1981_Motorola_Optoelectronic_Device_Data 1981 Motorola Optoelectronic Device Data
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MOTOROLA
OPTOELECTRONIC
DEVICE DATA
• OPTO-COUPLERS
• EMITTERS & DETECTORS
• FIBER OPTICS
OPTOELECTRONICS
General Information •
Selector Guide and Cross-Reference
II
Data Sheets •
Applications Information •
FIBER OPTICS
General Information •
Selector Guide •
Data Sheets
Applications Information •
MOTOROLA
OPTOELECTRONIC
DEVICE DATA
Prepared by
Technical Information Center
Motorola has concentrated on infrared, GaAs emitters, silicon detectors,
high-technology opto coupler/isolators and an innovative approach to Fiber
Optic components, modules and links. This Optoelectronic Data Book contains
up-to-date specifications on the complete product line.
The catalog is divided into the two major sections of Opto and Fiber Optics.
The Table of Contents and Alphanumeric Index cover all products. Each
section has its own General Information, Selector Guide, and Data Sheets.
All devices listed are available direct from Motorola and from Motorola's
Authorized Distributors. Applications assistance and information on pricing
and delivery are available from the nearest Motorola sales office.
Motorola reserves the right to make changes to any product herein to
improve reliability, function or design. Motorola does not assume any liability
arising out of the application or use of any product or circuit described herein;
neither does it convey any license under its present patent rights nor the rights
of others.
Printed in U.S.A.
Second Printing
©MOTOROLA INC., 1981
Previous Edition ©1980
"All Rights Reserved"
Annular, Straight Shooter and Unibloc are trademarks of Motorola Inc.
CONTENTS
Page
ALPHANUMERIC INDEX
iii
OPTOELECTRONICS
CHAPTER 1 - GENERAL INFORMATION .............................................. 1-1
The Motorola Spectrum of Optoelectronics ...................................................... 1-2
Optical Isolators/Couplers ........................•........•..........................•.... 1-3
Optoelectronic Definitions ..................•...........................•.................. 1-5
CHAPTER 2 - SELECTOR GUIDE AND CROSS-REFERENCE ....................... 2-1
Opto Couplers/Isolators ......•..............................................................•. 2-2
Transistor Output ......................•...•........•..........•............•......... 2-2
Darlington Output ....................................•............................•.. 2-2
Triac Driver Output ........................................................•.••....... 2-3
Digital IC Output ...................................................................... 2-3
Linear Amplifier Output ...........................•...............•.•................. 2-3
SCR Output .......................................................................... 2-4
SCR Cross-Reference .........................•...•................................... 2-4
Infrared-Emitting Diodes ..........................•.................•...•..........•...... 2-5
Silicon Photo Detectors .....................................................•............. 2-5
Photodiodes ...........................•...•.......................................... 2-5
Phototransistors .........................•............................................ 2-6
Photodarlingtons ..................•.....•...•.•.............•..........•............. 2-6
Photo Triac Drivers .......................•......................................•..... 2-6
Cross-Reference ........................•..•..................•........•.................. 2-7
CHAPTER 3 - DATA SHEETS .;........................................................ 3-1
Data Sheet Listing (See Page 3-2)
CHAPTER 4 - APPLICATIONS INFORMATION ....................................... 4-1
AN-440
- Theory and Characteristics of Phototransistors ..•......•.•...................... 4-2
AN-50B
-
Applications of Phototransistors in Electro-Optic Systems ........................ 4-13
AN-571 A -
Isolation Techniques Using Optical Couplers ..............•..................... 4-27
AN-7BOA -
Applications of the MOC3011 Triac Driver ...................................... 4-35
FIBER OPTICS
CHAPTER 5 - GENERAL INFORMATION .............................................. 5-1
Fiber Optics .......•.•...................•.............•....•................................. 5-2
Basic Concepts of Fiber Optics and Fiber Optic Communications .............................• 5-3
Basic Fiber Optic Terminology ..•...••.........................•............................ 5-23
CHAPTER 6 - SELECTOR GUIDE ...................................................... 6-1
Infrared Emitters .......•.........•..........................•............................ 6-2
Photo Detectors ......................................•..•................................ 6-2
Transmitters ...................................•........•...............•................ 6-3
Receivers ........................................•.............................•........• 6-3
Links .........................•.......................................................... 6-4
Accessories ..............................•.•.•.•.....•..•..............•...•............. 6-4
CONTENTS (continued)
Page
CHAPTER 7 - DATA SHEETS
7-1
Data Sheet Listing (See Page 7-2)
CHAPTER 8 - APPLICATIONS INFORMATION ....................................... 8-1
AN-794 - A 20-Mbaud Full Duplex Fiber Optic Data Link Using
Fiber Optic Active Components ..•............•.....•...................•... 8-2
AN-804 - Applications of Ferruled Components to Fiber Optic System ...........•.....•..... 8-30
MFOL02 - Theory of Operation ..........••..•....•..•................•.................•. 8-38
Fiber Optic Circuit Ideas
20-Megabaud Data Link .. , ............................................................ 8-43
10-Megabaud Data Link .............................................................•. 8-44
2.0-Megabaud Data Link .....................................•.....................•.. 8-45
1.0-Megabit System .................................................................. 8-46
1OO-Kilobit Receiver ..........................................•........•.............. 8-48
1/10/100 Kilobit Receiver ...............•....................•....................... 8-49
Darlington Receiver ..•.........................•.......•.............................. 8-50
Phototransistor Receiver .............................................................. 8-50
A Microcomputer Data Link Using Fiber Optics .............................................. 8-51
ii
ALPHANUMERIC INDEX
Device
Page
Device
3-3
3-3
3-3
3-3
3-5
3-5
3-5
3-5
3-5
3-9
MCT274
MCT275
MCT277
MFOD100
MFOD102F
MFOD104F
MFOD200
MFOD202F
MFOD300
MFOD302F
3-90
3-90
3-90
7-3
7-5
7-7
7-9
7-11
7-13
7-15
MRD160
MRD300
MRD310
MRD360
MRD370
MRD450
MRD500
MRD510
MRD3010
MRD3011
3-66
3-69
3-69
3-73
3-73
3-77
3-80
3-80
3-83
3-83
4N29A
4N30
4N31
4N32
4N32A
4N33
4N35
4N36
4N37
4N38
3-9
3-9
3-9
3-9
3-9
3-9
3-13
3-13
3-13
3-17
MFOD402F
MFOD404F
MFOD405F
MFOE100
MFOE102F
MFOE103F
MFOE106F
MFOE200
MFOL01
MFOL02
7-17
7-21
7-25
7-29
7-31
7-33
7-35
7-37
7-39
7-41
MRD3050
MRD3051
MRD3054
MRD3055
MRD3056
TIL111
TIL112
TIL 113
TIL114
TIL 115
3-86
3-86
3-86
3-86
3-86
3-90
3-90
3-90
3-90
3-90
4N38A
H11A1
H11A2
H11A3
H11A4
H11A5
H11A520
H11A550
H11A5100
H11 B1
3-17
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
MLED60
MLED90
MLED92
MLED93
MLED94
MLED95
MLED900
MLED930
MOC119
MOC1005
3-23
3-23
3-25
3-27
3-27
3-27
3-29
3-31
3-33
3-37
TIL116
TIL117
TIL 119
TIL124
TIL125
TIL126
TIL127
TlL128
TIL 153
TlL154
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
H11B2
H11B3
H11B255
IL1
IL12
IL 15
IL74
L14H1
L14H2
L14H3
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-21
3-21
3-21
MOC1006
MOC3002
MOC3003
MOC3007
MOC3009
MOC3010
MOC3011
MOC3020
MOC3021
MOC3030
3-37
3-41
3-41
3-41
3-44
3-44
3-44
3-48
3-48
3-50
TIL155
TIL156
TIL 157
3-90
3-90
3-90
L14H4
MCA230
MCA231
MCA255
MCT2
MCT2E
MCT26
MCT271
MCT272
MCT273
3-21
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
3-90
MOC3031
MOC5003
MOC5004
MOC5010
MOC8020
MOC8021
MOC8030
MOC8050
MRD14B
MRD150
3-50
3-53
3-53
3-55
3-57
3-57
3-59
3-59
3-3
3-63
Device
2N5777
2N5778
2N5779
2N5780
4N25
4N25A
4N26
4N27
4N28
4N29
Page
iii
Page
iv
OPTOELECTRONICS
General Information •
Motorola Optoelectronic products include infrared-emitting diodes, silicon
photo detectors and opto-couplers/isolators.
Motorola is the leader in high technology opto-couplers. For control of 110
and 220 Vac lines, the triac drivers (MOC3010, MOC3020, MOC3030) are
unequaled.
All Motorola opto-couplers have a minimum isolation voltage of 7500 Vac
peak, the highest available. The broad opto-coupler,line includes nearly all
the transistor, Darlington, SCR, and Triac output devices now available in
the industry.
Each device is presented in the easy-to-use Selector Guide and is included
in a detailed data sheet in a succeeding section.
'
1-1
•
The Motorola Spectrum of
OPTOELECTRONICS
INFRARED-LIGHT-EMITTING DIODES
Photodiodes
The infrared-light-emitting diode emits radiation in the
near infrared region when forward bias current (IF) flows
through the PN junction. The light output power (PO) is
a function of the drive current (IF) and is measured
in milliwatts.
Infrared-light-emitting diodes are used together with
photosensors.
Radiation falling at the PN junction will generate hole
electron pairs which cause the carriers to move, thus
causing a current flow (ILJ. The power density of the
radiation H (measured in mW/cm') determines the current
flow, IL. At zero radiation, a small leakage current, called
dark current (10) will remain.
FIGURE 1
FIGURE 3
FIGURE 2 - Constant Energy Spectral Response
100
;r
/
80
U>
0
~
60
/
U>
W
'">
g
40
20
_\ Diode
/
\
/
J
o
0.4
0.5
0.6
The phototransistor is a light radiation controlled
transistor. The collector base junction is enlarged and
works as a reversed biased photodiode controlling the
transistor. The collector current, 'L, depends on the
radiation density (H) and the dc current gain of the
transistor. Under dark condition, the transistor is switched
off; the remaining leakage current, ICEO, is called collector
dark current.
~-
-
\
./
W
;::
I~frared
. \ / Emitting
w
z
"'-1\
/
Phototransistors
0.7
0.8
\
FIGURE4
\
0.9
1.0
1.1
1.2
'. WAVELENGTH (Pm)
PHOTOSENSORS
Silicon photosensors respond to the entire visible
radiation range as well as to the near infrared radiation
range. The radiation response of a photosensor is a
function of the material and the diffusion depth of the
light-sensitive PN junction. All silicon photosensors
(diodes, transistors, darlingtons, triacs) show the same
basic radiation frequency response which peaks in the
near infrared radiation range. Therefore, the sensitivity
range of Motorola silicon sensors is ideally suited to.
Motorola infrared-emilting diodes.
Base
Collector
1-2
Emitter
Photodarlingtons
The photodarlington works on the same principle as
a phototransistor. The collector base junction of the driver
transis.tor is radiation sensitive and controls the
driver transitor. The driver transistor controls the following transistor. The darlington configuration yields
a high current gain which results in a photodetector
with very high light sensitivity.
FIGURE 5
FIGURE 6
+
Phototriacs
The gate of the phototriac is radiation sensitive and
triggers the triac at a certain speCified radiation density
(H). At dark condition, the triac is not triggered. The
remaining leakage current is called peak blocking current
( IDRM). The device is bilateral and designed to switch
ac signals.
so
~ Optical Isolators/Couplers
DO
r
ISOLATORS
FIGURE 7 - BASIC OPTO ISOLATOR (COUPLER)
An optoelectronic isolator contains both an IRED
and a photodetector in the same package, arranged so
that energy radiated from the IRED is efficiently coupled
to the detector through a clear, isolating dielectric. An
opaque material surrounds the dielectric and provides
ambient light protection.
Since there is no electrical connection between input
and output, and since gallium-arsenide emitters and silicon
detectors cannot reverse their roles, a signal is able to pass
through the isolator in one direction only. To a degree
determined by the package input-output capacitance and
dielectric characteristics, the device is unresponsive to
common mode input signals and provides input circuitry
protection from the output circuit environment. Ground
loop prevention, dc level shifting, and logic control of
high voltage power circuitry are therefore typical areas
where isolators are very useful.
The measure of an isolator"s ability to "~fficiently pass
a desired signal is most commonly referred to as Current
Transfer Ratio (CTR). It is dependent upon the radiative
efficiency of the IRED, the spacing between the IRED
and the detector, the area and sensitivity of the detector,
and the amplifying gain of the detector. lt is subject to
the nonlinearities (current, voltage, temperature) of
both chips, causing a rather complex transfer function
which should be evaluated closely when used at nonspecified conditions.
The ability of an isolator to provide standoff protection is usually expressed as an Isolation Surge Voltage
and is essentially a measure of the integrity of the package
and the dielectric strength of the insulating materials.
ISOLATING
DIELECTRIC
(LIGHT PIPE)
ISOLA TlON VOLTAGE
The primary function of an optoelectronic isolator
is to provide electrical separation between input and
output, especially in the presence of high voltages.
The amount of stress that an isolator can safely withstand
and the stability of this protection varies considerably
with package construction techniques used.
Figure 8 shows an older isolation technique, where the
light transmission medium is a small amount of a clear,
silicone-rubber type of material. Surrounding it is usually
a black epoxy or phenolic compound. It has been found
that the weakest point in this approach is the interface
between the "light-pipe" and the overmold. It is a relatively short path between lead frames along this interface,
and the two materials are dissimilar enough that the
integrity of the interface is usually poor. This technique
initially gives marginal standoff protection and stability
1-3
•
•
with an associated test duration, while continuous ratings
must be the result of a well-controlled, well-characterized
assembly technique and realistic generic data. Since ac
conditions are usually the most severe, it has become
common to give them the most attention.
ISOLATION VOLTAGE
FIGURE 8 - Standard
UNDERWRITERS' LABORATORIES RECOGNIZED
Most Motorola isolators are available under the Underwriters' Laboratories Component Recognition Program.
It should be noted that applicable Motorola isolators are
recognized for use in applications up to 240 Vac. Under
the U.L. criteria, these devices must have passed isolation
voltage tests at approximately 5000 volts ac peak for
one second. In addition, Motorola tests every coupler to
7500 V ac peak for 5 seconds.
FIGURE 9 - Motorola
COUPLER PROCESS FLOW/QUALITY CHECK POINTS
Every optocoupler manufactured by Motorola undergoes extensive in-process checks for quality. After each
process step (for example, die bond, encapsulation,
electrical test, etc.) the product is randomly sampled.
If the sample does not pass high-quality standards, the
product flow is halted and corrective action is taken.
In this manner, quality is built in at Motorola.
under voltage stress is very poor.
Figure 9 shows Motorola's improved construction
technique. The clear dielectric used here is a transfermolded epoxy that encompasses a large volume of the
interior of the package. The overmold is a transfer-molded
opaque epoxy. The result is a much longer interface
(typically ten times longer) between two very similar,
electrically stable compounds. Minimum specified isolation
voltage capability is 7500 volts ac peak on all Motorola
isolators, and typical units provide in excess of 12,000
volts ac peak protection on a reliable, repeatable basis
(in a clean and low humidity environment). External
ambient conditions (humidity, cleanliness, etc.) tend to
be the limiting factors when using Motorola isolators.
Representative test data at typical applied voltages are
shown below:
Test
No. of Units Appliad Voltage
FIGURE 10 - Coupler Process Flow/Quality Check Points
Die Bond
and Break
Inspection
Point
a.A. Die Bond
Inspection Point
Die Wetting,
Location, Damage
Failure @ 1000 Hrs
A
100
1500 V
ae peak
0
B
100
5000 V dc peak.
0
Wire Bond
Isolation voltage has been specified in terms of both
dc and ac conditions, sometimes with no associated test
duration. In general, ac conditions are more severe
Ihan dc. Any imperfections or discontinuities in the
isolating dielectric tend to have a lower dielectric constant
than the surrounding areas and assume a disproportionate
share of the total ac applied field, in the same manner that
the smallest capacitance in a series string assumes the
highest voltage drop under ac conditions. Microscopic
ruptures can occur at these points, causing localized
degradation and propagation of the weakened areas until
large-scale puncture occurs. Dc fields tend to distribute
more linearly. Additionally, ac fields are more effective
in causing mobile impurities to align themselves and
produce leakage paths.
Continuous ratings are therefore difficult to guarantee
reliably as the result of individual unit testing or sorting.
Instead,.surge isolation voltage ratings should be specified
Electrical
Screen
a.A. Wire Bond
Inspection Point
Visual and Wire Pull
o
Mechanical and
Molding Operations
Process
a.A.
Inspection
Final a.A. Visual
Inspection
Lead Frame and
Package Quality
LEGEND
100% Electrical
Screen
Final Test Q.A.
Electrical and Visual
1-4
OPTOELECTRONIC DEFINITIONS, CHARACTERISTICS, AND RATINGS
CTR
Current Transfer Ratio - The ratio of
output current to input current, at a specified bias, of an opto coupler.
dv/dt
Commutating dv/dt - A measure of the
ability of a triac to block a rapidly rising
voltage immediately after conduction of
the opposite polarity.
Coupled dv/dt - A measure of the ability
of an opto thyristor coupler to block when
the coupler is subjected to rapidly
changing isolation voltage.
E
Luminous Flux Density (Illuminance)
[lumens/ft. 2 = ft. candles) - The radialion flux density of wavelength within the
band of visible light.
H
Radiation Flux Density(lrradiance)
[mW/cm 2 j - The total incident radiation
energy measured in power per unit area.
ICEO
Collector Dark Current - The maximum
current through the collector terminal of
the device measured under dark conditions, (H = 0), with a stated collector
voltage, load resistance, and ambient
temperature. (Base open)
10
Dark Current - The maximum reverse
leakage current through the device measured under dark conditions, (H = 0), with
a stated reverse voltage, load resistance,
and ambient temperature.
1FT
Input Trigger Current - Emitter current
necessary to trigger the coupled thyristor.
IL
Collector Light Current - The device
collector current measured under defined
conditions of irradiance, collector voltage,
load resistance, and ambient temperature.
Triac
from the 10% point to the 90% point when
pulsed with the stated GaAs (galliumarsenide) source under stated conditions
of collector voltage, load resistance, and
ambient temperature.
A thyristor which can block or conduct in
either polarity. Conduction is initiated by
forward bias of a gate-MTI junction.
Tstg
Storage Temperature
V(BR)R
Reverse Breakdown Voltage - The
minimum dc reverse breakdown voltage
at stated diode current and ambient temperature.
V(BR)CBO Collector-Base Breakdown VoltageThe minimum dc breakdown voltage, collector to base, at stated collector current
and ambient temperature. (Emitter open
and H = 0)
V(BR)CEO
Collector-Emitter Breakdown Voltage The minimum dc breakdown voltage,
collector to emitter, at stated collector
current and ambient temperature. (Base
open and H = 0)
V(BR)ECO
Emitter-Collector Breakdown Voltage The minimum dc breakdown voltage,
emitter to collector, at stated emitter
current and ambient temperature. (Base
open and H = 0)
VCBO
Collector-Base Voltage - The maximum
allowable value of the collector-base
voltage which can be applied to the device
at the rated temperature. (Base open)
VCEO
Collector-Emitter Voltage - The maximum allowable value of collector-emitter
voltage which can be applied to the device
at the rated temperature. (Base open)
Rs
Series Resistance - The maximum
dynamic series resistance measured at
stated forward current and ambient temperature.
VECO
Emitter-Collector Voltage - The maximum allowable value of emitter-collector
voltage which can be applied to the device
at the rated temperature. (Base open)
SCR
Silicon Controlled Rectifier - A reverse
blocking thyristor which can block or
conduct in forward bias, conduction
between the anode and cathode being
initiated by forward bias of the gate
cathode junction.
VF
Forward Voltage - The maximum forward voltage drop across the diode at
stated diode current and ambient temperature.
VISO
Isolation Surge Voltage - The dielectric
withstanding voltage capability of an
optocoupler under defined conditions
and time.
VR
Reverse Voltage - The maximum allowable value of dc reverse voltage which can
be applied to the device at the rated temperature.
AS(l'm)
Wavelength of maximum sensitivity in
micrometers.
tf
tr
Photo Current Fall Time - The response
time for the photo-induced current to fall
from the 90% point to the 10% point after
removal of the GaAs (gallium-arsenide)
source pulse under stated conditions of
collector voltage, load resistance and
ambient temperature.
Photo Current Rise Time - The response
time for the photo-induced current to rise
1-5
•
•
1-6
OPTOELECTRONICS
Selector Guide and Cross-Reference •
2-1
OPTICAL
COUPLERS/ISOLATORS
•
Transistor Output
Isolation Voltage is 7500 V (Min)
on all devices See notes
DC Current
V(BRICEO
Device
Transfer
Volts
Type
Rallo
Min
%Min
Couplers are designed to provide isolation protection
from high-voltage transients, surge voltage, or low-level
noise that would otherwise damage the input or generate erroneous information. They allow interfacing
systems of different logic levels, different grounds, etc.,
that would otherwise be incompatible. Motorola
couplers are tested and specified to an isolation voltage
of 7500 Vac peak.
Motorola offers a wide array of standard devices with
a wide range of specifications (including the first series
of DIP transistors and Darlington couplers to aChie've
JEDEC registration: transistors - 4N25 thru 4N38, and
Darlingtons - 4N29 thru 4N33). All Motorola couplers
are UL Recognized with File Number E54915.
TI1112
TIU15
IllS
MCT26
Till"
TIll14
MOC1006
1112
4N27
4N28
H',A4
TlL124
TIL,S3
IL74
MOC100S
TIl12S
Tlll54
4N25
4N26
Hl1A2
Hl1A3
Hl1A520
IU
MCT2
TIL11S
4N3B
Hl1A5
MCT271
HllAl
Hl1A550
CASE 730A
Tll117
TI1126
TI1155
CNY17
The Transistor Coupler is probably the most
popular form of isolator since it offers moderate
speed (approximately 300 kHz), sensitivity and
economy. In addition, the collector-base junction can be used as a photodiode to achieve
higher speeds. The output in the diode mode is
lower, requiring amplification for more usable
output levels.
MCT275
MCT272
MCT277
4N35
4N36
4N37
Hl1A5100
MCT273
MCT274
2.0
2.0
6.0
6.0
8.0
8.0
10
,0
'0
'0
'0
'0
'0
12.5
20
20
20
20
20
20
20
20
20
20
20
20
30
45
50
50
50
50
50
62
70
75
100
100
100
100
100
125
225
20
20
30
30
30
30
30
20
30
30
30
30
30
20
30
30
30
30
30
30
30
30
30
30
30
80
30
30
30
30
30
30
30
70
80
30
30
30
30
30
30
30
30
Darlington Output
Isolation Voltage is 7500 V (Min)
on all devices See notes
DC Current
V(BRICEO
Oevice
Transfer
Volts
Type
Ratio
Min
%Min
4N31
HllB3
4N29
4N30
MCA230
Hl1B255
MCA255
HllB2
MCA231
MOC119*
TIL119*
TIL113
MOC8030'
TlL127
Tll128*
TIL 156
TlL157*
Hl1Bl
4N32
4N33
MOC8020'
MOC8050'
MOC8021·
The Darlington Transistor Coupler is used when
high transfer ratios and increased output current
capability are needed. The speed, approximately
30 kHz, is slower than the transistor type but the
transfer ratio can be as much as ten times as
high as the single transistor type.
50
100
100
100
100
100
100
200
200
300
300
300
300
300
300
300
300
500
500
500
500
500
1000
30
25
30
30
30
55
55
25
30
30
30
30
80
30
30
30
30
25
30
30
50
80
50
.. Pm 3 and Pm 6 are not connected.
Noles:
1 Isolall0n Surge VOltage. Visa. IS an Internal devlcedlelecInc breakdown rating For thiS lest LEO PinS 1 and 2 are
common and phototranSISlor plns4. 5. and6are common
2 All Motorola couplers are speCified at 7500 Vae peak (5
seconds) ThiS lIsmHly exceeds the ongmalor"s speclflcalion and JEOEC registered values
3 See Case 730A-Ol. Style 3
2-2
OPTICAL COUPLERS/ISOLATORS (continued)
Triac Driver Output
The Triac Driver Output Coupler is a galliumarsenide IRED, optically coupled to a silicon
bilateral switch designed for applications requiring isolated triac triggering such as interface
from logic to 110/220 V RMS line voltage. These
devices offer low current, isolated ae switching;
high output blocking voltage; small size; and.
low cost.
Isolation Voltage is 7500 V (min)
on all devices. See notes.
Device Type
Peak Blocking
Voltage
Volts
LED Trigger Current
rnA
Max
MOC3009
MOC3010
MOC3011
MOC3020
MOC3021
MOC3030'
MOC3031'
MOC3040'
MOC3041'
Mu
30
15
10
30
15
30
15
250
250
250
400
400
250
250
30
15
400
400
With Zero-Crossmg Detector
The Digital Logic Coupler is a gallium-arsenide
IRED optically coupled to a high-speed integrated detector. Designed for applications
requiring electrical isolation, fast response time,
and digital logic compatibility such as interfacing
computer terminals to peripheral equipment.
digital control of power supplies. motors. and
other servo machine applications.
Intended for use as a digital inverter. the application of a current to the IRED input results in a
LOW voltage; with the IRED off the output voltage
is HIGH.
Digital
Ie
Output
Isolation Voltage is 7500 V (min)
on all devices. See notes.
Output Voltage
Device Type
MOC5003
MOC5004
The Optically-Isofated AC Linear Coupler is a
gallium-arsenide IRED optically coupled to a
bipolar monolithic amplifier. Converts an input
current variation to an output VOltage variation
while providing a high degree of electrical isolation between input and output. Can be used for
telephone line coupling. peripheral equipment
isolation. audio and other applications.
@IF= 16 rnA
@IF= 0
VCC = 5.0 V VCC = 5.0 V
'Sink = 10 mA
Volts Min
Votts Max
0.6
0.6
ton/loff
",5
Max
4.0
4.0
2.0
1.2
Linear Amplifier Output
Isolation Voltage is 7500 V (min).
See notes.
Single Ended
Device Type
MOC5010
2-3
Transfer Gain
Distortion
@VCC = 12 V,
@ VCC = 12 V,
rnVlrnA
Isig = 1.0 rnA
Typ
'IoTyp
200
0.2
•
OPTICAL COUPLERS/ISOLATORS (continued)
SCR Output
SCR Couplers
•
Isolation Voltage is 7500 V (min)
on all devices.
The SCR Output Coupler is a gallium-arsenide
IRED optically coupled to a photo sensitive silicon
controlled rectifier (SeR). It is designed for applications requiring high electrical isolation between
low voltage circuitry like integrated circuits, and
the BC line.
Device Type
1
Cathode
NC
. . . ----n
Peak Blocking
Voltage
VAK:50V VAK'" 100 V
RGK =10 k!t RGK ~27 k!!
Volls
Max
30
20
MOC3002
MOC3003
Anode
LED Trigger Current
mAMax
6
SCR Gate
2
5
SCR Anode
3
4
SCR Cathode
14
11
These SCR Couplers are interchangeable with many devices available in the industry.
Device
Manufacturer
Motorola
Equivalent
HllCl
GE
MOC3003
HllC2
GE
MOC3003
HllC3
GE
MOC3002
MCS2
GI
MOC3002*
OPI4201
Optron
MOC3003
OPI4202
Optron
MOC3002
SCSllCl
Spectronics
MOC3003
SCSllC3
Spectronics
MOC3002
*Minor electrical difference
2-4
250
250
INFRARED-EMITTING DIODES
Infrared (900 nm) gallium-arsenide emitters are available from Motorola for use
in light modulators, shaft or position encoders, punched card and tape
readers, optical switching and logic circuits. They are spectrally matched for
use with silicon detectors.
Peak Emission Wavelength = 900 nm (Typ)
Forward Voltage @ 50 mA = 1.2 (Typ).
•
Emission Angle- Angleatwhich IRemission
is 15% of maximum intensity.
Device Type
Emission
Angle
a
Instantaneous
Power Output
Actual Size
MLED930
30·
650.W @ 100 rnA
Actual Size
MLED92
MLED93
MLED94
MLED95
110"
650.W
3.0 rnW
5.0 rnW
8.0 rnW
Package
~
Case 209-02 Metal
~
Case 29-02 Plastic
•
•
Typ
@ 100 rnA
@ 100 rnA
@ 100 rnA
@ 100 rnA
SILICON PHOTO DETECTORS
A variety of silicon photo detectors are available for a wide range of light detecting
applications. Devices are available in packages offering choices of viewing angle
and size in either low-cost, economical, plastic cases or rugged, hermetic, metal
cans. Advantages over photo tubes are high sensitivity, good temperature
stability, and proven silicon reliability. Applications include card and tape
readers, pattern and character recognition, shaft encoders, position sensors,
counters, and others. Maximum sensitivity occurs at approximately 800 nm.
Photodiodes
Photodiodes are used where high speed is required (1.0 ns).
Type
Package
~~.-.-.,
J;)
Convex Lens
Case 210-01 Metal
Flat Lens
Number
•
•
Light Current
H
/"A
@
mW/cm'
Typ
V(BRJR
Volts
Min
Dark Current
nA
Volts
@
Max
Actual Size
MRDSOO
9.0
5.0
100
2.0
20
Actual Size
MRD510
2.0
5.0
100
2.0
20
2-5
SILICON PHOTO DETECTORS (continued)
Phototransistors
Phototransistors are used where moderate sensitivity and medium speed (2.01'5) are required .
•
Light Current
mW/cm:l
V(BR)CEO
Volts
Min
Actual Size
MRD310
MRD300
2.5
7.5
5.0
5.0
50
50
25
25
20
20
Actual Size
L14H4
L14Hl
L14H2
L14H3
0.5
0.5
2.0
2.0
10
10
10
10
30
60
30
60
100
100
100
100
10
10
10
10
Actual Size
MRD3050
MRD3051
MRD3054
MRD3055
MRD305B
0.2
0.2
1.2
1.8
2.5
5.0
5.0
5.0
5.0
5.0
30
30
30
30
30
100
100
100
100
100
20
20
20
20
20
Type
Number
Package
~ase
~
82-05 Metal
Case 29-02
, /Case 82-05 Melal
•
•
•
mA
Typ
@
H
Dark Current
nA
VCE
@
Max
Volt.
Photodarlingtons
Photodarlingtons are used where maximum sensitivity is required with typical rise and fall times of 50 1'5.
Type
Number
Package
~ase
~
82-05 Metal
Case 29-02 Plastic
•
Light Current
mA
H
@
Typ
mW/cm'
V(BR)CEO
Volts
Min
Dark Current
nA
Volt.
@
Max
Actual Size
MRD370
MR0360
10
20
0.5
0.5
40
40
100
100
10
10
Actual Size
MR014B
2N5777
2N5778
2N5779
2N5780
2.0
4.0
4.0
8.0
8.0
2.0
2.0
2.0
2.0
2.0
12
25
40
25
40
100
100
100
100
100
12
12
10
12
12
•
Photo Triac Drivers
Photo triac drivers contain a light sensitive Ie acting as a trigger device for direct interface with a triac.
Type
Number
Package
~
•
Actual Size
Case 82-05
MR03010
MRD3011
Trigger'
Sensitivity
H
mW/cm'
Typ
On-State
RMS Current
mA
Max
Off-State Output
Terminal Voltage
Volts Peak
Min
Peak
Blocking
Current
nA
Typ
100
100
250
250
10
10
1.0
0.5
"'rradiance level to Latch Output.
2-6
CROSS-REFERENCE
The following is a cross-reference of all known optoelectronic devices at
the time of printing. This list is meant to serve as a substitution guide for
existing competitive devices to Motorola's optoelectronic product line.
Motorola's nearest equivalent devices are selected on the basis of general
similarity of electrical characteristics. Interchangeability in particular applications is not guaranteed. Before using a substitute, please compare the detailed
specifications of the substitute device to the data sheet of the original device.
In the event the device we recommend does not exactly meet your needs,
we encourage you to k)ok for another device from the same line source
which will have similar characteristics, or contact your nearest distributor or
Motorola sales office for further information.
CODE
A
B
C
D
E
= Direct Replacement
= Minor Electrical Difference
= Minor Mechanical Difference
=Significant Electrical Difference
= Significant Mechanical Difference
2-7
•
CROSS-REFERENCE
Motorola
Device
•
Manufacturer
BP10l
BP102
BPW14
BPW15
BPW16
Siemens
BPW17
BPW24
BPW30
BPX25A
BPX25
Telefunken
Telefunken
Telefunken
Philips
BPX29A
BPX29
BPX37
BPX38
BPX43
Philips
BPX58
BPX59
BPX62-1
BPX62-2
BPX62-3
BPX62-4
BPX70, C, D, E
BPX72, C, D, E
BPX81
BPY62
Description
TO~ 18
Lensed Phototransistor
TO·18 Lensed Phototransistor
TO·18 Lensed Phototransistor
Equivalent
Code
MRD3050
MRD3050
MRD300
MRD602
MRD160
C
C
A
A
A
TO-1S Lensed Phototransistor
MRD160
L14Hl
MRD360
MRD370
MRD300
A
C
A
A
A
Siemens
TO·1S
TO-1S
TO-1S
TO-1S
TO-1S
MRD370
MRD310
MRD300
MRD3055
MRD'300
A
A
A
A
A
Siemens
Siemens
Siemens
Siemens
Siemens
TO-1S Lensed Phototransistor
TO·1S Lensed Photodarlington
PI LL Lensed Phototransistor
PILL Lensed Phototransistor
PI LL Lensed Phototransistor
MRD300
MRD360
MRD601
MRD602
MRD603
A
A
A
A
A
Siemens
Philips
Philips
Siemens
Siemens
PI LL Lensed Phototransistor
Plastic Lensed Phototransistor
Plastic Lensed Phototransistor
Plastic Lensed Phototransistor
TO-1S Lensed Phototransistor
MRD604
MRD450
MRD450
MRD160
MRD3050
A
BE
BE
A
A
CL100
CLll0
CL1lOA
CL1lOB
CLI-2
Centralab
Centralab
Centraiab
Centralab
Clairex
TO-18
TO-18
TO-18
TO-18
B·Pin DIP, Coupler, Transistor Output
MLED930
MLED930
MLED930
MLED930
4N38
B
A
A
B
B
CLI-3
CLI-5
CLI-l0
CLR2050
CLR2060
Clairex
Clairex
Clairex
Clairex
Clairex
B·Pin DIP, Coupler, Transistor Output
6-Pin DIP, Coupler, Transistor Output
B-Pin DIP, Coupler, Transistor Output
TO-1S Lensed Photodarlington
TO-1S Lensed Photodarlington
4N35
4N26
4N33
MRD3050
MRD360
B
A
B
A
A
CLR2110
CLR2140
CLR2150
CLR2160
CLR2170
Clairex
Clairex
Clairex
Clairex
Clairex
TO-1S
TO·1S
TO-1S
TO·1S
TO·1S
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Photodarl ington
MRD310
MRD310
MRD300
MRD300
MRD370
A
A
A
A
A
CLR2180
CLT3020
CLT3030
CLT3160
CLT3170
Clairex
Clairex
Clairex
Clairex
Clairex
TO-1S Lensed Photodarlington
PILL Lensed Phototransistor
PI LL Lensed Phototransistor
PI LL Lensed Phototransistor
PI LL Lensed Phototransistor
MRD360
MRD601
MRD602
MRD603
MRD604
A
A
A
A
A
CLT4020
CLT4030
CLT4060
CLT4070
CNY17
Clairex
Clairex
Clairex
Clairex
Siemens
PI LL
PI LL
PI LL
PI LL
6·Pin
MRD601
MRD602
MRD603
MRD604
CNY17
E
E
E
E
A
CNY21
CQY10
CQYll,B,C
CQY12, B
CQY13
Telefunken
Pro Electron
Philips
Philips
Pro Electron
TO-18 Lensed LR. LED
TO-18 Lensed I.R. LED
TO-18 Lensed LR. LED
E
B
B
B
B-Pin DIP, Coupler, Transistor Output
4N25
MLED930
MLED930
MLED930
4N26
CQY14
CQY15
CQY31
CQY32
CQY36
Pro
Pro
Pro
Pro
Pro
B-Pin DIP, Coupler, Transistor Output
B·Pin DIP, Coupler, Transistor Output
G-Pin DIP, Coupler, Transistor Output
6-Pin DIP, Coupler, Transistor Output
Plastic DIP, Coupler, Transistor Output
4N26
4N26
MLED930
MLED930
MLED60
Siemens
Telefunken
Pro Electron
Telefunken
Philips
Philips
Philips
Philips
Electron
Electron
Electron
Electron
Electron
PI LL Lensed Phototransistor
Plastic Lensed Photatransistor
Plastic Lensed Phototransistor
TOw92 Lensed Phototransistor
TO-18 Lensed Photodarlington
TO-1S Lensed Photodarlington
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Photodarlington
Photatransistor
Phototransistor
Phototransistor
Phototransistor
I.R.
LR.
LR.
LR.
LED
LED
LED
LED
Lensed Phototransistor
Lensed Phototransistor
Lensed Phototransistor
Lensed Phototransistor
DIP Coupler Transistor Output
Long DIP Coupler Transistor Output
2-8
B
B
B
B
B
B
CROSS-REFERENCE (continued)
Motorola
Device
CQV40,41
CQV80
EE60
EEIOO
EP2
Manufacturer
ITT
Telefunken
EEP
EEP
EEP
Description
6~Pin
DIP, Coupler,
6·Pin DIP, Coupler,
Plastic, Lensed LA.
Plastic, Lensed I.R.
S-Pin DIP, Coupler,
Equivalent
Code
Transistor Output
Transistor Output
LED
LED
Transistor Output
4N26
MOC1OO5
MLED60
MLED60
4N26
A
B
C
E
.B
MAD3055
MAD3056
MAD310
4N27
4N27
A
A
A
A
A
EPV62·1
EPV62·2
EPV62-3
FCD810, A
FCD810, B, C, D
EEP
EEP
EEP
Fairchild
Fairchild
TO-18 Lensed Phototransistor
TO-18 Lensed Phototransistor
TO-18 Lensed Phototransistor
S-Pin DIP, Coupler, Transistor Output
G-Pin DIP, Coupler, Transistor Output
FCD820,A
FCD820, B
FCD820, C, D
FCD825, A
FCD825, B
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
G-Pin
G-Pin
G-Pin
G-Pin
G-Pin
DIP,
DIP,
DIP,
DIP,
DIP,
Coupler,
Coupler,
Coupler,
Coupler,
Coupler,
Transistor
Transistor
Transistor
Transistor
Transistor
Output
Output
Output
Output
Output
4N26
4N25
MOC1OO5
4N35
4N35
A
A
B
A
FCD825C, D
FCD830,A
FCD830, B
FCD830,C, D
FCD831, A
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
6-Pin
S-Pin
S-Pin
S-Pin
S-Pin
DIP,
DIP.
DIP,
DIP,
DIP,
Coupler,
Coupler,
Coupler,
Coupler,
Coupler,
Transistor
Transistor
Transistor
Transistor
Transistor
Output
Output
Output
Output
Output
4N35
4N26
4N25
4N26
4N27
A
A
A
A
A
FCD831,8
FCD831, C, D
FCD836
FCD836C, D
FCD850C, D
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
6-Pin
6-Pin
6-Pin
S-Pin
6-Pin
DIP,
DIP,
DIP,
DIP,
DIP,
Coupler,
Coupler,
Coupler,
Coupler,
Coupler,
Transistor Output
Transistor Output
Transistor Output
Transistor Output
Darlington Output
4N25
MOClOO6
4N27
MOC1OO6
4N29
A
A
A
A
A
FCD855C, D
FCD860C,D
FCD865C, D
FPEIOO
FPE410
FPE500
FPE520
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
6-Pin DIP, Coupler, Darlington Output
6-Pin DIP, Coupler, Darlington Output
6-Pin DIP, Coupler, Darlington Output
FPTIOO
FPTlOO, A
FPT100, B
FPT120, A
FPT120, B
FPT120,C
FPTl31
FPT132
FPT220
FPT400
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
4N29
4N32
4N32
MLED930
MLED930
MLED930
MFOE200
MADl60
MAD160
MAD160
MAD450
MAD450
MAD300
MAD160
MADl60
MAD160
MAD360
A
A
B
A
B
B
0
E
E
E
E
E
B
E
E
E
A
FPT500, A
FPT510
FPT510, A
FPT520
FPT520A
FPT530A
FPT450A
FPT550A
FPT560
FPT570
GG686
GS10l
GS103
GS161
GS163
GS165
GS167
GS201
GS203
GS261
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
Gen'l Sensors
TO-1S, Lensed, Transistor
TO-1S, Lensed, Transistor
TO-1B, Lensed, Transistor
TO-1S, Lensed. Transistor
TO-1B, Lensed, Transistor
TO-1S, Lensed, Transistor
TO-1S, Lensed, Transistor
TO-1S, Lensed, Transistor
TO-1B, Lensed, Phototransistor
TO-1B, Lensed, Phototransistor
TO-1B, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PI LL, Lensed, Phototransistor
PI LL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PI LL, Lensed, Phototransistor
PI LL, Lensed, Phototransistor
MAD300
MAD3054
MAD3055
MAD300
MAD300
MAD300
MAD300
MAD300
MAD300
MAD360
MAD300
MAD601
MAD601
MAD601
MAD601
MAD604
MAD604
MADGOI
MAD601
MADGOI
A
A
A
A
B
A
B
B
B
A
B
A
A
A
A
A
A
E
E
E
TO-18, Lensed, LR. LED
TO-18, Lensed, LA. LED
TO 18, Lensed, LA. LED
Metal, FO, IAED
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Darlington Transistor
2-9
A
•
CROSS-REFERENCE (continued)
Device
•
Manufacturer
Description
Motorola
Equivalent
Code
MRD601
MRD604
MRD604
MRD604
MRD601
E
E
E
E
E
MRD601
MRDS04
MRD300
MRD3050
MRD3050
E
E
A
A
A
6-Pin DIP Coupler Transistor Output
6~Pin DIP Coupler Transistor Output
MRD300
MRD300
MRD300
Hl1Al
Hl1A2
A
A
A
A
A
GE
GE
GE
GE
GE
6-Pin DIP
6~Pin DIP
6-Pin DIP
6~Pin DIP
6~Pin DIP
Coupler Transistor
Coupler Transistor
Coupler Transistor
Coupler Transistor
Coupler Transistor
Hl1A3
Hl1A4
Hl1A5
Hl1A520
HllA550
A
A
A
A
A
Hl1A5100
H74Al
H11AAl
HllAA2
HllB1
GE
GE
GE
GE
GE
6~Pin
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Darlington Output
HllA5100
4N26
4N26
4N27
Hl1Bl
A
B
0
0
A
HllB2
Hl1B3
HllB255
HllCl,2
HllC3
GE
GE
GE
GE
GE
6~Pin
Hl1B2
Hl1B3
HllB255
MOC3003
MOC3002
A
A
A
A
A
H74Cl
IL 1
IL5
IL 12
GE
6-Pin DIP Coupler SCR Output
Litronix
Litronix
Litronix
6-Pin DIP Coupler Transistor Output
6~Pin DIP Coupler Transistor Output
6-Pin DIP Coupler Transistor Output
IL 15
IL 16
IL 74
ILA30
ILA 55
Litronix
Litronix
Litronix
Litronix
Litronix
6~Pin
DIP
DIP
6~Pin DIP
6~Pjn DIP
6-Pin DIP
I LCA2-30
I LCA2-55
IRL40
IRLSO
L8, L9
Litronix
Litronix
Litronix
Litronix
6~Pin
L14Fl
L14F2
L14Gl
L14G2
L14G3
GS263
GS265
GS267
GS501
GS503
Gen"
Gen"
Gen"
Gen'l
Gen'l
Sensors
Sensors
Sensors
Sensors
Sensors
GS561
GS567
GSSOO, 3, 6, 9,10
GS612
GS670
Gen'l
Gen'l
Gen"
Gen"
Sensors
Sensors
Sensors
Sensors
GSSSO
GS683
GS686
Hl1A1
H11A2
Gen'l Sensors
Gen" Sensors
Gen" Sensors
GE
GE
TO-18, Lensed, Phototransistor
TO-1S, Lensed, Phototransistor
TO-1S, Lensed, Phototransistor
Hl1A3
HllA4
HllA5
H11A520
H11A550
Gsn" Sensors
PI LL. Lensed, Phototransistor
PILL, Lensed, Phototransistor
PI LL. Lensed, Phototransistor
PI LL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
PILL, Lensed, Phototransistor
TOM18, Lensed, Phototransistor
TO-18. Lensed, Phototransistor
TO-18, Lensed, Phototransistor
DIP
DIP
6~Pin DIP
6~Pin DIP
6~Pin DIP
6~Pin
Output
Output
Output
Output
Output
DIP Coupler Darlington Output
DIP Coupler Darlington Output
6~Pin DIP Coupler Darlington Output
6~Pin
6-Pin DIP Cou·pler SCR Output
6-Pin DIP Coupler SCR Output
MOC3003
ILl
4N25
1L12
B
A
B
A
IL15
1L16
IL74
4N33
4N33
A
A
A
B
B
B
GE
TO-1S Lensed I.A. LED
PlastiC, Lensed I.R. LED
TO-18 Lensed Phototriac
4N33
4N33
MLED930
MLED60
MRD3011
B
B
A
0
GE
GE
GE
GE
GE
TO-18
TO-18
TO-18
TO-18
TO-18
MRD360
MRD370
MRD300
MRD310
MRD310
A
A
A
A
A
L14Hl
L14H2
L14H3
L14H4
L15E
GE
GE
GE
GE
GE
TO-92 Phototransistors
TO-92 Phototransistors
TO-92 Phototransistors
TO-92 Phototransistors
PI LL, Lensed, Phototransistor
L14Hl
L14H2
L14H3
L14H4
MRD603
A
A
A
A
A
LISA
L15AX601
L15AX602
L15AX603
L15AX604
GE
GE
GE
GE
GE
PI LL,
PILL,
PI LL,
PILL,
PILL,
MRD602
MRD601
MRD602
MRDS03
MRD604
A
6~Pin
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Darlington Output
Coupler Darlington Output
DIP Coupler Darlington Output
6-Pin DIP Coupler Darlington Output
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed,
Lensed,
Lensed,
Lensed,
Lensed,
Photodarlington
Photodarlington
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
2-10
A
A
A
A
CROSS-REFERENCE (continued)
Motorola
Device
Description
Manufacturer
Equivalent
Cod.
Litronix
Litronix
Plastic,
TO-1B,
Plastic,
Plastic,
Plastic.
loR. LED
Lensed, loR. LED
Lensed, Phototransistor
Lensed, Phototransistor
Lensed, Phototransistor
MLE060
MLE0930
MR0450
MR0450
MRD450
C
A
E
E
E
M-161
M-162
(M-163
M-l64
M-165
GI
GI
GI
GI
GI
Plastic,
Plastic,
Plastic,
Plastic,
Plastic,
Lensed,
Lensed,
Lensed,
Lensed,
Lensed,
MROl60
MR0160
MR0450
MR0450
MR0450
C
C
E
E
E
ME60
ME61
ME702
MCA230
MCA231
GI
GI
GI
GI
GI
MLE060
MLE060
MLE0900
MCA230
MCA231
C
C
E
A
A
MCA255
MCS2
MCT2
MC2E
MCT26
GI
GI
GI
GI
GI
A
6-Pin, DIP, Coupler Transistor Output
6-Pin, DIP, Coupler Tr!)nsistor Output
6·Pin, DIP, Coupler Transistor Output
MCA255
MOC3002
MCT2
MCT2E
4N27
OP123
OP124
OP130
OP131
OP160
Optron
Optron
Optron
Optron
Optron
PILL, Lensed, loR. LED
PILL, Lensed, loR. LED
TO-1B, Lensed, loR. LED
TO-1S, Lensed, loR. LEO
Plastic, Lensed, loR. LED
MLE0910
MLE0910
MLE0930
MLE0930
MLED900
A
A
A
A
E
OP500
OP600
OP601
OP602
Optron
Optron
Optron
Optron
Plastic, Lensed, Phototransistor
PILL, Lensed Phototransistor
PILL, Lensed Phototransistor
PI LL, Lensed Phototransistor
MR0450
MR0601
MR0601
MRD602
E
A
A
A
OP603
OP604
OP640
OP641
OP642
Optron
Optron
Optron
Optron
Optron
PI LL,
PILL,
PILL,
PILL,
PI LL,
MR0603
MR0604
MR0601
MR0601
MR0602
A
A
A
A
A
OP643
OP644
OPBOO
OPBOl
OPB02
Optron
Optron
Optron
Optron
Optron
PI LL, Lensed Phototransistor
PILL, Lensed Phototransistor
TO·18 Lensed Phototransistor
TO·18 Lensed Phototransistor
TO·18 Lensed Phototransistor
MR0602
MR0603
MR03055
MR03050
MR0310
A
A
A
A
A
OPB03
OP804
OPB05
OP830
OPlll0
Optron
Optron
Optron
Optron
Optron
TO·18 Lensed Phototransistor
TO·18 Lensed Phototransistor
TO·18 Lensed Phototransistor
TO·18 Lensed Phototransistor
6·Pin, DIP, Coupler Transistor Output
MR0300
MR0300
MR0300
MR0300
MOC1005
A
A
A
A
DE
OPI2150
OPI2151
OPI2152
OPI2153
OPI2250
Optron
Optron
Optron
Optron
Optron
S·Pin,
6·Pin,
S·Pin,
I)..Pin,
S·Pin,
MOC1006
4N27
4N26
4N26
MOC1006
A
A
A
0
A
OPI2251
OP12252
OP12253
PC503
S01440-1,-2,-3,-4
Optron
Optron
Optron
Spectronics
S·Pin, DIP, Coupler Transistor
6·Pin, DIP, Coupler Transistor
S·Pin, DIP, Coupler Transistor
6~Pin, DIP, Coupler Transistor
PILL, Lensed Phototransistor
MOC1006
4N25
4N25
4N26
MR03050
A
A
0
A
DE
S02440-1
S02440-2
S02440-3
S02440-4
S02441-1
Spectronics
Sp8Ctronics
Spectronics
Spectronics
Spectronics
PI LL,
PILL,
PI LL,
PI LL,
PI LL,
MR0601
MR0602
MR0603
MR0604
MR0602
A
A
A
A
A
L0261
LED 56, F
LPT
LPT100A
LPT100B
Siemens
GE
Utronix
Sharp
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Plastic, Lensed, I.R. LEO
Plastic, Lensed, loR. LED
Plastic, Lensed. I.R. LED
6-Pin, DIP, Coupler Darlington Output
6-Pin, DIP, Coupler Darlington Output
6-Pin, DIP, Coupler Darlington Output
6-Pin, DIP, Coupler SCR Output
Lensed
Lensed
Lensed
Lensed
Lensed
DIP,
DIP,
DIP,
DIP,
DIP,
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Lensed
Lensed
Lensed
Lensed
Lensed
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
2-11
Output
Output
Output
Output
B
A
A
B
•
CROSS·REFERENCE (continued)
Device
II
SD2441-2
SD2441-3
SD2441-4
SD3420-l,-2
SD5400-l
SD5400-2
SD5400-3
SD5420-1
SD5440-1
SD5440-2
SD5440-3
SD5440-4
SD5442-l,-2.-3
Manufacturer
Spectronics
Spectronics
Spectronics
Spectronics
Spectronics
Spectronics
Spectronics
Spectronics
Spectran ies
Spectronics
Spectronics
Spectronics
Spectran ies
Description
PI LL, Lensed Phototransistor
PI Ll, Lensed Phototransistor
PILL, lensed Phototransistor
TO·1B, Flat Window Pin, Photodarlington
TO-1B, Lensed Photodarlington
TO-1S, Lensed Photodarlington
TO·1S,
TO-1S,
TO-1S,
TO·1S,
TO·1S,
TO-1S,
TO-1S,
TO 18,
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Lensed
Photodarlington
Photodarlington
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Motorola
Equivalent
Code
MRD603
MRD604
MRD604
MRD510
MRD370
MRD360
MRD360
MRD500
MRD3052
MRD3056
MRD300
MRD300
MRD300
MLED930
A
A
B
A
A
A
A
A
A
A
A
B
B
E
MLED9l0
MLED910
MLED930
MLED930
MLED910
B
B
A
B
B
S E 1450 series
Spectronics
SE2450 series
SE2460 series
SE5450 series
SE5451 series
SG1001 series
Spectronics
Spectronics
Spectronics
Spectronics
RCA
PI LL, Lensed loR. LED
PI LL, Lensed loR. LED
TO-18, Lensed loR. LED
TO-18, Lensed loR. LED
PILL, Lensed loR. LED
SPX2
SPX2E
SPX4
SPX5
SPX6
Spectronics
Spectronics
Spectronics
Spectronics
Spectronics
6-Pin
6-Pin
6-Pin
6-Pin
6-Pin
DIP,
DIP,
DIP,
DIP,
DIP,
Coupler
Coupler
Coupler
Coupler
Coupler
Transistor
Transistor
Transistor
Transistor
Transistor
Output
Output
Output
Output
Output
4N35
4N35
4N35
4N35
4N35
A
A
A
A
A
SPX26
SPX28
SPX35
SPX36
SPX37
SSL4, F
SSL34,54
Spectronics
Spectronics
Spectronics
Spectronics
Spectronics
SoJar Systems
Solar Systems
6-Pin
6-Pin
6-Pin
6-Pin
6-Pin
DIP, Coupler
DIP, Coupler
DIP, Coupler
DIP, Coupler
DIP, Coupler
Transistor
Transistor
Transistor
Transistor
Transistor
Output
Output
Output
Output
Output
TO-18, Lensed loR. LED
TO-18, Lensed loR. LED
4N27
4N27
4N35
4N35
4N35
MLED930
MLED930
A
A
A
A
A
B
STPT10
STPT15
STPT20
STPT2l
STPT25
Sensor Tech
Sensor Tech
Sensor Tech
Sensor Tech
Sensor Tech
Plastic Lensed Phototransistor
Plastic Lensed Phototransistor
PI LL, Lensed Phototransistor
PILL, Lensed Phototransistor
PILL, Lensed Phototransistor
MRD160
MRD160
MRD604
MRD601
MRD603
C
C
A
A
A
STPT45
STPT5l
STPT53
Plastic Lensed Phototransistor
TO-1S, Lensed Phototransistor
TO-1S, Lensed Phototransistor
PI LL, Lensed Phototransistor
TO-1S, Lensed Phototransistor
MRD450
MRD3050
MRD3056
STPT80
Sensor Tech
Sensor Tech
Sensor Tech
Sensor Tech
Sensor Tech
MRD3056
A
A
A
A
A
STPT80
STPT8l
STPT82
STPT83
STPT84
Sensor Tech
Sensor Tech
Sensor Tech
Sensor Tech
Sensor Tech
TO-1S,
TO-1S,
TO-1S,
TO-1S,
TO-1S,
MRD3056
MRD3052
MRD3053
MRD3054
MRD3056
A
A
A
A
A
STPT260
STPT300
STPT310
TIL23
TIL24
Sensor Tech
Sensor Tech
Sensor Tech
Texas Instr,
Texas Instr.
TO-18, Lensed Darlington Transsitor
TO-1S, Lensed Phototransistor
TO-5, Lensed Photodarlington
PI LL, Lensed Phototransistor
PI LL, lensed Phototransistor
MRD360
MRD300
MRD360
MLED910
MLED9l0
A
A
C
A
B
TIL26
TIL3l
TIL33
TIL34
TIL63
Texas
Texas
Texas
Texas
Texas
Instr,
Instr.
Instr.
Instr.
Instr.
Plastic,
TO-1S,
TO-1S,
TO-1S,
TO·1S,
Lensed
Lensed
Lensed
Lensed
Lensed
I.R, LED
Phototransistor
Phototransistor
Phototransistor
Phototransistor
MLED60
MLED930
MLED930
MLED930
MRD3050
E
B
B
A
A
TIL64
TIL65
TIL66
TIL67
TIL78
Texas
Texas
Texas
Texas
Texas
Instr.
Instr.
Instr.
Instr.
Instr.
TO-1S,
TO-18.
TO-1S,
TO-18,
Plastic,
Lensed
Lensed
Lensed
Lensed
Lensed
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
MRD3050
MRD3052
MRD3054
MRD3056
MRD450
A
A
A
A
C
STPT60 series
Lensed
Lensed
Lensed
Lensed
Lensed
Phototransistor
Phototransistor
Phototransistor
Phototransistor
Phototransistor
2-12
MRD601 series
B
CROSS·REFERENCE (continued)
Device
Description
Manufacturer
Motorola
Equivalent
Code
TIL81
TILlll
TILl12
TILl13
TILl14
Texas
Texas
Texas
Texas
Texas
Instr.
Instr.
I nstr.
Instr.
Instr.
TO-1S, Lensed Phototransistor
6-Pin
6·Pin
6-Pin
6-Pin
DIP,
DIP,
DIP,
DIP,
Coupler
Coupler
Coupler
Coupler
Transistor
Transistor
Transistor
Transistor
Output
Output
Output
Output
MRD300
TILlll
TIL112
TILl13
11Lll4
A
A
A
A
A
TILl15
TILllS
TIL117
TILl18
TIL119
Texas
Texas
Texas
Texas
Texas
Instr.
Instr.
Instr.
Instr.
Instr.
6-Pin
6-Pin
6-Pin
6-Pin
6-Pin
DIP.
DIP,
DIP,
DIP,
DIP,
Coupler
Coupler
Coupler
Coupler
Coupler
Transistor
Transistor
Transistor
Transistor
Transistor
Output
Output
Output
Output
Output
TIL115
TIL116
TIL1l7
MOC1006
11L119
A
A
A
C
A
Texas Instr.
Texas Instr.
Toshiba
PI LL, Lensed Phototransistor
PI LL, Lensed Phototrans;stor
PI LL. Lensed Phototransistor
PI L L. Lensed Phototransistor
S-Pin DIP, CO.upler Transistor Output
MRD601
MRD602
MRDS03
MRD604
4N27
A
A
A
A
TLP503
TLP504
1N5722
1 N5723
lN5724
Toshiba
Toshiba
Industry
Industry
Industry
S-Pin DIP, Coupler Transistor Output
6-Pin DIP, Coupler Transistor Output
PI LL, Lensed Phototransistor
PI LL, Lensed Phototransistor
PI LL, Lensed Phototransistor
4N25
4N25
MRD601
MRD602
MRD603
B
B
A
A
A
lN5725
2N5777
2N5778
2N5779
2N5780
Industry
Industry
Industry
Industry
Industry
PI LL, Lensed Phototransistor
TO-92, Plastic Photodarl ington
TO-92, Plastic Photodarlington
TO-92, Plastic Photodarl ington
TO-92, Plastic Photodarl ington
MRD604
2N5777
2N5778
2N5779
2N5780
A
A
A
A
D
4N25
4N26
4N27
4N28
4N29
Industry
Industry
Industry
Industry
Industry
6-Pin
G·Pin
S-Pin
6-Pin
6·Pin
DIP,
DIP,
DIP,
DIP,
DIP,
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Darlington Output
4N25
4N26
4N27
4N28
4N29
A
A
A
A
A
4N30
4N31
4N32
4N33
4N35
Industry
Industry
Industry
Industry
Industry
S-Pin
S-Pin
S-Pin
6·Pin
6·Pin
DIP,
DIP,
DIP,
DIP,
DIP,
Coupler
Coupler
Coupler
Coupler
Coupler
4N30
4N31
4N32
4N33
4N35
A
A
A
4N36
4N37
4N38
4N39
4N40
Industry
Industry
Industry
Industry
Industry
G-Pin DIP, Coupler Transistor Output
6-Pin DIP, Coupler Transistor Output
G·Pin DIP, Coupler Transistor Output
S·Pin DIP, Coupler SCR Output
S·Pin DIP, Coupler SCR Output
4N37
4N37
4N38
MOC3011
MOC3011
A
A
A
DE
DE
4N45
4N46
6N135
6N13S
6N138
Industry
Industry
Industry
Industry
Industry
S·Pin
S·Pin
S-Pin
B-Pin
S·Pin
4N32
4N32
MOC1006
MOC1005
4N32
DE
DE
DE
DE
DE
SN139
5082-4203
5082-4204
5082-4207
5082-4220
Industry
Hewlett-Packard
Hewlett·Packard
Hewlett-Packard
Hewlett-Packard
TD·18,
TO·1B,
TO·1B,
TO·1B,
4N32
MRD500
MRD500
MRD500
MRD500
DE
A
A
A
A
5082-4350
5082-4351
5082-4352
5082-4370
5081-4371
Hewlett
Hewlett
Hewlett
Hewlett
Hewlett
S-Pin
S-Pin
B-Pin
S-Pin
S·Pin
MOC1006
MOC1005
MOC1005
4N32
4N32
DE
DE
DE
DE
DE
TILSOl
TILS02
TILS03
TIL604
TLP501
Texas I nstr.
Texas Instr.
Packard
Packard
Packard
Packard
Packard
DIP,
DIP,
DIP,
DIP,
DIP,
Darlington Output
Darlington Output
Darlington Output
Darlington Output
Transistor Output
Coupler Darlington Output
Coupler Darlington Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Darlington Output
B·Pin DIP. Coupler Darlington Output
Lensed
Lensed
Lensed
Lensed
DIP,
DIP,
DIP,
DIP,
DIP,
Photo
Photo
Photo
Photo
PIN
PIN
PIN
PIN
Diode
Diode
Diode
Diode
Coupler Transistor Output
Coupler Transistor Output
Coupler Transistor Output
Coupler Darlington Output
Coupler Darlington Output
2-13
B
A
A
•
II
2-14
OPTOELECTRONICS
Data Sheets •
3-1
OPTOELECTRONICS DATA SHEETS
Page
•
2N5777 thru 2N57S0, MRD14B
4N25,A;4N26,4N27,4N~
,
4N29, A; 4N30, 4N31,
4N32, A; 4N33
4N35, 4N36, 4N37
4N3S, A
L 14H1 thru L 14H4
MLED60, MLED90
MLED92
MLED93 thru MLED95
MLED900
MLED930
MOCl19
MOC1005, MOC1006
MOC3002 thru MOC3007
MOC3009 thru MOC3011
MOC3020, MOC3021
MOC3030, MOC3031
MOC5003, MOC5004
MOC5010
MOCS020, MOCS021
MOCS030, MOCS050
MRD150
MRD160
MRD300, MRD310
MRD360, MRD370
MRD450
MRD500, MRD510
MRD3010, MRD3011
MRD3050, MRD3051, MRD3054,
MRD3055, MRD3056
Opto Couplers/Isolators
(Industry)
Plastic NPN Silicon Photo Darlington Amplifiers ..•......•..... 3-3
NPN Phototransistor and PN Infrared-Emitting Diode .......... 3-5
NPN Photodarlington and PN Infrared-Emitting Diode ..........
NPN Phototransistor and PN Infrared-Emitting Diode ..........
Optical Coupler with NPN Transistor Output ..................
Plastic NPN Silicon Photo Transistors ........................
Infrared-Emitting Diodes ...........................•........
Infrared-Emitting Diode ..................... , ........•......
Infrared-Emitting Diodes ....................................
Infrared-Emitting Diode ...•.............•..................•
Infrared-Emitting Diode .....................................
Opto Coupler with Darlington Output ....•.......•....•......
Opto Coupler with Transistor Output ...•..................•.•
Opto SCR Coupler .........................•................
Optically-Isolated Triac Driver, 250 V ..•...................••.
Optically-Isolated Triac Driver, 400 V ......................•..
Zero Voltage Crossing Optically-Isolated Triac Driver, 250 V ..•.
Digital Logic Coupler ................•............•.........
Optically-Isolated AC Linear Coupler ........•................
High CTR Darlington Coupler ................................
SO-Volt Darlington Coupler ..................................
Plastic NPN Silicon Photo Transistor .........................
Plastic NPN Silicon Photo Transistor .........................
NPN Silicon High Sensitivity Photo Transistor .................
NPN Silicon High Sensitivity Photo Darlington Transistor ......
Plastic NPN Photo Transistor ................................
PIN Silicon Photo Diode .....................................
250-V NPN Silicon Photo Triac Driver ........................
3-9
3-13
3-17
3-21
3-23
3-25
3-27
3-29
3-31
3-33
3-37
3-41
3-44
3-4S
3-50
3-53
3-55
3-57
3-59
3-63
3-66
3-69
3-73
3-77
3-S0
3-S3
NPN Silicon Photo Transistors ............•...........•...... 3-S6
Phototransistor and Photodarlington Opto Couplers ......•.•.. 3-90
3-2
®
2N5777 thru
2N5780
MRD14B
MOTOROLA
12.25.40 VOLT
PHOTO DARLINGTON
AMPLIFIERS
NPN SILICON
PLASTIC NPN SILICON PHOTO
DARLINGTON AMPLIFIERS
200 MILLIWATTS
. designed for applications in industrial inspection. processing and
control. counters, sorters, switching and logic circuits or any design requiring extremely high radiation sensitivity, and stable characteristics.
•
~:~~;OIA
•
Economical Plastic Package
•
Sensitive Throughout Visible and Near Infrared Spectral Range
for Wide Application
•
Range of Radiation Sensitivities and Voltages for Design Flexibility
•
TO-92 Clear Plastic Package for Standard Mounting
•
Annular Passivated Structure for Stability and Reliability
•
Precision Die Placement
O'054_~'
0.064
~::.
o~
0.067
Die Ptacemerlt Will Be
Within the Boundaries
of the Dotted Circle.
riB
SEATIJ~i-----r
=J~~t
~ r
'---'
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
VeEO
Collector-Base Voltage
VeBO
Emitter-Base Voltage
VEBO
2N5777' 2N5778'
MRD14B 2N5779 2N5780
PLANE{
Unit
25
40
Volts
18
25
40
Volts
8.0
8.0
12
Volts
12
-
Light Current
IL
_250
Total Device Dissipation@TA - 2SoC
PD
_200_2.67_
rnW
rnW/oe
-65 to +100
°e
Derate above 25°C
TJ,Tstgll
Operating and Storage Junction
rnA
_ __ _l
...jJ~
from exceeding 100°C.
FIGURE 1 -CONSTANT ENERGY SPECTRAL RESPONSE
100
/
TA~250C
0
0
V
0
0
0.4
/
""
/
\
\
./
I
3. BASE
0.6
\
0.7
0.8
0.9
1.0
J
K
L
N
P
R
S
\
1.1
1.2
A, WAVELENGTH (pm)
3-3
..
SECT. A·A
Ie
I
~-<>-o
'" L
t-t
N
!
j
NOTES,
1. CONTOUR OF PACKAGE BEYOND ZONE "P"
2. IS UNCONTROLLED.
DIM "F" APPLIES BETWEEN "W' AND
"L" DIM "0" & "S" APPLIES BETWEEN
"'L" & 12.70 mm (OS') FROM SEATING
PLANE. LEAO DIM IS UNCONTROLLEO
IN "W' & BEYOND 11.70 mm (OS')
FROM SEATING PLANE
DIM
A
8
C
0
F
G
H
1\
\
I
0.5
\
~..!l
STYLE 14,
PIN 1. EMITTER
r--t-R
2. COLLECTOR
N
111 Heat Sink should be applied to leads during soldering to prevent case temperature
K
, __l!Ji
J
o .:j~J-
Temperature Range
-Indicates JEDEC Registered Data.
0
A
MILLIMETERS
MIN
MAX
4.32
5.33
4.44
5.21
3.18
4.19
0.41
0.56
0.41
0.48
1.14
1.40
2.54
2.41
1.67
12.70
6.35
2.03
1.92
2.92
3.43
0.36
0.41
-
INCHES
MIN
MAX
0.170 0.210
0.175 0.105
0.125 0.165
0.016 0.022
0.D16 0.019
0.045 0.055
- 0.100
0.095 0.105
0.500
0.250
0.080 0.115
0.115
0.135
0.014 0.016
AU JEDEC dimensions and notes apply.
CASE 29-02
TO·92
2N5777 THRU 2N5780 • MRD14B
• STATIC ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted)
Characteristic
Collector Dark Current (Note 2)
Symbol
Min
Typ
Max
Unit
ICEO
-
-
0.1
~A
12
25
40
-
-
18
25
40
-
-
8.0
8.0
12
-
-
-
Min
Typ
Max
0.5
0.5
2.0
2.0
4.0
8.0
-
(VCE = 12 V)
Collector-Emitter Breakdown Voltage INote 2)
MR014B
2N5777. 2N5779
2N5778. 2N5780
Collector-Base Breakdown Voltage (Note 2)
•
Volts
V(BR)CEO
(lC= 10mAI
-
Volts
V(BRICBO
(lC = 100~AI
MRD14B
2N5777.2N5779
2N5778.2N5780
Emitter-Base Breakdown Voltage (Note 2)
-
Volts
V(BRIEBO
(IE = 100 ~AI
MRD14B
2N5777.2N5779
2N5778.2N5780
• OPTICAL CHARACTERISTICS ITA = 250 C unless otherwise notedl
Characteristic
Fig. No.
Symbol
-
IL
Collector Light Current (Notes 1.4,5)
(VCE = 5.0 VI
MRD14B
2N5777.2N5778
2N5779.2N5780
-
DC Current Gain (Note 2)
(VCE = 5.0 V. IC = 0.5 mAl
mA
.-
hFE
2N5777. 2N5778
2N5779.2N5780
Unit
2.5 k
5.0 k
-
-
_.
1
I.s
0.7
0.8
1.0
Turn-On Delay Time (Noles 3. 4)
2.3
tdl
-
-
100
~s
Rise Time (Notes 3. 41
2.3
tr
-
250
~s
Turn-Off Delay Time (Notes 3. 41
2.3
td2
-
Fall Time (Noles 3. 41
2.3
If
-
-
-
Ccb
-
-
10
Wave Length of Maximum Sensitivity
Collector-Base Capacitance
(VCB = 10 V. f = 1.0 MHz. IE =0)
2N5777 Ihru 2N5780
~m
5.0
itS
150
itS
pF
• Indicates JEDEC Registered Data.
NOTES:
1. Radiation Flux Density (HI equal to 2.0 mW/cm 2 emitted from
Ilm) with a pulse width equal to or greater than 500 micro
seconds (see Figures 2 and 3).
a tungsten source at a color temperature of 28700K.
2. Measured under dark conditions. (H~O).
4. Measurement mode with no electrical connection to the
base lead.
3. For unsaturated rise time measurements. radiation is provided by
a pulsed GaAs (gallium-arsenide) light-emitting diode (X'" 0.9
5. Die faces curved side of package.
FIGURE 2 - PULSE RESPONSE TEST CIRCUIT
FIGURE 3 - PULSE RESPONSE TEST WAVEFORM
Output Pulse
Output
90%
N.C.
o---'+-i
i.:: 10 iliA
PEAK
I
OUTPUT
3-4
Vohage---·""----,,,.
w
®
4N25,4N25A
4N26
4N27
4N28
MOTOROLA
NPN PHOTOTRANSISTOR AND
PN INFRARED EMITTING DIODE
... Gallium Arsenide LED optically coupled to a Silicon Photo Trans;stor designed
for applications requiring electrical isolation. high-current transfer ratios, small
package size and low cost; such as interfacing and coupling systems, phase and
feedback controls, solid-state relays and general-purpose switching circuits.
•
• Excellent frequency Response -
High Isolation Voltage Vise = 7500 V (Min)
•
@IF=10mAIC = 5.0 mA (Typ) - 4N25.A.4N26
2.0 mA (Typ) - 4N27,4N28
Economical, Compact, Dual-In-line
Package
*MAXIMUM RATINGS (TA
I
TRANSISTOR OUTPUT
•
300 kHz (Typl
• Fast Switching Times@ Ie = 10 rnA
tnn = 0.87 p.s (Typl - 4N25.A,4N26
2.1 p.s (Typl - 4N27.4N28
toff = 11 p.s (Typ) - 4N25.A.4N26
5.0 p.s (Typl - 4N27,4N28
.4N25A is UL Recognized
File Number E54915
High Collector Output Current
•
OPTO
COUPLER/ISOLATOR
= 250 C unless otherwise noted).
I
Rating
Symbol
I
Value
Unit
Volts
INFRARED·EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage
VR
3.0
Forward Current - Continuous
IF
80
mA
Forward Current - Peak
Pulse Width = 300 p.s, 2.0% Duty Cycle
IF
3.0
Amp
Total Power Dissipation @ T A = 250 C
Negligible Power in Transistor
Derate above 2So C
Po
150
mW
2.0
mWf>C
PHOTOTRANSISTOR MAXIMUM RATINGS
Collector-Emitter Voltage
VCEO
30
Volts
Emitter-Collector Voltage
VECO
7.0
Volts
Collector-Base Voltage
VCBO
Po
70
Volts
150
mW
2.0
mWf>C
Po
250
mW
3.3
mWf>C
TJ
-55 to +100
Tstg
-55 to +150
°c
°c
°c
Total Device Dissipation @ T A = 25u C
Negligible Power in Diode
Derate above 25°C
CJ
5
4
o
I
B
I
-----'.
'~
I
F f~ A--l
STYLE "
PIN 1.
2.
3.
4.
5.
6.
TOTAL DEVICE RATINGS
Total Device Dissipation @ T A = 25°C
Equal Povver Dissipation in Each Element
Derate above 2f1'C
Junction Temperature Range
Storage Temperature Range
260
Soldering Temperature (10 s)
*Indlcates JEDEC Registered Data.
NOTES,
1. OIMENSIONS A ANO BARE OATUMS.
2. ·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEAOS,
~10WIo:oo5i®IiJ~J
FIGURE 1 - MAXIMUM POWER DISSIPATION
- -\
160
Iz 140r-- I--~ 120
;f
~ 10D
c;
TA"'25lc- t - -
r-- r- t---!"'C
r--
75°C
D
2D
1\
\
1\
\
T A Ambient Temperature
R8JA Junction to Ambient Thermal
Resistance (500 oC/W)
PD1 Power Dissipation in One Chip
P02 Power Dissipation in Other Chip
\
\
,
\
80
100
120
40
6D
Po2, AVERAGE POWER DISSIPATION (mW)
Figure 1 is based upon using limit
values in the equation:
TJl -TA = ReJA (POI + Ke P02)
where:
TJ1 Junction Temperature (100o CI
1\
\
140
K8 Thermal Coupling Coefficient
120%1
Example:
160 With P01 '" 90 mW in the LEO
@ T A '" 50°C. the transistor
Po (P02)must be less than 50 mW.
3-5
4. OIMENSION L TO CENTER OF LEAOS
WHEN FORMED PARALLEL.
5. OIMENSIONING ANO TDLERANCING PER
ANSI YI4.5. 1973.
MILLIMETERS
DIM MIN
MAX
A B.13
B.89
B 6.10
6.60
C .2.92
5.0B
o 0.41 0.51
F 1.112
I.7B
G
2.54 BSC
J 0.20
0.30
K 2.54
3.81
L
7.62 BSC
M
N
P
00
150
0.38
2.54
J..27... .2-03
CASE 730A·Ol
ANOOE
CATHOOE
NC
EMITTER
COLLECTOR
BASE
4N25,4N25A,4N26,4N27,4N28
LED CHARACTERISTICS
(T A""
25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
"Reverse Leakage Current
IVR' 3.0 V, RL' 1.0 M ohms)
IR
-
0.005
100
~A
*Forward Voltage
VF
-
1.2
1.5
Volts
C
-
150
-
pF
-
3.5
50
100
nA
Characteristic
IIF'10mA)
Capacitance
IVR' 0 V, f · 1.0 MHz)
PHOTOTRANSISTOR CHARACTERISTICS (T A
"Collector-Emitter Dark Current
=
25°C and IF "" 0 unless otherwise noted)
4N25, A, 4N26, 4N27
4N28
IVCE '10 V, Base Open)
"Collector-Base Dark Current
IV CB • 10 V, Em itter Open)
"Collector-Base Breakdown Voltage
ICBO
-
-
20
nA
-
-
Volts
VIBR)CBO
70
"Collector-Emitter Breakdown Voltage
IIC' 1.0 mA, IB • 0)
VIBR)CEO
30
-
-
Volts
*Emitter-Collector Breakdown Voltage
VIBR)ECO
7.0
8.0
-
Volts
hFE
-
325
-
-
IC
2.0
1.0
5.0
2.0
-
mA
7500
2500
1500
500
1775
-
-
-
IIC'100~A, IE '0)
•
ICEO
liE '100~A,IB '0)
DC Current Gain
IVCE' 5.0 V, IC' 500 ~A)
COUPLED CHARACTERISTICS (T A'" 25°C unless otherwise noted)
"Collector Output Current (1)
4N25, A, 4N26
4N27,4N28
IVCE '10V, IF '10mA, IB'O)
Isolation Surge Voltage (2, 5)
(SO Hz Peak ae, 5 Seconds)
Volts
VISO
150 Hz Peak)
*4N25, A
*4N25,4N27
*4N28
*4N25A
-
1011
-
Ohms
0.2
0.5
Volts
-
1.3
-
pF
-
-
300
-
kHz
4N 25, A, 4N 26
2N27,4N28
td
-
0.07
0.10
-
4N25, A, 4N26
4N27,4N28
tr
0.8
2.0
4N25, A, 4N26
4N27,4N28
ts
-
4N25, A, 4N26
4N27,4N28
tf
-
160 Hz RMS for 1 Second) 13)
-
Isolation Resistance (2)
IV' 500V)
"'Collector-Emitter Saturation
VCElsat)
IIC' 2.0 mA, IF • 50 mAl
Isolation Capacitance (2)
IV' 0, f· 1.0 MHz)
Bandwidth 14)
Ilc' 2.0mA,RL • 100 ohms, Figure 1112)
SWITCHING CHARACTERISTICS
Delay Time
IIC' 10 mA, VCC • 10 V
Rise Time
Figures 6 and
8'
Storage Time
IIC'10mA,VCC'10V
Fall Time
Figures 7 and
8)
-
4.0
2.0
-
8.0
8.0
~s
~s
~s
~s
-
.. Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width =: 300 /-ls, Duty Cycle:O;;;; 2.0%.
(2) For this test LED pins 1 and 2 are common and phototransistor pins 4,5, and 6 are common.
(3) RMS Volts, 60 Hz. For this test, pins 1, 2, and 3 are common and pins 4,5, and 6 are common.
(4) IF adjusted to yield IC =: 2.0 mA and ic == 2.0 mA p-p at 10 kHz.
(5) Isolation Surge Voltage, VISQ, is an internal device dielectric breakdown rating.
DC CURRENT TRANSFER CHARACTERISTICS
FIGURE 2 - 4N25.AAN26
F IGU R E 3 - 4N27AN28
50
20
'...."
.5 10
z
w
5.0
"u
2.0
....u
1.0
~
~
~;E~10V
r-:'h
a
a
a
I/:
~TJ"'-550C
/'
~
0
a
.....
---
r-
--
a
a
lOOoC
0.5
VCE - 10V
-
f-
TJ" -55°C
./
25°C
lOOlle
5
0
u
2
25°C
:} 0.2
o. 1
0.1
0.05 0. 5
1.0
2.0
5.0
10
20
50
100
200
0.05 0.5
500
IF, FORWARD DIODE CURRENT (rnA)
3-6
./"
1.0
2.0
5.0
10
20
50
100
IF, FORWARD DIODE CURRENT (rnA)
200
500
4N25,4N25A,4N26,4N27,4N28
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 5 - COLLECTOR SATURATION VOLTAGE
FIGURE 4 - FORWARD CHARACTERISTICS
--
1.0
22f--f--f-~+t-ttl+---+-~~-HH+H--+-+-+++~
o
«
'"
~ _ 2.0 -
-++t-H+H---j-H-H-ttlt--t-H-+1f1tH
0",
~>-
~ §hs f---f--H+t+t-t+- -+-+
~ ~
I----+-+-VI-H+tt
----~~-+-f+~++~--+-++~tHt_-t_1~~++fH
~ ~16~~
z
~
~ §;
;;;
li-
++f+f+tt
--
14c--~
t;~
wo
.~
j>
0.4
-""
j!",
--
-0
0.05
0.1
10
'r
5~ 0
2~0
]:
1.0
o~ 5
o~ 2
o. 1
0.05
r-
ru
!- ~
it=~
I
_'
d~?-"'"
td
.. -
K
-
ttf
1.0
Til
.~-rt
Fl'= L
....c
~
-~-
~
~
- - r-~--
0.2
5.0
0.5
1.0
2.0
'C, COLLECTOR CURRENT (mA)
3.0
10
4N27
4N28
20
50
100
50!"
~
5.0 7.0
+----
]:
,.
10
>=
5.0
w
c-
2~0
~--
1.0
-~
-~:.
=F=F4N27,4N28
2.0
~
20
:::ff# -- f-- -- :t ;~;
rl t
4N25,AAN26
t I
0.02
0.5 0.7
Fe-
I
-~
"t-:-
lft:
~I
rF:::
-
200
20IC:_~
25'C
__
IF
TJ
-
,~~
FIGURE 7 - TURN-OFF TIME
~CC 110 /_
I
1
II
•
/ /
,
-- rI Dk
I
4N25,A
4N26
0.2
II
I
-_. --
w=>
10
lOa
'F. INSTANTANEOUS FORWARD CURRENT (mAl
11
+
-~--
0.6
FIGURE 6 - TURN·ON TIME
0
~12~1,~1
r.'F ~ 50 IC __
TJ ~ 25'C
--
w
>" f~-
1.2~--~~
1 a ~-~ 1-"~~~~pH-rn+1
-
0.8
~
0
.-:..i=
T
1---
10
~
"' '"""
02:
,,0
rZ~-=_
~-f---+++tHV
1,,1
'">-w ~
>- 0
10
20
F""'=
0.5
--+--30
0.2
0.5 o~ 7
50
I--=~F 4N25.A.4N26--~=F
1.0
IC. COLLECTOR CURRENT (mA)
2.0
4N27. 4N28
3.0
5~0
7.0
20
10
30
50
IC. COLLECTOR CURRENT (mA)
FIGURE 8 - SATURATED SWITCHING TIME
TEST CIRCUIT
FIGURE 9 - DARK CURRENT versus
AMBIENT TEMPERATURE
10.00 0
+10V
0
RD and RL VARIED TO OBTAIN DESIRED
CURRENT LEVELS
RL
VCE ~ 10 V
IF - 0
IS - 0
0
SCOPE
./
0
---I
PHOTO
TRANSISTOR
I
I
I
0
1
___ -1I
0.0 I
-75
-50
-25
+15
+50
TA. AMSIENT TEMPERATURE (DC)
3-7
+75
+100
4N25,4N25A,4N26,4N27,4N28
FIGURE 11 - FREQUENCY RESPONSE TEST CIRCUIT
FIGURE 10 - FREQUENCY RESPONSE
~ 3.0
~ 2. OJ-- TA = 2soe
Ie
il!o
z
;:1.0
•
i:l
~
::>
-
Rl -1001le-
o. 7
.......
'"' O.S
~
~
Vee = 10 VOLTS
.......
r-...
i'....
O.3
S~ .....
......
'1-...
~001l-
"'~ o.2
j
1"'1-.
8
~ 0.130
70
SO
200
100
300
SOD
f, FREOUENCY 1kHz)
-
IF
"
700
IC IDC) = 2.0 mA
' -....- - 0 OUTPUT
Rl
ic lAC SINE WAVE = 2.0 mA P.PI
1000
TYPICAL APPLICATIONS
FIGURE 13 - COMPUTER/PERIPHERAL INTERCONNECT
FIGURE 12 - ISOLATED MTTL
TO MOS IP-CHANNEL) LEVEL TRANSLATOR
COMPUTER
lk
~
+5.0 V
FR~~G~JTl
IS.O mA PULSE)
rL
-,S
....... x
J
I
IJ
_ _ _ _ ..J4
4N2S,A
4N26
4N27
4N28
-15 V
FIGURE 14 - POWER AMPLIFIER
FIGURE 15 - INTERFACE BETWEEN LOGIC AND LOAD
+S V
AC
1
3-8
®
4N29,4N29A
4N30
4N31
4N32,4N32A
4N33
MOTOROLA
NPN PHOTO DARLINGTON AND PN INFRARED
EMITTING DIODE
· .. Gallium Arsenide LED optically coupled to a Silicon Photo
Darlington Transistor designed for applications requiring electrical
isolation, high·current transfer ratios, small package size and low
cost; such as interfacing and coupling systems, phase and feedback
controls, solid·state relays and general-purpose switching circuits.
OPTO
COUPLER/ISOLATOR
DARLINGTON OUTPUT
•
High Isolation Voltage
Visa = 7500 V IMin)
•
Excellent Frequency Response -
•
High Collector Output Current
•
Fast Switching Tima. @ IC = 50 mA
ton = 2.01" (Typ)
30 kHz (Typ)
@IF= 10mAIC = 50 mA (Min) - 4N32,33
10 mA (Min) - 4N29,30
5.0 mA (Min) - 4N31
•
toff = 251" (Typ) - 4N29,30,31
601" (Typ) - 4N32,33
•
Economical, Compact,
Dual·ln·Line Package
·MAXIMUM RATINGS
4N29A, 4N32A are UL Recognized File Number E54915
IT A " 25°C unless otherwISe noted)
I
R.ting
Symbol
I
Value
Unit
INFRARED·EMITTING DIODE MAXIMUM RATINGS
VA
3.0
Forward Current - Continuous
IF
80
mA
Forward Current - Peak
IF
3.0
Amp
Reverse Voltage
(Pulse Width = 3001",2.0% Duty Cycle)
Total Power Dissipation @TA - 25°C
Po
Volts
150
mW
2.0
mW/oC
Negligible Power in Transistor
Derate above 2SoC
PHOTOTRANSISTOR MAXIMUM RATINGS
o
t
B
I
---.l.
'~
I
l- --IFf-
STYLE I:
PIN 1. ANODE
2. CATHOOE
3. NC
4. EMITTER
S. COLLECTOR
6. BASE
A
Collector-Emitter Voltage
VCEa
30
Volts
Emitter-Collector Voltage
VECO
5.0
Volts
Collector-Base Voltage
VCBO
50
Volts
Po
150
mW
2.0
mW/oC
Total Power Dissipation @TA
Negligible Power in Diode
Derate above 2SoC
CJ
54
= 2SoC
TOTAL DEVICE RATINGS
Total Device Dissipation @ T A = 2SoC
Equal Power Dissipation in Each Element
Derate above 25°C
Po
250
mW
3.3
mW/oC
Operating Junction Temperature Range
TJ
-55 to +100
°c
Storage Temperature Range
T stg
-55 to +150
°c
~~(ij:iW5i®[T]-,\@Ii®J
Soldering Temperature (10 s)
Indicates JEOEC Registered Data .
-
°c
4. OIMENSION L TO CENTER OF LEAOS
.
FIGURE 1 - MAXIMUM POWER DISSIPATION
--
""
''''
"•
•
•
.•
- - t-"-lcA. 25
-
\
t-"- r---.!ooc
\
60
\
\
1---!50 C
•
20
260
1\
'"
1
60
80
-
\
\
\
Ion
120
P02. AVERAGE POWER DISSIPATION ImWl
".
\
16{)
Figure 1 is based upon using limit
values in the equation:
-T J1 - T A'" RaJA (P01 + Ka P02)
where:
TJ1
Junction Temperature (lOOoe)
TA
Ambient Temperature
RaJA Junction to Ambient Thermal
Resistance (50ooC/WI
P01 Power Dissipation in One Chip
PD2 Power Dissipation in Other Chip
K8
Thermal Coupling Coefficient
(20%1
Example'
With PD1 '" 90 mW in the LED
@TA = 5o<'C, the Darlington
Po (P021 must be less than 50 mW.
3-9
NOTES:
1. OIMENSIONS A ANO BARE OATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEAOS:
WHEN FORMEO PARALLEL.
S. DIMENSIONING AND TOLERANCING PER
ANSI Y14.S. 1973.
CASE 130A·Ol
•
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
LED CHARACTERISTICS ITA = 25°C unle.. otherwise noted)
Characteristic
Unit
Symbol
Min
Typ
Max
IR
-
0.005
100
"A
VF
-
1.2
1.5
Volts
C
-
150
-
pF
*Reverse Leakage Current
(VR = 3.0 V, RL = 1.0 M ohms)
*Forward Voltage
(IF
=
lOrnA)
Capac itance
(VR = 0 V, f = 1.0 MHz)
PHOTOTRANSISTOR CHARACTERISTICS IT A = 25°C and IF = 0 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ICEO
-
8.0
100
nA
V(BR)CBO
50
110
-
Volts
V(BR)CEC
30
75
-
Volt.
~(BR)ECO
5.0
8.0
-
Volt.
·Collector-Emitter Dark Current
(VCE = 10 V, Base Open)
•
*Collector-Base Breakdown Voltage
OC= 100 "A, IE =0)
·Collector-Emitter Breakdown Voltage
(lC = 100 "A,)B = 0)
*Emitter-Collector Breakdown Voltage
(IE = 100 "A, IB =0)
DC Current Gain
15K
hFE
(VCE = 5.0 V, IC = 500 "A)
COUPLED CHARACTERISTICS IT A = 25°C unless otherwise noted)
Characteristic
·Collector Output Current (1)
Symbol
Min
Typ
Max
Unit
IC
50
10
5.0
80
40
-
rnA
-
-
7500
2500
1500
-
-
4N32,4N33
4N29,4N30
4N31
(VCE = 10V, IF = rnA, IB =0)
Isolation Surge Voltage (2, 5)
160 Hz ae Peak, 5 Seconds)
Volts
VISO
*4N29,4N32
*4N30,4N31,4N33
-
-
VCE(sat)
-
Isolation Resistance (2)
IV = 500 V)
*Collector-Emitter Saturation Voltage (1)
(lC = 2.0 rnA, IF = 8.0 rnA)
4N31
4N29, 4N39, 4N32, 4N33
1011
-
0.8
0.8
1.2
1.0
-
Isolation Capacitance (2)
Ohms
Volts
0.8
pF
30
kHz
(V=0,f=I.0MHz)
-
Bandwidth (3)
(lc = 2.0 rnA, RL = 100 ohms, Figures 6 and 8)
SWITCHING CHARACTERISTICS IFigures 7 and 9), (4)
Turn-On Time
(lC = 50 rnA, IF = 200 rnA, VCC = 10 V)
ton
Turn..()ff Time
(lC = 50 rnA, IF '= 200 rnA, VCC = 10 V)
-
2.0
5.0
-
25
60
40
100
"s
toff
4N29, 30, 31
4N32,33
"s
-
"'Indicates JEDEC Registered Data.
(1)
(2)
(3)
(4)
(5)
Pulse Test: Pulse Width'" 300,",s, Duty Cycle <: 2.0%.
For this test, LED pins 1 and 2 are common and photo transistor pins 4, 5, and 6 are common.
IF adjusted to yield Ie"" 2.0 rnA and ic = 2.0 mA p.p at 10 kHz.
td and tr are inversely proportional to the amplitude of IF; ts and tf are not significantly affected by IF.
Isolation Surge Voltage, V ISO, is an internal device dielectric breakdown rating.
DC CURRENT TRANSFER
CHARACTERISTICS
FIGURE 2 - 4N29, 4N30, 4N31
100
50
1
FIGURE 3 - 4N32, 4N33
100
VCE' 10 V
50
TJ=15·C
20
25°C
a
5.0
'"
~
2.0
-15·C- C-
/
...... -55·C
/
O.2
1.0
/
o.
/
/
2.0
3.0
»
l&OC
./
/
8 1.0
.:'i o.5
5
0. 1
0.5 0.1
Tp l&OC.....:
25·C
m 10
/
O
VCE"10V
1
.... 20
./
~V 1/
L"-
-5&OC
O.
5.0 1.0
10
20
30
60
0.2
IF. FORWARD DIODE CURRENT·(mA)
0.3
0.5 0.1 1.0
2.0
3.0
5.0 1.0
IF, FORWARD DIODE CURRENT (mA)
3-10
10
20
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
TYPICAL ELECTRICAL CHARACTERISTICS
(Printed Circuit Board Mounting)
FIGURE 5 - COLLECTOR-EMITTER CUTOFF CURRENT
FIGURE 4 - FORWARD CHARACTERISTIC
103
r-VCP 10V
IpO
IB-O
I-
•
F
if
1
1
./
1.2
1.0
1.0
-
2
~
10-3
10
100
iF. INSTANTANEOUS FORWARD CURRENT (mAl
-60
1.Ok
-20
-40
100
O. 3
O. 2
Is
~
o. 1
...>
:g
20
It
~
10
~
RL = 1.0k'
.....
b...
0.0 7
~ 0.05
_ VCC= 10V
Ic=2.0mA
2 - - TA=2S oC
1.0
0.2
O. 1
0.3
I
2.0
3.0
5.0 7.0 10
20
I. FREGUENCY 1kHz)
30
50
70
100
-
IT
VCC=10V::::
IF - 41C
TJ-2S 0 C'
Nore4 ~
>
Id
I,
4N29/33 -
0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
IC.COLLECTOR CURRENT ImA)
FIGURE 8 - FREQUENCY RESPONSE TEST CIRCUIT
CONSTANT
CURRENT
INPUT
+80
4N29/31
2.0
1.0
0.5
~ 0.00.03 0.0 1
+60
Is
5 5.0
5
cr::
4N32.33±:
200
100
50
w
~
+40
1000
500
O. 7
O. 5
o
+20
FIGURE 7 - SWITCHING TIMES
FIGURE 6 - FREQUENCY RESPONSE
1. 0
'"
0
TA. AMBIENT TEMPERATURE IOC)
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
N.C.
.....-J..:...~ OUTPUT
IF
PULSE}
WIDTH
IC 10C) = 2.0 mA
ie lAC SINE WAVE) = 2.0 mA P.P.
3-11
<
1.0ms
~OO 300
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
TYPICAL APPLICATIONS
FIGURE 10 - VOLTAGE CONTROLLED TRIAC
2.0 k
N.C.
51
•
1
1.0k
r-
115 Vat
Vin.EJ].5V
:I ~
2N5060
2
FIGURE 11 - AC SOLID STATE RELAY
510n
+
r--"1.6V
01
MPSA91
U1
MPSA42
01
lN4003
02
lN4003
OV -.-/
MT2
60 Hz AC POWER
2N6165
GATE
CONTRO LSIGNAL
MTI
R3
100 k
-l
I
I
L _
I
SI
MUS
49B7
2HEI~F~~
R4
100 k
I
I
_...J
FIGURE 12 - OPTICALLY COUPLED ONE SHOT
+10
4.7 k
51
lr-- ---
10 k
R
PULSE WIDTH
,·0.5RC
47 k
Vin.Cl1~
L-41
lOOk
'--
FIGURE 13- ZERO VOLTAGE SWITCH
10k
51
1
r------,
I
1.3 V:
@
I
1.0 mA I
1N6341
15
Ji-tl~4'i.7~kt-"""'---j~-L"'--rJ
:
1
60 Hz
I
AC POWER
>-___1~1~
I
'- _ _ _ _ _ _ -J
4'--__-+__~~~~~~~~-J
5.0k}
RS
for
4W
110 VAC
10 k}
for
BW
130VAC
3-12
1
®
4N35
4N36
4N37
MOTOROLA
OPTO
COUPLER/ISOLATOR
NPN PHOTOTRANSISTOR AND
PN INFRARED EMITTING DIODE
TRANSISTOR OUTPUT
· .. gallium-arsenide LED optically coupled to a silicon phototransistor designed for applications requiring electrical isolation,
high-current transfer ratios, small package size and low cost such as
interfacing and coupling sy&tems, phase and feedback controls,
solid-state relays and general-purpose switching circuits.
•
High Electrical Isolation Visa = 7500 V (Min)
•
High Transfer Ratio 100% (min) @ IF = 10 rnA, VCE = 10 V
•
Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (max) @ IF = 10 rnA, IC
•
UL Recognized File Number E54915
•
= (l.5 rnA
Value
Unit
0
VRB
6.0
Volts
I
I~ .~
Forward Current - Continuous
IF
60
mA
Forward Current - Peak
Pulse Width = 1.0 ~s, 2.0% Duty Cycle
IF
3.0
Amp
54
MAXIMUM RATINGS ITA = 25°C unless otherwise noted)
I
I Symbol
Rating
"INFRARED-EMITTER DIODE MAXIMUM RATINGS
Reverse Voltage
Total Power Dissipation
@
T A = 2SoC
Derate above 2SoC
Total Power Dissipation @TC = 2SoC
Derate above 2SoC
Po
B
--.-i
STYLE "
PIN 1. ANODE
~. ~~THOOE
4. EMITTER
5. COllECTOR
6. BASE
--IF
A
mW
Po
Negligible Power in Transistor
!
o
100
1.3
mW/oC
100
1.3
mW
mW/oC
"PHOTOTRANSISTOR MAXIMUM RATINGS
Collector·Emitter Voltage
Emitter-Base Voltage
VCEO
30
VEBO
7.0
Volts
Volts
Collector-Base Voltage
VCBO
70
Volts
IC
100
Output Current - Continuous
Total Power Dissipation @ T A - 2SoC
Negligible Power in Diode
300
4.0
mW/oC
Po
500
6.7
mW
mW/oC
Po
300
3.3
mW
mW/oC
7500
Volts
Derate above 2SoC
Total Power Dissipation @TC
Derate above 2SoC
=
2SoC
mA
mW
Po
TOTAL DEVICE RATINGS
*Total Power Dissipation @ T A - 25°C
Derate above 2SoC
Input to Output Isolation Voltage, Surge
60 Hz Peak ac, 5 seconds
JEDEC Registered
4N35 = 3500 V
Data@8ms
4N36 = 2500 V
Visa
Vpk
4N37 = 1500 V
* Junction Temperature Range
TJ
-55 to +100
°c
*Storage Temperature Range
*Soldering Temperature (10 sl
Tstg
-55 to +150
°c
-
260
°c
* Indicates JEDEC Registered Data
3-13
NOTES,
1. DIMENSIONS A AND B ARE DATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS,
[~1@o;13@(Jo51®.1 T
IA®IB®I
4. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEl.
5. DIMENSIONING AND TOLERANCING PER
ANSI YI4.5. 1973.
~
A
Ii
".!!.~IMEI~~ _!N_C~
--m
.~~~- .!iII'!.~M-
6.10
6.60
5.08
C 2.92
0 0.41
0.51
F 1.02
1.78
2.54 BSC
G
J
0.20
0.30
K 2.54
3.81
L
7.62 BSC
150
M 00
N. 0.38
2.54
LJ'.....J.27 L 2c03
~.~~~ ~~~}
0.115 0.200
0.Q16 0.020
0.040 0.Q70
0.100 BSC
0.008 0.012
0.100 0.150
0.300 BSC
00
it&
0.015
0.100
0.050~
CASE 730A·Ol
4N35, 4N36, 4N37
ELECTRICAL CHARACTERISTICS
I
Characteristic
Symbol
Min
Typ
Max
Unit
IR
-
0.005
10
I'A
0.8
0.9
0.7
1.2
1.5
1.7
1.4
-
150
-
3.5
ICBO
-
-
VIBRICBO
70
VIBR)CEO
VIBR)EBO
LED CHARACTERISTICS ITA" 25 0 C unless otherwise noted)
*Reverse Leakage Current
IVR = 6.0 V)
* Forward Voltage
Volts
VF
IIF=10mA)
IIF=10mA,TA"-550 C)
IIF" 10 rnA, TA = 100o C)
-
-
pF
50
500
nA
p.A
20
nA
-
-
Volts
30
-
-
Volts
7.0
8.0
-
Volts
1.0
0.4
0.4
1.2
-
-
-
-
-
100
100
100
RIO
1011
-
-
Ohms
VCElsat)
-
0.14
0.3
Volts
-
-
1.3
2.5
pF
Turn-On Time
IVCC" 10 V, IC" 2.0 rnA, RL = 100 fl)
ton
-
4.0
10
p.s
Turn-Qff Time
IVCC = 10 V, IC" 2.0 rnA, RL = 100 fl)
tolf
-
4.0
10
I'S
Capacitance
C
IVR" 0 V, I" 1.0 MHz)
'PHOTOTRANSISTOR CHARACTERISTICS IT A"
an
un ess at h erwise noted)
F=
Collector-Emitter Dark Current
•
ICED
IVCE = 10 V, Base Open)
IVCE " 30 V, Base Open, T A" 100o C)
.-
Collector-Base Dark Current
IVCB = 10 V, Emitter Open)
Collector-Base Breakdown Voltage
IIC=100 I'A,IE"0)
Collector-Emitter Breakdown Voltage
IIC=1.0mA,IB=0)
Emitter-Base Breakdown Voltage
liE = 100p.A, IB =0)
'COUPLED CHARACTERISTICS IT A" 25°C unless otherwISe noted)
'Current Transfer Ratio
Input to Output Isolation Current (2) (31
IVio = 3550 Vpk)
IVio = 2500 V pk)
IVio " 1500 Vok)
-
IC/IF
IVCE = 10 V, IF" 10 rnA)
IVCE = 10V, IF = lOrnA, TA" -550 C)
IVCE = 10V, IF = lOrnA, TA "100o C)
I'A
110
4N35
4N36
4N37
Isolation Resistance (2)
IV" 500 V)
Collector-Emitter Saturation Voltage
IIc = 0.5 rnA, IF = 10 rnA)
Isolation Capacitance (2)
IV " 0, I " 1.0 MHz)
'SWITCHING CHARACTERISTICS IFlgure 1)
* Indicates JEDEC Registered Data.
NOTES: 1. Pulse Test: Pulse Width" 300 p.s, Duty Cycle .. 2.0%.
2, For this test LED pins 1 and 2 are common and phototransistor pins 4, 5, and 6 are common.
3. Pulse Width .. B.O ms.
3·14
4N35. 4N36, 4N37
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
q
,nput
-=
Vee
~
47
Output
.dt- __
II
-=
Input Pulse
-~-90~
~~output
RL
Test Circuit
L
FIGURE 2 - FORWARD CHARACTERISTICS
ton~
I
I
r-toft
r-- --!
2.21--t-t+t-ttttt-----t--t-f+tittt---t-t--H-ttHJ
~
i
~~
2.0 J--+-++-l-+1+Hf---t--+-H+tttt-J-J-t--r+tI'tH
"'5
g 2- 1.8 J---t--t-+-l-+1itt- --i-f--t+H1+f---t-i--l>"Hl-tttt
t----- -.-
~ ~
~ ~ 1.6t---~ g
1-~
1.4 J--t-++-t-+1+H---t--t-H++tt>""- -1J-t--r+++tH
Voltage Wave Forms
Vary I nput Pulse
Amplitude for Various
1. 2 r--t-t-t-t-HH-ttr:-':';."'_-t""'t-t-t-rt-t-tt-·_--t- -t----t-t-tttt1
Collector Currents
1.0 ~---''--.'--'----'-'-J.Uc'--_'----'-'---'--'--LL~_~~~'---'-:~
1.0
10
100
1.0k
iF. INSTANTANEOUS FORWARD CURRENT (mAl
s
FIGURE 4 - COLLECTOR BASE CURRENT
.ersusiNPUT CURRENT
FIGURE 3 - COLLECTOR SATURATION REGION
300
O.5
o
2-
<
3
....
~ 0.4
i13
!
~ I--TA =250 C
o
: o. 31--~=20
Vce- IOV
Tr250 C
0
o
~ O. 2
~
o
......
8~ o.
~
i"""
./
8
1
...ul
§
w
~
:E
>
100
~l.0
O•5
0
0.2
2.0
1.0
0.5
5.0
10
20
1.0
0.5
20
10
5.0
2.0
IC. COLLECTOR CURRENT (mAl
50
'F. INPUT CU8RENT (mAl
FIGl!RE 5 - COLLECTOR LEAKAGE CURRENT
.ersus TEMPERATURE
FIGURE 6 - COLLECTOR CHARACTERISTICS
5. 0
<
.§
....
~
2_01-
IF-20m~
t----
1. 0
10mAt
13 o. 5
....
~ O.2
....
=>
0
~:::;
5.0mA
O. 1
0.0 5
1.0 rnA
«
~ 0.0 2
o
~
1.0
10
20
30
40
50
60
70
80
90
0.0 I
0.00 5
100 110
TA. AMBIENT TEMPERATURE (OCI
0.02
0.05
0.1
0.2
0.5
1.0
2.0
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTSI
3-15
5.0
10
•
4N35, 4N36, 4N37
TYPICAL APPLICATIONS
FIGURE 8 - COMPUTER/PERIPHERAL INTERCONNECT
FIGURE 7 - ISOLATED MTTL TO MOS
(P-CHANNELI LEVEL TRANSLATOR
+5.0 V
FROM MTTL
I
LOGIC
15.0 rnA PULSEI
I
I
L
•
-15 V
FIGURE 9 - POWER AMPLIFIER
FIGURE 10 - INTERFACE BETWEEN LOGIC ANO LOAO
]:,-I
Vout
L
3-16
_
AC
1
®
4N38
4N38A
MOTOROLA
OPTICAL COUPLER WITH NPN
TRANSISTOR OUTPUT
OPTO
COUPLER/ISOLATOR
· .. gallium-arsenide LED optically coupled to a silicon phototransistor. Designed for applications requiring electrical isolation,
high breakdown voltage and low leakage such as teletypewriter
interfacing, telephone line pulsing and driving high-voltage relays.
•
High Isolation Voltage VISO = 7500 V (Min)
•
High Collector Emitter Breakdown Voltage V(BR)CEO = 80 V (Min)
•
Economical Dual-in-Line Package
•
4N3BA UL Recognized, File Number E54915
•
TRANSISTOR OUTPUT
•
*MAXIMUM RATINGS (TA= 2S'C unIe. othe rWls
. e noted)
I
I
"ating
I
Symbol
I
Value
Unit
•
I
INfRARED-EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage
VA
3.0
Forward Current - Continuous
'F
SO
mA
Forward Current - Peak
'F
3.0
Amp
Po
150
mW
2.0
mW/oC
VoUs
Pulse Width'"
300~.
2.0% Duty Cvcle
Total Device Dissipation @ T A _25°C
Negligible Power in Transistor
Derate above 2SoC
Volls
PHOTOTRANSISTOR MAXIMUM RATINGS
ColleClor-Emitter Voltage
VCEO
80
Emitter-Collector Voltage
\!ECO
7.0
Volts
Collector-Base Voltage
VCSO
80
Volts
Po
150
mW
2.0
mW/oC
Total Device Dissipation
@
T A'" 2SoC
Negligible Power in Diode
Derate above 2SoC
TOTAL OEVICE RATINGS
Total Device Dissipation @TA"'2SoC
Po
250
mW
3.3
mW/oC
Junction Temperature Range
TJ
-55 to +100
Storage Temperature Range
T stg
-55 to + 150
°c
°c
Equal Power Dissipation in Each Element
Derate above 25°C
Soldering Temperature 11051
-Indicates
JeOEC Registered
·C
260
~
1,,1--
z
0
i
iii
100
~
8D
~
,,-
"
~
~
60
- - r--
--
'20
10
0
0
20
t
\
\
\
\
8D
ROJA Junction to Ambient Thermal
Resistance t5000C/WI
POI Power Dissipation in One Chip
\
\
\
\
60
Figure 1 is based upon using limit
values in the equation:
TJl -TA ~ A8JA (POl + K8 P02)
where:
TJl Junction Temperature l1000 CI
TA Ambient Temperature
-
TA' 2S C -
~
t--!0oc
_ _ 1S0C
1\
.. \
o
---.J
~~
C
9JW3U
~
_
_
N
K
-1G~j.:::o
f
t
Fl
L=:]
NOTES,
1. OIMENSIONS A ANO BARE OATUMS.
2. ·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS,
~jgl 0.13
«i:OOsi®T[CA@ii®l
Data.
FIGURE 1 - MAXIMUM POWER DISSIPATION
160
C)l
STYLE L
PIN 1. ANOOE
2. CATHOOE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
100
120
Po2. AVERAGE POWER DISSIPATION (mWl
140 \
'611
P02 Power Dissipation in Other Chip
KO Thermal Coupling Coefficient
120%)
Example:
With POl 90 mW in the LEO
@ T A '" 50°C. the transistor
Po tP02)must be less than 50 mW.
;0:
3-17
4. OIMENSION L TO CENTER OF LEADS
WHEN FORMEO PARALLEl.
5. OIMENSIONING ANO TOLERANCING PER
ANSI Y14.5, 1973.
INCHES
MAX
0.350
8.13
S.89
0.260
B 6.10 B.60
0.200
5.08
C 2.92
.41
0.020
0.51
0
0.070
F 1.02
1.7B
SSC
2.54 BSC
G
0.012
0.20
J
Oc~~
0.150
3.81
K 2.54
7.62 SSC
BSC
L
M D·
15'
D·
15'
N 0.3B
2.54 D.lnS 0.100
P , 1.27
2.03
0.050 O.OBO
DIM
A
~M~~S
CASE 730A·Ol
J
4N38,4N38A
LED CHARACTERISTICS (TA ' 250 C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
IR
-
0.005
100
~A
*Forward Voltage
(I F '10mA)
VF
-
1.2
1.5
Volts
Capacitance
C
-
150
-
pF
Symbol
Min
Typ
Max
Unit
ICEO
-
3.5
50
nA
ICBO
-
-
-
nA
V(BR)CBO
80
120
-
Volts
·Collector-Emitter Breakdown Voltage
IIC' 1.0mA,IB' 0)
V(BR)CEO
80
90
-
Volts
*Emitter-Collector Breakdown Voltage
(IE' 100~A, IS' 0)
V(SR)ECO
7.0
8.0
-
Volts
·Reverse Leakage Current
(VR', 3.0 V)
(VR' 0 V, f, 1.0 MHz)
PHOTOTRANSISTOR CHARACTERISTICS
n A'
250 C and IF ' 0 unless otherwIse noted.)
Characteristic
·Collector~Emitter
Dark Current
(VCE' 60 V, Base Open)
•
·Collector-Base Dark Current
(VCB' 60 V, Emitter Open)
·Collect.or-Base Breakdown Voltage
IIC' 100~A, IE ' 0)
DC Current Gain
250
hFE
(VCE' 5.0 V, IC' 500~A)
COUPLED CHARACTERISTICS (TA ' 250 C unless otherWIse noted.)
Characteristic
Max
Typ
Unit
Volts
VISO
7500
1500
2500
1775
-
-
-
-
1011
-
Ohms
VCE(satl
-
-
1.0
Volts
-
-
1.3
-
pF
4N38, A
*4N38
*4N38A
*4N38A
* (60 Hz RMS for 1 second)
Isolation Resistance (21
(V, 500 V)
.. Collector-Emi tter Saturation
lie '
Min
Symbol
Isolation Surge Voltage (2, 3)
(60 Hz Peak ac, 5 Seconds) (3)
*(60 Hz Peak ael
-
4.0 rnA, IF' 20 rnA)
Isolation Capacitance (2)
(V, 0, f, 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
lie' ,10 rnA, vee'
Rise Time
Figures 6 and 8
Storage Time
lie'
Fall Time
Figures 7 and 8
lOrnA,
vec'
0.07
'd
10 VI
10V)
tr
0.8
'"
ts
4.0
~s
tf
7.0
~s
~s
-Indicates JEDEC Registered Data. (1) Pulse Test; Pulse Width = 3OO",s, Duty Cycle'" 2.0%.
(2) For this test LED pins 1 and 2 are common and Photo Transistor pins 4,5 and 6 are common.
(3) Isolation Surge Voltage, VISQ, is an internal device dielectric breakdown rating.
TYPICAL TRANSFER CHARACTERISTICS
FIGURE 3 - COLLECTOR-CURRENT ver ... s
COLLECTOR-EMITTER VOLTAGE
FIGURE 2 - COLLECTOR-CURRENT versus
DIODE FORWARD CURRENT
50
-n-'-;:':
25
VCE'10V'
'"fL.
20
;(
.5
10
~G
2.0
'""....
1.0
~
8
E
5.0
--.
;(
I-
:"i ~~-,
f-cr=-ri:'
. Tr -55°C
1--
.5
....
ffi
//
=>
'-'
"'"
~
8
0.5
!:J
25°C
10
1.0
2.0
5.0
10
20
50
100
200
5.0
....
o
IF, FORWARO OIOOE CURRENT(mA)
V
'/......
o
500
V
/
0.1 _ _ _ _ ~
0.05 0.5
,...-
V
~ 15
V
100°C
0.2
IF,50mA
20
1.0
./"
-2.0
3.0
20mA
10~A_ c--5.0mA -
4.0
5.0
6.0
7.0
8.0
VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)
3-18
r--9.0
10
4N38,4N38A
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 4 - FORWARD CHARACTERISTICS
FIGURE 5 - COLLECTOR SATURATION VOLTAGE
1.0
I~ o'251~ -~~-
I--
'"t-w
t-
~
t~
o
0.8
0
50 IC
r- TJ o25"C
~
w
"' «
t~
to
0
'F
in
•
0.6
wo
i"""
1.0
1.0
I
~'"
w=>
ut-
>
:1i
0.2
o
10
J
-«
./
-
1.2
j>
o z
u 0
0.4
...:..i=
0.05
1.0 k
100
.- 0.1
0.2
0.5
1.0
2.0
5.0
IC. COLLECTOR CURRENT (mA)
iF. INSTANTANEOUS FORWARO CURRENT (mAl
FIGURE 6 - TURN-ON TIME
S. 0
vdcoloV
IF 20lC
TJ 25"C
-
2. 0
'"i=
O. 5
20
50
200
0
1. 0
10
FIGURE 7 - TURN·OFF TIME
0
~
",
~~
-r-
w
50
20
..... t--..
i--'
w
0
i=
5.0
'"
O. 2
0
-- -
~~
t::--.
2.0
i'-r-.,
O. I
VCC"IOV
'F 20 IC~
TJ 25"C
100
"-
1. 0
O. 5
0.0 5
0.02
0.5 0.7
O. 2
1.0
2.0
3.0
5.0
7.0
10
20
30
0.5 0.7
50
1.0
2.0
3.0
5.0 7.0
10
20
30
50
'c. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mA)
FIGURE 9 - DARK CURRENT versus
AMBIENT TEMPERATURE
FIGURE 8 - SATURATED SWITCHING TIME
TEST CIRCUIT
+10 V
~
AD ,lIld RL VARIED TO OB1AIN DESIRED CURRENT lEVElS
SCOPE
----,
PHOTO
TRANSISTOR
I
I
I
___ -.lI
1000
;5
~
~«
"-'"
100
~ ~ 10
...ow
u'"'"
j a 1.0
s
~
0.1
0.01
-75
-50
-25
+25
+50
TA. AMBIENT TEMPERATU RE 10C)
3-19
+75
+100
4N38,4N38A
TYPICAL APPLICATIONS
The applications below utilize the 80 volt breakdown capability of the 4N38 and 4N38A eliminating the need for divider networks, zener diodes and the associated assembly costs.
FIGURE 10 - TYPICAL TELETYPE INTERFACE
10mA
•
NPN Boost
70 V
MPS-A06
Rl
1.5 k
Rl
10mA
6
PNP Boost
4
R1 = 3.3 kn, 2.0 W for a 20 mA System
R1 = 1.1 kil, 5.0 W for a 60 mA System
4N38
FIGURE 11 - TELEPHONE LINE PULSE CIRCUIT
Battery Feed
Relay
n.
100
2.0W
MPS-U06
or
2N5681
T
R
FIGURE 12 - 4·AMPERE SOLENOID DRIVER
+48 Vdc
lN4002
,--------,6
-I
r-:-"><-----+---.. I
I
I
I
_J
3-20
n.
250
n.
-48 V
68V· 1.0 W
lN4760
0.5W
'---t-.-+--i
250
2N6044
®
L14Hl
thru
L14H4
MOTOROLA
TO-92
PHOTO TRANSISTORS
PLASTIC NPN SILICON PHOTO TRANSISTORS
NPN SILICON
· .. designed for applications in industrial inspection, processing and
control, counters, sorters, switching and logic circuits or any design reo
quiring extremely high radiation sensitivity, and stable characteristics.
•
Economical Plastic Package
•
Sensitive Throughout Visible and Near Infrared Spectral Range
for Wide Application
•
Range of Radiation Sensitivities and Voltages for Design Flexibility
•
TO·92 Clear Plastic Package for Standard Mounting
•
Annular Passivated Structure for Stability and Reliability
•
Ideal Companion to the MLED92, 93, 94, and 95 IR Emitter
•
Ole Placement Will Be
Within the Boundanes
of the Dotted Circle.
riB fA
MAXIMUM RATINGS
Symbol
L14Hl,3
L 14H2,4
Unit
Collector-Emitter Voltage
VCEO
60
30
Volts
Collector-Base Voltage
VCBO
60
30
Volts
Emitter-Base Voltage
VEBO
5.0
Rating
Volts
_____
_2.67_
mW
mW/oC
-6510+100
°c
Light Current
IL
_100
Total Device Dissipation@TA = 25°C
Derate above 25°C
PD
~200
TJ,Ts1g (1)
Operating and Storage Junction
Temperature Range
-
5.0
SEATINJTj['_
PLANE F
--
o
10
TA
o
0
900 nm SOURCE
/'
SECT. A·A
'''L- N
;1-- 1
/'
/'
DIM
A
B
e
0
F
H
J
./
~
0.2
0.1
/'
V
0.2
/'
0.5
0.7
k""
1.0
2810 OK TUNGSTEN SOURCE
II II
2.0
5.0
1.0
10
H, RAOIATION FLUX DENSITY ImW/cm 2)
3-21
0
~. ~
R
PIN 1. EMITTER
2. eOLLEeTOR~
3. BASE
0-0-0-
G
/"
Jl q
rl- ±dC
STYLE 14,
250e
' - - -Vee 5.0 V
/'
K
NOTES,
1. CONTOUR OF PACKAGE BEYOND ZONE "P"
2. IS UNCONTROLLEO.
DIM "F" APPLIES BETWEEN "H" AND
"L". DIM "0" & "S" APPLIES BETWEEN
"L" & 12.70 mm (0.5") FROM SEATING
PLANE. LEAO DIM IS UNCONTROLLEO
IN "W' & BEYONO 12.70 mm lOS')
FROM SEATING PLANE.
FIGURE 1 - NORMALIZED LIGHT CURRENT versus
RADIATION FLUX DENSITY
=.
:ljf.!fi-:- :.J J 1-=
(1) Heat Sink should be applied to leads during soldering to prevent case temperature
from exceeding 1 COOC.
~
L
l
,
mA
-Indicates JEDEC Registered Data.
~-H r
r
K
L
N
P
R
s
20
MILLIMETERS
MIN
MAX
4.32
5.33
4.44
5.21
3.1B
4.19
0.41
0.56
0.41
0.48
1.14
1.40
2.54
2.41
2.61
12.10
6.35
2.03
2.92
2.92
3.43
0.36
0.41
INCHES
MIN
MAX
0.170 0.210
0.115 0.205
0.125 0.165
0.D16 0.022
0.016 0.019
0.045 0.055
0.100
0.095 0.105
0.500
0.250
0.080 0.115
0.115
0.135
0.014 0.016
-
All JEOEC dimensions and notes applv_
CASE 29·02
TO·92
L14H1 THRU L14H4
STATIC ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.1
Characteristic
Collector Dark Current (Note 2)
Symbol
Min
Typ
Max
Unit
10
-
-
100
nA
30
60
-
-
(VCE = 10 VI
•
Collector-Emitter Breakdown Voltage (Note 2)
Volts
V(BRICEO
(lC=10mAI
L14H2,4
L14Hl,3
Collector-Base Breakdown Voltage (Note 2)
(lC = 100 ILAI
(IF =01
-
V(BRICBO
L14H2,4
L14Hl,3
30
60
Emitter-Base Breakdown Voltage (Note 2)
(IE =100ILA,IC=01
Saturation Voltage
-
5.0
V(BRIEBO
Volts
VCE(satl
-
Volts
0.4
Volts
Unit
(lc=10mA,IB=I.0mAI
OPTICAL CHARACTERISTICS (TA = 25 0 C unless otherwISe noted.1
Characteristic
Symbol
Collector Light Current (Notes 1,4,51
(VCE = 5.0 V, RL = 100 nl
Turn-On Time (Note 3)
I
Turn·Off Time (Note 31
J
L14Hl,4
L14H2,3
(VCE = 30 V, IL = 800 I/oA,
RL = 1.0 knl
3. For unsaturated rise time measurements. radiation is provided by
a pulsed GaA. (gallium·arsenidel light·emitting diode (/\ "'" 0.9
1000
700
500
I
5. Die faces
!;;
'":;
.=.
1 2K
10
7.0
5.0
3.0
2.0
1.0
2.0
4.0
6.0
~ ~gg
-
~ ~~~
'20mA
8.0
10
I/oS
12
'"~.
I"-
14
-
16
-
18
.=
SOURCE: MLED92
TA' 25°C
PW .. 300",
IF • LOA
........
"
::>
.....
'10mA
o
I/oS
7.0
"
"-
;: 1K
........
8.0
cu~ed side of package.
3K
"
-
mA
FIGURE 3 - PULSED LIGHT CURRENT versus DISTANCE
SOURCE: MLE092
TA·250C
30
20
-
10K
7K
5K
300
200
70
50
-
seconds.
4. Measurement mode with no electrical connection to the
base lead.
FIGURE 2 - CONTINUOUS LIGHT CURRENT versus
DISTANCE
50mA
0.5
2.0
I'ml with a pulse width equal to or greater than 500 micro-
2. Measured under dark conditions. (H::::::::Q).
IF
Max
toff
a tungsten source at a color temperature of 2870o K.
"-
TVp
-
ton
NOTES:
1. Radiation Flux Density (H) equal to 10 mW/cm 2 emitted from
1
.... 100 "-
Min
IL
--
-....:.. OOmA
...........
100
70
50
30
.....
'100 mA
20
10
20
o
2.0
4.0
6.0
8.0
10
12
14
d, DEVICE SEPARATION (mm)
d, DEVICE SEPARATION (mm)
3-22
16
18
20
®
MLED60
MLED90
MOTOROLA
INFRARED-EMITTING DIODES
INFRARED-EMITTING DIODES
930nm
. designed for applications requiring high power output, low drive
power and very fast response time. This device is used in industrial
processing and control, light modulators, shaft or position encoders,
punched card and tape readers, optical switching, and logic circuits.
It is spectrally matched for use with silicon detectors.
•
High Intensity - 550 fJW/str (Typ) @ IF
350 fJW/str (Typ) @ IF
PN GALLIUM ARSENIDE
•
'20 MILLIWATTS
= 50 mA
- MLED60
50 mA - MLED90
=
•
Infrared Emission - 930 nm (Typ)
•
Low Drive Current - Compatible with Integrated Circuits
•
Unique Molded Lens for Durability and Long Life
•
Economical Plastic Package
•
Small Size for High Density Mounting
•
Easy Cathode Identification - Wider Lead
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
3.0
Volts
Reverse Voltage
Forward Current-Continuous
Total Power Dissipation @ T A = 25°C
Derate above 25°C
OperatIng and Storage JunctIon
IF
80
mA
POlll
120
2.0
mW
mW/oC
T J,Tstg
AO to +85
°c
Temperature Range
THERMAL CHARACTERISTICS
r=K
Characteristic
Symbol
Thermal Resistance, Junction to Ambient
ROJ8 111
Solder Temperature
I
I
L
Max
1
500
Unit
°C/W
260°C for 3 sec 1116" from case
I
J
J+
I
-
2
(llPnnted Circuit B~)ard Mounting
K
FIGURE 1 - INSTANTANEOUS RADIANT INTENSITY
versus FORWARD CURRENT
20
10
>Z
«
~ ~~
+~
'"
III
25'C
./
'~" -= 2.0
MlED60
~~
./
MLE090
./
~~ 1.0
r--
MILLIMETERS
MAX
MIN
2.34
2.59
B
2.11
2.36
2.39
2.64
C
0
0.64
0.74
f
0.46
0.56
1.57
H
1.83
J
0.20
0.30
K
9.65
M
9°
11°
DIM
A
5~O.5
~Ul
~~O.2
iZz
0.1
0.05
0.02
2.0
5.0
10
20
50
100
200
J
----'
STYLE 3:
PIN 1. EMITIER
2. COLLECTOR
5.0
<5
.-
~
1.0
~
....
z
O. 7
C
<
0.5
~
./
-
1.2
1.0
1.0
r-
<
i-'""
""-
.......
...........
"'
'"
E
0.3
1.Ok
10
100
iF. INSTANTANEOUS FORWARD CURRENT (mAl
-75
-50
-25
15
50
75
100
150
TJ. JUNCTION TEMPERATURE (OC)
FIGURE 4 - CONTINUOUS RADIANT INTENSITY
versus FORWARD CURRENT
i ===-
.......
FIGURE 5 - SPATIAL RADIATION PATTERN
lOOO
~
600
TA • 25 0 C
v;
~;;;
300
.........
\;;
<
MLE06~
Q
~
100
~ 60
<
g 30
~
z
~
!2
.....
~ED90
V
V V
V
10
1.0
2.0
4.0
6.0
10
10
40
60 80 100
IF. CONTINUOUS FORWARD CURRENT (mA)
Output saturation effects are not evident at currents up to 2 A as shown on Figure 1. However, power output decreases due to heating of the
semiconductor as indicated bV Figure 3. To estimate output level, average junction temperature may be calculated from:
TJ(AV) - TA ~ fJ JA VFIFO
where 0 is the d'tJty cycle of the applied current, IF' Use of the above method should be restricted to drive conditions employing pulses of
less than 10 /.lS duration to avoid errors caused by high peak junction temperatures.
3-24
®
MLED92
MOTOROLA
lOW COST
INFRARED· EMITTING DIODE
INFRARED·EMITTING DIODE
PN GALLIUM ARSENIDE
. designed for industrial processing and control applications such
as light modulators, shaft or position encoders, end of tape detectors,
and optical coupler applications. Supplied in TO-92 package for ease
of mounting and compatibility with existing automatic insertion equipment.
•
High Power OutputPo = 150tlW ITyp) @ IF = 50 mA
•
Infrared-Emission - 930 nm ITyp)
•
One-Piece, Unibloc Package for High Reliability
Ole Placement Witl Be
Within the Boundaries
of the Dotted Circle.
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current-Continuous
Total Power Dissipation @ T A ~ 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VR
3.0
Volts
IF
100
mA
POlll
215
2.86
mW
mW/oC
TJ,T stg
-65 to +100
°c
SEATIN:I~~
J~-B
H
A
PLANET
F
THERMAL CHARACTERISTICS
L
---.--L
I
-1 0 1-
o-If.;'
I
Characteristic
Thermal Resistance Junction to Ambient
I
Symbol
I
Max
350
ROJA(ll
j~~G
Unit
°C/W
(ll RI'}JA(1) is measured with the device soldered into a typical printed circuit board.
~t
r IR
STYLE 20,
PIN 1. N.t
K
SECT. A·A
c
2.CATHOOE~
3. ANODE
.
0 -6-0
1
23
N
N
NOTES.
1. CONTOUR OF PACKAGE BEYOND ZONE ..p.•
2 IS UNCONTROLLED.
DIM "F" APPLIES BETWEEN "H" AND
"L". DIM "0" & "S" APPLIES BETWEEN
"L" & 12.70 mm 10.5") FROM SEATING
PLANE. LEAD DIM IS UNCONTROLLED
IN "H" & BEYOND 12.70 mm 10.5"1
FROM SEATING PLANE.
FIGURE 1 - RELATIVE SPECTRAL OUTPUT
1.0
/
C
~ O.B I - -
«
IF = 50 mA
TA=25 D C
~
~0.6
"
\
/
>-
~
>=>
~ 0.4
~
/'
0
880
V
\
1\
\
1/
!i:
~O.2
/
'\.
/
'\.
""900
920
940
A. WAVELENGTH (nm)
960
980
DIM
A
B
C
0
F
G
H
J
K
L _
N
P
R
S
MIlliMETERS
MIN MAX
4.32
5.33
4.44
5.21
3.18
4.19
0.41
0.56
0.41
0.48
1.14
1.40
2.54
2.41
2.67
12.70
6.35
2.03
2.92
2.92
3.43
0.36
0.41
INCHES
MIN
MAX
0.170 0.210
0.175 0.205
0.125 0.165
0.016 0.022
0.016 0.019
0.045 0.055
- 0.100
0.095 0.105
0.500
0.250
0.080 0.115
0.115
-
.014
O.ill"
All JEDEC dimensions and notes applv_
CASE 29-02
TO-92
3-25
MLED92
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Fig. No.
Symbol
Min
Typ
Reverse Leakage Current
IVR = 3.0 V, RL = 1.0 Megohm)
-
IR
-
50
Revprse Breakdown Voltage
(lR = 100 ~AI
-
V(BR)R
3.0
-
-
Instantaneous Forward Voltage (Note 3)
2
vF
-
1.2
1.5
Volts
-
CT
-
150
-
pF
Fig. No.
Symbol
Min
Typ
Max
3.4
Po
50
150
10
-
0.66
Characteristic
(IF =50mA)
Total Capacitance
(VR=OV,f= 1.0MHz)
OPTICAL CHARACTERISTICS ITA
=
Unit
nA
Volts
25°C unless otherwise noted)
Characteristic
Total Power Output (Notes 1 and 3)
•
Max
(IF = 50 mAl
Radiant Intensity (Note 2)
(IF = 50mA)
Peak E mission Wavelength
1
;.p
-
930
Spectral Line Half Width
1
"""
-
48
NOTE:
Unit
-
~W
mW/steradian
nm
nm
1. Power Output, po. is the total power radiated by the device into a solid angle of 2" steradians. It is measured by directing all radiation
leaving the device, within this solid angle, onto a calibrated silicon solar cell.
2.
Irradiance from a Light Emitting Diode (LED) can be calculated by:
H
=~
d2
3. Pulse Test: Pulse
where H i, irradiance in mW/cm 2 , 10 is radiant intensity in mW/steradian;
d is distance from LED to the detector in em.
Width~300}.J.s,
Duty
Cycle~2.0%.
FIGURE 3 - POWER OUTPUT versus JUNCTION TEMPERATURE
FIGURE 2 - FORWARD CHARACTERISTICS
3.0
22
~
~
i 2.0
0;;;
~
...
-
:!~
~
r-...
2.0
:;
o~
./
1.4
........
t--,
"-
1.0
~
~
o.7
'"w
~ o. 5
1.0
1.0
~f-"
0.3
10
1.0 k
100
if. INSTANTANEOUS fORWARD CURRENT (mA)
FIGURE 4 - INSTANTANEOUS POWER OUTPUT
TJ
~
15°C
~ 1.0
~ O. 5
~
~
O. 1
;: o. 1
z
~ 0.0 5
~O.02
0.0 1
2.0
5.0
10
20
50
100
200
500
-50
-25
15
50
75
FIGURE 5 - SPATIAL RADIATION PATTERN
5.0
I~
~ 2.0
·75
TJ. JUNCTION TEMPERATURE 10C)
10
~
."""I.........
.t
I--'"'
1000 2000
iF. INSTANTANEOUS FORWARD CURRENT ImA)
3-26
100
150
®
MLED93
MLED94
MLED95
MOTOROLA
LOW COST
INFRARED-EMITTING DIODE
INFRARED-EMITTING DIODE
· .. designed for industrial processing and control applications such
as light modulators, shaft or position encoders, end of tape detectors,
and optical coupler applications. Supplied in TO-92 package for ease
of mounting and compatibility with existing automatic insertion
equipment.
•
High Power Output - (Typ)
MLED93 - 3.0 mW
MLED94 - 5.0 mW
MLED95 - 7.0 mW
@ 'F = 100 mA (duty cycle ";;2.0%)
•
Infrared-Emission -
•
One-Piece, Unibloc Package for High Reliability
PN GALLIUM ARSENIDE
•
930 nm (Typ)
Die Placement Will Be
Within the Boundaries
of the Dotted Circle.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
6.0
Volts
Reverse Voltage
Forward Current-Continuous
100
rnA
215
2.86
rnW
rnW/oC
TJ,Tstg
-65 to +100
°C
1
Symbol
1
Max
1
Unit
1
R8JA(1)
1
350
1
°C/W
'F
PO(l)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Ambient
STYLE 20:
PIN 1. N.C.
2. CATHOOE
3. ANOOE
(l)ROJA(l) is measured with the device soldered into a tvpical printed circuit board.
NOTES:
1. CONTOUR OF PACKAGE 8EYONO ZONE "P"
2. IS UNCONTROLLED.
OIM "F" APPLIES BETWEEN "H" AND
"L". DIM "0" & "S" APPLIES BETWEEN
"L" & 12.70 mm 10.5") FROM SEATING
PLANE. LEAD OIM IS UNCONTROLLEO
IN "H" & 8EYONO 12.70 mm 10.5")
FROM SEATING PLANE.
FIGURE 1 - RELATIVE SPECTRAL OUTPUT
1.0
/
r---
IF = 50 rnA
TA = 25°C
/
/
/"
V
/
"\.
\
1\
\
/
/
900
G
r\.
o
880
DIM
A
B
C
0
F
\
920
940
II, WAVElENGTH (nrn)
960
"-
"'"
980
3-27
H
J
K
L
N
P
R
S
MILLIMETERS
MAX
MIN
4.32
5.33
4.44
5.21
3.18
4.19
0.41
0.56
0.41
0.48
1.14
1.40
2.54
2.41
2.67
12.70
6.35
2.03
2.92
2.92
3.43
0.41
0.36
-
INCHES
MIN
MAX
0.170 0.210
0.175 0.205
0.125 0.165
0.D16 0.022
0.016 0.019
0.045 0.055
0.100
0.095 0.105
0.500
0.250
0.115
0.080
0.115
0,1
0.014 0.016
-
-
All JEOEC dimensions and notes apply.
CASE 29-02
TO-92
MLED93, MLED94, MLED95
ELECTRICAL CHARACTERISTICS (TA
=25°C unless otherwise noted)
Fig. No.
Symbol
Min
Typ
Reverse Leakage Current
(VR = 6.0 V, RL = 1.0 Megohm)
-
IR
-
50
Reverse Breakdown Voltage
(IR = 100 pAl
Instantaneous Forward Voltage
(IF = 50 rnA)
Total Capacitance
(VR = 0 V, I = 1.0 MHz)
-
V(BR)R
6.0
2
vF
-
Characteristic
-
Unit
nA
-
-
Volts
-
1.3
1.8
Volts
CT
-
150
-
pF
Fig. No.
Symbol
Min
Typ
Max
Unit
3,4
Po
2.0
4.0
6.0
3.0
5.0
7.0
-
-
13.2
22.0
30.8
930
-
nm
48
-
nm
Max
.
OPTICAL CHARACTERISTICS (TA = 2J;°C unless otherwise noted)
Characteristic
Total Power Output (Notes 1 and 3)
(IF =100 rnA)
•
Radiant Intensity (Notes 2 and 3)
(IF =100 rnA)
mW
MLED93
MLED94
MLED95
mW/steradian
10
MLED93
MLED94
MLED95
Peak Emission Wavelength
1
~P
Spectral Line Hall Width
1
A~
NOTE:
,. Power Output. Po- is the total power radiated by the device. It is measured by directing all radiation leaving the device onto a calibrated integrating sphere.
2. Irradiance from a Light Emitting Diode (LED) can be calculated by:
H = ~ where H is irradiance in mW/cm 2 , 10 is radiant intensity in mW/steradian;
d2 d is distance from LED to the detector in em.
3. Pulse Test: Pulse Width -::;;;300 ~s. Duty Cycle ~2.0%.
FIGURE 3 - POWER OUTPUT versus
JUNCTION TEMPERATURE
FIGURE 2 - FORWARD CHARACTERISTICS
3.0
~
I"-...
2.0
:J
~o
~
.......
~
"""
1.0
....
5 o. 7
'"w
./
""'- ...........
~ 0.5
12
.t
lI"'""
1.0
1.0
0.3
10
100
iF, INSTANTANEOUS FORWARD CURRENT (mA)
1.0k
50
!:;
~ 20
~
5.0
~
==
f=
S 2.0 f--
F
f=
r-
MlED93
MlED94
MlED95
z
~ 1.0
;:! 0.5
!!!l
~
0.2
0.1
V
2.0
5.0
10
20
50 100 200
iF, INSTANTANEOUS FORWARD CURRENT (mA)
-25
25
50
75
FIGURE 5 - SPATIAL RADIATION PATTERN
100
~ 10
-50
TJ, JUNGTION TEMPERATURE lOG)
FIGURE 4 - INSTANTANEOUS POWER OUTPUT
I
-75
500
3-28
100
150
@
MLED900
MOTOROLA
INFRARED-EMITTING DIODE
930nm
INFRARED-EMITTING DIODE
PN GALLIUM ARSENIDE
· .. designed for applications requiring high power output, low drive
power and very fast response time. This device is used in industrial
processing and control, light modulators, shaft or position encoders,
punched card readers, optical switching, and logic circuits. It is
spectrally matched for use with silicon detectors.
120 MILLIWATTS
• High Power Output - 550 Jl.W (Typ) @ IF = 50 mA
• Infrared Emission - 930 nm (Typ)
• Low Drive Current - 10 mA for 120 Jl.W (Typ)
• Unique Molded Lens for Durability and Long Life
• Economical Plastic Package
MAXIMUM RATINGS
Rating
Reve ..... Volt...
Forward Current-Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Operating and Storage Junction
TernD8rature Ranoe
Svmbol
Value
Unit
VR
3.0
Volts
IF
80
rnA
PoW
120
2.0
rnW
rnW/oC
-40 to +85
°c
TJ,Tstg (2)
t===O~=j
STYLE 2:
THERMAL CHARACTERISTICS
PIN I. ANODE
2, CATHODE
Svmbol
Characteristic
I
Thermal Resi tance Junction to Ambient
Max
I
8JA
Unit
I
500
°CIW
(1) Printed Circuit Board Mounting
(2) He.t Sink should be applied to leads during solder;ng to prevent Case Temperatur.
exceeding 8SoC.
FIGURE 1 - RELATIVE SPECTRAL OUTPUT
I0
/
If = 50 mA
f--- TA= 25--C
/
"\
V
NOTE:
1. lEAD IDENTIFICATION: SQUARE
BONDING PAD OVER PIN 2,
\
1\
'\
/
II
DIM
A
C
"\.
/
"\
/
~
V
o
880
0
F
900
920
940
A, WAVElENGTH Inm)
980
960
3-29
H
K
l
Q
MillIMETERS
MIN MAX
3.56
4.57
0,46
0.23
1.02
6.35
0.33
1.91
4.06
5,33
0.61
0.28
1.21
0.48
NOM
INCHES
MIN MAX
0.140
0,180
0.018
0.009
0.040
0.250
0,013
0.075
CASE 171-02
0.160
0.210
0,024
0.011
0.050
0.019
NOM
•
MLED900
ELECTRICAL CHARACTERISTICS (T A
= 25°C unless otherwise noted)
Fig. No.
Symbol
Typ
50
Unit
IR
Min
-
Max
-
-
nA
Reverse Breakdown Voltage
!lR = 100 ~AI
-
VIBRIR
3.0
-
-
Volts
Forward Voltage
2
VF
-
1.2
1.5
Volts
CT
-
150
-
pF
Unit
Characteristic
Reverse Leakage Current
IVR = 3.0 V. RL = 1.0 Megohml
!IF =50mAI
-
Tota' Capacitance
IVR • 0 V, f = 1.0 MHzl
OPTICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
Chllracteristics
•
Fig. No,
Symbol
3,4
Po
Total Power Output (Note 11
!IF=SOmAI
Radiant Intensity (Note 2)
(IF = 50 mAl
Min
Typ
MIX
200
550
-
-
2.4
-
~W
10
Peak Emission Wavelength
1
Xp
Spectral Line Half Width
1
':'X
mW/steradian
nm
930
-
-
48
nm
NOTE.
1. Power Output, po. is the total power radiated by the device into a solid angle of 211' steradians. It is measured by directing all
radiation leaving the device, within this solid angle, ontO a calibrated silicon solar cell.
Irradiance from a Light Emitting Diode (LED) can be calculated by:
2.
where H is irradiance in mW/cm2 , 10 is radiant intensity in mW/steradian;
d is distance from LEO to the detector in cm.
3.0
FIGURE 3 - POWER OUTPUT versus JUNCTION TEMPERATURE
FIGURE 2 - FORWARO CHARACTERISTICS
~ 2.0
I'-.
::;
~
""- I'-...
'-...
is
~
5
i!:
§:
1.2
-
1.0
1.0
-
./
'"w
!
i-'"
~
~
'"~
~
rg
:il
z
.
l;;
""
In
0.3
-75
1.0 k
10
100
iF. INSTANTANEOUS FORWARD CURRENT ImAI
1=:1=
o. 7
.........
..........
~ 0.5
-50
-25
25
50
75
III1l
150
TJ,JUNCTION TEMPERATURE I'CI
FIGURE 4 - INSTANTANEOUS POWER OUTPUT
versus FORWARO CURRENT
20
10
1.0
FIGURE 5 - SPATIAL RADIATION PATTERN
TJ=25 0 C
5.0
2.0
1.0
0.5
0.2
0.0211i11ii1i
0.1
:!~ 0.05
o'!
2.0
5.0
10
20
50
100
200
500
1000 2000
;F, INSTANTANEOUS FORWARD CURRENT ImAl
Output saturation effects are not evident at current, up to 2 A as shown-on Figure 4. However, saturation does occur due to heating of the
Hmiconductor as indicated by Figure 3. To estimate output level, averalle junction temperature may be calculated from:
TJ(AV)" T A + 8 JA VFIFO
where 0 is the duty cycle of the applied current, IF' Use of the above method should be restricted to drive conditions employing pul ... of
Ie.. than 10 ,",s duration to avoid errors caused by high peak junction temperatures.
3·30
®
MLED930
MOTOROLA
INFRARED-EMITTING DIODE
· .. designed for applications requiring high power output, low drive
power and very fast response time. This device is used in industrial
processing and control, light modulators, shaft or position encoders,
punched card readers, optical switching, and logic circuits. It is
spectrally matched for use with silicon detectors.
•
High·Power Output - 650, Jl.W (Typ) @ IF = 100 mA
•
Infrared-Emission - 900 nm (Typ)
•
Low Drive Current - 10 mA for 70 Jl.W (Typ)
•
Popular TO·18 Type Package for Easy Handling and Mounting
•
Hermetic Metal Package for Stability and Reliability
INFRARED-EMITTING DIODE
900nm
PN GALLIUM ARSENIDE
250 MILL/WATTS
•
CONVEX LENS
MAXIMUM RATINGS
Ratina
Svmbol
Value
Unit
VR
3.0
Volts
Reverse Voltage
Forward Current·Continuous
Total Device Dissipation @ T A = 25°C
IF
ISO
mA
PD(11
250
mW
mW,oC
Derate above 2So C
25
Operating and Storage Junction
SEATING
PLANE
°c
TJ,T stg
-6Sto+125
Svmbol
Max
Unit
6JA
400
°C/w
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance. Junction to Ambient
I
(1 )Printed Circuit Soard Mounting
STYLE I:
PIN 1. ANODE
PIN 2. CATHODE
FIGURE 1 - RELATIVE SPECTRAL OUTPUT
1.0
~
::0
«
~
0
~
~>=>
0
/"
/
0.6
.t
0.2
o
/
\
1/
0.4
-
800
/
/
\
1\
\
/
DIM
A
B
C
o
\
l\.
/
840
NOTES:
1. PIN 2 INTERNALLY CONNECTED
TO CASE
2. LEADS WITHIN 0.13 mm (0.005)
RADIUS OF TRUE POSITION AT
SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
1\
IF=SOmA
0.8 rTA = 25°C
'"~
~
,
880
920
960
F
G
H
. . . . r-.\000
J
K
L
M
MIN
5.31
4.52
5.08
0.41
0.51
2.54
0.99
0.84
12.70
3.35
MAX
5.84
4.95
6.35
0.48
1.02
BSC
1.17
1.22
4.01
450 BSC
A, WAVELENGTH (nml
CASE 209-01
3-31
MLED930
ELECTRICAL CHARACTERISTICS ITA = 25°C unle.. otherwise notedl
Fig. No.
Symbol
Min
Typ
Max
Unit
Reverse Leakage Current
IVR = 3.0 V)
-
IR
-
2.0
-
nA
Reverse Breakdown Voltage
-
VIBRIR
6.0
20
-
Volts
Forward Voltage
IIF =50mAI
2
VF
-
1.25
1.5
Volts
Total Capacitance
-
CT
-
150
-
pF
Characteristic
IIR = 100 "AI
IVR = 0 V. f = 1.0 MHz)
OPTICAL CHARACTERISTICS IT A - 25°C unless otherWise noted I
•
Characteristic
Total Power Output (Note 1)
Fig. No.
Symbol
Min
Typ
Max
3.4
Po
200
650
-
Unit
"W
IIF = 100 mAl
Radiant Intensity (Note 21
mW/steradian
1.5
10
IIF = 100 rnA)
Peak Emission Wavelength
1
'P
-
900
-
nm
Spectral Line Half Width
1
M
-
40
-
nm
NOTE:
1. Power Output, po. is the total power radiated by the device into a solid angle of 211' steradians. It is measured by directing arl radiation
leaving the device, within this solid angle. onto a calibrated silicon solar cell.
2.
Irradiance from a Light Emitting Diode (LED) can be calculated by:
where H is irradiance in mW/cm2 ; 10 is radiant intensity in mW/steradian;
d is distance from LED to the detector in cm.
FIGURE
FIGURE 3 - POWER OUTPUT v.rsusJUNCTION TEMPERATURE
2 - FORWARD CHARACTERISTICS
3.0
2.2
~
c
w
,..
""~ ;;;2.0
~
...
~ ~1.8
13
z'"
:>
~
Ww
~ ~
~~
;!;
1.6
...
1.0
~
c
0.7
:>
/'
1.4
1.0
1.0
10
5.0
...
~
~
-75
1.0
0.5
z
./
z
~O.05
0.02
2.0
5.0
10
20
50
100
200
500
-25
25
50
75
100
FIGURE 5 - SPATIAL RAOIATION PATTERN
Tr25 0 C
0.1
-50
TJ. JUNCTION TEMPERATURE IOC)
~ 0.2
~
.............
0.3
1.0 k
~ 2.0
'"ffi
..........
.t
10
100
iF. INSTANTANEOUS FORWARD CURRENT ImA)
EE
r....
~
FIGURE 4 -INSTANTANEOUS POWER OUTPUT
versus FORWARO CURRENT
~
"~
~ 0.5
20
oS
" ........
ox:
-
1.2
1<
r-....
2.0
N
:::;
1000 2000
3-32
150
®
MOCl19
MOTOROLA
NPN PHOTO DARLINGTON AND PN INFRARED
EMITTING DIODE
OPTO
COUPLER/ISOLATOR
· .. Gallium Arsenide LED optically coupled to a Silicon Photo
Darlington Transistor designed for applications requiring electrical
isolation, high-current transfer ratios, small package size and low
cost; such as interfacing and coupling systems, phase and feedback
controls, solid-state relays and general-purpose switching circuits.
•
High Isolation Voltage-
•
High Collector Output Current
•
FastSwitchingTimas@IC=2.SmA
tr = 101'5 (Typ)
tf= SOilS (Typ)
@ IF = 10 mA-
IC = 30 mA (Min)
•
Economical, Compact, Dual-In-Line Package
•
Base Not Connected
MAXIMUM RATINGS (TA
•
Excellent Frequency Response 30 kHz (Typ)
vlSO = 7000 V IMin)
•
DARLINGTON OUTPUT
= 2SoC unless otherwise notedl
AMine
I
Symbol
I
Value
Unit
INFRARED·EMITTING DIODE MAXIMUM RATINGS
Volts
Reverse Voltage
VR
3.0
Forward Current - Continuous
IF
100
mA
Forward Current - Peak
IF
3.0
Amp
(Pulse Width = 300 I'S, 2.0% Outy Cycle I
Total Power Dissipation @TA - 2SoC
Po
150
mW
2.0
mW/oC
Negligible Power in Transistor
Derate above 25°C
PHOTOTRANSISTOR MAXIMUM RATINGS
Collector-Emitter Voltage
VCEO
30
Volts
Emitter-COllector Voltage
VECO
7.0
Volts
COllector-Base Voltage
VCBO
30
Volts
Po
150
mW
2.0
mW/oC
Total Power Dissipation @ T A - 2SoC
Negligible Power in Diode
Derate above 2So C
CJ:£!:I
5
4
I
STYLE 3,
PIN 1. ANODE
2. CATHODE
----'3. NC
4. EMITTER
O
l--
B
I
~: ~~LLECTOR
TOTAL DEVICE RATINGS
250
mW
3.3
mW/oC
TJ
-55 to +100
Tstg
-S5to+150
°c
°c
°c
Total Device Dissipation @ T A == 25°C
Equal Power Dissipation in Each Element
Derate above 25°C
Po
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature (10 s)
-
260
FIGURE 1 - DEVICE SCHEMATIC
NOTES,
1. OIMENSIONS A AND B ARE DATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS,
r4ilQIiIiMU5i®[i]!I@B®J
4. DIMENSION L TO CENTER OF LEAOS
WHEN FORMEO PARALLEl.
I. DIMENSIONING AND TOLERANCING PER
ANSI YI4.1. 1973.
A
8
C
B.13
6.10
8.89
6.60
o
2.92
0.41
5.0B
0.51
F
1.02
G
J
K
1.78
BSC
0.30
L
2.54
0.20
2.54
7.62
M
00
150
N
0.38
2.54
2.03
p . 1.27
3.81
BSC
CASE 730A·Ol
3-33
MOC119
LED CHARACTERISTICS (T A = 25°C unless otherwise noted)
Typ
Max
Unit
Reverse Leakage Current
(VR = 3.0 V, RL = 1.0 M ohms)
IR
-
0.005
100
JJA
Forward Voltage
(IF = lOrnA)
VF
-
1.2
1.5
Volts
C
-
150
-
Symbol
Min
Typ
Max
Unit
ICEO
-
8.0
100
nA
Collector-Emitter Breakdown Voltage
(lC = 100JJA, IB = 0)
V(BR)CEO
30
60
-
Volts
Emitter-Collector Breakdown Voltage
(IE = 10JJA, IF = 0)
V(BR)ECO
7.0
8.0
-
Volts
Symbol
Min
Typ
IC
30
70
-
rnA
-
Symbol
Characteristic
•
Capacitance
(VR = 0 V, f = 1.0 MHz)
Min
pF
PHOTOTRANSISTOR CHARACTERISTICS (T A = 25°C and IF = 0 unless otherwise noted.)
Characteristic
Collector-Emitter Dark Current
(VCE=10V,IF=0)
COUPLED CHARACTE RISTICS (T A - 25°C unless otherwISe noted.)
Characteristic
Collector Output Current (11
Max
Unit
(VCE = 2.0 V, IF = lOrnA)
-
-
1011
-
Ohms
VCE(sat)
-
0.8
1.0
Volts
-
-
1.0
-
pF
Rise Time
(VCC = 10 V, IC = 2.5 rnA, RL = lOOn)
tr
-
10
-
1'5
Fall Time
(VCC = 10 V, IC = 2.5 rnA, RL = 100 n)
tf
-
50
-
I'S
Isolation Surge Voltage (2,5), 60 Hz ae Peak, 5 Second
VISO
I solation Resistance (2)
(V=500V)
Collector-Emitter Saturation Voltage (1)
(lC= 10mA,IF= lOrnA)
Isolation Capacitance (2)
(V = 0, f = 1.0 MHz)
7000
Volts
SWITCHING CHARACTERISTICS (Figures 4 5)
(1) Pulse Test: Pulse Width = 300JJs, Duty Cycle .. 2.0%.
(2) For this test LEO pins 1 and 2 are common and Photo Transistor pins 4 and 5 are common.
(3) I F adjusted to yield IC = 2.0 rnA and ic = 2.0 mAP·P at 10 kHz.
(4) td and tr are inversely proportional to the amplitude of IF; ts and tf are not significantly affected by IF.
(5) Isolation Surge Voltage, VISQ, is an internal device dielectric breakdown rating.
3-34
MOC119
DC CURRENT TRANSFER CHARACTERISTICS
FIGURE 2 - COLLECTOR CURRENT v .......
COLLECTOR·EMITTER VOL TAGE
0
200
IF:~!--
0
---
I
0
/
f..--r~-
VCE:1.0V
•
'"a:
~
0
~
8
IF: 5.0 rnA
~',I'
0.2
~-
I /"'I:.-- f-
VCE: 1.0V
a:
'l
0
Ii Ll
100
>~
IF:l0rnA_
-~-
II
0
<
,g
-
I--"
I
0
0
FIGURE 3 - COLLECTOR CURRENT versus
DIODE CURRENT
l/,
10
~
//
IF: 2.0 rnA
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
1.8
If
1.0
2.0
3.0
5.0 7.0 10
10
IF. DIODE CURRENT ImAI
30
SWITCHING CHARACTERISTICS
FIGURE 5 - VOLTAGE WAVEFORM
FIGURE 4 - SWITCHING TEST CIRCUIT
CONSTANT
CURRENT
INPUT
IC(on)
N.C.
Input
MOOULATION 1.0~F
INPUT ~,I--'''''''-~''''''
47
= 2.5 mA
L
o-.J
90%
-
......--'--...-0 OUTPUT
IF
IC 10C) : 2~0 rnA
lAC SINE WAVE):
i,
2~0
Output
rnA P.P.
FIGURE 6 -
~
~
~~
FORWARD CHARACTERISTIC
2.2
2.0
g ~1.8
......
z'"
S ~ 1.6
;:>
~
/'
14
1.2
1.0
1.0
.-
""'"
10
100
iF. INSTANTANEOUS FORWARD CURRENT (rnA)
3-35
1.0 k
50
100
MOC119
TEMPERATURE CHARACTERISTICS
•
FIGURE 8 - TRANSFER EFFICIENCY
versus TEMPERATURE
FIGURE 7 - COLLECTOR-EMITTER DARK CURRENT
versus TEMPE RATURE
45
or-.
440
./
-
......
0
./
r-....
"
0
./
"'-
0
r-.....
......
"'"'-
0
10 I 0
10
20
30
40
50
60
70
80
90
100
10
TEMPERATURE (OC)
20
30
40
50
60
TEMPERATURE (OC)
3-36
70
80
90
100
®
MOCtOOS
MOCt006
MOTOROLA
5000 VOLTS - HIGH ISOLATION COUPLER
Gallium Arsenide LED optically coupled to a Silicon Phototransistor designed for applications requiring high electrical isolation,
high transistor breakdown-voltage and low-leakage, small package
size and low cost; such as interfacing and coupling systems, logic to
power circuit interface, and solid-state relays.
•
High Isolation Voltage -VISO = 5000 V (Min)
•
High Collector-Emitter Breakdown Voltage V(BR)CEO = 80 V (Typ) @ IC = 1.0 mA
High Collector Output Current @ IF = 10 mAIC = 5.0 mA (Typ) - MOC1005
= 3.0 mA (Typ) - MOC1006
Economical, Compact, Dual-In-Line Plastic Package
•
•
MAXIMUM RATINGS ITA = 25°C unless otherwise noted).
Symbol
Rating
INFRARED-EMITTING DIODE MAXIMUM RATINGS
I
I
Reverse Voltage
Forward Current - Continuous
Forward Current - Peak
Pulse Width:: 300 J,tS, 2.0% Duty Cycle
Total Power Dissipation
@
T A = 25°C
Value
Unit
VR
IF
IF
3.0
80
3.0
Volts
rnA
Amp
PD
150
mW
Negligible Power in Transistor
Derate above 25°C
2.0
mWf'C
PHOTOTRANSISTOR MAXIMUM RATINGS
Voltage
VCEO
30
Volts
Emitter-Collector Voltage
VECO
VC80
PD
7.0
70
150
Volts
2.0
mWf'C
Cotlector~Emitter
COllector-Base Voltage
Total Power Dissipation @ T A = 2SoC
Negligible Power in Diode
Derate above 25°C
Volts
mW
TOTAL DEVICE RATINGS
PD
250
mW
mWf'C
TJ
T stg
3.3
-55 to +100
-55 to +150
260
Total Power Dissipation @ T A = 2SoC
Equal Power Dissipation in Each Element
Junction Temperature Range
Storage Temperature Range
Soldering Temperature (10 s)
°c
°c
vc
FIGURE 1 - MAXIMUM POWER DISSIPATION
~
140
i
120
r- I--
-
z
~ 100
C
lc-
TA= 2S
f-- ~
~150C
0
0
20
1\
\
.
00
80
TJl -TA
-
(j
S4
o
I
B
I
-----...L
'~
I
L A-1Ft-
mC
FlkJL=:l
~
N
K
--I G1= 1=0
I
= RaJA
NOTES:
1. OIMENSIONS A ANO BARE OATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEAOS:
1.loo.1310.oo5j@IT:.L~~
4. OIMENSION L TO CENTER OF LEAOS
WHEN FORM EO PARALLEl.
5. OIMENSIONING ANO TOLERANCING PER
ANSI YI4.5.
1973.
(PDI + Ka POZI
T A Ambient Temperature
ROJA Junction to Ambient Thermal
Resistance 15000 C/WI
\
POl Power Dissipation in One Chip
PD2 Power Oissipation in Other Chip
1\
_\
100
STYLE 1:
PIN 1. ANOOE
2. CATHOOE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
_J
rn---= _ _
where:
T J1 Junction Temperature I 100°C)
1
\
\
\
0
or-
Figure t is based upon using limit
values in the equation:
\
r--- r- ~oc
0
TRANSISTOR OUTPUT
J
M
Derate above 2S<>C
'00
OPTO
COUPLER/ISOLATOR
120
Pt)2.AVERAGE POWER DISSIPATION (mWI
140
Ke Thermal Coupling Coeffk:ient
160
(20%1
Example.
With POt = 90 mW in the LEO
@ T A '" SOOC, th~ transistor
Po 1P02)must be less than 50 mW.
3-37
CASE 730A·Ol
MOC100S, MOC1006
LED CHARACTERISTICS (TA; 25°C unless otherwise noted)
Symbol
Min
Typ
Ma.
Reverse Leakage Current (VR ; 3.0 V)
IR
0.005
100
~A
Forward Voltage (IF; 10 rnA)
VF
C
-
1.2
1.5
Volts
-
30
-
pF
50
nA
20
nA
Characteristic
Capacitance (VR - 0 V. f; 1.0 MHz)
PHOTOTRANSISTOR CHARACTERISTICS (TA; 25°C and IF; 0 unless otherwise noted)
Collector· Emitter Dark Current
3.5
ICEO
Unit
(VCE; 10 V. Base Open)
ICBO
-
Collector-Base Breakdown Voltage
(IC; 100 ~A. IE; 0)
V(BR)CBO
70
100
-
Volts
Collector-Emitter Breakdown Voltage
(lc; 1.0 rnA. IB; 0)
V(BR)CEO
30
BO
-
Volts
Emitter-Collector Breakdown Voltage
(IE; 100 ~A. IB; 0)
V(BR)ECO
7.0
-
-
Volts
hFE
-
250
-
2.0
1.0
5.0
3.0
-
5000
5000
-
Collector-Base Dark Current
(VCB; 10 V. Emitter Open)
•
DC Current Gain (VCE ; 5.0 V. IC - 500 ~A)
-
-
COUPLED CHARACTERISTICS (TA; 25°C unless otherwise noted)
Collector Output Current (1)
(VCE; 10V.IF; 10mA.IB;0)
MOC1005
MOC1006
IC
Isolation Surge Voltage. (1)
DC (2).
AC(3)
Vdc
VISO
Isolation Resistance (4) (V - 500 V)
Collector-Emitter Saturation (IC - 2.0 rnA ..IF - 50 rnA)
rnA
-
-
10000
10000
1011
VCE(sat)
-
0.2
0.5
-
Ohms
Volts
Isolation Capacitance (4) (V; O. f; 1.0 MHz)
-
-
1.3
-
pF
Bandwidth (5) (lC - 2.0 rnA. RL - 100 Ohms. Figure 11)
-
-
300
-
kHz
td
-
tr
-
0.07
'0.10
0.8
2.0
-
4.0
2.0
8.0
8.0
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(lc; 10 rnA. VCC; 10V)
Figures 6 and 8
MOC1005
MOC1006
MOC1005
MOC1006
(lc; lOrnA. VCC; 10V)
Figures 7 and 8
MOC1005
MOC1006
MOC1005
MOC1006
Storage Time
Fall Time
(1)
(2)
(3)
(4)
(5)
-
ts
tf
-
~s
~s
~s
-
~s
Pulse Test: Pulse Width = 300 1.1.5. Duty Cycle ~ 2.0%
Peak DC Voltage ~ 1.0 Minute
Nonrepetitive Peak AC Voltage - 1 Full Cycle. Sine Wave. 60 Hz
For this test LED pins 1 and 2 are common and Photo Transistor pins 4, 5 and 6 are common.
IF adjusted to yield Ie 2.0 rnA and ic 2.0 rnA pop at 10 kHz
=
=
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 3 - MOC1006
FIGURE 2 - MOC1005
100
100
0
50
VCE'1DV
0
,...
0
VCE'I OV
I
./
0
~TJ'-55·C
0
0
TJ·-55·C
0
r-..
25.C
0
V
0
1'--100·C
0
~25·C
5
5
O. 2
O. 2
0.1
0.5
1.0
2.0
5.0
10
20
50
100
IF. FORWARD DIODE CURRENT (mAl
200
D. 1
0.5
500
3-38
-
100·C
'/
/
1.0
2.0
5.0
10
20
50
100
IF. FORWARD DIODE CURRENT (mAl
200
500
MOC1005, MOC1006
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 5 - COLLECTOR SATURATION VOL TAGE
FIGURE 4 - FORWARD CHARACTERISTICS
1.0
.
2.2
co
"'"'
'"
~
Vi 2.0
~
>-
~~
IF,50lC
TJ' 25°C
"''''
t;~
w c
~~
::J>
z'"
~~
'-' ....
>;]j 0.2
I--
f-"
t-"
o
0.05
1.0 k
10
100
iF. INSTANTANEOUS FORWARD CURRENT (rnA)
-0.1
t,
2.0
w
..
>=
~
jOCt,G
10
200
~ccllO)===
IF-20IC~~
-
~ I-
1.0
-
20
50
FIGURE 7 - TURN-OFF TIME
0
7i-
)
~
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (rnA)
FIGURE 6 - TURN-ON TIME
0
5.0
I
MOC1005
0.4
0
..:..i=
/'
12
1.0
1.0
Z
C
u
1.6
~~
~
1.4
]
'IFi"2m'
"!w
o c( 0.6
g ~1.8
~ ~
IIII ~ I
o. 8
~ ~
JCC-~vl~
100
SO
TJ-25°C'==
.....
.........
20
~
w
10
>=
5.0
.
O. 5
'===
IF- 20 IC
Tr 25 °C
!f
-
':z ~
~.
0.2
~
td~
..... ...........
2.0
t/:::
, "< >- ....
1.0
O. I
0.05
0.5
MOCIOOS
MOCIOOG
0.02
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
0.2
0.5 0.7
so
30
1--
MOCIOOS
MOCIOOG
1.0
IC, COLLECTOR CURRENT (rnA)
2.0
3.0
5.0 7.0
10
20
30
50
IC, COLLECTOR CURRENT (rnA)
FIGURE 9 - DARK CURRENT
FIGURE 8 - SATURATED SWITCHING
TEST CIRCUIT
,.,su,
AMBIENT TEMPERATURE
10,000
+1OV
RO and RL VARltO TO OBTAIN DESIRED
CURRENT LEVELS.
~
1000
'"
100
;li
SCOPE
~
!::;{
----,
PHOTO
TRANSISTOR
I
I
I
I
_ _ _ -.1
.. .s
~~l 0
cw
.... '"
'-'",
w",
::lu1. 0
8
~
O. I
0.0 I
-75
-50
-25
+25
+50
TA, AMBIENTTEMPERATURE (DC)
3-39
+75
+100
•
MOC1005, MOC1006
FIGURE 11 - FREQUENCY RESPONSE TEST CIRCUIT
FIGURE 10 - FREQUENCY RESPONSE
0
O~TA'2&'C
1.0 IJF
0
......
5
3
~
"
N..
l"l
50
10
lOll
300
200
5011
'--....- - 0 OUTPUT
IF
IC lOCI- 2.0 mA
ic (AC SINE WAVe" 2.0 mA P,Pl
~
I
Vee" 10 VOLTS
L_~'
-
I-.
~ooil-
2
IC
....--
INPUT
I
~5~
~
~~~S::NNi
r----
Rl 'IOIIll_
1
•
41 !!
MO~~~~pON 0----)11--111.,...-1.
100
1000
I, FREQUENCY 1kHz)
FIGURE 13 -INTERFACE BETWEEN LOGIC AND LOAD
FIGURE 12 - POWER AMPLIFIER
AC
1
FIGURE 14 - UNIVERSAL CMOS LOGIC TRANSLATOR
FIGURE 1& - ISOLATED DC MOTOR CONTROLLER
(Programmable Constant Current Drive)
+5.0 -18 V
ID~IO[~1
15 V-18 V)
+VlOGIC
RII,
Uk
1M
,
100 k
J
----,
1 ID
MDCl005
MDCIOOS
TI --l
5
I
...J
~:
L
MOCl005, MOCl006
18A
50 k
s
2_~..J
Ik
GND
3·40
®
MOTOROLA
MOC3002
MOC3003
MOC3007
OPTO SCR COUPLER
OPTO.
COUPLER/ISOLATOR
These devices consist of a gallium-arsenide infrared emitting
diode optically coupled to a photo sensitive silicon controlled rectifier
(SCR). They are designed for applications requiring high electrical
isolation between low voltage circuitry, like integrated circuits, and
the ac line.
with
PHOTO SCR OUTPUT
250 and 200 VOLTS
•
• High Blocking Voltage
MOC3002, 3003 - 250 V for 110 Vac Lines
MOC3007
- 200 V for 110 Vac Lines
• Very High Isolation Voltage
VISO = 7500 V Min
• Standard 6-Pin DIP
• UL Recognized, File Number E54915
MAXIMUM RATINGS ITA' 25"C unless otherwise noted I
Rating
Symbol
Value
Unit
VR
7.0
Volts
IF
60
mA
PD
100
mW
INFRARED EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage
Forward Current -
ContInuous
Total Power Dissipation (Q) TA ':: 25°C
Negligible Power in TranSistor
Derate above 25°C
1.33
mW
C
OUTPUT DRIVER MAXIMUM RATINGS
VDM
250
200
Volts
ITiRMS)
300
rnA
ITSM
3.0
A
PD
400
5.33
mW
mW'oC
Visa
7500
Vac
Junction Temperature Range
TJ
-40 to +100
DC
Ambient Operating Temperature Range
TA
·55 to +100
DC
Storage Temperature Range
Tstg
-55 to +150
DC
Soldering Temperature (10 s)
_.
260
DC
Peak Forward Voltage
MOC3002,3
MOC3007
Forward RMS Current
(Full Cycle. 50 to 60 Hz) TA 0 25 DC
Peak Nonrepetitive Surge Current
(PW 010 rnS, de 010%)
Total Power Dissipation @ TA;;;: 25°C
CJ
54
O
I--
, J~LI
t
STYLE 7:
PIN 1. LEO ANOOE
2. LEO CATHOOE
3. NC
4. SCR CATHODE
5. SCR ANOOE
6. SCR GATE
B
I
--...l.
~
c
-" 5tt~~
~
~
Derate above 25° C
tL=:l
_
_
N
K
--1 G i.::
0
f
J
TOTAL DEVICE MAXIMUM RATINGS
Isolation Surge Voltage (1 )
M
(Peak ae Voltage, 60 Hz,
5 Second Duration)
(1) Isolation surge voltage. Visa. IS an internal deVice dielectriC breakdown rallng.
Anode
1
6
SCR Gate
Cathode
2
5
SCR Anode
NC
3
4
SCR Cathode
NOTES:
1. DIMENSIONS A AND B ARE DATUMS.
2. -T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEAOS:
klil\2lo.13(O.OO5)®IT I A®JB®I
4. DIMENStON L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
5. DIMENSIONING AND TOLERANCtNG PER
ANSI Y14.5, 1973.
DIM
A
B
C
D
F
G
J
K
L
M
N
P
MtLLlMETERS
MIN MAX
8.t3
8.89
6.tO
6.60
5.08
2.92
0.4t
0.51
1.02
1.78
2.54 BSC
.20
0.30
2.54
3.81
7.62 BSC
00
150
0.38
2.54
1.27
2.03
INCHES
MtN MAX
0.320 0.350
0.240 0.260
0.lt5 0.200
0.0t6 0.020
0.040 0.070
•
0.008
0.100
0.015
0.050
CASE 730A-01
3·41
0.100
0.080
MOC3002, MOC3003, MOC3007
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Symbol
Min
Typ
Max
Unit
Reverse Leakage Current
(VR = 3.0V)
IR
-
0.05
10
p.A
Forward Voltage
(IF= 10 mAl
VF
-
1.2
1.5
Volts
Capacitance
CJ
-
50
-
pF
Peak Off-State Voltage (10M = 50 p.A)
MOC3002. 3003
(RGK = 10 kil. TA = 100°C. 10M = 100 p.A) MOC3007
VOM
250
200
-
-
Volts
Peak Reverse Voltage (lAM = 50 p.A)
MOC3002. 3003
(AGK = 10 kil. TA = 100°C. lAM = 100 /lA) MOC3007
VAM
250
200
On-State Voltage
(ITM =0.3 A)
MOC3002. 3003
MOC3007
VTM
Off-State Current
(VOM = 250 V. AGK = 10 kll. TA = 100°C)
(VOM = 200 V. AGK = 10 kll. TA = 1000 q
MOC3002. 3003
MOC3007
Characteristic
LED CHARACTERISTICS
(V= O. f= 1.0 MHz)
•
DETECTOR CHARACTERISTICS
Reverse Current
(VRM = 250 V. RGK = 10 kll. TA = l000 q
(VAM = 200 V. AGK = 10 kIl. TA = 100°C)
10M
-
-
Volts
-
1.1
1.2
1.3
1.5
Volts
-
-
-
50
100
-
-
50
100
-
20
350
-
-
15
10
20
30
20
40
14
11
22
-
p.A
p.A
lAM
MOC3002. 3003
MOC3007
Capacitance (V = O. f = 1'.0 MHz)
Anode - Gate
Gate - Cathode
pF
CJ
COUPLED CHARACTERISTICS
LED Current Aequired to Trigger
(VAK = 50 V. AGK = 10 kll)
1FT
MOC3002
MOC3003
MOC3OO7
-
B.O
6.0
12
RISO
100
-
-
Gn
CISO
-
-
2.0
pF
Coupled dV/dt. Input to Output
(AGK = 10 k!l)
dv/dt
-
500
-
Volts/p.s
Isolation Surge Voltage
(Peak ac Voltage. 60 Hz. 5 Second Duration)
VISO
-
-
Vac
IVAK = 100V. RGK = 27 kill
MOC3002
MOC3003
MOC3007
rnA
-
Isolation Resistance
(VIO = 500 Vdc)
Capacitance Input to Output
(VIO = O. f= 1.0 MHz)
3-42
7500
MOC3002, MOC3003, MOC3007
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - ANODE CURRENT versus
ANODE·CATHODE VOLTAGE
FIGURE 1 - LED FORWARD VOLTAGE versus
FORWARD CURRENT
1000
500
TA; 25°C
<
.5
>-
z
f-----
!
H'
.
c
c
."
/'
1.2
1.0
1.0
~
£-
I---
200 f - f-100
/
/
•
TJ ; 25°e
20
10
5.0
r10
100
iF. INSTANTANEOUS FORWARD CURRENT {mAl
1.0 k
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VAK. ANODE·CATHODE VOLTAGE {VOLTSI
1.8
2.0
FIGURE 4 - FORWARD LEAKAGE CURRENT
versus TEMPERATURE
1.000
10
<
Normalized To:
VAK; 50 V
RGK; 10 kll
TA; 25°C
5.0
:l§
::>
u
.5
~
a:
::>
..
.
RGK;4.7kll-,
ffi 2.0
u
c
./
100
./
a:
'"
'"
<;,Il-.\
~
; 10 kn
~ 1.0
'/-.\~'l---'j;
~
c
~
c
; 27kll-
.
~ 0.5
~
~ 0.2
'":i;
."
E
0.1
-50
-25
0
25
50
TA. AMBIENT TEMPERATURE {OCI
75
./
10
::;;
a:
;56kll-
::E
~
TJ; 100 0 e
50
FIGURE 3 - LED TRIGGER CURRENT
versus TEMPEATURE
~
==
100
3-43
./
~<;,Il'l
-.\~'l-
./
1.0 . /
25
40
55
70
TA. AMBIENT TEMPERATURE {OCi
85
100
®
MOC3009
MOC3010
MOC3011
MOTOROLA
OPTICALLY ISOLATED TRIAC DRIVER
•
OPTO
COUPLER/ISOLATOR
These devices consist of a gallium-arsenide infrared emitting diode,
OPtically coupled to a silicon bilateral switch and are designed for
applications requiring isolated triac triggering, low-current isolated
ac switching, high electrical isolation (to 7500 V peak). high detector
standoff voltage, small size, and low cost_
•
•
•
PHOTO TRIAC DRIVER
OUTPUT
250 VOLTS
UL Recognized File Number 54915
Output Driver Designed for 115 Vac Line
Standard 6-Pin DIP
MAXIMUM RATINGS (TA = 25 0 C unless otherwise noted)
I
Rating
Svmbol
INFRARED EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage
Forward Current - Continuous
Total Power Dissipation @ T A = 2SoC
Negligible Power in Transistor
Derate above 25°C
OUTPUT DRIVER MAXIMUM RATINGS
Oll-State Output Terminal Voltage
On-State RMS Current
(Full Cvcle, 50 to 60 Hz)
TA = 25°C
TA = 700C
Peak Nonrepetitive Surge Current
(PW = 10 ms, DC
=
Value
Unit
3_0
50
lOO
Volts
mA
mW
1.33
mW/oC
250
100
50
Volts
mA
ITSM
1.2
A
Po
300
4.0
mW
mW/OC
VISO
7500
Vee
Po
330
4.4
-40 to +100
-40 to +70
-40 to +150
260
mW
mW/oC
VR
IF
Po
VORM
IT(RMS)
rnA
10%)
Total Power Dissipation @I TA = 25°C
Derate above 25°C
TOTAL DEVICE MAXIMUM RATINGS
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz,
5 Second Duration)
Total Power Dissipation @I T A = 2So C
Derate above 250C
Junction Temperature ~Range
Ambient Operating Temperature Range
Storage Temperature Range
Soldering Temperature (105)
TJ
TA
Tsto
-
a
O
I-.-
~
1
8
J.
STYLES:
PIN 1. ANOOE
2. CATHOOE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL
OC
Dc
Dc
Dc
(1) Isolation surge voltage, ViSa, is an internal device dielectric breakdown rating.
NOTES:
1. OIMENSIONS A AND 8 ARE DATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS:
I§I(lJo.13(0.0051®IT I
A®l8®1
4. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
5. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5, 1973.
6 Main Terminal
Anode 1
Cathode 2
3
Dr---.J
5 Triac Driver Substrate
DO NOT Connect
4 Main Terminal
3-44
MILLIMETERS
INCHES
MIN MAX
MIN MAX
B.13
8.89 0.320 0.350
6.10
6.60 0.240 0.260
2.92
5.0B 0.115 0.200
0.41
0.51
0.06 0.020
1.02
1.78 0.040 0.070
2.54 BsC
0.1008SC
D.20
0.30 10.008 0.012
2.54
3.81
0.100 0.150
7.628SC
0.300 BsC
00
150
00
ISO
0.38
2.54 0.015 0.100
P 1.27
2.03 0.050 0.080
CASE 730A-lIl
DIM
A
B
C
D
F
G
J
K
L
M
N
MOC3009, MOC3010 , MOC3011
ELECTRICAL CHARACTERISTICS ITA' 25 0 C unless otherwise noted I
I Symbol
Min
Typ
Max
Unit
IR
-
0.05
100
jJ.A
VF
-
1.2
1.5
Volts
Peak Blocking Current, Either Direction
IRated VORM. Note 11
IORM
-
10
100
nA
Peak On-State Voltage, Either 0 irection
(lTM = 100 mA Peakl
VTM
-
2.5
3.0
Volts
Critical Rate of Rise of Off-5tate Voltage, Figure 3
dvldt
-
2.0
-
VIjJ.s
Critical Rate of Rise of Commutation Voltage, Figure 3
(I load = 15 mAl
COUPLED CHARACTERISTICS
dvldt
-
0.15
-
VIjJ.s
15
8.0
5.0
30
15
mA
-
-
100
-
Characteristic
LED CHARACTER .STlCS
Reverse Leakage Current
=
IVR 3.0 VI
Forward Voltage
(IF 10mAI
=
DETECTOR CHARACTERISTICS (IF = 0 unless otherWise notedl
LEO Trigger Current, Current Required to Latch Output
MOC3009
MOC3010
MOC3011
IMain Terminal Voltage = 3.0 VI
1FT
Holding Current, Either Direction
IH
10
jJ.A
Note 1. Test voltage must be applied within dv/dt rating.
2. Additional information on the use of the MOC30091301013011
is available in Application Note AN-780.
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
FIGURE 1 - ON-STATE CHARACTERISTICS
+800
.......
".s.~
ottPullpulselwidl~ 801~s
FIGURE 2 - TRIGGER CURRENT versus TEMPERATURE
.,....- ~
=
IF'20mA
_ 1·60H,
+400
TA' 25'C
//
1.3
/
~
...
~1. 1
/
...'"
'-'
w
~
::;
/
~
z
o
:E -400
.t-800
./
1.5
V
""
~
V
r--- ........
0.9
r- r-
o
z
r-....
0.7
I-- V
-14 -12 -10 -8.0 -6.0 -4.0 -2.0
--
0
2.0 4.0 6.0
8.0
10
12
0.5
-40
14
-20
20
40
60
TA. AMBIENT TEMPERATURE lOCI
VTM. ON·STATE VOLTAGE (VOLTS)
3·45
-....... r--...
80
100
•
MOC3009 • MOC3010 • MOC3011
FIGURE 3 - dv/dt TEST CIRCUIT
FIGURE 4 - dv/dt versus LOAO RESISTANCE
,..------.6
VCCo---~~----~
•
2
2.4
~----~
MOC3009
MOC3010
MOC3011
Static
0.20
2.0
4
Vi. ~ 30 V RMS
6:-- Test Circuit in Figure 3
2
n n n n+
6V
L
o.B
JUUU~
I Com mutating
I Static I
I-- dv!dt ---t-=dv/dt~
/
FIGURE 5 - dv/dt venus TEMPERATURE
- - - Static dv/dt
- - - Commutating dv/dt
Circuit in Figure 3
rB
I-+RL~510!!
I
I
30
40
0.12
1'..;:
-- - -- r---I10
60
"'c::E
0.08
r- 1'-..
-I""'" tBO
90
1.2
O.B
RL. LOAD RESISTANCE (kill
;o
to
>
o
'"
Rl = 1 kn
100'~IIIIIII.
w
..c
~
It
[
:>
10 _ _ _
0.04
l.°l'~O--L'-'-.1..J..Uf.l0;;0..L.LJ-LJW;1~ODO.,-L..L.Ll-'-1;1!;!O.~OO;;;;O:U.....l..J...illUl
100
t. MAXIMUM OPERATING FREQUENCY (Hz)
FIGURE 7 - MAXIMUM NON REPETITIVE SURGE CURRENT
3.0
:;';
>-
~
'"G 2.0
_
I IIIIII
TA~25'C
IF~20mA
---
w
~
~
..'" 1.0
-
r-
r-_
~
r-
~
1:"
o
0.01
0.1
2.0
t-:H::j::j::j~~:qH+mm:+t dv/dt - 8,9 ViR f
TA. AMBIENT TEMPERATURE ('CI
"Ie
,.
1.6
::;
Z
t'---
'"
~
...
Test Circuit in Figure 3
'"
;:
50
0.08
dv/d' ~ 0.15 VI".
0.16!
~
I
iii
v, . 1000~!~~II~IIII~r~~~~~~Hrnl
~
:-
~2k;;-
o. 4
0
25
.20
0
I'
RL
2
E
FIGURE 6 - COMMUTATING dV/dt venus FREQUENCV
0.24
I-
c:
0.12
0.04
0.4
24
i'.
I---
r-
o.4
dv/dt ... 8.9 f Vin
2.0
--
Commutating~
~
~a
-.
0.16
1.0
PII. PULSE WIDTH (m.1
3·46
10
100
MOC3009 , MOC301 0 , MOC3011
TYPICAL APPLICATION CIRCUITS
FIGURE 8 - RESISTIVE LOAD
6
MOC3010
II
180
120 V
60 Hz
MOC3009
--0
MOC3011
4
FIGURE 9 - INDUCTIVE LOAD WITH SENSITIVE GATE TRIAC
"GT';; 15mA)
Ron
6
180
2.4 k
MOC3009
120 V
60 Hz
MOC3010
O.l/J. F
MQC3011
Cl
4
FIGURE 10-INDUCTIVE LOAD WITH NON-SENSITIVE GATE TRIAC
(15 mA
< IGT < 50 mAl
6
180
1.2 k
0.2
MOC3010
MOC3011
120 V
60 Hz
MOC3009
4
3-47
~F
C1
®
MOC3020
MOC3021
MOTOROL.A
OPTICALLY ISOLATED TRIAC DRIVER
These devices consist of a gallium-arsenide infrared emitting
diode, optically coupled to a silicon bilateral switch. They are.
designed for applications requiring isolated triac triggering.
•
UL Recognized File Number E54915
OPTO COUPLER
PHOTO TRIAC DRIVER
OUTPUT
• Output Driver Designed for 220 Vac Line
.400 VOLTS
• VISO Isolation Voltage of 7500 V Peak
•
• Standard 6·Pin Plastic DIP
MAXIMUM RATINGS'(TA = 2SOC unless otherwise noted)
I
Rating
Svmbol
INFRARED EMITTING DIODE MAXIMUM RATINGS
Value
Unit
Reverse Voltage
VR
3.0
Volts
Forward Current - Continuous
IF
50
mA
Total Power Dissipation @ T A = 2SoC
Negligible Power in Triac Driver
Derate above 25°C
Po
100
mW
1.33
mW/oC
VDRM
400
Volts
'T(RMS)
100
mA
50
rnA
'TSM
1.2
A
Po
300
4.0
mW
mW/oC
V,SO
7500
Vae
Po
330
4.4
mW
mW/oC
OUTPUT DRIVER MAXIMUM RATINGS
OllState Output Terminal Voltage
OnState RMS Current
(Full Cvele, 50 to 60 Hz)
TA = 25°C
TA = 700C
Peak Nonrepetitive Surge Current
(PW = 10 ms, DC = 10%)
Total Power Dissipation @ T A = 2SoC
Derate above 2sDc
TOTAL DEVICE MAXIMUM RATINGS
Isolation Surge Voltage (1)
(Peak 8C Voltage, 60 Hz,
5 Second Duration)
Total Power Dissipation
Derate above 2SoC
@
T A = 25°C
Junction Temperature 'Range
TJ
-40 to +100
Dc
Ambient Operating Temperature Range
TA
-40 to +70
Storage Temperature Range
T st•
-40 to +150
°c
Dc
-
260
°c
SolderingTemperaturo 110 s)
(1) Isolation surge voltage, V ISO. is an internal device dielectric breakdown rating.
a
s
ST~,~E 6,'.
I
O
ANOOE
2. CATHOOE
I
~
!: ~~'N
TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL
-...l
~~
suc
FlC_L:l
~
-"
~
__
N
K
:=o-r
--I G ~
NOTES,
1. OIMENSIONS A ANO BARE OATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS,
1§ilili.13(O.005!®i T i A@lB®i
4. DIMENSION L TO CENTER OF LEADS
WHEN FORMEO PARALLEL.
5. DIMENSIONING ANO TOLERANCING PER
ANSI Y14.5, 1913.
Anode 1
,---1.....J 6 Main Terminal
MILLIMETERS
DIM
A
B
C
5 Triac Driver Substrate
Cathode 2
DO NOT Connect
o
F
G
J
3
4 Main Terminal
K
L
M
N
P
MIN
MAX
B.13
6.10
2.92
0.41
1.02
2.54
0.20
2.54
7.62
00
0.38
1.27
B.B9
6.60
5.08
.51
1.78
BSC
0.30
3.81
Bse
15D
2.54
2.03
CASE 730A·Dl
3-48
J
MOC3020, MOC3021
ELECTRICAL CHARACTERISTICS ITA" 250 C unless otherwise notedl
Characteristic
LED CHARACTERISTICS
Reverse Leakage Current
(VR = 3.0 VI
IR
0.05
100
"A
Forward Voltage
('E= 10 mAl
VF
1.2
1.5
Volts
DETECTOR CHARACTERISTICS (IF " 0 unless otherWise notedl
Peak Blocking Current, Either Direction
IORM
-
10
100
nA
(Rated VORM. Note II
Peak. On-State Voltage, Either Direction
(lTM = 100 mA Peakl
VTM
-
2.5
3.0
Volts
Critical Rate of Rise of Off·State Voltage. TA - B50 C
dv/dt
10.0
-
VII'S
COUPLED CHARACTERISTICS
LED Trigger Current, Current Required to Latch Output
IMain Terminal Voltage' 3.0 V. Not. 21
mA
1FT
MOC3020
MOC3021
Holding Current, either Direction
--
IH
15
B.O
30
15
100
-
p.A
Note 1. Test voltage must be applied within dvldt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max 1FT· Therefore. recommended operating IF lies
between max 1FT (30 mA for MOC3020. 15 mA for MOC3021 I and absolute max IF (50 mAl.
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 2SoC
FIGURE 1 - ON-STATE CHARACTERISTICS
..
+800
/
I:l 1.3
/
c
g +400
V
!Z
...~
-800
I
1. 1
~
I
/
/
/V
-3.0
1.2
i
/'"
~
~-400
~_
~
,//
~
FIGURE 2 - TRIGGER CURRENT versus TEMPERATURE
1.4
;
.......
""
........
........
-1.0
0
1.0
2.0
3.0
........
0.9
0.8
.......
-
-
I-- I--
0.7
0.6
-2.0
.........
1.0
-40
VTM. ON·STATE VOLTAGE (VOLTSI
o
-20
20
40
60
80
100
TA. AMBIENT TEMPERATURE (OCI
FIGURE 3 - TYPICAL APPLICATION CIRCUIT
Rin
6
360
Hot
470
In this circuillhe "hot" side olthe line is switched and the
load connected to the cold or ground side.
VCC
MOC
30201
3021
5
The 39 ohm resistor and 0.01 p.F capacitor are for snubbing of the triac. and the 470 ohm resistor and 0.05 "F
capacitor are for snubbing the coupler. These components
mayor may not be necessary depending upon the particular
triac and load used.
0.05p.F
4
Additional information on the use of optically coupled triac
drivers is available in Application Note AN-7BOA.
3-49
®
MOC3030
MOC3031
MOTOROLA
OPTO
COUPLER/ISOLATOR
ZERO VOLTAGE CROSSING
OPTICALLY ISOLATED TRIAC DRIVER
•
ZERO CROSSING
TRIAC DRIVER
260 VOLTS
This device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon detector performing the
function of a Zero Voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of logic systems
to equipment powered from 115 Vac lines, such as teletypewriters,
CRTs, printers, motors, solenoids and consumer appliances, etc.
•
Simplifies Logic Control of 110 Vac Power
•
Zero Voltage Crossing
•
High Breakdown Voltage: V DRM
•
High Isolation Voltage: V ISO = 7500 V Min
•
Small, Economical, 6·Pin DIP Package
•
Same Pin Configuration as MOC301 0/3011
•
UL Recognized, File No. E54915
•
= 250 V Min
CJ'B:J
s
o
fij;IOOI3(000~®IT
1A®!i®l
14 DIMENSION l TO CENTER OF lEADS
I
I A~FIl---
dv/dt of 100 V//J.s Typ
NOTES·
1 DIMENSIONS A AND B ARE DATUMS
T IS SEATING PLANE
B 3 POSITIONAL TOLERANCES FDA LEADS:
12
WHEN FORMED PARAllEl.
5. DIMENSIONING AND TOlERANCING PER
ANSI Y14.5, 1973.
- sttFl'rc
m
C
EB.: __
IL=:]
N
K
--IGI.:: ~
MAXIMUM RATINGS ITA = 250C unle.. otherwise noted)
I
Symbol
Rating
INFRARED EMITTING DIODE MAXIMUM RATINGS
I
I
Valu.
Reverso Voltage
VR
3.0
Volts
Forward Current - Continuous
IF
50
mA
Total Power 0 issipation @ T A = 25°C
Po
120
mW
1.33
mW/oC
Negligible Power in Output Driver
Derate above 25°C
MILLIMETERS
DIM
MIN
MAX
A
•
8.13
6.10
2.92
8.89
6.60
5.0B
D
0.41
0.51
F
G
1.02
2.54
0.20
2.54
e
OUTPUT DRIVER MAXIMUM RATINGS
J
OII-8tato Output Terminal Voltage
K
On-8tate RMS Current
IFull Cycle, 50 to 60 Hz)
TA = 25°C
TA = 85°C
Peak Nonrepetitive Surge Current
IPW= 10ms)
Total Power Di..ipation @ T A = 25°C
Derate above 25°C
J
Unit
VDRM
250
Volts
ITIRMS)
100
mA
50
mA
ITSM
1.2
A
Po
300
4.0
mW
mW/Dc
7600
Vac
l
M
N
P
STYlE 6:
PIN 1. ANODE
2. CATHOOE
1.78
BSe
0.30
3.81
7.62 BSC
00
150
0.3B
2.541.27
2.03
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL
CASE 130A·Dl
COUPLER SCHEMATIC
TOTAL DEVICE MAXIMUM RATINGS
Isolation Surge Voltage II)
IPeak ac Voltage, 60 Hz,
5 Second Duration)
VISO
Anode
Po
330
4.4
mW
mW/oC
Junction Temperature :Range
TJ
-40 to +100
Dc
Ambient OperatinG Temperature Aange
TA
-40 to + 85
Dc
Tst.
-40 to +150
Dc
Total Power Dissipation @ T A = 25°C
Derate above 25Dc
Storage Temperature Range
260
Visa. is an internal device dielectric breakdown rating.
Solderin. Temperatur. lID s)
(1) Isolation surge voltage,
3-50
Cathoda
,-----.--t...J
Main
Terminal
Substrate
DO NOT
Connect
Dc
NC
MOC3030
MOC3031
ELECTRICAL CHARACTERISTICS (TA = 2SoC unless otherwise noted)
I Symbol
Characteristic
Min
Typ
Max
Unit
IR
-
0.05
100
I'A
VF
-
1.3
1.5
Volts
lOAM
-
10
100
nA
VTM
-
1.8
3.0
Volts
dv/dt
-
100
-
VII'S
LED CHARACTERISTICS
Reverse Leakage Current
(VA = 3.0 V)
Forward Voltage
(IF=30mA)
DETECTOR CHARACTERISTICS (I F = 0 unless otherwise noted)
Peak Blocking Current, Either Direction
(Aated VOAM, Note 1)
Peak On-State Voltage, Either Direction
(lTM = 100 mA Peak)
Critical Rate of Rise of Off-5t8te Voltage
COUPLED CHARACTERISTICS
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3.0 V, Note 21
mA
1FT
-
Holding Current, Either Direction
-
-
-
30
15
IH
-
100
-
I'A
V IH
-
15
25
Volts
IR
-
100
200
I'A
MOC3030
MOC3031
ZERO CROSSING CHARACTERISTICS
Inhibit Voltage
(I F
= Rated 1FT , MT1·MT2 Voltage above which device will not
trigger.)
Leakage in Inhibited State
(I F = Aated I FT' Rated V ORM' Off State)
Note 1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I F value less than or equal to max I FT' Therefore, recommended operating I Flies
between max 1FT (30 mA for MQC3030, 15 rnA for MQC3031J and absolute max IF (50 mA)'
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
FIGURE 1 - ON-STATE CHARACTERISTICS
+800
"~
=
=
+600
Output Pulsewidth - 80,us
IF"30mA
I " 60 Hz
TA'" 25°C
V
+400
~
:::
./
-400
-600
-800
;t
1.0
~
0.9
.........
.......
I'-...
....... r-....
r- t-- ....
0.8
/
/
-4.0
.......
0
/
"'
r-...
1.1
./
~ -200
.......
1.1
/
+200
~
J
1.3
/
~
0.
FIGURE 2 - TRIGGER CURRENT versus TEMPERATURE
0.7
-3.0
-1.0
-1.0
1.0
1.0
3.0
4.0
-40
VTM , ON-STATE VOLTAGE (VOLTSI
-10
10
40
60
TA' AMBIENT TEMPERATURE (DC I
3·51
80
100
•
MOC3030, MOC3031
FIGURE 3 - HOT·LlNE SWITCHING APPLICATION CIRCUIT
6
51
Typical circuit for use when hot line switching is required.
In this circuit the "hot" side of the line is switched and
the load connected to the cold or neutral side. The load
may be connected to either the neutral or hot line .
Rin is calculated so that I F is equal to the rated I FT of
the part, 15 mA for the MOC3031 or 30 mA for the
MOC3030. The 39 ohm resistor and 0.01 JlF capacitor
are for snubbing of the triac and mayor may not be
necessary depending upon the particular triac and load
used ..
Hot
•
FIGURE 4 - INVERSE·PARALLEL SCR ORIVER CIRCUIT
115 Vae
Vce
Suggested method of firing two, back·to·back SCR's,
with a Motorola triac driver. Diodes can be 1N4001;
resistors, R 1 and R2, are optional 1 k ohm.
When operating in environments subject to high·line transients.
it is suggested that an appropriate transient suppressor be used.
3·52
®
MOCS003
MOCSOO,4
MOTOROLA
DIGITAL LOGIC COUPLER
OPTO
COUPLER/ISOLATOR
'" gallium arsenide IRED optically coupled to a high·speed
integrated detector. Designed for applications requiring electrical
isolation, fast response time, and digital logic compatibility such as
interfacing computer terminals to peripheral equipment, digital con·
trol of power supplies, motors and other servo machine applications.
Intended for use as a digital inverter, the application of a current
to the IRED input results in a LOW voltage; with the IRED off the
output voltage is HIGH.
• High Isolation Voltage VISO; 7500 V (Min)
•
Fast Switching Times@ IF;
ton
1200 ns (Typ) 720 ns (Typ) toff
1200 ns (Typ) 720 ns (Typ) -
16 mA, VCC; 5.0 V
MOC5003
MOC5004
MOC5003
MOC5004
•
Economical, Compact, Dual·ln-Line Plastic Package
•
Built-In Hysteresis (Figure 2)
•
UL Recognized, File No. E54915
MAXIMUM RATINGS (TA
I
HIGH-SPEED
DIGITAL OUTPUT
STYLE 5:
PIN 1. ANODE
2. CATHODE
3. NC
4. OUTPUT
5. GROUND
6. VCC
= 25°C unless otherwise noted)
I Symbol
Rating
Value
Unit
VR
6.0
Volts
IF
50
3.0
mA
Amp
PD
100
mW
2.0
mW/oC
Volts
INFRARED-EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage
Forward Current
Continuous
Peak
Pulse Width = 300 I'S, 2.0% Duty Cycle
Device Dissipation
@
TA
= 25°C
Negligible Power in Ie
Derate above 2SoC
OUTPUT GATE MAXIMUM RATINGS
Supply Voltage
Supply Current
VCC
7.0
= 5.0 V
ICC
15
mA
T A = 2S o C
PD
200
mW
V CC
@
Device Dissipation
@
Negligible Power in Diode
TOTAL DEVICE RATINGS
Total Device Dissipation
TA
25°C
PD
200
mW
Operating Temperature Range
TA
-4010 +70
°c
Storage Temperature Range
T stg
-55 to +100
°c
260
°c
@
=
Soldering Temperature (10 s)
FIGURE 1- COUPLER SCHEMATIC
Anode 1
6
Vee
NOTES:
1. OIMENSIONS A ANO 8 ARE DATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS:
r~[Q:0"13_~005J®tT
4.
L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
5. DIMENSIONING AND TOlERANCING PER
ANSI Y14.5, 1973.
DIM
A
8
C
o
F
G
J
·K
Cathode 2
5 Gnd
l
M
N
MIN
MAX
8.13
8.89
S.10
6.60
2.92
5.08
0.41
0.51
1.02
1.78
2.54 8SC
0.20
0.30
2.54
3.81
7.628SC
00
0.38
P '1.27
NC 3
t A®tB®t
DI~ENSION
150
2.54
2.03
4 Output
CASE 7JOA·Ol
3-53
•
MOC5003, MOC5004
Characteri~tic
IRED CHARACTERISTICS
Reverse Leakage Current (VR
(TA
= 25°C
Forward Voltage (I F :: lOrnA)
Capacitance (VR
=0 V. f = 1.0 MHz'
•
5
VI (1)
Isolation Capacitance (V :: 0, f = 1.0 MHz) (1)
DEVICE CHARACTER ISTICS
Supply Current IIF
0.05
10
"A
1.2
1.5
Volts
C
-
100
-
pF
VISO
7500
-
-
Volts
-
-
1011
Ohms
-
1.3
-
mA
Un.it
pF
ITA = 25°C)
= O. VCC = 5.0 V)
'CC(off)
1.5
2.5
3.5
ICClon)
2.5
4.0
B.O
mA
VOL
-
0.35
0.6
Volts
VOH
4.0
4.75
-
Volts
ton
-
1200
720
2000
1200
ns
250
250
-
ns
1200
720
2000
1200
ns
-
ns
Supply Current (IF - 16 mAo VCC - 5.0 V)
= 5.0 V, ISink = 10 mAl
Output Voltage Low (IF - 16 mAo VCC
Output Voltage High (IF
'R
Max
= 250 C)
(TA
Isolation Voltage (1) 60 Hz, AC Peak, 5
= 500
Typ
VF
ISOLATION CHARACTERISTICS
Isolation Resistance (V
Min
unless otherwise noted)
6.0 V)
=
I·
Symbol
=0 mAo VCC -
5.0 V, ISource
= 200l'Al
SWITCHING CHARACTERISTICS
Turn-On Time
IIF
= 16 mAo VCC = 5.0 V.
Figure 3)
Fall Time
Turn-Off Time
IIF
= 16 rnA.
VCC
= 5.0 V.
Figure 3)
Rise Time
MOC5003
MOC5004
MOC5003
MOC5004
MOC5003
MOC5004
MOC5003
MOC5004
tf
toff
-
tr
-
250
250
-
-
(1) For this test IRED pins 1 and 2 are common and Output Gate pins 4, 5, 6 are common.
FIGURE 2 - TYPICAL OUTPUT VOL TAGE
versus DIODE CURRENT
100
vice =' 5.0
FIGURE 3 - TEST CIRCUIT
J
t-o----.....- - - < J Vee = + 5
9G
~
6
A = 400
80
w
70
.g r-
> 60
]1-
"::;
"
0
...
=>
~
=>
~
~ 50
0
I-o--~r--+-,--o Gnd
0
I
:=.
~
0
:~: Probe Cap
I
I
"'= 16 pF
0
w
N
::0
40
"~
~ 30
6
>
20
'F
See Figure 3
10
0
0
2.0
6.0
10
n
14
18
t,
'F. DIODE CURRENT (rnA)
3-54
V
®
MOCS010
MOTOROLA
OPTICALLY ISOLATED AC LINEAR COUPLER
OPTO
COUPLER/ISOLATOR
... gallium arsenide IRED opticallY'coupled to a bipolar monolithic
amplifier. Converts an input current variation to an output voltage
variation while providing a high degree of electrical isolation between
input and output. Can be used for line coupling, peripheral equip·
ment isolation, audio, medical, and other applications.
AC LINEAR AMPLIFIER
•
250 kHz Bandwidth
•
Low Impedance Emitter Follower Output: Zo
= 7500 V
•
High Voltage Isolation: VISO
•
UL Recognized, File Number E54915
•
< 200 n
(Min)
MAXIMUM RATINGS ITA = 25°C unless otherwise notedl
Rating
Symbol
Value
Unit
VR
3.0
Volts
IF
50
rnA
Po
100
rnW
O
2.0
mWloC
~~
VCC
15
Volts
ICC
13
200
rnA
INFRARED EMITTING DIODE
Reverse Voltage
Forward Current - Peak
Pulse Width =: 300 J.i.S, 20% Duty Cycle
Device Dissipation
@
TA = 25°C
Negligible Power in
Ie
Derate above 25°C
S
1
4
()
B
---.t
BVCC
AC AMPLIFIER
Supply Voltage
Supply Current @
Vee -
12 V
Po
Device Dissipation @ T A = 25°C
mW
Negligible Power in Diode
Device Dissipation @ T
1rc
-~
§ttl
~
__
N
K
-I G I:II-=o!
'" 2SoC
Maximum Operating Temperature
Fl
C iL=:]
~
TOTAL DEVICE
STYlE 5:
PIN 1. ANOOE
2. CATHOOE
3. NC
4. OUTPUT
5. GROUNO
J
M
Storage Temperature Range
NOTES:
1. OIMENSIONS A ANO BARE OATUMS.
2.·T IS SEATiNG PLANE.
3. POSITIONAL TOLERANCES fOR LEAOS:
FIGURE 1 - COUPLER SCHEMATIC
1~10013t0005i@TTJ~
4. DIMENSION L TO CENTER Of LEADS
WHEN fORMED PARALLEL.
5. DIMENSIONING AND TOLERANCING PER
ANSI YI4.5, 1973.
r----~.----+_O
6 Vee
MILLIMETERS
INCHES
J)!~ ~lr~~f O~~-~5r
jj
5 Gnd
~
f
nO
-6~60
0240.
l~~
1.02
1.78
0.040
0.070
m ~.~~ -H1H~~
l'-'o:i&~~ o:o%al~-
2k
' - - - + - 0 4 Output
K
L
2.54
3.81
7.B2 asc
1~~_L1.56
~_!J54
-"-'- 1.27
I
2~3
0.100 0.150
0.300 BSC
00 I~
0.015 0.100
0.050~
CASE 730A·01
3-55
MOC6010
Characteristic
IRED CHARACTERISTICS (TA = 25°C unless otherwise notedl
Reverse Leakage Current (VR
= 3.0 V. R = 1.0 M!l)
Forward Voltage (IF = 10 mAl
Capacitance (VA = 0 V, f· 1.0 MHzl
ISOLATION CHARACTERISTICS (TA • 25 0 CI
Iso.lation Voltage (1) 60 Hz, AC Peak
Isolation Aesistance (V • 500 VI (11
= 0, f = 1.0 MHzl
Isolation Capacitance (V
•
DEVICE CHARACTERISTICS
(11
(T A • 250 CI
Supply Current (IF· 0, VCC - 12 VI
Transfer Resistance - Gain
Isig· 1.0 mA P'P, IBias
= 12 mA
Output Voltage Swing - Single Ended
ICC
2.0
6.0
(VCC - 6.0 VI
(VCC = 12 VI
GA
100
100
200
(Vce· 12 VI
Vo
THO
-
4.0
t
-
1.4
p
BW
100
Vo
0.2
Single·Ended Distortion (21
Step Response
DC Power Consumption
(Vee = 6.0 VI
(Vee=12VI
Bandwidth
De Output Voltage (I LED
= 01, VeE· 12 V
10
mA
-
mV/mA
-
Volts
See Figure 2
-
~s
mW
250
-
1.0
6.0
Volts
30
72
kHz
(1) For this test IRED pins 1 and 2 are common and Output Gate pins 4, 5, 6 are common.
(~I
Aecommended IF
= 10 to 15 mA at Vce· 12 V.
FIGURE 2 - TYPICAL TOTAL HARMONIC DISTORTION
FIGURE 3 - NORMALIZED FREQUENCY RESPONSE
lD
5.0
~
z
!: 4.0
~~F
F~ectrum
1Analyzer
MOC5010
I
':" 2.2 kn
/
to
g
~ 3.0
Z
~
«
'"
:r
o. 1
~
"
,/
'"oz
I\.
0.0 1
V
1.0
"
'"
III
V
to
~ 2.0
1.0
z
;(
"\.
i'\.
i--""
,..-
0.001
4.0
8.0
12
l~gn.1
16
20
24
100
1.0k
p.p (mAl
10k
Typical total harmonic: distortion@l250 C(for
units with gain of 200 mVimA at tBias = 12 rnA.
VCC = 12 V, f = 50 kHz,Load = lSealn"rtll.
FIGURE 4 - TELEPHONE COUPLER APPLICATION
Vee· +12V
Line
lOOk
1.0M
FREQUENCY (Hzl
~:in~
~
~"7
~
V
3-56
1.0 "F
E---o V out
2.0M
\
10M
®
MOTOROLA
MOC8020
MOC8021
HIGH CTR DARLINGTON COUPLER
Gallium Arsenide LED optically coupled to a Silicon Photo
Darlington Transistor designed for applications requiring electrical
isolation, high breakdown voltage, and high current transfer ratios.
Provides excellent performance in interfacing and coupling
systems, phase and feedback controls, solid state relays, and
general purpose switching circuits.
•
High Transfer Ratio
500% - MOC8020
1000% - MOC8021
•
High Collector-Emitter Breakdown Voltage V(BR)CEO = 50 Vdc (Min)
•
High Isolation Voltage VISO = 7500 Vac Peak
•
UL Recognized, File No. E54915
•
Economical Dual-In-Line Package
•
Base Not Connected
MAXIMUM RATINGS IT A
OPTO
COUPLER/ISOLATOR
DARLINGTON OUTPUT
•
= 25°C unless otherwise noted.)
Rating
ISymbol I
Value
Unit
VR
3.0
Volts
INFRARED-EMITTING DIOOE
Reverse Voltage
CJ
54
Forward Current - Continuous
IF
50
mA
Forward Current - Peak
Pulse Width = 3001's, 2.0% Duty Cycle
IF
3.0
Amp
Total Power Dissipation @ T A == 2SvC
PD
150
mW
o
I
I
B
STYLE 3:
PIN 1. ANOOE
~
:J~I-I
~A~
Negligible Power in Transistor
Dera,. above 2SOC
2.0
~. ~~THODE
4. EMITTER
5. COLLECTOR
~ ~
mW/oC
PHOTO DARLINGTON TRANSISTOR
Voltage
VCEO
50
Volts
EmitterMColiector Voltage
VECO
5.0
Volts
Collector Current - Continuous
IC
150
mA
Total Power Dissipation @ T A == 25u C
PD
150
mW
2.0
mW/oC
PD
250
mW
3.3
mW/oC
TJ
-55 to +100
C
Tot.
-55 to +150
-
260
uc
uc
Collector~Emitter
Negligible Power in Diode
Derate above 2~C
TOTAL DEVICE
Total Device Dissipation @ T A = 25°C
Equal Power Dissipation in Each Element
Dera,. above 2SOC
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature (105)
NOTES:
1. DIMENSIONS A AND B ARE DATUMS.
1.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES fOR LEADS:
r~[(2)~1UO:.0051@IT IA@IB®I
4. DIMENSION L TO CENTER Of LEADS
WHEN FORMED PARALLEL.
5. DIMENSIONING AND TOLERANCING PER
ANSI YI4.S, 1973.
FIGURE 1 - DEVICE SCHEMATIC
MILLIMETERS
'Mm ·M~A'iCX+.~;,+
8.13 - S.B9
6.60
nO
CASE 7JOA·Ol
3-57
MOC8020, MOC8021
LED CHARACTERISTICS IT A ~ 250 C unl..s otherwise noted.)
Charact..istic
Symbol
Min
Typ
Max
Unit
IR
-
0.005
10
#JA
Forward Voltage
OF = lOrnA)
VF
-
1.2
2.0
Volts
Capacitance
IVR = 0 V, f = 1.0 MHz)
C
-
100
-
pF
Reverse Leakage Current
IVR =3.0 V)
PHOTO DARLINGTON CHARACTERISTICS ITA = 250 C and IF = 0, unless otherwIse noted,)
Charactwistic
Symbol
Min
Typ
Max
ICEO
-
8.0
100
Collector-Emitter Breakdown Voltage
IIC = 1.0 rnA)
VIBR)CEO
50
60
-
Volts
Emitter·Coliector Breakdown Voltage
OE = 100 "A)
VIBR)ECO
5.0
S.O
-
Volts
Symbol
Min
Typ
Max
50
90
150
-
Collector-Emitter Dark Current
(VCE= 10V)
•
Unit
nA
COUPLED CHARACTERISTICS IT A = 250 C unl..s otherwise noted )
Charac:t.istic
Collector 0 utput Current
(VCE = 5.0 V, IF = 10 mAl
Unit
rnA
IC
MOC8020
MOCS021
100
-
-
Volts
Isolation Resistance (1)
IV=500V)
-
-
1011
-
Ohms
Isolation Capacitance (1)
IV=0,f=1.0MHz)
-
-
O.S
-
pF
Isolation Surge Voltage (1,2), Vac 60 Hz Peak ac, 5 Second
7500
VISQ
SWITCHING CHARACTERISTICS
Turn·On Time (IF = 10 rnA, VCE = 50 V, R2 = 100 n)
Turn·Off Time (I F = 10 rnA, VCE = 50 V, R2 - 1000)
(1) For this test LED pins' and 2 are common and Photo Darlington pins 4 and 5 are common.
(2) Isolation Surge Voltage, VISQ. is an internal device dielectric breakdown rating.
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 3 - COLLECTOR CURRENT versus
COLLECTOR·EMITTER VOL TAGE IMOC8020)
FIGURE 2 - FORWARD CHARACTERISTICS
100
IF" lSmA
0
---
I
I
0
0
0
lOrnA _
0
V
0
/"
1.2
1.0
1.0
-
...
1'f
0
!--
Jj,
0
0
10
i.OmA-
0
100
1.Ok
iF. INSTANTANEOUS FORWARD CURRENT (mA)
2.0 rnA
W V
0.2
0.4
0.6
O.B
1.0
1.2
1.4
1.6
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3-58
1.B
2.0
®
MOC8030
MOC80S0
MOTOROLA
SO-VOLT DARLINGTON COUPLER
Gallium Arsenide LED optically coupled to a Silicon Photo
Darlington Transistor designed for applications requiring electrical
isolation, high breakdown voltage, and high current transfer ratios.
Characterized for use as telephony relay drivers but provides excellent
performance in interfacing and coupl ing systems, phase and feedback
controls, solid state relays, and general purpose switching circuits.
DARLINGTON OUTPUT
= 50 mA .-
•
High Transfer Ratio @ Output
300% - MOC8030
500% - MOC8050
•
High Collector· Emitter Breakdown Voltage V(BR)CEO = 80 Vdc (Min)
High Isolation Voltage V,SO = 7500 Vac Peak
•
OPTO
COUPLER/ISOLATOR
•
Excellent Stability Over Temperature
•
Economical Dual·ln·Line Package
•
Base Not Connected
•
MAXIMUM RATINGS ITA" 25°C unless otherwise noted.)
I
Rating
Symbol
I
Value
Unit
Volts
INFRARED·EMITTING DIODE
Reverse Voltage
VR
3.0
Forward Current - Continuous
'F
80
rnA
Forward Current - Peak
'F
3.0
Amp
Po
150
mW
2.0
mWI"C
Pulse Width" 300 MS, 2.0% Duty Cycle
Total Power Dissipation @ T A - 25 C
Negligible Power in Transistor
Derate above 2SoC
PHOTO DARLINGTON TRANSISTOR
Collector-E mitter Voltage
VCEO
80
Volts
Emitter-COllector Voltage
Veco
5.0
Vol~
'C
Po
150
rnA
150
mW
2.0
mW/oC
Collector Current -- Continuous
Total Power Dissipation
@ TA -
25u C
Negligible Power in Diode
Derate above 2SoC
TOTAL DEVICE
@ T A ~ 25°C
Equal Power Dissipation in Each Element
Po
Total Device Dissipation
Derate above 2SoC
250
mW
3.3
mW/oC
Operating Junction Temperature Range
TJ
-55 to +100
uc
Storage Temperature Range
T stg
-55 to +150
°c
-
260
°c
Soldering Temperature (1051
FIGURE 1 - DEVICE SCHEMATIC
f3l
f2l
DIM
A
8
I
"
I
~
?J
~
@t"[S5lli(0.005)®IT I A®lB®1
4. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
5. OIMENSIONING AND TOLERANCING PER
ANSI Y14.5, 1973.
MILliMETERS
MIN
MAX
B.13
B.B9
6.10
6.60
C 2.92
5.0B
0 0.41
0.51
F 1.02
I.7B
G
2.54 BSe
J
0.20
0.30
K 2.54
3.Bl
L
7.62 BSe
f1l
I
NOTES:
I. DIMENSIONS A ANO B ARE DATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS:
-N"~~o
0.3B
2:54
M
P
~
1.27
2.03
INCHES
MIN
MAX
0.320 0.350
0.240 0.260
~~
~"~
~
BSe
O.OOB 0.012
0.100 0.150
0.300 BSe
OO)l~
0.100
O.DIS
0.050
CASE 73DA·DI
3-59
O.OBO
MOC8030, MOC8050
LED CHARACTERISTICS ITA = 25°C unles. otherwise noted.1
Characteristic
Reverse Leakage Current
IVR = 3.0 VI
Forward Voltage
IIF = 10 mAl
Capacitance
IVR =0 V, f = 1.0 MHzI
Symbol
Min
Typ
Max
IR
-
0.005
10
I-IA
VF
-
1.2
2.0
Volts
C
-
100
-
pF
Unit
PHOTO DARLINGTON CHARACTERISTICS ITA· 25°C and IF = 0, unle•• otherwIse noted.1
•
Characteristic
Collector-Emittar Dark Currant
IVCE = 60 VI
Collector-Emittor Breakdown Voltage
IiC = 1.0 mAl
Emitter-Collector Breakdown Voltage
liE = 100 "A)
Symbol
Min
Typ
Max
Unit
ICEO
-
25
1000
nA
VIBRICEO
80
95
-
Volts
VIBRIECO
5.0
B.O
-
Volts
Symbol
Min
Typ
Max
50
30
100
50
COUPLED CHARACTERISTICS ITA = 25°C unless otherwise noted I
Charactoristic
Collactor Output Current
IVCE = 1.6 V,IF = 10mA)
Unit
mA
IC
VISO
7500
-
Isolation Resistance (1)
IV =500 VI
-
-
1011
-
Isolation Capacitance 11)
IV = 0, f = 1.0 MHz)
-
-
0.8
-
MOCB050
MOCB030
Isolation Surge Voltage II, 2), V.. 60 Hz Peek ac, 5 Second
Volts
Ohms
pF
SWITCHING CHARACTERISTICS
Turn-On Time Ii F = 10 mA, VCE = 50 V, R2 - 100 III
Turn-Off Time Ii F = 10 mA, VCE = 60 V, R2 = 100 III
(1) For this test LED pins 1 and 2 are common and Photo Darlington pins 4 and 5 are common.
121 Isolation Surge Voltage, Visa. is an internal device dielectric breakdown rating.
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - FORWARD CHARACTERISTICS
FIGURE 3 - COLLECTOR-EMITTER DARK CURRENT
vor...s TEMPERATURE
104
~
~
2.2
L
2.0
L
ff~
~~1.8
~~
iz'"~
L
1.6
!;;§l
i!
1.4
1.2
1.0
1.0
-
-
./
10 1
10
100
iF, INSTANTANEOUS FORWARD CURRENT (mAl
m
w
w
~
W
00
M
TEMPERATURE IN "CENTIGRADE
3·60
00
00
~
MOC8030, MOC8050
TYPICAL ELECTRICAL CHARACTERISTICS
COLLECTOR CURRENT versus COLLECTOR-EMITTER VOLTAGE
FIGURE 4 - MOC8050
FIGURE 5 - MOC8030
100
80
IF -15
0
0
I
I
0
I
0
m~
1F'15~
-
10
10~~
.L:'. f.-
~
/
1
0
0
II
0
2.0mA
W V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V-
Y/
10
o
o
2.0
5.0mA
./J
0.2
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
--
10mA_
III
J '/
0
0
I
5.0mA-
0
r-
2.0mA
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
1.8
2.0
COLLECTOR CURRENT versus COLLECTOR-EMITTER VOLTAGE
(at 25° and 70°C)
FIGURE 6 - MOC8050
FIGURE 7 - MOC8030
80
80
10
t
ia
'"
0
~8
0
IplOmA
-
60
I
311
~ 20
t--- -
V--- j - - j---- 1IJIlC
L r--
u
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
~
1/
0
./
0.2
-
TA-25'C
10'C
/ i--- I-- I-- ..1/1
40
00
~r-
I--
50
1F'IOmA
TA!250C
~
U
M
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTS)
M
M
U
U
U
U
U
W
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT vanus DIOOE CURRENT
FIGURE 8 - MOCB050
200
;;(
II I
100
. / ............. - I -
VCE' . V
.§
>z
-
FIGURE 9 - MOC8030
200
;;(
w
.§
z>-
a'"
a
1.0 V
/". ",..
....
VCE =2.IIV
1.0 V
w
'"
~
'"0
~
8
......
II II
100
'"
0
~
h
10
....::
10
i
~
~
2.0
1.0
1$
2.0
3.0
5.0 1.0
10
20
30
50
10
2.0
1.0
100
IF. DIODE CURRENT (mA)
"
1$
2.0
3.0
5.0 1.0
10
20
IF. DIODE CURRENT (mA)
3·61
30
50
10
100
•
MOC8030, MOC8050
•
INTERFACING TTL OR CMOS LOGIC TO 50-VOLT, lOOO-OHMS RELAY
FOR TELEPHONY APPLICATIONS
In order to interface positive logic to negative-powered electromechanical relays, a change in voltage
level and polarity plus electrical isolation are required. The MOCB050 can provide this interface and
eliminate the external amplifiers and voltage divider networks previously required. The circuit below
shows a typical approach for the interface.
Vee
Moca050
6
-50 V
3-62
®
MRD150
MOTOROLA
PLASTIC NPN SILICON PHOTO TRANSISTOR
40 VOLT
MICRO-T
PHOTO TRANSISTOR
NPN SILICON
· .. designed for application in punched card and tape readers, pattern
and character recognition equipment, shaft encoders, industrial
inspection processing and control, counters, sorters, switching and
logic circuits, or any design requiring radiation sensitivity, stable
characteristics and high-density mounting.
•
Economical Plastic Package
•
Sensitive Throughout Visible and Near Infrared Spectral Range
for Wide Application
50 MILLIWATTS
• Small Size for High-Density Mounting
•
High Light Current Sensitivity (0.20 mAl for Design Flexibility
•
Annular Passivated Structure for Stability and Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Collector Voltage
VECO
6.0
Volts
PD
50
0.67
mW/oC
Total Device Dissipation @TA = 2SoC
Derate above 25°C
Operating and Storage Junction
mW
TJ(I),Tstg -40 to +100
°c
Temperature Range
(1) Heat Sink should be applied to leads during soldering to prevent Case
Temperature from exceeding 85°C.
t
t
fC
H===~+·
---i====
~f
'1~
FIGURE 1 - COLLECTOR-EMITTER SENSITIVITY
2.0
;;
I.B
~ 1.6
I
I-
x
'"::;
'"
PIN I. EMITTER
2. COLLECTOR
VC~ =10 ~ I I I I
CO LO RTEMP =2B70"K
TUNGSTEN SOURCE
J
J
1.4
TY1-
1.2
1.0
J
O.B
0
~
0.4
'"'
..?
0.2
0
0.6
o
0.1
II
L-- r"'"
0.5
1.0
2.0
A
C
0
F
H
K
M
MILLIMETERS
MIN
MAX
1.9B
2.34
1.22
1.47
0.25
0.41
0.10
0.15
0.51
0.76
4.06
30
70
INCHES
MIN
MAX
0.07B 0.092
0.048 0.058
0.010 0.016
0.004 0.006
0.020 0.030
0.160
30
70
1
~
0.2
VMIN -
DIM
......
5.0
10
H. RAOIATION FLUX DENSITY ImW/cm2)
20
NOTE:
I. INDEX BUTTON ON PACKAGE
BOTTOM IS 0.25/0.51 mm (0.010/0.020)
OIA & 0.0510.13 mm (0.002/0.005) OFF
SURFACE.
CASE 173-01
3-63
•
MRD150
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C unless noted)
•
Characteristic
Collector Dark Current
IVCC = 20 V; Base Open)
INote 2)
TA
TA
Fig. No.
Symbol
-
'CEO
-
= 100 I'A; Base Open; Note 2)
-
Emitter-Collector Breakdown Voltage
(IE
= 100 I'A; Base Open; Note 2)
Typ
Max
Units
I'A
-
-
-
5.0
40
-
-
6.0
-
-
Min
Typ
Max
0.20
0.45
-
tr
-
2.5
-
4.0
-
l'5
0.8
-
I'm
= 250 C
= 85 0 C
Collector-Eminer Breakdown Voltage
(lC
Min
0.10
Volts
VIBR)CEO
Volts
V(BR)ECO
OPTICAL CHARACTERISTICS (T A = 25°C unless noted)
Characteristic
Fig. No.
Symbol
1
'L
Collector Light Current
IVCC = 20 V; RL
INotel)
= 100 ohms; Base Open)
rnA
Photo Current Rise Time (Note 3)
2and3
Photo Current Fall Time INote 3)
2and3
tf
-
9
AS(typ)
-
Wavelength of Maximum Sensitivity
Units
l'5
NOTES:
1. Radiation Flux Density (H) equal to 5.0 mW/cm 2 emitted from
3. For unsaturated response time measurements, radiation is
a tungsten source at a color temperature of 2870 oK.
2. Measured under dark conditions.
provided by a pulsed GaAs (gallium-arsenide) light-emitting
diode (:\. :% 0.9 /Jm) with a pulse width equal to or greater than
10 microseconds (see Figure 2 and Figure 3),
(H~.O),
FIGURE 2 - PULSE RESPONSE TEST CIRCUIT
FIGURE 3 - PULSE RESPONSE TEST WAVEFORM
Vee
+20V
0.1 V- -
-
-
-1 ....----"""'\1
-----90%
N.e.~--~f-{
i= 1.0 rnA
PEAK
j
OUTPUT
t,
3·64
MRD150
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 5 - COLLECTOR
SATURATION CHARACTERISTICS
FIGURE 4 - COLLECTOR-EMITTER CHARACTERISTICS
I.0
COLOR TEMp· 2870'1<
TUNGSTEN SOURCE
....-
1 o.8 r
...
...""~
O.6
::>
'"0:
-
H ·10 mW/cm2
I"""
8
~
0,
~
4
>
1.2
0:
~
ii
o
~
1. 6
o
510
4
o. 2
2.0
10
o.8
_
O.6
O. 4
COLORTEMP=287 K \
T~N1srEIN ~Om~ II
15
20
25
>'"
0
0.1
....... 1'0
5.0
2.0
FIGURE 6 - DARK CURRENT versus TEMPERATURE
5
1
~
_
VCE· 20 V
~
H·O
'"'"
~
0
'"
«
o
'"
/"
/"
5
~
0
1
1
8
5.0
~
40
60
,
,/'
I
I
L
\
\
40
20
20
40
60
1\
/
\
60
"'" \
/
0
\
0
J
80
/
II
0
/
V
0
0
100
\
V
0
50
FIGURE 9 - CONSTANT ENERGY SPECTRAL RESPONSE
1\
/
0
40
30
20
100
'\.
J
./'
V
10
..........
/
0
/"
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE 8 - ANGULAR RESPONSE
V
k'"
0
100
80
,/'
TA. AM8IENT TEMPERATURE IOC)
100
100
./'
H=O
20
0
20
50
T~ = 250 C
-
0:
0
-20
20
FIGURE 7 - DARK CURRENT versus VOLTAGE
10.000
0.0 1
-40
10
H. RADIATION FLUX DENSITY ImW/cm 2)
VCE. COLLECTOR·EMITTER VOLTAGE IVOL TS)
0
\
I I 1111111
I I IUllil
0.2
0.5
1.0
~ O. 2
0
5.0
~
o
0.5
1.0
1.0
IC'O.l mA
1.0
g
}O
•
1.8
~
7.0
,-
2.0
~o
80
\
0
0.4
100
3-65
\
1\
\
/
\.
0.5
0.6
0.7
0.8
X. WAVELENGTH
ANGLE 10'11""")
\
0.9
I~m)
1.0
1.1
1.2
®
MRD160
MOTOROLA
PLASTIC NPN SILICON PHOTO TRANSISTOR
•
40 VOLT
PHOTO TRANSISTOR
NPN SILICON
· .. designed for application in punched card and tape readers, pattern
and character recognition equipment, shaft encoders, industrial
inspection processing and control, counters, sorters, switching and
logic circuits, or any design requiring radiation sensitivity, stable
characteristics and high-density mounting.
•
Economical Plastic Package
•
Sensitive Throughout Visible and Near Infrared Spectral Range
for Wide Application
•
Small Size for High-Density Mounting
•
High Light Current Sensitivity (0.50 mAl for Design Flexibility
•
Annular Passivated Structure for Stability and Reliability
•
Complement to MLED60/90 LEOs
MAXIMUM RATINGS
Rating
Svmbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Collector Voltage
VECO
6.0
Volts
PD
100
1.3
mW
mW/oC
TJ(II,Tstg
40 to +B5
°c
Total Device Dissipation @TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
(1) Heat Sink should be applied to leads during soldering to prevent Case
Temperature from exceeding 8SoC.
-Hi
r=
I-
-
K
-'.
K
G
10
i
Ga As SOURCE
5.0
o
:;
3,0
~~
2.0
-'",
IL
/'
./
<0
~ ffi 1.0
z>-
~~
~
§ O. 5
L
,,>~
>-
O. 3 V
:::;
.;:
O. 1
~
O.2
0.2
28700K TUNGSTEN SoURCE-
II I
II I
./
0.5
1.0
2.0
5.0
10
- I---'
J
t---
STYLE 3:
PIN 1. EMITTER
2. COLLECTOR
/'
",,,,
J
_l~
~
J\ 'L
FIGURE 1 - NORMALIZED LIGHT CURRENT versus
RADIATION FLUX DENSITY
N
~
2
20
H, RADIATION FLUX DENSITY (mW/cm 2j
DIM
A
B
C
D
F
H
J
K
M
MILLIMETERS
MIN
MAX
2.34
2.59
1.11
1.36
1.39
1.64
0.64
0.74
0.46
0.56
1.57
1.83
0.10
0.30
9.65
110
90
-
INCHES
MIN MAX
0.092 0.102
0.083 0.093
0.094 0.104
0.025 0.019
0.018 0.021
0.061 0.071
0.008 0.012
0.380
90
CASE 234·04
3-66
°
MRD160
STATIC ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless noted)
Characteristic
Fig. No.
Symbol
-
ICEO
Collector Dark Current
(VCC = 20 V; Note 2)
TA
TA
Min
-
Emitter-Collector Breakdown Voltage
liE = lOO/LA;Note 2)
-
Max
Units
/LA
= 250 C
=850 C
Coliector·Emitter Breakdown Voltage
IIc = 100 /LA; Note 2)
Typ
-
0.10
5.0
Volts
V(BA)CEO
40
-
-
6.0
-
-
Min
Tvp
Max
0.50
1.5
-
Volts
V(BA)ECO
OPTICAL CHARACTERISTICS (TA ~ 25°C unless noted)
Characteristic
Fig. No.
Symbol
1
IL
Collector Light Current
(VCC = 20 V; RL = 100 ohms; Note II
Units
mA
Photo Current Aise Time (Note 31
2and3
tr
-
2.5
-
p.s
Photo Current Fall Tima (Note 31
2and3
tf
-
4.0
-
p.s
NOTES:
1. Radiation Flux Density (HI equal to 5.0 mW/cm2 emitted from
3. For unsaturated response time: measurements, radiation is
a tungsten source at a color temperature of 2870 oK.
provided by a pulsed GsAs (gallium-arsenide) light-emitting
diode (i\. = 0.9 /otm) with a pulse width equal to or greater than
2. Measured under dark conditions. (H"".O),
10 microseconds (see Figure 2 and Figure 3),
FIGURE 2 - PULSE RESPONSE TEST CIRCUIT
FIGURE 3 - PULSE RESPONSE TEST WAVEFORM
vee
+20 v
0.1 V- -
-
-
-ir-------.
-
i= 1.0mA
PEAK
I
RL = lOon
OUTPUT
3·67
-
-
-
-90%
•
MRD160
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 5 - PULSED LIGHT CURRENT v...... DISTANCE
FIGURE 4 - CONTINUOUS LIGHT CURRENT versus DISTANCE
..
10
5.0
;f'
SOURCE" MLED60
TA"25'C
.5
2.0
"-
~
1.0
"-
100
==
=
50
1
20
~
10
~
0.5
0.2
~
13
- -
........
0.05
'"
::;
If" 50 rnA
~ 1.0
2.0
4.0
6.0
8.0
10
12
14
-"
16
18
2.0
20
4.0
r - - -_.
- ----
6.0
~
\
------
0.4
0.5
\
0.7
0.6
0.8
0.9
80
0
i=
40
"">
~
"
1.0
/
~
'\.
--
---
0
0.3
""'"z
---
\
\
V
---
/
/
O-L
80
1.4
1.0
ffi~
0.8
0.6
8
J
>
"-
IC=200pA
0
0.2
/ "\.
\
1\
\
_'\
I'\.
.........
60
40
20
-
-
0.4
0.2
20
r\
~o
j>
18
\
>-~
~>-~~
0.10 A
\
IIII
=>
~~
16
/
TA=2S'C
2870'K
TUNGSTEN
SOURCE
1.2
_
14
20
8,ANGLE DEGREES
o
~
12
/
FIGURE 8 - SATURATION CHARACTERISTICS WITH
TUNGSTEN SOURCE
~
10
/
o~
1.1
J
X, WAVELENGTH I"m)
z
-
FIGURE 7 - ANGULAR RESPONSE
'"'\
-----
--
8.0
10 0
V
0/
1--
/
~
j
f - - - f-.-----
0
/
.-
;s;-
d, LENS SEPARATION Imm)
FIGURE 6 - CONSTANT ENERGY SPECTRAL RESPONSE
80 f--- - - -
_~=1.0A
O. 1
d, LENS SEPARATION Imm)
100
---
.......
0,2
10m?
o
........
-
O.S
25mA-
r--..
0.02
~'=
f---
!;;
r--.
r--...
...J O. 1
0.01
SOURCE - MLED60
PULSE WIDTH -300",
TA 2S'C
,I--..
>-
"'-
~
>~
::;
r----- -
I
I
O.S
1.0
SOO"A
2.0
1.0 rnA
S.O
H, RADIATION fLUX DENSITY ImW/cm2)
3·68
2.0 mA
10
20
40
60
80
®
MRD300
MRD310
MOTOROLA
50 VOLT
PHOTO TRANSISTOR
NPN SILICON
NPN SILICON HIGH SENSITIVITY
PHOTO TRANSISTOR
· .. designed for application in industrial inspection, processing and
control, counters, sorters, switching and logic circuits or any design
requiring radiation sensitivity, and stable characteristics.
250 MILLIWATTS
•
• Popular TO·1S Type Package for Easy Handling and Mounting
• Sensitive Throughout Visible and Near Infrared Spectral Range
for Wider Application
• Minimum Light Current 4 mA at H = 5 mW/cm2 (MRD300)
• External Base for Added Control
• .Annular Passivated Structure for Stability and Reliability
MAXIMUM RATINGS ITA = 250 C unless otherwise noted)
Symbol
Value
Unit
COllector-Emitter Voltage
VCEO
50
Volts
Emitter-Collector Voltage
VECO
7.0
Volts
VCBO
eo
Volts
PD
250
mW
1.43
mWt"C
-65 to +200
°c
Rating
Colleetor·Base Voltage
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Operating Junction and Storage
Temperature Range
TJ,T st9
6
IVC~~20V I
I
I
/
MRD300
V
TUNGSTEN SOURCE
COLOR TEMP' 2870 0 K
SEATING
PLANE
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
;t
E
2
;:1
~
V
'"'"=> 8. 0
~
'":::;
..=.4.0
0
0.5
......
1.0
-
-/'
V
...... 1-"
/
MR0310
'"
2.0
5.0
10
20
H, RAOIATION FLUX DENSITY (mWI'm2)
F
NOTES:
1. LEAOSWITHIN .13 mm (,005) RADIUS
OF TRUE POSITION AT SEATING
PLANE,AT MAXIMUM MATERIAL
CONDITION.
2. PIN 3 INTERNALLY CONNECTEO TO
CASE.
FIGURE 1 - LIGHT CURRENT versus IRRADIANCE
20
B
L
50
CASE 82.{)5
3·69
MRD300, MRD310
STATIC ELECTRICAL CHARACTERISTICS
(TA" 25°C unless otherwise noted)
Symbol
Characteristic
Collector Dark Current
Min
Typ
Max
Unit
-
5.0
4.0
25
na
I'A
ICEO
(VCC = 20 v, H",O) TA - 25°C
TA" 1000C
•
-
-Volts
Collector·Base Breakdown Voltage
IIC" 1001'A)
V(BR)CBO
80
120
Collector-Emitter Breakdown Voltage
(lC" 1001'A)
V(BR)CEO
50
85
-
Volts
Emitter-Collector Breakdown Voltage
(IE" 100 I'A)
V(BR)ECO
7.0
8.5
-
Volts
OPTICAL CHARACTERISTICS
(TA " 25°C unless otherwise noted)
Device
Type
Characteristic
light Current
Symbol
Min
Typ
Max
4.0
1.0
8.0
3.5
-
(VCC" 20 V, RL" 100ohms) Note 1
MRD300
MRD310
Light Current
(VCC" 20 V, R L " 100 ohms) Note 2
-
2.5
0.8
-
mA
IL
MRD300
MRD310
Unit
mA
IL
-
Photo Current Rise Time (Note 31 (RL = 1000hms
IL" 1.0 mA peak)
tr
-
2.0
2.5
I'S
Photo Current Fall Time (Note 3) (RL -100ohms
IL" 1.0 mA peak)
tf
-
2.5
4.0
I'S
NOTES:
1. Radiation flux density (H) equal to 5.0 mW/cm 2 emitted from
a tungsten source at a color temperature of 2870o K.
2. Radiation flux density (H) equal to 0.5 mW/cm 2 (pulsed) from
a GaAs (gallium-arsenide) source at A~O.9IJm.
3. For unsaturated response time measurements, radiation Is provided by pulsed GsAs (gallium-arsenide) light-emitting diode
V •. ~ 0.9 I'm)' with a pulse width aqual to or greater than 10
microseconds (see Figure 6) I L == 1.0 mA peak.
3-70
MR0300, MRD319
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - COLLECTOR·EMITTER
SATURATION CHARACTERISTIC
FIGURE 3 - NORMALIZED LIGHT CURRENT
_ ... TEMPERATURE
2.0
1.0r-.,-,rrT11rrr-,-...--,--,r-r-,-rr;rr---,,...-..---,
TUNGSTEN SOURCE
1-t-1-+l.'
•. I-1)flH
'-+-.l.+--+-l1.'"++,
J..I~C,OLOR TEMP = 28700 K
~ 0.811.0mA 2.0mA-f--; \5.0mA+++--1-I--l
-
I
II
~
1.8 I-vdc = 20'V
Note 1
1.6
g
~ 0.61-t-H+lHtI--tt-+-+-+t-t++++--+-lI--I
\
N
ffi
« 1.0
ffi
::;
'"'0"'
~OAI-t-H+lHH""--rrr-+-+~,tr\++++-+-+--I
:!i
~
~
~
....
\
0.21- H
0
0.3
t"tiTi "-
II I .0
0.5
2.0
5.0
H. RADIATION F LUX DENSITY (mW/tm21
-
20
1.4
./
1.2
0.8
,/
0.2
o
30
·100
·75
-50
u.
]
5.0
100
125
150
'-
;:: 5.0
....
-f--
10000-
ir 4.0
r-
3.0
r--.
2. 0
-.....;;:
1.0
0.5
1.0
2.0
5.0
Il, LIGHT CURRENT (mAl
...
~
'"=>
'0"'
5000-
...
25001000500_
if
10
10000_
....
~
0
~
if
0.2
75
Note 3
6.0
~
o
50
FIGURE 5 - FALL TIME .ersus
LIGHT CURRENT
Note 3
6.0
~
:=o
25
7.0
w
!i<
::!
'"
13
-25
TA.AMBIENT TEMPERATURE (OCI
FIGURE 4 - RISE TIME ....
LIGHT CURRENT
!
V
,/
0.6
V
0.4
7.0
]
./
/'
;:-
4.0
--
"""-
3.0
2.0
2500
~~0J:-
1.0
o
20
5000
~
0.2
0.5
1.0
2.0
3.0
5.0
10
IL. LIGHT CURRENT (mAl
FIGURE 6 - PULSE RESPONSE TEST CIRCUIT AND WAVEFORM
VCC
+2oV
hv
IL=I.0mA------:r----.....
- - - - - - ------90%
.....
N.C. 0 - - - - - 1
OUTPUT
3-71
20
•
MRD300, MRD310
FIGURE 1 - DARK CURRENT VI""S TEMPERATURE
~
~
'"
a'"
'"
"'"co
•
m:~
~j
co
40
10
1.0
~ ==
H=O
VCPlOV
O. 1
0.01
0.001
'"6
~O.OOO 1
0.00001
·50
25
·25
75
50
100
125
TA. AMBIENT TEMPERATURE (DC)
FIGURE 8 - CONSTANT ENERGY SPECTRAL RESPONSE
100
/"
II
80
J
~
w
~
z
60
w
40
~
>
g
20
V
/
FIGURE 9 - ANGULAR RESPONSE
100
'"'" \
r\
./
80
\
~
'">w
40
.
20
;::
~
o
0.4
0.5
0.6
0.7
0.8
0.9
A, WAVELENGTH (pm)
I
1
I
I
I
I
~
z 60
1\
\
/
I
~
\
1.0
1.1
o
40
1.2
",
/"
30
20
\
\
\
\
\
\
10
0
10
ANGLE (DEGREES)
3-72
20
30
40
®
MRD360
MRD370
MOTOROLA
NPN SILICON HIGH SENSITIVITY
PHOTO DARLINGTON TRANSISTORS
· .. designed for application in industrial inspection, processing and
control, counters, sorters, switching and logic circuit or any design
requiring very high radiation sensitivity at low light levels.
•
Popular TO·18 Type Hermetic Package for Easy Handling and
Mounting
•
Sensitive Throughout Visible and Near Infrared Spectral Range
for Wider Application
•
Minimum Light Current 12 mA at H = 0.5 mW/cm 2 (MRD360)
•
External Base for Added Control
•
Switching Timest r @ IL = 1.0 mA peak = 15 j.LS (Typ) - MRD370
tf@ IL = 1.0 mA peak = 25 j.LS (Typ) - MRD370
PHOTO DARLINGTON
TRANSISTORS
NPN SILICON
40 VOLTS
250 MllliWATTS
•
/-A-
MAXIMUM RATINGS ITA
l
=
25°C unless otherwise notedl.
Rating
Svmbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Base Voltage
VEBO
10
Volts
Collector-Base Voltage
VCBO
50
Volts
Il
250
mA
Po
250
1.43
mW
mW/oC
TJ,Tstg
-65 to +200
°c
Light Current
Total Device Dissipation
Derate above 25°C
@
T A =- 25°C
Operating and Storage Junction
Temperature Range
100
--
t--t-
:<
~
I-
MRVi
20
./
ffi
L
~ 10
=>
......-
........
.t.- r-
~370
<..>
I-
:z:
to 5.0
::;
/
;}
2.0
1.00
/
/'
0.1
VCE=5.0V- I--H@28700 K
/
I
/
0.2
0.7
0.8
0.3
0.4
0.6
0.5
H, RADIATION FLUX DENSITY ImW/cm2)
0.9
L
SEATING
PLANE
l
D-~
~
L~I
STYLE I:
PIN 1. EMlnER
2. BASE
3. COLLECTOR
NOTES:
1. LEADS WITHIN .13 mm (,0051 RADIUS
OF TRUE POSITION AT SEATING
PlANE,AT MAXIMUM MATERIAL
CONDITION.
2. PIN 3 INTERNALLY CONNECTED TD
CASE .
FIGURE 1 - LIGHT CURRENT versus IRRADIANCE
50
~r1
r--r I
1.0
MILLIMETERS
DIM MIN MAX
5.31 5.84
A
4.52 4.95
B
4.57 6.48
C
0.41 0.48
0
1.14
F
2.54 BSC
G
H
0.99 1.17
J
0
1.22
12.70
K
3.35 4.01
L
M
45u esc
INCHES
MAX
MIN
0.209 0.230
0.178 0.195
0.180 0.255
0.016 0.019
- 0.045
0.100 BSC
0.039 0.046
0.033 0.048
0.500
0.132 0.158
46° .nIL
CASE B2.()5
TO-1S Type
3-73
-
MRD360, MRD370
STATIC ELECTRICAL CHARACTERISTICS
(TA' 2S oC unless otherwise noted.)
Characteristic
Collector Dark Current
(VCE = 10 V, H ""O) TA = 2So C
Min
Typ
Ma.
Unit
ICEO
-
10
100
nA
Collector-Base Breakdown Voltage
(lC = l00I'A)
V(BR}CBO
50
100
-
Volts
Collector·Emitter Breakdown Voltage
V(BR}CEO
40
80
-
Volts
V(BR}EBO
10
15.5
-
Volts
Min
Typ
Ma.
Unit
12
3.0
20
10
-
0.6
1.0
Volts
15
15
100
100
I'S
65
40
150
150
I'S
(lC
= 1001'A)
Emitte,·Base Breakdown Voltage
•
Symbol
(IE
= l00I'A)
OPTICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted.1
DevicoType
Characteristic
Light Current
VCC = 5.0 V, RL = 10 Ohms (Note I)
Symbol
mA
IL
MRD360
MRD370
Collector-Emitter Saturation Voltage
(I L = 10 mA, H = 2 mW/cm 2 at 28700 KI
VCE.(sat}
--
Photo Current Rise Time (Note 2)
(RL = 100 ohms
IL = 1.0 mA peak)
MRD360
MRD370
tr
-
Photo Current Fall Time (Note 2)
(RL = 100 ohms
IL = 1.0 mA peak)
MRD360
MRD370
tf
-
NOTES:
1. Radiation flux density (H) equal to 0.5 mW/cm 2 emitted from
a tungsten source at a color temperature of 2780o K.
2. For unsaturated response time measurements. radiation is provided by pulsed GaAs (gallium-arsenide) light-emitting diode
(A ... 0.9 I'm) with a pulse width equal to or greater than 500
microseconds (see Figure 6) IL = 1.0 mA peak.
3·74
MR0360, MRD370
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - COLLECTOR-EMITTER
SATURATION CHARACTERISTIC
~o
H-1-0mWlcm 2
0
~
1-2
w
~
---- -
~I 1.0
=
~
~
=
o
O. 8
r--
G
j
FIGURE 3 - COLLECTOR CHARACTERISTICS
100
1.4
I O. 6
8
-
~L·20mAI
r-~
r-
0.5
1.0
2.0
H, RADIATION FLUX DENSITY (mWlcm2)
2. 0
0jl
1. 0
o
10
5.0
1000
t-
~
5. 0
3
3. 0
2. 0
./
t-
/'
v
:::>
'-'
~
~
-
,... . /
VCE 5.0 V
H • O.S mWlcm 2 @28700 K-
~
O. 2
1
O. -60
-40
-20
20
40
0
o
~
O. 3
100
""~1.0pA
../
1. 0
O. 7
t- O.5
'"'"3
0
8.0
B.O
FIGURE 5 - DARK CURRENT versus TEMPERATURE
0
~
a
4.0
2.0
VCE, COLLECTOR EMITTER VOLTAGE (VOLTSI
FIGURE 4 - NORMALIZEO LIGHT CURRENT
versus TEMPERATURE
N
•
0
--- r-~
l - I--
0.2
2.0mft
0.2
0.1
"""'"
~
DiS
0
l"- I--
w
~I O.4
ffi
vI-
0
60
80
100
120
140
TA, AMBIENT TEMPERATURE (OC)
0
10
H
VCE
0
~ov~ ~ ~
- t-- t--
0
0.1 nA
-10
20
40
100
60
80
TA, AMBIENT TEMPERATURE (OCI
120 130
FIGURE 6 - PULSE RESPONSE TEST CIRCUIT AND WAVEFORM
'L' 1.0 mA- - - - --:r-----'\t
- - - - - - ------90%
N.C.o-----"-H
i= 1.0mA
PEAK
I
OUTPUT
MR0360, MR0370
FIGURE 7 - CONSTANT ENERGY SPECTRAL RESPONSE
100
/'
'/
0
0
•
V
"°
/
O.8
\
~
0,7
'"~
O.6
O. 5
w
\
~
\
I
~
~
\
0.5
0.6
0.7
0.8
0.9
1.0
1.1
"
\
\
\
I
I
I
I
O. 4
0
-20
1.2
I
0,3
O. 2
0, 1
o
0.4
/'
O.9
\
/
0
0
""'" \
FIGURE 8 - ANGULAR RESPONSE
/
-16
\
\
/
-12
1\
-8
-4
+4
ANGLE (DEGREES)
A, WAVELENGTH l"mJ
3·76
+8
+12
'\...+16
+20
®
MRD450
MOTOROLA
PLASTIC NPN SILICON PHOTO TRANSISTOR
40 VOLT
PHOTO TRANSISTOR
NPN SILICON
· .. designed for application in industrial inspection, processing and
control, counters, sorters, switching and logic circuits or any design
requiring radiation sensitivity, and stable characteristics.
•
Economical Plastic Package
•
Sensitive Throughout Visible and Near Infrared Spectral Range
for Wide Application
•
Minimum Sensitivity (0.2 mA/mW/cm2) for Design Flexibility
•
Unique Molded Lens for High, Uniform Sensitivity
•
Annular Passivated Structure for Stability and Reliability
100 MILLIWATTS
MAXIMUM RATINGS
Symbol
Value
Unit
Coliector·Emitter Voltage
VCEO
40
Volts
Emitter-Collector Voltage
VECO
6.0
Volls
Po
100
1.3
mW
mW/oC
TJ (I)
-4010 +85
°C
TSl9
-4010 +85
°C
Rating (Note 1)
Total Device Dissipation @ TA:;:: 25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
rL====={O'2F==-.1'J
(1) Heat Sink should be applied to leads during soldering to prevent Case Temperature from
exceeding 85°C.
FIGURE 1 - COLLECTOR·EMITTER SENSITIVITY
1.0
VCC=20V
COLOR TEMP = 28701<
TUNGSTEN SOURCE
0:
~~
0.8
~~1
0.6 (---
~
.......... rTYP
=e>
wi=f-w-
""" 3:
j~~
oi=E
'-'<-
de
w<
./
0.4
-
,..,.
NOTE:
1. LEAD IDENTIFICATION: SQUARE
BONDING PAD OVER PIN 2.
I--'~
DIM
A
C
D
F
'-'0:
tJf
0.2
MIN
o
H
f-- ~
0.1
0.2
t
0.5
1.0
2.0
5.0
10
H, RADIATION FLUX OENSITY (mW/cm2)
20
K
L
n
MILLIMETERS
MIN MAX
3.56
4.57
0.46
0.23
1.02
6.35
0.33
1.91
4.06
5.33
0.61
0.28
1.27
0.48
NOM
INCHES
MIN
MAX
0.140 0.160
0.180 0.210
O.OIB 0.024
0.009 0.011
0.040 0.050
0.250
0.013 0.019
0.075 NOM
CASE 171-02
3-77
•
MRD450
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector Dark Current
(Vee
•
~
Min
Typ
Max
-
-
0.10
-
5.0
-
40
-
-
6.0
-
-
Min
Typ
Max
0.2
0.8
-
Unit
/LA
ICEO
20 V, No•• 21
TA
TA
= 250 C
= 850 C
Collector-Emitter Breakdown Voltage
(lC = 100 /LA; No.e 21
V(BRICEO
Emitter-Collector Breakdown Voltage
(IE = 100 "A; No.e 21
V(BRIECO
Volts
VailS
Of TICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Fig. No.
Symbol
1
SRCEO
Collector-Emitter Radiation Sensitivity
Unit
mA/mW/cm 2
(VCC = 20 V, RL = 100 ohms, Note 11
Photo Current Rise Time (Note 3)
2and3
t,
-
-
2.5
Photo Current Fall Time (Note 3)
2and3
tf
-
-
4.0
/LS
9
~s
-
0.8
-
/Lm
Wavelength of Maximum Sensitivity
/LS
NOTES:
1. Radiation Flux Density (H) equal to 5.0 mW/cm2 emitted from
3. For unsaturated response time measurements, radiation is
a tungsten source at a color temperature of 2870o K.
provided by a pulsed GaA.s (gallium-arsenide) light-emitting
diode (A. ~0.9 .uml with a pulse width equal to or greater than
10 microseconds (see Figure 2 and Figure 31.
2. Measured under dark conditions. (H ~ 01.
FIGURE 2 - PULSE RESPONSE TEST CIRCUIT
VCC
+20 V
FIGURE 3 - PULSE RESPONSE TEST WAVEFORM
0.1 V - -
-
-
-
,------,.
-
N.C.D----t---{.
i= 1.0 rnA
PEAK
j
RL = 100l!
OUTPUT
3-78
-
-
-
-90%
MRD450
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 5 - COLLECTOR SATURATION
CHARACTERISTICS
FIGURE 4 - COLLECTOR·EMITTER CHARACTERISTICS
10
;( 8.0 t - - ; - -
.s....
/~
~
~ 6.0
f
G
f--
'"
o
~
4.0
./~
./
8
E 2.0
1-
\1= lom>Nlc m
-~,......
~ 2. 0
COLOR TEMp· 2870'1<
r- TUNGSTEN SOURCE
-
c5
1.8
~
1.4
>
1.2
~
o
-
:z
7.0
~ 1.0
~
5.0
1---
3.0
~
;-..
1.0
8
1---
10
1\ IC·O.1 mA
O. 8
20
15
0.5
1.0
5.0
O. 6
o.4
0
25
1\ 1\
"
w o. 2
,;:'
5.0
0.1
0.2
0.5
1.0
2.0
"5.0
FIGURE 6 - DARK CURRENT ••rsusTEMPERATURE
10.000
VCE" 20 V
10
1.0
o
/
~ 0.1
r
0.0 1
··40
-20
20
40
60
TA. AMBIENT TEMPERATURE lOCI
80
100
r
/
V
80 1--- f--.
§
'"z
60
'"
>
40
~
~-
I
~
o
40
'\.
10
10
\
\
\
\
\
20
30
/'
II
0
\ ,---
-- .
20
20
J
-----'
II
30
10
100
-- -----
f
f
f
f
I
r-----
20
,-
V
40
50
FIGURE 9 - CONSTANT ENERGY SPECTRAL RESPONSE
..........
--c---
V
V
V
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 8 - ANGULAR RESPONSE
10O
V
V
o
o
.,/
.,/
t:= H· 0
B100 r-
u
100
,/
TA·250C
f---- H' 0
....
;::
50
25
-=1000
~
20
FIGURE 7 - DARK CURRENT 'enus VOLTAGE
~
'"'"~
'"o
~
10
H. RAOATION FLUX OENSITY (mW/cm 2)
VCE. COLLECTOR·EMITTERVOLTAGE (VOLTS)
~
•
l
g
o
~
2.0
o
o
CO LO R TEMP' 2870'1<
TUNGSTEN SOURCE
>
~ 1.6
0
/
0
0
\
30
0
0.4
40
ANGLE (DEGREESI
3·79
V
/
"
\
\
,
\
I
0.5
\
0.6
0.7
0.8
~.
WAVELENGTH
0.9
(~m)
1.0
\
\.
1.1
1.2
®
MRDSOO
MRDS10
MOTOROLA
PHOTO DIODE
PIN SILICON
PIN SILICON PHOTO DIODE
100 VOLTS
100 MILLIWATTS
· .. designed for application in laser detection, light demodulation,
detection of visible and near infrared light-emitting diodes, shaft or
position encoders, switching and logic circuits, or any design requiring
radiation sensitivity, ultra high-speed, and stable characteristics .
•
• Ultra Fast Response - «1.0 ns Typ)
•.
. . .
MRD500 (1.2 j.lA/mW/cm 2 Min)
High Sensitivity - MRD510 (0.3 j.lA/mW/cm2 Min)
• Available With CODvex Lens (MRD500) or Flat Glass (MRD510) for
Design Flexibility
• Popular TO-1S Type Package for Easy Handling and Mounting
• Sensitive Throughout Visible and Near Infrared Spectral Range
for Wide Application
•
~-i
Bf
lTe
Annular Passivated Structure for Stability and Reliability
NOTES:
1. PIN 2INTERNALl Y CONNECTED
TO CASE
2. LEADS WITHIN 0.13 mrn (O.OOSI
RADIUS OF lAUE POSITION AT
SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
SEATING,
PLANE
K
DIM
-.-l
0-<1MAXIMUM RATINGS
Rating
Svmbol
Value
Unit
Reverse Voltage
VR
100
Volts
Total Device Dissipation@TA= 250 C
Po
100
0.57
mW
mW/oC
TJ.Tstg
-65 to +200
°c
Derate above 25°C
Operating and Storage Junction
Temperature Range
R
.. ....
A
0.1
L~
IT A = 250 C unless otherwise noted)
I.
....
.
1.02
1.17
I.
STYLE 1:
PIN 1. ANODE
PIN 2. CATHODE
CASE 209-01
·W·
--t
NOTES:
FIGURE 1 - TYPICAL OPERATING CIRCUIT
"
SEATIN.
+V
PLAN'
K
-.-l
0-11-
H~
L~
+-----oV,ianaI
500
STYLE 1:
I. PIN 21NTERNALl..Y CONNECTED
TO CASE
2. LEADS WITHIN 0.13 (0.005)
RADIUSOFTRUEPOSITION
AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
,
...
...
• ...
I
DIM
I
~"
0.2
•
• .... ., '~
I.
.. ~ r
PIN 1. ANODE
2. CATHODE
CASE 210-01
3-80
'IICH
I
a.-
•
MRDSOO, MRDS10
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Fig. No.
Dark Current
(VR = 20 V. R L = 1.0 megohm; Note 2)
TA = 2So C
Symbol
Typ
Min
Max
4 and 5
Unit
nA
10
-
14
-
2.0
Reverse Breakdown Voltage
(lR = 10jtA)
-
V(BR)R
100
300
-
Volts
Forward Voltage
(IF = SOmA)
-
VF
-
0.82
1.1
Volts
Series Resistance
-
Rs
-
1.2
10
ohms
6
CT
-
2.5
4
pF
Fig. No.
Symbol
Min
Typ
Max
TA = l000C
(IF = SOmA)
Total Capacitance
(VR = 20 V; f = 1.0 MHz)
OPTICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Radiation Sensitivity
(VR = 20 V. Note 1)
Sensitivity at 0.8 J,Lm
(VR = 20 V. Note 3)
MROSOO
MRD510
2and 3
-
1.2
0.3
3.0
0.42
-
-
6.6
-
1.5
-
jtA/mW/cm 2
S(~ = 0.8jtm)
MR0500
MR0510
Response Tir:ne
-
-
t(resp)
7
As
-
(VR = 20 V. RL = 50 ohms)
Wavelength of Peak Spectral Response
-
1. Radiation Flux Density (H) equal to 5.0 mW/cm2 emitted from
a tungsten source at a color temp.ratur. of 2870o K.
(H~O).
3. Radiation Flux Density (H) equal to 0.5 mW/cm 2 at 0.8 I'm.
3-81
ns
1.0
NOTES:
2. Me.sured under dark conditions.
Unit
iAAlmW/cm 2
SR
0.8
-
jtm
•
MRD500, MRD510
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - IRRADIATED VOLTAGE - CURRENT
CHARACTERISTIC FOR MRD500
FIGURE 3 - IRRADIATED VOLTAGE - CURRENT
CHARACTERISTIC FOR MRD 510
10a
10
H -10W/cm 1
a
5. 0
10
I
a
•
I
1.0
a
1.0
1.a
a
B 1.0
s:~ 8.S
a:
2.0
::!
0.51--
30
40
50
60
1.01===
0.1
I
10
o. 1
70
80
90
100
a
10
~
VR, REVERSE VOLTAGE (VOLTS)
FIGURE 4 - DARK CURRENT .ersus TEMPERATURE
VR
H
...
o. 1
V ...
100
75
125
oV
150
10
~
20
FIGURE 6 - CAPACITANCE _sus VOLTAGE
50
60
70
80
80
6.0
~
~
5.0
~
70
~
60
~a:
z
"-
!:!
;
..; 2. a
w
"'
1. 0
L\
i
/
40
,
~
/
~
0
J
/
50
0
0
,/
\.
0
10
30
40
50
60
100
~
L
90
f= 1.bMHz
10
90
FIGURE 7 - RELATIVE SPECTRAL RESPONSE
100
7.0
3.0
40
VR, REVERSE VOLTAGE (VOLTS)
8.0
;;:;
V
V
TA, TEMPERATURE (0 C)
§
I-"""
I--
V
o
O. 1
4.0
REVERSE VOLTAGE
_IUS
~
a:
.1.0
50
~
T=~50C_ I--
a:
10
0.0 1
15
90
H= 0
ffi
"'
a
......
~
80
0.15
!f! 0.05
~
ro
60
=10 V f-=a
«
C>
E
90
FIGURE 5 - DARK CURRENT
i
a:
~
~
O. 2
...~~ 10a
:i
~
VR, REVERSE VOLTAGE (VOLTS)
10,000
1000
b;:;
5.0
0.5
10
t=:.H • 20 mW/cm~
101--
~
I
1.a
=
E 2.0
5.0
a
f= r=TUNGSTEN SOURCE TEMP' 2870 K
70
80
90
~
100
~
M
"
~
V
M
~,WAVELENGTH
VR, REVERSE VOLTAGE (VOLTS)
3-82·
(pm)
M
U
~
U U
®
MRD3010
MRD3011
MOTOROLA
OPTICALLY TRIGGERED
TRIAC DRIVER
250 V NPN SILICON PHOTO TRIAC DRIVER
•
... designed for applications requiring light and infrared
LED TR lAC triggering, small size, and low cost.
•
Hermetic Package at Economy Prices
•
Popular TO-18 Type Package for Easy Handling and Mounting
•
High Trigger Sensitivity
HFT = 0.5 mW Icm 2 (Typ-MRD30ll)
MAXIMUM RATINGS (TA = 250 C unless otherwise noted)
Symbol
Value
Unit
VDRM
250
Volts
IT(RMS}
100
50
mA
mA
ITSM
1.2
A
Total Power Dissipation @TA - 25°C
Derate above 2SoC
PD
400
2.28
mW
mW/oC
Operating Ambient Temperature Range
TA
-40 to +70
Junction Temperature Range
TJ
-40 to + 100
T stg
-40 to +150
-
260
Rating
Off-5tate Output Terminal Voltage
On-5tate RMS Current
(Full Cycle, 50 to 60 Hz)
TA
TA
Peak Nonrepetitive Surge Current
(PW = 10 ms, DC = 1O%)
Storage Temperature Range
Soldering Temperature (las)
25 0 C
= lOoC
SEATING
PLANE
uc
uc
°c
uc
STYLE 3,
PIN 1. MAIN TERMINAL
2. MAIN TERMINAL
3. SUBSTRATE
(do notconnettl
'-' MAIN TERMINAL 1
H
\\
.....
NOTES,
1. LEADS WITHIN .13 mm (.005) RADIUS
OF TRUE POSITION AT SEATING
PLANE, AT MAXIMUM MATERIAL
CONOITION.
2. PIN 3 INTERNALLY CONNECTED TO
CASE .
DIM
A
B
C
0
- MAIN TERMINAL 2
MIlliMETERS
MAX
MIN
5.31
4.52
4.57
0.41
5.B4
4.95
6.48
0.48
~
G l---i:s4 ~S14
H
J
K
L
M
0.99
0.84
12.70
3.35
45"
1.17
1.22
-
4.01
SSC
INCHES
MIN
MAX
0.209
0.178
0.180
0.016
0.230
0.195
0.255
0.019
0.045
0.100 BSC
0.039 0.046
0.033 0.048
0.500
0.132 0.168
45° 8S"
CASE 82-05
3-83
-
MRD3010, MRD3011
ELECTRICAL CHARACTERISTICS
I
(T A = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Peak Blocking Current, Either Direction
(Rated VORM. Note I)
IORM
-
10
100
nA
Peak On-State Voltage, Either Direction
(lTM = 100 mA Peak)
Critical Rate of Rise of Off-State Voltage, Figure 3
Critical Rate of Rise of Commutation Voltage, Figure 3
VTM
-
2.5
3.0
Volts
-
0.15
-
-
1.0
0.5
5.0
2.0
mW/cm 2
100
-
I'A
Characteristic
DETECTOR CHARACTERISTICS IIF
•
(I load
=0
unless otherwise noted)
dv/dt
2.0
dv/dt
VII's
VII's
= 15mA)
OPTICAL CHARACTERISTICS
Maximum Irradiance Level Required to Latch Output
(Main Terminal Voltage 3.0 V. RL = 150 n) MR03010
Color Temperature = 2870 0 K
MR03011
HFT
Holding Current, Either Direction
IH
Initiating Flux Density =- 5.0 mW/cm 2
NOTE 1. Test voltage must be applied within dv/dt rating.
FIGURE 2 - dv/dt TEST CIRCUIT
FIGURE 1 - ON-STATEJ:;HARACTERISTICS
+800
O~tPut IpUISeIWjdt~::
80 1/.1$
H - 5 mW/cm 2 @ 2S70oK
;;.g +400 (-I-SOH,
TA' 25°C
>-
t-
./
V
V I-
V
a'i
:::
a
V
w
/
"
t;;
z
o
:E -400
. . . .V
,!:-
l- V
-800
V
n n n n
-14 -12 -10 -S.O -6.0 -4.0 -2.0
0
2.0 4.0 S.O
8.0
10
12
I
14
t--
VTM. ON·STATE VOLTAGE (VOLTS)
FIGURE 3 -
~1.2
--
Commutating ,.,.
./"
O.S
../
I--
--
---
~ .i! 1.6
0.16 ;, 2:
u
0
;::
« 1.2
c: to
''""
0,12 ~
0.08
0.4
o
z
'"
~
~l
.;; 0.8
O.S
1.2
1.6
- - - Static dv/dt
- - Commutating dv/dt
Circuit in Figure 2
- ........
-
25
;:
0,12 ~
i"-;:;
~
Z
- - - - - -- r::..'-r-.........
RL-510!l
I
I
0,08
.........
40
o
50
SO
70
SO
90
~
[
0.04
I I
30
TA. AMB!ENTTEMPERATURE (OC)
3·84
a:
.,o
0.16~
I':::..
I
I--!-
o
2.0
RL. LOAD RESISTANCE (kn)
0.20
......
RL -2k;;"
0.4
0.04
0.4
dv/dt-t
I"..
'"
I--""
dv/dt
0.24
2.0
0.20
Vi.-lOV RMS
Test Circuit in Figure 2
I
Commutating -I-St8tiC
24
Static
2.0
~
10 k
FIGURE 4 - dv/dt varsus TEMPERATURE
m/dt varsus LOAD RESISTANCE
0.24
Z; 1.6
_
dv/dt == 8.9 f V in
2.4
'".i!>
+5 V
J U U U L-.5 ov
100
MRD3010, MRD3011
FIGURE 6 - MAXIMUM NONREPETITIVE SURGE CURRENT
FIGURE 5 - COMMUTATING dv/d' ••rsus FREQUENCY
000
I dv/d,; o:i5v7;;S
Test Circuit in Figure 2
dv/dt:: 8.9 Vinf
R = 1 kll
if
~
3.0
HIJJ~ III IIII
r-- ITi
H =5.0 mW/cm 1 @1870oK
....
~
B2.0
"'
~
- -- -
-I--
iil
'"~
10
1.0
~
o
1.0
1110
0
1000
0.01
10:000
0.1
1.0
PW, PULSE WIDTH (m,)
f, MAXIMUM OPERATING FREQUENCY (Hz)
RESISTIVE LOAD
INDUCTIVE LOAD
180
180
120 V
R
60 Hz
Cl
2
TRIAC 'GT < 15 rnA
R = 2.4 k
C1 "" 0.1 J1.F
TRIAC 'GT> 15mA
R = 1.2 k.{l
C1=O.2/J- F
3·85
10
100
•
®
MRD30S0,MRD30S1,
MRD30S4,
MRD30SS,MRD30S6
MOTOROLA
NPN SI LICON PHOTO TRANSISTORS
30 VOLT
PHOTO TRANSISTORS
NPN SILICON
· .. designed for application in industrial inspection, processing and
control, counters, sorters; switching and logic circuits or any design
requiring radiation sensitivity, and stable characteristics.
•
•
Hermetic Package at Economy Prices
• Popular TO-1S Type Package for Easy Handling and Mounting
• Sensitive Throughout Visible and Near Infrared Spectral Range
for Wider Appl ication
•
Range of Radiation Sensitivities for Design Flexibility
•
External Base for Added Control
• Annular Passivated Structure for Stability and Reliability
MAXIMUM RATINGS
ITA = 25°C unless otherwise noted I
Rating
Svmbol
Value
Unit
Collector-Emitter Voltage
VCEa
30
Volts
Emitter-Collector Voltage
VECa
5.0
Volts
Collector-Base Voltage
VCBa
40
Volts
Po
400
2.28
mW
mW/oC
TJ,Tstg
-65 to +200
°c
Total Power Dissipation @ T A:::: 2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Range
SEATING
PLANE
STYLE 1:
PIN 1. EMITTER
2. BASE
THERMAL CHARACTERISTICS
3.
Characteristic
COLlECTOR~
~'1'
G
Thermal Resistance, Junction to Ambient
M
0
VCC = 20 V
7
SOURCETEMP- 28700 K
41-- TUNGSTEN SOURCE
TYPICAL CURVE FOR MRD3056
1
8
5
2
/'
0
0
0
0
./
./'
2.0
V
/
V
1/
V
lL
NOTES:
1. lEADS WITHIN .13 mm (.005) RADIUS
OF TRUE POSITION AT SEATING
PLANE. AT MAXIMUM MATERIAL
CONDITION.
2. PIN 3 INTERNALLY CONNECTED TO
CASE.
DIM
A
S
C
D
F
G
L
H
J
K
L
4.0
6.0
8.0
10
12
14
16
18
H. RADIATION FLUX DENSITY ImW/cm21
20
~~J
M
MILLIMETERS
MIN
MAX
5.31
4.52
4.57
0.41
5.84
4.95
6.48
0.48
1.14
2.54 SSC
0.99 1.17
0.84 1.22
12.70
3.35 4.01
45 SSC
INCHES
MIN
0.209
0.178
0.180
0.016
CASEB2·05
3-86
MAX
0.230
0.195
0.255
0.019
0.045
0.100 SSC
0.039 0.046
0.033 0.048
0.500
0.132 0.158
45'
MRD3050, MRD3051, MRD3054, MRD3055, MRD3056
STATIC ELECTRICAL CHARACTERISTICS
ITA
= 25°C
unless otherwise notedl
Characteristic
Svmbol
Collector Dark Current
IVce = 20 V, RL = 1.0 Megohm, Note 21 TA
TA
ICED
Unit
Min
TVp
Max
-
0.02
5.0
0.1
VIBRICBO
40
100
-
Volts
Collector-Emitter Breakdown Voltage
!lC= 100l'AI
VIBRICEO
30
75
-
Volts
Emitter-Collector Breakdown Voltage
!IE = 100 "AI
VIBRIECO
5.0
8.0
-
Volts
Min
TVp
Max
= 25°C
=85°C
Collector·Base Breakdown Voltage
"A
-
!lC= 100l'AI
OPTICAL CHARACTERISTICS
(TA = 250 e unless olherwise nOledl
Characteristic
Collector-Light Current
fVee= 20 V, RL = 100 ohms, Note 11
Fig. No.
Svmbol
1
IL
MRD3050
MRD3051
MRD3054
MRD3055
MRD3056
mA
0.1
0.2
0.5
1.5
2.0
I'S
I'S
tr
2.0
-
I'S
tf
-
2.5
-
I'S
As
-
0.8
-
I'm
'ffsa'l
Photo Current Rise Time (Note 4)
4
Pholo Current Fall Time (Note 41
4
Wavelength of Maximum Sensitivity
-
2. Measured under dark conditions. (H ~O).
1.0
-
-
8.0
-
'rfsatl
4
3. For saturated switching time measurements, radiation is pra..
vided by a pulsed xenon arc lamp with a pulse width of
-
-
1.0
4
Photo Current Saturated Fall Time (Note 3)
a tungsten source at a color temperature of 2870 o K.
-
-
Photo Current Saturated Rise Time (Note 3)
NOTES:
1. Radiation flux density fHI equal to 5.0 mW/cm 2 emitted from
Unit
approximately 1.0 microsecond (see Figure 41.
4. For unsaturated switching time measurements, radiation is provided by a pulsed GaAs (gallium-arsenide) light-emitting diode
()F:::0.9/olrn) with a pulse width equal to or greater than 10 microseconds (see Figure 41.
3-87
•
MRD3050. MRD3051. MRD3054. MRD3055. MRD3056
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 - COLLECTOR EMITTER
FIGURE 3 - PHOTOCURRENT.arusTEMPERATURE
CHARACTERISTICS - MRD3056
0
8 t-
!...
•
12
~
10
:='"
8. 0
~
~
6. 0
'"
4. 0
o
-
4
ffi
I
I
~~~:~:~~;~:~~OOK
6
/r-I
NORMALzED TO T
....
H =10mW/cm2
~
L--
.-'
::0
COLECTOR'EMITTER
~
~ 1.0
510
'"
W
N
I
r
-'-
VCC = 20V
NOTE I
250 C
1.5
'"'"
I
I
t--
f:
2.0
;:;
«
~ 0.5
o
z
) 0 - t---
---- -- ---- --
~
.'
1,..- .......
_.-'
COLLECTOR·BASE
1.0- t---
2. 0
0
5.0
10
15
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
25
·50
25
·25
50
75
TA. AMBIENT TEMPERATURE (DC)
FIGURE 4 - PULSE RESPONSE TEST CIRCUIT AND WAVEFORM
VCC
+20V
0.1 V -
-
-
-,.------..
--------90%
h.
N.C.
'"
o------'H
j=
1.OmA
PEAK
I
t
RL
=lOon
OUTPUT
FIGURE 5 - DARK CURRENT versus TEMPERATURE
0
=
VCE=20V
H=O
0
0
.1
0.0 1
-40
-20
20
40
TA. AMBIENTTEMPERATURE (DC)
3·88
60
DO
100
100
MRD3050, MRD3051, MRD3054, MRD3055, MRD3056
TYPICAL CIRCUIT APPLICATIONS
(Extracted from Motorola Application Note AN-50S, "Applications of Phototransistors in Electro-Optic Systems")
FIGURE 7 - LIGHT OPERATED SCR ALARM USING
SENSITIVE-GATE SCR
FIGURE 6 - STROBE F LASH SLAVE ADAPTER
9-2S V
11111----.-----0
+
al
18k
MR030S0/MR030S6
INPUT TO STROBE
FLASH UNIT
100 mH
RFC
Sl
MRD
30S0
Rl
1.2k
1.0 k
a2
2NS064
+
FIGURE 8 - CIRCUIT DIAGRAM OF VOLTAGE REGULATOR FOR PROJECTION LAMP.
80Vrms
at and 112:
±O.S%
MPS6516
113: MRD3054
Input
lOS to
180 Vac
R3
Output Adj.
Potentiometer
IRang. 50-80 V)
RS
7.5 k/2 W
R6
2.0 k
SCR
2N4444'
R2
3.3 k/l W
'"2N4444 to be ~sed with a heat sink.
3-89
•
®
OPTO
COUPLERS/ISOLATORS
MOTOROLA
PHOTOTRANSISTOR AND PHOTODARLINGTON
OPTO COUPLERS
Transistor Couplers
Extensive series of popular industry couplers in the standard
dual·in-line plastic package.
•
•
High Isolation Voltage - 7500 V
All Motorola couplers are specified at 7500 V ac peak (5
seconds). This usually exceeds the originator's specification.
•
Specifications Correspond to Originator's Specifications
All parameters other than isolation voltages are tested to the
originator's specifications (both condition and limits). including
parameters which may not be shown on this data sheet.
•
UL Recognition, File No. E54915
All Motorola devices shown here are U L Recognized.
H11A1. 2. 3. 4. 5
H11A520.550.5100
IL 1. 12. 15. 74
MCT2. 2E. 26
MCT271. 272. 273
MCT274. 275. 277
TIL 111. 112. 114. 115
TIL 116. 117
TIL124. 125. 126
TIL153.154.155
Darlington Couplers
TILI19. 128. 157 ONLY
ALL OTHERS
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. NC
STYLE I:
PIN I. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
NOTES:
I. DIMENSIONS A AND S ARE DATUMS.
2.·T IS SEATING PLANE.
3. POSITIONAL TOLERANCES FOR LEADS:
f4}i0 0.1}10005)®i T A@iB®i
I
4. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL
5. DIMENSIONING AND TOLERANCING PER
ANSI YI4.5. 1973.
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.92
5.08
0.41
0.51
1.02
1.78
2.54 BSC
J
0.20
0.30
K 2.54
3.81
L
7.62 SSC
DIM
A
8
C
D
F
G
M
00
H11Bl.2.3.255
MCA230. 231. 255
TIL113.119.127.128
TIL156.157
INCHES
MIN
MAX
0.320 0.350
0.240 0.260
0.115 0.200
0.016 0.020
0.040 0.070
0.100 SSC
0.008 0.012
0.100 0.150
0.300 ssc
150
00
_l~
N 0.38
2.54
0.0151 0.100
~ 127 L~()3'_ O,050~ tJ,,080
CASE 730A·OI
CASE 730A-Ol
PLASTIC PACKAGE
3-90
OPTO COUPLERS ISOLATORS
ELECTRICAL CHARACTERISTICS (TA 25'C unless otherwise notedl
. -..
--_.------0
PARAMETER
.-----
-~-~.--
~---
Isolation
Ratio
Voltage (1)
Dark
Saturation
Voltage
Current
-~
TEST
CONDITION
f--.
IF and _~CE as shC?wn
Input to Output
CTR
VISO
f------~
%
Volts Peak
1----
IF and
Ie as
s~~~~
VCEISAT)
Volts , -_ _
=0
IF
VeE as shown
f---.ICEO
nA
---
Ie as shown
Max
IF
rnA
IC
rnA
Max
Volts
HllAl
HllA2
HllA3
HllA4
HllA5
HllA520
HllA550
HllA5100
50
20
20
10
30
20
50
100
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
7500
7500
7500
7500
7500
7500
7500
7500
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
10
10
10
10
10
20
20
20
0.5
0.5
05
05
05
2.0
2.0
2.0
50
50
50
50
100
50
50
50
10
10
10
10
10
10
10
10
30
30
30
30
30
30
30
30
10
HllBl'
HllB2'
HllB3'
Hll B255'
500
200
100
100
10
1.0
1.0
10
5.0
5.0
5.0
5.0
7500
7500
7500
7500
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
-
--
100
100
100
100
10
10
10
10
25
25
25
55
ILl
ILl2
IL15
IL74
20
10
60
12.5
10
10
10
16
10
5.0
10
50
7500
7500
7500
7500
0.5
16
-
-
05
0.5
50
16
10
50
5.0
5.0
MCA230'
MCA231'
MCA255'
100
200
100
10
1.0
10
5.0
1.0
5.0
7500
7500
7500
1.0
1.2
10
50
10
50
50
250
20
100
2.0
500
- - - - f- -100
50
100
50
100
50
10
10
10
20
20
6.0
45
75
125
225
70
100
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
7500
7500
7500
7500
7500
7500
7500
7500
7500
0.4
0.4
0.5
0.4
0.4
0.4
0.4
0.4
16
16
60
16
16
16
16
16
8.0
20
300
8.0
2_0
20
50
300
10
20
50
300
300
10
20
50
300
300
16
10
10
16
10
10
10
10
10
10
10
0.4
5.0
1.0
0.4
5.0
10
10
2.0
10
10
10
1.0
2.0
10
10
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
0.4
0.5
1.0
0.4
0.5
0.4
0.4
1.0
0.4
0.4
0.4
1.0
1.0
0.4
0.4
0.4
10
10
I-----~---
TIL111
TIL112
Till 13'
TIL 114
TIL 115
TIL 116
TIL 117
Till t9'2
TIL 124
TIL125
TIL126
TIL 127'
TlL128,2
TIL 153
TIL154
TIL155
TIL156'
TIL157'2
VCE
Min
Max
IC
- - - f--'--- f - - - -
r----
---
10
10
10
10
10
10
10
10
1.0
2.0
-
-----
--
-
16
50
125
16
50
15
10
10
10
10
10
50
10
10
10
10
50
10
-
1----
1.6
-
2.0
2.0
16
2.0
2.0
2.0
2.0
2.0
2.0
2.0
50
2.0
2.0
2.2
0.5
10
1.0
1.0
1.0
125
10
1.0
1.0
1.0
125
10
3-91
10
10
10
10
10
10
10
10
10
10
10
10
10
~1~_
10
10
10
0.1
1.5
1.5
1.5
1.5
10
10
50
20
30
20
30
20
1.0
10
1.0
1.0
1.5
15
15
1.75
60
10
60
10
30
30
55
0.1
1.0
0.1
1.5
1.5
1.5
20
20
20
--
- - - - - f-----
-- - - - ----
---
50
50
100
50
50
50
50
50
50
10
10
5.0
10
10
10
10
10
10
30
30
30
30
30
30
30
80
30
1.0
1.0
10
1.0
1.0
1.0
1.0
1.0
1.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1 5
1.5
20
20
20
20
20
20
20
20
20
50
100
100
50
100
50
50
100
50
50
50
100
100
50
50
50
100
100
10
5.0
10
10
5.0
10
10
10
10
10
10
10
10
10
10
10
10
10
30
20
30
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
1.0
10
1.0
1.0
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
1.0
1.0
1.4
1.5
15
1.4
15
1.5
1.4
1.5
1.4
1.4
1.4
1.5
1.5
1.4
14
14
1.5
1.5
16
10
*Darlington
(1) Isolation Surge Voltage ViSa, is an internal device dielectric breakdown rating.
For this test LED pins 1 and 2 are common and phototransistor pins 4, 5, and 6 are common.
(2) See Case 730A-Ol, Style 3.
IF
rnA
1.5
15
15
1.5
1.7
1.5
1.5
1.5
10
-~-
1 - - - - - - - f------ , - - - - -
-------
VF
- - - ~ __\Iol!~_
Min
MCT2
MCT2E
MCT26
MCT271
MCT272
MCT273
MCT274
MCT275
MCT277
IF as shown
Volts
- - - - 1----
Volts
--
Voltage
VIBR)CEO
IF
rnA
VCE
Forward
=0
Min
Device Type
------
lED
_ . _ - - - - - - - - - - - - f--------IF
SYMBOL
-CollectorEmitter
Breakdown
Voltage
Collector
Current
Transfer
10
16
10
60
16
10
10
10
10
10
10
10
10
10
10
10
•
•
3-92
OPTOELECTRONICS
Applications Information
•
AN·440
,
THEORY AND CHARACTERISTICS
OF PHOTOTRANSISTORS
Prepared By:
John Bliss
•
INTRODUCTION
Photo transistor operation is based on the sensitivity of
a pn junction to radiant energy. If radiant energy of proper wave-length is made to impinge on a junction, the current through that junction will increase. Thisoptoelectronic
phenomenon has provided the circuit designer with a device
for use in a wide variety of applications. However, to
make optimum use of the phototransistor, the designer
should have a sound grasp of its operating principles and
characteristics.
PHOTO EFFECT IN SEMICONDUCTORS
Bulk Crystal
If light of proper wavelength impinges on a semiconductor crystal, the concentration of charge carriers is found
to increase. Thus, the crystal conductivity will increase:
(2)
a=q(Jlen+!LhP),
where a is the conductivity,
q is the electron charge,
!Le is the electron mobility,
!Lh is the hole mobility,
n is the electron concentration, and
p is the hole concentration.
HISTORY
The first Significant relationships between radiation and
electricity were noted by Gustav Hertz in 1887. Hertz observed that under the influence of light, certain surfaces
were found to liberate electrons.
In 1900, Max Planck proposed that light contained
energy in discrete bundles or packets which he called
photons. Einstein formulated this theory in 1905, showing that the energy content of each proton was directly
proportional to the light frequency:
E= hf,
where E is the photon energy,
h is Planck's constant, and
f is the light frequency.
The process by which charge-carrier concentration is
increased is shown in Figure I. The band structure of the
semiconductor is shown, with an energy gap, or forbidden
region, of Eg electron volts. Radiation from two light
sources is shown striking the crystal. Light frequency f I
is suffiCiently high that its photon energy, hfl, is slightly
greater than the energy gap. This energy is transferred to
a bound electron at site one in the valence band, and the
electron is excited to a higher energy level, site one in the
conduction band, where it is free to serve as a current
carrier. The hole left behind at site one in the valence band
is also free to serve as a current carrier.
The photon energy of the lower-frequency light, hf2,
is less than the band gap, and an electron freed from site
two in the valence band will rise to a level in the forbidden
region, only to release this energy and fall back into the
valence band and recombine with a hole at site three.
The above discussion implies that the energy gap, Eg,
represents a threshold of response to light. This is true,
however, it is not an abrupt threshold. Throughout the
photo-excitation process, the law of conservation of mo-
(I)
Planck theorized that a metal had associated with it a
work function, or binding energy for free electrons. If a
photon could transfer its energy to a free electron, and
that energy exceeded the work function, the electron could
be liberated from the surface. The presence of an electric
field could enhance this by effectively reducing the work
function. Einstein extended Planck's findings by showing
that the velocity, and hence the momentum of an emitted
electron, depended on the work function and the light
frequency.
4-2
CONDUCTION
Photons create hole-electron pairs in the crystal on both
sides of the junction. The transferred energy promotes
the electrons into the conduction band, leaving the holes
in the valence band. The applied external bias provides an
electric field, 6, as shown in the figure. Thus the photoinduced electrons in the p-side conduction band will flow'
down the potential hill at the junction into the n-side and
from there to the external circuit. Likewise, holes in the
valence band of the n-side will flow across the junction
into the p-side where they will add to the external current.
BAND
~LG
(3)"
VALENCE
BAND
100
!!
1
80
i
!
>-
f-
FIGURE 1 - Photoeffect in a Semiconductor
mentum applies. The· momentum and density of holeelectron sites are highest at the center of both the valence
and conduction bands, and fall to zero at the upper and
lower ends of the bands. Therefore, the probability of an
excited valence-band electron finding a' site of like momentum in the conduction band is greatest at the center
of the bands and lowest at the ends of the bands. Consequently, the response of the crystal to the impinging light
is found to rise from zero at a photon energy of Eg electron
volts, to a peak at some greater energy level, and then to
fall to zero again at an energy corresponding to the difference between the bottom of the valence band and the top
of the conduction band.
The response is a function of energy, and therefore of
frequency, and is often given as a function of reciprocal
frequency, or, more precisely, of wave length. An example
is shown in Figure 2 for a crystal of cadmium-selenide. On
the basis of the information given so far, it would seem
reasonable to expect symmetry in such a curve; however,
trapping centers and other absorption phenomena affect
the shape of the curve 1.
.
The optical response of a bulk semiconductor can be
modified by the addition of impurities. Addition of an
acceptor impurity, which will cause the bulk material to
become p-type in nature, results in impurity levels which
lie somewhat above the top of the valence band. Photoexcitation can occur from these impurity levels to the conduction band, generally resulting in a shifting and reshaping
of the spectral response curve. A similar modification of
response can be attributed to the donor impurity levels in
n-type material.
If}
I
SEMICONDUCTOR CR.YSTAL ENERGY STRUCTURE
>
;:
iii
z
w
'">w
;:
«
..J
60
/
40
w
a:
.0
20
o
4000
\
l/
5000
~
I
I
\
8000
o
A. WAVELENGTH (AI
6000
•
1\
7000
9000
10.000
FIGURE 2 - Spectral Response of Cadmium Selenide
p
SIDE
CONDUCTION BAND
N
SIDE
CONDUCTION BANO
JUNCTION
I
~I
~FLOW
I
•
PN Junctions
If a pn junction is exposed to light of proper frequency,
the current flow across the junction will tend to increase.
If the junction is forward-biased, the net increase will be
relatively insignificant. However, if the junction is reversebiased, the change will be quite appreciable. Figure 3 shows
the photo effect in the junction for a frequency well within
the response curve for the device.
L.-------illlll------'W~---'
VRB
FIGURE 3 - Photo Effect in a Reverse-8iased PN Junction
1. See references for a detailed discussion of these.
4-3
100
Under dark conditions, the current flow through the
reverse-biased diode is the reverse saturation current, 10 .
This current is relatively independent of the applied voltage (below breakdown) and is basically a result of the
thermal generation of hole-electron pairs.
When the junction is illuminated, the energy transferred from photons creates additional hole-electron pairs.
The number of hole-electron pairs created is a function of
the light intensity.
For example, incident monochromatic radiation of H
(watts/cm 2) will provide P photons to the diode:
P = XH
hc '
~
>
!:::
~
I-
0;
~
40
/
I~
...J
W
II:
.;
(3)
20
o
/
/
/ V\
!\
V
\
/
0.2
h is Planck's constant, and
0.4
0.6
1.0
0.8
1.2
1.4
1<.. WAVELENGTH (I'mi
c is the velocity of light.
The increase in minority .carrier density in the diode
will depend on P, the conservation of momentum restriction, and the reflectance and transmittance properties of
the crystal. Therefore, the photo current, lX, is given by
IX =1) F qA,
60
Z
w
rn
w
where Xis the wavelength of incident light,
•
80
FIGURE 4 - Spectral Response of Silicon Photodiode
(4)
where 1) is the quantum efficiency or ratio of current carriers to incident photons,
G
F is the fraction of incident photons transmitted by the crystal,
q is the charge of an electron, and
A is the diode active area.
Thus, under illuminated conditions, the total current
flow is
1= 10 + IX.
FIGURE 5 - Approximate Model of Photodiode
(5)
Photo Transistor
If the pn junction discussed above is made the collectorbase diode of a bipolar transistor, the photO-induced current is the transistor base current. The current gain of the
transistor will thus result in a collector-emitter current of
If IX is sufficiently large, 10 can be neglected, and by
using the spectral response characteristics and peak spectral
sensitivity of the diode, the total current is given approximately by
Ie = (hfe + 1) lX,
(6)
(7)
where Ie is the collector current,
where 8 is the relative response and a function of radiant
wavelength,
hfe is the forward current gain, and
IX is the photo induced base current.
SR is the peak spectral sensitivity, and
H is the incident radiation.
The base terminal can be left floating, or can be biased up
to a desired quiescent level. In either case, the collectorbase junction is reverse biased and the diode current is the
reverse leakage current. Thus, photo-stimulation will result in a significant increase in diode, or base current, and
with current gain will result in a significant increase in
collector current.
The energy-band diagram for the photo transistor is
shown in Figure 6. The photO-induced base current is
returned to the collector through the emitter and the external circuitry. In so doing, electrons are supplied to the
base region by the emitter where they are pulled into the
collector by the electric field e.
The spectral response for a silicon photo-diode is given
in Figure 4.
Using the above relations, an approximate model of the
diode is given in Figure 5. Here, the photo and thermally
generated currents are shown as parallel current sources.
e represents the capacitance of the reverse-biased junction
while G represents the equivalent shunt conductance of
the diode and is generally quite small. This model applies
only for reverse bias, which, as mentioned above, is the
normal mode of operation.
4-4
EMITTER
BASE
In most cases r'b « rbe, and can be neglected. The
open-base operation is represented in Figure 8. Using this
model, a feel for the high-frequency response of the device
may be obtained by using the relationship
COLLECTOR
N
ft""..!ll1·,
21TCe
(9)
where ft is the device current-gain-bandwidth product.
C
'------iI!I!If-----'lNV-----'
R
•
Ce
VCC
FIGURE 6 - Photoeffect in a Transistor
G
f
The model of the photo diode in Figure 5 might also be
applied to the photo transistor , however, this would be severely limited in conveying the true characteristics of the
transistor. A more useful and accurate model can be obtained by using the hybrid-pi model of the transistor and
adding the photo-current generator between collector and
base. This model appears in Figure 7.
Assuming a temperature of 25 0 C, and a radiation source
at the wave length of peak response (Le., 5 = I), the following relations apply:
IX"" SRCBO . H,
(8a)
gm =40 ic , and
(8b)
rbe = hfe/gm,
(8c)
t
Vbe
Co
1
E
FIGURE 8 - Floating Base Approximate Model of Phototransistor
STATIC ELECTRICAL CHARACTERISTICS
OF PHOTOTRANSISTORS
Spectral Response
As mentioned previously, the spectral response curve
provides an indication of a device's ability to respond to
radiation of different wave lengths. Figure 9 shows the
spectral response for constant energy radiation for the
Motorola MRD300 photo transistor series. As the figure
indicates, peak response is obtained at about 8000 A
(Angstroms), or 0.8 /Lm.
where SRCBO is the collector-base diode radiation sensitivity with open emitter,
gm is the forward transconductance,
ic is the collector current, and
rbe is the effective base-emitter
resistance.
100
£w
m
1/ '\
80
z
0
0-
m
w
ce
rb'
60
V
a:
B
./
w
>
40
>=
<{
..J
rbe
ce
1·
W
m
a:
G
Vb.
\
\
1\
/
\
.;
••
E o-------~--~------+-------~
20
I
0
0.4
__
OE
0.5
0.6
0.7
0.8
0.9
1.0
1.1
~, WAVELENGTH (I'm)
FIGURE 7 - Hybrid'pi Model of Phototransistor
FIGURE 9 - Constant Energy Spectral Response for MRD300
4-5
1.2
•
FIGURE 10 - Polar Response of MRD300. Inner Curve with Lens. Outer Curve with Flat GI....
100
Angular Alignment
Lambert's law of illumination states that the illumination of a surface is proportional to the cosine of the angle
between the normal to the surface and the direction of
the radiation. Thus, the angular alignment of a phototransistor and radiation source is quite significant. The
cosine proportionality represents an ideal angular response.
The presence of an optical lens and the limit of window
size further affect the response. This information is best
conveyed by a polar plot of the device response. Such a
plot in Figure to gives the polar response for the MRD300
series.
!w
-
80
rn
Z
o
!l;
w
a:
60
>
40
W
20
w
;::
«
..J
a:
~
--
~
o
2500
2600
2700
2800
2900
SOURCE COLOR TEMPERATURE (ok)
FIGURE 12 - Relative Response of MRD300
versus Color Temperature
500
DC Current Gain
The sensitivity of a photo transistor is a function of the
collector-base diode quantum effiCiency and also of the dc
current gain of the transistor. Therefore, the overall sensitivity is a function of collector current. Figure 11 shows
the collector current dependence of dc current gain.
Z
~ t=
0.5
-
- --
1.5
;;; E
-'iii
6~
a
U(f)
4.0
2.0
0
6w
8.0
6.0
10
H"RADIATION FLUX DENSITY (mW/cm 2 )
u
a:
(f)
FIGURE 14 - Open Base Sensitivity versus Radiation for MRD300
Vcc= 20 V
r--
_
H = 5.0 mW/cm 2
SOURCE TEMP = 2870 0 K
~
~
I
_..
,
0
-'
-'
- - ---j
. . . .-
l
Y
U
a:
-
u
Z
20
w
r-
Ic- 250"A
-IC= 100"A
SWITCHING CHARACfERISTICS
OF PHOTOTRANSISTORS
::>
0
10
w
ex:
11.
r-
~
5.0
.,""'
..
t'"
- hfe
fb - I + hfe
2.0
f-1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
In switching applications, two important requirements
of a transistor are:
(I) speed
(2) ON voltage
Since some optical drives for photo transistors can provide fast light pulses, the same two considerations apply.
RL. LOAD RESISTANCE (kn)
Switching Speed
FIGURE 17 - 3 dB Frequency versus Load Resistance for MRD300
10
iii
~
8.0 ~
I\:
w
ex:
::>
~
6.0
u.
W
(/)
(5
4.0
\
,
IC=500"A
II L.-I"
Z
11.'
Z
Hfll
2.0
11~~~
o
0.1
1.0
10
100
RS. SOURCE RESISTANCE (k!l)
FIGURE 18 - MRD300 Noise Figure versus Source Resistance
Noise Figure
Although the usual operation of the photo transistor is
in the floating base mode, a good qualitative feel for the
device's noise characteristic can be obtained by measuring
noise figure under standard conditions. The I kHz noise
figure for the MRD300 is shown in Figure 18.
Small Signal h Parameters
As with noise figure, the small-signal h-parameters, measured under standard conditions, give a qualitative feel for
If reference is made to the model of Figure 8, it can be
seen that a fast rise in the current IX will not result in an
equivalent instantaneous increase in collector-emitter current. The initial flow of IX must supply charging current
to CCB and CBE. Once these capacitances have been
charged, IX will flow through rbe. Then the current generator, gm . Ybe, will begin to supply current. During turnoff, a similar situation occurs. Although IX may instantaneously drop to zero, the discharge of CCB and CBE
through rbe will maintain a current flow through the collector. When the capacitances have been discharged, Vbe
will fall to zero and the current, gm . Vbe, will likewise
drop to zero. (This discussion assumes negligible leakage
currents). These capacitances therefore result in turn-on
and turn-off delays, and in rise and fall times for switching
applications just as found. in conventional bipolar switching transistors. And, just as with conventional switching,
the times are a function of drive. Figure 21 shows the collector current (or drive) dependence of the turn-on delay
and rise times. As indicated the delay time is dependent on
the device only; whereas the rise-time is dependent on both
the device and the load.
If a high-intensity source, such as a xenon flash lamp,
is used for the optical drive, the device becomes optically
saturated unless large optical attenuation is placed between
source and detector. This can result in a significant storage
time during the turn off, especially in the floating-base
mode since stored charge has no direct path out of the
4-8
1000
30
700
z
10
~
J::
1.0
0.5
---
r--i1.0
2.0
3.0
5.0
10
Ie. COLLECTOR CURRENT (rnA)
IC. COLLECTOR CURRENT (mAl
FIGURE 19 - 1 kHz h-Parameters versus Collector Current for MRD300
----- ib
b+
f
vbe
base region. However, if a non-saturating source, such as
a GaAs diode, is used for switching drive, the storage, or
turn-off delay time is quite low as shown in Figure 22.
ic"'-
hie
+C
t
h re vee
hoe
Saturation Voltage
vee
An ideal switch has zero ON impedance, or an ON voltage drop ofzero. The ON saturation voltage of the MRD300
is relatively low, approximately 0.2 volts. For a given collector current, the ON voltage is a function of drive, and is
shown in Figure 23.
(al Hybrid Model
APPUCATIONS OF PHOTOTRANSISTORS
As mentioned previously, the phototransistor can be
used in a wide variety of applications. Figure 24 shows
two photo transistors in a series-shunt chopper circuit. As
QI is switched ON, Q2 is OFF, and when Ql is switched
OFF, Q2 is driven ON.
Logic circuitry featuring the high input/output electrical
isolation of photo transistors is shown in Figure 25.
Figure 26 shows a linear application of the phototransistor. As mentioned previously, the linearity is obtained
for small-Signal SWings.
bCl-----~VV~-----.--~--~~-4----__oC
'e
(bl r-Parameter Model
FIGURE 20 - Low Frequency Analvtical Modols of Phototransistor
Without Photo Currant Generator
4-9
0
VCC=20V-
7. 0
I-
9.0
5. 0
0
~
8.0
3. 0
2. 0
!w
:ii
1.0
>=
,;
O. 7
..J
w
r-- I - 1-1-
--
Cl
=1
t r @ RL
"-
«
kSl
7.0
I..J
0
>
6.0
w
II-
,5.0
w
4.0
a:
r-
le= 5.0mA
~
~@RL=100n
Ii:
1.0mA
0
IU
......
......
O. 5
•
10
Iii
........
3.0
C.5mA
W
..J
..J
2.0
0
\
U
.....
W
~(//JRL=100n-
or 1 kn
O. 3
U
>
1.0
0
0.3
0.5
1.0
1""' ....
2.0
-
5.0
.........
10
-
20
30
H. IRRAOIANCE (mW/cm2)
O. 2
FIGURE 23 - Collmor Emitter Saturation Voltage
a. a Function of Irradianco for MRD300
O. 1
0.3
0.5
0.7
1.0
2.0
3.0
IC. COLLECTOR CURRENT (rnA)
FIGURE 21 - SwitlOhing D...., and Rise Tim.. for MRD300
°1
INPUT
5.0
" ) - - - - . - - -....- - 0 OUTPUT
VCC=20V3.0
2.0
~
tf
1.0
!w
:ii
0.7
0.5
FIGURE 24 - Serios-Shunt Chopper Circuit Using MRD300
Phototransistor. and GoA. Light Emitting Diodes (LED.I
>=
,;
0.3
0.2
0.1
J..,.....--
APPENDIX I
t,
~ ~-
0.07
0.05
0.3
0.5
0.7
1.0
2.0
3.0
IC. COLLECTOR CURRENT (rnA)
FIGURE 22 - Switching Storaga and Fall Times for MRD300
A double-pole, single-throw relay is shown in Figure 27.
In general, the phototransistor can be used in counting
circuitry, levelindications, alarm circuits, tachometers, and
various process controls.
Conclusion
The phototransistor is a light-sensitive active device of
moderately high sensitivity and relatively high speed. Its
response is both a function of light intensity and wavelength, and behaves basically like a standard bipolar transistor with an externally controlled collector-base leakage
current.
Radiant energy covers a broad band of the electromagnetic spectrum. A relatively small segment of the band is
the spectrum of visible light. A portion of the electromagnetic spectrum including the range of visible light is shown
in Figure I-I.
The portion of radiant flux, or radiant energy emitted
per unit time, which is visible is referred to as luminous
flux. This distinction is due to the inability of the eye to
respond equally to like power levels of different visible
wavelengths. For example, if two light sources, one green
and one blue are both emitting like wattage, the eye will
perceive the green light as being much brighter than the
blue. Consequently, when speaking of visible light ofvarying color, the watt becomes a poor measure of brightness.
A more meaningful unit is the lumen. In order to obtain
a clear understanding of the lumen, two other definitions
are required.
The first of these is the standard source (Fig. 1-2). The
standard source, adopted by international agreement, con-
4-10
sists of a segment of fused thoria immersed in a chamber
of platinum. When the platinum is at its melting point,
the light emitted from the chamber approximates the radiation of a black body. The luminous flux emitted by the
source is dependent on the aperture and cone of radiation.
The cone of radiation is measured in terms of the solid
angle.
The concept of a solid angle comes from spherical geometry. If a point is enclosed by a spherical surface and a
set of radial lines define an area on the surface, the radial
lines also subtend a solid angle. This angle, w, is shown in
Figure 1-3, and is defined as
Vee
~
B
HIGH ISOLATION OR GATE
A
Vee
w=-2 '
(I-I)
r
J
J
where A is the described area and r is the spherical radius.
If the area A is equal to r2, then the solid angle subtended is one unit solid angle or one steradian, which is
nothing more than the three-dimensional equivalent of a
radian.
With the standard source and unit solid angle established, the lumen can be defined.
A lumen is the luminous flux emitted from a standard
source and included within one steradian.
Using the concept of the lumen, it is now possible to
define other terms of illumination.
Illuminance
If a differential amount of luminous flux, dF, is impinging on a differential area, dA, the illuminance, E, is given
by
HIGH ISOLATION AND GATE
FIGURE 25 - Logic Circuits Using the MRD300 and LEOs
E=
, - - - - 1 - - - 0 +V
INFRARED
f
~l'::
(1-2)
dA
VISIBLE
ULTRAVIOLET
~
X-RAY
r~-~I--~A~--G-A-M-M~~ARAY
~
104
L - - - 4_ _ _0 -V
WAVELENGTH "IN NANOMETERS (MILLIMICRONS)
FIGURE 26 - Sma" Signal Linear Amplifier
Using MRD300 and LEOs
FIGURE 1-1 - Portion of Electromagnetic Spectrum
Illuminance is most often expressed in lumens per square
foot, or foot-candles. If the illuminance is constant over
the area, (1-2) becomes
"~L-___
OU_TPUT
E= FlA.
INPUT
__
(1-3)
Luminous Intensity
------I'r~'_____
When the differential flux, dF, is emitted througi1 a differential solid angle, dw, the luminous intensity, I, is given
by
OU_TPUT
dF
1=dw
FIGURE 27 - DPST Relav Using MRD30Ds and LEOs
4-11
(1-4)
•
A
MOLTEN
PLATINUM
INSULATION
FUSED
THORIA
•
FIGURE 1-3 - Solid Angle, w
FIGURE 1-2 - International Standard Sou",e
Spectral Response: Sensitivity as a function of wavelength of incident energy. Usually normalized to
peak sensitivity.
Luminous intensity is most often expressed in lumens
per steradian or candela. If the luminous intensity is constant with respect to the angle of emission, (1-4) becomes:
I=!::.w·
Constants
(1-5)
Planck's constant: h = 4.13 X 10-15 eV-s.
q 1.60 X '10- 19 coulomb.
If the wavelength of visible radiation is varied, but the
illumination is held constant, the radiative power in watts
will be found to vary. This again illustrates the poor quality
of the watt as a measure of illumination. A relation between
illumination and radiative power must then be specified at
a particular frequency. The point of specification has been
taken to be at a w.avelength of 0.555 11m, which is the peak
of spectral response of the human eye. At this wavelength,
1 watt of radiative power is equivalent to 680 lumens.
electron charge:
velocity of light:
=
c = 3 X 108 m/s.
Illumination Convenion FactOR
Multiply
lumens/ft 2
lumens/ft 2 "
By
1
1.58 X 10-3
To Obtain
ft. candles
mW/cm 2
candlepower
411
lumens
"At 0.555 j.lm.
APPENDIX II
OPTOELECTRONIC DEFINITIONS
F,
Luminous Flux: Radiant flux of wavelength within
the band of visible light.
Lumen: The luminous flux emitted from a standard
source and included within one steradian (solid angle
equivalent of a radian).
H,
Radiation Flux Density (Irradiance): The total incident radiation energy measured in power per unit
area (e.g., mW/cm 2).
E,
Luminous Flux Density (l1luminance): Radiation
flux density of wavelength within the band of visible
light. Measured in lumens/ft 2 or foot candles. At
the wavelength of peak response of the human eye.
0.555I1m(0.555 X 1O-6m), I watt of radiative power
is equivalent to 680 lumens.
SR,
Radiation Sensitivity: The ratio of photo-induced
current to incident radiant energy, the latter measured at the plane of the lens of the photo device.
SI,
l1lumination Sensitivity: The ratio of photo-induced
current to incident luminous energy, the latter measured at the plane of the lens of the photo device.
BIBUOGRAPHY AND REFERENCES
I. Fitchen, Franklin C., Transistor Circuit Analysis and
Design, D. Van Nostrand Company, Inc., Princeton
1962.
2. Hunter, Lloyd P., ell., Handbook of Semiconductor
Electronics, Sect 5., McGraw-Hill Book Co., Inc., New
York 1962.
3. Jordan, A.G. and A.G. Milnes, "Photoeffect on Diffused
PN Junctions with Integral Field Gradients", IRE Transactions on Electron Devices, October 1960.
4. Millman, Jacob, Vacuum-tube and Semiconductor Electronics, McGraw-Hill Book Co., Inc., New York 1958.
5. Sah, C.T., "Effect of Surface Recombination and Channel on PN Junction and Transistor Characteristics",
IRE Transactions on Electron Devices, January 1962.
6. Sears, F.W. and M.W. Zemansky, University Physics,
Addison-Wesley Publishing Co., Inc., Reading, Massachusetts 1962.
7. Shockley, William, Electrons and Holes in Semiconductors, D. Van Nostrand Company, Inc., Princeton
1955.
4-12
AN·50S
APPLICATIONS OF PHOTOTRANSISTORS
IN ELECTRO-OPTIC SYSTEMS
INTRODUCTION
A phototransistor is a device for controlling current
flow with light. Basically, any transistor will function as a
phototransistor if the chip is exposed to light, however,
certain design techniques are used to optimize the effect
in a photo transistor.
Just as phototransistors call for special design techniques, so do the circuits that use them. The circuit
designer must supplement his conventional circuit knowledge with the terminology and relationships of optics and
radiant energy. This note presents the information necessary to supplement that knowledge. It contains a short
review of phototransistor theory and characteristics, followed by a detailed discussion of the subjects of irradiance,
illuminance, and optics and their significance to phototransistors. A distinction is made between low-frequency I
steady-state design and high-frequency design. The use of
the design information is then demonstrated with a series
of typical electro-optic systems.
In a phototransistor the actual carrier generation takes
place in the vicinity of the collector-base junction. As
shown in Figure 1 for an NPN device, the photo-generated
holes will gather in the base. In particular, a hole
generated in the base will remain there, while a hole
generated in the collector will be drawn into the base by
the strong field at the junction. The same process will
result in electrons tending to accumulate in the collector.
Charge will not really accumulate however, and will try to
evenly distribute throughout the bulk regions. Consequently, holes will diffuse across the base region in the
direction of the emitter junction. When they reach the
junction they will be injected into the emitter. This in
turn will cause the emitter to inject electrons into the
base. Since the emitter injection efficiency is much larger
than the base injection effeciency, each injected hole will
result in many injected electrons.
It is at this point that normal transistor action will
occur. The emitter injected electrons will travel across the
base and be drawn into the collector. There, they will
combine with the photo-induced electrons in the collector
to appear as the terminal collector current.
PHOTOTRANSISTOR THEORY'
Phototransistor operation is a result of the photo-effect
in solids, or more specifically, in semiconductors. Light of
a proper wavelength will generate hole-electron pairs
within the transistor, and an applied voltage will cause
these carriers to move, thus causing a current to flow. The
intensity of the applied light will determine the number of
carrier pairs generated, and thus the magnitude of the
resultant current flow.
Since the actual photogeneration of carriers occurs in
the collector base region, the larger the area of this region,
the more carriers are generated, thus, as Figure 2 shows,
the transistor is so designed to offer a large area to
impinging light.
h.v
\\
RL
'---.J\,/\/\,,.------t
hv
v
II
1------'
FIGURE 1 - Photo-Generated Carrier Movemant
in 8 Phototransistor
• For a detailed discussion see Motorola Application Note
AN-440, "Theory and CharacteristicsofPhototransistors."
FIGURE 2 - Tvpical Doubl.Diffusod Phototransistor Structura
4-13
•
In reality there is a thermally generated leakage
current, IQ' which shunts I).. Therefore, the terminal
current will be non-zero. This current, ICEO, is typically
on the order of 10 nA at ro~m temperature and may in
most cases be neglected.
As a three lead device, the model of Figure 3 need only
have a resistance, rb', 'connected to the junction of Cbc
and Cbe. The other end of this resistance is the base
terminal. As mentioned earlier, the three lead phototransistor is less common than the two lead version. The only
advantages of having the base lead available are to stabilize
the device operation for significant temperature excursions, or to use the base for unique circuit purposes.
Mention is often made of the ability to optimize a
photo transistor's sensitivity by using the base. The idea is
that the device can be electrically biased to a collector
current at which hFE is maximum. However, the introduction of any impedance into the base results in a net
decrease in photo sensitivity. This is similar to the effect
noticed when ICEO is measured for a transistor and found
to be greater than leER. The base-emitter resistor shunts
some current around the base-emitter junction, and the
shunted current is never multiplied by hFE.
Now when the phototransistor is biased to peak hFE,
the magnitude of base impedance is low enough to shunt
an appreciable amount of photo current around the
base-emitter. The result is actually a lower device sensitivity than found in the open base mode.
c
C ce
II
G
E
FIGURE 3 - Floating B... Approximate Modal of Phototranslstor
PHOTOTRANSISTOR STATIC CHARACTERISTICS
A phototransistor can be either a two-lead or a
three-lead device. In the three·lead form, the base is made
eleitrically available, and the device may be used as a
standard bipolar transistor with or without the additional
capability of sensitivity to light. In thetwo·lead form the
base is not electrically available, and the transistor can
only be used with light as an input. In most applications,
the only drive to the transistor is light, and so the
two·lead version is the most prominent.
As a two-lead device, the photo transistor can be
modeled as shown in Figure 3. In this circuit, current
generator I). represents the photo generated current and
is approximately given by
I). =1/FqA
Spectral Response - As mentioned previously, a
transistor is sensitive to light of a proper wavelength.
Actually, response is found for a range of wavelengths.
Figure 4 shows the normalized response for a typical
phototransistor series (Motorola MRD devices) and indicates that peak response occurs at a wavelength of 0.8
j.IlIl. The warping in the response curve in the vicinity of
0.6 j.IlIl results from adjoining bands of constructive and
destructive interference in the Si0 2 layer covering the
transistor surface.
(I)
where
100
1/ is the quantum efficiency or ratio of current carriers
to incident photons,
!w
F is the fraction of incident photons transmitted by
the crystal,
'"w
..'0Z"
60
II:
/"
w
>
40
w
20
t=
«
.J
q is the electronic charge~ and
II:
A is the active area.
"\
/
80
V
/
\
1\
/
\
.0
0
0.4
The remaining elements should be recognized as the
component distribution in the hybrid-pi transistor model.
Note that the model of Figure 3 indicates that under dark
conditions, I). is zero and so Vbe is zero. This means that
the terminal current I "" Sm VIle is also zero.
0.5
0.6
0.7
~.
0.8
0.9
1.0
1.1
WAVELENGTH (I'm)
FIGURE 4 - Constant Enargy Spectral RIIPonsa for MRD
Phototransistor Series
4-14
1.2
1 .0
.-:-:-r-~'~'~,-,~,~,~,~" .-~~-~~-~
VCC
~
20 V
sou RCE
TEMP = 2870 0 K
I-'
TUNGSTEN SOURCE
--I-·+IJ--r--+-....l.......1"Tl-I---+~
0.8
f.-k-"
f---I--
i'TYP.
f·
G
f-
0.1
0.2
0.5
1.0
10
5.0
2.0
20
H, RADIATION FLUX DENSITY (mW/cm 2 )
FIGURE 6 - Low·Frequency and Steady-State Model
FIGURE 5 - Radiation Sensitivity for MRD450
10 0
.,.~
IC
--
.-
Z
250 I'A
-IC~ 100llA
-
0
w
~
iJ fTf1tR:: _..
I"-
i--
u
-_.
.
. nIT
-
:>
aw
o C""_
r'\ t'-
-
II:
u.
co
:i!#m' --H11m ~f~'1"
I- .
O~
"
m
"
~
5. OJ---
M
2. 0
_.
..-
f::-
j:::-
-
_.
1.0
0.1
r
0.2
1.0
2.0
5.0
10
·lti
-tt1
~
20
~
60f--~--+_7L4--+--~-~_+--__j----
II:
w
>
H-
50
80 f--+Jf-\-J--__jf-
Z
oa.
·n
f-t ff
II
~
40f--47~--+~--j--+----+--~~--j---
I-
«
.J
t~ -~
_.
0.5
for Floating-Base Phototransistor
w
II:
20f-~H---+-\
100
~,WAVELENGTH
RL, LOAD RESISTANCE IknJ
Il'm)
FIGURE 8 - Spectral Response for Standard Observer and
FIGURE 7 - 3 dB Frequency versus Load Resistance for MRD
Phototransistor Series
MRD Series
kilohms. For larger loads, the hybrid-pi model must be
used.
F or the remainder of the discussion of low frequency
and steady state design, it is assumed that the simplified
model of Figure 6 is valid.
Radiation Sensitivity - The absolute response of the
MRD450 phototransistor to impinging radiation is shown
in Figure 5. This response is standardized to a tungsten
source operating at a color temperature of 2870 o K. As
subsequent discussion will show, the transistor sensitivity
is quite dependent on the source color temperature.
Additional static characteristics are discussed in detail
in AN-440, and will not be repeated here.
RADIATION AND ILLUMINATION SOURCES
The effect of a radiation source on a photo-transistor is
dependent on the transistor spectral response and the
spectral distribution of energy from the source. When
discussing such energy, two related sets of terminology are
available. The first is radiometric which is a physical
system; the second is photometric which is a physiological
system.
The photometric system defines energy relative to its
visual effect. As an example, light from a standard 60
watt-bulb is certainly visible, and as such, has finite
photometric quantity, whereas radiant energy from a
60-watt resistor is not visible and has zero photometric
quantity. Both items have finite radiometric quantity.
The defming factor for the photometric system is the
spectral response curve of a standard observer. This is
shown in Figure 8 and is compared with the spectral
response of the MRD series. The defining spectral response of the radiometric system can be imagined as unit
response for all wavelengths.
LOW-FREQUENCY AND STEADY-STATE DESIGN
APPROACHES
F or relatively simple circuit designs, the model of
Figure 3 can be replaced with that of Figure 6. The
justification for eliminating consideration of device
capacitance is based on restricting the phototransistor's
use to d.c. or low frequency applications. The actual
frequency range of validity is also a function of load
resistance. For example, Figure 7 shows a plot of the 3 dB
response frequency as a function of load resistance.
Assume a modulated light source is to drive the
phototransistor at a maximum frequency of 10 kHz. If
the resultant photo current is 100 jJ.A, Figure 7 shows a
3·dB frequency of 10kHz at a load resistance of 8
kilohms. Therefore, in this case, the model of Figure 6 can
be used with acceptable results for a load less than 8
4-15
A comparison of the terminology for the two systems
is given in Table I.
There exists a relationship between the radiometric and
photometric quantities such that at a wavelength of 0.55
j.I111, the wavelength of peak response fo r a standard
observer, one watt of radiant flux is equal to 680 lumens
of luminious flux. For a broadband of radiant flux, the
visually effective, or photometric flux is given by:
F = K f P(X)6 (A)dX
r is the distance between the source and the detector.
Figure 9 depicts a point source radiating uniformly in
every direction. If equation (3) is satisfied, the detector
area, AD, can be approximated as a section of the area of
a sphere of radius r whose center is the point source.
The solid angle, w, in steradians2 subtended by the
detector area is
(4)
(2a)
Since a sphere has a surface area of 41Tr2 , the total solid
angle of a sphere is
where
K is the proportionality constant (of 680 lumens/watt),
•
41Tr2
ws = - - = 41T steradians.
r2
P (X) is the absolute spectral distribution of radiant
flux,
Table II lists the design relationships for a point source
in terms of both radiometric and photometric quantities.
The above discussion assumes that the photodetector is
alligned such that its surface area is tangent to the sphere
with the point source at its center. It is entirely possible
that the plane of the detector can be inclined from the
6 (A) is the relative response of the standard observer,
and
dX is the differential wavelength,
A similar integral can be used to convert incident
radiant flux density, or irradiance, to illuminance:
E=K
J H(A)6(A)dX
TABLE I - Radiometric and Photometric Terminology
(2b)
In Equation(2b)if H (A) is given in watts/ cm2 , E will
be in lumens/ cm2 • To obtain E in footcandles (Iumens/ft 2 ), the proportionality constant becomes
K = 6.3 x lOs footcandles/mW/cm 2
Fortunately, it is usually not necessary to perform the
above integrations. The photometriC effect of a radiant
source can often be measured directly with a photometer.
Unfortunately, most photo transistors are speCified for
use with the radiometric system. Therefore, it is often
necessary to convert photometric source data, such as the
candle power rating of an incandescent lamp to radiometric
data. This will be discussed shortly.
Photometric
Radiant Flux, P, in Watts
Luminous Flux, F, in
Emitted Flux
Densityata
Radiant Emittance, W.
inWatts/an 2
Luminous Emittance. L.
in Lumens/ft l (footlambartsl, or lumansJ
Sourca Surface
cm 2 (Lamberts)
Suurce Intensity
(Point Sourcel
Radiant Intensity. I,.
in Watts/Steradian
Source Intensity
(Area Source)
Radiance, Br, in
Luminance, SL. in
IWattslSteradianl lem 2
ILumenslSteradian} Iftl
Ifootlambertl
Flux Density
Incident on a
Receiver Surface
Irradiance. H. in
Watts/em:!
~~':~:f~r'I~~~candlel
Luminous Intensity.IL.
in Lumens/Steradian
lcandela)
TABLE II-PointSourceReiationships
In the design of electro-optic systems, the geometrical
Description
Radiometric
Photometric
Point Source
Intensity
Ir.WattslSteradian
IL. LumenslSteradian
Incident Flux
Density
relationships are of prime concern. A source will effectively appear as either a point source, or an area source,
depending upon the relationship between the size of the
source and the distance between the source and the
detector.
Point Sources - A point source is defined as one for
which the source diameter is less than ten percent of the"
distance between the source and the detector, or,
< O.Ir,
Radiometric
Total Flux
Lumens
GEOMETRIC CONSIDERATIONS
0:
Description
HUrradiancel
Total Flux Output
of Point Source
"'7' watts!
distance l
P 411'I r Watts
EUliuminancel
l'
F - 4'11'IL Lumens
TABLE III - Design Relationship. for an Area Source
Description
Source Intensity
Radiometric
Br• Wattsfcm fsteradian
Photom .... ic
Emitted Flux
Oensity
W"'II'B r• Watts/an'2
L=lI'BL. Lumens/em'2
H =~
r2+~1 • Watts/em 2
E '"
Incident Flux
Density
(3)
BL.
L~menslem
is the diameter of the source, and
• Steradian: The solid equivalent of a radian.
4-16
I
~':~£:z. Lumenslcm l
where
0:
=
lumensldistance l
2
Point
Source (I)
AREA AD
Point Source Fliadleting
Uniformly in all Direction'
FIGURE 8 - Point Source Geometry
FIGURE 10 - Dotector Not Normal to Source Direction
tangent plane. Under this condition, as depicted in Figure
10, the incident flux density is proportional to the cosine
of the inclination angle, t/I. Therefore,
radiated energy, that is, unity coupling exists between
source and detector.
Ir
H =;tcost/l, and
LENS SYSTEMS
A lens can be used with a photodetector to effectively
increase the irradiance on the detector. As shown in
Figure 12a, the irradiance on a target surface for a point
source of intensity, I, is
(Sa)
(5b)
H
AREA SOURCES
In Figure l2b a lens has been placed between the
source and the detector. It is assumed that the distance d'
from the source to the lens is approximately equal to d:
(6)
it is considered to be an area source. This situation is
shown in Figure 11. Table III lists the design relationships
for an area source.
A special case that deserves some consideration occurs
when
'!»r,
2
that is, when the detector is quite close to the
Under this condition,
(11)
where d is the separation distance.
When the source has a diameter greater than 10 percent
of the separation distance,
Q';;;'O.lr,
=I/d2 ,
d' "'d,
(\2)
and the solid angle subtended at the source is sufficiently
small to consider the rays striking the lens to be parallel.
If the photodetector is circular in area, and the
distance from the lens to the detector is such that the
image of the source exactly fills the detector surface area,
the radiant flux on the detector (assuming no lens loss) is
(7)
sou~ce.
(\3)
(8)
where
Po is the radiant flux incident on the detector,
but, the area of the source,
PL is the radiant flux incident on the lens,
(9)
H' is the flux density on the lens, and
Therefore,
rL is the lens radius.
(10)
Using equation (12),
That is, the emitted and incident flux densities are
equal. Now, if the area of the detector is the same as the
area of the source, and equation (7) is satisfied, the total
incident energy is approximately the same as the total
H' = I/d 2 =H.
The flux density on the detector is
4-17
(\4)
•
PO~int~1~======~=~d=jJAD
Area Source
.8~"~.
Source
Point I
Source
FIGURE 11 - Are. Source Geometry
•
(a)
No Len.
(b)
With Lens
Figure 12 - Use of a Lens to
In~rea..
Irradiance on a Detector
~~~~~: -~~
External Lens
M R 0 300
FIGURE 13 - Possible Misalignment Due to Arbitrary U.. of
External Lens Dotted Rays Indicate Performance Without External Lens
HO=Po/AO,
(15)
parallel ray input to the transistor lens. Thus the net
optical circuit will be misaligned. The net irradiance on the
photo transistor chip may in fact be less than without the
external lens. The circuit of Figure 14 does show an
effective system. Lens 1 converges the energy incident on
its surface to lens 2 which reconverts this energy into
parallel rays. The energy entering the phototransistor lens
as parallel rays is the same (neglecting losses) as that
entering lens 1. Another way of looking at this is to
imagine that the phototransistor surface has been increased to a value equal to the surface area of lens 1.
where AO is the detector area, given by
(16)
Using (13), (14), and (16) in (15) gives
HO=J.
~f
(17)
Now dividing (17) by (11) gives the ratio of irradiance
on the detector with a lens to the irradiance without a
lens.
FIBER OPTICS
Another technique for maximizing the coupling between source and detector is to use a fiber bundle to link
the phototransistor to the light source. The operation of
fiber optics is based on the principle of total internal
reflection.
Figure 15 shows an interface between two materials of
different indices of refraction. Assume that the index of
refraction, n, of the lower material is greater than that, n',
of the upper material. Point P represents a point source of
light radiating uniformly in all directions. Some rays from
P will be directed at the material interface.
At the interface, Snell's law requires:
(18)
As (18) shows, if the lens radius is greater than the
detector radius, the lens provides an increase in incident
irradiance on the detector. To account for losses in the
lens, the ratio is reduced by about ten percent.
R=
0.9~:~)
2
(19)
where R is the gain of the lens system.
It should be pointed out that arbitrary placement of a
lens may be more harmful than helpful. That is, a lens
system must be carefully planned to be effective.
For example, the MRD300 phototransistor contains a
lens which is effective when the input is in the form of
parallel rays (as approximated by a uniformly radiating
point source). Now, if a lens is introduced in front of the
MRD300 as shown in Figure 13, it will provide a: non-
n sin 8 = n' sin 8' ,
(20)
where
8 is the angle between a ray in the lower material and
the normal to the interface,
and
8 'is the angle between a refracted ray and the normal.
Rearranging (20),
4-18
sinO'=..!!. sinO.
n'
(21)
By assumption, nln' is greater than one, so that
sin 0' > sin O.
(22)
However, since the maximum value of sin 0' is one and
occurs when 0' is 90·, 0' will reach 90· before 0 does.
That is, for some value of 0, defined as the critical angle,
8C, rays from P do not cross the interface. When 8 >BC,
the rays are reflected entirely back into the lower
material, or total internal reflection occurs.
Figure 16 shows the application of this principle to
fiber optics. A glass fiber of refractive index n is clad with
a layer of glass of lower refractive index, n'. A ray of light
entering the end of the cable will be refracted as shown.
If, after refraction, it approaches the glass interface at an
angle greater than 9C, it will be reflected within the fiber.
Since the angle of reflection must equal the angle of
incidence, the ray will bounce down the fiber and emerge,
refracted, at the exit end.
The numerical aperature, NA, of a fiber is defined as
the sin of the half angle of acceptance. Application of
Snell's law at the interface for 6C, and again at the fiber
end will give
NA=sinl/>=~.
FIGURE 14 - Eff_i.e Use of External Optics with the MRO 300
n·
FIGURE 15 - Ray Refraction at an Interface
(23)
For total internal reflection to occur, a light ray must
enter the fiber within the half angle 1/>.
Once a light ray is within the fiber, it will suffer some
attenuation. For glass fibers, an absorption rate of from
five to ten per cent per foot is typical. There is also an
entrance and exit loss at the ends of the fiber which
typically result in about a thirty per cent loss.
As an example, an illuminance E at the source end of a
three-foot fiber bundle would appear at the detector as
ED = 0.7 Ee-aL:0.7 Ee-(0.IX3)=0.51 E,
FIGURE 18 - Refrection In In Optical Fiber
(24)
Color temperature of a lamp is the temperature
required by an ideal blackbody radiator to produce the
same visual effect as the lamp. At low color temperatures,
a tungsten lamp emits very little visible radiation. However, as color temperature is increased, the response shifts
toward the visible spectrum. Figure 17 shows the spectral
distribution of tungsten lamps as a function of color
temperature. The lamps are operated at constant wattage
and the response is normalized to the response at 2800oK.
For comparison, the spectral response for both the
standard observer and the MRD phototransistor series are
also plotted. Graphical integration of the product of the
standard observer response and the pertinent source
distribution from Figure 17 will provide a solution to
equations (2a) and (2b).
Effective Irradiance - Although the sensitivity of a
photodetector to an illuminant source is frequently
provided, the sensitivity to an irradiant source is more
common. Thus, it is advisable to carry out design work in
where E is the illuminance at the source end,
ED is the illuminance at the detector end,
a is the absorption rate, and
L is the length.
This assumes an absorption loss of ten percent per foot.
TUNGSTEN LAMPS
Tungsten lamps are often used as radiation sources for
photodetectors. The radiant energy of these lamps is
distributed over a broad band of wavelengths. Since the
eye and the phototransistor exhibit different wavelengthdependent response characteristics, the effect of a tungsten lamp will be different for both. The spectral output
of a tungsten lamp is very much a function of color
temperature.
4-19
•
1.0
0.8
LL ~ ~ OOoK J0
1'...,." 2400 K2000
1 lLl
STO
1
08
1
0.6
~
.
a:
\
'j
,//
0.4
~
/
V
L
/
/
0.2
~
V
V
V
~
0.2 0.4
0.6
0.8
Again, such an integration is best evaluated graphically.
In terms of flux density, the integral is
:h
K
16000K
HE = rHO.) Y (A) d~
~
/
~
V
ts" E::::::-V I~ b.::
.........
1.0
1.2
1.4
1.6
1.8
2.0 2.2
Wavelength (",m)
FIGURE 17 - Radiant Spectral Distribution of Tunsten Lamp
40
•
~
30
ia:
/
~
c
.!
20
u
V
./
IEw
j:
10
W
J:
o
,...- ..-
1600
,..........
2000
HE = 0.14 (20) = 2.8 mW/cm 2
V
2400
2800
3200
3600
FIGURE 18 - MRD Irradiance Ratio venus Color Temperature
0.08
.
S
"2
0.06
1\
...'tE
0.04
~
~
i!w
HE =(5.0)(.185) = 0.925 mW/cm 2
\
0
I\,
" J'-...
0.02
--
t-- t:::-"
S
o
2000
2200
2400
2600
2800
FIGURE 19 - MRD Irradience/Illuminance Ratio ve.... s Color
Temperature
terms of irradiance. However, since the spectral response
of a source and a detector are, in general, not the same, a
response integration must still be performed. The integral
is similar to that for photometric evaluation.
r pO.) Y (A) d~
=!f
HE
= 4.0 rnA
0.925 mW/cm 2
= 4.33 mA/mW/cm 2 (29)
Now, as shown previously, an irradiance of 20
mW /cm 2 at a color temperature of 26000 K looks like
monochromatic irradiance at 0.81lm of 2.8 mW/cm2
(Equation 27). Therefore, the resultant current flow is
3000
CT, Color Temperature (OK) (TUNGSTEN Lamps Only)
PE =
(28)
By using this value of HE and the typical sensitivity
rating it can be shown that the device sensitivity to a
monochromatic irradiance at the MRD450 peak response
of 0.8 jLJlI is
""-
J:
(27)
The specifications for the MRD photo transistor series
include the correction for effective irradiance. For
example, the MRD450 is rated for a typical sensitivity of
0.8 mA/mW/cm2 . This specification is made with a
tungsten source operating at 28700 K and providing an
irradiance at the transistor of 5.0 mW/cm2 • Note that this
will result in a CI'Trent flow of 4.0 rnA.
However, from Figure 18, the effective irradiance is
CT, Color Temperature (OK) (Tungsten Lamp Only)
.!!
(26)
where HE is the effective flux density (irradiance) on
the detector
and H (A) is the absolute flux density distribution of
the source on the detector.
Graphical integration of equations (2b) and (26) has
been performed for the MRD series of phototransistors
for several values of lamp color temperature. The results
are given in Figures 18 and 19 in terms of ratios. Figure
18 provides the irradiance ratio, HE/H versus color
temperature. As the curve shows, a tungsten lamp
operating at 26000 K is about 14% effective on the MRD
series devices. That is, if the broadband irradiance of such
a lamp is measured at the detector and found to be 20
mw/cm 2 , the transistor will effectively see
\
\
V\
o
::><::::'~
\ /
MRO
ac
0
i
a:
0
1= S HE (4.33)(2.8)
=12.2 rnA
(30)
An alternate approach is provided by Figure 20. In this
figure, the relative response as a function of color
temperature has been plotted. As the curve shows, the
response is down to 83% at a color temperature of
2600o K. The specified typical response for the MRD450
at 20mW/em2 for a 28700 K tungsten source is 0.9
rnA/mW/em2 • The current flow at 26000 K and 20
mW /cm2 is therefore
(25)
where
PE is the effective radiant flux on the detector, P(~) is
the spectral distribution of source flux
and
1= (0.83)(0.9X20) = 14.9 rnA
Yo.) is the spectral response of the detector.
4-20
(31)
This value agrees reasonably well with the result
obtained in Equation 30. Sinlilarly, Figure 19 will show
that a current flow of 6.67 rnA will result from an
illuminance of 125 foot candles at a color temperature of
2600o K.
Determination of Color Temperature - It is very likely
that a circuit designer will not have the capability to
measure color temperature. However, with a voltage
measuring capability, a reasonable approxinlation of color
temperature may be obtained. Figure 21 shows the
classical variation of lamp current, candlepower and
lifetime for a tungsten lamp as a function of applied
voltage. Figure 22 shows the variation of color temperature as a function of the ratio
Geometric Considerations - The candlepower ratings
on most lamps are obtained from measuring the total
lamp output in an integrating sphere and dividing by the
unit solid angle. Thus the rating is an average, or
mean-spherical-candlepower. However, a tungsten lamp
cannot radiate uniformly in all directions, therefore, the
candlepower varies with the lamp orientation. Figure 23
shows the radiation pattern for a typical frosted tungsten
lamp. As shown, the maximum radiation occurs in the
horizontal direction for a base-down or base-up lamp. The
circular curve simulates the output of a uniform radiator,
and contains the same area as the lamp polar plot. It
indicates that the lamp horizontal output is about 1.33
100
MSCP
(32)
P=WATT
-~
80
where
MSCP is the mean spherical candlepower at the lamp
operating point and WATT is the lamp IV product
at the operating point.
As an example, suppose a type 47 indicator lamp is
used as a source for a phototransistor. To extend the
lifetinle, the lamp is operated at 80% of rated voltage.
MSCP
Lamp Rated Volts Rated Current
47
6.3V
150 rnA
40
20
2500
~
~ c3
~ 1:
:' ..i
260
"/
225
/
Life
200
175
150
,/
50
25
........
Current
125
Current
./
11Qlt
1.0
,.....'/
caf'e~
2900
2800
300
275
I
dand'~ Po~.r V
1.0
100
75
0
2700
FIGURE 20 - Relative R....onse of MRD Seria. _ ... Color
Temperature
0.52 approx
10
ti
2600
Source Color Temperature (Ok)
1000
~
-
60
I
100
~
I--""
Life
0.1
0.01
60
70
80
90
100
110
120
130
140
Percent of Aated Voltage
FIGURE 21 - Tungsten Lamp Param_ Variations va,...
Variations oIIout Ratlld Voltage
3200
From Figure 21 for 80% rated voltage,
(Rated Current) (percent current) = (.15X0.86) =0.129
ampere
(Rated CP) (percent CP) =(0.5XO.52) =0.26 CP
(Rated Voltage) (percent Voltage) =(6.3XO.8) =5.05 V
i<
!!.
e
!&
...~
WATTS =(5.05)(0.129) = 0.65
0.26
P=0.65
~
u
=04. ,
3000
2800
2600
2400
2200
CT=2300oK,
4-21
,/'
/V
2000
1800
From Figure 22, for p =0.4,
,/
o
0.2
0.4
---0.6
0.8
-1.0
!---
1.1
P. (MSCPIWAT"r)
FIGURE 22 - Color Temparature_
Candle PowerlPower Retio
1.2
1.4
shown in Figure 24, but as the fIgure shows, the GaAs
diode and the MRD photo transistor series are particularly
compatible. Application of Equation (26) to the GaAs
response and the MRD series response indicates that the
efficiency ratio, HE/H, is approximately 0.9 or 90%. That
is, an irradiance of 4.0 mW /cm2 from an LED will appear
to the phototransistor as 3.6 mW/cm2 • This means that a
typical GaAs LED is about 3.5 times as effective as a
tungsten lamp at 28700 K. Therefore, the typical sensitivity for the MRD4S0 when used with a GaAs LED is
approximately
1800
100% 900
-+-I-t-t-+-H
270 0
S =(0.8)(3.5) =2.8 mA/mW/cm2 •
•
An additional factor to be considered in using LED's is
the polar response. The presence of a lens in the diode
package will confIne the solid angle of radiation. If the
solid angle is 6, the resultant irradiance on a target located
at a distance d is
Equivalent MSCP for
Uniform Radiator. or
the Rated Lamp MSCP
00
(33)
FIGURE 23 - Typical Radiation Pattarn for a Frostad
I ncandescent Lamp
4P
H = """"22 watts/em 2 ,
(34)
'lr6 d
times the rated MSCP, while the vertical output, opposite
the base, is 0..48 times the rated MSCP.
The actual polar variation for a lamp will depend on a
variety of physical features such as filament shape, size
and orientation and the solid angle intercepted by the
base with respect to the center of the filament.
If the lamp output is given in horizontal candlepower
(HCP), a fairly accurate calculation can be made with
regard to illuminance on a receiver.
A third-form of rating is beam candlepower, which is
provided for lamps with reflectors.
In all three cases the rating is given in lumens/steradian
or candlepower.
where
P is the total output power of the LED in watts
6 is the beam angle
d is the distance between the LED and the detector in
em.
LOW FREQUENCY
APPLICATIONS
AND
STEADY
STATE
Light Operated Relay - Figure 25 shows a circuit in
which presence of light causes a relay to operate. The
relay used in this circuit draws about 5 rnA when Q2 is in
saturation Since hFE (min) for the MPS3394 is 55 at a
collector current of 2mA, a base current of 0.5 rnA is
suffIcient to ensure saturation. Photo transistor Q I provides the necessary base drive. If the MRD300 is used, the
minimum illumination sensitivity is 4 ~/footcandle,
therefore,
SOLID STATE SOURCES
In contrast with the broadband source of radiation of
the tungsten lamp, solid state sources provide relatively
narrow band energy. The gallium arsenide (GaAs) lightemitting-diode (LED) has spectral characteristics which
make it a favorable mate for use with silicon photodetectors. LED's are available for several wavelengths, as
I
E - _C__ 0.5 rnA
- SICEO - 4XIO-3 mA/footcandle
(35)
E = 125 footcandles
100
l
sc
0
;"
II:
.~
II:
SiC,\
I
I
I
I /
/"
80
60
40
/
20
0
0.3
/
I /
J
0.4
.
;'::MR~
SERIES
I
II
'\\
1
+10 V
,\
\
,\
\
.AsP
GaAs
··ENERGIZEO"
~
Ql
MRD300
\
\
\\ J
0.5
0.6
0.7
Wavelength (#lm)
o----------~------~---.
0.8
SIGMA
11 F-2300-GSI L
Q2
MPS3394
0.9
1.0
1.1
O'----------------------~
FIGURE 24 - Spectral Cha,actaristic. for Several LED'.
Comparad with MRD Serial
FIGURE 25 - Light-Operatad Relay
4-22
1! = 3.0 _ I (MRD450) = I (MRD450)
This light level can be supplied by a flashlight or other
equivalent light source.
The equivalent irradianee is obviously that value of
irradiance which will cause the same current flow. Assume
the light source is a flashlight using a PR2 lamp. The
ratings for this lamp are
Lamp
Rated Volts
Rated Current
MSCP
PR2
2.38
0.50 A
0.80
HE 1.0
or
1 (MRD300)
125
1 (MRD450) =375 footcandles
220
1= 275 (0.5 mAl = 0.293 mA
5
hFE (Q2) =0.293 = 17.
(45)
This is well below the hFE (min) specification for the
MPS3394 (55) so proper circuit performance can be
expected.
A variation of the above circuit is shown in Figure 26.
In this circuit, the presence of light deenergizes the relay.
The same light levels are applicable. The two relay circuits
can be used for a variety of applications such as automatic
door activators, object or process counters, and intrusion
alarms. Figure 27, for example, shows the circuit of
Figure 26 used to activate an SCR in an alarm system. The
presence of light keeps the relay deenergized, thus
denying trigger current to the SCR gate. When the light is
interrupted, the relay energizes, providing the SCR with
trigger current. The SCR latches ON, so only a momentary interruption of light is sufficient to cause the alarm
to ring continuously. S 1 is a momentary contact switch
for resetting the system.
(37)
and
IC
0.5
HE = SRCEO = 0.72 =0.65 mW /em 2
(44)
This will be the base current of Q2, and since the relay
requires 5 rnA, the minimum hFE required for Q2 is
(36)
This means that the lamp is operated at 130 per cent of
rated voltage. From Figure 21 for 130% rated voltage,
(Rated Current) (percent Current) = (0.5)(1.15) =
0.575 ampere
(Rated CP) (percent CP) =(0.80)(2.5) =2 CP
(Rated Voltage) (percent Voltage) = (2.38XI.3) = 3.1
volts.
Therefore, the MSCP/watt rating is 1.12. From Figure
22, the color temperature is 2720o K.
Now, from Figure 20, the response at a color temperature of 27200 K is down to 90% of its reference value. At
the reference temperature, the minimum SRCEO for the
MRD300 is 0.8 rnA/mW/cm2 , so at 27200 K it is
SRCEO (MIN) =(0.9)(0.8) =0.72 mA/mW/em 2
(43)
This value is pretty high for a two D-cell flashlight, but
the circuit should perform properly since about 200
footcandles can be expected from a flashlight, giving a
resultant current flow of approximately
If the flashlight has new batteries the lamp voltage is
VL = 2(1.55) = 3.1 volts
(42)
(38)
However, sensitivity is a function of irradiance, and at
0.695 mW/cm2 it has a minimum value (at 2720o K) of
about 0.45 mA/mW/em2 , therefore
0.5
HE =0.45 =1.11 mW/cm"
(39)
Again, we note that at an irradianee of 1.11 mW/cm2 ,
the minimum SRCEO is about 0.54 mA/mW/cm2. Several
applications of the above process eventually result in a
convergent answer of
HE'" 1.0 mW/em;
18 Kfl
Cl
0.11'F
10011
Sigma
I . - _...._.J lIF·2300·GSIL
(40)
Now, from the MRD450 data sheet, SRCEO (min) at
an irradiance of 1.0 mW /cm2 and color temperature of
27200 K is
Ql
SRCEO =(0. 15XO.9) =0.135 mA/mW/em2 (41)
MAD300
At 1.0 mW/em 2 , we can expect a minimum IC of
0.135 rnA. This is below the design requirement of 0.5
rnA. By looking at the product of SRCEO (min) and H on
the data sheet curve, the minimum H for 0.5 rnA for using
the MRD450 can now be calculated.
FIQURE 26 - Light D ••ne"i.ad Relay
4-23
•
10V
Alarm
' - - - r - -.... 2N4441
FIGURE 27 - Light·Relay
Operated SCR Alann Circuit
•
If the SCR has a sensitive gate, the relay can be
eliminated as shown in Figure 28. The photo transistor
holds the gate low as long as light is present, but pulls the
gate up to triggering level when the light is interrupted.
Again, a reset switch appears acn;>ss the SCR.
Voltage Regulator - The light output of an incandes·
cent lamp is very dependent on the RMS voltage applied
to it. Since the phototransistor is sensitive to light
changes, it can be used to monitor the light output of a
lamp, and in a closed·loop system to control the lamp
voltage. Such a regulator is particularly useful in a
projection system where it is desired to maintain a
constant brightness level despite line voltage variations.
Figure 29 shows a voltage regulator for a projection
lamp. The RMS voltage on the lamp is set by the firing
angle of the SCR. This firing angle in turn is set by the
unijunction timing circuit. Transistors Q I and Q2 form a
constant·current source for charging timing capacitor C.
The magnitude of the charging current, the capaci·
tance, C, and the position of R6 set the firing time of the
UJT oscillator which in turn sets the firing angle of the
SCR. Regulation is accomplished by phototransistor Q3.
The brightness of the lamp sets the current level in Q3,
which diverts current from the timing capacitor. Potentio·
meter R6 is set for the desired brightness level.
80Vrms
+10 V
10V
Alarm
9.1 k
51
MRD
300
FIGURE 28 - Light Operated SCR Alarm
Using Sensitiv..oate SCR
01 and 02:
03:
±o.S%
1.0 k
MPS6S16
MR0300
RS
7.5 k/2
Rl
W
10 k/2 W
FIGURE 29 - Circuit Diagram of
Voltage Regulator for
Projection Lamp.
R6
2.0k
seR
2N4444·
R2
3.3 K/1 W
R4
22 k
·2N4444 to be used with a heat sink.
4-24
If the line voltage rises, the lamp tends to become
brighter, causing an increase in the current of Q3. This
causes the unijunction to fire later in the cycle, thus
reducing the conduction time of the SCR. Since the lamp
RMS voltage depends on the conduction angle of the
SCR, the increase in line voltage is compensated for by a
decrease in conduction angle, maintaining a constant lamp
voltage.
Because the projection lamp is so bright, it will saturate
the phototransistor if it is directly coupled to it. Either of
two coupling techniques are satisfactory. The first is to
attenuate the light to the photo transistor with a translucent material with a small iris. The degree of attenuation
or translucency must be experimentally determined for
the particular projection lamp used.
The second coupling technique is to couple the lamp
and photo transistor by a reflected path. The type of
reflective surface and path length will again depend on the
particular lamp being used.
e
'lr--_----l( DU~PUT
·Vee
FIGURE 32 - Improved Speed Configuration for Phototransistor
·.C
500
I~ith ho~~~~~IB.S~sWI
•
N
0:1:
lit ..
-0;
r;
.
III C
'C
,
'"ai-
"
'200
0-
'C
timif
~
~u.
100
100
10k
1.0 k
RL, Load Resistance (Ohms)
1M
lOOk
FIGURE 33 - 3dS Frequency Response for Speed-up Circuit
u:
oS
8c
~
80
70
MRD300
§"
50
0
40
~
'E
30
~
20
w
~
III
W
III
0
I
60
/
5.0
/
0;
·..
.:!
E
;:
/
10
0
-6
-5
-4
-3
-2
---
2.0
tf
c
:c
/
l!
.,
.~
-1
I
Ip-l.5 mA
~
1.0
;::::::;t,
~-
0
2
VBE. Base·Emitter, Voltage (Volts)
0.6
0.1
FIGURE 30 - MRD300 Sa..-Emitter Junction
Capacitanca versus Voltage
0.2
0.6
1.0
2.0
6.0
10
R L. Load Resistance ~J..
FIGURE 34 - Switching Times with Speed-up Circuit
100
~lp-l.5mA
HIGH FREQUENCY DESIGN APPROACHES
50
~
E
20
c
10
.,·i
5.0
..
:c
It was shown in Figure 7 that the frequency response
of the MRD phototransistor series is quite dependent on
the load. Depending on the load value and the frequency
of operation, the device can be modled simply as in Figure
6, or else in the modified hybrid-pi form of Figure 3 .
While the hybrid-pi model may be useful for detailed
analytical work, it does not offer much for the case of
simplified design. It is much easier to consider the
transistor simply as a current source with a flrst·order
transient response. With the addition of switching characteristics to the device information already available, most
design problems can be solved with a minimum of effort.
/ . ~~
;:
tf
~-
2.0
V
1.0
0.1
./t:: I--'
t,
I
V
0.2
0.5
1.0
2.0
5.0
10
RL. Load Resistance (kfl)
FIGURE 31 - MRD300 Switching Times versus Load Resistan..
4-25
•
Switching Characteristics - When the photo transistor
changes state from OFF to ON, a significant time delay is
associated with the rbe Cbe time constant. As shown in
Figure 30, the capacitance of the emitter-base junction is
appreciable. Since the device photocurrent is gm Vbe
(from Figure 3), the load current can change state only as
fast as Vbe can change. Also, Vbe can change only as fast as
Cbe can charge and discharge through the load resistance.
Figure 31 shows the variations in rise and fall time
with load resistance. This measurement was made using a
GaAs light emitting diode for the light source. The LED
output power and the separation distance between the LED
and the photo transistor were adjusted for an ON phototransistor current of 1.5 rnA. The rise time was also measured for a short-circuited load and found to be about 700 ns.
The major difficulty encountered in high-frequency
applications is the load-dependent frequency response.
Since the photo transistor is a current source, it is desirable
to use a large load resistance to develop maximum output
voltage. However, large load resistances limit the useful
frequency range. This seems to present the designer with a
tradeoff between voltage and speed. However, there is a
technique available to eliminate the need for such a
tradeoff.
Figure 32 shows a circuit designed to optimize both
speed and output voltage. The common-base stage Q2
offers a low-impedance load to the phototransistor, thus
maximizing response speed. Since Q2 has near-unity
current gain, the load current in RL is approximately
equal to the phototransistor current. Thus the impedance
transformatiort provided by Q2 results in a relatively loadindependent frequency response.
The effect of Q2 is shown in Figures 33 and 34. In
Figure 33, the 3-dB frequency response as a function of
load is shown. Comparing this with Figure 7, the effect of
Q2 is quite evident. Comparison of Figures 31 and 34 also
demonstrates the effect of Q2.
synchronizing wires between the two flash units.
The MRD300 phototransistor used in this circuit is cut
off in a VCER mode due to the relatively low dc
resistance of rf choke Ll even under high ambient light
conditions. When a fast-rising pulse of light strikes the
base region of this device, however, LI acts as a very high
impedance to the ramp and the transistor is biased into
conduction by the incoming pulse of light.
When the MRD300 conducts, a signal is applied to the
gate of SCR Q2. This triggers Q2, which acts as a
solid-state relay and turns on the attached strobeflash
unit.
In tests this unit was unaffected by ambient light
conditions. It fired up to approximately 20 feet from
strobe-light flashes using only the lens of the MRD300 for
light pickup.
CONCLUSION
The photo transistor provides the circuit or system
designer with a unique component for use in dc and linear
or digital· time-varying applications. Use of a phototransistor yields extremely high electrical and mechanical
isolation. The proper design of an electro-optical system
requires a knowledge of both the radiation source
characteristics and the phototransistor characteristics.
This knowledge, coupled with an adequately defined
distance and geometric relationship, enables the designer
to properly predict the performance of his designs.
REFERENCES
L Motorola Application Note AN-440, Theory and
Characteristics ofPhototransistors.
2. Francis W. Sears, Optics, Addison-Wesley Publishing
Company, Inc., 1948.
3. IES Lighting Handbook, 3rd Edition, Illuminating
Engineering Society, 1959.
Remote Strobeflash Slave Adapter - At times when
using an electronic strobe flash, it is desirable to use a
remote, or "slave" flash synchronized with the master.
The circuit in Figure 35 provides the drive needed to
trigger a slave unit, and eliminates the necessity for
9·25
v
1111f---.----o
100mH
INPUT TO STROBE
FLASH UNIT
RFC
Rl
1.2 k
02
2N4216
FIGURE 35 - Strobeflash SI ••• Adaptor
4-26
AN-S71A
ISOLATION TECHNIQUES USING
OPTICAL COUPLERS
Prepared by
Francis Christian
INTRODUCTION
The optical coupler is a new device that offers the
design engineer new freedoms in designing circuits and
systems. Problems such as ground loop isolation, common
mode noise rejection, power supply transformations, and
many more problems can be solved or simplified with the
use of an optical coupler.
Operation is based on the principle of detecting emitted light. The input to the coupler is connected to a light
emitter and the output is a photodetector, the two elements being separated by a transparent insulator and housed
in a light-excluding package. There are many types of
optical couplers; for example, the light source could be
an incandescent lamp or a light emitting diode (LED).
Also, the detector could be photovoltaic cell, photoconductive cell, photodiode, phototransistor, or a light-sensitive SCR. By various combinations of emitters and detectors, a number of different types of optical couplers could
be assembled.
Once an emitter and detector have been assembled as
a coupler, the optical portion is permanently established
so that device use is only electronic in nature. This eliminates the need for the circuit designer to have knowledge
of optics. However, for effective application. he must
know something of the electrical characteristics, capabilities, and limitations, of the emitter and detector.
VF = diode forward voltage
IF = diode forward current
where
2.0
'0
~
~
-T~";5~~
•
1.8
'0
>
~
Ii.
>
1.0
1.0
2.0
5.0
-
10
20
V
V
50
100
200
500 1000
iF, Instantaneous Forward Current (rnA)
FIGURE 1 - Input Diode Forward Characteristic
COUPLER CHARACTERISTICS
The 4N25 is an optical coupler consisting of a gallium
arsenide (GaAs) LED and a silicon phototransistor. (For
more information on LEOs and phototransistors, see
References I and 2).
The coupler's characteristics are given in the following
sequence: LED characteristics, photo transistor characteristics, coupled characteristics, and switching characteristics.
Table I shows all four for the 4N25 series.
INPUT
For most applications the basic LED parameters IF and
VF are all that :lI'e needed to define the input. Figure I
shows these forward characteristics, providing the necessary information to design the LED drive circuit. Most
circuit applications will require a current limiting resistor
in series with the LED input. The circuit in Figure 2 is a
typical drive circuit.
The current limiting resistor can be calculated from
the following equation:
FIGURE 2 - Simple Drive Circuit For An LED
4-27
TABLE I
_boO
LED CHARACTERISTICS ITA" 25°C unless otherwise noted)
ce...... iStic
-A • • se LINkage Current
IV R " 3.0 V. R t "1.0 M ohmtl
"Forward Voltage
ifF -50mA)
...
'R
....
TV.
0.05
VF
'.2
.,A
1.5
Volu
150
ClJ*:ilanee
IV R ,"OV,f·l.0MHzt
pF
PHOTOTRANSISTOR CHARACTERISTICS IT A" 25°C and IF = 0 "",less otherwIse noledl
M;.
Svmbol
Characteristic
·Collector·Emltter Dark CUHenl
IV eE '" 10 V, BaseOpe.nl
Unl.
'00
4N25. 4N26, 4N27
....
Tv.
3.5
'CEO
4N28
·Collector·Base Dark Curren!
(Vee = 10 V, Emiuer Openl
Unit
50
100
20
'eBO
nA
nA
·Collec:tl)f·aase Breakdown Voltage
lie .. 100 ",A, Ie =01
VIBA1CBO
70
Volts
·Collector·Emitter Breakdown Voltage
tiC = 1.0 rnA, Ie =0)
VIBAICEO
30
Volts
VIBA1ECO
1.0
·EmiUer·ColI~o'
Breakdown Voltage
tie ",00p,A,'B"'OI
DC Current Gain
(VeE· 5.0 V Ie'" 500 ",AI
Volts
250
hFE
COUPLED CHARACTERISTICS IT A '" 25°C unless otherwise noted)
•
Characteristic
Symbol
M;.
·Collector Output Currenl (11
(VeE'" 10 V, IF "10 rnA, 18" 01
4N25,4N26
4N27,4N28
'e
2.0
1.0
"Isolallon Voltage 121
4N25
4N26,4N27
4N28
V'SO
2500
1500
500
TV.
5.0
3.0
10"
lie" lOrnA, Vee" 10 VI
Figures6and8
SlorageTlme
lie" lOrnA, Vee'" lOV}
01'
ime
Figures 7 and 8
0.5
Volts
1..
pF
300
kH,
'.
0.07
0.10
"
0.8
2.0
"'
"'
4N25,4N26
4N27,4N28
"
4.0
2.0
"'
4N25,.,N26
4N27,4N28
"
7.0
3.0
SWITCHING CHARACTERISTICS
;mo
Ohms
0.2
VeElsatl
Isolation Capacitance 121
IV .. 0, f " 1.0 MHz)
BandWidth 131
ftC "2.0mA,R L = 100 ohms, Figure 111
;se
mA
Volts
Isolation ResiSiance 121
IV - 500 VI
·Collector,Emitter Salurati()"
(Ie " 2.0 rnA, IF ~ SO mAl
DelavTlme
Unit
M"
4N25,4N26
4N27,4N28
4N25,4N26
4N27,4N28
,.'"
• IndICates JEDEC Registered Data. I' I Pulse Test Pulse Width ~ 300 jJ.5. Duty CvLle .~
(2) For this tesl LED pms 1 and 2 are common and Photo TranSIstor pins 4. 5 and 6 are common.
(311F adjusted to Vleld Ie'" 2.0 rnA and '<; ., 2.0 mAp p at 10 kHz.
1. 0
OUTPUT
The output of the coupler is the phototransistor. The
basic parameters of interest are the collector current IC
and collector emitter voltage, VCE. Figure 3 is a curve of
VCE(sat) versus IC for two different drive levels.
COUPLING
To fully characterize the coupler, a new parameter, the
dc current transfer ratio or coupling efi1ciency (11) must
be defined. This is the ratio of the transistor collector
current to diode current IC/IF. Figures 4A and 4B show
the typical dc current transfer functions for the couplers
at VCE = 10 volts. Note that 11 varies with IF and VCE.
II~! ~JlleIf 50 Ie
-
.ho.
E
B
s
TJ = 250 C
0
w~
•
i< iO.
=0>
6
0
o c
';',2
4N25
4N26
o. 4
=1;;
>~~ o. 2
II)
--
0
0.05 0.1
~
-
0.2
0.5
1.0
2.0
1
~ 4N27
4N2B
5.0
10
20
Ie, Collector Current (mA)
FIGURE 3 - Collector Saturation Volta..
4-28
.L
50
Once the required output collector current IC is known,
the input diode current can be calculated by
TURN-ON TIME
20
V~C110~
10
'r
where
.
IF is the forward diode current
IC is the collector current
1'/ is the coupling efficiency or transfer ratio.
2.0
.3:
1.0
•E
..c
....
0.5
i=
...~
poe;
0.2
'
td ...
O. 1
0.05
4N25.4N26
0.5 0.7 1.0
50
.,
.5
t
U
5.0
TJ
t> 2.0
...... 25°C
1.0
...... 100o C
2
0.5
0.1
0.5
1.0
2.0
5.0
10
20
50
100
200
30
50
.
~
10
r"::
:z J..
E 5.0
i=
-
-,~CE -,10 ,V
20
./
10
5.0
20
2.0
1.0
100
50
V6e=
IF=20IC=
TJ=250C_
;:
500
.:
ts
0.5
/::; >< ~,
4N25.4N26
I
4N27.4N28
0.2
0.5 0.7 1.0
2.0
3.0
I
5.07.0
10
20
30
50
Ie. Collector Current (mA)
TJ - _55°C
U
2
20
10
1'OJ
50
4N27.4N28
u
5.0 7.0
100
IF. Forwa ...d Diode Current (rnA)
~
"0
3.0
Collector Current (mA)
TURN-OFF TIME
FIGURE 4A - DC Current Transfer Ratio
~
:::
...
200
0.2
2
=~
-5SoC
"0
~
20 Ie
2SoC
FIGURE 5A - Switching Times
10
.!!
~
a
20
5
U
2.0
Ie.
VCE - 10r
~
c
a
4N25.4N26
4N27.4N28
100
~
IF
TJ
- -
5.0
FIGURE 58 - Switching Times
./
2.0
.......
1.0
0.5
2SoC
100°C
0.2
O. 1
0.5
./
1.0
2.0
5.0
10
20
50
100
200
500
~3.0
~ 2.0 r-TA = 25°C
IF. Forward Diode Current (mA)
5
Z
FIGURE 48 - DC Current Transfer Ratio
j1.0
RL= 100n
3 0.7
........
U
5 0 .5
~
RESPONSE TIME
The switching times for the couplers are shown in
Figures 5A and 5B. The speed is fairly slow compared to
switching transistors, but is typical of phototransistors
because of the large base-collector area. The SWitching time
or bandwidth of the coupler is a function of the load
resistor RL because of the RLCO time constant where Co
is the parallel combination of the device and load capacitances. Figure 6 is a curve of frequency response versus RL.
,
......
00.3
N.OO r'r"
I'
~ooon
li
~ 0.2
1'1....1
"0
U
;:'0 • 1
.-
30
50
70
100
200
300
f. Frequency (kHz)
FIGURE 6 - Frequency R_ _
4-29
500
J'
700 1000
•
IC -IF'I
....-VCC
4,.,7,.,0_....
Pulse 0-_...
Input
.....
IF
r
1.01'F IF(DC)
= 10 Volts
Modulation
Input
Constant
IC
",,--Vee
~11--,4V7\110..-. Clu:;:~t
=-
----.
1
IF(m)
2
-
10 Volts
IC a IFlI
I
LED
L
L-..._-<) Output
IF
IC (DC) = 2.0 mA
ic CAC Sine Wave) ., 2.0 mA p.p
FIGURE 8 - Line.r Mode Circuit
FIGURE 7 - Pulse Mode Circuit
•
6
OPERATING MODE
The two basic modes of operation are pulsed and linear.
In the pulsed mode of operation, the LED will be switched
on or off. The output will also be pulses either in phase
or 1800 out of phase with the input depending on where
the output is taken. The output will be 1800 out of
phase if the collector is used and in phase if the emitter.
is used for the output.
time for a diode-transistor coupler is in the order of 2 to
5 lIS, where the diode-diode coupler is 50 to 100 ns. The
one disadvantage with the diode-diode coupler is that the
output current is much lower than the diode-transistor
coupler. This is because the base current is being used as
signal current and the ~ multiplication of the transistor is
omitted. Figure 10 is a graph of IB versus IF using the
coupler in the diode-diode mode.
Vee
VCC
r----- l
Vln :n-z...
L__ _
I
I
r-----
Vln:n-z-
I
--I
L __ _
FIGURE 9 - Circuit Connections for Using the 4N26
As. Diode·Diode Coupler
In the linear mode of operation, the input is biased at
a de operating point and then the input is changed about
this de point. The output signal will have an ac and dc
component in the signal.
Figures 7 and 8 show typical circuits for the two modes
of operation.
THE 4N26 AS A DIODE-DIODE COUPLER
The 4N26 which is a diode-transistor coupler, can be
used as a diode-diode coupler. To do this the output is
taken between the collector and base instead of the collector and emitter. The circuits in Figure 9 show the connections to use the coupler in the diode-diode mode.
The advantage of using the 4N26 as a diode-diode
coupler is increased speed. For example, the pulse rise
140
130
120
110
100
90
« 80
./
!s 70
-
/
-
IF
rn-~'=
I-
I
/
60
I
I-
I
50
40
L
/
30
20
10
V
IB~
/
I
I
I
V
10
20
__
30
40
50
60
70
I _
..,.
.J_
A
_
I~
I
I
80
90
IF In (mA)
FIGURE 10 - la veraus IF Curve for Using the 4N26
As. Diode-Diode Coupler
4-30
100
+5 V
V
5
R'
-,
RL
1
~~--
JJ-
I
I
50
AC
2
I
_-4--'-.---f
4
IF =50 rnA
250
FIGURE 12 - Opto Coupler In A Load To Logic Translation
APPLICATIONS
The following circuits are presented to give the designer
ideas of how the 4N26 can be used. The circuits
have been bread·boarded and tested, but the values of the
circuit components have not been selected for optimum
performance over all temperatures.
Figure II shows a coupler driving a silicon controlled
rectifier (SCR). The SCR is used to control an inductive
load, and the SCR is driven by a coupler. The SCR used
is a sensitive gate device that requires only I rnA of gate
current and the coupler has a minimum current transfer
ratio of 0.2 so the input current to the coupler, IF. need
only be 5 rnA. The I k resistor connected to the gate
of the SCR is used to hold off the SCR. The I N4005
diode is used to supress the self·induced voltage when the
SCR turns off.
Figure 12 is a circuit that couples a high voltage load
to a low voltage logic circuit. To insure that the voltage
to the MTTL flip·flop exceeds the logic-one level, the coup·
ler output current must be at least 10 rnA. To guarantee
10 rnA of output current, the input current to the LED
must be 50 rnA. The current limiting resistor R can be
V-VF
. calculated from the equation R = - - . If the power
0.05
supply voltage, V, is much greater than VF, the equation
V
for R reduces to R =-- .
0.05
The circuit of Figure 13 shows a coupler driving an
operational amplifier. In this application an ac signal is
passed through the coupler and then amplified by the op
amp. To pass an ac signal through the coupler with minimum distortion, it is necessary to bias the LED with a dc
current. The ac signal is summed with the dc current so
the output voltage of the coupler will have an ac and a
dc component. Since the op amp is capacitively coupled
to the coupler, only the ac signal will appear at the output.
+5 V
47
.....J
6
Gate
Signal
FIGURE 11 - Coupler-Driven SCR
510
I
L __
roc
+15 V
= 10 rnA
4N26
5
r----
"1
I
I
J
lOOk
IIl F 10k
100
FIGURE 13 - Coupling An AC Signol to an Oparational Amplifier
4-31
•
The circuit of Figure 14 shows the 4N26 being used as a diode-diode coupler, the output being taken from the collectorbase diode. In this mode of operation, the emitter is left open, the load resistor is connected between the base and ground,
and the collector is tied to the positive voltage supply. Using the coupler in this way reduces the sWitching time from
2 to 3 IJS to 100 ns.
+6
47
5
4N26
r
I
I
I
4
L
+6 V
2
1-
•
6
T"-'
0.1 ",F
1 . 0115 - \
-:::-
Input 3 V = r - L
Pulse
o
50
-6 V
0.6V~
Output
MC1733
90
o
10
tr
10-90~100
nl
FIGURE 14 - Using the 4N26 as a Diode-Diode Coupler
The circuit of Figure ISis a standard two-transistor one-shot, with one transistor being the output transistor of the
coupler. The trigger to the one-shot is the LED input to the coupler. A pulse of 3 /-IS in duration and IS rnA will trigger
the circuit. The output pulse width (PWo) is equal to 0.7 RC + PWI + 6/-1s where PWI is the input pulse width and 6
/-IS is the turn-off delay of the coupler. The amplitude of the output pulse is a function of the power supply voltage of the
output side and independent of the input.
!
+5 V
R = 47 k
4.7 k
4.7 k
Vo
0.0311F
5
IF
1
C
4N26
.------ --,
~TIc- _.JII
MPS6515
5VT~
6 100k -:::-
PW
= 0.7
RC
L ___
Input
~5mA
Output
PWout = 0.7 RC + PWmin
PWmin = PWin + 6 IlS
4
-:::-
VOl Low) ::: 0.2 V
PWin::::::3 Il'
VO(High)
(Minimum)
FIGURE 15 - Pulse Stretcher
4-32
= 5.0 V (fo, R
jl> 4.7 k)
the coupler will switch on. This will cause Q2 to conduct
and the output will be in a high state. When the input to
the LED is removed, the coupler's output transistor will
shut off and the output voltage will be in a low state. Because of the high impedance in the base of the coupler
The circuit of Figure 16 is basically a Schmitt trigger.
(.ne of the Schmitt trigger transistors is the output transistor of a coupler. The input to the Schmitt trigger is the
LED of the coupler. When the base voltage of the coupler's transistor exceeds Ve+Vbe the output transistor of
MPS6518
100 k
=>
30 mA
T T
4N26
51
1
1
Q2
1.8 k
51 pF
5
IF
1.2 k
_ -.........M -....~ +12 V
27 k
....~'-__ Output
.-------,
~"2--Ya,
:
~
r-- ~'"--'--<>------"
1.2 k
JL
Input
4
L______ .J
1.2 k
6
100 k
3 V
Input
•
-,r----.,
ovJ
I
2.5V-r----\.
Output
0 V--..!
I I I
I" 0 1 2
I
3
I
I
5
4
I
6
I
7
I
8
'--I
I
9 10
FIGURE 16- Optically Coupled Schmitt Trigger
+5 V
1k
1k
10k
5
1001
10 k
r---
~---------.OutPut
5
6
----,
1
100
~Re.et
set~
Input~~
:......s-~Input
____ -1
L ____ _
4N26
4N26
2V7\
Set
Input 0 V
' -_ _ _ _ _ _ _ _ _ _ _ _ __
r-----------..,
4.5 V
Output
/
0.5 V
\
--.I
1...- - - -
2.0V~
Reset
Input
o V·1- -'--'--'-1-:1--:-1--:-1""""'-:-1--:-1-1'--:1-1--:-1 1 1 1 1 1 1 1
t(I") 0
3 4
5
6
8
91011121314151617181920
FIGURE 17 - Optically Coupled R-S Flip-Flop
4-33
transistor, the turn-off delay is about 6 MS. The high base
impedance (100 k ohms) represents a compromise between
sensitivity (input drive required) and frequency response.
A low value base resistor would improve speed but would
also increase the drive requirements.
The circuit in Figure 17 can be used as an optically coupled R-S flip-flop. The circuit uses two 4N26 couplers
cross coupled to produce two stable states. To change
the output from a low state to a high state requires a
positive 2 V pulse at the set input. The minimum width
of the set pulse is 3 MS. To switch the output back to the
low state needs only a pulse on the reset input. The resetoperation is similar to the set operation.
Motorola integrated voltage regulators provide an input
for the express purpose of shutting the regulator off. For
large systems, various subsystems may be placed in a standby mode to conserve power until actually needed. Or the
power may be turned OFF in response to occurrences such
as overheating, over-voltage, shorted output, etc.
With the use of the 4N26 optically coupler, the regulator can be shut down while the controlling signal is
isolated from the regulator. The circuit of Figure 18 shows
a positive regulator connected to an optical coupler.
To insure that the drive to the regulator shut down
control is I rnA, (the required current), it is necessary to
drive the LED in the coupler with 5 rnA of current, an
adequate level for logic circuits.
10=1 mA
•
+Vo
3
R'
MC1569R
MC1469R
4N26
IF=5mA r - - - - -
-:tJ~
L __
lo.1/J.F
R' ~ IV In -1.7
vi
kf!
FIGURE 18 - Optical Coupler Controlling the Shut Down
of MC1569 Voltage Regulator
r---------------------~--~+5
10 k
10 k
/"--+--.- Out
50
1
4N26
,---
,0G i *-z-.
10 pF
A
2
L _____
MPS6515
27 k
J100k
r
4
~'--I
:;::~? C'
5V
Output
tr~05l-'s
FIGURE 19 - Simple Pulse Amplifier
The circuit in Figure 19 is a simple pulse amplifier using
positive, ac feedback into the base of the 4N26. The
advantage of the feedback is in faster switching time. Without the feedback, the pulse rise time is about 2.0 MS, but
with the positive feedback, the pulse rise time is about
0.5 MS. Figure 17 A shows the input and output wavefroms of the pulse amplifier.
REFERENCES
I. "Theory and Characteristics of Photo transistors," Motorola Application Note AN440.
2. "Motorola Switching Transistor Handbook."
3. Deboo, G.J. and C.N. Burrous, Integrated Circuits and
Semiconductor Devices Theory and Application, McGraw-Hill,1971.
4-34
AN·780A
APPLICATIONS OF THE MOC3011 TRIAC DRIVER
Prepared by:
Pat O'Neil
•
DESCRIPTIONS OF THE MOC3011
Construction
The MOC3011 consists of a gallium arsenide infrared
LED optically exciting a silicon detector chip, which is
especially designed to drive triacs controlling loads on the
liS Vac power line. The detector chip is a complex device
which functions in much the same manner as a small
triac, generating the signals necessary to drive the gate of
a larger triac. The MOC30ll allows a low power exciting
signal to drive a high power load with a very small number
of components, and at the same time provides practically
complete isolation of the driving circuitry from the
power line.
The construction of the MOC30 11 follows the same
highly successful coupler technology used in Motorola's
broad line of plastic couplers (Figure 1). The dual lead
IRED
frame with an epoxy undermold provides a stable dielectric
capable of sustaining 7.S kV between the input and
output sides of the device. The detector chip is passivated
with silicon nitride and uses Motorola's annular ring to
maintain stable breakdown parameters.
Basic Electrical Description
The GaAs LED has nominal 1.3 V forward drop at
10 rnA and a reverse breakdown voltage greater than 3 V.
The maximum current to be passed through the LED
is SOmA.
The detector has a mtnlIDum blocking voltage of
250 Vdc in either direction in the off state. In the on
state, the detector will pass 100 rnA in either direction
with less than 3 V drop across the device. Once triggered
into the on (conducting) state, the detector will remain
there until the current drops below the holding current
(typically 100 /lA) at which time the detector reverts to
the off (non-conducting) state. The detector may be
triggered into the on state by exceeding the forward
blocking voltage, by voltage ramps across the detector
at rates exceeding the static dv/ dt rating, or by photons
from the LED. The LED is guaranteed by the specifications to trigger the detector into the on state when
lOrnA or more is passed through the LED. A similar
device, the MOC3010, has exactly the same characteristics
except it requires 15 rnA to trigger.
BLACK OVERMOLD
FIGURE 1 - Motorola Double-Moldod Coupler Package
4-35
Since the MOC3011 looks essentially like a small optically
triggered triac, we have chosen to represent it as shown
on Figure 2.
RLoad
~
6
~~
•
h
150
Rl
"1 ~
MOC3011
4
FIGURE 3 - Simple Triac Gating Circuit
FIGURE 2 - Schematic Representation
of MOC3011 and MOC3010·
USING THE MOC30 II AS A TRIAC DRIVER
Triac Driving Requirements
Figure 3 shows a simple triac driving circuit using
the MOC3011. The maximum surge current rating of the
MOC3011 sets the minimum value of RI through the
equation:
6V
VCC 300
1
6
MOC3011
RI (min) = Vin(pk)/1.2 A
180
Rl
If we are operating on the 115 Vac nominal line voltage,
Vin(pk) = 180 V, then
Cl
4
RI(min) = Vin(pk)/1.2 A = 150 ohms.
In practice, this would be a 150 or 180 ohm resistor.
If the triac has IGT = 100 rnA and VGT =2 V, then the
voltage Vin necessary to trigger the triac will be given
by VinT =RI • IGT + VGT + VTM =20V.
NOTE: Circuit supplies 25 mA drive to gat. of triac at
Vi" = 25 V and TA ~ 70°C.
IGT
TRIAC
R2
C
15mA
2400
0.1
30mA
1200
0.2
50mA
800
0.3
Resistive Loads
When driving resistive loads, the circuit of Figure 3
may be used. Incandescent lamps and resistive heating
elements are the two main classes of resistive loads for
which 115 Vac is utilized. The main restriction is that
the triac must be properly chosen to sustain the proper
inrush loads. Incandescent lamps can sometimes draw
a peak current known as "flashover" which can be
extremely high, and the triac should be protected by a
fuse or rated high enough to sustain this current.
FIGURE 4 - Logic to Inductive Load Interface
4-36
the snubber used for the MOC30 II will also adequately
protect the triac.
In order to design a snubber properly, one should
really know the power factor of the reactive load, which is
defined as the cosine of the phase shift caused by the
load. Unfortunately, this is not always known, and this
makes snubbing network design somewhat empirical.
However a method of designing a snubber network
may be defined, based upon a typical power factor. This
can be used as a "first cut" and later modified based
upon experiment.
Assuming an inductive load with a power factor of
PF = 0.1 is to be driven. The triac might be trying to turn
off when the applied voltage is given by
Line Transients-Static dv/dt
Occasionally transient voltage disturbance on the ac
line will exceed the static dv/dt rating of the MOC3011.
In this case, it is possible that the MOC3011 and the
associated triac will be triggered on. This is usually not a
problem, except in unusually noisy environments, because
the MOC3011 and its triac will commute off at the next
zero crossing of the line voltage, and most loads are
not noticeably affected by an occasional single half-cycle
of applied power. See Figure 5 for typical dv/dt versus
temperature curves.
Inductive Loads-Commutating dv/dt
Vto = Vpksinl/> "" Vpk "" 180 V
Inductive loads (motors, solenoids, magnets, etc.)
present a problem both for triacs and for the MOC30 II
because the voltage and current are not in phase with each
other. Since the triac turns off at zero current, it may be
trying to turn off when the applied current is zero but the
applied voltage is high. This appears to the triac like a
sudden rise in applied voltage, which turns on the triac
if the rate of rise exceeds the commutating dv/dt of the
triac or the static dv/dt of the MOC3011.
First, one must choose RI (Figure 4) to limit the peak
capacitor discharge current through the MOC3011. This
resistor is given by
Rl = Vpk/Imax = 180/1.2 A = ISO n
A standard value, 180 ohm resistor can be used in practice
for RI.
II is necessary to set the time constant for T = R2C.
Assuming that the triac turns off very qUickly, we have a
peak rate of rise at the MOC3011 given by
dv/dt =Vto/T =Vto/RlC
Snubber Networks
The solution to this problem is provided by the use of
"snubber" networks to reduce the rate of voltage rise
seen by the device. In some cases, this may require two
snubbers-one for the triac and one for the MOC30 II.
The triac snubber is dependent upon the triac and load
used and will not be discussed here. In many applications
Setting this equal to the worst case dv/dt (static) for the
MOC3011 which we can obtain from Figure 5 and solving
for R2C:
dv/dt(TJ = 70°C) = 0.8 V/IlS = 8 X 105
R2C = Vto/(dv/dt) = 180/(8 X 105) "" 230 X 10-6
Vcc
Ri"
- - Statitdv/dl
r---2-
- - - Commutating dv/dt
2.0
-;;;
~
1.6
;::
'"
~
1.2
~ 0.8
'"t- .:---, ......
RL=2W
-
1
-
~
I'..::
--
I-±
RL· SID!>
~
0.4
0
2S
0.20
0.12
S
l>
~
Vin~
4
RL
.
-<
t---.
I-
I
I-
t'-
z
--
0.08 ~
~
po.. t-..
0.04
~
J--+Statlc~
OV
Commutatin9
dv/dt
dv/dt
I
30
2;:
MOC3011
()-
~
0.16
6
1
0.14
14
10 k
J
2N3904
0
40
SO
60
70
8lJ
90
100
dv/dt"" 8.9 f Vi"
TA. AMBIENT TEMPERATURE (OC)
dv/dt Test Circuit
FIGURE & - dv/dt -.u. To_turo
4-37
-=
•
15 rnA allows a simple formula to calculate the input
resistor.
The largest value of R2 available is found, taking into
consideration the triac gate requirements. If a sensitive
gate triac is used, such as a 2N6071B, IGT = 15 rnA @
-400C. If the triac is to be triggered when Yin ..;; 40 V
Ri = (VCC - 1.5)/0.015
Examples of resistive input circuits are seen in Figures
2 and 6.
(Rl + R2) "'" VinlIGT "'" 40/0.015 '" 2.3 k
If we let R2
= 2400 ohms and C =0.1
Increasing Input Sensitivity
In some cases, the logic gate may not be able to source
or sink IS rnA directly. CMOS, for example, is specified
to have only 0.5 rnA output, which must then be
increased to drive the MOC3011. There are numerous
ways to increase this current to a level compatible with
the MOC3011 input requirements; an efficient way is
to use the MC 14049B shown in Figure 6. Since there are
six such buffers in a single package, the user can have
a small package count when using several MOC30 II's
in one system.
/IF, the snubbing
requirements are met. Triacs having less sensitive gates
will require that R2 be lower and C be correspondingly
higher as shown in Figure 4.
•
INPUT CIRCUITRY
Resistor Input
When the input conditions are well controlled, as for
example when driving the MOC3011 from a TTL, DTL, or
HTL gate, only a single resistor is necessary to interface
the gate to the input LED of the MOC30 11. This resistor
should be chosen to set the current into the LED to be
a minimum of 10 rnA but no more than 50 rnA. IS rnA is
a suitable value, which allows for considerable degradation
of the LED over time, and &lsures a long operating life for
the coupler. Currents higher than 15 rnA do not improve
performance and may hasten the aging process inherent
in LED's. Assuming the forward drop to be 1.5 V at
150
6
2
MOC3011
3-30
Vdc
3
FIGURE 7 - MOC3011 Input Protection Circuit
Vcc
R
6
lBO
2.4 k
2
MOC3011
1/6 Hex Buffer
3
Vcc
R
HEX BUFFER
5.0 V
220n
MC75492
10V
600n
MC75492
15 V
910n
MC14049B
O.lI'F
4
FIGURE 6 - MOS to oc Load Interface
4-38
2N6071B
115 Vac
Input Protection Circuits
a long operating lifetime. On the other hand, care should
be taken to insure that the maximum LED input current
(50 rnA) is not exceeded or the lifetime of the MOC3011
may be shortened.
In some applications, such as solid state relays, in
which the input voltage varies widely the designer may
want to limit the current applied to the LED of the
MOC3011. The circuit shown in Figure 7 allows a noncritical range of input voltages to properly drive the
MOC3011 and at the same time protects the input LED
from inadvertent application of reverse polarity.
APPLICATIONS EXAMPLES
Using the MOC3011 on 240 Vac Lines
The rated voltage of a MOC30 II is not suffiCiently
high for it to be used directly on 240 Vac line; however,
the designer may stack two of them in series. When used
this way, two resistors are reqUired to equalize the voltage
dropped across them as shown in Figure 8.
LED Lifetime
All light emitting diodes slowly decrease in brightness
during their useful life, an effect accelerated by high
temperatures and high LED currents. To allow a safety
margin and insure long service life, the MOC30 II is
actually tested to trigger at a value lower than the
specified 10 rnA input threshold current. The designer
can therefore design the input circuitry to supply 10 rnA
to the LED and still be sure of satisfactory operation over
Remote Control of ac Voltage
Local building codes frequently require all 115 Vac
light switch wiring to be enclosed in conduit. By using
a MOC3011, a triac, and a low voltage source, it is
+5 V
150
180
Load
MOC3011
1 M
MOC3011
1 M
1 k
FIGURE 8 - 2 MOC3011 Triac Drivers in Series to Drive 240 V Triac
Non~Conduit #22 Wire
180
115 Vae
360
2N6342A
---'l........- -
6V
FIGURE 9 - Remote Control of ac Loads Through Low Voltage Non-Conduit Cable
4-39
•
possible to control a large lighting load from a long
distance through low voltage signal wiring which is completely isolated from the ac line. Such wiring usually is
not required to be put in conduit, so the cost savings in
installing a lighting system in commercial or residential
buildings can be considerable. An example is shown in.
Figure 9. Naturally, the load could also be a motor,
fan, pool pump, etc.
(I/O) port is a TTL-compatible terminal capable of driving
one or two TTL loads. This is not quite enough to drive
the MOC3011, nor can it be connected directly to an SCR
or triac, because computer common is not normally
referenced to one side of the ac supply. Standard 7400
series gates can provide an input compatible with the
output of an MC6820, MC6821, MC6846 or similar
peripheral interface adaptor and can directly drive the
MOC3011. If the second input of a 2 input gate is tied
to a simple timing circuit, it will also provide energization
of the triac only at the zero crossing of the ac line voltage
as shown in Figure II. This technique extends the life
of incandescent lamps, reduces the surge current strains
on the triac, and reduces EMI generated by load switching.
Of course, zero crossing can be generated within the
microcomputer itself, but this requires considerable
software overhead and usually just as much hardware
to generate the zero-crossing timing signals.
Solid State Relay
•
Figure 10 shows a complete general purpose, solid state
relay snubbed for inductive loads with input protection.
When the designer has more control of the input and
output conditions, he can eliminate those components
which are not needed for his particular application to
make the circuit more cost effective.
Interfacing Microprocessors to 115 Vac Peripherals
The output of a typical microcomputer input-output
150
180
2.4 k
0.11'F
2W
lN4002
115 Vae
10 k
47
FIGURE 10 - Solid-State Relay
+5VO-__~~____________~
200W
+5 V
180
115 Vee
(Resistive
Load)
Motor
;;
M
U
o
::;;
Opto Triac
Drivers
4-40
115 Vae
( Inductive
Load)
FIBER OPTICS
General Information •
The Motorola Fi ber Optic product portfol io is intended princi pally to add ress
fiber optic communications systems in the computer, industrial controls,
medical electronics, consumer and automotive applications.
Analog and digital modulation schemes at bandwidths through 50 MHz and
system lengths through several kilometers may be achieved using Motorola
fiber optic semiconductor devices.
The semiconductors are housed in packages suitable for high-volume
production and low cost. Most important, however, the packages are standardized, permitting interchangeability, speedy field maintenance, and easy
assembly into systems.
5-1
a new method of cabled communication and data transmission using modulated light through an
optical cable.
Basic Fiber-Optic Link
,--- -- - --,____
I
Transmitter
~
Receiver
------------~
~
,....------'---,
I
I
I
I~
~I
Signal
In
I
I
L __________ J
I Signal
lOut
I
Fiber optic systems offer many advantages in terms of performance and cost over traditional electrical,
coaxial or hard-wired transmission systems.
Fiber optic systems inherently provide:
• Ability to
t~ansmit
a great deal of data on a single fiber
• Electrical isolation
•
EMI/RFI noise immunity, no electromagnetic coupling
•
No signal radiation or noise emission
•
No spark or fire hazard
• Short circuit protection, no current flow
• Transmission security
•
•
Lightweight, small diameter cable
•
Lightning surge current and transient immunity
•
Cost effectiveness
The fiber optic emitters and detectors are in the new and unique ferrule package and in the standard
lensed TO-18 type package. This ferrule package was developed to provide maximum coupling of light
between the die and the fiber. The package is small, rugged and producable in volume. The ferrule
mates with the AMP ferrule connector #227240-1 for easy assembly into systems and precise fiberto-fiber alignment. This assembly permits the efficient coupling of semiconductor-to-fiber cable and
allows the use of any fiber type or diameter.
,
Threaded Cable
Connector Assembly
Clad Fiber Light Guide
Highly Polished
Fiber Tip
Motorola
TO-18 Header
or Detector
Retention Plate
5-2
BASIC CONCEPTS OF FIBER OPTICS
AND FIBER OPTIC COMMUNICATIONS
Prepared By:
John Bliss
Introduction
This notc presents an introduction to the main principles of
fiber optics. Its purpose is to review some basic concepts from
physics that relate to fiber optics and the application of
semiconductor devices to the generation and detection of light
transmitted by optical fibers. The discussion begins with a
description of a fiber optic link and the inherent advantages of
fiber optics over wire.
A fiber optic link
Webster gives as one definition of a link "something which
binds together or connects." In fiber optics. a link is the
assembly of hardware which connects a source of a signal with
Input
Signal
its ultimate destination. The items which comprise the assembly
are shown in Figure I. As the figure indicates. an input signal.
for example. a serial digital bit stream. is used to modulate a
light source. typically an CEO (light emitting diode). A variety
of modulation schemes can be used. These will be discussed
later. Although input signal is assumed to be a digital bit
stream. it could just as well be an analog signal. perhaps video.
The modulated light must then be coupled into the optical
fiber. This is a critical element of the system. Based on the
coupling scheme used. the light coupled into the fiber could be
two orders of magnitude down from the total power of source.
Once the light has been coupled into the fiber. it is attenuated
as it travels along the fiber. It is also subject to distortion. The
degree of distortion limits the maximum data rate that can be
transmitted.
Signal
Processor
(Modulator)
Light
Source (Led)
Light
Detector
Signal
Processor
(Demodulator)
..._ _ _ _ _ _ _ _ Receiver _ _ _ _ _ _ _ __
FIGURE 1.
A FIBER OPTIC LINK
5-3
t-__.. output
Signal
less attenuation than does twisted wire orcoaxial cable. Also. the
attenuation of optical fihers. unlike that of wire. is not frequency
dependent.
Freedom from EMI. Unlike wire. glass does not pick up nor
generate electro-magnetic interference (EM I). Optical fibers do
not require expensive shielding techniques to desensitize them to
stray fields.
Ruggedness. Since glass is relatively inert in the kind of
environments normally seen by wired systems. the corrosive
nature of such environments is of less concern.
Safety. In many wired systems. the potential hazard of short
circuits between wires or from wires to ground. requires special
precautionary designs. The dielectric nature of optic fibers
eliminates this requirement and the concern for ha7ardous sparks
occurring during interconnects.
Lower Cost. Optical fiber costs arc continuing to decline while
the cost of wire is increasing. In many applications today. the total
system cost for a fiber optic design is lower than for a comparable
wired design. As time passes. more and more systems will be
decidedly less expensive with optical fibers.
At the receive end of the fiber. the light must now be coupled
into a detector element (like a photo diode). The coupling
problem at this stage. although still of concern. is considerably
less severe than at the source end. The detector signal is then
reprocessed or decoded to reconstruct the original input signal.
A link like that described in Figure I could be fully
transparent to the user. That is. everything from the input signal
connector to the output signal connector could be prepackaged.
Thus. the user need only be concerned with supplying a signal of
some standard format (like TOl.) and extracting a similar signal.
Such a TOl. in: TOl. out system obviates the need for a designer
to understand fiber optics. However. by analyzing the problems
and concepts internal to the link. the user is better prepared to
apply fiber optics technology to his system.
Advantages of Fiber Optics
There are both performance and cost advantages to be reali7ed
by using fiber optics over wire.
Greater Bandwidth. The higher the carrier frequency in a
communications system. the greater its potential signal bandwidth. Since fiber optics work with carrier frequencies on the
ordcr of 101.1-10 14 H7 as compared..to radio frequencies of 10'-10'
H7. signal bandwidths are potentially 10' times greater.
Smaller size and weight. A single fiber is capable of replacing
a very large bundle of individual copper wires. For example. a
typical telephone cable may contain close to 1.000 pairs of copper
wire and have a cross-sectional diameter of seven to tcn
centimeters. A single glass fiber cable capable of handling the
samc amount of signal might be only one-half centimeter in
diameter. The actual fiber may be as small as 50 u-meters. The
additional size would be the jacket and strength elements. The
weight reduction in this example should he obvious.
•
Physics of light
The performance of optical fibers can be fully analyzed by
application of Maxwell's Equation for electromagnetic field
theory. However. these are necessarily complex and. fortunately. can be bypassed for most users by the application of
ray tracing and analysis. When considering LED's and photo
detectors. the particle theory of light is used. The change from
ray to particle theory is fortunately a simple step.
Over the years. it has been demonstrated that light (in fact. all
electromagnetic energy) travels at approximatley 300.000 Km/
second in free space. It has also been demonstrated that in
materials denser than free space. the speed of light is reduced.
This reduction in the speed of light as it passes from free space
Lower attenuation. l.ength for length. optical fiber exhibits
Projected Path
01 Incident Ray
7,
/'
,/
"/
/
,/
,/
Free
Space
/
Refracted
Light
Ray
,/
,/
,/
Red
~Green
Incident
Light
Violet
(b)
(a)
FIGURE 2. REFRACTION OF LIGHT:
a. Light refraction at an interface; b. White light spectral seperation by prismatic refraction.
5-4
into a denser material results in refraction of the light. Simply
stated, the light ray is bent at the interface. This is shown in
Figure 2a. In fact, the reduction of the speed of light is different
for different wavelengths: and, therefore, the degree of bending
is different for each wavelength. It is this variation in effect for
different wavelengths that results in rainbows. Water droplets
in the air act like small prisms (Figure 2b) to split white sunlight
into the visible spectrum of colors.
The actual bend angle at an interface is predictable and depends
on the refractive Index of the dense material. The refractive
index, usually given the symbol n, is the ratio of the speed of
light in free space to its speed in the denser material:
n = speed of light in free space
speed of light in given material
The angle of refraction, 6, ' can be determined:
Sin82
=
fi;
(3)
Sin8,
If material I is air, n, has the value of I ~ and since na is greater
than I, 6, is seen to be less than 6, : that is, in passing through
the interface. the light ray is refracted (bent) toward the normal.
If material I is not air but still an index of refraction less than
material 2, the ray will still be bent toward the normal. Note that
if na is less than n, , 6 2 is greater than 9, . or the ray is refracted
away from the normal.
Consider Figure 4 in which an incident ray is shown at an
(I)
Although n is also a function of wavelength, the variation in
many applications is small enough to be ignored and a single
value is given. Some typical values of n are given in Table I:
angle such that the refracted ray is along the interface, or the
angle of refraction is 90°. Note that n I >n,. Using Snell's law:
SinDa =
~ Sin8,
(4)
or, with 6, equal to 90°:
Table I
Sin8,
Representative Indices of Refraction
(5)
= ~ = Sin8c
Vacuum ••••••..••••..•..•.•..•.•.••.••• 1.0
Air .•••••••••••••.•.•••••••••••• 1.0003 ( 1.0)
Water ••••••••••••••.••••.•••.••••••••• 1.33
Fused Quartz •••••••••••••••••••••••••••• 1.46
Glass ••••.••.••••.•..•.••.••••.••••.••• 1.5
Diamond •••.•.••••••••••••••••••••••••• 2.0
Silicon ••••••••••••••••••••••••••••••••• 3.4
Gallium-Arsenide •••••••••••••••••••••••••• 3.6
Normal
/'
It is interesting to consider what happens to a light ray as it
meets the interface between two transmissive materials. Figure
3 shows two such materials of refractive indices n, and na. A
n,
Interface
n,
light ray is shown in material I and incident on the interface at
point P. Snell's law states that:
(2)
18a
Incident
Light Ray
FIGURE 4. CRITICAL
ANGLE REFLECTION
Refracted
Light Ray
The angle, 8,. is known as the critical angle and defines the
angle at which incident rays will not pass through the interface.
For angles greater than 6" 100 percent of the light rays are
reflected <@1"Metal
n AlGoA.
P AlGoA.
~
t:::::::f
P AlGoA.
n GRA.
p GoAs
FIGURE 22. SECTION AA OF PLANAR
HETEROJUNCTION LED
If a fiber with a core equal in area to the emission area is
placed right down on the surface, it might seem that all the
emitted light would be collected by the fiber; but since the
emission pattern is lambertian, high order mode rays will not be
launched into the fiber.
There is a way to increase the amount of light coupled. If a
spherical lens is placed over the emitting area, the collimating
'This is adjustable by varying the mix of aluminum in the
aluminum-gallium-arsenide crystal.
FIGURE 23. INCREASING LIGHT COUPLING
WITH A MICROSPHERE
Etched-Well Surface LED
For data rates used in telecommunications ( 100 MHz), the
planar LED becomes impractical. These higher data rates
usually call for fibers with cores on the order of 50-62um. If a
planar LED is used, the broad emission pattern of several
hundred micro-meters will only allow a few percent of the
power to be launched into the small fiber. Of course, the
emission area of the planar device could be red uced; but this can
lead to reliablility problems. The increase in current density will
cause a large temperature rise in the vicinity ofthejunction, and
the thermal path from the junction to the die-attach header
(through the confining layer and substrate) is not good enough
to help draw the heat away from the junction. Continuous
operation at higher temperature would soon increase the nonradiative sites in the LED and the efficiency would drop rapidly.
Ifthechip is mounted upside down, the hot spot would be closer
to the die-a'ttach surface; but the light would have to pass
through the thick substrate. The photon absorption in the
substrate would reduce the output power significantly. The
solution to this problem was developed by Burris and Dawson,
of Bell Labs. The etched-well, or "Burrus" diode, is shown in
Figure 24.
The thick n-type substrate is the starting wafer. Successive
layers of aluminum-gallium-arsenide are grown epitaxilly on
the substrate. The layer functions (confinement, active,
window) are essentially the same as in the planar structure.
After the final p-type layer (contact) is grown, it is covered with
a layerofSi02' Small openings are then cut in the Si0 2 to define
the active emitting area. Metal is then evaporated over the wafer
and contacts the p-Iayer through the small openings. The final
5-13
•
s
aAs
'\.
A
"
~
f
./
H
-
Metal
n GaAs (Substrate)
n AIGaAs (Window)
p AIGaAs (Confinement)
'II
I
SI02
(b)
(a)
FIGURE 24. BURRUS, OR ETCHED WELL,
(b) Crossection at AA
LED: (a) Device
•
sources. A variation of the heterojunction family that emits a
highly-directional pattern is the edge-emitting diode. This is
shown in Figure 26. The layer structure is similar to the planar
and Burrus diodes, but the emitting area is a stripe rather than a
confined circular area. The emitted light is taken from the edge
of the active stripe and forms an eliptical beam. The edge-
processing consists of etching through the substrate. The etched
wells are aligned over the active areas defined by the Si0 2
openings on the underside ofthe wafer and remove the heavilyphoton-absorptive substrate down to the window layer. As an
indication of the delicacy of this operation, it requires doublesided alignment on a wafer about 0.1 m thick with a final
thickness in the opening of about 0.025mm.
The radiation pattern from the Burrus diode is still
lambertian. However, it is a remarkably-small emitting area
and enables coupling into very small fibers (down to 50um). The
close proximity ofthe hot spot (0.025mm) to the heat sink at the
die attach makes it a reliable structure.
Several methods can be used for launching the emitted power
emitting diode is quite similar to the diode lasers used for fiber
optics. Although the edge emitter provides a very efficient
source for coupling into small fibers, its structure calls for
significant differences in packaging from the planar or Burrus.
Photo Detectors
PIN Photodlodes. Just as a P-N junction can be used to
generate light, it can also be used to detect light. If a P-N
into a fiber. These are shown in Figure 25.
junction is reverse-biased and under dark conditions. very little
The Burrus structure is superior to the planar for coupling to
small fibers «100um) but considerably more expensive due to
its delicate structure.
current flows through it. However, when a light shines on the
device, photon energy is absorbed and hole-electron pairs are
created. If the carriers are created in or near the depletion region
at the junction, they are swept across thejunction by the electric
field. This movement of charge carriers across the junction
Edge-Emitting LED
The surface structures discussed above are lambertian
(a)
(b)
FIGURE 25. FIBER COUPLING TO A BURRUS DIODE.
(a) Standard Fiber Epoxied In Well.
(b) Fiber With Balled End Epoxied In Well.
(c) Microlens Epoxied In Well.
5-14
(e)
Metal _ _ _ _ _ _ _ _ _ _7'I<
SiOl
Metal
(al
FIGURE 26. EDGE EMITTING LED
(a) Stucture
(b) Beam Pattern
causes a current flow in the circuitry external to the diode. The
magnitude of this current is proportional to the light power
absorbed by the diode and the wavelength. A typical
photodiode structure is shown in Figure 27, and the IV
characteristic and spectral sensitivity are given in Figure 28.
In Figure 28a, it is seen that under reverse-bias conditions,
the current flow is noticeable a function of light power density
on the device. Note that in the forward-bias mode, the device
eventually acts like an ordinary forward-biased diode with an
exponential IV characteristic.
Although this type of P-N photodiode could be used as a fiber
optic detector, it exhibits three undesirable features. The noise
performance is generally not good enough to allow its use in
sensitive systems; it is usually not fast enough for high-speed
data applications; and due to the depletion width, it is not
sensitive enough. For example, consider Figure 29. The
depletion is indicated by the plot of electric field. In a typical
device, the p-anode is very heavily doped; and the bulk of the
depletion region is on the n-cathode side of the junction. As
light shines on the device, it will penetrate through the p-re!!.ion
toward the junction. If all the photon absorption takes place in
the depletion region, the generated holes and electrons will be
accelerated by the field and will be quickly converted to circuit
current. However, hole-electron pair generation occurs from
the surface to the back side of the device. Although most of it
occurs within the depletion region. enough does occur outside
this region to cause a problem in high-speed applications. This
problem is illustrated in Figure 30. A step pulse of light is
applied to a photodiode. Because of distributed capacitance
and bulk resistance, and exponential response by the diode is
expected. The photocurrent wave form show this as a ramp at
turn-on. However, there is a distinct tail that occurs starting at
point "'a." The initial ramp up to "'a" is essentially the response
within the depletion region. Carriers that are generated outside
the depletion region are not subject to acceleration by the high
electricfield. They tend to move through the bulk by the process
of diffusion, a much slower travel. Eventually, these carriers
reach the depletion region and are sped up. The effect can be
eliminated, or at least substantially reduced by using a PIN
structure. This is shown in Figure 3 \, and the electric field
Diffused p Region
p
(a)
(b)
FIGURE 27. PN PHOTODIODE
(a) Device
(b) Sectlon.Vlew At AA
5-15
•
Responsivity
O.88.UM
Increasing Incident Light Level
(b)
FIGURE 28. CHARACTERISTICS OF A PN PHOTODIODE
(a) I-V Family
(b) Spectral Sensitivity
•
distribution is shown in Figure 32. Almost the entire electronic
field is across the intrinsic (I) region so that very few photonsare
absorbed in the p- and n- region. The photocurrent response in
such a structure is essentially free of the tailing effect seen in
Figure 30.
In addition to the response time improvements. the high
resistivity I-region gives the PIN diode lower noise performance.
The critical parameters for a PIN diode in a fiber optic
application are:
I. Responsivity;
2. Dark current;
3. Response speed;
4. Spectral response.
Input
Light
Level
P
Direction
Of
E
I
I
I
I.-
Time
Junction
I
I
I
I
I-----
PhotoCurrent
[
Depletion Region
\
Time
FIGURE 30. PULSE RESPONSE OF A
PHOTODIODE
FIGURE 29. ELECTRIC FIELD IN A REVERSEBIASED PN PHOTODIODE
5-16
system with an LED operating at 820nm. the response (or
system length) would be:
Shallow D;Hused
'/PRegion
R(820)
= .:2!!..R(900) = 1.26R(900)
(13)
.78
100
/ '\
90
80
i!
~
"-
~
FIGURE 31. PIN DIODE STRUCTURE
~
::
Respons/vlly is usually given in amps/ watt at a particular
wavelength. It is a measure of the diode output current for a
given power launched into the diode. In a system. the designer
must then be able to calculate the power level coupled from the
system to the diode (see AN-B04. listed in Bilbliography).
Dark currf'nt is the thermally-generated reverse leakage
current in the diode. In conjunction with the signal current
calculated from the responsivity and incident power. it gives the
designer the on-off ratio to be expected in a system.
E
II+- ni Junction
t- Diode ThiCkne..
-I
FIGURE 32. ELECTRIC FIELD DISTRIBUTION
IN A PIN PHOTODIODE
Responle Speed determines the maximum data rate
capability of the diode; and in conjunction with the response of
other elements of the system. it sets the maximum system data
rate. 5
Spectral Response determines the range. or system length.
that can be achieved relative to the wavelength at which
responsivity is characterized. For example. consider Figure 33.
The responsivity of the MFODI02F is given as O.ISA/W at
900nm. As the curve indicates. the response at 900nm is 78
percent of the peak response. If the diode is to be used in a
'Device capacitance also impacts this. See "Designer's Guide
to Fiber-Optic Data Links"listed in Bibliography.
~
/
70
60
40
10
0
0.2
\
\
/
30
20
\
/
50
1\
"-
,/
0.3
0.4
0.5
0.6
0.1
0.8
}., WAVELENGTH
0.9
1.0
........
1.1
1.2
(~ml
FIGURE 33. RELATIVE SPECTRAL RESPONSE
MFOD 102F PIN PHOTODIODE
Integrated Detector Preamplifiers. The PIN photodiode
mentioned above is a high output impedance current source.
The signal levels are usually on the order oftens ofnanoamps to
tens of microamps. The signal requires amplification to provide
data at a usable level like T'L. In noisy environments. the
noise-insensitive benefits of fiber optics can all be lost at the
receiver connection between diode and amplifier. Proper
shielding can prevent this. An alternative solution is to integrate
the follow-up amplifier into the same package as the photo
diode. This device is called an integrated detector preamplifier
(lOP). An example of this is given in Figure 34.
Incorporating an intrinsic layer into the monolithic structure
is not practical with present technology. so a P-N junction
photodiode is used. The first two transistors form a transimpedance amplifier. A third stage emitter follower is used to
provide resistive negative feedback. The amplifier gives a low
impedance voltage output which is then fed to a phase splitter.
The two outputs are coupled through emitter followers.
The MFOD404F lOP has a responsivity greater than
20mV /uW at 900nm. The response rise and fall times are 50nS
maximum. and the input light power can go as high as 30uW
before noticeable pulse distortion occurs. Both outputs offer a
typical impedance of 200{2.
The lOP can be used directly with a voltage comparator or.
for more sophisticated systems. could be used to drive any
normal voltage amplifier. Direct drive ofa comparator is shown
in Figure 35.
A Fiber Optics Communications System
Now that the basic concepts and advantages of fiber optics
and the active components used with them have been discussed.
it is of interest to go through the design of a system. The system
will be a simple point-to-point application operating in the
simplex' mode. The system will be analyzed for three aspects:
'In a simplex system. a single transmitter is connected to a
single receiver by a single fiber. In a half duplex system. a single
5-17
•
~--------------------------------------------------~
Vee
Inverted
Output
Internal
Light
Pipe
Non Inverted
Output
Gnd
I
--------------------------------------------------~ Shield Ca..
FIGURE 34. INTEGRATED DETECTOR
PREAMPLIFIER
I. L.oss budget:
2. Rise time budget:
3. Data encoding format.
•
Loss Budget. If no in-line repeaters are used. every element of
the system between the LED and the detector introduces some
loss into the system. By identifying and quantifying each loss.
the designer can calculate the required transmitter power to
Some additional interconnect loss information is required.'
I. Whenever a signal is passed from an element with an
N.A. greater than the N.A: of the receiving element. the
loss incurred is given by:
N.A. Loss = 20 log (NA I / NA2)
(14)
where: N A I is the exit numerical aperture of the signal
source~
where: N A2 is the acceptance N .A. of'the element Ireceiving the signal.
ensure a given signal power at the receiver, or conversely. what
2.
signal'power will be received for a given transmitter power. The
process is referred to as calculating the system loss budget.
This sample system will be based on the following individual
characteristics:
Transmitter: MFOEI02F, characteristics in data sheet.
Fiber:
Receiver:
Silica-clad silica fiber with a core diameter of
200 urn; step index multi mode; 20dB / Km
attenuation at 900 nm; N.A. ofO.3S; and a 3dB
bandwidth of SMHz-Km.
3.
MFOD404F, characteristics in data sheet.
4.
The system will link a transmitter and receiver over a distance
of 2S0 meters and will use a single section of fiber (no splices).
6,cont. from pg. 5-17
fiber provides a bidirectional alternate signal flow between a
transmitter/receiver pair at each end. A full duplex system
would consist of a transmitter and receiver at each end and a
pair of fibers connecting them.
Whenever a signal is passed from an element with a
cross-sectional area greater than the area of the receiving
element. the loss incurred is given by:
Area Loss = 20 log (Diameter I / Diameter 2) (IS)
where: Diameter l,is the diameter of the signal source
(assumes a circular fiber pmt);
where: Diameter 2 is the diameter of the element
receiving the signal.
If there is any space between the sending and receiving
elements, a loss is incurred. For example: an LED with
an exit N.A. of 0.7 will result in a gap loss of 2dB if it
couples into a fiber over a gap of O.ISmm.
If the source and receiving elements have their axes
offset, there is an additional loss. This loss is also
dependent on the seperation gap. For an LED with an
exit N.A. of 0.7 and a gap with its receiving fiber of
O.ISmm, there will be a loss of 2.SdB for an -axial
misalignment of 0.03Smm.
'For a detailed discussion of all these loss mechanisms, see
AN-804.
5-18
2.2K
Data
Output
FIGURE 35. SIMPLE FlO DATA RECEIVER
USING lOP AND A VOLTAGE COMPARATOR
5.
6.
If the end surfaces ofthe two elements are not parallel, an
additional loss can be incurred. If the non-parallelity is
held below 2-3 degrees, this loss is minimal and can
generally be ignored.
As light passes through any interface, some of it is
reflected. This loss, called Fresnel loss, is a function ofthe
indices of refraction of the materials involved. For the
devices in this example, this loss is typically 0.2dBI
output power in the data sheet.
In this system, the LED is operated at 100 rnA. MFOEI02F
shows that at this current the instantaneous output power is
typically 130uW. This assumes that the junction temperature is
maintained at 25°C. The output power from the LED is then
converted to a reference level relative to IroW:
Po = 10 log
0.13mW
1.0mW
interface.
The system loss budget is now ready to be calculated. Figure
38 shows the system configuration. Table II presents the
Po = -8.86dBm
TABLE II
Fiber Optic Link Loss Budget
Loss
Contribution
Receiver Gap Loss
P. = p" - loss
( 18)
P R = 1O(-2.948)mW = O.,OOlmW
(19)
This reference level is now converted back to absolute power:
PR
6.02dB
= lOI-'··..)mW = O.OOlmW
(20)
Based on the typical responsivity of the MFOD404F, the
expected output signal will be:
o
2.00dB
2.50dB
0.20dB
5.00dB
0.20dB
2.00dR
2.50dB
0.20dB
(17)
The power received by the MFOD404F is then calculated:
individual loss contribution of each element in the link.
MFOEI02F to Fiber N.A. Loss
MFOEI02F to Fiber Area Loss
Transmitter Oap Loss (see text)
Transmitter Misalignment Loss (see text)
Fiber Entry Fresnel Loss
Fiber Attenuation (250 meters)
Fiber Exit Fresnel Loss
(16)
v"
= (30mV /uW) (luW) = 30mV
(21)
As shown in MFOD404F, the output signal will be typically
seventy-five times above the noise level.
In many cases, a typical calculation is insufficient. To
Receiver Misalignment Loss
Detector Fresnel Loss
o
Fiber to Detector N.A. Loss
Fiber to Detector Area Loss
o
Total Path Loss
20.62dB
Note that in Table II no Fresnel loss was considered for the
LED. This loss, although present, is included in specifying the
perform a worst-case analysis, assume that the
signat~to-noise
ratio at the MFOD404F output must be 20dB. The maximum
noise output voltage is 1.0mV. Therefore, the output signal
must be 10m V. With a worst-case responsivity ~f 20m V/ J.I. W,
the received power must be:
5-19
PR = Vo = lOmV = O.5"W
R
20mVI"W
(22)
•
~
___________________
~M~~
__________________~.
MFOD404F
MFOE102F
FIGURE 38. SIMPLEX FIBER OPTIC POINT TO POINT LINK
P R = 10 log 0.OOO5mW = ·33dBm
1mW
(23)
The link loss was already performed as worst case, so:
= -33dBm + 20.62dB = -12.39dBm
(24)
= 10(-""')mW = 0.0577mW = 57.7~W
(2S)
Pn(LED)
Po
•
MFOEI02F includes a derating curve for LED output versus
junction temperature. At IOOmA drive, the forward voltage
will be greater than I.SV worst case. Although it will probably
be less than 2.0V, using 2.0V will give a conservative analysis:
PillS'
= (O.IA) (2V) = 200mW
(26)
This is within the maximum rating for operation at 2SoC
ambient. If we assume the ambient will be 2SoC or less, the
junction temperature can be conservatively calculated:
lITJ
= (400°CjW) (0.2W) = 80°C
(27)
Ifwe are transmitting digital data, we can assume an average
duty cycle of SO percent so thalthellTJ will likely be 40°C. This
gives:
=
=
(28)
Tr TA +lITr 6SoC
The power output derating curve shows a value ofO.6S at 6SoC.
Thus, the DC power level will be:
Po(DC) = 57.7.,W = 88.77.,W
0.65
(29)
As MFOEI02F indicates, at SOmA DC the minimum power
is 40!, W. Doubling the current should approximately double
the output power, giving 80!, W.
Since the required DC equivalent power is 87.77uW, the link
may be marginal under worst case conditions. The designer may
be required to compromise somewhat on SIN ratio for the
output signal or set higher minimum output powers or
responsivity specifications on the LED and dete~tor devices.
Use of a lower attenuation cable, or higher NI A cable, would
also help by reducing the length loss or N I A loss at the
'It might also be advisable to allow for LED degradation over
time. A good design may include 3.0dB in the loss budget for
long-term degradation.
transmitter end.
Rise Time Budget. The cable for this system was specified to
have a bandwidth of SMHz-Km. Since the length of the system
is 2S0 meters, the system bandwidth, if limited by the cable, is
20M Hz. Data links are usually rated in terms of a rise time
budget. The system rise time is found by taking the square root
of the sum of the squares of the individual elements. In this
system the only two elements to consider are the LED and the
detector. Thus:
(30)
Using the typical values of MF0D404F and MFOEI02F:
11" =--I(2S)2 + (SO),
= 60nS
(31)
Total system performance may be impacted by including the
rise time of additional circuit elements. Additional considerations are covered in detail in AN-794 and the Designer's
Guide mentioned earlier (see Bibliography).
Data Encoding Format, In a typical digital system, the
coding format is usually NRZ, or non-return to zero. In this
format, a string of ones would be encoded as a continuous high
level. Only when there is a change of state to a "0" would the
signal level drop to zero. In RTZ (return to zero) encoding, the
first half of a clock cycle would be high for a "I" and low for a
"0." The second half would be low in either case. Figure 39
shows an NRZ and RTZ waveform for a binary data stream.
Note between a-b the R TZ pulse rate repetition rate is at its
highest. The highest bit rate requirement for an RTZ system is a
string of "I's". The highest bit rate for an NRZ system is for
alternating "I's" and "O's," as shown from b-c. Note that the
highest N RZ bit rate is halfthe highest R TZ bit rate, or an R TZ
system would require twice the bandwidth of an NRZ system
for the same data rate.
However, to minimize drift in a receiver, it will probably be
AC coupled; but if NRZ encoding is used and a long string of
"I's" is transmitted, the AC coupling will result in lost data in
the receiver. With RTZ data, data is not lost with AC coupling
since only a string of "O's" results in a constant signal level; but
that level is itself zero, However, in the case of both NRZ and
RTZ, for any continuous string of either "I 's" or "O's" for NRZ
or "O's R TZ will prevent the receiver from recovering any
5-20
o
Binary Data
NRZ
Vee
RTZ
Vee
o
0
o
o
o
o
o
FIGURE 39. NRZ AND RTZ ENCODED DATA
clock signal.
Another format, called Manchester encoding, solve.s this
problem. by definition, in Manchester, the polarity reverses
the receiver may saturate. A good encoding scheme for these
applications is pulse bipolar encoding. This is shown in Figure
41. The transmitter runs at a quiescent level and is turned on
once each bit period regardless of the data. This is shown in
Figure 40. The large number of level transitions enables the
receiver to derive a clock signal even if all ")'s" or all "0'5" are
harder for a short duration during a data "0" and is turned off
for a short duration during a data "I".
Additional details on encoding schemes can be obtained from
being received.
recent texts on data communications or pulse code modulation.
Binary Data
NRZ
Manchester
o
o
0
o
o
0
o
o
•
Vee
Vee
FIGURE 40. MANCHESTER DATA ENCODING
In many cases, clock recovery is not required. It might appear
that RTZ would be a good encoding scheme for these
applications. However, many receivers include automatic gain
control (AGC). During a long stream of "O's," the AGC could
crank the receiver gain up; and when "I 's" data begin to appear,
Summary
This note has presented the basic principles that govern the
coupling and transmission of light over optical fibers and the
design considerations and advantages of using optical fibers for
communication information in the form of modulated light.
o
Binary Data
NRZ
Pulse
Bipolar
o
o
0
0
o
Vee
Vee
Vcc/2
FIGURE 41. PULSE BIPOLAR ENCODING
Bibliography
•
I.
2.
3.
Gempe, Horst; "Applications of Ferruled Components to
Fiber Optic Systems," Motorola Application Note AN804; Phoenix, Arizona; 1980.
Mirtich, Vincent L; "A 20-MBaud Full Duplex Fiber Optic
Data Link Using Fiber Optic Active Components,"
Motorola Application Note AN-794; Phoenix, Ari7.0na,
1980.
Mirtich, Vincent L; "Designer's Guide to: Fiber-Optic
Data Links," Parts 1,2, & 3; EDN June 20, 1980; August 5,
1980; and August 20, 1980.
5-22
o
o
BASIC FIBER OPTIC TERMINOLOGY
FIBER:
The glass, plastic-clad silica or plastic medium by which light
is conducted or transmitted. Can be multi-mode (capable of
propagating more than one mode of a given wavelength) or
single-mode (one that supports propagation of only one mode
of a given wavelength).
CABLE:
The jacketed combination of fiber or fiber bundles with cladding
and strength reinforcing components.
CLADDING:
A covering for the core of an optical fiber that provides optical
insulation and protection. Generally fused to the fiber, it has a
low index of refraction.
CORE:
The light transmitting portion of the fiber optic cable, It has a
higher index of refraction than the cladding.
ACCEPTANCE ANGLE:
A measure of the maximum angle within which light may be
coupled from a source or emitter. It is measured relative to the
fiber's axis.
NUMERICAL
APERTURE INA):
A number that indicates a fiber's ability to accept light and
shows how much light can be off-axis and still be accepted
by the fiber.
FRESNEL LOSS:
Reflection losses which occur at the input and output interfaces
of an optical fiber and are caused by differences in the index
of refraction between the core material and immersion media.
INDEX OF REFRACTION: Compares the velocity of light in a vacuum to its velocity in a
material. The index or ratio varies with wavelength .
EMITTER:
Converts the electrical signal into an optical signal. Lasers
or LED's are commonly used.
DETECTOR:
Converts light signals from optical fibers to electrical signals
that can be further amplified to allow reproduction of the
original signal.
5-23
•
•
5-24
FIBER OPTICS
Selector Guide
6-1
•
Designed as infrared sources for fiber optic communication systems. These devices are designed to
conveniently fit within compatible AMP connectors. (TO-18 type packages fit AMP connector 227015;
ferruled semiconductors fit AMP connector 227240-1.)
Both 820 nm and 900 nm wavelengths are available. Unless otherwise noted. the optical port of
the ferruled devices is 200 ILm fiber optic core diameter.
Response
Total Power Output
Package
...
CO
6I0
w
....
:::>
II:
II:
w
II.
~9'02
~B'02
~BD-01
nm
NA
tr/tf
Typ ns
50
900
-
-
50
II
Device
Type
Typ
MFOE100
550~W
Time
Fiber
Core
Diameter
@ IF (mA)
MFOE200
1.6mW
50
940
-
250
MFOE102F
140~W
100
900
200
0.7
25
MFOE103F
140~W
100
900
200
0.7
15
700~W
100
820
200
0.58
12
MFOE106F
-
Designed for the detection of infrared radiation in fiber optic communication systems. A family of
detectors including PIN diodes. photo transistors (XSTR). photo Darlingtons (DARL). and monolithic
Integrated Detector Preamplifiers (lDP) are provided. The Integrated Detector Preamplifiers contain light
detectors. transimpedance preamplifiers. and quasi-complementary outputs. These devices are
designed to conveniently fit within compatible AMP connectors. (TO-18 type packages fit AMP connector
227015; ferruled semiconductors fit AMP connector 227240-1.)
•
The optical port of the ferruled devices is 200 ILm fiber optic core diameter.
Responsivity
Device
Typ
Type
Package
...
CO
6
I-
0
W
....
:::>
II:
II:
W
II.
::::::::a
Number
~2'04
~-02
~A-02
~B'01
Response
Time
Typ
820nm
900nm
Volts
tr/tf
20
10 ns/l0 ns
PIN
MF00100
20 "A/mW/cm 2
18 ~AlmW/cm2
209·02
Operating
Voltage
XSTR
MF00200
8.4 mA/mW/cm 2
5.6 mA/mW/cm 2
20
2.5
OARL
MFOO300
85 mA/mW/cm2
75 mA/mW/cm 2
5.0
40 ~s/60
PIN
MFOO102F
0.5
PIN
MFOO104F
0.5"A/~W
~A/~W
~s/4.0 ~s
~s
0.4~A/~W
20
25 ns125 ns
0.4~A~W
5.0
6.0 ns/6.0 ns
20
XSTR
MFOO202F
115~A/~W
100~A/~W
OARL
MFOO302F
lOP
MFOO402F
6800 ~A/~W
1.7 mV/~W
6000 ~A/~W
1.5 mV/~W
5.0
.15
2.5 ~s/4.0 ~s
40 ~s/60 ~s
20 ns120 ns
lOP
MFOO404F
34
mV/~W
30mV/~W
5.0
40 ns/40 ns
lOP
MFOO405F
5.0mV/~W
4.0mV/~W
5.0
10 ns/l0 ns
6-2
Complete signal processing circuitry is used to translate electrical energy to optical energy for fiber
optic systems. This family includes monolithic integrated circuit drivers and complete fiber optic
modules with infrared source.
,,-
Device
Type
Package
,
Bandwidth
Operating
Voltage
Volts
Drive
Current
MFOC700'
10 MHz
10 Mbit (TIL)
20 Mbit (ECL)
NRZ
+5.0
Thru
200 rnA
MFOL02T
200 kbit (TIL)
NRZ
+5.0
100mA
620-06
Po
nm
Optical
Port
140!'W
900
200!,m
A
Devices used to convert optical energy to conditioned electrical impulses in fiber optic systems. This
family includes monolithic integrated circuit signal processing circuits with AGC and complete
modules with TTL and ECl outputs.
,,-
Device
Type
Package
,
Bandwidth
Operating
Voltage
Volts
AGe
Dynamic
Range
Min Input
for 10-9
Detector
BER
MFOC600
10 MHz
10 Mbit (TIL)
20 Mbit (ECL)
NRZ
+5.0
yes
20 dB
lOP or
PIN
1.0",W·
MFOL02R
200 kbit (TIL)
NRZ
+5.0
no
>20 dB
PIN
10 nW
(-50 dBm)
620-06
'With MFOD404F detector.
6-3
•
Fiber optic Links are designed as educational tools but are usable in real system applications. Tutorial
in nature, they include the necessary parts to construct fiber optic communication links. They include
preterminated fiber optic cable, connectors, source, and detector. In the MFOL02 are complete TIL
transmitter and receiver modules.
Device Type
Transmitter
Receiver
MFOL01
MFOE103F
MFOD402F
MFOL02
MFOL02T
MFOL02R
Cable
1 meter
10 meters
Data Rate
20 megabit NRZ
200 kbit NRZ
A complement of parts are made available to ease the design of fiber optic systems using the Motorola
ferruled semiconductor components, and are convenient items to the customer's purchasing cycle.
Device Type
•
Description
MFOA02
Conneclor. AMP 227240·1
MFOA03
Cable, 1 meter DuPont S120, Terminated
MFOA10
Cable, 10 meters Siecor 155, Terminated
6-4
FIBER OPTICS
Data Sheets
7-1
•
FIBER OPTIC DATA SHEETS
Page
MFOD100
PIN Photo Diode for Fiber Optic Systems ................................... 7-3
MFOD102F
PIN Photo Diode for Fiber Optic Systems ................................... 7-5
MFOD104F
PIN Photo Diode for Fiber Optic Systems ................................... 7-7
MFOD200
Phototransistor for Fiber Optic Systems .........................•.......... 7-9
MFOD202F
Phototransistor for Fiber Optic Systems ............................. , .. , ... 7-11
MFOD300
Photodarlington Transistor for Fiber Optic Systems ......................... 7-13
MFOD302F
Photodarlington Transistor for Fiber Optic Systems ......................... 7-15
MFOD402F
Integrated Detector/Preamplifier for Fiber Optic Systems ................... 7-17
MFOD404F
Integrated Detector/Preamplifier for Fiber Optic Systems ................... 7-21
MFOD405F
Integrated Detector/Preamplifier for Fiber Optic Systems ................... 7-25
MFOE100
Infrared-Emitting Diode for Fiber Optic Systems ............................ 7-29
MFOE102F
Infrared-Emitting Diode for Fiber Optic Systems ............................ 7-31
MFOE103F
Infrared-Emitting Diode for Fiber Optic Systems ............................ 7-33
MFOE106F
New Generation AIGaAs LED ............................................. 7-35
MFOE200
Infrared-Emitting Diode for Fiber Optic Systems ............................ 7-37
MFOL01
The Link ................................................................ 7-39
MFOL02
Link II ..............................................•.................... 7-41
•
7-2
®
MFOD100
MOTOROLA
o
PIN PHOTO DIODE FOR FIBER OPTICS SYSTEMS
... designed for infrared radiation detection in short length, high
frequency Fiber Optics Systems. Typical applications include:
medical electronics, industrial controls, M6800 Microprocessor
systems, security systems, etc.
FIBER OPTICS
PIN PHOTO DIODE
• Spectral Response Matched to MFOE100, 200
•
Hermetic Metal Package for Stability and Reliability
•
Ultra Fast Response - 1.5 ns typ
•
Very Low Leakage
ID = 2.0 nA (max)
•
Compatible with AMP Mounting Bushing #227015
@
VR
=
20 Volts
MAXIMUM RATINGS (TA = 25 0 C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
150
Volts
Total Oevice Dissipation@TA = 25°C
Po
100
0.57
mW
mW/oC
TJ.Tstg
-55 to +175
°c
Derate above 2SoC
Operating and Storage Junction
SEATING
PLANE
Temperature Range
STYLE 1:
PIN 1. ANOOE
PIN 2. CATHODE
FIGURE 1 - RELATIVE SPECTRAL RESPONSE
100
L
90
80
~
70
w
~
60
~
50
~
40
;::
~
L
20
a
a
0.2
II
L
~
1
/
30
NOTES:
1. PIN 2 INTERNALLY CONNECTED
TO CASE
2. LEAOS WITHIN 0.13 mm (0.005)
RAOIUS OF TRUE POSITION AT
SEATING PLANE AT MAXIMUM
MATERIAL CONOITION .
,
~
DIM
A
B
\
C
\.
/
D
F
\.
G
~
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
H
1.2
A. WAVELENGTH ("m)
7-3
J
K
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
5.31 5.84 0.209 0.230
4.52 4.95 0.178 0.195
6.22 6.98 0.245 0.275
0.41 0.48 0.D16 JlOlll
1.19 1.60 0.047 0.063
2.54 SSC
0.100 ase
0.99 1.17 0.039 0.046
0.84 1.22 0.033 0.048
12.70
0.500
3.35 4.01
0.132
45 0 8Se
45 0 1m!;
CASE 209-02
-
•
MFOD100
ELECTRICAL CHARACTERISTICS
Min
Symbol
Characteristic
Dark Current
Typ
Max
Unit
nA
ID
IVR =20 V, RL = 1,0 M, Note 1)
-
TA = 2SoC
TA = 1000C
VIBR)R
100
1,0
14
200
VF
-
-
1.1
Vo)ts
Series Resistance
OF = 50 mA)
Rs
-
-
10
ohms
Total Capacitance
IVR=20V,f=I.0MHz)
CT
4.0
pF
Responsivity (Figure 2)
R
-
Reverse Breakdown Voltage
10
-
Vo)ts
-
OR=10"A)
Forward Voltage
OF=50mA)
Response Time
ton
toff
IVR = 20 V, RL = 50 ohms)
1. Measured
..
under dark conditions.
0.4
0.5
-
"A/"W
-
1.0
1.0
-
ns
ns
-
-
H - 0
FIGURE 2 - RESPONSIVITY TEST CONFIGURATION
1 Meter Galite 1000 Fiber
or
DuPont PIR140
~=,\====,I,======~
]
MFOE100
Connector
TYPICAL CHARACTERISTICS
COUPLED SYSTEM PERFORMANCE versus FIBER LENGTH"
FIGURE 3 - MFOE100 SOURCE
1.0
'-....
FIGURE 4 - MFOE200 SOURCE
10
TA =1 150C
........
TA-25 0 C=
5.0
~ ........
•
is 2.0
C
.
........
..........
~
...........
..........
IF=50m0
'I
;!;
I'-.....
.......
1
1.0
....
..............
'-....
I
o
........
.5
........
O. 1
~
1.0
3.0
4.0
5.0
6.0
8.0
IF = 100mA
IF=-;~
r-....
r--.
0.5
..........
=>
9.0
......
0.2
.........
7.0
r--.
u
0.1
1.0
-
;(
.......,.. F 100 mA
10
o
FIBER LENGTH 1m)
3.0
6.0
9.0
FIBER LENGTH 1m)
'0.045" Dia. Fiber Bundle, N.A. ~ 0.67, Attenuation at 900 nm ~ 0.6 dB/m
7-4
12
15
®
MFOD102F
MOTOROLA
Advance InforIllation
FIBER OPTICS
PIN PHOTO DIODE
PIN PHOTO DIODE FOR FIBER OPTIC SYSTEMS
. . designed for infrared radiation detection in high frequency
Fiber Optic Systems. It is packaged in Motorola's Fiber Optic Active
Component (FOAC) case, and fits directly into AMP Incorporated
fiber optic connectors. These metal connectors provide excellent
R F I immunity. Typical applications include medical electronics,
industrial controls, M6800 microprocessor systems, security systems,
computer and peripheral equipment, etc.
• Fast Response - 25 ns Typ
• May Be Used with MFOExxx Emitters
• FOAC Package - Small and Rugged
• Fiber Input Port Greatly Enhances Coupling Efficiency
• Prepolished Optical Port
• Compatible with AMP Connector #227240·1
• 200 11m (8 mil) Diameter Optical Port
MAXIMUM RATINGS
(T A = 25 0 C Unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
100
Volts
Total Device Dissipation @TA - 25 0 C
PD
100
0.57
mW
mW/oC
TA
-30 to +85
DC
T stg
-30 to +100
°c
Rating
Derate above 250C
Operating Temperature Range
Storage Temperature Range
STYlE 10
PIN 1. ANODE
2. CATHODE/CASE
NOTES:
1.. CD IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR
LEADS:
FIGURE 1 - CONE OF ACCEPTANCE
\ ... \ •. 36(0.0141@\ T \
3. DIMENSIONING AND
TOLERANCING PER Y14.5, 1973.
MILLIMETERS
MIN MAX
6.86
7.11
2.54
2.64
0.40
0.48
3.94
4.44
6.17
6.38
G
2.54 8SC
K 12.70
M
450
NOM
6.22
N
6.73
DIM
A
B
0
E
F
Numerical Aperture (NA) = Sin ()
Full Cone of Emittance = 2.0 Sin- 1 (NA)
INCHES
MIN MAX
0.270 0.280
0.100 _0.104
0.016 0.019
0.155 0.175
0.243 0.251
0.loo8Se
0.500
45 0
NOM
0.245 0.265
CASE 338-02
This is advance Information and specifications are subject to change without notice.
Patent applied for.
7-5
-
MFOD102F
ELECTRICAL CHARACTERISTICS
IT A =
2S0C)
Symbol
Min
Typ
MI.
Unit
ID
-
-
2.0
nA
VIBRIR
100
200
-
Volt!
Forward Voltage
(iF=50mAI
VF
-
-
1.1
VollS
Series Resistance
R,
-
10
ohm.
-
4.0
pF
NEP
-
50
-
IW/.,fHz
R
0.15
0.40
-
I'A/I'W
ton
toll
NA
-
-
25
25
-
-
0.48
Characteristic
Dark Current
IVR· 20 V. RL = 1.0 M, H ~ 0)
Reverse Breakdown Voltage
(iR
= 101'A)
IIF
= SOmAl
Total Capacitance
IVR
CT
=20 V, I =1.0 MHz)
Noise Equivalent Power
OPTICAL CHARACTERISTICS
IT A = 25°C)
Responsivity @900nm
IVR = 20 V, RL = 10 n, P = 10 I'W'1
Response Time @900 nm
IVR =20V,RL=50U)
Numerical Aperture of Input Port
1200 I'm [8 mil [ diameter corel
-
ns
n.
-
-
*Power launched into Optical Input Port. The designer must account for interface coupling losses.
TYPICAL CHARACTERISTICS
FIGURE 2 - RELATIVE SPECTRAL RESPONSE
100
/
90
80
£
~
z
60
50
>
40
.."'
..~
>=
10
10
8.0
6.0
5.0
4.0
0.7
0.8
0.9
1.0
........
~ 0.3
1.1
-
--
r-
........ 4
~~
....... ~
0.2
i'...
0.6
~
1
~ 0.4
\.
0.5
-t-,
e'-' 0.6
0.5
/
0.4
-... -...
cr
I\.
O.l
Source: MFOE 102F
IF - 50 rnA
TA=250 C
........
B0.81.0
o
0.2
~
~ 2.0
_\
\
/
~
f= --
1 3.0 ~
\
1
/
lO
20
,
\.
/
70
~
FIGURE 3 - DETECTOR CURRENT versus FIBER" LENGTH
0.1
1.2
20
A. WAVelENGTH (I'm)
40
60
80
100
120
140
FIBER LENGTH
..... "'160
180
200
220
Iml
Fiber Type:
1. Quartz Products aSF200
2. G.lil.o G.lile 3000 LC
3. Vallee PC 10
4. DuPont PFXS f20R
7-6
®
MFODI04F
MOTOROLA
Advance InforITIation
FIBER OPTICS
PIN PHOTO DIODE
PIN PHOTO DIODE FOR FIBER OPTIC SYSTEMS
.. designed for infrared radiation detection in high frequency
Fiber Optic Systems. It is packaged in Motorola's Fiber Optic Active
Component (FOAC) case, and fits directly into AMP Incorporated
fiber optic connectors. These metal connectors provide excellent
RFI immunity. Typical applications include medical electronics,
industrial controls, M6800 microprocessor systems, security systems,
computer and peripheral equipment, etc.
• Fast Response - 6.0 ns Typ @ 5.0 V
• May Be Used with MFOExxx Emitters
• FOAC Package - Small and Rugged
• Fiber Input Port Greatly Enhances Coupling Efficiency
• Prepolished Optical Port
• Compatible with AMP Connector #227240·'
• 200 11m (8 mil) Diameter Optical Port
MAXIMUM RATINGS
(T A == 25 0 C Unless otherwise noted)
Rating
Symbol
Value
Unit
VR
lOa
Volts
Po
100
0.57
mW
mW/oC
TA
T stg
-30 to +85
°C
-30 to +100
°C
Reverse Voltage
Total Device Dissipation
Derate above 25°C
@
T A - 25 0 C
Operatmg Temperature Range
Storage Temperature Range
NOTES:
1.
IS SEATING PLANE.
1. POSITIONAL TOLERANCE FOR
LEADS:
m
FIGURE 1 - CONE OF ACCEPTANCE
~
I
~' \
I
~
3.
\
I
I
---fT'--,
~.
Numerical Aperture (NA) = Sin 8
Full Cone of Emittance == 2.0 Sin- 1 (NA)
STYLE I:
PIN 1. ANODE
1. CATHODE/CASE
:
II
,
I
,
I
\
I
\
!\_,
I
1 ... 1 •. 3610.014181 T 1
DIMENSIONING AND
TOLERANCING PER YI4.5, 1973.
DIM
A
8
0
E
F
G
K
M
N
MILLIMETERS
MIN MAX
7.11
6.86
2.54
1.64
0.40
0.48
3.94
4.44
6.17
6.38
2.54 8Se
12.70
45·
NOM
6.22
6.73
INCHES
MIN
MAX
0.170 0.180'
0.100 0.104
0.016 0.019
0.155 0.175
0.143 0.251
0.1008Se
0.500
45·
NOM
0.245 0.265
CASE 338-02
This is advance information and specifications are subject to change without notice.
7-7
•
MFOD104F
ELECTRICAL CHARACTERISTICS IT A = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
10
-
-
2.0
nA
VIBA)A
100
200
-
Volts
VF
-
0.82
1.2
Volts
CT
-
-
4.0
pF
NEP
-
50
-
IW/$z
R
0.15
0.40
-
jlA/jlW
Dark Cu rrent
IVA = 20 V, AL = 1.0 M, H " 0)
Reverse Breakdown Voltage
ilA= 10jlA)
Forward Voltage
IIF = 50 mAl
Total Capacitance
IVA = 5.0 V, I = 1.0 MHz)
Noise Equivalent Power
OPTICAL CHARACTERISTICS IT A = 25°C)
Responsivity @900nm
IVR = 5,0 V, P = 10pW')
Response Time @900nm
ton, toll
-
VR = 5.0 V
12V
20 V
NA
Numerical Aperture of Input Port, 3.0 dB
1200 pm 18 mil J diameter core)
ns
-
6.0
4.0
2.0
0.48
-
*Power launched Into Opttcal Input Port. The designer must account for interface coupling losses.
TYPICAL CHARACTERISTICS
FIGURE 2 - RELATIVE SPECTRAL RESPONSE
,
100
•
80
l
70
II!
80
~
a:
w
>
;::
S
w
a:
o
0.2
a
,
0.3
~
u
~
0.5
0.6
0.7
0.8
X, WAVELENGTH (jIIII)
0.9
1.0
1
0.6
.........
r-- f-
0.2
'"
1.1
-
=~t=-l~--L.-=
-.....
20
'" 4
J"..
~
........ ;:-...
~
O. 1
1.2
'~F
0.5
0.4
~ 0.3
'\.
0.4
.........
1.0
a: O.S
\
/
-
.... r- ~2
.......
~ 2.0
\
\
/
30
~ 3.0
1\
/
40
10
= f=
= r=
/
50
20
10
Sou~OE lO3F
S.O
6.0
IF=50mA
5.0
f---- f- ..
ITA = 250C
~
4.0
L '"\
90
~
FIGURE 3 - DETECTOR CURRENT versus FIBER' LENGTH
40
60
SO
"
100
120
140
160
FISER LENGTH 1m)
ISO
200
220
Fiber Type:
1. Quartz Products QSF200
2. Galilea Galite 3000 lC
3. Valtee PC10
4. DuPont PFXS 120R
7-8
®
MFOD200
MOTOROLA
FIBER OPTICS
NPN SILICON
PHOTOTRANSISTOR
PHOTOTRANSISTOR FOR FIBER OPTICS SYSTEMS
· .. designed for infrared radiation detection in medium length,
medium frequency Fiber Optic Systems. Typical applications
include: medical electronics, industrial controls, security systems,
M6S00 Microprocessor systems, etc.
•
Spectral Response Matched to MFOE100, 200
•
Hermetic Metal Package for Stability and Reliability
•
High Sensitivity for Medium Length Fiber Optic
Control Systems
•
Compatible with AMP Mounting Bushing #227015
r~
MAXIMUM RATINGS ITA = 25°C unless otherwise noted!'
Rating (Note 1)
Collector-Emitter
Volt~ge
Svmbol
Value
Unit
VCEO
40
Volts
Emitter-Base Vol tage
VEBO
10
Volts
Collector-Base Voltage
VCBO
70
Volts
Light Current
'L
250
rnA
Total Device Dissipation @ T A - 2S o C
Derate above 2SoC
Po
250
1.43
rnW
rnW/oC
TJ.Tstg
-55 to +175
°c
Operating and Storage Junction
Temperature Range
K
/
II
0
~
Z
0
w
>
~
\
\
./
0
0
\
V
i!ia:
~j
NOTES:
1. LEADS WITHIN .13 mm (.005) RADIUS
OF TRUE POSITION AT SEATING
PLANE. AT MAXIMUM MATERIAL
CONDITION.
2. PIN 3 INTERNALLY CONNECTED TO
CASE.
1\
/
w
'"o
"
~--1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
FIGURE 1 - CONSTANT ENERGY SFECTRAL RESFONSE
10 0
c
SEATING
PLANE
DIM
A
B
\
/
C
o
\
F
G
H
J
0
0.4
K
0.5
0.5
0.7
0.8
~.
WAVELENGTH
0.9
1.0
1.1
I~m)
7-9
1.2
L
M
MIN
5.31
4.52
6.22
0.41
1.19
MAX
5.84
4.95
6.98
0.48
1.60
2.54 BSC
0.99
1.17
0.S4
1.22
12.70
3.35 4.01
45° SSC
•
MFOD200
STATIC ELECTRICAL CHARACTERISTICS ITA' 25°C unless otherwise noted!
Min
Symbol
Characteristic
Collector Dark Current
IVCC = 20 V, H""O! TA
TA
Max
Unit
-
25
4.0
-
na
I'A
-
= 25°C
= lOOoC
-
Volts
Collector-Base Breakdown Voltage
(lC = 100 "A!
VIBR!CBO
50
Collector-Emitter Breakdown Voltage
IIc = 1001'A!
VIBR!CEO
30
Emitter-Collector Breakdown Voltage
VIBR!ECO
7.0
(IE
Typ
ICEO
-
Volts
Volts
= 100 "A!
OPTICAL CHARACTERISTICS ITA = 25°C!
Characteristic
Symbol
Min
Typ
Max
Unit
Responsivity (Figure 2)
R
14.5
18
-
I'A/I'W
Photo Current Rise Time (Note 1)
tr
-
2.5
-
I'S
tf
-
4.0
IRL
= 100 ohms!
Photo Current Fall Time (Note 1)
IRL = 100 ohms!
I'S
Note 1. For unsaturated response tIme measurements, radiation is provided by pulsed GaAs (gallium-arsenide) light-emitting diode (A
with a pulse w~idth equal to or greater than 10 microseconds, Ie"" 1.0 rnA peak.
<'::;!
900 nm)
FIGURE 2 - RESPONSIVITY TEST CONFIGURATION
1 Meter Galite 1000 Fiber
or
DuPont PIR140
~+20V
~
~Connector
MFOE100
]
D.U.~
TYPICAL CHARACTERISTICS
COUPLED SYSTEM PERFORMANCE versus FIBER LENGTH"
FIGURE 3 - MFOE100 SOURCE
FIGURE 4 - MFOE200 SOURCE
100 0
10
TA - 25°C
TA 0 250C
500
"~
........
.3
...........
........
200
o
:s
10 0
~
50
;0
IF
o
50m0
._If - 100 mA
-.......
~
-......"
1.0
'"
...........
IF-l00mA
;0
"
ffi
'"'"=>
'-'
........
"
B
20
10
"~
.s
o
5.0
10
15
"'- r--...
20
IF 050 mA
0.1
.........
......
.........
0.01
25
.......
o
FIBER LENGTH 1m!
3.0
6.0
9.0
12
15
FIBER LENGTH 1m!
'0.045" Dia. Fiber Bundle, NA '" 0.67, Attenuation at 900 nm '" 0.6 dB/m
7-10
18
21
24
27
30
®
MFOD202F
MOTOROI.A
Advance Infor:rnation
FIBER OPTICS
NPN SILICON
PHOTOTRANSISTOR
PHOTOTRANSISTOR FOR FIBER OPTIC SYSTEMS
.. designed for infrared radiation detection in medium frequency
Fiber Optic Systems. It is packaged in Motorola's Fiber Optic Active
Component (FOAC) case, and fits directly into AMP Incorporated
fiber optic connectors. These metal connecto~s provide excellent R F I
immunity. Typical applications include medical electronics, industrial
controls, security systems, computer and peripheral equipment, etc.
• High Sensitivity for Medium Frequency Fiber Optic Systems
• May Be Used with MFOExxx Emitters
• FOAC Package - Small and Rugged
• Fiber Input Port Greatly Enhances Coupling Efficiency
• Prepol ished Optical Port
• Compatible with AMP Connector #227240-1
• 200/lm [8mil] Diameter Core Optical Port
MAXIMUM RATINGS
(TA
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Light Current
Symbol
Value
Unit
VCEO
VEBO
VCBO
50
10
50
250
250
1.43
-30 to +85
Volts
Volts
IL
Total Device Dissipation @ T A
De;ate above 25 0 C
Operating Temperature Range
Storage Temperature Range
=
W~
= 25 0 C unless otherwise noted).
Rating
25 0 C
PD
TA
T stg
~r ~
Volts
mA
mW
mW/oC
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR/CASE
-ll-o
°C
°C
-30 to +100
K
I
----L
~
L~
NOTES:
I.
IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR
LEADS:
rn
FIGURE 1 - CONE OF ACCEPTANCE
I ...
~-'
I
----fl'--,
~
\
I
\
I
,
I
I
~~ :
Numerical Aperture (NA) ::: Sin (J
Full Cone of Emittance = 2.0 Sin- 1 (NA)
I,
I
\
,,
I
\
\
I
I
1'.3610.014)@1 T
3. DIMENSIONING AND
TOLERANCING PER YI4.5, 1973.
\j
MILLIMETERS
MIN MAX
6.86
7.11
2.64
8
2.54
0
0.40
0.48
4.44
E
3.94
F
6.17
6.3B
G
2.54 BSC
K 12.70
NOM
M 450
N
6.22
6.73
DIM
A
-
INCHES
MIN MAX
0.270 0.280
0.100 0.104
0.016 0.019
0.155 0.175
0.243 0.251
0.100 BSC
0.500
450
NOM
0.245 0.265
CASE 338A-02
This is advance information and specifications are subject to change without notice.
7-11
-
MFOD202F
STATIC ELECTRICAL CHARACTERISTICS
(T A = 25 0 C unle.. otherwise notes)
Symbol
Min
Typ
Max
ICEO
-
5.0
50
nA
CollectorwBase Breakdown Voltage
(lC = 100"AI
V(BR)CBO
50
-
-
Volts
Collector-Emitter Breakdown Voltage
(lC= 100 "A)
V(BRICEO
50
-
-
Volts
Symbol
Min
Typ
Max
Unit
R
70
100
-
"A/"W
t,
-
2.5
-
1"
tf
-
4.0
-
I'S
NA
-
0.48
-
-
Characteristic
Collector Dark Current
(VCC = 20 V, H ~ 0)
OPTICAL CHARACTERISTICS
Unit
(TA = 25 0 CI
Characteristic
Responsivity
(VCC =20 V,RL = 10 11, A" 900 nm, P = 1.0I'W*1
Photo Current Rise Time
(RL = 100111
Photo Current Fall Time
(RL = 100 111
Numerical Aperture of Input Port - Figure 1
(200 I'm [8 mil! diameter corel
*Power Launched into Optical Input Port. The designer must account for interface coupling losses.
TYPICAL CHARACTERISTICS
FIGURE 3 - DETECTOR CURRENT versus FIBER" LENGTH
FIGURE 2 - CONSTANT ENERGY SPECTRAL RESPONSE
10 0
L
II
0
J
/
0
0
0
0.4
"""1\\
/
./
0
5.0
4.0
3.0
2.0:---
I'
\
!....
as
\
~o ~:4
O.
5
0.6
0.9
08
A, WAVELENGTH I.ml
0.7
1.0
1
........
""" ..........
S
ti:i O. 2
\
0.5
......
3
\
I
2
1.0 ~
O.8
~ O.6
o
1.1
O. 1
0.08
0.0 6
0.05 20
1.2
Source: MFDE102F
IF=50mA
~=250C
-
r-.
....... 4
......... .......
3"-- ~
40
60
80
100
120
140
160
180
200
220
FIBER LENGTH (ml
.... FiberType
1. Quartz Products QSF200
2. Galileo G.lit. 3000 LC
3. Valtee PC10
4. DuPont PFXS 120R
7-12
®
MFOD300
MOTOROLA
FIBER OPTICS
NPN SILICON
PHOTO DARLINGTON
TRANSISTOR
PHOTODARLINGTON TRANSISTOR
FOR FIBER OPTICS SYSTEMS
· .. designed for infrared radiation detection in long length, low
frequency Fiber Optics Systems. Typical applications include:
industrial controls, security systems, medical electronics, M6S00
Microprocessor Systems, etc.
•
Spectral Response Matched to MFOE100, 200
•
Hermetic Metal Package for Stability and Reliability
•
Very High Sensitivity for Long Length Fiber Optics
Control Systems
•
Compatible With AMP Mounting Bushing #227015
MAXIMUM RATINGS ITA = 25°C unless otherwise noted).
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Base Vol tage
VEBO
10
Volts
Collector-Base Voltage
VCBO
70
Volts
IL
250
mA
Po
250
1.43
mW
mWloC
TJ.T"g
-5510+175
°c
Light Current
Total Device Dissipation @ TA
=
2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Range
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
FIGURE 1 - CONSTANT ENERGY SPECTRAL RESPONSE
100
II
80
a
/
1\
\
/
/
a
J-t
0.4
~
/
--
0.5
0.6
\
0.8
0.9
MILLIMETERS
INCHES
MIN ' MAX
MIN
MAX
5.31
5.84
0.209 0.230
4.52
B
4.95
0.178 0.195
6.22
6.98 ~245 0.275
C
0
0.41
0.48
0.016 0.019
1.19
0.047 0.063
F
1.60
2.548SC
G
0.100 BSe
H
0.99
1.17
0.039 0.046
J
0.84
1.22
0.033 0.048
K 12.70
0.500
L
3.35
4.01
0.132 0.158
M
45·8Se
45· BSe
DIM
A
\
\
--
0.7
\
NOTES:
1. LEAOS WITHIN .13 mm (.005) RAOIUS
OF TRUE POSITION AT SEATING
PLANE. AT MAXIMUM MATERIAL
CONDITION.
2. PIN 3 INTERNALLY CONNECTEO TO
CASE.
1.0
1.1
1.2
CASE 82-04
'. WAVELENGTH I"",)
7-13
•
MFOD300
STATIC ELECTRICAL CHARACTERISTICS
(TA = 250 C)
Symbol
Min
Typ
Max
Unit
ICEO
-
10
100
nA
V(BAICBO
50
-
-
Volts
V(BA)CEO
30
-
-
Volt.
V(BA)EBO
10
-
-
Volt.
Characteristic
Collector Dark Current
(VCE = 10 V, H ""01
Collector-Base Breakdown Voltage
(lC
= 100llA)
Collector-Emitter Breakdown Voltage
(lC
= 100llAI
Emitter-Base Breakdown Voltage
(IE = 100"A)
OPTICAL CHARACTERISTICS (T A = 25 0 C)
Symbol
Min
Typ
Max
Unit
Aesponsivity (Figure 2)
A
400
500
-
"A/p.W
Photo Current Rise Time (Note 1)
(AL = 100 ohms)
tr
-
40
-
JJS
Photo Current Fall Time (Note 1)
(AL = 100 ohms)
tf
-
60
-
1"
Characteristic
Note 1. For unsaturated response time measurements, radiation is provided by pulsed GaAs (gaIJium arsenidellight·emittingdiode
with a pulse width equal to or greater than SOO microseconds. Ie '" 1.0 rnA peak.
8
<;>... _
900 nm)
FIGURE 2 - RESPONSIVITY TEST CONFIGURATION
1 Meter Galite 1000 Fiber
or
DuPont PIR140
~=,\==:!I,======~=
]
MFOE100
Connector
TYPICAL CHARACTERISTICS
COUPLED SYSTEM PERFORMANCE versus FIBER LENGTH'
FIGURE 3 - MFOE100 SOURCE
FIGURE 4 - MFOE200 SOURCE
...
10
10
TA" 250C-'
5.0
TA" 25°C
;j'
.......
;;:
.s
.s
M
c
~
c
~
~_
'"
Q
Q
t-....
~ 1.0
O. 5
........
.......
'">-
'"
---,--::--
'F"100mA_
~
........
O. I
::>
B
IF-50mA~ ~
'" 0.05
1.0
I-0.1
'F" 100mA=:::
'F" 50 mA
0.0 I
o
0.01
3.0
6.0
9.0
12
15
lB
21
24
27
30
0
'0.045" Dia. Fiber Bundle, N.A. = 0.67, Attenuation at 900 nm
5.0
10
15
20
25
30
FIBER LENGTH 1m)
FIBER LENGTH (m)
=
0.6 dB/m
7-14
35
40
45
50
®
MFOD302F
MOTOROLA
Advance InforIllation
FIBER OPTICS
NPN SILICON
PHOTODARLINGTON
TRANSISTOR
PHOTODARLINGTON TRANSISTOR
FOR FIBER OPTIC SYSTEMS
· .. designed for infrared radiation detection in low frequency Fiber
Optic Systems. It is packaged in Motorola's Fiber Optic Active
Component (FOAC) case, and fits directly into AMP Incorporated
fiber optic connectors. These metal connectors provide excellent
R F I immunity. Typical applications include medical electronics,
industrial controls, security systems, computer and peripheral equip·
ment, etc.
• High Sensitivity for Low Frequency Long Length Fiber Optic
Control Systems
• May Be Used with MFOExxx Emitters
• FOAC Package - Small and Rugged
• Fiber Input Port Greatly Enhances Coupling Efficiency
• Prepolished Optical Port
• Compatible with AMP Connector #227240-1
• 200 J.lm (8 mil) Diameter Core Optical Port
MAXIMUM RATINGS
W~
=-~
(T A = 25 0 C unless otherwise noted).
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Base Voltage
Collector-Base Voltage
VEBO
10
Volts
VCBO
50
Volts
IL
250
rnA
Po
250
1.43
rnW
mW/oC
TA
-30 to +B5
°C
T stg
-30 to +100
°C
Light Current
Total Device Dissipation @ T A
= 250 C
Derate above 250 C
Operating Temperature Range
Storage Temperature Range
STYLE 1:
PIN 1. EMITTER
2. SASE
3. COLLECTOR/CASE
K
I
-.l.
-1l.o
~
L~
NOTES:
1. IT) IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR
LEADS:
FIGURE 1 - CONE OF ACCEPTANCE
I+ I
I
,.36(0.014)@1 T
3. DIMENSIONING AND
niLERANCING PER Y14.5, 1973.
MILLIMETERS
MIN MAX
6.S6
7.11
2.54
2.64
0.40
0.48
3.94
4.44
6.17
6.38
2.54 SSC
G
K 12.70
NOM
M 45°
N 6.22
6.73
DIM
A
B
0
E
F
Numerical Aperture (NA) == Sin ()
Full Cone of Emittance = 2.0 Sin- 1 (NA)
INCHES
MIN MAX
0.270 0.280
0.100 0.104
0.016 0.019
0.155 0.175
0.243 0.251
0.100 SSC
0.500
NOM
45°
0.245 0.265
CASE 338A·02
This is advance information and specifications are subject to change without notice.
7-15
-
•
MFOD302F
STATIC ELECTRICAL CHARACTERISTICS
(TA = 25 0 C)
Characteristic
Collector Dark Current
(VCC= 12 V. H '" O. TA = 250C)
Collector-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
ICEO
-
10
100
nA
V(BR)CBO
50
Volts
V(BR)CEO
40
Volts
V(BR)EBO
10
(lC= 100"A)
Collector-Emitter Breakdown Voltage
(lc = 100"A)
Emitter-Base Breakdown Voltage
-
Volts
(IE = 100"A)
OPTICAL CHARACTERISTICS
(TA
=250 C)
Symbol
Min
Typ
Max
Unit
R
2000
6000
-
"A/"W
Photo Current Rise Time
(RL = 100 ohms)
tr
-
40
-
'"
Photo Current Fall Time
(RL = 100 ohms)
If
-
60
-
"s
NA
-
0.48
-
-
Characteristic
Responsivity
(VCC = 5.0 V. RL = 10
n. /0.., 900 nm. P = 1.0 "W*)
Numerical Aperture of Input Port - Figure 1
(200 "m [8 mill diameter core)
*Power launched into Optical Input Port. The deisgner must account for interface coupling losses.
TYPICAL CHARACTERISTICS
FIGURE 2 - CONSTANT ENERGY SPECTRAL RESPONSE
10 0
•
/'
II
0
0
>
~
a:
\
\
~ 10
~ 8.0
~ 6.0
~ 5.0
~ 4.0
c 3.0
1\
\
1
100
80
60
50
40
30
r-..
.....
§ 20
./
0
0
1
\
/
!lia:
w
~
/
w
'"oz
"
FIGURE 3 - DETECTOR CURRENT versus FIBER' LENGTH
.......
-
-
2.0
0
0.4
0.5
0.6
0.7
0.9
08
I.. WAVELENGTH I.ml
1.0
1.1
1.2
-1
...........
Source: MFOE102F
Ip50mA
TA: 250C
r--..
...2
r--
...... ."'-4
3 .......
~
1.0
20
40
60
80
100
120
140
FIBER LENGTH (m)
""...... lito..
160
180
200
220
• FIBER TYPE
1. Quartz Products OSF200
2. Galileo Gelit. 3000 LC
3. Valtee PC10
4. DuPont PFXS 120R
7-16
®
MOTOROLA
MFOD402F
INTEGRATED DETECTORiPREAMPLIFIER
FOR FIBER OPTIC SYSTEMS
FIBER OPTICS
designed as a monolithic integrated circuit containing both
detector and preamplifier for use in medium bandwidth, medium
distance systems. Packaged in Motorola's Fiber Optic Active Component (FOAC) case, the device fits directly into AMP Incorporated
fiber optic connectors which also provide excellent RFI immunity.
The output of the device is low impedance to provide even less
sensitivity to stray interference. The MFOD402F has a 200 j.lm [8
m ill fiber input with a high numerical aperture.
•
•
•
•
•
•
INTEGRATED DETECTOR
PREAMPLIFIER
Usable for Data Systems Up to 30 Megabaud
Dynamic Range Greater Than 100:1
RF I Shielded in AMP Connector #227240·1
May Be Used with MFOExxx Emitters
FOAC Package - Small and Rugged
Fiber Input Port Greatly Enhances Coupling Efficiency
• Prepolished Optical Port
W~
MAXIMUM RATINGS
IT A = 25 0 C unless otherwise noted).
Rating
Symbol
Value
Operating Voltage
20
Vee
*Total Device Dissipation @ T A - 250 C
250
Po
0
Derate above 25 C
1.43
Operating Temperature Range
-30 to +85
TA
Storage Temperature Range
-30 to +100
Tst9
Unit
Volts
mW
mW/oC
oe
oe
~ .~
STYLE 2:
PIN 1. OUTPUT
2. VCC
3. GROUND/CASE
K
I
--.-l
....jh.-o
~
*Package Limitations.
L~
NOTES:
1. ill IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR
LEADS:
FIGURE 1 - CONE OF ACCEPTANCE
If
1'·36(0.0141@ITI
3. DIMENSIONING AND
TOLERANCING PER Y14.5, 1973.
Numerical Aperture (NA) .. Sin 8
Full Cone of Emittance::: 2.0 Sin- 1 (NA)
-'
MILLIMETERS
DIM MIN MAX
7.11
A 6.86
B
2.54
2.84
D 0.4D
0.48
E 3.94
4A4
F
6.11
638
G
2.54 BSe
K 12.70
NOM
M 45·
N
6.22
6.73
-
INCHES
MIN MAX
0.270 0.280
0.100 0.104
0.016 0.019
0.155 0.175
0.243 0.251
0.100 BSC
0.500
45·
NOM
0.245 0.265
CASE338A-G2
Patent applied for.
7-17
-
•
MFOD402F
ELECTRICAL CHARACTERISTICS
(Vcc = 15 V TA = 26 0 C)
Value
Characteristics
Symbol
Conditions
Min
Typ
Max
ICC
Circuit A
1.4
1.7
2.0
mA
Circuit A
0.6
0.7
0.9
Volts
Resistive Load
Va
ROMax
300
Ohms
COMax
-
-
Capacitive Load
20
pF
Ohms
0.3
-
57
-
pW/...(HZ
5.0
-
15
Volts
-
17.5
-
MHz
Power Supply Current
Quiescent de Output Voltage
Output Impedance
Zo
RMS Noise Output
VNO
NEP
Noise Equivalent Power
Operating Voltage Range
Circuit A
VCC
BW
Bandwidth' (3.0 dB)
-
200
Units
mV
OPTICAL CHARACTERISTICS ITA = 25°C)
Responsivity
(VCC
= 15 V, ~ -
900 nm, P = 10 p.W**)
Pulse Response
Numerical Aperture of Input Core
(200 J,lm [8 mil] diameter core)
R
Circuit B
0.6
1.5
-
mV/p.W
tr,tf
NA
Circuit B
-
20
-
ns
-
0.70
-
-
·Calculated from Step Response.
uPower launched into Optical Input Port. The designer must account for interface coupling losses.
See Application Note AN-804.
FIGURE 3 - TYPICAL APPLICATIONS
FIGURE 2 - eQUIVALENT SCHEMATIC
•
Inpu,}..
~~Da,a
~
c::J
Light
Pipe
In
....----0
Output
Output
Package
MF0D402F
3
' - - -...........- - - 0 Ground
and
Case
7-18
AC
Amp
Comparator
MFOD402F
TEST CIRCUIT A
+15 V
No OPtical
Input
?
V
O.11
F
~
DC Volts
V
Boonton
9280
"M''''._
TEST CIRCUIT B
LED
. -......-
.............- 0
+ 16 V
Optical Fiber
~I
O#lW
o
Oscilloscope
(ac Coupled)
Tektronix
~
(13pF.10M)
P6106 Probe
OUT
~ Optical Power
.
Launched into
Optica' Input Port
APPLICATIONS INFORMATION
The MFOD402F is designed primarily for use in ac
coupled fiber optic receivers as shown in Figure 3. Best
performance is to be obtained with receivers in approximately the 10 MHz (20 Mbs) range. The output is an ac
voltage in the range of 1-100 mV riding on a 700 mV
quiescent dc level. The ac signal should be amplified by a
high·gain amplifier such as an MC1733 or MC1590 and
applied to suitable comparators to transform it into the
desired logic form.
bandwidth, approximately 3 IlW of power from an 8 mil
fiber will typically provide this ratio.
The performance of the device is affected by the capacitance seen at the output port to ground. This should be
held below 20 pF to provide lowest noise operation.
Values above about 50 pF may cause it to oscillate. Lower
capacitance values will cause less overshoot in the transient
response. The transient response is also affected by the
operating voltage. The recommended operating voltage is
15 V, although the device can be operated at 5 V if the
overshoot is tolerable in the particular system. (Figures
4 and 5.) See Application Note AN-794.
For best results, the MFOD402F should be inserted
into an AMP metal fiber optics connector with the case,
circuit ground, and metal connector all grounded. This
will minimize RFI and lower the error rate observed
in the system.
The device is designed for use with 8 mil (200 Ilm)
fiber optic cables. This size is becoming standard in com·
puter use. and is well designed for the frequency range
common in this equipment.
A typical operating system should be designed to deliver
a suitable amount of power to provide at least a 10 dB
signal to noise ratio. If the system is operated at maximum
7-19
MFOD402F
FIGURE 4 - OUTPUT WAVEFORM WITH Vee = 15 V
FIGURE 5 - OUTPUT WAVEFORM WITH Vee = 5.0 V
•
7-20
®
MFOD404F
MOTOROLA
INTEGRATED DETECTOR/PREAMPLIFIER
FOR FIBER OPTIC SYSTEMS
FIBER OPTICS
· .. designed asa monolithic integrated circuit containing both detector and preamplifier for use in medium bandwidth, medium distance
systems. It joins Motorola family of Straight Shooter devices
packaged in the Fiber Optic Ferrule case. The device fits directly into
AMP Incorporated fiber optic connectors which also provide
excellent RFI immunity. The output ofthedevice is low impedance to
provide even less sensitivity to stray interference. The MFOD404F
has a 200 I'm (8 mil) fiber input with a high numerical aperture.
INTEGRATED DETECTOR
PREAMPLIFIER
• Usable for Data Systems up to 10 Megabaud
• Dynamic Range Greater than 100:1
• RFI Shielded in AMP Connector #227240-1
• May be Used with MFOExxx Emitters
• Ferrule Package - Small and Rugged
• Fiber Input Port Greatly Enhances Coupling Efficiency
• Prepolished Optical Port
MAXIMUM RATINGS ITA ~ 25°e unless otherwise noted)
Rating
Supply Voltage
Operating Temperature Range
Storage Temperature Range
Symbol
Value
Unit
Vee
7.5
Volts
TA
-30 to +85
°e
T stg
-30 to +100
°e
~'"
f1:~
ti
=1
~Nl.
~om
K
2. +VOUT
3. GNO/CASE
4. +VCC
FIGURE 1 -
~
-11-0
~
EQUIVALENT SCHEMATIC
l
1;~~3
N
r-----------------,
~
G
4'/
I
I
I
NOTES:
1.
IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR LEADS:
m
I
---r--"
Internal
I
Light
Pipe
Inverted
Output
I
c:=:J
I, I~
3.
I I
0.36 (0.014) @ T
DIMENSIONING AND TOLERANCING
PER Y14.5, 1973.
t - - - - j - - - ' - - 0 Non-Inverted
Output
I
I
I
L--~--~---~--~-~-~~-II-~Gnd/ease
IL ______ _
_
_ _ _ _ _ _ .J
DIM
A
B
C
D
E
G
K
M
N
MILLIMETERS
MIN MAX
7.11
6.B6
2.54
2.64
10.16 lO.BO
0.40
O.4B
3.94
4.44
2.54 SSC
12.70
450 SSC
6.22
6.73
INCHES
MIN
MAX
0.270 0.2BO
0.100 0.104
0.400 0.415
0.016 0.D19
0.155 0.175
0.100 SSC
0.500
450 SSC
0.245 0.265
CASE 3388-01
Patent applied for.
7-21
•
MFOD404F
ELECTRICAL CHARACTERISTICS (VCC = 5.0 V. TA = 25°C)
Symbol
Conditions
Min
Typ
Max
Power Supply Current
ICC
Circuit A
3.0
3.5
5.0
mA
Quiescent dc Output Voltage (Non-Inverting Output)
Vq
Circuit A
0.5
0.6
0.7
Volts
Circuit A
2.7
3.0
3.3
Volts
-
200
-
Ohms
Characteristics
Units
Quiescent de Output Voltage (Inverting Output)
Vq
Output Impedance
Zo
RMS Noise Output
VNO
CircurtA
-
0.4
1.0
mV
R
Circuit B
20
30
35
50
mV/~W
Circuit B
-
35
50
ns
-
-
OPTICAL CHARACTERISTICS (TA = 25°C)
Responsivity (VCC = 5.0 V. P = 2.0
~W')
A = 900 nm
A = 820 nm
Pulse Response
tr.tf
Numerical Aperture of Input Core
(200 ~m (8 mill diameter core)
NA
Signal-to-Noise Ratio @ Pin = 1.0 ~W peak'
SIN
Maximum Input Power for Negligible Distortion in
Output Pulse*
-
0.70
-
35
-
dB
-
30
~W
Volts
RECOMMENDED OPERATING CONDITIONS
Supply Voltage
VCC
4.0
5.0
6.0
Capacitive Load
CL
-
-
100
Input Wavelength
A
-
900
pF
-
nm
*Power launched into Optical Input Port. The designer must account for interface coupling losses.
FIGURE 2 - TYPICAL PERFORMANCE OVER
OPERATING TEMPERATURE RANGE
TEST CIRCUIT A
+5.0V
tr
~
No
",'
.1-'_
- - =-=-
-
~
.~r-
.
"-- - ?
,
p'
--::::-::
~-
.- ......- -
..-"
-
R
~
-r-
ICC0;-
Vq+
-
Inverting
1-
1
10 20
30 40
TEMPERATURE. °c
50
60
70
O.I)F
6
V
-30 -20 -10
I
~on-Inverting
Vq- _
f--
"'--= '::"::
~.OII'~.OI'F
-=
80
V
DC Volts
Boonton
92BD
RF
Millivoltmeter
-=-
TEST CIRCUIT B
•
O%
~
LED
tf
80%
tr
Optical Fiber
J--OOOO--IT
pW=250ns~
~W
rI
o -----J
L-2.0
Tektronix
P6106 Probe
(13 pF.IO M)
Optical Power
Launched into
Optical Input Port
7-22
Oscilloscope
(ac Coupled)
MFOD404F
FIGURE 3
FIGURE 4
+Vout
+Vout
- V out
-Vaut
MFOD404F response to psuedo-random bit stream input with
average optical input power of 1.0 microwatt. Note the good
quality eye pattern at 10 Mbits per second, Vee = 5.0 V.
Pulse response of MFOD404F to square wave input with peak
optical input power of 2.0 microwatts at Vee:::: 5.0 V.
APPLICATIONS INFORMATION
The basic function of the MFOD404F integrated detector/preamplifier is to convert an optical input into a
vol (age level proportional to the received optical power.
Within the package is a monolithic chip having the detector diode and a transimpedance amplifier with emitter
follower isolation amplifiers on both the inverted and
non-inverted outputs. A high level of RFIIEMI immunity is
provided by this detector circuit.
The MFOD404F is in the Motorola ferrule fiber optic
semiconductor package with a 200 I'm fiber core input.
With the AMP connector, #227240-1, these ferrule
devices are easily and precisely assembled into systems,
can be connected to plastic or glass cable of almost any
diameter and are easily interchanged for system modification or upgrade. Mechanics of the use of the ferrule
devices and basic optic system losses are presented in the
Motorola Application Note AN-804.
FIGURE 5
AMP Bushing ~
227240-t
~
--
Motorola Ferrule
Semiconductor
Press-On
Retention ____
Plate
~
~JamNut
~
--........
/'
AMP Ferrule
Connector
Lockwasher
'"
ift?~. ,/1
,/
---.... ~ ...-./
,y'
I
~
I
&_----
Self-Tapping
Screws
7-23
Motorola ferrule semiconductors
fit directly into AMP terminating
bushing #227240-1.
MFOD404F
APPLICATIONS INFORMATION (continued)
A Simple. 10 Mbps Fiber Optic Link
milliamperes. Since the receivers sensitivity is 0.1 microwatts average power for 10-9 BER (Bit Error Rate) at data
rates up to 10 Mbps NRZ. reliable communications links
can be constructed up to 500 meters in length while
providing both a 6.0 dB power margin for LED time and
temperature degradation and 3.0 dB for connector loss at
the receiver (worst case design). In addition. since the
receiver dynamic range exceeds 20 dB. there is no danger
of overloading the receiver in short link length applications.
The schematic diagram in Figure 6 illustrates how
easily a high performance fiber optic link can be constructed with low-cost commercially available components when ~sed on the MFOD404F integrated detector I
preamplifier.
When used with the ·fiber indicated in Figure 6. 'the
MFOEl 03F conservatively launches a peak power of 5.0
microwatts when driven with a pllak current of only 50
+5.0V
Transmitter
FIGURE 6 - 10 Mbps LINK SCHEMATIC DIAGRAM
68 n
Data
MFOE103F
Input
3
Optical Cable
ITT - T1302 Fiber
Transmitter
Enable
or Equivalent
(10 d8/km @ 900 nm)
+5.0V
+5.0 V
+5.0V
+5.0 V
+5.0V
27 k
1.0"F
MC75140
2.4k
15k
+
2.4k
Output
510n
11 k
•
2.4k
2.4k
1.01'F
27 k
0.1 "F
+5.0V
+5.0V
Receiver
+5.0V
7-24
27k
®
MFOD40SF
MOTOROLA
INTEGRATED DETECTOR/PREAMPLIFIER
FOR FIBER OPTIC SYSTEMS
FIBER OPTICS
· .. designed as a monolithic integrated circuit containing both detector and preamplifier for use in computer, industrial control, and
other communications systems.
Packaged in Motorola's Ferrule case, the device fits directly into
AMP Incorporated fiber optic connectors which also provide
excellent RFI immunity. The output of the device is low impedance to
provide even less sensitivity to stray interference. The MFOD405F
has a 200 I'm (8 mil) fiber input with a high numerical aperture.
•
Usable for Data Systems Through 40 Megabaud
•
Dynamic Range Greater than 100:1
•
RFI Shielded in AMP Connector #227240-1
•
May be Used with MFOExxx Emitters
•
Ferrule Package -
•
Fiber Input Port Greatly Enhances Coupling Efficiency
•
Pre polished Optical Port
INTEGRATED DETECTOR
PREAMPLIFIER
Small and Rugged
MAXIMUM RATINGS ITA; 25°C unless otherwise noted)
Rating
Supply Voltage
Operating Temperature Range
Storage Temperature Range
Symbol
Value
Unit
Vee
7.5
Volts
TA
-30 to +85
°e
Tstg
-30 to +100
°e
STYLE 1:
PIN 1.
2.
3.
4.
-VOUT
+VOUT
GNO/CASE
+VCC
K
J
FIGURE 1 - EQUIVALENT SCHEMATIC
,---I
--,
r---~----~--~--~--~--~--~Vee
Internal
~--;---<>
light
I
Pipe
I
c=J,
~_-+-
I
Inverted
Output
NOTES:
1.
2.
OJ IS SEATING PLANE.
POSITIONAL TOLERANCE FOR LEAOS:
I• I
__!--<> Non-Inverted
Output
I
I
I I
II 0.3610.0141 @ T
OIMENSIONING ANO TOLERANCING
PER Y14.5, 1973.
3.
L---4--~~--4--+---4-~~--r--oGnd/ease
IL ______ _
_
_ _ .J
DIM
A
B
C
D
E
G
K
M
N
MILLIMETERS
MIN
MAX
6.86
7.11
2.64
2.54
10.16 10.80
0.48
0.40
3.94
4.44
2.54 BSC
12.70
450 BSC
6.73
6.22
INCHES
MAX
MIN
0.270 0.280
0.100 0.104
0.400 0.425
0.016 0.019
0.155 0.175
0.100 BSC
0.500
450 BSC
0.245 0.265
CASE 3388-01
Patent applied for.
7-25
-
MFOD406F
ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, TA = 25°C)
Symbol
Conditions
Min
Typ
Max
Power Supply Current
ICC
Circuit A
3.0
4.5
6.0
mA
Quiescent de Output Voltage (Non-Inverting Output)
Vq
Circuit A
0.6
0.7
0.8
Volts
Circuit A
2.7
3.0
3.3
Vails
200
-
Ohms
0.5
1.0
mV
Characteristics
Quiescent de Output Voltage (lnverling Output)
Vq
Output Impedance
Zo
RMS Noise Output
VNO
Circuit A
-
Units
OPTICAL CHARACTERISTICS (TA = 25°C)
R
Circuit B
3.0
4.5
7.0
mV/!'W
Pulse Response
tr,lf
Circuit B
-
10
15
ns
Numerical Aperture of Input Core
(200 I'm [8 mill diameter core)
NA
-
0.70
-
-
Signal-to-Noise Ratio @ Pin = 2.0!,W peak'
SIN
-
24
VCC
4.0
CL
-
Responsivitv (VCC = 5.0 V, h = 820 nm, P = 10 !'W')
Circuit B
Maximum Input Power for Negligible Distortion in
Output Pulse*
-
-
d8
120
!'W
5.0
6.0
Volts
-
lqO
RECOMMENDED OPERATING CONDITIONS
SupplV Voltage
Capacitive Load (Either Output)
Input Wavelength
h
pF
-
820
nm
·Power launched mto Optical Input Port. The designer must account for interface coupling losses as discussed In AN-804.
FIGURE 2 - TYPICAL PERFORMANCE OVER
OPERATING TEMPERATURE RANGE
::a~
=....
~3
""
::;;>
00
z~
UN
.... 0
- >-
~
,-'"
~
~:z:
->a:~
1.2
1.1
TEST CIRCUIT A
R
1.6
1.5
1.4
1.3
./
./
+5.0V
tr,tf
. ~.
No
/.
./
::-:,- ~
1.0
0.9
0.8
0.7
0.6 ~-
- ......... 10-.
.- -
=
....... ' /
.........
A'
--:/
./.V
- -.-- ----'
t--
:-...:::.
Vq-
l'0l!,~.O!'F
Inverting
ICC
Vq+
1
6
V
-20
20
40
TEMPERATURE, °C
60
I
~Non-Inverting
O.)lF
-=
80
V
DC Volts
Boonton
9280
-::- RF
Millivoltmeter
TEST CIRCUIT B
•
LED
tf
~
Pulse
Generator
pW=50ns~
Tektronix
P6106 Probe
(13 pF, 10 M)
10!'W"
o
--I
.
L - OptIcal
Power
Launched into
Optical Input Port
7-26
Oscilloscope
(ac Coupled)
MFOD405F
FIGURE 3
FIGURE4
Output waveform in response to a 50 nanosecond, 6.0 microwatt
optical input pulse.
Eye-pattern generated by pseudo-random bit stream at 40 Mb/s.
APPLICATIONS INFORMATION
The basic function of the MFOD405F integrated detector/preamplifier is to convert an optical input into a
voltage level proportional to the received optical power.
Within the package is a monolithic chip having the detector diode and a transimpedance amplifier with emitter
follower isolation amplifiers on both the inverted and
non-inverted outputs. The device in the connector
assembly is virtually immune to RFI/EMI. The IDP circuit
itself provides a high level of RFI/EMI immunity. EMI
pickup althe input of afiber optic receiver can be a potential problem, but as the MFOD405F is a single monolithic
chip this function between the optical port and the receiver
is quite small and essentially eliminates this source of
EMI. Finally, the whole device is mounted inside the AMP
metal connector with a special RFI/EMI shielding option.
The MFOD405F is in the Motorola ferrule fiber optic
semiconductor package with a 200 I'm fiber core input.
With the AMP connector, #227240-1, these ferrule
devices are easily and precisely assembled into systems,
can be connected to plastic or glass cable of almost any
diameter and are easily interchanged for system modification or upgrade. Mechanics of the use of the ferrule
devices and basic fiber optic system losses are presented
in the Motorola Application Note AN-804.
tfJ!
FIGURE 5
AMPBUShing~
227240-1
~'Q ~
"
Motorola Ferrule
Semiconductor
Press-On
Retention
Plate
~
~t)
~ .'
~~
~
/_
_
/-
---.......~
~/
AMP Ferrule
Connector
Jam Nut
Lockwasher
/.
",V'
__ /
~
I-
~I
/"
...............
,
I
~
_._____ Self-Tapping
Screws
7-27
Motorola ferrule semiconductors
fit directly into AMP terminating
bushing #227240-1.
•
MFOD405F
APPLICATIONS INFORMATION (continued)
40 Mb/s FIBER OPTIC LINK USING MFOD405F DETECTOR
The attached figure shows a receiver capable of
operation at data rates in excess of 40 Mbps when driven
by a suitably fast LED. The quasi-differential output olthe
MF0040SF is amplified by a two-stage differential
amplifier consisting of two stages of an MCl 0116 MECL
line receiver. It is important to utilize MECL layout
practices in this receiver because of the very high data
rates of which it is capable. The receiver requires about
S.O microwatts of optical input power to drive the output
wfull MECL logic levels. The attached photograph of the
eye-pattern at 40 Mb/s shows the capability of very clean
data transmission at this speed. The transmitter shown
can drive fast LEO's to suitable speeds for use with
this receiver.
Further suggestions for circuits using the MF0040SF
can be found in an article by R. Kirk Moulton in Electronic
Design of March 1. 1980.
FIGURE 6
L
ED
I
Eve-pattern output of receiver operating at 40 Mb/s.
FIGURE 7
+5.0Vo---~~-_-.,
TRANSMITTER
1
24
24
MECL
Input
Optical
Vbb
Fiber
220
220
75
-5.2V
, . . - - _ -...--oVbb(Pin 11)
1.0k 1.0k
•
RECEIVER
A'":;'--,:--=l~---""--':j ~A5'--t----<::1 Output
220
220
~---------------i----~--~--------~--4---~-5.2V
*0.1
Ul - MFOD405F
U2A. U2B. U3 - 1/3 MC10116
01. 02 - 2N2369
7-28
®
MOTOROLA
MFOE100
INFRARED EMITTING DIODE FOR
FIBER OPTICS SYSTEMS
· .. designed as an infrared source in medium frequency, short
length Fiber Optics Systems. Typical applications include: medical
electronics, industrial controls, M6800 Microprocessor systems,
security systems, etc.
IR-EMITTING DIODE
FOR
FIBER OPTICS SYSTEMS
• Spectral Response Matched to MFOD100, 200, 300
•
Hermetic Metal Package for Stability and Reliability
•
Fast Response - 50 ns typ
• Compatible With AMP Mounting Bushing #227015
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current-Continuous
Total Device Dissipation
Derate above 2SoC
@
TA
Symbol
Value
Unit
VR
3.0
100
250
2.5
-55 to +125
Volts
IF
=
2S o C
PO(11
Operating and Storage Junction
TJ. T stg
rnA
mW
mWf'C
°c
Temperature Range
SEATING
PLANE
THERMAL CHARACTERISTICS
~
Charactersitics
Thermal Resistance, Junction to Ambient
Symbol
8JA
~
Max
400
Unit
°C/W
(1) Printed Circuit Board Mounting
STYLE I:
FIGURE 1 - LAUNCHED POWER TEST CONFIGURATION
PIN 1. ANODE
PIN 2. CATHOOE
NOTES:
1. PIN 2 INTERNALLY CONNECTEO
TO CASE
2. LEAOSWITHIN 0.13 mm(0.0051
RADIUS OF TRUE POSITION AT
SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
1 Meter Galite 1000 OPtical Fiber
~=\~/===-PL
]
D.U.T.
Connector
DIM
A
B
o
F
G
H
J
K
L
M
7-29
MILLIMETERS
MIN
MAX
5.31 5.84
4.52 4.95
6.22
.98
0.41 0.48
1.19 1.60
2.54 a
0.99 1.17
0.84 1.22
12.10
3.35 4.01
450 asc
CASE 209~2
•
MFOE100
ELECTRICAL CHARACTERISTICS (TA ·2S0 C)
Characteristic
Reverse Leakage Current
(VR
Fig. No.
=3.0 V. RL = 1.0 Magohm)
Reverse Breakdown Voltage
(lR 100 "A)
Forward Voltage
(IF -100mA)
=
Total Capacitance
(VR = 0 V. I = 1.0 MHz)
OPTICAL CHARACTERISTICS (TA
=
Typ
Max
Unit
-
SO
-
nA
V(BR)R
3.0
-
-
Volts
VF
-
1.5
1.7
Volts
-
CT
-
100
-
pF
1.2
Po
700
1000
-
/loW
3
PL
14
20
-
/loW
-
ton. toll
-
50
-
ns
= 100 mA, A .. 900 nm)
Power Launched (Note 2)
(IF = 100 mAl
Optical
Min
IR
2S0 C)
Total Power Output (Note 1)
(IF
Symbol
-
Turn~On
and
Turn~Off
Time
1. Total Power Output, Po, is defined as the total power radiated by the device into a solid angle of 211' steradians.
2. Power Launched, PL. is the optical power exiting one meter of 0.045" diameter optical fiber bundle having NA = 0.67.
Attenuation = 0.6 dB/m @ 900 nm, terminated with AMP connectors. (See Figure 1,)
TYPICAL CHARACTERISTICS
FIGURE 2 - INSTANTANEOUS POWER OUTPUT
versus FORWARO CURRENT
I
~
1=
20
10
0
f-
TJ
0
5.0
.......... ['-.....Galite 1000
..........
1/
~ 2.0
~
I
25 0C
::>
~
FIGURE 3 - POWER OUT OF FIBER varsus FIBER LENGTH
V
1.0
0
~
t'--- I'--.
TA = 25°C
IF = 100mA
~ 0.5
.,~
~
0
.,
;: 0.2
0.1
0.02 I
2.0
3. O
5.0
10
20
50
100
200
500
1.0
1000 2000
iF, INSTANTANEOUS FORWARD CURRENT (rnA)
7-30
'"
~tjiFaX Plj140
0
~O.05
2.0
3.0
I r-- t -
4.0
5.0
S.O
FIBER LENGTH (m)
7.0
8.0
9.0
10
®
MOTOROLA
MFOE102F
Advance InforIDation
FIBER OPTICS
INFRARED EMITTING DIODE FOR
FIBER OPTIC SYSTEMS
IR-EMITTING DIODE
designed as an infrared source for Fiber Optic Systems. It is
packaged in Motorola's Fiber Optic Active Component (FOAC) case,
and fits directly into AMP Incorporated fiber optics connectors for
easy interconnect and use. Typical applications include medical
electronics, industrial controls, M6800 microprocessor systems,
security systems, computer and peripheral equipment, etc.
•
•
•
•
Fast Response - 25 ns typ
May Be Used with MFODxxx Detectors
FOAC Package - Small and Rugged
Fiber Output Port Greatly Enhances Coupling Efficiency
• Optical Port is Prepolished
• Compatible with AMP Connector #227240·'
• 200ILm [8 mill Diameter Core Optical Port
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
3.0
Volts
Forward Current-Continuous
IF
100
mA
Total Device Dissipation @ T A = 25 0 C
Derate above 25 0 C
Operating Temperature Range
Storage Temperature Range
Po
mW
TA
T stg
250
2.5
-30 to +85
mw/oe
oe
-30 to +100
oe
Symbol
Max
Unit
°JA
400
°e/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient
STYLE 1:
PIN 1. ANOOE
2. CATHODE/CASE
NOTES:
1. OJ IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR
LEADS:
FIGURE 1 - CONE OF RADIATION
eI
I ... I •.
I
36(0.014)
T
3. DIMENSIONING AND
TOLERANCING PER Y14.5. 1973.
MILLIMETERS
DIM MIN MAX
A
6.BS
7.11
B
2.54
2.64
D
0.40
0.48
E
3.94
4.44
F
6.17
6.38
G
2.54 SSC
K 12.70
M 45'
NOM
N
6.22
6.73
Numerical Aperture (NA) >= Sin f)
Full Cone of Emittance = 2.0 Sin- 1 (NA)
-
INCHES
MIN MAX
0.270 0.280
0.100 0.104
0.016 0.019
0.155 0.175
0.243 0.251
0.100 SSC
0.500
NOM
45'
0.245 0.265
CASE 338-02
This is advance information and speCification, .r. subject to change without notice.
Patent applied for.
7-31
-
MFOE102F
ELECTRICAL CHARACTERISTICS
ITA = 25 0 C)
Symbol
Min
Typ
Max
Unit
IR
-
50
-
nA
VIBR)R
3.0
-
-
Volts
Forward Voltage
(IF = 50mA)
VF
-
1.2
1.5
Volts
Total Capacitance
IVR =OV,f= 1.0 MHz)
CT
-
45
-
pF
Total Power Output From Optical Port
(I F = 50 mA, A '" 900 nm)
Po
40
70
-
I'W
Numerical Aperture of Output Port (Figure 1)
NA
-
0.70
-
-
Wavelength of Peak Emission
-
-
nm
-
-
900
Spectral Line Half Width
Characteristic
Reverse Leakage Current
IVR
= 3.0 V, RL = 1.0 Megohm)
Reverse Breakdown Voltage
(lR
= 100l'Al
OPTICAL CHARACTERISTICS
(T A
= 25 0 C)
1200 I'm [B mill diameter core)
Optical Turn-On or Turn-Off Time
ton, toff
50
-
nm
25
-
ns
TYPICAL CHARACTERISTICS
FIGURE 2 - INSTANTANEOUS POWER OUTPUT
versus FORWARD CURRENT
2.0
~
1.0
§
'"
~
0.200
"l
0.100
fil
z
0.050
~
FIGURE 3 - POWER OUT OF FIBER· versus FIBER LENGTH
100
BO
60
......
0.500
~
~u:
c
I-
:::>
0.020
'"'"
~
0.010
!2
.,;
20
u.
~
~
40
30
~
.. 0.005
10
B.O
6.0
5.0
4.0
3.0
r-
I--
r-...
IF -50 rnA
TA-25 0 C
-
~
r--
'"
.........
-.....
2.0
""'"~ ~ ......
~3
1.0
20
0.002
2.0
•
5.0
50
100
200
500 1000
10
20
IF. INSTANTANEOUS FORWARD CURRENT (rnA)
2000
3.0
c
W
~ 2. 0
~
c
l'O
I-
~::>
c
1.0
'"3: o. 7
~
~
;) o. 5
t
...
'"
........
"" ""'-
c
~
O.3
-75
-50
-25
0
25
50
75
TJ,JUNCTION TEMPERATURE (DC)
40
~
~
~
rn
~
~
~
~
lli
FIBER LENGTH 1m)
*FiberType
1. Quartz Products QSF200
2. Galileo Galite 3000 LC
3. Vallee PC10
4. DuPonl PFXS 120R
FIGURE 4 - OPTICAL POWER OUTPUT
versus JUNCTION TEMPERATURE
N
2
100
7-32
®
MFOE103F
MOTOROLA
Advance InforIDation
FIBER OPTICS
INFRARED EMITTING DIODE FOR
FIBER OPTIC SYSTEMS
IR·EMITTING DIODE
. designed as an infrared source for Fiber Optic Systems. It is
packaged in Motorola's Fiber Optic Active Component (FOAC) case,
and fits directly into AMP Incorporated fiber optics connectors for
easy interconnect and use. Typical applications include medical
electronics, industrial controls, M6800 microprocessor systems,
security systems, computer and peripheral equipment, etc.
•
•
•
•
Fast Response - 15 ns typ
May Be Used with MFODxxx Detectors
FOAC Package - Small and Rugged
Fiber Output Port Greatly Enhances Coupling Efficiency
• Optical Port is Prepolished
• Compatible with AMP Connector #227240-1
• 200/-lm [8 mil) Diameter Core Optical Port
MAXIMUM RATINGS
Rating
Symbol
Value
Forward Current-Continuous
VA
IF
Total Device Dissipation @ T A == 250 C
Po
3.0
100
250
2.5
-30 to +85
-30 to +100
MW
mWJOC
Max
400
Unit
oCIW
Reverse Voltage
Derate above 250 C
Operating Temperature Range
Storage Temperature Range
TA
Tstg
Unit
Volt.
mA
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient
Symbol
I
6JA
I
STYlE 1:
PIN 1. ANOOE
2. CATHOOE/CASE
NOTES:
1. [jJ IS SEATING PLANE.
2. POSITIONAL TOLERANCE FOR
LEAOS:
1 ... 1 ,.36(0.014)0 I T I
3. DIMENSIONING ANO
TOLERANCING PER Y14.5, 1973.
FIGURE 1 - CONE OF RADIATION
/~\
~
I
\
I
I
\
I
==[t::J~;
,
Numerical Aperture (NA) == Sin 6
Full Cone of Emittance = 2.0 Sin- 1 INA)
I
\
\
I
I
\
,_/
I
DIM
A
B
0
E
F
G
K
M
N
MilliMETERS
MIN MAX
7.11
6.88
2.54 2.64
0.40
0.48
3.94
4.44
6.17
6.38
2.54 BSC
12.70
NOM
45·
6.22 6.73
INCHES
MIN MAX
0.270 0.280
0.100 0.104
0.016 0.019
O.ISS 0.175
0.243 0.251
0.100 BSC
0.500
45·
NOM
0.245 0.265
CASE 338-02
This is advance Information and specifications are subject to change without notice.
Patent applied for.
7-33
•
MFOE103F
ELECTRICAL CHARACTERISTICS
= 25 0 C)
(TA
Symbol
Min
Typ
Max
Unit
IR
-
50
-
nA
V(BR)R
3.0
-
-
Volts
VF
-
1.2
1.5
Volts
CT
-
45
-
pF
Po
40
70
-
jlW
NA
-
0.70
-
-
Wavelength of Peak Emission
-
-
nm
-
-
900
Spectral Line Half Width
50
-
nm
15
22
ns
Characteristic
Reverse Leakage Current
(VR = 3.0 V, RL = 1.0 Megohm)
Reverse Breakdown Voltage
(lR = 1001'A)
Forward Voltage
(IF =50mA)
Total Capacitance
(VR = 0 V, f= 1.0 MHz)
OPTICAL CHARACTERISTICS
ITA = 25 0 C)
Total Power Output From Optical Port
(IF = 50 rnA,
~~
900 nm)
Numerical Aperture of Output Port (Figure 1 )10.0 dB
(200 I'm [8 mill diameter core)
Optical Turn·On or Turn·Off Time (IF - 100 rnA)
ton, toff
TYPICAL CHARACTERISTICS
i
FIGURE 2 - INSTANTANEOUS POWER OUTPUT
versus FORWARD CURRENT
2. 0
~ 1.0
~ 0.500
FIGURE 3 - POWER OUT OF FIBER' versus FIBER LENGTH
,
'"3!
0.200
~
0.100
~
'"w
'"u::
zffi
;!
0.050
I-
~
IF-SOmA
TA 25'C
1
20
0
10
B.O
6.0
5.0
4.0
~
3.0
.....
/
2
:::>
0
3
'"3!
~
:!; 0.01 0
ci
r---
I--
40
30
u.
:;: 0.020
a..
,
100
BO
60
0.00 5
~~
~~~
2.0
1.0
20
0.00 2
2.0
•
5.0
50
100
200
500 1000
10
20
iF, INSTANTANEOUS FORWARO CURRENT (mAl
2000
~
~ 2.0
o
~
I-
:::>
:=
:l
1.0
'"w,.
O.1
o
~
~
~
to
~
o. 5
~
rn
~
~
~
~
FIBER LENGTH (m)
3. Siecor 155
4. DuPont PFXS 120R
...
"'
.......
"'"'" .........
O.3
-15
M
1. M.xlight KSC200B
2. G.lite 3000 LC
3.0
!
M
*FiberType
FIGURE 4 - OPTICAL POWER OUTPUT
versus JUNCTION TEMPERATURE
N
40
........
..........
41
-50
-25
0
25
50
15
TJ, JUNCTION TEMPERATURE I'C)
100
7-34
m
®
MFOE106F
MOTOROLA
Advance Information
FIBER OPTICS
NEW GENERATION AIGaAs LED
IR-EMITTING DIODE
Specifically designed for Fiber Optics. This high·power, 820 nm
LED is packaged in Motorola's Fiber Optic Ferrule case, and fits
directly into AMP, Incorporated fiber optics connector #227240-1
for easy interconnect use. Typical applications include medical
electronics, industrial controls, M6800 microprocessor systems,
security systems, computer and peripheral systems, etc.
•
•
•
•
•
•
•
Fast Response - 12 ns typ
May Be Used with MFODxxx Detectors
Ferrule Package - Small and Rugged
Fiber Output Port Greatly Enhances Coupling Efficiency
Optical Port is Prepolished
Compatible with AMP Connector #227240·'
200/.lm [B mil] Diameter Core Optical Port
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current-Continuous
Total Device Dissipation @ T A
= 25 0 C
Symbol
Value
Unit
VR
3.0
Volts
IF
150
mA
Po
mW
mW/oC
TA
T sto
250
2.5
-30 to +85
-30 to +100
Symbol
Max
Unit
9JA
175
°C/W
Derate above 250 C
Operating Temperature Range
Storage Temperature Range
CASE 3380·01
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient
FIGURE 1 - CONE OF RADIATION
~'
I
I
I
I
\
\
,
,
==[[::J~;I
~
Numerical Aperture (NA) "" Sin 8
Full Cone of Emittance
= 2.0 Sin- 1 (NA)
This II advance Information and specifications ar. subject to change without notice.
Patent applied for.
7-35
,
I
I
I
\
_/
I
•
MFOE106F
ELECTRICAL CHARACTERISTICS
(TA
= 25 0 C)
Characteristic
Reverse Leakage Current
(VR
Symbol
Min
Typ
Max
Unit
IR
-
50
-
nA
3.0
-
-
Volts
= 3.0 V, RL = 1.0 Megohm)
Reverse Breakdown Voltage
OR = l00I'AI
V(BR)R
Forward Voltage
OF = 50mA)
VF
-
1.2
1.5
Volts
Total Capacitance
CT
-
450
-
pF
Po
-
700
-
"W
NA
-
0.50
-
-
(VR
= 0 V, f = 1.0 MHz)
OPTICAL CHARACTERISTICS
(T A = 25 0 C)
Total Power Output From Optical Port
(IF = 100 mA, A '" 820 nm)
Numerical Aperture of Output Port (Figure 1 )10.0 dB
(200 I'm [8 mil] diameter core)
Wavelength of Peak Emission
-
-
820
Spectral Line Half Width
-
-
35
-
nm
Turn~On
ton,toff
-
12
20
ns
Optical
or Turn-Off Time
TYPICAL CHARACTERISTICS
FIGURE 2 - POWER OUT OF FIBER" versus FIBER LENGTH
600
t-..
r--..
~
"-
0.1
4
~ ~5
~
~
"3
f":::::
......
.......
"-
I
"" r":: I--t' I.
1
2,-'
0
6. 0
o
"-
6
1.0
FIBER LENGTH (km)
1. Beldon 220001
2. OuPont S120
3. Siecor 1558
4. Maxlight KSC200B
5. Galite 3000LC
6. Siecor 142
I.T.T. T1302
1. Galite 5020
7-36
..........
'<....
*FiberType
•
........
2.0
nm
®
MFOE200
MOTOROLA
INFRARED EMITTING DIODE FOR
FIBER OPTICS SYSTEMS
· .. designed as an infrared source in low frequency, short length
Fiber Optics Systems. Typical applications include: medical
electronics, industrial controls, M6800 Microprocessor systems,
security systems, etc.
•
•
High Power Output Liquid Phase Epitaxial Structure
Spectral Response Matched to MFOD100, 200, 300
•
•
Hermetic Metal Package for Stability and Reliability
Compatible With AMP Mounting Bushing #227015
HIGH-POWER
IR-EMITTING DIODE
FOR
FIBER OPTICS SYSTEMS
MAXIMUM RATINGS
Rating
,f.leverse Voltage
Forward Current-Continuous
Symbol
Value
Unit
VR
3.0
100
250
2.5
-55 to +125
Volts
IF
1!0tal Device Dissipation @ T A == 2SoC
PDll)
Derate above 25°C
Operating and Storage Junction
TJ. Tstg
mA
mW
mW/oC
°c
Temperature Range
SEATING
PLANE
THERMAL CHARACTERISTICS
Symbol
Charactersitics
Thermal Resistance, Junction to Ambient
8JA
I
I
Max
400
Unit
°C/W
(1) Printed Circuit Board Mounting
FIGURE 1 - LAUNCHED POWER TEST CONFIGURATION
1 Meter Galite 1000 Optical Fiber
~=\==f=/===-IPl
]
D.U.T.
STYLE 1:
PIN I. ANODE
2. CATHODE
NOTES:
1. PIN 2 INTERNALLY CONNECTED
TO CASE.
2. LEADS WITHIN 0.13 mm 10.005)
RADIUS OF TRUE POSITION AT
SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
5.31 5.84
4.52 4.95
C
6.22 6.98
D
0.41 0.48
F
1.19 1.60
G
2.54 BSC
H
0.99 1.17
J
0.84 1.22
K
12.70
L
3.35 4.01
M
450 SSC
450 BSC
CASE 209-02
DIM
A
S
Connector
7-37
MFOE200
ELECTRICAL CHARACTERISTICS
ITA. 250 CI
Chlra.torl.tl.
Fig. ND.
IVR - 3.0 V. RL -1.0 Magohml
MIX
Unit
50
-
nA
3.0
-
-
Volt.
VF
-
1.5
1.7
VOlt.
-
CT
-
150
-
pF
1.2
Po
2.0
3.0
-
mW
3
PL
35
45
-
",W
-
ton. toft
-
250
-
ns
-
Reve.,e Breakdown Voltaga
OR
/lAI
Forward Voltage
IIF =.100 mAl
-loa
Total Capacitance
IVR =0 V. f ·'.0 MHzl
OPTICAL CHARACTERISTICS
Min
SvmbDI
-
Reverse Leakage Current
IR
-
VIBRIR
TVp
ITA = 2SoCI
Total Power Output INote 11
IIF = 100 mAo A ~ 940 nml
Power Launched INote 2)
OF = 100 mAl
Optical Turn-On and Turn-Off Time
1. Total Power Output, Po, is defined as the totel power radiated by the device into a solid angle of ,21f steradians.
2. Power Launched, PL. is the optical power exiting one meter of 0.045" diameter optical fiber bundle having NA
Attenuation = 0.6 dB/m @ 940 nm, terminated with AMP connectors. (See Figure 1.)
=0.67,
TYPICAL CHARACTERISTICS
FIGURE 2 - INSTANTANEOUS POWER OUTPUT
versus FORWARD CURRENT
3:
.s>"
~
FIGURE 3 - POWER OUT OF FIBER
ye.,us FIBER LENGTH
100
50
20
50
10
3:
5.0
'"w
~
1.0
0
'""
1.0
0
'"~
...
1il
z
~
u::
>-
"
'"~
--
............
)-----
............
10
-
5.0
~
0.2
DuPont PiFax PIR140
........
.....
2.0
0.1
1.0
TA=250C _
IF =100mA
Galite 1000
0
;;!;
0.'"
20
~
0.5
z>-
In
......
3
5.0
10
10
50
100
200
500
1.0
1000 2000
iF. INSTANTANEOUS FORWARO CURRENT (mAl
o
2.0
4.0
6.0
OuPont PI Fax S120
8.0
"
10
12
FIBER LENGTH 1m)
•
7-38
I
I
14
16
18
20
@ MOTOROLA
MFOLOI
THE LINK
A complete Fiber Optic one way transmission path component
assembly.
The link includes an infrared emitter, one meter of cable with
connectors, an integrated detector preamplifier and the compatible
ferrule semiconductor connectors.
Also included are basic design formulas, system design examples,
descriptive material on fiber optics, circuit ideas, several application
suggestions, and device data sheets.
•
17 MHz Linear Capability
•
NRZ Data to 20 Mb/s
•
Expandable System Lengths (cable loss dependant)
•
Rugged, Prepolished, Ferrule Semiconductors
•
No Optical Expertise Needed
•
RFI Shielded Detector
FIBER OPTICS
KIT
THE LINK ASSEMBLY
•
Infrared
Emitter
MFOE103FB
7-39
MFOL01
MFOE1 03FB IR EMITIER
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
3.0
Volts
Forward Current-Continuous
IF
100
mA
Operating Temperature Range
TA
-30 to +85
°C
ELECTRICAL CHARACTERISTICS ITA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
IR
-
50
-
nA
3.0
-
-
Volts
Volts
Reverse Leakage Current
IVR = 3.0 V. RL = 1.0 Megohm)
Reverse Breakdown Voltage
IIR = 100 ~A)
VI8R)R
Forward Voltage
IIF = 50 mAl
VF
-
1.2
1.5
Total Capacitance
CT
-
45
-
pF
Total Power Output From Optical Port IF = 50 mA
II. == 900 nm)
IF= 100mA
Po
40
70
140
-
~W
Numerical Aperture 01 Output Port 3.0 dB
1200 I'm [8 mil] diameter core)
NA
-
0.48
-
-
ton. toll
-
15
22
ns
Unit
IVR = 0 V. I = 1.0 MHz)
OPTICAL CHARACTERISTICS ITA = 25°C)
Optical Turn-On or Turn-Off Time
MFOD402FB INTEGRATED DETECTOR PREAMPLIFIER
MAXIMUM RATINGS ITA = 25°e unless otherwise noted)
Rating
Operating Voltage
Operating Temperature Range
Symbol
Value
Unit
VCC
20
Volts
TA
-30 to +85
°c
ELECTRICAL CHARACTERISTICS IVce = 15 V. TA = 25°C)
Symbol
Min
Value
Typ
Max
Power Supply Current
ICC
1.4
1.7
2.0
mA
Quiescent de Output Voltage
Vq
0.6
0.7
0.9
Volts
Resistive Load
ROMax
300
-
-
Ohms
Capacitive load
CoMax
-
-
20
Output Impedance
Zo
-
200
-
Characteristic
pF
Ohms
RM5 Noise Output
VNO
-
0.3
-
Noise Equivalent Power
NEP
-
57
-
Operating Voltage Range
VCC
5.0
-
15
Volts
Bandwidth 13.0 dB)
BW
-
17.5
-
MHz
mV
pW/JHZ
OPTICAL CHARACTERISTICS ITA = 25°C)
Responsivity IVee = 15 V. A = 900 nm. P = 10 AW*)
Pulse Response
Numerical Aperture of Input Core
1200 I'm [8 mil] diameter core)
R
0.6
1.5
-
mV/~W
tr.tl
-
20
-
ns
NA
-
0.48
-
-
·Power launched mto Optical Input Port. The designer must account for Interface coupling losses.
MFOA03 FIBER OPTIC CABLE ASSEMBLY
Type: DuPont 5-120
Number of Fibers: 1
Fiber Core Diameter. nominal: 200 ~m (8 mil)
Numerical Aperture, nominal: 0.4'
Attenuation: 100 dB/Km @ 900 nm
Cable Connectors: AMP Optimate metal connectors compatible with AMP 227240·1 Connectors.
7-40
®
MFOL02
MOTOROLA
LINK II
A Complete Fiber Optic Simplex TIL communication data link.
Link II features a transmitter and receiver module, 10 meters
of fiber cable, preterminated with appropriate matching AMP
connectors.
Link II includes complete component specifications, extensive
application literature discussing The Theory of Operation of
LINK II, and the "basic concepts" of fiber optics and fiber optic
communications.
•
Simplex TIL 200 kHz BW Data Link
TTL
FIBER OPTIC
DATA
LINK
• TTL Transmitter and Receiver Modules
• Preterminated 10 meters of Fiber Optic Cable (Expandable to 2 km)
• Link II Theory of Operation
• System Design Considerations, Data Sheets, Application Notes
The Motorola Fiber Optic Communi-
cation Link, LINK II, with complete TIL
compatibility.
The pulse bipolar encoded transmitter
(MFOL02T), at top, and the receiver/
decoder (MFOL02R), with lid off, operate from single 5.0 V power supplies .
. The LINK II (MFOL02) has a 200 kbaud
bandwidth and may be extended to
system lengths of over 1 km. The fiber
optic cable shown here is 10 meters in
length, as provided in the evaluation kit
for systems engineers.
Module dimensions are 2 inches
wide bV 2 inches deep by 0.45 inches
in height.
7-41
•
MFOL02
MFOL02T TRANSMITTER
ELECTRICAL CHARACTERISTICS ITA = 25°C)
Characteristic
Symbol
Min
-
Typ
Power Supply Voltage
VCC
Power Supply Current (Idle Mode)
ICC
-
80
Po
40
70
Total Power Output From Output Port *
II.
=900 nm. Idle Mode IF =50 mAl
5.0
Max
-
Unit
Volts
mA
I'W
Numercial Aperture of Output Port
NA
-
0.70
-
-
8andwidth
8W
D.C.
-
200
Kbit
Typ
Max
, Transmitter features MFOEl 02F
MFOL02R RECEIVER
ELECTRICAL CHARACTERISTICS
Characteristic
ITA = 25°C)
Symbol
Min
-
-
B.O
-
mA
-
0.01
-
I'W
VCC
-
Power Supply Current (Idle Mode)
ICC
S
Receiver Sensitivity"
Volts
Numerical Aperture of Input Port
NA
-
0.70
-
-
Bandwidth
BW
D.C.
-
200
Kbit
-
-
-
dB
Dynamic Range INRZ)
25
'Receiver features MFODl 02F
MFOA10 CABLE ASSEMBLY
•
Unit
5.0
Power Supply Voltage
10 meters of single fiber core preterminated cable .
LINK II can be expanded to several km by
utilization of other Motorola FOAC Devices
ie: MFOEl 06F/MFOD405F (820/nm systern)
7-42
FIBER OPTICS
Applications Information
8-1
•
AN·794
Application Not.
A 20-MBAUD FULL DUPLEX FIBER OPTIC DATA LINK
USING FIBER OPTIC ACTIVE COMPONENTS
Prepared By:
Vincent L. Mlrtlch
INTRODUCTION
the handling of delicate fiber pigtails, the need for
terminating and polishing such pigtails, and is
compatible with the AMP connector system.
This application note will follow the following
format:
I. Transmitter Description
A. Block diagram and functional description
B. Schematic diagram and design
considerations
C. Transmitter performance
II. Receiver Description
A. Functional block diagram and design
considerations
B. Amplitude detector coupling
and required SIN
C. Schematic diagram and circuit
implementation
D. Receiver performance
III. Building the Boards
A. Parts list and unique parts
B. Working with FOACs and AMP connectors
C. Shielding requirements
IV. Testing the Boards
A. Test equipment required
B. Looping transmitter to receiver. Caution
with LED
C. Waveform analysis
D. Setting hysteresis
V. System Performance
A. Interpreting fiber, emitter, and detector
specifications
B. Calculating system performance. Loss
budget, dispersion limit.
This application note describes an optical transceiver which is designed to be used in a full duplex
data communications link. Its electrical interface
with the outside world is TTL. The optical interface
between modules consists of separate transmit and
receive ports, which use the Motorola Fiber Optic
Active Component (FOAC) for the optical to
electrical transducers. Two modules can optically
communicate via either two separate fibers or via an
optical duplexer such as a three-port directional
coupler and a single fiber. The data rate can be
anything from 20 Mbaud on down as long as the
transmitter input rise times are compatible with TTL
specifications. For NRZ data where one baud per bit
is required, data can be transferred at rates up to 20
Mbits. For RZ data where 2 bauds per bit are
required, data can be transferred at rates up to 10
Mbits. The small-signal 3.0 dB bandwidth of the
system is 10 MHz minimum. The unit can also be
configured as an optical repeater by connecting the
receiver electrical output to the transmitter electrical
input.
The receiver is edge coupled and therefore places
no constraints on data format. Since the edge
coupling removes the data base line variation, there
is no base line tracking required. Consequently, there
is no limit on the length of a string of ones or zeroes.
The receiver latches and remembers the polarity of
the last received data edge. The use of the Motorola
FOAC for the transmitter and receiver transducers
greatly simplifies the optical interface. It eliminates
•
8-2
TRANSMITTER DESCRIPTION
FOAC
Fiber Optic Active Component
Transmitter Block Diagram and Functional
Description
Figure 1 shows the functional block diagram ofthe
optical transmitter. The first block is the logic
interface. Since the transmitter is intended for use
in data communications applications, it has to interface a common logic family and provide some standard load and input signal requirements. Also, since
it is intended for use at data rates of up to 20 Mbaud,
TTL is a good choice for the logic family. The logic
interface function then could be implemented by one
of the standard TTL gates, inverters, etc., to provide
an electrical port which can be driven from any TTL
output.
LED
Data
Logic
Input
Interface
FIGURE 2 - FOAC Construction
In addition to these functions, it would be nice ifthe
transmitter had the following features. It would be
convenient if the LED current were easily set to whatever value was desired. It would be desirable if the
LED current were not influenced greatly by power
supply fluctuations or temperature variations. Since
this transmitter is to be operating beside a receiver
operating on the same power supply, it would greatly
simplify transmitter/receiver isolation if the transmitter didn't cause large supply current variations
which modulated the power supply lines. Finally, it
would be useful if the transmitter could easily be
gated off by another logic signal so that the LED'did
not respond to the data input.
LEO and Optical Connector
FIGURE 1 - Optical Transmitter Functional Block Diagram
The second block in Figure 1, the LED Driver and
Current Gain, has several functions. First, it must
provide the forward current required by the LED for
the particular optical output power desired. Secondly,
it must switch that current on and off in response to
the input data with rise and fall times consistent with
the maximum baud rate expected. Third, it must
provide enough current gain to amplify the limited
source and sink current of the logic interface block up
to the needed LED current.
The third block, the LED and Optical Connector
could be broken into two separate functions, as is
usually the case. However, through the use of a well
thought out and economically advantageous
approach to the electrical to optical fiber translation,
the electrical to optical transducer and the fiber
coupling functions have been addressed in concert.
The electr%ptical transducer is an LED which
emits pulses of optical energy in response to the data
input. In this case, the optical energy is near infrared
which is invisible to the unaided eye. The LED package, a FOAC, efficiently couples as much emitted
energy as possible into a short internal pre-polished
pigtail fiber. The coupler or connector then mounts
the FOAC so that its optical port is aligned with the
core of the system fiber. In this way, the percentage of
emitted optical power that is launched into the system
fiber is maximized without any special preparation
of the transducer by the user. Refer to Figure 2.
Transmitter Schematic and Design
Considerations
Figure 3 shows the transmitter circuit schematic
and indicates which portion of the circuit performs
each of the previously mentioned functions.
The logic interface has been implemented using
the two sections of the SN74LS40 dual four input
NAND gate in cascade. The LS40 was chosen as the
particular part because of its buffered output. Since it
can sink 24 rnA instead of the normal 8.0 rnA (typical
LS output) and still provide 0.5 V for a low output, it
puts less of a current gain requirement on the following circuitry. The reason two sections were used in
cascade rather than one is that every TTL gate introduces some differential prop delay. This is a difference
in propagation times through the gate for positive
and negative transitions. It is primarily a function of
the gates' output transistor configuration and how
hard they are driven by internal circuitry. In some
instances, it can be very near zero, and in other parts
it can be as high as 10 ns. However, on a particular
chip, all sections will tend to have differential prop
delays of the same polarity and very nearly equal. If
two inverting functions on the same chip are then
cascaded, the differential prop delay through the
pair will tend to null to zero since both polarities of
incoming data edges are processed as positive
transitions by one gate and as negative transitions
by the other gate.
8-3
•
09/36
LED and
Optical
Connector
~-4~~~
09/36
__~~______~~~__~______~______~~____~~,*--
1=
0 dB
~
-1.0
g
~
~
1-
....
I'
--....
If...,....
~
~
r--
....
gOB'"
1i'i
/'
""'-
Po
-2.0
92
I"-
§
88
-3.0
TA (
250
45°
AMBIENT TEMPERATURE
65°
FIGURE 6 -- Optic·al Output Power and LED Current
versus Temperature
shows the corresponding LED current waveform
measured with a high frequency current probe. It will
be noted that the current waveform exhibits an
indiscernible amount of duty cycle distortion.
The biasing of the base of Q2 in both logic states
relative to the bias at the base of Q1 can be another
source of duty cycle distortion. If this is critical to the
application and must be held to less than a couple of
nanoseconds, these resistors may be selected to
tighter tolerances. Also, replacing the LS40 NAND
gate with an S40 (standard Schottky) NAND gate
will reduce distortion contributed by that source.
Figure 8 shows the absolute prop delay through the
transmitter. It will be noted that both positive and
negative transitions are delayed about 43 ns.
Figure 9 shows the 10%-90% rise and fall times of
the LED current waveform to be about 17 ns and
13 ns respectively.
8-5
•
(a) Transmitter TTL Input
FIGURE 8 - Transmitter Absolute Prop Delay
(b) LED Current
FIGURE 7 - Transmitter Duty Cycle Distortion
FIGURE 9 -
LED Current Rise and Fan Time
RECEIVER DESCRIPTION
Functional Block Diagram and Design
Considerations
Figure 10 shows the receiver functional block
diagram.
The first element is the optical detector which
receives pulses of optical energy emanating from the
end of a fiber. It typically looks like a current
source (see Figure 11) whose mdgnitude is dependent
on the incident optical energy and a parallel
capacitor whose value is dependent on device design
and the magnitude of reverse bias across it. This
capacity adds in parallel with any external load
capacity to form a net load capacity which must be
charged and discharged by the minute photo current
from the detector. Because this detector output is a
high impedance source and its signal is very small, it
is a difficult point to interface without introducing
noise, RFI, and reactive loads which degrade the
signal quality.
Logic
Interface
FIGURE 10 - Optical Receiver Functional Block Diagram
-----.. Data
Output
For this reason, the second element shown in the
block diagram, the current to voltage converter,
is usually coupled as closely as possible to the
optical detector and very often this interface is then
shielded from outside interference. This converter is
typically a transimpedance amplifier circuit built
from an op amp or other high gain amplifier with
negative current feedback. This circuit does three
things. First, it provides signal gain by producing an
output voltage proportional to the input current.
Second, by virtue of its high open loop gain and
negative feedback, it provides a low output
impedance. Third, it provides a virtual ground at its
signal input. That is to say, it has a very low input
impedance. Because of this, there is little or no
voltage swing at its input. Since the capacitive load
on the optical detector has to be charged by the photo
current, the relationship of
flt =
C flV
flt
(1)
C~
(2)
reason, the third element in the block diagram is a
linear voltage amplifier. This amplifier should
have sufficient gain to amplify the expected noise
from the current to voltage converter up to the
minimum level detectable by the amplitude detector.
The reason for this will be seen later.
With this consideration in mind, the minimum gain
ofthe voltage amplifier can then be defined as
= Amplitude Detector Threshold (Vpp)
Having more gain than this merely amplifies
signal and noise together beyond the minimum
amplitude detector threshold and accomplishes
nothing but a higher required detector threshold.
Thus, it would behoove the designer to have a voltage
gain block whose gain tracked detector threshold
from unit to unit or else a voltage gain and detector
threshold which did not vary significantly from unit
to unit. The latter is much easier to accomplish.
The next characteristic ofthe linear amplifier that
must be considered is its bandwidth or rise time. Rise
time will be considered here because data links are
usually characterized by a rise time budget rather
than a bandwidth budget. The system rise time is
defined as the rise time ofthe signal appearing at the
amplitude detector input which in this case is the
voltage amplifier's output. For reasons explained
later, a well designed system has its bandwidth
determined in the optical detector and preamp so the
voltage gain block's rise time should not degrade
system rise time by more than 10%. Rise time
contributions through the system add as the square
root of the sum of the squares. System rise time is
exhibited by the output waveform of the voltage
amplifier. It is usually determined by contributions
from the current to voltage converter and the voltage
amplifier such that:
I
holds true. This says that for a capacitor C, being
charged by a constant current I, the change in voltage
across it, fl V, will occur in time intervalflt. Thus, for
the model in Figure 11,
50 nA
if!
10 pF
C
1.0mV
flV
200 ns
then flt
Naturally, if the virtual ground input of the
current to voltage converter reduces fl V to very
nearly zero, the transition time, flt, also approaches
zero and much faster rise times can be recovered.
Also, by reducing the capacitance, C, one can
improve the rise time.
This capacitance is the parallel equivalent of the
optical detector capacitance, the amplifier input
capacitance, and parasitic capacitance of the printed
circuit board. An integrated detector/preamp (IDP)
reduces the component capacitances to a minimum
and completely eliminates the PCB capacitance,
thereby minimizing rise time and providing a low
impedance voltage source to which interfacing is
easily accomplished.
Now that the optical signal has been converted
into a voltage pulse coming from a low source impedance and having fast rising and falling edges, it can
be processed by more conventional means. For this
n~
50 nA
Typ
5 x 10-9
mhos
Typ
3.0pF
;;j'Typ
(4)
where tRSYS is the system rise time desired at the
voltage amplifier's output
tRIDP is the rise time of the integrated
detector preamp
tRA
is the required rise time of the voltage
v amplifier
This is only true if all other rise times in the system,
such as the LED driver, the LED, and the fiber dispersion, are fast enough so as not to contribute
significantly to the system rise time.
Now, if the voltage amplifier rise time should not
degrade the well designed system by more than 10%,
then using equation (4)
1 rf.JI
at
! (tamp)2 + (L)'
'"SAv
FIGURE 11 -
(3)
I to V Converter Noise Output (Vpp)
,,; 1.1 tRmp
(5)
Practical Photo Detector Model
8-7
There is also a lower limit on this voltage amplifier's
rise time which precludes it from having as fast a rise
time as is available. That is, as the noise from each
noise source in the receiver is added, its relative
contribution is a function of its bandwidth. For
example, if the IDP is characterized as having a noise
bandwidth Bl, an input noise of enl V1v'Hz,and a
gain of AVI and if the voltage amplifier similarly has
equivalent parameters ofB2, en2' and AV2 ' then the
noise presented to the amplitude detector in volts is
threshold as well as gain which doesn't vary more
than amplitude detector threshold from unit'to unit.
It should have a rise time fast enough so as not to
degrade system rise time by more than 10% but not so
fast a rise time that its noise bandwidth contributes
significantly to system noise.
The next component in the block diagram of Figure
10 is the differentiator. As was mentioned in the
Introduction, this edge coupled receiver strips off
the base line variations with duty cycle from the data
stream. This is the function ofthe differentiator and
there are a few considerations to be made in picking
the values ofR and C. Figure 12 compares the waveforms through an ac coupling network with those
through a differentiator. Figures 12(a) and 12(b) each
show a 20% duty cycle pulse train and an 80% duty
cycle pulse train as two possible extremes in data
format for a particular system. When passed through
the ac coupling network shown in Figure 12(c), the
resulting waveforms will have the levels shown in
12(e). Note the 3.0 V variation in "logic 1" levels and
the same variation in "logic 0" levels as the duty
cycle varies from 20% to 80%. In practice, an even
wider range in duty cycle is often encountered,
thereby making the lowest "logic 1" and the highest
"logic 0" even lel'is distinguishable from one another.
As a result, if a lEivel detector such as a comparator is
used to decide whether a "logic 1" or a "0" is present,
it must compare the data stream to a floating reference which tracks the reference level of the data
stream so that it is always centered between the
peaks. For best noise immunity, ·this reference would
have to be at the midpoint of the peak to peak
amplitude ofthe data. Und.er this condition, the noise
immunity would be equal to the amplitude of the data
pulses. If the data should lapse for a period of time,
From equation (6) it can be seen that if the voltage
amplifier's noise bandwidth, B2, is too large in
relation to the IDP's bandwidth, Bl, its noise
contribution can be significant or even dominant in
which case a much wider noise spectrum and higher
noise levels are available at the amplitude detector to
degrade SIN. The upper limit on the voltage ampli·
fier's bandwidth then is the point at which the noise
contribution of the voltage amplifier is about 50%.of
the IDP noise. This will enable the IDP noise to still
determine amplitude detector threshold.
)2
2en2
To sum up the characteristics of the voltage gain
block, it should have sufficient gain to amplify the
IDP noise up to minimum amplitude detector
20% Duty Cycle
80% Duty Cycle
I 20% Duty Cycle
80% Duty Cycle
~JUlifLTJL,JLJL
I
(a)
(b)
I
Input Waveform
Input Waveform
3000 pF
Data
>it---r1
Ideal
+4.0 V
•
ll
Reference
5V
--J=¥':1.
-1.0 V
--
62pF
I
>ci~vo
I
10RL
100n
lOOn
I
00
I
00
AC Coupling Network
Edge Coupling Network
+1 0 V I
.L
}~VC
.
1~0.5V~OVdC
.oJ-/.
-- -4.0 V
Vo
--
--
--
I
Ideal
Reference
.
Base Line
Constant with
Duty Cycle
-1.5 V
(e)
(f)
Capacitively-Coupled Data
Edge-Coupled Data
FIGURE 12 - Comparison of Data Stream Waveforms Through AC-Coupled and Edge-Coupled Systems
8-8
There is an implication here that may not be
obvious. That is, to provide the required input to the
amplitude detector, two requirements must be
satisfied. The differentiator input signal must have
adequate amplitude and it must have an adequately
fast rise time. Looking back at equation 7, it will be
noted that it is dV c which determines Va and
this floating reference would decay to its appropriate
limit for minimum or maximum duty cycle. Once
transmission resumed, depending on the initial duty
cycle, the first few bits of data could be missed until
the reference returned to its proper level.
A much more versatile system which is tolerant of
any duty cycle from continuous "logic l's" to continuous "logic a's" is the edge coupled system. As can
be seen from Figures 12(b), (d), and (f), only the edges
of the data pulses are passed by the coupling
network. These pass at reduced amplitude and then
the recovery or discharge of the network occurs
before the next data edge comes along. Since the Va
out of the network in Figure 12(d) is the drive signal
for the amplitude detector, it should be maximized.
Since Va is the product of the load resistor and the
capacitor current, 10 should be maximized.
Therefore,
at
therefore there is a myriad of combinations of
amplitude and rise time which will provide adequate
results. However, if the transition height ofthe input
waveform is so small that its peak value is below
detector threshold, or if the rise time is so slow that
the RLC time constant decays significantly before
the transition is complete, then the pulse will go
undetected. An example of this occurs if the fiber link
is disrupted during the transmission of an LED
'''ON'' condition ("logic I"). That disruption
generates so slow a transition that it will not couple
through the differentiator and the receiver will
indicate that the LED is still on until the link is
restored and a fast LED "OFF" transition is
received.
There is another subtlety implied here and that is
that all coupling capacitor time constants ahead of
the differentiator must be long enough so as not to
decay, during a long string of ones or zeroes, so fast
as to generate an edge that is differentiable. A coupling time constant of one or two orders of magnitude
longer than the differentiator time constant is
suitable.
From a practical point of view the output impedance
level of the differentiator should be kept low so that
measurements with scope probes can be made without
destroying the waveshape of the differentiator output
signal. It was found that an R value of 500 n or less
was needed to keep a conventional lOX, 7.0 pF probe
from severely loading differentiators having time
constants in the 5 to 20 ns range.
With the data stream now differentiated, the next
block in Figure 10, the amplitude detector can be
considered. Refer to Figure 14. Since each differentiated edge returns to the reference voltage level from
(7)
where Vc is the voltage across the differentiator
capacitors. Hence, the RLC time constant should be
maximized to provide maximum amplitude detector
drive. If the input waveform to the edge coupling
network appears as Figure 13(a), Vo will appear as
that shown in l3(b).
However, in maximizing the RLC time constant, it
cannot be increased without limit. As can be seen
from Figure 13(b), within the minimum bit time, the
differentiator must be allowed to recover fully.
Allowing 4 time constants (4 RLC) after the system
rise time tRSYS has occured will permit sufficient
recovery. Hence the minimum bit time, T, is given by
T
= tRSYS + 4
RLC max
andRLC max =
T -tRSYS
4
(8)
(a)
Transmitter Input Data
Thresholdl
Hysteresis
- - - - - -VREF de
~
- - - - ihreshold 2
j -
1 -
(b)
Amplitude Detector Input Data and Noise
n r - ILJn L-....J~--...J . LJ
L ___
VOH
VOL
(c)
Receiver Output Data
From
Differentiator
VREF
~1
_
TTL
+
de
R2
R3
(d)
Amplitude Detector Implementation
FIGURE 14 - Edge Detector Operation
FIGURE 13 - Differentiator Waveforms
8-9
I
either polarity of pulse, what is required is an
amplitude detector with two thresholds, one above
the reference voltage and one below; in essence a
Schmitt Trigger function which has hysteresis and
whose threshold is dependent on the output state.
Looking at the next block of Figure 10 and noting
that it must generate a logic interface, in this case a
TTL interface, it can be seen that both blocks can be
accomplished by using a comparator or line receiver
with positive feedback as the amplitude detector.
Figure 14 describes the operation and implementation of this amplitude detector with hysteresis. As
can be seen, when a positive edge crosses threshold 1,
the output switches low and the feedback to the
non-inverting input causes threshold 2 to now apply.
Since the positive edge decays back to VREF,
threshold 2 is not crossed and the output is latched
low. The next edge to come along must be negative
and when it occurs it crosses threshold 2 causing the
output to switch high. Similarly, it latches in this
state and reinstates threshold 1.
In order for the hysteresis to be symmetrical about
VREF, it must be centered between the limits ofthe
TTL output swing. That is,
V REF
BER
1.0
®
®\
r-...
'\
1 x 10-4
1\
\
\
1 x 10-6
1 x 10-8
1\
1 X 10-9
o®
r:
""
1\
6.0
9.0
12
15
18
21
24
27
30
Theoretical Cure - ae-coupled, Single-Ended, No Hysteresis.
Calculated Performance tor differential, edge-coupled detector with no
offsets.
[!] Calculated Performance for differential. edge-coupled detector with
offsets.
@ Measured Data - Increased Hysteresis to accommodate detector
offsets and transmitter crosstalk.
FIGURE 15 - BER versus SIN Performance
(9)
assumption is either that during the absence of data
it is acceptable for noise crossing threshold to cause
output transitions or else that data is never absent.
The third is that there is no hysteresis around the
threshold. The expected waveforms are shown in
Figure 16( a).
This SIN versus BER curve and the waveforms of
Figure 16(a) apply to both ac-coupled as well as
dc-coupled systems as long as the above assumptions prevail. However, because of the difficulty of
controlling the amplified thermal drifts in a
dc-coupled system, ac coupling is usually used in an
optical data transmission system. Therefore
dc-coupled systems will not be considered here.
Referring to Figure 16(a), as long as the waveform
is above threshold the data bit is labeled a "logic 1"
and ifthe waveform is below threshold, the data bit is
labeled a "logic 0." As long as data is always present,
that is idle channel condition is marked with a flag, a
squarewave or some other recognizable pattern, the
only time an error will occur is when a noise pulse is
large enough to reach threshold. Looking at Figure
16(a) it can be seen that when the noise peak equals
or exceeds the threshold voltage, a bit error is made.
The amplitude to which noise peaks will rise only
once in 1 x 10-9 attempts is 6.15 times the rms noise
amplitude. Therefore ... the required peak signal
amplitude for a 1 x 1O-l1 BER is 6.15 times the rms
noise. If the signal is any smaller than that, a noise
pulse riding on the data which is large enough to
cross threshold and cause a bit error will occur more
often and the BER will be less than 1 x 10- 9.
Expressing this in more conventional terms then, the
required SIN ratio for a 1 x 10-9 BER is:
Referring to Figure 14(d), the hysteresis is determined by:
(10)
•
\
1 x 10-2
R1 is made equal to R2 so as not to introduce voltage
offsets due to the input current of the amplitude
detector. In practice, R1 and R2 should be made fairly
low values so that the actual input voltages do not
have a step between the two states due to the voltage
drop of these resistors and the amplitude detector
input current. Because they are low values, 100-500 n
is typical, R1 also becomes the load of the
differentiator.
As can be seen from Figure 14(b), the hysteresis
must be made greater than the peak-to-peak noise
riding on the data stream. The amplitude detector
used in this 20-Mbaud system is similar to this but is
driven differentially. To afford a better understanding of why this type of amplitude detector was
chosen, a discussion of different amplitude detector
implementations and their relative merits follow.
Amplitude Detector Coupling and
Required SIN
Just how much larger than the noise the hysteresis
must be depends on the probability of error one is
willing to accept. That probability, or Bit Error Rate
performance, directly' relates to the required signalto-noise ratio. These two parameters ofBER and SIN
have been related by Curve A shown in Figure 15.
This curve is derived by evaluating the error function
for a normal distribution which defines the ,probability of a noise pulse being some factor, N, times the
rms noise level for various values ofN. However, this
curve is only applicable to amplitude detector
performance if certain assumptions are made. The
first is that the amplitude detector threshold or
decision level is always midway between the two
extremes of the data stream level. The second
SIN
= 20 log
SIN
=
e
(~)
6.15 ennn•
= 20 log ( - - - -
15.8 dB
This can be seen to lie on Curve A in Figure 15. This
SIN is not a true power ratio but merely 20 times the
log of a ratio of a peak voltage to an rms voltage.
8-10
SIN
(dBI
1 ___
Bit Error
Amplitude
Detector
Input
-
Threshold Voltage
Bit Error
Data
Output
(a)
Single-Ended ae-Coupled Data and Noise with Fixed Threshold at 50% Level
Amplitude
Detector
Input
Threshold
Data
Output
(b)
Differential
Amplitude
Detector
Input e
speak
Data
Output
ac~Coupled
Data and Noise
No
,:
IJ
B~it~:_--M-i-'SSing Transition Here
LJ
Error
(e)
Single-Ended ae-Coupled Data and Noise with Threshold Hystersis (H) around 50% Level
Amplitude
Detector
Input
Data
Output
Missing Transition Here~
(d)
Single-Ended Edge-Coupled Data and Noise with Threshold Hysteresis (H)
Amplitude Threshold (VT)
Detector
Data
Input
Stream
H
/
Data
Output
~
Vn - VT2
Missing Transition Here
J1!
I
'Bit
Error
(e)
Differential Edge-Coupled Data and Noise
FIGURE 16
8-11
•
However, by convention these units are calIed dBs of
signal·to·noise.
If the data in Figure 16(a) dri ves the detector differ·
entialIy, then the waveforms of Figure 16(b) apply.
Here, rather than comparing data to a fixed noise free
threshold centered between the voltage extremes of
the data stream, the data is compared to a threshold
voltage which is different for a logic one bit than it is
for a logic zero bit. This threshold is the data stream
inverted. That is, it is data plus noise which is equal
in amolitude to the data stream data plus noise, but
opposite in phase. Since both the data stream and the
threshold are capacitively coupled, their base lines
float to maintain an average value of zero. Thus,
referring to Figure 16(b), the data stream and thres·
hold levels are separated from each other by a voltage
difference which is a function of the incoming duty
cycle (D.C.). The amplitude of noise this system can
tolerate without making bit errors is, therefore, a
function of duty cycle. This means the peak signal to
rms noise required by this system to insure a 1 x 10.9
BER is also a function of duty cycle.
Looking at Figure 16(b) it can be seen that the
data stream is in a logic one state for a small per·
centage of the time and in a logic zero state the rest
of the time. This represents a low duty cycle pulse
train. As the duty cycle is increased so that the data
stream remains in a logic one state for a longer
percentage of the time, the entire data stream waveform wilI float downward, so that the logic zero volt·
age level will move farther from and the logic one
voltage level will move closer to the quiescent bias
level VQ. As this happens the threshold waveform
on the other hand will remain in the logic zero state
for the same increased percentage of time and the
waveform will move upward a corresponding
amount. Thus, the two waveforms will be close to
one another and noise immunity will be relatively
low for large duty cycles as well as for low duty cycles
and their separation from each other and the noise
immunity will be maximized when the duty cycle
is 50%.
Thus, the promimity of the threshold and data
stream waveforms depends on the limit of incoming
duty cycle furthest from 50%. If this limit is less than
50%, the value of D.C. to be used in equation (11) is
equal to the decimal equivalent of the duty cycle
itself. If the limit of duty cycle is greater than 50%,
then the value of D.C. is the decimal equivalent of
100% minus the duty cycle.
That is
(e'P) • (D.C.) = 6.15(en"",,)
6.15 (eDrm,)
2(.2)
or
SIN = 23.7 dB
For a 30% to SO% variation in duty cycle, the limit is
SO% and the value of D.C. is 1.00 -O.S = 0.2.
Hence,
6.15 (en,m,)
2(.2)
and
SIN = 20 log [ eSpeak I
ennna
SIN = 23.7 dB
for the general case and a 1 x 10·9 BER requirement,
SIN = 20 log
[~l
2(D.C.)
SIN = 15.S dB
= 20 log [ (6.15)(.5) I
+ 20 log (
(D.C.)
~.~.
)
(12)
where D.C. is always';;; 0.5.
The added benefit of differential drive is the common
mode rejection of extraneous signals being radiated
or conducted into the amplitude detector inputs.
The idle channel pattern is not always a continua·
tion of constant amplitude transitions. In some cases
it is a continuous logic state and in such cases idle
channel noise can be rejected by hystersis in the
amplitude detector. Such is the case in Figure 16(c).
In this case the data stream is compared to a thres·
hold which is different for a logic one output than it
is for a logic zero output. This threshold is not gener·
ated by inverting the data stream. It is generated by
feeding back a portion of the output data signal to the
non·inverting input of the amplitude detector. Since
the threshold is not a linear function ofthe input data
stream, there is no noise riding on it. The difference
in threshold voltage for the two states is calIed the
hysteresis. The hysteresis must be wide enough to
reject all noise spikes of amplitudes which occur more
often than once in 109 when no data is present. That
is to maintain a BER of 1 x 10-9,
6.15 (en....,)
D.C.
eSpe k
SIN = 20 log [ _ _a_ I
(11)
H '" 2 enpeak or 2 (6.15 e nno,)
•
6.15 (enno,)
Once this condition is satisfied a detection will
occur every time the peak signal plus noise exceeds
one·halfthe hysteresis. However, if this is all that is
required, there will be much greater edge ambiguity
or jitter in this system than in the previous ones because of the increased proximity between the noise
and the amplitude detector threshold. Therefore, in
order for this edge jitter to be no worse than before,
the peak signal must exceed the threshold by the
same amount as it did before or,
2(D.C.)
for a square wave or 50% duty cycle,
eSpeak = 6.15 (enno,)
or
SIN = 15.S dB
For a 20% to 70% variation in duty cycle, the limit is
20% and the value of D.C. is 0.2.
8-12
1/2
H +
enpeak
SIN
= 2.2 dB
+ 20 log ( e'peak)
This relatively high signal to noise requirement is
8.2 dB higher than the originally proposed approach
of Figure 16(a) but this loss of sensitivity buys the
freedom from idle channel noise and simplicity of no
base line variation with duty cycle.
Finally, the edge coupled system differentially
driven will be examined. Refer to Figure 16(e). Once
again as in the case described in Figure 16(b), the
threshold for this differentially driven edge coupled
case is generated by inverting the incoming data
stream plus noise. However, unique to this case, is
the fact that there is hysteresis in the threshold as
well. This hysteresis limits the levels to which the
threshold can decay after the inverted data edges
couple through the differentia tor network. This
hysteresis, H, is the difference between the two
threshold levels, VT1 and VT2. These levels can be
seen clearly in Figure 16(e) only ifthe data edges are
separated in time long enough to allow the RC differentiators to discharge completely. The noise on
these threshold levels can also be noticed. Assuming
the data base line is centered between VT1 and VT2,
the hysteresis must be
In other words, imposing the condition of idle
channel noise rejection has caused a degradation in
system sensitivity for the same BER performance.
The signal.to-noise ratio req uired for this idle channel
noise rejection is,
20 log (
SIN = 21.8 dB
This system is 6.0 dB less sensitive than those pre·
viously discussed. Its benefit is freedom from data
format constraints such as the maximum length of a
string of ones or zeroes or having to present an
appropriate idle channel pattern for noise rejection.
The effect of edge coupling or differentiation
rather than ac coupling can be examined by refer·
ring to Figure 16(d). The first thing to be noticed is
that the data is compared to the same type of threshold as in the previous case; that is a two state
threshold generated by feedback from the amplitude
detector output to non-inverting input. The
difference between these two thresholds is the
hysteresis H. Referring to Figure 16(d), it will be
noticed that after the edge or transition is coupled
through to the detector, the differentiation network
immediately begins to discharge according to its
time constant. This forces the amplitude detector
input to return to its base line level midway between
the two threshold levels during every bit cell. Because
ofthis, the hysteresis H must once again be greater
than the peak to peak noise level for the required
probability of error regardless of the idle channel
condition. Otherwise noise would toggle the detector
during almost every bit interval after the network
discharge was complete. Since this system should
have no more jitter than the others, the signal should
exceed threshold by the same amount as before or
enpeak. Thus the required signal level at the
amplitude detector input is
to insure that noise doesn't toggle the output. As can
be seen from the inset below, a noise pulse riding on
the data stream will cause the same ambiguity in
zero crossing (i.e. .1t) wWether the threshold is fixed
or is inverted data plus noise.
Inverted Data
Threshold a n d - ¥ : " " " "
Noise Pulse
Fixed Threshold - Data Stream and
Noise Pulse
2
+
..../
,- -
--
I I ',- __
--1..J.t ~
In order to keep edge jitter the same in this system as
it was in previous systems then, the peak signal must
exceed threshold by the same amount or enpeak
Therefore referring to Figure 16(e) the peak signal
required is
H
eSpeak
log 02.3)
SIN = 24.0 dB
12.3e nrms
SIN = 20 log
= 2.2 dB+20
e nrms
6.15e nrms + 6.15 e nrms
enpeak
12.3 e nnn,
Since this is after the differentiation, the effect of the
differentiator on the signal to noise ratio must be
taken into account in order to compare sensitivities
at the same point in the circuit. It has been experimentally determined that the loss of the differentiator
is B.2 dB for the rms noise. When measuring the differentiators loss to the signal, it must be remembered
that the differentiators peak output transition is the
response to the peak to peak input transition. The
amplitudes of those two transitions have been compared and it has been determined that the input was
10.4 dB larger than the output. Therefore, the SIN
has been degraded by 10.4 dB less 8.2 dB or 2.2 dB.
Therefore, the required SIN ratio into the differenti·
ator for a BER of 1 x 10-9 is
eSpeak
= V TS +
enpeak
where VTS is the threshold at the time of switching.
However, the threshold doesn't remain at VT1 but
starts moving in opposite phase with the data edge
with the same rise time as the data edge. Because
of this, the data edge and threshold edge will cross
each other and thereby cause an output transition
when they have traversed equal voltage increments.
Since the data stream baseline is assumed to be
centered between VT1 and VT2, this crossover will
occur halfway between VT1 and the baseline and so
the actual threshold voltage level will be VT1 or
112 H less 114 (H). That is
8-13
•
v.Hl
(V2H -
therefore
= V.H
specifications which vary from unit to unit. This
means that in all of the amplitude detectors
described, a certain amount of additional signal will
be required to insure that threshold is always crossed
regardless of the offset for a particular unit. For the
device used here, the MC75107, a potential difference
of 25 m V or greater between inputs must exist to
guarantee states. This directly affects the required
hysteresis. The two amplitude detector inputs which
are separated by H/2 volts must now be separated by
2 enl1eak + 25 mV rather than by 2 enpeak in the
prevlOUS comparison. Similarly, the peak signal
must now exceed the reference level, VT, by 2 enpeak
+25mV.
That is:
e""ak
VT + (2 enpeak + 25 mV)
e.,.eak
eSpeak
2e
and for a BER
=
1x
"peak
10- 9
e
SIN = 20 log ( .,..ak) = 20 log
en,.,..
2 ( 6.15 ennn, )
en.....
and
SIN = 21.8 dB
Once again this is out of the differentiator and to
translate it to the differentiator input an additional
degradation in SIN of 2.2 dB must be taken into
account. Therefore for the differentially driven edge
coupled detector the SIN ratio required for a 1 x 10-9
BERis
SIN = 21.8 dB + 2.2 dB
SIN = 24.0 dB
V2H - e'peak
Therefore
2enpeak + 25 mV
e.,...k
for a BER of 1 x 10-9
e.,...k
=
12.3ennno + 25 m V
The value of enrms was experimentally determined
to be 2.4 mV rms. Since 25 mV is 10.4 times the
2.4 m V rms measured at the detector input,
e.,...k
Table I below summarizes the pros and cons of these
amplitude detector approaches.
It can be seen looking at Table I that the differentially driven edge coupled detector accommodates the
most variation in data format and idle channel signalling. In addition it provides common mode rejection of extraneous signals thereby providing better
performance under full'duplex conditions. For these
reasons it was chosen as the detector for this receiver
which needed such flexibility. The price for this
versatility is about 8.2 dB in SIN sensitivity. Certainly this is not insignificant and if the data format
and idle channel signalling in a particular application permitted, the system designer would do well to
consider the ac coupled approaches.
One practical factor not considered here is that the
amplitude detector device itself will have input offset
12.3 ennn, + 10.4 en..,.o
20 log ( e.,..ak ) = 27.1 dB
en..,..
Taking into account the 2.2 dB degradation in SIN
due to the differentiator, the required SIN is
SIN
=
27.1 dB + 2.2 dB
SIN = 29.3 dB
to accommodate all MC75107 detector chips. This
point is also plotted on Figure 15.
The remaining function in the block diagram of
TABLE I
DETECTOR
APPROACH
Single Ended ae
Coupled. No hysteresis
Differential ae Coupled
SIN
SENSITIVITY
FOR
1X10" BER
15.8 dB
.
15.8 dB
0.5
+ 20 log ( D.C. )
•
ADVANTAGES
DISADVANTAGES
Maximum sensitivity_
Requires continuous idle channel pattern and duty
cycle limits to reject noise as well as a reference
voltage that tracks data base line. No common
mode rejection.
No base line tracking required. Common mode
rejection.
Requires continuous idle channel pattern and duty
cycle limits to reject noise. Sacrifice in sensHivity
dependent on duty cycle limits.
SacrHices 6 dB in sensitivHy. Requires threshold
which tracks data stream base line. No common
mode rejection.
Single Ended ae
Coupled with hysteresis
21.8 dB
Doesn't require continuous idle pattern and duty
cycle limits for noise rejection .
Single Ended Edge
Coupled with hysteresis
24.0 dB
Doesn't require idle channel pattern or duty cycle Sacrifices 8.2 dB in sensltivHy. No common mode
rejection.
limits to reject noise. Doesn't require tracking
reference voHage.
Differential Edge Coupled
wHh hysteresis
24.0 dB
Doesn't require idle channel pattern or duty cycle SacrHices 8.2 dB in sensitiVity.
limits. Doesn't require tracking reference voltage.
Offers common mode rejection.
'See text for definition of D.C.
8-14
Figure 10 is the logic interface. Its purpose is to
generate a standard logic level and provide sufficient
drive capability for simple interfacing. The TTL logic
level in this receiver is actually generated by the
amplitude detector. However, in order to buffer the
amplitude detector's output, another line receiver
section is used for isolation and the interface to the
TTL world. In addition, an emitter follower provides
the needed drive for a 750 coaxial line to the external
test equipment.
fore, in this circuit, the real load was kept above
500 0 and the capacitive load was minimized by
careful printed circuit layout. The output rise time
ofthe MFOD402F is specified as typically 20 ns and
that is about what appears at the output ofthe linear
amplifier where the signal is sufficiently large in
amplitude to measure. The supply voltage of +15 V
was chosen so that operation on the flat portion of
the IDP's ~tR curve was guaranteed. Below 10 V,
Receiver Schematic Diagram and Circuit
Implementation
Figure 17 shows the receiver schematic and indio
cates which portions perform each of the functions
outlined in the functional block diagram description.
The first active component in the receiver sche·
matic is the MFOD402F integrated detector preamp
(IDP). It performs both the optical detector and
current to voltage converter functions described
earlier. It also affords all the isolation advantages
of the integrated structure that were outlined in a
previous section. Its transfer function is typically
1.0 m V of output amplitude per p. W of optical input
power. Output impedance is specified as 2000 typical
and although its maximum real and reactive loads
are also specified, it was found that these loads
caused excessive ringing of the IDP output. There·
the IDP's rise time begins to degrade rapidly.
The shield over the optical connector and IDP is
required for isolation from the receivers own TTL
output and the crosstalk of the transmitter. Its
contribution to performance may only be measurable
in terms of improved bit error rate.
The noise out of the IDP is specified as 300 p. V rms
typical, and is a good number to usein calculating the
amplitude detector hystersis required.
Linear Amplifier
The MC1733 was chosen as the linear amplifier
primarily because of its wide gain bandwidth and its
reasonably low noise. It was used at a gain of 100
because that provides sufficient gain to amplify the
IDP noise up to minimum amplitude detector thres·
hold, as will be seen later, and it also allows the
simple strapping of Pins 3 and 12 together using a
~Vcc
r--------------------------------------------------------<+15 V
09/38
51
01
r--~i
--1
I
I
I
I
I
I
2.2k
4
1
TIL
Out
I
U2: MFOD402F
U3: MC1733C
U4: MC75107
01.05.06: MPS6515
"""'_--<+5.0 V
25
~------_+---+4~--_+-~__<-5.0V
I
L--+------~~'~L~_----l----~~--~~----~-+--~COT
Optical Detector
"and Current to
Voltage Converter
Linear
Amplifier
I
Differentiator
I
I
I
FIGURE 17 -
I
I
I
I
Amplitude
Detector
Initialize
Circuit and
Voltage Reference
Receiver Schematic
8-15
Logic Interface.
Buffer, and
Line Driver'
I
I
I
I
•
The differentiators consist of the 62 pF capacitors and the 100 n resistors for the amplitude
detector's input bias. Since the output of the MC1733
is taken differentially, there are two such networks
required. The impedance of these networks was made
low so as to minimize the voltage step at the detector
input pins caused by the drop across the 100 n
resistors. This step results from the change in base
current of the amplitude detector between the ON
and OFF states. Specified as a total worst case base
current change of 80 /lA, the 100 n differentiator will
cause an 8.0 m V step at Pin 2 of the amplitude detector and a subtracting of 8.0 m V from the hysteresis at
Pin 1 of the amplitude detector. Another reason to
keep the differentiator impedance low is to prevent
instrument loading. A lOX scope probe, for example,
will load a 1000 n differentia tor enough so as to make
time constant measurements meaningless and waveform analysis unreliable.
As mentioned earlier, in equation (8), the differenti-
foil runner beneath the chip itself. This proved
simpler than bringing Pins 4 and 11 out around the
chip and tying them together with an external gain
setting resistor. Pins 4 and 11 are the emitters of the
input differential amplifier and proved very susceptible to the injection of noise and positive feedback
from the TTL output.
Output Pins 7 and 8 provide the data stream
waveforms which are the vital signs of the system.
They provide information a bout the system signal to
noise ratio, the system rise and fall time, and an
indication of received signal level. See Figure 18.
With the MC1733 strapped for a differential gain of
100, each output will deliver a single ended signal 50
times larger than the IDP output.
With this gain strapping on the MC1733, the rise
time out of this amplifier is typically 10 ns when
driven from a fast pulse generator. The input bias
resistors were chosen to be as low as the IDP could
drive so as to enhance gain stability of the MCl733.
(a)
IDJ
System SIN at Pin 8 of MC1733 for a BER of <1 x 10- 9
System Rise and Fall Time at Pin 8 of MC1733
•
(c)
(d)
Typical Waveforms at Amplitude Detector Inputs
Pins 1 and 2 of MC75107
Amplitude Detector Output
FIGURE 18 - Receiver Waveforms
8-16
ator time constant is controlled by the minimum bit
time and the system· rise time. From equation (8)
3.6 - 1.85 = 0.7 mA
2.5 k
Thus, the total change in reference curren.t between
logic states is lAmA. WithRO=8.90, the step in VREF
= 12.5 m V. This step is almost completely a common
mode signal which is about 0.6% of VREF and thus
insignificant. The voltage divider formed by the 2.4 k
hystersis resistor and the 100 0 bias resi~tor do~s
introduce a differential signal of 1125 OfthlS step m
reference voltage. Therefore, the differential signal at
the amplitude detector input resulting from. this
12.5 mV step in VREF is only 0.5 mY. Refer to FIgure
18 for typical waveforms at the amplitude detector
input and output.
.
The sensitivity specification on the MC75107 IS
±25 m V over temperature and unit to unit variations.
It will be noted from Figure 18(c) that the hysteresis
must be large enough so as to keep the voltage
difference between the data base line and the
threshold always greater than 25 mV, including the
noise peaks, except during transitions. When the
absolute difference between these two inputs to the
MC75107 falls below 25 mV, the output state is not
defined and thus errors can be made. Consequently,
the hystersis was empirically set to 130 mV to insure
this 25 m V separation between inputs at all points on
the waveform. Only when this is accomplished does
the BER approach 1 x 10-9 or less as was discussed in
the section on amplitude detectors.
The initializing circuit, Q5, which does not
appear on the simplified block diagram of Figure 10,
merely injects a pulse of approximately 2501's in
duration into the amplitude detector during power up
to insure that the output always turns on to the low
state in the absense of optical transitions. By pulling
down on the positive input of the amplitude detector a
logic high at Pin 4 of the MC75107 is inhibited. A~ter
the discharge ofCI6, the leakage current and depletlOn
capacity of the Q5 collector base junction are inconsequential to the performance of the circuit.
The logic interface. buffer. and line driver
have been implemented using the other section of the
MC75107 and Q6. The MC75107 section regenerates
the TTL level already at Pin 4 but isolates the positive
feedback from the external loading conditions. Q6
provides the additional drive required to the ~5 0
cable used in the test set up. At 20 Mbaud, the shIelding of this lead is essential. Since the error detector
used provided a 75 n coaxial interface, RG-59 cable
was selected.
Receiver Performance
Figure 18, once again, shows the typical waveforms
one should expect at key points in the receiver, as
well as system rise time and the SIN ratio required
for good BER performance.
Figure 15, Curve B, shows the typical BER versus
SIN at the differentiator input. Curve B represents
performance that can be expected when amplitude
detector input offsets and transmitter crosstalk are
accounted for. Figure 19 relates SIN to optical input
power for this 20 Mbaud receiver. This curve was
generated by measuring SIN and then calculating
backwards from the measured signal level out of the
MC1733 amplifier through the receiver gain of
where T is the minimum bit time and tRSYS is the
system rise time. Assuming for now that the system
rise time, that which is measured at the MC1733 out·
put is 30 ns worst case, the maximum RC time constant consistent with a 20 Mbaud bit cell is
50ns-30ns
4
5.0 ns
The values used are 62 pF and 100 n giving a time
constant of6.2 ns. This hedging by 1.2 ns means that
the required transition height from the MC1733 wi~1
have to be slightly higher to be detected for tranSItions spaced 50 ns apart than they will be if spaced
by 55 ns or greater.
The MC75107 line receiver is the amplitude
detector and Q1 and Q5 perform ·the voltage
reference and initialize functions, respectively. The
amplitude detector is basically a high speed
comparator with positive feedback to perform a
Schmitt Trigger function. Its output swing is 0.1 to
3.6 Vde limited by the active pullup. With that output
swing the hystersis is 130 mY. With this output
swing, the optimum reference voltage is using
equation (9)
3.6 V + 0.1 V
2
VREF
+ 1.85 V
As was mentioned previously, the 100 n input bias
resistors were that low to minimize the voltage step
at the amplitude detector inputs when the output
changed state. Similarly, to reduce the step in
reference voltage when the output switches, the
current in the reference transistor, Q I, has been set to
4.0 mA and its base to ground impedance (rb) has
been lowered to about 360 n. This makes the voltage
reference output impedance approximately
rb
Ro = r, + - - or
HFE
Ro =
26 n - rnA
4.0 rnA
+
360 n
150
8.9 n
To evaluate the step change in reference voltage
when the data output changes states, the amount of
current that the voltage reference, Q1, must source
and sink must first be found.
lSOURCE
1.85 - 0.1 = 0 7 A
2.5 k
. m
50mV/I'W.
where RH is the sum of the feedback resistor and bias
resistor for the amplitude detector. From Figure 21,
RH = R11 + RIO = 2.4 k + 1000 = 2.5 k. Similiarly,
The dynamic range of the receiver is precisely
defined as the ratio of the amplitude of the maximum
usable signal detected to the amplitude of the
8-17
•
minimum usable signal detected. There the precision
ends, however, because what is usable in one application is not in another. The minimum usable signal
can be picked off of the curve in Figure 19 for whatever SIN is required to achieve the desired BER. The
maximum usable signal is where distortion gets to
be prohibitive. Duty cycle distortion versus output
level of the MC1733 is plotted in Figure 20.
Dynamic
Range
,
0
_I;IF
~I;-
0
0
BUILDING THE BOARDS
i;Ii
0
~
J,.o'
Pin
1.0
10
100
FIGURE 19 - Signal-to-Noise versus Optical Input Power
PULSE STRETCHING
OF POSITIVE BIT (ns)
+8.0
+6.0
IIIIIII
Input; 20 Mbaud NRZ
1/0 Pattern
+4.0
+2.0
V
,.,
11
-2.0
-4.0
-6.0
-8.0
'0 (Vpp )
0.1
1.0
10
MCl733 OUTPUT VOLTAGE (PIN 8)
FIGURE 20 - Raceiver Overload Characteristic
•
70,...W
4.01LW
Dynamic
12.4 dB
Range
Temperature testing indicated that over the O°C to
70°C temperature range, no significant degradations
in performance occurred. Nominal drifts in detector
offsets did not cause any significant changes in
sensitivity.
SIN (dB)
0
10 log
This curve was measured by simulating high level
optical inputs with a pulse generator in place of the
IDP and having equivalent output impedance and
transition times. The distortion occurs in the MC1733
output before the IDP overloads and thus this is a
valid test. The dynamic range can be deduced then by
dividing the optical input power needed to cause an
intolerable level of distortion, say 5.0 ns, by the
optical input power needed to provide the required
BER, say 1 x 10-9, and taking 10 log of the ratio. To
find the optical input power that causes overload,
refer to Figure 20 and divide the output voltage in m V
by 50 mV/p.W. To find the optical input power
required for a 1 x 10-9 BER, refer to Figure 15, Curve
B, and then use that SIN ratio to find optical power
required from Figure 19. For this example then, the
dynamic range would be
8-18
In building the boards, the last components to be
inserted should be the optical transducers and mounting bushings. This will reduce their handling and
thus the probability of scratching or contaminating
the optical ports with particles commonly found in
a work bench environment.
To begin building the boards, refer to the parts list
and complete schematic (Figure 21), the component
overlay (Figure 22) and the photograph of the completed board (Figure 27). It is recommended that the
IC sockets mentioned in the part list be used at least
on the first pair of boards to allow looking at system
performance versus tolerances in device parameters
and to allow for the misfortune of damaging an IC
during construction. The decoupling chokes should
be available from Ferroxcube. When installing them,
care should be taken so as to position them so that the
turns protruding from the ends of the ferrite are not
shorted together. When ordering electrolytic
capacitors to fit the board layout, the approximate
dimensions on the parts list should be used as a
guide. Where there is ground foil on the component
side of the board, care must be used when inserting
all components so that no leads are shorted to
ground.
It will be noted in the schematic of Figure 21 and in
the parts list, that a shield can is specified for shielding the receiver optical transducer. This is to prevent the sensitive receiver input from picking up
energy radiating from the receivers TTL output as
well as from the transmitter circuitry. The can part
number listed must be notched out to fit over the AMP
mounting bushing and then sweat soldered down to
the ground foil pattern on the component side of the
board. Refer to Figure 24 for details of shield preparation. Without the shield, there will probably be more
ringing in the waveform at the detector input and the
bit error rate will be significantly degraded. To accommodate this shield, capacitor C4 may have to be
installed on the solder side of the board depending on
the vintage of the actual board used. Before any
components are installed, it is recommended that the
holes for the BNC connectors first be enlarged to a
0.375 inch diameter and the holes for the +5.0 V,
-5.0 V, and ground wires be enlarged to about a 0.070
inch diameter in order to accommodate #18 AWG
stranded wire.
After all other components are mounted to the
PCB, and before the receiver shield is put on, the
FOAC's and their bushings must.be assembled.
It will be noted that the FOAC, shown in Figure
23(a), has a flat spot on the circumference of the
ferrule and this flat spot affords it a stable position
on the PC board. Therefore, when assembling the
FOAC and bushing, refer to Figure 23(b), the FOAC
is first inserted into the connector so that the flat
spot is facing down toward the PC board. Large
coupling losses will be encountered if the FOAC is
not seated properly in the bushing. To eliminate the
uncertainty of whether or not these parts are seated
properly, the distance between the back ofthe FOAC
and plane "A" ofthe bushing, shown in Figure 23(b),
can be measured. It should be no greater than 0.130
inches. The plastic retention plate puts sufficient
tension on the FOAC's so as to maintain proper
seating.
Once the FOAC is properly seated, its leads can be
formed to fit the foot print on the PC board. The
RECEIVER SECTION
15V
r--------------------------------------------------------<+15V
L1
C31
R2
lC3
L_~i
--,
I
I
14
10
Out
C16
t-......--<+5.0
R16
...
~------~rt------~------
~-~--total)
LR, the reflective loss, is due to the loss oflight incurred by the reflection off of the surface of the fiber
core at both the emitter and detector interfaces. These
losses amount to about 0.5 dB for each interface.
However, where the IDP is used as the photo detector
component, its transfer function in mV per I'W
already includes the reflective loss at its optical port,
so that a receiver sensitivity calculation includes
this loss. Therefore, with that type of detector the
reflective loss need only be accounted for at the
emitter interface. With other detectors, namely the
PIN photo diode, photo transistor, or photo darlington, reflective loss has to be accounted for at both
ends of the system. For this system using the IDP
then,
LR = 0.5 dB
LNA is the loss incurred when light emitted from
an LED or fiber subtends a larger solid angle then the
acceptance cone ofthe mating fiber or detector. If the
LED source has a numerical aperture (NA) larger
than the N A of the system fiber, then the loss will
occur at the LED end of the system. If on the other
hand the system fiber has an NA larger than the
LED and photo detector, then all of the light emitted
by the LED will be accepted by the system fiber
but the NA loss will occur at the fiber/detector
interface.
A complicating facet of NA loss is that fiber NA
decreases as fiber length increases and each fiber
has a different characteristic. Some fiber manufacturers plot it as a function of length and others
specify it only at a kilometer. Some fibers have a slow
variation of N A over path length and others apparently vary exponentially. The path length must be
known so that the fiber NA can be defined by the
fiber manufacturer. Once the NA is defined, the NA
loss can be calculated from:
)
POtotal
LCM = 0.2 dB
LD, or diameter loss, is proportional to the relative
cross sectional areas of the system fiber core and the
FOAC core. If the system fiber is of a smaller core
diameter than the FOAC, the diameter loss will be
incurred at the emitter/fiber interface. If the system
fiber is of a larger core diameter than the FOAC, the
diameter loss will be incurred at the fiber/detector
interface. The loss across this type of diameter step is
given by:
Lo
LNA =
di~meter).
smaller dIameter
= 10 log ( larger
o
=
10 I
og
( 200 ILm )2
200 ILm
Lo = 0.0 dB
LA, or alignment loss, is incurred at each interconnect whether that is between two fibers, a fiber
and a FOAC, or two FOAC's. It is due to finite tolerances in the mechanical dimensions of the mounting
bushing, the ferrule, and the FOAC. These tolerances
allow some axial and angular misalignment as well
as some longitudinal tip to tip separation between
the fiber and the FOAC. Measurements indicate that
this loss component is typically 2 dB at the emitter/
fiber interface and 1 dB at the detector/fiber interface. The reason it is less at the receive end is that the
cone of light exiting the fiber subtends a smaller solid
angle than the cone of light exiting the LED FOAC.
Therefore, the fiber/detector interface is more
tolerant of longitudinal tip to tip separation. Thus,
the values of alignment loss are:
L
= (O!
Q
in ..
~
It was shown earlier that presence of high order modes
in the FOAC LED give it an effective NA higher than
a long length of the same type of fiber, Figure 9. As
shown in Figure 12, the difference in the two areas of
the spatial patterns represents lost power due to different
NAs. The magnitude of this loss is given by:
VO
or
(b)
10
FOAC LED
90'
NA Loss = 20 log (NA1INA2)
(4)
Note that in the case of coupling from a small NA fiber
to a larger NA fiber, no energy is lost due to NA difference so that the loss in equation 4 becomes zero. (Example: coupling from a system fiber into a FOAC
detector)
Diameter Loss
If two fibers of different diameters are coupled, an additional loss may be incurred. It is given by:
Diameter Loss = 20 log lDia1lDia2)
FIGURE 11 -
(5)
NA Measurement
Again, if the receiving fiber has a diameter greater
than the source fiber, Figure 12, the diameter loss reduces to zero.
la) For FOAC LED
Ib) For FOAC Detector
Ie) For Fiber
8-33
•
FIGURE 14(c)
5.0
Gap Loss
Ideally, two fibers would be joined such that no gap
exists between them. In practice a small gap is intentionally introduced to prevent mechanical damage to the
fiber surfaces. The Motorola FOAC devices and AMP
connector bushings are designed to hold this gap to about
0.1 mm. The result of variations in the gap for several
sample NAs is given in Figure 13.
•• v
~;S-I '0.70-
4.0
J 1/
//
3.0
1.0
o~V
0.1
/
/
~d
0.1
d=omm
--- -0.01
.......-: ~
~~
-::::..-
..s-
o
-
0,02
0.03
~
~V
..... ;;.'
V
1 '-I- -t: ~ ~
o
0.2
/
/
.u ./--f -I
2.0
1.0
0.04
NAISourcel
0.05
0,06
0,07
0.32
0.08
0,09
0.10
[, Misalignment (mm)
FIGURE 14 -
Misalignment Loss
Fresnel Loss
0,5
0.4
0.3
d. Gap Imml
Gap Loss
As light passes through any interface, some energy is
transmitted and some reflected. The amount of energy
lost is a function of the indices of refraction of the materials forming the interface. For the FOAC family of
devices and glass core fibers this loss is a fairly consistent
0.2 dB per interface.
Axial Misalignment Loss
Angular Loss
If two connected fibers are not concentric there will be
an obvious loss of power. The effect of this misalignment
for several NAs is shown in Figures 14(a), 14(b), and
14(c). The effect of gap separation is also included in
these graphs.
If the surfaces of the two connected fiber ends are not
parallel, an additional loss is incurred. The magnitude
of this is shown in Figure 15.
-
5,0
I--
0.25
i-- ,.....-
0.2
~
~
3.0
2.0
-
--
l--
-
0.15
.!!1.0
V
k-""
0.03
~ -A
~
./" £ '-'
•
,./
.-
4.0
j:
0,05
0.06
0.07
2,0
-- -
1.0
0
0.15
I-"'"
,0.1
d=~
~
~
0.09
0.10
;;; 1.5
::s!
FIGURE 14(bl
....- -- -
~
V
0.5
1.0
~ -:P
0
~
V
l'
V'/
0.,
2'
3'
Angular Displacement
,./
~
~
~
NA ISourcel = 0.5
W
~
~
~
I, Misalignment Imml
FIGURE 15 -
8-34
:,/
V
.......
V
0.5
I-'"" .........: i j '
V
~
0.08
~
........::: ~
--- ....--- "./
--
0.2
.~
2.5
IT
2.0
r-
0.25
3.0
_d
~!- t::;:
NA ISou...1 = 0.7
I, Misalignment (mm)
5.0
Once the various losses in a system have been identified and quantified, it is a relatively simple exercise to
calculate the total system loss and thus predict system
performance. To illustrate this, and to highlight a major
10BB element in systems, two examples will be considered.
In each case an MFOE102F LED is used for the source
and an MFOD102F PIN diode as the detector. System
A uses a 50 meter length of cable, while system Buses
two 50 meter lengths joined by a fiberlfiber splice.
~
-"""
........ V......... '/'"
'"
0,04
FLUX BUDGET
FIGURE 14(a)
V
/'
~
0.01 0.02
,.,.-
----
!---
o
o
•
.§
-'
FIGURE 13 -
1 1 0,15
~ 3.0
F=
NA :' 0.32
~
0,20
;'
-....-
W
O,SO
/
/ / V
// /'
/. ' /
/'
2.0
~
-
0.25
4,0
Angular Loss
NA = 0.15
4'
::;::::;:;
5'
System A Flux Budget
Connector
FIGURE 16 -
+20
Nt Attenuation
& Fresnel Loss
1\ r~lj~
i2 1 11 931
1
1
(""0,.
~20
ro
~
':rNt
P3 1-2~ 171-
J~
1
I
I
I
)t----fl
FIGURE 17 -
The total system loss can now be calculated:
FiberiDetector I - & Fresnel
I-loss
+
~30
50 Meter FlO System
I-218711
L-...Ji"
~t
Power Level Along System A
Using the detector responsivity, the output signal current can now be determined:
LED to Fiber Connector Loss, Figure 141a) 2.7 dB
LED to Fiber Fresnel Loss
0.2 dB
LED to Fiber NA Loss
6.79 dB
{20 log INAILEDlI NA(FIBERlj}
1.25 dB
Fiber Attenuation 150 Meters)
Fiber to Detector Connector Loss,
1.5 dB
Figure 14( c)
0.2 dB
Fiber Exit Fresnel Loss
0.2 dB
Detector Entry Fresnel Loss
10 = P(in)(detector) x R
10 = 6.5",W x O.4",AI",W
10 = 2.60 ",A
(1)
(12)
(13)
Since the detector dark current, rd, of the MFOD102F
is 2.0 nA at 25'C, the signal-to-noise ratio is:
SNR = 10 log (2.6010.002)
SNR = 31.1 dB
12.84 dB
(14)
(15)
System B Flux Budget
(Note that no NA loss was included at the detector end
since the detector NA is greater than the fiber NA. Also,
no LED exit Fresnel loss was considered since it is already accounted for in the Po specification for the LED),
To determine total system performance we can construct a table. For this analysis we will use power units
in dBm similar to the volume units (vu) used in audio
work. We will define a power unit of zero dBm for an
optical power of one milliwatt. For any power level we
then have:
dBm = 10 log (P/1 mW)
dBm = 10 log P(mW)
1
lED/Fiber& Fresnel loss
+10
FOAC
Detector
MFOD102F
Total System A Loss
(8)
(9)
(10)
However, partitioning the power level at any point in
the system, as in Table II, enables us to plot the power
level over the system as shown in Figure 17.
BU~hin,g[ _10
50 Meter Cable
6.5
System Loss = 10 log IP(in)/P(outll
12.84 = 10 log 1125 tJ.W/P(out)]
P(out) = 6.50 tJ.W
F~L...J
'--'
_ ,....----------~I::t
rI
FOAC
LED
MFOE102F
125
Of course, this could have just as easily been calculated
from the total system loss of 12.6 dB:
Connector
Bushing
P(~W)
~9.03
~11.93
P2: Power in Fiber
(P1 - Connector loss - Fresnel loss)
~20.17
P3: Power from Fiber
(P2 - NA loss - Attenuation - exit Fresnel)
P4: Power into Detector
~21.87
(P3 - Connector loss - entry Fresnel)
The following specifications apply:
MFOEI02F: Po = 125 tJ.W (il 100 rnA
NA 00 dB effective) = 0.7
Core diameter = 200 tJ.M
Wavelength = 900 nM
MFODI02F: R = 0.4 tJ.A!tJ.W (II 900 nM
NA 00 dB effective) = 0.7
Core diameter = 200 tJ.M
l(dark) = 2.0 nA al 25'C
Fiber:
Length = 50 M
Attenuation = 25 dB/Km al 900 nM,
Figure 10
NA «150 M·= 0.32
Core diameter = 200 tJ.M
Connectors: Gap = 0.15 mm typical
Misalignment = 0.05 mm typical
I
TABLE II
Power Units (dBm)
Point in the System
P1: LED (----*----<:> TTL Output
RECEIVER
8-45
•
FIBER OPTIC CIRCUIT IDEAS
1.0 MEGABIT SYSTEM
Microcomputer and microprocessor data links may be constructed using fiber optics. These
data links offer all the advantages of fiber optics (transient/surge current immunity, high
voltage isolation, no ground loops, RFI/EMI isolation, etc.) The links have been demonstrated
in point of sale terminals, microprocessor controlled industrial controls, petro chemical
applications, RS232 and many other areas. Full duplex links with system lengths greater than
1 Km have been constructed.
The transmitter and receiver circuits are depicted below with recommended parts list:
TRANSMITTER
I
0.2 V
5.0 V
+'5p.F
Rl
0.001
10k
Data
Input
Parts List:
U1
SN74L$Q4
Q1
MPS3638A
01
MFOE103F
AMP Mounting Bushing #227240-1
• D.C. voltages shown are for TTL interface
with the top voltage for the LED on @ 50 rnA
and the bottom voltage for the LE 0 off.
TRANSMITTER:
This fiber optic transmitter handles NRZ data rates to 10 Mbits or square wave frequencies to 5
MHz, and is TTL compatible.
Powered from +5V supply for TTL operation, the transmitter requires only 150 mA total
current.
•
The LED drive current may be adjusted by resistor R1, and should be set for the proper LED
power output level needed for system operation. (see LED data sheets.)
Resistor (R 1) value may be calculated as follows:
R1 +V CC -3.0 V
ohms
IF
Where:
V cc = Power Supply Voltage
I F = Desired LED forward current
8-46
FIBER OPTIC CIRCUIT IDEAS
1.0 MEGABIT SYSTEM -
Cont.
The LED is turned off when transistor 01 is driven on. Diodes 02 and 03 are used to assure the
turn-off.
Diode 04 prevents reverse bias breakdown (base-emitter) oftransistor 01 when the integrated
circuit U1 output is high. The transmitter requires a power supply voltage of +5 ±0.25V.
RECEIVERS
The receiver uses an MF00104F PIN photodiode as an optical detector. The detector diode
responds linearly to the optical input over several decades of dynamic range.
The PIN detector output current is converted to voltage by integrated circuit U1 (Operational
amplifier LF357). The minimum photocurrent required to drive U1 is 250 nA.
Receiver dynamic range is extended with diode 02 to prevent U1 from saturating at large
optical power inputs.
Integrated circuit U2 acts as a voltage comparator. Its worst case sensitivity of 50 mV
determines the size of the pulse required out of U1. U2 detects, inverts, and provides standard
TTL logic level to the output ..
Offset adjustment R1 should be set to accurately reproduce a 1 MHz.50% duty cycle square
wave at the receiver output.
Voltage measure made without
+15 V
incoming oPtical signal.
2.2 k
+5 V
+0.64
lN4001
O"I'F
J
330
lOa k
lN4001
2.2 k
0.1
Jl
-1SV..£7
Data
Out
Ul
+.365 V
47
5.1 k
1:-P--<
+5V
+15 V
2 pF
Parts List:
Dl MFDDI04F
Ul LF357
U2 MC75107
MC7510B
lN914
02
or
O.II'F
~2501'F
-=
+15Vln
1 - < + 5 In
5 0 l'F
Power
Supply
50l'F
AMP Mounting Bushing 227240-'
h
L
Power
Supply
-15 V In
Power
Supply >-----'.
Ground'
.
.l.
-15 V
J
.--
250 JlF
- " -5 V In
-5 V
Power Supply; (15 V) HP61'6A or equivalent
(5 V) HP6218A or equivalent
8-47
•
FIBER OPTIC CIRCUIT IDEAS
100 KILOBIT RECEIVER
This is a two-IC four-channel receiver. An operational amplifier, Ul (MC3403) translates the
PIN detector Photo current into a voltage level. The Ul output voltage is used by open collector
comparator U2 (MC3302) to generate TTL or CMOS compatible signal levels at the receiver
output. One channel is shown below.
VCC = 5 -15 Vdc
02
01
lN914
1 k
R2
270 k
270 k
10 k
Data
Output
10 k
Parts List
Ul MC3403 (1/4)
U2 MC3302 (1/4)
01 MF00102F
02 1N914
AMP Mounting Bushing 227240-1
Power Supply: HP6218A or equivalent
•
8-48
FIBER OPTIC CIRCUIT IDEAS
1/10/100 KILOBIT RECEIVER
This is a single IC two-channel receiver, using an MC3405, which contains two op-amps and
two comparators. The receiver is TTL of CMOS compatible and operates upto 100 Kilo-bit data
rate.
L;9ht\.
Input \
'4\
1N914
~
270 k
1 k
MFOD102F
, OOKilo-Bit
Or
(MFOD202F
10 Kilo-Bit)
Or
(MFOD302F
3 pF
A
---,
,.-------
1 Kilo-Bitl
I
I
I
I
I
I
I
I
I
540 k
8
Vee
I
Ul
Data
Output
I
I
I
I
L __
Parts List:
3 k
540 k
5 k
Vee
Ul Me3405
AMP Mounting Bushing 227240-1
Power Supply: Hp6218A or equivalent
•
8-49
FIBER OPTIC CIRCUIT IDEAS
DARLINGTON RECEIVER
Discrete Low Speed Circuits
A simple photodarlington receiver may be used in a dc control or low frequency system.
The output of the MFOD302F drives a signal (MPS6515) transistor common emitter amplifier.
This circuit operates from a +5 to +15 volt power supply, and its output is TIL and CMOS
compatible.
By the addition of a second transistor, the circuit described below may be extended in
frequency from one Kilo-bit to two Kilo-bit.
VCC
5-15VDC
1N914
1 k
NC
MPS6516
-=
~----'
2.5 M
750
-=
-=
-=
PHOTOTRANSISTOR RECEIVER
The phototransistor receiver circuit shown below may be used for data rates up to 20 kilo-bit.
The receiver sensitivity at 10 kilo-bits is 4.7 /lW.
VCC
•
-=
8-50
5 VDC
A MICROCOMPUTER DATA LINK
USING FIBER OPTICS
Prepared by:
Scott Evans and
Jim Herman
•
8-51
System Hardware Requirements
The performance capability of fiber optics now offers the
designer a practical, advantageous alternative to wire for data
communications. The advantages ofoptical fibers over twisted
pair or coax wire are easily enumerated:
The basic system in this example is illustrated in Figure 1. It
uses a cost-effective transmitter and receiver design in a fullduplex, two-terminal arrangement using a pair of fibers for
interconnect purposes. The basic system is easily expandable
to multiple terminals, however, in a looping configuration
shown in Figure 2. Here, the central control, or primary
terminal, initiates data flow. The data then passes serially
through the secondary terminals and returns back to the
primary. Note that this loop arrangement results in any one
terminal operating In a half-duplex, one-direction mode. Each
secondary serves as a repeater network; that is, the received
optical data is fed to the terminal and also retransmitted to the
next terminal in the loop. As the data passes around the loop,
any secondary recognizing its address in the address field of
the Information Frame reads that frame and acts on it. The
data continues to pass down the loop whether a terminal has
acted on it or not. Secondary stations are given an opportunity
to transmit local data when the central terminal transmits a
"POLL" command. If a secondary desires loop control, it is
granted by the primary by a "GO AHEAD" flag following a
"POLL" command. Error detection and recovery are also
governed by a full set of rules.
The Motorola EXORterm 220 M6800 development system
serves as the basis for the system hardware. The EXORterm
220 is an intelligent CRT display terminal featuring an integral
development facility that provides a motherboard and card
cage capable of holding up to eight microprocessor modules.
Each station is composed of standard M6800 microprocessor
modules including an M6800 MPU Module, an MEX6816-22
16K Static RAM Module, an MEX68RR 8K ROM Module, and
an MEX6850 ACIA Module interfaced to the CRTterminal. An
MEX6854 Advanced Data Link Controller (ADLC) Module with
fiber optic transmitter and receiver on-board provides the
interface to the fiber optic link. This is shown in Figure 3.
The MC6854 ADLC performs the complex interface function
between the MPU data bus and a synchronous communications channel employing a Bit-Oriented-Protocol. It is an
NMOS LSI intelligent peripheral device that automatically
performs many of the functions required by the communications protocol, thus reducing the amount of software required
and increasing the data throughput rate.
1. Bandwidth. Standard optical fiber cable on the market
today has bandwith up to several hundred MHz, and a few
available cables are good up to several GHz.
2. EMllmmunity. Optical fibers neither radiate nor pick up
electromagnetic interference. Thus, crosstalk and RFIinduced errors are eliminated. Optical fibers can be
installed alongside high-voltage or high-current-carrying
cables or in close proximity to EMI or RFl-intensive
systems with no fear of interference. Recently proposed
FCC regulations restricting the magnitude of EMI
generation in data communication systems create no
concern for users of fiber optics.
3. Security. Optical fibers are difficult to tap. Either the fibers
must be broken to insert a tap or the cladding stripped to
allow another fiber to contact the core and draw off some
of the signal. Both methods are difficult to implement and
easily detectable, so that optical-fiber-transmitted data is
relatively secure.
4. Size and Weight. A one-kilometer reel of optical fiber
cable of equal, and often greater data handling ability,
weighs about one-tenth that of comparable coax cable.
The optical fiber is considerably smaller, also, allowing
significantly more signal-handling capability In the same
cross-sectional area of a conduit or c8ble trough.
5. Cost. The price of optical fiber cable continuas to drop
while that of wire is seen to be facing a future of increasing
cost. Even with optical fiber costing more than wire, the
overall system cost with fiber optics is often lower.
This article describes a data communication system designed to demonstrate the ability to interconnect a series of
microcomputer terminals with a fiber optic link.
•
: ~l~L
\
Thru
I
I
II
~~----- " ~
Secondary
Station
Fiber
Secondary
Station
Fiber
FIGURE 3 - Micromodule complement of an EXORterm
220, used as an intelligent CRT display terminal
FIGURE 2 - Loop Configuration
8-52
.1 +15""
3.0 V
1.7V
Da1a
Inpu1
U1 =MC74lS04
FIGURE 4A-System Transmitter
+
t25~F
II
l
@
.5V
O.01 P.F
2.2k
O.01I-'F
'2k
'---~~--~
110k
270k
510
__ TIl
0""""
510
MP$6515
2k
1k
FIGURE 4B-System Receiver
FIGURE 5 -- Clock Recovery and Loop Through Circuit
8-53
•
Fiber Optic
Transmitter and
Receiver
•
protocol provides an efficient method for establishing and
terminating the conversation between terminals, identifying
senders and receivers, acknowledging received information,
and error recovery.
A transmit sequence from the primary station to a secondary
station starts with the transmission of the Information Frame
(I-Frame) containing the address of the intended secondary
station in the address field. When a secondary receives an
I-Frame with its address, it reads that frame and stores it in a
receive buffer. In SDLC, all frames contain a 16-bit error
checking code which precedes the closing flag. The receiving
station checks this error code to validate transmission accuracy and responds with the appropriate acknowledge or notacknowledge frame when it sees a "GO AHEAD" flag. A
secondary is permitted to suspend the repeater function and
go "on loop" and transmit a frame only when it receives the
"GO AHEAD" flag from the primary station.
In the two-terminal demonstration system, the M6800 MPU
data throughput capability at 1-MHz operation limited the
maximum data rate to about 75-kbitlsecond. By using an
MC6844 Direct Memory Access Controller to reduce the
amount of processor overhead in data handling, and by
incorporating a receiver designed for higher bandwidth, data
rates up to 1 Mbaud have been demonstrated. Since the
optical fiber posseses such high bandwidth capability, the
existing cable easily handles increased data rates or system
upgrading. This demonstrates one of the big cost advantages
of fiber optic communications.
The transmitter and receiver modules are built around the
Motorola Fiber Optic Active Component (FOAC) products.'
The transmitter uses an MFOE1 03F light emitting diode
(LED). The receiver component is an MFOD104F PIN diode.
The FOAC family and a compatible connector are joint
developments of Motorola and AMP Inc. The concept (Figure
1) allows the user to efficiently interface to any of the many
types and sizes of optical fibers on the market.
As shown in Figure 4, the transmitter and receiver are
mounted directly to the ADLC Module. The drivercircuitforthe
transmitter uses an MC74LS04 inverter and one discrete
driver transistor. This circuit is capable of driving the LED at
a 1-Mbitlsecond data rate.
Although the optical fiber is impervious to EM I, the actual
receiver circuit is not. It is shielded, therefore, to prevent noise
pickup. At 100 kHz, the receiver is capable of reception with a
bit-error-rate of 10".
The receiver sensitivity, transmitter power, and system
losses (e.g., fiber attenuation) determine the maximum usable
distance between terminals. This system was operated with a
pair of 70-meter Siecor 155 cables, but was designed to
operate up to 120 meters. System length and data rate might
be increased with higher receiver sensitivity or increased
transmitter power.
Transmitter and receiver are interfaced to the ADLC as
shown in the clock recovery and loop-through circuit of Figure
5. The clock recovery circuit synchronizes a 1-MHz oscillator
(divided down to the 62.5-kHz data rate) to the incoming data
from the receiver. Both the data and the separated clock
information are presented to the ADLC. The data rate clock is
then also used to route data back to the transmitter so it can be
sentlo the next downstream station. In the event that power is
lost to any terminal on the loop (power failure or maintenance
operation), there is a provision for a separate power supply or
battery pack to operate the receiver and transmitter circuits .
The loop-through control then routes the receiver output
directly to the transmitter input line so that repeater performance is maintained during terminal power-down.
Conclusion
A practical, cost-effective alternative solution to a specific
applications problem has been discussed. As higher power
LED's and more sensitive detectors and directional fiber
couplers or splitters are introduced, even more flexibility will be
in the hands of the system designer.
1. The FOAC line of components is described in Application Note
AN-804, "Applications of Ferruled Components to Fiber OptiC
Systems." The Note is available from your Motorola sales repre·
sentative or distributor.
2. AMP Bulletin HB5444, "Fundamentals of Fiber Optics."
3. IBM SDLC Document No. GA27·3093·1
4. Motorola Application Note AN-794, "A 20·Mbaud Full Duplex
Fiber Optic Data Link Using Fiber Optic Active Components."
Available late August from your Motorola sales representative or
distributor.
System Software
Connecting a series of terminals together requires a welldefined and efficient communications protocol to manage the
data link. Forthis system, a Bit-Oriented-Protocol- known as
Synchronous Data Link Control (SDLC)' - was used. This
8-54
•
OPTOELECTRONICS
General Information
•
Selector Guide and Cross-Reference
•
Data Sheets
•
Applications Information
FIBER OPTICS
•
Generallnformation
•
Selector Guide
•
Data Sheets
•
Applications Information
®.
MOTOROLA Semiconductor Products Inc.
BOX 20912. PHOENIX, ARIZONA 85036. A SUBSIDIARY OF MOTOROLA INC .
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