1980_NEC_Microcomputer_Catalog 1980 NEC Microcomputer Catalog

User Manual: 1980_NEC_Microcomputer_Catalog

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, i'

ttlEC

I
I

CONTENTS
FUNCTIONAL AND NUMERICAL INDEXES
ROM ORDERING PROCEDURE

MEMORY SELECTION GUIDE
AND ALTERNATE SOURCE ,GUIDE

RANDOM ACCESS MEMORI ES

II
II
II
,

READ ONLY MEMORIES

MICROCOMPUTER SELECTION GUIDE
AND ALTERNATE SOURCE GUIDE

•
•II
~

JlCOM-4 SINGLE CHIP
4-BIT MICROCOMPUTERS

i

JlCOM-8 MICROPROCESSORS

JlCOM~8

SINGLE CHIP
8~BIT MICROCOMPUTERS,

JlCOM-8 PERIPHERALS

,,NEe Microcomputers, Inc. "
1980

Product Catalog

REFERENCE SECTION
Quality Assurance Chart
Representatives & Distributors

I
I
II
I
•

NOTES

2

NEe

NEe Microcomputers, Inc.
FUNCTIONAL INDEX
RANDOM ACCESS MEMORIES
Selection Guide. . . . . . . . • . . •.
Alternate Source Guide . . . • • '. .•
Dynamic NMOS RAMs
tLPD411 . . . . • • . • . . • . . . .
tLPD411A . . . • • . . . . • . • • .
tLPD416 . . . . . . . . . . • . • • .
tLPD21i8 . • . • . . . . . • . . . .
tLPD4164 . . • . . . . . . . . . . .
Static NMOS RAMs
tLPD410 . . . . . . . . . . . • . . •
tLPD4104 . . . . . . . . . . • . . .
tLPD2114L . . . . . . . . . . . • .
tLPD2147 . . . . . . . . . . . . . .
tLPD421 . . . • . • . • • . . . . . .
tLPD2167 . • • . . . . . . . . . . .
CMOS RAMs
tLPD5101 L . . • . . . . . . • . . .
tLPD444/6514 . • . • • . . • . . . .
tLPD445 L . . . • . • . . • • • . • .

8
9
11
19
27
36
37
43
47
53
59
63
67
69
75
79

READ ONLY MEMORIES
Selection Guide. . • . • • . • • . . •. 8
Alternate Source Guide . . . . . . .. 9
ROM Ordering Procedure . . . • . •. 6
Mask Programmable ROMs
tLPD2308A . . • . . . • . • . • . • 85
tLPD2316E . . . . . . . . • . . • . 89
tLPD2332A/B . . . • . . . . . • • • 93,
tLPD2364 . . . . . . . . . . . . . . 97
Field Programmable ROMs
(U.V. Erasable)
tLPD2716 . . . . . . . . . . . . . 101
tLPD2732 . . . . • • . . . • . • . 102
tLCOM-4SINGLE CHIP
4·BIT MICROCOMPUTERS
Selection Guide. . . • . . . . • • . •
ROM Ordering Procedure . • . . ••
tLCOM·42 . . . . . . . . . . • • . • .
tLPD548 . . • • . • . . . . • . • •
tLCOM-43/44/45 . . . . . . . . . . .
tLPD546 . . . . • . . . . • • . • .
tLPD553 . . . . • • . . . . • . • .
tLPD557L . . . . . . . . . . . • .
tLPD650 . . . . . . . • . ,. . . . .
tLPD547 . . . . . . . . . • . . • •
tLPD547L . . . . . . . . . . • . .
tLPD552 . . • . • • . . . . • . • •
tLPD651 . . . . . . . . . . . . . .
tLPD550 . . • . . . . . . . . . • .

104
6
109
11,3
115
121
123
125
127
129
131
133
135
139

tLPD550L . • . . . . . . . . . • •
/-lPD554 • • . . . . • • . • • ' ..•
tLPD554L . . . • . . . . . . • • •
tLPD652 • • . . . . . . . • . . . .
Evaluation Chips
tLPD555 . . . . ',' • • . • • . • .
tLPD556 . • • . •• • . .. . . • •
tLCOM·75
tLPD7520 . . . • . • . . . . . • •

II

141
143
145
147
149
153
157

tLCOM-8 MICROPROCESSORS
Selection Guide • . . . . • . . • • . .
Alternate Source Guide . . . . • . •
tLPD8080AF . . . . • . . • • . •
tLPD8085A . • . . • . . . • • • •

104
106
165
179

tLCOM-8 SINGLE CHIP.
8-BIT MICROCOMPUTERS
Selection Guide • . . . . • . . . . . •
Alternate Source Guide •.••.•.
ROM Ordering Procedure . . . • ..
tLPD7801 . • • . . • . . . . . . .
tLPD8021 . . . . . . . . . . . . .
tLPD8022 . . • • . • • . • . • • .
tLPD8041/8741A . . • . . • . . .
tLPD8048/8748/8035L . . . • •
tLPD8049/8039L . . . . . . . .

104
106
6
193
199
205
211
219
23'1

tLCOM-8 PERIPHERALS
Selection Guide . . . . . . . . • . • •
Alternate Source GU,ide . . . • . . •
tLPD765 . . . . • • • • . . . . • •
tLPD781 . . . . . . . . . . . . • •
tLPD782 • . • . • . . • . . • • . •
tLPD3301 . . . . . . . . . . . • .
tLPD7001 . • . • • . . • . . . . . .
tLPD7002 . • . • . . . . • . . • .
tLPD8155/8156 . . . . . . • • . •
tLPB8212 • • . • • • . . . • . • .
tLPB8214 • . . . • • . . • . • • •
tLPB8216/8226 . • • . . . . . • .
tLPB8224 . • • . . • . . • • • • .
tLPB8228 . • . . . . . . . • . . •
tLPD8,243 • • . • • • • . • . • • .
tLPD8251/8251 A . • . . • • . • •
tLPD8253 • • . . . • . . . . . . .
tLPD8255/8255A-5 • • . • • • . .
tLPD8257 . . . • • • • . • . • • .
tLPD8259 • • • . • • . . • . • . •
tLPD8279-5 • .. • • • . •. • • •
tLPD8355/8755A . . • . • • . . .

105
106
241
259
271
283
291
295
299
307
313
319
323
329
335
341
359
367
375
383
399
409

3

NOTES

4

.

.

NEe

NEe Microcomputers, Inc.
NUMERICAL INDEX
PRODUCT

PAGE

PRODUCT

~PD4·10

.. ' . . • . . . . . • . . . .

43

~PD4104

...............

47

~PD411

. . . . . . . . . . . • . . ..

11

~PD4164

. . . . . . . . . . . . . ..

37

. . . . . . . . . . . . ..

69

.....

19

~PD5101

~PD416 .. '. . . . . . . . . • . . ..

27

IlPD7001

~PD421

~PD411A

.....•.. "

L

. . . • . . . . . . . . . . . 291

................

63

j.£PD7002 . . . . . . • . . . . . . . . 295

IlPD444/6514 . . . . . . . ; . . . ..

75

~PD7520

~PD445L

79.

~PD7801

. . • . • . • . . . . . . . . 193

~PD8021

. . . . . . . . . . . . . . . 199

. . . . . . . . . . . . . ..

~PD546

. . . . . . . . . . . . . . . . 121

~PD547

. . . . . . . . . . . • . . . . 1.29

~PD547L

. . . . . . . . . . . . . . • 157

. ~PD8022 . . . . . . .. . . . . . . . 205

. . . . . . . . . . . . . . . 131

~PD8035L

~PD548

. . . . . • . . . . . . . . . . 113

~PD8039L

~PD550

. . . . . . . . . . . . . . . . 139

~PD8041

~PD550L

. . . . . . . . . . . . . . 219
. . . . . . . . . . . . . . 231
. . . . . . . .., . . . . . 21.1

. . . . . . . . . . . . . . . 141

~PD8048

. . . . . . . . . . . . . . . 219

~PD552

..• ' . . . . . • . . . . . . . 133

~PD8049

. . . . . . . . • . . . . . . 23.1

~PD553

. . . . . • . . . . . . . . . . 123

~PD8080AF

~PD554

. . . . . . . . . • . . . . . . 143

~PD554L

~PD8085A

. . . . . . . . . . . . . 165
. . . . . . . . . . . . . . 179

~PD8155

. . . . . . . . . . . . . . . 299

~PD555 . . . • . . . . . . . . . : .. 149

~PD8156

. . . . . . . . . . . . . . . 299

~PD556

. . . . . . . . . . . . . . . . 153

~PB8212

. . . . . . • . . . . . . . . 307

. . . . . . . . . . . . . . . 125

~PB8214

. . . . . . , . . . . . . . . . 313

~PD650

. . . . . . . . . . . . . . . . 127

~PB8216

. . . . . . . . . . . . . . . 319

~PD651

. . . . . . . . . . . . . . . . 135

~PB8224

. . . . . . . . . . . . . . . 323

~PD652

. . . . . . . . . . . . . . . . 147

~PB8226

. . . . . . . . . . . . . . . 319

. . . . . . . • . . . . . . . 145

~PD557L

~PD765

. . . . . . . . . . . . . . . . 241

~PB8228

. . . . . . . . . . . . . . . 329

~PD781

. . . . . . . . . . . . . . . . 259

~PD8243

. . . . . . . . . . . . . . . 335

~PD782

. . . . . . . . . . . . . . . • 271

~PD8251

. . . . . . . . . . . . . . . 341

~PD2114L

~PD2118

..............

53

~PD8251A

...............

36

~PD8253

. . . . . . . . . . . . . . . 359

. . . . . . . . . . ..

59

~PD8255

. . . . . . . . . . . . . . . 367

j.£PD2147 '"
~PD2167

. . . . . . . . . . . . • . 341

...............

67

~PD8255A-5

~PD2308A

............ "

85

IlPD8257 . . . . . . . . . . . . . . . 375

~PD2316E

..............

89

~PD8259

93

~PD8279-5

97

~PD8355

~PD2332A/B

. . . . . . . . . . . "

II

PAGE

~PD2364

...............

~PD2716

. . . . . . . . . . . . . . . 101

~PD8741A

~PD2732

. . . . . . . . . . . . . . . 102

~PD8748

~PD3301

. . . . . . . . . . . . . . . 283

~PD8755A

. . . . . . . . . . . • . 367

. . . . . . . . .'. . . . . . 383
. . . . . . . . . . . . . . 399
. . . . . . . . . . . . . . . 409
. . . . . . . . . . . . . . 211
•.......... . . . . . 219
. . . . . . . . . . . . . . 409

5

·NEC

NEe Microcomputers, Inc.
ROM ORDERING PROCEDURE -

MEMORIES AND MICROCOMPUTERS

The following NEC products fall under the guidelines set by the ROM Ordering Procedure:
JlPD2308A
JlPD2316E
JlPD2332A/B
JlPD2364
JlPD7801
JlPD8021
JlPD8022
JlPD8041
JlPD8048

JlPD8049
JlPD8355
JlPD546
JlPD547
JlPD547L
JlPD548
JlPD550
JlPD552

JlPD553
JlPD554
JlPD554L
JlPD557 L
JlPD650
JlPD651
JlPD652
JlPD7520

In order to facilitate the transferal of ROM mask information, NEC Microcomputers, Inc., is able to ac.cept mask patterns
in a variety of formats. These are intended to suit various customer needs and minimize the turnaround time. A listing of
the code must always be enclosed. The following is a list of valid media for code transferal.
•
•
•
•
•
•
•

Sample ROMs or ROM-based microcomputers
PROM/EPROM equivalent to ROM parts
NEC JlPD458 EEPROM
BNPF Paper Tapes
Hex Paper Tapes
Timesharing Files
Other (Contact NEC Microcomputers, Inc., for arrangements.)

Thoroughly tested verification procedures protect against unnecessary delays or costly mistakes. NEC Microcomputers,
Inc., will return the ROM mask patterns to. the customer in the most convenient format. Unprogrammed EPROMs, if sent
with the ROM code can be programmed and returned for verification.
Earth satellites and the world-wide GE Mark III timesharing systems provide reliable and instant communication of ROM
patterns to the factory. Customers with access to GE-TSS may further reduce the turnaround time by transferring files
directly to N EC Microcomputers, Inc.
The following is an example of a ROM mask transferal procedure. The JlPD8048 is used here, however the process is the
same for the other ROM-based products.
1. The customer contacts NEC Microcomputers, Inc., concerning a ROM pattern for the JlPD8048 that he would
like to send.
2. Since an EPROM version of that part is available, the 8748 is proposed as a code transferal medium, or alternatively, a paper tape and listing.
3. Two programmed 8748's are sent to NEC Microcomputers, Inc., with a listing and a paper tape as back-up.
4. NEC Microcomputers, Inc" compares the media provided and enters the code into GE-TSS. The GE-TSS file is
accessed at the NEC factory and a copy of the code is returned to NEC Microcomputers for verification purposes.
One of the 8748's is erased and reprogrammed with the customer's code as the NEC factory has it. Both 8748's
along with a new papertape and listing are returned to the customer for his final verification.
5. Once the customer notifies NEC Microcomputers,lnc., in writing that the code Is verified, and provides the mask
charge and hard copy of the purchase order, work commences immed iately on the development of.h is JlPD8048s.

6

,

,

','

I
MEMORIES···

7

NEe

NEe Microcomputers, Inc.
MEMORY SELECTIO.N GUIDE

DYNAMIC RANDOM ACCESS MEMORIES
/lPD411

4K x 1 TS

NMOS

150 ns

380 ns

+12,+5,-5

D

22

/lPD411-4

4K x 1 TS

NMOS

135 ns

320 ns

+15, +5,-5

D

22

4K x 1 TS

NMOS

200 ns

400 ns

+12, +5,-5

C

22

/lPD416

16Kx 1 TS

NMOS

120 hs

320ns

+12, +5,-5

C/D

16

/lPD2118

16Kx 1 TS

NMOS

100 ns

235 ns

+5

D

16

. /lPD4164

64Kx1TS

NMOS

200 ns

375 ns

+5

D

16

22

/lPD411A

STATIC RANDOM ACCESS MEMORIES
256 x 4 TS

CMOS

450 ns

450 ns

'+5

C

/lPD44416514

1Kx4TS

CMOS

200 ns

200 ns

+5

C

18

/lPD445L

1K.x 4 TS

CMOS

450 ns

450 ns

+5

C

20

/lPD2167

16K x 1 TS

/lPD5101L

"

NMOS

35 ns

5505

+5

D

20

/lPD2114L

1Kx4TS.

NI\iIOS,

150 ns

150 ns

+5

C/D

18

/lPD2147

4K x 1:r~

NMOS.

55 ns

55 ns

+5

D

18

/lPD410

~Kx 1TS: .... NMOS

90 ns

220 ns

+12,+5,-5

C/D

22

/lPD421

1K x 8 TS

NMOS

150 ns

150 ns

+5

D

22

/lPD4104

4Kx1 TS

, NrylOS

150ns

260 ns

+5

C/D

18

MASK PROGRAMMED READ ONI- Y MEMORIES
/lPD2308A

' 1Kx8TS

NMOS

450 ns

450 ns

+1)

C/D

24

/lPD2316E

2K x 8TS

NMOS

450 ns

450 ns

+5

C

24

/lPD2332A/B

4Kx8T$ .

NMos.

:'450ns

450 ns

+5

C

24

/lPD2332A/B- r

4K x 8 TS

NMOS

350ns., , 350 ns

+5

C

24

" . BKx B TS

NMOS

-+5

C'

24

. '

'j.ipb23S4

,;

.

,'450 ns
"

450 ns

,"

.flELDPROGFlAMMABLE READ ONL Y MEMOIUES(U.V.ERASABLEJ
/lPD2716
/lPD2732

Notes: IF) • CDTS -

8

Future Product
Read Mode
Plastic Package
Hermetic. Pack"ge
3-State

NEe

NEe Microcomputers, Inc.
. MEMORY ALTERNATE SOURCE GUIDE

I

MANUFAcTURER

AMD

EM&M

: PART NUMBER
2716 '
8308
9016
9060
9107
9114
9124,
9147
9216
2114
4200
4300
4402
8108

'.

DESCRIPTION

NEC REPLACEMENT

2K x8 EPROM
lKx8ROM
16K x.l ,DRAM
4K x 1 DRAM
4K x 1 DRAM
'lKx4SRAM
lKx4.SRAM,
4Kx 1 SRAM
2Kx8ROM

pPD2716
pPD23P8A
pPD416.: .' ', ..,
pPD411/pPD411 A
. pPD411/jlPD411 A
pPD2114L
'pPD2114L
pPD2147
pPD2316E

·lKx 4 SRAM
4K x lSRAM
4K xl SRAM
4Kx 1 SRAM
lK x8SRAM

pPQ2l14L
pPD410
pPD41Q
JlPD410
IlPD421

FAIRCHILD

F2114 '
F2716
F16K

lK x4SRAM
2Kx8 EPROM
16K x 1 DRAM

pPD2114L
pPQ2716
pPD416

FUJITSU

MBM2147
MBM2716
MBM2732 "
MB8107
MB8114
MB8J16
MB8216
M~830a
MB8414

4K x.l SRAM
2Kx 8 EPROM
4Kx 8 EPROM
41< x 1 DRAM
·lKx4SRAM
16K x 1 DRAM'
16K x 1 DRAM
1.K x 1 .ROM
lK x 4SRAM

pPD2147
pPD2716
pPD2732
pPD411/pPD4l1A
pPD2114L
pPD416
pPD416
pPD2308A

"

pPD444/6514

.

HARRIS

HM6501
HM6514

256 x 4 SRAM
lKx4SRAM

pPD5101 L
pPD444/6514

HITACHI

HM435101
:HM4716A
HM4816
HM4864
HM6147

256x4 SRAM
16K x, 1 DRAM
16K x 1 DRAM
16K x 1 DRAM
4Kx 1 SRAM

pPD5101L
pPD416
pPD2118
pPD4164
pPD2147

INTEL

2197
21.14
2117
211~

2147
2308A
2316E
2332
2364
2716
2732
5101

4Kx 1 DRAM
"
lK x4SRAM
.16K x 1 DRAM
16Kx 1 DRAM
4K x 1 SRAM
lK x8 ROM
2Kx8 ROM
4K x8 ROM
8Kx 8 ROM ..
2Kx 8 EPROM
4K x8 EPROM
256 x4SRAM

pPD411/pPD411A
pPD2114L
pPD416
pPD2118
pPD2147
pPD2308A
pPD2316E
pPD2332A/B
pPD2364
pPD2716
pPDi132
pPD5101 L

J

I

NEe

NECMicrocomputers, Inc.
MEMORY ALTERNATE SOURCE GUIDE

I

10

MANUFACTURER

PART NUMBER

INTERSIL

IM7114

MITSUBISHI

M5L2114LP

MOSTEK

MK2147
MK2716
MK30000
MK32000
MK34000
MK36000
MK4104
MK4116
MK4164
MK4516

MOTOROLA

,

DESCRIPTION

NEC,REPLACEMENT

1 K x 4 SRAM

tLPD2114L

1Kx 4SRAM

tLPD2114L

4K xl SRAM
2K x 8 EPROM
1K x 8 ROM
4K x8 ROM
2K x8 ROM
8K x 8 ROM
4K xl SRAM
16K x 1 DRAM
64K x 1 DRAM
16K x 1 DRAM

tLPD2147
tLPD2716
tLPD2308A
tLPD 2332A/B
tLPD2316E
tLPD2364
tLPD4104
tLPD416
tLPD4164
tLPD2118

MCM145101
MCM2114
MCM2147
MCM2716
MCM4116
MCM4516
MCM6616
MCM6664
MCM68A308
MCM68A316E
MCM68317
MCM68A332
MCM68A364

256 x 4 SRAM
1K x 4 SRAM
4K xl SRAM
2K x 8 EPROM
16K x 1 DRAM
16K x 1 DRAM
16K x 1 DRAM
64K x 1 D.RAM
1024 x 8.ROM
2Kx8ROM
2K x 8 ROM
4K x 8 ROM
8K x8 ROM

tLPD5101 L
tLPD2114L
tLPD2147
tLPD2716
tLPD41 6
tLPD41 6
tLPD416
tLPD41 64
tLPD2308A
tLPD2316E
tLPD2316E
tLPD2332A/B
tLPD2364

NATIONAL

LH2308A
MM5257
MM5280A
MM5281
MM5290
MM74C920

1024 x 8 ROM
4K xl SRAM
4K x 1 DRAM
4K x 1 DRAM
16K x 1 DRAM
256 x 4 SRAM

,i!PD2308A
tLPD4104
tLPD411/tLPD411A
tLPD411/tLPD411A
tLPD41 6
tLPD5101L

RCA

MWS5114

SIGNETICS

2316
2680
2690

2K x8 ROM
4K x 1 DRAM
16K x 1 DRAM

tLPD2316E
tLPD411/tLPD411A
tLPD416

T.r.

TMS4044
TMS4045
TMS4060
TMS4116
TMS4700
TMS4732

4K
1K
4K
16K
1K
4K

tLPD4104
tLPD2114L
tLPD411/tLPD411 A
tLPD41 6
tLPD2308A
tLPD2332A/B

TOSHIBA

TC5047

1K x 4 SRAM

xl SRAM
x 4 SRAM
x 1 DRAM
x 1 DRAM
x 8 ROM
x8 ROM

1Kx4SRAM

tLPD444/6514

tLPD445L

I

NEe

NEe Microcomputers, Inc.

fLPD411
fLPD411·1
fL PD411·2
IL PD411·3
J£ PD411·4

FULLY DECODED RANDOM ACCESS MEMORY
DESCR I PTION

The I1PD411 Family consists of six 4096 words by 1 bit dynamic N-channel MOS
RAMs. They are designed for memory applications where very low cost and large bit
storage are important design objectives. The I1PD411 Family is designed using dynamic
circuitry which reduces the standby power dissipation.
Reading information from the memory is a non-destructive. Refreshing is easily
accomplished by performing one read cycle on each of the 64 row addresses. Each
row address must be refreshed every two milliseconds. The memory is refreshed
whether Chip Select is a logic high or. a logic low.

FEATURES

PIN CONFIGURATION

I

All of these products are guaranteed for operation over the 0 to 70°C temperature
range.
Important features of the I1PD411 family are:
• Low Standby Power
• 4096 words x.1 bit Organization
• A single low-capacitance high level clock input with solid ±1 volt margins,
• Inactive Power/0.3 mW (Typ.)
• Power Supply: +12, +5, - 5V
• Easy System Interface
• TTL Compatible (Except CE)
• Address Registers on the Chip
• Simple Memory Expansion by Chip Select
• Three State Output and TTL Compatible
• 22 pin Ceramic Dual-in-Line Package
• Replacement for INTEL'S 21078, TI'S 4060 and Equivalent Devices.
• 5 Performance Ranges:
ACCESS TIME

RIW CYCLE

RMWCYCLE

REFRESH TIME

JlPD411

300 ns

470 ns

650 ns

2ms

JlPD411-1

250 ns

470 ns

640 ns

2 ms

JlPD411-2

200 ns

400 ns

520 ns

2 ms

JlPD411-3

150 ns

380 ns

470 ns

2ms

JlPD411-4

135 ns

320 ns

320 ns

2 ms

vss

vss

Ag

AS

AlO
All

cs
DIN
DOUT

Address Inputs

A7

CE

Chip_Enable

A6

CS

Chip Select

VDO
CE

DIN

Data Input

NC

AO

PIN NAMES
AO-All
AO-A5

A5

Refresh Addresses

DOUT

Data Output

WE

Write Enable

VOD

Power (+12V)

VCC

Power (+5V)

VSS

Ground

Al

A4

VSS

Power

A2

A3

NC

No Connection

VCC

WE

Rev/3

11

}LPD411
FUNCTIONALDESCHIPTION

CE Chip Enable
A single external clock input is required. All read, write, refresh and read-modify·write
operations take place when chip enable input is high. When the chip enable is low, the
memory is. in the low power standbY mode. No read/write operations can take place
because the chip is automatically precharging.
CS Chip Select
The chip select terminal affects the data in, data out and read/write inputs. The data
input and data output terminals are enabled when chip select is low. The chip select
input must be low on or before the rising edge of the chip enable and can be driven
from standard TTL circuits. A register for the cnip select input is provided on the chip
to reduce overhead and simplify system design.
WE Write Enable
The read or write mode is selected through the write enable input. A logic high on the
WE input selects the read mode and a logic low selects the write mode. The WE
terminal can be driven from standard TTL circuits. The data input is disabled when the
read mode is selected.
AO-A" Addresses
All addresses must be stable on or before the rising edge of the chip enable pulse. All
address inputs can be driven from standard TTL circuits. Address registers are pro·
vided on the chip to reduce overhead and simplify system design.
DIN Data Input
Data is written during a write or read-modify·write cycle· while the chip enable is high.
The data in terminal can be driven from standard TTL circuits. There is no register on
the data in terminal.
DOUT Data Output
The three state output buffer provides direct TTL compatibility with a fan-out of two
TTL gates. The output is in the high·impedance (floating) state when the chip enable
is low or when the Chip Select input is high. Data output is inverted from data in.
Refresh
Refresh must be performed every two milliseconds by cycling through the 64 addresses
of the lower·order-address inputs AO through A5 or by addressing every row witnin any
2-millisecond period. Addressing any row refreshes all 64 bits in that row.
The chip does not need to be selected during the refresh. If the chip is refreshed during
a write mode, the Chip select must be high.

-oVDD
-oVCC
-Q

VSS

~VBB

CE

Al0
A9 All

12

BLOCK DIAGRAM

,.,.PD411
ABSOLUTE MAXIMUM
RATINGS*

pPD411-4

pPD411 FAMILY
(EXCEPT 411-4)

... 0°Cto+70°C
-55°C to +150°C
-0.3 to +20 Volts
-0.3 to +20 Volts
-0.3 to +20 Volts
- 0.3 to +20 Volts
. . . . . . . . 1.0W

Operating Temperature.
Storage Temperature
All Output Voltages ..
All Input Voltages ...
Supply Voltage VDD ..
Supply Voltage VCC
Power Dissipation ...

eimum Rating~': may cause permanent
damage to the device. This is a stress rating only and functional operation of the devi~e at thes'e or
any-other ,conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximUn1 rating conditions for extended periods may affect device
reliability.

DC CHARACTERISTICS

"Ta

= 25"C

Ta ""

aOc to 70°C, VOO = +12V ±5%. Vee = +5V is%, Vee = -5V ±5%, Vss = av.

II

Except Voo:z: +16V ±5" for 4114.
PARAMETER

LIMITS

SYMBOL
MIN

Input Load Current
CE Input

Load Current

TYP(!)

TEST CONOITIONS

III

0,01

10

~A

ILC

0,01

10

~A

ILO

0.Q1

10

~A

200

~A

CE = 1.0V to 0.6V

Output Leakage Current
for High Impedance State

UNIT
MAX

VOO Supply Current

VIN = VIL MIN to VIH MAX
VIN - VILC MIN to VIHC MAX
CE = VILC Of,CS ~N1IH
Vo = OV to 5.25V,"

IDO OFF

20

IODON

35@

6O@

mA

CE '" VIHC, Ta'" ~5°C

~PD411

IDOAV

37
37

Cycle Time

~PD411·2

IDD AV
IDOAV

mA
mA

Cycle Time = 470 ris

~PD41H

mA

Cycle Time

~PD411·3

IDDAV

"P04114

IDOAV

41
55

60
60
60
65
80

Isa

5

100

~A

ICC OFF

0.01

10

~A

.during'CE off
Voo Supply Current,
during CE on
Average Vee Current

VBB S~pply Current

®

Ta

37

Vec Supply Current
during CE off

@

mA
mA

Cycle Time"" 320 'I)S

VIL

1.0

0.6

Input High Voltage

VIH

2.4

VCC+l

V

CE Input Low Voitage

VILC

1.0

0.6

V

CE Input "'igh Voltage

VIHC

Output Low Voltage

VOL

0

Output High Voltage

VOH

2.4

Notes:

VOO

2'5°C

=470 ns
= 4.00 ns
cvcie Time = 380'M

Input Low Voltage

VOO-l

III

,<,,'.

CE =VILC orCS -Vifi

V

VOO+l

V

0.40

V

IPL = 3.2 mA

V

10H =2.0 mA

VCC

X MIN MAX

Cycle Time

'CY

Time BetWeen Refresh

'REF

Address to CE Set Up Time

'AC

0

0

0

0

0

ns

Address Hold Time

'AH

150

150

150

150

100

ns

CE Off Time

'cc

130

170

130

130

80

~E

tT

0

40

0

40

0

40

0

40

0

40

ns
ns

'CF

0

130

0

130

0

130

0

130

0

130

ns

CEon Time

'CE

300

3000

260

3000

230

3000

210

3000

200

3000

WE,o'CEoff

'W

180

180

150

150

65

ns

'cw

300

260

230

210

200

ns

'OW

0

0

0

0

0

ns

D,N Hold Time

'DH

40

40

40

40

40

ns

WE Pulse Width

'WP

180

180

150

100

65

ns

Transition Time

CE Off to Output High
Impedance State

CE to WE
D,N '0 WE Se,

Note:

0(. C'

~ I"
f"', l\.
I

t-

V
0<:'

SPEC LIMIT: .2m.A. 2.4V

"

20

V
,/

,~

VV
[Z

SPEC LIMIT: 3.2inA.O.4V

~.

~

v

V 1/

10

~

V

t-

.2
VOH(V)

VOO - Vas

r-~~Y
§

e-W-

14

~Q~ ~~--

13

,

J..'fI

1000

r-- ~~:::~~~E~EGIO~

i--

-

~

t-.... i'-

100

~

0

.:'-.

"
E

I'-..

JY~ t"-

"-

w

IF

·f

I"-- I'-..

10

11

SPE~ LI~T' ~. m,

t7'
~ ?~ t-

~.'

10

..."
-:l

i'-

-5

I I I

I~

-6

-7

60

-8

Vae (V)'

Power consumption = V DD x I DDAV + V BB x I BB .

POWER CONSUMPTION

Typica.1 power dissiption for each product is shown below.
mW(TYP.)

CONDITIONS.

450

'fa = 25° C;tCY = 470ns, tCE = 300ns

/oIPD411-1

. 450

-r- a =26° C, t~y= 470ns; tCE = 260ns

/oIPD411-2

. - 450

Ta = 25° C, tey= 400ns, tCE = 230ns

/oIPD411-3

550

Ta.= 25° C, tcy - 380ns, tCE = 21 Ons

/oIPD411-4

660

Ta - 25° C,tey = 320ns, :te.E - 200n5

/oIPD411

See above curves for power dissipation:versus eycle time.

16

JLPD411
300

100

CURRENT WAVEFORMS

~,.,
ICE ImAI

400

500

·I _ _·~\~C_·
.

' : f,---,--···

---,-..;.~_~_----.;...[\__. _

2:·.jt-----'-1--,-1
·20

r - ._ _ _ _ _

1"-----:-_ __

---,----\,,1\

120 ~~--~----------~--------~~----~--~~.----80 r---~r-~-------------------+-+~---------r~~~

IOOlmAI

IOOON

.40

w

r---------~--------~----------~~--------------

188 1mAI

·20 ~-----\--t-----'~----------------------------+-+-~

·40 '---------'.......--------------------------------~-""'----

PACKAGE OUTLINE
IlPD411D

~----------A----------~~

M

ITEM

A
B

MILLIMETERS

27.43 MAX
1.27 MAX

C

2.~±0.1

0
E
F
G
H
I

0.42 ± 0.1
25.4 ± 0.3
1.5 ± 0.2·
3.5. ± 0.3
3.7 ±0.3
4.2 MAX
5.08 MAX
10.l6±0.15
9.1 ±0.2
0.25 ± 0.05

J
K
L
M

INCHES

1.079 MAX
0.05 MAX
0.10
0.016
1.0
0.059
0,138
0.145
0.165 MAX
0.200 MAX
0.400
0.358
0.009

SP411-10-79-GY-CAT

17

I

NOTES

18

NEe

NEe Microcomputers, Inc.

","PD411A

","PD411A-1
","PD411A-2

4096 BIT DYNAMIC RAMS
DESCRIPTION

The tLPD411 A Family consists of four 4096 words by 1 bit dynamic N-channel MOS
RAMs. They are designed for memory applications where very low cost and large bit
storage are important design objectives. The tLPD411A Family is designed using
dynamic circuitry which reduces the standby power dissipation.
Reading information from the memory is non-destructive. Refreshing is easily
accomplished by performing one read cycle on each of the 611 row addresses. Each
row address must be refreshed every two milliseconds. The memory is refreshed Whether
Chip Select is a logic high or a logic low.

FEATURES

•

ll

Low Standby Power

• 4096 words x 1 bit Organization
• A single low-capacitance high level clock input with solid ±1 volt margins.
•

Inactive Power 0.7 mW (Typ.)

•

Power Supply +12, +5, -5V

•

Easy System Interface

• TTL Compatible (Except CE)
• Address Registers on the Chip
• Simple Memory Expansion by Chip Select
• Three State Output and TTL Compatible
•

LLpinPlastic Dual-in-Line,Package

•

Replacement for INTE L's 21078, Tl's 4060 and Equivalent Devices.

•

3 Performance Ranges:

~PD4llA
~PD4llA-l
~PD4llA-2

PIN CONFIGURATION

Vss
Ag
A10
A11

Cs
DIN

ACCESS TIME

R/W CYCLE

RMWCYCLE

REFRESH TIME

300 ns
250 ns
200 ns

470 ns
430 ns

650 ns
600 ns
520 ns

2 ms

400 ns

2ms
2 ms

PIN NAMES

Vss
AS

AO-All

Address Inputs

AO-A5

Refresh Addresses

A7

CE

Chip Enable

AS

es

Chip Select

VDD
CE

DIN

Data Input

DDUT
WE

Data Output
Write Enable

VDD

Power (+12VI

DOUT

NC

AO

As

A1

A4

AZ

1'.3

VCC

WE

VCC

Power (+5VI

VSS

Ground

VBB

(Pow•. -5VI

NC

No Connection

Rev!l

19

J-LPD411A
CE Chip Enable
A single external clock input is required. All read, write, refresh and read-modify-write
operations take place when chip enable input is high. When the chip enable is low, the
memory is in the low power standby mode. No read/write operations can take place
because the chip is automatically precharging.

FUNCTIONAL DESCRIPTION

CS Chip Select
The chip select terminal affects the data in, data out and read/write inputs. The data
input and data output terminals are enabled when chip select is low. The chip select
input must be low on or before the rising edge of the chip enable and can be driven
from standard TTL circuits. A register for the chip select input is provided on the chip
to reduce overhead and simplify system design.
WE Write Enable
The read or write mode is selected through the write enable input. A logic high on the
WE input selects the read mode and a logic low selects the write mode. The WE
terminal can be driven from standard TTL circuits. The data input is disabled when the
read mode is selected.
AO-All Addresses
All addresses must be stable on or before the rising edge of the chip enable pulse. All
address inputs can be driven from standard TTL circuits. Address registers are pro·
vided on the chip to reduce overhead and simplify system design.
DIN Data Input
Data is written during a write or read·modify·write cycle while the chip enable is high.
The data in terminal can be driven from standard TTL circuits. There is no register on
the data in terminal.
DOU:r Data Output
The three state output buffer provides direct TTL compatibility with a fan-out of two
TTL gates. The output is in the high·impedance (floating) state when the chip enable
is low or when the Chip Select input is high. Data output is inverted from data in.
Refresh
Refresh must be performed every two milliseconds by cycling through the 64 addresses
of the lower·order·address inputs AO through A5 or by addressing every row within any
2·millisecond period. Addressing any row refreshes all 64 bits in that row;
The chip does not need to be selected during the refresh. If the chip is refreshed during
a write mode, the chip select must be high.

BLOCK DIAGRAM
AO
A1

A2
A3

A4O--_'"i

AS

«
w

«
w
o

u.
u.

o
u

:::J
CIl

w

en
w

-----:

I-.--.()Cs
WE
TIMING
CE

20

GENERATOR

JA-PD411A
ABSOLUTE MAXIMUM
RATINGS*

Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . O°C to +70°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-'5SoC to +l25°C
Output Voltagelr-_-+- V'H
DIN CAN CHANGE

----r--tt---------'lf--------4-~~\~~~~-V"

'CO--_

Dour =-HiGH- -

-I-'----'@'t======::jr-l
Ii

---rl-__-_L7-_-_-_-'A-CC-_-_-_.:;_~_~_-_-_~~4--------~---~~~~_VOL
IMPEDANCE

Notes:

CD

UNDEFINED

(J)

For refresh cycle, row and column addresses must be stable tAC and
remain stable for entire tAH per'iod.

®

VDD - 2V is, the. reference level for measuring timing of CE,.

@

VSS

@

VIHMIN is the referencEl level for measuring timing of the addresses,
CS, WE and DIN.

@

+ 2V is the reference level for measuring ti~ing of CEo

VILMAX is the reference level for measuring timing of the addresses,
and DIN.

CS, WE

®

VSS

(j)

VSS

+ O.SV is the reference level for measuring timing of DOUT.

®

WE

must be at V I H until end of teo'·

+ 2.0V is the reference level for measuring timing of DOUT·

23

t ODAV ..... ICY

70

60

1-1- I-

1.25

I I
II
SpJC'LI~IT

T 'I

1\

I

t CE =,

I I
J I

~

"'i', ',"

l/
"

1

'"

S

'0.25

II I I
I I I I I
IOH~ V OH

I"

30

I'

~

I'---

IOL - VOL
50

·40

_0

- I--

NORMALIZED CYCLE TIME

50

E

I

2 .

50

h! C}

:<

J

CONST. -

,,\

0.5

.. -'--

Typ DOAV

~- ....,.rcyrli~· 400n
30

I-- I- I--IMIN:MUJ CY~LE ~,'MEI-- I--

.. 1.0

-~

·20

'" ~
"""
" """

10

1/

"v / V
,.'%v /'
l/'l

>-

">0" 0"

20

I'\.

f-

1,/

V

40

I"

TYPICAL OPERATING
CHARACTERISTICS

SPEC LIMIT; .2rrt,2.4V

10

~

~

I
I

/ V

//
h
,/-

SPEC LIMIT: 3.2mA,O.4V

I-

0

ttL
r~~

Voo - VBB

14

13

:E
0
>0

12

::!

~;

,..

1000

'""'-

r- 6~~R:ri~~E~EGtON

!""

k>

I"--

~I~I

100

v-

...............

J
w
~

I

10

11

10 "

10

./

c.7'

SP~1 ,LltT :

~ c.._

fms

I I
20

40
Ta eel

60

·B

·4

POWER CONSUMPTION

Power consumption = VDD x IDDAV + VBB x IBB
Typical power dissipation for each product is shown below,

mW(TVP.1

CONDITIONS

~PD411A

460mW

. Ta = 25 C, tcy= 470 ns, tCE = 300 ns

~PD411A.l

460mW

T a = 25°C, tty = 430 ns, tCE = 260 ns

j.lPD411A·2

460mW

T a = .25°C,. tcy = 400 ns, tCE = 230 ns

See curve above for power dissipation verSuS cyel!! time.

24

,",PD411A

CURRENT WAVEFORMS.: 

w

10

(.)

>

5

0

50

100

150

200

250

300

350

Aoo

450

500

TIME (ns)

100.
80
~

.5

60

0

9

•

.40
20

0

50

100

l!?O

200

300

350

400

450

500

TIME (ns)

30
~

.5

'"

!!'

20
10
0
450

500

-10

-20

~

40

.5
(.)

!:?

30
20
10

0

50

100

200

150

250

300

350

400

450

500

TIME (ns)

~

.5

w

30
20

!:?
10
251')

0

I

I

50

100

150

200

300,

3!\Q

400

450

I

500

..

TIME (ns)

-10
-20
-30

Note:



Relative to VBB
Relative to VSS

COMMENT: Stress above those I,Isted Under "Absolute Maximum Ratings" mav cause permanent
damage to the device. This Is a stress rating only and functional operation of the device at these or
any other conditions above those Indicated in the operational sections of th is specification is not
Implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.

*Ta = 25°C
T a = O°C to 70°C, VDO = +12V ± 10%, VBB = -5V ± 10%, VCC = +5V ± 10%,
VSS= OV
PARAMETER
I nput Capacitance
(Ao-A6), DIN
I nput Capacitance
RAS, CAS, WRITE
Output Capacitance
(DOUT)

28

SYMBOL

MIN

LIMITS
TYP MAX

UNIT

CIl

4

5

pF

CI2

8

10

pF

Co

5

7

pF

TEST
CONDITIONS

CAPACITANCE

f'PD416
DC CHARACTERISTICS

Ta

~ O°C to +70°CC!),

VDO

= +12V

±

10%, VCC

= +5V

±

10%, Vee

= -5V

±

10%, VSS

LIMITS
PARAMETER

UNIT

SYMBOL

MIN'

TYP

MAX

Supply Voltage

VDO

10.8

12.0

13.2

V

Supply Voltage

VCC

4.5

5.0

5.5

V

Supply Voltage

VSS

0

0

0

V

Supply Voltage

Vss

- 4.5

-5.0

-5.5

V

@
@@
@
@

Input High. I Logic 11
Voltage, RAS, CAS,
WRITE

VIHC

2.7

7.0

V

@

VIH

2.4

7.0

V

@

VIL

- 1.0

0.8

V

Input High'ILogic 11
Voltage, all inputs

except RAS, CAS

= OV

TEST
CONDITIONS

WRITE
Input Low '( Logic 0)

Voltage, all inputs
Operating VOO Current

Standby VOO Current

RefreShl~1l Speeds.
VOD

35

IDOl

1.5

1002

rnA
rnA

RAS = VIHC, 00UT
::: Hi9h Impedance

except IlP0416-5

IOD3

25

rnA

IlP0416-5

ID03

2·7

rnA

Currentl

Page Mode V D D
Current
Operating
Current

Vee

Standby Vee Current

27

ID04

ICC2

-10

10
• ___0 -

II

®

RAS cycling, CAS =
VIHC; tRC = 375 ns

®

RAS - VIL, CAS
cyCling; tpc =.
225ns@

rnA

IlA

ICCl

@
RAS, CAS cycling;
tRC = tRC Min.

I

IlA

-.---

RAS, CAS cycling,

tRC = 375 ns@
RAS = VIHC,
00UT = H~gh
Impedance

-.-

RAS cycling;
Refresh

Vee Current

ICC3

-10

10

IlA

CtiS·=
iRC

Page Mode VCC

Current

ICC4

=

VIHC.
375 n,

IlA

RAS = VIL. CAS
cyclmg, tpc
225n,@

ISSl

200

IlA

RAS. CAS cycling;
tRC - 375 n,

Standby VSS
Current

ISS2

100

IlA

RAS" VIHC,
DOUT" H'gh
Impedance

Refresh Vse
Current

ISS3

200

IlA

CtiS =

Operating VSS
Current

Page Mode'VSS

Current

Input Leakage

RAS
200

ISS4

IlA

IIIL!

-10

10

IlA

Output Leakage

IOILI

-10

10

IlA

Output Low Voltage
I Logic 01

VOH
VOL

2.4
0.4

= VIL,

CAS

cycling;

tpc

(any input)

Output High Voltage
I Logic 11

RAS cycling,
VIHC;
= 375 ns

'RC

= 225 ns

VSS - -5V, OV '"
VIN '" +7V,
all other pins not
under test::: OV
.DOUT is disabled,.
OV '" VOUT '" +5.5V

V

lOUT

= -5 rnA@

II

lOUT

= 4.2 rnA

Notes:C!) T a 'is 'specified here for operation at frequencies to tRC::;;' tRC (min). Operation at higher cycle rates with reduced
ambient temperatures and high power dissipation is permissible, however, provided Ae operating parameters are met.
See Figure 1 for derating curve.
.
@Allvoltages referenced to VSS.
.
cr:> OutPut voltage will swing from VSS to Vee when activated with no current loading. For purposes of maintaining
data in standby mode, Vee may be reduced to VSS without affecting refresh operations or data retention. However,
the VOH (min) specification is not guaranteed in this mode.
@ 1001, 10D3, and 1004 depend on cycle rate. See Fi,gures 2, 3 and 4 for 100 limits at other cycle rates.

® il:;'~d~~~~~f3'5~~~~1 tU:~~t~~t~t~~~~j~~h~Ut\~:~~~o~~s~s~~g~f l~vae~aC:t~u~~~ti: ~~v~ected through' a low

2.9

p.PD416
DERATING CURVES
CYCLE T(ME tRC (nsl
320
500 400 375

1000

300 250

50 rnA
I'PD416-5

1000

u
°

70

500

I
-Ta(MAX)

4O~

320
1375 1:00

,,:
:;;
60

ffZ

w

iii
:;
50

-'

q(~~

0..
0..

~y "

;:)

en

20 rnA

_0

.~./

X

-'
0..
0..

:l
III

20 rnA

~

o
o

-

X

~ lOrnA

.....

o

---- -"\'{\',

.....

o
o

1.0

2.0

3.0

CYCLE RATE (MHz) = 10 3 /tRC (ns)
FIGURE 3
Maximum I D03 versus cycle rate for device
operation at extended frequencies.

30

SPEC LIMIT

u

4.0

o

1 .0

2.0

3.0

4.0

5.0

CYCL,E RATE (MHz) = 10 3 /tRC (ns)
FIGURE 4
Maximum IDD4 versus cycle rate for device
operation in page mode.

6.0

fLPD416
AC
CHARACTERISnCS

T. = o"C mHO·C, VOD· +12V:Il ~h. Vcc· tSV

t

1• • VBB""-I,v':i: 10%. V$s·,,:2 V
~lilliTS

TEST
CONDITIONS
~rnrf!ldorWfit•

.;y... ,,,",, "

,'~tj.,...fri:l~
Access time fr~m

,CAs' ,

@®

,

, ",,200

Output buffer
lU:rn-off del,ay'

tOFF

ttilniitlOntitne
!~!tIt and fall~

I. rn pT.chlirg. tim. .

,"T " /

mhokftim8'

"3

"'AS

,300

IRSH

200

. teAS

~

I"

CAs' purse wi~th

35

'0
',3

200

. AAs pul .. ~ttl

®®

80

100

,120

150

10.000

250

:'0,OQO

10.000

1~

200

32,000

10.000

135

15Q

32.000

100

135

166'

10,000

100

, 35

100

100

120

10,000

80
.10.000

80

,10,000

RASto~d8lav
time

II

®

CASto~

precharge time

Aowaddress
S8t-uptime

Rowaddr.

lRAH

hold time
Colurnn~ress

set-uptime

Column address

leAH

hold Time

Column address hold
time referenced to
"AS

40

35

-10

-10

90

75

190

160

25

20

15

~,o

-10

55

45

40

120

95

80

-10,

Read command
set-uptlme

,0

Read command
hold time

,0

Write command
hold time

90

75

55

190

160

120

90

'n.

40

Write command

hold time
,.flfeneed to FiAS

tWCA

Write command
pulse width

'WI'

Write cOmmand to
RAs lead time

tRWL

120

Write command
CASlnd time
"

tCWL

120

Data-in set-up time

'OS

to

®

.5

:

70

40

50

50

50

50

45

tDHA

190

150

120

95

.0

'ep

120

100

" ,80

60

60,

twcs

,20

-20

-20

-'20

CAS to WAITE
deJay

tewD

140

125

95

70

80

AASto WAITE
deley

tAWD

240

200

150

120

120

CAS precharge time
(for page mode
cycle' sn Iy)
pe~iod

®
®

',0

55

Refresh

@

95

70

75

Dete·in hold time
referenced to FiAS

WA ITE1:ommand
set,uptime

G)

. ',"55

60

,90

Data·in hold time'

Notes:

75

95

40

tREF
'no

@

@

Ac measurements assume IT = 5 ns.
.
VIHC (min) or VII; (mini and

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