1979_IND500_Sprague_Integrated_Circuits_Vol_1 1979 IND500 Sprague Integrated Circuits Vol 1
User Manual: 1979_IND500_Sprague_Integrated_Circuits_Vol_1
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Integrated
Circuits
• POWER DRIVERS
• DISPLAY DRIVERS
• DARLINGTON ARRAYS
• MOS AND BIMOS CIRCUITS
SPRJlGUE
THE MARK OF RELIABILITY
INTEGRATED CIRCUITS
DATA BOOK - VOL. 1
Second Edition
DIGITAL INTERFACE CIRCUITS
•
.•
•
•
•
•
POWER DRIVERS
DISPLAY DRIVERS
TRANSISTOR ARRAYS
DARLINGTON ARRAYS
MOSAND BIMOS CIRCUITS
SPECIAL" CIRCUITS
SPRAGUE ELECTRIC COMPANY
EXECUTIVE OFFICES: North Adam., Ma•••
01247
OPI~ATIONSI SEMICONDUCTOR DIYISION
115 Northeast Cutoff • Worcester, M.... 81606 • 617/853·5000
INTEGRATED CIRCUIT
Copyright ©. 1978 and 1979 Sprague Electric Company. North Adams. Mass.
GENERAL INFORMATION, INDEX TO ALL DEVICES,
INTERCHANGEABILITY GUIDE, HOW TO PLACE AN ORDER
D
SPRAGUE FACILITIES ...
.. ......... ..
INDEX TO All DEVICES ............. . .......... .
DEVICE SElECTION. . . . .
. ........... .
HOW TO PLACE AN ORDER . . . . . . . . . . . . .. . ........ .
SHIPPING INFORMATION ....
PRODUCTION/QA FLOW CHART
INTERCHANGEABILITY GUIDE
1-1
.. ........ 1-2
· ......... 1-3
· ......... 1-4
.. ........ 1-6
. ........ 1-7
....... 1-8
· ........ 1-10
GENERAL INFORMATION
The Integrated Circuits Operations of the Sprague
Electric Semiconductor Division is headquartered in
a 140,000 square foot modern plant in Worcester,
Mass. Discretecomponents, such as transistors and
diodes and Hall Effect integrated circuits, are
manufactured at the Division's Concord, N. H.
plant, which occupies some 30,000 square feet of
floor space.
Sprague Electric is a leading manufacturer of
volume specialty circuits for the consumer, industrial
controls, and peripherals markets.
Production
process technologies include P-Channel and complementary metal-gate MOS, high voltage and highcurrent bipolar and high-performance bipolar linear.
This breadth of process technology makes it possible
for Sprague Electric to manufacture optimum costperformance integrated circuits.
INTEGRATED CIRCUIT OPERATIONS, Worcester, Massachusetts
TRANSISTOR OPERATIONS, Concord, New Hampshire
. Sprague Facllltle.
fabrication is in this plant as are all services integral
to its support. Volume assembly operations are
located both in Worcester and in Manila, Phillipines.
Marketing and sales offices and sales representatives
are located throughout the United States and
Canada, Latin America, Europe, Japan, and other
countries in Africa and the Far E~st.
The Sprague Electric Company manufactures active and passive components in 17 locations in the
United States and 5 countries in Europe and the Far
East. Headquarters of the Semiconductor Division
are located in the Worcester, Mass. plant shown in
the photograph.
All semiconductor wafer
1-2
Index to All Devices (in numerical order)
Applications
Data
2·8
UHC-400 thru 433·1
UHD·400 thru 433·1
2·8
UHp·400 thru 433·1
7·15
2·2
UHp·480 and 481
3·2
7·4
UHp·482
3·2
UHD-490 and 491
3·5
UHP·490 and 491
7·4
3·5
UHP·495
3·7
2-8
UHC-500 thru 533
UHD·500 thru 533
2·8
7·7,16
UHP·500 thru 533
2·2
TPp·IOOO and 2000
4·81
7·2,6,35,42
UlN·2001 thru 2025A
4·2
UlN·2001 thru 20I5R
see UlN·200I thru
20l5A
UlS·200 1 thru 2025H
4·11
UlS-2001 thru 2015R
4·11
UlN·2031 thru 2033A
4·22
7·6
UlN·203I thru 2033R
see UlN·2031 thru
2033A
UlS-2045H
4·24
see UlS·2045H
UlS·2045R
UlN·2Q46A
4·24
UlN·2046A·I
4·26
UlN·2047A
4·27
UlN·2054A
4·28
UlN·2061 and 2062M
4·31
1·24
UlN·2064 thru 2077B
4·31
7·5,32
7·6,37
UlN·2081 and 2082A
4·42
4-43
UlN·2083A
UlN·2083A·I
4-45
UlS·2083H
4·43
UlN·2086A
4·45
see linear Data
UlN·2l10 thru 2136A
Book
UlN·2I39D and 2139M
6·2
UlS·2139D and 2139M
6·2
UlN·2140A
6-4
UlS·2140H
6·4
UlN·2151D and 2151M
6·7
UlS·2151D and 2I51M
6·7
ULN·2171D and 2171M
6·9
ULS·2171D and 217lM
6·9
UlN·2204 thru 2220A
see linear Data
Book
TPQ-222I
4·83
ULN·222IA
see li near Data
Book
TPQ-2222
4·83
ULN·2224 thru 2298A
see linear Data
Book
UlN·2300M
6·11
UlN·2301M
see ULN·2300M
UlN·240I thru 2430M
see linear Data
Book
TPQ·2483 and 2484
4·83
UDN·2540B
2·13
UDN·2580A
4·46
UDN·2580R
see UDN·2580A.
ULN·260IA
see Linear Data Book
*Thermal data is given in the curves on page 7·60.
Device Type
...::u, .,... &)11".,_"
Thermal"
40
4B
IB
IE
ID
4D
IE
IE
4D
4B
IB
Device Type
UlN·2801 thru 2825A
UlN·2801 thru 2815R
UlS·2801 thru 2825H
UlS·2801 thru 2815R
UDN·2841 thru 2846B
TPQ·2906 and 2907
UDN·2956 and 2957A
UDN·2956 and 2957R
UDN·2981 thru 2984A
UDN·2981 thru 2984R
IB
38
4B
3A
IE
3B
4B
38
IE
IE
IE
IE
IC
2
IE
IE
IE
4B
IE
IE
IE
4B
IE
TPP·3000
UlN·3303 thru 3330Y
UGN·350IM and 350lT
UDN·3611 thru 3614M
UDS·3611 thru 36l4H
UlN·370I and 3702Z
TPQ·3724 thru 3799
UlN·380IQ
TPQ-3904 and 3906
UCN·4103A
UCN·4105A
UCN·4112A and 4112M
UCN·41l6M
UCN·4123M
UlN·4I36 thru ~36A
UCN·440IA
UlN·4436A
UCN·480IA
UCN·4805A
UCN·4806A
UCN·4810A
UCN·4815A
UDN·5703 thru 5707A
UDS·5703 thru 5707H
UDN·5711 thru 5714M
UDN·5733A
UDS·5733H
UDS·5790 and 5791H
TPQ·6001 thru 6100A
UDN·6I16A and 6116A·2
UDN·6116R and 6116R·2
UDN·6118A and 6118A·2
UDN·6118R and 6118R·2
IE
IE
2
IA
3A
IE
UDN·6126A and 6126A·2
UDN·6126R and. 6126R·2
UDN·6128A and 6128A·2
UDN·6128R and 6I28R·2
UDN·6I44 and 6164A
UDN-6I84A
TPQ·6S0I thru 6700
UDN·7180 thru 7186A
",",
Data
Applications Thermal*
4·50
IA
see UlN·2801 thru
2815A
3A
4-60
4A
4·60
3A
4·71
7·36
2
4·83
4·77
7·36
IB
see UDN·2956 and
2957A
38
4·79
7·6,39
lA
see UDN·2981 thru
2984A
3A
4·81
see linear Data
Book
see linear Data
Book
2·19
7·21
Ie
2·14
4C
see linear Data
Book
4·83
see linear Data
Book
4·83
5·3
5-4
5·5
5-7
5·3
6·17
IE
5·9
IB
6·17
IE
5·9
5·12
IA
5·12
IA
5·16
IA
5·19
2·23
7·2,19
IB
2·21
4B
2·32
7·49
Ie
2·26
18
2·30
4B
2·37
4B
4·83
3·9
IE
see UDN·6II6A and
6116A·2
38
3·9
ID
see UDN-6118Aand
6118A·2
3A
3·9
IE
see UDN·6I26A and
6126A·2
3B
3·9
ID
see UDN·6I28A and
6I28A-2
3A
3·13
7·4,27
IE
3·13
ID
4·83
3·17
7·327
Ir·,""~"''''-'''''''''I'l''I''I''l'''''''''~''''''''''""'''.'-''''''"<-
0
.'..... - .... ' __ .. -,.,R', '""'~"'c,,,"("·.r, .. ,.-,.,.,,"',~, --" •. _''''~ '-.' ,. ,-,_"_, ,
GENERAL INFORMATION (Cont.)
(SINK)
1.6A
I
e
UDN-284112842J4/H)
- 112 UDN-2845/2846 (2/H)
----1----
1.4A
1.2A
LIMITING
AND/OR
SHIFTING
lA
0.5A
0.4A
0.3A
0.2A
O.IA
14mAeUDN-7180 (8/H)
1-2rnAeUDN-7183 thru UDN-7186
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
,
-v
-l5mA e
UHP-490 (5/H)
UHP-491 (6/H)
UHP-495 (6/L)
-O.IA
-0.211
-0.3A
e
e
UDN'-~966/2!157 (5/H)
UDN-25BO (8/l)
-O.4A
-0.5A
LIMITING
AND/OR
SHIFTING
-lA
-1.2A
-1.4A
UDN-2843/2844 (4tH)
112 UDN-2845/2846 (2tH)
e
--1.6A
(SOURCE)
1-4
GENERAL INFORMATION (Cont.)
(SINK)
+1
UDN-2540 14/H)
1.6A
~I
lAA - - - + - - - - - - j - - - - - - - j - - -
I
1.5JSERIES
UlN-2062M 14/H)
thru
ULN-2077B 14/H)
I
1.25A .SERIES
UlN-2061 M 14/H)
thru
UlN-2076B (4/H)
l.2A
-L
lA
I
0.5A
.SERIES
UlN-2011-2015
(7/H)
UlN-2811-2815 (8/H)
OAA
f5
I
UCN-4401 (4/H)
UCN-4801 (8/H)
• SERIES
'
UlN 2001 2005 (7/H)
ULN-2801-2805 (8/H)
• SERIES
SERIES.
UHP-400 (4/H, L)
UHP-4oo-1 (4/H, l)
I
0.3A
+
LIMITING
AND/OR
SHIFTING
• SERIES
ULN-2021-2025 (7/H)
• SERIES ULN-2821-2825 (8/H) •
UDN-3600M.,
UDN-5700A
UDN-5700M
SERIES
----i------r-r-----It----I
I
·
0.2A -ULN-2081
- • (7/H)
0.1 A
UDN/S-5790/91 (4/L, H)
UHP-500 (4/H, l)
UHP-480 (5/H)
UHP-481 (7/H)
UHP-482 (8/H)
UlN-2031 (7/H)
10
20
40
30
60
70
90
100
110
~~.
130
120
,
20mA •
UDN-6144 (4/H)
thru
UDN-6184 (8/H)
25mA •
UDN-6116 (6/H)
thru
UDN-6128 (8/H)
ULN-2032 (7/l)
-0.2A - - •
80
,
•
25mA
UCN-4815 (8/H)
•
-O.lA
50
+v
----+------+------i------+-----+--
ULN-2082 (7/H)
-0.3A
•
•
-OAA _ _--t-_ _ _ _ UDN-2981/2982 (8/H)
UDN-2983!2984 (8/H)
I
-0.5A
LIMITING
AND/OR
SHIFTING
-lA
EXAMPLE:
-1.2A
UDN-2981/2982A (8/H)
~
-l.4A
I
!- -
-1.6A
SOURCE)
-I
HIGH INPUT
ACTIVE ON
LOWINPUT
ACTIVE ON
N= NUMBER
OF CHANNELS
PER DIP
1-5
._----0+
D
GENEUL INFORMATION (Cont'd)
How to Place an Order
UL N .
2046
A. 1
T. . . ___
INSTRUmONS.
1 == SELECTED VERSION, SEE DETAIL SPECIFICATIONS
MIL = MILITARY GRADE WITH SCREENING TO MIL-STD-883, CLASS B (HERMETIC
PARTS ONLY).
' - - - - - PACIAGE DESIGNATION.
A= PLASTIC, 14-, 16-, 18-, or 22-PIN DUAL IN-LINE
B= PLASTIC, 16-PIN WEBBED DUAL IN-LINE
C= CHIPS OR WAFERS
D= METAL CAN, 8-PIN
H== HERMETIC, 8-, 14-, 16-, or 18-PIN DUAL IN-LINE
J == HERMETIC, 14-PIN FLAT PACK
K= METAL CAN, 10-PIN
M= PLASTIC, 8-PIN DUAL IN-LINE
. R= HERMETIC, 14-, 16-, or IS-PIN DUAL IN-LINE
T == PLASTIC, 3-LEAD
' - - - - - - DEYla TYPE (ALWAYS FOUR DIGITS).
' - - - - - - - _ OPEUTING AMBIENT BMPEUTURE UNGE.
N- COMMERCIAL/INDUSTRIAL
S = FULL MILITARY/EXTENDED INDUSTRIAL
......- - - - - - - FAMILY
UC == CMOS, BiMOS, AND 12L
UD == DIGITAL DRIVERS
UG = HALL EFFECT DEVICES
UL = LI NEAR DEVICES
UH
D .
400
.
1
L
INSTIUatONS.
1 ... SELECTED VERSION, SEE DETAIL SPECIFICATIONS
MIL ... MILITARY GRADE WITH SCREENING TO MIL-STD-883, CLASS B (HERMETIC
PARTS ONLY).
' - - - - - - - - DEYla TYPE (ALWAYS THREE DIGITS).
' - - - - . . . ; . . . . - - - _ PACIAGE DESIGNATION
C= HERMETIC, 14-PIN FLAT PACK
D== HERMETIC, 14- or 16~PIN DUAL IN-LINE
P= PLASTIC, 14-, 16-, OR 18-PIN DUAL IN-liNE
'----------FAMILY
1-6
GENERAL INFORMATION (Cont'd)
!-low Int.grated. Circuits are Shipped
'Integrated circuits are shipped in one of these
carriers: .
,Slide Magazine
A-Channel Plastic Tubing
A-Channel Metal ~ubing·.
Barnes Carrier
D
IndiVidual Plastic Box
Integrated circuit chips are shipped in either linscribelf\vafer form or individually partitioned in ~
see-through plastic box .
.Qual1!y Control and Reliobillty
The Sprague Electric Company conducts a continuingreliabilityassurance program to detect
deviations in device characteristics. Test samples are
. taken at random from. each lot and are subjected to
testing for performance evaluation. Periodically,
finished test samples are subjected to all electrical
perf9Tmance requirements. A copy of the quality
conttof inspection plan used for specific integrated
circuits is available upon request.
An critical points. in the ma'nufacturingprocesses
Of Sprague, Electric integrated circuits are carefully
monitored; for compliance to engineering
speCifications. Electrical tests are made on 100070 of
the parts by automatic testers. Lot sampling asslires
'tneeting2ristomer A.Q.L. requiremc;nt§.Calibration
of test standards and equipment is performed at
periodic intervals in order to maintain test accuracy.
1-7
GENERALINFORMAIION (Cont'd)
CHEMICALS, GASES, HARDWARE
WAFERS
RAW MATERIALS
MASKS
-
QUALITY ASSURANCE
PROCUREMENT REVIEW
VENDOR CONTROL
INCOMING INSP.
~
NEW PRODUCT DESIGNS
AND CURRENT DESIGNS,
NEW-CURRENT PROCESSES,
NEW MATERIALS
-
RELIABILITY ENGINEERING
DESIGN,
INTRODUCTION
(SEM)
EVALUATION,
QUALIFICATION
DOCUMENTATION OF:
CHEMICALS, HARDWARE
GASES, MASKS
PROCESSES, DESIGNS, ETC.
-
PRODUCT ASSURANCE
DOCUMENTATION CENTER
~
PRODUCT-PROCESS
AND PROCUREMENT SPECS.
QA IN-PROCESS
AUDIT
QA IN-PROCESS
AUDIT
S.E.M. INSPECTION
I
I
WAFER
FABRICATION
~
METALIZATION
~
@
TOLLGATE
INSP.
HERMETIC PKG.
QA AUDIT
MIL-STD-883
METHOD 5004.3
OR CUSTOMER REQ.
QUALIFICATION
OF CONFORMANCE
MIL-STD-883
METHOD 5005.3 OR
CUSTOMERS REQ.
STOCK
1-8
GENEUL INFORMATION (Cont'cI)
IOOf,. VISUAl
INSPECTION
QA ·1 N PROCESS
AUDIT
PROBE, SCRIBE
SORT
DIE ATIACH
WIRE BOND
lOOf, VISUAL
INSPECTION
D
PRODUCTION/QA FLOW CHART
1-9
GENERAL INFORMATION (Cont'd)
INTERCHANGEABILITY GUIDE
The suggested Sprague replacement devices are based on similarity as shown in currently published data. Exact
replacement in alJ applications is not guaranteed and the user should compare the specifications of the original
and recommended equivalent.
Use
Sprague
Type
To
Replace
DIONICS
01302
01502
01507
01509
01512
01514
UDN-7J84°
UDN-6144
UDN-6164
UDN-6116°
UDN-6184
UDN-6118*
EXAR
XR2001
XR2002
XR2003
XR2201
XR2202
XR2203
XR2204
ULN-2001
ULN-2002
ULN-2003
ULN-2001
ULN-2002
ULN-2003
ULN-2004
FAIRCHILD
FPQJAA741
JAA3045
JAA3046
JAA3054
JAA3086
9665
TPQULN-2151
ULS-2045
ULN-2046
ULN-2054
ULN-2086
ULN-2001
9666
9667
9668
ULN-2002
ULN-2003
ULN-2004
In
512
552
554
556
652
654
656
To
Replace
Use
Sprague
Type
MOTOROLA
MCI411
MC1412
MCI413
MCI439
MCI471
MCI472
MCI473
MC1474
MCI539
MC1741
MPQ-
ULN-2001
ULN-2002
ULN-2003
ULN-2139
UDN-57JJ
UDN-5712
UDN-57J3
UDN-5714
ULS-2139
ULN-2151
TPQ--
NATIONAL
LM741
LM3611
LM3612
LM3613
LM3614
ULN-2151
UDN-3611
UDN-3612
UDN-3613
UDN-3614
PLESSEY
SL3045
SL3046
SL3054
SL3081
SL3082
SL3083
SL3086
SL3145
SL3146
SL3183
ULS-2045
ULN-2046
ULN-2054
ULN-2081
ULN-2082
ULN-2083
ULN-2086
ULS-2045
ULN-2046-1
ULN-2083-1
Use
Sprague
Type
To
Replace
RCA
ULS-2045
ULN-2046
ULN-2054
ULf'f-2081
ULN-2082
ULN-2083
ULN-2086
ULN-2046-1
ULN-2083-1
CA3045
CA3046
CA3054
CA3081
CA3082
CA3083
CA3086
CA3146
CA3183
RC741
RC4136
RC4236
RC4336
RC4436
RM741
ULN-2151
ULN-4136
ULN-4236
UlN-4336
UlN-4436
ULS-2151
Use
Sprague
Type
SILICON GENERAL
(Cont.)
SG3082
SG3086
SG3217
SG382JJ
SG3821N
SG3822
SG3886
ULN-2082
ULN-2086
ULN-2151
ULS-2045
ULN-2046
ULN-20S4
ULN-2086
RIFA
PBD352301
PBD352302
PBD352303
ULN-2001
ULN-2002
ULN-2003
SGS
ULN-2001
ULN-2002
ULN-2003
L201
L202
L203
SIEMENS
TBA22 I
ULN-2151
SIGNETICS
NE584-8
NE585-6
UDN-7180 o
UDN-6164°
RAYTHEON
UHP-491
ULN-2001
ULN-2002
ULN-2003
ULN-2001
UlN-2002
UlN-2003
To
Replace
SILICON GENERAL
SG2001
SG2002
SG2003
SG2004
SG3081
UlN-2001
UlN·2002
UlN-20OJ
UlN-2004
ULN-20BI
TEXAS
INSTRUMENTS
SN52741
SN72741
SN75451
SN75452
SN75453
SN75454
SN75461
SN75462
SN75463
SN75464
SN75466
SN75467
SN75468
SN75469
SN75471
SN75472
SN75473
SN75474
SN75476
SN75477
SN75478
SN75479
ULS-2151
ULN-2151
UDN-3611"
UDN-3612··
UDN-3613°·
UDN-3614··
UDN-3611··
UDN-3612· O
UDN-3613··
UDN-3614°·
ULN-2021
ULN-2022
ULN-2023
ULN-2024
UDN-3611· O
UDN-3612··
UDN-3613· o
UDN-3614··
UDN-5711
UDN-5712
UDN-5713
UDN-5714
• Suggested replacement devices contain pull-down resistors or OFF-bias references. Other devices within the same Sprague series
indicated may be more suitable for specific applications.
•• Some differences in specified switching speed with the Sprague device being superior for use with inductive
loads.
1-10
Q
POWER/PERIPHERAL DRIVERS
DUALS AND QUADS TO 120 V or 1.5 A
~-
Device Type
Data
UHC-400 thru 4~3·1
UHD-400 thru 433·1
UHP-400 thru 433·1
UHC-500 thru 533
UHD-500 thru 533
UHp·500 thru 533
UDN·2540B
UDS-3611 thru 3614H
UDN·3611 thru 3614M
UDN·5703 thru 5707A
UDS-5703 thru 5707H
UDN·5711 thru 5714M
UDN·5733A
UDS-5733H
UDS-5790 and 5791H
2-8
2·8
2·2
2-8
2-8
2·2
2·13
2·14
2·19
2·23
2·27
2·32
2·26
2·30
2·37
4D
4B
IB
4D
4B
IB
2
4C
lC
IB
4B
lC
IB
4B
4B
7·15
7·7, 16
7·21
7·2, 19
7·19
Device Type
UH( ~OO thru 433
UH( ~OQ.l thru 433·1
UH( r500 thru 533
UDN·2540B
UD( r3611 thru 3614H/M
UD( r5703 thru 5707 A/H
UDN·5711 thru 5714M
UIl( r5733A/H
UDS-5790 and 5791H
Thermal
Applications
lOUT
Your
Outputs
500 rnA
500 rnA
500 rnA
1.5 A
600 rnA
600 rnA
600 rnA
600 rnA
500 rnA
40 V
70 V
100 V
60 V
80 V
80 V
80 V
80 V
120 V
Sink 4
Sink 4
Sink 4
Sink. 4
Sink 2
Sink 4
Sink 2
Sink 4
Sink 4
2-1
D
SERIES UHP·400, UHP·400·1, & UHP·SOO
SERIES UHP-400, UHP-400-1, & UHP-500
POWER and RELAY DRIVERS
- PLASTIC ENCASED
a"
,
UHP-400/.coo-I/500
Quad 2 AND
FEATURES
•
•
•
•
•
Inputs Compatible with DTL/TTL
500mA Output Sink Current Capability
Pinning Compatible with 54/74 Logic Series
Transient Protected Outputs on Relay Drivers
High Voltage Output - IOOV Series UHP·500, 70V Series
UHP·400·I, 40V Series UHp·400
.~
'
ti1
UHP·402/402.1/502
Quad 2 OR
,
UHP·..,/403·1/103
Quad OR
UHP-406/.... i/S06
Quad AND
I:IHP·407/407·I/507
Quad NAND
UHP·40114OI·1/SOI
Quad 2 NAND
UHp·0d2/0d2·1/532
Quad 2 NOR
UHP·.Q3/a3-1/533
Quad NOR
Description
These power and relay drivers are bi·polar monolithic circuits and incorpor·
ate logic gates and high·current switching transistors on the same chip. Each
output transistor is capable of sinking 500mA in the ON state. In the OFF
state, Series UHP·400 devices will sustain 4OV, Series UHP·400·1 devices'
will sustain 70V, and Series UHP·500 devices will sustain IOOV.
Applications
The UHP·400, UHP-400-J, and UHP-500 Series Power Drivers are ideally
suited for driving incandescent lamps, relays, solenoids, and other interface
devices with up to IA output current per package.
ABSOLUTE MAXIMUM RATINGS'
Supply Voltage, Vee ..................... ' .. , ..................................................................... 7V
Input Voltage, Vin : . . . . . . . . . . . . " . .
......................
. .._ . . . . . . . . . . . . . . s.sv
Output Off·state Voltage, Volf :
Series UHp·400.
..........
. .. 40V
Series UHp·400·1.. ....,................... .
............................................
. .. 70V
Series UHp·500 ...................... .
.............................. . .... IOOV
Output On·State Sink Current, I"" ........ .
. .................................................. 500mA
Suppression Diode Off· State Voltage, Volf '
Series UHp·400. . ......
. ........................................... 40V
Series UHp·400·1....... ......... .. .........
. .................................................. 70V
Series UHp·500. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. ................................................. 100V
Suppression Diode On·State Current, 100 " • • • . . • . • •
. • . . • . • • . . • . . • . . • . • • • . • . . • . . • . . • • . • . • • • • • • • • • • • • • • • • • . • . • 500mA
Operating Free·Air Temperature Range, TA . •
. . . . . . . . . . . . . . . ... ...•... . . . . . . . . . . ...
. . . . . . . . . O°C to +70°C
Storage Temperature Range, Ts ..................................................................... -65°C to +150°C
2-2
SERIES UHP·400, UHP.400·1, & UHP·SOO (Cont'd)
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (Vee):
,OQerating Tem~erature Range
Current into any output (ON state)
Min.
Nom.
Max.
Units
4.75
0
5.0
+25
5.25
+70
250
V
"C
mA
ELECTRICAL CHARACTERISTICS:
(over operating temperature range unless otherwise noted)
Test Conditions
Characteristic
Symbol
"1" Inout Voltage
"0" Input Voltage
"0" Input Current at all Inputs
excepJ Strobe
"0" Input Current at Strobe
"1" Input Current at all Inputs
exceol Strobe
"1" Input Current at Strobe
VI,IU
Vin 0
Temp.
MIN
MIN
1;,[01
11,101
11,11)
MAX
MAX
MAX
MAX
MAX
MAX
Vee
11,111
Driven
Input
Limits
Other
Input
Output
Min.
Typ.
Max.
Units
2.0
0.8
0.4V
0.4V
2.4V
5.5V
2.4V
5.5V
4.5V
4.5V
-0.55
-1.1
OV
OV
OV
OV
Notes
V
V
-0.8
-1.6
40
I
100
1
mA
mA
2
"A
mA
2
"A
mA
2
SWITCHING CHARACTERISTICS: Vec
Characteristic
Turn-on Delay Time
Series UHP·400
Series UHP·400·1
Series UHP·500
Turn-off Delay Time
Series UHP-400
Series UHP-400-l
Series UHP-500
Symbol
tpdO
Test Conditions
Min.
Typ.
Vs = 40V, Rl = 265!! (6 Watts)
Vs = 70V, Rl = 465 II (10 Watts)
Vs = 100V, Rl = 670!! (15 Watts)
200
Limits
Max.
500
Units
Notes
ns
3
ns
3
Cl=15pF
tpdl
Vs = 40V, Rl = 265!! (6 Watts)
Vs = 70V, Rl = 46511 (10 Watts)
Vs = 100V, Rl = 670 I! (15 Watts)
300
Cl=15pF
INPUT PULSE CHARACTERISTICS
VI,Iol
VI,ll)
=
OV
=
3.5V
tf = 7ns
t, = 14ns
tp
PRR
= I"s
= 500kHz
NOTES:
1. Typical values are at Vee = S.OV, TA = 25°C.
2. Each input tested separately.
.
.
3. Voltage values shown in the test circuit waveforms are with respect to network ground termrnal.
4. Capacitance values specified include probe and test fixture capacitance.
2-3
750
SERIES UHP·400, UHP·400·1, & UHP.SOO(Cont' d)
Type UHP..400, UHP..400..1, and UHP..SOO Quad 2.. lnput AND Power Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Test Conditions
Driven
Input
Vcc
Other
Input
Output
I off
MIN
2.0V
2.0V
40V
50
/loA
Symbol
Temp.
Limits
Min.
Typ.
Max.
Units
"1" Output Reverse Current
Type UHP·400
"1" Output Reverse Current
Type UHP·400·1
"1" Output Reverse Current
Type UHp·500
"0" Output Voltage
loff
MIN
2.0V
2.0V
lOV
50
v.A
loff
Von
!cCllI
ICCIO)
2.0V
0.8V
0.8V
5.0V
OV
2.0V
Vee
Vee
5.0V
OV
lOOV
150mA
250mA
"1" Level Supply Current
"0" Level Supply Current
MIN
MIN
MIN
MAX
MAX
50
0.5
0.7
6
24.5
/loA
V
V
rnA
rnA
NOM
NOM
4
17.5
Notes
12
1,2
OUT-
INPUT 2.4V VCC=5V
PUT
Vs
INPUT
RL
I
I
10%
,;yo:.:10",%~_ _ _ Vin(O)
I
I
I
I
I
I
I
iI
I
lSpF
N• te3J
: ... LOAD
I\. ______
CIRCUIT .J
01«1. 110.
'-L
I
-r--------i
t pel I
I
I
tpdO
jl"50%----50'l<-o....
I
OUTPUT
--Vout(1)
_ _ _ _............J.
Vovt(O)
()WG. 110. A-.7628C
A~7876D
Type UHP..402, UHP..402..1, and UHP..S02 Quad 2..lnput OR Power Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
Temp.
Test Conditions
Driven
Input
VCC
Limits
Other
Input
Output
Min.
Typ.
Max.
Units
"1" Output Reverse Current
Type UHP·402
"1" Output Reverse Current
Type UHP·402·1
"1" Output Reverse Current
Type UHp·502
"0" Output Voltage
loff
MIN
2.0V
OV
40V
50
p.A
loff
MIN
2.0V
OV
lOV
50
/loA
loff
Von
!cCll)
ICCIO)
2.0V
0.8V
0.8V
5.0V
OV
OV
0.8V
0.8V
5.0V
OV
lOOV
150mA
250mA
"1" Level Supply Current
"0" Level Supply Current
MIN
MIN
MIN
MAX
MAX
50
0.5
0.7
6.3
25
/loA
V
V
rnA
rnA
NOM
NOM
4.1
18
OUT-
INPUT
VCc=5V
PUT
Vs
INPUT
10%
~'O'l<::,,;o:"""_ _ _ _ Vin(Ol
I
I
1i 15pF
I
~
tpd I
-r--------i
I
Note 3)
LOAD
OUTPUT
L:~~~.J
wa.
'1
'pdQ
I J -_ _ _"-"\'
lO%
50%
L:::::~:
OWG. 110. A.7628C
110. 1-78778
NOTES:
1. Typical values are at VCC ~ 5.0Y, TA ~ 25°C.
2. Each gate.
.
3. Capacitance values specified include probe and test fixture capacitance.
2-4
Notes
1,2
1,2
SERIES UHP-400, UHP-400-1, & UHP-SOO (Cont'd)
Type UHP-403, UHP-403-1, and UHP-S03 Quad OR Relay Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Test Conditions
Vee
loft
MIN
2.0V
OV
loff
MIN
2.0V
OV
loft
MIN
MIN
MIN
NOM
NOM
MAX
MAX
2.0V
0.8V
0.8V
OV
Vee
5.0V
OV
OV
0.8V
0.8V
OV
Vee
5.0V
OV
100V
150mA
250mA
OPEN
Symbol
Characteristic
Temp.
"I" Output Reverse Current
Type UHP·403
"I" Output Reverse Current
Type UHP·403·1
"I" Output Reverse Current
Type UHP·503
"0" Output Voltage
Von
Diode Leakage Current
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
ILK
Vo
leellL
leelO)
INPUT
VCC - 5V
OPEN
Limits
Driven
Input
NOM
NOM
NOM
NOM
OUTPUT
Other
Input
Output
Min.
Typ.
Max.
Units
40V
100
I'A
70V
100
I'A
100
0.5
0.7
200
"A
V
V
I'A
V
mA
mA
1.5
4.1
18
1.75
6.3
25
Notes
3
4
1,2
1,2
Vs
II
,------.
RL
I
tpdl~
OUTe,,,
)\\". riO.
A_~
'
,
I
r------------;-
tpdQ
s"'c:::::::
/50"
InA
Type UHP-406, UHP-406-1, and UHP-S06 Quad AND Relay Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Test Conditions
Driven
Input
Output
Characteristic
Symbol
"I" Output Reverse Current
Type UHP·406
"I" Output Reverse Current
Type UHP-406·1
"I" Output Reverse Current
Type UHp·506
"0" Output Voltage
loff
MIN
2.0V
2.0V
loti
MIN
2.0V
2.0V
loff
Von
ILK
Vo
icCII)
leClo)
2.0V
0.8V
0.8V
OV
Vee
5.0V
OV
2.0V
Vee
Diode Leakage Cu rrent
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
MIN
MIN
MIN
NOM
NOM
MAX
MAX
Temp.
NOM
NOM
NOM
NOM
Vee
Y.=
OV
Vee
5.0V
OV
CUTUT-
I
I
I
iI
I
: -=
15pF
N o,e51
LOAD
I
CIRCUIT
L ____ _
tpdl~
/~.
OUTPUT
----'
NOTES:
1. Typical values are at Vce ~ 5.0V. T. ~ 25°C.
2. Each gate.
3. Diode leakage current measured at V. ~ Vofflmin).
4. Diode forward voltage drop measured at If ~ 200mA.
5. Capacitance values specified include probe and test fixture capacitance.
2-5
Limits
Other
Input
Min.
Typ.
Max.
Units
40V
100
I'A
70V
100
I'A
100V
150mA
250mA
OPEN
100
0.5
0.7
200
1.75
6
24.5
I'A
V
V
I'A
V
mA
mA
1.5
4
17.5
Notes
3
4
1,2
1,2
SERIES UHP-400, UHP-400-1, & UHP-500 (<;ont'd)
Type UHP-407, UHP-407-1, and UHP-S07 Quad NAND Relay Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
Temp.
"I" Output Reverse Current
Type UHP.-407
"I" Output Reverse Current;
TVDe UHP,401-1
"I" Output Reverse Current
Type UHP-507
"a" Output Voltage
INPUT
Other
Input
Output
Min.
Typ.
Max.
Units
loff
MIN
0.8V
Vcc
50V
100
p.A
I fi
MIN
0.8V
Vcc
70V
100
p.A
loft
MIN
MIN
MIN
NOM
NOM
MAX
MAX
0.8V
2.0V
2.0V
Vee
OV
OV
5V
Vec
2.0V
2.0V
Vee
OV
OV
5V
100V
150mA
250mA
OPEN
lOa
0.5
0.7
200
1.75
7.5
26.5
p.A
V
V
p.A
V
mA
mA
Von
Diode Leakage Current
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
Limits
Test Conditions
Driven
Input
Ve(
ILK
VD
leell)
leelo)
NOM
NOM
NOM
NOM
1.5
6
20
Notes
4
5
1,2
I.2
2.4V
INPUT
_ _tpdO _ _
~
II
I
;5pF
!
lINO" 3)
VlnlO)
~
"J;J.IIO~%,--_ _ _ _
OUTPUT
: -=
LOAD
CIRCUIT
I
L _____
I
J
Type UHP-408, UHP..408-1, and UHP-S08 Quad 2-lnput NAND Power Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
Temp.
Test Conditions
Driven
Input
Vee
Other
Input
Limits
Output
MIN
Vee
40V
50
p.A
Min.
Typ.
Max.
"I" Output Reverse Current
Type UHP-408
"I" Output Reverse Current
Type UHP-408-1
"I" Output Reverse Current
IYI!!l UHP-508
"0" Output Voltage
loff
"I" Level Supply Current
"a"
loff .
MIN
0.8V
Vee
70V
50
p.A
loff
Von
MIN
MIN
MIN
MAX
MAX
0.8V
2.0V
2.0V
OV
5.0V
Vee
2.0V
2.0V
OV
5.0V
100V
150mA
250mA
50
0.5
0.7
7.5
26.5
p.A
V
V
mA
mA
leClI)
leClo)
Level Supply Current
0.8V
NOM
NOM
6
20
OUT-
PuT
Vs
INPUT
I
"I:.ll<::iO..._ _ _ _ VlnlO)
1
I
I
I
I
I
I ~
JSpF
:lrNote3
I
I _
tpdQ
r---
I
I
l l
I
-
Vou t(1)
OUTPUT
I
I
I ______
CIRCUIT ..J1
'I
Units
--- - -- -
LOAD
NOTES:
1. Typical values are at Vee ~ 5.0V, TA ~ 25°C.
2. Each gate.
3. Capacitance values specified include probe and test fixture capacitance.
4. Diode leakage current measured at V. ~ Volll m;,).
5. Diode forward voltage drop measured at If ~ 200mA.
Vout(O)
OWG. NO. '-1900A
2-6
Notes
1,2
I.2
SERIES UHP·400, UHP·400·1, & UHP·SOO (Cont'd)
Type UHP-432, UHP-432-1, and UHP-S32 Quad 2-lnput NOR Power Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Test Conditions
Driven
Input
Vee
Other
Input
Output
loff
MIN
0.8V
0.8V
40V
loff
MIN
0.8V
0.8V
0.8V
2.UV
2.0V
5.0V
OV
0.8V
OV
OV
5.0V
OV
Temp.
Symbol
"I" Output Reverse Current
Type UHP-432
"I" Output Reverse Current
Type UHP-432-1
"I" Output Reverse Current
Type UHP-532
"0" Output Voltage
loff
Von
"0" Level S~pp[y Current
"I" Level Supply Current
leelQL
leell)
MIN
rvilN
MIN
MAX
MAX
NOM
NOM
Limits
Min.
Typ.
Max.
Units
50
/LA
70V
50
/LA
100V
150mA
250m A
50
0.5
0.7
25
7.5
/LA
V
V
mA
mA
20
6
Notes
I 2
1,2
OUTINPUT
Vcc-5V
PUT
Vs
lNPlJf
IJ
~"'------ \('nIO)
!pdQ
1
I
:
. ! 'ipF
: INotoS)
I
CIRCUIT
L ____
DlI!G.
OUTPUT
--- - -- -
I.GAD I
I ':"
,~o.
J
i
Yout(O)
PWG. 10. A-1900A
A-7<)02 A
Type UHP-433,UHP-433-1, and UHP-S33 Quad NOR Relay Drivers
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Test Conditions
Vcc
Other
Input
Output
loll
MIN
0.8V
0.8V
40V
100
/LA
Symbol
Characteristic
Limits
Driven
Input
Temp.
Min.
Typ.
Max.
Units
"I" Output Reverse Current
Type UHP-433
"1" Output Reverse Current
Type UHP-433-1
"I" Output Reverse Current
Type UHP-533
"0" Output Voltage
loll
MIN
0.8V
0.8V
70V
100
• /LA
loff
Von
Diode Leakage Cu rrent
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
ILK
Vo
le((11
leCio)
MIN
MIN
MIN
NOM
NOM
MAX
MAX
0.8V
2.0V
2.0V
Vee
OV
OV
5V
0.8V
OV
OV
Vee
OV
OV
5V
lOOV
150mA
250m A
OPEN
100
0.5
0.7
200
1.75
7.5
25
/LA
V
V
/LA
V
mA
mA
INPUT
V CC""5V
OPEN
NOM
NOM
NOM
NOM
l.5
6
20
OUTPUT
, - - - - - - -I
'L
1
INPUT
="'------
V'oIO)
OUTPUT
' - - - . . 1 - - - - - - - vout(O)
[}WG. HO . .1.-1900.1.
NOTES:
l. Typical values are at Vee ~ 5.0, TA ~ 25°C.
2. Each gate.
3. Diode leakage current measured at V. ~ Vofflminl.
4. Diode forward voltage drop measured at If ~ 200mA.
5. Capacitance values specified include probe and test fixture capacitance.
2-7
Notes
3
4
I, 2
I, 2
SERIES UHC· and UHD·400, 400· 1 & 500
SERIES UHC- and UHD-400, 400-1, & 500
POWER and RELAY DRIVERS
HERMETICALLY-SEALED
FEATURES
•
•
•
•
•
•
SOOmA Output Sink Current Capability
DTL/TTL Compatible Inputs
Transient Protected Outputs on Relay Drivers
High Voltage Output - 100V Series SOD, 70V Series 400·1, and 40V Series 400
Hermetically·Sealed Packages to MIL·M·38SlO
High·Reliability Screening to MIL·STD·883, Class B
UHC·400/4oo.\/Soo
UHD.4oo/4oo:1/Soo·
UHC·402/402·1 1502'
UHD·402/402·1/S02
UHC·403/403·1/S03
UHD.403/403·1/S03
UHC·406/406-1/506
UHD·406/406·1/506
·UHC·407/407.1/S07
UHD·407 I 407·1/507
UHC·408/408·lIS08';
UHD-408/408·1 1508
UHC·432/432·1/532
UHD·432/432·1/532
UHC·433/433·1/533
UHD·433/433·1/533
Description
These Series 400, 400·1, and 500 hermetically· sealed power and relay drivers
are bi·polar monolithic circuits incorporating both logic gates and high·
current switching transistors on the same chip. Each device contains four
drivers. capable of sinking 500mA in the ON state. In the OFF state, Series
400 devices will sustain 40V, Series 400-1 devices will sustain 70V, and Series
500 devices will sustain 100V.
All devices are available in either a 14-pin hermetic flat-pack package (Types
UHC-) or a 14-pin hermetic dual in-line package (Types UHD-). These
packages conform to the dimensional requirements of Military Specification
MIL-M-38510 and meet all of the processing and environmental requirements
of Military Standard MIL-STD-883, Method 5004 and 5005. These devices
are also furnished in a plastic 14-pin dual in-line package (Types UHP-) for
operation over a limited temperature range.
Applications
The UHC- and UHD- Series 400, 400-1, and 500 power and relay drivers are
ideally suited for driving incandescent lamps, relays, solenoids, and other
interface devices with up to IA output current per package. Hermetic sealing and an operating temperature range of -55°C to +125°C recommend
them for military and aerospace applications as well as commercial and industrial control applications where severe environments may be encountered.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee ..
I nput Voltage, V;n: .
Output Off ·state Voltage, Voff :
Series UHC·400 and UHD·400.
Series UHC·400·I and UHD·400·I
Series UHC·SOO and UHD·500.
Output On·State Sink Current, Ion ..
Suppression Diode Off· State Voltage, Vof!.
Series UHC·400 and UHD·400.
Series UHC·400·! and UHD·400·!
Series UHC·SOO and UHD·SOO
Suppression Diode On·State Current, Ion-.
Operating Free·Air Temperature Range, TA
Storage Temperature Range, Ts
.N
. .S.SV
'" .40V
.70V
. .. lOOV
.. SOOmA
..40V
. ..... 70V
.. lOOV
. .... SOOmA
. -SsoC to +I2SoC
. -6SoC to + ISO°C
2-8
SERIES UHC- and UHD-400, 400-1 & 500 (Cont' d)
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (V cc):
,OQerating Tem~erature Range
Current into any output (ON state)
Min.
Nom.
4.5
-55
5.0
+25
Units
Max.
V
5.5
+125
250
~C
mA
STATIC ELECTRICAL CHARACTERISTICS: (over operating temperature range unless
otherwise noted)
Characteristic
"I" Input Voltage
"0" Input Voltage
"0" Input Current at all Inputs
except Strobe
"0" Input Current at Strobe
"I" Input Current at all Inputs
except Strobe
"I" Input Current at Strobe
Symbol
Temp.
Test Conditions
Driven
Other
Input
Input
Vcc
V',ll)
V",O)
MIN
MIN
ir"ol
1',101
ir,(1)
MAX
MAX
MAX
MAX
MAX
MAX
1,,(11
Limits
Output
Min.
Typ.
Max.
2.0
0.8
O.4V
0.4V
2.4V
5.5V
2.4V
5.5V
4.5V
4.5V
OV
OV
OV
OV
-0.55
-1.1
-0.8
-1.6
40
I
100
I
Units
Notes
V
V
rnA
rnA
itA
rnA
itA
rnA
1,2
2
itA
itA
I'A
V
V
V
V
itA
V
rnA
rnA
6
6
I
I
"I" Output Reverse Current
Series 400
Se ries 400-1
Series 500
"0" Output Voltage
Diode Leakage Current
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
'off
Vo ,
ILK
Vo
ICc(1I
leC(o)
NOM
NOM
MAX
MAX
NOM
NOM
NOM
NOM
40V
70V
100V
l50mA
250m A
150mA
250mA
OPEN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
NOM
NOM
MAX
MAX
1.5
100
100
100
0.5
0.7
0.6
0.8
20Q
1.75
7.5
26.5
NOTES:
1. Each input.
2. Typical values are at Vce ~ 5.0V, TA ~ 25°C.
3. Measured at V. ~ Vofflm"J'
4. Measured at If ~ 200mA.
5. Each gate.
6. Input test conditions are listed in Table IV.
2-9
6
6
6
6
6
3
2,4
5,6
5,6
II
SERIESUHC~ and UHD·400, 400·1 & 500 (Cont' d)
Table IV
INPUT CONDITIONS FOR OUTPUT CHARACTERISTIC MEASUREMENTS
"
"I "Output Reverse
Current (Ioff)
,Driven
Other
Input
Input
Type UHC- or UHD400, 400-1, 500
402,402-1,502
403,403-1, 503
406, 406-1, 506
407,407-1,507
40B, 40B-I, 50B
432, 432-1, 532
433,433-1,533
2.0V
2.0V
2.0V
2.0V
O.BV
0.8V
O.BV
O.BV
"0:' Output Voltage
(V...)
Driven
Other
Input
Input
2.0V
2.0V
OV
2.0V
Vee
Vee
0.8V
0.8V
0.8V
0.8V·
0.8V
O.BV
2.0V
2.0V
2.0V
2.0V
"1" Level Supply
Current (leel1 )
Driven
Other
Input
Input
5.0V
5.0V
5.0V
5.0V
OV
OV
OV
OV
Vee
0.8V
O.BV
Vee
2.0V
2.0V
OV
OV
II:,'
"0" Level Supply
Current~'.i
Driven
Input
Other
Input
5.0V
5.0V
5.0V
5.0V
OV
OV
OV
OV
OV
OV
OV
OV
5.0V
5.0V
5.0V
5.0V
OV
OV
OV
OV
5.0V
5.0V
5.0V
5.0V
Limils
Max.
Units
SWITCHING CHARACTERISTICS: Vee = 5.0V, TA = 25°C
Cha raclerislic
Symbol
Turn-on Delay Time
Series 400
Series 400-1
Series 500
IpdO
Turn-off Delay Time
Series 400
Series 400-1
Series 500
Ipd1
Tesl Conditions
Min.
Typ.
Vs = 40V, RL = 265 u (6 Walts)
Vs = lOY, RL = 465 fl (10 Watts)
Vs = lOOV, RL = 670u (15 Watts)
200
500
ns
Vs = 40V, RL = 265 u (6 Watts)
Vs = 70V, RL "'" 46511 (10 Watts) ,
Vs = 100V, RL = 6700 (15 Watts)
300
750
ns
Noles
Typical Switching Test Circuit
INPUT
2.4V
vee
5V C Ef'..
0t;: "
Vs
r.Y---- 1
:
~l
,
INPUT
"
'pdQ
I
I
1l
:
I
5P
OUTPUT
'
-: LOAD
CIRCUIT
,
'- _____ J
DWG.1I0', A-79OO'"
INPUT PULSE CHARACTERISTICS
V;.,(O)
OV
Vln I ~ 3.SV
If
7.n.
Ip
It
= 1" nl
PII
THERMAL DATA
Thermal Resistance, Junction to Case,
aie
TtJermal Resistance, Junction to Free Air,
aia
2-10
I,..
= 500kHz
UHC-
UHD-
Units
BO
65
·C/Watt
140
90
·C/WaU
SERIES UHC· and UHD.400, 400·1 & 500 (Cont'd)
Device Pinning
UHC-400
UHC-400-1
UHC-SOO
UHC-402
UHC-402-1
UHC-502
UHC-403
UHC-403-1
UHC-503
UHC-406
UHC-406-1
UHC-506
D
UHC-407
UHC-407-1
UHC-507
UHC-408
UHC-408-1
UHC-508
UHC-432
UHC-432-1
UHC-532
UHC-433
UHC-433-1
UHC-533
UHO-400
UHO-400-1
UHO-SOO .
UHO-402
UHO-402-1
UHO-502
UHO-403
UHO-403-1
UHO-503 '
UHO-406
UHO-406-1
UHO-506
UHO-407
UHO-407-1
UHO-507
UHO-408
UHO-408-1
UHO-508
UHO-433
UHD-433-1
UHO-533
UHO-432
UHO-432-1
UHO-532
2-11
,i.,
, "~,, l±. tW,
.,.
t.... ,
« ,;.;
SERIES UNC· and UND.400, 400·1, & 500 (Cont'd)
POWER DRIVERS WITH MIL-STD-883
HIGH-RELIABILITY SCREENING
Power drivers with high-reliability screening can be ordered by adding the suffix "MIL" to the part number, for
example, UHD-400MIL. If marking with the customers part number is necessary in place of the Sprague Electric part number, this must be stated on the purchase order with the marking desired.
Table I - 100% Production Screen Tests (All Hermetic Parts)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.1 thru 3.1.6
MIL-STD-883
Test Method
Screen
Internal Visual
Stabilization Bake
Thermal Shock
Constant Acceleration
Fine Seal
Gross Seal
Electrical
Marking
Conditions
2010, Condo B
1008,Cond. C
lOll, Condo A
2001, Condo E
1014, Condo A
1014, Condo C
1SO·C, 24 Hours
oto 100·C, 15 Cycles
30,000 G's, VI Plane
5 x 10- 7 Maximum
Per Eng. Bull. 29300.1
Sprague or customer part number, date code, lot identification, index point
Table II - 100% High-Reliability Screening ("MIL" Suffix Parts Only)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.9 thru 3.1.15 and 3.1.18
MIL-STD-883
Test Method
Screen
Interim Electrical
Burn·ln
Static Electrical
Dynamic & Functional Electrical
Fine Seal
Gross Seal
External Visual
Table III -
Conditions
5005, Gp A, Subgp 1
1015, Condo A
5005, Gp A, Subgpl
5005, Gp A, Subgp 2 & 3
5005, Gp A, Subgp4, 7 &9
1014, Condo A
1014, Cond_ C
2009
25°C per Eng. Bull. 29300.1
125°C, 160 Hours
25°C per Eng. Bull. 29300.1
-55· & +125°C per Eng. Bull. 29300.1
25"C per Eng. ~ull. 2930(U
5 x 10- 7 Maximum
High-Reliability Qualification and Quality Conformance Inspection
MIL-STD-883, Method 5004, Class B, Paragraph 3.1.17
Test
MIL-STD-883
Test Method
Description
Group A Subgp. 1-4, 7 &9
Group B
Group C
Group D
5005, Table I
5005, Table II
5005, Table III
5005, Table IV
Each production lot
Each production lot
End points,Gp. A, Subgp. I, every 90 days
End points, Gp. A, Subgp. I, every6 months
2-12
UDN·254GB QUAD NAND POWER DRIVER
UDN.2540B QUAD NAND POWER DRIVER
SPECIFICALLY DESIGNED for use in extremely
harsh electrical environments, the UDN-2540B
quad NAND driver interfaces between low-level
signal processing circuits and medium-power inductive loads. The inputs are compatible with most
TTL, DTL, LS TTL, 5 V to 15 V CMOS, and
PMOS. The outputs include integral transient suppression diodes for inductive loads such as relays,
solenoids, doc and stepping motors. These devices
can also be used to drive incandescent or heater
loads.
ABSOLUTE MAXIMUM RATINGS
D
at 25°C Free-Air Temperature
Output Voltage, VOUT ............... . ............. 60 V
Output Sustaining Voltage, VCE(SUS) ... . .............. ,35 V
Output Current, lOUT' .............................. 1.5 A
Logic Supply Voltage, Vee ............................ 18 V
Input Voltage, "IN ................................. 30 V
Power Dissipation, PD(each driver) .................... 2.5 W
(total package) ................. 2.77W*
Operating Temperature Range, TA .............. O°C to +70°C
Storage Temperature Range, Ts ............ -55°Cto +150 oC
RECOMMENDED OPERATING CONDITIONS
Supply Voltage Range, VCC, ............. +10.5 V to + 17 V
Collector Current, IC, .... , ..........•...... ,$ 500 mA
High-Level Input Voltage, VIN(I)................. ~ 2.0V
low·level Input Voltage, VIN(O)..... , ........ , ... $ 0.4 V
Output Diode Reverse Voltage, VS .. , . , , ...... ; .... $ 65 V
"Derate at the rate of 22.2 mW/oC above 25°C,
maRICAl CHARAaERISTICS Over Operating Temperature Range And Vee
(Unless Otherwise Specified)
= lG V to 15 V
Limits
Characteristic
"I" Output Reverse Current
Output Sustaining Voltage
'0" uutput VOltage
"1" Input Voltage
'0" Input Voltage
"1" Input Current
"0" Input Current
Input Clamp Voltage
"1" Level Supply Current
"0" Level Supply Current
Clamp Diode Forward Voltage
Clamp Diod.e Leakage Current
Symbol
IOFF
VCE(SUS)
VON
VIN(I)
VIN(O)
IIN(I)
IIN(O)
V1K
ICC(1)
IcC(O)
VF
IR
Test Conditions
VOUT = 50 V, VIN = 0.4 V, VENABLE =2.0 V
VOUT - 50 V, VIN - 2,0 V, VENABLE - 0.4 V
lOUT = 50 mA, VIN = VENABLE = 0,4 V
lOUT - :JUO mA, VIN - VENABLE - 2.0 V
lOUT = 750 mA, VIN = VENABLE = 2.0 V
lOUT = 1.0 A, VIN - VENABLE = 2.0 V
lOUT - 1.25 A, VIN - VENABLE = 2.0 V, VCC - 12 V
Min.
Max.
-
500
35
-
-
1.1
1.25
1.4
1.6
-
2.0
VIN - 15 V
VIN = 0.4 V
liN - -10 mA
lOUT - 500 mA,V IN - VENABLE - 2.0 V, Vcc - 15 V
VOUT - 50 V, VIN - VENABLE - 0.4 V, Vee - 15 V
IF - 1.0 A
IF - I.Z5 A
VR = 50 V, VIN - VENABLE = 2.0 V, DI +02 or 03 +0 4
2-13
500
-
u.5
20
-200
-1.5
33
7.0
-
2.1
2.5
-
1.0
-
Units'
,..A
,..A
V
V
V
V
V
V
V
,..A
,..A
V
mA
mA
V
V
mA
SERIES UDS·3600H
SERIES UDS·3600H DUAL 2·INPUT
PERIPHERAL and POWER DRIVERS
- Hermetically·Sealed
Type UDS·3611H
DualoAND Driver
• Four logic Types
e DTUTTUPMOS/CMOS Compatible Inputs
• Low Input Cu rrent
e Sustaining Voltage of 80 V
e Hermetically Sealed Package
• High-Reliability Screening to MIL-STD-883, Class B
Description
These "mini-DIP" dual 2-input peripheral and power drivers are
bi-polar monolithic integrated circuits incorporating AND, NAND, OR,
or NOR logic gates, and high-current switching transistors on the same
chip. The two output transistors are capable of simultaneously sinking
250 rnA continuously at an ambient temperature of +75°C. In the OFF
state, these drivers will sustain at least 80 V.
Type UDS·3612H
Dual NAND Driver
Applications
The Series UDS-3600H dual drivers are ideally suited for interface
between low-level or high-level logic and high-currentlhigh-voltage
loads. Typical applications include driving peripheral loads such as
incandescent lamps, light-emitting diodes, memories, and heaters.
With appropriate external diode transient suppression, the Series
UDS-3600H drivers can also be used with inductive loads such as relays,
solenoids, and stepping motors. Similar devices with integral transient
suppression are also available.
0
•
Type UDS·3613H
Dual ()R Driver
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee .........' ....
7.0 V
Input Voltage, Vin ........ " .............
30 V
Output Off-State Voltage, VoH . . . . . . . . . . . . . .
80 V
Output On-State Sink Current, I" ......... , ... ',' .
600 rnA
Suppression Diode Off-State Voltage, VoH •••••••••••••••••••••••••••••• 80 V
Suppression'Oiode On-State Current, Ion .................... : ....
600 rnA
Power DisSipation, Po .......•......................
1.0 W'
Package Power Dissipation, Po
See Graph
Ambient Temperature Range (operating), TA ............
-55°C to +1250C
Storage Temperature Range, Ts .......................... -65°C to +150°C
0
•••••••••••••
0
••
0
:
"
:
•••••••••••••••••
......
;
•••
0
;
•
"
..
,0
••••••••••••••
0
0
.,0
,
...
. . . . . . . . . . . . . . . . . . . . . .
•••••••
,.
•••
0
••••
•••••••••••••••••••••••••••••• "
0
••••
2·14
Type
UDS~36I~H
Dual 'NOR Driver
SERIES UDS-3600H (Cont'd)
TEMPERATURE IN
°c
vWG. 110. A-IO.!l7S
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (V ec)
Operating Temperature Range
Current into any output (ON state)
Mm.
Nom.
Max.
Units
4.5
-55
5.0
+25
5.5
+125
V
°C
300
rnA
ELECTRICAL CHARACTERISTICS (over operating temperature range unless otherwise noted)
Characteristic
Symbol Temp.
"1" Input Voltage
V;oll)
"U' Input Voltage
V;OIO)
"0" Input Current
"1" Input Current
1;010)
I;nll)
Input Clamp Voltage
VI
Vcc
MIN
MIN
MAX
MAX
MIN
Test Conditions
Driven Other
Input
Input
limits
Output
Typ.
Min.
Units
Max.
2.0
0.4 V 30 V
30V
OV
-12 mA
0.7
100
10
-1.5
50
Notes
V
V
/LA
/LA
2
2
V
SWITCHING CHARACTERISTICS: Vec
limits
Characteristic
Turn-on Delay Ti me
Symbol
Turn-off Delay Time
T,dl
t,dO
Test Conditions
Vs = 70 V, Rl = 465
Cl = 15 pF
Vs - 70 V, R[ - 465
C[ = 15 pF
Min.
Typ.
Max.
-
200
500
Units
ns
Notes
n (10 Walts)
n (10 Walts)
--
300
750
ns
3
3
NOTES:
L
2.
3.
4.
Typical values are at Vcc = 5,OV, TA = 25"C.
Each input tested separately,
Voltage values shown in the test circuit waveforms are with respect to network ground terminal. V;nlOl
Capacitance values specified include probe and test fixture capacitance.
V;nll)
INPUT PULSE CHARACTERISTICS
=
=
OV
3.5V
tf
t,
=
=
7ns
14ns
tn = IlLS
PRR = 500kHz
~-------------------------------~
2-15
SERIES UDS-3600H
(Cont~d)
Type UDS-3611 H Dual AND Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
"1" Output Reverse Current IOff
Temp.
"0" Output Voltage
Von
"1" level Supply Current
"0" level Supply Current
lecll)
ICeIO }
INPUT 2.4V
OUTPUT Vs
Vcc=SV
r
NOM
NOM
Vec
MIN
OPEN
MIN
MIN
MAX
MAX
Test Conditions
Driven Other
Input
Input
2.0V
2.0 V
2.0 V 2.0 V
0.8 V Vce
0.8 V Vee
5.0 V 5.0 V
OV
OV
limits
Output
Typ.
Min.
80 V
80 V
150 mA
300 mA
Max.
100
100
0.5
0.8
12
0.4
0.6
8.0
35
Units
Notes
/LA
/LA
V
V
mA
mA
1, 2
1, 2
49
----,
'l
,
INPUT
I
'0%
I
I
I
,
I
~'O'l::.;Yo:..-_ _ _ _ Vin(O)
I
I
15pF
'pd'
:
':'" ,LOAD
O_U_T_PU_T_ _ _
i INoloJ)
I
~
I
I"' ______
CIRCUIT J I
,
"'r---+l-'I-lpdO
'_..Jjr50%----50%-,C::::~:
0"'10. 110. A-78761J
DWG.IIO.A-8792
owe. Mo. A-1628C
Type UDS-3612H Dual NAND Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
"1" Output Reverse Current loff
"0" Output Voltage
Von
"1" level Supply Current
"0" level Supply Current
lecll)
leclo}
INPUT 2.4V
Temp.
NOM
NOM
Vee
MIN
OPEN
MIN
MIN
MAX
MAX
limits
Test Conditions
Drive
Other
Input
Input
0.8 V Vee
0.8 V Vee
2.0V
2.0 V
2.0 V 2.0 V
OV
OV
5.0 V
5.0 V
Output
80 V
80 V
150 mA
300 mA
Min.
Typ.
0.4
0.6
12
40
Max.
100
100
0.5
0.8
15
53
OUTPUT Vs
- - --I
,,,
'L
I
I
I
I
I
INPUT
I
ISpF
: IrNote31
,
I
1
I
I
I
I
, . . - - - Vout(1)
OUTPUT
'-----1.--- - -- -
Vout(O)
~
I ':'" LOAD
I
I ______
CIRCUIT .JI
O'~G.
No.
DWG. NO. A-1900A
A<163~
NOTES:
1. Typical values are at Vce = 5.0 V, TA = 25'C.
2. Per package.
3. Capacitance values specified include probe and test fixture capacitance.
2-16
Units
Notes
/LA
/LA
V
V
mA
mA
1, 2
1, 2
SERIES UDS-3600H (Cont'd)
Type UDS-3613H Dual OR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
"1" Output Reverse Current loff
"0" Output Voltage
Von
"1" Level Supply Current
"0" Level Supply Current
Icelll
leclOl
INPUT
VCC=5V
OUTPUT
Temp.
NOM
NOM
Test Conditions
Driven Other
Input
Input
2.0 V OV
2.0 V OV
O.S V O.S V
O.S V O.S V
5.0 V 5.0 V
OV
OV
Vee
MIN
OPEN
MIN
MIN
MAX
MAX
Limits
Output
SO V
SO V
150 mA
300 mA
Typ.
Min.
Max.
100
100
0.5
O.S
13
50
0.4
0.6
S.O
36
Units
Notes
/LA
/LA
V
V
rnA
mA
1, 2
1, 2
Vs
Rl
D
INPUT
:
r 'O;,;;%'--_ _ _ _ Vio(O)
10%
I
I
I
I
I
I
I
:
15pF
: INO"3
-=
I
CIRCUIT
-,,..----""'L•I
I
tpdQ
I
--Vo"!I)
:
OUTPUT
j
_ _ _ _ _- " ' .
L _____ ...J
D~'G.
I
-r------t
1 :
LOAD
I
t pd 1
I
50%
50"10
Vout(O)
DliG. No.
NO. A-7877B
C1tIG.MO ...... 979S
A-7628C
Type UDS-3614H Dual NOR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
"1" Output Reverse Current IOff
"0" Output Voltage
Von
"1" Level Supply Current
"0" Level Supply Current
ICCIlI
ICCIOI
INPUT
Vcc-5V
OUTPUT
Temp.
NOM
NOM
Vec
MIN
OPEN
MIN
MIN
MAX
MAX
Test Conditions
Driven Other
Input
Input
0.8 V
O.S V
2.0V
2.0 V
O.S V
O.S V
OV
OV
OV
5.0 V
OV
5.0 V
Limits
Output
SO V
SOV
150 mA
300 mA
Min.
Typ.
Units
0.4
0.6
Max.
100
100
0.5
O.S
12
4U
15
5U
mA
mA
Vs
INPUT
I
I
'pdO
:
,----Vout(l}
15pF
: I(Note3)
I _
I
OUTPUT
I.CAD
-CIRCUIT
L ____
'--_---1_ - - - - - -
I
...J
u~G
NOTES,
1. Typical values are at Vce = 5.0 V, TA = 25°C.
2. Per package.
3. Capacitance values specified include probe and test fixture capacitance.
2-17
NO
Vou/(O)
h-7900A
Notes
/LA
/LA
V
V
I, 2
1, 2
SERIES UDS-3600H (Cont'd)
POWER DRIVERS WITH MIL-STD-883
HIGH-RELIABILITY SCREENING
Power drivers with high-reliability screening can be ordered by adding the suffix 'MIL' to the part number, for
example, UDS··3611H-MIL. If marking with the customer's part number is necessary in place of the Sprague
Electric part number, this must be stated on the purchase order with the marking desired.
Table 1- 100% Production Screen Tests (All Hermetic Parts)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.1. thru 3.1.6
MIL-STD-883
Test Method
Screen
Internal Visual
Stabilization Bake
Therma I Shock
Constant Acceleration
Fine Seal
Gross Seal
Electrical
Marking
2010,
1008,
1011,
2001,
1014,
1014,
Condo
Condo
Condo
Condo
Condo
Condo
Conditions
B
C
A
E
A
C
150°C, 24 Hours
oto 100°C, 15 Cycles
30,000 G's, Yl Plane
5 x 10.7 Maximum
Per Specification
Sprague or customer part number, date code, lot identification, index point
Table II - 100% High-Reliability Screening ("MIL" Suffix Parts Only)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.9 thru 3.1.15 & 3.1.18
MIL-STD-883
Test Method
Screen
Interim Electrical
Burn-In
Static Electrical
Dynamic & Functional Electrical
Fine Seal
Gross Seal
External Visual
Table III -
Gp A,
Condo
Gp A,
Gp A,
Gp A,
Condo
Condo
Subgp
A
Subgp
Subgp
Subgp
A
C
1
25°C per Specification
125°C, 160 Hours
1
25°C per SpeCification
2 & 3 -SSOC & +125°C per Specification
4, 7 & 925°C per Specification
5 x 10-7 Maximum
High-Reliability Qualification and Quality Conformance Inspection
MIL-STD-883, Method 5004, Class B, Paragraph 3.1.17
Mll-STD-883
Test Method
Test
Group
Group
Group
Group
5005,
1015,
5005,
5005,
5005,
1014,
1014,
2009
Conditions
A Subgp. 1-4, 7 & 9
B
C
D
5005,
5005,
5005,
5005,
Table
Table
Table
Table
Description
I
II
III
IV
Each production lot
Each production lot
End points, Gp. A, Subgp. 1, every 90 days
End points, Gp. A, Subgp. 1, every 6 months
2·18
SERIES UDN·3600M
SERIES UDN-3600M DUAL 2-INPUT
PERIPHERAL and POWER DRIVERS
Type UDN-3611M
Dual AND Driver
FEATURES
•
•
•
•
•
•
•
Four Logic Types
DTL/TTL/PMOS/CMOS Compatible Inputs
Low Input Current
300 rnA Continuous Output Current
Sustaining Voltage of 80 V
Pin-far-Pin Replacement for Series LM3600N
Pin-far-Pin. Replacement for SN75451BP thru SN75454BP and
75461 thru 75464
.
IJ
Description
These "mini-DIP" dual 2-input peripheral and power drivers are bi-polar
monolithic integrated circuits incorporating AND, NAND, OR, or NOR
logic gates, and high-current switching transistors on the same chip_ The
two output transistors are capable of simultaneously sinking 300 rnA continuously at ambient temperatures of up to +70°C. In the OFF state, these
drivers will sustain at least 80 V.
Type UDN-3612M
Dual NAND Driver
Applications
The Series UDN-3600M dual drivers are ideally suited for interface between
low-level or high-level logic and high-current/high-voltage loads. Typical
applications include driving peripheral loads such as incandescent lamps,
light-emitting diodes,· memories, heaters, and other non-inductive loads of
up to 600 rnA (both drivers in parallel).
With appropriate external diode transient suppression, the Series UDN3600M drivers can also be used with inductive loads such as relays, solenoids,
and stepping motors. Similar devices with integral transient suppression are
the series UDN-S700M.
TypeUDN-3613M
Dual OR Driver
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee
10 V
I nput Voltage, Vin
30 V
80V
Output Off· State Voltage, Voll
600 rnA
Output On·State Sink Current, Ion
Suppression Diode Off· State Voltage, Voff
80V
Suppression Diode On·State Current, Ion
.. 600 rnA
Operating Free·Air Temperature Range, TA
O°C to +70°C
Storage Temperature Range, Ts .
. -55°C to + 150°C
Power Dissipation, PD......................... . ................. 1.5 W
Each Driver. ............................. . ................. O.S W
Derating Factor Above 25°C.................... . . ... 12.5 mW/oC or SO°C/W
2-19
Type UDN-361UA
Dual NOR Driver
SERIES UDN·3600M (Cont' d)
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (Ved:
Operating Temperature Range
Current Into any output CON state)
Min.
Nom.
Max.
4.75
0
5.0
5.25
+25
+70
300
Units
V
°C
rnA
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Test Conditions
Characteristic
"1" Input Voltage
Symbol
Temp.
Vee
Driven
Input
MIN
"0" Input Voltage
,Vin(1)
Vin{O)
"0" Input Current
);n{O)
MAX
0.4 V
I;n(1)
Input Clamp Voltage V,
MAX
30 V
MIN
12 rnA
Limits
Other
Input
Output
Min.
Typ.
Units
30 V
OV
SWITCHING CHARACTERISTICS:
50
VCC
Notes
V
MIN
"1" Input Current
Max.
2.0
0.8
V
100
10
p.A
p.A
1.5
V
2
2
5.0V, TA
Limits
Symbol
Test Conditions
Turn·on Delay Time
Turn·off Delay Time
Characteristic
Min.
Typ.
Max.
Units
Notes
tpdO
Vs - 70 V. RL - 465!1 (10 Watts)
CL ~ 15 pF
200
500
ns
3
tpdl
Vs ~ 70 V. RL
CL ~ IS pF
300
750
ns
3
~
465!1 (10 Watts)
NOTES:
1. Typical values are at Vee ~ 5.0V, TA ~ 25°C.
2. Each input tested separately.
.
. .
.
3. Voltage yalues shown In the test CIrcuit waveforms are with respect to network ground terminal.
4. Capacitance values specified Include probe and test fixture capacitance.
2-20
INPUT PULSE CHARACTERISTICS
Vin{O} ~ OV
tf
~
Vinl1! ~ 3.5V
t,
~
7ns
14ns
tp - I"s
PRR ~ 500kHz
SERIES UDN·3600M (Cont1d)
Type UDN-3611M Dual AND Driver
ELECTRICAL CHARACTERISTICS: (Qver operating temperature rang.e unless otherwise noted)
;
Characteristic
Symbol
.
"
"I" Output Reverse CUrrent ····.··.1..11
,
"0" Output Voltage
Von
"I" Level Supply Cu rrent
"0' Level Supply Current
leell)
)eClo)
Test Conditions
Qnven
Other
Input
Input
Vee
.. '
Temp.
MIN
OPEN
MIN
M.lN
MAX
MAX
.
NOM
NOM
2.0V
2.0V
0.8V
0.8V
5.0 V
2.0V
2.0V
Vee
Vee
5.0 V
UV
U
Output
limits
.
Max.
Min.
Typ.
80V .
80V
150mA
·3OOmA',
0.35
0.5
8.0
00
100
100
0.5
0.7
.
Units ,
Notes
p.A
p.A
12
V,
V
rnA
1,·2
~"
mR,
1, ,
IJ
OUTPUT Vs
INPUT 2.'V
- - --,
R,
I
I
I
J
I
I·
I
I
I
I
I
I
I1l. ____
ClkeUIl I
.~-.J
I)'·'G.MO. ,1,-78760
T,pe ,UDN.3612MDucd :;NANDDri,er',
ELECTRICAL CHARACTERISTICS:
(over operating temperature range unless otherwise noted)
,
;
,
~
' .
:Test Con~itions
urlven
ylne r
Input
Input
Vee
,
'.
-
'-:
CharacterIstic
"1" OU,tput Reverse Current
"O"Output Voltage
"1" Level Supply Current
"0" Level Supply Current
Symbol'
Temp.
MIN
'oll
6.8V;.
QPtN
U.sv
NOM
ryllN
MIN'
MAX
nUM
WIR"
2,OV
2.0 V
OV
O.U v
1"'1...
leellJ
lee(o)
,
.
Output
~e'
SOV
.. vee
2.0V
2.0V
OV
o.U v
SUV
:
,~
Limits
Min.
150 rnA
300mA
Typ.
Max.
Units
p.A
0.35
0.5
12
100
100
0.5
0.7
14
4U
.
INPUT
~",","---- Vio(O)
OUTPUT
~---I- - - - - - -
V""'(9).
O'IIG. KO, .1.·1900,1,
NOTES:
I. Typical values are at Vee = 5.0 V, TA = 25'C.
2. Pe r package.
3. Capacitance values specified include probe and test fixture capacitance.
2-21
o~
Notes
'p.A
V
V
rnA
mil,
1,2
I, l
SERIES UDN·3600M (Cont'd)
Type UDN·3613M Dual OR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
"1" Output Reverse Current
lolf
"0" Output Voltage
Von
"1" Level Supply Current
"0" Level Supply Current
ICClll
ICClol
Temp.
NOM
NOM
Test Conditions
Driven
Other
Input
Input
Vcc
MIN
OPEN
MIN
MIN
MAX
MAX
2.0 V
2.0 V
O.S V
O.S V
5.0V
OV
OV
OV
O.S V
0.8 V
5.0 V
OV
.Limits
Output
Min.
SOV
SO V
15ilmA
300 mA
Typ.
Max.
Units
Notes
0.35
0.5
S.O
36
100
100
0.5
0.7
13
50
po_A
poA
V
V
mA
mA
1,2
1,2
OUTINPUT
Ycc,,-5V
PUT
Vs
-- --,
INPUT
RL
~10::.:'Yo::.....
10%
,
'pd 1,...------1
,
OUTPUT
____ Yil'1(O)
I
r------t'I- 'pdO
',-----.,'
l~/o
50%
L::~::~:
DWG. MO. A-9795
OWG. No. 11-7628C
O-,lG. NO. A-78718
Type UDN·3614M Dual NOR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
"1" Output ReVerse Current
loff
"0" Output Voltage
Von
"1" Level Supply Current
"0" Level Supply Current
ICC(11
Icc(OI
Temp.
Vcc
NOM
NOM
MIN
OPEN
MIN
MIN
MAX
MAX
Test Conditions
Driven
Other
Input
Input
O.SV
O.S V
2.0 V
2.0 V
OV
5.0V
O.S V
0.8 V
OV
OV
OV
5;0 V
Limits
Output
Min.
SOV
SO V
150 mA
300 mA
Typ.
Max.
Units
u.A
0.35
0.5
12
40
100
100
0.5
0.7
15
50
OUT-
INPUT
Vcc5V
PUT
Vs
---
-,
INPUT
RL
~"'------
,
V:n(O)
I
:
lSpF
: I(Note
I _
-
, - - - - V out (1)
3)
tOAD I
I
I
I
CIRCUIT
L
_____
OUTPUT
J
u~G
NOTES:
1. TYPical values are at Vce ~ 5.0 V, TA ~ 25°C.
2. Per package.
1 Capacitance values specified include probe and test fixture capacitance.
2-22
_ NO,
A-1900~
"A
V
V
mA
mA
Notes
1,2
1,2
SERIES UDN-570J)A
SERIES UDN-5700A QUAD 2-INPUT
PERIPHERAL and POWER DRIVERS
-
TRANSIENT PROTECTED OUTPUTS
FEATURES:
•
•
•
•
•
Type UDN-5703A
Quad OR Driver
Four Logic Types
DTL/TTL/PMOS/CMOS Compatible Inputs
low Input Current
300 rnA Continuous Output Current
Sustaining Voltage of 80 V
D
Description
These l6-lead quad 2-input peripheral and power drivers are bi-polar monolithic integrated circuits incorporating AND, NAND, OR, and NOR logic
gates, high-current switching transistors, and transient suppression diodes on
the same chip. The four output transistors are capable of simultaneously
sinking 300 rnA continuously at ambient temperatures of up to +70°C. In
the OFF state, these drivers will sustain at least 80 V.
Type UDN-5706A
Quad AND Driver
Applications
The Series UDN-57ooA quad drivers are ideally suited for interface between
low-level or high-level logic and high-current/high-voltage loads. Typical
applications include driving peripheral loads such as incandescent lamps,
light-emitting diodes, memories, and heaters.
The integral transient suppression diodes allow their use with inductive
loads such as relays, solenoids, or stepping motors without the need for discrete diodes. For non-inductive loads, the diode common buss can be used
as a convenient lamp test.
Type UDN-5707A
Quad NAND Driver
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee.
... 7.0 V
Input Voltage, V;" .
. ..... 30 V
Output Off -State Voltage, Voll
.. 80 V
Output On-State Sink Current, 10" .
.600 rnA
Suppression Diode Off-State Voltage, Voll .
. .80 V
Suppression Diode On-State Current, 10" . . .
. ... 600 rnA
Operating Free-Air Temperature Range, TA
...... DoC to +70°C
Storage Temperature Range, Ts
.... -55°C to +150°C
Power Dissipation, PD ............................................ 2.0 W
Each Driver. ................................................ 0.8 W
Derating Factor Above 25°C .......................... IS.S7 mW/oC or SO°C/W
2-23
Type UDN-5733A
Quad NOR Driver
SERIES UDN·5700A (Cont'd)
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (Ved:
Operating Temperature Range
Current into any output (ON state)
Min.
Nom.
Max.
4.75
5.0
+25
5.25
+70
300
o
Units
V
°C
rnA
ELECTRICAL CHARACTERISTICS (over operating temperature range unless otherwise noted)
Test Conditions
Characteristic
Symbol
Temp.
Vee
"1" Input Voltage
Vin(11
MIN
"0" Input Voltage
"0" Input Current
Vin(OI
I;n(OI
MIN
MAX
lin(l I
Input Clamp Voltage V,
MAX
"1" Input Current
MIN
Driven
Input
Limits
Other
Input
Output
Min.
Typ.
Max.
2.0
0.4 V
30 V
30 V
-12 rnA
OV
Notes
V
50
SWITCHING CHARACTERISTICS: Vcc
Units
0.8
100
"A
V
2
10
-1.5
"A
V
2
5.0V, TA
Limits
Test Conditions
Symbol
Min.
Max.
Units
Notes
Turn-on Delay Time
i pdO
~
Cl'~
70 V, Rl
15 pF
~
46511 (10 Watts)
200
500
ns
3
Turn-off Delay Time
tpd1
Vs ~ 70 V, Rl
Cl ~ 15 pF
~
46511 (10 Watts)
300
750
ns
3
Characteristic
Vs
Typ.
NOTES:
INPUT PULSE CHARACTERISTICS
1. Typical values are at Vee ~ S.OV, TA ~ 25'C.
2. Each Input tested separately.
Vin(O, ~ OV
tf ~ 7ns
tp ~ II'S
3. Voltage values shown in the test ci.rcuit waveforms are with respect to network ground terminal.
PRR ~ 500kHz
4. Capacitance values specified include probe and test fixture capacitance.
L.V.;;.in.;;.I1;...!~_3._5V_ _ _.;;.t,_~_1_4_ns_ _ _ _ _ _- - I
2-24
SERIES UDN·5100A (Cont'd)
T,pe UDN-S103A Quad OR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
Test Conditions
Driven
Other
Input
Input
Vce
Temp.
"1" Output Reverse Current
loll
MIN
"0" Output Voltage
Von
Diode leakage Current
Diode Forward Voltage Drop
"1" level Supply Current
"0" level Supply Current
ILK
Vo
MIN
MIN
NOM
NOM
OP~N
INPUT
v CC- 5V
NOM
NOM
NOM
NOM
ICCll)
leClo)
OPEN
MAX
MAX
OV
2.0V
2.0 V
0.8'1
0.8 V
OV
OV
0.8 V
0.8 V
OV
Vee
5.0 V
OV
Vee
5.0V
OV
Limits
Output
Min.
80 V
80V
150 mA
300 mA
Typ.
0.35
0.5
OPEN
1.5
16
72
Max.
Units
100
100
0.5
0.7
200
j.. NO. J>..IO.196A
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (Vee)
Operating Temperature Range
Current into any output (ON state)
Min.
Nom.
Max.
4.5
-55
5.0
+25
5.5
+125
300
Units
V
°C
mA
ELECTRICAL CHARACTERISTICS (over operating temperature range unless otherwise noted)
Test Conditions
Characteristic
Symbol
Temp.
Driven
Input
Vee
Limits
Other
Input
"1" Input Voltage
Vlnll}
"0" Input Voltage
VlnlO}
MIN
"0" Input Current
"nIO}
MAX
0;4 V
30 V
"nil}
I nput Clamp Voltage VI
MAX
30 V
OV
MIN
-12 rnA
Output
MIN
"I" Input Current
Min.
Typ.
Max.
Units
2.0
SWITCHING CHARACTERISTICS: Vcc
Notes
V
50
0.7
V
100
"A
10
"A
V
-1.5
2
2
5.0V, TA
Limits
Characteristic
Test Conditions
Symbol
Turn-on Delay Time
tpdO
Turn·off Delay Time
tpdT
Vs =
Cl =
Vs =
Cl =
Min.
70 V, Rl = 465 II (10 Watts)
15 pF
70 V, Rl = 465 II (10 Watts)
15 pF
NOTES:
1. Typical values are at Vee = 5.0V, TA = 25°C.
2. Each input tesled separately.
3. Voltage values shown In the test circuit waveforms are with. respect to network ground terminal.
4. Capacitance values specified include probe and test fixture capacitance.
Typ.
Max.
Units
Notes
200
500
ns
3
300
750
ns
•...
3
INPUT PULSE CHARACTERISTICS
VlnlOI
=
OV
Vlnl1!
=
3.5V
If
t,
=
=
7ns
14ns
tp = l"s
PRR = 500kHz
SERIES UDS·5700H (Cont'd)
Type UDS·5703H Quad OR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
"1" Output Reverse Current
loll
"0" Output Voltage
Von
Diode Leakage Current
Diode Forward Voltage Drop
"1" Level Supply Current
ILK
Vo
"a" Level Supply Current
INPUT
Test Conditions
Driven
Other
Input
Input
Vee
Temp.
MIN
OPEN
MIN
MIN
NOM
NOM
NOM
NOM
!cell)
)eC(o)
NOM
NOM
MAX
MAX
OPEN OUTPUT
2.0 V
2.0 V
0.8 V
0.8 V
OV
OV
OV
0.8 V
0.8 V
OV
Vee
5.0 V
OV
Vee
5.0 V
OV
Limits
Output
Min.
80 V
80 V
150mA
300 mA
OPEN
Typ.
Max.
Units
I'A
0.4
0.6
100
100
0.5
0.8
200
1.5
16
72
1.75
25
100
Notes
I'A
V
V
I'A
V
mA
mA
3
4
1,2
1,2
D
Vs
I
I
15pF
]Note 5)1
':' LOAD I
IL. _____
CIRCUIT
I
D~.
NO, A-9InA
Type UDS·5706H Quad AND Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
"I" Output Reverse Current
loll
"0" Output Voltage
Von
Diode Leakage Current
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
ILK
Vo
Test Conditions
Driven
Other
Input
Input
Vee
Temp.
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
MAX
NOM
NOM
NOM
NOM
!cell)
leC(o)
Limits
Output
2.0 V
2.0 V
2.0V
2.0V
80 V
80 V
0.8 V
0.8 V
OV
Vee
Vee
OV
150 mA
300 mA
OPEN
Vee
5.0 V
OV
Vee
5.0 V
OV
Min.
r ----,
'L
.
I
tpdl~
. ISpF
INo.
1
51
_OU_TPU_T_ _ _
: ~ LOAD
IL ____
CIRCUIT
_
DliG.
i~O.
...I/~
A-7878A
NOTES:
I. Typica) values are at Vee - 5.0 V, TA - 25°C.
2. Per package.
3. Diode leakage current measured at V, - VolI(m;nl.
4. Diode forward voltage drop measured at If - 300 mAo
5. Capacitance values specified include probe and test fixture capacitance.
2-29
........ ". hit,
;
Typ.
Max.
Units
100
100
I'A
I'A
V
V
0.4
0.6
0.5
0.8
200
1.5
16
70
1.75
24
98
I'A
V
mA
mA
Notes
3
4
1,2
1,2
SERIES UDS·5700H (Cont'd)
Type UDS·5707H Quad NAND Driver
ELECTRICAL CI:IARACTERISTlCS: (over operating temperature range unl!!ss otherwise noted)
Symbol
Characteristic
"1" Output Reverse Current
loll
"0" Output Voltage
Von
Diode Leakage Current
Diode Forward Voltage Drop
"1" Level Supply Current
"0" Level Supply Current
ILK
Vo
lee(11
lee(OI
Temp.
Test Conditions
Driven
Other
Input
Input
Vee
NOM
NOM
NOM
NOM
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
MAX
O.S V
O.SV
2.0 V
2.0V
Vee
Vee
2.0 V
2.0V
Vee
OV
OV
5.0 V
Vee
OV
OV
5.0 V
Limits
Output
Min.
Typ.
SOV
SOV
150 rnA
300 rnA
OPEN
Max.
100
100
0.4
0.6
1.5
24
SO
0.5
O.S
200
1.75
30
106
Units
Notes
uA
/lA
V
V
/lA
V
rnA
rnA
3
4
1,2
1,2
~~---- VI,,(O)
lSpF
I(NONS)
OUTPUT
':'
LOAD
CIRCUIT
L. _____
.JI
- - - - _.- -
Vout(O)
DWG.1I0. '-1!M1GA
OWl>. NO. A-78!lllA
Type UDS·5733H Quad NOR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Symbol
Characteristic
"1" Output Reverse Current
loll
"0" Output Voltage
Von
Diode Leakage Cu·rrent
Diode Forward Voltage Drop
"1" Level Supply Current
"0" Level Supply Current
ILK
Vo
lee(11
INPUT
Vcc=sv
OPEN
lee(ol
QUTNT
Temp.
Test Conditions
Driven
Other
Input
Input
Vee
NOM
NOM
NOM
NOM
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
MAX
O.S V
O.SV
2.0V
2.0V
O.S V
O.SV
OV
OV
Vee
OV
OV
5.0V
Vee
OV
OV
5.0 V
Limits
Output
Min.
Typ.
Max.
0.4
0.6
100
100
0.5
O.S
so V
SOV
150 rnA
300 rnA
OPEN
200
1.5
24
SO
1.75
30
100
Vs
INPUT
i~!lL---- Vln(O)
lSpF
I(NOIo5)
I
-:"lOAD
'pdO
, . - - - Vout (l)
OUTPuT
~~':.~I~-j
'---~--- - - - , - Vout(O)
DWb. NO • .1.-9135.1.
O"llG. NO. '-1900'
NOTES:
1. Typical values are at Vee = 5.0 V, TA = 25'C.
2. Per package.
3. Diode leakage current measured at VR = VoII(mln).
4. Diode forward voltage drop measured at If = 300 rnA.
5. Capacitance values specified include probe and test fixture capacitance.
2-30
Units
Notes
/lA
~
V
V
/lA
V
rnA
rnA
3
4
1; 2
1,2
SERIES UDS·5700H (Cont'd)
POWER DRIVERS WITH MIL-STD-883
HIGH-RELIABILITY SCREENING
Power drivers with high-reliability screening can be ordered by adding the suffix 'MIL' to the part number, for
example, UDS-5703H-MIL. If marking with the customer's part number is necessary in place of the Sprague
Electric part number, this must be stated on the purchase order with the marking desired.
Table I - 100% Production Screen Tests (All Hermetic Parts)
Mll-STD-883, Method 5004, Class B, Paragraphs 3.1.1 thru 3.1.6
MIL-STD-883
Test Method
Screen
I nternal Visual
Stabilization Bake
Thermal Shock
Constant Acceleration
Fine Seal
Gross Seal
Electrical
Marking
Conditions
201Q, Condo B
1008, Condo C
10 11, Condo A
2001, Condo E
1014, Condo A
1014, Condo C
150°C, 24 Hours
oto 100°C, 15 Cycles
30,000 G's, Yl Plane
5 x 10- 7 Maximum
Per. Specification
Sprague or customer pari number, date code, lot identification, index point
Table II -100% High-Reliability Screening ("Mil" Suffix Parts Only)
Method 5004, Class B, Paragraphs 3.1.9 thru 3.1.15 & 3.1.18
MIL~STD-883,
MIL-STD-883
Test Method
Screen
I nterim Electrical
Burn-In
Static Electrical
Dynamic & Functional Electrical
Fine Seal
Gross Seal
External Visual
Conditions
5005, Gp A, Subgp 1
lOIS, Condo A
5005, Gp A, Subgp 1
5005, Gp A, Subgp 2 & 3
5005, Gp A, Subgp 4, 7 & 9
1014, Condo A
1014, Condo C
2009
25°C per Specification
125°C, 160 Hours
25°C per Specification
-55°C & +125°C per Specification
25°C per Specification
5 x 10.7 Maximum
Table III - High-Reliability Qualification and Quality Conformance Inspection
MIL-STD-883, Method 5004, Class B, Paragraph 3.1.17
Test
MIL-STD-883
Test Method
Description
Group ASubgp. 1-4, 7 &9
Group B
Group C
Group D
5005, Table I
5005, r able II
5005, Table III
5005, Table IV
Each production lot
Each production lot
End points, Gp. A, Subgp. 1, every 90 days
End points, Gp. A, Subgp. 1, every 6 months
2-31
D
SERIES UDN·5700M
SERIES UDN-5700M DUAL
PERIPHERAL and POWER DRIVERS
-
TRANSIENT PROTECTED OUTPUTS
FEATURES
•
•
•
•
•
Type UDN.571IM
Dual AND Driver
Four Logic Types
DTL/TTL/PMOS/CMOS Compatible Inputs
Low I nput Current
300 rnA Continuous Output Current
Sustaining Voltage of 80 V
Description
These "mini-DIP" dual peripheral and power drivers are bi-polar monolithic
integrated circuits incorporating AND, NAND, OR, or NOR logic gates,
high-current switching transistors, and transient suppression diodes on the
same chip. The two output transistors are capable of simultaneously sinking
300 rnA continuously at ambient temperatures of up to +70°C. In the OFF
state, these drivers will sustain at least 80 V.
Type UDN·5712M
Dual NAND Driver
Applications
The Series UDN-5700M dual drivers are ideally suited for interface between
low-level or high-level logic and high-current/high-voltage loads. Typical
applications include driving peripheral loads such as incandescent lamps,
light-emitting diodes, memories, and heaters with a load current of up to
600 rnA.
The integral transient suppression diodes allow the use of these drivers
with inductive loads such as relays, solenoids, or stepping motors without
the need for discrete diodes. When not required for transient suppression,
the diode common bus can be used to perform the "lamp test" function.
Similar devices with four drivers per package are the Series UDN-S700A.
Type UDN·5713M
Dual OR Driver
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee•............................................... ZO V
Input Voltage, Vin ................................................. 30 V
Output Off-State Voltage, Voff......................................... SO V
Output On-State Sink Current, Ion.................................... 600 rnA
Suppression Diode Off-State Voltage, Vol!
... SO V
Suppression Diode On-State Current, Ion............................... 600 rnA
Operating Free-Air Temperature Range, TA.......................... O°C to +70°C
Storage Temperature Range, Ts............................... - 55°C to +150°C
Power Dissipation, Po............................................. 1.5 W
Each Driyer.................................................. O.S W
Derating Factor Above 25°C ........................... 12.5 mW/oC or SO°C/W
2-32
1lYIG.IIO.A-9788
Type UDN·5714M
Dual NOR Driver
SERIESUDN·5700M
(Cont'd)
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (Vee>:
Operating TemperatuLe Range
Current into any output (ON state)
Min.
Nom.
Max.
4.75
0
5.0
+25
Units
5.25
+70
300
V
°C
rnA
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Test Conditions
Characteristic
Symbol
Temp.
Driven
Input
Vee
Limits
Other
Input
Output
Min.
Typ.
Max.
Units
"1" Input Voltage
V;oOI
"0" Input Voltage
"0" Input Cllrrent at al/ Inputs
except Strobe
"0" Input Current at Strobe
Vin(O}
MIN
MIN
l;niOI
l;niO)
MAX
0.4 V
30 V
50
100
I'A
MAX
0.4 V
30 V
100
200
I'A
"1" Input Current at all Inputs
except Strobe
"1" Input Current at Strobe
Input Clamp Voltage
2.0
Notes
V
0.8
V
l;nl1l
MAX
30 V
OV
10
!LA
l;nill
VI
MAX
MIN
30 V
-12 rnA
OV
20
!LA
V.
-1.5
2
2
2
5.0V, TA
SWITCHING CHARACTERISTICS: Vee
Limits
Characteristic
.
Turn·on Delay Time
....
Turn·off Delay Time
Symbol
Test Conditions
tpdO
Vs - 70 V. Rl - 465" (10 Watts)
Min.
Cl~15.pf
tpdl
Vs ~ 70 V. Rl
Cl ~ 15 pF
Typ.
Max.
200
500
Units
ns
..'
~
465" (10 Watts)
NOTES:
I. Typicalvalues are at Vee .~ S.OV, h ~ 25°C.
2. Each input lestedseparately.
3. Voltage values shown. in the test circliit wavefurms are with respect to network ground terminal.
4. Capacitance values specified Include probe and test fixture capacitance.
2-33
300
750
ns
Notes
.,
3
3
INPUT PULSE CHARACTERISTICS
VlolOI ~ OV
tf ~ 7ns
tp ~ II'S
Vlo(1! ~ 3.5V
t, ~ 14ns
PRR ~ 500kHz
~_ _ _ _ _ _ _ _ _ _ _ _:--_ _..
D
SIRlES UDN-S700M
(Cont'd)
Type UDN-S711M Dual AND Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Temp.
Symbol
Characteristic
"I" Output Reverse Cu rrent
loff
"0" Output Voltage
Von
Diode Leakage Current
Diode Forward Voltage Drop
'T' Level Supply Current
"0" Level Supply Current
NOM
NOM
NOM
NOM
ILK
Vo
leC(l)
lee(o)
Test Conditions
Driven
Other
Input
Input
Vee
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
2.0V
2.0V
2.0V
2.0 V
0.8 V
0.8 V
OV
Vee
Vee
OV
Vee
5.0 V
OV
Vee
5.0V
OV
MAX
Limits
Min.
Output
Typ.
80 V
80 V
150mA
300 rnA
OPEN
0.35
0.5
1.5
8.0
35
Max.
Units
lOa
lOa
0.5
OJ
200
1.75
12
49
p.A
p.A
V
V
p.A
V
rnA
rnA
Notes
3
4
1,2
1,2
r
INPUT
~)O::':%::':"_ _ _ _ Vin(O)
10%
liN,,,,)
15pF
"::'
LOAD
'pd)
,
~
, j:r------,L'
--
,,0.
'pdO
--V,"Il)
OUTPUT
50%
CIRCUIT J
____
~WCi.
I
'1
50%
•
Vout(O)
\-L78A
OIfr'G. No. A-7628C
Type UDN-S712M Dual NAND Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
Temp.
Test Conditions
Other
Driven
Input
Input
Vee
"I" Output Reverse Current
loll
MIN
OPEN
"0" Output Voltage
Von
MIN
MIN
NOM
NOM
Diode Leakage Current
Diode Forward Voltage Drop
"I" Level Supply Current
"0" Level Supply Current
INPUT
2AY VCC-=SV 0 EN
ILK
Vo
lee(l)
lee(o)
au;:
NOM
NOM
NOM
NOM
MAX
MAX
0.8 V
0.8 V
2.0V
2.0 V
Vee
OV
OV
5.0V
Limits
Output
Vee
Vee
2.0V
80 V
80V
150 mA
2.0V
300 rnA
OPEN
Vee
OV
OV
5.0 V
Min.
Typ.
0.35
0.5
1.5
12
40
Vs
r ~- - -Rl
INPUT
~"'------ V'nIO)
'pdO
15pF
l,Not.5)
OUTPUT
";' LOAD
CIRCUIT
L ____
_
' - _ _..J._ - - - - -
-
DliG. MO.
DWG. NO. A-99~3
NOTES:
I. Typical values are at Vee = 5.0 V, TA = 25'C.
2. Per package.
3. Diode leakage current measured at VR = Vofl(mln).
4. Diode forward voltage drop measured at I, = 300 mA
5. Capacitance values specified include probe and test fixture capacitance.
2-34
Voul(O)
A-1900A
Max.
Units
Notes
lOa
lOa
0.5
OJ
200
1.75
15
53
p.A
p.A
V
V
p.A
V
rnA
rnA
4
5
1,2
1,2
SERIES UDN-5700M (Cont'd)
Type UDN-S713M Dual OR Driver
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
"I" Output Reverse Current
loff
"0" Output Voltage
Von
OiodeLeakage Current
Diode Forward Voltage Drop
"I" Level Supply Current
ILK
Vo
leClI}
leCiO}
"0" Level Supply Current
Temp.
Test Conditions
Driven
Other
Input
Input
Vee
NOM
NOM
NOM
NOM
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
MAX
OV
OV
O.SV
O.SV
OV
Vee
5.0 V
OV
Vee
5.0V
OV
I
INPUT
I~
Output
~OV
150mA
300 rnA
OPEN
- - - - -
Units
p.A
p.A
V
V
p.A
V
rnA
rnA
OJ
1.5
8.0
36
200
1.75
13
50
4
1,2
1,2
o
I
V'n(l}
u
I
,-
'1
r----.., ,
....,.jl~k
IpdO
5~ L::~::~:
OIiG. No. A-1628C
Type UDN-S714M Dual NOR Driver
LECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Symbol
"I" Output Reverse Current
loff
"0" Output Voltage
Von
Diode Leakage Current
Diode Forward Voltage Drop
"1" Level Supply Current
"0" Level Supply Current
INPUT
VCC=5V
OPEN
ILK
Vo
leell)
leelol
Temp.
Test Conditions
Driven
Other
Input
Input
Vee
NOM
NOM
NOM
NOM
MIN
OPEN
MIN
MIN
NOM
NOM
MAX
MAX
0.8 V
O.S V
2.0V
2.0 V
O.S V
0.8 V
OV
OV
Vee
OV
OV
5.0 V
Vee
OV
OV
5.0V
Limits
Output
Min.
SO V
80V
150 rnA
300 rnA
OPEN
Typ.
0.35
0.5
1.5
12
40
OUTPUT
-------1
R'l
I
INPLIT
"XJ.\""-_ _ _ _ _ V'n(O}
IpdO
OUTPUT
'---..1.- - - - - - -
Vovt(O)
OIiG. 110. '·7900A
,TES:
.. Typical values are at Vee ~ 5.0V, TA ~ 25"C.
!. Per package.
I. Diode leakage current measured at v. ~ Vofflm'n}.
I. Diode forward voltage drop measured at If ~ 300 rnA.
i. Capacitance values specified include probe and test fixture capacitance.
2-35
Notes
3
V'n(O)
I
,
---r---'i
O_U_T_PU_T_ _ _
Max.
100
100
0.5
0.35
0.5
-+1
,
,
,
Typ.
-.j I-- If
--...;,;;;.;;...; to--- Ie
Ipd I
Min.
gOV
t:: :k\~,~-
-i ~I
------,
Rl
2.0 V
2.0 V
0.8 V
0.8 V
OV
Limits
Max.
Units
Notes
100
100
0.5
0.7
200
1.75
15
50
p.A
p.A
V
V
p.A
V
rnA
rnA
3
4
1,2
1,2
THE UDN·5733A QUAD 2·INPUT POWER DRIVER IS SHOWN ON PAGE 2·26.
THE UDS·5733H HERMETICALLY·SEALED POWER DRIVER IS SHOWN ON PAGE 2·30.
2·36
UDS·5790H and UDS·5791H QUAD PIN DIODE POWER DRIVERS
UDS-5790H and UDS-5791H QUAD
PIN DIODE POWER DRIVERS
FEATURES
•
•
•
•
•
Inverting or Non-Inverting
Low Input Current
TTL, DTL, MOS Compatible
Wide Operating Voltage Range
High Output Breakdown Voltage
CONSISTING of four high.voltage NPN output
stages and associated logic a.nd level shifting,
these monolithic, planar integrated circuits offer an
easy solution to many PIN diode driving applications_
The UDS-S790H and UDS-579IH quad power
drivers are designed to replace discrete or hybrid PIN
diode drivers. They provide significant reductions in
cost and space with improved reliability. The UDSS790H driver uses a grounded-base input stage for
non-inverting operation while the UDS-S79IH driver
uses a common-emitter input stage for inverting operation. Both devices are capable of sustaining OFF
voltages of 120V and will switch currents to SOO mAo
The input buffer circuitry has been designed to
utilize external discrete resistors. The one-resistorper-driver effectively reduces total package power dissipation and junction temperature while allowing user
selection of output base drive current, power supply
voltages, and output current.
All devices are rated for operation over an extended
temperature range of -SsoC to +12SoC. They are
customarily supplied in 16-pin hermetic dual in-line
packages. All units are subjected to the 100% production screen tests specified in MIL-STD-883, Method
S004, Class B, paragraphs 3.1.1 through 3.1.6. On
special order, 160 hours of burn-in to Method lOIS,
Condition A, can also be performed.
2-37
D
DWG. MO. "'10, ~77
UDS·5790H
Vee
/"'
,-,-,-,oull
D'fIG. NO. A-IO, ..78
UDS·5791H
UpS-S79OH a~ UD5-S791H QUAD PIN DIODE P·OWER . DRIVERS (Cont'd)
ABSOLUTE MAXIMUM RATINGS over free-air operating temperature range
~~~~:~ ~~:!:::: ~~;'.'.'~::::::::::::::::::::::::::
:::.::::::::: ::::::::::::::::::: ::~:::::::::: ::::::::::::::: :~~:~~
Input Voltage, V,N ..............................................................................................Vee
Output OFF-State Voltage, VOFF (ref. VEE)" ..................................................................... +120 V
Output ON-State Current, ION ................................................................................• 500 mA
Package Power Dissipation, Po. . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . .. See Graph
Operating AmbientTemperatureRange, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature Range, Ts ............................................................, ......... "':65°C to +150°C
PARTIAL SCHEMATICS
.V,
Vee
9
,
Vee
'--~~-l
<\Is
T R,
r,,
R,
T
I
+-----,
,,,
,,,
16
I
I
I
,
R.
I
,
,
,,
I
I
,
I
I
I
-t
IN
--41
4~
,
ffiPIN
~OI00E
I
I
I
~RL
I
• RL
,I
,I
'*'
~ •••
".IO._
'*'
ONE OF' FOUR DRIVERS
UDS-5791H
ONE OF .. FOUR PlIVERS
UDS·5790H
RECOMMENDED OPERATING CONDITIONS
Min. Nom. Max. Units
Supply Voltage, Vee.. . •. . . . . •. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . 4.5
5.0
5.5 V
Supply Voltage, VEE ......................................................... : ........... -1.5 -3.0 .,..5.5 V
Output ON-State Current, ION .......................................... " . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . 300 mA
Operating Ambient Temperature Range, TA •••••••••••••••••••••••••••••••••••••••••••••••• -55 +85 +125 °C
2-38
UDS·579OH and UQS-.5791 H QVAQ ,PIN.OlODE POWER DRIVERScCCont'd)
~~7
r----.r----.-----.-----.--~,
~
a
6
il:
5 f---~~
~
Q
~
~ • t----t----""~
~ 3t---~r---~~~~----~----~
"
~
;
2 f-------lf-.-;~-
~
~
1
:j
t---.,--~~
«
150
0.;.1IO.A-10,'98A
o
STATIC ELECTRICAL CHARACT£RISIICS over operating temperature range
(unless otherwise noted)
<
Characteristic
"1" Input Voltage
"0'.' Inptlt Voltage
"I" Input Current
''0'' Input Current
OFF-State
Reverse Current
ON-State
Output Voltage
(ref. VEE)
Symbol
VIN!1I
VINlO)
11N(1)
"N(O)
10fP
VON
Vec VEE VIN VOFF ·or I.oN
mA
+V -V +V +V
.
4.5
4.5
5;5 ,M 5.0
5.5 3.0 5.0
5.5 3.0 0.4 ..
, 5.5 3.0 0.4
115 ...
+25 4.5 . 3.0
115
+125 4.5 3.0
-55 4.5 1.5
150
Temp.
°Ci
300
+85
4.5
1.5
ISO
+125
4.5
1.5
V'I,
4.5
1.5"
j •.
los
4.5
3.0
-2.3
Icc:
5.5
5.5
Icc
5.5
5.5
300
,
Predriver
Collector Voltage
(ref. VEE)
Output Short·Circuit
Current
OFF· State
Supply Current
ON·State
Supply Current
lllrn·On Delay
Storage Delay
Fall Time
t...
to
.t,'.
-
-
5.0 3.0
.5.013.0
5.0 13i'O
NOTES.
1. Type UDS-5790HQnly.'
2. Type UDS-5191H only.
,
3. VIN - ~.4 VforUDS·579OH or 0.4 Vfor UDS·5791H.
4. VIN - 0.4 Vfor UDS·5190H or 2.4 Vfor UDS·5191H.
5~ Each output tested separately.
:"
150
300
'ISO
300
11
-
-
-
-
-
-
SO
mA
3,5
-
3.4
mA
3
4.1
mA
4
-
SOD
-
5.0
100,
-
-
-720
360
720
360
720
360
720
360
510
-
20
Min.
2.0
--
{,
-
-
1.0
SO
100
400
600
400
700
500
850
1.3
1.5
Limits
Units
V
V
mA
lolA
p.A
mA
uA
fJ,A
mV
mV
mV
mV
mV
mV
V
V
Rx
510
510
510
'"
k,
-
-
-
-
Max.
4.0
0.8
1.0
50
SO
nS
ps
nS
tt)
Notes
1
2
1
2
3
3
45
45
45
4.5
45
45
45
4,5
UDS.579011 ... tJI)$o:5791 H 'QUID PIN ,D1ODEPOWER DRIVERS (Coni'd)
SWITCHING TEST CIRCUIT
AND WAVEFORMS'
1lWG.1I0.A.-JO.6!)1I
UDS·579OH
UDS·5791H
~
50%
'."
"
,
I
I
,.
10%
I
1
~onjoo1
.90%:
I
~2".V-
~90%
-J:--.:~
'90%
v'
1
SO%
< HI
V N .
-"
I
I
1·1
-r t,
'"1\>01--
..r t,
•
~
I
,I
'
.. ltlOV.~1
•
I
.
You
,. " I
~ -2.3V-'
.
'
1
1
SO%
T
:
10%'
.
10%
..}r:'DlG.110. A-ro.6SS
GENERAL DESIGN NOTES
, where,
B =30, the minimum outpot currentgain' over the operating temperature range'
Vx = 1.5, the maximum predriver voltage'
It is recommended that a minimum overdrive of 25% to be used (1.25 IRX or O.8 RX)'
2-40
UDS-5790H and UDS-5791H QUAD PIN DIODE POWER DRivERS (Cont'd)
POWER DRIVERS WITH MIL-STD-883
HIGH-RELIABILITY SCREENING
Power drivers with high-reliability screening can be ordered by adding the suffix "MIL" to the part number, for
example, UDS-S790H-MIL. If marking with the customers part number is necessary in place of the Sprague
Electric part number, this must be stated on the purchase order with the marking desired.
Table I -100% Production Screen Tests (All Hermetic Parts)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.1 thru 3.1.6
MIL·STD·883
Test Method
Screen
I nternal Visual
Stabilization Bake
Thermal Shock
Constant Acceleration
Fine Seal
Gross Seal
Electrical
Marking
Conditions
2010, Condo B
1008, Condo C
lOll, Condo A
2001, Condo E
1014, Condo A
1014, Condo C
150°C, 24 Hours
oto 100°C, 15 Cycles
30,000 G's, VI Plane
5 x 10. 7Maximum
Per Specification .
Sprague or customer part number, date code, lot identifica·
tion, index pOint
Table II -100% High-Reliability Screening ("MIL" Suffix Parts Only)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.9 thru 3.1.15 & 3.1.18
MIL·STD·883
Test Method
Screen
Interim Electrical
Burn·ln
Static Electrical
Dynamic & Functional Electrical
Fine Seal
Gross Seal
External Visual
Conditions
5005, Gp A, Subgp 1
1015, Condo A
5005, Gp A, Subgp 1
5005, Gp A, Subgp 2 & 3
5005, Gp A, Subgp 4, 7 & 9
1014, Condo A
1014, Condo C
2009
25°C per Specification
125°C, 160 Hours
25°C per Specification
_55° & +125°C per Specification
25°C per Specification
5 x 10'7 Maximum
Table III - High-Reliability Qualification and Quality Conformance Inspection
MIL-STD-883, Method 5004, Class B, Paragraph 3.1.17
Test
MIL·STD·883
Test Method
Description
Group A Subgp. 1·4, 7 & 9
Group B
Group C
Group D
5005, Table I
5005, Table II
5005, Table III
5005, Table IV
Each production lot
Each production lot
End points, Gp. A, Subgp. 1, every 90 days
End points, Gp. A, Subgp. 1, every 6 months
2·41
D
r>
HIGH·VOLTAGE DISPLAY DRIVERS
-120 V to + 130 V 5 to 8 Drivers
I
L . . - - - - - _
Device Type
Data
Applications
UHP-480 and 481
UHP-482
UHO-4.~O and 491
UHP-490 and 491
UHP-495
UON'-6116Aanli SIISA-2
UON-SlisR and S116R-2
UON,6H8A and si 18A-2
UON-61l8R and 6118R-2
UON-6126A and SI2SA-2
UON'-612SRand 6126R-2
UON-SIZ8Aand S128A-2
UON-6128R and. S128R-2
UON-SI44 and 6164A
UDN-SIB4A
UON.7lBO thru 1186A
3-2
3-2
3-5
3-5
3-7
3-9
3-9
3-9
3-9
3-9
3-9
3-9
3-9
3-13
3-13
3-l7'
7-4
Device Type
UHP·480>
UHP-481
UHP-482
UH( )-490
UH( )-491
UHP-4g5
UON'-6U6' and 6126A/R
UON-6116 and S12SAlR-2
UDN-61I8 and' 6128A/R
UON-6118 and 6i28A/R-2
UO~.144A
UDN-6164A
UON-S184A
UON.7180A
UON-7183A
UDN.7184A
UON·71:S6A
IE
10
48
IE
IE
IE
38
10
3A
IE
38
10
3A
IE
.10
10
7-4
7-10
7-10
7-4, 27
7-:~, 27
lOUT
15 rnA
15 rnA .
J5 rnA.
..,.3a,rnA
':"'30 rnA
.-30 rnA
-40 rnA
-40 rnA
.;..40 rnA
-40 rnA
-70 rnA
-70 rnA
-70 rnA
20 rnA
3:25 rnA
'2.0 rnA
1.0 rnA
3-1
VOUT
Outputs
130 V
130.V
130 V
-80 V
-80 V
-80 V
85 V
65 V
85V
65 V
120 V
120 V
120 V
-120 V
~120 V
-120 V
-120 V
Sink 5
Sink 7
Sink 8
Source 5
Source S
Source 6
Source 6
Source 6
Source 8.
Source 8 '
Source 4
Source 6
Source 8
Sink 8.
Sink 8
Sink 8
Sink 8
f
0_
II
SERIES UHP-480
SERIES UHP·480
HIGH·VOLTAGE DISPLAY DRIVERS
INPUT
NC
NC
FEATURES
COMMON
e Reliable Monolithic Integrated Construction
elow Output leakage Current
e High-Voltage Output Capability
e Small Size
e 130 Volt Breakdown
EMITTERS
UHP-AIO
lA-Lead Dual In-Line
INPUT
Description
NC
The Series UHP-480 high-voltage display drivers are bipolar monolithic
integrated circuits designed for interface between MOS or open collector
TTL logic and gas discharge displays such as the Burroughs Panaplex®,
the Cherry Plasma-Lux and the Beckman SP Series. These drivers replace
the major portion of discrete components typically required to interface
between an MOS calculator or counter/decoder circuit and the gas discharge display. They are high-voltage switches intended for use in the
cathode portion ofthe display and are available with either 5 (UHP-480), 7
(UHP-481), or 8 (UHP-482) switches per dual in-line package.
INPUTS
OIl'G.NO.A-9237A
UHP-All
16-Lead Dual In-Line
Applications
The Series UHP-480 devices may be used in gas discharge applications
which include calculators, DVM's, DMM's, DPM's, mini-computers,
clocks, etc. Their high reliability coupled with small size make them an
excellent choice for those applications where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
INPUT
NC
INPUTS
Output Voltage. . . .
. ... l30V
Output Sink Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . ....... 15rnA
I nput Voltage. . . . . . . . . . . . . . . .
. ..... 30V
Diode Forward Current.. . . . . . . . . . . . . . . . . . . . . . . .
. ... 50mA
Operating Temperature Range. .. .....
DOC to + 70°C
Storage Temperature Range.................................. -65°C to +150°C
UHP-A82
II-Lead Dual In-Line
3-2
SERIES UHP-480 (Cont' d)
ELECTRICAL CHARACTERISTICS @ TA
ICE)(
Output Leakage Current
Input Current
liN
Output Saturation Voltage
Turn-on Delay Time
Turn-off Delay Ti me
VCElSAn
TPHL
TPLH
25°C unless otherwise specified
Test Cond itions
VIN = 4V, VCE = 5V
VIN = 5V, VCE = 5V
VIN "" 6V, VCE = 5V
VIN = 7V, VCE - SV
VIN = OV, VCE = 130V
VN - OV, VCE - 130V, TA - 70°t;
VIN = 7V
VIN = lSV
louT = S.5mA, VIN = 9V
RL - 56k11, Vcc - IJUV
RL = S6k11, Vcc = l30V
Symbol
loUT
Characteristic
Output Sink Current
=
Min.
2.0
3.0
Limits
Max.
Typ.
5.~
-
7.0
-
4.U
!I.U
-
5.0
~.U
-
-
0.2
1.5
1.5
l~
200
490
350
700
Units
rnA
rnA
rnA
rnA
J.LA
J.LA
J.LA
rnA
v
l.J
Z.!l
-
L.
0
J.Ls
-
Z
!l,
J.Ls
D
OUTPUT
INPUT
o--.-o/IN--r---I
30K
10K
EMITTER
UHP-..'O, "'1, and "'2 (1 Driver)
Due to the high input impedance of these devices, they are susceptable to static discharge damage sometimes associated with handling
and testing. Therefore, techniques similar to those used for handling
MOS devices should be employed. (See Page 5-2).
3-3
SERIES UHP-480(Cont'd)
-,
J::""
-=n
~
D5
u,
,-------,
M,
,
'A'A
,
"
0
0
><
X
f
f
"
0
:>
I
0
/AV
AVAVA
'VVV
'
2:> 2E -6g
i
.I
"
~j
r- r- (~I
,VAVAV
()
5t--
SUB
t-
t-It-I-
c..
:::c
D
D
DJ
-16 to
-18V
VSS
,
V DD
MOSTEK MK5017
~ t--.r-t-.. - i16CH394~9PM
.
- --
...
'-Y''-=--~'-.;::..~~
;.~>.
:>
>~~A
-- ,
,
-----
,
I
t>- ~'
~:
-- ----I
216CK393X9NRA
~--I
;;.; 1
<;>
:
'AA<;>~>:>I
I
. A'
I
I
i'-
lEI
:~A
1
I
'y
- 2l6cK393X9NRA _I
SA
SB
Sc
SI)
SE
~
lSG
-,1-
>1
<.A
;:;;,
~,
...AN\,
-AN\,
~I
"'I
0
~;
"'I
--
g,
- - -- -
<
'---< -40V
,
:
- -
~
~
::J
J.
1,
I,
I I
I,
-
,,
- - - -.AA-~YAYAV
;>
LAVAVA
""
,,,,0
:>
~
t--tt--ttsrrB
b -200V
OWG. NO.
Type 206C and 216C are single in-line networks
TYPICAL CLOCK APPLICATION
3-4
,x
,~
,~
-: :-~ ~T_T- --- -:'"
.....
,
c..
:::c
.----
Ig
00
'
A-9~13A
-50V
-90V
6-200V
SERIES 490 and 491
SERIES 490 and 491
HIGH ...VOLTAGE DISPLAY DRIVERS
•
•
•
•
OUTPUTS
INPUTS
FEATURES
Reliable Monolithic I ntegrated Construction
Low Output Leakage Currents
High Output Breakdown Voltages
Small Size
NC
SUBSTRATE
VSS
Description
The Series 490 and 491 high-voltage display drivers are bipolar monolithic
integrated circuits designed for interfacing MOS or other low-voltage circuitry with high-voltage gas discharge displays Of loads .. These drivers replace most of the discrete components normally required to drive multiplexed
gas discharge displays from MOS calculator or clock circuits. The Series
490 and 491 high-voltage display drivers are intended for use in the anode
portion of the display and are available with either 5 (Series 490) or 6
(Series 491) drivers per dual in-line package.
UHD-490
UHp·490
o
Applications
The Series 490 and 491 may be used in a variety of low-voltage to highvoltage interfacing applications such as are found in MOS calculators, digital
clocks, etc. Their high reliability and small size make them an excellent
choice for those applications where space is at a premium.
INPUTS
OUTPUTS
VSS
SUBSTRATE
Packages
Package
Part
Number
Drivers/
Package
14-Lead Hermetic
Dual In-line
UHD-490
5
l4-Lead Plastic
Dual In-line
UHP-490
5
16-Lead Hermetic
Dual In-line
UHD-491
6
16-Lead Plastic
Dual In-line
UHP-491
6
NC
D'IIG.MO . .t.-9303
UHD·491
UHp·491
ABSOLUTE MAXIMUM RATINGS
(referenced to V ss)
Output Voltage. _......... _.. " .......................................................................... -80V
Output Source Current. ...................................................................................30mA
VDO Supply Voltage ...................................................................................... -30V
Input Voltage ........................ _. _.. _.... _...... _.. _..... __ ....... _....................... _....... -30V
Input Diode Forward Current.. _.......... _........ : ...... _.. ; ...... ___ .... _...... ___ .................. _... 20mA
Operating Temperature Range:
UHP·490, UHP·491. .. _... ._ ... _.. ____ ........ _.. _... ___ .... _....... _. _............. _.... .. O°C to +70°C
UHD·490, UHD·491 .. _.. _....... _. _ .. _.... __ .. _.... __ . _. . . . .. . .. _.. __ .. _.. _. _. _. _. __ .. _. _. _- WC to + 125°C
Storage Temperature Range. _..... ___ ... _..... _.. _.. _... __ .... __ . _.. __ ... __ . ___ ..... ___ ..... _-65°C to +150°C
Note: The substrate pin must be connected to a voltage potential equal to or greater than the most negative operating voltage applied to the device.
3-5
SERIES 490 and 491 (Cont'd)
ELECTRICAL CHARACTERISTICS
@
TA
=
25°C (unless otherwise specified)
Limits
Test Conditions
Characteristic
Min.
-
"1" Input Voltage
V
Voo+6
-
V
1.5
VIN = Voo+2.5V, Vss = BOV, TA = 70°C
-
15
p.A
p.A
VIN = Voo+6V, louT = 5mA
-
VIN = Voo+2.5V, Vss = BOV
Output Saturation Voltage
Voo+2.5
Units
-
"0" Input Voltage
Output Lea kage Cu rrent
Max.
2
V
V
VIN = VDo+6V, louT = 15mA
-
5
Input Current
VIN = Vss, louT = 15mA
-
400
p,A
100 Supply Current
VIN = Vss, louT = 15mA
-
2
10 = 20mA
Rl = 4kn
Rl = 4kn
-
2
3
-
5
rnA
V
p,s
p's
Input Diode Forward Voltage
Turn·on Delay Time
Turn-off Delay Time
INPUT
50.
c>--..---NV---~-t
10K
2K
T
SUBSTRATE
OUTPUT
Series 490 and 491(1 Driver)
Due to the high input impedance of these devices, they are susceptable to static discharge damage sometimes associated with handling
and testing. Therefore, techniques similar to those used for handling
MOS devices should be employed. (See Page 5-2).
3-6
UHP·495
TYPE UHP-495
HIGH-VOLTAGE DISPLAY DRIVERS
FEATURES
•
•
•
•
Reliable Monolithic I ntegrated Construction
Low Output Leakage Currents
High Output Breakdown Voltages
Small Size
INPUTS
THE TYPE UHP-495 High-Voltage Display Driver is a bipolar monolithic
integrated circuit designed for interfacing MOS or other low-voltage
circuitry with high-voltage gas discharge displays or loads. This driver replaces most of the discrete components normally required to drive multiplexed gas discharge displays from MOS calculator or clock circuits. The
UHP-495 high voltage display driver is intended for use in the anode portion
of the display and is available with 6 drivers per dual in-line package.
Vss
DWG.
~O.
A-9577A
D
Applications
The UHP-495 may be used in a variety oflow-voltage to high-voltage interfacing applications such as are found in MOS calculators, digital clocks, etc.
Its high reliability and small size make it an excellent choice for those applications where space is at a premium.
NEG. ADDRESS
Partial Schematic
One of Six Drivers
ABSOLUTE MAXIMUM RATINGS
(referenced to Vss)
Output Voltage ............. .
Output Source Current.
I nput Voltage .............. .
Input Diode Forward Current. .... .
Operating Temperature Range .. .
Storage Temperature Range.
.-80V
.. 30mA
. .-30V
.20mA
. .. O°C to +70°C
. . -65°C to + 150°C
Note: The susbstrate pin must be connected to a voltage potential equal to or graaler than the most negative operating voltage applied to the device.
3-7
UHP~495 '.(Cont'd)
d
ELECTRICAL CHARACTERISTICS at TA = 25°C, Yss = 0 Y, .YSUB' = -80 Y
(unless otherwise specified)
< ",<
Characteristic
Input Voltage
:. ",
Input Current
Output Saturation Voltage
Output Lea~age Current
Substrate Current
Substrate Leakage Current
Diode Forward Voltage '
Diode Breakdown Voltage
Tum-on Delay Time
Turn-off Delay Time
Symbol
VIN
liN
VCE(SAT)
ICE!
IsuB
,
Vr
BV R
tPHl
tpLH
:
",
I
<
Test Conditions
loUT = 15 rnA, VooT ~ -5, V
VIN - -12 V
VIN - -6 V, lOOT - 15 rnA
VOUT - -80 V
VIII = -6 V, lOUT = 1 rnA
VOUT = 0 V, Vss = open
IF -20 rnA
Min.
Rl = 6.8 kG
Rl = 6.8 kG
-
*:
""~----~~
39K - - -
:- -
yr>JK:
: 390K
-
-
-
L5
-
0.4
1.6
50
3.0
3.0
1.5
2:0
7.0
7.0
400
-
-
_
SCS8SA
-
jTYPICAL CLOCK APPLICATION
Limits
Max.
-6.0
850
5.0
1.5
NATIONAL
MM5311
'
SGSFSESD
-39K - -;
-3.5
600
2.0
-
30
L ____
f-C)(-L,!=\(-'-lfXIf-D\2J6CH394X9PM
- - -
Typ.
"'100
Units
V
pA
. V
pA
rnA
pA
V
V
IJS
IJS
UDN·6116A, UDN·6118A, UDN·6126A, UDN·6128A
UDN-6116A. UDN-6118A. UDN-6126A. UDN-6128A
FLUORESCENT DISPLA Y DRIVERS
FEATURES
•
•
•
•
•
•
Digit or Segment Drivers
Low Input Current
I ntegral Output Pulldown Resistors
Low Power
Reliable Monolithic Construction
High Output Breakdown Voltage
UDN-6116A
UDN·6126A
CONSISTING of six or eight NPN Darlington output stages and the associated common-emitter input
stages, Type UDN-6116A, UDN-6118A, UDN6126A and UDN-6128A display drivers are designed
to interface between low-level digital logic and
vacuum fluorescent displays. All devices are capable
of driving the digits and/or segments of these
displays and are designed to permit all outputs to be
activated simultaneously. Pulldown resistors are incorporated into each output and no external components are required for most fluorescent display
applications.
The Type UDN-6116A and UDN-6118A devices
are compatible with TTL, Schottky TTL, DTL, and
5 volt CMOS. The Type UDN-6126A and UDN6128A devices are intended for use with MOS
(PMOS or CMOS) logic operating from supply
voltages of 6 V to 15 V. With any device, the output
load is activated when the input is pulled towards the
positive supply (active 'high').
UDN·6118A
UDN·6128A
The standard UDN-61l6A, UDN-6118A, UDN6126A, and UDN-6128A display drivers are rated for
continuous operation with supply voltages of up to
80 V. Lower-cost devices for operation at supply
voltages of up to 60 V are specified by adding the suffix "- 2" to the part number. All devices are nor"
mally supplied in dual in-line plastic packages. They
can also be supplied, with reduced package power
capability, in military-grade hermetic packages to the
processing and environmental requirements of
Military Standard MIL-STD-883, or industrial grade
dual in-line hermetic packages. To order, change the
last letter of the part number from "A" to "H" or
"R", respectively.
3-9
D
UDN·6116A, UDN·6118A, UDN·6126A, UDN·6128A (Cont'd)
1.5
ABSOLUTE MAXIMUM RATINGS at 25°(
Free·Air Temperature
~
"~
Supply Voltage Range, VBB (UDN-6116Jl8126128A) .... 5.0 Vto 85 V
(UDN-6116/18126I28A-2) ... 5.0 Vto 65 V
Output Voltage, VOUT (UDN-6116/18126I28A) ................ 85 V
(UDN-6116!l8126128A-2). . ........... 65 V
Input Voltage, VIN ...................................... 20 V
Output Current, lOUT ................................. 40 mA
Power Dissipation, PD .•.........••......•..•...... See Graph
Operating Temperature Range, TA ............ . .... O°C to + 70°C
Storage Temperature Range, Ts ................. -55°C to +150°C
~
..........
~
"N\
6;
16
'p
'/
"-
....... ~....,
...... ' ..
~
o
o
"f"....'.......
100
50
AMBIENT TEMPERATURE, TA IN
150
°c
PARTIAL SCHEMATIC
ONE OF SIX DRIVERS (UDN-6l16/26A)
ONE OF EIGHT DRIVERS (UDN-6118/28A)
INPUT o---N'."-""--<.--.........
'--+---oOUTPUT
RS
125K
GNO~----~~~--
______- - J
Type
UDN-6116/18A
UDN-6126/28A
DWG.t:O. A-IO.592A
TYPICAL STAGE
3-10
R'N
10 kn
20 kn
RB
30 kn
20 kn
UDN-6116A, UDN-6118A, UDN-6126A, UDN-6128A(Cont'd)
ELECTRICAL CHARACTERISTICS Over Operating Temperature Range; VBB
UDN·6116/18/26/28A, VBB
60 V For UDN-6116/18/26/28A-2
(Unle•• Otherwi.e Specified)
=
Characteristic
Symbol
Output Leakage Current
Output OFF Voltage
uutputPulidown Gurrent
lOUT
VOUT
lOUT
Uutput uN Voltage
VOUT
Input ON Current
Supply Current
liN
ISB
Applicable Devices
Test Conditions
All
All
UDN-6116/18126128A
UDN-6116il8l26128A-2
UON-6116/18A
UDN-611S/18A-2
UDN-6126/28A
UDN-6126128A-2
UDN-61161l8A and
UDN-61161l8A-2
UDN-6126128A and
UDN-6126128A-2
All
UDN-6116A
UDN-6116A-2
UDN-6118A
UDN-6118A-2
UDN-6126A
UDN-6126A-2
UDN-6128A
UDN-6128A-2
VIN = 0.4 V
VIN ...,. 0.4 V, TA - 25°C
Input Open, TA - 25°C,
VOUT = Vss
VIN - 2.4 V, lOUT - 25mA
Min.
-500
-375
77
57
VIN
= 4.0 V,
lOUT = 25mA
77
57
VIN = 2.4 V, TA = 25°C
VIN - 5.0 V, TA - 25°C
VIN = 4.0 V, TA = 25°C
VIN = 15 V, TA = 25°C
All Inputs Open
All Inputs = 2.4 V
-
-,
-
-
All Inputs
= 2.4 V
-
All Inputs
= 4.0 V
-
All Inputs = 4.0 V
-
=
limits
Typ.
-640
-480
78
58
78
58
120
375
130
675
10
5.0
4.0
6.0
5.5
5.0
4.0
6.0
5.5
80 V For
Max.
Units
15
1.0
-900
-675
!JA
-
V
V
V
V
-
-
V
!JA
!JA
!JA
!JA
!JA
!JA
!JA
200
600
200
1000
100
7.5
6.0
9.0
8.0
7.5
6.0
9.0
8.0
mA
mA
mA
mA
mA
mA
mA
mA
70
50
15
15
25
V
V
V
V
mA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage
VBB
Input ON Voltage
VIN
Output ON Current
lOUT
UDN-6116/18126128A
UDN-6116/18126I28A-2
UDN-6116/18A, 6116/1BA-2
UDN-6126128A, S126/28A-2
All
3-11
5.0
5.0
2.4
4.0
-
-
-
-
II
UDN.6116A, UDN·6118A, UDN·6126A, and UDN·6128A (Cont'd)
SEGMENT SELECT
UDN-6118/28A
TYPICAL
MULTIPLEXED
FLUORESCENT
DISPLAY
3-12
TYPE UDN·6144A, UDN·6164A, AND UDN·6184A
TYPE UDN c6144A
(FOUR DRIVERS)
TYPE UDN-6144A, UDN-6164A,
AND UDN-6184A GAS DISCHARGE
DISPLAY DIGIT DRIVERS
FEATURES
• Reliable Monolithic Construction
• High Output Breakdown Voltage
• High Output Current Capability
• Low Power
• Minimum Size
Description
Designed for interfacing between MaS, or other low-voltage circuitry, and
the anode of gas discharge display panels. these monolithic high-voltage bipolar integrated circuits dramatically reduce the number of discrete components previously required. The Types UDN-6144A, UDN-6164A, and
U DN"6184A are used with multiplex.ed gas discharge display panels, such as
TYPE UDN·6164A
(SIX DRIVERS)
IJ
the Burroughs Panaplex®, the Cherry Plasma-Lux, and the Beckman SP
Series in calculator, clock, or instrumentation applications. Each driver
contains appropriate level shifting, signal amplification, output off state voltage bias, and 70rnA output current sourcing for the sequent:al addressing of
display panel anodes. The inputs include pull-down resistors for direct connection to open drain PMOS logic.
The Type UDN-6l44A contains four complete drivers, while the Type
UDN-6l64A contains six drivers and the Type UDN-6l84A contains eight
drivers. Applications with a greater number of digits may use any combination of units for minimum package count.
TYPE UDN·6184A
(EIGHT DRIVERS)
Applications
The devices can be used in a wide variety of low-level to high-voltage applications. Their high reliability, minimum size, ease of installation, and low
cost make them the idealchoice in many applications. A typical application
showing the use of these devices, and their counterpart cathode drivers, is
shown.
Due to the high input impedance of these devices, they are suscep·
table to static discharge damage sometimes associated with handling
and testing. Therefore, techniques similar to those used for handling
MOS devices should be employed. (See Page 5·2).
3-13
"PE UDN·6144A, UDN·6164A, ANDUDN·6184A (Cont'd)
ABSOLUTE MAXIMUM RATINGS AT 25°C
Supply Voltage, VBB ............................................. + 120 V
Input Voltage, VIN ..................................... , ......... +20 V
Output Current, lOUT............................................. 70 mA
Power Dissipation, PD:
UDN-6144/64A............................................... 1.0 W*
UDN-6184A................................. , ............... 1.13 Wt
Operating Temperature Range, TA............................... DOC to +7DoC
Storage Temperature Range, TS.............................. -65°C to + 150°C
"Derating Factor above 25°C: -8 mW/oC
tDerating Factor above 25°C: -9.1 mW/oC
PARTIAL SCHEMATI C
ONE OF FOUR DRIVERS (UDN-6144A)
ONE OF SIX DRIVERS (UDN-6164A)
COMMON BIASING NETWORK
ONE OF £IGHT DRIVERS {UDN-6184A}
I - - - - - - - - - - - - - - - - - - - - - - -,
VBB
930K
450K
GNO
ELECTRICAL CHARACTERISTICS: TA = +25°C, VB8 =+110V
(unless otherwise specifted)
Characteristic
Symbol
Output ON Voltage
Output OFF Voltage
VON
Input High Current
Input Low Current
Supply Current
IIH
III
I••
VOFF
Test Conditions
Test input at4.SY Other inputs at 0.5Y, lOUT = 20mA
Test input at 0.5Y, One input at 4.5V All other inputs open,
Reference VeB
Test input at 15Y, Other inputs at OY
Test input at OV, One input at 15V, All other inputs at OV
Ooe input at 4.5V Other inputs at O.5V; All outputs open,
Repeat for all inputs
All inputs at OV, All outputs open
NOTES:
I. All voltage measurements are referenced to Ground terminal unless otherwise specified.
2. All voltage measurements are made with 10M !l, DVM or VTVM.
3. Recommended V•• operating range: +85Yto 1l0V.
3-14
Test
Fig.
Min.
Typ.
Limits
Max.
Units
1
105
108
-
V
2
3
4
-68
330
-
-73
250
-I
-
-
-5
V
!J.A
p.A
5A
58
-
450
85
750
125
!J.A
!J.A
"PI UDN-6144A, UDN-6164A, AND UDN-6184A (Cont'd)
+11OV
+l1OV
OP~N
FIGURE 2
FIGURE 1
+11OV
+110V
II
FIGURE 4
FIGURE 3
+1lp¥
+110V
D\OI6. HO. A_!)1"9A
FIGURE $A
FIGURE $8
TYPE UDN·6144A, UDN·6164A, AND UDN·6184A (Cont'd)
TYPICAL APPLICATION
'55
~'OS
LOGIC
TYPICAL
SIX~DIGIT
CLOCK
ID
6 lDs
~
1-
.
lDcol 1'~;~52
1 _I· _, 1 1
I 1- . _, I
PM
L
BURROUGHS
CD60733CM
elM
*
PNr-~
'06
L34
~
Dt
-'
D3
2
HOURS
T N MINUJES
-'-1"
MEDOr~~SET
BRIGHT
II
6 H
~
'"
~
~
V>
~
:::>
~
.--'"
00
~
~
Z
5=!
'"
'":::>
:;;
,L-..:--.
~
DISPlA
COUNT
...al.NH181T -L-
ANERI CAN
1M GNETI CS
AM6612
]
T
...
L...
.
f
~1--'N5859
-=-
+l00V
~
T
~
LoL
T
-IOOV
3-16
*
-=-
'I--
~1--S
SA
KK
'--
t1
,- ,::, CJ
D3
D2
Dl
SERIES UDtf· 7180.
SERIES UDN-718QA
GAS DISCHARGE DISPLAY
SEGMENT DRIVERS
FEATURES
•
•
•
•
Reliable Monolithic Construction
High Output Breakdown Voltage
Low Power
Minimum Size
Description
Series UDN-71S0A segment Qrivers lire monolithic high-voltage bipolar
integrated Circuits for interfacing between MOS or other low-voltage circuits and the.<:athode of gas-disch~rge display panels.
"These drivers reduce su~stantiany the number of discrete components
required with panels (Beckman, Burroughs, Dale, M!llsushita, NEC, Pantek,: etc) in calculator, clock and i~~trumentation applicatioJ;ls.
The UDN-71S3A, UDN-71S4A, and UDN-71S6A drivers contain appropriateleve( shifting, si/malamplification, currentliiI1~ting, and output
OFF-state voltage bias. The UDN-71S0A driver. requires .extenial current
. limiting and is inteItded for higher-current applications orwheieindividual
outputs are operated at different current leveIS.(i.e. with alpha-numeric
dis~IIlYs). ~II inputs have pull-down resistors for direct connection to opendrain PMOS logi(}.
t.
Allclevic~ are customarily furnished for use with 12
CMOS, or other high~.level output logic devices.
to 25 V
PMOS,
These devices provide output currents suitable for display segments in a
wide variety of display sizes and. number of display digits ...Either the fixeq,
split supplY qperation or the feedback controlled sch~meis allowed.
Applications
The series UDN-71S0A drivers can be used in a wide variety of low-level
to high-voltage applications utilizing gas discharge displays such as those
found in calculators, clocks, point-of-sale terminals, and instruements.
Their high reliability cOiI1bined witp lIlinimum size, ease of instaiiation, and
t~e cost advantages of complete mon6litliic interface ril!jke thein the ideal
choice in, '?lany applications .. A typical applicati9n show~ri~, theu,se of these
devices, and their counterpart anod~ dr!vets, is shown. ..·.t.
.
a
These devices were formerly known under the Developmental No. UDD·7183 and UDD·7186.
3-17
D
SERIES UDN·7180A (Cont'd)
ABSOLUTE MAXIMUM RATINGS
(Referenced to Terminal 9)
Supply Voltage, VKK .
Input Voltage, V'N ..
Output Current, louT: UDN-7180A ..
UDN-7183A.
UDN-7184A ..
UDN-7186A.
Power Dissipation, at 70°C, Po.
Operating Temperature Range, TA
Storage Temperature Range, Ts .
. -120 V
+20V
. ...... 20mA
. .... 3.25 mA
.2.0 mA
.1.0 mA
.725 mW*
.......
.ooe to +70 e
0
. -65°C to +150°C
'Derate at the rate of 9.1 mWrC above 70°C.
ELECTRICAL CHARACTERISTICS: TA
+25°C, V KK
=
=,
-110 V
(unless otherwise specifled)
Cha racteristic
Output ON Voltage
UDN-7183/84/86A
uutput ON Voltage
UDN·7180A
Output OFF Voltage
Symbol
VON
VON
Vo"
Output Cu rrent
(ILlMITING)
Output Cu rrent
(ISENSE)
Input High ~urrent
ION
Input Low Current
hL
Supply Current
IKK
ION
hH
Test Conditions
All inputs at 4.5 V
All inputs at 4.5 V. VKK = -70 V
Allmputs at 4.5 V,
ION = 14 rnA
All inputs at 0.5 V,
Reference VKK
All inputs at 15 V, VKK = -llO V,
Test output held at -60 V
All inputs at 0.5 V. VKK - -llO V,
Test output held at -66 V
Test input at 15 V,
Other inputs at 0 V
Test input at 0.5 V, One input
at 4.5 V. Other inputs at 0.5 V
All inputs at 0 V
UDN·7180/83A
Min. Typ. Max.
UDN-7184A
Min. Typ. Max.
UDN·7186A
Min. Typ. Max. Units
-100 -104 -66 105 -lU~
-
-98 -102 -65 -
-
Test
Fig.
1
1
-
3A
84 76
UDN·7183A only
1475 1850 2450
38
-95 -120 -155
4
-
200
5
-
1
125
2
6
76
84
-97
-
910 ll40 1520
76
84
440
550
-
V
V
V
V
725 !loA
-65 -85 -115 -50 -65 -90 !loA
-
200
275
-
200
275 !loA
10
-
-
1
125
10
175
-
1
175
10 !loA
175 !loA
275
NOTES:
1. All voltage measurements are referenced to pin 9 unless otherwise specified.
2. All voltage measurements made with 10M 11, DVM or VTVM.
3. Recommended VKK operating range: -85 to -lJO V.
Due to the high input impedance of these devices, they are susceptable to static discharge damage sometimes associated with handling
and testing. Therefore, techniques similar to those used for handling
MOS devices should be employed. (See Page 5-2).
3-18
-100 -63 -
125
SERIES DDN·71aOA «(ont'd)
PARTIAL SCHEMATIC
12
II
(kQ)
711.
7113
7114
(kQ)
350
350
7186
jt;;u~
25
40
480
620
I
- - - -O~T~T i
1
I
I
18
I
I
I
I
10
I
I
"
R2
700K
27 K
,
t---
I
PM
i;'NS8".
'2\
,
,
,- . -' I
Ie,
I
Dca D4
D5
-I· I
[;IM
HOURS
SET
.....L
r
II
60H,
3N:r-- Val
Db
-
V"~
0
:E
:::J
~
Z
]
T
1
1-
SE
0
S
--
0
::>
F
DI5PlA
COUNT
....J.!.NH1[l.IT ..J-
AII£RI CAN
MAGNETI CS
AM6612
ET
ao
"-
:E
'--
I- I~I I:J
-
~
'"
0,
""'NfES
-'-1
~
'"en
l=!
I
Dj
TEN
F
~~
4
~
D",
D, 3
D2
L
BURROUGHS
CDo0733CM
MED~
~ BR!G~T
D3
SA
KK
-
-=-
~~'NS859
T
'loev
-=-
l!
T
Jj-
T
-IOOV
~
D"b,'No.0_9;'<;1
TYPICAL SIX-DIGIT CLOCK USING TYPE
3-19
UDN-7183A
II
SERIES :UDN~71aOA (e_d)
-70V
-llOV
D'f/G.IIO ...-9739A
FIGURE 1
FIGURE 2
FIGURE 3A
-70V
D'II!O.1I0. A--97'1.Jl
-llOV
~.'NO.A-97I1()A
FIGURE 38
FIGURE 4
-llOV
FIGURE 5
- JlOV
FIGURE 6
3-20
Q
DA~LlNGTON
HIGH·CURRENT
AND TRANSISTOR ARRAYS
TO
1.5
A
~----,----
Device Type
Data
TPP·I000 and 2000
ULN·2001 thru 2025A
ULN·2001 thru 2015R
ULS·20Q 1 thru 2025H
ULS-2001 thru 2015R
4-81
4·2
4·2
4·11
4-11
ULN·2031 thru 2033A
ULN·2031 thru 2033R
ULS-2045H
ULS-2045R
ULN·2046A
4·22
4·22
4·24
4·24
4·24
ULN·2046A·l
ULN·2047A
ULN·2054A
ULN·2061 and 2062M
ULN·2064 thru 20778
4·26
4·27
4·28
4·31
4·31
ULN·2081 and 2082A
ULN·2083A
ULN·2083A·l
4·42
4-43
4-45
Applications
7·2, 6, 35, 42
7·6
Thermal
.18
38
48
38
IE
38
48
38
IE
7·24
7·5,32
7·S, 37
Device Type
Ul(}2001 thrti 2005A/H/R .
Ul( l'2011 thru 2015A/H/R
Ul( l'2021thru 2Q25A/H
Ul( l'2031 thru 2054A/H/R
ULN·2061M
ULN·2062M
ULN·2064/68/108
ULN·20611691718
ULN·2014B
ULN·20778
ULN·2081A·
ULN·2082A
UL( l'208~ thru 2086A/H
UDN·2580A/R
Ul( l'2801 thru 28Q5A/H/R
Ul( l'281rthru 2815A/H/R
Ul( l'2821 thru 2825A/H
UDN·2841 and 28428
UDN·2843 and 284.48
UDN·Z845 and 2.84613.
UDN·2956 and 2957A1R
UDN·2981 and 2982A
UDN·2983 and 2984A
TPPTPQ-
IE
IE
IE
Ie
2
IE
IE
IE
Device Type
Data
ULS-2083H
ULN·2086A
TPQ-2221 thru 2484
UDN·2580A
UON·2580R
4-43
4-45
4·83
48
4-4~
lA
3A
ULN·2801 thru 2825A ..
ULN·2801 thm 28fSR
ULS-2801 thru 28l5R
UDN·2841 thru 28468
TPQ·2906 and 2907
4·50
4·50
4-60
TPQ·3724 thru 3906
4;n
4·77
4-79
4-79
4·81
TPQ·6001 thru 6700
4·8~
80V
1·36
7·36
4·77
4·83
4-81
1.75 A
1.75 A
1.75 A
1.75 A
1.75 A
USA
200 rnA
200 rnA
lA
3A
3A
2
4-83
TP~·4000
VOUT
50 V
50 V
95 V
Transistor Arrays
SOV
80 V
50 V
80 V
50 V
7-6. 39
Outputs .
Sink 7
Sink 7
Sink 7
Source/Sink
Source/Sink
Sink
Sink
Source/Sink
Source/Sink
SInk
Source
2
2
4
4
4
4
7
7
16 V
16 V
Transistor Arrays
-'500 mA
-50 V
Source 8
500mA
50 V
Sink 8
600 mA
50 V
~ink 8
500 mA
95 V
Sink 8
-USA
-50 V
Sink 4
-USA
-50 V
Source 4
±1.75 A
-50 V
Source/Sink 4
-500 mA
-80 V
Source 5
500 mA
50 V
Source 8
500 mA
80 V
Source 8
Darlington Transistor Arrays
Transistor Arrays
4-1
Thermal
IE
4-46
UDN·2956 and 2957A
UQN'2956 and 29~7R
UON·2981 thru 2984A
UDN·2981 thru 2984R
TPP·3000
lOUT
500 mA
600 mA
500 mA
Applications
18
38
lA
3A
SERIES ULN-2000A
SERIES ULN-2000A
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
THESE high-voltage, high-curr~nt Darlington arrays are compnsed of seven sIlIcon NPN Darhngton pairs on a common monolithic substrate. All
units feature open collector outputs and integral
diodes for inductive load transient suppression. Peak
inrush currents to 600 mA (Series ULN-2000A and
ULN-2020A) or 750 mA (Series ULN-20I0A) are
permissable, making them ideal for driving tungsten
filament lamp loads.
The Series ULN-2001A devices are general purpose
arrays which may be used with standard bipolar digital
logic using external current limiting, or with most
PMOS or CMOS directly. All are pinned with outputs opposite inputs to facilitate ease of circuit board
layout and are priced to compete directly with discrete
transistor alternatives.
The Series ULN-2002A was specifically designed for
use with 14 to 25 V PMOS devices. Each input has a
Zener diode and resistor in series to limit the input
current to a safe value in that application. The Zener
diode also means excellent noise immunity for these
devices.
The Series ULN-2003A has a 2.7 k fl series base resistor to each Darlington pair, and thus allows operation directly with TTL or CMOS operating at a supply voltage of 5 V. These devices will handle numerous interface needs - particularly those beyond the
capabilities of standard logic buffers.
The Series ULN-2004A features a 10.5 k \l series
input resistor to permit their operation directly from
CMOS or PMOS outputs utilizing supply voltages of
6 to 15 V. The required input current is below that of
the Series ULN-2003A while the required input volt:
age is less than that required by the Series ULN-2002A.
The Series ULN-2005A is especially designed for
use with standard and Schottky TTL where higher
output currents are required and loading of the logic
output is not a concern. These devices will sink a
minimum of 350 mA when driven from a "totem
DI'G. NO.
pole" logic output. Typical voltage and current
levels for both the Series ULN-2003A and ULN2005A are shown in the graphs.
The Series ULN-2000A is the original high-voltage,
high-current Darlington array. The output transistors
are capable of sinking 500 mA and will sustain at
least 50 V in the OFF state. Outputs may be paral-
Device Type Number Designation
VCE{MAXI
ICiMAXI
50 V
500 mA
50 V
600 mA
Type Number
95 V
500 mA
ULN·200IA
ULN-2011A
ULN-2021A
ULN-2002A
ULN-2Ql2A
ULN-2022A
ULN-2003A
ULN-2013A
ULN-2023A
ULN-2004A
ULN-2014A
ULN-2024A
ULN-200SA
ULN-201SA
ULN-2025A
=
=
General Purpose
PMOS, CMOS
14 - 25 V
PMOS
SV
TTL, CMOS
6 - 15 V
CMOS, PMOS
High Output
TTL
Series ULN-2000A and ULN-2010A devices are also available (with
reduced package power capability) in industrial-grade hermetic
packages. To order, change the last letter of the part number from 'A'
to'R'. Note that the high-voltage devices (BVce:2::95 V) are not presently available with this packaging option.
4-2
SERIES UlN-2000A ·.(Cont' dt
leled for higher load current capability. The Series
ULN-20lOA devices are similar except that they will
sink 600 rnA. The Series ULN-2020A willStistaln
95 V in the OFF state. A table showing the specific
type numbers available for the various applications is
given on page 4-2.
'.' .
All Series ULN-2000A Darlington arrays are furqished in a 16-pin dual in-line pla~iic package.
.These devices can also be supplied in a hermetic dual
in-line package for use in militarY and aerospace applications (with a slightly red\lced power handling
capacity).
'.' .
"
AflSOlUTE MAXIMUM RATINGS ~t 25°Cliree-Air Temperature
for anyone Darlington pair (unless 'otherwise noted)
Output Vpltage, VCE (Series. ULN-2000, 201OA) .................................................................... 50 V
(Series ULN-2020A)" .... ; ....... :....... " .. " ..... : .......................................... 95 V
Input Voltage, VIN (Series ULN~2002, 2003, 200M) ................... : ............................................ 30 V
(Series ULN-2005A) .......•.. " ..... r . . . . . . . . . . . . . . •. , . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,15 V
Continuous. Collector Current, Ic (Series ULN-2000, 2020A) ....................................................... 500 mA
(Series ULN-2010A) .............................................................000 mA
Continuous Base Current, 18 . . . . . . . . . :: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Power Dissipation; PD (one Darlington pair) .......................................... '" ......................... : 1.0 W
(total package) .......................................................................... 2.0 W*
Operating Ambient Temperature Range, TA . . . . . . . ; • : . . . . . . . . . . ; .... '" . . . . . . ; ..... : . . . . . . . . . . . . . . . . . . . . . . ooe to +70 oe
Storage Temperature Range, Ts ..................................................................... -55°C to +15O°C
"Derate at the rateo! 16.67 mW;oC a6ov~ i5·C.
Under normal operating conditions, these devices will sustain 350 rnA perllutPutwith VCE(SAT} = L6V at 70·Cwith a pulse width of 20 ms and a duty cycle
of 34%. other allowable. combinations of output current, number of outpu~ conducting, and duty cycle are shown on page 4-8:
PARTIAL SCHEMATICS
...-1.....--0 COM
7V'
10. 51<
,
i
:
,
I
___ I
OWli. No. 1.-9650
Series ULN-2001 A
(eechdriver)
Series ULN-2002A
. (each driver)
Series ULN-2003A ;
(eech driver)
I
,--*--0 COM
1.05K
,
,
,
.
i,
I
I
,,
,
o
~-
DWG.1I0. A-989U
Series ULN-2004A
(each driver)
-- - ----------- -~----
,
I
___ I
I'G.ttO. A-10.228
Series ULN·2005A
(each driver)
SERIES ULN·2000A
(Cont'd)
SERIES ULN-2000A
ELECTRICAL CHARACTERISTICS AT 25°C (unless otherwise noted)
Characteristic
Output leakage Current
Symbol
leEx
Test
Fig.
Applicable
Devices
1A
All
18
COllector-Emitter
Saturation Voltage
Input Current
Input Voltage
VeE(SAT)
UlN-2002A
UlN-2004A
2
All
I'N(ON)
I'N(OFF)
V'NiON)
3
4
5
UlN-2002A
UlN-2003A
ULN-2004A
ULN-2005A
All
ULN-2002A
ULN-2003A
UlN-2004A
D-C Forward CUrrent
Transfer Ratio
I nput Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode
leakage Current
Clamp Diode
Forward Voltage
hFE
2
C'N
tpLH
tpHL
IR
-
VF
-
6
7
UlN-2005A
ULN-2001A
All
All
All
All
All
Test Conditions
VeE = 50 V, TA = 25°C
VeE = 50 V, TA = 70°C
VeE = 50 V, TA = 10uC, Y'N = C.UV
VeE = 50V, TA = 70°C, Y'N = 1.0 V
Ie = 100 mA, 18 = 25O!J.A
Ie = 200 mA, 18 = 35O!J.A
Ie = 350 mA, 18 = 500!J.A
V,N =17V
Y'N = 3.85 V
Y'N = 5.0V
Y'N = 12 V
Y'N = 3.0 V
Ie = 500!J.A, TA = 70°C
VeE = 2.0 V, Ie = 300 mA
VeE = 2.0 V, Ie = 200 mA
VeE = 2.0 V, Ie = 250 mA
VeE = 2.0 V, Ie = 300 mA
VeE = 2.0 V, Ie = 125 mA
VeE = 2.0 V, Ie = 200 mA
VeE = 2.0 V, Ie = 275 mA
VeE = 2.0 V, Ie = 350 mA
VeE = 2.0 V, Ie = 350 mA
VeE = 2.0 V, Ie = 350 mA
0.5 Ein to 0.5 Eout
0.5 Ein to 0.5 Eout
VR= 50V, TA = 25°C
VR= 50 V, TA = 70°C
IF = 350 mA
4-4
Limits
Min. Typ. Max.
-
-
-
50
100
500
500
0.9 1.1
1.1 1.3
1.3
1.6
0.82 1.25
0.93 1.35
0.35 0.5
1.0 1.45
1.5 2.4
65
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.4
-
1000
-
-
-
15
0.25
0.25
25
1.0
1.0
50
100
2.0
-
-
-
-
50
-
-
-
-
-
-
-
1.7
Units
!J.A
!J. A
!J. A
!J. A
V
V
V
mA
mA
mA
mA
mA
!J. A
V
V
V
V
V
V
V
V
V
pF
!J.S
!J. s
!J.A
!J. A
V
SERIES ULN.2000A(CC)nt' d)
SERIES ULN-20 1OA
ELECTRICAL CHARACTERISTICS AT 25°C (unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
ICEX
Test
Fig.
Applicable
Devices
IA
All
IB
Collector-Emitter
Saturation Voltage
Input Cu'rrent
Input Voltage
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode
Leakage Current
Clamp Diode
FGrward Voltage
VCE(SAT)
IIN(ON)
[IN(OFF)
VIN(ON)
2
3
4
5
hFE
2
CIN
tpLH
tpHL
-
-
IR
6
VF
7
Test Conditions
VCE = 50 V, TA = 25°C
VCE = SO V, TA = 70°C
ULN-2012A VCE = 50 V, TA = 70~C, VIN = 6.0V
ULN-2014A VCE = 50 V, TA = 70 9C, VIN = 1.0 V .
Ic = 200 mA, 18 - 350 p.A
All
Ic = 350 mA, 18 = 500 p.A
Ic = 500 mA, 18 = 600 p.A
ULN-2012A "lIN = 17V
ULN-201,3A VIN =3:85V
ULN-2014A VIN = 5.0V
VIN ",,'12 V
UlN·20ISA V,N = 3.0V
All
Ic = 500p.A, TA= 70°C
ULN-2012A VCE = 2.0 V, Ic = 50QmA
ULN-2013A VCE = 2,OV, Ic = 250mA
VCE = 2.0V, Ic"" 300 mA
VcE"",2.0 V, Ic ~ 500 mA
ULN-2014A" VCE = 2.0 V, Ic = 275 mA
VCE = 2.0 V, Ic = 350 mA
VCE =2,0 V, Ic = 500 mA
ULN-2015A VCE = 2,0 V, Ie = 500mA
ULN-2011A VCE = 2.0 V, ,Ie= 350 mA
VeE = 2.0V, Ie = 500 mA
All
All
0.5 E;, to 0.5 Eo.,
All
0.5 E;.to 0.5 Eo.,
All
VR = 50V, TA = 25°C
VR = 50V, TA = 70°C
All
IF = 350mA
IF = SOOmA
4-5
Limits
Min. Typ. Max. Units
-
-
-
50
-
-
-
-
p.A
50
p.A
100
500 , p.A
500
liA
V
1.1 1.3
1.3 1.6
V
1.7 1.9
V
0.82 1.25 mA
0.93 1.35 mA
0.35 0.5
mA
1.0 1:45 mA
1.5 2.4
mA
jJ.A
65
,17
V
2.7
V
V
3.0
3.S
V
V
7.0
V
8.0
9,S
V
2.6
V
-
-
,1000 900 15
25
0.25 1.0
0.25 ,1.0
50
100
1.7 2.0
2.1 2.5
,'.
pF ."
p.S
p.S
Jl.A
p.A
V
V
,
IJ
SERIES ULN·2000A
(Cont'd)
SERIES ULN-2020A
ELECTRICAL CHARACTERISTICS AT 25°C (unless otherwise noted)
Characteristic
Output Lea kage Cu rrent
Symbol
IcEx
Collector-Emitter
Saturation Voltage
VCE(SAT)
I nput Cu rrent
IIN(ON)
Input Voltage
IIN(OFF)
VIN(ON)
Test
Fig.
Applicable
Devices
1A
All
1B
ULN-2022A
ULN-2024A
2
All
3
4
5
ULN-2022A
ULN-2023A
ULN-2024A
ULN-2025A
All
ULN-2022A
ULN-2023A
UL.N-2024A
"
D-C forward Current
Transfer r~tio
Input Capacitance
TurQ-On D,elay
Turn,Off Delay
Clamp Diode
Lea kage Cu rrent
Clamp Diode
Forward Voltage
ULN-2025A
ULN-2021A
hFE
2
CIN
tPlH
tpHl
IR
-
6
All
All
All
All
VF
7
All
-
Test Conditions
VCE = 95 V, TA = 25°C
VCE = 95 V, TA = 70°C
VCE = 95 V, TA = 70°C, VIN = 6.0 V
VCE = 95V, TA = 70°C, VIN = l.OV
Ic= 100 mA, 18 = 250/lA
Ic = 200 mA, 18 = 350/lA
Ic = 350 mA, 18 = 500/lA
VIN = 17 V
VIN = 3.85 V
VIN = 5.0 V
VIN = 12 V
VIN = 3.0 V
Ic = 500 /lA, TA = 7Q°C
VCE = 2.0 V, Ic = 300 mA
VCE = 2.0 V, Ic = 200 mA
VCE = 2.0 V, Ic = 250 mA
VCE = 2.0 V, Ic = 300 mA
VCE = 2.0 V, Ic = 125 mA
VCE = 2.0 V, Ic = 200 mA
VCE = 2.0V, Ic = 275 mA
VCE = 2.0 V, Ic = 350 mA
VCE = 2.0V, Ic = 350 mA
VCE = 2.0 V, Ic = 350 mA
0.5 Eto to 0.5 Eo",
0.5 Eto to 0.5 Eo",
VR= 95V, TA = 25°C
VR= 95V, TA = 70°C
IF = 350 rnA
4-6
Limits
Min. Typ. Max. Units
-
-
-
-
-
-
0.9
-
1.1
1.3
-
-
-
50
-
0.82
0.93
0.35
1.0
1.5
65
-
50
100
500
500
1.1
1.3
1.6
1.25
1.35
0.5
1.45
2.4
-
-
-
-
-
-
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.4
1000
-
-
-
15
0.25
0.25
25
1.0
1.0
50
100
2.0
-
-
-
-
-
-
-
1.7
/lA
/lA
/lA
/lA
V
V
V
mA
mA
mA
mA
mA
/lA
V
V
V
V
V
V
V
V
V
pF
/lS
/lS
/lA
/lA
V
SERI.ES ULN.2000A
(Cont'd)
TEST FIGURES
OPEN
VeE
OPEN
VeE
I
FlGURE1A
FIGURE 18
OPEN
OPEN
/ 0 - - - - 0 OPEN
iFIGURE 2
FIGURE '3
II
: OPEN
OPEN
VeE
IMI.110. A-9734A
FIGURE 4
FIGURE 5
OPEN
DWO.IIO. A-9735A
FIGURE 6
FIGURE 7
..
., "'
'
SERIES ULN·2000A
(Cont'd)
600
1/
I'
"
'"
E
~ 400
600
~
I
V
~
,
o
,2,'~I
«
E 400
~
;~~"ov
Ie' ,0
::J
U
"
~~
o
V
o
.'
_
o
0,5
I
,~
V
,-"''$
')+'
"'1
'/
1,0
I
g 200
~
o
~'<'
1
20
J
/
/
i /
/I~ Vt:
V
V
V
/
V
MAXIMUM REQUIRED
INPUT CURRENT
200
400
INPUT CURRENT IN tJA - I'N
SATURATION VOLTAGE - VeE (SAn
DWG. NO.
~
/
~g;
::J
~ 200
I
;;-,
.Y
I '~0'o,-'<'
I
A-975~8
~O.
\lI'I1l.
600
1.·10.8721.
COLLECTOR CURRENT
AS A FUNCTION OF INPUT CURRENT
COLLECTOR CURRENT
AS A FUNCTION OF SATURATION VOLTAGE
~
2.0
\DEVICELIMIT
3<
~
Z
°;[
;::
~o
1,5
~
iil
<;.
0
~
""'"
1.0
u
;[
:i
'"
~
;!.
PER CENT DUTY CYCLE
0,5
"-
~
~:
1'~
"
~
~
~ (~
"0
\'b~~
e-.
"'.f
-:-1t.
'" ....
..~
.,,~
~ ~
1<$0
50
100
AMBIENT TEMPERATURE IN
OWG.II0.A-9752A
~r"!\
°c
150
0".110. A-9753A
PEAK COLLECTOR CURRENT
AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS
ALLOWABLE AVERAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
4-8
.SERIES ULN·2000A (Cont'.d)
INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE
2.0
,
J
"•
"Z•
~
~
,~
::>
u
~
, .5
'.0
::!
::>
O;5F-,::ioo'-'=:'--+--+--If--+--+--l
v
~
~
~
12
_ 14
'6
22
'8
INPUT VOLT~GE - V1N
24
26
0.5
~~
10--
,-
~
1__ -
..--
~
~~
-""
~~':'i---
"
'0
INPUT VOLTAGE - V IN
o:IW;,. PlO.
"
12
~~99A
DIoI,j, ~O. A-'H'>7A
SERIES ULN·2004A
SERIES ULN·2002A
II
2.5
2.0
Z
"
1.5
§
'.0
E
~
::
u
2
0 .. 5
~
INp{)T VOLTAGE - YIN
INPUT V~UAGE - VIN
.)\II....
·SERIES:UI:N~2003.A
Ito. ,"'"
SERIES ULN.200SA
4-9
IO.1'j~
SERIES ULN·2000A
(Cont'd)
TYPICAL APPLICATIONS
ULN·2003/05A
ULN·2002A
If---UJPMOS
OUTPUT
DWG. No.
A~9652.
TIL
OUTPUT
PMOS TO LOAD
TTL TO LOAD
ULN·2003A
ULN·2004A
+Vce
+V
Rp
~
D'IIG. NO.
0I0IG.MO. A-IO,175
4-965~A
TIL
CMOS ~
OUTPUT
OUTPUT
USE OF PULL-UP RESISTORS
TO INCREASE DRIVE CURRENT
BUFFER FOR HIGHER CURRENT LOADS
4-10
SERIES ULS-200OH .and ULS-200OR
.
,"
J
-
'"_
,
SERIES ULS~2000H and ULS.2000R
HIGH.VOL TAGE, HIGH·CURRENT
DARLINGTON TRANSISTOR ARRAYS
FEATURES
•
•
•
•
•
•
•
TTL, DTL, PMOS, or CMOS Compatible Inputs
Peak Output Current to 600 rnA
Transient Protected Outputs
Side-Brazed Hermetic Package, or
Cer-DIP Package
High-Reliability Screening Available
Wide Operating Temperature Ranges
of seven silicon NPN Darlington
COMPRISED
power drivers on a common monolithic sub-
All Series ULS-20ooH arrays are furnished in a
16-pin side-brazed dual in-line hennetic package
which confonns to the dimensional requirements of
Military Specification MIL-M-3851O and meets the
processing and environmental requirements of Military Stan~ard MIL-STD-883, Methods 5004 and
5005. Series ULS-2000H arrays with high"
reliability screening are described on page 4-21.
strate, the Series ULS-20ooH and ULS-2oo0R arrays are ideally suited for driving relays, solenoids,
lamps, and other devices with up to 3,0 A output
current per package. The side-brazed,
hennetically-sealed Series ULS-2000H devices are
rated fo( operation over the temperature range .of
- 55°C to + 125°C, recommending them for military
and aerospace applications. The Cer-DIP, industrial
grade hennetic Series ULS-2000R devices are rated
for use over the operating temperature range of
-40°C to +85°C, allowing their use in commercial
and industrial applications where severe environments may be encountered.
The twenty-five cintegrated circuits listed in this
engineering bulletin pennit the. circuit designer to
select the optimu,m device for his application. There
are 2 packages; 5 input characteristics, 2 output
voltages, and 2 output currents covered by the listings. The appropriate part for use in specific applications can be determined from the Device Type
Number Designation chart. Note that the highvoltage devices (BVenG 95 V) are available in the
Series ULS-2000H only. All units feature open collector outputs and integral diodes for inductive load
transient suppression.
Device Type Number Designation
VCE1MAX) ICIMAXI =
General P.urpose
PMOS, CMOS
14 - 2S V
PMOS
SV .
TTL, CMOS
6 - IS V
CMOS, PMOS
High Output
TTL
so V
SOO rnA
so V
600 rnA
Type Number
9S V
SOOmA
ULS-2001 *
ULS-20U*
ULS-2021H
ULS-2002*
ULS-2012*
ULS-2022H
ULS-2003*
ULS-2013*
ULS-2023H
ULS-2004*
ULS-2014*
ULS-2024H
ULS-200S*
ULS-201S*
ULS-202SH
·Complete part number includes a final leiter to indicate package. H = hermetic
dual in-line, R = ceramic dual in-line.
4--U
II
~
SERIES ULS-2000H and ULS-2000R (Cont'd)
ABSOLUTE MAXIMUM RATINGS
Output Voltage, VCE (Series ULS-2000, 10*) ....................•......... 50 V
. (Series ULS-2020H) ................................ 95 V
Input Voltage, VIN (Series ULS-2002, 03, 04*) ............................ 30 V
(Series ULS-2005*) ................................. 15 V
Peak Outputcurrent, lour (Series ULS-2000*, 20H) ...................... 500 rnA
(Series ULS-2010*) .......................... 600 rnA
Ground Terminal Current, IGND ....................................... 3.0 A
Continuous Input Current, liN' ...................................... 25 rnA
Power Dissipation, Po (one Darlington pair) •............................ 1.0 W
(total package) ..................... See Graph, p, 4-18
Operating Temperature Range, TA ('H' package) ................ -55°C to + 125°C
('R' package) . . . . . . . . . . . . . . . .. -40°C to +85°C
Storage Temperature Range, Ts ........................... -65°C to + 150°C
PARTIAL SCHEMATICS
r-IM-- COM
,
,
i:,
,
I
___ I
....-*..... COM
..--*-<)COM
7V
lo.SK
,
,,,
,
,
Z.lK
I
,
t,
,
I
t,,
,
t---- . . ---- ... ------t4----
I
___ I
---~
~.,1I0"-!l6'jO
OWV. friO. _-ISIS
Series ULS-2002*,
(each driver)
Series ULS·2001*
(each driver)
Series ULS·2003*
(each driver)
..--*-<)COM
....--I..r--oCOM
IO.SK
I.OSK
,
t,
,
,
"
I
___ II
___ I
Series ULS·2004*
(each driver)
Series ULS-200S*
(each driver)
·Complete part numiler includes a final leiter to indicate package, H = hermetic dual in-line, R = ceramic dual in-line.
4-12
SERIES ULS-2000H and ULS-2000R(Cont'd)
SERIESULS·2000H and ULS·2000R
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
ICE)(
Applicable
Devices
All
VCElSAT)
ULS-2004*
All
Test Conditions
Temp.
ULS~2002*
Collector-Emitter
Saturation, Voltage
Min.
+25°C
Max.
Input Current
Input Voltage
IINION)
IINIOFf)
VINION)
ULS-2002*
ULS-2003*
ULS-2004*
ULS-2005*
All
ULS-2002*
UL~-z003*
Max.
Min.
Max.
Mm.
Max.
ULS-2004*
Min.
Max.
ULS-2005*
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn-Off Delay
. Clarnp Diode Leakage
Current
ClarnpDiode Forward
Voltage
hfE
ULS-2001 *
CIN
tPHl
IR
All
All
All
All
Vf
All
,
t,,"
Min.
Max.
Min.
+WC
+25°C+z5°C
+25°C
Fig. Min.
lA -
.
VCE - 50V
VCE ..:. 50 V, VIN - 6V
VCE = 50 V, VIN = IV
Ic - 350 rnA, Is - 850 j.J..A
Ic = 200 rnA, Is = 550 !LA
Ic ,= 100 rnA, Is = 350 !LA
Ic - 350 rnA, Is -5OO!LA
Ic = 200 rnA, Is - 350 !LA
Ic - 100 rnA, Is -250!LA
Ic - 350 rnA, Is - 500 !LA
Ic - 200 rnA, Is - 350 !LA
Ic- 100 rnA, Is - 250 !LA
VIN - 17 V
VIN = 3.85 V
VIN = 5 V
VIN - 12 V
VIN -,3 V
Ic -500!LA
VCE - 2 V, Ie -300 rnA
VCE = 2 V, Ic = 300 rnA
VCE - Z V, Ic -ZUU rnA
VCE - 2 V, Ic - 250 rnA
VCE = 2 V, Ic - 300 rnA
VCE = 2 V, Ic = 200 rnA
VCE = 2V, Ic = 250 rnA
VCE _tv, Ie - 300 rnA
VCE - 2 V, Ie - 125 rnA
VCE = 2V, I - 200 rnA
VCE = 2V, Ic = 275 rnA
V£E = 2 V, Ic = 350 rnA
VCE = 2 V, Ic = 125 rnA
VCE -:- 2 V, Ic - 200 rnA
VCE - 2 V, Ic - 275 rnA
VCE = 2 V, Ic = 350 rnA
VCE = 2 V, Ic = 350 rnA
VCE - 2V, Ic - 350 rnA
VCE - 2 V, Ic - 350 rnA
VCE = 2 V,, Ie":' 350 rnA
0.0 Ento OSE,,,,
0.5 Ein to 0.5 Eout
VR - 50 V
If - 350 rnA
IB
IB
-
2
2
2
L
-
2
2
2
z
2
-
3
3
3
3
3
4
5
5
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
-
-
1.1
l.6
1.1
1.3
1.1
u.~
1.6
1.3
1.8
1.0
1.1
1.3
850
BUO
1350
500
1450
2400
930
350
1000
15UO
50
-
-
18
13
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
-
6.0
-
-
-
-
-
-
-
-
-
500
1000
-
-
-
-
15
250
250
6
-
-
7
-
1.7
Units
!LA
!LA
!LA
,V
V
V
V
V
V
V
V
V
!LA
!LA
!LA
!LA
!LA
!LA
V
V
J.J
3.6
3.9
2.4
2.7
3.0
-
-
-
-
1.3
l.L~
8.0
10
12
5.0
6.0
7.0
8.0
3.0
2.4
-
'Complete part number includes a final letter to indicate package. H = hermetic dual in,line, R = ceramic dual in-line.
Notel: All limits stated apply to the complete Darlington series except as specified for a single device type.
Note 2: The IINIOff) current limit guarantees against partial turn-on of the outpul.
Note 3: The VINION) voltage limit guarantees a minimum output sinke"rrent per the specified test.eonditions.
4-13
575
675
250
75u
115U
25
Limits
Typ.
Max.
100
500
500
1.6
1.8
1.3
1.5
-
-
25
1000
1000
50
pF
os
ns
!LA
2.0
V
II
SERIES ULS-2000H and ULS-2000R (Cont'd)
SERIES ULS .. 201 OH and ULS.. 2010R
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
IcEX
Collector-Emitter
Saturation Voltage
VCEISAD
!
Applicable
Devices
All
ULS-2012*
ULS-2014 *
All
Test Conditions
Temp.
Min.
+2SoC
Max.
Input Current
IIN{ON)
Input Voltage
IIN{OfF)
VIN{ON)
ULS-2012*
ULS-2013*
ULS-2014 *
ULS-201S*
All
ULS-2U1Z*
ULS-2013*
Max.
Min.
Max.
Min.
Max.
ULS-2014 *
Min.
Max.
ULS-201S*
Min.
Max.
D-C FOlWard Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode Leakage
Current
Clamp Diode FOlWard
Voltage
hFE
ULS-2011*
CIN
tptH
tPHl
IR
All
All
All
All
VF
All
Min.
+25°C
+2SoC
+2SoC
+25°C
Fig. Min.
1A VCE = SO V
1B VCE - SUV, VIN - 6v
VCE - SO V,V IN - 1 V
1B Ic - SOO rnA, Is - 1100/-LA 2
Ic = 3S0 rnA, Is = 8S0/-LA 2
Ic = 200 rnA, Is = S50/-LA 2
Ic = SOO rnA, Is = 600/-LA 2
Ic = 3S0 rnA, Is = 500/-LA 2
Ic - 200 rnA, IB - 3S0/-LA 2
Ic - 500 rnA, IB - 600/-LA 2
Ic = 3S0 mA, IB = 500/-LA 2
Ic = 200 mA, IB = 3S0/-LA 2
VIN -17V
S7S
3
3
67S
VIN - 185 V
2S0
3
VIN = S V
VIN = 12 V
3
7S0
3 1150
VIN - 3 V
4
25
Ic = 500/-LA
5
VCE - 2 V, Ic - 500 rnA
VCE = 2 V, Ie = 500 mA
5
VCE = 2 V, Ic = 250 rnA
5
VCE = 2V, Ic = 300 mA
5
VCE = 2 V, Ic = 500 rnA
5
5
VeE - 2 V, Ic - 250 mA
VCE = 2V, Ic = 300mA
5
S
VCE = 2 V, Ic = SOO rnA
S
Vr.E = 2 V, Ic = 27S mA
5
VCE = 2 V, Ic = 350 rnA
VCE = 2 V, Ic - SOO mA
5
5
VCE - 2 V, Ic - 275 mA
VeE = 2 V, Ic= 350 rnA
5
S
VCE = 2 V, Ie = SOO rnA
S
VeE = 2 V, Ic = 3S0 mA
VCE - 2 V, Ic - SOO mA
S
VCE = 2 V, Ic = 3S0 mA
S
VCE = 2V, Ie = sao mA
S
2
4S0
VCE = 2 V, Ic= SOOmA
VCE - 2 V, Ic - SOOmA
2
900
0.5 Ein to 0.5 J oe1
O.S Ein to O.S Eout
VR= SO V
Limits
Max.
. Typ.
100
SOO
SOO
1.8
2.1
1.8
1.6
1.5
1.3
1.7
1.9
1.6
1.25
1.1
1.3
2.1
1.8
1.6
1.8
1.S
1.3
850
1300
930
13S0
3S0
SOO
1000
14S0
lS00
2400
SO
23.5
-
-
-
6
-
-
7
7
-
1.7
-
-
IS
2S0
2S0
Units
/-LA
/-LA
/-LA
V
V
V
V
V
V
V
V
V
/-LA
f.LA
/-LA
/-LA
/-LA
/-LA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
17
3.6
3.9
6.0
2.7
3.0
3.5
10
12
17
7.0
8.0
9.S
3.0
3.S
2.4
2.6
-
-
-
-
25
1000
1000
50
pF
ns
ns
/-LA
.
IF = 3S0 mA
If = SOO rnA
'Complete part number includes a finalletler to indicate package. H = hermetic dual in-line, R = ceramic dual in-line.
Note 1: All limits stated apply to the complete Darlington series except as specified for a single device type.
Note 2: The IIN{Om current limit guarantees against partial turn-on of the output.
Note 3, The VIN{ON) voltage limit guarantees a minimum output sink current per the speCified test conditions.
4-14
2.0
2.S
V
V
SERIES ULS-2000H and ULS-.2000R (Colt'd)::
SERIES ULS·2020H
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
o.utput Leakage, Current
Collector-E mitter
Saturation Voltage
Symbol
leEX
Vcr(SAl)
Applicable
Devices
All
ULS-2022H
ULS-2024H
All
Test Conditions
Temp.
Min.
+25~C
Max.
Input Current
IIN(oN)
Input Voltage
IIN(Om
VIN(ON)
ULS-2022H
ULS-2023H
ULS-2024H
ULS-2025H
"AII
UlS-2022H
Max.
Min.
Max.
Min.
UlS-2023H
Max.
ULS-2024H
Min.
.
ULS-2025H
";<
D-C forward Current
Transfer Ratio
Input Capacitance
Turn-Un Delay
Turn-o.ff Delay
Clamp Diode Leakage ,
Currenf
Clamp Diode Forwa.id
Voltage.
hFE
I1Ui-ZUliH
CIN
tPlJl
IR
All
All
All
All
VF
All
tPHl
..
.
",
Max.
VeE = 95 V
Vcr - 95 V, 'lIN - Ii V
Vcr - 95 V, VIN - 1V
Ie - 350 rnA, 18 - 850 p.A
Ie -200 rnA, 18 - 550 p.A
Ie - 100 rnA, 18 - 350. p.A
Ie - 350 mA;.I 8 - SOU p.A
Ie - 200 rnA, 18 - 350 p.A
Ie - 100 rnA, 18 - 250 p.A
Ie - ;:IOU rnA, 18 - OUU p.A
Ie = 200 mA,1 = 350p.A
Ie = 100 rnA, I == 250~A
'lIN = 17 V
VIII - 3.85'1
VIN = 5'1
V1N - 12 V
VIII = 3V
Ie = 500p.A
Vcr -2V~le' == 300 rnA
VeE - 2 V, le- 300 rnA
VeE - 2'1, Ie - 200 rnA
'ICE ~. 2 V, Ie '"" 250 rnA
'ICE =2V, Ie - 300 rnA
'ICE - 2 V, Ie - 200 rnA
'ICE":' 2 V, Ie ...: 250 rnA
VeE = 2 V, Ie - 300 rnA,
VeE - lV, Ic - 1lo rnA
Vcr =2 V, Ie = 200 mA
Vcr = 2 V, Ie = 275 rnA
VCE - 2 V, Ie '"'" 350 rnA
'ICE - 2 V,lc - 125 rnA
Vcr - 2 V, Ie ":'lUU rnA
VCE :... 2V, Ie - 27';) rnA
'ICE - lV, Ie - J5UmA
'ICE == 2 'I, Ie ~ 350 rnA
VeE - 2.\',lc = 350mA
VeE":' lV, Ie = ;loU rnA
'ICE = 2 V, Ie = 350 rnA
Min.
Max.
Mm.
+25°C
+25·C .
+25°C' 0.5 Ein to 0.5 EOII1
+25°C 0.5' [n to 0.5 EOII1
VR- 95 V
IF
.~,
Fig. Min.
1A -
= 350mA
. ,,~,
Motel: AI.llimits stated apply'io'tbecomple1e Darlington series except as specified for a single device type.
Nilte 2: The IINlomcurrent Omit guarantees agaiilstpartial. turn-on of the omput.
Note 3: The VIN(ON) Voltage limit guarantees a minim,um output sink current per the specified test conditions,
4.;.15
IB
18
2
2
2
-
-
-
l
-
2
2
-
Z
-
2
2
-
-
limits
Typ.
Max.
100
500
500
1.8
1.6
-
L:I';
1.1.
fc25.:
1.1
0.9
1.6
1.3
1.1
850
93U
350
3
575
ti75
3
3
250
750 ". H)on
3
1500
3·... 1150.
25 •
50
4
5
5
5
5
5
5
5
5
0
5
5
5
5
!l
5
0
5
5
Z
2
-
-
-
-
-
-
500
1000
-'
6
,7
-
-
-
-
-
..,..
"
-
-'
.'
-
-
--'
-
-',
-
-
-
15
250
250
1.7
Units
p.A
p.A
p.A
V
1.0
1.;1
V
V
1.6
V
V
V
V
V
V
p.A
p.A
p.A
p.A
p.A
p.A
q
1.1
1.8
1.5
1.3
1300
135U
500
1450
2400
18
V
13
3.3
3.6
3.9
2.4
V
V
V
V
V
2.7
V
3,0
6.0.
8.0
,10
12
5.U
6.0
7.0
II.U
3.0
2.4
V
V
V
V
V
V
V
V
-
-
V
V
V.
25
1000
1000
50
pF
ns
ns
p.A
2.0
V
II
SERIES ULS-2000H and ULS-2000R (Cont'd)
TEST FIGURES
OPEN
VeE
OPEN
VeE
OPEN
OWG. NO • .4-9129.
FIGURE 1A
FIGURE 18
OPEN
OPEN
;><>--""--0 OPEN
OWG. 110 .... ·9732
OW .. , 110.
FIGURE 2
OPEN
FIGURE 3
VeE
OPEN
01«>.110 .... 913" ...
FIGURE 4
FIGURE 5
V.
D'Ml.IIO. A-9735'"
FIGURE 6
FIGURE 7
4-16
SERIES ULS-2000H and ULS-2000R (Cont'd)
SERIES ULS·2000H
600
600
v
~
:,
""~ 400
Z
:J
V
2 200r---T----r---t---4~~ ~~~~~~~~=_t=~
~
ov NUMBER OF OUTPUTS
NUMBER OF OUTPUTS
CONDUCTING
~
~
o SIMULTANEOUSLY
o
20
40
60
PER CENT DUTY CYCLE
80
100
.l.-IO.ICllA
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT +50"C
CONDUCTING
o SIMULTANEOUSLY
o
20
40
60
PER CENT DUTY CYCLE
80
~Wti. he.
100
~-IO. 19'3A
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT +75°C
D
400
~
a
2200r---~~~~~~-i-O,~~~-t---i----t--=,--c~
~
o
v
NUMBER OF OUTPUTS
"~
CONDUCTING
o· SIMULTANEOUSLY
20
40
60
80
100
40
60
PER CENT DUTY CYCLE
PER CENT DUTY CYCLE
80
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT + 125°C
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT + 100"C
4-17
100
SERIES ULS-2000H and ULS-2000R (Cont'd)
SERIES ULS·2000R
600
600
u
o~
o~
:;-
~
i3
Z
co
u
0200'~--+---+---4----P~~~~~~~~~~~
~
o
U
NUMBER OF OUTPUTS
o SIMULTANEOUSLY
20
NUMBER OF OUTPUTS
~
CONDUCTING
~
40
60
'0
CONDUCTING
0 SIMULTANEOUSLY
20
o
100
40
60
PER CENT DUTY CYCLE
PER CENT DUTY CYCLE
DWG. 110. A-IO,883
D'IIG. NO. A.-IO,887
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT +7SoC
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT +SO"C
\
'~~
~+
ALLOWABLE PACKAGE
POWER DISSIPATION
SERIES ULS-2000H
and ULS-2000R
80
'09
~~
----.: 1-....
"
o
~~\
'b(,
~
"'0~
\
,
t\,
5
~
~
a
50
"
100
AMBIENlTEMPERATURE, TA IN
J''i(i.
4-18
150
°c
~O.
A-
IO.8S~
100
SERIES ULS·2000H and ULS·2000R (Cont'd)
600
,/
..Y
~,
I
...
E400
/
~
...
~
:l2
,/
=>
u
'"
o
t;
J!,
~.
«
200
~
l /
l,~ V'-
ou
o
o
V
/
V
V
/
/
MAXIMUM REQUIRED
INPUT CURRENT
600
400
200
INPUT CURRENT IN
~A
- liN
DM3. "0. A-IO.872A
COLLECTOR CURRENT
AS A FUNCTION OF INPUT CURRENT
,
600
-,,"
,~
1
z
...
~
,.'1#0"-..."
400
"
~
:l2
,J
~~v~ ~o'v
.470~·
=>
u
I'
(j
t
/
200
.~
~
~~
"'~
, 'ft'
ou
o
.
o
0,5
.--'
",' 4
I("
1,0
1.5
2_0
SATURATION VOLTAGE - VCE (SAT)
DWG. NO.
A-975~B
COLLECTOR CURRENT
AS A FUNCTION OF SATURATION VOLTAGE
'Complete part number includes a final letter to indicate package. H = hermetic dual in-line, R = ceramic dual in-line.
4-19
II
SERIES ULS-2000H and ULS-2000R(Cont'd)
INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE
2.',---.....- - , - - - , - -.....- - , - - - , - -.....---,
2.01---+---+---;--+--+-_-;""",,""'-+---1
J.
1
I.'
~
'Z
Ii
1.0
a
i
~
°2~.0~~2~.'-~3~.0~-~3.'~-~--~-~'~.0~-~'~.'-~'.·0
INPUT VOLTAGE· YIN
INPUT VOLTAGE - VIN
SERIES ULS-2002
SERIES ULS-2003
3.5r----.....---___r----.....----r-._-,
3.01-_+_~1----+---~~----i
2•. . - - - , - - - , - - - , - - - - , - - - , - - - , - - - - ,
~ I.~_-;
__~--+---+--~--~~=-
1
~
!<
...."'T--~--t=::;;Ill...
1· ......--;--~--b
~
0.51-~,.f£.---1--
0,
OL-_~_~
1.5
__
~_-L_~
2.5
3.0
3.5
INPUT VOLTAGE - VIN
2.0
4.0
DWG. 110. ""10.8711
SERIES ULS-2004
SERIES ULS-200S
4-20
SERIES ULS-2000H and ULS-2000R (Cont'd)
HERMETICALL Y·SEALED
DARLINGTON TRANSISTOR ARRAYS WITH MIL·STD·883
HIGH-RELIABILITY SCREENING
Hermetically-sealed Darlington arrays with high-reliability screening can be ordered by adding the suffix
"MIL" to the part number, for example, ULS-2001 H-MIL. If marking with the customers part number is
necessary in place of the Sprague Electric part number, this must be stated on the purchase order with the
marking desired.
Table I - 100% Production Screen Tests (All Hermetic Parts)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.1 thru 3.1.6
MIL-STO-883
Test Method
Screen
Internal Visual
Stabilization Bake
Thermal Shock
Constant Acceleration
Fine Seal
Gross Seal
Electrical
Marking
20 10,
1008,
1011,
2001,
1014,
1014,
Condo
Condo
Condo
Condo
Condo
Condo
Conditions
B
C
A
E
A
C
150°C, 24 Hours
a to lOO°C, 15 Cycles
30,000 G's, Y1 Plane
5 x 10-7 Maximum
Per specification
Sprague or customer part number, date code, lot
identification, index point
Table II - 100% High-Reliability Screening ("MIL" Suffix Parts Only)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.9 thru 3.1.15 and 3.1.18
MIL-STO-883
Test Method
Screen
Interim Electrical
Burn-In
Static Electrical
Dyna mic & Functional Electrical
Fine Seal
Gross Seal
External Visual
Table III -
Gp A,
Condo
Gp- A,
Gp A,
Gp A,
Condo
Condo
Subgp
A
Subgp
Subgp
Subgp
A
C
1
25°C per specification
l25°C, 160 Hours
1
25°C per specification
2 &3
-55°C & + l25°C per specification
4, 7 & 925°C per specification
5 x 10-7 Maximum
High-Reliability Qualification and Quality Conformance Inspection
MIL-STD-883, Method 5004, Class B, Paragraph 3.1.17
MIL-STD-883
Test Method
Test
Group
Group
Group
Group
5005,
1015,
5005,
5005,
5005,
1014,
1014,
2009
Conditions
A Subgp. 1-4, 7 & 9
B
C
D
5005,
5005,
5005,
5005,
Table
Table
Table
Table
Description
I
II
III
IV
Each production lot
Each production lot
End points, Gp. A, Subgp. 1, every 90 days
End points, Gp. A, Subgp. 1, every 6 months
4-21
II
ULN·2031A, ULN·2032A, AND ULN·2033A
TYPE ULN-2031A, ULN-2032A, AND ULN-2033A
HIGH-CURRENT DARLINGTON
TRANSISTOR ARRAYS
TYPE ULN-203IA, ULN-2032A, and
SPRAGUE
ULN-2033A High-Current Darlington Transistor Arrays are comprised of seven silicon Darlington pairs on a common monolithic substrate. The
Type ULN-203IA consists of 14 NPN transistors
connected to form seven Darlington pairs with NPN
action. The Type ULN-2032A (hFE = 500 min.) and
the Type ULN-2033A (hFE = 50 min.) consist of
seven NPN and seven PNP transistors connected to
form seven Darlington pairs with PNP action. All
devices feature a common emitter configuration.
These devices are especially suited for interfacing
between MOS, TTL, or DTL outputs and 7-segment
LED or tungsten filament indicators. Peak inrush
currents to 100mA are allowable. They are also
ideal for a variety of other driver applications such
as relay control and thyristor firing.
ULN·2031A
Type ULN-203IA, ULN-2032A, and ULN-2033A
transistor arrays are housed in 16-lead DIP plastic
packages which include a separate substrate connection for maximum circuit design flexibility.
ULN·2032A
ULN·2033A
ABSOLUTE MAXIMUM RATINGS at 25 C Free-Air Temperature
(unless otherwise noted)
Power Dissipation (anyone Darlington pair) .............................................................. 500mW
(total package) ....................................................................... 750mW
Derating Factor Above 25 C.......................................................................... 6.67mW/"C
Ambient Temperature Range (operating), TA ......
. . . . • • . • • . . • . . • . . . . • . . . • . . • . . • • . • . . . . • 0 C to +85 C
Storage Temperature Range, Ts..........
. ................................ -55 C to +125 C
Individual Darlington Pair Ratings:
Collector-to-Emitter Voltage, VCEO •.••••.
. ••.••..•..
. ......................................... 16V
Collector-to-Base Voltage, Vcso.. .......
. ......... .
. .......................................... 40V
Collector-to-Substrate Voltage, VCIO ..•..••.•.••.•..••.••.•
. .......................................... 40V
Emitter-to-Base Voltage, VESO
Type ULN-2031A ......................................................................................5V
Type ULN-2032A and ULN-2033A ...................................................................... .40V
Continuous Collector Current, Ic ........................................................................ 80mA
Continuous Base Current, Is ............................................................................. 5mA
NOTE:
The substrate must be connected to a voltage which is more negative than any collector or base voltage so as to maintain isolation between
transistors, and to provide normal transistor action.
These devices are also available in industrial-grade hermetic
packages with reduced package power capability. To order, change
the last letter of the part number from 'A' to 'R'.
4-22
ULN·2031A, ULN·2032A, AND ULN·2033A
(Cont'd)
ELECTRICAL CHARACTERISTICS AT 25 C
"
Characteristic
Symbol
Test Con,ditions
Collector-Base Breakdown Voltage
Collector-Substrate Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Type ULN-2031A
Type ULN-2032A and ULN-2033A
D-C Forward Current Transter Ratio
Type ULN-2031Aand ULN-2032A
Type ULN-2033A
Base-Emitter Saturation Voltage
Type ULN-2031A
'
Type ULN-2032A and ULN-2033A
Collector-Emitter Saturation Voltage
Type ULN-2031A and ULN-2032A'
BVC80
BVc10
BVcEO
BVE80
Ic = 500jLA
Ic = 500jLA
Ic = ImA
IE = 500jLA
40
40
16
5
40
hFE
V8E(SAT)
VCE(SAT)
Type ULN-2033A
Collector Cutoff Current
Min.
leEo
le80
VCE - 2V, Ic - 20mA
Ic
= 20mA, 18 = 500jLA
Ie = 20mA,
Ie = 80mA,
Ie = 20mA,
Ie = 80mA,
VeE" 8V
Ve8 = 10V
4-23
18 = 40jtA
18 = lmA
18 = 400jLA
18 = 2mA
500,
50
-
Limits
Typ.
Max.
Units
-
-
-
-
-
-
V
V
V
-
-
V
V
~
-
500
-
-
-
-
2
1
V
V
-
-
1.2
1.5
1.2
1.5
100
10
V
V
V
V
JLA
',' JLA
-
-,
-
U1S·204SH AND ULN·2046A
TYPE ULS-2045H AND ULN-2046A TRANSISTOR ARRAYS
(Three Isolated.Transistors and One Differential Amplifier)
THE ULS-2045H and ULN-2046A are generalpurpose transistor arrays each consisting of five
silicon N-P-N transistors on a single monolithic chip.
Two transistors are internally connected to form a
differential pair. Integrated circuit construction provides close electrical and thermal matching between
each transistor.
These arrays are well-suited for a wide range of applications such as: doc to VHF signal processing
systems; temperature-compensated amplifiers;
custom designed differential amplifiers and discrete
transistors in conventional circuits.
Three package configurations are available. Type
ULS-2045H is supplied in a hermetic 14-lead dual inline ceramic package and is rated for operation over
the military temperature range of - 55°C to
+ 125°C. Type ULN-2046A is electrically identical to
the ULS-2045H but is supplied in a dual in-line
plastic package rated for O°C to + 85°C ambients.
The ULS-2045H transistor array is also available
in an industrial-grade hermetic package for operation
over the temperature range of - 40°C to + 85°C. To
order, change the 'H' in the part number to 'R'.
ABSOLUTE MAXIMUM RATINGS at 25 C Free-Air Temperature
(unless otherwise noted)
ULS-2045H
ULN-2046A
EACH
TOTAL
EACH
TOTAL
TRANSISTOR
PACKAGE TRANSISTOR
PACKAGE
300
750
300
750
Power Dissi potion:
TA to +55°C .... .
TA to +75°C ... .
Derating Factor:
TA >+55°C.
~>+~~.....
...... .
-
-
8
-
6.67
-
UNITS
mW
mW
mW;oC
mW;oC
. ..................... 30Y
... 20V
.20V
. .................. 6V
. ....... 50mA
Collector-Base Voltage, VIs"lesO .
Collector-Emitter Voltage, Vls"leEO
Collector-Substrate Voltage, VIS"leIO (See note 2)
Emitter-Base Voltage, VIS"IEBO ...
Collector Current, Ie .
Operating Temperature Range, TA:
Type ULS-2045H.
Type UlN-2046A
Storage Temperature Range, t,g .
. -55°C to +125°C
. ... O°C to +85°C
. -65°C to + 150°C
Notes:
1.
The maximum ratings are limiting absolute values above which the serviceability may be impaired from the viewpoint of life or satisfactory per·
forma nee. The breakdown voltages may be far above the maximum voltage ratings. To avoid permanent damage to the transistor, do not
attempt to measure these characteristics above the maximum ratings.
2.
Pin 13 is connected to the substrate. This terminal must be tied to the most negative point in the external circuit to maintain isolation between
transistors and to provide for normal transistor action.
4-24
ULS·204SH AND ULN.2046A (Cont'd)
.....
STATIC ELECTRICAL CHARACTERISTICS at TA
2SC
Limits
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter ~reakdown Voltage
Collector-Substrate 8,eakdown Voltage
Emitter-Bose Breakdc;>wn Voltage
Collector Cutoff Current
Static Forward Current
Symbol
VIB"leBO
VIB"leEO
VIB"leIO
VIB"IEBO
leBO
leEO
h'E
Transfer Ratio
Collector-Emitter Saturation
VoltoQe
VeE(SATI
Bose-Emitter Voltage
VBE
Input Offset Current for
1101-h02
1
Min.
T est Conditions
Typ.
le~IO!,A,IE~O
20
60
le-lmA,IB-O
le-IO!,A,lel-O
IE-lO!'A,le-O
VeB IOV,IE-O
VCE-IOV,IB-O
Ie 10!,A, VeE 3V
Ie - I rnA, VeE - 3V
Ie-lOrnA, VeE-3V
Ie-lOrnA, Is -1 rnA
1'5
24
20
60
5
7
Max.
40
0.5
Units
V
V
V
V
nA
!,A
54
40
IE= I rnA, VeE=3V
IE lOrnA, VeE 3V
le-ImA, VCE-3V
-
100
100
0.23
V
0.715
0.800
0.3
2
!,A
V
V
Matched Poi, Ql and 02
Magnitude of. Input Offset
Voltage for Differential Pair
YSE1- VSE2
le-ImA, VeE-3V
0.45
5
mV
Magnitude of Input Offset
YSE3- VBE4
le-ImA, VeE-3V
5
: VSE4- YSE5
IC= lmA, VCE=3V
VBE5- VBE3
le-ImA, VeE-3V
le-ImA, VeE-3V
0.45
0.45
0.45
mV
mV
mV
Voltage for Isolated Tr'ansislors
Bose-Emitter Voltage
~
",T
Temperature Coefficient
",V'C
Temperature Coefficient of
Magnitude of Input· Offset Voltage
le~
ImA,
VeE~3V
L:T
5
5
1.9
mV/"C
1.1
!'V/'C
II
DYNAMIC ELECTRICAL CHARACTERISTICS at TA
2SC
Limits
Charadel istie
Symbol
Test Conditioi1$
Typ.
Small-Signal Common-Emitter
Forward Current T ronsfer Ratio
le~
Small-Signal Common-Emitt€r
Short-Circuit Input Impedance
le-ImA, VCE-3V, I-1KHz
3.5
Small-Signal Common-Emitter
Open-Circuit Output Impedance
le-lmA. VCE-3V, I-1KHz
15.6
Small-Signal Common-Emitter
Open-Circuit Reverse
Voltaqe-Transfer Ratio
le-ImA, VCE-3V, I-1KHz
~
ImA, VCE=3V,
~
1KHz
IT
(EB
Ie
Emitter-la-Bose Capacitance
Collector-la-Bose Capacitance
CeB
VeB - 3V, Ie - 0, f - I MHz
Ves-3V,le- O,I-IMHz
N.F.
Ie - I OO!,A, VeE - 3V, Rg - I
I ~ 1KHz, BW = 15.7KHz
Gain-Bandwidth Product
Collector-ta-Substrate
Capacitance
Noise Figure
YES
3mA, VeE
I~
Min.
3Y, IE
Note:
Characteristics apply for each transistor unless otherwise sp-ecified.
4-25
Units
Kf!
,umho
1.8 x 10"
3V
0, f
Max.
110
300
1 MHz
550
0.6
0.6
2.8
K~!
3.25
MHz
pF
pF
pF
dB
ULN-2046A-l
ULN-2046A-l TRANSISTOR ARRAY
The ULN-2046A-I general-purpose transistor array
consists of five silicon NPN transistors, two of which
are connected as a differential amplifier. The mopolithic construction provides close electrical and thermal matching between all transistors.
Except as shown in the following electrical characteristics, the ULN-2046A-I transistor array is identical
to the ULN-2046A.
Limits
Max.
Characteristic
Symbol
Test Conditions
Min.
Typ.
Collector-Base Breakdown Voltage
Collector -Emitter Breakdown Voltage
Collector-Substrate Breakdown Voltage
Collector Cutoff Current
BVc80
BVcEO
BVc10
IC80
ICEO
hFE
IC=JOIAIE=O
Ic = 1 rnA, 18 = 0
Ic = 10 .uA, ICI = 0
Vc8 =lOV,IE=0
VCE = 10 V, 18 = 0
Ic = I rnA, VCE = 3 V
40
30
40
60
60
-
-
-
100
5.0
100
-
Static Forward Current
Transfer Ratio
-
30
-
-
Units
V
V
V
nA
.u A
NOTE: Pin 13 is connected 10 the substrate, This terminal must be tied to the most negative point in the external circuit to maintain isolation between
transistors and to provide for normal transistor action.
4-26
,1
UlN·2047A
TYPE ULN-2047 A TRANSISTOR ARRAY
(Three Differential Amplifiers)
THE ULN-2047A is a silicon NPN multiple transistor array comprising three independent differential
amplifiers. It is specifically intended for use in switching applications such as electronic organ keyboards.
All base leads are brought out on one side of the 16lead plastic dual in-line package to simplify printed
wiring board layout. A separate substrate connection
permits maximum circuit design flexibility.
The Type ULN-2047A Transistor Array is supplied
in a 16-pin dual in-line plastic package.
ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature
Power Dissipation, Po (anyone transistor) ............................ 300 mW
(total package) ............................... 750 mW*
Operating Temperature Range, TA ..•••.•••.•• , ••••••....•••.•.•• O°C to +85°C
Storage Temperature Range, Ts ............................ -55°C to +150·C
*Derate at the rate of 6.67 mWrC above 25°C.
ELECTRICAL CHARACTERISTICS at 25°C Free-Air Temperature
Collector-Emitter Breakdown Voltage, BV cEO (note 1)
at Ic = 5 mA .............................•........................ 30V Min.
Emitter Cutoff Current, lEBO (note 2)
at VEB = 5 V .........................................•.......... 100 nA Max.
Collector Cutoff Current, IcES (note 1)
at VCE= 25 V........................ " ......................... 100 nA Max.
D-C Forward Current Transfer Ratio, hFE (note 1)
at VeE = 2 V, Ic = 0.1 mA ............................................ 30 Min.
atV cE = 2V,Ic = 10mA ............................................ 75 Min.
Differential Input Offset Voltage, V,O (note 1)
atVcE = 2V, ICI = IC2 = 1 mA ................................... 5mV Max.
NOTES:
.
1. All other pins common to emitter of transistor under test.
2. Base and collector of associated transistor connected to emitter, all other pins common to base of transistor under test.
4-27
II
,
ULN·20S4A
TYPE ULN-20S4A TRANSISTOR ARRAY
(Dual Independent Differential Amplifiers)
THE ULN-2054A is a transistor array consisting of
six silicon NPN transistors on a single monolithic
chip. The transistors are internally interconnected to
form two independent differential amplifiers.
The ULN-2054A is intended for a wide range of applications requiring extremely close electrical and thermal matching characteristics. Some applications are:
cascade limiter circuits; balanced mixer circuits; balanced quadrature/synchronous detector circuits; balanced (push-pull) cascade/sense/IF amplifier circuits;
or in almost any multifunction system requiring RF/
Mixer/Oscillator, converter/IF functions.
Available in a 14-lead dual in-line plastic package
the ULN-2054A is rated for operation over a ooe to
+85°e ambient temperature range.
Other features are:
•
Input Offset Voltage - 5mV max.
•
Input Offset Current - 2 pA max.
•
Voltage gain (single-stage double ended output)
- 32 dB typo
•
Common-Mode Rejection Ratio (each amplifier)
-100 dB typo
ABSOLUTE MAXIMUM RATINGS at 25 C Free-Air Temperature
(unless otherwise noted)
Power Dissipation TA to +55°C:
Each Transistor ...... .
Total Package .... .
Derating Factor, Total Package, TA~55°C
Collector-Base Voltage, VIBRICBO ...
Collector-Substrate Voltage, VIBRICIO (See note 2)
Collector-Emitfer Voltage, VIBRICEO ..... .
Emitter-Base Voltage, VIBRIEBO
Collector Current, Ic
Base Current IB ....
Operating Temperature Range, TA
Storage Temperature Range, t,q .
. ............. 300mW
. .... 750mW
.6.67mW/oC
. .20V
........ 20V
. ...... 15V
..... 5V
...... 50mA
. ......... 5mA
..... O°C to +85°C
... -65°C to + 150°C
Notes:
1. The maximum ratings are limiting absolute values above which the serviceability may be impaired from the viewpoint of life or satisfactory
2.
performance. The breakdown voltages may be far above the maximum voltage ratings. To ovoid permanent damage to the transistor, do
not attempt to measure these characteristics above the maximum ratings.
Pin 5 is connected to the substrate. This terminal must be tied to the most negaiive point in the extern!;!1 circuit too-maintain isolation between
transistors and to provide for normal transistor action.
4-28
ULN-20S4A (Cont'd)
STATIC ELECTRICAL CHARACTERISTICS: at TA
25C
limits
Symbol
CharacteristiC
Collector-Bose Breakdown Voltage
Base-Emitter Volta'ge
VIBR}CBO
VIBR}CIO
VIBR}CEO
VIBR}EBO
ICBO
VBE
Temperature Coefficient of Base-Emitter
Voltage
L:'T
Collector-Substrate Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
6. VBE
Input Offset Voltage
Via
Input Offset Current
010
Input Bias Current
Quiescent Operating Current Ratio
II
~
C Q2
IClQ5}
IClQ6}
Temperature Coefficient
Magnitude of Input-Offset Voltage
16.6.~101
Test Conditions
IC= 10,uA, IE=O
Ic-IO,uA,IC1-0
Ic-ImA,IB-O
IE 10,uA,IC 0
VCB-I OV, IE-O
IC SO,uA, VCB 3V
Ic-ImA, VCB-3V
Ic-3mA, VCB-3V
Ic-IOmA, VCB-3V
Ic-I mA, VCB-3V
Min.
20
20
IS
S
Typ.
Max.
60
60
24
7
0.630
0.715
0.7S0
0.800
-1.9
IEIQ3 -IEIQ4J - 2mA, VCB - 3V
IEIQ3} -IEIQ4} - 2mA, VCB - 3V
IEIQ3J~IEIQ4J~2mA, VCB=3V
IEIQ3} - 2mA, VCB - 3V
0.45
0.3
10
0.98-1.02
IEIQ4} - 2mA, VCB - 3V
0.98-1.02
100
0.700
0.800
0.8S0
0.900
5
2
24
V
V
V
V
nA
V
V
V
V
mV/,C
mV
,uA
,uA
-
1.1
IEIQ3}-IEIQ4}-2mA, VCB-3V
Units
,uV/,C
II
DYNAMIC ELECTRICAL CHARACTERISTICS: at TA = 25 C
Characteristic
Symbol
Common-Mode Reiection Ratio
For each Amplifier
CMR
AGe Range, One Stage
AGC
Voltage Gain, Single Stage
Dovble-Ended Output
A
AGe Range, Two Stage
AGC
Voltage Gain, Two Stage
Double-Ended Output
A
Small-Signal Common-Emitter
Forwa"rd Current Transfer Ratio
hie
Small-Signal Common-Emitter
Short-Circuit Input Impedance
Test Conditions
Min.
Limits
Typ.
Max.
Units
VCC = 12V, VEE = -6V, Vx = 3.3V,
1= 1kHz (See flgure 1)
VCC-12V, VEE- -6V, Vx-3.3V,
1= 1kHz (See.fogure 2)
100
dB
75
dB
VCC-12V, VEE- -6V, Vx-3.3V,
I = I kHz (See flgure 2)
Vcc-12V, VEE- 6V, Vx -3.3V,
1= 1kHz (See floure 3)
VCC = 12V, VEE = - 6V, Vx = 3.3V,
I = I kHz (See flgure 3)
32
dB
lOS
dB
60
dB
Ic-ImA, VCE-3V, I-1kHz
110
-
hie
IC= 1mA, VCE=3V, 1= 1kHz
3.5
Small-Signal Common-Emitter
Open-Circuit Output Impedance
hoe
IC-I mA, VCE-3V, I-1kHz
15.6
Small-Signal Common-Emitter
Open-Circuit Reverse
Voltage-Transfer Ratio
h,e
Ic-ImA, VCE-3V, I-1kHz
1.8 x 10.4
Gain-Bandwidth Product
(for Single Transistor)
IT
Ic-3mA, VCE-3V
550
MHz
Noise Figure (for Single Transistor)
N.F.
3.25
dB
Noise Figure {for each Amplified
N.F.
VCE-3V, I-1kHz, IC-IOO,uA,
R.=IKn, BW=IS.7 kHz
1= 100MHz
8
dB
Note:
Characteristics apply for each transistor unless otherwise specified.
4-29
Kn
,umho
-
ULN-2054A!(Cont'd)
AMPLIFIER TEST CIRCUITS
Vee
Vee
5OO~-4---o
A-10,3~
Figure 3
OPEN
OPEN
OWG.NO. "'-9735,1,
OWG. NO • .1.-3732
D'IKl.IIO.....97~"
Figure ..
Figure 6
FigureS
Vs
OPEN
I,
OPEN
OI'G. MO. ,1,-9736
Figure 7
0'1/6."0. A-10,351
Figure.
4-3i·
ULN-2061M thru ULN·2077B (Cont' d)
14
12
..,.
UlN_2066/678
UlN-2010/1'78
10
-;,
.,
E
;,
8
~
6
::>
u
.,'.
}.
~
'Z
aI' .
~
~
~
~
.....
2
/"
./
.....
~
..__",fIII>--
#-"
:;;t-;,.,-
--
##
##
;:-~ ~
##
.....--
,.
"
DWG. 110.
./
~
##'"
~##::
INPUT vOLTAGE - VIN
/"
./
V"
~
11
INPUT VOLTAGE· VIN
A~fO.363
INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE
UlN.L. ,,- .".,--UlN·"'''7 ..... . .--l-
,
",#
ULN-2065/6711
r
/
~ /(
III
y
0
.l
COLLECTOR CURRENT AS A FUNCTION
OF INPUT CURRENT
UlN-2061M
UlN-206.-IO.232
JEDEC style MO-OOIAC. The Type ULS-2083H is
electrically identical to the ULN-2083A but is supplied
in a hermetic dual in-line package for operation over
the temperature range of _55°C to +125°C. This
package conforms to the dimensional requirements of
Military Specification MIL-M-38510 and can meet
all of the applicable environmental requirements of
Military Standard MIL-STD-883.
ELECTRICAL CHARACTERISTICS AT 25°C Free-Air Temperature
Characteristic
Symbol
Test Conditions
Min.
Limits
Typ.
Max.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector -Substrate Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
60
24
60
6.9
-
-
Differential I nput Offset Voltage*
Differential I nput Offset Current*
VIO
1;0
Ie = 100 "A
Ic = 1 mA
ICI = 100 "A
IE = 500 "A
VcE=lOV
VCB=!OV
VCE = 3V, Ic = lOmA
Ie = 5U mAo IB = 5 mA
VCE = 3V, Ie = IOmA
VCE = 3 V, Ic = 50 mA
VeE = 3 V, Ic = 1 mA
VCE - j V, Ic = 1 mA
20
15
20
5.0
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
D-C Forward Current Transfer Ratio
BVcBo
BV cEO
BVClo
BV EBo
I CEO
ICBO
VBE
VCE{SATJ
hFE
-
650
40
40
740
400
76
75
-
0.7
-
1.2
10
1.0
850
700
Units
V
V
V
V
)lA
jJ.A
mV
mV
5.0
2.5
mV
"A
'Applies only to transistors Q, and Q, when connected as a differential pair.
ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature
Power DiSSipation, Po (anyone transistor). . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. ........................... 500 mW
(total package) ........................................................................ 750 mW*
Operating Temperature Range, TA (ULN-2083A) ......................................................... O°C to +85°C
(ULS-2083H) ...................................................... -55°C to +125°C
Storage Temperature Range, Ts ..................................................................... -55°C to + 150°C
'Derate at the rate of 6.67 mW/"C above 25°C.
4-43
D
ULN·2083A AND ULS·2083H· (Cont'd)
TYPICAL STATIC CHARACTERISTICS as a Function of Collector Current
~ 85
o
~
,..
I
~
r=--r-
80
5
·V'"
V
V
V
~
5
V
I-'
0-V 1/1-'
V
50
0.1
~
.---....
g
;:: 07
T.I. ~J
~
i
:tl 0.6
L-Wl
~
..-- --t-tl
TA = 25°C
1/1-'
~
05
TA ;
~ 04
To • O"C
~I-'
I J
e
ui
§
a3
a:
go.
2
~
10
3.0
10
OOLLECTOR CURREKT, Ie, IN rnA
100
Ul8~
L~V
~
TA / 5 1
.:: 0 .1
0.3
V
V
Ii
~
70~C'
I--: I-:
0 10
D-C FORWARD CURRENT TRANSFER RATIO
r~
10
20
5.0
COLLECTOR CURRENT, Ie IN rnA
2.0
I
Me· cJ
v
~
O.1l
T•• 25°C
_0.8
~)I'
7fo""
....... V
....... v~
J
. . .V
7
!--'"
t-"I-'
50
V
100
0.1
.....
......
V J.,.oi-'
VI"'"
~f-"
'"
I I
IIVf":3~
vf-"
1J
30
10
I0
3.0
COLLECTOR CURRENT, Ie IN mA
0.3
BASE-EMITTER SATURATION VOLTAGE
kr.:5
htfJc
.....
V
6~
5.0
10
20
COLLECTOR CURRENT, Ie IN mA
2D
~~
I:
9
.,.....,
100
COLLECTOR-EMITTER SATURATION VOLTAGE
0.9
8
50
D"'';."0 • .Io-IO.:>36
il'f/ij.
100
110. A-IO. 2~S
BASE-EMITTER VOLTAGE
> 7
E
HVa:·3V
i!:
--i V"3V JL
T• • 250C
QI-~ONLY
CE
T. -2.5OC
5
~
4
~ 1.0
l/V
~ 3
~
2
I
i!: 0.5
~
V
I
i;;
0.1
o
0.2
1.0
20
0.5
COLLECTOR CURRENT, Ie IN mA
V
~
t5 o. 2
i5
o
"., fo""
~
V
Q.
b-::'
5.0
V
.1
00.1
10
""',,, NO. A·IO.7H
DIFFERENTIAL INPUT OFFSET VOLTAGE
IL
02
0.5
1.0
2.0
COLLECTOR CURRENT, Ie IN mA
5.0
IMi.JII) •• ·IO./1IO
DIFFERENTIAL INPUT OFFSET CURRENT
4-44
10
ULN·2083A.l/ULN·2086A
ULN-2083A-l
TRANSISTOR ARRAY
This device is a general-purpose transistor array for
use in medium-current switching and differential amplifier applications. With the exception of the increased breakdown voltages shown below, the ULN2083A-1 is identical to the ULN-2083A transistor
array.
OWG.NO. A-IO.232
Limits
Symbol
BVcBo
BVcEO
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Test Conditions
Ic = IOOMA
Ic = I mA
Min.
40
30
Typ.
60
Max.
-
-
Units
V
V
II
ULN-2086A
TRANSISTOR ARRAY
The ULN-2086A general-purpose transistor array
consists of five silicon NPN transistors, two of which
are connected as a differential amplifier. The monolithic construction provides close electrical and thermal
matching between all transistors.
With the exception of the collector cutoff current
specifications listed below and the omission of guaranteed limits on input offset voltage and input offset
current, the ULN-2086A is identical to the ULN2046A transistor array.
Limits
Characteristic
Collector Cutoff Current
Symbol
ICBO
IcEO
Test Conditions
VCB = 10 V, Ie = 0
VCE = 10 V, IB = 0
Min.
-
-
Typ.
Max.
Units
-
100
5.0
nA
MA
NOTE: The substrate terminal must be tied to the most negative point in the external circuit to maintain isolation between transistors and to provide for
normal transistor action.
4-45
UDN·2580A
UDN~25aOA
a·CHANNEL HIGH·CURRENT SOURCE DRIVER
ORIGINATING from a need to provide an interface
from NMOS to high-current inductive loads, the
UDN-2580A 8-channel source driver is very versatile
and has been used as an incandescent or LED driver
and as a power predriver. The device functions like a
PNP amplifier, but an NPN Darlington has been added to provide suitable current gain. By switching the
input low (made mote negative), the output is turned
ON and the load current is sourced from the compound output.
Most NMOS logic includes depletion load and is
capable of pulling the input of the UDN-2580A
driver sufficiently high to turn OFF the device. For
those few instances where open-drain NMOS is to be
used, or the depletion load is excessively high, external pull-up resistors may be employed.
Although the UDN-2580A was chiefly intended for
use with ,inductive loads, it will help solve many other
design problems as well. When combined with the
ULN-2068B quad 1.5 A driver, the UDN-2580A will
effectively drive the segments of a common-cathode
LED display. Alternatively, it may be employed as a
digit driver with common-anode LEDs in combination with a ULN-2804A Darlington array. Typical
applications are shown on the following pages.
The UDN-2580A 8-channel, high-current source
driver is furnished in an 18-pin dual in-line plastic
package with the outputs pinned opposite the inputs
for ease in circuit layout. This device is also available
in an industrial-grade hermetic package with reduced
package power capability by changing the last letter
of the part number from 'A' to 'R'.
GND
,OK
'N 0---1'#-----1
3K
ONE OF
'------11---0 OUT
EIGHT DRIVERS
-v
OI'lG.HO. ,1,..10.555
Absolute Maximum Ratings at 25°C Free-Air Temperature
for any Source Output (unless otherwise noted)
Circuit voltages are referenced to circuit ground (pin #9)
unless otherwise noted:
Output Voltage, V e E , . , ".,., . ., .. ., . ., . ., " .. ,"" . ..
. .. ,,-50 V
Input Voltage, V'N " .
.".,," ....... , " "." -30 V
Output Current, louT. .
. . , " ., " ., ., , ., , .. ., " , "
. ., -500 rnA
Ground Terminal Current, IGND . .
. ... ,.".'".,' ..
., .. ,' .... , .. 3A
Operating Temperature Range, TA" . , , .•.. , ..•. , •.. , . , . . . . . . . .
. OOC to +70 o C
Storage Temperature Range, Ts........ " " ............... .,. . -55°C to + 150°C
Power Dissipation, Po
(Single Output) ..
....... " .. , ... , .. , .. , .... ,..
., ....... , ... 1.0 W
(Total Package)
. ....... "......
. ............. 2.25 W
...................... , , ... 18.18 mW
or 55°C/W
Derating Factor ...
rC
4-46
UDN-2580A (Cont'd)
ELECTRICAL CHARACTERISTICS at 25°C (Unless Otherwise Noted)
Circuit voltages and currents are referenced to ground (pin #9) unless otherwise specified; V substrate is1'at
-50V unless otherwise specified.
Characteristic
Output Leakage
Current
Symbol
IcEx
Test Condition
Vf
VOUT = -50 V, TA = 25°C
VIN = -O.5V
VOUT = -50 V, TA = 70°C
VIN = -0.4 V
louT = 25 rnA (pulsed)
VIN = -0.4 V
REFERENCE = -50 V
louT = -100 rnA, VIN = -2.4
louT = -225 rnA, VIN = -3.0
louT = -350 rnA, VIN = -3.6
VIN = -3.6 V, louT = -350 rnA
VIN = -15 V, louT = -350 rnA
Ic = 5UOp.A, VOUT - -50V
TA = 70°C
Ic = 100 rnA, VOUT <1.7 V
Ic = 225 rnA, VOUT < 1.8 V
Ie = 350 rnA, VOUT = 1.9 V
louT = -500 p.A, VOUT = -50 V
TA = 70°C
VSUB - -5U V, VOUT - -z.U V
TA = +70°C
IF = 350 rnA
CIN
TpHL
TpLH
0.5 EIN to 0.5 EouT
0.5 EIN to 0.5 EouT
Output Sustaining
Voltage
LVCE(suS)
Output Saturation
Voltage
VCE(ON)
Input Current
IIN(ON)
I nput Current
IIN(OFF)
Input Voltage
VIN(ON)
Input Voltage
VIN(OFF)
t;lamp U(OOe
Leakage Current
Clamp Diode
Forward Voltage
Input Capacitance
Turn On Delay
Turn Off Delay
IR
'Pulsed Test, Tp ::; 300pS, Duty Cycle::; 2%.
4-47
Min.
Max.
Units
50
p.A
100
p.A
35*
V
1.7
1.8
1.9
500
2.1
50
-2.4
-3.0
-3.6
V
V
V
p.A
rnA
p.A
V
V
V
v
-0.25
:IV
p.A
2.0
V
25
5
t>
1lI'.
p's
p.S
II
UDN·2580A (Cont'd)
TYPICAL APPLICATIONS
+v
----l
-j
----1
----1
INDUCTIVE
LoAD
-30V
-j
-j
-j
-j
-j
-j
4-48
UDN·2580A (Cont'd)
TYPICAL APPLICATIONS (Cont.)
r-----------.,,
+5V
+5V
r-----------,
r.-_-....------.
nr_-_---,
DC
LOAD
-l
,
+-,'---_--'
UDN-2580A
L ___________
..J
40
300
11
3
rOUT
rnA
200
UDN-2580A
+70°C AMB.IENT
100+-------~------~~~--_4-~-~--_4-------_1
o
20
40
DUTY CYCLE c%
60
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT + nrc
4-49
e.o
100
Series ULN·2800A
SERIES ULN-2800A
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
IDEALLY SUITED for interfacing between low·
level digital logic circuitry and high-power peripheralloads, the Series ULN-2800A high-voltage, highcurrent Darlington transistor arrays feature peak load
current ratings of 600 mA (Series ULN-2800A and
ULN-2820A) or 750 mA (Series ULN-2810A) for
each of the eight drivers in each device. Under the
proper conditions, high-power loads of up to 4 A at
SOV (200 W at 23% duty cycle) or 3.2 A at 95 V (304 W
at 33% duty cycle) can be controlled. Typical loads
include relays, solenoids, stepping motors, multiplexed
LED and incandescent displays, lind heaters. All devices feature open collector outputs and integral diodes for inductive load transient suppression.
The Series ULN-2801A devices are general purpose
arrays which may be used with standard bipolar digital
logic using external current limiting, or with most
PMOS or CMOS directly. All
,
--,-'
"G.IIQ. A·IO.2211
Series ULN-280SA
(each driver)
Series ULN-2804A
(each driver)
4-51
Series ULN·2800A (Cont' d)
SERIES ULN·2800A
ELECTRICAL CHARACTERISTICS AT 25°C (unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
IcEx
Test
Fig.
Applicable
Devices
1A
All
1B
Collector-Emitter
Saturation Voltage
Input Cu rrent
Input Voltage
VCEISAT)
ULN-2802A
ULN-2804A
2
All
IINION)
I'NIOFF)
V'NION)
3
4
5
ULN-2802A
ULN-2803A
ULN-2804A
ULN-2805A
All
ULN-28a2A
ULN-2803A
ULN-2804A
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn·Off Delay
Clamp Diode
Lea kage Cu rrent
Clamp Diode
Forward Voltage
hFE
2
ULN-2805A
ULN-2801A
C'N
t plH
t pHl
I.
6
All
All
All
All
VF
7
All
-
Test Conditions
VCE = 50 V, TA = 25°C
VCE = 50 V, TA = 70°C
VCE - !JUV, I ... - /uvG, Y'N - O.UV
VCE = 50 V, TA = 70°C, Y'N = 1.0V
Ic = 100 mA, 18 = 250/lA
Ic = 200 mA, 18 = 350/lA
Ic = 350 mA, 18 = 500/lA
Y'N = 17V
Y'N = 3.85 V
Y'N = 5.0 V
Y'N = 12 V
Y'N = 3.0V
Ic = 500 /lA, TA = 70°C
VCE = 2.0 V, Ic = 300 mA
VCE = 2.0 V, Ic = 200 mA
VCE = 2.0 V, Ic = 250 mA
VCE = 2.0V, Ic = 300 mA
VCE = 2.0V, Ic = 125 mA
VCE = 2.0 V, Ic = 200 mA
VCE = 2.0 V, Ic = 275 mA
VCE = 2.0 V, Ic = 350 mA
VCE = 2.0 V, Ic = 350 mA
VCE = 2.0 V, Ic = 350 mA
0.5 E;, to 0.5 Eo",
0.5 E;, to 0.5 Eo",
V. = 50V, TA = 25°C
V. = 50V, TA = WC
IF = 350 mA
4-52
Limits
Min. Typ. Max.
-
-
-
-
-
-
-
-
50
100
500
500
-
0.9
1.1
-
1.1
-
1.3
1.6
1.25
1.35
0.5
1.45
2.4
50
1.3
0.82
0.93
0.35
1.0
1.5
65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.4
1000
-
-
-
-
15
0.25
0.25
-
-
25
1.0
1.0
50
100
2.0
-
-
-
-
-
-
-
-
-
-
-
1.7
Units
/lA
/lA
/lA
/lA
V
V
V
mA
mA
mA
mA
mA
/lA
V
V
V
V
V
V
V
V
V
pF
/lS
/lS
/lA
/lA
V
Series UlN·2800A (Cont' d)
SERIES ULN-2810A
ELECTRICAL CHARACTERISTICS AT 25°C (unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
Test
Fig.
Applicable
Devices
1A
All
IcEx
1B
Collector- Emitter
Saturation Voltage
VCEISAT)
Input Current
IINION)
I,N(OfF)
Input Voltage
V'N(ON)
2
3
4
5
ULN-2812A
ULN-2814A
All
ULN-2812A
ULN-2813A
ULN-2814A
ULN-2815A
All
ULN-2812A
ULN-2813A
ULN-2814A
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn·On Delay
Turn-Off Delay
.Clamp Diode
Leakage Current
Clamp Diode
Forward Voltage
hFE
C'N
tplH
t pHl
IR
VF
2
-
6
7
ULN-2815A
ULN-281lA
All
All
All
All
All
Limits
Min. Typ. Max.
Test Conditions
VCE = 50V, TA = 25°C
VCE = 50 V, TA = 70°C
VCE = 50 V, TA = 70°C, Y'N = 6.0 V
VCE = 50 V, TA = 70°C, Y'N = 1.0 V
Ie = 200 mA, I, = 350 I'A
Ic = 350 mA, I, ~ 500l'A
Ic = 500 mA, Is = 6OOl'A
V,N =17V
Y'N = 3.85 V
Y'N = 5.0V
Y'N = 12V
V,N = 3.0 V
Ic = 500 I'A, TA = 70°C
VeE = 2.0 V, Ie = 500 mA
VeE = 2.0 V, Ie = 250 mA
VeE = 2.0 V, Ie = 300 mA
VeE = 2.0 V, Ie = 500 mA
VeE = 2.0 V, Ie = 275 mA
VCE = 2.0 V, Ie = 350 mA
VeE = 2.0 V, Ie = 500 mA
VeE = 2.0 V, Ic = 500 mA
VCE = 2.0 V, Ie = 350 mA
VCE = 2.0 V, Ie = 500 mA
0.5 E'n to 0.5 Eo",
0.5 C to 0.5 Eo",
VR= 50 V, TA = 25°C
VR= 50 V, TA = 70°C
IF = 350 mA
I, = 500 mA
4-53
-
---
--
-
-
-
-
-
--
-
-
-
-
-
50
1.1
1.3
1.7
0.82
0.93
0.35
1.0
1.5
65
-
-
-
-
-
-
-
-
-
-
-
--
50
100
500
500
1.3
1.6
1.9
1.25
1.35
0.5
1.45
2.4
-
17
2.7
3.0
3.5
7.0
8.0
9.5
2.6
-
-
1000
900
-
-
.-
-
-
-
15
0.25
0.25
-
--
25
1.0
1.0
50
100
2.0
2.5
-
-
-
-
1.7
-
2.1
Units
I'A
I'A
I'A
I'A
V
V
V
mA
mA
mA
mA
mA
I'A
V
V
V
V
V
V
V
V
pF
I's
I's
I'A
I'A
V
V
II
Series ULN·2800A (Cont' d)
SERIES ULN-2820A
ELECTRICAL CHARACTERISTICS AT 25°C (unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
IcEx
Test
Fig.
Applicable
Devices
lA
All
IB
Collector-Emitter
Saturation Voltage
VCE(SAT)
Input Current
I,N(ON)
I'N(OFF)
Input Voltage
V'NtON)
2
3
4
5
ULN-2822A
ULN-2824A
All
ULN-2822A
ULN-2823A
ULN-2824A
ULN-2825A
All
ULN-2822A
ULN-2823A
ULN-2824A
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode
Leakage Current
Clamp Diode
Forward Voltage
hFE
2
C'N
tPlH
tpHl
I.
-
V,
-
6
7
OLN-2825A
ULN-2821A
All
All
All
All
All
Test Conditions
VCE = 95V, TA = 25°C
VCE = 95 V, TA = 70°C
VCE = 95V, TA = 70°C, Y'N = 6.0V
VCE = 95 V, TA = 70°C, Y'N = 1.0 V
Ie = 100 rnA, Ie = 250 JlA
Ic = 200 rnA, Ie = 350 JlA
Ic = 350 rnA, Ie = 500 JlA
Y'N = 17 V
Y'N = 3.85 V
Y'N = 5.0 V
Y'N = 12 V
Y'N = 3.0 V
Ic = 500 JlA, TA = 70°C
VCE = 2.0 V, Ic = 300 rnA
VCE = 2.0 V, Ic = 200 rnA
VCE = 2.0 V, Ic = 250 rnA
VCE = 2.0 V, Ic = 300 rnA
VCE = 2.0 V, Ic = 125 rnA
VCE = 2.0 V, Ic = 200 rnA
VeE = 2.0 V, Ic = 275 rnA
VCE = 2.0 V, Ic = 350 rnA
VCE = 2.0 V, Ic = 350 rnA
VCE = 2.0 V, Ic = 350 rnA
Limits
Min. Typ. Max. Units
-
-
-
-
1.1
1.3
-
-
4-54
0.9
50
0.82
0.93
0.35
1.0
1.5
65
-
-
-
-
-
-
-
-
-
-
-
-
-
1000 -
0.5 E;n to 0.5 Eo"
0.5 E;n to 0.5 Eo"
V. = 95V, TA = 2SOC
V. = 95V, TA = 70°C
IF = 350 rnA
-
-
15
0.25
0.25
1.7
50
100
500
500
1.1
1.3
1.6
1.25
1.35
0.5
1.45
2.4
-
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.4
JlA
JlA
JlA
JlA
V
V
V
rnA
rnA
rnA
rnA
rnA
JlA
V
V
V
V
V
V
V
V
V
-
25
1.0
1.0
50
100
2.0
pF
JlS
JlS
JlA
JlA
V
Series ULN-2800A (Cont' d)
TEST FIGURES
OPEN
VCE
OPEN
VCE
OpfN
I
FIGURE IA
FIGURE II
OpfN
OPEN
hFE-t
... OpfN
,:»-~_
OWS. 110 • .1-9732
OWi. 110. A-9nl
FIGURE 2
FIGURE 3
OPEN
DWI.IIO....97""
FIGURE 4
FIGURE 5
FIGURE 6
FIGURE 7
OpfN
4-55
44
Il
Series ULN·2800A (Cont' d)
600
,.
.,
,
~'
6~
o
/
"',
...'t
~
.,.;
0.5
",,0
'k'~
I
..,'t
I
""
V"
J .0
I
,
/
I
~~~ov
I;;'
I
!L
I
, 'fir
,r
.
o
600
j
',,-0"-"
E
~ 400
6~
l
'/
2.0
L
V
I
/
/
~
~
REQUIRED
~ MAXIMUM
INPUT CURRENT
200
400
600
INPUT CURRENT IN IlA - liN
SATURATION VOLTAGE - VCE (SAn
OWG.NO. A-975!1B
DWG. MO. A-1O,872A
COLLECTOR CURRENT
AS A FUNCTION OF SATURATION VOLTAGE
COLLECTOR CURRENT
AS A FUNCTION OF INPUT CURRENT
,
D,vle,1 LIMIT
,.
--- ---
\" '
500 Df.VlCE LIMIT-SElIn ULN-211OA
u
~
:(
«10
,....
~ ~--~ --~r----
'...
""
\
\
\
\
0
"
,
\
1\
\
DfYIC[ UMIT-SUIES
UI.N-2tIOCIA & ULN-282(lA
z
~
1\
\\
0
\
\
~,oo~---+-----r----t---~r---~~~d--3~t---~~---t--~.
3
8
~
MJM8£l OF OUTPUTS
\
o.,
~---+----+---~I~~;~~~SlY
I~~---+------I-----t---~r----+----~----t---~~~~~~d
20
..
100
,,
,
\
D
80
PER CENT DUTY CYCLE
\
D
'"
\.
\\
\
15D
AMBIENT TEMPERATURE IN OC
PEAK COLLECTOR CURRENT
AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS
ALLOWABLE AVERAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
4-56
Series ULN·2800A (Cont' d)
INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE
z
4
E
2. 0
5
..;/
Z
0
,.
~
5/ '"
",'"
""~
"I,\c.';;'. '" ...'"
",;''''
2,0
..-
"
§"
E
'J
u
",,,,~
~
14
16
18
20
22
24
26
INPUT VCLTAGE - VIN
Ol'l"
~o
I,D
0,5
..,....... i--""'"
~--
"
0
12
1.5
4
--'"
i--""'"
P I--'
... -' ...
-- --
\'1'~\CA;'
10
__
11
12
INPUT VOLTAGE - \!IN
A-97~7A
SERIES ULN-2802A
SERIES ULN·2804A
3,5 r--,--r---,--r--,---,
3.0 r----t---t----t---Lo~~--j
4
~
z
~
L5f--+--If--+--I""""'--+-.,.
~
1.0
2,0 f - - - + - - t
'7I~~<,«~~-j
z
f-~~-~~~~~~:~-~--r--~-~
G
0,5 t-~+--+-
i2
z
°2~.7G-~2~.5-~3~0--"'3~.5--74.70-~4~.5~~5.~O-~5~.5--6~.0
0~,,75-72,~0-~2~,5-~3.LO-~3~,5--4:-:,O
INPUT VOLTAGE - VIN
INPUT VOLTAGE - \!IN
SERIES ULN·2803A
SERIES ULN·2805A
4-57
D
Series UlN·2800A (Cont' d)
+Vss
+2YJV
ULN-2822A
lOOK
PMOS
OUTPUT
+82V
TIL
OUTPUT
()WG. NO. A-IO,363
DWG. NO. A-IO,362
OFF VOLTAGE BIAS FOR
HIGH·VOLTAGE LOADS
TTL TO LOAD
ULN-2804A
ULN·2813A
+Vee
+V
Rp
DWG. NO.
A-IO,38~
TIL
OUTPUT
OUTPUT
USE OF PULL·UP RESISTORS
BUFFER FOR HIGHER CURRENT LOADS
TO INCREASE DRIVE CURRENT
4-58
Series UlN·2800A (Cont' d)
TYPICAL DISPLAY INTERFACE
?
DIGIT DRIVER,
1/2 ULN-206IM or
1/4 ULN-2074/768 or
1/8 UDN-2981/82A
,
,
T
T
7-SEGMENT DISPLAY
T
J
T
;~
WITH DECIMAL POINT,
COMMON-ANODE LED or
~>
HOT-WIRE READOUT
TO OTHER
DIGITS
SEGMENT DRIVER,
SERIES ULN-2800A or
SERIES ULN-2810A
DWG. NO. A-IO, 378
4-59
D
SERIES ULS-2800Hand ULS-2800R
SERIES ULS·2800H and ULS·2800R
HIGH·VOLTAGE, HIGH·CURRENT
DARLINGTON TRANSISTOR ARRAYS
FEATURES
•
•
•
•
•
•
•
TIL, DTL, PMOS, or CMOS Compatible Inputs
Peak Output Current to 600 rnA
Transient Protected Outputs
Side-Brazed Hermetic Package, or
Cer-DiP Package
High-Reliability Screening Available
Wide Operating Temperature Ranges
DESIGNED for interfacing between low-level
logic circuitry and high-power loads, the Series
ULS-2800H and ULS-2800R arrays consist of eight
silicon NPN Darlington power drivers on a common
monolithic substrate. The choice of five input
characteristics, 2 output voltage ratings (50 or
95 V), 2 output current ratings (500 or 600 rnA),
and 2 package styles (suffix 'H' or 'R') allow the
circuit designer to select the optimum device for any
specific application.
The side-brazed, hermetically-sealed Series
ULS-2800H devices are rated for operation over the
temperature range of -55°C to + 125°C, recommending them for military and aerospace applications. The cer-DIP, industrial grade hermetic Series
ULS-2800R devices are rated for use over the
operating temperature range of -40°C to +85°C,
permitting their use in commercial and industrial
applications where severe environmental conditions
may be encountered.
The appropriate specific part number for use in
standard logic applications can be determined from
the Device Type Number Designation chart. Note
that the high-voltage devices. (BV CE~ 95 V) are
available in the Series ULS-2800H only. All units
feature open collector outputs and integral diodes
for inductive load transient suppression.
D~'G.
PlO. A·IO.322
environmental requirements of Military Standard
MIL-STD-883, Methods 5004 and 5005. Series
ULS-2800H arrays with high-reliability screening
are described on page 4-70.
Device Type Number Designation
VCElrMXI
ICIMAXI
=
=
General Purpose
PMOS, CMOS
14 - 25 V
PMOS
5V
TIL, CMOS
6 - 15 V
CMOS, PMOS
High Output
TIL
All Series ULS-2800H Darlington power drivers
are furnished in an l8-pin side-brazed dual in-fine
hermetic package which meets the processing and
50 V
500 rnA
50 V
600 rnA
Type Number
95 V
500 rnA
ULS-2801*
ULS-2811*
ULS-2821H
ULS-2802*
ULS-2812*
ULS-2822H
ULS-2803*
ULS-2813*
ULS-2823H
ULS-2804 *
ULS-2814 *
ULS-2824H
ULS-2805*
ULS-2815*
ULS-2825H
'Complete part number includes a final letter to indicate package. H = hermetic
dual in-line, R = ceramic dual in-line.
4-60
SERIES ULS-2800H and ULS-2800R (Cont'd)
ABSOLUTE MAXIMUM RATINGS
Output Voltage, VeE (Series UlS-2800, 10*) ............................. 50 V
(Series UlS-2820H) ................................ 9S V
Input Voltage, V,N (Series UlS-2802,03, 04 *) ............................ 30 V
(Series UlS-280S*) .................................. IS V
Peak Output Current, louT (Series UlS-2800*, 20H) ...................... SOD mA
(Series UlS-281O*) .......................... 600 mA
Ground Terminal Current, IGND ...... , ................................ 3.0 A
Continuous Input Current, liN' : ..................................... 2S mA
Power Dissipation, PD(one Darlington pair) ............................. 1.0 W
(total package) ....,................. . See Graph, p 4-67
Operating Temperature Range, TA ('H' package) ................ -SsoC to +125°C
('R' package) . . . . . . . . . . . . . . . .. -40°C to +85°C
Storage Temperature Range, Ts ........................... -6SOC to + ISO°C
PARTIAL SCHEMATICS
.--*--0 COM
7V
10. 5K
,,
I
I
---'
OWG. No.
Series. ULS-2801*
(each driver)
1·<)650
Series ULS-2802*
(each driver)
Series ULS-2803*
(each driver)
r--~--oCOM
1. 05K
,
- --'
G.
Series ULS-2804*
(each driver)
Series ULS-280S*
(each driver)
'Complete part number includes a final letter to indicate package. H = hermetic dual in-line. R = ceramic dual in-line.
4-61
~o,
A-II).
n~
SERIES ULS-2800H·and ULS~2800R (Cont'd)
SERIES ULS·2800H and ULS·2800R
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Output Leakage Current
Collector-Emitter
Saturation Voltage
Sy_mbol
Icu
VCElSAn
Input Current
I'NION)
Input Voltage
liN/om
VIN/ON)
Applicable
Devices
All
ULS-2802*
ULS-2804*
All
ULS-2802*
ULS-2803*
ULS-2804*
ULS-2805*
All
ULS-2802*
ULS-2803*
ULS-2804*
ULS-2805*
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode Leakage
Current
Clamp Diode Forward
Voltage
hFE
CIN
tPlH
tPlil
IR
ULS-2801*
All
All
All
All
Test Conditions
Temp
.
VCE - 50V
VCE - 50 V, Y'N - 6 V
VCE = 50 V, V'N = 1V
Min.
Ic = 350 rnA, 18 = 850/-LA
Ic = 200 rnA, = 550/-LA
Ic - 100 rnA, '8 - 350 /-LA
+25°C' . Ic = 350 rnA, =500/-LA
Ic = .200 rnA, = 350/-LA
Ic = 100 rnA, - 250/-LA
Max.
Ic = 350 rnA, - 500/-LA
Ic = 200 rnA, = 350/-LA
I" = 100 rnA, I. = 250 /.LA
Y'N = 17 V
Y'N = 3.85 V
VIN =5v
Y'N - 12 V
VIN = 3 V
Max.
Ic = 500/-LA
Min.
VCE - 2 V, Ic - 300 rnA
Max.
VeE = 2V, Ic = 300 rnA
Min.
VCE - 2 V, Ic - 200 rnA
. VCE = 2 V, Ic = 250 rnA
VCE - 2 V, Ic - 30u rnA
Max.
VCE - 2 V, Ic - 200 rnA
VCE = 2 V, Ic = 250 rnA
VCE = 2 V, Ic = 300 rnA
Min.
VCE = 2 V, Ic = 125 rnA
VCE = 2 V, Ic = 200 rnA
VCE = 2 V, Ic = 275 rnA
VCE = 2 V, Ic = 350 rnA
Max.
VCE = 2 V,le = 125 rnA
VCE = 2 V, Ic = 200 rnA
VCE - 2 V, Ic - 275 rnA
VCE = 2 V, Ic = 350 rnA
Min.
VCE - 2 V, I, - 350 rnA
Max.
VCE - 2 V, Ic - 350 rnA
Min.
VCE = 2 V, I, = 350 rnA
+25°C VCE = 2 V, Ie = 350 rnA
+25°l:
0.5 Ein to 0.5 Eut
+25°C
+25°C
0.5 [in to 0.5 E,ut
VR- 50 V
Fig. Min.
1A -
IS
IS
2
2
2
2
2
2
2
2
2
3
3
3
3
3
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
-
-
~
-
-
-
575
675
250
750
1150
25
-
-
-
-
-
-
-
500
1000
-
6
-
7
~
Limits
Typ.
Max.
lOU
500
500
1.6
1.8
1.3
1.5
1.1
1.3
1.25
1.6
1.1
1.3
0.9
1.1
1.8
1.6
1.3
1.5
1.3
1.1
850
1300
930
1350
350
500
1000
1450
1500
2400
50
18
13
3.3
3.6
-
-
Units
/-LA
/-LA
/-LA
V
V
V
V
V
V
V
V
V
/-LA
/-LA
/-LA
/-LA
/-LA
/-LA
V
V
V
V
J.~
V
2.4
Z.7
3.0
6.0
8.0
10
12
5.0
6.0
7.u
8.0
J.U
2.4
V
V
V
V
V
V
V
V
V
-
-
10
l!l
pt
2!lU
250
lUUU
1000
50
ns
ns
/-LA
2.0
V
~.
-
-
'-C
-
V
V
V
V
.. '
VF
All
IF = 350 rnA
'Complete part number includes a final letter to indicate package. H= hermetic dual in-line, R = cerami.c dua.1 in-line.
Note 1: All limits stated apply to the complete Da~ington series except as specified for a single device type.
Note 2: The IINIOF~ current limit guarantees against partial tum-on of the output.
Note 3: The VINION) voltage limH guarantees a minimum output sink current per the specified teSt conditions.
4-62
1.7
SERIES ULS-2800H and ULS-2800R (Cont'd)
SERIES ULS·281 OH and ULS·281 OR
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Output Leakage Current
Symbol
1m
Collector-Emitter
Saturation Voltage
VCElSAT)
Applicable
Devices
All
ULS-2812*
ULS-2814 *
All
Test Conditions
Temp
Min.
+2SoC
Max.
Input Current
Input Voltage
IINION)
IINlom
VINION)
ULS-2812*
ULS-2813*
ULS-2814 *
ULS-281S*
All
ULS-2812*
ULS-2813*
Max.
Min.
Max.
Min.
Max.
ULS-2814 •
Min.
Max.
ULS-281S*
Min.
Max.
D-C Forward Current
Transfer Ratio
Input Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode Leakage
Current
Clamp Diode Forward
Voltage
hFE
CIN
tpLH
ULS-28 11 *
IR
All
All
All
All
VF
All
IPHL
Min.
+2SoC
+25°C
+25°C
+2SoC
VCE - SO V
VCE - SOY, VIN - 6V
~rL = SO V, ~ = 1 V
Ic - SOO rnA, 18 - 1100/LA
Ic - 3S0 rnA, 18 - ~O/LA
Ic - 200 rnA, 18 - 550/LA
Ic = sao rnA, 18 = 600/LA
Ie - 3S0 rnA, 18 - SOO/LA
Ic - 200 rnA, 18 - 3bU/LA
Ic - SOO rnA, 18 - 600/LA
Ic - 3S0 rnA, 18 - !JUO /LA
Ic - 200 rnA, 18 - 3!JU /LA
VIN = 17 V
VIN - 3.8S V
VIN - S V
-"-IN - ~2-"VIN - 3 V
Ic = SOO /LA
VCE - 2 V, Ie - SOO rnA
VCE -:- 2 V, Ic - !lOO rnA
VeE - 2 V, Ic - 2S0 rnA
VCE -.2 V, Ic - 300 rnA
VCE - 2 V, Ic - SOO rnA
VCE - 2 V, Ic - 2S0 rnA
VCE - 2 V, Ic - 300 rnA
VCE - 2 V, Ic - SOO rnA
VCE = 2 V, Ie - 275 rnA
VCE - 2 V, Ic - 3S0 rnA
VCE - 2 V, Ic - SOO rnA
VCE = 2 V, Ic = 27S rnA
VCE - 2 V, Ic - 3S0 rnA
VCE = 2 V, Ic - SOO rnA
VCE - 2 V, Ic - 3S0 rnA
VCE - 2 V, Ic - 500 rnA
VCE - 2 V, Ic - 350 rnA
VCE - 2 V, Ic - SOD rnA
VCE = 2 V, Ic - 500 rnA
VCE = 2V, Ic - SOO rnA
O.S Ei• to 0.5 E.ouL
O.S Ein 10 O.S [out
VR - SO V
IF = 3S0 rnA
IF - SOO rnA
Fig.
1A
1B
IB
2
2
2
2
2
2
2
2
2
3
3
3
Jl.
-
-
-
S7S
67S
2S0
~
Limits
Typ.
1.8
1.6
1.3
1.7
1.2S
1.1
1.8
1.6
1.3
8S0
930
3S0
1000
lS00
SO
3
4
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
2
2
1150
2S
4S0
900
-
-
-
IS
2S0
2S0
6
-
-
7
7
-
-
'Complete part number includes a final letter to indicate package. H = hermetic dual in-line, R = ceramic dual in-line.
Note I: All limits stated apply to the complete Darlington series except as specified for a single device type.
Note 2: The IINlom current limit guarantees against partial turn-on of the output.
Note 3: The VINION) voltage limit guarantees a minimum output sink current per the specified test conditions.
4-63
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.7
Max.
100
SOO
SOO
2.1
1.8
1.S
1.9
1.6
1.3
2.1
1.8
1.S
l300
13S0
500
14S0
2400
23.S
17
3.6
3.9
6.0
2.7
3~
3.S
10
12
17
7.0
8.0
9.S
3.0
3.5
2.4
2.6
Units
/LA
/LA
..E:..A
V
V
V
V
V
V
V
V
V
/LA
/LA
/LA
/LA
/LA
/LA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
-
-
-
-
-
2S
1000
1000
50
pF
ns
os
/LA
2.0
2.S
V
V
D
SERIES ULS-2800H and ULS-2800R (Cont'd)
SERIES ULS·2820H
ELECTRICAL CHARACTERISTICS: (over operating temperature range unless otherwise noted)
Characteristic
Output leakage Current
Collector-Emitter
Satu ration Voltage
Symbol
1m
VeE(SAl)
Applicable
Devices
All
UlS-2822H
UlS-2824H
All
Test Conditions
Temp
Min.
+25°C
Max.
Input Current
Input Voltage
IIN(ONI
liN OFF
VIN(ONI
UlS-2822H
UlS-2823H
UlS-2824H
UlS-2825H
All
UlS-2822H
Ul:i-28z::sH
Max.
Min.
Max.
Mm.
Max.
UlS-2824H
Min.
Max.
ULS-2825H
D-C Forward Current
Transfer Ratio
Input Capacitance
Iurn-un uelay
Turn-Otf Delay
Clamp Diode leakage
Current
Cia mp Diode Forwa rd
Voltage
hFE
UlS-2821H
CIN
t plH
tPHl
IR
All
All
All
All
VF
All
Min.
Max.
Min.
+25°C
+25°C
+25°C
+25°C
VeE = 95 V
VeE = 95 V, VIN = 6 V
VeE - 95 V, VIN -- 1 V
Ie = 350 mA, Is = 850 fl-A
Ie = 200 mA, Is = 550 fl-A
Ie = 100 mA, 18 = 350 fl-A
Ie = 350 mA, 18 = 500 fl-A
h - 200 mA, IJi - 350p.A
Ie = 100 mA, 18 = 250 fl-A
Ie = 350 mA, 18 = 500 fl-A
Ie = 200 mA, 18 = 350 fl-A
Ie = 100 mA, 18 = 250 fl-A
VIN -17V
VIN - 3.85 V
VIN = 5 V
VIN = 12 V
VIN - 3V
Ie - 500 fl-A
VCE - 2 V, Ie - 300 mA
VCE = 2 V, Ic = 300 mA
VeE - 2 V, Ie - 200 mA
VeE = 2 V, Ic = 250 mA
VeE = 2 V, Ie = 300 mA
VeE - 2 V, Ie - 200 mA
VeE = 2 V, Ie = 250 mA
VCE = 2 V, Ie = 300 mA
VeE = 2 V, Ie = 125 mA
VeE - 2 V, Ie - 200 mA
VeE - 2 V, Ie - 275 mA
VCE = 2 V, Ic = 350 mA
VeE - 2 V, Ie - 125 mA
VeE - 2 V, Ie - 200 mA
VCE = 2 V, Ie = 275 mA
VeE - 2 V, Ie - 350 mA
VeE = 2 V, Ie = 350 mA
VeE - 2 V, Ie - ::s50 mA
VeE - 2 V, Ic - 350 rilA
VCE = 2 V, Ie = 350 mA
0.5 Ein to 0.5 Eout
0.5 Ein to 0.5 Eout
VR - 95 V
If = 350 mA
Note 1: All limits stated apply to the complete Darlington series except as specified for a single device type.
Note 2: The IIN(OF~ current limit guarantees against partial turn-on of the output.
Note 3: The VIN(ONI voltage limit guarantees a minimum output sink current per the specified test conditions.
4-64
Fig.
1A
18
18
2
2
2
2
2
2
2
2
2
3
3
3
3
3
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
Min.
Limits
Typ.
-
-
-
-
-
1.6
-
1.3
1.1
-
575
675
250
750
1150
25
-
-
500
1000
-
1.25
1.1
0.9
1.6
1.3
1.1
850
930
350
1000
1500
50
-
-
-
-
-
-
-
-
15
250
250
6
-
-
7
-
1.7
-
Max.
100
500
500
1.8
1.5
1.3
1.6
1.3
1.1
1.8
1.5
1.3
1300
1350
500
1450
2400
18
13
3.3
3.6
3.9
2.4
2.7
3.0
6.0
8.0
10
12
5.0
6.0
7.0
8.0
3.0
2.4
Units
fl-A
fl-A
/J-A
V
V
V
V
V
V
V
V
V
fl-A
fl-A
fl-A
fl-A
fl-A
fl-A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
-
-
-
-
25
1000
1000
50
pF
ns
ns
fl-A
2.0
V
SERIES ULS-2800H and ULS-2800R (Cont'd)
TEST FIGURES
OPEN
VeE
OPEN
VeE
OPEN
FIGURE 1A
FIGURE 1B
OPEN
OPEN
;»---<~--Cl
OPEN
IlWG. 110. A·i732
OW;;. 110
__ 9731
FIGURE 2
OPEN
II
FIGURE 3
VeE
OPEN
FIGURE 4
FIGURES
V,
'F
OPEN
FIGURE 7
FIGURE 6
4-65
SERIES. ULS~2800H and ULS-2800R (Cont'd)
SERIES ULS·2800H
600
o~
o~
~
~
3::;
3::;
:::>
v:::>
v
2200[~:l~~t:::I:~~~:r:::l~~~~t§~~~~
~
a
NUMBER OF OUTPUTS
CONDUCTING
o SIMULTANEOUSLY
v
~
-
40
60
PER CENT DUTY CYCLE
20
eo
OWG.
100
~O.
NUMBER OF OUTPUTS
CONDUCTING
0 SIMULTANEOUSLY
o
20
r--T""-,---,.----.---,r--r--,...---r---.---,
80
100
OWG. 110. 1.-10,876
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT +75"C
PEAK COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS AT +5O'C
v 600
40
60
PER CENT DUTY CYCLE
4-10.875
'g
o~
~
~
600
~TT~-r4--~~-+-~r--+--+--~--+-~
..
E
~ 400
3::;
a
g200 1--+-,~..p.~-.I,-"''''''c--1i''''-_.I---I---I--\---==!
av
~
~
~200r_-t_-4_~~~~~~~~~~~--~=-4_-~
~
~
a
~
.
',.
,. "'.
-"1r~~ '00
"'.;. ~
'~
j!~ ~O
"
0
,
o
o
0,5
.."
'~':'r-,:,'r"
~'r"
.,'~ 4V
1,5
SATURATION VOLTAGE - VCE (SAD
OWG. NO. A-9754B
COLLECTOR CURRENT
AS A FUNCTION OF SATURATION VOLTAGE
'Complete part number includes a final letter to indicate package. H ~ hermetic dual in-line, R ~ ceramiC dual in-line.
4-68
-
SERIES ULS-2800H and ULS-2800R (Cont'd)
INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE
2.5 ;-----,---,---,_--,,---,_--,_--,_---,
2.0/----j---j---j---I-I---+---b"""--+---l
2.0 ,--,_--,,--~,_--;---r:;;...--;--_,
I.5/-----/---j'----j---If-ooo"""--+---+---,.....F--l
°2~.0~-~2.~5-~~J.O~-~J~5--~--~--75.~0--~5~.5--~'.·0
INPUT VOLTAGE - Y,N
SERIES ULS-2802
SERIES ULS-2803
Z 2.5 t----+--+---\j~'M:\\'.,.....--/
2·Or--,---,---.,--,-.,---.,---.,---,
«
E 2.0
~
/---+---/
~ 1.51-_+-~M~~~~~'8j£:..-l
OJ
u
~
1.0
I---f-~~;\'.!l~t---+--i
0.5/--.:.".':Ioo""'-_/--_
OL-__
0~5-'-~--~---+---+--"*0---rr,,---,j12
1.5
INPUT VOLTAGE - Y'N
~
2.0
__
~
2.5
__-L__-L__- J
3.0
3.5
4.0
If'-lPUT VOLTAGE - V 1N
DW(',.
SERIES ULS-2804
SERIES ULS-280S
4-69
~o
A_
IO.87~
II
SERIES ULS-2800H and ULS-2800R (Cont'd)
H ERMETICALLY ·SEALED
DARLINGTON TRANSISTOR ARRAYS WITH MIL·STD·883
HIGH.RELIABILITY SCREENING
Hermetically-sealed Darlington arrays with high-reliability screening can be ordered by adding the suffix
"MIL" to the part number, for example, ULS-2801H-MIL. If marking with the customers part number is
necessary in place of the Sprague Electric part number; this must be stated on the purchase order with the
marking desired.
Table I - 100% Production Screen Tests (All Hermetic Parts)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.1 thru 3.1.6
Mll-STD-883
Test Method
Screen
Internal Visua I
Stabilization Bake
Thermal Shock
Constant Acceleration
Fine Seal
Gross Seal
Electrical
Marking
2010,
1008,
1011,
2001,
1014,
1014,
Condo
Condo
Condo
Condo
Condo
Condo
Conditions
B
C
A
E
A
C
150°C, 24 Hours
100°C, 15 Cycles
30,000 G's, Y1 Plane
5 x 10') Maximum
oto
Per specification
Sprague or customer part number, date code, lot
identification, index point
Table II - 100% High-Reliability Screening ("MIL" Suffix Parts Only)
MIL-STD-883, Method 5004, Class B, Paragraphs 3.1.8, 3.1.9, 3.1.12 & 3.1.14
MIL-STD-883
Test Method
Screen
Interim Electrical
Burn-In
Static Electrical
Dynamic & Functional Electrical
Fine Seal
Gross Seal
External Visual
Table III -
Gp A,
Condo
Gp A,
Gp A,
Gp A,
Condo
Condo
Subgp
A
Subgp
Subgp
Subgp
A
C
1
25°C per specification
125°C, 160 Hours
1
25°C per specification
2&3
-SSOC & + 125°C per specification
4, 7 & 925°C per specification
5 x 10') Maximum
High-Reliability Qualification and Quality Conformance Inspection
MIL-STD-883, Method 5004, Class B, Paragraph 3.1.17
Mll-STD-883
Test Method
Test
Group
Group
Group
Group
5005,
1015,
5005,
5005,
5005,
1014,
1014,
2009
Conditions
A Subgp. 1-4, 7 & 9
B
C
D
5005,
5005,
5005,
5005,
Table
Table
Table
Table
Description
I
II
III
IV
Each production lot
Each production lot
End points, Gp. A, Subgp. 1, every 90 days
End points, Gp. A, Subgp. 1, every 6 months
4-70
Series UDN-28408
TYPE UDN-2841 B thru UDN-2846B
QUAD 1.5 AMPERE DRIVERS
FEATURES
• Inputs Compatible with DTL/TTL/LS TTL!
CMOS/PMOS
• High Voltage Output: -50 V
• High Current Gain
• Sink from Negative Supply: UDN-284IB/UDN-2842B
• Source to Negative Supply:UDN-2843B/UDN-2844B
• Sink & Source Combination: UDN-2845B/UDN-2846B
THIS SERIES of quad Darlington based switches is
especially designed for high-current, high-voltage
peripheral driver applications. It is intended to provide solutions to interface problems involving electronic discharge printers. doc motor drive (bipolar or
unipolar). telephone relays. PIN diodes, LEDs. and
other high-current loads operating from negative supplies.
UDN·2841B, UDN·2842B,
UDN.2845B, UDN.2846B
D
Types UDN-284! Band UDN-2842B are intended
for sinking applications.in which the load is connected
to ground and the I.e. device switches the negative
supply. The input PNP transistor in each driver serves as a level translator and the first NPN stage
provides sufficient current gain to· drive the output
Darlingtons.
Type UDN~2843B and UDN-2844B quad drivers
are primarily intended for switching the ground end
of loads which utilize negative supply voltages. The
NPN Darlington emitter follower outputs are pperated
as emitter followers in this application.
UDN-2843B, UDN·2844B
Type UDN-2845B and UDN-2846B devices are
sink-and-source combinations in a single dual in-line
package. Either device can .be used for bipolar switching applications in which both ends of the load are
.
floating. "
2844B, UON-2845B, and UON-2846B feature ahigher
input impedance and are intended for use with 8 V to
15 V PMOSand CMOS logic.
The UDN-2841 B, UDN-2843B, and UDN-28456
I.C.s are intended for use with 5 V TTL, Schottky
TTL. DTL, and CMOS logic. The UDNc2842B, UON,
All types. reduce component count. lower system
cost, reduce circuit and board complexity, and provide
solutions. for many interface requirements.
DWG. NO. A-!O,i!85
4-71
Series UDN~2840B(Cont' d)
SCHEMATIC (each driver)
Type Number
v,
UDN-2841B
UDN-2842B
UDN-2843B
UDN-2844B
UDN-2845B
UDN-2846B
.,,---t--o C
,:
RIN
!
SUB
10K
7.2K
Resistor Values in k n
Amplifier 1 &3
~mplifier 2 &4
RIN
Rs
RIN
Rs
3.3
10.5
3.3
10.5
3.3
10.5
15
15
1
1
15
15
3.3
10.5
3.3
10.5
3.3
10.5
NOTE: The substrate terminals must be tied to the most negative point
in the external circuit to maintain isolation between transistors and to
provide for normal device operation.
3K
ABSOLUTE MAXIMUM RATINGS at +25°C
Free-Air Temperature for anyone Darlington
Output (unless otherwise noted)
.. 50 V
Output Voltage, VCE(OFF) ...
.35 V
Output Sustaining Voltage, VCE(SUS).
. -50V
Substrate Voltage, VSUB ...
. .. 1.75 A
'Continuous Output Current, lOUT.
. See Table
Supply Voltage, Vs ..
. .. See Table
I nput Voltage, V.N....
..2.25 W*
Power Dissipation, PD (one output) ....
. ... 2.77 W*
(total package) ..
Operating Temperature Range, TA ..
. ... O°C to +7aoC
. -55°C to + 150°C
Storage Temperature Range, Ts ...
'Derate linearly to 0 W at +150°C.
Type Number
UDN-2841B
UDN-2842B
UDN-2843B
UDN-2844B
UDN-2845B
UDN-2846B
VdMax.)
V1N( Max.)
10 V
15 V
lOV
15 V
10 V
10 V
lOV
15V
10 V
15 V
10V
15V
15
15
1
1
1
1
Application
TTL, DTl, 5 V CMOS; current sink
8-15 V PMOS & CMOS; current sink
. TT.l, DTl, 5 V CMOS; current source
. 8-15 V PMOS & CMOS; current source
TTL, DTl, 5 V CMOS ; source & sink
8-15 V PMOS & CMOS; source & sink
)i
-v
-v
Current Sink
4-72
~
Current Source
Series UDN·2840B (Cont'd)
ELECTRICAL CHARACTERISTICS at TA = 25°C (unless otherwise noted),
See Applicable Test Figure for Conditions not Specified
Characteristic
Output Leakage
CUrrent
Output Sustaining
Voltage
Output Satu ration
Voltage
Test Conditions
Symbol
VEE = -50 V, VIN = OA V, TA = 25°C
VEE = -50V, VIN = OAV, TA = 70°C
VEE = -50 V, VIN = OA V, louT = 100 mA
IcEx
VCEISUSI
louT = 500 mA
louT = 1.0 A (Note 1)
lOUT = 1.5 A (Note 1)
lOUT = 500 mA, UON-2841/43,f45!3
lOUT = 500 mA, UDN-2842/44i/46B
lOUT = 1.5 A, UDN-2841/43/45B
lOUT = 1.5 A, UDN-2842/44/46B
lOUT = 500 mA, UDN-2841/42B, UDN-2845/46B (Note 2)
lOUT = 500 mA, UDN-2843/44B, UDN-2845/46B (Note 3)
Rl = 39r!, 0.5 VIN to 0.5 VOUT
Rl = 39r!, 0.5 VIN to 0.5 VOUT
VCEISATI
Input Current
IIN\ONI
Input Voltage
(Note 1)
Supply Current
(Note 1)
Turn-On Delay
Turn-Off Delay
VINIONI
Min.
Is
IpdION)
tpdloFFI
NOTES:
1. Each driver tested separately.
2. Drivers 1 & 3 (sink drivers) only.
3.
5.0
4.0
3.0
«
~
'"
w
2.0
~
1.0 t---+--~I--+----t~-":;t---I
o
Limits
Max.
-
-
-
-
35
50
-
-
-
1.1
-
-
1.4
1.7
500
525
2.4
5.0
3.75
7.5
2.0
50
-
-
300
350
2.5
3.25
-
100
500
Units
p.A
p.A
V
V
V
V
p.A
p.A
V
V
mA
mA
p's
,us
II
Drivers 2 & 4 (source drivers) only.
~
Typ.
~_-L_~~__~_~____L-_~
o
50
100
TEMPERATURE (0C)
4-73
OWG. NO.
A-IO.'I88A
Series UDN·2840B (Cont'd)
VEE'" -40V
VEE'" -40V
VIN '" +2.4Y (UDN-284IB) or +5.0V (UDN-28428)
DWIJ. MO.
Y1N
=:
+2.4V (UDN-2843tl) or +S.OV (UDN-2844B)
~·IO. ~87·
DIIG. MO.
TYPE UDN-2841B and UDN-2842B TEST CIRCUIT
A-IO,'I86A
TYPE UDN-2843B and UDN-2844B TEST CIRCUIT
VEE = -4QV
YIN -'- t-2.4V (UDN-2845B) or ..-5.QV (UDN-2846B)
DWG. itO. A-10,
~8~
TYPE UDN-2845B and UDN-2846B TEST CIRCUIT
4-74
Series UDN-2840B (Cont'd)
1.5r-----------~_,--,.------~~~--------------_r----~--------,_------------__,
u
o~
~1.0r--------------1------~~-----+~~----------~~~----------;-------------~
«
:c
~
::>
u
~
~
3 0"5 f--------------j---
°O~-------------t20~-------------4~O--------------760~-------------t80~----------~IOO".
PER CENT DUTY CYCLE
hO. A-IO.583
1.5r-------------r_----~----~r_----------~r_----------_,r_----------_,
u
~
~ 1.0
~
:l'«
:c
z~
3
NUMBER OF OUTPUTS
CONDUCTING
SIMULTANEOUSLY WITH
~ O.5f--------------j------~S~TA~V~E~R~V~-7~H~EA~T~S~IN~K~.--------t_--------------t--------------1
::>
o
0~O--------------~20~------------,~~-------------,6~0--------------~8~O------------~I~OO
PER CENT DUTY CYCLE
4-75
NO. A-10.
~BU
II
Series UDN·2840B (Cont'd)
TYPICAL alPOLAR MOTOR DRIVE APPLICATION
UDN-2845/468
1----+--oIN A
IN
Ao--+----I
1----+--0",
I---+~IN'
IN ,
o---t------I-LJ---,
DII'.I.
"0.
A 10.586
TYPICAL ELECTROSENSITIVE PRINTER APPLICATION
L.:.::... .,--,-IN
4
INI~--W
~..r-r---r~1 N 3
IN
2O---+-I--L!.J---,
-40V
4-76
UDN·2956Aand UDN·2957A
TYPE UDN-2956A and UDN-2957A
HIGH-VOLTAGE, HIGH-CURRENT SOURCE DRIVERS
of five common collector NPN DarlC OMPRISED
ington output stages, the associated co~rrlOn base
PNP input stages, and a common "enable" stage,
Type UDN-2956A and UDN-2957A high-voltage,
high-cRrrent source drivers are used to switch the
ground end of loads which are directly connected to
a negative supply. Typical loads include telephone
relays, PIN diodes, and LEDs. Both deviceswill sust",in output OFF voltages of - 80 V and will source
currents to ~500 rnA per driver. Under normal operating conditions, these units will sustain load currents of "- 200 rnA on each of the five drivers simultaneously at ambient temperatures up to +70°C.
The Type UDN-2956A driver is intended for use
with MOS(PMOS or CMOS) logic input levels operating with supply voltages from 6 V to 16 V. The
Type UDN-2957A driver has appropriate input current limiting resistors for operation from TTL, Scho.ttkyTTL, DTL, and 5 V CMOS. With either device,
the input and enable levels must both be pulled towards the positive supply to activate the output load.
Integral transient suppression diodes allow these devices to be used with inductive loads without the need
for discrete diodes. .In order to maintain isolation between drivers, the substrate should be connected to
the most negative supply in any event. All input connections are on one side of the dual in-line package,
output connections on the other side to simplify
printed wiring board layout.
in-line packages conforming to JEDEC outline TO116 (MO-OOIAA). On special order, hermeticallysealed versions of these devices (with reduced package
power dissipation capability) can also be furnished.
ABSOLUTE MAXIMUM RATINGS at 25°C
Free.Air Temperature (reference pin 7)
Supply Voltage, VEE ........... , .................. -80 V
Input Voltage, VIN (UDN-2956A) ................... +20 V
(UDN-2957A) ................... +lDV
Output Current, louT ........................... -500 rnA
Power Dissipation, PD anyone driver ................ 1.0 W
(total package) ................ 2.0 W*
Operating Temperature Range, TA .•.•..•••... O°C to +70°C
Storage Temperature Range, Ts .......... -55°C to +150°C
The Type UDN-2956A and UDN-2957A high-voltage, high-current drivers are supplied in 14-leaddual 'I)erate at the rate of 16.67 mWrC above 25°C.
These devices are also available in industrial-grade hermetic
packages with reduced package power capability. To order,change
the last letter of the part number from 'A'to 'R'.
4-77
D
UDN·2956A andUDN·2957A(Cont'd)
ELECTRICAL CHARACTERISTICS at TA = +25°C,
Characteristic
Symbol
Applicable
Devices
Output Leakage Current
IcEx
UDN-2956A
Output Source Current
Test Conditions
Limit
ALL
VF
ALL
IF =
UDN-2956A
UDN-2957A
ALL
I,N(OFF)
UDN-2956A
louT
I'N(ON}
..
UDN-2957A
Clamp Diode
Leakage Current
Clamp Diode
Forward Voltage
(unless otherwise specified)
IR
VCE(SAT) UDN-2956A
UDN-2957A
Input Current
V ,N
Y'N = VENABLE=D.8 V, VOUT = -80. V, TA= +7DoC
Y'N = 0.8 V, VENABLE = 15 V, VOUT = -80 V, TA = +7DoC
Y'N = 15 V, VENABLE =0..8 V, VOUT = -80. V,TA== +7D oC
Y'N = VENABLE = U.4 V, VOUT = -8U V, TA = +7Uo C
Y'N = 0.4 V, VENABLE = 3.85 V, VOUT = -80. V, TA = +70°C
Y,N = 3_85 V, VENABLE = 0.4 V, VOUT = -80. V, TA = 7DoC
Y,N - b.U v, louT - IUU mA
Y'N = 7.0. V, louT = 175mA
Y'N = 10 V, louT = - 350. mA
Y'N - ZA v, louT - -100 mA
Y'N = 2.7 V, louT = -175mA
Y'N = 3.9 V, louT = -350 mA
Y'N = 15 V, Your = -2.0 V
Y'N = 3.85 V, VOUT = -2.0 V
louT - -5UU/lA, IA - +7U'C
Y'N = 5.0 V, VOUT = -2.0 V
Y'N = 6.0 V, VOUT = -2.0 V
Y'N = 7.0V, VOUT = -2.0V
Y'N = 8.0 V, VOUT = -2.0 V
Y'N = 9.0 V, VOUT = -2.0 V
Y'N = 2.4 V, VOUT = -2.0 V
Y'N = 2.7 V, VOUT =. -2.0 V
Y'N = 3.0 V, VOUT = -2.0 V
Y'N = 3.3 V, VOUT = -2.0. V
Y'N = 3.6 V, VOUT = -2.0 V
VR= 80 V
UDN-2957A
Collector-Emitter
Saturation Voltage
=
VENABLE
~50
ONE OF FIVE DRIVERS
r - R '" 10 ,5 kA for UDN-2956A
R '" 2.5 Ju,.. for UON-2957 A
.~
- - - --,
INPUT
I
I
I
UDN-2956A ONL\
ENABLE
2.4 K
OUTPUT
SUBSTRATE
Br-------t-----.!-~-----~-__+
L __________ -I
SUB
1lWG. "0. A-IO.211IS
4-78
-200/lA Max.
-200 /lA Max.
-2DO/lA Max.
-1.10. V Max.
-1.25 V Max.
-1.60. V Max.
-1.10 V Max.
-1.25 V Max.
-1.60 V Max_
1.85mA Max_
1.40mA Max.
5O/lAM.in.
-125 mA Min.
-200 mA Min .
-250 mA Min.
---:300 mA Min.
-350 mA Min.
-125.mA Min_
-200 mA Min_
-250 mAMin_
-300 mA Min_
-350 mA Min.
50/lA Max.
2.0 V Max.
mA
.
I
I
I
-200. /lA Max.
-200. /lA Max.
-200. /lA Max.
SERIES UDN·2980A
SERIES UDN-2980A
HIGH-VOLTAGE, HIGH-CURRENT SOURCE DRIVERS
RECOMMENDED for applications requiring
separate logic and load grounds, load supply voltages to +80 V, and/or load currents to 500 rnA,
Series UDN-2980A source drivers are used to interface between standard low-power digital logic and
relays, solenoids, stepping motors, LEDs, lamps, etc.
Under normal operating conditions, these devices
will sustain 100 rnA continuously on each of the eight
outputs at an ambient temperature of + 70°C and a
supply of + 15 V. All devices in this series incorporate input current limiting resistors and output
transient suppression diodes.
The Type UDN-2981A and UDN-2983A drivers
are for use with + 5 V logic systems - TTL,
Schottky TTL, DTL, and 5 V CMOS. The Type
UDN-2982A and UDN-2984A drivers are intended
for MOS interface (pMOS and CMOS) operating
from supply voltages of 6 to 16 V. The UDN-298IA
and UDN-2982A will sustain a maximum output
OFF voltage of + 50 V while the UDN-2983A and
UDN-2984A will sustain an output voltage of
+ 80 V. In all cases, the output is switched ON by an
active high input level.
ABSOLUTE MAXIMUM RATINGS
at 25°C Free-Air Temperature
The Series UDN-2980A high-voltage, high-current
source drivers are supplied in I8-lead dual in-line
plastic packages. They can also be supplied, with
reduced package power capability, in military-grade
hermetic packages to the processing and environmental requirements of Military Standard MIL-STD-883,
or industrial-grade dual in-line hermetic packages.
To order, change the last letter of the part number
from 'A' to 'H' or 'R', respectively.
Output Voltage, VeE (UDN·2981A &UDN·2982A) ..... +50 V
(UDN·2983A & UDN·2984A) ..... +80 V
Input Voltage, VIN (UDN·2981A & UDN·2983A) ..... +15 V
(UDN·2982A & UDN·2984A) ..... +30 V
Output Current, louT ........................'... -500 rnA
Power Dissipation, Po (anyone driver). '" ........... 1.1 W
(total package) .................. 2.2 W"
Operating Temperature Range, TA .••.•.••... O°C to +70°C
Storage Temperature Range, Ts .......... -55°C to +150°C
'Derate at the rate of 18 mWrC above 25°C.
4-79
II
SERIES UDN·2980A (Cont'd)
v,
ONE OF EIGHT DRIVERS
INPUT
3 K
OUTPUT
1,5 K
R '" 3.0 k.h. for UDN-298l/83A
R '" 8.5 Iu.... for UDN-2982/84A
Dl'!G.I(O. A-IO.242
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Symbol
Output Leakage Current
IcEx
Collector-Emitter
Saturation Voltage
VCE(SAT)
=
+25°C (unless otherwise specified)
Applicable
Devices
UDN-2981/82A
UDN-2983/84A
UDN-2981/83A
UDN-2982/84A
UDN-2981/83A
Input Current
i'N(ON)
UDN-2982/84A
Output Source Current
lOUT
Supply Current
(Outputs Open)
Is
Clamp Diode
Leakage Current
Clamp Diode
Forward Voltage
IR
VF
UDN-2981/83A
UDN-2982/84A
UDN-2981A
UDN-2982A
UDN-2983A
UDN-2984A
UDN-2981/82A
UDN-2983/84A
ALL
4-80
Test Conditions
Limit
VIN = 004 V, Vs = 50V, TA = +70°C
VIN = 004 V, Vs = 80 V, TA = +70°C
VIN = LA V, lOUT = -lOU mA
VIN = 204 V, louT = -225 mA
VIN = 204 V, louT = -350 mA
VIN = 5_0 V, lOUT = -100 mA
VIN = 5_0 V, lOUT = -225 mA
VIN = 5.0 V, lOUT = -350 mA
VIN = 2AV
V'N = 3.85 V
VIN - 5.0V
VIN = 12 V
VIN = 204 V, VCE = 2.0 V
VIN = 5.0 V, VCE = 2.0 V
VIN = 2.4 V (All Inputs), Vs = 50 V
VIN = 5.0 V (Ali Inputs), Vs = 50 V
VIN = 2.4 V (Ali Inputs), Vs - 80 V
VIN = 5.0 V (All Inputs), Vs = 80 V
VR = 50V,VIN = OV
VR = 80 V, VIN = OV
IF = 350 mA
200 JlA Max_
200 Jl A Max_
1.7 V Max_
L8V Max_
1.9 V Max_
1.7 V Max_
1.8 V Max_
1.9 V Max.
575 JlA Max.
L26mA Max.
680 JlA Max.
1.93 mA Max.
-350 mA Min_
-350 mA Min.
10 mA Max.
10 mA Max.
10 mA Max_
10 mA Max_
50 JlA Max.
50 JlA Max.
2_0 V Max_
SERIES TPP
SERIES TPP
MEDIUM·POWERDARLINGTON ARRAYS
In Dual In-Line Plastic Packages
SPRAGUE Series TPP devices are mediumpower Darlington arrays, consisting of 1, 2, 3
or 4 discrete Darlington chips in a single 14-pin
package. These devices complement Sprague's
Series TPQ quad transistor arrays.
mechanical protection during insertion into
printed wiring boards.
TYPICAL RATINGS (Max.)
All of these devices are furnished in the industry standard TO-116 (or MO-OOIAA) 14-lead
dual in-line plastic package.
The molded
package is identical to that used in most consumer integrated circuits and offers superior
Power Dissipation, Po (total package)................ 2 W·
Operating Temperature Range, TA•..••..• -55°C to +125°C
Storage Temperature Range, Ts .......... -65°C to +150°C
*Derate at the rate of 15 mW/oC above TA = +25°C
STANDARD RATINGS
Type Number
TPP·1000
Devices! Package
1
I
I
TPp·2000
2
Max. Total Power
Dissipation, Po
@25°C
I
TPP·3000
I
3
I
I
TPp·4000
4
2 Watts
BVCES@ 100 ~
BV CBO @100 ~
40 Volts
BV EBO @100 ~
12 Volts
50 Volts
ICBO @30 V
lOa nA
iEBo@IOV
100 nA
VCE @lA, ImA
1.5 Volts Max.
1.0 Volts Typ.
VBE @lA, ImA
2.0 Volts Max.
1.6 Volts Typ.
HFE @500 rnA, 5V
@I A, 5V
@2 A, 5V
2K Min.
Ic Max
4 Amps
Additionol information on these devices is available from Sprague
Electric Co., 70 Pembroke Rood, Concord, New Hampshire 03301,
Telephone 603·224·1961.
4-81
SERIES TPP
(Cont'd)
c
c
c
c
c
c
c
c
TPP·1ooo
TPP·2oo0
TPP·3000
4-82
TPP·4oo0
SERIES TPQ
SERIES TPQ QUAD TRANSISTOR ARRAYS
. In Dual In-Line Plastic Packages
THE SPRAGUE Series TPQ quad transistor arrays
TYPICAL RATINGS (Max.)
are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are Power Dissipation, PD
(each transistor) .............................. 500 mW
eight NPN types, five PNP types, and nine NPNjPNP
(total package) .............................. 1700 mW'"
dual complementary pairs.
All of these devices are furnished in the industry Operating Temperature
standard TO-l 16 (or MO-OOlAA) 14-1ead dual in-line
Range, TA ............................... O°C to +85°C
plastic package. The molded package is identical to Storage Temperature
that used in most consumer integrated circuits and
Range, Ts ........................... -S5°C to +150°C
offers superior mechanical protection during insertion
·Derate at the rate of 1.79 mWr C above TA = +55· C
into printed wiring boards.
STANDARD RATINGS
Type No.
BVCBO
V
Min.
BVCEO
V
Min.
BVeao
V
Min.
TPQ2221
TPQ2222
TPQ2483
TPQ2484
TPQ3724
TPQ3725
TPQ3725A
TPQ3904
60
60
SO
60
50
60
70
SO
40
40
40
40
30
40
50
40
5
5
S
S
5
5
5
S
TPQ290S
TPQ2907
TPQ3798
TPQ3799
TPQ390S
SO
SO
SO
60
40
40
40
40
SO
40
,5
5
5
5
5
TPQ6001
TPQ6002
TPQ6100
TPQ6100A
SO
SO
SO
60
30
30
40
45
5
5
5
5
TPQS501
TPQS502
TPQS600
TPQ6600A
TPQ6700
60
60
60
60
40
30
30
40
45
40
Figure 1
5
5
5
5
5
fT
leBo D-C Current Gain, hFE
Cob
Limits
MHz
pF
nA
@ Ic & VCE
Max. Min. Max. mA V Min. Max.
Four NPN Devices - Figure 1
40
150 10 200
50
8.0
150 10
8.0
50
100
200
20
100
0.1
50
S.O
5
0.1
50
S.O
20 200
5
35
500
100 1 250
8.0
200
1 250 10.0
500
35
100
500
40
100 1 200 10.0
4;0
75
10
1 250
50
Four PNP Devices - Figure 2
8.0
50
40
150 . 10 200
50
100
150 10 200
8.0
10 150
0.1
5
60
4.0
10 300
0.1
5
SO
4.0
1 200
4.5
10
.90 75
Two NPN/Two PNP Devices - Figure 3
30
40
150 10 200
8.0
100
150 10 200 8.0
30
10
75
1.0
5
50
4.0
1.0
5
50 4.0
10
150
Two NPN/Two PNP Devices - Figure 4
30
40
150 10 200
8.0
30
100
150 10 200
8.0
75
1.0
5
50
4.0
10
10
1.0
5
50 4.0
150
10'
i 200 4.5
50
70
Figur~ 3
Figure 2
VCE~T)
mV@ Ic
Max. mA
Similar
Devices
Discret~
400
400
350
350
450
450
450
200
150
150
1.0
1.0
500
500
500
10
2N2221
2N2222
2N2483
2N2484
2N3.724
2N3725
2N3725A
2N3904
400
400
250
250
250
150
150
1.0
1.0
ro
2N290S
2N2907
2N3798
2N3799
2N390G
400
400
250
250
150
150
1.0
1.0
2N2221/2N290S
2N2222/2N2907
2N2483/2N3798
2N2484/2N3799
400
400
250
250
250
150
150
1..0
1.0
10
2N222i!2N290S
2N2222/2N2907
2N2483/2N3798
2N2484/2N3799
2N3904/2N3906
Figure 4 '
Additional information on these devices is available from SpraguEi .electric Co., 70 Pembroke Road,
Concord, NH 03301. Telephone 603:224-1961.
4-83
Il
[)
MOS AND BIMOS CIRCUITS
Device Type
UCN-4103A
UCN-4105A
UCN-4112A and 4112M
UCN-4116M
UCN-4123M
UCN-4401A
UCN-4801A
UCN-4805A
UCN-4806A
UCN-4810A
UCN-4815A
Data
5-3
5-4
5-5
5-7
5-3
5-9
5-9
5-12
5-12
5-16
5-19
Device Type
Description
UCN-4103A
UCN-4105A
UCN-4112A/M
UCN-4l16A/M
UCN-4123M
UCN-4401A
UCN-4801A
UCN-4805A
UCN-4806A
UCN-4810A
UCN-4815A
Crystal Oscillator/Divider ( 3 x 214)
RC Oscillator/Divider (2 14 or 215)
Crystal Oscillator/Divider (2 16)
Crystal Oscillator/Divider (2 16)
Crystal Oscillator/Divider (3 x 214)
Latch/Driver (4 Sink Outputs at 500 rnA & 50 V)
Latch/Driver (8 Sink Outputs at 500 rnA &50 V)
Latch Decoder/Driver (8 Source Outputs at 40 rnA & 60 V)
Latch Decoder/Driver (8 Source Outputs at 40 rnA & 60 V)
Serial-to-Parallel Latch/Driver (10 Source Outputs at 40 rnA & 60 V)
Latched Driver (8 Source Outputs at 40 rnA & 60 V)
5-1
IJ
Operating and Handling Practices
for MOS Integrated Circuits
Handling Practices· Packaged Devices
Autamatlc Handling Equipment
Grounding alone may not be sufficient and feed
mechanisms should be insulated from the devices under test at the point where the devices are connected
to the test equipment. Ionized air blowers can be of
aide here and are available commercially. This
method is very effective in eliminating static electricity problems.
Sprague Electric incorporates input protection
diodes in all of its MOS/CMOS devices. Because of
the very high input resistance in MOS devices, the
following practices should be observed for protection
against high static electrical charges:
1. Device leads should be in contact with a conductive material except when being tested or in
actual operation.
2. Conductive parts of tools, fixtures, soldering
irons and handling equipment should be
grounded.
3. Devices should not be inserted into or removed
from test stations unless the power is off.
4. Neither should signals be applied to the inputs
while the device power supply is in an off condition.
Ambient Conditions
Dry weather with accompanying low humidity
tends to intensify the accumulation of static charges
on any surface. In this atmosphere, proper handling
procedures take on added importance. If necessary,
steam injectors can be procured commercially.
Alert Failure Modes
The common failure modes that appear when
static energy exists and when proper handling practices are not used are:
5. Unused input leads should be committed to
either VSS or VDD.
1. Shorted input protection diodes.
2. Shorted or 'blown' open gates.
3. Open metal runs.
Handling Practice, • Ole
. Simple diagnostic checks with curve tracers or
similar equipment readily identifies the above failure
modes.
A conductive carrier should be used in order to
avoid differences in voltage potential.
5-2
UCN·41 03A and UCN·4123M
UCN·4103A/23M OSCILLATOR/FREQUENCY DIVIDERS
FOR AUTOMOTIVE CLOCK APPLICA TIONS
FEATURES
• Buffered Outputs
• Plastic Dual In-Line Package
• Metal Gate lon-Implanted CMOS
• Internal 12V Regulator
SPECIFICALLY designed for use in automotive ose.
IN
applications, the UCN-4103AI23M CMOS circuits
consist of an oscillator inverter, a frequency divider,
and buffer amplifiers. Only a minimum number of
external components are needed for a complete
clock.
The buffered output of 60 or 64 Hz is suitable for
directly driving most clock motor assemblies. The
crystal frequency in these applications would be
2.949 MHz or 3.146 MHz, respectively.
On
special
order,
the
UCN-4123M
Oscillator/Frequency Divider is also available with
additional divider stages (+65,536 total) to allow
operation with crystal frequencies of 4.194 MHz or
3.932 MHz to produce the 64 Hz or 60 Hz outputs.
The Type UCN4103A Oscillator/Frequency
Divider is furnished in a standard 14-pin dual in-line
plastic 'A' package. The Type UCN-4123M is furnished in a standard 8-pin dual in-line plastic 'M'
package.
L.-+---ml Vss
DWG. MO. A--9719
TYPE UCN·4123M
"PE UCN·4103A
+5Vto+14V
'1
22M ....
47pF
NOM.
47pF
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Voo - Vss (UCN-4103A) ...... , ...... +15 V
VREG .........................See Note
Zener Current. IREG' ••••••• , ••••••••••••••••••• 15 mA
Operating Temperature Range, TA•••••••••• -'30°C to +80°C
Storage Temperature Range, Ts........... -55°C to + 125°C
TYPICAL APPLICATION
NOTE: The allowable VREG· is dependent on the value of an external current
limiting resistor and is+IO Vat 0 Q.
ELECTRICAL CHARACTERISTICS: Vss = 0 V, TA = 25°C
Characteristic
Supply Current
Zener Voltage
Output Source Current
Output Sink Current
Upper Frequency Response
Symbol
IAVG
VRr.G
IbUT
{source}
lOUT h;nkl
t,N
Test Conditions
Voo = lOV,t'N = 3, 145, .728Hz
IREG = lOOILA
Voo = 4V, VOUT = 3V
VOO = 4V, VOUT = IV
Voo = 4V
CAUTION: Sprague CMOS devices feature input static protection but are still susceptible to damage
when exposed to extremely high static electrical charges.
5-3
.. Min.
Limits
Max.
-
1.8
10
13
2
-2
3.146
Units
--
mA
V
rnA
rnA
--
MHz
-
II
UCN·410SA
TYPE UCN·4105A OSCILLATOR/FREQUENCY DIVIDER
FOR TIMER APPLICATIONS
FEATURES
•
•
•
•
Low Threshold, Metal Gate, lon·lmplanted CMOS
2V to 5V Operation
Buffered Outputs
Static Charge Protection
05C.
05C.
osc.
THE TYPE UCN-4105A is a low-threshold CMOS
circuit consisting of 3 oscillator inverters, a 15stage ripple counter; and associated control logic. In
normal operation, the 18.2Hz oscillator frequency is
divided by 214 or 215 to provide an output pulse every
15 or 30 minutes. By adjustment of the three external
components, other timing periods may be obtained.
This device is available in a 14-pin dual in-line
plastic 'A' package. On special order, devices for
operation at higher supply voltages are obtainable.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Voo -Vss
Operating Temperature Range, TA .
Storage Temperature Range, Ts ...
................ +5V
. ...... -30°C to +80°C
. ..... -55°C to + 125°C
ELECTRICAL CHARACTERISTICS: Vss = 0 V, TA = +25°C
Characteristic
Supply Current
Osc. Source Resistance
Output Current
--1
Test Conditions
Symbol
100
Rose
lOUT
(source)
Min.
Voo = 3.5V, No Load, fiN = 18.2Hz
Voo = 2V, V5 = 2V, Pin 3 or Pin 4
VOO = 2V, Your = 0.6V
Limits
Max.
-
250
10
1.0
-
-
Units
IJ.A
kfl
mA
+3.SV
f 1N/ 2 14
\--
~~T~TA~I~D:
--"1---"---,---,---.,- Voo
~~T~TAiPI~S:)
--,I,---------il------.- voo
vss
Vss
"+6TIN
r--
f1N/2 1S
-----1
+3.5V
o---Jj. I
Where T1N - Period off lN
OUT
TYPICAL WAVEFORM
TYPICAL APPLICATION (fiN:=: 18.2Hz)
5-4
UCN·4112
UCN-4112 OSCILLATOR/FREQUENCY DIVIDERS
FOR AUTOMOTIVE CLOCK APPLICATIONS
FEATURES
•
•
•
•
Metal Gate lon·lmplanted CMOS
Internal Zener Diode Regulator
Buffered Outputs
Plastic Dualln·Line Package
of an oscillator inverter, a frequency
CONSISTING
divider, buffer amplifiers, and two Zener diode
regulators, the Series UCN-4112 low-threshold CMOS
circuits are designed for synchronous motor applications. These devices are operable over a wide temperature range, over a wide supply voltage range, and
feature very low power consumption. All of these
features allow the Series UCN-4112 Oscillator/Frequency Dividers to be particularly suitable for use in
automotive applications.
1lWG. MO. A·IO.055
UCN-4112A
Complementary, low-impedance outputs of 48 Hz
with a crystal frequency of 3.146 MHz or 30 Hz with
a crystal frequency of 1.966 MHz can be used to directly drive most clock motor assemblies. Alternatively, crystal frequencies of 4.194 MHz or 3.932 MHz
can be used to produce output frequencies of 64 or
60 Hz, respectively.
The Type UCN-4112A Oscillator/Frequency Divider is furnished in a standard 14-pin dual in-line plastic
'A' package. The Type UCN-4112M is furnished in
a standard 8-pin dual in-line 'M' package. On special
order, these devices are also available in a 16-pin dual
in-line plastic package.
ELECTRICAL CHARACTERISTICS: Vss
Characteristic
Supply Current
Zener Voltage
Output Resistance
Upper Freq. Response
L~~;;;~;;;;MU
UCN-4112M
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Voo-Vss ........................ +15 V
Zener Current, IREG I or IREG 2 .................... 15 rnA
Operating Temperature Range, TA........ -30°C to +80°C
Storage Temperature Range, Ts ......... -55°C to +125°C
= 0 V, TA = 25°C
Symbol
Test Conditions
IAVG
Voo = 12 V, fiN = 3,145, 72B Hz
Voo = 6 V, fiN = 3,145, 728 Hz
Voo = 12 V, fiN = 1,966, OBO Hz
Voo = 6 V, fiN = 1,966, OBO Hz
IREG 1 =250 "A
IREG 2 = 2.5 rnA, ref. VREG I
Voo = 4 V, lOUT = 5.1 rnA
Voo = 3.BV
Voo = 3.5V
VREG I
VREG2
ROUT
fiN
OUT
esc.
DWG. NO. A·IO.057
5-5
Min.
-
Limits
Max.
-
2.E
1.1
1.B
0.75
5.0
5.1
-
-
Units
rnA
rnA
rnA
rnA
V
V
-
170
0
3.146
1.966
-
MHz
MHz
-
D
UCN·4112 (Conf'd)
RMIN '" VOD MAX - 10.1
0.015
OUT l
~
VDD
VSS
fOUT '" flN/65536
OUT2
lJL.JlJLJ
O~iG.
VDD
VSS
NO. A-IO.058
DIiIG. NO. A-IO.OS6
TYPICAL WAVEFORMS
TYPICAL APPLICATION
5-6
UCN·4116M
UCN-4116M OSCILLATOR/FREQUENCY DIVIDER
FOR AUTOMOTIVE CLOCK APPLICATIONS
FEATURES
•
•
•
•
Metal Gate lon-Implanted CMOS
Internal Zener Diode Regulator
Buffered Outputs
Plastic Dual In-Line Package
SPECIFICALLY DESIGNED for use in automotive
applications, the Type UCN-4116M oscillator/frequency divider will drive synchronous clock motors in
a push-pull configuration. The Zener diode regulator
serves the dual function of voltage regulation and protection from automotive electrical system transients,
spikes, and noise.
DWG. NO. 11.-10 .......
ABSOLUTE MAXIMUM RATINGS
The buffered output of 60 or 64 Hz is suitable for
directly driving most clock motor assemblies. The
crystal frequency in these applications would be 3.932
MHz. or .4.194 MHz, respectIvely. The oscillator/frequency divider will accommodate other quartz crystal
frequencies in the 2 to 10 MHz range for use in other
applications.
Supply Voltage, Voo - Vss ...
Zener Current, Iz .
Package Power Dissi pation, Po .
Operating Temperature Range, TA .
Storage Temperature Range, Ts.
Notes:
L Dependent on value of external current limiting resistor and is
12 V at 0 n.
2. Derate at the rate of 3.3 mWrC above TA = +25'C.
The Type UCN-41l6M oscillator/frequency divider
is supplied in a standard 8-pin "mini-DIP" dual inline plastic package.
ELECTRICAL CHARACTERISTICS: Vss
Characteristic
=
0 V, TA
=
+25°C
Symbol
Test Conditions
Supply Current
IAVG
Zener Voltage
Output Current
Upper Frequency Response
Vz
Voo = 12 V,fIN ·= 3,932,160 Hz.
Outputs Open-Circuited
Iz = lOO IlA
Voo - 10 V, VOUT = ±6.5V
Voo = 5 V
lOUT
fiN
. .... Note 1
. .15 rnA
..... 330 mW (Note 2)
. ... --30°C to +80°C
. .. -55°C to+ 125°C
Min.
Limits
Max.
!
5
rnA
15.5
V
mA
MHz
-
12.5
±20
3.932
I
Units
-
-
•••
CA UT/ON: Sprague CMOS devices feature input static protection but are still susceptible to damage when exposed to extremely high stalic electrical charges.
5-7
UCN·4116M (Cont'd)
r,
9
'"
8
TEST CIRCUIT
7
!---Vl/V'---Q 14-18V
6~
5
DWIl.NO ..... IO,1j1j.3
4~,
3
J1JLJLfL
VSS
fOUT = fIN/65S36
~
VOO
VSS
1
D'lKi.MO.A-IO,058
Typical Waveforms
0
10
'\ ~'",.
~
~.
~
1'\
\
->,.
'\
VOO
2
OUT2
"
~
~o.
TYPICAL APPLICATION
OUT l
~
TA = 2SoC
~
"\
\
~
\
\
"\
\
\ \
1 \
30
40
\ 50
OUTPUT CURRENT. lOUT IN mA
THE UCN-4123M OSCILLATOR/FREQUENCY DIVIDER IS SHOWN ON PAGE 5-3.
5-8
\
\
60
DWG.IIO.A-IQ,'>"1i
70
UCN-4401A and UCN·4801A
DUTY CYCLE
CONTROL
Voo
UCN-440 1 A and UCN-480 1 A
SiMOS LATCH/DRIVERS
FEATURES
DWG. NO. A-IO.499
TYPE UCN-4401 A
• High-Voltage, High-Current Outputs
•. Output Transient Protection
• CMOS, PMOS, NMOS, TTL Compatible inputs
• I nternal Pull-Down Resistors
• Low-Power CMOS Latches
DUTY CYCLE
CONTROL
Voo
TH ESE high-voltage. high-current latch/drivers are
OUT1
comprised of four or eight CMOS data latches. a
bipolar Darlington transistor driver for each latch.
and CMOS cbntrol circuitry for the common CLEAR.
STROBE. Hnd DUTY CYCLE CONTROL functions.
The bipolar/MOS combillationprovi(ksanextremely
low-power LHch with maximum interface flexibility.
The UCNA40lA containsfourlatch!drivcrs while the
UCN-4g0 I A contains eight latch/drivers.
OUT,
OUT3
OUT 4
OUT5
OUT6
The CMOS inputs are compatible with standard
CMOS. PMOS. and NMOS circuits. TTL or DTL
circuits may require the use of appropriate pull-up
resistors. The bipolar outputs are suitable for use
with relays. solenoid·s. stepping motors. LED or incandescent displays. and other. higli-power loads.
IN?
OUT?
IN.
OUTs
GROUND
COMMON
TYPE UCN-4801A
Both units feature open-collector outputs and integral diodes for inductive load transient suppression.
The output transistors are capable of sinking 500 mA
and will sustain at least 50 V in the OFF state. Because of limitations on package power dissipation. the
simultaneous operation of all drivers at maximum
rated current can only be accomplished by a reduction
in duty cycle. Outputs may be paralleled for higher
load current capability.
The UCN-440IA 4-latch device is furnished in a
standard 14-pill dual in-line plastic package. The
UCN-4~;o1 A 8-latch device is furnished in a 22-pin
dual in-line plastic package with lead centers on
0.400" (10.16 lilm) spacing. All outputs are pinned
opposite their respective inputs to simplify circuit
board layout.
DUTY
CYCLE
CONTROL
,
COMMON MOS CONTROL!
TYPICAL MOS LATCH
TYPICAL SrPOlAFI DRIVER
FUNCTIONAL BLOCK DIAGRAM
5-9
UCN·4401A and UCN·4801A (Confd)
ABSOLUTE MAXIMUM RATINGS
.................................. 50V
............ . ................... 18 V
...........
.. -0.3 V to Voo +0.3 V
.................................. 500 mA
Output Voltage, VCE
Supply Voltage, Voo
Input Voltage Range, V,N
Conttnuous collector Current, Ic.
Package Power Dissipation, Po (UCN-440IA).
. ........... , .............................. 1.61 W*
................................... 2:0 W**
(UCN-4~0IA)
Operating Ambient Temperature Range, TA.
Storage Temperature Range, Ts ............ .
-,O°C to + 70°C
. ......................... -55°C to +125°C
......... "
'0' . . . . . . . . . . . . . . . . . .
'Derate at the rate of 16.7 mWrC above TA ~ 25°C.
"Derate at the rate of 20 mW;oC above TA ~ 25°C.
+25°C, VDD
ELECTRICAL CHARACTERISTICS at TA
Ch8racteristic
Symbol
Output Leakage Current
IcEx
Collector -Emitter
Saturation Voltage
VCE!SATI
Input Voltage
VIt~(OI
Test Conditions
Voo=15V
Voo = 10V
Voo = 5.0 V (See note)
Voo = 15 V
Voo=lOV
Voo = 5.0 V
Voo=15V
Voo=lOV
Voo = 5.0V
All Drivers OFF
VR= 50 V, TA = +25°C
VR= 50V. TA = +70°C
IF = 350 mA
R'N
Supply Current
IDOIONI
(Each stage)
10010FFI
IR
Clamp Diode
Leakage Current
Clamp Diode
Forward Voltage
VF
5 V (unless otherwise specified)
Min.
Vc = 50V, TA = +25°C
VCE = 50V, TA = +70°C
Ic = 100 mA
Ie = 200 mA
Ic = 350 mA, Voo = 7.0V
V,Nl1 ,
I nput Resistance
=
Typ.
..
0.9
.1.1
---
1.3
-
-
13.5
8.5
3.5
50
50
50
-
--
Units
50
100
1.1
1.3
1.6
1.0
J-lA
J-lA
V
V
V
V
V
V
V
ku
kll
ku
mA
mA
mA
J-lA
J-lA
J-lA
V
-
--
200
300
600
1.0
0.9
0.7
50
-..
--
Limits
Max.
1.7
---.-
2.0
1.7
1.0
100
50
100
2.0
'Note: Operation of these deVices with standard TTL or DTL may require the use of appropriate pull-up reSistors to Insure the minimum logiC
or.
TRUTH TABLE
DUTY CYCLE
CONTROL
INN
STROBE
CLEAR
0
1
1
1
0
X
X
X
X
X
X
0
0
1
X
1
0
0
0
0
0
0
X
0
Information present at an input is transferred to its
latch when the STROBE is high. A high CLEAR input will set all latches to the output OFF condition
regardless of the data or STROBE input bds. A
high DUTY CYCLE CONTROL will set all outputs
to the OFF condition regardlesso!' any other input
conditions. When the DUTY CYCLE CO:"TROL
is low. the outputs depend on the state of their rcspcctiye latches.
OUT N
t -1
t
X
X
X
X
ON
OFF
OFF
ON
OFF
OFF
ON
OFF
X = irrelevant
t-I = previous output state
t = present output state
5-10
UCN·4401A and UCN·4801A (Cont'd)
TIMING CONDITIONS
CLEAR
STROBE
DUTY CYCLE
CONTROL
INN
OUT N
[)\flJ. N:).
A. Minimum data active time before strobe enabled (data set-up time)
B. Minimum data active time after strobe disabled (data hold time) ...
C. Minimum strobe pulse width. .. . ........ .
D. Typical time between strobe activation and output on to off transition
E. Typical time between strobe activation and output off to on transition
F. Minimum clear pulse width.
G. Minimum data pulse width
l -I - 400
i'.
;g 350
>-
~
250
~
u
r-....
~
100
450
o
c(
400
UCN-480IA
I
1\
E
\I\.
4'
o
I I
I
20
30
......
f'.
"-
!"
......
r:;....
"-
"I'....
6t--.,
Ii
I
lor 2
31'..
5"-
t--..
~
"
t-...
I ~g~g5~Tf:G OUTPUTS I
I SIMULTANEOUSLY
r--
I'
[-.....
r--
!'-7
.......
r-...
I'
........
........
t-...
t-...
I ' b....
r-...
r-... r-...
t-:
,
I
40
50
60
PERCENT DUTY CYCLE
'\
~ \..
.\.
~
.J
10
"-
r\
2 ........
f'.
I ~?:~~T~~~gUSLY
W
150
I'.
.INUMBER OF OUTPUTS I
200
i
......
I"
is
300
b
'"
it
UCN-4401A
~
~
· .100 ns
. ..... .100 ns
· .300 ns
......... 250 ns
· .250 ns
. .......... 300 ns
........ 300 ns
u
~ 450
!q
A-IO.895
100
70
80
90
100
10
20
30
40
50
60
70
80
90
PERCENT DUTY CYCLE
CA UTION: Sprqgue CMOS devices feature input static protection but are still susceptible to damage when exposed to extremely high static electrical charges.
5-11
100
UCN-480SA and UCN-4806A
UCN·480SA and UCN·4806A
BiMOS LATCHED DECODER/DRIVERS
FEATURES
•
•
•
•
•
•
High-Voltage Source Outputs
CMOS, PMOS, NMOS, TIL Compatible Inputs
Low-Power CMOS Latches
Hexadecimal Decoding
Internal PUII-Up/Pull-Down Resistors
Wide Supply Voltage Range
DESIGNED for use in high-voltage vacuum
fluorescent display driver applications, the
UCN-4805A and UCN-4806A latched decoder/
drivers combine CMOS logic with bipolar source
outputs. Both devices consist of eight high-voltage
bipolar sourcing outputs with internal pull-down resistors and CMOS input latches, hexadecimal decoder, and control circuitry (strobe and blanking).
The UCN-4805A BiMOS latched decoder/driver
is intended to serve as the segment driver with
standard 7-segment displays incorporating a colon or
decimal point. The UCN-4806A modification is designed for use with centered "1" (9-segment) displays. It has an I/O input to permit interrogating the
input latches for error-checking purposes. Both ICs
use hexadecimal decoding to display 0-9, A, b, C, d,
E, and F.
Both BiMOS latched decoder/drivers have sufficient speed to permit operation with most
microprocessor/LSI-based systems. The CMOS
input latches provide operation over the supply voltage range of 5 to 15 volts with minimum logic
loading. Internal output pull-down resistors eliminate the need for external components usually required for fluorescent display applications. When
used with standard TTL or low speed TTL logic,
both devices may require employment of input
pull-up resistors to insure a proper input logic high.
Dwg. No. A-IO,984
UCN-480SA
Dwg. rio. A-I0,983
UCN-4806A
5-12
UCN-480SA and UCN-4806A (Cant'd)
ABSOLUTE MAXIMUM RATINGS at 25°C FreeAir Temperature and Vss = 0 V
Number of
Outputs ON
(lOUT = 25 rnA)
Output Voltage, VOUT .......................... 60 V
Logic Supply Voltage Range, Voo ........... 4.5 V to 18 V
Driver Supply Voltage Range, VBB • . • • • • • . • • . 5.0 V to 60 V
Input Voltage Range, VIN .......... -0.3 V to Voo + 0.3 V
Continuous Output Current, louT ................. 40 mA
Package Power Dissipation, Po ................ 1.82 W*
Operating Temperature Range, TA ......... O°C to + 70°C
Storage Temperature Range, Ts ........ -S5°C to + 125°C
*Derate at the rate of 18.l8 mW/oC above TA
Max. Allowable Duty Cycle
at Ambient Temperature of
SO°C
SO°C
70°C
8
7
6
100%
I
92%
78%
1,0%
l~~;t
1
100%
100%
100%
= 25°C.
ELECTRICAL CHARACTERISTICS at TA = 25°C, Vos = 60 Y, VDO = 4.75 Vto 15.75 V, Vss = 0 V
(unless otherwise noted)
Characteristic
Output OFF Voltage
Output ON Voltage
Output Pull-Down Current
Output Leakage Current
Input Voltage
Symbol
VOUT
VINIl)
Input Current
VIN!O)
IINil)
Input Impedance
Supply Current
liN
IBB
lOUT
100
Test Conditions
Min.
loUT = 25 rnA
VOU! = VBB
TA = 70°C
Voo = 5.0 V
Voo = 15 V
57.5
-400
3.5
13.5
-0.3
Voo = 5.0 V
Voo = 15 V
Voo = 5.0 V
Display "8"
All outputs OFF
Voo = STROBE =
Voo = STROBE =
Voo = STROBE =
Display "8"
Voo = STROBE =
Display "8"
50
5.0 V, All other inputs = av
15 V, All other inputs = 0 V
BLANK = 5.0 V, Data latched,
limits
Max.
1.0
-850
15
5.3
15.3
+0.8
100
300
9.1
Units
V
V
pA
pfl.V
V
V
pA
pA
kG
-
100
200
500
rnA
pA
pA
pA
-
7.0
rnA
-
21
rnA
-
BLANK = 15 V, Data latched,
5-13
D
UCN-480SA and UCN-4806A (Cont'd)
UCN-480SA TRUTH TABLE
Outputs
Inputs
0
0
0
0
0
0
0
0
0
1
1
1
1
1
C
B
0
0
0
0
1
1
1
1
0
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
1
1
0
0
1
1
1
1
1
1
1
X
X
X
X
X
X
A dp BL
0 0 1
1 0 1
0 0 1
1 0 1
0 0 1
1 0 1
0 0 1
1 0 1
0 0 1
1 0 1
0 0 1
1 0 1
0 0 1
1 0 1
0 0 1
1 0 1
X 1 1
X X 0
$T
Character
0
0
0
.0
0
Zero
One
Two
Three
Four
Five
Six
Seven
Eight
Nine
A
b
C
d
E
F
dp
blank
0
0
0
0
0
0
0
0
0
0
0
0
X
d
e
f
g
dp
1
1
0
1
1
1
1
1
1
1
0
1
0
0
1
0
0
0
1
1
1
0
1
1
0
0
1
1
1
1
1
0
1
1
0
0
0
0
1
1
1
0
1
0
0
0
1
0
1
0
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
X
0
X
b
1
0
0
1
1
1
1
1
0
0
1
1
1
1
0
1
0
0
1
1
0
0
1
0
1
0
0
X
X
0
0
1
1
0
1
1
1
1
1
1
1
1
0
1
1
0
1
1
1
1
1
1
1
0
1
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
a
fl9
l
b
el=l: dP
x = irrelevant
d
D\I'G. "0. A-IO.98S
UCN-4806A TRUTH TABLE
Outputs
Inputs
D
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
X
X
C
B
0
0
0
0
1
0
0
1
1
1
1
1
0
0
0
0
1
1
1
1
0
1
1
0
0
1
1
0
0
1
1
X
X
X
X
0
A BL ST
0 1 0
1 1 0
0 1 0
1 1 0
0 1 0
1 1 0
0 1 0
1 1 0
0 1 0
1 1 0
0 1 0
1 1 0
0 1 0
1 1 0
0 1 0
1 1 0
X 0 X
X X 1
I/O
Character
1
1
Zero
One
Two
Three
Four
Five
Six
Seven
Eight
Nine
A
b
C
d
E
F
blank
interrogate
latches
1
1
1
1
1
1
1
1
1
1
1
1
1
1
X
0
b
1
0
1
1
0
1
1
1
1
1
1
0
1
0
1
1
0
X
1
0
1
1
1
0
0
1
0
0
1
1
1
1
1
1
1
0
0
1
0
0
0
1
1
1
1
1
1
0
1
0
0
0
X
X
d
e
f
g
h
1
0
1
1
0
1
1
0
1
0
0
1
0
1
0
0
0
1
1
1
0
1
0
0
1
0
1
0
1
1
0
1
1
0
1
1
1
0
1
1
1
1
0
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
X
X
X
X
1
1
1
1
0
0
X
1
0
0
0
1
0
1
0
1
1
1
1
1
1
1
1
1
0
a
fL /h
Ib
el_hllc
d
irrelevant
lJYoI:j.
X=
5-14
"0. A-10.986
UCN-480SA and UCN-4806A (Co nt' d)
DW---illJ OUT,
>-----11.llJ
OUT8
[}wg. No. A-1O,987
ABSOLUTE MAXIMUM RATINGS at 25°C
Free-Air Temperature and Vss = 0 V
The CMOS inputs provide for minimum loading
and are compatible with standard CMOS, PMOS,
and NMOS logic commonly found in microprocessor
designs. The use of CMOS latches also allows operation over a supply voltage range of 5 V to 15 V. When
employed with either standard TTL or low speed
TTL logic, the UCN-4815A may require the use of
appropriate pull up resistors.
Output Voltage, VOUT ........................... 60 V
logic Supply Voltage Range, Voo ............ 4.5 V to 18 V
Driver Supply Voltage Range, V" ........... 5.0 V to 60 V
Input Voltage Range, Y'N ........... -0.3 V to Voo +0.3 V
Continuous Output Current, louT ................. 40 rnA
Package Power Dissipation, Po .................. 2.0 W'
Operating Temperature Range, T, .......... O°C to +70°C
Storage Temperature Range, Ts ........ -55°C to + 125°C
The bipolar outputs may be used as segment,dot
(matrix), bar, or digit drivers in vacuum fluorescent
displays. All eight outputs can be activated simultaneously at ambient temperatures up to 60°C. To
simplify circuit board layout, all outputs are pinned
opposite their respective inputs.
'Derate at the rate of ZO mW/'C above TA
Number of
Outputs ON
(lOUT = 25 rnA)
A minimum component display subsystem, requiring few or no discrete components, may be
realized by using the UCN-4815A BiMOS Latch/
Source Driver with either a UCN-4805A or UCN4806A latched hexadecimal decoder/drivers or a
UCN-481OA serial-to-parallellatch/driver.
8
7
6
I
5-19
~
25'C.
Max. Allowable Duty Cycle
at Ambient Temperature of
60°C
50°C
70°C
100%
100%
86%
98%
100%
100%
100%
100%
I
I
D
UCN-4815A (Cont'd)
ELECTRICAL CHARACTERISTICS at T. = 25°C, Vaa = 60 V, Voo = 4.75 Vto 15.75 V, Vss = 0 V
(unless otherwise noted)
Characteristic
Output OFF Voltage
Output ON Voltage
Output Pull-Down Current
Output leakage Current
Input Voltage
Symbol
Min.
Test Conditions
-
YOU!
lou!
VINIl)
Input Current
VINIOI
IINIlI
Input Impedance
Supply Current
liN
IBs
100
57.5
-400
loUT = 25 rnA
yOU! = VBB
TA = 70°C
Voo = 5.0 V
Voo = 15 V
-
-
-850
15
5.3
15.3
+0.8
100
300
50
-
-
10.5
100
100
200
1.0
3.0
3.5
13.5
-0.3
-
Voo = 5.0 V
Voo = 15 V
Voo = 5.0 V
All outputs ON
All outputs OFF
Voo = 5.0 V, All outputs OFF, All inputs = 0 V
Voo = 15 V, All outputs OFF, All inputs = 0 V
Voo = 5.0 V, One output ON, All inputs = 0 V
Voo = 15 V, One output ON, All inputs = 0 V
Limits
Max.
1.0
~
lOOK~ V
vss
27K
15K
lOOK
Dwg, No. A-IO.980
TYPICAL INPUT CIRCUIT
Dwg. No. A-10,981
TYPICAL OUTPUT DRIVER
5-20
Units
V
V
pA
pA
V
V
V
pA
pA
kO
rnA
pA
pA
pA
rnA
rnA
UCN-48.15A (Cont'd)
ENABLE~
----~
----~----~------r+----~r--l~------------~
Dwg. No. A-lO,991
TIMING CONDITIONS
A.
B.
C.
D.
E.
F.
Minimum Data Active Time Before Strobe Enabled (Data Set-Up Time) ....................................
Minimum Data Active Time After Strobe Disabled (Data Hold Time) ......................................
Typical Strobe Pulse Width For Power-Up Clear Disable ...............................................
Minimum Strobe Pulse Width After Power-Up Clear Disabled ...........................................
Typical Time Between Strobe Activation and Output On to Off Transition ..................................
Typical Time Between Strobe Activation and Output Off to On Transition ..................................
Minimum Data Pulse Width ..................................................................
Infonnation present at an input is transferred to its
latch when the STROBE and ENABLE are high.
The latches will continue to accept new data as long
as both STROBE and ENABLE are held high. With
either STROBE or ENABLE in the low state, no
infonnation can be loaded into the latches.
When the BLANKING input is high, all of the
output buffers are disabled (OFF) without affecting
the infonnation stored in the latches. With the
BLANKING input low, the outputs are controlled
by the state of the latches.
100
100
5.00
300
ns
ns
ns
ns
1.0 /-tS
1.0 /-tS
300 ns
UCN-4B15A TRUTH TABLE
o
1
X
X
X
X
X
Inputs
STROBE ENABLE
1
1
1
1
X
X
o
X
o
X
X
0
X
0
x = irrelevant
T·1 = previous output state
T = present output state
On first applying VDO to the device, all latch
outputs assume a low state (Power-Up Clear) resulting in all outputs being OFF. The latches will remain
in the low condition until the Clear is disabled by a
STROBE high input. Data may be entered into the
latches during Power-Up Clear disable if the ENABLE input is also high.
5-21
BLANK
T-l
T
o
o
.1
o
o
o
o
X
X
X
1
o
o
1
o
1
o
1
o
1
o
D
Q
SPECIAL CIRCUITS
CUSTOM PACKAGING
' - -
,,:/11""
4\.,\4,
..... ""P" ... +. . . . . .
- - - -
Device Type
Data
ULN-2139D and 2139M
ULS-2139D and 2139M
ULN-2140A
ULS-2140H
UlN-2151D and 2151M
6-2
6-2
6-4
6-4
6-7
ULS-215ID and 2151M
ULN-2171D and 2171M
UlS-2171D and 2171M
ULN-2300M
ULN-4136 thru 4436A
6-7
6-9
6-9
6-11
6-17
Custom Circuit Designs
Custom Packages
6-19
6-20
Applications
Thermal
IE
48
IE
IE
Device Type
Description
ULN/ULS-2139D/M
ULN/UlS-2140A/H
ULN/ULS-2151D/M
Op. Amp., Ext. Comp., 4.2 V/j.lS
Quad Current Switch
Op. Amp., Int. Comp., 0.6 V/j.lS
ULN/ULS-2171D/M
ULN-2300M
ULN-4136/4336A
UlN-4236/4436A
Op. Amp., I nt. Comp., 1.5 V/ j.lS
Am pi ifierI Detector/ SCR
Quad Op. Amp., 1.0 V/j.lS
Quad Op. Amp., 0.6 V/j.lS
6-1
II
ULN·2139 and ULS·2139
TYPE ULN.2139 and ULS·2139
HIGH PERFORMANCE MONOLITHIC
OPERATIONAL AMPLIFIERS
FEATURES
• Wide Operating Temperature Range, TA :
ULN-2139 ..... O°C to +70°C
ULS-2139 ...... -55°C to +125°C
• Fast Slew Rate: 4.2V/J.l.s Typ. at Unity Gain
• Large Power Bandwidth: 20V p_p at 20kHz Min.
• Low Offset Voltage: ImV Typ.
• Low Offset Current: 20nA Typ.
• Input Overvoltage Protection
• Output Short-Circuit Protection
ULN-Z139D
ULS-Z139D
Description
SERIES 2139 Operational Amplifiers are monolithic integrated circuits designed as improved plug-in replacements for the MC-1439 and MC-IS39.
Features include large power-bandwidth, fast slew rate, low input offset voltage, and operation over wide temperature ranges. External compensation
allows adjustment of frequency response and slew rate for specific applications. Unity gain compensation is accomplished with a 2200pF capacitor
and a 390 Q resistor connected in series between pins 1 and 8.
INPUT LAG
1
INV.
INPUT
NON~'NV.
INPUT
3
.,..____...r
O'liG. NO.
Applications
ULN-Z139M
ULS-Z139M
Designed for general-purpose use, Series 2139 Operational Amplifiers are
ideally suited for signal processing applications, voltage followers, summing
amplifiers, amplifiers requiring specialized or general-purpose feedback networks, and applications where selective frequency response and fast slew
rates are a requirement.
Packages
Operating Temperature Range
- 55°e to
Part Number
OOCto +70 0 C
Package
TO-99
8·Lead DIP
ULN-2139D
ULN-2139M
6-2
+l250e
ULS-2139D
ULS·2139M
OUTPUT
LAG
A-9096A
ULN·2139 and ULS·2139 (Cont' d)
ELECTRICAL CHARACTERISTICS
Output Voltage Swi.ng
Power Dissipation
Input Noise (equiv.)
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
Slew Rate
Power Bandwidth
TA
Conditions
Characteristic
Input Offset Voltage.
Input Offset Current
I nput Bias Current
Input Resistance
Common Mode
Input Voltage
Open Loop
Voltage Gain
@,
=
25°C, Vs
Rs<10KD
150
±1
±20
150
300
±11
94
±1O
(Compensation, 390 Q
in series with 2100pF
between pins 1 and 8)
ULN·2139
Typ.
Max ..
Min.
±3
±60
500
±7.5
± 100
100U
Units
mV
nA
nA
kD
100
±2
±20
250
300
± 12
±11
±12
Vp
106
86
100
dB
±13
± 13
±1O
120
20
Vo = OV
Rs = 10K D, f = 1kHz
Vo = ± lOV, ULS Rl = 1Kn,
ULN Rl = 2K!J
Vd = ± lOV, ULS Rl = 1K D,
ULN Rl = 2Kn
±15V
ULS·2139
Typ.
Max.
Min.
Vo = ±10V
ULS Rl:2: lKn,
ULN Rl > 2K!J
ULS Rl = 1Kn,
ULNR l =2K!l
=
150
Vp
200
120
20
mW
nV/(Hz)y2
80
100
80
100
dB
75
90
75
90
dB
1.0
4.2
0.8
4.2
V/I'S
20
50
2
1
10
50
2
1
kHz
k!l
MHz
Output Resistance
Unity Gain Bandwidth
GUARANTEED ELECTRICAL CHARACTERISTICS OVER TEMPERATURE <0 Vs = ±15V
ULS·2139
Operating Temperature Range
Characteristic
Conditions
Input Offset Voltage
Input Offset Current
Input Bias Current
Open Loop
Voltage Gain
-55
Min.
UlN·2139
125
Max.
0
Min.
±4.5
±80
800
Rs < 10K D
Vo = ±10V
ULS Rl:2: 1Kn, ULN Rl:2: 2K!l
86
+70
Max.
±9
±115
1200
82
Units
°C
mV
nA
nA
dB
ABSOLUTE MAXIMUM RATINGS
Power Supply, +Vs ....
-Vs ..
Differential Input Voltage ..
Common Mode Input Swing ..
Load Cu rrent ..
. .+18V
.. -18V
±Vs
. ±Vs
...... 15mA
Output Short Circuit Duration..
Storage Temperature Range, Ts.
. ..... Continuous
. ... -65°C to +150°C
.««.««
NOTES:
L For Vs less than± 15V, the absolute maximum rating is equal to Vs.
6-3
II
SERIES 2140
SERIES 2140
HIGH PERFORMANCE
QUAD CURRENT SWITCHES
FEATURES
•
•
•
•
Variable Reference: -3 to -10 Volts
Low Temperature Coefficient: 5 ppm/"C
Fast Settling: 300 ns to 0.01 %
TTl/CMOS Compatible Inputs
Description
SERIES 2140 quad current switches are high precision monolithic integrated circuits for use in digital-to-analog converters. Each device contains
four logic-controlled current switches and a reference transistor. Continuously running current sources and superior thermal layout, maximize
speed and accuracy by reducing transitional anomalies. Series 2140
switches accept a wide range of d-c references or an a"c reference for
two-quadrant mutiplying D/A applications. Inputs may be driven from
TTL, or similar sources and are independent of reference voltage level.
The ULN-2140A switches are rated for operation over the temperature
range of -O°C to + 70°C, the 'A' suffix indicating a 14-pin dual in-line
plastic package. The ULS-2140H switches are rated for operation over the
extended temperature range of - 55°C to + 125°C with the 'H' suffix
indicating a dual in-line hermetic package tq Military Specification
MIL-M-3851O. Devices in unpackaged, chip form, for use in hybrid
circuit applications, are designated by changing the suffix Ietter from A or
H to C.
On special order, hermetically-sealed quad current switches with highreliability screening to MIL-STD-883 are available by adding the suffix
'MIL' to the part number, for example, ULS-2140H-MIL. Also, on
special order, devices with improved linearity and drift can be supplied.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee ................................... + 18 V
VEE
...... -18V
Input Voltage, V,N . • • • • • . . . . . • • • • • • . • • • • • • . . . • • • • . . . • • • + 6 V
Reference Voltage Range, VREf ........................ -3 V to VEE
Operating Temperature Range, T, (ULN-2140A) ........ -O°C to +70°C
(ULS"2140H) ....... -55°C to + 125°C
Storage Temperature Range, Ts ' . . . . . . . . .
-65°C to + 150°C
6-4
SERIES 2140 (Cont' d)
ELECTRICAL CHARACTERISTICS at TA = +25°C, Vee = +5 to + 15 V,Va = -15 V, l.s8
Operational Amplifier Summing Junction Load (unless otherwise noted)
= 1 mA,
Limits
Characteristic
"0" InDut Voltal!e
"}" InDut VDIt811e
"0" Input Current
"}" Input Current
OutDut Volt8l!e
OutDut Volt8l!e Swinl!
Output Current
Svmbol
V,,,,,,
V,,,,,,
I'Nlm
I'N'"
Vom
IlVnl"
IllS!!
I," ,
IBIT 3
ILsB
Settling Time
Output leakage Current
Ref. Transistor Static
Forward Current Gain
Non-linearity
TC of Non-linearity
loUT
hFE
Scale Factor Drift
Supply Current
..
..
Icc
lEE
Test Conditions
.'
VIN= 0.8 V
v,. == 2.4 V
R = } kO
R = } kO lOl!ic = 0000 to 1111
LORic = 1000
LOl!ie = 0100
LORic = 0010
LORic = 0001
R = 1 kn, To 0:01% Logic = 1000 to 0111
LOl!ic = 0000
Ie = 125 pA
Over. Operating Temperature Range
-O·C to + 70·C (ULN-2140 Devices)
-S5"C to + 12S·C (ULS-2140 Devices)
.Over ODeratinl! Temperature Ranl!e
,
Vee - +lS V
Min.
TVD.
-
-
Max.
0.8
-
-1.0
10
2.0
-
-
-2.0
2.0
1.0
0.5
0.25
-
100
-
-
-
Units
V
V
uA
uA
See Note
1.0
0.5
0.25
0.125
300
-
-
V
rnA
rnA
rnA
rnA
ns
-
-
-
-
0.5
20
10
%
ppm/"C
pp·m/·C
ppm/·C
S.O
8.0
-8.0
10
-
uA
rnA
mA
Note: Output voltage WIth a resIstIve load WIll be a negatIve voltage .
II
6-5
....."",.
SERIES 2140 (Cont'd)
5K
lOGIC' INPUTS
lSB
21
ANALOG
OUTPUT
VOLTAGE
ULN-2140A
10K
~""""'-""""~-4-4---4-+------+--4_4-_4-_-+-_+-_-o-15V
10K
75K
+ 1OV O---'\Mr--~Nf,I'--4--+
REFERENCE
"CONTACT FACTORY
TYPICAL APPLICATION
COLLECTOR
REFERENCE
BASE
RAIL
LS8
OUT
BIT 3
OUT
SCHEMATIC
6-6
BIT 2
OUT
MSB
OUT
Er.1iTTER
REFERENCE
ULN·21S1 and ULS·21S1
TYPE ULN-2151 and ULS-2151
HIGH PERFORMANCE MONOLITHIC
OPERATIONAL AMPLIFIERS
FEATURES
• Wide Operating Temperature Range, TA :
ULN-2151 ..........
to +JOOC
ULS~21S1 ....... - SSoc to + 12SOC
• Input Offset Current: 2nA Typ.
• Input Bias Current: 3SnA Typ.
• I nput Offset Voltage: ± O.7mV Typ.
• Open Loop Voltage Gain: 250 V/mV Typ.
• Input Resistance : 3 Mil Typ;
• Offset Null Capability
• Output Short-Circuit Protection
.• Input Overvoltage Protection
oac
UlN·2151D
UlS·2151D
UlN·2151M
UlS·2151M
Description
SERIES 2151 Operation Amplifiers are monolithic integrated circuits
designed for high performance and ease of application. They feature
high common mode input voltage range, low input offset and bias currents,
low. input. offset voltage, input and output protection, offset voltage null
capability, and high open loop voltage gain. The 2151 Series is a direct
plug-in replacement for the J'A741 and with improved electrical performance
over a wider temperature range.
Applications
Designed for general-purpose use, Series 2151 Operational Amplifiers are
ideally suited for signal processing applications, voltage followers, summing
amplifiers, integrators, and amplifiers requiring specialized or general feedback networks.
ABSOLUTE MAXIMUM RATINGS
Packages
Package
TO-99
8-Lead DIP
-
Power Supply Voltage, ± Vs: ULS·2151.
ULN-21S1 ..
Differential Input Voltage
Input Voltage (See Note 1), VCM1
Operating Temperature Range
-55°C to +125'C
O°Cto+70°C
Part Number
ULN-2151D
ULS·2151D
ULN-2151M
ULS·2151M
Output Short Circuit Duration.
. Continuous
Storage Temperature Range, Ts ......... -6SoC to +lSO°C
NOTES:
L For Vs less than'" 15V, the absolute maximum rating is equal to Vs.
6-7
"'."'.'.
. _.... ±22V
...... ±20V
. . _... ±30V
.... _.... ±lSV
ULN·2151 and ULS·2151 (Cont'd)
ELECTRICAL CHARACTERISTICS
(g
TA = 2SoC
Vs
=
± lSV
ULS-2151
Conditions
Characteristic
I nput Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Common Mode
Input Voltage
Open Loop
Voltage Gain
Output Voltage Swing
Power Dissipation
I nput Noise (equiv.)
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
Slew Rate
Full Power
Bandwidth
Output Resistance
Min.
Rs < 5DKn
Va = ±10V
Rl> 2Ku
Rl = 2K!l
Va = OV
Rs = 10K Il, f = 1kHz
Min.
Typ.
0.4
±l
±5
70
1.5
±2
±5
50
Max.
+ 12
+ 13
+11
+13
Vp
50
+10
250
+13
51
25
25
+ 10
150
+ 13
51
30
V/mV
Vp
mW
85
35
±5
±25
250
Units
1.5
85
45
mV
nA
nA
Mn
nmH~
85
100
75
90
100
0.6
75
0.4
95
0.6
V/~s
75
kHz
ohms
=
2Kn
85
0.5
Va = + 10V, RL
=
2K II
8
=
ULN-2151
Max.
+0.7
+2
35
3
+10V, Rl
Va
Typ.
dB
dB
6
75
GUARANTEED ELECTRICAL CHARACTERISTICS OVER TEMPERATURE@ Vs = ±lSV
ULS-2151
-55
+125
Min.
Max.
Operating Temperature Range
Characteristic
Conditions
Input Offset Voltage
Input Offset Current
Input Bias Current
Open Loop
Voltage Gain
Rs < 10K n
ULN-2151
0
Min.
+5
+ 15
75
Va = ±lOV
RL ~ 2K!l
25
6-8
+70
Max.
+6.5
+50
350
12.5
Units
°C
mV
nA
nA
V/mV
ULN·2171 and ULS·2171
TYPE ULN-2171 and ULS-2171
HIGH PERFORMANCE MONOLITHIC
OPERATIONAL AMPLIFIERS
FEATURES
• Wide Operating Temperature Range, TA :
ULN-2171. . ..... O°Cto+70oC
ULS-217l ...... -55°C to +125°C
• High Common Mode Input Impedance: 5000M II i 3pF Typ.
• High Input Impedance: 8M II, 3pF
• Slew Rate at Unity Gain: L5V/J.ts Typ.
• Input Offset Voltage: O.7mV Typ.
• Input Offset Current: 4nA Typ.
• Input Bias Current: 8nA Typ.
• Offset Null Capability
• Output Short-Circuit Protection
• Operates from ± 3V to ± 22V Power Supplies
• Input Overvoltage Protection
ULN-2171D
ULN-2171M
ULS-2171D
ULS-2171M
Description
SE R I ES 2171 Operational Amplifiers arc monolithic integnlted circuits desigiled for high performance and stability. They employ a unique input current cancellation network which achieves high input impedance and low input current while maintaining fast slew rate. Features include high slew
rate. high common mode impedance. low input offset and bias currents, low
offset voltage. input and output protection. and input offset voltage null
capability. In addition. no external components afC required for frequency
compensation.
II
Applications
Designed for general-purpose usc. Series 2171 Operational Amplifiers are
ideally suited for signal processing applications. voltage followers. integra~
tors. and amplifiers requiring specialized or general-purpose feedback networks.
Packages
ABSOLUTE MAXIMUM RATINGS
Operating Temperature Range
DOC lo+7DoC
Package
Power Supply Voltage, ± Vs: ULS-2171_
ULN-2171.
Differential Input Voltage
Input Voltage (See Note I), VCM1
-55'C to . 125'C
PART NUMBER
TO-99
ULN-2l71D
ULS-2l71D
Head DIP
ULN-2l71M
ULS-2l71M
Output Short Circuit Duration.
Storage Temperature Range, Ts.NOTES:
1. For Vs less than
6-9
-".""'-,.,
~ 15V,
_. ±22V
... __ .. ±20V
.±30V
.. ± 15V
. __ Continuous
. -SSOC to + 150°C
the absolute maximum rating is equal to Vs.
ULN·2171 and ULS·2171 (Cont'd)
±15V
ELECTRICAL CHARACTERISTICS @ TA
Characteristic
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Common Mode
I nput Voltage
Open Loop
Voltage Gain
Output Voltage Swing
Power Dissipation
Input Noise (equiv.)
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
Slew Rate
Power Bandwidth
Output Resistance
Conditions
Min.
ULS·2171
Typ.
8
±0.7
±4
8
13
± 12
50
±IO
Rs= :;
SOY
(L
(L
Continuous Forward Blocking Voltage', VFXM .
Continuous Anode Forward Current, IFM IAVI
(at or below 25 C free-air temperature)'
Average Forward Gate Power,PGF IAVI
iil
300mA
-5.2
~
t'
3A
--
Peak Forward Gate Currents, IGFM
0.1 A
Peak Reverse Gale Voltage, V GRM
5V
~
-.;.;;;,-
---L
--+i--- I -++-
-4-++--.. . . .(
20
+40
+60
~70
TA , IN °c
Figure 2
QUIESCENT POWER SUPPLY CURRENT DRAIN AS A
FUNCTION OF AMBIENT OPERATING TEMPERATURE
0 C to +70 C
100
250mW
Vcc=20V
Rcc== 16Kn
NOTES,
1
-'(--1-
C, =11"
C, =NON<
C, = 011'F
C,' = 3pF ISTRAYI
Maximum ratings are limiting values above which the serviceability may be impaired Jrom the viewpoint of life or satisfac-
i
The forward or reverse blocking capabilities
N
of the SCR should not be tested with a constont current source
such that the voltage applied exceeds the maximum roted voltage.
2. Values apply when the gate-te-cathode resistance, RGK,:$ 16Ka.
3.
·20
AMBIENT TEMPERATURE,
-55 C to +125 C
Internal Power Dissipation, Po.
fory performance.
I
I
-40
AMPLIFIER-SCR CIRCUIT
1.
~ ........
i
5.0
.0.01 W
Operating free-air temperature, TA .
-
;:
Peak Anode Current (10,"S duration)', IFM IPUlSEI
Storage Temperature, TSTG .
......
0:
0:
3
lOrnA
tj
z
SCR maximum rated anode current, IFM (AV), applies for continuous
doc operation with resistive load. For operation above 25 C
free-air temperature, refer to Anode Forward Current derating
"El
"
curve, Figure 11.
::>
80
I
VB
(L
j--
70
(L
z
A. Peak surge current should not be repeated until thermol equilibrium
is restored.
5.
5CR peak forward gate current maximum rating at'PW:S 300.u5,
f
=
120pps.
AMBIENT TEMPERATURE, TA , IN
°c
Figure 3
INPUT IMPEDANCE AS A FUNCTION OF
AMBIENT OPERATING TEMPERATURE
,
38
I
...,.......
,
40
'-
_yee = 20V
R cc = 16Kil
I-C, .. l,uF
C, = 0.11"
1
I-C, = 3pF (STRAy)t
I- Va = 10MVRMS
f )=
30
-40
11"'
I
I
.......,..........
......
i
..........
~
.......
f
r--..
I
~1=~OKn
11R, =10JKil,
~! = 8~il i
""I
-60
10
10'
C"OII'Fj
T.=Z5C
,_
Va "OMVRMS
~
+70
TA , IN °c
'1 I'l"l
ITT
10'
TI
I
= II'F
C, =3pFISTRAY)
........
-r
'40
AMBIENT TEMPERATURE,
I cc =5MA
c,
--
NOTE: F
Lt
~
w
~J
iF
Z
"'
~
0
j
>
~I
I
~J
J
20
If
I
g
j------- I--
'"
8t;:;
.,OMVRMS
~
'G
I'
K' BK~
c,.o"I'~j~~
._-
f 'IKHz
Va' 20 MV RMS_
I
--r----
-- f--
I
RCK "" 2K.A.
o
·25C
-
·40
10 4
10 3
'II'F
"
o"
C, • O.II'F
1/
10 2
10
C,
c. '3pF(STRAY)
I-
c • • 3pF (STRAY)
Va
TA
r-
>a.
Vcc '20V
R cc ·1.6Kfi
---t-~t---
W
~"'
I cc ' 5 M A -
~
j
10
v
-i
3
;;
.,8
•
~
U
,
,2
AMBIENT TEMPERATURE,
FREQUENCY IN HERTZ
Figure 5
VOlTAGE GAIN FOR VARIOUS INPUT COUPLING
CAPACITORS AS A FUNCTION OF FREQUENCY
TA
.60
'70
,IN'C
Figure 8
DETECTOR OUTPUT VOLTAGE AS A FUNCTION OF
AMBIENT OPERATING TEMPERATURE
40
24
"1\
3:~ 30
.;
Z
:I;
~\ "r"'.,.
~
'"~
~
j
I
\
,
..J'
K
~
12
0:
....
8
"'
C>
1\
0
10 5
o
4
10
C,
t
VS • v.
I
""'- i""'oo..
~ 6.0
>
'"~
50
I ,f
I4
>
;;
'"
~
W 40
~"
I-
>
...i
....
>
....
..J
~ 30
>-
20
r--
12
14
RGK , IN
16
Kft
10
Icc= 5MA
= 'I'F
C2 = 3pF(STRAVL__
f---c, = O.II'F
RL
= 200n
f
= I KHz
........ ~k·21
~.Q- r----
i"'-
0:
....
0
g
1KHz
=
Figure 9
SCR TRIGGER lEVEL AS A FUNCTION OF
GATE·TO·CATHODE RESISTANCE (R GK )
B
"
'"
25C
f
~
GATE-TO-CATHODE RESISTOR,
Figure 6
VOLTAGE GAIN FOR VARIOUS FEEDBACK
CAPACITORS AS A FUNCTION OF FREQUENCY
g:"
l'-
= 200n
TA •
4
FREQUENCY IN HERTZ
~
JRL
I\,
ii'
I-
L
Icc. 5MA
C, • II'F
C. = 3pF(STRAY)
C, = OII'F
r-V. =V.
"'ii''"
10
RGK =8Kn
I-
w
0
-40
DETECTOR LOAD RESISTANCE IN Kfi
-
.
AMBIENT TEMPERATURE,
Figure 7
DETECTOR OUTPUT VOLTAGE AS A FUNCTION OF
DETECTOR LOAD RESISTANCE
,~
TA ,
.
IN ·C
Figure 10
SCR TRIGGER LEVEL AS A FUNCTION OF
AMBIENT OPERATING TEMPERATURE
6-14
• 0
ULN·2300M (Cont' d)
300
~
z
"'
COJTINUJUS WI'TH
0:
0:
250
::>
u
..
I!c 5~A
=
~
o
i~
200
0: Z
0-
~
.
g150
'".....
1000
~
500
"
~
,
...!
-'-
0:
0:
.....
-
/'
100
,:
~ 50
.....
<3
8L
o
~
f5~loo
0:
~
;;
TA =70C
10
TA= 25C
0:
"
"X
::>
50
~
0
~
{L
TA"oc
12
40
1
-20
+20
+60
+40
AMBIENT TEMPERATURE,
TAl
IN
+70
L
o
0.5
1.0
FORWARD VOLTAGE DROP,
°c
2.0
1.5
VF • IN
VOLTS
OWG. NO. A-6572
Figure 11
Figure 13
SCR ANODE FORWARD CURRENT DERATING CURVE
FORWARD VOLTAGE DROP AS A FUNCTION OF
ANODE FORWARD CURRENT
3.2
0.8
W
"
~ ~
0.6
"'z
g
-~ 0.4
irz
>-3
"'
I" ~
"-2,4
-r-. -r--
~
....~
~ 1.6
~
0:
0:
::>
u
-I'-. ~
r-
8J;.=4Kfi
§O.8 r-- ...
~-> 0.2
&..-8~n
o
I
- 40
-20
+20
AMBIENT TEMPERATURE,
+40
+60
+70
TA , IN·C
r- l"- t-
~
>-
o
r---. r-~2k.Q
....
"'-
>0
0:>
to-..
..
Rii.=16Kn
-
-20
-.l
AMBIENT TEMPERATURE,
+
TA , IN ·C
Figure 12
Figure 14
SCR GATE TRIGGER VOLTAGE AS A FUNCTION OF
AMBIENT OPERATING TEMPERATURE
SCR HOLDING CURRENT AS A FUNCTION OF
AMBIENT OPERATING TEMPERATURE
6-15
ULN·2300M (Cont'd)
AMPLI 300 nA/fc at 800 nm
Schottky - 0.1-0.4 Vat 1 ,.,A to 0.3-0.6 V at 1 rnA
Small Signal- BV = 7 V
Other:
Time in Weeks
Define Specifications
Circuit Design
2 to 10
Bread board Construction
2 to 8
Breadboard Approval
3 to 4
Circuit layout
2 to 8
Prototype Construction
3 to 8
Production Pilot Run
8 to 12
Production Volume
12 to 16
Total 32 to 66 weeks at an engineering cost of between $20,000
and $50,000 but not including special test hardware or assembly
tooling.
SCRs - to 1 A, to 60 V
PUTs - to 1 A, to 60 V
12l - propogation delay typically 100 ns
BiMOS - High-power bipolar plus low-power MOS
Hall Cells - 35 mY/kG
Application Areas of Sprague Expertise
.Safety - OFI, smoke detectors, burglar alarms
TV - NTSC or PAL; video, chroma, sound, sync" IF
Toy - sound generators and amplifiers, optolinear, timers, controls Audio - 250 mW to 10 W, mono and stereo
Automotive - controls, monitoring, safety, radio, clock
Camera - photodiodes, light integrators, timers, controls
display drivers, Hall cells, optolinear
communications, fuze, interface
Computer - interface to ± 120 V or 1.5 A
Tranilitor Arrayl - small signal, control, high current, SCR
Interface -
Control - Schmitt triggers, timers, Hall cells
Military -
Radio -
AM, FM, FM stereo, AM stereo
6-19
.if1IIiIII!!'P',
Optional Package Capabilities
Standard integrated circuits from the Sprague Electric Company are
most often furnished in packages meeting industry or military standards
(JEDEC TO-87, TO-91, TO-99, TO-lOO, or TO-1l6, or MIL-M-385lO).
However, on special order, other packages or assemblies of packaged
devices may also be supplied. A few special order devices are illustrated
above and include special heat sink tabs, subminiature plastic packages,
printed wiring boards, flexible circuits, and complex assemblies. Devices
incorporating photodiodes are furnished in clear plastic cases.
6-20
Q
APPLICATIONS INFORMATION, PACKAGE DRAWINGS,
THERMAL CHARACTERISTICS
' - - - - - - -
Expanding the .Frontiers of IC Interface for Electronic Displays ..................... 7-2
Electrical Characteristics for Series ULN·~OOOA Darlington Arrays .................. 7-12
DlL Peripheral/Power Drivers - 'A Giant Step Backward' ........................ 7-15
Completely Monolithic ICSeries for Gas Discharge Display Interface ................ 7-25
Augmenting the lIP LSI Revolution with New Power Interface for Peripheral Loads ..... 7-31
Series ULN·2000A Darlington Transistor Arrays - Description and Application ......... 7-42
Computing IC Temperature Rise ..................... " ...... " ............. 7'-49
Sprague Package Drawings .......... , ..................... , .............. 7-53
Package Thermal Characteristics .................... ; ...................... 7-53
See Also:
Operating and Handling Practices for MOS Integrated Circuits ..................... 5-2
Custom Circuit Designs ............................... : .................. 6-19
D
APPLICATIONS INFORMATION
Expanding the Frontiers of Ie Interface
For Electronic Displays
INTRODUCTION
The original monolithic high-voltage/high-current
power drivers from Sprague were capable of
sustaining 100 V and sinking load currents of 250 rnA
on each of four outputs. That 1970 peripheral driver
capability has since been expanded and improved on
to solve many of the most difficult display interfaces.
Our newest devices are rated for operation to 130 V,
sourcing or sinking to 1.5 A, and as many as eight
drivers per package (not all together) with inputs for
TTL, Schottky TTL, DTL, CMOS, and PMOS.
An increased awareness for improvements in
reliability and space and power reductions provided a
rather successful military market for Sprague lamp
and relay interface; early success was evident in
military aircraft indicator lamp interface, a tough
application for TTL type ICs due to severe inrush
currents resulting in secondary breakdown during
"turn on". The increased current sinking capability
of the Sprague ICs offers a solution to lamp interface
that usually obviates the need for "warming"
resistors (across the output) Which slightly warm the
lamp filament and thus mInImIze problems
associated with cold lamp filaments.
LAMP (INCANDESCENT) INTERFACE
Utilizing marketing inputs that related to existing
hybrid interface circuits, a group at Sprague designed
and manufactured monolithic ICs which initially
were largely used for aircraft indicator lamp interface. Although not widely known, these quad driver
units were developed quite independently (and
simultaneously) to the ubiquitous 75451 series of
high-speed, low-voltage peripheral drivers. A concentration upon circuit design factors, improvements
in DIP packaging (copper alloy lead frames), and
tighter, tougher control of diffusion-related
parameters has allowed the manufacture of quad
power drivers rather than the dual mini-DIPs offered
by other sources.
The relay driver types of Sprague IC drivers
(and other similar transient-protected ICs) are
somewhat more useful than the so-called general
purpose types, since the diode common terminal may
be switched for a system "lamp test". As shown in
Figure 1, only a single connection to each DIP is
required.
TIl
OUTPUT
Figure 1
7-2
APPLICATIONS INFORMATION (Cont'd)
The high current-sinking capability of the Sprague
ICs allows such loads as the #327 or #387 lamps
(usually two in parallel - 28 V at 40 rnA each) to be
driven without difficulty of secondary breakdown.
The device beta will usually not allow sinking of the
10 to 13 times (nominal value) inrush current of cold
lamps; but the lamp rapidly reaches a current level
within the device output limitations (Figure 2 shows
current as a function of time for a single #327 lamp).
Sustaining this instantaneous inrush current and its
peak power has been a key element in the success of
many lamp interface circuits.
monolithic IC interface devices for the high-voltage
gas discharge panels has been one of the trailblazers
in the world of display interface ICs. Intended for
use in multiplexed display systems, these ICs present
one of the easiest and least expensive solutions to a
difficult interface problem. A combination of highvoltage bipolar techniques with thin-film resistor
technology (circuit resistors sputtered over the IC
dielectric) has provided both digit (anode) and
segment (cathode) interface.
To facilitate a minimum component interface, a
split supply (± 100 V) is employed to allow d-c levelshifting (rather than capacitors 01">200 V transistors)
and both digit and segment drivers incorporate all
pull-up, pull-down, current limiting, off-bias
reference, etc. which were formerly required in
discrete and/or hybrid systems. With the combination of the digit and segment drivers (each
capable of withstanding 120 V), the split power supply approach affords PN diode IC technology
suitable for driving a display usually requiring a 180
V minimum ionization voltage (equivalent to ±90 V
in the split system).
0.40
0.36
0.32
0.28
0.2 4
(f)
w
0.2 0
0::
~
0.16
::;:
«
0.12
\
0.08
..........
0.0 4
o
The use of the Series UDN-61oo17100A gas
discharge display drivers shows the need for only two
monolithic ICs for displays of up to eight digits and
eight .segments as shown in Figure 4. Systems
requiring digit or segment counts greater than eight
employ additional driver ICs, and with the exception
of theType UDN-7180A segment driver, the segment
ICs all have outputs with internal current-limiting
resistors for the display segments. The UDN-7180A
device, for reasons of package power dissipation
and/or dissimilar segment currents (certain 14 or 16
segment alphanumeric panels) can also be used, but
must have external, discrete current-limiting
resistors.
\
o
5
I--
10
15
20
25
30
35
40
45
50
DWG. 110. 0\-10,289
MILLISECONDS
Figure 2
GAS DISCHARGE DISPLAY Ie.
Early in 1972, Sprague successfully produced its
first high-voltage IC designed for gas discharge
displays - a five channel, 130 V unit for cathode
(segment) interface. Subsequently, other circuits,
both cathode and anode drivers, were produced;
most of which were used in calculator applications
with the Burroughs Panaplex@ II. In Figure 3 is
shown a display interface system utilizing the UHP~
481 and UHP-491 display drivers, associated thickfilm networks, and discretes. This was a step forward, but still required external discrete components.
Higher current applications are difficult for both
programmable current and switching type display
drivers. Segment currents beyond 2.5 or 3 rnA
present package power dissipation limitations to
most dual in-line packages.
By using external
resistors, the Type UDN-7180A driver allows
segment currents of up to 14 mAo
The transistor switch with current-limiting resistor
scheme use4 in Sprague gas discharge display drivers
also minimizes problems associated with gas panel
arcing which can destroy programmable current circuits. Some of the gas display manufacturers
recommend the use of series resistors in each segment
Through a collaborative effort begun late in 1973
between Sprague Electric and Burroughs Corp. a
newer, more efficient interface scheme evolved.
Featured in "Electronic Displays '75", this series of
7-3
D
APPLICATIONS INFORMATION (Cont'd)
1
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L
t-t±±±±~--=-==-++H+lhd-1aN-'61o
~~-L~J____V_SS~-L,VDD
-lay
a
a
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•
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~
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-40V
]j
L _____ ,
MOSTEK MK5017
216CH394X9PM
'----' -SOY
Flgur.3
-90V
~
-200V
~'-=-""~
----
1-----
-(
1
I
S
~;
I
I
216CKJ93X9NRA
-200V
D\I'G. NO. A-91113A
Type 206C ond 216C are single in-line networks
lNS8S2
(2)
Dca D4
D3
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t--
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:;N:~~
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7-4
lOOV
1-
W,"G.NO. A-.,75IA
Dl
APPLICATIONS INFORMATION (Cont'd)
line to prevent destruction to the semiconductor interface circuit should such a panel arc occur.
Without these series resistors (internal thin-film
resistors in Sprague devices) the Ie can be destroyed
by the high voltage and resulting high current should
the panel voltage drop to a very-low level during an
arc.
sity output as a steady 20 rnA in each of eight digits.
Of particular difficulty is the switching of currents
associated with the lower efficiency yellow and green
LEOs. Sprague has provided monolithic integrated
circuit solutions to applications requiring segment
currents of 350 rnA and digit currents of up to 1.5
amperes!
LED INTERFACE
Many of the Sprague Ies used in high-current LED
applications were originally designed for use with
electrocmechanical loads (relays, solenoids, motors,
etc:.) although the high-voltage ratings of the drivers
are obviously not a concern. A combination of highcurrent, high-voltage Darlington drivers is shown in
FigureS.
With the obvious abundance and variety of LED
interface integrated circuits it would seem unlikely
that there are still systems in search of an Ie hardware solution to further minimize cost, component
count, space, etc.; but this is definitely the case.
The deficiencies are chiefly related to the limited
number of current-sourcing circuits and/or highcurrent drivers.
The ULN-2074B source driver is utilized as a
modified emitter-follower. Through the use of
discrete diodes in the common collector line,
allowing the base to be switched to a potential higher
than the collector, it is then possible to obtain a
saturated output. This prevents the usual emitterfollower problems associated with gain, the MOS
output impedance, and power. It is also possible to
now better define the voltage at the emitter output
and to then provide suitable segment current-limiting
resistors for the LEDs.
The efficiency of LED displays has improved, but
with the larger digits (up to I" presently) most of the
Ie drivers are unable to switch the higher currents
required in multiplexed systems. The rule-of-thumb
generally applied uses the suggested d-c current multiplied by the number of digits in the display.
For example, a multiplexed display of 160 rnA peak
current will give approximately the same light inten-
DIGIT
SELECT
--l
~-r-------
I
---
I
1/2 UlN-2074A
OWl>. MO. A-9776B
FigureS
7-5
I
J
o
APPLICATIONS INFORMATION (Cont'd)
The ULN-2002A sink driver is a high-current
Darlington array with the capability of switching
multiplexed LEDs with an available limit of 155 rnA
for each of the seven drivers when used at a 100010
duty cycle. Even the more inefficient yellow or green
LEDs can be driven with higher output currents at
lower duty cycles (400 rnA at a 28.010 duty cycle).
A common-cathode LED configuration is shown
in Figure 7 for currents of up to 1.5 A per digit!
A series UDN-2980A source driver is used to switch
the segment side, the ULN-2064B or ULN-2074B to
switch the digit side. As has been shown with Figure
5, the IC package power dissipation must be considered with high-current applications.
A new eight-channel source driver is shown as a
digit switch for common anode LEDs in Figure 6.
The Series UDN-2980A drivers will handle output
currents to a maximum of 500 rnA. Two basic versions of the driver will allow interface from TTL,
Schottky TTL, DTL, PMOS, and CMOS levels.
Other versions of the ULN-2003A driver are also
available for use with the various logic levels.
The three examples that have been shown for LED
interface represent only a very-small portion of the
total applications area. The high-current capabilities
and high gain of the Sp~ague drivers represent potential solutions to many difficult LED display systems alphanumeric, seven-segment, or matrix; commoncathode or common-anode; continuous or
multiplexed.
Of the three sink drivers shown, the ULN-2003A is
probably the better choice from a standpoint of both
pinout and component count. It also has straightforward in-out pinning. The ULN-2031A and ULN2081A devices offer lower cost. They are also interchangeable from a pinning aspect although the output ON voltage will be dissimilar.
A-C PLASMA DISPLAY INTERFACE
Plasma displays, such as those manufactured by
National Electronics/NCR (USA) and NEC or Fujitsu (Japan), all have one common element with their
gas discharge cousin -both types use a neon gas mixture. The plasma panels emit an orange glow when
+V
1- - -
- -
-
-
,..---..----.----------r---t----,
1
1/4 UDN-2981A
I
I
DIGIT
SELECT
SEGMENT
SELECT
1 1
1__ -
_ _I
1_-
_I 1_ _ _ _ _ _ _
1;7 ULN-2081A -or-
1;7 UlN-2031A
Flgur.'
7-6
1;7 U LN-2003A
J
APPLICATIONS INFORMATION (Cont/d)
switched at rather high frequencies, and light output
intensity is a function of frequency. The a-c term for
the plasma display is something of a misnomer since
these panels actually operate from a toggled doC supply (usually in the area of 20 kHz).
both able to handle the application shown in Figure 8
(a basic doc, non-multiplexed clock interface rather
than a more complex multiplexed system). The
ULN-2022A is specifically designed for 14 to 25 V
PMOS logic levels while the UHP-506 is intended for
use with TTL.
The panel is basically a neon-filled capacitor, and
has plates (electrodes) which are covered with the
dielectric - between which is the neon mixture.
Switching this capacitive load presents a problem
with high peak currents in addition to the older
problem of the high voltages which are associated
with gas displays. Drive circuits use supply voltages
of 150 to 260 V (depending on unipolar or bipolar
drive), and the semiconductors used must switch instantaneous currents in the order of several hundred
milliamperes for the larger displays.
The high-current diodes that are internal to the
Sprague arrays are utilized in the unipolar drive
scheme connected to a suitable OFF reference.
In one POS application, a set of 14 ULN-2023A
Darlington drivers replaced more than 400 discrete
components. The cost and space savings in such a
machine are considerable, and a very complex printed wiring board was greatly simplified.
Further improvements in interface and plasma
displays will no doubt evolve, and thus benefit all
concerned - display and interface vendor along with
the end user. Plasma displays are well-suited to
custom panels (particularly those with various sizes
of characters) and with improvements in Ie breakdown voltages some further simplification of interface should evolve.
Several high-voltage, high-current arrays made at
Sprague Electric can provide an answer to one side of
the a-c plasma display interface. The Series ULN2020A Darlingtons are rated at 95 V while the Series
UHP-500 power drivers are rated at 100 V. They are
r - - - - - - ,..--"1------,---------.,.--t-----,
I
1/4 UON-2981/82A
1
I
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Figure 7
7-7
8~1363
APPLICATIONS INFORMATION (Cont'd)
FLUORESCENT DISPLA Y INTERFACE
potentials to be the same. The substrate and output
are tied to the most-negative rail, while the VDD
terminal connects to the -12 V line for the MOS.
Although the vast majority of fluorescent displays
are directly driven from MOS logic (handheld and
low-cost desk calculators), there is an emerging need
for interface integrated circuits for use with the larger
characters (higher currents) and the higher voltages
coming into use. These blue-green display panels
originated in Japan, and the manufacturers are quite
aggressively pursuing markets such as POS systems,
clocks, cash registers, appliances, automotive
displays, etc. Larger and/or more complex styles are
being made, including displays with alphanumeric
capability (a starburst 14 or 16-segment pattern).
Since these solutions using the older gas discharge
digit driver circuits require the use of appropriate
pull-down resistors, either in discrete or thick-film
network form, a more suitable solution employs the
circuit shown in Figute II. The UDN-6118128A
devices are designed specifically for use with
fluorescent displays and include· internal pull-down
resistors so that up to eight segments and eight digits
will require only two packages and a greatly simplified power supply. The Type UDN-61l8A driver
is compatible with TTL, Schottky TIL, DTL, and 5
volt CMOS. The Type UDN-6128A driver is for use
with 6 to 15 volt PMOS or CMOS logic.
The future of fluorescent displays looks rather
strong, particularly if competition further reduces
prices. For the moment at least, these displays will
not seriously tax the capability of IC interface except,
perhaps, from a price/cost standpoint.
Modest voltage capability (60 or 70 volts) is all that
is required of a semiconductor device to drive these
panels, .and the currents are in 20 to 30 rnA region.
These electrical requirements .are well within the
capability of many gas discharge digit drivers.
In Figure 9, the UHP-491 is shown used with pulldown resistors connected to each output. When both
the segment (equivalentto a vacuum tube anode) and
the digit (controlled by the grid) are switched sufficiently positive with respect to the cathode
(filament), the appropriate display digit/segment are
energized.
HOT WIRE READOUTS
Although hot wire readouts could easily be placed
In the incandescent category, their application in
multidigit, multiplexed display systems more closely
resembles LED circuit operation. Since hot wire
displays will conduct current in either direction, isolation diodes are required to prevent "sneak" paths
Another multiplexed configuration is shown in
Figure 10; the difference being that a push-pull type
of MOS output is in use, and the pull-down rail does
not allow the UHP-491 substrate, VDD, and output
260 Vp at 20 kHz
.260 V
I I I I
r iii I r i
rI r
100 K
r-----------+---~__t 1-82 V
1- - - - -
-
- -
- - - --I
SEGMENT'
SElECT
1
1
I
I
,
I
I
I
I
I
------
1;7 UlN-2022A
1/4 UHP-506
Flgur.'
7-8
APPLICATIONS INFORMATION (Cont'd)
a suitable, inexpensive diode array would be of considerable asset in multiplexed hot wire systems.
from partially turning ON unaddressed segments.
Compare the typical hot wire display of Figure 12
with the LED display of Figure 6. The availability of
b-O;
9
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d.....rl
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01
02 -<;
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-25 to -40V
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7-9
APPLICATIONS INFORMATION (Conf'd)
SEGMENT SElECT
UON-6118/28A
J1
9
q~O~'G~'~T~SE~liEC:T~L__~~~~~~~~~ ====~~~~~~~~=~=L
UDN-611B/28A
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-
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g;°3 --=~~;==i~::t=:-~---t;~~c>--l-°2
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Figure 11
1- - -
-
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-
- r---.----'--t-==--:....:::=-=:....::::-=:....:::-=~-=+=-=-=-.:;
1
1/4UDN-2981A
DIGIT
5eLECT
17l1LN-2031A
Figure 12
7-10
APPliCATIONS INFORMATION {Cont'd}
The nominal voltage for this type of panel is 250 V.
High-voltage gas discharge drivers (Series UHP-480)
or Darlington arrays (Series ULN-2020A) afford a
cathode interface to the glow transfer panel. With a
typical display current of 3 to 5 rnA, the gas
discharge drivers are perfectly adequate. For higher
current .. applications, the Darlington arrays are a
solution.
The hot wire readouts are available in both sevensegment and alphanumeric (16-segment) versions and
are quite well-suited to high ambient light applications. They do not wash out in sunlight,
although their reliability diminishes with the higher
currents required in brightly lighted applications.
As described, multiplexed schemes can be cumbersome because of the great number of discrete diodes
required. One avionics system using a 16-character,
16-segment alphanumeric panel required 256 discrete
diodes!
As illustrated in Figure 13, the bar graph cathode is
easily driven with aSeries UHP-480 driver. Signal
level shifting is inexpensively accomplished with
capacitors; the OFF reference, pull-up, andpuUdown is done with a few discretes. The anodes are
driven with two discrete transistors (BVCES~120 V).
By utilizing a n~gative supply, the level shifting is
easily done in the cathode side. If a positive supply
were used, relatively complex d-c level shifting would
be required in the anode side. The few discretes
necessary in the circuit shown are generally a viable
solution when faced with cost and space parameters
for the system.
GLOW TRANSFER - BAR GRAPH & MATRIX PANELS
Neon-based display technology has shifted into
many new market areas. The Burroughs Self-Scan@
is a solution to many alphanumeric applications;
the newer bar graph is a solid state replacement for
analog instrumentation. Both use the glow transfer
principle ofthe dot matrix Self-Scan display.
'N, 0----...,..,
Figure 13
SUMMARY
The phenomenal growth in display technology has largely come as a
result of the electronic calculator, and electronic displays will pervade all
our lives in an ever-increasing number of products·. The use of digital
displays in appliances, gasoline pumps, electronic games (even pinball
machines), etc., etc:, etc., will also require that a continuing evolution ofinterface integrated circuits meet the challenges of· higher brightness, increased currents, improved reliability, and lower system costs.
Both the display and semiconductor industries have demonstrated that
they will meet the challenges of today, and these challenges then become
routine with ~omorrow.
7-11
o
APPLICATIONS INFORMATION (Cont'd)
Electrical Characteristics
for Series ULN·2000A Darlington Arrays
Introduction
The actual package power dissipation is the sum of
the individual Darlington pair dissipations, each of
which is the product of the collector current, the output voltage, and the duty cycle.
With the tremendous industry acceptance of the
Series ULN-2000A high-performance Darlington arrays has also come a large number of inquiries relating
to their application and specifications .. A considerable
amount of applications material has been, and will
continue to be, generated as it can be identified, prepared, and published. It is now necessary to comment
on and further explain the devices' electrical specifications.
A typical example is:
3 outputs at 350 rnA at 35% duty cycle
3 outputs at 200 mA at 70% duty cycle
1 output at 100 rnA at 100% duty cycle
ambient temperature of + 70°C
Please note that much of this information is equally
applicable to the Series ULN-2000A and the Series
ULS-2000H; the major differences being the hermetic
package, the lower package power dissipation, and the
wider operating temperature range of the latter devices.
From the above equation, the allowable average
package power dissipation is
Po
Po
Po
Absolute Maximum Ratings
=
(150°C - 70° C)/(60° C/W)
(80° C)!(60° C/W)
1.333 W
The actual desired power dissipation is
Referring to the applicable data, under this heading
are limits that indicate potential impairment of device
performance and/or reliability if exceeded. The devices
are very conservatively rated and it should therefore
be noted that devices can often be specified (after factory concurrence) with improved limits. The most
common variation is increased maximum output voltage (for example 95 V) as is described under the Output Leakage Current section of this report.
350 mA x 1.6 V x 35% x 3 outputs = 0.588 W
200 mA x 1.3 V x 70% x 3 outputs = 0.546 W
100 rnA x 1.1 V x 100% x 1 output = 0.110 W
Total = 1.244 W
Since the actual desired power dissipation is less
than the maximum allowable, this set of operating
conditions is acceptable. Additional information on
the thermal characteristics of integrated circuits can
be found in Sprague Technical Papers TP 74-1 and
TP 74-4 and Microcircuit Application Report MAR
73-1.
Power Dissipation, PD
Still under the Absolute Maximum Ratings, the
power dissipation ratings and derating factor are specfications which often require some further explanation.
Output Leakage Current, ICEX
At temperatures up to +25°C, the maximum allowable average package power dissipation is 2.0 W. This
rather high limit is primarily as the result of going to
a copper alloy lead frame instead of the previous standard iron-nickel-cobalt alloy (Kovar) lead frame. The
total thermal resistance is only 60°CjW (thermal conductance of 16.67 mWrq. As usual, the maximum
allowable junction temperature is +150°C. The thermal equation is:
The first characteristic shown under the electrical
characteristics is the Output Leakage Current. This
characteristic is tested with the input open-circuited
for all type numbers, and then with an applied input
voltage for the ULN-2002A and the ULN-2004A.
Each Darlington output is tested at the rated maximum output voltage (50 V). The limit shown is the
total leakage current (collector-to-base, isolation, and
substrate). Collector-base leakage current is shunted
to the common emitter terminal through the 7.2 kn
base-emitter resistor, and will not be amplified by the
Darlington input stage. The power output stage also
has a base-emitter resistor, but its effects are somewhat
less.
Po = (TJ - TA)/Re or
Po = Ge (TJ - TA)
where Po = allowable average package power dissipation
TJ =
TA =
Re =
Ge=
=
=
allowable junction temperature (+ 150°C)
operating ambient temperature in °C
thermal resistance (60° C!W)
thermal conductance (0.01667 W rC)
The Type ULN-2002A and ULN-2004A are tested
with an applied input voltage to assure a specified
threshold level for each type.
7-12
APPLICATIONS INFORMATION (Cont'd)
The Output Leakage Current tests serve to guarantee the minimum output breakdown voltage. Any output which will not meet the leakage current limit either
has a breakdown below the specified test voltage, or
excessive leakage current, and is rejected. Customers
ordering increased or decreased output breakdown
voltage versions can also be served (Series ULN-2020A
devices are guaranteed to a minimum 95 V output
voltage).
1000
30o
.±~
c---
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)-\ /.
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100
;:;~~
0
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I
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VCE(SAT)
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-~
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:::;
1.0
After the Output Breakdown Voltage, the CollectorEmitter Saturation Voltage is probably the most important device parameter. The limits shown should be
used in determining the actual maximum device power
dissipation at the specified collector current and ambient temperature.
-
I-
o. IIYi
"."N(OFf]_-
-~-
The saturation voltage is also an indicator of the
minimum overall Darlington gain with the output well
into saturation (see also, the hFE characteristic for the
Type ULN-2001A). At 350 mA, the minimum "black
box" gain is 700; at 200 rnA, the gain is 570; and at
100 rnA, the minimum gain is 400. The gain of the
Darlington stage appears to fall off with lower input
currents due to the effect of the input base-emitter
shunt resistor.
0.0
I
--
l CEX
=/"- --'-0.03
Input Current,
. - f---
II ;
10
3.0
Collector-Emitter Saturation Voltage,
",'
t=
---
100
.~-.
-~--
200
300
----=
==
-- r---400
500
INPUT CURRENT IN pA
Series ULN-2000A Darlington Arrays
Input VI. Output Current
Note: Since this application report was published an increased
output current version (Series ULN-20 lOA) and the
increased output voltage version (Series ULN-2020A) have
been finalized. In addition, a new Type ULN-2005A has
been designed for use where higher source loading is not a
problem and high output currents are required.
IIN(ON)
This test is performed on all Series ULN-2000A
devices which contain input current limiting elements.
The input test voltages are not arbitrary specifications but are typical voltage levels as found in the
recommended normal applications for each device.
Generating the most inquiry has been the 3.85 volt
level for the ULN-2003A. The test voltage represents
an extrapolated maximum limit for TTL (high Vee
and maximum logic "I"). A standard TTL output is
fully capable of sourcing currents well beyond the
400 p.A test condition associated with its 2.4 V guaranteed minim!lm logic ,"I" output voltage. Unfortunately, this is not well defined by the suppliers. This same
lack of specifications is· also true for low-power
Schottky TTL with a 2.7 volt minimum logic "I"
output voltage.
Input Current,
I'N(OFF)
This test continues to be a topic of considerable discussion. Stated simply, it represents the level of input
current which will NOT produce more than 500 p.A
output leakage current at the high temperature limit.
The device will not turn "ON" with any input current
up to the specified minimum guaranteed limit. Beyond
the minimum, the circuit will gradually turn "ON";
the actual collector current being determined primarily
by the value of the input base-emitter resistor for low
values of input current.
If the logic output limits are still in doubt, either
consult the factory or use appropriate pull-up resistors
(input to Vee) to increase input current to the Darlington as described in Sprague Application Note 29304.9.
The specified minimum· input current corresponds
to a maximum allowable logic output leakage current
and is particularly useful when operating with open
drain PMOS.
All of the devices which employ input current limiting will safely withstand the continuous application of
as much as +30 volts on any input.
7-13
D
APPLICATIONS INFORMATION (Cont'd)
Input Voltage, VIN(ON)
Customers accustomed to standard discrete device
specifications frequently find our test methods somewhat unusual. Our intent is to describe a usable function without becoming bogged down in a conglomeration of trivial discrete device parameters.
The Input Voltage tests again illustrate the "black
box" approach to the application and testing of these
high-voltage, high-current Darlington transistor arrays, Like the Input Current test, the Input Voltage
specifications apply only to those devices which contain input current limiting elements.
Input Capacitance, CIN
The Input Capacitance specification describes all
capacitances associated with each individual input. It
is a composite of lead and wire capacitance as well as
the junction capacitance of the Darlington input. This
specification was requested by an early customer and
it was incorporated into the standard product.
With the specified maximum input voltage applied,
there is a guarantee of at least the level of collector
current listed, with a saturation voltage of not more
than 2 V.
As shown, the maximum Input Voltage for each
device determines the range of applications for that
device. Using the Type ULN-2003A array as an example; the minimum logic "I" output level for 7400
type TTL (2.4 V) will result in at least 200 mA collector current, the minimum logic "I" output level for
low-power Schottky TTL (2.7 V) will result in at least
250 mA collector current, a more realistic logic "1"
output level for TTL and most 5 volt CMOS (3.0 V)
will result in a typical minimum of 300 mA collector
current at an ambient temperature of + 25°C.
Turn-On Delay, tpLH
The Series ULN-2000A uses the industry-standard
method of specifying Turn-On Delay time. This characteristic is measured from the 50~{ point of the positive-going input pulse to the 50()0 point of the output
waveform when switching typical load currents.
Turn-Off Delay, tpHL
Turn-Off Delay time is measured from the 50%
point of the negative-going input pulse (trailing edge)
to the 50% point of the output waveform as the Darlington switches "OFF."
Variations in integrated circuit component values
can and will happen. However, this particular test
assures a minimum output current with a given input
voltage level. Device characteristics may change, but
this type of "black box" testing assures functionality
while allowing design and process variations from the
nominal circuit design.
Clamp Diode Leakage Current, IR
The suppression diode at each Darlington output is
tested at the rated maximum output voltage. This test
at reverse bias, and the following forward voltage test,
are equivalent to conventional tests on discrete diodes.
Applications requiring the paralleling of Darlington
inputs (either for higher output sink current or for
multiple loads) can be accommodated, provided the
logic current source is capable of furnishing enough
drive current. Alternatively, the use of pull-up resistors, as described in Sprague Application Note
29304.9, may be employed.
D-C Forward Current Transfer Ratio,
Clamp Diode Forward Voltage, V F
Each output diode is tested for its forward voltage
drop at a current level compatible with the Darlington
output sink capability. An application utilizing these
transient-suppression diode characteristics to perform
the lamp test function is described in Application
Note 29304.9 (Figure 6).
hFE
The Type ULN-200IA Darlington transistor array
is the basic device in this series. Although there is. no
input current limiting, a "black box" approach must
still be taken because of the effect of the input baseemitter resistor. Input current is shunted in this resistor and the minimum individual transitor gains must
be higher. The minimum gain of a device passing the
ULN-200IA specifications might easily be 2000 without the input base-emitter resistor. Here again, the intent is to provide function rather than meaningless
(although accurate) device specifications.
Summary
The intent of this applications material was to answer some common questions and to clarify some of
the. bulletin specifications for the Series ULN-2000A
high-voltage, high-current Darlington transistor arrays. Specifications can often be difficult to interpret,
especially when comparing discrete and monolithic
devices. Because of this, the Series ULN-2000A arrays
are specified as "black box" functions and tested
accordingly.
7-14
APPLICATIONS INFORMATION (Cont'd)
DTL Peripheral/Power Drivers
" A Giant Step Backward"
Reverting to DTL Adds New Dimensions To
Sprague Peripheral/Power Drivers
Introduction
Although not widely known in the industry, Sprague
Electric was one of the pioneers with Peripheralf
Power Driver ICs, withour Series UHP-400/500Quad
Drivers introduced in 1970.
The design and manufacture of a quad driver meant
rather dramatic deviations from any standard bipolar
processing/packaging/circuit design techniques in use
at the time. To allow the use of four high-current outputs in the same dual in-line package necessitated the
development of high Beta, high-current, high-voltage
output NPNs; chiefly done to minimize package power dissipation when. confronted with a quad 14-pin
DIP rather than an 8-lead dual mini-DIP driver. Reducing the Icc drive power for the output transistor
by improvements in high current Beta significantly
affected the overall package power.
40V507 SCHEMATIC
Figure 1
Electromechanical Loads
The Sprague Electric high-current, high-voltage
drivers have been designed primarily for use with
electromechanical loads. No attempt has. been made
to produce a high speed device; moderate switching
speeds result in less noise generation during output
transitions. Virtually all peripheral loads are .much
slower than any semiconductor switching device
and it is neither necessary nor desirable to utilize high
speed switching for interface to electromechanical
loads. Needs for decoupling and/or critical printed
wiring board layout are diminished with slower switching devices coupled with the serious attempts to minimize logic circuit power, 1,,(0).
Further it was necessary to utilize a copper alloy
lead frame for the DIP jf the units were to be used in
systems requiring the four outputs to be energized
continuously and simultaneously. The standard Kovar
(iron alloy) in use definitely would not allow this, but
the change to a copper alloy package frame reduced
the DIP eja Uunction to ambient rise) from +125°CfW
(Kovar) to +60°CfW (copper). The combination of
the high Beta process and dramatic improvement in
package technology permitted our quad power drivers
to simultaneously and continuously switch 250 rnA
in all four outputs in a + 70°C ambient without exceeding a junction temperature of +150°C.
High-Voltage, High-Current ICs
Many design and process changes were imposed to
create Sprague drivers. To obtain the high voltage
output NPNs, it was necessary to modify the N doped
epitaxial layer. The epi-Iayer has been increased in
both thickness and resistivity to provide higher output
breakdown. These changes caused these les to resemble linear circuit processing more than TTL digital
process techniques.
The Sprague Electric series UHP~400 and UHP500 Quad Drivers have been an industry standard.
The UHP-407j507 is shown in Figure 1. These ICs are
available with NAND, NOR, AND, and OR logic
gates and with three output breakdown minimums: the
UHP-400-1 series at 40 volts, the UHP-400-1 series at
70 volts, and UHP-500 series with 100 volt output
breakdown. Additionally, there are four basic relay
driver types which incorporate internal transient suppression diodes for use with inductive loads. All types
are guaranteed to sink a minimum of 250 rnA with a
VCEI.at) of less· than 0.7· volts and are. compatible with
TTL and DTL logic families.
Transistor design tolerances were quite dramatically
changed to sustain the much higher OFF voltages required of these circuit applications. Much deeper
junctions with greater curvature and rounded transistor diffusions (another element of the curvature) were
7-15
:{!'iIi!""'"
In "'"
D
APPLICATIONS INFORMATION (Cont'd)
The new DTL Series UDN-5700A are available in
a new package: the 16-lead copper frame DIP. Use
of this package was largely predicated upon the need
for all gates to have separate inputs, rather than a
pair connected (strobed) together, thus somewhat
improving the versatility of the quads. All the newer
plastic power drivers benefit greatly from the improved
eja of the copper frame package.
part of the design modifications for improving break-.
down voltages. Through use of these techniques it became possible to achieve breakdowns of 100 volts very
repeatably.
'
A combination design/process addition was also
instituted to minimize the output NPN saturation
voltage. The use of higher resistivity epitaxial layers .'
would have adversely affected the collector-emitter
VCE(.at) were it not for the use of a highly doped, low
resistivity collector diffusion. A low resistivity N +
coIi~ctor plug, which is driven sufficiently to contact
the N + buried (floating) collector diffusion beneath
the NPN base was added.
The new DTL types with their improved electrical
parameters will also be supplied in fully hermetic packages to MIL-STD-883 for use in adverse environments
or military systems reqUiring a full temperature range
unit and/or hermeticity. Some reduction in package
dissipation potential results, but the ease of interface
to logic families, such as CMOS, with the newer DTL
circuits will benefit those unable to obtain standard
TTL or CMOS logic with either sufficient output current and/or the high breakdown capability (80 volts)
of these ICs.
CROSS SECTION MONOLITHIC POWER NPH
"
Standard package power curves are shown in Figures 3A (plastic) and 3B (hermetic). The curves of
Figure 3A compare the two copper lead frame DIPs
with the capability of the Kovar frame packages Ilsed
for standard lower power circuits. Any area beneath
the appropriate package. curve represents allowable
average power and is plotted against ambient temperature to a +85°C limit. It is quite apparent that both
the mini-DIP at +80°CfW and the 14- or 16-lead
quad drivers at 60°CfW with copper frames are much
superior to the Kovar DIP with a rating of +125°CfW.
SUB.
Figure 2
Figure 2 shows the series collector resistance associated ,with the buried N + collector plug. Without
the low resistance collector diffusion, the s.eries resistan~e between the buried N + collector and the metallization on the chip surface would be much higher.
Through use of the N + collector diffusion, which also
serves as an N + surface guard ring to prevent unwanted inversion of the epi, it is possible to achieve
an R ,at of less than I ohm (very large, high-current
circuits) to a more standard 2 to 3 ohms collector
resistance.
The curves of Figure 3B apply to the hermetic packages used with the Series UHP-400 and UHP-500
quad drivers. Note that the materials' used and the
size of the package have a considerable bearing on the
package dissipation limits. The flat-pack is the poorest
orall and should not be used unless there is insufficient space (chiefly height) for the hermetic DIP. With
either type, the average power is reduced; particularly
if the ambient temperature is to reach +125°C.
Package Availability
The original Series UHP-400 and UHP-500 quad
power drivers have' been flJrnished to commercial/
industrial users in plastic DIP using a copper lead
frame, thus allowing use of all four outputs simultaneously and continuously at 250 mA each. Two types of
fully hermetic packages have also been furnished to
meet to MIL-STD-883: a 14-Iead ceramic DIP and a
14-lead flat-pack.
These eja rating curves show the maximum junction
temperature rise w'itha unit of power. applied. The
plastic packaged units are generally restricted to uses
below +85°C, while the hermetic devices may be used
up to +125°C. In either case, the upper junction limit
will not exceed a +150°C level and is shown by the
dashed lines extending to zero (0) power at +150°C.
Operating within these ambient temperature/average
power limits will insure that the junction temperature
does not exceed +150°C, since variations in manufacturing and electrical parameters are guardbanded.
Newer additions to this product family, the DTL
UDN.3600M and UDN-5700M dual drivers, are furnished in a copper frame 8-lead mini-DIP. The Series
UDN-3600M are interchangeable, pin-for-pin, with
competitive devices.
7-16
APPLICATIONS INFORMATION (Cont'd)
UHcfUHO 400/500 SERIES
UHo/UDN PLASTIC PACKAGES
20W i
J.!>W
r
,
o.~wL
50
85
150
'0
100
AMBIENT TEMPERATURE ("c)
AMBIENT TEMPERATUR£ (*C)
Flgur.3A
Figure3B
DTL Logic - "A Giant Step Backward"
Through ongoing evolutionary improvements, the
power drivers have seen a series of improvements; the
most notable a conversion to a DTL logic gate in the
Series UDN-36oo and UDN-5700. Other improvements have affected the high-current output NPN
and a small reduction in the typical Icc 0 power.
CATHODE
COM_ON
Converting the logic gate (Figure 4) to a diode input
(DTL) has brought about new potential applications
with CMOS and PMOS circuitry. Prime advantages
are associated with the much higher input voltages
allowed (JlP to 30V), and the extremely low logic "0"
input cill'ient (loo.uA maximumvs 1.6mA for a standard TTL). This comparison is between the new, improved Sprague DTL types and competitive devices.
The earlier Sprague UHP-400 family had an industry
low of 800.uA (1/2 TTL load) and that has subsequently been ,reduced further to a 1oo.uA maximum
(200 .uA on strobe inputs) thus allowing use with
CMOS and PMOS logic; while the competitive TTL
types have the standard 1.6 mA TTL maximum.
Lamp Interface - Inrush
!'STOva?12 SCHEMATIC
Figure 4
reach a value that is 1000% to 1200% of the nominal
steady-state current. This IO-12X the nominal can be
disastrous to lower current ICs, since they are unable
to sustain the instantaneous currents of a cold filament
and are prone to destruction; usually resulting from
secondary breakdown during turn-on of the output.
Curre~t
A technique frequently employed to obviate this
type of failure with lower current devices is the use of
"warming" resistors across the switching output.
Maintaining the filament partially warmed reduces
the inrush (surge) current in the transistor, but it
complicates designs considerably when a large number of lamps is used. The high current peripheral/
These IC drivers are well-suited to the switching of
incandescent lamps. Of great concern to those using
semiconductor devices for switching lamp filaments is
the high inrush (surge) current associated with cold
lamp filaments. When switched with either mechanical
or electromechanical switches, this inrush current~ay
7-17
w"
o
APPLICATIONS INFORMATION (Cont'd)
power drivers are able to sustain these momentary inrush currents; and, hence, it is not necessary to add
one "warming" resistor for each lamp.
Lamp Interface - D-C
Perhaps the most frequent application of these ICs
is the interface to aircraft type lamps such as the #327
and #387, both of which are rated at 28 volts and
40 rnA (Figure 6A and 6B). Usually two are connected
in parallel (reasons of redundancy) and run from a 28
volt d-c supply. As previously mentioned the full inrush is not likely to be reached due to the limitations
of the device output sinking capability and its modest
switching speeds (compared with TTL logic). Maximum inrush currents of 10-12X nominal are typically
reduced to a value approximating half that level (5-6
times steady state).
Sprague Electric power drivers have been widely
used since 1970 in systems employing them as lamp
drivers, and the most typical is a parallel pair of 28
volt, 40 rnA lamps (#327 or #387) switched by each
NPN output. Even though none of the standard IC
peripheral/power drivers available will be in saturation under conditions of lamp inrush, they have been
designed to sink currents of 300 rnA (well saturated)
and are able to sustain the momentary high power.
The transistor design and process chosen precludes
these drivers from failure due to secondary breakdown when used in a conventional manner.
Through the use of one of the relay driver versions
with its integral suppression diodes, a simple lamp test
may be accommodated without the need to use an
input on the logic gate. Figure 6A shows the use of
an input from each gate for lamp test purposes, but
the same function may be achieved using the suppression diodes switched to ground as in Figure 6B. By
switching the diode common cathode line with an
electromechanical or transistor switch the need for
the logic input is obviated; a scheme that requires
only one connection per package rather than four
(quads) or two (duals).
The current at which the output comes out of saturation is related to the transistor design (chiefly emitter
periphery) and process related variables: Beta of output NPN, diffused resistor tolerances (determine base
current of output), etc. As the graph of inrush current
shown in Figure 5 indicates, the time necessary to
reach a current level within the device saturation level
is less than 5 ms. Even assuming the use of two lamps
in parallel, which is the typical case (current value is
thus skewed by a factor of two), the outputs of these
power drivers need only sustain an inrush period of
approximately 2 to 3 ms (intersection at 0.12 A). The
newer DTL units, with a guaranteed output saturation voltage at 300 rnA are somewhat better than the
earlier UHP-400/500 series, although neither has given
trouble with inrush currents when used with #327 or
#387 lamps.
TYPICAL INRUSH CURRENT
vs
TIME WITH DESIGN VOLTS APPLIED
LAMP NO. 327
0
,
··
0.'
I
0
0.16
0,12
··
\
...... r-.
0.0
0
MILLISECONDS
Figure 5
Figure6A
7-18
APPLICATIONS INFORMATION (Cont'd)
Light output will be reduced somewhat when run
in a half-wave mode, as will the filament temperature.
It should still suffice for most ambient conditions excepting, specifically, sunlight.
An element of caution should be observed when
operating from an a-c source rather than a d-c supply.
The inductance of the transformer may produce voltage transients beyond the device breakdown level,
particularly when all lamps are switched OFF simultaneously. Use of such items as back-to-back Zener
diodes for clamping, a General Electric MOV*, or
sufficient capacitance across the supply to prevent the
transients will solve the problem. The capacitance required would be a function of the total lamp current,
but it should not be necessary to achieve any appreciable degree of filtering.
Figure6B
Preventing these inductive transients through use of
zero-crossing devices would be another more complex
solution.
Lamp Interface A-C (Half-Wave)
Lamp Interface A-C (Full-Wave)
Two potential configurations for operating the lamp
driver from an a-c source using only half wave rectification are given in Figure 7A and 7B. Either of the
two diode configurations is permissable and choice
largely depends upon whether a common ground exists in the system.
Inexpensive bridge rectifiers allow the approach
shown in Figure 8 and will provide greater lamp
brightness than the half-wave counterpart. In either
case, the simplicity of lamp drive without the need
for well filtered regulated power supplies is apparent.
Again, the same cautions pertaining to the transformer
inductance mentioned in the half-wave a-c section apply for full-wave rectification.
AC/HALF WAVE
AC/FULL WAvE
~~II[
o
Figure7A
AC/HALF WA.VE
UDN-5711
Figure a
II[
SolenOid/Relay Interface
The use of the integral suppression diodes originated in the Sprague Electric UHP-400/500 series of
relay drivers is shown in Figure 9. The newer UDN-
Figure7B
"Trademark
7-19
APPLICATIONS INFORMATION (Cont'd)
5700M dual and UDN-S700A quad peripheral/power
drivers all include high-current/high-voltage transient
(flyback) diodes·for use with inductive loads. The obvious advantage is the reduction in component count,
board space, and assembly costs that result when
choosing a Sprague Electric relay driver over a nondiode protected type.
'00
V~~4.75\1
.0
.0
'0
.0
20
IOOnAllyp)
S;IOO~A(mli.1
10
20
30
40
50
60
VOLTS
TYPICAL YCrx(t,UI} CURVE
Figure 10
Paralleling Outputs
Due to the excellent matching provided by monolithic IC processing and identical output transistor
designs, it is possible to parallel output/input combinations to allow higher current sinking as systems
necessitate. All four outputs may be paralleled with
results like those shown in Figure 11 for 2, 3, or 4
drivers in parallel. Current sharing is extremely well
matched, and the best choice for pairing would be
outputs on the quads across from one another (i.e.,
output pin 3 with output pin 11 with a UHP-400).
Figure.
VCEX(.u.) Curve
Operating inductive loads requires that any semiconductor sustain a combination of output voltage
and current as the load is switched OFF; a combination of voltage/current not required with non-inductive
loads. The collapse of the inductive load produces a
very non-linear "looping" load line. It is desirable
that it not intersect the device output breakdown
curve. The phantom of secondary breakdown creates
device failures when the voltage/current (power) combines with an excessive interval (time). Secondary
breakdown is a power/time related failure mechanism,
but the intersecting of a breakdown curve by an inductive load line is at times permissable. It is, however,
definitely advantageous not to have such an intersection (crossing) occur during turn-off.
/--4-/'-i-........
2 GATES
Ie mA
0.8
Figure 10 shows a typical VCEX(ml curve obtained
with the Series UDN-3600 or UDN-5700 Ie drivers.
In accordance with the Vcc notation, this curve is obtained with the supply equal to or greater than +4.75
volts. Inductive load lines vary greatly with load current and voltage and are difficult to include. The load
line of a solenoid or relay may be obtained by properly
connecting an oscilloscope to monitor load current
and voltage while repetitively switching the coil. Use
of a current probe to monitor load current (vertical
input) while applying the voltage waveform to a calibrated horizontal input will display the load line.
1.0
Yo.
PARALLEL OUTPUTS
Flguren
Logic Gate Power
The high gain transistor process used at Sprague
Electric has resulted in a considerable decrease in the
power dissipated in the logic gate which sources base
current for the output NPN. The collector resistor in
the TTL totem pole output is the determining component for the high current output. It is this resistor
7-20
APPLICATIONS INFORMATION (Cont'd)
in each of the gates which has a principal influence on
the power when the output is switched on (supply
current/output low). Figure 12A compares the Competitor A or B logic output (130 ohm resistor) to the
Sprague types (228 ohm resistor). It is this 228 ohm
resistor value in Figure 12B that decreases package
power substantially.
II
OUTPUT
OFF
ON
LOGIC GATE POWER
SUPPLY CURRENTS (MAX)
Flgure13B
SPRAGUE iJHP 400/500
®
Figure 12A
VON 3600/5700
Logic
"0"
Input Current - DTL Types
The reversion to a DTL logic gate with an allowable input logic level of up to 30 volts brings new dimensions to the applications for the newer dual and
quad power drivers. TTL circuits are difficult to use
in systems that have logic" 1" input levels beyond the
5.5 volt TTL maximum specified; but even more difficult to handle with many MaS devices is the maximum logic "0" current of 1.6 rnA for UDN-7400
TTL. Figure 14 compares the Sprague DTL 100 p.A
maximum types to the much higher (1.6 rnA max)
levels of the Competitor A and B types.
Figure 12B
The histograms of Figures 13A and 13B compare
the dual drivers furnished by Sprague, Competitor A
and Competitor B. Note that the output ON currents
of Competitive A and B circuits are either identical or
very similar but that both are considerably higher
than the Sprague equivalents. A small discrepancy
exists between the output OFF currents, but these are
of much less consideration than the output ON supply
current. The Sprague devices offer an obvious advantage of less heat and lower current supplies while providing the same functional capability for interface to
peripheral loads. Reductions in power (heat) can appreciably affect some system considerations (largely
power supplies) and/or improve reliability via lower
operating temperatures.
o
III
ouTPUT
OFF
ON
,
I
SUPPLY CUftRENTI (MAX)
LOGIC ·0· INPUT CURRENT
Figure 13A
Figure 14
7-21
APPLICATIONS INFORMATION (Cont'd)
PMOS Interface - DTL Types
With the exception of the probable need for a pulldown resistor (may not be required with some depletion load PMOS), the same basic considerations apply
to CMOS interface.
The combination of an allowable input voltage of
up to 30 volts and the 100 /lA input current for the
logic "0" state opens up new areas of simple, minimum
component interface with both PMOS and CMOS.
The open drain PMOS of Figure 15A shows the
technique for employing the UDN-5707 or UDN5712 with only an appropriate pulldown resistor for
each MOS output and a series Zener to obtain the
+5 volt Vee for the logic gate of the driver. The use
of a high voltage input diode (collector/base diode)
results in a vertical PNP to the substrate and accounts
for the dramatic reduction in logic "0" input current.
The input is actually a PNP, and the current (:s;; 100
/lA) being sunk in the driving device or puUdown
resistor is the base current of the PNP shown in Figure
158. The main element of the logic "0" input current
(Ie) is shunted to the substrate (ground) as PNP collector current (Ie); - another Sprague first in peripheral/power drivers.
CMOS Interface - DTL Types
The much lower input logic "0" current and the 30
volt minimum input breakdown afforded by a collector/base diode are a great asset for those wishing to
interface from CMOS to a high current load. In Figure 16 a typical CMOS to relay/solenoid scheme employs the UDN-5712 dual driver; a configuration operating from the CMOS supply of +12 volts. Use of
a simple series Zener diode of an appropriate current
rating will suffice for the Vee line if the +12 volt
CMOS supply is adequately regulated.
SECTION OF LOGIC GATE 510V5712
Figure 16
FIgure 15A
Systems with poor regulation may require a simple
regulator such as those shown in Figure 17A (NPN
power transistor) or Figure 178 (power Darlington)
to obtain the +5 volt Vee line. The choice is based
upon the input current required for the series pass
power device, and the effects upon the Zener power
rating under minimum load conditions (obvious advantage to Darlington). For CMOS logic systems requiring relatively few peripheral/power drivers for
high current interface either of these schemes or the
use of an appropriate three terminal regulator would
simplify system design, particularly if system +5 V
currents are small and little heat sinking is required
for the pass transistor or three terminal regulator.
Figure 158
Pulldown resistors for this type of application fall
within reasonable values, although the same is not
true of standard TTL inputs with a 1.6 mA input current limit. It would be necessary to use a 250 ohm
pUlldown with standard TTL (0.4 + 1.6 mA = 250
ohm), but the 100/lA of the Sprague DTL units will
allow up to 4 k fl. Even if this need for a 250 ohm pulldown is overcome, the maximum input voltage of 5.5
volts for TTL precludes its easy use with most MOS
circuitry operating above 5 volts.
Most PMOS circuits have a limited output source
capability and a problem results when the PMOS output is turned on. To properly operate a TTL or DTL
IC, its input must swing higher than 2.4 V; a serious
difficulty if a 250 ohm pulldown resistor is used (TTL).
However, when using the Sprague DTL types, it is
only necessary to source 615 /lA (2.4 V + 3900 ohms),
and should present little, if any, problem for most
PMOS interface.
Figure 17A
7-22
Figure 178
APPLICATIONS INFORMATION (Cont'd)
Extending Output Sink Current - DTL Types
IceD
The high current output NPN of all the Sprague
peripheral power drivers will operate beyond the 250
rnA guaranteed level (Series UHP-400 and UHP-500)
or the 300 rnA rating of the newer DTL types (Series
UDN-3600 and UDN-5700). The newer units are
better suited to use above standard output current
ratings, an improvement largely related to improvements in the output NPN design. Extending the 300
rnA capability requires additional base current and
consequently, the Vee line must be raised above the
nominal 5 volts. In Figure 18A, the increased minimum output current is plotted against the increased
Vee. Alternatively, it can be viewed as a maximum
increase in Vee to obtain additional sink current
capability.
J
il.16mA/V
(mavOIP)
I
lllOOmAJV
I
0.'1 t
5.15\1
A 50mAjo IV
•
1"I
40
,
I
"j
~
1 t
:;;/""
BO
l\.BmA!V
(maxj9Ol
"I ~
\max/OIP
~Ieeo
Iecl
(mlll,hutel
"j
'~leCI
(mox/gate'
Vee
YI
tee
Figure 19B
"~~mA
O.4~
400mA
Package Dissipation - Mini-DIPs
The eja rating of Sprague dual drivers in a miniDIP is +80°C(W, while the Competitor B specifications list all dual mini-DIPs at +110°C(W. Similar
ratings apply to other suppliers and the advantage is
to any type using copper alloy lead frames.
~ O.?"
',L__~__
o
0204
0.6
as
<_
1.0
The allowable average power, low at +70°C, is
definitely in favor of the Sprague DIPs. Contrast this
1.0 W maximum from Figure 20 (+80°C(W curve
intersects 1.0 W at +70°C) with a 727 mW limit calculated from the +IOO°C(W ratings listed by Competitor B (both limits are derived using max. junction
limit of +150°C and manufacturers eja rating). A
worst case analysis will reveal that the electrical specifications of competitive parts produce power levels
for 100% duty cycle applications that may result in
junction temperatures above the + 150°C level if both
outputs are simultaneously and continuously sinking
300 rnA with Vee at 5.25 V. The LM 3611 max. power
(per spec) could reach 782 mW (LM 3612, etc, slightly
higher) and the 75451 maximum is 761 mW (75452, I
etc. slightly higher).
•
12
VCE(SAT)
OUTPUT· EXTENDED SINK CURRENT
Figure 18A
1132mA/V
(max/DIP)
'" j
100
Figure 19A
O.5t
IceD
Isol
Figure 18B
Figure 18B indicates the maximum VeE(.al) changes
as the current is increased from 300 rnA to 500 rnA.
This information is necessary for calculations of package power dissipation if the system duty cycle presents
questions of average power.
D
Figure 19A and 19B present information relating to
the increased logic gate supply currents as a function
of the increased Vee required for extending output
currents. Figure 19A is for the dual types and presents
the information on both a per package change (.616 rnA/V) and a per gate maximum. The maximum
increase is presented for both Icc" 1" and Icc "0" and
the most significant is the Icc "0" which is indicated
in each figure on both a per package and per gate
basis. The change in Icc" l" is small (::; 1.5 rnA/gate)
and, to prevent confusion, is shown per package for
the dual only and per gate only in the quad graph.
Increase in Icc" 1" in quad types is 4X the per gate
maximum (4 X 1.5 rnA, or 6 rnA/package per volt).
The Sprague UDN-3611 or UDN-5711 will have a
worst-case power (same conditions of Vee and Ie) of
only 677 mW and is also manufactured in a DIP package capable of sustaining 1.0 W rather than the
727 mW limit. A clear advantage for lower junction
temperatures, less heat, and/or greater output capability in a system. Maximum junction temperatures
obtained would be: LM 3611 with 782 mW 156°C;
75451 with 761 mW =- 153°C; and the Sprague UDN3611/5711 with 677 mW
124°C.
=-
=-
7-23
APPLICATIONS INFORMATION (Cont'd)
STEPPING MOTOR DRIVE
1'-.
"
r-....
UDN-i5707
"-,c/'
.........
i
~
. ~~ ""',,- ""-,'
'.0
.
"-
0'
""
50
10
80
" " ',-
100
AhlBlENT rt:MPERATURE (·CI
SP,.AOUE VI NATIONAL
Figure 20
Figure 21
tive supply (a PNP switched by a gate capable of sustaining the supply voltage is one example), while an
appropriate peripheral/power driver is used to sink
coil current (Figure 21).
Stepping Motor Applications
Combining the use of a peripheral/power driver and
a dual Darlington switch (Type ULN-206l) provides
a capability of driving a 4-phase bifilar stepping motor.
Motors designed to operate with voltages and currents
compatible with these ICs may be driven with a minimum of components. In Figure 21, the signals from
appropriate logic/sequencing circuitry operate a
Sprague UHP-407 or UDN-5707 (may also be done
with two UDN-57l2 devices) for switching the motor
coils selected. The transient suppression diodes are
utilized in accordance with solenoid/relay applications, although here they are connected through a
Zener diode to the supply voltage. The Zener will improve the speed of the switching, but should be chosen
such that the maximum voltage across the output
(+V added to Vz) is below the device breakdown.
Permitting voltage excursions of this sort produces
improved high speed motor operation, but must be
clamped to a safe value.
The UDN-3600 and UDN-S7oo quad drivers offer
an 80 volt/300 rnA combination for each of four outputs: 80 volts x 0.3 A x 4 outputs = 96 watts.
Application requiring a holding or detent current
may employ a dual Darlington (ULN-2061). One
Darlington switch is used for the RUN mode, while
the second (lower) half of the ULN-2061 is used to
provide a lower holding current to maintain the position of the motor. Use of two supplies is shown and
diode Dl decoupJes the power supplies and prevents
unwanted reverse bias from reaching the STANDBY
Darlington. Similar schemes may be employed to obtain bipolar drive schemes for high-speed stepping
motor applications. Current is sourced from the posi-
All of these high-current/high-voltage peripheral/
power drivers offer simple, inexpensive interface solutions to some tough load requirements. Those. applitions beyond the output voltage and/or current handling limits of lower current, TTL type devices are
easily handled with these devices. The newer DTL
types provide solutions to interface problems associated with PMOS and CMOS that are quite often impossible with TTL type units. The "giant step backward" actually results in a "stride forward" with the
newer DTL peripheral/power drivers.
Control 100 Watts With an IC
The quad peripheral power drivers are capable of
controlling or switching loads that total 100 W/package (SO watts for duals). Load currents beyond the
standard 2S0 rnA level (UHP-SOO) or 300 rnA (UDN5700A) would result in the capability of switching
loads in excess of the 100 watt capability with standard specifications.
The UHP-SOO series has a 100 volt/2S0 rnA capability for each of four outputs: 100 V x .2S A x 4 outputs = 100 watts of control.
7-24
APPLICATIONSINFO.r.1ATION (CO,.rd)
Completely Monolithic IC Saries
for Gas Discharge Display Interface·
Introduction
the capabilities of diode isolatcii ICs, the voltage and
current requirements of the Panaplex displays, the need
for mininnzation of power (battery systems), packaging of the circuits, compon~nt count and cost, etc.
Add to this the po.tential for us~ with feedback controlled supplied, poorly resulated d~c supplies, the
wide variety of numbers of display digits, the range
of digit sizes (in use or contemplated), etc., and our
task was not to be an easy one.
The switching of the high voltages necessary for
display panels such as the Burroughs Panaplexilt has
long presented difficulties to the semiconductor industry - particularly to IC manufacturers. It is difficult
to fabricate devices capable of sustaining 200 volts or
greater with standard IC processes of today. Solutions
t6 the high voltage gas discharge display interface als.o
must be inexpensive as well as functional; this cost/
simplicity fa~tor prohibits most unusual or exotic circuit designs and/or IC processes.
Our direction was determined by two factors: a history of fabricating 130-140 volt PN diode isolated
display circuits, and a· more recent effort to utilize
compatible thin-film resistor technology. Thes.e factors, coupled with considerable expertise in de~igning
and processing high voltage ICs, dictated an approach
utilizing a split (± 100 V) supply. The split supply
would provide the 200 volts needed to ionize the display and the resistor capability would greatly aid the
iricorporation of functions previously done by discrete
components - including both input and output (segment) current limiting, pulldown (open drain PMOS),
pullup and pulldown reference for IC outputs, and a
high impedance voltage divider. for the output OFF
bias. All level shifting is accomplished via use of PNP
or NPN transistors, and the capacitors previously required were negated.
'
The earliest (and a great many recent) gas discharge
interface schemes used discrete components, but that
has been an increasingly cumbersome and expensive
solution. Competition at the systeIl1 level has largely
come from LEDs, and a great many standard ICsare
available for the smaller LEDs. In most instances, the
small.displays have gone to LEDs. However, the larger
display applications are still an opportunity for gas
discharge since character size and cost are not directly
related. The cost impact upon the potential for gas
discharge displays in many systems is a function of
interface complexity and cost, and it was to this end
that a joint Sprague/Burroughs effort was launched.
Early Sprague/Burroughs meetings were held to define the relevant factors involved in such a program
and provide the necessary insight for both parties into
D
Vss
Figure 1
MOS
LOGIC
7-25
APPLI(A;TIONS INFORMATION «(ont'd)
Basic Scheme
Replacing discrete components through incorporating their function into this IC series results in
the block diagram of Figure I with its basic requirement for a single digit and single segment driver; a
scheme capable of driving as many as eight digits and
the eight segments. Additional digits or segments beyond the eight provided in an 18-lead DIP may be
driven by combinations of packages beyond the
minimum two necessary. Example: three ICs - two
digit and one segment - will fulfill the needs of a 12
to 16 digit calculator.
and one-half of the pull-down for open drain PMOS
is the function of Rs; R6 adds the second half of the
pull-down to the ground buss. The protective value
of R4 and Rs must be noted; a junction failure in QJ
has the two resistors asa current limiter to the MaS
(or TTL) output and will minimize the likelihood of
destroying the low level logic outputs.
Input transistor Q4 is a high voltage inverter and
sinks the base current of PNP Q3' The current sink
Qs' Rg, D2, and D3 is common to all stages and serves to both minimize power (influence of battery applications) and to maintain PNP base current sufficient for saturating the output Darlington While
being independent of power supply variations.
Included in this series of high voltage interface are
three digit driver packages: UDN-6144 (4-digit),
UDN-6164 (6-digit), and UDN-6184 (8-digit). Segment drivers include the UDN-7180, UDN-7183,
UDN-7184, and UDN-7186, and the four offer
current ranges compatible with display sizes from
0.2~0" to I" panels, and others will be made available
as needs are defined.
A positive input (4.~ to 20 V) will turn on Q4 and
this base current (6~ flA typ.) for PNP Q 3 will turn
on the output Darlington (QJ and Q2) and source
digit current. The typical current of 6~ flA is defined
by the current sink Qs, D2, and D3, and Rs is to
enhance battery life in portable (hand held) designs.
Dig It lnterface
The digit driver is the more complex of the two and
its schematic is shown in Figure 2. Input address
polarity is positive (active high in TTL parlance) and
the circuit is designed to interface from TTL (4.5
volts from open collector - or using pull-up to
Vee), CMOS, PMOS, etc. Input current-limiting
Resistor R7 is the output pull-down connected to
the off voltage buss from the pull-down shunt Q6 and
Q7' Q6 and Q7 are needed to shunt the current in a
pull-down resistor to ground and prevent excessive
shifts in the level developed by the voltage divider
RJO and R J1 . This voltage divider sets up an ON to
ELECTRICAL CHARACTERISTICS: TA = +25°C, V KK =, -110 V
(unless otherwise specified)
Charactenstlc
Output ON Voltage
UDN·7183/84/86A
Uutput ON Voltage
UDN·7180A
Output OFF Voltage
Symbol
VON
VON
Vo"
Output Current
(lliMITING)
Output Current
(lsENse)
Input High Current
ION
Input Low Current
III
Supply Current
IK'
ION
I'H
Test Conditions
All Inputs at 6 V'
All inputs at 6 V', VK. - . 70 V
All Inputs at b V',
ION ~ 14 mA
All inputs at 0.5 V,
Reference V.K
All inputs at 15 V, VK. 110 V,
Test output held at -60 V
All inputs at 0.5 V, V•• 110 V,
Test outputheld at -66 V
Test input at 15 V,
Other inputs at 0 V
Test input at 0.5 V, One input
at 6 V', Other inputs at 0.5 V
All inputs at 0 V
Test
Fig.
UON· 7180/83A
Min. Typ. Max.
I
1
-100 -104
66
·105 . J08
2
3A
84 76
UDN·7183A only
1475 1850 2450
38
-95
4
-
200
5
6
-
I
125
'Specify input voltage ~ 4.5 V for devices with "·5" suffix.
NOTES:
1. All voltage measurements are referenced to pin 9 unless otherWise specified
2. All voltage measurements made With 10M!!, DVM or VTVM,
3. Recommended V•• operating range: -85 to -110 V.
7-26
-
-120 -155
UDN·7184A
Min. Typ. Max.
UDN·7186A
Min. Typ. Max. ~nits
-98
-102
65
-
-97
76
84
-
76
84
440
550
910 1140 1520
-100 63
V
V
V
-
V
725 p.A
-1J5 -50 -65 -90 p.A
-65
-85
275
-
200
275
-
200
275 p.A
10
175
-
1
10
175
-
1
125
10 p.A
175 p.A
125
APPLICATIONS INFORMATION (Cont'd)
PARTIAL SCHEMATI C
Of~E OF FOUR DRIVERS (UIJN-6144A)
COW40r~
R
ONE OF SIX DRIVERS (UDN-6164A)
ONE OF EIGHT DRIVERS (UON-6184A)
BrASING NETWORK
1----------- ------------,
10
7
GNO
D"'6. fto. A-&611-7
Figure 2
Segment Interface
OFF voltage swing of approximately 213 the difference between VBB and ground. This adequate
swing prevents problems associated with past attempts at 'direct MOS drive' - problems quite frequently the result of inadequate voltage swings
.
available from the PMOS LSl.
The segment driver circuit is shown in Figure 3 and
.the value of Ri (segment limit~) is determined via
masking for the appropriate display current. Its
counterpart pull-up resistor RI is also changed to
some known (atio of R2 • The ground terminal (#9) is
referenced near, or connected directly to ground, and
the VKK line is typically a - 90 to· - 100 volts.
Consistent ionization and extinguishing of the
display panel is the result of the 60-75 volt swings
available from both digit and segment ICs .. The conditions that previously created problems for the
'direct MOS drive' with minimal swings at the output
have been veO' adequately handled with the increased
output swingS of the 610017100 series. Problems
from leading zero blanking, low temperature, low
ambient light, etc. which previously gavedifflculty
are well taken care of with this series of ICs.
The input PNP (QI>' serves as a ievel translator and
provides doc level shifting to the output Darlington
(Q;1 and Q3)' Emitter resistor (R3) both limits the input current and furnished pull-down for open drain
PMOS. An added intent is the measure of protection
funushed the MOS by the very high impedance of
R3•
The basic switchilig function is the combination of
PNP QI' Darlington <;'h and Q3' and the associated
resistors R I , R2, and R3. Address polarity is again
active high. The input may be.raised a maximum of
20 volts above ground arid will function with input
levels obtained from CMOS and open collector TTL
(4.5 V).
The 'housekeeping' currerit resulting from the very
high impedance voltage divider (typ; R9 + RJO ==
1.3 MQ) is low, and aids the use of these ICs in battery or low power applications.
7-27
D
.
APPlI(ATIONSINFORMATION «(ont'd)
PARTIAL SCHEMATI C
~;,u-;-
I
I
- - - -0-;:';;-:' l
1
18
I
I
I
I
I
"3
I
I
"8
-IKK
10
I
COMMON >;IASINC NETwORK
~O.!!E_O~IZ.HT3R:'::E~
Figure 3
TYPI CAL APPLI CATION
Figure 4
7-28
_-'
APPLICATIONS INFORMATION (Cont'd)
pieces, and the board layout is straightforward and
uses single-sided board.
The OFF output biasing network is common to all
the individual drivers with the level of bias determined by the ratio of R7 to the total of R7 and Rso
As in the digit driver, the value of output bias is :::::213
the voltage across VKK and ground - thus insuring
sufficient 'on to off' swings to properly fire, and effectively extinguish unaddressed segments during a
scan. Emitter follower Q4 and Qs sources current to
the pull-up buss connected to the various outputs as
they are turned on during the display scan.
Many calculator interface schemes use considerable numbers of components (70 to 100
typically) to drive gas discharge panels. As one
example: a twelve digit/eight segment machine uses
85-90 discretes while the new IC version uses only
three packages, and results in less space along with
considerable simplification. Other applications will
benefit similarly with this series of circuits.
Minimum Component Interface
Summary
The impact of this new product family may be seen
in the typical digital clock of Figure 5. This a-c
powered clock uses a Mostek 50250 clock IC, a
UDN-6164 digit driver, and a UDN-7183 segment
driver. Total component count is approximately 30
Display technology and usage has emerged at a
mind boggling rate in the past several years - largely
due to the fantastic growth rate of calculators. The
planar gas panels have been an integral portion of
this burgeoning market, but like all the other displays
I'N5SS2
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Figure 5
7-29
""
"I
APPLICATIONS INFORMATION (Cont'd)
available does not meet the requirements for an ideal
display.
Gas discharge panels are a fine combination of
aesthetics, reliability, low cost, large character size,
multiplexing capability, etc., but have been impacted
to some degree by the lack of an available and inexpensive, totally monolithic interface. The move
toward Ie interface for displays has stifled some
potential- largely in favor of LEDs; although many
applications requiring large characters and/or in
high ambient light turn toward gas panels. The
planar gas discharge display is a long way from obscurity, and the availability of this family of les
should open up new areas as well as satisfying
existing systems.
The intent from the inception of this program has
been to produce and provide a standard, inexpensive
and easy to use interface for gas discharge displays.
A great many potential applications exist for these
circuits in consumer and commercial products. From
the calculator and digital clock areas this product
also will find use in automOtive dashboards, pointof-sale systems, electronic cash registers and scales,
and instrumentation. The market for displays is still
very elastic, and many applications for gas discharge
panels are continuing to appear. The Sprague contribution to this market is this series of state-of-theart interface les.
'
7-30
APPLICATIONS INfORMATION (Cont'd)
Augmenting the IlP LSI Revolution
with New Power Interface for Peripheral Loads
Introduction
ULN-2064/2074 Quad Darlington
It is a foregone conclusion to now state that the
Originally this quad l.5A (max.) Darlington was intended for interface to peripheral loads such as solenoids, relays, and small motors. By virtue of unsatisfied needs for high current buffers for LEDs, incandescent lamps, and other low voltage loads, additional
systems applications continue to evolve. MUltiplexed
LED applications have arisen in which the strobed
current was 1.0 to 1.4A, and the ULN-2064 or ULN2074 has provided the only IC solution.
microprocessor will have a profound effect upon the
electronics world; we are already into another revolutionary era. Random logic LSI has had an enormous
effect upon "component shrinkage" in computing and
control systems, and even to "insiders" stretches the
imagination. Although the !,P is not yet a mature
product, it has been and is being designed into a
myriad of new products. In many instances, the systems have never previously utilized any semiconductors, while in a great many others the product (system)
has never existed in any form. Functions which had
previously been difficult or impossible to implement,
particularly economically are rapidly surrendering to
the onslaught of the !'P, PLA, or custom LSI devices
now available.
In Figures lA, IB and IC, the basic Darlingtons
are shown; a redesign effort has added other versions
which will provide interface solutions for 5V CMOS
with its very low current handling capability to 1.5A
loads. The standard types in this series are guaranteed
to sustain a 50 volt breakdown; although new part
types are being added for breakdown selection to
other limits, thus satisfying applications outside the
normal SOV limit.
The revolution in control/calculation capability resulting from devices such as the I'P and PLA is bringing about an increasing need for further evolution
(with perhaps an occasional revolution) in many other
areas. Systems are becoming smaller while also incorporating additional functions; becoming more reliable
while becoming lower in price; more versatile while
becoming more complex; and operating at higher
speeds while also interfacing to electromechanical devices. Some of this represents a bit of a paradox (i.e.
improved reliability at lower costs), but the dynamic
nature of the semiconductor industry is continuing to
bring about dissolution of old concepts of function,
reliability, and cost.
A version to allow interface directly from PMOS
and l2V CMOS logic is being added; the ULN-2066
incorporates a higher input resistor than the ULN2064 and limits the current from the MOS logic output to a value which allows use with many MOS ICs
while simultaneously providing adequate input current
for high currenlloads (Figure 1B).
The loading of the logic circuitry is of considerable
concern and the V,N/T,N curves of Figure 2 and Figure
3 indicate the input limits over a range which corresponds to normal application. Figure 2 is for the ULN2064/2074 versions with a nominal input resistor of
350n (increased from original value of 2301l), and is
designed to switch high currents when operated from
"totem pole" TIL or LS TTL. For 5V CMOS ICs
with limited source capability the ULN-2068 type
(discussed later) should be a better choice, although
the use of pull up resistors may be employed to satisfy
the necessary input current for the load.
At Sprague Electric an evolution of interface ICs is
underway to provide answers for lower speed applications such as electromechanical peripheral loads and
electronic displays. Few of the newer interface lCs at
Sprague Electric are oriented toward "jellybean" IC
markets, but rather are designed to displace discrete
components in tough applications. Most of the activity is based upon high current or/and high voltage interface circuits and will extend our product leadership
in these areas.
7-31
D
APPLICATIONS INFORMATION (Com'd)
PARTIAL SCHEMATIC
I
I
i
I
I
7.2K
I
I
m
0IiG. 110. A.. 10. 353
ULN-2064B }
R'N
ULN-2065B
3500
=
ULN-2066B }
ULN-2067B
R'N = 3kO
DWG. 110. A-9765~
Figure 1A
DWG. MO. A-9766A
Figure 1C
Figure 18
14
12
ULN-2066/678
UlN-2076/!78
~
10
_0,
,
..
J.,
1
E
0,
8
~
6
::>
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!'
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/
....
./
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io"'"
....-- ;..- V
.",.
INPUT VOLTAGE - YIN
./
,,~~.
./
~
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..........
.....
..........
.,.-....
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-
--
.---
10
INI'UT VOLTAGE - VIN
"
12
M.HO. A-IO,S6S
Figure 2
Figure 3
The low current capabilities of many MOS devices
necessitated further evolution which has resulted in
adding a third NPN to these high current buffers. The
intent is to provide a high current interface, which in
some instances requires less than IOOILA input current,
while offering output capability to l.5A. It is difficult
to provide any graphical analysis of MOS interface,
Figure 3 is the input current curve for the ULN2066 and is intended for PMOS or CMOS applications. For MOS lCs which do not provide sufficient
source output currents the use of the pull up resistors
is required, or an alternative is the use of the ULN2070 (another three stage buffer like the aforementioned ULN-2068 - shown in Figure 4).
7-32
APPLICATIONS INFORMATION (Cont'd)
Determining the worst case (minimum) input current is necessary to assure that the output is well saturated. Although there is nonlinearity due chiefly to
to beta rolloff, the graph of Figure 6 will insure the
output sinking capability is matched to the input
drive. The input current origin is skewed to compensate for the effects of the shunting resistors across the
EB junction of the ULN-2064, ULN-2074, etc. types
which do not incorporate the additional (third) NPN
stage.
PARTIAL SCHEMATIC
RS
.
i
..;---+---oc
o
o
7.2K
o
o
:
m
DWG. 110, A-10,351f
ULN-20688
ULN-20698
}
ULN-20708
ULN-20718
}
RON = 2.5ko, R. = 9000
RON
=
11.6kO, R.
=
3.4ko
.,...".,--
U'N_,LM
U'N-'
7 V....---:-
l
"
ULN-2065/67a
fJ7l
Figure 4
i9
~
0
~
~l
particularly due to the vast range of MOS source capability, which ranges from less than 100j.lA to well
above the milliamp level. While TTL specs are quite
well defined, a useful approach to MOS applications
is to use the worst case equivalent output Z for the
particular device. Source outputs (CMOS and PMOS)
are spec'd for given current and voltage conditions
and a series circuit can be depicted much like Figure
5-. Use the output voltage/current levels for the particular device to determine its suitability; VON + lOUT =
Output Z (max).
.f
l
/
/
"
K
ULN-2061M
ULN-2064/668
UlN-2074;768
j
0
i
I
'.0
'.0
INPUi
~URRENT
3.0
IN .. A _ I,
Figure 6
Allowable Power
ULN 206412066 etc.
Z(MOS)
An obvious concern with such high current ICs is
the allowable combination of outputs ON, the output
load current, and duty cycle. The "B" type of plastic
DIP with its copper lead frame is used for this series
and offers a thermal resistance (eja) adequate for
many applications, and may be improved further
through use of heat sinking.
ULN 2068 etc.
In Figure 7, the plot of output current, number of
outputs, and duty cycle for a +70°C ambient is shown.
As in earlier, similar graphs it conveys:
(a) Allowable doc current; intersection of the 100%
duty cycle (i.e. c: 500 rnA for 3 outputs simultaneously).
(b) Allowable duty cycle with a given output current.
(c) Allowable output current for a given duty cycle.
R IN
~
CIRCUIT EQUIVALENTS
Figure 5
7-33
D
APPLICATIONS INFORMATION (Cont'd)
supply voltage, and TTL output level. This is useful
information for designers opera ling with 7400 or 74LS
families, but obviously cannot be guaranteed since we
have no control over another vendor's devices. The
minimum input current is extremely important for interface to high current loads, and the user can empirically corroborate the indicated !n.,jVn< levels for TTL
logic. liN corresponds to the lour for the TTL; and Vour
equates to the VOUT logic" I," or V,N for the Darlington.
DJCE lIJr
\'
'\
~
~
".""- "- .....1""-
~
2
~~
"
~ "'j"-....
,/
~
NUMBER OF OUTPUTS
CONDUCTING
SIMULTANEOUSLY
!
~~
,
j"-....
r---r- ~
......
-
Ulr2064 rRU Ul,-2077
o
o
20
40
60
I"-
Solenoid Drivers
80
PER CENT DUTY CYCLE
A large portion of the ULN-2064 series ICs are for
solenoid, relay, or motor interface. Use of the types
with suppression diodes minimizes component count
while allowing use with inductive loads as in Figure 9.
The usual concern for power dissipation, input current, etc. should be exercised for these applications.
100
DWG. MO.
~~to.
360
Figure 7
Input I - TTL and LS TTL (ULN-2064/74)
Although it is not well recognized, the outputs of
"totem pole" TTL and Schottky TTL are capable of
sourcing current well in excess of the 400!,A (at 2.4V
min logic" 1") that is part of TTL specs. If it is not
necessary to maintain the proper logic" 1" level of 2.4
(or 2.7 volts) the output may be more heavily loaded
via a lower impedance, and the result is higher input
currents for the ULN-2064j2074 type of IC.
+V
r-------
-
-
-
-
-1
I
In Figure 8, the enclosed area indicates ULN-2064/
2074 operation with TTL or LS TTL and the normal
variations of Darlington input resistor value, logic
I
I 1/2
UlN~2064A
1...
__
_ _ _ _ _ _ _ _ _ ._
14 r-------r-----T-------r------~---~------~~~
-
I
--~
D'IIi3. tlO. A-9775A
-~
12
r---~r----+----~----+_--~--~_+--__;
10
r---~r----+----~----t_~~----_+--__1
Figure 9
,
""~
E
a~
8
6
I----+----+.'f:~
LED Interface
~
~
Figure 10 shows the ULN-2074 used as a source
driver (digit driver) for common anode LEDS; this is
a quasi-emitter-follower with the collector common
being biased by the discrete diodes shown. Using such
a scheme allows the base (input) to be pulled above
the collector potential and provides a much better solution than a true emitter follower which is subject to
the variables of gain, changes in load current, and the
ranges of MOS output impedance.
1.5
INPUT VOLTAGE - VIN
OWG. 110. A-IO,363
Figure 8
7-34
APPLICATlONS'INFORMATION (Cont'd)
In Figure 11, the ULN-2064 series is again shown
as a digit switch; here it is used as a sinking output
with common cathode LEDs. Using such a combination allows an easy interface to high cursent, MUXed
LED displays of large digit size, many digits, or low
efficiency (green and amber types).
VSS
DIGIT
SElECT
-I
Sink/Source (Bridge) Circuit
I
1
The combination of a ULN-2068 high gain buffer
and a ULN-2981 source driver offers a solution to
bipolar (bridge) drive schemes. By paralleling inputs/
outputs of the ULN-2981 IC driver it is possible to
switch load currents of IA with the basic configuration of Figure 12. While Figure 12 shows a 5V CMOS
interface, the same prospects are available with PMOS,
TTL, or DTL ICs.
II
1
L-f------- ---
1/2
1
ULN-2074A
j
Other potential solutions will be forthcoming with
the introduction of the ULN-2840 series of drivers
which may be used as source or sink drivers (a packaging configuration change).
Figure 10
O\IIG.NO. A-9776B
'v
1- - - - -
-
- r-----T-----.r------=-=-=-~-__=_+=-=-=___;
1
1/4 UDN-2981/82A
I
I
I
I
*
,
D
Figure 11
1
I
I
I
1_ _ -
____
1/4 UlN-2064j748
1
1
1_ _ _ _ _ _ _
1/4 UlN-2064j748
DWG. NO. 8-1363
7-35
J
APPLICATIONS INFORMATION (Cont'd)
v,
..--_--._.()c
:
RIN
I
!
SUB
10K
7.2K
3K
Figure 13
BIPOLAR (BRIDGE) DRIVE
Figure 12
UDN-2956/2957 Relay Drivers
Although chiefly intended as interface to telecommunications relays and similar loads, this source driver has additional areas of application. Shown (Figure
14) is the basic circuit which functions as a PNP driver,
and utilizes the NPN stages to provide adequate current gain. The enable pin must be high (;::: S.OV for
UDN-29S6 and ;:::2.4V for UDN-2957) for operation
of the outputs; while a low or logic "0" on the enable
pin inhibits all outputs.
UDN-2840 Series (Figure 13)
The prospects for this circuit are not well defined
as yet, but it will offer solutions to high current applications presently being done with discrete components.
Through packaging options it will operate as either a
source or sink driver, and will have the same basic
electrical parameters (1.SA and SOY) as the ULN2064 family.
r
R '" 10 ,5 k.n. for UDN-2956A
R'"
2.5 kJl.- for UDN-29S7 A
I
I
I
ONE OF FIVE DRIVERS
-----,
INPUT
1
I
I
UDN-2956A ONl\
ENABLE
GROUND
SUBSTRATE
8}------~----''----+-------,__---
L _ _ _ _ _ _ _ _ _ _ ...J
SUB
[)W6.NO. A·IO.2'11B
Figure 14
7-36
APPLICATIONS INFORMATION (Conl'd)
These source drivers are capable of switching currents to 500mA (max) and sustaining OFF voltages to
a max of -80V. The UDN-2956 has input limiting
designed for MOS applications, while the UDN-2957
is intended for TTL, LS TTL, and 5V CMOS applications.
PIN INTERFACE ISOURCE TO GND
+1010+12'1
The minimum TTL logic "I" level of 2.4V guarantees a source current of -IOOmA for the UDN-2957,
and the output voltage will be less than -1.1 V under
these conditions. Similarly the UDN-2956 will source
-IOOMA with an input potential of +6V and VON
will not exceed -1.1 V. Higher output currents are a
function of increased input voltage and greater input
currents.
UON 2957
An interface for common anode LEDs is shown in
Figure 15; the UDN-2957 is shown as a digit driver
operating with CMOS logic. In this configuration the
DIP ground (pin 7) is connected to a positive supply
to allow the IC to operate as a source to ground. A
variety of Sprague Electric arrays are prospects for the
segment side; these include the ULN-2031, ULN-20BI,
ULN-2003 or ULN-2004 types, all of which incorporate seven drivers per 16-lead DIP.
Figure 16
A similar prospect is the UDN-2957 sourcing from
ground if the PIN diode supply is a proper negative
voltage (-3 to -5 volts), the same pulldown to the
-80 volt maximum applies. Military applications of
the UDN-2956 or UDN-2957 drivers as PIN diode interface may be served by hermetic, 883 versions of
these types.
Considerations for output current, duty cycle, and
ambient temperature are shown in Figure 17. As is
being done with other Sprague Electric power interface the allowable conditions of duty cycle, output
current, and d-c operation are shown for various combinations of outputs activated. The curves of Figure
17 are for plastic DIPs (copper lead frame) for an
ambient of + 70°C.
COMMON ANODE LED INTERFACE
NUMBER OF OUTPUTS CONOUCTING
D
Figure 15
Another sourcing interface is shown in Figure 16;
again the DIP ground pin is shifted to a positive supply for interface to a PIN diode. With open collector
TTL or 12V CMOS the UDN-2957 will again serve
as a source driver to ground. The output is pulled
down in the OFF condition by Rp and the PIN diode
forward current is limited by R L•
Figure 17
7-37
APPLICATIONS INFORMATION (Cont'd)
'!J
A4
~:rn
rr{~r
,~
""'''''' i
110
ImA:
I
LO
4J/1-e::
0.'
•
VIA
,0
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'4
10
I
V __.-- -1 --
-------
TYP-tJ--V-
~--
"'" ~
!,.;"
;--
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...
Vln
...
•..
"0
UDN-2980 Series Source Drivers
Customer inquiries for a source IC to complement
our highly successful Series ULN-2000 Darlington
Arrays have resulted in another high current device;
the UDN-2980 series is an 8-channel array for general
purpose high voltage/high current sourcing applications. Output loads range from LEDs, relays,
solenoids, stepping motors, lamps, etc. which operate
within the electrical limits of the device and the thermal
limits of the package.
Use of the UDN-2957 with TTL or Schottky TTL
(LS TTL) will produce input voltage (logic output "I")
and input current (logic" I" output loading) limits as
typified in Figure 20. It is not possible to guarantee
other manufacturers' ICs, but the totem pole outputs
of the 7400 and 74LS families will not be excessively
loaded by the UDN-2957A. With the input Z of the
UDN-2957 the minimum logic "I" level of 2.0 volts
for TTL should be maintained without a need for additional pullup resistors.
,:
V
V
Figure 19
The loading of the logic outputs is shown in Figures
18 and 19. The UDN-2956 V,,,/I,,, curves are shown
in Fig. 18; the same information for the UDN-2957A
is indicated in Figure 19.
w,)
CmA)
0.0
Figure 18
V
~
lin-
t---
v/ I
•
~957A
LO
0.. t--- 1MAX/1
~L~~V
71
ueN
L
Two output voltage limits are available; +50V
(min) for the UDN-2981 and UDN-2982, and +80V
(min) for the UDN-2983 and UDN-2984. Outputs are
spec'd for a recommended current of -350mA, while
a maximum limit is -500mA per output. The UDN2981 and UDN-2983 are intended for TTL, DTL, and
5V CMOS applications, and the UDN-2982 and
UDN-2984 are for 12V CMOS or PMOS logic types.
~-L--~O"~'
Pin-olJt for the series is inputs opposite outputs,
thus facilitating printed wiring board layouts and separating high voltage connections from lower levels
wherever practical. As is the typical case with Sprague
Electric interface the series incorporates transient protection diodes for inductive loads. Shown (Figure 21)
is the pin-out of these 18-lead DIPs which utilize a
copper alloy lead frame for improved thermal characteristics.
t----+-----t----t-/
~.r_----~----_t-
The schematic of Figure 22 shows the basic source
circuit with an inductive load. To minimize power
and allow use with a wide range of power supplies
the high voltage input inverter uses a current sink.
Of particular importance with such a device is power,
since unwanted circuit power restricts output current
and duty cycle combinations.
°O~---~w~--~~~O~--~&=O----~•.~O
v••,
Figure 20
7-38
APPLICATIONS INFORMATION (Cont'd)
v,
ONE OF EIGHT DRIVERS
3 K
OUTPUT
1.5K
R = 3.0 k..n. for UON-2981/83k
R "" 8.5 Iu.. for UDN-2982/84A
OI"G.NO. A-10.2"2
Figure 21
Figure 22
An advantage using the source driver for high cur·
rent interface is a potential minimization of coupling
of unwanted switching transients which affect circuit
logic components. Poorly designed printed wiring
boards or lengthy cagling may create difficulties with
the high ground currents (and IR drops) when open
collector circuits are .used. Lamps are particularly
strong offenders due to their severe inrush currents.
Higher current applications may utilize the UDN2980 series as a segment driver and the ULN-2064
type as a digit driver. With no duty cycle considerations the output current for all 8 channels is approximately -IOOmA at +70°C (assuming the +V supply
is less than +ISV). A IOOmA segment current trans·
lates into 800m A digit current for the ULN-2064
driver. High currents are possible with duty cycles
less than the doc (100%) level which assumes all
"eightS" and no "blanking" intervals.
Separation' of logic ground and load ground is
possible with the UDN·2980 series, and IR drops or
high transient currents are much less problemsome.
IR drops in the wiring from the output will affect
lamp intensity, and the ground side of the lamp may
be well separated (physically) from the logic grounds.
With open collector ICs high currents and microsec·
ond switching. >speeds may combine .to create "false"
signals, but separating these at the power supply mini·
mizes any pb!ential difficulties (a UQN.298() advan.
tage).
.0.
o
In Figures23 and 24 the UDN-29~O series is shown
with MUXed LEDs; the configuration in Figure 23 is
for common anode LEDs, and the UPN-2980 type is
used as a digit driver. The arrays for the segment side
of the display offer curren( sinking levels to a 3S0mA
max (ULN-2003) with proper duty cycle and package
power considerations. Since the SOOmA maximum
level of the' UDN-2980 types is the digit current the
upper limit of soprcecurrent ill approximately 70mA
without any ~ut}' cycle or Vs,level concerllS.
too
lool--f--+--+--+-"'-+-""';""'oe;::-=j::>-..::d
UON 2981-2984
Ys
ao
10
40
:s:
10
70V
10
10
PERCENT DUTY CYCLE
Figure 2S
7-39
10
APPLICATIONS INFORMATION (Conf'd)
1- - - - -
-
- r----.------1--------::..;=-==+=~~=_.:;
1
1/4 UDN-2981A
I
I
D1GIT
SELECT
1
*
Figure 23
-1---------
,----1
I
I
SEGMENT-..I\III'-I
SELECT
1
-.! ,_ _ _ _ _ _ _
1_ _ _ _ _1
1/7 UlN-20B1A
1/7 ULN-2031A
1;7 UIN-2003A
_or_
O~\l,
1- - -
- -
-
.1
110. 8- 13£1
----.----_---------_-=+==------;
- ....
1
1/4 UDN-2981/82A
I
I
1
*
,,
Figure 24
---------
,
--------1
I
I
1
,_______ .1
1/4 ULN-2064;74'
1,_______
1/4 UlN-2064;748
DWU.IIO.8-1363
7--40
.1
APPLICATIONS INFORMATION (Conf'd)
Power curves indicating allowable conditions for a
+70°C ambient and Vs ::; +70 volts are shown in
Figure 25. Operation at much lower supplies improves
the capability somewhat, since the max current from
Vs affects the IC power. Lower voltages improve the
allowable duty cycle or current limits somewhat, and
if necessary should be included as a factor in
calculating safe thermal operation.
not exceed 6 volts. Another consideration is current,
and this limit (max base current) may have to be confirmed by the vendor.
Summary
With ~ach new Sprague Electric interface IC has
come an extension of the boundaries of simplifying
many designs while also reducing component count
and system cost. A great many complex MOS ICs
must interface to the outside world and such designs
are "self defeating" if they must incorporate large
numbers of discrete components for peripheral loads
and displays. Further evolution of Sprague Electric
power and display interface will be keyed to the customer needs evolving from the growing !-,P revolution.
Hot wire (incandescent) readouts are driven in much
the same manner as LEDs, except that MUXed(Figure 26) hot wire displays must incorporate diodes to
prevent "sneak" series-parallel paths to unaddressed
elements. It may be possible to use some transistor
arrays (short collector to base) for the circuit diodes,
but the maximum reverse voltage to the diode must
1-- -
-- -
-
-
-
-
-
-
-~
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
o
1I7lHN_J081A
Figure 26
7-41
_00"_
1/7 UlN-2003A
APPLICATIONS INFORMATION (Cont'd)
Series ULN-2000A Darlington Transistor Arrays
-
Description and Application
Introduction
High-Voltage and High-Current Capability
The increased use of electronic circuits in systems
formerly built with mechanical, electro-mechanical, or
hydraulic components has resulted in systems becoming more precise, more reliable, generally less expensive, smaller, more efficient, and faster. Although the
drive capabilities of monolithic integrated logic circuits
are adequate for most information processing applications, there now exists a large and rapidly growing
number of system applications where the currentcarrying and/or voltage-sustaining capability of the integrated circuit logic is inadequate. Typically, these
deficiencies arise when the logic must control such
peripheral components as relays, solenoids, punches,
stepping motors, and a variety of indicators (incandescent, LED, or gas discharge lamps and displays).
A large number of interface problems have been
simplified by the Series ULN-2000A high-voltage,
high-current Darlington transistor arrays. These devices are suitable for voltage, current, and gain levels
beyond the limits of other monolithic buffers and
arrays.
A very common solution to this output interface inadequacy has been the addition of discrete power
transistors (or SCRs) and associated passive components to the logic output in order to obtain the necessary cutrent and/or voltage capability. Although this
provides a very satisfactory electrical solution, the
large number of discrete components often required,
high assembly labor costs, and space (packaging) limitations often mean additional problems and cost. A
simple, and less expensive solution is the use of monolithic integrated circuits.
The Series ULN-2000A is comprised of five different high-voltage/high-current interface circuits. They
are capable of controlling resistive, inductive, or tungsten filament loads of up to 125 watts and are compatible with all standard digital logic families (DTL, TTL,
PMOS, and CMOS) without the need for additional
discrete components.
The five devices in the ULN-2000A series are all
comprised of seven silicon NPN Darlington pairs on
a common monolithic substrate. All units feature
open collector outputs and integral suppression diodes
for use with inductive loads.
All devices have an output sink current capability of
500 mA although peak inrush currents to 600 rnA are
permissible, making them ideal for use with tungsten
filament lamps. All of the outputs will sustain "OFF"
voltages of at least 50 volts. Each individual Darlington circuit may therefore switch up to 25 watts (50 V
at 500 mA).
A definite asset of monolithic device technology is
the very fine match between adjacent outputs when
used in parallel. Applications requiring a sink current
beyond the capability of a single output can be accommodated by parallel outputs. Continuous operation
of all outputs at the maximum rated current is not
allowed because of power dissipation limitations imposed by the package. However, as illustrated in Figure I, under certain conditions, the Series ULN-2000A
Darlington arrays are capable of switching loads totaling more than 125 watts at an ambient temperature
of +70°C.
7-42
APPLICATIONS INFOR.MATION (Conf'd)
copper lead frame used on these devices. As shown,
at an ambient temperature of + 70°C, the Kovar lead
frame allows only 0.64 watts while the copper lead
frame allows 1.33 watts. At +25°C the copper lead
frame permits a package power dissipation of 2.0
watts!
High-Power Capability
A primary limitation of many interface circuits is
the power dissipation of the device package. Until recently, very little concern was expressed for monolithic
integrated circuit power dissipation. Improvements in
silicon device technology have brought about a growing number of monolithic circuits capable of power
considerably in excess of present package technology.
Actual power dissipation in any application for the
Series ULN-2000A devices is the sum of the individual
driver 'power dissipations. In turn, the individual
driver dissipation is the product of the collectoremitter saturation voltage, the collector current, and
the duty cycle. The collector-emitter saturation voltage is dependent on the collector current and, to a
lesser extent, operating temperature.
The Series ULN-2000A is supplied in a 16-pin dual
in-line plastic package with a copper lead frame.
Shown in Figure 2 is a comparison of the allowable
package power dissipation for the industry standard
iron-nickel alloy (Kovar) lead frame and the Sprague
0
_\:EVI<;ElIMIT
~C1
5
~'"
1>
o~
~
&,,
'--"1f(
200'/--_-+_ _-+
7~
"'"1()
\'b
"'f
,"
~"
~
5
o
o
lOO~~30--~--~L--_WL
o
~-
.., :;:"0
"~
~-,
50
100
AMBIENT TEMPERATURE IN
PER CENr DuTY CYCL(
1"!\
0'II'G.1i0.
Figure 1
150
°c
A-9753A
Figure 2
COLLECTOR CURRENT AS A FUNCTION OF
DUTY CYCLE AND NUMBER OF OUTPUTS
ALLOWABLE AVERAGE
PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
7-43
D
APPLICATIONS INFORMATION (Cont'd)
The Basic Darlington Array
14 to 25 Volts PMOS Applications
The first, and basic array, in this series, is the Type
ULN-200lA. This is a general-purpose version with
input current limiting normally accomplished via the
use of an appropriate discrete resistor connected in
series with each input. It is also possible to utilize
the intrinsic current limiting of many MOS outputs
as shown in Figure 4; a typical P-channel characteristic.
The Type ULN-2002A Darlington array was specifically designed for use with 14 to 25 volt PMOS devices. Each input has a 7 V Zener diode and a 10,500
ohm resistor (nominal values) to limit the input current to within the capability of most PMOS of the
type specified. The basic circuit diagram is shown in
Figure 5 with a typical application. Note that there
are no pull-down resistors or other external discrete
components necessary. The incorporation of the Zener diode also results in excellent noise immunity for
this array.
The use of TTL in such a manner is not recommended due to the higher currents and resultant high level
of package power dissipation. Outputs of most PMOS
and CMOS circuits will not normally source currents
of any significance due to their high source impedance.
TTL and CMOS INTERFACE
The ULN-200IA and ULN-2002A allow only a
limited number of input options. Shown in Figure 6
is the basic circuit diagram of the Type ULN-2003A.
This device has a series base input resistor to each
Darlington pair, and thus allows operation directly
with TTL or CMOS logic operating at a supply voltage of 5 V (or 12 V CMOS using FET characteristics).
A guarantee of 200 rnA output sink current capability (saturated) is provided with the worse case TTL
logic 1 level of 2.4 volts. Low-power Schottky-clamped TTL logic is generally specified to have a minimum
VouTof 2.7 volts. The ULN-2003A is guaranteed to
sink 250 rnA under this input condition. With the
more typical input of 3 volts, the ULN-2003A Darlington pair will sink at least 300 rnA in the "ON"
state.
(each driver)
Figure 3
TYPE ULN-2001A SCHEMATIC
DRAIN-lO-SOURCE VOLTAGE, Vos
-16
·14
-12
-10
-8
-6
-4
-2
/I
J
~
V
/
/
V
o
/
o
-1
·2
Figure 4
-3 ""E
~
-4
'i
~
a
z
u
o
~
g
100
V
L
I
U
l
I
0
/L
200
400
INPUT CURRENT IN jJA - liN
Figure 8
Figure 7
COLLECTOR CURRENT
AS A FUNCTION OF INPUT CURRENT
Type ULN-2004A SCHEMATIC AND APPLICATION
7-46
bOO
APPLICATIONS INFORMATION (Cont'd)
The input current as a function of input voltage is
shown in Figure 9 for the ULN-2002A, ULN-2003A,
and the ULN-2004A. The Type ULN-200IA Darlington array is not shown since input current is more
a function of the external circuitry. Systems utilizing
either CMOS or PMOS logic should be evaluated for
intrinsic current limiting as was shown in Figure 4.
Low Available Drive Current Operation
Occasionally, applications featuring minimum available input drive current and a high output load current
have shown the Type ULN-2003A and ULN-2004A
Darlington arrays to be inadequate for the particular
requirement under worst case conditions. This usually results from the restricted drive current available
from a TTL or CMOS gate operating from a nominal
supply of 5 volts.
2. 0
ULN-2002
].1 .5
~~
/'
/
...... ......
".'
L
.0
.5
0
V ....... ... ......
......
/
J:.:;.c;~
......
...... ......
......
......
Under worst case conditions with a low logic 1 voltage (2.4Y), and a high input resistor value (3.51 kn),
the available load current is reduced to only 145 rnA .
Compounding this problem would be the effect that a
high drive current requirement would have on the
logic output voltage since that is normally specified at
only 400 p.A. If the gate output is connected to additional logic elements, a minimum logic 1 voltage of
2.0 V must be maintained and at that level the worst
case Darlington load current would be reduced to only
31 mAl
"'......
12
16
18
20
22
4
26
INPUT VOLTAG~ - VIN
2. 5
L
ULN-2003
2. 0
5
0
/
.5
L,
V,"
'" "
~"
V ""c~
,
"
",
100'"
A simple solution to this problem is through the
use of inexpensive pull-up resistors as shown in Figure
10. The minimum resistor value is determined by the
maximum allowable sink current (16 mA for TTL,
360p. A for CMOS), the minimum logic 0 output voltage, and the maximum supply voltage as per the following equation:
"
"
Vs -
~'
VOUTIO)
Rp > ---,----
lOUT
"
0
2
4
3
5
For standard TTL, the minimum value for Rp is
about 316 n with values between 3000 nand 5000 n
being used customarily. Multiple pull-up resistors in
a single in-line package are shown in Sprague Engineering Bulletin No. 7041; resistors in a dual in-line
package are shown in Bulletin No. 7042.
9
8
INPUT VOLTAGE - VIN
2.0
ULN-2004
1.5
1.0
0.5
---
~
~ ~,,~!!-..
..--- -
~
- .--~
.. ---
!,.......- ~
~--
10
INPUT VOLTAGE - V IN
Conclusion
... --11
MO.
Since the Series ULN-2000A high-voltage, highcurrent Darlington transistor arrays are quite conservatively designed, the basic product is fully capable of
being ordered to higher voltages and/or higher currents
than the standard specifications. Presently, parts are
available to withstand up to 95 volts on the output.
Parts with this higher voltage rating would create a
potential for switching loads far in excess of 125 watts!
Aside from the higher power handling capability, the
higher voltage rating is required for driving plasma or
gas-discharge displays.
12
A-9899
Figure 9
INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE
7-47
o
APPLICATIONS INFORMATION (Conf'd)
ULN-2003A
Although not intended for high power applications,
there is also available a Series ULS-2000H with hermetic sealing and an operating temperature range to
+125°C. These parts are recommended for military
and aerospace applications as well as commercial and
industrial control applications where severe environments may be encountered.
+Vcc
Rp
All of these Darlington transistor arrays offer a
common solution to a great many interface needs.
The minimal component count and straightforward
printed wiring board layout offer benefits in cost reduction, simplicity of board layout, and savings in
space. Other benefits are a reduction in insertion
costs, and lower handling and inventory costs than
other alternatives. Cost benefits from some of these
factors are not very tangible. However, fewer components, less complex boards, etc. usually result in
lower system manufacturing costs.
DIiIG. MO. A-IO.17S
TTL
OUTPUT
Figure 10
USE OF PULL-UP RESISTORS
TO INCREASE DRIVE CURRENT
7-48
APPLICATIONS INFORMATION (Cont'd)
Computing IC Temperature Rise
Heat is the enemy of integrated circuits-particularly power devices. Here's how to use thermal ratings
to determine safe Ie operation.
Why Ie Temperatures Rise
r,
Reprinted by permission from the June 9, 1977
issue of MACHINE DESIGN, Copyright © 1977 by
Penton/Ipe Inc., Cleveland, Ohio.
EXCESSIVE heat shortens the
life of an IC and reduces its
operating capability. Until recently, lCs were capable of
operating only in low-power applications requiring perhaps a
few milliwatts of power. But
now, new lCs handle several
hundred milliamperes and
drive devices such as relays,
solenoids, stepping motors, and
incandescent lamps. These high
power levels may increase lC
temperatures substantially and
are capable of destroying devices unless appropriate precautions are taken.
Thermal Characteristics
The thermal characteristics
of any IC are determined by four
parameters. Maximum allowable IC chip junction temperature
T J and thermal resistance R.
are specified by the IC manufacturer. Ambient temperature T,4
and the power dissipation Pn
are determined by the user.
Equation 1 expresses the rela-
Ie temperature is determined
by ambient temperature r l ,
heat dissipated P", and total
thermal resistance Re. This
total thermal resistance is
comprised of three individual
component resistances:
chip Re , lead frame RJ.'
and heat sink R,.
tion of these parameters.
(1)
Junction temperature T J
usually is limited to 150°C for
silicon ICs. Devices may operate
momentarily at slightly higher
temperatures, but device life
expectancy decreases exponentially for extended hightemperature operation. Usually, the lower the junction
operating temperature, the
greater the anticipated life of
the IC.
Ambient temperature TA is
7-49
traditionally limited either to
70°C or 85°C for plastic dual inline packages (DIPS) or 125°C for
hermetic devices. Again, the objective is to operate at as Iowa
junction temperature as practical.
Thermal resistance R. is the
basic thermal characteristic for
ICs. It is usually expressed in
terms of DC/Wand represents
the rise injunction temperature
with a unit of power applied in
still air. (The reciprocal of
thermal resistance is thermal
conductance, or derating factor,
D
APPLICATIONS INFORMATION (Cont'd)
What the Curves Show
The junction temperature of an IC depends on several factors, including the thermal resistance of the IC and the
operating duty cycle. Graphs showing the relationship of these factors are often useful in specifying an IC.
Thermal Ratings
3.0
-75
-50
-25
0
+25 +50
+75 +100 +125 +150
Ambient Temperature,
T~
(0G)
Typical thermal-resistance ratings for ICs in still air range
from 60°C/W to 1400C/W. The slope of each curve on this
graph is equal to the derating factor Ge, which is the
reciprocal of thermal resistance RB. For an ambient
temperature of 50°C, a typical 14-lead flatpack with an Re of
140°C/W can dissipate about 0.7 W. A typical DIP, however,
with 14 copper-alloy leads can dissipate almost 1.7 W at
50°C.
The highest allowable package power dissipation shown
here is 2.5 W. Other special-purpose DIP packages are
available with power dissipation ratings as high as 3.3 W at
O°C (Re = 45°C/W). If not for package limitations, IC chip
dissipation might be greater than 9 W at an ambient
temperature of up to 70°C.
Although the curve for plastic DIPs goes all the way to
150oG, they ordinarily are not used in ambients above 85°C
because of traditional package limitations. Hermetic DIPs
are specified to temperatures of 125°C, and at 150°C the
device should be derated to 0 W. The higher
specification limits for hermetic devices 1s the result of
their design for use in rigorous, high-reliability military
applications.
Duty Cycle
«"400
.s
Duty cycle is important in calculating IC junction
temperature because average power-not instantaneous
power-is responsible for heating the IC. To convert from
peak power to average power, multiply the peak power
dissipation by the duty cycle. The average-power rating is
then used with the thermal-resistance rating to calculate
the IC junction temperature. Thus, short duty cycles allow
peak power to be high without exceeding tile 1SOoC
junction-temperature limit. However, this consideration
applies only to ON times of less than 0.5 sec .
o
~
<5
()
~ 200
"
.,";<
a.
:0
.2
;;: 100
20
40
60
80
100
Duty Cycle, D (percent)
G. expressed as W/oC.) Thermal
resistance of an IC consists of
several distinct components,
the sum of which is the specified
thermal resistance. For a typical IC, these components of
thermal resistance are 0.5°C/W
per unit thickness ofthe silicon
chip, 0.1 to 3°C/W per unit
length of the lead frame, and up
to 2,000°C/W per unit thickness
of still air surrounding the IC.
DIPs are used more than any
other type of packaging for
lCs and newer copper-alloy
lead frames provide a superior
thermal rating over the standard iron-nickel-cobalt alloy
(Kovar) lead frames. However,
power lCs are also available
in other packages such as flatpacks and To-type cans.
The power P D that an Ie can
safely dissipate usually depends on the size of the lC chip
and the type of packaging, Most
7-50
common copper-frame DIPs can
dissipate about 1.5 W, although
some special-purpose types
have ratings as high as 5 W.
Power Dissipation
Total rc power to be dissipated depends on input current,
output current, voltage drop,
and duty cycle. Thus, for many
industrial digital-control rcs,
logic-gate power PI (typically
less than 0.1 W) and output
APPLICATIONS INFORMATION (Cont'd)
power Po must be determined to
find the total power to be dissipated. Total power dissipation
for these logic devices is the sum
ofPl andPo •
PI
==
n(Veelee)
(2)
Po
=
n(VCE(8,1T)lc)
(3)
where Vcc = logic-gate supply
voltage, Icc = logic-gate ON
current, VCE(SAT) = output saturation voltage, Ie = output
load current, and n = number of
logic gates. Manufacturers
usually list typical and maximum values for these voltages
and currents. For thermal considerations it is best to use the
maximum values so that
worst-case power dissipation is
determined.
If the duty cycle of the device
is longer than 0.5 sec, the peak
power dissipation is the sum of
the logic-gate power PI and output power Po for the logic ON
state alone. If the ON time is
less than 0.5 sec, however, average power dissipation must be
calculated from instantaneous
ON and OFF power P ON and
Measuring
Pan' from
Pn
::: DPON
+
(1 -
D)POFF
(4)
Corrective Actions
If the junction temperature or
the required power dissipation
of the IC is calculated to be
greater than the maximum
values specified by the manufacturer, device reliability and
operating characteristics possi-
Ie Temperature
Sometimes IC junction temperature cannot be calculated
readily and instead must be measured. Measurement should
be made when there is insufficient data with which to
calculate, when the effects of external variables such as
forced-air cooling orenclosure size must be determined, oras
a check on the manufacturer's specifications regarding
package thermal resistance.
The most popular technique for measuring IC temperature
uses the characteristic of a diode to reduce its forward voltage
with temperature. Many IC chips have some sort of accessible
diode-parasitic, input protection, base-emitter junction, or
output clamp. With this technique, a "sense" diode is
calibrated so that forward voltage is a direct indicator of diode
junction temperature. Then, current is applied to some other
component on the chip to simulate operating conditions and
to produce a temperature rise. Since the thermal resistance of
the silicon chip is low, the temperature of the sense diode is
assumed to be the same as the rest of the monolithic chip.
The sense diode should be calibrated over at least the
expected junction operating temperature chamber. Apply an
accurately measured, low current of about 1 mA through the
sense diode and measure the forward voltage in 25°C
increments after stabilization at each temperature. This
calibration provides enough data for at least six points to
construct a diode-forward-voltage versus
junction-temperature graph at the specified forward current.
A typical 25°C forward voltage is between 600 and 750 mV and
decreases 1.6 to 2.0 mV/oC.
For power levels above 2 W, it may be necessary to use more
than a single transistor if only the device saturation voltage
and sink current are used. When higher power isdesired, keep
the output out of saturation.
Measuring the sense-diode forward voltage mllY require a
considerable waiting period (10 to 15 minutes) for thermal
equilibrium. In any event, at the instant of measurement, the
heating power may have to be disconnected since erroneous
readings may result from IR drop in circuit common leads.
Various circuitconnections (such as four-point Kelvin) may be
arranged to reduce or eliminate this source of error.
The IC junction temperature can be determined by
comparing the voltage measurement with the internal power
source against the voltage measurement with the temperature
chamber.
7-51
o
APPLICATIONS INFORMATION (Cont'd)
Il'ldustriaJ po.werdrive~~re .vb¢~:5;~V.
~c =2&M "'dV."Ers~X).;".O.7V>,i!tI~'~;;; .,
250 mA.l'rom Eqv!ltions2 and 3; worst "
ClISe logic arid .output po~er
disllipatlon are
.
thisllleansthatlherelsO,flS W limiton .
average power, 1M. not Instantaneous
.. power. If the duty cycle is loW \}nough.
·and~h\}Of\I1lmeis·n~ more than atIowt'"
'Pt "" 4(5.25 V x 25 nlA)
c= 525.mW
P,,"" 4~IU.y X2!if1l mAl
;'F700mW.
"0:5 aIi.c. 1M averap powerdi~tpatibn
'"
pan beconsiderabfy lower than the
thuS, ina total worst case power
peak power. The ON. or peak power, is
dissipation P"ls S25 mWplus TOO roW;
determined from the date sheet
or1.2t5.W.Ji;romEgV.atibn 1, maximum
I
tv. I ~"v.
"junctlon temp~rature.TjiS,:
"" ': .. ' maximum va ues'O ce. ce. a, .... CE(1lJjT!
at the specifledload current of 250 mAo
From equations 2 and 3, logic-gate
T,J C'70~C + (1.225 W)
power PI and output power P. for the
... (16.!J7mW;oC)
ON ~tate a r e '
=·i43.5,~C
Ptoblem: Delermine the acceptable
dUty cYcl\lfor a herrnetic power driller
.,..Ith a ttlerrna'r~i$lal1ce<:lf 1QW&r <\lsslplltion ....
bly will be reduced. Possible
solutions are: 1. Modify or partition the circuit design so the IC
is not required to dissipate as
much power. 2. Reduce the
Instantaneous ON pow!lr PQN is ,the
sum of PI a,nd P, for the ON $ta,~. or
1.. 283W. TheOFFPoweds·prima~i,yth~
thermal resistance of the IC by
using a heat sink or forced-air
cooling. 3. Reduce the ambient
temperature by moving heatproducing components such as
Setting Up the Circuit
Calibrating the Sense Diode
Constant cu rrent
Resistors control
output transistor
power dissipation
source of about 1 mA
/
:>
.s
:;;;
oi 600
~
'1'
___----.-_.t---j-'
'0
Voltmeter measures
>
forward voltage
'E
across sense diode
~ 500
&
Transient
Ie device
..._-.....
transformers and resistors
away from the IC. 4. Specify a
different IC with improved
thermal or electrical characteristics (if available).
[iIjJ[ij)
suppression
I
diode used
as sense diode
---'
Input power is negligible compared to output
power and is therefore not measured.
25
7-52
PACKAGE DRAWINGS
DIMENSIONS IN MILLIMETRES
DIMENSIONS IN INCHES
METRIC DIMENSIONS ARE BASED ON I' = 25.4 mm
r&
r&
0.014
0.008
14 13 12
11
10
2 3. 4
~ 0785
5
9
8
6
7
0.35
0.21
14 13 12
I
II
-I
0.075. REF.
0 lOa:!: 0.010
NOTE 1
;
O'
II
1.65
2
3
~
I
089
5
9
8
6
7
~
190 REF.
254
18:67
:#tI~"~
¥~.+
-.JLQ.023
0 .015
4
19 '3,
5.08 MAX
0.200 MAX
+-rISEATING PLANE
0.020
MIN.
10
_,~;].:=::::::~II .=.g;lL-_~'5.
~~:::)I ~~'5'
INDEX AREA
_0.065
0.035
11
/
D.
0.25
±
NOTE 1
"' '"
MIN¥rrAmP+
0.51
0.100 MIN
-.JLO.58
0 .39
11
2.54 MIN
11
'A' PACKAGE: 14-Pln Plastic Dual In-Line
g:~;:---1 ~
INDEX
t ';:
10 9
]I
g~f:::::J ~
~
A~~
.
~2i_3
0.065
0.035
45
r--- 0.785
_
.JL
~.~6~
16 15 14 13 12
I
~0100:!:OOlO
~
1.11 ___
o.72~1
1.65
/
I
0.89
0.735
0.200 MAX
1 21-!
4
5 6
::!~
7 8
2.54 ±O.25
NOTE 1
I
~_
/
5.08 MAX
_~__f=rSEATING
-¥=-¥yvrAKrl~
PLANE
0.100
0.020
MIN.
t_l
~j~::::~:; -.;=~;
--------.l
--.
NOTE 1
0.35
0.21
Jl
JL
II 0.023
0.015
H/£ATING PLANE
~rPmAm~54MIN
MIN
0025 REF
.
0.51
MIN
1r~;~ 1~'64
REF
'A' PACKAGE: 16-Pln Plastic Dual In-Line
1~lL-t. tt:::::J
r&
0.35
0.014
0,008
I. 17 ,. . . 14
INDE~:W":
:
:
:
I~
12 II 10
:
:
:
1123456789
I-O~915
~
0,885
a.oS!!
0,035
0.100 t: 0.010
NOTE 1
;0" INDEX'R~AII
1.65
5
•
7
L~ .
9W-. . ~;I~
e
-I _
22.48
254
Lr~~'
?:'~
¥FP"tRFU-q""\RR tt
¥~rJln1V~~~O
U~~.050
-,
0'51 MIN.
U
-JI
REF
~ ~
05.
,1039
'A' PACKAGE: 18-Pin Plastic Dual In-Line
NOTES:
1. lead spacing tolerance is non-cumulative.
2. Exact body and lead configuration at vendor'S option within limits shown.
3. leads missing from their designated positions shall also be counted when numbering leads.
4. Terminal lead standoffs may be omitted and replaced by body standoffs.
5. lead gauge plane is 0.030' (0.76 mm) max. below seating plane.
7-53
U U I) U U I
i--l-
II
I:
025
NOTE 1.
5.08 MAX
MSEATING PLANE
-lL=
-U----Q.Ci'"i5
4
23.24
0.89
0.200 MAX.
O~,~O
2 3
~
_
""62f
-"I !- ~:l
0
PACKAGE DUWINGS (Conf'd)
DIMENSIONS IN MILLIMETRES
DIMENSIONS IN INCHES
METRIC DIMENSIONS ARE BASED ON \' ~ 25.4 mm
~,::::::::::~
~1~
g~g~-i:!
INOEX AREk'
fL .
• • • • 7 8 • 10 llio.045 REF.
~·.~~O
-r-~,!,gd~~g,g,~
9.91
7.62
INOEXAREA~'l!
1.65
_
0·89
5.08 MAX.
/
0.200 MAX.
~SEATING
ffim{Afffl+
II--
0.020
MIN.
--MIN'
•
0.060
0.015
..jl.o.on
~o
0.014
0.125
0 II
0:20
NOTE I
~0"3"'N
Oil1 ~~~~8,,:t
9
L
VENOOR'S OPTION
~ VENDOR'S
~~~~8" ~1'OPTION
-
a==k~-;r~
0.38....j~
DWtl. ltD. A-IO.2108 IN
T::~:
DWG. NO. A-IO.21IAIfoI
'H' PACKAGE: 16·Pln Hermetic Dualln·Llne
~':r:::J~:1I
n=~20
LLC~~
/
INDEX
AREA
0.008
r
".2 ••3
~
0.76
4 5
23.55
MAX
5.08 MAX
6 7 8 9
H+ 2.54<0.25
NOTE I
'1 r-
t_ ~~-L
.l..m
0.38
..j~
~
0.36
3.18
DWIi.It(I.... ,O.312AIII
'H' PACKAGE: 18·Pln Hermetic Dualln·Llne
NOTES:
1. Lead spacing tolerapce is non-cumulative.
2. Exact body and lead configuration at vendor's option within limits shown.
3. Leads missing from their designated positions shall also be counted when numbering leads.
4. Terminal lead standoffs may be omitted and replaced by body standoffs.
5. Lead gauge plane is 0.030' (0.76 mm) max. below seating plane.
7-56
0.20
PACKAGE DRAWINGS (Cont'd)
DIMENSIONS IN MILLIMETRES
DIMENSIONS IN INCHES
METRIC DIMENSIONS ARE BASED ON I" = 25.4 mm
INDEX AREA
~:~:6TYP
'!==@
~@
~@
'I=@
;t=:I@
1\=-=lI==@
~®
IAoil=:::::J®
=0
~(V~~L-__~FT~~0
0.13 MIN
O.050TP
1.27 TP
:1:0.13
.o.OOS
0.085
0.045
o.OO"lYP
0.tl40
~LO.o,o
=;,,t:==j
:-~==-====::j~
0.280 MAX
,
NOTE ,
NOTES,
1 INCLUDES OFF-CENTER LID, MENISCUS, + GLASS OVERRUN
2 ALL LEADS WELDABLE AND SOLDERABLE
O'll(i. 110.
~IO,252A
1M
tJ!I\l. NO. A.IO.
2~2A
I'"
'J' PACKAGE: 14·Pln Hermetic Flat-Pack
t
0.014
......
'~:[1::~
--rr
8765
0.260
0.065
1
2
00301...
~
3
4
%~
0310
," " k.fL:. ~ ~ ..~. - - - -.
,--
-'LJ --L
0.040 REF.
0100-0010
0
0
0020
MIN.
---r-i
8765
6.60
7.87
610
7.37
1.65
089
/
NOTE'
0.200 MAX
~EATING
t
035
02'
0.008
~
_
2.!54 :1:0 25
NOTE 1
9 1
*
I
'8:
5.08 MAX
~SEATING PLANE
PLANE
WI
--lLO.023
-II~ 0.015
0.5'
0.100
MIN
MlN
mY=r
--1H·.~;
NOTES:
1. lead spacing tolerance is non-cumulative.
2. Exact body and lead configuration at vendor's option within limits shown.
3. leads missing from their designated positions shall also be counted when numbering leads.
4. Terminal lead standoffs may be omitted and replaced by body standoffs.
5. lead gauge plane is 0.030" (0.76 mm) max. below seating plane.
'M' PACKAGE: a·Pln Plastic DuallnoUne
7-57
2.54 MIN
o
PACKAGE DRAWINGS (Cont'd)
DIMENSIONS IN MILLIMETRES
METRIC DIMENSIONS ARE BASED ON \' = 25.4 mm
DIMENSIONS IN INCHES
0.014
0.008
INDE~~~::::: :~I.= ~L,~
-
~.~65
~~
. 35
~
D.IS!)
0.735
__
0.100
* 0,010
-----,
J
NOTE 1
5.08 MAX
0.200 MAX
~-fSEATING
~SEATING PLANE
PLANE
1:=-~+
MIN.
_.JLO.023
0'51MIN~+
0.100 MIN
-If'·'---O.o15
--.
----.lLO.58
2.54 MIN
lio.39
'R' PACKAGE: 14-Pln Ceramic Dual In-Line
O.044~ ~
%g6~
~C:::~~::II
INDEXA~~
0.065
~2J-!
0.035
_
.~~
-L-UL-t'~
4 5 6 78
0100"'0010
0.785
~NOTE 1
0.735
i¢'W.'
,/
5.08 MAX
0.200 MAX
0.020
,,~,
0,51
_JLO.023
MIN
II
MIN,
0,025 REf
0.015
1f-'
0.58
0.39
0.64 REF.
'R' PACKAGE: 16-PlnCeramlc Dual In-Line
2.&.!.i
~.~~
0.008
18 11 1. 15 14 13 12 "
~
10
",,~::::::::~I ~~'5'
~ 1I1~
0.035
t=
3
~.9~5
6 1-:
~
0.885
0.100*0.010
NOTE 1
~
~L-115'
-----,00
254 :t 0, .25
NOTE 1
/
0200 MAX.
SEATING
Trrn1=
!S.08 MAX.
~
SEATING
PLANE
~O.'OO
°a~o --1r-W!
--I ~R~5FO
-VVVVVVVVVJ
M1N
0.51 MIN
PLANE
~
,--1 w
•
--1r-~;~
'R' PACKAGE: 18-Pln ICeramlc Dual In· Line
NOTES:
1. Lead spacing tolerance is non-cumulative.
2. Exact body and lead configuration at vendor's option within limits shown.
3. Leads missing from their deSignated positions shall also be counted when numbering leads.
4.' Terminal lead standoffs maybe omitted and replaced by body standoffs.
5. Lead gauge plane is 0.030' (0.76 mm) max. below seating plane.
7-58
MIN
-----,
/
()I
PACKAGE DRAWINGS (Cont'd)
Package Thermal Characteristics
Package
Type
Designator
Frame
Mater
Applicable
Curve
Raja
Gaja
Plastic
8 lead Mini
M
Copper
Fig lC
80°C/W
12.5mW/oC
14 lead
A
Kovar
Fig IE
8mW/oC
14 lead
A
Copper
Fig lB
125°C/W
60 oC/W
16 lead
A
Fig IE
125°C/W
8mW/OC
16 lead
A
Kovar
Copper
Fig lB
60°C/W
16.67mW/oC
16 lead
16 lead (V8 Heat Si nk)
B
Copper
Fig 2C
22.22mW/oC
B
Copper
Fig 2B
45°C/W
37.SoClW
16 lead (V7 Heat Sink)
B
Copper
Fig 2A
27.SoC/W
36.36mW/oC
16.67mW/oC
26.67mW/oC
18 lead
A
Kovar
Fig 1D
llO°C/W
9.lmW/oC
18 lead
22 lead
A
A
Copper
Copper
Fig lA
55°C/W
SO°C/W
18.l8mW/oC
20mW/oC
14 lead
R
Kovar
Fig 3B
75°C/W
13.33mW/oC
16 lead
R
Kovar
Fig 3B
75°C/W
13.33mW/oC
18 lead
R
Kovar
Fig 3A
65°C/W
15.4mW/oC
8.33mW/oC
CerDIP
Hermetic
8 lead
H
Fig4C
120°C/W
14 lead
H
Fig4B
90°C/W
l1.1mW/oC
16 lead
H
Fig4B
11.1mW/oC
18 lead
H
Fig4A
14 lead
J (flat pack)
Fig4D
90°C/W
7SoCIW
140 oC/W
NOTE: Further thermal information is contained in the Applications Section; reference pages 7-16, 7-23, 7-43, and 7-49 thru 52.
7-59
13.33mW/oC
7.14mW/oC
0
PACKAGE THERMAL CHARACTERISTICS (Cont'd)
2.5 rr-......,.--,--.,.---,....--,----.
5.0 r-
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