MIN
ROJA
125
°CIW
A
9,14
°CIW
B
c
D
F
G
H
J
K
L
N
•
R
-1LJ
N
MILLIMETERS
Max
12.5
I
--i..J±
Symbol
AOJC
IJ
0-
Temperature Range
THERMAL CHARACTERISTICS
R
r"lU_
Vdc
@
Collector Current - Continuous
H
A]
F-
MAX
9.53
660
1.24
5.41
5.66
038
0.53
3.18
3.3
2.548SC
394 4.19
036
0.41
12.07 12.70
2502 25.53
508 esc
239
2.60
1.14
.. 40
INCHES
MIN
MAX
Q.360
0315
0.260 0285
0.213 0.223
001
0021
0.125 0131
o.100BSC
0.155 0.165
0014 0016
0.475 0500
09B' 100'
0.2008SC
0.094 0.106
0.045 0.055
Collector Connected
to Tab
CASE 152·02
4-639
MPS-U55, MPS-U56
ELECTRICAL CHARACTERISTICS IT A = 25°C unless otherwise noted)
I
Ch.......iltlc
I
Symbol
Min
Typ
Max
60
80
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11
(lC g 1.0 mAdc, IB = 01
BVCEO
MPS·U55
MPS·U56
Emitter·Base Breakdown Voltage
(IE - l00"Adc, IC = 0)
BVEBO
Collector Cutoff Current
(VCB = 40 Vdc, IE - 0)
(VCB = 60 Vdc, IE = 0)
4.0
-
-
-
-
100
100
80
50
160
130
80
-
ICBO
I
Vdc
MPS·U55
MPS·U56
Vdc
nAdc
ON CHARACTERISTICS
•
DC Current Gain (11
(lC = 50 mAdc, VCE = 1.0 Vdcl
(lC = 250 mAde, VCE = 1.0 Vdcl
(lC = 500 mAdc, VCE = 1.0 Vdcl
-
hFE
-
Coliector·Eminer Saturation Voltage(1 1
(lc = 250 mAde, IB = 10 mAdc)
(I C = 250 mAdc, I B = 25 mAdc)
VCE(satl
Base·Emittar On Voltage (11
(lC = 250 mAde, VCE = 5.0 Vdc)
VBE(on)
Vde
-
-
0.22
0.15
0.5
0.78
1.2
Vdc
fy
50
100
-
MHz
Cob
-
10
15
pF
-
SMALL-SIGNAL CHARACTERISTICS
Current·Gain-Bandwidth Product (1)
(lC = 250 mAde, VCE = 5.0 Vdc, f = 100 MHzI
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
(l)Pulse Test: Pulse Width ';;300
"5. Duty Cycle ';;2.0%.
FIGURE 1 - DC CURRENT GAIN
300
200
FIGURE 2 - "ON" VOLTAGES
0
-Jc~ ~ ',.0 Vde
TJ"25 0C
.-tJ,J
IIIIII
v"l.,) ~ ,J,,;! IJ
8
. . . . . r'\
b--'
.J...l-tttT
"","f-""
VBE(onl Iii VeE = 5 0 Vdt
6
t-
0
4
0
0
2
t::::
VCEbatl@lltllB=10
30
"
0
10
20
50
100
Ie. COLLECTOR CURRENT (mAl
200
10
'00
FIGURE 3 - ACTIVE-REGION SAFE
OPERATING AREA
FIGURE 4
0
"
20
~
200
10
20
50
100
Ie. COLLECTOR CURRENT (mAl
500
CURRENT-GAIN-BANDWIDTH PRODUCT
~
['-.
'I\.
0
0
0
VCP50Vdc
0
J1ll"C
10
There are two limitations on tha power handling ability of a
transistor: iunction tamparatura and second breakdown. Sata
operating area curves indicate IC - VCE limits of tha transistor that
must ba observed for reliable operation; I.a., the transistor must
not ba subjacted to groater dissipation than tha curvas Indlcata.
20
,.
'00
'c. COLLECTOR CURRENT ImAI
VCIi. COLLECTOR·EMITTEII VOLTAGE (VOLTSI
I
200
'00
The data of Figure 3 is based onTJ(pk) = 1500C; TC Is variable
depending on conditions. At high cass tamperatures, thermal
limitations will reduce the power that can ba handled to valuas less
than the limitations Imposed bV second:breakdown.
4-640
MPS . U5'1 (SILICON)
AMPLIFIER TRANSISTOR
PNP SILICON'ANNULAR
AMPLIFIER TRANSISTOR
PNP SILICON
•
· .. designed for general-purpose. high-voltage amplifier and driver
applications.
•
High Collector-Emitter Breakdown Voltage BVCEO; 100 Vdc (Min) @ IC; 1.0 mAdc
•
High Power Dissipation - PD; 10 W@ TC; 25 0 C
•
Complement to NPN MPS-U07
H
F
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Svmbol
Value
Unit
VCEO
100
100
4.0
Vdc
2.0
1.0
B.O
Adc
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current - Continuous
IC
Total Power Dissipation @ T A - 2SoC
Po
Derate above 25°C
Total Povver Dissipation \@ TC
Derate above 2SoC
= 2So C
Operating and Storage Junction
Po
TJ.Tstg
Vdc
Watt
mW/oC
10
BO
-55 to +150
Watts
mW/oC
°c
Thermal Resistance. Junction to Ambient
A
c
o
THERMAL CHARACTERISTICS
Thermal Resistance. JUnction to Case
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Vdc
Temperature Range
Characteristic
o
G
Symbol
RaJC
RaJA
Max
12.5
125
Unit
H
J
°C/W
K
°C/W
L
N
o
R
CASE 152-02
4-641
MPS-U57
ELECTRICAL CHARACTERISTICS (T A
I
~
25°C unless otherwise noted)
I
Characteristic
Symbol
I
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11
(lC = LO mAde, IB = 01
BVCEO
100
-
-
Vde
Emitter-Base Breakdown Voltage
(IC = 100 "Ade, IE = 01
BVEBO
4,0
-
-
Vde
ICBO
-
-
100
nAde
60
30
140
65
30
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
ON CHARACTERISTICS (11
DC Current Gain
(lC
(lC
(lC
•
Coliector~Emitter
(lC
(I C
-
hFE
= 50 mAde, VCE = 1.0 Vdel
= 250 mAde, VCE = 1.0 Vde)
= 500 mAde, VCE = 1.0 Vdel
-
Saturation Voltage
-
Vde
VCE(satl
= 250 mAde, IB = 10 mAde)
= 250 mAde, I B = 25 mAde)
-
Base-Emitter On Voltage
(I C = 250 mAde, V CE = 5.0 Vdcl
0.24
0.15
0.5
1.2
Vde
-
MHz
VBE(onl
-
0.78
fT
50
100
Cob
-
10
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (11
(lc = 250 mAde, VCE = 5.0 Vdc, f = 100 MHzl
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
= 100 kHz)
15
pF
(11 Pulse Test: Pulse Width.;; 300"s, Duty Cycle';; 2.0%..
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
2DO
:f-~,.I,..i:
'.
•,
'"
0
VBElon)@VCE:SOVdc
4
,
,
1\
VCElsall@IC/ls"IO
20
6070100
200
0
1.0
500
!. . . .
IT-
1
20
1111
5.07.0 10
r-
5
..'1
VeE'" OVdc
TJ=25 0 C
V
1
H-tt
6
'\
0
0
-.l-.lllU
V,IE(~tJ@l,c,JB~ 10
a
5
Ie. COLLECTOR CURRENT (mA)
1
20
60
100
200300500
Ie, COLlEC!OR CUR RENT {mAl
FIGURE 3 - DC SAFE OPERATING AREA
FIGURE 4 - CURRENT·GAIN-BANDWIDTH PRODUCT
5.0
~ 300
2.0
....
~
~
"....
~
10
z
0.5
"
02 f---+-t-TJ
~
~
=
~
150 0 C
r J
SecondBreakdownlim.ted
I
g
0.1
I
~
0.05
I 111111
0.01
~ a
I
~
~
0.005
10
5.0
10
20
100
"-
i"-.
=<
Applicable To BVCEO
~()O2
i:'-.
.!, , 0
Bonding Wife Limlt!d
ThermailimilaMII5 @I Te " 25 or.
10
V
....=
c
~
u
200
IE
50
100
VeE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VeE =50Vdc
lill"C
30
SO 7.0
10
20
5070100
200
500
IC. COLLECTOR CURRENT (mAl
There are two limitations on the power handling ability of a
The data of Figure 3 is based on TJ(pkl = 150°C; TC is variable
transistor: junction temperature and second breakdown. Safe
operating area curves indicate IC - VCE limits of the transistor that
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
must be observed for reliable operation; i.e., the transistor must
than t,he limitations imposed by second breakdown.
. not be subjected to greater dissipation than the curves indicate.
4-642
MPS • U60 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
. designed for general·purpose applications requiring high break·
down voltages, low saturation voltages and low capacitance.
o Complement to NPN Type MPS-U 10
•
MAXIMUM RATINGS
Symbol
Value
Unit
veE a
300
Vdo
Collector· Base Voltage
VCB
300
Vdo
Emltter·Base Voltage
VEB
50
Vdo
Rating
Collector-Emitter Voltage
Collector Current
Continuous
Total Power Dlsslpatlon@IA"'2SoC
IC
500
mAde
Po
1a
80
Watt
mWf'C
Po
10
BO
mWflC
-55 to +150
°c
Derate above 2SoC
Total Power' Dlsslpatlon@Te"2SoC
Derate above 2S0C
Operating and Storage Junction
TJ,Tstg
Watts
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS IT A
I
Characteristic
~
25°C unless otherWise noted)
I
Symbol
Min'
M ..
Unit
OFF CHARACTERISTICS
Collector Emllier Breakdown VOltage( lJ
300
BVCBO
emmer·Base Breakdown Voltage
(Ie = 10j.lAdc, IC" 01
~VeBO
Vd,
D--
300
Vdo
50
Collector Cutoff Current
(VeB '" 200 Vd!;;,le =01
leBO
emitter Cutoff Current
leBO
(VBE '" 3.0 Vdc, IC
Vdo
BVCEO
IIC = 1 0 mAde, IR = 0)
COllector-Base Breakdown Voltage
(lC'" 100 j.lAdc, Ie '" 01
IlAd!;;
STYLE 1.
PIN 1. EMITTER
2. BASE
3. COLLECTOR
02
/-lAd!;;
= OJ
01
ON CHARACTERISTICS
DC Current Gain (2)
(Ie = 1 o mAde, VCE = 10Vdd
IIC::: 10mAdc, Vee
-FE
DIM
25
30
30
= 10Vdcl
lie'" 30 mAde, VCE::: 10 Vdc)
CoiJector·EmlUerSaturation Voltage
IIC '" 20mAdc,IB '" 2.0mAdcl
VCElsatl
Base·Emitter Saturation Voltage
IIC = 20 mAde, IS '" 2.0 mAde)
VSElsati
A
B
Vdo
0.75
0.9
Vdo
C
D
F
G
H
DYNAMIC CHARACTERISTICS
Current·Galn-Bandwldth Product
lie" 10 mAd!;;, VeE'" 20 Vdc, f '" 100MHzI
'T
Collector-Base Capacitance
(VeB:E 20Vdc,Ie '" 0, f = 1.0MHzl
Cob
MH,
60
pF
B.O
J
K
L
N
Q
R
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
9.14
9.53
6.60
7.24
5.41
5.66
0.38
0.53
3.18
3.33
2.54 BSC
3.94
4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 BSC
2.39
2.69
1.14
1.40
11.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSC
0.155 0.165
0.014 0.D16
0.475 0.500
0.985 1.005
0.2008SC
0.094 0.106
0.045 0.055
(1) Pulse Test: Pulse Width" 300 jlS, Duty Cycle" 2.0%.
CASE 152-02
4-643
MPS-U60
FIGURE 1 - DC CURRENT GAIN
150
V~E = \0 V~c
TJ=+1250C
10 0
z
_ + 2 5 0C
;;:
'"
>z
w
g;
70
~
50 _ - 5 5bC
........
::>
""'"10":::::
'-'
'-'
c
~
~
""
30
~
~
10
15
1.0
2.0
3.0
7.0
5.0
10
20
30
50
.'\
80
10~
IC, COLLECTOR CURRENT (mAl
•
FIGURE 2 - CAPACITANCES
FIGURE 3 - CURRENT·GAIN-BANDWIDTH PRODUCT
100
'" 100
TJ·250C
~
t:;
50
w
20
-l-
5
g;
10
~
60
'"c>-
40
Z
30
~
i'-
C,b
'-'
z
Tr250C
80 -VCE - 20 Vdc
10
20
50
100 200
~
\
./
1\
./
/
1\
20
0:
~
Crb)
,t:
500 1000
10
1.0
5.0
2.0
\fR, REVERSE VOLTAGE (VOLTS)
;;;
':;
c
~
w
-
-
-
O. 6
_f-
>
:>
.s<
200
~0:
100
~
0:
c
[j
O. 4
....
....
c
'-'
o. 1
o
1.0
2.0
5.0
II II
10
~
--
VCE(..,) @ICIIB = 10
20
50
.....
.
>-
'"':;
'-'
FIGURE 2 - SMALL·SIGNAL CURRENT GAIN
vrt v
150
o.2
O. 1
2.0
0.01
0.02
0.05
0.1
FIGURE 3 - "ON" VOLTAGES
2.0
r- -
.5
l--':: ~
~-O.8
f--
U
1.5 r- VaE(sa') @lc/la=500
w
~
VBE@W-5.~V
Ol
>'
--
II
'"
~
0.5
~
II
0.05
0.02
i
0.2
0.1
0.5
2.0
1.0
.---'
1--+-+-f-+++-H.......-;;:-=""~-.-+-+-t+H
.... -4.0
II
o
f--j-j+-++-H-H---f--l-+-+-HA'H--
f--j-j+-++-H-H---f--I-+~~-9·+t·rt·---
~ -3.2
VCE(sa,)@lclla = 500
~"_-.
_'-.'
..
-
1-
~ -2.4
I-
I--:
nVC FOR VCE(sa!)
-1.6
8
V
v-=
- - - --- -.
--
~
0VB IFOR
-
.
1
----1
V~E ++t-t-H+-'--j
-I'I--j--l-++-ltt-.---j
-4a~~~~~~~__~~~~~~~~~__~
0.02
0.05
0.1
0.2
0.5
1.0
2.0
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 5 - DC SAFE OPERATING AREA
,
2.0
"....
ffi
~
I,
'\
"-
ii:
::; 10
There are two limitations on the power handling ability of a
transistor: junction temperature and second, breakdown. Safe
0.7
operating area curves indicate Ie-VeE limits of the transistor that
~ 0.5
'"
~
8
~
~
0.3
I-- -
0.2
must be observed for reliable operation; Le., the transistor must not
be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pkl = 150°C; TC is vartable
depending on conditions. At high case temperatures. thermal limitations will reduce the power that can be handled to values less
than the limitations Imposed by second breakdown.
'\
a:
TJ = 150°C
BONOING WIRE LIMITATION
---- THERMAL LlMITATlON@TC=250C
'\.
r---r- __
I I
0.1
2.0
30
SiCONt BiEArOrr ilMITATlfN
5.0
7.0
10
20
30
40
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
4-647
•
,
~ +0: :==:=:~.~~-+r-trtn+r._---.. _ --+'-t--+H++F=.-.r.
___.~
TJ = 25°C
~
1.0
FIGURE 4 - TEMPERATURE COEFFICIENT
2.5
'"
2:
0.5
0.2
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
MPS-U95
5-WATT AUDIO AMPLIFIER
+20 V
470k
1.8k
10.I P F
10.I P F
Q2
1.8M
04
•
INPUT
0---1
01
0.47
1000pF
1.5 k
0.1 pF
8n
3.3 k
68
-=
0.47
03
3.0M
+
100pF
1.5 k
05
8.2k
01· MPS·A 13 (DARLINGTON)
02· MPS·A70
03· MPS·A20
04·Mps·U45
{COMPLEMENTARY
05 . MPS·U95
OAR LlNGTONS
4-648
NPN
PNP
11P29
11P29A
11P298
11P29C
TIP30
TIP30A
11P30B
11P30C
1 AMPERE
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
POWER TRANSISTORS
COMPLEMENTARY SILICON
40·60-80·100 VOLTS
30 WATTS
... designed for use in general purpose amplifier and switching
applications. Compact TO·220 AB package. TO·66 leadform also
available.
MAXIMUM RATINGS
Symbol
R.tlng
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
ColleClor Current ContinuOLlS
Peak
VCEO
Vca
VEa
Ie
Peak
la
Po
Base Current
Totat Power DISSipation
TC=2So C
Derate above 2So C
Total Power DISSipation
@TA = 2SoC
@l
Po
TlP29
TIP30
.
....
40
40
I
TIP29A
TIP30A
Operating and Storage Junction
Temperature Range
TJ,T ng
...
TIP29C
TIP30C
Unit
100
100
Vdc
Vdc
Vdc
Adc
..
.
..
32
..
..
...
-65 to +150
...
30
0.24
...
.
TIP29B
TIP30a
ao
80
5.0
1.0
3.0
0.4
~
2.0
..
Derate above 2SoC
Unclamped Inductive Load
Energv ISee Note 3)
t
60
60
0.016
WIDe
Watts
WIDe
mJ
De
,I
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal ReSIstance, JunctIon to Ambient
ELECTRICAL CHARACTERISTICS ITC '" 25°C unless otherwise noted)
I
CharKteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage 111
IIC = 30 mAdc, IS = 01
TIP29, TIP30
T1P29A, TIP30A
TlP29B, TIP30S
TlP29C, TIP30C
Collector Cutoff Current
TJP29, TIP29A, TlP30, TIP30A
(VCE = 30 Vdc, 18 = 01
TlP29S, TlP29C, TIP30S. TlP30C
IVCE '"' 60 Vdc, IS = 01
Collector Cutoff Current
T1P29. TIP30
{VCE = 40 Vdc, VEe = OJ
TlP29A, TIP30A
(VeE'" 60 Vdc, VES;; 01
T1P29B. TIP30B
(VCE "" 80 Vdc, VES '" 0)
TlP29C. TIP30C
(VCE '" 100 Vdc, VEe" 0)
Emitter Cutoff Current
(VeE = 5.0 Vde, IC = 0)
ON CHARACTERISTICS (1'
DC Current Gam
IIc" 0.2 Adc, VCE .. 4.0 Vdcl
lie = 1.0 Adc. VeE = 4.0 Vdcl
Collector-Emitter Saturation Voltage
lie" 1.0 Adc, Ie" 125 mAdel
Base·Emltter On Voltage
(Ie = 1.0 Ade, VCE '" 4.0 Vde)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
lie" 200 mAde, VCE" 10 Vdc, f test "" 1 MHz)
Small-Signal Current Gain
lie" 0.2 Adc, VCE = 10 Vd!:, f = 1 kHz I
111 Pulse Test: Pulse Width
~
•
Adc
Watts
SvmboJ
Min
VCEOlsus)
40
60
80
100
Ma.
Unit
Vdc
mAde
'CEO
0.3
0.3
/JAde
leES
200
200
200
200
1.0
mAdc
75
0.7
Vdc
1.3
Vdc
D-1c
-Jf
,.I
SECT A-A
I-JR
STYLE 1:
PIN 1.
2.
3.
.4.
H
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
DIM MIN MAX
A 15.11 15.15
9.65 10.29
B
4.06
4.82
C
0.89
D 0.64
F
3.61
3.13
G
2.61
2.41
H
2.19
3.30
J
0.56
0.36
K 12.10 1421
L
1.14
1.21
N
4.83
5.33
Q
2.54 3.04
R
2.19
2.04
S
1.14
1.39
T
5.91
6.48
U
0.16
1.21
1.14
V
'I+<.L
Dd~tG
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.141
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221A-ll2
To-:z20AB
300 /-IS, Duty Cycle'" 2.0%.
(21 tr .. Ihfe'. f test
(3) This rating based on testing with LC = 20 mH, RaE'" 100 n, Vee = 10 V. IC '" 1.8 A, P.R.F.;. 10 Hz.
4-649
TIP29, TIP29A, TIP29B, TIP29C, NPN, TIP30, TIP30A, TIP30B, TIP3OC, PNP
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - TURN-OFF TIME
l. 0
2.0 -
500
lO0 -
---
riJ \JoJc
25'C
0
~~-
I
-55 0 C
:g
w
'"
0
•
'"
;::
~
7.0
5. 0
DOl
rt-H-.
005 0.07 01
.O.l
0.5 07 10
IC. COLLECTOR CURRENT lAMP)
1. 0:::s;
~t=lf@VCC
O. 7
O. 5
O. 2
O. f
0.07
0.0 5
0.0 3
O.Ol . 0.05 0.07 0.1
02
O.l
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)
lO
---I
-
f--.!J
--I
APPROX
+11 V
I
:
Vin-
1- -
RC
I--
I
0.7
05
I
:g
11 d.O
n.
t2
I---
TURN·OFF PULSE
-
t,@VCC=lOV
~-
t,@VCC=IOV
o. 1
-4.0 V
td@VESI,ff)=2 0 V
0.0 7
0.05
I
--i
O.l
:l;::1
Cjd« C,b
: : loo
a
3a
IC' 0.3 A
2
=
O_r- -55 DC
1ij
a:
~
3.0A
\
\
0, 8
>-
~
~
a
7.a
5. a
8
1
O
1.0
3.0
"t-
i"
~.
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT IAMPI
..... 1-
\
o.4
>
0.03
1.0A
"'~
......
~.
•
Tp 25 DC
c
25 DCj'
"' 10a
~
=
ag
2. a
-
2.0
5.0
10
50
20
100
200
500
1000
lB. CASE CURRENT ImAl
FIGURE 11 - TEMPERATURE COEFFICIENTS
FIGURE 10 - "ON" VOLTAGES
+2. 5
G
3;
1.2 H-t-t-+t1ft--+--H-t-I-++H--+-+-H-t+l+t--+--;l
v
~ 1.0 H+l+HK--+--H+f-+f.~-+--+-H-++l++--./-cA'--j
~ ~~VB~E~Is~at)~@~I~C/~IB~=~10~~~~~~~~ff~~~~
0.6
VBE@VCE=2.0V-+++-I-+++I+--+-.l
j
+
a
a
"'~
-0. 5
0.2 0.3 0.5
0.02 0.03 0.05
0.1
IC. COLLECTOR CURRENT (AMPS)
0.01
1.0
'"
2.0 3.0
-
2.0 3.0
1.0
FIGURE 13 - EFFECTS OF BASE·EMITTER RESIS1ANCE
~ 107
~
~
i:i
ffi
1 = T p 150~C
a=
=
100 = =100 DC
c
~ 1 :!=::
jl08
r-....
S
-VCE-30V
~ 10
r
,/
OVB FOR VBE
L>~'-2 .0
II
-2. 5
0.2 0.3 0.5
0.003 0.005 0.01
0.02
0.05 0.1
IC. COLLECTOR CURRENT lAMP)
%
.3
>-
,/
a
I
U lill
FIGURE 12 - COLLECTOR CUT·OFF REGION
10 2
1/
~ -1. 5
103
_
/
II
'OVC FOR VCE(sa')
It!
~Elsatl @ICIIB=110 +-H-++l+t--+-+-+++tJ.l.!'/"---f---1
0.003 0.005
8
t~ -1.
:> 0.4 f-+-t
II-t-tl 111ft1--+--H-f-H+H--+-+-H-+tI+t----t7<-t
0.2
'APPLIES FOR IcllB <;hFE/2
TJ' -65 DC TO +150 DC
a
~ O.B H-H+HK--+--H+f-+f.~-+k::---t::;;j.,:lsfmP'f--I-I
~>
+2. a
.§ +1. 5
~
ffi +1.
U
~ +0. 5
I ........
10 5
~
=REVERSE
FORWARD
~
"'
~
..........
10 6
- +t04
~
VCE' 30 V
.......
I
IC~ICES
IC'2xICES
IC'10xICES
.........
......
.......
......
......
(TYPICAL IC~S VALUES
OBTAINED FROM FIGURE 12)
~IO- 21== 1==25DC
10- 3
-0.4
.........
r-...
r--..
ICES
-0.3
-0.2
-0.1
+0.1
+0.2
+0.3
+0.4
+0.5
+0.6
VBE. BASE·EMITTER VOLTAGE (VOLTS)
4-654
40
100
60
80
120
TJ. JUNCTION TEMPERATURE (DC)
1.40
160
NPN
PNP
TIP41
TIP41A
TIP41B
IlP41C
TIP42
TIP42A
TIP42B
TIP42C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
. . . designed for use in general purpose amplifier and switching
applications.
40-60-80-100 VOLTS
65 WATTS
o Collector· Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
o Collector· Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - TIP41, TIP42
= 60 Vdc (Min) - TIP41A, TIP42A
= 80 Vdc (Min) - TIP41B, TIP42B
= 100 Vdc (Min) - TIP41C, TIP42C
o High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
•
o Compact TO·220 IAB Package
o TO·66 Leadform Also Available
"MAXIMUM RATINGS
Symbol
TIP41
TIP42
TIP41A
TIP42A
TIP41B
TlP42B
TIP41C
TIP42C
Unit
VCEO
40
60
80
100
Vdc
Collector-Base Voltage
VCB
40
60
80
100
Vdc
Emitter-Base Voltage
VEB
Rating
Collector-Emitter Voltage
Collector Current
Continuous
IC
.
Peak
Base Current
18
Total Power Dissipation
@TC = 25°C
Derate above 25°C
Po
Total Power Dissipation
@TA=250C
Derate above 2SoC
Po
Unclamped Inductive
Load Energy (1)
5.0
Vdc
6
10
Adc
2.0
Adc
65
Watts
0.92
W/oC
.
2.0
0.Q16
E
Operating and Storage Junction TJ.Tstg
Temperature Range
62.5
-
-65 to +150
Watts
W/oC
°C/W
-
°c
I
' \ I~
J~r
~~='~Dd'~N''t~·
K
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN MAX
15.11 15.75
9.65 10.29
B
4.82
C 4.06
0.64
0.8.!1
D
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
1.27.
L
1.14
N
4.83
5.33
n 2.64 3.04
R
2.04
2.79
S
1.14
1.39
T
6.48
5.97
U
0.76
1.27
1.14
V
DIM
A
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, JunctIon to Case
R8JC
1.92
°C/W
Thermal Resistance. Junction to Ambient
R8JA
62.5
°C/W
ChDracteristic
(l)IC = 2.8 A. L = 50 mHo P.R.F. = 10 Hz, VCC = 10 V, RBE = 100.0.
L-'
H
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
O.OBO 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 22IA,G2
T()'220AB
4-655
TIP41, TIP41A, TlP41B, TIP41C, NPN, TIP42, TlP42A, TIP42B, TIP42C, PNP
ELECTRICAL CHARACTERISTICS (TC 250 C unless otherwise noted)
Q
I
I
Characteristic
Symbol
Min
Max
VCEO(,us)
40
60
BO
100
-
Unit
OFF CHARACTERISTICS
TIP41 , TIP42
TIP41A, TlP42A
TIP41B, TIP42B
TIP41C, TIP42C
Collector·Emitter Sustaining Voltage (1)
(lC = 30 mAde, IB = 0)
Collector Cutoff Currant
(VCE = 30 Vde, IB = 0)
(VCE = 60 Vde, IB = 0)
Collector Cutoff Current
(VCE = 40 Vde, VEB =0)
(VCE = 60 Vde, VEB = 0)
(VCE = BO Vde, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
Emitter Cutoff Current
(V BE =5.0 Vde, IC '= (I)
ON CHARACTERISTICS (1)
-
mAde
ICEO
TIP41 , TIP41A, TIP42, TIP42A
TIP41B, TIP41C, TIP42B, TlP42C
-
0.7
0.7
-
400
400
400
400
-
/,Ade
ICES
TIP41, TIP42
TlP41 A, TlP42A
TIP41 B, TlP42B
TIP41C, TIP42C
-
-
hFE
Base-Emitter On Voltage
IIC = 6.0 Ade, V CE = 4.0 Vde)
mAde
1.0
lEBO
DC Current Gain
(lC = 0.3 Ade, VCE = 4.0 Vde)
(lC = 3.0 Ade, VCE = 4.0 Vde)
Collector·Emitter Saturation Voltage
(lC = 6.0 Ade, I B = 600 mAde)
Vdc
-
30
15
75
VCE(satl
-
1.5
Vde
VBE(on)
-
2.0
Vde
fT
3.0
-
MHz
Ihfel
20
-
-
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
IIC = 500 mAde, VCE = 10 Vde, f test = 1 MHz)
Small·Signal Current Gain
(lC = 0.5 'Ade, VCE = 10 Vde, f = 1 kHz)
(1) Pulse Te.t: Pul.ewidth'; 300 /", Duty Cycle'; 2.0%.
(2) fT = Ihfele f t ••t
TA TC
FIGURE 1 - POWER DERATING
4,0 80
~
I- 3,0 60
..
120
140
160
T, TEMPERATURE (OC)
FIGURE 3 - TURN·ON TIME
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
2.0
VCC
+30 v
A
0.7
0.5
RC
SCOPE
RB
+:] --\--,
]:
0.3
w
0,2
'"
;::
·g,O V
51
01
........
I""---.tr
........
0, 1
Ir. tf:5:.10ns
·4V
CYCLE· 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
~UTY
TJ.2JOC I
VCC· 30 V
ICIIB ·10
1.0
-=
01 MUST BE FAST RECOVERY TYPE, og:
MB05300 USED ABOVE IB =100 rnA
MS06100 USED BELOW 18 =100 rnA
.......
r-....
-
i""
td@VBEloff)=5.0
0,07
0.05
0,03
0,02
0.06
0,1
0,2
0.4
0,6
1.0
IC, COLLECTOR CURRENT lAMP)
4-656
2,0
4,0
6.0
TIP41, TIP41A, TlP41 B, TIP41C, NPN, TIP42, TIP42A, TIP42B, TIP42C, PNP
FIGURE 4 - THERMAL RESPONSE
~
1. 0
~
o. 5
~ O. 7
o
0" 0.5
~
:'i o. 2
0.2
to
0.1
~ 0.0 7 -
0.05
o. 3
~ o. 1
ffi
:z:
0.0 5
-
0,0 3
ffi
0.02 ...-.:
....
in
;z
a:
'"
....
~
0.0 I 0.01
".
--:::::?
Plpkl
;;;0.-1"""
0.02
I-
--
fo.ol::::
r- i-"
n
SliG~E r~Lrr
0.02
0.05
-
0.1
ZeJCIII " r(.1 ReJC
ROJC" 3.125° CIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT '1'
tJUl
12~~
TJ(pkl- TC" P(pkl ZeJCltl
DUTY CYCLE. 0 "11/'2
11111
02
05
10
2.0
5.0
I
10
I
I I I I I I II
so
20
100
I
I
I I '"
soo
1.0 k
I
200
I, TIME (ms)
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
0
E
S.O
0.5 ms
.....
~
.... 3.0
i:ii
~ 2.0 r- -
TJ
=150°C
......
"-
- - - SECOND BREAKDOWN LTD
a: 1.0
BONDING WIRE LTD
o
THERMAL LIMITATION TC-2SoC
I---t--t-t(SIN
GLE PU LSEI
_ 0.5
CURVES APPLY BELOW RATED VCEO
8
E 0.3
TIP.!I, TIP4~::rTIP41A, TIP42A
0.2
TIP41 B, TIP42B
TlP41 C, TlP42C
O. 1
-
§
I
II
I
I
II
I
S.O
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown .
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
~
.......
I'\l.:°m
"- ,s.o l\..
ms",
The data of Figure 5 is based on T J(pkJ = 150°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pkl.o;; 150°C. T J(pkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
1\
10
20
40
60
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
BO 100
FIGURE 7 - CAPACITANCE
FIGURE 6 - TURN-OFF TIME
30 0
5.0
TJ =25°C
VCC =30 V
ICIIB =10
IBI =IS2
3.0
2.0
's
1.0
];
w
'"
;=
200
...........
0.2
-
TJ~2SJC- --
r-
0.7
0.5
0.3
I I
....
'f
~
--;-
0
r"-
Cob
-- ......
0
0.1
0.07
O.OS
0.06
0.1
1.0
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
30
O.S
6.0
1.0
2.0
3.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
4-657
20
r30
50
•
TIP41, TIP41A, TIP41B, TIP41C, NPN, TIP42, TlP42A, TlP42B, TIP42C, PNP
FIGURE 8 - DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
500
20
200
II
II
VeE' 2.0 V
300
..........
1J.150 oe
1.6
IC·1.0A
0
I- 25 0e
0
0
-
-55'e
..:-..
0
7.0
5. 0
0.06
•
~
O. S
1"'-1"-
0.4
~
0.1
0.2 0.3
0.4 0.6 1.0
Ie: eOLLECTOR CURRENT (AMP)
2.0
4.0
>
6.0
0
10
II
u
E.
w
'-= f:::::: i="'"
VSE( .. ,)@IC/IB·IO
I
0.4
(SE@)VCE)·.4.U
0.2
~
-
0.3 0.4
f.--0.6
1.0
1000
500
F~R I'CIIS
~
...il'l
V
2.0
~
3.0 4.0
6.0
V
+25 0 C to +150 oC
'0.5
I L .....1-4
'ove FOR VCE(sat)
8
,/
II
0.1
U
~
Y
VCE(",)@IC/IB' 10
0
0.06
300
t;; +1.0
~
0
i!
>
>'
50
100
200
lB. SASE CURRENT (rnA)
z
5 1.2
O.S
.lJpLES
:;: '2.0
~
~
30
FIGURE 11 - TEMPERATURE COEFFICIENTS
1.6
0
20
+2,5
TJ'250C
'"
«
5.0A
!\
FIGURE 10 - "ON" VOLTAGES
2.0
2.5A
~5iJ
1.2
0
0
T;'
-55°C to '25 0C
-0.5
II
-1.0
-1.5
fVS FOR VSE
-2.0
-2.5
0.06
0.1
'~5°f'ln~
-550C to +25 DC
I
0.2
Ie. COLLECTOR CURRENT (AMP)
./
0.3
0.5
-
II II
1.0
2.9
3.0 0.4
0.6
IC. COLLECTOR CURRENT lAMP)
FIGURE 12 - COLLECTOR CUT-OFF REGION
FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
10 M
1/
VCr30V
I'-.
r-...
100'C
=
16· wlx IC~S
I"
r--....
k
"><"
IC'2xICES I--
-
25°C
.......
FORWAR~
k ::::: (TYpical ICES Values I
-0.2
-0.1
.0.1 '0.2 '0.3 '0.4 '0.5
VSE. BASE·EMITIER VAOLTAGE (VOLTS)
........
.......
== I Obtained from ~igure 112)
10-3
-0.3
r--..
IC 'ICES
k
IC 'ICES
'0.6
'0.7
4-658
0.1 k
20
40
100
120
60
80
TJ.JUNCTION TEMPERATURE (OC)
140
160
TIP47 TIP48
TIP49 TIP50
1.0 AMPERE
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
... designed for line operated audio output amplifier, SWitchmode(l)
power supply drivers and other switching applications.
III
POWER TRANSISTORS
NPN SILICON
250·300·350·400 VOLTS
40 WATTS
250 V to 400 V (Min) - VCEO(sus)
o 1 A Rated Collector Current
o Popular TO·220 Plastic Package
CI
TO·66 Leadform Available
II
MAXIMUM RATINGS
Rating
Symbol
Coliector·Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
TIP47
250
3S0
VeEO
VeB
VEB
Ie
-
I
I
I
-
III
Co-
Unit
Vdc
Vdc
Vdc
Adc
t>
Adc
40
0.32
I>
0>-
Watts
2.0
_0.016
Co-
...
Watts
wIDe
I>
mJ
_-6Sto+150_
°e
-
a
~
-0. 5
~
-1.
i
0.05
APPLIES FOR Iclla < hFE/5
1l'i
liE
o. 1
+3.5
.§
...'"
"'"
O. 1
~
2.0
4-661
+15' IC
-55 0 C to +25 0 C
1
i
I T
I
~
I
I I
0.05
~
+25' C 10+150' C~
51-8~B FhR tB~
-2.5
0.02
'till~
550Ctot~510C-
0.2
0.5
IC. COLLECTOR CURRENT (AMPS)
0.1
:J:j;;p
1.0
2.0
•
TIP47, TIP48,
TIP4~,
TIP50 NPN
FIGURE 8 - INDUCTIVE LOAD SWITCHING
Voltage and Current Waveforms
Test Circuit
I
ovi
u
Input
-,
Voltage
Vee = 20 V
: - - - : - ' 00 m. ----<
:
I
1
I
1
COllect~;63 A~l--I ---
'eM:::: 0.63 A.
~
'"t-
~
i
I
I
I
I
I
I
I
I
I
I
1---------1---1
I
I
I
I
I
I
0
0
I
__
FIGURE 10 - "ON" VOLTAGES
1.4
VIC~ 2Jo v
1. 2
0=TJ-1500 C
~e
25 0 C
I
~
~
-55'C
;3
g
I
I
I
VCE(sat)--
lQ0
z
oV
VCER,-t--- I
I
Collector
I
'Voltage
I
I
I
10 V
I
FIGURE 9 - DC CURRENT GAIN
20 0
__
-5 V - - , .
.---------i--
Ie Monitor
Current
•
(See Note A)
r---I I
-I
U'
100mH
Input
Note A: Input pulse width is increased until
tw:::::: 3 ms
I
i
0
6. 0
./
1. 0
VBE('aI)@ ICIIB' 5.0
O. 8
w
'"'"~
VBE(on)@VCE - 4 V
O.6
e
O.2
I
i/
TJ 25 0 C
>
>' O. 4
4. 0
,.......-: . /
VCE(~1i @ICIIB·15.0V
V
~
2.0
0.01
0.04 0.06 0.1
0.2
0.4 0.6
Ic. COLLECTOR CURRENT (AMPS)
1.0
o0.02
2.0
4-662
0.04 0.06
0.1
0.2
0.4 0.6
IC. COLLECTOR CURRENT (AMPS)
2.0
NPN
PNP
TIPIOO llPIOS
TIPIOI TIPI06
TIPI02 TIPI01
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
DARLINGTON
8 AMPERE
· .. designed for general'purpose amplifier and low·speed switching
applications.
COMPLEMENTARY SILICON
POWER TRANSISTORS
o High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
60-80·100 VOLTS
80 WATTS
o Collector· Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) - TIP100, TIP105
= 80 Vdc (Min) - TlPl0l, TIP106
= 100 Vdc (Min) - TIP102, TIP107
•
Low Collector· Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC=3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
•
Monolithic Construction with Built·ln Base·Emitter
Shunt Resistors
•
•
TO-220AB. Compact Package
TO-66 Leadform Also Available
•
"MAXIMUM RATINGS
Symbol
TlPl00,
TlPl05
VeEO
60
Collector-Base Voltage
Vea
60
Emitter-Base Voltage
VEa
5.0
Vdc
Adc
Rating
Collector-Emitter Voltage
Collector Current
TIP10l, TIP102,
TlPl06 TIP107
Unit
80
100
Vdc
80
100
Vdc
Ie
8.0
15
Base Current
la
1.0
Adc
Total Power Dissipation @ TC - 2SoC
Derate above 25°C
Unclamped Inductive Load Energy (1)
Total Power-Dissipation @ TA 25 0 e
Derate above 2SoC
Po
80
0.64
Watts
E
30
mJ
Po
2.0
- - - - 0.016 - - -
Watts
w/oe
TJ, T stg
- - -65 to +150 - - -
°e
Continuous
Peak
Operating and Storage Junction
Temperature Range
w/oe
I
,
[I
J~r
I~
J SECT A-A
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(1) Ie
= 1.1
A, L = 50 mH, P.R.F.
STYLE 1.
PIN 1.
2.
3.
4.
ROJA
= 10 Hz, Vee = 20 V, RaE = 100 ll.
FIGURE 1 - POWER DERATING
MILLIMETERS
DIM MIN MAX
A 15.11 15.75
9.65 10.29
4.06
4.82
C
0.64
0.89
0
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
L
1.14
1.27
N
4.83
5.33
Q
3.04
2.54
R
2.04
2.19
1.39
....}}4
14T
5.91
6.48
U
0.16
1.21
1.14
V
TA TC
4.0 80
::
~
"'-.
3.060
t-+.
1"'-.
~TC
z
c
~
~
C
......
2.040
.........
,.
~
w
r---....
~ 10 20
--
r--..
I"---.
~
o
o
20
BASE
COLLECTOR
EMITTER
COLLECroR
40
60
60
'" "" "'-.
TA
-....
I'--..
100
-.........::: ~
120
140
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142
0.095
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
160
CASE 221A-02
T, TEMPERATURE lOCI
T().220AB
4-663
~:l*-
TIP100, TIP10l, TIP102 NPN/TIP105, TIP106, TIP107 PNP
ELECTRICAL CHARACTERISTICS (TC
= 250 C unless otherwise noted)
Symbol
Characteristic
. Min
Unit'
Max
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 30 mAde, la = 0)
•
Collector Cutoff Current
(VCE = 30 Vde, la = 0)
(VCE =40 Vde, la = 0)
(VCE = 50 Vde, la = 0)
TIP100, TlPl05
TIP10l, TIP106
TIP102, TIP107
Collector Cuttoff Current
(Vca = BO Vde, IE = 0)
(VCB = BO Vde, IE = 0)
(Vca = 100 Vde, IE = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
= 5_0 Vde,
IC
-
BO
BO
100
-
-
50
50
50
-
50
50
50
B_O
j.Ade
ICED
I'Ade
Icao
Emitter Cutoff Current
(VaE
Vde
VCEO(sus)
TIP100, TlPl05
TIP101, TIP106
TIP102, TIP107
-
lEaD
=0)
mAde
ON-CHARACTERISTICS (1)
DC Current Gain
(lc = 3_0 Ade, VCE
(lc =B.O Ade, V CE
Collector-Emitter Saturation Voltage
(lC
(lc
1000
200
20,000
-
2.0
2.5
-
2.B
4.0
-
Vde
VCE(sat)
=3.0 Ade, IB =B.O mAde)
=B.O Ade, IB = BO mAde)
Base-Emitter On Voltage
(Ie
-
hFE
= 4_0 Vde) .
= 4.0 Vde)
Vde
VaE(on)
= B.O Ade, VCE = 4.0 Vde).
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lC = 3.0 Ade, VCE = 4.0 Vde, f
Ihfe I
= 1.0 MHz)
Output Capacitance
(VCB
= 10 Vde, IE =0, f = 0.1
pF
Cob
MHz)
-
TIP105, TIP10B, TIP107
TlPl00, TIP10l, TIP102
300
200
(1) Pulse Test: Pulse Width .. 300 I'S, Duty Cycle .. 2%.
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - SWITCHING TIMES
5. 0
3.
Vee
-30V
RS & RC VARIED TO OBTAIN DESIRED CURRENT lEVELS
Dl. MUST BE FAST RECOVERY TYPES,' g.,
MBD5300 USED ABOVE 18 '" 100 rnA
MSD6100 USED BELOW Ie'" 100 rnA
Re
SCOPE
1.0
O. 7
'" O. 5
;::
3
O.
~
V,
::';~~-~J~-----~--]~
VI
approx __
-12V
I
I
lr.1t<100s
25,.,5
0:>.,
2. 0
"
_.
__J-
It...
,l..-
..- ''::--.......
l-
t-...
If
_
.......
.
O.If- Vcc = 30 V
I-IC/IS = 250
lSI = 1~2
Id @ VBElolI) = 0
O. IFTJ=25 c
PNP
0.0 7
NPN
0.0 5
0.5 0.7 1.0
0.2 0.3
0.1
If,
-.
-~ c........~
;>
fOfldandl r.D,lsdlSCDnnecled
and V2=O
For NPNlen circuit reverse all polantles.
DUTY CYCLE = 1 0%
2.0
3.0
IC. CO LLECTOR CURRENT (AMP)
4-664
5.0 7.0
10
TlPl00, TlPl0l, TIP102 NPN/TIP105, TIP106, TIP107 PNP
FIGURE 4 - THERMAL RESPONSE
~
I. 0
::;
o. )
io
O. 5
~
w
O. 3
Z
O. 2
'-'
~
0" 0.5
-'""'"
0.2
--~
;;;;;..-
0.1
'~
O. I
ZoJC(II" rltl ROJC
ROJC " 1.5S'CNI Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
0.07 r - 0.05
..J
~
0.05
:r
-00
:: 0.03
I 1-_
......
~ 0.02 '""""'ro.ii'r--.j,.~"l-H-H+--I;-+--t-H-++t++-+-+-+-+-j
!
OOI ......
n
0.01
>-
-
SljGniLJj
002
005
TJ(pkl- TC" P(pkl ZOJC(II
DUTY CYCLE. 0 "11/12
IIIII
0I
02
10
05
I I
10
2.0
5.0
I, TIME (ms)
I I I IIIII
50
20
100
I I
I I I III
200
500
10k
FIGURE 5 - ACTlVE·REGION SAFE OPERATING AREA
20
1b-l::
<-,
10
;;:
5.0
~
There are twO limitations on' the power handling ability of a
tranSistor:
>~
de
2.0
~
a
1.0
'"0
0.5
~
8
0.1
The data of Figure 51s based on TJ(pk) = 150°C; TC Isv8nable
depending on conditions. Second breakdown pulse limits are valid
for dUly cycles to 10% prOVided TJ(pkl < ISOoC. T Jlpkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limItations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown
TIPIOO. TIPI05
TIPIOI. TIPIOS
TIPI02. TIPIO)
0.05
0.02
1.0
average junction temperature and second breakdown.
Safe operating area curves indicate Ie - V CE limits of the transistor that must be observed for reliable operation, I.e., the transistor
must not be subjected to greater disSipation than the curves Indicate.
'" "!>,
~
TJ"150'C
- - BONDING WIRE LIMITED
- - - THERMALLY LIMITEO@TC"25'C
- - - SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.2
~.
......
10
5.0
20
50
2.0
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
100
FIGURE 7 - CAPACITANCE
FIGURE 6 - SMALL-5IGNAL CURRENT GAIN
10.000
300
TJ" 25'C
500 0
'" 300 0
~ 200 0
>~ 100 0
~
50 0
;i 300
t5 20 0
20 0
w
a
~
10 0
""
50
~
;# ;~
10
10
:::::: ~:::..!'""
-
u
z
TC" 25'C
""
~ 70
20
>.....
C"
50
I ~~N
5.0
C,b
.~
PNP
I
"-
r-
U
VCE" 4.0 Vde
IC" J 0 Adc
I
t-....
;:: 100
--
f- _ _ _ _ PNP
10
20
50
100
200
30
0.1
500. 1000
I. FREQUENCY (kHzl
- - -NPN
02
05
10
20
50
10
VR. REVERSE VOLTAGE IVOLTSI
4-665
20
50
100
TIP100. TlP101. TIP102 NPN/TlP105. TIP106. TIP107 PNP
NPN
TIP100, TIP101, TIP102
FIGURE B - DC CURRENT GAIN
20,00 0
20,000
10.000
7000
z 500 0
! 5000
;3
.
:l
...."
c
•
;
VCE~410~
VeE" 4.0V
10,000
Ii; 3000
PNP
TIP105,TIP106, TIP107
I
TJ • 1500 C.....
2000
y
-
V
C
~
~ 300
\.
~
I
1000
:;:z
500
",\
.;"
.....r
~
100 0
~ 70 0
0
- 500=,-55 C
30
20
0.2
I
i--'
25 0 C
-
'"'"c"
-550 C
300
,/
200
0.1
"
200 0"'"
'"
250 C /
1500 :""'-
Tp
o
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
~/
y
0.1
0.2
0.3
0.5 0.7
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
3.0
I
5.0
7.0 10
Ir COLLECTOR CURRENT lAMP)
FIGURE 9 - COLLECTOR SATURATION REGION
en
~
3.0
'"~
III
I "2.oA
'"
~
8
~
> 1.0
03
- r-
BOA
1\
\
~ 1.8
~
S
---
"--
14
. r- ) - -
~
0.7
1.0
2.0
3.0
5.0
7.0
20
10
30
---
_.
2.2
'"
i'
0.5
TJ "15°C
II
4.0 A
'C" 2.oA
~
\..
14
2.6
'"ffi
::
\
1.8
U
I III
~
\
\
2.2
::
~a:
~
\
~
I III
'"~
B.oA
. ~ 2.6
ffi'"
r;; 3.0
~
TJ" 25'C
4.0 A
> 1.0
0.3
0.5 0.7
1.0
Is, SASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
3D
I•. SASE CURRENT ImAI
FIGURE 10 - "ON" VOLTAGES
3.0
'3.0
TJ" 25°C
TJL5,IC
5
~
/v
0
V-/
b:::: ~
5 VSEljatl@ ICIIS" 250
o.5
01
I
02
10
'">
15
05
07
1.0
20
3D
50
70
IC. COLLECTOR CURRENT IAMPI
_.)-.
/
,
-- --: V
_V
---
VSE @VCE - 40 V
I
V
k""
VSElsatl@ICIiS - 250
II
I I
-
l1
1-
-;/
--
-
VCE(!odt) ~:lIC le"O 250
02
03
05 07
10
20
IC. COLLECTOR CURRENT lAMP)
4-666
~
-
r-
05
01
10
--
)---
,0
~
,-
)--- '---
>'
,,/
I
03
f----
'"~
w
'"
'"~
/'
VSE @VCE " 4.0 V
08VCEI .. ,I@IC'IS"25o
--I-
25
j
30
50
70
10
TlP100, TIP101, TlP102 NPN/TlP105, TIP106,' TIP107 PNP
I
NPN
TIP100. TIP101,TIP102
PNP
TIP105,TIP106, TIP107
FIGURE 11 - TEMPERATURE COEFFICIENTS
+S 0
'S 0
u
~ +40
~
:>
:>
'ICIIB" hFEI3
.§ +3.0
>z
~ +2.0
ffi
2SoC 10 ISOoC
+1.0
w
'"
-1.0
ffi
~
-3.0
i
-4.0
~
.
'OVC for VCE(."I
-2.0
/
/'
/'
/
250C 10 150~1-""
-H-t"
0VB for VBE
>-
-S.O
'ICIIB' hFEI3
0.1
0.2
..j..-
0.5 0.7
8
~
2.0
3.0
S.O
7.0
live lor VCElsal)
'1
1.1
-20
f-'"
Ii
1
:> ·4.0
'" ·S.O
0.1
-S50C 10 25°C
V-
V
2S0CIOIS~ ......
-550C 10 25 0C
~ -30 "VBforVBE-
10
-
/'
,,/
w
I
1.0
V
2SoC 10 ISOoC
~ -1.0
-55DC to 250C
I I /I
0.3
t2.0
U
~ +1.0
k;::::::: .......
;:::::::;r
1
fS
11
~
-SSoC 10 2S oC
8
::l
+40
E
~ +30
IIII
0.2
0.3
IC. COLLECTOR CURRENT (AMPI
O.S
1.0
2.0
3.0
S.O
7.0
10
IC. COLLECTOR CURRENT (AMPI
FIGURE 12 - COLLECTOR CUT-OFF REGION
10S
IDS
4=REVERSE= I!=FORWARO
~
a'"
'"o
10 3
3 = VCE - 30V
j--VCE - 30 V
2
10 2
f- TJ - ISOoC
~
10 1
~
100
8
L
I--TJ -ISOoC
I
r-- 100°C
r--10- 1
-0.6
0
25°C
0.4
-0.2
+0.2
+0.4
+0.6
+0.8
+1.0
+1.2
+1.4
r--
100°C
i==
25°C
10- I
.0.6
.
0.4
.0.2
VBE. BASE EMITTER VOLTAGE (VOLTSI
0.2
-0.4
0.6
-0.8
1.0
VBE. BASE·EMITTER VOLTAGE (VOLTSI
FIGURE 13 - OARLINGTON SCHEMATIC
COLLECTOR
NPN
TIP 100
TIP 101
TlP·102
PNP
--,
,...---+--,
BASE
I
I
I
I
IL _ _ _ _ _ _ _
TIP IDS
TIP 106
TIP 107
I
I
I
I
'1
I
I
COLLECTOR
--,
r---~h
I
I
I.
I
I
BASE
I
I
I
I
__ ...l
' __ ...l
EMITTER
EMIITER
·4-667
1.2
1. 4
•
NPN
PNP
I1PII0 TIP115
TIPlll TIP116
TIP112 TIP117
PLASTIC MEDIUM·POWER
COMPLEMENTARY SILICON TRANSISTORS
DARLINGTON
2 AMPERE
... designed for general·purpose amplifier and low-speed switching
appl ications.
•
COMPLEMENTARY SILICON
POWER TRANSISTORS
• High DC Current Gain hFE ~ 2500 (Typ) @ IC ~ 1.0 Adc
• Collector· Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) ~ 60 Vdc (Min) - TIPll0, TIPl15
~ BOVdc(Min)- TIPlll,TIPl16
~ 100 Vdc (Min) - TIPl12, TIPl17
• Low Collector· Emitter Saturation Voltage VCE(sat) ~ 2.5 Vdc (Max) @ IC ~ 2.0 Adc
• Monolithic Construction with Built·ln Base·Emitter
Shunt Resistors
• TO·220AB Compact Package
• TO·66 Leadform Also Available
60·80·100 VOLTS
60 WATTS
*MAXIMUM RATINGS
'Symbol
Rating
Collector~Emitter
Voltage
VCEO
VCB
VEB
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Peak
Base Current
Total Power Dissipation @TC = 2SoC
Derate above 25°C
Total Power Dissipation @ T A - 25°C
TIP110,
TIP116
60
60
4
-4
4
IB
Po
Po
Derate above 2SoC
E
Unclamped Inductive
TIP111,
TlP116
80
80
5.0
2.0
4.0 .
TIP112,
TIP117
100
100
......
.....
50
50
4
0.4
4
2.0
_0,016_
_25
4
......
..
..
Load Energy - Figure 13
Operating and Storage Junction.
TJ.Tstg
_ - 6 5 to +150 _
Unit
.Vdc
Vdc
Vdc
Adc
mAde
Watts
wf'c
Watts
W/oC
mJ
°c
=11~fS -C
I(~
j
l'lu
T-I Jr
Ll '0
j
K
SECTA·A
I-!- R
-ll--J
--l
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
R6JC
R6JA
2.5
°C/W
°C/W
62.5
~
3.060
z
0
...........
r-...
.......... r--...... . . .
>=
:!t
Bi
2.040
c
'"3;:
..........
i;:...:: ~
~ 1.020
~c
..........
~
00
0
20
40
60
80
100
T, TEMPERATURE (OCI
"""
120
BASE
COLLECTOR
EMITIER
COLLECTOR
MILLIMETERS
D1M MIN MAX
A 15.11 15.75
B
9.65 10.29
C
4.06
4.82
o 0.64 0.89
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J
U.36
0.56
K 12.70 14.27
l
1.14
1.27
N
4.83
5.33
Q
2.54
3.04
R
2.04
2.79
S
1.14
1.39
T
5.97
6.48
U
0.76
1.27
FIGURE 1 - POWER DERATING
TA TC
~
STYLE 1:
PIN 1.
2.
3.
4.
V
1'000.
140
160
'4-668
1.14
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0.190 0.210
0.100 0.120'
O.OBO 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221A-02
T0-220AB
TIPll0, TIPlll, TlPl12, NPN, TIPl15, TlPl16, TIPl17, PNP
ELECTRICAL CHARACTERISTICS
I
(TC
= 2S o C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
-
Unit
OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage (1)
(lC = 30 mAde, IB = 0)
Collector Cutoff Current
(VCE - 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE =50 Vdc, IB = 0)
Collector Cutoff Current
(Vce = 60 Vdc, IE =0)
(Vce =SO Vdc, IE = 0)
(Vce = 100 Vdc, IE = 0)
Emitter Cutoff Current
(VSE =5.0 Vde, IC = 0)
Vdc
VCEO(sus)
TIPll0, TIP11S
TlPlll, TIPl16
TIPl12, TIPl17
-
ICEO
-
TIPll0, TIPl15
TIPlll, TIPl16
TIPl12, TlPl17
mAde
I
2.0
2.0
2.0
mAde
ICBO
TIPll0, TIPl15
TIPlll, TlPl16
TIPl12, TIPl17
1.0
1.0
1.0
~
-
I SO
ON CHARACTERISTICS (1)
OC Current Gain
(lc = 1.0 Adc, VCE =4.0 Vdc)
(lc = 2.0 Ade, VCE = 4.0 Vdc)
2.0
•
mAde
-
hFE
-
1000
500
Collector-Emitter Sat!Jration Voltage
(lc = 2.0 Adc, IB = 8.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 2.0 Ade, VCE = 4.0 Vde)
VSE(on)
DVNAMIC CHARACTERISTICS
Small·Signal Current Gain
(lc = 0.75 Ade, VCE = 10 Vde, I = 1.0 MHz)
Ihle l
Output Capacitance
(VCS = 10 Vde, IE = 0, I = 0.1 MHz)
Cob
Vdc
-
2.5
-
2.8
25
-
Vdc
pF
-
TIPllS, TIPl16, TIPl17
TIPll0, TIPlll, TIPl12
200
100
(1) Pulse Test: Pulse Width .. 300 I'S, Duty Cycle .. 2%.
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - SWITCHING TIMES
4.
Vee
VCC Iclla
101
TJ
30 V
=
250 _ t=
102
=25'C
01".
-JOV
RS & Re VARIED TO
oaTAIf~
DESIRED CURRENT lEVELS
.0,. MUST BE FAST RECOVERY TYPES, e g.
"'805300 useD ABOVE '8'" 100 rnA
MS06100 USED BELOW IS ~ 100 rnA
Re
I?"~ t\.
0
8
o. 6
o.4
fortdillldl r.O,lSdlsconnetted
and V2= D, RBand RCarevarled
10 obtain deslffd leSf currents
For NPN lest cncUll,uversedlode,
polarrtlesand mput pulses
O. 2
t~
~
2.0
SCOPE
I-'
~
0.04
j...>"
-........
PNP
--NPN
0.06
0.1
-
"-b
VI--'
t,
-.
.....
...
r--..... I"'- k-'
0.2
0.4
0.6
:=
7'
r~@4JfI)=OI
1.0
IC. COLLECTOR CURRENT (AMP)
4-669
" l'
Dtf
2.0
4.0
TlP110, TIP111, TIP112, NPN, TIP115, TIP116, TIP117, PNP
FIGURE 4 - THERMAL RESPONSE
~
10
:::;
7
0' 05
5
«
~
0
~
3
..,
~
z
2
~
1
~
02
01
ZOJCI1l
~
r{tl ROJC
RIJJC ~ 2.5 0 eIW Max
o CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
DUTY CYCLE.
02
•
10
05
a~q
IIIII
I I
10
20
50
20
I TIME !msl
TJlpki
TC - Plpkl ZOjClli
12
I I I IIIII
I I
100
50
I I I III
200
500
10k
ACTIVE-REGION SAFE-OPERATING AREA
FIGURE 5 - TIPl15,l16,l17
FIGURE 6 - TIPll0,lll,l12
10
~~
10
~. 4.0
4.0
1m.
I-
2.0
~a:
aa:
~
Sm.
TJ :1S0oC
"
,,
de
.. i\
I-
~ 2.0
.
•
1.0
~
~
d~
T,- IS00C
1.0
t\
o
0
~
~8
f-.
-BONDING WIRE LIMITED
- - - - THERMALLY LIMITED
@TC:250C (SINGLE PULSEI
- - SECONDARY BREAKDOWN LIMITED
8
_u
r-t
.
0.1
1.0
CURVES APPLY BELOW
RATED VCEO
.
II
_u
TIP115
TIPI1S
TIPll7
40
10
VCE ' COLLECTOR EMITTER VOLTAGE (VOLTS)
-
-BONOING WIRE LIMITED
- - - - THERMALLY LIMITED
__
~E~~~~5:~~~~g~!~~~~~+ED
r-tCURVES APPLY BELOW
RATEO VCEO
O. 11.0
TlPll0 TIP111TIP112
II
10
V CE ' COLLECTOR EMITTER VOLTAGE (VOLTS)
SO 80 100
SO 80 100
FIGURE 7 - CAPACITANCE
200
I
""
TC: 2SoC
There are twO limitations on the power handlmg ability of a
tranSistor _ average Junction temperature and second breakdown
Safe operating area curves indicate
Ie - V CE limits of the tran-
sistor that mu~t be observed for reltable operation, I.e., the transistor
must not be subjected to greater diSSipation than the curves indicate
The data of Figures 5 and 6 is based on TJ(pk) = 1500 C; TC is
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(ok) <150°C. TJ(pk)
~ 100
.
w
u
z
l-
70
U
SO
..,-
30
§
--
-
Cob
!o:::LCib
20
mavbecalculated from the data in Figure 4. At high case tempera·
tures, thermallirnitationswill reduce the power that can be handled
to values less than the limitations imposed by second breakdown.
r--..
....
"
~
--
---PNP
1- III 10
0.040.0S 0.1
NtN
0.2
0.4 O.S
1.0
2.0
4.0 S.O
VR, REVERSE VOLTAGE (VOLTS)
4-670
10
20
40
TIPll0, TIPlll, TIPl12, NPN, TIPl15, TIP116, TIPl17, PNP
NPN
TIP110,111,112
PNP
TIP115, 116, 117
FIGURE 8 - DC CURRENT GAIN
60 k
6.0 k
TJ' moc
VCE
4.0 k
«
...~ 20 k
~
a 10 k V
u
800
o
3.0 V
TC' 12SoC
4.0 k
"
/
30 k
z
0
z 3.0k
~~
V
~ 2.0k
r-- i'.. ~
,
"\\1\
V
-SSoC
W
~ 600
\\
~
800
-
600
/
40 0
004
0.01l
0.2
0406
10
IC. COLLECTOR CURRENT (AMP)
01
20
300
004
4.0
/"
~
r\\.
\.\
I"-
'\
/
400
30 0
VCE' 3.0 V-
i'..'"
-lsoc ,/'
V
~ I.Ok
~
~
/
;:;:
-
006
2.0
02
0.4
0.6
10
IC. COLLECTOR CIJRRENT (AMP)
0.1
4.0
FIGURE 9 - COLLECTOR SATURATION REGION
~ 34
o
~
3.0
'"
'"
~c_
nr
>
~
>-!::
~
22
IIII
.JLl
LL
1.0A
~ 26
o
ro-
-
20A
-
E-
S
18
--j-oo
1.4
I.........
1.0
~
> 0.6
0.1
I II I
~
en
--j
'"
0.5
1.0
20
5.0
34
r---t_
t~1
>
'"
~ 2.2
--
"'"
'" 18
-
o
>--
o
~
>
1.0
06
L ___
100
50
20
-
1t--
-
- -
40 A
-I--
1--\:.---
- --
~
-
_. -
---
.
0.5
0.2
I0
2.0
.-
~-
-
j-.-
'B. BASE CURRENT (rnA)
.
TJ' 25 0 C
r-~
---
-J
01
"--:rl~)2
II
2011
~ ~-~- :-1 .
t~~_
~ 14
r..J
10
-1~t
26. - 05A _e-~ •
o
I
I---
f-=r ~lf 3
!c.
'"~"
If
0.2
~
2:. 30
!,
o
~
, 40~
_! __'TJ:~Wc
5.0
10
--
-
-t-
50
20
100
'B. BASE CURRENT (mAT
FIGURE lD-"ON" VOLTAGES
2
2. 2
I II
TJ'" 25°C
a
~
2.
1. 4 -
v~Eisa:) ~"Clla • 250
'"
'"t-
"5
>
1.0
:>
... V
I II
VaE@ VCE
0
V
'-""
3.0 v
!/
I II
I-: v~Eisa:i ~I'CIIB ! 25ri
~
V
~
o
'"'"
"~~
t-
Till
J U
1.0
:>
/:
.......- v - ' I-""
II II
J VaE(sa') @Iclla - 250
2:. 1.4
o. 6
O. 2
0.04 0.06
II II
TJ·25 0 C
18
t-
VSE@VCE- 3.0 V
I
./
JC~(~~T @ Icll8 .1250
,/
V
f--"
0.6
0.1
0.4 0.6
1.0
0.2
IC. COLLECTOR CURRENT (AMP)
2.0
0.2
0.04
• 4.0
4-671
0.06
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
•
TIPll0, TIPlll, TIPl12, NPN,TIPl15, TlPl16, TIPl17, PNP
PNP
TIP115, 116, 117
NPN
TIPf10, 111,112
FIGURE 11 - TEMPERATURE COEFFICIEIIITS.
+0. 8
+0 8
'APPLIES FOR fCllB < hFEI3
'APPLlEO FOR ICIIB < hFEI3
-
0
-.,.t---
.-~
t- _. - -_.-
1-- I-- _..
.1-
8
6
-- I - - -
- - 1--
2Isa:Cl~
2
OVC for VBE
0
-4. 8
0.04
II II
0.06
0,
~
IIII
c-.
I .U1'"
I
1--f 6 'OVC for
VCEI,,!)
i7"
_
IIIII
0.2
04 0.6
1.0
IC. COLLECTOR CURRENT lAMP)
2.0
4.0
/
TTn:;;7'["
-4.8
0.04
--'----0
"'7"
~
oI-fiVB for VBE
'1
I V
2SaC 'a ISOaC./
2
-~S~CI fsa c
.,-
u..--r
-SSac 'a 2S aC
4
~ P'
......
1"
I
21SaiCI"'SOX
8
~ p~ tz
'OVC for VCEI ..!)
I - f--- f--f-- _ -550C 10 25 0C
4
..
-~
~f-,
TITT
0
-ISr~ !a 2sa~
""11
0.06
I I 1\
I
0.4 0.6
1.0
0.2
fC. COLLECTOR CURRENT lAMP)
0.1
2.0
4.0
FIGURE 12 - COLLECTOR CUT·OFF REGION
'lOS
105
;;
104
~RE)lERSE== FFORWARO
.3
....
~
'"u
'"0
103
103= VCE"30V
-=-VCE" 30 V
=>
~
10 2
I- TJ
=ISOaC
10 I
0
u
~
100
r---- 100aC
~ 100
r - - 100aC
I--- 2S aC
+0 2
+0.4
+0.6
+0.8
+ 1.0
+1.2
10- 1
+D.6
+1.4
+0.4
+0.2
VBE. BASE EMITTER VOLTAGE IVOLTS)
-0.2
-0.4
-0.6
-0.8_
-1.0
-1.2
-1. 4
VBE. BASE·EMITTER VOLTAGE IVOLTS)
FIGURE 13 - INDUCTIVE LOAD SWITCHING
TEST CIRCUIT
VOL TAGE AND CURRENT WAVEFORMS
VCE MONITOR
~
D
-,,
,
ITUT +
!, -=-
VCC""20V
:
_-+ :
MONITOR
L-..oNv-......
_J
Rs
=
D.l
n
r---l
I
I
i
:----T---'DD ms - - - - - '
,I
I
I
I
'I
I
,----·-----i--
CURRENT
0:
I
VCER--!--- f
20 V
Input pulse width is Increased untIl leM = 0.71 A.
NPN test shown; for PNP test
reverse all polaritv and use MJE224 driver.
VCE(satl--
4-672
~.
COLLEC·TO:~T-1---
COLLECTOR
VOLTAGE
NOTE A:
} - - tw ;;; 3.5 ms (See Note A)
,
INPUT
-,
VOLTAGE
__ ~
-5 V --,
j.
D 71
Ie
I
I
I
:: I
'---------l---1
:
I
:
I
I
I
I
,
I
I
, __
NPN
PNP
I1P120 TIP125
TIP121 11P126
TIP122 TIP127
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
DARLINGTON
8 AMPERE
... designed for general'purpose amplifier and low-speed switching
applications.
" High DC Current Gain hFE = 2500 (Typl @ IC = 4.0 Adc
o Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(susl = 60 Vdc (MinI - TlP120. TIP125
= 80 Vdc (Minl- TIP121. TlP126
= 100 Vdc (MinI - TIP122. TIP127
" Low Collector-Emitter Saturation Voltage VCE(satl = 2.0 Vdc (MaxI @ IC = 3.0 Adc
= 4.0 Vdc (MaxI @ IC = 5.0 Adc
" Monolithic Construction with Bui't:'n Base-Emitter
Shunt Resistors
" TO-220AB Compact Package
o TO-66 Leadform Also Available
COMPLEMENTARY SILICON
, POWER TRANSISTORS
60-80-100 VOLTS
65 WATTS
•
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
60
VeEO
Vee
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
TIP120.
TIP125
Symbol
60
Ie
Peak
Base Cu rrent
..
Ie
Total Power Dissipation @ T C == 2SoC
Derate above 2SoC
Po
Total Power Dissipation @ TA = 2SoC
Derate above 2SoC
Po
Unclamped Inductive
..
•
•
•
•
•
•
•
65
0.52
_2.0
0.Q16
-..
..
50
--65to+150-
TJ, Tstg
Temperature Range
TIP122.
T1P127
100
100
120
....
E
Load Energy (1)
Operating and Storage Junction,
80
5.0
5.0
8.0
•
...
VEe
Continuous
TIP121.
TIP126
80
Unit
Vde
Vde
Vde
Ade
mAde
Watts
w/oe
Watts
w/oe
mJ
°e
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(1) Ie
STYLE I:'
PIN I.
2.
3.
4.
= 1 A, L = 100 mHo P.R.F. = 10 Hz, Vee = 20 V, ReE = 100.n.
'"::
;::
'"
"-
3 0 60
z
0
~
~
2.04 0
...........
C
'"
~
i2
MILLIMETERS
OIM MIN MAX
A 15.11 15.75
9.65 10.29
B
4.06
4.82
C
0.64
0.B9
0
F
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J.
0.36
0.56
K 12.10 14.21
L
1.14
1.21
N
4.83
5.33
Q
2.54
3.04
R
2.04
2.19
S
1.14
1.39
T
5.91
6.48
U
0.76
1.27
1.14
V
FIGURE 1 - POWER DERATING
TA TC
4.0 B0
"'r--....
~c
TA
.............
1.0 20
"'" "".......
............ ~
~ f::::..
0
20
40
60
BO
100
120
140
BASE
COLLECTOR
EMITTER
COLLECTOR
160
T. TEMPERATURE (OC)
4-673
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.045 0.050
0:190 0.210
0.100 0.120
O.OBO 0.110
0.045 0.055
0.235 0.255
0.030 0.050
0.045
CASE 221A'()2
T0-220AB
TIP120, TlP121, TIP122, NPN, TIP125, TIP126, TIP127, PNP
ELECTRICAL CHARACTERISTICS
I
(TC = 25 0C unless otherwise noted)
Characteristic
Symbol
Min
Unit
Max
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
IIC':' 100 mAde, Ie = 0)
•
Collector Cutoff Current
(VCE = 30 Vdc, Ie = 0)
(VCE = 40 Vde, Ie = 0)
!VCE = 50 Vde, Ie = 0)
Collector Cutoff Current
(Vce = 60 Vde, IE = 0)
(Vce,= BO Vde, IE = 0)
(VCB = 100 Vde, Ie = 0)
Emitter Cutoll Current
(VBE = 5.0 Vde, IC = 0)'
VCEO(sus)
TIP120, TlP125
TIP121, TIP126
TIP122, TIP127
ICED'
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
Vde
-
60
80
100
-
mAde
-
0.5
0.5
0.5
-
0.2
0.2
0.2
2.0
-
mAde
ICBO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
-
-
lEBO
ON CHARACTERISTICS 11)
DC Current Gain
IIC = 0.5 Adc, VCE = 3.0 Vde)
IIC = 3.0 Ade, VCE = 3.0 Vde)
mAde
-
hFE
-
1000
1000
Collector-Emitter Saturation Voltage
IIC = 3.0 Ad~, Ie = 12 mAde)
IIc = 5.0 Ade, IB = 20 mAde)
Base-Emitter On Vol
IIC =3.0 Ade, VCE =3.0 Vde)
Vde
VCE(satl
rage
-
-
2,0
4.0
-
2.5
4.0
-
Vde
VBE(on)
DYNAMIC CHARACTERISTICS
Small-5ignal Current Gain
IIC =3.0 Ade, VCE =4.0 Vde, I = 1.0 MHz)
Ihle l
Output Capaci tance
(VCB = 10 Vde, IE = 0, 1= 0.1 MHz)
Cob
-
TlP125, TIP126, TIP127
TIP120, TIP121, TIP122
pF
300
200
-
11) Pulse Test: Pulse Width .. 300 ).IS, Duty Cvele" 2%.
FIGURE 3 - SWITCHING TIMES
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
5. O~-~:- + - 0
0>'"
'l~
2.
Vee
-JOV
R8 & Re VARIED 10 OBTAIN DESIRED CURRENT LEVELS
0,. MUST BE FAST RECOVERY TYPES, e 9 ,
MBOS3QO USED ABOVE 18 "'- tOO rnA
MSD6100 USED BElOW 18'" 100 rnA
Re
1. o
SCOPE
~ o. 7
:E o. 5
>=
O.
3
>~
"-
--
-1+ t
For NPN test tlrCUlt reverse all pol.mttes
1-::"- -
- If ~ ~r-:-."-
If
ve~
_
-Ir~ f-- -
r---
-- .,-t-
..
-r-'" 1--:2.0
3.0
Ie. COLLECTOR CURRENT (AMP)
4-674
-
.--..,
,
O. 11-= 30 V
I-le/1 B=150 j...
~~
101 = I 2
-.
O. IF=Tr25~e,,,,,, Id@VOE(offl- OV
PNP'
0.0 7
NPN ..
0.05
0.5 0.7 1.0
0.2 0.3
0.1
tor Id andtr, 0, IS disconnected
andV2 =0
,....j
I
5.0 7.0
10
TIP120, TIP121, TlP122, NPN, TIP125, TIP126, TlP127, PNP
FIGURE 4 - THERMAL RESPONSE
~
10
,.~
07
o ·05
5
'"
o
i!O
3
"'z
~
'-'
~ _I:::;::'"
~"""
01
~
-
f-":: ~
02
O. 2
O. I
.. 00 7 - 005
ffi 005
- 002
I- 00 3
'"
d:::
I-
~ 00 2 i--'"
z
;:; 00 1""'I001
002
in
--1"
I-"
SI~G1E i~Lrr
005
-
01
...
PI,kl
ZOJCItI • rill ROJC
ROJC • 3.125° CIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT 11
tJUl
12~~
TJI,kl - TC· PI,kl ZOJCltI
DUTY CYCLE. 0 ·11112
IIIII
10
05
02
20
f,
10
50
TIME Imsl
I
I
I I I IIIII
I
100
50
20
I
I I'"
I
200
500
1.0k
FIGURE 5 - ACTlVE·REGION SAFE OPERATING AREA'
20
1001'S
10
-
...
"
0
30
-----PNP
- - -NPN
01
f.
FREOUENCY IkHzl
0.2
0.5
I
10
20
50
10
VR. REVERSE VOLTAGE (VOLTSI
4-675
20
50
100
•
. TIP120, TIP121, TIP122, NPN, TIP125, TIP126, TIP127, PNP
NPN
TIP120, TIP121, TIP122
I
FIGURE 8 - DC CURRENT GAIN
20.000
20,000
'" 3000
!;;
10,000
7000
z 5000
Tr1500C........
y
2000
;
SOD
300
200
•
250C /
1000
"
~
~
-
V
=>
c
~"
0.1
0.2
......... ~
2000
I--
=>
~ 1000
"'~
250C
..........
......r
c
~ 700
SOD ~,-550C
300
200
0.1
I
,./
TJ = 1500C..........
:: 3000
-550C
7-
V~E ~ 410 ~
VCE=4.0V
~ 5000
~
,
I II
I
!D,OOO
<.>
<.>
PNP
TIP125, TIP126, TIP127
0.3
0.5 0.7
V
1.0
2.0
3.0
5.0
7.0
10
.Y
0.2
0.3
0.5 0.7
IC, COLLECTOR CURRENT IAMPI
1.0
2.0
3.0
5.0
7.0 10
Ir COLLECTOR CURRENT IAMPI
FIGURE 9 - COLLECTOR SATURATION REGION
[ij
3.0
JII
!:;
o
~
~
2.6
22
o
~
8
~
>
2.6
IC = 2.0A
4.0A
1\
\
r:i: 18
~8
S.OA
\
~
\..
TJ = 25 0C
II
....
....
\
1.4
I III
~ 2.2
\
1.8
II
1 lLl
~o
\
::
~a:
~
~
\
'"
3.0
!:;
c
S.OA
!:;
o
ffi
en
TJ=250C
4.0A
IC = 2.0 A
I'
1.4
~
1.0
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
10
> 1.0
0.3
30
05 0.7
1.0
IB, BASE CURRENT ImAI
2.0
3.0
5.0
7.0
10
20
30
IR. BASE CURRENT ImAi
FIGURE 10 - "ON" VOLTAGES
3.0
3.0
fJL5 0lC
2.5
TJ = 25°C
2. 5
/
/
/1/
0
V-.
~
5 VBElj,,)@llefIB = 250
VBE@VCE=40V
.........
o-+-+-tVCEI",)@IC'IB=250
O. 5
01
~
V
5 VBE I@VCE=40V
./
0
-I-'"
o5
1
o2
0.3
05
0 7 10
20
30
50
.,.,-
70
01
10
I L
VCE(SdO
0,2
03
(ti'
Ii
Ie IS" 250
05 07
10
20
Ie. COLLECTOR CURRENT 'A!IP,
IC. COLLECTOR CURRENT IA'IPI
4-676
V
../
VBElsall@lICIiB = 250
I I
,../
30
50
70
10
l1P120, TlP121, TIP122, NPN, TIP125, TIP126, TIP127, PNP
NPN
TIP120, TIP121, TIP122
PNP
TIP125, TIP126, TIP127
I
FIGURE 11 - TEMPERATURE COEFFICIENTS
0
g:
>
'S 0
;:;
+4. 0
"IC/IS" hFE/3
.§. +3. 0
~
2.0
0+
~
25 0 C to 150°C
+1.0
S
"'
~
~
~ -2.0
-4.0
IIII
-S.O
0.1
0.2
0.3
O.S 0.7
1.0
3.0
t2 a
V
S.O
250C to 150 0 C
w
live for
~ -10
/
~
I
7.0
VCE(sat)
I Ii
I I I
~ -20
-55°C to 25°C
2.0
ffi
"ICiIS" hFEI3
S
",-
-+-
H-t:C
0VB for Vse
>-
+30
~ +1.0
/
",-
2S0CtoISO~
1:5 -3.0
i
.-:::::- / "
*()VC for VCElsat)
-1.0
+40
'~"
;:;
v.:
-55°C to 250C
w
:I
t7
=2
-30 "VSlorVSE-
" ·S.O
0.1
10
0.2
"
___
-'/
-SSoC 10 2SoC
2S0CtoIS~
:> -4 0
03
0.5
./
LlIL
1.0
""...... ""-55°C 10 25 0 C
20
3.0
S.O
7.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
FIGURE 12 - COLLECTOR CUT-OFF REGION
10 S
lOS
-
!=REVERSE= ,,==FORWARO
10'
;(
~
B
"'o
10 3
.3
>-
"'
B
102
f- Tr ISOoC
~
S
Wi
=?
10 0
~ 10 31== VCE"30V
-VCE"30V
.--
I--
102
§
10 I
_
S
I - - 100°C
10- 1
-0.6
a::
o
I-- TJ °ISOoC
I--
~1O 0
100°C
I - - 2SoC
2SoC
10- I
-0.4 -0.2
+0.2
+0.4
to.6
+0.8
+1.0
+1.2
+1.4
+0.6
+0.4
+0 2
VSE, SASE EMITTER VOLTAGE (VOLTS)
-0.2
-0.4
-O.S
-O.S
-1.0
VSE. SASE·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - DARLINGTON SCHEMATIC
COLLECTOR
NPN
TIPI20
TIPI21
TIPI22
PNP.
--..,
--..,
r------1~
SASE
CO LLECTOR
r------1>--,
I
I
I
I
I
I
I
I
BASE
I
I
I
I
I
I
l'--"oAh_"'VVIr-+--'
L
_ _ _ _ '- _ _ _ _ ...JI
__ ...J
I
I
EMITTER
EMITTER
4-677
-1.2
-1. 4
•
•
4-678
I
Thyristor Selector Guide
5-1
EJI!
MI !I!!l':!.!!~!!!u:~~R
HANDLING APPLICATION
.
Thyristors and their trigger devices can take numerous forms, but they share these characteristics:
• They are "open circuits," capable of withstanding rated voltage until triggered .
• They become low-impedance current paths when triggered, and remain so, even after the
trigger source is removed, until current through that path stops, or is reduced below a minimum
"holding" level.
The regenerative action which "holds" a Thyristor in the "on" state is due to multiple layers of opposite
P and N silicon, in which part of the load current through the Thyristor is injected to supplement the trigger
current, and to sustain conduction when the trigger is removed. This characteristic, coupled with the
Thyristor's low "on resistance," makes it possible to control a portion of each cycle of an AC power
waveform into a load, in low-dissipation "dimming" or motor speed control applications, to precisely switch
capacitive discharge currents in automotive ignition systems, or to efficiently modulate radar systems with
high current, fast pulses .
•
seRs
Silicon-Controlled Rectifiers (SCRs) are Thyristors intended to switch load currents
in one direction only, making them useful for DC and half-wave AC applications as
well as full-wave applications. in which bidirectional current is routed in one direction
through the SCR via a bridge rectifier.
For battery chargers, flashers and other
applications where high humidity. conditions
might- be encountered. the 20 Ampere.
metal-packaged, pressfit SCR line is highly
popular. due to low manufacturing cost.
High·current Radar pulse modulator
SCRs.
Types 2N6506. 2N3896 and 2N6396 are
especially sutted for use in Power Supply
Crowbar Protection.
.
TRIGGER DEVICES
Motorola supplies a variety of trigger devices
whose characteristics and modes 01 triggering
are suited to different signal sources.
• Unijunction Transistors - UJT - A
negative resistance, threshold sensitive
device especially suited to unidirectional
triggering of SCRs, pulse generators,
oscillators, and timing circuits.
• Programmable Unijunction Transistors PUT - Similar to the UJT, but capable of
externally preset threshold characteristics
via a voltage divider.
• Bilateral Triggers - DIAC - A low-cost
bidirectionaltriggerwhich can drive a Triac
in full-wave AC applications.
• Silicon Bidirectional Switch - SBS Similar to a DIAC, the SBS has an added
gate electrode lor external
synchronization.
• Optically Coupled Triac Driver - Allows
bidirectional Triac triggering from low-level
logic, such as Microprocessor outputs,
while isolating these sensitive sources by
as much as 1500V fromAC line transients.
TRIACs
Triacs are bidirectional Thyristors, in which a single trigger source turns
the device on for load current in either direction. Because they do not
require a bridge rectifier in order to handle full-wave AC, Triacs are
useful in AC power applications that require full source power control
capability to be applied to the load.
To isolate sensitive IGs, such as
Microprocessors from damaging line
For high-volume consumer use in
power swttches, lamp dimmers, and
motor speed controls, consider the
voltages, the Power Triac may be driven by
an Optically Coupled Triac Driver.
low-cost, medium-current.
plastic packaged 2N6342.
For high sensnivity and IC logic
compatibility, investigate the MAC92
and 2N606B series ol.Triaes.
For applications in which an AC load is turned
off after a fixed time interval, Motorola offers a
selection 01 WTs and PUTs .
..
In AC-operated appliances that use
quick·disconnect terminals lor
assembly ease, such as Microwave
Ovens, Motor Controls, and Space .
Heaters, check out the MAC20,
MAC25, and MACSO series.
Using Triaes lor a dazzling Light Show?
Low-cost DIACs or extemally triggerable
saSs will turn you ani
5-3
Quadrant I
MT2+
TRIAC
Forward
Br ••kovar
CHARACTERISTIC
CURVES
Voltage'
Cur,..nt
'\
Reverse
Breakaver
Voltagel
Current
SCR
SCR
A
Quadrant III
MT2-
o.{
K
>
Br.akover
POint
Reverse
Avalanche
1(-1
Rellion
DIAC
1(+)
V(+)
VI-J
V.
a
11-)
UJT
VEBl
Cutoff
Region
~
I Negative
I Resistance I Saturation
Region :
Region
I
Vp - - -
t
VEBI(S8tl~ ___
Vv
SBS
(+)
Vs
/IH
V(-)
IE
IV
J
I
IS
V (+)
IS
/
IH
Vs
r
PUT
Vp
Vs
•"
IH
1(+1
~t.f
>
VF
Vv
/VORM
Ip
IV
V.H~-~--
IF
IA
'\
Reverse
Bra.kOller
Voltagel
Current
Quadrant III
MT2 -
5-4
Quadrant I
MT2+
OPTICALLY
COUPLED
TRIAC
DRIVER
NUMERIC INDEX
The following Motorola device types are recommended from the standpoint of cost, performance and
delivery. If your specific requirement is not included in this listing (or the on~ below it), please ask your
Motorola Sales Representative for special price and delivery information.
Device Type
Device Type
Device Type
Device Type
MAC Devices (Trlaes)
MAC15
MAC15A
MAC20
MAC20A
MAC25
MAC25A
MAC35
MAC36
MAC37
MAC38
MAC50
MAC50A
MBS4992
MOC3010
MOC3011
2N4183 to 4190
2N4199 to 4204
2N4212 to 4219
2N4441 to 4444
2N4851 to 4853
2N4870
2N4871
2N4948 to 4949
2N5060 to 5064
2N5164 to 5171
2N5431
2N5441 to 5446
2N5567 to 5570
2N5571 to 5574
2N6027
2N602!\
2N6068 to 6075
2N6114
2N6116 to 6118
2N6145 to 6147
2N6151
2N6152
2N6153
2N6154
2N6155
2N6156
2N6157 to 6165
2N6167 to 6170
2N6171 to 6173
2N6174
2N6236 to 6241
2N6342 to 6349
21116394 to 6399
2N6400 to 6405
2N6504 to 6509
M~C92
MAC220
MAC221
MAC40688 Replaced
by T6420B
MAC40689 Replaced
byT6420D
MAC40690 Replaced
byT6420M
MAC40795 Replaced
byT4101M
MAC40796 Replaced
by T4111M
MAC40799 Replaced
by T4121B
MAC40800 Replaced
by T4121D
MAC40801 Replaced
by T~121M
MBS Devices
(Bilateral Switch)
MBS4991
MCR Devices (SCRs)
MCR63
MCR64
MCR65
MCR100
MCR10l
MCR102
MCR103
MCR104
MCR106
MCR120
MCR201
MCR202
MCR203
MCR204
MCR205
MCR206
MCR220
MCR221
MCR649AP
MCR729
MCR914
MCR1906
MCR1718
MCR2305 Replaced
by 2N4167/74
MPU Devices
(Programmable UJT)
MPU131
MPU132
. MPU133
MPU6027
MPU6028
MU Devices (UJT)
MU10
MU20
MU2646
MU2647
MU4891
MU4892
MU4893
MU4894
1N Devices (Triggers)
lN5758 to 5762
2N Devices
2N681 to 692
2N1595 to 1599
2Nl842 to 1850
2N2322 to 2329
2N2573 to 2579
2N2646
2N2647
2N3668 to 3670
2N3870 to 3873
2N3896 to 3899
2N3980
2N4103
2N4167 to 4174
MCR26P4L Replaced
by 2N4183/90
MCR3000
MCR3818
MCR3835
MCR3918
MCR3935
The popular device types listed below, originally introduced by other manufacturers, are now produced
in volume by Motorola.
Device Type
"C" Devices (SCRs)
C35
Cl06
C122
, C228
C228()3
C229
C230
C230()3
C231
C231()3
C232
C233
Device Type
Device Type
Device Type
"S" Devices (SCRs)
S2800
S6200
S621 0
S6220
"SC" Devices
(Trlaes)
SC136
SC141
SC146
SC245
SC245()3
SC246
SC250
SC250( )3
SC251
SC260
SC260( )3
SC261
"r' Devices (Trlaes)
T2300P
T2301P
T2302P
T2500
T2800
T2801
T2802
T4100
T4101
T4110
T4111
T4120
T4121
T62IOO
T6401
T6410
T6411
T6420
T6421
5-5
•
... Metal or Plastic Packages
WSCRs
... 0.5 to 55 Amperes RMS
... 25 to 800 Volts
... Industry Standards, with a variety of Custom
Specifications and Leadforms available.
ON-STATE (RMS) CURRENT
0.5 AMP
0.8 AMP
1.6 AMPS
4.0 AMPS
".:
. "./<":.
v
~
••
":Ii::i , .'
·. . :· . ·i/r~.:,:
•
)
., ..:
'.sO,
, .
MCR203
:108 ,
MCR204
'~--~t-
________
MCR206
:
'V"M
. ,.
,3Q~ V •
MCR103
2N506l
MCR104
r-~2N~OO~6~2
2N1595
2N2322
2N42l2
MCR1906-l
2N2323
2N42l3'
MCR1906-2
77'0$
.. .. .'ca.i&
TO<126'
,.
.. ~2·'
MCR106-1
2N6236
MCR106-2
2N62~7
C106Yl
Cl06Fl
MCR106-3
MCR1906-3
Cl06Al
1-________
~~~~4______
~
2N6238
MCR106-4
MCR1906-4
Cl06Bl
2N6239
2N42l4
2N2324
-+________
+-______
2N1596
__1-______
MCR120
2N5064
2N159?
2N2326
2N4216
MCR100-5
2N1598
2N2328
2N4218
MCR1906-5
MCR106-5
Cl06Cl
MCR100·6
2N1599
2N2329
2N42l9
MCR1906-6
MCR106-6
2N6240
Cl06Dl
MCR1906-?
MCR106-?
Cl06El
MCR1906-8
MCR106-8
2N624l
Cl06Ml
"
,V""" "av
MCR100-?
. 608V .
MCR100-8
. '. 700'
MCR106-9
808V,
"
10
'. ·tl
15
'
. ,
..
,"
. "·16.,
;1!O
15'
i~--~r-~~-4~--~~~~+---~~~~-4~~~+-~--~~~~
I'
~ lmAl
' G.lf " 0 . 2 .
,til'
0.:1 . D . t
.1"'1.0
. 0.2
0.2
I.~~~~--~~~-+~~+-~~~~~~~--~~~
•
tq.(V}'
:. :;'
.. iii ," I,. tmAl ,
\.
.. o.a:', .•
5.0
"lui' .
. 1.0 -'./ .
'. :.3.0':
5.lJTyp
2.0
5.0
5.0
····0.8
........)
3.0
,
ON-STATE (RMS) CURRENT
,
'\ · · · ·. ·. .· . ·. I.~
8.0 AMPS
.
:
ease 90-0$Style 1
.
....
-, -,
Case 22i'IJa
MCR3000-1
2N4441
MCR3000-2
MCR3000-3
2N4442
MCR3000-4
MCR3000-5
2N4443
MCR3000-6
MCR3000-7
2N4444
MGR3000-8
MCR3000-9
MCR3000-10
80'
_11&,
~l
C122Fl
S2800F
G122Al
S2800A
G122Bl
S2800B
C122Cl
S2800C
C12201
S28000
C122El
S2800E
C122Ml
S2800M
G122S1
S2800S
C122Nl
S2800N
C122/S2800' .
. l!OJ100
.
.
c... .n
. Style,
12 AMPS
12.5 AMPS
16 AMPS
.... ::, ..
' . "
. . ..
ea•• m-02 :
:.'
ea.. ,i4'
TQ.2222OAB
$lyle 2
$tvle 2
"25 V
T2500A
SC141A
T2500B
SC141B
T2500C
SC141C
T2500D
SC141D
T2500E
SC141E
T2500M
SC141M
T2500S
SC141S
T2500N
SC141N
60
80
,
MAC220-2
MAC221-2
MAC220-3
MAC221-3
2N6342
2N6346
MAC220-5
MAC221-5
2N6343
2N6347
MAC220-7
MAC221-7
2N6344
2N6348
MAC220-9
MAC221-9
2N6345
2N6349
5GV
100 V
SC146B
2N5567
SC146C
SC146D
SC246B
2N5569
SC246C
2N5568
SC246D
2N5570
SC245B
T4121B
SC245C
T4121C
SC245D
T4121D
2N6342A
2N6343A
SC245E
T4121E
SC146M
SC246M
SC245M
T4121M
SC146S
SC246S
SC245S
T4121S
SC146N
SC246N
SC245N
T4121N
2N6345A
100
'100
120
100
100
100
2N6347A
2N6344A
2N6348A
20
50
50
50
25
SO
25
50
50
75#
5Q
41)
50
50
75#
,SO,
25
50
40
25
40
2N6349A
120
40
-
2.$
2:5
2.5
2.5
2.5
2.5
50
50
'50
-
' 25 ,
40
25
40
50
-
\,. 2.5
:' '2.5"
2.5
2.5#
"
2',5
;2.511'
SOOV
,'t...
(AmPll)
2:5
2,5
2.5
51)
MT2i+)G(+)
75
MTl!(+)G(-}
50
7!i
MT2{-)G(-)
MT2{-}G(+)
Z.O
2.0
2,$
Yo, @ we IV
MT2(+)G(+)
M12(+JGH
2.0
2.0
2.5
MTa(-)O(-)
MT2{-lG(+)
50
"
: 2.0
' ',Hi
600,V
!a.@2S"C(MAI
60 '
25
2.5
2,5
2.5
400 V
mv
"
IiO
YD...
IiOOV
SC246E
121)
200Y
aoov
SC146E
.'100
2N6346A
2.S ;:
2.5
2.5
2.5
-
2.5
2.5
2.5,
2,5 '
#Denotes 2N6346-49 and MAC221 Series only.
5-11
'1!.5
2.5
2.5
-
a.S:
-
i
~s:
i~
is:
...1
I
g
~
TRIACs (continued)
r
""'I
ON-STATE (RMS) CURRENT
., I
15 AMPS
,
•
t:.
.~i~OJ
.
,
,
./
.-
,. ,fi
.~'.
..
.
,
.
, .. ' 1:...
25 AMPS
.
17_
.
..
';.
~1I2WIi
' ,",TO-_
_
"
' :~3'1j-01'
. lItyJwa
: "
:',
.',
.
yl<\2, '
,:
:'
SIY"'~
au
4··' 4
--'
~.~
c.a._..
~2
..
50W
J
100 v
200Y
·.V_
2N5571
3OO.Y
",
..V
SC251B
2N5573
SC250B
SC251C
2N5572
SC251 0
2N6145
SC250C
2N5574
SC250D
2N6146
T4120B
MAC15-4
MAC15A4
MAC20-4
MAC20A4
MAC25-4 MAC25A4
T4120C
MAC15-5
MAC15A5
MAC20-5
MAC20A5
MAC25-5 MAC25A5
T4120D
MAC15-6
MAC15A6
MAC20-6
MAC20A6
MAC25-6 MAC25A6
T4120E
MAC15-7
MAC15A7
MAC20-7
MAC20A7
MAC25-7 MAC25A7
T4120M
MAC15-8
MAC15AB
MAC20-8
MAC20A8
MAC25-8 MAC25A8
MAC15A9
MAC20-9
MAC20A9
MAC25-9 MAC25A9
'"
.:'
,,'
SOLI V
SC251E
SC250E
.S8li 'y
SC251M
SC250M
flln
SC251S
SC250S
T4120S
MAC15-9
800 V,
SC251N
SC250N
T4120N
MAC15-10 MAC15Al0 MAC20-10 MAC20Al0 MAC25-10 MAC25Al0
2N6147
.; ~ .:
.-
iT..... · 100
I'
"I
iEj
.50
",*)8,:..) ·:.SO..
50
r.mt+~Gf+1 .
: so '
50
50
80
50
.
50
so
50
:-"
2.0
2,5
2.5.
2.5
2.5
2;5· .
U
2.5
2.5
2.5
2.5
.' is
2.5 .
2.5
2.S
'2.5
Jmt:-t&i+}
2.S
.. ....;...
2,5,
-.
··iitI·
;...
'50
U'
Mm-:)B(-)
..
so
-
. ,2.5
',,',
80
50,
-sa
'
2.5·
5-12
150
:150
,sa
59
Bl}' .
-
'2,5
2.5
"
so
.so
Ml2(+)GH
' tOll
100
,
rm(+j8(+l :50
M1'2( +)Bf~) so·
I~:tI v...@2ft.(V
.
',;
"-
100
!o:t@25"CtMAl
WHG(+)
;r;
100
2.0
'-
'.
:,
50
'15
50
rs
150
'150 .
:
·so . .
•.. 50'
so .:.
~.,
,
"
250
250
70
70
70'
10
10
,
50
.50 .
50
15
-
100
2.0
2-D
2.0
; 2Jl
2.0'
2.0
' 2.0
2.0
2.0
2.0 :.
2.5
;....
, 2.5'
2.0.
2.5
2.0' .
70
-
2.11 '
2.0
'2.5/
\.
/'
ON-STATE (RMS) CURRENT
"""
"
30 AMPS
...
-
.; StyJe 2
40 AMPS
I
~
5rr
~$lt-Ol
Case:31Q.01
SlyI_JI
~3'''O1
StyJe 2
I
f~>'
Styje •
~-4
THYRISTOR CROSS REFERENCE (continued)
PART NO.
MAC35-8
MAC36-1
MAC36-2
MAC36-3
MAC36-4
MAC36-5
MAC36-6
MAC36-7
MAC36-B
MAC37-1
MAC37-2
MAC37-3
MAC37-4
MAC37-5
MAC37-6
MAC37-7
MAC37-8
MAC3B-l
MAC38-2
MAC3B-3
MAC3B-4
MAC3B-5
MAC3B-6
MAC3B-7
MAC38-8
MAC77-1 ,
MAC77-2
MAC77-3
MAC77-4
MAC77-5
MAC77-6
MAC77-7
MAC77-8
MAC5571
MAC5572
MAC5573
MAC5574
MAC40802
MAC40803
MAC40804
MCR106-1
MCR106-2
MCR106-3
MCR106-4
MCR106-5
MCR106-6
MCR106-7
MCR106-8
MCR306-1
MCR306-2
MCR306-3
MCR306-4
MCR306-5
MCR306-6
MCR600-1
MCR600-2
MCR600-3
MCR600-3.5
MCR600-4
MCR80B-l
. MCR80B-2
MCR808-3
MCR808-4
MCRB08-5
MCRB08-6
MCR808-7
MCR808-8
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
2N6159
2N6160
2N6160
2N6160
2N6160
2N6161
2N6161
2N6162
2N6162
2N6157
2N6157
2N6157
2N6157
2N6158
2N6158
2N6159
2N6159
2N6160
2N6160
2N6160
2N6160
2N6161
2N6161
2N6162
2N6162
2N606B
2N6069
2N6070
2N6071
2N6072
2N6073
2N6074
2N6075
2N5571
2N5572
2N5573
2N5574
2N6145
2N6146
2N6147
2N6236
2N6237
2N623B
2N6239
2N6240
2N6240
2N6241
2N6241
2N6236
2N6237
2N6238
2N6239
2N6240
2N6240
MCR102
MCR103
MCR104
MCRl15
MCR120
MCR3818-1
2N5164
MCR3818-3
2N5165
MCR3818-5
2N5166
MCR3818-7
2N5167
PART NO.
MCR808-9
MCR808-10
MCR808R2
MCR808R4
MCR808R6
MCR808R8
MCR1305R2
MCR1305R4
MCR1305R6
MCR1305RB
MCR130B-l
MCR130B-2
MCR130B-3
MCR1308-4
MCR1308-5
MCR1308-6
MCR130B-7
MCR1308-8
MCR130B-9
MCR130BR2
MCR130BR4
MCR130BR6
MCR130BR8
MCR1604-1
MCR1604-2
MCR1604-3
MCR1604-4
MCR1604-5
MCR1604-6
MCR1604-7
MCR1604-8
MCR2305-1
MCR2305-2
MCR2305-3
MCR2305-4
MCR2305-5
MCR2305-6
MCR2305-7
MCR2305-B
MCR2315-1
MCR2315-2
MCR2315-3
MCR2315-4
MCR2315-5
MCR2315-6
MCR2315-7
MCR2315-8
MCR2604-1
MCR2604-2
MCR2604-3
MCR2604-5
MCR2604-6
MCR2604-7
MCR2604-8
MCR2604-B
MCR2604Ll
MCR2604L2
MCR2604L3
MCR2604L4·
MCR2604L5
MCR2604L6
MCR2604L7
MCR2604L8
MCR281B-l
MCR2818-2
MCR2818-3
MCR2818-4
MOTOROLA
MOTOROLA
SII~ILAR
DIRECT
REPLACEMENT REPLACEMENT
MCR3818-9
2N2647-10
2N5164
2N5165
2N5166
2N5167
2N5168
2N5169
2N5170
2N5171
MCR3918-1
2N5168
MCR391B-3
2N5169
MCR391B-5
2N5170
MCR391B-7
2N5170
MCR3918-9
2N516B
2N5169
2N5170
2N5171
2N4183
2N4184
2N41B5
2N41B6
2N4187
' 2N4188
2N4189
2N4190
2N4167
2N4168
2N4169
2N4170
2N4171
2N4172
2N4173
2N4174
2N4167
2N416B
2N4169
2N4170
2N4171
2N4172
2N4173
2N4174
2N4183
2N4184
2N4185
2N4187
2N4188
2N4189
2N4186
2N4190
2N4183
2N4184
2N41B5
2N41B6
2N4187
2N41BB
2N41B9
2N4190
MCR3818-1
2N5164
MCR3818-3
2N5165
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL.
REFER TO CHAPTER 1
6-5
PART NO.
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MCR2818-5
MCR2818-6
MCR2818-7
MCR2818-8
MCR2818R2
MCR2818R4
MCR2818R6
MCR2B1BRB
MCR2B35-1
MCR2B35-2
MCR2835-3
MCR2835-4
MCR2B35-5
MCR2835-6
MCR2835-7
MCR2835-B
MCR291B-l
MCR2918-2
MCR291B-3
MCR291B-4
MCR2918-5
MCR2918-6
MCR2918-7
MCR291B-B
MCR291BR2
-4R2918R4
MCR2918R6
MCR291BR8
MCR2935-1
MCR2935-2
MCR2935-3
MCR2935-4
MCR2935-5
MCR2935-6
MCR2935-7
MCR2935-B
MCR3000-1C
MCR3000-2
MCR3000-3C
MCR3000-4
MCR3000-5C
MCR3000-6
MCR3000-7C
MCR3000-B
MCR3000-9C
MCR3000-10C
MCR3818,R-2
MCR3818,R-4
MCR3818,R-6
MCR3818,R-8
MCR3835-3
MCR3835-4
MCR3835-6
MCR3835-8
MCR391B,R-2
MCR3918,R-4
MCR391B,R-6
MCR391B,R-8
MCR3935-3
MCR3935-4
MCR3935-6
MCR3935-8
MCR4018-3
MCR401B-4
MCR401B-5
MCR4018-6
MCR4018-7
MCR3818-5
2N5166
MCR3818-7
2N5167
2N5164
2N5165
2N5166
2N5167
MCR3B35-1
MCR3B35-2
2N3B7O
2N3871
MCR3B35-5
2N3872
MCR3B35-7
2N3B73
MCR391B-l
2N5168
MCR3918-3
2N5169
MCR3918-5
2N5170
MCR3918-7
2N5171
2N516B
2N5169
2N5170
2N5171
MCR3935-1
MCR3935-2
2N3896
2N3897
MCR3935-5
2N3898
MCR3935-7
2N3899
MCR3000-1
2N4441
MCR3000-3
2N4442
MCR3000-5
2N4443
MCR3000-7
2N4444
MCR3000-9
MCR3000-10
2N5164
2N5165
2N5166
2N5167
2N3870
2N3871
2N3872
2N3873
2N516B
2N5169
2N5170
2N5171
2N3B96
2N3B97
2N3B98
2N3B99
2N6167
2N6168
2N6169
2N6169
2N6170
THYRISTOR CROSS REFERENCE (continued)
PART NO.
•
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
MCR4018·8
MCR4035-3
MCR4035-4
MCR4035·5
MCR4035-6
MCR4035-7
MCR4035·8
MPT20
MPT24'
MPT28
MPT32
MPT36
MPU231
MPU232
MPU233
MU970
MU971
0200E3
0201014
02025G
02025H
02040D
0401014
04025G
04025H
04040D
0501014
05025G
05025H
0601014
06015G
06015H
06040D
S0301MS3
S0303lS2
S0303lS3
S030Bl
S0325C
S0325G
S0325H
S0335G
S0335H
S0501MS3
S0503lS2
S0503lS3
S0525C
S0525G
S0525H
S0535G
S1001MS3
S1003lS2
S1003lS3
S1008l
S1025C
S1025G
S1025H
S1035G
S2001MS3
S2003lS2
S2003lS3
S2025C
S2025G
S2025H
S2035G
S2035H
S2800A SERIES
S40068
2N6170
2N6171
2N6172
2N6173
2N6173
2N6174
2N6174
1N5758
1N5759
1N5760
1N5761
1N5762
2N6116
2N6117
2N6118
2N2646
2N2647
MAC92-4
2N6346A
MAC37-4
MAC38-4
MAC40688
2N6347A
MAC37-6
MAC38-6
MAC40689
MAC10-7
MAC37-7
MAC38-7
2N6348A
MAC40797
MAC40798
MAC40690
MCR1906-1
MCR106-1
MCR106-1
MCR3000-1
MCR649-1
MCR3835-1
MCR3935-1
MCR3835-1·
MCR3935-1
MCR1906-2
MCR106-2
MCR106-2
MCR649-2
MCR3835-2
MCR3935-2
MCR3835-2
MCR1906-3
MCR106-3
MCR106-3
MCR3000-3
MCR649-3
MCR3818-3
MCR3896
MCR3870
MCR1906-4
MCR106-4
MCR106-4
MCR649-4
MCR3818-4
MCR3897
MCR3871
MCR3897
NOTE 1
MCR729-6
PART NO.
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
S4008l
S4025C
S4025G
S4025H
S4035G
2N3872
S4035H
2N3898
S5OO68
S5008l
S5025C
S5025G
S5025H
S5035G
MCR3835-7
S5035H
MCR3935-7
S60068
S6025G
S6025H
S6035G
2N3873
S6035H
2N3899
S6200A SERIES NOTE 1
S6210 SERIES NOTE 1
S6220A SERIES NOTE 1
SC141
NOTE 1
SC141A SERIES NOTE 1
SC141A1
SC141A
SC1418
SC14181
SC1418 SERIES NOTE 1
SC141C
SC141C1
SC141C SERIES NOTE 1
SC141D
SC141D1
SC141D SERIES NOTE 1
SC141E
SC141E1
SC141E SERIES NOTE 1
SC141M
SC141M1
SC141M SERIES NOTE 1
SC146A
SC146A1
SC146A SERIES NOTE 1
SC1468
SC14681
SC1468 SERIES NOTE 1
SC146C
SC146C1
SC146C SERIES NOTE 1
SC146D
SC146D1
SC146D SERIES NOTE 1
SC146E
SC146E1
SC146E SERIES NOTE 1
SC146M
SC146M1
SC146M SERIES NOTE 1
SC245 SERIES NOTE 1
SC246 SERIES NOTE 1
SC250 SERIES NOTE 1
SC251 SERIES NOTE 1
SC260 SERIES NOTE 1
SC261 SERIES NOTE 1
S0303lS2
S0503lS2
S1003lS2
S2003lS2
S4003lS2
S6003lS2
T2300A
T23008
T2300C
T2300D
T2300E
T2300F
T2300M
T2301A
T23018
DEVICES NOT SHOWN IF MOTOROLA NUMBER IS IDENTICAL;
REFER TO CHAPTER 1
MCR3000-6
MCR649-6
2N3872
2N3898
MCR729-7
MCR3000-7
MCR649·7
MCR3835-7
MCR3935-7
MCR729-8
MCR3835-8
2N3899
PART NO.
MOTOROLA
MOTOROLA
DIRECT
SIMILAR
REPLACEMENT REPLACEMENT
T2301C
T2301D
T2301E
T2301F
T2301M
T2302A
T23028
T2302C
T2302D
T2302E
T2302F
T2302M
T2500 SERIES
T2800 SERIES
T2801 SERIES
T2802 SERIES
T2850A
T28508
T2850D
T4120 SERIES
T412i SERIES
T6400 SERIES
T6401 SERIES
T6410 SERIES
T6411 SERIES
T6420 SERIES
T6421 SERIES
NOTE r
NOTE 1
NOTE 1
NOTE 1
T2301PC5
T2301PD5
T2301PE5
T2301PF5
T2301PM5
T2302PA5
T2302P85
T2302PC5
T2302PD5
T2302PE5
T2302PF5
T2302PM5
2N6346A
2N6346A
2N6347A
NOTE 1
NOTE 1
NOTE 1
NOTE 1
NOTE 1
NOTE 1
NOTE 1
NOTE 1
MCR106-1
MCR106-2
MCR106-3
MCR106-4
MCR106-6
MCR106-8
T2300PA5
T23OOP85
T2300PC5
T2300PD5
T2300PE5
T2300PF5
T2300PM5
T2301PA5
T2301PA5
NOTE 1: MOTOROLA DEVICE NUMBERS IDENTICAL
6-6
Thyristor Data Sheets
7-1,
II
IN 5758, A
thru
IN5762,A
DIACS
BIDIRECTIONAL DIODE THYRISTORS
two-terminal 3-layer devices that exhibit bidirectional negative resistance switching characteristics_ These economical, durable
devices have been developed for use in thyristor triggering circuits
for lamp drivers and universal motor' speed controls.
o Switching Voltage Range - 20 to 36 Volts Nominal
o Symmetrical Characteristics
.. Passivated Surface for Reliability and Uniformity
*MAXIMUM RATINGS (TA = 25 0 C unless otherwise noted)
Rating
Symbol
Peak Pulse Current
130 IlS duration, 120 Hz
Value
Unit
MT1
Amp
Ipulse
MT2
2.0
repetition rate)
P~wor Dissipation @ T A = -40 to +2SoC
300
4.0
mW
mW/oC
TJ
-40 to +100
°c
T stg
-40 to +150
°c
Po
Derate above 2SoC
Operating Junction Temperature Range
Storage Temperature Range
T
Symbol
Characteristic
IT A
lN5758
lN5759
lNS760
lN5761
lN5762
lN5758A
lN5759A
lN5760A
lN5761A
lN5762A
IS
CI
1 N5758/5762
1 N5758A/5762A
(Both Directions)
= IS to 1=
10mAI
lN5758.A,1 N5759.A
lN5760.A.61.A,62.A
Leakage Current
16
20
24
28
32
18
22
26
30
34
24
28
32
36
40
22
26
30
34
38
-
100
25
5.0
7.0
-
Peak Pulse Amplitude (Rgure 11
(Both POlarities)
lN5758.A,IN5759,A
1 N5760.A.61.A.62.A
K
1
·0
j 0
I SECT. A·A
Il A
10
Volts
(Vs+I-IVS-1
lN5758/5762
1 N5758A15762A
Unit
STYLE J:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
Volts
-
(Both Directionsl.IApplied Voltage = 14 Voltsl
---
Il A
18
Switching Voltage Symmetry
T
Volts
EN
Switching Voltage Change
(1".1
Max
Vs
Switching Current
(Both Directions)
= -40to+75 0
Min
,----
SEATING
PLANE
*E:LECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Switching Voltage
(Both Directions)
1
A
,
-
±4.0
±2.0
3.0
5.0
-
Volts
-'ndlcatosJEDEC Registered Data.
7-2
DIM
A
0
J
K
MILLIMETERS
MIN
MAX
4.45
0.41
.2.29
12.70
4.70
0.48
2.79
INCHES
MAX
MIN
0.175
0.DI6
0.090
·0.500
CASE 182-03
0.185
0.DI9
0.110
1N5758,A thru 1N5762,A
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - PEAK PULSE AMPLITUDE TEST CIRCUIT
FIGURE 2 - VOLT·AMPERE CHARACTERISTICS
Cl
Rl
1(+)
"
10 k
I
I
f-~v+-:
I
10mA - - - - - -
Oiodo
Under
50 V
R2
VI-) -~~==::~::;:;;:::=;:::::fr~-=-=-=:-T===~l;_V(+)
r---i
V out
lOOn
Test
I
I
Vs
ls
I
____ J 10mA
T
Reverse
FIGURE 3 - BREAKDVER VOLTAGE BEHAVIOR
Forward
IC-)
FIGURE 4 - NORMALIZED OUTPUT VOLTAGE BEHAVIOR
2.0
20
""11!
"
~
w
1.5
N
::l 15
""~
">to
1.0
~::l
I
'-
"
IS" IOmA
W
to
0.9
~Ev'ERSE
z 0.8
:;:
~
0.7
~c;j
0.6
""
"
~
;;;
-
FORWARD
--.........
I=;--FORWARD
W
to
~""
>
~
">'"
10
09
~ERSE
--=-
---(-....
.......
08
~
07
U6
>
0.5
-40
-20
40
20
60
05
-40
100
80
-20
TJ. JUNCTION TEMPERATURE (DC)
FIGURE 5 - SWITCHING TIMES
~
II
150k
REVERSE
70
'">=
w
w
60
50
~
"'
,,;
40
0.3.F-:J'
il'---,
II
FORWAiiD"
60
100
L1Q-~~r-~----------,
~
Load
6.0 to 900
Watts
10%
~ R(
tr
"ADJUSTED FOR Ip
.............
-
--
117 V Ac
60 Hz
Motorola
Bilateral
Trigger
0.021'F
• 20
10
o
L26----~~---~------~
0.1
'"
FIGURE 6 - CONTROL CIRCUIT
30
0.05
80
RL
TJ - 25 0 C
80
40
TJ. JUNCTION TEMPERATURE (DC)
100
90
20
0.2
0.3
0.5
1.0
Ip. PEAK CURRENT (AMPERES)
2.0
3.0
5.0
7-3
Motorola
2N6148
Triac
2N681
thru
2N692
SILICON
CONTR.DLLED RECTIFIER
REVERSE BLOCKING TRIODE THYRISTORS
designed primarily for half·wave ac control applications, such
as motor controls, heating controls and power supplies; or where·
ever half·wave silicon gate·controlled, solid·state devices are needed .
25 AMPERES RMS
25·800 VOL TS
• Glass Passivated Junctions and Center Gate Fire for Greater Para·
meter Uniformity and Stability
• Blocking Voltage to 800 Volts
MAXI MUM RATINGS (T J = 125°C unless otherwise noted)
Rating
•
'Peak Repetitive Off·State Blocking Voltage (1)
2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N68B
2N689
2N690
2N691
2N692
·Peak Non-Repetitive Reverse Voltage
2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
"AMS On-State Current (All Conduction Angles)
Symbol
VRRM
or
VORM
Value
Unit
Volts
25
50
100
150
200
250
300
400
500
600
700
800
Volts
VRSM
35
75
150
225
300
350
400
500
600
720
840
960
IT(RMS)
25
Amp
IT(AV)
16
Amp
·Peak Non-Repetitive Surge Current
(One cvcle, 60 Hz, preceded and followed
by rated current and voltage)
ITSM
150
Amp
Circuit Fusing Considerations
(T J = -40 to +1250 C, t = 1.0 to 8.3 ..;,)
12 t
93
A 2,
-Average On-State Current (TC - 6SoC)
·Peak Gate Power
* Average Gate Power
·Peak Forward Gate Current 2N681·2N689
2N690-2N692
"Peak Gate Voltage - Forward
Reverse
·Operating Junction Temperature Range
·Storage Temperature Range
Stud Torque
PGM
5.0
Watts
PG(AV)
0.5
Watt
IGM
2.0
1.2
Amp
VFGM
VRGM
10
5.0
Volt,
TJ
-65 to +125
uC
T stg
-65 to +150
°c
-
30
in. lb.
MILLIMETERS
INCHES
MIN
MIN
MAX
MAX
A 15.34 15.60 0.604 0.614
B
14.00 14.20 0.551 0.559
C 26.67 30.23 1.050 1.190
F
3.43 4.06 0.135 0.160
2.29 REF
0.090 REF
H
J
10.67 11.56 0.420 0.455
15.75 17.02 0.620 0.670
K
7.62 8.89 o..OU! 0.• 5
l
n
1.4
2.16 U.U~~ ! 0.08
1.65 REF
R
0.065 REF
T 12.73 12.83 0.501 0.505
DIM
STYLE 1:
PIN 1. CATHODE
2. GATE
3. ANODE
CASE 263-03
7-4
2N6al thru 2N692
THERMAL CHARACTERISTICS
Characteristic
Max
Symbol
Thermal Resistance, Junction to Case
Unit
2.0
ElECTR ICAl CHARACTERISTICS (T J = 25°C unless otherwise
noted'!
Characteristic
Symbol
-Average Forward or Reverse Blocking Current
(R.ted VORM or VRRM. gate open •
. TJ = 125°C)
Typ
Min
Max
Unit
mA
IO(AV).IR(AV)
-
2N681·2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
Peak Forward or Reverse Blocking Current
(Rat~d VORM or VRRM. gate open. T J = 125°C)
-
-
-
-
-
6.5
6.0
5.5
5.0
4.0
3.0
2.5
2.25
2.0
-
-
2.0
-
-
-
-
-
-
mA
IORM.IRRM
·Peak On-State Voltage
(lTM = 50.3 A peak. Pulse Width .. 1.0 ms.
Outy Cycle .. 2.0%)
VTM
Gate Trigger Current. Continuous de
IGT
mA
-
-
40
80
-
0.65
-
2.0
3.0
0.25
-
-
IH
-
7.3
50
mA
dv/dt
-
30
-
VII's
(VAK = 12 Vdc. RL = 50 nJ
"(VAK = 12 Vdc. RL = 50 n.TC = -65°C)
-
Gate Trigger Voltage, Continuous de
·(VAK = 12 Vdc. RL = 50 nJ
Volts
2.0
Volts
VGT
"(VAK = 12 Vdc. RL = 50 n. TJ = -65°C)
·Gate Non-Trigger Voltage
Volts
VGO
(Rated VORM. RL = 50 n. TJ = 125°C)
Holding Current
(VAK = 12 Vdc. Gate Open)
Critical Rate of Rise of Off·State Voltage
(Rated VORM. Exponential Waveform, T J
= 125°C,
Gate Open)
·Indicates JEDEC Registered Data.
FIGURE 2 - MAXIMUM ON·STATE POWER DISSIPATION
FIGURE 1 - AVERAGE CURRENT DERATING
125
~
G
...
~115
w
" "
'"
~ 105
~
95
~
85
'"'"
~~
I'..
~
....
w
a: 300
r-.;;:
~~
1'..'
S24
~
,.
90·
§
"
dc_
r-.... I"
.'"
.
-
ffi
i'... r-....
'I r-....
1200
1 II
>
o
II
2.0
4.0
6.0
8.0
10
12
I
14
I -lcrl-; ---r---t--+-:-I7'~"'T-""7'"
CON~UCTION ANGLE
12r----t----+~~~~~~~+_--~~--_+--~
TJ.125·C
:;;8.0r---t--,..r..51111""1""'-_+--+_-~~-_+-~
$
IS>
~ 65
• =
ffi20r----t----+----~--_+~~~~~~""7~--~
o
~ 16r----t----+---,~~~~~~~~~--_+--~
L
t'-,.
180·
A
;;;28
- -
:-"
I'...:
"-0 '-..,: i'...
75
55
-
-
• = CON~UCTION ANGLE
60
::>
X
A-1"1-
...... ~ ~
'"::>
~r---r--.--.---r--.--.---r--'
L
"'iil'llll ...
:""IIi lSI.!
... 4.0\---:l..,.."f---\---+--+-----j---j--+--{
16
2.0
IT(AV). AVERAGE ON·STATE CURRENT (AMP)
6.0
8.0
10
12
IT(AV). AVERAGE ON-STATE CURRENT (AMPS)
7-5
14
16
2N681 thru' 2N692
FIGURE 3 - ON-STATE CHARACTERISTICS
FIGURE 4 - MAXIMUM'NON-REPETITIVE SURGE CURRENT
10q
150
70
Ii:
~
-
20
i
:::: 10
a:
~
z
7.0
5.0
~'"
~
"' '"
1=60Hz
120
-
~110
If
VLY\.=
I CYCLEl
.........
.......
~
SURGE IS PRECEDED AND
FOLLOWED BY RATED
CURRENT AND VOLTAGE
.........
.......
......
100
1.0
3.0
2.0
I
4.0
6.0
B.o
10
NUMBER OF CYCLES
I
o
~ 3.0
~
;!;
5.:
250 C
I .
o
Z~
~ 130
II
!z
"
'"a:to
TJ=1250 C /
~
~
ffi
a:
/
30
~
~14D
~
50
I
I
2.0
L
.
•1::" 1.0
,
0.7
I
0.5
I
I
0.3
I
0.2
•
I
0.1
1.4
1.B
2.2
2.6
3.0
VTM, MAXIMUM INSTANTAN EOUS ON-STATE VO LTAG E (VOLTS)
1.0
FIGURE 5 - THERMAL RESPONSE
UJ
~
~
iii
1.0
0.7
0.5
...-
0.3
ko-"'"
~c 0.2
<'"
",!:>!
ffi ~
"''''
i-""
0.1
Z9JC(t) = R9JC. r(l)
:: ~ 0.07
ffi - 0.05
in
:'i 0.03
'"
I-
~
0.02
0.01
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
1.0
20 3D
50
I, TIME (m~
7-6
100
200
300
500
1.ok
2.ok 3.0k 5.ok
10k
2N681 thru 2N692
,
TYPICAL CHARACTERISTICS
FIGURE 7 - GATE TRIGGER CURRENT
FIGURE 6 - PULSE TRIGGER CURRENT
100
10
~
=
OFF·STATE VOLTAGE -12 V
RL'50n-
50
5 30 "\.
~~
20
~
=>
'-'
,
I""'---
\
OFFISTATEIVDLT~GE 'li V
RL'?On-
i'-.........
TJ' -55 0 C
I
r....
IIII
'" 10
!;(
t::I
2.0
.......
25°C
7.0
..........
~ 5.0
'-....
r-
~
3.0
.- 2.0
'"
1.0
0.2
0.5
1.0
h11+
IIII
2.0
5.0
10
'-....
.-
........
20
50
100
2.0
-60
200
..........
-40
-20
FIGURE 8 - GATE TRIGGER VOLTAGE
1.0
~
~
0.8
r-....
'"
~
o
>
ffi
DFF1TATE
r--.....
~
a;
BO
100
120
140
FIGURE 9 - HOLDING CURRENT
lOLTA~E' Jv-
OFIF-STATIE
VOL~AGE ,112 V
RL'50n-
I 'r-.......
. . . 1'
........
60
20
RL' 50 n
0.6
40
TJ. JUNCTION TEMPERATURE IDe)
PULSE WIDTH 1m,)
~
20
I-....
..........
t-....
r--....
...........
I-
'"~ 0.4
..:
......
.............
r--.......
...........
3.0
~
0.2
-60
-40
-20
20
40
60
BO
100
120
2.0
-60
140
-40
-20
10
40
60
BO
TJ. JUNCTION TEMPERATURE IDe)
TJ. JUNCTION TEMPERATURE IDe)
7-7
100
120
140
2N1595
thru
2N1599
G
A
o>-----1.M~::.....----ft"",~+-----+---.,--+-----+-''t---+------i
~~'10
~~
"'~~100~---+--~;-~~~~-P~--+-
"'-
~ ~ 80
-'I-
"''''
~~
901---+--- 30
~ I-
SO
:5 ~
120f-"l-",......,r-
°,.
j!;;(
-600 •
"'ffi
90·
I
~I?!~"S;". 39. S9.CIRCUIT _---';"'--'!-ISo"-il-""',-+----,
SO~----+-----~~~~~~~~--+-----+---~
"'~
"''''
~ ~ 401-----1-----1--'1.-1'<-....."''''''''----."...0;:---+-----1
«
'"
RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz
70 121 CASE TEMPERATURE MEASURED AT CENTER -t--+-"...-l
OF BDnOM OF CASE
60 (3) 12SoC JUNCTION TEMPERATURE
"1.4
I.S
1.0
1.2
o
0.2
0.4
O.S
O.S
~
201-----1-----1----J~~--~~~
°0L---~OL"I----~0~"2~--~----~0~.4----~0~.~~--~0~.S~--,,:0.7
IFIAVI. AVERAGE FORWARO CURRENT IAMPI
IFIAVI, AVERAGE FORWARD CURRENT IAMPI
7-9
2N1842
thru
2N1850
Ac
SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING TRIODE THYRISTOR
designed primarily for half-wave ac control applications, such
as motor controls, heating controls and power supplies; or whereever half-wave silicon gate-controlled, solid-state devices are needed.
16 AMPERE RMS
25-500 VOLTS
• Glass Passivated Junctions with Center Gate Geometry for
Greater Parameter Uniformity and Stability
• Blocking Voltage to 500 Volts
. MAXIMUM RATINGS ITJ = 10o"C unless otherwise noted I
Rating
··Peak Repetitive Forward or Reverse Blocking
Voltege {II
2N1842
2NI843
2NI844
2NI845
2NI846
2NI847
2NI848
2NI849
2N1850
*Non·Repetitive Peak R,8verse Voltage
2NI842
2NI843
2NI844
2NI845
2NI846
2NI847
2NI848
2NI849
2NI850
• Average OnoState Current (TC = 35u CI
Symbol
25
50
VAAM
100
160
200
250
300
400
500
Volts
VASM
'
~
A~
35
75
150
225
300
350
400
500
600
*,..eak Non-Repetitive Surge Current
•
Unit
Volt.
Value
VOAM
or
lOne cycle, 60 Hz, preceded and followed
B T
ITIAVI
ITSM
10
125
Amp
Amp
12,
60
A 2s
PGM
5.0
0.5
2.0
Watts
Watt
Amp
10
5.0
Volts
-40 to +100
uC
by rated current and voltage)
Circuit Fusing
{TJ = -40 to +1 OOoC, t = 1.0 to 8.3 mol
·Peak Gate Power
... Average Gate Power
PGIAVI
IGM
·Peak Forward Gate Current
·Peak Gate Voltage - Forward
Reverse
·Operating JUnction Temperature Range
VFGM
VAGM
TJ
T stg
·Storage Temperature Range
°c
-40 to +125
THERMAL CHARACTERISTICS
Characteristic
Thermal Aesistance, Junction to Case
I
I
Symbol
ASJC
I
I
Max
2.0
I
I
Unit
°CIW
{I I VOAM and VAAM for .n types can be applied on a continuous de basis without
incurring damage. Ratings apply for zero or negative gate voltage. Devices should
not be tasted for blocking capability In a manner such thet the voltage supplied
exceeds the rated blocking voltage.
"Indicate. JEOEC Aagistered Data.
DIM
A
B
C
F
H
J
K
L
Q
R
T
MILLIMETERS
MIN
MAX
15.34 15.60
14.00 14.20
26.67 30.23
3.43 4.06
2.29 REF
10.67 11.56
15.75 17.02
7.62 B.••
1.4U
2.16
1.65 REF
12.73 12.B3
INCHES
MIN
MAX
0.604 0.614
0.551 0.559
1.050 1.190
0.135 0.160
0.090 REF
0.420 0.455
0.620 0.670
0.300 _0~50
0.OB5
U.U"
0.065 RE>
0.501 0.505
STYLE 1:
PIN 1. CATHODE
2. GATE
3.ANDDE
CASE 263-03
7-10
2N1842 thru 2N1850
ELECTRICAL CHARACTERISTICS (TC = 25°C unle.. otherwise noted.)
Symbol
Characteristic
"Average Forward or Rove ..... Blocking Current
IO(AV),1R(AV)
(VO 2 Rated VORM. VR = Rated VRRM.TC = 35°C)'
2NI842
2NI843
2NI844
2NI845
2N1B46
2NI847
2NI848
2NI849
2N1850
Peak Forward or Reverse Blocking Current
Min
Typ
Max
-
-
22.5
19
12.5
6.5
6.0
5.6
5.0
4.0
3.0
-
-
-
-
Unit
mA
mA
IORM,IRRM
(VO Rated VORM. Vb = Rated VRRM. gate open.
TC = 100°C) I
"Peak On-5tate Voltaga
(ITM· 31.4 A peak. Pulse Width"; 1.0ms.
Outy Cycle"; 2.0')6)
Gate Trigger Current. Continuous de
(VO = 12 Vdc. RL = 50 .n)
"(VO = 12 Vdc. RL = 5O.n. TC = -4DoC)
Gate Trigger Voltage. Continuous de
(VO = 12 Vdc. RL = 50.n)
"lVo = 12 Vdc. RL = 5O.n. TC = -40°C)
"(VO RatedVORM. RL = 5O.n. TC = 100°C)
-
-
-
VTM
6.0
2.5
-
Volts
mA
IGT
-
6.0
-
0.65
VGT
-
IH
(VO = 12 Vdc. Gate Open)
Critical Rate of Rise of Off·State Voltage
(VO = Ratad VORM. Exponential Waveform.
TC = IODoC. Gate Open)
-
7.0
30
-
-
mA
-
dv/dt
Voits
3.5
-
0.3
Holding Current
80
150
VII'S
*lndiCBtes JEDEC Registered Data.
FIGURE 1 - AVERAGE CURRENT OERATING
FIGURE 2 - GATE TRIGGER CURRENT
~100~~-r----r----r----r----r----r---~----'
2.0
Off~TATEIVOLT~GE = Ii V
or
'"
:::>
i
RL=50n-
80
::;;
~
0
'" 60
~
~---t--~~~~~
i
0
40
~---+----I--
.....
~
0
~
...
......
INDUCTIVE LOAD, 50 TO 400 CPS
0~0--~----~--~--~--~10----1~2--~1~4--~16
2.0
·60
·40
·20
ITIAV). AVERAGE fORWARD CURRENT lAMPS)
10
offlTATE
0.8
>
~ 0.6
'"
!;;:
lOLTA~E'
lJ V_
RL = 50"
80
100
120
140
OF 1f-8TAT 1E VOLiAGE = \2 V
RL=50n-
1
.... 10
r---......
~
or
.......
"'....a;
60
FIGURE 4 - HOLOING CURRENT
...... r---......
o
40
20
. . . r--....,
"'~
20
TJ. JUNCTION TEMPERATURE loC)
FIGURE 3 - GATE TRIGGER VOLTAGE
~
~
.........
0
DC. 1¢. 3.t>. 641. CIRCUIT·RESISTIVE OR
~
::;;
.2
1"-
'
~ 20~--~---+---1----r---+---~--~~~
::;;
•
__r-~~~~~~~~~
<.)
'"
r--....
a
.........
....
"'z
.9o 5.0
........
r--..
~
'"~
0.4
"'...:
3.0
$'
0.2
·60
·40
·20
20
- 40
60
80
100
120
2.0
·60
140
TJ. JUNCTION TEMPERATURE loC)
·40
·20
~
40
W
~
TJ. JUNCTION TEMP~RATURE loC)
7-11
~
W
140
2N1842A
thru
211850A
Ao
REVERSE BLOCKING TRIODE THYRISTOR
designed primarily for half·wave ac control applications, such
as motor controls, heating controls and power supplies; or where·
ever half·wave silicon gate·controlled, solid·state devices are needed.
• Glass Passivated Junctions. with Center Gate Geometry for
Greater Parameter Uniformity and Stability
• . Blocking Voltage to 500 Volts
• Junction Temperature Rated
@
SILICON CONTROLLED
RECTIFIERS
16 AMPERE RMS
26 - 500 VOLTS
1250 C
MAXIMUM RATINGS ITc= 125°C unless otherwise noted.}
Rating
Symbol
·Peak Repetitive Forward or
Reverse Blocking Voltage (1)
2N1842A
2NI843A
2N1844A
2NI845A
2NI846A
2NI847A
2NI848A
2NI849A
2N1850A
·Non-Repetitive Peak Reverse Voltage
•
Unit
Value
Volts
VORM
or
VRRM
25
50
100
150
200
250
.300
400
500
Volts
VRSM
2NI842A
2NI843A
2N1844A
2N1845A
2NI846A
2NI847A
2NI848A
2NI849A
2N1850A
35
75
150
225
300
350
400
500
600
• Average On·Stete Current (T C = 80°C)
·Peak Non-Repetitive Surge Current
IT(AV)
10
Amp
ITSM
125
Amp
12t
60
A 2,
(One cycle. 60 Hz. preceded and followed
bV rated current and voltage)
Circuit Fusing
(TJ = -65 to +1250 C, t
= 1.0 to 8.3 msl
·Peak Gate Power
• Average Gate Power
·Peak Forward Gate Current
·Peak Gate Voltage - Forward
Reverse
·Operating Junction Temperature Range
·Storage Temperature Range
PGM
5.0
Watts
PG(AVI
0.5
Watt
IGM
2.0
Amp
VFGM
VRGM
TJ
10
5.0
Volts
-65 to +125
vc
T stg
-65 to +126
°c
A
THERMAL CHARACTERISTIC
Characterlstio
Thermal ResistancB, Junction to Case
I
Symbol
1
R8JC
J
J
Max
2.0
DIM
l
l
B
C
F
H
J
K
Unit
°CIW
(1 I VORM and VRRM for a" types can be applied on a continuous de basis without
incurring damage. Ratings apply for zero or negative gate voltage. Devices should
not be tested for blocking capability in a manner such that the voltage suppUed
exceeds the rated blocking voltage.
*Indicates JEDEC Registered Data.
L
n
R
T
MILLIMETERS
MAX'
MIN
15.34 15.60
14.00 14.20
26.67 30.23
3.43 4.06
2.29 REF
10.67 11.56
15.75 17.02
7.62 8.89
1.40 2.16
1.65 REF
12.73 12.83
INCHES
MIN
MAX
0.604 0.614
0.551 0.559
1.050 1.190
0.135 0.160
0.090 REF
0.420 0.455
0.620 0.670
0.• 00 0.30"
0.055 0.085
0.06 REF
0.501 0.505
STYLE 1:
PIN 1. CATHODE
2. GATE
3.ANODE
CASE 263·03
7-12
2N1842A thru 2N1850A
(TC = 126·C unl... oll1_i.. noted.1
ChII,_iotic
Symbol
Min
• Average Forward or Reverse Blocking Current
'O(AVI.'R(AVI
(VO = Rated VORM or VR = Rated VRRM.
llllto open. TC - 12SoC)
2NI842A
2NI843A
2NI844A
2NI845A
2NI846A
2NI847A
2NI84BA
2NI849A
2N1850A
ELECTRICAL CHARACTERISTICS
Typ
Max
-
-
22.5
19
12.5
6.5
6.0
5.5
5.0
4.0
3.0
-
6.0
2.5
-
6.0
-
80
150
-
0.65
-
-
Peak Forward or Reverse Blocking Current
Unit
rnA
rnA
'ORM.'RRM
(VO = Rated VORM or VR = Rated VRRM.
gate open. TC = 125°C) ,
• Peak On-State Voltage
IiTM =31.4 A peak. Pulse Width" 1.0 ms.
Duty Cvcle" 2.0%1
Gate Trigger Current. Continuous de
(VO = 12 Vdc. RL = 50 n)
'VO = 12 Vdc. RL ~ 50 n;TC = -65°C)
Gate Trigger Voltage, Continuous de
(VO = 12 Vdc, RL = 50 n)
'(VO = 12 Vdc. RL = 50 n. TC = -40°C)
• (VO = 12 Vdc, RL = 50 n, TC = _65°C)
'(VO = Rated VORM. RL = 50 n. TC = 1250 CI
-
VTM
Volts
mA
IGT
Volts
VGT
-
-
Holding Current
-
-
7.0
30
-
mA
'H
(VO = 12 Vdc, Gate Open)
Critical Rate of Rise of Off-State Voltage
3.5
3.7
-
0.25
-
dV/dt
-
V/~S
(Vo = Rated VORM Exponential VVaveform.
TC
= 1250 C. Gate Open)
·Indicates JEDEC Registered Data.
FIGURE 1 - AVERAGE CURRENT DERATING
U 140 r---,---..,---,.--"T"""--,--"T"""--,.----,
FIGURE 2 - GATE TRIGGER CURRENT
2.0
!!..
'"::>
'"
i
~
'"<
DC,
130
125
120
I~. 3~. 6~, CIRCUIT·RESISTIVE DR
INDUCTIVE LOAD, 50 TO 400 ~PS
l...
z
~
"~
'"~
~
<
:;;
::>
:;;
x
<
:;;
~
I'
110
ffi
100
OFFISTATEIVOLT~GE. IJ V
0
RL,5O<>-
r-....
.......
70
.......
'"to
90
~ 5.0
80
'"~
.........
............
to
............
~3 0
DC
70
60
.......
.........
20
.2
4
10
14
12
16
,SO
-40
-20
IT(AV). AVERAGE FORWARO CURRENT (AMPS)
1.0
~
0
~ 0.8
r--....
to
«
~
>
ffi
OFF1TATE
r-....
0.6
........
............
to
to
..."'
'"~
......
100
120
140
~2
............
OF1F.STAT1E VOLiAGE'
V
RL' 50 n-
".....
0.4
80
20
IJV_
RL' 50!!
........
so
FIGURE 4 - HOLDING CURRENT
lOLTA~E'
i""--..
40
TJ, JUNCTION TEMPERATURE (OC)
FIGURE 3 - GATE TRIGGER VOLTAGE
0;
20
......
i""--..
..........
to
..:
to
..........
3.0
>
0.2
-SO
-40
-20
20
40
so
80
100
120
2.0
-SO
140
TJ, JUN.cTION TEMPERATURE 1°C)
I
-40
-20
20
40
so
80
TJ. JUNCTION TEMPERATURE (OC)
7-13
100
120
140
•
212322
thru
212329
SI LICON .cONTROLLED
RECTIFIER
REVERSE BLOCKING TRIODE THYRISTOR
1,6 AMPERE RMS
25 thru 400 VOLTS
· .. all-diffused PNP devices designed for gating operation in mAl
pA signal or detection circuits.
•
Low·Level Gate Characteristics
IGT = 200 pA (Maxi @ 250 C
•
Low Holding Current - IH = 2.0 mA (Maxi @25 0 C
• Anode Common to Case
• Glass·to·Metal Bond for Maximum Hermetic Seal
*MAXIMUM RATINGS (TC
=
250 C unless otherwISe noted RGK
Symbol
Rating
Peak Repetitive Forward and Reverse
Blocking Voltage
(Notes 2 and 3)
Non- Repetitive Peak Reverse Blocking Voltage
•
VRRM
25
50
100
150
200
250
300
400
Volts
VRSM
40
75
150
225
300
2N2322
2N2323
2N2324
2N2325
2N2326
2N2327
2N2328
2N2329
RMS On-State Current
Unit
Volts
VORM
or
2N2322
2N2323
2N2324
2N2325
2N2326
2N2327
2N2328
2N2329
(t" 5.0 ms, Notes 2 and 3)
= 1000 ohms)
Value
350
400
500
IT(RMS)
1.6
Amp
(All Conduction Angles)
Average On-State Current
=85 0 C
= 300 C
Peak Non-Repetitive Surge Current
(One Cycle,l!O Hz, T C
Amp
IT(AV)
TC
TA
=BOaC)
1.0
0.45
ITSM
15
Amp
PGM
0.1
0.01
Watt
Preceded and followed by rated current
and voltage
Peak Gate Power
Average Gate Power
PG(AV)
Peak Gate Current
IGM
Peak Gate Voltage
VGM
0.1
6.0
Operating Junction Temperature Range
Storage Ten,perature Range
Lead Solder Temperature
TJ
-65 to +125
TstQ
-65 to +150
-
+230
(>1/16" from case, 10 s max)
Watt
Amp
Volts
°c
°c
uc
STYLE 3:
PIN 1. CATHODE
2. GATE
3. ANODE (CONNECTED TO CASEI
MILLIMETERS
MIN MAX
8.89 9.40
B
8.00 8.51
6.10 6.60
C
0
0.406 0.533
E
0.229 3.18
F
0.406 0.483
G
4.83 5.33
H
0.711 0.864
J
0.737 1.02
K 12.70
L
6.35
M
450 NOM
P
1.27
Q
900 NOM
R
2.54
-
DIM
A
-
-
INCHES
MIN MAX
0.350 0.370
0.315 0.335
0.240 0.260
0.016 0.021
0.009 0.125
0.016 0.019
0.190 0.210
0.028 0.034
0.029 0.040
0.500
0.250
450 NOM
0.050
900 NOM
0.100
All JEDEC dimensions and notes apply. '
CASE 79·02
T0-39
-Indicat•• JEDEC Registered Data.
7-14
-
2N2322 thru 2N2329
ELECTRICAL CHARACTERISTICS (T c = 25 0 C unless otherwise noted RGK = 1000 ohmsl
Characteristic
Symbol
Min
Max
IRRM
-
100
Unit
j.lA
IDRM
-
100
j.lA
-
-
1.5
2.0
-
200
350'
-
0.8
1.0
0.1
-
-
2.0
3.0
0.15
-
·Peak Reverse Blocking Current
(Rated VRRM, TJ = 1250 CI
·Peak Forward Blocking Current
(Rated VORM, TJ = 1250 CI
Peal' On·State Voltage
(lTM = 1.0 A Peakl
(lTM = 3.14 A Peak, TC = 85 0 CI"
Gate Trigger Current (Note 11
(VD = 6.0 Vdc, RL = 100 ohmsl
(V 0 = 6.0 Vdc, R L = 100 ohms, T C = -650 CI
Gate Trigger Voltage
(VO = 6.0 Vdc, RL = 100 ohmsl
(VO = 6.0 Vdc, RL = 100 ohms, TC = -650 CI"
(VO = Rated VORM, RL = 100 ohm., TJ = 1250 CI"
jJ.A
IGT
Volts
VGT
Holding Current
(YO
(VO
(VO
Volts
VTM
mA
IH
= 6.0 Vdcl
= 6.0 Vdc, TC = -650 CI"
= 6.0 Vdc, TC = 1250 CI"
-Indicates JEDEC Registered Data.
Notes: 1. RGK current is not included in measurement.
2. Thyristor devices shall not be tested with a constant current
3. Thyristor devices shall not have a positive bias applied to the
source for forward or reverse blocking capability such that the
gate concurrently with a negative potential applied to the anode.
voltage applied exceeds the rated blocking voltage.
CURRENT DERATING
~
~
~
130
'"=>t-
~
w
~
t-
~
120
~ 120
w'
-'
90
'"j
'"'"=>
x"
"'"
u'
t-
15
~
80
'"
w
60
'";:'"
j
40
-'
'"
;:
--1+-
~ 100
t-
100
;3
w
~-+---+----I--+--~
~
--jaf--
110
~
t-
140
=>
w
•
FIGURE 2 - AMBIENT TEMPERATURE
FIGURE 1 - CASE TEMPERATURE
80
'"=>'"
"x
'"
...'"
10
60
0
0.4
0.6
0.8
1.0
1.2
ITIAVI. AVERAGE ON·STATE CURRENT lAMP)
1.4
","
7-15
de
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ITIAVI. AVERAGE ONSTATE CURRENT lAMP)
0.1
2N2573 thru 212579
MCR649AP·I thru ·10
SILICON CONTROLLED
RECTIFIER
25 AMPERES RMS
25-500 VOLTS
REVERSE BLOCKING TRIODE THYRISTOR
designed for industrial applications such as motor controls,
heater controls, and power supplies, wherever half·wave or de silicon
gate controlled devices are needed.
• Glass PaSsivated Junctions for Maximum Reliability
• Center Gate Geometry'for Parameter Uniformity
• High Surge Current, ITSM = 260 A, for Crowbar Service
CASE 61-03
CASE 54-06
2N2573
thru
2N2579
r--;::=
~ ~E~.~~--I-
STV''''
~IN I. GATE
2.CATHOOf
CASE. ANODE I
MAXIMUM RATINGS ITJ = 125°C unle.. otherwise noted I
•
Rating
Peak Repetitive Forward and R8VBna
Blockingyoltoge 11)
2N2573, MCR649AP·l
2N2574, MCR649AP·2'
2N2575, MCR649AP-3
2N2576, MCR649AP4
2N2577, MCR649AP·5
2N2578, MCR649AP-6
2N2579, MCR649AP·7
On-Stoto Current
Circuit Fusing
ITJ = -650 C to.+1250C, t .. 8.3 msl
Paak Surge Current
10na Cycle, 60 Hz, T J = -65° to +1250 C)
Peak Gate Power - Forward
Average Gate Power - Forward
Peak Gate Current - Forward
Peak Gate Voltoge - Forward
Ravarse
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Symbol
VORM
or
VRRM
Valua
':CMIIX
Amp
A2sec.
ITSM
260
Amp
PGM
PG(AVG)
IGM
VGFM
VGRM
TJ
Tsta
R8JC
5.0
0.5
2.0
10
5.0'
-65 to +125
-65 to +150
1.5
Watts
Watts
Amp
Volts
Q
,~.
•
ITIRMS)
12 t
1101
lUll
0:" 32
3
II
UCI
10111111
01
1.117
1181
·s
100
,:~ o.21~ o~
•
n
DISO
: ':.10
"24"
zt
1
HI
OflO
D880
ono
I
D
, . . O"D
CASE 61-03
°c
°c
°CIW
(1) VORM and VRRM for ell types can be applied on e continuous besis without Incurring
damage. Ratings applV for zero or negative gate voltage.
SEATI"G'LANE
D
U
Unit
Volts
25
50
100
200
300
400
500
25
275
MCR649AP·'
thru
MCR649AP·l0
'''':'::'.':''~J
I
'
•
• • ,2
21119
D
In
-
11010
-
OIlS
or- 0051
1111
I
':
,
,
Q
H
+
1 +
..
R
1117
•
, ,
~~
CASE 54-06
7-16
A8
I r--+--+-t
G
2N2573 thru 2N2579 / MCR649AP-1 thru -10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Peak Forward Blocking Current
(VO
IORM
= Rated VORM with gale open, T J = 125°C)
Peak Reverse Blocking Current
(VR
IGT
= 7 Vdc, RL = 10011.)
Rated VORM, RL
=
100 n, TJ
= 20 Adc)
-
0.6
5.0
-
-
40
-
0.7
0.3
-
3.5
-
1.1
1.4
mA
Volts
IH
= 7 Vdc, Gate Open)
Turn-On Time (Id + 'r)
(I GT = 50 rnA, IT = IDA, Vo =Rated VORM)
Turn-Off Time
(IT = 10 A,IR = 10 A.dv/dl = 20 V/!'s, TJ = 1250 C)
(VO = Raled Vollage VORM)
tgt
mA
-
10
-
1.0
-
-
30
-
-
30
-
!,S
Iq
dv/dl
Forward Voltage Application Rate (Exponential)
fGale Open, TJ
5.0
VTM
Holding Current
IVO
0.6
Units
mA
Volts
= 125°C)
ForWard On Voltage
(lTM
-
VGT
= 7 Vdc, RL = 10011.)
=
Max
mA
= Rated VRRM, TJ = 1250 C)
Gate Trigger Voltage (Continuous dc)
(VO
(VO
Typ
IRRM
Gate Trigger Current (Continuous de)
(VO
Min
!,s
V/!'s
= 125°C, Vo = Rated VORM)
FIGURE 1 - CURRENT DERATING
FIGURE 2 - GATE TRIGGER CHARACTERISTICS
MAXIMUM ALLOWA8LE
FO'RWARO GATE
CURRENT
IGM=2AMP
125
D
120
115
~
u
w
2.0
1.0
~
....U
I
..,.
ANGLE
105
s.....
'"
~
....
w
0.2
w
0.1
....
90
I
I
,;
-'"
.05
80
75
•
.02
70
TYPICAL
TRIGGER
POINT
MAXIMUM ALLOWABLE FORWARO ..............
GATE VOLTAGE 10 VOLTS
.0001~
65
10
15
20
25
ITIAVI. AVERAGE FORWARD CURRENT (AMPI
~
I;
0.3
7-17
ANO CURRENT WITHIN THIS AREA
I
40 mA MINIMUM
GATE CURRENT REQUIRED
J
TO TRIGGER ALL UNITS
I
(125'C - 25 mAl
I
1-65'C - 80 mAl
L_. _________ _
;3
85
r
I
IA~~ ~~I~~G~IEL~ ~I:I~~;RO!~I!~;~~~~~E
ill
a'"'"
95
5
MAXIMUM ALLOWA8LE
GATE POWER
PGM = 5 WATTS
I
=> 100
~
3.5VOLTS~
MINIMUM
GATE VOLTAGE
REQUIREO TO TRIGGER
180'-
'CONOUCTI~;;'7-
110
0
I
;
~
I~
4
5
6
7
VGT, GATE VOLTAGE IVOLTS)
10
•
2N2573 thru 2N2579/ MCR649AP-1 thru -10
FIGURE 4 - MAXIMUM ALI,OWABLE NON-RECURRENT
SURGE CURRENT
FIGURE 3 - ON-STATE CHARACTERISTICS
,
100
'1-
ill
a:
50
~
Ii;
~
20
1.17
t----- TYPICAL
'V ,P
§a: 10
a
~
'7
a 250
:il
MAXIMUM -
, 1/, I
SURGE IS PRECEDED AND
FOLLOWED BY RATED
CURRENT AND VOLTAGE.
I-
~
"'-...... r--
~ 200
w
i'-......... r----.. r-..
>
~
5.0
w
~.
z
,d
~
~
a:
/
.1
,
~
~-:11 CYCLE
2.0
1il
z
I
--,/ ---
I
;; 1.0
~ 0.5
,
;!;
.t:
0.2
I
0.0
....
~
TJ"12SoC TJ-250 C
«
"'"
~
100
10
20
40
60
CYCLES AT 60 Hz
I
:I
I
0.1
in 150
FIGURE 6 - EFFECT OF TEMPERATURE ON
TYPICAL GATE CURRENT
2.5
0.5
1.0
1.5
2.0
vr.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
20
FIGURE 5 - EFFECT OF TEMPERATURE ON
TYPICAL HOLDING CURRENT
"ill
,g
I-
20
a:
a:
.........
OF~.sTAT~ VOLT~GE = i V
I'--.I'-..
aa: 7.0
OF~-5TAT~ VOliAGE = ~ V
r----.. ..........
10
.........
w
to
.'"
........
5.0
....... .........
I-
w
I-
.......
r-..
•
r..........
:!E
2.0
-60
-40
-20
0
20
40
60
80
100
TJ. JUNCTION TEMPERATURE (OC)
120
~
c
~
........
0.8
........
>
..'"'"
I-
w
I-
........
0.5
r--
r--...
r--...
>
ill
I
0.6
......
z
«
a:
0.4
/
."
0.4
"" 0.2
-40
-20
20
40
60
80
100
TJ,JUNCTION TEMPERATURE (OC)
120
140
- 'V
0.0
.001
.002
CURVE OEFINES TEMP. RISE
OF JUNCTION ABOVE CASE
FOR SINGLE LOAD PULSE OF
DURATION I.
PEAK ALLOWABLE DISSIPATION
IN RECTIFIER FDR TIME I
EQUALS 1250C (MAX. TJ)
MINUS MEASURED CASTTEMP.•
DIVIDED BY THE TRANSIENT
THERMAL RESISTANCE.
P
_ TJ( ...x)- TC paak----
/
in
I-
0.3
-60
140
/
_I
1.0
ffi
"
lI-
«
to
~
~
III....
.« 0.8
...........
...........
0.6
120
V
~ 1.2
'"z
OFF-5TATE VOLTAGE =7 V -
100
",..
1.4
w
~
c 0.7
ffi
0
20
40
60
80
TJ. JUNCTION TEMPERATURE (OC)
1.6
1.0
., 0.9
-20
FIGURE 8 - MAXIMUM TRANSIENT THERMAL
RESISTANCE JUNCTION TO CASE
140
FIGURE 7 - EFFECT OF TEMPERATURE ON
TYPICAL GATE VOLTAGE
«
'"
-40
3.0
2.0
-60
w
..............
«
'"j. 3.0
,
.005
.01
.02
.05
t.TIME(~
7-18
0.1
"It!
0.2
,
0.5
1.0
2N2646
2N2647
PN UNIJUNCTION
TRANSISTORS
SILICON PN
UNIJUNCTION TRANSISTORS
· .. designed for use in pulse and timing circuits, sensing circuits and
thyristor trigger circuits. These devices feature:
•
Low Peak Point Current - 2.0 /1A (Max)
•
Low Emitter Reverse Current - 200 nA (Max)
•
Passivated Surface for Reliability and Uniformity
*MAXIMUM RATINGS (TA: 25"C unle" otherwise noted.1
Symbol
Value
Power Dissipation (1)
Po
300
mW
RMS Emitter Current
IE(RMS)
50
mA
Rating
Peak Pulse Emitter Current (21
Emitter Reverse Voltage
Interba.. Vollage
Operating Junction Temperature Range
Storage Temperature Range
Unit
iE
2.0
'Amp
VB2E
30
Volts
VB2Bl
35
Volts
TJ
-6510 +125
T slO
-6510 +150
°c
°c
• Indicates JEOEC Registered Data.
t 1) Derate 3.0 mW/oC increase in ambient temperature. The total power dissipation
(available power to Emitter and Base·Two) must be limited by the external circuitry.
(2) Capacitor discharge - 10 I'F or less, 30 volts or less.
STYLE I:
PIN I. EMITrER
2. BASE I
3. BASE 2
Pi n 3 Connected to Case.
INCHES
MILLIMETERS
DIM MIN MAX
MIN MAX
A 5.31 5.84 0.209 0.230
B 4.52 4.95
0.178 0.195
C 4.32 5.33 0.170 12IQ
0 0.41 0.48 0.016 0.019
G 2.54 TYP
0.100 TYP
H 0.91 1.17 0.036 0.046
J
0.71 1.22 0.028 0.048
K 12.70
0.500
M
45_u TYP
45 0 TYP
N 1.27 TYP
IJ!IilLTYP
CASE 22A·Ol
(TO· IS Except for L.ead Posi ti on)
7-19
2N2646, 2N2647
-ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Typ
MIx
0.56
0.68
-
0.75
0.82
rBB
4.7
7.0
9.1
kohms
arBB
0.1
-
0.9
%/oC
Emitter Saturation Voltage
(VB2Bl = 10 V, IE = 50 mAl (Note 2)
VEBI (sat)
-
3.5
-
Volts
Modulated Interbase Current
(VB2Bl = 10 V,IE = 50 mAl
IB2(mod)
-
15
-
mA
-
0.005
0.005
12
0.2
-
1.0
1.0
5.0
2.0
4.0
B.O
6.0
10
-
3.0
6.0
5.0
7.0
-
Characteristic
Intrinsic Standoff Ratio
(VB2B 1 = 10 V) (Note 1)
Interbase Resistance
(VB2Bl = 3.0 V, IE
Unit
-
'I
2N2646
2N2647
= 0)
Interbase Resistance Temperature Coefficient
(VB2Bl = 3.0 V, IE = 0, TA = -55"C to +125"C)
Emitter Reverse Current
IEB20
2N2646
2N2647
(VB2E = 30 V,IBI = 0)
"A
Ip
Peak Point Emitter Current
2N2646
2N2647
(VB2Bl = 25 V)
Valley Point Current
"A
mA
IV
2N2646
2N2647
(VB2Bl = 20 V, RB2 = 100 ohms) (Note 2)
Base·One Peak Pulse Voltage
(Note 3, Figure 3)
2N2646
2N2647
• Indicates JEDEC Registered Data.
Volts
VOBI
(2) Use pul ... techniques: PW '" 300 "s, duty cycle ~ 2% to avoid
internal heating due to interbase modulation which may result in
Notes:
erroneous readings.
(1) Intrinsic standoff ratio,
(3) Base-One Peak Pulse Voltage is measured in circuit of Figure 3.
This specification is used to ensure minimum pulse amplitude for
applications in SeR, firing circuits and other types of pulse circuits.
11. is defined by equation:
Vp - VF
'1=---
•
VB2Bl
Where Vp
= Peak Point
VB2Bl
Emitter Voltage
= Interbase Voltage
VF = Emitter to Base-One Junction Diode Drop
(.. 0.45 V@ 10 "A)
FIGURE2
FIGURE 1
UNIJUNCTION TRANSISTOR SYMBOL
AND NOMENCLATURE
-
STATIC EMITTER CHARACTERISTIC
CURVES
FIGURE 3 - VOBI TEST CIRCUIT
(Typical Relaxation Oscillator I
(Exaggerated to Show Details)
Ve
IB2
Cutoff
Region
Negative
Resistance...,.. Saturation
Region
I
Region
+20 V
Ie
-f]l---
veB1( •• ,)
Vv
I
VOB1
t
-
-f-+~----~---~.
Iv
leo
7-20
Ie
2N3668 thru 2N3670
2N4103
G
A
o-....~..)---
r---
>
.......
'"
~
...... r--.....
'"iii
~
-..........
0
H-J
I
OFF-STATE VOLTAGE -12V
.:----..
o. B
.:----..
o. 7 t---- r------
- -I - - f--- 1---
.........
o. 5 t------
--t---
I.........
o.6t--- t---- 1--- - - - -~
~
r-..
"
~O. 4
>
2. 0
-60
O. 3
-40
-20
20
40
60
BO
TJ, JUNCTION TEMPERATURE IOC)
100
120
140
-60
-40
-20
20
40
60
80
100
TJ, JUNCTION TEMPERATURE IOC)
120
140
•
7-23
2N3870 thru 2N3813
2N3896 thru 2N3899
2N6171 thru 2N6174
SILICON
CONTROLLED
RECTIFIERS
Ao
REVERSE BLOCKING TRIODE THYRISTORS
35 AMPERES RMS
100-800 VOLTS
· .. designed for industrial and consumer applications such as power
supplies; battery chargers; temperature, motor, light and welder
controls.
CASE 311·01
(Stud Isolated I
• Economical for a Wide Range of Uses
• High Surge Current - ITSM = 350 Amp
~
• Practical Level Triggering and Holding Characteristics 4.0 and 5.2 mA (Typ) @ TC = 25 0 C
• Rugged Construction in Either Pressfit, Stud or Isolated
Stud Package
MAXIMUM RATI NGS
IT c
2N6171
thru
2N6174
'" 1oooe unless otherWise noted}
• Symbol
Rating
Value
Volts
"Peak Repetitive Forward or Reverse
Blocking Voltage 11'
IT J '" -40 to +1000C. 1/2 Sine Wave, 50 to
Unit
2N3896.
2N3B97.
2N3B9B.
2N3B99.
~
.
""t;i2N3873
il
,,
CASE 175.Q2
2N3896
thru
2N3899
CASE 174·03
TO-203
, 2N3870
thru
2N3873
STYLE J.
VORM
TERM 1 GATE
2. CATHODE
3 ANODE
400 Hz. Gate Open)
2N3B70.
2N3B71.
2N3B72.
2N3B73.
CASE 174-03
TO_203 '
2N3870
thru
100
200
2N6171
2N6172
2N6173
2N6174
400
600
Volts
·Peak Non-Repetitive
Forward Dr Reverse Blockmg Voltage
It
oS.
5.0 msl
2N3B70.
2N3B71.
2N3B72.
2N3B73.
•
2N3B96.
2N3B97.
2N389B.
2N3B99.
150
330
660
700
2N6171
2N6172
2N6173
2N6174
.. Average On-State Current 121
ITC == -40 to +6So C)
(TC'" +8SoCI
Amp
'nAV)
22
11
·Peak Non·Repetltlve Surge Current
lOne cycle. 60 Hz) IT C '" +6So CI
Circuit FUSing
fTC = -40 to +100oCl
It = 1.0 to 8.3 msl
·Peak Gate Poyver
350
Amp
510
ALs
20
Watts
• Average Gate Power
0.5
Watt
"Peak Forward Gate Current
2.0
Amp
10
Volts
·Operating Junction Temperature
Range .
-40 to +100
°c
·Storage Temperature Range
-40 to +150
°c
30
In lb.
Peak Gate Voltage
Stud Torque
·THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction ·to Case
2N3870 thru 2N3873. 2N3896 thru 2N3899
2N6171 thru 2N6174
Symbol
M ••
Unit
°C/W
0.9
1.0
-Indlcatn JEDEC Registered Data.
01 Ratings apply for zero or negative gate voltage. DeVIces shall not have III positive bIas
applied to the gate concurrently with a negative potentIal on the anode. Oh'It:es should
not be telted with a constant current source for forward or reverse blocking capabilitv
such that the voltage applied exc_d_ the rated blocking voltage.
(2) Iiolated stud davices must be de~ated an additional 10 percent.
7-24
2N3896
thru
2N3899
l~r
CASE 175·02
STYlE 1
'
TERM 1 CATHODE
2 GATE
STUD ANODE
2N3870 thru 2N3873, 2N3896 thru 2N3899, 2N6171 thru 2N6174
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
.. Peak Forward Blocking Current
(VO
= Rated VORM, with gate open, TC = 1000 CI
2N3B70,
2N3871,
2N3872,
2N3873,
2N3B96,
2N3897,
2N3898,
2N3899,
Min
Typ
Max
Unit
mA
IORM
-
2N6171
2N6172
2N6173
2N6174
-
.. Peak Reverse Blocking Current
1.0
1.0
1.0
1.0
2.0
2.5
3.0
4.0
mA
IRRM
(VR = Rated VRRM,with gate open, TC = 1000 CI
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
-
1.0
1.0
1.0
1.0
2.0
2.5
3.0
4.0
1.5
1.85
Volts
-
9.0
4.0
80
40
mA
-
0.9
0.69
3.0
1.6
IH
-
14
5.2
90
50
mA
tgt
-
-
1.5
1'5
-
-
25
35
-
-
50
-
-
"Peak On-State Voltage
(lTM = 69 A Peakl
VTM
"Gate Trigger Current, Continuous de
(Vo = 12 V, RL = 24 ohmsl
'TC = -40°C
TC = 25°C
IGT
"Gate Trigger Voltage Continuous de
-
Volts
VGT
'TC = -40°C
TC = 25°C
(VD = 12 V, RL = 24 ohmsl
'TC = _40°C
TC = 25°C
"Holding Current (Gate Open)
(VO = 12 V, ITM = 200 mAl
"Gate Controlled Turn-On Time (td + trl
(lTM =41 Ade, Vo = rated VORM,
IGT = 40 mAde, Rise Time"" 0.051'5, Pulse Width = 101'51
Circuit Commutated Turn-Off Time
(lTM = lOA,lR = 10AI
(lTM = 10 A,IR = 10 A, TC = 1000 CI
tq
Forward Voltage Application Rate
dv/dt
1'5
V/"s
(TC = 100°C, Vo = Rated VORMI
·1 ndicates JEDEC Registered Data.
FIGURE 1 - AVER'AGE CURRENT DERATING
10
0,,0
0
Types 2N6171 thru 2NG174 must be derated
an additional 10%. For example, in FIgure 1,
the max TC at 20 A (180 0 Conduction) IS JOoe.,
~~
a derating of 30oe. These types must be
~ ~ derated JJoC. therefore, the allowable TC (maxi
'\ ~~ ~670C.
I
I
a" 300 _
1'\ ~"
.!1l
60 0 _
'\ "-..
-jal-
1,\ 1"-..":
.-120·
io50
o
•
FIGURE 2 - ON·STATE POWER DISSIPATION
5.0
10
15
CONOUCTION ANGLE
'
'-'
=
OFF-STATE VOLTAGE· 12 V.
. RL=24n-
i
I' i\
Ii Ilil
25°C
5.0
r-
!-' 3.0
:.....
,+,'
1.0
1-+-
1
2.0
5.0
'"'"
~
I"'
'"
I--
..
i-H,
IDO'C
I.0
0.5
ffi
-
!
IIII
I
IIII
I
10
20
OFF~TATE)VOLT~GE = IJ V
RL=24n-
~ 10
1:;
r,..,...
~ 2.0
0.2
!...
TJ = -40'C
.....-
"' 10
~ 7.0
,--
z
.......... io....
I\,
I-
~
FIGURE 7 - GATE TRIGGER CURRENT
2.0
I'...
7.0
.......
..........
5.0
............
-............
,t; 3.0
.......
--50
100
2.0
-60
200
-40
-20
PULSE WIDTH 1m,)
~
OFF1TATE
~ 0.8
..............
'"
~
o
>
ffi
O.S
..........
'"
...'"a;
~
lOLTA~E.
ILRL=24n
80
OFIF-STATIE
100
120
140
.........
..........
~
r-....
~
§
..........
I--....
5.0
r--......
o
'":E
0.4
'"!-'
VOL~AGE .112 V
RL = 24 n
~
~
B 7.0
..........
60
20
;:: 10
.....
40
FIGURE 9 - HOLDING CURRENT
FIGURE 8 - GATE TRIGGER VOLTAGE
1.0
~
o
20
TJ. JUNCTION TEMPERATURE 1°C)
3_0
~
0.2
-60
-40
-20
20
40
60
80
100
120
2.0
-60
140
TJ. JUNCTION TEMPERATURE 1°C)
-40
-20
20
40
60
80
TJ. JUNCTION TEMPERATURE 1°C)
7-27
100
120
140
•
2N3980
SILICON ANNULARt PN UNIJUNCTION TRANSISTOR
· .. designed for military and industrial use in pulse, timing, sensing,
and oscillator circuits. These devices feature:
o
•
o
•
Low Peak Point Current - 2.0 IJA ma!<
Fast Switching - to 1.0 MHz '
Low Emitter Reverse Current - 10 nA max
Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS IT A
~ 250 C unless otherwise noted)
Symbol
Rating
Unit
Po
360
mW
RMS Emitter Current
Ie
50
mA
Peak Pulse Emitter Current (2)
ie
1.0
Amp
Characteristic
RMS Power Dissipation (1)
Emitter Reverse Voltage
Interbase Voltage
VB2E
30
Volts
VB2Bl
35
Volts
Tsto
-65 to +200
°c
Storage"Temperature Range
(1)
II'
(2)
PN UNIJUNCTICN
TRANSISTOR
Derate 2.4 mW/oC increase in ambient tem~erature. Total power dissipation (available
power to Emitter and Base-Two) must. be limited by external circuitry.
Capacitance discharge current must fall to 0.37 Amp 'within 3.0 ms and PRR < 10 PPS.
;
STYLE 1
PIN 1. EMITTER
2. BASE 1
3. BASE 2 CONNECTED TO CASE
INCHES
MILLIMETERS
MIN MAX
MIN MAX
A 5.31
5.84 0.209 0.230
8 4.52 4.95 0.178 0.195
C 4.32 5.33 0.170 0.210
0 0.41
0.48 0.016 0.019
G 2.54 TYP
H 0.91
1.17
0.046
J
0.71
1.22
0.048
K 12.70
M 450 TYP
P
N
1.27TYP
0.050 TYP
..
TO-1S except for lead posltlDn
DIM
tAnnular Semiconductors Patented by Motorola Inc.
~.
i
CASE 22A.(JI
(TO-IS Type)
7-28
2N3980
E\.ECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Intrinsic Standoff Ratio
(VB2Bl = 10 V) Note 1
Interbsse Resistance
Typ
Max
0.6B
-
0.B2
4.0
6.0
B.O
0.4
-
0.9
-
2.5
3.0
12
15
-
-
5.0
Unit
k ohms
RBB
(VB2Bl = 3.0 V, IE = 0)
Interbase Resistance Temperature Coefficient
(VB2Bl = 3.0 V, IE = 0, TA = -6SoC to +1000 C);
%/oC
QRBB
Emitter Saturation Voltage
(VB281 = 10 V, IE = 50 mAl Note 2
VEB1(sot!
Modulated Interbase Current
(VB2Bl = 10 V, IE = 50 mAl
IB2(mod)
Emitter Reverse Current
(VB2E
(VB2E
Min
'1/
Volts
mA
IEB20
=30 V, IBI
= 0)
= 30 V, IBI = 0, TA = 12SoC)
Peak Point Emitter Current
-
-
10
1.0
-
0.6
2.0
1.0
4.0
10
6.0
B.O
-
1.0
1.25
-
nA
J!.A
J!.A
Ip
(VB2Bl = 25V)
Vallev Point Current
mA
IV
(VB2Bl = 20 V, RB2 = 100 ohms) Note 2
Base-One Peak Pulse Voltage
Volts
VOBI
(Noto 3, Figure 3)
I(max)
Maximum Oscillation Frequency
MHz
(Figur.4)
NOTES
1. Intrinsic standoff ratio,
7]. is defined by equation:
2. Use pulse techniques: PW
VB2Bl = Intorbase Voltage
=: Emitter to Base-Qne Junction
(0.45V,@ 10 J!.A)
FIGURE 1 - UNIJUNCTION
TRANSISTOR
SYMBOL AND
NOMENCLATURE
Diode Drop
FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES
FIGURE 3 - VOB1
TEST CIRCUIT
(Exaggerated to Show Details)
(Typical Relaxation Oscillator)
VE NEGATIVE
CUTOFF ' RESISTANCE
REGION
fJ.S
duty cycle
~2%
to avoid
Vp
IE
E
I " PEAK
:
I
POINT _ I
:
:
I
+20 V
+20 V
:
:
FIGUfiE 4 - f(max) MAXIMUM
FREQUENCY TEST CIRCUIT
SATURATION
f-REGION-I- REGION
I
RB2
lOOn
RB2
100 n
EMITTER TO
BASE-l
I
VB2Bl
I
I
VEBI
I
-+---t-----::::..-~~-
(sat)
VE
300
3. Base-One Peak Pulse Voltage is measured in circuit of Figure 3.
This specification is used to ensure minimum pulse amplitude for
applications in ACR firing circuits and other types of pulse circuits.
Where Vp = Peak Point Emitter Voltage
V(EB1)
~
internal heating due to interbase modulation which may result in
erroneous readings.
=,Vp - V(EB1)
'1/
VB2Bl
Vv
I
-+-f.l------:'I--.....I.-IE
Ip
IV
lEO
7-29
CI
0.21'F
RBI
20 n
RBI
20n'
TO
FREQUENCY
COUNTER
•
2N4167thru 2N4174
2N4183thru 2N4190
[
SILICON CONTROLLED
RECTIFIERS
REVERSE BLOCKING TRIODE THYRISTOR
8-AMPERE RMS
· .. multi·purpose PNPN silicon controlled rectifiers suited for indus·
trial, consumer, and mulitary applications. Offered in a choice of
space·saving, economi"Ca1 packages for mounting versatility.
25 thru 600 VOLTS
• Uniform Low·Level Noise·1 mmune Gate Triggering IGT = 10 mA (Typ) @TC = 250 C
• Low Forward "On" Voltage VT = 1.0 V (Typ) @ 5.0 Amp
@
'
Fi
250 C
• High Surge·Current Capability ITSM ~ 100 Amp Peak
• Shorted Emitter Construction
t-= l
(Apply over operating temperature range and for all case types unless otherwise notedl
·Peak Repetitive Forward and Reverse Blocking
2N4167.83.
VORM
50
VRRM
100
2N4170.86.
200
2N4171.87.
300
2N4172.88.
400
2N4173.89.
500
2N4174.90.
600
Forward Current RMS
lOne cycle. 60 Hz. T J
= -40 to
DIM
A
C
F
G
J
•
.. Peak Gate Power
.. Average Gate Power
·Peak Gate Current
Peak Gate Voltage 121
·Operating Temperature Range
·Storage Temperature Range
MILLIMETERS
MIN MAX
- 1110
787
178TYP
219
279
1012 1148
16.16
- 1549
8.0
Amp
ITSM
100
Amp
12,
40
PGM
5.0
Watt
PGIAVI
0.5
Watt
IGM
2.0
Amp
VGM
10
Volts
TJ
-40 to +100
°c
Tst9
-40 to +150
°c
15
in.lb:
Symbol
Typ
Ma.
Unit
Thermal ReSl'ilance. Junction to Case
ROJC
1.5
2.5"
°CIW
Thermal ReSistance, Case to Ambient
ISee FIg. III 2N4183·98
ROCA
°C/W
50
-
NOTES
101M "G" MEASURED AT CAN.
2 LEAD NO 3 t7.50OlSPLACEMEHT.
1
STYLE I'
PIN 1 GATE
2. CATHODE
3 ANODE
DIM
A
C
0
F
G
•
L
(1) Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
(2) Devices should not be operated with a pOSitive bias applied to the gate concurrently
with 8 negative potential applied to the anode.
,
-Indicates JEDEC Registered Data
7-30
-
2N4167-74
CASE 86'()1
A 2s
THERMAL CHARACTERISTICS
Characteristic
INCHES
MIN MAX
0437
0310
0010TYP
0090 0.110
0422 0452
0660
- 0610
L
NOTE.
I [!1M "G" MEASURED AT CAN,
ITIRMSI
Stud Torque
r
SEAliNG PLANE
~== . . 'O·J2UNF·2A
+1000 CI
Circuit FUSing
ITJ = -40 to +1000 C; t""8.3 msl
~
....
STYLE I
PIN 1. GATE
2. CATHODE
STUD ANODE
25
2N4169.85.
·Peak Forward Surge Current
L
Unit
Volts
or
2N4168.84.
•
Value
Symbol
Rating
Voltage (1)
!
o
MAXIMUM RATINGS
P
•
MILLIMETERS
MIN MAX
...
-
109'
591
'16
J
2.29
'86
5l
279
3353
3150TYP
INCHI:S
MIN MAX
-
~1!
DO"
DO
0'"
0.110
1320
12
DO;
7
10' '91 .13
'OJ '58
'08 "01 D.
- 1.~_~
457
3048
2N4183-90
CASE 87L"()1
2N4167 thru 2N4174/2N4183 thru 2N4190
ELECTRICAL CHARACTERISTICS (TC ~ 250 C unless otherwise nOled)
Symbol
Characteristic
·Peak Forward Blocking Current
Min
Typ
Max
-
-
2.0
-
-
2.0
-
10
30
-
-
60
(VO = Rated VORM@TJ=.1000 C,gateopen)
-Peak Reverse Blocking Current
rnA
mA
IRRM
(VR = Rated VRRM@TJ= 1000 C, gate open)
Gate Trigger Current (Continuous dc) (1)
(VO 7.0 Vdc, RL = 100 n)
·(VO = 7.0 Vdc, RL = 100 n, TC = -400 C)
IGT
Gate Trigger Voltage IContinuous de)
VGT
=
mA
Volts
-
(VO = 7.0 Vac, RL = 100 n)
·(VO = 7.0 Vdc, RL 100 n, TC = -400 C)
·(VO = 7.0 Vdc, RL = 100 n, TJ = 1000 C)
=
-Forward "On" Voltage (pulsed. 1.0 ms max. duty
(lTM = 15.7 A)
Unit
IORM
cycle~'%)
-
IH
-
2.5
-
-
-
1.4
2.0
-
10
30
-
-
60
-
1.0
-
-
15
-
25
-
-
50
-
mA
NO = 7.0 Vdc, gate open)
·(VO = 7.0 Vdc, gate open, TC = _40 0 C)
Turn-On Time ltd + t,)
0.2
Volts
VTM
Holding Current
1.5
0.75
'on
"s
(lG = 20 mAde, IF = 5.0 Ade, Vo = Rated VORM)
Turn-Off Time
(IF = 5.0 Adc. IR = 5.0 Adc)
'off
(IF = 5.0 Adc,IR = 5.0 Adc, TJ =
(dv/dl
1000 C,
"s
Vo = Rated VORM)
= 30 V/"s)
Forward Voltage Application Rate (Exponential)
(Gate open, TJ = 1000 C, Vo = Rated VORM)
dv/dt
V/"s
(1) For optimum operation, i,e, faster turn-on, lower sWitching losses, best di/dt capability. recommended IGT '" 200 rnA minimum .
• Indicates JEOEC Registered Data
"
•
TYPICAL TRIGGER CHARACTERISTICS
FIGURE 2 - CAPACITIVE DISCHARGE
TRIGGERING
FIGURE I - PULSE CURRENT
TRIGGERING
50
150
Vo = 7.0 Vdc
I"
100
;;:
70
"-
....
~
....w
20
~
10
~
0
5.0
co
"",-
'"
"co..:
!E 10
7.0
5.0
0.05
20
~
w
l~";=
0
.§ 50
30
~
TJ =25 0C
Vo = 7.0 Vdc
I\-
-
r-....
>
TJ = -550C
"'-....
I-= CT
0
'"
....
r-- ~C'
U 2.0
............
;t
~
~ 1.0
100°C
0.1
0.2
0.5
1.0
2.0
5.0
10
20
0.5
200
50
500
1000 2000
t-I-o-----PF
'w.AVERAGETRIGGER PULSE WIDTH (,.,)
7-31
5000 10.01
••
":'-
---
0.02
cr. TRIGGER CAPACITANCE
0.05
0.1
0.2
"r---~·I
2N4167 thru 2N4174/2N4183 thru 2N4190
CURRENT DERATING
FIGURE 4 - MAXIMUM AMBIENT
TEMPERATURE
FIGURE 3 - MAXIMUM CASE TEMPERATURE
100
90
~
w
0:
=
!c
0:
......
....
..'"...
~
aD
70
60
w
z 50
;;;
<
....
40
30
20
0
ITlAV),AVERAGE FORWARD CURRENT (AMP)
IT(AV),AVERAGE FORWARO CURRENT (AMP)
FIGURE 5 - POWER DISSIPATION
FIGURE 6 - MAXIMUM SURGE CAPABILITY
O!~r-...
0:
~
0
~
r"-
S~~I~~ETROA~~~~~
0-
~S
~~6.0~--~----~__"f-~~~+---
........
0
~z
1 :--..
"'0
~~4.01-----r--11~~~~-+----+---
0
>
0
~~
.0
OEVICE IN FREE STILL AIR
$
~
•
3.0
2.0
M~X
w
u
z
;:
1.0
TYP
Q.5
ffi
..........-:: V
~
f-"'"
~ 0.2
~ o. 1
~
....
-,;0.05
U
~~
......
;;:0.03
N
0.02
0.05
0.1
0.2
0.5
1.0,
1"'-, .......
20
30
50
II 100
I
NUMBER OF CYCLES
FIGURE 7 - THERMAL RESPONSE
ffi
10
5.0
ITlAV),AVERAGE FORWARO CURRENT (AMP)
~
....
"'- .....
r--:DEVICE tOUNTEO ON
I I IHEAT SINK
2.0
~-
J
I
RATEO LOAD CONDITIONS
TJ =-40°C to +IOOoC
PULSE REPETITION
...........~QUENCY =60 Hz
r-....
2.0
5.0
t, TIME (m.)
7-32
10
20
50
100
-
1-;--
200
--
500
1000
2000
2N4167 thru 2N4174/2N4183 thru 2N4190
FIGURE 8 - FORWARD VOLTAGE
Ii: 100
~
10
ffi
50
TYP
MAX-
~ 3D
B
w
10
~
7.0
c
I
20
z~
'/
::;
o
0.4
~
a:
a
'"z
§
I
'"~
O.B
-- - --
~
I-
1.0
0.3
1.2
1.6
2.0
2.4
2.8
3.2
3.6
-40
4.0
-20
20
vr,lNSTANTANEOUS ON·STATE VOLTAGE (VOLTS)
Rl
'"~
200
w
'"~
g
~
;:;
FIGURE 11 - CASE-TO-AMBIENT THERMAL RESISTANCE
Units mounted In center _
of square sheet of l/B'lOch
thick bright copper. Heat sinks _
hetdvertically Instill Blr.
(Heatsmkareaistwice-
"'\.
"
\\
area of one side)
~
"I",
20
10
1.0
../:... L = 314"
l. = 114"
~
50
~
'"
+-
'\
2.0
TYPICAL TERMINAL
STRIP OR PRINTED
CIRCUIT BOARD MOUNTING
(CASE B7L)
L = LEAD LENGTH -
~
z
in
5.0
100
BO
60
"I'
100
60
40
TJ, JUNCTION TEMPERATURE (DC)
FIGURE 10 - TYPICAL THERMAL RESISTANCE OF PLATES
400
- -
0.7
<:> 0.5
fAl
~ 1.0
VD = 7.0 Vdc
I-
//
2.0
I I I
2.0
;S
Tp250 C
Tp 100 0 C
~ 3.0
z
ffi
N
<
./
ffi 5.0
::
..&"
/ ~i j '
z
~
FIGURE 9 - HOLDING CURRENT
3.0
10
10
15
o
100
-.....;;:::: ~
.200
300
AIR FLOW,lINEAR FTIMIN
ROSA, THERMAL RESISTANCE (OCM)
7-33
400
500
2N4199
thru
2N4204
Designers Data Sheet
,
REVERSE BLOCKING TRIODE THYRISTOR
SILICON·
CONTROLLED
RECTIFIERS
fast switching, high-voltage Thyristors especially designed for
pulse modulator applications in radar and other similar equipment_
100 AMPERE PULSE
300 thru 800 VOLTS
• Guaranteed Limits on All Critical Parameters
• High-Voltage: VDRM = 300 to 800 Volts
Designers Data for
"Worst Case" Conditions
• Maximum Turn-On Times Specified - 300 to 400 ns
•
Thll Designers" Data Sheets permit the design of most circuits
entirely from the information presented. Limit curves -: representing
boundaries on device characteristics
- are given to facilitate "worst
case" design.
Repetitive Pulse Current to 100 Amperes
• Stable Switching Characteristics Over an Operating
Temperature Range From -65 to +1050 C
• Pulse Repetition RateS as High as 20,000 pps
• Jan Versions Available
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Reverse Blocking Voltage (11 (TJ - 1050 CI
VRRM
50
Volts
'Peak Forward Blocking Voltage (11 2N4199
(TC = 105°C)
2N4200
2N4201
2N4202
2N4203
2N4204
VDRM
300
400
500
600
700
800
Volts
Repetitive Peak OnaState Current
(PW = 3:0 1'5, Duty Cycle = 0_6%, T C = 85°C)
ITf:\M
100
Amp
Continuous On-State Current (TC - 65°C)
Current Application Rate (2)
IT
di/dt
5.0
Amp
5000
AIl's
Rating
•
PGFM
20
Watts
PGF(AV)
1
Watt
Peak Forward Gate Current
IGFM
5.0
Amp
Peak Gate Voltage - Forward
Reverse (3)
VGFM
VGRM
10
10
Volts
Peak forward Gate Power
Average Forward Gate Power
Operating Junction Temperature Range
Blocking State
Conducting State
Storage Temperature Range
STYLE 1.
PIN I. CATHODE
2. GATE
STUD -ANODE
°c
TJ
-65 to +105
-65 to +200
T stg
-65 to +200
Stud Torque
°c
in_lb.
15
THERMAL CHARACTER.ISTICS
Characteristic
"Thermal Resistance. Junction to Case
I
Symbol
I
Max
R8JC
I
3.0
I
Unit
°C/W
(11 Characterized for unilateral applications where reverse blocking capability is not important.
Higher voltage units available upon request. VORM and VRRM may be applied as a
continuous dc voltage for, zero or negative gate voltage but positive gate voltage must not
be applied concurrently with a negative potential on the anode. When checking blocking
capability. do not permit the applied voltage to exceed the rated voltage.
(2) Minimum Gate Trigger Pulse: iG = 200 rnA. PW c 1 #AS. tr :::: 20 ns.
(3) Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes.
.Trademark of Motorola Inc.
*JEOEC Registered Data
7-34
MILLIMETERS
MIN MAX
A 12.57" 12.83
B 10.77 11.10
10.80
C
D 3.94
4.10
3.56
E
J 10.16 11.51
K
1.12
L
11.18
N
1.11
Q
1.02
1.91
DIM
-
INCHES
MIN MAX
0.495 0.505
0.424 0.431
0.425
0.155 0.185
0.140
0.400 0.453
I U••••
0.100
0.280
0.040 0.015
CASE 63-03
-
-
2N41~9
thru 2N4204
ELECTRICAL CHARACTERISTICS ITC = 2SoC unless otherwise noted)
Fig. No.
Symbol
Min
Max
Unit
·Peak Forward and Rewrse Blocking Current
IRated VORM and VRRM. TC = IOSoC. gate open)
Gate Trigger Current IContinuous de)
(Anode Voltage = 7.0 Vde. RL = 100 ohms. TC = 25o C)
" (Anode Voltage = 7.0 Vde. RL = 100 ohms. TC = ..oSoC)
Gate Trigger Voltage (Continuous de)
IAnode VoItal!" = rated VORM. RL = 100 ohms. TC = 10So C)
IAnode Voltage = 7.0 Vde. RL = 100 ohms. TC = 2So C)
" (Anode Voltage = 7.0 Vdc. RL = 100 ohms. TC = ..oSOC)
17
IORM
IRRM
-
2.0
2.0
mA
14
IGT
-
-
50
100
0.2
-
-
I.S
2.0
-Hording Current
18
3.0
-
CharllCteri$tic
.
12
VGT
-
-Forward "On'" Voltage
UTM = S Adc. PW = 1.0 m. max. Outy cycle" 1%)
-Dynamic Forward "On" Voltage
(0.5 ,.. after 50% decay point on dynamic forward voltage waveform.)
8
VTM
7
vTM
Forward-Current: 30 A pulse
Volts
mA
IH
(Anode Voltage = 7.0 Vdc. gate open. T C = 10So C)
Gate Pulse: at 200 rnA. PW = 1.0,... tr = 20 ns
"Turn.()n Time (2) ITM = 30A
Delay Time
Rise Time
rnA
Volts
Volts
-
2S
-
200
-
200
ISO
130
100
-
20
2S0
-
ns
All types
2N4199 and 2N4200
2N4201
2N4202
2N4203 and 2N4204
·Pulse Tum.Qff Time
Test Conditions: PFN discharge; Forward Current = 30 A pulse;
Reverse Current = S.O A. TC = 8So C.dv/dt = 250 VII'S to Rated VORM;
Reverse anode voltage during turn-off interval:; 0 V;
Reverse gate bias during turn~ff interval -= 6.0 V.
-Forward Voltage Application Rate (Linear Rise of Voltage)
ITC = 10SCC. gate open. Vo = Rated VORM)
1.9
1.11
td
tr
2.13
tq
16
I'S
dv/dt
VII'S
·VORM for all types can be applied on a continuous de basis without incurring damage. Ratings apply for zero or negative gate voltage. When
checking forward or reverse blocking capability. these devices should not be tested with a constant current source in a manner that the voltage
applied exceeds the rated blocking voltage. Other voltage units available upon request.
TEST CIRCUITS
FIGURE 1 - TURN'()N TIME
FIGURE 2 - TURN'()FF TIME
200 H (+)
PFN. Zo = 2.0 n
RE-APPLIED
FORWARD VOLTAGE.
dv/dt = 250 VII's
'0:'0":":\
I'
RS·,·on
·Two lN4937 fast-recovery diodes in series
each shunted by a 180 kn resistor.
7-35
RC· 2.on
2N4199 thru 2N4204
FIGURE 3 - MAXIMUM ALLOWABLE FORWARD PULSE CURRENT
Q:' 200
~
""
§ 100
a:
=>
....
w
~
co
L-:~
0
/'
_
~
0
'"
0
"
""
:;:
.t:'
5.0
1.0
n, . 2.0
-
500 AI", MAX
"
:::---':c = 25 0C t-
~
I I
/
a:
~
~
~
pea~
.::::::::::::
~ p.. ...
junction "mp.",ure 01 200 0C. Junction temperature
must be no higher than 1050 C prior to application of forward blocking voltage.
0.1.. i! based up'on •
I II
4.0
10 n,
20
40
100
I
n,
I 'I I I
200
400
I I IJ
I
1.0",
2.0
-I
4.0
40
100",
200
1 m,
400
'. TIME OR PULSE WIDTH
FIGURE 5 - DERATING USING TYPICAL SWITCHING LOSSES
FIGURE 4 - DERATING USING NO SWITCHING LOSSES
~
'"5
100 "
"'-
I-
~
70
G
1\
w
~
ir
co
a:
~
:;:
~
"-
Data is based on
maXi~
........
""-
steady-state forward drop dat
(Figure 8) at TJ = 20DD and
e
data of Figure 6. Turn-on power
'r-..
transients are neglected. The curves
"'"
or===-VA'
IIH
'1-
1=100Hz
.- 500 Hz
~ I:::,...
i'
I'.
0
TJ·200 0C
TC = 85 0C
I" f::::!::: ~N.
2.OkHz
i'1'
I'.
~1'
"f(r--
I'
0
70
!
0.5 I"
~~~-"t- 101"
~ ~~
O'SI"J /
jS'OI'-'J /
10 p.'
100
200·C8S·C-
Lll
--
201"
-=--...
""...
~
V
~....
!J tYPiC:~ ~./
PFN circuits. Actual circuits should be
0 checked as indicated in the design note.
100
200
500
1k
2k
PW. PU LSE WIDTH (",I
TJ
Tc
[s.Op.'
Data i, indicative of capaJJ
N l' I"N
50
PW
VA.~800V
0
10 kHz i"o!:'O kHz
30
300 V
0j!!!_~ F=
/1/1.0kHz
I~OkH:--'
indicate maximum capability that
can be approached using delay rea ctDr
,. 20 circuits.
.J::1.0
2.0
3.0
5.0 7.0 10
20
'x"
•
0
~
'" f'
i'. I'..
I,"
I'..
5k
10k
20k
I. PULSE REPETITION RATE (HzI
DESIGN NOTE
Use of Transient Thermal Resistance Data
A. train of periodical power pulses can be represented
, by the model shown in' Fig. A.. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Fig. 6 was calculated for various
duty cycles from:
r(tl = 0 + (1 - 01 0 rItA. + tpl + r(tA.1 - r(tpl
To find OJc(tl multiply the value obtained from Fig. 6
by the steady-state value 0 JC .(001. Use 30 CIW for worstcase results; use 20 CIW for typical information.
DESIGN EXA.MPLE
A. 2N4199 discharging a PFN, transient power pulse
shown in Fig. C.
Conditions: VA.K = 150 V., IPK =44 A.., f = 5000 Hz.
Determine: .a.T
Method 1: (See Fig.A.1 PA.tA.ischosentohavethesame
energy as the actual power pulse, i.e.: the area under the
curves are equal. PA. equals the peak of the actual power
·pulse. A.t a pulse repetition frequency of 5000 Hz and
T A. = 2.14 JlS (0 = 0.01071; the reading on Fig. 6 is 0.039.
:'. .a. T =r(tl ROJC (001 P;t.. = (0.0391 (3) (10001 = 1200 C.
Method 2: For a, power waveform where the time of
the peak power is short compared to the total transient,
the foregoing method results in an overly' large safety
factor. A. pulse model closer to the real case is shown in
Fig. B. Using the transient thermal resistance information
for D = 0 in Fig. 6, .a. T(t41 and .a. T (t51 can be evaluated
from
.a. T(t41 = [Pl [r(T1) + (.1 ~ D11 0 r(T + Tll + 0 - r(TIl
+P2[(1-D210r(TI+D2-r(T-T21J] ROJC
~
0.03
0.05
-
~~
2 _
0.0
:;..,:::
..... ~
o
1--"""
i
°ITY CYi LE
STEADY STATE VALUES F
OJC(~) - 30 C,w MAX
OJC(~) = 2oC,w TYP
I-
F
~
~0.005
......... [,,01
~\iOl °1=OISINIGLEtULSE)
~ 0.0 1~
0.1 .'
----
O~r-
.,.
...-
I--
0.2
1.0.,
0.4
2.0
4.0
10.,
20
40
100.,
200
1.0 ms
400
2.0
10 ms
4.0
40
20
100 ms
I, TIME DR PULSE WIDTH
FORWARD "ON"VOLTAGE DATA
FIGURE 7 - TYPICAL OYNAMIC FORWARD."ON" VOLTAGE
a:-
~
-
~
_
! r-l~~~II
100 i
90'HIIJ
I i':::I. I !f'
II
~ SO
~
~
50
-
401 1!
;
I
i , Iiit,---
I I
I,
I!
IH
IU
J
.,
':11
o
I
/
I
/
if"
I. V
0
Q
I
II
II
//
(Time reference -
100
I
fI
/I
;.~ :~J I II / t
¢Yi
~;g-~'f!;g
II!, '-7fw/J~-:g
1,1
R·C DISCHARGE
~-IG=200mA
1 ~
~ I~
Tc=25°C
~"'-"'1 1
;"'-'"', "'- rv -V~'~800V-i
19~
Q
BO~"'-H5':
70
Wi
FIGURE 8 - MAXIMUM STEADY-STATE
-·.-VA,~600~_
1050 C_
II ---VA,~400V
IL --VA,~400V- ,,?ti?_
I
I
II
/1/
f
/
IIj
10
700
o
o
800
,
I
N.!
.JJ
'II
'1'/
v,
0
"
/ /
10% point of peak ~nade current. Value at spe~Jfled tIme after reference point)
200
300
400
500
600
'T, TRANSIENT FORWARD "ON" VOLTAGE (VOLTS)
I"
r-. 1
200 oC-
I
TOSOOV,~Q'"
./J - - - - VAK ~ 400 V " ' T0800V
~
'/1
I
TJ = 25 0 C_
Q
I
I
100
~
~
1 2 3
4
5 6
7 8
9 10 11 12
of, FORWARD "ON" VOLTAGE (VOL TSI
DESIGN NDTE CONTINUED
1000I
J
6T(t41'" I 1000 [0.0205 + (1 - 5.25 • 10.3 ) 0.27 + 5.25 • 10.3 - 0.271
+ 700 [(1 - 7.75.10.3 ) 0.27 + 7.75· 10.3 - 0.2711 3'" 93.51 o C
I~J
800
AT(t5) =- I 1000 (0.032 + 11 - 5.25.10.3 ) 0.27 + 5.25 • 10.3 - 0.27 - 0.02051
+ 700 10.025 + (1 - 7.75.10. 3 ) 0.27 + 7.75.10.3 - 0.27) I 3'" 10S.6oC
I
~ 600 I
~
'"
~
..
:
I
I
I
I
I
I
P,
r-I'r--
i
400
i"'.
I
in
~:-..
PA
i--IA'
I,
200
o
o
, i
, I
,
!-- APf'ROXIMATION
P~
I,
"'",
-.......:
I
0.5
!
1.0
1.5
2.0
2.5
3.0
3.5
. / ~CTUAl PULSE
"l
'N
4.0
4.5
5.0
I,TIMEI.,I
FIGURE A - SIMPLE MDDEL
FIGURE B - MORE ACCUI!ATE MODEL
7-37
FIGURE C - AN ACTUAL TRANSIENT POWER PULSE
2N4199 thru 2N4204
SWITCHING CHARACTERISTICS
TRIGGERING CHARACTERISTICS
FIGURE 9 - DELAY TIME
FIGURE 10 - TYPICAL PULSE TRIGGER CHARGE/CURRENT
500
300
] 200
w
'"~ 100
:5
~
,I
....
-- --
MAXIMUM
............ I---.
-
.....
............
TYPICAL
70
0
100
VA~" 40d V.ITIM· ~01r-
0.1 pF CAPACITANCE
DISCHARGE CIRCUIT
TJ=-65TO+l0SDC _
100
VAK = 7 V
~ 70
w
0
~IGT
r-!
0:
I-
«
5
r- 1-:--,
to
to
'IIV
"- I),
30
!'\ .""-
0:
W
70
TJ=-65 DC
to
20
1111D
"
"'
....
w
~1 0
8 0 GT
to
,.:: 7
501
V
v
v
V
25 C
~
.....
~
/
30 ~
'"
20 '"'
l/
ffi
to
to
1o~
w
7 ~
to
0
(rl~E TIME
20
70
50
to
'"
or 1
fl
GAT TRIGGEr PULS,E ~ 2rnsl,
100
200
500
300
700
3
0.05 0.07 0.1
1000
0.2
IG. GATE CURRENT (mAl
1.8
~F
~ ;::;:::
"
0
•
0
0
100
~
-
-650 C
1.4
w
~ 1.2
~
I
~;:c
....... 2S DC
........
~
----
...........
l"'-
i-
1.0
3X~ ~k1J
IDA
ITM"II
w
~ 10 -I-~
~
~
I--
7.0
::>
~ 5.0
~
..... I"""
-'
"
P 3. 0
,-
1---
1--",1--'
k
-40
~-
-
10-
-20
~
~
0:
-
~ 0.6
i--"
r-
-
TYPICAL'
-;;: VD
RATED VORM
M!I~~M
~ 0.4
to
~ 0.2 1-1- NON·TRIGGER REGION
>
t-
o
-80
-60
-40
-20
20
40
60
aD
100
120
TJ. JUNCTION TEMPERATURE (OCI
i
,g
~~
B
70
r50
I"--
W
g
'"z
'"~
'"
1.0
~
300
~~
o-JO.)DR~
/W
w
./
2000
. / /. V
:>
~
0.7
~
O.S
~
::r
ffi
ffi:::;
i'...
r--....
-I"-
O~3
:!
i'l"1
-'
200
300
SOD
IUD
1000
2000
dvldt. LINEAR RATE OF APPLIED VOLTAGE
"'1il1:>'"
:>
3000
-
~ 700
500
SOOO
I10SoC
0.2
{VI"~
I
./
w
"'
P
~
20
'"z
10
13
/'
/
V V
......-
/
§
3
'"'"
TTPIC~
2
~
I
IT:
0.5
0.2
-60
1.0
R~VERSE
2.0
3.0
S.O
VOLTAGE (VOLTS)
-
-
~L@TJ=1050C- I
I
I
<';;~M @.fJ = 10~OC- -
FORWARD
I-L f-- REVERSE
-40
-20
20
40
60
80
100
120
+0.5
TJ. JUNCTION TEMPERATURE (OC)
-I
-3
-2
-5
VGK. GATE·TO·CATHOOE VOLTAGE (VOLTS)
FIGURE 19 - TYPICAL ANODE-TO-CATHODE CAPACITANCE
50
FIGURE 20 - TYPICAL GATE·TO-CATHODE CAPACITANCE
~ 240
~
~
w
u
TJ = 25°C
z
'" 30
w
'"
!;(
U
'"
200 1\
5
g
180
;t
w
r-....
~
220
z
"'-
~ 20
'"'"
w
u
I-
2N4204
t;
;t
'"
:;:;
/'
....-
~ 30
I-
~ I~
~
GAT~ OPE~
:;:
MAXIMUM
50
20
0.7
TVPICAL@TJ=2SoC
VAK=IVt==
70
100
a
O.S
FIGURE 18 - HOLDING CURRENT
50
200
~
0.3
100
~ 500
I-
:...r---
VGK. GATE·TO·CATHODE
FIGURE 17 - FORWARD BLOCKING CURRENT
2000
1000 .."VO = VORM
/
2SoC
i--
40 0
0.1
~
I-'
L -
'"w
~
~ 0.2
100
TJ = -6SoC
~
~ 1000
~
10
\
'" 160
!;(
'"w
140
'"'"
120
I-
I-
'"
~
'"""
:3
""
(§ 5
1
10
20
50
100
200
500
1000
100
'" --~ ........
~
.......
TJ = 2SoC
o
-2
r-.
-6
r-- I---8
VGK. GATE.TO·CATHOOE VOLTAGE (VOLTS)
VAK. ANOOE·TO·CATHOOE VOLTAGE (VOLTS)
7-39
-10
•
2N4212
thru
2N4216
SILICON CONTROLLED
RECTIFIERS
REVERSE BLOCKING TRIODE·THYRISTOR
PNPN
1.6 AMPERES RMS
25-200 VOLTS
· . . all·diffused PN PN devices designed for operation in mA/1lA
signal or detection circuits.
•
Low·Level Gate Characteristics IGT =100 jl.A Max@ 2So C
• Low Holding Current - IHX =3.0 mA Max @ 2So C
• Anode Common To Case
• Glass·to·Metal Bond for Maximum Hermetic Seal
~IJ~::':
~
*MAXIMUM RATINGS
(TJ
Symbol
Peak Repetitive Forward and Reverse
Blocking Voltage
2N4212
2N4213
2N4214
2N4215
2N4216
Forward Current R MS
(All Conduction Angles)
Peak Surge Current
Rating
VORM
or
VRRM
SE:~~~ -11-0
Volt
0/'1
100
150
200
M
IT(RM,S)
1.6
Amp
ITSM
15
Amp
STYLE
PIN 1. CATHODE·
2. GATE
3. ANODE ICONNECTEO TO CASE)
DIM
A
PGFM
0.1
Watt
PGF(AV)
0.01
Watt
Peak Gate Current - Forward
IGFM
0.1
Amp
Peak Gate Voltage - Forward
VGFM
6.0
Volt
Reverse
Operating Junction Temperature
If.GRM
6.0
TJ
-65 to +125
°c
T stg
-65 to +150
-
+230
°c
°c
(> 1/16.. from case,10 ..,c, max)
B
C
o
E
F
G
H
J
Range
Storage Temperature Range
Lead Solder Temperature
.
t3Y'V¥J
H
25
50
No Repetition until
Thermal Equilibrium
is Restored
Peak Gate Power - Forward
K
~
Unit
(One Cycle, 60 Hz)
Average Gate Power - Forward
L
:::::::.ti
= 1250 C unless otherwise noted)
Characteristic
•
c
--
K
L
M
P
n
R
MILLIMETERS
MIN MAX
8.89 9.40
8.00 8.51
6.10 6.60
0.406 0.533
0.229 3.18
0.406 0.483
4.83 5.33
0.711 0.864
0.737 1.02
12.70
6.35
45 0 NOM
1.27
90 0 NOM
2.54
All JEDEC dimensions and notes apply.
CASE 79-02
• JEOEC Registered Values.
TO-39
7-40
2N4212 thru 2N4216
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted RGK
, = 1000 ohmsl
Characteristics
·Peak Forward and Reverse Blocking Current
Symbol
IORM
or
IRRM
iRated VORM and VRRM, T J = 12SoC)
·Forward "On" Voltage
VTM
(lTM = 1.0 Adc peak)
Gate Trigger Currant (Note 2)
(Vo = 7.0 V, RL = 100 ohms)
(TC = 25°C)
(TC = -65°C)
IGT
Gate Trigger Voltage
(VO = 7.0 V, RL = 100 ohms, TC = 25°C)
"(VO = 7.0 V, RL = 100 ohms, TC = ~650C)
"(Vo = Rated VORM RL = 100 ohms, TJ = 125°C)
VGT
Holding Current (VO
Min
Max
Unit
-
200
I'A
-
1.5
"Ade
-
-
-
0.1
= 7.0 VI TC = 25°C
"TC = -65°C
Volt
100
300
Volt
0.8
1.0
-
IHX
3.0
7.0
Turn-On TIme
ton
Turn·Off Time
toll
Circuit dependent,
consult manufacturer
•
JEOEC Registered Values
Notes: 1. VORM and VRRM can be applied for all types on a
continuous de basis without incurring damage.
2. RG K current is not included in measurement.
Thyristor devices shall not be tested with a cqnstant current source
for forward or reverse blocking capability such that the voltage applied
exceeds the rated blocking voltage.
Thyristor devices shall not have a positive bias applied to the gate
concurrently with a negative potential applied to the anode.
FIGURE 2 - AMBIENT TEMPERATURE
FIGURE 1 - CASE TEMPERATURE vsCURRENT
YS
CURRENT
R
~130r---'----r---'----.----r---;-;--'----'
:
mA
~140r----.----.-----r----.-----r----r----'
:;:
~ 110~b;;:-+----+~--+----+--- ~
120~~~~-+--~----+---~-
~
~110r---~~~~~~--+----t--
5100
~ 100r---+--;-t~~~~~~-r---i----T---~
;:;w BOf---+~~~~-k---+--r----+---l
.
..~
-1 10
90
80
§l
"x
"'"
70
~ 60 0
0.2
0.4
0.6
1,0
IT!AV). AVERAGE ON STATE CURRENT (AMP)
Il(AVI, AVERAGE ON·STATE CURRENT lAMP)
7-41
2N4441
thru
2N4444
.,~~G_OK
A O>-_.....
SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING TRIODE THYRISTORS
B.O AMPERES RMS
50 thru 600 VOLTS
. designed for high·volume consumer phase·control applications
such as motor speed, temperature, and light controls and for switch·
ing applications in ignition and starting systems, voltage regulators,
vending machines, and lamp drivers requiring:
• Small, Rugged, Thermopad 10 Construction - for Low Thermal
Resistance, High Heat Dissipation, and Durability.
• Practical Level Triggering and Holding Characteristics @ 250 C
IGT = 7.0 mA (Typ)
IH = 6.0 mA (Typ)
•
Low "On" Voltage - VTM
= 1.0 Volt (Typ) @ 5.0 Am:p @ 250 C
• High Surge Current Rating - ITSM = 80 Amp
"
ur=r-rf'
M-1t-, '
G A
MAXIMUM RATING
(TJ ~ l000C unless otherwise noted)
Rating
Blocking Voltage (Note1) 2N4441
Volts
vORM
VRRM
50
200
400
600
2N4442
2N4443
2N4444
-Non-Repetitive Peak Reverse Blocking
Voltage (t
= 5.0 ms (max)
•
300
500
700
Amp
8.0
= 7:!'C
5.1
Amp
ITSM
80
Amp
12 t
25
A 2s
Watts
Watt
.IT(AVI
(112 cycle. 60 Hz preceded and followed by
rated current and voltage)
Circuit Fusing
(TJ = -40 to +1000C;
t = 1.0 to 8.3 msl
·Peak Gate Power
... Average Gate Power
·Peak Forward Gate Current
·peak Reverse Gate Voltage
*Operating Junction Temperature Range
*Storage Temperature Range
Mounting Torque 16:32 screw) (Note 2)
~
~
F
M
0
V tH
K
STYLE 1:
PIN 1. CATHODE
2.ANOOE
3. GATE
NOTES:
1. DIM "0" UNCONTROLLED IN ZONE "H"
2. DIM "F" OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEADS WITHIN 0.005" RAO OF TRUE
POSITION (TPI AT MAXIMUM MATERIAL
CONDITION.
PGM
5.0
0.5
IGM
2.0
Amp
VRGM
10
Volts
DIM
°c
A
B
C
0
TJ
-40 to +100
T stg
-40 to +150
-
8.0
°c
in. lb.
MILLIMETERS
MIN
MAX
16.13
12.57
3:18
16.38
12.83
3.43
Ii
~
Symbol
Typ
Max
Unit
f-fi-f-
R6JC
-
2.5
°C/W
fi<
40
-
M
R6JA
°C/W
n
R
U
*Indicates JEDEC Registered Data.
A-rrademark of Motorola Inc.
- Notes 1, 2,See page 2
V
4.70
1.91
6.22
2.03
4.95
2.16
6.48
-
INCHES
MIN MAX
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
'0.166 BSC
0.105· 0.115
0.032 0.034
0.595 0.645
9' TYP
0.185 0.195
0.075 0.OB5
0.245 0.255
0.080
CASE 90-05
7-42
..
--l~J
~
~=it
PG(AV)
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
B'-'
-l~tO.
IT(RMS)
·Peak Non-Repetitive Surge Current
--ru
.
. 75
(All Conduction Angles)
Average On-5tate Current. TC
,
Volts
VRSM
duration)
2N4441
2N4442
2N4443
2N4444
*RMS On-5tate Current
Unit
Value
Symbol
Peak Repetitive Forward and Reverse
2N4441 thru 2N4444
ELECTRICAL CHARACTERISTICS eTC = 25°C unless otherwiso noted)
Characteristic
Svmbol
Peak Forward Blocking Current
evO
= Rated VORM, TJ = l00o e, gate open)
Peak Reverse Blocking Current
evO = Rated VRRM, TJ = 100o e, gate ?pen)
IRRM
Gate Trigger Current (Continuous de)
1VO" 7.0 Vdc, RL = 100 Ohms)
IGT
Te
• Te
= 25°C
= -40o e
Gate Trigger Voltage (Continuous de)
1VO = 7.0 Vdc, RL = 100 Ohms)
Te = 25°C
1VO = 7.0 Vde, RL = 100 Ohm,)
Te = _40°C
1VO = Rated VORM, RL = 100 Ohms)
TJ = 100°C
VGT
Peak On·State Voltage
(Pulse Width = 1.0 to 2.0 ms, Duty Cycle':;; 2.0% )
IITM = 5.0 A peak)
• IITM = 15.7 A peak)
VTM
Holding Current
Te= 25°C
= -40o e
• Te
Gate Controlled Turn-On Time
= 5.0A,
IR
Max
-
-
2.0
-
-
2.0
tq
= 5.0 A, T J = 10o"e)
Critical Rate of Rise af Off-St:
SURGE IS PRECEDED AND FOLLOWED
8Y RATEOICURRE~TANDIVOL1AG~
~
3.0
10
o
2.0
1.0.
3.0
6.0
4.0
8.0
2.0
-40
10
FIGUR~
7 - TYPICAL GATE TRIGGER CURRENT
VD -
w
i.o Vdc
ffi
'"a:
~
.......
7.0
.",
...w
5.0
~
--- ---
,t; 3.0
-20
20
1.0
.........
'"~
'"
2.0
-40
40
100
60
VD - 710 Vdc
g
10
...,
80
FIGURE 8 - TYPICAL GATE TRIGGER VOLTAGE
.§
z
60
1. 2
"... r----.
0:
0:
40
TJ. JUNCTION TEMPERATURE lOCI
.20
:>
20
-20
NUMBER OF CYCLES
--
o
-
>
ffi
i'-
w
~
-
~
'"
...'"a:
.......
80
0.8
.............. I---..
0.6
'",.:
>'"
0.4
-40
100
-20
20
40
60
----
80
100
TJ.JUNCTION TEMPERATURE lOCI
TJ. JUNCTION TEMPERATURE lOCI
•
7-45
2N4851
thru
2N4853
PN UNIJUNCTION
TRANSISTORS
SILICON UNIJUNCTION TRANSISTOR
designed for pulse and timing circuits, sensing circuits, and
thyristor trigger circuits.
• Low Peak·Point Current - Ip = 0.4 p.A Max
•
Low Emitter Reverse Current - IEO = 50 nA Max
• Fast Switching - 1.0 MHz Min
*MAXIMUM RATINGS ITA
Rating
RMS Power Dissipation 11)
= 25 0 C unless otherwise noted)
Symbol
Valua
Unit
Po
Ie
ie
300
50
1.5
30
35
-65 to +125
-65 to +200
mW
mA
Amp
Volts
Volts
RMS Emitter Current
Peak-Pulse Emitter Current (21
Emitter Reverse Voltage
Interbasa Voltaga (3)
VB2E
VB2Bl
TJ
Tstg
Operating Junction Temperature Range
Storage Temperature Range
°c
°c
'Indicate. JEDEC Registered Oat.
SEATING
PLANE
(1) Derate 3.0 mW/oC inqrease in ambient temperature
(2) Duty cycle .. 1%, PRR = Isee figure 6)
(3) Basad upon power dissipation at T A = 250 C
II
FIGURE 1 - UNIJUNCTION
TRANSISTOR
SYMBOL ANO NOMENCLATURE
-
162
-
IE
I
Ve
E
NOTE:
1. PIN 3 CONNECTED TO CASE.
FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES
VE R~~~~:I~~E
CUTOFF
'_REGION _ _ SATURATION
REGION
REGION
Vp
II
U<:.T
POINT
62
)
Bl
VBE1Isat)
Vv
-Ip
I
I
162
= 0
2. BASE 1
3. BASE 2
DI~'
-t---- -=--V---.....c..
I
I
I
PIN 1. EMITTER
EMITTER TO
6ASE ONE
CHARACTERISTIC
VALLEY \
POINT
VB2Bl.
STYLE 1:
I
III
I
A
B
C
o
G
H
J
K
M
IV
N
lEO
MILLIMETERS
MIN MAX
5.31 5.B4
4.52 4.95
4.32 5.33
0.41
0.48
2.54 TYP
0.91
1.17
0.71
1.22
12.70
45.TYP
1.27 TYP
CASE 22A ·01
ITO.1S Ex.~Pt for Lead Position)
7-46
2N4851 thru 2N4853
ELECTRICAL CHARACTER ISTICS
(TA ~ 25°C unle.. otherwise noted)
Figura
No.
4,8
Rating
'Intrlnsic Standoff Ratio (11
(VB2B"1 ~ 10 VI
Symbol
2N4851
2N4852, 2N4853
·'ntarbese Resistance
11,12
Typ
Max
0.56
0.70
-
-
0.75
0.85
4.7
-
9.1
12 .
0.2
-
0.8
-
2.5
-
-
15
-
-
-
0.1
0.05
-
-
2.0
0.4
2.0
4.0
6.0
-
-
-
-
-
%/oC
aBB
VEB1(satl
IB2(modl
7
IEB20
-
9,10
Ip
13,14
Volts
5
mA
IlA
IlA
mA
IV
3,17
Unit
kohms
rBB
(VB2Bl ~3.0V,IE ~O)
·'ntarbase Resistance Temperature Coefficient
(VB2Bl ~ 3.0 V, IE ~ 0, TA = -65 to +125°<;1
Emitter Saturation Voltage (21
(VB2Bl ~ 10 V, IE ~ 50 mAl
Modulated Interbase Current
(VB2Bl ~ 10 V, IE ~ 50 mAl
·Emitter Reverse Current
2N4851, 2N4852
(VB2E ~ 30 V,IBI ~ 0)
2N4853
·Peak..point Emitter Current
2N4851, 2N4852
(VB2Bl ~ 25 VI
2N4853
'Valley-Point Current (21
(VB281 =20V,RB2= 1000hmsl 2N4851
2N4852
2N4853
'Bese-One Peak Pulse Voltage
2N4851
2N4852
2N4853
*Maximum Frequencv of Oscillation
Min
11
-
vOBI
3.0
5.0
6.0
-
f(max)
1.0
1.25
-
Volts
MHz
'Indicates JEOEC Registered Data.
(1) 11, Intrinsic standoff ratio, is defined in terms of the peak-point voltage, Vp. by means of the equation: Vp = 1J VS2B1 + VF. where VF is
about 0.49 volt at 25°C @ IF = 10 #LA and decreases.with temperature at about 2.5 mvfJC. The test circuit is shown in Figure 4. Components
R,. C" and the UJT form a relaxation oscillator; the remaining circuitry serves as a peak-voltage detector. The forward drop of Diode 01
compensates for VF. To, use, the "cal" button is pushed, and R3 is adjusted to make the current meter, M1, read full scale. When the "cal"
button is released, the value of 7) is read directly from the meter, if full scale on the meter reads 1.0.
(2) Use pulse techniques: PW ~ 300 IJ.S. duty cycle" 2.0% to avoid internal heating, which may result in erroneous readings .
FIGURE 3 - VOBI
TEST CIRCUIT
FIGURE 4 Vl '
~
FIGURE 5 - f(max)
TEST CIRCUIT
TEST CIRCUIT
+10 V
Vl
+20V
FIGURE 6 - PRR TEST CIRCUIT
ANOWAVEFORM
DUTY CYCLE .. 1%. PRR" 10 pp.
+ 20 V
RB2
100 !l
R1ADJUSTED
~_~--.:",FOR f(max)
Cl
0.15 ~;:f==t====:::::lF---F
CURRENT WAVEFORM THRU Rl
O.lIlF
0.21lF
RBl
47 !l
to,. diode with the following
characteristics:
~
0.49 V @ I F
~
20-30 V
(Adjust for
1.5 A
peak in A,)
l,10llA FULL SCALE
VF
TO
FREQUENCY
COUNTER
10 IlA
IR"2.0IlA@VR~20V
7-47
•
2N4851 thru 2N4853
TYPICAL CHARACTERISTICS
FIGURE 8 -INTRINSIC STANDOFF RATIO
FIGURE 7 - EMITTER REVERSE CURRENT
!
1.0
0-
O. 5
~
o. 2
'~
<.>
w
o. 1
'"ffi
G; 0.05
'"
~
~sy-
VB2Bl = 10 V
&II OPEN FOR lEB20
SW CLOSED FOR IEB2S
I
-
A
o
;::
~
......'"
< O.
B__
z
L
'./
./
~
IL
O. 1
<.>
0-
~ 0.00 2 ::::::...
ffi 0.00 1
:!: O.6
-
-60
'"
~ r'
-40
-20
20
40
60
BO
100
120
O. 5
-60
140
I--
2N4B52, 2N48 3
I--
2N4B5\
-
I--
~
;;;
0.00 5== IEB2
--- -- ---I--
0
0
0.02
0.01
!
j
D-9
-40
20
ro
~
~
N00
100
lro
NO
TJ, JUNCTION TEMPERATURE (OC)
TJ,JUNCTION TEMPERATURE (OC)
PEAK POINT CURRENT
FIGURE 9 - EFFECT OF VOLTAGE
FIGURE 10 - EFFECT OF TEMPERATURE
2. 5
TJ=25 0 C
;<
-=z
0-
w
a:
a:
::>
<.>
'"
w
2. 0
1. 5
1=
~
0Z
~<
Il!
V82Bl = 25 V
B
~\
1\ \
\ I'\.
6 ........
r--
'\,
1.0
"
'\..
o
o
4
...........
i'-..
O. 5
!f
•
1.0
3.0
6.0
9.0
"-
2N4851,2N4B52
~
2N4853
~
2"
t--...
12
15
lB
21
24
21
0
-60
3D
-
l""- t---
--
2N4B51,2N4B52
.......... r--
2N4B53
I
-40
ro
-20
VB2BI, INTER BASE VOLTAGE (VOLTS)
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (OC)
INTERBASE RESISTANCE
FIGURE 11 - EFFECT OF VOLTAGE
Ii:
N
1.5
::;
~
1.4
FIGURE 12 - EFFECT OF TEMPERATURE
2
NORMALIZED Q!l3.0 V
TJ = 250 C
IE=O
/
o
z
~
iii'"
~
1.3
1.
:
c:r:
1.0
. . . .V
a:
.,./ r'"
~
M
~
~
U
~
ffi
~
~
........ ~4B52
0
~
8. 0
V
ffi
~
6.0
;
4.
,/'
V
......... V
-40
20
20
40
60
. BO
TJ, JUNCTION TEMPERATURE (OC)
VB2B1.INTERBASE VOLTAGE (VOLTS)
7-48
21«B51
O~
2. 0
-60
~
....
.......".
w
~
V
./
1
o
~
V
1.2
ffi
~
~
V
W
~
w
<.>
2N4B53
VB2B1 = 3.0 V
IpO
g
100
120
140
2N4851 thru 2N4853
TYPICAL CHARACTERISTICS
VALLEY CURRENT
FIGURE 14 - EFFECT OF TEMPERATURE
FIGURE 13 - EFFECT OF VOLTAGE
16
6
TJ· Z50C
'4 . RBZ· '0011
1
.... ,Z
~
0:
,
~
0
Z~4B~
S;
~
8.0
;
6.0
~
4.0
~
...:::
.? z.0
0
3.0
6.0
----
~ :/""
9.0
'Z
~
~
......... l--
---,.
"....
oS
~
'8
~
Z4
Z7
--~
-- --
Db- r-..
r- .:::::::
8.0
~ Or-~ 6.
f-
ZI
Z
~
~
I--Z~485'
'5
VBZ8'· ZO V
4r-- R8Z·'001l
.?
4. 0
ZN4ii51'
Z.O
0
-60
30
I- 2N4853
-40
-ZO
ZO
VBZ81.INTERBASE VOLTAGE (VOLTS)
40
r- rr-
r- ~r-
I"'"
r--
...... 1"-
60
80
'00
'ZO
140
TJ, JUNCTION TEMPERATURE (DC)
VALLEVVOLTAGE
FIGURE 16 - EFFECT OF TEMPERATURE
FIGURE 15 - EFFECT OF VOLTAGE
1.8
I. 8
TJ =Z5 0 C
VBZB1· 10 V
TJ.Z50 C
~
1.7
0
~
w
'"«
~
0
1.6
>
~«
> ·1.5
/
V
,;
>
1.4
o
3.0
B.O
V
90
V
V
./
V
~
-- --""" -
I--6-
r- r-
4
-
2
12
15
18
21
24
21
1. 0
30
-60
-40
w
-ZO
VBZ81.1NTER8ASE VOLTAGE (VOLTS)
~
00
~
'00
'W
MO
TJ,JUNCTION TEMPERATURE (DC)
FIGURE 17 - OUTPUT VOLTAGE
~ 20
RB,-'OOIl
~ '0
'"~ 1.0
o
>
,
5.0
~ 3.0
....
,. ,.
~ 2.0
""
,......-: 1---
~w to
:zz
O. 7
~ O. 5
;; O. 3"
o
> O.Z
0:00'
--'
.....
0.002
-
-0.005
--:- .- - - - --'.-'
.... 1-
I- ~
,~-'
,'" _...
I---
0.0'
O.OZ
0.05
0.'
on
~-
-
,Oll
(SEE FIGURE 3)
o.Z
C" CIRCUIT CAPACITANCE, EMITTER TO GROUND (.FI
7-49
'-r--
~<
0.5
-
1.0
-VI = ZO V
RBZ·'OOIl
TA·250 C
2N4B5'
- - ZN4852, ZN4853
2.0
5.0
'0
•
2N4870
2N4871
,IL---_ _
~__'__::_-----'
SILICON
PN UNIJUNCTION
TRANSISTORS
UNIJUNCTION TRANSISTORS
.designed for pulse and timing circuits, sensing circuits, and
thyristor trigger circuits. These devices feature:
,
•
•
•
Low Peak Point Current - 1.0 JJ.A Typical
Low Emitter Reverse Current - 5.0 nA Typical
• Passivated
Surface for Reliability and Uniformity
One·Piece Injection·Molded Unibloc* Plastic Package for
Economy and Reliability
B1
MAXIMUM RATINGS (TA = 25 0 unless otherwise noted)
Rating
Symbol
Value
Unit
PD'
300
",W
Ie
50
1.5
30
36
·55 to +125
-55 to +150
mA
RMS Power Dissipation·
RMS Emitter Current
Peak·Pulse Emitter Current,··
ie••
Emitter Revers~ Voltage
VB2E
Interbase Voltaget
Operating Junction Temperature Range
Storage Temperature Range
VB2B1t
TJ
T stg
Amp
VoltS
Volts
r-tB
A
SEATINGP~i---'-==fT1
~
,
PLANE F
-------1
°c
°c
K
I
·Derate 3.0 mW/DC increase in ambient temperature.
""Duty cycle <; 1%, PRR = 10 PPS (see Figure 51.
taased upon power dissipation at TA = 2SoC.
FIGURE 1 -UNIJUNCTION
TRANSISTOR SYMBOL
AND NOMENCLATURE
FIGURE 2 -STATIC EMITTER
CHARACTERISTICS CURVES
STYLE 9:
PIN I. BASE 1
1, EMITTER
3 BASE 1
182
CUTO'f
REGION
DIM
A
B
C
D
E
F
G
V8281
H
J
VE81 (sat)
MILLIMETERS
MAX
MIN
4.32
4.44
3,18
0,41
0,41
1.14
INCHES
MIN
MAX
0.170
0.175
0.125
0,016
0.016
0,045
-
0,210
0,205
0,165
0,022
0,019
0,055
D.l00
0,105
0,095
0,500
0,25D
L
2,92 0,080 0,115
N
P
0,115
R
1
S
0..41 0.014 0,016
All JEDEC dimensions and notes apply,
Vv
K
1.41
12,70
6,35
2.03
1,92
3,43
0,36
5,33
5.11
4,19
0,56
0,48
1,40
1,54
2,67
-
CASE 29'()2
7-50
2N4870,2N4871
ELECTRICAl. CHARACTERISTICS
(T A: 25°C unless otherwise noted)
Chafilct8ri:!rtic
Intrinsic Standoff Ratio·
IVS2Bl : 10 V)
Fig. No.
Symbol
4,7
11·
2N4870
2N4871
Interba,e Resistance
IVB2Bl : 3.0 V, 'E: 0)
Intarbasa Resistance Temperature Coefficient
IVB2Bl : 3.0 v, 'E: 0, TA: -65 to +1250 C)
Emitter Saturation Voltage··
IVB2Bl : 10 V, IE: 50 mAl
Modulated Interbasa Current
IVB2Bl: 10 V, 'E: 50 mAl
Emitter Reverse Current
(VB2E: 30 V, 'Bl : 0)
Peak·Point Emitter Current
IVB2Bl : 25 V)
Valley·Point Current· *
(V82Bl = 20 V, RB2: 100 ohms)
10,11
Min
Typ
Max
0.56
0.70
-
0.75
0.85
4.0
6.0
9.1
0.10
-
0.90
-
2.5
-
-
15
-
-
0.005
1.0
-
1.0
5.0
2.0
4.0
3.0
5.0
. 5.0
7.0
6.0
8.0
-
kohms
%/oC
aRBB
VEBHsatl··
'R2(mod)
6
'EB20
8,9
Base-One Peak Pulse Voltage
Volts
mA
IlA
Ip
12,13
2N4870
2N4871
2N4870
2N4871
-
RB8
11
Il A
IV··
3,16
VOBI
Unit
mA
-
Volts
-
... 12. Intrinsic standoff ratio, is defined in terms of the peak-point voltage. Vp. by means of the equation: Vp = 11 VS2Bl + VF. where VF is
@ IF = 10 JlA and decreases with temperature at about 2.5 mV IOC. The test circuit is shown in Figure 4. Components
R" C" and the UJT form a relaxation oscillator; the remaining circuitry serves as a peak~voltage detector. The forward drop of Diode 01
about 0.49 volt at 25°C
compensates for VR, To use, the "c~I" button is pushed, and R3 is adjusted to make the current meter, Ml. read full scale. When the "cal"
button is released, the value of n is read directly from the meter, if full scale on the meter reads 1.0.
** Use pulse techniques: PW ~ 300 /.LS, duty cycle.so; 2.0% to avoid internal heating, which may result in erroneous readings.
FIGURE·3 -VOBI TEST CIRCUIT
VI
FIGURE 4
-1)
TEST CIRCUIT
FIGURE 5 - PRR TEST CIRCUIT
AND WAVEFORM
+10V
DUTY CYCLE -:;;;; 1% PRR.~ 10 pps
+20 V
Rl
RB2
20kn
loon
I
0.15
CAC'1
~::t==:.i=======*---F-
R2
CURRENT WAVEFORM THRU Rl
910 kn
Ell
Vos,
~
°l t
C2
R3
100 k1!
1.0 IlF
Cl
O.IIlF
20·30 V
(Adjust for 1.5 A
peak in A1)
to" diode with the following characteristics:
VF =0.49V@IF=10IlA
IR" 2.0 IlA@VR: 20 V
7-51
-=-
2N4870. 2N4871
. TYPICAL CHARACTERISTICS
FIGURE 6 - EMITTER REVERSE CURRENT
;c
1. 0
-=ffi
O. 5
a~
O. 2
~
o. 1
~
0.0 5
-
-40
o. 6
~
IEB2
,;
~o.oo 2~'~
wO.oo 1
-60
o
-r
-
jo.oa5~
-
FIGUAE 7 - INTRINSIC STANDOFF RATIO
o. 9
-20
W
W
~
M
~
r--
r--
r--
O. 5
~
lW
-- -- - -
-60
-40
r-
-20
W
-
W
~
2N4B71
2N4B7~
-
IM
100
lW
~
TJ.JUNCTION TEMPERATURE (DC)
TJ. JUNCTION TEMPEIfATURE (DC)
PEAK POINT CURRENT
FIGURE 8 - EFFECT OF VOLTAGE
FIGURE 9 - EFFECT OF TEMPERATURE
3.0
TJ
;c
-=>-
2.5
\
~
z
~
~
0.5
«
a
;c
.-=>~
\
..... ............
1.2
1.0
-
z
~ 0.4
"". 0.2
«
~
.!f-
:sf.
3.0
6.0
9.0
12
15
18
21
24
27
o
-60
30
-40
20
-20
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE (OCI
VB2Bl.INTERBASE VOLTAGE (VOL TSI
INTERBASE RESISTANCE
FIGURE 10 - EFFECT OF VOLTAGE
FIGURE 11 - EFFECT OF TEMPERATURE
1.4
NO RMALIZEO @ 3.0 V
TJ = 250 C
IE = 0
ffi
N
:::;
«
io1i
10
~
z
~w
~
ffi
~
::l
a:
1.2
. . .V
1. 1
1.0
o
3.0
---
v
6.U
V
9.0
V
/
u
z
V
15
18
21
8.0
~
~w
~
6.0
~
4.0
./
>-
;;
...........
12
./'"
w
I
1.3
z
~
VB2Bl = 3.0 V
IE = 0
a
:,
24
27
30
V82Bl.INTERBASE VOLTAGE (VOLTS)
~
2.0
-60
-40
....... ...........
-20
2N4870
V
,/
./'
20
40
60
80
TJ. JUNCTION TEMPERATURE (DC)
7-52
~1
100
120
140
2N4870, 2N4871
TYPICAL CHARACTERISTICS
VALLEY CURRENT
FIGURE 12 - EFFECT OF VOL TAGE
FIGURE 13 - EFFECT OF TEMPERATURE
6
;(
..s
I-
ffi
a:
a:
a
16
TJ = 250 C
4 RS2 = 1001l
..s
12
6. 0
~
4.0
J?
. /V
...V
2. 0
0
3.0
-
6.0
I
I--
....-
~ 8.0
o
I--
I-""" 2N4B70
~ f-9.0
12
15
IS
21
24
27
12
l-
-irs: - -
10
;
VB2S1 =20 V
14 r-RS2 = 1001l
;(
10
:--
~
8.0
~
~
r-6.0
">
4.0
J?
2.0
0
-60
3D
t--
r-
-40
-20
--
:--:-_
r-- .........
2Ntl
2N4BiiI'
20
40
r- :--..
60
BO
-
-I"-
100
120
140
TJ, JUNCTION TEMPERATURE (OC)
VS2Blo INTER,SASE VOLTAGE (VOLTS)
VALLEY VOLTAGE
FIGURE 14 - EFFECT OF VOLTAGE
FIGURE 15 - EFFECT OF TEMPERATURE
B
I.B
TJ = 250C
.-./I--
~
~
o
1. 7
.,,/
~
W
~
~
>
~
">:>
V
1.6
"o
:;
/
>
>
~
">j
V
1.4
o
30
80
90
12
15
18
21
24
21
r-- t--
1.4
-..
1.2
1.0
-60
3D
-
:-- :--
w
to
/
1. 5
t-1.6
~
./
to
VS2Bl = 10 V
~o
-40
-20
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (0 C)
VB2Bl..1NTERBASE VOLTAGE (VOLTS)
FIGURE 16 - OUTPUT VOLTAGE
u; 20
:;
RBI
o
2:.
10
~
1. 0
~
_....
5.0
>
~ 3.0
~
'"
;:li
~
1.0
~
O. 7
~
I---:::
o. 5
;;'; 0.3
~ 0.2
Q.QOl
-- ....
~ 2.0
""~'
0.002
-
0.005.
- - ,-,- -:- -
-' .-...-:
~
~
~-
.-
=
1O01l
20[1
~
.- -
lOll
.....
!ill":::
tSEEFIGURE31
Vl- 20~l=
RB2 -1001l
TA - 25 0 C
2N4B70
--2N4871
f
0.01
0.02
0.05
0.1
0.2
0.5
Cl, CIRCUIT CAPACITANCE, EMITTER TO GROUND ("F)
7-53
1.0
2.0
5.0
10
2N494S2N4949
_~--------,---E
'I'--
::_----'
PN UNIJUNCTION
TRAN~ISTORS
SILICON UNIJUNCTION TRANSISTORS
, .. designed for military and industrial use in pulse, timing, trigger·
ing, sensing, and oscillator circuits. The annular process provides low
leakage current, fast switching and low peak·point currents as well as
outstanding reliability and uniformity. Recommended usage includes:
• Silicon Controlled Rectifier Triggering Circuits - 2N4948
•
Long·time Delay Circuits - 2N4949
\
MAXIMUM RATINGS (T A ~ 25 0 C unless otherwise notedl
Rating
RMS Power Dissipation·
RMS Emitter Current
Peak Pulse Emitter Current**
Emitter Reverse Voltage
Storage Temperature Range
.
Symbol
Value
Unit
Po
Ie
ie
VB2E
Tstg
360'
50
1.0"
30
-65 to +200
mW
mA
Amp
Volts
°c
NOTE:
1, PIN 3 CONNECTED TO CASE,
STYLE 1:
PIN 1, EMITTER
2, BASE I
3, BASE 2
Derate 2.4 mW/oC increase in ambient temperature. Total power dissipation (available
power to Emitter and Base-Two) must be limited by external circuitry_ Interbase voltage
(VS2Bl) limited by power dissipation, VB2Bl = "'RBB • Po •
*,.
Capacitance discharge current must fall to 0.37 Amp within 3.0 ms and PRR.=;;;; 10 PPS .
SEATING
•
DIM
A
B
C
0
G
H
J
K
M
N
MILLIMETERS
MIN MAX
5,31
5,B4
4,52 4.95
4,32 5,33
0,41
0.48
2,54 TYP
0,91
1,17
0,11
1,22
12.70
45 0 TYP
1.27 TYP
INCHES
MIN r~AX
0,209 0,230
0,178 0,195
0,170 0,210
0,QI6 0,019
0,100 TYP
0,036 0.046
0,02B O,04B
0.500
45 0 TYP
0,050 TYP
CASE 22A·01
TO·18 PACKAGE
(Except for lead position)
7-54
2N4948, 2N4949
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Intrinsic Standoff Aatio
(VB2Bl
= 10 V)
Interbase Resistance Temperature Coefficient
0.82
0.86
4.0
7.0
12.0
0.1
-
0.9
-
2.5
3.0
12
15
-
-
5.0
-
-
10
1.0
-
0.6
0.6
2.0
1.0
2.0
4.0
-
3.0
6.0
5.0
B.O
-
-
1.25
-
%/oC
Volts
VEB1(sat)
= 50 mAl Note 2
rnA
IB2(mod)
= 10 V,IE = 50 mAl
Emitter Reverse Current
IEB20
= 30 V,lBl =0)
= 30 V,lBl =0, TA = 12S0C)
nA
/lA
Ip
Peak Point Emitter Curront
(VB2Bl
-
aRBB
Modulated Interbase Current
(VB2E
(VB2E
0.55
0.74
Unit
kohms
= 3.0 V, IE = 0, TA =-650 C to +100o C)
Emitter Saturation Voltage
(VB2Bl
Max
RBB
2N494B, 2N4949
.(VB2Bl =3.0V,IE=0)
(VB2Bl = 10 V, IE
Typ
-
2N4948
2N4949
Note 1
Interbase Resistance
(VB2Bl
Min
T/
= 25 V)'
/lA
2N4948
2N4949
Valley Point Current
rnA
IV
(VB2Bl = 20 V, RB2 = 100 ohms) Note 2
Base-One Peak Pulse Voltage
(Note 3, Figur. 3)
2N4948, 2N4949
VOBl
2N4949
2N4948
Maximum Oscillation Frequency
Volts
-
MHz
I(max)
(Figure 4)
NOTES
i.
2. Use pulse techniques: PW R:: 300 IlS duty cycle ~ 2% to avoid
internal 'heating due \0 interbase modulation which may result in
Intrinsic standoff ratio.
7), is defined by equation:
T/ =
Where Vp
erroneous readings.
Vp - V(EB1)
VB2Bl
3. Base-One Peak Pulse Voltage is measured in circuit of Figure 3.
This specification is used to ensure minimum pulse amplitude for
applications in SeA firing circuits and other types of pulse circuits.
= Peak Point Emitter Voltage
VB2Bl = Interbase Voltage
V (EB1) = E~itter to Base·One Junction Diode Drop
(" 0.45 V @ 10 /lA)
FIGURE 1 - UNIJUNCTION TRANSISTOR
SYMBOL AND. NOMENCLATURE
FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES
FIGURE 3 - VOB1 TEST CIRCUIT
(Typical Relaxation Oscillator'
v,
'B2
REGION
I
Ve'
V,
+20 V
+20V
R,
20 kO
'e
FIGURE 4 - F(mlxl MAXIMUM
FREQUENCY TEST CIRCUIT
RB2
1000
R,
50 kO
RB2
lOOn
B;
.'
.-
VB2Bl: VEBlhatl
B,
Vv
C,
O.2#F
Ip
Iv
'eo
7-55
vf}l'
RB'
20n
RB'
20 ti
TO
FREQUENCY
COUNTER
•
2N5060
thru
2N5064
AO_--1.DI~
__
G--oOK
SILICON CONTROLLED
RECTIFIERS
REVERSE BLOCKING TRIODE THYRISTORS
Annular. PNPN devi~s designed for high volume consumer
applications such as relay and lamp'drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current - 200 J,lA Maximum
0.8 AMPERE RMS
30 thru 200 VOLTS
• Low Reverse and Forward Blocking Current 50J,lA Maximum, TC = l25 0 C
• Low Holding Current - 5.0 mA Maximum
• Passivated Surface for Reliability and Uniformity
• Also Available with TO-5 or TO-1B Lead Form
MAXIMUM RATINGS(1)
Symbol
Rlting
"Peak Repetitive Reverse Blocking Voltage 11)
(RGK· 1000 ohms, TC = +1250 C) 2N5060
2N5061
2N5062
2N5063
2N5064
VORM
VRRM
On-5tete Current RMS
(All Conduction' Angles)
IT(RMS)
• Average On-State Current
(TC = S70C)
(TC= 10~C)
IT(AV)
Value
Unit
Volts
30
60
100
150
200
0.8
MB
Amp
Amp
0.51
0.255
·Peak Non-Repet'itive Surge Current, T A:: 2SoC
...""1;:PI~
~
PLANE F _
1~IHI--j..L
ITSM
10
Amp
12 t
0.15
A 2s
PGM
0.1
Watt
(112 cycle, Sine WINe, SO Hz)
Circuit Fusing Considerations. TA = 25°C
•
D~1iG
..:1 J 1-=
(t = 1.0 to 8.3 ms)
'Peak Gate Power. T A = 25°C
PG(AV)
0.Q1
Watt
·Peak Forward Gate Current, T A = 2SoC
(3OO~s. 120PPS) ,
IFGM
.1.0
Amp
·Peak Reverse Gate Voltage
VRGM
5.0
Volts
TJ
S5 to +125
°c
T stg
S5 to +150
°c
-
+230'
°c
Symbol
Max
Unit
ROJC
75
°CIW
ROJA
200
°CIW
'Average Gate Po",",r, TA = 25°C
·Operating Junction Temperature Range
@
Rated
VRRM and VORM
·Storage Temperature__ ~ange
-Lead Solder Temperature
(Lead Length .. !i1S" from case. 10 s Max)
THERMAL CHARACTERISTICS
Characteristic
-Thermal Resistance, Junction to Case (2)
Thermal ReSistance, Junction to Ambient
(1 ) Ratings apply for zero or negative gete voltage. Device
ratings exclude having a
positive bias applied to the gete concurrently with a negative potantlal on the anode.
. Devices should not be tested with a constant current source for forward or reverse
blocking capability such that the voltage applied exceeds the reted blocking voltage.
(2) Thi. measurement 1. made with the case mounted "flat side down" on a hast sink
and held in position by means of a matal clamp over the curved surface •
• AnnularSemiconductor Patented by Motorola Inc.
"Indicates JEOEC Registered Data.
7-56
A
STYLE 10:
PIN I.
2.
3.
CATHODE
GATE
ANODE
r---IR
K
I
~
U{
SECT.A·A
~
~
MILLIMETERS
INCHES
MIN MAX MIN MAX
4.32
5.33 0.170 0.210
8
4.44
5.21 0.175 0.2 5
C
3.18
4.19 ·0.125 0.165
D
0.41
0.56 0.016 0.022
F
0.41
0.48 0.016 0.019
1.14
G
1.40 0.045 0.055
H
2.54
0.100
J
2.41
2.61 0.095 DelOS
K 12.10
0.500
L
6.35
0.2
N
2.03
2.92 0.080 0.115
P
2.92
0.115
3.43
R
.1
S
0.36
0.41 0.014 O.OJ§
All JEDEC ~imensions and notes applv.
DIM
A
CASE 29-02
TO-92
C
2N5060 thru 2N5064
ELECTRICAL CHARACTERISTICS (4) (TC· 2SoC unle.. otherwise notedl
Charamrlltie
·Peak Forward Blocking Voltage (Note 1)
(Tc z 12SOC, RGK= l0000hmsl
Symbol
Min
VORM
2N51l6O
2N5061
2N5062
2N5063
2N5064
30
60
100
150
200
-
-
SO
/"A
50
/"A
-
1.7
Volts
-
200
350
/"A
0.8
1.2
Volts
-
-
-
5.0
10
mA
-
-
3.0
0.2
-
-
tq
-
10
30
-
ps
dv/dt
-
300
-
Vips
·Peak Reverse Blocking Current
(Rated VRRM@TC= 125o C, RGK = l0000hmsl
"Forward "On" Voltege (Nota 21
(lTM= 1.2Apeak@TA= 250 C)
Gate Trigger Current (Continuous de) (Note 3)
"(Anode Voltogo = 7.0 Vdc, RL = 100 Ohms,
AGK= l0000hms)
'RRM
VTM
TC=250 C
TC = -sSOC
IGT
TC·250C
TC = -650 C
TC= 12SoC
VGT
-
Turn-On Time
Delay Time
Rise Time
(iGT= 1.0mA, RGK = 1.0 Ohm, Vo = Rated VORM
Forward Current = 1.0 A, dildt = 6.0 Alps)
,
-
Unit
Volts
-
IORM
TC= 250 C
TC = -65°C
-
Max
-
·Peak Forward Blocking Current
(Aated VORM@TC=12SOC,AGK= l0000hmsl
Gate Trigger Voltage (Continuous de)
"(Anode Voltege = 7.0 Vdc, RL = 100 Ohm.)
(Anode Voltage = Rated VORM, RL = 100 Ohm.)
Holding Current
"(Anode Voltege = 7.0 Vdc, initiating current = 20 mA
Typ
-
VGO
0.1
'H
-
-
-
/"s
fcI
tr
Turn-Off Time
(Forward Current = 1.0 A pulse, Pulse Width = 50 /"s, 0.1%
Duty Cycle, dildt = 6.0 Alps, dv/dt = 20 V Ips, IGT = 1.0 mA,
RGK = 1.0 k Ohm)
2N5060,2N5061
2N5062,5063,5064
Forward Voltage Application Rate
(Rated VORM, RGK = 1.0 k, Exponential)
·'ndicates JE DEC Registered Data.
2. Forward current applied for 1.0 ms maximum duration. duty
1. VCRM and VRRMfora11 typascan baapplied on a continuous
de basis without incurring damage. Ratings apply for zoro or
negatlv. gato voltage but positive gate voltago shall not be
applied concurrently with a negative potential on tho anode.
Whon checking forward or reverse blocking capability, thyristor devices should nat be tested with a constant current source
in 8 manner that the voltage applied exceeds the rated blocking
voltage.
cycle .. 1.0%.
3. RGK current is not included in measurement.
4. For electrical characteristics for G8te-to~athode resistance
other than 1000 ohms see Motorola Bulletin EB-30.
CURRENT DERATING
FIGURE 1 - MAXIMUM CASE TEMPERATURE
I;' 130
w
~ 120
~b
~ ~ ;::- r-
~w
.. 110
~ 100
SO
~
80
,
'\ ~ ~
1li
~
a '=
\.
"'
\
0:=
300
60
~
50
o
0_1
CONduCTIO~ ANG[EN_a
CASE MEASUREMENT
POINT - CENTER OF
-. -.......!:LAT PORTION
"
~
..... t'-...' ~
60·
""_ 10
i'"
.....
0.2
FIGURE 2 - MAXIMUM AMBIENT TENI'ERATURE
0.3
soci'.
120·
r---- ~
I':::
0.4
~O.
0.5
ITIAV), AVERAGE ON·STATE CURRENT lAMP)
IT(AV), AVERAGE ON-5TATE CURRENT (AMP)
7-57
•
2N5060 thru 2N5064
FIGURE 4 - MAXIMUM NON,REPETITIVE SURGE CURRENT
FIGURE 3 -TYPICAL FORWARD VOLTAGE
5.0
3.0
V
2.0
a:-
10
I./':
TJ= 125 0 C/
II
1.0
/~ V
~
'"
0.2
2.0
E
I
I I
1.0
1.0
II
o
~
z
3.0
'"~
""
to
:E
.'-'
~
~
w
'"
0.5
0.3
3.0
5.0
7.0
10
20
50
30
II
FIGURE 5 - POWER DISSIPATION
0.8
O. 1
.t::: 0.07
~
.=
hON-;jcto:~NGLEI
-'
I
1200 18~
60~
90 0
V/
/. // V
1/
/ / / ,0/ V/ V
./" ~c
0=
0.05
30 0
;I'
/. /~ ~
I
0.02
I
/'
/
/"
/: ~ ~ V
II
0.5
•
•
I
0.03
0.0 1
70 100
NUMBER OF CYCLES
z
:!
2.0
I
;!:
~
-
'"
250 C _ f--
Il!
:::>
~z
5.0
~
~ o. 7
~
7.0
0-
S
1/ V
i/
i
1.5
1.0
o
2.5
2.0
'T, INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)
"
~
o
0.1
0.2
04
0.3
0.5
ITIAV), AVERAGE ON-STATE CURRENT (AMP)
FIGURE 6 - THERMAL RESPONSE
1.0
w
li1
--
0.5
~
~.... 0
~~
~~
0.2
,D.
1
0-'"
~ ~ 0.05
--
t-"
in
z
~
0-
0.02
0.0 1
0.002
0.005
0.01
0.02
0.05
0.1
0.2
t, TIME (SECONDS)
7-58
0.5
1.0
2.0
5.0
10
20
2N5060 thru 2N5064
TYPICAL CHARACTERISTICS
FIGURE 7 - GATE TRIGGER VOLTAGE
0.8
~ D. 7
w
C>
<
':;
o O. 6
AK = 7.0 1V
RL=IOO'RGK= 1.0k_
I'..
>
g'"
J
"'" ""- r'-;
~
,
!.<
C>
ci
..........
O. 5
I-
r---
w
O. 4
~
10
a'"
5.0
ffi
-25
25
g
........
50
75
100
RL: 100..,::::::::::::
2N5062·S4
~
r--- 2N 506()'SI
2. 0
~
1.0
~
D.5
w
'1'0.
.--50
VAK-7.0V~
10 0
~ 50
'"o
~ 2O~
"- i'-..
---
:>
O. 3
-75
c
~
I-
w
a=
FIGURE B - GATE TRIGGER CURRENT
200
,;
!:E O.2
125
-75
-25
-50
TJ. JUNCTION TEMPERATURE (DC)
ffi
N
3.0
::;
<
~ 2.0
c
~
I-
1
AK = 7.0 v
RL-IUO RGK= 1.0k_
.......... ""
~ 1.0
'"z o. 8
C
%
100
125
ON STATE
BLOCKING
STATE
~+
----I
'--V
I
+V
I
I
A2N50S0,61
2N5062.s4'
O. S
0.4
-75
J--
£:.-::.I H
VRAM
..........
§
3
TYPICAL V - I CHARACTERISTICS
-V
---~ ~
~
75
50
FIGURE 10 - CHARACTERISTICS AND SYMBOLS
J
'-
25
Tj,JUNCTION TEMPERATURE (DC)
FIGURE 9 - HOLDING CURRENT
4.0
-
~
......
I
-
LOAD
~
I
-50
-25
25
&0
75
100
125
K
TJ,JUNCTION TEMPERATURE lOCI
7-59
•
2N5164
thru
2N5171
AO
~G
OK
SILICON CONTROLLED
RECITIFIER
20 AMPERES RMS
50-600 'VOLTS
REVERSE BLOCKING TRIODE THYRISTOR'
· _ . designed for industrial and consumer applications such as power
supplies, battery chargers, temperature, motor, light and welder
controls.
• Supplied in Either Pressfit or Stud Package
• High Surge Current Rating - ITSM = 240 Amp
• Low On-State Voltage - 1.2 V (Typ) @ ITM = 20 Amp
• Practical Level Triggering and Holding Characteristics 40 mA (Max) and 50 mA (Max) @TC= 2S o C
MAXIMUM RATINGS
Reting
• Peak Forward and 'Repetitive Rave ... Blocking
Voltage 111, 121
2N5164.2N5168
2N5165.2N5169
2N5166.2N5170
2N5167.2N5171
'Non-repetitive Peak Revar. Blocking Voltage
2N5164.2N5168
2N5165.2N5169
2N5166.2N5170
2N5167.2N5171
On-8tate Current RMS
Average On-State Current
(TC=6~C)
•
Circuit Fusing
(TJ = -40 to +100Dc. t ';;;8.3 ms)
'Peak Non-Repetitive Surge Current
(Ona evcle. 60 Hz. TJ = -40 to +100DC)
Preceded and followed by rated current
.
and voltage.
'Peak Gate Power
(Maximum Pulse Width· 101'1)
• Average Gate Power
'Peak Forward Gato Currant
(Maximum Pulse Width - 101'11
Peak Gata Voltage
·Operating Junction Temperature Range
'Storage Temperatura Range
Stud Torque
2N516B-2N5171
Symbol
Value
Unit
Volts
VORM'
or
VRRM
50
200
400
600
"1JFG
Volt.
VRSM
ITIRMS)
ITIAV)
75
300
500
700
20
13
I"t
235
.~
2N5164
2N5165
2N6168
2N5167
L
DI"~
~
1"
Amp
Amp
I
~
STYLE I:
l.eATHDDE
2. GATE
WE. ANODE
MILLIMEtERS
A"s
ITSM
240
Amp
PGM
5.0
Watts
PG(AVI
IGM
0.5
2.0
Watt
Amp
VGM
TJ
Tsig
10
-40 to +100
Volts
"c
wc
IDM
MAX
,
a
-40 to +150 .
30
Mil
12.73
1.40
CASE 31041
2N5168
2N5169
2N5170
2N5171
in. lb.
STYLE 1:
THERMAL CHARACTERISTICS
Plll.CATHODE
Characteristic
'Thermal Rellttance. Junction to ease
2N5164. 65. 68. 67
2N516B. 69. 70, 71
Symbol
Typ
M41x
1.0
1.1
1,5,
1.6
R6JC
I. BATE
'.AlDIE
Unit
':'CIW
EO
(11 VORM'or all ty_ can be applied on a continuous dc b..ls without Incurring dam_.
Rotlngs apply for zero or n......ve gato
De_I_should not be _
for blocking
capability In a mann.r IUch that tho vol_applied 8X_S tho rated blocking _01_.
(2)D..I... should not be operatad with a positive bl.. applied to tho geta concurrent with •
potontlal appl)ed to tho onodo.
_01_.
_Iva
,....
CASEZUG3
7-60
2N5164 thru 2N5171
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
·Peak Forward Blocking~Current
Symbol
Min
Max
Unit
loRM
-
5.0
mA
5.0
mA
(Vo = Rated VoRM @l T J = 100°C, gate open)
·Peak Reverse Blocking Current
IRRM
(VR = Rated VRRM @l T J = 100o e, gate open)
Gate Trigger Current (Continuous de) (2)
(Vo = 7.0 Vdc, RL 100 n)
*(Vo = 7.0 Vdc, RL 100 n, Te = -40o C)
IGT
=
=
Gate Trigger Voltage (Continuous de)
(Vo = 7.0 Vdc, gate open)
*(Vo = 7.0 Vdc, RL = 100 n, TC = -40o C)
*(Vo =Rated VoRM, RL = 100 n, TJ = 100°C'
VGT
Peak On·State Voltage (Pulse Width = 1.0 ms max, duty cycle <:;;1%)
(lTM=20A)
VTM
mA
~
40
-
75
Volts
-
1.5
2.5
0.2
-
-
1.5
-
50
Volts
*UTM = 41 A)
Holding Current
1Vo = 7.0 Vdc, gate open),
-
1.7
mA
IH
*(VO = 7.0 Vdc, gate open, TC = -40°C)
90
Typical
Gate Controlled Turn-On Time (td + t r )
j.ls
1.0
tgt
(lTM = 20 A, IGT = 40 mAde, Vo = Rated VoRM)
Circuit Com mutated Turn-Off Time
j.lS
tq
(lTM= 10A,IR= lOA)
20
IITM = 10 A,IR = 10 A, TJ = 100o C)
30
(Vo = VoRM = rated voltage)
(dv/dt = 30 V/j.ls)
Critica~
V/j.ls
50
dv/dt
Rate of Rise of Off-State Voltage
(Vo = Rated VoRM, Exponential Wave Form, Gate open, T J = 1000 C)
·Indicates JEDEC registered data.
EFFECT OF TEMPERATURE UPON TYPICAL TRIGGER CHARACTERISTICS
FIGURE 2 - GATE TRIGGER VOLTAGE
FIGURE 1 - GATE TRIGGER CURRENT
20
"
:;c
~
10
r
1.0
OJF.STJE VOJAGE = \ V-
~o
I
::.
.............
...........
~ 0.8
~
......
~ 1.0
...........
~
co
.............
co
..........
~ 5.0
...........
~ 0.7
.......
to
"'....
....
........
g 0.6
"'
r-....
.............
f'....
....
~
w
<
to
~. 3.0
r
OFF-STATE VOLTAGE = 7 V -
0.9
l'--..
0.5
t;- 0.4
.P
>
2. 0
-60
-40
-20
0
20
4D
60
BO
100
120
140
TJ, JUNCTION TEMPERATURE lOCI
0.3
-60
-40
-20
20
40
60
BO
TJ, JUNCTION TEMPERATURE IOC)
7-61
100
120
140
2N5164 thru 2N5171
MAXIMUM ALLOWABLE NON-REPETITIVE SURGE CURRENT
FIGURE 4 - SUB·CYClE SURGES
FIGURE 3 - 60 Hz SURGES
240
22 0
1"'-
,.
ii: 200
T~
I
l'-
~
--
, .... 1"-
so0
II
pllOR
SJRG1E
SCR OPERATED AT
RATED LOAD CONDITIONS
TJ = ·40·C to '100o C
f = 60 MHz
£' 40
~
....
w
140
12 0
~
E
w
r.......
~
~
~ 300
"-
160
'"
~
L~oLLI
~
§ 180
a'"
O~
f \
I-
10 0
~
"'-
~
"
""'"
w
~ 200
1'-:--.,
12, =23S A2,
'"
o
V
'"~
"-
.
r--.
1 CYCLE..j
80
o
1.0.
4.0
2.0
6.0 8.0 10
40
20
NUMBER OF CYCLES
100
1.0
60 80100
FIGURE 5 - GATE TRIGGER
CHARACTERISTICS
•
2.0
0.7
~
O.S
....
ii:
13
w
0.1
!E
O.OS
10
f'-.-. r--.....
~ 7.0
2.0
-60
MAXIMUM ALLOWABLE FORWARD
GATE VOLTAGE VGM = 10 VOLTS
0.00010tt1ll--.---.,--,,--r,:;;;;"'..,,--r'-'--1I.---i
rr--::===
=---,
U
U
U
~
M
,
I
o
40 mA GATE CURRENT REQUIRED
TO TRIGGER ALL UNITS@TJ=2Soc
Ul~
OJF-5TJE V O L L I
I
'":~ 3.0
L __ , _____ _
0.02
I
§
ALL UNITS WILL TRIGGER AT ANY VOLTAGE
AND CURRENT WITHiN THIS AREA
Hc = 2S oC, VAK = 7.0 VI
0.03
10
:--..
~ 5.0
I
I
7.0
........
13
0.2
....
6.0
i'l'i
RECOMMENDED TRIGGER
CURRENT
;; 0.07
3.0
PU LSE WIDTH 1m,)
20
GATE CURRENT
j
I
1.0
FIGURE 6 - EFFECT OF TEMPERATURE ON
TYPICAL HalOING CURRENT
rr---,r--""- MAXIMUM ALLOWABLE FORWARD
~ 0.3
l.S
~
U
U
10
VG, GATE VOLTAGE (VOLTS)
7-62
-40
-20
0
20
40
60
80
. TJ, JUNCTION TEMPERATURE 10C)
100
120
140
2N5164 thru 2N5171
DERATING AND DISSIPATION FOR RESISTIVE AND INDUCTIVE
LOADS (f = 60 to 400 Hz, SINE WAVE)
FIGURE 7 - AVERAGE CURRENT DERATING
FIGURE 8 - DN-STATE POWER DISSIPATION
24
a:
3!
w
'"~
~
90 I---I\:--''It''~''''';;:-+--+--+
1800
cii)2 0
/,/V
~I=
~
ai
~~
:;; 80 I---t--+-.,....---'''d-~-+~-&-
u.Z
wei
3
a:
900
16
V~ ~
·=O/.r& V
~O
~~ 12
~
win
~
>'"
~c
~ 701---t--4--~-~--+-~~~~~~-~~
«
4.0
6.0
8.0
10
12
16
14
18
~~
'>
i
'"....U
2.0
8.0
4.0
2.0
(l
-
--1.~
I I I I
4.0
ITIAV). AVERAGE ON·STATE CURRENT lAMP)
k"
a = CONDUCTION ANGLE -
~
o~
o
20
/'
/'
6.0
8.0
10
11
14
16
18
20
InA V). AVERAGE ON·STATE CURRENT lAMP)
FIGURE 9 - ON·STATE CHARACTERISTICS
_ 250
~ 200
:!
~
100
~ 70
a
w
~
~
ffi
Z
;:
Z
~
50
30
TYP\~AL
.r./'
//
//
--/"
---
--
20
10
7. 0
5.0
MAXIMUM
-
- TJ =100 0c
TJ =250C
3. 0
2.0
;;E
.~ 1. 0
0.15
I
I
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.75
"J.INSTANTANEOUS ON·STATE VOLTAGE IVOLT~)
FIGURE 11 - MOUNTING DETAILS FOR
PRESSFIT THYRISTORS
FIGURE 10 - TYPICAL THERMAL
RESISTANCE OF PLATES
400
'"
w
5200
;;E
~
~ 100
d
e
\
""
T
'"in
~
0:
'" '"
air. (Heat sink area is twica
20 r-area of ona side.l)
10
1.0
1.5
2.0
3.0
5.0
R8SA. THERMAL RESISTANCE 10CIWI
7.0
r,WT
'*'
-l
I-
Heat Sink Mounting
1
~0
Jntimat~
'"
.01 Nom
Di••
Rivet
or- :~c~~:g~at~I~~I~~~~~.at
r - sinks held venically in still
Ur-·01Nom.
-F==J / H"t Sink
~
C@%W'#/WA
.24
~« of-- Units mounted in center of
Z
~
.501
-.1: 505
I"
Chamfer
~
Contact Area
Additional
/ ' Heat Sink Plate
v~4'&
Complete 'ThinChassis
Knurl Contact
Area
Thin·Chassis Mounting
10
The hole edge must be chamfered as shown to prevent shearing
off the knurled edge of the rectifier during press-in. The pressing
force should be applied evenly on the shoulder ring to avoid tilting
. or canting of the rectifier case in the hole during the pressing operation. Also, the use of a thermal joint compound will be of considerable aid. The pressing force will vary frQm 250 to 1000
pounds, depending upon the heat sink material. Recommer1ded
hardnesses are: copper - less than 50 on the Rockwell F scale;
aluminum - less than 65 on the Brinell scale. A heat sink as thin
as 1/8" may be used, but the interface thermal resistance will increase in proportion to the reduction of contact area. A thin
chassis requires the addition of a back-up plate.
7-63
2N5431
SILICON ANNULARt UNIJUNCTION TRANSISTORS
PN UNIJUNCTION
TRANSISTORS
· . . characterized primarily for low interbase·voltage operation
in sensing, pulse triggering, and timjng circuits.
• Low RBB Spread - 6.0 to B.5 kfl
• Low Peak·Point Current - Ip = 4.0 J.lA (Max) @ VB2B1 = 4.0 V
• Low Emitter Saturation Voltage - VEB 1(sat) =3.0 V (Max)
• Narrow Intrinsic Standoff Ratio -1'/ = 0.72 to O.BO
MAXIMUM RATINGS (T A = 25°C unle.. otherwise noted)
Rating
Symbol
Value
Unit
PO"
Ie
300
50
1.5
30
35
-65 to +125
-65 to +200
mW
RMS Power Dissipation·
RMS Emitter Current
Peak~Pulse Emitter Currant··
ie••
Emitter Reverse Voltage
VB2E
VB2Bl*
TJ
Tstg
Interb.se Voltage*
Operating Junction Temperatura Range
Storage Temperature Range
I'l~
rnA
A
V
V
°c
°c
SEATING
·Derate 3.0 mW/oC increase in ambient temperature.
"Duty Cycle .. 1.0%. PRR = 10 PPS (see figure 51.
etBased upon power dissipation .t T A = 25°C.
•
FIGURE 1 - UNIJUNCTION TRANSISTOR
SYMBOL AND NOMENCLATURE
K
~
-11-0
FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES
NOTE:
1. PIN 3 CONNECTED TO CASE.
CUTOFF
REGION
STYLE 1:
PIN 1. EMITTER
2. BASE 1
3. BASE 2
DIM
A
E
B,
B
VB2Bl
C
VEB1Isat)
0
G
H
J
Vv
K
~~------~-----L-IE
Ip
IV
lEO
M
N
MILLIMETERS
MIN MAX
5.31 5.84
4.52 4.95
4.32 5.33
0.41 0.48
2.54 TYP
0.91 1.11
0.11 1.22
12.70
45 0 TYP
1.27 TYP
INCHES
MIN MAX
0.209 0.230
0.118 0.195
0.170 1.210
0.016 0.019
0.100TYP
0.036 0.046
0.028 0.048
0.500
45 0 TYP
0.050 TYP
CASE 22A
(TO-1S Outline
Except for Lead Position)
7-64
2N5431
ELECTRICAL CHARACTERISTICS (TA ~ 2SoC unl ... oth.rwi.. notod)
Char_istic
Intrinsic Stondoff Ratio 1
(VB2Bl = 10 V)
Intorbase R.sistance
(VB2Bl ~ 3.0 V.IE - 0)
Int.rbase R.sist.nce T.mp.r.tura Co.fficl.nt
(VB2Bl = 3.0 V. IE = 0, TA = 0 to l000 C)
Emitter Saturation Voltage 2
(VB2Bl -10 V,IE = SOmA)
Modul.t.d Intorbase Curr.nt
(VB2Bl = 10 V, IE = 50 mAl
Emitter Reverse Current
(VB2E = 30 V, IBI = 0)
Peak·Point Emitter Current
(VB2Bl = 25 V)
(VB2Bl = 4.0 V)
Vall.Y'Point Curr.nt 2
(VB281 = 20 V, RB2 = 100 ohm.)
B•••'One P~ak Pulse Voltage
(VBB = 4.0 volu)
Fig. No.
4
Symbol
Min
Max
0.72
0.80
Unit
-
'I
kn
RBB
6.0
B.5
0.4
0.8
-
3.0
5.0
30
-
10
-
0.4
4.0
%/DC
QRBB
VEB1(s.d
V
mA
IB2(mod)
IEB20
Ip
nA
IlA
mA
IV
3
-
2.0
1.0
V081
-
V
1 'I, Intrinsic st.ndoff ratio, Is defin.d in tarms of the p.ak-point volt.ge, Vp by me.ns of the .quation: Vp = '1VB2Bl +VF wh.re VF is
about 0.45 volt at 250 C CiilIF = 10 IlA .nd d.cr..... with temp.ratura.t .bout'2.S mVjDC. Th. test circuit is .hown In Figure Compon.nu
Rl, Cl, .nd the UJT form. rel.x.tion o.cill.tor; the r.maining circuitry s.rves as a pa.k.yoltage d.t.ctor. Th. forward drop of Diode 01
compensates for VF To use,. the "ca'" button is pushed, and R3 is adjusted to make the current meter, M1 read full scale. When the "ca'"
button is released, th~ value of ." is read directly from the meter, if full scale on the meter reads 1.0.
'
4:
2 Use pulse technique~; PW
Pt#
300 Jl.s, Dutv Cvcle '" 2.0% to avoid internal heating, which may result in erroneous readings.
FIGURE 3 - VOSI TEST CIRCUIT
\/1
r-----~~----~
+20 V
Rl
RB2
10kn
lOOn
DUTY CYCLE .. 1.0%, PRR .. 10 PPS
tl0v
O------~------._----~
0.15
Rl
10kn
CAL'1
--Efl
•
FIGURE 5 - PRR TEST CIRCUIT
AND WAVEFORM
FIGURE 4 - 'I TEST CIRCUIT
~=t==::J:======:t.--..f=
CURRENT WAVEFORM THRU Rl
910 kn
VOBl
RBl
20n
20·30 V
(Adj ust for 1.5 A
peak in Ril
151lF
to,. diode with the following characteristics:
VF = 0.49 V @ IF = 10 IlA
IR .. 2.0 IlA @ VR = 20 V
7-65
-=
Rl
O.ln
•
2N5441 thru 2N5446
MAC40688 thru
MAC40690
MT20
~G OMTl
TRIACS
SILICON alDIRECTIONAL TRIODE THYRISl'ORS
't
40 AMPERES RMI
200-600 VOLTS
MAC40688 ,thOU MAC40890
Q
· .. design!!d primarilv for industrial and militarv applications for the
control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power
switching systems; or wherever full,wave, silicon gate controlled
solid·state devices are needed.
STYLE 2:
1. lIT 1
2. GATE
3. MT2
'I
"-I
.' Glass Passivated Junctions and Center Gate Fire
•
•
.... ...••,, ...•
....
- ,
....
IIILLIIlET£RS
Isolated Stud ~or Ease of Assemblv
Gate Triggering Guaranteed In All .. Quadrants
DIM
•
"
,"•
•
,,
'2.13
-
,.G
2.4,
2.01
11.58
~"
,... ,.,
IAI
2.1'
T
-
3.43
IlIJ03 0'"
0.420 0
0
D.3I5
0....
0.'35
•
0.
0'50
CASE 311:01
MAXIMUM RATINGS
Rating
"Peak Repetitive Off-S_ Voltage
(TJ a -65 to +110"C)
1/2 Sine WIN8 50 to 60 Hz, Gate Open
"Peek Princlplll Voltage
2N5441, 2N5444, MAC40688
2N5442, 2N5445, MAC40689
2N5443, 2N5448, MAC40690
"RMS Dn-Stl118 Current
(TC pIIr Fig. 2~
(TC - +100"C)
Full Sine Wove, 50 to 60 Hz
"P.. k Non-Repetldve Surge Current
(One full Cvcle of surge current at 60 Hz.'
pl'8Clllded end followed by .40 A RMS current.
TJ • +11O"C)
"Peek Gate Power
(Pulse Width· 10 p. Max)
"A-.geGataPower
"Peek Gota Current (10 ps Max)
"P..k Gate Voltage
"Operating Junction Templlfllture Range
"Storage Templlfature Range
"Stud Torqua
I.,
...... .... .,
,."
'.12
L
IICHU
Symbol
Vilul
VDRM
Unit
Volts
2N5444 thou 2N5448
STYLE 2:
PINt IITI
2. GAT£
3. lIT 2
200
400
600
Amp
IT(RMS)
DIM
20
ITSM
300
•
Amp'
f
",
•
.... .... ....
55' •
_UIMERRI
••
.,
• ,'-"
40
'
. ,...
D.614
,~
2.28 REf
15.75 17
L
'ICMIS
'UG
1.1150 .1.190
.13
..50
IU8CIREF
0
,,
'5CASE
0' ....283-03
.1
PGM
PGIAV)
IGM
VGM
TJ
TIbI
THERMAL CHARACTERISTICS
C,*-lItio
Symbol
"Thermal Resistance, Junction to Case
RUC
2N5441, 2N~2, 2N5443
2N5444, 2N5445, 2N5448
MAC4OII88 MAC40689 MAC40690
"I ndicates JE DEC Rogoatarad Data for 2N5441 thru 2N5448.
40 .
Watts
0.75
4.0
30
-65 to +110
-65 to +150
30
Watt
Amp
Volt.
Mix
Unit
uc/w
0.8
0.9
1.0
12.73
T
2N5441 thru 2N5443
stYU2:
1. liT 1
2. DATE
CASE. tIl2
°c
Dc
In. lb.
DIM
MlLL_TEU
_
MAX
17312.13
,
1
UD
~
111
"2.11
CASE 310-01
7-66'
G
2N5441 thru 2N5446, MAC40688 thru MAC40690
ELECTRICAL CHARACTERISTICS ITc = 250 C and either polarity of MT2 to MTl voltage, unless otherwise noted.1
Typ
Max
Unit
IDRM
-
0.5
4.0
rnA
VTM
-
1.65
1.85
Volts
Symbol
Characteri~1ic
·Peak On..state VoltilglJ
Rated VDRM @TJ = 110Dc
"Peak On·State Voltage
ITM = 56 A Pea~, Pulse Width';; 1.0 ms, Duty Cycle';; 2.0%
Gate Trigger Current (1)
Main Terminal Voltage = 12 Vdc, RL·~ 500hms
-Holding Current
Main Terminal Voltage = 12 Vdc, Gate Open
Initiating Current = 150 rnA
-
-
70
70
70
100
125
240
_.
-
-
2.0
2.0
2.0
2.5
3.4
-
Volts
VGT
-
0.2
-
-
rnA
IH
-
TC = 250 C
'TC = -65°C
4tTurn..()n Time
Main Terminal Voltage = Rated VDRM,ITM = 56 A,
Gate Source Voltage = 12 V, RS = 12 Ohms, Rise Time = 0.1 ItS,
Pulse Width = 2.0 ItS
Rate~
mA
IGT
MT21+I.GI+1
MT21+I,GH
MT2 I-I. GI-I
MT2 I-I, GI+I
*MT2 1+1, GI+I; MT2 H, G I-ITC = -65°C
"MT21+I, GH; MT2 I-I, GI+I TC = -65°C
·Gate Trigger Voltage
Main Terminal Voltage = 12 Vdc, RL = 50 Ohms
MT2 1+1, GI+I
MT21+I,GH
MT2H,GH
MT2H,GI+I
• All Quadrants, T C = -6SoCI
"Main Terminal Vol~ge = Rated VDRM ~ R L = 10 k ohms, TJ = +110o C
·Critical
Min
-Rise of Commutation Voltage
-
-
70
-
100
2.0
1.0
Igt
dv/dtlcl
Rated VDRM,ITM = 40 A, Commutating
di/dt = 22 Alms, gate energized
TC = 70°C 2N5441 , 2N5442, 2N5443
= 65°C 2N5444, 2N5445, 2N5446
=6oDc MAC4Q688, MAC40689, MAC40690
V/"s
5.0
5.0
5.0
GritieaJ Rate of Rise of Off State Voltage
dv/dt
Rated VDRM, Exponential Voltage Rise,
Gate Opon, T C = IloDc
2N5441 , 2N5444, MAC40688
2N5442, 2N5445, MAC40689
2N5443.2N5446, MAC40690
7-67
30
30
30
VII"
50
30
20
"I ndic.tes JEDEC Registered Data for 2N5441 thru 2N5446.
I'S
•
2N5441 thru 2N5446, MAC40688 thru MAC40690
FIGURE 2 - RMS CURRENT DERATING
FIGURE 1 - ON-8TATE POWER DISSIPATION
i
z
0
50
0
'"\l:
!2
'"..
..S
w
CUR~ENTJAVEFOIRM = SINUSOIbAL
120
30
,~'--90 01_,--~ ~,~
x ....
0
;!1~
..
1.3
I
~
-- -
!:;
0
> 1. 1......;;: to-
'"w
'"
to
.."''"
.9
"""-
I-
w
.7
;;.
.5
I-
•
r--
QUAD RANTS
.3
-liD
t
\
-40
I
~
~ ,£ 17"000 ~
">
I
2 i-"""
,/
3
4'
/'
/'
-20
20
--
~
40
----
g
80
100
~
..........
~
I-
w
~
'"
--.::
120
..... r--..
~~
20
"'
"""-
~ 10
I"-
60
30
ffi
-s::::
........
1 50
~
~
=01 +0111
FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
r-..
~~
STUDTYPES-~
CONDUCTION ANGLE
70
OFF-STATE VOLTAGE = 12 V -
:-.
r--ISOLATEDt----'~"""'i---t--...-..,
ITlRMS). RMS ON·STATE CURRENT lAMP)
FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE
1.7
...... STUDTYPES
.,,~
/3600
V
~~
~
--
500~-~~10~~~~20~~-~30~~--~40~~--'5~0
40
10
20
30
ITIRMS). FULL CYCLE RMS ON·STATE CURRENT lAMP)
,.PRESS·FIT TYPES
OIlll-~.:::!11_...:::-+-.,.f-+-+-_1
1800~
0
o
~
w
,
~ 5 70
ffi
1.5
IT'I...............
~ ffi~
'"
20
~
0
-+--+---+---+---1
~~110~~~-f--~.......,f-.......,f-.......,f-.......,f-.......,~.......,---l
> 10
to
LOAD = RESISTIVE OR INDUCTIVE
CONDUCTION ANG~E = 3600
~""""""Ff':'---l---t---+-;;I-'-,;F----1 .. - --........:.J
~~ 100~-~-~1~~~.......,f_.......,f_.......,f_.......,f_.......,f_.......,-__l
40
~
iii
1~r--,--~--.---.--,---r---r--._--.__,
CURRENT WAVEFORM =SINUSOIDAL
LOAD = RESISTIVE OR INDUCTIVE -+-.......,f_-+~-;/
QUADRANT~
7.0
-liD
140
-40
I
OF~-STAT~ VOL~AGE = \2 V-
r--..... .......
.......
f""::: ~
p........,
W
H'Y
4-
20
40
60
80
T.I,JUNCTION TEMPERATURE 10C)
-20
Tj.JUNCTIDN TEMPERATURE 10C)
.....
~ ~........ ..........
i'-.....
I . . . . r--..... ~ ~
100
120
140
FIGURE 5 - TYPICAL THERMAL RESPONSE
1.0
....
0.7
..
0.5
ilL
PRESSFIT PACKAGE
~~ 0.3
I-N
,.....
~~ 0.2
w'"
;;;=
....... ~
~~ O. 1
"'~~ 0.01
:--rr;;-D PACKAGE AND ISOLATED STUD PACKAGE
.-,.....
~ ~ 0.05
"""
~ f3 0.03
:t=
Z8Jfltl
0.02
0.0 1
0.05
i ,Ii) i ~61~
·IJI
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t. TIME 1m.)
7-68
50
100
200
500
1k
2k
5k
2N5441 thru 2N5446, MAC40688 thru MAC40690
FIGURE 6 - ON-sTATE CHARACTERISTICS
0
FIGURE 7 - TYPICAL HOLDING CURRENT
30
R
"
0
_20
<
....
~
a:
al0
'"
z
~
Ii
0
~
I"t'.........
oS
0
~
GATE OPEN
H
0
1. 0
L
..I'
1.0
'"~ 5.0
MAIN TERMINAL #1 POSITIVE
.....::: i:'-"
['"'00,
"'-
......
r- TIN Tj"MIN1 :z PjSITIVEI
~
....
~ 5.0
a:
w
II
....
t"
...
3. 0
~o
:::0
u
......
"'- ......
-40
-20
20
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE (DC)
3.0
~
~ 2. 0
c
FIGURE 8 - MAXIMUM ALLOWABLE SURGE CURRENT
'"
:::0
ffi
z
;::
z
<
500
1. 0
~
In 0.7
~
.~
ffia:
0.5
a:
~
o.3
300 .........
200
r--. t'--
w
>
TJ = -65 '0 1100 C
f= 60 Hz
r-
~
o.2
r----. f""-
w
z
:
<
100
~
~
.1
7
MO
f"
M M
U
U
~ U U U il
VTM. MAXIMUM INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)
0
7
50
U
1.0
2.0
5.0
7.0
10
20
NUMBER OF FULL CYCLES
7-69
50
70
100
•
2N5567 thru 2N5570
T4101M, T4111M
T4121 series
MT20~MTt
TRIACS
10 AMPERES RMS
2OO-eoo VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and military applications for the
fUliwave control of ac loads in applications such as light dimmers,
power supplies, heating controls, motor controls, welding equipment
and power switching systems.
• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud and Isolated Stud Packages
• Gate Triggering Guaranteed In All 4 Quadrants
2N5567
2N5568
T4101M
MIlliMETERS
DIM MIN MAl(
A 1213
I
1111
C
839
f
254
F
089
J
204
K
•o
MAXIMUM RATINGS
Rating
•
VOAM
"Peak Gate Voltage
*RMS On-State Current
T C = -6S 10 +8SoC
TC = +9o"C
(Full cvcle, Sine Wave. 50 to 60 Hz)
·Peak Non.Repetitive Surge Current
(One Full cycle of surge current at 60 Hz,
preceeded and followed by rated current,
TC = 85°C)
Circuit Fusing Considerations
(T C = -65 to +850 C. t = 1.0 to 8.3 m,)
VGM
"(T C = BSoC, Pulse Width = 1.0 ",)
·Average Gate Power
(T C = BSoC. Pulse Width = 8.3 ms)
·Operating Junction Temperature Range
·Storage Temperature Range
Stud Torque
2 MAIN TERMINAL 1
3 MAIN TERMINAL 2
CASE 17403
Svmbol
·Peak Repetitive Off·State Voltage
(TJ = -6510 +1000C)
1/2 Sine WINe 50 to 60 Hz, Gale Open
2N5557, 2N5569. T41219
2N5568, 2NS570, T41210
T4101M,T4111M,T4121M
Peak Gate Power
STYLE 3
TERM 1 GATE
~_
Value
Unit
Volts
2N5569
2N5570
T4111M
200
400
600
20
ITiAMS)
L
c.··'!
.'r
Volts
Amp
10
6.7
,
MILLIMETERS
DIM MIN MAX
ITSM
100
Amp
121
40
A2,
PGM
16
Watts
PG(AV)
O.S
Watt
TJ
T,tg
-65 to +100
-65 to +150
°c
°c
30
in. lb.
A !!l34 I!1S0
I
1400 1420
C0102413
F
089 216
H
229 REF
J
106111SS
It
918 1054
L
699 115
Q
16!1 406
R
I 611 REF
T
1210 12.83
STYlEJ
TERM 1 MAIN TERMINAL'
Z GATE
STUD MAtN TERMINAL 2
CASE 175·02
" --.
DmJ
•
1
G
R1t~
I L~'
2
Chlr.ct_istic
"'Thermal Resistance, Junction to Case
Stud and P....sfit
Isolated Stud
INCHES
MIN MAX
DIM
Symbol
Max
AOJC
1.0
1.1
"Indicates JEDEC Registered Data.
Unit
°CIW
A
,
I
1213
f
G
H
J
It
165
l
2.16
1061
9.18
699
•• '4•8
R
152
T
.19
05510559
0501 UOS
1.030
01165 0.160
0255
P.0850095
0420 Q.4S5
0315 0415
02150305
0.2550215
0.15 DIY
0060 0010
OOlS Don
CASE 235-02
7-70
~.
i
-
1.•
_
C
THERMAL CHARACTERISTICS
N
1I.28UN".
__ -
STYLE 2
PIN 1. MAIN TERMINAL 1
2. GATE
3. HlAIN TERMINAL 2
STUD ISOLATED
2N5567 thru 2N5570, T4101M,
ELECTRICAL CHARACTERISTICS (TC
= 25°C
T4111M~
and Either Polarity of MT2 to MTI Voltage unle•• otherwi.e noted I
Characterist ic
·Peak Blocking Current
Vo = Rated VORM@TC = 100°C
·Peak On-State Voltage
'TM = 14.2 A Peak, Pulse W,dth = 1.0 to 2.0 ms, Duty Cycl.';;;2.0%
Gate Trigger Current, Pulse Width ~ 50 IlS (11
Vo = 12 Vdc, RL = 12 Ohms
MT2 (+1. G 1+1: MT2 (-I, G (-I
MT2 1+1, G (-I: MT2 1-1, G 1+1
'MT21+I, G (+1: MT21-1. G I-I, TC = -65°C
·MT21+1. G (-I: MT21-1, G (+1. TC = -65°C
Gate Trigger Voltage, ContInuous de (All Quadrants)
Vo
= 12 Vdc, RL = 12 Ohms
Vo
= Rated VORM, RL = 125 n
TC
'TC
TC
T4121 series
Symbol
Min
Typ
Max
Unit
'ORM
-
-
2.0
mA
VTM
-
1.3
1.65
Volts
-
-
-
-
-
-
-
-
25
40
100
150
Volts
VGT
= 25°C
= _65°C
= 100°C
0.2
Holding Current
2.5
4.0
mA
'H
Vo ·12 Vdc, Gate Open
TC = 25°C
'TC = -65°C
-
-
30
200
-
1.0
2.5
-
Gate Controlled Turn-On Time
Vo = Rated VORM, 'TM = 15 A Peak,
IGT = 160 mA, RISe Time = 0.1 JJS, Pulse Width
MT2 1+1, G 1+1: MT2 I-I. G I-I
mA
'GT
tgt
JJS
= 2.0jJs
V/sss
dv/dtlcl
·Cntical Rate-of:Rise of Commutation Voltage
Vo = Rated VORM 'TM = 14.2 A Peak, Commutating
dl/dt == 5.4 Alms, g~te ~nenergized
TC = 85°C
10
2.0
VII's
dv/dt
Critical Rate-of-Rlse of Off-State Voltage
Vo = Rated VORM, Exponential Voltage Rise. Gate Open,
.
TC = 10oDc:
'2N5567, '2N5569, T4121B
*2N5568, *2N5570, T41210
T4101M, T4111M, T4121M
30
20
10
*' ndlcates JEDEC Registered Data.
I UAII Voltage polarity reference to main terminal 1.
7-71
150
100
75
-
2N5567thru 2N5570, T4101M, T4111M, T4121 series
~
FIGURE 1 - RMS CURRENT DERATING
(Isolated Stud,
100
w
"'"
'"
:>
<
~
96
ill
t-
F~LL
WivE SIN1USOIOL-- ,--WAVEFORM'
.
.......... r-...
....~
x
..
~
92
........
de
"'-.,.
88
~
-I.
~
2
0
4
6
0
8
1.0
I
./
./
I-'
./
".
'"~
o
1.2
>
ffi
'"'"
~
1.0
0.8
w
:;;:
CJ
0.6
-
'"
>'" 0.4
-60
J
I
-40
lol-'==F=t==t==t---t
10
IT(RMS). RMS ON-STATE CURRENT (AMP,
FIGURE 6 - TYPICAL GATE TRIGGER CURRENT
50
OFIF-STA~E VOdAGE: bV<
.§
j
............
1~
12
a'"
~
I 3-;"
I
tw
<
........
...:::::::=::
20
40
60
80
TJ. JUNCTION TEMPERATURE 1°C)
100
~
~-I'/
1----
7-72
2
~Ii:::
5.0
-60
140
..............
.........
'"~7.0
120
r.......: r........
...............
10
OFIF-STAAvOL+AGE: 112 V-
i'-.
.......
.......
20
........
t-......
'"w
'"'"0:
........
/ " -......;;: ~
..............
t-
/
"'" J..........
::::::=::::
30
il'l
dUAOR~NT4
............
-20
10
:;; 2.01--I-"""~iiI'I'::;"''''F-+--
4
r- QUADRANTS
9.0
~
,
"'"
B.O
7.0
~ 4.01---4--t-~~~;;.s"""7¥"-\t--I--t--l
~ 1.6
w
6.0
~
8.01--1--+--t-+
FIGURE 5 - TYPICAL GATE TRIGGER VOLTAGE
2: 1.4 ............
5.0
CONDUCTION ANGLE
IT(RMS). RMS ON-STATE CURRENT lAMP)
o
4.0
~ 6.01--1--f---+--+'''''''rl'::;.''5;-F-7''''l-:7''f--f--i
~ P""
2
•
3.0
~
.
..
.
TYPICAL
,/
......-: V
1.8
2.0
ffi>
'"
~ ;....--
......
12
>
./
MAXIMUM . /
V
./ V
..........
f\_i"t
14
~
/
V
r-........
FIGURE 4 - POWER OISSIPATION
IP,assfit and Stud)
16rr==I~~~==~--r--r--~~---r~
i
I
f-- ~:I~~~~~onIV
"'-.,.
ITIRMS). ON·STATE CURRENT (AMP)
FIGURE 3 - POWER DISSIPATION
(Isolated Stud'
I--- r--FULL WAVE SINUSOIDAL
"'" ""
........
5
10
ITIRMS,. RMS ON-STATE CURRENT lAMP)
........
•• CONDUCTION ANGLE
"'"
84
-
r--.,,"'" :--.,,": lBOo OR LESS
~ I'---
...... 1'..
{:l
-.....;::: ~
..........
:>
:i
....... ~
5
-- I---
T4121 serie$(lnly
w
~
FIGURE 2 - RMS CURRENT DERATING
IP,assfit and Stud.
100
-40
-20
........
....... r-......
.:::-- r........
~~
........
:::s
11
b: ~
.......
.........
0
20
40
60
80
TJ.JUNCTION TEMPERATURE 10C)
100
120
140
2N5567thru 2N5570, T4101M, T4111M, T4121 series
FIGURE 7 - ON-STATE CHARACTERISTICS
FIGURE 8 - TYPICAL HOLDING CURRENT
20
IUD
0
TJ' 250 C
0
Ii
;;:
ffi~
//
10
"-
1.0
'"
~ 5.0
§
o
::
"........
MAIN TERMINAL #1
POSITIVE
......
prSlTIvr
:!E- 3.0
I
2.0
-60
w
/
""-..
r--...
/ ..........
............
MAIN TERMINAL #Z
:::>
~ 7.0
~
10
GATE OPEN
u
1/
'"~
~
1
/V
/ ~OOC
3D
......... .......
..............
;'
50
a:
a:
.....
/
-40
-ZO
.........
I
ZO
40
60
BO
TJ.JUNCTION TEMPERATURE (OCI
5.0
i'.... ,...
"- ...
100
120 140
z
o
S 3.0
~
z
FIGURE 9 - MAXIMUM NON-REPETITIVE SURGE CURRENT
~ 2. 0
zoo
i
;;:
.~
'"~
1. 0
TJ=-LJoool
=
IZ
O. 7
;
100
O.5
w
70
;'1
~
'" 50
.3
it!
~
O. 2
1:" 30
-
O. 1
0
1.0
zo
4.0
3.0
2.0
.......
f
.......
"'-
current.
1Jg\1
z.o
1.0
3.0
60Hz
Surge IS preceded and
follDwed by rated
5.0}.o
~
10
20
....... ......
30
so
70 100
NUMBER OF CYCLES
ViM. INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)
•
FIGURE 10 - TYPICAL THERMAL RESPONSE
1.0
0.7
O. 5
~O
. / V"/900
K/
t".' ['-.. <"' ~ b.:
2
f=Fr:~'
5.0
-60
........
t'---.. r-......
1-"""'" ~ b,.
r-.......
.......
~ t
......
OFIF-sTAiE VOLiAGE =112 V-
r--......
r-.. '"
Or--..
'"'"
0;
....
......
3
~ 2
/
I
> 0.4
-60
;::..".
I/" ~
0.8
w
!;;:
~
JUADRiNT4
........
= 10QDC
9.01---t--+---+7'7"".:?1":7"":;>I
ffi
'"'"
~
i!!i
O+-5TA~E VOdAGE = \2 V-
~ 1.6
~
~.
• =CONDUCTION ANGLE
FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE
--
'"
..
'.....
"
~.r-
! ::t----It-----Ilr--
.......
14
18
~
......
"- -.......:
~ '-.....
21
ffi
•
/IS0 0
~.
SO
75
i
"'" 300
~ S5
'x~"
_ Nrr===~======'--'---,--~---'~~
~~
-40
-20
D
V
.....
........
20
40
60
SO
TJ, JUNCTION TEMPERATURE (OCI
100
120
140
2N5571 thru 2N5574, 2N6145 thru 2N6147, T4100M, T4110M,
FIGURE 6 - TYPICAL HOlOING CURRENT
FIGURE 5 - MAXIMUM ON.sTATE CHARACTERISTICS
20
100
70
..Y
TJ = 25°C
50
30
/.
100°C
/V
V
110
>-
iJi
~
V
20
a
I
GATE OPEN
~
f'--- r--....
7.0
"
/
I
.......
........
.........
I-....
.............
/
§
MAIN TERMINAL #2
prSITIV~
o
:z:
: ' 3.0
10
MAIN TERMINAL #1
POSITIVE
I'-..
~ 5.0
(f
~
.............
r--....
"...........
"""-
....
~
G
2.0
-60
7.0
5.0
w
3.0
~
2.0
II
1.0
I
o
z
:!z
100
120 140
200
~
~
-i510 .loool
>z
~
.Co
20
40
60
BO
TJ. JUNCTION TEMPERATURE (OC,
FIGURE 7 - MAXIMUM NON·REPETITIVE SURGE CURRENT
I
:il
,,;
-20
I
~
z
~
-40
I
0.7
TJ =
~ 100
0.5
a'"
II
w
~
""
0.3
~
o.2
O. 1
0.6 O.B
ill
r
,
1.0 1.2
1.4
1.6 1.B 2.0 - 2.2 2.4
2.6 2.B 3.0
.......
70
'" 50
30
t--
current.
IY\PI
20
1.0
3.2 3.4
f =60Hz
Surge is preceded and
followed by rated
2.0
3.0
VfM. MAXIMUM INSTANTANEOUS ON-5TATE VOLTAGE (VOLTS'
5.0 7.0
...............
10
....... ........
20
30
50
70 100
NUMBER OF CYCLES
•
FIGURE 8 - TYPICAL THERMAL RESPONSE
1.0
0.7
0.5
PRESSFIT PACKAGE
-'0
-0
~~ O. 1
-
~~ 0.07
~~ 0.05
:g~
0.03
ZOJfh'i
0.0 2
III I
0.0 1
0.05
'(I' i ~Oll
0.1
0.2
0.5
1.0
2.0
5.0
10
20
I. TIME (m.)
7-77
50
100
200
500
lk
2k
5k
2N6027
2N6028
PROGRAMMABLE UNIJUNCTION
TRANSISTORS
40 VOLTS
375mW
SILICON PROGRAMMABLE
UNIJUNCTION TRANSISTORS
..
..
· .. designed to enable the engineer to program unijunction char·
acteristics such as RBB.fI. IV. and Ip by merely selecting two resistor
values. Application includes thyristor·trigger. oscillator. pulse and
timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high·volume requirements. this
package is readily adaptable for use in automatic insertion equipment.
A
•
• Low On· State Voltage - 1.5 VoltsMaximum@IF = 50 mA
• Low Gate to Anode Leakage Current - 10 nA Maximum
• ,High Peak Output Voltage - 11 Volts Typical
• Low Offset Voltage - 0.35 Volt Typical (RG = 10 k ohms)
Programmable - RBB.fI. IV and Ip.
K
t---j-B
I
SEATlNGP~i-.-~'~~~;._1t
PLANE F
•
rA
I
)
L
. __ .J_
K
___ J.
., r
D-=:IjU
Rating
·Power Dissipation
Derate Above 25°C
Symbol
Value
Unit
PF
1/8JA
300
4.0
mW
mW/oC
-DC forward Anode Current
Derate Above 2SoC
IT
150
2.67
mAo
rnA/oC
• DC Gate Current
IG
±50
mA
1.0
2,0
Amp
Amp
5.0
Amp
Repetitive Peak Forward Current
100 ~s Pulse Wid/h. 1.0% Duty Cycle
*20 liS Pulse Width, 1.0% Duty Cycle
ITRM
Non-Repetitive Peak Forward Current
lOllS Pulse Width
ITSM
* Gate to Cathode Forward Voltage
VGKF
40
Volt
• Gate to Cathode Reverse Voltage
VGKR
Volt
Gate to Anode Reverse Voltage
VGAR
-5.0
40
VAK
±40
Volt
TJ
-50 to +100
T stg
-55 to +150
°c
°c
flo
0
.::J J ~G.
MAXIMUM RATINGS
"Anode to Cathode Voltage (1)
Operating Junction Temperature Range
... Storage Temperature Range
Voll
• Indicates JEDEC Registered Data
SECT. A·A
1:~~I:~t'Jrc
2:>J
~
N ......
3. CATHODE
MILLIMETERS
MIN MAX
4.32
5.33
4.44
5.21
3.18
4.19
0.41
0,5S
0.41
0.48
1.14
1.40
2.54
2.41
2.S7
12.70
6.35
2.03
2.92
2.92
3.43
0.3S
0.41
INCHES
MIN MAX
0.170 0.210
0.175 0.205
0.125 o ISS
D
O.OIS 0.022
F
O.OIS 0.019
G
0.045 0.055
H
DIDO
J
0095 0.105
K
0.500
L
0.250
N
0.080 0.115
P
0.115
R
.135
S
0.014 O.OIS
All JEDEC dimensions and notes apply.
DIM
A
B
-*-
-
-
·TO·92
=
PLASTIC
7-78
N
~1-
STYLE 16:
PIN 1. ANODE
2. GATE
CASE 29·02
(1) Anode positive, RGK "" 1000 ohms
Anode negative. AG K
open
~
,
-
2N6027,2N6028
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
"Peak Current
(VS: 10 Vdc, RG : 1.0 Mlll
Figure
Symbol
2,9,11
Ip
Min
Typ
Max
-
1.25
0.08
2,0
0.15
4.0
0.70
5.0
1.0
2NS027
2NS028
0.2
0.2
0.70
0.50
I.S
O.S
(Both Types)
0.2
0.35
O.S
2NS027
2NS028
-
18
18
50
25
2NS027
2N6028
70
25
270
270
-
2NS027
2N6028
1.5
1.0
-
2NS027
2NS028
(VS: 10 Vdc, RG: 10 k ohm,!
2NS027
2NS028
1
.. Offset Voltage
(VS: 10 Vdc, RG: 1.0 Mn!
(VS: 10 Vdc, RG: 10 k ohm,l
·Valley. Current
(VS = 10 Vdc, RG = 1.0 Mil)
1,4,5,
(VS = 10 Vdc, RG = 10 k ohms)
(VS = 10 Vdc, RG = 200 Ohms)
.. Gate to Anode Leak'age Current
(VS : 40 Vdc, T A = 25°C, Cathode Open!
(VS : 40 Vdc, T A = 75°C, Cathode Open)
Unit
JJA
Volts
VT
JJA
IV
-
mA
nAdc
'GAO
1.0
3.0
10
-
5.0
50
-
-
-
'GKS
• Forward Voltage IIF:: 50 rnA Peak)
I,S
VF
-
08
1.5
Volts
.. Peak Output Voltage
(VB: 20 Vdc, Cc : 0.2 JJF)
3,7
Vo
S.O
11
-
Volts
3
tr
-
40
80
ns
Gate to Cathode Leakage Current
(VS : 40 Vdc, Anode to Cathode Shorted)
Pulse Voltage Rise Time
(VB = 20 Vdc, Cc = 0.2 JJF)
nAdc
Indicates JEDEC Registered Data
FIGURE 1 - ELECTRICAL CHARACTERIZATION
~
+Va
G
AI
K
lA - Programmable Unijunction
with "Program" Resistors
Al and R2'
•
R1R2
+o~~'
A2
1 B - Equivalent Test Circuit for
Figure lA used for electrical
characteristics testing
__~L-______~____~~-+
Ie - Electrical Characteristics
(also see Figure 2)
FIGURE 2 - PEAK CURRENT (lp) lEST CIRCUIT
'A
'GAO
FIGURE 3 - Va
AN~
I, TEST CIRCUIT
+V
510 k
16 k
Va
6V
A
~~: ~~~2
27 k
Cc
(See Figure 1)
0.6 V
Scopo
20
Put
Under
Test
7-79
~~-4------------
__
2N6027, 2N6028
TYPICAL VALLEY CURRENT BEHAVIOR
FIGURE 4 - EFFECT OF SUPPL V VOLTAGE
FIGURE 5 - EFFECT OF TEMPERATURE
1000
aDo
~TA=2aOe
ao o ~(SEE FIGURE 1)
i
ffi
RG= 10kS!=
300
;(
20 0
0-
~
0
5
t
0
III
100
1:l
aD
20
>
I O~
a.o
-
-
t
10
10
a.o
-50
20
-2a
TA = 250 e
r--
~
~
+50
+25
+100
ee = 0.2 pF
TA=2aoe
(SEE FIGURE 3)
/""
w
1.0
g
0.5
!:;
10
>
0.2
I-
:z
O. I
EO
'"
0.05
'"
«
EO
Ia
....v
0-
0:
:::>
0
'"~
5.0
.j
0.0 I
0.01
0
0.02
0.05.
0.1
0.2
0.5
1.0
2.0
'~
./
~.
./
L :...------ ~
a.o
a.o
10
~
~ r-
L
20
30
VS. SUPPLY VOLTAGE (VOLTS)
IF. PEAK FORWARD CURRENT (AMP)
B2
FIGURE 8 - STANDARD UNIJUNCTION
COMPARED TO PROGRAMMABLE UNIJUNCTION
STANDARD UNIJUNCTIDN
Elt-{B2
P
r----~--
R2
N
RBB - R1 + R2
R1
1)=--R1
R1 + R2
B1
B1
Circuit Symbol
Equivalent Circuit
Typical Application
PROGRAMMABLE UNIJUNCTION
A
E
14:
N
N
R1
P
K
RT
::R BB=R1+R2
R1
G
.A
G
1)=Ri+R2
K
B1
Circuit Svmbol .
Equivalent Circuit
with External "Program"
Resistors R 1 and A2
7-80
L
V
il!
~ 0.02
II
1.0~1'.
0
~
2.0
'"
~
~
FIGURE 7 - PEAK OUTPUT VOLTAGE
a
~
i
~
TA. AMBIENT TEMPERATURE (DC)
FIGURE 6 - FORWARD VOLTAGE
w
- --
r--VS = 10 VOLTS
(SEE FIGURE 1)
1.0MS!_
0
~
RG = 10kS!
100 kS!
VS.SUPPLYVOLTAGE (VOLTS)
S 5.0 1=
--
r-..
::---...
..~
0
r--.
::;
100 kS!
a 100
;
200
.3
0:
0:
!"-.
300
Typical Application
+,
~
40
2N6027, 2N6028
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
FIGURE 9 - EFFECT OF SUPPLY VOLTAGE AND RG
FIGURE 10 - EFFECT OF TEMPERATURE AND RG
100
10
50
5. 0
1
3. 0
ffi
2.0
~
~
~'"
~
1.0
~
.......
20
~::--,
;
=
~
'" 2.0
~
100kn
1.0Mn
O. 3
TA - 25 0 C
(SEE FIGURE 2)
5.0
I
I
10
15
RG = 10 kn
1.0
100 k!!
0.5
0.2
0.1
5.0
1l
F=.RG=10kn
0.5
Vs = 10 VOLTS
(SEE FIGURE 2)
:--"
10
1.0Mn
0.2
O. 1
-50
20
+50
+25
-25
VS. SUPPLY VOLTAGE (VOLTS)
+15
+100
TA.AMBIENT TEMPERATURE (DC)
2N6028
FIGURE 11 - EFFECT OF SUPPLY VOLTAGE AND RG
FIGURE 12 - EFFECT OF TEMPERATURE AND RG
1.0
10
0.1
0
0.5
~
Iifi
~
'"
O. 3
0.2
RG
10kn
«
100kn
3
I-
r...
~
~
O. 1
If 0.0 5
::.::: 0.2
~
~ O. 1
1.0Mn
0.03
TA = 25 0 C
(SEE FIGURE 2)
0.02
5.0
10
15
r-- RG = 10kn
20
--
.......
.......
.......
tOM!!
I
0.02
0.0 1
-50
/
......
100~
0.0 5
t---
I
0.0 I
!"'>o
1. 0
o. 5
1l
~ 0.0 1
VS= 10 VOLTS
(SEE FIGURE 2)
.......
2.0 ~~
.....
-25
~
+25
+50
TA. AMBIENT TEMPERATURE (DC)
VS.SUPPLY VO LTAGE (VOLTSI
7-81
~
+15
-=---+100
•
2N6068 ,A, B(SILICON)
thru
2N6075,A,B
MT20~MTI
SENSITIVE GATE
SILICON BIDIRECTIONAL THYRISTORS
· .. designed primarily for full·wave ac control applications, such as light
dimmers, motor controls, heating controls and power supplies; or wherever
full·wave silicon gate controlled solid·state devices are needed. Triac type
thyristors switch from a blocking to a conducting state for either polarity
of applied anode voltage with positive or negative gate triggering.
TRIACS
(THYRISTORS)
4 AMPERES RMS
25 THRU 600 VOLTS
• Sensitive Gate Triggering (A and B versions) Uniquely Compatible for
Direct Coupling to TTL, HTL, CMOS and Operational Amplifier
Integrated Circuit Logic Functions.
• Gate Triggering 2 Mode - 2N6068 thru 2N6075
4 Mode - 2N6068A,B thru 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uni·
formity and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
MAXIMUM RATINGS
Value
Unit
Rating
-Repetitive Peak Off·State Voltage. Note 1
ITJ = 1l0o CI
2N6068.A.B
2N6069,A,B
2N6070 .A,B
2N6071.A,B
2N6072,A.B
2N6073.A,B
2N6074,A,B
2N6075 AB
Symbol
·On·State Current RMS ITC = 85°C)
IT(RMS)
4.0
Amp
ITSM
30
Amp
12 t
3.6
A 2s
·Peak Surge Current
Volts
VDRM
25
50
100
200
300
400
500
600
"7
A
t-L-JLJ
lOne Full cycle. 60 Hz. TJ =-40 to +110 o C)
II
K
Circuit Fusing Considerations
IT J = -40 to+ll0oC, t= 1.0 to8.3 ms)·
"'Peak Gate Power
·Average Gate Power
·Peak Gate Voltage
PGM
.10
Watts
PG(AV)
0.5
Watt
VGM
5.0
Volts
TJ
Tstg
-
-40to+ll0
°c
"'Operating Junction Temperature Range
·Storage Temperature Range
Mounting Torque (6·32 Screw). Note 2
THERMAL CHARACTERISTICS
-40 to +150
°c
8.0
in. lb.
)
!~~
~-i
DIM
Characteristic
A
B
C
jI'Thermal Resistance.)unction to Case
Thermal Resistance. Case to Ambient
0
F
-Indicates JEOEC Registered Data
NOTES:
1. Ratings apply for open gate conditions. Thyristor devices shall not be
tested with a constant current source for blocking capability such that
the voltage applied exceeds the rated blocking voltage.
2. Torque rating applies with use of torque washer (Shakeproof WD19523
or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat·
sink contact pad are common.
For soldering purposes (either terminal connection or device mounting),
soldering temperatures shall not exceed +2000C, for 10 seconds. Consult factory for lead bending options.
7-82
G
J
K
Q
S
U
MILLIMETERS
MIN MAX
9.91 11.43
8.38
6.86
3.30
1.78
0.51
0.66
2.92
3.00
2.29 BSe
0.38
0.64
15.11 16.64
4.45
3.30
0.64
0.89
3.81 NOM
STYLE 5
PIN 1. MTI
2. MT2
3. GATE
INCHES
MIN MAX
0.390 0.450
0.270 0.330
0.070 0.130
0.020 0.026
0.115 0.118
0.090 BSe
0.025
0.655
0.175
0.035
NOM
CASE 77-02
2N6068,A,B thru 2NS075,A,8 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
'Peak Blocking Current (Either Directionl
Rated VDRM@TJ = 110oC, Gate Open
'DRM
-
-
2.0
mA
'OnoState Voltage (Either Directionl
ITM = S.O A Peak
VTM
-
-
2.0
Volts
Charecteristic
'Peak Gate Trigger Voltage
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = _40°C
MT2 1+1, G(+I; MT2 H, GI-) All Types
MT2 (+1, G(-I; MT2 H, G(+I 2NS06BA,B thru 2NS075A,B
Main Terminal Voltage = RatedVDRM, RL = 10k ohms, TJ = 110°C
MT2 (+1, G(+I; MT2 (-I, GH All Types
MT2 (+), G(-I; MT2 (-), G(+) 2NS06BA,B thru 2NS075A,B
'Holding Current (Either Directionl
Main Terminal Voltage = 12 Vdc, Gate Open, T J = -40°C
Initiating Current = 1.0 Adc
2N6068 thru 2N6075
2NS068A,B th~u 2NS075A,B
TJ
= 25°C
Volts
VGTM
-
1.4
1.4
2.5
2.5
0.2
0.2
-
-
mA
'H
-
-
-
-
70
30
-
-
30
15
ton
-
1.S
-
115
dvldt
-
5.0
-
V/,"s
,
2N6068 thru 2N6075
2NS068A,B thru 2N6075A,B
Turn·On Time (Either Direction)
'TM = 14 Adc, IGT = 100 mAdc
Blocking Voltage Application Rate at Commutation
@ VDRM, T J = 85°C, Gate Open
QUADRANT
(See Definition Below)
I
Peak Gate Trigger Current
Main Terminal Voltage
= 12 Vdc,
RL
= 100 ohms
Maximum Value
Type
IGTM
@TJ
I
mA
II
rnA
-III
rnA
IV
rnA
2NSOS8
thru
2N6075
+2SoC
30
-
30
-
-40°C
SO
-
60
-
2N6068A
thru
2N607SA
+25 0 C
_40DC
5.0
5.0
5.0
10
20
20
20
30
+25 0 C
3.0
3.0
3.0
5.0
_40 oC
15
15
15
20
2NS068B
thru
2NS075B
·Indicates JEDEC Registered Data.
QUADRANT DEFINITIONS
MT21+1
aUADRAUT I
QUADRANT II
SAMPLE APPLICATION:
TTL·SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
TrI~f
devlcn are ,~commended h:or gatmg on
Tn~cs
They IlIO ... ,dl!
SENSITIVE GATE LOGIC REFERENCE
I Cons,stlm predll;:tilble turn-on pom1S
3 Fan turn·on lillie tor cooler, more eff.c.ent
and rehabl., aptritlon
MT2Itl.GI_1
MT2t o l.Gt.'
Tn
EL.ECTRICAl CHA.~ACTER'STICS 01 RECOMMENDEO
BIDIRECTIONAL SWITCHES
QI-II------+-----GI.I
QUADRANT III
QUADRANT IV
PART NUMB'EA
V.
IS
VSl - VS2
Temperature
Cmln.c.enl
MT21-1,GI-I
Limp Q,mrner
G"neril
MBS4991
M6S4992
15 - 90 V
350",AMa ..
l:lo,.A Mol"
30·· SOV
100 - 400 ",A
02 VM.:o:
035 V MiIIJi
002"oC TVp
See AN 526 fOI Theory ill'id C"arecterI5t1C50f S,licon 8,dII1C1'I'Ir.al ~wlt(hts
MT2I-1
7-83
Hn
MeMOS INANDI
MtlSl00
60 - 10 V
D5VMa:o:
III
~!IONS
For 2N6068 Thru 2N6075
USAGE
FIRING QUADRANT
Ie LOGIC
2N6068A
Serl~
Senes
S.fle,
2N6Q68A
S."el
2N6068B
2N60688
Ser,85
S.,""
2N6068A
2N6068A
SlIlIe,
2N6068A
IV
2N60688
1N60b8B
s.,..,.
MeMOS (Buffer)
Op.rat.ona'
Amp!!'''!!'
Zero Voltllil!
Swlteh
2N6068A
Sarin
2N6068A
2NbOG8A
S811es
Series
58".'
2N6068,A,B thru 2N6075,A,B
(continued)
FIGURE 2 - RMS CURRENT DERATING
FIGURE 1 .- AVERAGE CURRENT DERATING
110
11°[:l~!!~~~~J:=I~J-;'=[=J
~~
.
~ ~ t-.......
~ 100
'\-, ~ ~ t-....
0:
~
a=30D
I
0:
~ 90
~
i'-..
~~
120·
60·
180·
0-
w
~
~
t.>
~ 80
~
.Ja
10
a.CONDUCTION ANGLE
o
1.0
3.0
2.0
10 a'CONDUCTION ANGLE
o
1.0
4.0
InAV). AVERAGE ON·STATE CURRENT (AMP)
>
4.0
. FIGURE 4 - POWER DISSIPATION
FIGURE 3 - POWER DISSIPATION
§_
3.0
2.0
IT(RMS). RMS DN·STATE CURRENT(AMP)
§
6.0
0:
6.0
~a~'~C~ON~D~U~C~TI~O~N~A~NG~L=E+-_-+_ _+-_~~~~~~
e
0:
~
~
~
~ 4.01--+--I--+-,.Lt-A-A~C--+---+----1
~ 4.01--+---l--+---+--~~~S"c..b-<~-l
co
«
0:
0:
w
;;:
w
>
<[
~ 2.01--+-Tl7S~~~-+--+---+---+---l
~ I--+--:..,;g::~~-=+--+--+~-II---l
2.0
II
1.0
2.0
o~~~LlJ-lj
o
1.0
2.0
3.0
4.0
4.0
3.0
IT(AV). AVERAGE ON·STATE CURRENT (AMP)
InRMS). RMS DN·STATE CURRENT (AMP)
FIGURE 6-TYPICALGATE·TRIGGER CURRENT
FIGURE 5 - TYPICAL GATE·TRIGGER VOLTAGE
~ 3.0
O~F.STAiE VOL+AGE .112 Vdc
::;
;!
ffi
~
~
W
to
>
ffi
to
to
2.0
o
o
~
OFF·STATE VOLTAGE' 12 Vdc_
ALL MODES
N
::;
ALL MODES
2. 0
0:
o
3. 0
1.0
~
r--- r--- r-
W
0:
a
1. 0
........
0:
1""--
O. 1
~ O.7
f'::
S!
ir.
t--....
0:
0-
0-
~ O.5
w
!;;:
to
O.5
f-.
to
1!
O. 3
>
-lIO
I'---. i'--
!;;
to
-40
-20
20
40
60
80
100
120
140
~ O. 3
!E
TJ. JUNCTION TEMPERATURE (·C)
-60
-40
-20
20
40
60
80
TJ. JUNCTION TEMPERATURE(·C)
7-84
100
120
140
2N6068,A,8 thru 2N6075,A,8 (continued)
FIGURE 7 - MAXIMUM ON-STATE CHARACTERISTICS
40
./
30
FIGUR E 8 - TYPICAL HOLDING CURRENT
3.0
V
ffi
./:;:.....--'"
20
~
~
10
~
N
:;
V
0
l!;
....
z
w
1.0
...
0.7
0:
0:
to
z
§
0
:z:
a:- 5.0
:e
ffi
0:
TJ=110oC
3.0
=>
~z
..........
0.5
0.3
-60
d
-40
20
-20
III
0:
...w
........
...........
....
~
I
S
....
" ""-
::>
u
7.0
"-
2.0
<
~
I
I
GATE OPEN
APPLIES TO EITHER DIRECTION
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (OC)
II
2.0
..
0
TJ = 25°C
r
FIGURE 9 - MAXIMUM ALLOWABLE SURGE CURRENT
1.0
4
2
0.7
III
S
0.5
I
ffi
~
I
4
>
2 r---
~ 2
r-....
T1: ~OHt; +110oC
............
r-......r-..
~ 20
I
o
r-.......
26
~
w
1
0.2
0--.......
.... 28
I
0.3
0.1
~ '3
><
~
II
.........
18
6
2.0
1.0
3.0
4.0
14
1.0
5.0
2.0
VTM, ON-5TATE VOLTAGE (VOLTS)
4.0
3.0
5.0
7.0
10
NUMBER OF FULL CYCLES
FIGURE 10 - THERMAL RESPONSE
~ 10
!!.
~ 5.0
-
z
m3.0
...
i! 2.0
--
~
ffi 1.0
....
'"
~
!
0.5
§
O. 1
0.1
TYPICAL
I-"""
' ; 0.2
n
---
0.3
f-:::: r:::
MAXIMUM
~ ::::::::
0.2
po
,
0.5
1.0
2.0
5.0
10
20
50
t,TIME(ms)
7-85
100
200
500
1.0k
2.0k
5.0k
10k
•
2N6116 2N6117
2N6118
(FORMERL Y MPU231, MPU232, MPU233)
SILICON
PROGRAMMABLE UNIJUNCTION
TRANSISTORS
40 VOLTS
250mW
SI LICON PROGRAMMABLE
UNIJUNCTION TRANSISTORS
· . . designed to enable the engineer to "program" unijunction
characteristics such as RBB, 1/. IV. and Ip by merely selecting two
resistor values. Application includes thyristor·triggor. oscillator. pu lse
and timing circuits. These devices may al!;() be used in special
thyristor applications due to the availability of an anode gate.
•
•
Programmable - RBB. 1/. IV and Ip
•
Hermetic TO·1S Package
•
Low On·State Voltage -- 1.5 Volts Maximum @ IF = 50 mA
•
Low Gate to Anode Leakage Current - 5.0 nA Maximum
•
High Peak Output Voltage - 16 Volts Typical
•
Low Offset Voltage - 0.35 Volt Typical (RG = 10 k ohms)
SEATING
PLANE
,
'MAXIMUM RATINGS
Symbol
Rating
Repetitive Peak Forward Current
Value
Unit
1.0
2.0
Amp
Amp
5.0
Amp
200
'2.0
rnA
mA/oC
ITRM
100 ~s Pulse Width. 1.0% Duty Cycle
20 ~s Pulse Width, 1.0% Duty Cycle
Non-Repetitive Peak Forward Current
ITSM
10 IJS Pulse Width
DC Forward Anode Current
IT
Derate Above 2SoC
IG
1.20
rnA
VGKF
40
Volt
Gate to Cathode Reverse Voltage
VGKR
5.0
Gate to Anode Reverse Voltage
VGAR
40
Volt
VAK
1.40
Volt
PF
l/uJA
250
2.5
mW
mW/oC
DC Gate Current
Gate to Cathode Forward Voltage
Anode to Cathode Voltage
Forward Power Dissipation @TA
= 2SoC
Derate A.bove 25°C
Operating Junction Temperature Range
Storage Temperature Range
Volt
\
TJ
-55 to +125
T stg
-65 to +200
t'ndicates JE DEC Registered Data
°c
°c
DIM
MILLIMETERS
MIN MAX
INCHES
MIN
MAX
0.209 0.230
5.84
0.178 0.195
4.95
0.170 0.210
5.33
0.533 0.016 0.021
0
0.030
0.762
E
0.406 0.483
F
2.548Se
G
~
H 0.914 1.17
1 0.046
0.048
J
0.711 1.22
i U.boo
K 12.70
0.250
6.35
L
45 BSe
M
45° 8Se
O. o BS
N
1.278SC
0.050
1.27
P
A
B
C
5.31
4.52
4.32
0.406
-
--
;
-WL
-
All JEOEC notes ilnd dimensions apply.
CASE 22·03
(TO·1S1
7-86
2N6116,2N6117.2N6118
* ELECTRICAL CHARACTERISTICS
(TA
= 25°C unless otherwise noted)
Characteristic
Offset Voltage
(VS
= 10 Vdc,
RG
= 1.0 Mn)
(VS
= 10 Vdc,
RG
= 10 k ohms)
2N6116
2N6117
2N6118
All Types
Gate to Anode Leakage Current
(VS
(VS
G~te
= 40 Vdc, T A = 25°C, Cathode Open)
=40 Vdc, T A = 75°C, Cathode Open)
to Cathode Leakage Current
(VS
= 40 Vdc, Anode to Cathode.Shorted)
Peak Current
(VS
= 10 Vdc, RG = 10 Mn)
(VS
= 10 Vdc, RG = 10 k ohms)
2N6116
2N6117
2N6118
2N6116
2N6117
2N6118
Symbol
Min
Typ
Max
Unit
1
VT
0.2
0.2
0.2
0.2
0.70
0.50
0.40
0.35
1.6
0.6
0.6
0.6
Volts
-
IGAO
-
1.0
30
5.0
75
5.0
50
nAdc
1.25
0.19
0.08
4.0
1.20
0.70
2.0
0.3
0.15
5.0
2.0
1.0
IlA
18
18
270
270
0.8
50
25
-
IGKS
-
2,9·14
Ip
-
1.4,5
I
IV
= 10 Vdc, RG = 1.0 Mn)
IlA
-
2N6116,2N6117
2N6118
(VS = 10 Vdc, RG = 10 k ohms) 2N6116
2N6117,2N6118
Forward Voltage (IF - 50 mA Peak)
70
50
Peak Output Voltage
(VB = 20 Vdc, Cc = 0.2IlF)
Pulse Voltage Rise Time
(VB
nAdc
-
Valley Current
(VS
Figure
-
1,6
VT
-
1.5
Volts
3,7
Vo
6.0
16
-
Volts
3
tr
-
40
80
ns
= 20 Vdc, Cc = 0.2IlF)
·'ndicates JEOEC Registered Data
FIGURE T - ELECTRICAL CHARACTERIZATION
~
A
R2
Rl
-u~~~-VS=Af+R2VB
Rl
lA - PROGRAMMABLE UNIJUNCTION
WITH "PROGRAM" RESISTORS
f,l+::
R _ RIR2
Vp vp- Vs
--+P------L-----~~ IA
lB - EQUIVALENT TEST CIRCUIT FOR
FIGURE lA USED FOR ELECTRICAL
CHARACTERISTICS TESTING
(ALSO SEE FIGURE 2)
RI and R2
FIGURE 2 - PEAK CURRENT lip) TEST CIRCUIT
IF
lC - EL;CTBICAL CHARACTERISTICS
FIGURE 3 - Vo AND tr TEST CIRCUIT
+V
IpISENSE)
100pV = 1.0 nA
ADJUST
IV
IGAO
510 k
16k.
VD
6V
-=-
VB
0.01 jJF
RG ~ R/2
Vs ~ VB/2
Cc
27 k
(See Figure 1)
SCOPE
201l
20
PUT
UNDER
TEST
7-87
0.6 V -7'=1--1------------
•
2N6116, 2N6117, 2N6118
TYPICAL VALLEY CURRENT BEHAVIOR
FIGURE 4 - EFFECT OF SUPPLY VOLTAGE
1000
1000
t==TA=250 C
ISEE FIGURE 1)
f:=
RG= 10kU=
50 o
!
FIGURE 5 - EFFECT OF TEMPERATURE
i
=<
.3
....
~ 20 0
0:
0:
B
;
~
?
0
0
I O~
5.0
50
.
>
20
I--
5.0
-75
20
FIGURE 6 - FORWARD VOLTAGE
w
2. O
g
1. 6
~
~
~
TJ = 250 C-
./'
1. 2
/'
ri-
~
V
~
'"
""
...: O.4
.,:
~
>
1.0
......v
....
~
~
0.5
/"
15
.
0.2
2.0
5.0
--
/'
/'
.....-::
5.0
~
r-
J---
10
15
20
25
VS. SUPPLY VOLTAGE IVOLTS)
FIGURE 8 - STANDARD UNIJUNCTION
COMPARED TO PROGRAMMABLE UNIJUNCTION
STANDARD UNIJUNCTIDN
B2.
:~
RB2
RBB=AI+A2
Al
"= lfi+l!2
AI
Bl
CIRCUIT SYMBOL
RT
Eryp
Bl
TYPICAL APPLICATION
EQUIVALENT CIACUIT
PROGRAMMABLE UNIJUNCTION
t,
A
E~p
G
: : ABB=RI+R2
fl=~
N
~
Al
Cc
K
. CIRCUIT SYMBOL
BI
EQUIVALENT CIACUIT
WITH EXTERNAL "PAOGAAM"
AESISTORS Rland R2
7-88
-
/'
o
o
5.0
/'
",,10
IF. PEAK FORWARD CURRENT lAMP)
'~
+l25
/'
'">
~
0.1
+100
Cc = 0.2.F
TA = 250 C
ISEE FIGURE 3)
20
~
lI!
0
0.05
+75
w
'" O.B
•
I---
~
I-
;
+So
+25
1.0Ju
FIGURE 7 - PEAK OUTPUT VOLTAGE
25
2.4
100kSl==
TA. AMBIENT TEMPERATURE IOC)
2. B
~
'"
~
r-t--
............... r-
-25
-50
VS.SUPPLYVOLTAGE IVOLTS)
RG = 10kSl
........
Vs = 10 Volts
ISEE FIGURE 1)
10
j1.0MU_
IS
r--..
..........
?
10
"
100
0:
a
~
-
0
200
iii
0:
100 kl!
100
--
500
300
TYPICAL APPLICATION
30
~
35
40
2N6116;2N6117,2N6118
TYPICAL PEAK CURRENT BEHAVIOR
2N6116
FIGURE 10 - EFFECT OF TEMPERATURE AND RG
FIGURE 9 - EFFECT OF SUPPLY VOLTAGE ANO RG
10
100
50
7.0
5.0
...~
3.0
13
1.0
F="= RG • 10 kn
0.7
0.5
100kn
~
"~
~
20
10
,
2.0
50
2.0
1.0
1.0Mn -
f----- TA· 25°C
(SEE FIGURE 2)
5.0
_RG-l0kn
:--...
100 k-
~
(SEE FIGURE 21
2.0
B
~
r---
.3
i
1.0
"~
o. 7 = R G · l 0 k n
.:f
0.5
0.3
~'"
~
-
100 k!!
O. 1
50
5.0
2.0
~
"'-
10
05
AG= 10ku
0.2
01
f'....
15
20
100kn
------
0.02
0.01
-75
10M!!
10
Vs 10VOLTS(SEE FIGUR~ 2) =
."'"
0.05
O. 2
.
20
10
10Mf2
-50
-25
0,
+25
+50
+75
+100
+125
TA. AMBIENT TEMPE RATURE (OC)
VS. SUPPLY VOLTAGE IVOLTS)
2N6118
FIGURE 14 - EFFECT OF TEMPERATURE AND RG
FIGURE 13 - EFFECT OF SUPPLY VOLTAGE AND RG
~
i
'"
~
.:f
1.0
50
07
0.5
20
10
03
RG· 10 k!!
~
IOOkH
.3
>z
0.2
w
1
0.0 7
005
10M!!
0.03
~
TA = 25°C
(SEE FIGURE 21
00 2
0.0 1
5.0
'"'"=>
u
"
~
10
15
2.0
10
20
VS· 10 VOLTS(SEE FIGURE 2) ~
"-
t-...
0.5
-- r-
RG -10 k!!
0.2
01
""-.. ..........
0.05
0.02
001
0005
-75
r---
_\
5.0
100 k!2
-.......-..-. --............
10M"~
-50
-25
+25
+50
TA.AMBIENTTEMPERATURE (OC)
VS.SUPPLY VOLTAGE (VOLTS)
7-89
+75
+100
+125
2N6151 (SILICON)
thru
2N6156
Q----il~~I----O
TRIACS
(THYRISTORS)
10 AMPERES RMS
SILICON BIDIRECTIONAL THYRISTORS
... designed primarily for full·wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies;
or wherever full·wave silicon gate controlled solid·state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering,
•
All Diffused and Passivated Junctions for Greater Parameter Uni·
formity and Stability
•
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Gate Triggering Guaranteed in Two (2N6154, 2N6155, 2N6156)
or Four Modes (2N6151, 2N6152, 2N6153)
MAXIMUM RATINGS
Rating
• Repetitive Peak Off-State Voltage, Note 1
(TJ
=-40 to +loooC)
Svmbol
Value
Unit
Volts
VORM
% Sine Wave 50 to 60 Hz, Gate Open
Peak Principle Voltage
,.
2N6151,2N6154
2N6152,2N6155
2N6153,2N6156
·Peak Gate Voltage
'OnoState Current RMS (TC = -40 to +750 C)
Full Cycle Sine Wave 50 to 60 Hz (TC = +900 C)
·Peak Surge Current
(One Full Cycle, 60 Hz, TJ = +750 C)
preceded and followed by 10 A Current
Circuite Fusing Considerations
=-40 to +1000 C, t = 1.0to 8,3 ms)
'Peak Gate Power (TJ =+750 C,Pulse Width = 2.0,...)
• Average Gate Power ITJ - +75°C, t =8.3 ms)
-
200
400
600
VGM
10
Volts
IT(RMS)
10
5.0
Amp
ITSM
100
Amp
12t
40
A2s
STYLE 4:
PIN I.MTI
2. MT2
3. GATE
(TJ
·Peak Gate Current
·Operating Junction Temperature Range
·Storage Temperature Range
·Mounting Torque (6-32 Screw), Note 2
PGM
20
Watts
PG(AV)
0.5
Watt
IGM
2.0
Amp
TJ
-40 to +100
°c
Tstg
-40 to +150
-
8.0
Characteristic
Svmbol
Max
Unit
R8JC
R8CA
2.0
50
°CIW
Thermal Resistance Case to Ambient
Q
°C/W
U
A
B
°c
C
0
in.lb
F
THERMAL CHARACTERISTICS
* Thermal Resistance, Junction to Case
DIM
G
H
J
K
M
R
MILLIMETERS
MIN
MAX
INCHES
MIN MAX
16.13 16.38 0.635 0.645
12.57 12.83 0.495 0.505
3.18 3.43 0.125 0.135
1.09 1.24 0.043 0.049
3.51 3.76 0.138 0.148
4.22 BSC
0.166 BSC
2.67 2.92 0.105 0.115
0.813 0.864 0.032 0.034
15.11 16.38 0.5\~
90 TYP
4.70 4.95 0.185 0.195
1.91 2.16 0.075 0.085
6.22 6.48 0.245 0.255
CASE 90·05
·Indicatas JEOEC Registered Data.
7-90
2N6151 thru 2N6156 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 250 unless otherwise noted)
Symbol
Min
Typ
Max
Unit
'Peak Blocking Current (Either Direction)
Rated VDRM @TJ = tOOoC. Gate Open
IDRM
-
-
2.0
mA
·On·State Voltage (Either Direction)
ITM = 14 A Peak; Pulse Width = 1.0 to 2.0 ms. Duty CycleS2.0 %
VTM
-
1.3
1.B
Volts
Charactoristic
Gate Trigger Current, Continuous de
Main Terminal Voltage = 12 Vdc, RL
Minimum Gote Pulse Width = 2.0,..s
MT2 (+), G(+) All Types
MT2 (+), G(-) 2N6151 thru 2N6153
MT2 H, GH All Types
MT2 H, G(+) 2N6151 thru 2N6153
'MT2 (+), G(+); MT2 H, GH TC
*MT2 (+), GH; MT2 H, G(+) TC
= -40oC All Types
= -40o C 2N6151 thru
Gate Trigger Voltage, Continuous de
Main Terminal Voltage = 12 Vdc, RL
Minimum Gate Pulse Width
MT2
MT2
MT2
MT2
(+),
(+),
H,
H,
G(+)
GH
GH
G(+)
=
mA
IGT
= 100 Ohms
-
2N6153
50
75
50
75
-
100
125
-
Volts
VGT
= 100 Ohms
2.0 ,",S
-
All Types
2N6151 thru 2N6153
All Types
2N6151 thru 2N6153
*MT2 (+), G(+); MT2 H, GH TC
*MT2 (+). GH; MT2 H, G(+) TC
= -40oC All Types
= -40o C 2N6151 thru
Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc, Gate Open, }
= 200 rnA
-
0.9
0.9
1.1
1.4
-
-
.-
2.5
3.0
0.2
0.2
-
-
-
6.0
-
40
75'
tgt
-
1.5
2.0
,..s
dv/dt
-
5.0
-
V/,..s
-'
2N6153
Main Terminal Voltage = Rated VDRM, RL ~ 10 k ohms, TJ
*MT2 (+). G(+); MT2 H, GH All Types
'MT2 (+). GH; MT2 H, G(+) 2N6151 thru 2N6153
Initiating Current
6.0
6.0
10
25
= 1000 C
2.0
2.5
2.0
2.5
mA
IH
TC = 2So C
TC = -40°C
*Turn-On Time
Main Terminal Voltage = Rated VORM ' ITM = 14 A
Gate Source Voltage = 12 V, RS =100 Ohms, Rise Time = 0.1 ,..S,
Pulse Width = 2.0 ,..s
Blocking Voltage Application Rate at Commutation, f =60 Hz,TC =75 0 C
On-State Conditions:
ITM = 14 A, Pulse Width = 4.0 ms, dildt =5.3 Alms
Off-State Conditions:
Main Terminal Voltage = Rated VDRM (200,... minI.
Gate Source Voltage = a V, RS = 100!1
-Indicates JEDEC Registered Data
NOTES:
1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such
that tho voltage applied exceeds the rated block jng voltage.
2.
Torque rating applies with use of torque washer (Shakeproof WD 19522 #6 or equivalent). Mounting torque in excess of 8 in. Ibs. does not
appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +2300 C.
Electrical Characteristics
Trigger devices are recommended for gating on Triaes
Triggers Provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient
and reliable operation.
For General Usage
For Lamp Dimmer
Symbol
MBS4991
MBS4992
MBS100
=
IS =
6.0-10V
7.5-9.0 V
3.0-5.0 V
350,..A Max
120,..AMax
100-400,..A
0.2 V Max
0.35 V Max
Vs
0.5 V Max
VS1-VS2=
Temperatur. Coefficient = 0.02%/oC Typ
See AN-526 for Theorv and Characteristics of Silicon Bidirectional Switches.
7-91
•
2N6151 thru 2N6156
(continued)
FIGURE 1 - AVERAGE CURRENT DERATING
100
'"'
...::>'"
90
~
80
c
w
I~ ~
...~
5u
...
~~
"I"
;2
1'\
iJ\y '"
~ ~ t"'---.
90
I":IS::: t---..
w
...«'"
::>
~~
600
1
70
e..
'"'
~ ~ t;::::".
a = 300
w
FIGURE 2 - RMS CURRENT DERATING
...... ~
100
'"
...~
'w
~t:--...
120 0
90'ri'
150 0
t>: R~
........
80
5u
...
..1.
iJ\y
70
..1.
.= CO~DUCTIIDN ANfLE
60
o
~
• = 1800
w
1800
30 0
/~Do_
.= C~NDUCrION A~GLE
60
2.0
4.0
6.0
8.0
10
o
2.0
IT(AV). AVERAGE ON·STATE CURRENT (AMP)
4.0
6.0
8.0
10
IT(RMS). RMS ON·STATE CURRENT (AMP)
I
FIGURE 3 - POWER DISSIPATION
FIGURE 4 - POWER DISSIPATION
16
r
'i riJ\y
..1.
12
'"w
~
w
to
-
L
.=300
8.0
1;'0 0
~~
i
~
~
4.0
.= CONDUCTION ANG LE +--+---1f---+~"'9'P""==-j;,"-i
:ll
8.0 t--+--+-+--t--+--I7"7t~""'f-:;;;..f--j
«
~
:>
~
~
2.0
4.0
~-J.:J:
..1. ~ . +--+--+--+-
:;;
~~
o~
12
:;;
~
~ 0"
~~
«
•
120 0
.=CONDUCTION ANGLe' -60~
:;;
:>
~
lJOO
W~
6.0
8.0
10
4.0 t--t--+--tno1S.......-:?"~j,oo-'9-~
o~fijnm
o
2.0
IT(AV). AVERAGE·ON·STATE CURRENT (AMP)
FIGURE 5 - TYPICAL GATE TRIGGER VOLTAGE
1
~
w
to
~
o
ffi
to
to
...a:
...~
1.0
§
1
l - I'-
1
O. 7
w
O. 5
r----.
'"
o
g
...z
-
-
10
w
~ 1.0
r- r-- ........
r-...
::>
r--
:;;to'"'
O.7
...0:
.5
to
w
1
!;;:
,..:
to
>
1
1
OFF·STATE VOLTAGE = 12 Vdc
ALL MODES
:::;
« 2.0
".
-
8.0
3.0
N
OFF·STATE VOLTAGE -12 Vdc
ALL MODES
.
l- t-
6.0
FIGURE 6 - TYPICAL GATE TRIGGER CURRENT
3. 0
~
c5 2.0
4.0
IT(RMS). RMS ON·STATE CURRENT (AMP)
-
r--.
to
O.3
-40
,..:
!E O.3
-20
20
40
60
80
100
-40
-20
20
40
60
TJ.JUNCTION TEMPERATURE (OC)
TJ.JUNCTION TEMPERATURE (OC)
7-92
80
100
2N6151 thru 2N6156 (continued)
FIGURE 7 - MAXIMUM ON·STATE CHARACTERISTICS
FIGURE 8 - TYPICAL HOLDING CURRENT
"
0
0
3.0
/~
~ P'
0
./
c
~
l/
:::;
«
II
iiiz
40
0;
I
0.3
~
80
....
I
I
0.5
O. 2
0.5
r----
I
B
w
1.0
'"~
I II
II
~
....
",
~ o. 5
o
0
~
I I
GAfe OPEN I
INITIATING CURRENT - 200 mAde
APPLIES TO EITHER DIRECTION
......
0:
~
i~
0
""'
2.0
'"~
I
I I
20
t---
TJ =-40 to +100 oC
6OH,
li
o
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
3.0
2.0
5.0
7.0
10
NUMBER OF FULL CYCLES
VTM, ON·STATE VOLTAGE IVOLTS)
FIGURE 10 - THERMAL RESPONSE
2. 0
I--
0
5
.........
3
MA:" 1--""1--'
2
~
1
g
~I-
TYPICAL
I--"""
5
~ 0.03
0.02
5xl0-5
lxlO-4
2xl0·4
5xl0·4
lxl0-3 2xl0":3
5xl0·3
0.01
0.02
t, TIME I,)
7-93
0.05
0.1
0.2
0.5
1.0
2.0
5,0
2N6151
thru
2N6165
MT20~MTI
TRIACS
SILICON BIDIRECTIONAL TRIODE THYRISTORS
30 AMPERES RMS
200-600 VOLTS
· .. designed primarily for industrial and military applications for the
control of ac loads in applications such as light dimmers. power sup'
plies, heating controls, motor controls, welding equipment and power
switching systems; or wherever full·wave, silicon gate controlled
solid·state devices are needed.
•
Glass Passivated Junctions and Center Gate Fire
•
•
Isolated Stud for Ease of Assembly
Gate Triggering Guaranteed I nAil 4 Quadrants
~
'Peak Repetitive Off-5tate Voltage
ITJ
=
Symbol
~">
.~ l:~
MAXIMUM RATINGS
Rating
2N6157·59
Unit
Value
Volts
VDRM
-65 to +1250 CI
1/2 Sine W;rve 50 to 60 Hz, Gate Open
i
MILlIMETfRS
,--;.• :----T
".'M M'. M.X
I -~
~ I
L
12.1312.83
>~iiQXLJ.::2~~
1.40
"'Peak Pnnclpal Voltage
2N6157, 2N6160, 2N6163
2N6158, 2N61S'I, 2N6164
2N6159, 2N6162, 2N6165
"Peak Gate Voltage
*RMS On-State Current
200
400
600
VGM
Volts
10
Amp
30
rr~
'-A::::J
PIN 1. MTl
::~~E
20
•
ITSM
250
Amp
12t
210
A 2s
PGM
20
Watts
PGIAVI
0.5
Watt
IGM
2.0
Amp
TJ
-65 to +125
DC
T stg
-65 to +150
°c
-
30
in. lb.
(One Full Cycle of surge current
at 60 Hz, preceeded and followed by a 30 ARMS current,
TJ = +125 0 CI
Circuit Fusing Considerations
ITJ = -65 to +1250 C,
t = 1.0 to 8.3 msl
• Peak.. Gate Power
CASE 263-03
IT J = +80DC, Pulse Width = 2.0 !lsi
... Average Gate Power
ITJ = +800 C, t = 8.3 msl
·Peak Gate Current
·Operating Junction Temperature Range
·Stor~ge
Temperature Range
·Stud Torque
0055
STYLE 2:
2N6160-62
"
Full Sine Wave, 50 to 60 Hz
·Peak Non-Repetitive Surge Current
17.02
2.1&
CASE 310-01
ITIRMSI
IT C " -65 to +85 0 CI
ITC = +100DCI
I
2N6160 thru 2N6165
THERMAL CHARACTERISTICS
Characteristic
-Thermal Resistance, Junction to Case
CASE 311-01
-Indicates JEOEC Registered Data.
7-94
eo
'<'~''-_
/0.'
2N6157 thru 2N6165
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
• Peak Blocking Current (Either Direction)
Symbol
Min
Typ
Max
Unit
IDRM
-
-
7.0
mA
VTM
-
I.S
2.0
Volts
-
15
20
20
30
60
70
70
100
-
200
250
-
O.B
0.7
0.B5
Rated ifDRM@TJ= 12SoC
'Peak On-State Voltage IEither Direction)
ITM = 42·A Peak. Pulse Width = 1.0 to 2.0 ms. Duty Cycle" 2.0 %
Gate Trigger Current. Continuous de 111
Main Terminal Voltage = 12 Vdc. RL
MT2 (+1. G(+I
MT2 (+). GH
MT2H.GH
MT2H.G(+1
mA
IGT
= 50 Ohms
'MT2 (+1. G(+I; MT2 (-I. GH TC =-6SoC
'MT21+1. G(-I; MT2 (-I. G(+I TC = -6SoC
Gate Trigger Voltage, Continuous de
Main Terminal VOltage
= 12 Vdc.
Volts
VGT
R L = 50 Ohms
MT2 (+1. G(+I
MT2 (+1. G(-I
MT2H.GI-1
MT2 I-l. GI+I·
'All Ouadrants. T C = -6SoCI
'Main Terminal Voltage = Rated VDRM. RL
= 10 k ohms. TJ =+12SoC
1.1
-
20
Holding Current
2.0
2.1
2.1
2.S
3.4
-
mA
IH
Main Terminal Voltage = 12 Vdc. Gate Open
I nitiating Current:::: 500 rnA
MT2 (+)
MT2 (-I
-Either Direction, TC:::: -65°C
-Turn·On Time
tilt
-
-
70
80·
200
1.0
2.0
I"
-
5.0
-
V/!'s
8
10
Main Terminal Voltage "" Rated VORM. ITM :: 42 A,
Gate Source Voltage = 12 V.
Pulse Width = 2.0!,s
RS~
50 Ohms. Rise Time
= O.I!,s.
Blocking Voltage Application Rate at Commutation, f == 60 HZ,T C - 85u C
dv/dtlc)
IOn-State Conditions:
ITM
= 421'.. Pulse Width = 4.0 ms. di/dt = 17.5 Alms
Off State Conditions:
Main Terminal Voltage"" Rated VORM (200 IolS min),
Gate Source Voltage = 0 V. RS
•
= SO n
-Indicates JEOEC Rogistered Data.
(1) All voltage polarity reference to main terminal 1.
FIGURE 2 - POWER DISSIPATION
FIGURE 1 - RMS CURRENT DERATING
12S
i"'ooI
....
118
"
u
Q
W
'":::>
~
~
....
110
5
~
...... ::s:~
.......
94
cf-
8S I'-
f78 c70
o
0'=
I"": E':::
de-
102
w
6
I
II!!!
r-
~~
V
..-:
I""" t"
1800
90·
_ 30·
140
'"
~
w
" -...; t":t-..
~
" " "-
j\Y
a: ja
48
8.0
12
IS
20
24
-j\Y
j
_
==
de_ .."" V
a= 180....
a
~
24
,.
« 16
~
.a.. B.O
~
........ '"'"
o
o
32
4.0
h
~ ~ V;
~
:;;..
=e:r-:::::
~
::;.- L
-< .v'
.... SO·
V
7-95
i""
"....
30·
I
8.0
12
16
20
24
ITIRMS). RMS ON·STATE CURRENT IAMPI
ITiRMSI. RMS ON·STATE CURRENT IAMPI
./
../ /" ./ V
120· .../. 17' ../ V
90· ... ......: V ~
V
a: CONDUCTION ANGLE
2
>
28
V
1,,/ V
to
ffi
........ .:"
I I I I
4.0
1
W
"-
CONOUCTION ANGLE
_I
28
32
2N6157 thru 2N6165
FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE
,
1.7
~
'"
2:
w
'"
FIGURE 5 - MAXIMUM ON-STATE CHARACTERISTICS
,
,
300
1.5
1.3
~
'">
""w
'";;;'"
1.1
.9
r-
r-.....
---
r-;;: ~
r-.
-~
'-'
....
w
....
.7
;:.
2
.5 r-OUAORANTSt 3
..'"
...c
./
,/"';
, \ 4
·40
,/
./
20
·20
~
-- --~
40
60
80
Ii:
~
........ :::
100
...
120
140
~
g;
,
;C
SO
10
ffi
7.0
~
5.0
~
a
30
'"
'"
;;;
20
ffi
~~
.......
.........
....
w
~
'"
:§. 10
QUAO
7.0
-60
•
RANT~ ~ ~ ~
4'
-40
p-....,
r"':: t-....
........
f>:>< ~
~ t-....-......;;
.......
V
............
20
·20
2. 0
.r-....
~
1
z
;,. 3. 0
.~
j'-.... ~
.......
40
1.0
r-.....
r--.... ~ ~
60
80
100
120
0.7
0.5
0.3
1.0
140
T.I,JUNCTION TEMPERATURE (OCI
20
r-...
!.... I' t'--..
........
ill
~
~
'"z
~
to
,
3.0
3.4
3.8
4.2
4.6
5.0
FIGURE 7 - MAXIMUM ALLOWABLE SURGE CURRENT
'" 300
........
a~ 20 0 1'-0.
MAIN TERMINAL #1 POSITIVE
~ t-...
.......
/
w
>
~
"""" ........
w
~
.......
~
.......
..........
r---. ....
Z
~ 100
r-...
....... ~
~
TJ '" -65 to 125°C
I: 60 Hz
w
~
~
"
E
I"
·20
2.6
0::
== S.O I-- jAIN TjRMINA,L ~ PiSITIVE,
-40
2.2
;
::
3.0
-60
1.8
50 0
GATE OPEN
-'
1.0
1.4
ViM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTSI
FIGURE 6 - TYPICAL HOLDING CURRENT
30
r
~
OF~-STAT~ VOLiAGE' \2 V-
............
1/,/
/I
.,i5
z
-
1/
20
w
~
-:,.. V
1/
0
u
=>
70
,
0
FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
.......
./
L ~ ~250C
0
........
TJ, JUNCTION TEMPERATURE (DC)
....
TJ = 250C
100
........
(I , /
.3
·60
.§
i..---""
200
OFF-STATE VOLTAGE: 12 V -
00
~
lW
0
7
50
1.0
~
TJ,JUNCTION TEMPERATURE (OCI
2.0
5.0
7.0
10
20
NUMBER OF FULL CYCLES
7-96
50
70
100
2N6157 thru 2N6165
FIGURE 8 - TYPICAL THERMAL RESPONSE
-I
L
1'0~!l~~~~~~~~~~~~~~~~~~~~~~~~~!!~~~~~~~~~~~~~~
0.7
0.5
~ ~ 0.3 t-++ttl--if--f--+PR_EI-SS,F_ITI-PI-AI:JCKI-IA...G",Eq:--:±,....-I-=FH+I*-l-t--t-t++++tf--++-l-lH+f-H+-H-t-+--H
~ ~ 0.2 t-++ttl----If--f---t::;;;I-"1"'I::I-I-H::::-.:..S~ PACKAGE-HH-I-H-+-+--+-+-++-I+++-++-I-H+++H---l-f--l--H
W",
~it ~ O'I~~I~~~j-~-~;ijl~~~!III~;;§~;ijl~~~~~;I~;;§~~
f 'i '(I' i
0:-
~ ~ 0.07
~ ~ 0.05
'-'"'
iii 0.03 f-+++It--+-+-+-H+++l+--+-+-f-H--HI+t+-+-+ Z8J lt
~81~
0.02t-++ttl--lf--f--+++I-I-H+-+-+--t-t-t-H+tt--+-+-t-t-t-++ttl--l-lf-+++-l..-tiH+-+-+--t-l-i
-
W 0:
0.01 !:-:I....l..l.l::l~+.--L.......l....:L,-L-l~---l+.--L..--'-:L,-L-l.J...J,l:---l+-_.l......J
II-::II:-JIU...L.11~...L....."~.l-...J.~-l...LI,L-...L.....,,l-.L....l-:-1
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t,
20
TIME (ms'
7-97·
50
100
200
500
Ik
2k
5k
2N6167
thru
2N6170
SILICON CONTROLLED
RECTIFIER
REVERSE· BLOCKING TRIODE THYRISTOR
20 AMPERES RMS
100-600 VOLTS
· .. designed for industrial and consumer applications such as power
supplies; battery chargers; temperature, motor, light and welder can·
trois.
• Economical for a Wide Range of Uses
•
High Surge Current - ITSM = 240 Amp
• Rugged Construction in Isolated Stud Package
MAXIMUM RATINGS
Rating
·Peak Repetitive Forward and Reverse
Blocking Voltage 11)
(TJ = _40°C to +100o C)
Symbol
Value
2N6167
2N6168
2N6169
2N6170
-Non-Repetitive Peak Reverse
Unit
Volts
VDRM
VRRM
100
200
400
600
Volts
VRSM
Blocking Voltage It ';;5.0 ms)
2N6167
2N6168
2N6169
2N6170
•
... Average Forward Current
150
250
450
650
Amp
IT(AV)
(T C = -40 to +65 0 C)
(+850 C)
13
6.5
• Peak Surge Current
Amp
ITSM
(One cycle, 60 Hz) IT C = +6SoC)
11.5 ms pulse@TJ = 100Dc
240
560
Preceeded and followed by no current
or Voltage
Circuit Fusing
(T J =-40 to +100DC) (t = 1.0 to 8.3 ms)
·Peak Gate Power
... Average Gate Power
... Peak Forward Gate Current
·Operating Junction Temperat~re Range
·Storage Temperature Range
·Stud Torque
12 t
235
A 2s
PGM
5.0
Watts
PG(AV)
0.5
Watt
IGFM
2.0
Amp
TJ
-40 to +100
°c
Tstg
-40 to +150
°c
DIM
A
-
30
in. lb.
C
Symbol
Max
Unit
R6JC
1.5
°CIW
*THERMAL CHARACTERISTiCS
Characteristic
Thermal Resistance, Junction to Case
8
F
G
H
J
K
L
Indicates JEOeC Registered Data.
(1) Ratings apply for zero or negative gate
STYLE I:
1. CATHODE
2. GATE
3. ANODE
voltage.
Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode. Device, should
not be tested with a constant current source for forward or reverse block ing capability
such that the voltage applied exceeds the rated block ing voltage.
7-98
n
T
MILLIMETERS
MIN MAX
14.2
12.73 12.83
- 32.51
4.06
2.16
2.41
1.60 2.01
10.67 11.56
7.62
8.89
6.48
6.99
1.40
2.16
3.43
3.81
INCHES
MIN MAX
0.551 0.559
0.501 0.505
- 1.280
0.1611
0.085 0.095
0.063 0.079
0.420 0.455
0.300 0.350
0.255 0.275
0.055 0.085
0.135 0.150
CASE 311-01
2N6167 thru 2N6170
ELECTRICAL CHARACTERISTICS (TC
= 25°C unless otherwise noted)
Char~tcristic
Symbol
• Peak Forward Blocking Current
IVo = Rated VORM, gate open, T J = 100°C I
2N6167
2N6168
2N6169
2N6170
IORM
* Peak Reverse Blocking Current
IVR = Rated VRRM,gate open, TJ = 1000 CI
2N6167
2N6168
2N6169
2N6170
IRRM
-
1.0
1.0
1.0
1.0
-
-
Gate Trigger VoltagJ!, Continuous de
2.0
2.5
3.0
4.0
,
mA
-
"TC ~ -40°C
TC = 25°C
IVo = 12 V, RL = 24 fll
Unit
Max
mA
-
·Peak Forward "On" Voltage
IITM = 41 A Peakl
Gate Trigger Current, Continuous de
Typ
Min
1.0
1.0
1.0
1.0
2.0
2.5
3.0
4.0
1.5
1.7
Volts
mA
VTM
_.
IGT
-
-
-
2.1
75
40
-
-
0.8
0.63
2.5
1.6
-
-
90
50
mA
3.5
-
-
1.0
~s
-
-
25
40
, --
-
50
-
Volts
VGT
1VO=12V,RL=24fll
"TC = -400 C
TC = 250 C
Holding Current
"TC. = -40°C
TC = 25°C
IVO = 12 V.gate open,
IT = 200 mAl
IH
·Turn~On
Time ltd + t r)
IITM = 41 Adc, Vo = Rated VORM,
IGT = 200 mAde, RiseTime,;;; 0.05 ~s,PulseW,dth = 10 Itsl
ton
Turn-Qff Time
'off
~s
IITM = 10 A. I R = 10 AI
IITM = 10 A,IR = 10 A, TJ = 100DCI
Forward Voltage Application Rate
dv/dt
V/~s
(TJ = 100°C, Vo = Rated VORMI
"Indicates JEDEC Registered Data.
FIGURE 1 - AVERAGE CURRENT OERATING
FIGURE 2 - POWER DISSIPATION
o~~
5
\~~
8
o
0
10
~
w
~
I-
;li
~
ii'l
I-
5
'";3
§l
0
5
x
0
w
;:;;
«
'"
U
I-
60·
90·
"
180·
0
2.0
4.0
6.0
8.0
10
12
I
14
16
18
c:t '"
2
0
L
300
1
L
1/
IL
L
./
1- JLL IL !.."
V
J:'~
r----
-== ~-ANGLE
.= CONDUCTION
./
I
TJ~100·C
~ I-'"
1/,& V
'6i'
.0
""
90·
600
r-- t -
~I'..
1'\
.L
L.
6
• = CONDUCTION ANGLE
5
de
/'
180·
1\ !0-"~
.J11 _
-j-I........
\ \ 1\.'
\
1\ 1\ r\ I'""" ........I'..
0:"'300
./
4
t--
O~
2.0
20
4.0
6.0
8.0
10
12
14.
16
ITIAVI,AVERAGE FORWARD CURRENT (AMPI
IT(AV),AVERAGE FORWARD CURRENT IAMPI
7-99
18
20
•
2N6167 thru 2N6170
FIGURE 3 - MAXIMUM ON-sTATE
CHARACTERISTICS
FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
500
....... 1---"
200
V ....... V
r- r-
0
0
II
'I
0
0
-t0CLE~
-
/ ....-;~C
IJ " 250
100
k- I-
-
-
t--
r-r-:-
V
TJ" +1000 C
f - 60 Hz
I
-~UR~E IS PIREC~O~O fN10 tWOW~O
50
1.0
I
2.0
3.0
5.0
7.0
10
By RA1~D C~R~E~TI
20
50
30
70 100
NUMBER OF CYCLES
FIGURE 5 - CHARACTERISTICS AND
SYMBOLS
0
+1
2.0
1.0
-v _
REVERSE
BLOCKING
REGION
IH-
•
~~~f;I:I:D;R~M~-~~~~~~~
o.7
+V
IRRM
-0.5
O.3
0.4
•
FORWARD
BREAKOVER
POINT
•
1(: VT
2.B
2.0
1.2
3.6
5.2
4.4
REVERSE
AVALANCHE
REGION
6.0
-I
IVDRM
FORWARD
BLOCKING
REGION
vr.INSTANTANEOUS ON-STAIE VOLTAGE (VOLISI
FIGURE 6 - THERMAL RESPONSE
-'
~C
1.0
O.7
5
O.
-
:r: w O.3
I-
t-N
!z ~
O.2
W:E
0;",
....... ....-
~~
O. 1
~ ~ 0.0 7
>2
~ ~ 0.0 5
1.L.::3
0.0 3
u.",
w
-'2
ZOJC(U" ,ltl-
f'l II IOI~
0.0 2
0.0 1
0.05
I
0.1
0.2
0.5
1.0
2.0
5.0
10
7-100
20
I
II
50
II
100
200
500
lk
2k
5k
2N6167 thru 2N6170
FIGURE 7 - TYPICAL GATE TRIGGER
CURRENT
FIGURE 8 - TYPICAL GATE TRIGGER
VOLTAGE
20
!
I-
E5
~
'"w
'"'"a;
10
1.0
;-......,
.........
1.0
o
'"'"
=:i
o
'"'"
......... 1--.
~
w
w
'"'"
~
2.0
-40
-20
20
40
60
80
100
120
140
TJ. JUNCTiON TEMPERATURE 1°C)
FIGURE 9 - TYPICAL HOLDING CURRENT
OFF 1STATE 1VOLT1GE •
5.0
.!
V-
t'---- r-..
I-
'"z
-.....
13
.........
-.....
§
0
'"
;E' 3.0
2.0
-60
i""--,
'"
0.5
r--.
-40
-20
20
40
60
80
0.4
0.3
-60
-40
-20
0
20
40
60
80
TJ. JUNCTION TEMPERATURE lOCI
20
1.0
['--..,
I-
~ 3.0
~
.........
~ 0.6
.............
!;(
;(
~
0.7
>
I-
,g 10
~
~ 0,8
........
5.0
I
OFF·STATE VOLTAGE· 12 V -
~ 0.9
OF~.sTAT~ VOLTIAGE .12 V
100
120
140
TJ, JUNCTION TEMPERATURE 1°C)
7-101
100
120
140
2N6236
thru
2N6241
SILICON CONTROLLED
RECTIFIERS
4.0 AMPERES RMS
30 thru 600 VOLTS
REVERSE BLOCKING TRIODE THYRISTORS
PNPN devices designed for high volume consumer applications
such as temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation is
important.
•
•
•
•
Passivated Surface for Reliabiiity and 'Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad'" Construction for LowThermal Resist·
ance, High Heat Dissipation and Durability
• Recommended Electrical Replacement for C 106
MAXIMUM RATINGS ITC
~ 110°C unless otherwise noted.)
-Repetitive Peak Forward and Reverse
Blocking Voltage INote 1)
11/2 Sine Wave)
2N6236
!RGK ~ 1000 ohms,
2N6237
0
. TC ~ -40 to +110 C)
2N6238
2N6239
2N6240
2N6241
VORM
-Non-Repetitive Peak Reverse Blocking Voltage
VRSM
.. Average On-5tate Current
IT C ~ -40 to +900 C)
Unit
Volts
30
50
100
200
400
600
VRRM
Volts
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
11/2 Sine Wave,
RGK ~ 1000 ohms,
TC = -40 to +1100 C)
•
Value
Symbol
Rating
50
100
150
250
450
650
Amp
ITIAV)
2.6
1.6
ITC = +1000 C)
·Surge On-State Current
1112 Sine Wave, 60 Hz, T C ~ +900 C)
11/2 Sine Wave, 1.5 ms, T C = +900 C)
Amp
ITSM
25
35
12,
2.6
A 2s
PGM
0.5
Watts
PGIAV)
0.1
Watt
Peak Forward Gate Current
IGM
0.2
Amp
Peak Reverse Gate Voltage
VRGM
6.0
Volts
TJ
-40 to +110
°c
T stg
-40 to +150
°e
6.0
in.lb
Circuit Fusing
ITC
=-40 to
110°C, t
= 1.0 to 8.3 ms)
·Peak Gate Power
(Pulse Width ~ 10 ).IS, TC
=90°C)
* Average Gate Power
It
=8.3 ms, TC = 900C)
·Operating Junction Temperature Range
·Storage'Temperature Range
Mounting Torque
(Note 2)
THERMAL CHARACTERISTICS
Characteristic
·Thermal Resistance. Junction
to Case
Thermal Resistance Junction
~o
Symbol
Min
Max
Unit
RaJC
-
3.0
°elW
RaJA
-
75
°CIW
Ambient
·Indicates JEDEC Registered Data.
"'Trademark of Motorola Inc.
7-102
STYLE 2
PIN 1. CATHODE
2. ANODE
3. GATE
MILLIMETERS
INCHES
MIN MAX
DIM MIN MAX
A 10.80 11.05 0.425 0.435
7.49
7.75 0.295 0.305
B
2.41
2.67 0.095 0.105
C
0.51
0.66 0.020 0.026
0
F
2.92
318 0.115 0.125
2.31
2.46 0.091 0.097
G
1.27
2.41 0.050 0.095
H
0.64 0.D15 0.D25
J
0.38
K 15.11 16.64 0.595 0655
30 TYP
3"TYP
M
Q
4.01 0.148 0.158
3.76
1.40 0.045 0.055
R
1.14
S
0.64
0.89 0.025 0.035
3.68
3.94 0.145 0.155
U
V
1.02
0.040
CASE 77·04
2N6236 thru 2N6241
ELECTRICAL CHARACTERISTICS (Tc = 25°C and RGK
~ 1000 ohms unless otherwise noted)
Characteristics
Svmbol
·Peak Forward Blocking Current (Note 1)
(Rated VORM, TC = 110°C)
IORM
·Peak Reverse Blocking Current (Note 1)
IRRM
(Rated VRRM, TC
= 110°C)
·Peak Forward "On" Voltage
(lTM
= B.2 A
Peak, Pulse Width
IGT
Gate Trigger Voltage (Continuous del
VGT
(Source Voltage = 12 V, RS = 50 Ohms)
'IVAK = 12 Vdc, RL = 24 Ohms, TC = -~C)
Gate Non·Trigger Voltage
= Rated VORM, RL = 100 Ohms, TC = 110°C)
= 12 Vdc,
IGT
TC
TC
= 25°C
= -40°C
*Total Turn-On Time
-
200
-
-
200
-
-
2.2
-
-
200
500
Forward Voltage Application Rate
V ORM ' TC
Unit
/lA
/lA
Volts
/lA
-
Volts
-
-
1.0
0.2
-
-
-
-
5.0
10
-
-
2.0
-
10
-
Volts
rnA
/lS
tgt
(Source Voltage = 12 V, RS = 6.0 k Ohms)
(lTM = B.2 A, IGT = 2.0 rnA, Rated VORM)
(Rise Time = 20 ns, Pulse Width = 10 /ls)
= Rated
-
IH
= 2.0 rnA)
-(Initiating On-State Current = 200 mAJ
1VO
Max
VGO
Holding Current
(V AK
TVp
VTM
= 1 to 2 ms, 2% Outv Cvcle)
Gate Trigger Current (Continuous del (Note 3)
(VAK = 12 Vdc, RL = 24 Ohms)
'(VAK = 12 Vdc, RL = 24 Ohms, TC = -40°C)
(VAK
Min
dv/dt
= 110°C)
V//ls
*Indicates JEDEC Registered Data
NOTES:
1. Ratings apply for zero or negative gate voltage. Devices shall
not have a positive bias applied to the gate concurrently with a
negative potential on the anode. Devices should not be tested
with a constant current source for forvvard or reverse blocking
capability such that the voltage applied e':tceeds the rated
block ing voltage.
2. Torque rating applies with use of torque washer ('Shakeproof
WD19523 or equivalent). Mounting torque in e)(cess of 6 in. lb.
does not appreciably lower case-to-sink thermal, resistance.
Anode lead and heatsink contact pad are common. (See
AN·290 B)
For soldering purposes (either terminal connection or device
mounting), soldering temperatures shall not 8)(ceed +225 0 C.
For optimum results, an activated flux (oxide removing) is
recommended.
3. Measurement does not include RG K current.
CURRENT DERATING
FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE
FIGURE 1 - MAXIMUM CASE TEMPERATURE
110 =-..,--.-~--,--..,..--,--,--..,
ITlAV). AVERAGE FORWARD CURRENT (AMPI
ITIAV), AVERAGE FORWARD CURRENT (AMPI
7-103
•
2N6342 thru 2N6349
MAC 220 series
MAC 221 series
MT20---...fO:~G
OMT1
-I~----------------------------------------~
TRIACS
BIDIRECTIONAL TRIODE THYRISTORS
... designed primarily for full·wave ac control applications. such as
light dimmers. motor controls. heating controls and power supplies;
or wherever full·wave silicon gate controlled·solid·state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Blocking Voltage to 800 Volts
• All 'Diffused and Glass Passivated Junctions for Greater
Parameter Uniformity and Stability
• Small. Rugged. ThermowaUA. Construction for Low Thermal
Resistance. High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342. 2N6343.
2N6344. 2N6345. MAC220 Series) or Four Modes (2N6346.
2N6347. 2N6348.2N6349.MAC221 Series)
• For 400 Hz Operation. Consult Factory
• 12 Ampere Devices Available as 2N6342A thru 2N6349A
8 AMPERES RMS
50-800 VOLTS
MT2
MTl
MT2
G
MAXIMUM RATINGS
Symbol
Rating
·Peak Repetitive Off-State Voltage
IT J = -40 to +100o CI
~
•
Value
Unit
Volts
VORM
Sine Wave 50 to 60 Hl, Gate Open
MAC220·2.MAC221·2
MAC220·3.MAC221·3
2N6342.2N6346
MAC220·5.MAC221·5
2N6343.2N6347
'MAC220·7.MAC221·7
2N6344.2N6348
MAC220-9.MAC221·9
2N6345.2N6349
ITC
*RMS On-State Current
Full Cycle Sine Wave 50 to 60 Hz ITC
50
100
200
300
400
500
600
700
BOO
= +BOoC)
IT(RMS)
8.0
4.0
Amp
ITSM
100
Amp
12 t
40
A 2s
= +900 C)
"Peak Non-Repetitive Surge Current
lOne Full Cycle, 60 Hz, TJ = +BOOC)
preceded and followed by 10 Rated Current
Circuit Fusing
IT J
= -40 to +IOOoC. t = 1.0 to B.3 ms)
·Peak Gate Power CTC= +80o C,Pulse Width;: 2.0jJS)
PGM
20
Watts
PGIAV)
0.5
Watt
"Peak Gate Current
IGM
2.0
Amp
·Peak Gate Voltage
VGM
10
Volts
TJ
-40 to +100
°c
°c
• Average Gate Power IT C = +BOoC, t
= 8.3 ms)
·Operating Junction Temperature Range
"Storage Temperature Range
T
stg
-40 to +150
THERMAL CHARACTERISTICS
Characteristic
.. Thermal Resistance. Junction to Case
I
Symbol
I
M..
I
Unit
I
ROJC
I
2.2
I
°C/W
-Indicates JEOEC Registered Data.
ATrademark of Motorola Inc.
7-104
STYLE 2:
PIN I. MAIN TERMINAL I
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
MILLIMETERS
INCHES
MIN MAX MIN MAX
14.23 15.87 0.560 0.625
B
9.16 10.66 0.380 0.420
C
3.56 4.82 0.140 0.190
D
1.14 0.020 0.045
0.51
F
3.531 3.733 0.139 0.147
G
2.29 2.79 0.090 0.110
H
.35
- 0.250
J
0.31 1.14 0.012 0.045
K
1270 14.27 0.500 0.562
L
0.045 0.070
14 1.71
N
4.83 5.33/ 0.190 0.210
Q
2.54 3.04 0.100 0.120
2.04 2.92
0.080 0.115
R
S
0.020 0.055
0.51 1.39
T
5.85 6.85 0.230 0.270
CASE 221'()2
TO·220AB
All JEDEC dimenSions and notes apply
DIM
A
-
2N6342 thru 2N6349, MAC220 series, MAC221 series
ELECTRICAL CHARACTERISTICS (TC = 25°C, and Eithar Polarity of MT2 to MTt Voltage, unless otherwise noted)
Symbol
Min
Typ
Max
Unit
• Peak 'Off-8tate Current
Vo - Rated VORM@TJ= 100°C, Gat. Open
IORM
-
-
2.0
mA
"Peak On-8tate Voltage
'TM = 11 A Peak; Pulse Width = 1.0 to 2,0 ms. Duty Cycle:S2.0 %
VTM
-
1.3
1.55
Characteristic
Gate Trigger Current, Continuous de
Vo
(+), G(+)
(+). GH
H, GI-)
H, G(+)
mA
IGT
= 12 vcic, RL = 100 Ohms
Minimum Gate Pulse Width
MT2
MT2
MT2
MT2
Volts
= 2.0 IJ.S
-
All Types
2N6346 thru 49,MAC221
All Types
2N6346 thru 49.MAC221
"MT2 (+), G(+); MT2 H. GH TC = -400C All Types
"MT2 (+), GH; MT2 H, G(+I TC = -40°C 2N6346 thru 49,MAC221
Gate Trigger Voltage. Continuous de
50
75
50
75
-
100
125
Volts
VGT
Vo = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2.0 I'S
MT2 (+1, G(+) All Tvpes
MT2 1+), GH 2N6346 thru 49. MAC221
MT2 H, GH All Tvpes
MT2 H. GI+) 2N6346 thru 49, MAC221
-
0,9
0.9
-
1.4
2.0
2.5
2.0
2.5
-
-
-
2,5
3,0
0.2
0.2
-
-
-
6.0
-
40
75
tgt
-
1.5
2.0
I'S
dv/dtlc)
-
5.0
-
VII'S
"MT2 (+1, G(+I; MT2 (-I, G(-I TC = -40°C All Types
"MT2 1+1, GH; MT2 H, GI+) TC = -40°C 2N6346 thru 49, MAC221
Vo = Rated VORM, RL = 10k Ohms, TJ = 100°C
"MT2 1+1, GI+); MT2 H, GH All Types
"MT2 1+), GH; MT2 H, GI-) 2N6346 thru 49, MAC7.21
·Holding Current
Vo = 12 Vdc, Gate Open
'T= 200mA
12
12
20
35
}
mA
'H
Te = 25°C
"Te = -40°C
*Turn.Qn Time
1-1
Vo = Rated VORM, ITM = 11 A,
IGT = 120 mA, Rise Time = 0.1 I'S,
Pulse Width = 2.0 I'S
Critical Rate of Rise of Commutation Voltage
Vo = Rated VORM, 'TM = 11 A,
Comroutating di/dt = 4.3 Alms,
Gate Unenergized, TC =BOoe
•
·Indicates JEDEC Registered Data
FIGURE 1 - RMS CURRENT DERATING
FIGURE 2 - ON-8TATE POWER DISSIPATION
w
'"
.;;
"'>
w"
4.0 f---+--t--+-'R'9'~E7"t""'''-b~+-_l
~
2.0f---+-___~~~~_F-+--t_-+-_l
O~~~_~~~jo--~-~~~~-~-~
o
IT(RMSI, RMS ON·STATE CURRENT (AMPI
1.0
2.0
3.0
4.0
5.0
6.0
'TlRMS), RMS ON-5TATE CURRENT (AMP)
7-105
7.0
8.0
2N6342 thru 2N6349, MAC220 series, MAC221 series
FIGU~E
~
..........
~
~
ffi to
0.8
0-
~
......... J
......
12~
'"
I
-60
-40
-20
~
'"w
'"'"
-
3/
0.4
~ 20
~
~ 10 QUADRANT
'"
20
40
60
80· 100
TJ. JUNCTION TEMPERATURE (OCI
50
fi
120
140
~ r-......
[>
I;;>
!- - ~ r: ~ ~ r--.....
-40
"""'"100
-20
20
40
60
80
TJ. JUNCTION TEMPERATURE (OC)
!
~
,
.........
7.0
~ 5.0
§
.........
"'-
........
"/ K
"'-
r-....... .........,
MAIN TERMINAL #2
o
prSITIV~
'" 3.0
:;i
25 0 C
10
7.0
140
' / MAIN .TERMINAL #1
POSITIVE
1'l
1/
TJ=100oC
........... ~ i'...
10
ffi
j'f'
LO
120
GATE OPEN
..........
......
v
,
FIGURE 6 - TYPICAL HOLDING CURRENT
~
30
~
............
20
70
;
~
..... r-.,.
..........
.....
5.0
-60
FIGURE 5 - ON-STATE CHARACTERISTICS
Ii:
.......
r-...::
'"~. 7.0
r::::::=:
100
..
O~.STAiE VOl~AGE =112 v-
. . . . r--...,
"- "-
~
J
I'".;;::'"
.......
1 ?'"-- ;:::::::: t:,..,
. / -..;;: ~
QUADRANTS
.
'" 0.6
~ 30
dUAORiNT 4
............
K
<
I
I
..........
~
~ 1.2
;
50
OFIF.sTA~E VOLiAGE = \2 v-
1.6
~ 1.4
w
'"~
FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
3 -TYPICAL GATE TRIGGER VOLTAGE
1.8
I
2.0
-60
III
-40
-20
5.0
20
40
60
80
TJ. JUNCTION TEMPERATURE (DC)
100
120 140
1'l
3.0
I
Z.O
FIGURE 7 - MAXIMUM NON-REPETITIVE SURGE CURRENT
100
~
1.0
~
7
0-
O. 5
::::>
60
0.3
'"'"~
40
0.2
~
~
~
"""---l
I I--L
80
(\1
O. 1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
VTM.INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)
I
20
f----
TJ = 1000 C
f ~ 60 Hz
I
I----- SUfg e is prectded ani fOlllwed
rv ratd cur nt
o
1.0
2.0
3.0
NUMBER OF CYCLES
7-106
-r-. r-
-CYCLE -
'"
E
-r-.-
\J
'w"'
:E
Ir\
5.0
7.0
10
2N6342 thru 2N6349, MAC220 series, MAC221 series
FIGURE 8 - TYPICAL THERMAL RESPONSE
10
o.s
-- -
~
~ 0.2
~
01
~
o
;00
os
I
ZOJCIII ~ rltl
O
ROJC
0.02
00 I
0.1
0.2
o.s
1.0
2.0
s.o
so
20
100
200
soo
1.0 k
2.0 k
S.O k
10 k
I,TIMElmsl
•
7-107
2N6342A
thru
2N6349A
MT2
O----t,;;~G
TRIACS
12 AMPERES RMS
2oo-BOO VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for hill-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid·state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Blocking Voltage to 800 Volts'
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, ThermowattA Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342A, 2N6343A,
2N6344A, 2N6345A) or Four Modes (2N6346A, 2N6347A,
2N6348A, 2N,6349A)
e For 400 Hz Operation, Consult Factory
.8 Ampere Devices Available as 2N6342 thru 2N6349
MT2
MT1
MT2
G
MAXIMUM RATINGS
Rating
'Peak Repetitive Off-State Voltage
(TJ = -40 to +1100C)
. Y.. Sine Wave 50 to 60 Hz. Gate Open
•
Symbol
2N6342A, 2N6346A
2N6343A. 2N6347 A
2N6344A, 2N6348A
2N6345A, 2N6349A
*RMS
On~State
Current
(Full cycle, Sine Wave,
50 to 60 Hz)
Value
VORM
200
400
600
SOO
Amp
IT(RMS)
TC = +soOe
TC = +950 e
·Peak Non·Repetitive Surge Current
(One Full Cycle,60 Hz. T C = +800 e.
Unit
Volt.
12
6.0
ITSM
120
Amp.
DIM
Preceded and Followed by Rated Current!
Circuit Fusing
(TJ ~ -40 to +1100 C. t = 1.0 to S.3 m.)
'Peak Gate Power (TC=+800 C. Pulse Width = 2.0",
• Average Gate Power (T C = +800 C. t = 8.3 ms)
·Peak Gate Current
·Peak Gate Voltage
·OperatingJunction Temperature Range
·Storage Temperature Range
12 t
59
A2.
PGM
PG(AV)
IGM
VGM
TJ
Tstg
20
0.5'
2.0
.,0
-40 to +110
-4010 +150
Watt.
Watt
Amp
Volts
uc
°c
THERMAL CHARACTERISTIC
Characteristic
·Thermal Resistance,Junction to Case
STYLE 2:
PIN I. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
Symbol
R9JC
Max
2.0
·'ndicates JEOEC Registered Data.
jl,Trademark of Motorola Inc.
7-108
Unit
°e/W
A
B
C
D
F
G
H
J
K
L
N
0
~
S
T
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
14.23 15.B7 0.560
9.66 10.66 0.3BO
3.56 4.B2 0.140
0.51
1.14 0.020
3.531 3.733 0.139
2.29 2.79 0.090
6.35
0.31 1.14 0.012
12.70 14.27 0.500
0.045
1.77
0.190
4.B3 5.33
0.100
2.54 3.04
2.04 2.92
O.OBO
0.020
0.51 1.39
0.230
5.B5 6.B5
CASE 221·D2
-
0625
0.420
0.190
0.045
0.147
0.110
0.250
0.045
0.562
0.070
0.210
0.120
0.115
0.055
0.270
TO·220 AB
All JEDEC dimenSions and notes apply
2N6342A thru 2N6349A
ELECTRICAL CHARACTERISTICS (TC = 25 0 unl.ess otherwise noted)
Characteristic
·Peak 01f-5tato Current
Vo
= Rated VORM,TJ = II0oC, Gate Open
• Peak On-State Voltage (Either Direction)
ITM
= 17 A
Peak; Pulse Width
= 1.0 to 2.0 ms, Duty CycleS2.0 %
Symbol
Min
Typ
Max
Unit
IORM
-
-
2.0
mA
VTM
-
1.3
1.75
Volts
Gate Trigger Current. Continuous de
Vo ~ 12 Vdc, RL = 100 ohms
Minimum Gate Pulse Width
rnA
IGT
= 2.0 p.s
-
MT2 1+1, GI+I All Types
MT2 1+1, GI-) 2N6346A thru 2N6349A
MT2 1-1, GI-I All Types
MT2 1-1, GI+I 2N6346A thru 2N6349A
-
-
-
*MT2 1+1, GI+I; MT2 I-I, GI-I TC = -400C All Types
*MT2 1+1, GI-I; MT2 I-I, GI+I TC = -40°C 2N6346A thru 2N6349A
"Peak Gate Trigger Voltage
Vo = 12 Vdc, RL = 100 ohms
6.0
6.0
10
25
50
75
50
75
-
100
125
-
Volts
VGT
Minimum Gate Pulse Width::: 2.0 fJ.S
-
MT2 I+l. GI+I All Types
MT2 1+1, GI-I 2N6346A thru 2N6349A
MT2 I-I, GI-I All Types
MT2 1-1, G 1+1 2N6346A thru 2N6349A
*MT2 1+1, GI+I; MT2
*MT2 1+1. GI-I; MT2
-
1-1, GI-I TC = -40°C All Types
1-1. GI+I TC = -40°C 2N6346A thru 2N6349A
2.0
2.5
2.0
2.5
-
2.5
3.0
-
-
0.2
0.2
-
-
-
6.0
-
40
75
tgt
-
1.5
2.0
dv/dtlc)
-
5.0
-
Vo = Rated VORM, RL = 10k ohrns\ TJ =100o C
*MT2 1+1. GI+I; MT2 1-1, GI-) All Types
*MT2 1+1. GI-I; MT2 1-1, GI+I 2N6346A thru 2N6349A
Holding Current (Either Direction)
-
rnA
IH
}
VO= 12 Vdc, Gate Open
IT= 200mA
0.9
0.9
1.1
1.4
TC = 25°C
*TC = -40°C
*Turn-On Time
ps
Vo = Rated VORM, ITM = 17A
IGT = 120mA,RiseTime=0.1 ps,
Pulse Width = 2.0ps
Critical Rate of Rise of Commutation Voltage
Vo = Rated VORM, ITM = 17A, Commutating
Vips
di/dt = 6.5 Alms, G~te Unenergized
TC = BoDe
·'ndicates JEDEC Registered Data
FIGURE I - RMS CURRENT DERATING
......
11 0
~
w
10 0
~~
~~ ~ ~
ii'li
_
90
I-
w
'";:!
c.3 80
~o.
LI
60·
K~~~
'"=>
-~
_.1.
.
I-
'"
90·
I" ~ ~
t:::
""
'~
de
o
2.0
4.0
6.0
lJ.0.-t-180·
;:: ~ r'.
"- ~"~
"'- ~ ~
,=CONOUCTION ANGLE
70
FIGURE 2 - ON-5TATE POWER DISSIPATION
0
S.O
10
.........
~
12
~
de
i
61--
~
21--
'"
I--
~
.1,
>.
«
:>
0:
-J't+
4.0
~ ./' V V \. V
:2: ~ ." Ir:: 11:::: ISD"
120
TJ'"O·C
8.0
V
~ 'jV V
~ ..Ll [L V
.·CONOUCTION ANGLE
w
'"ffi
I,/:V
v: V
A~ :% ~ ~ ~O.
d. ~ ~ ~ 60·
..... ~ :@: ~
,'3D"
0
14
2.0
ITlRMS). RMS ON-5TATE CURRENT. lAMP)
4.0
6.0
S.O
10
ITIRMS), RMS ON-5rATE CURRENT lAMP)
7-109
12
14
2N6342A thru 2N6349A
FIGURE 3 - TYPICAL GATE TRIGGER VOL TAGE
FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
:----..
50
1.8
OFIF-STAiE VOL iAGE: \2 V1.6
I
I
S 1.4
~
..............
w
'"~
1.2
o
'"tt:
~
~ ~
?""- :::::"'=:::
0.6
r- QUADRANTS
0.4
-60
I
P3-:'"~
~
.......
r---:::::: ~ .....
FF!---r-r-12L'
-
~~
20
40
60
80
-20 TJ: JUNCTION TEMPERATURE IDC)
100
120
140
.......
~~
.........
--.........
>< ~ ~ R: <..
-40
-20
.........
20
40
60
80
TJ. JUNCTIOll TEMPERATURE IDC)
20
/
!
//
lO
l
TJ:l00DC
10
7.0
I
~
10
I'-......
I-
#
30
120
140
GATE OPEN
.......
"...-
50
100
FIGURE 6 - TYPICAL HOLDING CURRENT
FIGURE 5 - ON-8TATE CHARACTERISTICS
70
:>.
........
I
50
-60
100
~
~ 7.0
/"
'""........
~ 5.0
..........
MAIN TERMINAL 02
,
~
prSITIVf
~. 3.0
I'-...
..........
:--..
.......
I
2.0
-60
/I
........
/
.~:r
25DC
MAIN TERMINAL ~1
POSITIVE
/
""',...
-40
-20
5.0
•
""~
1;:::
I
-40
.........
-.......:
i'-.
L
......... ./
.......
~
0.8
I-
w
;}
...........
OFIF'STAiE VOL+AGE: 112 V-
--.........
~
rlUADRiNT 4
.........
>
~ 1.0
~
.......
20
40
60
80
TJ. JUNCTION TEMPERATURE IDC)
100
120
140
3.0
I
2.0
FIGURE 7 - MAXIMUM NON·REPETITIVE SURGE CURRENT
100
,.'"
1.0
:@
:'>
~
I "'t--l
80
60
r\
40
I-CYCLE -
f-
~
;:;
O. 7
t:"
o. 5
\J
w
~
~
o. 3
""
~
~
O. 1
0.4
0.8
1.2
1.6
2.0
24
2.8
3.2
36
4.0
4.4
7-110
I--
TJ: 100 DC
20
r---- f ~ 60 Hz I
or - - surge IS preTded an, tailored
10
20
tryed cur
30
NUMBE R OF CYCLES
IITM. MAXIMUM INSTANTANEOUS ON·STATE VOLTAGE IVOLTS)
- --
I
~
O. 2
1(\ -- i-- .....
5.0
nt
70
10
2N6342A thru 2N6349A
FIGURE 8 - TYPICAL THERMAL RESPONSE
1.0
w
~
O.S
'"
l;;
~
a: 3" 0.2
~
~~
~~
>-'"
"''''
>-0
f5
;;;
0.1
--
ZOJClti • rltl
0
ROJC
~O.05
z
~
I-
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0k
2.0k
5.0 k
10 k
t,TlMElmsi
•
7-111
2N6394 MCR220-S
thru MCR220· 7
2N6399 MCR220-9
G
o>----1~
..d--o
A
K
SILICON CONTROLLED
RECTIFIERS
12 AMPERES RMS
50-800 VOLTS
REVERSE BLOCKING TRIODE THYRISTORS
designed primarily for half-wave ac control applications, such
as motor controls, heating controls and power supplies.
A
• Glass Passivated Junctions with Center Gate Geometry for
Greater Parameter Uniformity and Stability
• Small, Rugged, ThermowattA Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Vqlts
K
A
G
*MAXIMUM RATINGS
Symbol
Rating
•
Peak Repetitive Forward and Reverse Blocking
Voltage
2N6394
2N6395
(TJ = -40 to 125°C)
2N6396
MCR220-5
2N6397 '
MCR220-7
2N6398
MCR220-9
2N6399
RMS OnoState Current
TC
(All Conduction Angles)
= 90°C
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave. 60 Hz. TJ = 1250 C)
Circuit Fusing
(TJ
=-40 to +1250 C, t =
VRRM
VORM
Value
Unit
Volts
SO
6I
1
100
200
300
400
SOO
-l
600
.700
800
IT(RMS)
12
Amps
ITSM
100
Amps
12 t
40
A 2s
Forward Peak Gate Power
Forward Peak Gate Current
PGM
20
Watts
PG(AV)
0.5
Watt
Amps
IGM
2.0
TJ
-40 to +125
DC
Storage Temperature Range
T stg
1"0 to +150
°c
Symbol
Max
Unit
ROJC
2.0
°C/W
THERMAL CHARACTERISTICS
Characteristic
Dd~EG
1-.
PIN 1. CATHODE
2.ANOOE
3. GATE
4', ANOOE
AU JEOEC dmtellstOns ami
nOle~
MILLIMETERS
Operating Junction Temperature Range
Thermal Resistance, Junction to Case
-I'I-H,L
R
STYLE 1:
1.0 to 8.3 ms)
Forward Average Gate Power
H
S[C~ A-A
DIM
MIN
MAX
MIN
7-112
MAX
0.560 0625
1423 1581
6 1066 03BO 0420
0140 0190
356 482
0
1.14 0.020 0045
051
F
3531 3.733 0139 0141
G
0090 0110
229
279
..
H
0.250
635
1.14 0.012 0045
031
K
0.500 0562
1270 14.27
L
4 177
00'5 0010
0190 0210
N
.83 5.33
Q
0100 0120
25' 30.
0080 0.115
R
2.04 292
S
0020 0055
. I 139
0230 0270
C..!-c...i.B_5 6.85
A
B
C
•
CASE 221-02
TO 220 AB
• Indicates JEDEC Rogist8red Data.
"Trademark of Motorola Inc.
,1!lPly
INCHES
2N6394 thru 2N6399, MCR220-5, MCR220-7, MCR220-9
ELECTRICAL CHARACTERISTICS;(TC = 25°C unless otherwise noted.)
Symbol
Characteristic
·
'Peak
Forward Blocking Current
'
(VO = Rated VORM@TJ= 125°C)
• Peak Reverse Blocking Current
Min
Typ
Max
Unit
IORM
-
-
2.0
mA
'RRM
-
-
2.0
mA
VTM
-
1.7
2.2
Volts
IGT
-
5.0
30
mA
-
0.7
1.5
0.2
-
-
6.0
40
mA
-
1.0
2.0
jlS
-
15
35
-
50
-
(VR = Rated VRRM@TJ= 125°C)
• Forward "On" Voltage
(lTM = 24 A Peak)
• Gate Trigger Current (Continuous de)
(VO = 12 Vde, RL
=100 Ohms)
• Gate Trigger Voltage (Continuous de)
(VO = 12 Vde, RL = 100 Ohms)
(VO
=Rated VORM, RL
Volts
VGT
Volts
VGO
= 100 Ohms, TJ = 125°C)
• Holding Current
'H
(Vo = 12 Vde)
Turn·On Time
(lTM = 12 A, IGT = 40 mAde, Vo = Rated VORM
tgt
Turn-Off Time (VO = Rated VORM)
(lTM = 12 A,IR a 12 A)
(lTM = 12 A, 'R = 12 A, TJ = 125°C)
tq
Critical Rate-of-Rise of Off-State Voltage
dv/dt
jlS
V/jls
Exponential
(VO = Rated VORM, T J = 125°C)
'IndicatesJEOEC Regrstered Data.
FIGURE 2 - MAXIMUM ON-8TATE POWER DISSIPATION
FIGURE 1 - CURRENT DERATING
a
~130r----.----r----r---'r----r---'r----r---'
a:
~ 125h.~~----~--~--~~--~
_~
ffi
~ 120r-~~~~~--~--~r_--~-
...w
ffi
~ 115
20
18
-
16
14
-
a
A-1"1-
= CONDUCTION
w
10
ffi
8.0
'"
«
"
'~ 105r---_r----r-,,_r~~k-~~~~~--_r--~
:>
~ 100r_--~----r---~--~~~~--~r_--_P~
"'" 6,0
S
~ 4.0
:::>
~ 95r---~----r_--~--~~r_~~~r_~d_--~
2.0
60·
Q
~ 90~0--~1~.0--~2~.0--~3~.0--~~~~J-~~--~~~
300
V
,/
, / ./' /""
TJ
7-113
=125·C
iiP'"
~
~
U
~
M
IT(AV), AVERAGE ON-5TATE CURRENT (AMP)
IT(AV), AVERAGE ON-5TATE CURRENT (AMP)
~
/ / / ./' . /
V~ /"/ Y
/. ~ I::/'
~~
o~
o
u
~
/
900
ANGLE
~ 12
~ 110r---~--~~~~~~k-~~--~r_--~--~
;;-180·
U
B.O
•
2N6394 thru 2N6399. MCR220-5. MCR220-7. MCR220-9
100
10
V
3D
Ib
V
20
!Z
........,25.C
~
10
.
'"~
65
:E
60
E
z
3.0
Iil
z
2.0
.......
.......
F'
I--- SURGE IS PRdcEOED AND FOLLOWED
BY ~ATEO C~RRENT
2.0
1.0
!;(
c
~
...... .......
5
50
::>
'-' 5.0
w
I;;
~
r--- ......
TJ·'25·C
f· 60 Hz
~ 70
1.0
~
.......... 1-0..
~ 75
I-
ill
85
B80
V
II
Ii:"
~
V
.............
~ 90
V
50
I"'--...
£' 95
./
TJ = 25·C
,..
FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 3 - ON-STATE CHARACTERISTICS
.,l1li
3.0
4.0
NUMBER OF CYCLES
6.0
B.O
10
<[
IZ
<[
In
,... 1.0
~
.C- 0.1
0.5
0.3
0.2
,.
4.4
1.2
2.0
2.B
3.6
5.2
lITH,lNSTANTANEOUS ON-5TATE VOLTAGE IVOLTS)
6.0
FIGURE 5 - THERMAL RESPONSE
'-'
I. 0
O. 1
o. 5
~a
o. 2
w
iii~
. I
~~
O. 3
..-
ffi ~ o. 1
"',..
:: ~ 0.01
ffi -
0.05
~
....
0.03
0.02
u;
-=
-~
ZOJClt) = ROJC. rlt)
./
.".
0.0 1
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
2~
30
50
t,TIMEII)'I')
7-114
100
200
300
500
1.0k
2.0k 3.0k 5.0k
10k
2N6394 thru 2N6399, MCR220-5, MCR220-7, MCR220-9
TYPICAL CHARACTERISTICS
FIGURE 6 - PULSE TRIGGER CURRENT
300
I .1111
200
~
.g
~
100
I
FIGURE 7 - GATE TRIGGER CURRENT
I
IIIII
\
!;:(
30
'" 20
:''"1i
~~
...........
....
iii
\
f\
~
I
0.7
...... 1"-
TJ:-40oC
1:l
I"-
25 0 C
'"
~
'"a;
1000 e
!;:(
",
10
0.5
10
20
PULSE WIDTH I",)
-'"
~
-""'"
I.............
50
100
!E 0.3
-40
200
40
80
TJ, JUNCTION TEMPERATURE IOC)
DF~.STATJ VOLTAGE: I~ V-
«
1
O. 9
.......
~
0.8
~
a;
....
~
«
~
.......
1:l
.......
~
W
o. 7
.........
.........
'"~ o. 5
0.4
-60
I
I0
'" .....
-20
20
40
60
80
100
120
I
I
.......,
~ 5. 0
.........
.......
:.........
-40
I
b."
:I:
>
160
0
'"z
97. 0
o
.........
0, 6
120
OFF·STATE VOLTAGE· 12 V
1.0
C:;
,
FIGURE 9 - HOLOING CURRENT
0
~
~
.......,
'".....
FIGURE 8 - GATE TRIGGER VOLTAGE
1
o
f"-..
~ 0.5
E
3
0.2
I
I'--......
70
~ 50
W
I
OF~-5TAT~ VOLiAGE: \2 V - r--
f--
OFF-5TATE VOLTAGE: 12 V
I'~
140
TJ, JUNCTION TEMPERATURE IOC)
3. 0
-60
-40
-20
20
40
60
80
TJ,JUNCTION TEMPERATURE IOC)
7-115
r--
100
120
140
2N6400 MCR221-5
thru, MCR221-7
2N6405 MeR2 21-9
G
A
I
Df-~----
~
116
112
"~
108
:E.
104
..
x
"~
,~
~
"- "-~ ~ r-...
\.
"-"- ~'-.
\
"" ,
"I
{:
0:
=
300
60· I
I
1.0
2.0
3.0
CONOUCTION
ANGLE
~
\.
>-
~
~
" "-"
120
~
A-1"1-
...."
5.0
6.0
~
........
r-....
de
8.0
"-
90·
'-.
180·
120· ......
I
7.0
"'ffi
>
.
.
8.0
9.0
c::
"'-10
/
V/
V;;
j V>-
u
«~
ANGLE
u
u
~
~
~
M
M
IT(AVI. AVERAGE ON·SlATE FORWARO CURRENT (AMPI
7-117
W
•
2N6400 thru 2N6405, MCR221-5, MCR221-7, MCR221-9
FIGURE 3 -ION-STATE CHARACTERISTICS
200
FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
160
~
~
100
~ 150
;/'"
§
B140
70
..
//
50
::E
~
30
~
20
1::
~
~ 130
/
~'"
j
TJ =125'C /I
ti 120
r
10
~
70
z
5.0
~
o
PCh
'"
I"
w
~
o
'"'"~
'"" ""-
~
""- ..........
TJ = 125'C
-
'i 6OHZ
r-.... ....,
SURGE IS PRECEDED AND
I--- FOLL~WED BYIRATE~ CUR1RENT
3.0
2.0
V/25'C
4.0
6.0
B.O
10
NUMBER OF CYCLES
"'"
zffi 3.0
~
~
2.0
!;
:i
.t:"
1.0
0.7
0.5
0.3
0.2
U
M
U
U
U
U
U
U
U
U
U
VfM,INSTANTANEOUS ON·STATE VOLTAGE IVOLTS)
•
FIGURE 5 - THERMAL RESPONSE
1.0
w
~
~
iii
0.7
0.5
0.3
I
~c 0.2
~~
ffi
~
",::E
.;.
f--'"
O. 1
""'"
f--.
)
,
ZOJCI.) = ROJC. ,I')
~ ~ 0.01
0.0 5
ffi -
u;
~
0.03
~
0.02
"'"
0.0 1
0.1
:/
0.2
0.3
0.5
1.0
2.0
3.0
5.0
20
t,
30
50
TIME (ms)
7-118
100
200 JOO
500
1.0k
2.0k J.Ok 5.0k
10 k
2N6400 thru 2N6405, MCR221-5,MCR221-7, MCR221-9
TYPICAL TRIGGER CHARACTERISTICS
FIGURE 6 - PULSE TRIGGER CURRENT
FIGURE 7 - GATE TRIGGER CURRENT
. 100
=
70
_
'\.
.............
....
20
RL=50n-
"
Ti= -40°C
'\.
.'"
13
OFF's,.ATEIVOLT~GE = IJ V
OFF·STATE VOLTAGE - 12 ~
RL' 50 n-
50
1
§ 30
2.0
10
CC; 7.0
w
....
:: 3.0
.~ 2.0
I. 0
0.2
"
25°&
~ 5.0
rm;C
0.5
1.0
2.0
5.0
10
'" "'"
0
1111
20
50
100
2.0
-60
200
-40
20
-20
PULSE WIDTH Im,l
40
60
.......
..........
80
100
120
140
TJ. JUNCTION TEMPERATUR E lOCI
FIGURE 8 - GATE TRIGGER VOLTAGE
FIGURE 9 - HOLDING CURRENT
1.0
20
~
OFF1TATE lOLT)GE - I L RL = 50 n
o
~ 0.8
..............
'"~
g
OF1F.sTAT1E VOLjAGE = 112 V
RL=50n-
~
;: 10
.......
ffi 0.6
........
to
to
~
w
!C
..........
........
..........
~
B 1.0
........
r-....
'"z
.........
0.4
9o 5.0
~
......
['.....
:z:
......... ~
~
to
,..:
3.0
{;
0.2
-60
2.0
-4D
-20
20
40
60
80
100
.120
~
140
TJ.JUNCTION TEMPERATURE lOCI
-4D
~
0
~
40
00
00
TJ. JUNCTION TEMPERATURE lOCI
7-119
~
~
~
•
2N6504
thru
2N6509
-I'---_ _~_)_ _
AO~~........
~F-~~-O K
_
SILICON CONTROLLED
RECTIFIER
25 AMPERES RMS
50 - 800 VOLTS
REVERSE BLOCKING TRIODE THYRISTORS
· .. designed primarily for half-wave ac control applications. such as
motor controls. heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
A
• Small. Rugged. Thermowatt'" Constructed for Low Thermal
Resistance. High Heat Dissipation and Durability
K
A
• Blocking Voltage to 800 Volts
G
• 300 A Surge Current Capability
"MAXIMUM RATINGS
•
Rating
Peak Repetitive Forward and Reverse
Voltage II)
2N6504
2N6505
2N6506
2N6507
2N6508
2N6509
RMS On-State Current
Average On-State Current ITC +85U C)
Peak Non-Repetitive Surge Current 8.3 ms
11/2 Cvcle. Sine Wave)
1.5ms
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
-
Symbol
Valua
VRRM
VORM
50
100
200
400
600
800
, 25
16
ITiRMS)
TIAV)
ITSM
PGM
PGIAV)
IGM
TJ
Tstg
Unit
Volts
Amps
Amps
Amp.
300
350
20
0.5
2
-40 to +125
-40 to +150
Watts
Watt
Amps
Max
1.5
Unit
°C/W
PIN
uc
°c
"THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
I
Symbol
R9JC
I
11) VORM and VRRM for .11 tYpes can be applied on a continuous dc basis
without incurring damage. Ratings apply for zero or negative gate voltage.
Oevicas should not be tested for blocking capabilitY in a manner such that
the voltage supplied exceads the rated blocking voltage.
"Trademark of Motorola Inc.
• Indicates JEOEC Registered Data.
7-120
STYLE 1,
i: ~~1~~qE
3. GATE
4 ANODE
MILLIMETERS
INCHES
MIN MAX MIN MAX
14.23 15.Bl 0.560 0.625
10.66 0.3BO 0.420
C
.6 4.B2 0.140 0.190
D
1.14 0.020 0.045
0.51
F
3.531 3.133 0.139 0.141
G
2.29 2.19 0.090 0.110
0.250
H
6.35
J
0.31 1.14 0.012 0.045
K
.10 14.21 0.500 0.562
L
0.045 0.010
111
0.190 0.210
N
4.83 5.33
Q
0.100 0.120
2.! 4 3.04
0.080 0.115
.4 2.92
P
S
o 1 1.39 0.020 0.055
T
0.230 0.210
5.85 6.85
CASE 221-02
TO·220AB
All JEDEC dimensions and notes apply
DIM
A
•
-
-
2N6504 thru 2N6509
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unle•• otherwise noted)
Characteristic
·Peak Forward Blocking Current
(VO = Rated VORM@TJ= 125°C)
Min
TVp
Max
Unit
IORM
-
-
2
mA
IRRM
-
-
2
mA
VTM
-
-
1.8
Volts
IGT
-
-
40
75
mA
25
-
1
1.5
Volts
0.2
-
-
IH
-
35
40
mA
'9'
-.
1.5
2
/IS
-
15
35
-
-
50
SVmbol
·Peak Reverse Blocking Current
(VR = Rated VRRM @TJ= 125°C)
" Peak On-State Voltage
IITM = 50 A, P.W." 300 ,.s, Duty Cycle .. 2%)
• Gate Trigger Current (Continuous de)
TC = 25°C
(VO = 12 Vdc, RL = 100 Ohms) TC = -40 oC
*Gate Trigger Voltage (Continuous del
(VO = 12 Vde RL = 100 Ohms, TC = -40°C)
(Vo = Rated VORM, RL = 100 Ohms, TJ = 125°C)
VGT
-Holding Current
(VO
-
= 12 Vdc, TC = 25°C)
Turn·On Time
IITM = 25 A, IGT = 50 mAde, Vo = Rated VORM)
Turn·Off Time (VO = Reted VORM)
IITM = 25 A, IR = 25 A)
IITM = 25 A, IR = 25 A, TJ = 125°C)
/IS
Iq
dv/dt
Critical Rat. of Rise of Off·Stat. Voltag.
(Gata Open, Vo = VORM, Exponential Waveform, TJ = 125°C)
-
V//ls
"Indicates JEOEC Registered Data.
FIGURE 2 - MAXIMUM ON·STATE POWER DISSIPATION
FIGURE 1 - AVERAGE CURRENT DERATING
13 0
~
"'
...'"
:>
~
al...
"'
11 0
~
\
\
"" '"
\
....;
0
'\ "-
~ ..........
\
• =CONDUCTION AINGLE
'\..
""-
• V3D'
""-
60' 1\..90'
II
4
~
-l.1-
r-.....
• =30'\
0
4
• =dONOUCTION ANGLE
"< \
:>
2=f
-l.1-
~~
;3 10
0
.''"'x""
~-E
12 O~ ~
8
)
I
I
I
"-
6
""'-
180'
'-....
8
""'-
"'12
de
16
1/
/'"
90'
/
/V
/ /- / / / .,-V
V~ ~ ~
~ ~ j:/"
oi~ P
20
/
60'
/'
./
= 12SoC
16
IT(AV), AVERAGE ON·STATE FORWARD CURRENT (AMPS)
IT(AV), ON·STATE FORWARO CURRENT (AMPS)
7-121
de
/
TJ
12
180'
20
•
2N6504 thru 2N6509
FIGURE 3 - ONoSTATE CHARACTERISTICS
FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
100
3110
0
~ 275
0
IL-
0
1250cl
0
li
0
v...
cs
~
§
"'"
~ 250
....
--'-
<>
=
iil
!L
~'"
~
25°C
1=
7
V\J0
.........
225
...........
t'-..
i"--.
TC = 85°C
60HZ
r----
fi
..........
200
SURGE IS PRECEDED AND
t--FOL':ltEO BYtATEY CURrENT
f".
175
10
1
5
NUMBER OF CYCLES
I
1
3
I
2
1
,,,
,
.7
.5
.3
i
.2
.1
0.4
!
0.8
1.6
1.2
2.4
2.8
VTM, INSTANTANEOUS VOLTAGE (VOLTS)
II
FIGURE 5 - THERMAL RESPONSE
~
0.7
z
05
iii
cr _
0.2
'"t;;
~c
I--'
03
!.--
",'"
"'~
~~
/-""
o. 1
ZOJCIt)
ROJC .,ltl
"'''' 005
:: ~ 0.0 7
~ ~
u;
~
0.0 3
I-
0.0 2
"
0.0 1
0.1
0.2
0.3
0.5
10
20
t,
30
50
TIME(ms)
7-122
100
200 300
500
1k
2k
3k
k
10
2N6504 thru 2N6509
TYPICAL TRIGGER CHARACTERISTICS
FIGURE 6 - PULSE TRIGGER CURRENT
100
10
OFF·STATE VOLTAGE - 12 V
tr-.--1-I-- r-RL -100 n
h
d' 50
.§
~ :~
~
w
>-
C3
FIGURE 7 - GATE TRIGGER CURRENT
"
l~
........... 1-0..
~
10
T
1.0
:: 3.0
-t
-;lli:
- 1-125°C _.-
t-
.~ 2.0
1.0
0.2
f-
tfIf
IIII
0.5
1.0
2.0
5.0
10
20
OFFkATEIVOLT~GE - ,i v
RL-Ioon -
'"
llL
25°C ~::- t - -
~ 5.0 f--
=
!
TJ - -40°C
----~
2.0
......
--
..........
..........
~
T
-+
'"
i
50
100
200
2.0
-60
-40
-20
PULSE WIDTH Im'l
W
~
"..........
w w
~
I~
~
TJ, JUNCTION TEMPERATURE (OCI
FIGURE 8 - GATE TRIGGER VOLTAGE
FIGURE 9 - HOLDING CURRENT
1.0
20
~
~
......
OFIF.STATIE VOLiAGE _1'2 V
HL-Ioon-
OFF.lTATE lOLT}GE - I L RL-Ioon
0.8
...........
..... 1'--..
'"
~
o
.......
>
~ 0.6
...........
"'
>-
......
0
........
t'-....
w
.........
~ 0.4
"-
.......
..........
...........
........ 1'-
'",..:
3.0
!;:
02
-60
-40
-20
20
40
60
BO
100
120
140
2.0
-60
-40
-20
W
~
W
W
TJ, JUNCTION TEMPERATURE (OCI
TJ,JUNCTIOrl TEMPERATURE (OCI
7-123
~
IW
I~
•
C·35
series
REVERSE BLOCKING TRIODE THYRISTOR
SILICON CONTROLLED·
RECTIFIER
designed primarily for half-wave ac control applications, such
as motor controls, heating controls and power supplies; or whereever half-wave silicon gate-controlled, solid-state devices are needed
• Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
• Blocking Voltage to 800 Volts
35 AMPERE RMS
26-8110 VOLTS
MAXIMUM RATI NGS (TJ • 1250 C unl.u oth.rwls& noted )
Rating
Peak Repetitive Forward and Ravena
Blocking Volt.ge (1)
(TC = -65 to +125 0 C)
C35U
C36F
C35A
C35G
C35B
C35H
C36C
C350
C35E
C35M
C35S
C35N
Symbol
VORM
or
VRRM
,
•
Non-R.petltive P•• k R.verS& Voltage
C35U
ITC = -65 to +125 0 C,
C35F
V < 6.0ms)
C35A"
C35G
C35B
C35H
C36C
C350
C35E
C35M
C35S
C35N
RMS On-Stat. Current (All Conduction Angles)
P•• k Non-R.petltive Surge Current
(On. cycle, 60 Hz)
Circuit Fusing
It 1.0 to 8.3 ms)
VRSM
Value
Unit
Volts
25
50
100
150
200
260
300
400
500
600
700
800
Volts
35
75
150
225
300
350
400
500
600
720
840
960
IT(RMS)
35
Amp
'TSM
225
Amp
. 75
A 2s
Q
P.ak Gata Power
Awrage Gata Pow.r
P.ak RewrS& Gate Voltage
Op.ratlng Junction Temperature Rang.
Storage Temperature Range
MILLIMETERS
MIN MAX
15.34 15.60
14.00 14.20
B
C 26.67 30.23
3.43 4.06
f
2.29 REF
H
J
10.67 11.56
15.75 17.02
K
DIM
12 t
PGM
5
Watts
PG(AV)
0.5
VGRM
TJ
5
Watt
Volts
-65 to +126
Tstg
-65 to +150
THERMAL CHARCTERISTICS
°c
°c
·A
L
II
R
T
INCHES
MIN
MAX
0.614
0.559
1.190
0.160
REF
0.455
0.670
0.604
0.551
1.050
0.135
0.090
0.420
0.620
7~--"",,,,- ~~
1.~ 2.16
1.65 REF
12.73 12.83
~
Th.rm.1 Resistance, Junction to C...
STYLE I:
PIN 1. CATHODE
2. GATE
3.ANOOE
I1t"VORM.nd·VRRM for all types can be appli.d on a contlnuousdc basis without
incurring damage. Ratings applv for zaro or negative gate voltage. O.vlc....hould
not be tested for blocking capability In a mann.r such th.t tha voltage suppllad
axcaods the rated blocking voltage.
CASE 263-03
Similar to T0-48
Char_riotlc
7-124
O.ilII5
0.065 REF
0.501 0.505
C3S Series
ELECTRICAL CHARACTERISTICS
(TJ - 25°C unle.. otherwl.. noted.)
Symbol
Chl_lstlc
Peak Ravena or Forward Blocking Current
(VO - Rated VORM, TC - +1250 C)
(VR - Rated VRRM, TC -12SoC)
C35U,F.A,G
C35B
C35H
C35C
C350
C35E
C35M
C35S
C35N
Average Forward or Revena 810cklng Current
(VO - Rated VORM TC - +12S0C)
(VR = Rated VRRM: TC -12S0C)
C35U,F,A,G
C358
C35H
C35C
C350
C35E
C35M
C35S
C35N
,
IORM
or
IRRM
IORM (AV)
or
IRRM(AV)
IGT
w
-' 60
~«
ii'"
i
y'
.....
40
20
~
~
......
-
-
-
6.5
6
5.5
5
4
3
2.5
2.25
-
2
-
-
2
6
-
-
-
Volts
mA
-
-
3
-
-
100
C35U,i=,M,S,N
10
C35A,G,B,H
C3SC,O,E
25
-
Volts
IH
dvldt
20
mA
VII'S
-
-
FIGURE 2 - POWER DISSIPATION
(HALF-WAVE SINE WAVE)
0
I
de
0
~
/
al.
180·
.....
"....... ......
" '"
."
........
"I
0
........
'l ',,"
I
0
I'..
60. 90. 120.
II
II
w
~
""
180·
u
de
u
n
120· V
91J01/1/
60'// V
V
a-3D·/, YI/ /"
:~
.......
I
I
a"'30 o
u
mA
-
,
'\. ~~
'\
'\
-
-
FIGURE 1 - CURRENT DERATING
(HALF·WAVE RECTIFIED SINE WAVE)
....
-
Unit
mA
.25
Critical Rate of Ri.. of Forward Blocking Voltage
Vo = Rated VORM, TC = +1250C)
. ~ 80
-
-
VGT
Holding Currant
(VO = 24 Vdc, Gate Supply = 10 V, 20 n, 45 "' minimum
pulse width, IT = 0.5A)
J
13
12
11
10
8
6
5
4.5
4
40
80
Gata Trigger Voltage, Continuous de
(VO = 12 Vdc, RL = 50 n, TC = ~50C to +1250 C)
(VO = Rated VORM, RL = 1000 n, TC = 125°C)
.....
-
-
Gate Trigger Current, Continuous de
!ffi 100
-
-
VTM
140
Max
-
PeaR On·State Voltego
(ITt" = 50.3 A peak, Pulse Width'; 1 ms,
Duty Cycle'; 2.0%)
~
~ 120
Typ
-
(VO = 12 Vdc, RL = 50 n)
(VO = 12 Vdc, RL· 50 n, TC = ~50C)
~
Min
L
36
/'1!
V
V
12
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
!/"
/
~
..!,,\;
I
16
20
24
28
32
IT (AV),AVERAGE ON-STATE CURRENT (AMP)
7-125
36
Cl06
series
REVERSE BLOCKING TRIODE THYRISTORS
· .. Glassivated PNPN devices designed for high volume consumer
applications' such as temperature, light, and speed control; process
and remote control, and warning systems where reliability of operation is important.
SILICON CONTROLLED
RECTIFIER
4 AMPERES RMS
15 thru 600 VOLTS
• Glassivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, ThermopadA Construction for Low Thermal
Res"istance, High Heat Dissipation and Durability
MAXIMUM RATINGS
Symbol
Rating
Peak Repetitive Forward and
Reverse Blocking Voltage
RGK =1 kfl
T C = _40° to 110°C
•
C106Q
C106Y
C106F
C106A
C1OS8
C106C
C1060
C106E
C106M
IT(RMS)
Average Forward Current
TA = 30°C
IT(AV)
Peek Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = -40 to +1100 C)
ITSM
>
Unit
15
30
50
100
200
300
400
500
600
~ UBt-1:; t F
f~::11a
::II +
4
Amp
Amp
2.55
12 t
1.5 ms
Peak Gate Power
20
Amp
0.5
A2,
PGM
0.5
Watt
Average Gate Power
Peak Forward Gato Current
PG(AV)
0.1
Watt
IGFM
0.2
Amp
Peak Reverse Gate Voltage
VGRM
6
Volts
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 1)
TJ
-40 to +110
Tstg
-40 to +150
°c
°c
-
6
in. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
Symbol
I
Max
I
I
I
R8JC
I
I
3
I
I
R6JA
G
Volts
OR
VRRM
RMS Forward Current
(All Conduction Angle,)
Circuit Fusing t
Value
VORM
75
NOTE 1. Torque rating applies with use of torque washer (Shakeproof
WD 19523 or equivalent). Mounting torque in excess of 6 in. lb.
does not appreciablv lower case-to·sink thermal resistance. Anode
lead and heatsink contact pad are common. (See AN-290 B)
For soldering purposes (either terminal connection or device mount·
ing), soldering temperatures shall not exceed +225 0 C. For opti·
mum results, an activated flux (oxide removing) is recommended.
Unit
°CIW
°CIW
II
\-,~ --1
_v1H
j
~f
K
L
~;e--oJ:.t -JLJ
--G
,E3-c
M--J~·+
MILLIMETERS
DIM MIN
MAX
A 10.80 11 05
7.49
775
B
261
2.41
C
0.66
D
0.51
2.92
F
3.18
2.46
2.31
G
2.41
H
1.27
0.64
0.38
K 15.11 16.64
30 TYP
M
n 3.76 4.01
R
1.14
1.40
0.89
S
0.64
3.94
U
3.68
V
1.02
J
-
STYLE 2
PIN 1 CATHODE
2. ANODE
3. GATE
INCHES
MIN MAX
0.425 0435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0125
0.091 0097
0.050 0095
0015 0025
0.595 0655
30 TYP
0.148 0.158
0.045 0.055
0.025 0035
0145 0.155
0.040
\
CASE 77-04
TO·126
I
·Trademark of Motorola Inc.
7-126
C106 series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Choractoristic
Peak Forward Blocking Current
(Rated VORM, RGK = 1000 Ohms, T J = 25°C)
(Rated V ORM , RGI< = 1000 Ohms, T J = 110°C)
IORM
Peak Reverse Blocking Current
(Rated VRRM, RGK = 1000 Ohms, T J = 25°C)
(Rated VRRM, RGK = 1000 Ohms, TJ = 1100 C)
IRRM
Forward "On" Voltage
(J FM =4 A Peak)
VTM
Gate Trigger Current (Continuous de)
Gate Trigger Voltage (Continuous de)
TJ = 25°C
(V AK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms) TJ =-400 C
(V AK = Rated VORM, R L = 3000 Ohms, RGK = 1000 Ohms,
T J = 110°C)
VGT
Holding Current
(VO = 12 Vdc, RGK = 1000 Ohms)
IHX
-
Volts
I'A
TJ = 25°C
TJ = -400 C
TJ = +110 0 C
-
30
75
200
500
0,4
0.5
0.2
-
O.B
0.3
0.4
0.14
-
3
Volts
1
-
-
mA
6
2
-
VII's
40
-
I'S
tq
-
1.2
Turn-Off Time
,~
90
"
70
50
~
20
o
.4
hMPE~ATURk ~ l10bc
/.
;:
........
.........
~
DC
Ei
~
....... -.(('
~
.......
I
HALF1SINE ~AVE I
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
r------...
~
"-
.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
IT (A VI AVERAGE ON-liTATE CURRENT (AMPERES)
V
V. . . . V
z
o
.........
I
I
--.......... j
~
.......
I'-
'6
~
.......
"-
~~~I~~:~i ~:~~DUCTIVE LOAD.'
50 to 400 Hz
JUNhlON
o
,/
40
to
z
\
~ 30
10
.t:
I'S
FIGURE 2 - MAXIMUM ON-5TATE POWER DISSIPATION
Vi
........... ~
80
~
I-
2.2
B
60
w
I'A
10
100
-
-
<
'-'
U
-
tgt
:::>
'"
10
100
Turn-On Time
110
ill
I-
-
Unit
dvldt
100
'"
-
-
FIGURE 1 - AVERAGE CURRENT DERATING
I-
MilX
IGT
Forward Voltage Application Rate
(T J = 110°C, RGK = 1000 Ohms, Vo = Rated VORM)
w
Typ
I'A
(VAK =6 Vdc, RL = 100 Ohms)
(V AK = 6 Vdc, RL = 100 Ohms, TC = -400 C)
~
Min
4.0
w
to
ffi>
< 0
:;; 0
,/
/
-"
I"
;'
?'
.4
.8
1.2
1.6
2.0
2.4
2.6
3.2
3.6
IT (AVI AVERAGE DN·STATE CURRENT (AMPERESI
PO.I'Dg. Intorchano.abillty
The dimensional diagrams balow compare tho critical dimensions of tho Motorola C-l06 packega
with competitive devlcas. It h.1 be.n demonstratad that tho smellor dimensions of the Motorola pack.go meke It compatlblo In most lead-mount and chassis-mount eppllcatlons. The usor Is advlsod to
compare all critical dlmen.lon. for mounting compatibility.
.
Compotltlve C-1 06 Package
7-127
OC
I?-i""
~
~
Motorola C-106 Pack ago
r-
,/'
4.0
C122
.
series
SILICON CONTROLLED
RECTIFIER
REVERSE BLOCKING TRIODE THYRISTOR
· .. designed primarily for half·wave ac control applications, such
as motor controls, heating controls and power supplies; or where·
ever half·wave silicon gate-controlled, solid·state devices are needed.
8 AMPERES RMS
50-600 VOLTS
• Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, ThermowatrA' Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
A
Blocking Voltage to 600 Volts
• Different Lead Form Configurations,
Suffix (2) thru (6) available, see
Thyristor Selection Guide for Information
MAXIMUM RATINGS
(Note 2)
Rating
Repetitive Peak Off·State Voltage
Repetitive Peak Reverse Voltage
Symbol
C122F
C122A
C122S
C122C
C122D
C122E
C122M
Non·Repetitive Peak Reverse Voltage
•
(All Conduction Angles)
TC" 75°C
Peak Forward Surge Current
Unit
Volts
50
100
200
300
400
500
600
R
I-~
ITIRMS)
8
Amps
ITSM
90
Amps
12 t
34
A 2s
t=8.3m.
Forward Peak Gate Power (t = 10 "s)
Forward Average Gate Power
Watts
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
PGM
5
0.5
Watt
IGM
Amps
TJ
2
-40 to +100
Tst.
-40 to +125
°c
°c
N
s
Characteristic
T
Thermal Resistance, Junction to Case
(1) VORM for all types can be applied on 8 continuous de basis without Incur·
ring damage. Ratings applv for zero or negative gate voltage. Device. should
not be tasted for blocking capability In iii manner such that the voltage
supplied exceeds the rated blocking voltage.
(2) Add lead form suffix deslgnator"( )" to part: number for lead configurations 2 thru 6. See Thyristor Selection Guide for Information .
.. Trademark of Motorola Inc.
7-128
Dj~EG
MILLIMETERS
A
B
C
n
THERMAL CHARACTERISTICS
fI+lL
PIN I. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM
PG(AV)
H
T;CTA."
75
200
300
400
500
600
700
(1/2 Cycle, Sine Wave, 60 Hz,)
Circuit Fusing Considerations
~
Volts
VRSM
C122F
C122A
C122S
'C122C
C1220
C122E
C122M
Forward Current RMS
Value
VORM
VRRM
MIN MAX
14.23 15.B7 0.560
6 10.66 0.3BO
4.B2 0.140
.5
0.51 1.14 0.020
3.31 3.733 0.139
2.29 2.79 0.090
6.35
.1 1.14 0.012
0.500
1 .70 14.27
0.045
17
4.B3 5.33 0.190
0.100
4 3.04
2.92 O.OBO
.0
0.020
I 1.39
5.B5 6.B5 0.230
CASE 22HI2
TO·22OAB
All JEDEC dimensions and notes apply
NOTE: SUFFIX (1) Lud Conflgur.tlon
AV.II.ble.t st.ndard.
C122 series
ELECTRICAL CHARACTERISTICS (TC
25°C unless otherwise noted)
=
Characteristic
(VO
TC
TC
= Rated VORM)
Peak Reverse Blocking Current
(VR
Min
Typ
Max
Unit
0.1
0.5
mA
IRRM
-
0.1
0.5
mA
VTM
-
-
1.83
Volts
-
-
25
40
-
-
1.5
2
Symbol
= 25°C
= 100°C
TC = 25°C
TC = 100°C
Peak Forward Blocking Current
= Rated VRRM)
IORM
Peak On·State Voltage (1) ,
!lTM = 16 A Peak, TC = 25°C)
Gate Trigger Current (Continuous de)
(VO
(VO
mA
IGT
=6 V. RL = 91 Ohms. TC = 25°C)
=6 V, RL = 45 Ohms. TC = -40°C)
Gate Trigger Voltage (Continuous de)
Volts
VGT
=6 V. RL =91 Ohms, TC = 25°C)
=6 V. RL =45 Ohms, TC = -40 0 C)
(Vo = Rated VORM, RL = 1000 Ohms. TC = 100°C)
(VO
(VO
0.2
Holding Current
IVO = 24 Vdc, IT = 0.5 A,
0.1 to 10 ms Pulse, Gate Trigger Source
-
mA
IH
= 7 V, 20 Ohms)
TC = 25°C
TC = -40 0 C
-
30
60
tq
-
50
-
"s
dv/dt
-
50
-
V/"s
Turn·Off Time IVO ~ Rated VORM)
IiTM = 8 A, IR = 8A)
Critical Rate-of·Rise of Off-State Voltage
(VO = Rated VORM, Linear, TC = 100°C)
II) Pulse Test: Pulse Width = 1 ms, Outy Cycle';; 2%.
FIGURE 1 - CURRENT DERATING (HALF·WAVE)
FIGURE 2 - CURRENT OERATING (FULL·WAVE)
w
w
~
:>
'"
....
'"
~
~
~....
~
....
w
~
<3
..
..1ij
u'
80
w
~
"
85
w
~w
..'"
..1i~
"..x
90
~
'"
;:
~OUCTIOfl
.""x
MGLE
60
0
....
..;
15
10
65
60
0
....
IT(AV).AVERAGE ON.sTATE FORWARD CURRENT (AMPERESI
FIGURE 3 - MAXIMUM POWER DISSIPATION (HALF·WAVE)
FIGURE 4 - MAXIMUM POWER DISSIPATION (FULL-WAVE)
......
~
r- R~SIShvEI OR iNOJCTI~E LbAOl50tO 410 Hi
2
3
4·
IT(AVI. AVERAGE ON.sTATE CURRENT (AMPERES)
10
~
DC
z
0
>=
;t
./
1800
9UO
61-CONOUCTION
r - ANGLE 3D·
2r-
.~
~
~
2
v:
'"w
~w
'L'
120· /
- 6~
/. I'l
~V /
iii
c
./
!<
....
"'::5
"
w
'"~
>
«
u'
....
4
ITlAV). AVERAGE ON.sTATE CURRENT (AMPERES)
7-129
r---+--~~~~~r--~___
~
r---b~~~--r--~. ~ ..
l--zjjijl!l~_+--_+
II
•
__I--_DlfCYtU
Of SIIf'flY fllEQUElC'I'
RESISTIVE OR INDUCTIVE LOAD. 50TO 400 Hz
1234561
IT(AV).AVERAGE ON.sTATE CURRENT (AMPERES)
e228
C228( )3
e229
series
REVERSE BLOCKING TRIODE THYRISTOR
... designed for industrial and consumer applications such as power
supplies, battery chargers, temperature, motor, light and welder
controls.
• Economical for a Wide Range of Uses
o High Surge Current - ITSM = 300 Amp
e Low Forward "On" Voltage - 1.2 V (Typ) @ ITM = 35 Amp
o Practical Level Triggering and Holding Characteristics 10 mA (Typ) @TC=25 0 C
o Rugged Construction in Either Pressfit, Stud, or Isolated
Stud Packages
o Glass Passivated Junctions for Maximum Reliability
SILICON CONTROLLED
RECTIFIER
35 AMPERES RMS
60 thru 600 VOLTS
C229Sarios
STVLE1'1_
1 CATHODE
2 GATE
CAS• •N•• '
a
0
"
MAXIMUM RATINGS
Rating
Repetitive Peak OffoState Voltage (1)
ITJ ~ -40 to +12S0 C)
C229F, C228F, C228F3
C229A, C228A, C228A3
C229B, C228B, C228B3
C229C, C228C, C228C3
C2290, C2280, C22803
C229E, C228E, C228E3
C229M, C228M, C228M3
•
Non·Repetltlve Reverso Voltage
ITJ • -40 to +1260 C)
C229F, C228F, C228F3
C229A, C228A, C228A3
C229B, C22BB, C228B3
C229C, C228C, C228C3
C2290, C2280, C22B03
C229E, C22BE, C22BE3
C229M, C22BM, C22BM3
Forward Currant RMS
Peek Surge Current
lon8 cycle, 60 Hz) ITC - -40 to +1260 C I
Circuit FUllng Consideration.
ITC ~ -40 to +125 °C) It = 1.0 to B.3 ml)
Peak Gate Power
Average' Gate Power
Peak Forward Gate Current
Operating Junction Temperature Range
~torage Temperature Range
Stud Torque
Symbol
Value
50
100
200
300
400
600
600
C228 Saries '
Volt.
VRSM
r~
~
~'A~
ITIRMS)
IT5M
76
160
300
400
600
600
720
36
300
Amp
Amp
12 t
370
A2.
.
STYLE 1:
PIN 1. CATHODE
l.GATE
3.AIIOOE
A
C
F
H
J
I{
-
6
0.6
2
-40 to +125
-40 to +150
30
Symbol
Max
PGM
PGIAV)
IGM
TJ
T.t9
Watts
Watt
Amp
DC
DC
in. lb.
Unit
L
n
n
T
C228( ) 3 Sari..
'
[fD
p,.
A B
I
STYLE ,.
1. CATHODE
2. GATE
3. ANODE
1.7
1.85
15.34 15.60
1400 14.20
26.61 30.23
3.43 4.06
2.29 REF
10.6111.56
15.15 11.02
DIM
A
MIN
8
12.73
, f
G
H
J
K
l
Q
T
7-130
2.16
1.60
10.61
7.62
6.48
1.40
3.43
0.5010.505
C~SE
MILLIMETERS
MAX
"
0.6200.670
_.~.
1.5
12.73 12.83
C
(1) VORM and VRRM for all types can be applied on a continuous
de basis without incurring damage. Ratings apply for zero or
negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential
on the anode.
0.604 0.614
0.5510.559
1.050 \.190
01350.160
0.090 REF
.,
'
°C/W
ROJC
INCHES
MAX
MILLIMETERS
DIM MIN MAX
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
C228 and C229 Series
C2281 ) 3 Series
CASE 310·01
Unit
Volts
VORM
and
VRRM
311·01
C228, C228( )3, C229 series
ELECTRICAL CHARACTERISTICS ITC = 25°C unle.s otherwise noted.)
Charactoristic
Symbol
Min
Typ
Max
Unit
P.ak Forward Blc"king Current
IAated VOAM, with gat. open)
TC
TC
=25°C
= 125°C
lOAM
-
-
1
rnA
Peak Reverse BI ~ki ng Current
TC = 25°C
TC'1250C
IAAM
IAated VAAM)
-
Forward "On" Voltage
VTM
= 100 A Peak)
(tTM
Gate Trigger Current
IVO
(VO
Gate Trigger Voltage
(110 = 12 Vde, RL =80 Ohm., TC = 25°C)
(VO = 6 Vde, AL = 80 Ohms, TC = -40oC)
Holding Current
V GT
=+125 0e)
Te - 25 e
Te = -40o e
u
(Anode Voltage
= 24 V, gate open)
IH
Turn·On Time ltd + t r )
(tTM ~ 35 Ade, IGT =40 mAde)
ton
Turn-Off .Time
toff
(tTM
(tTM
= 10 A,
= 10 A,
IA
IA
= 10 A)
= 10 A, Te = 100oe)
= 1000 e
-
1
-
-
3
-
-
1.9
-
-
40
80
-
-
2.5
-
3
0.2
-
-
Volts
-
-
-
75
150
mA
-
-
1.0
-
-
20
35
50
-
dv/dt
mA
Volt.
mA
Volts
~.
,lS
-
Forward Voltage Application Rate
(Te
-
VGT
Gate Trigger Voltage
.J
3
IGT
= 12 Vde, AL =80 Ohm., TC =25°C)
=6 Vde, AL ~ 50 Ohms, TC = -400C)
(Aated VOAM, AL ~ 1000 Ohm',TC
-
-
V/~s
)
FIGURE 1 - CUAAENT DERATING
(HALF·WAVE RECTIFIED SINE WAVE)
w
•
FIGURE 2 - CURRENT DEAATING
(FULL·WAVE RECTIFIED SINE WAVE)
g
40
IT (AV), AVERAGE ON·STATE CURRENT (AMPS)
IT (A V) AVERAGE ON.sTATE CURRENT (AMPS)
7-131
C230,231
C230( )3, 231( )3
C232,233
series
REVERSE BLOCKING TRIODE-THYRISTOR
SILICON CONTROLLED
RECTIFIER
· .. designed for industrial and consumer applications such as power
supplies; battery chargers; temperature, motor, light, and welder
controls.
25 AMPERES RMS
50 thru 600 VOLTS
•
Economical for a Wide Range of Uses
•
High Surge Current - ITSM = 250 Amp
•
Low Forward "On" Voltage - 1.2 V (Typ) @ ITM = 25 Amp
•
Practical Lev,el Triggering and Holding Characteristics 10 mA (Typ) @TC = 25 0 C
•
Rugged Construction in Either Pressfit, Stud or Isolated Stud
•
Glass Passivated Junctions for Maximum Reliability
STVLE l'
1 GATE
2 CATHODE
CASE ANODE
.,.
A
,,a
•,
f
•
Q
MAXIMUM RATINGS ITC ~ 1000C unless otherwise noted)
Rating
Peak Repetitive Off·State Voltage II)
ITC = -40 to +IOOoC)
All Types
Suffix
Symbol
Value
Unit
F
VORM
and
VRRM
Volts
ITIRMS)
ITSM
50
100
200
300
400
500
600
75
150
300
400
500
600
720
25
250
12t
260
A2s
PGM
PGIAV)
IGM
TJ
Tstg
5
0.5
2
-40 to +100
-40 to +125
30
Watts
A
B
C
0
E
M
Non-Repetitive Reverse Voltage
•
ITC = -40 to 100°C)
All Types
F
VRSM
A
B
C
0
E
M
Forward Current RMS
Peak Surge Current
lOne Cycle, 60 Hz)(TC
= -40 to 100°C)
Circuit Fusing
ITC
C232 and C233 series
STYLE 1
TERM 1. CATHODE
2 GATE
STUD ANODE
f~lJ
Volts
Q
Amp
Amp
1
c
L
lrr~
.,.• .,. ..x .,.
,
•,,
•
a
f
K
Q
T
MILLIMETERS
INCHES
153. 15.S0
1400 1•. 20
20.10 2.13
O.S04 O.SI.
0551 0559
D.815 0.950
0.03
D.090REF
0.420 0455
0.• '5
0.215 0.305
0.1&0
O.OBSREF
0.505
... "
2.29 REF
1061 11.56
IDS.
6.99 1.75
1.6
1.65 REF
1210 12.13
MAX
.,.,
..,,'
11
.lI
..
"
.,'"
~
i --r'Case 175 02 "
"""'
SEATING PLANE
\
= -40 to +IOOoC)(t = 1.0 to B.3 ms)
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque
-
Watt
Amp
°c
°c
in. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Pressfit and Stud
Isolated Stud
Symbol
Max
Unit
C230 and 231 series
STYlE 1
1. CATHODE
2. GATE
3. ANODE
STUD ISOLATED
u ' ·
~
.,. MI"
MILLIMETERS
1.00
1.15
MAX
12.13 12.13
21.18
. ...
0.110
0.255
2.41
10.'7 II.
D.415
1.71
7.15
0.275
....
..55 • 1
....
1.52
RBJC
INCHES
MAX
0.559
0.501 0.505
MI"
•,• ". ". ."
-u. ..
...- ,
•
a.
.....
.....
•42. ....
'" "54 ....
.".... ...., , ."",
•
1.71
~"
OG"
OG"
11) VORM and VRRM for all types can be applied on a continuous dc basis without
incurring damage. Ratings apply, for zero or negative gate voltage. Devices shall not
have a positive bias applied to the gate concurrently with a negative potential on
the anode.
C230C 13 and C231 C13.rles
7-132
C230, 231 / C230( )3,231 ()3 / C232,233 series
ELECTRICAL CHARACTERISTICS
(TC
= 25°C
unless otherwise noted)
Characteristic
Peak Forward Blocking Currrent
(VO a Rated VORM, with gate open)
(VR • Rated VRRM)
Min
Typ
IORM
or
-
0.5
1.0
TC = 25 0 C
TC'100 0 C
Forward "On" Voltage
Unit
, Max
Symbol
mA
IRRM
-
VTM
-
-
-
-
25
40
-
-
-
9.0
20
-
1.5
2.0
Volts
1.9
(lTM = 100 A Peak, Pulse Width" 1 ms, Duty Cycle" 2%)
Gate Trigger Current, C230, C230( )3, C232 series
(VO· 12 Vdc, RL = 120 Ohms)
(VO = 12 Vdc, RL = 60 Ohms)
mA
IGT
TC = -400 C
Gate Triggar Current, C231, C231 ( )3, C233
(VO = 12 Vdc, RL ·120 Ohms)
(VO· 12 Vdc, RL = 60 Ohms)
mA
IGT
TC = -40°C
Gate Trigger Voltage
VGT
(VD = 12 Vdc, RL ·120 Ohms)
(VO -12 Vdc, RL = 60 Ohms)
(VO = Rated VDRM, RL = 1000 Ohms)
Holding Current
(VO = 24 V, gate open, IT = 0.5 A)
-
IH
TC = -40°C
Turn-On Time (td + t r )
(lTM = 25 Adc, IGT = 40 mAde, Vo = Rated VORM)
tgt
Turn-Off Time
(lTM =10 A, IR = 10 A, Pulse Width = 50 I'S,
dv/dt = 20 VII's, Vo = Rated VORM)
TC
=
Forward Voltage Application Rate
(VO = Rated VORM)
TC
=1000 C
tq
0.2
-
-
-
-
1000 C
dv/dt
FIGURE 1 - CURRENT DERATING FOR
PRESSFIT AND NON-ISOLATED STUD
100 ""ll=-
Volts
-
TC = -40°C
TC = +100 0 C
mA
-
50
100
1.0
-
I'S
I'S
-
25
35
-
100
VII's
FIGURE 2 - ON-STATE POWER DISSIPATION
versus ON-STATE CURRENT
30
de ;"
~
....
:,/'
'"
~ 24
z
0
;::
;::
ill
lBO'
120'/
18
90'
C
60'
'" 12
~
Q=
.:w
to
'">
'"
.E
~ 6.0
12
16
I
-
20
24
~
.,
/V
I
/'
V'h/::
;/
300
~~
/'
./
i--
~~~~ -
J. ~
Q
= Conduction Angle
/'P"
28
4.0
ITIAVI. AVERAGE FORWARD CURRENT lAMPS)
8.0
12
16
24
20
28
ITiAVI. AVERAGE FORWARD CURRENT (AMPSI
NOTE: Derating is for Pressift and Stud Devices. Isolated stud devices must be derated
an additional 15%. For examplerlhe max Te@ 16 A 080 0 conduction anglel
is 70 0 e, it derating of 300 e. Isolated stud devices musl be derated 34.5 0 C;
therefore, the maximum TCis 65.5 0 C.
FIGURE 4 - GATE VOLTAGE VARIATION
WITH TEMPERATURE
FIGURE 3 - GATE CURRENT VARIATION
WITH TEMPERATURE
20
'"....
1.0
.~
g
~
'"'"
ffi
10
~
I
o
Off·Stale Voltage =12 V
r-.....
I
......
1.0
2
~ 5.0
Off-State Voltage
...........
.......
g
....0;
i'....
~
to
~
12 V -
-
I"-.
~ 0.1
ffi
'Z
...........
~
........
I
0.9
~ 0.8
to
to
~
I
...........
r-........
0.6
r-....
0.5
......
'"~ 0.4
to
3.0
>
2.0
-60
-40
-20
0
20
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE 10C)
0.3
-60
-40
-20
20
40
60
80
TJ, JUNCTION TEMPERATURE I'C)
7-133
100
120
140
•
MAC15
MAC15A
OMTI
I
TRIACS
15 AMPERES RMS
200-800 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for full·wave ac control applications, such as
solid·state relays, motor controls, heating controls and power supplies;
or wherever full·wave silicon gate controlled solid·state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
MT2
MTt
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowaw~ Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (MACI5)
Four Modes (MACI5A)
MT2
G
MAXIMUM RATINGS
Rating
Peak Repetitive Off-State Voltage
ITJ = -40 to 125°C)
•
Full Cycle Sine Wave 50 to 60 Hz ITC = +90o C)
Circuit Fusing
Peak Surge Current
lOne Full Cycle, 60 Hz,TC = +BOoCI
preceded and followed by rated current
Peak Gate Power IT C = +800 C, Pulse Width = 2 ."
Average Gat. Power IT C = +BOoC, I = 8.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Value
Unit
Volts
VORM
MAC15-4, MAC15A-4
MAC15-6, MAC15A-6
MAC15·B, MAC15A-8
MAC15-10, MAC15A-10
Peak Gate Voltage
On-State Current RMS
200
400
600
800
,
VGM
10
Volts
ITIRMS)
15
Amp
Thermal Resistance. Junction to Case
K
LL
--l-[L
A 2 sec
Amp
PGM
20
Watts
PGIAVI
IGM
0.5
G
2
Watt
Amp
-40 to +125
-401o +150
°c
°c
K
L
M
N
P
R8JC
Max
2
Unit
°CIW
DIM
A
C
0
E
F
H
J
a
R
MIN
0.380
0.560
0.010
0.045
0090
0100
0.139
0.500
0.130
0.140
0.080
0011
0.020
0.190
MAX
0410
0615
0.045
0.150
0070
0.110
0.110
0141
0.561
0.170
0.190
0.115
0.045
0.055
0.110
MIN
9.660
1413
0510
1.140
7-134
MAX
1066
1587
1.140
6.350
1~~
~.~~~ ~
3.531
11.10
5.850
3.560
2.040
0310
0.510
4.830
CASE 221.02
TO·220 AB
aTradem8rk of Motorola Inc.
G
R
' - ' '-INCHES MllUMET E-FiS
93
150
Symbol
o-l (......
3. Gate
All JEDEC dllnenslOns and notes applV
12 t
TJ
T stg
d'lfE'L
--H..:p
Pin 1. MT 1
2. MT 2
ITSM
THERMAL CHARACTERISTIC
Characteristic
J
123
Symbol
~.~~~
14.17
6.810
i~¥O1.140
1.390
5330
MAC15, MAC15A
ELECTRICAL CHARACTERISTICS (TC = 25°C, and alther polarity of MT2to MTl Voltage unless otherwise noted)
Charactorlstlc
Peak Blocking Currerit
VO· Rated VORM@TJ = 125°C, Gate Open
Peak OnoState Voltaga
ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle .. 2%
Peak Gate Trlggar Current
Vo = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 21's
MT2 (+), G(+) - MAC15, MAC15A
MT2 H), GH - MAC15A
MT2 H, G(-) - MAC15, MAC16A
MT2 H, G(+) - MAC15A
Peak Gate Triggar Voltaga
Vo = 12 Vdc, RL = 100 Ohms
Minimum Gata Pulse Width = 2 j.IS
MT2 1+), GI+) - MAC15, MAC15A
MT2 1+), GI-) - MAC15A
MT2 H, GH - MAC15, MAC15A
MT2 H, GI+) - MAC15A
Vo = Rated VORM, RL = 10k Ohms, TJ = 110°C
MT2 1+), GI+); MT2 H, GH - MAC15, MAC15A
MT2 1+), GI-); MT2 (-), GI+) - MAC15A
Symbol
Min
TVp
MaK
IORM
-
-
2
Unit
mA
VTM
-
1.3
1.S
Volts
mA
IGTM
-
-
-
-
pO
-
75
50
75
-
Volts
VGTM
-
0.9
0.9
1.1
1.4
0.2
0.2
-
-
6
40
mA
-
-
2
2.5
2
2.5
-
Holding Current (Either Direction)
IH
-
Turn·On Time
Vo =Rated VORM,ITM =17 A
IGT = 120 mA, Rise Time =0.1
t9t
-
1.5
2
j.IS
dv/dtlc)
-
5
-
VII's
Vo =12 Vdc, Gate Open
ITA 200 mA
j.IS,
Pulse Width
=21's
Critical Rate of Rise of Commutation Voltage
Vo =Rated VORM, ITM =21 A, Commutating
dl!dt = 8 Alms, Gate Un energized, TC = 80°C
7-135
, MAC15, MAC15A
FIGURE 1 - RMS CURRENT DERATING
FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
so
130
........ ~
~ 120
11
1!i
100
I-
0
a .180° .......
w
5
80
.§ 30
a
0:
20
~
~
w
~
i'-
10
12
ITIRMS). RMS ON.sTATE CURRENT lAMP)
4
10
16
..............
~ i"'-.
i""- r--.,
t>.., k" ~
;:t<
S.o
-60
V
,~
2
....
-40
-20
~
20
40
60
80
100
TJ. JUNCTION TEMPERATURE (OC)
120
140
FIGURE 5 - ON-STATE CHARACTERISTICS
100
0
,
~ 16
TJ"'" 12S DC
I-
!
~
.......
::--
QUATNTy:::
FIGURE 2 - ONoSTATE POWER DISSIPATION
20
0:
OF'F.sTAie VOL+AGE .',2 V-
...........
i"'-. i"'-.
..........
r-I-- . .
r-r-!'
I
'"E~ 7.0
I'\.
14
.=CONOUCTION ANGLE
o
~
I-
de"", f'.... ~
TJ~ 12S0' \
""-
ffi
'"'"
.........
,
r.....,
r......
I-
~
..... ~ ~ r-..
.J.
~ 9o
I'
<
~~
/ /a'600
ja- 900
~~
~~
W
0:
~
/a=300
12 '
w
~
ffi
TJ = 2SoC
..L
0
.J. '
~
'"
L
/
12SoC
IV'
0
I
>
<
:>
~
,/
/
0
I
~
0
0
10
0
14
12
16
S
ITlRMS). ON·STATE CURRENT lAMP)
•
If
1/
3
FIGURE 3':' TYPICAL GAT!, TRIGGER VOLTAGE
I
I
2
I.B
OF'F-STAiE VOLiAGE = \2V-
~
1.6
~ 1.4
w
'"~
>
'"~
.............
.........
1.2
o
ffi
I
I
1.0
r..;;:
0.8
~
12 ~
5 0.6 I- QUADRANTS
I
3-:'"
w
l' 0.4
-60
-..... J
1~ ~
L
I-
I
-40
o.7
. dUAORiNT 4
.........
~
1
I
o.S
.......
I
o. 3
......
.......
o. 2
I
r-..
20
40
60
80
100
-20 TJ. JUNCTION TEMPERATURE 10C)
120
:
,
140
o.1
0.4
0.8
1.2
1.6
2.4
2.8
3.2
3.6
VTM.INSTANTANEOUS ON.sTATE VOLTAGE IVOLTS)
7-136
4.4
MAC15, MAC15A
FIGURE 6 - TYPICAL HOLOING CURRENT
20
I"-..
!
ffi
.
~
~
10
..........
.........
.......
7.0
1/
~ 5.0
i§
'"
:=- 3.0
L
2.0
-60
-40
-20
~ 200
,..
~
-.... ........
MAIN TERMINAL #2
prSITlVr
o
----
a::
MAIN TERMINAL #1
POSITIVE
"'
/ i'-.
:::I
FIGURE 7 -MAXIMUM NON-REPETITIVE SURGE CURRENT
300
GATE OPEN
i:l
w
.......
'"
=
~
............
'"~
".............
"-
20
40
~
~
TJ. JUNCTION TEMPERATURE (OCI
~
..
100
70
50
TC • SOOC
f • 60 Hz
Surge is preceded and followed by rated current
,!'
m
r-- 1--1-
30
~
10
1
NUMBER OF CYCLES
FIGURE 8 - THERMAL RESPONSE
w
u
0.5
~-
0.2
~
~o
,......-
;;~
....- ....ZOJCltl =,(II· ROJC
ffi ~ O. 1
,..=
,..0
ffi ~ 0.05
",::!!
u;
z
«
=
~
0.02
'2
0.0 1
0.1
0.2
0.5
10
20
50
t. TIME (ms)
7-137
100
200
500
1k
2k
5k
10 k
•
MAC20j MAC20A
15 AMPERES RMS
MAC25j MAC25A
25 AMPERES RMS
MACSOj MACSOA
40 AMPERES RMS
MT20~----~~G
TRIACS
200-800 VOLTS
SILICON BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and consumer applications
for full-wave control of ac loads such as appliance controls, power
supplies, solid·state relays, heating controls, motor controls, welding
equipment, and power switching systems.
•
Electrically Isolated From Mounting Base
•
Isolation Voltage of 2500 Volts RMS
• Quick" Connect/Disconnect Terminals
•
Glass-Passivated and Center Gate Geometry
• Gate Triggering Guaranteed in Three Modes (MAC20/25/50)
Four Modes (MAC20A/25A/50A)
MAXIMUM RATINGS ITJ = -0 to +12So C unless otherwise noted)
Rating
Repetitive Peak
Off~State
Svmbol
Voltage
20
1.
25
Volts
---200 ___
--'300--- - 4 0 0 ___
--500---600 _ _
--700 _ _
---800 _ _
RMS On·State Current~
ITC = 1000 C for MAC20/A)
TC = 900 C for MAC25/AI
ITC = 70 0 C for MAC50/A)
ITIRMS)
15
-
Peak Non-Repetitive Surge Current
-
-
25
-
-
40
Amp,
ITSM
150
250
300
Amps
12 t
90
260
375
A2s
lane Full Cycle, 60 Hzl
Circuit Fusing
It = 1 to 8.3
m,l
Aver age Gate Power
PGIAVI
0.5
O.S
0.75
Watts
Peak Gate Current 1101',1
IGM
2
2
4
Amp,
Operating Junction Temperatura Range
TJ
-0 to +125
°c
Storage Temperature Range
T,tg
-40 to +125
°c
THERMAL CHARACTERISTICS
I
Characteristic
Thermal Resistance, Junction to Cese (DC)
IApperant)°
Svmbol
ROJC
I
Maximum Value
1.6
1.3
1.5
1.0
-
1.4
0.95
I
Unit
°C/W
°Oefined as: 11250 C. - T CI for a,60 Hz full sine wave.
N
J-J
Unit
50
1/2 Sine Wave SO to 60 Hz, Gate Open
•
MT1
Z. MTZ
3. GATE
VORM
MAC20/25/50-4, MAC20A/2SAl50A-4
MAC20/25/S0'5, MAC20Al25A150A-5
MAC20/25/50-6, MAC20A/25A/50A-6
MAC20/2S/SO·7, MAC20A/25A/50A-7
MAC20/2S/50-B, MAC20A/2SA/50A-B
MAC20/25/50-9, MAC20A/25A/50A-9
MAC20/25/50-10, MAC20A/2SA/50A-l0
.~.QB
~
STYLE Z.
MACsaries
I ~~;lf'
u.l ~
f---- ~-::
NOTE:
A
...
1. DIMENSIONS D AND F
Temperature
Reference
Point
APPLY TO TERM 1 ANO Z.
Z. MTl AND MT2THICKNESSES ARE A
NOMINAL 0.03Z".
GATE TERMINAL THICKNESS IS A
NOMINAL O.OZO".·
DIM
A
8
C
0
E
F
G
J
K
L
M
N
Q
R
MILLIMETERS
MIN MAX
39.37
26.67
27.30
6.22
6.48
3.02
3.33
1.78
12.19 12.70
29.90 30.40
35.56 37.08
4.57
4.95
350
400
300
350
3.81
4.09
19.81 22.35
INCHES
MIN MAX
1.550
1.050
1.075
0.245 0.255
0.119 0.131
0.070
"0.480 0.500
1.171 1.197
1.400 1.460
0.180 0.195
50
400
300
35 0
0.150 0.161
0.78
0.880
T
CASE 326-01
PAV
°Gat. terminal thlckn ... of .032" is available. Designate a deVice with .032" terminal, by
adding e T efter the davie. type. For axample, MAC20A4T_
7-138
MAC20/MAC20A, MAC25/MAC25A, MAC50/MAC50A
ELECTRICAL CHARACTERISTICS
(All voltage polarity reference to MT1; applies to either polarity of MT2 to MT1, TC "" 2SoC unless otherwise noted)
MAC20/20A
Characteristic
Symbol
Peak Blocking Current
Vo = Rated VORM. Gate Open
TC
TC
= 125°C
= 250 C
lOAM
Peak On-State Voltage
MAC25/25A
MACSO/SOA
Min Typ Max Min Typ Max Min Typ Max
-
-
-
2
0.1
-
-
-
2
0.1
-
2
0.1
Unit
mA
Volts
VTM
Pulse Width:::: 1 ms, Duty Cycle 2%
ITM
ITM
ITM
=21 A
=35 A
= 56 A
Peak
Peak
Peak
Peak Gate Trigger Current
V0
MT2 (+1. G (+1; MT2
MT2 (-I. G (+1
(-I. G (-I; MT2 (+1. G (-I
A SuffiX Only
Vo = Rated VORM. RL = 10 k!1. TC = 12SoC
Holding Current
IH
= 12 Vdc. Gate Open. RL = 40 Ohms
Turn-On Time
~
115
aJ
...
w
'"~
'~"
-
-
-
1.65 1.75
mA
-
15
30
50
75
-
20
35
70
100
-
-
0.9
2
2
-
1.4 2.5
-
1.1
-
20
35
70
100
Volts
1.3 2.5
0.2
-
-
0.2
-
-
-
6
40
-
10
75
-
1.5
-
-
-
-
-
0.2
-
-
-
1.5
-
-
-
1.1
2
1.3
2.5
-
-
10
75
-
-
-
1.5
-
MAC20/20A
5
30
-
-
-
-
-
-
-
VORM. ITM = 35 A.
Commutating di/dt = 16 Alms. TC
= 90°C
MAC25/2SA
-
-
-
5
30
-
-
-
-
Vo
VORM. ITM = 40 A.
Commutating di/dt "" 22 Alms. T C
= 70c e
MAC50/50A
-
-
-
-
-
30
-
100
-
5
100
= Rated
= Rated
.......... ~
dv/dt
t-....
f',.........
60
:---..
" ........ "" .....
MAC20/A
MAC25/A
50
.........
I'..
16
24
32
MAC25/A
MAC20/AL ~
40
o
a
L
k""
/'
0
MAC50/A .........
0'. V
.u.V
.,;;: r
...,." .....
8.0
16
24
32
IT(RMS!. RMS ON·STATE CURRENT (AMPERES!
IT(RMSI. RMS ON·STATE CURRENT (AMPERESI
7-139
~
L
0
0
o
MAC50/A/
0
........
5
55
•
V/!'s
FIGURE 2 - MAXIMUM POWER OISSIPATION
........ f"'...
5
75
70
~
5
mA
V/!'s
= Rated VORM.ITM = 21
j
'=>"
-
Vo
~~8 5
«
-
A.
Commutating di/dt = 8 A/ms. TC = 100°C
105
~~9
-
Vo
~
«
-
1.4 1.7
dv/dt(cl
FIGURE 1 - CURRENT OERATING
=>
-
!,S
MAC20/20A
MAC25/25A
MAC50/50A
Critical Rate-of-Rise of Off-State Voltage (Exponential Rise)
Vo = Rated VORM. Gate Open. TC = 125°C
125
-
tgt
=Rated VORM.
ITM = 17 A. IG = 120 mA
ITM = 25 Adc. IG = 200 mA
ITM = 56 A. IG = 200 mA
Critical Rate-of-Rise of Commutation Voltage
~
-
VGTM
= 50 Ohms. Pulse Width =2!'s
MT2 (+1. G (+1; MT2 (-I. G (-I; MT2 (+1. G (-I
MT2 (-I. G (+1
Vo
1.6
-
A Suffix Only
Peak Gate Trigger Voltage
Vo
1.3
IGTM
= 12 Vdc. A L = 50 Ohms. Pulse Width =2 !,S
Vo = 12 Vdc. RL
-
MAC20/20A
MAC25/25A
MAC50/50A
40
MAC3S-1 thru
MAC3S-S, MAC3S-10
MAC36-1 thru
MAC36-S.MAC36-10
TRIAC
(THYRISTORS)
SILICON BIDIRECTIONAL THYRISTORS
25 AMPERES RMS
25 thru 800 VOLTS
· .. designed primarily for industrial and military applications for the
control of ac loads in applications such as solid:state relays, light
dimmers, power supplies, heating controls, motor controls, welding
equipment and power switching systems; or wherever full·wave,
silicon gate controlled solid·state devices are needed.
• 25 Amperes RMS @TC
=67 0 C
• Low On·State Voltage - 1.5 Volts Maximum
• Glass Passivated Junctions for Maximum Reliability
r
MAC 35
MAC 36
CASE 310·01
CASE 263·03
MAXIMUM RATINGS
Rating
Value
Symbol
,Repetitive Peek Off·Stete Voltage 111
• 'M
•
•
'16
•
•
--
'"'01 .06'
•••
IT(RMSI
25
50
100
200
300
400
500
600
800
25
Amp
ITSM
225
Amp
12 t
210
A2 s
Peak Gate Power 121
PGM
5.0
Watts
Average Gate Power
PG(AVI
0.5
Watt
o.lICM
1.050 1190
0.1350.180
D.IJ9OREF
-2
-3
n, - """
MAC35
MAC36
::~
-6
-7
•
MILLIMETERS
INCHES
MI. MAlI
MIN
1273 12.83 0501 0.505
0.160
F
2.41
H
I
0079
7 ,
J
0300
2661
1.050
l
1702
1.40
DOSS
Unit
Volts
VORM
-8
-10
On-5tate Current RMS
Peak Surge Current
(One Full cycle. 60 Hz,
T = -40 to +1100 CI
'16
-
U,'
STYLE ,.
I. CATHODE
2 GATE
CASE. ANODE
CASE 3t()'01
Circuit Fusing Considerations
ITJ = -40 to +ll00C,
t = 1,0 to 8,3 msl
'"
Peak Gate Current 121
IGM
2.0
Amp
Operating Junction Temperature Range
TJ
-40 to +110
Storage Temperature Range
Tstg
-40 to +150
°c
°c
MAC35
MILLIMETERS
11M
MIN
IfilCHES
MAX
M
•
D.614
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance.
Stud Torque
Junction~to-Case
I
I
I
Symbol
R8JC
-
I
I
I
Max
1.0
30
I
I
I
Unit
°C/W
mLEI:
PIN I.CATHOOE
Z.GATE
3. ANODE
in. lb.
(1)For e1ther direction of blocking voltage. VORM for all typa. can be applied on a continuoul de ba,ls without incurring damage. Rating. apply for open gata conditions.
Thyristor device' shall not be telted with a constant current source for blocking capability luch thet the voltage applied exceedl the rated blocking voltage.
CASE 263·03 MAC36
Metric "MS" thread denoted by addition of Mfollowing last digit
of part number, i.e., MAC3S·1M.
. (21T J "" 110°C, 1.0-second maximum duration; 5.0% duty cycle, ITM "" 10 Amps.
©
7-140
MOTOROLA INC. 1975
OS 8533 R1
MAC35-1 thru MAC35-8, MAC35-10/MAC36-1 thru MAC36-8, MAC36-10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise ncited)
Symbol
Min
Typ
Max
Unit
Peak Blocking ~urrent (Either Direction)
Riled VORM@TJ= 11o"C
IORM
-
-
4.0
mA
On-5l11te Voltage (Eithar Direction)
ITM=35APaak
Gila Trigger Currant, Continuous dc (1)
Main Tarminal Voltage = 1.0 Vdc, RL = 47 oh,!,s
MT2(+)G(+); MT2(-)G(-)
MT2(+)G(-); MT2(-)G(+)
VTM
-
1.3
1.5
Volu
IGT
-
20
75
mA
30
100
mA
VGT
-
1.0
1.2
3.0
3.0
Volu
VolU
VGO
0.2
-
-
V!'lt
mA
Ch.-ristic
IGT
Gate Trigger Voltage, Continuous dc (1)
Main Terminal Voltage = 7.0 Vdc; R L = 47 ohms
MT2(+)G(+); MT2(-)GH
MT2(+) GH; MT21-)GI+)
VGT
Gata Trigger Voltage, Continuous dc - All Mod..
Main Terminal Voltage = Rated VORM, RL = 100 ohms, TJ = 11o"C
'.
Holding Currant IEithar Oiraction)
Main Terminal Voltage = 7.0 Vdc, Gate Open,
I nitisting Current = 150 mA
IH
-
10
75
Turn-On Time
ITM = 25 Adc, IGT = 200 mA
ton
-
1.0
-
".
dv/dt
-
100
-
VI".
Critical Forward Voltage Application Rate IExponential Rise
of Voltage)
@VORM,TJ=11o"C,GateOpen
•
FIGURE 1 - MAXIMUM THERMAL RESPONSE
1.0
~
WZ
MAC 35
0.5
=:~
t;:~
~~
0.2
w ....
0""
MAC 36
~~ 0.1
:~
I
R.JC =1.0'CIW MAX
V
MAC 35
~ ~O.05
z_
-:i~
";'~O.O 2
0.0 1
0.02
~ --
MAC 36
~
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t.TIMElms)
7-141
20
50
100
200
500
1000
2000
MAC35-1 thru MAC35-8, MAC35-10/MAC36-1 thru MAC36-8, MAC36-10
FIGURE 3 - RMS CURRENT DERATING
FIGURE 2 - AVERAGE CURRENT DERATING
110
~
w
~ I!oo..
~"' ~ r.:::::::: to-.......
90
"
a:
:::>
!;;:
a:
110
70
........ .........
\. ........
lli
Iw
a=
50
5
..;
9110
'"w
........ r--.
a:
:::>
70
~
60
I-
50
;2
180"
120"
lli
300\
5.0
80
I-
W
5
40
{}
30
20
.=CONOUCTION ANGLE
o
90
0
.J.
30
10
-
......... .........
.......... ...............
~
~
I-
~
\
~
100
MAJ35-
10
10
15
20
0
25
20
IT (AVI. AVERAGE ON.sTATE CURRENT (AMPI
FIGURE 5 - RMS CURRENT DERATING
FIGURE 4 - AVERAGE CURRENT DERATING
11 o~
0
'"
o
w
a:
~
~"
~
70
50
w
5..;
I-
3
o
110
~
I
" "'- f',.
'\
'"
\
100
MAC 36 -
~ f::::::::.t-
U
["--..: t:----.
.!J\jf\.=I
.J.
:::>
I-
70
~
60
I-
50
«
a:
180"
900 i'- 1200.........
........
5.0
•
90
w
a: 80
r--... r--........
..........
'\
\
e..
lli
60"
w
~
5
40
I-
30
..;
30"
20
o .=CONOUCTION ANGLE I
10
10
15
20
0
25
IT (AVI. AVERAGE ON·STATE CURRENT (AMPI
IT (RMSI. RMS ON-STATE CURRENT (AMPI
FIGURE 6 - POWER DISSIPATION versus AVERAGE CURRENT
40
~
a:
w
'"
~
~
.J.
20
=7;1 0
~
I«
900
~V
~
a:
~
600 ~
A ~
:>
~
o~ ~
5.0
25
20
«
~
30
w
'"
~
>
~ ~~
35
~
~
.~30~ ~
;c
~
1800
12J
.=CONOUCTION ANGLE
~
~
w
FIGURE 7 - POWER DISSIPATION versus RMS CURRENT
401,--,---,---,--,---.,--,--,---,--..,--
-J.j+
30
25
IT (RMSI. RMS ON·STATE CURRENT (AMPI
.= CONDUCTION ANG LE
15
10
5.0
0
10
15
20
0
25
2.5
5.0
7.5
10
12.5
15
17.5
IT (RMSI. RMS ON·STATE CURRENT (AMPI
IT (AVI. AVERAGE ON.sTATE CURRENT (AMPI
7-142
20
22.5
25
MAC35-1 thru MAC35-8, MAC35-10/MAC36-1 thru MAC36-8, MAC36-10
FIGURE 8 - MAXIMUM ON·STATE CHARACTERISTICS
FIGURE 9 - MAXIMUM MUL TI-CYCLE SURGE RATING
200
10 0
251C
X
:::
0
100° C
f::
0
10
200
..........
t-.... .........
I-
~_
a
150
w
>
~
b-..
100
2
.........
u;
'"
~
~
0::
~
~
A
0
:il
~
/ "
0
I2
250
........
0
I'
o
1.0
2.0
3.0
7.0
5.0 7.0
10
30
20
50
70 100
FULL CYCLES AT SO Hz
B 5,0
S
0
"?
w
3.
FIGURE 10 - TYPICAL HOLDING CURRENT
is
~ 2.0
3.0
....
~
1. 0
"'
o.7
",0
=>
<>2
2. 0
..........
~t;
i5 ~
O.5
~-
"0
0",
~~
o.7
o.3
:i§ o. 5
o.2
"'oz
;:;
o. 1
o
0.2
o.s
1.0 1.2
2.4
2.0
I.S
:--...
....
j:
t-- ~~:c~~~~lII~~!'R~EC\ERISTICS
o. 2
2.B
-"""
r-.....
0, 3
50
50
100
TJ • JUNCTION TEMPERATURE (oC)
VTM • ON-STATE VOLTAGE (VOLTS)
FIGURE 11 - TYPICAL GATE TRIGGER CURRENT
FIGURE 12 - TYPICAL GATE TRIGGER VOLTAGE
.0
.0
'-...
0
.0
I~
.0
~
- -
.0
t--
.7
.7
......
.5
-
-50
.5
.........
~~:C~~~gm~!'R~tTERISTICS
c - ~~:c~~~~lII~~!R~C\ERISTICS
"-
.3
.2
['-.........
1. 0
50
.3
.2
100
TJ• JUNCTION TEMPERATURE (oC)
50
50
TJ• JUNCTION TEMPERATURE (OC)
7-143
100
MAC37·1 thru MAC37·7 (SILICON)
MAC38·1 thru MAC38·7·
SILICON BIDIRECTIONAL THYRISTORS
· .. designed primarily for industrial and military applications for the
control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power
switching systems; or wherever full-wave, silicon gate controlled
solid-state devices are needed.
• .Glass Passivated and Center Gate Fire
• 25 Amperes RMS @TC= 67 0 C
• Isolated Stud Available
I
TRIAC
(THYRISTORS)
25 AMPERES RMS
25 thru 500 VOLTS
MAXIMUM RATINGS
•
, Rating
Symbol
Repetitive Peak Off-State Voltage (11
-1
ITJ = 110°C)
-2
-3
MAC37
-4
MAC38
-5
-6
-7·
VORM
On-State Current RMS
ITIRMSI
25
Amp
ITSM
225
Amp
12 t
210
A2 s
Peak Gate Power 121
PGM
5.0·
Watts
Average Gate Power
PGIAV)
0.5
Watt
IGM
2.0
Amp
°c
Peak Surge Current
lOne Full cycle, 60 Hz,
TJ = -40 to +1100 C)
Circuit Fusing Considerations
ITJ = -40 to +l100C,
t = 1.0 to 8.3 msl
Peak Gate Current (2)
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque
Value
Unit
Volts
25
50
100
200
300
400
500
TJ
-40 to +110
Tst9
-40to +150
°c
-
30
in. lb.
, MAC31
(1)For either dlrecti.on of blbcking voltage. VORM for all types can be applied on a continuous de basis without Incurring damage. Ratings apply for open gate conditions.
Thyristor devices shall not be tested with a constant currant sourca for blocking capability such that the voltage applied exceods the rated blocking voltage.
(2)T J;; 110°C, 1.0 second maximum duration; 5.0% duty cycle, ITM;; 10 Amp.
THERMAL CHARACTERISTICS
MAC38
Characteristic
Thermal Resistance, Junction to Case
7-144
MAC37-1 thru MAC37-7/MAC38-1 thru MAC38-7 (continued)
ELECTRICAL CHARACTERISTICS (Te = 250 e unless otherwise noted)
Ch_teristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
Rated VDRM @lTJ = 110CC
IDRM
-
-
2.0
mA
On-5tate Voltage (Either D.irection)
ITM = 35 A Peak
VTM
-
1.4
1.9
Volts
IGT
-
20
75
mA
Gate Trigger Current, Continuous de (1)
Main Terminal Voltage = 7.0 Vdc, RL = 47 ohms
MT2(+IG(+I; MT2(-IG(-1
mA
Gate Trigger Voltage, Continuous de 1-11
Main Terminal Voltage ~ 7.0 Vdc, RL = 47 ohmsMT2(+IG(+I; MT2(-lG(-l
VGT
-
1.0
3.0
Volts
VGD
0.2
-
-
Volt
Holding Current (Either Directionl
Main Terminal Voltage =7.0 Vdc, Gate Open,
Initiating Current = 150 mA
IH
-
10
75
mA
Turn-On Time
Ion
-
1.0
-
"S
dv/dt
-
100
-
V/"s
Gat. Trigger Voltage, Continuous de - MT2(+1 G(+I; MT2H GH
Main Terminal Voltage = Rated VORM, RL = 100 ohms, T J = 110CC
ITM
= 25 Adc, IGT = 200 mA
Critical Forward Voltage Application Rate (Exponential Rise
of Voltage I
@l VDRM, TJ = 11OCC, Gate Open
(1)AII voltage polarity reference to main terminal 1.
FIGURE 1 - MAXIMUM THERMAL RESPONSE
1.0
MAC 37
~ 0.5
w'"
>-
~~
O. 2
w ....
MAC 38
--
~.
c
I-
<[
~
illlw
70
a=
w
0:
r--..
::>
180·
300\
~
ill
I-
50 I -
I-
5.0
60 t40 I -
~
~
I-
IS
20
25
o
5.0
"
70
\
~
i'1i
50
i'-.
...........
r-...
\
w
~
..;
'-'
•
I-
"
w
0:
I'-...... ...........
I
o .=CONDUCTIDN ANGLE I
80
::>
.......... 90· .......... 120·........
« 70
~
60
I-
50
i'1i
60·
w
~
« 40
'-'
..;
I-
.J.
10
90
I-
180·
30
20
10
IS
0
25
20
5.0
25
FIGURE 7 - POWER DISSIPATION versus RMS CURRENT
40
40
.1
+--j_-+_+- 120·
30
900
0:
180·
./
~
I<[
~V
~
.= CONDUCTIDN ANGLE +--601-,.~-t~T'l'~b£....j--+--I
~
0:
20
w
20
I:;
>
>
<[
30
25
'"
«
I:;
35
~
~
<[
;;
20
IS
10
IT (RMS). RMS ON-STATE CURRENT (AMP)
FIGURE 6 - POWER DISSIPATION versus AVERAGE CURRENT'
'"
25
100
'-'
0
IT (AV). AVERAGE ON·STATE CURRENT (AMP)
~
w
20
FIGURE 5,.. RMS CURRENT DERATING
30 . ! J \ j f \ . = 3 O .
5.0
i
IS
10
IT(RMS). RMS ON-STATE CURRENT (AMP)
MAC'38 -
t'..::: ~
.~ ["'-..., ~ r----.
<[
I-
"
110
\.
0:
::>
91
-d~"""" V
.=~~
30
10
10
~~
W
-
.=CONDUCTION ANGLE
FIGURE 4 - AVERAGE CURRENT DERATING
90
L.>< ::>::: t'::
oD'" V l/" .......
-18f.'
.J.
IT (AV). AVERAGE ON·STATE CURRENT (AMP)
110
........., ~ ~
20
.=CONOUCTION ANGLE
o
80
70 I -
w
M~C 37- f---
.... ~
90
!;;:
5..;
.J.
30
.10
!a.
.............
120·
90·
100
'-'
r-...
r--.....
~
MAL7-
~
~
..;
'-'
I-
""-
\
so
-- ........... ....
110
.=CONDUCTION ANGLE
15
«
;; 10
<[
a: 5.0
10
<[
.;;:;
o
0
5.0
10
15
20
25
0
2.5
5.0
7.5
10
12.5
IS
17.5
IT (RMS). RMS ON-STATE CURRENT (AMP)
IT (AV). AVERAGE ON-STATE CURRENT (AMP)
7-146
20
22.5
25
MAC37-1 thru MAC37-7/MAC38-1 thru MAC38-7 (continued)
FIGURE 9 - MAXIMUM MUL TI-CYCLE SURGE RATING
FIGURE 8 - MAXIMUM ON·STATE CHARACTERISTICS
-
300
V
200
. / ......
TJ = 25 0C
./
100
,
0
~
...
0
~
~
0
~
10
'"~
7.0
20 0
~'"
15 0
...
~ ~50C
............
i'-..
i"-
w
~
>
1//
~
10 0
"r-..
z
0;
""
~
A
0
0
1.0
/I
w
Z
~
S
I
is
o
25 0
=>
'-'
_7 0
~
~
~
2.0
3.0
'I
5.0 7.0
10
20
r-....
50
30
70
100
FULL CYCLES AT 60 Hz
FIGURE 10 - TYPICAL HOLOING CURRENT
z
~ 5.0
z
I
~
I
~
• 3_0
.~
~
3.0
~
2.0
=>-
f--
...........
'-'z
2. 0
",0
z;::
c~
i5 2:
'-.....
1. 0
~
,",0
Oao
1. 0
~~ O. 7
:::;
o. 7
........
j=
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
4.2
4.6
0.3
0.2
5.0
50
-50
FIGURE 12 - TYPICAL GATE TRIGGER VOLTAGE
FIGURE 11 - TYPICAL GATE TRIGGER CURRENT
~
B
'"
'"'"
ii
~
.0
~
w
...
~
..........
2. 0
.0
~
~
.7
.
O. 5
o
.3
'"
:::;
~
z
2.0
w
~
'"'"
j§
-
1. 0
w
~
N
3.0
ao
w
"
r-- ~~:c~~7g~Ilg~~'R~tTERISTICS
.2
"
~
o.7
.
O.5
o
o. 3
'"~
-.........
N
:::;
...... r-...
~
z
50
50
100
TJ, JUNCTION TEMPERATURE (oCI
VTM,INSTANTANEOUS ON-STATE VOLTAGE (VOLTSI
...
.......
1-- ~~:c~~7gm~!it~tTERISTICS
~
o. 5
o. 3
...
~§ 0.5
o.2
100
TJ, JUNCTION TEMPERATURE (oCI
-
i--
r-- ~~:c~~7g~Ilg~~it~EtTERISTICS
-50
50
TJ, JUNCTION TEMPERATURE (oCI
7-147
100
•
MAC92-1
thru
MAC92-8
MT2
O~----I~~I--G-~OMTI
TRIACS
0.6 AMPERE RMS
30-600 VOLTS
SILICON BIDIRECTIONAL TRIODE THYRISTORS
... designed for use in solid state relays, TTL logic and light indus·
trial applications. Supplied in an inexpensive plastic TO-92 package
which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Triggering Guaranteed in Three Modes
6.0
r--..
--
b-..
...........
-
Quadrants 2 and 3
.............
:--........ ......
.......
~
QUadrtnt 1- I - -
~
4.0
a
3.0
w
'"
'"~
....
w
!;c
-40
10
20
20
+20
, +40
+60
+80
+100
.............
..........
r-......
r-..
.......
2.0
" '-.....
'",.:
0.9
0.8
O. 7
-60
+120 +140
Quadrants 2 and 3
......
r-......
.
"'-....
!E 1.0
o
60
-
.............
1 5.0
...............
..........
-
FIGURE 2 - TYPICAL GATE TRIGGER
CURRENT
7.0
t-.....
o
>
0.1
-
FIGURE 1-TYPICALGATETRIGGER
VOLTAGE
o
2.5
3.5
mA
TC = 25°C
TC = -400 C
Initiating Current = 20 rnA
1.4
IH
Vo = 7.0 Vdc, Gate Open;
w
5.0
VGT
Holding Current
CJ
1.9
mA
Vo = 7.0 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2.0 p.s
MT2(+), G(+); MT2(-), GI-I, MT2(+), GI-I
MT2(+), G(+); MT21-1, G(-), MT2(+), G(-); TC = -40 0 C
Vo = Rated VORM, RL = 10 k ohms, TJ = 110°C
MT2(+), G(+); MT21-1, G(-)
.............
IGT
Gate Trigger Voltage, Continuous de
1. 8
100
Volts
MT2(+), G(+); MT21-1, GI-I, MT2(+), GH
2. 0
-
VTM
Gate Trigger Current, Continuous de
Vo = 7.0 Vdc, RL = 100 Ohms
~
Unit
IlA
IORM
~
Quadrant 1
........
-40
-20
+20
+40
+60
+80
TJ.JUNCTION TEMPERATURE (DCI
TJ. JUNCTION TEMPERATURE IDCI
7-149
+100
+120 +140
•
MAC92-1 thru MAC92-8
FIGURE 3 - AVERAGE CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
0
'"w
95
'"
....
85
~
75
:>
FIGURE 4 - RMS CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
o· CONOUCTION ANGLE
;i
1!l
....
w
5..;
....
65
55
45
1800
35
100
0
300
200
700
800
IT(AV).AVERAGE ON·STATE CURRENT (mA)
ITiRMSI. AVERAGE ON-STATE CURRENT (mA)
FIGURE 5 - AVERAGE CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
(1tY
115
t--...
or-1 ~o-
""l1lI ~
~~
'\
\
5
'""
I\,
\
~ 75f----+--t--+~~~~~~~~~-i
~
....
....
15
,~ t--....<""" 900
~~ k-- 12OO
a.: 30 0 \
'" '" .""-1'-.
'"
60 0"-
50
100
150
200
250
:i
~
:--""'180 0
300
350
55
0;
35
15
0
400
ITiAVI. AVERAGE ON·STATE CURRENT (mA)
200
250
300
IT(RMS). RMS ON·STATE CURRENT (mAl
FIGURE 7 - ON·STATE POWER DISSIPATION
~ 0.8
~o
~
o· CONOUCTION ANGLE
1\
15
•
'"=>
.--
~" ~
5
o
o'-'
w
o· CONDUCTION ANGLE-
"-~
5
FIGURE 6 - RMS CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
FIGURE B - ON-sTATE POWER DISSIPATION
~ 0.8
~
~
~ 0.6 f----+-
~
~
0.6
~
w
w
to
ffi O.41---+----,h4'>1SoL--1-
to
>
;;:
"" 0.21---+U."j--+--1~
ffi
0.4 t---t---t----v"T'71f7.''7''i"sr-.'
-+--t--..,
~ O.2t---t--~~:7':!~;"':"'t--
ITlRMS). RMS ON-STATE CURRENT (mAl
IT(AV). AVERAGE ON-STATE CURRENT (mA)
7-150
MAC92-1 thru MAC92-8
FIGURE 9 -ON-5TATE
CHARACTERISTICS
4.0
.h ~
TJ= l10 DC
•0
'"
.6
il'i
.4
f'"
0
........
7.0
1
,
r-....
.... 5.0
~
'"'"
'"
4.0
.....
,
~
'" 3.0
IV
z
...........
§
.....
~ 2. 0
~
~
"
'"
a'"
~
--
/. ~25DC
1.0
....'"
FIGURE 10 - TYPICAL HOLDING CURRENT
,
.0
1.0
-60
-40
20
+20
+40
+60
+80
+100
+120 +140
TJ.JUNCTION TEMPERATURE (DC)
o. 2
Z
0:>
FIGURE 11 - MAXIMUM ALLOWABLE
SURGE CURRENT
'"
'"z
iil
.1
0
~
~ 0.0 6
~.
.~~ 0.04
.......r-.
.0
i""'-b
~
.0
0.0 2
.0
0.0 I
r--,
0.00 6
0.4
TJ = l10 DC
.J
f = 60 Hz
._1.
Surge is pre~eded and follDwed by rated current.
I
.0
2.0
1.2
2.8
3.6
5.2
4.4
6.0
.
I I IIIII
2
I
10
NUMBER OF CYCLES
VTM.INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
I
I
3D
50
100
•
FIGURE 12 - THERMAL RESPONSE
~
1.0
N
:l
'"
iii
0.5
0:>
;0
w
u
0.2
~
fZ
O. I
z
I-- f~
ZOJC(t) = r(l) - ROJC
a:
~
~ 0.05
"....
~
in
~
::
0.0 2
,
0,0 I
2.0
5.0
10
20
50
100
200
I. TIME
7-151
(m.1
500
1.0 k
2.0k
5.0 k
10 k
20 k
M8S4991
M8S4992
MT2
OO-.....,~I-II:f'I-+--OO MTI
SILICON
BIDIRECTIONAL SWITCH
(PLASTIC)
BIDIRECTIONAL DIODE THYRISTORS
· .• designed for full·wave triggering in Triac phase control circuits,
half-wave SCR triggering application and as voltage level detectors.
Supplied in an inexpensive plastic TO-92 package for high-volume
requirements, this low-cost plastic package is readily adaptable for use
in automatic insertion equipment.
.
• Low Switching Voltage - 8.0 Volts Typical
• Uniform Characteristics in Each Direction
•
•
•
MT2
Low On-State Voltage - 1.7 Volts Maximum
Low Off-State Current - 0.1 /lA Maximum
Low Temperature Coefficient - 0.02 %/OC Typical
I1~B
SEATINGP~i'---' --
A
H ---
t
PLANE F
L
_.1
•
K
I
MAXIMUM RATINGS
Symbol
Value
Unit
Power Dissipation
Rating
Po
500
mW
DC Forward Current
IF
200
mA
DC Gate Current (off-sIal. only!
IG(offl
5_0
mA
Repetitive Peak Forward Current
IFM(rep!
2.0
Amp
IFM(nonrep)
6.0
Amp
TJ
-5510 +125
°c
(1.0% Duty Cycle, 10", Pulse
Width, T A = 1000C!
Non.Repetitive Forward Current
10 u, Pulse Widlh T ..
= 25°C
Operating Junction Temperature
Range
Storage Temperature Range
T'lg
-6510 +150
°c
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
MILLIMETERS
MIN MAX
4.32
&.33
4.44
&.21
B
3.1B
4.19
C
D
0.41
0.&6
f
0.41
0.48
1.14
1.4D
G
H
2.54
2.41
2.67
J
K 12.70
L
6.35
N
2.03
2.92
P
2.92
3.43
R
0.41
S
D.36
DIM
A
-
-
-
INCHES
MIN MAX
0.170 0.210
0.175 0.20&
0.12& 0.16&
0.D16 0.D22
0.016 D.019
0.045 D.O&&
D.l0D
D.09& D.l0&
0.500
0.250
D.DBD D.115
0.115
10.135
0.D14 0.D16
-
-
All JEDEC dimensions and notes applv.
CASE 29-D2
TO-92
PLASTIC
7-152
MBS4991, MBS4992
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol
Characteristic
Max
6.0
7.5
8.0
8.0
10
9.0
-
175
90
500
120
-
-
0.3
0.1
0.5
0.2
-
-
100
-
0.7
0.2
1.5
0.5
-
0.08
2.0
0.08
6.0
1.0
10
0.1
10
-
-
1.4
1.5
1.7
1.7
-
Unit
IS
Switching Current
ItAde
MBS4991
MBS4992
IVS1-VS21
Switching Voltage Differential
Vde
MBS4991
MBS4992
Gate Trigger Current
IGF
= 5.0 Vde RL = 1.0 K ohml
MBS4992
/lAde
IH
Holding Current
mAde
MBS4991
MBS4992
IB
Off·State Blocking Current
(VF = 5.0 Vdc. T A = 250 CI
(VF = 5.0 Vde. T A = B50 CI
(VF = 5.0 Vdc. T A ~ 250 CI
(VF = 5.0 Vdc. T A = 1000CI
MBS4991
MBS4991
MBS4992
MBS4992
/lAde
-
-
,
VF
Forward On-State Voltage
(IF
(IF
Typ
Vde
MBS4991
MBS4992
(VF
Min
Vs
Switching Voltage
= 175 mAdel
= 200 mAdel
Vdc
MBS4991
MBS4992
Peak Output V'lltage (Cc =0.1 /IF. RL - 20ohms. (Figure7l
Va
3.5
4.8
"-urn-On Time (Figure 8)
tan
1.0
Tum-Off Time (Figure 91
taft
Temperature Coefficient of Switching Voltage (-50 to +1250 C)
TC
-
30
+0.02
Vde
/lS
ItS
%/oC
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - SWITCHING CURRENT versus TEMPERATURE
FIGURE 1 - SWITCHING VOLTAGE versus TEMPERATURE
B.O
1.04
ffi
~
N
1.03
'"o
1.02
w
1.0 1
:::;
~
!!!.
~
~
o
1.00
I--V
>
~
0,9 9
~
I-
0,98
~
~
--
...........
/
.....-
;::
6.0
~
5.0
~
4.0
....
B
3.0
5....
2.0
'"z
~
!!!
0.96
-50
-25
+25
+50
\
\.
'or
0,9 7
-75
1.0
:::;
'"
+75
+100
+125
f'...
~
1.0
o
-75
-50
-25
--
+25
I--
+50
TA. AMBIENT TEMPERATURE (DC)
TA. AMBIENT TEMPERATURE (DCI
7-153
+75
+100
+125
M 854991, M 854992
FIGURE 4 - OFF-STATE BLOCKING CURRENT
versus TEMPERA TURE
. FIGURE 3 - HOLDING CURRENT versus TEMPERATURE
10.0
80
~::;
Normalized
« 6.0
~
c
z
~a
'"
z
\
5.0
4.0
10
25°C
2.0
~
1.0
~
- f---
a
!
w
'" -
>«
o
-50
-25
+25
0.1
t<;
'-....
-75
VF-5_0V- ' - 1.0
'"z
\\
3.0
§
c
:r
1
>-
7.0
~
~
'"IE
+50
+75
+100
.;'
0.01
+125
-50
-25
TA. AMBIENT TEMPERATURE 1°C)
+25
FIGURE 5 - ON-STATE VOLTAGE versus FORWARD CURRENT
7. 0
~
-
1.0
w
>-
«
5.0
'"
4.0
C;
o
>
>-
~
3.0
:::.:::
2.0
0.1
1::c
~
~
..--
~~
/
'-I
C
/'
~RL=500<>
....;
-RL=100<>
:::.::
= 50 <>
RL = 20 <>
~L
/'
iLTl1
.; 1.0
>
u:
0.01
•
~
'"
z
«
'"
6.0
c
t<;
c
c
o
1.0
2.0
3.0
+100 +125
----
,;0
'"
>~
a
+75
FIGURE 6 - PEAK OUTPUT VOL TAGE (FUNCTION OF RL AND Ce )
10
S
+50
TA. AMBIENT TEMPERATURE 10C)
4.0
5.0
DOl
0.02
0.05
0.1
0.2
II
0.5
TA = 25°C
1.0
Ce• CHARGlNG CAPACITANCE I"F)
VF. FORWARO ON-STATE VOLTAGE IVOLTS)
FIGURE 7 - PEAK OUTPUT VOLTAGE TEST CIRCUIT
10 K
D.U.T.
L
7-154
2.0
5.0
10
M 8S4991, M 8S4992
FIGURE 8 - TURN-ON TIME TEST CIRCUIT
Mercury Relay
,-OH!
Anode
Voltage
~12V
,-o_n
Vs
D.U.T.
,
____I ton II-I
Turn-on time is measured from the time
,
Vs is achieved to the time when the anode voltage drops to within 90% of the difforence between Vs and VF-
FIGURE 9 - TURN-OFF TIME TEST CIRCUIT
Anode
soon
100n
+
5.0 V
Voltage
C
-=-
MT2
Mercurv
Relpv
O.U.T.
(N.O.1
~
________-4____________________
~MT1
With the SSS in conduction and the relay contacts open, close the contacts to cause anode A2 to be driven negative. Decrease C until the SSS
just remains off when anode A2 becomes positive.
The turn-off time. toff. is the time from initial contact closure and until anode A2 voltage
reaches zero volts.
FIGURE 10 - DEVICE EQUIVALENT CIRCUIT. CHARACTERISTICS AND SYMBOLS
MT2
MT2
G
----~~=-----+_---=~~------~~+v
MT1
CIRCUIT SYMBOL
-,
MT1
eQUIVALENT CIRCUIT
7-155
CHARACTERISTICS
•
MCR63·1 thru 10
MCR64-1 thru 10
M~R6S·1 thru 10
REVERSE BLOCKJNG TRIODE THYRISTOR
SILICON CONTROLLED
RECTIFIER
· .. designed for industrial and consumer applications such as power
supplies; battery chargers; temperature,. motor, light, and welder
controls.
55 AMPERES RMS
25-800 VOLTS
•
Economical for a Wide Range of Uses
•
•
High Surge Current - ITSM = 550 Amp
Rugged Construction in Either Pressfit, Stud, or Isolated Stud
'. Glass Passivated Junctions for Maximum Reliability
CASE 310'()1
MAXIMUM RATINGS
MCA63
Rating
Symbol
Peak' Repetitive Forward and Reverse
VDRM(lI
or
Blocking Voltage
MCR63
MCR64
MCR65
r
r
-2
-3
-4
-5
-6
-7
VRRM
-8
-9
-10
Non-Repetitive Peak Reverse
Blocking Voltage
(t5:5.0m,)
•
MCR63
MCR64
MCR65
Forward Current RMS
,Value
25
50
100
200
300
400
500
600
700
800
Volts
VRSM
IT(RMS)
35
75
150
300
400
500
600
700
800
900
55
Amp
ITSM
550
Amp
12,
1255
-2
-3
-4
-5
-6
' -7
-8
-9
-10
Peak Surge Current
Unit
Volts
(T J = -40 to
+1250 C)(t =
< 2 ,",51
A2,
PGFM
20
PGF(AV)
0.5
Watts
Watt
IGFM
2.0
VGFM
VGRM
10
10
Volts
TJ
-40 to +125
T stg
-40to+150
°c
°c
-
30
in. lb.
Characteristic
Isolat~
Stud
I. CATHODE
2. GATE
CASE. ANODE
Elil t: l:J1dJ:!CASE3~ID'"~
A
•
C
F
G
H
J
Symbol
Max
Unit
°C/W
R8JC
1.0
1.1
MILLIMETERS
M'N MAX
14020
12.73 1283
32.51
'06
2.16
0085
16.
101 0063
10.61 1156 0420
0300
0.255
2.16
1.40
3.81
343
"
-
24'
.
• '62, ."
'"
•
T
7-156
.....'35 "50"50
0215
008.
MCR64 se,io.
STYLE 1:
PIN I. CATHODE
Z.GATJ;
3. ANODE
III_ MIN
'NCHES
••
MAl
1534 15.60
1400 14.20
26.1 0.23
43 4.06
2.29 REF
10.711.58
15.75 n.02
,.
D..604 0.614
0.5510.55
1.0501.190
0.1350.160
0.090 REF
0.420
455
0.620
0.&7
Q.5Gl
0.505
1
12.'1312.83
(1)VRRM for all types can be applied on a continuous de basis without incurring damage
Rating$ applv for zero or negative gata voltage. Devices shall not have a positive bias applied
to the gate concurrently with a negative p~tential on the anode.
X
.559
0.505
1.280
O.IGB
0095
0019
0455
CASE 311·01
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Pressfit and Stud
MCR63se,ias
0'.
Peak Gate Voltage - Forward
Reverse
Stud Torque
series
3. ANODE
Amp
Opera,ing Junction Temperature Range
~
MCA64
STYLE I
H --
Peak Forward Gate Current
Storage Temperature Range
CASE 263'()3
sarie,
l
I
Average Gate Power (Pulse Width
MCA66
MCR65se,ias
1.0 to 8.3 m,)
Peak Gate Power
CASE 311'()1
STYLE I'
I. CATHODE
2. GATE'
(One cycle. 60 Hz) (T J = -40 '0 + 12SoC)
Circuit Fusing Considerations
,aria'
CASE2I3.Qa
MCR63-1 thru10, MCR64-1 thru10, MCR65-1 thru10
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted)
Characteristic
Peak Forward Blocking Current
IV 0 = Rated V ORM. with gate open. T J
~
Min
Max
Unit
IORM
-
2.0
rnA
IRRM
-
2.0
rnA
VTM
-
2.0
Volts
-
40
75
-
3.0
3.5
125°C)
Peak Reverse Blocking Current
IVR
Symbol
= Rated VRRM. with gate open. TJ = 125°C)
Forward "On" Voltage
IITM = 175 A Peak)
Gate Trigger Current (Continuous dcl
IVO = 12 V. RL = 50 n)
Gate Trigger Voltage (Continuous de)
IVO = 12 V. RL = 50 nr
IVO
0.2
-
IH
-
60
rnA
dv/dt
50
-
V/~s
= 50 n. Gate Open)
Forward Voltage Application Rate
IT J = 125°C. Vo = Rated VORM)
FIGURE 1 - AVERAGE CURRENT DERATING
~
~
10 5
~~
5
~
65
i'"
45
'"
25
...
;:3
x
...'"U
Volts
VGT
TC = 25°C
TC = -40°C
= Rated VORM. RL = 1.0 kn. TJ = 125°C)
Holding Current
IVO = 12 V. RL
125
rnA
IGT
TC = 25°C
TC = -40°C
~~
.~ ~ ~
1\
\
"-
1\
FIGURE 2 - POWER DISSIPATION
~ 60
~
"\ "
...... ........
........
........
i
Th
-r. .........
'" 50
3:
~
60·
40
Q'''
..........
30 0
IIJV
60·
90·
ro
w
I
/
/
L{' -
/
V
-"
Irl..
-r-- ~i r-
./
II/,: V
180·
Derate MCR65 series
by an additional 10%.
w
I /
./
180·
~ /
I I
I 1// / . /
de
\
a - 30 0
I
9~.
I
~
I
I
~
I/. (p
-
-
l.,
60
ITIAV). AVERAGE ON·STATE CURRENT lAMPS)
7-157
~
10
20
30
40
50
ITlAV). AVERAGE ON·STATE CURRENT lAMPS)
60
•
MeRlO 0 series
A
O>-----l.~~_G
0
K
PLASTIC SI LICON
CONTROLLED RECTIFIERS
O.B AMPERE RMS
100 to 600 VOLTS
REVERSE BLOCKING TRIODE THYRISTORS
PNPN devices designed for high volume, line·powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexPensive plastic TO·92 package which is readily
adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current - 200l1A Maximum
•
Low Reverse and Foryvard Blocking Current 100 I1A Maximum, T C = 125 0 C
•
Low Holding Current - 5.0 mA Maximum
A
• Glass·Passivated Surface for Reliability and Uniformity
•
Also Available with TO-5 or TO-18 Lead Form
MAXIMUM RATINGS
Symbol
Rating
Peak Reverse Blocking Voltage
•
Value
Unit
Volts
VRRM
MCR100·3
MCR100-4
MCR 100·5
MCR100-6
MCR100·7
MCR100·B
Forward Current RMS (See Figures 1 & 2)
100
200
300
400
500
600
ITIRMS)
O.B
Amp
'TSM
10
Amp
(All Conduction Angles)
Peak Forward Surge Current, T A - 2SoC
(112 cycle, Sine Wave, 60 Hz)
STYLE 10:
121
Circuit Fusing Considerations, T A = 25°C
II = 1.010 B.3 ms)
Peak Gate Power - Forward, T A = 25°C
Average Gate Power - Forward, TA - 25°C
Peak Gate Current - Forward. T A
1300 "s, 120 PPS)
= 2SoC
Peak Gate Voltage - Reverse
0.415
A 2s
PGM
0.1
Watt
PGFIAV)
0.01
Watt
IGFM
1.0
Amp
5.0
Volts
VGRM
Operating Junction Temperature Range@ Rated
VRRM and VORM
TJ
-40 to +125
°c
Storage Temperature Range
T stg
-40 to +150
-
+230
°c
°c
Lead Solder Temperature
«1/16" from case, 10s max)
THERMAL CHARACTERISTICS
Characteristic
ThermClI Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
T
Symbol
R 8JC
I
I
Max
I
75
I
I
°C/W
I
R8JA
I
200
I
°C/W
7-158
Unit
PIN 1.
2
3.
CATHOOE
GATE
ANODE
MILLIMETERS
INCHES
MIN MAX
MIN MAX
4.32
5.33 0170 0.210
4.44
5.21 0.175 0.205
, B
C
318
4.19 0.125 0.165
0.41
0
056 0.016 0.022
F
0.41
0.48 0016 0.019
1.14
1.40 0045 0.055
G
0.100
H
254
2.4j
J
2.67 0.095 0.105
K 12.70
0.500
L
6.35
0.250
N
2.03
2.92 O.OBO 0.115
P
2.92
0.115
3.43
R
0.135
s 0.36 0.41 0.014 O.or6
All JEOEC dimensions and notes apply.
CASE 29-02
TO·92
DIM
A
Me R 100. series
ELECTRICAL CHARACTERISTICS (RGK = 1000 Ohms)
Symbol
Characteristic
Peak Forward Blocking Voltage
(TC
Min
Max
= 125°C)
MCR100·3
MCR100-4
MCR 100·5
MCR100-6
MCR100·7
MCR 100·8
Unit
Volts
VDRM
100
200
300
400
500
600
Peak Forward Blocking Current
(Rated VDRM @TC ':' 125°C)
IDRM
-
100
"A
Peak Reverse Blocking Current
(Rated VRRM@TC = 125°C)
IRRM
-
100
"A
Forward "On" Voltage (Note 11
VTM
-
1.7
Volts
TC - 25°C
IGT
-
200
I'A
Gate Trigger Voltage (Continuous de)
(Anode Voltage = 7.0 Vdc. RL = 100 Ohms)
(Anode Voltage = Rated VDRM. RL = 100 Ohms)
TC - 25°C
TC = -40°C
TC = 125°C
VGT
-
0.8
1.2
Volts
Holding Current
(Anode Voltage
TC - 25°C
IH
(lTM = LOA peak@TA=25oC)
Gate Trigger Current (Continuous del (Note 2)
(Anode Voltage = 7.0 Vdc. RL = 100 Ohms)
= 7.0
Vdc, initiating current
= 20 rnA)
TC = -40°C
0.1
-
-
5.0
10
mA
NOTE:
1. Forward current applied for 1.0 ms maximum duration, duty cycle "- 1.0%.
2. RGK current is not included in measurement.
FIGURE 1 - CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
I;' 130
w
~
~~_
~
w
1=
I~ ~ ::--'--~ r--..
110
'\ ~ ~
i'il
90
\
~
~"'
80
'"
70
~
'"
60
'"'"
50
x
oj
I-
0:=
o
130,---,,---,----,----,----~--~----~--,
0CONJUCTlO~ ANG~E ./110
120 ~ 10:::-
~ 100
FIGURE 2 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
0.1
~'
-
""
"
30 0
0.2
CASE MEASUREMENT
POINT - CENTER OF
--........!:~T PORTION
'"""- ~
0....... ~
SO}. 120·
60·
0.3
~ ~O.
0.4
0.5
ITlAV). AVERAGE ON·STATE CURRENT (AMP)
ITlAV). AVERAGE ON-STATE CURRENT (AMP)
7-159
•
MeRIOI
thru
MCRI04
~t-~-G-o K
A o----1. .
SILICON
CONTROLLED RECTIFIERS
0.8 AMPERE RMS
15 thru 100 VOLTS
REVERSE BLOCKING TRIODE THYRISTOR
· .. Annular. PNPN devices designed for low cost, high volume con·
sumer applications such as relay and lamp drivers, small motor
controls, gate drivers for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO·92 package' which is
readily adaptable for use in automatic insertion equipment.
,. Sensitive Gate Trigger Current - 200 IlA Maximum
•
.
Low Reverse and Forward Blocking Current 100 IlA Maximum, TC = 85 0 C
•
Low Holding Current - 5.0 mA Maximum
•
Passivated Surface for Reliability and Uniformity
•
Also available with TO-5 or TO-18 Lead Form
A
MAXIMUM RATINGS(1)
Rating
lIymbol
Peak Reverse Blocking Voltage
IRGK
•
= 1000 ohms, TC =
+85 0 C)
Value
MCR10l
MCR102
MCR103
MCR104
Forward Current RMS (See Figures 1 &·2)
Unit
Volts
VRRM
15
30
60
100
ITIRMSI
0.8
Amp
ITSM
10
Amp
12t
0.415
A2,
0.1
Watt
(All Conduction Angles)
Peak Forward Surge Current, T A = 2SoC
11/2 cycle, Sine Wave/60 Hzl
Circuit Fusing Considerations, T A = 2SoC
It = 1.0 to 8.3 m,l
Peak Gate Power - Forward. T A = 2SoC
Average
G~te
Power - Forward, T A = 2SoC
Peak Gate Current - Forward, T A - 25v C
PGM
0.01
Watt
IGM
1.0
Amp
VGM
4.0
Volts
PGIAVI
STYLE lU'
PIN 1. CATHODE
2. GATE
3. ANODE
13001", 120 PPSI
Peak Gate Voltage - Reverse
Operating Junction Temperature Range@ Rated
TJ
-65 to +85
°c
T stg
-65 to +150
-
+230
°c
°c
Symbol'
VRRM and VORM
Storage Temperature Range
Lead Solder Temperature
1<1/16"fromcase,10,maxl
THERMAL CHARACTERISTICS
Max
Unit
Thermal Resistance, Junction to Case
R8JC
75
°C/W
Thermal Resistanct!, Junction to Ambient
R8JA
200
°C/W
Characteristic
+Annular Semiconductor Patented by Motorola Inc.
(1) Temperature reference point for all case temperature is center of flat
portion of package.
(TC:: +8SoC unless otherwise noted.)
7-160
MILLIMETERS
MIN MAX
4.32
5.33
4.44
B
521
C
318
4.19
0.41
0.56
0
F
0.41
048
G
114
1.40
H
2.54
J
'2.41
2.67
K
12.70
L
6.35
2.03
292
P
2.92
3.43
'R
S
0.36
0.41
DIM
A
--tL
INCHES
MIN MAX
0.170 0.2lU
0175 0205
0125 0165
0.016 0.022
0016 0.019
0045 0.055
0.100
0.095 0.105
0.500
0.250
0080 0.115
0.115
0135
0014 0.016
All JEOEC dimenSIons and nOlesapply.
CASE 29·02
TO·92
MCR101 thru MCR104
ELECTRICAL CHARACTERISTICS (RGK = 1000 Ohms)
Symbol
Characteristic
Peak Forward Blocking Voltage (Note 1)
ITC
= 85°C)
MCR101
MCR102
MCR103
MCR104
Peak Forward Blocking Current
IRated VDRM @TC
IDRM
Unit
Min
Max
15
30
60
100
-
-
100
I'A
100
I'A
Volts
VDRM
-
=85°C)
Peak Reverse Blocking Current
IRated VRRM @TC = 85°C)
IRRM
Forward "On" Voltage INote 2)
IITM = 1.0 A peak @ T A = 25°C)
VTM
-
1.7
Volts
IGT
-
200
I'A
VGT
-
0.8
1.2
VGD
0.1
-
IH
-
S.O
10
= 25°C
Gate Trigger Current (Continuous dc) (Note 3)
(Anode Voltage = 7.0Vdc, RL = 100 Ohms)
TC
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 Ohms)
TC - 2SoC
TC = -6SoC
TC = 85°C
Holding Current
(Anode Voltage
TC = 2SoC
TC = -6SoC
= 7.0 Vdc,
initiating current = 20 rnA)
1. VORM and VRRM for all types can be applied on a continuous
de basis without incurring damage. Ratings apply for zero or
applied concurrently with a negative potential on the anode.
When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source
FIGURE 1 - CURRENT DERATING
IREFERENCE: CASE TEMPERATURE)
=-
-r----.
a=
CA:EN~~~SUREMENT
FLAT PORTION
1'-.. . . . . . 0 ~
\ "'.""
300
"'1'..'
o
0.1
0.2
RGK current is not included in measurement.
--
60 0
90 0
.:::::
0.3
I -
N~
IS::
120 0
10
3.
POINT - CENTER OF
~ ~ ~ t-....
\.
Forward current applied for 1.0 ms maximum duration, duty
cycle S 1.0%.
A
""COI'OUCT'!'
~ ~ ;::-- r-
2.
FIGURE 2 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
90
0.4
mA
in a manner that the voltage applied exceeds the rated blocking
voltage.
negative gate voltage but positive gate voltoge shall not be
~
-
Volts
'"
180 0
0.5
IFIAV), AVERAGE FORWARD CURRENT lAMP)
IFIAV), AVERAGE FORWARD CURRENT IAMPI
7-161
MCR106·1
thru
MCR106·8
SILICON CONTROLLED
RECTIFIERS
4.0 AMPERES RMS
30 thru 600 VOL TS
REVERSE BLOCKING TRIODE THYRISTORS
· .. PNPN devices designed for high volume consumer applications
such as temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation is
important.
• Glass·Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
•
Practical Level Triggering and Holding Characteristics
•
Flat. Rugged, ThermopadA'Construction for Low Thermal Resist·
ance, High Heat Dissipation and Durability.
G
K
MAXIMUM RATINGS
Symbol
Rating
Peak Reverse Blocking Voltage
INote 11
•
Vallie
,
MCR 106·1
·2
·3
-4
-5
~6
-7
-8
RMS Forward Current
IT(RMS)
Unit
Volts
VRRM
30
60
100
200
300
400
500
600
4.0
Amp
(All Conduction Angles)
Average Forward Current
2.55
0.68
Peak Non-Repetitive Surge Current
(112 cycle, 60 Hz, T J
= -40 to +11 OOC)
Circuit Fusing Considerations
(TJ
Amp
IT(AV)
TC = 93°C
TA = 30°C
ITSM
25
Amp
12 t
2.6
A2s
PGM
0.5
0.1
Watt
=-40 to +1100 C. t = 1.0 to 8.3 ms)
Peak Gate Power
Average Gate Power
DIM
PG(AV)
Watt
Peak Forward Gate Current
IGM
0.2
Amp
Peak Reverse Gate Voltage
VRGM
6.0
Volts
TJ
T stg
-40 to +110
°c
Operating Junction Temper~ture Range
Storage Temperature Range
-40 to +150
6.0
Mounting Torque (Note 2)
°c
in. lb.
Characteristic
-
Thermal Resistance. Junction to Ambient
A
B
C
D
F
G
H
J
K
M
n
THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case
STYLE 2
PIN I. CATHODE
2. ANODE
3. GATE
Symbol
Max
Unit
. R6JC
3.0
75
°CNV
uCNV
R6JA
...Trademark of Motorola Inc.
7-162
R
S
U
V
MIN MAX
10.80 11.05
7.49
7.75
2. 1 2.67
O. I
0.66
2. 2 3.18
2.31
2.46
1.27
2.41
0.38
0.64
15.11 16.64
3D TYP
3.76
4.01
1.14
1.40
0.64
0.89
3.68
3.94
1.02
CASE 77·04
MCR106-1 thru MCR106-8
ELECTRICAL CHARACTERISTICS (TC
= 25°C and
RGK
= 1000 ohms unless otherwise noted)
Characteristic
Peak Forward Blocking Voltage
(TJ = 110°C, Note 1)
Symbol
Min
Typ
Max
MCR106-1
-2
-3
-4
-5
-6
-7
-8
Unit
Volts
VORM
-
30
60
100
200
300
400
500
600
-
-
-
-
-
-
Peak Forward Blocking Current
(Rated VORM, TJ = 1100 CI
IORM
-
-
200
~A
Peak Reverse Blocking Current
IRRM
-
-
200
"A
VTM
-
-
2.0
Volts
-
200
500
IRated VRRM, TJ = 110°C)
Forward "On" Voltage
IITM = 4.0 A Peak)
Gate Trigger Current (Continuous de) Note 3
j,.A
IGT
= 100 ohms)
= 100 ohms, TC = -40°C)
-
-
Gate Trigger Voltage (Continuous dcl
IVAK = 7.0Vdc,RL = 100 ohms, TC = 25°C)
VGT
-
-
1.0
Volts
Gate Non-Trigger Voltage
VGO
0.2
-
-
Volts
IH
-
-
5.0
mA
dv/dt
-
10
-
V/~s
(V AK = 7.0 Vdc, RL
IVAK = 7.0 Vdc, RL
IV AK = Rated VORM, RL = 100 ohms, T J = 110°C)
Holding Current
(V AK = 7.0 Vdc, TC = 25°C)
Forward Voltage Application Rate
(TJ = 110°C)
NOTES'
1. Ratings apply for zero or negative gate voltage but positive
gate voltage shall not be applied concurrently with C1 negative
potential on the anode.
When checking forward or reverse
blocking capability, thyristor deVices should not be tested With
2. Torque ratmg applies With use of torque washer (Shakeproaf
WD19523 or equivalent). Mounting torque In excess af 6 in. lb.
does not appreciably lower case-to-sink thermal resistance. Anode
lead and heatsink contact pad are common. (See AN-290 BI
a constant current source in a manner that the voltage applied
exceeds the rated blocking voltage.
For soldering purposes (either terminal connection or deVice
mounting), soldering temperatures shall not exceed +225 0 C. For
optimum results. an activated flux (oxide removing) isrecomrnended.
3. RGK current is not included in measurement.
CURRENT DERATING
FIGURE 1 - MAXIMUM CASE TEMPERATURE
FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE
30~O--~O~.1~~O~.2~--of.3~--~~~~--~--~~--~
ITIAVI, AVERAGE fORWARD CURRENT IAMPI
ITIAV), AVERAGE fORWARD CURRENT (AMPI
7-163
•
MCRIIS
MCRl20
AO_-I.~(_G_o K
PLASTIC SILICON
CONTROLLED RECTIFIERS
0.8 AMPERE RMS
100 and 200 VOLTS
REVERSE BLOCKING TRIODE THYRiSTORS
Annuiar. PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO·92 package which is readily
adaptable for use in automatic inse~tion equipment.
• Sensitive Gate Trigger Current - 200 /JA Maximum
•
Low Reverse and Forward Blocking Current 100/JAMaximum, TC': 1100 C
•
Low Holding Current - 5.0 mA Maximum
• Passivated Surface for Reliability and Uniformity
• Also Available with TO~5 or TO-l B Lead Form
MAXIMUM RATINGS(1)
Symbol
Rating
Peak Reverse Blocking Voltage
g'
Value
MCRl15
MCR120
Forward Current RMS (See Figures 1 & 2)
IT(RMS)
Unit
Volts
VRRM
150
200
0.8
. MB
Amp
(All Conduction Angles)
Peak Forward Surge Current, T A
=
25°C
ITSM
10
Amp
12,
0.415
A2,
(112 cycle, Sine Wave, SO Hz)
Circuit Fl;Ising Considerations, "'FA - 25°C
P~lE':frl
---
H
SEATING
PLANE F
Average Gate Power
Peak Gate Current
Forward, T A
Forward, TA
= 25°C
25 C
PGM
0.1
Watt
PGF(AV)
0.01
Watt
IGFM
1.0
Amp
VGRM
5.0
Volts
TJ
-S5 '0+110
°c
rl
R
,
~-<>-o
L' "
N
----.1
K-
I
(, = 1.0 '08.3 m,)
Peak Gate Power - Forward, T A - 25u C
A
Dj'~
~G
J i-,:
N
STYLE 10:
PIN 1. CATHODE
~
2.
GATE
3. ANODE
S
SECT. A·A
(300I",120PPS)
Peak Gate Voltage - Reverse
Operating Junction Temperature Range@ Rated
VRRM and VDRM
Storage Temperature Range
Lead Solder Temperature
T stg
-65 to +150
°c
-
+230
°c
«IllS" from case, 10 s max)
DIM
A
4.32
B
4.44
C
3.1B
0 . 0.41
F
0.41
G
1.14
H
J
K
L
N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
+Annular Semiconductor Patented by Motorola Inc.
(11 Temperature reference point for all case temperatures in center of flat portion
of package, (T C = + 11 OoC unless otherwise noted.)
.1-164
MILLIMETERS
MIN MAX
-
5.33
5.21
4.19
0.56
0.48
1.40
2.54
2.67
C
INCHES
MIN MAX
0.110
0.115
0.125
0.016
0.016
0.045
-
0.210
0.205
0.165
0.022
0.019
0.055
0.100
0.105
2.41
0.095
12.70
0.500
6.35
11250
2.03
2.92 O.OBO 0.115
P
2.92
0.115
R
3.43
0.135
S
0.36
0.41 0.014 0.016
All JEDEC dimensions and notes apply,
-
CASE 2U-02
TO·92
-
MCR115, MCR120
ELECTRICAL CHARACTERISTICS (RGK = 1000 Ohms)
Symbol
Characteristic
Peak Forward Blocking Voltage (Note 11
Min
Max
Unit
Volts
VDRM
150
200
-
IDRM
-
100
IJA
IRRM
-
100
IJA
VTM
-
1.7
Volts
TC = 25°C
IGT
-
200
IJA
Gate Trigger Voltage (Continuous del
(Anode Voltage = 7.0 Vdc, RL = 100 Ohms)
(Anode Voltage = Rated VDRM, RL = 100 Ohms)
TC = 25°C
TC = -65°C
TC = 110°C
VGT
-
0.8
1.2
Volts
VGD
0.1
-
Holding Current
(Anode Voltage
TC = 2SoC
TC = -65°C
IH
-
5.0
10
(TC = 110°C)
MCRl15
MCR120
Peak Forward Blocking Current
(Rated VDRM@TC= 110°C)
Peak Reverse Blocking Current
(Rated VRRM@TC= 110°C)
Forward "On" Voltage (Note 2)
(lTM = 1.0 A peak @ T A = 25°C)
Gate Trigger Current (Continuous del (Note 3)
(Anode Voltage = 7.0 Vdc, RL = 100 Ohms)
1.
= 7.0 Vdc,
initiating current = 20 rnA)
VORMsnd VRRMforall types can be applied on acdntinuous
de basis without incurring damage. Ratings apply for zero or
in a manner that the voltage applied exceeds the rated block ing
voltage.
negative gate voltage but positive gate voltage shall not be
applied concurrently with a negative potential on the anode.
When checking forward or reverse blocking capability. thyristor devices should not be tested with a constant current source
2.
Forward current applied for 1.0 ms maximum duration, duty
cycle ::S' 1.0%.
3.
RG K current is not included in measurement.
FIGURE 1 - CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
-110
~
100
","""
~
110
I'" 30
0
~T
~
tl"'CONOUCTION
f-- ANGLE
CASE MEASUREMENT
POINT - CENTER OF
40 t----FLrpORTiON
100 f-....,,"""~.....,--+---+
I--
~~
"\
30
FIGURE 2 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
~ ~ r--
~~
"'-i'-:: r':::
D-
~
90
0
r--- r--.
U
~~ 90~--f~~~~~~-4-~~~--r--+--~
""~
de
.............
..........
'" ""
~
.......
120 0
I
W
180 0
E; ~
~""
~~
80 f--+-..,...p.~"".--''k--1--+--+---1
~ ~ 70f--+--~-'H""'''''+~c-'1''-+--+---1
:§~
x
""",,
I-
60
,"w
~~ 50f--+--+--\+-~~~~~-+-~~--1
40~-+---r-~~~\-~~~~--+-~~
30L-_~
o
0.1
0.2
mA
Q.3
0.4
o
0.5
__~___Li-~~~~~~--~--~
01
IF(AV), AVERAGE FORWARD CURRENT (AMP)
IF(AV), AVERAGE FORWARD CU RRENT (AMP)
7-165
04
•
MCR20!
thru
MCR206
G
A
o>-----l~~~_O K
SILICON
CONTROLLED RECTIFIERS
0.5 AMPERE RMS
15-200 VOLTS
REVERSE BLOCKING TRIODE THYRISTORS
· .. Annular. PNPN devices designed for industrial/military applica·
tions such as relay and lamp drivers, small motor controllers and
drivers for larger thyristors, and in sensing and detection circuits.
•
•
•
Sensitive Gate Trigger Current - 200llA Maximum
Low Reverse and Forward Blocking Current lOOIlA Maximum, TC = 1250 C
Low Holding Current - 5.0 mA Maximum
• Passivated Surface for Reliability and Uniformity
• TO-18 Hermetically Sealed Metal Package
MAXIMUM RATINGS
Symbol
Rating
Peak Off-State and Reverse Voltage
•
Value
MCR201
MCR202
MCR203
MCR204
MCR205
MCR206
ITIRMS)
15
30
60
100
150
200
0.5
Amp
ITSM
6.0
Amp
12t
0.15
A2s
PGM
PGFIAV)
IGFM
0.1
0.01
1.0
Watt
Watt
Amp
VGRM
TJ
4.0
-65 to +125
Volts
°c
Tstg
-65 to +150
(
RMS On·5t8te Current
Unit
Volts
VORM
VRRM
SEATING
PLANE
IAII Conduction Angles)(See Figs. 4 & 5)
Peak Non-Repetitive Forward Surge Current
1112 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations,
It
=
1.0 to 8.3 ms)
Peak Forward Gate Power
Average Forward Gate Power
Peak Forward Gate Current
1300 I'S, 120 PPS)
Peak Reverse Gate Voltage
Operating Junction Temperature Range @ Rated
VRRM and VORM
Storage Temperature Range
C
THERMAL CHARACTERISTICS
Characteris:tic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
I
I
Symbol
9JC
9JA
I
I
I
Max
150
400
• Annular Semiconductor Patented by Motorola Inc.
I
I
I
Unit
°C/W
°C/W
STYLE 6'
PIN 1. CATHODE
2. GATE
3. ANODE
DIM
MILLIMETERS
MIN
MAX
INCHES
MAX
MIN
5.31
5.84
0.20S 0230
4.52 4.S5
0.178 o IS5
4.32 5.33
0.170 0.210
0.406 0.533 0.016 0.021
0.030
0.762
0.406 0.483 0.016 O.DIS
2.54
BSC
0.1008SC
G
H
0.914 1.17
0.036 0.046
J
0.711 1.22
0.028 0.048
K 12.70
10.500
L
6.35
0.250
45 0 BSC
45u 8SC
M
N
1.27 Bse
0.0508SC
P
1.27
- 0.050
A
B
e
0
E
F
-
-
-
All JEQEC notes and dimensions apply .
CASE 22-03
ITO-IS)
7-166
MCR201 thru MCR206
ELECTRICAL CHARACTERISTICS (RGK = 1000 Ohms)
Symbol
Min
Max
Unit
Peak Forward Blocking Current
(Rated VDRM@TC= 125°C)
IDRM
-
100
IlA
Peak Reverse Blocking Current
(Rated VRRM@ TC = 125°C)
IRRM
100
IlA
Peak On-State Voltage
(lTM = 1.2 A peak, ImS, Duty Cycle'; 1%)
VTM
-
1.7
Volts
-
200
350
IlA
-
0.8
1.2
Volts
Characteristic
Gate Trigger Current (Continuous de) (Note 1)
(Anode Voltage = 7.0Vde, RL = 100 Ohms)
TC - 25u C
TC = -65°C
IGT
Gate Trigger Voltage (Continuous de)
(Anode Voltage = 7.0 Vde, RL = 100 Ohms)
TC-250C.
TC'; -65°C
TC = 125°C
VGT
TC = 25°C
Holding Current
(Anode Voltage = 7.0 Vde,
15
IH
~
w
'"=>
~
105
~ ......
5
...........
.J~ ~~
-
~ 85
90·
~
~
-.. . . .
65
.......
12~"
..... 1'-..
lBO·
~ 45
,.=>
~~
25
I
I
,.,.
100
200
400
300
O. 7
'"
d. 5
a
/ /
/1
1.0
~
~
I
I
0
/'
500
~
I
0.2
1/
Ii
'"
~
~
0.6
0=
r--'
~ON-jC';;~~NGLJ
I
~~
"'<
w;::
>-
""z
=>1"""
~~
,,~
0:=
0.4
:s:~o 0.2
:;;
~
o~
o
/
60~
.~~
~/
90·
I I
30 0
V/ i j
/'
I I
0.03
""'-;;C
I
0.02
/. /h ~ / ' V
/: ~ ~ V
I
I
0.01
~r100
0.07
0.05
/ 1/ ' / / /
/ / / ~V
L
0.5
200
300
400
500
IT(AVI. AVERAGE ON·STATE CURRENT (mAl
7-167
I
I
""~ o. 1
120· lB~
II
I
~
FIGURE 2 - POWER DISSIPATION
25·C- I--
III
0.3
z
5l
z
0.8
/
I
o
~
--/ / '
f. I
w
IT(AVI. AVERAGE ON-STATE CURRENT (mAl
/
TJ = 125°C
2.0
r
x
""
mA
........-:
3.0
• =CONDUCTION ANGLE
f =60 Hz
j
I-
5.0
10
FIGURE 3 - FORWARD VOLTAGE
_1.1..-
'''\:i'..
60}
w
"'
-
-
5. 0
~
~~
15
0.1
not Included In measurement.
FIGURE 1 - CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
~ 125
-
_TC = -65°C
initiat!ng current = 20 mAl
1. RGK current
-
1.0
1.5
2.0
VTM,INSTANTANEOUS ON-STATE VOLTAGE (VOLTSI
2.5
MCR201 thru MCR206
FIGURE 4 - SURGE RATINGS
0:
'"5>-
I0
~ 7.0
0:
.
~
5.0
.,~
130
--
I
zw
.J\J\...
-I
-l-
;;;
1--1 CYCLE
'"we..>
"".... !!o-
TA' 25°C
~
:: 3.0
>
i~
9~
.... 0:
............
>=
~
>-
""
50
",,"
>-
2.0
1.0
3.0
5.0
7.0
10
20
30
50
30
70 100
"
" ,de
1\ \ I\"\.
\ ,\
\.1 BOo
0<=300
\60<\ ,
\ \ <0l\.
X
~ 1.0
-1.,1-
0<" CONDUCTION ANGLE
\' ~ I"
,\\'
"" ...
'"~
.!:-
90
=>""
""w
->-
""
~
~ i'..
"'~,
I\~
110
""w 70
i'
2. 0
.
FIGURE 5 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE I
o
80
160
"-
'"
240
400
320
IT(AV),AVERAGE ON-STATE CURRENT (mA)
NUMBER OF CYCLESAT60 H.
FIGURE 6 - THERMAL RESPONSE
>-
ffi
~
1.0
0.7
0.5
- -
~~ 0.3
I-'
wZ
~~ 0.2
w~
~w
~ ~ 0.1
~ ~ 0.01
. ,.,
No:
~ ~O.05
~
z
"'2
"JC(t) =,It "JC
0.03
0.02
-----
0.01
0.0001
0.0003 0.0005
0.001
0.003 0.005
0.01
0.03
0.05
t, TIME (SECONDS)
•
7-168
0.1
0.3
0.5
1.0
3.0
5.0
10
MCR201 thru MCR206
TYPICAL CHARACTERISTICS
FIGURE 7 - GATE TRIGGER VOLTAGE
FIGURE 8 - GATE TRIGGER CURRENT
10
0.8
en
!:;
0.7
~:::; 5.0
~
i"'-..
o
~
~
0.6
w
!;;:
.
,
~
~ 2.0
""'-
.....
0.5
'"
'"
~
~
"'-1"'-
0.4
a:
'"'"'
25
50
........ t-o..
ffi
~
75
0.5
.....
'"'"a:
....
0.3
-25
"'"
1.0
:>
't-".
-50
i"--.
....
~ 0.2
125
100
......
;;
........
150
~·O. 1
!E
-50
~5
0
~
~
H
100
125
TJ, JUNCTION TEMPERATURE (OC)
TJ. JUNCTION TEMPERATURE lOCI
FIGURE 9 - HOLDING CURRENT
3.0
ffi
RGK I'IKn
2.0
N
:::;
~
~
'"o
~ 1.0
I'--- r---
~
'"~
O.7
......
§'" O.5
......
o
x
£
-
O.3
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE laC)
125
150
•
7-169
MCR729-5
thru
MCR729-10
OA
SILICON CONTROLLED
REpl FIERS
5 AMPERES RMS
300-800 VOL TS
REVERSE BLOCKING TRIODE THYRISTOR
· ..
fast switching, high·voltage Silicon Controlled 'Rectifiers es·
peciallv designed for pulse modulator applications in radar and other
similar equipment.
High·Voltage: VORM = 300 to BOO Volts
• Turn·On
Times: 'in Nanosecond Range
• Repetitive Pulse Current to 100 Amps
• Stable
Switching Characteristics Over an Operating Temperature
•
Range From -65 to +105 C
• Pulse Repetition Rates as High as 10,000 pps
0
~
R
MAXIMUM RATINGS (T J = 105 0 e unless otherwise noted)
Symbol
Characteristic
Peak Repetitive Forward Blocking Voltage*(1)
VORM
,
MCR729·5
-6
·7
-8
·9
•
·10
Peak Repetitive Reverse Blocking Voltage III
Forward Current RMS
Average Forward Power
Peak Repetitive On-State Control
VRRM
ITIRMS)
PFIAV)
ITRM
N
Value
Unit
Volts
300
400
500
600
700
800
50
5
5
100
-,aL~
T
~I
I
\tA~NG
PLANE
Amps
Watts
Amps
Average Forward Gate Power
Peak Forward Gate Current
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque
PGFM
PGFIAV)
IGFM
VGFM
VGRM
TJ
T,tg
20
1
5
10
10
-65 to +105
-65 to +150
15
Watts
Watt
Amp,
Volt"
Volts
°c
°c
in/lb
·Characterized for unilateral applications where reverse blocking capability Is not important. Higher VROM ra~ed units available on request.
(1) Ratings apply for zero or negative gate voltages. Devices shall not have a positive bias
to the gate concunently with a negative potential on the anode. Devices should not be
tested with a constant current source for forward and reverse blocking voltages such that
the applied voltage exceeds the ratings.
o~
---.
t-rF1o
Volts
1011UNI2I1
IPW= 10",)
Peak Forward Gate Power
B
STYLE 1.
PIN 1. CATHODE
1, GATE
STUD - ANODE
DIM
8
C
E
F
G
H
J
K
N
P
Q
R
S
T
I
I
~ ~H
i~
~
~
I
- 51-
NOTE:
1. ALL RULES & NOTES
ASSOCIATED WITH
REFERENCED TO·64
OUTLINE SHALL APPLY,
MILLIMETERS
MIN
MAX
10,71 11.10
1,62 10,16
1.52 4.45
1,03 3,45
0,33
1.98
10.16 11.51
1),18 21.12
10.71
4,14 4,80
1.02 1.91
10,16
4,111 4.310
1.52
-
-
-
INCHES
MIN
MAX
0,424 0,431
0,300 0,400
0,060 0,1)5
0,080 0,136
0,013
0,018
0.4
0,45
0.100 0,855
0,424
0,163 0,189
0,040 0.015
0.400
0,1658 0,1691
0.060
CASE 63-03
7-170
K
-
-
MCR729-5 thru MCR729-10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak Forward Blocking Current
(Vo = Rated VORM, TC = 105°C, gate open)
Symbol
Min
Typ
Max
Unit
-
0.2
2
mA
IORM
Gate Trigger Current (Continuous de)
(VO = 7 Vde, RL = 100 ohms)
IGT
-
10
50
mAde
Gate Trigger Voltage (Continuous de)
(VO = 7 Vde, R L = 100 ohms)
VGT
-
0.8
1.5
Volts
IH
3
15
-
mA
Forward On Voltage
(/TM = SA, PW..; lmS, Duty Cycle"; 1%)
VTM
-
-
2.6
Volts
Dynamic forward On Voltage
vTM
-
15
25
Volts
Holding Current
(VO = 7 Vdc, gate open)
(0.5 jlS after 50% pt, IG = 200 mA, Vo = Rated
VORM, iF (pulse) = 30 Amps)
Turn-On Time hd + t r )
(/G = 200 mA, Vo = Rated VORM)
(iTM = 30 Amps peak)
(iTM = 100 Amps peak)
ns
ton
-
200
400
-
Turn-On Time Variation
(TC = +250 C to +1050 C and -6S o C to +2S o C,
iTM =30 A)
ton
-
!SOO
-
ns
Pulse Turn-Off Time
tree
-
15
-
jlS
dvldt
50
-
-
V/jls
°JC
-
-
4
°C/W
(iF(pul,e) ; 30 Amps, Ireverse = 0)
(I nductive charging circuit)
Forward Voltage Application Rate (Linear Rate of Rise)
(VO = Rated VORM, gate open, TC = IOSoC)
Thermal Resistance (Junction to Case)
7-171
MCR1718·5
thru
MCR1718·8
SILICON CONTROLLED
RECTIFIER
REVERSE BLOCKING TRIODE THYRISTOR
25 AMPERES RMS
300 thru 600 VOLTS
· .. fast switching, high·voltage thyristors especially designed for
pulse modulator applications.
• High-Voltage Capability from 300 to 600 Volts
• Repetitive Pulse Current to 1000 Amp
• Pulse Repetition as High as 4000 pps
• Current Application Rate as High as 1000 A/J!.s
MAXIMUM RATINGS
Value
Symbol
Rating
Peak Repetitive Forward or Reverse
Blocking Voltage *
MCR1718-5
Unit
Volts
VORM
VRRM
IT9
300
400
500
600
-6
-7
-8
B T
!
.
::!II
i--A~
Peak Reverse Blocking Voltage
(Transient) (Non-Recurrent 5 ms (max)
MCR1718-5
-6
-7
-8
•
Volts
VRSM
400
500
600
700
Forward Current RMS
Peak Forward Surge Current
IT(RMS)
25
Amp
ITSM
1000
Amp
dildt
1000
AIl's
12 t
250
A 2s
PF(AV)
30
Watts
PGM
20
Watts
(1-10 ~s Pulse Width)
Current Application Rate
(up to 1000 A peak)
UNF·2A
Circuit Fusing
(T J
=-65 to +1250 C; t
~ 1.0 ms
Dynamic Average Power
(TC
=65°C)
Peak Gate Power - Forward
Average Gate Power - Forward
PG(AV)
Peak Gate Current - Forward
IGM
Peak Gate Voltage
VGM
Operating Junction Temperature Range
TJ
T stg
Storage Temperature Range
,
,
Stud Torque
STYLE "
PIN 1. CATHODE
2. GATE
3. ANODE
1.0
Watt
5.0
Amp
10
Volts
-65 to +125
°c
B
-65 to +150
°c
3Q
in.-Ib
C
F
H
J
K
L
·VORM and VRRM for all types can be applied on a continuous de basis
without incurring damage.
Ratings apply for zero or negative gate voltage.
DIM
A
n
R
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
T
I
Symbol
A8JC
I
Max
I
2.0
Unit
°CIW
7-172
MILLIMETERS
MIN
MAX
15.J4 15.60
14.00 14.20
26.67 30.23
3.43 4.06
2.29 REF
10.67 11.56
15.75 17.02
7.62 8.••
1.40 2.16
1.65 REF
12.73 12.83
INCHES
MIN
MAX
0.614
0.559
1.190
0.160
REF
0.455
0.670
0.•50
u.uoo 0.085
0.065 REF
0.501 0.505
0.604
0.551
1.050
0.135
0.090
0.420
0.620
0.300
CASE 263-03
MCR171S-5 thru MCR171S-S
ELECTRICAL CHARACTERISTICS (TC = 2So C unless otherwise noted)
Symbol
Characteristic
Peak Forward Blocking Current
(Vo
= Rated VORM with gate open, TJ = 12So C)
Peak Reverse Blocking Current
(VO
IRRM
= Rated VRRM with gate open, TJ = 12So C)
Forward "On" Voltage
(lTM = 2S Adc)
VTM
Dynamic Forward On Voltage
vTM
(lGT = SOO mA, Ipulse = SOO Amps)
(1.0 I'S after start (10% pt.) of Ipul se )
(S.O I'S after st~rt (10% pt.) of Ipul se )
Gate Trigger Current {Continuous del
(VO
VGO
IH
= 7.0 Vdc, Gate Open)
= 7.0 Vdc, Gate Open, TJ = 12SoC)
-
-
8.0
-
-
8.0
-
1.1
1.3
-
30
5.0
-
-
10
SO
0.25
0.8
-
I.S
5.0
15
6.0
-
mA
Volts
mA
Volts
mA
I'S
tq
= 500 A, IR = 10 A, dv/dt = 20 VII's Vo = Rated VORM,
VR = Rated VRRM)
Units
mA
-
Circuit Commutated Turn·Off Time
(IF
Max
VGT
= 7 Vdc, RL = SO Ohms)
= Rated VORM, R L = 50 Ohms, T J = 125°C)
Holding Current
(VO
(VO
Typ
IGT
= 7Vdc, RL = 5010hms)
Gate Trigger Voltage (Continuous de)
(Vo
(Vo
Min
10RM
-
20
-
-
,100
-
(Conductive Charging Circuit - Circuit dependent)
Critical Exponential Rate of Rise
(Gate Open, T J
dv/dt
= 12SoC, Vo = Rated VORM)
VII's
11lVORM for all types can be supplied on a continuous de basis without incurring damage.
Ratings apply for zero or negative gate voltage.
•
7-173
MCR1906-1
thru
MCR1906-6
G
A
o>---_~~~----- 1/16" From Case, 10 s max.1
MILLIMETERS
MIN MAX
889 9'0
800 851
610 660
0406 0533
0229 318
0406
0.483
483
533
0111
0131
1270
0864
102
635
450 NOM
1.27
90 0 NOM
25'
INCHES
MIN
MAX
0350 0310
0315 0335
0240 0260
0016 0021
0009 0125
0016 0019
0190 0210
0028 0034
0029 0040
0500
0250
45 0 NOM
0050
90 0 NOM
DIDO
All JEDEC dimenSions and nOlesapply
CASE 79-02
TO·39
7-174
MCR1906-1 thru MCR1906-6
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
MJ13335
MJ13334
MJ13333
MJ13332
Collector-Emitter Sustaining Voltage (Table 1)
(lC
= 100 mA,
IB
= 0)
Collector Cutoff Current
(VCEV
(VCEV
VCEO(sus)
500
450
400
350
-
-
-
-
-
mAde
ICEV
= Rated Value, VBE(off) = 1.5 Vdc)
= Rated Value, VBE(oll) = 1.5 Vdc, TC = 150o C)
Collector Cutoff Current
(VCE = Rated VCEV, RBE
ICER
Vdc
-
0.25
5.0
5.0
mAde
1.0
mAde
= 50 n, TC = 100o C)
Em iner Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
lEBO
. SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
See Figure 12
Clamped Inductive SOA with Base Reverse Biased
See Figure 13
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE
hFE
= 5.0
Collector-Emitter Saturation Voltage
(lC
(lC
!lc
= 10 Adc,
= 20 Adc,
= 10 Adc,
IB
IB
IB
= 10 Adc,
= 10 Adc,
IB
IB
60
= 2.0 Adc)
= 2.0 Ade, TC = 100o C)
Vdc
VCE(sat)
-
= 2.0 Ade)
= 6.7 Ade)
= 2.0 Ade, Tc = 100oC)
Base-Emitter Saturation Voltage
!lc
(IC
10
Vdc)
-
1.8
5.0
2.4
Vde
VBE(sat)
-
-
1.8
1.8
td
-
0.02
0.1
~s
tr
-
0.3
0.7
~s
""
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
= 0, I test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
(VCC = 250 Vdc, IC = 10 A,
IBl = 2.0 A, VBE(off) = 5.0 Vde, tp
Duty Cycle .. 2.0%)
= 10 ~s,
Fall Time
ts
1.6
4.0
~s
tl
O.~
0.7
~s
2.5
5.0
~s
0.8
2.0
~s
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
Fall Time
(lC - 10 A(pk), Vcl amp - 250 Vde, IBl - 2.0 A,
VBE(off) = 5 Vdc, TC = 100o C)
,
(lC = 10 A(pk), Vel amp = 250 Vde, IBl
VBE(oll) = 5 Vde, TC = 25 0 C)
= 2.0 A,
tsv
te
tsv
1.8
te
0.4
tfi
(1) Pulse Test: PW· 300 ~s, Duty Cycle .. 2%.
7-175
-
-
0.2
~s
~s
-
~s
MCR3818 -1 thru MCR3818 -10
MCR3918 -1 thru MCR3918 -10
SI LICON CONTROLLED
RECTIFIER
AO
REVERSE BLOCKING TRIODE THYRISTOa
20 AMPERES RMS
25-800 VOLTS
· .. designed for industrial and consumer applications such as power
supplies; battery chargers, temperature, motor, light and welder
controls.
• Supplied in Either Pressfit or Stud Package
•
High Surge Current Rating - ITSM = 240 Amp
•
Low On-State Voltage.:. 1.2 V (Typ)
@
ITM = 20 Amp
• Practical Level Triggering and Holding Characteristics 40 mA (Max) and 50 mA (Max) @ TC = 25 0 C
MAXIMUM RATINGS
Rating
Symbol
Value
VORM
·or
VRRM
25
50
100
200
300
400
500
600
700
800
Unit
Peak Repetitive Forward and Reverse Voltage (1)
MCR3818, MCR3918-1
'-2
-3
-4
·5
-6
-7
·8
-9
·10
Non8Repetitive Reverse Blocking Voltage
MCR3818, MCR3918 - 1
-2
-3
Volts
35
75
150
300
400
500
600
700
800
900
-5
·6
·7
-8
-9
-10
On-State Current R MS
Average On-State Cu~rent
STYLE 1
TERM I (jATf
2 CATHODE
3 ANODE
MCR3818
SERIES
VRSM
-4
I
Volts
CASE 174·03
ITIRMSI
20
Amp
'ITIAVI
13
Amp
ITC = 67°C I
Circuit Fusing
IT J = -40 to +1 OOoC, t "" 8.3 msl
Peak Non-Repetitive Surge Current
lOne cycle, 60 Hz, T J = -40 to +1000 CI
Pea k Gate Power
IMaximum Pulse Width = 10 /lsi
Average Gate Power
Peak Forward Gate Current
IMaximum Pulse Width
I
l-
E
1.0
-60
0.3
-40
-10
010406080
TJ, JUNGTION TEMPERATURE lOG)
100
110
140
7-177
-60
-40
-10
10
40
60
80
100
TJ, JUNGTION TEMPERATURE lOCI
110
140
MCR3818/3918 series
MAXIMUM ALLOWABLE NON-REPETITIVE SURGE CURRENT
FIGURE 3 - 60 Hz SURGES
24
o
22 0
1"'-
.
FIGURE 4 - SUB-CYCLE SURGES
500
T~
"
0
0
I Pi.OR
sJRGIE I I
SCR OPERATED AT
RATED LOAD CONDITIONS
TJ = _40DC to +100DC
f = 60 MHz
'r--
0'"
0
"'" f' r--..
0
0
0
V '\
f-l
""'"
~f'
12t = 235 A2,
f'r-0
L-1J.J
0
l"f'
II
CYCLE-j
BO
o
:=:
1.0
2.0
4.0
6.0 B.O 10
20
40
60
10 0
1.0
BO 100
1.5
2.0
FIGURE 5 - GATE TRIGGER
CHARACTERISTICS
2.0
-
>-
FI
~; g
i= SI
0:
GATE VOLTAGE
REQUIRED TRIGGER @TJ= 25°C
!
w
l-
«
'"
9o
":~ 3.0
2.0
-60
40 mA GATE CURRENT REQUIRED
TO TRIGGER ALL UNITS@TJ=25 DC
0.02
rr-=
MAXIMUM ALLOWABLE FORWARD
GATE VOLTAGE VGM = 10 VOLTS
0.000101t'1-,---,---r,
0.2
1.0
=---'l
-"T,--,F-r,-,,---r-lI,---j
2.0
I'--
~ 5. 0
\
0.03
......
:>
'"
I ALL UNITS WILL TRIGGER AT ANY VOLTAGE
AND CURRENT WITHIN THIS AREA
I
{TC = 25 DC. VAK = 7.0 Vi
L _________
z
r--......
~ 7.0
RECOMMENDED TRIGGER
CURRENT
:>~
0
10
~ V~
il'i
~~err-
I
r------..
I-
~u
~~71
'"
I-
10
OJF-STAJE VOJAGE =
...J:r~
5
7.0
0
!;(~GI
~
....
5.0
FIGURE 6 - EFFECT OF TEMPERATURE ON
TYPICAL HOLDING CURRENT
MAXIMUM ALLOWABLE FORWARD
GATE CURRENT
««
z~
3.0
PULSE WIOTH (m,)
NUMBER OF CYCLES
3.0
4.0
5.0
6.0
7.0
B.O
9.0
10
VG. GATE VOLTAGE (VOLTS)
7-178
-40
-20
20
40
60
BO
TJ. JUNCTION TEMPERATURE (DC)
100
120
140
MCR3818/3918 series
DERATING AND DISSIPATION FOR RESISTIVE AND INDUCTIVE
LOADS (f = 60 to 400 Hz, SINE WAVE)
FIGURE 7 - AVERAGE CURRENT DERATING
FIGURE 8 - ON-5TATE POWER DISSIPATIOi>.l
~
~
4
r
w
~
180'
0
o
6
~
2
'"~
0
60'
I
701--+--+-~4--+-+-~.-~-~~~1--4
•
~
o~
2.0
4.0'
60
8.0
10
12
14
16
18
o
20
(l
InAV). AVERAGE ON·STATE CURRENT (AMP)
-
~
CONDUCTION ANGLE -
I I I I
4.0
20
-
---1o~
A~
0
U
r-
/,/-V
0-3//- ~ ~
::;;
«
::;;
/~
90'
15
:: 80 I--+--\----l'.:-'....r~+-"'od_
//
60
8.0
10
12
14
16
18
20
InAV). AVERAGE ON·STATE CURRENT (AMP)
FIGURE 9 - ON-5TATE CHARACTERISTICS
_
25 0
~ 20 0
:>
"""'"
~ 10 0
~ 70
~ 50
TYPII~AL
30
S 20
"I
z
;:z
~
MAXIMUM
TJ
TJ
I
3. 0
2. 0
~
lOO'C
25'C
I
:E
.~
,,/'
.'l
//
//
~ 10
~ 7. 0
z 5.0
- r--
I--"
II I
1. 0
025
I
I
I
1.0
0.5
1.5
2.5
2.0
3.0
3.5
3.75
VT.INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)
FIGURE 10 - TYPICAL THERMAL
RESISTANCE OF PLATES
FIGURE 11 - MOUNTING DETAILS FOR
PRESSFIT THYRISTORS
400r-----r_~r-----r---r_-.--r_._r_ro
i
200
~
I---+---l-"~,,'-I---+--I--++++-l
.-L:505 Oi•. -F==!/ Heat Sink
~
~
'"'
{:}
40
~~
~~
«
600- 900
20
-
~c
'>
10
$.
tt:
30
r-a=300
1/ /
/
/'
1=
I//V./'/""
/- ~ ~
b@ f:::/
~~
o
o
4.0
InAV). AVERAGE FORWARD GURRENT (AMP)
FIGURE 3 - TYPICAL GATE TRIGGER CURRENT
'"
'"'"
"'
«
0;~
16
W
«
'"
,
20
24
28
32
36
40
OFF·STATE VOLTAGE =
'"
'"'"
W
----....
'I"---..
--........
'" 3.0
E'
W
001
'"
0.4
1-"
--........
--........
I"--..
0.6
"'
:;:
I--
V
.............
0.8
':;
0.7
0
>
..........
5.0
0.9
o
2:
I'----..
W
I-w
I--
12
FIGURE 4 - TYPICAL GATE TRIGGER VOLTAGE
OFF·STATE VOLTAGE. 7V
.§
~
a 7.0
8.0
1.0
:<
10
a = GONDUCTION ANGLE
InAV), AVERAGE FORWARD CURRENT (AMP)
20
I--
V
V.
/. /
30
w~
"'I--
,",W
50
180 0
"-z
60
:§f5
xl--
V
40
~~
~!2...
;:w
0'"
de
'"
1"-...
.........
>'"
2.0
-60
-40
-20
20
40
60
80
100
TJ,JUNGT10N TEMPERATURE 10GI .
120
140
7-181
0.3
-60
-40
-20
20
40
60
80
100
TJ. JUNCTION TEMPERATURE (OCI
120
140
MOC3010
MOC3011
OPTICALLY ISOLATED TRIAC DRIVER
These devices consist of a gallium-arsenide infrared emitting diode,
optically coupled to a silicon bilateral switch and are designed for
applications requiring isolated triac triggering, low-current isolated
ac switching, high electrical isolation (to 7500 V peak).·high detector
standoff voltage, small size, and low cost .
OPTICALL V ISOLATED
TRIAC DRIVER
• UL Recognized File Number 54915
MAXIMUM RATINGS (TA = 260C unle.. otherwise notedl
I
Rating
Svmbol
INFRARED EMITTING DIODE MAXIMUM RATINGS
V.lue
Unit
Reversa.Voltage
VR
3.0
Volts
Forward Current - Continuous
IF
50
mA
Total Power Qissipation@ T A = 2SoC
Po
100
mW
1.33
mW/oC
r
Negligible Power in Transistor
Derate above 25°C
OUTPUT DRIVER MAXIMUM RATINGS
OlloState Output Terminal Voltage
OnoState RMS Current
(Full Cvcle, 50 to 60 HzI
TA = 25°C
TA = 70°C
Peak Nonrepetitive Surge Current
VORM
250
Volts
IT(RMSI
100
50
mA
rnA
ITSM
1.2
A
Po
300
4.0
rnW
mW/oC
7500
Vac
Po
330
4.4
mW
mW/oC
°c
(PW= 10ms,OC= 10%)
Total Power Dissipation @ TA :: 25°C
Derate above 250 e
TOTAL DEVICE MAXIMUM RATINGS
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz,
• VISO
5 Second Duration)
•
Total Power Dissipation @ T A =- 2SoC
Derate above 250C
Junction Temperature \Range
Ambient Operating Temperature Range
Storage Temperature Range
Soldering Temperature (1051
(1) Isolation surge voltage,
Anode 1 ,-
Visa. is an
~---
TJ
"40 to +100
TA
T stg
-40 to +70
°c
-40 to +150
°c
-
260
°c
internal device dielectric breakdown rating.
r---L~ 6 Main Terminal
NOTES:
1. LEADS WITHIN 0.25 mm (0.0101
DIAMETER OF TRUE POSITION
AT SEATING PLANE AT
MAXIMUM MATERIAL
CONDITION.
2. DIMENSION "L" TO CENTER OF
LEADS WHEN FORMED PARALLEl.
OIM
A
a
C
0
Cathode 2 ,,------'
5 Triac Driver Substrate
DO NOT Connect
F
G
H
J
K
L
3
4 Main Terminal
M
N
p
R
MilliMETERS
MAX'
MIN
B.13
B.B9
1.27
2.03
5.0B
2.92
0.41
0.51
1.02
1.7B
2.54
BSC
1.02
2.16
0.20
0.30
3.81
2.54
7.62
ase
00
150
0.38
2.54
0.61
0.97
6.10
6.60
INCHES
MIN
MAX
0.320 0.350
0.050 O.OBO
0.115 0.200
0.016 0.020
0.D40 0.070
0.100 BSC
0.040 0.OB5
-0.008 0.012
0.100 0.150
0.300 OSC
00
150
0.015 0.100
0.032 0.038
0.240 0.260
CASE 730
7-182
MOC3010, MOC3011
ELECTRICAL CHARACTERISTICS (TA
= 250 C ~nless otherwise noted I
I Symbol
Min
TVp
Max
Unit
IA
-
0.05
100
!"A
VF
-
1.2
1.5
Volts
lOAM
-
10
100
nA
VTM
-
2.5
3.0'
Volts
Critical Rate of Rise of Off-5tate Voltage. Figure 3
dv/dt
-
2.0
dv/dt
-
0.15
-
VI!"s
Critical Rate of Rise of Commutation Voltage, Figure 3 .
-
8.0
5.0
15
10
-
100
-
Characteristic
LED CHARACTERISTICS
Reverse Leakage Current
(VA
=3.0VI
Forward Voltage
(IF = 10 mAl
DETECTOR CHARACTERISTICS (IF = 0 unless otherwise noted I
Peak Blocking Current, Either Direction
(Aated VOAM. Note 11
Peak
On~State
(lTM
Voltage, Either Direction
= 100 rnA Peakl
VI!"s
(I load = 15 mAl
COUPLED CHARACTERISTICS
LEO Trigger Current, Current Required to Latch Output
rnA
1FT
(Main Terminal Voltage = 3.0 VI
MOC3010
MOC3011
Holding Current, Either Direction
IH
!"A
Note 1. Test voltage must be applied within dv/dt rating.
2. Additional information on the use of the MOC3010/3011
is available in Application Note AN·780.
TYPICAL ELECTRICAL CHARACTERISTICS
TA=250 C
FIGURE 1 - ON-5TATE CHARACTERISTICS
+800
f- oltput
L.. IWidt~
= 801
",
IF=20mA
C
.E +400 f- f = 60 Hz
....
/
V
'"'"
a
1.5
~
1.3
/
. Til = 250 C
ill
V
FIGURE 2 - TRIGGER CURRENT vorlul TEMPERATURE
r-
....
~1. 1
/
ffi
N
:::;
w
~
/
t;;
z
o
.. ·400
.t-
. . . .V
~
'"~
D.9
o
/
z
-- -..
r-
r--- . . . .
0.7
i'"""-- r--...
,./
-800
-14 -12 -10 -8.0 -6.0 -4.0 -2.0
0
2.0 4.0 6.0
8.0
10
12
0.5
-40
14
-20
20
40
60
TA. AMBIENT TEMPERATURE (OCI
VTM. ON-5TATE VOLTAGE (VOLTSI
7-183
80
100
•
MOC3010, MOC3011
FIGURE 4 - dv/dt versus LOAD RESISTANCE
FIGURE 3 - dv/dt TEST CIRCUIT
6
2
0.24
2.4
Sialic
MOC3010
MOC3011
0.20
2.0
4
-;
-'!
_ Vin=30VRMS
>
;:; 1.6 Test Circuit in Figure 3
~
n n n n+
Commutating ..."",.
SV
/
O.B
JUUU~
I Commutatlng
I Static I
t-- dv/dt ~dv/dt~
0.4
1.2
O.B
RL. LOAD RESISTANCE (kll)
..........
RL = 2
t;
J
'i O.B
.... I-l-
RL.- 510 II
0.4
I
25
~
30
40
dv/d' = 8.9 Vin I
RI =1 kll
0
..
r--.
.....: ..
--- - -
:I""- ' -
10
0
.~
0.04
o
I I
·0
Test Circuit in Figure 3
0
.......
~ 1.2
50
BO
70
60
90
1.\
110
10
100
FIGURE 7 - MAXIMUM NONREPETITIVE SURGE CURRENT
3.0
_
t!J5WI
IF=20mA
":$>ffi
~
... 2.0
:::>
w
to
a:
-
iil
'"
~
H
-
I--
1.0
'"
E
o
0.01
IDe
I. MAXIMUM OPERATING FREQUENCY (Hz)
TA. AMBIENT TEMPERATURE (OC)
i1!
~
...
2.0
000
0.20
Circuit in Figure 3
... ... ;;",.
ill -
1.6
: dv/d,· 0.15 V/••
Commutating dv/dt
.........
E
.,Z
0.08
Staticdv/dt
1.6
0.12
FIGURE 6 - COMMUTATING dv/dt versus FREQUENCY
0.24
2.0
~
0.04
o
FIGURE 6 - dv/dt versus TEMPERATURE
•
~
0.4
24
...
----
I---
g
~
.c:
/'
dv/dt - B.9 f Vln
~
,....
I
~1.2
-
~
0.16
0.1
1.0
pw. PULSE WIDTH (m.)
7-184
10
100
MOC3010, MOC3011
FIGURE 8 - LAMP DRIVER APPLICATION
5W
VCC
o-_~R;i~nV-.o.~I--_~6~____J.,.J
120 Vac
4
FIGURE 9 - RESISTIVE LOAD
6
390
n
120 V
60 Hz
MOC3010
MOC3011
4
•
FIGURE 10 - INDUCTIVE LOAD.
6
lao n
.220
n
120 V
60 Hz
MOC3010
Cl
MOC3011
R
4
C2
R. C1, C2 Values Depend upon Load Condition.
7-185
MPU131
MPU132
MPU133
PROGRAMMABLE UNIJUNCTION
TRANSISTORS
SILICON PROGRAMMABLE
UNIJUNCTION TRANSISTORS
designed to enable the engineer to "program" unijunction
characteristics such as RBB, 11, lV, and Ip by merely selecting two
resistor values. Application includes thyristor-trigger, oscillator, pulse
and timing circuits. The MPU131, MPU132 and MPU133 may also
be used in special thyristor applications due to the availability of an
anode gate. Supplied in an inexpensive T0-92 plastic package for
high-volume requirements, this package is readily adaptable for use in
automatic insertion equipment.
• Programmable - RBB,11, IV and Ip.
A
•
Low On-State Voltage - 1.5 Volts Maximum@ 'F'; 50 mA
•
Low Gate to Anode Leakage Current - 5.0 nA Maximum
MB
•
A
SEATINGP~t---'
~
~
• High Peak Output Voitage - 11 Volts Typical
Low Offset Voltage - 0.35 Volt Typical (RG = 10 k ohms)
PLANE F
. ---.l
II
Rating
Power Dissipation
Derate Above 25°C
DC Forward Anode Current
Symbol
Value
Unit
PF
1/9JA
375
5.0
mW
mW/oC
IT
200
2.67
mA/oC
±20
mA
1.0
2.0
Amp
Amp
Derate Above 250 C
DC Gate Current
Repetitive Peak Forward Current
IG
~7
rnA
ITSM
Amp
5.0
10 itS Pulse Width
DIM
A
B
C
D
Gate to Cathode Forward Voltage
VGKF
40
Volt
VGKR
5.0
Volt
G
H
Gate to Anode Reverse Voltage
VGAR
40
Volt
J
Anode to Cathode Voltage (1)
VAK
±40
Volt
TJ
-50 to +100
°c
°c
Storage Temperature Range
Tstg
-65 to +150
SECT. A·A
c
f
STYLE 10'
PIN 1. CATHODE
2. GATE
3 ANODE
Gate to Cathode Reverse Voltage
Operating Junction Temperature Range
~
ItR
.I.TRM
100 ItS Pulse Width. 1.0% Duty Cycle
20 ItS Pulse Width, 1.0% Duty Cycle
Non-Repetitive Peak Forward Current
I
Dj?-~
MAXIMUM RATINGS
K
F
K
L
N
P
R
S
MILLIMETERS
MIN
MAX
4.32
4.44
3.18
0.41
0.41
1.14
-
2.41
12.70
6.35
2.03
2.92
3.43
0.36
5.33
5.21
4.19
0.56
0.48
1.40
2.54
2.67
2.92
-
INCHES
MIN
MAX
0.170
0.175
0.125
0.016
0.016
0.045
0.095
0.500
0.25
0.080
0.115
~
0.41 J!Jl!4
0.210
0.205
0.165
0.022
0.019
0.055
0.100
0.105
0.115
-
QJ!J
All JEDEC dimensions and notesapplV.
CASE 29-02
(1) Anode positive, AGK "'" 1k ohm
Anode negative, RG K .... open
7-186
MPU131, MPU132, MPU133
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Figure
Symbol
Min
Typ
Max
Unit
MPU131
MPLJ132
MPU133
MPU131
MPU132
MPU133
2,9-14
Ip
-
1.25
0.19
0.08
4.0
1.20
0.70
2.0
0.30
0.15
5.0
2.0
1.0
"A
MPU131
MPU132
MPU133
1
VT
0.2
0.2
0.2
0.2
0.70
0.50
0.40
0.35
1.6
0.6
0.6
0.6
Volts
1.4,5,
IV
-
50
25
70
50
18
18
270
270
-
1.0
30
5.0
75
-
5.0
50
nAdc
Characteristic
Peak Current
(VS
= 10 Vdc,
(VS
= 10 Vdc, RG = 10 k ohms)
RG
= 1.0 Mfl)
Offset Voltage
(VS = 10 Vdc, RG = 1.0 Mn)
(VS
= 10 Vdc,
RG
Valley Current
IVS = 10 Vdc, RG
IVS = 10 Vdc, RG
= 10 k ohms)
.-
-
-
IAII Types)
= 1.0 Mfl)
MPU131,132
MPU133
MPU131
MPU132,133
= 10 k ohms)
"A
"
Gate to Anode Leakage Current
IGAO
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)
Gate to Cathode Leakage Current
IVS = 40 Vdc, Anode to Cathode Shorted)
Forward Voltage (IF
IGKS
=50 mA Peak)
Peak Output Voltage
(Va =20 Vdc, Cc = 0.2 "F)
Pulse Voltage Rise Time
nAdc
1,6
VF
-
O.B
1.5
Volts
3,7
Vo
6.0
11
-
Volts
3
tr
-
40
80
ns
IVa ='20 Vdc, Cc = 0.2 "F)
FIGURE 1 - ELECTRICAL CHARACTERIZATION
A
R2
G
-Vs '" Rt1'1 R2 V S
Al
K
lA - Programmable Unljunctlon
with "Program" Resistors
R1 and R2
1 B -- Equivalent Test Circuit for
Figure 1A used for electrical
Ie -
Electrical Characteristics
charactoristics testing
(also see Figure 2)
FIGURE 3 - VoAND tr TEST CIRCUIT
FIGURE 2 - PEAK CURRENT (lp) TEST CIRCUIT
+V
510 k
16 k
Vo
6V
A
RG "- R/'2
Vs ~ VS/2
(See Figure 1)
Cc
27.k
Scope
20 !!
Put
20
Under
Test
7-187
0.6 V ~=~-I-_ _ _ _ _ _ _...
·MPU131, MPU132, MPU133
TYPICAL VALLEY CURRENT BEHAVIOR
FIGURE 5 - EFFECT OF TEMPERATURE
FIGURE 4 - EFFECT OF SUPPLY VOLTAGE
1000
I--- TA ' 25'C
50o f=:{SEE FIGURE 11
i
§
RG,lOkH=
300
10 0
'-'
«
>
~
0
?-
0
-
500
200
.:....
~
100
=>
'-'
'"
50
'"
-
0
I0"'-50
>
20
?
5.0
2:
2.0
0
w
==
10
{SEE FIGURE 11
1.0Mn_
15
10
5.0
-50
20
-15
TA
o
2:
1.0
'"
o
0.2
~
0.1
'"
0.05
~
20
L
~
....
~
5o
0.01
0.01
15
. . . .V
>
'"~
oj
u:
> 0.01
II
Cc =0.2"F
TA'15'C
g r-- {SEE FIGURE 31
25'C
w
«
0.02
0.05
0.1
0.2
0.5
1.0
2.0
50
/"
./
o /'
5.0
o
5.0
../
..............
~
10
-- -
15
10
15
VS. SUPPLY VOLTAGE {VOLTSI
STANDARD UNIJUNCTION
Bl
'~-r
r----~-+
R2
P'
N
.
R1
RSS" R1 + R2
Rl
n- R1
-+ R2
Bl
Equivalent Circuit
Circuit Sytnbol
Typical Application
PROGRAMMABLE UNIJUNCTION
A
CfT"
K
E
t1"
R
p
N
p
N
G
2 RBB - Rl + R2
Rl
n-RT+R2
Rl
K
.
CC.
Bl
Circuit Symbol
Equivalent Circuit
with External "Program"
Resistors R1 and R2
7-188
~
,..-
FIGURE 8 - STANDARO UNIJUNCTION
COMPARED TO PROGRAMMABLE UNIJUNCTIO~I
B2
/"
,/
10
IF. PEAK FORWARD CURRENT (AMP)
'~
+100
FIGURE 7 - PEAK OUTPUT VOLTAGE
0.5
1;;
+15
15
0
~
+50
+25
TA. AMBIENT TEMPERATURE {'CI
'"«
>
~
r- ....... _........:1.0M U 1
I-- VS'10VOLTS
FIGURE 6 - FORWARD VOLTAGE
~
-100 kU
VS.SUPPLY VOLTAGE {VOLTSI
10
RG '10 kn
..........
~
.«
-
....... r-
Typical Application
30
35
40
MPU131, MPU132, MPU133
TYPICAL PEAK CURRENT BEHAVIOR
MPU131
FIGURE 9 - EFFECT OF SUPPLY VOLTAGE ANO RG
FIGURE 10 - EFFECT OF TEMPERATURE AND RG
100
10
50
5.0
1....
~
=
a
'"
~
If
3.0
2.0
1.0
~
~
r---.RG
0.5
1DkU
100kU
1.0MU
0.3
0.2
20
...........
10
........ .........
Vs I1DVOLTS
(SEE FIGURE 2)
.........
~
5.0
a
:to::
2.0
~
1.0 i===RG -1DkU
TA: 25°C
(SEE FIGURE 2)
100kn
O. 5
5.0
I
I
10
15
O. 1
-50
20
.........
1.0MU
0.2
0.1
-..
.......
........
+50
+25
-25
VS. SUPPLY VOLTAGE (VOLTS)
+15
+100
TA.AMBIENTTEMPERATURE (OC)
MPU132
FIGURE 11 - EFFECT OF SUPPLY VOLTAGE AND RG
FIGURE 12 - EFFECT OF TEMPERATURE AND RG
10
30
20
5.0
"'
10
TA - 25°C
(SEE FIGURE 2)
0
-
"'
0
0
_RG=10kU
Vs: 10 VOLT~.~
(SEE FIGURE 2)=
5
-RG:1DkU
2
100kU
10
15
20
.........
.........
.........
.........
1.0MU
0.05
0.03
-50
1.0MU
"'
100kU '"
O. 1
0.2
O. 1
5.0
"'-...
........
+25
-25
+50
+15
+100
TA. AMBIENT TEMPERATURE (OC)
Vs. SUPPLY VOLTAGE (VOLTS)
MPU133
FIGURE 13 - EFFECT OF SUPPLY VOLTAGE AND RG
:<
10
0.1
0.5
50
3
0.3
~
0.2
....
a=
FIGURE 14 - EFFECT OF TEMPERATURE AND RG
1.0
RG = 10kU
:<
100kU
3
i
'I-
......
0.1
0.01
0.05
If
'"
~
!Io::
:'.5
10
~
"'
0.5
0.2 -R.E-1DkU ...........
15
.........
./""'....
.........
100-Gl
1.0~n
.........
0.02
0.01
5.0
1.0
VS-1DVOLTS
(SEE FIGURE 2)
...........
0.05
TA 25°C
(SEE FIGURE 2) f - - ; -
0.02
\."'-
~ O. 1
1.0MU
0.03
2.0
20
0.0 1
-50
-25
+25
+50
TA. AMBIENT TEMPERATURE (OC)
VS. SUPPLY VOLTAGE (VOLTS)
7-189
-
.........
+15
+100
•
MPU6027
MPU6028
PROGRAMMABLE UNIJUNCTION
TRANSISTORS
SILICON PROGRAMMABLE
UNIJUNCTION TRANSISTORS
· .. designed to enable the engineer to "program" unijunction characteristics such as RBB.ll. IV. and Ip by merely selecting two resistor
values. Application includes thyristor·trigger. oscillator. pulse and
timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high·volume requirements. this
package is readily adaptable for use in automatic insertion equipment.
K
•
Programmable - RBB. 11. IV and Ip.
•
Low On·State Voltage - 1 5 Volts Maximum@ IF = 50 mA
•
•
•
High Peak Output Voltage - 11 Volts Typical
Low Gate to Anode Leakage Current - 10 nA Maximum
Low Offset Voltage - 0.35 Volt Typical (RG
'i~'
__J
~
= 10k ohms)
SEATING
PLANE F
'L
. _.1
O-jti._G
~
JI-=
rt
MAXIMUM RATINGS
Rating
Power DI5slpation(1)
Derate Above 2SDC
DC Forward Anode Current(2)
Symbol
PF
l/tiJA
375
5.0
mW
mW/oC
'T
200
2.67
mA
mA/oC
'G
±50
mA
1.0
2.0
Amp
Amp
50
Amp
Derate Above 25°C
DC Gate Current
Repetitive Peak Forward Current
'TRM
100"s Pulse W,dth. 1.0% Duty Cycle
20", Pulse W,dth. 1.0% Duty Cycle
Non-Repetitive Peak Forward"Cutrent
10 ~s Pulse WIdth
'TSM
Gate to Cathode Forward Voltage
VGKF
40
Volt
Gate to Cathode Reverse Voltage
VGKR
-5.0
Volt
Gate to Anode Reverse Voltage (1)
VGAR
40
Volt
VAK
J-40
Volt.
TJ
-50 to +100
°c
°c
Anode to Cathode Voltage
Operating Junction Temperilture Range
Storage Temperature Range
T stg
-55 to +150
(1) Anode positive, RG K = 1 k. ohm
Anode negative, RGK z::I open
SECT. A·A
R ,
~d
Unit
Value
'
C
N
2,;!
N
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
MILLIMETERS
MIN MAX
4.32
5.33
B
4.44
5.11
C
3.18
4.19
D
0.41
0.56
F
0.48
0.41
G
1.14
1.40
H
2.54
J
2.41
2.61
K 17.10
L
6.35
N
2.03
2.92
P
2.92
R
3.43
S
0.41
0.36
DIM
A
-
-
niCHES
MIN MAX
0.170 0.210
0.175 0.205
0.115 0.165
0.016 0.021
0.016 0.019
0.045 0.055
- 0.100
0.095 0.105
0.500
0.250
0.080 0.115
0.115
-
I
O. 14
0.016
All JEDEC dimensiansand notes apply.
CASE 29-02
TO-92
7-190
K
MPU6027, MPU6028
ELECTRICAL CHARACTERISTICS (T A = 2SoC unless otherwise noted)
Characteristic
Peak Current
Figure
Symbol
2.9.11
Ip.
Min
Typ
Max
1.25
0.08
2.0
0.15
-
4.0
0.70
5.0
1.0
IVs = 10 Vdc. RG = 1 0 M!!I
MPU6027
MPU6028
-
!VS = 10 Vdc. RG = 10 k ohms)
MPU6027
MPU6028
-
Offset Voltage
IVS = 10 Vdc. RG
(VS
= 10 Vdc.
RG
-
1
MPU6027
MPU6028
0.2
0.2
0.70
0.50
1.6
0.6
= 10 k ohms)
(Both Types)
0.2
0.35
0.6
1.4.5.
Valley Current
IV
"A
IVS = 10 Vdc. RG = 1.0 Mn)
MPU6027
MPU6028
-
18
18
50
25
IVS = 10 Vdc, RG = 10 k ohm.)
MPU6027
MPU6028
70
25
270
270
-
-
1.0
3.0
10
-
5.0
50
-
Gate to Anode Leakage Current
"A
Volts
VT
1.0 Mlli
co
Unit
nAdc
IGAO
IVS = 40 Vdc. TA = 25°C. Cathode Open)
IVS = 40 Vdc. TA'= 75°C. Cathode Open)
-
-
IGKS
Forward Voltage IIF = 50 mA Peak)
1.6
VF
-
0.8
1.5
Volts
Peak Output Voltage
IVB = 20 Vdc. Cc = 0.2 "F)
3,7
Vo
6.0
11
-
Volts
tr
-
40
80
ns
Gate to Cathode Leakage Current
nAdc
IVS'= 40 Vdc. Anode to Cathode Shorted)
3
Pulse Voltage Rise Time
IVB = 20 Vdc. Cc = 0 2 "F)
-
FIGURE 1 - ELECTRICAL CHARACTERIZATION
[tJ
+Va
A
~
R2
G
RG
~Vs = RIR:
R2 Va
A1R2
+ R2
= RI
RG
RI
-=-
vAK
K
1A - Programmable Unijunction
with "Program" Resistors
R1 and R2
Vs
--tp~----~----~--_ IA
1 B - Equivalent Test Circuit for
Figure 1A used for electrical
IGAO
characteristics testing
Ie - Electrical Characteristics
(also see Figure 2)
FIGURE 3 - Vo AND tr TEST CIRCUIT
FIGURE 2 - PEAK CURRENT lip) TEST CIRCUIT,
+V
510 k
16 k
Va
6V
R
27 k
Scope
20
Put
20
Under
Test
7-191
n
0.6 V't';;.,;;;j!-+-________
MPU6027, MPU6028
TYPICAL VALLEY CURRENT BEHAVIOR
FIGURE 5 - EFFECT OF TEMPERATURE
FIGURE 4 - EFFECT OF SUPPLY VOLTAGE
1000
25 0 C
I==TA
500 ~ISEE FIGURE 11
!
RG
lOkl!=
>- 200
I
~
«
>
?
-
~
300
0
lOOk(!
........
50
30
20
10 ~
5.0
-
0
10
1.0M,,_
15
10
5,0
-50
20
w
+50
+25
+75
CC', 0.2"F
TA=25 0C
7
/"
1--
/'
5
0.5
~
0.2
~
0.1
'"
0.05
...... V
V
-
V
0
> 0.02
0.01
0.01
+100
ISEE FIGURE 31
1.U
o
u:
•
i'-
r-...1.0 M
FIGURE 7 - PEAK OUTPUT VOLTAGE
f--
~
....
TA, AMBIENT TEMPERATURE lOCI
25
>
~
r-.
-25
.FIGURE 6 - FORWARD VOLTAGE
~
~
i---VS' 10 VOLTS
ISEE FIGURE 11
VS,SUPPL Y VOLTAGE IVOLTSI
to
--!lG - 10 kl!
I-..
100 kll
100
"-
o
0.02
0.05
0.1
0.2
0,5
.1.0
2.0
o
5.0
5.0
./
--
1--;.- /
10
~
l--- ~
15
20
25
30
VS.SUPPLY VOLTAGE IVOLTSI
IF, PEAK FORWARO CURRENT IAMPI
FIGURE 8 - STANDARD UNIJUNCTION
COMPARED TO PROGRAMMABLE UNIJUNCTION
STANDARD UNIJUNCTION
,.----1'--+
B2
E f L { P: : RBB = Rl + R2
R 1 ~:
BI
Equivalent Circuit
Bl
Circuit Symbol
PROGRAMMABLE UNIJUNCTION
E
~P
. G
N
P
N
K
Rl
Ri"'+'R2
•
Typical Application
::RBB:Rl+R2
RI
1) = Rl + R2
RI
K
BI
Circuit Symbol
Equivalent Circuit
with External "Program"
Resistors R 1 and R2
7-192
Typical Applicetlon
35
40
MPU6027. MPU6028
TYPICAL PEAK CURRENT BEHAVIOR
MPU6027
FIGURE 9 - EFF ECT OF SUPPL Y VOL TAGE ANO RG
FIGURE 10 - EFFECT OF TEMPERATURE AND RG
100
0
0
5. 0
1
~
3. 0
.3
~ 2.0
a
1. 0
><
«
~
!f
«
S
«
~.
C
20
4
8
I'
16
IT IAV), AVERAGE ON~TAH CURRENT (AMP)
IT (AVI, AVERAGE ON STATE CURRENT lAMP)
7-203
20
SCl36
series
MT2
O~---IO~
G
o MT1
TRIACS
3 AMPER ES RMS .
200-600 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies_
•
Low Off-State Leakage Currents
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•
Rugged Industry Proven ThermopadL1 Construction
•
TO-5 Lead Form Available
MAXIMUM RATINGS
Symbol
Rating'
Peak Repetitive Off-State Voltage
(TC = 1100 CI
•
Value
Unit
IT(RMS)
200
300
400
500
600
3_0
Amp
ITSM
30
Amp
12t
3.6
A2s
(t = 1 to 8.3 ms)
Critical Rate of Rise of On·State Current
di/dt
Peak Gate Power
PGM
5.0
5.0
0.1
5.0
-40 to +110
-40 to +150
B
C
SC136.1 0
E
M
RMS On-5tate Current
(TC =65°C)
Peak Non-Repetitive Surge Current
K
Volts
VORM
STYLE 7
PIN 1 MTl
2 GATE
3 MT2
(One Full Cycle, 60 Hz)
Circuit Fusing
Average Gate Power
PG(AV)
Peak Gata Voltage
VGM
Operating Junction Temperature Range
TJ
Tsto
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Junction to Ambient
AIl'S
Watts
Watt
Volts
°c
°c
DIM
A
8
C
D
F
G
H
Symbol
R9JC
R9JA
Max
10
75
ATrademark of Motorola Inc.
I
Unit
°C/W
°C/W
J
K
M
n
R
5
U
v
MILLIMETERS
MIN MAX
10.80 11.05
749
7.75
1.41
1.67
0.51
0.66
1.92
3.18
2.31
2.46
1.17
2.41
0.64
0.38
15.11 16.64
30 TYP
4.01
3.76
1.14
1.40
0.89
0.64
3.94
3.68
1.01
INCHES
MIN MAX
0.425 0.435
0.195 0.305
0.095 0.105
0.020 0.016
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0655
30 TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
CASE 77·04
TO·126
7-204
SC 136 series
-ELECTRICAL CHARACTERISTICS (TC = +2So C either polarity of MT2·to MT1 voltage unle.. otherwise notedl
Symbol
Characteristic
Peak Oll-State Current
(VO = Rated VORM, Gate Open I
-
-
10
500
1.8
TC = 2So C
TC
=-40o C
Modesl
...............
........
0.2
-
-
-
50
100
-
-
mAde
= 25°C
TC
-
-
-
-
-
=-40°C
dv/dt
50
100
-
100
200
15
-
Volts/"s
-
TC = 110°C
dv/dt(el
VoltS/IlS
-
TC = 65°C
-
5
./
/
I'\.
'\ / .
V
r--.....
i""-
CAS
,/'
I
\
O.B
.,../
1.6
V"
.....V
7
REFERENCE:
•
FIGURE 2 - MAXIMUM POWER DISSIPATION
'\
o
-
mAde
AMBIENT
30
2.0
3.0
-
...............
,I
~
~ 50
"...x
"
-
TJ= 110DC
GATE POWER ~ .IW
FULL-WAVE
SINUSOIDAL CURRENT
I\.
"\
70
50
J
90
~
g
-
-
t""- r-..
'"::>
~
-
FIGURE 1 - RMS CURRENT OERATING
w
25
IL
TC
Trigger Source: 10 V, 50 Ohms,
MT2 (+1, G (+1; MT2 (-I, G H;
MT2 (+1, G (-I
Critical Rate-af-Rise of Off-State Voltage
(VO = Rated VORM, Gate Open I
Critical Rate-af-Rise of Commutating Voltage
(VO = Rated VORM, IT(RMSI = 3 A,
di/dt = 1.6 Alms, Gate Openl
...ill
-
IH
latching Current
~
-
Vde
TC = 2So C
TC = -40o C
TC = 110°C
= 24 Vde, RL = 200 Ohms, Gate Open I
S '\.
Volts
VGT
(VO = 24 Vdel
Trigger Source: 6 VI 50 Ohms,
MT2 (+1, G (+1; MT2 (-I, G H;
MT2 (+1, G (-I
w
-
mAde
TC = 25°C
TC = -40°C
~ 110
-
-
Unit
IlA
IGT
Holding Current
(VO
Max
VTM
(Vo = 12 Vdc, RL = 50 Ohmsl
MT2 (+1, G (+1; MT2 (-I, G (-I, MT2 (+1 G (-I
OC Gate Trigger Voltage
(VO = 12 Vde, RL = SOOhmsl
MT2 (+1, G (+1; MT2 H, G H; MT2 (+1, G H
= Rated VORM, All
Typ
TC = +2So C
TC ~ +110o C
Peak On-State Voltege
(lTM = SA,Puise Width - 1 ms, Outy Cycle < 2%1
DC Gate Trigger Current
(VO = 6 Vde, R L = 50 Ohmsl
MT2 (+1, G (+1; MT2 (-I, G H; MT2 (+1, G H
(VO
Min
IORM
2.4
,.,
..,- / '
O.B
3.2
V
TJ=IIODC
FULL-WAVE
SINUSOIDAL
CURRENT
7-205
-
I
1.6
2.4
ITIRMSI,RMS ON-STATE CURRENT lAMP)
ITlRMS), RMS ON-STATE CURRENT (AMP)
-
.. 3.2
SC141
SC146
MT2
O~---t.,;~
G
TRIACS
6 ANO 10 AMPERES RMS
200-600 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for full·wave ac control applications, such as
light dimmers, motor controls, heating controls and po.wer supplies.
MT2
• Triggering Specified in Three Quadrants
• Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater. Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt.a. Construction for Low Thermal
" Resistance, High Heat Dissipation and Durability
MTI
MT2
GATE
MAXIMUM RATINGS
Rating
Peak Repetitive Off-State Voltage, Gate Ope!".
SC141
SCI46
•
Symbol
M
SC141
SC146
Peak Non·Repetitive Surge Current
One Full Cvcle, 60 Hz
SC141
SCI46
Circuit Fusing Considerations
SC141
t = 8.3 ms
SC146
Peak Gate Power {Pulse Width = 10 I'sl
Average Gate Power (TC = +80 oC, t =8.3 msl
Peak Gate Current (Pulse Width = 10 I'sl
Peak G.te Voltage
Operating Junction Temperature Range
Storage Temperature Range
Unit
Volts
200
400
500
600
.~~
RMS On-State Current
TC = BOaC
Value
VORM
Amp
IT{RMSI
-
6
10
Amp
ITSM
80
120
12 t
PGM
PG(Avl
IGM
VGM
TJ
T stg
A2s
26.5
60
10
0.5
3.5
10
-40 to +100
-40 to +125
MILLIMETERS
Watts
Watt
Amp
Volts
°c
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
SC141
SCI46
Symbol
R8JC
Max
Unit
°C/W
2.2·
1.5
This is advance information and specifications are subject to change without notice.
"Trademark of Motorola Inc.
7-206
STYLE 2.
PIN 1. MAIN JERMINAll
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM
A
MIN
MAX
INCHES
MIN
MAX
0560 0.625
1423 1587
B
10.66 0.380 0.420
C
0.140 0.190
4.82
35
D
1.14
0.020 0045
051
F
3.531 3733 0.139 0.147
0.090 0110
G
2.79
2.29
0.250
H
6.35
0.012 0.045
J
0.31
0.500 0.562
K
12.70 1427
l
0.045 0070
171
0.190 0.210
N
483 533
0100 0120
2.54 304
n
0.080 0115
2.04 292
R
S
0.020 0055
1.39
051
T
0.230 0.270
585 685
CASE 221.()2
10·220 AB
All JEDEC dimensions and notes apply
"'
-
SC141,SC146
ELECTRICAL CHARACTERISTICS (TC ~ +250 C, Either Polarity of MT2 - to - MTI Voltage unless otherwise noted I
Symbol
Characteristic
Peak Off-State Current
Min
Typ
Max
Unjt
mA
-
-
0.1
0.5
-
-
1.83
1.65
IORM
VO: Rated VORM I
TC: +25 0 C
TC = +1000 C
Gate Open-Circuited
Peak On-State Voltage
Pulse Width .. 1 ms, Duty Cycle .. 2%.
SC141 ITM : 8.5 A Peak
SC146 ITM : 14 A Peak
Critical Rate of Rise of 0lf-State Voltage
VO: Rated VORM, Gate Open-Circuited,
Volts
VTM
50·
dv/dt
Volts/"s
TC: +1000 C
Exponential Waveform
dv/dt(cl
Critical Rate-ot-Rise of Commutating Off-State Voltage (1)
Volts/"s
IT(RMSI: Rated IT(RMSI, Vo : Rated VORM,
TC = +800 C
Gate Open-Circuited
SC141 Commutating dildt = 3.2 Alms
SC146 Commutating di/dt:5.4 Aim,
DC Gate Trigger Current
92
w
~
-
80
80
-
-
-
-
- -
2.5
2.5
3.5
3.5
mAdc
-
-
50
100
mAdc
IL
f·
:-"-
"-
-
Vdc
TC: +25 0 C
TC: -40°C
,
-
~
5Jro 60 1HZ_
FIGURE 2 - POWER DISSIPATION
o
~
iii
o
,.=
.........
:-"-
'\
'\.
:-"-
{T'
l\.
I'\.
~
w
"
50
30
SCI41
STEADY STATE
RMS LIMIT'
20
yo
'/
SCI46
STEADY STATE
RMS LIMIT
10
'"ffi
~C146
100
200
200
400
100
z
:-"-
"
-
-
FIGURE 1 - RMSCURRENT DERATING
~
50
50
0.2
VO: 24 Vdc
Gate Tri"gger Source = 15 V,100 Ohms, Trigger Mode
MT2 (+1, Gate (+1; MT2 (-I, Gate H
MT2 (+1. Gate H
MT2 (+1, Gate (+1; MT2 H, Gate H;
TC: -40°C
MT2 (+1, Gate (-I;
TC: -40°C
~
-
-
Latching Current
96
-
IH
Vo = 24 Vdc, IT: 0.5A
Puls~ Width: 1 ms, Duty Cycle .. 2%.
Gate Trigger Source = 7 V, 20 Ohms
w
mAdc
VGT
Holding Current
=
=>
~
-
IGT
VO: 12 Vdc, Trigger Mode
MT2 (+1, Gate (+1; MT2 (-I, Gate H; RL=1000hms
MT2 (+1, Gate H; RL: 50 Ohms
MT2 (+1, Gate (+1; MT2 H, Gate H; RL : 50 Ohms
TC: -40°C
MT2 (+1, Gate H; RL: 25 Ohms;
TC: -40°C
DC Gate Trigger Vol tage
V 0 : 12 Vdc, Trigger Mode
MT2 (+1, Gate (+1; MT2 H, Gate (-I; RL : 100 Ohms
MT2 (+1, Gate (-I; RL : 50 Ohms
MT2 (+1, Gate (+1; MT2 H, Gate (-I; RL : 50 Ohms
TC: -40°C
MT2 (+1, Gate (-I; RL " 25 Ohms;
TC: -40°C
VO: Rated VORM; RL: 1000 Ohms; All Polarities
TC: +100o C
~ 100
-
4
4
>
'"
1i
..........
';1x"
i""...
~
10
IT(RMSI. RMS ON.sTATE CURRENT (AMP)
ii:"
7-207
,y
I
0.5 0.7
.#
I.TJ '" lOooe
2.t ONOUCTION ANGLE;; 3600
3.t URRENT WAVEFORM IS
SINUSDIDAL
2
3
5
7
10
20
ITIRMS),RMSDN.sTATE CURRENT lAMP)
30
SC245
SC245 ( )3
SC246
TRIACS
MT2
o----~.. ~
10 AMPERES RMS
200-600 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and military applications for the
fullwave control of ac loads in applications such as light dimmers,
power supplies, heating controls, motor controls, welding equipment
and power switching systems.
• All Diffused and Glass Passivated Junctions for Greater Stability
• Gate Triggering Guaranteed In All '4 Ouadrants
• Three Package Choices
Pressfit - SC245 Series
Stud - SC246 Series
Isolated Stud - SC245 ( ) 3 Series
CASE 174-03
SC245
STUD
STYLE 3
TERM 1 MAIN TERMINAL 1
2 GATE
STUD MAIN TERMINAL Z
MAXIMUM RATINGS
Rating
Repetitive Peak Off·State Voltege (11
TC = _40 o C to +1000 C
SC246B, SC245B, SC245B3
,
SC246D, SC245D, SC245D3
SC246E, SC245E, SC245'E3
SC246M, SC245M, SC245M3
RMS On·Stat. Current
Peak Non·Repetitive Surge Current
(On. Full Cycle,60 Hzl
Circuit Fusing Considerations
t= 1 ms
t =8.3 ms
Peak Gate Power
Average Gat. Power
Operating Junction Temperature Range
Storage Tamperatur. Range
Stud Torque
Symbol
Value
VDRM
IT(RMSI
ITSM
200
400
500
600
10
100
12 t
PGM
PG(AVI
TJ
Toto
Unit
Volts
B
C
F
H
J
K
L
20
41.5
10
0.5
-40 to +100
-40 to +126
3u
Q
Amp
Amp
A2.
INCHES
MIN MAX
0604 0614
0.5510.559
14001420
.8150.9
2010 2413
089 216 00350.085
D.09r,REF
229REF
10611156 0420 (1455
918 1054 D.JB5 0415
699 7.15 02150305
.065
.1
165 405
DOSS REf
165 REF
1210 1283 0500 0.505
MILLIMETERS
DIM MIN MAX
A 1534 1560
R
T
CASE 175-02
SC245( 13
ISOLATED
STUD
STYlE 2
PIN 1 MAIN TERMINAL I
2. GATE
3. MAIN TERMINAL 2
STUD ISOLATED
Watts
Watt
uC
°c
in. lb.
THERMAL CHARACTERISTICS
Character
Thermal Resistance, Junction to Case
Prossfit and Stud
Isolated Stud
Symbol
MIX
R9JC
Unit
°CIW
2.0
2.15
CASE 235-02
7-208
SC245, SC245( )3, SC246
ELECTRICAL CHARACTERISTICS (TC = +250 C, either polarity of MT2 to MTl unless otherwise noted I
Symbol
Characteristic
Peak Off-5tate Current
Rated VORM = Peak Off-State Voltage,
Gate Open-Circuited
TC = +250
TC = +100 0 C
Peak On-State Voltage
ITM = 14 A Peak, Pulse Width = 1 ms,
Duty Cycle'; 2%.
Min
Typ
Max
-
-
Volts
Unit
mA
IORM
VTM
-
-
0.1
0.5
1.65
dv/dt
-
50
-
Volts/lls
dv/dtlcl
4
-
-
Volts/lls
-
Critical Rate of Rise of Off·State Voltage
Rated VORM, Gate Open-Circuited,
Exponential Waveform
TC = +1000 C
Critical Rate-of-Rise of Commutating Off-State Voltage
ITIRMSI = Rated RMS On-State Current
VORM = Rated Peak Off-State Voltage,
Gate Open-Circuited, Commutating dildt = 5.4 Alms
TC = +78.5 0 C
DC Gate Trigger Current
mAde
IGT
VO= 12Vdc
MT2 1+I,Gate 1+1; MT2 1-1, Gate I-I; RL = lOOn
MT2 1+1, Gate I-I;
RL=50n
MT2 1+1, Gate 1+1; MT2 1-1, Gate 1-1 RL= 50n, TC=-40oC
MT2 1+1, Gate I-I
RL= 25n, TC =-40 o C
DC Gate Trigger Voltage
VO=12Vdc
MT2 1+1. Gate 1+1; MT2 1-1, Gate I-I; RL=100n
MT2 1+1, Gate I-I
RL = 50n
MT2 1+1, Gate 1+1; MT2 I-I, Gate 1-1 RL = 50n, TC = -40 0 C
MT2 1+1, Gate I-I
RL = 25n, TC = -40°C
Vo = Rated VORM,RL = 1 kn, TC = 100°C
All Trigger Modes
Holding Current
-
-
-
-
50
50
80
80
-
-
2.5
2.5
3.5
3.5
-
Vdc
VGT
-
-
.2
mAde
IH
Main Terminal Voltage" 24 Vdc, IT = 0.5A
Pulse Width = 0.1 to 10 ms
Gate Trigger Source = 7 V, 20 Ohms
TC = +250 C
TC =-40o C
-
Latching Current
-
-
50
100
mAde
IL
Main Terminal Source Voltage = 24 Vdc,
Gate Trigger Source = 15 V, 1 00 O~ms,
Pulse Width => 50 JlS, Rise and Fall Times maximum
Trigger Mode
.
MT2
MT2
MT2
MT2
1+1, Gate
1+1, Gat.
1+1, Gate
1+1, Gate
1+1; MT2 I-I, Gate I-I; TC = 25°C
I-I
1+); MT2 1-1, Gate 1-1; TC = -40o C
1-)
w
~ 96
"'- ~
~
i
........ ;:-.....
_ 92
~
....
w 88
~
~ 84
~
.
..'"x'"
j
!!5
......... .......
.......
FULL WAVE
r - SINUSOIDAL
t--
80
WAVEFORM
,
)0...
,/'
ISOLATED STUD
.,..
z
o
-
-
100
200
200
400
.0
100
20
~ 10
.....
STEADY·STATE
RMS LIMIT
C
....... ......
"
o
-
-
::;
......
76
72
i
200
~
STUD AND PRESSFIT
/'
K.
-
FIGURE 2 - MAXIMUM ON-5TATE POWER DISSIPATION
FIGURE 1 - CURRENT DERATING
~ 100
•
= 5 JJS
~w
'"
.
"""'-
::;
"
:;;(.0.5
;;
TJ '" 100OC-f-
./
FULL.wAVE
SINEWAVE
OPERATION
I-
~E
~O.2
10
0.6
10
20
ITIRMS). RMS ON·STATE CURRENT lAMP)
IT(RMS). RMS orl-STATE CURRENT lAMP)
7-209
40
60
SC250
SC250( )3
SC251
TRIACS
OMTI
15 AMPERES RMS
200-600 VOLTS
mLE3'
TERM. I. GATE
2. MAIN TERMINAL 1
1 MAIN TERMINAL Z
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and military applications for the
control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power
switching systems; or wherever full-wave, silicon gate controlled solidstate devices a're needed.
• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud and Isolated Stud Packages
• Gate Triggering Guaranteed In All 3 Quadrants
MAXIMUM RATINGS
•
Rating
Repelitive Peak Off-State Voltage
. SC251B, SC250B, SC250B3
SC251 D. SC250D, SC250D3
SC251E, SC250E, SC250E3
SC251 M, SC250M, SC250M3
RMS OnoState Current
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz'
Circuit FUSing Considerations
t-' rns
t 8.3 ms
Symbol
'IT(RMS)
ITSM
Piak Gete Power (Pulse Width = 10 ps'
Operating Junction Temperature Range
Storage Temperature Range
Unit
Volts
200
400
500
600
15
100
Amp
Amp
12 t
PGM
20
41.5
10
Watts
PG(AV)
0.5
Watt
IGM
TJ
2
-40 to +115
-40 to +125
Amp
30
in. lb.
=
Peak Gate Power
Average Gate Power
Valua
VORM
Tit
Stud Torque
CASE 175·02
SC260( )3
ISOLATED STUD
STYlEl.
PIN 1 MAIN TERMINAL I
2. GATE
3 MAIN TERMlHAl2
STUOISOlATED
t~·-"
B
A
I -.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
SC250, SC251
SC250 ( ) 3
Symbol
Max
R8JC
2
2.3
Unit
INCHES
MillIMETERS
DIM • • MAX MIN MAl
A 1400 IUD 0.5510.559
•
12.13 12.13 0.501 D.5t5
C
26.16
1.030
f
1.65
4. • 0.065 0.160
0255
G
L"
H
2.18 2.41 0.015 0.095
J
10.&111.56 0420 0.455
K
9.11 10.54 0.385 0.415
l
UI US 6.2150.3t15
II
6.41 6.99 0.Z5S 6.215
1 0.135 0150
1.52 1.11 0.010 0010
0.89 UI o.m 0085
CASE 236<12
This Is advance information and specifications are subject to change without notice.
7-210
'~I
R-j
1-
H
~r'
HI~:;;~r
c
f-J
N
=
=
L-=
1/4lBUNF2A
SC250,SC250( )3,SC251
ELECTRICAL CHARACTERISTICS
(TC ~ +2So C unle.. otherwise noted Velues apply for either polarity of Main Terminel 2 Characteristics referenced to Main Terminal 1 I
Symbol
Typ
Max
Unit
Min
Characteristic
mA
Peak Off-Stat. Current
IORM
Vo ~ Rated VORM
0
0.1
TC = +25 C
Gate Open-Circuited
0.5
TC = +1150 C
1.65
Volts
P.ak On-State Voltage
VTM
ITM - 21 A. Pul •• Width = 1 ms. Duty Cycl ... 2%.
100
Critical Ret. of Rise of Off-St.t. Voltage
dv/dt
Volts/"s
Rated VORM. Gat. O~n·Circuit.d.
Exponential Waveform.
TC = +1150 C
VoltST",
dv/dt(CI
Critical Rate-of-Ris. of Commutating Off-State Voltag. (1 I
IT(RMSI = Rated RM5 On-Stat. Current. Vo = VORM
Gate Open-Circuitod. Commutating di/dt = 8 Alms
'SC250.SC251
TC = +84 o C
4
SC250( 13
TC = +7SoC
4
mAde
DC Gate Trigger Current
IGT
VO=12Vdc
50
MT2 (+1. Gate (+1; MT2 (-I. Gat. (-I; RL = 100 Ohms
50
MT2 (+1.' Gate (-I; RL - 50 Ohms
mAde
DC Gate Trigger Current
IGT
Vo = 12 Vdc. TC = -40°C
80
MT2 (+1. Gate (+1; MT2 (-I. Gate (-I; RL : 50 Ohms
80
MT2 (+1. Gat. (-I; R L : 25 Ohms
Vdc
DC Gata Trigger Voltage
VGT
VO: 12Vdc
2.5
MT2 (+1. Gate (+1; MT2 i-I. Gata i-I; RL = 100 Ohms
2.5
MT2 (+1. Gate'(-I; RL : 50 Ohm.
Vdc
DC Gate Trigger Voltag.
VGT
Vo = 12 Vdc. TC: -40°C
MT2 (+1. Gate (+1; MT2 (-I. Gat. (-I; RL = 50 Ohm.
3.5
3.5
MT2 (+1. Gat. i-I; RL· 25 Ohm.
Vdc
DC Gate Non-Trigger Voltage
VGO
0.20
Vo = Rat.d VORM. RL - 1 K Ohms. TC = 115°C
All Trigger Mode.
mAde
Holding Current
IH
VO: 24 Vdc. Peak Initiating Current: 0.5 A.
Puis. Width: 0.1 to 10 ms. Gat. Trigger
Source = 7 V. 20 Ohm.
TC: +25 0 C
50
100
TC = -40°C
mAde
Latching Current
IL
VO: 24 Vdc. Gate Trigger Source = 15 V, 100 Ohms.
Pulse Width = 50 p.s, 51JS Maximum Rise and Fall Times
MT2 (+1. Gata (+1; MT2 i-I. Gate (-);
100
MT2 (+1. Gate i-I
TC: 25°C
MT2 (+1. Gate (+1; MT2 (-I. Gate (-I;
TC: _40°C
200
MT2 (+1. Gate (-I
-
-
-
.
-
-
-
-
-
-
-
-
-
FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION
f;IGURE 1 - CURRENT DERATING
""""",=
,
FULL
~ !::--..
,
°fERATION
....... t:--..
"- ~ESSFIT&STUD
,
"'1...'
,
ISOLATED STUD ' "
r--- r---"
,
20
W~VE SIN~ WAVE
7
,/
2
./
•
..........
"" , "
1/
't7~
./
TJ "" [lI60C
~
FULL WAVE
SINE WAVE
I---
OPERfTlON
0
12
IT(RMSI. RMS ON STATE CURRENT fAMP!
12
If(RMSI, RMS A.VERAGE DN-5TATE CURRENT (AMP)
7-211
v
\--
"
•
SC260
SC260( )3
SC261
MT2
O----~..
~
G
OMTI
TRIACS
26 AMPERES RMS
200-600 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and military applications for the
control of ac loads in applications such as light dimmers, power sup·
plies, heating controls, motor controls, welding equipment arid power
switching systems; or wherever full·wave, silicon gate controlled solidstate devices are needed.
SC261
ST'flE2
1 MTI
2 GATE
CASE MT2
• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud and Isolated Stud Packages
• Gate Triggering Guaranteed In All 3 Quadrants
MILLIMETERS
DIM MIN MAX
12131283
·t'~ sink thermal
r.slstillncc. Main terrninal 2 and heal sink contac;t pad an. cammon,
For soldering PUfJ,lOSCS. {either tltrmin:ll connection or device ITIOuntlngl, $olderlng tern·
peratures s.hall not i!)(cF.-ed -10 2000C. for 10 seconds. Consult fa:::to,'( tor I",ad bending
options..
"'Trademark of Motorola Inc,
7-214
CASE 77·04
T0-126
T2300P, T2301P, T2302P series
ELECTRICAL CHARACTERISTICS
(Voltage reference is to main terminal 1. Data applies for either polarity of MT2 to MT1 voltages and for TC == 25°C unless otherwise noted,)
Characteristic
All Types
Peak Repetitive Off-State Current
(VO ' Rated VORM, Gate Open, TC' 100DC)
Peak On-State Voltage
(lTM ' 3.5 A, Pulse Width", 1 ms, Outy Cycle .. 2%)
All Types
DC Gate Trigger Voltage (All Modesl
(VO'12V,RL'30n)
(VO ' Rated VORM, RL ' 10 kn, TC '.lOODC)
Symbol
Min
Typ
Max
Unit
IORM
-
-
0.75
mA
VTM
-
-
1.8
Volts
-
-
2.2
-
-
-
-
3.0
4.0
10
-
-
Volts
VGTM
0.15
DC Gate Trigger Current (All Modesl
mA
IGTM
T2300P Series
T2301 P Series
T2302P Series
(VO'12V,RL'30nl
Holding Current
-
mA
IH
T2300P, T2301 P Series
T2302P Series
T2300P, T2301 P Series
T2302P Series
(VO '12 V, ITM '150 mA, Gate Open)
(TC ' _40DC)
Gate-Controlled Turn-On Time
All Types
tgt
-
All Types
dv/dt(c)
-
2.0
5.0
15
17
35
2.5
~s
(VO ' Rated VORM, IG ' 60 mA, ITM ' 3.5 A)
Critical Rate of Rise of Commutating Voltage
V/~s
(VOM ' Rated VORM, IT(RMS) , 2.5 A,
dl/dt ' 0.95 Alms, Gate Unenergized, T C ' 70 DC)
Critical Rate of Rise of Off-State Voltage
(VOM = Rated VORM, Exponential Rise, Gate Open)
T2300P, T2301P Series
(TC' 90 DC)
(TC'lOODC)
T2302P Series
100
~
w
'"=>
....
~
~
....
w
~
--
-
l"- i--.
BO
!--
60
FIGURE 2 - RMS CURRENT DERATING FOR
OPERATION WITHOUT HEAT SINK
I"
~
--
w
=>
"'
....
~
75
~
....
....
~
50
I.
I
..... r-...
I
I
I
I
Full-wave sinusoidal waveform .
"- f',
..... r-...
iii
,....'"=>
,.
40
I'..
25
,.x
Full-waveslnusotdalwaveform.
'"U
....
-
5.0
10
100
;3
1!i
'"
1.0
;:
1..===
-::;
./
0.4
r::::-
./
V / V
V
:/
/'
w
'"
~>
0.8
1.0
ITIRMS). RMS ON·STATE CURRENT lAMP)
IT(RMS), RMS ON·STATE CURRENT lAMP)
TVPlcal
I-- f-
1
l../ '". / / '
:/
0.8
Full-wave sinusoidal waveform .
1.2
1.6
2.0
IT(RMS), RMS ON·STATE CURRENT (AMP)
7-215
2.4
2.B
1.2
I--
•
12500
MT2
o-----1~
..~=-G--O MTI
TRIACS
6 AMPERES RMS
200-400 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for full·wave ac control applications, such as
light dimmers, motor controls, ~eating controls and,power supplies.
•
Blocking Voltage to 400 Volts
•
All Diffused and Glass Passivated Junctions for Greater
Parameter Uniformity and Stability
MT2
MT1
MT2
G
• Small, Rugged, Thermowatt A Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
MAXIMUM RATINGS
Rating
Peak Repetitive Off·State Voltage
ITJ = -40 to +IOOo C) Gate Open
T2500
•
Symbol
Unit
Volt.
Value
VOROM
B
0
RMS On·State Current
(TC = +BOaC)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non·Repetitive Surge Current
(One Full CY,cle,,60 Hz, TC = +800 CI, _ ,
Peak Gate Power
, (T C = +BOaC, Pulse Width = 1 ,..1
Average Gate Power
(TC = +BOaC, t a 8.3 ms)
IT(RMSI
200
400
6
Amp
ITSM
60
Amp
PGM
16
Watts
PG(AV)
0.2
Watt
IGTM
TJ
T sta
4
-40 to +100
-40 to +150
Amp
C
DC
MILLIMETERS
Paak uata Trigger Current (Pulse Width = 10,..1
Operating JUnction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
STYLE 2:
PIN I.MAIN TERMINAL 1
2, MAIN TERMINAL 2
3, GATE
4, MAIN TERMINAL 2
I
Symbol
RSJC
I
Max
.1
2.7
ATrademlrk of Motorola Inc.
7-216
Unit
DC/W
DIM
MIN
MAX
INCit..-MAX
MJ!!
14,23 15,87 0,560 0,625
1 ,66 0,380 0,420
C
3,56 4,82 0,140 0,190
0
l,I4 0,020 0,045
0,51
F
3,31 3,733 0,139 0,147
G
2,29 2,79 0,090 0,110
H
6,35
- 0,250
J
31 l,I4 0,012 0,045
K
0.562
0500
14.27
12
L
0,045 0,070
U7
N
Yi 5,33 0,190 0,210
Q
0,100 0,120
,04
4
2.04 2~2 0,080 0,115
R
S
0,020 0,055
.1 L39
T
5,85 6,85 0.230 0,270
CASE 221.02
TO·22DAB
All JEDEC dimensions and notes apply
A
8
°
T2500
ELECTRICAL CHARACTERISTICS
(Tc
= 250 C and
Charect.iltic
Peak Off-5tate Current
Vo = Aated VOAM@TJ
Either Polarity of MT2-to-MTl Voltage, unless otherwise specifiedJ
Typ
Symbol
Min
Max
-
lOAM
= 1000 C, Gate Open
Maximum On-5tate Voltage (Either Direction)
ITM =30 A Peak
VTM
Gate Trigger Current, Continuous de
-
2
Unit
mA
-
2
Volts
mA
IGT
VD =12 Vdc, AL = 12 Ohms
VMT2 (+), VG(+)
VMT2 (+), VGH
VMT2H,VGH
VMT2 H, VG(+)
Gata Trigger Voltaga, Continuous de (All Polarities)
Vo = 12 Vdc, AL = 12 Ohms
VD = VOAM, AL = 125 Ohms, TC = 1000 C
Holding Current
Vo = 12 Vdc, Gate Opan
Initiating Current = 150 mA, TC = 25 0 C
Gate Controlled Turn-Dn·Time
Vo = Aated VOAM, IT = 10 A,
IGT = 160 mA, Ai .. Time =0.1 ~s
-
25
60
25
60
1.25
2.5
15
30
mA
'"
IHO
lot
-
1.6
2.5
dv/dt(c)
-
10
-
VGT
Critical Rate of Rise of Commutation Voltage
Vo = Aated VOAM, IT(AMS) = 6 A,
10
20
15
30
0.2
-
Volts
-
-
V/~s
Commutating di/dt = 3.2 Alms,
Gate Unenergized, TC =BOoC
Critical Aate of Aise of Off-5tate Voltage
Vo = Aated VORM, Exponential Voltage Aise,
Gate Open, T C =100 0 C
T2500B
T25000
V/~s
dv/dt
-
100
75
-
-
-
~ 10
01".
6
2
~
" '"
FUILL W~VE I
SINUSOIDAL WAVEFORM- I--
"-
0
/
2
,;'
~V -/
" "'~
./
/
/
./
V'
TYPICAL
V
V ",..
"2
FJLL W~VE I
I
I
SINUSOIDAL WAVEFORM
~
"-
V
MAXIMUM
-
8
....,'
•
FIGURE 2 - POWER DISSIPATION
FIGURE 1 - CURRENT DERATING
/. :;....- .....
0 ...... ~
~
10
4
ITlRMSJ, RMS ON-STATE CURRENT IAMI')
ITIRMS). RMS ON-STATE CURRENT lAMP)
7-217
12
14
T2800
T2802
MT2
o----li~~
....--G~O MTl
TRIACS
8 AMPERES RMS
200-600 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
. designed primarily for full·wave ac control appl ications, such as
light dimmers, motor controls, heating controls and power supplies.
) • Blocking Voltage to 600 Volts
MT2
•
All Diffused and Glass Passivated Junctions for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt.ol. Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
MTl
MT2
G
• T2800 - Four Quadrant Gating
T2802 - Two Quadrant Gating
MAXIMUM RATINGS
Symbol
Rating
Peak Repetitive Off·State Voltage (11 .
(T J = -40 to +100 0 CI Gate Open'
T2800
T2802
,
II
ITC
RMS On-State Current
(Conduction Angle ~ 360°C)
Value
VORM
\!
=+BOoCI
Unit
Volts
IT(RMS)
200
300
400
500
600
8
Amp
ITSM
100
Amp
12 t
50
A2 s
PGM
16
0.35
Watts
PG(AV)
IGTM
TJ
T stg
4
-40 to +100
-40 to +150
Symbol
Max
' R6JC
2.2
STYLE 2:
Peak Non-Repetitive Surge Current
(One, Full ,Cycle, 60 Hz, T J = +800 CI
Fusing Current
= -40 to +1000 C. t = 1.25 to 10 msl
Peak Gate Power (Pulse Width = 1 Ilsl
•
PIN 1. MAIN TERMINAL 1
2, MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
(TJ
Average Gate Power
Pe~k
Gate Trigger Current (Pulse Width = 1 jtSl
Operating Junction Temperatura Range
Storage Temperature Range
Watt
Amp
°c
°c
Thermal Resistance. Junction to Case
I
B
C
D
F
G
H
THERMAL CHARACTERISTICS
Characteristic
DIM
A
Unit
°C/W
(11 Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds
the rated blocking voltage.
"Trademark of Motorola Inc.
7-218
J
K
L
N
Q
~
S
T
MILLIMETERS
MIN MAX
14.23 '6.87
6 10.66
3.56 4.82
0.51
1.14
.531 3.733
2.29 2.79
6.35
...0;1 1.14
12.70 14.27
4. 3
4
2.04
I
5.85
II
5.33
3.04
2.92
1.39
6.85
INCHES
MIN MAX
0.560 0.625
0.380 0.420
0.140 0.150
0.020 0.045
0.139 0.147
0.090 0.110
0.250
0.012 0.045
0.500 0.562
0.045 0.010
0.190 0.210
0.100 0.120
0.080 0.115
0.020 0.055
0.230 0.270
CASE 221-02
TO·220AB
All JEDEC dimensions and notes apply
T2800, T2802
ELECTRICAL CHARACTERISTICS ITC
~ 25°C unles. otherwise noted)
Characteristic
Peak Off·Stete CUI rent (Either Direction)
R.ted VORM@ TC ~ lCOu C, Gate Open
Peak On·Stato Voltege (Either Direction)
IT ~ 30 A Peak
Gate Trigger Current, Continuous de
Vo ~ 12 Vdc, RL ~ 12 Ohm.
VMT2 (+), VG(+) T2800
T2B02
VMT2 (+), VGH T2800 Only
VMT2 <-). VGH T2800
T2802
VMT2 (_I, VG(+) T28000nlv
Gate Trigger Voltage, Continuous de (All Polarities~
Vo ~ 12 Vdc, RL = 100 Ohms
RL = 125 Ohm., Vo = VORM, TC = 100°C
Holding Current (Either Direction)
Vo = 12 Vdc, Gate Open,
T2800
IT=125mA
T2B02
Gat. Controlled Turn·On Tim.
Rated VOROM, IT ~ 10 A, IGT ~ 80 mA, Rise Time ~ 0.1 ".
Critical Rate of Rise of Commutation Voltage
Rated VORM, IT(RMS) = B.O A, Commutating di/d, ~ 4.3 AIm.,
Oate Unenergized, T C ~ BOoC
Critical Rate of Ri •• of OffoStata Voltage
Rated VORM,Exponential Voltage Rise,
Gate Open, TC ~ 100°C
T2BOO
T2802
Symbol
Min
Typ
Unit
-
Max
10RM
-
2
mA
VTM
-
1.7
2
Volts
-
10
25
20
15
25
30
25
50
60
25
50
60
-
1.25
2.5
-
-
-
w
<:
0.2
..........
5 95
...i'1i
~
90
igt
-
15
30
20
60
-
1.6
-
.......
~
co
~
85
B
80
VI".
VI".
-
100
B5
75
65
60
I
C
0
E
M
-
-
-
-
FIGURE 2 - POWER DISSIPATION
I
L
I-- -~I~~Ls~i;!~
I-- -WAVEFORM
FULL CYCLE
f-SINUSOIOAL
MAXIMUM/"
./
o
/
/ ./
V
//"
~AVEFORM
1---
:::>
,..
10
dv/dt{c)
TYPICAL
/"
~
~
.
-
dv/dt
'" ,
'"
w
'"x
'".
...'u"
1'0..
-. - -
w
j
mA
IHO
f'...
:::>
~
Volt.
VGT
FIGURE 1 - CURRENT DERATING
~ 100
mA
IGT
IL ~
/. V
........:: V
"' ~
~
A V
4
IT(RMS). RMS ON-5TATE CURRENT (AMP)
IT(RMSl, RMS ON·STATE CURRENT lAMP)
7-219
10
12
12801
MT20----~.. G
TRIACS
, 6 AMPERES RMS
200-600 VOLTS
BIDIRECTIONAL TRIODE THYRISTORS
... designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
•
MT2
Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater
Parameter Uniformity and Stability
MT1
MT2
G
• Small, Rugged, Thermowatt A Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
MAXIMUM RATINGS
Rating
Peak Repetitive Off-State Voltage (1 I
(TJ = -40 to +1000 CI Gate Opan
•
T2BOl
Symbol
Volue
Unit
Volts
VORM
H
(TC =+BOoCI
RMS On·State Current
(Conduction Angle = 360°C I
Peak Non-Repetitive Surge Current
(One Full Cycle,60 HzI
Fusing Current
(TJ =-40 to +1ooo C, t = 1 to 8.3 msl
Peak Gate Power
(TC = +BOaC, Pulse Width =2 /lsI
Average Gate Power
fTC = +800 C, t = B.3 msl
P.. k Gate Trigger Current (Pulse Width a 1 /lSI
Operating Junction Temperature Range
Storage Temperatura Range
200
300
400
500
600
ITiRMSI
6
Amp
ITSM
BO
Amp
12 t
35
A2 s
PGM
16
Watts
A
PG(AVI
0.35
Watt
B
C
D
IGTM
TJ
Tstg
4
-40 to +100
-40 to +150
Amp
F
G
H
Symbol
Max
2.2
DIM
°c
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
STVlE2:
PIN 1. MAIN TERMINAL 1
, 2. MAIN TERMINAl2
3. GATE
4. MAIN TERMINAL 2
•
K
l
N
Q
R6JC
I
Unit
°C/W
(11 Ratings apply for opan gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds
the rated blocking voltage.
..
This Is advance Information and specifications are subject to change without notice .
6Trademark of Motorola Inc.
7-220
R
S
T
MIlliMETERS
INCHES
MIN MAX MIN
MAX
14.23 15.87 0.560 0.625
10.66 0.380 0.420
3.56 4.82 0.140 0.190
1.14 0.020 0.045
51
.531 3.733 0.139 0.147
2.29 2.79 0.090 0.110
0.250
6.35
0.31 1.14 0.012 0.045
0.500 0.562
1 .70 14.27
0.045 0.070
171
0.190 0210
4.83 5.33
0.100 0.120
4 3.04
0.080 0.115
2.04 2.92
0.020 0.055
O. 1 1.39
0.230 0.270
5.85 6.85
CASE 221·02
TO·220AB
All JEDEC dimenSions and notes applv
T2801
ELECTRICAL CHARACTERISTICS ITc = 2So C, Either Polarity of MT2-to-MTI Voltage, unle.. otherwise specified)
Typ
Symbol
Max
Characteristic
Min
Peak Off-8tate Curront
IORM
2
Rated VORM, Gate Open, TJ = looo C
Peak On-State Voltage
3
VTM
2
ITM ·30 A P~ak; Pulse Width = 1 to 2 m., Outy Cycle C; 2%
-
Gate Trigger Curront, Continuous dc 11)
Vo -12 Vdc, RL = 12 Ohms
IGT
Gate Trigger Voltage, Continuous de: (1)
VGT
VO· 12 Vdc, RL = 12 Ohms
I
VO· VORM, RL = 125 Ohms, TC = l000 C
Holding Curront IElther Olrectlon)
VO· 12 Vdc, Gate Opan, Initiating Current = 150 rnA
Turn.()n Time (1) ,
Vo = Ratad VORM,IT· 10A,IGT =.BOmA, Rise Time =0.1 ".
Vo = Rated VORM, IT(RMS) = 6.0 A, Commutatlng di/dt = 4.3 Alms,
Gata Unenergized, T C = BOoC
25
-
1.5
rnA
SO
0.2
-
-
100
4
rnA
tgt
2.2
".
dv/dt(c)
10
V/"s
dv/dt
Critical Rat. of Ri •• of Off-State Voltage
Vo = VORM, Exponential Voltage Rise, Gats Open, TC = 1000 C
T2BOI
-
Volts
Volts
IH
Critical Rate of Rise of Commutation Voltage
Unit
mA
-
Ii
VII'S
50
40
30
20
-
-
-
-
-
-
11) Apphes for MT2 (+), G 1+), MT2 H, G H ,
FIGURE 1 - CURRENT OERATING
0
.........
r--....
i!!
["""'-..
FULL WAVE SINUSOIDAL
WAVEFORM
6
i'..
2
FIGURE 2 - POWER OISSIPATION
i
!--
z
0
10
-
/
FULL WAVE SINUSOIDAL
WAVEFORM
~
~
I"
/
ill
'" "
/
c
'"
~
-
,/
~
w
to
"
./
~>
«
:;«
'" "
ii:"
/
,/
".-
.",
,.../
2
4
IT(RMSI. RMS ON·STATE CURRENT IAMPI
ITiRMSI. RMS ON-STATE CURRENT (AMP)
7-221
•
14120
MT2
0----4,;~ G
0
MTl
TRIACS
15 AMPERES RMS
2OO~OO VOLTS
SILICON BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and military applications for
full wave control of ac loads in applications such as light dimmers,
power supplies, heating controls, motor controls, welding equipment
and power switching systems.
,
•
All Diffused and Glass Passivated Junctions for Greater Stability
•
Isolated Stud Package
• Gate Triggering Guaranteed In All 4 Quadrants
STYLE 1:
PIN I MAIN TERMINAL 1
1 GATE
3. MAIN TERMINAL 1
STUD ISOLATED
MAXIMUM RATINGS
•
Unit
Value
Symbol
Rating
Peak Repetitive Off·State Voltage 111
IT J ~ -65 to +100 oCI Gate Open
T4120B
0
M
Volts
VORM
I~-'I
<:>"7 j
U_
~
A
B
I
200
400
600
RMS On-State Current
(Conduction Angle ~ 360°C I TC = +750 C
Peak Non-Repetitive Surge Current
lOne Full Cycle. 60 Hzl
Circuit Fusing
ITIRMSI
15
Amp
ITSM
100
Amp
12 t
50
AI.,
...
ITC = -65 to +100 0 C. t = 1.25 to 10 msl
Peak Gate Power (Pulse Width = 1.0 }Js)
Average Gate Power
Peak Gate Trigger Current (Pulse Width - 1 .usl
Operating Case Temperature Range
Storage Temperature Range
PGM
16
Watts
PGIAV)
IGTM
0.5
Watt
4
Amp
TC
-i>5 to +100
T stg
-65 to +150
°c
°c
30
in. lb.
Stud Torque
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
I
Svmbol
ROJC
I
Max
I
1.1
Unit
°CIW
111 Ratinqs apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking cCtpability such that the voltage applied exceeds
the rated blocking voltage.
MILLIMETERS
MIN MAX
14.00 14.20
12.73 12.83
- 28.18
1.6& 4.08
8.48
2.18 2.41
10.81 11.58
K
9.78 10.54
L
8.99 1.15
N
8.48 8.91
1.81
ilL
1M
R
1.52 1.18
T
0.89 2.19
DIM
'A
8
C
F
G
H
J
-
INCHES
MIN MAX
0.551 0.559
0.501 0.506
1.030
0.085 0.1611
0.255
0.086 0.085
0.420 0.465
0.
.41
0.215 0.306
0.265 0.215
0.135 ; 0.160
0.080 0.010
0.035 0.085
-
CASE 235·02
7-222
T4120
ELECTRICAL CHARACTERISTICS (TC = 25°C. either polarity of MT2 to MTI voltage. unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IORM
-
-
2
mA
VTM
-
1.4
1.8
Volts
Peak Off-State Current Gate Open
Rated VORM @ TC = 100°C
Peak On-State Voltage
IT = 21 A Peak
Gate Trigger Current, Continuous de (1)
mA
IGT
Vo = 12 Vdc.RL = 30 Ohms
VMT2
VMT2
VMT2
VMT2
-
-
(+). VG (+); VMT2 H. VG H
(+). VG H; VMT2 H. VG 1+)
1+). VG 1+); VMT2 (-). VG 1_). TC = -65 0 C
(+). VG (-j: VMT2 (-). VG 1+). TC = -65 0 C
-
Gate Trigger Voltage, Continuous de (All Quadrants)
50
80
150
200
Volts
VGT
VD = 12 Vdc. RL =·30 Ohms
-
TC = 25°C
TC = -65°C
Vo = Rated VOROM. RL = 125 Ohms. TC = 100°C
-
0.2
Holding Current
2.5
4
rnA
IH
Vo = 12 Vdc. Gate Open
IT = 500 rnA
-
-
300
tgt
-
1.6
2.5
dv/dt(c)
2
10
-
TC = 25°C
TC = -65 0 C
Gate Controlled Turn-On Time
75
!lS
VO'= Rated VORM. ITM = 25 A Peak.
IGT = 160 mAo Rise Time = 0.1 ItS
Critical Rate-of-Rise of Commutation Voltage
Vllts
Rated VORM. IT(RMS) = 15 A.
Commutating di/dt = 8 Alms. Gate Unenergized. TC = 75°C
Critical Rate-of-Rise of Off-State Voltage
dv/dt
VII's
Rated VORM, Exponential Voltage Rise, Gate Open. TC:::: 100°C
T4120B
30
20
10
0
M
150
100
75
-
(1) All Voltage polarity reference to main terminal 1.
FIGURE 1 - CURRENT DERATING
1\
5
0
5
0
"-
FULL
W~VE SIN~SOIDAL
"-
'"
~
....
«
z
0
~
0
WAVE FORM
"-
'.
~
;::
;t
~
<5
L
MAXIMUML
5
;'
=
3!
~
l?
w
...... 1'-.
........
.....
0
'"
ill>
«
:;;
«
..............
.........
5
•
FIGURE 2 - POWER DISSIPATION
5
12
"
0:-
16
'T(RMS). RMS ON·STATE CURRENT (AMP)
5
~
,
V
~
V ~ICiL
L V
/. V
FULL WAVE SINJSOIOAL
WAVE FORM
r----
O~ ~
12
ITIRMS). ON-STATE CURRENT lAMP)
7-223
~
16
16400
16410
16420
MT20~MT1
I
TRIACS
40 AMPERES RMS
200-800 VOLTS
SILICON BIDIRECTIONAL TRIODE THYRISTORS
... designed primarily for industrial and military applications for the
control of ac loads in applications such as power supplies, heating
controls, motor controls, welding equipment and power switching
systems; or wherever full-wave, silicon gate controlled solid-state
devices are needed.
• Glass Passivated Junctions and Center Gate Fire
Press Fit Stud - T6400
• Stud
-T6410
STYLEl.
1. MTI
Isolated Stud - T6420
•
2.
Gate Triggering Guaranteed in All 4 Quadrants
,
T6400
PRESS FIT
CASE 310.01
~
MAXIMUM RATINGS
Rating
II
GATE
CASE.Mf2
Symbol
Value
Unit
Peak Repetitive OIl-8tate Voltage
(TJ = -65 to +11 OOC) Gate Open
T6400B, T6410B. T6420B
T6400D, T6410D, T6420D
T6400M, T6410M. T6420M
T6400N, T641 ON, T6420N
VDRM
On·State Current RMS
T C (Pressfill = 70°C
(Conduction Angle= 360 0 C)TC (Stud) = 650C
IT(RMS)
40
Amp
Peak Surge Current (Non·Repetitive)
(One Full Cycle. 60 Hz)
Circuit Fusing
(TJ = -65 to +1100 C, t = 1.25 to 10 ms)
'TSM
300
Amp
12 t
450
A 2s
Peak Gate Power
(Pulse Width = 10 I's)
PGM
40
Watts
PG(AV)
0.75
Watt
IGTM
12
Amp
TC
-65 to +110
°c
TS!9
-65 to +150
°c
-
30
in. lb.
Symbol
Max
Unit
ROJC
0.8
0.9
1.0
°C/W
Volts
Average Gate Power
Operating Temperature Range
Storage Temperature Range
Stud Torque
"-1
•
"
200
400
600
800
Peak Gate Current (Pulse Width = II's)
t~ [1
iT
~
..
L-.!=
STYlE 2
PIN I MTI
2. GATE
3MT2
T6410
STUD
CASE 263·03
L
, ..... UIlf.ZA
MIlliMETERS
DIll 111111
A lbl41560
...
n
34
40
2,29J1EF
"15.1511
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Pressfit
Stud
Isolated Stud
STYLE 2:
1. MTI
2. GATE
3. MT2
T6420
ISOLATED STUD
CASE 311.01
,a ,
343
7-224
I
1
T6400, T6410, T6420
ELECTRICAL CHARACTERISTICS ITe: 25 0 e unless otherwise noted)
Characteristic
Peak Off·State Current (Either Direction)
Rated VORM @TJ
=110°C, Gate Open
Maximum On-State Voltage (Either Direction)
Symbol
Min
Typ
Max
Unit
IORM
-
-
4
mA
VTM
-
1.5
2
Volts
IT: 100 A Peak
Gate Trigger Current. Continuous de (1)
mA
IGT
VO: 12 Vdc. RL ' 30 Ohms
VMT2
VMT2
VMT2
VMT2
-
1+). VGI+)
1+). VGI_)
1-). VGI_)
1-). VGI+)
-
-
-
VMT2 1+). VGI+); VMT2 I:"). VGI-)' Te: -65°C
VMT2 1+). VGI-F VMT21-). VGI+). Te: -65°C
Gate Trigger VQltage~ Continuous de
Holding Current IEither Oirectionl
Vo = 12 Vdc. Gate Open
Initiating Current:..: 500 mA
TC
TC
-
-
1.35
2.5
-
0.2
-
3.4
-
Volts
mA
= 200 rnA, Rise Time = 0.1
T e IPress!,t) . 70 0 e
-
25
60
-
lOa
tgt
-
1.7
3
"s
dv/dtlc)
-
5
-
Vips
= 2So e
= -OSoC
ps
Critical Rate of Rise of Commutation Voltage, On-State Conditions:
dl/dt = 22 Alms, Gate UrumtH~JilCd. Vo -" Rated VOROM.
=40 A.
125
240
-
IHO
Gate Controlled Turn-On Time
ITIRMS)
-
50
80
50
80
VGT
VO: 12 Vdc, RL: 30 Ohms. Te: 25 0 e
Te: -6Soe
Vo = Rated VORM, RL = 125 Ohms, TC = 110°C
Rated VORM. IT = 60 A, IGT
15
30
20
40
Te IStud)
=6So e
(1) All voltage polarity reference to main term mal 1.
fiGURE 2 - RMS CURRENT DERATING
fiGURE 1 - ON-STATE POWER OISSIPATION
~
0
z
0
Ii
0
>=
:;:
iii
0
~
w
o
'"f:j'"
>
0
CONDUCTION ANGLE
I
I
./ /"
~~1I0~~+---+---4---4---~---~---+---t---+---1
,..w
"'g~ 100~--+---+-~~~4----~--~---+---t---+---1
....
'"
~ ffi 90
~
::>~
:!~
x I- 80
"'w
TYPICAL
10
20
30
ITlRMS). FULL CYCLE RMS ON·STATE CURRENT lAMP)
120
.",
"''''
.='5
.....r./
I ~
a:
I
'" 0~'1
'"s
.//
/. ./
MAXIMUM
IBO·V.36O.
'" 0, +0111
0
//
/ /
/
OI~rrOlil
0
3:'"
/
CURRENT WAVEFORM' SINUSOIDAL
LOAD, RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE' 360.
70
60
50~0--~---1~0~~--~20~--L-~3~0---L---4tO'-~--~50
40
ITlRMS). RMS ON·STATE CURRENT lAMP)
7-225
•
16401
16411
16~21
TRIACS
30 AMPERES RMS
200-600 VOLTS
T6401
SILICON BIDIRECTIONAL TRIODE THYRISTORS
· .. designed primarily for industrial and military applications for
full wave control of ac loads in applications such as light dimmers.
power supplies. heating controls. motor controls. welding equipment
and power switching systems.
• Glass Passivated Junctions and Center Gate Geometry
• Isolated Stud Available for Ease of Assembly (T6421 Series)
• Gate Triggering Guaranteed In All 4 Modes
~
Hi/l=
~I
L 6
PRESS FIT
CASE 310-01
~
~
STYLE 2
I Mfl
2 GATE
CASE MT2
.,.
INCHES
MILLIMETERS
DIM MIN MAX
MAX
1213 1283 0501 0505
0.160
2.41 0 "
1.52
1.18 0.060 0.010
0300
'62
1050
2661
0610
1102
0055 0085
"6
"6
,
'"
14'
'16
T6fll
fl~
.'
B T
I i~
MAXIMUM RATINGS
Rating
•
Symbol
Repetitive Peak Off-5tate Voltage
(TJ = -65 to +1000 CI Gate Open
T6401B. T6411B, T6421B
T6401D, T6411D, T6421 0
T6401M,T6411M,T6421M
On-5tate Current RMS
(Conduction Angle = 3600 CI T C .. +650 C
Valua
Unit
200
400
600
IT(RMSI
PIN 1 MTI
I
STYlE2. •
!.~~E
,,'
30
IHM
Amp
300
Amp
12 t
450
A2s
PGM
40
Watts
PG(AVI
0.75
Watt
Peak Gate Current Pulse Width .. 1 /Lsi
IGM
TC
T st
2
-65 to +100
Amp
Operating Case Temperature Range
MILLIMETERS
MIN
MAX
A
10.6111.5
15.15 17.02
(Pulse Width = 1.0 /Lsi
I. 5RE
'2.83
1213
T6421
Average Gate Power
Storage Temperature Range
°c
in. lb.
Symbol
Max
Unit
R9JC
0,8
0.9
1.0
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Pressfit
Stud
Isolated Stud
lr~
ji~
°c
-65 to +150
30
Stud Torque
!
, STYLE2:
1 MTI
2. GATE
tF~~GK
C
•
l
3. MT2
j
Q.
T
l_~ -~ .••
ISOLATED STUD
CASE 311-01
7-226
INCHES
MAX
0.604
0.51
.•• ,
0614
.5
1050 1190
0.1350.160
0090REF
.16
STUD
CASE 263-03
(TJ = -65 to +1000 C, t = 1.25 to 10 msl ,
Peak Gate Power
15.34 15.60
1400 14.20
26.6130.23
343 406
2.29 REF
(One Full Cycle, 60 HzI
Circuit Fusing
; ____ <
1,1",,11
Volts
VDRM
ITSM
Peak Non-Repetitive Surge Current
211
'-A:"::...l
0. 5
0.501 0505
T6401, T6411, T6421
ELECTRICAL CHARACTERISTICS
(TC
= 2SoC, and
Either Polarity of MT2 to MT1, unless otherwise noted 1
Churactertstic
Peak Off-5tate Current
Vo = Rated VORM@TJ = 100o C, Gate Open
Maximum On~State Voltage (Eithsr Direction)
ITM : 100 A Peak
Gate Trigger Current, Continuous de (1)
Symbol
Min
Typ
Max
Unit
IORM
-
-
4
mA
VTM
-
2.1
2.5
Volts
-
20
35
50
80
-
1.35
2.5
-
mA
IGT
Vo = 1,2 Vdc, RL " 30 Ohms
VMT2 (+), VG(+I; VMT2H,vG(-1
VMT2 (+1, VG(_I; VMT2(-I,vG(+1
Gate Trigger Volt3ge. Continuous de. All Trigger Modes
VO: 12 Vdc, RL : 30 Ohms
Vo = Rated VORM, RL = 125 Ohms, TC
= 100°C
Holding Current
Vo = 12 Vdc, Gate Open
'T=150mA
Gate Controlled Turn~On Time
Vo
= Rated VORM,ITM =45 A, IGT: 200 mA, Ri.e Time-: 0.1 I'S
Critical Rate of Rise of Commutation Voltage. On-State Conditions:
dildt: 16 Alms, Gate Unenergized, Vo
Volts
,
VGT
-
0.2
-
IHO
-
-
60
mA
tgt
-
1.7
3
I'S
3
20
-
VII'S
dvldt(c)
= Rated VORM,
IT(RMSI : 30 A, T C : Rated Value from Figure 1
VII'S
dvldt
Critical Rate of Rise of Off-State Voltage·
Vo = Rated VORM, Exponential Rise, TC = 100°C
T6401 B, T6411 B, T6421 B
T64010, T64110, T6421 0
T6401M, T6411M, T6421M
-
-
40
25
20
FIGURE 2 - POWER DISSIPATION
FIGURE 1 - CURRENT DERATING
u
0
w
~
>-
~>-
r-
w
/
FULL WAVE
SINUSOIDAL
WAVEFORM
/
'"
;';
V'
w
0
0
:::>
u'
>-
/
TYPICAL
V-
V V
V V
/
~
i
.j
."""x
/
MAXIMUM
~
/
/' / '
)~ V
50
0
16
24
32
16
24
IT (RMS), ON-STATE CURRENT (AMP)
IT(RMSI, RMS ON-STATE CURRENT (AMP)
7-227
32
40
•
7-228
Leadforms, Hardware,
and Mounting Techniques
8-1
II
II
8-2
LEADFORM OPTIONS
Plastic packaged semiconductors may be leadfonned to a
variety of configurations for Insertion Into sockets and
boards designed for metal can devices. The following are
standard leadfonns offered by Motorola.
THYRISTOR AND TRIGGER LEADFORM OPTIONS
To order leadformed product, determine the form desired,
and specify case number and applicable lea~form number. A
special device title will be assigned by the factory to process
your order. Certain standard devices already incorporate a
leadform, and may be purchased without consulting the
factory.
Case 29
Lead Form 5
(TO·S2To FitTO·5)
1;~-
.J". /~
'U.tIRCLE~
L:>.~
rana
LOlA
Case 29
---r
. J'r
13"· $. . .
Lead Form IS
(TO·S2To FiITO·1S)
1"·'1
kg;]
E.
'~GSt)---~-~r
0511---
~--.i~
~"Tnl:'~:l ~
.!!.!.!!
j
--.i
e,!III
- - .L
0580
Lead Form 2
Lead Form 3
n
Surlltl
Moun'mg
(Metali
SurlllCl
~M,"",""U''''
m
~
Case 90
Lead Form 1
I
~~--=l
0540
Case 221
Lead Form 2
0605
m~::'
"'j'
~ Ll
MuT"
0.511
(MellI)
~
.
~,
r
Mounhng'Su.bll:1
--,;p-
Lead Form 4
-.l O~5S
L ~::-j
E!3@ ====p ~
'G,,,
L
'jj""j"W
054i
.
Case 221
Laad Form 4
=fi
'f~J:~~
LosDD
Q'-.
Su.face
0320
0150-J
0550
(Matal)
CaSen
Forms 11 and 21
U'
0385
Moo",".
(MII.I!
~ead
'.
0580
!I!tf:~
om I L~:L~;;;
n~0025R~T"'P
IMlta11
Lead Form 3
9.ill
~
--lI..-0093TYP
0060
~ t0205~'
fM:u~,,:gt
Case 77
Case 77
0375
--.l
!!!.2
1m ~~!~
.
'Casen
Load Form 1
l~l
J-""."
I==='="'l_
_;--r .~="""'_........
~~======':-
Case 77
't'
a 1110
I
~.-
~
Case 221
Lead Form 5
.. rD.",
~O.2DO:tDD'O
0i'i0
r
~t ~~O.05DmlXl
8-3
Case 221
Lead Form 6
•
PLASTIC POWER TRANSISTOR
LEADFORM OPTIONS
TO-128 (ca.. 77), TO-127 (Ca.. 90), TO-220 (Ca.. 221A)
Devices may be leadformed by first converting to a special
"SJE" number. The factory must be given the designation of
the package and the applicable leadform suffix letter. The
factory must be consulted.
TO-202 (DuDwaH)
Ca.. 152 (UnlwaH)
Any device in these packages may be leadformed by designating the proper suffix number after the device type called
out.
Example-To lead form an MPS-U01 into the TO-5 configuration, designate it as: MPS-U01-05.
T0126 Lead Forms
efi
~~tl or
10126-A
_J ~r
·-1~0.093T".
~rO'5°01
T
ET
.
C
30'
-I
Lo.093T".
1012~__;
~
0.391
__
0
~56
JJ
'I--~-0093rYp
_LL
~=T-T
0.366 05Jl
_ 0.316 0:481
1
MountInISurf.t.
•
0.100
MountingSurtace
•
10126-D
10126- E
~It
0.601
10126-F
0.706
~
0.507
0.677
*
I
--Il..-O.093 T".
E
!±
Min. MIL
-=r-r
,
J 1--0.0931".
E~
0.226
0.186
Mountins
Mountina:SIfffICl
SUrfict
8-4
0.607
0.467 0567
--.L
.
+
Plastic Power Transistor
leadform Options (continued)
T0127 Lead Forms
T
;;~A
~L
O.~07
10127 - B
t
J
0587 0.857
0837
I
t
-
-1I'~O 166
~
T0127 - C
0.597
0840
-1
IrH::l:--0B20
L,
iT!
I
0.205
Mm.
I
'r
"~
---I 1-•.
.~rr;r.:=t=:S
I ~ uU.
--
---I 1-
0.025R••. ,,,.
'
166
0166
0.025 Rad. TyP.
i-..'58~
L.""".'
t
Surflce
t--O.840~
Surface
Mountm,Surface
m.:9
4srrr.:==.E,0=25=R.=•. 3,yo
1'1 ~O.S701
0.590.1
MOl/hlml
0.697
III
1°·680
0.820
CASE 152·
UNIWATT
CASE 152 - 1
:::;
",::,
J. Collector
CASE 152 - 5
ITO - 5 Type)
0.240
0.Z80
I
•.
04.
321
---4-9~~
-TI
1 1
0.895 Typ.
,,:1"" j
0080
0.120
• .100 ,,,.
Betweell Leads
-1 'I
~
'I
•
0.065 Typ.--! _
:!:.
.100 .
0.020
~_1...
0.025
II ~:031R~
flat Typ.
---.,~
T0202·
DUOWATT
T0202 - 1
T0202 - 2
~
T0202 - 5
i
I
- t~95R'1 g:E
0.120 ReI.
-r-~-
0.810 Ref.
~
1r::~~
,:-..-:-',,-,-----,4-
Pian'! -=-
- 0 34;'0 390
0.100 Re'., 1 ] -
•
T0220
T0220 - A
T0220 - C
T0220 - B
IJEDEC T0220 - AA)
-,-
ITO - 5 Type)
0.620
..-L!
~ I
I
I
•.195
0.595
0.620
j
f
1.00 .".
, o.mC'-
0'380
~~
O.l77Typ.
_L
0.405
0237
0025 Rid. Typ.
0.2571
-,
.",,;,,,,S,,'ac.
0090
-l
~.19O
'- I
a 210
~8
. 38.-1WI
•. 100 ,,,.
Between Leads I
0.405
r
0.327
0 337
'0.575
11-0.605
~ 0.660
0.'9O-j'
0.210
.J L_
I
i
a
.>00
'==F---r-
'
0:110 ---,
I
lI
100 ,
O.
a
0.690
8-5
..J
OJ!O}IlL
0.57S
.L~:~ •. 545
0.\'.
:::--11-- I
0.090
__
Mounlln,Sur!acl
liP·
MOUNTING
HARDWARE
-TO-3
*NO. 6 SHEET METAL SCREWS
B51564FOO3
This hardware is applicable
to the following packages.
INSULATOR
(3 OPTIONS AVAILABLE)
MICA-B52600FOll
FIBERGLASS-B51OBOAOOI
ANODIZED ALUMINUMB51078AOOI
SEMICONDUCTOR
TO·3
CHASSIS OR
HEAT SINK
CASE
CASE
CASE
CASE
CASE
CASE
CASE
1 (TO·3)
3
11A
11 (TO·3)
12
54
197
• Longer screws (not available from Motorola) and multiple bushings may be required
f~r
•
thick chassis or heat sink .
DRAWINGS NOT
TO SCALE
--- -- -- - - MOUNT ON FRONT OF CHASSIS
/0
0
0
FRONT TEMPLATE
B'51087AOO1
MOUNT ON BACK OF CHASSIS
r-
'\
-- -- -- - 0...
/"0
0
--
0
,0
BACK TEMPLATE
B51087AOO2
0
0..1 "-0
8-6
0..1
,
MOUNTING HARDWARE TO-3
.-;. ...---,-O'c-' .1730
,
_0.655
-J
·1.600
0.003 TEFLON·COATED
FIBERGLASS INSULATOR
B51080AOOl
.020 ALUMINUM
If~SULATOR
B51078AOOl
.002 MICA
INSULATOR
B52600FOll
XP PHENOLIC.
VACUUM WAX
IMPREGNATED
BRASS,
--::? CADMIUM PLATED
0.0002 THK
·O±~lJ -~lfl~±~
L.177
±.003
OIA
NYLON INSULATING BUSHING
B51547FOO2
TRANSISTOR SOCKET
B51084AOOl
.-~
~
MAX
O'L
2.03·2.36
0.OBo.0.093J
I..
@
J
. ])
12.70± 0.79
0.500± 0.031
NO.6 SHEET METAL SCREW
B51564F003
- 9 00
._--------,
Moum ON FRONT OF CHASSIS
•
BACK TEMPLATE
B51087AOO2
FRONT TEMPLA TE
B51087AOOl
8-7
/187
MOUNTING
HARDWARE
TO-66
·NO.6SHEET
METAL SCREWS
B51564FOOJ
TO·66
(CASE 80)
--u~-
p
-B--
·c
II
MICA INSULATOR
B52600FOO8
·NYLON INSULATING
~~==~====~~~~~~[
BUSHING
B51547FOO2
,.
-t
t I
K
E
I
. SEATING PLANE
---F--
s
• Longer screws (not available from Motorola) and multiple bushings may be required for
thick chassis or heat sink.
•
MOUNT ON FRONT OF CHASSIS
o
MOUNT ON BACK OF CHASSIS
o o
o
o
o
a
o
'0
FRONT TEMPLATE
B54879COOl
o
(DRAWINGS NOT
TO SCALE)
a
MILLIMETERS
DIM MIN MAX
B 11.94 12.70
6.35 8.64
C
D
0.71 0.86
1.27 1.91
E
F 24.33 24.43
4,83 5.33
G
2.67
H 2.41
J 14.48 14.99
K
9.14
P
1.27
Q
3.86
3.61
S
8.89
T
3.68
U
- 15.75
-
INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
- 0.050
0.142 0.152
0.350
0.145
- 0.620
All JEDEC Dimensions and and Notes Apply.
CASE 80
(TO-66)
BACK TEMPLATE
B54879COO2
8-8
MOUNTING HARDWARE T0-66
L
0.275
"'-M
..
,--
2.03·2.36
0.080·0.093
~
___ _
-@-
]
I
12.70±. 0.79
0.500±. 0.031
1.340
NO.6 SHEET METAL SCREW
B51564F003
XP PHENOLIC
VACUUM WAX
IMPREGNATEO
.049 DIA
.043
(2 HOLES)
.156 ±.002 OIA
(2 HOLES)
.188 R TYP
0.005 MICA INSULATOR
852600F008
.100
±.015
0 •.003 MICA INSULATOR
B52600F009
BRASS
CADMIUM PLATED
.030 THK
5/32IN·---lU·
MAX
13/32 IN .
.112 CIA
(2 HOLES FOR
#4·40 SCREW)
.060 ±.005l
r·
r
143 ±.003 .
CIA
--.l
. -0'---
TRANSISTOR SOCKET
B54837COOl
.L.l77
+
±.003
.
DIA
NYLON INSULATING BUSHING
851547F002
.200
.210
0.855
Q.9ii5
------.120DIA~ .
'188DIA¢
.08 CIA
(2)
.188
DIA,
$.120DIA
BACK TEMPLATE
B54879C002
~-+
___ 1.075
1.ii95
FRONT TEMPLATE
B54879COOl
8-9
•
MOUNTING
HARDWARE
TO-126
~
1§f"
_ _ 4·40 HEX HEAD SCREW
B09489A030
~
/~
~
I
_ _ COMPRESSION WASHER
B52200F006
"SEMICONDUCTOR" _ _
TO-126
(CASE 77)
I
--•
®
ROUND MICA INSULATOR
B52600F003
HEATSINK OR CHASSIS
MILLIMETERS
DIM MIN MAX
A 10.80 11.05
7.49
7.75
B
2.41
2.67
C
0.51
0.66
D
2.92
3.18
F
2.31
2.46
G
1.27
2.41
H
0.38
0.64
J
K 15.11 16.64
3 TYP
M
Q
4.01
3.76
1.14
1.40
R
0.64
0.89
S
3.68
3.94
U
V
1.02
I
@
TORQUE REQUIREMENTS
O.SSN·m (6IN-LBS.) MAX.
INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
3D TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040
CASE 77·04
TO-126
8-10
-
MOUNTING HARDWARE TO-126
(DIMENSIONS
MILLIMETERS)
INCH
2.95·312
0.116·0.123
I
~
~
+
~
~
O.1,24QUNC28
0.241 0.250
.".J :..
[I I)
6.98·7.34
2.21-2.49
"m.
102127
Q.040·0 050
---r
4-40 HEX NUT
CARBON STEEL,
CADMIUM PLATED
B09490A005
S:reEL COMPRESSION WASHER
B52200F006
3.18·343
01250135
---r
~
~'241.S2
460 475
+
~
I
513 MIN
011240UNC2A
f------ ~24:~ ~25~~ - - - - - I
J
Y
,
OOO~~:~ ~~3
a
---
100490060
1
~
04'Or
SOO
!
4-40 HEX HEAD SCREW
CARBON STEEL,
CADMIUM PLATED
B094B9A003
ROUNO MICA INSULATOR
B52600FOO3
8-11
•
MOUNTING
HARDWARE
TO-127, CASE 90
Part numbers in this
Part numbers in this'
column for
column for
*HIGH VOLTAGE
INSULATED MOUNTING
INSULATED
MOUNTING
6-32 HEX HEAD SCREW
B094B9A031
'-
V
4·40 HEX HEAD SCREW
B09489A030
~
-""""1r"
~/
B
NYLON INSULATING BUSHING
(For 4-40 Screw)
B51547FOll
STEEL COMPRESSION WASHER ___
(For 6-32 Screw)
~
B52200FOO4
~
SEMICONDUCTOR
(CASE 90)
RECTANGULAR
MICA INSULATOR
B0560SAOOl
•
DIM
A
4-40
COMPRESSION WASHER
B52200F006
~ __
6-32 HEX HEAD NUT - - - - ~
4-40 HEX NUT
B09490AOO5
B09490AOO6
B
C
D
F
G
H
J
K
M
Q
R
TORQUE REQUIREMENTS
Insulated 0.68 N-m (S IN. LBS.) MAX
High Voltage Insulated 0.90 N·m (6 IN. LBS') MAX
• High voltage mounting requirements depend on use environment. User is encouraged
to make his own evaluation.
8-12
U
MILLIMETERS
MIN
MAX
16.13 16.38
12.57 12.83
3.18 3.43
1.09 1.24
3.51 3.76
4.22 esc
2.67 2.92
0.813 0.864
15.11 16.38
90 TYP
4.70 4.95
1.91 2.16
6.22 6.48
INCHES
MIN MAX
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 esc
0.105 0.115
0.032 0.034
0.595 0.645
90 TYP
0.185 0.195
0.075 0.085
0.245 0.255
CASE 90
(TO·127)
MOUNTING HARDWARE TO-127, CASE 90 '
OUTLINE DIMENSIONS
01 MENSIONS _ MI LLIMETER
INCH
3'71'3'81~
..~. J . ..,.~
~
•.,~- 1°..=.•, ""•.~
<==S
0411-0.050
0.265.0.275
0.323.0.33::.=1°. 045'0055
.
I@A
.~~;:::.~~\~.~
==o~
1.19·1.30
~_r·r··~·
U_
c=:=:s T
f
3.45·3.58
~
:y-
B -
-
----r
4 19432
0,
~C
[I J)
I
W
JI _~
0
;65~O: 170
STEEL COMPRESSION
WASHER
STEEL COMPRESSION
WASHER
NYLON INSULATING BUSHING
B52200F004
B52200F006
B51547FOll
HEX NUT
CARBON STEEL.
CADMIUM PLATED
E
~ ,.,,.~~
0.B02·0.B22
~lllJ
18.54·19.05
0.730·0.750
G
i
~
,--a~
1
M~V~-i
J
0.002-
I
0.003
r - - - 0.590·0.610 - j
14.99-15.49
1---0.05-0.08
=================,
N
.~
r0.002·0.003
-T
ROUND MICA INSULATOR
RECTANGULAR MICA INSULATOR
(See table below.!
(See table below.)
HEX HEAD SCREW
CARBON STEEL.
CADMIUM PLATED
DIMENSIONS - MILLIMETER (INCH)
•
RECTANGULAR MICA INSULATOR
ROUND MICA INSULATOR
PART NO.
DIME
PART NO.
DIMG
B52600F013
3.56·3.Bl (0.14CHl.150)
B056OBAOOI
3.6B·3.94 (0.145·0.155)
B52600F015
2.B7·2.97 (0.113-0.117)
B056OBA002
2.B7-3.00 (0.113·0.11B)
HEX NUT
DIMA
DIMB
DIMe
DIMD
6.12·6.35 (0.241·0.2501
6.98·7.34 (0.275-0.2891
2.21·2.49 (0.087·0.09BI
2.84 NOM (0.112 NOMI
7.67·7.92 (0.302·0.3121
8.74·9.17 (0.344·0.3611
2.59-2.90 (0.102·0.1141
3.50 NOM (0.138 NOMI
HEX HEAD SCREW
DIMN
DIMP
DIMQ
DIMR
11.94·12.1010.410·0.5001
1.24·1.5210.049·0.0601
5.13 MIN 10.202 MINI
4.61).4.1510. lBl·0.1871
11.94·12.1010.470·0.5001
2.03·2.3610.061).0.0931
6.91 MIN 10.212 MINI
6.211-6.3510.244-0.2501
8-13
MOUNTING
HARDWARE
TO-220AB
PREFERRED ARRANGEMENT
for Isolated or Non·ilDlated
ALTERNATE ARRANGEMENT
for IsoletlCl Mounting
when Screw must be at
Heat·Sink Potential.
4-40 Hardware is U.....
Mounting. krew is at Semiconductor Ca. Pot.nti.l~ .
6·32 Hardware is U .....
Chooll from Pa ... Listed
...
U.. Parts Listed 801_.
Below. . . .
. y:::::.----:-
6-32 HEX HEAD SCREW
B09489A035
~
4-40 HEX HEAD SCREW
B09489A034
'.
R
~J
II
MILLIMETERS
DIM
A
I
./ NYLON INSULATING BUSHING
i . ./
~
I
111 RECTANGULAR STEEL
WASHER
B09002AOOI
.
I
B51547F015
I
~[I=:r:::::=:::::::::J
.
n
A
I
/
SEMICONDUCTOR \ :
(CASE 221. 221A)
"-
N
SEMICONDUCTOR
(CASE 221. 221M
>
I
c:::::::::~~_~
MIN MAX
14-23 15-87
10.66
3. 6 4-82
0.51
'-14
31 3.733
.29 V9
.35
.1 '-14
12.7 14.27
4 177
4.3 5.33
4 3.04
2.04 2.92
1.39
5.B5 US
INCHES
MIN
0.560
0.380
0.140
0.020
0.139
0.090
0.625
0.420
0-190
0.045
0.147
0.110
0.250
0.045
0.562
0070
0.210
0.120
0.012
0.500
0045
0.190
0.100
D.DBD 0.115
0.020 DOSS
0.230 0.270
CASE 22HJ.2
TO·220AB
All JEOEC dImenSions and
H
I'I-H,L
Dj~EG
nOles applV
(21 RECTANGULAR MICA
INSULATOR,
IC:I:==:;====I:============~
BOBB53AOOI
HEAT SINK
"-?,.----,
(21 NYLON BUSHING
B51547FOO5
,
•
'------'It,
HEAT SINK
'-.....r-~:.......--,
~
(31 FLAT WASHER
B51567F036.
(41 COMPRESSION
LOCK WASHER
B62200F004
6-32 HEX NUT
B09490AOO6
' " RECTANGULAR
MICA INSULATOR
B08853AOOI
:
~
~
COMPRESSION WASHER
B52200FOO5
/
_____
. _ _ 4-40 HEX NUT
B09490A005
~
('J:,.--'---rX--')
U.ed with thin challis and/or large hOle.
(2) U..d when Ilo'atlon J. required.
(3) Required when nylon bushing and lock wa.har are us.d.
(4) ComprH.lon wa.har preferred when plastic Insulating
(1)
material I, u••d.
TORQUE REQUIREMENTS
Insul.ted 0.6B N·M (6 In·lbo) m ••
MILLIMETERS
DIM MIN MAX
A 15.11 15.75
9.65 10.29
8
4.82
C 4.06
0.84
0
0.89
f
3.61
3.73
G
2.41
2.67
H
2.79
3.30
J
0.36
0.56
K 12.70 14.27
1.14
L
1.27
N
4.83
5.33
n 2.54 3.04
R
2.04
2.79
S
1.14
1.39
T
5.97
6.41
U
0.76
1.27
1.14
V
INCHES
MIN MAX
0.595 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.130
0.014 0.022
0.500 0.562
0.845 0.050
0.190 0.210
0.100 0.120
D.08O 0.110
0.845 0.055
0.235 0.255
0.0 0 0.050
0.045
CASE 221A-02
TI).220AB
Nonlnlulatad 0.9 N-M (8 In-lba) max.
8-14
MOUNTING HARDWARE TO-220AB
(DIMENSION _ MILLIMETER)
INCH
MICA INSULATOR
BOB853AOOI
3.05·3.28
031~~~'~~O@L
-- .
I
;'
•
-
I
8.20-846
1- 0323
I
I
I
o.i:l:i-'
1.14-1.40
100450055
I ....=:==-;s-I- T
~
~
9.53·10.0
147·1 57
~~
13 B4·14.10
0545·0555
~
L~~
0.375.0.39~
----==-=s
I
14.60·14.86
0.575·0.585
"11.14.1.40
0.045·0.055
STEEL COMPRESSION
WASHER
B52200F005
STEEL COMPRESSION
WASHER
483·533
0190·0.210
0.05·00B
21 OB·21 59
0.B30·0 850
B52200F004
~OOO2.0003
---~=-,
HEX HEAD SCREW
CARBON STEE L
CADMIUM·PLATED
(See table below,)
HEX NUT
CARBON STEEL
CADMIUM·PLATED
(See table below.)
K
E§J
NYLON
INSULATING BUSHING
(See table below.)
3 58-3 68
00"""
~ ~~
+
f~
11__
•.••. "
10.16-1 0.41
0.400·0.410
Iii
[I
f
N
RECTANGULAR
STEEL WASHER
B09002AOOI
.
LiI'-M
0.215-0 225
~
I
.
1.52·1.62
0.OSQ.0.OS4
t
DIMENSIONS - MILLIMETER (INCH)
NYLON BUSHING
PART NO.
DIMA
B51547FOO5
9.40-9.65
(0.370-0.380)
3.84-4.09
(0.151-0.1611
2.16-2.41
(0.085-0.095
B51547F015
5.59-6.10
(0.22P.0.2401
3.05-3.15
10.120-0.1241
1.57-1.68
10.062-0.0661
DIMB
DIMe
DIMD
DIME
6.10-6.35
(0.240-0.2501
1.02-1.27
(0.040-0.0501
3.56-3.66
10.140-0.1441
0.51-0.64
10.020.0.0251
HEX NUT
TYPE
PART NO.
DIMG
DIMH
DIMJ
DIMK
4·40
B09490AOO5
6.12·63510.241·0.2501
6.98·7.34 10.275·02891
2.21·2.4910.087·0.0981
2.84 NOM 10 112 NOMI
6·32
B09490A006
767·7.9210302·03121
8 74·9.17 10344·0.361 I
2.59·2.9010.1020.1141
350 NOM 10.138 NOMI
HEX HEAO SCREW
TYPE
PART NO.
DIMM·
DIMN
DIMP
DIMQ
DIMR
4-40
B09489A034
0.112·40
1.5710.621
1.24·1.52 10.049-0.0601
5.13 MIN 10.202 MINI
4.60·4.7510181-01871
6-32
B09489A035
0.138·32
1.5710.621
2 OJ·2.36 10.08Q.0.0931
6.91 MIN 10.272 MINI
6.2Q.6.35 10 244·0.2501
~15
•
AN-778
MOUNTING TECHNIQUES FOR
POWER SEMICONDUCTORS
In many situations the case of the seiniconductor must
be isolated electrically from its mounting surface. The
isolation material is, to some extent, a thermal isolator
as well, which raises junction operating temperatures. In
addition, the possibility of arc-over problems is introduced if high voltages are being handled. Electrical
isolation thus places additional demands upon the
mounting procedure.
Proper mounting procedures necessitate attention
to the following areas:
I. Mounting surface preparation,
2. Application of thermal compounds,
3. Installation of the insulator,
4. Fastening of the assembly, and
5. Lead bending and soldering.
In this note, the procedures are discussed in general
terms. Specific details for each class of packages are
given in the figures and in Table 1. Appendix A contains
a brief review of thermal resistance concepts, and
Appendix B lists sources of supply for accessories.
Motorola supplies hardware for all power packages. It is
detailed on separate data sheets for each package type.
INTRODUCTION
Current and power ratings of semiconductors are
inseparably linked to their thermal environment. Except
for lead-mounted parts used at low 'currents, a heat
exchanger is required to prevent the junction temperature
from exceeding its rated limit, thereby running the risk
of a high failure rate. Furthermore, semiconductorindustry field history indicates that the failure rate of
most silicon semiconductors decreases approximately
by one half for a decrease in junction temperature from
1600 C to 135 0 C.*
Many failures or' power semiconductors can be traced
to faulty mounting procedures. With metal packaged
devices, faulty mounting generally causes unnecessarily
high junctjon temperature, resulting in reduced component lifetime, although mechanical damage has
occurred on occasion from mounting'securely to a warped
surface. ,With the widespread use of various plastic'
packaged semiconductors, the dimension of mechanical
damage becomes very significant.
'
Figure I shows an example of'doing nearly everything
wrong. In this instance, the device to be victimized is
in the TO-220 package. The leads are bent to fit into
a socket-an operation which, if not properly done, can
crack the package, break the bonding wires, or crack the
die; The package is fastened with a sheet-metal screw
through a 1/4"-hole containing a fiber-insulating sleeve.
!he force used to tighten the screw pulls the package
mto the hole, causing enough distortion to crack the die.
Even if the die were not cracked, the contact area is small
because of the area consumed by the large hole and the
~owing of the package; the result is' a much higher
JunctIOn temperature than expected. If a rough heat sink
surface and some burrs around. the hole are present,
many-but unfortunately not all-poor mounting practices
are covered.
MOUNTING SURFACE PREPARATION
In general, the heat-sink mounting surface should have
a flatness and finish comparable to that of the semiconductor package. In lower power applications, the
heat-sink sllrface is satisfactory if it appears flat against
a straight edge and is free from deep scratches. In highpower applications, a more detailed examination of the
'
surface is required.
Surface Flatness
Surface flatness is determined by comparing the
variance in height (t.h) of the test specimen to that of
a reference standard as indicated in Figure 2. Flatness is
normally specified as a fraction of the Total Indicator
R~ading (TIR). The mounting surface flatness, i.e.,
t.h/TIR, is satisfactory in most cases if less than 4 mils per
inch, which is normal for extruded aluminum-although
disc type devices usually require 1 mil per inch.
•
Surface Finish
Surface finish is the average of the deviations both
above and below the mean value of surface height. For
minin1um interface resistance, a finish in the range of 50
to 60 micro inches is satisfactory;* a finer finish is costly
to achieve and does not significantly lower contact
resistance. Most commercially available cast or extruded
FIGURE 1 - Extreme Ca.e of Improperly Mounting
A Semiconductor CDistonion Exaggerated)
* See MIL-Handbook-217B, Section 2.2
*Tests run by Thermalloy (Catalog #74-INS-3, page 14)
using a copper TO-3 package with a typical 32-microinch
finish, showed that finishes between 16 and 64 Jj-in
caused less than ± 2.5% difference in interface thermal
resistance.
8-16
AN-778
TIR = Total Indicator Reading
Reference Piece
Device Mounting Area
FIGURE 2 - Surface Flatness
Another treated aluminum finish is iridite, or chromate·
acid dip, which offers low resistance because of its thin
surface, yet has good electrical properties because it
resists .oxidation. It need only be cleaned of the oils and
films that collect in the manufacture and storage of the
sinks, a practice which should be applied to all heat sinks.
For economy, paint is sometimes used for sinks; removal
of the paint where the semiconductor is attached is
usually reqUired because of paint's high thermal resistance.
However, when it is necessary to insulate the semi·
conductor package from, the heat sink, anodized or
painted surfaces may be more effective than other
insulating materials which tend to creep (i.e., they flow),
thereby reducing contact pressure.
It is also necessary that the surface be free from all
foreign material, film, and oxide (freshly bared aluminum
forms an oxide layer in a few seconds). Unless used
immediately after machining, it is a good practice to
polish the mounting area with No. 000 steel wool,
followed by an acetone or alcohol rinse. Thermal grease
should be immediately applied thereafter and the semi·
conductor attached as the grease readily collects dust
and metal particles.
heat sinks will require spotfacing when used in high·
power applications. In general, milled or machined
surfaces are satisfactory if prepared with tools in good
working condition.
Mounting holes generally should only be large enough
to allow clearance of the fastener. The larger packages
having mounting holes removed from the semiconductor
die location, such as a TO·3, may successfully be used
with larger holes to accommodate an insulating bushing,
but Thermopad plastic packages are intolerant of this
condition. For these packages, a smaller screw size must
be used such that the hole for the bushing does not
exceed the hole in the package ..
Punched mounting holes have been a source of trouble
because if not properly done, the area around a punched
hole is depressed in the process. This "crater" in the heat
sink around the mounting hole can cause two problems.
The device can be damaged by distortion of the package
as the mounting pressure attempts to conform it to the
shape of the heat·sink indentation, or the device may only
bridge the crater and leave a significant percentage of
its heat·dissipating surface out of contact with the heat
sink. The first effect may often be detected immediately
by visual cracks in the package (if plastic), but usually
an u~natural stress is imposed, which results in an early·
life failure. The second effect results in hotter operation
and is not manifested until much later.
Although punched holes are seldom acceptable in the
relatively thick material used for extruded aluminum heat
sinks, several manufacturers are capable of properly
utilizing the capabilities inherent in both fine·edge
blanking or sheared·through holes when applied to sheet
metal as commonly used for stamped heat sinks. The
holes are pierced using Class A progressive dies mounted
on four·post die sets equipped with proper pressure pads
and holding fixtures.
When mounting holes are drilled, a general practice
with extruded aluminum, surface cleanup is important.
Chamfers must be avoided because they reduce heat
transfer surface and increase mounting stress. The edges
should be broken to remove burrs which cause poor
contact between device and heat sink and may puncture
isolation material.
Many aluminum heat sinks are black·anodized to
improve radiation ability and prevent corrosion.
Anodizing results ih significant electrical but negligible
thermal insulation. It need only be removed from the
mounting area ,when electrical contact is required.
THERMAL COMPOUNDS
'To improve contacts, thermal joint compounds or
greases are used to fill air voids between all mating surfaces .
Values of thermal resistivity vary from 0.1 0 degrees
Celsius·inches per watt, for copper film to 12000 C·in/W
for air, whereas satisfactory' joint compounds will have
a resistivity of approximately 60 0 C·in/W. Therefore, the
voids, scratches, and imperfections which are filled with
a joint compound, will have a thermal resistance of about
1/20th of the original value which makes a significant
reduction in th'e overall interface thermal resistance.
Joint compounds are a formulation of fine zinc particles
in a silicon oil which main tains a grease·like consistency
with time and temperature. Since some of these com·
pounds do not spread well, they should be evenly applied
in' a very thin layer using a spatula or Iintless brush, and
wiped lightly to remove excess material. Some cyclic
rotation of the package will help the compound spread
evenly over the entire contact area. ,Experience will
indicate whether the quantity is sufficient, as excess will
appear around the edges of the contact area. To prevent
accumulation of airborne particulate matter, excess
8-17
••
AN-778
compound should be wiped away using a cloth moistened
with acetone or alcohol. These solvents should not contact
plastic-encapsulated devices, as they may enter the
package and cause a leakage path or carry in substances
which might attack the assembly.
Data showing the effeci of compounds on several
package types under different mounting conditions is
shown in Table I. The rougher the surface, the more
valuable the grease becomes in lowering contact resistance; therefore, when mica insulating washers are used,
use of grease is generally mandatory. The joint compound
also improves the breakdown rating of the insulator and
is therefore highly desirable despite the handling problems
created by its affinity for foreign matter. Some sources
of supply for joint compounds are shown in Appendix B.
Some users and heat-smk manufacturers prefer not
to use compounds. This necessitates use of a heat sink
with lower thermal resistance which imposes additional
cost, but which may be inconsequential when low power
is being handled. Others design on the basis of not using
grease, but apply it as an added safety factor, so that
if improperly applied, operating temperatures will not
exceed the design values.
TABLE I
Approximate Values for Interface Thermal Resistance and Other Package Data
(See Table II for Ca'SB Number to JEDEC Outline Cross-Reference)
Drv l",tmf'ace values are subject to wide variation because of 8l
i1l
f
/
16 0
1/
/
/
FASTENING TECHNIQUES
TO·126
Each of the various types of packages in use requires
different fastening techniques. Details pertaining to each
type are discussed in following sections. Some general
considerations follow.
To prevent galvanic action from occurring when devices
are used on aluminum heat sinks in a corrosive
atmosphere, many devices are nickel- or gold-plated.
Consequently, precautions must be taken not to mar
the finish.
Manufacturers which proVide heat sinks for general use
and other associated hardware are listed in Appendix B.
Manufacturer's catalogs should be consulted to obtain
more detailed information. Motorola also has mounting
hardware available for a number of different packages.
Consult the Hardware Data Sheet for dimensions of
the components and part numbers.
Specific fastening techniques are discussed in the
remainder of this note for the follOWing categories of
semiconductor pa9kage.
I. Stud mount: 00-4, 00-5, 00-9, 00-30, TO-59.
T0-60/63, TO-83, TO-93/94, etc.
2. Flange mount: 00-43, 00-44, TO-3, TO-37,
T0-41, TO-53, TO-66, etc.
3. Pressfit: 00-21, DO-24, TO-203
4. Disc: 00-200 and TO-200 Families
5. Thermopad®: TO-I 26/7
6. Thermowatt®: TO-220 Family
7. Tab Mount (Duowau® and Uniwatt®): TO-202
Family
8. RF Stripline: TO-119/121. TO-I 28/9, TO-216
l---
/
120
I
o .1/
/I
0"
1
o
o
20
40
60
80
100
DEFLECTION OF WASHER DURING MOUNTING (%)
FIGURE 5 - Characteristics of the Bell Compression
Washers Designed for Use with Thermopad Semiconductors
Machine Screws
Machine screws and nuts form a trouble-free fastener
system for all types of packages which have mounting
holes. Torque ratings apply when dry; therefore, care
must be exercised when using thermal grease to prevent it
from getting on the threads as inconsistent torque
readings resul t. Machine screw heads should not directly
contact the surface of any of the Thermopad plastic
package types as the screw heads are not sufficiently flat
to provide properly distributed force.
Self-Tapping Screws
Under some conditions, sheet-metal screws are
acceptable. However, during the tapping process with a
standard screw, a volcano-like protrusion will develop in
the metal being threaded; a very unsatisfactory surface
"Trademark E. I. DuPont
8-21
•
AN-778
Stud Mount
Flange Mount
Few known mounting difficulties exist. with this type
of package. The rugged base and distance between die
and mounting holes combine to make it extremely
difficult to cause any warpage unless mounted on a
surface which is badly bowed or unless one side is
tightened excessively before the other screw is started.
A typical mounting installation is shown in Figure 7.
Machine screws, self·tapping screws, eyelets, or rivets
may be used to secure the package.
Mounting errors with stud·mounted parts are generally
confined to application of excessive torque or tapping the
stud into a threaded heat·sink hole. Both these practices
may cause a warpage of the hex base which may crack
the semiconductor die. The best fastening method is to
use a nut and washer; the details are shown in Figure 6.
o
No.6 Sheet Metel Screwl
I
@_
MicaWa,her
~_T.flon
Bushing
I
"."'".-~
I
@_MiceW8Iher
@-,., ...,-~,
I
I
•
~_~~T~;""
FIGU RE 7 -
Mounting~ Details for
Flat·BaM Mounted
Semiconductor. CTO-3 Shownl.
When not using'! a socket, machine screws tightened to
their torque limits will produce lowest thermal resistance.
Press Fit
For most applications, the press·fit case should be
mounted according to the instructions shown in Figure 8.
A special fixture meeting the necessary requirements
is a must.
Disc
. Disc type devices also require special handling. The
details are shown in Figure 9.
FIGURE 6 - Mounting Ootail.
For Stud-Mounted Semiconductors
8-22
AN·778
Shoulder Ring
~
.501
1
-1.24
T
-
.505 01.
.01
I·
·1 /
~
I
j~.OI Nom.
i :W-~omV
The hole edge must be chamfered as shown to pr.vent shearing
off the knurled edge of the case during press-in. The pressing force
should be applied evenlv on tho shoulder ring to avoid tilting
or canting of the case in the hole during thll pressing operation,
Also, the use of a thermal joint compound will be of cunslderable
aid. The pressing force will VIUY from 250 to 1000 pounds,
depending upon the heat-sink matarial. Recommended hardnessas
Heat Sink,
'fit/6@;%%?£
®%'%;@
r-
--i
0.0499 ± 0.001 Ola.
Heat Sink Mounting
Rlv." "'\
.
~
~
~
~llIIlIlIIr~ "
Intimate
Contact Ar..
Additional
/HeatSinkPlate
Complete
Knurl Contact
are: copper-Isss than 50 on the Rockwell F scale; aluminum-less
than 6& on the Brinell scale. A heat sink as thin as l/S" may be
used, but thE:. interfac6 thermal reSistance will inCreS$8 in direct
proportion to the contact area. A thin chassis requires the addition
of a backup plate.
Thin Chassis
Ar ..
Thin-Chassis Mounting
FIGURE 8 - Mounting Details for
P,ass~Fit
Semiconductors
•
A self.levellng type mounting clamp is recommended to assure
parallelism and even distribution of pressure on each contact area.
A swivel type clamp or 8 narrow leaf spring In contact with the
heat dissipator provides acceptable performance.
The clamping force should be applied smooth Iv. evenly. and
perpel"ldlcularly to the semiconductor package to prevent defor-
mation of the device or the heat·dissipator mounting surfaces
during Installation. The spring used should provide 8 mounting
force within the range recommended by the semiconductor manufacturar; clamping forces usually range fro,,' SOD to 2000 pounds
force depending upon the type number.
Installation of an assembly of disc-tYpe semiconductors
mounted between two heat dissipator, should be done In 8 manner
to permit one heat dissipator to move with respect to the other_
MO\lement' will al,lOld stresses baing developed due to thermal
expansion, which could damage the semiconduetor.
Similarly, when two or more devictls art' to be operated elec·
trically in parallel, one of the heat dissipators used may ba
common to all devices, Individual haut disslpators must be provided against the other mounting sUlfocos. of the semiconductors
$0 that tne mounting force applied in each case will be
independently adjustable.
FIGURE 9 - Mounting Details for
8-23
Disc~Type
Semiconductors
AN-778
Thennopad
Several types of fasteners may be used to secure the
Thermopad package; machine screws, eyelets, or clips
are preferred. With screws or eyelets, a bell compression
washer should be used which applies the proper force
to the package over a fairly wide range of deflection.
Screws should not be tightened with any type of airdriven torque gun or eqUipment which may cause high
impact. Characteristics of the recommended washers
are shown in Figure 5.
Figure 10 shows details of mounting TO,126 or
TO-127 devices. Use of the clip requires that caution be
exercised to insure that adequate mounting force is
applied. When electrical isolation is required, a bushing
inside the mounting hole will insure that the screw threads
do not contact the metal base.
The Motorola Thermopad® plastic power packages
have been designed to feature minimum size with no
compromise in thermal resistance. This is accomplished
by die·bonding the silicon chip on one side of a thin
copper sheet; the opposite side is exposed as a mounting
surface. The copper sheet has a hole for mounting, i.e.,
plastic is molded enveloping the chip but leaving the
mounting hole open. The benefits of this construction
are obtained at the expense of a requirement that strict,
attention be paid to the mounting procedure. Success
in mounting Thermopad devices depends largely upon
using a compression washer which provides a controlJable
pressure across a large bearing surface. Having a small hole
with no chamfer and a flat, burr-free, well-finished heat
sink are also important requirements.
t1---
Machine Screw or
Sheet Metal Screw
Compression Washer .
Eyelet
Compression Washer
Thermopad Package
Mica Washer (OPtional)
Spring Lock Washer
Machine or Speed
Nut
(8) Machine Screw Mounting
(bl Eyelet Mounting
~
~
Part C52825·011
PartsC50272·Q11 and C51451-0"
Material: Heat-Treated Spring
_-=___....-5_te_e_1,:o_,O_'_"...,ThiCkness
•
Material: Heat-Treated Spring
Steel 0.011 Thickness
~04~O.056
o'~""pi.1
tIS',
7
Panel
Range
-0.480
TO-127 Clip
TO-126 Clip
(cl Tinnorman Clips (Eaton Corp.1
FIGURE 10 - Recommended Mounting Arrangements for TO-I26 and TO-127 Thermopad Package.
8-24
AN-778
The case 199 Thermopad is not more tolerant of
mounting conditions than Case 77 or 90 parts even
though the fastener does not bear on the plastic. The
screw must not contact the semiconductor base plate
as screw heads are not flat enough to apply pressure evenly
and may cause warpage of the base plate resulting in die
fracture. Procedures for mounting the Case 199 are
shown in Figure II.
6·32
Machine Screw
the plastic body during the driving operation. Such
contact can result in damage to the plastic body and
internal deVice connections. To minimize this problem,
Motorola TO-220 packages have a chamfer on' one end.
TO-220 packages of other manufacturers may need
a spacer or combination spacer and isolation bushing
to raise the screw head above the top surface of the plastic.
In situations where the Thermowatt package is making
direct contact with the heat sink, an eyelet may be used,
provided sharp blows or impact shock is avoided.
V
~~
==== __ Washer
Flat
Thermopad ~ -
Cas. 199
r'....--_ _ _, -_ _ _,
l. ______ J
f=
Compression --~
__
b) Alternate Arrangement
for Isolated Mounting
whon Screw must be at
Heat-Sink Potential.
4-40 Hardware is Used.
Choose from Parts Listed
Below.
Use Parts Listed Below.
.. S!jf-_ _
Heat Sink ---JL_ _....L......L._ _ _ _ _ _....
Washer
a) Preferred Arrangement
for Isolated or Non-isolated
Mounting. Screw is at Semiconductor Case Potential.
6-32 Hardware is Used.
CIIJ
6-32 Nut
(8) Machine Screw Mounting with Compression Washer
Compression Washer
10r6-32 Screw
II /"
--------~
~
----'1==
.
Nylon Isolation Bushing ____ rl
- ~~--...,
l ____ J
Thermopad Cas. 199
•
4.40 Hex Head Screw
6-32 Hex.../'
Head Screw
c:::::::z::::::
Insulating Washer IOPtionlll.---"'r
_ _r-,-__-:__
Nylon Insulating Bushing
lllf
(1) Rectangular Steel!
~
Semiconductor
\1
Weshe,
n~2:2:'A=)==:: : :>
:L-J..!- - - - - -....
Heat Sink ---1L_ _ _
Semiconductor
(Case 221, 221 A)
(b) Preferred Mounting Method, Required When Isolation Is
Needed. Machine Screw, Flat Washer and Nut, Sheet Metal
Screw and Speed Nut, or Eyelet May Be Used for Fasteners
'\
::
(2)Rectangular Mica
Insulator
FIGURE 11 - Various Mounting Schemes
For the Case 199 Thermopad
"-
Heat Sink
(al shows direct contact with heat sink.
Rectangu lar
Mica Insulator
(b) shows technique when isolation is required.
Manual Assembly Should Be Used.
(2)Nylon Bushing
~'--~. . . . . . i_L,
..
Thennowatt®
The popular TO-220 Thermowatt® package also
requires attention to mounting details. Figure 12 shows
suggested mounting arrangements and haraware. The
rectangular washer shown in Figure 12a is used to minimize
distortion of the mounting flange; excessive distortion
could cause damage to the semiconductor chip. Use of the
washer is only important when the size of the mounting
hole exceeds 0.140 inch (6-32 clearance). Larger holes
are needed to accommodate insulating bushings when the
screw is electrically connected to the case; however, the
holes should not be larger than necessary to provide
hardware clearance and should never exceed a diameter
of 0.250 inch. Flange distortion is also possible if excessive
torque is used during mounting. A maximum torque of
8 inch-pounds is suggested when using a 6-32 screw.
Care should be exercised to assure that the tool used
to drive the mounting screw never comes in contact with
"-
Heat Sink
(3) Flat Washer
(4) compres:·"o=n.=====>
or Lock Washer
. . . .\~~::,;.::,=(7
.
6-32 Hex Nut
. / Compression Washer
./
_ _ _ _ _ _ 4-40 Hex Nut
. . . . (;;: J)
(1)
(2)
(3)
(4)
Used with thin chassis and/or large hole.
Used when isolation is required_
Required when nylon bushing and lock washer are used.
Compression washer preferred when plastic insulating
material is used.
TqRQUE REQUIREMENTS
Insulated 0.68 N-M (6 in-Ibs) max
Noninsylated 0.9 N-M (8 in-Ibs) max
FIGURE 12 - Mounting Arrangements for Thermowatt Packages
8-25
•
AN-778
Note that th~ radius of the fillet must be small enough to
allow the tab to lie flat on the heat sink. To utilize an
existing chassis and board arrangement on heat sinking.
it may be necessary to have the device lie flat on the
chassis. In this case, the chassis mounting blocks shown
in Figure i3d might be utilized. A possible application
is shown in Figure 13e, where a complementary transistor pair is used. Insulated screws and mica insulating
washers under the blocks must be used to prevent·
shorting of the collector circuits of the two transistors.
Alternately, an insulated bushing and a #3 screw could
be used to secure the packages.
To avoid the use of mounting blocks, a tab-forming
option is available. Alternately, some eqUipment manufacturers have constructed heat sinks with a flat, raised
island to permit the package to be flat. Users should
not attempt to bend the tab as a cracked die is the
probable result.
Tab Mount
Although the Duowatt® and Uniwatt® packages are
designed primarily for use in low-power applications
where heat sinks are not required, they can be used
to dissipate up to 10 watts if properly mounted to a heat
sink. These _ packages are relatively rugged, since the
mounting hole is not close to the die; mounting stresses,
theref!)re, are not easily transmitted to the die.
Figure I3 shows some possible mounting arrangements.
An axial load of 300 Ibs-force produces minimum contact
thermal resistance. This is achieved at 6 in-lhs when a
440 machine screw is used. A sheet-metal screw and
speed-nut can be substituted for the machine screw
and nut, but torque readings are uncertain. The riveting
technique should produce 300 lbs-force, using a gradually
increasing pressure such as provided by an arbor press.
The extrusion requires a punch press to manufacture;
however, it is potentially the least expensive technique.
H
~
~
, .:::-.ri
~
L
'-I...........
W
D. Chassis Mounting Block Details
Block Dimensions
H
W
Duowatt
Unill'iatt
•
0.140
0.113
0.4
0.3
T
L
B", Rivet
0.5
0.3
Low
Block
High
Block
0.07
0.06
0.12
0.12
t
~
~
Cj'CUit
Emitter
L./ad~
C. Extrusion, Used as Rivet
Board
~
~
~:~k
E. Chassis Mount Block, Mounting Details
Use Nylon Screws and Mica Insulating Washer to Prevent
Shorting the Tabs to the Chassis, and Thus to Each Other.
FIGURE 13 - Methods of Mounting Duowatt and Uniwatt Transistors to a Heat Sink
8-26
AN-778
R.F. Stripline
under the types of loads encountered when the mounting
screws are tightened, permanent deformation of the flange
may result. Corrective action after the flange has been
bent will not necessarily insure proper thermal contact
with the heat sink.
The flang~ surface as supplied with Motorola transistors is either flat or slightly convex. It is important
that the mating heat-sink surface also be flat or slightly
convex to provide the best contact when the device is
properly secured.
Since the flange may be permanently deformed during
mounting, the device should not be dismounted and
remounted in another position, without checking the
flatness. The flange may be resurfaced using emery cloth
mounted on a large, flat block. While this removes the
gold- or nickel-plating, the thin layer of copper oxide
which rapidly forms causes an insignificant increase in
thermal resistance, although corrosion may occur.
Besides the usua~ precautions regarding surface flatness
and torque, the stripline package (see Figure 14a) requires
attention to the following: .
I. The device should never be mounted in such a
manner as to place ceramic-to-metal joints in tension.
2. The device should never be mounted in such a
manner as to .apply force on the strip leads in a. vertical
direction towards the cap.
3. When the device is mounted in a printed circuit board
with the copper stud or flange and BeQ portion of the
header passing through a hole in the circuit board,
adequate clearance must be provided for the BeQ to
prevent shear forces from being applied to the leads.
4. Some clearance must be allowed between the leads,
and the circuit board when the device is properly secured
to the heat sink.
5. The device should be properly secured into the heat
sinks before the device leads are attached into the circuit:
6. The leads must not be used to prevent device
rotation on stud type devices during stud torque application. A wrench flat is provided for this purpose.
Most of the considerations listed above are designed
to prevent tension at the metal-ceramic interfaces on the
SQE package. Improper mechanical design can lead to
application of stresses to these joints resulting in device
destruction. Three joints are considered: the cap to the
BeQ disc, the leads to the disc, and the stud or flange
to the disc.
The jOint between the ceramic cap and the BeD
ceramic disc is composed of a material which loses
strength above 17S oC. While the strength of the material
returns upon cooling, any force applied to the cap .at
high temperature may result in failure of the cap to
ceramic jOint.
Figure 14b shows a cross-section of a printed circuit
board and heat-sink assembly for mounting a stud type
stripline device. H is the distance from the top surface
of the printed circuit board to the D-flat heat-sink surface.
If H is less than the minimum distance from the bottom
of the lead material to the mounting surface of the
package, there is no possibility of tensile forces in the
copper stud-BeD ceramic joint. If, however, H is greater
than the package dimension, considerable force is applied
to the cap to BeQ joint and the BeQ to stud joint. Two
occurances are possible at this point. The first is a cap
joint failure when the structure is heated, as might occur
during the lead-soldering operation; while the second is
BeQ to stud failure if the force generated is high enough.
Lack of contact between the device and the heat-sink
surface will occur as the differences between H and the
package dimension becomes larger, this may result in
device failure as power is applied.
Figure 14c shows a typical mounting technique for
flange-type stripline transistors. Again, H is defined' as
the distance from the top of the printed circuit board to
the heat-sink surface. If distance H is less than the
minimum distance from the bottom of transistor lead
to the bottom surface of the flange, tensile forces at the
various joints in the package are avoided. However, if
distance H exceeds the package dimension, problems
similar to those discussed for the stud type devices can
occur. Because of the ability of the copper flange to bend
(a) Component Parts of a Stud Mount Stripline Package.
Flange Mounted Packages Are Similarly Constructed
"0" Flat
Printed
(~.-i<;'i'-I+r'4--+ Metal
Heat
Sink
Side View
Cross Section
(b) Typical Study Type SOE Transistor Mounting Methods
Mounting
Holes
Circuit
Board
'--':.....,=-...,,::-->-=..~ Copper
Conductors
Spacer
Sink Surface
(e) Flange Type SOA Transistor Mounting Method
FIGURE 14 - Mounting Details for SOE Transistors
8-27
•
AN-778
FREE AIR AND SOCKET MOUNTING
In certain situati·ons. in particular where semiconductor
testing is required, sockets are desirable. Manufacturers
have provided sockets for all the packages available from
Motorola. The user is urged to consult manufacturers'
catalogs for specific details.
In applications where average power dissipation is of
the order of a watt or so, power semiconductors may be
mounted with little or no heat-sinking_ The leads of the
various metal power packages are not designed to support
the packages; their cases must be· firmly supported to
avoid the possibility of cracked glass-to-metal seals around
the leads. The plastic packages may be supported by their
leads in applications where high shock and vibration
stresses are not encountered and where no heat sink is
used. The leads should be as short as possible to increase
vibration resistance and reduce thermal resistance.
In many situations, because its leads are fairly heavy,
the TO-127 package has supported a small heat sink;
however, no definitive data is available. When using a
small heat sink, it is good practice to have the sink rigidly
mounted such that the sink or the board is providing total
support for the semiconductor. Two possible arrangements
are shown in Figure 15. The arrangement of part (a) could
be used with any plastic package, but the scheme of part
(b) is more practical with Case 77 or Case 90 Thermopad
devices. With the other package types, mounting the
transistor on top of the heat sink is more practical.
HANDLING PINS. LEADS, AND TABS
The pins and lugs of metal-packaged devices are not
designed for any bending or stress. If abused, the glassto-metal seals could crack. Wires may be attached using
sockets, crimp connectors, or solder, proVided the datasheet ratings are observed.
The leads and tabs of the plastic packages are more
flexible and can be reshaped, although this is not a recommended procedure for users to do. In some cases, a heat
sink can be chosen which makes lead-bending unnecessary.
Numerous lead- and tab-forming options are available
from Motorola. Preformed leads remove the risk of
device damage caused by bending from the users.
If, however, lead-bending is done by the user, several
basic considerations should be observed. When bending
the lead, support must be placed between the point of
bending and the package. For forming small quantitites
of units, a pair of pliers may be used to clamp the leads
at the case, while bending with the fingers or another
pair of pliers. For production quantities, a suitable fixture
should be made.
The following rules should be observed to avoid
damage to the package.
1. A lead-bend radius greater than 1/16 inch is advisable
for TO-I 26, 1/10 inch for TO-I 27 and Case 199, and 1/32
inch for TO-220.
2. No twisting of leads should be done at the case.
3. No axial motion of the lead should be allowed
with respect to the case.
The leads of plastic packages are not designed to withstand excessive axial pull. Force in this direction greater
than 4 pounds may result in permanent . damage to the
device. If the mounting arrangement imposes axial stress
on the leads, a condition which may be caused by thermal
cycling, some method of strain relief should be devised.
An acceptable lead-forming method that provides this
relief is to incorporate an S-bend into the lead. Wirewrapping of the leads is permissible, provided that the
lead is restrained between the plastic case and the point
of the wrapping. The leads may be soldered; the maximum soldering temperature, however, must not exceed
275 0 C and must be applied for not more than 5 seconds
at a distance greater than 1/8 inch from the plastic case.
When wires are used for connections, care should be
exercised to assure that movement of the wire does not
cause movement of the lead at the lead-to-plastic junctions.
Thermopad
Heat-Sink Surface
Twist Locks
Circuit
Board~
or
Solderable
Legs
(a) Simple Plate, Vertically Mounted
•
CLEANING CIRCUIT BOARDS
It is important that any solvents or cleaning chemicals
used in the process of degreasing or flux removal do not
affect the reliability of the deVices.
Alcohol and un chlorinated Freon solvents are generally
satisfactory for use with plastic devices, since they do not
damage the package. Hydrocarbons such as gasoline may
cause the encapsulant to swell, possibly damaging the
(b) Commercial Sink, Horizontally Mounted
FIGURE 15 - Methods of Using Small Heat Sinks
With Plastic Semicondu·ctor Packages
8-28
AN-778
transistor die. Likewise, chlorinated Freon solvents are
unsuitable, since they may cause the outer package
to dissolve and swell.
When using an ultrasonic cleaner for cleaning circuit
boards, care should be taken with regard to ultrasonic
energy and time of application. This is particularly true
if the packages are free-standing without support.
Substitution
This method is based upon substituting an easily
measurable, smooth dc source for a complex waveform.
A switching arrangement is provided which allows
operating the load with the device under test, until it
stabilizes in temperature. Case temperature is monitored.
By throwing the switch to the "test" position, the device
under test is connected to a dc power supply, while another
pole of the switch supplies the normal power to the load
to keep it operating at full power level. The dc supply is
adjusted so that the semiconductor case temperature
remains apprpximately constant when the switch is thrown
to each position for about 10 seconds. The dc voltage and
current values are multiplied together to obtain average
power. It is generally necessary that a Kelvin connection
be used for the device voltage measurement.
THERMAL SYSTEM EVALUAnON
Assuming that a suitable method of mounting the semiconductor without incurring damage has been achieved,
it is important to ascertain whether the junction temperature is within bounds.
In applications where the power dissipated in the
semiconductor consists of pulses at a low duty cycle,
the instantaneous or peak junction temperature, not
average temperature, may be the limiting condition. In
this case, use must be made of transient thermal resistance
data. For a full explanation of its use, see Motorola
Application Note, AN-569_
Other applications, notably RF power amplifiers
or switches driving highly reactive loads, may create
severe current crowding conditions which render the
traditional concepts of thermal resistance or transient
thermal impedance invalid. In' this case, transistor
safe operating area or thyristor di/dt limits, as appJjcable,
must be observed.
Fortunately, in many applications, a calculation of
the average junction temperature is sufficient. It is
based on the concept of thermal resistance between
the junction and a temperature reference point on the
case. (See Appendix A.) /I rille wire thermocouple should
be used, such as #32/1 we;, to determine case temperature.
Average operating junction temperature can be computed
from the following equation:
where
APPENDIX A
THERMAL RESISTANCE CONCEPTS
The basic equation for heat transfer under steady-state
conditions is generally written as:
q=hA'c'T
where
(I)
q = rate of heat transfer or power dissipation
(PO),
h = heat transfer cofficient.
A = area involved in heat transfer,
,C,T = temperature difference between regions
of heat transfer.
However, electrical engineers generally find it easier to
work in terms of thermal resistance, defined as the ratio
of temperature to power. From Equation I, thermal resistance, RO, is
(2)
RO = ,C,T/q = l/hA
TJ =T('+ ROJC xPO
T J = junction temperature (0C)
TC = case temperature (OC)
ROJC = thermal resistance junction-to-case as
specified on the data sheet (OC/W)
Po = power dissipiated in the device (W).
The coefficient (h) depends upon the heat transfer
mechanism used and various factors involved in that
particular mechanism.
An analogy between Equation (2) and Ohm's Law is
often made to form models of heat flow. Note that
,C,T could be thought of as a voltage; thermal resistance
corresponds to electrical resistance (R); and, power (q) is
analogous to current (I). This gives risc to a basic thermal
resistance model for a semiconductor as indicated by
Figure AI.
The equivalent electrical circuit may be analyzed by
using Kirchoffs Law and the following equation results:
The difficulty in applying the equation often lies
in determining the power dissipation. Two commonly
used empirical methods are graphical integration
and substitution.
Graphical Integration
where
Graphical integration may' be performed by taking
oscilloscope pictures of a complete cycle of the voltage
and current waveforms, using a limit device. The pictures
should be taken with the temperature stabilized. Corresponding points are then read from each photo at a
suitable number of time increments. Each pair of voltage and curren t values are multiplied together to give
instantaneous values of power. The results are plotted
on linear graph paper, the number of squares within
the curve counted, and the total divided by the number
of squares along the time axis. The quotient is the average
power dissipation.
TJ = PO(ROJC + ROCS + ROSA) + TA
TJ = junction temperature,
Po = power dissipation,
ROJC = semiconductor thermal resistance
Gunction to case),
ROCS = interface thermal resistance
(case to heat sink),
ROSA = heat sink thermal resistance
(heat sink to ambient),
TA = ambient temperature.
(3)
The thermal resistance junction to ambient is the sum
of the individual components. Each component must be
minimized if the lowest junction temperature is to result.
8-29
•
AN-778
The value for the interface thermal resistance, ROCS, is
affected by the mounting procedure and may be significant compared to the other thermal-resistance terms_
The thermal resistance of the heat sink is not constant;
it decreases as ambient temperature increases and is
affected by orientation of the sink. Tlie thermal resistance
of the semicon.ductor is also variable; it is a function of
biasing and temperature. In some applications such as in
RF power amplifiers and short-pulse applications, the
concept may be invalid because of localized heating in
the semiconductor chip.
T J. Junction Temperature ~
r---::;=o
Roes
ROSA
FIGURE A1 - Basic Thermal Resistance Model Showing Thermal to Electrical Analogy for a Semiconductor
,APPENDIXB
SOURCES OF ACCESSORIES
Insulators
Manufacturer
Joint Compound
BeO
Aavid Eng.
Ther-o-link 1000
-
-
-
-
-
#829
-
-
X
-
IERC
Thermate
Staver
-
-
Thermacote
AHAM
Astrodyne
Delbert Blinn
Thermalloy
Tor
Tran-tee
Wakefield Eng,
•
-
X
X
-
-
-
X
X
X
X
X
X
X
X
X
X
X
-
X
-
-
X'
X
X
X
X
X
X
X
X
X
-
-
-
-
-
-
-
X
X
-
X
X
-
X
X
X
X
X
X
X
X
X
-
-
-
-
,-
X
X
-
X
X
X
-
X
-
X
-
-
X
-
X
X
-
X
X
X
-
X
-
X
X
X
X
-
X
-
-
-
X
TJC
X
X
Type 1,20
X
Wei Corp.
-
-
XL500
Other sources for Joint Compounds:
AI02 Anodize Mica
Heat Sinks
Plastic Silicone
Film Rubber Stud Flange Disc Thermowatt Uni/Duo Watt RF Stripline
-
-
-
-
-
X
X
Dow Corning, Type 340
Emerson & Cuming, Eccoshield - SO (Electrically Conducting)
Emerson & Cuming, Eccotherm - TC-4 (Electrically Insulating)
APPENDIX B
SUPPLIERS ADDRESSES
Aavid Engineering, Inc., 30 Cook Court, Laconia, New
Hampshire 03246
(603) 5244443
International Electronics Research Corporation, 135 West
Magnolia Boulevard, Burbank, Califofilia 91502
(213) 849-2481
The Staver Company, Inc., 41-51 North Saxon Avenue,
Bay Shore, Long Island, New York 11706
(5\6) 666-8000
Thermalloy, Inc., P,O. Box 34829, 2021 West Valley
View Lane, Dallas, Texas 75234
(214) 2434321
Tor Corporation, 14715 Arminta Street, Van Nuys,
California 91402
(213) 786-6524
Tran-tec Corporation, P.O, Box 1044, Columbus,
Nebraska 68601
(402) 564-2748
Wakefield Engineering, Inc., Wakefield, Massachusetts
01880
(617) 245-5900
Wei Corporation, 1405 South Village Way, Santa Ana,
California 92705
(614) 834-9333
AHAM Heat Sinks, 27901 Front ,Street, Rancho, California 92390
(714) 6764151
Astrodyne, Inc., 353 Middlesex Avenue, Wilmington,
Massachusetts 01887
(617) 272-3850
Delbert Blinn Company, P.O. Box 2007, Pomona, California 91766
(714) 623-1257
Dow Corning, Savage Road Building, Midland, Michigan
48640
(517) 636-8000
Eaton Corporation, Engineered Fasteners Division,
Tinnerman Plant, P.O. Box 6688, Cleveland, Ohio 44101
(216) 523-5327
Emerson & Cuming, Inc., Dielectric Materials Division,
869 Washington Street, Canton, Massachusetts 02021
(617) 828-3300
8-30
Rectifier and Zener Diode
Selector Guide
9-1
These selector guides are included as a quick reference to Motorola product lines often
used in conjunction with power devices.
RECTIFIERS
General-Pu rpose Rectifiers
Motorola offers a, wide variety of low·cost devices, packaged to meet diverse mounting
requirements. Of particular interest are plastic "buttons': such as the MR2500 series,
designed for clip or recessed mounting, and the new plastic D04 stud·mounts, derived
from these buttons, types MR2000S and MR2500S. AI/listed lines are available with
anode-to-case connection by adding URn suffix to the standard part nutnber.
r
10. AV!!RAGe fUlCTIFI!!D FOAWARb CURRENT (Anlpel'••
1.0
59-01
(00-41)
1.5
59-04
(00-15)
3D
70
267
194
Metal
Metal
Plastic
Plastic
Plastic
!SO
lN4001
lN5391
lN4719
lN4997
MR500
lN5400
MR750
tOO
lN4002
lN5392
lN4720
lN4998
MR501
lN5401
MR751
'200
lN4003
lN5393
lN4721
lN4999
MR502
lN5402
MR752
40D
lN4004
lN5395
lN4722
lN5000
MR504
lN5404
MR754
600 ..
lN4005t
lN5397
lN4723
lN5001
MR50S
lN540S
MR75S
silo
lN4006 t
lN5398
lN4724
lN5002
MR508
lN5407
MR758
1000
lN4007 t
lN5399
lN4725
lN5003
MR510
lN5408
MR760
IF$M
lAmps)
30
50
300
300
100
200
400
TAIt. Aated 10
75
TL -70
75
75
95
TL - 105°C
60
{oct
TC@Rated
l"Cl
TjlMa.}
•
I
III p
VRRM
Volts
10
175
175
175
175
lOCI
t Package Size: 0.120" Max Oiameter by 0.2S0" Max Length
9-2
12
6,(1
60
175
175
175
245
(00-41
283-01
(00-41
Metal
Plastic
~
e1
~
MR1120
lNI199,A.B
MR1121
lNI200.A,B
lN1199C
MR1122
1 NI202,A.B
MR1124
lNI204,A.B
MR1126
lNI206.A,B
lN1202C
lN1200C
lN1204C
lN1206C
MR1128
lN3988
MRII30 .
lN3990
300
400
150
150
190
200
GENERAL PURPOSE RECTIFIERS (continued)
to. AVERAGE RECnFIED FOAwAAPCURRENT tAnlPefesl.
I
1$
20'
42A
(00-5)
Metal
. . :. 2S
.I
42A
(00-5)
283-01
(00-4)
283-01
(00-4)
Metal
Plastic
Plastic
9
Plastic
1'.",30
'. I .
3!1
40
50
43
(00-21)
43
(00-21)
42A
(00-5)
42A
(00-5)
43-04
Metal
Metal
Metal
Metal
~
~
__ -,1'
193-03
f)
f
Metal
liP
!iS
lN3208
1 N248B
lN1191
MR2000S
MR2500S
MR2500
lN3491
lN3659
lN1183
lNl183A
MR5005
lN3209
lN249B
lN1-192
MR2001S
MR2501S
MR2501
lN3492
lN3660
lN1184
lNl184A
MR5010
lN3210
lN250B
lNl194
MR2002S
MR2502S
MR2502
lN3493
lN3661
lN1186
lNl186A
MR5020
lN3212
lNl196
lNl196A
MR2004S
MR2504S
MR2504
lN3495
lN3663
lN1188
lNl188A
MR5040
lN3214
lNl198A
lN3214
MR2006S
MR2506S
MR2506
. MR328
CF
lN1190
lNl190A
CF
CF
CF
MR2008S
MR2508S
MR2508
MR330
CF
lN3766
CF
CF
CF
CF
MR2010S
MR2510S
MR2510
MR331
CF
lN3768
CF
CF
250
350
400
600
400
.300
400
400
800
600
150
150
150
150
150
130
100
140
150
150
175
175
190
190
195
175
At.
Request Data Sheet for Mount-ing Information
CF: Consult Factory
9-3
Rectifier Bridges
Motorola SUPERBRIDGES offer cost effectiveness and reliability in single phase
applications. Chiplleadframe techniques are used for lower·current types, while the higher
current assemblies combine pretested "button" rectifier cells for low assembly cost and
high yields. Performance of four individual diodes is achieved at the cost of only two,
with reliability of the whole assembly comparable to that of a single unit. The higher
current assemblies feature versatile slip·onlsolder/wire wrap terminals.
10. DC OUTPUT CURR.ENT CAmper..)
'2.:0
4.0/8.0*
12
1.5
1.\1
109·03
312·02
117
312·02
0,6"
k~-;; )t;~~
r--{ }t~
l...
A..
04
0,15
,VRRM
Volts
::(015
50
"015
~~
~ /0:75
0,2
'iU
~
35
309A·02
.. -».
>- I~/ ~:;
,,~
;
,;
so~
~.
"
1,3/a"
'iU
so"-
'iU
3N246
MDA100A
3N253
MDA200
MDA970·1
MDA1200
MDA2500
MDA3500
BYW60
MDA920A3
3N247
MDA101A
3N254
MDA201
MDA970·2
MDA1201
MDA2501
MDA3501
BYW61
MDA920A4
3N248
MDA102A
3N255
MDA202
MDA970·3
MDAI202
MDA2502
MDA3502
BYW62
MDA920A6
3N249
MDA104A
3N256
MDA204
MDA970·5
MDA1204
MDA2504
MDA3504
BYW64
, 1lOo
MDA920A7
3N250
MDA106A
3N257
MDA206
CF
MDA1206
MDA2506
MDA3506
BYW66
800
MDA920A8
3N251
MDA108A
3N258
MDA20B
MDA3508
BYW68
MDA920A9
3N252
MDAll0A
3N259
MDA210
MDA3510
32
45
60
50
75
55
','
200 ,
,
"
"
4011, '
1000,
"
fFSM
..
,.. lAmp)
, TAllii Rat9d 10 '
,', ,lOCI'
100
400
400
100
55
55
175
175
175
,
,
toel" " "
}fJlMaI(}, ,:
"tOC)'
400
"
TC. ~odfO:
II
25
309A·03
MD~920A2
, 100
"
'iU
~
/,,?,~
321.01:;1
175
150
175
150
'
CF: Consult Factory
'4,0 A@TA = 25°C
8,OA@TC=550C
en, UL
'nil
RECOGNIZED
SUPERBRIDGES is a trademark of Motorola Inc:,
9-4
Dimensions given are nominal
Fast Recovery Rectifiers
... available for designs requiring a power rectifier having maximum
switching times ranging from 200 ns to 750 ns. These devices are
offered in current ranges of 1.0 to 50 amperes and in voltages to
600 volts. Higher voltages are available upon request, but a necessary
trade-off against switching speeds results. Reverse polarity (anode
to case) obtained by adding an "R" suffix.
10, AVERAGE RECTIFIED FORWARD CURREt,lT {Ampores,
20 .
3.0
5.0
&.Q
12
1..0
59-{)4
Plastic
60
Metal
70
Metal
267-01
Plastic
194
Plastic
5t'-{)2
IDO-4)
Metal
Note 1
/ f ff I f
VRRM
IVolts)
I
30
40
257
100-5)
Metal
Notes 2_ 3
J 50
42A
100-5)
Metal
~ ~
~
./~
It'"
. 50
lN4933 t
MR810 MR830 MR800 MR850
MR910 MR820 lN3879
lN3889
lN3899
lN3909 MR860 MR870
: .100
lN4934
MR811
MR911
lN389(! IN.3900
lN39tO MR861 MR871
':200 .
MR83.1 MR801
MR851
MR821 1N3880
lN4935 t
MR812 MR832 MR802 MR852
MR912 MR822 lN3881
IN3891
lN3901
lN39'11 MR862 MR87
.:./'~
lN4936 t
MR814 MR834 MR804 MR854
MR914 MR824 lN3883
1N3893
lN3903
lN3913 MR864 MR87'
"iIlJO
lN4937 t
MR816 MR836 MR806 MR856
MR916 MR826 MR1366 MR1376 MR1386 MR1396 MR866 MR87E
MR817
MR917
"
'BOil
. ',1QOO.·
MR818
':'.<:~
30
30
'fA·CtJiated 10
75
75
·..····'°01'
:TC tf l'tllt8d 10
MR918
100
100
100
100
100
100
300
90'
90'
55'
150
200
250
300
350
400
100
100
100
100
100
100
'. iDeI
''fJ~1
.'
.~Dcn
150
150
150
150
175
175
175
150
150
150
150
160
160
.·;t"
0.2
0.75
0.2
0.2
0.2
0.75
0.2
'0.2
0.2
0.2
0.2
0.2
0.2
>~}.'
*Must be derated for reverse power dissipation. See Data Sheet.
t Package Size: 0.120" Max 0 iameter by 0.260" Max Length
JAN/JANTXIV) available
. NOTES: 1. Also available in economical Case 245; add suffix -245 to part number. (Not applicable in JAN or JTX.)
2. Also available in economical Case 42A; add suffix -42A to part number. (Not applicable in JAN or JTX.I
3.' Braided lead top terminal configuration available; consult your Sales Representative.
9-5
•
v
Schottky Rectifiers
Refinements in processing of SWITCHMODE Schottky Power Rectifiers are producing
ruggedness and temperature performance comparable to silicon-junction rectifiers, with
the high speed and low forward voltage drop characteristic of Schottky's metal/silicon
junctions. Ideal for use in low voltage, high frequency power ~upplies and as very fast
clamping diodes, these devices feature switching times less than 70 ns, and are offered
in current ranges from 0.5 to 75 amperes, and reverse voltages to 45.
10. AVERAGE, RECTIFIED FORWAROetJRRENT
1.0'
3.0'
3.0 '
!
59-04
267
60
0'.5
51-02
IDO-71
Glass
Plastic
fAmp., .. ~ ,
,/
s.o
15,
245
(DO-41
Metal
Plastic
/ / I
Metal
~~
VRRM
IVoltsl
, 20'
30
MBR020
lN5817
MBR120P
lN5820
MBR320P
MBR320M
lN5823
lN5826
MBR1520
ttMBR030
lNse18
MBR130P
lN5B21
MBR330P
MBR330M
lN5B24
lN5B27
MBR1530
MBR335P
MBR335M
,35,"
40'
MBR135P
MBR1535
MBR040
lN5819
MBR140P
lN5822
MBR340P
MBR340M
ttlN5B25
lN5828
MBR1540
5.0
100
50
250
200
500
500
500
500
B5
80
125
125
45
,IFSM
CAmps)
tTc @ Rated 10
(OCt:
TA@,Rated 10.
pe,Boa'"
50
MouotlClC)
tTL @ Rated 10
tOC)
TJ(Max)'
IOCl
MaXVF@',
IFM,-Ia
•
125
90
80
95
85
90
80
125
125
125
125
125
125
0,45@5A
'0.60
0,65
'0,525
0.60
'0,55
TL = 25°C TL =25°C TL = 25°C TL =25 0 C TL = 25°C TC = 25°C
* Values are for the 40·Volt units. The lower voltage parts provide lower limits .
t Must be derated for reverse power dissipation. See Data Sheet.
ttMotorola TX versions available, consult factory.
SWITCHMODE is a trademark of Motorola Inc.
9-6
0,55
'0.50
'0.38
TC = 25°C TC =25°C TC = 25°C
SCHOTTKY RECTIFIERS (continued)
, 10. AVERAGE RECTiFIED FD,RWARD: CURRENT (Amper..l, '
lIS
'40' ",
3&
245
(00-4)
Metal
11
lN5829
lN5830
MBR2520
MBR2530
M8R3&20 '
MBR2535
tlN5831
MBR2540
$041
I'
60
257
(00-5)
Metal
Note 1
Metal
Metal
Note 1
t
~
lN5832
MBR4020
lN5833
MBR4030
MBR4020PF
MBR4030PF
MBR4035
MBR4035PF
MBR3535
lN6096
':\'
50
430-2
(00-21)
1)
lN6005
.
257
(00-5)
lN5834
' MaR6020
lN609y.', ,,::,5051
MSR;7520
MBR7.630
, :MB'R6036
MBR7535
JN6O\li!'
MBR4040
75
MBR7640
:tMBR6045 ,MBfl764 5 ,
tMfilR3546 ,
BOO
BOO
400
:600
800
800
800
8O(V,
85
80
70
'jja5
75
70
50
cza'
~OO
"
"
90,
1000
90
.. .
:
,
125
125
'0.48
TC = 25°C
0.55
TC = 25°C
125
,,"100
125
1J.81i1'!> 78.5A O;70@78.5A
:'fa ~ 70"e ,16
'0.59
= 125°C TC = 25°C
•••• p
•••
125
125
0.63
Tc = 25°C
0.63
TC = 25°C
125';" "
, ..
.. ,
150 '
"
150,
,., ~'
O.8eli>lS1A O~Wl.157A 0.904l>220A
'rd'-: ip!l¢ ; TC'" t2S0C
Tc:" i;?6.?e
Capable of 150°C junction temperature operation .
(1) Braided lead top terminal contiguration available; consult your Sales Representative.
tMotorola TX v.ersions available, consult factory.
9-7
•
ZENER DIODES
Zener and Avalanche Regulator Diodes
Motorola's standard Zeners and Avalanche
Regulator diodes comprise the largest inventoried
line in the ,industry .. Continuous development of
improved manufacturing techniques have resulted
in computerized diffusion and test, as well as
critical process controls learned from surface·
sensitive MOS fabrication. Resultant 'high yields
lower factory costs. Check the following features
for-application to you~ specific requirements:
• Wide selection of package materials and styles:
Plastic (Surmetic) for low cost, mechanical
ruggedness
Glass for highest reliability, lowest cost
. Metal for highest power
• Power ratings from 0.25 to 50 Watts
• Breakdown voltages from 1.B to 200 V in
approximately 10% steps
• Available tolerances from 20% (low cost) to
as tight as ·1% (critical applications) with
off-the·shel f del ivery
.
• Special selection of electrical characteristics
available at low cost due to high-volume
lines (check your Motorola sales representative for special quotations)
• JAN/JANTX (V) availability (designated by tint)
• Speci'al glass now 'used in 00-35 packages is'
compatible with low temperature alloy
processes, yielding sharper breakdown and
I~w leakage,
1. The Zener ,voltage is measured at approximately 1/4
the rated power, exe~pt for the MZ4614/1 N4099
series. This series is measured with IZT == 250 }JAde.
The 1 N4370/1 N746 series is measured with IZ.T =
20 mAde.
2. Contact your Motorola representative for information
on intermed,iate yoltages and tighter tolerances.
Tolerances
=
± 5%.
4. No suffix = ± 20%} with guaranteed limits on VZ,
A suffix = ± 10%
VF, and IR only'
B suffix' = ±5%
'
C suffix = ± 2%
o suffix = ± 1%'
5. 1 N4370/1 N746 series: No suffix = ± 10%
A suffix = ±5%
1 N957 series:
No Suffix = ± 20%
A suffix = ± 10%
B suffix
•
INotol)
250 MILLIWATT
1400 mW Pack"llo)
Low Noise
Cathode·
Polarity Mark
INotos2,3)
= ± 5%
6. No suffix"" ±10%, with guaranteed limits on VZ.VF,
and IR only
A suffix = ± 10%
B suffix = ±5%
::' ,:; JA'N/JANTXIVI available, ±5% only.
tMilitary parts in lN43701746/962 series at standard
lN985-1N992 supplied in 00-7.
#1 N5271 - 1 N5281 supplied in Surmetie 00-7.
400 MILLIWATT
Low Noise
Low Leakage
Cathode·
Polarity Mark
INotos2,41
500 MILLIWATT
Cathode· Polarity Mark
/
Gla..
Case 51 100-71
1.8
2,0
2.2
2.4
2.7
3.0
3,3
3.6
3.9
4,3
4.7
5.1
5.6
6.2
6.8
M2:4614
·MZ4615
MZ46'EI
MZ4611'
: . ,MZ4618'. '.:.
M:t461~ .'
7,5
1N41111,l'
'.~5!J21
8.2
"1'4'1>'
lf11"~
8.7
9.t
'fII4'1I2
10
,'' '4.04 :
IN
1
.. ..
13
14
15
16
':
l~~~
,
.N51i>211
',1115530
lNSS31
lN5532
.,
:~:m"
lN55:!3
"1115535
'11015536
11<15537
11'44.111
'",4112
17
ll11$i1$e
'
,
"."~~~
lli1l164,
.; .. ",
.1N!l11$
. -"'1411(1,'.
~~m,'
~~~~~ .
11'44121
lN4122
tN41.2;1
· ,"'1N4124
:lNII.2'1
I~:i~
11'141211
'1N4,:29
·,IN4T30·
'. : 1014131'
,"lN4132 .
· .:: .11114133.
· ,~=;lrs,'
.
,
.: .,
.'~
lN957
i~~
.
l~~g
11'<751
lN960
1101758,
lN961
lN962
1N759
lN963'
,~
11115S34
.'. :"0141~
'IN4110
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
'56
60
62
68
75
82
87
91
100
110
120
130
140
150
160
170
180
200
~...
. ,~.
'INI!II26 ,'"
··,.U·0410..
:~'06
tlll141 .
l=ra:<
.,r
\I"4~03
..
~I
,.',f'43'1f
,
~.~?; '"
W\;523',·· ,'. : .'
M
'.
. M~4626 ' , .
M2:4627 , ..-'
, '."4Il" . ;'
Glass
100-35)t
:. :" .,. .
.,:
; ' , ..~~~~
.:.
:. ';" ,;
. 11115544
11115545
lN5546
11'4&65
1NII66
lN5221
lN5223
1N5225
lN5226
lN5227
lN5228
lN5229
lN5230
lN5231
lN5232
lN5234
lN5235
lN5236
lN5237
lN5238
lN5239
lN5240
lN5241
lN5242
lN5243
lN5244
lN5245
lN5246
lN5247
lN9G7
lN5248
1N5249
lNaGtl
1!11S.1i
lN910
1JiI911
.1.101912
.tll/973
lN974
.IN975
1!11S16
.1N911
1111978
',101979
'm=~
11'4982
,1~.3,
..
"·11\1984
:.:=
:IN981
':'N988 .
;!IIS8g
11<1990·
~~~.
9-8
I INot.. 2,6)
INotes 2,5)
/.
11
12
NOTES
3 .. No suffix
Nominal
Zener
Voltage
tN5250
lN5251
lN5252
lN5253
lN5254
lN5255
1 N5256
lN5257
lN5258
lN5259
lN5260
lN5261
lN5262
lN5263 .
lN5264
,N5265
lN5266
lN5267
lN5268
lN5269
lN5270
lN5271#
lN5272#
lN5273#
lN5274#
lN5275#
lN5276#
lN5277 #
i~m~#
11'45281 #
ZENER AND AVALANCHE REGULATOR DioDES (continued)
1 WATT
Nominal
Zener
Voltage
Cathode =
Polaritv Mark
1 WATT
Cathode
to Case
Metal
Case 52
(00·13)
1.5 WATT
1.5 WATT
5 WATT
Cathode =
Polarity Mark
Cathode
to Case
Cathode =
Polarity Marl<
50 WATT
10 WATT
Cathode to Case
i~i.
Ca .. 59
(00·41)
120
130
150
160
170
180
200
A, RA, and RS ." Reverse
Ca•• 55
= 1 N3993 Series
Anode to Case
= 1 N2970 Series
Anode to Case
Metal
Case 54
(T0·3)
Metal
Case 58
(00·5)
lN3819
lN3820
.;; ... JAN/JANTX{V) available, ±5% only.
NOTES-Tolerances (continued)
7.
No suffix"'"
;!:
10%
A suffix ~ ± 5%
8. 1N3821 series:
lN3016 series:
9.
C suffix == ±2%
o suffix:: ± 1%
10. No suffix:::: ± 20%
A suffix"" ± 10%
B suffix:::: t 5%
11. No suffix'" ±20% with guaranteed limits on VZ. VF. IR.
and iR only
A suffix:::: ± 10%
B suffix == ± 5%
No suffix"-! 10%
A suffix" ! 5%
No suffix:: 120%
A suffix == i 10%
B suffix:::: ± 5%
No suffix == .!: 20%
A suffix = ± 10%
B suffix == ! 5%
9-9
•
Zener Reference Devices
at the specifically Indicated test temperatures and test current
For applications VIIhere output voltage must remain within
narrow limits during changes In input voltage, load resistance
and temperature. Motorola guarantees all Reference Devices
(JEDEC Standard #5). Temperature Coefficient is alia speci·
fied but should be considered as a reference only - not a max-
to fall within the specified maximum voltage variations.Il.VZ.
imum rating.
Devices in this table -are hermetically sealed structures.
Includes JAN. JANTX and radiation hardened device types.
These temperature compensated Zener Reference Diodes have
low dynamic impedance and silicon-oxide-passivated junctions
~"
GLASS
for long-term stability.
--:::2
~
·~~S;A5L
All deVices Case 51 (00·7) e)Ccept as noted.
-.
..
'
..
~;
_.
AVERAGE rl!MP£lI4TUflE COEFFICIENT .ovell nllr OI'C!RATiNG RA/IICI£
,
;::
1'"
. Clurnmt::
'mAde"
·r.. :
'1"_'
9.0t'K/'"C
.Qto.Ioe
Jypa
""""
...:·r_.·."'.
: oO.k:e
!~yz
Mox
Yo"".
':tNe21 ,
0.096
.iN~r
0048
,N$$+'
0.019
lNe21~'
0.009
H'8~;·,.·
0.005
lN821A
0.096
lN823A
0048
lNB25A
0.019
lN827A
0.009
lN829A
0.005
B
A
B
A
B
A
B
A
1 N4565
0.018
0.099
0.048
0.099
0.048
0.099
0,048
0.099
1 N4566
0.024
lN4567
0.010
lN4568
1 N4569
lN4578
lN4578A
lN4583
lN45B3A
0.005
0.010
0,005
0.010
0.005
0.010
0005
0.010
lN4579
lN4579A
lN4584
lN45B4A
0.002
0.005
0.002.
0.005
0.002
0.005
0.002
0.005
10
10
0.5
0.5
1.0
1.0
7.5
7.5
7.6
A
C
B
A
B
A
B
A
C
11.7
."'N_SA
lN4570
1N4"610A
lN4575
lN457SA
lN4S80
lN4580A
lN4573
·'.I1/46f'tA
1 N4576
lN4576A
lN4S81
lN4581A
0.010
;'NO!!11ZA 0.020
lN4577
0.010
lN4577A 0.020
lN4582
0.010
lN4582A 0.020
1N,4I>1;!'A
lN4~
1 N4574
'N45l4A
0.065
0.085
, ..;0186,
lN315SA
IN'3156A
0.026
0.034
1I'..I3Hl7,
lNa157A
0.013
0.017
lN4775
lN4775A
1 N4780
lN4780A
0.064
0.132
0.064
0.132
lN4776
'1N4776A
lN47Bl
lN4781A
0.032
0.066
0.032
0.066
1 N4777
lN4777A
lN4782
lN4782A
0.013
0.026
0.013
0,026
lN4778
lN4778A
lN4783
lN4783A
0.006
0013
0,006
0.013
lN4779
lN4779A
lN4784
lN4784A
0.003
0.007
o.ooa
0.007
lN935
lN935A
1-N9358j
0.067
0.139
0.184
lN936
lN936A
0.033
0.069
0.092
lN937
lN937A
tN9318 j
0.013
0.027
0.037
lN938
lN938A
0.006
0.013
0.018
lN939
lN939A
""'113"'("
lN1iIi*,
0.003
0.007
0.009
lN941
1N941A
. ,;;'941.11;
-55,0, +25, +75, +100
0, +25, +75
-55,0, +25, +75, +100, +150
0, +25, +70
-55,0, +25, +75, +125
-55,0, +75, +125, +185
+25, +75, +100
0.088
0.081
0.239
&
lN942
lN942A
l'~42P
0.044
0.090
0,120
'.""s3Im:
.'N2166,A 0.007 .,N2169,A 0,004
.,N2167,A 0.017 .,N2170,A 0.009
.'N216B,A 0.023 .'N2171,A 0.012
.,N2163,A 0.033
.,N2164,A 0.086
.'N2165,A 0.110
E
B
A
C
IN45Il8A'
lN4572
0.024
0.050
0.024
0.025
0.024
0.050
1.l\1."fl!lll:..
F
7.5
7.5
7.5
,N"II.nA 0.020
lN4571
0.130
0.072
0
10
1./OO,l!i6B"". 0.050
lN3154A
·...lN3~54,.
Test Temperature Points
•
""'.
A
~.2VI
E
o..,..i·
Typo
'IhII4
A
(Suffix
"A"
F
G
. ~."
,O.illil~
!AVz
'~'
7.5
9.4,0.4
o
""tri· :
.
7.5
0.5
0.5
1.0
1.0
2.0
2.0
4.0
4.0
9.0
C
"-TI"""r
:,~'
6.2&
8.5
•
Malt
6.2&
6.4
8.4
A
AV;jt
lN943
1N943A
'N9~g.
0.018
0.036
0.047
Non-suffix - ZZT - 15, "A" Suffi)C - ZZT" 10
JAN/JANTX(V)
9-10
avall~ble,
lN944
1N944A
:,,,,'9449
• 5% only
0.009
0.018
0.024
lN945
lN945A
,,.94!1$•
0.004
0.009
0,012
Precision Reference Diodes
Designed, manufactured and tested for ultra-high stability of
voltage with time and temperature change. Use of special measurement equipment and voltage standards provide calibration
directlv traceable to the National Bureau of Standards.
CERTIFIEO VOL TAGE TIME STABILITY OVER 1000 HOURS OF OPERATION
(PartslMillion Change)
Temperatur.
Stability
Ref.rance
Voltage
Volts
T ...
Current
mA l\VZlmV)
6.2:!: 5%
7.5
2.5
<5 PPM/1000 HR
OPTemp
Range
°e
25,75,100
Device
. Type
Change
"V
Max
MZ605
30
<10 PPM/1000 HR
Chango
"V
Max
Device
Type
MZ610
60
Amplifying Regulator Diodes
ELECTRICAL CHARACTERISTICS (IZT = 5 OmA VCEO =JOVI
66
G6
GU
10
50
5.0
Test Temperature
°c
8G
1::]
E
'B
.
NPN
A
66
10.
S.O
5.0
YII •
95
9.5
95
i:]~
"
"
"
10
5.0
5.0
10
50
-59, 0, +25,
-55, +100
MCA1921
MCA1922
MCA1923
MCA1924
0.139
0.069
0.026
0.013
MCA1931
MCA1932
MCA1933
MCA1934
0.060
0.030
0.012
0.006
MCA2011
MCA2012
MCA2014
MCA2014
-55, a, +25
+75, +100
0.124
0.062
0.024
0.012
MCA2021
MCA2022
MCA2023
MCA2024
-55,0, +25
+75,+100,+150
0.164
0.082
0.032
0.016
MCA2031
MCA2032
MCA2033
MCA2034
0.071
0.035
0.014
0.007
MCA2111
MCA2112
MCA2113
MCA2114
0.147
0.073
0.028
0.014
MCA2121
MCA2122
MCA2123
MCA2124
0.194
0.097
0.038
0.019
MCA2131
MCA2132
MCA2133
MCA2134
0.082
0.041
0.016
0.008
MCA2211
MCA2212
MCA2213
MCA2214
0.170
0.085
0.034
0017
MCA2221
MCA2222
MCA2223
MCA2224
0.225
0.112
0.044
0.022
MCA2231
MCA2232
MCA2233
MCA2234
0, +25, +75
-55,0, +25
-75,+100
-55,0, +25
+75,-100,+150
0, +25, +75
-55, 0, +25
-55,0, +25
+75,+100,+150
120
Chango
"V
Max
MZ64Q
240
/~
Type
0.105
0.052
0.020
0.010
0, +25, +75
MZ620
Device
Tvpe
Devl~.
O. +25, +75
+75, +100
5.0
VQlu
MCA1911
MCA1912
MCA1913
MCA1914
CASE
212·01
UG
AVREF
0.051
0.025
0.010
0.005
-55,0, +25
+75,+100,+150
Type
High impedance diodes whose "constant current
source" characteristic complements the "constant Voltage" of the zener line. Currents are
available from 0.22 to 4.7 mA, with usable
voltage range from a minimum limit of 1.0 to
2.5 V, up to a voltage compliance of 100 V,
for the lN5283 series, or 70 V, for the
Mel 1300 series.
temperature compensation for excellent reference voltage
stability. Available with either PNP or NPN transistors by adding
either P or N suffix to part number.
Tolefaftae
.%
Dovie.
<40 PPM/1000 HR
Change
"V
Max
Field-Effect Current
Regulator Diodes.
Designed for use in regulated power supplies as a combination
voltage reference element and error voltage amplifier. providing
VREP
1101..
<20 PPM/1000 HR
Case 51
00-7
K"~
Rog~-Cur1ent
OeviCD
NGm
TYIle
0.22
0.24
0.27
0.30
lN5283
lN5284
1N5285
0.33
0.39
043
0.47
1NS281
IN!$2aS
0.55
0.62
0.68
0.75
IN:52SS
1NEi2S9
1N5290
lN152"91
lN5:l92
1N5293
lN5::t!'94
0.82
0.91
1.00
1.10
1NS29S
lN5296
1.20
1.30
140
1.50
1N5299
1.60
1.80
2.00
2.20
lN5303
1N5304
2.40
2.70
3.00
3.30
1N5307
1N54QJ1
lN15309
3.60
3.90
4.30
4.70
lN5311
lN531:;!
1"15313
tN5291
1N5298
1N6300
1N6301
lN530;2:
1N.5305
1N53Q$
lNS~10
limiting
Mn
MOl<
Volts
275
2.35
1.95
1.60
100
1.00
1.00
1.00
~1.35
1.00
0.870
0.750
1.00
1.05
1.05
1.05
0.560
0.470
0.400
0.335
i.10
1.13
1.15
1.20
0.290
0.240
0.205
0.180
1.25
1.29
1.35
1.40
0.155
0135
0.115
0.105
1.45
1.50
1.55
1.60
0.092
0.074
0.061
0.052
1.65
1.75
1.85
1.95
0.044
0.035
0.029
0.024
2.00
2.15
2.25
3.35
2.50
2.60
2.75
2.90
Ma.
1"'5314
0.020
0.017
0.014
0.012
0.5tO.3
1.0tO.6
2.0tO.6
3.0+0.6
MCL1300
MCL1301
MCL 1302
MCL1303
0.500
0.200
0.100
0.050
1.00
1.50
2.00
2.00
4.0:t0.6
MeL 1304
0.025
2.50
c:::J
9-11
Imp
Voltage
%K
@VK=6.0V @IL-O.Slp
Ip
@VT"25V
mA
JAN/JANTX (V) availability
Low Voltage Regulators .
ELECTRICAL CHARACTERISTICS
High-conductance silicon diodes designed as stable
forward-reference sources for transistor amplifier biasing
and similar applications. Available in high reliability glass
construction or economic plastic packaging.
ITA
/
= 25°C unless otherwise noted).
Forwani
Rafareneot
Voltage
~'"C(~~.7)
Leakage
Current
Min
Max
Tast
Cul1'lll1t
IF rnA
0.63
0.71
10
10
5.0
MZ2360
1.24
1.38
10
10
5.0
MZ2361
1.90
0.58
1.29
1.33
1.94
2.00
0.58
2.10
0.70
1.43
1.39
2.14
2.08
0.70
10
1.0
10
10
10
10
1.0
10
0.1
5.0
4.0
MZ2362
.4M.64FR10
.4Ml.36FR5
.4M1.36FR2
.4M2.04FR5
.4M2.04FR2
lN816
IR~VR
"A Volts
1
l
O..,1ce
Type
e_
59
Surmetlc
51
Surmetic
51
Glass
.j
Transient Suppressors
Transient suppressors designed for applications requiring protection of voltage sensitive
electronic devices in danger of destruction by high energy voltage transients. Select from
standard factory available types or design the suppressor to meet specific needs by paralleling
cells. For specific options, i.e., non·standard voltages, higher powe( capacity, and package
configurations, consult factory.
Ipp
..,I"
~
~
10
20
3D
40
TlIllt_(m!l
so
60
CASE 119
IR
"
R_
VR
Operath1g Vol_ CUI't.nt
Ni>m'
"....
•
14
14
28
28
28
165
165
165
AVi
8rwkdOW\"I Voltage
Min
\lIRMS!.
"A
Volts
10
10
20
20
20
117
117
117
50
16
16
32
32
32
180
180
180
I
@
Ve
Clampillg \lolUige
,
Mall
IZT
rnA
Volts
0.4 .
0.4
0.2
0.2
0.2
0.03
0.03
0.03
24
20
50
45
40
250
225
205
9-12
•
Ipp.
Amp
200
200
100
100
100
20
20
20
VF
FDtWaI'd V"ltag8
Volt.
1.5
@
IF
Amp
10
II
O"'IceType
MPZ5·16A
MPZ5·16B
MPZ5·32A
MPZ5·32B
MPZ5·32C
MPZ5·180A
MPZ5·180B
MPZ5·180C
e-.
119
I
supplementary Literature
10-1
II
III
10-2
SUPPLEMENTAL LITERATURE
The following documents may provide additional information for your circuit designs.
Copies may be obtained from Motorola Semiconductor Products Inc., Literature Distribution Center, P.O. Box 20924, Phoenix, AZ 85036.
POWER SUPPLY CIRCUIT DESIGN
AN-719 A New Approach to Switching
Regulators
AN-767 A Line Operated, Regulated
5V 150A Switching Power Supply
This article describes a 24-Volt, 3-Ampere
switching mode supply. It operates at 20 kHz
from a 120 Vac line with an overall efficiency of
70%. New techniques are used to shape the load
line. The control portion uses a quad comparator
and an opto coupler and features short circuit
protection.
This application note describes a regulated
220V ac to 5 Vdc converter using high voltage
switching transistors and Schottky barrier rectifiers. The control functions are all performed by
integrated circuits.
AN-786 Power Darlington Load Line
Considerations
AN-725 A Low-Cost 80 V-1.5 A Color TV
Power Supply
Power Darlington load lines are discussed in
the light of a typical application of a Switchmode
Darlington power transistor. Darlington advantages are reviewed and the test circuit is
introduced. Load line analysis revealed a reverse
bias SOA problem and just enough snubbing
was used to insure reliability without unduly sacrificing efficiency.
A full-wave SCR power supply is proposed
for application in line operated color television
receivers. Economy of design is maintained while
providing good regulation against line, load and
temperature changes.
AN-737A Switched Mode Power
Supplies-Highlighting a 5-V, 40-A
Inverter Design
EB-52 Control Your Switching Regulator
With The MC3380 Astable Multivibrator
This application note identifies the features of
various regulator circuits that are in use today in
AC to DC power supplies. The note also illustrates how these circuits may be used as
complementary building blocks in a system design. Primary emphasis is on switched mode
regulators beause they fill the present need for
energy and space savings.
A complete 5-V, 40-A line operated inverter
supply is described in detail including 'design
procedures for the magnetic components. The
inverter itself is a "state-of-the-art" design which
features CMOS logic, high voltage power transistors, Schottky rectifiers and an opto-electronic
coupler. It operates with a full load efficiency of
80% at a frequency of 20kHz.
Engineering Bulletin EB-52 describes the
operation and characteristics of the MC3380
astable multivibrator and details the design of a
200 volt switching regulator circuit for gas discharge displays using this device as the control
element.
EB-66 A Symmetry Correcting Circuit
for Use with the MC3420
EB-66 shows a method of implementing "an
external symmetry-correction circuit with the
MC3420 Switch mode Regulator Control IC to
insure balanced operation. of the power transformer in push-pull inverter configurations.
MC3420/3520 Switch mode Regulator
Control Circuit
AN-752 An 80-Watt Switching Regulator
for CATV and Industrial Applications
The MC3520/3420 is an inverter control unit
which provides all the control circuitry for PWM
push-pull, bridge and s~ries type Switch mode
power supplies.
This application note describes a 24-Volt, 3Ampere switching, regulated power supply that
operates above 18 kHz from a 40-to 60-Volt, 60Hz square wave source (CATV power line from a
ferroresonant fransformer) or a dc standby
source with input output isolation. The control
circuit consists of a dual operational amplifier
and a linear integrated circuit timer which are
used to vary the on time of a new high-speed
power transistor. The circuit provides good efficiency, good regulation, low output ripple and
incorporates input and output voltage over shutdown protection.
TL494/495 Switchmode Pulse Width
Modulation Control Circuits
The TL494 and TL495 combine the best features of existing PWM control circuits and add
other on-Chip functions. These devices provide,
on a single monolithic chip, all the control circuitry for PWM push-pull, bridge and series type
switch mode power supplies.
10-3
AUDIO CONTROL CIRCUIT DESIGN
AN-240 SCR Power Control
Fundamentals
AN-705 Pulse Width Modulation for
Small DC Motor Control
Relationships of control angle to peak voltage, average voltage, RMS voltage and power
are presented in chart form. Time constants for
relaxation oscillators are discussed for both DC
and AC supplies. These basic form the heart of
SCR control.
This application note explains the use of
modern pulse width modulation techniques as an
efficient and economical solution to sin all DC
motor control. Several practical circuit design
approaches using discrete, operational amplifier
and integrated circuit devices are described and
illustrated.
AN-483B 20 and 30 Watt Power
Amplifiers Using Darlington Output
Transistors
AN-712A Interface Techniques Between
Industrial Logic and Power Devices
Use of monolithic power Darlington output
transistors can greatly simplify the design of
highfidelity amplifiers. Described herein is a 20Watt amplifier which uses only three transistors,
and a 30-Watt amplifier which uses four.
This application note presents worst case
design approaches to illustrate the methods 0.1
interfacing McMOS and MHTL logic to various
power load levels, both ac and dc. Interface devices vary from small-signal transistors to power
transistors and thyristors, using direct couplingllevel translation and optoelectronic coupling techniques.
AN-484A Medium-Power Audio
Amplifiers
This note describes a basic circuit design
approach for audio complementary power amplifiers. Procedures are detailed for the selection of
input, driver and output tran~istors. Both simple
and Darlington transistor systems are included.
Biasing, thermal considerations, overload pro'tection and power supply information is given
extensive treatment.
DeSign examples, including all circuit values,.
performance data and and suggested P.C. board
layouts, are given for Simple tranasistor am,plfiers at the 3,5, 7, 10, 15,20,25, and 35 Watt
levels. Also included are three amplfiers using Darlington output transistors at the 15, 20, and
25 Watt levels.
,I
AN-755 Solid-State Relays for AC Power
Control
Solid-State Relays (SSRs) using both SCRs
and Triacs are examined in detail. The advantages
and
disadvantages of SSRs compared with electromechanical relays are discussed. Inductive loads
are reviewed and snubbing suggestions made.
Parts lists are given for SSRs for voltages of 120
and 240 V rms and currents from 5 to 113 A
rms. Also described are circuits to give ac and
CMOS compatibility.
AN-766 A Variable Frequency Control for
AN-485 High-Power Audio Amplifiers
with Short-Circuit Protect jon
30 Induction Motors
_This application note describes a recommended circuit approach for high-performance
audio amplifiers in the 35-Watt to 100-Watt RMS
power range. Circuitry is included which enables
the amplifier to operate safely continuously under any load condition including a short.
This application note describes a variable
variable voltage drive system for three-phase
induction motor controls. A survey of possible
system configurations and a detailed description
of a semi-converter/transistor inverter quasisquare wave drive system are incJuded.
10-4
POWER TRANSISTORS
AN-S69 Transient Thermal
Resistance - General Data and Its Use
AN-78S Reverse Bias Safe Operating
Area
Data illustrating the' thermal response of a
number of semiconductor die and package
combinations are given. Its use, employing the
concepts of transient thermal resistance and
superposition, permit the circuit designer to predict semiconductor junction temperature at any
point in time during application of a complex
power pulse train.
The rating of high voltage, high speed switching transistors for safe turn-off operations is
examined. Clamped inductive turn-off measurements are used to generate a switching
RBSOA-reverse bias safe operating areawhich can be used in conjunction with load line
analysis to assure proper transistor operation.
The effects of inductance, temperature, base
turn-off conditions and forward base drive on
RBSOA are included in the discussion.
AN-778 Mounting Techniques for Power
Semiconductors
EN-101 Verifying Collector Voltage
Ratings
For reliable operation, semiconductors must
be properly mounted. Discussed are aspects of
preparing the mounting surface, using thermal
compounds, insulation techniques, fastening
techniques, handling of leads and pins, and evaluation methods for the thermal system.
Methods of verifying the various voltage ratings given on transistor data sheets are
described. Practical test circuits are given and
testing problems are discussed. A detailed ~iS
cussion of the avalanche breakdown mechanism
and the Significance of various voltage ratings is
also included.
THYRISTORS
AN-S68 A Fuse-Thyristor Coordination
Primer
AN-466 Circuit Applications for the Triac
This note discusses the basic theory of operation of the triac with control methods and
circuit applications. Among the applications included are basic switches, lamp dimmers, motor
controls, a heater control, a flasher, a regulator,
protective circuits and zero-point switching.
This report treats the considerations required
for the use of fuses in protecting thyristors
against short circuit fault currents. Basics of .the
mating philosophy are discussed and practical
examples of coordination are given. Symbols,
terms and their definitions are included.
ZENER DIODES
AN-784 Transient Power Capability of
Zener Diodes
Because of the sensitivity cif semiconductor
components to voltage transients in exceSs of
their ratings, circuits are often designed to inhibit voltage surges in order to protect
equipment from catastrophic failure. This note
discusses the power capability of zener diodes
for transient suppression.'
10-5
10-6
®
MOTOROLA Semiconductor Products Inc .
. BOX 20912 . PHOEWX . ARIZONA 85036 . A SUBSIDIARY OF MOTOROLA INC.
Source Exif Data:
File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.3 Linearized : No XMP Toolkit : Adobe XMP Core 4.2.1-c041 52.342996, 2008/05/07-21:37:19 Create Date : 2017:06:17 12:41:05-08:00 Modify Date : 2017:06:17 13:23:42-07:00 Metadata Date : 2017:06:17 13:23:42-07:00 Producer : Adobe Acrobat 9.0 Paper Capture Plug-in Format : application/pdf Document ID : uuid:4da3973c-c10a-1949-a0ec-6aee33cc8eac Instance ID : uuid:81b5af97-c35f-df41-91fd-c448cb65e55e Page Layout : SinglePage Page Mode : UseNone Page Count : 1022EXIF Metadata provided by EXIF.tools