1982_Litronix_Optoelectronics_Catalog 1982 Litronix Optoelectronics Catalog
User Manual: 1982_Litronix_Optoelectronics_Catalog
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OPTOELECTRONICS CATALOG
Litronix A Siemens Company
Litronix A Siemens Company
OPTOELECTRONICS
CATALOG
1982
Litronix, Inc., 19000 Homestead Road, Cupertino, California 95014 • Telephone (408) 257-7910/ TWX 910-338-0022
Headquartered in Cupertino, California, Litronix designs, manufactures and markets
optoelectronic components and related products worldwide.
4
PRODUCTION PROFILE
LED PRODUCTION
LED (light emitting diode) production,
at the Cupertino facility, begins with
ultra pure gallium and arsenic contained
within a quartz boat (ampoule).
Polished wafers are put through EPI
(epitaxial) reactors for vapor-phase
epitaxial growth. The thin EPllayer
is doped with phosphine to form a GaAsP
.(gallium arsenide phosphide) layer.
Ampoules are processed through
a furnace.
Next, the material passes through the
photo masking and diffusion ar€)a.
Patterns are etched through a mas,kiFlg
silicon-nitride layer. Then a thin layer
of zinc is diffused into the material
through the mask patterns and front and
backside metals are evaporated on
the wafer for electrical contact.
The resulting GaAs (gallium arsenide)
ingot is sawed into wafers.
Finished wafers areshippedto one
of Litronix' offshore production plants
for scribing and breaking into individual
LED chips (sometimes known as die)
for assembly into finished products.
Wafers are lapped and polished to .a
mirror finish.
5
INTEGRATED
CIRCUIT PRODUCTION
Diffusion: (thermally adding dopant).
CMOS, NMOS and PMOS LSI (large
scale integration) circuits and bi-polar
circuits are designed for awide variety
of applications.
Masking for circuit patterns, typically
8 masks per wafer.
Aligning, developing and etching
to reproduce the circuit pattern in the
oxide mask.
Litronix produces silicon integrated
circuits at a wafer fabrication facility
located in Sunnyvale, California.
Implanting with dopant atoms in ION
implanter (alternate process to thermal
diffusion).
Oxidation of silicon wafers in a
furnace.
6
MANUFACTURING
Polysilicon deposition (for silicon
gate processing).
Aluminum deposition to form
electrical inter-connect patterns.
Finished wafers are tested on Litronix .
designedatid built micro processor
controlled automatic testers.
. Litronix Penang, Malaysia plant.
A typical LSI timekeeping circuit.
7
8
TABLE OF CONTENTS
Alphanumeric Index . ................................................ , 11-14
LED Displays
Selector Guide ......................................................
Numeric Displays ....................................................
Alphanumeric Displays ...............................................
Bar Graphs ..........................................................
15-18
19-54
55-62
63
LED Intelligent DisplaysTM
Selector Guide ...................................................... 65
Four Character Modules ............................................. , 67-86
Intelligent Display AssemblyTM ......................................... 87
LED Lamps
Selector Guide ...................................................... 91-96
Standard Single LED Lamps .......................................... 97-182
Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 173-178
Integrated Circuit Lamps ............................................ 183-200
Accessories ........................................................ 201
Q~I
.....
wE
..J
"'~I
e.g
~
0
.!!-
Optocouplers (Opto-Isolators)
c,"
Selector Guide ..................................................... 203
Single Channel Optocouplers .................................... , ... 205-248
Dual and Quad Channel OptocoupJers ......................... 209,217,255,258
High Reliability Optocouplers ........................................ 225-232
High Speed Optocouplers ........................................... 249-254
Hermetic Optocouplers .............................................. 247
Reflection Emitter/Sensor ........................................... 261
"'0
0",
u-
0'
09
.. .::~
~"'I
CD
~
':w
Infrared Emitters
Selector Guide .....................................................
Single Infrared Emitters .............................................
Arrays .............................................................
Hermetic Infrared Emitters ...........................................
~
CD
263
265-294
293
265-276
II
II
I
'"
Photodiodes
Selector Guide .....................................................
TO-18 Pla:,tic Lens. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Hermetic .... , ..................................... , ............ , ...
Differential .........................................................
Plastic Package ........... , ... , ... , .................................
Four Quadrant ......................................................
295
297
299-310
311
313-338
339
Phototransistors
II.
oo!!
>-
!(5u
OCD
Selector Guide .....................................................
Single Phototransistors ..............................................
Arrays .............................................................
. Hermetic Phototransistors ., ................................ ' ........
341
342-362
359
351-358
f
o
::U)
c::
.. CD
u-
.- 0
Photovoltaic Cells
Selector Guide ..................................................... 363
Cells .............................................................. 365-378
Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 379-418
Reliability Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 419-420
Representative and Distributor List .................................. 421-422
9
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c:(
r
ALPHANUMERIC INDEX
Part
Part
Number
De$cription
004-9002
004-9003
Clip, T1+4, Black
Clip, T1%, Clear.
.......... 201
. .......... 201
004-9004
004-9005
Clip. RL-2, Black
Clip. RL-2. Clear.
....... 201
. ......... 201
004-9011
004-9015
004-9016
Clip, T1, Black, .
Clip, T1, Clear ..
Clip. T1, Black, .
. 201
.......... 201
. ......... 201
004-9019
Rectangular Mounting Part .
.......... 201
004-9020
Reflector.
.......... 201
4N25
4N26
4N27
4N28
4N32
Isolator.
Isolator,
Isolator,
Isolator.
Isolator.
..........
.........
..........
.. ........
........
4N33
4N35
4N36
4N37
Isolator, Sngl , 500% Ctr, 1500V ................. 236
Isolator, Sngl" 100% Ctr, 2500V .
Isolator, Sngl., 100% Gtr. 1500V.
. ......... 235
. ......... 235
BP 100P
Photovoltaic, 25 nA .
.......... 375
BP
BP
BP
BP
103-1
103-2
103-3
103-4
PhotoXtr,
PhotoXtr,
PhotoXtr,
PhotoXtr,
TO-18,
TO-18,
TO-18,
TO-18,
BP
BP
BP
BP
103B-1
103B-2
103B-3
103B-4
PhotoXtr.
PhotoXtr,
PhotoXtr.
PhotoXtr,
T1%,
T1%,
T1 %,
T1 %,
Page
SngJ" 20% Ctr, 2500V ..
SngL, 20% Ctr. 1500V .
SngL. 10% Ctr. 1500V .
Sngl" 10% Ctr, 500V .
Sngl , 500%, 2500V
233
233
233
233
236
Isolator, Sngl., 100% Ctr, 3550V ........ , ........ 235
Page
Number
Description
BPY 62-1
BPY 62-2
BPY 62-3
PhotoXtr. TO-2S, So. 5.0 mA .
. ........ 355
PhotoXtr. TO-2S, So. 9.0 mA .
. ........ 355
PhotoXtr. TO-2S. 8 0 .14.0 mA ................... 355
BPY 64P
PhotoVoltaic .. 16 p.A.
CNY
CNY
CNY
CNY
17-1
17-2
17-3
17-4
Isolator.
Isolator.
Isolator.
Isolator,
Sngl., 40% Ctr, 4400V ..
. ........
. .......
Sngl , 63% Ctr. 4400V .
Sngl., 100% Ctr, 4400V .................
. .......
Sngl., 160% Ctr, 4400V ..
205
205
205
205
CNY
CNY
CNY
CNY
CNY
18-1
18-2
18-3
18-4
18-5
Isolator,
Isolator.
Isolator.
Isolator,
Isolator,
TO-72,
TO-72,
TO-72.
TO-72.
TO-72.
.
.........
.....
.. ......
.. ......
247
247
247
247
247
CQV
CQV
CQV
CQV
CQV
10-3
10-4
11-4
11-5
11-6
Lamp,
Lamp.
Lamp.
Lamp.
Lamp,
........
.. ......
........
.........
147
147
149
149
149
Red,
Red,
Red,
Red,
Red.
T1,
T1,
T1,
T1,
T1.
10%
16%
25%
40%
63%
1.0
1.6
1.6
2.5
4.0
........ 371
Ctr,
Ctr,
Ctr.
Ctr.
Ctr.
med.
med.
rned.
med.
mcd,
800V
BOOV
BOOV
800V
800V
.
..
.
.
.
20mA.
20mA.
20mA.
20mA.
20mA.
CQV 13-5
CQV 13-6
Lamp, Yellow, T1. 2.5 mcd, 20mA .
Lamp. Yellow, T1, 4.0 mcd, 20mA .
Lamp.
Lamp.
Lamp,
Lamp,
.......
.. .....
..
....
345
345
345
345
CQV
CQV
CQV
CQV
. .........
. .........
. .........
.
343
343
343
343
CQV 16-2
CQV 16-3
CQV 16-4
Lamp, Red. Square .. 63 med, 20mA.
Lamp, Red, Square, 1.0 mcd, 20mA.
Lamp, Red, Square, 1.6 mcd. 20mA.
BP 104
BPW32
BPW33
BPW34
PhotoDiode, 25,uA 10 nS..
. .........
PhotoDiode.7 nA. 1000 nS .
. ....
PhotoDiode.35 nA, 1000 nS .
. ...............
Photo Diode. 50 nA, 50 nS
..................
313
325
315
317
CQV 18-2
CQV 18~3
CQV 18-4
Lamp. Yellow, Square, .63 mcd, 20mA .
135
Lamp, Yellow, Square, 1.0 mcd, 20mA ........... 135
Lamp, Yellow, Square, 1.6 mcd, 20mA .......... 135
BPX
BPX
BPX
BPX
38-1
38-2
38-3
38-4
PhotoXtr.
PhotoXtr,
PhotoXtr,
PhotoXtr.
TO-iS,
TO-iS,
TO-iS,
TO-18,
40 0 ,.4 rnA.
. 351
40 0 • .63 rnA ................... 351
40 0 , 1.0 rnA .
. ..... 351
40',1.6 mA .
.. ........ 351
CQV 19-2
CQV 19-3
CQV 19-4
Lamp, Green. Square, .63 mcd. 20mA
....... 135
Lamp, Green, Square. 1.0 mcd, 20mA ........... 135
........ 135
Lamp. Green, Square, 1.6 mcd, 20mA
BPX 43-1
BPX 43-2
BPX 43-3
TO-18.
TO-iS,
TO-18,
TO-18,
20'.
20 0 ,
20'.
20 0 ,
Lamp,
Lamp,
Lamp,
Lamp,
Lamp,
BPX 43-4
PhotoXtr.
PhotoXtr,
PhotoXtr,
PhotoXtr,
CQV
CQV
CQV
CQV
CQV
BPX
BPX
BPX
BPX
BPX
BPX
PhotoOiode, Differential.
PhotoOiode,2 Lead, 35nA, 1000 nS
PhotoOiode,2 Lead, 50 nA 50 nS .
PhotoOiode, TO-18, 10 nA. 1000 nS .
PhotoDiode, TO-i8, 7 nA, 1 nS
PhotoOiode, TO-iS,S nA. 5 nS .
.. ........
.
.. ........
. .........
..........
. .........
BPX 79
PhotoVoltaic, .3,uA.
.......... 373
BPX 80
BPX8H
BPX 81-2
BPX 81-3
BPX 81-4
PhotoXtr,
PhotoXtr,
PhotoXtr,
PhotoXtr,
PhotoXtr,
48
60
61
63
65
66
160fJ.A.
250 fJ.A.
400/.lA.
630,uA.
55 0
55 0
55 0
55 0
1.6
2.5
4.0
.6.3
,
,
rnA.
rnA.
rnA .
rnA .
1.6
2.5
4.0
6.3
mA
mA
mA
rnA
10 Chip Array.
Min. 18 0 , .16 mA.
Min.1S o, 25 mA.
Min. iSO, .40 rnA.
Min. iSo, .63 rnA.
.
. .........
.
. ....
...................
.
..........
353
353
353
353
311
305
307
297
299
301
.. ................
.. ........
.. ....
.. .................
.. ........
359
359
359
359
359
BPX
BPX
BPX
BPX
82
83
84
85
PhotoXtr,2 Chip
PhotoXtr, 3 Chip
PhotoXtr,4 Chip
PhotoXtr, S Chip
Array.
Array.
Array.
Array.
...................
..
.. ................
..
359
359
359
359
BPX
BPX
BPX
BPX
86
87
88
89
PhotoXtr, 6 Chip
PhotoXtr, 7 Ch ip
PhotoXtr, S Chip
PhotoXtr,9 Chip
Array.
Array.
Array.
Array.
.......
..........
......................
...
359
359
359
359
BPX
BPX
BPX
BPX
90
91B
92
93
PhotoOiode,
PhotoDiode,
PhotoDiode,
PhotoDiode,
2 Lead 25 nA, SOD nS .. . .........
SOnA, 2.5,uS ......................
2 Lead 4 nA 800 nS
..........
2 Lead 5 nA, SOD nS
.
321
319
331
323
BPY 11P-4
BPY 11P-5
BPY 11P-6
PhotoVo!taic, 28nA. 4.7 p.A.
PhotoVoltaic, 28nA, 5.6,uA.
PhotoVoltaic, 2BnA. 7.1 ,uA.
BPY 47P
BPY 48P
PhotoVoltaic, .9 ,uA.
PhotoVoltaic, .3,uA.
.377
.. ........ 377
.......... 377
.......... 365
...................... 369
11
15-3
15-4
15-5
15-6
.. ...... 151
.. ... 151
20-3
20-4
21-4
21-5
21-6
Green,
Green.
Green.
Green,
Red.
Red.
Red,
Red,
Red,
T1.
T1.
T1.
T1,
T1 %.
T1 %.
T1%,
TH4,
TH'4,
1.0 mcd,
1.6 mcd,
2.5 mcd,
4.0 mcd,
1.0
1.6
1.6
2.5
4.0
med,
mcd,
mcd,
med,
mcd,
20mA.
........
20mA.
. ........
20mA ................
20mA.
. .......
20mA
20mA
20mA
20mA
20mA
Lamp, Yellow, TP/4. 1.6 mcd, 20mA .
Lamp, Yellow, T13J4, 2.5 mcd, 20mA.
Lamp, Yellow, T13J4, 4.0 mcd, 20mA.
CQV
CQV
CQV
CQV
Lamp,
Lamp,
Lamp.
Lamp,
25-3
25-4
25-5
25-6
Green,
Green,
Green,
Green,
T13J4,
T1%,
TH4.
T1%.
1.0
1.6
2.5
4.0
mcd.
mcd,
mcd,
mcd,
.. ...... 135
. ........ 135
.. ...... 135
.
. ....
.................
.................
.
. ........
..
. ........
CQV 23-4
CQV 23-5
CQV 23-6
20mA
20mA
20mA
20mA
153
153
153
153
97
97
99
99
99
........ 101
........ 101
.. ...... 101
..............
.
. .....
.
. .......
.
. .......
103
103
103
103
CQV 26-2
CQV 26-3
CQV 26-4
Lamp, Red, Triang .. 63 mcd, 20mA .
Lamp, Red, Triang. 1.0 mcd, 20mA
Lamp, Red, Triang. 1.6 mcd, 20mA .
CQV 28-2
CQV 28-3
CQV 28-4
Lamp. Yellow, Triang .. 63 mcd, 20mA.
. 139
. 139
Lamp, Yellow, Triang. 1.0 mcd, 20mA.
Lamp, Yellow, Triang. 1.6 med, 20mA ............ 139
CQV 29-2
CQV 29-3
CQV 29-4
Lamp, Green, Triang .. 63 med, 20mA ............ 139
. ..... 139
Lamp. Green, Triang. 1.0 mcd, 20mA .
. ....... 139
Lamp, Green, Triang. 1.6 mcd, 20mA .
CQV
CQV
CQV
CQV
CQV
Lamp,
Lamp.
Lamp,
Lamp,
Lamp,
30A
308
30C
310
31E
Red,
Red,
Red,
Red,
Red,
T1,
T1,
T1,
T1,
T1,
1.0
1.6
2.5
4.0
6.3
.. 139
........ 139
.. ..... 139
mcd,20mA.
.147
med,20mA.
. ... 147
. ....... 147
mcd, 20mA.
mcd, 20mA.
. .. 149
mcd, 20mA .................. 149
CQV 330
CQV 33E
Lamp, Yellow. T1, 4.0 mcd, 20mA .
Lamp, Yellow, T1, 6.3 mcd. 20mA .
CQV 350
CQV 35E
Lamp, Green, T1, 4.0 mcd, 20mA ................ 153
, ..... 153
Lamp, Green, T1, 6.3 mcd. 20mA.
CQV 36-3
CQV 36-4
CQV 36-5
Lamp, Red, Rect.. 1.0 mCd. 20 mA ............... 123
. ....... 123
Lamp, Red, Reet., 1.6 mcd. 20 mA.
. ....... 123
Lamp, Red, Rect., 2.5 mcd, 20 mA.
CQV 38-3
CQV 38-4
CQV 38-5
Lamp, Yellow, Rect., 1.0 mcd, 20 mA
........ 123
Lamp, Yellow, Rect., 1.6 mcd, 20 rnA ............ 123
. ....... 123
Lamp, Yellow, Rect., 2.5 mcd, 20 mA.
... 151
..... 151
ALPHANUMERIC INDEX (con't)
Part
Number
Page
Description
COV39-3
COV 39-4
COV39-5
Lamp. Green. Reet.. 1.0 mcd. 20 mA ............. 123
COV 51F
COV 51G
COV 51H
COV 51J
Lamp.
Lamp.
Lamp.
Lamp.
COV 53F
COV53G
COV53H
COV 53J
Lamp. Yellow. TI%. 10 mcd. 20 mA .............. 101
Lamp. Yellow. TI%. 16 mcd. 20 mA .............. 101
COV55G
COV 55H
COV55J
COV55K
Lamp.
Lamp.
Lamp.
Lamp.
COV 56-2
COV 56-3
COV 56-4
Lamp. Red. Cylinder..63 mcd. 20 mA ............ 131
Lamp. Red. Cylinder. 1.0 mcd. 20 mA ............ 131
Lamp. Red. Cylinder. 1.6 mcd. 20 mA ...•........ 131
COV 58-2
COV 58-3
COV 58-4
Lamp. Yellow. Cylinder, .63 mcd. 20 mA ......... 131
Lamp. Yellow. Cylinder. 1.0 mCd. 20 mA ......... 131
Lamp. Yellow. Cylinder. 1.6 mcd. 20 mA ......... 131
COV59-2
COV59-3
COV 59-4
Lamp. Green. Cylinder ..63 mcd. 20 mA .......... 131
Lamp. Green. Cylinder. 1.0 mcd. 20 mA .......... 131
Lamp. Green. Cylinder. 1.6 mcd. 20 mA .......... 131
COX 13-1
COX 13-2
Lamp. Green, LowT1%.1.6 mcd,20 rnA ......... 119
COX 23-1
COX 23-2
Lamp. Red. Low T1%. 1.6 mcd. 20 mA ........... 119
Lamp. Red. Low T1%. 2.8 mcd. 20 mA ........... 119
COX 33-1
COX 33-2
Lamp. Yellow. Low TI%. 1.6 mcd. 20 mA ......... 119
Lamp. Yellow. Low T1%. 2.8 mcd. 20 mA •........ 119
COY 17-4
COY 17-5
COY 77-1
COY 77-2
Emitter. Infraned. TO-18. 15·. 1.1 mW ............ 265
COY 77-3
COY 78-1
COY 78-2
COY 78-3
Emitter.
Emitter,
Emitter.
Emitter.
Infrared.
Infrared.
Infrared.
Infrared.
DL-57
DL-330M
DL-340M
DL-416
Display,
Display.
Display.
Display.
Red •.35" 5 x 7 Dot Matrix ...............
Red •. 11" C.C. MPX. 3 Digit ..............
Red •. 11" C.C. MPX. 4 Digit ......•.......
Red. 16 Seg Alpha. 4 Digit .•.............
DL-430M
DL-440M
Display. Red ..15" C.C. MPX. 3 Digit .............. 53
Display. Red •. 15" C.C. MPX. 2 Digit .............. 53
Lamp, Green, Reet.,l.S mcd. 20 rnA ............. 123
Lamp. Green. Rect.. 2.5 mcd. 20 mA ............. 123
Red.
Red.
Red.
Red.
TI%. 10 mcd. 20
T1%. 16 mcd. 20
TH•. 25 mcd. 20
TI%. 40 mcd. 20
mA
mA
mA
mA
.................
.................
.................
.................
99
99
99
99
Lamp, Yellow, T1%, 25 mcd, 20 rnA .............. 101
Lamp. Yellow. T1%. 40 mcd. 20 mA •............. 101
Green. TI%.16
Gneen. TI%. 25
Green. T1%. 40
Green. T1%. 63
mcd. 20 mA
mcd. 20 mA
mcd. 20 mA
mcd. 20 mA
..............
..............
..............
..............
103
103
103
103
Emitter, Infrared, TO-1S, 150 , 1.8mW ............ 265
269
273
273
273
57
53
53
59
* DL-524
* DL-527
* DL-528
Display. Red, .50" C.C. ±1 Overflow. 2 Digit. ...... 51
Display. Red •.50" CA. D.P. Right. 2 Digit ...•..... 51
Display, Red •.50" C.C .. D.P. Right. 2 Digit ........ 51
* DL-701
* DL-702'
Display. Red. 0.3" C.A. ±1 Overflow .............. 41
Display. Red •.0.3" C.C .. D.P. Left ................ 43
* DL-704
* DL-707
* DL-707R
* DL-721
* DL-722
* DL-727
* DL-728
Display.
Display.
Display.
Display.
* DL-746
* DL-747
* DL-749
* DL-750
DL-1414
DL-1416
DL-2416
DL-2416H
DL-3416
DL-3416H
DL-3422
Red. 0.3"
Red. 0.3"
Red. 0.3"
Red •.51"
C.C .. D.P. Right ................
CA. D.P. Left ...............•.
CA. D.P. Right. ..........•....
CA ±1 Overflow. 2 Digit .......
43
41
41
49
Display. Red •.51" C.C. ±1 Overflow. 2 Digit ....... 49
Display. Red •.51" C.A. D.P. Right. 2 Digit ......... 49
Display. Red •.51" C.C .. D.P. Right. 2 Digit. ........ 49
C.A. ±1 Overflow ..............
CA. D.P. Left .................
C.C .• ±1 Overflow ......... : ...
C.C .. D.P. Left .................
45
45
45
45
Display. Red •. 112". Intelligent. 4 Digit •...........
Display. Red •. 160". Intelligent. 4 Digit .........•..
Display. Red •. 160". Intelligent. 4 Digit .....•....••
Red ..160". Intelligent. 4 Digit ....................
Display. Red •.225". Intelligent. 4 Digit ..........••
Display. Red •.225". Intelligent. 4 Digit ....•••...•.
Display. Red. 22 SEG. Intelligent. 4 Digit ..........
67
71
75
75
79
79
83
Display.
Display.
Display.
Display.
Red •.63"
Red •.63"
Red •.63"
Red •.63"
Display. Red •.60" CA. D.P. Left .................
Display. Red ..60" CA. D.P. Right ................
Display. Red •.60" C.C .. D.P. Left .................
Display. Red •.60" C.A., D.P. Left .................
Display. Red •.80" ±1 Overflow ...................
DL-4770
Display. Red •. 27"C.C. MPX. 4 Digit ............... 23
DL-5735
Display. Red •.69" 5 x 7 Dot Matrix ............... 61
DL-7730
DL-7731
DL-7734
DL-774O
Display.
Display.
Display.
Display.
Red •.30"
Red •.30"
Red •.30"
Red •.30"
C.A .•
CA.
C.C .•
C.C .•
Left .................
Right ................
Right. ...............
Right ................
25
25
25
25
DL-7750S
DL-7751S
DL-7756S
DL-7760S
Display.
Display.
Display.
Display.
Re,d •.43"
Red •.43"
Red ..43"
Red •.43"
CA, D.P. Left .................
C.A., D.P. Right ................
Univ. ±1 Overflow .............
C.C .• D.P. Right ................
31
31
31
31
DLG-7670S
DLG-7671S
DLG-7673S
DLG-7676S
Display. Green •.43" CA. D.P. Left ............... 31
* DL0-524
* DLO-527
Emitter. Infrared. TO-18. 6·. 8 mW ............. 269
Emitter. Infrared. TO-18. 6·. 12.5 mW ............ 269
6·.20 mW .............
40·.1.0 mW ............
40·.1.6 mW ............
40·. 2.5 mW ............
Description
DL-3400
DL-3401
DL-3403
DL-3405
DL-3406
* DL0-528
Lamp. Green. LowT1%.2.8 mcd.20 mA ......... 119
TO-18.
TO-18.
TO-18,
TO-18.
Part
Number
... Not recommended for new design-phasing out.
12
Page
D.P.
D.P.
D.P.
D.P.
39
39
39
39
39
Display, Green . .43" CIA., D.P. Right .............. 31
Display. Green •.43" C.C .• D.P. Right. ............. 31
Display. Green ..43" Univ. ±1 Overflow ........... 31
Display. Hi. Elf. Red •.50" C.C. ±1 Overflow ....... 51
Display. Hi. Elf. Red •.50" C.A .• D.P. Right ......... 51
Display. Hi. Elf. Red •.50" C.C .• D.P. Right ......... 51
DL0-3900
DL0-3901
DL0-3903
DL0-3905
DL0-3906
Display.
Display.
Display.
Display.
Display.
DL0-4770
Display. Hi. Elf. Red •.27" C.C. MPX. 4 Digit ....... 23
DLO-7610
DLO-7611
DLO-7613
DLO-7614
Display.
Display.
Display.
Display.
Hi.
Hi.
Hi.
Hi.
Elf.
Elf.
Elf.
Elf.
Red •.30"
Red •.30"
Red •.30"
Red •.30"
CA D.P.
CA D.P.
C.C. D.P.
C.C. D.P.
DLO-7650S
DLO-7651S
DLO-7653S
DLO-7656S
Display.
Display.
Display.
Display.
Hi.
Hi.
Hi.
Hi.
Elf.
Elf.
Elf.
Elf.
Red ..43"
Red •.43"
Red •.43"
Red •.43"
CA.
C.A..
C.C .•
Univ.
DLY-7660S
DLY-7661S
DLY-7663S
DLY-7666S
Display. Yellow •.43" CA. D.P. Left ............... 31
Display. Yellow ..43" C.A .• D.P. Right ............. 31
Display. Yellow •.43" C.C .• D.P. Right ............. 31
FRL-2000
FRL-4403
Lamp. Red. T1%. Flashing ...................... 183
Lamp. Red. TI%. Flashing ...................... 185
GBG-I000
Display. Green. 10 Element Bar Graph ............ 63
GL-56
GL-211
GL-4484
GL-4650
GL-4950
Lamp. Green. Min. Axial ........................ 172
Lamp. Green. TI •.8 mcd. 20 mA ................ 163
Lamp. Green. TI. No Min. mcd .................. 163
Lamp. Green. T1%.1.0 mcd. 20 mA .............. 115
HD
HD
HD
HD
1075G
10750
1075R
1075Y
Display.
Display.
Display.
Display.
Green •.28. CA. D.P. Right ..............
Hi. Elf. Red •.28. CA. D.P. Right ..•......
Red •.28. CA. D.P. Right ...........•....
Yellow•. 28. CA. D.P. Right ...•..........
19
19
19
19
HD 1077G
HD 10770
HD 10nR
HD 10ny
Display.
Display.
Display.
Display.
Green •.28. C.C .• D.P. Right ..............
HI. Elf. Red •.28. C.C .• D.P. Right .........
Red •.28. C.C.• D.P. Right ................
Yellow•.28. C.C .• D.P. flight ..............
19
19
19
19
HD
HD
HD
HD
Display.
Display.
Display.
Display.
Gneen •.39. CA. D.P. Right ..............
Hi. Elf. Red ..39. CA. D.P. Right .........
Red •.39. CA. D.P. Right ................
Yellow .39. CA. D.P. Right ..............
27
27
27
27
HDl106G
HDl1060
HDl106R
HD l106Y
Display. Green •.39. ±1 Overflow ...........•.....
Display. Hi. Elf. Red •.39. ±1 Overflow ............
Display. Red •.39. ±1 Overflow ...................
Display. Yellow .39. ±1 Overflow .................
27
27
27
27
HD1107G
HD 11070
HD 1107R
HD 1107Y
Display.
Display.
Display.
Display.
27
27
27
27
1105G
11050
l105R
1105Y
Hi.
Hi.
Hi.
Hi.
Hi.
Elf.
Elf.
Elf.
Elf.
Elf.
Red •.8"
Red •.8"
Red •.8"
Red •.8"
Red •.8"
C.A. D.P. Left ............
C.A. D.P. Right ...........
C.C. D.P. Right. ..........
C.C. D.P. Left ............
Univ. ±1 Overflow ........
39
39
39
39
39
Left ...........
Right ..........
Right .........
Right .........
25
25
25
25
D.P. Left ..........
D.P. Right .........
D.P. Right .........
±1 Overflow .......
31
31
31
31
Display, Yellow, .43" Univ. ±1 Overflow ........... 31
Lamp. Green, T1%, No Min. mcd ................ 115
Green .39" C.C .• D.P. Right ...•......•.•.
Hi. Elf. Red •.39" C.C .• D.P. Right .........
Red •.39" C.C .. D.P. Right ................
Yellow •. 39" C.C .• D.P. Right .............
Part
Number
Description
HD
HD
HD
HD
110BG
110BO
110BR
110BY
Display,
Display.
Display.
Display.
Green, 39" ±1 Overflow..
.
Hi. Eft. Red ..39" ±1 Overflow ............
Red ..39" ±1 Overflow.
Yellow.. 39" ±1 Overflow..
..
HD1131G
HD 11310
HD 1131R
HD 1131Y
Display.
Display.
Display.
Display.
Green .. 53" CA. D.P. Right .....
Hi. Eff. Red •. 53" CA. D.P. Right
Red .. 53" CA. D.P. Right ...... .
Yellow .. 53" CA. D.P. Right
HD 1132G
HD 11320
HD 1132R
HD 1132Y
Display. Hi. Eft. Red .. 53" ±1 Overflow.
Display. Red .. 53" ±1 Overflow ... .
HD 1133G
HD 11330
HD 1133R
HD 1133Y
Display.
Display.
Display.
Display.
HD 1134G
HD 11340
HD 1134R
HD 1134Y
Display, Green, .53" ±1 Overflow.
Display. Hi. Eff. Red ..53" ±1 Overflow ..
HD 14101G
HD 14101R
HllAAl
Display..39" CA 14 SEG .'
55
Display..39" CA 14 SEG ...............
. .. 55
Isolator. AC Input. 20% Ctr. 4000V (TYP) ........ 243
27
27
27
27
35
35
.. .... 35
.. 35
......
.. ......
.. ...
........
35
35
35
35
Green .. 53" C.C .. D.P. Right.. . .........
Hi. Eft. Red .. 53" C.C .. D.P. Right .........
Red ..53" C.C .. D.P. RighI. ...
Yellow .. 53" C.C .. D.P. Right .
35
35
35
35
Display, Green, .53" ±1 Overflow
Display, Yellow, .53" ±1 Overflow ... .
Display, Red, .53" ±1 Overflow.
Display, Yellow, .53" ±1 Overflow.
IDA-2416-16 Intel/igent Display Assembly, 16 Char.
IDA-2416-{J2 Intelligent Display Assembly. 32 Char..
.. .. 35
35
. 35
.. 35
. ...... 87
. ........ B7
IL-l
IL-5
IL-12
IL-74
Isolator.
Isolator.
Isolator.
Isolator.
Sngl ..
Sngl ..
Sngl..
Sngl..
20% Ctr. 2500 V.
.. .....
50% Ctr. 2500 V ..................
10% Ctr. 1000 V.
..
12.5% Ctr. 1500 V..
.. ......
IL-l00
IL-l0l
IL-201
IL-202
Isolator.
Isolator.
Isolator.
Isolator.
Sngl ..
Sngl ..
Sngl..
Sngl..
Hi-Speed. 65 ns ...
Hi-Speed. 100 ns
75% Ctr. 5000 V. .
125% Ctr. 5000 V ..
IL-203
IL-250
IL-501
IL-505
IL-512
Isolator. Sngl.. 225% Ctr. 5000 V ...
.
Isolator, Bidirectional, 50% eTR, 5000 V ... .... ..
Isolator.Sngl .. 20% Ctr. 5000 V.
..
Isolator. Sngl.. 50% Ctr. 5000 V. . . .
..
Isolator. Sngl .. 10% Ctr. 5000 V...
..
IL-530
IL-555
Isolator, 8ng1., 100% etr, 5000 V ..
Isolator, 8ngL, 100% etf, 5000 V
ILA 30
ILA55
I LCA2-30
I LCA2-55
Isolator.
Isolator.
Isolator.
Isolator.
ILCT6
ILD-l
ILD74
Isolator. Dual. 20% Ctr. 2500 V
Isolator, Dual. 12.5% etf, 1500 V ..
ILD-5OB
Isolator. Dual 20% Ctr. 5000 V
ILQ-l
ILQ74
Isolator. Quad. 20% Ctr. 2500 V .
. ........ 209
Isolator. Quad. 12.5% Ctr. 1500 V ................ 217
IRL-60
Emitter. Infrared, Miniature. Wide Beam ......... 289
LD30-1
LD 30-2
LD 30-3
LD30A
LD30C
Lamp.
Lamp.
Lamp.
Lamp.
Lamp.
LD32-1
LD32..2
LD32C
Lamp. Hi. Eft. Red. Tl. 1.2 mCd. 10 mA .......... 149
Lamp. Hi. Elf. Red. Tt. 2.0 mcd.l0 mA .......... 149
Lamp. Hi. Elf. Red. Tt. 2.5 mcd. 10 mA .......... 149
LD36·1
LD 36·2
LD36A
LD36C
Lamp.
Lamp.
Lamp.
Lamp.
Yellow.
Yellow.
Yellow.
Yellow.
Ttl.0 mcd.l0 mA ...............
Ttl.6 mcd.l0 mA ...............
Tl .6 mcd. 10 mA .................
Tl 2.0 mcd. 10 mA ...............
151
151
151
151
LD37-1
LD 37-2
LD37A
LD37C
Lamp.
Lamp.
Lamp.
Lamp.
Green.
Green.
Green.
Green.
Tl. 2.0 mcd. 20 mA ...............
Tl. 3.2 mCd. 20 mA ...............
Tl •. 5 mCd. 20 mA ................
Tl. 4.0 mcd. 20 mA ...............
153
153
153
153
Sngl..
Sngl ..
Sngl..
Sngl ..
100% Ctr.
100% Ctr.
100% Ctr.
100% Ctr.
1500 VD
1500 VD
1500 VD
1500 VD
209
213
215
217
. ........ 249
253
. .. 221
.. 221
221
245
223
223
223
.. 241
.. 241
C ..
C ..
C ..
C .. .
Isolator. Dual, 20% etr, 1500 V . .... .
Red.
Red.
Red.
Red.
Red.
Part
Number
Page
.
..
..
.....
237
237
239
239
..... 255
... 209
.. 217
............. 25B
Tt.l.0 mCd. 20 mA .................
Tt.2.0 mcd.20 mA .................
Tl. 3.2 mcd. 20 mA ................
Tl •.3 mCd. 20 mA ..................
Tt. 1.0 mcd. 20 mA .................
147
147
147
147
147
13
Page
Description
LD41-1
LD41-2
LD41A
LD50-1
LD 50-2
LD50A
Lamp, Red, T1%, 1.0 mcd, 20 mAo
.......... 97
Lamp, Red, n%, 2.0 mcd, 20 mA ................. 97
Lamp, Red, T1 %, .3 med, 20 rnA .
. .. 97
LD52-1
LD 52-2
LD52C
LD52CA
Lamp,
Lamp,
Lamp,
Lamp,
Hi.
Hi.
Hi.
Hi.
Eft.
Eff.
Eft.
Eff.
Red,
Red,
Red,
Red,
T1%,
T1%,
T1%,
T1%,
LD 56-1
LD 56-2
LD56A
LD56C
LD 56CA
Lamp.
Lamp,
Lamp,
Lamp,
Lamp,
Yellow,
YellOW,
Yellow,
Yellow,
Yellow,
T1%.
T1 %,
Tl%,
T1%,
Tl%,
1.0 med, 10 mA.
. ........
1.6 med, 10 mA .............
.6 med, 10 mA
.......
10 med, 10 rnA.,.
. .....
6.0 med, 10 rnA ..
. ..
101
101
101
101
101
LD57-1
LD 57-2
LD57A
LD57C
LD57CA
Lamp,
Lamp.
Lamp,
Lamp,
Lamp,
Green,
Green,
Green,
Green,
Green,
Tl%,
Tl%,
Tl%,
T1%,
T1%,
2.0 med, 20 rnA.
. ..
3.2 mCd. 20 rnA ..............
.6 mcd, 20 mA.
. ........
20 med, 20 rnA
.........
12 med, 20 rnA
103
103
103
103
103
LDBO-l
LD BO-2
LDBOA
Lamp, Red, Tl%, Reet. 1.0 mcd, 20 rnA .......... 127
Lamp, Red, Tl%, Reet. 1.6 med, 20 rnA ... , ...... 127
Lamp, Red. T1 %, Reel. .6 med, 20 mA . . ........ 127
LDB2-1
LD B2-2
LDB2A
Lamp, Hi. Eff. Red. T1%, Reet.l.O med, 20 mAo . 127
Lamp, Hi. Eft. Red. T1%, Reet.l.6 med, 20 mA .... 127
Lamp, Hi. Eft. Red, T1%, Reet. .6 mcd, 20 mA ..... 127
LDB6-1
LD B6-2
LDB6A
Lamp, Yellow, T1%, Reet.l.0 med, 20 rnA ........ 127
Lamp, Yellow, T1 %, Reet. 1.6 med, 20 mA . ..... .. 127
Lamp. Yellow, T1%, Reet. .6 m'ed. 20 mA .
. 127
LDB7-1
LD B7-2
LDB7A
Lamp, Green, Tl%, Reet.l.0 med, 20 rnA.
.. 127
Lamp, Green, T1%, Reel. 1.6 med, 20 mA ........ 127
Lamp, Green. T1%, Reet. .6 med, 20 mA ......... 127
LD
LD
LD
LD
LD
LD
100-35
loo-3t
100-45
loo-4t
100-55
loo-5t
Lamp,
Lamp,
Lamp,
Lamp,
Lamp,
Lamp,
Tl%,
T1%.
T1%,
T1%,
T1%.
T1%,
2
2
2
2
2
2
Color,
Color,
Color,
Color,
Color,
Color,
Red
Red
Red
Red
Red
Red
& Green,
& Green,
& Green,
& Green,
& Green,
& Green,
LD
LD
LD
LD
LD
LD
110-2•
110-2t
110-35
110-3t
110-45
110-4t
Lamp.
Lamp,
Lamp,
Lamp,
Lamp.
Lamp,
Reet.
Reet.
Reet.
Reel.
Reet.
Reet.
2
2
2
2
2
2
Color,
Color,
Color.
Color,
Color,
Color,
Red
Red
Red
Red
Red
Red
& Green,
& Green,
& Green,
& Green,
& Green,
Lamp. Red. Tl%. 2.0 mcd. 20 rnA ................. 97
Lamp, Red, T1%, 3.2 med, 20 mA ................. 97
Lamp, Red, Tl %, 1.0 med, 20 mA .
. .. .. 97
1.2 med, 10 rnA
2.0 med. 10 mA
15 med, 10 mA
9.0 med, 10 rnA
1.0
1.0
1.6
1.6
2.5
2.5
& Green, .63
.63
1.0
1.0
1.6
1.6
.........
..........
..........
..........
med
med
med
med
med
med
99
99
99
99
, .....
......
......
..
......
193
193
193
193
193
193
med ......
med. . ..
mcd . .....
med. . ..
med ......
mcd ......
195
195
195
195
195
195
LD 111-25
LD 111-2t
LD 111-35
LD 111-31
LD 111-45
LD111-4t
Lamp. Sq .. 2 Color. Red & Green .. 63 mcd
Lamp, Sq., 2 Color, Red & Green, .63 med
Lamp, Sq., 2 Color. Red & Green. 1:0 med
Lamp. Sq .. 2 Color. Red & Green. 1.0 mcd
Lamp. Sq .• 2 Color. Red & Green. 1.6 mcd
Lamp. Sq .. 2 Color. Red & Green. 1.6 mcd
LD 112-25
LD 112-2t
LD 112-35
LD112-{Jt
LD 112-45
LD 112-4t
Lamp. Trg .. 2 Color. Red & Green .. 63 mcd ...... ,
Lamp, Trg., 2 Color, Red & Green, .63 med.
"
Lamp. Trg .• 2 Color. Red & Green. 1.0 rncd .......
Lamp. Trg .. 2 Color. Red & Green. 1.0 mcd .......
Lamp. Trg .. 2 Color. Red & Green. 1.6 mcd .......
Lamp, Trg., 2 Color, Red & Green, 1.6 mcd .......
LD 121
LD161
LD 171
. ..... 179
Lamp, Red, Ultra Min, .5 med, 10 mA .
Lamp, Yellow, Ultra Min, .4 .ned, 10 mA..
. .. 179
Lamp, Green, Ultra Min, .6 med, 10 mA .......... 179
LD 242-1
LD 242-2
LD 242-3
LD 260
Emitter. Infrared. Mod TO-lB. 60'. 2.5 mW..
.. 2Bl
Emitter. Infrared. Mod TO-lB. 60'. 4.0 mW ........ 281
LD 261-4
LD 261-5
LD 261-6
LD262
LD263
Emitter.
Emitter,
Emitter,
Emitter,
Emitter,
....... 197
.
. 197
....... 197
... 197
197
....... 197
199
199
199
199
199
199
Emitter, Infrared, Mod TO-18, 60°,6.3 mW .. , .. ... 281
Emitter, Infrared, Array, 10 Diode .. ,....
. .. 293
Infrared,
Infrared,
Infrared,
Infrared,
Infrared,
Min Radial, 30°, 2.0 mW ........
Min Radial, 30°, 3.2 mW..
. ..
Min Radial, 30°, 5.0 mW,.
..
Array, 2 Diode.,
....
Array, 3 Diode....
..
293
293
293
293
293
ALPHANUMERIC INDEX (con't)
Part
Number
Description
LD 264
LD265
LD266
LD 267
LD 268
LD269
Emitter,
Emitter,
Emitter,
Emitter,
Emitter.
Emitter,
Infrared,
Infrared,
Infrared,
Infrared,
Infrared,
Infrared,
LD
LD
LD
LD
Emitter,
Emitter,
Emitter,
Emitter,
,Infrared, .Mod T1%, 25°, 10 mW ..
T1 %, 25°, 7 mW .
T1%, 25°,16 mW ... , .... , ...•.
Two Fold Intensity, 25°, 30 mW.,
271
271A
271H
273
Page
Array,
Array,
Array,
Array,
Array,
Array,
4
5
6
7
8
9
Diode.
Diode.
Diode.
Diode ....
Diode.
Diode.
293
293
.. 293
.. 293
.. 293
293
277
277
.. 277
.. 2B7
LD 460
LD461
LD462
LD 463
LD 464
Lamp,
Lamp,
Lamp.
Lamp,
Lamp,
LD 466
LD 468
LD 469
Lamp, Red, Array, 6 Diode.
Lamp, Red, Array, 8 Diode ...
Lamp. Red, Array, 9 Diode.
LD470
LD 471
LD473
LD474
Lamp.
Lamp,
Lamp,
Lamp,
Green,
Green,
Green,
Green,
Array, 10 Diode ... .
Single, Diode ... .
Array, 3 Diode .... .
Array, 4 -Diode.
LD 476
LD477
LD 47B
LD479
Lamp,
Lamp,
Lamp,
Lamp,
Green,
Green,
.Green,
Green,
Array,
Array,
Array,
Array,
LD 4BO
LD 4B1
LD 484
Lamp, Yellow, Array, 10 Diode
Lamp, Yellow, Single Diode ..... '.
Lamp, Yellow, Array, 4 Diode ..
LD 4B6
LD4BB
Lamp, Yellow, Array, 6 Diode.
Lamp, Yellow, Array. 8 Diode.
LD 602-2
LD 602-3
LD 602-4
Lamp, Hi. Eff. Red, Arrow, .63 mcd.
Lamp, Hi. Eft. Red, Arrow 1.0 mcd.
Lamp, Hi. Eft. Red, Arrow 1.6 mcd.
LD 606-2
LD 606-3
LD 606-4
Lamp, Yellow, Arrow 63 mcd ..
Lamp, Yellow, Arrow 1.0 mcd
Lamp. Yellow. Arrow 1.6 mcd .
LD 607-2
LD 607-3
LD 607-4
lamp, Green, Arrow .63 mcd .................... 143
Lamp, Green, Arrow 1.0 mcd ..
. ... 143
Lamp, Green, Arrow 1.6 mcd
... 143
LPT-100
LPT-100A
LPT-100B
LPT-110
LPT-110A
LPT-110B
Phototransistor,
Phototransistor,
Phototransistor,
Phototransistor,
Phototransistor,
Phototransistor,
OBG-1000
Display, Orange, 10 Element Bar Graph ........... 63
Lamp,
Lamp,
Lamp,
Lamp,
* OL-30-3
* OL-30~
* OL-31-2
* OL-31-4
RBG-10oo
* RL-2
Red,
Red.
Red;
Red,
Red,
Array, 10 Diode ..... .
Single, Diode
Array, 2 Diode.
Array. 3 Diode ....... ,.
Array, 4 Diode ..
Orange,
Orange,
Orange,
Orange,
6
7
8
9
........
.......
.......
.......
...
173
173
173
173
173
....... 173
.... 173
.... 173
.
...
...
. ...
175
175
175
175
Diode. . .
.
Diode.... .
. ..
Diode ....................
Diode.
. ........
175
175
175
175
Ceramic, 30°,
Ceramic, 30°,
Ceramic. 30°,
Ceramic. 30°,
Ceramic, 30°,
Ceramic, 30°,
177
. ....... 177
. .. 177
. .... 177
. .. 177
. ... 143
. ..... 143
. .. 143
.. 143
.. 143
. ....... 143
.2 mA .
..
1.0 mA ...........
1.3 mA
...
.2· mA ............
.6 mA
..
.8 mA .
..
T1%, 3.0 mcd, 20 rnA ..
T1 %, 6.0 mCd, 20 rnA
T1, 1.5 mcd, 20 mA .
T1, 4.0 mcd. 20 mA .
Display, Red, 10 Element Bar Graph
Lamp, Red, Compact, Diffused ..
347
347
347
347
347
347
Part
Number
Description
RL-4480
RL-44BO-1
RL-44BO-2
RL-44BO-5
RL-44B4
Lamp.
Lamp.
Lamp.
Lamp,
Lamp.
Red.
Red.
Red.
Red,
Red.
T1 .. 100
T1 .. 100
T1 .. 100
T1, .100
T1 .. 050
Leads.
Leads.
Leads.
Leads,
Leads.
RL-4850
RL-5053-1
RL-5053-2
RL-5053-3
RL-5053A
Lamp.
Lamp,
Lamp,
Lamp,
Lamp,
Red,
Red,
Red,
Red,
Red,
T1%, No
T1 %, 1.0
T1 %, 1.6
T1%, 2.5
T1 %,0.3
Min mcd ...
mcd, 20 mA.
mcd, 20 mA .
mcd, 20 mA.
mcd, 20 rnA.
RL-5054-1
RL-5054-2
Lamp. Red, T1 %, 1.0 rncd, 10 mA .
Lamp, Red, T1%, 2.0 mcd, 10 mA.
RLC-200
RLC-201
RLC-210
Lamp, Red, T1%, Constant Current 20 rnA ..
187
Lamp, Red, T1%, Constant Current 10 rnA
189
Lamp, Red, T1, Constant Current 10 mA ... , .... , 191
Page
Flangel~ss,
.3 mcd .............
1.0 mcd .............
2.0 mcd .............
No Min mcd .
. ..
No Min mcd ..
. ...
..
..
.. ...
..
..
105
107
107
107
107
..... 109
.... 109
RLT1
Lamp, Red, T1,
SFH 100
Photodiode. 150 nA ................ .
SFH 200
SFH 202
SFH 203
Photodiode. 20 nA. 1.0 MS ....
Photodiode. 10 nA. .5 nS ..
Photodiode, 7.5 nA, 1.0.uS .
SFH
SFH
SFH
SFH
Photodiode,
Photodiode.
Photodiode.
Photodiode.
204
205
206
206K
155
155
155
155
157
Diffused.
.... 165
.. 327
.. ... 329
. ........... 303
.. ... 309
.11 nA, 4 pS
50 MA. 50 nS .
50 MA. 50 nS ...... .
70 nA. 50 nS .... .
.....
.. ..
.......
.........
339
333
335
337
SFH 305-2
SFH 305-3
SFH 309
Photoxtr, Miniature, 16°, 1.0 mA ....:,f,,".
Photoxtr, Miniature, 16°; 1.6 mA ... :
Photoxtr, T1, 1 rnA .............. .
SFH 400-1
SFH 400-2
SFH 400-3
Emitter, Infrared, TO-18, 6°,12.5 mW
... 271
Emitter, Infrared, TO-18, 6 0 , 20 mW, .. , .......... 271
0
Emitter, Infrared, TO-18, 6 , 32 mW. .
. , 271
SFH 401-1
SFH 401-2
SFH 401-3
Emitter, Infrared, TO-18, 15°,6.3 mY! ..
Emitter. Infrared, TO-18, 15°, 10 rOw"
Emitter, Infrared, TO-18, 15 0 , 16 mW,..
.267
.. 267
.. ...... 267
SFH 402-1
SFH 402-2
SFH 402-3
Emitter, Infrared, TO-18, 40 0 ,1.6 mW.
Emitter, Infrared, TO-18, 40°, 2.5 mW .
Emitter, Infrared, TO-18, 40°, 4.0 mW
........ 275
.. ....... 275
...... 275
SFH 404
Emitter, Infrared, TO-18, 60 0 ,
100~p~;.
. 2B3
SFH
SFH
SFH
SFH
Emitter,
Emitter,
Emitter.
Emitter,
1.0
1.6
2.5
4.0
405-1
405-2
405-3
405-4
Infrared,
Infrared,
Infrared,
Infrared,
TO-18,
TO-18,
TO-18,
TO-18,
16°,
160 ,
160 ,
16°,
rnW
mW
mW
mW
.. 361
.. 361
.. ... 342
.
. .......
............
..
. ..
.
. .......
291
291
291
291
SFH 407-1
SFH 407-2
SFH 407-3
Emitter, Infrared, TO-46, .3 mW ...
. .. 285
Emitter, Infrared, TO-46, .63 mW .: ............... 285
Emitter, Infrared. TO-46, 1.0 mW ';~;'"
.. 285
SFH 409
Emitter, Infrared, T1. 30 0 , 7 mW.
279
SFH 500
Photoxtr. TO-1B. 700 MA . '" ............... .
357
111
..... 111
.... 159
... 159
SFH 600-0
SFH 600-1
SFH 600-2
SFH 600-3
Isolator.
Isolator.
Isolator,
Isolator,
8ngJ..
Sngl ..
Sngl.,
8ngl.,
40% Ctr,
63% Ctr.
100% Ctr,
160% Ctr,
2800 V .................
2BOOV.
2800 V . ".\. ,"
..
2800 V
.....
225
225
225
225
.... 63
SFH 60H
SFH 601-2
SFH 601-3
SFH 601-4
Isolator,
Isolator.
Isolator,
Isolator,
Sngl.,
Sngl.,
Sng1.,
Sngl.,
40% Ctr,
63% Ctr,
100% Ctr,
160% Gtr,
5300
5300
5300
5300
SFH 900
Reflection Emitter/Sensor
TP60
TP61
PhotoVoltaic Cell, 1.0 pA ..
PhotoVbltaic Cell, 1.0 pA .
YBG-1000
Display, Yellow, 10 Element Bar Graph. . . .
YL-56
YL-212
VL-44B4
YL-4550
YL-4B50
Lamp,
Lamp,
Lamp,
Lamp.
Lamp,
.. 117
RL-50
RL-50-{)1
RL-50-{)2
RL-54
RL-55
RL-55-5
Lamp,
Lamp.
Lamp,
Lamp,
Lamp.
Lamp,
Red.
Red,
Red,
Red,
Red,
Red,
SUb.
SUb.
SUb.
SUb.
SUb.
SUb.
Min, Water, Clear.
Min, Red, Diffused.
Min, Red, Clear.
Min, .2 'mcd .,.
Min, 2.0 mcd. 20 mA .
Min, 0.8 mcd, 20 mA .
....
..
...
...
.. ..
.
167
167
167
169
170
170
RL-209A
RL-209-1
RL-209-2
RL-2000
RL-4403
Lamp.
Lamp.
Lamp.
Lamp,
Lamp,
Red.
Red.
Red.
Red,
Red,
T1 .. 050" Leads. .5 mcd
T1 ..050" Leads. 1.0 mcd
T1 .. 050" Leads. 2.0 mcd ..
T1%, 1.6 mcd, 20 mAo
T1%, 0.8 mcd, 20 rnA.
...
....
...
...
...
157
157
157
105
105
.. Not recommended for new design-phasing out
14
Yellow,
Yellow,
Yellow.
Yellow,
Yellow,
V.
V
V.
V ..
., 229
............ 229
...229
...229
.............. 261
.. ....... 367
...367
.. 63
Sub Min. Axial..
.
T1, 1.0 mcd, 10 mA ':'
...
T1, No Min. mcd .................
T1 %. 1.0 mcd, 10 rnA .............
T1%. No Min. mCd.
172
161
161
113
113
LED NUMERIC DISPLAYS
Package
Type
Compact
Single
Digit
Encapsulated
(Filled
RefleetorI
Part
Package Outline
[BJ
Number
HD1075R
HD1077R
HD10750
HD10770
HD1075Y
HD1077Y
HD1075G
HD1077G
Cha,actar
Height
7mm
.28"
Luminous Intensity
Description
7 seg_
7 seg.
7 seg.
7 seg.
7 seg.
7 seg.
7 seg.
7 seg.
D.P.
D.P.
D.P.
D.P.
D.P.
D.P.
D.P.
D.P.
Polarity Color
right
right
right
right
right
right
right
right
C.A.
C.C.
C.A.
C.C.
C.A.
C.C.
C.A.
C.C.
7 seg. D.P. right
C.C.
Red
per segment
IF(mAI
Typ Iv
800!,cd
20
Hi. Eft.
Red
1000!,cd
15
Yellow
900I'Cd
15
Green
1000!,cd
15
180ped
10
PAGE
19
r
Compact
Four
Digit
Encapsulated
(Filled
RetlectorI
Compact
Single
Digit
Encapsulated
(Filled
Retleetori
Single
Digit
Encapsulated
(Filled
Refleetor)
Single
Digit
Eneapsulated
(Filled
Refleetori
DL-4770
18. 8.:8. BI
~ IB
~~
'=L
T£
~[B
Red
7mm
.28"
23
DLO-4770
7 seg. D.P. right
HDll05R
HDll06R
HDll07R
HDll08R
HDll050
HDll060
HD11070
HD11080
HD1105Y
HDll06Y
HDll07Y
HD1108Y
HDll05G
HDll06G
HDll07G
HDll08G
DL-7750S
DL-7751S
DL-7756S
DL-7760S
DLO-7650S
DLO-7651S
o LO-7653S
o LO-7656S
DLY-7660S
DLY-7661S
o LY-7663S
o LY-7666S
DLG-7670S
DLG-7671S
DLG-7673S
DLG-7676S
HD1131R
HD1132R
HD1133R
HD1134R
HD11310
HD11320
HD11330
HD11340
HD1,131Y
HD1132Y
HD1133Y
HD1134Y
HD1131G
HD1132G
HD1133G
HD1134G
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
± 1 overflow
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
10mm
.39"
±1 overflow
7 seg. D.P. right
±loverflow
7 seg. D.P. right
±loverflow
7 seg. D.P. right
±1 overflow
7 seg. D.P. left
7 seg. D.P. right
±1 overflow
7
7
7
7
llmm
.43"
13.5
.53"
seg.
seg.
seg.
seg.
D.P.
D.P.
D.P.
D.P.
right
left
right
right
±loverflow
7 seg. D.P. left
7 seg. D.P. right
7 seg. D.P. right
±1 overflow
7seg. D.P. left
7 seg. D.P. right
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
±loverflow
7 seg. D.P. right
+1 overflow
7 seg. D.P. right
±loverflow
7 seg. D.P. right
±loverflow
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
±1 overflow
7 seg. D.P. right
+1 overflow
15
C.C.
Hi. Eff.
Red
400j.lcd
10
Red
1000!,ed
25
Hi. Eff.
Red
1000!,ed
15
C.A.
C.C.
C.A.
C.C.
27
C.A.
Yellow
900!,ed
15
Green
1000!,ed
15
400!,ed
20
1720!,ed
20
C.C.
C.A.
C.C.
C.A.
UNIV.
C.C.
C.A.
C.C.
UNIV.
Red
Hi. Eff.
Red
31
C.A.
C.C.
UNIV.
Yellow
1500!,cd
20
Green
640!,ed
20
Red
1400!,ed
35
Hi. Eff.
Red
1400!,cd
20
C.A.
C.C.
UN IV.
C.A.
C.C.
C.A.
C.C.
35
C.A.
Yellow
1300!,ed
20
Green
1400!,ed
20
C.C.
C.A.
C.C.
I
LED NUMERIC DISPLAYS
Package
Type
Single
Digit
Eneap-
sulated
(Filled
Refleetor)
Charactar
Height
P.rt
Number
Package Outline
E] ~
TI
••
DL-3400
DL-3401
DL-3403
DL-340S
DL-3406
.
20mm
.8"
Description
7 seg_ D_P_ left
7 seg. D.P. left
7 seg. D.P. left
7 seg. D.P. left
±loverflow
DLO-3900
7 seg. D.P. left
DLO-3901
7 seg. D.P. left
20mm
.8"
DLO-3903
7 seg. D.P. left
Polarity
Colo.
Luminous Intensity
per segment
Typly
IF(mA)
Pege
C.A.
C.C.
Red
900l'cd
20
UNIV.
39
C.A.
C.C.
DLO-390S
7 seg. D.P. left
DLO-3906
±loverflow
UNIV.
±loverflow
C.A.
Hi. Eff.
Red
2000l'cd
20
41
*DL-701
B~
.
(.
*DL-702
..
*DL-704
7.6mm
.3"
7 seg. D.P. left
7 seg. D.P. right
*DL-707
7 seg. D.P. left
*DL-707R
7 seg. D.P. right
------:
C.C.
Red
300l'ed
10
43
-
C.A.
41
Single
Digit
Light
Pipe
•I
'7'1
Two
Digit
Light
Pipe
./
T/. I~.
"
.J
ffi]
~"
I'l.
I'J
'-1.,
*DL-746
*DL-747
*DL-749
±loverflow
16mm
.63"
*DL-750
13mm
.51"
*DL-727
*DL-S24
~II~
'l Ll
O/j
Ll. Ll.
*DL-S27
*DL-528
±loverflow
7 seg. D.P. right
*DL-728
Two
Digit
Air Refleetor
±loverflow
7 seg. D.P. left
*DL-721
*DL-722
7 seg. D.P. left
±1 overflow
12.7mm 7 seg. D.P. right
.50"
*DLO-S24
±loverflow
*DLO-527
7 seg. D.P. right
*DLO-528
C.A.
Red
700l'ed
20
45
Red
400l'cd
20
49
Red
400l'cd
20
Hi. Eff.
Red
1200l'cd
20
1S00l'cd
5
C.C.
C.A.
rc:c:---r--c:c.C.A.
C.C.
C.A.
r--c:c.C.C.
C.A.
r--c:c.-
51
~
Multi
Digit
Magnified
Mono-
~
lithic
DL-330M
DL-340M
DL-430M
DL-440M
2.8mm
.11"
3.8mm
.15"
,='.
~
1:=1.
* NOT RECOMMENDED FOR NEW DESIGN PHASING OUT
16
7 seg. 3 Digit
7 seg. 4 Digit
7 seg. 3 Digit
7 seg. 2 Digit
Red
C.C.
MULTIPLEX
53
LED ALPHANUMERIC DISPLAYS
Pack·
aga
Typa'
Char·
.---Single
Char.
Encap·
sulated
(Filled
Reflec·
torI
~
IJ~
'--
I
......
•
t
•
+
0
0
Single
Char.
Hybrid
4 Char.
Magnified
Mono·
lithic
Linear
Displey
par segmant
Typly
IF(mAI
Paga
850l'cd
1000l'cd
25
15
55
MULT. Red
200l'cd
20
61
S x 7 dot matrix
MULT. Red
400J.'Cd
10
57
16 seg., 4 digit
MULT. Red
200l'cd
5
S9
Separ· Red
ately
Hi. Eft.
address· Red
able
anode Yellow
and
Green
CathodE
SOOl'cd
20
25001'cd
20
2000l'cd
20
20001'cd
20
Haight
HD14101R
HD14101G
10mm
.39"
DL-5735
17.5mm 5 x 7 dot matrix
.69"
DL-57
9mm
.35"
DL-416
4mm
.16"
acter
Description
14 .eg. D.P. right
14 seg. D.P. right
Polarity Color
C.A.
Red
Green
+
..
0
0
0
oooco
ococo
0
00000
000000
0
cocco
0
OOC[][] 0
COCOCHI
0
0
0
0
m
...... ~
LED BAR GRAPH DISPLAYS
10 Ele·
ment En·
capsulated
(Filled
Reflector!
Lum inous Intensity
Part
Numbar
Packaga Outlina
-
RBG-l000
10 0000000001
OBG-l000
3.8mm 10 element
.IS"
bar graph
YBG-l000
GBG-l000
17
63
I
18
litronix
HD 1075 R, HD 1077 R
A Siemens Company
RED
HD 10750, HD 10770
HIGH EFFICIENCY RED
HD 1075 V, HD 1077Y
YELLOW
HD 1075 G, HD 1077 G
GREEN
0.28 INCH (7 mm) SEVEN SEGMENT NUMERIC DISPLAY
Package Dimension In Inches (mm)
I-t.0081
I .295
(7.5 ±0.2)
--r~
.236-.Q04
(6,0-0,1,)
58"!:.020
f9.1±Q.5)
.
~
J
..-.l..-
.378"!:.020
(9,6±o,s)
(i~~) -I I-.jIL.o20
(0.5)
:-=-
*
FEATURES
DESCRIPTION
•
Rugged Encapsulated Package
•
0.28 Inch (7 mm) Digit Height
The 0.28 inch (7 mm) Digit Height Series of
HD1075/l0n Seven Segment Displays
offers the choice of common anode or common
cathode with right hand decimal point.
•
Choice of Colors
•
Common Anode or Common Cathode
•
Wide Viewing
•
Intensity Coded for Display Uniformity
These displays have good viewing and can be used in
electronic instruments, point·of·sale systems, clocks, and
other general industrial and consumer applications. All
displays have a light grey face.
Contrast enhancement filters are recommended for use
with all displays.
Specifications are subject to change without notice.
Product
Color
HD1075 R
HD10n R
HD10750
HD10n 0
HD1075 Y
HDtOn Y
HD1075 G
HDtOn G
Red
Red
High Efficiency Red
High Efficiency Red
Yellow
Yellow
Description
Common
Common
Common
Common
Common
Common
Anode Right Decimal
Cathode Right Decimal
Anode Right Decimal
Cathode Right Decimal
Anode Right Decimal
Cathode Right Decimal
Common Anode Right Decimal
Common Cathode Right Decimal
Green
Green
19
I
MAXIMUM RATINGS
Power Dissipation (Per Segment) . • . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . .. 40 mW
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . _35° to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . • . . . . . . • . . . . . . . . . . . -40° to +85"c
D.C. Forward Current per segment
HD1075 R. HD1077 R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . • 20 mA
HD1Q75 O. HD1077 O. HD1075 G. HD1077 G. HD1075 Y. HD1077 Y ......... 15 mA
Peak Forward Current It ~ 10 Its)
HD1075 R. HD1077 R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
HD1075 O. HD1077 O. HD1075 G. HD1077 G. HD1075 Y. HD1077 Y ........ 150 mA
Reverse Voltage ..... . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Thermal Resistance (Junction to Air) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 170 K/W
Soldering Temperature (Less than 5 sec@ min distance of 2 mm) . . . . . . . . . . . . . . . 230°C
Optoelectronic Characteristics @ 25°C
Parameter
Luminous Intensity (Per Segment)
H01075 R, H01077 R
Min
Typ
120
350
800
260
1000
200
900
260
1000
H01075 0, H01077 0
90
H01075 Y, H01077 Y
90
H01075 G, H01077 G
120
Forward Voltage
H01075 R, H01077 R
H01075 0, H01077 O. H01075 G, H01077 G
H01075 Y. H01077 Y
Max
Units
Conditions
,"cd
,"cd
!'Cd
IIcd
!'Cd
!'Cd
!'Cd
!'Cd
IF = 10mA
IF=20mA
IF = 5mA
IF = 15mA
IF = 5mA
IF = 15mA
IF = 5mA
I F =15mA
V
1.6
1.9
1.9
2.0
2.4
2.4
V
IF = 10mA
IF = 5mA
IF = 5mA
Reverse Current
0.01
10
IIA
V R =6V
Peak Emission \/\/avelength
H01075 R. H010n R
H01075 O. H01077 0
H01075 G, H01077 G
H01075 Y. H01077 Y
665
645
560
590
nm
nm
nm
nm
Rise Time/Fell Time
H01075 R, H01077 R
H01075 0, H01077 O. H01075 Y, H01077 Y
H01075 G, H01077 G
5
100
50
ns
ns
ns
Capacitance
H01075
H01075
H01075
H01075
40
12
45
10
pf
pf
pf
pf
R, H01077 R
0, H01077 0
G. H01077 G
Y. H01077 Y
20
V R = 0v
V R =OV
V R =OV
V R = 0v
f
f
f
f
= lMHz
=lMHz
=lMHz
= lMHz
.
A
Fl~/·
•8
10
i
E/:le
.
•8
7
4
2
• •
.. .. ..
1
DP
3
5
TOP VIEW
HD1075
PIN
1
2
3
4
5
6
7
B
9
10
FUNCTION
CATHODE SEGMENT E
CATHODE SEGMENT D
COMMON ANODE
CATHODE SEGMENT C
CATHODE DECIMAL POINT
CATHODE SEGMENT B
CATHODE SEGMENT A
COMMON ANODE
CATHODE SEGMENT G
CATHODE SEGMENT F
HD1077
PIN
1
2
3
4
5
6
7
B
9
10
FUNCTION
ANODE SEGMENT E
ANODE SEGMENT D
COMMON CATHODE
ANODE SEGMENT C
ANODE DECIMAL POINT
ANODE SEGMENT B
ANODE SEGMENT A
COMMON CATHODE
ANODE SEGMENT G
ANODE SEGMENT F
21
I
RADIATION CHARACTERISTICS
RELATIVE SPECTRAL EMISSION
Irel .. fly)
20
%
120,--,---,-----,--,--,---r----;--,
40
60
80
560
100°
580
600
620
640
·660
-A
LUMINOUS INTENSITY
FORWARD VOLTAGE
LUMINOUS INTENSITY
I,' {IV,)
I, = f (ld
mA
-I_1,_ .. !IT.mb )
~
%
red.gold
10'
~
f'..
1,
I,
I
,
I
j
10
If-'
R1
10'
III
II
10
,
y
L.... Vy
"
~
I':
~ I.........
1,,\
~
40
I'.
~
20
'(Ify
10 '
10
1,0
.1
I
l
1,2 1,4 1,6 1,8 2.0 2,2 21- 2,6 2,8 3,0 3,2 3,4 3,6 V
100 rnA
10
FORWARD VOLTAGE
50
~ak = {(Tamb '
NM
orange, green
10'
690
l--""
R
r-
II
G.-;~
l..f
pej":::
~ I-"""
X
650
640
-
I-"""
680
R
/
100
WAVELENGTH AT PEAK EMISSION
IF ""!IV F )
mA
O,Y,G
75
°c
FORWARD VOLTAGE
~=f(T
)
V
"C
8mb
F25
%
120
25
--V,
-l,
I-
~,y,G
60
II
III
G
0,1
H,·C
o ....... !--':' l -
....... ....... !-- ~
630
60
620
l11 .tG
610
/
40
600
10'
y
590
r-
.,:
580
20
:
10 '
25
50
75
100
O(
570
:
560
550
\4 1,6 1,8 2.0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 V
--_V,
22
:t G
r-o
25
-- -~
50
75
- Tamb
100·(
DL·4770
RED
DLO·4770
litronix
A Siemens Company
HIGH EFFICIENCY RED
7·SEGMENT 4-DIGIT DISPLAY
Package Dimensions In Inches (mm)
10° TYP
.17
'(4.3)
B.
I
'I
u._.....,,...!:.~~~..£.::;;::;;==j"DATE CODE
sa. ~NS 13 PLCS
Pin Location & Function
.55
'(14) ,
.30
.10
.10.30 .40 .55
(7.6) (2.54) (2.54) (7.6)(10.2) (14)
.00
.10
(2.54)-+-1----
'O\JOO~~==!~~
.05
(1.27)-':
.10
(2.54)
Top View
Maximum Ratings@25°C
FEATURES
• 0.28 Inch (7 mm) Digit Height
•
Rugged Encapsulated Package
•
Filled Reflector Construction
•
End Stackable Module
•
Intensity Coded for Display
Uniformity
•
Right Hand Decimal
•
Colon Included for Clock
Applications
DESCRIPTION
The DL-DL0-4770 is a 0.28 inch (7 mm)
four-digit display in a 0.39 x 1.26 inch
(10 mm x 32 mm) package. The units are
end stackable and offer a colon for timekeeping and other operations. The DL/DLO4770 is designed to serve a wide variety of
industrial and consumer applications requiring medium-sized digits in a very small
package.
Pin
1
2
3
4
5
6
7
8
9'
10
11
12
13
function
Digit 1 Cathode
Segment B Anode.
Segment C Anode
Digit 2 and Lower
Colon Cathode
Segment A Anode
Segment D Anode
Decima) Point
Anode
Digit 3 and Upper
Colon Cathode
Colon Anode
Segment F Anode
Segment E Anode
Segment G Anode
Digit 4 Cathode
Power Dissipation (package) . . . . . . . . . . . . . . . . . 820 mW
Derate Linearly from 25°C . . . . . . . . • . . . . . . -13.7 mWfC
Storage Temperature . . . . . . . . . . . . . . . . , . _20°C to +85°C
Operating Temperature ... , . . • . . . . . . • . . _20°C to +85°C
Continuous Forward Current
DL4770 (per segment) . . . . . . . . . . . . . . . . • . . 30 mA
DL4770 (all segments lit) . . . . . • , . . . . , ...• 12 mA/seg
DL04770 (per segment) . . . . • . . . . . . . . . . . . . 25 mA
DL04770 (all segments lit) . . . . . . . . . . . . • . . 10 mA/seg
Peak Inverse Voltage
DL4770 . . . . . . . . . . . . . . . . . . . . • . . . . . , . . . 3 V
DL04770 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
·e)
Opta-Electronlc Characteristics Per Segment (@ 25
Te.t
Parameter
Min Typ Max Unit Condition
Luminous Intensity/Segment
(Digit Average)
OL
.08 .18
mcd IF =10 mA
.25 .40
OLO
mcd IF =10 mA
Forward Voltage
OL
2.0
V IF =20 mA
OLO
2.8
V IF =20 mA
Reverse Current
OL
100 pA
VR =3 V
DLO
100 pA
VR =3 V
Peak Emission Wavelength
OL
nm
880
nm
OLO
830
Specifications subject to change without notice.
23
I
24
DL-7730 Series
litronix
RED
A Siemens Company
DLO-7610 Series
HIGH EFFICIENCY RED
0.3 INCH SEVEN SEGMENT NUMERIC DISPLAY
PRELIMINARY
Phvsical Dimensions (inches)
FEATURES
•
•
•
•
•
•
•
•
•
DESCRIPTION
The DL-7730 and DLQ-7610 Series are 0.3 inch
(7.62 mm) Red and High Efficiency Red LED displays.
Both series offer a choice of either common anode or
common cathode versions, right or left decimal point
as well as a polarity and overflow indicator.
Rugged Encapsulated Package
Filled Reflector Construction
Choice of Red or High Efficiency Red
Choice of Common Anode (Left or Right D.P.)
Common Cathode
Sharp Clear 0.3 inch (7.62 mm) Character
Wide Viewing Angle
Good "Off" Segment Contrast
Intensity Coded for Display Uniformity
Standard 0.3 inch Dual-Inllne-Package Leads
on 0.1 centers
These displays were designed for viewing distances of
up to 10 feet and can be used in instruments, point-ofsale systems, clocks, and other general industrial and
consumer applications.
The DL-7734 and DLO-7614 are pin for pin compatible
with the DL-304 and DL-704.
These displays are painted to match the appearance of
an unlit segment in order to maximize contrast enhancement. Contrast enhancement filters are recommended for use with all displays.
Part Number
DLO·7610
DLO·7611
DLO·7613
DLO·7614
DL·7730
DL·7731
DL·7734
DL·7740
Color
Description
High Efficiency Red
High Efficiency Red
High Efficiency Red
High Efficiency Red
Standard Red
Standard Red
Standard Red
Standard Red
Common Anode Left Hand Decimal
Common Anode Right Hand Decimal
Common Cathode Right Hand Decimal
Common Cathode Right Hand Decimal
Common Anode Left Hand Decimal
Common Anode Right Hand Deeimal
Common Cathode Right Hand Decimal
Common Cathode Right Hand Decimal
25
(14 pin pkg)
(14 pin pkg)
(10 pin pkg)
(14 pin pkg)
(14 pin pkg)
(14 pin pkg)
(14 pin pkg)
(10 pin pkg)
Specifications subject to change
without notice.
I
-ie1D/-7730
-7813/-7740
14
,El.
13
4
5
l~
.'~
12
11
10
DL-7730 and DLO-7610 Series
10
9
FUNCTION
PIN
1
2
3
••
•
,.•
7
TOP"IEW
TOP VIEW
7
-7811/-7814/-7731/.-7734
8
14
~
J.
-,-,C
-.
., G
D
OF
11
12
13
13
12
"
11
-7811
-7731
·7810
·7730
CATHODE A
.cATHODE F
ANODE
NO PIN
NOPIN
CATHODE DP
CATHODE E
CATHODE D
NO CONN.
CATHODEC
CATHODE G
NOPIN
CATHODE B
ANODE
CATHODE A
CATHODE F
ANODE
NO PIN
NOPIN
NOCONN.
CATHODE E
CATHODE D
CATHODE OP
CATHODEC
CATHODE G
NO PIN
CATHODE B
ANODE
PIN
1
.2
.3
•
5
•
7
8
9
,.
,.
-7814
-7734
-7613
-7740
CATHODE
ANODE F
ANODE G
ANODE E
ANODE 0
CATHODE
ANODE DP
ANODEC
ANODE B
ANODEA
11
12
13·
ANODE F
ANODE G
NOPIN
CATHODE
NOPIN
ANODE E
ANODE 0
ANODEC
ANODE DP
NOPIN
NOPIN
CATHODE
ANODE B
ANODE A
10
9
8
MAXIMUM RATINGS
TOP VIEW
High Efficiency
Standard Red
Red
Power Dissipation per Segment
or D.P. @ 2SoC ., ••••••••.••.••••••••..•.••••.•.••••.•••.••.•••.• 42 mW
50 mW
Derating Factor from SOo C. • • • • • . • • • • • • • • • • • . • • • • • • • • • • • • • • • • • . . .. .43 mArC
.4 mArC
Storage Temperature ••••.•••••..•.•••••.••.•••.•..•..•••••.•••...••••••. _20° to +85°C
Operating Temperature .................................................. _20° to +85°C
Peak Forward Current
perSegmentorD.P ............................................... 150mA
60mA
Continuous Forward Current
per Segment or D.P ••••••.••.••••.•...••..•....•••••••.••••••••••• 25 mA
20 mA
Peak I nverse Vol tage
per Segment or D.P ••••• , •. •. • • • • • . ••• • • • • • • • • • • • • •• • • • . . • . . . • • • • • • • • • • • 6.0 V
Lead Soldering Temperature ••••••••.••..•.••••• , •.•••.•••••••••••..••• 260°C for 3 Seconds
(1116 inch below seating plane)
ELECTRICAL/OPTICAL CHARACTERISTICS AT TA = 2SoC
STANDARD RED DL·7730/7731/7734/7736/7740
Parameter
Luminous IntensitylSegment
(Digit Average) .
Peak Wavelength
Symbol
Test Condition
Iv
Ip•• k= 100 mA
10% Duty Cycle
Iv
If = 20 mA
Min.
Typ.
100
350
Max.
200
h peak
Units
/lcd
nm
655
Forward VoltagelSegment or D.P.
Vf
If=20mA
1.6
2.0
V
Reverse Current/Segment or D.P.
IR
VR =6V
10
100
/lA
Response Time
Temperature Coefficient of VflSegment or D.P.
tptf
10
ns
t.vfrC
-2.0
mVrC
HIGH EFFICIENCY.RED DLO-7610/7611/7613/7614/7616
Parameter
Luminous IntensitylSegment
(Digit Average)
Peak Wavelength
Forward VoltagelSegment or D.P.
Reverse Current/Segmant or D.P.
Response Time
Temperature Coefficient of Vf'Segment or D.P.
Symbol
Iv
Test Condition
Min.
Typ.
SmA D.C.
70
250
20mA D.C.
1430
60 mA Pk: 10f
6 Duty Factor
810
h peak
Vf
IR
Max.
/led
nm
635
If= S mA
1.7
If = 20 mA
2.0
If =60mA
2.8
V R =6V
10
Units
2.5
V
/lA
tr,tf
90
ns
AVfrC
-2.0
mvrc
26
litronix
A Siemens Company
HD 1105 R, HD 1106 R, HD 1107 R, HD 1108 R
RED
HD 11050, HD 1106 0, HD 11070, HD 1108
HIGH EFFICIENDY RED
°
HD 1105 Y, HD 1106 Y, HD 1107 Y, HD 1108 Y
YELLOW
HD 1105 G, HD 1106 G, HD 1107 G, HD 1108 G
GR[,~N
0.39 INCH (10 mm) SEVEN SEGMENT NUMERIC DISPLAY
Package Dimensions in Inches (mm)
r-
.386'.0081
(9.8 ± .2)
.278 ± .006 ~
~1421'020
f10.7 ± .5)
W
' IrQ""'''rl= "':,
z
~IIg LE~
\'
,IR
(6.0 ±.05)
1
r--
0.'
_I
(1.62) \
FEATURES
DESCR IPTION
•
The 0.39 inch (10 mml Digit Height Series of
HD1105/1107 Seven Segment Displays offers the
choice of common anode or common cathode with
right hand decimal point.
Rugged Encapsulated Package
•
Large 0.39 Inch (10 mml Digit Height
•
•
•
•
Choice of Colors
Common Anode or Common Cathode
Wide Viewing
Intensity Coded for Display Uniformity
• ±1 Polarity Overflow
The HD 11 06/11 08 overflow displays also offer the
choice of common anode or common cathode
versions with right hand decimal point.
These displays were designed for viewing distances
of up to 10 feet and can be used in electronic
instruments, point-of-sale systems, clocks, and other
general industrial and consumer applications. All
displays have a light grey face.
Contrast enhancement filtered are recommended for
use with all displays.
Specifications subject to change without notice.
27
I
MAXIMUM RATINGS
Power Dissipation Per Segment (Tamb = 45°C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mW
Operating Temperature.' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _35° to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _40° to +85°C
D.C. Forward Current Per Segment (Tamb = 45°C)
HDll05R, HDll06R, HDll07R, HD1108R . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
HD11050, HDll060, HD11070, HD11080 . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5 mA
HD1105G, HDll06G, HDll07G, HD1108G . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5 mA
HDll05Y, HD1106Y, HD1107Y, HDll08Y . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5 mA
Peak Forward Current It..;; 10 j.lS, Tamb =45"c)
HD1105R, HD1106R, HD1107R, HDll08R . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
HD11050, HDll060, HD11070, HD11080 . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA
H01105G, H01106G, H01107G, HOll08G . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA
HD1105Y, HOll06Y, HOll07Y, H01108Y . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Thermal Resistance (Junction to Air)
HOll05/HOll07 series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 K/W
H01106/H01108 series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 K/W
Soldering Temperature (Less than 5 sec @ min distance of 2 mm) . . . . . . . . . . . . . . . . . 230°C
Optoelectronic Characteristics @ 250C
Parameter
Luminous Intensity (Per Segment)
HOll05R, HOll06R, HOll07R, H01108R
Min
Typ
120
350
1000
260
1000
260
1000
200
900
HOll050, HOll060, HOll070, HOll080
90
H011 05G, HOll 06G, HOll 07G. HOll 08G
120
HOll05Y, H01106Y., H01107Y, H01108Y
90
Forward Voltage
H01105R, H01106R,
HOll050, HOll060,
HOll05G, H01106G,
HOll05Y, HOll06Y,
H01107R,
H011070,
H01107G,
H01107Y,
HOll08R
H011080
H01108G
HOll08Y
Reverse Current
Max
Conditions
Units
j.led
j.led
j.lCd
j.led
j.led
j.led
j.led
j.lCd
IF=10mA
IF=25mA
IF =5 mA
IF=15mA
IF =5 mA
IF=15mA
IF =5 mA
IF = 15mA
1.6
1.9
1.9
1.9
2.0
2.4
2.4
2.4
V
V
V
V
IF
IF
IF
IF
0.01
10
j.lA
VR =6V
Peak Emission Wavelength
H01105R, H01106R, HOll07R,
H011050, H011060, H011070,
HOll05G, H01106G, H01107G,
HOll05Y, H01106Y, H01107Y,
HOll08R
H011080
HOll08G
H01108Y
665
645
560
590
nm
nm
nm
nm
Rise Time/Fall
HOll05R,
H011050,
HOll05G,
HOll05Y,
Time
H01106R,
H011060,
HOll06G,
H01106Y,
H01107R,
H011070,
HOll07G,
H01107Y,
HOll08R
H011080
H01108G
HOll08Y
5
100
50
100
ns
ns
ns
ns
H01106R,
H011060,
H01106G,
HOll06Y,
H01107R,
HOll070,
H01107G,
H01107Y,
H01108R
HOll080
HOll08G
H01108Y
40
12
45
10
pf
pf
pi
pf
= 10mA
=5mA
= 5mA
= 5mA
Capacitance
HOll05R,
HOll050,
HOll05G,
H01105Y,
Specifications subject to change without notice.
28
VR
VR
VR
VR
= Ov f = 1 MHz
=OVI= lMHz
=OVf= lMHz
=OVf= lMHz
Product
Color
HDll05R
HDll06R
HDll07R
HDll08R
HDll050
HDll060
HDll070
HDll080
HDll05G
HDll06G
HDll07G
HDll08G
HDll05Y
HDll06Y
HDll07Y
HDll08Y
High
High
High
High
Description
Red
Red
Red
Red
Efficiency
Efficiency
Efficiency
Efficiency
Green
Green
Green
Green
Yellow
Yellow
Yellow
Yellow
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Common
Red
Red
Red
Red
HD 1106/1108
HD 1105/1107
1 I
3I
4I
5I
::n::
10
i ,:
2I
'"
•
B
0,.
9
::I. 1:::
8
E
I7
....
!I 6
5 1 ' " !16
Top View
1
2
3
HD
HD
HD
HD
1l06R
11060
1l06G
1l06Y
4
5
6
7
8
9
10
1
2
3
HD
HD
HD
HD
1108 R
11080
1108G
1108 Y
4
5
6
7
8
9
10
Anode Right Decimal
Anode ±1 Right Decimal
Cathode Right Decirnal
Cathode ±1 Right Decimal
Anode Right Decimal
Anode ±1 Right Decimal
Cathode Right Decimal
Cathode ±1 Right Decimal
Anode Right Decimal
Anode ±1 Right Decimal
Cathode Right Decimal
Cathode ±1 Right Decimal
Anode Right Decimal
Anode ±1 Right Decimal
Cathode Right Decimal
Cathode ±1 Right Decimal
Top View
1
2
3
Cathode DO
Anode DO
Cathode C
Cathode Du
Anode C.Du
Cathode DP
Cathode B
Anode A.B.DP
Cathode A
Anode A.B.DP
HD 1105 R
HDllOSO
HDllOS G
HD 1105 Y
4
5
6
7
8
9
10
1
2
3
Anode DO
Cathode DO
Anode C
Anode Du
Cathode C.Du
Anode DP
Anode B
Cathode A.B.DP
Anode A
Cathode A.B.DP
HD
HD
HD
HD
1107 R
11070
1l07G
"07Y
4
5
6
7
8
9
10
29
Cathode G
Cathode F
Common Anode
Cathode E
Cathode 0
Cathode DP
Cathode C
Common Anode
Cathode B
Cathode A
Anode G
Anode F
Common Cathode
Anode E
Anode 0
Cathode DP
Cathode C
Common Cathode
Anode B
Anode A
I
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
RELATIVE SPECTRAL EMISSION
RADIATION CHARACTERISTICS
%
120
r--,.---r--,---,-----r--r--r----r
--A
LUMINOUS INTENSITY
LUMINOUS INTENSITY
lO'mmm.
WAVELENGTH AT PEAK EMISSION
1, = 'II,)
I,
120
690
~
~
r:ffiI
680
~
" I"
~ r-..
10
60
'
'
'
.
'T::: -
1'\
"'\
630
620
610
600
580
20
570
560
550
25
100 mA
50
75
--Tamb
--T,
FORWARD VOLTAGE
%
120
FORWARD VOLTAGE
mA
r--r-r-,-,.--,--r-,.--,
100
- '-- G _
o
25
!-
50
O(
10'
7S
IOOO(
--Tomb
FORWARD VOLTAGE
IF "'!lVFl
red, yellow
,..-!-
0
l- i--
640
590
10
...... r--
I.....- r--
~y,G
1
R_
%
I""
IF
~ [NFl
orange, green
mA
10'
V,
V F250
100
I
I,
~
I
==
/
o,v,G
80
v:;
/
10
"1
,
,
G
<
0
60
10'
40
I
I
lfo
20
I
25
50
--Tamb
100
__ v,
1,2 1,4 1,6 1,8 2,02,22,42,62,83,03,23,4 3,6 V
O(
30
1,4 1,6 1,8
2p
2,2 2,42,62,8
3p
3,23,43,63,8 V
_ _ _ v,
litronix
A Siemens Company
DL·7750S SERIES DLO·7650S SERIES
HIGH EFFICIENCY RED
RED
DLY·7660S SERIES DLG·7670S SERIES
YELLOW
GREEN
0.43 INCH SEVEN SEGMENT NUMERIC DISPLAY
PRELIMINARY
designed for use in instruments, point-of-sale systems,
clocks, and other general industrial & consumer
applications.
FEATURES
• Rugged Encapsulated I Filled Reflector Construction}
• Choice of Colors (Including High Intensity Red)
as well as Common Anode (D. P. Left& Right),
Common Cathode and Universal Polarity Overflow
• Sharp, Clear .43 Inch Character for Viewing up to
20 Feet
• Intensity Coded for Matching Uniformity
• Standard 14 Pin,.3 Inch Pin Spacing, Dual-In-Line
Package
Part Number Color
Description
DL-7750S
DL-7751 S
DL-7756S
DL-7760S
Standard Red
DLO-7650S
DLO-7651 S
DLO-7653 S
DLO-7656S
High Efficiency Red C.A. 7 Segment. D.P. Left
"
C.A. 7 Segment. D.P. Right
C.C. 7 Segment. D.P. Right
Univ. ± 1 Polarity Overflow
Yellow
DESCRIPTION
DLY-7660S
DLY-7661 S
DLY-7663S
DLY-7666S
The DL-77505, -76505, -76605, -76705 series are large
0.43 inch (10.92 mm) Red; Hi-efficiency Red, Yellow,
and Green seven segment displays. These displays are
DLG-7670S
DLG-7671 S
DLG-7673S
DLG-7676S
Green
31
"
"
"
C.A. 7 Segment. D.P. Left
C.A. 7 Segment. D.P. Right
Univ. ± 1 Polarity Overflow
C.C. 7 Segment. D.P. Right
C.A.7 Segment. D.P. Left
C.A. 7 Segment D.P. Right
C.C. 7 Segment. D.P. Right
Univ. ± 1 Polarity Overflow
C.A. 7 Segment. D.P. Left
C.A. 7 Segment. D.P. Right
C.C. 7 Segment. D.P. Right
Univ. ±1 Polarity Overflow
I
=
ELECTRICAL/OPTICAL CHARACTERISTICS AT TA 25°C
STANDARD RED DL·7750SJ7751S17758S17780S
Parameter
Symbol
Luminous Intensity/Segment
Peak Wavelength
Dominant Wavelength
Forward Voltage/Segment or D.P.
Reverse Current/Segment or D.P.
Rise and Fall Time
Iv
Iv
lIpeak
lid
V,
IR
t f , t,
Te.t Condition
1,=10 mA
1,=25 mA
Min.
120
Typ.
1000
665
645
1.6
0.01
5
1,= 10 mA
VR=6V
Max.
350
2.0
10
Units
"cd
"cd
nm
nm
V
"A
ns
HIGH EFFICIENCY RED DL()'765OS17651S17653S17658S
Parameter
Symbol
Luminous Intensity/Segment
Iv
Peak Wavelength
Dominant Wavelength
Forward Voltage/Segment or D.P.
Reverse Current/Segment or D.P.
Rise and Fall Time
lIpeak
lid
V,
IR
t f , t,
Teat Condition
1,=5 mA
1,=15 mA
Min
90
1,=5mA
VR=6V
Typ
260
1000
645
638
1.9
0;01
100
Max
Typ.
200
Max.
2.4
10
Units
"cd
"cd
nm
nm
V
"A
ns
YELLOW DLY·7680Sl7661 Sl7663S17666S
Parameter
Symbol
Luminous Intensity/Segment
Iv
Peak Wavelength
Dominant Wavelength
Forward Voltage/Segment or D.P:
Reverse Current/Segment or D.P.
Rise and Fall Time
lIpeak
lid
V,
IR
t,t
Test Condition
1,=5mA
1,=15 mA
Min.
90
900
590
592
1.9
0.01
100
1,=5mA
VR=6V
2.4
10
Units
"cd
"cd
nm
nm
V
"A
ns
GREEN DLG·7670Sl7671S17673S17676S
Parametar
Luminlous Intensity/Segment
Peak Wavelength
Dominant Wavelength
Forward VOltage/Segment or D.P.
Reverse Current/Segment or D.P.
Rise and Fall Time
Symbol
Iv
lIpeak
lid
V,
IR
t" t,
Specifications subject to change without notice.
32
Test Condition
1,=5 mA D.C.
I, = 15 mA D.C.
1,=5mA
VR-6V
Min
120
Typ
260
1000
560
561
1.9
0.01
50
Max
2.4
10
Units
"cd
"cd
nm
nm
V
"A
ns
Maximum Ratings
I
Standard
All
Red
Others
50mW
-40 to +85°C
-35 to +85°C
Power Dissipation per Segment or D.P. @ 25°C
Storage Temperature
Operating Temperature
Peak Forward Current per Segment or D.P.
(t ::s10l'sec)
Continuous Forward Current per Segment or D.P.
Peak Inverse Voltage per Segment or D.P.
lead Soldering Temperature
400 mA
150 mA
25 mA
17.5 mA
6.0V
230°C for 3 seconds
Package Dimensions in Inches (mm)
o L·7750/775117760
OLG-7670/767117673
OL V·7660/766117663
OLD·76501765117653
OL·7756/0LG-7676/DLO-7656/0L V-7666
r[E1
040
040(1.02)
.020
11$1;101
-lI
II--
~
I
--L-
j
.600
750",010
(15.24)
(19.05±25)
3~1 rI~I
(8.1) MAX
rw-;r;:-,oo
(10,;~~IN
.500 MAX.
(12.7) MAX
:fL
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Function
Cathode -a
Cethode ·f
Anode
No Pin
No Pin
Cathode -d.p.
cathode -0
CathOde -d
No Conn.
Cethode -c
Cathode -g
No Pin
Cathode -b
Anode
13
A
1
~
L319J
A.H.P.D
MAX
(8.1) MAX
1
~I i02'5~-+-30;
5
(6.25<:15)
(10.2)MJN.
0
--j
~
.SOD.r
112 .7)
-1..R+';'~
T
400
,..:
:,0,: I."
15)
r-17 621
7
TOP VIEW
o LO-7650/oLY-7660 OLO·7651/0LY-7661
OLG·7670/0L·7750
OLG·7671/0L·7751
Pin
1
,.
-/11-- i~~~
(7.62)
LH.O,PI_
l
I
.300
T
750;:010
(19.05;:025)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Function
Cathode -a
Cathode ·f
Anode
No Pin
No Pin
No Conn.
Cathode -e
CathOde -d
Cathode -d.p.
CathOde -c
Cathode -g
No Pin
Cathode -b
Anode
All untoleranced dimensions are for reference only.
O·LO·7653/0LY-7663
OLG-76'73/0L-7760
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Function
Anode ..
Anode -f
Cathode
No Pin
No Pin
No Conn.
Anode -e
Anode -d
Anode -d.p.
Anode -c
Anode -9
No Pin
Anode -b
Cathode
33
·
0' /.:
.,";;-}..
··
,
1
1
1
1
1
TOP VIEW
DL·7756/DLG·7676/DLO·7656/DL Y·7666
Pin
Function
Pin Function
1
2
3
4
5
6
7
Cathode -d
8
Anode -d.p.
Anode-d
No Pin
Cathode -c
Cathode -e
Anode -e
Anode -c
9
Cathode -d.p.
10
11
12
13
14
Cathode -b
Cathode -a
No Pin
Anode -a
Anode -b
V,
ForwardVoltage VF25 4 ='(Tamb )
%
pcd LumlnOUllntenalty Iv:: f(I F)
10'
Forward Current IF = f(VF)
mA
10'
12'
U,
UF1S•
1.
b
,
1 ~-:--r'--i--T-r
!
Forward Current IF = I(VF)
red, yellow
'00
SO
f--"----r,---t---t---t---t-l
60
f-+----'--+
'1
,
,
f-1
/
I
r
t-C
-1
I
I
10'
20
,,-,
100
°e
\2 1,4 1,6 1,.8 Zp 2,Z 2/0 21> 2~ 3P :u 3,4 3,6 II
--v,
--v,
Power Dissipation and Pulse Current
Wavelength at Peak Emission
Luminous Intenslly
~aak=!(Ta)
.,
0/0
~
:: f(l amb)
%
125
IV25
12'
69'
~=f (Ta)
P=! (Tv) vs.
Ip45
1.
Till
! 100
AT:: i--r-C;j.,¥'+'"9"'-t-...,
I
6" FJ--+-+-+--t---j-- +--1
6"
50
I---~--~--""'"
\
60
15
62'
61'
60'
59'
5'
40
b ....-t'""'F--t---t---t--j
5SO
570
560
550 0
25
25
% Relative Spectral Emission Irel
120
Ire 100
!
1-
,
R
50
75
100
--lamb
II
,,
°e
SO
11 ,
tOOOe
--T.
Radiation Characteristics I'el -= I (IP)
-= f (11)
.29
l
1--"'--"'""
80
~
25
20
b .....f'"'"'F-+-
25
1\
1---_+---+--+---;--0
0
1r
I
1;1
t
I
40
,
~
__
~
m
w
~
~
_m
20
-- A
34
40
60
80
100
0
litronix
A Siemens Company
HD 1131 R, HD 1132 R, HD 1133 R, HD 1134 R
RED
HD 1131 0, HD 1132 0, HD 1133 0, HD 1134
HIGH EFFICIENCY RED
°
HD 1131 Y, HD 1132 Y, HD 1133 Y, HD 1134 Y
YELLOW
HD 1131 G, HD 1132 G, HD 1133 G, HD 1134 G
GREEN
0.53 (13.5 mm) SEVEN SEGMENT NUMERIC DISPLAY
Package Dimensions in Inches (mm)
.Til' . Tr-~l
-L a1----.J~~~.It.Ol1
",009
~ .488 ± .006 ---..\
I
I
.600
(S.05±.lSI
I
(I2.4D±.15)
(O.~O)
Typical
.278Lo"'Q
{1.0!.iL15!
40h.Ol
(10.25±.25)~
___
_
~---T~Plcal
l=} .
_m_~' ~
(o.501~r02.0
100
(2,54) Tvp
400
00,16)
FEATURES
DESCRIPTION
•
The 0.53 inch (13.S mm) Digit Height Series of
HDl131/1133 Seven Segment Displays offers the choice
of common anode or common cathode versions with
right hand decimal point.
Rugged Encapsulated Package
•
Large 0.S3 Inch (13.S mm) Digit Height
•
Choice of Colors
•
Common Anode or Common Cathode
•
Wide Viewing
•
Intensity Coded for Display Uniformity
• ± 1 Polarity Overflow
•
Pin for Pin Compatibility with DLSOO/DLS07,
FNDSOO/FNDS07, MAN6680/MAN6660,
TI L322/TI L321
The HD1132/1134 overflow displays also offer the
choice of common anode or common cathode versions
with right hand decimal point.
These displays were designed for viewing distances of
up to 20 feet and can be used in electronic instruments,
point-of-sale systems, clocks, and other general industrial
and consumer applications. All displays have a light
grey face.
Contrast enhancement filters are recommended for use
with all displays.
Specifications subject to change without notice.
35
I
MAXIMUM RATINGS
Power Dissipation Per Segment (T amb = 45°C). . . . . . . . . . . . . . . . . . . . . . . . . .. 60 mW
Operating Temperature . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . _35° to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .' _40° to +85°C
D.C. Forward Current Per Segment (T amb = 45°C)
HDl131 R, HDl132R, HDl133R, HDl134R . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 mA
HDl131O, HDl1320, HDl1330, HDl1340 . . . • . . . . . . . . . . . . . . . . . . . . . . . 20 mA
HDl131G, HDl132G', HDl133G, HDl134G . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
HDl131Y, HDl132Y, HDl133Y, HDl134Y . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Forward Current (t';; 10 tls, Tamb = 45°C)
HDl131 R, HDl132R, HD1133R, HDl134R . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
HDl131O, HDl1320, HDl1330, HDl1340 . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA
HDl131G,HDl132G,HDl133G,HDl134G . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
HDl131Y, HDl132Y, HDl133Y, HDl134Y . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . 6 V
Thermal Resistance (Junction to Air)
,
HDl131/HDl133 series . . . . . . . ; . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 KIW
HDl132/HD1134 series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 KIW
Soldering Temperature (Less than 5 sec @ min distance of 2 mm) . . . . . . . . . . . . . . . 230°C
Optoelectronic Characteristics
@
25°C
Parameter
Luminous Intensity (Per Segment)
Hbl131R, HDl132R, HDl133R, HDl134R
Min
Typ
120
300
1400
260
1400
260
1400
200
1300
HDl1310, HDl1320, HDl1330, HDl1340
90
HDl131G, HDl132G, HDl133G, HDl134G
120
HDl131Y, HDl132Y, HDl133Y, HDl134Y
90
Forward Voltage
HDl131R, HDl132R, HDl133R, HDl134R
HDl1310, HDl1320, HD11339, HDl1340
HDl131G, HDl132G, HDl133G, HDl134G
HDl131Y, HDl132Y, HDl133Y, HDl134Y
Max
Units
/tcd
/tcd
/tcd
/tcd
/tcd
/tcd
/tcd
/tcd
1.6
1.9
1.9
1.9
2.0
2.4
2.4
2.4
V
V
V
V
10
ItA
Reverse Current
0.01
Peak Emission Wavelength
HDl131R, HDl132R, HDl133R, HDl134R
HD11310, HDl1320, HDl1330, HD11340
HDl131G, HDl132G, HDl133G, HDl134G
HDl131Y, HDl132Y, HDl133Y, HDl134Y
665
645
560
590
nm
nm
nm
nm
Rise Time/Fall Time
HDl131R, HDl132R, HDl133R, HD1134R
HD11310, HDl1320, HDl1330, HDl1340
HDl131G, HDl132G, HDl133G, HDl134G
HDl131Y, HDl132Y, HDl133Y, HDl134Y
5
100
50
100
ns
ns
ns
ns
40
12
45
10
pi
pi
pf
pf
Conditions
IF = 10 mA
I F =35mA
IF = 5mA
I F =20mA
IF = 5 mA
I F =20mA
IF = 5 mA
IF =20 mA
IF
IF
IF
IF
=
=
=
=
10 mA
5 mA
5mA
5mA
V R =6 V
Capacitance
HD1131R, HDl132R, HD1133R, HDl134R
HDl131O, HDl1320, HDl1330, HDl1340
HDl131G, HD1132G, HD1133G, HD1134G
HDl131Y, HD1132Y, HD1133Y, HD1134Y
Specifications subject to change without notice.
36
V R =OV
V R = 0v
V R =OV
V R =OV
f
f
f
f
=lMHz
= 1MHz
=lMHz
=lMHz
Product
HDl131R
HDl132R
HDl133R
HDll34R
HDl1310
HD11320
HDl1330
HDll340
HDl131G
HDl132G
HDl133G
HDll34G
HDl131Y
HD1132Y
HD1133Y
HD1134Y
Color
High
High
High
High
Red
Red
Red
Red
Efficiency
Efficiency
Efficiency
Efficiency
Green
Green
Green
Green
Yellow
Yellow
Yellow
Yellow
Description
Common Anode Right Decimal
Common Anode ±1 Right Decimal
Common Cathode Right Decimal
Common Cathode ±1 Right Decimal
Common Anode Right Decimal
Common Anode ±1 Right Decimal
Common Cathode Right Decimal
Common Cathode ±1 Right Decimal
Common Anode Right Decimal
Common Anode ±1 Right Decimal
Common Cathode Right Decimal
Common Cathode ±1 Right Decimal
Common Anode Right Decimal
Common Anode ±1 Right Decimal
Common Cathode Right Decimal
Common Cathode ±1 Right Decimal
Red
Red
Red
Red
,
HD 1131/1133
HD 1132/1134
10
D
J_..
G-l.
9
1:1
_
K.
10
a
l:1li
9
B
c
1:1
D
2
__
3
CI
4
2
TOP VIEW
Cathode G
1
2 No Connection
HD1132R
HD11320 .
HD1132G
HD1132Y
3
4
5
6
7
8
9
lO
1
Common Anode
Cathode C
Cethode DP
Cathode B
No Connection
Common Anode
Cathode HJK
No Connection
HD1131 R
HD11310
HD1131 G
HD1131 Y
4
Anode G
3
4
5
6
7
8
9
Common Cathode
Anode C
Anode DP
Anode B
No Connection
Common Cathode
Anode HJK
10 No Connection
HD1133 R
HD11330
HD1133 G
HD1133 Y
37
Cathode E
2 . Cathode 0
3 Common Anode
4 Cathode C
5 Cathode DP
6 Cathode B
7 Cathode A
8 Common Anode
9 Cathode F
10
2 No Connection
HD1134R
HD11340
HD1134G
HD1134Y
3
TOP VIEW
Cathode G
1 Anode E
Anode D
Common Cathode
Anode C
Anode DP
Cathode B
Cathode A
Common Cathode
Anode F
10 Anode G
2
3
4
5
6
7
8
9
I
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
RADIATION CHARACTERISTICS
RELATIVE SPECTRAL EMISSION
%
120
20
40
60
80
r--,--,--,---r-----,--,--,---,
100°
--A
LUMINOUS INTENSITY
FORWARD VOLTAGE
L = fll')
LUMINOUS INTENSITY
~=/(Tambl
"
/, "" f (v.)
mA
%
red yellow
10'
120
'"
/
R
I
'I
~ I"
1'\
60
100 mA
J'.,
1"-
25
10'
;\'00"
= f
(lamb)
690
~j-"'"
680
Rj---"
R
/
o,Y,G
F
vI!
80
G
/.
AT:::
'"
640
V
t-"
o
..-l-i -
= ±::::: +-
630
0
60
620
I t-G
II
610
I
600
40
590
y~
!-I"'""
J0-
580
20
1
25
50
75
- - - (lamb)
100
°c
10'
·C
orange, green
mA
120
100
WAVELENGTH AT PEAK EMISSION
IF = ((v,)
= flTamb)
75
--nomb)
FORWARD VOLTAGE
-Y,VF 25°C
50
--V,
FORWARD VOLTAGE
%
~
,
I
1,2 1,4 1,6 1,8 2,0 2,2 2f'o 2,6 2,8 3,0 3,2 3,4 3,6 V
-·_·-1,
T100
~,y,G
20
10
1,0
I---
I\:
40
y
10'
0,1
~
80
0
10
!'.
y
10"
~If
'T100
1/
G
10
~,..
y
R1
~
570
:
560
1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8
3p
550
3,2 3,4 3,6 3,8 V
---V,
38
G
ro
25
i - f-50
75
- - - I lamb )
litronix
DL·3400 SERIES
A Siemens Company
RED
DLO·3900 SERIES
HIGH EFFICIENCY RED
0.8 INCH SEVEN SEGMENT NUMERIC DISPLAY
Package Dimensions In Inches
I----------
'.07
....
-
Specifications subject to change without notice.
DESCRIPTION
FEATURES
• Rugged Encapsulated Package
• Filled Reflector Construction
• Very Large 0.8 Inch (20 mm) Digit Height
• Choice of: Common Anode or Common Cathode
Left or Right Decimal Point
Universal Polarity Overflow
• Wide Viewing Angle
• Good "Off" Segment Contrast
• Intensity Coded for Display Uniformity
• Standard 0.6 inch Dual·ln·Llne Package
with Leads on 0.1 inch Centers
The DL·3400 Series, Red, and DLO-3900 Series, High
Efficiency Red, are very large O.B inch (20 mm) LED
seven segment displays. The series offers the choice
of either common anode or common cathode
versions, left or right decimal pOint, as well as a
polarity and overflow Indicator.
These displays were designed for viewing distances
of up to 30 feet and can be used in electronic
instruments, polnt-of·sale systems, clocks, and other
general industrial and consumer applications.
These displays are painted to match the appearance
of an unlit segment in order to maximize contrast
enhancement. Contrast enhancement filters are
recommended for use with all displays.
Part
Number
DL·3400
DL·3401
DL·3403
DL·3405
DL·3406
DLO·3900
DLO·3901
DLO·3903
DLO·3905
DLO·3906
Description
Common Anode
Common Anode
Common Cathode
Common Cathode
Universal Overflow ± 1
Common Anode
Common Anode
Common Cathode
Common Cathode
Universal Overflow ± 1
Left Hand Decimal
Right Hand Decimal
Right Hand Decimal
Left Hand Decimal
Right Hand Decimal
Left Hand Decimal
Right Hand Decimal
Right Hand Decimal
Left Hand DeCimal
Right Hand Decimal
39
I
1
2
3
4
5
6
7
8
9
1jJ
CO
D~
D
'5P
18
17
16
15
14
13
12
11
10
FUNCTION
PIN
I
2
3
••
•
•
I.
7
9
TOP VIEW
11
12
1
2
3
4
5
6
7
8
9
~AO
ED
o
~
0
DP
18
17
16
15
14
13
12
13
I.
,.I.
17
18
-3900
·3400
-3901
·3401
NOPIN
CATHODE A
CATHODE; F
ANODE
CATHODE E
ANODe
NOPIN
CATHQDE A
CATHODE OP
NO PIN
CATHOOep
ANODE
CATHODE E
ANODE
NO CONN.
NOPIN
-3903
·3403
NOPIN
ANODE A
'ANODE F
CATHODE
ANODE E
CATHODE
NO CONN.
NOPtN
NDPIN
NOPIN
CATHODE OP ANODE OP
NO PIN
NO PIN
CATHODE
ANODE
CATHODE
CATHODE
CATHODE
0
CATHODE 0
ANODE 0
ANODE
CATHooe
C
G
B
CATHODE C
CATHODE G
CATHODE B
ANODE C
ANODE G
ANODE B
NOPIN
CATHODe
NOPtN
NO PIN
NOPIN
ANODE
NOPIN
ANODE
NO PIN
-3905
-34.'
-3906
·3406
NOPIN
ANODE A
ANODE F
CATHODE
ANODe E
CATHODE
ANODE OP
NQPIN
NO PIN
CATHODE
ANODE 0
CATHODE
CATHODE
CATHODE
ANODE E
CATHODE
NOPIN
NOPIN
ANODE 0
CATHODE
ANODE C
NOPIN
ANODE OP
ANODE G
ANODE B
NOPIN
CATHODE
NO PIN
PIN
I
A
2
0
C
E
••
3
•
7
OP
CATHODE OP
CATHODE B
ANODE B
ANODE C
ANODE A
NO PIN
CATHODE A
NOPIN
8
9
I.
11
12
13
I.
I.
,.
17
18
11
10
TOP VIEW
MAXIMUM RATINGS
DL·3400 Series
DLO·3900 Series
Power Dissipation per Segment on Dp(TA=SO·C) ........ 100mW
Operating Temperature. . . . . . . . . . . . . . . . . . . . .. -20·C to +8S·C
Storage Temperature ........................ -20·C to +8S·C
Peak Forward Current per Segment or Dp
(TA = SO·C, Pulse Width < 1.2ms) ..................... 200mA
DC Forward Current per Segment or Dp .................. SOmA
Derating Factor from SO·C ........................... lmA/·C
Reverse Voltage per Segment or Dp . . . . . . . . . . . . . . . . . . . . . .. 6.0V
Lead Soldering Tempeature
(1116 inch Below Seating Place) ............... 260·C for 3 sec.
................ 8SmW
........... -"20'Cto +8S·C
...... -20·Cto +8S·C
.................... 120mA
..................... 30mA
........ ...
.6mA/·C
....................... 6.0V
. ............ 260·Cfor3sec.
OPTO·ELECTRICAL CHARACTERISTICS, @ TA=25°C
Parameter
Test Condition
Min.
Typ.
Luminous Intensity/Segment (Digit Average)
DL-3400 Series
DLO·3900 Series
.
IF =20mA
'F=20mA
SOO
6S0
900
2000
Forward Voltage
DL·3400 Series
DLO·3900 Series
IF = 20mA
IF = 20mA
1.6
2.2
2.0
2.8
V
V
Reverse Current
DL-3400 Series
DLO-3900 Series
' VR=SV
VR =6V
10
10
100
100
~A
Dominant Wavelength
DL·3400 Series
DLO-3900 Series
Ad
Ad
640
62S
10
os
IF=20mA
-1.5
mV/·C
Rise and Fall Time
Temperature Coefficient of Forward Voltage
40
Max.
Units
~cd
~cd
~A
nm
nm
litronix
DL-707, DL-707R, DL-701
A Siemens Company
RED 0.3 INCH SEVEN SEGMENT
COMMON ANODE
NUMERIC DISPLAYS
Package Dimensions In Inches
DL·707 Left Hand D.P.
DL·707R Right Hand D.P.
DL·70'N)verflow, Polarity Function
z
(!)
r
Ci5
w
Q
~
Z
a:
0.810
WOIO
~
b
z
~
o
z
Ci5
«
J:
0..
1-=
I
The DL·707, DL707R, and DL·701 are 0.3 inch
high red numeric LED display digits designed
for viewing distances up to 10 feet. The light
pipe construction insures a broad stroke width
allowing comfortable viewing for extended
periods of time. A black plastic cap surrounding
the bar segments provides good contrast.
The DL·707, DL·707R, and DL·701 are pin
for pin replacements for the DL·10/MAN·1
series of displays. Internal power dissipation is
reduced over the earlier devices by the use of
a single GaAsP diode per segment.
The DL·707 has a left hand decimal point and
is designed for use in instruments, panel meters
and general industrial applications. The ·DL·701
is a polarity and overflow display for use with
the DL·707. The DL·707R has a right hand
decimal point for use in table top calculators
and point of sale display systems.
I
W.OO3~
O.40,
!
rb
!,LIT----,w~s
I
I ,gt~
0.505 REF
_:_/
l~
L
0.403
LO.300~
to.Q10FEATURES
• Left or right hand decimal
• Easy to read 0.3" character
• Light pipe construction
• IC power supply compatible
• Intensity color coded for display uniformity
• Standard 14 pin dual·in·line package
DESCRIPTION
0.810
L ±O.OO3~I
::l
(!)
r
DO
D
"'~
L!-
o
l!.
O,OW OIA TYP
~O.OO3
j
\
L
~I
I ,00.·0",00 TV'
I---
Maximum Ratings
Power Dissipation @25"CAmblent ............... 480 mW
Derating Factor from 25"C .................. -8.0 mW'"C
Storage & Operating Temperatuare ....... -20"C to +85"C
Continous Forward Current Total . . . . . . . . . . . . . . . .. 240 mA
Per Segment or Decimal ...................... " 30 mA
Peak Inverse Voltage
Per Segment or Decimal . . . . . . . . . . . . . . . . . . . . . . . .. 3.0 V
Opta-Electronlc Characteristics (@25 0c)
Parameter
Test
Min Typ Max Unit Condition
Luminous Intensity'
Segment (Digit Analog)
55 300
Emission Peak Wavelength
650
Line Half Width
40
1.7
2
Forward Voltage
4
Forward Voltage (DL·701 ±)
3.4
0.1 100
Reverse Leakage
Forward Voltage
Temperature Coefficient
-1.8 mV'"C
I'cd
nm
nm
V
V
I'A
Specifications subject to change without notice.
41
------------_._---
--
IF =10 mA
IF =20 mA
IF =20 mA
VR =3.0V
I
PIN CONFIGURATIONS
DL·701
DL·707, DL·707R
(TOPVIEWI
T
•
4
•
1
2
3
4
14
~A.
5
6
.,l.
"
ee ~"'lcB.
2.
3
PIN
13
7
B
'9
10
11
12
13
14
11
DL.707~ ~,~..?
'~I
6
•
•
9
7
•
•
8
lOlA
(TOPVIEWI
FUNCTION
CATHODE A
CATHODE F
COMMON ANODE
OMITTED
OMITTED
DECIMAL POINT CATHODE
CATHODE E
CATHODE D
COMMON ANODE
CATHODE C
CATHODE G
OMITTED
CATHODE B
COMMON ANODE
14
·.~'- t:
3
4
5
•
··
6
7
I'
I0
•
FUNCTION
ANODE·COMMON C,D
OMITTED
OMITTED
OMITTED
OMITTED
OMITTED
7 CATHODE D
B CATHODE C
9 OMITTED
10 CATHODE B
11 CATHODE A
12 OMITTED
13 OMITTED
14 ANODE·COMMON A,B
1
2
3
4
5
6
·· lL ·· "
1
2
12
11
10
·· ,
9
Jumper Pins 1 and 14 on
Circuit Board for Common Anode
Dl·707R Pin Omitted
• DL-707 Only -
PIN
TYPICAL DRIVE CIRCUITRY
DL·701
DL·707, DL·707R
I
DATA-LIlT 707, 70lR
I
I
I
14
1
I
I
I
E
F
GAB
C
0
~~
D.P.
~~
6
Dl·707
DECIMAl_-'VV'v---'
7
2
11
1
13
10
I
8
I
*
~~
I
6
I
LOGIC
,
, '~A
C
0
iI
,---
~
~~:~~~~ ~~~~~~.~~~:~~
D,P'I
Vco
v"
I
,
v cc TTL DECODER/DRIVER
PLUS
7447
ONE DRIVER
DRIVER
9317
8T04
.IAO
t 1"
lA'
~
BCD INPUT
TYPICAL OPTOELECTRONIC CHARACTERISTICS
FIGURE 2. LUMINOUS
INTENSITY VS
FORWARD CURRENT
FIGURE 1. LUMINOUS
INTENSITY VS
TEMPERATURE
180
160
r-r-,--,,--,--,.-,
2.0
1
>-
"
/
1.5
>-
140
120
~
>- 1.0
I'\.
;;;
/
~
100
=>
80
;;;
z 0.5
3
.......
-50 -25
0
25
50
75
100
/
/
0
60
L
/
/
/
5
10
15
20
25
FORWARD CURRENT PER SEGMENT (rnA)
AMBIENT TEMPERATURE 1°c)
42
litronix
DL-702, DL-704
A Siemens Company
O.3·INCH SEVEN·SEGMENT
COMMON CATHODE
RED NUMERIC DISPLAY
z
Package Dimensions In Inches
enw
DL·702
Cl
o
DL·704
r o.
~
11.
Z
II:
o
u..
0.810
~o
b
z
~
010
0
1- L O'03--J
:::>
o
Cl
z
,0.003
~J:
I
a..
.I
FEATURES
• Left or Right Hand Decimal
0.020
±O.OO3
• Common Cathode
D,ATypjL
• Easy to Read 0.3" Character
• Light Pipe Construction
Maximum Ratings
• IC Power Supply Compatible
Power Dissipation @ 25 'C Ambient . . . . . . . . . . . . . .. 480 mW
Derating Factor from 25'C ..................... 8.0 mW/'C
Storage and Operating Temperature. . . . . .. - 20 'C to + 85 'C
Continuous Forward Current Total ................. 240 mA
Per Segment or Decimal ....................... " 30 mA
Peak Inverse Voltage
Per Segment or Decimal . . . . . . . . . . . . . . . . . . . . . . . . .. 3.0 V
• Intensity Color Coded for Display
Uniformity
• Standard 14·Pln Dual·ln·Llne
Package
DESCRIPTION
The DL·702JDL·704 is a 0.3 inch high,
red numeric LED display digit
designed for viewing distances up to
10 feet. The light pipe construction
insures a broad stroke width allowing
comfortable viewing for extended
periods of time. A black plastic cap
surrounding the bar segments
provides good contrast.
The DL·702/DL·704 is optimized for
oper~tion at 10 mAisegment DC, but
may be used successfully at 5 mAl
segment, average, when pulsed under
narrow duty cycle conditions. It is
therefore ideal for use in table top
calculators and pOint of sale
terminals.
Optoelectronic Characteristics (@ 25°C)
Parameter
Luminous Intensity/Segment
(Digit Average)
55
Emission Peak Wave Length
Line Half Width
Forward Voltage
Reverse Leakage
Forward Voltage
Temperature Coefficient
300
"cd IF =10 mA
655
nm
nm
40
1.7 2.0
V IF =20 mA
0.1 100 "A VR =3.0 V
-1.8 mV/'C
Specifications subject to change without notice.
43
------------
Teat
Min Typ Max Unit Condition
---------~~-
I
PIN CONFIGURATION
(TOP VIEW)
•
•
1
•
14
[LA •
13
_.
~.;4-.';~
2
·l'·
·
3
F
4
5
G
6
9
10
10
• ~DL'704
•
•
7
7
11
8
PIN
11
12
13
14
FUNCTION
ANODE F
ANODE G
ANODE E
D.P. CATHODE
OMITTED
D.P. ANODE
ANODE D
ANODE C
OMITTED
OMITTED
OMITTED
COMMON CATHODE EXCEPT DECIMAL
ANODE B
ANODE A
1
2
3
4
ANODE F
ANODE G
OMITTED
COMMON CATHODE
OMITTED
ANODE E
ANODE D
ANODE C
D.P. ANODE
OMITTED
OMITTED
COMMON CATHODE
ANODE B
ANODE A
S
6
12
B
•
DL.702,..............
DL·702
DL·704
FUNCTION
PIN
1
2
3
4
S
6
7
B
9
10
11
12
13
14
TYPICAL DRIVE CIRCUITRY
BCD INPUTS
(ACTIVE "HIGH")
BCD INPUTS
(ACTIVE "HIGH"I
~
~
1",
IA,' iA,
L,
AlT
ARBI
/.. i i
lAo
6lT
A,
.4.1
ARB1
V,c~5V-
Vcc=5V-
TTl DECODERfORIVER
7448/9
9307
TTL DECODER/DRIVER
7448'9
9307
BT06
BT06
,
b
.
,
RBO~
,
b
R,
,
"
RBO~
'5V
9
'5V
DE7~~~i-
DE7~~~~_
14
B
13
6
7
1
2
6
.::!~
.::! ~A .::! ~ .::! ,.C .::! ;,- .::! ~
e .::! ~ .::!~
D'
13
14
B
3
7
.
COMLoN
I
CATHODE
CATHODE
PIN 12
TYPICAL OPTO·ELECTRONIC CHARACTERISTICS
FIGURE 1. LUMINOUS
INTENSITY VS
TEMPERATURE
FIGURE 2. LUMINOUS
INTENSITY VS
FORWARD CURRENT
2.0
180
I
160 "\.
...
~...
~
"\.
120
~
/
1.5
1.0
~
100
:J
/
0
z 0.5
80
:ii
:3
......
60
-50 -25
0
25
50
75
2
DL·702
COMLoN
OPCATHOOE
PINS 4 AND 12
140
1
""~ .::! ~ .::! ;- .::! ~ .::! ~ .::! ~ "" ~ .::!~
I
DL·704
100
/
V
/
/
/
V
5
10
15
20
25
FORWARD CURRENT PER SEGMENT (mAl
AMBIENT TEMPERATURE (OC)
44
R,
litronix
DL·746, DL·747
DL·749 AND DL·750
A Siemens Company
RED O.6·INCH SEVEN·SEGMENT
NUMERIC DISPLAY
Package Dimensions in Inches
z
(!)
Ci5
w
o
DL-747/DL-750
~
z
a:
ou.
b
z
-
~
::J
o
0 100 TYP
:0010
(!)
z
Ci5
«)'
TYPICAL VERTICAL SCAN DISPLAY SYSTEM
VERTICAL STROBING - BLOCK DIAGRAM
6 LINE ASCII
TI
DIGIT SELECT
6 BIT INPUT
STORAGE BUFFERS
1
3
2
MASTER
CLOCK
TIMING
CIRCUITRY
ELECTRONIC
ARRAYS EA3501
SIGNETICS 2513/2514
II
1
5 BIT OUTPUT
STORAGE BUFFERS
COLUMN
DRIVERS
ROW
DRIVERS
==
==
-==
I I I I
J I I I I
1
LEO
DISPLAY
3
2
2
==
==
-==
58
LEO
DISPLAY
_1 J J
I
==
==
==
-
3
LED
DISPLAY
~
~
~
I-
PIN NO.
12
3
11
10
9
litronix
DL·416
A Siemens Company
4·CHARACTER 16·SEGMENT
RED ALPHANUMERIC DISPLAY
I
Package Dimensions In Inches
FEATURES
• 16 Segment Starburst
• Full Alphanumeric Display Capability
• End-Stackable Module
• High Contrast, Magnified Monolithic
Display
• Low Cost Construction
DESCRIPTION
The DL-416 is a 4 character 16 segment
alpha/numeric display_ The individual
4 character units are end-stackable_
The magnified character is slanted
5 degrees and is 160 mils high_ Designed
for use in hand-held and mobile equipment_ The DL-416 provides a high
contrast, daylite viewable display
readable at distances up to 5 ft_
Maximum Ratings
Continuous Forward Current
@ 25·C .................................. 15 mA/seg
All Segments On . . . . . . . . . . . . . . . . . . .. 5 mAiseg average
Power Dissipation @ 25·C . . . . . . . . . . . . .. 170 mW/character
Derating from 25·C ................. 3.8 mW/·C/character
Reverse Voltage ............ . . . . . . . . . . . . . . . . . . . . . .. 3 V
Operating Storage Temp .................. -20·C to 70·C
Maximum Peak Current. . . . . . . . . . . . . . . . . . . . . . . . .. 200 mA
Electro Optical Characteristics
Optical
Typical
Luminous Intensity ............2 mcd/seg, Min. @ 5 mA/seg
Spectral Peak Wavelength . . . . . . . . . . . . . . . . . .. 650 nm Typ.
Spectral Line Half-Width . . . . . . . . . . . . . . . . . . . . .. 40 nm Typ.
Viewing Angle .......... , .................... ±20· Min.
Digit Size. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 160 mils
Electrical
Forward Voltage ............ '.' ..... 1.65 Typ. @ IF = 10 mA
Reverse Current. . . . . . . . . . . . . . . . . .. 100 p.A Typ. @ VR 3 V
=
Specifications subject to change without notice.
59
..
-------~---------------------------------------.-~~.-~~-.-~--,------~~~-~~-~~.-------~
PIN CONFIGURATION
2221201918 1716151413 12
PIN
•••••••••••
•••••••••••
1234567891011
TYPICAL DISPLAY
FUNCTION
1
G, Anode
2
Decimal Point Anode
3
Common Cathode Digit 1
O2 Anoc',
4
5
L Anode
6
Common Cathode Digit 3
7
E Anode
8
M Anode
KAnode
9
10
Common Cathode Digit 4
11
0, Anode
12
J Anode
.
'13
NC
14G2 Anode
15
A2 Anode
16
I Anode
17
Common Cathode Digit 2
18
8 Anode
19
A, Anode
20
C Anode
21
H Anode
22
F Anode
P~TTERNS
60
litronix
DL-5735
A Siemens Company
0.68" (17.27 mm)
RED, 5 X 7 ALPHANUMERIC DISPLAY
Package Dimensions In Inches (mm)
.08 (2.01 OIA. MAX.
TYPICAL
ROW 1
ROW 2
+
1L",H:l.Lll.Ll.l.LJ+
ROW 3
.7°~l~~·9) .000
ROW 4
ROWS
.10012.541-!b:ffi·:ffi7{j
ROW 6
ROW 7
~~A:....>f!
PART NUMBER
tR
.250 (6.351
180 t,;:N.
~
-ll
I
I
FEATURES
.020 10.511 SO PINS
NOMINAL
I
--I
NOTE: RECOMMENDED
MOUNTING BOARD HOLE
IZE 040 (1021 +.006 (.152) OIA
S
I ' ,
-.000(.000)
.
L
.30017.621
• 5x7 Matrix Array with Row-column
Select
• End 8t Side Stackable
• Rugged Encapsuletion (Filled
Reflector Construction)
• Compatible with ASCII and
EBCDIC Format
• Standard 12 pin, 0.3" pin .paclng,
Dual·lnline·Package
• Good "OFF" Segment Contrast
Gray faca with claar segments.
DESCRIPTION
The DL5735 is a 5x 7 dot matrix gallium
arseni$le phosphide light emitting diode
alphanumeric display.
Compatible with ASCII and EBCDIC
formats, the DL5735 is well suited for
use in keyboard verifiers, computer
peripheral equipment, other applications
requiring an alphanumeric display, and
stackable both horizontally and vertically
to generate large alphanumeric or even
graphic displays.
Maximum Ratings @ 25°C
Power DissipationfPackage . . . . . . . . . . . . . . . . . . 750 mW
Derate Lineerly from 25°C. . . . . . . . . . . . . • . 11.5 mW {"C
Storage Temperature . . . . . . . . . . . . . . • . . . -20 to +70°C
Operating Temperature . . . . . . . . . . . . . . . • . -20 to +70°C
Continuous Forward Current
Per Segment . . . . . . . . . . . . . . . . . . . . . . . . .20 mA
Pulse Peak CurrentfSegment
20% Duty Cycle. • • • . . . . . . . . . . . • . . . . . . 100 mA
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Solder Temperature
1{16 below seating plane for 5 seconds. . . . . . . . . . 260°C
Opto·Electronics Characteristics @ 25°C
Paramater
Min
Luminous Intensity
Per DOT
Digit Average
100
Forward Voltage
Reverse Current
Peak Emission Wavelength
Spectral Line Half·Width
Capacitance
Typ
200
1.7
Max
2.0
100
650
40
115
Specifications subject to change without notice.
61
Unit
""d
V
/.IA
nm
nm
pf
Test
CondJtions
IF=20mA
IF =20mA
VR=3 V
V=O
I
PIN CONFIGURATIONS
PIN NUMBER
ORIENTATION
NOTCH
1~
~
PIN FUNCTION
SCHEMATIC
PIN
4-+---1
ROW 1
CATHODE
2
ROW 2
CATHODE
3
COLUMN 2
ANODE
4
COLUMN 1
ANODE
5
ROW6
CATHODE
6
ROW 7
CATHODE
7
COLUMN 3
ANODE
8
ROW 5
CATHODE
9
COLUMN 4
ANODE
10
ROW4
CATHODE
11
RDW3
CATHODE
12
COLUMN 5
ANODE
tt---t-9
TOP VIEW
FUNCTION
I
TYPICAL VERTICAL SCAN DISPLAY SYSTEM
VERTICAL STROBING -
7 LINE ASCII
T
DIGIT SELECT
7 BIT INPUT
STORAGE BUFFERS
I
2
1
MASTER
CLOCK
BLOCK DIAGRAM
I
3
1
TIMING
CIRCUITRY
I
IIII
5 BIT OUTPUT
STORAGE
BUFFERS
COLUMN
DRIVERS
ROW
DRIVERS
=
=
=
-
III
1
"
1"
LED
DISPLAY
CHARACTER
ROM
I
r=
f=
r=
r-62
2
3
2
3
LEO
DISPLAY
~
f=
~
r--
LED
DISPLAY
;::
t:
=
r-
litronix
A Siemens Company
RBG·1000
OBG·1000
RED
HIGH EFFICIENCY RED
YBG·1000
GBG·1000
YELLOW
GREEN
10 ELEMENT LINEAR DISPLAY
Package Dimensions In Inches
1
' M..--t ~
1--;10
I
TVP.
TYP.
01
I ,1-
ty~
IIUuuuuu uuo~ [[3
1..---.•• -------.1 -I.1.\.TI R:i~t Ii.
lJ
VVV: V Vi i=$
--11-.02 -II-- .04 -I 1--.10
TYP.
TVP.
TYP.
Maximum Ratings
Storage Temperature. . . . . . . . . . . . . . . . . . .. - 20· to + 85·C
Operating Temperature .................... 20·to +85·C
Power Dissipation @25·C ....................... 450 mW
Derating Factor from 25·C .................... 7.5 mW/·C
Contlnous Forward Current
RBG-1000 per display ......................... 200 mA
per element . . . . . . . . . . . . . . . . . . . . . . . . .. 20 mA
OBG-1000
YBG-1000
per display ....................... 156 mA
GBG-1000
per element ....................... 20 mA
Peak Inverse Voltage per Element. . . . . . . . . . . . . . . . . . . .. 3 V
FEATURES
Opta-Electronlc Characteristics (@25°C)
•
Parameter
Luminous Intensityl Element
(Display Average)
10 Element Display
•
End Stackable Module
•
Individual Addressable Anode and
Cathode
Test
Typ Max Unit Condition
RBG-1000
.5
mcd 'F = 20 mAl
Segment
Intensity Coded for Display
Uniformity
OBG-1000
2.5
mcd 'F = 20 mAl
Segment
•
Rugged Encapsulation
YBG-1000
2.0
•
Choice of Colors
mcd 'F = 20 mAl
Segment
GBG-1000
2.0
mcd 'F = 20 mAl
Segment
•
DESCRIPTION
The Red RBG-1000, Hi-efficiency Red
OBG-1000, Yellow YBG-1000, and Green
GBG-1000 are 10 individual element
linear bar displays_ They are contained in
a 1 inch long, 20 pin dual-in-line package
that can be end stacked as bar-graph
displays of various lengths_ Applications
include: bar graph, solid-state meter
movement, position indicator, etc.
Forward Voltage
RBG-1000
OBG-1000
YBG-1000
GBG-1000
Reverse Leakage
Emission Peak Wavelength
RBG-1000
OBG-1000
YBG-1000
GBG-1000
1.7
2.2
2.4
2.4
0.1
660
630
585
565
2.0
2.8
3.0
3.0
100
V
V
V
V
pA
nm
nm
nm
nm
Specifications subject to change without notice.
63
IF =;20 mA
'F=2O mA
'F=20 mA
IF =20 mA
VR =3 V
I
RBG-1000, OBG-1000, Y8G-1000 AND GBG-1000
TOP VIEW
PIN
20 19 18 17 16 15 I. 13 12
II
000000000
PRODUCT IDENTIFICATION
MARKING
TYPICAL
FUNCTION
ANODE 1
ANODE 2
ANODE 3
ANODE 4
ANODES
ANODE 6
ANODE 7
ANODE 8
ANODE 9
ANODE 10
1
2
3
4
S
6
7
8
9
10
PIN
FUNCTION
11
12
13
14
1S
16
17
18
19
CATHODE 10
CATHODE 9
CATHODE 8
CATHODE 7
CATHODE 6
CATHODES
CATHODE 4
CATHODE 3
CATHODE 2
CATHODE 1
20
APPLICATIONS
+12V
Il
UAAI70
12
II...
V IN-VV'lr-_-
....
LIGHT SPOT DISPLAY
+12V
I
I
'1citi1 II
LINEAR DISPLAY
DRIVERS
Siemens UAA170
Siemens UAA180
National LM3914
National LM3915
siiarp I R2406
~
t----l!
~
VIN
*
~ J JJJ :fd=1
IIIU_!Jl DDD I
18
~UJU 1~11!I 1111
1
1111111
~I--
J
UAAllO
17
•
...
~
LIGHT BAND DISPLAY
No endor.ment or warranty of other manufacturer·, products II intended by Lltronlx
64
LED Intelligent DisplaysTM
Package
Tvpe
Package Outline
4 Char.
Module
Encapsulated
IWI
t\l/~n\J§]"/1
ii~IIZI~ ,:;,5:1 1/1:\1
-'SI
DL-1414
_112"
Description
17 segment, 4 character display with built in
CMOS ASCII decoder, multiplexer, memory and
DL-1416
I2ISJ IZIS'
IZI~I
,"
17
16]j,.
II
•
71
75
,
,
,
DL-2416
.160"
17 segment, 4 character display with built in CMOS
ASCII decoder, multiplexer, memory and driver
DL-3416
.225"
17 segment, 4 character display with built in CMOS
ASCII decoder, multiplexer, memory and driver
•
r~I~:~~" '*'
DL-3422
I
,
10
o:j:
79
11
~
:::c
:::c
",
I
16 segment, 4 character display with built in CMOS
ASCII decoder, multiplexer, memory and driver
IZ/~1
rzlSl ILISI rzlSl
,
.160"
IZJSI
~
:::r:-
67
- - - -.Ig
~
'0
Page
- - - - i
I2I.S)
1215.1
"11
16& 32
Char.
Assembly
0~1
- --
!
4 Char.
Module
Encapsulated
~
~
4 Char.
Module
4 Char.
Module
Encapsulated
Charactar
Height
driver
- - - -
4 Char.
Module
Encapsulated
Part
Number
22 segment, 4 character display, upper and lower
case letters with built in CMOS ASCII decoder,
lower
multiplexer, memory and driver
upper
83
case
H
"I""~
case
IDA-241616
IDA-241632
16 character assembly containing four DL-2416
.160"
65
displays
32 character assembly containing eight DL-2416
displays
87
66
litronix
A Siemens Company
DL·1414
.112" RED, 4·DIGIT 17·SEGMENT
ALPHANUMERIC Intelligent DisplayTM
WITH MEMORY/DECODER/DRIVER
r
Physical Dimensions (Inches)
Brightness Code
.01 TY:l
If
.60
~
~Mfr.&Pinl1dentifier
...-..
--
...-... , ...-...
Part Number
& Date Code
Tolerance ± .01 Unless Otherwise Noted
FEATURES
• 112 Mil High, Magnified Monolithic Char.
• Wide Viewing Angle, ± 40o
cuitry. Inputs are TTL compatible. A single 5-volt
power supply is required. Data entry is asynchronous
and random access. A display system can be built
using any number of D L 1414's since each character
in any DL1414 can be addressed independently and
will continue to display the character last written
until it is replaced by another.
• Close Vertical Row Spacing, .800 Inches
•
Rugged Solid Plastic Encapsulated Package
•
Fast Access Time, 450 nSEC
• Compact Size For Hand Held Equipment
•
•
Built·ln Memory
Built·ln Character Generator
•
Built-In Multiplex and LED Drive Circuitry
•
Direct Access To Each Digit Independently and
Asynchronously
•
TTL Compatible, 5 Volt Power
•
17th Segment For Improved Punctuation Marks
•
Low Power Consumption, Typically 10 mA per
character
•
Intensity Coded For Display Uniformity
•
End-Stackable, 4-Character Package
LOADING DATA
Loading data into the DL 1414 is straightforward. The
desired data code (D o -D 6) and digit address (Ao,A,)
is presented in parallel and held stable during a write
cycle. Data entry may be asynchronous and in random
order. (Digit 0 is defined as right hand digit with
A, ; Ao ; 0; low).
System interconnection is also straightforward. The
least significant two address bits (Ao , A,) are normally
connected to the like named inputs of all DL1414's in
the system. Data lines are connected to all DL 1414's
directly and in parallel. Multiple DL 1414 systems
usually use an external one-of-N decoder chip. The
"write" pulse is connected to the CE of the decoder.
A 3-to-8 line decoder multiplexer (74138) or a 4-to-16
line decoder/multiplexer (74154) are possible choices.
All higher-order address bits (above A, ) become
inputs to the decoder.
DESCRIPTION
The DL 1414 is a four digit display module having 16
bar segments plus a decimal segment and a built-in
CMOS integrated circuit.
The integrated circuit contains memory, ASCII character generator, and LED multiplexing and drive cir-
Specifications Subject To Change Without Notice
67
I
TOP VIEW
121110987
Pin
Function
Pin
1
2
3
05 Data Input
7
8
Gnd
DO Data Input (LSB)
9
4
5
6
04 Data I n put
WR
Write
Function
A 1 Digit Select
At Digit Select
11
01 Data Input
02 Data Input
03 Data Input
Vee
12
06 Data Input (MSB)
10
~
~
123456
""
Product Identification
Markings on Front Surface
OPTO·ELECTRONIC CHARACTERISTICS 26"C
r-------------------------,
MAXIMUM RATINGS
OPTICAL CHARACTERISTICS (TYPICALI
@
Voltage, Any Pin
Respect to GND . . . . . . • . . -.5 to +6 VDC
Operating Temperature . . . .. -20·C to 65" C
Storage Temperature. . . . . •. -20·C to 70·C
Relative Humidity (non condensingl @65·C,85%
Luminous Intensity per digit/8 segmen·ts @ 5V •
Off Axis Viewing Angle (Note 11 .
Digit Size . . . . . . . . .
Spectral Peak Wavelength ••..•
0.5mcd
.• ±40·
112 mils
. 660nm
DC CHARACTERISTICS
Parameter
-20·C Typ
ICC 4 Digits on (10 seg/Digitl
100mA
+25·C (Note 61
90mA Max
+65·C Typ
Conditions
70mA
VCC - 5.0 V
VIN =0
~C=5.0V
=5.0V
2.7 mA Max
ICC Blank
160 "A Max
180"A
IlL
.8V Max
VCC -4.5V
2.7 V Min
3.3 V Min
\Icc -4.5 V
VIL
VIH (Note 41
VIN=·8V
VCC = 5.0 V
100 "A
VCC - 5.5 V
TIMING CHARACTERISTICS
WRITE
eye
AC CHARACTERISTICS
MINIMUM TIMING PARAMETERS@4.5 V (nanosecondsl
Alii. A I
TAS
TWD
TW
TDS
TDH
TAH
300
50
250
200
50
50
400
75
325
250
50
50
500
125
375
300
100
100
...
00-06
LE
WAVEFORMS
:JC
TDH=.i
~4VOLTS
-2VQLTS
o VOL TS
Note 1: This display contains a CMOS integrated circuit. Normal CMOS handling precautions .tmuld be taken to
avoid damage due to high static voltages or electric fields.
Note 2: Unused inputs must be tied to an appropriate logiC voltage level (eigher V+ or V-).
Note 3: Warning - Do not use solvents containing alcohol.
72
LOADING DATA
LOADING CURSOR
The chip enable (CE) held low and cursor (CU) held
high will enable data loading. The desired data code
(DO·06) and selected digit address (Ao·A1) should be
held stable while write (vii) is low for storing new data.
The timing parameters in the AC characteristics
table are minimum and should be observed. There are
no maximum timing requirements. Data entry may be
asynchronous and in random order. All undefined
data codes (see character set) loaded as data will dis·
playa blan k.
The chip enable (CE) and Cursor (CU) are held low.
A write (W) signal will now load a cursor into any
digit position for which the respective first four data
lines (Do, 01,02,03) individually or together are
held high. If previously stored, the cursors can only
be removed if their respective data lines are held
low while CE, CU are low and write (W) occurs.
I
The cursor (CU) should not be hardwired high (off).
During the power·up of OL·1416s the cursor memory
will be in a random state. Therefore, it is recommended for the processor-based system to initialize
or write out possible cursors during,the system initializing portion of the software.
Digit 0 is defined as the right hand digit with A1 = AO
= 0 = low.
The cursor display will be over ridden by a blank
from an undefined code in that digit position.
TYPICAL LOADING DATA STATE TABLE
TYPICAL LOADING CURSOR STATE TABLE
rf~I: 1-~ ~ ~: ~I~I~T--r~I~:-)' -'
ADDRESS
CE
I
H
L
ill Vi
X
X
Ao
X
06
05 04
03
f----,-~
X
X!XIX
02
01
00
H
L
H
L
H
L
L
L
l
HIH
L
H
H1H
L
l
l
H
L
= DON'T CARE
l
DIGIT DIGIT DIGIT DIGIT
3
2
1
C"~~., '":Z.' '":~"
I
CHANGE
B
A
CHANGE
C
B
A
L'I'
~ t:Jlfl~l ~lllj
A
CH~~GE
DeB
A
DeB
E
o
E
K
B
:~
ADDAESS
1~I ~l,:
0
CH~~GlCH~:kE CH~~GE CH~~Gf
xix x
LIH
lh :I~
x
A,
f-'X
DATA INPUT
il
Il
L
III
llL
L
L
X
X
X
DATA INPUT
D: 1 0: I D: ID: I o:! Dx'i DXO
X'IX'x,x
X
X'IX'X
x'X,X
X
L
L
l
11,
L
L
L, . Lli. x
LiL'x
_LJ l
X
x
x
x
X
XIX
X
X
j
x
X
x
H
H
CHARACTER SET
~D2i
L !H
L
iL
i
!L H L IH
!L H H l
l
H
L
H
l
H
H
H
L
L
H
H
H---j_H~-I
L -+--"L_+-~H_t-_H__1-__
L
~T~D4t3'-'1r-_+
__---i---+--t--+---1--"
~ , , :::8 I 9) % ~y I
(')
* -II
I
I
I
, --
-u-t--
I
J
J i
---+---+-,----1
ll_,,:I_,C l!h ,
rr
1
'-'
-+--+--n-~I·-n--~-- ~!
I
1-1
,-)
t-::"- r-'2--L::'
- ~---iI-{---+-::-::--+---~-+-'---1
I 0
:q '=-t
r- ___ C -+-_'C__ ,-~
IH L
I
::-,
L
lU
H L L H
'--I
,-
"
.L
L
"
T
T,
l__
' +--l__
!
_U
jf
I 'I i'
r"
1\"
l-l_)___1
1\,
r,
r L-J--+-~-,--+-~-'II-,--I
mf )( fYT2 I( _~~1~_~:_ _'_ ,_,
'-'
," ,"" ~ G R 5
l_
I I
''II
LJ
---'-_-------.J
NOTE: All undefined data codes that are loaded or occur on power-up will cause a blank display state.
73
L
l
H,H
1 XL, L
X = DON'T CARE
L
L
H
L
L
LiLIL,XXXXXlHlL
~~~~~
00
01
L'L
L
L
L
H
j
l
DIGIT DIGIT
3
2
L
H
; L
K
D
93
93
93
III
"'"'f
,
0
B
B
B
til
E
93
E
E
B
III
B
1
1
93
E
I
I
,~
T
-,r-
~ 'ElE~'~~"LE ~ i 1-------------,
'--,-----,---_---,-Jl.~l! -umn
--32lINES---1
-
DECODER
I I
~
".
C£~LRI
~ ~ ~ ~
DECODER
DISPLAY
I
r---t-++++--!>-------ll
I Ar~~~.-"-r-r~I---~-t.-~r~tfl-+i~~-D~D~"""~"~'VE~RS'-------~
DECODER
AO A.
1!r
W
fll
06 OS D4 D3 D2 Dl 0'
INTERNAL SCHEMATIC
D11
DATA BUS
D1If
09
DI
l1li l1li l1li l1li
l1li l1li l1li l1li
o,.o,;;..~eI!
0,.0,
w....CDCl!
D3
D2
01
l1li
l1li l1li l1li
0,.0, ;;
0,-0.
D,
Cl!
111\
w
A,
"
CD
Typical interconnect
lor small systems. 12dlgits
031--- D 2 7 - - - - - - - - - - - - - - -
-00
----------
l1li l1li l1li l1li
l1li l1li l1li l1li
00""'0. WAoA1CU CE~_--to.W
DATA
BUS
>
A,cuC!E
l1li l1li l1li l1li
------------
0.-+0.
1
iii
I
A0
A1
A2
A3
A4
DISABlE
~
A
B
6
5
C
D
4
3
DISPLAYS
1106
2
74C421
L--!
Typical schematic
lor 32 digit systems
74
o,-+D. W A, CUte
II
litmnix
A Siemens Company
DL-2416, DL-2416 H
.160" RED, 4·DIGIT 16·SEGMENT PLUS DECIMAL
ALPHANUMERIC Intelligent DisplayTM
WITH MEMORY/DECODER/DRIVER
Physical Dimensions (Inches)
.OITY]
.25 TYP.
r~~
11
.79
.60
_J
-j~~
I---- -----I
.99
MFR &PIN 1 identifier
T'!:-'"'----"C-,-:c/-----,:-:,"-.. .-.:--,:-:_,,--;;,.- ~~~T8ER
~
& DATE
='.16
LL'1TLX=--.",0.,..-L'2"416_X.,..-XY,,Y,,-,=~TYP.
Tolerance ± .01 Unless Otherwise Noted
FEATURES
DESCRIPTION
• 160 Mil High, Magnified Monolithic Char.
The DL 2416 is a four digit display module having 16
segments plus decimal and a built-in CMOS
integrated circuit.
• Wide Viewing Angle ± 50°
• Close Vertical Row Spacing, .BOO Inches
•
Rugged Solid Plastic Encapsulated Package
•
Fast Access Time
DL-2416 500 nSEC
DL-2416H 300 nSEC
•
Full Size Display for Stationary Equipment
•
Built-in Memory
•
Built-in Character Generator
•
Built·in Multiplex and LED Drive Circuitry
•
Direct Access to Each Digit Independently &
The integrated circuit contains memory, ASCII ROM
decoder, multiplexing circuitry, and drivers. Data
entry is asychronous and can be random. A display
system can be built using any number of DL 2416's
si nce each digit of any D L 2416 can be addressed
independently and will continue to display the character last stored until replaced by another.
System interconnection is very straightforward. The
least significant two address bits (Ao , A1 ) are normally
connected to the like named inputs of all DL 2416's
in the system. With two chip enables (CE1, and CE2)
four DL 2416's (16 characters) can easily be interconnected without a decoder.
Asynchronou~ly
Alternatively, one·of-n decoder IC's can be used to
extend the address for large displays.
• TTL Compatible, 5 Volt Power
•
Independent Cursor Function
•
17th Segment for Improved Punctuation Marks
•
Memory Clear Function
•
Display Blank Function
•
End-Stackable, 4-Character Package
•
Intensity Coded for Display Uniformity
Data lines are connected to all D L 2416's directly and
in parallel, as is the write line (WR). The display will
then behave as a write-only memory.
The cursor function causes all segments of a digit
position to illuminate. The cursor is not a character, however, and upon removal the previously
displayed character will reappear.
Specifications are subject to change without notice.
75
I
TOP VIEW
••• •
.• ·. •
1
2
3
4
5
6
7
8
9
txxx:
•• • • • • • • •
1
4
2 3
5
6
7
8
Function
Pin
18 17 16 15 14 13 12 11 10
Pin
~ Chip Enable
l:"'E2 Chip Enable
erA Clear
CUE Cursor Enable
~ Cursor Select
mWrite
A 1 Digit Select
A0 Digit Select
VCC
Function
10
11
12
13
14
15
16
17
18
Gnd
0(1 Data Input
01 Data Input
02 Data Input
03 Data Input
06 Data I n put
05 Data Input
04 Data I "put
En:
Display Blank
9
Product Identification Marking
On Front surface.
OPTO-ELECTRONIC CHARACTERISTICS @ 25"C
MAXIMUM RATINGS
OPTICAL CHARACTERISTICS (TYPICAL)
Voltage, Any Pin
Respect to G N D
· . -.5 to0 6.0 VDC
_20 to 65'C
Operating Temperature
_20' to 70'C
Storage Temperature ..
·.
Relative Humidity
(non condensingl@65'C .... . . . . . . 85%
Luminous Intensity per digit/8 segments
Off Axis Viewing Angle (Note 1 I .
..
Digit Size . . . . . . . . . . ..
Spectral Peak Wavelength . ........
0.5 mcd
±50'
160mils
.660 nm
DC CHARACTERISTICS
DL-2416 AND DL·2416 H
_20°C Typ
Parameter
+25°C4
Icc 4 digits on (10 seg/digit)
135mA
125mA max 1
Icc Cursor 2
160mA
140 mA max 1
+65°C Typ
Conditions
100mA
VCC = 5.0 V
120mA
Vcc = 5.0 V
3.7 mA max
ICC Blank
VIN - 0
~ =5.0V
WR = 5.0 V
200jlA
IlL
160jlA max
1. Measu red at 5 sec.
2.60 sec max duration.
.8 V max
VCC = 4.5 V
Vr.r. = 4.5 V
VCC - 5.5 V
4. Vcc = +5.0 VDC ±10%
TIMING CHARACTERISTICS
3. Vcc ;;;. VIH ;;;. 0.6 VCC·
WRITE CYCLE WAVEFORMS
eEl , CE2
AC CHARACTERISTICS
Timing Parameters @ 4.5 V (nanoseconds)
----~20°C Typ
+2SoC Min
Parameter ~--~- ___
l
Dl·2416
e::---- ---TAS
TWO
TW
TOS
ITAH
TOH
TCEH
TCES
LA _
300
50
250
150
50
50
50
300
Dl·2416 H
200
50
150
100
50
5P
50
150
DL·2416
I
DL·2416 H
450
250
150
50
300
200
250
150
50
50
50
50
50
50
450
250
15 milliseconds
~
t...==
TeES - - '
+6S"C Typ
A'/J, A I
-DG2416-~
600
175
425
350
100
100
100
600
400
75
325
250
100
100
100
400
access time
500 ns
VIN =.8 V
VCC = 5.0 V
2.7 V min
3.3 V min
VIL
V IH 3
100jlA
""
TWD
:J
Tw
X
_I
I
TIMING MEASUREMENT
VOLTAGE
><==
:
T AS - -_ _ T AH
~
J C -.J
00-D6 CiJ
J
300 ns
=x1---
TCEH!--
TDs.
>c
i
, - TDH-I
~4VOLTS
LEVELS
-
2 VOLTS
o VOLTS
Note 1: "Off Axis Viewing Angle" IS here defined as: "the minimum angle in any direction from
the normal to the display surface at which any part of any segment in the display is not
visible",
Note 2: This display contains a CMOS integrated circuit. Normal CMOS handling precautions should
be taken to avoid damage due to high static voltages or electric fields.
Note 3: Unused inputs must be tied to an appropriate logic voltage level (either V+ or V-I.
Note 4: Warning - Do not use solvents containing alcohol.
76
lOADING DATA
not be cleared by the ClR signal. The cursor (CU)
pulse width should not be less than the write (WR)
pulse or erroneous data may appear in the display.
Setting the chip enables (CE1, CE2) to their true
state will enable data loading. The desired data code
(00-06) and digit address (Ao , A 1 ) must be held
stable during the write cycle for storing new data.
For those users not requiring the cursor, the cursor
enable signal (CUE) may be tied low to disable
display of the cursor function. A flashing cursor can
be realized by simply pulsing CUE. If cursor has been
loaded to any or all positions in the display, then
CUE will control whether the cursor(s) or the characters appear. CU E does not affect the contents of
cursor memory.
Data entry may be asynchronous and random. (Digit 0
is defined as right hand digit with Al = AO = 0.)
Clearing of the entire internal four-digit memory can
be accomplished by holding the clear (C1J'i) low for
one complete display multiplex cycle, 15 mS minimum.
loading an illegal data code will display a blank.
lOADING CURSOR
DISPLAY BLANKING
Setting the chip enables (CE1, CE2) and cursor
select (CU) to their true state will enable cursor loading. A write (WR) pulse will now store or remove a
cursor into the digit location addressed by AO, Al;
as defined in data entry. A cursor will be stored if
DO = 1; and will be removed if DO = O. Cursor will
Blanking the display may be accomplished by loading
a blank or space into each digit of the display or by
using the (B l) display blank input.
Setting the (Bl) input low does not affect the contents of either data or cursor memory. A flashing
display can be realized by pulsing (Bl).
TYPICAL LOADING DATA STAre TABLE
CONTROL
m::
H
H
H
H
H
H
X
X
L
L
H
L
L
L
L
L
L
H
X
L
X
X
X
L
L
H
H
L
L
X
AO
D1
X
PREVIOUSLY LOADED DISPLAY
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
L
L
L
H
H
H
L
H
X
L
X
L
L
L
H
H
L
L
X
L
H
X
L
X
X
L
X
H
X
H
L
H
H
H
L
X
H
X
X
H
X
H
L
L
L
H
L
H
X
X
L
D6 D5 D4 D3 D2
H
H
H
H
H
H
H
L
H
x
X
H
X
A1
DISPLAY
DIGIT
DATA
ADDRESS
"CET l:U CUE 1m' ViA CIJi
H
H
L
L
L
H
H
H
L
L
L
L
L
L
H
L
H
H
L
L
H
L
L
H
DO
3
2
1
0
X
G
G
R
R
E
E
X
H
G
R
R
Y
Y
Y
H
G
L
L
G
R
L
B
L
U
U
E
E
E
G
L
U
E
BLANK DISPLAY
L
H
H
H
L
L
H
CLEARS CHARACTER DISPLAYS
G
E
E
U
E
SEE CHARACTER
SET
SEE CHARACTER CODE
=DON'T CARE
LOADING CURSOR STATE TABLE
CONTROL
m::
H
H
H
H
ADDRESS
"CET l:U CUE 1m' ViA CIJi
X
X
X
L
X
L
L
L
L
L
H
H
H
X
X
H
AO
DISPLAY
DIGIT
DATA
D6 05 D4 D3 D2 D1
DO
3
2
1
0
E
E
A
R
R
H
PREVIOUSLY LOADED DISPLAY
B
H
H
L
L
DISPLAY PREVIOUSLY STORED CURSORS
X
X
X
H
L
L
X
X
X
X
X
X
X
X
H
L
H
X
B
B
B
L
H
L
L
L
L
H
H
H
H
H
L
L
L
L
H
H
L
L
L
L
H
H
x
x
H
L
L
X
L
H
H
L
L
H
X
X
H
X
L
H
H
H
H
H
A1
H
H
H
H
L
L
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
DISABLE CURSOR DISPLAY
II x x
x x
x
DISPLAY STORED CURSOR
x = DON'T CAR E
77
X
A
A
L
IlII
IlII IlII
B IlII IlIIIlII
iii iii IlII IlII
IlII E Willi
L
B
B
H
H
B
E
E
E
E
E
A
R
A
R
W IlII
CHARACTER SET
~~c-+D3
L
H
L
L
L
D6D, 04
HEX
0
1
L H L
2
L H H
3
D2
L
L
H
L
L
H
H
L
L
L
H
L
L
,
2
3
4
H
L
H
L
•
cc
L 4
H L H •
L
H
L
L
L
L
H
6
7
8
H
L
L
H
L
H
L
H
9
A
H
H
L
L
L
H
H
H
•
C
H
L
H
H
H
H
H
H
H
H
\
/
/
\
I
*
-:-
D
E
F
/
/
{.
/
I
\I
~
V\I
V
\
/\
\
All other input codes display "blank"
ROM
Internal Block Diagram
+5
I
GNO
_
1015
00-06 r4-- 14
ClR
t
iii
\Vii
CU
t
I
04r
t
,=4=
CUE
AoA
--
I
2
1
"...
4>
CE2
CE2
CEl
CEl
Typical Schematic for 16 Digit System
78
001
3
t
L
H
--
" ±I -'-' % ~y
,..,
,, J
L
3 u, c-' Uc ..., 8 0-',. -- tI
---,
,
,
,
-,-,
rr:-,
c
'"D
I I
LlI n _u L_
.u L c- lJ ,--, .L U I-( L_ '\I'
,-,
,
,
-,
*7
T
r
1/
I
I
,C'- lY ,C' -)C , '--'
Vi , t_ '-'
I
I
H L
H
H
L
H
H
/
/
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n
litronix
A Siemens Company
DL·3416, DL·3416 H
.225" RED, 4·DIGIT 16·SEGMENT PLUS DECIMAL
ALPHANUMERIC Intelligent DisplayTM
WITH MEMORY/DECODER/DRIVER
PRELIMINARY
Physical Dimensions (in inches)
j",Ol'VP.
j
1
1-----1.29---PART NUMBER 80 DATE CODE
Tolerance ± ,01 Unless Otherwise Noted
FEATURES
• 225 Mil High, Magnified Monolithic Char.
DESCRIPTION
The DL 3416 is a four digit display module having 16
segments plus decimal and a built-in CMOS
integrated circuit.
• Wide Viewing Angle ±40 o
• Close Vertical Row Spacing, 0.8 Inches
•
Rugged Solid Plastic Encapsulated Package
•
Fast Access Time
DL-3416 500 nSEC
DL-3416H 300 nSEC
•
Full Size Display for Stationary Equipment
The integrated circuit contains memory, ASCII ROM
decoder, multiplexing circuitry, and drivers. Data
entry is asynchronous and can be random. A display
system can be built using any number of DL 3416's
since each digit of any DL 3416 can be addressed
independently and will continue to display the
character last stored until replaced by another.
• Built-in Memory
•
System interconnection is very straightforward. The
least significant two address bits (A o, A,) are normally
connected to the like named inputs of all DL 3416's
in the system. With four chip enables four DL 3416's
(16 characters) can easily be interconnected without
a decoder.
Built-in Character Generator
•
Built-in Multiplex and LED Drive Circuitry
•
Each Digit Independently Addressed
• TTL Compatible, 5 Volt Power
•
Alternatively, one-of-n decoder IC's can be used to
extend the address for large displays.
Independent Cursor Function
• 17th Segment for Improved Punctuation Marks
Data lines are connected to all DL 3416's directly and
in parallel, as in the write line (WR). The display will
then behave as a write-only memory.
The cursor function causes all segments of a digit
position to illuminate. The cursor is not a character,
however, and upon removal the previously displayed
character wi II reappear.
• Memory Clear Function
•
Display Blank Function
• End Stackabla, 4-Character Package
• Intensity Coded for Display Uniformity
Specification subject to change without notice.
79
I
TOP VIEW
2221
20
19
Pin
1
2
3
4
5
6
7
8
9
10
11
" " " "
18' 1716
tccc
. .
, , ,
L
.
, , ,
10
\1
Product Identification
Marking on Front Surface
Function
Pin
CEl Chip Enable
~ Chip Enable
CE3 Chip Enable
CE4 Chip Enable
CLR Clear
VCC
AO Digit Select
&Digit Select
WR Write
CU Cursor Select
CUE Cursor Enables
12
13
14
15
16
17
18
19
20
21
22
Function
Gnd
N/C
If[ Blanking
N/C
DO Data Input
01 Data Input
02 Data Input
03 Data Input
04 Data Input
05 Data Input
06 Data Input
OPTO-ELECTRONIC CHARACTERISTICS @ 25°C
MAXIMUM RATINGS
OPTICAL CHARACTERISTICS (TVPICAL)
Voltage, any pin respect to GND .
Operati ng Temperatu re
-.5 to 6.0 VDC
. _20° to +65°C
. _20° to +70°C
Storage Temperature . . . .
Relative Humidity
(noncondensingl@65°C
.
"
Luminous Intensity 8 segments/digit@ 5 V, 5 mcd
Off Axis Viewing Angle (Note 11 .
· . .. ±40°
Digit Size .........
.
· . 225 mils
Spectral Peak Wavelength .. ;.•.
· ; 660nm
.
. . . . 85%
.
DC CHARACTERISTICS
DL-3416 AND DL-3416H
_20°C Typ
+65°C Typ
Conditions
Icc 4 digits on (10 seg/digit)
190mA
150 mA max 1
120mA
Vcc = 5.0V
ICC Cursor 2
225mA
175mA max 1
150mA
VCC = 5.0V
19 mA max
ICC Blank
160tlA max
225tlA
TCEH
TeES
TelR
VIN =.8 V
VCC = 5.0V
.8V max
Vcc = 4.5V
VIH 3
2.7 V min
3.3 V min
VCC -4.5 V
Vcc = 5.5 V
4. Vcc
= +5.0 VDC ±10%
3. Vcc ;;. VIH ;;. 0.6 VCC'
AC CHARACTERISTICS
-20"C Typ
DL·3416
DL·3416H
300
50
250
150
50
50
50
300
200
50
150
100
50
50
50
150
+2So C Min
DL-3416
DL-3416H
450
250
150
50
300
200
150
250
50
50
50
50
50
50
450
250
15 milliseconds
TIMING CHARACTE RISTICS
WRITE
CY C L E
CE3.m
+66°C TVp
DL-3416
DL·3416H
600
175
425
350
100
100
100
600
400
75
325
250
100
100
100
400
A¢, AI
I--TCES - - ,
=x1.:===
:
J "-C --YI
j< i
WI'!
Two
00-06. CD
TIMING MEASUREMENT
VOLTAGE
>C
~4VOLTS
LEVELS
Note 3: Unused inputs must be tied to an appropriate logic voltage level (either V+ or V-I.
80
x=
- - TDH=.I
Note 1: "Off Axis Viewing Angle" is here defined as: "the minimum angle in any direction from
the normal to the display surface at which any part of any segment in the display is not
visible".
Note 2: This display contains a CMOS integrated circuit. Normal CMOS handling precautions should
be taken to avoid damage due to high static voltages or electric fields.
Note 4: Warning - Do not use solvents containing alcohol.
1-
Tw
TOS
300 ns
TCEH
TAS - - - - TAH:.J
access time
500ns
WAY E FORMS
CEI,CE2
Timing Par.meteR @ 4.5 V (nanoseconds)
TAS
TWO
TW
TOS
TOH
TAH
150 tlA
VIL
1. Measured at 5 sec.
2.60 sec max duration.
'.,amat.,
VIN = 0
= 5.0 V
WR = 5.0 V
YJ;s;
IlL
-
+25°C4
Parameter
-
2 VOLTS
o VOL T8
LOADING DATA
Setting the chip enables (CE1, CE2, CE3, CE4) to their
true state will enable data loading. The desired data
code (00·06) and digit address (AD, A1 ) should be
held stable during the write cycle for storing new data.
cursor (CU) pulse width should not be less than the
write pulse (WR) width or erroneous data may appear
in the display.
For those users not requiring the cursor, the cursor
enable signal (CUE) may be tied low to disable
display of the cursor function. A flashing cursor can
be realized by simply pulsing CU E. If cursor has been
loaded to any or all positions in the display, then
CUE will control whether the cursor(s) or the characters appear. CU E does not affect the contents of
cursor memory.
Data entry may be asynchronous and random. (Digit 0
is defined as right hand digit with A1 : AD : 0.)
Clearing of the entire internal four·digit memory can
be accomplished by holding the clear (ClR) low for
one complete display multiplex cycle, 15 mS minimum.
LOADING CURSOR
DISPLAY BLANKING
Setting the chip enables (CE1, CE2, CE3, CE4) and
cursor select (CU) to their true state will enable
cursor loading. A write (WR) pulse will now store or
remove a cursor into the digit location addressed by
AD, A1; as defined in data entry. A cursor will be
stored if DO: 1; and will be removed if DO : O.
Cursor will not be cleared by the ClR signal. The
Blanking the display may be accomplished by loading
a blank or space into each digit of the display or by
using the (B l) display blank input.
Setting the (Bl) input low does not affect the contents of either data or cursor memory. A flashing
display can be realized by pulsing (BL).
TYPICAL LOADING DATA STATE TABLE
DIGIT
l![ CE1 CE2'CE3CE4 CUE CU
H
H
H
X
L
X
X
L
X
X
X
H
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
X
H
X
H
H
H
x
X
H
H
H
X
X
X
H
X
X
L
X
X
X
L
L
L
X
H
X
L
WIt car
L
XI H
X
X
X
X
X
X
H
H
H
L
X
X
L
L
X
H
H
L
H
H
H
L
H
H
X
X
X
X
X
X
H
X
X
X
X
X
X
H
X
X
H
L
L
H
X
H
L
L
H
L
L
L
L
L
H
H
L
L
X
X
L
X
X
H
H
H
L
X
H
L
H
L
L
L
L
L
X
H
L
D6 D5
X
X
L
L
X
AD
D4 D3
D2
D1
DO
3
2
1
0
R
R
E
Y
R
E
E
Y
Y
E
Y
Y
PREVIOUSLY LOADED DISPLAY
H
L
L
X
A1
X
X
X
X
G
G
X
X
X
X
X
X
X
X
G
G
G
R
R
X
X
H
X
X
G
G
R
R
X
X
X
X
X
X
X
X
X
L
X
L
H
L
H
L
L
L
H
H
H
L
L
L
L
H
L
X
H
X
BLANK DISPLAY
X
X
A1
AD
X
X
H
E
E
E
Y
E
H
L
L
H
G
R
U
E
H
L
L
H
L
L
G
B
L
L
U
U
E
E
H
GILlul E
H
HI L I LI LI HI HI
CLEARS CHARACTER DISPLAY
SEE CHARACTER
SET
SEE CHARACTER CODE
x = DON'T CAR E
LOADING CURSOR STATE TABLE
l![ CE1 CE2CE3CE4CUE err
H
WI'! car
D6 D5 D4
D3 02
D1
DO
X
X
H
X
X
H
X
X
L
X
X
L
X
L
L
L
L
H
H
H
H
H
H
H
X
L
H
H
PREVIOUSLY LOADED DISPLAY
DISPLAY PREVIOUSLY STORED CURSORS
L
L
X
X
X X X X H
H
L
X
X
X
X
X
X
H
L
L
H
L
L
H
H
L
X
H
H
L
H
X
X
X
H
L
H
H
X
H
L
L
H
H
L
L
H
H
L
L
X
X
X
H
X
X
X
H
H
L
X
X
X
X
L
H
X
X
X
X
L
H
H
H
H
H
H
L
H
X
L
H
L
X
L
X
X
L
X
X
DISABLE CURSOR DISPLAY
X
H
H
H
H
H
l
X
H
H
H
L
H
H
H
H I H
II
X
xl xl x I x I xl xl L
DISPLAY STORED CURSORS
x = DON'T CARE
81
DIGIT
1
3
2
B
B
B
B
E
E
E
A
A
A
B
B
E
E
A
A
B
E
mm
0
R
R
iii
E iii iii
B m m iii
iii iii iii iii
iii E iii iii
R
R
I
CHARACTER SET
,,- ,
~
H
H
l
7
ll::'4
_21----I-_ _ _ _
l
H, H
3
,-,
,
,
:)
~ _~ ~-[-'ily_+-/---Li_(_~_ D~
__
)
h~+'++'~-'_+-'--~~~_-_'~
I
!H l
I
l
I
4
--, I
I
0
-,-,
eu
"
_0
rl
f<' c
C
,'_:,
l_
-,-
I
,
,
I'
1
I
T, ,-- C
~ _U L '
,--
P
u
___'~_-'_~
,--
-'
,--,
! I
\I
!
I
-
I
I
-
T! '
_l -+ u
,,'
lj
'I
I
-1-
O. -
,0_,
,
!
I
!
/1
--
I
__
L
--
,
1\1\",
I I ,,,
i' I '~;
1'-' l_
-~ --71,-r;-lr--~-,
,-,-~I~l~,H-'-O-'-_-'-_l_y___-"I_-_J_Li_'_ lr..~ L~"--l~~
[t""--,-'_
~~
'
..
"OM
CEI
CE2
Bi
CLR
"AM
Cii
CUE
A,
Ao
WR
Internal Block Diagram
'v
I
GND
m,
DL-3416
0"
-4
ill WR CIT CUE A, -
-
on
08
I
DL-3416
0.
0'
DL·3416
03
0'
I I9 19I I5IBUI I IaIIe Ie I B1e19
Bl
DQ-DL
A,
1
DL-3416
~
14
I~
t
B
t
Q
Q
z z
""
t
>
+
Q
z
"
A3
A,
Typical Schematic for 16 Digits
82
J
>
+
Q
z
"
,
f1
I l-'
I
I
___-'-L~
ALL OTHER CODES D'SPLAY BLANK
CE3
Cf4
-:'
-~
.
> >
+
l~
litronix
A Siemens Company
DL·3422
.170',.100" (Nom.) UPPER AND LOWER CASE
4-DIGIT 22·SEGMENT
ALPHANUMERIC Intelligent DisplayTM
WITH MEMORY/DECODER/DRIVER
PRELIMINARY
Physical Dimensions (in inches)
I
"-~=I---- ~~~TBER
AND
IIATE
CODE
Tolerance ± .01 unl.. oth.rwist noted
FEATURES
DESCRIPTION
• 170 Mil/100Mil (Nom.) Upper & Lower Case Letters
The DL 3422 is a four digit display module having 22
segments and a built-in CMOS integrated circuit.
• Wide Viewing Angle ± 50°
The integrated circuit contains memory, ASCII ROM
decoder, multiplexing circuitry, and drivers. Data
entry is asynchronous and can be random. A display
system can be built using any number of DL 3422's
since each digit of any DL 3422 can be addressed
independently and will continue to display the character last stored until replaced by another.
• Close Vertical Row Spacing, .BOO Inches
•
Rugged Solid Plastic Encapsulated Package
•
Fast Access Time, 500 nSEC
•
Full Size Display for Stationary Equipment
•
Built-in Memory
•
Built-in Character Generator
•
Built-in Multiplex and LED Drive Circuitry
•
Direct Access to Each Digit Independently &
Asynchronously
•
TTL Compatible, 5 Volt Power
•
Independent Cursor Function
•
22 Segment for 96 Character ASCII Format
Upper & Lower Case Letters
•
Memory Clear Function
•
Display Blank Function
System interconnection is very straightforward. The
Il1ast significant two address bits (Ao. A1) are normally
connected to the like named inputs of all DL 3422'5
in the system. With two chip enables (CE1, and CE2)
four DL 3422's (16 characters) can easily be interconnected without a decoder.
Alternatively. one-of-n decoder 1C's can be used to
extend the address for large displays.
Data lines are connected to all DL 3422'5 directly and
in parallel. as is the write line (WR). The display will
then behave as a write-only memory.
The cursor function causes all segments of a digit
position to illuminate. The cursor is not a character, however, and upon removal the previously
displayed character will reappear.
Specification subject to change without notice.
83
Pin
1
2
3
4
5
6
7
8
9
10
11
car
n
n
m \.
, , ,
18
17
16
15
1.
. , , , .,
13
n
1011
Fllnction
Gnd
N/C
Bl Blanking
N/C
DO Data Input
01 Data Input
02 Data Input
03 Data Input
04 Data Input
05 Data Input
06 Data Input
Pin
12
13
14
15
16
17
18
19
20
21
22
Function
CE 1 Chip Enable
N/C
CE2 Chip Enable
N/C
ClR Clear
VCC
AO Digit Select
&Digit Select
WR Write
CD Cursor Select
CUE Cursor Enable
OPTO-ELECTRONIC CHARACTERISTICS @25 DC
MAXIMUM RATINGS
OPTICAL CHARACTERISTICS
Voltage, any pin respect to GND .. -.5 to 6.0 VDC
Operating Temperature . . . . . . . . _200 to +65°C
Storage Temperature . . . . . . . . . . _20° to +70°C
Relative Humidity
(non condensing)@65°C . . . . . . . . . . . . 85%
luminous Intensity 8 Segments @ 5 V ... 5 mcd
Off Axis Viewing Angle (Note 1).......•. ±50°
Digit Size .................. 160mils
Spectral Peak Wavelength .. : . . . . . . . . 660 nm
.
DC CHARACTERISTICS
Parameter
_20DC Typ
+65°C Typ
Conditions
ICC 4 digits on (10 seg/digit)
135mA
125mAmax 1
+25°C4
l00mA
Vce = 5.0 V
ICC 4 digits or Cursor 2
160mA
140mA max 1.
120 mA
Vec = 5.0 V
3.7 mA max
lec Blank
VIN =0
~=5.0V
W
200p.A
IlL
.S V
= 5.0V
VIN =.8 V
Vec = 5.0V
max
Vec =4.5V
2.7 V min
3.3 V min
Vr.r. =4.5 V
Vcc - 5.5V
VIL
VIH 3
100p.A
160p.A max
4, Vee = +5.0 VDC ±10%
1. Measured at 5 sec.
2. 60 sec max duration.
3. VCC ~ VIH ~ .0.6 Vec·
TIMING CHARACTERISTICS
AC CHARACTERISTICS
Timing Parameter @ 4.5
TAS
Two
Tw
TDS
TDH
TAH
TeEH
TCES
TClR
Write Cycle Waveforms
V (nanoseconds)
_20°C Typ
+25DC Min
+65°C Typ
300
50
250
150
50
50
50
300
450
150
300
250
50
50
50
450
15 milliseconds
600
175
425
350
100
100
100
600
c"
CE2
A0 A I
.,.
~
~
I-!
=x1_--
TeES - - '
TAS _ _
TCEH
1_
TAH
x:=
::J
~
J
Two
00-D6 CO
1_
X
TW-J
_I
TIMING MEASUREMENT
VOLTAGE LEVELS
Tos
:
, - T DH
-=x==x
-
4 VOLTS
2 VOLTS
o VOLTS
Note 1: "Off Axis Viewing Angle" is here defined as: "the minimum angle in any direction from
the normal to the display surface at which any part of the segment in the display is not
visible".
Note 2: This display contains a CMOS integrated circuit. Normal CMOS handling precautions should
be taken to avoid damage due to high static voltages or electric fields.
Note 3: Unused inputs must be tied to an appropriate logic voltage level (either V+ or V-I.
Note 4: Warning - Do not use solvents containing alcohol.
84
>C
___.1
.!!2!be cleared by the ClR signal.
lOADING DATA
Setting the chip enables (CE1, CE2) to their true
state will enable data loading. The desired data code
(00·06) and digit address (Ao, A,) should be held
stable during the write cycle for storing new data.
Data entry may be asynchronous and random. (Digit 0
is definad as right hand digit with A, =Ao =0.)
Clearing of the entire internal four·digit memory can
be accomplished by holding the clear (ClR) low for
one complete display multiplex cycle, 15 mS minimum.
For those users not requiring the cursor, the cursor
enable signal (CUE) may be tied low to diseble
display of the cursor function. A flashing cursor can
be re,alized by simply pulsing CUE. If cursor has been
loaded to any or all positions in the display, then
CUE will control whether the cursor(s) or the char·
acters; appear. CUE doas not affect the contents of
cursor memory.
DISPL.AV BLANKING
Blanking the display may be accomplished by loading
a blank or space into each digit of the display or by
using the (Bl) display blank input.
lOADING CURSOR
Setting the chip enables (CE1, CE2) and cursor
select (CU) to their true state will enable cursor load·
ing. A write (WR) pulse will now store or remove a
cursor into the digit location addressed by AO, A, ;
as defined in data entry. A cursor will be stored if
DO = 1; and will be removed if DO =O. Cursor will
Setting the (Bl) input low doas not affect the con·
tents of either data or cursor memory. A flashing
display can be realized by pulsing (Bl).
TYPICAL LOADINO OATA STATE TABLE
I[
CEI m CUE llI1 Wlf t:t:lf
H
H
H
H
H
H
H
H
H
H
0
H
H
H
X
X
X
X
X
X
L
L
H L
H L
L
L
L
L
L
L
L
L
L
L
X
X
X
L X
X
X
X
X
X
H
X
X
H
H
H
H
H
H
X
X
H
L
X
X
H
L
L H
L X
L H
X
H H
X H
X H
X H
X H
H H
L H
L H
L 11
L H
H H
L H
X L
L H
AI AO 08 D6 D4 03 DZ 01 DO
PREVIOUSLY LOADED DISPLAY
X
X
X
X
X
L
L
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
)(
)C
X
lC
X
X
X
X
II
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
x:
H L L L H L H
L
H
H L H L H L H
L
H L L H H L L
H
H L L L L H L
BLANK DISPLAY
H
HILI L I LI HI HI H
CLEARS CHARACTER DISPLAY
SEE CHARACTER CODE
X
3
0
0
0
0
0
0
0
0
0
DIOIT
Z 1
R
R
R
R
II
II
R
R
L
B L
E
E
E
E
E
E
E
U
U
U
0
Y
Y
Y
Y
Y
'y
E
E
E
E
OiL I U I E
SEE CHARACTER
SET
X• DDN"T CARE
LOADING CURSOR STATE TABLE
I[
H
H
H
H
H
H
H
H
H
H
CElmCUE llI1 Wlf t:t:lf
X
X
X
X
H
H
H
H
H
L
L
L
L
L
X
X
H L
X
X
L
H
H
H
H
H
H
L
L
H
X
X
L
L
L
L
L
X
L
X
H
H
L
L
L
L
L
H
L
H
H
H
H
H
H
H
H
H
H
H
AI AO
De
D6 D4
03
DZ
01
DO
PREVIOUSLY LOADED DISPLAY
DISPLAY PREVIOUSLY IITORED CURSORS
X X X X X X H
L L
X X X X X X H
L H
H L
X X X X X X H
H H
X X X X X X H
H L
X X X X X X L
DISABLE CURSOR DISPLAY
HIH II xlxlxlxlxlxlL
DISPLAY STORED CURSORS
X • DDN"T CARE
85
3
B
B
B
B
B
DIOIT
Z 1
E
E
E
E
0
A R
A R
A II
1111
1111 II
II II II II
II E I I .
B E A R
B E A R
B E II ..
I
CHARACTER SET
DI
D2
D3
D11D51M
L
L
L
L
H
L
L
L
L
H
0
I
,
L H L 2
L H H 3
H L L •
H L H 5
H H L •
H H H 7
L
L
2
H
H
L
L
H
L
H
H
H
L
L
H
H
H
H
L
•
3
L
L
L
•
5
n
.1
I
-,
OJ
,
P
lY
,
l!
P '1.
1~la
L
L
L
L
H
H
H
H
L
L
L
H
L
L
H
H
H
H
H
H
H
H
H
H
H
H
8
C
D
E
F
L
.H
H
8
9
J
" f ~ % ~y ,
0
J
u,
2Il h-'
5 6 , 8 J
rc:rI ..u L.
,-,
H
7
/
I
U
L
L·
L
"(I'll
F?
b
r
C.J
Tl
JJ
T
, u, ,
C
d
I
.Ie
IG' e16 B ..r .fj;
r
LJ
.,/
,/
I I
V\I
£:
f
IZ
U
/! g ~ S S
,-
r· ,--,
, I
.J..
V
\/
/\
I
9 h
,/\/
V
Q
[
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II
.'
•
*
I
U
7
t_
,
.'
l
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'/
'/
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I-(
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r
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'-
..
--.-
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..
m
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k
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I
8
Internal Block Diagram
DO-1!6
CLR----~~~------++---L--~~~--L---~~--~
WR
CE2--~--~E~-------t+---------t+--------~r_------~
CE2
arr __~--C~E~l-----__~----------r_--------~
CEl
Typical Schematic for 16 Digit System
86
r1
LJ
",,
\
I
,
-J
-~
"" ,,""
I
/
/
I"U
litronix
IDA-2416 Series
A Siemens Company
DL-2416 Intelligent DlsplayTM ASSEMBLY
PRELIMINARY
I
FEATURES
• Complete Alphanumeric Display Assembly Utilizing
the DL-2416
• Built-in Multiplex and LED Drive Circuitry
• Built-in Memory
• Built-in Character Generator
• Displays 64 Character ASCII Set
The IDA-2416 Series Assembly is an extension of the
very easy-to-use DL-2416 Intelligent DisplayTM. This
product provides the designer with circuitry for
display maintenance. It also minimizes interaction
and interface normally required between the user's
system and a multiplexed alphanumeric display.
•
Direct Access to Each Digit Independently
•
Display Blank Function
The assembly consists of DL-2416's in a single row
together with decoder and interface buffers on a single
printed circuit board. Each DL-2416 provides its
own memory, ASCII ROM character decoder, multiplexing circuitry, and drivers for its faur 17-segment
LED's.
• Memory Clear Function
• Cursor Function
• Choice of 16 or 32 Character Display Length
(Other lengths optional)
• Single 5_0 Volt Power Supply
Intelligent Display Assemblies can be used for applications such as data.terminals, contr.o"ilers, instruments,
and other products which require an easy to use alphanumeric display.
• TTL Compatible
• Easily Interfaced to a Microprocessor
• Tri-State or Open-Collector Input Circuitry
• Schmitt Trigger Inputs on Control Lines
Description
Part Number
IDA-2416-16
Single Line 16 Character Alphanumeric Display Utilizing the DL-2416
IDA-2416-32
Single Line 32 Character Alphanumeric Display Utilizing the DL-2416
IDA-2416-XX-YY
Single Line Alphanumeric Display Utilizing the DL-2416 Display
XX - indicates number of characters (groups of four) from 16 to 40
YY - options or specials versions
(consult factory for more information)
87
System Overview
writes the cursor. A "0" on 00 removes the cursor.
The change occurs during the next write pulse per
the timing diagram.
The Intelligent Display Assembly offers the designer
a choice of either 16 or 32 alphanumeric characters
(the IOA-2416-16 and IDA-2416-32, respectively),
and operates from just a +5-V supply. Based on the
previously introduced Litronix OL-2416 fourcharacter intelligent display, the IOA-2416 adds all
the support logic required for direct connection to
most microprocessor buses. The system interface
takes place through a 26-pin connector, which has
available on it the data and address lines as well as the
control signals needed. Two additional connectors
are included on the IOA-2416 - one of them is used
for the power .and ground connections, and the other
is used to implement display enable selection.
CLR (Clear, active low): When held low for one dis·
play multiplex cycle (see OL·2416 data sheet for
more information) of 15 ms, this line will cause all
stored characters in the display, except for the cursor,
to be cleared. CIJf is active regardless of address or
display enable lines, The CLR input drives a schmitt·
trigger.
oU to DE4 (Display Enable, active low): There are
four jumper selectable lines, anyone of which can be
selected to provide one of four board addresses that
can be used when multiple 10As are built into a system. When low, this line enables the selected display
to permit qata loading. The display enable input
drives a schmitt-trigger.
Address lines A0 to A4 are set up so that the rightmost character is the lowest address. The left·most
character is the highest address. Data lines are set up
so that 00 is the least significant bit and 06 is the
most significant bit.
System Power Requirements
Operating from a single +5-V power supply, the
IDA-2416-16 requires a typical operating current of
450 mA with eight of the segments lit on each
character. For the 32 character display, the current
increases to 850 mA, typical. For the worst-case
condition with all segments lit, the 16 character
display draws 650 mA and the 32 character display
requires'1250 mA. With the display blanked, the
board circuitry draws about 70 mAo
Using the Display Interface
Through the use of memory-mapped I/O techniques,
the IDA can be treated almost like a memory loca·
tion - supply the data, address and proper control
signals and the characters appear, with each character
location independently addressable. The basic signal
flow sequence to load a character would start with
the address lines going to the desired address while
the CLR and BL lines are high to permit the data to
be loaded in and displayed. After the address has
stabilized, the data can change to the desired values
(including the cursor). After the data have stabilized,
the WR pulse is started, and must remain low for at
least 200 ns. Signals must be held stable for 75 ns,
minimum, after the rising edge of the WR pulse to
ensure correct loading, while the addresses must be
stable for 650 ns preceding the same rising edge of
the WR pulse. See the timing diagram for a pictorial
explanation.
Display Interface
The display interface available on the 26-pin connector consists of seven data lines (00 to 06), five
address lines (A0 to A4), four display-enable lines
(iJ'El to DE4), several unused pins, and various control signals. All address, data, and control lines have
either pull-up or pull-down 1K ohm resistors.
BL (Blanking, active low): When this line is pulled
low, it causes the entire IDA display to go blank
without affecting the contents of the display memory on the 0 L-2416s. BL is active regard less of
address or display enable lines. A flashing display can
be realized by pulsing this line.
WR (Write, active low): To store a character in the
display memory, this line must be pulsed low for a
minimum of 200 ns. See timing diagram for timing &
relationships to other signals. The WR input drives a
schmitt-trigger.
Enable Selection
For board enable (the orr through DE4lines) the
user can choose anyone of the four enable signals he
has provided on the cable. This signal will be used to
provide a master enable to each IDA. All that need be
done is to insert the shorting plug in the appropriate
position on the pins provided. This allows the user to
make the system display the same information on
two or more different 10As or display different
information on each of up to four groups of IDA's.
CUE (Cursor Enable, active high): When high, this
line permits the curs.or to be displayed, and when
brought low, it disables the cursor function without
affecting the stored value. CUE is active regardless of
address or display enable lines. A flashing cursor can
be created by pulsing the CUE line low.
CD' (Cursor Select, active low): The cursor function
(character with all segments lit) is loaded by selecting
the digit address and holding CU true. A "1" on 00
88
IDA-2416 Series
Maximum Ratings
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . 6.0V
Voltage applied to any input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to VCC +0.5 VDC
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20 to +65°C
. . . . . . . . . . . . . . . . . . . . . . .. -20 to +70oC
Storage Temperature. . . . . . . . . . . . . . . .
Relative Humidity (non condensing) @ 65°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 85%
Optoelectronic Characteristics @ 25°C
Symbol
Parameter
Supply Current/Digit
Min
Typ
Max
Units
25
Icc
Test Conditions
mA
Vee = 5.0 V (8 Segments/Digit}
Total (lDA-2416-16)
IcC
650
mA
Vee = 5.0 V (All Segments/Digit}
Total (I DA-2416-32)
Icc
1250
mA
Vee = 5.0 V (All Segments/Digit)
Supply Voltage
Vee
4.75
I nput Voltage - High
(All inputs)
V,H
2
Input Voltage - Low
(All inputs)
V'L
I nput Current - High
(All inputs)
Input Cu rrent - Low
(All inputs)
5.00
V
5.25
V
Vee=5.0V ± .25 V
0.8
V
Vee=5
I'H
40
/LA
Vee = 5.5 V, V I = 2.4 V
I'L
2.2
mA
Vee = 5.5 V, V I = 0.4 V
Vee = 5.0 V (8 Segments/Digit}
Luminous Intensity
Average Per Digit
Peak Wavelength
Iv
0.5
mcd
Apeak
660
nm
±45
Deg
Viewing Angle
Vertical & Horizontal From
Normal To Display Plane
Switching Characteristics @ 5 V
Parameter @ 25° C
Symbol
Min
Units
Tw
TAS
Tos
Two
TOH
TAH
TeLR
200
650
650
200
75
75
15
nS
nS
nS
Write Pulse
Address/DE Setup Time
Data Setup Time
Write Setup
Data Hold Time
Address/DE Hold Time
Clear Time
TIMING CHARACTERISTICS
WRITE CYCLE WAVEFORMS
DEl. DE2
ffi. DE4
I
t---------~--~~
I
A~ A4
~--__f.-~*=
:::J
I
=>t
I
I
J
%
TAS
WR
"
~TWD-L=
I
D~-D6. CD
=t
TIMING MEASUREMENT
VOLTAGE LEVELS
TAH
I
Tw
TDS
1.
~4VOLTS
~2VOLTS
o VOLTS
89
nS
nS
nS
mS
I
Physical
~------- :::~ l:~::~::::~~:
.25
TYP.
.154 DIA.
TYP.
~
~
RECOMMENDED MATING CONNECTOR
Function
Type
Suggested Mfg.
i.b.J2
Control/Data
26·Pin Ribbon
BERG PIN 65496·013
&.J3
Power
Molex
AMP PIN 87066-4
Connector
PIN
'n'
) !:
26
25
Note:
ill
R£SISTOR PART OF PACK Rl 11K)
IE
RESISTORPARTOfPACKR2(lK)
I)
RESI$TORI'IlATQfPACKR3(1K)
5
U"USEDPINSOfn"RE.
7\0,12.14"11016
U4
o-!-
105PIN2
o-L-
104PIN2
FUNCTION
'-_...r>'--'
-
FUNCTION
A2 ADDRESS LINE
DE4 DISPLAY ENABLE
A3 ADDRESS LINE
DE3 DISPLAy ENABLE
A4 ADDRESS LINE
DE1 DISPLAY ENABLE
NO CONNECTION
DE2 DISPLAY ENA8LE
00 DATA LINE
NO CONNECTION
01 DATA LINE
NO CONNECTION
02 DATA LINE
J2-14
J2-15
J2-16
J2-17
J2-18
J2-19
J2-20
J2-21
J2-22
J2-23
J2-24
J2-25
J2-26
NO CONNECTION
06 DATA LINE
NO CONNECTION
04 DATA LINE
CUE CURSOR ENABLE
05 DATA LINE
CU CURSOR SELECT
A0 ADDRESS LINE
CLR CLEAR
A1 ADDRESS LINE
WR WRITE
03 DATA LINE
BL 8LANKING
J3-1
J3-2
GND
VCC
J3-3
J3-4
VCC
GND
~103PIN2
o-l-o-L-
PIN
J2-1
J2-2
J2-3
J2-4
J2-5
J2-6
J2-7
J2-8
J2-9
J2-10
J2-11
J2-12
J2-13
'D2PIN2
.DIPIN2
IOOPIN2
90
LED LAMPS
Package
Type
and
Spacing
Luminous
Viewing
Package Outline
Color
Red
High
Efficiency
Red
T1%
Smm
112.2mm
Top of
Lens to
standoff)
Min. W'
Leads
Yellow
Green
=~
Red
High
Efficiency
Red
T1%
Smm
(11.Smm
Top of
Yellow
Lens to
standoff)
Min. Y:z"
Leads
Green
T1%
Smm
1" leads
~~
Red
Orange
Tl%
Smm
1" leads
No
Standoffs
~~
Red
Yellow
Green
T1%
Smm
Low
Profile
Min. Y:z"
Leads
~
e NEW TYPES TO BE PHASED IN
~}~i~iency
Red
Part Number
LDSOA
LDSO-1
LDSO-2
LDS2C
LDS2CA
eCQVS1 F
eCQVS1G
eCQVS1H
eCQVS1J
LDSSC
LDSSCA
eCQVS3F
eCQVS3G
eCQVS3H
eCQVS3J
LDS7C
LDS7CA
eCQVSSG
eCQVSSH
eCQVSSJ
eCQVSSK
LD41A
LD41-1
LD41-2
eCQV20-3
eCQV20-4
LDS2-1
LDS2-2
eCQV21-4
eCQV21-S
eCQV21-S
LDSSA
LDSS-1
LDSS-2
eCQV23-4
eCQV23-S
eCQV23-S
LDS7A
LDS7-1
LDS7-2
eCQV2S-3
eCQV2S-4
eCQV2S-S
eCQV2S-S
RL-2000
RL-4403
RL-48S0
RL-S054-1
RL-SOS4-2
Lens
Red
Diffused
Red
Diffused
±12°
Yellow
Clear
Green
Clear
Red
Diffused
Yellow
Diffused
Diffused
Red
Diffused
Red
Diffused
Yellow
Diffused
±2S0°
±3So
±35°
Green
Diffused
Red
Diffused
Yellow
CQX33-1
CQX33-2
Yellow
Diffused
Green
CQX13-1
CQX13-2
White
Diffused
91
±35°
±10°
Diffused
RL-SOS3-1
RL-SOS3-2
RL-SOS3-3
RL-SOS3A
YL-45S0
YL-48S0
GL-48S0
GL-49S0
CQX23-1
CQX23-2
±35°
Green
Orange
"OL-30-3
"OL-30-4
Half
Anglo
±70°
Intensity
(mcd)
>1.0
2.0-4.0
>3.2
1S-30
9.0-18
10-20
1S-32
2S-S0
>40
10-20
S.0-12
10-20
1S-32
2S-S0
>40
20-40
12-24
1S-32
24--S0
40-80
>S3
>.3
1.0-2.4
>2.0
1.0-2.0
>1.S
1.2-2.4
>2.0
1.S-3.2
2.S-S.0
>4.0
>.S
1.0-2.0
>1.S
1.S-3.2
2.S-S.0
>4.3
>.S
2.0-4.0
>3.2
1.0-2.0
1.S-3.2
2.S-S.0
>4.0
>1.S
>.8
.8 Typ.
>1.0
>2.0
>3.0
>S.O
1.0-2.0
1.S-3.2
>2.S
>0.3
>1.0
1.S Typ.
1.0 Typ.
>1.0
1.8-3.S
>2.8
1.8-3.S
>2.8
(rnA)
20
Max
Fwd
Current
(rnA) Pago
97
100
10
99
20
10
SO
101
20
10
103
20
97
100
10
99
20
r-10
101
SO
20
103
20
10S
100
r---109
10
20
SO
111
20
100
107
113
10
20
20
SO
SO
11S
119
1.8-3.S
>2.8
"NOT RECOMMENDED FOR NEW DESIGN - PHASING OUT
I
LED LAMPS
Package
Type
and
Spacing
Package Outline
Color
Part Number
Viewing
Luminous
Half
Angle
Intensity
(mcd)
Lens
Max
Fwd
Current
(mA)
(mA)
Page
I
I
~
4mm
Low
Profile
No
Standoffs
;:::::;
Red
*RL-2
High
CQV36-3
CQV3,6-4
CQV36-5
CQV38-3
CQV38-4
CQV38-5
CQV39-3
CQV39-4
CQV39-5
LD80A
LDSO-1
LDSO-2
LDS2A
LDS2-1
LDS2-2
LDS6A
LDS6-1
LDS6-2
LDS7A
LDS7-1
LDS7-2
CQV56-2
CQV56-3
CQV56-4
CQV5S-2
CQV5S-3
CQV5S-4
CQV59-2
CQV59-3
CQV59-4
CQV16-2
CQV16-3
CQV16-4
CQV1S-2
CQV1S-3
CQV1S-4
CQV19-2
CQV19-3
CQV19-4
CQV26-2
CQV26-3
CQV26-4
CQV2S-2
CQV28-3
CQV2S-4
CQV29-2
CQV29-3
CQV29-4
LD602-2
LD602-3
LD602-4
LD606-2
LD606-3
LD606-4
LD607-2
LD607-3
LD607-4
Efficiency
Red
5mm
Rec-
~
tangular
Yellow
Green
Red
~
5mm
Rounded
Raetangular
High
Efficiency
Red
Yellow
Green
High
Efficiency
Red
5mm
Cylindrieal
,I,
=~
~
Yellow
Green
High
Efficiency
Red
Square
bd
=~
=
'
Yellow
Green
High
Efficiency
Red
Tri-
angular
~
k)
Yellow
Green
High
Efficiency
Red
Arrow
0
=
~
Yellow
Green
"NOT RECOMMENDED FOR NEW DESIGN-PHASING OUT
92
Red
Diffused
t30·
Red
Diffused
Yellow
Diffused
Green
Diffused
Red
Diffused
Yellow
Diffused
Green
Diffused
Red
Diffused
Yellow
Diffused
Green
Diffused
Red
Diffused
Yellow
Diffused
Green
Diffused
Red
Diffused
Yellow
Diffused
Green
Diffused
Red
Diffused
Yellow
Diffused
Green
Diffused
±50°
1.2 Typ
1.0-2.0
1.6-3.2
>2.5
1.0-2.0
1.6-3.2
>2.5
1.0-2.0
1.6-3.2
>2.5
>.6
1.0-2.0
>1.6
>.6
1.0-2.0
>1.6
>.6
1.0-2.0
>1.6
>.6
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.0-2.0
>1.6
.63-1.25
1.CJ,-2.0
>1.6
100
117
60
123
100
t---127
:--20
131
r--
60
135
r--
139
f---
143
LED LAMPS
Package
Luminous
Typo
Viewing
and
Spacing
Package Outline
Color
Red
Tl
3mm
High
Efficiency
Red
ID
I
%"min
Leads
90 MIL
Lead
Spacing
Yellow
Green
T1
3mm
1" Leads
100 MIL
Lead
Spacing
T1
3mm
1" Leads
50MIL
Lead
Spacing
T13mm
1" Leads
50MIL
Lead
Spacing
No
Standoff
Tl
3mm
1" Leads
75MIL
Lead
Spacing
Flangeless
~~
Red
Red
I
'~
..
===---i
Orange
Yellow
Green
~~
Red
Miniature
Axial Lead
High DOmj
Lens
o=G=
aNEW TYPES TO BE PHASED IN
LD30A
LD30·1
LD30-2
LD30-3
.CaVl0-3
.CaVl0-4
LD30C
.CaV30A
.CaV30B
.CaV30C
LD32-1
LD32-2
.CaVII-4
.CaVII-5
.CaVII-6
LD32C
.CQV310
.CQV31E
LD36A
LD36-1
LD36-2
.CQVI3-4
.CQVI3-S
.CQVI3-6
LD36C
.CaV33D
.caV33E
LD37A
LD37-1
LD37-2
.CQV1S-3
.CQVI5-4
.CQV1S-5
.CQVI5-6
LD37C
.CQV35D
.CaV35E
RL-44BO
RL-4480-1
RL-44BO-2
RL-44BO-5
Red
Diffused
±3So
Glass
Clear
±25'
Red
Diffused
±35°
Red
Clear
Yellow
Diffused
Yellow
Clear
Green
Diffused
Glass
Clear
±2S'
±35°
±2So
±3So
±2So
Red
Diffused
(mcdl
>0.3
1.0·2.4
2.0-4.0
>3.2
1.0-2.0
>1.6
>1.0
1.0.2.0
1.6-3.2
>2.5
1.2-2.4
>2.0
1.6-3.2
2.5-5.0
>4.0
>2.5
4.0-B.0
>6;3
>.6
1.0-2.0
>1.6
1.6-3.2
2.S-S.0
>4.0
>2.0
4.0-B.0
>6.3
>0.5
2.0-4.0
>3.2
1.0-2.0
1.6-3.2
2.S-S.0
>4.0
>4.0
4.0-B.0
>6.3
>0.3
>1.0
>2.0
0.8 Typ.
Orange
Diffused
Yellow
Diffused
Green
Diffused
'RL-T1
Red
Diffused
>0.3
water clear
>0.3
>0.3
O.B Typ
>2.0
>O.B
2.0 Typ
1.0 Typ
Green
GL-56
93
Red
Diffused
±35'
Red
Diffused
Dm~~
Green Dif.
Max
Fwd
Currant
0.5
1.0
>2.0
0.8 Typ.
>1.5
>4.0
>1.0
1.6 Typ.
>O.B
1.0 Typ.
Yellow
Red
Lens
Intensity
RL-209A
RL-209-1
RL-209-2
RL-4484
'OL-31-2
'OL-31-4
YL-212
YL-4484
GL-211
GL;4484
RL-50
RL-50-01
RL-54
RL-55
RL-55-5
YL-56
Miniature
Axial
Lead
Part Number
Half
Angle
(mAl
(mAl
Page
20
100
147
10
20
149
10
20
~
10
lSI
20
10
60
r--20
153
40
155
157
20
40
10
r--159
r--161
r--163
20
20
40
20
40
165
-
167
169
170
20
40
172
'NOT RECOMMENDED FOR NEW DESIGN - PHASING ~Ui
I
LED LAMPS
Package
Type
and
Spacing
Miniature
Radial
Lead
100 MIL
Lead
Spacing
2 Diode Array
3
4
5
6
7
8
9
10
2 Diode Array
3
4
5
6
7
8
9
10
2 Diode Array
3
4
5
6
7
8
9
10
Sub
Miniature
lmm
Package Outline
~
A
Color
Red
Green
Yellow
Red
~
Green
Yellow
A
High
Efficiency
Red
Part Number
LD461
LD471
LD481
LD462
LD463
LD464
LD465
LD466
LD467
LD468
LD469
LD460
LD472
LD473
LD474
LD475
LD476
LD477
LD478
LD479
LD470
LD482
LD483
LD484
LD485
LD486
LD487
LD488
LD489
LD480
Lens
White
Diffused
Green
Diffused
±50°
Green
±50°
Yellow
Diffused
Yellow
LD161
Yellow
Diffused
Green
LD171
White
Diffused
(mcd)
(rnA)
>0.6
(rnA)
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
>0.6
Page
35
20
>0.6
Diffused
Red
Diffused
Current
25
White
Diffused
Max
Fwd
Luminous
Intensity
>0.6
Yellow
Diffused
LD121
94
Viewing
Half
Angle
20
173
-
175
177
35
173
25
175
25
177
25
179
0.63
±30°
0.63
0.63
10
INTEGRATED CIRCUITS LED LAMPS
T1%
Bjeotor
Rectangle
Bieotor
Square
Bieotor
Triangle
Bieotor
~~
"§~
=
.
~~
=
.
[!]
bd
~~ ~
Red
and
Green
Red
and
Green
Red
and
Green
Red
and
Green
LD100-3s
LD100-3t
LD100-4s
LD100·4t
LD10Cl-5s
LD100-5t
LD110-2s
LDll0-2t
LD110-3s
LDll0-3t
LD110-4s
LDll0-4t
LD'111-2s
LD111-2t
LD'111-3s
LD111-3t
I,Dlll-4s
LDlll-4t
LD112-2s
LD112-2t
L0112-3s
LD112-3t
LD112-4s
LD112-4t
colorless
colorless
T1%
Flashing
Lamp
Tl%
Current
Regulated
I
Tl
Current
Regulated
20
60
193
±50·
0.63-1.25
0.63-1.25
1.0-2.0
1.0-2.0
>1.6
>1.6
20
60
195
60
197
60
199
colorless
±50°
colorless
±50°
0.63-1.25
0.63-1.25
1.0-2.0
20
1.0-2.0
>1.6
>1.6
0.63-1.25
0.63-1.25
1.0-2.0
20
1.0-2.0
>1.6
>1.6
Luminous
Package
Type
and
Spacing
±50°
1.0-2.0
1.0-2.0
1.6-3.2
1.6-3.2
>2.5
>2.5
Package Outline
~~
""""\
Viewing
Half
Angle
Color
Part Number
lens
Red
FRL-2000
FRL-4403
Red
Diffused
±35°
RLC200
Red
Diffused
±3So
~~
Red
~~
Red
RLC201
RLC210
95
Red
Diffused
±50°
(mcdl
>0.8
>0.5
Max
(mAl
Fwd
Current
(mAl hge
VF=5V
35
VF=5V
~
24
VF=
12.5V
187
Intensity
185
>0.8
>0.4
VF=6V
>0.1
14
VF=6V VF=11V 191
14
VF=16V 189
I
,h
96
litronix
A Siemens Company
CQY 20 (LD 41) SERIES
LD 50 SERIES
RED T 13/4 LED LAMP
Package Dimensions
.02510.15)
.191&.5'
cav
Dimensions inside parenthesis ara in mm
Dimensions outside parenthesis are in inches
(L041) - (11.11-0..4) .457
LD50
- (12.4-0.4) .488
Maximum Ratings
FEATURES
• Moderately Wide Viewing Angle ±35°
cav 20 (LD 41) Series
•
Narrow Viewing Angle ±12°
LD 50 Series
• T 1% Package Size
• Y,," Minimum Lead Length
• Front Panel Mounting
Snap-in Mounting t;lips Available
Clip/Collar #004-9002 Black
#004-9003 Clear
• I/C Compatible
DESCRIPTION
\
The cav 20 (LD 41) and LD 50 Series
are standard red gallium arsenide phosphide LED solid-state lamps. They both
have red diffused plastic lenses. The
cav 20 (LD 41) offers a wider viewing
angle which is suitable for front panel
indicator applications. The LD 50 Series
"has a narrow viewing angle of ±12° and is
intended for head on viewing or back lit
legends where high brightness of the
cav 21/51 Series (see cav 21/51 Series
Data Sheet) is not requ ired.
Power dissipation (T.mb '" 25°C)
Toto,
Tj
Ptot
5
100
2.0
-55 to +100
100
200
Thermal resistance
Junction to air
RthJlmb
375
Reverse vottage
V.
Forward current
Surge current (t:l: 1",8)
Storage temperature
Junction temperature
IF
I,.
V
rnA
A
°C
°c
mW
K/W
Characteristics (T. mb = 250 C)
Wavelength at peak emission
J.pnk
Dominant wavelength
Adom
nm
665 ±15
645
Half angle
(limits for 50% of luminous intensity Iv)
Cay 20. (LO 41)
L05o.
Forward voltage ifF "" 20 mAl
•
VF
I.
Reverse current (VR '" 5 V I
Rise time
Fall time
Capacitance (VR '" 0 VI
I,
If
Co
J5
12
degree
degree
V
.A
ns
ns
pF
1.6(~2.0)
0.0.1(.10)
5
5
40
Luminous Intensity
Typo
Min
(L041A)
(LO 41-1)
Cay 20.-4
(L041·2)
0..3
1.0.
1.0.
1.6
2.0.
L050A
L050·1
LO 50·2
1.0.
2.0.
3.2
Cay 20.·3
Max
2.0.
2.4
4.0.
Unit
Test Condition
mcd
mcd
mcd
mcd
mcd
20mA
20mA
2DmA
2DmA
2DmA
mcd
mcd
mcd
20mA
2DmA
2DmA
·cav designations are preferred types for new designs and conform
to new International classification standards. LD equivalents
may continue to be delivered during transition period.
Specifications are subject to change without notice.
97
I
CQV 20
Luminou. inteneitv I,
I V, I
LD 50
Luminou. Inteneltv I,
~
~
Lumlnou. inten.ity I"
f (IF)
'!lFI
me'
•"
~,
1I\
\
I
I
II
I,
l,
!
.'
\
\
J
'\.
0&al
LD41
~
6W
&20
&II
III 70)
_A
720l1li
--I,
COV 20 (LD 41)
LD50
".dletion charect.riltic I,•• '" I (<{IJ
Radiation t;:herecterUtit;: I,••
~
fl.)
...
Mex. permiulble forward current
IF
~
I(T)
1/0
I I I
111
I I I
1\ R._,l'lO~
"
1\
60
1\
40
f-
20
IO
f--
b
- -
40
1\
r"\
60
90
lDO
a
e
~r
OF
SO
c
r
0
I'-r
0
,
10'
H-+++--H-+++--H
0.6
0
0
-
f---
to'
L1
II U L4 1.5 \6 t7 1.8 1.9 1JI V
0
10-1
~"
Lumlnou. int.n'"YI:1~'
."
'20
I'.
~
.
, (T...~)
--.,
10°
We"elen"th et peek eml..lon
Ap ••• = fIT.... 1
"- I'.
10'
['\
"- I'.
40
20
""f- f - -
670
~+w""~
"
650
75
-r...
100 DC
~...J-tttt-H-tlt-H-tlt-1-ffitffitl
640
630
50
•
-L'rd "
UI
OR
~'.:
""V
660
1
"
Perm. put.. hendlin, upebllity
lr"'ftl);1''''parameter;T.... =25''C
",,""
60
610
°c
--Tn
A
710
I"-
30 20 10 0 Kl 20 JIIl,{150 1il1O,80
10'V
o
"
50
98
7S
---r...
10011(
~' IPI.
I)"
11'
Mli:
MI~
~I
MIG
101 s
litronix
A Siemens Company
cav 21 (LD52-1/-2)
cav 51 (LD52C/CA)
SERIES
SERIES
HIGH EFFICIENCY RED
T 1314 LED LAMP
Package Dimensions in Inches (mm)
cav 21
(LD 52-1 & LD 52-2)
ClllIod.
cav 51
(LD 52C & LD 52CA)
FEATURES
•
High Light Output
•
Red Diffused Lens
Wide Viewing Angle ±35°
cav 21 (LD 52-1, LD 52-2)
•
Red Clear Lens
High On Axis Intensity ±12°
cav 51 (LD 52C, LD 52CA)
•
T 1% Package Size
•
Yo" Minimum Lead Length
•
Front Panel Mounting
Snap-in Mounting Clips Available
Clip/Collar #004-9002 Black
#004-9003 Clear
•
I/C Compatible
Maximum Ratings
Reverse voltage
V,
Forward current
/,
Surge current (I ~ 1 !15)
Storage temperature
Junction temperature
Power dissipation
'co
Ptol
5.0
60
1.0
-55 to 100
100
200
R'hJ~mb
375
I.peak
645 ± 15
Totor
T,
Thermal resistance
junction to air
The CQV 21/51 Series is a premium high
efficiency light emitting diode lamp fabricated with TSN (transparent substrate
nitrogen) technology. The CQV 21 Series
has a red diffused plastic lens which pro·
vides a large full flooded front radiating
area and wide angle viewing. This makes it
ideal for front panel installation. The
CQV 51 Series has a red clear lens and
narrow viewing angle for the concentration
of intense brightness in a head-on position.
This is particularly desirable for legend
back lighting applications.
I K/W
Characteristics (Tamb = 250 C)
Wavelength at peak emission
Half angle
(limits for 50% of luminous intensity I.)
cav 21
cav 51
ILD 52·1. LD 52·2)
ILD 52C, LD 52CA)
'/
V,
/,
Forward voltage (I F = 20 rnA)
Reverse current (VR == 5 V)
Rise time
DESCRIPTION
V
mA
A
'C
'C
mW
Fall time
Capacitance (VA'" 0 V)
"Co
degree
35
12
2.4
degree
(~3.0)
0.01 I'" 10)
100
100
12
V
"A
ns
pF
Luminous Intensity
Type
Min
Max
Unit
Test Condition
cav 21·4
cav 21·5
1.6
2.5
1.2
4.0
2.0
3.2
5.0
2.4
mcd
mcd
mcd
mcd
mcd
20mA
20mA
lOrnA
20 mA
lOmA
10.0
16.0
9.0
25.0
15.0
40.0
20.0
32.0
18.0
50.0
mcd
mcd
mcd
mcd
mcd
mcd
20mA
20mA
10mA
20 mA
lOmA
20mA
ILD 52·1)
cav 21·6
ILD 52·2)
cav 51F
cav 51G
ILD 52CA)
cav 51H
ILD 52C)
cav 51J
·cav designations are preferred types for new designs and
conform
to new international classification standards. LD 52 equivalents
may continue to be delivered during transition period.
Specifications are subject to change without notice.
99
I
1
'f
%
m
BII"
i+~~~~=::::t=-.t. 90'
:~:r
Max. .,.rmi•• ible forward current
.A
h=1(71
Forward voltage --.!i.....=f(T.meI
Vf u~
Forward volt ••• I, '" It VF)
pF
SO
%
nIT
1 'o
i
lUrm
11111
!1
I
I
!
111
'T
120
'-1
_
100
b ..' ""-'-I-f=."'-"'-1--t
!
1
SO
+
60
30
iii
11
10
v,
j,
I
10
!
,
ri
., III
10
Luminouslnt."llty I. ~',o = I( Tombl
120
~ ....
-f(T_1
r1 I I I I IJ I
680
>~.
I
I
r
670
"
0
65 0
"lO
b----
l- f-r
f-
f-
620i
I
61Of-lllllllJ
15
,
iliA
690
U----i-H---t--IT
10
--v,
W.v.length at peak eml..lon
o.
'/,
h
!
600
25
SO
100
15
100'(
PIo,m. put.. handling ~,.b!I~"C
"=f(tl;~"'param.t8r,
00 . .
1O'~il.Rml
mA
litronix
cay 23 (LD S6A/-1/-2)
cay 53 (LD S6C/CA)
A Siemens Company
SERIES
SERIES
YELLOW T 13/4 LED LAMP
Package Dimensions
cay 23 (lD 56A, lD 56-1 & lD 56'2)
I
cay 53 (lD 56C & lD 56CA)
FEATURES
DImensions insi,de parenthesis are in mm
Dimensions outside parenthesis are in inches
• High light Output
• Yellow Diffused lens
Wide Viewing Angle ±35°
Cay 23 (lD 56A, lD 56-1 & lD 56-2)
Maximum Ratings
• T-1% Package Size
• Y.," Minimum lead length
• Front Panel Mounting
Snap-in Mounting Clips Available
Clip/Collar #004-9002 Black.
#004-9003 Clear
Ptot
R'hJamb
375
K/W
';'pUk
590 '10
nm
degree
degree
V,
35
12
2.41" 3.0)
I,
0.01 (:5010)
t,
t,
C,
100
100
10
"A
ns
V,
ifS
Storage temperature
Tstor
I,
T;
Junction temperature
Power dissipation
Thermal resistance
junction to air
• Yellow Clear lens
High On Axis Intensity ±12°
Cay 53 (lD 56C & lD 56CA)
5.0
60
1.0
-55 to 100
100
200
Reverse voltage
Forward current
Surge current (t~ 1 flS)
V
rnA
A
°c
°c
mW
Characteristics (Tamb = 25°C)
Wavelength at peak emission
Half angle
(limits for 50% of luminous intensity Iv)
cav 23 ILD 56A/-l/-2)
cav 53 ILD 56C/CA)
Forward voltage (IF = 20mA)
Reverse current (VR = 5 V)
Rise time
Fall time
Capacitance (VR = 0 V)
• I/C Compatible
V
ns
pF
DESCRIPTION
luminous Intensity
The Cay 23/53 Series is a premium high
efficiency light emitting diode lamp fabricated with TSN (transparent substrate
nitrogen) technology. The Cay 23 Series
has a yellow diffused plastic lens which
provides a large full flooded front radiating
area and wide angle viewing. This makes it
ideal for front panel installation. The cay
53 Series has a yellow clear lens and
narrow viewing angle for the concentration
of intense brightness in a head-on position.
This is particularly desirable for legend
back lighting applications.
Type
ILD 56A)
cav 23-4
ILD 56-1)
cav 23-5
It.D 56-2)
cav 23-6
cav 53F
cav 53G
ILD 56CA)
cav 53H
ILD 56C)
cav 53J
Min
.6
1.6
1.0
2.5
1.6
4.0
Ma.
10.0
16.0
6.0
26.0
10.0
40.0
20.0
32.0
12_0
50_0
~--~----~-~
Unit
Test Condition
lOrnA
20mA
lOrnA
20mA
lOrnA
20 rnA
mcd
mcd
mcd
mcd
mcd
mcd
20mA
20 rnA
lOrnA
20 rnA
lOrnA
20mA
·CQV designations are preferred types for new designs and conform
to new international classification standards. LD equivalents
may continue to be delivered during transition period.
Specifications are subject to change without notice.
101
----
3.2
2.0
5.0
mcd
mcd
mcd
mcd
mcd
mcd
-- -
-------~------------
.,.
_C~
Lumlnoullntenalty
Ralltive lpectralamiuion 1,01" fo.J
I.~
."
If :
cav 53
lD 56 A/·l/·2
Luminoul intlnllty I, = , (/. I
f(/.)
LuminOUI intlnlity I.
m1 V
Waya'an,th at ~.k ami •• h)n
A~ ••• ~ nT.... I
%
!lIO
I,
1
100
•
""
110
"
A,.ak 580
.......
80
1
570
560
"
80
~ f-
f-
-
l'
50
7S
--I.,.
•
hrm. pula. handllno capability
If· f (t);I' = parameter; Tom. =25"C
.'."":
550
540
40
f--
530
510
10
510
500
15
lOll"
- I...
o
15
"
104
15
--I~.
1000(
-I
0)0[
1251C
litronix
RL·2000
RL·4403
RL·4850
A Siemens Company
RED T13,{a LED LAMP
Package Dimensions In Inches
.094R
.340
I
LOO
MIN
CATHODE
lE.AO
U~S~RTER
..L
,
~V
BOTTOM VIEW
FEATURES
Maximum Ratings
• Choice of Brightness Ranges
Power Dissipation @ 25'C ............................... 100 mW
Derate Linearly from 25'C ........................ -2.67 mW/'C
Continuous Forward Current. . . . . . . . . . . . . . .. . . . . . . . . . . . . . .. 50 rnA
Storage and Operating Temperature. . . . . . . . . . . . .. - 55 'C to + 100 'C
Lead Soldering Temperature
(1/16 in. from case) .............................. 5 sec @ 260'C
Peak Inverse Voltage ...................................... 3.0 V
• Front Panel Mounting
• Large Full Flood Radiating Area
• IC Compatible
• Snap-In Mounting Clip
Opta-Electronlc Characteristics (@ 25 ·C)
DESCRIPTION
The RL-2000, RL-4403 and RL-4850 are
high brightness gallium arsenide
phosphide solid-state lamps with a red
diffused plastic lens which provides a
large full flooded front radiating area
and wide angle viewing. These devices
are easily soldered directly into a PC
board or mounted in a panel with a
snap·in mounting clip.
Test
Parameter
Min Typ
Max
Unit
Condition
Luminous Intensity
RL·2000
1.6
2.5
mcd
IF =20 rnA
RL-4403
0.8
1.2
mcd
IF =20 rnA
0.8
mcd
IF =20 rnA
650
nm
RL-4850
Emission Peak Wave Length
Spectral Line Half·Width
40
Forward Voltage
1.6
2.0
V
IF=20 rnA
Reverse Leakage
0.1
100
"A
VR =3.0 V
nm
Temperature Coefficient
of Forward Voltage
105
-1.8
mV/'C IF=5 to 50 rnA
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
RELATIVE LUMINOUS
INTENSITY VS ANGLE
100
~
~
!
>
80
r--.
"\
60
"
40
~
g
20
20
40
t-...
60
80
NUMBER OF DEGREES OFF ANGLE (%)
LUMINOUS INTENSITY VS
AMBIENT TEMPERATURE
SPECTRAL
DISTRIBUTION
180
160
1.0
"\.
~
14 0
!
120
w
100
g"
80
If
o.
0.6
0.4
0.2
1\
60
-50 -25
0
25
50
75
100
600
AMBIENT TEMPERATURE (OC)
..
100
50
.§
0-
~
a
Ii!«
~
fi'
640
660
680
700
WAVELENGTH - A (nm)
FORWARD CURRENT VS
FORWARD VOLTAGE
;(
620
LUMINOUS INTENSITY VS
FORWARD CURRENT
4.0
l'
~
20
10
5.0
g
2.0
1.0
.50
~
3.0
II
>0-
/
2.0
0-
~
.20
.10
.05
~
:0
0
1.0
z
~
.02
.01
1.1 1.2
1.3
1.4
1.5
1.6
1.7
1.'
I
10
FORWARD VOLTAGE (VI
20
30
40
50
FORWARD CURRENT - IF (rnA)
Mounting Information
The clip mounts in a .250" dia. hole and fits up to .125" panel thickness. A
plastic collar is provided which fits over the back of the clip to lock the LED
securely against the panel.
BLACK CLIP AND COLLAR: 004-9002
CLEAR CLIP AND COLLAR: 004-9003
106
litronix
RL-5053 SERIES
A Siemens Company
RED, T13f4, LED LAMP
Package Dimensions in Inches (mm)
303
200
232
m : ( 7 . 7 0 )(S.DS)
(S.90)
(4.90) t(s.70j
100 ,026
254) (0.65)
~
.295
r (0.50)
m-----=:
- =iT'
r-:gT:""t=
I
-+
('609)~ ~HODE
(
,193
.224
,~\
.i...c!97
~
024'"
1.08
(1.50)
C
.3.46
r-i~~:;~
i:'~~i
1,00
'
(:406)11-
.327
,016
Maximum Ratings
FEATURES
•
•
1 Inch Leads - No Standoffs
Large Full Flood Radiating Area
•
Fou r Brightness Groups
• IC Compatible
• Snap-in Mounting Clip available for
easy panel mounting_ Black PIN 004-9002
Clear PIN 004-9003
Power Dissipation @ 25°C
Derate Linearly from 25°C .
Continuous Forward Current . . . .
Recurrent Peak Forward Current
(1lLsec pulse@.I%dutycycle)
Storage & Operating Temperature
Lead Soldering Temperature
(1/16 in. from case) .
Peak Inverse Voltage . . . . . . .
The RL-5053 series is a Gallium Arsenide
Phosphide solid state lamp with a red
diffused plastic lens which provides a
large full flooded front radiating area and
wide angle viewing. These devices are
easily soldered directly into a PC board
or mounted in a panel with a snap-in
mounting clip.
. . . 5A
• . . . . . -55 to +100°C
5 sec@ 260°C
· . . . . 5.0V
Opto-Electronic Characteristics (at 25°C)
Parameter
DESCRIPTION
· .•• 200mW
· -2.67 mW/"C
100 mA
Luminous Intensity.
RL-5053-A.
RL-5053-1.
RL-5053-2.
RL-5053-3.
Emission Peak Wavelength.
Spectral Line Half-Width.
Half Angle . . . . . . . . . .
Forward Voltage . . . .
Reverse Leakage. . . . . . .
Min
Typ
0.3
1.0
1.6
2.5
Max
Test
Condition
IF=20mA
2.0
3.2
650
40
35
1.6
.01
665
2.0
10
Specifications subject to change without notice.
107
Unit
mcd
nm
nm
degree
I F =20mA
V
V R = 5.0 V
ILA
I
TYPICAL OPTO·ELECTRONIC CHARACTERISTIC CURVES
RELATIVE LUMINOUS
INTENSITY VS ANGLE
100
~
~
80
>-
I
~
" I"
\
60
\
40
>-
g
20
40
20
60
80
NUMBER OF DEGREES OFF ANGLE (%)
LUMINOUS INTENSITY VS
AMBIENT TEMPERATURE
180
,--,---,-,---r--.,.-..,
160
f-"-"<1I---+-+-+--+---l
SPECTRAL
DISTRIBUTION
1.0
~
0.8
140~m
120t==+=
~
06
l00~g
>
0.4
g
02
~
1\
~
80
60
~50
-25
0
25
50
75
o
100
600
AMBIENT TEMPERATURE ( C)
,
100
50
~
>-
z
~
~
3
0
~
4
~
5'
I,g
20
10
50
~
2.0
1.0
50
~
20
10
05
~
~
0
z
"3
m
01
11 1.2
1.3
1.4
15
1.6
1.7
640
660
680
700
WAVELENGTH - II (nm)
FORWARD CURRENT VS
FORWARD VOLTAGE
"
620
1.8
FORWARD VOL lAGE (V)
LUMINOUS INTENSITY VS
FORWARD CURRENT
24
0
1.8
/
15
12
V
09
I
06
03
/
T 1 251e
21
I
10
20
30 40
50
FORWARD CURRENT
60
70
80
IF (rnA!
Mounting Information
The clip mounts in a .250" dia. hole and fits up to .125" panel thickness.
A plastic collar is. provided which fits over the back of the clip to lock the LED
securely against the panel.
BLACK CLIP AND COLLAR: 004·9002
CLEAR CLIP AND COLLAR: 004·9003
108
litronix
RL·5054·1
RL·5054·2
A Siemens Company
RED T1 % LED LAMP
Package Dimensions in Inches
.094R
.340
~l
:hCATHODE
toO
MIN
SH)RTER
.L
LE.AD
I
1E I I
U-+---T-
1T
~JOO~
BOTTOM VIEW
FEATURES
•
RL·5054-1 -
1 mcd Min at IF= 10 mA
•
RL·5054-2 -
2 mcd Min at IF = 10 mA
•
High Intensity Spot Light for Back
LIghting a Transparent Panel
•
Illuminates a 'I." Diameter Circle
•
One Inch Leads
•
IC Compatible
•
Versatile Mounting on P.C. Board
•
Snap In Mounting Clip for Panel
Mounting
•
Replacement for
MV5054-1/MV5054-2
DESCRIPTION
The R L-5054-1 /R L-5054-2 is a very bright
Gallium Arsenide Phosphide solid state
lamp in a red epoxy package that is designed
to illuminate a 1/4" circle. Its high intensity
narrow on axis beam is ideal for back
lighting applications. It is not recommended
for general purpose front panel installation
where the wide angle R L-4403 is particularly
well suited.
Maximum Ratings
200mW
. . . . -2.67mWrC
. . . . . . 100mA
-5S Q C to +100°C
Power Dissipation @ 25° C Ambient
Derate Linearly from 25°C .. .
Continuous Forward Current . . . . . .
Storage and Operating Temperature ..
Lead Soldering Temperature
(1/16 in. from casel ..
Peak Inverse Voltage.
.. 5sec@260"C
. . . . . . . . . . . 3V
Opto-Electronic Characteristics (at 25°C)
Test
Parameter
Min
Typ
1
2
2
2.5
650
40
1.6
0.1
35
50
24
Max
Unit
Condition
mcd
mcd
nm
nm
V
IF = 10mA
IF = 10mA
Luminous Intensity
RL·5054-1
RL·5054·2
Emission Peak Wavelength ..
Spectral Line Half-Width . . .
Forward Voltage
Reverse Leakage
Capacitance ..
.....
Rise and Fall Time
Viewing Angle (Total)
... .
2.0
10
"A
pF
ns
IF = 20mA
VR =3V
V=O
50n System
deg .
Between
50% Intensity
Points
Illumination (Circle Dia.)
.250
in.
Measured From
End of Lens
Specifications subject to change without notice.
109
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
LUMINOUS INTENSITY VS
AMBIENT TEMPERATURE
SPECTRAL
DISTRIBUTION
180
1.0
160
f
0.8
140
0.6
120
"'
100
0.4
80
/
0.2
60
........
-50 -25
0
25
50
75
\
o
100
600
AMBIENT TEMPERATURE (OC)
620
640
660
680
700
WAVELENGTH - A (nm)
LUMINOUS INTENSITY VS
FORWARD CURRENT
16
~
14
>
e-
10
~
g
RL5054"IY
12
11 L
~
e-
/
/
'"
o
(!)
z
~
::c
a.
FEATURES
• T1 3A Package Size
• IC Compatible
• Wide viewing angle
• Low power consumption
• Mounting clips available
Maximum Ratings
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 125mW
Derate Linearity from 25· C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1.6 mW/· C
Continuous Forward Current ................................ 50 mA
Operating Temperature ............................. -55· to +loo·C
Storage Temperature............................... -55· to +loo·C
Peak Inverse Voltage ....................•...................... 3.0V
Lead Soldering Temperature
('1'6 inch from case) ............................... 5 sec @ 260·C
Opto-Electronlc Characteristics @ 25° C
DESCRIPTION
The OL-30. a T1% lamp. is a high
brightness orange TSN (Transparent
Substrate Nitrogen) technology. solid
state lamp which emits light in the
orange region with good off-angle
viewing.
The lamp is in a lightly diffused orange
case.
P.rameter
Luminous IntenSity
OL 30-3
OL 30-6
Min
Typ
3.0
6.0
5.0
10.0
Max
mcd
mcd
Forward Voltage
1.8
2.7
V
Reverse Current
0.1
615
100
I'A
nm
Peak Emission Wavelength
Viewing Angle
25
Specifications subject to change without notice.
111
T••t
Condition
Unit
= 20mA
= 20mA
IF = 20mA
VR = 3V
degrees
IF
IF
TYPICAL OPTO-ELECTRONIC CHARACTERISTICS CURVES
LUMINOUS INTENSITY VS
VIEWING ANGLE
SPECTRAL DISTRIBUTION
100'1.
100
V
90
1\
/
80
70
II
60
50
\
/
10
~
=
570
r-..
\
.\
-~
\
/
20
\
/
580
590
I
\
\
/
40
30
"
'\
600
610
620
630
640
\
"650
1\
\
'-..
r--
660
670
\.
'\.
WAVE LENGTH
(NM)
"o
FORWARD CURRENT VS
FORWARD VOLTAGE
20"
30"
40"
50" 50"
LUMINOUS INTENSITY VS
AMBIENT TEMPERATURE
120
10
/
~
100
L
10
10"
/
"-....
"'" 1"-....
80
"'"
60
40
10
20
o
10
1,4 1,6 1,8 2,0 2,2 2.4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 V
o
FORWARD VOLTAGE
25
TEMPERATURE
112
50
15
100
'--
70"
BO"
litronix
YL·4850
YL·4550
A Siemens Company
YELLOW T1 3/4 LED LAMPS
Package Dimensions in Inches
I
230
0"
j
FEATURES
• T13,{o Package Size
• 1 Inch Leads
• Both Types Can Be Front Panel
Mounted
• Snap In Mounting Clips Available
• IC Compatible
Maximum Ratings
Power Dissipation @25·C ....................... 120 mW
Derate Linearly from 25·C . . . . . . .. . .. .. . ... -1.6 mW/·C
Storage & Operating Temperatuare ...... -55·C to +100·C
Lead Soldering Temperature
(1/16 in. from case) ...................... 5 sec @ 260·C
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . .. 3.0 V/5.0 V
Continuous Forward Current. . . . . . . . . . . . . . . . . . . . .. 30 mA
DESCRIPTION
Both types are TSN (Transparent
Substrate Nitrogen) LED lamps with
yellow diffused lens. The YL·4850 is
a low price commercial grade
device. The YL-4550 is a higher
brightness lamp.
Opto-Electronlc Characteristics (@25 ·C)
Parameter
Te.t
Min Typ Max Unit Condition
Luminous Intensity
YL·4850
.05
YL·4550
1.0
Emission Peak Wavelength
Spectral Line Half·Width
Forward Voltage
Reverse Leakage
YL·4850
YL·4550
2.0
1.8
585
35
2.4
mcd IF=20 mA
mcd IF =10 mA
nm
nm
3.5
V IF=20 mA
0.1
0.1
100
100
,.A
,.A
VR =3.0 V
VR =5.0 V
Specifications subject to change without notice.
113
I
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
RELATIVE LUMINOUS
INTENSITY VS
FORWARD CURRENT
RELATIVE LUMINOUS
INTENSITY VS ANGLE
100
r-O::r-...-,---,r-r-,--,---,---,
80
~~+~~~~__~~
60 1--+-+-+-'I--4~-\---I
40
~+-+-+-+->,f.\.--l-\---I
10
/
~---I--/-Y-------l--I
./
20
40
60
20
10
80
If -FORWARD CURRENT- rnA
NUMBER OF DEGREES OFF ANGLE (%)
FORWARD CURRENT
VS
FORWARD VOLTAGE
SPECTRAL
DISTRIBUTION
15 ~-+-+--4-+--H--I
10
1---1--+--4-+JH----l
0.4 H~-+_I++_+\_+-+---H
J
Ji
10
1.S
2:0
2.5
530
570
590
610
630
30
WAVELENGTH
~
Inml
V,-FOAWARD VOLTAGE-V
Mounting Information: YL·4850 and YL·4550
The clip mounts in a .2S0"dia. hole and fits upt to .12S"panel thickness. A plastic collar
is provided which fits over the back of the clip to lock the LED securely against the panel.
BLACK CLIP AND COLLAR: 004·9002
CLEAR CLIP AND COLLAR: 004·9003
114
litronix
GL·4850
GL·4950
A Siemens Company
GREEN T1 34 LED LAMP
Package Dimensions in Inclies
I
CATHOO[
LE.AD
SIOITER
TI ~nk;;-j---'--
~+
See other side for clip dimensions.
Maximum Ratings
FEATURES
• T13/4 -Package Size
• 1 Inch Leads
• Both Types Can Be Front Panel
Mounted
• Snap In Mounting CliPI' Available
• IC Compatible
Power Dissipation @25°C ....................... 120 mW
Derate Linearly from 25°C ................. -2.2 mW/oC
Storage & Operating Temperature. . . . . . .. _40°C to +8O°C
Lead Soldering Temperature
(1/16 in. from case) ...................... 5 sec @28O°C
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . .. 3.0 V/5.0 V
Continuous Forward Current. . . . . . . . . . . . . . . . . . . . .. 30 mA
Opto-Electronic Characteristics (@25°C)
DESCRIPTION
Both types are green gallium
phosphide solid state lamps with
green diffused lens. The GL·4850 Is a
low price commercial grade device.
The GL·4950 is a higher brightness
lamp with minimum light output
specified.
Parameter
T••t
Min Typ Max Unit Condition
Luminous Intensity
GL·4850
GL·4950
1.0
EmisSion Peak Wavelength
Spectral Line Half·Wldth
Forward Voltage
Reverse Leakage
GL·4850
GL·4950
1.0
1.8
565
35
2.2
mcd IF=20 mA
mcd IF=20 mA
nm
nm
3.0
V IF =20 mA
0.1
100
100
p.A VR =3.0 V
p.A VR =5.0 V
Specifications subject to change without notice.
115
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES.
RELATIVE LUMINOUS
INTENSITY VS
FORWARD CURRENT
RELATIVE LUMINOUS
INTENSITY VS ANGLE
100
~~,,-'--r-~-r~-'--'
00
~~~"~-+-4~~~
60
f-t-+-++-+-+---j--l
40
~~t-t-+--'\f\~~~
20
t-t-t-t-+-+--t"~H
T,,=2S"C
/
10
20
40
60
00
15
/
20
25
30
I. - FORWARD CURRENT - rnA
NUMBER OF DEGREES OFF ANGLE (%)
FORWARD CURRENT
VS
FORWARD VOLTAGE
-<
!
~
g;
i3
c
~
it'",
20
SPECTRAL
DISTRIBUTION
.--,---.,---r--r......-r--,
15
10
5
.s
1.0
1.5
2.0
2.5
0.31501"'---1
NOM
I-H-t-tt-+-+I+++-1
0.2
H-+--itJ+++-lt-tH-I
510
3.0
530
550
WAVEL.ENGTH
VF - FORWARD VOLTAGE - V
1-
0.4
590
610
'inm)
0025
.,.,1
I
GL4850/4950
Mounting Information: GL-4850 and GL-4950
The clip mounts in a .250" dia. hole and fits up to .125" panel thickness. A plastic collar
is provided which fits over the back of the clip to lock the LED securely against the panel.
BLACK CLIP AND COLLAR: 004·9002
CLEAR CLIP AND COLLAR: 004·9003
116
litronix
RL·2
A Siemens Company
RED LOW PROFILE LED LAMP
Package Dimensions In Inches (mm)
z
~
Ci5
w
~
I~lS0~
~40S)
.- fl -.T
o
.045
r~ ~"\
:: \ \
(1.14)
~
L
z
a:
I
f2
b
z
.020(.5)x.025(.S35)
"" ~
~
I
.500
(12.7)
t
~.050
(1.27)
I
.1
---I .10
(2.54)
~
.
~~··~!t
:::>
~
o
~
z
";;l
-.
~
Ci5
«
J:
a.
.230
(5.84)
.190
.245
~\ (4::3) (S.22)
\.. FLAT OENOTES
CATHODE
Maximum Ratings
Power Dissipation @ 25°C ................ 200 mW
Derate Linearly from 25°C .......... -2.67 mW/oC
Continuous Forward Current ............... 100 mA
Recurrent Peak Forward Current
(1 Ilsec pulse @ .05% duty cycle) ............ 3.0 A
Storage and Operating Temperature ...... -55 to +l00 oC
Lead Soldering Temperature
(1/16 in. from case) .............. 5 sec@260°C
Peak Inverse Voltage ..................... 3.0 V
FEATURES
•
•
Red Diffused Lens
Front Panel Mounting Clip
Available
•
Large Radiating Area
•
Low Power Consumption
•
•
IC Compatible
Economical Molded Plastic
Package
•
VI Inch Leads
DESCRIPTION
The Red-Lit 2 is a gallium arsenide
phosphide light-emitting diode
packaged in a red-diffusive molded
lens. The large radiating area presents
an ideal visual display for indicating
functions.
Opto-Electronic Characteristics (at 25°C)
Typ
Parameter
Luminous Intensity .. 1.5
.3
Emission Peak
Wavelength ....... 650
Spectra I Li ne
Half-Width ...... 40
Light Transition Times 1
Forward Voltage .... 1.65
1.58
Reverse Leakage .... 0.1
Capacitance ....... 115
Temperature Coeffieient of Forward
Voltage ......... -1.8
Specifications subject
117
Max
Unit
mcd
mcd
Test
Conditions
IF = 50mA
IF = 10 mA
nm
2.0
10
nm
ns
V
V
IlA
pF
IF = 50mA
IF = 10mA
V R =3.0 V
V=O
mV/oC IF =5to 50mA
to change without notice.
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. RELATIVE
LUMINOUS INTENSITY VS
ANGLE
FIGURE 2. LUMINOUS
INTENSITY VS AMBIENT
TEMPERATURE
180
>t-
~
'\.
160
t-
~
.g
140
~
120
:3w
100
i
>
;::
80
~
60
0:
II'
-50 -25
0
25
50
75
100
AMBIENTTEMPEAATURE (~C)
FIGURE 4. FORWARD
CURRENT VS FORWARD
VOLTAGE
FIGURE 3. SPECTRAL
DISTRIBUTION
1.0
~
~
0.8
~
o.4
~w
~
0:
1\
50
~ ~g
ffi '00
5.0
0.8
a::
II
ia
~
S20
640
860
!i=iiii~=
,.011;1111;1
lil ::
1\
O. 2
0
fIOO
2.0
680
700
.10
.06
.02
.01
1.1 1.2
1.3
1.4
1.5
1.6 1.7
fORWARD VOLTAGE (V)
WAVELENGTH - A (nm)
FIGURE !I. LUMINOUS
INTENSITY VS FORWARD
CURRENT
3.0
2.7
f-~.!.s~b
"2.4
2.1
1.8
I.S
1/
1.2
1/
0.9
0.6
0.3
-0
Lt
20
40.
60
80
"'OD
FORWARD CUR"f'NT - IF (mAl
Mounting Information
The clip mounts In a .265" dla. hole and fits a 0.062" or 0.125" panel thickness.
For otloler panel thicknesses, a plastic collar is available which fits over the back of the
clip to lock the LED securely against the panel.
118
1.8
litronix
CQX 13
RED CQX 23
YELLOW CQX 33
GREEN
A Siemenlt Company
T 1% LOW PROFILE LED LAMP
Package Dimensions In Inches (mm)
SPACING
I
0.10
(254)
026
(0.65)
(0:5)
.020
Maximum Ratings
FEATURES
•
Reverse Voltage (V R) ....................................... 5 V
Forward Current (IF) ..................................... 60 mA
Surge Current (IFsl, t"10,.. .................................. 1 A
Storage Temperature (Ts'o,) . . . . . . . . . . . . . . . . . . . . . .. -55 to + 1OO'C
Junction Temperature (Tj) ................................. 1OO'C
Power Dissipation (P'o'), T8mb = 25'C . . . . . . . . . . . . . . . . . . . .. 200 mW
Thermal Resistance Junction·to-Air
(T'hJamb) ............................................ 375 KlW
White Diffused Lens, CQX·13
•
Red Diffused Lens, CQX·23
•
Yellow Diffused Lens, CQX·33
•
Very Wide Viewing Angle ± 70·
•
Modified T 1 34 Low Profile Package
•
Yz" Minimum Lead Length
•
IIC Compatible
DESCRIPTION
The COX 13 is a gallium phosphide
light emitting diode solid state lamp. It
has a white diffused plastic lens
which emits a yellowish green light.
The COX 23, Red Diffused Lens, and
COX 33, Yellow Diffused Lens, are
fabricated with TSN (Transparent
Substrate Nitrogen) technology. Their
unusually wide viewing angle of ±70·
is of particular value as an indicator
where good lateral visibility is
required.
Characterlatlcs (T8mb
=25 'e)
Wavelength at Peak Emission
Dominant Wavelength
Hall Angle (Limits lor 50% 01
Luminous Intensity), Iv
Forward Voltage (IF = 20 mAl
Reverse Current (V R = 5 V)
Luminous Intensity
(IF=20 mAl
Rise Time
Fall Time
Capacitance
(VR=O V, 1=1 MHz
COX-13 COX-23 COX·33
Xpeak 56O:t15 645:t15 590:t10 nm
nm
638
592
~om 561
! ......
1,-1(1,)
Perm. pu... handling c.pebility
1,*/(1); l'-jlIIrama'ar; '_-26OC
-f(T~
nm
!llO
~
~
1
Apia 580
550
f
.....
~~
1570
.....
'Ul
...
'"
. '...lID
550
540
5l.... 680
50
!
0
4
Wavelangth at peak .miNion
t
I ,,'
10'
670
660
0
10-'
640
10-2
f..- f.-
----
650
,.
Perm. pul.. handling capability
mA if "" fill; to '" parameter; Tc_" 26°C
.l_=fIT.",w
10'
6'0
610
0
10- 1
'10
600
0
o
25
50
75
100°C
-~/,
-~v"
10' LLllJJJWLJWlWL-1JJllJIJl-LlllJJJi
10'1
10"
100
1Q1
10 1 1111
-_I
LD86==============================================================
o.
M... p.rml..lble forward curr.nt
mA iF=fm
Relative spectraleml..lon I... = f {AI
%
100
10'
80
\
I,
\
60
I
'\
50
\
50
40
40
I
"
RthJm .. b" 37SK/W
\
"
10'
20
20
/
10
1',
550
570
I\.
10
1\
o
590
610
630
650
20
610 nm
60
80
_7
t.O
--A
'IOO
I
10·'
0 (
pF
50
11. 1.61.8 2D2.221.'lJj 2.83012143.618 V
--V,
Capacltance,c = fIVR}
Luminous Intensity I..
I;,D .. "T_I
%
I
110
I
v,
I,
1'00
0
f""'t-t-++404.c.;j::::J
BO
0
60
f-. ~
1 '"
100
80
1-- f-. f-.
60
f-. f-.
l-
f--
0
f-.
f-.
10 f-.
40
40
,
0
0
,
10'
r--
,..,
10
1--.
15
SO
75
- - I...
129
1000(
iFt--t
15
~
l'
~
1-- - f-. f-.
50
75
- I....
100 0 [
I
LD 86 (continued)
Radiation char1lctllristic
I ••• -f(t;?)
======================================
Luminou. intan.ity I. =f(Id
Wavalangth at peak aminlon
10'
,
II.poo.~
i
nm Ape... = f(T.mb)
hrm. pul.. handling capability
mA If = fIt); '1''' parameter; T. mb " 25°C
620
10'
610
600
590
I-
580
------
550
54 0
,.'
530
10'
°
--I,
50
75
--t
LD87===========================================================
nalative apactral emlnion I,•• = f (AI
Max. permlssibla forward current
mA h=f(n
.,
100 "-,---.---,, .,---.---,,---,
10'
Forward currant f F = f (VFI
LD 87
+
/1
/
60
40
10'
30
== ~
10
10
25
530540550560570580 5!W600 610 61Jl630 nm
50
100'
115°C
\4
1,8
2;1.
2,6
_v, 3,8
3,0
-_A
%
50
I/O
4,2 V
Lumlnoua intanalty...b:.... = fl T•.,.J
Forward voltag. VFV:S O= fl T.mw
OF
3,4
l.uO
V,
i,
Yf15°
I
1100
i
)'00 [-'-t-t--J"""t-t-t-i--i
f-t-+--+-+
80
80
60
60
40
40
10
10
I.
30
iii
10
I
10'
10'
nadlatlon charact.,'..,c
l •• ,=f(rp)
10'
10'
10'
10' V
.,d
15
50
75
Lumlnouslntanalty I.,=f(I F )
100°C
100"e
Wavalangth at p.ak emlnion
nm Ape ... = flTMrIIII
590
10'
Perm. pul.. handling capability
A
'O-~~-~-T-r~
if =f(t); v = parameter; T. mb =25°C
10'
).peD~ 580 r-t-~--,-..,..+--,----t-+
r 570:
f
560
1001
~tH1tl-t!lN.lJlJ!!IJ
: ; Ii.
I
II"
4 ,·(t~.-{$
--I,
50
..'oA
75
-Tomb
130
~~
10'
~ullJtlJllld .
~
~
~
~
~
--,
i
~
~
litronix
cav 56 SERIES
cav 58 SERIES
cav 59 SERIES
HIGH EFFICIENCY RED
A Siemens Company
YELLOW
GREEN
CYLINDRICAL LED LAMP
PRELIMINARY
Package Dimensions in Inches (mm)
'I
1)
026
(0.65)
(0.5)
165
AREA NOT PLANE (04.2)
(04.0)
.157
.020
992
(25.2)
""
(24.8)
" " .976
CATHODE
161
/
(4.1)
315-(3.9)i8.0) .154
.05
(1.3)
(1.0)
.465
(11.8)
(11.3)
.445
.039
1) MINIMUM LEAD LENGTH 1.0 (25.4)
Maximum Ratings
FEATURES
•
•
•
Red Diffused Lens, cav 56
Yellow Diffused Lens, cav 58
Green Diffused Lens, cav 59
VR
IF
i FS
Storage temperature
T,
Junction temperature
Power dissipation (Tamb = 2SoC)
Thermal resistance junction to air
Ptot
Characteristics (T.mb
=
Minimum Lead Length 1"
IIC Compatible
DESCRIPTION
The cav 56 and cav 58 are light emitting
diode lamps fabricated with TSN (transparent substrate nitrogen) technology.
The cav 59 is a gallium phosphate LED
lamp. All three series have a diffused lens
which forms an evenly dispersed circular
head on light.
7j
RthJamb
25°C)
Cylindrical Shape
• 1/10" Lead Spacing
•
Reverse voltage
Forward current
Surge current (t'; l0.us)
Wave length of emitted light
Dominant wave length
Aperture cone (half angle)
(Limits for 50% of luminous
~peak
"dom
~
V
mA
A
5
60
1
-55 to +100
100
200
375
COV 56
COV 59
645±15
638
50
560±15
561
50
°c
°c
mW
K/W
nm
degrees
intensity 'v) shielded against
lateral emission of light
Forward voltage (IF = 20 rnA)
Reverse current (VR = 5 V)
Luminous intensity (IF == 20 rnA)
Rise time
Fall time
Capacitance (VA"" 0 V)
2.4 (~3.0)
0.Q1 (~ 10)
VF
IR
i,
~ 0.63
Ie
If
100
100
12
Co
V
I~100063 1~0.63
50
100
10
50
45
~A
mcd
ns
pF
Luminous Intensity
Type
cav 56-2
cav 56-3
cav 56-4
COV
COV
COV
COV
COV
cav
58-2
58-3
58-4
59-2
59-3
59-4
Min
Max
Unit
Test Condition
.63
1.0
1.6
.63
1.0
1.6
.63
1.0
1.6
1.25
2.0
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
20 mA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
1.25
2.0
1.25
2.0
Specifications subject to change without notice.
131
I
CQV56====================================~=========================
Ralatlve Ipectralam',,'on t.. "" fill
Max. parmi_bl. forward current
rnA IF"'fln
-80
%
100
I
f
90
\
If 70
80
r
70
60
\.
50
60
1\
40
1/
20
RthJcalllb-375K/W
I
\.
20
I\,
10
10
1/
o
600
620
,
1\
30
\
,/
V
10'
40
50
30
rnA
10'
[\
1\
640
660
680
700
720 nrn
20
40
60 _ T
80
_
1~
--).
Forward voltage VF~60
Capacitance c"" fl VAl
pF
50
'"
II
10'1
100°C
161.8 LOl2 2.42.62.8 3.0313UH8 Y
- - Vf
Lumlnoullntanllty ~ '" fl T....
f (11 mb)
w
%
v,
c
120
~-r
YF2SG
f 100
0
i
90
80
60
60
I-f-
-1..-
40
40
r- - f
j
20
20
0
c---- ...:
I
0
0
0
10·'
10'
25
10'y
50
--U,
75
t- -- t-~ - +----j-----j-----j-----j
r-H i-t-+---t--t-i
100'C
25
-Tamb
Wavelangth at peak amlnlon
690
V-O.OO5
10'- • •
).
I
680
T~
650
640
...
f
660
.- .-
..I-
.- ..-
~
..1 0 ' _
620
610
600
o
25
so
10'
75
100 cae
10 2 ms
--f
-To.mb
132
75
---+Tamb
Perm. pul.. handling capability
rnA IF '" f(t); v ... parameter; T.... "" 25°C
l_k=fITamW
SO
100 'c
CQV58
Max. permissible forward currant
Relative spectral.ml"lon 1,.1 '" f(A)
mA h=f(n
%
100
~
90
I rel
I
I
1\
60
If
I
I
1\
I
~
40
1\
40
I
30
1\
30
r-.
/
10
01/
550 570
590
610
630 650
-A
a
\
"
Krj
-~-:
!
\
10'
-- f\ _.- r-
a
20
40
60
1\
100
80
I
10"
O(
11. 16 18 2D 2.2 2. 2h 2.8 3D '12 3.4 3.6 3.8 V
-~T
Forward voltage VF;SO
Capacitanca C"" f (VII)
pF
~Vf
= !(T8mb)
Luminous intanslty IV;5 0 = II T8mb)
%
110 I;-~-r
50
%
110
Vf
e
11.0
'-
''1''100
100
1so
I
I,
i
VF25 °
t--
i
60
I
'l
so
~
30
,
!
c--
-.l
~
-- -
'-
......
60
,
,
20
40
10
Y
10
10-'
a
10-'
10'
10' V
--U,
nm
H-.15
0
I---
t
75
a
100°C
a
15
Wavalength at peak emission
Ape'k = II T.mb)
Perm. pul •• handling capability
mA IF
10'
-- -
600
~
~~o.oos
~
1 -4-
I-
580
= fit);,,:; paramatar; T"nb = 25°C
01)'
If
10'
4-
"
::==
OS
~
570
560
550
540
530
0
25
50
75
10'
100°C
1~'
i~
10·'
10'
10'
_I
-~ Tomb
133
50
75
-Tamb
--lamb
610
590
~
10
_L
50
I
t--
I
620
Apeak
40
I
--t-
-- - - f-
.......
0
/
10'
I- - - - t-- - i - I- "'I-
10
670nm
RthJQrnh~ 37~
I
20
20
I
-e-
60
50
50
= f (Vf)
10'
If 70
80
70
Forward voltage IF
mA
TT---r-
80
10 2 ms
100 'C
I
CQV59
Relative spectral.mlulon I... '" fll)
I
lret
Max. permlHibla forward current
11\
4
I\
80
70
rnA
102
~O
-~r-
90
I
I,
60
1
40
\
1
30
I
! :
RtIlJamb=350K/W
r-
N
-
\
1\_-
IJ
ro'
''\
,
20
10
20
i
f-iT
1
10"'
0
530 540 550 560 570 580 590 600 610 620 630 ""
-~
0
25
50
75
100
-T
125'C
2,6
3iI
310
-U,
3,B
,2 V
;,0 = II T.m~
Lumlnouslnt.n.lty 1.1
'I.
120
60
2)
I~
I"
Forward volta •• VFV:,O = f(T.,.,!))
Capacitance C '" I( VA)
pF
~,
120
V,
f
/ 1//
• lOt
f---- f-I'\ +-
50
40
'\
,,'
I
Ill!
;
60
0
forward volt ••• If'" f (VF)
rnA IF""'fln
'I.
100
I,
50
flOO
1'1'100
40
80
80
I"-.
I.......
r...
1\
t-- r---
30
60
60
20
40
40
10
20
-~-
I.......
r...
20
1
0
10"3
10-1
If'
10'
-v,
0
10' V
0
25
50
75
lPNk""
0
25
-Tamb
Wavelength at peak amlulon
nrn
590
0
100'C
fiT.......
A
Perm. pulse handling capability
IF-'(t);,. '" parameter; T. mb=25OC
10'
~".o.oo,
A.pellk580
I
570
560
~
Ir
I- l-
I-
I
I---
l!!!!i
r;::;
550
1Ir'
540
OJl'
II.D1
!lmj
l'
"
530
520
510
500
10"'
0
25
50
75
100'C
10"'
'I;~~'I
10"'
10"3
10"1
10'
_I
~'amb
134
10'
lO's
50
75
\
- T...
100'C
litronix
HIGH EFFICIENCY RED
A Siemens Company
YELLOW
caV16
CaV18
cav 19
GREEN
SQUARE LED LAMP
Package Dimensions
I
Dimensions Inside parenthesis are in mm
Dimensions outside parenthesis are in Inches
Maximum Ratings
VR
Reverse voltage
Forward current
Surge current (r ~ 10,u.s)
'F
iFS
Storage temperature
Junction temperature
T,
1j
Power dissipation (Tamb = 2SoC)
Thermal resistance junction to air
PlOt
R thJarnb
5
60
1
-56 to +100
100
200
375
V
mA
A
·C
·C
mW
KIW
FEATURES
Characteristics (Tomb = 25°C)
•
Red Diffused Lens, cay 16
Yellow Diffused Lens, cay 18
Green Diffused Lens, cay 19
•
Square Shape
•
Minimum Leed Length %"
•
1/10" Lead Spacing
•
IIC Compatible
The Cay 16 and cay 18 are light emitting
diode lamps fabricated with TSN (trans·
parent substrate nitrogen) technology.
The Cay 19 is a gaUium phosphide LED
lamp. All three series have a diffused lens
which forms an evenly dispersed rectangular
head on light.
cav 18 cav 19
645±15
638
50
590±10
592
50
560±15
561
50
nm
nm
degl'ees
intensity 'v) shielded against
lateral emission of light
Forward voltage (IF = 20 rnA)
Reverse current (VR , = 5 VI
luminous intensity (IF
Rise time
Fall time
= 20 mAl
Capacitance (VR "" 0 V)
DESCRIPTION
CaV16
--~~~~~~~r---
Wave length of emitted light
Dominant wave length
Aperture cone (half angle)
(Umits for 50% of luminous
VF
'R
~ 0.63
Co
100
100
12
i.
t,
t,
2.4 (~3.01
0.01 (~101
~ 0.63
100
50
100
50
10
45
V
1~0.63
J.lA
mcd
n.
n.
pF
Luminous Intensity
Type
cav 16·2
cav 16-3
cav 16-4
cav 18·2
cav 18·3
CaV18-4
cav 19·2
cav 19·3
cav 19·4
Min
.63
1.0
1.6
.63
1.0
1.6
.63
1.0
1.6
MIX
1.25
2.0
1.25
2.0
1.25
2.0
Unit
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mod
mod
Test Condition
20mA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
Specifications are subject to change without notice.
135
caV16=============================================================================
Max. parmiuibla forward currant
Forward voltage F
rnA If"'fln
%
100
~
60
It
I
1\1
so
30
10
o
600
~
620
640
660
680
~rd-t--tllPl
I
/
1 V
10'
10'
20
-T
+-
10
I
720 nm
20
40
60
~~
80
100
0
Capacitance C'" f t VAl
Forward voltaga
'!.
rI
IZO
It:
f
IJ
i......
Vfl5·100~
t
v.v:~o
1.4 16 1.8 2.0 2.2 2.4 2b 2.8 3.0 3.2 3.416 3.8 V
~V,
= f t Tomb)
Luminous intanslty
60
6 '"
f (T...b)
'/,
110
!
:
--....J-- -----1----.----+- - -
~
I
~~~
,
~~;-, r-.
l..---'
I
tT'
10"
e
~T
pF
50~Tr
I,
3'
J" J
700
I (VFI
..
~
['\ !lb
j\ .til
II
20
80
i-'
60
t---~
RJ't
~:
'
--
j
I
40
20
+_
,
I
""
i
I
Et--~
_..1
25
-
50
- - Vl/
Wavate"gth at ,.8k ami..lon
J. ...... =f(T-l
bdll1ktnc.....ct.rktk:
1,.,"/(41)
1~O
20°,
__
"_
JOQDe
Pe,m. pul.. handtlng capability
rnA IF'" fit); I' at parametar; T._ .. 25°C
~o~
--Ip~
10
IOOO(
75
--famb
~20(
.,--..,;
,,
I,
..,
t
690
680
670
660
I--
55 0
I--c-"
I-- -I-64 OL6'
,
61 0
610
10'
600
15
--I,
100
Ll.illJ"'-:.LlIJWIj--:-"-WllJlLjl.l.lJJJW
10 z ms
0 (
~,
136
caV1S===============================================================
MIlK. p.rml_'.. torwerd ourrent
Relative !ipectr.lem!aton 1.01 .. '(.I.)
mA
%
100
1\
.
I.· fin
eo
I ..
---
50
r'\
40
,
,
40
i
lO
'"
.,
Mtr
II
J'.
,
570
590
610
-,
630
650
!
!
!
-'\ H-:
1\-
~
-
'0
20
670nm
,
I:
1\
o
SSG
I '0'
'-W-~
R1IIJa"",-]75KIW
20
20
40
60
~
'100
80
10'
--V,
C.,,--,_C='Iv,,1
"
110
"
-,
I
_..+
0,.
LumlnOUllntenally
110
~
J..~IO -
V
'IT_)
"- .....
*1100
BO
lO
f60
60
:wlB
15
I
I
'0' V. \61.8 2D2.2ZI.2.62.8lD123.41618
°c
-_7
OF
50 r-l"mnr-lrTlTrTTrr-rrmm
1("',
1,
i I I '
1\
50
Forwerdvo..... I, -
10'
11-
IF 70
1\
••
50
""" I'
-- '1-+
f- 1--40 f-
f20
!
I
I
100D(
75
-t
--+
-+,
15
50
100°(;
75
--Yo
Perm. pu" HncI_ OIl_lilly
/, - fll);. - .,....mtt.r; T_ - 2S-C
. .d...................
1••• =/(,,)
."
20',
1
••
nm
_O~'_ _~~
_~~
'O'~
620
,
I,
t imm
610
t
A ....
I
600
59
lO'
f- -I-"
Of-
10'_
580
511
560
550
54 0
510
-1,
137
o
25
50
75
___ 7..
'00"(
10'
,0'
10' 10' .
-,
cav19
===============================================================
Me.. ptlrmlulble fofwarcl cu,...nt
Reletlve epKtr•••mIHion I..... nt)
mA iF-fl1)
mA
00 ,,-.~-r'-'-'-"-'
10'
.If
1/
/
60
40
ID'
10
Fe F=
!
-----r
f- f- 1---10-1
15
-,
50
15
100
-T
1.4
1/5,!:
1.8
2.2
2,6
3.0
3.4
-V,
3.8
4.2 V
caV19
pF
50
%
lr-TTTTTT11rTT[TnTI,rrr-.I.!.TTTTITT1l
[
110
v,
*1'ao F"t-!-HH:.;.....j~~
1"0 [H+++Hllf-+f1'Wlil
80
60
40
10
15
50
100'!:
75
-Tamb
-r".
....... pul.. h.nclllng cap.Wltty
IF.ftt);" .. paremet.!'; 1... -26"<:
Luminous intu.ity
RHlldon ch.racteriltic
Ir.I·f(,,)
~='(I.)
IICII
nm
10'
!liD
A.". SID
I,
t
t
570
560
550
- -~
540
530
520
510
500
-I,
138
o
50
75
-r...
_I
litronix
cav 26 SERIES
cav 28 SERIES
cav 29 SERIES
HIGH EFFICENCY RED
A Siemens Company
YELLOW
GREEN
TRIANGULAR LED LAMP
Package Dimensions
I
~==£[
Ii ; ;
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
FEATURES
•
Red Diffused Lens, cav 26
Yellow Diffused Lens, cav 28
Green Diffused Lens, cav 29
•
Triangular Shape
•
Minimum Lead Length 'h"
•
1 11 0" Lead Spacing
•
IIC Compatible
DESCRIPTION
Reverse voltage
VA
5
Forward current
Surge current (t ~ 10 J.Ls)
IF
60
;FS
1
Storage temperature
Junction temperature
Power dissipation (Tamb = 25°C)
T,
Tj
Ptol
Thermal resistance junction to air
RthJamb
-55 to +100
100
200
375
Characteristics (Tamb
25°C)
Wave length of emitted light
Dominant wave length
Aperture cone (half angle)
(Limits for 50% of luminous
intensity I) shielded against
lateral emission of light
Forward voltage (IF = 20 rnA)
Reverse current (VA =: 5 V)
Luminous intensity (IF '" 20 rnA)
Rise time
Fall time
Capacitance (VA'" 0 V)
Apeak
"dom
r.p
CQV 26 ICQV 28
ICQV
29
645±151:590±1O 1:560±15
638
592
561
nm
nm
50
degrees
VF
IA
i,
~ 0.63
"'f
Co
100
100
12
50
50
2.4 (;" 3.0)
0.01(;" 10)
I~1000.63
100
10
r
V
50o 63
50 .
45
jJ.A
mcd
ns
pF
Luminous Intensity
Type
The cav 26 and cav 28 are light emitting
diode lamps fabricated with TSN (transparent substrate nitrogen) technology.
The CQV 29 is a gallium phosphide LED
lamp. All three series have a diffused lens
which forms an evenly dispersed triangular
head on light.
:
CQV
CQV
CQV
CQV
CQV
CQV
CQV
CQV
CQV
26·2
26-3
26-4
28·2
28·3
28·4
29-2
29-3
29-4
Min
.63
1.0
1.6
.63
1.0
1.6
.63
1.0
1.6
Max
Unit
Test Condition
1.25
2.0
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
20mA
20mA
20mA
1.25
2.0
1.25
2.0
Specifications are subject to change without notice.
139
20mA
20mA
20mA
20 mA
20mA
20mA
COV2S===============================================================
M ••. perml....... forwaIrd cu".nt
iliA I,-fln
%
100
1\
I, 70
Ij
1..
..
1\
f\
40
40
30
RI~JII ...~375K/W
1\
30
1\
I
1\
!
10
10'
20
20
",
600
I'
620
640
660
680 100
-A
1\
[\
20
720 nlll
10'
!
50
50
mA
Irr-
80
40
60
150
.r'
100 °C
'!.
110
'!.
110
V,
V, ..
I
+-ri
60
40
10'V
15
'" I"
I
i
,
I
75
10
15
IDO OC
50
~aMraoterWtic
W.".t..lth lit puk emlMion
l ......
m'
."
), .... k
lODGe
"-,m. puIN handline cepMilllty
If ./1";. - parameter; T_ - 25°C
·fIT~
,m
I,
'lS
-r,.,.
--r,..
1.. ,=/('1)
t- t-
j
40
-to
50
+
1---
,
I
10 0
r--
60
I
10
.- --.
e-- t- f-
t- t- t-
'0
--V,
~~
f--
f 100
10-'
I
lit \6 U 2.02.2 2.42.62.81OU 3.43.618 V
-V,
_1
10'_
1
680
..
1,
'5'
670
..,
."
--
.....,.1- f-
'"
."
... ,
140
25
50
"
100 DC
,,'
10"2
--I
caV28============================================================
....
..
r..-tI ........ ',.,('W
10'
~
I,
1'1
1..
1\
r\
1\
,
,.'
R"""",JlSICIW
1\
,.
10
1\
20
il
o il
5SD
5'Jt SJO 610
r0eo
650
r\
10
zo
670_
40
_1
..
pF
50
120
C
-,
10
..
,
1\100-(
10'
14" \l2D122t.Z6 2.13012 31.1618 V
--v,
.............. ~-'I'-I
..
120
f- -_.
.....
140
......
.....
......
&0
20
10
I
,
20
oto"2
IS
50
-'/5
Z5
III'!:
A,.o 610
t-
590
510
5111
III'C
"'~E
620
t
-75
.
..
I,
50
-
t
I--' ~-
10'
550
530
141
o
2S
50
15
-w
1OO'C
.' .. . -. ...
'II
..
I
CQV29===============================================================
Porwerd ....... l,-f(V,)
M ••. ,.,........... torw.rcI ........,
%
InA I,-fln
IlO
IlO
CQY 29
yf
1\
1,.1 90
!
IRA
III \
BO
/
V
70
50
&0
i
H-k'+-+-
1-+lJ---j-+-+---- -t-
50
I
'
"11-1-
40
40
,;,11
30
10
Ii
10
-.
5305405505605705lKJ5906Ill6IJ 6Z06Jlnm
15
wi'
50
1,4
1,11
1,2
I~
-I
l,IJ
1,4
-V,
l,II
<,I V
~oeC=/(VII)
CQY 24/ LD 156
pF
%
CQV25/LD57
110
50
~
C
,4•
•
r-.
~WOr-r-~~~~~~
g
i"'o.
I.....
aof-t-HH-t-t-t-
I'
1-1-
20
0
50 ~+-+-+-+-1-1--r-
50
4Of-t-HH-t-t-t-i
40
I--+-t-t-t-t-t-H
20
10
•
15
50
-...,
75
r-r- -
WO't
50
'IS
IOG'C
r.nn. P.Ut. ....................,
w.......... at .................
................... 1.·'1/,1
- ...
_-I(T....,
1;-'(11; .-Plrtlmeter; T_-n"C
COY 29
'"!liD
",,..580
I,
t 570
Dr-
t
,.....r-i--"
5&
550
r- -r--
-1- ----
540
--- ---
530
520
5~
50D
-1,
o
IS
50
1lO't
-I
142
litronix
A Siemens Company
LD 602 SERIES LD 606 SERIES
YELLOW
HIGH EFFICIENCY RED
LD 607 SERIES
GREEN
ARROW LED LAMP
PRELIMINARY
Package Dimensions In Inches (mm)
LEAD SPACING
SURFACE NOT PLANE
~ 1.'(fJ). 5}--j
295
287
.189
14.S)
(4''])
.181
fri:=''''::'''9~~~~:1:.-=.I:::::!]
NOT SHARP EDGED
161
(4.1)
(3]")
154
11 MINIMUM LEAD
LENGTH 1 " (25.4 mml
Maximum Ratings
Reverse Voltage (VR) .. .
5V
Forward Current (IF) ... .
.. .... 60mA
.. ........... 1 A
Surge Current (iFS, t" 10 .5) ............. .
s> ................ .
Storage Temperature (T
-55'Cto +100
Power Dissipation (Plol), Tamb = 25'C ..... .
200mW
Thermal Resistance Junction to Air (RthJamb) ..
375 KIW
Opta-Electronlc Characteristics (Tamb
Parameter
FEATURES
• Arrow Shape
• Red Diffused Lens, LD 602
Yellow Diffused Lens, LD 606
Green Diffused Lens, LD 607
•
•
Minimum Lead Length 1 " (25.4 mm)
'c
.. 100'C
Junction Temperature (Ti) ................ .
=25°C)
Symbol
LD 602
LD 606
LD607
Unit
Wave Length of Emitted
Lighl
('peak)
645±15
590±10
560 ±15
nm
Dominant Wave Length
(~om)
638
592
561
nm
50
50
50
degrees
Aperture Cone
(Half Angle)
(Limits for 50% of luminous
Intensity Iv) Shielded
Against Lateral Emission
of light
Forward Voltage
(IF=20 mAl
VF
2.4
Reverse Current (VA = 5 V)
IR
0.D1
Luminous Intensity
(IF=20 mAl
Iv
",0.63
2!O.63
2::0.63
mcd
DESCRIPTION
Rise Time
I,
100
100
50
ns
Fall Time
If
100
100
50
ns
The LD 602 and LD 606 are light
emitting diode lamps fabricated with
TSN (Transparent Substrate Nitrogen)
technology. The LD 607 is a gallium
phosphide LED lamp. These lamps
have a diffused lens in the shape of
an arrow.
Capacitance (VA = 0 V)
Co
12
10
45
pF
1110" (2.54 mm) Lead Spacing
(~3.0)
V
(~10)
pA
Luininous Intensity
Test
Type
Min
Max
Unit
Condition
LD 602·2
.63
1.25
mcd
20 rnA
LD 602·3
1.0
2.0
mcd
20mA
LD 602·4
1.6
LD 606·2
.63
LD 606·3
1.0
LD 6064
1.6
LD 607-2
.63
1.25
mcd
20mA
LD 607·3
1.0
2.0
mcd
20 rnA
mcd
20mA
LD 607·4
1.6
mcd
20 mA
1.25
mcd
20 rnA
2.0
mcd
20mA
mcd
20mA
Specifications subject to change without notice.
143
I
LD802
...
100
MAXIMUM PERMISSIBLE
FORWARD CURRENT
•• IF=f(1)
RELATIVE SPECTRAL
EMISSION lrel = IW
..
.
FORWARD VOLTAGE
IF = I(VF)
'0'
1,70
1..
,
I\.
50
50
40
r.o
~-
i'
,0
I'
30
20
20
10
°600
620
~
'0
V
~
I'
640 660
680
700
720
20
nlll
40
60
SO
CAPACITANCE C=I(VR)
%
50
110
11t 16 1.I2§21 'UtZ6Z11O 121416 U y
-V,
FORWARD VOLTAGE
VF
VF 25' =l(Tambl
LUMINOUB INTENSITY
%
I,
1
100
..
!i
!;
Ii
20
'0
i' ,
°
10'2
;1
1
"t
100
1'00
80
BO
60
611
4Q
40
20
20
J
'0
-
'0'
__ VII
25
10'y
50
75
-~
RADIATION
CHARACTERIBTICS
Irel=11<»
LUMINOUS INTENSITY
= I(Tambl
..
1000(
r--.
I.......
-~
25
=
690
r-
~ ... 610
-t-t-
l610
+-1-
°
- --
66
65
°0 -
64
I
°
°
"...°
°
t::t:;
'-
--
......
50
lOOoe
PERM. PULSE HANDLING
CAPABILITY
WAVELENGTH AT PEAK
"" EMISSION ~.ak I(Tambl
Iv=~IF)
I,
-!x....
Iv 25'
110
~
e
II
10·'
lOO·C
_1
-~
pF
1I
10'
~ RtIIJ• IIIb-37 KIW
I
I
IF = f(t); y .. parameter;
-
.A Tcas.-25-C
'o.~
l
6'
62
144
- -- t-t25
50
15
-,
LD606
...
%
MAXIMUM PERMISSIBLE
FORWARD CURRENT
•• IF=I(T)
RELATIVE SPECTRAL
EMISSION Ir.I=~X)
FORWARD VOLTAGE
•• IF = f(VF)
eo
10'
If 10
1,
I
160
..
..
1\
50
I\.
50
..
1\
"
~
"
30
20
,
II
•
550
510
590
610
63D
"
650
,.
I\.
~
670M!
20
40
60
-X
10
1OO
1
10'
1 (
V:~.
CAPACITANCE C = f(VR)
50
I'
0
z.a 3112 1416 18
--v,
V
LUMINOUS INTENSITY
=1(Tomb)
%
~r-'-'--r-r~-'-;"
I
I
c
V. 16 11 ZD U 21026
_1
FORWARD VOLTAGE
pF
I
10'
I'
20
10
,
10'
R...JI • Jl'5KIW
Iv --f(Tam III
1;"'25-
1/0
~
j'oo 1-+-+++-t-i-lH
1~0
1-+-+++-t-i-lH
80
601-t-HH-t-t-+...,
60
III
I-t-HH-t-t-+...,
III
10
1-+-+++-t-i-lH
80
"
["-.,
I'
C'
0
~
0
,
0
0
10-'
10°
"IJ'y
--v,
50
75
0) 0(
50
-r",.,
RADIATION
CHARACTERISTICS
LUMINOUS INTENSITY
oed 'v=~'F)
',.,='(,0)
WAVELENGTH AT PEAK
n. EMISSION l\peak = ~amlll
'20
I,
I
590
f- I---f""
I---
510
D3°C
,.'--...
PERM. PULSE HANDLING
CAPABILITY
IF = f(l); Y = parameter;
.. Tamb=2!i'C
f
IO'
511
5511
540
530
75
-r",.,
o
Z5
IO'
W'
-t
145
I
LD607
RELATIVE SPECTRAL
EMISSION I,el = f(Xl
..
III
',--,-
I
l'f:
..
III
MAXIMUM PERMISSIBLE
FORWARD CURRENT
IF=f(T)
FORWARD VOLTAGE
IF = f(VF)
CQY 29
.'
.A
r>-,-r~~~~~
II
!.'
V
10
10
I
:
40
;-rtr
\Grr
I
10
~
L
r--
-
it-i-
40
30
~
60
I
'.-
50
DO
50
1"•
IZSC'C
1,4
FORWARD VOLTAGE
VF
'4 V"F25' =f(Tamb)
110
CAPACITANCE C=f(VR)
I
Iii
100
1,11
I)
-T
pF
r..
75
===
-
-.i
10-1
-,
so
~~
~~
10
5305Ul5505605705805906IIl6lO6206la1lfl
c
/
i
,.
-V,
~
,I
y,
LUMINOUS INTENSITY
Iv
'4 Iv 25' = fIT amb)
11
06.,
V,
•
Ip 3,0 310
I
0'-
l-
'O
b,
......
'0
~e-
60
10
-
"
20
40
0
I
10
o
to'
I
II
10-'
~
III
YJ'V
10'
50
--V"
RADIATION
CHARACTERISTICS
...
-
75
i----e-
10
i
100 DC
PERM. PULSE HANDLING
CAPABILITY
IF = f(I); v = parameter;
T am b=25°C
WAVELENGTH AT PEAK
EMISSIDN 'peak = fIT amb!
LUMINOUS INTENSITY
Iv = f(IF)
I,el=f(~)
40
I
om
!il 0
AptGII 58 0
t,
1570
5&OI-
t
...... ~
550
I
""
510
510
500
--I,
146
o
SO
7S
-r..
u' $
moc
-I
litronix
A Siemens Company
cay 10 (LD 30A/-1/-2/-3) SERIES
cay 30 (LD 30C) SERIES
RED T 1 LED LAMP
Package Dimensions in Inches (mm)
I
Maximum Ratings
•
Red Diffused Lens
Wide Viewing Angle ±35°
cav 10 (LD 30A/-1/-2/-3)
• Glass Clear Lens
Moderate Viewing Angle ±25°
cav 30 (LD 30C)
• T-1 Size
• Yo" Minimum Lead Length
•
Front Panel Mounting
Snap-in Mounting Clips Available
Clip/Collar #004-9016 Clear
#004-9015 Black
•
I/C Compatible
DESCRIPTION
The cav 10/30 Series are standard red
gallium arsenide phosphide LED solid state
lamps_ The cav 10 Series has a red diffused
plastic lens and offers a wide viewing angle
of ±35°. The cav 30 has a glass clear plastic
lens and somewhat narrower viewing angle
of ±25°. These lamps can be mounted in
front panel appl ications with cI ips or used
as back panel indicators.
RthJamb
375
K/W
Apeak
665 ±15
nm
35
25
1.61' 2.0)
0.011,10)
5
5
40
degree
V
"A
ns
ns
Forward current
I,
iFS
Tstar
Tj
Storage temperature
FEATURES
V
mA
A
Ptot
5
100
2.0
-55 to +100
100
200
VR
Reverse voltage
Surge current (t '$ 1 ~s)
Junction temperature
Power dissipation (Tamb
Thermal resistance
Junction to air
'"
25"C)
'c
'c
mW
Characteristics (Tamb = 25°C)
Wavelength at peak emission
Half angle
(limits for 50% of luminous intensity Iv)
COV 10 (lD 30A/-l/-2/-3)
COV 30 (lD 30C)
'I
q
V,
IR
Forward voltage (IF = 20 rnA)
Reverse current (VA '" 5 V)
Rise time
Fall time
Capacitance (VR = 0 V)
I,
I,
Co
degree
pF
Luminous Intensity
Type
Min
Max
Unit
Test Condition
(lO 30A)
COV 10-3
IlO 30-1)
COV 10-4
(lO 30-2)
(lO 30-3)
.3
1.0
1.0
1.6
2.0
3.2
-
mcd
mcd
mcd
mcd
mcd
mcd
20mA
20mA
20mA
20mA
20mA
20 rnA
COV 30A
(lO 30C)
COV 30B
COV 30C
1.0
1.0
1.6
2.5
mcd
mcd
mcd
mcd
20mA
20mA
20mA
20 rnA
2.0
2.4
3.2
2.0
3.2
-
·COV designations are preferred types for new designs and conform
to new international classification standards. L D equivalents
may continue to be delivered during transition period.
Specifications are subject to change without notice.
147
"
.,'
Lumlnoullntertlity I." I {IF}
10'
'"
'\
\
I
I
I
60
40
I
t
1\
\
10
J
..... V
620
641}
660
Luminoul intenllty I. = f !IF}
10'
"
I
600
cav 30 ILD 30Ci
LD 30A/·1/·2
CQV 10
.,'
Reletlve IlMctreleml..kln I,., = '! 1..1
10
-. "
68)
700
7lDnm
--',
10 2 mA
'I0 2 mA
CQV 30 (lD 30CI
CQV 10 (lD 3D)
Redletlon che,.,et.r'ltlc I,., = f ("'}
Red_tlon cherecterlltlc I,., = , ('II)
Mex. permlilible forwerd current
,'Pi
200
100
00
mA I F = 1(1)
100
2()0
~
.A
110
I
I,
r
I
100
RIfIJOIIIb,]SOKI
30'
1\:1-~
.,
40'
50'
50'
50'
10'
70'
'"
~tj~~~~~~~~;
50'
50'
60 0
70 0
80°
50 0
71)0
80 0
I
90
60
40'
10'
I
-
40
r10
r-
90' HI--t::~~:-tc3---ilY 9"
100°
.c_
J
20
40
-
I-
,
1\
'"
60
\
SO
10- 1
100°C
1.1
12 13 1.4 t5
-_1
16 17 I.B 1.9
-',
LumlnOUllntenllty~ ~ I !To.. b }
%
pF
110
1.4
50
I,
T,W
c
r
0
14
~"\ -
100
I'\.
90
,
0
"- '\
60
0.6
0
H-+++--H-+++--H
f- f - -
I'\.
f-
40
0
-r-r-
:--'",
10
-r-r--
1
0
I
- ...
30 ZO 10010 2030 1/)50 60 '10 80 DC
I• .. f (I): I' = paremeter; Tomb = 25 'C
A~.I." I(ToOO\l)
A
710
10'
Apeak 700
t
590
I.--:"
690
i""'"
670
V"r'M""!'""':IF
~
T
'.,"
10' • •
I
III
f- f-
640
J.+iIl+m~lMWill
"'LfiliI1~~~
630
o
15
so
I
om
f- fj
650
v~a.oo~ +ttt++III+++lI-++tll+ttlI
0JJ1
V ......
660
610
"
Perm. pull. hendlln, clpebility
We_length et peek eml..lon
n.
7S
-10 s
100"(
-\00
10 ~
10 1
10 2
(11
--I
148
f+-
10°
10 1 5
so
15
-\00
!OoGe
z.o
V
litronix
A Siemens Company
cav 11 (LD 32-1/-2) SERIES
cav
31 (LD 32 C) SERIES
HIGH EFFICIENCY RED T1 LED LAMP
Package Dimensions in Inches (mm)
Area not clear
I
Cathode
Clip #004·9016 Black
#004·9015 Clear
Maximum Ratings
FEATURES
•
High Light Output at 10 mA
•
Red Diffused Lens
Wide Viewing Angle ±35°
cav 11 (LD 32·1 & LD 32·2)
•
Red Clear Lens
Moderately Wide Viewing Angle ±25°
cav 31 (LD 32C)
•
T·1 Size
• %" Minimum Lead Length
•
Front Panel Mounting
Snap·in Mounting Clips Available
Clip/Collar #004·9016 Clear
#004·9015 Black
•
I/C Compatible
DESCRIPTION
The CQV 11/31 Series is a premium high
efficiency light emitting diode lamp fabri·
cated with TSN (transparent substrate
nitrogen) technology. The CQV 11 Series
has a red diffused plastic lens wh ich emits
a full flooded intense light. The CQV 31
has a red clear lens and a somewhat
narrower viewing angle but higher liIJht out·
put. These lamps can be mounted in front
panel indicator applications or may be used
for legend back lighting.
Plot
5.0
60
1.0
-55 to 100
100
200
RthJamb
375
i.peak
645
V,
/,
t,
t,
Co
35
25
2.4 i'" 3.0)
0.Q1 i'" 1a)
100
100
12
V,
Reverse voltage
Forward current
Surge current {t::;,:; 1 liS}
"
'"
Storage temperature
Ts\or
r,
Junction temperature
Power dissipation
Thermal resistance
junction to air
V
mA
A
°c
°c
mW
K/W
Characteristics (Tamb = 25°C)
Wavelength at peak emission
Half angle
(limits for 50% of luminous intensity Iv)
COV 11 ILD 32-11-2)
COV 31 ILD 32C)
Forward voltage (h = 20 mAl
Reverse current (VR = 5 V)
Rise time
Fall time
Capacitance (VR = 0 V)
degree
degree
V
"A
ns
pF
Luminous Intensity
Type
Min
COV 11·4
ILD 32-1)
COV 11-5
ILD 32-2)
COV 11-6
1.6
1.2
2_5
2_0
4.0
COV 31D
ILD 32C)
COV 31E
4.0
2.5
6_3
Max
3_2
2.4
5_0
8_0
Unit
Test Condition
mcd
mcd
mcd
mcd
mcd
20 mA
10mA
20 mA
lamA
20 rnA
mcd
mcd
mcd
20 mA
10mA
20mA
·CQV designations are preferred types for new designs and conform
to new international classification standards. L 0 equivalents
may continue to be delivered during transition period.
Specifications are subject to change without notice.
149
caV11
Lumlnou. Intenlity , 1. = f ( IF)
Rel.tlve lpectr.lemi..ion 1,0'" f(ll
1\
~~~
b]
'~
I
620
,itO
660
680
I
'~
-
-
10-'
,,'
,,'
-_I,
10-
..,-,
r-..
600
-
~
I
,,-'~
\
20
"o
0
IZ
I". ~
so
LD 32
10'
E
1.10
1
30
Lwnlnou.lntenl!ty L.=f(lF)
CQV 31 (L.D 32C)
'~
I,
60
40
.,'
Lumlnou. int....ity 1, ., , (1,1
me'
10'
%
100
700
720 nm
~A
~/,
t.,
.....ietlon CMNctetiedc ...., " ,
CQV 31 (LO 32C)
Redietion cherecterlatie I,.. = fl,,}
fCQV 11 (LD 32-112)
Melli; ....rml..lble forwlrd cur,.nt
J,=fm
mA
10'
10'
SO'
W'
60'
11)'
70'
10'
Ol'
90"
II
I
20
40'
60
80
10-'
100 O(
1.4 \6 t8 2.02.2 2.42.621 103.2 3.4163.& y
~T
-V,
Cepecltltllce C. f(VJ.I
cav 11. LO 32
,F
'!.
SO
'!.
110
1
110
v,
100
Frt-........-I-.L.t...:J
I,
~
r 100 r--I
80
80
0
: f:F~
20
0
10
0
t-
_ 10°
_ v,
1
LL _
I
10- 1
t
so
15
101y
50
10
75
1000(
15
Wav.-.n,th at ....k ,ml..lon
Perm. pul.. hind lin, eepeblllty
A_=fjT_}
mA 1.=flt);."'p'rlm".r;T_ .. 26"C
,,'
AJINIo 680
670
660
.-~ ~
.50
r-
."
.-1-
.'0
.2b
6"
600
75
--r..
690
r
50
o
25
SO
7S
'100 "C
-,
150
lO' . .
lODGe
litronix
A Siemens Company
CQY 13 (LD 36A/-1/-2) SERIES
CQY 33 (LD 36C) SERIES
YELLOW T 1 LED LAMP
Package Dimensions
I
!g
t:~
Are8 not clear
.026 (0,65)
At
.020 10.5)
~~~
-F,F======:=f'~1I--4--r9:$
.130
13.31
.122
(3.11
//
Clip #004-9016 Black
#004·9015 Clear
Cathode
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
V,
h
Reverse voltage
Forward current
Surge current (t;$1 !lsI
Plot
5.0
60
1.0
-55 to 100
100
200
RthJarnb
375
Apeak
590
iFS
Storage temperature
TStOf
Junction temperature
Power dissipation
Thermal resistance
junction to air
T,
V
mA
A
°c
°C
mW
K/W
FEATURES
• Yellow Diffused Lens
Wide Viewing Angle ±35°
cav 13 (LD 36A/-1/-2)
• Clear Yellow Lens Moderately Wide
Viewing Angle ±25°
cav 33 (LD 36C)
• T 1 Size
• %" Minimum Lead Length
• Front Panel Mounting
Snap-in Mounting Clips Available
Clip/Collar #004-9015 Clear
#004-9016 Black
• I/C Compatible
DESCRIPTION
The CQV 13/33 Series is a high efficiency
light emitting diode lamp fabricated with
TSN (transparent substrate nitrogen) technology _The yellow diffused plastic lens
provides wide viewing angle for front panel
applications_
Characteristics (Tomb = 25°C)
Wavelength at peak emission
Half angle
(limits for 50% of luminous intensity Iv)
COV 13 (LO 36A/·l/·2)
COV 33 (LO 36C)
Forward voltage (IF 20mA)
Reverse current (VR = 5 V)
Rise time
Fall time
Capacitance (VR = 0 V)
o
C!)
z
.075
~
.010
Q.
FEATURES
• T1 Package Size
• IC Compatible
• Wide viewing angle
• Low power consumption
• Mounting clips available
DESCRIPTION
The OL-31, a T1 lamp, is a high brightness orange TSN (Transparent Substrate Nitrogen) technology,. solid state
lamp which emits light in the orange
region with good off-angle viewing.
The lamp is in a lightly diffused orange
case.
Maximum Rallngs
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . .. l00mW
Derate Linearity Irom 25" C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1.3 mW/" C
Continuous Forward Current ................................ 40 mA
Operating Temperature.... ........ .... .... .....•... -55" to +l00"C
Storage Temperature ............................... -55" to +l00"C
Peak Inverse Voltage ........................................... 3.OV
Lead Soldering Temperature
IV16 inch from case) ............................... 5
sec @
260° C
Opla-Eleclronlc Characlerlsllcs @ 25° C
Parameter
Luminous Intensity
OL 31-2
OL 31-4
Forward Voltage
Reverse Current
Peak Emission Wavelength
Viewing Angle
Tell
Min
T,p
MI.
1.5
4.0
3.0
6.0
1.8
2.7
0.1
100
615
35
Specifications subject to change without notice.
159
Unit
Condition
mcd
IF = 20mA
IF = 20mA
IF = 20mA
mcd
V
p.A
VR = 3V
nm
degrees
TYPICAL OPTO-ELECTRONIC CHARACTERISTICS CURVES
LUMINOUS INTENSITY VS
VIEWING ANGLE
SPECTRAL DISTRIBUTION
100"
100
I'..
\.
90
80
70
/
80
50
/
/
\
1\
\
/
20
10
V
570
\
1\
/
30
\
\
\
\
'\
/
580
\
1\
"-....
590
600
610
620
630
640
650
\
r-- I - -
660
670
'\:
WAVE LENGTH
(NM)
o
""-
100
/
/
80
...
""
r-.....
>iii
z
C
.....
..
..:5
'"...0
'"
...
..
Z
40·
SO· 60·
i"-:
.........
60
!:
0:
0:
::>
>
U
0:
30·
120
10
"
20·
LUMINOUS INTENSITY VS
AMBIENT TEMPERATURE
FORWARD CURRENT VS
FORWARD VOLTAGE
10
""" ........
10·
;:
10
•
40
0:
10
20
o
1,4 1.6 1,8 2,0 2,2 2,4 2,6 2.8 3.0 3,2 3,4 3,6 3,8 V
o
FORWARD VOLTAGE
25
TEMPERATURE
160
50
75
100
70" SO·
litronix
YL·212
YL·4484
A Siemens Company
YELLOW T1 LED LAMPS
Package Dimensions In Inches
OJl6OR
I
FEATURES
• T1 Package Size
• 1 Inch Leads
• Both Types Can Be Front Panel
Mounted
• Snap In Mounting Clips Available
• IC Compatible
Maximum Ratings
Power Dissipation @25·C ....................... 120 mW
Derate Linearly from 25·C ................. -1.6 mW/·C
Storage & Operating Temperatuare ...... -55·C to +100·C
Lead Soldering Temperature
(1116 In. from case) ...................... 5 sec @ 260·C
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . .. 5.0 V/3.0 V
Continuous Forward Current. . . . . . . . . . . . . . . . . . . . .. 30 mA
Opto-Electronlc Characteristics (@25
DESCRIPTION
Both types are TSN (Transparent
Substrate Nitrogen) LED lamps with
yellow diffused lens. The YL·4484 is
a low price commercial grade
device. The YL·212 is a higher
brightness lamp with minimum light
output specified.
Parameter
·e)
Test
Min Typ Max Unit Condition
Luminous Intensity
YL·4484
.05
YL·212
1.0
Emission Peak Wavelength
Spectral Line Half·Width
Forward Voltage
Reverse Leakage
YL·4484
YL·212
2.0
1.8
585
35
2.4
mcd IF =20 mA
mcd IF =10 mA
nm
nm
3.5
V IF =20 mA
0.1
0.1
100
100
pA
pA
VR =3.0 V
VR =5.0 V
Specifications subject to change without notice.
161
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
RELATIVE LUMINOUS
INTENSITY VS
FORWARD CURRENT
RELATIVE LUMINOUS
INTENSITY VS ANGLE
100
~
>>-
~
~
80
r-...
,.
r,
\
60
40
g
2C
>
;::
~v
t5
;;
w
J
T..,"'25"C
\.
to
t-....
/
.5
V
/
40
20
60
'0
IF-FORWARD CURRENT-rnA
NUMBER OF DEGREES OFF ANGLE (%1
FORWARD CURRENT
VS
FORWARD VOLTAGE
<
"
10
80
SPECTRAL
DISTRIBUTION
,.
to
E
>-
[f;
0.8
15
a:
a:
a 1.
0.6
o
~
I
0.4
11
a:
12 ,
0.2
.J
1.0
1.5
2.0
530
2.5
550
570
590
610
3,0
WAVELENGTH
VF - FORWARD VOLTAGE - V
Mounting Information; VL-212 and VL-4484
The clip mounts in a .203" dia. hole and fits a .062" panel thickness.
BLACK CLIP: 004-9011
162
X !nm!
630
litronix
GL·211
GL·4484
A Siemens Company
GREEN T1 LED LAMP
Package Dimensions in Inches
(>.0,'"
I
0.200
*i
CATHOOE
LEAO
~~
SQit TT
1"0
\
40
~
/
10
>=
/V
r-...
20
,..,/
15
20
60
40
80
20
25
IF-FORWARD CURRENT-mA
NUMBER OF DEGREES OFF ANGLE (%)
FORWARD CURRENT
VS
FORWARD VOLTAGE
!"'ffi
SPECTRAL
DISTRIBUTION
2.
lO
15
a:
a:
06
13
~
10
1
~
a:
Ii',
II
0.8
5
....
0.2
/
.5
1.0
1.5
2.0
2.5
1
04
1\
510
3.0
530
550
570
WAVELENGTH
VF - FORWARD VOLTAGE - V
Mounting Information: GL·211 and GL·4484
The clip mounts in a .203" dia. hole and fits a .062" panel thickness.
BLACK CLIP: 004-9011
164
590
iI!nm)
30
litronix
RL·T1
A Siemens Company
RED LED LAMP
Package Dimensions in Inches
z
l~
(!)
illo
-: 0rI
~
z
a:
I
r-
o
Cathode
Lead
~
I-
nt~f
~ -t_~.Or50_!·020
o
z
I
I::::>
o
(!)
z
~J:
t,~
a..
I
(I---------r,
.125
d,a.
FEATURES
•
I
.200 ±.020
I
Miniature Size (T·1 Lamp)
•
1 Inch Leads
•
75 Mil Lead Spacing,
No Standoffs, No Flange
•
Low Power Consumption
•
IC Compatible
•
Economical Molded Plastic
Package
DESCRIPTION
The RL·T1 is intended for high volume
usage in array and indicator light
applications requiring a small
flangeless lamp at low cost.
Maximum Ratings
Power Dissipation @25"CAmbient ....................... 80 mW
Derate Li nearly from 25 'C . . . . . . . . . . . . . . . . . . . . . . . . . .. -1.1 mW/'C
Storage and Operating Temperature ............... -55 to +100'C
Continuous Forward Current. . . . . . . . . . . .
. .. 40 mA
Peak I nverse Voltage. . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. 3.0 V
Opta-Electronlc Characteristics (@25 0c)
Parameter
Reverse Current
Forward Voltage
Luminous Intensity
Emission Peak
Wavelength
Min
Typ
Max
Unit
Test
Condition
2.0
0.3
100
1.6
0.8
nA
V
mcd
-3.0 V
IF =20 mA
IF =20 mA
650
nm
Specifications subject to change without notice.
165
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. FORWARD
CHARACTERISTICS
FIGURE 2. LUMINANCE
V8
'OKIIII
'\
I ,.
!'''III
•
D.
8
1"-
D.'
D. 5
- -
-75 50 25 0
1.4 1.1 1.8 2.0 2.2 2.4 U U 3.0 3.2
25
SO 15 100 125 150
T I , JUNCTION TEMPERATURE lOCI
VOLTAGE
FIGURE 3. LUMINANCE
FORWARD CURRENT
'\
D. 7
0
FORW~RD
'\
0
I,
FORWARD CURRENT ...
TJ
2.0
FIGURE 4. SPECTRAL
DISTRIBUTION
V8
. ff~
'.0 ""-'--'-"''1<-r--'-'--'-'
DBf-t-+++-H-++-H
J--
-~-
D.' H-+-+·-t-Hc-+-+--t-I
:: ::=:-:+::=-.r+--:;_~tI-:~_I-~:+-l-=1
1.0
10
TOO
lK
~~~8~~U-~~~~~~"~~700
10K
~.
IFmA (pulsedl
WAVE LENGTH (nml
The effect of junction heating is not reflected in figure 3 as pulse width and duty cycle were limited
to prevent heating effects. However, junction heating can cause reduction in luminance as evidenced
in figure 2. To estimate output level, average junction temperature may be calculated from
TJ(AVI = TA+IIJAVFIFD
Where 0 is the duty cycle of the applied current IF' IIJA = 350°C/W (max). This calculation should be
limited to pulse durations of less than 10 ms to avoid errors caused by high peak junction temperature.
166
litronix
RL·50
A Siemens Company
RED MINIATURE AXIAL LEAD LED LAMP
Package Dimensions In Inches
I
FEATURES
•
High Luminance -
•
Optimum Packaging Design for
Maximum Strength at Minimum
Linear Spacing
•
Operates from 5 V IC Logic Supply
•
Small Size
•
High Reliability
Typically 0.8 mcd
DESCRIPTION
The RL-50 is intended for high
volume usage In array and indicator
light applications. Major
advantages of this device are high
luminance at lower currents, long
life and low cost.
Maximum Ratings
Power Dissipation @ 25°C Ambient • . • • • . • . . . . . 80 mW
Derate Linearlv From 25°C . . • • . • . • . . • • • . -1.1 mWfC
Storage and Operating Temp Range . • • . . . • . . ~ to 100°C
Continuous Forward Current • • • . . . • . . • • • . . . •• 40 rnA
Peak Inverse Voltage • . • . . . • • . • • . • • • • • . . • • •. 3.0 V
Opto-Electronic Characteristics (@ 25°C)
Parameter
Reverse Current • . . . . .
Forward Voltage. . . . . •
Luminous Intensity .•..
Light Rise and Fall Time .
Note:
RL-50 Water Clear Lens
RL-50-01 Red Diffused Lens
RL-50-02 Red Clear Lens
Min
0.3
Typ Max
Unit
100
1.6
IIA
2.0
O.S
V
mcd
1.0
ns
Teet
Condition
-3.0 V
IF=20mA
IF = 20 mA
Specifications subject to change without notice.
167
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. FORWARD
CHARACTERISTICS
FIGURE 2. LUMINANCE
VSTJ
2.0
10K
lK
-
1'\
~o
'\
~~
§~
100
cz::o
1.0
w~
0.9
0.8
!Ow
,,~
2.:<
<2
~~
0
~Z
- - I-
O. 7
"\
0.6
0.'
1
1.4 1.6 1.8 2.0 2.2 2.4 2,6 2.8 3.0 3.2
'\
-75 -50 -25 0
25
50 75 100 125 150
Ti , JUNCTION TEMPERATURE (OC)
FORWARD VOLTAGE
FIGURE 3. SPECTRAL
DISTRIBUTION
1.0
/
0.8
0 .•
0.4
II
0.2
o
600
620
1\
640
660
680
)., WAVELENGTH !nm)
168
700
litronix
RL·54
A Siemens Company
RED MINIATURE AXIAL LEAD LED LAMP
Package Dimensions in Inches
I
FEATURES
•
Low Cost
•
Optimum Packaging Design For
Maximum Strength at Minimum
Linear Spacing
•
Operates From 5V IC Logic Supply
•
Small Size
•
High Reliability
•
Red Diffused Lens
Maximum Ratings
Power Dissipation @2S"CAmbient ................. 80 mW
Derate Linearly from 2S"C .................... -1.1 mW'·C
Storage & Operating Temp. Range... . . ...
-40·C to +80·C
Continous Forward Current . . . . . . . . . . . . . . . . . . . . . . .. 40 mA
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 3.0 V
Opta-Electronic Characteristics (@25 ·C)
Parameter
DESCRIPTION
The Red·Lit 54 is intended for high
volume usage in array and indicator light
applications. Major advantages of this
device are high luminance at lower
currents, long life and low cost.
Reverse Current
Forward Voltage
Brightness
Light Rise
and Fall Time
Min
Typ
Max
2.0
O.OS
100
1.6
0.8
1.0
Test
Conditions
p.A@-3.0V
V@I F=20 mA
mcd@IF=20mA
ns
Specifications subject to change without notice.
169
litronix
RL·55
RL·55·5
A Siemens Company
RED MINIATURE AXIAL LEAD LED LAMP
Package Dimensions in Inches
°Bl
CATHODE~'"0
rr·
o9
MARK
.042
.110
o~ =Jl:T
.850
TYP
.020
a~~
L
L
.025
FEATURES
• 2 Gate Load Bright Light - .4 mcd
at 3 mA
• High on Axis Intensity - 3 mcd at
20 mA
• Optimum Packaging Design for
Maximum Strength at Minimum
Linear Spacing
• Operates from 5 V IC Logic Supply
• Miniature Axial Lead
• High Reliability
• RL·55·5 - Low Cost Version
.020
Maximum Ratings
Power DiS!lipation @ 25°C Ambient . . . . . . . . . . . . . . 80 mW
Derate Linearly From 25°C . . . . . . . . . . .. -1.1 mWfC
Storage and Operating Temperature . . . . . . . . -55°C to +100°C
Continuous Forward Current . . . . . . . . . . . . . . . . . . 40 mA
Lead Solder Time@ 260°C (1/16" from case) . . . . • . . • . . 5 sec
Peak I nverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 3V
Peak Forward Current
(11's pulse, 0.1% duty cycle) . . . . . . . . . . . . . . . 400 mA
Opto-Electronlc Characteristics (@25 0c)
DESCRIPTION
The RL·55 is a Gallium Arsenide Phosphide
LED lamp that has high on axis intensity at
low current (3 mAl. long life and low cost.
It uses a .dark red diffused lens and provides
a full .080" flooded light with good contrast.
When operated at high current (20 mAl the
RL-55 has a very high on axis intensity of
3 mcd. Applications include mounting on
P.C. boards at low current as diagnostic and
circuit status indicators. Function and low
voltage indicator on battery powered equipment such as calculators, watches and portable
DVM's and in the higher current mode as a
back light.
'
Parameter
Test
Min Typ Max Unit Condition
Reverse Current
Forward Voltage
Luminous Intensity
RL-55
2
0.8
RL-55·5
Capacitance
Light Rise and Fall Time
Peak Emission Wavelength
Spectral Line Half·Width
1.6
3
1.5
20
1.0
650
40
10
2.0
p.A
V
VR =3 V
IF =20 mA
mcd IF =20 mA
mcd IF =20 mA
pF V=O
ns
nm
nm
Specifications subject to change without notice.
170
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
RL-55
(25°C Free Air Temperature Unless Otherwise Specified)
FIGURE 2. RADIATION
INTENSITY VS. ANGLE
FIGURE 1. RADIATED
POWER
100
V
90
30"
80
70
40"
60
50
50"
40
60"
30
20
10
o
fI
PRECENT OF RADIATED
POWER INTO CONE OF
HALF ANGLE e
70'
80"
90"
II
10"
30"
50"
70"
.5 .4 .3 .2 .1
90"
CONE OF HALF ANGLE €I
FIGURE 3. SPECTRAL
DISTRIBUTION
1.0
0.8
0.6
\\
0.4
0.2
o
600
1/
620
640
660
680
700
WAVELENGTH - A (nm)
171
- - - - - - ._--- .
l>
z
~
I
litronix
YL·56
YELLOW
A Siemens Company
GL·56
GREEN
MINIATURE AXIAL LEAD LED LAMP
Package Dimensions In Inches (mm)
"'~h ~
~
---L. (3.05)
o
~
.850 TYP
(21.6)
i(]=T t
~.010
(.254)
~
1'- ]1
~(229)~
.090
MAX
CATHO~OE
MARK
il
.025
(.635)
0
G020
(.508)
Maximum Ratings
FEATURES
•
High on Axis Intensity
•
Optimum Packaging Design for
Maximum Strength at Minimum
Linear Spacing
Power Dissipation @I 25°C Ambient . . . . . . . . . . . . 80 mW
Derate Linearly From 25°C . . . . . . . • . . . . -1.1 mWfC
Storage and Operating Temperature. . . . . . .. -55°C to +l00°C
Continuous Forward Current . . . . . . . . . . . . . . . .. 22 rnA
Lead Solder Time@l260°C (1116" from casel. . . . . . . .. 5 sec
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . .. 3V
Peak Forward Current
(11'S pulse, 0.1 % duty cycle) . . . . . . . . . . . . . . . 250 rnA
• Operates from 5 V IC Logic Supply
,. Miniature Axial Lead
•
High Reliability
Opto-Electronlc Characteristics (@ 25°C)
Parameter
DE8.CRIPTION
The GL-56/YL-56 are Gallium Phosphide
LED lamps that have high on axis intensity,
long life and low cost. They use diffused
lenses and provide a full 0.080" flooded
light with good contrast. When operated at
high current (20 rnA) they have high on
axis intensity. Applications include
mounting on P.C. boards at low current
as diagnostic and circuit status indicators.
Luminous Intensity
YL·56
GL·56
Forward Voltage
YL-56
GL-56
Reverse Current
Peak Emission
Wavelength
YL·56
GL-56
Min
Typ
T..t
Max Units Condition
.05
.05
2.0
1.0
mcd IF=20 mA
mcd IF=20 mA
2.4
0.15
V
V
,.A
565
565
nm
nm
2.2
3.5
3.5
IF=20 mA
IF=20 mA
VR =3V
Specifications subject to change without notice.
172
litronix
LD 460 SERIES
A Siemens Company
RED MINIATURE LED
SINGLE LAMP AND ARRAYS
Package Dimensions in Inches (mm)
111
12.14)
OIl
.'"'
(2.11
12.241
fl"
.0I900~1 ,4--- '
OUtl.41
.031(1)
.000(O.~ ....
.027(0,11
.02410,11
.05511,41
., r
.IJ3I(1I
cr'J
10,HUO,'S,
Spacing 0.1 (2,54)
Maximum Ratings (Individual Diode)
FEATURES
Reverse voltage
Forward current
Surge current (t~ 10 !lsI
Storage temperature
Junction temperature
Soldering temperature in a 2 mm distance from
the case bottom (L 3 s)
Power dissipation (Tamb "" 25° C)
• White Diffused Lens, Emits Red Light
• Miniature Size
Thermal resistance
Junction to air
Junction to solder pin
v
T,
5
35
1.0
-30 to +80
80
T,
Ptol
230
85
'C
RthJamb
750
650
K/W
K/W
V,
I,
'FS
Tstor
R1hJL
mA
A
'C
'C
mW
• Selection of 2 thru 10 Diode Arrays As
Well As A Single Device
• 1/10" Lead Spacing
• End Stackable to Arrays of Any Length
• IIC Compatible
DESCRIPTION
The LD 460 Series are red gallium arsenide
phosphide LED solid state lamps. They
have a white diffused plastic encapsulation
formed as a lens where the light is emitted.
The single lamps may be used individually
in such applications as behind the panel
troubleshooting locators or stacked together
pr along with their counterpart arrays to
form lines or other patterns. The arrays
can be end stacked to form position indio
cators of any length for such applications
as meters and scales.
Characteristics (Tamb = 2SoC)
Wavelength at peak emission
Dominant wavelength
Apeak
Half angle
(limits for 50% of luminous intensity Iv)
Forward voltage (IF = 20 mAl
Reverse current (VA = 5 V)
Rise time
Fall time
Capacitance (VR = 0 V)
>"om
'I
VF
I,
If
If
Co
665 ± 15
645
50
1.6b2.0)
0.01«10)
5
5
40
Luminous Intensity
Type
LO 461
LO 462
LO 463
LO 464
LD 465
LO 466
LD 467
LD468
LO 469
LO 460
Number
of LEOs
1
2
3
4
5
6
7
B
9
10
Min
.6
.6
.6
.6
.6
.6
.6
.6
.6
.6
Unit
mod
mod
mod
mod
mod
mod
mod
mod
mod
mod
Test Condition
20 rnA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
20mA
Specifications are subject to change without notice.
173
degree
V
eA
pF
I
"'d"t6oftcM"~ic
..
..... tlve ....ctN' ....... ionl,.,·'(J.)
I,.,=f(",)
LO 461
1110
1'1
'.
i
Lumlnou.l.... n.1ty I." '(IF)
20'
\
IJ
J
I
I
.0
30'
1
40
40'
II
\
50'
50'
\
20
50'
7"
j
0 ......
600
620
64Il
660
80'
gO'
-. "
f8l
100
100"
120M!
M......,...5uJb" fofw.nI c ...... nt
IF-'(TJ
mA
mA
40
10'
I,
1
JO
f--t¥.+-+--t--t
I
I
10'
10"1
100 DC
1.1
lZ 1.3
~-r
I.~
l5
16 t7 I.B l.9
z.o
V
~-v,
L .. mlnOI,l'lnt.n.ity~ "', (To..b )
'10
0
\.4
110
I,
c
T,W
1"
0
30
"- "-
100
1
,
f'\..
I'.
80
"f'\.. f'\..
60
0.6 H~++-H+++-H
"-
40
0
10
0
zom
30
010 2030 I,QSO 60 70 90
I
50
O(
...
~-r
no
W.w.....th.t ....k em __1otI
J.p--
J.-~
550
540
f-+-
5JO
+-
5ZO
-+500
o
Z5
50
75
m' ..
·:.w"'m':i.WlJllm':i·'-m-l'-m-!-'-m+'w.m, 5
1OO 0 t
-~
-t
176
50
'15
-~
-~
.. ·c
litronix
LD 480 SERIES
A Siemens Company
YELLOW LIGHT EMITTING DIODE
SINGLE LAMP AND ARRAYS
Package Dimensions in Inches (mm)
082
(2,1)
"',094 ...
(2,4)
055 (1.4!
-039(1!
019(0.5)
015(0.4) . . . .
027(0.7)
024(0,6)
055(1,4)
~9(~
S~,crng
0.1 (~,54\
Maximum Ratings
Reverse voltage
Forward current
Surge current (t:;; 10 1-\5)
Storage temperature
FEATURES
Junction temperature
Soldering temperature in a 2 mm distance
from the case bottom (r -;, 3 sl
Power dissipation (TL = 25"C)
• Yellow Diffused Lens
Thermal resistance
Junction to air
Junction to solder pin
• Miniature Size
• Selection of 2 Through 10 Diode
Arrays as well as Single Device
• 1/10" Lead Spacing
• End Stackable to Arrays of Any
Length
•
IIC Compatible
DESCRIPTION
The LD 480 series are yellow gallium
phosphide LED solid state lamps. They
have a yellow diffused plastic encapsula·
tion formed to a lens where the light is
emitted. The single lamps or arrays may
be used individually Or stacked together
to form lines of any lengths. Typical
applications are position indicators such
as meters and scales.
Tstor
-30to+80
Tj
80
T,
Ptot
230
85
"C
mW
RthJamb
750
650
K/W
K/W
RthJl
Characteristics (Tamb ~ 25°C)
\,
Wavelength at peak emission
Dominant wavelength
Half angle
(limits for 50% of luminous intensity Iv)
Forward voltage (IF = 20 mAl
Reverse current (VR = 3 V)
Capacitance (VR = 0 V)
Rise time
Fall time
5
25
0.5
V
mA
A
"C
"C
VR
IF
'FS
..,
,"om
'"
VF
IR
Co
575 ± 15
573
degree
V
50
2.4 (~3.0J
0.1 (;;;:10)
45
50
50
"A
pF
ns
Luminous Intensity
Type
LD 481
LD 4B2
LD 4B3
LD4B4
LD 485
LD4B6
LD 4B7
LD 4BB
LD 4B9
LD 480
Number
of LEOs
1
2
3
4
5
6
7
B
9
10
Min.
Unit
Test Condition
.6
.6
.6
.6
.6
.6
.6
.6
.6
.6
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
mcd
20
20
20
20
20
20
20
20
20
20
Specifications are subject to change without notice.
177
I
me'
'I.
I r•l
LumlnoualnUlnlffy I • .. I (IF)
10'
100
90
1'0
I \
70
3D'
60
\
50
40
!\
30
~ttt
10
5'"
\
50'
7'"
~~~~Wf=18O'
l-90
"-
0
G
~~~~~~~~~
550560 570 511l59D 600 610 620 630 640 650 rm
Max. p.lrmluMtIe forward current
IF= I(T)
.A
10'
.A
30
~
/
~~hJt:650KIW
IS
'tllJamII: 7ffiK/W \
ID'
\
20
40
\
60
BO
_I
100 DC
'"
Forwlrdvoltll••
LD 48'
I,B
v,
c
I'
0
3JJ Ji. 3,B 4,1 V
-V,
LumlnOU.lnt.nllty~ = , (T... ~ )
'I.
110
11··- I
c----
-
I
Vfl50
1,6
~=fIT"'b)
%
110
I)
- t-- -
......,
r 100
9
I......
i'.
80
0
"'"
t- t- t60
80
0
-t- -
40
0
0
40
10
-
-+_.
10
,,'
--V,
15
1000(
75
50
75
- - I...
W.".length.t peak eml..lon
nm A. p. .k -/1T..... 1
.A
"'rm. pulM hind Un, CII..-bliity
IF - fUJ;v = parameter; Tl = 25"C
m'
610
APMk 610
1
600
590
-
580
~
570
i
.. 1-
--
560
550
- - - --t-
540
530
o
15
50
75
100
.' 10':;""""10"""'""."'·'""".-:'-10-:,-.7,""'.,
De
--I
178
s
100 DC
litronix
LD 121
LD 161
LD 171
RED
A Siemens Company
YELLOW
GREEN
SUB MINIATURE LED LAMP
Package Dimensions
J~L:ii
(2.05)
I
.065
(1,65)
11
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are In inches
Maximum Ratings
Reverse voltage
Forward current
Surge current (t~ 1 ~s)
FEATURES
•
Red Clear Lens - LD 121
Yellow Clear Lens - LD 161
Glass Clear Lens - LD 171
• Sub Miniature Size I1mm/.039" Thick)
Smallest LED Lamp Available
•
IIC Compatible
Storage temperature
Junction temperature
Power dissipation (Tamb = 25°C)
Thermal resistance junction to air
VR
'F
5
15
V
mA
i FS
350
A
T.tor
-40 to +80
80
'c
RthJamb
35
1500
K/W
~ot
Characteristics (Tomb = 25°C)
mW
LD171
LD121
Wavelength at peak emission
Forward voltage (IF 20 rnA)
Reverse current (VR = 5 VI
1560 ± 15
nm
Rise time, Fall time
Capacitance (VA = 0 VI
50
145
ns
=
V
A
JO
Aperture cone (half angle)
(Limits for 50% of luminous intensity)
Luminous Intensity
DESCRIPTION
The LD 121 and LD 161 are light emitting
diode lamps fabricated with TSN (trans·
parent substrate nitrogen) technology. The
LD 171 is a gallium phosphide LED lamp.
The extremely small size of these lamps
make them suitable for use within tight
space confinement or applications requiring
very close spacing of several LED lamps.
'c
Type
Min
Unit
Test Condition
LD 121
LD 161
LD 171
.63
.63
.63
moo
moo
moo
10mA
10mA
10mA
Specifications are subject to change without n.otic •.
179
pF
degree
LD121==================================================================
........ .....,.. ............. '(1)
Mu. perm ....ble forWard current
%
110
;:
IF
=f(
T....b
••'0'
)
Forwerd . . . . . , -'(V.I
I - -,1\
I,
'
..
RfttJU
50
10
40
1\
30
['...
1/
20
=1500K/W
1\
1/
'0'
\
10
o
6DO
620
640
660
-.
680
100
o
720 n..
o
~
40
"., 11
110 \6 1.8 ZD 2.2 2,J. 2.6 z.a 3D 3.2 141611 V
BOO[
-V,
- r.....
Forw... vott...,V.~,o" f(T-.)
~C"'IV.I
LD 121
pF
SO
LumlnOUlllntltMlty ~ .. II T..)
'4
~
%
"0 ,-,--,---,--,-,--,--"
"0 r-T,-r 1~ITTl
,..-+- +~!-t-::
I,
1"0
1"0 I-~-r'-~-+--""
"
0
I-+--!--""'",--t---t----t-j
"
60
60
0
"
0
"
0
10"
10°
15
10'V
50
-_:v'R
.,d
7S
--'...
1II00(
15
50
luminoul intenaity 1,,=((1.)
10'
,
A.PlOk
680
t
670
1
~01
0,02
0
"
I-t-
650
.4O~
.'"
100°'
Perm. pI.Il. . handling capability
IF=f(r)
mA 'Tastgrad D=Parameter; Tu=25"C
10
69.
1.10'
75
--r,.,.
~~..-
F'~
0
2~
0,2
0
10°
10'
-_I,
DC
.10
10-4t;ffiI9ffiI9ffil
10-'
0,5
0
.,.
10 1 IlIA
o
,I
25
110'(
SO
- I...
180
,
,
LD161=============================================================
.
MIx. p.rmlulbl. forward currant
r.=f( r_ ..
......... .,...,.. ............ ·'111
...
mA
100
2<1
1\
I
f-
\
60
..
-
I
""\
RttlJU ",1500K/W
I
1
\.
I
I
!
I
2'
/
10
•
550
S70
\J,.
I'
590
610
-,
630
650
o
670nlJl
C.pacltance C = f (VII)
40
Forwent voIteee
--V,
80"(
v,~.... f(T.-)
_I.
%
110
OF
5
•
110
I,
I~O
c
t'
0
Lu......... ...........,
k
I
L~•• "'11-.)
r-... I....,
'"
80
I
0
I
10' ..LJJ,.LlII:-::2J)C:U~,.-,J.26LU:':-!3D':-U:':-:3IoL16:':-:1lI V
1\
o
~
10'"
1
\
101~.
1,.'
1
SO
,.
I,
........... '.·'1*
I
.......
60
0
40
0
y
r-r-r-
- - -
40
10
r--.
10
0
50
so
75
- - r...
--Y"
1110'(
Perm. put.. h.ndllnl Apablilly
IF· fit);. - P8,.meter";
21°C
T_·
Radiation ch.ract.rl.-:lo
1,., ""f(op)
n.
62.
590
---
f-
510
5SO
•
54
,.., c=;J:::t:=::j:rrnltl=::j:ttlb
10·\
10°
10'
102mA
--I,
181
530
o
IS
50
75
100"(
'lt1 rI
-_T
".2
fl.
LD171===============================================================
Forward volt. . . IF = II V,)
oA
%
III
1,..90
III \
1
I,
80
70
- - -
.
J
!
JO
10.
m
,
IJ
10
t-
1\
~ rjI
H{±r
-.
'\
o
5305'0550561157058059061116111620630l1li
I'
'10
r--
800(
40
Lumlnouslntenllty 1.~1" - II r....."
"
%
lO 171
50
0
\
o
F~ard voltage v,V:.o .. It T.....,)
CepacltenoeC= flVN
pF
c
\
I
:
-
40
/
m'
1\
RltUu =1500K/W
i
-.-
_..
SO
,
'\
--t"\.
1
f-
80
LO 171
II'
~
~
I ;~t
T
-+~
i'OO
•
80 l - f- -
0
l - f- f-.
'10
-,--
-+-
._-
f-t-
.--
I.
i~o
I'
i'..
80
l - I- t--
,-- -
60
t-...
60
"'
0
1
40
l - I- f- I111 f--f--
0
-+
101V
20
1
l0
40
---
I
SO
IS
75
1000(
IS
50
--r...
Lumlnouslntenelty'I,,-I(I,)
75
-w
lOO'C
Perm. pula handling C8P11blllty
Wavelength at peek emlNion
.l_k=f(T..-}
IF-Itt)
Tastgrad D .. Parametef;T_ b =2S'C
n.
!IIO
",,..580
1
570
560
-
~ l-
I-
530
500
o
IS
50
75
1000(
11-·
'I)')
1)-1
1)'"'
--T
182
"
II s
litronix
FRL·2000
A Siemens Company
RED T1 % FLASHING LED LAMP
Physical Dimensions in Inches (mm)
094R (2 3911)
REF
-~-
I
I
I
FEATURES
• Built·in IC Chip, Flashes Lamp On
and Off to Attract Attention
• Pulse Rate - 2.5 Hz
• T1 3/. Size
• Large Full Flood Radiating Area
• 1.2 mcd @ VF=5 V
Maximum Ratings
Operating Temperature ....
Storage Temperature ..
Lead Soldering Temperature
(1116 in. from case) ....
Operati ng Voltage ..
Peak Inverse Voltage .................. .
.... Ot070'C
-20to +100'C
. ... 5 sec @ 260'C
. ................ 7 V
...... 0.4 V
Opto·Electronic Characteristics (@ 25°C)
• IC Compatible
Parameter
DESCRIPTION
The FRL·2000 is a gallium arsenide
phosphide solid state lamp with a red
diffused plastic lens. The built·in IC
flashes the lamp on/off and can be
driven directlly by standard TTL and
CMOS circuits, eliminating the need
for external switching circuitry.
Luminous Intensity
Emission Peak Wavelength
Spectral Line Half-Width
Operating Voltage
Peak Current
(50% Duty Cycle)
Pulse Rate
Pulse Rate (O'C to 70 'C)
Test
Condition
Max
UnltD
5.25
mcd
nm
nm
V
VF =5 V
4.75
1.2
650
40
5.0
1.5
20
2.5
4.5
mA
Hz
VF=5 V
VF=5 V
5.8
Hz
VF =5 V
Min Typ
0.8
1.0
35
Specifications subject to change without notice.
183
TYPICAL
OPERATING
CHARACTERISTICS
FREQUENCY VS VOLTAGE
CURRENT VS VOLTAGE
o
4
5
6
4
5
6
VOLTAGE (V)
VOLTAGE (V)
TYPICAL
APPLICATIONS
+5V
+V
BUFFER
GATE
DRIVEN BY TTL OR
MOS BUFFER GATE
FOR OPERATION
AT GREATER
THAN 5 VOLTS
+6.5V
+5V
TYPICAL CIRCUIT
TWO LEOs
FLASHING TOGETHER
TYPICAL CIRCUIT
TWO LEOs
FLASHING ALTERNATELY
184
litronix
FRL·4403
A Siemens Company
RED FLASHING LED LAMP
Package Dimensions in Inches
.094R
REF
I
~L;;;;:~
T
.050
MAX.
t
.230
±,OlO
*
FEATURES
• Built·in IC chip. flashes lamp
on and off to attract attention.
• Pulse rate - 2.5 Hz
• TI
* size
Maximum Ratings
.. O°C to 70°C
-20°C to +85°C
. 5 sec @ 260°C
Operating Temperature.
Storage Temperature . .
Lead Soldering Temperature.
(1/16 inch from case)
Operating Voltage . . . .
Peak Inverse Voltage . .
. .7V
.OAV
• 1·lnch Leads
•
Large full flood radiating area
Opto·Electronic Characteristics (@ 25°C)
• 0.5 mcd@V F = 5V
Parameter
• IC compatible
DESCRIPTION
The F R L-4403 is a gallium arsenide phos·
phide solid state lamp with a red diffused
plastic lens. The built·in IC flashes the
lamp on/off and can be driven di rectly by
standard TTL and CMOS circuits. elimi·
nating the need for external switching
circuitry.
Luminous Intensity.
Min
0.5
Emission Peak Wavelength.
Spectral Line Half·Width.
Operating Voltage.
Peak Current. . . . .
(50% duty cycle)
Pulse Rate . . . . . .
Pulse Rate (D· C to 70· C)
4.75
1.5
1.0
Typ
Max
1.2
650
40
5.0 5.25
20
:3
2.5
4.5
5.8
Test
Unit Conditions
mcd VF =5V
nm
nm
V
mA VF =5V
Hz
Hz
Specifications subject to change without notice
185
VF = 5V
VF ; 5V
TYPICAL OPERATING
CHARACTERISTICS
FRL-4403
CURRENT VS VOLTAGE
FREQUENCY VS VOLTAGE
6
_40
c
!
4
!i;30
Xi!
..!!i20
u
...
::iIO
o
4
5
6
4
VOLTAGE (V)
5
6
VOLTAGE (V)
+V
BUFFER
GATE
DRIVEN BY TTL OR
MOS BUFFER GATE
FOR OPERATION
AT GREATER
THAN S VOLTS
+5V
+6.SV
TYPICAL CIRCUIT
TWO LED's
FLASHING ALTERNATELY
TYPICAL CIRCUIT
TWO LED's
FLASHING TOGETHER
186
litronix
RLC·200
A Siemens Company
RED T1 3A CURRENT REGULATED LED LAMP
Package Dimensions In Inches
.....
I
dl
~oo
0.040
T""
1
O.025SQ
TVP-
1.00
~
CATHODE
T
~~
J:,t-T
FEATURES
•
•
•
•
•
•
T1 3t. Size
1 Inch Leads
Constant Intensity from 4.5 V to 12.5 V
20 mA typical forward current
1.2 mcd typical at VF 8.0 V
No resistor needed to operete up to
=
12.5 V
•
•
•
•
•
Front panel mounting
Large full flood radiating area
IC compatible
Snap In mounting Clip available
Red diffused. lens
DESCRIPTION
The RLe 200isa high brightness Gallium
Arsenide Phosphide solid state lamp con·
taining a current regulating integrated
circuit that provides a constant intensity
over a wide voltage range. The unit has
a large full flooded front radiating area
for wide angle viewing and can be easily
soldered directly to a PC board or
mounted in a panel with a snap in
mounting clip.
BOTTOM VIEW
Maximum Ratings
Power dissipation @ 25·C .. . . . . . . . . . . . . . . . . . 300mW
Derate voltage linearly from 25·C . . . . . . . . . . . . . ~.125VrC
Forward voltage @ 25· C . . . . . . . . . . . . . . . . . . . . . .12.5V
Storage and operating temperature . . . . . . . . . . -55 to +l00·C
Lead soldering temperature (1/16 inch from case) •• 5 sec.@ 260"c
Peek inverse voltage. . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Optoelectronic Characteristics (at 25°C)
Parameter
Min
Typ
Luminous intensity
Forward current
Emission peak wavelength
Spectral line half width
Reverse leakage
0.8
14
1.2
Max
Unit
mcd
20
650
40
24
0.1
100
mA
nm
nm
p.A
Test
Condition
VF-6V
VF -12.5V
VR - 3.0V
Specifications subject to change without notice.
187
TYPICAL OPTOELECTRONIC CHARACTERISTIC CURVES
FIGURE 1_ RELATIVE
LUMINOUS INTENSITY
VS_ ANGLE
100
.......
80
FIGURE 2_ SPECTRAL
DISTRIBUTION
1"-
60
\.
40
RLe-200
20
0.8
H-+-+++-1H-+-+---j
0.6
H-+-++-+-H-+-+---j
0.4
H-++It-+--t\-l-++-1
0.2
H-+--tf-+-+-+---Irl-+--1
0~~U-~~~~~
20
40
60
600
80
620
640
660
680
700
WAVELENGTH -;\ (nm)
NUMBER OF DEGREES OFF ANGLE (%)
FIGURE 4. LUMINOUS
INTENSITY VS. FORWARD
VOLTAGE
FIGURE 3_ FORWARD
CURRENT VS. FORWARD
VOLTAGE
50
3.0
45
2.7
40
2.4
35
2.1
30
1.8
25
1.5
1.2
20
15
0."
0.6
I
I
10
2
I
0.3
4
6
8 10 12 14 16 18 20
2
FORWARD VOLTAGE (V)
4
6
8 10 12 14 16 18 20
FORWARD VOLTAGE (V)
Mounting Information
The clip mounts in a _250" dia. hole and fits up to a .125" panel thickness. A
plastic collar is provided which fits over the back of the clip to lock the LED
securely against the panel.
BLACK CLIP AND COLLAR: 004-9002
CLEAR CLIP AND COLLAR: 004-9003
188
litronix
RLC·201
A Siemens Company
RED T1% CURRENT
REGULATED LED LAMP
Package Dimensions In Inches
J
/009"
I
+~r
I
I
T
0.030
__
~_I
0040_
TYP
I-
1
0.100
------.!..
~
0.Q25Sa _
TYP
n
r
1.00
CA,"ODE
~ u-~:~~;~ r
Jt-T
vS
l
1
FLAT DENOTES
1
.ri~
If'CD- +I IDI
~>-.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
T1 0;. size
1 Inch leads
Constant Intensity from 4.5 V to
16 V
10 mA typical forward current
0.7 mcd typical at VF 6.0 V
No resistor needed to operate up to
16 V
Front panel mounting
Large full flood radiating area
IC compatible
Snap In mounting clip available
Red diffused lens
=
HOOE
0,230
I
j
OIA
""
I
0,200
DIA
I
BOTTOM VIEW
Maximum Ratings
Power dissipation @ 25° C .. . . . . . . . . . . . . . . . . . 300mW
Derate voltage linearly from 50°C . . . . . . . . . . . . . -{).25Vfc
Forward voltage @ 25° C . . . . . . . . . . . . . . . . . . . . .. 16V
Storage and operating temperature . . . . . . . . . . -55 to +100°C
Lead soldering temperature (1/16 inch from case) .. 5 see.@ 260°C
Peak inverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
DESCRIPTION
The RLC 201 is a high brightness Gallium
Arsenide Phosphide solid state lamp containing a current regulating integrated
circuit that provides a constant intensity
over a wide voltage range. The unit has a
large full flooded front radiating area
for wide angle viewing and can be easily
soldered directly to a PC board or
mounted in a panel with a snap in
mounting clip.
Optoelectronic Characteristics (at 2SoC)
Parameter
Luminous intensity
Forward current
Emission peak wavelength
Spectral line half width
Aeverse leakage
Min
Typ
0.4
7
0.7
10
650
40
0.1
Max
14
100
Unit
mcd
mA
nm
nm
p.A
Test
Condition
VF =6V
VF = 16V
VA =3.0V
Specifications are subject to change without notice.
189
TYPICAL OPTOELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. RELATIVE
LUMINOUS INTENSITY
VS.ANGEL
100
FIGURE 2. SPECTRAL
DISTRIBUTION
......,
80
1.0
0.8
"
60
0.6
\
40
0.4
20
I
II
0.2
\
o
20
40
60
600
80
NUMBER OF DEGREES OFF ANGLE
640
660
680
700
WAVELENGTH -."" (nml
FIGURE 3. FORWARD
CURRENT VS. FORWARD
VOLTAGE
FIGURE 4. LUMINOUS
INTENSITY VS.
FORWARD VOL TAGE
20
1.5
18
1.35
16
1.2
14
1.05
12
0.9
1./
10
620
(%~
0.75
0.6
0.45
~
0.3
0.15
2
4
6
8 10 12 14 16 18 20
~
II
2
FORWARD VOLTAGE (V)
4
6
8 10 12 14 16 18 20
FORWARD VOLTAGE (V)
Mounting Information
The clip mounts in a .250" dia. hole and fits up to a .125" panel thickness. A
plastic collar is provided which fits over the back of the clip to lock the LED
securely against the panel.
BLACK CLIP AND COLLAR: 004-9002
CLEAR CLIP AND COLLAR: 004-9003
190
litronix
RLC·210
A Siemens Company
RED T1 CURRENT REGULATED LED LAMP
Package Dimensions in Inches
1
/'.000'
L
tUl·
~~
I
CATH~OE I
__ LEAO
SHORTER
~f~· f
_I ,,,,I
I
FEATURES
•
T1 Size
•
1 Inch Leads
•
Constant Intensity from 4.5 V
to 11 V
•
10 mA Typical Forward Current
•
No Resistor Needed to Operate Up
to 11 V
•
Miniature Size (T1 Lamp)
•
Low Power Consumption
•
IC Compatible
•
Snap In Mounting Clip Available
•
Red Diffused Lens
Maximum Ratings
Power dissipation @ 25°C .. . . . . . . . . . . . . . . . .. 160mW
Derate voltage linearly from 25°C . . . . . . . . . . . . . . -{).lvfc
Forward voltage@25°C . . . . . . . . . . . . . . . , . . . . . . . IIV
Storage and operating temperature . . . . . . . . . . -55 to +100°C
Peak inverse voltage . . . . . . . . . . . . . . . . . . • . . . . . . 3.0V
Optoelectronic Characteristics (at 25° C)
Parameter
Luminous intensity
DESCRIPTION
The RLC 210 is a Gallium Arsenide
Phosphide solid state lamp containing
a current regulating integrated circuit
that provides a constant intensity over
a wide voltage range.
Forward current
Emission peak wavelength
Spectral line half width
Reverse lea kage
Min
Typ
0.1
7
0.6
10
650
40
0.1
Max
14
10
Unit
mcd
mA
nm
nm
IJ.A
Test
Condition
VF =6V
VF = llV
VR = 3.0V
Specifications subject to change without notice.
191
TYPICAL OPTOELECTRONIC CHARACTERISTIC CURVES
FIGURE 2. LUMINOUS
INTENSITY VS.
FORWARD VOLTAGE
FIGURE 1. FORWARD
CURRENTVS.
FORWARD VOLTAGE
1.0
r1-r...,...,.,-,.--r-r-r-,
18
0.9
H--+-+--+-+-+--H--+--1
16
0.8
0.7
20
"
12
0.6
10
0.5
8
0.4
0.3
I
0.2
1
2
H-++++t-H-+--1
H--+-+--+-+-+--H--+--1
H-J.-+-+-+-Peak
645%15560%15
nm
>.,tom
."
561
638
50
2.4(,,;3.0)
0.01 (,,;10)
",0.63
VF
IA
Iv
nm
degrees
v
p.A
If
100
100
50
50
mcd
ns
ns
Co
12
45
pF
t,
Luminous Intensity
"Matching
Test
Min
Max
Unit
Factor Condition
Part Number
mcd
1.0
2.0
<2
20 rnA
LD·l00·3s
1.0
2.0
20 rnA
LD·l00·3t
mcd
<4
mcd
1.6
3.2
20 rnA
<2
LD·l00·4s
mcd
LD·l00-4t
1.6
3.2
20 rnA
<4
2.5
mcd
20 rnA
<2
LD·l00·5s
20 rnA
mcd
LD·l00·5t
<4
2.5
'The ratings Indicated for the forward current IF or the surge current iFS,
respectively, are maximum ratings of the component. If both chips are
operated simultaneously, the sum of the forward current ratings is not
allowed to exceed the indicated maximum value.
" ~ is the ratio of intensity of both chips to each other and deter·
Iv min mines the luminous intensity factor (s or t).
Specifications subject to change without notice.
193
MAX. PERMISSIBLE
FORWARD CURRENT
.. IF = I(Tamb)
,.
1,10
PERM. PULSE HANDLING
CAPABILITY IF = I(t)
Duty Cycle 0 = Parameter;
LUMINOUS INTENSITY
Iv = I(IF)
~~ Tamb = 21510cIIII
"
11.
"
I"'
::"'>,
',",
"" '"'
OJ
r\ R,...". = 376 K/W
40
01
\
"
"
4D
1\
10
lD
1\
10
-'_.eo
40
60
%
..-'.
100"(
RELATIVE SPECTRAL
EMISSION lrel = 1(>.)
TSN-red
1110
I"'"
.
.
..
%
30
II, \
,.
•
'60
620
,.
lD
640
660
-,
610
'IOD
... •
.,..
.'
75
-'-
lOO-C
VfU
lID. HH--+-+-+++-I
f-H-+--+-+++--
8D
"H-+++HH-
..
'/0
1,8
'l).
lp 3,0
3,4
3,8
4D
f-H--+-+-+++--
lD
f-H-+--+-+++--
4,2 V
Z5
\4\61,81,02)2,41,OUl.Ol2"'¥¥V
-v,
CAPACITANCE C = I(VR)
,F
"
75
..
-'
1000(
G.P-g....n
5O'rTTTTlmrTTTTITITr"TTTITT1I1
t-
•
" H-ttttllf-l-tHlItIII--+lI1+H!II
2D H-ttttllf-l-tHlItIII--t+1+H!II
20
•,.-,
50
CAPACITANCE C = I(-Peak = I(Tamb)
GaP-green
"
"'
"
50
25
-~
RELATIVE SPECTRAL
EMISSION lrel = 1(>-)
' f::
I... "
w·,
=1(Tamb)
'v 25
%
1
1..
LUMINOUS INTENSITY
~
litronix
LD·110
A Siemens Company
TWO·COLOR RED AND GREEN
RECTANGULAR LED LAMP
PRELIMINARY
Package Dimensions In Inches (mm)
cr==-t~---1--. ~~)
10.5)
.10
.020
12.54)
i2:3)
.091
Maximum Ratings
Reverse Voltage IVR) . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . .. 5 V
Forward Current· (IF) . .. . . . . .•. . .•••. . .•. . .•.
60 rnA
SurgeCurrent(I FS>,t:s10ps*
........ , ............•....... 1A
Storage Temperature (Tstg) .......... ,. . . .. . . . .. . .. - 55 to + 100·C
Junction Temperature (Tj) . . . . . . . . .
.. 100°0
Power Dissipation (P tot ), T amb = 25"C ........ , ............ , 200 mW
Thermal ReSistance Junction·Air (RthJA) . . . . . . . . . . . . . . . . . . .. 375 KIW
*The ratings indicated for the forward current IF or the surge current iFS'
respectively, are maximum ratings of the component. If both chips are
operated simultaneously, the sum of the forward current ratings is not
allowed to exceed the indicated maximum value.
Characteristics (Tamb = 25 ·C)
Parameter
FEATURES
• Rectangular Shape
• Colorless Lens
• Two-Color Operation, Reel and Green
• Three Leads, One of Which Is
Common Cathode
• Minimum Lead Length 1"
• .os" Lead Spacing
DESCRIPTION
The LD 110 has a colorless case with
rectangular, luminous area and
diffuser layer. Two chips (GaP·green
and TSN-reel) enable the use as optical
Indicator with two functions.
Because of Its very low current
consumption and hence low Inherent
heating as well as high vibration
resistance and long service life, this
LED Is suitable for applications where
signal lamps are not or only
inadequately useful. Moreover, the
LED can be driven by TTL ICs.
Symbol TSN·RId GaP-g"",n Unit
Wavelength of the Emitted
Light
Dominant Wavelength
Aperture Cone (Half Angle)
(Limits for 50% of Luminous
Intensity Iv)
Lateral Emission of
Ught Screened
Forward Voltage (IF 20 mAl
Reverse Current (VA = S V)
Luminous Intensity (IF = 20 mAl
Rise Time
Fall Time
Capacitance IVR = 0 V,
1=1 MHz
=
}..peak
645±15 560:::t1S
nm
I.oom
638
561
~
50
nm
degrees
VF
IA
Iv
2.4 (,;;3.0)
0.01 (,;;10)
"A
~0.63
tOO
100
12
t,
tf
Co
50
50
45
V
mcd
ns
ns
pF
Luminous Intensity
Type
Min
Max
Unit
Matching
Factor**
Condition
LO
LO
LO
LO
LO
LO
.63
1.25
1.25
2.0
2.0
mcd
mcd
mcd
mcd
mcd
mcd
<2
<4
<2
<4
<2
<4
20mA
20mA
20 mA
20 mA
20mA
20 mA
110·2s
110-2t
ltCJ.33
110-3t
110-4s
110-4t
.63
t.O
1.0
1.6
1.6
Test
-The ratings Indicated for the forward current IF or the surge current i FS'
respectively. are maximum ratings of the component. If both chips are
operated simultaneously. the sum of the forward current ratings is not
allowed to exceed the indicated maximum value.
• - ~ is the ratio of intensity of both chips to each other and deter·
Iv min mines the luminous intensity factor (s or t).
Specifications subject to change without notice.
195
I
Ma.. pennlNibia tol'W8rd currant
...
Perm. pul .. handlin, capability
1,-fIT!
Duty cycle D ,. plI,.meter; To ... = 25"C
1,-flT..!
Luminous Int'n,lty I,'" f lid
Luminous Intanslty
m'
k""
IT....I
'/,
10'
110
I,
T" r-P-" ±r- -
eo
50
1\ R"""g 375K/W
1\
-f--
"
30
\
20
2D
[\
20
40
60
80
--'-
. ' LLilllliLLWillLL~LU~
100"(
..
%
'/,
GaP-g,een
1,.1 90
..
1\
lO
f-I-
,
,
"
1\
3D
!"5"
0
540
620
2D
610
600
620
640 660
--,
610 '100
600
720 nm
5305405S05605105805906006105lO630nm
fol'W8rd CIIJQnt I • ... f IV.1
,
foIw.rd currant f. - f IV.!
TSN red
mA
10'l1li
'\
15
Forward volt..,
Gap.green
50
75
-'i " ..
'\00.(
Vns
1eo
100
"'IE "rI!!m
60
4D
,
I
2D
"., UILLL-LJLL-LJ-,-.LJ
'1,4 \6 1.8 2,G2,22,1.2,6Z,1 3,03,2 ~4U. V
--V,
.'
."L-':CII~"'C---=,L,.-:",'::--:':1,4-:,.~"
I
V
15
~v,
C.pecitanc, C - f IV.)
TSN-red
pf
50
c
100
~C
_ T....
GaP-green
Jlllllli
.]1
c
I"
1"
,
0
75
I
C.p,citBllC' C- f{V.1
pf
50
"
,
"
0
20
,
,
,,'
--v.
0
10'
10'
~v.
196
0
IS
I ... _f{q)
110
/
'"52'
5.
"
" --'-
Radiation ch'rlKltaristic
fiT,,,,.)
'/,
·'~m
...... r-r-
5"
1-1-
64
4D
GaP-g,een
Apl.~ 580
,
."
"50
50
om
~0
'",
1/ \
l:
! ,."
!Oooe
Wav,IBft,th 01 p ..k aml..lon
A_.-f(T....1
TSN-red
110
I... 90
III.
" --,_.
Wa"",ngth of puk ",,1..lon
A.... ... 'IT.....!
"
"
",
"
4D
i
l
10
I--
10' V
75
loo·e
litronix
LD·111
A Siemens Company
TWO COLOR RED AND GREEN
SQUARE LED LAMP
PRELIMINARY
Package Dimensions In Inches (mm)
I
Maximum Ratings
.. .... 5V
Reverse Voltage (VA) ..
60mA
Forward Current· (IF)
.. .. 1 A
Surge Current (i FS )' t s 10"s· ..
-55to +100"C
Storage Temperature (T,tg) ... .
.......... 100"C
Junction Temperature (Ti) ...... .
200mW
Power Dissipation (Ptot), Tamb =25"C
375 KIW
Thermal Resistance Junction·Air (RthJ .) ...
• The ratings indicated for the forward current IF or the surge
current iFS respectively, are maximum ratings of the component. If both chips are operated simultaneously, the sum
of the forward current ratings is not allowed to exceed the
FEATURES
•
Square Shape
•
Colorless Lens
• Two Color Operation,
Red and Green
•. Three Leads, One of Which
Is Common Cathode
•
Minimum Lead Length 1 "
•
.05" Lead Spacing
DESCRIPTION
The LD·111 has a colorless case with
square, luminous area and diffuser
layer. Two chips (GaP-green and TSNred) allow use as optical indicator with
two functions.
Because of its very low current
consumption and hence low inherent
heating as weil as high vibration
resistance and long service life, this
LED is suitable for applications where
signal lamps are not or only
inadequately useful. Moreover, the
LED can be driven by TIL ICs.
indicated maximum value.
Characteristics (Tamb = 25 ·C)
Symbol
TSN·red GaP-green Unll
Wavelength of the Emitted
Light
Apeak
645± 15 560± 15
Dominant Wavelength
Aoom
638
Parameter
Aperture Cone (Half Angle)
(Limits for 50% of Luminous
Intensity Iv)
Lateral Emission of
Light Screened
Forward Voltage (IF = 20 rnA)
VF
Reverse Current (VA = 5 Vl
IA
Luminous Intensity (IF = 20 mAl Iv
Rise Time
t,
Fall Time
It
Capacitance (VA = 0 V,
Co
1=1 MHz
nm
561
nm
50
degrees
2.4 (s3.0)
0.D1(sI0)
"A
V
mcd
ns
ns
~O.63
100
100
12
50
50
45
pF
Luminous Intensity
Malchlng
Test
Type
Min
Max
Unit
Factor""
Condition
LD-111-2s
.63
.63
1.0
1.0
1.6
1.6
1.25
1.25
2.0
2.0
mcd
mcd
mcd
mcd
mcd
mcd
<2
<4
<2
<4
<2
<4
20 mA
LD·III-21
LD·l11·3s
LD·lll·3t
LD·III-4s
LD·lll·4t
20 mA
20 mA
20 mA
20mA
20 mA
·The ratings indicated for the forward current IF or the surge current iFS'
respectively, are maximum ratings of the component. If both chips are
operated simultaneously, the sum of the forward current ratings is not
allowed to exceed the indicated maximum value.
"* ~
is the ratio of intensity of both Chips to each other and deterIv min mines the luminous intensity factor (5 or t).
Specifications subject to change without notice.
197
M.x. ~miMibl. forw.rd curr.nt
I.... "T_.I
Perm_ puis. h.ndlin,
c.~bility
Lumina... intensity i," 1 lid
1''''''1
Duty cvele D "' ~rameter; T,m. "' 250C
...
m,'
'10
110
~,
"-r'-~rT-''-,,
M
I,
,,'
1'00
,,'
80
•.,
"
40
30
'"
1O~
40
..,
"
"
"
-I,
~_r.,",
"-Ilttive spRlr.'emIMion I,.. .. "AI
WIIv.l.ngth of pHk .mlHion
Wanlangth of peek .miaion
~_"flT,m.1
"4
I.,
I.,
TSN-red
'10
GaP-green
."
"
"
1\
I"
tro,
60
50
\0
"
40
U
20
o
600
620
6/00
660
68(1
1
.50
-1-
-
-~
+f~
10
Forward current I, .. 1 IV,)
",
!
b'rt- rt
R,
i
510
510
o
15
50
75
1OO
500
0 (
E
15
1...... /(11
'"
-
v,u
1
100
/1
,,'
j--t-j-r-r- .
80
r-r-
-
r--
.'
f-j--j--
.. b'-'c
~R
It i1 it
11-1-'-
~R - -rII-
1.4 \61,8 2Jl2,2 2,421>2,8 3,0 3,21103.618 V
;-
50
f-
I
o
1,9
Z,Z
" r-j--j--
-i~
2,63.03,4
3,9
4,2 V
15
~-V,
T-i j--t-
it
\0
t-r-
15
100"(
- 1 "....
Cepacltence C .. f I V.l
pf
50
TSN-red
pf
50
!'
!'
0
0
0
GaP-green
,
0
0
"
50
_T_
Radiation characteristic
'10
GaP 9'""
r--r--
# ttt:E' fnr
FE
530
620
FOfWtlrd current I, .. 1 I Vol
10'
,,'
54'
.30
600
m•
•A
10'
1.11'
1-1-"
.40
5)0 5I,(l550560 510S8(!5!106006lO 620 630 nrn
720 ncn
l-
I-
150
.10
iJ
;,)()
560
f.-e-
~
·n-,
10
A,'Ok 580
510
50
i
f-r-
111 \
10
GaP-gTH"
~O
90
1:
30
"-'-/(7_1
om
0
,
10
0
0
10'
10'V
-V.
10'
~_v"
198
10' V
15
litronix
LD·112
A Siemens Company
TWO·COLOR RED AND GREEN
TRIANGULAR LED LAMP
Package Dimensions in Inches (mm)
I
CATHOOE
ANOOE REO
UPPER AND SIDE EDGES
ARE NOT SHARP
.026
(0.65(
(lf5f
020
:::=:=£~===O=3-E"""':::=f~tl:::::l=-=i.±~T
I
SURFACE NOT FLAT
Maximum Ratings
Reverse Voltage (VA) . . . . .
. ................. 5 V
Forward Current' (IF) . . .
. .......... 60 mA
Surge Current (iFS), t,;10 I'S' . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Storage Temperature (T5t9 ) . . . . . . . . . . . . . . .. -55 to + 100°C
Junction Temperature (Tj) ......................... 100°C
Power Dissipation (Ptot), Tamb=25°C .............. 200 mW
Thermal Resistance Junction·Ajr (RthJA ) . . . . • • . . . • • 375 K/W
Characteristics (Tamb = 25°C)
Parameter
FEATURES
•
Triangular Shape
•
Colorless Lens
•
Two-Color Operation, Red and Green
•
Three Leads, One of Which Is
Common Cathode
•
Minimum Lead Length 1 "
•
.05" Lead Spacing
DESCRIPTION
The LD·112 has a colorless case with
triangular, luminous area and diffuser
layer. Two chips (GaP·green and TSN·
red) allow use as optical indicator with
two functions.
Because of its very low current
consumption and hence low inherent
heating as well as high vibration
resistance and long service life, this
LED is suitable for applications where
signal lamps are not or only
inadequately useful. Moreover, the
LED can be driven by TTL ICs.
Wavelength of the Emitted
Light
Dominant Wavelength
Aperture Cone (Half Angle)
(Limits for 50% of Luminous
Intensity Iv)
Lateral Emission of
Light Screened
Forward Voltage (IF = 20 mAl
Reverse Current (VA = 5 V)
Luminous Intensity (IF = 20 mAl
Rise Time
Fall Time
Capacitance (VR = a v,
f= 1 MHz)
Symbol
TSN·red
Apeak
645 ± 15 560 ± 15
GaP·green Unit
nm
\Jom
638
1,
mA
100
150
1
r,
I ~A
70
7
150
mW
-40 to +150
-40 to +100
100
I~
"c
260
4400
v
(between emitter and detector referred to
standard climate 23/50 OIN 50014;
~~~~~~~, ~6~ g~~3:~~e~3, 6.80
~:~ ~:~:
I' ~:
Tracking resistance: Group III IKC ~ 600 in accordance with VDE 110 , 6, table 3 and
OIN 53480NDE 0330, part 1.
10"
Isolation voltage @ VI, '" 500 V
Characteristics (Tamb = 25 0 C)
Emitter (GaAs infrared emitting diode'
Forward voltage (If = 60 rnA)
Breakdown voltage (JR :: 100 IJA)
Reverse current (VR :: 3 V)
Capacitance (VR :: 0 V; f = 1 MHz)
Thermal Resistance
v,
v"
I.
CO
RthJamb
1.251<1.651
130
I;' 61
0.01
40
750
« 101
V
IV.A
pF
K/W
Detector lSi phototranlistorl
Capacitance (VeE:: 0 V; f = 1 MHz)
CeE
Ce•
C"
Thermal Resistance
RthJamb
Coupler
Collector-emitter saturation voitage
UF = 10 mA; Ie :: 2.5 mAl
Coupling capacitance
VeE"1
CK
6.8
8.5
11
500
I
I
IS
K/W
.25 1< .4)
.30
The couplers are grouped in accordance with their current ratio
VeE = 5 V and marlted by Roman numerals.
~~
I
V
pF
at Ie :: 10 rnA and
Specifications subject to change.
Group
CNY 17·1
if-
40 to 80
Collector-emitter
leakage current
(VCE = 10V)
205
leEo
2
« 501
CNY 17·2
CNY 17·3
CNY 17·4
63 to 125
100 to 200
180 to 320
.,.
2 I' 501
51,1001
5 I' 1001
nA
I
Linear operation (without saturation)
Load resistance
Delay time
Rise time
Storage time
Fall time
Cut-off frequency
RL
75
n
IF
td
t,
3,0 (:;;;5,6)
2,0 (:;;;4,0)
T"mb
t,
t,
2,3 (:;;;4,1)
2,0 (:;;;3,5)
115
115
115
115
f.
250
kHz
= 10 mA
= 5V
= 25"c
VB
if:
Switching operation (with saturation)
.5V
1kr2
v. =SV
~~ or 2TTL inputs
TTL level observed
but no TTL switching times
2,7kl'l
TTL
with pull-up resistor
of 2.7 kU
Group
1
I F =20'lTlA
Delay time
t.
t,
t,
t, .
Rise time
Storage ti me
Fall time
Vee
( T..,b
=25 ·C.
VeE
2,0 (:;;;4,0)
3,0 (:;;;6.0)
,4,6 (:;;;8,0)
18 (:;;;34)
23 ($039)
25 (:;;;43)
11 (S20)
14 (:;;;24)
15 (:;;;26)
sa'
Current transfer
ratio as a function
of diode current
( T...b = -25 ·C.
=5V)
VeE
"'¥--'(I,)
If
115
115
115
115
V
Current transfer retio as e
func;tion of diode current
(Temb ... o·e; VeE =5V)
=5 V)
'It
.!Q. 10 3
500
4
1.=5 mA
6,0 (:;;;10,5)
0,25 (;:;;0.4)
Minimum current
transfer ratio as a function
of diode current
",¥--'(1,)
3,0 (:;;;5,5)
2 and 3
1.=10 mA
4,2 (:;;;8,0)
Ie
5
¥-_'(1,)
103 '
1
5
•
200
~
V
:..!:
~
V
j..L
2
2
4
1
1
100
/
5
1/
~
~
100
r-.l
10'
./
-'
VII
1'--2
,V 1I
102mA
10 10-' 2
/
I
5
yJJ 2
5 10' 2 mA
-I,
-1,
206
,V
lOur' 2
5 yJJ 2
5
Il' 2mA
-I,
Current transfer
ratio as a function
of diode current
(T_II
_
(T_ b =50·C;
-26 ·C. vCf=6 V)
VeE =6V)
~1.=f(/,)
~~=f(/.)
103 •
103
,..i.
~
J.
/
10'
V ..
,
2
10
10-'2
2
10
510' 2mA
/
10-'2
Current transfer ratio as
a function of temperature
VeE
5100 2
--I,
VeE)
mA
30
IIII
IIII
5
IIII
t~
}B"I·Ji
•
lim
III
20
~
I~: 30IlA
2
IF"I~
IIII
IrI"~
1
10
IF" 6mA
,0
U IL
18" 10llA
I
Ia"
10'
-25
25
I
50
-T
10
IlA
1,2
~
jj]
sooe
750(
I
V
1,0
1/
0,9 , 0"'
10'
2m~
10
15 V
15V
-VCE
(T.mb =25 ·C; 1~ =0)
V,,_f(l,,)
1,1
IF"
Collector-emitter
off-state current
v
t
IF"lmA
-VCE
Forward voltage
u.
IF" 4mA
5"~
I,.. 21lA
75°C
I
(!!m.. =2S-C)
Ic=f(
mA
30
'3
510' 2mA
Output characteristics
(Current gain B=55Q1
Ie 103 •
51002
-IF
(T_.=2S"C; 1,=0)
le='( vcd
\'t~=f(T)
10,I
10'
10-'2
510' 2mA
Transistor charactaristics
",,5V)
/
J
,Iv
--IF
(I,-10mA.
2
10'
1/
/
5100 2
~
~
1
IV
10'
.!.
~
1
l
Current transfer
ratio as a function
of diode current
Current transfer ratio as a
function of diode current
-
--I,
10'
ICtO
Variation of current transfer
ratio as a function of load time
lCEo=f(T)
'OO.!!III
Vce"·OV
°/.
~=f(l)
I'
-- _.
110
lla
!ur'BIJlce"I'OV
'0"'''.
1~25·':ll.L.l.!:l..IJ.l:2':f5.J...U-!:50l..IJ.l:75~~lOOOC
-T
207
..-
I
-
~
90
I
~U
80 'KI'
-
'0'
..
'0'
i
-
MediCIn
III
,
~~I
-1]
10'
···----..t
'KI' h
Satu ration voltage as a
function of collector current
and modulation depth for CNY17·1
Handling seme except for CNY17·2
( Tamb =25 'C)
V
Vellat
I
0.9
Vee",
0.8
r
0.7
D.6
IF" i'/e
O.5
!
/1
0.3
\0
1.0
0.9
Vee",O.9
I
0.8
0.7
0.6
o.s
I"--
D.2
5
10'
--Ie
O.1
10 l mA
\0
VeeOl'..D.9
\nfi
11
5
10'mA
--Ie
Permissible loss
transistor and diode
CNY17-4
IF" 2x/e
IIIII
10'
--Ie
(T_. =25'C)
V VCt .. , =f(/d
I
5
V-
02
II II
II II
0100
10lmA
0.3
IF" 3de
L
O. 1
10'
(),oI
/ II II
I
O.1
V
0.5
0.3
0.2
1
/
IF"2xlc
0.4
I
IFI.~~
0.8
0.7
0.5
/1
0.4
(Tamb =25 ·C)
V VCha, ;f(1cl
VVcE .. t=f(ld
1.0
Vc".,
CNY17·3
(1.... 0 =26 'C)
=!(Ie)
Permissible loss diode
mW P=f(T....b)
mA /,=f(T''''b)
200
120
p
o.8
1
1'50
O.7
0.6
Nra.nsistor
IF "Ie
0.5
.00
/
II
0.4
O.3
1\
Diod,
50
IF" 2x/e
IF ~ 3x/e
O.2
I'-
.1
1\
[\,
1\
I"
III1
0
10'
5
10 l mA
25
50
--Ie
l- I-
60
l - t--
~ i\
75
100
K'
f'
30
I"
~
·c
25
Permissible pulse load
Diode capacitance
(0 = Parameter; T.,. =25 'e)
(T... =25'C; 1=. MHz)
C=/(V,)
mA IF =f(r)
pF
50
1C'a:m~m:ll!7J
C
t
11a
.00
·c
Transistor capacitances
(T....to =25 'C; 1=1 MHz)
C=/( V,l
pf
24
C 22
I,
75
50
-ramb
-T.."b
I
t--
I
30
J
20
!'I:
18
16
,-
,4
11"\
1
12
10
20
8
j---
f:
I'
~
Ceo
Ceo
Jj
"-
~
10
2
10"4
10')
10"2
10"
--'!'
1rf
10' s
n'
_v,
208
'(J' V
10'
-v.
,O'v
litronix
A Siemens Company
IL·1 SINGLE CHANNEL
ILD·1 DUAL CHANNEL
ILQ·1 QUAD CHANNEL
PHOTOTRANSISTOR
OPTO·ISOLATOR
Package Dimensions in Inches (mm)
'-u
""
IL·'
I;;::'~::;;j
.0-
240
•
1§.2QJ
(!iOO)
'60
-L.'
ILD·'
.
l----..
38"
(9 65)
----1
~O·
.J (.':~"':
~40
(6,10)
16.601
260
L-
...0(.
II
,
FEATURES
•
•
•
•
•
7400 Series T2L Compatible
2500 Volt Breakdown Voltage
0.5 pF Coupling Capacitance
Industry Standard Dual-In·line Package
Single Channel, Dual, and Quad
Configurations
• Underwriters Lab Approval #E52744
ILQ-'
DESCRIPTION
IL-' is an optically coupled pair employing a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal
information, including a DC level, can be
transmitted by the device while maintain·
ing a high degree of electrical isolation
between input and output. The IL-'
is especially designed for driving mediumspeed logic, where it may be used to
eliminate troublesome ground loop and
noise problems. It can also be used to
replace relays and transformers in many
digital interface applications, as well as
analog applications such as CRT modulation. The ILD-' offers two isolated
channels in a single DIP package while
the I LQ·' provides four isolated channels
per package.
Specifications subject to change without notice.
209
I
MAXIMUM RATINGS
Gallium Arsenide LED (each channel)
Power Dissipation @ 25°C
IL·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
ILD·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
ILO·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Derate linearly from 25°C
IL·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6 mWfC
ILD·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1.33 mWfC
ILO·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 mWfC
Continuous Forward Current
IL·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
ILD·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
ILO·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Detector Silicon Phototransistor (each channel)
Power Dissipation @ 25°C
IL·' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
ILD·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
ILO·' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '50 mW
Derate linearly from 25°C
IL·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6 mWfC
ILD·' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..; . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 mWfC
ILO·' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 mWfC
Collector· Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 30 V
Emitter·Coliector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Coliector·Base Breakdown Voltage (lL·'). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 70 V
Package
Total Package Dissipation at 25°C Ambient (LED Plus Detector)
IL·1 ....... , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
ILD·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
ILO·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Derate linearly from 25°C
IL·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3 mWfC
ILD·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33 mWfC
ILO·1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67 mWfC
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +150°C
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +100°C
Lead Soldering Time @ 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 10 sec
210
ELECTRICAL CHARACTERISTICS PER CHANNEL (at 25°C Ambient)
Min
Parameter
Gallium Arsenide LED
Forward Voltage
Reverse Current
Capacitance
Phototransistor Detector
BV CEO
I CEO
Collector· Em itter Capacitance
30
BV ECO
Coupled Characteristics
DC Current Transfer Ratio
VSAT
Capacitance, Input to Output
Breakdown Voltage
Resistance, Input to Output
Test Conditions
Typ
Max
Units
1.3
0.1
100
1.5
10
V
jJ.A
pF
IF = 60 mA
V R =3.0V
V R =0
V
nA
pF
V
Ic =
V CE
V CE
IE =
V
IF = 10 rnA, V CE = 10 V
Ic = 1.6 rnA, IF = 16 mA
50
5.0
2.0
50
7
10
0.2
0.35
0.25
0.5
1 rnA
= 10 V, IF = 0
=9
100jJ.A
0.5
pF
V
Gn
D.C.
100
6.0
25
jJ.s
jJ.s
RL = 2.4Kn, V CE = 5 V
IF = 16 mA
2500
Propagation Delay
to ON
to OFF
TYPICAL OPTOELECTRONIC CHARACTERISTIC
CURVES FOR EACH CHANNEL
FIGURE 1. RELATIVE
OUTPUT VS
TEMPERATURE
FIGURE 2. DARK
CURRENT VS
TEMPERATURE
1.2
FIGURE 3. TRANSFER
CHARACTERISTICS
10-5
~
/
0.8
0.6
/
10-6
~
10-8
~
10-9
~
o
-50
-25
0
25
50
75
10- 11
/
CASE TEMPERATURE
/
./
-25
0
25
50
75
10
'F=20mA
1
~
4
e
~
8
16
I
I. e- VCE -lOV
12
10
1, -1~mA
I
2
5
10
15
IS ~
:
RL =1 1 Krl
t-- I--
IFI"smA
I I
0
o
10
20
25
o
30
COLLECTOR VOLTAGE - VeE (V)
"
RL
~
loon
I
o
8
10
12
COLLECTOR CURRENT - Ie (rnA)
211
20
30
40
sa
LED INPUT CURRENT (mAl
FIGURE 5. SWITCHING
TIME VS COLLECTOR
CURRENT
IF = 15 mA
~
6
100
CASE TEMPERATURE 1°C)
!
~
/
10
FIGURE 4. DETECTOR
OUTPUT
CHARACTERISTICS
;;:
/
15
/
./
10-12
-50
tOO
/
20
;./
~ 10- 10
0.4
/
/
~ 10- 7
/
30
/
0:
1.0
60
I
PIN CONFIGURATIONS
IL-l
(TOP VIEW)
PIN NO_
1
2
3
4
5
6
5
4
FUNCTION
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
LED CHIP ON PIN 2
PT CHIP ON PIN 5
"
ILD-l
(TOP VIEW)
PIN NO_
1
2
3
4
5
6
7
3
4
8
FUNCTION
ANODE
CATHODE
CATHODE
ANODE
EMITTER
COLLECTOR
COLLECTOR
EMITTER
LED CHIPS ON PINS 2 AND 3
PT CHIPS ON PINS 6 AND 7
ILQ-l
(TOP VIEW)
PIN NO_
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LED CHIPS ON PINS 2, 3, 6, 7
PT CHIPS ON PINS 10, 11, 14, 15
212
FUNCTION
ANODE
CATHODE
CATHODE
ANODE
ANODE
CATHODE
CATHODE
ANODE
EMITTER
COLLECTOR
COLLECTOR
EMITTER
EMITTER
COLLECTOR
COLLECTOR
EMITTER
litronix
IL·5
A Siemens Company
PHOTOTRANSISTOR
OPTO·ISOLATOR
Package Dimensions in Inches (mml
PINNO.
1
ANODE
CATHODE
2
3
NC
4
S
6
EMITTER
COLLECTOR
BASE
Maximum Ratings
Gallium Arsenide LED
0
Power Dissipation @ 25 C ...
Derate Linearly from 25°C ..
. . . . . 200 mW
2.6 mWf'C
Continuous Forward Current . . .
100 rnA
. . . . . . . . . . . . . . . . . 3.0 V
Peak Inverse Volt8ge. .
Detector (Silicon Phototransistorl
. . . . . . . . . . .. . 200 mW
Power Dissipation @ 2SoC
Derate Linearly From 2SoC . . . . . . . . . . . . . 2.6 mWfC
Collector-Emitter Breakdown Voltage (BVeEo) . . . . . . 30 V
Emitter-Collector Breakdown Voltage (BV ECO )' . . . . . . 7 V
Collector-Bsse Breakdown Voltage (BV ceo) . . . . . . . . 70 V
Package
FEATURES
•
Total Package Dissipation at 25" C Ambient
(LED Plus Detector) . . . . . , ...
. .. 250 mW
Derate Linearly From 25"C
.. 3.3mWI"C
Storage Temperature.
-55 to +150o C
Operating Temperature . . . . . . . . . . . . , .. -55 to +100 o C
Lead Soldering Time @ 260°C. . . . . . . . . . ,
10 sec
2500 Volt Breakdown Voltage
• 70% Typical Transfer Ratio
•
Industry Standard Dual-In-Line
•
0.5 pF Coupling Capacitance
•
Electrical Characteristics (at 2SoC Ambient)
Underwriters Lab Approval #E52744
DESCRIPTION
Parameter
Gallium Arsenide LED
Forward Voltage
Reverse Current . . . . .
Capacitance
Phototranlistor Detector
HFE· . . . . . . .
Min
BVCEO' ..
BVECO' .. , . , . . . .
ICEO (dark) . . . • .
30
7
Collector-Emitter
Capacitance. . . . .
Coupled Characteristics
DC Current Transfer
I L-5 is an optically coupled pair
employing a Gallium Arsenide infrared
LED and a silicon NPN phototransistor.
Signal information, inlcuding a DC
level, can be transmitted by the device
while maintaining a high degree of
electrical isolation between input and
output. The I L·5 can be used to
replace relays and transformers in many
digital interface applications, as well as
analog applications such as CRT
modulation.
TVp
1.3
.1
100
T ...
Ma. Unit
1.5
10
V
.A
pF
450
50
10
50
5
pF
2
0.5
0.70
Collector-Emitter Saturation
Voltage VCE(sat}
0.26
Capacitance, Input
to Output . . . .
Breakdown Voltage.
2.500
Resistance, Input
to Output . . • . . . .
Output Rise and Fall
Times. . . . . • . • . •
V
V
nA
IF'" 60mA
VA=3.0V
VR =0
VCE = 5.0 V
Ic = 100IlA
Ic'" 1 mA
'E = l00!,A
VCE'" 10 V
IF = 0
VCE "'0
IF=10mA.
VCE=10V
IF"" 16 rnA
Ic"" 1.6 rnA
0.5V
.5
pF
100
Gil
V
2
Condition
.'
C.C.
IF ""tOmA
VCE",tOV
Specifications subject to change without notice.
213
I
TYPICAL OPTO- ELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. RELATIVE
OUTPUT VS
TEMPERATURE
FIGURE 2. DARK
CURRENTVS
TEMPERATURE
1.2
10-5
f-
~
1.0
:>
/
u
f-
~:>
0
w
0.8
V
10-6
~
10- 7
10-9
>
>= 0.4
~
10- 10
~
o
10-11
o
10- 12
-50
25
-25
50
75
~
:>
u
.L
:>
~
~
15
f-
~
0
I
I
V
10
100
IF!=-S rnA
/
0
U
75
iF = 16mA
/
10
50
IF" 15 rnA
/
f-
:>
0
25
IF=20mA
/
20
-25
FIGURE 4. DETECTOR
OUTPUT
CHARACTERISTICS
30
25
/
./
CASE TEMPERATURE (OC)
FIGURE 3. TRANSFER
CHARACTERISTICS
f-
/
-50
100
CASE TEMPERATURE
.§
/
*
g
;;
/
/
Y
~: 10-8
/
0.6
~
20
30
40
50
10
60
LED INPUT CURRENT (rnA)
15
20
25
30
COLLECTOR VOLTAGE - VeE (V)
FIGURE 5. SWITCHING
TIME VS COLLECTOR
CURRENT
16
V~E= l~V
14 -
~
12
~
10
.3
~ b-
RL
JlKn -
-
>=
~
i
u
f-
~
o
"
RL = lOon
I
o
10
12
COLLECTOR CURRENT - Ie (rnA)
214
litronix
IL·12
A Siemens Company
PHOTOTRANSISTOR
OPTO·ISOLATOR
Package Dimensions In Inches (mm)
3<0
O
i;;:HiiAj
PIN NO.
3;0
,-
L~. 1. Q)
240
16601
ANODE
1
2
3
J.
0•
5
CATHODE
NC
EMITTER
COLLECTOR
6
BASE
4
~
Maximum Ratings
Gallium Arsenide LEO
Power Dissipation @ 25 C
Derate Linearly from 25°C
200 mW
2.6 mWtC
100 mA
3.0V
Q
Continuous Forward Current
Peak Inverse Voltage
Detector (Silicon Phototransistor)
Power DiSSipation at 25u C .
Derate Linearly from 25°C
Collector-Emitter Breakdown Voltage (BVeEO)
200mW
2.6 mWfC
30V
7V
70V
Emitter-Collector Breakdown Voltage (BVEeO)
Collector-Base Breakdown Voltage (BVeBO)
Package
Total Package Dissipation at 25°C Ambient
(LED Plus Detectod
FEATURES
•
1000 Volt Breakdown Voltage
•
10% Minimum Current Transfer Ratio
•
2 pF max. Coupling Capacitance
• Standard Dual-In-Line Package
•
Replacement For TIL·112
• Underwriters Lab Approval #E52744
DESCRIPTION
I L-12 is an optically coupled pair
employing a Gallium Arsenide infrared
LED and a silicon NPN phototransistor.
Signal information, including a DC
level, can be transmitted by the device
while maintaining a high degree of
electrical isolation between input and
output. The I L-12 can be used to
replace relays and transformers in many
digital interface applications, as well
as analog applications such as CRT
modulation.
250mW
3.3 mWf'C
_55°C to +150°C
_55°C to +100°C
10 sec
Derate linearly From 25°C
Storage Temperature
Operating Temperature
Lead Soldering Time @ 260°C.
Electrical Characteristics (at 25°C Ambient)
Parameter
Gallium Arsenide LED
Forward Voltage
Reverse Current.
Capacitance
Phototransistor Detector
Typ
Min
M..
1.5
Unit
V
100~A
HFE
50
BVCEO
BVECO
ICEO (darki
Collector-Emitter
Capacitance
Output Rise and Fall
Times.
20
Test
Condition
IF" 10 mA
VR" 3.0V
VR" 0
100
pF
60
10
5
V
V
nA
VCE" 5V
pF
VCE" 0
~s
IF"10mA
VCE" 10V
VCE" 5.0V
IC"100~A
Coupled Characteristics
DC Current Transfer
Ratio
4
.10
VCE (SATi
Capacitance, Input to
Output
Breakdown Voltage.
Resistance Input to
Output
250
0.5
V,
pF
V
1000
100
Gn
Specifications subject to change without notice.
215
IE"100~A
IF" 10mA
V CE " 5V
RL" lOOn
.20
0.3
IC"l mA
Ie'" 2mA
IF"50mA
D.C.
I
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. RELATIVE
OUTPUT VS
TEMPERATURE
..15
..""
~
"
1.2
10-5
1.0
,/'
/
0.8
I!:
"0
w
>
;::
~
FIGURE 2. DARK CURRENT
VS TEMPERATURE
0.6
~
10-6
~
10-7
;:. 10-8
J
V
-50
/
15~
10- 9
a
TO- 10
~
10- 11
~
0.4
o
/
/
/
/
./
10- 12
-25
25
50
75
-50
tOO
CASE TEMPERATURE
1
2.5
_"
..
/
100
'F'" 15 rnA
~ 1.5
iF ~ 16mA
'"
a
/
'"
~
8
/
V
40
75
50
1 5mA
IF
.5
o
60
LED INPUT CURRENT (rnA)
14
C!
w
"
o
C
I
10
15
20
25
30
COLLECTOR VOL rAGE - VeE (V)
,.
]
I
'F = 20 rnA
2
I
/
30
50
FIGURE 4. DETECTOR
OUTPUT
CHARACTER 'STICS
/
20
25
CASE TEMPERATURE (OC)
FIGURE 3. TRANSFER
CHARACTERISTICS
10
-25
12
10
;::
z
i
FIGURE 5. SWITCHING
TIME VS COLLECTOR
CURRENT
-V~E~,'OV
~ F;;:- RL~'Kn -
"
"
..~
o
"
r-
RL"" lOOn
I
a
10
12
COLLECTOR CURRENT - Ie (rnA)
216
litronix
A Siemens Company
IL·74 SINGLE CHANNEL
ILD·74 DUAL CHANNEL
ILQ·74 QUAD CHANNEL
PHOTOTRANSISTOR
OPTO·ISOLATOR
Package Dimensions in inches (mm)
IL·74
3<0
1r;::3:::A1
~~u-16.601
160
.L..'
010
(178)
I203i
~-
130
1330)
-----+(3'~'El--- ----,- 020
J:~li~:
2~k''''''''''I-in-lU
130
LI5Q81
Ii62i
030
300
I~~~I-I~
I~~gl
I3ii5i
I LO-74
FEATURES
7400 series T2 L compatible
1500 volt breakdown voltage
35% typical transfer ratio
0.5 pF coupling capacitance
Industry standard dual-in-line package
Single channel, dual, and quad
configurations
• Underwriters Lab Approval #E52744
DESCRIPTION
•
•
•
•
•
•
IL-74 is an optically coupled pair employ·
ing a Gallium Arsenide infrared LED and
a silicon NPN phototransistor. Signal in·
formation, including a DC level, can be
transmitted by the device while maintaining a high degree of electrical isolation
between input and output. The I L·74 is
especially designed for driving mediumspeed logic, where it may be used to
eliminate troublesome ground loop and
noise problems. It can also be used to
replace relays and transformers in many
digital interface applications, as well as
analog applications such as CRT modulation. The I LD·74 offers two isolated
channels in a single DIP package while the
I LQ-74 provides four isolated channels
per package.
ILQ·74
Specifications subject to change without notice.
217
Q
15"
0>2
I
MAXIMUM RATINGS
Gallium Arsenide LED (each channel)
. . . . . . . . .. .. . . . . . . . .
. .. 150 mW
Power Dissipation @ 25°C . . . . . . . . . . . . . . . . .
Derate linearly from 25°C. . . . . . . . . . . . . . .
.. ....
.. ....
. .. ....
1.33 mW/oC
Continuous Forward Current. .
. . . . . . . . . .. ......
.."
.....
. . . . . . . . . 100 mA
3.0V
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... ..
Detector-Silicon Phototransistor (each channel)
. . . . . . . . . . . . . . 150 mW
Power Dissipation @ 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate linearly from 25°C . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . . . 2.0 mWtC
Collector-Emitter Breakdown Voltage (BV CEO ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . "
... 20V
Package
Total Package Dissipation at 25°C Ambient (LED Plus Detector)
I L·74 . . . . . . . . . . ... ....... ....... . . . . . . . . . .
..
. . . . . . . . . . 200 mW
ILD-74 .... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400 mW
ILQ·74 . . . . . . . . . . . . . . . . . . . . . . . . . . .
.. .. ..
. . . . . . . . . . . . . . . . . . 500 mW
Derate linearly From 25°C
IL-74 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3 mW/oC
ILD·74 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33 mW/"C
ILQ-74 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67 mWtC
..
Storage Temperature
... .
. . . . . . . . . . . . .. . . . . . . . . . . . ..
Operating Temperature. . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Soldering Time @ 260°C ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-55°C to +150°C
-55°C to +100°C
...
10 sec
ELECTRICAL CHARACTERISTICS PER CHANNEL (at 25°C Ambient)
Parameter
Min
Gallium Arsenide LED
Forward Voltage
Reverse Current
Capacitance
Phototransistor Detector
BV CEO
ICEO
Collector-Emitter Capacitance
Coupled Characteristics
DC Current Transfer Ratio
VSAT
Capacitance, Input to Output
Breakdown Voltage
Resistance, Input to Output
Propagation Delay
tOON
tOOFF
Typ
Max
Units
1.3
0.1
100
20
0.125
50
5.0
2.0
500
0.35
0.3
0.5
0.5
V
pA
pF
IF = 100 mA
V R = 3.0V
VR = 0
V
nA
pF
Ic = 1 mA
VCE =5V,I F =0
VCE = 0
100
V
pF
VDC
Gn
6.0
25
ps
ps
1500
Specifications subject to change without notice.
218
Test Conditions
IF = 16mA, VCE =5V
Ic = 2 mA, IF = 16 mA
RL = 2.4Kn, VCE = 5V
IF = 16 mA
TYPICAL OPTOELECTRONIC CHARACTERISTIC
CURVES FOR EACH CHANNEL
FIGURE 1. RELATIVE
OUTPUT VS
TEMPERATURE
FIGURE 2. DARK
CURRENT VS
TEMPERATURE
1.2
10-5
/
0:
1.0
/
0.8
V
/
0.6
~
10-6
J!
10-7
I-
10-8
~
10-9
a
~
0.'
"
o
-50
-25
25
50
75
100
/
V
10-10
/
10-11
./
10-12
-50
30
12
/
/
~
8
30
40
100
50
I
I
iF' lAmA
::>
u
l/
20
75
IF =lSmA
"
/
10
IF=20mA
8
~
/
10
10
I
/
15
50
FIGURE 4. DETECTOR
OUTPUT
CHARACTERISTICS
FIGURE 3. TRANSFER
CHARACTERISTICS
20
25
-25
CASE TEMPERATURE (OCI
CASE TEMPERATURE
25
V
IFI"smA
o
60
I
o
lEO INPUT CURRENT (mAl
10
15
20
25
30
COLLECTOR VOLTAGE - VeE (V)
FIGURE 5. SWITCHING
TIME VS COLLECTOR
CURRENT
16
,. f-V~E
12
10
1
,, 0V
~~
RL
......
o
JlKn -
-
RL'"' 100n
I
o
10
12
COLLECTOR CURRENT - Ie (rnA)
219
PIN CONFIGURATIONS
IL·74
(TOP VIEW)
PIN NO.
1
2
3
4
5
6
FUNCTION
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
LED CHIP ON PIN 2
PT CHIP ON PIN 5
ILD-74
(TOPVIEWI
PIN NO.
1
2
3
4
5
6
7
8
L~D CHIPS ON PINS 2 AND 3
PT CHIPS ON PINS 6 AND 7
FUNCTION
ANODE
CATHODE
CATHODE
ANODE
EMITTER
COLLECTOR
COLLECTOR
EMITTER
IL-201, IL-202, IL-203
litronix
A Siemens Company
PHOTOTRANSISTOR
OPTO-ISOLATOR
Package Dimensions in Inches (mm)
'...!:
~
.
2
5
3
•
PIN NO.
1
ANODE
2
CATHODE
3 N/C
4
EMITTER
5 COLLECTOR
6
BASE
Maximum Ratingl
Gallium Arsenide LED
Power Dissipation. 2SoC . . . • . . . • . . . • • • . . . . 200 mW
Derate Linearly from:nrC . • . • . . . . . . • . • . . 2.6 mWrc
Continuous forward Current. • . . . . . • . . • • . •• 100 mA
Peak Inverse Voltage . . • • . . . . . . • • . . • • . • • . . • 6.0 V
Detector (Silicon Phototrensi.torl
Power Dissipation II 2SoC ..•••.••.•.•••.•.• 200 mW
Derate Linearly From 25°C . . . . • . . . . . • • • . . 2.6 mWrc
Coliector·Emitter Breakdown Voltage (BV CEO ' . . • . • • • 30 V
Emitter-Collactor B.... kdown Voltiga IBVeco ) •••..•• 7 V
Coliector·Base Breakdown Voltage 1BVceo' • • . . . • . • • 70 V
Packllge
Total PIICkaga OilSipation lit 25"C Ambient
(LEO Plus Detector) . • • . • . . • . • • . . . . . • • . . . 250 mW
Derate Linearly From 26"C . . . . . • . . . . • . • • • 3.3 rnWrc
Storage Tamperature • • • . . • • . . • • • . . . . • -55 to +15O"C
OparatingTamperature•.•••••••••• , .•• -55to+1cxfc
Lead Soldering Time" 26Cfc . ... , .... , ....... 10 sec
FEATURES
• 5000 Volt Breakdown Voltage
•
High Current-Transfer-Ratio (75%-450%)
•
•
Long Term Stability
Industry Standard Dual-In-Line
•
•
1 mA Current-Transfer-Ratio Guarantee
Underwriten Lab Approval #E52744
PII,ameter
Min
Gallium Arsenide LEO
Forward Voltage VF
Forward Voltage VF
Reverse Current
IR
Typ
1.2
1.0
0.01
1.5
1.2
10
Tilt
Un..
V
V
~A
CDndition
IF-20mA
IF -1 mA
VA -6V
TA-26"C
Breakdo· Voltage V R 6
Phototransistor Detector
HFE
BVCEO
BVeco
BVCBO
ICEO
DESCRIPTION
IL-201, IL-202, IL-203 are optically
coupled pairs employing a Gallium Arsenide infrared LED and a silicon NPN
phototransistor. Signal information,
including a DC level, can be transmitted by
the device while maintaining a high degree
of electrical isolation between input and
output. The IL-201, IL-202, IL-203can be
used to replace relays and transformers
in many digital interface applications, as
well as analog applications such as CRT
modulation.
-
Elactrical Characteristics {O°C - 70"C unless otherwisasp8Cified)
100
30
7
70
20
V
200
50
10
90
5
50
I" -10",A
VeE -6V.
IC -100",A
V Ic"'1 mA
V Ic -100",A
V Ic-100",A
NA VCE",10V.
TA-26"C
Coupled Characteri.tics
Base Current
Transfer Ratio
,OTRI
VCE I••• )
0.15
DC Current Transfer Ratio (CTRI
IL·201
75
100
125
200
IL·202
IL·203
225
300
DC Current Transfer Ratio (CTRI
IL·201
IL·202
IL·203
10
30
50
Input to Output
IlOlation Voltage
&000
Specifications subject to change without notice.
221
"
0.4
V
150
250
450
"
"
"
IF-10mA
VeE - 10V
IF-10mA
Ic-2mA
IF"'10m,o:
VCE-10V
"
"
IF-1 mA
Vce- 10V
V
D.C.
"
I
222
litronix
I L·501, I L·505, I L·512
A Siemens Company
PHOTOTRANSISTOR
OPTO·ISOLATOR
Package Dimensions in Inches (mm)
340
'E::~
6
240
(610)
(6.60)
.260
V
PIN NO.
1
ANODE/CATHODE
2
3
4
5
CATHODE/ANODE
NIC
EMITTER
COLLECTOR
6
BASE
~
.070
(1.78)
(2:03i
I
080
Il...d'~'""'-
.280
I
£!..1l
.048
j
052
(8.38) ~ I
.330 (132) -I
I- I
I
15'
FEATURES
•
5000 Volt Breakdown Voltage
Maximum Ratings
•
IL·501 -
35% Typical CTR
•
IL·505 -
70% Typical CTR
•
IL·512 -
20% Typical CTR
•
Standard Dual·ln·Line Package
•
Underwriters Lab Approval #E52744
Gallium Arsenide LED
Power Dissipation @ 25'C .... " .............. 200 mW
Derate Linearly from 25'C .................. , 2.6 mW/'C
Continuous Forward Current. . . . . . . . . . . . . . . . . .. 100 mA
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . .. 3.0 V
Detector (Silicon Phototransistor)
Power Dissipation @ 25'C .................... 200 mW
Derate Linearly from 25'C ............. '" ... 2.6 mW/'C
Collector-Emitter Breakdown Voltage
(BVCEO) _ . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . . . . . . . • 30 V
Emitter·Coliector Breakdown Voltage
(BVECO ) • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Collector· Base Breakdown Voltage
DESCRIPTION
The IL·501/505/512 is an optically
coupled pair employing a gallium
arsenide infrared LED and a silicon
NPN phototransistor. Signal
information, including a DC level, can
be transmitted by the device while
maintaining a high degree of electrical
isolation between input and output.
They can be used to replace relays
and transformers in many digital
interface applications, as well as
analog applications such as CRT
modulation.
(BVCBO ) • . . . . • . . . . • . . . . . . . . • . . • . • . . • . . . . . . . . .. 70 V
Package
Total Package Dissipation @ 25'C Ambient
(LED Plus Detector) . . . . . . . . . . . . . . . . . . . . . . . .. 250 mW
Derate Linearly from 25'C . . . . . . . . . . . . . . . . . .. 3.3 mW"C
Storage Temperature .................. -55 to +150'C
Operating Temperature ................ -55 to +100'C
Lead Soldering Time @ 260'C ................... 10 sec
Specifications subject to change without notice.
223
Electrical Characteristics (@ 25·C Ambient)
Parameter
Gallium Arsenide LED
Forward Voltage
IL·501/S0S
IL·S12
Reverse Current
IL·S01/S05
IL·S12
Capacitance
Phototranslstor Detector
Min Typ Max Unit
TeBt
Condition
FIGURE 1. RELATIVE
OUTPUT VS
TEMPERATURE
1.3
1.2
1.S
1.S
V
V
IF =60 mA
IF =10 mA
0.1
1.0
100
10
100
p.A
p.A
pF
VR=3.0V
VR=3.0V
VR=OV
4S0
so
V
60
V
10
10
V
0.6
f-+-+'"7'~+=:::P-.j
/"'"
/
t++-+--'f-+-+--I
>
V
nA
nA
VCE 10 V
VCE=S V
2
pF
2
p'S
VCE=O V
IF =10 mA
VCE = 10 V
S
SO
SO
2S0
IL·S12
0.3
0.5
V
0
25
50
75
100
CASE TEMPERATURE
FIGURE 2. DARK
CURRENT VS
TEMPERATURE
/
/
=
IF=16 mA
Ic= 1.6 mA
IF=SO mA
Ic= 2 p.A
DC Current Transfer Ratio
0.1
-25
10"
V
10-10
/
10-11
/
"/"-"_"--'--1._'--'
-so -25 0 25 50 75 100
10.12
CASE TEMPERATURE ("C)
V
O.S
-50
10"
O.S
0.2
o~~~~~~-L~
Ic=1 mA
Ic=1 mA
IE= 100 p.A
IE = 100 p.A
0.3
Breakdown Voltage
Resistance,
Input·to·Output
Capacitance,
Inpul·lo·Oulpul
o~
...
1.0
0.8
Ic= 100 p.A
VCE=S.O V
IL·S01/SOS
IL·512
~
~
~
IL·S01/S0S
IL·S12
so
BVcEO
IL·S01/SOS
30
IL·S12
20
BVECO
IL·S01/SOS
7
IL·S12
4
ICEO (Dark)
IL·S01/SOS
IL·S12
Capacitance
Coliector·Emitter
Output Rise and
Fall Times
Coupled Characteristics
Coliector·Emltter Saturation
Voltage VCE(sat)
IL·505
...z
g 0.4
HFE
IL·501
TYPICAL OPTO·ELECTRONIC
CHARACTERISTIC CURVES
0.3S
0.70
0.2
SOOO 7000
IF =10 mA
VcE =10 V
IF =10 mA
VcE =10 V
IF =10 mA
VCE=S V
VDC 1=1 Min
FIGURE 3. TRANSFER
CHARACTERISTICS
30,--,.....,..-,-,.--,--,
25
I--+--+--+--+--V/'-l
20
1---t--t-+-...y/-+-1
15
10
I--+--+---Y/'+-+--J
I---t--v/+-+-+--t
/
./'
'0
0.5
20
30
40
sa
60
LED INPUT CURRENT (mA)
o
pF
FIGURE 5. SWITCHING
TIME VS COLLECTOR
CURRENT
FIGURE 4. DETECTOR
OUTPUT
CHARACTERISTICS
16
I
.~
VeE = 10
14 -
12
10
v
+--+-t--i
I
~f;;::::
RL ; , K I l - -
o~~~~_~-L~
o
8
10
12
COLLECTOR CURRENT - Ie (mAl
COLLeCTOR VOLTAGE - Vee (VI
224
litronix
SFH 600 SERIES
A Siemens Company
SINGLE CHANNEL
PHOTOTRANSISTOR OPTO·ISOLATOR
Package Dimensions In Inches (mm)
.307
~~
rnl--Vm1
~
n// !
:
:
I
I
I
I
!HI ~I!L________ 1 __ J
1
.256 •
B
6
C E
4
o
1
A
.3 (7.62)
3
.24B
1 ANODE
2 CATHODE
3 NOT CONNECTED
4 EMITTER
5 COLLECTOR
6 BASE
A(+)
K(-)
K
Maximum Ratlnga
Reverse Voltage (V R) ..........•.. , .•.......•.................•..... 6 V
Forward Current (IF) ........•.....•...•........................... 60 rnA
FEATURES
•
High Quality Premium Device
•
Long Term Stability
•
High Current Transfer Ratio,
4 Groups
SFH 600·0, 40 to 80%
SFH 600·1, 63 to 125%
SFH 600·2, 100 to 200%
SFH 600·3,160 to 320%
•
2600 Volt Isolation (1 Minute)
•
Storage Temperature
-55 to +1SO·C
•
VCE SAT 0.25 ( < 0.4) Volt
IF =10 mA, Ic=2.5 mA
DESCRIPTION
The optoelectronic coupler SFH 600
comprises a GaAs LED as the emitter
which is optically coupled with a
silicon planar phototransistor as the
detector. The component is located in
a plastic plug·ln case 20 AB DIN 41866.
The coupler allows to transfer signals
between two electrically Isolated
circuits. The potential difference
between the circuits to be coupled is
not allowed to exceed the maximum
permissable insulating voltage.
~~:rC~~:I~~~Fo~\~;)'~~. '....... '. : .... '..... '. '..... '. '... '. : : '. '. : .... '. : '... '... : '. '. '. : . ;00':~
Deleclor (SIlicon Phololra.llltol)
Call.ctar·Emltter Voltage (CcEol ..................................... 70 V
Emitter·Base Reverse Voltage (VEBO) .......•... , •......•....•......... 7 V
Collector Current (Ie) . . • . • . . . . . . . . . . . . . . . . . . • . . . . . . . • . . . • . . . . • . . . .. 50 rnA
Collector Current (Iesl, t = 1 ms .........• , . . . . . . . . . . . . . . • . . . . . . . . .. 100 mA
Power Dissipation (Ptot) . . . . . . . . . . . . . . . .. . .
. . . . . . . . .. 150 mW
Coupl.r
Storage Temperature (Tstor) ...•.....•..................... -55 to +150·C
Ambient Temperature (Tamb) ...................•.......... -55 to +1OO·C
Junction Temperature (Tj ) . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . .• 1OO·C
Soldering Temperature (T U. 1 Min ................................... 260·C
Isolation Test Voltage (1 Min.) (Vlsl (between emitter and detector referred to
standard climate 23150 DIN 50014) ............................... 2800 VTracking Resistance. . . . . • . . . . . • . . • . . • . . . . • . . .. . . .. . . . . . . . • .. Min. 8.2 mm
Air Path . . . • . . . . . . • . . . . . . . . .. ........•.......•......•...... Min. 7.6 mm
Tracking Reilltince
Group III (KC= >600) in accordance with VDE0110 § 6
Table 3 a.d DIN 53480NDE0303, Part 1
As to nominal isolation voltage DIN57883 or VDC0883 applies.
Isolation Voltage (Rls) at Vis = 500 V ....... . ........................ '0 1' 0
Climatic Conditione
DIN 40040, Humidity Cia•• F
Filmmlblilly
DIN57471 or VDE0471, Part 2. of April 1975 or MIL·202E, Method llA
Characteristics (Tamb = 25 ·C)
Emllter (GaA. LED)
............. 1.25 (,; 1.65) V
Forward Voltage (VF), IF =60 mA ...
Breakdown Voltage (VBR), IR = 100 ~ .. '
Reverse Current(IR), VR = 3 V ..... .
Capacitance (CO), VR=OV, f=1 MHz ... .
Thermal Resistance (Rth Jamb) ........ .
30(":6)V
....... 0.01(,;10),A
.. 40pF
............ 750 KIW
Detector (Silicon Phototransistor)
Capacitance, (VCE = 5 V, 1=1 MHz)
CCE" ........... .
CCB
CEB
. .. 5.2 pF
....... 6.5 pF
...... 9.5 pF
500 KIW
Thermal Resistance (R th Jamb) ......... .
Specifications subject to change without notice.
225
-
--~---.~~~~---
I
Chal'llcterlstfca (Continued)
Couplo,
Collector·Emltter Saturation Voltage (VeE sat)
*
I, = 10 rnA. 10'= 2.5 rnA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 0.25 (" 0.4) V
Coupling Capacitance (CK) . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 0.55 pF
The couplers are grouped in accordance with their current ratio
and Vee = 5 V and marked by Roman numerals.
Group
IC
IF
Coliector·Emltter
Leakage Current
(VCE = 10 V) ICEO
at IF = 10 rnA
0
1
2
3
40·80
63-125
100·200
160.320
%
2(,,351
2 (,,35)
2(,,35)
5(,,70)
nA
Lin'" operation (without saturation)
75
II
3.2 «4.6)
p.S
2 (s3)
p.S
Siorage Time (Ial
3.0 «4.0)
~s
Fall Time (I,)
2.5 (",3.3)
p.S
250
kHz
Load Resistance (Ru
Delay Time
(y
Rise Time (I,)
Cut·off Frequency ('g)
= 10mA
v" = 5V
ramb = 250C
I,
Switching operation (with saturation)
!£...
.5V2.7kn
11cQ
~.'2TTLI""'''
with pu'I-up resistor
of 2.7 kQ
TTL leve' II observed
but ~ TTL switching times
Group
Swltch·On Time (toln)
HIM melt,)
Swllch-Off Time (tau.)
Fall Time (t,)
VCEsat
~
l.nd2
0
IF=20mA IF=10mA
IF=5mA
3.7 (s5.8)
4.5 (",6.2)
5.8 (s8.0)
:.0'S4.0)
3 S4.Z)
4 SO.O)
19 (s25)
11 (sI4)
21 (s27)
12 (sI5)
0.25 (sO.4)
24 (s31)
14 (sI8)
226
3
p.S
p.S
p.S
p.S
V
TTL
Minimum currant tran.r.r retlo
.. a 'unction of dloda current
IT...... - 2SOC. Vel" 5 V)
"
% J;"'fIM
300
Current tran.'er r.lo a ••
'unction of dloda current IT........ -25OC)
Cu.....nt tr.Rlfar 'ttlo •••
function 0' diode ourrent (T_ ... OOC)
-{; .. flM
4;-""f(l,)
%
-
I,
I
zoo
,
10
i
100
+,5
I
0
1
1
,/'
10
2
3
2
3
- 11
-I
~
10'
10'
10"10 '
CUrrant trensf., r.tlo •• a
function 0' diode current IT."",
t=flM
10' rnA
--1,
-IF
Current tr.n"" retlo •••
0' diode current IT.m..
~nctlon
2SOC)
go
1;-f(/,)
vCE=5V
-
Current .r.n..... retle . . .
function of diode current (T..,. -1.-':»
SOOC)
t.
VCE=5V
%
10'
~
Ie
4;-
1 10,
~~
Vce=5V
flM
N
5
T,
IF
1 10'
~
10'
0
V
,/""
10
"2
V
V
Vce=SoJ'
,
10
,
10
%
!;;..
o
VCE=5 V
......
~
5
t 10'
5
0
~
1
V
2
3
10
,~""
0
i'-
1
2
3
10'
~
?-
5
10"
10 '
0
10"
5
--1,
10"
10' rnA
Current tren"ar r.tlo a. a
function of temperature
I,
l;"'f(1)
'It
"'.n.istor chaf8cterlatkl. IS .. 660)
Ie = I{VcEl
(IF=10 mA,vCE=5 V)
ITamb= 25·C, 'F=O}
Groupz.a
IRA
10'
30
I
I
Ie
l
3
,
10
20
1
15
10
,..
I.=~
-
-
..-
I
I••30pA
I-"
I
~
=2OpA
1•• 15pA
1..10-"
.
I •• SpA
,
25
50
--T
75"C
15V
227
I
Outputchal'lletariMlcalc "/lV••1
Fonnrdvoltllga V. "'/1M
COllector-emltler ott-stete current
SMunition volt ••a., a function
of collector curr.nt .nd modul.tion depth
for SFM 800-0
n
'c£c" flY,
(Tam b",25"C.IF=O)
(Tamb",,25"C)\ Group2&3
(l;.mbl=25 ·C)
mA
V Vceo .. =f{Icl
lp
1,2
II
II
D,9
D,9
I,U)Ie
01
1,1
o,s
o,s
L
~.
1,0
V
o,s
0,2
0,1
10°
V (Tamb",25'C)
1,0,...
i!! T'
. -d~
0,7
0,6--
,:,..tH
O,S
0,10 0,3
r~t-"'T
Ii j ,,!~
1
lODoe
10'
0,7
0,6-
0,'
o,s
O,S
10'
5
--Ie
c
1" H.joI;jj!!ltt--THtttHitttffl
1Il
r-tiittl1lHrtttHllil~,ttttttH
0,4
~
0,2 _'--I--:Lu...,.,.
--I,
'-"" ....... puIH I••d
, • ".rIm"', T_ • 21'C
J,-M
-'~,"
-------Ie
,b,.
Pennl..
loe,
trenal,tor Ptot '" f(Tamb)
Tran,lator cap.citancaa c'"", flVo)
(Tamb=25°C; f'" 1 MHz)
hnn...........
dllNlap",.- flT-J
and lMode
mA
mA
I,
I, ' "
r [-II
I .. I
r-
I
I
60
"
so
25
75
lOO
o
e
25
50
75
1Qooe
-1(..
--v.
V.rt.tionofourr.nttl'llnafarratio
. . . functJon of load tima
,,.
7;-=flll
%
I,
T,
1..
90
I' 1,1
II1'111! I!'II Ir~~ ~~:,:,;'
~I,l'I, I'r': 111n~
I
1)'r
11
80,.,
,1 I' '
=60'C
I,T, ••
'" 30
mA .. measurement current
,~f) =j~,I· ~1 95.:j ~l, i~ ~~~
~ i l !1 1I1 . ~
w'
10'
fi'
-~,
228
m2 mA
. 1'11"
I
V"l·~:: '
0,7 '
5
Diode capaoltano. C • ~V""
(Tamb =25"C, '=1 MHz)
S.tur.tion volta. . . . . function
ofcoll.ctorcurr.nt,ndmodyl.tklnd.pth
for i 5FH600-3
VeE ... = III.)
(Tam b",25"C)
V
1,0
1M ,
'Jr'
1°"
75
_T
",.1.1
Vcfsa,O,9 •
50
25
II (Tamb=25"C)
1,0 ,..-- I , 'I'TI
, !111: ~ ~
~
--I,
10 2 mA
Seturatlon volt.. a ••• function
of collector curr.nt .nd modul.tkln dapth
for SFH 800-.2
Vc£ .., "IVoI
Seruratlon IIolta,a a,. function
of collaetor currant .nd modul.tion d.pth
for SFH 80CH
VCE .., " fll.1
ltt.tO,9 ~
10'
litronix
SFH 601 SERIES
A Siemens Company
SINGLE CHANNEL
PHOTOTRANSISTOR OPTO·ISOLATOR
Package Dimensions In Inches (mm)
138.142
13.51 (3.61
(3.31 (3.11
13~ ~t
C:~:"-I""'~+-J
307
(781
irrni--1
291'
I
MAX
10
(2.541
B
C E
CJ
1
A
3
1
2
3
4
-5
6
ANOOE
CATHODE
NOT CONNECTED
EMITTER
COLLECTOR
BASE
K
Maximum Ratings
Reverse Voltage (VA) ..... .
Forward Current (IF)
Surge Current (IFS), tp = 10 .... ,
Power Dissipation (Ptot) ... , , ,
FEATURES
• Highest Quality Premium Device
• Built to Conform to VDE Requirements
• Long Term Stability
• High Current Transfer Ratios, 4 Groups
SFH 601·1, 40 to 80%
SFH 601·2, 63 to 125%
SFH 601·3, 100 to 200%
SFH 601·4,160 to 320%
• 5300 Volt Isolation (1 Minute)
• Storage Temperature _40· to +150·C
• VCEsat 0.25 «0.4) Volt
IF=10 mA, Ic = 2.5 mA
"" 6 V
' ' ' , ' ' ' ' 60mA
1,5A
100 mW
Detector (Silicon Phototrlnilltor)
70V
, 7V
50mA
100mA
" " 150 mW
Collector·Emitter Voltage (VCEO) ,
Emltter·Base Reverse Voltage (VESOl . ,
Collector Current (Ie) ...
Collector Current (Ies), t
=
1 rns . , .
Power Dissipation (Pto t ) ... , ..... ,
Coupler
Storage Temperature (Tstor)
Ambient Temperature (T8mb)
Junction Temperature (Til ......... ,
Soldering Temperature ('I'Ll, 10 s Max.
Isolation Test Voltage (Vis), 1 Min.
(between emitter and detector referred to
standard ell male 23/50 DIN 50014)
Tracking Resistance
Air Path ...
Tracking R'alatinci
Group III (KC= >600) in accordance with
Table 3 and DIN 534801VDE 0303, Part t,
-40 to +150·C
-40 to +loo·C
100·C
" 260·C
5300 V-
Min. 8.2 mm
Mln.7.Bmm
voe 0110 +6
As to nominal isolation voltage DIN 57883 or VDE 0883 applies.
DESCRIPTION
The optoelectronic coupler SFH 601
comprises a GaAs LED as the emitter
which is optically coupled with a silicon
planar phototransistor as the detector.
The component is located in a plastic
plug-in case 20 AB DIN 41866.
The coupler allows to transfer signals
between two electrically isolated circuits.
The potential difference between the
circuits to be coupled is not allowed to
exceed the maximum permissible
insulating voltage.
VDE test symbol will be applied for.
Isolation Voltage (Ris), @ Vis = 500 V ............ .
Climatic Condltlona
DIN 40040, humidity Class F
Flammability
DIN 57471 or VDE 0471, Part 2,
01 April 1975 or MIL202E, Method 11 A
Characteristics (T amb
=25 ·C)
Emilier (GaAt LED)
Forward Voltage (VF), IF 60 mA ..... .
Breakdown Voltage (VeR), IR = 1oo.A
Reverse Current (IR), VR = 3 V ...... .
Capacitance (CO)
(VR=O V; 1= 1 MHz) ,
Thermal ReSistance (RthJamb) ....
=
1.25(~1,65)V
30(,,6) V
"
0,01
(~10).A
" 40 pF
750 KIW
oltector (Silicon Phototrlnllstor)
CapaCitance (VCE = 5 V; 1 = 1 MHz)
, 6,8 pF
CCE ' " ' ' " " ' " '" " " " ' "
Cce ,,'
"" """"
' ' ' , ' ' ' ' 8,5 pF
CEe ."., " "
Thermal ReSistance (RthJamb) ,
" , , " " " " 11 pF
Specifications subject to change wit,hout notice.
229
500 KlW
I
Characteristics (Continued)
Coupler
Coliector·Emitter Saturation Voltage (VCEsat)
(IF= 10 mA,lc=2.5 mA)' ........................... 0.25«0.4) V
Coupling Capacitance (C K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 0.30 pF
The couplers are grouped in accordance with their current ratio ~ at
IF= 10 mA and VCE = 5 V and marked by numbers.
IF
Group
Ie
iF
Collector· Emitter Leakage
1
2
40·80
63·125
3
4
100·200 160·320
%
21<50) 21<50) 51<100 51< 100
nA
Current{VC=10V),ICEO
Linear operation (without saturation)
Load Resistance (RLl
75
Il
Delay Time (td)
3.0 (s5.6)
~s
Rise Time (tr)
2.0 (s4.0)
~s
Storage Time (ts)
2.3 (s4.1)
~s
Fall Time (tf)
2.0 (s3.5)
~s
250
kHz
Cut·off Frequency (Ig)
IF
"" lOrnA
VCE
= 5 V
Tamb = 25°C
Switching operation (with saturation)
L
lkQ
~"2TTL,"P'"
: ' with pull·up resistor
TTl level is observed
but no TTL switching times
Group
1
~ •!5V'2"7~k"
TTL
of 2,7 kll
2 and 3
4
I F =20 mA
IF= 10 rnA
IF=5 rnA
Switch·On Time (tel n)
3.0 (s5.5)
4.2 (sB.O)
6.0 (s10.5)
~s
Rise Time (tr)
2.0 «4.0)
3.0 «6.0)
4.6 (sB.O)
pS
Switch·Off Time (toff)
1B (s34)
23 (s39)
25 (s43)
p.S
Fall Time (tf)
11 (s20)
14 (s24)
15 (s26)
~s
0.25 (sO.4)
VCE sat
230
V
Minimum current tran.f.r ratio
a. a function of dloda currant
I,
% I;
300
= ((If)
7;- . .
Vce=5V
((If)
,
%
Ie 10
ls-min
~-
200
1
-
2
10'
3
'/
10'
~
1---1
I
/
10'
10'mA
10'
5
--IF
Currant transf.r ratio a. a
function of diode current t T. mb
*=((1,)
10'
10' 2 mA
=
t
L
10-'
7;- =
Vce=5V
%
%
10'
10'
%
10'
= ((h)
-
f-
1
5
1()0
f-
--
510'
--I,
2mA
CUrrent trlnaf.r retlo •••
function of dlod. current (T."'II .. 7SOC)
Currant tran.far ratio aa a
of diode currant (Tlmb = 500(;)
~unctlon
25°C)
2
._.-
--IF
Vce=5V
~
!.-
7
7
/
c;...
100
~-
/11
2
I-L
V
1
100
OOC)
10'
j..l-
V
4
..
Vce=5 V
(II,)
%
Ie
T
I,
1
Currant tran.f.r r.tlo a••
function of dloda curr.nt (T....II
Current tranafar ratio •••
function of diode currant I Tlmb .. -26"Cl
"* '"
(Tlmb ,. 26°C. VCE .. 6 V)
Vce=5V
((M
Ie
Ie
T
10
1
~
P2
/
,
-
~
j..l-
V
10'
4
~
//
2
2
10'
1
1
1
/
V
10
10-' 2
1/
/
VI
,
5
10 0
5
10'
10' 2 mA
'Iv
10-' 2
5 10'
--IF
5
10'
10' 2 mA
Ic = ((VeE)
(Tamb = 25°C, IF=O)
mA
% h
3D
Ie 10
I
J
'3
1
,
10 ,I
I'
IIII
IIII
I~_'4d ~'A
I I II
I
1
4
20
1,- 30,!!-
I
2'
1
i
II II
I.-2~
1
10
,
1
10, I
-25
I
II I I
1,-
,
1,1.-
III
III1
25
50
--T
75'C
lo~A
5~'A
2~A
10
--VeE
231
5
1D"
5
-IF
Tran.lst",r characteristic. IB ... 550)
.!..£ '" (( n ! (IF = 10 mA, Vce = 5 V)
1
/
10-' 2
--IF
Currant 1ran.far ratio a. a
function of temperature
,
'/
J
15 V
10'
2mA
I
Output charactariatica Ic '" flVcol
Forward volta,a V,
~
11/,1
mA
3D
1,2
1
.A
10'
-~
111
Ie
r;
,
9
T"o,a
Vce- 1OV
!
75-(
1,1
ID
jv,,".ov
ICEe
~SOD(
20
Saturation voltall'"a lunction
of colllfCtQr currallt and modulation dapth
for SFH 601·1
VCE sal = !(Iel
V (Tamb =2S·C)
Collector-emitter off-atate currant
Ic.~ = I(V, TJr(Tamb",,25·C, IF=O)
(Tlimb = 25 ~C)
7
I~'
o.
II /
I·
1,0
00
0,9
15V
10
10'
--v"
Saturation voltaga .. afunction
of collactOf currant and modulation dapth
for SFH 801.2
II VCE sal=f(lcl
9
10'
!
O~
.1
IF-h/c
"
,3~
2
,I
0
10'
j
II11
h-3x /c
II 11
IIII
P"mINlbl' pul.. IlMId
p·paramal.r.T.... -2&"C
I,- .U'
,
!:!
~
I
Ti'iie
I
,2::::,
r;;-
,I
I
0
10'
lQ2mA
10 1
5
--Ie
OF
50
II
10
i
5
10 1
lUi!
5
--Ie
102mA
..... ml ....... I _
t,analato'Po.j-IiT_,
Translator capacitances C
lllocI.P.... IiT-J
""rTTT_TTTI111n-T
22l"f'l'IIIIIlt-ttttffiH
I,
I,
20H-tlttIIlt-'l:tttffiH
18H-tlttIIHMH
!
15 H-tlttIIHtH~1hl
14H-tlttIIHtttffi~
12FH~~1llt'
60
10H-t_tttH---ttttto
aHitttlllt-ttltttllr
30
100
so _ _75r....
"
0(
100
0 (
Variation 01 ourr.nt tranel.rratlo
.. a lunction of load tlma
"
7;
%
"'f{t)
110
f-90
f-- ; I
-
t':l l~
"",
10'
!
---j.
r--.
iI
;,
II
I
I
I
1
10'
232
Vc• g 6V
R, = 1kQ
Tom. =
IF = 30 mA '" measurement current
11m
,
,
~
pfl (TAm b=25°C; f"" 1 MHz)
mA
110
50 _ _7S r....
illlQ2mA
IF-Zx/C
PannlNlbl. ION
"
5
'
'I' I II iJ
I II, I! I
,3
I II
5
,1
10
Y{l
!
1
- 2x1c
11111
I
i
5
.4
,I
III
_Wl,
.1
o.
02
(Tamb=25°C)
a
If
i
I
--Ie
-l1IJ]]
9,
0'
V
5
I
:
Saturation voitalla aaa function
01 colllfCtorcurrant and modulation dapth
fotlSFH 801·4
5
O~
lOO"C
75
50
VWCE sat:f(lcl
\0
/
o.
5
25
--7
I
7
.
,I
10'
-25
10 2 mA
10'
1,'. ~e
0,a
III
3
2
Saturation voltaga aa a function
of collactor currant and modulation dapth
fo"SFH 801·3
sat = f(lc) (Tam b=2S·CI
V.CEllt°.9
VCbat
1
II' ~j I
V,VCE
I,0
In
1
1
Q'
I~2
--I,
I
(Tamb = 25°CI
IF-3It1c
0,5
JJ.~
.j
9S·/oj
eooc
R,,, .. ,,,.-750k/W
PropabditVS .. eO%
I
t.:.-IU
.~, W
~. T% !
jj I j 1m
"
10'
-_I
MedlCln
'!V.)
litronix
4N25,4N26,
4N27,4N28
A Siemens Company
PHOTOTRANSISTOR
OPTO·ISOLATORS
Package Dimensions In Inches (mm)
I
CONNECTION DIAGRAM DIP (TOP VIEW)
FEATURES
•
-""~-
CATHODE !-I
2
N.C.
3
~
5
COLLECTOR
4
EMITTER
2500 Volt Breakdown Voltage
•
High DC Current Transfer Ratio
•
I/O Compatible with Integrated Circuits
Absolute Maximum Ratings:
•
0.5pF Coupling Capacitance
Gallium Arsenide LED:
•
Underwriter Lab Approval #E52144
DESCRIPTION
The LlTRONIX 4N25, 4N26,
4N"21, and 4N28 series are optically cou·
pled pairs, each consisting of a Gallium
Arsenide infrared LED and a silicon NPN
phototransistor. Signal information, in·
cluding a DC level, can be transmitted
by the device while maintaining a high
degree of electrical isolation between in·
put and output. They can be used to reo
place relays and transformers in many
digital interface applications. They have
excellent frequency response when used
in analog applications.
PIN NUMBERS
1
2
3
4
5
6
Anode (+) }
Cathode (-)
NC
Emitter
Collector
Base
}
Input Diode
Output npn
Ph ototransistor
·Power Dissipation @ 2SoC . . . . . . . . . . . . . . 150mW
*Derate Linearly from 2SoC . . . . . . . . . . . 2.0 mWf'C
·Continuous Forward Current . . . . . • . . .
. SOmA
3.0A
• Forward Current Peak (11Js pulse, 300 pps).
·Peak Inverse Voltage . . . . . . . . . . . . . .
. . . 3.0V
Detector (Silicon Photo-Transistor)
·Power Dissipation @ 2SoC . . . . . . . . . . . . . . 150mW
-Derate Linearly from 2SoC . . . . . . . . . . . 2.0mWlC
·Collector-Emitter Breakdown Voltage (BVCEO). . 30V
* Emitter-Collector Breakdown Voltage (BVCBO).
7.0 V
• Collector-Base Breakdown Voltage. . . . . . . . . . . 70V
Package
*Total Package D.iasipation (§) 25°C Ambient
(equal power in each element)
. . . .. 250mW
·Derate Linearly from 25°C. . .
. . . . 3.3mW/C
·8torage Temperature. . . . . . .
-5SoC to +150°C
·Operating Temperature. . . . .
-5~C to +100°C
• Lead Soldering Time @ 260° C .
. . . . . . . 10 sec.
• indicates JEDEC registered values
Specifications subject to change without notice.
233
ELECTRICAL CHARACTERISTICS
PARAMETERS (at 25° Ambient)
Typ
Min
Parameter
Max
TYPICAL CURVES
FIGURE 1. RELATIVE
OUTPUTVS
TEMPERATURE
Test
Condition
Unit
1.3
0.1
100
.. Forward Voltage.
• Reverse Current .
Capacitance . . . .
Photo-transistor Detector
1.5
100
~
'F~50mA
V
/-IA
pF
a:
...::>
VR~O
w
>
~
Ic=1mA
lE~100/-lA
IC~100/-IA
5
10
2
.
0
-50
50
100
20
nA
VCE~10V
nA
nA
(base
0
pen)
0
75
50
2S
10-5
2
VCE~O
pF
~
100
/
VCE=5V
10-6
"~ 10-7
5'
....
/
10-8
/
10-9
.....
0.2
0.5
4N27. 4N28 ..
0.1
0.3
'F~10mA
"CE~10V
IF~10mA
VCE~10V
I
"1
0.5
10-10
~
V
V
Peak
500
V
Peak
./
10-12
-50
Peak
....
E
Gn
100
2
IF~10mA
/-Is
VCE~10V
·Collector-Emitter
0.5
Saturation Voltage
/
10-11
"
0
-25
0
25
50
75
100
CASE TEMPERATURE ('C)
2500
1500
Rise and Fall Times
/
*
::>
u
pF
.. Resistance, I nput to
Output . . . . . . .
-25
FIGURE 2. DARK
CURRENTVS
TEMPERATURE
\iCB~10V
(emitter open)
Collector-Emitter
Capacitance . . .
~p'led Characteristics
-DC Current Transfer
4N28 . . . . . .
0.'
CASE TEMPERATURE
·.
"Breakdown Voltage
4N25 . . . . . , ..
4N26. 4N27. . ..
>--
V
/
0.6
0
V
V
V
/
0.8
i!:::>
VCE~5.0V
30
7
70
·
Capacitance, Input
toOutput • . . . . .
1.0
::>
u
VR~3.0V
150
HFE· . • . . . . . .
"BVCEO ••.
"BVECO . . .
"BVCBO . . .
"ICEO (dark)
4N25.
4N26.4N27.
.
4N28 . . . . .
"ICBO (IF~O)
·
Ratio
4N25.
4N26.
1.2
...
Gallium Arsenide LED
'F~50mA
IC~2.0mA
V
I
30
20
...u::>
15
::>
i!:::>
0
a:
g
/
VCE=5V
25
~
~
• Indicates JEOEC registered values
FIGURE 3. TRANSFER
CHARACTERISTICS
L
/
/
10
/
5
./
0
0
10
20
30
40
50
60
LED INPUT CURRENT (rnA)
FIGURE 4. DETECTOR
OUTPUT
CHARACTERISTICS
.
10
5'
8
IF =20rnA
E
...I
~
::>
u
a:
...
0
~
IF=15rnA
6
IF "JmA
•
I F1=5mA
2
0
u
0
0
5
10
15
20
25
30
COLLECTOR VOLTAGE - VCE (V)
234
litmnix
4N35, 4N36, 4N37
A Siemens Company
PHOTOTRANSISTOR
OPTO-ISOLATOR
,
~IN
.,,
NO
ANOOE
CATHODE
"
EMITTER
COLLECTOR
SASE
o~
I ~~~I
Maximum Ratings
Gallium Arsenide LED
Power Dissipation @ 25°C ...
. . . . 100mW
.. 1.33
. . . . . . . . . 60mA
mwtC
Derate Linearly from 25"C .
Continuous Forward Current.
Peak Inverse Voltage
. . . . . . . . . . 6.0V
Detector (Silicon Phototransistor)
Power Di,ssipation @ 25°f. . . .
. . . . . . . . . . . .. . .. 300 mW
Derate Linearly from 25 C .
. . . . . . . . . . . . . . . . . . . . 4.0
Collector-Emitter Breakdown Voltage (BV CEO )
. . . 30 V
Emitter-Collector Breakdown Voltage (BVEeo)
7V
mwtc
Collector-Base Breakdown Voltage (BVCBO) .
. .. 70 V
Package
Storage Temperature* .
. . . . . . . . . . . -55 to +150°C
. .... -55 to + 100 Q C
Operating Temperature . . . . . . .
Lead Soldering Time@260°C.
10 sec
Relative Humidity @ a5°C*.
.85%
Electrical Characteristics (at 25°C Ambient)
FEATURES
Parameter
Gallium Arsenide LED
Forward Voltage* .
Reverse Current* ..
Capacitance .
Phototransistor Detector
HFE .
Min
BV CEO * .
•
1500 to 3500 Volt Breakdown Voltage
• High Current-Transfer-Ratio (100% Min)
• Industry Standard Dual-In-Line
• 0.5 pF Coupling Capacitance
• Underwriters Lab Approval #E52744
DESCRIPTION
4N35, 4N36, 4N37 are optically coupled
pairs employing a Gallium Arsenide infrared
LED and a silicon NPN phototransistor.
Signal information, including a DC level,
can be transmitted by the device while
maintaining a high degree of electrical
isolation between input and output. The
4N35, 4N36, 4N37 can be used to replace
relays and transformers in many digital
interface applications, as well as analog
applications such as CRT modulation.
BV eEo ' ....
ICEO(dark). .
ICEO (dark) *
BVCBO
*..
Collector-Emitter
Capacitance.
Coupled Characteristics
DC Current Transfer
Ratio· .
DC Current Transfer
Ratio* .
Capacitance, Input
to Output*.
Resistance, Input
to Output*.
100
Tvp
Max
Unit
1.3
.1
1.5
10
100
V
pA
pF
50
500
V
V
nA
pA
150
30
7
Test
Condition
IF'" 10mA
V R '" 6.0 V
V R "'Of'" 1 MHz
VCE '" 5.0 V
Ic'" 100.uA
Ic "" 1 mA
IE" 100pA
V
V CE "" 10V, IF =0
VCE"'30V,IF"'O
TA '" 100°C
Ic'" lOOI1A
pF
VCE '" 0
100
%
tF '" lOrnA,
TA "" 25°C
VCE '" 10 V
40
%
IF"" lOmA
VCE=10V
T A '" 55° to 'IOO°C
2.5
pF
f= 1.0MHz
10
!l
p,
VIC'" 500 V
te '" 2 rnA
70
1011
Ton Toft .
RL" 100!l
VCC=10V
Collector-Emitter Saturation
Voltage VCE{sat) * .
Input to Output Isolation
Current (Pulse Width '"
8m. sec)* .
4N35 .
4N36 .
4N37 ..
0.3
V
100
100
100
pA
pA
pA
IF'" 10 rnA
Ie'" 0.5mA
VIO '" 3550 V
VIO '" 2500 V
VIO '" 1500 V
-Indicates JEDEC Registered Data
Specifications subject to change without notice.
235
I
litronix
4N32,4N33
A Siemens Company
PHOTO DARLINGTON
OPTO-ISOLATOR
Package Dimensions in Inches (mm)
r-~
I 121
f
.360
~
(660)
"~.5
~'N NO.
ANODE
5
6
COLLECTOR
BASE
!
2
~~;:E:E
3
6
'"
i.....:~I'"T.:lI'"T.:l,J
Maximum Ratings
Gallium Arsenide LEO (Drive Circuit)
Power Dissipation at 2SOC . . . . . . . .
Derate Linearly From 5SoC ..... .
Continuous Forward Current .... .
Peak Reverse Voltaqe . . . . . . . . . . .
Photodarlington Sensor (Load Circuit)
Power Dissipation at 2SQC Ambient
Derate linearly From 2SoC .. .
Collector (load) Current .... .
Collector-Emitter Breakdown
Voltage IBVeEO). .....
Collector-Base Breakdown
Voltage IBVeeo) .......... .
Emitter-Base Breakdown
FEATURES
•
1500 or 2500 Volt Isolation Voltage
• 5OO%CTR
• High Isolation Resistance (10" il
Typical)
• Low Coupling Capacitance
• Standard Plastic Dip Package
•
Underwriters Lab Approval #E52744
DESCRIPTION
The 4N32 and 4N33 are optically coupled
isolators employing a gallium arsenide
infrared emitter and a silicon photo
darlington sensor. Switching can be
accomplished while maintaining a high
degrees of isolation between driving and
load circuits. They can be used to replace
reed and mercury relays with advantages
of long life, high speed switching and
elimination of magnetic fields.
.............
l50mW
..2mwfC
. .. SOmA
. . . . . . . . . . . 3V
..... 150mW
. .. 2.0mWtC
. . . . . . . . . . . . . . . . 125mA
. ... 30V
. ... 50V
Voltage (BVeBO) . . . . . . . .
., .. 8 V
Emitter·Collector Breakdown
Voltage (BVECO) ..
. ..... 5V
Package
Total Dissipation at 25°C . . . . . .
. ............. 250mW
Derate Linearlv From 2SoC"" ....... .
. ..... 3.3 mwtc
Storage Temperature"" . . . . . . . . . . . . . . . . . . .
-55"C to +150"C
-5SoC to +l00°C
Operating Temperature . . . . . . . . . . . . . . . . . .
Lead Soldering Time at 260°C . . . . . . . . . . . . . . . . .
.. ... 10sec
Electrical Characteristics (at 25°C Ambient)
Parameter
GaAs Emitter
Forward Voltage"" .
Reverse Current"".
Capacitance .
Sensor
HFE " .....
BVCEO
.
BVCBO
Tes'
Typ
M...
Unit
1.25
0.01
100
1.5
100
V
pA
pF
13K'
Condition
IF"=50mA
VR' 3.0V
VR = 0
VeE' 5 V
Ic = a.SmA
..
30
V
'e' I OOpA
..
50
V
'e' I OOpA
BVEBO
..
BVECO
ICEO"" .
....
IF = 0
V
1.0
Coupled Characteristics
Current Transfer Ratio" .
VeEISAT)
Min
500
Turn-off Time
.....
Input to Output Current"" .
4N32 ............
4N33 ..... , ..... ,
V
nA
%
.......
Isolation Resistance" .
Isolation Capacitance
Turn-on Time ...
100
1.0
10 11
1.5
V
ohm
pi
ps
IF'" 0
Ie '100/lA
IF'" 0
IE '100/lA
VCE'" 10V
IF'" 0
IF'" 10mA
VCE"""'OV
Ic :::2mA
IF'" 8 mA
Vlo=500V
Vee' TOV
120
ps
Ic '" SOmA
IF=200mA
100
100
pA
pA
Pulse Width'" 8ms
V,O· 2500 V
VIO'" 1500 V
RL 'I80n
-Indicates JEDEC Reglltered Data
Specifications subject to change without notice.
236
litronix
ILA·30, I LA·55
A Siemens Company
PHOTO DARLINGTON
OPTO·ISOLATORS
Package Dimensions in Inches (mm)
,~.,
,
,
,
f>IN NO.
1
2
3
4
ANODE
CATHODE
N/C
EMITTER
COLLECTOR
BASE
I
FEATURES
• 1500 Volt Isolation Voltage
• 100 mA Load Current Rating
•
Fast Turn On Time - 10MS
•
Fast Turn Off Time - 35Ms
Maximum Ratings
Gallium Arsenide LED (Drive Circuit)
Power Dissipation at 2SoC ..
Derate Linearly From 55° C
Peak Reverse Voltage
Photodarlington Sensor (Load Circuit)
Power Dissipation at 25° C Ambient .
Derate linearly From 2SoC
• Solid State Reliability
• Standard Plastic DIP Package
•
Collector (load) Curr~nt
Collector· Emitter Breakdown
Voltage lBVCEO) ..
Collector-Base Breakdown
Voltage (BVCBO) . . . .
Emitter-Base Breakdown
Voltage IBVEBO) ..
Underwriter Lab Approval #E52744
DESCRIPTION
The I LA-30 and I LA-55 are optically
coupled isolators employing a gallium
arsenide infrared emitter and a silicon
photo darlington sensor. Switching
can be accomplished while maintaining a high degree of isolation between
driving and load circuits. They can
be used to replace reed and mercury
relays with advantages of long life,
high speed switching and elimination
of magnetic fields.
. ... 90mW
1.2 mWrC
. . . . 60mA
.• 3V
Continuous Forward Current
Package
Total Dissipation at 25°C
Derate Linearly From 2SoC
Storage Temperature
Operating Temperature.
Lead Soldering Time at 260°C.
ILA·30
210mW
ILA·55
210mW
2.8 mWfC
2.8 mWfC
100mA
100mA
30V
55V
JOV
55V
8V
8V
250 mW
3.3 mwtC
. . . . . -55°C to +150°C
. . . . . . . . -5SoC to +100°C
10 sec
Specifications subject to change without notice.
237
Opto-Electrical Characteristics
Paramet.,
GaAs Emitter
Forward Voltage
Reverse Current . . . . .
Capacitance
Sensor
Min
(at 25° Ambientl
Typ
Ma.
1.25
0,01
50
tire
Condition
V
IF=SOmA
VR=3.0V
VR =0
1.5
10
~A
pF
13K
BVCEO·
30/55
BVCBO· .
30/55
V
V
V
BVEBO·
0.01
ICEO ..
Test
Unit
1.0
~A
VCE = 5V
IC=O.SmA
IC = 100~A
IF = a
IC = 10~A
IF = a
IE = l~A
IF = a
VCE = 5V
IF = a
Capacitance
Collector-Emitter ..
Collector-Base . .
Emitter-Base . . . . . . .
Coupled Characteristics
Current Transfer Ratio .
3.4
10
10'
100
1.0
VCE(SATI· . . . . .
Rise Time •.
Fall Time.
......
Isolation Voltage
Isolation Resistance . . .
Isolation Capacitance ..
pF
pF
pF
VCE = 10V
VCB = 10V
VEB = 0.5V
%
IF = lOrnA
VCE = 5V
IC = BOmA
V
10
35
"'
10"
V
ohm
pf
"'
1500
0.5
VCE = 13.5V
IF "50mA
RL = loon
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC CURVES
FIGURE 1. GaA. EMITTER:
FORWARD CURRENT VOLTAGE CHARACTERISTICS
FIGURE 2. DARLINGTON
TRANSISTOR OUTPUT
CURRENT VS VOLTAGE
160
:;;
I
.s 120
I
I
I-
ffi
a:
a:
100
:> 80
~ 60
~ 40
a:
~
100
""
so
Z
25 rnA
~rnh
BO
w
a:
a:
:;)
u
a:
15mA
40
'/
0
I-
U
w
..J
..J
L
20
/
0. 9
JL
lOrnA
20
IF =5mA
IP
0
U
1.0 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE (VOLTS)
-
30 rnA
/'1 l
I-
II
u
:;;
.s
I
140
1.6
a
0.4
O.S
I I
1.2
1.6
2.0.
COLLECTOR VOLTAGE - VeE (V)
FIGURE 3. DARLINGTON
TRANSISTOR CURRENT
VSVOLTAGE
100
:;;
.s
I-
z
II, = 12mA
90
~w
..J
..J
80
8
""
30.
20
10
a
10'
1 1 1
/
w 70
a:
a: 60
:;)
u 50
a:
40
FIGURE 4. DARK
CURRENTVS
TEMPERATURE
/
z
1 1 1
~1()3
a:
u
:>
.1 1 1
J I, -6mA
./
/
4
I-
III, =SmA
V
I
./
110
IF'" lOrnA
~ 102
«0
',II,~4mA_
.E 10
..... ~ V Jl I I
.A I" = ~ m~-
1
a
10 20 30. 40. 50 60. 70. 80 90.
COLLECTOR VOLTAGE IVI
25
50.
75
100
TEMPERATURE I'C)
238
125
litronix
ILCA2·30
ILCA2·55
A Siemens Company
PHOTO DARLINGTON
OPTO·ISOLATORS
Package Dimensions in Inches (mm)
'~6
.340
~
2
5
3
4
1;(9j~~)Aj
·ro-u·~
~
PIN NO.
1
2
3
4
5
6
'iT
(S.SO)
.2S0
..L....!
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
.070
~
(2.03)
.080
f~_~
I
.280
.!L.!!l
048
(8.38) (22) I
.330 iT32i~
1
I
I-
I
I
.052.
~..j!'
FEATURES
•
2500 Volt Isolation Voltage
•
Equivalent to MCA2·30/MCA2·55
•
125 mA Load Current Rating
•
Fast Turn On Time - 10llS
•
Fast Turn Off Time - 351ls
•
Solid State Reliability
•
Standard Plastic DIP Package
•
Underwriter Lab Approval #E52744
(.508)
.020
Maximum Ratings
Gallium Arsenide LED (Drive Circuit)
Power Dissipation at 25° C . . . . . . . . . . . . . . . . . . 90 mW
Derate linearly From 5SoC . . . . . .. . . . . . . 1.2 mWrC
COntinuous Forward Current . . . . . . . . . . . . . . . . 60 mA
Peak Reverse Voltage
DESCRIPTION
The I LCA2-30 and I LCA2-55 are
optically coupled isolators employing a \
gallium arsenide infrared emitter and a
silicon photo darlington sensor. Switching
can be accomplished while maintaining
a high degree of isolation between
driving and load circuits. They can be
used to replace reed and mercury relays
with advantages of long life, high speed
switching and elimination of magnetic
fields.
15'
(.305)
.012
•••••...•
• • . . . . . . • • . • 3V
Photodarlington Sensor (Load Circuit)
Power Dissipation at 2SD C Ambient. ..
Derate Linearly From 25°C . . . . . . ..
Collector (load) Curr'!nt . . . . . . . . ..
Collector-Emitter Breakdown
Voltage (BVCEO) • . . • . . . • . . . ..
I LCA2-30
210 mW
2.S mWrc
125 mA
ILeA2-55
210 mW
2.8 mWfC
125 mA
30V
55V
30V
55V
BV
8V
Collector-Base Breakdown
Voltage (BVCBO) . . . . • • • • • . • ..
Emitter-Base Breakdown
Voltage (BVEBO) • • • • • • . . • . . ••
Package
Total Dissipation at 26°C . . . . . . . . . . . . . . . . . 260 mW
Derate Linearly From 25°C . . . . . . . . . . . . . . 3.3 mWfC
Storage Temperature . . . . . . . . . . . . . . . -55°C to +15(fC
Operating Temperature . . . . . . . . . . . . . . -55°C to +1()(fC
Lead Soldering Time at 260°C . . . . . . . . . . . . . . . . 10 sec
Specifications subject to change without notice.
239
.~-~~~.---
_---
..
I
TYPICAL OPTO-ELECTRONIC
CHARACTERISTIC CURVES
Electrical Characteristics (at ~5u Ambient)
Min
Parameter
GaAs Emitter
Forward Voltage
Typ
Max
1.25
0.Q1
50
Reverse Current . . . . .
Capacitance
Sensor
Hie
.......
............
1.5
10
V
IF"" 20mA
~A
VR=3.0V
VR =0
pF
13K
BVCEO· . . . . . . . . . 30155
V
30155
V
BVCBO· .
ICEO
.. , ........
1.0
100
nA
Capacitance
Collector-Base . . . . . .
Emitter-Base ... . . . .
Coupled Characteristics
Current Transfer Ratio.
100
400
0.9
VCEISATI . . . . . . . .
Rise Time . .
Fall Time.
1.0
10
35
....
Isolation Voltage
Isolation Resistance . ..
Isolation Capacitance . .
VCE
VCB
pF
pF
pF
3.4
10
10
Collector-Emitter . . . .
160
IF = lamA
VCE = 5V
Ie'" SOmA
ffi
a:
~s
~ 80
10 11
0.5
II
u
Ii!
60
~
20
~ 40
a:
09
V
1.0 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE IVOLTSI
1.6
FIGURE 2. DARLINGTON
TRANSISTOR OUTPUT
CURRENT VS VOL TAGE
V
ohm
pI
2500
100
IF=50mA
VCE = 13.5V
IF =50mA
RL = lOOn
~s
I
I
f-
VEe = O.5V
V
I
<
E 120
= lOV
= 10V
%
I
140
VCE = 5V
Ic=0.5mA
IC= 100~A
IF =0
IC= lO~A
IF = 0
IE = l~A
IF =0
VCE = 10V
IF =0
V
BVEBO· .
FIGURE 1. GaAI EMITTER:
FORWARD CURRENTVOLTAGE
CHARACTERISTICS
Test
Condition
Unit
200
~
180
1
J
1
1 ,I .
I, = 50 rnA ...... ~
f"'"'
...... ~
;: 160 - I , =40mA._~
z
w 140
~
120
f"'"'
a:;
100
I-
§
80
u
..,..,....
I, =30mA_
I I I
I, =20mA_
~ 60
I I I
...J
8
40
.220
IF-10mAt--
I
I, =
01 1 I
.2 .4 .6 .8 1.01.21.41.6 1.8 2.0
VeE COLLECTOR VOLTAGE IVI
FIGURE 3. DARLINGTON
TRANSISTOR CURRENT
VS VOLTAGE
<
.§.
I-
zw
a:;
100
jl,=12mA
90
80
a:;
:::> 60
50
V
u
a:;
U
w 30
...J
...J
0
u
.2
20
10
I I I
IF -lOrnA
/
70
0
I- 40
I I
1 1 1
I, = 8 rnA
.1 I I
V J J I, = 6 rnA
/
I
./
/ ,II, =4mA,--
f"'"
""
JLII=JmA_
..A' 'I
0
FIGURE 4. DARK
CURRENTVS
TEMPERATURE
1 1
10 20 30 40 50 60 70 80 90
.1 '-----'_......1._--'-_-'-----'
50
75
100 125
o
25
COLLECTOR VOLTAGE (V)
TEMPERATURE
240
eel
litronix
IL·530
IL·555
A Siemens Company
PHOTO DARLINGTON OPTO·ISOLATOR
Package Dimensions in Inches (mm)
340
~
~(93~6)~
·.ra-U~
~
'iT
(6.60)
.260
..L......!
PIN NO.
1
ANODE
2
CATHODE
3
NC
4
EMITTER
5
COLLECTOR
6
BASE
'~6
2
5
3
4
070
~
(2.03)
080
I-
i.7J.1l
.048
(8.38) (1.22)-1
330 (G2)
j
I
HT.It-t'''l--f'''1t-
.280
I
t-
I
I
.052
(.305)
.012
15°
Maximum Ratings
FEATURES
•
5000 V Isolation Voltage
•
125 mA Load Current Rating
•
Fast Turn On Time -
•
Fast Turn Off Time - 35 ,.s
•
Solid State Reliability
•
Standard Plastic. DIP Package
•
Underwriters Lab Approval #52744
10,.s
DESCRIPTION
The IL-530 and IL-550 are optically
coupled isolators employing a gallium
arsenide infrared emitter and a silicon
photo darlington sensor. Switching
can be accomplished while maintaining a high degree of isolation
between driving and load circuits_
They can be used to replace reed and
mercury relays with advantages of
long life, high speed switching and
elimination of magnetic fields.
Gallium Arsenide LED (Drive Circuit)
Power Dissipation @ 25°C. __ ......... _...... _. . . . . . . . .. 90 mW
Derate Linearly from 55°C .............. _. _... _...... 1.2 mW/oC
......... 60 rnA
Continuous Forward Current ............. _
Peak Reverse Voltage. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 3 V
Photo Darlington Sensor (Load Circuit)
Power Dissipation @ 25°C
IL·530 .............................................. 210 mW
IL·555 .............................................. 210 mW
Derate Linearly from 25°C
IL·530 ............................................ 2.8 mW/oC
IL-555 ............................................ 2.8 mW/oC
Collector (Load) Current
IL·530 .............................................. 125 rnA
IL-555 .............................................. 125 rnA
Collector-Emitter Breakdown Voltage (BV CEO)
IL-530 ................................................. 30 V
IL-555 ................................................. 55 V
Collector-Base Breakdown Voltage (BV cso)
IL-530 ................................................. 30 V
IL-555 ................................................. 55 V
Emitter·Base Breakdown Voltage (BV ESO)
IL-530 .................................................. 8 V
IL·555 .................................................. 8 V
Package
Total Dissipation @ 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 250 mW
Derate Linearly from 25°C ........................... 3.3 mW/·C
Storage Temperature ........................... -55 to +150·C
Operating Temperature ......................... -50 to +100·C
Lead soldering Time @ 260·C ............................ 10 sec
Specifications subject to change without notice.
241
TYPICAL OPTO-ELECTRONIC
CHARACTERISTIC CURVES
Electrical Characteristics (@ 25°C Ambient)
Parameter
Min
GaAs Emitter
Forward Voltage
Reverse Current
Capacitance
Sensor
HI.
Typ
Max
Unit
1.25
0.01
50
1.5
10
V
p.A
pF
13K
BVCEO
IL-530
IL-555
BVCBO
IL-530
IL-555
EiVEBO
ICEO
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Coupled Characteristics
Current Transfer Ratio
30
55
V
V
Ic= 100 p.A
Ic= 100 p.A
30
55
V
V
V
nA
Ic= 10 p.A
Ic= 10 p.A
IE=1 p.A
VCE=10V
pf
pF
pI'
VCE=10V
VCB= 10 V
VEB=0.5 V
1.0
100
3.4
10
10
100
400
VCE(SAl)
0.9
Rise Time
Fall Time
10
35
FIGURE 1. GaAs EMITTER:
FORWARD CURRENT VOLTAGE
CHARACTERISTICS
IF=20 mA
VR=3.0 V
VR=O
VCE=5 V
IC=0.5mA
8
IF= 10 mA
VCE=5 V
Ic=50mA
IF=50 mA
~s
VCE=13.5V
IF=50 mA
~s
RL = 100 0
VDC t=1 Minute
0
pF
160
140
"...
g
120
I
I
I
I
~ 100
I
II
II:
II:
:::> 80
u
~ 60
"~
~
40
/
20
09
/
1.0
1.1
1.2
1.3
1.4
1.5
1.6
FORWARD VOLTAGE (VOLTS)
%
1.0
5000 7.000
Isolation Voltage
Isolation Resistance
Isolation Capacitance
T••t
Condition
10'2
0.5
V
FIGURE 2. DARLINGTON
TRANSISTOR OUTPUT
CURRENT VS VOLTAGE
.2 .4 .6 .S 1.01.21.41.6 1.S 2.0
VeE COLLECTOR VOLTAGE IV)
FIGURE 3. DARLINGTON
TRANSISTOR CURRENT
VSVOLTAGE
100
~ 90
.s....
zw
jl,=12mA
so
/
70
a:
a: 60
:>
t.> 50
a:
0 40
t.>
w 30
....
..J
..J
0
~
20
10
o
FIGURE 4. DARK
CURRENTVS
TEMPERATURE
I I I
IF = 10mA
1 1 1
[
11/I,=SmA
1/
IJ.I I I
1/
1/,11, -4mAf-
I
II, -6mA
,...
V JI
I I
.A l'I=~m~-
.1 '----'_--'-_...J...._-'----I
o 25
50
75
100 125
10 20 30 40 50 60 70 80 90
COLLECTOR VOLTAGE IV)
TEMPERATURE I'C)
242
litronix
H11AA1
A Siemens Company
ACINPUT
OPTO-ISOLATOR
Package Dimensions in Inches (mm)
340
~
1;;(93~)A1
'""0
240
"e '"
•
0-
"._101
16_601
260
-'------'
"'0
.l.lJ!l
(203)
oao
1~
E.:.!!l .o~~
280
(8.38)
r-
.
-=
[£".'"
.150
\l~r
I1
llEl.j
yo (10;~1
016.j\..
(,406)
(.5OS)
130
ll1Ql
-----r...
.100
j
0.0
~
(~~~)
(254)
TYP
~:
2
CATHOQEIANODI:
5
CO~LECTOR
'50
'"0
{~~~I..f~
(~~~I
(~
Q
15'
020
Maximum Ratings
Gallium Arsenide LED
Power Dissipation @ 25°C . . • . . . . . . . . . . . • .. 100 mW
Derate Linearly from 25°C . . • . . . . . . • . • . . 1.33 mWtC
Continuous Forward Current (RMS) . . . . . . . . . •.
60 mA
Detector (Silicon Phototransistor)
Power Dissipation @ 25°C . . . . . . . . . . . . . . . . . 300 mW
Derate Linearly From 25°C . . . . . . . . . • . . . • . 4.0 mWtC
Collector-Emitter Breakdown Voltage (BV CEO) .
. •. 30 V
Emitter-Base Breakdown Voltage IBVEBO) . . ..
. •.. 5 V
Collector-Base Breakdown Voltage IBVCBO) . . . . . . . . 70 V
FEATURES
•
•
•
•
1500 Volt Isolation Voltage
AC or Polarity Insensitive Input
High Current Transfer Ratio (20% min.)
Built·in Reverse Polarity Input
Protection
•
•
I/O compatible with integrated circuits
Underwriters Lab Approval #E52744
DESCRIPTION
The H11AA1 is a direct electrical and
mechanical replacement of the General
Electric series. This bi·directional input
optoisolator consists of two gallium
arsbnide infrared emitting diodes con·
nected in inverse parallel coupled to a
silicon NPN phototransistor in a 6 pin
dual in·line plastic package.
Package
Storage Temperature . . . . . , . . . . . . . . . . . -55 to +l50°C
Operating Temperature . . . . . . . • . . . • . . • -55 to +100°C
Lead Soldering Time @ 260°C . . . . . . . • . • . . . . 10.0 sec
Electrical Characteristics (25°C unless otherwise specified)
Parameter
Gallium Arsenide LED
Forward Voltage VF
Phototransistor Detector
BVCEO
BVEBO
BVCBO
'CEO
Coupled Characteristics
VCElset)
Min
30
5
70
DC Current Transfer Ratio
CTR
20
Symmetry
CTR@+10mA
CTR@-10mA
Input to Output
Isolation Voltage
0.33
Typ
Max
Unit
Test
Condition
1.2
1.5
V
'F=±10mA
50
9
90
5
100
V
V
V
nA
'c=10mA
'E= lOO I'A
'C=100I'A
VCE=10V
0.2
0.4
V
'F = ± 10mA
IC = 0.5mA
%
'F = ± 10 mA
VCE = 10 V
V
D.C.
80
1.0
1500 4000
3.0
Specifications subject to change without notice.
243
I
TYPICAL OPTO·ISOLATOR CHARACTERISTIC CURVES
FIGURE ,. INPUT
CHARACTERISTICS
FIGURE 2. TRANSFER
CHARACTERISTICS
_~
°
°
°
°
°
-
10
VCE"'lOVOL~
, IF'" lOrnA
~
,
E
,
is~ °
,
1
-2.0
.05
:i
1.0
_u
5
NORMALlZ£D TO
VeE ~ 10 VOLTS
.005
00
~ .0005
I
7
~
6
il
5
~
4
j
,
8
I
000,.2512510
~
g
IOm
,
..
~
FIGURE 5. DARK CURRENT
VS. TEMPERATURE
~
o
_~
I
I,
~'/
18 = 15;JA
1-
,1.;'-_.
-
_
....
10
,
i'
>-
NORMALIZED TO
VeE ~ 10 VOLTS
IF
=
lOrnA
~ ::-,
o
z
I
I
~ 10-
--II
V
0
10- 1
,/
10-1
-50 -25
1
U
~
IlJ,J
~~=-;;~~AI
((
:J
/
~ 10- 11
,I
>-
---/
""~A
-_..- f--- "IY
:J
ar - r -
'-
f--
10-
:J
a
50
I
<:
i
25
75
20~A
I
>-
/
:J
~
_~
/
.,
10
I.--
FIGURE 6. SYMMETRY
CH.ARACTERISTICS
-5
la- 6
~V~
o 1 2 3 4 5 6 7 8 9 10
COLLECTOR·EMITTER VOLTAGE - VCEO IV)
50100
INPUT CURRENT - IF (rnA)
'0
·--TIO'jA
-~
T'/
--
I
5
:J
I
1.0~AI
IF = a.SmA
~ 10
.§ 9
,
~ ,
V
il
-1='
j
i
S
°,
o
:il
, 1 \ I ll I I
~
,
LUU.1
~
>-
>-
-···IF = O.2mA
=,
FIGURE 4. OUTPUT
CHARACTERISTICS
-'
5
f-
II
IF'" 2.0mAI
V- i -
,J/i
2.0
FIGURE 3. OUTPUT VS.
INPUT CURRENT
°
.-•. I~
0.000
2
.01 05.1
,51
510 50100
COLLECTOR·EMITTE R VOLTAGE - V CE
INPUTVOLTAGE-V F IV)
I
'//
f-
.00
« .0005
~
t
-1.0
••• IF = S.OmA
J
,005
1
-'-
"-~-
I--IF '" lOrnA
r-
u
-
-6
.5
:J
-
~I'-oom~1
·---1, • 'OmA
5 NORMALIZED TO
I
>-
"~
100
CASE TEMPERATURE lOG)
3
10-. 01
II
05.1
.5 1
510
50 100
COLLECTOR-EMITTER VOLTAGE - VeE (Vf
244
litronix
IL·250
A Siemens Company
BIDIRECTIONAL INPUT
OPTO·ISOLATOR
Package Dimensions In Inches (mml
3<'
~
r::~
Q
(660)
'"'
.
-r-.
070
.J.......!
~
I
080
IV
I-
04sQrrr--r._
~ lU!J.j I,,38)
yo
fjj '"
~
;----t=" 1361 1
U'~
_.
-
(1~~)
016--1..
iH1:
,>0
100
I
(254)
1.508)
'20
Maximum Ratings
~,
.. 1tO
2
CATItOOEI.lNOOf
4
EMITTER
,~
~~)
'"'
OOB
{76ZI
(203)...f~
.Q
TYP
~
15'
Gallium Arsenide LED
Power Dissipation @ 25°C ...
Derate Linearly from 25°C ..
· 200 mW
2.6mW/"C
· 100 mA
· •. 3.0 V
Continuous Forward Current .
Peak Inverse Voltage . . . . . . . . . . .
Detector (Silicon Phototransistor)
Power Dissipation @ 25°C . . . . • . • . . . . • . . . .. 200 mW
Derate Linearly From 25°C . . . . . . . . . . . . . • • 2.6 mW/"C
Collector-Emitter Breakdown Voltage (BVCEO) . . . . • • 30 V
Emitter-Base Breakdown Voltage (BVECO) . . .
. .•• 5 V
Collector-Base Breakdown Voltage (BVCBO) . .
. "
70 V
FEATURES
• AC or Polarity Insensitive Input
• 5000 Volt Breakdown Voltage
• High Current-Transfer-Ratio
(>50% min_I
•
•
Industry Standard Dual-In-Line
Built-in Reverse Polarity
Input Protection
•
Underwriters Lab Approval #E52744
DESCRIPTION
The IL250 is a bidirectional input optoisolator. It consists of two gallium arsenide
infrared emitting diodes coupled to a
silicon NPN phototransistor in a 6 pin
dual in-line plastic package.
Package
Total Package Dissipation at 25°C Ambient
(LED Plus Detector) . . . . • . . . . • . . • • • . • . •. 250 mW
Derate Linearly From 25°C . . . . • . . • . • • . • • . 3.3 mW/"C
Storage Temperature . . . . . . . . . . . . . • . .• -55 to +150°C
Operating Temperature . . . . . • . • . • • . . • . -55 to +100°C
Lead Soldering Time @ 260°C . • • . • . . . •.•.•.•• 10 sec
Electrical Characteristics (25°C unless otherwise specified I
Parameter
Gallium Arsenide LED
Forward Voltage V F
Phototransistor Detector
HFE
BVCEO
BVECO
BVCBO
ICEO
Coupled Characteristics
VCE(set)
Min
Typ_
Max
Unit
Test
Condition
1.2
1.5
V
IF = ± 10 mA
100
200
30
7
70
50
10
90
5
50
V
V
V
nA
0.4
V
IF=±16mA
Ic=2 mA
%
IF = ± 10 mA
VCE = 10 V
V
D.C.
DC Current Transfer Ratio (CTR)
50
150
Symmetry
CTR@+10mA
CTR'@-10mA
Input to Output
Isolation Voltage
245
0.33
5000
1.0
VCE =5V
IC = 100l'A
IC=l mA
IC=lOOI'A
IC=10I'A
VCE = 10 V
3.0
I
TYPICAL OPTO-ISOLATOR CHARACTERISTIC CURVES
FIGURE 1. INPUT
CHARACTERISTICS
FIGURE 2. TRANSFER
CHARACTE RISTICS
-~ '2 NORMALIZED TO: foc-:.IF SOmA
./
.-.I~ ~ 20mA
ffi~ , ~~ ~J~lOLTS~
IF-10rnA
a::
.5
• IF. 5.OmA
'"
~;-'"
60
0&
1
40
0
0
0
i3~
.1
.05
F=illL~:r:~f-;"~.~2~.0~m~A
5
.01
~=t1~If~:t::::j::j:::'t;"f'O~.5m'+j'A
~
.005
.001
.0005
~
<
-6
-2.0 -1.0
1.0
//
,
~ ,
" .05
~ ,
o
9
7
V
::>
5
NORMALIZED TO:
-10VOLTS
iil
!:::!
Vee
, 11
'~" ,
o
_~
,
f-
~
15
!Z
J
1/
~
/
25
2
3
4
5
6
7
8
9 10
10
,
NORMALIZED TO:
Vee -
10 VOLTS
IF'" lOrnA
,l.ll1J
~~-;;;;;;'A'
/
H,1
VI
N
:;
~
10-1, /
-50
1
a'"
S,a-,
V
0
11
'J:' jA
'j ..t
FIGURE 6. SYMMETRY
CHARACTE RISTICS
1/
9
2O$IA
COLLECTOR-EMITTER VOLTAGE - VCEO {VI
FIGURE 5. DARK CURRENT
VS. TEMPERATURE
8
II
IB-'~A
,
I III
7
:1..1
..l-+-
18
211
INPUT CURRENT - IF (rnA)
•
I---:~""A
3
,000. 1 .2 .512510 50100
'0-•
50100
IL
4
,, ,
",="o,ml
.00
.0005
510
lLl-t-
5
f-
.0
.005
.51
f/
8
5
:;i
y 1-1 1 1
FIGURE 4. OUTPUT
CHARACTERISTICS
10
5
,
IA
COLLECTOR·EMITTER VOLTAGE - VeE (VI
FIGURE 3. OUTPUT VS.
INPUT CURRENT
_§
•••• IF - O.1mA
.01 .05.1
Z
•• _1 F .. O.2mA
r-
~ .000'
2.0
INPUT VOLTAGE - V F (V)
---IF'" tOmA
0
25
50
CASE TEMPERATURE
75
~
100
(~C)
3
10-. 01
II
,05 .1
.6 1
5 10
50 100
COLLECTOR·EMITTER VOLTAGE - VeE {VI
246
litronix
A Siemens Company
CNY 18 SERIES
SINGLE CHANNEL
PHOTOTRANSISTOR OPTO"ISOLATOR
Package Dimensions in Inches (mm)
11~
.018
(/J (0,45)
\
L." ~,--=~ ~ .:f.
(14,51112,5)
0.1
(5,2)(4,9)
'(2,54t
Frame
e connected to case
Maximum Ratings
Emitter IGaAs infrared emitting diode)
Reverse voltage
Forward current
VR
IF
Surge current (tS 10 !-Ls)
I,.
pt ..
Power dissipation
60
3
1.5
1 100
It
100
32
1 150
1
Detector (81 phototransistor)
Collector-emitter reverse voltage
VCEO
Collector current
Ic
Power dissipation
Ptot
~A
mW
Coupler
Storage temperature
Operating temperature
T1tor
Soldering temperature in a 2 mm distance from
the case bottom US3 sl
isolation voltage
T.mb
-55 to +126
-55 to +100
DC
°C
r.
230
DC
(between emitter and detector referred to
FEATURES
•
TO-72 Metal Case Package
•
Current Transfer Ratio, 4 Groups
cCNY 18-2, 16 to 32%
CNV 18-3, 25 to 50%
CNV 18-4, 40 to 80%
CNV 18-5,63 to 125%
DESCRIPTION
The optically coupled isolator CNV 18 uses
as emitter a GaAs infrared emitting diode
which is optically coupled with a silicon
planar phototransistor acting as detector.
The component is incorporated in an
18 A DIN 41876 (TO-72) case. The collector of the phototra~sistor is electrically
connected to the metal case.
The coupling device is suitable for signal
transmission between two electrically separated circuits. The potential difference
between the circuits to be coupled is not
allowed to exceed the maximum permissible insulating voltage.
standard climate 23/50 DIN 50014;
\ 2.0V). CMRV (0) is the maximum
tolerable common mode voltage to assure that the output will remain in a logic
(0) state (V out < O.6vl.
7. DC Current Transfer Ratio is defined as the ratio of the output collector current
to the forward bias input current times 100%.
8. At 10 mA VF decreases with increasing temperature at the rate of 1.6mV/"C.
0
250
+5V
PULSE
Chan A
GENERATOR
Zo o50n
tR "" 5ns
Chan B
I >-=OO-{j[}--+------+--~.
INPUT
I,"
MONITORING
NODE
~~-------f~~~+5V
OUTPUT YOU!
MON I TOR I N G
NOOE
47n
~--~::::::==----------4
• C L is approximately 15p F, which includes
probe and stray wiring capacitance.
----- 350m V {lin'" 7.5mM
:,~PUT
J---------\----------ItpdtOlro--
~1
e~~PUT
175mV II" °3.75mAI
ChanA~
lr-Vout(q
------'t pd (l ) 1 -
bd~_-_:._::~_::_::----15V
-- ---------Voo,'OI
Test Circuit for
tpd
(o1 and
tpd
-
--I I--- to (0) = 70ns (~:1~9ii~ ~~u~~
Chan B
I-- to
(1) "" 70ns (delay in response to logic 1 input)
Response Delay Between nL Gates.
(1).
INPUT Ve
MONITORING NODE
I
+5V
PULSE
GENERATOR
Zo
0
tR ==
son
.OlpF
5ns
BYPASS
OUTPUT You,
~t5>-m--t------:--:-t~ MONITOR ING
CL
NODE
'C L is approximately 15pF, which includes
probe and stray wiring capacitance.
INPUT
VE
J----- - -\-. --~--~~:~~
I
I
,
--.. I te (O) 1-----
eo~~PU~!
''''':.,----
- ..lt e (l)1.-----
________
Jc_:oo~:15V
L:::.:.:.:.d.-- ---------~----Vo,,'OI
Test Circuit for te (0) and tE (1).
• 1000,------,-==:-:::::-r-------,
uo.
CMAV (0)
-"D>{!}--t--------.--o +
o
>
o
VOU!
m--~-t---~
w
o
z
o:;;
:;;
:;;
8
Frequency MHz
Typical Common Mode Rejection Characteristics/Circuit
251
~
10 ' - - - - - - - - - - - - - - T,,:25°C
,
...z
15--------------~J,,
VF
-
INPUT DIODE FORWARD VOLTAGE - VOLTS
Input Diode Forward Characteristic
Figure 1
TRUTH TABLE (Positive Logic)
Input"
Enable
Output
1
1
o
o
1
1
0
o
0
off
off
·See definition of terms for
logic state.
6
>,
"..
w
~ 4
g
...
3
:::>
2
ir...
0
J
Vcc"S.OV
AL"ttotO LoadsTA " 25°C
5
1
0
0
)...
..,
"
.,.~
Hysteresis
1
2
4
3
5
1m - INPUT DIODE FORWARD CURRENT - mA
Input-Output Characteristics
Figure 2
252
6
litronix
IL·101
A Siemens Company
HIGH SPEED
THREE STATE
OPTO·ISOLATOR
Package Dimensions linches/mml
PIN NO.
Ne
ANODE
CATHODE
Ne
GROUND
Vo
GATE
V,,
I
Absolute Maximum Ratings
FEATURES
• High Speed - 100 n-sec typo prop.
delay
• Faraday Shielded Photodetector for
Improved Common Mode Rejection
• DTL/TTL Compatible -5V supply
• Three State Output Logic for Multiplexing
• Built-in Schmitt Trigger to Avoid
Oscillation
• Underwriters Lab Approval #E52744
DESCRIPTION
IL-101 is an optically coupled pair employing a Gallium Arsenide Phosphide LED
and a silicon monolithic integrated circuit
including a photodetector. High speed
digital information can be transmitted
by the device while maintaining a high
degree of electrical isolation between
input and output. The IL-1 01 can be
used to replace pulse transformers in
many digital interface applications. A
built-in Schmitt Trigger provides hysteresis to reduce the possibility of oscillation.
Storage Temperature.
Operating Temperature.
Lead Solder Temperature.
-55°~ to +12S:C
... 0 Cto+70 C
2600 C for' a Sec.
Input Diode
Forward DC Current
Reverse Voltage.
Output - Ie
lOrnA
......... 5V
Supply Voltage - Vee
.. 7V
5.5V
(Not to exceed Vee by more than 500 mV)
Output Collector Current - Ie .........
.. 100 rnA
Output Collector Power Dissipation
.. 100 mW
Output Collector Voltage· VOUT ...
. ...... 7V
Isolation Voltage (Input-Output) - DC
...... 1500V
Enable Input Voltage - Ve
Electrical Characteristics
Over Recommended Temperature (TA = O°C - 70°CI
Test
Parameter
Min. TVp. Max. Units Conditions Fig. Note
lin (1): Logic (l) Input
Current to Ensure
Logic (0) Output
rnA
lin (O): Logic (O) Input
Current to Ensure
Logic (1) Output
250 IlA
VG (1): Logic (1) Gate
Voltage
2.0
V
VG (0): Logic (0) Gate
Voltage
.8
V
Vout (0): Logic (0)
Output Voltage
.35
.6
V Vee" 5.5V,
VG" 2.4V,
lin = 5 mA,
lout (Sinking) '"
16rnA
18 22 rnA Vee" 5.5V
ICC
VG" 0.5V
lin =0.10 mA
Specifications subject to change without notice.
253
Switching Characteristics at TA = 25°, lice = 5V
Parameter
Min. Typ. Max. Units
Test
Conditions
tpd (1): Propagation
Delay Time to
Logical (1) Level
100
200
5
='N p"U'T
NODE
~'>n2~".,~.rl-.
EZ~ t~~~~ss
~\
4"'"
c, r
I
GND'
RL OUTPUTVo",
MONITORING
i,;;
"C L is approximately 15pF, which includes
tpd (0):
J !-----------\---:
probe and stray wiring capacitance.
100
200
'NPUT
I,"
ns RL = 350n,
CL=15pF,
lin = 7.5 rnA
tR-tF: Output Rise-fall
Time (10·90%1
t~
MON'T~fIlNG
ns RL = 350n,
CL = 15pF,
lin = 7.5 rnA
Propagation
Delay Time to
Logical (0) Level
IG~~~~~gR~[jr--;v~"JD.,~--4
+5V
Fig. Note
15
--Itpd{OIt--
~1
e~~PUT
RL = 350n,
CL =15pF,
lIn'" 7.5 rnA
350mV 11;0' 7.5mAI
(I,n - 3.75mAJ
-----175mV
---'tPd( l r
!~Voul(1)
~::-:,-:::::----1.5V
- - - - - - - - - - V01J\(O)
Test Circuit for lpdlO) and tpcl(1).
Fig. 1
Electrical Characteristics-Input-Output at TA = 25°C
Test
Symbol Min. Typ. Max. Units Conditions
Parameter
Insulation Vol·
tage (InputOutput I
BV,.()
1500
V
Resistance (In·
n V1_0 = 500V
put·Qutput)R,.Q
1012
Capacitance
(Input-OutpU1)
C,-0
0.5 0.8 pF f = 1MHz
Fig.
Note
TRUTH TABLE (Positive Logic)
Input·
Enable
o
1
o
0
o
o
= 25°C
Test
Parameter
Symbol Min. Typ. Max. Units Conditions
Forward
Voltage
VF
1.2 1.5 1.75 V lin = 10mA
Reverse Break·
down Voltage VBR
V IR = lO~A
Capacitance
Cin
10
pF V= 0,
f= lMHz
off
off
·See definition of terms for
logic state.
Electrical Characteristics-Input Diode at TA
Output
Fig. Note
Operating Procedures and Definitions
Logic Convention. The IL-10l is defined in terms of positive logic.
Bypassing. A ceramic capacitor ('OlpF min.) should be connected from
pin 8 to pin 5. Its purpose is to stabilize the operation of the switching
amplifier. Failure to provide the bypassing may impair the switching
properties.
Polarities. All voltages are referenced to network ground (pin 5). Current
flowing toward a terminal is considered positive.
Gate Input. No external pull-up required for a logic (11.
NOTES:
1. The tpd(l) propagation delay is measured from the 3.75 mA point on the trailing
edge of the input pulse to the 1 .5V point on the trailing edge of the output pulse.
2. The tpd(O) propagation delay is measured from the 3.75 mA point on the input
pulse to the 1.5V point on the leading edge of the output pulse.
3. Pms 2 and 3 shorted together, and pins 5, 6, 7, and a shorted together.
4, At 10 mA VF decreases with increaSing temperature at the rate of 1.SmV/cC.
254
NODE
litronix
IL·CT6
A Siemens Company
DUAL PHOTOTRANSISTOR
OPTO·ISOLATOR
Package Dimensions in Inches (mm)
.040
~
.130
@lQ)
.050
.r-:-k-"">--.,....,.-rtl-i"~OI31::)O
.020
Ii -----cr.~
(.762)
'
.030
18.39) 11.32)-111--
ITJ..1l li.22)
.3~30
.052,
TVP.
I
.100 .008
1254
)idW
-JL
m2
mi.
..j h~~
_
1_
FEATURES
.130
~ d~
.150
300
17.m62)
0
~
Pin Configuration
• Two Isolated Channels Per Package
• 1500V Isolation
• 50% Typical Current Transfer Ratio
• 1 nA Typical Leakage Current
• Direct Replacement For MCT6
• Underwriter Lab Approval #E52744
DESCRIPTION
The IL-CTS is a two channel opto isolator
for high density applications_ Each channel
consists of an optically coupled pair employing a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. ,Signal information, including a DC level, can be transmitted by the device while maintaining a
high degree of electrical isolation between
input and output. The I L-CTS is
especially designed for driving medium-speed
logic, where it may be used to eliminate
troublesome ground loop and noise problems.
It can also be used to replace relays and
transformers in many digital interface applications, as well as analog applications such
as CRT modulation.
LED CHIPS ON PINS 2 AND 3
PT CHIPS ON PINS 6 AND 7
PIN NO.
4
5
6
FUNCTION
ANODE
CATHOOE
CATHODE
ANODE
EMITTER
COLLECTOR
COLLECTOR
EMITTER
255
--------------------------------------~
. . ~--
I
MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature .......................................... -55'C to +150'C
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. -55'C to +100'C
Lead Temperature (Soldering, 10 seconds) .................................... 260'C
Input Diode (each channel)
Rated Forward Current, DC .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 rnA
Peak Forward Current (l/ls pulse, 300 pps) ..................................... 3 A
Power Dissipation at 2SoC Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Derate Linearly From 25'C .......................................... 1.3 mW/'C
Output Transistor (each channel)
Power Dissipation @ 25'C Ambient ....................................... 150 mW
Derate Linearly From 25'C ............. _ .............................. '2 mWtC
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 rnA
Coupled
Input to Output Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1500 Volts DC
Total Package Power Dissipation @ 25'C Ambient ............................. 400 mW
Derate Linearly From 25'C ......................................... 5.33 mWtC
EL ECTRO·OPTICAL CHARACTERISTICS
Parameter
Min
Input Diode
Rated Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
3.0
Output Transistor
Breakdown Voltage,
Collector to Emitter
Emitter to Collector
Leakage Current,
Collector to Emitter
Capacitance Collector to
Emitter
30
7.0
Coupled
DC Current Transfer Ratio
(leIlF)
Saturation Voltage Collector to Emitter
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Breakdown Voltage Channel·to-Channel
Capacitance Between
Channels
Bandwidth
20
(25'C Free Air Temperature Unless Otherwise Specified)
Typ
Max
Units
1.25
5.0
0.001
100
1.50
V
V
/lA
pF
I F =20mA
IR = 10/lA
V R = 3.0 V
V F = OV
V
V
nA
Ie = 1.0 mA
Ie = 100/lA
VeE = 10V
8.0
pF
VeE = OV
50
%
VeE = 10V,I F = 10 rnA
V
Ie = 2.0 rnA, IF = 16 rnA
65
10
1.0
10
100
0.40
1500
2500
10"
0.5
1500
VDC
n
pF
V
0.4
pF
150
KHz
Test Conditions
t = 1 Minute
V,.o =SOD V
f= 1.0 MHz
Relative Humidity
= 40%
f = 1.0 MHz
Ie
= 2.0 mA, Vee = 10V
RL = lOOn
Switching Times, Output Transistor
Non-Saturated Rise Time,
Fall Time
Non-Saturated RiSe Time,
Fall Time
Saturated Turn-On Time
(From 5.0 V to 0,8 VI
Saturated Turn-Off Time
(From Saturation to 2.0VI
= 2.0 rnA, VeE = 10V
2.4
/lS
Ie
15
/lS
Ie
5.0
/ls
= 2.0 rnA, VeE = 10V
RL = 1.0 Kn
RL = 2.0 kn, IF = 15 rnA
25
/lS
RL
RL =100n
Specifications subject to change without notice.
256
= 2,0 Kn, IF = 15 rnA
TYPICAL OPTO-ELECTRONIC CHARACTERISTIC
CURVES FOR EACH CHANNEL
FIGURE 1.I-V CURVE
OF PHOTOTRANSISTOR
1
.!;!
50
eTR
~
50%
e
40
I
50
,...
I-
30
«
""«
a
20
I-
~
10
I.
If
1.0
~1
I--
.7
40
.5
+
I,
10 rnA
.1
a
"
10
20
30
40
50
1.4
III
110
~~
gl-
ffi
100
50
I
-rA~5'
90
V
70
NW
"«
««
50
,-
"'''/
]: I.
W
";::
'Z"
z
~
~
14
12
'l
N
a
1.0
if
10-$
~
~
10,6 r-Vce '" 70V
"~"
10-9
:\
...J
10-10
100
LED
Vee .. 1riV
10
B
~yCE"50V
10. 8
TA ,. +l00·C
20 30 40 50 60 70 80 90 100
AMBIENT TEMPERATURE - T,. JOCI
=3-
I II
-L
Va; • lOY
r
-
I'L.
'it
_
I,
PULSE
OUTPUT
Rl "l00n
RL = loon
CIRCUtT WiD TO OBTAIN 11111CHINO
11M1! va COLLICTOR CURRINT I'LOT
10
COLLECTOR CURRENT - Ie (rnA)
257
100
f;'
10
RL =- 1 Kn
10
FORWARD CURRENT - IF (mAl
FIGURE 6. LEAKAGE
CURRENT VS TEMPERATURE
VS COLLECTOR VOLTAGE
FORWARD CURRENT - IF (mAl
FIGURE 7. SWITCHING
TIME VS COLLECTOR
CURRENT
20
20 I---~~~~~~~~
«
«
V
-,,- ]z'v.
0 20 40 60 80 100
AMBIENT TEMPERATURE (OC)
,.
,-
CIRCUIT
30
40 20
40 I----~~~~
«
I-
TA - -ss'C
"I,,«
0«
w«
10
1-----+----+-......,
ffi eo
FIGURE 5. I-V CURVE OF
LED VS TEMPERATURE
130
~~
~Q
5
100
i
FORWARD CURRENT - IF (mAl
FIGURE 4. CURRENT
TRANSFER RATIO vs
TEMPERATURE
I-
1
~ ~ I--~~~-~~~~~
20'\
<
r---"--""---,
120
a
Ii'
1
COLLECTOR VOLTAGE - VeE (V)
~
\.J~
~
WOAST CASE DESIGN fOR eTR
o
140
t
~ :'\S~~{,.
.3 t-~
~
.2
2Q
l
-.
~ 1\
ii
" .,•
.4
FIGURE 3.CTR VS
FORWARD CURRENT
~
II
::
.. l-
~
.J- f--f--
l-
I-
ffi
«
FIGURE 2. I-V CURVE
IN SATURATION
I
litronix
ILD·506
A Siemens Company
DUAL PHOTOTRANSISTOR OPTO·ISOLATOR
Package Dimensions in Inches (mm)
FEATURES
• Two Isolated Channels Per
Package
•
5000 V Isolation
•
50% Typical Current
Transfer Ratio
•
1 nA Typical Leakage Current
•
Replacement for MCT6
•
Underwriters Lab Approval #E52744
DESCRIPTION
The IL-506 is a two-channel optoisolator for high density applications.
Each channel consists of an optically
coupled pair employing a gallium
arsenide infared LED and a silicon
NPN phototransistor. Signal
information, including a DC level, can
be transmitted by the device while
maintaining a high degree of electrical
isolation between input and output.
The IL-506 is especially designed for
driving medium-speed logic, where it
may be used to eliminate troublesome
ground loop and noise problems. It
can also be used to replace relays and
transformers in many digital interface
applications, as well as analog
applications such as CRT modulation.
LED CHIPS ON PINS 2 AND 3
PT CHIPS ON PINS 6 AND 7
PIN NO.
1
2
3
4
5
6
7
8
FUNCTION
ANODE
CATHODE
CATHODE
ANODE
EMITTER
COLLECTOR
COLLECTOR
EMITTER
Specifications subject to change without notice.
258
Maximum Ratings
Maximum Temperatures
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. -55 'C to + 150 'C
Operating Temperature ....................................................... -55'C to +100'C
Lead Temperature (Soldering, 10 seconds) ................................................. 260'C
Input Diode (Each Channel)
Rated Forward Current, DC . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 60 rnA
Peak Forward Current (11's pulse, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 3 A
Power Dissipation @ 25'C Ambient ..................................................... 100 mW
Derate Linearly from 25'C ............................................................ 1.3 mW/'C
Output Transistor (Each Channel)
Power Dissipation @ 25'C Ambient ..................................................... 150 mW
Derate Linearly from 25 'C ....................................................•........ 2 mW/'C
Collector Current ...................................................................... 30 rnA
Coupled
Input·to·Output Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5000 VDC
Total Package Power Dissipation @ 25'C Ambient ........................................ 400 mW
Derate Linearly from 25'C ........... '" ............................................ 5.33 mW/'C
Electro·Optical Characteristics (@ 25'C Free Air Temperature Unless Otherwise Specified)
Parameter
Input Diode
Rated Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
Min
3.0
Output Transistor
Breakdown Voltage,
Collector·to·Emitter
Emitter·to·Collector
Leakage Current,
Collector·to·Emitter
Capacitance,
Collector·to·Emitter
30
7.0
Typ
Max
Bandwidth
Switching Times, Output Transistor
Non·Saturated Rise Time,
Fall Time
Non·Saturated Rise Time,
Fall Time
Saturated Turn·On Time
(From 5.0 V to 0.8 V)
Saturated Turn·Off Time
(From Saturation to 2.0 V)
Test Conditions
V
V
I'A
pF
IF =20 rnA
IR = 1O I'A
VR =3.0V
VF=OV
V
V
Ic= 1.0 rnA
IE = 1OO I'A
nA
VcE =10V
8.0
pF
VCE = 0 V
50
%
VCE = 10 V, IF = 10 rnA
V
VDC
Il
pF
Ic=2.0 rnA, IF=16 rnA
t = 1 Minute
V1•o =500 V
f=1.0MHz
2500
0.4
VDC
pF
150
kHz
t = 1 Minute
f = 1.0 MHz
le=2.0 rnA, Vce=10 V
RL = 100 Il
2.4
I'S
15
I's
5.0
I's
RL = 2.0 kll, IF = 15 rnA
25
I's
RL = 2.0 kll, IF = 15 rnA
1.25
5.0
0.001
100
1.50
10
50
10
1.0
Coupled
DC Current Transfer Ratio
20
(lclIF)
Saturation Voltage Collector·to·Emitter
Isolation Voltage
5000
Isolation Resistance
Isolation Capacitance
Breakdown Voltage Channel·to·Channel
Capacitance Between Channels
Units
100
0.40
0.25
7000
1012
0.5
Specifications subject to change without notice.
259
Ic = 2.0 rnA, VeE = 10 V
RL =1001l
Ie = 2.0 rnA, VCE = 10 V
RL=1.0 kll
I
TYPICAL OPTO·ELECTRONIC CHARACTERISTIC
CURVES FOR EACH CHANNEL
FIGURE 1. I·V CURVE
OF PHOTOTRANSISTOR
1
'"
50
~ 140
'"V
sci-r---
40
lI
sb+-
a'i
30
"
20
'"0
I-
~
10
~
0
>=
~
40
,'.-[/
•
II
.'"
~O
~
~
z
~
20
lI-
IF '" 10 rnA
I I
0
V
10
20
30
WORST CASE DESIGN
40
50
130 I:'""T""T''''HI'''G'''H''''C'''UR'''R'''E'''N'''T-''
TRANSFER RATIO
14
~
.;
"lV,",
70
~~
.9
~~
III I
1.3
1.2
90
50
50
IF
100
(rnA)
~
120
100
60
SO
40
20
1.0
"
V
Til.'"
J1/,
-5S~C
THtCh
l--
100
FIGURE 6. LEAKAGE
CURRENT VS TEMPERATURE
VS COLLECTOR VOLTAGE
VeE '" 70V~..L
~,VCE
V
r1
50V .......... 'D
I-
=~cE~25V~
10'7 VeE '" 10~..t"
~
10'8
I
....
"
TA"'+100C
I--'
10
FORWARD CURRENT - IF (rnA)
FIGURE 5. I-V CURVE OF
LED VS TEMPERATURE
I-
0'"
:10'
erR
FORWARD CURRENT -
FIGURE 4. CURRENT
TRANSFER RATIO VS
TEMPERATURE
w'"
~~
~OR
10
COLLECTOR VOLTAGE - VeE (V)
ffi~
~2
FIGURE 3. CTR VS
FORWARO CURRENT
eTA = 50%
I-
~
v
FIGURE 2. I-V CURVE
IN SATURATION
V
(IRCU'T
~ 10- 9
"-}'"
::. 1010
.oJ
40
20
0
20 40
60
80 100
AMBIENT TEMPERATURE ("C)
10
FIGURE 7. SWITCHING
TIME VS COLLECTOR
CURRENT
20
18
14
12
Vee = lOV
-~
"
10
>=
z
i
l'
~
20
Re'·,' Kll
30 40
50 60
70
80
90 100
AMBIENT TEMPERATURE ,-- Til. I C)
CIRCUIT USED TO OBTAIN SWITCHING
TIME VS COLLECTOR CURRENT PLOT
..
"I.
I 'NJ.
I III
IS
100
FORWARD CURRENT - IF (rnA)
PULSE
I N PUT
47"
>-""'V'---.
Vee
..,
I
~
Rl "'-loon
Ie
= 10V
DETECTOR
.J
iil
PULSE
OUTPUT
10
COLLECTOR CURRENT - Ie (rnA)
RL
260
= 100"
litmnix
SFH 900
A Siemens Company
MINIATURE LIGHT REFLECTION
EMITTER/SENSOR
PRELIMINARY
Package Dimensions In Inches (mm)
,020
48°
f>42'
(.0.5)
iOll...l
016 . I
(0.6)
1,
.024
TOAi,
.016
~
-
T
.047
(1.2)
(~iJ
-l
lQjJ .059
(0.3) 1!.2l
.012 (1.1)
043
.014
_IL@1l
~'(.25)
.563
.010
(l±d)
(13.3)
.524
I
047
t
(l1)
(0.9)
1-;=;__·0_3..,5=
.087 MAX
.075 (2.2)
~
(1.6)
.063
.087
(2.2)
iT9i
.075
1 EMITTER ANOOE
2. EMITTER CATHOOE/
DETECTOR EMITTER
3. DETECTOR COLLECTOR
Maximum Ratings
FEATURES
• IR Emitter and NPN
Phototranslstor Detector
•
High Sensitivity
•
Designed for Short Distances
Up to 5 mm
DESCRIPTION
The SFH 900 is a reflex light barrier for
short distances, operating in the
infrared range, which includes a GaAs
IRED as transmitter and an NPN
phototransistor with a high
photosensitivity as receiver. Both
components are manufactured in
modern strip·line technique and are
mounted side-by-side in a plastic
package. A daylight filter screens
against undesired light effects.
The miniature reflex light barrier is
designed for applications in industrial
and entertainment electronics, e.g., as
position reporting device and end
position switch, for speed monitoring
or in general, as a feeler element in
various types of motion transmitters.
Emlttar (OIAs Infrarad Diode)
Reverse Voltage (VA) .
Forward Current (IF) .
Surge Current (iFS), t = 10 P.s .
Power Dissipation (Ptot), Tam b=40°C .
Detector (Silicon Phototranalstor)
Collector·Emltter Voltage (VCEO) .
Emitter-Base Voltage (VEBO) .
Collector Current (Jee) .
Power Dissipation (Ptot) .
Package
Storage Temperature (T stor) .
Operating Temperature (T amb) .
Junction Temperature (TJ) .
Soldering Temperature (T s)
2 mm From Case Bottom, t < 3s ...
Power Dissipation.
Characteristics (Tamb
. 6V
..... 60mA
1.5A
100mW
30V
7V
lOrnA
100 mW
-40 to +100°C
-40 to + 100°C
100°C
. 260°C
150mW
=25 ·C)
Emitter (GaAs Infrared Diode)
Forward Voltage (VF), 'F =60 mA .
Breakdown Voltage (VBR) .'
Reverse Current (IA), VA = 3 V .
Capacitance (CO)
(VR=OV; 1=1 MHz).
Thermal Resistance (RthJL) .
Detector (Silicon Photo'ranslstor)
Capacitance (VCE = 5 V; f = 1 MHz)
CCE·
................... .
Cce·
CEe······ ......... .
Thermal Resistance (RthJU .
Package
Collector· Emitter Leakage Current ('CEO)
(VCE=10V) .
Photo Current (Ip)
2
(VCE=5 V; EE=0.5 mW/cm .
1.25«1.65) V
.. 30(>6)V
.01 «10),A
40 pF
. ............ 450 K/W
11 pF
15 pF
16 pF
....... 750 K/W
20«200)nA
Specifications subject to change without notice.
261
<3mA
RELATIVE SPECTRAL EMISSION
OF EMITTER AND DETECTOR
Irel ; Srel = 1(>-)
D
COUPLING FACTOR
H 17
%
100
\
90
REFLECTOR WITH 90% REFLECTION
"'"'~ ~"U"'"'.,
80
70
60
50
40
iF=10 rnA; d=tmm: VCE=5 V iCE>O.5 rnA
1\
\
\
\
1\
\
30
20
~
............
10
5 mm
---_. d
MAXIMUM PERMISSIBLE
FORWARD CURRENT
IF = I(T)
PHOTOCURRENTINDEPENDENT
ON SPACING OF MEDIUMS
Ip=l(d)
%
100
mA
V 1\
90
/
80
II
Irel
Srel
70
100
\
80
60
1\
50
40
60
\
I
II
30
40
II
EMITTER
1/ II
700
800
f\
[\
AMjLrlER
20
10
1'\
900
,
1\
1100
\
.,
1000
f\
20
1\
50
1200 nm
262
1\
1,\
100°C
INFRARED EMITTERS
Package
Type
TO-18
Dome
Glass Lens
Package Outline
Part Number
~
:
Half Anglo
Radiant
Intensity
le(mW/sr)Typ
CQY17-4
10-20
CQY17-5
15-30
SFH401-1
15°
@(mA)
265
f--
6.3-12.5
SFH401-2
10-20
SFH401-3
16-32
Pago
267
f--
TO-18
Round
Glass Lens
I!J)
:
CQY77-1
8-16
CQY77-2
12.5-25
CQY77-3
SFH400-1
6°
269
20-40
f--
12.5-25
SFH400-2
20-40
SFH400-3
32-84
271
f--
TO-18
Flat
Glass Lens
=:::t!)
CQY78-1
1.0-2.0
CQY78-2
1.6-3.2
CQY78-3
SFH402-1
40°
100
2.5-5.0
273
f--
1.6-3.2
SFH402-2
2.5-5.0
SFH402-3
4.0-8.0
L0242-1
2.5-5.0
275
f-Modified
TO-18
Glass Lens
T1l1.
5mm
Plastic
Tl
3mm
Plastic
:
[]
:Jl )
ID
L0242-2
60°
LD242-3
25°
LD271A
SFH409
263
281
10-15
LD271
LD271H
4.0-8.0
6.3-12.5
>16
100
277
100
279
>7
30°
>5
I
INFRARED EMITTERS
Package
Type
Package Outline
W
TO-46
Flat Plastic
Package
~
0
TO-46
0
Oval Plastic
Package
~
=
Part Numbe,
SFH404
Half Angle
60°
Radiant
Intensity
le(mW/sr) Typ
output rad.
power
approx.
@(mAI
Page
80
283
100
285
100
287
50
289
100jlW
SFH407-1
0.4-0.8
SFH407-2
.63-1.25
SFH407-3
1.0-2.0
LD273
25°
IRL-60
25°
30
CJ
Miniature
Axial Lead
Miniature
Radial
Lead1mm
Pkg. Width
0
o~
~
A
~
A
Total
external
radiated
power
>400mW
SFH405-1
SFH405-2
SFH405-3
16°
1.0-2.0
1.6-3.2
291
2.5-5.0
SFH405-4
4.0-8.0
LD261-4
2.0-4.0
50
Miniature
Radial
Lead 2mm
Pkg. Width
LD261-5
2 Diode Array
LD262
3
LD263
4
5
6
7
8
9
10
mm
30°
LD261-6
3.2-6.3
5.0-10
293
LD264
LD265
LD266
LD267
LD268
LD269
LD260
264
30°
2.5-8.0
50
litronix
cay 17 SERIES
A Siemens Company
INFRARED EMITTER
§,
Package Dimensions In Inches (mm)
~)t~"-~'~,!
'ii
o
!
........o
z
P======1lL1-~~
~~
~~
.20.t93
~15.2114.91
0.25
~
.511.492
J:
"'.51112.51-
u.
15.41
.224
en
Anodaoncm
j
15,71
~
1
Maximum Ratings
Reverse voltage
Surge current (t
IF
4
100
;FS
2000
Tj
100
-5510+100
180
°c
°C
600
180
KIW
K/W
VR
Forward current
~
10 J,ls)
Junction temperature
Storage temperature
Power dissipation (TclI &4I
Thermal resistance
Junction to air
::
T$1:or
Ptot
65°C)
RUYamb
R
_
thJ
Junction to case
FEATURES
• TO-18 Size Hermetic Package
• Dome Glass lens
• Narrow Beam, 15°
• High Power, Up to 6.3 mW Typical
rnA
rnA
mW
Characteristics (Tomb = 25°C)
J..~.k
Wavelength at peak emission at Imill
• Premium Hi-Rei Device
• long Term Stability
V
Spectral bandwidth at 50% from Imax
Switching times (Ie from 10% to 90%; IF == 100 rnA)
Capacitance at VR = 0 V
Forward voltage (IF = 100 mAl
Breakdown voltage (fR =100 ~AI
Reverse current (VR = 3 VI
Temperature coefficient of Ie or /fie
Temperature coefficient of VI'
Temperature coefficient of Apeak
Half angle
AA
±20
tr; tf
1
50
Co
VF
VBR
om
om
960
"spF
1,7)
4)
1,35(~
30(~
0,01 (.10)
-0,65
-1,5
IR
TC
TC
TC
..p
V
V
"A
0,3
%/K
mV/K
nm/K
15
degrees
Radiant Power
DESCRIPTION
The GaAs infrared emitting diode Cay 17
is designed to emit radiation at a wavelength in the near infrared. The radiation
emitted is excited by current flowing in
forward direction and can be modulated.
The case 1BA 2 DI N 41 B76 (similar to
TO 18) is closed by a glass lens. The
cathode terminal is marked by the adjacent
projection on the rim of the case bottom.
The anode is electrically connected to the
case. From IF = 100 mA heat sinks have to
be used.
Type
Cay 17-4
Group
4>.@1.{J=15°
CaY 17-5
"', (Total)
4>.@I.{J= 15°
"',,(Total)
Min
Typ
Max
Unit
Test Condition
1,1
2,8
1,8
4,5
mW
mW
mW
mW
l00mA
lOOmA
lOOmA
lOOmA
6,3
rodlClboncOIleQSQfunchonollhehalfnnglej'
265
I
Radiation characteristic I,.,
R..... nt flull (radiant power) 01>.
IIIW In a cone wlthOfl"'So; Q'.,5 o =fllf)
=< ,
(.,J
6
0
'f :
\
EO
50
0
\
0
,
III
[I
910
~(l
1000
101,()
101l0nm
-J.
Ma., pennl..lbla forward current
'F'"f(T)
mA
m'
11
I,
1 1
Rtlx, . ~ til K/~ \
t
\
1\
Nt • • = OOK/W
J
1\
r\
1\
1111
1\
l\
1 1 1 1
1 1 1 1
40
ZO
I~
tOO°e
60
8B
-I
Ji
10.1
0,8
~O
I.l
1.4 1.6
Ul 1.0 12
--',
Forward voltag_ ~ '" f (T.",~ I
U. V
Radiant intanaity ~ = f !T""b )
pf
'4
14
60 rTlT1flfIrTITIIT1Ir--n'ITlIflC"TTTTm
"
~1.2
1
~or~
LC
H+-H+-H+-H++
""'1·"'::
0.8
H++-I++++++
0.8
0.6
H++++++++
0.6
0.4
H++++++t-++-I
0.4
01
H++--+++--+++--++-H
0.2
J1l+ttttIIHttttIIHttttIIH~
20
H+tllIIi-I+Htlli-1rtHiffill-l-Hlllll
"
u'
u'
~3{J-ro-1O
0 10 20 30 40
~
1111
...
...
/'-
940
920
Parmi.slble pul•• handling: capability
IF'" f 11);" = parameter, To ••• = 61) C
. I~~11111
>-
!·1.
02
>-
9"
I
900
15
50
moll
75
1O"}
IOcoe
"'~mh
266
j
1O.~
I
-30-21)-110 K1ZO:Il40SO&0708090KlO
- - I...
08B'~
I
930-
I
-
ijJl
,
l"
,
"'
960-
950 •
-
,
00 70 eo 90 100 °e
'--
A
,
F'
10-3
10- 2
to-1
_I
100s
0(
litronix
SFH 401 SERIES
A Siemens Company
INFRARED EMITTER
Package Dimensions in Inches (mm)
RADIATION EMITTING AREA D.15
I
0.018
~
(ODA5)
!
.204
.
(5.2)
9
L..
.571
. _ (145)
(12.5)
492
'r-
DA)
~41i ~ (~l~1
(ig j ~
---I.25~.
-0
x 0.15 (004 x
(4S)
.181
(SA)
(5.7)
fi'·
.
I' il.~1' I
CATHODE
35~
1-(5
.211
.224
Maximum Ratings
Reverse Voltage (VA) ................................ 4 V
Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 300 mA
Surge Current (i Fs), TS 1 /Ls . . . . . . . . . . . . . . . . . . . . . . . . . .. 5 A
Junction Temperature (T]) ......................... 100·C
Storage Temperature Range (T.) ........... -55 to +100·C
Power Dissipation (Ptot) . . . . . . . . . . . . . . . . . . . . . . . .. 470 mW
Thermal Resistance
Junction·to·Air (RthJamb) . . . . . . . . . . . . . . . . . . . . . .. 450 K/W
Junction·to-Case (RthJG ) ....................... 160 KfW
FEATURES
•
Characteristics (Tamb = 25 "e)
TO·18 Hermetic Package
•
Dome Glass Lens
•
•
Narrow Beam, 15"
Three High Power Intensity Ranges
SFH 401·1, 6.3 to 12.5 mW
SFH 401·2, 10 to 20 mW
SFH 401·3, 16 to 32 mW
DESCRIPTION
The SFH 401 GaAs infrared emitting
diode is designed to emit radiation at
a wavelength in the near infrared. The
radiation emitted is excited by current
flowing in forward direction and can
be modulated. The case 18A 2
DIN41876 (similar to TO·18) is closed
by a glass lens. The anode terminal is
marked by the adjacent projection on
the rim of the case bottom. The
cathode is electrically connected to
the case. From IF 100 mA heat sinks
have to be used.
=
Wavelength at Peak Emission (@ Imax ), ""oak' ....... 950 nm
Spectral Bandwidth (@ 50% of Imax ), <1A •.••.•••. " ±20 nm
Half-Angle (Limits for 50%
of Radiant Intensity (I.), 'P . . . . . . . . . . . . . . . . . . . . . 15 Degrees
Switching Times (I. from 10% to 90%;
IF = 100 mAl, tr;tf • • • • • • • • • . . • • • • • • • • • • • • • • • • • • • • • .• 1 /LS
Capacitance (V A = 0 V), Co . . . . . . . . . . . . . . . . . . . . . . . .. 40 pF
Forward Voltage (V F)
(I F =100 mAl ............................. 1.35 (s1.7) V
(IF=1 A) .................................. 1.9(s2.3)V
Breakdown Voltage (IA = 100 /LA, VSA ............. 30 (~4) V
Reverse Current (VA = 3 V), IA ................ 0.01 (s 10) "A
Temperature Coefficient of (I. or 4>.), TC . . . . . . . .. -0.55 %/K
Temperature Coefficient of (VF), TC . . . . . . . . . . . .. -1.5 mV/K
Temperature Coefficient of ("".ak), TC . . . . . . . . . . . .. 0.3 nm/K
The diodes are grouped according to their radiant intensity I.
at IF = 100 mA in axial direction.
Group
Radiant Intensity I.
4>. (Total) typo
II
1
6.3 to 12.5
2.5
III
1111
I
/10 to 20 /16 to 32 / mW/sr
/10
/4
Jmw
Specifications subject to change without notice.
267
I
.,
RADIANT INTENSITY
RELATIVE' SPECTRAL EMISSION
'00
sr-
t '·-Hf~
f-~- ~70
f-_.I
.
.. t--
0
-
40
10
-ell
t--
--
o ':BIll
j'\-
':--
920
..
'rr'
12
t--~ t--r
t-
~'Lt-
-t-- fc-f--
I,
--,!-
-
1102
I
V
1--1 t--f'/
t-
I
?-10'
I I
10"'
960
1000
1040
1080nm
50
100
150
200
~8
250 rnA
~I,
-A
\0
\1
1,8
',4 \6
lP 1,1
1,4V
~VF
FORWARD VOLTAGE
MAXIMUM PERMISSIBLE
FORWARD CURRENT IF E I(Ta)
RADIATION CHARACTERISTICS
Irel ·!(....,
=f(V F)
10'
~
--
_.
lit--
~t~
\
ot10
1'6
t-- -
IF
mA
t-- f-,
I,
80
60
,-----
20
~
I", !O
FORWARD CURRENT
~"'f(Tamb)
mW
I,el- f (>.)
~=f(Tamb)
mA
350
I I' : n l
I
I
If 300
\
1250
,
VF
VF25
1
'j
I
1
[\-+-- tit
100
o
o
20
40
eo
60
0.1
100
302010 0 10 20 3D 40 !il 0070BO 90100 a[
O(
--Tamb
-76
CAPACITANCE
RADIANT INTENSITY
'e=f(IF)
C-f(VR)
pF
50
'.4
C
1
40
I
I
1"--
f-~j
0,8
0,6
f-t+
f--j
I
PERMISSIBLE PULSE LOAD
IF = t(r);
I
I
!
:
"-
J{)
10
:
-
t--
l
I
Hi-I+
j
J
N.
:
',0
0.4
IN.I
1\1
I
N-I \
I
I ~
50
1.1
0,6
1\ I I
~t--~
I
1
\\1 ,\N-R'hJG = 450 C/W
!
',4
0.8
\
,
150
I
1\
I i
I k---R'hJG - 160 CI w
1
200
1
I
1
I
I
J,
i
l
'J
i"
0,4
ji 1
1-
10 '
,
t-
0,1
,
1
1
-30 -20 -K! 0 10 20
l)
i
"
1
,
I II
40 50 60 70 80 90 100
--Tamb
268
O(
-T
litronix
CQY 77 SERIES
A Siemens Company
INFRARED EMITTER
Package Dimensions In Inches (mm)
Maximum Ratings
V.
I,
I,.
Reverse voltage
Forward current
Surge current It ~ 10 "01
Junction temperature
Storage temperature
Power dissipation (Tene
FEATURES
• Premium Hi· Rei Devica
• TO·18 Size Hermetic Package
• Long Term Stability
• Round Gless Lens
• Very Narrow Beam, 6°
• High Power, Up to 6.3 mW Typical
• Very High Intensity, Up to 40 mW/sr
Ti
Toto,
= 4O"C)
Plot
Thermal resistance
Junction to air
Junction to case
Characteristics (Tomb
=25°C)
Wavelength at peak emission at lmlx
Spectral bandwidth at 50% of 1mB•
Switching times
II. from 10% to 90%;1,· 100 mAl
Cepocitonoo IV. - 0 VI
Forward voltage (I, • 100 mAl
Breakdown voltage (I. =100 "AI
The GaAs infrared emitting diode CaY 77
emits radiation at a wavelength in the near
infrared range. The radiation emitted is
excited by current flowing in forward direc·
tion and can be modulated. The case 18 A
2 DIN 41876 (similar to TO 18) is closed
by a glass lens. The cathode terminal is
marked by the adjacent projection on the
rim of the case bottom. The anode is elec·
trically connected to the case. From IF =
100 mA heat sinks have to be used.
K/W
.....
950
±20
nm
nm
•
6
degree
tritf
1
40
1.35 IS 1.71
301' 41
0,011' 101
-0.55
-1.5
0.3
"0
pF
V
V
"A
%/K
mV/K
nm/K
Ma.
Unit
Tilt Condition
16
mW/sr
l00mA
l00mA
l00mA
l00mA
l00mA
l00mA
Co
V,
Va.
I.TC
TC
TC
Temperature coefficient of A.peak
rnA
500
180
111.
Half angle
(limits for 50% of radiant intensity Ie)
V
A
'C
'C
mW
RthJc...
RthJemb
Reverse currant (VR = 3 V)
Temperature coefficient of Ie or 4'.
Temperature coefficient of VF
DESCRIPTION
4
230
4
100
-5510+100
350
K/W
Radiant Intansity & Power
Type
Group
COY 77-1
Intensity I.
4I.ITotoll
COY 77-2
Intensity I.
Min
8
Intensity I.
41. (Totoll
mW
2.5
12.5
25
mW/sr
40
mW/sr
4.0
41. (Totoll
COY 77-3
Typ
20
6.3
mW
mW
. Specifications are subject to chOange without notic8.
269
I
..
...................... 1... -'(1.1
"
1110
...dletlonohli,............ ·'C.J
.....ntl........,I... "',1
r-'
50
0
'f:
III
:\
I
10
,/
/
\
II",
50
V"
V
0
1\
3D
II
/
I
0
0
III
~
920
1&0
IIIlJ
mID
~"
_ ...
!.>-
./
V
'//
V
50
--A
• ................ to...nt'....-t
••
:~mi
-
L 220
1\
'zoo
I
V.
liD
,110
00
...r_
1\
't-r
1110
10'
,500kIW
1\
10
"
I'
eo
-
'0
20
~
20
40
_
1~_m
-I8OK/W
\
120
..
ForjIw_ntvon... I,_,(V,!
1,.'(71
2'0
~O
100
-I,
60
80
-T
110
.< o.e':-':IO':-'-12-':-c'-I':-:'\I:-:'II:--:2Jl':-c21::--:'/J,V
lie
-~
c.p.a..... C·'(~1
I'
I'
r.ru
i:;.or~12
1 I»
I»
~
c
I"
"
1II
I'.
0.&
II
•
I
H-+++++-t-H+H-i
0.&
H-+++++-t-H+Pf.d
a, H++-+++-+++-+++-l
.
o-311-20-11
.'
d
. W."...............k.m .......
om ....... ·,{T_I
0
I)
--
2D lD 1,0
OJ
so fiO'JOlI90 OJ
H-+++++-t-H+H-i
-:11-20-. D IJ ZOJ) e.G 5060 1080
CI(
-~
'
11100,--,,--,r-1r-1r-1-'-'-,
....."'0-
1
910 -
.--
970 - - , --, '-'-'r--'I-~;;;"L!.
9io~-v
....-
~~~~~+-+-+-+-+-~
9<0
IO°u.
~+-++--,-+-t-l
:t::'
""
910G
I
u
,t--'-r---,-
--
l'I.'-~-
9,tU:..1.- "']L.lJ_
o
IS
50
75
1IO't
m·' UJ_-U1I1LUlJJILlJJJllLUJIIII
II"'
270
.,.,
Col
1)-' 10,1
--I
D's
!II) OJ
oc
litronix
SFH 400 SERIES
A Siemens Company
INFRARED EMITTER
Physical Dimensions In Inches (mm)
RADIATION EMmlNG AREA 0.15 x -ll.15 (0.4 x 0.4)
(~oo:~)
~
~
_ J'~I!:WI--r
0.10
"
(2.~)
.204
l~:~l
.571
. .295
i .193
1----(14.5)--,--(751-1
(1:9~)
(~iJ
Maximum Ratings
Reverse Voltage (VRl ........................................ 4 V
Forward Current (IF) . . . . . . . • . . . . . .. . . . . . . . . . . . . . • . . . . . . .. 300 mA
Surge Current (iFSl. "s 1 lIB .............. " . .. .. • .. • .. .. .. .... 5 A
Junction Temperature (T~ ................................. l00'C
Storage Temperature (Tal.. .. .... .. . .. .. .. . .. ..... - 55 to + l00'C
Power Dissipation (Ptot). TG = 25 'C . . . . . . . . .. . . . .. . . . . . . . .. 470 mW
Thermal Resistance:
Junction to Air (RthJambl.............................. 450 KIW
Junction to Case (RthJGl . . . . . . . . . . . • . . . .. . . . . . . .. . . • . .. 150 KIW
FEATURES
• TO·18 Hermetic Package
• Round Glass Lens
• Very Narrow Beam, 8°
• Three Very High Power
Intensity Ranges
SFH 400·1, 12.5 to 25 mW
SFH 40()'2, 20 to 40 mW
SFH 40().3, 32 to 64 mW
DESCRIPTION
The SFH·4OO GaAs Infrared emitting
diode emits radiation at a wavelength
in the near Infrared range. The
radiation emitted Is excited by current
flowing In forward direction and can
be modulated. The case 18 A 2 DIN
41876 (similar to TO·18) Is closed by a
glass lens. The anode terminal is
marked by the adjacent projection on
the rim of the case bottom. The
cathode Is electrically connected to
the case. From IF = 100 mA heat sinks
have to be used.
Characteristics (Tamb = 25 ·C)
Wavelength at Peak Emission (~k). at Imax . . . . . . . . . . .. 950:t 15 nm
Spectral Bandwidth at 50% (6X). of Imax . . . . . • . . . . . . . . . . . .. :t 20 nm
Half Angle (Limits for 50%
of Radiantlntensity lei. (,.) ............................ 6 Degrees
Switching Times (I. from 10%
to 90%; IF = 1000 mAl. (t,;t,) ................................ 1 lIB
Capacitance (Co). VR = 0 V . . . . . . . . . . . . . . . • . . . .. . . . . . . . . . .. 40 pF
Forward Voltage (V F)
IF=I00 mA ...................................... 1.35(sl.7)V
IF=IA ............................... , ........... 1.9(s2.3)V
Breakdown Voltage(VBRl.IR= l00pA ..................... 3O(;z:4)V
Reverse Current (11ll
VR=3V ......................................... 0.01 (slO)pA
Temperature Coefficient of
I. or +. (TC) ..................................... " - 0.55 %/K
Temperature Coefficient of VF (TC) • . . . . . . . . . . ... . . . . . .. -1.5 mViK
Temperature Coefficient of /\peak (TC) '.' ... ; . : . • . . . • . • • • . .. 0.3 nm/K
:,;
The diodes are grouped according to ..thelr radiant Intensity
I. = at IF = 100 rnA In axial direction.
Qrou
Radiant Intensity I.
• (Total) typo
Specifications subject to change without notice.
271
mW/sr
rnW
I
%
RELATIVE SPECTRAL EMISSION
I.&I=I(A)
100 ",-,-,7U-'-'
10'
/
V
40
35
60
30
\0
25
'0
20
30
15
~
10
/
960
1000 1040
---A
o
L
1080nm
/
If
1,0
/
/
/
10
9]0
rnA
50
I, 45
o
eao
FORWARD CURRENT
IF=I(VF)
RADIANT INTENSITY
'.-f(IFl
rnW
F
/
..-
., ..-
10'
I I
10·'
o
50
II
I
'0'
It....
RADIATION CHARACTERISTICS
2
150 iliA
~8
\0
\1
',4 \6
1,8
1~
-V,
~
If,V
FORWARD VOLTAGE
MAXIMUM PERMISSIBLE
FORWARD CURRENT IF -I(TO)
~5
·'(lamb)
rnA
1,4
~,,-,-,.-,-~,,-.~
~
IF 300 ~'-'~-+-+-t-t~-
1250 1--"-,----'.----'-+-+-,-----1
VF21i 1.1
1
1.0
0,8
0,6
0.4
H++-K*t-I-'II----1
50
0.1
30 10 10 0 10 10 30 40 SO 61170 III 90100 'C
- - T...
-To
'F=f(T);
pF
\0
_.l
1-:-
I
I.
I
r-.
___ T10-'
10' 5
-ffilttltt-t:-HtHtII
'
iii'
~'llj!'\.
r r
1.4
-i:;bZW~1.Z
1
1.0
O.B
r1r.' " j n ,_ '
102
10'
tOO
-v,
272
T
I
till'
·~i'IT'. t
o
-1(T.mbl
t+t+tttll-t-t+t+tillk-i-Htmil
. i,"....· :.
I I,
I
10
~
~ ~T+-rH-ftltlt--+I+tt++tll!
,
I,
30
RADIANT INTENSITY
CAPACITANCE
C-f(V,.)
PERMISSIBLE PULSE LOAD
0.6
0.4
-
Ol
10' V
t:±
-30 -10 -10 0 10 10 30 40 50 60 70 80 90 100 'C
_ 7...
CQY 78 SERIES
litronix
A Siemens Company
INFRARED EMITTING DIODE
...c
ClI
.;;;
Package Dimensions in Inches (mm)
Q)
c
:=
Q)
Z
...
0
018
(0045)
...
~
0
=
N
~
:t:
u.
C/)
~
L
571
(14.5)
(125)
492
'(3
Q)
D-
C/)
Maximum Ratings
Junction temperature
V.
IF
iFs
Tj
Storage temperature
Tltor
Power dissipation (Tca.. = 4O"C)
P,ot
Reverse voltage
Forward current
Surge current (t:iii 10 ~s)
4
230
4
100
-55 to +100
350
V
mA
A
·C
·C
mW
Thermal resistance
Junction to air
RthJlmb
Junction to case
K/W
RthJene
500
180
A_
AA
950
±20
nm
nm
40
degree
K/W
FEATURES
Characteristics (Tomb = 2SoC)
•
•
•
•
•
•
Premium Hi-Rei Device
TO-18 Size Hermetic Package
Long Term Stability
Flat Glass Lens
Wide Beam, 40°
High Power, Up to 6_3 mW Typical
Wavetength at peek emission at lmex
Spectral bandwidth at 50% of Imlx
Half sng&a
(limits for 50% of radiant intensity I.)
Switching times
II. from 10% to 90%; IF : 100 mAl
t,.;ff
Capacitance (VR = 0 VJ
1
Co
40
Breakdown voltage (IR = 100 IlA)
II<
Va.
Reverse current (VR
I.
1.35 (~ 1.7)
30(.41
0.01 (~10)
-0.55
-1.5
0.3
Forward voltage (IF: 100 mAl
= 3 VI
Temperature coefficient of Ie or (I_
TC
TC
TC
Temperature coefficient of VF
Temperature coefficient of ~
""pF
V
V
"A
%,IK
mV/K
nm/K
DESCRIPTION
The GaAs infrared emitting diode Cay 78
is designed to emit radiation at a wavelength
in the near infrared range. The radiation
emitted is excited by current flowing in
forward direction and can be modulated.
The case similar to TO 18, is equipped with
a flat light window. The cathode is marked
by the adjacent projection on the rim of
the case bottom. The anode is electrically
connected to the case. From IF = 100 mA
heat sinks have to be used.
Radiant Intensity & Power
Type
Group
Min
Cay 78·1
Intensity I.
1.0
<1>. (Total)
Cay 78·2
Intensity I.
Cay 78·3
! Intensity 1.
Max
Unit
Test Condition
2.0
mW/sr
3.2
mW/sr
5.0
mW/sr
lOOmA
loomA
l00mA
loomA
loomA
l00mA
mW
2.5
1.6
<1>. (Tolal)
<1>. (Total)
Typ
4.0
2.5
6.3
mW
mW
Specifications are subject to change without notice.
273
I
.1nhre ........1........... 1..... '1M
%
160
90
If:
3')1
/
\
I
60
/
!
50
40
1II
I
10
I'
~
o
1BI
920
960
,
/
1\
3lJ
.;)'
1L k"
k':: V
011 1140 .1180 ..
-A
V
.,/
ISO ••
III
SO
-IF
MtI .. penn...1ttIe torw.rd curtHt
••
"nnrdV~"I''''IV'1
I,·'m
:t
240
220
ILLl
If
1:
~
1\
160
140
120
l!
100
,
10'
,SOOIUW
\
.0
"
60
40
,""
10
20
1\
~
60
10
-I
40
IX!
.' L.LLLL...L.Lc':-c':-:L-:'
D.8 lD 12 ,4 III III 2JJ 22 v.,
°e
-~
. . . .rdvotlll..
C81JM"'1tOII C" I 1",,1
If
~
• IITo .. t I
,4
50
,
1
i:n.or~L2
I
r-
40
3D
I"
1II
Q'
,
.,
10
D.'
H++-++I-t+-lH-t-I-1
0.6
t+++++-H-1-1H-t-H
0.6
H-t-H-t-H-t-t-i-t''kI
D.2
H-t+t+H-H-H-H
01
I-++-I++-+-H++-+-H
»
o
i~
-110KIW
o
-
-3lJ-1II-11 0 DlII3lJ 40 50 1II111111!111lO 'C
w.........................
....
-
-JJ-20-IJO Il20JJt,()fIl60708Il9JOJ
"'nn. puIM ......... 08pe"'llty
l'1li A,..... liT_I
A IF'" III;"· pwwneter; 100.1 "4O"C
1000
lD'~I~II~.H.
A."atBO
1:
...... r--
960
950
940
~ ....
V
930
920
9'0
900
o
IS
50
-
7S
....
rI.
1lO'C
274
....
II(
litronix
SFH 402 SERIES
A Siemens Company
INFRARED EMITIER
Package Dimensions In Inches (mm)
RADIATION EMITTING AREA
(l2i~1~5)
J'016~X
.01610.40xO.40)
.
-t++.
.-.
all'l
.187
14.m
.
l4.6T
570
.212
112.5)
.492
(5lll
.197
0.1
12.54)
"-
CATHODE
.181
~
.210
Maximum Ratings
Reverse Voltage (V R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4 V
Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 300 mA
Surge Current (i FS)' TS 1,.s . . . . . . . . . . . . . . . . . . . . . . . . . .. 5 A
Junction Temperature (T,) . . . . . . . . . . . . . . . . . . . . . . . .. 100·C
StorageTemperatureT.) .................. -55to +100·C
Power Dissipation (PIOI)
(Tamb=25·C) ................................. 470 mW
Thermal Resistance
Junction·to-Air (AthJamb) ....................... 450 CIW
Junction-to-Case (AthJG) ....................... 160 CIW
FEATURES
Characteristics (T8mb = 25°C)
•
T()'18 Hermetic Package
•
•
Flat Gla.. Lens
Wide Beam, 40°
Wavelength at Peak Emission (@ Imax), >.p.ak ........ 950 nm
Spectral Bandwidth (@ 50% of Imax ), A}. ••• '. • • • • • •• :1:20 nm
l
Half-Angle (Limits for 50%
of Radiant Intensity I.), .), TC . . . . . . . .. -0.55 %/K
Temperature Coefficient of (VF), TC . . . . . . . . . . . .. -1.5 mV/K
Temperature Coefficient of (>.p.ek), TC . . . . . . . . . . . .. 0.3 nmlK
• Three Intensity Ranges
SFH 402·1, 1.8 to 3.2 mW
SFH 402·2, 2.5 to 5.0 mW
SFH 402·3, 4.0 to 8.0 mW
DESCRIPTION
The SFH 402 GaAs Infrared emitting
diode Is designed to emit radiation at
a wavelength In the near Infrared
range. The radiation emitted Is excited
by current flowing In forward direction
and can be moduled. The case similar
to T()'18 Is equipped with a flat light
window. The anode Is marked by the
adjacent projection on the rim of the
case bottom. The cathode Is
electrically connected to the case.
From IF = 100 mA heat sinks have to
be used.
The diodes are grouped according to their radiant intensity I.
at If = 100 mA in axial direction.
Group
II
Radiant Intensity I.
+. (Total) typo
1.6103.212.5105 1 4108
14
16.3
10
III
1111
1
Imw/sr
ImW
Specifications subject to change without notice.
275
---- - - - - - - - -
I
RADIATION
CHARACTERISTICS
1,0,=1(;<»
I'~
RADIANT INTENSITY
RELATIVE SPECTRAL
EMISSION 1,0' 1(>.)
=
10 = I(I F)
100
20
/
10°
00
0
2oo
30"
311'
40"
411'
50"
50"
60"
60"
70"
70"
",
1//
~~_~
_ _L - J ____ L--
so
100
150 mA
80"
80"
90"
90"
~/,
MAXIMUM PERMISSIBLE
FORWARD CURENT
FORWARD CURRENT
PERMISSIBLE PULSE
LOAD IF = I(T)
=
rnA IF I(TG)
350 r-T-,--rT--r,-r-.-,--,
IF
mA
104
0=
0,005
I,
JM
0,01
0,020=f
•I
=I(VF)
mA
10'
IF
r
.
/
10'
50
H-+-+-+-NO-+-+\I--<
I I
20
80
4IJ
100 O(
~r
CAPACITANCE
~v,
RADIANT INTENSITY
I.
FORWARD VOLTAGE
VF
VF25 =f(Tamb)
C=I(V R)
pf
1,4
50
1;;25
1.4
v,
30
10
I'
i
i
r::
J
i '\
~tt', I i-ttltiffiI--Il'I+,H11JI
I'
1
'!
~ '\
Ii
10
1
II" I'
-, Ii
!
I
1
'
I '
, II lili
0,8
I
i I i i!
!
---v.
w' v
I
I '
,
l'
:
f-+-+-1++-+-+-H--H-H
I
0,8
f-+-H-++-+-H---l-l--f--H
0,6
0,4
f-+-+-H--+-1-l-+-+-+-l-H
0,4
0.1
f-+-+-H--H---l--l-+-+-l--l--'
0.1
II I I I
10"
I
i
N
0,6
I
II
= I(Tamb)
276
ff)
70 00 90 100 DC
,
!
,
i
i
I
30 20 10 0 10 20 30 40 50
,
I
-30-20
I
,
I
-~
i
I
I
I
0 10 20 lll,(J 50 60 70 SO 90 100°C
litronix
LD 271 SERIES
A Siemens Company
INFRARED EMITTING DIODE
Package Dimensions
.02610.651
.02010.51
Cathode
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
Reverse voltage
Forward current
Surge current It:5 10 !lS)
Junction temperature
Storage temperature
FEATURES
• Low Cost
• T-1% Package
• Lightly Diffused Gray Plastic Lens
• Long Term Stability,
• Medium Wide 8eam, 25 0
• Very High Power, 16 mW Typical
• High Intensity, 16 mW/sr
DESCRIPTION
The GaAs infrared emitting diode LD 271
is designed to emit radiation at a wavelength in the near infrared range. The radiation emitted is excited by current flowing
in forward direction and can be modulated.
LD 271 is enclosed in a dark plastic package
of 5 mm diameter. It is preferably provided for I R remote control of color TV
receivers.
V.
Power dissipation (T..... "" 40°C)
T.tor
P.~
4
130
2.5
100
-5510 + 100
210
Thermal resistance
Junction to air
RlIlJ.mb
350
K/W
J.
Apeak
950
±20
nm
nm
I,
151> 101
>16
>7
mW/sr
¢.
16
mW
~
25
degree
t,;tf
1
40
1.351"'1.7)
301<:41
0.011"'101
-0.55
-1.5
+0.3
[,
iFS
T;
V
mA
A
°C
°C
mW
Characteristics (T.mb = 250 C)
Wavelength of radiation at Imu
Spectral bandwidth at 50% of 1m••
Radiant intensity in axial direction
IF = 100 rnA for half angle 'P '" 30°
L0271
L0271H
L0271A
Radiant flux tPe (IF '" 100 rnA)
total (typ.)
Half angle
(limits for 50% of radiant intensity I.)
Switching times
14>, from 10% 1090%; /, = 100 mAl
Capacitance at VA :c 0 V
Forward voltage (/f= 100mA)
Breakdown voltage (I A= 100 tJ. A)
Reverse current (VA :c: 3 V)
Temperature coefficient of I. or!fl.
Temperature coefficient of Vf
Temp.rature coefficient of Ape ••
Half·life of radiant intensity
Co
V,
V..
I.
TC
TC
TC
Specifications are subject to change without notice.
277
~s
pF
V
V
~A
%/K
mV/K
nm/K
I
..
1"
I 1\
70
I~,)
20'
I. 18
I
80
Radiation charactariltic I,., '"
20
r
I re l 90
i
Radiant intanlity I. = I~ I ,)
.,. for q " 30°
Retatlv. lPRI,alemlMion 1r.. fUI
100
14
I
60
12
50
10
40'
1\
0
I:·
I
III
II I
50'
.
6"
70'
I
o
IIIIl
910
960
1000 IO'D
-A
80'
90' Lc::t3."".~:::t::::L--.J,.,
1090nm
50
100
150
200
-I,
Max. parmiuibla forward currant
mA ""'fiT."",)
250mA
lm'D'
200
1,180
i
I
I ..
140
120
100
I
10'
"
80
60
",
40
1,\
20
1'\
10"
J
0.8 1.0
1.2 1.4 1.6 1B 2.0 2.2 2.4 V
-~
Forward volta"a ~= II T."",)
V".O
Capacitanca C ~ f( VIII
,F
'.,
511
I !I
ii'
C
I
III
,
'Ii
I
r NJI
1
40
)0
11I1
~I
,
10
,
,
i
,
'
Illi
I
Iii !'\l
1 !i III
, I
" I
[
14
rr,--",-"-,-,,-,-,,
14
1.2
H++-t++-t++-t-i-TI
1:zs.or ~'11
0,8
H+-H4+iH-+iH-+i
1
1
0.4
i' Ii
.'
0.1
I'
11:1 !
IDe
H+t++++t-++++
H+t++++t-++++
I
0.4
,
,
I
U
01
-30-20-10 0 IOlO304QrilOO7000901OO DC
-30·ZO-() [} Kl101l405060708090100
--lamb
--~
mW Radiant Inten.!ty l" =fl,)
sr(J··100mAl
Parm. put.. capability
Wavelen"th at paak aml..lon
1...... fIT.....1
A
I
I,
r- r- r-
Y
960
"0
....-/
....-~
I
V
~5
," 0 5
,
I
0,5
!
910
211
-,
29
30
900
31°
'1-~1
.00U
910
27
Tastgrad D '" Parameter
i
9)0
26
~~ :f2~~C;
lD'lrl~II±'mll±!llEBI\
+mI=t D.fH rJ,
002
1
940
25
O(
-lomb
1000
-- -
10
o
10'
10'
1••• 0
0.6
!il--4
,
--h.... .. II T.mb}
0.8
I.
: !;
i
I
! i~
; II'
*
;r,;:
I
Radiant Intanllty
o
15
50
15
-r...
278
100 0t
10'
LIWJlllILllllilllLJ,""LWWUCliW~"
10 5
10 4
10 3
10 2
10'
~T
10°
10' s
litronix
SFH·409
A Siemens Company
INFRARED EMITTER
ADVANCED INFORMATION
Package Dimensions In Inches (mm)
.026
.13
(3.3)
(.65)
(31)
(~
114~.146
I
(i'>29)
(~D
r(35)
_
(02.7)7
.106
18
~
r
018 (46)
(045)
(0.3)
.012
t
,
.-.
0~5
.033
1M!
T
.252
: +
ir}.
.59
(15) .65
(m)(16.5)
I
I~I)
iOi~
III
(~)"'I+.02
.268
'r-T
(i .15)
(0]5)
.138
CATHODE
.09
(2.3)
FEATURES
•
3 mm (T1) Size Package
•
1110" (2.3 mm) Lead Spacing
•
Low Cost
•
Matches with SFH·309
Phototransmltter
DESCRIPTION
The new infrared emitting diode
(GaAs·IRED) SFH-409 is available as a
low cost component in the usual 3 mm
plastic case.
This component was conceived for
preferred use in simple IR light
barriers and for remote control
applications in entertainment
electronics and the, toy industry.
Characteristics
Radiant Intensity In the Axial Direction
(IF=100 rnA)
I.
Aperture Cone (Half·Angle)
. 1T0tail
LO 242-2
Intensity I.
Intensity Ie
.ITolall
Ma.
5.0
Unit
mW/sr
B.O
mW/sr
12.5
mW/sr
6
4.0
6.3
16
Test Condition
mW
10
.ITotall
LD 242-3
Typ
2.5
mW
mW
Specifications are subject to change without notice.
281
l00mA
l00mA
l00mA
l00mA
l00mA
100mA
I
Rele'l:lv. spectral em Inion I••, "" t{A)
"10
I(
Irel90
i·
/. 1\
I
0
so
.
-
I
-1_
40
I~
0
10
i
10
8!lI
I
I
30'
40'
,/
I "
50'
1/
60'
70'
BO' H~~"R!'''''';;?;;:..;z.
//
I
920
960
1000 1040
-A
90' H-+~"!js;.,;~I!ii!S-+-·H '0'
II
o
1080nm
so
lOoo
'100
r-r-,-,-,-,-,-,,-,,
lOO
I-H-+-.++++-+-H
200
100°
250 mA
.. IF
Forw.rd yolt.". f F = f( V.)
Max. parminlble forward current
l50
Capacitance
mA
,F
10'
SO
C"f(v~l
[
I f-++-H-'~~~ccJ
250
150
-
IlIA ff""f{T.mt.)
200
v
I,
r:
~
Radiation characteristic 1,.,= flip)
Rediant intanslty I. = t{f.)
mW
%
100
I"
/
cR'~J,a,.:13SKrw
r--
30
H-+-+-+--f-'\\t-H-t--1
).
"-
10'
10
100
-r
H-+--i"'..t,-+-+--H-t--1
t
5OH-+-+-+--H"'k+'H
20
40
60
80
".,
.moe
I i
O.B
to
1.2 1.4 1.6 1.8 2.0 2.2 2.4V
-~T.....
.,
- " ' VF
Forw.rd volt..a ~ = tl T.....)
Radiant intenlitv
Vf~5°
1.1;5
,
mV
10'
--~
Perm. pul.. handlin, capability
0
r, .. flt); .... parameter;
= fl T,mb)
T~ ..
"40"C
A
1.4
14
·~1.2
ts.or~1.Z
1
1
*
1.0
0.8
H+H+H-f-+i-f-H
10'
'I' '01
'"
1.0
H+H+H-PH+H
0.8
10'
O£
H+H-f-H
0.6 H+H+H+H+~
0.4
H-f-H-f-H
0.4
H+H+H-f-H-+H
0.1
H+H-f-H-f-H-f-H
0.1
o
~JO
-20 -10 0 10 20 30 40 &I 60 70
IJ)
90 100°C
·_ft
H-tI
-30-20-100 10 201140 50607080 !K)XlO
--r....
--'mlllb
Powa, dluipation .. a function
of forward currant tor max.
forw.rd volt.,. P,ot = ((I.)
o
100 ZOO 300 400 500 600 700 1100 900 mW
- - Ptot
282
hIoIi~c.o s
~,
I.
Ii
0(
-,
litronix
SFH 404
A Siemens Company
INFRARED EMITTER
Package Dimensions in Inches (mm)
FEATURES
•
Similar to TO·46 Package
•
Flat Plastic Coating
•
1/10" (2.54 mm) Lead Spacing
•
Burrus Type GaAIAs Emitter
•
For Fiber Optics Communications
Up to 40 MBitls
•
Output Radiant Power, 100 "W
DESCRIPTION
The SFH·404 is a GaAIAs infrared
emitting diode of the burrus type. It is
designed for applications in fiber
optics communications to 40 MBit/s
and lengths of several kilometers.
The diode is mounted centrally in a
copper case for high performance
without additional light pipe
connectors. The case allows direct
contact with projected light pipe spot
face (0 >2 mm). Anode and cathode
are isolated from the case.
Maximum Rallngs
Reverse Voltage (VRl.. . . . . . . . . . . . . .. . ..........•.•... 2 V
Forward Current when incorporated in
plug for fiber-optic sySlems(lF) .................. 180 mA
Forward Current (IF) ............................ " 180 mA
Surge Current (iFS), t<10,.s ....................... 300 mA
Storage Temperature (T,,) .................... -40 to +8O"C
Junction Temperature (Ti) ..................•..•....•• 8O"C
Thermal Resistance ..................................... ..
Junction-ta-Air (RIhJamb) ...............•........ 500 CILW
Junction-ta-Air (RIhJcase)
When Inserted in LWL Socket ..............•... 170 C/W
Characterllllcl (T.mb425~C)
Wavelength at Peak Emission (Apeak) ••••••• 830 ±20 nm
Spectral Bandwidth (~A) .......................... 40 nm
Radiant Intensity (Ie) ........................... 1.5 mW/sr
Coupled-in radiant power (at IF=100 mAl
in a gradient profile fiber,
core diameter 63 I'm,
NA =0.22 (c/ltn) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >40 "W
in a stepped profile fiber,
core diameter 200 I'm,
NA=0.22 (in) ................................. >300 "W
in a stepped profile fiber,
core diameter 200 I'm,
NA=O.4 (in) .................................. >700 I'W
Capacitance (Co) .................................. 370pF
Rise Time (t,) ...................................... 15 ns
Fall Time (t,) ....................................... 15 ns
Bandwidth (B) ................................... 40 MHz
Forward Voltage (VF)
1r-5 mA ................................... 1.35 (1.65) V
IF=50 mA .................................. 1.SO (1.80) V
IF=100 mA ................................ 1.65 (1.95) V
Specifications subject to change without notice.
283
I
MAXIMUM PERMISSIBLE
FORWARD CURRENT
PHOTOCURRENT
Ip:f(Ev)
mA
~A
200
10 1
I,
I
- f---
f--
I-- f--
rv---
/,
10°
f---
I'..
\
~
ITT
40
/..
10.1
--
R'hJamb = 500 C/W .""
o
I
\
.-
I--
o
I,
-- -
R'hJcase= 170 CIW
--
100 I-- 1--I--
~
-
-
-
--
\
,I;
10-2
\
~
-3
10
80'(
10°
0 "11111
0,005
RADIATION CHARACTERISTICS
Ip =f(l")
20'
30'
30'
40'
40'
50'
50'
50'
70'
BO'
90'
60'
70'
80'
90'
100'
284
o,os
10 3 Ix
2
101
10
-E,
0
0
1111111
D,5
-E,
0
5 mW
em!
litronix
SFH 407 SERIES
A Siemens Company
INFRARED EMITTER
Package Dimensions In Inches (mm)
2,16
!~gj!
2,09
,067
LI==1iIl~~R
fHt .--------''"'4'fj.''A
,059
,57
HHi
A
.492
ANODE
Maximum Ratings
Reverse Voltage (V R) . , , ... ' ...... , .. , , ............ , ..... , .. 2 V
Forward Current (IF) . , , , .. , ............ , , , , . , ....... , , . .. 50 mA
Forward Current When Mounted In LWL Socket (IF).
(Tamb",25'C) ..... , ........ ' .. , ....................... 100 mA
Surge Current (IFsl.
100 ~s . , .... , , ......... , , .......... , 200 A
Storage Temperature Range(T.).,." ....... , ....... -40 to +SO'C
Junction Temperature (Tj) ........ , ........... ' ............. SO'C
Thermal Resistance:
Junctlon·to·Alr (RthJamb) ... "., ...... , ....•..•..•..... 750 KIW
Junctlon·to·Alr When Inserted in
LWL Socket (RthJamb)' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 400 KIW
Junctlon·to·Case (RthJG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 225 KIW
T'"
FEATURES
•
T()'46 Package
•
Flat Epoxy Coating
• 1/10' (2.54 mm) Lead Spacing
• For Fiber Optic Communications
Up to 5 MBltls
•
Three Intensity Ranges
SFH 407·1, .4 to .8 mW
SFH 407·2, .63 to 1.25 mW
SFH 407·3, 1.0 to 2.0 mW
DESCRIPTION
The SFH 407 GaAs diode emits
radiation In the near infrared range.
The radiation emitted is excited by
current flowing In the forward
direction and can be modulated. This
diode is particularly noted for its high
radiation ability.
The SFH 407 is mounted in a TO·46
case with collar casing and is
encapsulated with epoxy. It is
designed for applications in fiber
optics communications up to 5 MBit/s.
=
Characteristics (Tamb 25 ·C)
Wavelength at Peak Emission. Xp.ak .... , ' , ... , . , ' . . . .. 900:1: 20 nm
Spectral Bandwidth. AA , •..••••• , •••.••• , , •. , •• ' ••..•.•• ,. 40 nm
Half·Ufe Radiant IntenSity In Gradient Profile Fiber
with Core Diameter 63~m and NA = 0.2 (I. = 1 mW/sr).
"'In ...........•.....•....... , .....•..........••........
2~W
Rise Time (10% to 9O%/1~= 100 mAl. t, " " .... " ' .. ' ........ 50 ns
Fall Time (90% to 10'lo/lF = 100 mAl. t f •. , ••••••.•.•.•.•••••.• 40 ns
Bandwidth. B ................... , ................... , . .. 7 MHz
Forward Voltage (IF=30 mAl. UF ..................... 1.22 (",1.6) V
Reverse Current (VR =2 V).IR .............. , ......... 0.01 ('" 10)~
Capacitance (VR = 0 V). Co ................................ 35 pF
Group
I
Radiant Intensity. I.
0.4 to 0.6 0.63 to 1.25 1.0 to 2,0 mW/sr
Radiant Flux (Radiant
Power) (Total) Typ .• "'.
Gradiant Profile Fiber
Optic Cable with Cord
Diameter = 63 ~ and
NA = 0.2 (Total) Typ,.
II
III
1.9
3.0
.7
mW
1.1
1.8
2,6
~W
"'In
Specifications subject to change without notice.
285
I
RADIATION CHARACTERISTICS
FORWARD CURRENT IF = f(VFf
MAXIMUM PERMISSIBLE
FORWARD CURRENT
IF =I(T.mb)
mA
20
o~,-
mA
100
-rYf±m
~ ~ =" ~- RthJcase= 2;5-KIW
1,
o K.nuq
1,
/
lIS f---f---
K}'!'
-
thJamb = 400
-
100
kc···
f---f---
.1 -f-
f---I-
Or r~
'1-
,rr-
Jffi1KM -~~
o
o 10
/
r-
..
-
-It--
-I-
~:L
r,-
/
~I
~9
\5
1.1
-V,
20 30 40 50 60 10 80 90100'(
1.7 V
-T'lmb
,F
CAPACITANCE C = f(V A)
.
1fWI/"
\5
100
c
I
)I)
I
I
!
0
\
\
90
I
50
I;
iii
!
40
11 1'111
1'1
1.0
I
1\
II
30
I
D
0
~I
If
o
10 V
-VA
880
900
./
IV
"
920 940
_A
o IP
o
960 nm
I'" ....." d.O I"
IA. 12fia\ \
1
o
"
'1/
-,
~
,'-
;
/!:
:>
o
'" 120
IL
~
r-r+
~w
i
w
~ 100
1/
20
'"
"
40
60
1
r- ~
I
80
100
8
I"~
!
i"
!
0
I
-40
DC INPUT CURRENT ImAI
-t-i r-
I"-
20
0
20
40
AM81ENTTEMPERATURE I"CI
290
litronix
SFH 405 SERIES
A Siemens Company
INFRARED EMITTER
Package Dimensions In Inches (mm)
.112
.045
11.15)
12.84)
rl~~
~1g:J-
f--
1;tT\ ---:t t
i~lH:
::01::0=
I
0-5
0
I II¥~
!U)
I .....
11.5)
01 .059
016
- - i.-i04)
(~)
-li.- I.io1!
12.5) .126
J
J.
0:8
•
.t
.137
I
lPo)
~.118~
\
o-So
i--I;~)--l
Maximum Ratings
FEATURES
• Miniature Plastic Package
• 1/10' (10 mm) Lead Spacing
• Emitter for SFH·305
Phototranslstor Detector
• Designed for Maximum Spacing
of 10 mm aetween Emitter and
Detector
• Four Radiant Intensity Groups
DESCRIPTION
The SFH 405 is a GaAs infrared diode
which emits radiation at a wavelength
in the near Infrared. The radiation
emitted Is excited by current flowing
in the forward direction.
The case is transparent plastic with a
lens shaped light output. The plastic Is
slightly smoke colored in order to
differentiate between phototranslstors
of the same type (SFH 305). The
terminals are solder pins In 1/10' (2.54
mm) lead spacing. The infrared
emitting diodes are grouped according
to radiation intensity. SFH 405 Is
suitable for use as emitter with the
phototranslstor SFH 305 to effect
miniature light barriers with close
spacing between sender and receiver
up to 10 mm maximum. The cathode Is
marked with a colored dot.
Reverse Voltage (VR) • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •• 4 V
Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 40 mA
Surge Current(I FS)' ts 10 I'S . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A
Junction Temperature (TI) ...............•.......... 80°0
Storage Temperature (Ts) . . . . . . . . . . . . . .. . .. -40 to +80°C
Soldering Temperature In a 2 mm case. (TL)
(ts3 s) .............................••.•..•.•.• 230°C
Power Dissipation (Ptot )
(Tamb =25'C) .................................. 65 mW
Thermal Resistance
Junction-to·Air (AthJ.."tJ ...........•..••....••. 950 crw
Junction·to-Case (RthJLl . . . . . . . . . . . . . . . . . . . . . . .. 850 crw
Characteristics (Tamb = 25°C)
Wavelength at Peak Emission at Imax. >-p.ak . . . • • • . . .• 950 nm
Spectral Bandwidth at 50% of Imax. 4X . . • . . • . • • • . .• :dO nm
Switching Times (I. from 10% to 90%;
IF 50 mAl. tr; t f • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •• 1,.s
Capacitance (VR 0 V). Co ......................... 80 pF
Forward Voltage (IF 50 mAIo VF .••....••••..• 1.25 (:$1.6) V
Breakdown Voltage (IR 100 ~). VBR ••••••••••••• 30 (0=4) V
Reverse Current(VR= 3 V). IR ................ 0.Q1 (:$10),.A
Temperature Coefficient of I. or
TC . . . . . . . • .. -O.55%/K
Temperature Coefficient of VF • TC . . . . . . . . • . . • .• -1.5 mV/K
Temperature Coefficient of >-p.ak. TC . . . . . . . • . . . •• 0.3 nmlK
Half Angle. . (Total) typo
1.6
2.5
f4
~.3
r.w
Specifications subject to change without notice.
291
I
FORWARD
VOLTAGE
CAPACITANCE
C=I(V R)
m'W'
VF
VF25
,
pF
80 r-rcmmr-rcmmrrmTnlrTrTT1III
1/1
I"
H--H-++++H-+-t-H
11
1.0
I-fn'"t'H-H~±ti
0,8
H--Hri-+++H-+-t-H
0,6
f-t-H+H+t++t--l--l
0.4
H-+H-+++H--H-H
0,1
H-+-+++-I-H--H-H
so
I
10'
40
30
I
I
'D'
10
'0
I I
10"
~
I I
W U
~
uv
• U U
~
-~
10-3
I
i:;blW~u
!
1.0
I
I,
i
I
,'I-..
I.
I
,
i
I
I
0,'
UI~
0.4
L'
01
L
1
I
950
'"N
i
940
'1
I
-w
900
O(
RELATIVE
SPECTRAL
EMISSION Irel = 1(1.)
90
H-+-++-H+++-1
r'
-i-'-t---+1t+-i-H-+--1.
75
10·l'7"~_CW"LLWWLCClliL""",
10 5 1)4 -0-1 10 1 1rl rI fi
100 DC
I.
I
I /
I-- e-
o~
o
MAXIMUM PERMISSIBLE
FORWARD CURRENT
mA
5
-¥
.I /r-/
li /-4-
,/
I 1/ v,
~ V 1,..0- 1-'1
p
10
20
1
-
mIN
50
N
4
!
P",
40
30
lI!
30
_I,
I
20
-'-
OS
\,\
-
~0{
-?"
~
s
--r
T-' 7
6
I--e- e ·
1080nm
50
RADIATION
CHARACTERISTICS
mW/v
1
-A
15
RADIANT
INTENSITY
Ie "I(IF)
80
IIIIl
o
--fg...
'DO r-r-r...".,rr-rT-r-rTO
'f
02
10-' 0,5
910
I II III
-30-lD-Kl 0 Kl20111.0506070M90JOO
..
V ...
I
910
, i
I'
I
~01~~lo·ro;lltlTII
,
0,02 0
930
,
I
V
i
I
,
PERMISSIBLE
PULSE LOAD
IF= I(T); Tamb = 25'C;
Duty Cycle
• D = Parameter
~V
960
,"(I
fil10 00 90 OJ DC
~fu-q
I
I
I ,I ,
J JJ
!:{l
-"'"
1O'~~q
,
I
30 2010 0 10 20 30 40
1000
I!, .
1
0.8
'0' Y
fJD
!
:
,
L
10-l
WAVELENGTH
AT PEAK EMISSION
hpeak = I(Tamb)
~ =1(Tamb)
l
1J-2
--'0
RADIANT INTENSITY
1,4
=(Tamb)
RttoJO"'b ,,950
\~R"'JL =8S0K/W
Kt¥'\
~
10
40mA
292
o
i\
o
20
100
--'...
lIJ
80
0
100 0(
!
litronix
LD 261 SERIES
A Siemens Company
INFRARED EMITTING DIODE
SINGLE AND ARRAYS
..-
Arrays
Single Unit
Package Dimensions
'2.1,
• AI
......
......
JIIIII,JI
Slnw wIth 6 diodes ('.g, LDH61
$Rllltant
~
Area
Dimenlionl Inside parenthe.ls are In mm
Dimensions outsIde parenth..ls ar. In Inch..
Maximum Ratings
Reverse voltage
Forward current
T.tOf
4
50
t.5
80
-4010 +80
V
mA
A
°C
°C
T,
p...
230
85
°C
mW
RthJ.mb
R1hJL
750
650
K/W
K/W
"'put
950
nm
dA
± 20
nm
to ~
Co
1
60
~.
V.
IF
'F.
T,
Surge currant (t S 10 ~8)
Junction temperature
Storage temperature
Soldering temperature in 8 2 mm distance
from lhe ca.. bottom It ~ 3 I)
Power dissipation IT, • 25°C)
Thermal resistance
FEATURES
Low Cost
• Miniatura Size
• Available As Single Unit, LD 261 and ArraysTwo Diodes, LD 262
Three Diod.., LD 263
Four Diad.., LD 264
Five Diod.., LD 266
Six Diad.., LD 266
Sevan Diad.., LD 267
Eight Diad.., LD 266
Nine Diod•• , LD 269
Ten Diod.., LD 260
• Medium Wide Beam, 30·
High Power,8 mW Typical
• High Intensity, 10 mW/.r
DESCRIPTION
The GaAs infrared emitting diode LD 261 is designed
to emit radiation at a wavelength in the near infrared
range. The radiation emitted is excited by currant
flowing in the forward direction.
.
The case out of glass-clear plastic material provides
len.-shaped light output. The plastic i. slightly orange
colored in order to make the diodes different from the
same type phototransistors (BPX 811. The terminals
are solder pins in 2.54 mm (1/10"1 lead spacing. The
infrared emitting diodes ara grouped according to their
radiant intensity. To identify the group the cathode
terminal i. marked by a colored dot.
The LD 261 in conjunction with the BPX 81 phototransistor is su itable for use in light barriers when
emitter and detector are spacad approximately 10 mm
apart. Mounting on PC boards as well as incorporation
in thickfilm circuits can easily be performed. Thus,
evan complex scanning systems can be raalized. Like
the phototransistor series BPX BO to BPX 89, the
LD 261 infrared emitting diodes are also available in
arrays up to 10 units compriSing LD 260 to LD 269.
Junction to air
Junction to solder pin
Characteristics (Tomb = 25°C)
Wavelength at peak emission at InIIIl
Spectral bandwidth al 50% of ......
Switching times
II. from 10% to 90%: IF ~ 50 mAl
CSpacitanoa at V. = a V
pF
ForwardvahegallF· 50mA)
VF
1.251~ 1.6)
V
Breakdown vanaue II. = 100 ~AI
VI.
30 I~ 4)
V
I.
0.01 I~ 10)
~A
Revs... curronllV. = 3 V)
Temperature _Icionl of I. or ..
TC
-0.55
'IIoIK
Temperature _icionl '" V.
TC
-1.5
mV/K
Temperature coefficient of A.puk
TC
0.3
nm/K
Hlif angle
,,!j()
degree
The diodes are grouped according to their radiant intensity at If = 60 mA in Ixial direction.
i.
Radiant Intensity & Power
lYpo
Color Coda
ICathoda)
LD281-4
Yellow
LD 281·5
Green
LD281-6
Blue
Group
Intensity ..4>,ITOIol)
Intensity .:
Min
2.0
lYp
Mix
4.0
Unll
mW/sr
mW
3.2
6.3
mW/sr
S.O
10
mW/,r
3.2
mW
4>,ITo,"11
Intensity 1,-
LD 262 ,hru LD 280
LD 282A 'hru LD 260A
LD 262B Ihru LD 2608
LD 262C 'hru LD 280C
4>,ITolll)
I,
I,
I.
I,
mW
.32
2.5
3.15
4.8
·Aadiant flul( (radilnt power) •• in I cone
with. half angle., of 3ct
c....orNldllltton ... funotlon
oft... h.lI..n....
Specifications .r.• subject to
change without notice.
293
Till Condilion
50mA
50mA
50mA
SOmA
SOmA
SOmA
50mA
SOmA
SOmA
SOmA
I
Ralatlva spectralaminion Irel
'"
f 1M
.w
'4
•
100
90
I.
'f:
,
7
r
1\
,
,
60
/
50
40
III
o
•
,,
...
/'
I
10
,
,
1\
30
,
,
/'
If, './
920
960
IIMXI IIW
_A
•ofJ"
1080II1II
2S
so
100 ••
7S
Max, permi'sible forward current
••
Forwa/'d voltaga/F '" f (Vr)
IF = f(T)
1110
50
10'
*",650"•
.,.... ,750~
~
~.-
~
'\.
20
40
60
m·'
III
liD
-,
Forward voltage ~
Capacitanca C = f tVA)
pf
90
=
"
~
a
wu
Radiantinten'ity~ '"
f (T,mb)
I.'
i:2s.or~1.2
1
1.0
50
0.9
H+H+H+H+H
O.
H+H+H+H+H
uv
-',
~~. 1..1
1
60
U
1.4
..'l
, 70
!
L...J.LJ...l.-..L.....l......l.--'--.J..-'
U W
Of;
f{T,,,,o)
1.0
40
30
10
.
10
w·
.<
,
0.' H+H+H+H+H
Q4
01
0.1
o
-JO-20..JO 0 1I 20 3040 OOW70Bl !MJIID
- '...
990
j"90
970
....v
960
...)'"
950
940
I--'
930
910
91.0
900
o
l'l
50
- ...
15
100Ge
294
- ...
-lI-2O-1I0 II 20ll 100006070
Parm, pulaa handling cap.bUlty
IF" I(t): j'" p,rametar; T, ... '" 25 'C
Wavelangth at peak amlnion
A•• d '" ftT. mb )
,
II(
H+H+H+H+H
II}
!lJOO OC
PHOTODIODES
Dark Currant
Package
Type
TO-1B
Round
Plastic Lens
Part Number
Package Outlina
:
[)
Half Angle
[V,] E-O
IR mAl
Sensitivity
• (nA/lx)
Typical
Page "
;
BPX63
75·
5 pA «20)
[1V]
10
297'
1«5)
[20V]
10
2991
I
TO-1B Flat
Glass Lens
:
~
BPX65
,15«0,3)
[1V]
BPX66
,
TO-1B Flat
Glass Lens
~
:
,
i
30·
SFH202
60·
1«5)
[20V]
9
301,
10
303;
,
;
,
,
Similar to
TO-5
Flat
Glass Lens
:t1
BPX60
50·
7«300)
[10V]
2«30)
[10V]
BPX61
50
305
70
307!
"
;
Similar to
TO-5
Flat
Glass Lens
=tJ
SFH203
•
295
50·
7«50)
[10V]
7.5
309
I
PHOTODIODES
Package
Type
Plastic,
Colorless,
Solder Tabs
Plastic,
"Slack
Plastic,
Colorless
Solder Tabs
Plastic,
Colorless,
Solder Tabs
Plastic,
Colorless,
Solder Tabs
Package Outline
A
n
A
F\
Part Number
BPX4S
Half Angle
60°
Dark Current
[V,] E'()
IR mAl
100«200)
[10V]
2«30)
[10V]
BP104
BPW33
60°
20pa«1001
[1V]
Sensitivity
s (nA:lx)
Typical
32
40 A cm 2
I.l mW
315
50
70
317
BPX91B
7«300)
[10V]
50
319
BPX90
5«2001
[10V]
40
321
BPX93
0.5«50)
[10V]
8
323
5pA«20)
[1V]
10
325
SFH100
0.4«10)
[7V]
175
327
SFH200
20 pA
[3V]
20
329
1«1001
[10V]
7
331
BPW32
60°
BPX92
60°
SFH205
70°
333
335
SFH206
2«301
[10V]
SFH206K
fl
313
2«30)
[10V]
50 A cm 2
I.l
mW
Plastic,
Colorless
311
BPW34
Plastic,
'Slack,
Solder Tabs
=::r~~~]
Page
60°
70
337
11
339
-----..,------
Miniature
6 Lead
Four
Quadrant
SFH204
*Transparent to I.R. transmission
296
0.01«21
[10V]
litronix
BPX63
A Siemens Company
PHOTODIODE
Package Dimensions
Radiant Sensitive Area
~ .018 (O.'S)
.571 (14,5)
.492112,51
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are In Inches
Maximum Ratings
I ~55to+90 I~c
Reverse voltage
Storage temperature range
Power dissipation (T.mb = 25°C)
200
mW
Characteristics (T.mb = 25°C)
FEATURES
• Silicon Planar Photodiode
• Modified TO-18 Package
• Metal Case and Plastic Lens
•
Very Low Dark Current, 5 pA
Spectral sensitivity 1)
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon) (.I.. = 800 nm)
Spectral sensitivity (.t = 800 om)
Forward voltage 2)
(E= 0; I, = 1 pA; T'mb = 50"C)
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
S
The BPX 63 is a planar silicon photodiode,
mounted on a TO-1S base plate and
covered with transparent plastic material.
The BPX 63 has been developed as a detector for low illuminances and is intended
for use as a sensor for exposure meters and
automatic exposure meters. The component is outstanding for low dark currents
and -when used as a voltaic cell-for a
high open circuit voltage at low illuminances. The cathode of the BPX 63 is
electrically connected to the case.
nAllx
0.73
S
0.47
A/W
v,
1(.0.5)
mV
(RL = 1 kG; V. = OV; A= 950nm)
(RL = 1 kG; V. = 5 V; A= 950nm)
t,; ~
Capacitance (VR ::: 0 V)
Co
C3
I.
TC
A
1.3
1.0
120
50
5(.20)
0.1
IV.=3V)
DESCRIPTION
10(.8)
800
nm
~
Dark current (VR = 1 V; E:::: 0)
Temperature coefficient of I K
Radiant sensitive area
Noise equivalent power
(V.=lV)
Detection limit (VR
=1 V)
As~.
tr;tf
NEP
O·
Photon
.'.'
pF
pF
pA
%II<
mm 2
2.7 x 10-16
3.7 x 1013
W
v'RZ
cmJHi
w
1) The illuminance indicated IVlars to unliltered radiation of I tungaten filamant lamp at a colour temperatuIV of
2856 K Istlndaret light A in accordlnca with DIN 5033and lEe publ. 306·1).
2) VF ia a meuure forthllow ... apeetrll sensitivity when the photodioda is uSld in a.posunt ..... te,..
Specifications are subject to change without notice.
297
I
...a.uv. ....c;t,......sltlvfty
%
100
.. ,
DiNctional characterlftlc Jp = , 1.1
lEw)
II '\
II
60
i\
\
\
II
10'ID.
40
20
Photocunent Jp
"•. --'u.)
I
1\
1/
\
-
10-'
I
L_
400
800
600
1000
10-'
1200nm
10'
10'
aOO5
aDS
-x
m'
-E.
-E.
lO l lx
115
5 mW
;r
CtlJNlctgnce C'" , IVA)
of
120
mW
15
200
T\
~~
r
1\
150
v
f\
15
I'
II
100
1\
~50
J{)
--1---
~
-r-
80
70
50
10
40
i/
JO
II
o
20 30 40 50 60 70 80 gO 100 'C
10
10
1
I
4 5
J
6 7 8 g
-VA
-IDll'lb
Dark CU'Nnt JR .. f (~m.J
Ew=O;VR =lV
,A
10'
1.2
lI-
V
.L
0.6
tvP
100'/
10'
0.4
I)
10'
QI
·JO ·10·10 0 10 10 JO 40 50 60 70 IIl'C
-;;.,.
I'
60
V
t--~
110
1':
1/
,I
IT~o
c
10
40
60
80
_ 1...
298
mV
0
10.3
10·'
10-1
10'
-V,
litronix
BPX65
A Siemens Company
PIN PHOTODIODE
Package Dimensions
Radiant Stnsitive Area
.03911.0111.039 (1,O)
1
~.110~
1(2.8I!
I
Anode
.571 (14,SI
~.492t12.S1
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis ar. in inches
Maximum Ratings
Reverse voltage
Junction temperature
Storage temperature range
1
Power dissipation
IV·C
50
125
- 55 to + 125
250
"C
mW
Characteristics (T.mb = 25°C)
FEATURES
• Silicon Planar Pin Photodiode
• Premium Hi-Rei Device
• TO-18 Size Package
• Flat Glass Lens
• High Speed, 1 ns
• Low Dark Current, 1 nA
DESCRIPTION
The BPX 65 is a planar silicon PIN photodiode in a case 18 A 2 DIN 41876 (sim. to
TO-18) with a flat window. The cathode is
electrically connected to the case. The flat
window has no influence on the beam path
of optical lens systems., Because of its high
cut-off frequency this diode is particularly
suitable for use as optical sensor of high
modulation bandwidth.
Radiant sensitive area
A
Wavelength of the max. sensitivity
Quantum Vield
(Electrons per photon) (A == 850 nm)
Spectral sensitivity (A "" 850 nm)
Rise time of the photo current
(load resistance Rl::::: 50Q; VR "" 20 V;
J...=900nml
Capacitance (VR = 0 VI
(V. = 1 V)
As m..
(V. = 20 V)
Cut off·frequency (load resistance RL"" 50 n;
V.: 20V: A= 900 nm)
Dark current (VA "" 20 V; E "" 0)
Spectral sensitivity 1) VA 20 V
Noise equivalent power
(V.: 20 V)
=
I mm 2
1
850
nm
0.80
Electrons
Photon
S
0.55
A/W
!,
0.5(")
15
12
3.5
ns
MHz
S
500
1 (> 5)
10« 7)
NEP
3.3)C 10-14
Co
C,
C20
t.
I.
Detection limit (VA "" 20 V)
D·
3.1
Temperature coefficient for Jp
TC
0.2
X
1012
pF
pF
pF
nA
nAllx
W
,rRZ
erne/Iii
%iK
1) Tha illuminance indicated refars to unfillated *Iatioo of a tungatan filament lamp at a color tamparatu,. of
2866 K (standard light Ain accOfdanc:ewith DIN 6033 andlEC pub!. 301·').
The PIN photodiode is outstanding for low
junction capacitance and short switching
times_
Specifications are subject to change without notice.
299
I
,
8peotMl ....mvftys..... IiI.llnA/W
IA)
HIt qUlltum
Photocunent Jp = 'IEJ
yi.'" 1')-'
In .1HtroM ..... photon
p'
ro'
III
s..,., ~
7
~1Al
t:
1--.1\
/
,/
4
,
SIAlI\'
1/
10'
I
II
I
15
aI
300
4~
500 60D 700 IIXI goo 1IllInm
_A
oW
JIll
\.
150
-1--
]";
1O-~1/
1\
IlII
___ .1=:=
.l1li_
~t-=--=
'O~
25
50
75
I'
MIO
m··L.....L_L---L_L_-'----J
o
'250(
10!i
Ii
....otocunent Ip .. , m
"'unction c.p8c~ C .. , (V"');
E = 0; mealuring ffequency, .. t MHz
p'
'5
Ev = 1000 'II;
v" •
1II
25
lOW
-'I
-l.o
10
t--
__
Dark cunen! I", .. ,
t~rJ
E .. O;V",= 20V
20Y
IIA
'--,--,--,--r-1r-1-'-'
I,
i
--
w'
J\.
m•
r
11'.
10
H't
60
-50
50
-...1
S.ri•• rsai."nCttRs = , IV",)
E = 0; measuring frequency I .. 100 MHz
I~0
,
\
1\
100
\.
rf--
.-
"'
.
_
-f--
~
.. r -
IJ·'
o
.1I't
10
15
-,
10
15
o
JiV
o
10
20
3D
40
-~
300
'00
_ '. .
SOY
150't
litronix
BPX 66
A Siemens Company
PIN PHOTODIODE
Package Dimensions
.......-.t
.11D
,I.-
A,d;anlS,,,,j,,veA,e,
039(1.0) •. 039(1.0)
1"'''1
Anode
.571114,5)
f..--.492 (12,5)
1
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
Reverse voltage
Junction temperature
Storage temperature range
Power dissipation
FEATURES
•
Silicon Planar Pin Photodiode
•
Premium Hi· Rei Device
•
TO-18 Size Package
•
Flat Glass Lens
•
High Speed, 0.5 ns
•
Low Dark Current, 0.15 nA
The BPX 66 is a planar silicon PIN photo·
diode in a case 18 A 2 DIN 41876 (sim. to
TO·18) with a flat window and extremely
low dark current. The cathode is electrically
connected to the case. The flat window has
no influence on the beam path of optical
lens systems. Because of its high cut·off
frequency, this diode is particularly suitable
for use as optical sensor of high modula·
tion bandwidth.
IV'C
+ 125
°c
mW
Characteristics (Tomb = 25° C)
Radiant sensitive area
Wavelength of the max. sensitivity
Ouantum yield
(Electrons per photon) (.I. = 850 nm)
Spectral sensitivity (). = 850 nm)
Rise time of the photocurrent
(load resistanceRl::: 500; VR "" 20V;
J.. 900nm)
Capacitance (VR = 0 VI
iV.=1V)
iV. = 20V)
Cut-oft-frequency (load resistance Rl = 500;
V. = 20 V; A= 900 nm)
Oark: current (VR 1 V; E 0)
=
=
DESCRIPTION
50
125
1 - 55 to
250
Spectral sensitivity 1) (VR
Noise equivalent power
=
=1 V)
IV.=1V)
Detection limit (VR
=1 VI
Temperature coefficient for I p
A
..lSmex
mm2
nm
1
850
"
0.80
Electrons
Photon
S
0.55
A/W
t,
CO
C,
C20
0.51~
15
12
3.5
'.
0.151~
I.
s
1)
ns
pF
pF
pF
500
91~
MHz
0.3)
5)
NEP
1.3
x 10-14
O·
6.4
x 1012
TC
0.2
nA
nAllx
W
y'Ri
cm,ipi
W
%/K
11 Tha illuminance indicated refan 10 unfUteNd rectiation of a tungsten filament lamp at a colOl.lr temperature of
2856 K (stendard light A in accordance with DIN 5033 altCllEC publ. 306·1).
The PIN photodiode is outstanding for low
junction capacitance and short switching
times.
Specifications are subject to change without notice.
301
I
SIMctr.' .. nlltlvItyS", '" , I}..f in AIW
Photocurrent I p
'" ,
Dlrectionel cherecterietlc lp .. ,
(E.f
(~f
end quentum yield ft '" , I" f
In electron. per photon
,
a
''''t~' ~.
1
Q
,.-
7
O~
,1?IAl
I
5
"""\
,
\\
SIAl
/
4
\
/
/
1
1
15
Q1
300
400 500 600
700 BOO SOD
_A
lCXXJnm
0005
0,5
--E,
mW Power dlullHltlon PIG' '" , IT_~)
Oerk Clurrent III '" f
lI A E'" 0 T."'b'" 25"C
300
,,-'
!
I
ti
~ot
150
100
150
100
(~J
2
r-
tt i\f
-
Iii
.
'1\
50
,
IIIt-
-
\;j---'
m
25
pf
0.05
..
..
'
\
75
~ ::=
\
\
S
100
::=
_lypicolaJrve
--limilturvl!
'
o
175°(
- - .... ,omb
15
20
15
JOV
-~
PhotoClurrent
JunCltlon ClepeCllte"" C '" , W.. I;
E'" 0: measuring frequency' '" 1 MHz
Wi
':/
Ip"'f
In
DerkClu,rentIII '" 'ITI
~A VIl ",lV;E=O
,A E.'" 1000 Ix; VII '" lV
15 ,..-,---.----,---,---,-,
10
I,
10 '
t
10
10-1
I
,
.
•..."
,
'(I
OL-L-~~-L-L-L~~
10 2 V
o
-~
20
40
-,
60
lOll
8{)°C
Serle.....lstenc.Rs = , (VAl
E'" 0; me.suring frequency' '"' 100 MHz
Dark Clurrent /11 '" , 1"'1
Tomb'" parameter; E '" 0
g
100
\
"
\
1
150
\
\
100
""'-,
'-...
50
-lQOC
10
15
20
25
o
lOV
-~
o
20
3D
40
--~
302
SOV
-,
150
200°C
litronix
SFH202
A Siemens Company
PIN PHOTO DIODE
Package Dimensions in Inches (mm)
J!E
Radiant Sensitive Area .039 (t,0) x .039 (1,0)
"Od •
.185 .181
-14,7.)(4,6)
~
!
.571 .492
114.51112.5)
FEATURES
• T0-18 Hermetic Package
• Flat Glass Lens
Optic Communications
• tgFor= Fiber
500 MHz, tr = 0.5 ns
DESCRIPTION
SFH 202 is a planar silicon PIN-photo
diode in case 18A2 DIN 41876 (similar
to T018) with flat glass lens. The cathode
is electrically connected with the case.
The PIN diode is a receiver with high
limiting frequency that distinguishes
itself through limited reverse current
capacity and short switching time.
Through the flat lens the diode is especially suitable for use with fiber optic
cables, up to 560 Mbits/s.
-
_
"
-
G>
Ii
.t
-
;;;~.
_
'217.209
15.5) 15.3)
Maximum Ratings
Reverse voltage
VA
50
Junction temperature
Storage temperature range
7j
T,
80
-40 ... +80
"c
"c
A
Xsmax
1
850
mm 2
nm
Electrons
Photon
A/W
V
Characteristics (Tamb = 25"c)
Radiant sensitive area
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon)(). == 850 nm)
Spectral sensitivity (). :::: 850 nm)
Rise time of the photocurrent
IRL = 50il; VA = 20 V; ~
= 900 nm)
~
0.80
S,
0.55
t,
0.51<; 1)
Co
C,
C2 •
15
12
3.5
Capacitance
IVA
IVA
IVA
= 0 V)
= 1 V)
= 20 V)
pF
pF
pF
Cut-off frequency
IRL = 500; VA = 20 V; ~ = 900 nml
Dark current (VR = 20 V; E = 0)
Spectral sensitivity (VR == 20 V)
IA
S
"
500
11<;5)
101;;'71
Noise equivalent power (VR = 20 V)
NEP
3.3 x 10-14
Detection limit (VR =20 V)
D*
3.1
Temperature coefficient for Ip
TK
0.2
x 1012
MHz
nA
nA/lx
W
v'Hz
cmv'Hz
-W-
%/K
Specifications are subject to change without notice.
303
I
Spectral sensitivity S '= f(~)
and quantum yield T/ = f ().)
AlW in electrons per photon
Relative spectral sensitivity
1
1
~9
S
r
100
O.9
O.8
o.a
~
7
~IAI
V
5
SIAl
4
\'
o.s
70
Q4
60
50
I
2
II
15,-~,-,--,~-,-,-,
II
f-- t--- __
1
\
II
--
o/
~2
30
QI5
20
Typical curve
limit curve
~
....-+-
10_
/
3
)
IJA E.=1000Ix; vlI=20V
Ip
Sf' 80
~6
r-,\
/
/
90
~7
Photocurrent 1,. =/( ' .......
,
1/0 S,.,,,,,/(.I.)
0
~ 300
1
400 SOO 600 700
800 A""
___
100g~m
0
400 500
600 700 800
900 1000 nm
10
--~
40
60
80 0 C
_ T....b
D,rk cqrrellt 1,.=((1.....b
)
IJA £=0; ..Y1I=20V
j'::.:
-Typical curve
__ limit curve
Typical curve
_limit curve
I~'
W'L-LJ---'--'---"---L-L-L.c'::-:'
o
_v,
Dark current 1,,=f(vlI);
~A
r........ ..: Parameter;
-SO
5 10 15 20 25 30 35 40 45 50 V
Junction capacitance
E= 0
100
C=(( VII);
10
fl
100
E:=O;
I
100?C
10-1
-15~C
10-2
50'
10")
--'.
.'
IlA
Directional charaCteristie 1,. =/(qJ)
Iii"
30'
30'
40'
411'
50'
50'
50'
50'
10'
1i1"
8i1"
90'
lOiI"
iii'
304
1500(
Series resistance Rs =/( VA);
e"=u; measuring frequency /=1 MH2
pr
10'
50
Photocurrent
1,.=((E.)
measuring treq.018(0.45)
~
.1l4tl,4)
126{3,2)
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
v.
Reverse voltage
Operating and storage temperature range
Junction temperature
Soldering temperature in a 2 mm distance
from the case bottom (t;:; 3 5)
Power dissipation
Thermal resistance
FEATURES
• Silicon Planar Photodiode
• Premium Hi-Rei Device
• Modified TO-5 Hermetic Case
•
•
Flat Glass Lens
Large Photo Sensitive Area
The BPX 60 is a planar silicon photodiode.
The large area photosensitive system is
suitable for cell as well as diode operation
at a very low reverse current level. The
hermetically sealed case-a TO-5 modification with flat glass window-allows application at extreme operating conditions. The
signal/noise ratio is particularly favorable
even at low illuminances. The open circuit
voltage at low illuminances is higher than
with comparable mesa photovoltaic cells.
V
40 to + 125°C
-
Tj
100
°C
To
230
325
300
80
'C
Ptot
Rth Jamb
Rth JCIM
mW
K/'tN
K/W
Characteristics (Tamb = 25 0 C)
Spectral sensitivity 1)
Wavelength of the max. sensitivity
Ouantum yield
(Electrons per photon) (J.. = 850 nm)
Spectral sensitivity (,I.. = 850 nm)
Open circuit voltage lEy:: 100 Ixl11
(E" :: 1000 IX)l)
DESCRIPTION
32
Tstor
Short circuit current (E" = 100 Ixl')
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
IR, = 1 kO; V. = 0 V;, = 950 nml
IR, = 1 kO; V. = 10V; ,= 950 nm)
AS mix
"S
V,
V,
I.
,r;t,
50 I_ 351
850
0.73
0.50
3601'270)
460
51_ 3.51
Temperature coefficient of VL
Temperature coefficient of lK
Junction capacitance
TC
TC
2.5
1.0
- 2.6
0.2
IV. = OV;/= lMHz;E= 01
IV. = 10V;/= 1 MHz; E = 01
Radiant sensitive area
Co
C,o
A
I.
750
220
7.6
71" 3001
Dark current (VR
=10 V; Tlmb = 25°C; E = 0)
tr;t,
nA/lx
nm
Electrons
Photon
A/W
mV
mV
.A
.s.s
mV/K
%/K
pF
pF
mml
nA
1) The illuminance indicated' reters to unfiltered radiation of • tungsten filament lamp at I colour temperature of
2856 K Istandard light Ain accordance with DIN 5033 and lEe pub!, 306-11.
Specifications are subject to change without notice.
305
I
Relative spectrel ..nsltlvity
",
S,"
t
Pttotocunent /p = , (E,)
Directiona' characteristic III. = , (1fI)
S..... 'I,\.I
Ul
r\
,9
IL
Q9
1\
V
Q7
~
O~
5
10'
4
OJ
2
0.1
l,;-
10,1
400
500
600
700
800 900
--,
l000nm
10'
O.OIlS'
10llx
10'
10'
-f,
0.5"'"
-f,
OIlS
5m!(
em'
Capacltence C = , (~I
"f
pf':lMH1;
n'
10'
oW
350
1000
JOO
r~
150
200
t
"Ibltt -aOKf'N
\
\
N~kIfIh·JO{]K~
I
900
[
I
0
90
700
10'
i
,i
600
i
500
150
40 0
100
3D 0
100
\
50
15
50
-- ...
15
100
10'
125°(;
I
I! :
I
-~
'"
f
rr...")
Open circuit volte.e Vc = f (E.I
Short circuit cur,.nt I ... " f (E,I
n'
mV
H- -t
700
I,
H-t-+:bH9-+1-'H
t as H+-H++-f-+
"70
-
i,1
10'
400
Q9
I
1
02 46 6 10 12.14 ti II 20222426ZSJO V
Derk cunent fR
VA=10V
I,,,, Ul
!(I~
I ' ~
I
' I,
r
lI-
H++-+-+-
60
50
'K
!
40
300
30
+-
100
i
_L
10
100
-- ...
·30 ·20 -11 0 10 20 30 40 5060 70
-- ...
100 L.....L ____ L_ . _ _ '--------L5!l
IJO
150
l(JOoe
o
1lO0(;
Open circuit votta•• ~ .. , n;'mbl
SOO
Short circuit cur,.nt
---
~
-
I"'......
- --
.......
0.8
I!-'!; .. ,IT"..J
r-...
-
Q6
0.6
-~--
r-
--
,-
0.4
,
~--
---
1
r-ro
r- r- --
~
~~- ~-
10
20
)IJ
40
5660
70
-.. . . . . . . '.b
o )()
60 0 C
306
20
-
_.
-
-1-- f--- _.
-
- ...
~.
30 40
~.
50 60
70
SOOt
o
--f.
lOOO Ix
litronix
BPX 61
A Siemens Company
PIN PHOTODIODE
Package Dimensions in Inches (mm)
RADIATION SENSITIVE
~::: :
,~::" ~"":~::o:x
.108(2.75
_r ~ ~'J
2.75}
325
(362
92JI
\~,
(18)
....
~34~ 11~7;)
iii'
(3.4)
(12.5)
(5.7)
(~'iJ
492
.224
Maximum Ratings
V.
Reverse voltage
Operating and storage temperatura range
FEATURES
•
•
•
•
•
•
•
Silicon Planar Pin Photodiode
Premium Hi· Rei Device
Modified TO·5 Hermetic Case
Flat Glass Lens
Large Photo Sensitive Area
Low Dark Current, 2 nA
Short Switching Time, 50 ns
DESCRIPTION
The BPX 61 is a planar silicon photodiode
with low reverse current. Its low capaci·
tance permits use up to 10 MHz. The large
area photosensitive system is suitable for
cell as well as diode operation at a very low
reverse current level. The hermetically
sealed case-a TO·5 modification with flat
glass window-allows application at
extreme operating conditions. The signal/
noise ratio is particularly favorable even at
low illuminances. The open circuit voltage
at low illuminances is higher than with
comparable mesa photovoltaic cells. The
PIN photodiode is outstanding for low
junction capacitance, high cut·off frequency
and short switching times.
T"""
Junction temperature
Soldering temperature in 8 2 mm distance
from the case bottom (t S 3 s)
Ii
Power dissipation (Tamb
Plot
To
= 2S"C)
""'""'......
' '-
Thermal resistance
32
-40 to +100
100
230
325
300
80
V
·C
·c
·c
mW
K/W
K/W
Characteristics (Tomb = 25°C)
Spectral sensitivity 11 (V. = 5 VI
s
Wavelength of the max." sensitivity
Quantum ytekl
""SINUt
(Electrons per photonl(! = 850 nml
Spoctralsensilivily (! = 850 nml
Open circuit voltage (Ev = 100 Ix) 1)
S
(Ey = 1000 Ix) 11
Short circuit current (Ev
:c
100 Ix) 11
Rise and fall time of the photocurrant
from 10% to 90% and
from 90% to 10% of the final value
(RL = I kO; V. = OV; != 950 nml
(RL = lkO; V. -IOV;!= 950nml
Temperature coefficient of VL
Temperatura coefficient of I K
capacitance
IV. = OV;f= IMHz;E= 01
IV.: 3V;f: I MHz;E= 01
Radiant sensitive area
Dart current
IV.: 10V;T_ = 25·C;E- 01
70 (~501
850
0.88
VL
VL
Ix
t,;t,
t,;r,
TC
TC
nAIl.
nm
Electrons
Photon
0.80
285
365
6.5
A/W
mV
mV
.A
125
50
-2.6
0.2
ns
ns
mV/K
%/K
72
pF
Co
C3
A
25(~
7.8
mm2
I.
2(' 301
nA
(V. = 10 VI
NEP
4.2 x 10-14
Detection limit (V. = 10 VI
0"
6.6 x1C)12
401
Noise equivalent power
pF
W
y11z
cmJf
11 n.. iIIumiMAC8 incm:.t.d ,.,.,. to unfi...... radlMlon of • tungsten lil.mlnt gmp at • color temperatura of
2858 K ~rd light Ain iICCOI"CMncnlith DtN 5033.nd lEe publ. 308-11.
Specifications are subject to change without notice.
307
I
"'lII1lW.,..ctr8l ..n,lttvlty
S••'·'(I..)
'!.
YlOO
/
90
\
J
"
1\
\
\
II
0
0
1
400 500 600 700 III 900 1000 Imnm
--,
Q,5 1
5 11
50 mW
--f.
oW
3SO
Cni2
pA
'000
Pf'OO
I I
•
150
-BOKIW
\
L
' ..... -300
100
I\.
/
4000
1/
150
100
100
Or-
50
o
V
t? ~
o
PhotocUrMnt 1..1:,. =
"
10
40'
30
-~
ft~)
,A
10'
"
Ql
7Of-'l'~H-Hl!IIH-HtHIH-l-tttllft
"
1.
r;H~++-H-t+±;;Pi
c
i
~~~UAAH-Hl!IIH-l~
"
JO
0.'
H+-HH-+H+-H
0.6
f-H++H-+++-H
0.4
H+-HH-+H+-H
0.1
HH++H-+++H
7
IL
lO'
10'
10
",,-I
0
.,-1
-1l-20-1O 0
t-..
I)
toO 50 60 '10 III f{
- - T...
10
1.1
I,
Iffi·
f'
:-....
.,
.-,
m 30
to
,....r-r-
r-
IIJl
~
,.
"'
0.4
0.4
.'
1
o
102030,40
sn
6070
o
80°C
---W
308
1
r-r10
10
-- ...
3040506070
BOoC
40
- ...
"
90
Ill't
litronix
SFH 203
A Siemens Company
SILICON PHOTODIODE
Package Dimensions
RllliantSolllitive Area .11813,01 x .11813.01
Dimensions inside parenthesis are in mm
Dimensions outside parenthe.is are in inches
FEATURES
• T0-5 Hermetic Package
• Flat Glass Lens
• BG 38 Filter for Adaptable Sensitivity
DESCRIPTION
SFH 203 is a silicon planar photodiode.
The large area photo sensitive system is
suitable for cell as well as diode operation
at very slow reverse voltage level. The
hermetic modified TO·5 package is sup·
plied with a flat glass lens that allows
operation under extreme conditions. The
filtered glass window (Schott & Gen)
adapts the system to a sensitive aperture.
The SFH 203 is therefore, especially
applicable for daylight as well as being
suitable for artificial lighting of high
color temperature for photography and
color analysis.
Maximum Ratings
Reverse voltage
Operating and storage temperature range
Junction temperature
Soldering temperature in a 2 mm
distance from the case bottom It < 3 5)
Power: dissipation
Thermal resistance
V.
T,
1j
32
-40 ... +100
100
V
"c
"c
230
325
300
80
"c
SA
S
~m."
7.5 (;> 51
555
0.21
nA/lx
nm
A/W
VL
VL
1.
244
380
0.70
~A
t,;tf
t,;tf
2.5
1.0
-0.6
0.2
TL
pto•
RthJamb
RthJca..
mW
K/W
K/W
IT. mb = 25"c1
Characteristics
Spectral sensitivity'
Wavelength of the max. sensitivity
Spectral sensitivity IX '" 555 nm)
Open circuit voltage
(Ev = 100 lxi'
(Ev = 1000 lxi'
Short circuit current lEv'" 100 IxI'
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
(RL = 1 kG; V. - 0 VI
IRL = 1 kG; V. = 10 VI
Temperature coefficient of VL
Temperature coefficient of IK
Capacitance
IV. = 0 V; f = 1 MHz; E - 01
IV. - 3 V;,f = 1 MHz; E - 01
Radiant sensitive area
Dark current IVR = 10 V; E '" 0)
TK
TK
Co
c..
A
I.
800
770
7.6
7 (';501
mV
mV
,..,..
%/K
%/K
pF
pF
mm'
nA
'The lIIuminanc:a indlc:ated refa,. to unfiltered radiation of·" tunlltan filament lamp at a c:olor
temperature of 2866 K !lUnderd light A In ec:c:ordanc:a with DIN 5033 end lEe publ. 306-11.
Specifications are subject to change without notice.
309
I
Short circuit current
r!;-f(Vv )
1)
\0
.......
i- f--
I-
"
.......
as
......
.......
0,4
o
1020
30
40
506010
-v.
1O'024681O.M~m20n~~2030V
0 0 10 20 30 40 50 80 70 8O'C
IJOOC
- 7...
Clpacitlnce
Photocurrent
C=I{VII)
i;;-'(T....,)
pf 1':'1 MHz
1000 rrnmrrmmrrmmrrTl1111l
1,2
I,
C 900 H-WlIIH+IIlIiIH~IIII-Hfllllll
t
I~ f \0 1'9,,-++++--H-++-H
800 I-ttH1I1t11-'1d-HtIIH+tHIII-+H!lIIII
700 t-+ttit!H-HltIiIH~Hlt-Hfllllll
o,sH++-+-+--H-++-H
6OOt-+H1itIH-HtIIII+HffilI-+HitIII
0,6
5OOt-HH1itIH-H1itII-\l-HffiIH-Httill
4OOH-ttt!!lll--tttltllll-lf\lHlIll-tHtllll
5OOH-ttt!!lll--tttltllll-lI-HlllIll-tH1tlll
2OOt-HH1itIH-IHl!!III-+Hffilf.>oI-HlHII
0,4
H-+++-H++-H-j
0,2
Hrl++-i-Hrl+-H
100
°
11)-'
11)-'
10'
Dertteurrent
nA
_T_
1O'V
1()1
-30-20-10 0102030 4050607llllJoC
-'I
Photoeurrent I, =1(£.)
fAA A.. 656 nm
ReI.tl.. spectr.1 senllti,ity
111 =1('_)
V II =10 V
5 ... 1 -10.)
10'
10'
1.0
I
I
J
V,
,02
1 1 I
11)0
°
20
40
80
80
- 7v
1OO'C
Directictnll ch........lstlc
I
SFH203
\
°
3SO 400 450 500 $50 600 &SO 700 750 800 mm
-1
...
Iw. .1(.,)
Powtrdllllpdlon Ptot-/(T... )
350
I'w_
LSD
200
,so
,ao
so
310
R.... 8IICIW
1\
\
RUI-lDOklW
\
litronix
BPX48
A Siemens Company
DIFFERENTIAL PHOTODIODE
Package Dimensions In Inches (mm)
t---.~:~
r-
•
g::: -.,
--~~:::~: ., I ;
./ radiation sensitive area
;
(1,10 d,25) .043x .088
A
A
radiation sensitive area
Maximum Ratings
FEATURES
v,
Reverse voltage
Junction temperature
Storage temperature range
T;
7;.tor
Ptot
Power dissipation
• Differential Photodiode
• Plastic Encapsulated, Strip Line
Technique
• Tightly Spaced Diodes For Precise
Positional Indication
Characteristics
(Tomb =
The differential photodiode BPX 48 is
designed for special industrial electronic
applications, such as follow-up control,
edge control, path and angle scanning,
respectively. The individual diodes are
spaced 50 pm apart, thus resulting in a
highly precise positional indication. The
rise and fall times of the photocurrent are
so short that control systems with small
down times can be built up. The silicon
planar method ensures a low dark current
level, low noise and thus very favorable
signal relationships.
~c
I 'C
mW
25°C)
(the data refers to 8 photodiode system)
Spectral sensitivity 1)
Wavelength of the max. sensitivity
Quantum yteld
(Electrons per photon) (' = 850 nm)
Spectral sensitivity (J.. 850 nm)
Rise and fall time of the photo current
from 10% to 90% and
from 90% to 10% of the final value
S
A.SINIII
(RL =1kll;V.=OV)
(RL = 1 kll; V. = 10 V)
Cut-off frequency measured with 8
load resistance (RL = 1 kO; VR :: 10 V)
capacitance
(V, = OV)
(V. = 10V)
Radiant sensitive area
Dart< current (V, = 10 V; E = O)
32 (" 15)
850
0.80
=
DESCRIPTION
10
125
1 -4010+80
50
tr;rf
tr;rf
0.55
Photon
A/W
.500
.150
ns
ns
'.
Co
C,O
A
f,
nA/lx
nm
Electrons
MHZ
40
10
2 x 2.47
l00(.200}
pF
pF
mm2
nA
1) The illuminance indicated refers to unfiltered radiation of a tungsten
filament lamp at a color temperature of 2856 K (standard light A in
accordance with DIN 5033 and lEe pub!. 3Q6..1).
Specifications are subject to change without notice.
311
I
8peotrtllM...Hhrity S· , 1M
In A/W .neII CfU8ntum ,,_Id TJ ... I III
In .1ectroM per p"oton
yJJ
,
n
~,8
1
II V
V
10
-]
-,
10 ItOO
500
BOIl
700
800 900
-!
mlnm
QOOI
_E.
0.5
OPI
5 IlIW
ciftT
Oertc current f~ .. ,(V,,)
T... b'" 25'C
mW
60
150
SO
100
DkId. capaclMnoe ••• function
of rtlvefM volM.. C • , f~)
"
PI"
'"
~ot
1
,
30
0
150
/
0
20
100
0
/
,
0
0
V
20
60
40
80
-'1mb
.........
mm
IY
0
mli-
0
V
/
-v.
0
100 G (
8
10 V
--~
Derkcurrent/A .. trt..,J
Open circuit volM.. Vl .. f (E.I
Short circuit current IK '" , IE,.)
V~=10V
"10,
1.4
mV
SO0
,
4
0
" H-+++-H
0_4 H--++H t-'I-I--+-+--I
3D0
-30-20-10010 20 3040 5060 70
eo oc
I
3D
/
!
100
].I
,
i
100
H-+++-H-+++-H
0.1
V
V
]
,A
50
-..
H-+++-H-+++-H
0.8
lOV
10
,
o
15
50
-1mb
15
100
125°(
--W
~mllrofch.rtlcMrletics
Y
1
;
i
1
I
o 1.1
o
500 _ _ E,
1000 Ix
Ip '" tlVAI
E." perameter
"I
50
["0"
,.......
-~
......
'
0.8
.......
30
[6
lZ50 l~
........
,bl!
l--'
11
o
--
E-~,L
10
20
-- .---1)0405060
70
80 G (
II
0
-'.
---- 1m,
312
t2li~m_1
'U_d~I"'8
500lx
1
, -'"
T.-~"'diocIM
I
,
-
t _ _p
!
II
1000lx
if
20
I
0.4
H
1500Lx
lOV
litronix
BP 104
A Siemens Company
PIN PHOTODIODE
Package Dimensions
I~--L-J+-.L.--~a~
f:::1j\::::~~S"
C~tnod.
f,ome .02
;tt'---'
. ::6
IP.
.
i
. .
.
!
.
__ A,diantSlnuii.. ArA
.088(2,25).088(2,251
"OBI
.1IB
131
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
FEATURES
• Silicon Planar Pin Photodiode
• IR Transparent Filter Plastic Package
• 2/10" Lead Spacing
• High Speed, 10 ns
Maximum Ratings
Reverse voltage
V,
Operating and storage temperature range
Soldering temperature in a 2 mm distance
from the case bottom (t;S 3 s)
Power dissipation (T8mb = 25°C)
Tstor
T,
Plot
20
-40 to +80
230
150'
I
I°c~C
mW
DESCRIPTION
BP 104 is a silicon planar PIN photodiode,
encapsulated in a plastic package, which
simultaneously serves as filter and is transparent to I R radiation. Its terminals are
soldering tabs spaced 5.08 mm (2/10")
apart. Due to its design the diode can easily
be mounted, even on PC boards. The flat
back of the epoxy resin case makes rigid
fixing of the component feasible. Arrays
can be',realized by multiple arrangements.
This urjiversal photodetector is suitable for
diode .Is well as voltaic cell operation. The
signal/lioise ratio is particularly favorable,
even anow illuminances.
Characteristics (T. mb = 25° C)
Spectral sensitivity (VR "" 5 V) (A = 950 nm)
Wavelength of max. spectral sensitivity
Quantum yield
(Electrons per photon) (.l. '" 950nm)
Spectral sensitivity
II 950nm, VR=5V}
Rise and fall time of the photocurrent
from 10%to90%and
from 90% to 10% of the final value
(Rl = 1 kQ; VR = 0 V;)' = 950 nm)
(Rl = 1 k!2; VR = 10 V;), = 950 nm)
Temperature coefficient for I K or I p
Capacitance
(VR= OV; f= 1 MHz; E= 0)
(VR = 3 V;f= 1 MHz, E= 0)
Radiant sensitive area
Dark current (VR = 10 V)
Noise equivalent power
iV, = 10 V}
S
Detection limit
The PI N photodiode is outstanding for its
low junction capacitance, high maximum
frequency, and fast switching times. It is
particularly suitable for I R sound transmission. The cathode is marked by a blue dot.
L1A"mW
0.92
Electrons
Photon
S
0.71
A/W
Ir;/!
Id!
125
10
0.18
ns
ns
%/K
C,
A
/,
48
17
5.06
2 I" 3D}
pF
pF
NEP
4.2)( 10
o·
5.4)( 1012
TC
Co
mm'
14
Specifications are subject to change without notice.
313
em'
401"'25)
950
i .• "' ••
nA
W
/Hz
cm
1Hz
--W-
Relativa spectral sensitivity
S,.,"'f(l)
%
100
90
S~,
t:
- _.-
-T\
-c- r-- Lr
---1---"
I
- - - r-
/...
r- -
--
II
30
-:--r-
10
10
--
800
\~ r
!
1,0
1
i
10'
-1
--
1000
1100
40'
r-1
-~
--r-
900
10-
,
..J
II
700
0-
I,
1\
,
I
Directional characteristic Srel '" f(lf)
flEe)
20-
-r-
---
40
'"
10'
- r-- r~- e--j
60
50
Photocurrent f p
~A
--
~
10'
1200 nm
IplOlleretetyer)
----~
Capacitance c'" f( VR)
pFf=1 MHz;E=O
Dark current fR '" f(VR)
Powar dissipation Plot"" I( T. mb)
pA Tomb'" 25°C; E'" 0
mW
100 ,--,-----,----,-,-,----,----,-,-,
8000 ,-,--,---.----,-,---,----,-,
I,
t
6000
r--t--~--j-_,_+-+.-+-_j
60
[
1
[eli
50 -
100
30
4000
~H
,
'i1
40
125
..
75
20
Iii"
,
d
\i
I"
I
t r
50
~
f
\ i
"
" +
rt~!
10
25
o
I
[lll' lLt
V 20])405060708090
10
10'
---,-"VR
----Tomb
Photocurrent
',p':,o = I( T.mb)
14
-
~--
-
r- -
nA
~~:i-.-
- - --+--
I
- r-- +-
p-
r-
-
_.1
10'
20
Dark current f R = I( T.mb)
VR'" 10V;E"'O
Open circuit voltage
VlV~50
= f(
T.mb)
10'
"
1101
~
0.8
-
r- r-
-
-
10'
r-
-
r-
0.4
0.2
0.6
f-+--f--+--+--+·_- - -
0.4
C-+---+--t--j-t----
0.1
t--+--+--+--+-- t---f--f--- ---- --c-
-
0.6
I
I
_Ll _....J
-])-20-10 01020 3040 506070 80 '[
------ Tomb
~-
r--t--- I
10"
10
40
60
80
--Tomb
314
100 '[
o
10
20
30
40
50 60
70
----.. fumb
80'[
litronix
BPW33
A Siemens Company
PHOTO DIODE
Package Dimensions
R...... s...IIMAni
.I111(U5).,II11(2,151
Dimensions Inside parenth..ls Int In mm
DimenSions outside perenthesls .r. In Inch ..
FEATURES
Maximum Ratings
• Silicon Planar Photodiode
~rage~re_
_
• Transparent Plastic Package
• 2/10" Lead Spacing
• Very Low Dark Current, 20 pA
• High Sensitivity, 50 nA/lx
DESCRIPTION
The BPW 33 is a large area silicon planar
photodiode, which is incorporated in a
transparent plastic package. Its terminals
are soldering tabs, arranged in 5.08 mm
(2/10") lead spaCing. Because of its design
the diodes can also very easily be assembled
on PC boards. The flat back of the epoxy
resin case makes rigid fixing of the component feasible.
The BPW 33 has been developed as a detector for low illuminances and is intendad
for use as a sensor in exposure meters and
automatic exposure timers. The component
is outstanding for high open circuit voltage
at low illuminances. The cathode is marked
by an orange dot.
... vollllgo
v"
1;0..
Soldering tIImporatu... in 0 2 mm _
fromthe _ _ US3.)
T.
- . . diooipatian IT_ - 25'C)
Characteristics
(Tomb os
"""
I~~~+~
230
150
v
·c
·C
IfNI
25°C)
Spec:InII sensitivity u
Zero crose over 21
lEv - 0; T_ = 60'C)
Radiant....aitive .,..
Wavelength of the max. sensitivity
Quantum yield
1 £ _ per photonll' - 800 nml
Spoc:Ir8lsensitivity I' - 800 nml
Rile and loll time of tho photocumont
from 100to 90% ond
from 90% to 10% of the final volue
IIIL =lkD;V.-OV;'= 950nml
IIIL = lkD;V. - 6V;.- 960nml
CopocitIInceCV. = 0 V; E - 01
CV.-3V;E-01
Oarkcumont
CV.=IV;E-OI
Il0l
.. _ _
Tomperature
_ _ of "
S
601l36)
nA/IIt.
So
rnV/pA
A
lO.o&
7.'
As ...
eoo
.......
nm
§!!!!!D
q
0.73
S
0.~7
A/W
t,;~
~;~
2.6
1.0
750
~.
Co
C.
330
'.re
0.2
IV.-1VI
NEP
6.3.10-11
o-...Iim~
D'
6.2.1CJ11
201' 100)
·_tor . .
~.
pi'
pi'
pA
"II(
.l!!..
JRi
tmJPi
11 TMlllumiMnceilN:llcltM ...... toullflHeNd,........ ..................................... .......,..
2861 K IstendMI tight Ain MICOI'dMcewithDIN 604O_EC ...... 3OI-1I.
2J1o ..
Iow.r ....... ........., .............................. ..,.... ........ TM .....
CfOII .... $o ......... lnthlld..........
SpecIfication. oro subJect to chonge without notlc••
315
I
'Y.
...Ietive apectNl .......lvhy
s... .. 'IAI
100
Photocuntlnt Jp
.. ,
iE.1
II [1
/
60
\
\
/
'0'
~-'
40
j
1\
_\
10
400
BOD
""
n-'
lZDDIIfII
I(QI
1)-1
1)-1
1Il1l
ee
I ",.,
I I I ••
0.0001
-E.
I ,'U".
D.01
0.l1li
102
(11
-E,
-X
"
"'Y'
0.1
oW
O.rkcu,..nt fA" f (VAl
pA T.,"~" 25'C E" 0
100
OJ
--
1
103 Ix
""
rrlN/crn 2
5
C.paC"'hce C = f (VAl
f-1MHz;E-O
pf
'OOIl
V
90D
"j '"
150
115
II
60
800
V
1\
100
V
roo
]\
SO 0
Ii
15
50
10
II
15
0(1 2Il]) 40 SIt
-- ...
6(1
60 0
40
7tl 00 90 1000(
o
40 0
II
J1J 0
100
0
0
,,' ,,'
1 2 3 4 5 6 7 8 9 lOV
-'I
Short circuit current fK = f(T" ..bl
0'
'-'
I:::
r-
I
rt-
Wl
'.4
.,
Ii
0'
.6
,6
,
)
,4
1
C0'
- ...
21l
-)0-20-10010 2030 4050 607Il flI°C
4Cl
- ...
60
" I......
"'0.8
"-
06
Q4
1 - -j -
I
o
10
20
30405060
70
IIOO(
- r...
316
80
O
lXIoe
o
10
20
3D 40
- ...
506070
BOor
litronix
BPW34
A Siemens Company
PIN PHOTODIODE
Package Dimensions
RldlantSinlitIVlAm.IOBI2.75)x.l0812.75)
Dimensions Inside parenthesis ara in mm
Dimensions outside parenthesis are In Inch..
CothDdt
FEATURES
• Silicon Planar Pin Photodlode
• Transparent Plastic Package
• 2110" Lead Spacing
• Low Junction Capacitance, :s; 40 pF
• Short Switching Time, 50 ns
• High Sensitivity, 70 nAllx
DESCRIPTION
The BPW 34 is a silicon planar PIN
photodiode, which is incorporated in a
transparent plastic package. Its termi·
nals are soldering tabs arranged in
5.08 mm (2/10") lead spaqing. Due to
its design the diode can also very easily
be assembled on PC boards. The flat
back of the epoxy resin case makes
rigid fixing of the component feasible.
Arrays can be realized by multiple
arrangements. This versatile photodetector can be used as a diode as well
as a voltaic cell. The signal/noise ratio
is particularly favorable, even at low
illuminances. The open circuit voltage
at low Illuminances Is higher than
with comparable mesa photovoltaic
cells. The PIN photodlode is outstanding for low junction capacitance, high
cut-off frequency and short switching
times. The photodiode Is particularly
suitable for IR sound transmission.
The cathode is marked by a blue dot.
Maximum Ratings
Reverse vottage
Operating and storage temperatura range
VA
Tltor
Soldering temperatura
in a 2 mm distance from the case bottom (t:l 3 5)
1i
Power dissipation (T.mb
Plot
= 25°C)
-40to+80
32
IV'C
1 230
'C
mW
150
Characteristics (Tamb = 25°C)
(v. = 5 V)
Wavelength of the max. sensitivity
Ouantumyiekl
(Electrons per photon) (A = 850 nm)
Speclralsonsilivily (A.= 850 nm)
Open circuit voltage lEv = 100 Ix) 11
Spoclral ..ns~ivity "
Open circuit voltage (Ev "" 1000 Ix) "
Short circuit current (E", = 100 Ix) "
S
70(~
As m..
850
"S
0.88
VL
VL
I.
50)
0.60
285
365
6.5
nAJlx
nm
Electrons
Photon
A/W
mV
mV
~A
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
(RL =lkC; V. - OV; A= 950nm)
(RL = 1kC;V. = 10V; A= 950nm)
tr;tf
Temperature coefficient of VL
Temperature coefficient of IK or /p
TC
TC
Capacitance
(V. = OV;f= 1 MHz;f = 0)
(V. = 3V;f= lMHz;E= 0)
Radiant sensitive area
Dark current (VR =10 V)
Noise equivalent power
(V. 10 V)
=
Detection limit
tr;tf
125
60
- 2.8
0.18
no
ns
mV/K
%/K
pF
pF
72
25 (S 40)
7.8
2(S 30)
nA
NfP
4.2 X 1C)--14
.Y:L
D'
6.8.11)12
Co
C,
A
I.
mm2
,fRZ
em"
11 The illuminll'tCe Indiceted men to unfiltelWd radlMion of • tunpteft filament !.Imp 8t • color temperMu.. of
285& K Ist.ndard light A in eccordence with DIN 5030 and lEe publ. 308·1).
Specifications are subject to change without notice.
317
I
.....tfve ....ctral .....ltlvlty
Photocunwnt /p .. , (E.I
S,.,·".I..
'10
Sf
lOa
V
811
\
/
10'_
/
60
\
/
40
\
0/
...Ll-=.IJI.""...Lllililll0~ Ix
10-1 1OC"-LJW1WJ.C,,
400 500 600 700 III 900 1000 111)1111
--E,
_A
0.050.1
QS 1
5 10
--Ee
50 mW
Crii1
Pow.r ditl.lpatlon p.o. '" , tT"mt>1
D.rkcurrent/R='I~I
r...~" 25·C E"" 0
mW
100
"
8000
r::
I,
1
6000
'\
115
"\
.0
J
4000
[\
75
k"
V
zooo
50
15
o
--,.
0 20 Jl 40 50- 60 7C 90 90 100
o
0(
IL
V
a
20
10
30
40'
-~
D.rk current fR '" f Ir...")
VR=10VE=O
0'
.'
1.4
I,
r:H-+++-H-t-+b....
50
0,8
H-+++-H-t-++-+-
0,6
H-+++-H-t-++-+-
.'
0,4
H-+++-H-t-++-+-
0,1
H-+++-H-t-++-+-
.'
f-+HffiHM!H+Hf1lH1+!lIIH
'" f-+HllIH-fll!I!I-'t+Hf1lH1+!lIIH
mf-+Hffi~1*oo-tff~~~
ro f-+HllIH-fll!I!H-lllIlll--'lif!!!II
a 10L.,,wlllJllO.ci,J.UUllJO'l,;-l-llillm'L.,.-llWllIO' v
m'700
." o
CI(
--Tomb
20
Open circuit vo..... vl = f (£.)
Short circuit current I~" f (£.1
"
70
~
"
60 I,
~600
r 500
I,
400
300
~
-)0-20-10 010 20 30 40 506070
-~
I}
50
I
.,
40
'L
"
-.....
I'-..
.6
30
0,4
100
10
,
lOa
t500
1
1
o
o
1000 Ix
318
10
10
][I
40
- ...
5060
7{l. BOoe
40
- ...
6IJ
80
to
oc
litronix
BPX91B
A Siemens Company
PHOTODIODE
Package Dimensions In Inches (mm)
FEATURES
•
Transparent Plastic Package
• :1110' (5.08 mm) Lead Spacing
•
Dlmenlions Inllde oeranthnts ar. In mm
Dlmen.lonl outside parenthesis ar. In inch.
High Blue Sell8ltlvlty,
400 mm = 30% Srel
DESCRIPTION
The BPX 91 B Is a planar silicon photodiode, which Is Incorporated in a
transparent plastic package. Its
terminals are soldering tabs arranged
In 2110' (5.08 mm) lead spacing. Due to
its design, the diode can also very
easily be assembled on PC boards.
The flat back of the epoxy resin case
makes rigid fixing of the component
feasible. Arrays can be realized by
multiple arrangements. The Increased
blue sensitivity with short wavelength
makes the BPX 91 B particularly
suitable for application with high blue
light source.
This versatile photodetector Is suitable
for diode as well as voltaic cell
operation. The signal/noise ratio Is
particularly favorable, even at low
illuminances. The open circuit voltage
at low Illuminances Is higher than with
comparable mesa photovoltalc cells.
The cathode Is marked by a tab on the
solder lead.
Maximum Ratings
Reverse Voltage (VR) . . . . . . . . .. . . . . • . . • . . .. .. . . . . • . . . • . . . •. 10 V
Operating and Storage
Temperature Range (T01 • • • • •.. • •.. • •.. • •. . . • •. ... -40 to +80"C
Soldering Temperature
In a 2 mm Distance from
the Case Bottom (T&), t:s3 s .. . . .. • . .. . .. .. .. . . .. . . .. . . . •. 230"C
Power Dissipation (PIOI)' Tamb =25"C .............•...••.. 150 mW
Characteristics (Tamb = 25 'C)
Photo Spectral Sensitivity (S) . .. . . .. . . • . . . .. .. . . . • .. 50 (2: 35) nNlx
Wavelength of the Max. Sensitivity (}.s max) • . . . • • . . . . . . . • • .. 850 nm
Quantum Yield (~) . . . . . . . . . . . . . . . . . . . .. . . .. .. . . .. .. 0.73 Electrons
PhOton
Spectral Sensitivity (~, X=850 nm ......•....•••..•.•... 0.47 AIW
Open Circuit Voltage (V&)
Ev = 100 Ix ..................................... 380 (2:270) mV
Ev= 1000 Ix .......................................... 480 mV
Short Circuit Current (lid
Ev= 100 Ix ......................................... 5(2:3.5),.,.
Rise and Fall Time
of the PhOto Current (t,;t,)
RL~l kIl;VR=OV;X=950nm ............................. 2.5,..
RL=lkIl;VR=10V;X=950nm ............................ l.0,..
Temperature Coefficient of (V&). TC ..•....•....•.•.••.. -2.6 mV/K
Temperature Coefficient of (lid. TC • . . • . . . • • . . . . • . . . • . • . . •• 0.20/0/K
Capacitance
VR=OV;f=l MHZ;E=O(Col ............................ 750pF
VR=10V;f=1 MHz;E=O(C,ol ........................... 22Op~
Radiant Sensitive Area (A) . . . . .. .. .. . .. . . . . . . . . .. . . .. . ... 7.6 mm
Dark Current (11Il
VR=10V: E=O .................................... 7(:s3OO)nA
Specifications subject to change without notice.
319
I
PHOTOCURRENT Ip = f(Ey)
RELATIVE SPECTRAL SENSITIVITY
Sre,:"fW
%
1.0
S,"
i
V
f- -
D.8
j
0.7
0.5
\
1/
0.4
II
D.3
0.1
,
II
Q6
0.2
\
1/
0.9
~
1/
o
400
SOO 600
700
800
900
1000 nm
-E,
-A
0.005
,0.05""
POWER DISSIPATION
Ptot = fIT8mb)
DIRECTIONAL CHARACTERISTIC
IK=fl\.)
mW
200
r
Po 175
ISO
\
125
1"-
100
75
'-
'\
50
25
o
320
II 20 II 40 SO 60 708090'1000(
--w
litronix
BPX90
A Siemens Company
PHOTODIODE
Package Dimensions
j' _.
.091 (2.3)
.079 (2,0)
I
--,14.02410.61
I
J
.;
•
I
I
L
,I
.liti. f
.02010.51
.01610.41..!
.
,~
.02810,71
I
II~_~_~
.01610.41
177(4,5)~1
.16£! (4,3)
II
O.. S
.03110.81
- .028 (0.7)
Frame
0.2 (&,08)
Radiant Stnsitive Area
0.8) x..(3.2)
Cathode
Dimensions inside parenthesis are In mm
Dimensions outside parenthesis are In inches
FEATURES
• Silicon Planar Photodiode
• Transparent Plastic Package
• 2/10" Lead Spacing
• High Sensitivity, 40 nA/lx
Maximum Ratings
v.
Reverse voltage
Operating and storage temperature range
Soldering temperature in a 2 mm distance
from the case bottom (t:ii 3 sl
Power dissipation
1
T,
Ptot
~C
32
-40to+80
Tstor
230
100
1
'C
mW
Characteristics (T.mb = 25°C)
DESCRIPTION
The BPX 90 is a planar silicon photodiode,
which is incorporated in a transparent
plastic package. Its terminals are soldering
tabs arranged in 5.08 mm (2/10") lead
spacing. Due to its design the diode can also
very easily be assembled on PC boards. The
flat back of the epoxy resin case makes
rigid fixing of the component feasible.
Arrays can be realized by multiple arrangements.
This versatile photodetector is suitable for
diode as well as voltaic cell operation. The
signal/noise ratio is particularly favorable,
even at low illuminances. The open circuit
voltage at low illuminances is higher than
with comparable mesa photovoltaic cells.
Spectral sensitivity 11
Wavelength of max. spectral sensitivity
Quantum yield
(Electrons per photon) IJ.. = 850 nm)
Spectral sensitivity (J.. = 850 nm)
Open circuit voltage lEy = 100 Ix) 11
(Ev = 1000 Ix) 1)
Short circuit current (Ev = 100 Ix) 1)
Rise and fall time of the photocurrent
from 10%to90%and
from 90% to 10% of the final value
(R, = 1 kQ; V. = 0 V; A = 950 nm)
(R, = lkQ; V. =10V; A= 950nm)
Temperature coefficient for VL
Temperature coefficient for IK
Capacitance
(V. = OV;,= 1 MHz;E= 0)
S
AS mall
"
S
V,
V,
I,
tr;tf
tr;t,
TC
TC
(V. = 10V;'= 1 MHz;E= 0)
Co
ClO
Radiant sensitive area
Dark current (VR 10 V; E = 0)
A
I.
=
40(~
25)
850
0.73
nA/lx
nm
Electrons
~
0.50
A/W
360 Ii: 270)
mV
mV
460
4« 2.5)
"A
1.1
0.8
~ 2.6
0.2
"'"'
%!K
500
170
5.0
5 (; 200)
pF
pF
mm2
mV/K
nA
1) The illuminance indic::ated relers to unfiltered radiation of a tungsten-filament lamp at I oolor temperature
of 2856 K. (Standard light A in ac::c::ordance with DIN 5033 and lEe pub1. 30S-t)
Specifications are subject to change without notice.
321
I
........,. '"otre' ••Mltlvttv
'I,
1\
Sf" ~Q9
i
Photocurrent lp '" , IE.)
B..I"'ft,!.)
to
[8
\
II
[7
[6
\
5
4
II
QJ
2
0.1
400
500
600
700 _IDI
_ A900
1tmnlll
0005
o.s
WlS
5MW
eMf
----- E.
'II "',
Dark current
(V,,)
,A
10',,_
120
'.-
I
.0
1'\
"
1'\
1
"-
6il
40
lO'IilM
"' "'
10'
20
o2 4 6
6il
20
-r...
B 10 1114 1619 ZOll 24162830 V
-~
C.pecttenn C .. , I~)
pF
'-1MHz
6<"
10'
I,
Ipn· 1.0
500
400
I
J
.'
I,il
IIII
JOO
10
H-++-6H"'"1'++-H
i IlBH++-H++-H-l
-
,I
;
,
20 0
Dark Gumont I" '" fl1i ..tJ
V,,""10V
nA
i
tt
~H++-H-t
,
i
i
!
.,
O~J-~-L~-L~~
.31)
-20
-1)
20
0 10 lD 30 40 50 60 70 QOot
-~.
8ttG" circuit curre ..t
;!';; .. ,tT....,I
1.2
I,
7U~
\0
t'...
...... _r-
-
I'
"-
~
0.8
Q8
,.
r-....
-f-""~
"
t
0.4
0.4
co,
~
~~
+
--
---
i
1
Q2
10
ZO
30 40
506010
--r...
o
80°C
322
-.~
~I..
o
II-
10
20
30405060
-I70
-----r...b
Boac
40
60
9tl
-"'"
'OJ O(
litronix
BPX93
A Siemens Company
PHOTODIODE
Package Dimensions
.024 (0,6)
.016
:l!r . " '." '. .,
.031 (0,8)----1
.028 (0,7)
.059(1.5)
~
It
,059 (1.5)
I '"
Cathodt / '
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
FEATURES
•
•
•
•
Silicon Planar Photodiode
Transparent Plastic Package
2/10" Lead Spacing
Low Dark Current, 0.5 nA
Maximum Ratings
Reverse voltage
Operating and storage temperature
Soldering temperature in a 2 mm distance
from the case bottom (t:;:; 3 5)
Power dissipation (Tlmb = 25"C)
-55to+80
Tillar
T,
~c
32
V,
1
Ptot
230
75
AS ma)[
81< 5)
850
1
°C
mW
Characteristics (Tomb = 25°C)
DESCRIPTION
The BPX 93 is a planar silicon photodiode,
which is incorporated in a transparent
plastic package. Its terminals are soldering
tabs arranged in 5.08 mm (2/10") lead
spacing. Due to its design the diode can also
very easily be assembled on PC boards. The
flat back of the epoxy resin case makes
rigid fixing of the component feasible.
Arrays can be realized by multiple arrange·
ments.
This versatile photodetector is suitable for
diode as well as voltaic cell operation. The
signal/noise ratio is particularly favorable,
even at low illuminances. The open circuit
voltage at low illuminances is higher than
with comparable mesa photovoltaic cells.
The cathode is marked by a white dot.
Spectral sensitivity 1)
Wavelength of the max. sensitivity
Ouantum yield
(Electrons per photon) (A. 850 nm)
Spectral sensitivity (A. = 850 nm)
Open circuit voltage
lEv = 100 Ix) 1)
lEv 1000 Ix) 11
Short circuit current lEv = 100 Ix) 11
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
=
=
IRL = HO; v, = OV)
IRL = 1 kO; V, = 10V)
Temperature coefficient of VL
Temperature coefficient of II(
Capacitance
IV, = 0 V; f = 1 MHz; E = 0)
IV, = 10V; f= 1 MHz; E= 0)
Radiant sensitive area
Dark current
IV, = 10V;E= 0)
S
"S
VL
VL
IK
nA/lx
nm
0.73
Electrons
Photon
0.50
A/W
3601< 270)
460
0.81< 0.5)
"A
mV
mV
"s
1.1
0.8
-2
0.1
mV/K
%/K
A
120
40
1
pF
pf
mm2
I,
0.51' 50)
nA
tr;tf
tr;'tf
TC
TC
Co
C,o
""
1} The illuminance indicated refers to unfilter,ed radiation of II tungsten filament lamp at I colour lemperawre of
2856 K (standard light Ain Iccordanc;ewith DIN 5033 and lEe pub!. 306-11.
Specifications are subject to cha':1ge without notice.
323
I
........... -....,..,
% .... ·'IA.I
UI
s,.,l9
t
QJ
II
"
III
.'
5
4
III
2
1I
_E.
o
4GO
500 l1li
!til _
8111
_ A900
I0Il ..
_E.
0.05"" "OS" " '; .!!!
cal
DarflCYrrelltJ,."'IVr.1
nA
lD'_ffm~
r"I
f., _ _~
,
10'
1\
IS
-20
40
60
80
.-' o
1lO'C
j
246810121416M120U24162830V
-~
-~
C8peaM8_ C -, IV.)
Darfl current I" .. ,
rI '-UIHz
I~
VA"10V
120 ....."""rTl11TlllrTl"Tl11ll-rrT1llll
I,
I,,,. UI H-t--+::J.,.H"f++-H
1001-+H+IIlH-I'IIIHIJ-+-HI.+
10 HttHlll--tltHlAI-HlIHfltlIII
t
U H+-H-t--t-H-
60
116
40
U
20
D,2
j
W'
xr'
.-
0
.',
~
--,
.'
10',
.-,
·:11·28·11 01l283040506070IIOt
0
--~
•
t-...
--I-
i.......
.......
.....
r-.....
rrr-
r--- .-
r- r-r-
- ---
If-- --
--r-ro
111
20 3D 4050 611 70 III"t
0102030 4050 60 7O"t
-~
-~
324
Ol
60
10
-~
~6
0
20
mOt
litronix
BPW32
A Siemens Company
PHOTODIODE
Package Dimensions
.024 (0,6)
.016 (0,4)
.03110.81
.028 (0,7)-
j
/~~~~---"".~""
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Cathode
FEATURES
• Silicon Planar PhotodiOde
• Transparent Plastic Package
• 2/10" Lead Spacing
Maximum Ratings
Reverse voltage
Storage temperature range
Soldering temperature in a 2 mm distance
from the case bottom (t ::;; 3 51
Power dissipation (T.mb = 25°C)
T,
I
Ptot
:
5510+80
230
100
I
~C
'C
mW
• Very Low Dark Current, 5 pA
Characteristics (Tomb = 25°C)
DESCRIPTION
The BPW 32 is a silicon planar photodiode,
which is incorporated in a transparent
plastic package. Its terminals are soldering
tabs, arranged in 5.08 mm (2/10") lead
spacing. Because of this design, the diodes
can also very easily be assembled on PC
boards. The flat back of the epoxy resin
case makes rigid fixing of the component
feasible.
The BPW 32 has been developed as a detector for low illuminances and is intended
for use as a sensor in exposure meters and
automatic exposure timers. The component
is outstanding for low dark currents andwhen used as a voltaic cell-for a high open
circuit voltage at low illuminances. The
cathode is marked by an orange dot.
Spectral sensitivity 1)
Zero cross over '2)
10 i. 71
nA/lx
iE, = 0 Ix; T= 50'CI
50
~
Radiant sensitive area
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon) (A 800 nm)
Spectral sensitivity (A = 800 nm)
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
A
"smax
1
800
0.73
Electrons
Photon
5
0.47
A/W
1,;1,
Co
C3
1.3
1.0
120
50
"s
"spF
I.
TC
5i> 201
0.2
pA
%/K
NEP
2.1 x 10-15
O·
4.8 x 1013
=
(R, = lkQ;V. = OV; A= 950nml
(R,= lkQ;V. = 5V; A= 950nml
Capacitance (VR = 0 V; E = 0)
(V. = 3 V; E = 01
Dark current
(V. = 1V; E = 01
Temperature coefficient of I K
Noise equivalent power
(V. = 1VI
Detection limit
tr;t,
0.5
mV/pA
mm'
nm
pF
W
v'RZ
cmJFiZ
W
1) The ilLumin.nce indlc.ted refers to unfiltentd radiation of a tungsten filament tam~' lit • color temperature of
2858 K (,tend.rd light A in accord.ncewith DIN 5033 and lEe pl,lbl. 306 11.
21 So is a measure for the lower sPIctral sen,itiYity when the photodiode is used in e.powre meters. The zero cross
over So is defined in the diagram.
Specifications are subject to change without notice.
325
I
PhDtocu....nt I, .. , IE.I
%
100
,-
I/i\
II
\
\
I
0
1\
I
\
0
o
400
1ilII
BOO
I!MII
---X
1100nm
Cepaon.nr=- C" , l\fwl
o.rk current I" = 'IV"I
pA T. ..b=2S"C
pF E-O
40
",
80
60
110 rTT'mIll"Of'ClTDrT
t'
I,
t
I'
I'
I
30
V
I)
2D
I'
110
1-t+Htlllf-l-ttltllk:t-
100
90 I-ttHtlllf-l-ttltlll--t
80
I-ttHtlllf-l-ttltlll--t
70
I-tttHIHtttlH
60
II
50
40
40
3D
I
20
20
PIIOtOcMNnt
- ...
•. .,
t.O
I~/:
60
10
10
0
o IJ
II OC
012
34561
B 910V
10'."_.
(~I
o.rkcun.nt",
pA
2
I,
r
1;2;
~"1V:E=O
.'1~
I
011
I
W. _
III
10 •
10' WLJ-l.---'---L-J,...--L---'---L...J
- ...
o
-30-20-10 0 1020·J040506070IIOt
mV
20
i'"
40
60
II
_ r...
r.....
r....
[6
[4
1-
o
o
t10
20
10-1
700
pll
1500
I,
400
- ...
]040506070 BOOt
326
It
:I
300
100
11
Jl"
Jl"
100
It'"
loo 0 [
DI. .,.m oft... zero orou overSo
r....
10-2
Short circuit current Vl ... .t !Evl
l5Pin circuit voltag. IK = , 1£.1
IJ
1
2
lO- l
---'I
500
-C.
o
Ol)h
litronix
SFH 100
A Siemens Company
PHOTODIODE
Package Dimensions in Inches (mm)
Cathode
RadiantSensitiveAru .343 (8.1) x .10612.7)
Maximum Ratings
Reverse voltage
Operating and storage temperature range
7
-40 . . +80
VR
T,
Soldering temperature in a 2mm distance
FEATURES
from the case bottom It';;; 3 5)
Power dissipation
Tc
230
100
Ptot
V
"c
"c
mW
• Transparent Plastic Package
• 12.7 mm Lead Spacing
• Low Reverse Voltage, 0.1 V
DESCRIPTION
The SFH100 silicon planar photodiode is
supplied for universal applications. It is
especially suitable for operation with
small reverse voltage (approx. 0.1 V) for
the detection of very limited illumination.
The increased blue sensitivity of the diode
lightens application with luminous source,
which has a short wave emission spectrum.
The component is built in a transparent
plastic package and contains solder tab
leads spaced at 12.7 mm.
Characteristics (Tomb = 25°C)
Spectral sensitivity1
Wavelength of max. spectral sensitivity
Ouantum yield
(Electrons per phatanH). = 850 nm)
Spectral sensitivity (X = 850 nm)
Open circuit voltage (E" = 100 Ix)1
(Ey "" 1000 Ix)1
Short circuit current (Ey "" 100 Ix)1
VL
VL
I.
Rise time of the photocurrent
t,
Temperature coefficient for Vl
Temperature coefficient for II(
Capacitance (VA = 0 V; E::;: 0)
Radiant sensitive area
Dark current (VA = 10 V; E::;: 0)
TC
TC
C.
A
As mex
1751;;'150)
800
~
0.88
S,
0.5
370
430
175
1.2
-0.6
0.2
1000
23.5
0.4 « 10)
S
IA
nA/be
nm
Electrons
Photon
A/W
mV
mV
jJ.A
p.
%/K
%/K
pF
mm'
nA
1The illuminance Indicated refer. to unfiltered rltdlatlon of. tungsten·fllament lamp at a color
temperature of 28561(. (Standard light A. In aecordanee with DIN 5033 and lEe pUbl. 306·1.1
Switching Applications
~
Ev
IK
=
EvmaxX175
fEv max In lux -Iv max
A type w,th smalllllput currenl should be used as
operat,onalampllile'
Specifications subject to change without notice.
327
In
nA)
I
Relltiv~ .p~al
.ensitlvity
Open circuit vottage
Short circuit current
fit S",,=f(,\)
mV
100
5,.
Directional characteristic
Vl =f(Ey)
I~ =f(Ey)
JJA
480
90
1 8010
320
/
60
50
It'
1
240
100
40
160
30
60
0
80
/
10
°300
500
700
900
looonm
o/
o
20
200
400
600
--~
1110 1000 Ix
photodiode
(plant reee",,'!!r)
--Ev
Collector·base capacitance
Dark current IR = f
pF C,~fIVR)
(~)
1000 =nmnrr"lTTlmrrmm.-rnmm
Cj
900 1-+14IIRM-HlII~-fjjjllll-H-HlIIII
!8OO
100 1-+14IIRH-HlII~-fjjjllll-H-HlIIII
10'
6OO1-+I~1-+I~~~~~
5OO1-+I~1-+I~~~~~
400 H-ftHHIl-tltHHIl+l\fllIl+ll-tHIIII
111'
3OO1-+I~1-+I~~~~~
200 1-+14IIRH-HlIIlII-l-fjjjlll-H-HlIIII
100 1-+14IIRH-HlIIlII-l-fjjjllll-H-HlIIII
1
6
8
10V
--YR
Dark current 1"""f(T.mb)
Open circuit voltage ~
VL 250
Photocurrent A=t(T,.mb)
V,,=7 V
pA
Short circuit vol
1,2
'If
~=f
(T.mb)
~25
1,1
~
-.¥m
1,0
~,
~,-,-
i"'-
~
I-
_t'-.
r--..
I
I
r-k'
1010
~6
0,4
0,1
20
<10
60
--lamb
8O·C
0,1
o
-30-20-10010 2030 4050 6070 !Il°C
--lamb
328
=, (T.
I
I
r-H-
o
I
I
I
I
I
I
10
20
30
40
5060
70
--lamb
BOGC
mb )
litronix
SFH 200
A Siemens Company
PHOTODIODE
Package Dimensions In Inches (mm)
.,
(5.081
~""'''''
_ _ .D49I1.''I ....
~.
~)n
""'...
FEATURES
Temperature
• Transparant Plastic CaM
• 6.08 mm (2/10") Lead Spacing
Operating and storage temp. range
Soldering temperature in a 2 mm
distance from the case botton It < 3bS)
• Very Lar. Zero Crossover,
1 mV/pA
Characteristics
...20,G> 14)
nAJlx
mVlpA
Asm••
20
2.8
800
pA
mm2
nm
Sa
Forward Current
25"1:; VF • 50 mY)
Radiant sensitive area
wavelength of max. spectral sensitivity
Quantum yield
DESCRIPTION
SFH 200 is a planar si.licon photodiode
incorporated in a transparent plastic
package. Its terminals are solder tabs
arranged in 5.08 mm (2/10 inch) lead
spacing. The diode can also very easily
be mounted on PC boards. The SFH 200
is developed for low luminescence as
receiver for such applications as exposure
meters. The photo component distin·
gui&hes itself by large zero point divisions
and by high open circuit voltage with low
luminescence.
Type Characterization: notch with blue
point. The cathode is marked by a tab
on solder lead.
"I:
S
Zero cross over
a Ix; T. mb •
"I:
230
(T. mb = 25"1:)
Spectral sensitivity'
(E.·
-55 ... +80
T....
(Electron. per pholon)(~ =800 nm)
Spectral sensitivity (). - 800 nm)
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10" of the final value
(RL · , kn; VA· a V;~· 850 nm)
(RL =1 kn; VA=5V;~·850nm)
IF
A
Electrons
~
0.73
S.
0.47
A/W
t,;tf
1.3
1.0
III
III
tr;tf
Photon
Capacitance
(VA' a v; E= 0)
(VA = 3 v; E- 0)
Temperature coefficient for II(
Dark current (VR • 3 V; E = 0)
Co
c..TK
'A
240
100
0.2
20
pF
pF
%/K
pA
1TtMI lIIumln.n~ Indl~ted refers to unfll_Net _'-1:10.1 of • tun..-n-fnament I.mp lit. color
.mp....tu ... of 2866 K. IStM..Mrd n ..t A In III:COnMn~ with DIN 6033 .nd lEe pubt. 308-1.1
Specifications are subject to change without notice.
329
I
R_ _ _ -tIwIty
DI_oI ..._rlotic
SM,-'(A)
%
.00
1,=f(.)
If
II \
1\
\
II
60
II
'0
I
\
II
20
\
0
I0Il
&IJO
&IJO
-.
IIlIIl
.200 ..
~I
oPis'
10'
10'
'I)'
_E,
,.
_E, •
(..... 1KeMI'1
II
lIIOI '~
-
10' ..
'.wk.1
5
I'"
BO
I'
L'-
L'-
,
-7_
~ C-f(V.)
DI.....m of
E_u
pF
220
n' ~
f.
~f ~ ~~~1-+-~-+~1-1
t=
1I01-+I+HINI-+-ItlfIH+Hl!HffHIII
t40I-+I+HIH-ItlfIH+Hl!lI\+ffHIII
1-+-ItlfIH-l-ttilHII-l-Hilll-\-+fHIII
1.
I-tIrtttIIIl-+ttlflll--tttItll-HltHli
1O'l-+IfHlIIl+l+HIl+HHIII+++HIII
IOl-+IfHlIII+I+HII-+HHIII+++HIII
.ol-+1fHl11l+l+HIl-+HHIII+++HIII
OJIH--+-H-+--H--++-~
0,6
H-++H-++H+
0,'
H+t-i-++H-+-H
100
•o
.":.
zero crouover
,--,--111
2.0
'11-.
-v.
.-,
10'
_7_
-JO-ZO-l0 0 102030 40.50607IIIloC
330
So
litronix
BPX92
A Siemens Company
PHOTODIODE
Package Dimensions
i
,:~~;l;:;:,
I
--1 11 ,51 ' 1
14,31
in
I .,;
0 , , 5 ' . , ~U
0471
ii l'21
~
;;
. .
~ f,
__
-
.177!4.51~1
-fr".'69
.059
~t ~
cto,- ---, ,079121
~. ,",07111,81
1
!S
I
c:i . "
i !;~2<:O 1.020
~ ~ i
I.
'IL:
.043 (1,1) J-
I
.035 (0,9)
.--i--.Ot4 10,351
__ • - .008 (0.2)
.020 (0,5)
I
:g~~ 19:~l-..J
J
I_"~,j'
"J0
i!:::-
lOt61o,41
Anode
..
,138'13,51
8131
Frame
D.215,08}
,/
i ~~'
'.
1
'" t
Radiant Sensitive Area .039 (1.0) x .059 (1,5)
•
----
Cathode
'
Dimensions Inside parenthesis are in mm
Dimensions inside parenthesis are in inches
FEATURES
Maximum Ratings
V,
Reverse voltage
• Silicon Planar Photodiode
• Transparent Plastic Package
• 2/10" Lead Spacing
• Low Dark Current, 1 nA
Operating and storage temperature
Tillar
Soldering temperature in a 2 mm distance
from the case bottom It ~ 3 51
Power dissipation (T.mb = 25°C)
T.
Plo.
1
- 55 to
32
230
50
+ 80
1
~C
'C
mW
Characteristics (T. mb = 25°C)
DESCRIPTION
The BPX 92 is a planar silicon photodiode,
which is incorporated in a transparent
plastic package. Its terminals are soldering
tabs arranged in 5.08 mm (2/10") lead
spacing. Due to its design the diode can also
very easily be assembled on PC boards. The
flat back of the epoxy resin case makes
rigid fixing of the component feasible.
Arrays can be realized by multiple arrange·
ments.
This versatile photodetector is suitable for
diode as well as voltaic cell operation. The
signal/noise ratio is particularly favorable,
even at low illuminances. The open circuit
voltage at low illuminances is higher than
with comparable mesa photovoltaic cells.
Spectral sensitivity 1)
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon) (}.. =: 850 nmj
Spectral sensitivity (A = 850 nm)
Short circuit current
(Ev = 100 Ix) 1)
(Ev = 1000 Ix) 1)
Open circuit voltage (Ev = 100 Ix) t)
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
(RL =: lU; VR = OV; A = 950nm)
(R L = 1!l; VR =: 10V;A =: 950nm)
Temperature coefficient of VL
Temperature coefficient of IK
Capacitance
(V, = OV;I=IMHz;E= O)
(V, = 10V;I= lMHz;E= O)
Radiant sensitive area
Dark current
(V, = 10V;E= O)
5
7 « 4)
850
5
0,50
nNlx
nm
Electrons
Photon
A(W
VL
VL
IK
325 « 240)
410
0,7 (> O,4)
"A
tr;t,
1.1
0,8
- 2,6
0,2
AS max
0,73
tr;tf
TC
TC
mV
mV
"5
"5
mV/K
%/K
pF
pF
A
90
23
1.5
mm2
I,
1 (' 100)
nA
Co
C10
1) The illuminance indicated refeMl to unfiltered radiation of a tungsten filament lamp at a colour temperature of
2856 K ~standard light A in accordance with DIN 5033 and IEC publ. 306-1).
Specifications are subject to change without notice.
331
I
P'tIotocurrent /p = , (E.)
RtI'atlve apectra'.Hnaltlvlty
Directional ch.,.cterlstlc 11<, .. , ,.,
S,.I;O«('\')
%
']
1\
S", 09
i no
1/
1/
01
6
\
5
4
!I
3
1
1
400
500
600
700
800
900
l000nm
QOO5
mW
Pow., dinipetion P
IG1 " ,
O.ll5
_E.
0.5
SmW
Cij
1.,._
-
IT• .,b)
.'II1II
nA
M ro-,-,,-,-,,-r-ro
.'
..
20
- ...
40
60
80
o2 4
KlOoe
6 B 1112)1. 1618 20 2llfo262830 V
-~
Daltl current J" - 't~
Capecltllnc. C = f (Yr.)
~
10
11 0
,f
0
,I
0
0
10'._
"I
0
0
iii
III
III
-J)
Ii' ~I/---,----,----,-~~---,----,---~
- ...
20
-20 -11 0 10 20 30 40 50 60 70 110°1;
1,1
"
~.
to
f'."
J..-...-+-
l"'-
l-
f'."
IlJl
.......
06
06
0.4
0.4
C-- .
r--
i - - r--
e-- l e- ,- I -
e-1.
0.1
1-,
o
o
10
20
lD 40
- ...
50
607£1
o
BOOt
332
10
20
- ...
r--
30 4050 6070 IKJOt
40
60
...
90
OJ 0(
litronix
SFH 205
A Siemens Company
PIN PHOTODIODE
Package Dimensions In Inches (mm)
ArN not clHr
CltltDdl
~!
11 ~
-
-
.020 fUI" .01' fO.461
,0'610.41 .0'410.351
l' /--.i-
i!~::i~r=r-b-=:=l-=:t=-j~,:~,~l:~ tj~
J
.57141'-----,646116.41._
,
~,634116.1I-
R ' - _ I w _ (2,711. 12,7&1
.1118 le"OJ
A
R'1JII12'51
.l1li412.41
•• 57141
"&O13~1
Maximum Ratings
Reverse voltllJl
Operating and storage temperature range
Soldering temperature in a 1 mm distance
V
VA
20
To
-40 ... +80
'c
TL
p...
230
160
'c
Spectral sensitivity' (VR - 6 V)
S
60 (;>30)
Wavelength of the max. senSitivity
Quantum yield
(Electron. per PhotonHA • 960 nm I
Spectrall8nsitivity (A· 960 om)
Open circuit voltage
(E.' 0.5 mW/cm'. A - 950 nm)
(E.' 0.05 mW/cm'. A - 960 nml
Short circuit current
(E. - 0.05 mW/cm~ A - 960 nml
Rise and fall time of the photocurrent
I.sm..
960
mW
nm
f/
0.74
Photon
S.
0.57
A1W
VL
VL
327
248
mV
mV
1.
2
/AA
t,;tf
tr;tt
from the cae bottom (t < 3 .1
Power dissipation (T. mb " 25CC)
rrtN
FEATURES
• Black Plastic Encapsulated Package
• 2.54 mm (1/10") Laad Spacing
• Built in Day Light Filtar
• Suitable for IR Sound Transmission
DESCRIPTION
The SFH 205 is a silicon planar PIN photo·
diode, which is incorporated in a plastic
package which simultaneously serves as
filter and is also transparent for infrared
emission. Its terminals are soldering tabs
arranged in 2.54 mm (1/10") lead spacing.
Due to its design, the diode can vertically
be assembled on PC boards. Arrays can be
realized by multiple arrangements. This
versatile photodetector can be used as a
diode as well as a voltaic cell. The signal/
noise ratio is particularly favorable, even
at low illuminances.
The PIN photodiode is outstanding for
low junction capacitance, high cut·off
frequency and short switching times. The
photodiode is particularly suitable for I R
sound transmission and remote control.
The cathode is marked by stamping at the
case edge.
Charactaristics (Tamb =25"c)
from 10% to 90% and
from 90'6 to 10% of the fin,l value
(RL -1 kfl; VR' OV; A- 960 nml
(RL - • kfl; VA -10V; A - 960 nm)
Temperature coefficient of VL
Temperatura coefficient of IK or Ip
TIC
~ltanOI (VR -
Radiant sensitive area
Co
A
Dark current (VA • 10 V)
lA
125
60
-2.6
0.18
72
7.6
2«30)
NEP
4.4 x 10-'4
o·
6.3.10"
0 V; f· 1 MH.; E • 01
TK
~
Electrons
no
n.
mViK
%lK
pF
mm'
nA
W
Noise equivalent power
(VA -10VI
Detection limit
Viii
cmViii
-W-
'TtM illuminance Indic:Med rete,. to unfllUlrtld r.n.tlon of • tun...., fllamllntl.mp at a oolor
tem.....tuN of 2858 K (IUIndard light A In accordance with DIN 5030 and lEe publ 3.·1).
Specifications are subject to change without notice.
333
I
Relative spectral sensitivity
Photocurrent
% S.er=f(A)
100
..
i
I,
I
I
.0
40
\
20
'.11
10
10'
\
1\
10
10. . . .
f\
II
700
10' • •
1
I
II
1O
S.er=f(lp)
"
1/1\
S 90
'0
70
Directional characteristic
[,,=f(£.)
i.=950nm
800
900
'1000
1100
_E.
1200nm
--~
Power dissipation
Dark current
P,ot =f( T""I> )
mW
200
I
I
Plot \75
J
J
r \50
N
125
\"
100
: i
i I
75
50
I
I
V
100 0
i
Capacitance
i
•
20 lJ 40 50 60 708090 loOO(
10
Photocurrent ~
C =f ( V,,)
"'f( T_ b
1,4
t~
I
0,8
H-++++-H-+++1
50
I., • •
10'
0,6
40
1\
)0
0,4
20
0,2
o
102
10 1
100
10'
-'A
[~=f( T"'b )
V~=10V;E=O
10' _ _
70
60
10 V
Dark current
nA
II
II
90
15
)
pf (=1 MHz; E=O
c
V
V
••:
25
100
V
1000
i
I
I
o ()
0
i
! I
v
V
!
, N.
'
[~=f( V,,)
pA ' ..... 1> =25"C; E=O
4000
-J()-ZQ-1O
010 20 3040 5060 70 00 0(
--'--
334
litronix
SFH 206
A Siemens Company
PIN PHOTO DIODE
Package Dimensions in Inches (mm)
Radiant Sensitive Am
(~.~:l K (i~~:1
Anoda sid' (mlrt)
Maximum Ratings
Reverse voltage
VR
T,
20
-40 .. +80
Tc
Ptot
230
150
Spectral sensitivity1 (VR '" 5 VI
S
501;;'32)
Wavelength of the max. sensitivity
Ouantum yield
~Sm.x
950
Operating and storage temperature range
Soldering temperature in a 1 mm distance
from the case bottom {t" 3 51
Power dissipation (T. mb :: 25~1
V
"c
"c
rrlN
FEATURES
• Black Plastic Package
• 2.54 mm 11/10") Lead Spacing
•
Built in Daylight Filter
DESCRIPTION
The SFH 206 is a silicon planar PIN photo·
diode which is incorporated in a black
plastic package that serves as a filter for
infrared radiation. Its terminals are solder
tabs arranged in 2.54 mm (1/10") spacing.
Due to its design the diode can vertically
be assembled on PC boards. Arrays can be
realized by multiple arrangements. This
versatile photodetector can be used as a
diode as well as a voltaic cell. The signall
noise ratio is particularly favorable, even
at low illuminances.
The PIN photodiode is outstanding for
low junction capacitance, high cut off
frequency and short switching times. It
is particularly suitable for IR sound
transmission and remote control. The
anode is marked by stamping at the
case edge.
Characteristics
0.74
(Electrons per Photon)(X "" 950 nm)
J.I.A'
em·
mW
nm
Electrons
Photon
Spectral sensitivity IX:: 950 nm)
Open circuit voltage
IE. '" 0.5 mW/cm~ X '" 950 nm)
IE.:: 0.05 mW/cm2, X:: 950 nm)
Short Circuit current
SA
0.57
A/W
VL
VL
327
248
mV
mV
IE. "" 0.05 mW/cm 2, X '" 950 nm)
IK
vA
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
(RL : 1 kU; VR : 0 V; X· 950 nm)
IRL : 1 kU; VA: 10 V; X: 950 nm)
Temperature coefficient of VL
Temperature coefficient of 11( or Ip
Capacitance (VR ::: 0 V; f:: 1 MHz;.E:: 0)
Radiant sensitive area
Dark current (VR ::: 10 VI
Noise equivalent power
(VR:l0V)
Detection limit
tr;tf
125
tr; t,
TK
TK
Co
50
-2.6
0.18
ns
ns
mViK
72
%/K
pF
IR
7.6
2 (<: 30)
mm'
nA
NEP
4.9 x 10- 14
D'
5.6 x 1012
v'Hz
em v'Hz
A
~
W
'Tha lIIumlnanc:e Indicated raf.r. to unfiltered radiation of • tun~ten fnamant lamp I t . color
temperatura of 2858 K (Itandard light A in accordance with DIN 5033 and lE.e publ. 306-11,
Specifications are subject to change without notice.
335
I
nolltl.. -.oIlOfIIi,lylty
Directional ch.rlcteristic s .. ,=/(/p)
Photocurrent 1" =/(E.)
% $ .... 1(.1.)
100
1/1\
r:
II
'IV
\
II
60
50
I,G
1\
\
I
10
I
20
1\
10
~
J
_t,
Power dinlPltion
mW
Plot
-I (
-1_
Dark current I,. ""/( 'I,,)
r.... )
,A T..... .. 26"C; E .. O
200
1/
I,
"r 150
175
1\
125
1\
mo
V
2000
1\
75
V
V
V
V
50
1000
V
25
DD20JJ<05060708090lOII'C
15
10
20V
- 1...to
Photocu,,.nt
CapHiunce C""/(V"I
pF
t;;",f( T...... )
f=1 MHz; £,.0
O.rkcurrent
nA
100
1,,=/(7_)
,,=10V;E=O
m'
1,4
I,
r::
90
10
10
-i
10
I
!--
!--
0,8
I,G
0,6
10
0,4
I
,J
-+!
50
I
0
'"
10
0
10"'
to'"
..
_
10'
v,
0,2
-lO -20-m 0
» 20
lO <0 50 60 1II 80 't
- T_
20
I,()
60
80
- - T_
336
110
O(
litronix
SFH 206K
A Siemens Company
PIN PHOTO DIODE
Package Dimensions
Radiant Slnsilive Aril
(2~~:) x (2~~:1
Anod. sida (m.rkl
Dimensions inside parenthesis .r. in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
Reverse voltage
VA
Operating and storage temperature range
Soldering temperature in a 1 mm distance
from the case bottom (t <; 3 5)
Power dissipation (T. mb :: 25't1
T,
TL
Ptot
20
-40 ... +80
V
"c
260
150
"c
nA/lx
nm
Electrons
mW
FEATURES
• Colorless Plastic Package
• 2.54 mm 11/10") Lead Spacing
• Suitable for I R Sound Transmission
DESCRIPTION
The SFH 206K is a silicon planar PIN
photodiode wh ich is incorporated in a
colorless plastic package. Its terminals
are solder tabs arranged in 2.54 mm
(1/10") spacing. Due to its design the
diode can vertically be assembled on PC
boards. Arrays can be realized by mul·
tiple arrangements. This versatile photo·
detector can be used as a diode as well as
a voltaic cell. The signal/noise ratio is
particularly favorable, even at low
illuminances.
The PIN photodiode is outstanding for
low junction capacitance, high cut off
frequency and short switching times. It
is particularly suitable for I R sound
transm ission and remote control. The
anode is marked by stamping at the
case edge.
Characteristics (Tamb = 25°C)
Spectral sensitivity1
5
Wavelength of the max. sensitivity
"'sm ••
70 I;' 50)
850
Quantum yield
(Electrons per photon)().,
~
0.88
5,
0.60
A/W
VL
VL
IK
285
365
6.5
pA
tr; tf
125
50
-2.6
0.18
72
7.6
2 Ie; 30)
=850 nm)
Spectral sensitivity (X:: 850 nm)
Open Circuit voltage
IE. = 100 Ix)l
IE. = 1000 IX)l
Short circuit current lEv:: 100 Ix)1
Rise and fall time of the photocurrent
from 10% to 90% and
from 90% to 10% of the final value
IRL ' 1 kil; VA =0 V; A=950nm)
IR L '1 kil; VA' 10 V; A = 950 nm)
Temperature coefficient of VL
Temperature coefficient of I K or Ip
Capacitance (VR :: 0 V; f:: 1 MHz: E'" 0)
Radiant sensitive area
Dark current (VR :: 10 V)
Noise equivalent power
(VA - 10 V)
Detection limit
tr: tf
TK
TK
Co
A
IA
NEP
4.2 x 10. 1-
O·
6.6 x 10'2
Photon
mV
mV
n.
ns
mV/K
%/K
pF
mm'
nA
W
v'Hz
cmv'Hz
-W--
'The lIIumln.ncelndlcatDCI refe'l to unflltereel radi.tlon of a tun"ten filament lamp at a color
temper.tura of 2866 II: (Itllndard light A In accorct.nca with DIN 5030 and lEe pub!. 308·1).
Specifications are subject to change without notice.
337
I
% Relativ.spectral
sensitivity
Directional characteristic 5,., =(11')
Photocurrent I" =( (Ev)
S •• l=().)
"
OD
,ID3
100
II
Srel
1 80
100
\
/
60
20
1\
\
II
40
10'
/
°400 500 600 700 800 900 1(0) 1100nm
--~
II''''''
0J)5 0,
05 1
A Dark current I,,=(v,,)
T.~.-2S'C· £-0
-
.
....
mW Power dinipation p. ot =( T""b
p
200
I,
'i,'75
r--
125
V
l-
150
100
75
V
V
2000
r--
II
1/
/
50
1000
V
25
I
,5
011 20 II 40 50 60 10 SO 90 1000(
Capadtance C""(
VII)
Dark current 1" =( Tomb
Photocurrent ~=f T""b
pF f""l MHz; £=0
~ rrnrnr>Trn~~rnrrmm
,.
10'
I,
1~'1M.
IlP2S 1.1
'O~~*-~~~~-H~
~~~~~~~~~~
1,0
~~~~~~~~~~
O,B
50 I-+~HMIH-tttI~Htt~
30f--t1~f--t1~~~~~
11
0,4
2oI-+Hffi*-~~+A~-H~
10' . .
0,1
wl-+~~~IH-tttI~~~
o LLlllltttL.L.LLW"--'..LlltlttLLLUlUI
'JI
10" LJ--1J-L-L...L...LLLJ
'll'lO-~
'102 y
10'
-V,
0
~
o
20 30 40 50 60 70 80 'C
20
Open circuit voltage v l =f(E.)
mV Short circuit current II<. ""f(E.)
Open circuit voltage
"
10
Ut
Um
2
1
1.0
60 I,
"t 600
500
1/
400
t---
1
50
I,
08
40
V~~D =(
Tomb
t--..
f'
t--..
"
l'
0.6
Ut
300
30
I
1/
0,4
20
2
10
I0Il
500
--E.
1000
o
0 0 '0 20 30 40 50 60 70 8O'C
Ix
--T~.
338
40
60
80
- T...b
-Tomb
700
200
1/
10'
0,6
40 I-+~HffiIIH-tttltlt-Htt~
10-1
~~V~"~~'~o~v!;~E~,o!!~~~
1.4
9Of--t1-tll111-+ttlHllf--++HlIII--+HllIII
10-2
20 V
-u,
-_T~.
DI 'C
litronix
SFH 204
A Siemens Company
SILICON FOUR QUADRANT PHOTODIODE
Package Dimensions in Inches (mm)
.14 (3.5)
.12 (3)
CONNECTOR SCHEME
6
4
5*2
1 3
DIODE SYSTEM WITH
LIGHT SENSITIVE SURFACE
I
MEASUREMENT IN I'm
FEATURES
•
•
•
•
Miniature size
Four quadrant active sections
Close spacing of contacts, 12 Ilm
Can determine if and by how much a
light source has deviated
Maximum Ratings
Reverse voltage
VR
12
V
Junction temperature
1j
80
'c
T,
Ptot
-20 .. . +80
40
'c
Asm.x
S
S..
850
0.11 (;;. 0.08)
>0.35
0.Q1 I.. 2)
nm
nA/lx
A/W
nA
C,.
Co
2.5
1.5
pF
pF
tr; tf
tr; tf
p.s
p.s
A
2
4
4x 0.01
121;;'10)
p.m
L;.S
<20
%
Soldering temperature in a 2mm distance
from the case bottom {t :(; 3 5)
Power dissipation
mW
Characteristics (Tamb = 25°C)
Wavelength of the max. sensitivity
Spectral sensitivity
Spectral sensitivity (X = 850 nm)
Dark current (VR = 10 V; Tamb = 25't; E", 0)
IR
Junction capacitance
IVR = OV; f = 1 MHz; E = 0)
IVR =10V;f=IMHz;E=0)
Rise and fall time of the photocurrent
DESCRIPTION
The SFH 204 silicon planar miniature four
quadrant photodiode has application in
edge drive, positioning, and path and
corner scanning control devices. The active
units are spaced at only 121lm apart from
individual contacts. It is therefore possible
to get exact positioning with high definition.
from 10% to 90% and
from 90% to 10% of the final value
IRc = lkn; VR = 0 V; ~ = 950 nm)
IRc = lkn; VR = 10 V; ~ = 950 nm)
Radiant sensitive area
Distance between radiant sensitive areas,
breadth of the cross-shaped geometry
Maximum deviation of the spectral sensitivity
of the four systems from the mean
Specifications subject to change without notice.
339
mm 2
Power Dioolpotion
mW p t • t = f (T.mb)
80
~
t--
r-..
40
""-Rt h18mb;; 350K/W
~
20
o
"r--..
"\
L-
10-'
40
20
60
/JO"C
-"-b
Reletl... _ctr.l_noltlvlty
% Srel-f(l)
....otocu.....nt 1,=f(E.,)
nA
v"
J
\
100
90
s...10
10'
II
t 70
60
lL
50
40
30
~
t'
/
1
\
I
I
I
20
1/
10
o
400
tV
600
100
1000
10
nil
1
--E.
10
100
--.I.
OpenclrcultvoHap VL
• ...,.olrcult ......t lK
1000 Ix
= f (Ev)
= f (Ew)
mY
500
nA
V-
300
V-
II
200
i--- .....
1/
1/
1/
L
V
50
V
1/
100
0
I
/
o
500
1000 Ix
":"'-Ev
340
PHOTOTRANSISTORS
Package
Type
n
3mm
Plastic
Package OutUna
V
I
n%
5mm
Plastic
~.~
Similar
to TO-1S
Plastic
:
:
TO-1S
Flat
Glass Lens
;
TO-1S
Round
Glass Lens
TO-18
Flat
Glass Lens
Similar to
TO-18
Round
Epoxy Lens
~
Miniature
lmm
Miniature
Plastic
2 Diode Array
3
4
5
6
7
8
9
10
35
342
BP103B-l
1.6-3.2
35
343
50
345
50
351
50
353
32
355
15
357
30
347
8Pl038-2
16°
8Pl03-1
8Pl03-2
8Pl03-3
2.5-5.0
60°
.16-.32
.25-0.5
8Pl03-4
0.4-O.S
.63-1.25
8PX38-1
0.4-O.S
SPX3S-4
~
1.6-3.2
2.5-5.0
4.0-S.0
6.3-12.5
1.25-2.5
2.0-4.0
3.2-6.3
A
A
~
8PX3S-2
SFH500
40°
20°
SO
60°
LPT100
LPnOOA
.63-1.25
1.0-2.0
0.7
>0.2
30°
1.0-3.0
LPT1008
1.3-2.6
LPnl0
>0.2
LPTll0A
50°
LPnl08
SFH305-2
Page
4.0-S.0
6.3-12.6
8Pl038-3
BP1038-4
BPX43-1
BPX43-2
8PX43-3
BPX43-4
8PY62-1
BPY62-2
8PY62-3
~~
~
1.0
1.6-3.2
~{D
~
SFH309
~
b
TO-18
Flat
Epoxy Lens
Collector
Emittor
Voltage
VCEo(VI
Acceptanca
Half Angl.
SPX3S-3
:
Similar to
Photo Curnnt
VCE-5V
EV-l0G0lx
(mAl
Part Number
0.6-1.8
0.B-l.6
16°
1.0-2.0
1.6-3.2
32
361
8PXS,.,
8PXSl-2
BPX81-3
BPX81-4
18°
.63-1.25
1.0-2.0
1.6-3.2
2.5-5.0
32
359
BPX82
BPX83
BPX84
BPX85
BPXB6
8PX87
BPX88
BPX89
18°
.32-1.0
SFH305-3
8PX80
341
32
359
I
litronix
SFH·309
A Siemens Company
T1 SILICON PHOTOTRANSISTOR
ADVANCED INFORMATION
Package Dimensions In Inches (mm)
.13
(3.3)
.026
(.65)
(31)
(~
t -~
.114
146
(029)
(02.7)
(37)
.106
.138
Cfs)
.268
(6.8)
([4)
fiTl---i--+ .252
.018
(0.45)
(0.3)
---*I
.012
o26
(65)
I
~'.---'--->.,,---'-
III
(50)-.j~
.02
FEATURES
•
3 mm (1'1) Size Package
• .09 Inch (2.3 mm) Lead Spacing
• Low Coat
•
Matches with SFH·409
Infrared Emitter
Characteristics (@25
CATHODE
.09
(2.3)
·e)
Photo Current (Vee = 5 V; E, = 1000 Ix)
Ip
1 mA
Collector-Emitter Leakage Current
(Vce =30Y; E=O)
Iceo
5 (s 100) nA
Wavelength of the Maximum Sensitivity
~max
850 nm
Switching Time
t,. tf
5(s10)"s
Maximum Collector-Emitter Voltage
VCEO
35 V
DESCRIPTION
The new silicon NPN phototranslstor
SFH-309 Is a low cost component In
the normal 3 mm plastic case.
This component was designed for
preferential use in simple IR light
barriers and for remote control
applications In entertainment
electronics and toy Industry.
Specifications subject to change without notice.
342
litronix
BP 1038 SERIES
A Siemens Company
PHOTOTRANSISTOR
Package Dimensions
Dimensions Inside parenthesis are In mm
Dimensions outside parenthesis are in inches
Maximum Ratings
FEATURES
• Silicon NPN Epitaxial Phototransistor
•
•
•
•
•
Low Cost
T 1'l4 Package
Clear Plastic Lens
Narrow Acceptance Angle 16°
Very High Gain, Up to 56 mA
DESCRIPTION
BP103B is an epitaxial NPN silicon photo·
transistor of high sensitivity. It is enclosed
in a tubular 5 mm all·plastic package.
The base terminal is not contacted, control
is performed by the incident light. The
collector is characterized by a flattening on
the package base.
Collector-emitter yoltage
Va.
Emitter-Collector voltage
VE80
Collector current
Ie
Collector peak current It:5i 10 liS)
fe.
Junction temperature
T;
Storage temperature
T$tor
Max. permissible soldering temperature (t:5i 5 s) ,.
Power dissipation (T.mb 25°C)
p..
Thermal resistance
Collector junction to air
RttlJlmb
=
35
7
100
200
125
-55 to 80
260
210
V
V
rnA
mA
'c
'C
'C
mW
350
K/W
Iceo
5($1001
nA
A~ mo.
440 to 1070
850
nm
nm
10.8
2.7
0.12
p.A
p.A
A
(RL=1kQ)I)
t.;t!
5 (.. 101
~s
Capacitance
(V",=OV;f=1 MHz;E=Ol
Acceptance half angle
C'"
op
11
16
pF
degrees
Characteristics (T.mb
=25°C)
Collector-emitter leakage current
(V" =·30V; E= 01
Range of spectral sensitivity
(5=0.1 Sm••
Wavelength of the max. sensitivity
Collector base - Photodiode
(E, = 1000 Ix; VeE - 5 VI
(E. '" 0.5 mW/cm 2 ; A = 950 nm; VeE = 6 VI
Radiant sensitive area
!,ocB
fPCB
I
mm'
Rise time to 90% of the final value
Fall time to 10% of the initial value
Grouping is done at E"
=1000 Ix.
Group
8P1038·'
f,
Photocurrent
iVCE=5V;Ev"" 1000 he)
approx./,
Photocurrent
(Vee =5V;E.=20mW/cm2 )
BP103B·2
8P1038-3
8P1038·4
1.6 to 3.2
2.5 to 5.0
4.0 to 8.0
6.3 to 12.6
mA
7 to 14
11 t022
181036
28 to 56
mA
The illuminances refer to unfiltered radiation of a tungsten filament lamp at a color temperature of 2856 K (standard light A in accordance with DIN 5033 and lEe 306-11.lrradiBncs Ee measured with HP radiant flux meter 8334A with option 013.
II measured with LEO l
The phototransistor is mainly intended for
standard applications and for use in auto·
matic electronic flashes. Due to the tubular
plastic shape, it can easily be mounted into
holes and performed plastic sleeves; e.g.
LED mounting assemblies.
=
950 nm
Specifications are sublect to change without notice.
343
._... _ - - - - - -
--
..
_._-_ ...._.._ - - - - - -
Photocurrent I. e functIon of
mA E,orE,; Ip~ f(E,J
R.'ltlve Ipect, •••• n.'tivity
~, Sno·f(A)
100
t
10' _ _
/
Srel 90
V 1\
J
\
\
L
80
70
60
50
20
IImIfll
10.',,_
I[
30
10'
10' _ _
1
40
10
If
\
\
1
\
V
o
400 500 600 700 800 900
10·'
10'
1000 1100 nm
10'
-A
10'
_E,
0
0.050.1
Obaction.1 che,.ctari.tic I p == 1(,)
0.5 1
0
"",,'
5 10
-E.
10' 1.
0
II mW
50 em
CoUector.mitter capacitance
Cc,~f(Vcd
10"
00
pF
12
10"
300
1\
8
50"
"
III"
10"
Ll..=t:5:L.::W::::::E:::t:::.:.LJ
80"
9O"
4
10·'
344
10'
10'
10' V
litronix
Bp·103SERIES
A Siemens Company
SILICON PHOTOTRANSISTOR
Package Dimensions in Inches (mm)
018
(°1
45 )
.110
(28)-1
IIIM~I
~CB
~.RADIATION
SENSITIVE AREA.{....
~BOI6)x.OI6(0.4xo.41
'
=
L
_
cJI~4i~~1
.570
150
~-@!)
Ill9~1
1~2~
i 1Jl4
I. I
.216
~
irrl
15
Maximum Ratings
Collector-Emitter Voltage (V CEO) . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 V
Emiller-Base Voltage (V Eeo) ................................. 7 V
Collector Current (lei. . .. . . . . .. . . .. . . .. .. . .. . . . .. . .. . .. .. 100 mA
Collector Peak Voltage (ICM). t,,10,.s .. " .. '" ............. 200 mA
Junction Temperature (Ti) ................................. 125'C
Storage Temperature (T.tor) ........................ -55 to +80'C
Maximum Permissible Soldering Temperature (T.). t,,5 s ...... 260'C
Power Dissipation (Ptot). T 8mb = 25'C . . . . . . . . . . . . . . . . . . . .. 300 mW
500 KIW
Thermal Resistance Collector Junctlon-To-Alr (RthJamb) .. "
Collector Junctlon·To-Case (RthJCa••) .. 200 KIW
FEATURES
• Silicon NPN Epitaxial
Phototranslstor
•
Modified T()'18 Package
•
Clear Plastic Lens
•
Wide Acceptance Angle, 60·
•
Four Sensitivity Ranges
DESCRIPTIONS
The BP-103 is an epitaxial NPN silicon
planar phototransistor, mounted on a
base plate similar to 18 A 3 DIN 41876
(TO-18) with glass-clear plastic
encapsulation. The plastic cover
provides a wide angle for the incident
light. This angle can also be reduced
by mounting a diaphragm. The emitter
terminal is marked by a small
projection on the case bottom. The
collector is electrically connected to
the metallic case parts. The
phototranslstor is particularly suitable
for use In automatic electronic flashes
with base Integrating circuit and selfexcited (high-frequency) breakdown
voltage generators (see circuit
diagram) and in high Q electronic
instructional toys used in filament
lamp light and daylight, as well as in
combination with GaAs infrared
emitting diodes in small light barriers.
Characteristics (Tamb = 25 ·C)
Collector-Em Iller Leakage Current (ICEO)
(VCE=30V;E=0) .................................. 5(,,100)nA
Range of Spectral Photosensitivity (,)'(S=O.l Smax) ... 440 to 1070 nm
Wavelength of the Max. Sensitivity ('5 max) . . . . . . . . . . . . . . . .. 650 nm
Typical Spectral Sensitivity of the Collector Base Photodiode (Ipce)
Ev = 1000 Ix; VCE =5 V ................................... 2.1 p.A
E.=0.5mWlcm2;,=950nm;VCE=5V .................... 0.55p.A
Radiant Sensitive Area (A) .. . .. . . .. . .. . . . .. . . . . . . . . . . . .. 0.12 mm 2
Rise Time to 90% of the Final Value
Fall Time to 10% of the Initial Value (t,. ttl (RL = 1 kO)1 ... 5 (,,10) ~s
CapaCitance
(Cce>. VCE = 0 V; f = 1 MHz; E = 0 ............. 9 pF
(Cce). Vce=OV; f= 1 MHz; E=O ............ 13 pF
(C Ee). VEe =0 V; f = 1 MHz; E=O ............ 21 pF
Half-Angle (,,) ....................................... 60 Degrees
Group
BP 103·1 BP 103·2 BP 103-3 BP 103-4
Photocurrent
(VCE=5 V;
Ip
160 to 320 250 to 500 400 to 600 ~30 to 1250 p.A
Ev=1000 Ix)
Photocurrent
(VCE=5 V;
0.7 to 1.4 1.1 to 2.2 1.6 to 3.6 2.8 to 5.6 mA
E. = 20 mWlcm 2 ) Ip
Current Gain
IpCE(1) 160
(Ev = 1000 Ix;
450
260
710
V cE =5 V)
Ipca
Collector-Emillerl
Saturation Voltage
(lc=O.l mA;
170
160
160
mV
le=l p.A; E=O) VCE,at 200
(lc=2.5 mA;
150
le=25 ~A; E=O) VCE• at 190
160
150
mV
The illuminances refer to unfiltered radiation of a tungsten filament
lamp at a color temperature of 2656K. (Standard light A in accordance
with D)N 5033 and IEC 306-11).lrradiance E. measured with HP radiant
flux meter 6334A with option 013.
1. Measured with LED ,= 950 nm. (1) IPCE = Photocurrent of transistors;
Ipca= Photocurrent of Collector-Bas is-Diode.
Specifications subject to change without notice.
345
I
Relative Spectral Sensitivity
S,., = f(}.)
Directional Characteristic Ip = 1(1')
~A
'!.
100
10' _ _
/
Srel 90
i
Photocurrent as a Function of
Ev or E,,; Ip = f(Ev)
!\
II
80
I
60
50
30
3~'
3D'
10'
40'
/
40
10'
Ir 10'
\
\
/
70
10'
10'
II
50'
1\
I
:v
50'
70'
80'
70'
\
o /
~~++-1-j 90'
~~~
400 500 600 700 BOO 9D[)
"""bJ.-LC=t=oJ
1000
1000 1100 nm
-A
ODS OJ
Power Dissipation Ptot
=I(Tamb)
5 10
--E,
501!!W.
cm2
Coliector·Emltter Capacitance
CeE f(V eE )
=
~
mW
300
Collector· Base Capacitance
Ces = I(Ves )
pf
J,
14
I
i
I
~ot
I
05 1
l:
'\
·'l
++-'
-t-+"'R
,
100
1
,i
tbJcuse
.R1~Jamb
1\
I
'
\
I
I I
I
100
I
I
I
I
I'
LI
50
I
I
I
I
150 'C
100
10'
10'
~------ 'amb
Emltter·Base Capacitance
CES =I(VES )
Application Example
pf
Vs
14
-o----f
IIII,
t::
II
"-
R3
·40vl----~
i
I
I
18
16
390nF
1\
11
Breakdown voltage-generator
for measuring circuit
10'
10'
W, : 4 turns 0.15 0 CuLS
W2: 1 turns 0.25 0 CuL
W3: 140 turn 0.15 0 CuLS
Interior space of the coil
with SrFERRIT cylindrical core,
material M 25,
inner coil diameter: 11 mrn
346
i
litronix
A Siemens Company
LPT-100/110 SERIES
PHOTOTRANSISTOR
Package Dimensions (in inches)
LPT100/LPT100A/LPT100B
BASE~
EMITTER
~
45°Y
~.OBO
FLAT
COLLECTOR
NOTE: ALL LEADS ELECTRICALLY ISOLATED FROM CASE
FEATURES
• Collector Dark Current 0.25 nA Typ
• Responsivity
0.6p.A/mW/cm 2 Min (Tungsten)
1.8p.A/mW/cm2 Min (GaAs)
LPT110/LPT110A/LPT110B
li
~j
.200
lA
• Photo Current
0.2 mA Min (Tungsten)
0.6 mA Min (GaAs)
•
.113
Rise and Fall Time 2.8p.s Typ
3LEADS
APPLICATIONS
/U oJ
b
.019 OIA
±.003
.
• Position Detector
• Intrusion Alarm Sensor
• Optical Tachometer
JI 0
-II
400 MIN.
,100
.050
BASE~
EMITTER
~
4°Y
BENEFITS
• Flexible Circuit Design
Base Lead Availability
Large Range of Sensitivities
• Greater Power Dissipation - Ceramic
Case
• Reliable - Exceptionally Stable
Characteristics
\.
~
.OBO FLAT
COLLECTOR
NOTE 1: ALL LEADS ELECTRICALLY ISOLATED FROM CASE.
NOTE 2: FLATNESS VARIATION OF TOP OF CUP IS ±.015.
NOTE 3: PHOTOSENSITIVE AREA IS WITHIN A .030 DIAMETER CIRCLE
WITH CENTER OF CIRCLE COINCIDENT WITH THE CENTER OF PACKAGE.
Specifications are subject to change without notice.
347
I
MAXIMUM RATINGS
Maximum Temperatures/Humidity
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° C to + 1ao°c
Operating Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. -5SoC to +8SoC
Relative Humidity at Temperature ..... ............................. .. 98% at +6SoC
Maximum Power Dissipation (Notes 1 and 2)
Total Dissipation at +2SoC Case Temperature ..... " . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Total Dissipation at +2SoC Ambient Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Maximum Voltages (Note 51
BV CBO Collector to Base Voltage ...... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SOV
LV CEO Collector to Emitter Sustaining Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Maximum Current
Ic Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 rnA
OPTO-ELECTRICAL CHARACTERISTICS (25°)
Symbol.
LPT-l00/AlB
Parameter
Min
Typ
LPT-ll0/A/B
Max
Min
Typ
Ma.
Units
Test Conditions
leBo
Col1ector Dark Current
0.25
25
0.25
25
nA
V eB = 10V (Note 5)
leBo (65°C)
Collector Dark Current
0.025
0.5
0.025
0.5
p.A
V eB = 10V (Note 5)
I CEO
Collector Dark Current
2.0
100
2.0
100
nA
VeE = 5.0V (Note 5)
ReB
Responsivity (Tungsten)
0.6
1.6
0.6
1.0
p.A/mW/em 2
V eB = lOV
ReB
Responsivity (GaAs)
1.8
4.8
1.8
3.0
p.A/mW/em 2
V eB = 10V
(Notes 4 and 8)
ICECL)
Photo Current (Tungsten)
0.2
1.0
1.3
1.4
0.2
0.6
0.8
0.88
0.6
4.2
0.6
(Notes 3 and 8)
LPT-IOO and LPT-ll0
"A" Only
"S" Only
'CECL)
Photo Current (GaAs)
tr, tf
Light Current Rise Time
VCE(SAT)
Collector to Emitter
BV cBo
Collector to Base Break-
rnA
rnA
rnA
{VeE = 5.0V
H = 5.0 mW/em 2
(Notes 3 and 7)
2.7
rnA
V eE ·= 5.0V
H = 5.0 mW/em 2
(Notes 4 and 7)
2.8
2.8
p.s
(Note6)
0.16
0.16
V
Ie = 500p.A
H = 20 mW/cm 2
3.0
2.6
1.8
1.6
Saturation Voltage
50
120
50
120
V
Ie = loop.A
(Note 5)
30
50
30
50
V
Ie = LOrnA
(Note 5)
7.0
V
lEe = 100p.A
(Note 5)
down Voltage
LV CEO
Collector to Emitter
Sustaining Voltage
BV Eco
Emitter to Collector
7.0
Breakdown
Note 1: These are steady state limits. The factory should be conSUlted on applications involving pulsed or low duty cycle
operations.
Note 2: These ratings give a maximum junction temperature of +85°C and junction to case thermal resistance of +300°C/W
(derating factor of 3.33 mWrC) anda junction to ambient thermal resistance of +600°CIW (derating factor of 1.67 mWfC).
Note 3: Measured at noted irradiance as emitted from a tungsten filament lamp at a color temperature of 2854° K.
Note 4: These are values obtained at noted irradiance as emitted from a GaAs source at O.9~.
Note 5: Measured with radiation flux intensity of less than 0.1~WJcm2 over the spectrum from 100 to 1500 nm.
Note 6: Rise time is defined as the time required for ICE to rise from 10% to 90% of peak value. Fall time is defined as
the time required for ICE to decrease from 90% to 10% of peak value. Test conditions are: ICE = 4.0 rnA, VCE = 5.0V,
R L = 100 Ohms, GaAs Source.
Note 7: No electrical connection to base lead.
Note 8: 'No electrical connection to emitter lead.
348
TYPICAL OPTO·ELECTRONIC CHARACTERISTICS
FIGURE 2. COLLECTOR
CURRENT VS COLLECTOR
VOLTAGE
FIGURE 1. PHOTO CURRENT
CHARACTERISTICS
;( 10,000
3
I
100/A/~ ?,'0/~~8
100
ffia:
:>
"a:0
1
:;H
.1
I-
~-'
ffia:
10
3
"a:0
2
~
1
~;
I
f-"10.2 ...WI~·
0
12
I-
150 Ie. 7.5 mW/cm2
91-
:>
6
%
'"
:;
lem.
mW/':',
50 fc • 2.5 mW/cm2
~It
3
10
lbo ~. ~ m~/c~'
a:
6.2mWltm1
u
~ fe"
ffi
a:
U
I-
3.9mWlcml
"
I-
I-
8.SmW/<:m1
ILLUMINATION FT. CANDLES
H~§ ~ ~ ~~ '"W"'2
J
~.'l""""I~..,t
0
1.000
<
3
?~1
''i.IP"WICIf'
I-
I.
18
I
~1
:>
11111 I
100
4
T~·I~~~
a:
Til. = 25 D C
1
T,,'U"C
I-
1IIIITe '28M'K
.001
•
I
ICilflVp', ~I~oy
.01
0
"
Ji
~ ILUt
'
50
40
30
w
~
;p.
A
,
,
,
'I":-
LPT·"O
l.-
,
LPT·'OO
.
.
20
I
I
': 1/
-100
-60
-20
20
<
;",000
I
I-
~
a:
,rt'
.
\
60
~CEO. VeE" 5V
10
,/
':\
I.
"
1\
!
,.;:
I
w
-'
-'
;t
3
"3
~
S
i'
20
.1
:l
i!l
iT
loon
1
COLLECTOR CURRENT - Ie (rnA)
.
10
a:
5
9
z
~
I
0
.01
60
80
100
300
10
900
6
:;
.. •
V
I
4
>-
:l
i!l
z
9
z
~CC="2~~C 2
3
4
•
INPUT CURRENT -Ie (rnA)
349
I
V!e
a:
~
6
3
\
2
"-
1
0
-.~
T",'"'25°C-
0
I
1
t,100 1.300
FIGURE 9. TURN-oN
DELAY nMES FOR
CIRCUIT {SHOWN IN
FIGURE 111
'\-1
0
700
500
WAVELENGTH - A (nm)
..-
2.
. I.
I
r- ~~e.:'2:~C
40
FIGURE 8. TURN-OFF
DELAY TIMES FOR
CURRENT {SHOWN IN
FIGURE 111
>-
6
20
0
30
",I.W
r-...
!\
20
TEMPERATURE JOCI
12
9
40
30
1
50
10
0
-20
FIGURE 7. RISE AND FALL
TIME VS COLLECTOR
CURRENT {SHOWN IN
FIGURE 101
21
~a:
.01
100
70
60
;p.
.1
90
80
~w
>
V
1
ANGLE (DEGREES)
18
~
0
V
100
:>
"w
'"'"
;"
I
II
100
10,000
!\
1
2
-- •
3
•
INPUT CURRENT - Ie (mA)
6
TYPICAL OPTO-ELECTRONIC CHARACTERISTICS (CONT.)
FIGURE 10. SWITCHING CIRCUIT
FOR RISE AND FALL TIMES
H
---
FIGURE 11. CIRCUIT FOR TURN-ON
AND TURN·OFF DATA
H-z..
OUT
SOURCE GaAs
350
VOUT
litronix
BPX 38 SERIES
A Siemens Company
PHOTOTRANSISTOR
Package Dimensions
AadianISensitiwArea.034lO,86) x.034 (0,86)
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
Collector-emitter voltage
VCEO
VEBO
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation (Tamb "" 25°C)
Max. permissible soldering temperature It;;; 5 5)
Thermal resistance
Collector junction to air
Collector junction to case
Ie
TJ
Tstor
Ptot
T,
V
V
50
7
50
175
'c
-55to+125
"C
330
260
'C
RthJamb
~
RthJcaSa
~
mA
mW
450
150
K(W
K(W
Characteristics (T. mb = 25°C)
FEATURES
• Silicon NPN Epitaxial Planar Phototransistor
• Premium Hi-Rei Device
• TO-18 Size Hermetic Package
• Flat Glass Lens
• Wide Acceptance Angle, 40°
• Moderate Gain, Up to 14 mA
• Four Sensitivity Ranges
DESCRIPTION
The BPX 38 is a silicon NPN epitaxial
planar phototransistor in an 18 A 3 DIN
41876 (TO 18) case with flat window and
high radiant sensitivity for front irradiation.
The flat window has no influence on the
light paths. It is, therefore, particularly
suitable for industrial applications, where
lens systems are used. The collector
terminal is electrically connected to the
case.
Range of spectral sensitivity
(S = 0.1 Smax)
Wavelength of the max. sensitivity
Collector· base - photodiode
(Ev "" 1000 Ix; VCE == 5'V)
(Ee"" 0.5 mW/cm 2 ; A = 950 nm; VCE == 5 V)
Radiant sensitive area
Capacitance
(VCE = 0 V; f = 1 MHz; E = O)
(VCB == 0 V; f = 1 MHz; E = 0)
(VEB = 0 V; f = 1 MHz; E = O)
Acceptance half angle
Grouping is done at E" '" 1 000 Ix.
Group
450to 1080
'\'Smilx
870
JpCB
4.8
1.2
0.65
"A
"A
23
41
47
40
pF
pF
pF
IPCB
A
CeE
CeB
CEB
~
BPX 38-2
BPX 38-3
mm'
degree
BPX 38-4
Photocurrent
Ip
(VCE = 5 V; Ev = 1000 Ix)
Photocurrent
approx. Ip
(VCE == 5V;Ee'" 20mW/cm2)
Rise time from 10% to 90%
of the fmal value
Fall time from 90% to 10%
of the initial value
(Ic = 1 mA; VCE = 5 V;
RL = 1 kG)l)
tr: tf
Collector-emitter
saturation voltage
(Ic = 2 mA; Is = 50I-lA;
E = 0)
~ VCEsat
0.4 to 0.8
0.63 to 1.25
1.0 to 2.0
1.6 to 3.2
mA
1.6 to 3.2
2.5 to 5.0
4.5 to 9.0
7.0 to 14.0
rnA
8
12
175
175
160
140
Power gain
[PICE)
(Ev = 1000 Ix; VCE = 5 V)
Collector-emitter
leakage current
(VCEO = 25 V; E = O)
ICEO
100
160
250
400
5 (:;; 200)
8 (:;; 200)
12 (:;; 500)
20 (:;; 500)
5
mV
nA
The illuminances refer to unfiltered radiation of a tungsten filament lamp at a colo r
temperature of 2856 K. (standard light A in accordance with DIN 5033 and IEC 306-1).
Irradiance Ea measured with HP radiant flux meter 8334A with option 013.
1, measu.edwlO"
.
~=llil02 V
,
10
o
10'
r--
10'
-VCf
352
.,
, -I'I;--r'-:.1
Jl.:ii '
D:~~-: ti,
10V
litronix
BPX 43 SERIES
A Siemens Company
PHOTOTRANSISTOR
Package Dimensions
J1tt
Rlllion.SlnlilhlA,.
.01' x .016
(.4)
~~::I
t
~!i
(.0)
E
C8
... da
.571 (14.51
.482 (12.&1
.217
(5,51
Dimensions inside parenthesis are In mm
Dimensions outside parenthesis are in inches
Maximum Ratings
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
T,
50
7
100
175
- 55 to
330
260
RlhJamb
RthJease
',450
',150
VCEO
VEBO
Ie
Tj
Storage temperature
r stor
Power dissipation (T~mb = 26 'C)
Max. permissibie soldering temperature (t· 5 s)
Thermal resistance
Collectoi' junction to air
Collector junction to case
Ptot
+ 125
V
V
mA
'C
'C
mW
'C
K/W
K/W
Characteristics (Tamb = 25°C)
Range of spectral sensitMty
(5=0.15"'8X)
Wavelength of the max. sensitivity
FEATURES
• Silicon NPN Epitaxial Planar Phototransistor
• Premium Hi-Rei Device
• T()'18 Size Hermetic Package
• Rounded Glass Lens
• Narrow Acceptance Angle, 20°
• Very High Gain, Up to 70 mA
• Four Sensitivity Ranges
DESCRIPTION
The BPX 43 is a silicon NPN epitaxial
planar phototransistor in an 18 A 3 DIN
41876 (TO 18) case with lens-shaped window for front irradiation_ The special
transistor system in connection with the
lens shaped window provides the transistor
with a particularly high spectral sensitivity.
It is therefore suitable for industrial applications at low illuminances. The collector
terminal is electrically connected to the
case.
A
.t5ma•
Collector base - photodiode
(E. - 1000 Ix; VeE - 5 VI
(E. '" 0.5 mW/cm 2 ; A. = 950 nm; VeE
= 5 V)
fpCB
A
(VeE = OV;I= 1 MHz;E- 01
(Ve. = OV; I-I MHz;E- 01
(VE. - OV;I= 1 MHz;E- 01
.=
~
Photocurrent
I.
(VCE 5 V; Ev 1000 Ix)
Photocurrent
approx./p
(VCE:= 5V;E.= 20mW/cm21
Rise time from 10% to 90%
of the final value
Fall time from jlO% to 10%
of the initial value
I/c:= 1 rnA; VCE "" 5V;
RL=lkUl)
tr;tf
Collector-emitter
saturation vottage
=
11e=2rnA;I.-50.A;
VeEsat
E-OI
Ip!CEI2)
Iplca)
Power gain
"A
mrn'
pf
pF
pF
Degrees
1000 Ix
BPX 43-3
BPX 43-1
BPX 43-2
1,6'03.2
2.5'05.0
4.0'08.0
6,310 12.5
rnA
9t018
1410 28
22'045
35'070
mA
5
6
8
12
.s
mV
Group
=
p,A
23
41
47
20
CeE
CeB
CEB
Acceptance Half Angle
nm
25
7.1
0.65
fpca
Radient sensitive area
Capacitance
Grouping is done at E
45010 lOBO
870
BPX 43-4
175
175
160
\40
85
135
215
345
5 (~2ool
8 (~2001
121SSoo1
20 I~ 5001
IE. -1000Ix; VeE - 5 VI
Collector-emitter
leakage current
IVcEO= 25V;E- 01
lceo
nA
The Illuminances refer to unfiltered radiation of a tungsten filament lamp at a color
temperature of 2856 K. (standard light A in accordance with DIN 5033 and lEe 306-1).
Irradiance E. measured with HP radiant flux meter 8334A with option 013.
1) musuredwith LEDA = 950nm
21/~ (CE, = PhotoC\lrrent ottha phototranliltor
ID .ce," Photocurrent ofthecollector-base photodioda
Specifications are subject to change without notice.
353
I
Reletlve spectral ..nsltiYlty
S, .... '(.l.l
Srli
90
--+4--11--+\+-
~ eo
-----J'+-++---
10
------'iL-t---i-+--
60
-----It-t---+-
(Vce'"SVI
I
m.
-:-j
j
::41)
~/
10'
10'
.,%~
~i'1
~~
Il5
.-
I
--,
---
Ir ,
.-
400 500 600 700 800 900 1000 noD nm
-A
.. ,
,
2
"
/O--I--4-t-+-+-"
PoWwer dissipation ~ot
Directions' chs,.cte~lc Ip "', (Ip)
Photocurrent lp .. f (E.)
.A
10'
fl;;mbl
\0
, Ix
so._
I
Qii2
PhotocurNnt~
Pbotoourrent Ip .. , I\U:I
rnA
10'
350
~t JOO
I
lOOO.!x
I,
lit~~~;l~l
r 250
" Ix
/00
I
150
100
50
25
50
T!-...
15
Dsrk Currtlnt lcEo = ,
100
125
IDO
3~
P,')2
1.1
lOOlx
\0'
loiii
D.B
100 Ix
~
Il5
0.4
0.1
10-2
150
0(
-JJiO-\o 0 10 2030
0510 1520253035404550 V
f,()
50 60 70 110 90 100
(VCE)
D.rk current ICEO = , ("tEl
,-
,
10
""
T. mD
-
paremeter;E = 0
10'
10'
4
r---
~
~1I"t
"1"
I
oc
-r."
-~,
.A
3
=, I~'
E." per.mshtr
I~t
2
IDII"t
,
1
,..
10'
10
511't
10-,
10-,
,
10'
~~
~
Iypicolcurve
__ Iimll curw~·~
[;;
2sot
,
o
1010
20
])
40
50
so
SOV
100
-~,
150
.-
lODoe
-,
ee,= , ("t,I
CCE"'Ut:d
~
C"
21IH+tttM--H+tttHt--HtWf
1
i
40
~
----+ VCE
o
10-'
I
" ""'"
--i-+F
.'v
'0'
354
II V
.......
"
-
25
m,
40
20
211
"
lO
-'"
CEO
-
°m';-,-'-'--llLUJJIl'!;--,-.liJLllill'O,,-'-.LU.IillJ,02V
15
''""
60
i
10
Emitts,-bue cspsclt.8ncs
Cu '" I (VE,I
CoIt.ctw-ba.. capacitlinoe
Co...ctor..mltt.r c.~citlinoe
o
111'
litronix
SPY 62 SERIES
A Siemens Company
PHOTOTRANSISTOR
Package Dimensions
Radiant Sensitive Area
.016 x .016
1.4\
q>(~l:1
t
1.4\
/
EeB
~~~~i.J~~~
:milUI~~
J~
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
Maximum Ratings
Collector·emitter voltage
• Premium Hi· Rei Device
• TO·18 Size Hermetic Package
• Rounded Glass Lens
• Very Narrow Acceptance Angle, 8"
• High Gain, Up to 28 mA
V
V
rnA
'C
·C
mW
K/W
K/W
Characteristics (Tomb = 250 C)
Collector-emitter leakage current
(Vee = 25 V; E= 01
Collector-emitter saturation voltage
(Ie = 1 rnA; Ey "" 1000 Ix)
Range of spectral sensitivity
(5) 0.1 Smell)
Wavelength of the max. sensitivity
ICEO
5(~
Vee..t
0.3
V
Asm.x
43010 1060
800
nm
nm
[PCB
17
3.5
JJA
JJA
1,;1,
A
0.12
1001
nA
Collector-·base - photodiode
:~:: ~~~;e~~~ ~ ~~
[PCB
;
nm; VeE' 5 VI
Rise time from 10% up to 90% of /p
Fall time from 90% up to 10%0f /p
(RL= lkOl'l
Radiant sensitive area
Capacitance
(VeE = OV;/= lMHz;E= 01
(Ve. = OV; /= 1 MHz;E = 01
(VEB = OV;f=l MHz;E= 0)
Acceptance half angle
DESCRIPTION
Grouping is done at Ev
The BPY 62 is a silicon NPN epitaxial
phototransistor in an 18 A 3 DIN 41876
(TO 18) case with a light window for front
irradiation. The base connection is brought
out and the emitter is marked by a small
projection on the case bottom. The col·
lector is electrically connected to the case.
Group
The phototransistor BPY 62 is suitable for
versatile applications in connection with
filament lamp light mainly where particu·
larly sensitive photoelectric detectors are
required.
500
200
T"",
Power dissipation (Tlmb = 75°C)
Thermal resistance
Collector junction to air
CoUector junction to case
• Silicon NPN Epitaxial Planar Phototransistor
RthJlmb
RthJcase
Ie
Tj
Junction temperature
Storage temperature
FEATURES
Ptot
32
5
100
125
-5510 +125
300
VCEO
VEBO
Emitter-base voltage
Collector current
=1000 Ix.
Spy 62·1
Photocurrent (Va: - 5 V;
I,
E, = 1000 Ix;I'1
(VeE = 5V;
approx./p
E. = 20 mW/cm 2
Power gain
mm2
pF
pF
pF
6
10
12
8
CeE
Ce.
CE.
'"
SPY 62·2
I
.s
degrees
BPY 62-3
1.25102.5
2.0104.0
3.2106.3
rnA
5.01010.0
9.0 to 18.0
14.0 to 28.0
rnA
355
560
900
/PICEI2)
/PICB)
(E, : 1000 Ix; Vee = 5 VI
The illuminances refer to unfiltered radiation of a tungsten filament lamp at a color
temperature of 2856 K. (standard light A in accordance with DIN 5033 and IEC 306-1).
Irradiance E. measured with HP radiant flux meter 8334A with option 013.
')mNl1lredwith LED}.." 950nm
(C!, ., Photocurrent oltto. photot... n,;'tor
I. IC') .. PhotOCUmlnt of the collector-bae photodiod.
2)/p
Specifications are subject to change without notice.
355
R.1.tI....ptoctnl ..n.ItI..1ty
s,"~ qAI
Pow.,d... lp.tlonP,.,_
R,._p.ram.ter
PhOIOCII ... nl ••• fIInolionof
E.g,E;;I. - I (E,I
- R\II ....
600
-N++++++t1
~uu~~~m~~,~'
1000 nm
800
I(T.~.)
_E,
---r•...to
O_OS~~.~..1...L..LSWl. L.~OmW
- .. --E r
c,;;1
lube. CU""'I/O[o ~ IWO[I
nA T.... Bp...m.t.';E ~ 0
,.
.'
Outplltcha,acta,l.tlc,/c -liVe,)
V.,:p.r.mete,
O"tp"tch.rlCI.rl.llc.lc - 11\\:,1
loBp.rome'e,
1000
1i"iJi
0
·at
~6lV
I,
3.0j.lA
T-i
00
I~
00 -+
10'
U
00
10'
""
00
0'57V
A
W
D"
00
-O.5j.1A
I
0
+
""
00
1.~~"'.
10'
U.L
J ,.L
1
1
i'
00
DD
3·£~
1
"
OutputCI>.,.ct.,I.lIc.lc ~ IWe.)
mt /. = p •• ametef(emil!efc... c.paclllnc.
Ce.~
11\\:.1
AI.. ti ..... r,· IIR,I
f.1I 11m. I, ~ IIR,)
UIIII~
.1If1
Ifl
rr1
110
-----veE
101y
10 1
10 1
10-1
IO~
-"
\(II V
10 1
10 1
10 I
IO~
"VIe
356
101 V
litronix
SFH 500
A Siemens Company
PHOTO TRANSISTOR
Package Dimansion.
.11012.8)
~.1012.61-..
1
$
ECB
~+t~~ii. ~f§ll~~::~)\ ~~~
L
.571114,5), _
.492112,5)
150 13,8) I--.13B 13,5)
J~
t
.21715.3)
Radiant Sensitive Area
Dimensions inside parenth •• ls are In mm
Dimensions outside parenthesis are in inch ••
Maximum Ratings
FEATURES
• TO-18 Package
• Flat Glass Lens
• Fast Speed, 2 MHz
DESCRIPTION
SFH 500 is a fast NPN silicon planar
photodetector with a frequency to 2 MHz
and a wide range of modulation from 102
to 1Q4 LUX. The 1 X 1 mm chip is
mounted in a TO-1S package with flat
glass lens window. The photodetector is
especially suitable for light wave conductor application through the small cap
body (up to 2 Mbits/s). Also suitable for
industrial electronics and in camera
applications where a wider sensitivity
range is necessary. The case is electrically
connected to the collector.
Collector-emitter voltage
Emitter·base voltage
Collector current
Junction temperature
Storage temperature
Max. soldering temperature (t" 5 s)
Power dissipation (T. mb • 25~)
VCEO
VEBO
Ie
7j
To
Te
Ptot
V
V
mA
15
7
20
100
-55 ... +100
260
100
"c
600
250
K/W
K/W
'c
"c
mW
Thermal resistance
Collector junction to air
Collector junction to case
RthJlmb
RthJc...
I T,.,b = 25'c)
Photocurrent
lVe.·· 5 V; E. = l00c IX)1
IVe • = 5 V; E. - 0.5 mW/cm')'
I.
I.
Wavelength of the max. sensitivity
As mix
Quantum yield
(Electrons per photon)(~ - 850 nm)
Spectral sensitivity (:\ =850 nm)
Collector-emitter leakage current
lVe. = 30 V; E- 0)
Collector·emitter saturation voltage
lIe - 5OO~A; I.· 25~A; E= 0)
Range of spectral sensitivity
IS=O.IS., .. )
Typ. spectral sensitivity of
the collector base photodiode
Radiant sensitive area
Rise and fall time of the photocurrent
Rise time to 90% of the final value
Fall time to 10% of the initial value
IRe = 1 kl1l'
Capacitance
lVe. - 5V; '-1 MHz; E-O)
lVe. = 5 V; '-I MHz; E= 0)
Cut·off frequency
IRe - 501l; V= 12V;I=5mA)
Current gain (VCE = 5 V: Ie = 0.1 rnA)
700
165
825
I.. 450)
0.84
SA
0.56
~A
nm
Electrons
Photon
A/W
ICEO
11<: 10)
nA
VCE .. t
0.81<: 1.2)
V
420 ... 1100
nm
S
A
1.17
0.14
nA/lx
mm'
t,:tf
0.25
jlS
Ce•
Ce.
2.7
5.6
pF
pF
'.
2
600
MHz
B
1m...... m with LED A" 960 Am)
2Ip leEI .. PhotocLl,rlnt of the phOtotran,lttor
Ip leal" PhotocLlrrent of thl collector·ba.. photodlode
Specifications are subject to change without notice.
357
i'A
I
ReiatiYe spectral eminion
Photocurrent
IJA (~CE=S")
'!. S ... ,='{)')
]p=fIEy )
Directional characteristic
vi
100
Ip =/(rp)
lOO
200
3D'
60
50 -
40
I-.+I+--+~
50'
60'
70'
Power dissipation
I::±
10"2
10·'
100
Ptot""fllT.mbl
90'0
100
10) 1041x
Photocurrent Ip =1 t7;;mbl
Leakage current
I!~~e =1'( T.....
b)
~.
1,5
~ol
leo
Icnz5
I,
100
R'h)u
OLL~~-LLL~~-L,-"
o
50
1,0
! 10,
0,5
1"
100
,
10
0
-50
150 0 (
50
*=1
o
1lO D (
-r...
-Tamb
Photocurrent
II
IhJIi
50
t1; mb l
Leakage current Ir;;..Eo =f(v cd
":25·C
'0;-
nA
1d~
1,5 rTT1rTTTT1rTTT-,-r-.I,
IT
10 2
10'
-E,
mW
150
!
H-iill~~t:ttJ
10- 1
9110 1000 1100 nm
-A
600 700 BOO
aD'
ICED~
t
1,0 H-+++!-::J;.H'ft+!+H
1.8
t 1~
ai_
16'_
1(1
o,sH--t+t+t+++++-H--H
fg
1~
1P
~8
G,6
~4
0,2
1~' OLL.L2.L.L.-'-,LLL
• .LJ
a.Ll10...LJ12..L1L
1,
o
Y
o
Rise time
~s
f,.tl
I, =f(Rd
Fall time t, =f(Rd
VcE =12V; I c =5mA
Current ,81n
Output characteristics
10'mlmI
V
f---j
--
,.A
_R,
-
1,4
7~A
-
400
~ r-
'~A,
t--
•• A
r-
3J.l At-=
1,2
1,0
07JJA
o,a
0,'
·~~f
200
2 A
o"
100
Olr
12
·'t'
O,9pA
OftJ,lA
I =1]JA
10
..Ll
~"t300
5~A
8
1"
O.8JJA
a.A -
'lJ
10)Q
600
I -t-1iO';;.
tt
10 2
B,el=f{IBl
8,.,=((E.)
18 = Parameter
~A
i
10·' L....L.Ll..l.UWLc---Li.LL"-ll.U
Output characteristics
1t;=f(Vcd
18 = Parameter
,
mA
10'
, mA
_I,
~VCE
o
o
14 V
---,VCE
358
0
2
A
Ii 111
0
10Y
10 2
1~
10°
10'
1(Jz
,1)'1
10°
10'
1
3 1d'nA
102
103 ,o4L.
10
10
-I,
_E,
litronix
BPX 81 SERIES
A Siemens Company
PHOTOTRANSISTOR
SINGLE AND ARRAYS
Package Dimensions
.... "." Single Unit
.01312·'r
Arrays
.11212,141
.ONI2,24}
.055(1,41
,039(1)
.02810,1)
02410,6}
I12OIO,5}
.Q1610,41
~:
Dimensions inside parenthesis are in mm
RldilnlSlftlltivl Ar .. ,016 jll,431 • .o16 111,431
Dimensions outside parenthesis are in inches
Maximum Ratings
FEATURES
•
•
•
Silicon NPN Planar Phototransistor
Low Cost
Miniature Size
Available As Single Unit, BPX 81 and A"aysTwo Chip, BPX 82
Three Chip, BPX 83
Four Chip, BPX 84
Five Chip, BPX 85
Six Chip,
BPX 86
Seven Chip, BPX 87
Eight Chip, BPX 88
Nine Chip, BPX 89
Ten Chip, BPX 80
Narrow Acceptance Angle, 18°
High Gain, Up to 5 rnA
DESCRIPTION
The types BPX 80 to BPX 89 are plastic encapsulated phototransistor arrays consisting of an
arrangement of max. 10 silicon NPN epitaxial
planar phototransistors. The individual photo·
Collector-emitter voltage
Junction temperature
Collector current
Storage temperature
Power dissipation
Soldering temperature in a 2 mm distance
from the case bottom (t ~ 3 s)
Thermal resistance
Collector junction to air
Collector junction to solder pin
Collector-base - photodiode
(Ey :: 1000 Ix; VeE'" 5 VO
Tstor
Ptot
-40to+80
'c
100
mW
T,
230
'C
RtllJamb
R tllJL
750
650
K/W
K/W
JpCB
(E. = 0.5 mW/cm 2 ; ~ = 950 nm; Vee = 5 V)
(VeE = 5 V)
Collector-emitter leakage current
(VeE = 25V;E= 01
Collector emitter saturation voltage
(Ie :: 0.25 mA; Ey = 1000 Ix)
Range of spectral sensitivity
(S ~ 0.1 Smax)
Wavelength of the max. sensitivity
Rise time from 10% up to 90% of the final value
Fall time from 900,-b up to l00,-b
of the initial value (RL
kQJ1)
Radiant sensitive area
Capacitance
(VeE = 0 V; f = 1 MHz; E = 0)
Acceptance half angle
=,
[PCB
7.1
1.5
#A
#A
ICEO
25 « 200)
nA
VCEsat
0.2
V
440101070
850
nm
As ma~
5 (~10)
0.17
""mm'
6
18
deQree
tr;tf
A
CeE
~
pF
Grouping is done at Ey <:::: 1000 Ix.
the standard lead spacing of 2.54 mm (1/10").
A small angle of the lens-shaped light window
avoids optical "cross modulation" from the
Upon request these groups are available.
adjacent system. The collector terminals are
marked by small projections arranged at the
sides of the solder pins. The phototransistor is
suitable for versatile applications in conjunction
with filament lamps and infrared light. The
BPX 81 can be mounted on PC boards and is also
provided for use as detector of the I ight em itti ng
diode LD 261 (same type as BPX 81) in miniature
light barriers.
V
'C
rnA
Tj
Characteristics (Tamb = 25 0 C)
Group
Photocurrent
Ip
(VeE:: 5 V; Ev '" 1000 Ix)
Photocurrent ' approx./p
(Vce= 5 V; E."',5 mW/cm2 )
Colour code
electric detectors are spaced apart according to
32
90
50
VeE
Ie
8PX 82A thru BPX 80A
BPX 82B thru BPX 80B
BPX 82C thru BPX 80C
BPX 81-1
BPX 81-2 8PX 81-3
0.63 to 1.25 1.0 to 2.0 1.6 to 3.2
BPX 81-4
2.5 to 5.0
BPX 82toSO
.63 to 5.0
rnA
.16 to .32 .25 to .50 .40 to.80 .63 to 1.25 ,25 to 1.25 mA
20 mW/cm'
brown
Ip
Ip
Ip
olange
yellow
Ey = 1000 Ix
E. '" 0.5 mW/cm2
1.25 to 2.5
1.6 to 3.2
2.0 to 4.0
.32 to .63
.40 to .80
.50 to 1.00
The illuminances refer to unfiltered radiation of a tungsten filament lamp at a colour
temperature of 2856 K. (standard light A in accordance with DIN 5033 and IEC 306-1).
Irradiance Ee measured with HP radiant flux meter 8334A with option 013.
Specifications are subject to change without notice.
359
I
110...... _ _ _""'"'
J""""I'--,
O·
III
100
11°
J
5",90
i
DlNatI_1 oIIIirllcteriltlo I,. • , C.»
Photoaurrent ... tunatJon of
1M E• ., E.I,. • , lev.
,.. ~1·'CA.l
V
10
7tI
I
ill
50
I
10
if
30
20
10
\
\
\
I
1\
I
\
oV
Il1O 500 6IlO 700 800 900
1000 1100 '"
---t,
-A
o.;;r
, liS"" "'5"'" ,. ·s....
em!
---+E,
--.......-""'·/I~
..w
lDO
Po
90
1\ \
tao
7tI
60
LL-!.-
\
,.,.075011W
Pi=- -
"
I"
40
0.8
0.6
~
~
-- -f-.- r--- -- r--- - r-r--
'"
i"
1.0
,~
50
30
",""
",,""
~/
0.1
10 ",--f--10
~--
20
40
60
10
.0.1
o
IIO'C
rJ
-_.....--
__
C,,·/114:o1
...
III
~mrnmrTmn,
8
-lOiII-1O 0111030 4050 iIl7tl8090 110 "C
- I. .
-~
~·/IR,I
D.... current ICEo • , (Tam"»
nA VeE" 26V;E- 0
, .......... ·'CRd
'10'
I".
'f
TH
'10'
1 Ii
ti
10'
10'~
III
Ifl
111
rI
D"
-
II'
fJ'
ti'
V
Vc(
0
__IjpicdOlrvem
1init0l1'W
50
lOG
---..T......
360
1500(
litronix
SFH 305 SERIES
A Siemens Company
PHOTOTRANSISTOR
Package Dimensions In Inches (mm)
.112
(2.84)
.045
(1.15)
~([9)r-
~
.035
I----
r---
(2'24)~
.088
-~
Maximum Ratings
Collector-emitter voltage
VCEO
Junction temperature
Collector current
1j
Ic
Ts
Ptot
TL
32
90
50
-40 ... +80
75
230
RthJamb
R thJL
950
850
K/W
K/W
I CEO
3 (';20)
nA
(Ic • 500pA; Ie = 25pA; E=O)
Range of spectral sensitivity
VCESIt
0.2
V
(S=O.l.s;,.p)
A
~malC
440 ... 1070
850
nm
tr;tf
5(';10)
0.17
p.
Storage temperature
Power dissipation (T8mb '" 25't:l
Max. soldering temperature It
FEATURES
• Miniature Plastic Package
• 2.5 mm (1/10") Lead Spacing
• Detector for SFH 405
Infrared Emitter
• Designed for Maximum Spacing of
10 mm Between Emitter & Detector
DESCRIPTION
The SFH 305 is a NPN silicon planar
photo transistor in clear plastic encapsula·
tion with solder PIN terminals. The
connectors ih the form of solder tabls are
spaced 2.54 mm (1/10 inch). The photo
transistors are grouped according to photo
sensitivity. The SFH 305 is suitable for
use as detector for the infrared diode
SFH 405 to effect miniature light barriers
with close spacing between sender and
receiver up to 10 mm maximum. Also,
the SFH 305 is suitable for application
with glow-lamp light, i.e. daylight. The
collector is marked with a colored dot.
OS;;;
5 51
Thermal resistance
Collector junction to air
Collector junction to case
V
"c
mA
"c
rrNJ
"c
Characteristics
(T. mb = 25"c)
Collector-emitter leakage current
(VCE • 30 V; E • 0)
CoUector-emitter saturation voltage
Wavelength of the max. sensitivity
Radiant sensitive area
Rise time to 90% of the final value
Fall time to 10% of the initial value
(R L = 1 kn)'
Radiant sensitive area
A
Capacitance
(VCE = 0 V; f = 1 MHz; E = 0)
CCE
Half Angle
op
mm 2
pf
16
Degrees
'm.a.urad with LEO" '" 950"m
Group
Photocurrent
Ip
(VCE=5 V; Ev=1000 Ix)
Photocurrent 1 )
Ip
(VCE=5 V; Ea= 0.5 mW/cm 2 )
SFH 305-2 SFH 306-3 IV2)
mA
1.0102.0
1.6103.2
0.25100.5
0.4100.8
mA
The illuminances refer to unfiltered radiation of a tungsten filallll!nt lamp
at a color temperature of 2856.K . .lStandard light A in accordance with
DIN 5033 and lEe 306·1).
Irradiance E. measured with HP radiant flux meter 8334A with option 013.
1) Measured with LED X""950 nm~
2) In preparation.
Specifications are subject to change without notice.
~
361
I
Directional characteristic I p :::: 1 (!p)
Power dinipation Ptot::::1 (r.mb)
Relative spectral sensitivity
mW
100
%
100
li'ot
!
!Kl
f----..
~
\\ V R
VR'hlL =850K/W
60
'\ ~
~
40
50
60
1
20
\
40
c--
=/(A)
\
1
--
\
,
I
-
r----
30 - - ---
I\,
20
-~
40
~
20
~+f
r/
/
V
-r--
60
'hl ...=950K/W-
Srel
10
!Kl
100°C
\
--
_1
V
400 500 600
700 800
-Tomb
900
1000 1100
nm
----A
rnA Photocurrent Ip'=/(Ev) und Ip =/(Ee)
~ =- 1 (T.mb)
Photocurrent
10 2
pF Collector-emitter capacitance
1.6
10 HitttIIIt-tittiitlt'
["t
}H'111111l
t
10'
I
JI
10'
10' V
PHOTOYOLTAlC CELLS
Package
Tvpe
Package Outline
Part Number
-{]
Chip
with Leads
Chip
with Leads
Encapsulated
Q)
Half Angle
Sensitivity
s (nAllx)
Tvpical
Dark Current
VR-IV; E=O
IR(IlA)
Page
365
BPY47P
60·
1400
25
TP60
60·
1000
25
367
===e
Chip
with Leads
~-{]
Chip
with Leads
Chip
with Leads
D
Chip
with Leads
===tJ
,
Chip
with Leads
====!LJ
TP61
60·
1000
25
BPY4BP
60·
500
10
369
BPY64P
60·
250
4
371
BPX79
60·
135
0.3«50)
373
BP100P
BPYllP-4
BPYllP·5
BPYllp·6
25
47-63
56·75
>71
3«10)
375
60·
363
1«10)
377
I
364
litronix
BPY 47P
A Siemens Company
PHOTOVOLTAIC CELL
Package Dimensions In Inches (mm)
t
:J
_
I-- Radiant Sensitive Area
.787 .780
(20)(19,8)
Nk~;e __
C;
~
~ Lit
~
=-
",-
E
~ Q 1---2.95 (75) min
~=-
t £l.~ J 1_) ~
t ,
098
l2 ,5) max
c
~",,~;:::::,
Red anode
Strand ~ 0,3
.031 max
(0,8)
IIcentect surfece
FEATURES
Maximum Ratings
Reverse voltage
Temperature range
• Silicon Photovoltaic Cell
• Medium Radiation Sensitive Surface
• Very High Sensitivity, .9 p.A
DESCRIPTION
The photovoltaic cell SPY 47P is suitable
for general applications in control and drive
circuits. It can be used as detector for
filament lamps or daylight.
For mounting instructions see photovoltaic
cell application note.
l~~J) min
i:
mb
I ~55tO+'OO I ~c
Characteristics (Tamb = 25°C)
Spectral sensitivity 1)
(Short circuit current I K)
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon) (A. = 850 nm)
Spectral sensitivity (), = 850 nm)
'.4 (;;'0.9)
.tS max
IlA/lx
850
nm
0.80
Electrons
Photon
S
0.55
A/W
(E" = 10000 Ix) 11
Open circuit voltage
Vl
;: ; 450
mV
(Ey = 1000 Ix) 1)
Vl
4'0('280)
mV
Vl
300(' '50)
mV
I,
A
mA
em'
TC
,3
'.8
- 2.6
TC
0.2
%/K
Co
,6
25
70
nF
.A
.A
Open circuit voltage
Open circuit voltage
IE" "" 100 Ix) 11
Short circuit current
(E" 10000 Ixl 1)
=
Radiant sensitive area
Temperature coefficient of Vl
(see diagram)
Temperature coefficient of I K
(see diagram)
Capacitance (VR = 0 V; E = 0)
Dark current (VR = 1 V; E = 0)
Dark current (VR = 1 V; Tamb = 50"C; E = 0)
IR
IR
mV/K
1) The illuminance indicated r~fers to "nfiltered radiation of a tungsten
fi)ament )amp at a co)or temperature of 2856 K (standard light A in
accordance with DIN 5033 and I EC publ. 306-t).
Specifications are subject to change without notice.
365
I
Relative spectral sensitivity
% S.. , =f(l)
Open circuit voltage VL = flEv)
mV Short circuit voltage I K = flEv)
100
600
/
r\
\
J
II
60
U 500
400
/
II
50
40
300
200
30
20
/
10
--t--
f
V
~
V
~ r--
vL
f-
- --
/
V
-
--
t--
/
V
V" V ~
j ......
/ ~ .'"
1--
\
400 500 600 700
BOO 900 1000 1100 nm
/~.
",
-
ZOo
-- t--
-
~V
o
500
Capacitance C =
fIVR); E = 0
o
-E,
-~
Directional characteristic IK =/(",)
10°
0°
10°
1000
900
,/
V
100
IK
1000 Ix
of
40
ZO°
c
I
-I
30
1--
30°
20
.0°
t-.
50°
10
60°
70°
80°
90·
80'
90°
o
Photovoltaic Cell
(Plane Receiver)
-- ----t.....
......
1,0
0,5
-VR
366
V
litronix
TP 60, TP 61
A Siemens Company
SILICON PHOTOVOLTAlC CELLS
Package Dimensions
TP 60
Ml2xl
.---~TP61
.197
(~!72 (12) -l
Radiant SenlilM A,...018 (0,45)
""d'02010'51
~~
.433(11)
Aedanolle
~
"l_
~~
.,a
-
~-
I
14----2.36(BO)min~
.059 (1,51 tllllI
Dimensions inside parenthesis are in mm
Dimensions outside parenthesis are in inches
FEATURES
Maximum Ratings
• Silicon Photovoltaic Cell
Operating and storage temperature range
Reverse voltage 1)
• Stud Package, TP 60
• Wide Temperature Range, _55° to
+100°, TP 61
Characteristics (Tamb = 25°C)
•
Very High Sensitivity, .7 /.I.A/lx Min
DESCRIPTION
The silicon photovoltaic cells TP 60 and
TP 61 are suitable for use in drive and control circuits. Featuring the same electrical
characteristics, they differ only in design.
The anode (positive pole of the cell) is
marked by a red lead.
For mounting instructions see photovoltaic
cell application note.
Spectral sensitivity 1)
(Short circuit current I K)
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon) (). = 850 nm)
Spectral sensitivity (A. = 860 nm)
Open circuit yoltage IE. . = 10000 Ix) 1)
(E... .;; 1000 Ix) H
IE. . = 100 Ix) 11
Short circuit current (Ev = 10000 Ix) '1
(Ev "" 1000 Ix) 1J
Infrared response limit
Radiant sensitive area
Tolerance of the
radiant sensitive area
Temperature coefficient of Vl
(see diagram)
Temperature coefficient of IK
(see diagram)
Capacitance (VR 0 V; E = 0)
Dark current (VR 1 V; E 0)
Dark current (VR = 1 V; Tamb = 50"C; E::: 0)
=
=
=
11mb
'C
V,
V
S
A. 5ma/(
"S
, I" 0.71
B50
O.BO
0.55
" 440
410 I" 2701
3001< 1401
<7
IJ.A/lx
nm
Electrons
Photon
A/W
I,.
A
1.100
1.5
mV
mV
mV
mA
mA
nm
em'
Atol
TC
± 0.1
em'
-2.6
mV/K
TC
0.12
%/K
Co
f,
f,
16
25
65
nF
.A
.A
VL
VL
VL
f,
f,
~
0.7
II The Iliuminanee indicated refers 10 unfiltered radiatton of a tungsten filament lamp at a color temperature of
2856 I( (standard light A In accordaneewith DIN 5033 and lEe pUbl. 306-1).
Specifications are subject to change without notice.
367
I
Opren ...............nct
.............. ., .............
...,.alnNIt ...nnt
IIt/V,,·'CEJ;I.-IIE.J
'4
110
Il1O
1/ 1\
~
I--
I
Il1O
II
100
II-
V
V V
I
!Iv
0)
0
D.rk ......... ',.·'I""
"*.,.,.",....;'-0
C............ C·'I\4t1
'-0
nI
I,
.
'V
1
I
II
Vi
II
i/
-
IL
i
1000
T
!1GOO
I
1[Il10
I
pA
mt
31
I,
i
~
",,50'[
II
911'
t
Y"l
m•
'0'• •
17
1J Y
0,5
•
__...
..
11'11
m'
t
yXs.t
m'
... o
o.s
to
V
-r,
-r,
PItoIovo........ ,,",otkln
......rt clrouIt current v,- 'U",I
mY R~· pel'llmete,
t
vl
5
'I
ru.t
V,
1J
H--l"oH-t-+-II-+-H
to
0,5
H-++H-+++-PI
5
=:'iGoo
I
1 ,A
V
'0
V
'00
,II
,J/I"
"
• .1],111
O'-"-::'--'--'-.L....JL-l..................
o
20
10
III
III
110'1:
-I.
0
20
10
III
III
IIO'C
510'
-I.
.........".... • • hIMtton
of ....,. ...............
mAlt~ ..............
"·'''II)
X
110
1' . . . . .
Ip
Ave,... pftotooumInt ••• fuMtfon
ofHgltt obrad... fNquency
E.-1ooo II; R~ -IOClloed .....na
t--
1eo
eo
20
0
\
litronix
BPY 48P
A Siemens Company
PHOTOVOLTAlC CELL
Package Dimensions in Inches (mm)
RADIATION SENSITIVE AREA
020
252
(6.4)
iQ2!
W6
(0.3)
1) CONTACT SURFACE
138 (3.51 MIN
(751
.098 MAX
1C
85~)MAX I 012J 1
I
~
I
2:J
r::
(%2~)MAX
251
"
REO (ANODE)
"
LEAD 0.012 (00.3)
Maximum Ratings
FEATURES
•
Reverse voltage
Temperature range
VR
Tamb
Silicon Photovoltaic Cell
•
Large Radiation Sensitive Surface
•
High Sensitivity •. 3 /lA Min
DESCRIPTION
The photovoltaic cell Spy 48P is suitable
for general applications in control and drive
circuits. It can be used as detector for
filament lamps or daylight.
For mounting instructions see photovoltaic
cell application note.
Characteristics (Tomb = 25°C)
Spectral sensitivity 1)
(Short circuit current lK)
Wavelength of the max. sensitivity
Quantum yield
(Electrons per photon) (A = 850 nm)
Spectral sensitivity (A = 850 nm)
Open circuit voltage lEv = 10000 Ix) 1)
(E.... = 1000 Ix) 1)
(E. . = 100 Ix) 1)
Short circuit current lEv = 10000 Ix) 1)
Radiant sensitive area
Temperature coefficient of VL
(see diagram)
Temperature coefficient of IK
(see diagram)
Capacitance (VR 0 V; E 0)
Dark current (VR = 1 V; E = 0)
Dark current (VR = 1 V; Tamb = 50°C; E ::: 0)
=
=
S
AS max
0.5 (> 0.35)
850
"A/Ix
0.80
Electrons
Photon
I,
A
TC
0.55
.450
410 « 2801
300 (0150)
4.3
0.67
-2.6
TC
0.2
S
VL
VL
VL
A/W
mV
mV
mV
rnA
em'
mV/K
%/K
of
Co
IR
IR
om
10
25
"A
"A
1) The illuminance indicated refers to unfiltered radiation of a tungsten
filament lamp at a color temperature of 2856 K (standard light A in
accordance with DIN 5033 and lEe publ. 306·1).
Specifications are subject to change without notice.
369
I
Open circuit voltage V, = f (E,)
Short circuit current IK = fIE,)
Relative spactral.ensitivity
$,., = f I~)
%
mV
100
jlA
600+ 1
1
~l~ I I p 6 0 0
500~ t ttH-t
t+~500
-1Tv+
~'I
~ +- ~ -t• 400
-L+
I
VL
400
60
300 '-.r-l--t-+-
50
40
zoo
30
20
100
10
___ .J
400 500
1
--
Capacitance C
1000 Lx
--Ev
--A
nf
16
-··~----O
500
SOO 900 1000 1100 nm
600 700
= f IVR)
Directional characteristic IK
= f (: 19) nAil x
(Short Circuit Current)
Wavelength of the Max. Sensitivity (AS max) . . . . . . . . . . . . . . . .. 850 nm
Quantum Yield (~), I = 850 nm
(Electrons per Photon) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .080
Spectral Photosensitivity (SA), A= 850 nm . . . . . . . . . . . . . . . .. 0.55 AIW
Open Circuit Current (V L)
Ev = 100 Ix ...................................... 170 (>: 120) mV
Ev=1000 Ix ..................................... 300 (>:200) mV
Short Circuit Current (IK)
Ev= 1000 Ix ............................................ 25 ~A
Rise Time for 80% of IK (t,) .................................. 4 ~
Temperature Coefficient (T t----,
CLOCK
1
TO'SEGMENT
OECODER
9300
Figure 5
For displays of 8 digits; a very common number in
counter-timer instruments, the 9328 dual 8 bit shift
register makes a very good circulating shift register.
Two packages are required to store and circulate 8
digits - Figure 4.
cost savings over conventional instrument designs.
Apart from the strictly logical problems involved in
a multiplexed display, the designer must choose
suitable operating conditions for the LED's. Peak
forward current, current pulse width, duty cycle and
repetition rate, are all factors which the designer
must determine.
The scheme can be extended to more digits by adding
a 4 bit parallel shift register such as the 9300, for each
extra digit; the extra shift bits are inserted at the
points marked J( in Figure 4. The same circuit can
be used for less than 8 digits, if a 12-1/2% duty cycle
is satisfactory. For less than 8 digits, where maximum
available duty cycle must be maintained, the scheme
shown in Figure 5 can be used.
The luminous intensity, or the luminance of GaAsP
LEO's, is essentially proportional to forward current
over a wide range, but certain phenomena modify this
condition. At low currents, the presence of nonradiative recombination processes, results in less light
output than the linear relationship would predict.
This effect is noticeable in the region below about
5 mA per segment (for 1/4 inch characters). The
result is that noticeable difference in luminance from
segment to segment can occur at low currents. At high
currents, the power dissipation in the chip causes
substantial temperature rise, and this reduces the
efficiency of the chip. As a result the light output
versus forward current curve falls below the straight
The preceding schemes demonstrate that systems containing recirculating data are very effectively coupled
to multiplexed LED displays. Many multi·digit systems such as calculating machines use L.S.I. MOS
circuits to provide their logic, and these naturally
lend themselves to recirculating data. It is now practical to use custom L.S.I. to provide the logic functions
of a D.V.M. or a counter-timer type of instrument,
employing multiplexed LED displays, at a significant
389
I
variation in light output at a low DC current, but a
much smaller variation in the average output when
operated in a pulsed mode. As well as an increase in
luminance, or luminous intensity due to pulsing, there
is an increase in brightness because of the behavior
of the eye. The eye does not behave as an integrating
photometer, but as a partially integrating and partially
peak reading photometer. As a result, the eye per·
ceives a brightness that is somew~ere between the
peak and the average brightness.
The net result is that a low duty cycle high intensity
pulse of light looks brighter than a DC signal equal to
the average of the pu Ised signal. The practical benefit
of multiplexed operation then, is an improvement in
display visibility for a given average power consump·
tion besides the lower cost. The brightness variation
from segment to segment and digit to digit is also
reduced by time·sharing. The gain in brightness over
DC operation can be as much as a factor of 5 at low
duty cycles of 1 or 2 percent, and peak currents of
50 to 100 mA.
Figure 6
line, at high currents (Figure 6). It should be empha·
sized that this latter effect is entirely due to self heat·
ing. If the power dissipation is limited, by running
short pulses at low duty cycle, the output follows
the straight line up to very high current densities.
Whereas 100 A/cm 2 may be used in DC operation,
as much as 104 A/cm 2 can be used under pulsed con·
ditions, with a proportionate increase in peak intensity. (If this did not occur, GaAsP lasers could not be
built.) Gallium Phosphide, however, has an inherent saturation mechanism that causes a drastic reduction in efficiency at high current densities even if the
junction temperature remains constant. This effect is
due to competing non·radiative recombination mech·
anisms at high current density.
A number of factors must be taken into account when
deciding on the design of a multiplexed display.
Besides the optical output, thermal considerations are
very important.
Most 1/4" size LED numerics are rated at 30 mA DC
max per segment. Under pulsed operation, higher
currents can be used provided several thermal con·
siderations are taken into account.
As a first approximation the brightness of a pulsed
LED will be similar to that when operated at a DC
forward current equal to the average pulsed current.
For example, for 40 mA peak current at 25% duty
cycle, the brightness will be similar to DC operation
at 10 mA. The actual brightness comparison will
depend on the actual pulsing conditions. Under most
legitimate conditions the brightness will be greater
for pulsed operation.
(1) The average power dissipation must not exceed
the maximum rated power.
(2) The power pulse width must be short enough
to prevent the junction from overheating dur·
ing the pulse. This implies that the pulse
width must get shorter as the amplitude in·
creases.
Figure 6 shows how the actual light output at 5 mA
DC is substantially less than expected from the ideal
curve, because of the "foot" on the curve at low
currents. Operation at 50 mA peak current and 10%
duty cycle yields a high peak output as shown, and an
integrated average output that is much closer to the
ideal value. It should be obvious that variations in the
"foot" from segment to segment cause a significant
Present experience indicates that for pulses of 10 MS,
the amplitude should be limited to 100 mA max.
Shorter pulses of higher amplitude may be used but
the circuit problems become severe if the pulse width
is very short. As more information on thermal param·
eters of the devices becomes available, more specific
design rules can be given to assist the designer.
390
litronix
Appnote 4
A Siemens Company
DRIVING HIGH-LEVEL LOADS
WITH ISO-LlTTM OPTO-ISOLATORS
by David M. Barton
Frequently a load to be driven by an Iso·Lit requires
more current, voltage, or both, than an Iso·Lit can
provide at its output.
shows the minimum available output current of each
device assuming 60°C derating (from Table I) and a
10 percent margin for temperature effects.
Available Iso·Lit output current, of course, is found
by multiplying input (LED section) current by the
"CTR" or current - transfer·ratio. For worst-case
design, the minimum specified value would be ·used.
The minimum CTR of the Litronix Iso-Lit 1, 12
and 16 are 0.2, 0.02 and 0.06 respectively. Tempera·
ture derating is not usually necessary over the 0 to
+60 degree Celcius range because the LED light output
and transistor beta have approximately compensating
coefficients.
If the Iso-Lit is being operated from logic with 5 volt
V cc, and 0.2 volt VCE saturation is assumed for the
driving transistor, a 75 ohm RIF resistor will provide
the 48 mAo The forward voltage of the I R-emitting
LED is about 1.2 volts. Figures lA and lB show two
such drive circuits.
Vee
Multiplying the minimum CTR by 0.9 would ensure
a safe design over th is temperature range. Over a wide
range, more margin would be required.
ISO UT
The LED source current is limited by its rated power
dissipation. Table I shows maximum allowable IF vs
maximum ambient temperature.
T'L
INPUT
Values for Table I are based on a 1.33 mWtC derate
from the 100 mW at 25°C power rating.
Table I
1.2K
--'\Nv---l-'£
Figure lA. NPN Driver
MAXIMUM TEMPERATURE
I,MAXIMUM
40°C
65mA
60°C
4BmA
BO°C
25 mA
Obviously, one can increase the available output current then by either choosing a higher CTR-rated
Iso-Lit, by providing more current, or both. Table"
I
Table II
ISO-LIT
1
ICE(MIN) rnA
B.6
12
0.B6
16
2.5
Figure lB. PNP Driver
391
A "buffer-gate," such as the. SN7440 or Signetics
8855, provides a very good alternative to discrete
transistor drivers. Figure 2 shows how this is done.
Note that the gate is used in the "current-sinking"
rather than the "current-sourcing" mode. In other
words, conventional current flows into the buffergate to turn on the LED. This makes use of the fact
that a T2L gate will sink more current than it will
source. The SN7440 is specified to drive thirty 1.6 mA
loads or 48 mAo Changing RtF from 75 to 68 ohms
adjusts for the higher saturation voltage of the monolithic device.
R,
ISO·LIT
Figure 3B. PNP Current Booster
vee
ISO-LIT
and the maximum design ambient temperature in
conjunction with the specified maximum 25 degree
ICBo to calculate IcBo(T).
R"
Figure 2. Buffer-Gate Drive
MORE CURRENT
For load currents greater than 8.6 mA, a current
amplifier is required. Figures 3A and 38 show two
simple one-transistor current amplifier circuits.
ISO-LIT
As an example, suppose a 2N3568 is used to provide
a 100 mA load current. Also assume a maximum
steady-state transistor power dissipation of 100 mW
and a 60°C maximum ambient. The transistor junction-to-ambient thermal resistance is 333°C/watt, so
a maximum junction temperature of 60 + 33 or 93°C
is expected. This is about 7 decades above 25°C.
Therefore, IcBo(T) = IcBo(max) x 27 =50 nA x '1-28
6.5 IlA. A safe value for Rb is 400 mV/6.5 IlA =
62 kilohms.
=
Working backwards, maximum base current under
load will be lo/hFE(min) = 100 mA/l00 = 1 mAo Current in Rb is VBE/Rb = 600 mV/60k = 10llA, which
is negligible. Table II shows that an Iso-Lit 16 could
provide more than enough base current for the
transistor but an Iso-Lit 12 could not. Less than the
maximum allowable drive could be provided to the
Iso-Lit 16, since only 1 mA is required. A 20 mA
drive provided by a 180 ohm resistor would suffice.
An Iso-Lit 1 with 9 mA drive would also work.
Since the transistor in the Iso-Lit is treated as a twoterminal device, no operational difference exists between the NPN and the PNP circuits. Rb provides a
return path for ICBO of the output transistor. Its
value is: Rb = 400 mV/ICBO(T) where ICBO(T) is
found for the highestiunction temperature expected.
If the load requires more current than can be obtained
with the highest beta transistor available, then more
than one transistor must be used in cascade. For example, suppose 3 amperes load current and 10 watt
dissipation are needed. A Motorola MJE3055 might
be used for the output transistor, driven by a MJE205
as shown in Figure 4. Using a 5° /watt heat sink and
the rated MJE3055 junction-to-case thermal resistance
of 1.4° /watt, we find that junction temperature rise
is 6.4 x 10, or 64°. Therefore maximum junction
temperature is 124°C. This is 10 decades above 25°C
making ICBO(T) = 2,olcBo(max) = l03l cBO (max).
Assume that leakage currents double every ten degrees. Use the maximum dissipated power, the specified maximum junction-to-ambient thermal resistance,
ICBo(max) at 30 volts or less is not given, but ICEO is.
Using (for safety) a value of 20 for the minimum lowcurrent hFE of the device, ICBO could be as large as
Figure 3A. NPN Current Booster
392
no current flows in the LED the phototransistor,
being OFF, allows R2 current to flow into the base
of 0" turning 0, ON. When the Iso·Lit is energized,
its phototransistor "shorts out" the R2 current turn·
ing 0, OFF.
v'
R,
F"igur. 4. Two-NPN Current Booster
IcEo /20 : 35 p.A. Then ICBO(T) is 35 rnA and Rb2 :
400 mV /35 rnA : 11 ohms. For Ib use lo/hFE(min @
4A) : 3A/20: 150 rnA. IAb2 : 600 mV/l0 ohms:
60 rnA, so 1.(0') : 210 rnA.
ISO"LlT
v-
Maximum Power in 0, will be about 1/14thepower
in O2 since its current is lower by that ratio and the
two collector-to·emitter voltages are nearly the same.
ThJs means 0, must dissipate 700 mW.
Figure 5A. NPN HV Booster
Assuming a small "flag" heat sink having 50° /watt
thermal resistance, we find the junction at about
95°C. The 150°C case temperature ICBO rating for
this device is 2 rnA, so one can work backwards and
assume about 1/30 of this value, or 70 p.A. On the
other hand, the 25° rated ICBO is 100 p.A. Choosing
the larger of these contradictory specifications, Rb, :
400 mV/O.l rnA : 4k "'" 3_9k. 0, base current is
IE(o,/hFE(O'-min) : 210 rnA/50' : 4.2 rnA. Total
current is Ib(o,) + lAb': 4.2 + 0.24: 4.5 rnA. Table"
shows that an Iso-Lit 1 could be used here.
V'
ISO"LlT
R,
MORE LOAD VOLTAGES
v-
All of the current-gain circuits shown so far have one
common feature: load voltage is limited by the 30
volt rating of the Iso-Lit, not by the voltage or power
rating of the transistor(s). Figure 5A shows a method
of overcoming this limitation. This circuit will stand
off BV CEO of 0,. The voltage rating of the phototransistor is irrelevant since its maximum collectoremitter voltage is the base-emitter voltage of 0,
(about 0.7 volts).
Unlike the "Darlington" configurations shown previously, this circuit operates "normally-ON." When
*Minimum hFE is obtained using the specification at ICE =
2A and the "Normalized DC Current Gain" graph given in
the Motorola "Semiconductor Data Book," 5th Edition,
pp. 7 - 232, 3_
Figure 5B. PNP HV Booster
The value of R, depends only on the load·supply
voltage V+ - V-, and the maximum required 0, base
current. This is derived from the minimum beta of 0,
at minimum temperature and the load current. Thf
required current·drive capability is the same as IA"
since IA, changes negligibly when the circuit goes
between its "ON" and "OFF" states.
In some applications either more current gain will
be required than one transistor can provide or the
power dissipated in R, will be objectionable. In these
cases, simply use the Darlington high·voltage booster
shown in Figure 6A.
393
I
the transistors cost less. Of course performance char·
acteristics of the NPN and PNP versions are identical
if the device parameters are also the same.
LOAD
R,
APPLICATIONS
ISO·UT
Figure 6A. NPN Darlington HV Booster
V·
Iso-Lit isolated circuits are useful wherever ground
loop problems exist in systems, or where dc voltage
level translations are needed. In many systems socalled interpose relays are used between a logic circuit
section (which may be a mini-computer) and the
devices being controlled. Sometimes two levels of
interpose relays are used in cascade either because of
the load power level or because of extreme difficulties with EM!. Iso-Lits, aided by booster circuits
such as those described, can replace many of the
relays in these systems.
Figure 6B. PNP Darlington HV Booster
The reed relays, typically used as the first level of
interpose and mounted on the interface logic cards
in the electronic part of the system, are almost always
replaceable by Iso-Lits since their load is just the coil
of a larger relay. This relay may have a coil power of
1/2 to 5 watts and operate on 12, 24 or 48 volts dc.
If more than one load is being driven and their negative terminals must be in common, use the PNP circuit, Figure 68. Otherwise, the NPN is better because
Assuming worst-case design techniques are carefully
followed, system reliability should improve in proportion to the number of relays replaced.
R,
LOAD
394
Appnote 5
litronix
A Siemens Company
MORE SPEED FROM ISO-LlTTM
OPTICAL ISOLATORS
by David M. Barton
Figure 1 shows a typical circuit employing an Iso·Lit
to transmit logic signals between electrically isolated
parts of a system. In the circuit shown, the Iso·Lit
must "sink" the current from one T2L load plus a
pull·up resistor. This load is roughly equ ivalent to a
4 k.12 resistor to Vee. The resistor in series with the
LED half of the Iso-Lit must supply the worst·case
load current divided by the "current transfer ratio"
or CTR of the Iso·Lit. If an Iso·Lit 1 is used, having
a min CTR of 0.2, and 30 percent variation in the
load is allowed, 8.1 mA is required. This is supplied
by the 430.12 resistor.
Using this method does not usually result in a large
power supply current drain since average repetition
rate is low inmost appl ications.
The maximum repetition rate at which this circuit
will operate is only about 3 kHz. The severe speed
limitation is due entirely to the characteristics of the
photo·transistor half of the Iso·Lit. This device has
a large base-collector junction area and a very thick
base region in order to make it sensitive to light.
Cob is typically 25 pF. This capacitance is, in the
circuit of Figure 1, effectively multiplied I:>y a large
factor due to the "Miller effect." Also, because the
base region volume is large, so is base storage time.
,'c
DEVICE
Figure 2
As drive is increased and RBE reduced, turn-on time
and turn-off time both decrease. The total amount of
charge stored can also be reduced by decreasing the
LED drive pulse duration. Also, as higher drive levels
are used, the load resistance, R L can be reduced to
further enhance the speed of the circuit. These parameters are related to each other such that all should
be changed together for best results.
Veo
One important generalization can be made concerning
their interdependence. The LED drive pulse duration,
Tin, output fall time, tf, output rise time, t, and
propagation delay, t p , should occur in a 1.5:1:1:1
ratio, approx imately. If this relationsh ip does not
occur, the circuit will not operate at as high a
repetition rate as it could at the same drive level.
Tout equals Tin at low currents but stretches out at
high currents.
,'c
DEVICE
Figure 1
A very simple method of reducing both of these
effects is to add a resistor between the base and
emitter as shown in Figure 2. This resistor helps by
reducing the time constant due to Cob and by removing stored charge from the base region faster than
recombination can. When a base-emitter resistor is
used, of course, the required LED drive is increased
since much of the photo-current generated in the
base-collector junction is now deliberately "dumped."
Figure 3 is a graph relating the important parameters
for a typical Iso-Lit 1 whose CTR is 0.25. The
optimum values of Tin, RBE and RL are shown versus
LED pulse current as are the resultant output pulse
width and maximum full-swing frequency. Rise, fall
and propagation time can be read as 2/3 of Tin'
395
I
Figure 3 shows that increasing drive to 200 mA and
using optimum RSE and RL will increase the maximum repetition rate from 3 kHz to 500 kHz, a 167: 1
improvement.
Since output current is small, some type of widebandwidth amplifier must be employed in order to
drive T2L loads.
One simple solution for intermediate speed operation
is the use of a low-power T2L inverter (1/6 74L04).
The collector of the photo-transistor is connected to
its input along with a lOOK pullup resistor. The base
is connected to system output-side common. This
inverter will in turn drive one 7400 series device.
Lower grade isolators will behave similarly if the LED
drive level is scaled appropriately to allow for a
lower CTR.
~""~
Another device which will provide a good interface is
an integrated comparator amplifier. The photo-transistor collector goes to Vee. Its base has a 200n load
resistor to ground and goes to one input of the comparator. Also, a resistor ~oes from this node to the
minus supply. This resistor is chosen to supply 50 pA.
The other comparator input is grounded. The voltage
at the comparator input will switch from -10 mV to
+10 mV or more when the diode turns on and the
output will drive the T2L loads.
100
~
50100
LED PULSE CURRENTlmAI
§
rt
~
§
"'.""".
a "'"
31<
~
R,
It<
i
3""
0
3QK
Of course discrete-component amplifiers could be
used and may be best in some applications.
Ra,
~-
"
100
It<
510
50
100
500
5
LEO PULSE CURRENT ImAI
10
50
100
500
LED PULSE CUARENTlmAI
Figure 3. Parameters vs LED Pulse Current
Another method of increasing speed is to operate the
photo-transistor as a photo-diode. In this method, bias
voltage is supplied between the collector and base
terminal, the emitter being unused. Operation to at
least 10 MHz is possible this way, but the price is the
need for external amplification. Figure 4 is a graph
'"
DEVICE
Figure 5
CONCLUSIONS
For operation to 500 kHz, the addition of a baseemitter resistor and a high-current driver is probably
the best method of increasing Iso-Lit speed. Above
500 kHz one must revert to photodiode mode and use
an external amplifier to drive most loads, particularly
T2 L.
Figure 4. Diode Mode Output Current vs
Drive Pulse Duration
showing peak output current versus drive pulse duration for 200 mA peak drive current.
396
litronix
Appnote 6
A Siemens Company
OPERATING LED'S ON AC POWER
by David M. Barton
Introduction
Frequently it is desirable to operate LEOs on AC
power rather than DC. Typically, the power source
is 120 VRMS 60 Hz. The most obvious method is to
rectify this power with a series diode and use a
resistor to limit LED current as shown in Figure 1.
R
RECTIFIER
2.0
/v
1.0
.3
() .5
LED
,,~
.2
l/V
.1
10
A resistor is necessary in series with the capacitor to
limit turn·on transient currents. A value of 100 ohms
will be adequate in most cases.
The Method
The current in the LED, of course, flows almost
exactly in quadrature with the line voltage. For this
reason, power dissipation is low, being limited to the
expected LED and rectifier power loss, the loss in
series resistor and to losses in the capacitor. The
latter term will be extremely low if high quality
capacitors are used. Although power consumption of
a circuit may not be of much significance in terms of
the cost of the power, it certainly can be important to
reduce heat generation within an enclosure.
Figure 2 shows a better method. Here a capacitor is
used to control LED current and a shunt silicon diode
provides rectification.
AC
FIGURE 2.
If more than one LED is to be operated from the
same source, simply put the LEOs in series in the
same circuit, as shown in Figure 4. For small numbers
of LEOs the current will be, for practical purposes,
the same as for one.
Since, for current in either direction, voltage drop
across the LED or rectifier is a negligible part of the
supply voltage, current in the capacitor is almost
exactly equal to the AC supply voltage divided by the
reactance of the capacitor. Average capacitor current
is then
1. Ie (AV) =.9 X VRMS/X e
and average half-cycle LED or rectifier current is
= 1/2 10
(AV)
AC
= .45 VRMS/X e
FIGURE 4.
or, for 120 VRMS, 60 Hz operation,
3. ILEO
(AV)
50
FIGURE 3. Seri.. Capacitor Value vs Average LED Current
for 120 VRMS 60 Hz.
FIGURE 1. The Power Resistor Method
(AV)
20 30
1LED ~VeAAGEl (mA)
This method, though sound, results in very high power
dissipation in the resistor since the LED operates on
only 1.6 volts.
2. ILEO
/
u.
Conclusion
Cost of the series capacitor (mylar) will be similar to
the cost of a series power resistor. The shunt diode,
a IN4148 or similar, will cost about two cents; much
less than a series rectifier which must have a several
hundred volt PIV rating.
= 20 mA X CMF
I LEO (AV)
orCMF = - - - 20mA
So, the capacitor method is both lower in cost and
Figure 3 shows the value of the series capacitor
needed for a range of average LED currents assuming
60 Hz, 120 volt power.
lower in heat generation and power consu mption than
the resistor method.
397
I
398
Appnote 9A
litronix
A Siemens Company
,.
APPLYING THE DL-1416
The inputs to the DL-1416 are:
Intelligent Display
CE
CHIP ENABLE (active low)
This determines which device in an array will
actually execute the loading of data. When
the chip enable is in the high state, all inputs are inhibited.
Ao, A, DIGIT ADDRESS
The address to the DL·1416 determines the
digit in which the data will be written.
Address order is right-to-Ieft for positive'
true address.
by Dave Takagishi
This application note is intended to serve as design
and application guide for users of the DL-1416 AIphanumeric Display. The information presented covers: device electrical description and operation, considerations for general circuit designs, multi-digit
display systems and interfacing to the 6800, Z80,
and B080 microprocessors.
Do-Ds DATA LINES
The DL-1416 was designed to provide an easy-to-use
alphanumeric display for the 64 character ASCII
systems. Only twelve interconnect pins plus power
and ground are needed to drive a single four digit
display. The overall package is designed to allow end
stacking of the DL-1416 to form any desired character length display.
The seven data input lines are designed to
accept the 64 ASCII code set. See Table 1
for character set.
WRITE (active low)
Data to be written into the DL-1416 must
be present before the leading edge of write.
The data and address must be stable until
after the trailing edge.
CURSOR (active low)
When the CU is held low, the DL-1416
enables the user to write or remove a cursor
in any digit position. The cursor function
lights all 16 segments in the selected digits
without erasing the data. After the cursor
is removed, the digit will again display the
previously written character.
POSITIVE SUPPLY
TTL compatible + 5 volts
NEGATIVE SUPPLY
Ground
W
ELECTRICAL DESCRIPTION
The on·board electronics of the DL·1416 eliminates
all the traditional difficulties of using displays-segment decoding, driving, and multiplexing. The DL1416 has gone further and provided internal memory
for the four digits. This approach allows the user to
address one of four digits, load the desired data
asynchronously to the multiplex rate and continue.
CU
Figure 1 is a block diagram of the circuitry in the
D L-1416. The unit consists of a
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