1982_SGS_Discrete_Power_Devices_5ed 1982 SGS Discrete Power Devices 5ed

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criterion

(408) 988-6300

manufacturers representatives

3350 Scott Blvd .• Bldg. 44. Santa Clara. CA 95051

ISSUED OCTOBER 1982

INTRODUCTION
This databook contains data sheets on the SGS-ATES range of discrete power devices
for professional, industrial and consumer applications.
Selection guides are provided in the following pages to facilitate rapid identification of
the most suitable device for the intended use.
The information on each product has been specially presented in order that the performance of the product can be readily evaluated within any required equipment design.

SGS-ATES GROUP OF COMPANIES
ITALY
SGS-ATES Componenti Elettronici SpA

INTERNATIONAL HEADQUARTERS
SGS-A TES Componenti Elettronici SpA
Via C. Olivetti 2 - 20041 Agrate Brianza - Italy
Tel.: 039 - 65551
Telex: 330131-330141

Direzione Commerciale Italia

20149 Milano
Via Correggio, 1/3
Tel.: 02 - 4695651
Sales Office :
40128 Bologna
Via Corticella, 231
Tel.: 051 - 326684
00199 Roma
Piazza Gondar, 11
Tel.: 06 - 8392848/8312777

BENELUX
SGS-ATES Componentl Elettronici SpA
Benelux Sales Office
B- 1180 Bruxelies
Winston Churchill Avenue, 122
Tel.: 02 - 3432439
Telex: 24149 B

SINGAPORE
SGS-ATES Singapore (Pte) Ltd.
Singapore 1231
Lorang 4 & 6 - T oa Payoh
Tel.: 2531411
Telex: ESGIES RS 21412

DENMARK
SGS-ATES Scandinavia AB
Sales Office
2730 Herlev
Herlev Torv, 4
Tel.: 02 - 948533
Telex: 35411

SWEDEN
SGS-ATES Scandinavia AB
19501 Marsta
Box 144
Tel.: 0760 - 40120
Telex: 042 - 10932

EASTERN EUROPE
SGS-ATES Componenti Elettronici SpA
Export Sales Office
.
20041 Agrate Brianza - Italy
Via C. Olivetti, 2
Tel.: 039 - 6555287/6555207
Telex: 330131-330141

SWITZERLAND
SGS-ATES Componenti Elettronici SpA
Swiss Sales Offices
6340 Baar
Oberneuhofstrasse, 2
Tel.: 042 - 315955
Telex: 864915
1218 Grand-Saconnex (Geneve)
Chemin Fran~ois-Lehmann 22
Tel.: 022 - 986462/3
Telex: 28895

FRANCE
SGS-ATES France SA.
75643 Paris Cedex 13
Residence "Le Palatino"
17, Avenue de Choisy
Tel.: 01 - 5842730
Telex: 042 - 250938

UNITED KINGDOM
SGS-ATES (United Kingdom) Ltd.
Aylesbury, Bucks

WEST GERMANY
SGS-ATES Deutschland Halbleiter
Bauelemente GmbH
8018 Grafing bei Munchen
Haidling,17
Tel.: 08092-690
Telex: 05 27378
Sales Offices:
3012 Langenhagen
Hubertu5strasse, 7
Tel.: 0511 - 772075/7
Telex: 0923195 .
8000 Munchen 90
Tegernseer Landstr., 146
Tel.: 089 - 6925100
Telex: 05215784
8500 Nu rnberg 30
Ostendstr ... 204
Tel.: 0911-572977/78179
Telex: 0626243
7000 Stuttgart 80
Kalifenweg,45
Tel.: 0711 - 713091/2
Telex: 07 255545

Planar House, Walton Street

Tel.: 0296 - 5977
Telex: 041 - 83245
U.S.A.
SGS-ATES Seminconductor Corporation
Scottsdale, AZ 85251
7117, East 3rd Avenue
Tel.: (602) 990-9553
Telex: SGS ATES SCOT 165808
75248 Dalias, TX
16970 Dallas North Parkway
Building 700, Suite 702
Tel.: (214) 733-1515
Des Plaines, IL 60018
2340, Des' Plaines Ave Suite 309
Tel.: (312) 296-4035
Telex: 282547
Santa Clara, CA 95051
2700, Augustine Drive
Tel.: (408) 727-3404
Telex: 346402
Waltham, MA 02154
240, Bear Hill Road
Tel.: (617) 890-6688
Telex: 923495 WHA
Woodland Hills, CA 91367
6355, Topange Canyon Boulevard
Suite 220
Tel.: (213) 716-6600
Telex: 182863

HONG KONG
SGS-ATES Singapore (Pte) Ltd.
9th Floor, Block N,
Kaiser Estate, Phase III,
11 Hok Yuen St.,
Hung Hom, Kowloon
Tel.: 3-644251/5
Telex: 63906 ESG IE HX

2

TABLE OF CONTENTS

Page

ALPHANUMERICAL INDEX

SELECTION GUIDES BASED ON TECHNOLOGY AND
PACKAGES

4

8

CROSS REFERENCE GUIDE

19

ALPHABETICAL LIST OF SYMBOLS

28

RATING SYSTEMS FOR ELECTRONIC DEVICES

31

QUALITY (SURE 3)

33

HANDLING OF POWER PLASTIC TRANSISTOR

34

ACCESSORIES AND MOUNTING INSTRUCTIONS

38

DATA-SHEETS

47

3

ALPHANUMERICAL INDEX

Type
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO

175
176
177
178
179
180
233
234
235
236
237
238
239
239A
239B
239C
240
240A
240B
240C
241
241A
241B
241 C
242
242A
242B
242C
243
243A
243B
243C
244
244A
244B
244C
433
434
435

Page
48
52
48
52
48
52
56
60
56
60
56
60
64
64
64
64
66
66
66
66
70
70
70
70
72
72
72

72
74
74
74
74
76
76
76
76
78
82
78

Type
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO
BO

Page

436
437
438
439
440
441
442
533
534
535
536
537
538
675A
676A
677
677A
678
678A
679
679A
680
680A
681
682
705
706
707
708
709
710
711
712
905
906
907
908
909
910

82
78
82
86
90
86
90
94
98
94
98
94
98
102
106
102
102
106
106
102
102
106
106
102
106
110
115
110
115
110
115
110
115
120
124
120
124
120
124
4

Type
BO 911
BO 912
BOV 64
BOV 64A
BOV 64B
BOV 65
BOV 65A
BOV 65B
BOW51
BOW 51A
BOW 51B
BOW 51C
BOW 52
BOW 52A
BOW 52B
BOW 52C
BOW 91
BOW 92
BOW 93
BOW93A
BOW 93B
BOW 93C
BOW 94
BOW94A
BOW 94B
BOW 94C
BOX 53
BOX 53A
BOX 53B
BOX 53C
BOX 53E
BOX 53F
BOX 53S
BOX 54
BOX 54A
BOX 54B
BOX 54C
BOX 54E
BOX 54F

Page
120
124
128
128
128
128
128
128
133
133
133
133
138
138
138
138
143
147
151
151
151
151
156
156
156
156
161
161
161
161
165
165
169
173
173
173
173
177
177

Type

Page

Type

Page

Type

Page

BOX 54S
BOX 85
BOX 85A
BOX 85B
BOX 85C
BOX 86
BOX 86A
BOX 86B
BOX 86C
BOX 87
BOX 87A
BOX 87B
BOX 87C
BOX 88
BOX 88A
BOX 88B
BOX 88C
BOY 57
BOY 58
BOY 90
BOY 91
BOY 92
BFX 34
BSS 44
BOW67
BOW 68
BU 125
BU 125S
BU 325
BU 326
BU 326A
BU 326S
BU 406
BU 4060
BU 406H
BU 407
BU 4070
BU 407H
BU 408

181
185
185
185
185
190
190
190
190
195
195
195
195
200
200
200
200
205
205
208
208
208
210
214
218
218
222
226
230
235
240
245
249
255
249
261
255
261
249

BU 4080
BU 426
BU 426A
BU 801
BU 806
BU 807
BU 810
BU 910
BU 911
BU 912
BU 920P
BU 921P
BU 922P
BU 930
BU 930P
BU 931
BU 931 P
BU 932
BU 932P
BUR 50
BUR 51
BUR 52
BUT13
BUT 13P
BUV 20
BUV 21
BUV 22
BUV 23
BUV 24
BUV 25
BUV 46
BUV 47
BUV 47A
BUV 48
BUV 48A
BUW 11
BUW 12
BUW 12A
BUW32

255
267
267
270
275
275
281
285
285
285
290
290
290
293
299
293
299
293
299
301
307
313
319
327
335
335
335
338
338
338
341
343
343
346
346
348
351
351
354

BUW 34
BUW35
BUW36
BUW42
BUW44
BUW45
BUW46
BUX 10
BUX 11
BUX 11 N
BUX 12
BUX 13
BUX 14
BUX 20
BUX 21
BUX 22
BUX 40
BUX 41
BUX 41N
BUX 42
BUX 43
BUX 44
BUX46
BUX 47
BUX 48
BUX 48A
BUX 48B
BUX 48C
BUX 80
BUX 84
BUY 18S
BUY 47
BUY 48
BUY 49P
BUY 49S
BUY 68
BUY 69A
BUY 69B
BUY 69C

359
359
359
364
366
366
366
371
377
383
389
395
397
399
405
411
417
423
429
435
441
443
445
447
449
449
449
449
459
464
466
469
469
474
476
480
484
484
484

5

ALPHANUMERICAL INDEX

(continued)

Type

Page

Type

Page

Type

044 Cl
044C2
044C3
044C4
044 C5
044C6
044 C7
044 C8
044 C9
044 Cl0
044 Cll
044 C12
044 Hl
044 H2
044 H4
044 H5
044 H7
044 H8
044 Hl0
044 Hll
04401
04403
04405
MJ 900
MJ 901
MJ 1000
MJ 1001
MJ 2500
MJ 2501
MJ 2955
MJ 3000
MJ 3001
MJ 4030
MJ 4031
MJ 4032
MJ 4033
MJ 4034
MJ 4035
MJ 10004

487
487
487
487
487
487
487
487
487
487
487
487
489
489
489
489
489
489
489
489
491
491
491
493
493
493
493
495
495
497
495
495
499
499
499
499
499
499
501

MJ 10004P
MJ 10005
MJ 10005P
MJ 11011
MJ 11012
MJ 11013
MJ 11014
MJ 11015
MJ 11016
MJE 340
MJE 350
MJE 700
MJE 701
MJE 702
MJE 703
MJE 800
MJE 801
MJE 802
MJE 803
MJE 13002
MJE 13003
MJE 13004
MJE 13005
MJE 13006
MJE 13007
MJE 13007A
TIP 29
TIP 29A
TIP 298
TIP 29C
TIP30
TIP 30A
TIP 308
TIP 30C
TIP 31
TIP 31A
TIP318
TIP 31C
TIP 32

501
501
501
504
504
504
504
504
504
506
506
508
508
508
508
508
508
508
508
511
511
517
517
522
522
522
524
524
524
524
526
526
526
526
528
528
528
528
530

TIP 32A
TIP 328
TIP 32C
TIP 41
TIP41A
TIP 418
TIP 41C
TIP42
TIP42A
TIP 428
TIP 42C
TIP47
TIP48
TIP49
TIP 50
TIP 51
TIP 52
TIP 53
TIP 54
TIP 100
TIP 101
TIP 102
TIP 105
TIP 106
TIP 107
TIP 110
TI P 111
TlPl12
TIP 115
TIP 116
TIP 117
TIP 120
TIP 121
TIP 122
TIP 125
TIP 126
TIP 127
TIP 130
TIP 131

6

Page
530
530
530
532
532
532
532
534
534
534
534
536
536
536
536
542
542
542
542
545
545
545
547
547
547
549
549
549
551
551
551
553
553
553
558
558
558
563
563

Type

Page

Type

TIP 132
TIP 135
TIP 136
TIP 137
TIP 140
TIP 141
TIP 142
TIP 145
TIP 146
TIP 147
2N 3055E
2N 3439
2N 3440
2N 3713
2N 3714
2N 3715
2N 3716
2N 3789
2N 3790
2N 3791
2N 3792
2N 4234
2N 4235
2N 4236
2N 4895
2N 4896
2N 4897
2N 5038
2N 5039
2N 5151
2N 5152
2N 5153
2N 5154
2N 5190
2N 5191
2N 5192
2N 5193
2N 5194
2N 5195

563
565
565
565
567
567
567
567
567
567
572
576
576
580
580
580
580
584
584
584
584
588
588
588
591
591
591
595
595
601
604
601
604
607
607
607
611
611
611

2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N

Page

5336
5337
5338
5339
5415
5416
5671
5672
5679
5680
5681
5682
5875
5876
5877
5878
6032
6033
6034
6035
6036
6037
6038
6039
6050
6051
6052
6053
6054
6055
6056
6057
6058
6059
6107
6109
6111
6121
6122

615
615
615
615
620
620
624
624
628
628
630
630
632
632
637
637
642
642
647
647
647
651
651
651
655
655
655
660
660
664
664
668
668
668
673
673
673
675
675

Type

Page

2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N

675
679
679
679
683
683
683
683
683
683
673
673
673
685
690
690
690
693
693
693
696
696
696
595
699
699
702
702
705

6123
6124
6125
6126
6282
6283
6284
6285
6286
6287
6288
6290
6292
6354
6386
6387
6388
6486
6487
6488
6489
6490
6491
6496
6544
6545
6546
6547
6702

7
---

...

~

---

---"--

---

,--,--.

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES

SGS power transistors cover a wide range of technologies optimized for almost every application.
These include epitaxial base (medium voltage, high ruggedness, general purpose) epitaxial planar (high
speed with good voltage capability) multiepitaxial planar (high current switching) and multiepitaxial
mesa (high voltage-high power switching).
A wide choice of packages are available.
In order to be easy to use following power transistor selector guides cover only a part of the complete
range. Other voltage ratings and gain selections shown on the full data sheets are equally available.
Many older devices which are less popular for new designs are also in production. Your nearest SGS sales
office or distributor has full details available on request.

8

EPITAXIAL BASE - ICM 1 to 15A; VCEO 22 to 180V
NPN and PNP types
(perfect complementary pairs)
Medium VCEO range (22 to 100V)
Medium switching speed
Medium fT (2 to 20 MHz)
High ruggedness
Monolithic Darlington capability

THERMAL
DXID£

P-VA

X

I

N'

EPITAXIAL BASE
Ptot

@

@

VCSO
(V)

V CEO
(V)

1
1
1
1

40
60
80
100

40
60
80
100

30
30
30
30

TO-220
TO-220
TO-220
TO-220

TlP29
TlP29A
TlP29B
TIP29C

TlP30
TIP30A
TlP30B
TlP30C

15
15
15
15

1.0/4
1.0/4
1.0/4
1.0/4

0.70
0.70
0.70
0.70

1.0/125
1.0/125
1.0/125
1.0/125

2
2
2
2
2
2
2

45
55
60
70
100
90
115

45
45
60
60
80
80
100

25
30
25
30
25
30
30

TO-126
TO-220
TO-126
TO-220
TO-126
TO-220
TO-220

B0233
B0239
B0235
B0239A
B0237
B0239B
B0239C

B0234
B0240
B0236
B0240A
B0238
B0240B
B0240C

25
15
25
15
25
15
15

1.0/2
1.0/4
1.0/2
1.0/4
1.0/2
1.0/4
1.0/4

0.60
0.70
0.60
0.70
0.60
0.70
0.70

1.0/1 00
1.0/200
1.0/100
1.0/200
1.0/100
1.0/200
1.0/200

2
2
2

60
80
100

60
80
100

50
50
50

TO-220
TO-220
TO-220

TIP110
TlP111
TIP112

TlP115
TIP116
T1Pl17

1000
1000
1000

1.0/4
1.0/4
1.0/4

2.50
2.50
2.50

2.0/8
2.0/8
2.0/8

3
3
3

45
60
80

45
60
80

30
30
30.

TO-126
TO-126
TO-126

B0175
B0177
B0179

B0176
B0178
B0180

15
15
15

1.0/2
1.0/2
1.0/2

0.80
0.80
0.80

1.0/100
1.0/100
1.0/100

3
3
3
3
3
3
3
3

55
40
70
60
90
80
115
100

45
40
60
60
80
80
100
100

40
40
40
40
40
40
40
40

TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220

B0241
TlP31
B0241A
TIP31A
B0241B
TlP31B
B0241C
TlP31C

B0242
TlP32
B0242A
TIP32A
B0242B
TlP32B
B0242C
TIP32C

25
25
25
25
25
25
25
25

1.0/4
1.0/4
1.0/4
1.0/4
1.0/4
1.0/4
1.0/4
1.0/4

1.20
1.20
1.20
1.20
1.20
1.20
1.20
1.20

3.0/600
3.0/375
3.0/600
3.0/375
3.0/600
3.0/375
3.0/600
3.0/375

IC
(A)

(W)

Package

PNP

NPN

* Darlington types.

9

hFE
min

ICNCE
(AN)

VCEsat

max (V)

Ic/ls
(AlmA)

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)

EPITAXIAL BASE (continued)

V CBO
(V)

Ic
(A)

4

40

4

60
SO

4 '.
4
80
.4 '100
4
4
4
4
4
4
4
4
4

.'

V CEO
(V)

@

P tot
(W)

Package

40
40
'.' 60 •

TO-126
TO,,126

40

80

40

80

40
.40

100.

NPN

PNP

2N5190

2N5193

.BD677.

:g:~~./

1'6::12:6. .BQ679
TO-126

2N5192

. ·td~l26 .' B068t

2N5195
"'lm68~ ..

25 1.50/2
760 ..1.£iO/3 ..
760 ·1.50l3
20 1.50/2
750 l,50i3.

22
32
45

36
36
36

45

4£i

40

45
60

45
60

50
36

60· .

·40

60
80

50
36

80
180

50

10

TO-126
B0433
B0434
50
TO-126
B0435
B0436
50
TO-126
B0437
B0438
40
1:0-126 . aD61~A. .800161:\
150
TO-220
B0533
B0534
25
TO-126
B0439
B0440
25
TOA?6 .~P677A. .BOO78,o, ".750
TO-220
B0535
B0536
25
TO-126
B0441
B0442
15
·TO~12~. B0619A. ·.~068QA >7.60.
TO-2:20
B0537
B0538
15
TO-:W·· SIlW9.1 'SPllV!}~ lQQO

60

>66.

rb~220·rIP1*l)np125.1000

60
80

4.
4

80

~.

Hm

80

.5 6 0
.. ' 5< 80

510.0

80·..... 40

80.65'. •TO-2Z0.· TjP121 ·TIPl26· 1000

1001·~6.... TO~220 ·.1,P1~2 "I~IPl2'i

'1 .. ......

. . ·.f.· ".•••.4.5

ICNCE
(AN)

min

22
32
45

•' 60.

@

hFE

. ...

I·.

2.0/1
2.0/1
2.0/1
2.013 .
2.0/2
2.0/1

0.60
2.50

;Uip
0.50
0.50
0.60
2;80·
0.80
0.80

2.0/200
2.0/200
2.0/200

2.0/8.
2.0/200
2.0/200

;l.G/? ... ~.8P· •• ·......2;9IS

".

2.0/2
2.0/1

0.80
0.80

2.0/200
2.0/200

',';2.0/8

2:0/3 . .2:.80
2.0/2
'.

2.0/5·>
3.9/3

0.80
2:0

2.0/200
:toA~.>

... !.·•.• ,:OO .• ·............

."

45 '50
T0~22Q l!lQW23
~~1I¥2f1
760. .2.01:$. • . 2~O
6 0 6 0 5 0 to..,220 BDW1Z3A BDW24A .750"2.0/$
:to
' 6 > 8 0 8 0 .50.rO;';22D·BIiIW23B·.BoW24B7S0 12;0/320

a.,Qni .

" .•..

.....

'.'
2,0/8

.. ' '2.0;8

.... ····2;Q/8

......•

•. 7502:0/3>2:02.°./8 ...• ..
500···· 2,P/Ei .·.2:q
2 ..O!lO.'

14Q'

6

160

16060TP~2~QBO)(S3..BDX.54F5002;015

4,0 ........1W/Hf

6
6
6
6
6
6
6
6

45
40
60
60
80
80
100
100

45
40
60
60
80
80
100
100

1.50
1.50
1.50
1.50
1.50
1.50
1.50
1.50

IO:;220B~)(.5iE~D~54E

65
65
65
65
65
65
65
65

TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220

B0243
TIP41
B0243A
TlP41A
B0243B
TlP41B
B0243C
TlP41C

B0244
TIP42
B0244A
TIP42A
B0244B
TIP42B
B0244C
TIP42C

Darlington types.

10

...

······3 0J12
...3:0"2, .. ·

6 .100
6·' "140

. 6150 .160 ••.. 15..•. i()::3~.BOX,63SBDX54S500

II-

1.:50/8
1.50/150
. . 1.50f6 .....

0.60

u

IO.OS600:tOj220BoVll23eB~W24C

1.50/150

.1;6018.

iso.

3013
'"
.··.l(joo> ·3:0/3 · .2.0'

. ..•.

Ic/lB
(AlmA)

VCEsat
max (V)

15
15
15
15
15
15
15
15

2.016.2.0. ··~.o!B . ....
3.0/4
3.0/4
3.0/4
3.0/4
3.0/4
3.0/4
3.0/4
3.0/4

6.0/1000
6.0/600
6.0/1000
6.0/600
6.0/1000
6.0/600
6.0/1000
6.0/600

I'
I
I

h

EPITAXIAL BASE (continued)
Ic
(A)

7
7

V CBO
(V)

V CEO
(V)

80
40

70
30

40
45
60
60

40
45
60

Ptot
(W)

40
40

@

NPN

PNP

TO-220
TO-220

2N6292
2N6288

2N6107
2N6111

2N6386
BOX53
BOX53A
MJ1000
BOX53B
MJ1001
BOX53C

BOX54
BDX54A
MJ90()
BDX54B
MJ901
BOX54C

3.0/12
3.0/12
3.6/12
3.0/12
3.0[12

111"130
TJP131
TIP132

TIP135
TIP136
TIP13'7

4;0/16
4.0/16
4.0/16

BOX8S
BOX85A
BOXjJ5B
BOX85C

BOX86
BOX86A

B"X8~B

4.0(16
4.0/16
4.0/16

B"X86C

4.0l16

e5

TO-3
TO-3
tO~220

10
10

80
100

80
80

150
150

12
12
12
12

45
60
80
100

45
60
80
100

75
75
75
75

@

Package

TO-3
TO-3
TO-3
TO-220
TO~220

TO-220
TO-220

hFE
min

30
30

ICNCE
(AN)

4.0/2
4.0/3

VCEsat
max (V)

1.0
1.0

Ic/lB
(AlmA)

2.0/200
3.0/300
3.0/6

2N6387
MJ3000
2N5877
2N3715
2N6388
IiIIJ30.01
2N5878
2N3716

MJ2501
2N5876
2N3792

B0705
B0707
80709
B0711

B0706
B0708
B0710
B0712

MJ2500
2N5875
2N3791

* Darlington types.

11

3.0112

1000
1000
20
30
1000
1000
20
30

4.0/4
3.0/2

1.0
0.80

5.0/500
5.0/500
5.0110
5.0/20
5.0/500
5.0/500

20
15
15
15

4.0/4
4.0/4
4.0/4
4.0/4

1.0
1.0
1.0
1.0

4.0/400
4.0/400
4.0/400
4.0/400

6.0/10

5.0/20

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)

EPITAXIAL BASE

(continued)

@

IC
(A)

VCSO
(V)

V CEO
(V)

Ptot
(W)

Package

15
15
15
15
15
15
15
15
15

100
45
45
60
60
80
80
100
100

60
45
45
60
60
80
80
100
100

115
90
125
90
125
90
125
90
125

TO-3
TO-220
TO-3
TO-220
TO-3
TO-220
TO-3
TO-220
TO-3

PNP

NPN

2N3055E
B0905
BOW51
B0907
BOW51A
B0909
BOW51B
B0911
BOW51C

MJ2955
B0906
BOW52
B0908
BOW52A
B0910
BOW52B
B0912
BOW52C

* Darlington types.

12

hFE
min

20
15
20
15
20
15
20
15
20

@

Ic/VCE

VCEsat

Ic/Is

(AN)

max (V)

(A/mA)

4.0/4
5.0/4
5.0/4
5.0/4
5.0/4
5.0/4
5.0/4
5.0/4
5.0/4

1.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0

4.0/400
5.0/500
5.0/500
5.0/500
5.0/500
5.0/500
5.0/500
5.0/500
5.0/500

EPITAXIAL PLANAR - ICM 0.5 to 2A; V CEO 45 to 350V
NPN and PNP types
Good voltage capability (V CES up to 400V)
Low saturation voltage
Low leakage
Very high fT (up to 100 MHz)
Very high speed
Moderate ruggedness
Total base-collector passivation

EPITAXIAL PLANAR
Ic
(A)

V CBO
(VI

V CEO
(V)

Ptot

0.5
1
1
1
1

300
45
60
80
120

300
45
60
80
120

200
300
350
450
1.5
1.5
2
2
2

Package

NPN

PNP

20
12
12
12
10

TO-126
TO-126
TO-126
TO-126
TO-39

MJE340
B0135
B0137
B0139
2N5682

200
250
300
350

10
10
10
10

TO-39
TO-39
TO-39
TO-39

2N3440

120
150
50
75
100

120
150
45
60
80

5
5
25
25
25

3
3
3
3

250
200
250
40

150
200
200
40

5
5
5
5
5
5

100
65
150
100
100
100

7
7
7
7
7
7
7
7
7

130
100
150
330
330
200
400
400
400

hFE
min

IcIV cE
(AN)

VCEsat
max (V)

MJE350
B0136
B0138
B0140
2N5680

30
40
40
40
40

0.05/10
0.15/2
0.15/2
0.15/2
0.25/2

0.5
0.5
0.5
1.0

0.50/50
0.50/50
0.50/50
0.50/50

2N5415
2N3439

30
40
30
40

0.05/10
0.02/10
0.05/10
0.02/10

2.5
0.5
2.5
0.5

0.05/5
0.05/4
0.05/5
0.05/4

TO-39
TO-39
TO-126
TO-126
TO-126

BSW67
BSW68
B0375
B0377
B0379

B0376
B0378
B0380

15
15
40
40
40

1.0/5
1.0/5
0.15/2
0.15/2
0.15/2

1.0
1.0
1.0
1.0
1.0

1.0/150
1.0/150
1.0/100
1.0/100
1.0/100

10
25
10
6

TO-39
TO-126
TO-39
TO-39

BU125S
BU325
BUY49S
2N4234

30
30
40
30

0.25/3
0.50/5
0.50/5
0.25/1

1.5
1.5
0.2
0.6

0.50/50
0.50/50
0.50/50
1.0/125

60
60
80
80
100
100

5
5
7
11.7
6
6

TO-39
TO-39
TO-39
TO-39
TO-39
TO-39

BFX34
2N4897
2N5154
2N5338
2N5339

40
40
40
70
20
40

2.0/2
2.0/2
2.0/2
2.50/5
5.0/2
5.0/2

1.0
1.0
1.0
0.7
1.2
1.2

5.0/500
5.0/500
5.0/500
2.50/250
5.0/500
5.0/500

60
60
120

10
10
10
60
60
10
60
60
50

TO-39
TO-39
TO-39
TO-220
TO-220
TO-39
TO-220
TO-220
TO-3

BU125
BUY68
BUY47
BU4070
BU407
BUY48
BU4060
BU406
BUY18S

15
40
15
8
10
15
8
10
20

5.0/2
1.0/1
5.0/5
5.0/1
5.0/1
5.0/5
5.0/1
5.0/1
1.0/5

1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0

5.0/500
5.0/500
5.0/500
5.0/650
5.0/500
5.0/500
5.0/650
5.0/500
5.0/500

150
170
200
200

(WI

2N5416

BSS44
2N5153

* Darlington types.

13
----

-~".---~

lellB
(AlmA)

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)

MUL TIEPITAXIAL PLANAR - ICM 1 to 70A; V CEO 75 to 450V
range up to 70A
Good hFE linearity
Very low leakage
High switching speed
High E'/b capability
Total base-collector passivation
Ic

MULTIEPITAXIAL PLANAR
IC
(A)

Vcso
(V)

V CEO
(V)

Ptot
(W)

Packa~e

NPN

hFE

IC/VCE

VCE,at

min

(AN)

max (V)

IC/IS
(A/mA)

TO-220
TO-220
TO-220
26

350
400
450

10
10
10
12

100
120
150
300

80
100
120
250

60
60
140
120

TO-3
TO-3
TO-3
TO-3

BOY91
BOY90
2N6354
BUX42

20
20
20
8

10.0/5
10.0/5
5.0/2
6.0/4

0.5
0.5
0.5
1.2

5.0/500
5.0/500
5.0/500
4.0/400

15
18
15

150
220
250

110
160
200

140
120
120

TO-3
TO-3
TO-3

2N6496
BUX41N
BUX41

12
8
8

8.0/2
12.0/4
8.0/4

1.0
1.2
1.2

8.0/800
8.0/800
5.0/500

20
20
20
20
20
20

120
150
160
220
250
300

75
90
125
160
200
250

140
140
120
150
150
150

TO-3
TO-3
TO-3
TO-3
TO-3
TO-3

2N5039
2N5038
BUX40
BUXllN
BUXll
BUX12

20
20
8
10
10
10

10.0/5
12.0/5
15.0/4
15.0/4
12.0/4
10.0/4

1.0
1.0
1.2
0.6
0.6
1.0

10.0/1000
12.0/1200
10.0/1000
8.0/800
6.0/600
5.0/500

25
25
25

120
160
160

80
125
125

175
175
150

TO-3
TO-3
TO-3

BOY57
BOY58
BUX10

20
20
10

10.0/4
10.0/4
20.0/4

1.4
1.4
0.6

10.0/1000
10.0/1000
10.0/1000

'* Darlington types.

14

MU'LTIEPITAXIAL PLANAR (continued)
@

@

Ic
(A)

V CBO
'(V)

VCEO
(V)

Ptot

30
30
40
40
40
40
40

120
150
150
250
250
300
300

90
120
120
200
200
250
250

140
140
140
250
350
250
350

TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3

2N5671
2N5672
2N6033
BUV21
BUX21
BUV22
BUX22

20
20
10
10
10
10
10

50
50
50
60
60

120
160
160
300
350

90
125
125
200
250

140
250
350
350
350

TO-3
TO-3
TO-3
TO-3
TO-3

2N6032
BUV20
BUX20
BUR51
BUR52

. 70

200

125

350

TO-3

BUR50

Package

(W)

NPN

V CEsat
max (V)

Ic/IB
(A/rnA)

20.0/5
20.0/5
40.0/2
25.0/4
25.0/4
20.0/4
20.0/4

0.75
0.75
1.0
0.6
0.6
1.0
1.0

15.0/1200
15.0/1200
40.0/4000
12.0/1200
12.0/1200
10.0/1000
10.0/1000

10
10
10
15
15

50.0/2.6
50.0/4
50.0/4
50.0/4
40.0/4

1.3
0.6
0.6
1.0
1.8

50.0/5000
25.0/2500
25.0/2500
30.0/2000
25.0/2000

15

50.0/4

1.0

35.0/2000

hFE

min

i

15

IcNcE
(AN)

SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES
(continued)

MUL TlEPITAXIAL MESA - ICM 4 to 30A; V CEO 325 to 600V
NPN and PNP types
High voltage (V CBO up to 1000V)
High power
Very good ISlb and ES/b performance
High switching speed
High fT (20 MHz)
Good stability

GLASS

Al
I

THERMAL
OXIDE

P-VAPOX
I

I

MUL TIEPITAXIAL MESA
Ic
(A)

4
6
6
6
6
6
8
8
8
8.5

vcso
(V)

V CEO
(V)

P tot
(W)

@

Package

700

400

800
800
800
900
900
450
700
850
850

375
375
400
400
400
400
400
400
400

75 TO-220
75 TO-3
113 50T-93
600 TO-3
75 TO-3
113 50T-93
120 TO-3
80 TO-220
125 TO-3
107 TO-3

325
325
400
400
400
400
400
450

120
100
125
125
150
100
100
125

325
350
400
400
400
400
400
450
450
450
500
600
400
325
325
400

150
150
150
175
175
175
175
160
175
175
350
175
350
250
350
250

10
400
10
800
10
500
10
800
10
450
10
800
10
1000
900
10
400
15
400
16
450
16
15
500
15
800
15 8501450
15
850
$00
15.
15
900
15
1000
15
500
15
1000
20
450
30
400
30
400
450
20

TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO··3
TO-3

TO:--$.

TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3
TO-3

* Darlmgton types, Multlepltaxlal planar

NPN

PNP

MJE13005
BU326
BU426
BU326S
BU326A
BU426A
BUX44
MJE13007
2N6545
BUX47
BUX43
BUY69B
BUW34
BUW35
BUX14
BUX80
BUY69A
BUW36
BUX13
BU930
BU931
BUW44
BUW45
BUX48
2N6547
8U932.·
BUW46
BUX48A
BUX25
BUX48B
BUX24
BUV23
BUX23
BUV24
_ TYPical.

16

hFE
min

10
25.
25,
3.5
25.
25.
8
8
4
3
8
15
15
15
8
5
15
15

@

IcNcE
(AN)

VCEsat
max(V)

Ic/Is
(A/rnA)

1.0/5

0.6
1.5
1.5
1.5
1.5
1.5

2.0/500
2.50/500
2.50/500
2.50/500
2.50/500
2.50/500

1.00/5
0.60/5
4.0/5
1.00/5
0.60/5
4.0/4
2.0/5
8.0/5
9.0/3

5.0/4
2.50/10
BUW32
1.0/5
1.0/5
6.0/4
5.0/1.5
2.50/10
1.0/5
8.0/4
8
10.0/1.8
4.0
10.0/1.8.
40
6.0/1.5
6
7
7.0/1.5
BUW42
15.0/3
5
5
15.0/5
40 . 10,0/1.8
7
7.0/1.5
5
12.0/3
8
8.0/4
15
1.0/10
12.0/4
8
16.0/4
8
16.0/4
8
12.0/4
8

1.5
1.5
1.5
1.5

4.0/800
5.0/1000
5.0/1000
6.0/1200

2.0
3.3
1.5
1.5
1.6
1.5
3.3
1.5
1.5
1,8
1.8
3.0
1.5
1.5
1.5
1;8
1.5
1.5
1.0
2.0

5.0/1000
8.0/2500
5.0/1000
5.0/1000
6.0/1200
5.0/1000
8.0/2500
5.0/1000
8.0/1600
8.0/100
.8.0/100
10.0/2000
10.0/2000
10.0/2000
10.0/2000

1.0
1.0
1.0
1.0

12.0/2400
16.0/3200
16.0/3200
12.0/2400

.8:0/150.

10.0/2000
8.0/1600
8.0/1600
8.0/2500

Recent product introductions
EPITAXIAL BASE
@
Ic
(A)

VCSO
(V)

VCEO
(V)

Ptot
(W)

Package

PNP

NPN

hFE

min.

··
··· Hi
··
12

12
12

t6
16
30

60
80
100

60
SO

60
SO
100
6,0
80
HlO

100
60
60
.90
• '30 1 90
• 30;; '·.l~O 120
10 "\lO', Sf)
80
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60
20
60
20
80
80
20
100
100

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SOT~93

1000
1000
SOT~93
1000
TO':'3
MJ4030 MJ4033 1000
MJ4031
MJ4034 1000
TO""3
TO-3
MJ4032
I\IIJ4035 1000
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TO~3
MJ'J1014 MJ11Q~~ '. 200
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2N6285
2N6282
750
160 TO-3
2N6286
2N6283
750
160 TO-3
2N6287
2N6284
750
160 TO-3

126
125
125
150
150
150
200
200

SOT-93

POV65
BOV65A
BOV65B

BOV64
BOV64A
BOV$4B

laO

* Darlington types

MULTIEPITAXIAL PLANAR
IC

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(A)

(V)

Package

NPN

* Darlington types

17

@
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(AN)

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max. (V)

Ic/Is
(A/mA)

6.0/4
'5.0/4
5:0/4

2.0

5.()/20
5.0/20
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16/80

10/3
1013
10/3
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30/5
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PAGE

78
82
78
82
86
90
86
90
94
98
94
98
94
98
70
70
70
70
72
72
72
72
120
120
120
124
124
124
78
82
94
98
94
98
94
98
94

TYPE

BD 586
SO 587
SO 588
BD 589
BD 590
SO 595
BO 596
BO 597
SO 598
BD 599
SO 600
SO 601
BD 602
BO 605
SO 606
SO 607
SO 608
BO 609
BO 610
SO 633
BO 634
SO 635
SO 636
BO 637
SO 638
S0643
BO 644
B0645
BO 646
SO 647
SO 648
SO 649
SO 650
SO 663
SO 664

98
94
98
94
98
110
115
110
115
110
115
110
115
120
124
120
124
120
124
94
98
94
98
94
98
161
173
161
173
161
173
161
173

102
106

TYPE

SGS-ATES PAGE
NEAREST

BD 677
SO 677
BD 677A SO 677A
BD 678
BO 678
BD 678A BD 678A
BD 679
BD679
BD 679A B0679A
BD 680
BD 680
BD 680A BO 6S0A
BD 681
B0681
BD 68280682
BD 695A
BD 696A
BD 697
BD 697A .
BD 698
BD 698A .
BD 699
BD 699A
BD 700
BD 700A
BD 701
BD 702
BD 705
BD 706
BD 707
BD 708
BD 709
BD 710
BD 711
BD 712
BD 733
BD 734
BD 735
BD 736
BD 737
BD 738
BD 795

102
102
106
106
102
102
106
106
102
106

173
161
161
173
173

115
94
98
94
98
94
98

TYPE

BD 796
BD 797
BD 798
BD 799
BD 800
BD 801
8D802
BD805
BD 806
BD 807
BD 808
BD 809
BD 810
BD 895
BD 896
BD 897
BD 898
BD 899
BD 900
BD 901
BD 902
BD 905
BD 906
BD 907
BD 908
BD 909
BD 910
BD 911
BD 912
BD 933
BD 934
BD 935
SD 936
SD 937
BD 938
BD 939
BD 940

SGS-ATJ::S PAGE
NEAREST

SO 706
SO 707
SO 708
SO 709
SO 710
. SO 711
SD712
8D905
80.906

• Data sheet available on request

21

115
110
115
110
115
110
115
120
124
120
124
120
124
151
156
151
151
151
156
151
156
120
124
120
124
120
124
120
124
64
66
64
66
64
66
64
66

TYPE

BD943
BD 944
BD 945
BD946
BD 947
BD 948
BD 949
BD 950
BD951
BD 952
BD 953
BD 954
BDT 62

SGS;';ATl:S
PAGE
NE.AREST

.BO 5~3
BO q34
80535
BO 534
SO 533
80534
SO 241A
242A

So

94
98
94
98
94
98
70
72
70
72
70
72

BDT 91

128
128
128

BDW

CROSS REFERENCE GUIDE

TYPE

22C~()W~.~C

BOW
BOW 23BDW~3
BOW 23A·.SciVV23A
BOW 23B~OW23B
BOW 23CBOIN 23C
BOW24
BOW~4
BOW 24ABDW~4A

TYPE

BOW
BOW
BOW
BOW
BOW
BOW
BOW
BOW
BOW

51CBO\;V.51C
52
BOW 52
52A?:3DW$2~
52B.BOW52B

52C.I3()\lV~26

TYPE
··i ... ··i.

*
*
*

BOW 74

SDWSl

156
156
156
156
143

:~~ ~~~g~:~"i ~~~

133
133
133
133
138
138
138
138

53IIDW2:r .
53A .S[)W23A

53BBDV\I:?j~

53CElQW23C

:g:::::~~~

BOW 93A.60W93A
BOW 93BBriW~3B
BOW 93C aDW93C
BOW 94
BOW 94
BOW 94A •
94A
BOW 94B BDW.94B
BOW 94CBDW94C
BOX 3380><53·
BOX 33A.BOX53A

151
151
151
156
156
156
156
161
161

BOX
BOX
BOX
BOX
BDX

34eOX54

538I)X>53··

173
173
173
173
161

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161

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:~~ ~~~:·g~:i~ ~~~
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80)(54B

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161

63C 80X6.3C
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161
173
173
173

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BOW
BOW
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:~~ ~~c'~g~:~~. ~~~
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151

:~~ ~~~;:~~~~;~ ~~~

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:~~ ~~AI::g~:::;

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BDX 63B.BOX86C
BDX 64:.aokaSA

• Data sheet available on request

22

64ABb·~:fS8B

.

>130W94

:g:;:~L1~~

BOW91

:~~ ~:~:~~;:~

:g: :::::ei:~

(continued)

173
173
173
190
190
190
185
185
185
200

BDX
BDX 64B
BDX 65SC>X87A
BDX 65A.80XS7Ef
BDX 65BBDX81C
BOX 70
BOX11
BDX 77B~709 . . . ..
BDX 7880710
BDX 83
BO)(87<.
BDX 83A BDX87A
BDX 83B~f)(878
BDX 83C.BDX87C
BDX 84
BdX8!i .
BDX 84ABDX8SA
BDX 84B . 8m<888
BDX 84C .BD>< .SSC
BDX 85 ·.~O~ 85···
BDX 85ABDX85A
BDX 85 B .·.·~6X85B
BDX 85CB[)X8SC
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solene

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:~~::~~;:i

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BDX
BDX
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BDX
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87B • SDis7B·
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88
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88BBDX8SS.
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m~~ '~i$~i

200
200
195
195
195
110
115
195
195
195
195
200
200
200
200
185
185
185
185
190
190
190
190
195
195
195
195
200
200
200
200

TYPE

SGS-ATES
PAGE
NEAREST

BOX 96
~OW22C
BOY 57
BOY 57
BOY 58
BOY 58.
BOY 90
BOY 90
BOY 91
BOY 91
BOY 92
BOY 92
BFX 34
BFX 34
BSS 44
BSS44
BSW 67
BSW67
BSW 68
BSW.68
BU 104
BU 606
BU 1040 BU 601;)0
BU 1040P BU 4060
BU 106
.BU 697
BU 107
BU607
BU 109
BU 607
BU 1090 80.6070
BU 1090P Bt) 4070
BU 110
BU60l
BU 111
BUW24
BU 125
BU 125.
BU 125S BUS 125S
BU 126
BU 126.
BU 129
BU6G6
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126
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B\,.IW25
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BU 311
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BU 312
607
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BU920
BU 322A B.U922
BU 323
80930
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BU 326
13U326S
BU 326ABU326A
BU 326S (8\;1326S

au

au

*
205
205
208
208
208
210
214
218
218
*
*
255
*
*

··

255
*

*
222
226
*

*
*
*
484

*
*

·

*
*
293
293
245
240
245

TYPE

BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
BU
'BU
BU
BU
BU
BU
BU
BU
BU

361
406
4060
406H
407
4070
407H
408
4080
411
412
426
426A
606
6060
607
6070
608
6080
807
810
910
911
912
920
920P
921
921 P
922
922P
930
930P
931
-au 931P
BU 932
BU 932P
BUR 20

SGS-ATES
NEA.REST .• PAGE

BUW 35
'. 9U406
BU4060
BU 4G6H
au 407
au 4010
BU407H
BU408
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.SU 6070
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9

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8U922"
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au 930

au 930P
Bua3{"
$)31P

sO

".SU932

BU932~

xeuV20'

* Data sheet available on request

23

359
249
255
249
261
255
261
249
255
*
*
267
267
*

•

··
·

*
275
281
285
285
285
*
290

·

290

*
290
293
299
293
299
293
299
335

TYPE

BUR 21
BUR 22
BUR 23
BUR 24
BUR 50
BUR 51
BUR 53
BUS12
BUW 12A
BUS13
BUS13A
BUT13
BUT 13P
BUV 20
BUV 21
BUV 22
BUV 23
BUV 24
BUV 25
BUV 46
BUV 47
BUV 47A
BUV 48
BUV 48A
BUW 11
BUW 12
BUW 12A
BUW24
BUW 25
BUW26
BUW32
BUW34
BUW35
BUW 36
BUW42
BUW44
BUW45

sQS-ATES
PAGE
NE/lt,RESl:

BUV 21'·
.. BUV22.
8UV23.
BUV24
BUR SO
·BUR 51
BUR 52
BUW35
.BUW 3j;!
Sm<48 .

"B\jW4~.·
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,' '

BIJT 13.
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BlJV25
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BUV47 .
BU'II'.4.1A
BUV4f&" .
BUV48A

BUW 11 . .
,·auW12.··
BUW 12A

·.8tJW.24
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,,'
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i~i:;
.·lJtJy.146.

335
335
338
338
301
307
313
359
359
449
366
319
327
335
335
335
338
338
338
341
343
343
346
346
348
351
351

*
*
*
354
359
359
359
364
366
366

CROSS REFERENCE GUIDE

TYPE

TYPE

BUW46
BUW 57
BUW 58
BUW66
BUW 67
BUW 73
BUX10
BUX lOS
BUX 11
BUX 11 N
BUX 11S
BUX 12
BUX 13
BUX 14
BUX 15
BUX 16
BUX 16A
BUX 16B
BUX 16C
BUX 17
BUX 17A
BUX 17B
BUX 17C
BUX 18
BUX18A
BUX 18B
BUX 18C
BUX 20
BUX 20S
BUX 21
BUX 21S
BUX 22
BUX 23
BUX 24
BUX 25
BUX 28
BUX 29

BUX 37
BUX 40
BUX 40A
BUX 40S
BUX 41
BUX 41N
BUX41S
BUX 42
BUX 43
BUX 44
BUX 45
BUX 46
BUX 47
BUX 48
BUX 48A
BUX 48B
BUX 48C
BUX 77
BUX 78
BUX 80
BUX 82
BUX 84
BUX 97
BUX 97A
BUX 97B
BUY 18S
BUY 47
BUY 48
BUY 49P
BUY 49S
BUY 57
BUY 58
BUY 68
BUY 69A
BUY 69B
BUY 69C
044 Cl

",K1'J,)C:l,l:11\1:

(continued)

TYPE

417
417
417
423
429
423
441
443
359
445
447
449
449
449

*

*

*

429
484
484

• Data sheet available on request

24

044 C2
044 C3
044 C4
044 C5
044 C6
044 C7
044 C8
044 C9
044 Cl0
044 Cll
044 C12
044 Hl
044 H2
044 H4
044 H5
044 H7
044 H8
044 Hl0
044 Hll
04401
04403
04405
MJ 424
MJ 425
MJ 900
MJ 901
MJ 1000
MJ 1001
MJ 2500
MJ 2501
MJ 2955
MJ 3000
MJ 3001
MJ 3029
MJ 3030
MJ 3040
MJ 3041

487
487
487
487
487
487
487
487
487
487
489
489
489
489
489
489
489
489
491
491
491
359
359
493
493
493

TYPE

saS-ATES
PAGE
NEAREST

MJ 3042
MJ 4030
MJ 4031
MJ 4032
MJ 4033
MJ 4034
MJ 4035
MJ 10000
MJ 10001
MJ 10002
MJ 10003
MJ 10004
MJ10004P
MJ 10005
MJ 10005P
MJ 11011
MJ 11012

BU 920P
MJ 4030
MJ 4031
MJ 4032
MJ 4033
MJ 4034
MJ 4035
BU 930
BUB3r
BU 920P
BU 921P
MJ 10004
MJl0004P
MJ 10005
MJl000SP
MJ 11011
MJ 11012

290
499
499
499
499
499
499
293
293
290
290
501
501
501
501
504
504

MJ
MJ
MJ
MJ

MJ 11013
MJ 110.14

504
504
504

11013
11014
11015
11016

MJ 10012
MJ 13014
MJ13015
MJ 13330
MJ 13331
MJ 13332
MJ 13333
MJ 13334
MJE 340
MJE 350
MJE 700
MJE 701
MJE 702
MJE 703
MJE 800

MJ 11015
MJ 11016
BU 931
BUW 34
BUW 34
BUX 41
BUX42
BUV 23
BUV24
BUV 24
MJE 340
MJE 350
MJE 700
MJE 701
MJE)02
MJE 703
MJE 81)0

504
293
359
359
423
435
338
338
338
506
506
508
508
508
508
508

TYPE

SaS-ATES
PAGE
NEAREST

MJE 801
MJE 801
MJE 802 MJE 802·
MJE 803 MJE 803
MJE 13002 MJE 13002
MJE13003 MJE 13003
MJE 13004 MJE 13004
MJE13005 MJE13005
MJE 13006 MJE13006
MJE13007 MJE13007
MJE 13007A MJE 13007A
SE 9300
BOW93A
SE 9301
80W93B
SE 9302
BOW 93C
SE 9303 .BOX 87A
SE 9304
BOX87B
SE 9305
BOX 87e
SE 9400
BOW94A
SE 9401
BOW94B
SE 9402
BDW94C.
SE 9403
BOX 88A
SE 9404
BOX 88B
SE 9405
BOX 88C
TIP 29
TIP29
TIP 29A
TIP 29A
TIP 29B .TIP29B
TIP 29C
TIP29C
TIP 30
TIP30
TIP 30A ·ttP 30A
TIP30e ..
TIP 30B
TIP 30C
TIP 30C
TIP;31 .
TIP 31
TIP 31A
TIP 31A
TIP 31B
TIP31B
TIP 31C
TIP 31e
TIP 32
TIP 32
TIP32A .
TIP 32A
TIP.328··
TIP 32B
25

508
508
508
511
511
517
517
522
522
522
151
151
151
195
195
195
156
156
156
200
200
200
524
524
524
524
526
526
526
526
628
528
528
528
530
530
530

TYPE

SaS-ATES
PAGE
NEAREST

TIP 32C
TIp32C
TIP 41
TIP 41
TIP 41A
TIP 41A
TIP 41B
TIP 41B
TIP 41C
Tlp41C
TIP 42
TIP42
TIP 42A
TIP42A
TIP 42B
TIP 42B
TIP 42C
TIP42C
TIP 47
TIP 47
TIP 48
TIP 48
TIP49
TIP 49
TIP 50
TIP50
TIP 51
TIP 51
TIP 52
TIP 52
TIP 53
TIP53
TIP 54
TIP 54
TIP 73
B0905
TIP 73A
130907
TIP 73B
B0909
TIP 73C
BO 911
TIP 74
80906
TIP 74A
80908
TIP 74B
80910
TIP 74C
B0.912
TIP 100
BOX53A
TIP 101
BOX 63B
TIP 102
BOX 5SC
TIP 106
BOX~4A
TIP 106
BDX?4B
TIP 107 ·.BOXf>4 C
TIP 110
TIP1~O
TIP 111 . TIP 111
TIP 112
TIP 112
TI P 115 ··riP115
TIP 116
TIP l1i.
TIP 117 ••.• TIPj17

530
532
532
532
532
534
534
534
534
536
536
536
536
542
542
542
542
120
120
120
120
124
124
124
124
161
161
161
173
173
173
549
549
549
551
551
551

CROSS REFERENCE GUIDE

(continued)

TYPE

.S.G$~AT$S:I

TYPE
"

TIP 120
TIP 121
TIP 122
TIP 125
TIP 126
TIP 127
TIP 130
TIP 131
TIP 132
TIP 135
TIP 136
TIP 137
TIP 140
TIP 141
TIP 142
TIP 145
TIP 146
TIP 147
TIP 150
TIP 151
TIP 152
TIP 660
TIP 661
TIP 662
2N 3055E
2N 3418
2N 3419
2N 3420
2N 3421
2N 3439
2N 3440
2N 3445
2N 3446
2N 3553
2N 3554
2N3713
2N 3714

553
553
553
558
558

2N
2N
2N
2N
2N

3715
3716
3719
3720
3789

:i~~Er

B8544" '.
2N 3789

• Data sheet available on request

26

580
580
214
214
584
584
584
584
480
480
480
588
588
588
591
591
591
595
595
359
607
607
607
611
611
611
359
94
94
94
214
480
469
615
615
615
615

2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N

"SA'FtEST
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,
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PAGE

"

B[)70l"
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5490
5492
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5494
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5496
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5672 . 2N.5~72
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5682 .···.BSVV67
5758 . BDW51C
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5781
5782
5783
5784
5785
5786
5875
5876
2I:'J5876
5877
5878
5879
5880
5881
5882
6032
6033
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6034
6035
6036
6037
2N6037
6038
6039
2N6D3!:1
6040
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6041 :·Bo~M~i.
6042 .: a6><54t
6043
6044
6045

Bsw.e7'i

····:~~···!t·.··········

;~ii:5<

]~~~!~
·sDW51.A,

~3~:~~

i!~~

'2N()q:3~

'~~~J

110
110
110
110
624
624
218
218
133
214
214
214
480
480
480
632
632
637
637
138
138
133
133
642
642
647
647
647
651
651
651
173
173
173

:::

SGS-:-ATES

TYPE

2N
2N
2N
2N
2N

NEA"EST

6050
6051
6052
6053
6054

·2N~050

. 2N6Q51
2N6Q52

2Ne053

2Ne054
,", ...

PAGE

655
655
655
660
660

2N
2N 6057

2N 6107
2N 6111
2N 6121

2N 6251

683
683
683
683
683
673

2N 6287
2N 6288

TYPE

TYPE

2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N

2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N
2N

6292
6306
6307
6308
6338
6339
6340
6341
6354
6383
6384
6385
6386
6387
6388
6469
6470
6471
6472
6473
6475
6486
6487
6488
6489
6490
6491
6496
6511
6512
6513
6514
6531
6532
6544
6545
6546

6547
6569
6573
6574
6575
6594
6648
6649
6650
6666
6667
6668
6702

133
110

696
595
359
359
359
359
161
161
699
699

27
- ..-

-----~---

~------.-----~

.----~--

ALPHABETICAL LIST OF SYMBOLS
B

Bandwidth
Collector-base capacitance (emitter open to a.c. and d.c.)

d

Distortion
Second breakdown energy (with base-emitter junction reverse
biased)
Frequency
Transition frequency
Voltage gain
Common emitter, small-signal value of the short-circuit forward
current transfer ratio
Common emitter, static value of the forward current transfer ratio
Common emitter, static value of the forward current transfer matched
pair ratio
Base current

IB1

Turn-on current

IB2

Turn-off current

IBF

Base forward current

IBFM

Base forward peak current

IBM

Base peak current

IBR

Base reverse current

IBRM

Base reverse peak current

IC

Collector current

ICBO

Collector cutoff current with emitter open

ICEO

Collector cutoff current with base open

ICER

Collector cutoff current with specified resistance between emitter
and base
Collector cutoff current with emitter short-circuited to base
Collector cutoff current with specified reverse voltage between
emitter and base
Collector peak current
Drain current
Emitter current
28

Emitter cutoff current with collector open
Continuous DC forward current
Peak forward current
Continuous DC reverse current
Second breakdown collector current (with base-emitter junction
forward biased)
Output power of a specified circuit
Total power dissipation
Base dropping resistance
Resistance between base and emitter
Collector dropping resistance
Emitter dropping resistance
Load resistance
Thermal resistance
Rth j-amb

Thermal resistance junction-to-ambient

Rth j-ease

Thermal resistance junction-to-case
Time

Tamb

Ambient temperature

Tease

Case temperature
Fall time
Junction temperature
Turn-off time
Turn-on time

t,

Rise time
Storage time
Storage temperature
Base-emitter voltage

VBE (sat)

Base-emitter saturation voltage

V(BR)CBO

Collector-base breakdown voltage with emitter open

V(BR) CEO

Collector-emitter breakdown voltage with base open

29

ALPHABETICAL LIST OF SYMBOLS (continued)

V(BR)CER

Collector-emitter breakdown voltage with specified resistance

V(BR)CES

Collector-emitter breakdown voltage with emitter short-circuited to
base

V(BR)CEV

Collector-emitter breakdown voltage with specified reverse voltage
between emitter and base

V(BR) EBO

Emitter-base breakdown voltage with collector open

V CB

Collector-base voltage

VCBO

Collector-base voltage with emitter open

VCE

Collector-emitter voltage

VCEK

Knee voltage at specified condition

VCEO

Collector-emitter voltage with base open

V CEO (sus)

Collector-emitter sustaining voltage with base open

VCER

Collector-emitter voltage with specified resistance between emitter
and base

VCER (sus)

Collector-emitter sustaining voltage with specified resistance between
emitter and base

VCE (sat)

Collector-emitter saturation voltage

VCES

Collector-emitter voltage with emitter short-circuited to base

V CEV

Collector-emitter voltage with specified reverse voltage between
emitter and base

VCEV(sus)

Collector-emitter sustaining voltage with specified reverse voltage
between emitter and base

V CEX (sus)

Collector-emitter sustaining voltage with specified circuit between
emitter and base

VEB

Emitter-base voltage

VEBO

Emitter-base volta:ge with collector open

VF

Continuous DC forward voltage

Vi

Input voltage of a specified circuit

VR

Continuous DC reverse voltage

VRM

Peak reverse voltage

ZBE

Impedance between base and emitter

Zi

Input impedance

30

RATING SYSTEMS FOR ELECTRONIC DEVICES

A. DEFINITIONS OF TERMS USED

a. Electronic device. An electronic tube or valve, transistor or other semiconductor
device.
Note: This definition excludes inductors, capacitors, resistors and similar components.
b. Characteristic. A characteristic is an inherent and measurable property of a device. Such a property may be electrical, mechanical, thermal, hydraulic, electro-magnetic, or nuclear, and can be expressed as a value for stated or recognized conditions. A characteristic may also be a set of related values, usually shown in graphical form.
c. Bogey electronic device. An electronic device whose characteristics have the published nominal values for the type. A bogey electronic device for any particular
application can be obtained by considering only those characteristics which are
directly related to the application.
d. Rating. A value which establishes either a limiting capability or a limiting condition
for an electronic device. It is determinated for specified values of environment and
operation, and may be stated in any suitable terms.
Note: Limiting conditions may be either maxima or minima.
e. Rating system. The set of principles upon which ratings are established and which
determines their interpretation.
Note: The rating system indicates the division of responsibility between the device
manufacturer and the circuit designer, with the object of ensuring that the working
conditions do not exceed the ratings.

B. ABSOLUTE MAXIMUM RATING SYSTEM

Absolute maximum ratings are limiting values of operating and environmental conditions applicable to any electronic device of a specified type as defined by its published
data, which should not be exceeded under the worst probable conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability of the device, taking no responsibility for equipment variations, environmental
variations, and the effects of changes in operating conditions due to variations in the
characteristics of the device under consideration and of all other electronic devices in
the equipment.
The equipment manufacturer should design so that, initially and throughout life, no
absolute maximum value for the intended service is exceeded with any device under
the worst probable operating conditions with respect to supply voltage variation,
equipment component variation, equipment control adjustment, load variations,
signal variation, environmental conditions, and variations in characteristics of the
device under consideration and of all other electronic devices in the equipment.

31

RATING SYSTEMS FOR ELECTRONIC DEVICES

(continued)

C. DESIGN - MAXIMUM RATING SYSTEM
Design-maximum ratings are limiting values of operating and environmental conditions applicable to a bogey electronic device of a specified type as defined by its published data, and should not be exceeded under the worst probable conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability of the device, taking responsibility for the effects of changes in operating conditions due to variations in the characteristics of the electronic device under consideration.
The equipment manufacturer should design so that, initially and throughout life, no
design-maximum value for the intended service is exceeded with a bogey device under the worst probable operating conditions with respect to supply-voltage variation,
equipment, component variation, variation in characteristics of all other devices in the
equipment, equipment control adjustment, load variation, signal variation and environmental conditions.

D. DESIGN - CENTRE RATING SYSTEM
Design-centre ratings are limiting values of operating and environmental conditions
applicable to a bogey electronic device of a specified type as defined by its published
data, and should not be exceeded under normal conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability of the device in average applications, taking responsibility for normal changes
in operating conditions due to rated supply-voltage variation, equipment component variation, equipment control adjustment, load variation, signal variation, environmental
conditions, and variations in the characteristics of all electronic devices.
The equipment manufacturer should design so that, initially, no design-centre value
for the intended service is exceeded with a bogey electronic device in equipment operating at the stated normal supply-voltage.
The Absolute Maximum Rating System is commonly used for semiconductor devices.

32

QUALITY

• 100% ELECTRICAL TESTING
• MARKING
• GROUP A ACCEPTANCE
• PACKING
• PACKING AND DOCUMENTATION ACCEPTANCE
• SHIPPING

GROUP A ACCEPTANCE
Sub-

A1

Temp.

Parameters

group

°C

Insp.
Level

Visual and Mechanical Inspection,
Major
Minor

*A2

Inoperative failure (electrical and mechanical)

A3

DC parameters
hFE ranges

A4

Hermetic and
molded packages

I

0.25
1

25°C

II

0.15

25°C

II

0

AC parameters at 25° C and
DC parameters at high temperature

Acceptablee quality
level (AQL)

S4

0.65
1

2.5

o Applicable when hFE is guaranteed as min and max
* Definition of electrical inoperative:
-

open or short circuit
80% of guaranteed
200% of guaranteed
> 200% of guaranteed
150% of guaranteed
50% of guaranteed

- <

- >
- >
- <

spec value for: BV CBO , BV CEO , BV CER , BV CES , BV CEV , BV EBO
spec value for: V CElsat)
spec value for: ICBO, ICEs, ICEO' I cEV at 50ro guaranteed BV value
max spec values for hFE
min spec values for hFE

For further information Quality and Reliability see the SGS SURE 3 programme.

33

PRECAUTIONS FOR PHYSICAL HANDLING OF POWER
PLASTIC TRANSISTOR [TO-220, SOT-93, TO-126 (SOT -32)]

When mounting power transistors certain precautions must be taken in operations such as bending of
leads, mounting of heatsink, soldering and removal of flux residue. If these operations are not carried
out correctly, the device can be damaged or reliability compromised.
1.

Bending and cutting leads
The bending or cutting of the leads requires the following precautions:

1.1. When bending the leads they must be clamped tightly between the package and the bending point
to avoid strain on the package (in particular in the area where the leads enter the resin) (fig. 1). This
also applies to cutting. the leads (fig. 2).
1.2. The leads must be bent at a minimum distance of 3 mm from the package (fig. 3a).
1.3. The leads should not be bent at an angle of more than 90° and they must be bent only once
(fig.3b).
1.4. The leads must never be bent laterally (fig. 3c).
1.5. Check that the tool used to cut or form the leads does not damage them or ruin their surface finish.

Fig. 1 - Bending the leads

Fig. 2 - Lead forming or cutting mechanism

w
Plastic
Package

j j

m
t

Lead to~mjng or cutting
mechanIsm

_It -oj
spaced?
A'0039

W
Clamp mechanIsm

Fig. 3 - Angles for lead wire bending

113.0min.

a

c

b

34

2.

Mounting on printed circuit
During mounting operations be careful not to apply stress to the power transistor.

2.1. Adhere strictly to the pin spacing of the transistor to avoid forcing the leads.
2.2. Leave a suitable space between printed circuit and transistor, if necessary use a spacer.
2.3. When fixing the device to the printed circuit do not put mechanical stress on the transistor. For this
purpose the device should be soldered to the printed circuit board after the Transistor has been
fixed to the heatsink and the heatsink to the printed circuit board.
3.

Soldering
In general a transistor should never be exposed to high temperature for any length of time. It is
therefore preferable to use solderi ng methods where the transistor is exposed to the lowest possible temperatures for a short time.

3.1. Tolerable conditions are 260°C for 10 sec or 350°C for 3 sec. The graphs in fig. 4 give an idea of the
excess junction temperature during the soldering process for a TO-220 (Versawatt). It is also important to use suitable fixes for the tin baths to avoid deterioration of the leads or of the package
resin.
3.2. An excess of residual flux between the pins of the transistor or in contact with the resin can reduce
the long--term reliability of the device. The solvent for removing excess flux must be chosen with care.
The use of solvents derived from trichloroethylene is not recommended on plastic packages because
the residue can cause corrosion.

Fig. 4 - Junction temperatures during soldering

S-J630

TJ

5-5631

260·C soldenng bath

TJ

Exposed to air

('C)

(OC)

150

350·C soldering bath

Exposed to air

150

100

~

50

260'C

40 60 60 100

1.5mm,

50

I

Solder

20

100

'

I

140

180

220

50

Time (sec)

35

60

T,me{sec)

4.

Mounting at heatsink
To exploit best the performance of power transistors a heatsink with
that the transistor will dissipate must be used.

Rth

suitable for the power

4.1. The plastic packages used by SGS for its power transistors (SOT -32, SOT -93, Versawatt) provide
for the use of a single screw to fix the package to the heatsink. A compression spring (clip) can be
sufficient as an alternative (fig. 5).
Fig. 5 -- SOT -93 mounting examples

-

0
0 ,
,
"

~~l

-0-

,

,

,~

,'~

The screw should be properly tightened to ensure good contact between the back of the package
and the heatsink but should not be too tight to avoid deformation of the copper part (tab) of the
package causing breaking of the die or separation of the resin from the tab.

4.2. The contact Rth between device and heatsink can be improved by inserting a thin layer of silicone grease with
fluidity sufficient to guarantee perfectly uniform distribution on the surface of the tab. The thermal resistance
with and without silicone grease is given in fig. 6. An
excessively thick layer or an excessive viscosity of the
grease can degrade the Rth .
5.

Fig. 6 - Contact thermal resistance
vs. insulator thickness.

Heatsink problems
The most important aspect from the point of view of
reliability of a power transistor is that the heatsink
should be dimensioned to keep the Tj of the device as
low as possible. From the mechanical point of view,
however, the heatsink must be realized so that it does
not damage the device.
0.05

36

0.10

0.15

Th{mm)

5.1. The planarity of the contact surface between device and heatsink must be
SOT -93, TO-126 (SOT -32).

< 25 Ilm for TO-220,

5.2. If self threading screws are used there must be an outlet for the material that is deformed during
formation of the thread. The diameter 
'~

DATA

Page

WASHER

LOCK

1

NOT AVAILABLE FROM SGS

1

NOT AVAILABLE FROM SGS

2

NOT AVAILABLE FROM SGS

1

NOT AVAILABLE FADM' SG5

WASHER

HEXAGON
NUTS

SOLDER LUG

5-0366/3

Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 0.7 Nm.

41

ACCESSORIES AND MOUNTING INSTRUCTIONS (continued)

TO-220

~ "'''~"
TYPE

.

~~:::~"

SLOTTED

ASSEMBL V NUMBER

MATERIAL

Q.ty

1

NOT AVAILABLE FROM SGS

INSULATING
BUSHING

'~

MICA

1

COA 31558

NYLON

44

1

CDA 3159

MICA

45

INSULATOR

METAL

WASHER

LOCK

1

NOT AVAILABLE FROM SGS

1

NOT AVAILABLE FROM SGS

2

NOT AVAILABLE FROM SGS

WASHER

HEAT SINK

max 2 mm

0="".NUTS

5-038913

Maximum torque (applied to mounting flange)
Recommended: 0.55 Nm
Maximum: 0.7 Nm.

42

MECH.
DATA
Page

CDA 3126A

42
30.1

16.9

'--+-;;04--~

.

---T--~
1.4

CDA 3126B

42
30.1

16.9

43

ACCESSORIES AND MOUNTING INSTRUCTIONS

COA 3154

25

0.05

A_0042

COA 3155
.. C

b

i
I

~
ca==t1
'------1

.QJ~X45~

A - 0024/2
Suffix

A

Package

TO-3

•

b

d

•

1.1 max

1.55101.65

c

6.40106.60 3.00103.10 4.00104.05

B

TO-220

5.30105.50 3.00103.10 3.83103.88 0.60100.65 1.70101.80

C

SOT-93

6.40106.60 3.00103.10 4,00104,05 1.3

Material: Nylon;

Dimensions: mrn.

44

to

1.4

2.7 102.9

(continued)

CDA 3159

R=2

-~

-~

#L

a•

0

.__ X

"

14.8
22

I

0.10

~

"1-40.Q~

A-UU2SI3

CDA 3162

A-0025/3

I-.cc:.;c.=:.:==--_I NOTE

45

ACCESSORIES AND MOUNTING INSTRUCTIONS (continued)

COA 3163

A-0023/3

COA 3164

A-0022/1

MATERIAL: Steel nickel plated

46

DATA SHEETS

47

EPITAXIAL-BASE NPN

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 175, BD 177 and BD 179 are silicon epitaxial-base NPN power transistors in
Jedec TO-126 plastic package intended for use in medium power linear and
switching applications.
The complementart PNP types are the BD 176, BD 178 and BD 180.

ABSOLUTE MAXIMUM RATINGS
COllector-base voltage (I E= 0)
Collector-emitter voltage (I s= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Total power dissipation at T case :<=;25°C
Storage temperature
J unction temperature

SD 175

SO 177

SO 179

45V
45V

60V
60V
5V
3A

80V
80V

7A
30W

-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR:~'

E

Dimensions in mm

MECHANICAL DATA

5/80

48

THERMAL DATA
Rth

j-case

max

Thermal resistance junction-case

4.16 °C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter
ICBO

lEBO

Collector cutoff
current (I E= 0)

Emitter cutoff
current (I c =0)

Test conditions
for 60175
for 60177 '
for 60179

Min. Typ. Max. Unit

V cs=45V
V cs=60V
V cs=SOV

V Es=5V

100
100
100

~

1

mA

~A

~

V CEO (Sus)*Collector-emitter
sustaining voltage

I C =100 mA
for 60175
for 60177
for 60179

V CE (sat) * Collector-emitter
saturation voltage

Ic =1A

I B= 0.1A

O.S

V

V BE *

Base-emitter voltage

Ic =1A

V CE=2V

1.3

V

hFE*

DC current gain

Ic =150mA V CE=2V
V CE=2V
Ic =1A

fT

Transistion frequency Ic =250mA V c~10V

* Pulsed: pulse duration = 300 ~s, duty cycle ~ 1.5%

49

V
V
V

45
60
SO

40
15
3

-

-

MHz

Safe operating areas

DC current gain
G 3727

10'

v

r;::;;

"'j-..

VeE = 2V

1\

o ,
VeE (V

10

10.

J

4

,.

10-'

DC transconductance

4

,.

Ie (AJ

1

Collector-emitter saturation voltage
G 3728

G 3720

VCE(sat)

Ie
(AJ

(V)

1.5

VCE =2V

\

1"
[7

\

Ie =o.5A\lA

0..5

A \3A

\

0..5

I""f..

"'

""'
~
4

0.

10- 3

0..5

50

• 8

10.-'

4

•

8

10- 1

4 • 8
IS (A)

Collector-em itter saturation voltage

Base-emitter saturation voltage
G 3723

G 3722

I

VCE(S'I

veE(s,1 )

,

(V)

1

1

(V)

I

I

!

'/

/

,

V

I
I

./'

I

--I

,

--

8

,

hFE =10

.

.--

....

.-

rt
I

0.5

I

hFE='O

,
2

,

10-'

8

6

6

8

IC (A)

Satured switching characteristics

Power derating chart

G 3724

G 3129

I
(~S)

8

IC(A)

Plol
(W)

8

,
,

28

\

24

,

I"I'\.

I

Vce=lOV
Ie, =-l e2

20

hFE='O

,

,6

6

f;;::--+-........

K

r-

I'\:
I\.

I."

t...........l

,

,

\

,2

........

I

~

If
Ion

,I

8

,

,

6

\.

•

o

IC(A)

51

20

40

60

80

,00

,20 Tca• .c°C)

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SO 176, SO 178 and SO 180 are silicon epitaxial-base PNP power transistors in
Jedec TO-126 plastic package intended for use in medium power linear and
switching applications.
The complementary NPN types are the SO 175, SO 177 and SO 179.

ABSOLUTE MAXIMUM RATINGS

BO 176

-45V
-45V

Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Total power dissipation at T case::5 25°C
Storage temperature
Junction temperature

BO 178

BO 180

-60V
-80V
-60V
-80V
-5V
-3A
-7A
30W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM

,~'
E

MECHANICAL DATA

5/80

Dimensions in mm

52

THERMAL DATA
Rth

j-case

Thermal resistance junction-case

4.16 °C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

Test conditions

leBo

Collector cutoff
current (I E= 0)

for 80176
for 80178
for 80180

lEBO

Emitter cutoff
current (I c =0)

V EIF-5V

Min. Typ. Max. Unit

V cEF-45V
V cEF-60V
V cEF-80V

-100
-100
-100

ItA
ItA
ItA

-1

mA

V CEO (Sus)*Coliector-emitter
sustaining voltage

Ie =-100 mA
for 80176
for 80178
for 80180

VCE (sat) * Collector-emitter
saturation voltage

Ie =-1A

I B =-0.1A

-0.8

V

V BE *

Base-emitter voltage

Ic =-1A

V cr-2V

-1.3

V

hFE*

DC current gain

Ic =-150mA V cr-2V
V CE=-2V
Ic =-1A

fT

Transistion frequency Ic =-250mA V cr-1OV

-45
-60
-80

* Pulsed: pulse duration = 300 ~s, duty cycle ~ 1.5%
53

V
V
V

40
15

--

3

MHz

DC current gain

Safe operating areas

G 3703

G 3730

-Ie

Ie MAX PULSED

(A)

t-+- -I

hFE

*PULSE OPERATION

8

106)Js

Ie MAX CONTINUOUS
DC

I'\.n
~

I

OPERATlON~

2

1

veE .- 2V

1mst\..1

!

"1\1

1\
I"-

"*FOR SINGLE NON
REPETITIVE PULSE
BD 176- BD 178
BD 180

II

10-'

'\j
I

j

n

I

10

8

10

4

8

10-'

58

-Ie (A)

1

Collector-emitter saturation voltage

DC transconductance

-

G 3705

G 3704

-Ie

- veE (sat)

(A)

(V)

VeE'-

1.5

v

\
Ie .-3A

\
0.5

le·- 2A

0.5

\!e·- 1A
le'-O.s

f'....l

V

N....l
II

1I
10- 3

0.5

54

10- 2

10-'

- IB (A)

Collector-emitter saturation voltage

Base-emitter saturation voltage

G-3706

-VCE(sat )

G-3707

-VBE(sat )
(V)

(V)

/

/

,

/

-

J.,..
~

0_5

V

"FE=10

hFE =10

,

o

8

-IC(A)

•

Satured switching characteristics

•

Power derating chart

I !

Plot

8

(W)

6

28

'\

24
2

Vce=-30V
161 = -la2
"FE= 10

10-'

f' I\.

I

I

I
I !

-

I

J

G-3729

I

.I

1'\

12

r\
I\.

tf

8

!

16

i

4

'\

!

ton
6

I

i

ts

~

10-1

20

""'" K

10-"- r- Io-

8

-le(A)

G- 37 08

t
(1'5)

8

10-'

I"\,
6

8

o

-Ie (A)

55

20

40

60

60

100

120 Tcas.(·C)

EPITAXIAL-BASE NPN

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SO 233, SO 235 and SO 237 are silicon epitaxial-base NPN power transistors in
Jedec TO-126 plastic package intended for use in medium power linear and
switching applications.
The complementary PNP types are the SO 234, SO 236 and SO 238 respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO
VCER
V EBO

Ic
ICM

P tot
Tstg
Tj

BD 233

Collector-base voltage (I r;=O)
Collector-emitter voltage (I B= 0)
Collector-emitter voltage (R BE= 1 KO)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current
Total power dissipation at T case ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR

BD 237

60V
100V
60V
80V
60V
100V
5V
2A
6A
25W
-65 to 150 "C
150"C

4

MECHANICAL DATA

5/80

45V
45V
45V

BD 235

Dimensions in mm

56

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

°C/w

5

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Test conditions

Parameter

ICBO

lEBO

Collector cutoff
current (I E= 0)

Em itter cutoff
current (I c =0)

for 80233
for 80235
for 80237
T case= 150°C
for 80233
for 80235
for 80237

I c =100 mA
for 80233
for 80235
for 80237

V CE (sat) * Collector-emitter
saturation voltage

Ic =1A

hFE *

fT

=1A

100
100
100

IlA

V cs=4eV
V cs=60V
V cs=100V

2
2
2

mA
mA
mA

1

mA

45
60
80

V

V CE=2V

1.3

V

OC current gain

Ic =150mA Vc~2V
Ic =1A
Vc~2V

Transistion frequency Ic =250mA V c~10V
I c = 150mA V c~ 2V

57

:0;

V
V
V
0.6

Ic

* Pulsed: pulse duration = 300 I1S. duty cycle

I1A
I1A

I B =0.1A

Base-emitter voltage

hFE1/hFE2*Matched pairs
B0233 1B0234
B02351 B0236
B0237/B0238

Unit

V cs=45V
V cs=60V
V cs=100V

V Es=5V

V CEO (Sus)*Coliector-emitter
sustaining voltage

, VBE*

Min. Typ. Max.

1.5%

40
25

-

-

MHz

3
1.6

-

Safe operating areas

DC current gain

-

G 3718

IC
(A)

,~

IC MAX (PULSED)

i- f+--

IC MAX (CONTINUOUS)

i

G 3719

hFE,

*PULSED OPERATION

1~~

I

VCE = 2V

...... j...

10'

,

-* FOR SINGLE NON
___~R~E~PE~T~IT.~iV~E~P;U;LS~E~____4--4-4~~~

'\.

I\.

------+-H-++++++--l-----"---++f--PH+1
10-1
6

B0233
B0235
B0237

,

~U
10

• •

10

vCE (V)

•10-1

10-'

DC transconductance

4

.•

,

IB(A)

Collector-emitter saturation voltage
G 3720

Ie

6

4

1

G 3721

VCE(sat )
(V)

(A)

1.5

VCE =2V

\
IC=O.SA

II

lA

,

0.5

I'
\..

1\
If

~

o
O.S

,

10-3

58

A

1\

0.5

o

A

6 8

""

~

,

10-'

6 8

,

10-'

8 8
la(A)

Collector-emitter saturation voltage

Base-emitter saturation voltage
G 3723

G- 3722

VeE(Sat

I

VBE(sat )

'I

I!

(V)

(V)

I

i

/

,

V

--

i

+

'---

~-::~t

-

_I

I

~-

,r'---

II

0.5

i

I

.

I

I

I

:
i

f-----

i

i

I

i

-I

!

1 ~ f-----+

a

I

-H,-;-

l _~-+

f-----1

i

i

' II

-I

'I

,hFE - 10

-------

h FE =10

:~tt

~-

I

10-'

I

I

c1---- I-- i-

!

6

1

~

1

8

Ie (A)

Satured switching characteristics

Power derating chart

G 3724

G 3725

t
(flS)

Ptot

B

(W)

1-1- 1-\
,i-,

i

,
~

~
10-1

i

T
I

1'\

1'\

l'\.

r'\

"'"

I;"

I

20

Vee=30V
lSI =-I S2
hFE=10

['..

tf

10

,

1'\

1'\
I'\.
I'\.

l'\.

1'\

ton
!

I
a

59

50

100

['\,

I

EPITAXIAL-BASE PNP

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SO 234, SO 236 and SO 238 are silicon epitaxial-base PNP power transistors in
Jedec TO-126 plastic-package intended for use in medium power linear and
switching applications.
The complementary NPN types are the SO 233, SO 235 and SO 237 respectively.

80234

ABSOLUTE MAXIMUM RATINGS
V cso
V CEO
V CER
V ESO

'c

I CM

Ptot
Tstg
Tj

Collector-base voltage (I E= 0)
Collector-emitter voltage (I s= 0)
Collector-emitter voltage (R SE= 1 KO)
Em itter -base voltage (I C= 0)
Collector current
Collector peak current
Total power dissipation at T case ::;25°C
Storage temperature
J unction temperature

INTERNAL SCHEMATIC DIAGR:

:
4

MECHANICAL DATA

5/80

-45V
-45V
-45V

80236

B0238

-60V
-100V
-60V
-80V
-60V
-100V
-5V
-2A
-6A
25W
-65 to 150°C
150°C

Dimensions in mm

60

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

5

°C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

leBo

lEBO

Collector cutoff
current (I E= 0)

Emitter cutoff
current (I C =0)

Test conditions

for 80234
for 80236
for 80238
T case= 150°C
for 80234
for 80236
for 80238

Min. Typ. Max.

Unit

V cs=-45V
V es=-60V
V eS= -1 OOV

-100
-100
-100

/lA

Ves=-45V
V es=-60V
V cS= -1 OOV

-2
-2
-2

mA
mA
mA

-1

mA

V EB=-5V

=-100 mA
80234
80236
80238

/lA

/lA

V CEO (Sus)"'Coliector-emitter
sustaining voltage
(lB=O)

Ic
for
for
for

V CE (sat) '" Collector -em itter
saturation voltage

I C =-1A

I s=-0.1A

-0.6

V

V BE *

Base-emitter voltage

Ic =-1A

V cE=-2V

-1.3

V

hFE *

DC current gain

Ic = -150mA V cF -2V
Ic =-1A
V cF-2V

fT

Transistion frequency Ic =-250mA V cF-10V

hFE1 / h FE; Matched pairs
BD233/BD234
BD235/BD236
BD237/BD238

-45
-60
-80

Ic =150mA V CE=2V

'" Pulsed: pulse duration = 300 /ls. duty cycle ~ 1.5%
61

V
V
V

40
25

-

-

MHz

3
1.6

-

Safe operating areas

DC current gain

-Ie

8

IC MAX (PULSED)

(A)

,

f-

f--

* PULSED

DC

hFE

OPERATTONe

1~

rirITI-~'f\

-

i

~

'

T-

I

I, "-Nl~
II ,II : i I II

,
10

4

10

Iii

,

t4

"

-VCE (V)

I
,

,

10-'

DC transconductance

!

I

:!

i
B0234
B0236
B0238

i

I II

j

,
I

~

~

,

1

1 II

-J]

I

I I

i
10-1

-++
I I
VCE ;- 2V

~

'- * ~~M:~,~~E ~SLNSE

1

,

,\. 1001'
\O}J

n

IC MAX (CONTINUOUS)
1

G 3103

370~

G

,

I:

II
4

I
"

I

1II1
-IC (A)

1

Collector-emitter saturation voltage
G 3704

-IC

G 3705

- VCE(s.at )

I

(A)

(V)

VCE;- V

1.5

1
IC; -3A

~

f1

t'IC ;-2A

0.5

I\Ic; lA

IC;-0.5~

11"'-1 II
n I TI

o
o

10- 3

0.5

62

10- 2

10- 1

-I B (A)

Collector-emitter saturation voltage

Base-emitter saturation voltage
G- 3707

G 3106

-VCE(sal )
(V)

/

/

,

1

/~V"---+--1C-++--Y---H

1---- - +-+-+-++-++++1-

I

"""'--f-- --I-

-

t---j.....-

10-1

--1--

8

~

0.5

1-----l--l-H--l--I-+-W-h-FE-=-10+---j---j--l-+l-1-H

hFE =10

I----+--I--f---+-+--H-f-I-------+--+_

+-

10-'
6

6

8

10-'

Satured switching characteristics

Power derating chart

G 3108

I
(~s)

8

-Ie (A)

G 3109

P tot

B

(W)

C

,

1
I

,

1

l-I--

I

!
VCC =-30V
161 =-162
"FE= 10

20

" I\:
1"\

I

B
6

,

..........

-..... t-

-

+-

I

Is

10

i'-..

1"\

I\.

If

"

Ion

I'\.

10-1

o

63

100

150 Teas. ("C)

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 239, BO 239A, BO 239B and BO 239C are silicon epitaxial-base NPN
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary PNP types are BO 240, BO 240A, BO 240B and BO 240C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCER

VCEO
VESO
Ic
ICM

Is

Ptot

B0239 B0239A B0239B B0239C

Collector-emitter voltage (RSE = 100D)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;25°C
Tamb :::; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

70V
60V

90V
BOV

115V
100V

5V
2A
4A
0.6A
30W
2W
-65 to 150°C
150°C

4

MECHANICAL DATA

Dimensions in mm

. ¢~lIe!=to~ conoect.ed to tab.

5/80

55V
45V

64

THERMAL DATA
Thermal resistance junction-case
Thermal resistance junction-ambient

Rlh j-ease
Rlh j-amb

ELECTRICAL CHARACTERISTICS (Tease
Parameter
Collector cutoff
current (IB = 0)

ICEO

for
for
for
for

BD
BD
BD
BD

lEBO

Emitter cutoff
current (Ic = 0)

V EB

= 5V

VCE (sal)

,

V BE (on)'
hFE
hie

,

239
239A
239B
239C

°C/W
°C/W

Min. Typ. Max. Unit

for BD 239 and BD 239A
VCE = 30V
for BD 239B and BD 239C
VCE = 60V

Collector cutoff
current (VBE = 0)

4.17
62.5

= 25°C unless otherwise specified)

Test conditions

ICES

VCEO (Sus)'Collector-emitter
sustaining voltage
(lB = 0)

max
max

VCE
VCE
VCE
VCE

= 45V
= 60V
= 80V
= 100V

Ic = 30mA
for BD 239
for BD 239A
for BD 239B
for BD 239C

0.3

rnA

0.3

rnA

0.2
0.2
0.2
0.2

rnA
rnA
rnA
rnA

1

rnA

V
V
V
V

45
60
80
100

Collector-emitter
saturation voltage

Ic

= 1A

IB

= 0.2A

0.7

V

Base-emitter
voltage

Ic

= 1A

VCE

= 4V

1.3

V

DC current gain

Ic
Ic

= 0.2A
= 1A

VCE
VCE

= 4V
= 4V

Small signal
current gain

Ic = 0.2A
f = 1KHz
Ic = 0.2A
f = 1 MHz

VCE

= 10V

VCE

= 10V

'Pulsed: pulse duration = 300fLs, duty cycle ::;:;2%.
65

40
15

-

20

-

3

-

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 240, BD 240A, BD 240B and BD 240C are silicon epitaxial-base PNP power transistors in Jedec TO-220 plastic package, intended for use in medium power linear and
switching applications.
The complementary NPN types are BD 239, BD 239A, BD 239B and BD 239C respectively.

ABSOLUTE MAXIMUM RATINGS
VCER

V CEO

VEBO
Ic
ICM

IB

Ptot

BO 240 BO 240A BO 240B BO 240C

Collector-emitter voltage (R BE = lOOn)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base cu rrent
Total power dissipation at Tease < 25°C
Tamb <25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-70V
-90V
-60V
-80V
-5V
-2A
-4A

--115V
-100V

-O.6A

30W
2W
-65 to 150°C
150°C

DIAGR~~:

MECHANICAL DATA

10/82

-55V
-45V

Dimensions in mm

66

THERMAL DATA
Rth j-case
Rth j-amb

max.
max.

Thermal resistance junction-case
Thermal resistance junction-ambient

4.17
62.5

°C!W
°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter
I CEO

Collector cutoff
cu rrent (I B = 0)

Test conditions

Min. Typ. Max. Unit

for B0240 and B0240A
VCE = -30V
for B0240B and B0240C
VCE = -60V

B0240
B0240A
B0240B
B0240C

ICES

Collector cutoff
current (V BE = 0)

for
for
for
for

lEBO

Emitter cutoff
current (lc = 0)

V EB

VCE
VCE
VCE
VCE

= -45V
= -60V
= -80V
= -100V

= -5V

V CEo(susi Collector-emitter
sustaining voltage
(I B = 0)

Ic = -30mA
for B0240
for B0240A
for B0240B
for B0240C

VCE(sat) * Collector-emitter
saturation voltage

Ic

= -1A

IB

VBE(On) * Base-emitter
voltage

Ic

= -1A

VCE

hFE*

DC current gain

Ic == -0.2A
Ic == -1A

VCE = -4V
VCE==-4V

hfe

Small signal current
gain

Ic == ··0.2A
f == 1 KHz
Ic == -0.2A
f = 1 MHz

VCE

mA

-0.3

mA

-0.2
-0.2
-0.2
-0.2

mA
mA
mA
mA

-1

mA

-45
-60
-80
-100

V
V
V
V

= -0.2A

-0.7

V

= -4V

-1.3

V

40
15

-

20

-

3

-

= -10V

VCE == -10V

* Pulsed: pulse duration = 300 MS, duty cycle ~ 2% .

67

-0.3

G-4774

Safe operating areas

IC

t =100/-15

(A)

t=lm5---t

.......

11

,

\
::lo.

t=5m5

t=100m5~

'

......

\

\

~~
'\

\.

1\
80240
80240 A
802408
B0240 C

10

VCE (V)

DC current gain

Collector cutoff current
G 4777

-

I

10'

I

T=150·C

f--

I

T=100·C

I

10-'

T=25"C

I

1-+-++++tH----+-+t-H+Il+------ --- 10-3
-0.5 -0.4 -Cl.3 -0.2 -0.1

0

0.1

0.2

0.3

10-'

YBE(V)

68

, 6'

,

10-'

6

,

IC (A)

Input and output capacitance

Base-emitter voltage
G_4776

I

0_4

10

..

I ,ill!

, ,

0.2 -

.

10-2

10

G- "775

"I

( V)

I

le=4A

0.8

le=3A

0.6
0.4

r-

0.2

I'..
e=

o
10

IA

10'

r-r'-+,!+t+tt-f-+t-ttit-lt--+-t+-ttHtt---+-HtttHl

, II

Collector-emitter saturation voltage
"c.E(sat)

-+- - H.tttH---hI-tHt1~-++t-tttltt--+-+-++Hft1I
Hf-++++++ttI--+++-t+t-ltl---++ttHttl

- ' ,. ;~
j'Lt.

I~= 1A

I III
I III
10'

Ie (mA)

69

10-'

.10

EPITAXIAL-BASE NPN

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The SD 241, SD 241A, SD 241S and SD 241C are silicon epitaxial-base NPN
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary PNP types are the SD 242, SD 242A, SD 242B and BD 242C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCER
VCEO
VEBO

Ic
ICM

IB
Ptot
Tstg

Tj

B0241 B0241AB0241BB0241C

Collector-emitter voltage (RSE = 1000)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base-current
Total power dissipation at Tease ,,;25 D C
T amb ,,; 25 DC
Storage temperature
Junction temperature

55V
45V

70V
60V

90V
80V

115V
100V

5V
3A
5A
1A
40W
2W
-65 to 150 D C
150 D C

INTERNAL SCHEMATIC DlAGR~~'

E

MECHANICAL DATA

5/80

70

Dimensions in mm

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max 3.13 °C/W
max 62.5 °C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICEO

Collector cutoff
current (Is = 0)

Test conditions

Min. Typ. Max. Unit

for BD 241 and BD 241A
VCE = 30V
for BD 241B and BD 241C
VCE = 60V

BD
BD
BD
BD

241
241A
241B
241C

ICES

Collector cutoff
current (VSE = 0)

for
for
for
for

IESO

Emitter cutoff
current (Ic = 0)

VES = 5V

VCE
VCE
VCE
VCE

=
=
=
=

45V
60V
BOV
100V

0.3

rnA

0.3

rnA

0.2
0.2
0.2
0.2

rnA
rnA
rnA
rnA

1

rnA

V CEO (SUS)* Collector-em itter
sustaining voltage
(Is = 0)

Ic = 30mA
for BD 241
for BD 241A
for BD 241B
for BD 241C

VCE(sat) * Collector-emitter
saturation voltage

Ic = 3A

Is = 0.6A

1.2

V

VSE(on) *

Base-emitter
voltage

Ic = 3A

VCE = 4V

1.B

V

hFE *

DC current gain

Ic = 1A
Ic = 3A

VCE = 4V
VCE = 4V

hIe

Small signal
current gain

Ic = 0.5A
f = 1KHz
Ic = 0.5A
f = 1 MHz

VCE = 10V

25
10

-

20

-

3

-

VCE = 10V

* Pulsed: pulse duration = 300jLs, duty cycle "';;2%.
71

V
V
V
V

45
60
BO
100

EPITAXIAL-BASE PNP

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 242, BO 242A, BO 242B and BO 242C are silicon epitaxial-base PNP
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary NPN types are the BO 241, BO 241A, BO 241 Band BO 241 C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCER
VCEO
EBO

V
Ic

ICM

Is

Ptot

B0242 B0242A B0242B B0242C

Collector-emitter voltage (RSE = 100D) -55V
Collector-emitter voltage (Is = 0)
-45V
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base-cu rrent
Total power dissipation at Tease :::;25°C
Tamb :::;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-70V
-90V
-60V
-80V
-5V

-115V
-100V

-3A
-5A
-1A
40W
2W
-65 to 150°C
150°C

DIAGR~:~:

MECHANICAL DATA

Dimensions in mm

Co/lec.tor connected to tab.

···T0420

5/80

72

THERMAL DATA
Rth

Thermal resistance junction-case
Thermal resistance junction-ambient

j-ease

Rth j-amb

ELECTRICAL CHARACTERISTICS (Tease
Parameter

ICEO

Collector cutoff
current (IB = 0)

for
for
for
for

BO
BO
BO
BO

lEBO

Emitter cutoff
current (Ic = 0)

VEB

= -5V

.

242
242A
242B
242C

VCE
VCE
VCE
VCE

= -45V
= -60V
= -SOV
= -100V

Ic = -30mA
for BO 242
for BO 242A
for BO 242B
for BO 242C

-0.3

mA

-0.3

mA

-0.2
-0.2
-0.2
-0.2

mA
mA
mA
mA

-1

mA

-45
-60
-SO
-100

V
V
V
V

= -0.6A

-1.2

V

VCE

= -4V

-1.S

V

= -1A
= -3A

VCE
VCE

= -4V
= -4V

Ic = -O.5A
f = 1KHz
Ic = -O.5A
f = 1MHz

VCE

= -10V

VCE

= -10V

Collector-emitter
saturation voltage

Ic

= -3A

IB

VBE *

Base-emitter
voltage

Ic

= -3A

hFE *

DC current gain

Ic
Ic

hie

Small signal
current gain

VCE (sat)

°C/W
°C/W

Min. Typ. Max. Unit

for BO 242 and BO 242A
VCE = -30V
for BO 242B and BO 242C
VCE = -60V

Collector cutoff
current (VBE = 0)

3.13
62.5

25°C unless otherwise specified)

Test conditions

ICES

VCEO (SUS)· Collector-em itter
sustaining voltage
(lB = 0)

=

max
max

• Pulsed: pulse duration = 300JLs, duty cycle

73

~2%.

25
10

-

20

-

3

-

-

EPITAXIAL-BASE NPN

POWER LINEAR AND SWITCHING APPLICATIONS
The BO 243, BO 243A, BO 243B and BO 243C are silicon epitaxial-base NPN
power transistors in Jedec TO-220 plastic package, intended for use in medium
power linear and switching applications.
The complementary PNP types are the BO 244, BO 244A, BO 244B and BO 244C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
V EBO
Ic
ICM

IB
Ptot
Tst9

Tj

B0243 B0243A B0243B B0243C

Collector-base voltage (IE =0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

45V
45V

,
4

60V
60V

80V
80V

100V
100V

5V
6A
10A
2A
65W
-65 to 150°C
150°C

E

MECHAN ICAl OAT A

5/80

Dimensions in mm

74

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICEO

Collector cutoff
current (Is = 0)

max
max

Min. Typ. Max. Unit

for BO 243 and BO 243A
VCE = 30V
for BO 243B and BO 243C
VCE = 60V

BO
BO
BO
BO

243
VCE = 45V
243A VCE = 60V
243B VCE = 80V
243C VCE = 100V

Collector cutoff
current (VSE = 0)

for
for
for
for

IESO

Emitter cutoff
current (Ic = 0)

V ES = 5V

VCEO (sus) *Collector-emitter
sustaining voltage
(Is = 0)

Ic = 30rnA
for BO 243
for BO 243A
for BO 243B
for BO 243C

VCE (sat) * Collector-emitter
saturation voltage

Ic = 6A

Is = 1A

V SE *

Base-emitter
voltage

Ic = 6A

VCE = 4V

hFE *

DC current gain

Ic = 0.3A
Ic = 3A

VCE = 4V
VCE = 4V

hIe

Small signal
current gain

Ic = 0.5A
f = 1KHz
Ic = 0.50
f = 1 MHz

VCE = 10V

0.7

rnA

0.7

rnA

0.4
0.4
0.4
0.4

rnA
rnA
rnA
rnA

1

rnA

45
60
80
100

V
V
V
V
1.5

V

2

V

30
15

-

20

-

3

-

VCE = 10V

* Pulsed: pulse duration = 300ILS, duty cycle .:;;2%.
75

°C/W
°C/W

= 25°C unless otherwise specified)

Test conditions

ICES

1.92
62.5

EPITAXIAL-BASE PNP

POWER LINEAR AND SWITCHING APPLICATIONS
The 80244, 80 244A, 802448 and 80 244C are silicon epitaxial-base PNP
power transistors in Jedec TO-220 plastic package intended for use in medium
power linear and switching applications.
The complementary NPN types are the 80243, 80 243A, 802438 and 80 243C
respectively.

ABSOLUTE MAXIMUM RATINGS

B0244 B0244A B0244B B0244C

VCBO

-45V
-45V

VCEO
V EBO
Ic
ICM

IB

P tot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
8ase current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature

-60V
-80V
-60V
-80V
-5V
-6A
-10A
-2A
65W
-65 to 150°C
150°C

-100V
- 1OOV

INTERNAL SCHEMATIC DIAGR~4

MECHANICAL DATA

5/80

Dimensions in mm

76

THERMAL DATA
Rth j-ease
Rth j-amb.

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

ICEO

Collector cutoff
current (Is = 0)

=

max
max

Min. Typ. Max. Unit

for BO 244 and BO 244A
VCE = -30V
for BO 244B and BO 244C
VCE = -60V
244
VCE = -45V
244A VCE = -60V
244B VCE = -80V
244C VCE = -100V

Collector cutoff
current (VSE = 0)

for
for
for
for

IESO

Emitter cutoff
current (Ic = 0)

V ES = -5V

BO
BO
BO
BO

VCEO (Sus)*Coliector-emitter
sustaining voltage
(Is = 0)

Ic = -30mA
for BO 244
for BO 244A
for BO 244B
for BO 244C

VCE (sat) * Collector-em itter
saturation voltage

Ic = -6A

Is = -1A

VSE *

Base-emitter
voltage

Ic = -6A

VCE = -4V

hFE *

DC current gain

Ic = -0.3A
Ic = -3A

VCE = -4V
VCE = -4V

hie

Small signal
current gain

Ic = -0.5A
f = 1KHz
Ic = -0.5A
f = 1 MHz

VCE = -10V

-0.7

mA

-0.7

mA

-0.4
-0.4
-0.4
-0.4

mA
mA
mA
mA

-1

mA

-45
-60
-80
-100

30
15
20

VCE = -10V

* Pulsed: pulse duration = 300jLs, duty cycle,,; 2%
77

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

ICES

1.92
62.5

3

V
V
V
V
-1.5

V

-2

V

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 433, BD 435 and BD 437 are silicon epitaxial-base NPN power transistors in
Jedec TO-126 plastic package, intended for use in medium power linear and switching
applications.
The BD '433 is especially suitable for use in car-radio output stages,
The complementary PNP types are the BD 434, BD 436 and BD 438 respectively,

ABSOLUTE MAXIMUM RATINGS
Vcso

VCES
V CEO

VESO
Ic
ICM

Is

Ptot
T stg
Tj

BO 433BO 435

Collector-base voltage (IE = 0)
Collector-emitter voltage (VSE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (t ,,;; 10ms)
Base current
Total power dissipation at Tcase";;25°C
Storage temperature
Junction temperature

22V
22V
22V

BO 437

32V
45V
32V
45V
32V
45V
5V
4A
7A
lA
36W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

10/82

Dimensions in mm

78

THERMAL DATA
Rth j-case
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (T case
Parameter

max
max

3.5
100

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

IcBO

Collector cutoff
current (IE = 0)

for 80433
for 80435
for 80437

V CB = 22V
V CB = 32V
V CB = 45V

100
100
100

I-\A
I-\A
I-\A

ICES

Collector cutoff
current (V BE = 0)

for 80433
for 80435
for 30437

VCE = 22V
VCE = 32V
VCE = 45V

100
100
100

I-\A
I-\A
I-\A

lEBO

Emitter cutoff
current (lc = 0)

V EB = 5V

V CEO (sus)' Collector-emitter
sustaining voltage
(lB = 0)

Ie

Collector-emitter
saturation voltage

Ie

Base-emitter voltage

Ie
Ie

VCE (sat)'

V BE

hFE

,

,

DC current gain

Ie
Ic

fT

Transition frequency

, Pulsed: pulse duration

mA

= 100mA

for 80433
for 80435
for 80437

Ic

hFE/ hFE2 'Matched pair

1

= 2A

= 10 mA
= 2A

IB
for
for
for

= 0.2A
80433
80435
80437

0.2
0.2
0.2

V eE = 5V
V eE = 1V
for 80433
for 80435
for 80437

V CE = 5V
for 80433
for 80435
for 80437
= 500mA VCE = 1V
= 2A
VeE = 1V
for 80433
for 80435
for 80437

V
V
V

22
32
45
0.5
0.5
0.6

0.58

V
1.1
1.1
1.2

= 10 mA

Ie

= 500mA V CE = 1V

Ie

= 250mA V CE = 1V

300 f1s, duty cycle

79

1.5%

40
40
30
85

V
V
V

-

130
130
130
140

-

-

50
50
40

-

1.4
3

V
V
V

MHz

DC current gain

Safe operating areas
Ie
(A)
10

G-24 6

n

G 486511

I

II

_~~lll'ERJJIC

Ie MAX PULSED
Ie MAX CONTINUOUS

I

veE =1 2V

*10,"s

De OPERATIONili

lm~!1

~

lOms

'\

--

--- I--

~ \+

* ~~~i~~T~VLEE P~~~E

I-

S

"

~

I

\
I

,
B0437-

1\

1

I-

B0435= H

NI

!

B0433~

10-'

e 10 1

-2

10

10

DC transconductance

4

2

II

4

6'

6

,

Ie (A)

I

Collector-emitter saturation voltage

•

G-24 0

Ie
(A)

G

VCE(sat )
(V)

VCE=IV

3C mA

IA

3A

.

-

I

870

4J

4

\
\

0.5

0.1

V
o

0.5

1.5

"

-

10

80

\

"

I'

!--

~

IBlmA)

Transition frequency

Collector-base capacitance
G-'B71

G-2423

IT

CCBO

(MHz)

(p F)

VCE=1V

I--'

f..,..
L

"-

10

I,

"-

"'1"\

10

,

I
I

i

I
I 1I1I

II

'

I

I

i

I!

\
I
~~

1

I

i'-

I
I

o

.

8

10

1

IC (A)

Saturated switching characteristics

II

I

10

Power rating chart
G 2415

G-2422

t

~

Ptot

(I-'s) 8

(W)

VCC=30V

6

1161=-162
I hFE=10
36

,

f': t-,....
t-...

ts

~

"

1'\

24

1'\

1"-

t--....
12

1\.

/Y'

!'....
ton

'\
10- 1

6

~!

8

o

IC(Al

81

50

100

I

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 434, BO 436 and BO 438 are silicon epitaxial-base PNP power transistors in Jedec
TO-126 plastic package, intended for use in medium power linear and switching applications.
The BO 434 is especially suitable for use in car-radio output stages.
The complementary NPN types are the BO 433, BO 435 and BO 437 respectively.

ABSOLUTE MAXIMUM RATINGS

BO 434

Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (t .;;; 10ms)
Base current
Total power dissipation at Tease';;; 25·C
Storage temperature
Junction temperature

-22V
-22V
-22V

BO 436

BO 438

-45V
-32V
-45V
-32V
-45V
-32V
-5V
-4A
-7A
-1A
36W
-65 to 150·C
150·C

INTERNAL SCHEMATIC DIAG~~

MECHANICAL DATA

10/82

Oimensions in mm

82

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

3.S
100

°C/W
°C/W

2SoC unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

Icso

Collector cutoff
current (IE = 0).

for 80434
for 80436
for 80438

Vcs= -22V
Vcs= -32V
Vcs= -4SV

-100
-100
-100

I1A
I1A
I1A

ICES

Collector cutoff
current (VSE = 0)

for 80434
for 80436
for 80438

V CE = -22V
V CE = -32V
V CE = -4SV

-100
-100
-100

I1A
I1A
I1A

IESO

Emitter cutoff
current (lc = 0)

V ES = -SV

-1

mA

V CEO (sust Collector-emitter
sustaining voltage
(Is = 0)

Ic

= -1 OOmA for 80434
for 80436
for 80438

VCE (sat) *

Collector-emitter
saturation voltage

Ic

= -2A

V SE *

Base-emitter voltage

Ic
Ic

hFE *

DC current gain

Ic

Ic
Ic

hFE/hFE2*Matched pair
fT

Transition frequency

* Pulsed: pulse duration

Is
for
for
for

-22
-32
-4S

= -0.2A
80434
80436
80438

-0.2 -O.S
-0.2 -O.S
-0.2 -0.6
-0.S8

= -1 0 mA V CE = -SV
= -2 A
VCE = -1 V
for 80434
for 80436
for 80438
= -10mA V CE = -SV
for 80434
for 80436
for 80438
= -SOOmA V CE = -1 V
= -2 A
VCE = -1V
for 80434
for 80436
for 80438

Ic

= -SOOmA V cE =-1V

Ic

= -2S0mA V CE = -1V

300 fis, duty cycle
83

1.S%

V
V
V

V
-1.1
-1.1
-1.2

40
40
30
8S

V
V
V

-

140
140
140
140

-

-

SO
SO
40

-

1.4
3

V
V
V

MHz

Safe operating areas

DC current gain
G 246 7

-IC

I

(AI

10

I

.~t

IC MAX PULSED
IC MAX CONTINUOUS
DC OPERATION
•

++r

u'tK'

.,"

~~~ES;~~VLEE P~~~E

\\
'\

,

.

---

2

lDl's
1
s

VC=2V
~

~

lmsll

~

lOms

""- ,~
10

~

9D438- f-9D436- I--<
9D434~

to-I
10.2

10

.

, 6'

4

10-1

6'

IC(AI

Collector-emitter saturation
voltage
VCE{sat ) ,-'-'-rrn-m--'-'TlTrT1T--r-rTGT·4T'n"~

DC transconductance
G 243 9

-IC
(AI

(V)

VCE--1V

=1

'e 3A I

1.5

I

I
0.5

1/

o

0.5

o
10

1.5

84

10 2

'B(mA)

Transition frequency

Collector-base capacitance

-

-

IT
(MHz)

G 4683

CCBO
(pF )

V,,~-1V

6

15

......

I\.

"" ,

10

..........

1

I'\.
I

:i

10

o

,

6

10-'

10-'

Saturated switching characteristics

, 6'

•

I

II
4

10

Power rating chart

-

G 2415

G-2419

I

68

-VCB(V)

Plot

(,us) 8

(W)

6

Vee=-30V
IB1=-IB2
h FE=10

36

I\.

2

I--

24

Is

.....:

,...,.

I"

.........

I'

""" t....

12

t---.!.!..

I"1\

"I"

Ion
6

8

6

8

o

-Ie (A)

85

50

100

150 Tcase("C)

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 439 and BD 441 are silicon epitaxial-base NPN power transistors in Jedec TO-126
plastic package, intended for use in power linear and switching applications.
The complementary PNP types are the BD 440 and BD 442 respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCES
VCEO
V EBO

Ie
ICM

IB

Ptot
Tstg

Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (t .;;; 10ms)
Base current
..
Total power dissipation at Tcase:';;;25°C
Storage temperature
Junction temperature

BO 439

BO 441

60V
60V
60V

80V
80V
80V

5V
4A
7A
1A
36W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR:~:

MECHANICAL DATA

10/82

Dimensions in mm

86

THERMAL DATA
Rth j-case
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

3.5
100

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

Collector cutoff
current (IE = 0)

for B0439
for B0441

V CB = 60V
V CB = 80V

100
100

f1A

ICES

Collector cutoff
current (V BE = 0)

for B0439
for B0441

V CE = 60V
VCE = 80V

100
100

flA
flA

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 5V

1

mA

ICBO

V CEO (sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic= 100mA

for BO 439
for BO 441

VCE(sat) *

Collector-emitter
saturation voltage

Ic= 2A

IB= 0.2A

V BE *

Base-emitter voltage

Ic= 10 mA
Ic= 2 A

V CE = 5V
V CE = 1V

Ic= 10 mA

V CE = 5V
for BO 439
for BO 441
V CE = 1V
for BO 439
for BO 441
VCE = 1V
for BO 439
for BO 441

hFE *

DC current gain

Ic= 500mA
Ic= 2 A

hFE1 IhFE2 *Matched pair
fT

Transition frequency

* Pulsed: pulse duration

Ic= 500mA

V CE = 1V

Ic= 250mA

VCE = 1V

300 fls, duty cycle

87

1.5%

60
80

flA

V
V
0.8

V

1.5

V
V

0.58

20
15

130
130

-

40
40

140
140

-

-

-

25
15
1.4
3

MHz

Safe operating areas

DC current gain
G-24 5

IC
(A)
10

I

IC MAX PULSED

"" Jpt

Ie MAX CONTINUDU

"'"

DC OPERATION

G 4865

I

I

++t "\:

*FOR SINGLE NON
REPETITIVE PULSE

I

*

VCE=2V
1,..5-I -

~

IDqus
10'

~"

Ims

\.
10ms

\

B0441
B0439
10

10

4

6

'16 1

2

4

6

B

IC (mA)

-

G 4870

VCE(sat )
(V)

(A)

~I

1

G-2440

IC

:i

4

6·'

Collector-emitter saturation
voltage

DC transconductance

I'

VCE=lV

I
:l(JmA

1A

3A

4A

4

\

\
\

0.5

0.1

o

0.5

1.5

-

10

88

\
....

...

(B(mA)

Transition frequency

Collector-base capacitance
G-2

G to 871

3

'T
(MHz)

.-

-

CCBO
(pF)

VCE=1V

.....

"-

10

1

"'-

I

"'\.

10

2

\

r-...

, I!

-

o

10

4

•

Saturated switching characteristics

II

,

,

1

IC (A)

4

10

Power rating chart

-

G- 2415

G 2422

I
(fl S )'

6'

VCB (V)

Piol
(W)

VCC=30V
IIB1=-IB2
hFE=10

36

,

"

1-1'-r-... Is

"

24

\

I'\.

-.!.!. .......

I"'\.

"

12

",

.,/

"\

Ion

'\.
6

,

6

•

o

Ie (A)

89

50

100

150

Tcase("C)

EPITAXIAL·BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BO 440 and BO 442 are silicon epitaxial-base PNP power transistors in Jedec TO-126
plastic package intended for use in power linear and switching applications.
The complementary NPN types are the B0439 and B0441 respectively.

ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (t ,;;:; 10ms)
Base current
Total power dissipation at Tcase';;:;25°C
Storage temperature
Junction temperature

V CBO
V CES
VCEO

V EBO
Ic
ICM

IB

P tot
Tstg
Tj

INTERNAL SCHEMATIC

SO 440

SO 442

-60V
-60V
-60V

-80V
-80V
-80V

-5V
-4A
-7A
-1 A
36W
-65 to 150°C
150°C

DIAGR~4:

MECHANICAL DATA

Dimensions in mm

7.8"'"'
N

M

...

o

M

0.9ma,

1.2

0.58_

4.4

"""

(0 Within this tegion the<:rOSS~SE'ctjQn of th~ I~tls is unco,ntrol1ed

10/82

12

90

TO~126 (SOT-321

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

Test conditions

for B0440
for BD442

Vcs= -60V
Vcs= -80V

ICES

Collector cutoff
current (VSE = 0)

for B0440
for B0442

VCE = -60V
V CE = -80V

IESO

Emitter cutoff
current (Ic = 0)

V ES = -5V

V CEO (sust Collector-emitter
sustaining voltage
(Is = 0)

Ic

= -100mA

VCE (sat) *

Collector-emitter
saturation voltage

Ic

= -2A

V SE *

Base-emitter voltage

Ic
Ic

= -10mA V CE = -5V
= -2 A
VCE = -1V

Ic

= -10mA VCE = -5V
for BO 440
for BO 442
= -500mA V CE = -1 V
for BO 440
for BO 442
= -2 A
V CE = -1V
for BO 440
for BO 442

hFE *

DC current gain

Ic
Ic

h FEt IhFE2 *Matched pair
fT

Transition frequency

* Pulsed: pulse duration

for BO 440
for BO 442
Is

= -500mA V CE = -1V

Ic

= -250mA V CE = -1V

91

Min. Typ. Max. Unit

--100

1.5%

-100

!-LA
!-LA

-100
-100

!-LA
!-LA

-1

mA

-60
-80

V
V

= -0.2A

Ic

300 !-Ls, duty cycle

°C/W
°C/W

25°C unless otherwise specified)

Collector cutoff
current (IE = 0)

Icso

3.5
100

-0.8

V

-1.5

V
V

-0.58

20
15

140
140

-

40
40

140
140

-

25
15
1.4
3

MHz

Safe operating areas

DC current gain
G-4861

G 2456

-IC

J

(A)

10

I

I

IC MAX PULSED

LSE JP<.RA

IC MAX CONTINUOU

"'"

DC OPERATIOJffi
*FOR SINGLE NON
REPETI T1VE PULSE

I

N*
II-'s-

-

'vC=2V

10'

'" ~

8

E-=F
_.

lOOps

\ ..

Ims

.........

f',

I

10
lOms
60442
BD440
I

,

8

10-2

10

,

Collector-emitter saturation
voltage

DC transconductance
G-2439

-IC
(A)

G B

G

B

10-1

G 4662

VCE(Sat )

J

(V)

=I~

=

VCE= IV

Ie 3A I

4
I.S

II
\
0.5

!
i--

V

o

O.S

1

o
10

I.S

92

10'

IS(mA)

Transition frequency

Collector-base capacitance
G 4683

IT
)

(MHz)

Vr.=-W

I'.
15

rr--......
1

I"\"

"'"'

10

1

~

I

"

!
':1

1

I

i

: 1[

I , I

I I

I

10- 1

Saturated switching characteristics
t
(1-'5)

.,..

I

I'\.

10

.

I

G 2415

Ptot
(W)

6

VeC=-30V
IB1=-IB2

36

h F E=10

I\.

2

I--

24

Is

.......

"'"

1'\
........

.......

1,\
I\.

12

~

r-....

Ion

1,\
6

•

6

I1II

10

G-2.t.19

f':

I

Power rating chart

•

~

I

i

•

o

-Ie (A)

93

50

100

EPITAXIAL-BASE NPN
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 533, BD 535 and BD 537 are silicon epitaxial-base NPN power transistors in
Jedec TO-220 plastic package, intended for use in medium power linear and switching
applications.
The complementary PNP types are the BD 534, BD 536 and BD 538 respectively.

ABSOLUTE MAXIMUM RATINGS

BD 533

Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector and emitter current
Base current
Total power dissipation at Tcase";;;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

BD 537

60V
80V
60V
80V
60V
80V
5V
8A
1A
50W
-65 to 150°C
150°C

DIAGR~~:

Dimensions in mm

MECHANICAL DATA

10/82

45V
45V
45V

BD 535

94

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

2.5
70

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

Icso

Collector cutoff
current (IE = 0)

for 80533
for 80535
for 80537

Vcs= 45V
Vcs = 60V
Vcs= SOV

100
100
100

[LA
[LA
[LA

ICES

Collector cutoff
current (V BE = 0)

for 80533
for 80535
for 80537

VCE = 45V
VCE = 60V
V CE = SOV

100
100
100

[LA
[LA
[LA

lEBO

Emitter cutoff
current (lc = 0)

V ES = 5V

1

rnA

V CEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic

= 100mA for 80533
for 80535
for 80537

Collector -em itte r
saturation voltage

Ic
Ic

= 2A
= 6A

Is
Is

V SE *

Base-emitter voltage

Ic

=2A

V CE = 2 V

hFE *

DC current gain

Ic

= 10 mA

VCE (sat) *

Ic
Ic

fT

Transition frequency

hFE groups**:

J
K

* Pulsed: pulse duration
** Only on request

= 0.2A
= 0.6A

V CE = 5V
for 80533
for 80535
for 80537
= 500mA VCE = 2V
=2A
VCE = 2V
for 80533
for 80535
for 80537

Ic
Ic
Ic
Ic

=
=
=
=

30
15
40
20

300 [Ls, duty cycle

95

1.5%

V
V
V
V

1.5

V

-

-

-

25
25
15
3

2
2
2
2

V
V

20
20
15
40

= 500mA V CE = 1V
V CE =
V CE =
V CE =
V CE =

O.S
O.S

Ic

2A
3A
2A
3A

V
V
V

45
60
SO

12

MHz
75

-

100

-

DC current gain

Safe operating areas

G-2486

&-2484

II II
I I I1111

==J

lit

PULSE OPERATION* ,0::",.::=,=i=
__

VCE=2V

1m.

DC OPERATION

I-

~\

I

10'

1\'\-<+1fM-t+ftl0ms

*FOR SINGLE NON
REPETITIVE PULSE

I \~

---1\

B0537
B0535
BD533-r-

10

. ..

4

,

•

4

10-1

10

G-2490

G-24 88

VcE(sat)

VBE(.at)

8

•

(V)

hFE=10

hFE=10

,

V

/

/

1.5

./
/'

./

,
./

10"'

0.5

••

,

Base-emitter saturation
voltage

Collector-emitter saturation
voltage
(v)

•

lC(A)

o

•lC(A)
•

96

Transition frequency

Collector-base capacitance
G-2423

G 2424

IT

CCBO,

(MHz)

(pF)

VCE=IV

.......

I-"'"

'".'\.

10

I"-

" '\.

r--.....

10'

\

.......

10

4

,

,

•

10-1

IC (A)

Saturated switching characteristics

4

10

Power rating chart

G 2492

G 2495

t

Ptot

(1-'5)6

VCC=30V

(W)

IBl=-IB2

50

hFE=10

40

f': l-t'-..

i
...... ts

...!!.

"
10-1

6.

VCB (V)

I"

I"

"

30

!"-..

l'-

20

~

./

.......

~

10

I"

"'-[\,

"'-

Ion

IC (A)

0

97

50

100

"'-

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The BD 534, BD 536 and BD 538 are silicon epitaxial-base PN P power transistors in Jedec
TO-220 plastic package, intended for use in medium power linear and switching applications.
The complementary NPN types are the BD 533, BD 535 and BD 537 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO

VCES
VCEO

VEBO
Ic, IE

IB
P tot
Tstg
Tj

SO 534

Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector and emitter current
Base current
Total power dissipation at Tcase";:;25°C
Storage temperature
Junction temperature

-45V
-45V
-45V

SO 536

SO 538

-60V
-80V
-60V
-80V
-60V
-80V
-5V
-8A
-1A
50W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR~4:

MECHANICAL DATA

Dimensions in mm

« ~~ '; , '/'
-i"",<

10/82

98

THERMAL OAT A
Rlh j-ease
Rlh j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

2.5
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Min. Typ. Max. Unit

Test conditions

ICBO

Collector cutoff
current (IE = 0)

for B0534
for B0536
for B0538

V CB = -45V
V CB = -60V
V CB = -80V

-100
-100
-100

fLA
fLA
fLA

ICES

Collector cutoff
current (V BE = 0)

for B0534
for B0536
for B0538

VCE = -45V
V CE = -60V
VCE = -80V

-100
-100
-100

fLA
fLA
fLA

lEBO

Emitter cutoff
current (Ie = 0)

V EB = -5V

-1

rnA

V CEO (SUS)* Collector-emitter
sustaining voltage
(lB = 0)

Ie

=

-100mA for BO 534
for BO 536
for BO 538

Collector-emitter
saturation voltage

Ie
Ie

=
=

-2A
-6A

IB
IB

V BE *

Base-emitter voltage

Ie

=

-2A

V CE = -2 V

hFE *

DC current gain

Ie

=

-10 mA VCE = -5V
for BO 534
for BO 536
for BO 538
-500mA V CE = -2V
V CE = -2V
-2 A
for BO 534
for BO 536
for BO 538

VCE (sal) *

Ie
Ic

fT

Transition frequency

hFE groups**:

J

K
* Pulsed: pulse duration
** Only on request

=
=

=
=

-0.2A
-0.6A

Ic

=

-500mA VCE = -1V

Ic
Ie
Ic
Ie

=
=
=
=

-2A
-3A
-2A
-3A

300 [Ls, duty cycle

99

V CE =
V CE =
V eE =
VeE =

-45
-60
-80

-2
-2
-2
-2

1.5%

V
V
V
V

V
V
V
-0.8

V
V

-1.5

V

-0.8

-

20
20
15
40
25
25
15
3
30
15
40
20

-

16

MHz
75
100

-

-

Safe operating areas

DC current gain
G-2485

G-2487

TIll

IT

ITI

I I IIII

PULSE OPERATION 'l:I'0;="'S=l--~

10

VCE=-2V
~

DC OPERATION

lms

~

I
*FOR SINGLE NON

10'

lOms

REPETITIVE PULSE

~

80538
80536
80534-

10~

,

10
10

Collector-emitter saturation
voltage

..

4

••

10-'

1

Base-emitter saturation
voltage

G-248

2491

•
(V) ,

-VCE(sat)

t)
(V)

,

hFE=10

1.5
hFE"'0

,

[;7

1/

/
,•

L---

.....

,
17

-'"

o.s

••

•••
-ICIA)

o

•-ICIA)
•

100

L.,..

V

Collector-base capacitance

Transition frequency

-

IT

CCBO

(MHz)

(pF).

VCE"-lV
15

.....

"\.

'\.

"\.

10

la'

"\.
"\.

a

10

Saturated switching characteristics

• ••

.. ,

••• 10

-VCB(Vl

Power rating chart
G-2 4 9S

G-249

I
(,us)'

Piol
(W)

50

VCC =-30V
[61=-162

1,,\

""

hFE=10

I--

r\.

30

Is
I'.

.......

r--..

r-.!!
Ion

",

20

""

I"

),
10

I

..

o

-[C(A)

101

50

100

"\

1,,\

1,,\

EPITAXIAL-BASE NPN
MEDIUM POWER DARLINGTONS
The BD 675A, BD 677, BD 677A, BD 679, BD 679A and BD 681 are silicon epitaxial-base
NPN power transistors in monolithic Darlington configuration and are mounted in Jedec
TO-126 plastic package. They are intended for use in medium ppwer linear and switching
applications. The complementary PNP types are the BD 676A, BD 678, BD 678A, BD 680,
BD 680A and BD 682 respectively.

ABSOLUTE MAXIMUM RATINGS
Vcso

VCEO
VESO
Ic
ICM

Is

Ptot
Tstg
Tj

B0675A B0677 B0679
B0677 A B0679A

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase';;;25°C
Storage temperature
Junction temperature

45V
45V

60V
60V

80V
80V

B0681
100V
100V

5V
4A
6A
100mA
40W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c
,-------1
B

I

I

I
I

MECHANICAL DATA

"

,

I

R

L_,_._._._._.~ ~n~~g~fi
S·103611

E

,

(llwlij;mthl~"""",!",,,...~,,,,,'of ';,....d. i.""";n'r~lI.«

10/82

Dimensions in mm

TO-12EHSOl-321

102

THERMAL DATA
Rth j-case
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

ELECTRICAL CHARACTERISTICS (T case
Parameter

°C/W

Min. Typ. Max.

Unit

Icso

Collector cutoff
current (IE = 0)

for
for
for
for

B0675A
Vcs =
B0677/677 A V cs =
B0679/679A Vcs=
B0681
Vcs~

4SV
60V
BOV
100V

200
100
200
200

[LA
[LA
fLA
[LA

ICEO

Collector cutoff
current (Is = 0)

for
for
for
for

B0675A
B0677/677A
B0679/679A
B0681

22V
30V
40V
SOV

SOO
100
SOO
SOO

[LA
[LA
[LA
[LA

IESO

Emitter cutoff
current (Ic = 0)

VES = S V

2

mA

VCE(satt

V SE *

hFE *

*

~C/W

2SoC unless otherwise specified)

Test conditions

VCEO(SUS) * Collector-emitter
sustaining voltage
(Is = 0)

i

3.12
100

hfe

Collector-emitter
saturation voltage

Base-emitter voltage

DC current gain

Small signal
current gain

Pulsed: pulse duration

Ic

= SO mA
for
for
for
for

VCE =
VCE =
VCE =
VCE =

B0675A
B0677/677A
B0679/679A
B0681

4S
60
80
100

for B0677/679/681
Ic = 4A
Is = 40 mA
for B0675A/677A/679A
Is = BmA
Ic = 2A
for B0677/679/681
Ic = 1.SA
VCE = 3V
for B0675A/677A/679A
Ic = 2A
VCE = 3V

V

V
V
V
2.7

V

2.8

V

2.S

V

2.S

V

for B0677/679/681
Ic = 4A
VCE = 3V
for B0675A/677 A/679A
Ic = 2A
VCE = 3V

110

-

7S0

-

Ic = 1.SA
f = 1 MHz

1

-

300 [Ls, duty cycle
103

VCE = 3V

1.5%

Safe operating areas

G 2743

IC
(A)

*PULSE OP RAT ION

Ic MAX (PULSED)

\

\

f\.\ \

DC

OPERATION~

.-T·· ITnnr--

-

10}Js- I--

~

\

IC MAX (CONTINUOUS

~ \

~

FOR SINGLE NON
~ REPETITIVE
PULSE

f---

,

i\

100)J2 \.

BD675) 1BD677 - BD677A
BD679 - BD679A

1ms- f--

BDr1
10ms

10

10'

VCE(V)

DC transconductance

DC current gain

-

-

G 275 7

G 2740

IC

hFE •

II

(A)

10'

10'

/

/

'"1\

/"

VCE =3V

I
I

"cE·3V

..

1/
0.5

Ie (A)

104

1.5

VeE

(V)

r
Collector-emitter saturation
voltage

Collector-emitter saturation
voltage
°G261.5

G_274G

YCE(sat )

)

1\

(Y)

hFE=250

\

1.5

le=3A

I
2A
lA

./

0.5

..-'"

0.5

o
'8 (rnA)

Small signal current gain

Saturated switching characteristics
c;~

2 75 S

G-275911

I
(~s)

'" \

Vec=30V
hFE=250

181=-182

YCE =3Y
lC=t5A

Is
:;>00

-If

,

on

10

4

-

--.....

68

Ie (A)

f (MHz)

105

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTONS
The SO 676A, SO 678, SO 678A, SO 680, SO 680A and SO 682 are silicon epitaxial-base
PNP power transistors in monolithic Darlington configuration and are mounted in Jedec
TO-126 plastic package. They are intended for use in medium power linear and switching
applications. The complementary NPN types are the SO 675A, SO 677, SO 677 A, SO 679,
SO 679A and SO 681 respectively.

ABSOLUTE MAXIMUM RATINGS
Vcso
VCEO

VESO
Ic
ICM

Is

Ptot
Tstg
Tj

B0676A

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (repetitive)
Sase current
Total power dissipation at Tcase~25°C
Storage temperature
Junction temperature

B0678 B0680
B0678A B0680A

-45V
-45V

-60V
-60V

-80V
-80V

B0682

-100V
-100V

-5V
-4A
-6A
-100mA
40W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c
,-------1
B

i

I
I

I

I
I

I
1

R2

I

L_~ ____ ~

MECHANICAL DATA

10/82

R1Typ.lOkIl
R2Typ. 150A

Dimensions in mm

106

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

ELECTRICAL CHARACTERiStiCS (Tease
Parameter

ICBO

Collector cutoff
current (IE = 0)

for
for
for
for

B0676A
B0678/678A
B0680/680A
B0682

ICEO

Collector cutoff
current (lB = 0)

for
for
for
for

B0676A
VCE =
B0678/678A V CE =
B0680/680A V CE =
B0682
VCE =

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -5 V

VCE (sat)*

VBE *

hFE *

hie

Collector-emitter
saturation voltage

Base-emitter voltage

DC current gain

Small signal
current gain

* Pulsed: pulse duration

Ic = -50 mA
for
for
for
for

°C/W
°C/W

25°C unless otherwise specified)
Min. Typ. Max. Unit

Test conditions

VCEO(SUS)* Collector-emitter
sustaining voltage
(lB = 0)

3.12
100

V CB =
V CB =
V CB =
V CB =

-45V
-60V
-SOV
-100V

-200
-100
-200
-200

[lA
[lA
[lA
[lA

-22V
-30V
-40V
-50V

-500
-100
-500
-500

[lA
fLA
fLA
[lA

-2

rnA

B0676A
B0678/678A
B0680/680A
B0682

-45
-60
-SO
-100

for B0678/680/682
Ic = -4A
IB = -40mA
for B0676A/678A/680A
Ic = -2A
IB = -SmA
for B0678/680/682
Ic = -1.5A
VCE = -3V
for B0676A/678A/680A
Ic = -2A
VCE = -3V

V
V
V
V
-2.7

V

-2.8

V

-2.5

V

-2:5

V

for B0678/680/682
V CE = -3V
Ic = -4A
for B0676A/678A/680A
Ic = -2A
VCE = -3V

110

-

750

-

Ic =-1.5A
f = 1 MHz

1

-

300 [ls, duty cycle

107

VCE = -3V
1.5%

Safe operating areas

G-2742

-Ic
(A)

"'PIli

E 'lPER TI

,

Ic MAX (PULSED)
I IC MAX (CONTINUOUS

10ps- f--

\

\

II III\. \ \

OC

OPERATlON~ ~ ~

~ IIIIIII

,... FOR SINGLE NON
PULSE

1=== REPETITIVE

~

~

~

~

100us

"
B0676~

-

1ms- -

B0678 - B0678A
B0680 - B0680
BOrO!

10ms

IO~ -VCE(V)

10

DC current gain

DC transconductance
0-2754

,

G-274\

-Ie

I

(A)
6

vCE=-3V

4

i""-..

1\

V
2

10'

,

II

/

V

VCE "-3V

6

II

4

,
10'

6

,

6

-lC

,

(A)

0.5

108

1.5

-VBE (V)

I

iT

Collector-emitter saturation
voltage

Collector-emitter saturation
voltage
G-26~

G-27S0

-veE(sat )

-VCE(sat )

(V)

(V)

I
hFE:250

I

1.5

t--..
·1 :3'"

2~
lA

I

~ -

..,1/

0.5A

I
f'--- --

0.5

------

9-

-16 (mA)

-Ie (A)

Small signal current gain

Saturated switching characteristics
G 2755

G-27Sfi/l

I
(I's)

B
B

,
2

I"'"

10' B

Vce=-30V
hFE'i'250
16,=-162

B

,
le:-1.5A
VeE :-3V

2

10 2

It

B
B

,

s

2

10

I'....

1\

on

B
B
4

2

"

6 8

2

10-2

4

S B

10-1

46 B

2

1

468

f (MHz)

-Ie (A)

109

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The B0705, B0707, B0709 and B0711 are silicon epitaxial-base NPN power transistors
in Jedec TO-220 plastic package intended for use in power linear and switching
applications.
The complementary PNP types are the B0706, B0708, B071 0 and B0712 respectively.

ABSOLUTE MAXIMUM RATINGS
Vcso

VCES

V CEO
V ESO

Ic
Is
Ptot

-

Tstg
Tj

80705

B0707

B0709

B0711

45V
45V
45V

60V
60V
60V

80V
80V
80V

100V
100V
100V

Collector-base voltage (IE = 0)
Collector-emitter voltage (V SE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at Tcase";;;;;25°C
Storage temperature
Junction temperature

5V
12A
5A
75W
-65 to 150·C
150·C

INTERNAL SCHEMATIC DIAGR~

MECHANICAL DATA

10/82

Oimensions in mm

110

THERMAL DATA
Rth

j-case

Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (T case
Parameter
ICBO

Collector cutoff
current (IE = 0)

max
max

for B0705
V CB =
for B0707
V CB =
for B0709
V CB =
for B0711
V CB =
T case = 150°C
for B0705
V CB =
for B0707
V CB =
for B0709
V CB =
for B0711
V CB =

Collector cutoff
current (IB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 5 V

B0705
B0707
B0709
B0711

°C/W
°C/W

25°C unless otherwise specified)

Min_ Typ. Max. Unit

Test conditions

IcEO

1.67
70

V CE =
V CE =
V CE =
V CE =

45 V
60 V
80 V
100 V

100
100
100
100

45 V
60 V
80 V
100 V

1
1
1
1

mA
mA
mA
mA

22
30
40
50

1
1
1
1

mA
mA
mA
mA

1

mA

V
V
V
V

V CEOCsus) * Collector-emitter
sustaining vOltage
(IB = 0)

Ic

V CECsat) *

Collector-emitter
saturation voltage

Ic

=4A

IB

= 0.4 A

V CEK *

Knee voltage

Ic

= 3A

IB

=

V BE *

Base-emitter voltage

Ic

= 4A

V CE = 4V

[LA
[LA
[LA
[LA

= 100 mA

for
for
for
for

111

B0705
B0707
B0709
B0711

**

45
60
80
100

V
V
V
V
1

0.4

V

V
1.5

V

ELECTRICAL CHARACTERISTICS (continued)
Parameter

hFE*

Test conditions

DC current gain

Ic
Ic

Ic

Ic

fT

*

Transition frequency

Ic

= 0.5A
= 2A

= 4A

= 10A

Min. Typ. Max. Unit

V CE = 2V
VCE = 2V
for B0705
for B0707
for B0709
VCE = 4V
for B0705
for B0707
for B0709
for B0711
VCE = 4V
for B0705
for B0707
for B0709
for B0711

40

-

400

-

30
30
30

-

20
15
15
15

30

5
5

10
10

-

150
150
150
150

-

8
8

=300mA VCE = 3V

Pulsed: pulse duration = 300 f1s, duty cycle

120

-

3

MHz

1.5%

** Value for which Ic = 3.3 A at VCE = 2 V
Safe operating areas

G-2468

Ie

II

(Al

Ie MAX

I III I
PULSE OPERATION*
lOps

10

oe OPERATION

""

"

....

"'"

"-

\
8070
80707
80709
80711

10-1

10

112

s

~

\\

6FOR SINGLE NON
REPETITIVE PULSE

lOL

lms
10ms

DC transconductance

DC current gain

G

G 4859

,

I

2

3

10

t. 663

VBE(on )
(V)

I
II

VeE = 4V

,•
,

VCE - 4V

2

·,,
2

10

I

./

,•

-2

2

468 -1

10

2

1

o

, "'

469

10

10

G

4&6

•

G-2427

IT
(MHz)

(V) ,

10 •

I
I

4

,

,
I

-,

10.

i

i

,

&8

.--

;/

"

...........

r-....

"

,

-,

10

VCE=3V

I

hFE= 10

2

10

Transition frequency

Collector-emitter saturation voltage
VCE(sat )

-,

10

IC(AI

.

10

46

e

o

22

10

10- 1

113

Collector-base capacitance

Saturated switching characteristics
G- 4861

G· '1'0

eeso

)

(pF)

Vee=30V
IS1=-IS2
hFE= 10

150
1

"I'..

100

-,

10

10

10'

H2397

(w)

'-

50

"\

"- I\..
r\.

25

"\

"\
50

100

150

If

-

Ves (V)

P'o'

o

Is

t....;;..

Ion

Power rating chart

75

....--

"

50

o

2

Tcase("c)

114

• •

••
Ie (A)

EPITAXIAL·BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
Ttie 80706,80708,80710 and 80712 are silicon epitaxial-base PNP power transistors in
Jedec TO-220 plastic package, intended for use in power linear and switching applications.
The complementary NPN types are the 80705, 80707, 80709 and 80711 respectively.

ABSOLUTE MAXIMUM RATINGS
\/-CBO

V CES
VCEO

V EBO
Ic

IB
Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage ~V BE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
8ase current
Total power dissipation at T case ",:;25'C
Storage temperature
Junction temperature

B0706

B0708

B0710

B0712

-45V
-45V
-45V

-60V
-60V
-60V

-80V
-80V
-80V

-100V
-100V
-100V

:
4

-5V
-12A
-5A
75W
-65 to 150'C
150'C

INTERNAL SCHEMATIC DIAGR:

Oimensions in mm

MECHANICAL DATA
Collector connected to tab.

115

10/82

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICBO

Collector cutoff
current (IE = 0)

max
max

1.67
70

'C/W
'C/W

25'C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

for B0706
for B0708
for B0710
for B0712
Tease = 150'C
for B0706
for B0708
for B0710
for B0712

V CB =
V CB =
V CB =
V CB =

-45 V
-60 V
-80 V
-100 V

-100
-100
-100
-100

/-LA
/-LA
/-LA
/-LA

V CB =
V CB =
V CB =
V CB =

-45 V
-60 V
-80 V
-100 V

-1
-1
-1
-1

rnA
rnA
rnA
rnA

B0706
B0708
B0710
B0712

V CE =
VCE =
V CE =
V CE =

-22
-30
-40
-50

-1
-1
-1
-1

rnA
rnA
rnA
rnA

-1

rnA

ICEO

Collector cutoff
current (IB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (lc = 0)

V EB = -5 V

=

V CEO(sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ic

=

V CEK *

Knee voltage

Ic

V BE *

Base-emitter voltage

Ic

V
V
V
V

-100mA
for
for
for
for

B0706
B0708
B0710
B0712

-4 A

IB

=

-0.4 A

=

-3A

IB

=

**

=

-4A

V CE = -4V

116

-45
-60
-80
-100

V
V
V
V
-1

-0.4

V

V
-1.5

V

ELECTRICAL CHARACTERISTICS (continued)
Test conditions

Parameter
hFE *

DC current gain

Ic
Ic

=
=

-0.5A
-2A

Ic = -4A

Ic

fT

*
**

Transition frequency

Ic

= -lOA

=

Min. Typ. Max. Unit

V CE = -2V
VCE = -2V
for 80706
for 80708
for 80710

40

120

-

400

-

30
30
30

VCE = -4V
for 80706
for 80708
for 80710
for 80712
VeE = -4V
for 80706
for 80708
for 80710
for 80712

-

20
15
15
15

30

5
5

12
12

-

150
150
150
150

-

-

8
8

-300mA V CE = -3V

-

MHz

3

Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
Value for which Ic = -3.3 A at VCE = -2 V
G-246S

Safe operating areas

II

I III I
PULSE OPERATlON*

IC MAX

10J.Js

10

"-

DC OPERATION

1"-

I'-.

~

I I

iii

\ 1\

~

*FOR SINGLE NON
REPETITIVE PULSE

BD7
B0708
B0710
B0712
10

117

1ms
10ms

DC current gain

DC transconductance.
G

4&53

I

VBE(on )

1
11

(V)

IJ

VcE=4

./

'0'1111"l1li
-,

'0

468 -1

'0

2

468

468

2

'0

468

le(A)

'0

Transition frequency

Collector-emitter saturation
voltage
VCE(sat)
(V)

-

~~~~II~~~~~~~~~G!-~4~"~'1I

G 2426

IT
(MHz )

6
5

VeE""-3

L.--'

............

.......

4

uj "OL_,-l-L,Ll..L,W,lL,--.J...ll...L,J..!,JJ,JL,o-L-L.l.,.L,LL,Ul,o-,...ll..,...Ll~.Le.ll(~w)

o
-Ie (A)

118

Saturated switching characteristics

Collector-base capacitance

G

G '656

eeso

I
(1'5)

(pF)

-

-, 857

Vee- 30V

-f---- Ie,=lS2
hFE=10
\

200

"- 1'\

Is

V
r--..

100

'-

-I

10

10

Ves (V)

Power rating chart

-

G 2391

Plot
(W)

75

'\.

50

" 1'\

"

25

" I"\,
o

50

100

"

119

-......
Ion

If

-

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The BO 905, BO 907, BO 909, BO 911 are silicon epitaxial-base NPN power transistors in
Jedec TO-220 plastic package. They are intended for use in power linear and switching
applications.
The complementary PNP types are the BO 906, BO 908, SO 91 0 and BO 912 respectively.

ABSOLUTE MAXIMUM RATINGS
VC80
VCEO
VE80
IE' Ic
18

Ptot
Tstg
TJ

B0907

B0909

B0911

45V
45V

60V
60V

80V
80V

100V
100V

Collector-base voltage (IE = 0)
Gollector-emitter voltage (18 = 0)
Emitter-base voltage (lc = 0)
Emitter and collector current
Base current
Total power dissipation at Tcase";;; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

5V
15A
5A
90W
-65 to 150°C
150°C

DIAGR~~:

MECHANICAL DATA

10/82

B0905

Oimensions in mm

120

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1.4

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 2S'C unless otherwise specified)
Parameter
Icso

Collector cutoff
current (IE = 0)

Test conditions
for 80905
for 80907
for 80909
for 80911
T case = lS0'C
for 80905
for 80907
for 80909
for 80911

ICEO

Collector cutoff
current (Is = 0)

for
for
for
for

80905
80907
80909
80911

IESO

Emitter cutoff
current (Ic = 0)

V ES

= SV

V CEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic

= 100mA

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

VSE (sat) *

Base-emitter
saturation voltage

V SE *

*

Min. Typ. Max. Unit

Vcs= 4SV
Vcs= 60V
Vcs= 80V
Vcs = 100V

SOO
SOO
SOO
SOO

fLA
fLA
fLA
fLA

Vcs=
Vcs=
Vcs=
Vcs =

4SV
60V
80V
100V

S
S
S
S

rnA
rnA
rnA
rnA

VCE =
V CE =
V CE =
V CE =

30V
30V
40V
SOV

1
1
1
1

rnA
rnA
rnA
rnA

1

rnA

for
for
for
for

80905
80907
80909
80911

= SA
= lOA

Is
Is

= O.SA
= 2.SA

1
3

V
V

Ic

= lOA

Is

= 2.SA

2.S

V

Base-emitter voltage

Ic

= SA

V CE = 4V

1.S

V

hFE *

DC current gain

Ic
Ic
Ic

= O.SA
= SA
= lOA

V CE = 4V
V CE = 4V
V CE = 4V

40
lS
S

fr

Transition frequency

Ic

= O.SA

V CE = 4V

3

Pulsed: pulse duration = 300 fLs, duty cycle = 1.S%

121

4S
60
80
100

V
V
V
V

2S0
lS0

-

MHz

Safe operating areas

'CMAX

DC current gain

*PULSE OPERATION

1111
*FOR SINGLE NON
REPETITIVE PULSE

10.~18!t1

. .

10-1
,

6

, 6'

•10'

•

10

-2

10

VCE (V)

"

68 _12

,"

, 6.

46 B

10

1

10

'C(A)

Collector-emitter saturation voltage

DC transconductance
G

VBE(on )

4663

G

4&64

VCE(sat )

(V)

(V) ,

I
VCE =4V

I

hFE= 10

I
I

10

8

6

,

V

o -,
10

-,

2

10.

,/

-2

10

'6 •

10

10

122

468

22

10

,"

'C(A)

Base-emitter saturation voltage
G

Transition frequency

-

48S6

G 2612

VBE(sat )

IT

(V)

(MHz)

VCp4V

I
hFElU

II
1.5

..........
./

......
.;'

./

0.5

16'

IC

10

Collector-base capacitance

(A)

Power rating chart
G 10860

G.,1 644

eeBO

Ptot

(pF)

(W)

150

120

\.
100

90

"-

60

1'-

"

.........

50

30

r-....

"o
10

50

Vee (V)

123

100

i'.
150 Tease (DC)

EPITAXIAL-BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The SO 906, SO 908, SO 91 0 and SO 912 are silicon epitaxial-base PNP power transistors
in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary NPN types are the SO 905, SO 907, SO 909 and SO 911 respectively.

ABSOLUTE MAXIMUM RATINGS

B0906

B0908

B0910

B0912

-45V
-45V

-60V
-60V

-80V
-80V

-100V
-100V

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Emitter and collector current
Sase current
Total power dissipation at Tease';; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-5V
-15A
-5A
90W
-65 to 150°C
150°C

DlAGR~~_~r

E

Oimensions in mm

MECHANICAL DATA

10/82

124

THERMAL DATA
Rth j-ease

ELECTRICAL CHARACTERISTICS (Tease
Parameter
IcBO

*

max

Thermal resistance junction-case

'C/W

= 25'C unless otherwise specified)

Test conditions

Collector cutoff
current (IE = 0)

1.4

Min. Typ. Max. Unit

for B0906
for B0908
for B0910
for B0912
T case = 150'C
for B0906
for B0908
for B0910
for B0912

V CB =
V CB =
V CB =
V CB =

-45V
-60V
-80V
-100V

-500
-500
-500
-500

flA
flA
flA
flA

V CB =
V CB =
V CB =
V CB =

-45V
-60V
-80V
-100V

-5
-5
-5
-5

rnA
rnA
rnA
rnA

B0906
B0908
B0910
B0912

VCE =
VCE =
V CE =
VCE =

-30V
-30V
-40V
-50V

-1
-1
-1
-1

rnA
rnA
rnA
rnA

-1

rnA

ICEO

Collector cutoff
current (lB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (lc = 0)

V EB = -5V

V CEO (sus) * Collector-emitter
sustaining voltage
(IB = 0)

Ic

V CE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

= -5A
= -10A

IB
IB

= -0.5A
= -2.5A

-1
-3

V
V

VBE (sat) *

Base-em itte r
saturation voltage

Ic

= -10A

IB

= -2.5A

-2.5

V

V BE *

Base-emitter voltage

Ic

= -5A

VCE = -4V

-1.5

V

hFE *

DC current gain

Ic
Ic
Ic

= -0.5A
= -5A
= -10A

V CE = -4V
VCE = -4V
VCE = -4V

40
15
5

250
150

-

fT

Transition frequency

Ic

= -0.5A

V CE = -4V

3

Pulsed: pulse duration

= -100mA

for
for
for
for

B0906
B0908
B0910
B0912

= 300 fls, duty cycle = 1.5%
125

V
V
V
V

-45
-60
-80
-100

MHz

DC current gain

Safe operating areas
G 2621

_IC'~_
(A)'~
ICMAX

*PULSE OPERATION

3
10 , _
.

10 I's

'1'\.IOms

10

.
_
Vr , .4 V

1001's
Ims

~ O~~ION~1'x -

10' _

II III
*FOR SINGLE NON
REPETITIVE PULSE

_

I

10,.

f--+-++-I~g ~g~-

.
_

1--+-++lBO 91 0
BO 912 -+---+--ll-H+AI
10-' L_LW--L_ _ _-'---...Lllll..lJl1L_-.L-L...LJLU.llJ
4

68

8

10

4

10'

-22

68

468 _,

10

-VCE (V)

2

46 B

10

10

4

"

IC (A)

Collector-emitter saturation voltage

DC transconductance
G' 4153

I
I

VBE(on )
(V)

VCE(sal )
(V)

4

,

II

10

,
8

hFE"1

4

VCE=4

,
,
8

4

I

'1

2

./

10' 8

,

-,
10'

limn
4

4 ,.

68

1

10

126

10

4 "

Ic(A)

Transition frequency

Base-emitter saturation voltage
G

4654

G-Z613

I
II
II

VSE(sat )
(V)

IT
(MHz)

VCE =-4V

hFE,10

'"

/""

--

.......-

v

,\

V
/"

o
-IC

10

Power rating chart

Collector-base capacitance
G - 4856

ccso

(A)

G-261o'('

Ptot

(pF)

(W)

120

200

\.
\,.

'\
100

90

'-

60

"-

"

30

I'\..

r-....
10

Vee (V)

50

127

100

lI'\..
150 Tease (Oe)

EPITAXIAL-BASE NPN I PNP
POWER DARLINGTONS
The BDV65, BDV65A, BDV65B, are silicon epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in SOT -93 plastic package. They are intended for
use in power linear and switching applications.
The complementary PNP types are BDV64, BDV64A, BDV64B respectively.

ABSOLUTE MAXIMUM RATINGS

* PNP
NPN

V CBO
V CEO

V EBO
Ic
ICM

IB

Ptot
Tstg
Tj

Collector-base voltage (I E = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at T case .;;;; 25°C
Storage temperature
Junction temperature

BDV64 BDV64A BDV64B
BDV65 BDV65A BDV65B
60V
60V

80V
100V
80V
100V
5V
12A
20A
0.5A
125W
-65 to 150°C
150°C

* For PNP types voltage and current values are negative

INTERNAL SCHEMATIC DIAGRAMS
c

PNP

NPN

i-----~--1

• I

I

I

I

I

I

I

R1 '" 5K!1
R2'" 150Tl.

MECHANICAL DATA

I

R1 "'5K!1
L ________ ~ ___ J R2 '" 150!1

Dimensions in mm

GoliectorcOrIne.cted to tab.

(sim. torO:"218ISor~93

10/82

128

THERMAL DATA
Rth j-ease

max.

Thermal resistance junction--case

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICBO

Collector cutoff
t:urrent (I E = 0)

= 25°C unless otherwise specified)

Min. Typ. Max_ Unit

Test conditions
for BDV64/S
for BDV64A/SA
for BDV64B/SB
T case = 150°C
for BDV64/6S
for BDV64A/SA
for BDV64B/SB

V CB
V CB
V CB

=
=
=

60V
80V
100V

400
400
400

pA
pA
pA

V CB
V CB
V CB

=
=
=

30V
40V
50V

2
2
2

mA
mA
mA

=
=
=

30V
40V
50V

1
1
1

mA
mA
mA

5

mA

I CEO

Coller:tor cutoff
current (I B = 0)

for BDV64/6S
VCE
for BDV64A/SA V CE
for BDV64B/5B V CE

iEBO

Emitter cutoff
current (Ic = 0)

V EBO

=

5V

V CEO (susi Collector-emitter
sustaining voltage
(lB = 0)

Ic=

VCE(Sat) * Collector-emitter
satu ration voltage

Ic

=

5A

IB

VBE *

Base-emitter
voltage

Ic

=

5A

VCE

=

hFE *

DC current gain

Ic
Ic
Ic

=
=
=

lA
5A
lOA

VCE
VCE
VCE

= 4V
= 4V
= 4V

IF

=

5A

VF

Parallel diode
forward voltage

1 °C/W

30mA
for BDV64/65
for BDV64A/SA
for BDV64B/SB

129

V
V
V

60
80
100

= 20mA
4V

2

V

2.5

V

2500

-

500

-

1.2

V

1000

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Min. Typ. Max. Unit

Test conditions

hie

Small signal
current gain

Ie = 5A
f = 1 MHz

VeE

CeBo

Collector-base
capacitance

V eB = 10V
f = 1 MHz

IE

ton

Turn-on time

t.

Storage time

tl

Fall time

=

= 4V

60

0

= 5A

IBI = 20mA

IB2 = 20A

Vee = 16V

Ie

-

100

pF

0.5

f.1s

1.1
1.3

**

f.1s
f.1s

2.5
1.0

**

f.1s
f.1s

* Pulsed: pulse duration = 300 f.1s duty cycle = 1.5%
** For PNP types
For PNP types voltage and current values are negative

Safe operating areas

Safe operating areas
-

G - 4746

,

IC
(A)

,

10

II

PULSE OPERATIONS'

IC MAX PU LSEO

"

IC MAX CONT.

6
4

,

'",

IC
(Ai

~ lOj.Js
r-l00j.Js

10
lms
m

"""~

-

--

n--

--

-

-

----

1m.

DC OPERATION- '---<

4

I-

,

BDV64
BDV64A-BDV64B

10-1
4

I-

--

"_L--r- f-- -

-100~s

•
•

""-

---

41-------1----

"

_10j.Js

'",

''*FOR SINGLE NON
REPETITIVE PULSE

- - r--r-

Ie MAX PULSED

j jill

II II
'FOR SINGLE NON
REPETITIVE PULSE

•

~'

II
IC MAX CONT"

4

DC OPERATION

6r---

,

BDV65
BDV65ABDV65B
4

6'

6'

10

10

130

i

DC current gain (BDV64 series)

DC transconductance (BDV64 series)
G 47l. 7

E

•

IC
(A

'r---l VCE =4V

.

,
, 125 ·C'

,

V

,

,

i

VCE=4 V

16

.....

f1 ....253---I--n--"

V

)1-

I

-4OYV ~"

12

/

1/

/

V V

V
!

/

10

1/

, ,I
0.8

IC(A)

Collector-emitter saturation voltage
(BDV64 series)
G

(V)

2.4

Collector-emitter saturation voltage
(BDV64 series)
G 4750

471"

IIII
IIII

VCE (sa I)

1.6

VCE(sat
(V)

3A

6

lOA

hFE =250

1-

o

-,

10

\..

./

o
10

-,

10

IC (A)

131

10

Ie

(mA)

DC current gain (BDV65 series)

DC transconductance (BDV65 series)
G '742

IC
(A)

VCE,4

A

A

/

V

......

12S'C

/
V

1:.c

"

16

....
12

-

/

V

V
V" -40'C

V
10

4

V

/

VCE =111
1

,

10- 1

.

o

IC(A)

0.8

Collector-emitter saturation voltage
(BDV65 series)
G 4744

Collector-emitter saturation voltage
(BDV65 series)
G- 4743

I I

VcE(sat )
(V)

2.4

1.6

I

VeE(....' )
(VI

hFE=2S0

3A

6A

lOA

I\.

o
10- 1

10

IC (A)

10-'

132

10

EPITAXIAL-BASE NPN
POWER LINEAR AND SWITCHING APPLICATIONS
The BDW 51, BDW 51 A, BDW 51 Band BDW 51 C are silicon epitaxial-base NPN power
transistors in Jedec TO-3 metal case. They are intended for use in power linear and
switching applications.
The complementary PNP types are the BDW 52, BDW 52A, BDW 52B and BDW 52C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCES

VCEO
VEBO
Ic
ICM

IB

Ptot
Tstg
Tj

BOWS1 BOWS1 A BOWS1 B BOWS1 C

Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase';;;;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

45V
45V
45V

60V
60V
60V

BOV
BOV
BOV

100V
100V
100V

5V
15A
20A
7A
125W
-65 to 200°C
200°C

4

MECHANICAL DATA

Dimensions in mm

Collector connected to case

133

1O/B2

THERMAL DATA
Rth

j-ease

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (Tease
Parameter
Icso

max

Min. Typ. Max. Unit

for BDW51
Vcs =
for BDW51A Vcs =
for BDW51B Vcs=
for BDW51C Vcs=
Tease = 150°C
for BDW51
Vcs =
for BDW51A Vcs=
for BDW51B Vcs =
for BDW51C Vcs=

45V
60V
80V
100V

500
500
500
500

flA
flA
flA
flA

45V
60V
80V
100V

5
5
5
5

mA
mA
mA
mA

22V
30V
40V
50V

1
1
1
1

mA
mA
mA
mA

2

mA

IcEO

Collector cutoff
current (Is = 0)

for
for
for
for

IESO

Emitter cutoff
current (lc = 0)

V ES = 5 V

VCEO(sus) * Collector-emitter
sustaining voltage
(Is = 0)

°C/W

25°C unless otherwise specified)

Test conditions

Collector cutoff
current (I E = 0)

1.4

BDW51
BDW51A
BDW51B
BDW51C

V CE =
V CE =
V CE =
V CE =

Ic = 100 mA
for
for
for
for

BDW51
BDW51A
BDW51B
BDW51C

45
60
80
100

V
V
V
V

VCE(sat)*

Collector-emitter
saturation voltage

Ic = 5A
Ic = 10A

Is
Is

= 0.5A
= 2.5A

1
3

V
V

VSE(sat) *

Base-emitter
saturation voltage

Ic = lOA

Is

= 2.5A

2.5

V

V SE *

Base-emitter voltage

Ic = 5A

V CE = 4V

1.5

V

hFE *

DC current gain

Ic = 5A
Ic = lOA

V CE = 4V
V CE = 4V

20
5

150

-

fT

Transition frequency

Ic = 0.5A

V CE = 4V

3

* Pulsed: pulse duration

300 fls, duty cycle
134

1.5%

-

MHz

Safe operating areas
(for BDW51 and BDW51A)

G-2679

Ie
(Al

10

Ie

M,b~X

PULSED

I

I

Ie MAX CONTINUOU r\.
t---

PERATIO~JI

• PULSE

100~s

" '"

~ r\

IX

DC OPERATION

I'.

*FOR
SINGLE NON
REPETITIVE P LSE

lms

10ms

BDW51-fBDW51A

10

Safe operating areas
(for BDW51 Band BDW51 C)

Ie
(Al

Ie MAx prUL~Eb
I

I

G.,2680

1

·PULSE OPERATION
,
10}JS-1--

I I I II

Ie MAX CONTINUOUS r\.
10

InC'

*

n~

t'\,.i'"
~

lOOps

1\

,,
FOR SINGLE NON

i"Si:
lms-1--

1--+--+-+-1-+-11-+1-1 BOW SIB -+--+-++-'"

lOms

BDw~e~~~~---+~

10-1

'----IL...-..L.......JL..L.L.l..l.lL_...lI_LJ..J.JUllL_LJ
10

135

DC transconductance

DC current gain

EII

G - 4&63

G - 4859

hFE _ _

VBE(on )
(V)

L

VCE = 4V

_111.

2

10

I
I

.;'

10·IIIIIftII.

-2

10

4 6 8 -1

2

46.

468

10

1

o

46.

10

-1

10

IC(A)

10

Base-emitter saturation voltage

Collector-emitter saturation voltage

G 48S8

G 'I"

VCE(sal )

VBE(sal )

(V)

(V)

4

I

,
10

·,
·
·,

t

I

hFE= 10

hFE'U

6

I

II

4

1.5

6

4

,

V

-1

10

6

./

4

:

-2

10

-1

10

46.

46'

1

469

10

22

10

0.5

46'

IC(A)

10

136

Transition frequency

Collector-base capacitance
G- 10&60

G-2612

tT

eeso

(MHz)

(pF)

VeE=J.V

150

\.

I'\.

100

........
./

...-

........

50

V

a

-,

10

10

Ic

VeB (V)

Power rating chart

;:;aturated switching characteristics
G

(A)

4861

0-24

t

Ptot

(1'5 )

(W)

Vee= 30V

IB,.-I B 2
hFE= ,0

,

2

---

-,

,0

150

I

..:;.

I'
If
100

-

ton

"-

"

50

,

r...:
I'

"-

"

-....
~

e
50

Ie (A)

137

100

150

Tease (OC)

EPITAXIAL-BASE PNP
POWER LINEAR AND SWITCHING APPLICATIONS
The BOW 52, BOW 52 A, BOW 52B and BOW 52C are silicon epitaxial-base PNP power
transistors in Jedec TO-3 metal case. They are intended for use in power linear and
switching applications.
The complementary NPN types are the BOW 51, BOW 51 A, BOW 51 B and BOW 51 C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CES
VCEO

VEBO
Ic
ICM

IB

P tot
T stg
Tj

BDW52 BDW52A BDW52B BDW52C

Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tcase~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DlAGR:

-45V
-45V
-45V

-60V
-60V
-60V

-80V
-80V
-80V

-100V
-100V
-100V

-5V
-15A
-20A
-7A
125W
-65 to 200°C
200°C

4

MECHANICAL DATA

Oimensions in mm

':CoHectpr c"mn~cted tcease
62ma1o;

8.7 m..

11.7

1.1 max

TO-3

10/82

138

THERMAL DATA
Rth j-case

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (T case

for BDW52
V CB =
for BDW52A V CB =
for BDW52B V CB =
for BDW52C V CB =
T case = 150°C
for BDW52
V CB =
for BDW52A V CB =
for BDW52B V CB =
for BDW52C V CB =

Collector cutoff
current (IE = 0)

BDW52
BDW52A
BDW52B
BDW52C

IcEO

Collector cutoff
current (IB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -5 V

VCEO(sust Collector-emitter
sustaining voltage
(IB = 0)

1.4

°C/W

25°C unless otherwise specified)

Test conditions

Parameter
IcBO

max

V CE =
V CE =
V CE =
V CE =

Min. Typ. Max. Unit
-45V
-60V
-80V
-100V

-500
-500
-500
-500

,.A
,.A
,.A
,.A

-45V
-60V
-80V
-100V

-5
-5
-5
-5

mA
rnA
rnA
rnA

-22V
-30V
-40V
-50V

-1
-1
-1
-1

rnA
rnA
rnA
rnA

-2

rnA

Ic = -100mA
for
for
for
for

BDW52
BDW52A
BDW52B
BDW52C

-45
-60
-80
-100

V
V
V
V

VCE(sat)*

Collector-emitter
saturation voltage

Ic = -5A
Ic = -10A

IB
IB

= -0.5A
= -2.5A

-1
-3

V
V

VBE(Sat) *

Base-emitter
saturation voltage

Ic = -10A

IB

= -2.5A

-2.5

V

V BE *

Base-emitter voltage

Ic = -5A

V CE = -4V

-1.5

V

DC current gain

Ic = -5A
Ic = -10A

VCE = -4V
V CE ,= -4V

20
5

150

-

Ic = -0.5A

V CE = -4V

3

hFE*

,
fT

Transition frequency

* Pulsed: pulse duration

300 ,.S, duty cycle
139

1.5%

-

MHz

Safe operating areas
(for BDW52 and BDW52A)

G-2682

-Ie
(A)

Ie

M~X

I

I

JJ.

• PULSE

PULSED

PERATION
100J:lS

,"~ \

I

Ie MAX CONTINUOU
10

'-

f - - DC OPERATION

"

*FOR
SINGLE NON
REPETITIVE PULSE

"'
lms

tOms

BDW52- i - BDW52A

10

Safe operating areas
-Ie
(for BDW52B and BDW52C)

G-2681

Ie MAx

(A)

10

ur-VCE (V)

pIUL~ETD I

I

I

I I I

Ic MAX eONTINUOU 5I "- "

./

In~nPF"l!JI I N

,.

,

.PULSE OPERATIO

'-

'"

~g~F"'~~I~LEPN~~

10}Js-f---

\,

100}JS

\

"\~
1\
1ms- -

BDW528
BDW5iC

10

140

10ms

DC transc;onductance

DC current gain

G . . Sl

G-'('852

hFE~_1111

I
I
I

VBE(on )
(V)

II
''cE=4V

~

...,
10, _ _ _

468 _,

-2

10

2

,. 68

468

10

2"

10

-,

68

Ie (A)

Base-emitter saturation voltage

Collector-emitter saturation voltage
G-

V.

••

,

(V)

10

10'

G loBS4

I

VBE(sat )
(V)

I

2

10,

•

hFP10

4

2

1
4.

--

10'

2

-2

10

-

10'

2

,

..

111111

.,

2

10

111111

/

.,.,/

o

"

1<;'

Ie(A)

141

10

Ie(A)

Transition frequency

Collector-base capacitance

G- 2613

G 48S6

CCBO

IT

(pF)

(MHz)
VCE =-4V

I\,

200

"- '\

.........

./

./

\

I'-..

100

;'

/'

-I

10

10

-Ie

VCB (V)

Power rating chart

Saturated switching characteristics
6-1,.857

I

(A)

G_2S4

(I'S )

, - VCC=30V
-

Ie,. le2

hFE= 10
150

2

.--

Is

......

..............

If
100

"........

i,....-

......

Ion

50

i'-...

I'

-,

10

50

142

100

150

'"

EPITAXIAL-BASE NPN
MEDIUM POWER DARLINGTON
The BOW 91 is a silicon epitaxial base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-39 metal case. It is intended for use in switching and
linear applications. The complementary PNP type is the BDW92.

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO
V EBO
Ic
IB
Ptot
Tstg
Tj

Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I C= 0)
Collector current
Base current
Total power dissipation at T case:<:;25°C
T amb :<:;25°C
Storage temperature
Junction temperature

180
180
6
4
100
10
1
-65 to 200
200

V
V
V
A
mA
W
W
°C
°C

INTERNAL SCHEMATIC DIAGRAM

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-39

143

5/80

THERMAL DATA
Rth j-case
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

17.5
175

max
max

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

ICBO

Collector cutoff
current (I E= 0)

V cs=180V

50

IlA

, cEO

Collector cutoff
current (I B= 0)

V CE=90V

50

IlA

lEBO

Emitter cutoff
current (I C= 0)

VB~6V

0.4

2

rnA

V CEO (sus)Coliector-emitter
sustaining voltage

Ic =50mA

180

V CE (sat) * Collector-emitter
saturation voltage

Ic =2A

I B =4mA

V BE *

Base-emitter
voltage

Ic =2A

V CE=2V

hFE*

DC current gain

Ic =2A
Ic =50mA

V CE=5V
V CE=5V

V F*

Parallel diode
forward voltage

'F =2A

hIe

Small signal
currente gain

I C =0.5A
f = 1 MHz

2

V

2.5

V

10003000
150 300
2.5

V CE=2V

* Pulsed: pulse duration = 300 Ilsec, duty cycle =
144

V

1%

20

V

-

G-3926

Safe operating areas

IC

PULSE OPERATION

IC MAX PULSED

(A)

Kl}Js

100

1\

IC MAX
CONT

}JS

.\

lms ~

"

\

:--- DC OPERATION

n
11 II

11

\

"-

\

r-.

*FOR SINGLE NON
REPETITIVE PULSE;

\

"

,

2

4

6

2

B

DC current gain

4

6

2

8

10 2

10

4

6

8

VeE (V)

180

DC transconductance
G- 3921

G~3920

Ie

,
8

(A)

f..,..

f'\t\

l,..-y
10 3

8

' t e 2V
'tE -5V

10'

/17

IVrE =2V

IJ

1\
J
II

10

,

,

, '8

8

10- 1

,

'8

0,5

Ie (A)

145

1,5

VeE

(V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage
0- 3923

G 3922

VeE(sall

I

Ie:
3A
~ 2A
lA
~
O,5A
0,1 A

-

(Vl
"FE=
hFE=250hFE=50

1,5

-f-j

I
fI..

I fJ
I/,
~

.

\

\
0,5

o

,

, 6.

68

10 -,

1

,

68

Ie

(Al

o

,

6 8

,

10-'

Base-emitter saturation voltage

68

,

68

Ie

10

(rnA)

Saturated switching characteristics

-

G 3924

)

t
(ps)

h FE =250

G"3925

,

I\:c

=30V
hFE=250
Iel =-Ie2

1,5
If

V

..,...

~b:

I'-

Is

0,5

6

6

8

Ie

i

• •

8

(A)

••
Ie

146

(A)

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTON
The BOW 92 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration mounted in Jedec TO-39 metal case. It is intended for use in switching and
linear applications.
The complementary N PN type is the BDW91.

ABSOLUTE MAXIMUM RATINGS
Vcso
VCEO
VESO
Ic
Is
Ptot

-180
V
-180
V
-6
V
-4
A
-100 mA
10
W
1
W
-65 to 200°C
200
°C

Collector-base voltage (I E= 0)
Collector-emitter voltage (I s= 0)
Emitter-base voltage (I c= 0)
Collector current
Base current
Total power dissipation at T case 525°C
T amb 525°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGRAM
I-~----·

-

-- 1

i

!

I

.._J

MECHANICAL DATA

R\ Typ.IOkfi

R1Typ.l50n

Dimensions in mm

147

5/80

THERMAL DATA
Rth i-case
Rthi-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

17.5 °C/W
175 °C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

IcBO

Collector cutoff
current (I E= 0)

V cs=-180V

-50

itA

I CEO

Collector cutoff
current (I B= 0)

V CE=-90V

-50

itA

lEBO

Emitter cutoff
current (I C= 0)

VB~ -6V

-0.4

-2

mA

V CEO (sus) *Collector-emitter
sustaining voltage

I C =-50 mA

-180

VCE (sat) * Collector-emitter
saturation voltage

I C =-2A

I B =-4mA

V CE=-2V

VBE*

Base-emitter
voltage

I C =-2A

hFE*

DC current gain

V CE=-5V
Ic =-2A
Ic =-50mA V CE=-5V

V F*

Parallel diode
forward voltage

If =·2A

hIe

Small signal
current gain

I C =-0.5A
f = 1MHz

-2

V

-2.5

V

10003000
150 300
-2.5

V cE=-2V

* Pulsed: pulse duration = 300115. duty cycle = 1 %
148

V

20

-

V

-

G-3926

Safe operating areas

- Ie

PULSE OPERATION

Ie MAX PULSED

(~)

KlJ-ls
100

1\

I

leMAX~

I"i\

CONT.

~s

lms

,~

"

\

r--- DC OPERATION

I II

1\

, I IT

\

~FOR SINGLE NON

REPETITIVE PULSE

\

10- 2
2

4

6

2

B

DC current gain

4

6

2

8

6

4

B

10 2

10

DC transconductance
-

G 3929

G 3928

,

-Ie

(Al

-

2

K'

vj..oo

10'

t-

I\. 'IcE =-5V

II

VeE =-2V

].,I

/

10

V

'IcE =-2V'

1/
4

6

,

4

6'

4

-Ie

6'

o

(A)

149

0,5

1,5

-VeE (V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G-3930

-VCE(sal )

G 3931

-VCE(sal )

(V)

1,5

II

(V)

hFE=500
hFE =250
hFE - 50

I

/

1//.

I

---

-\-

/

\.

~

\

----- I---::::

V/

\

"

......

0,5

4

10- 1

6

4

B

4

68

10- 1

-IC

68

4

(A)

68

4

68

4

68

10

10- 1

Base-emitter saturation voltage

-

ICC
3A
2A
lA
0,5 A
0.1 A

-IS

(mA)

Saturated switching characteristics
-

6-3932

G 3933

I

-VSE(sa1

(".)

B

Vee =-30V
hFE =250
lSI =-IS
If

hFE =250

......

~<

/'

I.

ton .....

i'""---

V

-"
r-

o

f----

10- 1
6

10- 1

8

6

8

10- 1

-IC (A)

150

-IC (A)

EPITAXIAl·BASE NPN
POWER DARLINGTONS
The BDW 93, BDW 93A, BDW 93B and BDW 93C are silicon epitaxial-base NPN
transistors in monolithic Darlington configuration and are mounted in Jedec TO-220
plastic package. They are intended for use in power linear and switching applications.
The complementary PNP types are the BDW 94, BDW 94A, BDW 94B and BDW 94C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEO

Ic
ICM

IB
P tot
Tstg
Tj

BDW93 BDW93A BDW93B BDW93C

Collector-base voltage (IE = 0)
Collector-emitter voltage (I~ = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease";; 25°C
Storage temperature
Junction temperature

45V
45V

60V
60V

80V
80V

100V
100V

12A
15A
0.2A
80W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM

,----_

( C

.. -

I

B

I

I
I

I

L ____ _

Rl Typ.10k!l.

R2 Typ. 150n

Dimensions in mm

MECHANICAL DATA
Collector connected to tab.

TO-220

151

10/82

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max

1.S6

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 2S o C unless otherwise specified)

IcBO

Collector cutoff
current (IE = 0)

for BDW93
for BDW93A
for BDW93B
for BDW93C
Tease= 1S0°C
for BDW93
for BDW93A
for BDW93B
for BDW93C

BDW93
BDW93A
BDW93B
BDW93C

ICEO

Collector cutoff
current (lB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (lc = 0)

V EB = SV

V CEO (sust Collector-emitter
sustaining voltage
(IB = 0)

Min. Typ. Max. Unit.

Test conditions

Parameter

Ic
for
for
for
for

V CB =
V CB =
V CB =
V CB =

4SV
60V
SOV
100V

100
100
100
100

flA
flA
flA

V CB =
V CB =
V CB =
V CB =

4SV
60V
SOV
100V

S
S
S
S

mA
mA
mA
mA

V CE
V CE
VCE
VCE

40V
60V
SOV
SOV

1
1
1
1

mA
mA
mA
mA

2

mA

=
=
=
=

= 100mA
BDW93
BDW93A
BDW93B
BDW93C

4S
60
SO
100

f1A

V
V
V
V

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

= SA
= 10A

IB
IB

= 20mA
= 100mA

2
3

V
V

VBE (sat) *

Base-emitter
saturation voltage

Ic
Ic

= SA
= 10A

IB
IB

= 20mA
= 100mA

2.S
4

V
V

hFE *

DC current gain

Ic
Ic
Ic

= 3A
= SA
= 10A

V CE = 3V
V CE = 3V
V CE = 3V

VF*

Parallel-diode
forward voltage

IF
IF

= SA
= 10A

hIe

Small signal
current gain

Ic
f

= 1A
= 1 MHz

-

20000
1.3
1.S

2
4

V
V

VCE = 10V

* Pulsed: pulse duration = 300 fls, duty cycle = 1.S%
152

1000
7S0
100

20

-

Safe operating areas
(for BDW93 and BDW93A)

G-261Q11

Ie

8

(A)

6

* PULSE
OPERATION

Ie MAX

i - t--

10

5ms' 1 ."lI.

-r

h1",
r---r-"-r---- DCL-~R~TION

I II

i

"

100,us

"'

*FOR SINGLE NON
REPETITIVE PULSE

\

I

BOW93
BOW93A-

II

10-'
4

6

4

8

10

Safe operating areas
(for BDW93B and BDW93C)

6

8

VCE (V)

-

G 262511

IC

(A)

B
6

*PUlSE OPERATION

IC M"X

10

5ms, Ims"~O...s

B

I---

~CI-I ~t1tON ~ "- " ~

* FOR SINGLE NON \
REPETITIVE PULSE

BDW9JB
BOW93C

10-'

4

6

8

4

10

153

6

8

VeE (V)

DC transconductance

DC current gain

G 2603

6-2600

IC
(A)

VCE =3V
7.5

VCE =3V

'I

10'

I

V
10'

\

)/
II

2.5

10'
(A)

veE (V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage

IC

G_2601

G 260 2

vCE(satlH-++-+-H-+++-H--+-++-+-H-+---H

)

(V)

\
~=5t

1.5

-

...,....

.....

3A
1A

0.5A
0.5

2.5

7.5

IC (A)

la

154

(rnA)

Small signal current gain

Collector-base capacitance
G- 2402

G 260 4

CCBO

.±:j::

8

(pF)
8

,

\

,

10'

I

-

i---

IC=2A

la'

10'

1\

10

~-

i

i
I i' i

1

VCE 3V

I

!

,

_.

10
f (MHz)

10

Power rating chart

Saturated switching characteristics

G 2683

G_259911

1

Ptot
(W)

(~s)

hFE 250
100

VCC-30V
191 =-192

I

t

L----

r-- r-

80

r- ~

l'

60

to~

"

'i',.

f'.-

40

20

Ie (A)

a

155

25

50

75

f'

"

100

't-...

i'-...

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BDW 94, BDW 94A, BDW 94B and BDW 94C are silicon epitaxial-base PNP
transistors in monolithic Darlington configuration and are mounted in Jedec TO-220
plastic package. They are intended for use in power linear and switching applications.
The complementary NPN types are the BDW 93, BDW 93A, BDW 93B and BDW 93C
respectively.

ABSOLUTE MAXIMUM RATINGS
VC80
VCEO

Ic
ICM

18
P tot
T stg
Tj

BDW94 BDW94A BDW94B BDW94C

Collector-base voltage (IE = 0)
Collector-emitter voltage (18 = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tcase~ 25°C
Storage temperature
Junction temperature

-45V
-45V

-60V
-60V

-80V
-80V

-100V
-100V

-12A
-15A
-0.2A
80W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM

MECHANICAL DATA

Dimensions in mm

Collector connected .to tab.

TO-220

10/82

156

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1,56

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICBO

Collector cutoff
current (IE = 0)

Test conditions
for BDW94
for BDW94A
for BDW94B
for BDW94C
Tease = 150°C
for BDW94
for BDW94A
for BDW94B
for BDW94C

BDW94
BDW94A
BDW94B
BDW94C

ICEO

Collector cutoff
current (IB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (lc = 0)

V EB = -5V

V CEO (sus) * Collector-emitter
sustaining voltage
(IB = 0)

Ic
for
for
for
for

Min. Typ. Max. Unit

V CB
V CB
V CB
V CB

=
=
=
=

-45V
-60V
-80V
-100V

-100
-100
-100
-100

f1A
f1A
f1A
f1A

V CB
V CB
V CB
V CB

=
=
=
=

-45V
-60V
-80V
-100V

-5
-5
-5
-5

mA
mA
mA
mA

VCE
VCE
VCE
VCE

=
=
=
=

-40V
-60V
-80V
-80V

-1
-1
-1
-1

mA
mA
mA
mA

-2

mA

= -100mA
BDW94
BDW94A
BDW94B
BDW94C

-45
-60
-80
-100

V
V
V
V

VCE"fsat) *

Collector-emitter
saturation voltage

Ic
Ic

= -5A
= -10A

IB
IB

= -20mA
=-100mA

-2
-3

V
V

VBE (sat)*

Base-emitter
saturation voltage

Ic
Ic

= -5A
= -10A

IB
IB

= -20mA
=-100mA

-2,5
-4

V
V

hFE *

DC current gain

Ic
Ic
Ic

= -3A
= -5A
= -10A

VCE = -3V
VCE = -3V
VCE = -3V

V F*

Parallel-diode
forward voltage

IF
IF

= 5A
= 10A

hte

Small signal
current gain

Ic
f

= -1A
= 1 MHz

20000

1,3
1,8
VCE = -10V

* Pulsed: pulse duration = 300 f1s, duty cycle = 1,5%
157

1000
750
100

20

2
4

V
V

-

Safe operating areas
(for BDW94 and BDW94A)

-

G 262911

-I C

B

(A)

6

100,us

5ms 1 -~

10

DC

,

* PULSE
OPERATION

IC MAX

I,

OPERATION
I

1111

1\

*FOR SINGLE NON
REPETITIVE PULSE

BDW94
BDW94A-~

III

10-'
4

6

B

4

6

B

10

Safe operating areas
(for BDW94B and BDW94C)

4

10'

6

B

-VCE (V)

-

G 2626/1

-I C

B

(A)

6

1
---<-

IC MAX

* PULSE OPERATION

5m~ lm~100!Js

10
4-

"

I---

~CdIYTI!bN

-'

~

* FOR SINGLE NON
REPETITIVE PULSE

I'

,

~

BDW948
BDW94C

10-'
4

6

B

4

10

158

6

B

4

10'

6

B

-VCE (V)

DC current gain

DC transconductance
6-2

6.6

6.'

-IC
(A)

VCE=-JV
7.5

VCE =-3V

10'

II

V

/"

10'

2.5

10'
-IC

(AI

-VBE

Collector-emitter saturation voltage

(V)

Collector-emitter saturation voltage
G-2608

B-2607

-VCE(sat I
(V)

hFE=250
IC=-5A
JA
-IA
-o.5A

~

2.5

0.5

7.5

J

-IC (A)

159

-Is (mA)

Small signal current gain

Collector-base capacitance

-

G 2404

G-26n

CCBO,
(pF)

6

'I

10'

VeE -3V

f--

'c=-2A
10'

10'

-

t--

1\

10

--

10

10-2

6

f (MHz)

10

Power rating chart

Saturated switching characteristics
t

8

-VCB (V)

G-2683

6-2610/1

(~s)

Ptot
(W)

hFE 250
100

Vee =-30V
'81=-182

80

tf

r--- ts
ton

60

-

" "'

I'-.
~

40

I'"

20

"

,
-IC (A)

o

160

25

50

75

100

I'-..

"

EPITAXIAL·BASE NPN
POWER DARLINGTONS
The BDX 53, BDX 53A, BDX 53B and BDX 53C are silicon epitaxial-base NPN transistors
in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic
package, intended for use in hammer drivers, audio amplifiers and other medium power
linear and switching applications.
The complementary PNP types are the BDX 54, BDX 54A, BDX 54B and BDX 54C
respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEO
VEBO
Ic
ICM

IB
P tot
T stg

Tj

BDX53

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase~25°C
Storage temperature
Junction temperature

BDX53A BDX53B BDX53C

60V
60V

45V
45V

80V
80V

100V
100V

5V
8A
12A
0.2A
60W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.
to.4""'·

I

z....I-\.
~
0.5
,",,, L

161

TO-220

6/77

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

=

2.0B
70

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

IcBO

Collector cutoff
current(IE = 0)

for
for
for
for

BDX53
BDX53A
BDX53B
BDX53C

V CB =
V CB =
V CB =
V CB =

45V
60V
BOV
100V

200
200
200
200

J1A
J1A
J1A
J1A

IcEO

Collector cutoff
current (IB = 0)

for
for
for
for

BDX53
BDX53A
BDX53B
BDX53C

VCE =
VCE =
VCE =
V CE =

22V
30V
40V
50V

500
500
500
500

J1A
J1A
J1A
J1A

'EBO

Emitter cutoff
current (Ic = 0)

V EB

2

mA

VCEO(sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ic

VBE(sat) *

Base-emitter
saturation voltage

hFE *
VF

*

= 5V

= 100 mA
for
for
for
for

BDX53
BDX53A
BDX53B
BDX53C

= 3A

'B

= 12mA

2

V

Ic

= 3A

IB

= 12mA

2.5

V

DC current gain

Ic

= 3A

V CE = 3V

Parallel-diode
forward voltage

'F
IF

= 3A
= BA

Pulsed: pulse duration

300 J1s, duty cycle
162

45
60
BO
100

V
V
V
V

-

750

1.B
2.5
1.5%

2.5

V
V

G- 2623

Safe operating areas

IC

II

I

(A)

.

Ie
10

I IIIII
1 T ITII

I
I I 1.11
MAX PULSED I

i

PULSE OPERATION*

lO~s

Ie MAX CONTINUOUS'

"--

,

~

~PERATION

"-

il

-t-

*FOR SINGLE NON
REPETITIVE PULSE

BDX53

YlO1JS

\

-- --

\1

Ims

\

--

f

,

---

BDX53
-

BDX53
BDX53

10

DC transconductance

DC current gain

6-2603

6-2600

IC
(Al

VCE=3V

7.5

VCE =3V

10'

./
10'

\

//
2.5

10'
IC

VeE (Vl

(Al

163

Collector-emitter saturation voltage

Collector-emitter saturation voltage
6-2601

G-2tl02

VeE(sat)
(V)

I-

le=Sf l -

1.S

hFE=2S0

"t--o

I\.
3A
lA
o.SA
o.S

o

2.5

lS

Ie (A)

o

Small signal current gain

Saturated switching characteristics
6-2 59911

t
(1'5)

hFE=250
VCC=30V

----

10'

161=-162

--I

....Is
lon-=

\

10

11,\1111

IIIXlI
10'"

10'"

10-'

, (MHz)

Ie (Al

164

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The BDX 53E, BDX 53F are silicon epitaxial base NPN transistors in monolithic
Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary PNP types are the BDX 54E and BDX 54F respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
Ic
ICM

IB
Ptot

Tstg
Tj

BDX53E BDX53F

Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case.$25°C
Storage temperature
Junction temperature

140V
140V

160V
160V

5V
8A
12A
0.2A
60W
-65 to 150°C
150°C

-rk----- *

INTERNAL SCHEMATIC DIAGRAM

i

('C

r-

I? __ -L I

!

I

1

,

~,
___ __ I---.J
~

~

5,-103611

6E

R1T~p.l0H~
R2 Typ. 150n

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.

l.L.W.-

~I..-

165

5/80

THERMAL DATA
Thermal resistance junction-case
Thermal resistance junction-ambient

Rth j-case
Rthj-amb

max
max

2.08 °C/W
70 °C/W

ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

IcEO

Collector cutoff
current (I B= 0)

for BDX53E
for BDX53F

V CE= 70V
V cr'80V

O.S
O.S

mA
mA

ICBO

Collector cutoff
current (I E= 0)

for BDX53E
for BDX53F

VcB =140V
VcB =160V

0.2
0.2

mA
mA

lEBO

Emitter cutoff
current (I E= 0)

V EB=SV

S

mA

V CEO (sus) ·Collector-emitter
sustaining voltage
(IB= 0)
VCE (sat)

•

VBE (sat)

•

Ic =SOmA
for BDX53E
for BDX53F

140
160

V
V

Collector-emitter
saturation voltage

Ic =2A

IB =10mA

2

V

Base-emitter
saturation voltage

Ic =2A

I B =10mA

2.S

V

hFE

DC current gain

Ic =2A
Ic =3A

VcrSV
VcrSV

V F•

Parallel diode
forward voltage

IF =2A

hie

Small signal
currente gain

I c =0.5A
f = 1 MHz

•

• Pulsed: pulse duration = 300

jJ.S,

-

2.S

Vcr2V

duty cycle = 1%
166

SOO
lS0

20

V

-

G-3927/1

Safe operating areas

IC 8
(Ah ICMAX

*

-PULSE

~bPERATlON

"

I\,

" '\I~S
1

~

10llls

100~

I

- I II

illS

Ll ...

!L

~

I

DC OPERATION--''

I'
i*FOR SINGLE NON
REPETITIVE PULSE

4

6

8

10

DC transconductance

DC current gain

-

G 3921

Ie
(Al

......
10'

",/

•

"'\\

'i::E =2V
'i::E=5V

.I
10'

/

V

VeE =2V \

I

.,.

10
10-'

10-'

. ,.

., .

V

o

Ie (Al

167

0,5

1.1
1,5

VeE (Vl

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G-3923

G 3922

I

VCE(sa I

)

-

(V)

hFE=500hFE =250hFE=50

1,5

---I
I

'----

riJ...

t

Ie:
3A
2A
1A
O,SA
0,1 A

\

/

to/.

W

~

\

0,5

L,

6

iii

4

6 8

Ie

(A)

o

4

6 8

4

6

8

68

J,

10

IS

(mA)

Saturated switching characteristics

Base-emitter saturation voltage

-

G 3924

)

I
(ps)

-

G 3925
8

I\:;e 30V
hFE=250

h FE =250

lSI = IS2

--~

1,5

I

0,5

........

6

8

~

..,.

4

6

Ie

_If

I

~:'"

I

'Is
./

,

8

(A)

Ie

168

(A)

EPITAXIAL-BASE NPN
MEDIUM POWER DARLINGTON
The BDX53S is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and is mounted in Jedec TO-39 metal case.
It is intended for use in medium in power linear and switching applications.
The complementary PNP type is the BDX54S

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO
V EBO

Ic
ICM

IB

Ptot

Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case :<:;25°C
T amb :<:;25°C
Storage temperature
Junction temperature

150
V
150
V
5
V
6
A
10
A
0.2
A
15
W
1
W
-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGRAM

Dimensions in mm

MECHANICAL DATA
Collector connected to case

169

5/80

THERMAL DATA
Thermal resistance junction-case
Thermal resistance junction-ambient

Rth j-case
Rth j-amb

max
max

11.66 °C/W
175 °C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

Collector cutoff
current (I E= 0)

ICBO

Test conditions

Min. Typ. Max.

Unit

V cs=150V
T case= 125 "C
V cs=150V

0.2

mA

2

mA

0.2

mA

5

mA

ICEO

Collector cutoff
current (I B= 0)

V CE=75V

lEBO

Emitter cutoff
current (I C =0)

V EB=5V

V CEO (sustCollector-emitter
sustaining voltage
(lB = 0)

Ic =50mA

150

of<

Collector-emitter
saturation voltage

Ic =2A

I B =8mA

of<

Base-emitter
saturation voltage

Ic =2A

1B

DC current gain

Ic =100mA V CE=5V
V CE=5V
Ic =2A

V Fof<

Parallel diode
forward voltage

IF =2A

hIe

Small signal
currente gain

I C =0.5A
f = 1 MHz

V CE (sat)

V BE (sat)

hFE

of<

=8mA

2

V

2.5

V

100
500

-

2.5

V CE=2V

'" Pulsed: pulse duration = 300 ~s, duty cycle = 1 %
170

V

20

V

-

G-3919

Safe operating area

Ie

PULSE OPERATION.

IC MAX

(A)

10~5

l\:

"!'.

I
lms

100
~s

1\

~

\

I~
t--- DC OPERATION

,

~

r"I

\

lIJFOR SINGLE NON
REPETITIVE PUL SE
10- 1

I

10- 2

6

4

B

2

10

4

6

B

2

10

4

2\0

6

B

DC transconductance

DC current gain

G-3921

G-3920

Ie
(AI
jo.",

10'

I,,\~

1/'1-'

•

'tE =2 V
'tE=5V

v
.;IV
10'

IV"F =2V

•
I

10

,

10-'

6

, 6'

•

10-'

, '8

o

Ie (AI

171

0,5

1,5

VeE

(VI

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 3922

G -3 923

VCElsal )

r

t

Ie:

r

(V)

1-- 3A

2A
I----- IA
0,5 A
0,1 A

hFE=500

l------

hFE =250
hFE=50

1,5

-l..J

I [I

l------ I--

7 tl..

I '/

I/,

W

!\
\

0,5

o

4

,

6 8

10

6

,

_1

4

6 8

IC

(A)

4

Base-emitter saturation voltage

a

4

6

8

4

10

6

18

a

(rnA)

Saturated switching characteristics

G- 392to

I
(~s)

V8E(sat )
(V)

6

10- 1

h FE =250

f----

-

G 3925

,

I\;e -30 V

,
,

hFE-250
lSI =-182

1,5
2

-

,

~

6

I
I

~~

If

~~

'"

Is

!

0,5

6

8

4

6

IC

8

6

,

(A)

Ie

172

(A)

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BOX 54, BOX 54A, BOX 54B and BOX 54C are silicon epitaxial-base PNP transistors
in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic
package, intended for use in hammer drivers, audio amplifiers and other medium power
linear and switching applications.
The complementary NPN types are the BOX 53, BOX 53A, BOX 53B and BOX 53C
respectively.

ABSOLUTE MAXIMUM RATINGS
Vcso
V CEO

VESO
Ie
leM
Is

Ptot
T stg
Tj

BDX54 BDX54A BDX54B BDX54C

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase";;;;25°C
Storage temperature
Junction temperature

-45V
-45V

-60V
-60V

-80V
-80V

-100V
-100V

-5V
-8A
-12A
-0.2A
60W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c

r-------l
•

I
I

1

I

I

I

I

I

L_._.____ .~
S~'031JI

MECHANICAL DATA

R1Typ.l0kft

R2Typ.1S00

Dimensions in mm

173

6/77

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter
IcBO

IcEO

lEBO

max
max

=

Collector cutoff
current (lB = 0)

Min. Typ. Max. Unit

for
for
for
for

BDX54
BDX54A
BDX54B
BDX54C

VCB =
V CB =
VCB =
V CB =

-45V
-60V
-80V
-100V

-200
-200
-200
-200

for
for
for
for

BDX54
BDX54A
BDX54B
BDX54C

VCE =
VCE =
V CE =
VCE =

-22V
-30V
-40V
-50V

-500
-50U
-500
-500

!J.A

-2

mA

V EB = -5 V

Emitter cutoff
current (Ic = 0)

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Collector cutoff
current (IE = 0)

2.08
70

fJ.A
fJ.A

!J.A
!J.A
fJ.A.

!J.A
fJ.A

V CEO(sus) * Collector-emitter
sustaining voltage
(IB = 0)

Ic = -100 mA

VCE(sat) *

Collector-emitter
saturation voltage

Ic = -3A

IB

= -12mA

-2

V

VBE(sat) *

Base-emitter
saturation voltage

Ic = -3A

VCE"" -12mA

-2.5

V

hFE*

DC current gain

Ic = -3A

VCE = -3V

VF

Parallel-diode
forward voltage

IF = 3A
IF = SA

*

Pulsed: pulse duration

for
for
for
for

300 fJ.s. duty cycle
174

BDX54
BDX54A
BDX54B
BDX54C

-45
-60
-80
-100

V
V
V
V

-

750
1.8 2.5
2.5

1.5%

V
V

Safe operating areas

G-2622

-IC

(A)

I

I

I I I

I I I II"

I

PULSE OPERATION*
10IJs

IC MAX PULSED
10

I III II

Ie MAX CONTINUO US
~

\

·1UULI~

\

DC OPERATION

"\
*FOR SINGLE NON
REPETITIVE PULSE

BDX54

1ms

\

I'

~

BDX54
BDX54
BDX54

10-1
10

DC transconductance

DC current gain

r.....: 609

G 2606

-IC
(A)

I
VCE=-3V

7.5

-

VCE=-lV

10'

10'

/'

'"
2.5

10'
-Ie

(A)

3

175

-VBE

(V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage
0--2608

607

-~~~~~1-~-+~+-~~1-~-+1-~~

I

(V)

L5
hFE =2S0
le=-SA

-JA
-lA
-o.SA

0.5

2.5

7.5

3

-Ie (AI

Small signal current gain

-18 (mA)

Saturated switching characteristics

)
6-261011

hi.

hFE= 250
Vee =-30V
161=-162

10'

\

10'

-

I~~~~

If
Is

Ion

....

I'

10

8

10-'

I (MHz)

-Ie (A)

176

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BDX 54E, BDX 54F are silicon epitaxial base PNP transistors in monolithic
Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary N PN types are the BDX 53E and BDX 53F respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO

VCEO
V ESO
Ic
ICM

Is
P tot
T5t9

Tj

BDX54E BDX54F

Collector-base voltage (I E= 0)
Collector-emitter voltage (I s= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T ca5e:S:25°C
Storage temperature
Junction temperature

-140V
-160V
-140V
-160V
-5V
-SA
-12A
-0.2A
60W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c
,-------,
I

• I

I
I

I

.,.

I
I
I
I

L ______ ~
~-\037/1

R1Typ.l0kfl
R2Typ.150n

Dimensions in mm

MECHANICAL DATA
Collector connected to tab.

To-220

177

5/80

THERMAL DATA
Rth j-case
Rthj-amb

max
max

Thermal resistance junction-case
Thermal resistance junction-ambient

2.08 °C/W
70 °C/W

ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

ICEO

Collector cutoff
current (I S= 0)

for BDX54E
for BDX54F

V CE=-70V
V cr-8OV

-O.S
-O.S

mA
mA

Icso

Collector cutoff
current (I E= 0)

for BDX54E
for BDX54F

V cs=-140V
v cs==-160V

-0.2
-0.2

mA
mA

IESO

Emitter cutoff
cu.rrent (I E= 0)

V ES=-SV

-S

mA

V CEO (sus) *Collector-emitter
sustaining voltage
(Is = 0)

Ic =-SO mA
for BDX54E
for BDX54F

VCE (sat) * Collector-emitter
saturation voltage

I C =-2A

Is =-10mA

-2

V

VSE (sat) * Base-emitter
saturation voltage

I C =-2A

Is =-10mA

-2.S

V

Ic =-2A
Ic =-3A

V CE=-SV
V CE=-SV

hFE*

DC current gain

V F*

Parallel diode
forward voltage

IF = 2A

hIe

Small signal
currente gain

I C =-O.SA
f = 1 MHz

* Pulsed: pulse duration = 300

fJ,S,

-140
-160

SOO
1S0

-

-

-2.S

V CE=-2V

duty cycle = 1 %
178

V
V

20

V

-

G-3927/1

Safe operating areas

_IC

8

IC MAX

( A)6

"-

"-

1\ 100\
1 ~. ,us

1'\ 1mSi

--.--'

- 1

1

1 .11

~

DC OPERATION

I

...."l-• .j..-

-PULSE *
\'OPERATION
10AJS I

1\

*FOR SINGLE NON
REPETITIVE PULSE

I

II

I
4

6

DC current gain

8

10

DC transconductance
G-3929

G 3928

-IC

B
6

,

(A)

2

10 3

l/j;

r\' l\. licE

VCE =-2V
=-5V

B

1

6

C;;
/

17

VCE =-2V,

II

B

2

10

,

-IC

6 B

o

(A)

179

0,5

1,5

-VeE (V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage

-

G 3930

-VCE(sat )

G 393 1

II

-VCE(sat )

(V)

1,5

II

(V)

hFE=500
hFE =250
hFE = 50

I

/

.\-

j

----

l

//
V/

~

\

------ /

\.

----

"

.....

0,5

o

4

10- 2

4

6 8

4

6 8

10- 1

I

,

6 8

- IC (A)

68

Ie
3A
2A
, - IA
0,5 A
0,1 A

4

6

8

10-1

4

10

6 8

-I B (mA)

Saturated switching characteristics

Base-emitter saturation voltage

-

G-3932

G 393 3

t
)

(}JS)

Vee =-30V

8

,

hFE =250
lSI =-IB2
tf

hFE =250

2~ ~ i--'"
r----.
..........

8

..........

.... /

./

10- 1
6

10-1

ts
ton

6

, ,

8

10- 1

-Ie (A)

180

-Ie (A)

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTON
The BOX 54S is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration and is mounted in Jedec TO-39 metal case.
It is intended for use in medium power linear and switching applications.
The complementary N PN type is the BOX 53S.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
V EBO
Ic
ICM

IB
Ptot

-150
V
V
-150
-5
V
-6
A
-10
A
-0.2
A
15
W
1
W
-65 to 200°C
200
°C

Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case::;25°C
T amb::;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGRAM
r---,

i

I

~-+-~

RI Typ.lOkn
R2 '!yp. 150n

Dimensions in mm

MECHANICAL DATA

181

5/80

THERMAL DATA
Rth j-case
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

11.66 °C/W
17S °C/W

max
max

ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter
IC80

Collector cutoff
current (I E= 0)

Test conditions

Min. Typ. Max. Unit

V cs=-1S0V
T case= 12SoC
V cs=-1S0V

-0.2

mA

-2

mA

-0.2

mA

-S

mA

IcEO

Collector cutoff
current (18= 0)

V CE=-7SV

1,,80

Emitter cutoff
current (I C= 0)

V E8=-SV

V CEO (sus) *Collector-emitter
sustaining voltage
(18= 0)

I C =-SOmA

VCE(sat) * Collector-emitter
saturation voltage

I C =-2A

18 =-8mA

-2

V

V8E (sat) * Base-emitter
saturation voltage

I C =-2A

18 =-8mA

-2.S

V

hFE*

DC current gain

-1S0

Ic =-100mA V CE=-SV
V CE=-SV
Ic =-2A

V F*

Parallel diode
forward voltage

IF =-2A

hie

Small signal
currente gain

Ie =-O.SA
f= 1MHz

-

100
SOO

-

-2.S

V cr -2V

* Pulsed: pulse duration = 300 ~s, duty cycle = 1%
182

V

20

V

-

G-3919

Safe operating area

-Ie

PULSEOf' RATK)N*

IC MAX

(A)

,

r...

10 }.Is
l\:

100
}.Is

~

lms

\

~
DC OPERAT10N'"

~

1'0..

l'\;

I\"

\

i
-FOR SINGLE NON
REPETITIVE PULSE
10

I

-1

I

i

T ii

10- 2

6

I

8

G

10

DC current gain

B

2

-

6

~
102 150

-VeE

DC transconductance

-

G-3928

hFE

8

(V)

G 3929

8

-IC
(A)

-

2

i"\ !\.

1/1.10 3

VCE =-2V

VeE =-5V

6

la'

,

VeE =-2V \

/'17

II

6

,

,
10

1/

, 6'

1:1

, "
-Ie

o

(A)

183

0,5

1,5

-VeE (V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage
G- 3930

-VC£(sat )

G 3931

-YeSsat )

(V)

1,5

-tt

(V)

hFE=500
hFE =250
hFE = 50

-Ie'
3A
2A
IA
f - 0,5
A
~0,1 A

I
-\-

I

l

/

1//

~

\.
\.

-----

V/

.......

"

0,5

o

4

10-?

fi

,

B'

, 6'

68

10-'

-Ie

I

,

(A)

68

4

Base-emitter saturation voltage

4

68

10-1

10

68

-I B (mA)

Saturated switching characteristics

G-3932

)

G-3933

("s)

Vee =-30V

8

hFE _250
IBI =-IB
tf

hFE =250

'?>;:..........
......--

-

......

ts

ton ".

r--..

V

./

10-'
6

10- 1

8

6

,

8

10- 1

-Ie (A)

184

8

,

8

-Ie (A)

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary PNP types are the BDX 86, BDX 86A, BDX 86B and BDX 86C
respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEO

VEBO
Ic
ICM

IB
Ptot

Tstg
Tj

BDX85

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase<:;;25°C
Storage temperature
Junction temperature

45V
45V

BDX85A BDX85B BDX85C

60V
60V

80V
80V

100V
100V

5V
10A
15A
0.1A
100W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM

MECHANICAL DATA

Dimensions in mm

Collector con nected to case

185

10/82

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (T case
Parameter
IcBO

for BOX85 V CB =
for BOX85A V CB =
for BOX85B V CB =
for BOX85C V CB =
T case = 150°C
for BOX85 V CB =
for BOX85A V CB =
for BOX85B V CB =
for BOX85C V CB =

BOX85
BOX85A
BOX85B
BOX85C

ICEO

Collector cutoff
current (IB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (lc = 0)

V EB = 5 V

°C/W

25°C unless otherwise specified)

Test conditions

Collector cutoff
current (IE = 0)

1.75

VCE =
V CE =
V CE =
V CE =

Min. Typ. Max. Unit

45 V
60 V
SO V
100 V

500
500
500
500

[LA
[LA
[LA
[LA

45 V
60 V
SO V
100 V

5
5
5
5

mA
mA
mA
mA

22
30
40
50

1
1
1
1

mA
mA
mA
mA

2

mA

V
V
V
V

VCEO(sus) * Collector-emitter
sustaining voltage
(IB = 0)

Ic

V CE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

= 4A
= SA

IB
IB

= 16 mA
= 40 mA

2
4

V
V

VBE(Sat) *

Base-emitter
saturation voltage

Ic

= SA

IB

= SO mA

4

V

V BE *

Base-emitter voltage

Ic

=

VCE

= 3V

2.S

V

hFE *

DC current gain

Ic
Ic
Ic

= 3A
= 4A

Parallel-diode
forward voltage

IF
IF

= 3A
= 8A

2.5

V
V

Small signal
current gain

Ic
f

= 3A
V CE = 3V
= 1 MHz

10

-

VF

hie

*

Pulsed: pulse duration

=

=

100 mA
for
for
for
for

4A

SA

300 [Ls, duty cycle
186

BOX85
BOX85A
BOX85B
BOX85C

V CE = 3V
V CE = 3V
V CE = 4V

45
60
SO
100

1000
750
200

V
V
V
V

-

lS000

.1.8

1.5%

-

Safe operating areas
(for BDX85 and BDX85A)

G-2387

IC

* PULSE
OPERATION

11111

(A)

Ie MAX PULSED

I III

10

l00,us
lms

~

IC MAX CONTINUOUS

"'4 "-

/

1\

\

"

DC OPERATION

* FOR SINGLE NON REPETITIVE'
PULSE

5ms

BDX8
BDX8~A

10

Safe operating areas
(for BDX85B and BDX85C)

_G-13..88

IC
(A)

10

k

MAX PULSED

,

t-

*PULSE OPERATION

II

r\.

k MAX CONTINUOUS

l00,us
.-~

DC OPERATION- >-J

/

"'... '"

"r\ 1\

*FOR SINGLE NON REPETITM
PULSE

BDX85B

1
BDX85C

I
10

1
187

,
~

5ms

1\

I---

DC current gain

DC transconductance
G

-

4900

G 2368

'e
(A)

•

,
,

II

VC£"3V

,

J

6

VeE:3V
~.

I

10 4

•

,
6

•

4

V

,
,
6

,

10

-,
10

,
4

6'

V
4

6

•

4

10

68

o

'e(A)

1.5

Q.5

Collector-emitter saturation
voltage

Collector-emitter saturation
voltage

G

)

I
I
I--

- 4901

Ie:
A

I

ISA

hFE" 250

10A

--

~

-,

10

I
4

6

•

4

,

68

10

6

-,

•

10

'e(A)

188

10

10'

'B (mA)

Small signal current gain

Collector-base capacitance
G-

"B~1

CCBO
(pF)

"--

"'""l-

'=.
1o"II"~.

t--

,

\

10

468

-,

2

4

10

..

10

f (MHz)

10

Saturated switching characteristics
- 4

)

Power rating chart
G- 2395

"

Ptot

,

(W)

,
lf

.J"

2

V"

""'

I

, VCC:30V

+-

10n

100

IB1 = I~2
hFE=2 0

I'

"-

15

'" I"

50

-,

10

.,

10

.,

o

IC (A)

189

I'

50

100

"-

1'.

150

'"

Tease(·C)

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The BDX 86, BDX 86A, BDX 86B and BDX 86C are silicon epitaxial-base PNP power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary NPN types are the BDX 85, BDX 85A, BDX 85B and BDX 85C
respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO
V EBO

Ic
ICM

IB
Ptot
Tstg
Tj

BOX86

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tcase~25°C
Storage temperature
Junction temperature

-45V
-45V

BOX86A BOX86B BOX86C

-60V
-60V

-80V
-80V

-100V
-100V

-5V
-lOA
-15A
-O.lA
100W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM
c
r~-~~~--l

• Ii
I
I

I
I
I

'

R

I

L~_._, __,__ ~

MECHANICAL DATA

10/82

Rt Typ.l0kfl
R2Typ.150n

Dimensions in mm

190

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (Tease

Icso

Collector cutoff
current (IE = 0)

°C/W

25°C unless otherwise specified)
Min. Typ. Max. Unit

Test conditions

Parameter

1.75

for BDX86 Vcs=
for BDX86A V cs =
for BDX86B V cs =
forBDX86C Vcs=
Tease = 150°C
for BDX86 Vcs=
for BDX86A V cs =
for BDX86B V cs =
forBDX86C Vcs=

-45 V
-60 V
-SO V
-100V

-500
-500
-500
-500

-45 V
-60 V
-SO V
-100V

-5
-5
-5
-5

mA
mA
mA
mA

-22
-30
-40
-50

-1
-1
-1
-1

mA
mA
mA
mA

-2

mA

IcEO

Collector cutoff
current (Is = 0)

for
for
for
for

BDX86
BDX86A
BDX86B
BDX86C

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -5 V

VCE =
V CE =
V CE =
V CE =

V
V
V
V

[lA
[lA
[lA
[lA

VCEO(SUS) * Collector-emitter
sustaining voltage
(Is = 0)

Ic

= -100 mA
for
for
for
for

VCE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

= -4A
= -SA

Is
Is

= -16 mA
= -40 mA

-2
-4

V
V

VSE(sat) *

Base-emitter
saturation voltage

Ic

= -SA

Is

= -SO mA

-4

V

V SE *

Base-emitter voltage

Ic

= -4A

VCE = -3V

-2.S

V

hFE *

DC current gain

Ic
Ic
Ic

= -3A
= -4A
= -SA

VCE = -3V
V CE = -3V
V CE = -4V

Parallel-diode
forward voltage

IF
IF

= 3A
= SA

2.5

V
V

Small signal
current gain

Ic
f

= -3A
VCE = -3V
= 1 MHz

10

-

VF
hie

* Pulsed: pulse duration

300 [ls, duty cycle

191

BDX86
BDX86A
BDX86B
BDX86C

-45
-60
-SO
-100

1000
750
200

V
V
V
V

1S000
1.S

1.5%

-

Safe operating areas
(for BDX86B and BDX86C)

Safe operating areas
(for BDX86 and BDX86A)
r.-2389

-IC

I III

(Al

IC MAX PULSED

(Al
l00,.,s
Ims

i-\.'

IC MAX CONTINUOUS

10

G-2390

-IC

*PULSE
OPERATION

10

k

I IIII

*PULSE

MAX PULSED

1111PER ATION

r--..~

Ie MAX CONTINUOUS

I

T
l00,.,s

I DC OPERATlON-

DC OPERATION
*FOR SINGLE NON REPETITIVE\
PULSE

\1\

Sms

*FOR SINGLE N ON REPETITIVE
PULSE

Sms

BDX86B
BDX86 -I->

BDXB6C

BDX86A-r-

10-1
10

10

DC transconductance

DC current gain

-

G-2363

G 2369

-Ic

•

(Al

'l

_lV

Ii

8

.........

,/'

,/
VCE=-3V

10'

10 2

,

.

'\

6

..,
6

•

o

-IC(A)

192

as

Collector-emitter saturation
voltage

Collector-emitter saturation
voltage
G 2365

G 2367

4IcE(sat )

-VCE(sat )
(V)

(V)

hFE=2S0

I

II

-I =3A

-I =6

-I =10A

1\

'"

\.

o

o
-IC (A)

10

10

Small signal current gain

Base-emitter saturation voltage
G

-IS(mA)

4898

VBE(sat )
(V)

4
2

hFE= 250
10

•

·,=
·,
4-

\
VCE= 3V
I .SA

2

10'

-

_I-'

4

2

10

\

,•
4

,
-1

10

4

,

•

4

,.

4

10

4 ,.

,.

16 3

IC (Al

193

4

"

16'

2

468

f (MHz)

Collector-base capacitance

Saturated switching characteristics
G - 10838

G

I
(/,5 )

eeeo
(pF )

,
hFE= 250
Vee=-30V
leI = le2

4

r-- ......

2

10

"839

2

If

t--1"-

2

~

,
'"",
4

.......

......

"1on

2

,

10

.

,

10

.

1
6

Power rating chart

-

G 2395

Plol
(w)

100
!.......

r-...

i"'.
~

50

I'

" 1"- .....
l'-..
o

50

100

150

6

•

10

-Vea (V)

Tcase("C)

194

,

Ie (A)

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The BDX 87, BDX 87A, BDX 87B and BDX 87C are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary PNP types are the BDX 88, BDX 88A, BDX 88B and BDX 88C
respectively.

ABSOLUTE MAXIMUM RATINGS
VC80
VCEO
VE80
Ie
leM
18

Ptot
Tstg
Tj

BDX87 BDX87 A BDX87B BDX87C
45V
45V

Collector-base voltage (IE = 0)
Collector-emitter voltage (18 = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at T case':;; 25·C
Storage temperature
Junction temperature

60V
60V

80V
80V

100V
100V

5V
12A
18A
0.2A
120W
-65 to 200·C
200 ·C

INTERNAL SCHEMATIC DIAGRAM
,-------1
B

I

I

I
I

'

I
I

R

L ___ ._._._~

MECHANICAL DATA

S-103611

=~~~~~

E

Dimensions in mm

Collector connected to case
6 "'"

TO-3

195

10/82

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max

ELECTRICAL CHARACTERISTICS (Tease
Parameter
IcBO

°C/W

25°C unless otherwise specified)
Min. Typ. Max. Unit

Test conditions

Collector cutoff
current (IE = 0)

1.45

for BDX87 V CB
forBDX87A V CB
for BDX87B V CB
for BDX87C V CB
Tease = 150°C
for BDX87 V CB
for BDX87A V CB
for BDX87B V CB
for BDX87C V CB

=
=
=
=

45 V
60V
80 V
100 V

500
500
500
500

f1A
f1A
f1A
f1A

=
=
=
=

45 V
60 V
80 V
100 V

5
5
5
5

mA
mA
mA
mA

=
=
=
=

22
30
40
50

1
1
1
1

mA
mA
mA
mA

2

mA

ICEO

Collector cutoff
current (lB = 0)

for
for
for
for

BDX87
BDX87A
BDX87B
BDX87C

lEBO

Emitter cutoff
current (lc = 0)

V EB = 5V

VCE
VCE
V CE
V CE

V
V
V
V

V CEO(sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic = 100 mA

VCE(sat) *

Collector-emitter
saturation voltage

Ic = 6A
Ic = 12A

IB
IB

=24 mA
= 120 mA

2
3

V
V

VBE(sat) *

Base-emitter
saturation voltage

Ic = 12A

IB

= 120 mA

4

V

V BE *

Base-emitter voltage

Ic = 6A

VCE = 3V

2.8

V

hFE *

DC current gain

Ic = 5A
Ic = 6A
Ic = 12A

V CE = 3V
VCE = 3V
VCE = 3V

VF
hfe

for
for
for
for

BDX87
BDX87A
BDX87B
BDX87C

45
60
80
100

1000
750
100

V
V
V
V

-

18000

-

Parallel-diode
forward voltage

IF = 3A
IF = 8A

2.5

V
V

Small signal
current gain

Ic =5A
VCE = 3V
f = 1 MHz

25

-

* Pulsed: pulse duration

300 f1s, duty cycle

196

1.8

1.5%

II.

Safe operating areas
(for BDX87 and BDX87 A)

G-2383

IC
(A)

*PULSE
OPERATION

IC MAX PULSEDWl

,

Ie MAX CONTINUOUS

",

I"-

10

l00,..s
lms

~

"-

/
DC OPERATION

5ms

\

II

-FOR SINGLE NON REPETITIVE'
PULSE

~
BDX87-

----

BDX8iA

10

Safe operating areas
(for BDX87B and BDX87C)

-

l-

G 2385

IC
(A)

* PULSE OPERATION

IC MAX PULSEDWJj
IC MAX CONTINUOUS

I"

10

~

....
"

lms

""

DC OPERATION

~

!\ '
~\

- FOR SINGLE NON REPETITIVE
PULSE

BDX87B
BDX87C

10

197

l00fJs

5ms

DC transconductance

DC current gain

G 3766

I

IC
(A)

VCE =3V

±

12

I

v
/'/

. - ~-

--

I

'I

!,

----- -- ~

I

_.-

-~

II

II.

I

--

103B~~ma

I
II

~

-~

I

-.~-

e~

-

0.8

1.6

Collector-emitter saturation
voltage

Collector-emitter saturation
voltage

(,-3753

G 4871,

_..

II

VCE(sat)

,

IcH

(V)

,~~ r

Ih FE;250 !

11

- --

I~-

I

i I

III

' III:

I
4

6

i

I

!

I

I

IJ
,

I

,

, ,
I
I

I

I

I

I

!

,

l' /

lOA I
12A

I

I
I

I

I

I Ii
I

-

I

I

1111
I Iii

I

-

I

I!

~

-+

I

,

T

!

III

I

•

4

10-1

10- 1

198

68

10
,

4

68

T
,

68

IS (mAl

Base-emitter saturation voltage

Small signal current gain

G 4873

G 3768

'=-

VSE(sat )

IV)

-

6

,

,
,

l' 1;'-;'E;25

I

~

---

I
I

I

10- 1

;

'-r
I

--

>- -r

--

!il

I

II

:

10
!

t---

'1-- VCE.JV

,

nl-'

!

I

10' a

~

\

Ie .SA

~ t--rr,

i'

C'

i

'

I

I
I

'r---

--

I

,

"\.

6

.
I

---,

I

,

10'

7-

-

,

III11I

II111111
"

10

1

10-3

lelA)

I>

e
10-'

~

2

4

I> B

10-'

f

as
(MHz)

Saturated switching characteristics

Collector-base capacitance

G 4B76

G-4815

t
(,us)

CCBO

IpF )
6

I

I

,

,
-r10'

L

.....

,/

r--

~

IVCC~30V
~

IBI =lS2
hFE- 250

I

I

F Ft

ton

,

i

I

[

I

I

10

:i

tf

I

!

6

,0

10

199

,

'ciA)

EPITAXIAL-BASE PN P
POWER DARLINGTONS
The BDX 88, BDX 88A, BDX 88B and BDX 88C are silicon epitaxial-base PNP power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal
case. They are intended for use in power linear and switching applications.
The complementary NPN types are the BDX 87, BDX 87A, BDX 87B and BDX 87C
respectively.

ABSOLUTE MAXIMUM RATINGS
Vcso

VCEO
V EBO

Ie
leM
Is

Ptot
Tstg
Tj

BDX88 BDX88A BDX88B BDX88C

COllector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at Tease';;; 25°C
Storage temperature
Junction temperature

-45V
-45V

-60V
-60V

-80V
-80V

-100V
-100V

-5V
-12A
-18A
-0.2A
120W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM
c

r--------l

• i

I

i

I

L ______ .~ ~~~~~~

MECHANICAL DATA

10/82

5,103711

Dimensions in mm

200

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICBO

for BDX88 V CB =
for BDX88A V CB =
for BDX88B V CB =
for BDX88C V CB =
Tease = 1S0'C
for BDX88 V CB =
for BDX88A V CB =
for BDX88B V CB =
for BDX88C V CB =

BDX88
BDX88A
BDX88B
BDX88C

IcEO

Collector cutoff
current (IB = 0)

for
for
for
for

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -S V

VCEO(sust Collector-emitter
sustaining voltage
(IB = 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

VBE(Sat) *

Base-emitter
saturation voltage

V BE *
hFE *

VF

hIe

'C/W

2S'C unless otherwise specified)

Min. Typ. Max. Unit

Test conditions

Collector cutoff
current (IE = 0)

1.4S

V CE =
V CE =
V CE =
V CE =

-4S V
-60 V
-SO V
-100 V

-SOO
-SOO
-SOO
-SOO

[LA
[LA
[LA
[LA

-4S V
-60 V
-SO V
-100 V

-S
-S
-S
-S

mA
mA
mA
mA

-22
-30
-40
-SO

-1
-1
-1
-1

mA
mA
mA
mA

-2

mA

V
V
V
V

= -100 mA

for
for
for
for

BDX88
BDX88A
BDX88B
BDX88C

= -6A
= -12A

IB
IB

= -120 mA

-2
-3

V
V

Ic

= -12A

IB

=

-4

V

Base-emitter voltage

Ic

= -6A

VCE = -3V

-2.S

V

DC current gain

Ic
Ic
Ic

= -SA
= -6A

Parallel-diode
forward voltage

IF
IF

= 3A
= SA

Small signal
current gain

Ic
f

=-SA

* Pulsed: pulse duration

=

=

-24 mA

-120 mA

V CE = -3V
V CE = -3V
-12A V CE = -3V

201

1000
7S0
100

1S000

1.S

V CE = -3V

= 1 MHz

300 [Ls, duty cycle

V
V
V
V

-4S
-60
-SO
-100

1.S%

V

2.S

V

3S

-

Safe operating areas
(for BOX88 and BOX88A)

G-2384

-IC
(A)

IC MAX PULSED

*PULSE ~RATION

,

IC MAX CONTINUOUS
10

lOOjJs
lms

"- "
I

DC OPERATION

"
.J'
"-

*FOR SINGLE NON REPETITIVE
PULSE

5ms

,

\

,

\
BDX88- --t
BDX88A

I
10 2 -VCE(V)

10

Safe operating areas
(for BOX88B and BOX88C)

-Ie
(A)

IC MAX PULSED

","

*PULSE OPERATION

IC MAX CONTINUOUS
10

."
I

DC OPERATION

lms

"-

III

5ms

\

BDX88B
BDX88C

10

lOOps

"-

*FOR SINGLE NON REPETITIVE
PULSE

202

-

G 238611

\

~\

DC current gain

DC transconductance
-

G-3142

G ' ...

I

-IC
(A)

- ..

VCE =-3V

12

VCp3V

10'

•

I

I

_I"""
12S-C

,

,/

10'

I

I

1-

25"<: ':::=

•

II

4

r\-40'C

/

L
,

6

,

•

10-1

I

,.

1/

, 6'

o

10

Collector-emitter saturation
voltage

0.8

1.6

Collector-emitter saturation
voltage

-

G 4867

G 3739

VCE(sal )
-VCE(sat)

,

(V)

II

(V)

IC =-31

I

-,OA

-6A

I

-,2A

/
"FE=250

I

I

ii

I'

4

10-1

,

4

•

1

II ,.

,

,.

10

o

IC(A)

, 6,
10-'

203

4

6'

10

, 6'
-Ie (mA)

Small signal current gain

Base-emitter saturation voltage

-

G 374.1."

B

6

10 3

10'

1'\
B

,

6~

'f=
2)-10

,

..

,
1

..

VCE =-3V
IC= -SA

\

B

II

,"

, 6'
10

Collector-base capacitance

10- 1

.,

3743

,---- --

hFE=250
VCC =-30V

- --

1B1=IB2

.......

10'

a

~
Is
.......

• a

,

......

ton

• a
10

,"

f (MHz)

G ....

t
(psI'

a

(pF)

10

,

, .,

Saturated switching characteristics
G~

CCBO

Tease = 25'C

10

-VcB(V)

204

.

,

IC(A)

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS
The BOY 57 and BOY 58 are silicon multiepitaxial planar NPN transistors in
Jedec TO-3 metal case, intended for use in switching and linear applications
in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCSO

V CEO

VESO
Ic
Is

Ptot
T stg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at Tease ,,;25°C
Storage temperature
Junction temperature

BOY 57

BOY 58

120V
80V

160V
125V

10V
25A
6A
175W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGR~~

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-3

205

5/80

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

ICBo

Collector cutoff
current (IE = 0)

VCB = 120V

ICER

Collector cutoff
current

VCE = 80V
RBE = 100
Tease = 100°C

lEBO

Emitter cutoff
current (Ic = 0)

VEB =10V

Min. Typ. Max. Unit
1

mA

10

mA

0.5

mA

Ic = 100mA
for BOY 57
for BOY 58

80
125

V
V

V(BR) CBO * Collector-base
Ic = SmA
breakdown voltage for BOY 57
for BOY 58

120
160

V
V

10

V

VCEO (sus) *Collector-emitter
sustaining voltage

IE = SmA
V(BR) ESO * Emitter-base
breakdown voltage
(Ic = 0)
VCE sat *

Collector-emitter
saturation voltage

Ic = 10A

Is = 1A

0.5

1.4

V

VSE sat *

Base-emitter
saturation voltage

Ic = 10A

Is = 1A

1.4

2

V

206

ELECTRICAL CHARACTERISTICS (continued)
Parameter
hFE *

DC current gain

Test conditions

Min. Typ. Max. Unit

Ie = 10A
VeE
Ie = 20A
VeE
Tease = -30°C
Ie = 10A
VeE

= 4V
= 4V

20

= 4V

10

= 15V

7

fT

Transition
frequency

Ie = 1A
f = 10MHz

VeE

ton

Turn-on time

Ie

= 15A

IB1

toff

Turn-off time

Ie

= 15A IB1 = -IB2 = 1.5A

Clamped Es/b
Collector current

V(Clamp) = 125V
L = 500JLH

= 1.5A

* Pulsed: pulse duration = 300JLs, duty cycle ,,;::;2%.

207

60
15

15

-

MHz

1

JLS

2

JLs
A

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED TRANSISTORS
The BDY 90, BDY 91, BDY 92 are silicon multiepitaxial planar NPN transistors
in Jedec TO-3 metal case intended for use in switching and linear applications
in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEV
VCEO
VEBO
Ic
ICM

IB
P tot
T stg
Tj

BOY 90

Collector-base voltage {IE = 0)
Collector-emitter voltage (VBE = -1,5V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

BOY 92

100V
80V
100V
80V
80V
60V
6V
10A
15A
2A
60W
-65 to 175°C
175°C

DIAGR~~:

MECHANICAL DATA

5/80

120V
120V
100V

BOY 91

Dimensions in mm

208

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

2.5

DC/W

ELECTRICAL CHARACTERISTICS (Tease = 25 DC unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

Icso

Collector cutoff
cu rrent (IE = 0)

Vcs = Vcso max

1

rnA

ICEV

Collector cutoff
current
(VSE = -1.5V)

VCE = VCEV max
Tease = 150 DC
VCE = VCEV max

1

rnA

3

rnA

Emitter cutoff
current (Ic = 0)

VES = 6V

1

rnA

lEBO

VCEO (sus)·Collector-emitter
sustaining voltage
(Is = 0)
VCE (sat)

. Collector-emitter
saturation voltage

VSE (sat)
hFE

.

.

Ic = 100mA
for BOY 90
for BOY 91
for BOY 92

120
100
80

V
V
V

Is = 0.5A
Ic = 5A
Ic = 10A
Is = 1A
for BOY 90, BOY 91
for BOY 92

0.5

V

1.5
1

V
V

1.2
1.5

V
V

120

-

Base-emitter
saturation voltage

Ic = 5A
Ic = 10A

Is = 0.5A
Is = 1A

DC current gain

Ic = 1A
Ic = 5A
Ic = 10A

VCE = 2V
VCE = 5V
VCE = 5V

ft

Transition
frequency

Ic = 0.5A
f = 5MHz

VCE = 5V

ton

Turn-on time

Ic = 5A
Vcc = 30V

IS1 = 0.5A

ts

Storage time

IS1 =-ls2=0.5A

tf

Fall time

Ic = 5A
Vcc = 30V

• Pulsed: pulse duration = 300f.Ls, duty cycle :;::;2%.

209

35
30
20
70

MHz
0.35

f.Ls

1.3

f.Ls

0.2

f.Ls

EPITAXIAL PLANAR NPN
HIGH CURRENT, GENERAL PURPOSE TRANSISTOR
The BFX 34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case,
intended for high current applications.
Very low saturation voltage and high speed at high current levels make it ideal for power
drivers, power amplifiers, switching power supplies relay drivers, inverters.

ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Total power dissipation at T amb .;;; 25°C
Tease';;; 25°C
Storage temperature
Junction temperature

120
V
60
V
6
V
5
A
0.87
W
5
W
-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGR~~

MECHANICAL DATA

6/77

Dimensions in mm

210

THERMAL DATA
Rlh j-ease
Rlh j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

35
200

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min_ Typ. Max. Unit

ICES

Collector cutoff
current (VBE = 0)

VCE = 60V

0.02

10

I1A

lEBO

Emitter cutoff
current (lc = 0)

V EB = 4V

0.05

10

[LA

V(BR)CBO* Collector-base
breakdown voltage
(IE = 0)

Ic

= 5mA

120

V

V CEO (sust Collector-emitter
sustaining voltage
(lB = 0)

Ie

= 100mA

60

V

V EBO *

Emitter-base
voltage
(I c =0)

IE

= 1 mA

6

V

VCE(Salt

Collector-emitter
saturation voltage

Ie

= 5A

IB

= 0.5A

0.4

1

V

VBE (salt

Base-emitter
saturation voltage

Ie

= 5A

IB

= 0.5A

1.3

1.6

V

hFE *

DC current gain

Ie
Ie
Ic

= 1A
= 1.5A
= 2A

V eE = 2V
V CE = 0.6V
V CE = 2V

fT

Transition frequency

Ie
f

= 0.5 A V CE = 5V
= 20 MHz

C EBO
C eBo

Emitter-base
capacitance

VEB = 0.5V
Ie = 0
f . = 1 MHz

Collector-base
capacitance

IE
f

ton

Turn-on time

toff

Turn-off time

= 0
V eB = 10V
= 1 MHz

Vee= 20 V
Ie = 5A
IB1 = -IB2 = 0.5 A

* Pulsed: pulse duration = 300 I-'s, duty cycle = 1.5%

211

100
75
40 80 150
70

100

MHz

300 500
40

-

pF

100

pF

0.25 0.6

I-'s

0.6

I-'s

1.2

Safe operating areas

DC current gain
G 2509

G 2514

IC ,
(A) , 11(' MAX

IC MAX

10-'

200

amb =~·C

~
ISO

~~~~T~

OPERATION

50

i\

25·C

,

100

........

,

I IIIII
I IIIII

VCE =2V

1~

I"DC

I IIIII

PERMISSIBLE
EXTENSION OF
PULSED OPERATION

r"\

V

VCEO M A X 10- 2

,

.

,

10

.

,"

°

VCE (V)

, '8

4

"

10'

10

4

10'

Output characteristics

Output characteristics

-

G 2507

lOmA

....

IC
(A)

o.e

8mA

/

7mA

o.S

'/

SmA

0.4

'/
'/

0.2

°

j

0.6

2508

SmA

'II""
rt./
/

0.8

m

4mA

/

5mA

3mA
~

4mA

V/'....
~

2mA

13m'

o.S

Tamb =125"<:
IrnA

I

ImA

y

IB=O

0.4

~

0.2

"m'

~'
0.2

G-

BmAj /rnA

IC
(A)

9mA

//

£; 8

Ic (mA)

°

0.8 VCE (V)

212

IB=O

0.2

0.4

o.S

o.s

VCE (V)

Collector-emitter saturation voltage

Base-emitter saturation voltage

G 1510

G 2511

II

VBE(sal}

veE (sal }

(V)

(V) •

hFE"10
h FE=10

1.6

1.2

~

Tamb =12S'C

10-'

Tam

~

•

O.B

I-

,

l-- I---~

0.4

,
,

6

,

•

10- 1

10- 2

..

,

..

b=2:;Y V
~

f--

o

,

10-1

10- 2

Ie (A)

Small signal current gain

Emitter-base and collector-base
capacitances
G 2512

8

-

G 25U

e
(pF)

•

Ie (A)

8

, = 20MHz

""'"
........

0cE

i-

~ ......

r-..

~B

10'

=5V

T"'-...

... V
./
o

..

..

10

le(A}

213

,

..

1

•10

T"'"

,

..

VR (V)

EPITAXIAL PLANAR PN P
HIGH CURRENT, GENERAL PURPOSE TRANSISTOR
The BSS 44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is
used for high-current switching and power amplifier applications up to 5A.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO

V EBO

Ic
Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Total power dissipation at T amb .;;;; 25°C
Tease ';;;;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR

v
V

-6

V

-5
0.87
5
-65 to 200
200

A
W
W
°C
°C

:
4

MECHANICAL DATA

6/77

-65
-60

Dimensions in mm

214

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

35
200

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

Collector cutoff
current (VBE = 0)

Test conditions

Min. Typ. Max. Unit
-0.5

VCE = -60V

fLA

V(BR)CBO Collector-base
breakdown voltage
(IE = 0)

Ic

= -1 mA

-65

V

VCEO(SUS) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

= -50 mA

-60

V

= -1 mA

-6

V

V EBO•

Emitter-base
voltage
(Ic =0)

IE

VCE(sat)*

Collector-emitter
saturation voltage

Ic = -0.5A
Ic· = -5A

IB
IB

= -50mA
= -0.5A

-0.1
-0.4

-1

V
V

VBE(sat) *

Base-emitter
saturation voltage

Ic
Ic

= -0.5A
= -5A

IB
IB

= -50mA
= -0.5A

-0.8
-1.1 -1.6

V
V

hFE *

DC current gain

Ic
Ic
Ic

= -0.5A
= -2A
= -5A

V CE = -2V
V CE = -2V
V CE = -2V

fT

Transition frequency

Ic

= -0.5A

V CE = -5V

CCBO

Collector-base
capacitance

IE
f

= a
VCB = -10 V
= 1 MHz

tan

Turn-on time

toff

Turn-off time

Ic = -0.5A Vcc= -20V
IB1 = -IB2 = -50mA

* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
215

30
40

-

70
45
80

MHz
100

pF

0.065

fLs

0.45

fLs

Safe operating areas

DC current gain
G_2SS9

G-2S60

-Ie e

PULSE OPE RATIO

(A) 6 Ie MAX

"

/'
oe OPERATION

'\

,

100 ~

\

150

~

"
• FOR SINGLE NON
REPETiTIVE PULSE

,

6

,

100

"
,

,

68

10.

50

68

-IC (A)

-VeE (V)

Base-emitter saturation voltage

Collector-emitter saturation voltage

G-2557

G-2S s.

-IC
(A)

-VCE(sa
(V)

I

hFE =10

hFE=lO

I

0.5

/'
/

V

)

L....
0.5

-Ie (A)

216

Transition frequency

Collector-base capacitance

-

G 2553

fT

G-, 55 5

CCBO
(pF)

(MHz)

•
,

VCE =-5V

100

i"
50

/'

V

'""",

---

10'

..........

/'

........

,

10

Saturated switching characteristics

Power rating chart
6-2554

G-2556

Ptot
(W)

,•
r..........

,
10'

.

10

-IC (A)

I
(ns)

'"

~
~

'>
r-

I'

/Ion

I

s

If

r-..

i'
.......

2.5

"

VCC=-20V
hFE=10
Ip=10JJS

"'

181 =-182
10

-

1

50

217

100

150

!'....
Tcas~(OC)

EPITAXIAL PLANAR NPN
HIGH VOLTAGE SWITCH
The SSW 67 and SSW 68 are silicon epitaxial planar NPN transistors in Jedec TO-39
metal case. They are intend~d for high voltage inductive load switching applications.

ABSOLUTE MAXIMUM RATINGS
V C80
V CEO

Ic
ICM

Ptot

BSW 67 BSW 68

Collector-base voltage (IE = 0)
Collector-emitter voltage (18 = 0)
Collector current
Collector peak current
Total power dissipation at T amb"';; 45°C
Tease"';; 25°C
Tease"';; 1OO°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

:
4

MECHANICAL DATA

6/77

120V
120V

150V
150V
1.5A
2A
0.7W
5W
2.85W
-65 to 200°C
200 °C

Dimensions in mm

218

THERMAL DATA
Rth j-case
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (T case
Parameter

IcBO

V(BR)CBO

Collector cutoff
current (IE = 0)

Collector-base
breakdown voltage
(IE = 0)

max
max

Ic

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

for BSW 67
V CB = 60 V
V CB = 60 V
for BSW 68
V CB = 75 V
V CB = 75V

35
220

Min. Typ. Max. Unit

T case = 150°C

100
50

nA
flA

T case = 150°C

100
50

nA
flA

= 100 [LA
for BSW 67
for BSW 68

120
150

V
V

for BSW 67
for BSW 68

120
150

V
V

6

V

= 100 mA

V CEO (sust Collector-emitter
sustaining voltage
(IB = 0)

Ic

VEBO*

Emitter-base
voltage
(lc =0)

IE

= 100 [LA

V CE (sat) *

Collector-emitter
saturation voltage

Ic
Ic
Ic

= 0.1 A
= 0.5 A
= 1A

IB
IB
IB

= 0.01 A
= 0.05 A
= 0.15 A

0.15
0.5
1

V
V
V

VBE (sat) *

Base-emitter
voltage

Ic
Ic
Ic

= 0.1 A
= 0.5 A
= 1A

IB
IB
IB

= 0.01 A
= 0.05 A
= 0.15A

0.9
1.1
1.2

V
V
V

hFE*

DC current gain

Ic
Ic
Ic

= 0.1 A
= 0.5 A
= 1A

V CE = 5V
V CE = 5V
V CE = 5V

fT

Transition frequency

Ic

= 100mA V CE = 20 V

CCBO

Collector-base
capacitance

IE
f

V CB = 10 V
= 0
= 1 MHz

ton

Turn-on time

toft

Turn-off time

Ic = 0.5 A Vcc= 20 V
IB1 = -IB2 = 0.05 A

* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
219

-

40
30
15

MHz

80
35

pF

0.3

[Ls

1

[Ls

DC current gain

Safe operating areas

G 2452

G- 245 J1
I

Ie
(A)

--

8

6~
*

PULSE

OPERATION

Ie MAX

veE =5V

-"

I-- I-k
B

lms 1001's
I
1.1 '

III

r:='

- --I--

61-__ .

"

De OPERATION

10-

1

8

I

!i

II

j\

I

v

I

T

I

I

:

I I II

B

,

B

VeE

10'

10

1\

'\

\

,

--lBSW6SBSW67

II'

P

50

*FOR SINGLE NON
REPETITIVE PULSE

!
10- 2

100

o

68

Collector-emitter saturation voltage

,

8

10-2

(V)

'8

Ie (A)

10-'

Base-emitter saturation voltage

G 2450

G 2451

VCE(sat )

Ie

(V)

(A)

0.6

0.4

hFE

=10

hfE =10

J
0.2

V

I

/

7
I

j.....

o

,

10- 1

'8

,

'8

o

Ie (A)

220

0.5

veE (sat) ('I)

Collector-base capacitance

Transition frequency

-

G-2658

G 2454

'T

eeeo

(MHz)

(pF)

veE

=20V

60

100

40

"

,V

50

l\-

\

\

1\

IpO

\

\

./

20

..

o

.,

"i'

Ie (A)

, .,

,
la'

10

..

VeB (V)

Power rating chart

G 2189

,

~

,

10

Saturated switching characteristics
I
(".)

1\

G-2455

Piol
(W)

hFE=IO
Vee =20V
Ip =10".
181"-IB2

l"'-

_ _ I.
4

f'...

I"'-

./
~

~

""

"

Ion
If

••

......

"
• •

a

Ie (A)

221

50

lOa

"

150 Tcase('C)

EPITAXIAL PLANAR NPN
HIGH CURRENT,GENERAL PURPOSE TRANSISTOR
The BU 125 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
used in TV horizontal output and general purpose applications.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO

Ic
P tot

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (lc = 0)
Collector current
Total power dissipation at Tamb ,,;; 25°C
Tease ";;50'C
Storage temperature
Junction temperature

130

60
6
7
1
10
-65 to 200
200

v
V

V
A

W
W

'C
'C

INTERNAL SCHEMATIC DIAGR~4:

MECHANICAL DATA
,',

,','

,

Dimensions in mm

\,

.q()tI~rqr Cqnnllcted tqCflS~

'TQ-,39

6/77

222

THERMAL DATA
Rth j-case
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (T case
Parameter

IcBO

max
max

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Collector cutoff
current (IE = 0)

15
175

Min. Typ. Max. Unit

V CB = 100 V

0.02

10

!-LA

V(BR) CBO * Collector-base
breakdown voltage
(IE = 0)

Ic

= 1 mA

130

V

V(BR)CES* Collector-emitter
breakdown voltage
(VBE = 0)

Ic

= 1 mA

130

V

V CEO (sust Collector-emitter
sustaining voltage
(IB = 0)

Ic

= 50 mA

60

V

IE

= 1 mA

5

V

VCE(sat) * Collector-emitter
saturation voltage

Ic
Ic

= 1A
= 5A

IB
IB

= 0.1 A
= 0.5 A

VBE(satt

Base-emitter
saturation voltage

Ic
Ic

=1A
= 5A

IB
IB

= 0.1 A
= 0.5 A

hFE *

DC current gain

Ic
Ic

= 0.1 A
5A
=

V CE = 2 V
V CE = 2 V

40
15

fT

Transition frequency

Ic

= 0.5 A

V CE = 5V

50

CCBO

Collector-base
capacitance

IE
f

= 0
V CB = 10 V
= 1 MHz

80

pF

Turn-off time

Ic =5A
Vcc= 20 V
IBI = -IB2= 0.5 A

0.65

f1s

V EBO ...

toll

Em itter-base
voltage
(Ic =0)

* Pulsed: pulse duration

300 !-Ls, duty cycle

223

1.5%

0.9
1.3

0.25
1.2

V
V

1
1.6

V
V

-

155
60

MHz

DC current gain

Safe operating areas

o- 2576

G-2577

Ie •

(A)

PULSE

"irMA

PERATION

6

'Ims

J..-

"" '-:

DC OPERATION

150

I\,.
V

'\

i7
\

Vr" =2V

100

1\
·FOR SINGLE NON
REPETITIVE PULSE

50

..

,
10

o
IC

VeE (VI

Collector-emitter saturation voltage

(A)

Base-emitter saturation voltage

·2582

0-2581

Ie

(A)
hFE=10

"FE =10

8

6

II
4
0.5

V

/
1/

V

o
Ie

0.5

(A)

224

1.5 VBE (sa1) (V)

I

F
Collector-base capacitance

Transition frequency
G 2579

G-256B

eeBO

fT
MHz)

(pF)

VcE=5V

\

...... I--t-...
V
100

60

V
V

1/
50

V

/

"0

/
I--.
20

o
Ie

20

(A)

"0

60

VeB (V)

Power rating chart

Saturated switching characteristics

0-2578

t

Ptot

(ns) 8

(W)

""-!s

......

10'

"'"

"/"

10

L

If

--

""

Ion

" "-

Vee=20V
hFE=10

i

IB1 =-IB

,

10
Ie

-~

-

-- -

""
1'-...

.

50

(A)

225

100

150

Tease

"

(Oe)

EPITAXIAL PLANAR NPN
HIGH VOLTAGE POWER AMPLIFIER
The BU 125S is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
intended for general purpose, linear and switching applications.

ABSOLUTE MAXIMUM RATINGS
V CBO
V CEV

V CEO
V EBO

Ic
ICM

IB

Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = -1 .5V)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Base current
Total power dissipation at T amb ~ 25°C
Tease ~ 50°C
Storage temperature
Junction temperature

250
250
150
6
3
5
0.5
1
10
-65 to 200
200

V
V
V

V
A
A

A
W
W

°C
°C

INTERNAL SCHEMATIC DIAGR:~'

E

MECHANICAL DATA
.

Dimensions in mm

..

'. . Collector .cl?f:lnect!ld to: c~~e

TO-39

6/77

226

THERMAL DATA
Rth j-case
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (T case
Parameter

max
max

15
175

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

IcBO

Collector cutoff
current (IE = 0)

VCB = 200 V

lEBO

Emitter cutoff current
(lc = 0)

VEB = 6V

V CBO

Collector-base
voltage (IE = 0)

Ic

= 1mA

250

V

VCEO (sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

= 20 mA

150

V

VCE (sat)

Collector-emitter
saturation voltage

Ic

= 500mA

hFE

DC current gain

Ic
Ic

= 5 mA
VCE = 10V
= 250mA V CE = 3V

30
30

fT

Transition frequency

Ic

= 100mA V CE = 10V

15

CCBO

Collector-base
capacitance

IE
f

= 0

ton

Turn-on time

toll

Turn-off time

IB

fLA

1

mA

1.5

= 50mA

V

MHz

V CB = 20 V
35

= 1 MHz

Ic = 0.5 A
Vcc= 20 V
IB1 = -IB2 = 0.05 A

* PAJlsed: pulse duration = 300 fLs, duty cycle = 1.5%
227

10

pF

0.3

fLs

1

fLs

Safe operating areas

DC current gain
G 2459

G 2460

IC
(A)

• PULSE
OPERATION

B

6

IC MAX PULSED
IC

MAX CONTINUOUS

rq mv
Im5 100"5\

--

VCE =5V

-"

100

DC OPERAT IONV

* FOR

........

\

SINGLE NON
REPETITIVE PULSE

r-..

\

50

,
~

\
10-2

10'

10

o

, 6'

, 6'

B

10- 2

VCE (V)

Collector-emitter saturation voltage

, ,B

• 'B

• 'B

10"

IC (A)

Base-emitter saturation voltage

G - 24 57

G-2458

IC
(A)

VCE(5at )
(V)

0.6

I
II
II
hFE = 10

1
II

0.4
hFE =10

J

j
0.2

V

I
I

'- ~-

/

J....
B

....
•

10- 1

'B

os

IC (A)

228

J
VBE(sat) (V)

Collector-base capacitance

Transition frequency
G 2463

G-2461

ccao

fT
(MHz )

(pF)

80

60

~

60

f\

//

\

/

40

40

V

1\

\

\

\

IE·O

\

VCE .5V

20

'"'

20

..

o

10

~
,

8

8

IC (A)

10'

10

'8

Vca (V)

Power rating chart

Saturated switching characteristics
G

.....

259611

G - 2 4 62

t

Ptot

()JS) 8

(W)

h FE ·l0
Vcc .20V
Ip.lO)Js

15

Isf-IS2

--~

10

./

.......
~

Ion

.........

~

tf

to-I

10- 1

'"

..

a

IC (A)

229

50

100

150

~

Tcase (OC)

EPITAXIAL PLANAR NPN
HIGH VOLTAGE SWITCH
The BU 325 is a silicon planar epitaxial N PN transistor in Jedec TO-126 plastic case.
It is intended for high voltage, high current linear and switching applications.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEO
V EBO
Ic

IB

Ptot

llector-base voltage (I E = 0)
llector-emitter voltage (I B = 0)
Emitter-base voltage ( I c = 0)
llector current
Base current
Total power dissipation at T amb :0::25 DC
T case:O:: 25 DC
Storage temperature
Junction temperature

V

200
200
5

V

3

A

1
1.25
25
-65 to 150
150

V
A

W

W
DC
DC

INTERNAL SCHEMATIC DIAGR~:':

MECHANICAL DATA

Dimensions in mm

2.7"""

0.9"""

7.8"""

1.2

U58
TO-126 (SOT-'32)

5/80

230

THERMAL DATA
Rth j-case
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambo

max
max

5
100

°C/W
°C/W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

100

IlA

ICBO

Collector cutoff
current (I E=O)

V CB=200V

V CBO

Collector base
breakdown voltage
(IE=O)

Ic =1001lA

200

V

Ic =10mA

200

V

IE =1mA

5

V

VCEO (sus) *Collector-emitter
sustaining voltage
(IB = 0)
V EBO *

Emitter-base
voltage
(lc=O)

V CE (sat) * Collector-emitter
saturation voltage

Ic =150mA IB =15mA
Ic =500mA IB =50mA

0.06 1.0
0.10 1.5

V
V

V BE(sat) * Base-emitter
saturation voltage

Ic =150mA IB =15mA
Ic =500mA IB =50mA

0.73 1.0
0.80 1.2

V
V

h FE *

DC current gain

Ic =50mA V CE=5V
Ic =150mA V CE=5V
Ic =500mA V CE=5V

231

30
30
30

200
200
200

-

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

fT

Transition
frequency

Ie =500mA V eE=5V

CeBo

Collector-base
capacitance

'E =0
f =1 MHz

Ves=10V

ton

Turn-on time

Ie =0.5A
Vec=20V

I B1 =50mA

tott

Turn-off time

Ie =0.5A
I B1 =-1 B2 =SOmA
Vec=20V

* Pulsed: pulse duration

Min. Typ. Max. Unit

40

MHz

pF

50

0.3

I1S

1

I1S

= 300 I1S, duty cycle = 1.5%

G-3979

Safe operating areas

Ie

8
6

(A)

4

PULSE OPERATION"

Ie MAX

2

'\

8

,

10 )JS
100 fJs

~V

\

De OPERATION

6

\

4

\

\

FOR SINGLE NON
IREPETITIVE PULSE

\

2•

10

-1

1ms

s

,

6
·4

"2

10- 2

4

6 S

4

10

232

4

6 S

10

2

VeE

6 8

(V)

DC current gain

Collector-emitter saturation voltage
G- 2£.59

G

VCE(sal)
(V)

100

\

50

,

/
/

\

,

I

68

10-'

I

,

,

68

- 4'

G 2

68

,

6

,

II

68

Ie (A)

Transition frequency
•

G 2463

fT
(MHz )

80

-r- r-

II
hFE

/

10-'

Base-emitter saturation voltage

I
I

I

j....-f.'
Ie (A)

Ie
(A)

I

J
0.2

= 10

'"

60

j"
I

40

I
.1

V

V

\
1\

VeE =5V

20

J
./

o

0.5

o

6

8

10- 1

VBE(sat) (V)

233

I

I ·'1:

hFE _10

1\

68

I ,I!

I'

0.4

V

1', !

,

I'

,

I

0.6

veE _5V

o

2457

;

Ie (A)

Collector-emitter saturation voltage

Saturated switching characteristics

G-2461

CCBO

t

(pF)

(}JS)

G-2698/1

•
6

60

40

1\

'\

\

1\

t--- ~

1£=0

1\

hFE =10
Vec =20V
tp =10}JS
lSI =-I S2

~

20

"- r'-.r,

10

,
10

io-=-

..

f

.......... ...
,
10'

,.

10-1

G 3978

Ptot
(W)

30

I-

l\
1'\

r...

10

r-..
o

50

100

r...

r...
150

Use

"-~
,

.

Ie (A)

VCB (V)

Power rating chart

20

ton

(OC)

234

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The au 326 is a silicon multiepitaxial mesa NPN transistor in a Jedec T0-3 metal case particularly intended for switch-mode CTV supply system.

ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (V BE=O)
Collector-emitter voltage (I 8=0)
Base-emitter voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case $25 °C
Storage temperature
Junction temperature

800
375
10
6
8

3

V

V
V
A
A

A

75
W
-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGR~4

Dimensions in mm

MECHANICAL DATA

235

5/80

THERMAL DATA
Rth j-case

Thermal resistance junction-case

max

2.33

°C/W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter

ICES

IESO

Test conditions

Collector cutoff
current (V SE=O)

V cE=800V
V CE=800V

Emitter cutoff
current (I C= 0)

V Es=10V

Min. Typ. Max.

Unit

1
2

mA
mA

10

mA

T case=125°C

VCEO (sus) • Collector-emitter
sustaining voltage
(18 = 0)

Ic =100mA

VCE(sat) • Collector-emitter
saturation voltage

Ic =2.5A
Ic =4A

Is =0.5A
Is =1.25A

1.5
3

V
V

Base-emitter
saturation voltage

Ic =2.5A
Ic =4A

Is =0.5A
Is =1.25A

1.4
1.6

V
V

DC current gain

Ic =1A

V CE=5V

ton

Turn-on time

Ic =2.5A
V cc=250V

I S1 =0.5A

0.5

~s

ts

Storage time

Ic =2.5A
I S2 =-1A

I S1 =0.5A
V cc=250V

3.5

~s

Ic =2.5A
I B2 =-1A

I S1 =0.5A
V cc=250V

0.5

~s

VSE(sat)

h FE

tf

•

•

Fall time

325

• Pulsed: pulse duration =300 ~s, duty cycle =1.5%

236

V

25

-

G-4071

Safe operating areas

2

Ic

1.! Ulllll
Icw.x FU.SED

(A)
6
4

:J.~

.1.

1)\15

I,.MAX CONT.
1111

lIIo..

II

I~

1\

8
6
4

.,

Fm SINGLE I'0Il
REPElTTlVE PJl Sf.

~

2•

10-1

I-

Area of permissible
operation during
turn-on provided R BE
:::; 1000 and tp :::; 0.6

I~
Dna

DC OPERAroN

2

lint

B
6

I

•
2

10-2
B
6
4

IlS

11- Area of permissible
operation with V BE :::;
o and tp :::;2 IlS

2

3
2

• 68

2

10

Derating curves

f - e--

f"'III ~
t-..;: r-...~(IAtI~
...... "

D

1'-..

0.5

!'-...

I. . . . (}s~-"I

..... jo..,.

,.....~4I.-f- ~
N'r~ -I-

~

,.;;;:

a

50

6 8

2

68

2

4 6.

375 100 101

Thermal transient response
G 3665

i'

•

laO

150

Tcase ('C)

237

DC current gain

Collector-emitter saturation voltage

-

G 345'<

G- 34 52
t)

8

-

6

f-

Tease= 125°C

4

....-

2

hFE=5

VCE =5V

i25"C

~

i

I'-.... ~

-30'C

J..--10

----------

_.--

8

--

,--

6

,

-

0.5

-

Tease= 1252

~ 25'C

rill

I

~-30'C

6

8

6

,

8

10-1

o

6

6

8

8

IC (A)

IC(A)

Collector-emitter saturation voltage
G-3453

iCE(sat )

Base-emitter saturation voltage

-

G 3457

VBE(sat )
(V)

(V)

hFE =5

IC =4A

I:/:~

3A

11

2A

Tease

~ V"...

=~30D

V/
......

25'~1125'C

0.5
IA

,-;

o
o

"

VI

III

0.5

1.5

Ie (A)

• • 10-

1

238

6

8

rJ

Saturated switching characteristics

Saturated switching characteristics

-

G 3455

,
Is
B

6

---

I,

ton

-'

I

Tease= 25-C

I

~---~

---

G 3802

~s

........

"-

r-...

/

--

4

'r- r- 1-1-

Vee = 2SOV
hFE =5
IB2 =-2IBI

.........

I,

.,/

;....-

,

Ion

Vee = 250V
hFE =5
162 =-2IBI
Tcase=12S·C

B

6

0.5

Ie (A)

239

./

----

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BU 326A is a silicon multiepitaxial mesa N PN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system.

ABSOLUTE MAXIMUM RATINGS
V CES

VCEO
VEBO
Ic
ICM

IB

Ptot
Tstg
Tj

Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I c=O)
Collector current
Collector peak current
Base current
Total power dissipation at T case::;25°C
Storage temperature
Junction temperature

900
400
10
6
8
3

75
-65 to 200
200

V
V
V
A
A
A
W
°C
°C

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

Dimensions in mm

.»1'0-3

5/80

240

THERMAL DATA
~h j-case

max

Thermal resistance junction-case

2.33

°C/W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter

ICES

lEBO

Test conditions

Collector cutoff
current (V BE=O)

V CE=900V
V CE=900V

Emitter cutoff
current (I C= 0)

V EB= 10V

Min. Typ. Max.

Unit

1
2

mA

10

mA

T case=125°C

mA

I

V CEO (sus) ·Collector-emitter
sustaining voltage
(I B = 0)

•

Ic =100mA

400

V

Collector-emitter
saturation voltage

Ic =2.5A
Ic =4A

IB =0.5A
IB =1.25A

1.5
3

V
V

V BE(sat) • Base-emitter
saturation voltage

Ic =2.5A
Ic =4A

IB =0.5A
IB =1.25A

1.4
1.6

V
V

h FE •

DC current gain

Ic =1A

V CE=5V

ton

Turn-on time

Ic =2.5A
Vcc=250V

I B1 =0.5A

Ic =2.5A
I B2 =-1A
Ic =2.5A
I B2 =-1 A

VCE(sat)

ts

tf

Storage time

Fall time

-

0.5

~s

I B1 =0.5A
V cc=250V

3.5

~s

I B1 =0.5A
V cc=250V

0.5

~s

• Pulsed: pulse duration =300 ~s. duty cycle =1.5%

241

25

Safe operating areas

I-

Area of permissible
operation
during
turn - on provided
RBE =100n and tp:O;

0.6 IlS
11- Area of permissible
operation with V BE :0;
o and tp:O;: 21ls

Thermal transient response

Derating curves
G 3665

G-3668

~

-~

I .~.

j
-1

i""t: ~
I

""~(""
l ' t'....?f'D
~

1'-,

0.5

10-1 b&~

f- f---

'

b"O;~S

......

<'l-s"'oq .............

K1:i,y

~
~fI'f'D
f---

~

-t-

"'-(-

I'-,

o

50

100

150

Tease ('C)

242

'

DC current gain

Collector-emitter saturation voltage
G- 3454

G - 3452

VCE(s.1)

8

I-~

~~

(V )

r---- --

+---

-

6
4

Tease =125°C

....

hFE,5

VCE ~5V

25'C

r-2

~

,

-........ ~

-30'C

f.--

.

:

10

--- I--

8
6

--

0.5

J.

4

~

I

Tease= 1250

II

i

2

6

I

1//

~ 25'C

~-30'C

6

8

o

,

6

6

8

II

8

1
IC (A)

Base-emitter saturation voltage

Collector-emitter saturation voltage

-

G 3453

VCE(sat )

I
I

VSE(sat )
(V)

(V)

I

,

, hFE =5

I

IC

I

I

~4A

3A

I

2A

Tease

I

L,~

1

=_30

\

...........:: V/

0

,....,../

..-

.... -

"

125'J-._
,

1125'C

1\

Q5

i

IA

I,

I

1\

o

I

I

t-

o
0.5

1.5

Ie (A)

243

6

,

G- 3457

II

I

I
I

I

I
6

8

rI

Saturated switching characteristics

Saturated switching characteristics

-

G 345 5

2

Is---'

_-=-=.c..=

--

B

(jJ"

I
2

.............

-

"
/

2

--

-r-

10-1

If
Ion

--

---

I

Vee· 250V
hFE .5
IB2' -21Bl
Tease= 25-C

./

V

2

V

-

10-'

0.5

Ie (AI

244

G 3802

,,-Is

........

-If

Ion

Vee. 250V
hFE =5
182 =-2IBl
Tc ase=125·C

'"

./

--

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BU 326S is a silicon multiepitaxial NPN transistor in Jedec TO-3 metal case, particularly intended for switch-mode CTV applications.

ABSOLUTE MAXIMUM RATINGS
V CES
VCEO
VEBO
Ic
leM
Is
Ptot
Tstg
Tj

Collector-emitter voltage (V SE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~ 75°C
Storage temperature
Junction temperature

V

800
400
7
6
8
3
60
-65 to 175
175

V
V
A
A
A

W
°C
°C

INTERNAL SCHEMATIC DIAGR~~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-3

245

5/80

THERMAL DATA
Rlh j-ease

ELECTRICAL CHARACTERISTICS (Tease
Parameter

ICES
lEBO

max

Thermal resistance junction-case

V CE = BOO V
V CE = BOO V

Emitter cutoff
current (lc = 0)

V EB = 7V

°C/W

25°C unless otherwise specified)

Test conditions

Collector cutoff
current (V8E = 0)

1.67

Min. Typ. Max. Unit

Tease = 150°C

1
3

mA
mA

1

mA
V

V CEO (sust Collector-emitter
sustaining voltage
(18 = 0)

Ic

= 100mA

VCE (sal) *

Collector-emitter
saturation voltage

Ic
Ic

= 2.5A
= 4A

18
18

= 0.5A
= 1.25A

1.5
3

V
V

V8E (sal) *

Base-emitter
saturation voitage

Ic
Ic

= 2.5A
= 4A

18
18

= 0.5A
= 1.25A

1.4
1.B

V
V

hFE *

DC current gain

Ic

=4A

V CE = 5V

fr

Transition frequency

Ic

= 0.5A

V CE = 10V

ton

Turn-on time

Ic = 2.5A
181 = 0.5A

Vcc= 250V

Ic = 2.5A
181 = 0.5A

Vcc= 250V
182 = -1A

ts

Storage time

tf

Fall time

400

* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
246

3.5

10

-

20

MHz

0.3

[Ls

1.B

[Ls

0.3

!tS

DC current gain

Safe operating areas

-

6-2551

.. PULSE OPERATION

Ie MAX PULSED

10

Ie MAX
eONTIN 0

I

'"

/'

10
10

De OPERATION

.

G 2S 9

Ie
(A)

--

............

i'.
VeE=5V

1\

lm~

l'...

lOms

• FOR SINGLE NON
REPETITIVE PULSE

Tcase=75°C

I

II IIII
4

4

••

••

10

4

10'

6

••

• (A)
•

,

'icE (V)

Ie

Collector-emitter saturation
voltage

Collector-emitter saturation
voltage
G-2~3711

6-2541

.Et..,

I

(V)

hFE=5

3

IIC=4A

3A
2A

2

lA
0.5

~

1\

1

/
./

o
10-"'

o

Ie (A)

247

0.5

.5

Ie (A)

Small signal current gain

Base-emitter saturation voltage
G-254S

-

45

t)

hFE=S

l.-'
./

IC·o.SA

\

./
10

VCp5V

0.5

.
4

IC

(A)

4

••

10'"

,.

1\ , ..

10

1

.f (MHz)

Saturated switching characteristics

Collector-base capacitance

G 2705/1

G-2S4Io

I

CCBO a

(JJs)

(pF)

VCC=2S0V
hFE=S

-

IS 2 =-2I

s,

It;-.....,

~ ............ I

10'

- -/

If

10

r--...L

""
•10

4

,

•

Ion

I
4

10'

- 'V

I

Ves

,

•

Ei

(V)

7

8

5

9

IC

248

r-.....
(A)

EPITAXIAL PLANAR NPN
HORIZONTAL TV DEFLECTORS
The BU 406, BU 406H and BU 408 are silicon epitaxial planar NPN transistors in Jedec
TO-220 plastic package. They are fast switching, high voltage devices for use in
horizontal deflection output stages of large screen MTV receivers with 110° CRT.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEV
V CEO

VEBO
Ic
ICM
ICM

IB
Ptot
Tstg

Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = -1.5V)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Collector peak current (t = 10 ms)
Base current
Total power dissipation at T case";;; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

400
V
400
V
200
V
6
V
7
A
10
A
15
A
4
A
60
W
-65 to 150°C
150
°C

DlAGR~~_~r

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.

249

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

2.0S
70

"C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

Collector cutoff
current (VSE = 0)

Test conditions
VCE = 400 V
VCE = 250 V
VCE = 250 V

lEBO

Emitter cutoff
current (lc = 0)

V EB = 6 V

VCE (sat) *

Collector-emitter
saturation voltage

for
Ic
for
Ic
for
Ic

BU406
=5A
BU406H
=5A
BU408
=6A

for
Ic
for
Ic
for
Ic

BU406
=5A
BU406H
=5A
BU408
= 6A

VSE (sat) *

Base-emitter
saturation voltage

fT

Transition frequency

Ic

= 0.5 A

toff **

Turn-off time

for
Ic
for
Ic
for
Ic

BU406
= 5A
BU406H
=5A
BU408
= 6A

ISlb

*

**

Second breakdown
collector current

VCE =' 40 V

Pulsed: pulse duration = 300 [Ls, duty cycle
See test circuit
250

Min. Typ. Max. Unit

Tease = 150°C

5
100
1

mA
[LA
mA

1

mA

Is

= 0.5 A

1

V

Is

= O.S A

1

V

Is

= 1.2 A

1

V

Is

= 0.5 A

1.2

V

Is

= O.S A

1.2

V

Is

= 1.2 A

1.5

V

V CE = 10 V

10

MHz

Is end = 0.5A

0.75

[Ls

Is end = O.SA

0.4

[Ls

Is end = 1.2A

0.4

[Ls

t

1.5%

= 10ms

4

A

Collector-emitter saturation voltage

DC current gain
G 2653

hFE;IO

VCE ;5V

r---

po-

G 2651

-

VCE(sat)
(V) ,

,

r-....

,

10,

~ t"-,

Tease ;125'C./

10

-

I--

e.--

f--.J--

25'C

i
6

"

6

10-'

IC(A)

"

6

8

IC (A)

I

Collector cutoff current

Base-emitter saturation voltage

G 1365/2

G 2652

VSE(sal )

ICES"

6

(V)

(nA),

,

-

Tease

0.5

VCE;300V

hFE _I

1.5

10'

--

....-

=25°C

10'

"

·",
··
,
-

.......-IllO-C

-

./
,/

,

,

,

6

,

,

,

6

10

,

25

IC (A)

251

50

75

+- "7
./

Storage time

Fall time
G 1366

G 1367
8

8

)

0

,

,

See test -0circuit

,

··

,

.

*MAX.
TYR
*MIN.

-

0

,
,

,

,

f--

0

,

,

,
,

10-

Turn-off time
G 1368

£

s ••

test circuit

*MAX.

*

TYR

--

-

I

C-

·

0-'

o

,

'" 90'1. CONFIDENCE
[

0-'
25

50

[

2

25

75

50

* '" 90%

,

*",90'" CONFITT

25

eU 5)

TYP.
*MIN.

.

·
0

8

*MAX.

10- 1

10-1

toff

See- test circuit

75

252

50

75

CONFI DENCE

SWITCHING TIMES
Test circuit (fall, storage and turn-off time)

1

+32V

TO SCOPE

(chann<"l

non

L5nF

1
kfl

100
kfl

15nF
15
kfl

5-0855/3

II Horizontal hold

t

COi!:~\~: ~~;:~~~~~~~!¢ 0o~~; ::~'.~~! ~~nx: ~:~2 ~~

Core= siferrit B 62120 25X4'1(2

L2 Horizontal yoke=200 J-lH
T1 Driver transformer: Pins 1-2=125 turns ~ 0.2 rrm;
Pins 3-4=25 turnsIllO.4mm; Gap =O.12mm; Core=3E3doubleE19x15)C5
T2 EHT transformer manufacturer AReO type 249.065f035
R ".330(1 for BU406
R·" 2200 tor BU406H
R lBon fot a040B

=

Waveforms
Fall and storage time

Turn-off time

Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its ftyback excursion
5-0857

253

APPLICATION INFORMATION
BU 406 - application circuit for 17" to 24" - 110° - 28 mm neck picture tubes
;:r----~I

EH?

II~
r------",I
II
+32V

220

n

33nF

AUXILIARY
TURNS

180----+11:::.
T2(5th harmonic)

5-2295/2

*Nl=125 turns ~ O.3nm; N2=25 turns ~ O.6nm; GAP=O.12rrm i CORE=OOUBLE E 19x5xB mm;FERRITE JEt TYPE

254

EPITAXIAL PLANAR NPN
HORIZONTAL TV DEFLECTORS
The BU 4060, BU 4070 and BU 4080 are silicon planar epitaxial NPN transistors with
integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, high
voltage devices for use in horizontal deflection output stages of MTV receivers with
110° CRT.
The BU 4060 and BU 4080 are primarily intended for large screen, while the BU 4070 is
for medium and small screens.

BU406D BU407D BU408D

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEV

VEBO
Ic
ICM
ICM

IB

Ptot
T stg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -1.5V)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (repetitive)
Collector peak current (t = 10 ms)
Base current
Total power dissipation at Tease";; 25°C
Storage temperature
Junction temperature

400V
400V

330V
400V
330V
400V
6V
7A
10A
15A
4A
60W
-65 to 150°C
150 °C

INTERNAL SCHEMATIC DIAGRAM

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.
10.4~

255

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

2.08
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
IcEv

Collector cutoff
current (VSE = -1.SV)

Test conditions
for BU406D and BU408D
VCE = 400 V
for BU407D
V CE = 330 V

IEsO

Emitter cutoff
current (lc = 0)

VEB = 6 V

VCE (sat) *

Collector-emitter
saturation voltage

for
Ic
for
Ic

BU406D and BU407D
=5A
Is = 0.65A
BU408D
= 6A
Is = 1.2 A

for
Ic
for
Ic

BU406D and BU407D
= SA
Is = 0.65A
BU408D
= 6A
Is = 1.2 A

VSE (sat) *

Base-emitter
saturation voltage

fT

Transition frequency

Ic

toll

Turn-off time

for
Ic
for
Ic

ISlb

Second breakdown
collector current

VF

Diode forward voltage IF

*

Min. Typ. Max. Unit

= O.S A

V CE = 10 V

t

= 10 ms

= 5A

Pulsed: pulse duration = 300 iJ.s, duty cyple
256

rnA

15

rnA

400

rnA

1

V

1

V

1.3

V

1.5

V

10

MHz

BU406D and BU407D
= SA
Is end = 0.6SA
BU408D
=6A
Is end = 1.2A

V CE = 40 V

15

0.75

iJ.s

0.5

iJ.s

4

A
1.S

1.S%

V

Collector-emitter saturation voltage

DC current gain
G-191811

T
VeE

G 2770

VCE(sa\j
(mV) ,

=IV

hFE =10
20

.....

" .....

10

lCase· 125'C
= 25'C

I-i'"

, ,
10'

,""- VI

/'~

-

10'

~

, ,

,

.

IC (mA)

Ie(mA)

10'

Forward voltage

Base-emitter saturation voltage

G 2656

G 1921ft

VSE(sat )
(mV)

hFE =10
1600

1.5

-

1200

-

800

.....
Q5

400

, ,
10'

10'

o

,

B

IC (A)

'C(mA)

257

SWITCHING TIMES
Test circuit (fall, storage and turn-off time)
SYNC.
INPUT

+32V

LF

TO SCOPE

(channE'1

nOll

150
fi

1.5nF

1
kfi

100
kfi

15nF

8.2
kfi

5-2291/1

L 1 Horizontal hold

t

COil:::~: 1~~~~~~~:~!~ 00~~; ::~·.~~i ~~~ ~ ~:~2 ~~

Core= siferri t B 62120 25>'1,)(2

L2 Horizontal yoke:200 flH
T1 Or'iver transformer: Pins 1-2=125 turns !Ii 0.2 mn;
Pins 3-4=25 lurnsl!l O.4rrrn; Gap =O.12mm; C.ore",3E3doubleE 19x15)(5

T2 EHT transformer manufacturer ARea type 249.065/035
R = 270.n for BU406D and SU 4070
R lao n for BU 4080

=

Waveforms
Fall and storage time

Turn-off time

-----c.----Q

Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its flyback excursion
5-0857

258

APPLICATION INFORMATION
Two examples are given of the BU 4060 and BU 4070 in conventional MTV horizontal
deflection circuits,
BU 4060 - application circuit for 17" to 24" - 110° - 28 mm neck picture tubes

::b·IEH~

II

,-------4
II
II
+32V

AUXILIARY
TURNS

T2(Sth harmonic)

5-1645/2

*Nl=125 turns

¢ O.3mn;

N2=:25 turns ~ O.6rrm; GAP= 0.12 nm ; CORE=DOUBLE E 19x5xBmm;FERRITE 3El TYPE

BU 4070 - application circuit for 12" to 17" - 110° - 20 mm neck picture tubes
(driver supply voltage = 10,8 V)

::t*-'.I EH~
"~

,------""

"

.1O.8V

AUXILIARY
TURNS

'e

*Nl= 90 (urns

¢ O.3rrm;

N2=30 turns

¢ O.6rrm;

+lO.BV
GAP=0.12rrm; CORE=DOUBLE E 19x5x8 mm;FERRITE JElTYPE

259

APPLICATION INFORMATION (continued)
BU 407D - application circuit for 12" to 17" - 110' - 20 mm neck picture tubes
(driver supply voltage = 25 V)
lr----~ EH~
II~

cc------llII
II
+Z5V

270
11
22 nF

AUXiliARY
TURNS

'8

't10.BV

5-2296/1

*Nl=125 turns ~ O.3rrrn; N2=25 turns ~ O.61TTT\; GAP= 0.12 nm i CORE=DOUBLE E 19x5xS mm;FERRITE JE1TVPE

260

EPITAXIAL PLANAR NPN
HORIZONTAL TV DEFLECTORS
The BU 407 and BU 407H are silicon epitaxial planar NPN transistors in Jedec TO-220
plastic package.
They are fast switching, high voltage devices for use in horizontal deflection output
stages of medium and small screens MTV receivers with 110° CRT.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEV
VCEO
V EBO

Ic
ICM
ICM

IB

Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = -1.5V)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Collector peak current (t = 10 ms)
Base current
Total power dissipation at Tease::::; 25°C
Storage temperature
Junction temperature

330
V
330
V
150
V
6
V
7
A
10
A
15
A
4
A
60
W
-65 to 150°C
150
°C

INTERNAL SCHEMATIC DlAGR~4:

MECHANICAL DATA

Dimensions in mm

COtlectorCQnnectedto tab.

261

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

2.0S
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

Collector cutoff
current (VBE = 0)

Test conditions
VeE = 330V
VeE = 200V
VeE = 200V

Min. Typ. Max. Unit

Tease = 150°C

5
100
1

mA
[LA
mA

1

mA

lEBO

Emitter cutoff
current (Ie = 0)

VEB = 6 V

VeE (sat) *

Collector-emitter
saturation voltage

for
Ie
for
Ie

BU407
=5A
BU407H
=5A

IB

= 0.5A

1 • V

IB

= O.SA

1

V

for
Ie
for
Ie

BU407
=5A
BU407H
= 5A

IB

= 0.5A

1.2

V

IB

= O.SA

1.2

V

VBE (sat) *

Base-emitter
saturation voltage

fT

Transition frequency

Ie

= 0.5 A

tOil **

Turn-off time

for
Ie
for
Ie

BU407
=5A
BU407H
=5A

ISlb

Second breakdown
collector current

VeE = 40 V

VeE = 10 V 10
IB end = 0.5A

0.75

[Ls

IB end = O.SA

0.4

[Ls

t = 10ms

* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
** See test circuit
262

MHz

4

A

DC current gain

Collector-emitter saturation voltage
2653

Go

G 2651

VCE(sat)
(V)

,
4

hFE=IO

VCE =5V

r--..

F2

,

10 ,

l'~I'-

1----1Tease =125'Cy

10
8

,
4

.-?

...-

,,

25'C

~

4

2

2

i
, ,
10- 1

10-'

Base-emitter saturation voltage

Collector cutoff current

G 2652

I

VBE(sat)

, ,
IC (A)

1

ICES

(V )

(nA)

,

G 2763

,

4

2

VCE =2 50V

hFE =10

1.5

10'

,,
,

,
10' ,
,

.,-

,

-I--"'
Tease - 25°C

0.5

V

~

--i--

10'

125"C

,
,
,

17

V

,

,
o

,

8

,

10

8

IC (A)

25

263

50

75

..... V

Storage time

Fall time
G 1367

,

·

)

,

G 1366

,
,

See test circuit

,

,
*MAX.
TYP.
*MIN.

,

,

·,

,

,

·

,

·
B

I-

,
10- ,

,

*"'90"!.CONF'TT

25

50

75

G 1368
B

·,

See test circuit

I

,

!
B

*MAX.

*

·,

TYP.

-II

,
O·

+=

,
O· ,

"\. 90 °/0 CONFIDENCE

25

50

• '" 90"!. CONFIDENCE

25

Turn-off time

B

TYP.
'MIN.

,

,

,

*MAX.

·

B

·,

See test circuit

75

264

50

75

SWITCHING TIMES
Test circuit (fall, storage and turn-off time)

"L

TO SCOPE

I
kll

100

10

kll

kll

(chann('i n"1l

lOa

r

kll

,,,

15nF

680

8.2

n

kll

33

n

470
II

IZOO

:,uH

O.22,uF

1
l1

Horizontal hold

5-2291/2

COil:~\~:~~;:~;~~~~~:¢OO~2~; ::~.~~:~~~nx~~·.~z~~

Core:siterrit

66212025)(4)(2

L2 Horizontal yoke=200,uH
T1 Driver transformer: Pins 1-2"'125 turns ~ 0.2 nm;
Pins 3-4=25 turns~O.4mn; Gap =O.12rrm; Core=3E3doubleE19l'.15x5
T2 EHT transfer"mer manufacturer ARea type 249.065/035

=

R 330 II for BU4Q7
R = 220 11 for BU407 H

Waveforms
Fall and storage time

Turn-off time

......- - . - - - 0

Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its flyback excursion
5-0857

265

APPLICATION INFORMATION
Two examples are given of the BU407 in conventional MTV horizontal deflection circuits
BU 407 - application circuit for 12" to 17" - 110° - 20 mm neck picture tubes
(driver supply voltage = 10.8V)

116·IEH~

II

r-----lI
II
II
+ to.8 v

150

AUXILIARY
TURNS

'e

5-2292/2

*Nl=125 turns

¢ O.3mn;

+1O.8V
N2=30 turns ~ O.6nm; GAP=O.12nm; CORE"'DOUBLE E 19x5xB mm;FERRITE 3Et TYPE

BU 407 - application circuit for 12" to 17" - 110° - 20 mm neck picture tubes
(driver supply voltage = 25 V)

116-.I EH?
II

r-----lI

II
II
+25V

22nF

AUXILIARY
TURNS

'e

S-0852/4

.... 'O.Bv
*Nl=125 turns

¢ O.3rrm;

N2=25 turns ~ O,6rrm; GAP= O.12nm i CORE=DOUBLE E 19)(5x8 mm;FERRITE 3Et TYPE

266

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH

~\" :,:,~';, ':." ":'~\<\; : ,' ,: \,}.: \,<, "
The BU426 and BU426A are silicon multiepitaxial mesa NPN tra..,slstprs i;';:~OT -93 plastic
package, particularly intended for switch-mode CTV supply
....

ABSOLUTE MAXIMUM RATINGS
V CES
V CEO
V ESO

Ic

Collector-emitter voltage (V SE
Collector-emitter voltage (Is =
Emitter-base voltage (lc = ~i.
Collector-current

P tot
T stg
Tj

Base current
Total power diss
Storage tem .
Junctio

INTERNAL.

BU426A

800 V
375V

900V
400V

10V
6A
8A
3A
113W
-65°C to 150°C
150°C

ICM

Is

BU426

TIC DIAGRAM

,~:
MECHANICAL DATA

Dimensions in mm

Collectorconriected •to .tat>.

267

10/82

THERMAL DATA
Rth j-case

Thermal resistance iunction--case

max.

1.1

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

IESO

Collector cutoff
current (V SE = 0)

Emitter cutoff
current (I c = 0)

Test conditions
for BU426
for BU426A
T case = 125°C
for BU426
for BU426A

Min. Typ. Max. Unit

VCE = 800V
VCE = 900V

1
1

mA
mA

VCE = 800V
VCE = 900V

2
2

mA
mA

10

mA

VES = 10V

VCEO(SUS) Collector-emitter
sustaining voltage
(I S = 0)

for BU426
for BU426A

Ic ,,= 100mA
Ic ='100mA

V CE(sat) * Collector--emitter
saturation voltage

Ic = 2.5A
Ic =4A

Is = 0.5A
Is = 1.25A

1.5
3

V
V

VSE(sat) * Base-emitter
saturation voltage

Ic = 2.5A
Ic =4A

Is = 0.5A
Is = 1.25A

1.4
1.6

V
V

hFE *

DC current gain

Ic = 0.6A

VCE = 5V

ton

Turn-on time

Ic = 2.5A
lSI = 0.5A

Vcc = 250V

268

V
V

375
400

30
0.25

60
0.5

V

JlS

!

I

J

ELECTRICAL CHARACTERISTIC (Continued)
Test conditions

Parameter
ts

Storage time

tj

Fall time

tj

Fall time

Ie = 2.5A
IB2 = -lA

Min. Typ. Max. Unit

IB1 = 0.5A
Vee = 250V

2.5

3.5

J.lS

0.2

0.5

J.lS

0.75

J.lS

Ie = 2.5A
IB1 = 0.5A
IB2 = -lA
Vee = 250V
T case = 100°C

* Pulsed: pulse duration = 300 J1S duty cycle = 1.5%.

G- 4792

Safe operating ?reas

IC MAX PULSED
10

PULSE OPERA TlON

*

I

8

IC MAX CONT.!

....

r-

10,...s
100,...s
1ms
5ms
.C. OPERATION f-

./"\

V
\

,,

~ l\

*FOR SINGLE NON
REPETITIV PULSE

10- 1

\

\

8
6

I

[I

10-2

6

1

BU426
BU 426 A

~

B

4

10

= Area of permissible operation driving turn-on provided RBE = 100n and tp
II = Area of permissible operation with V BE ~ 0; tp ~ 2 J1S.

269

6

B

VCE(V)

~

0.6 p.s.

EPITAXIAL PLANAR NPN
HIGH VOLTAGE FAST DARLINGTON
The BU801 is a silicon epitaxial planar NPN Darlington transistor with integrated baseemitter speed-up diode, mounted in Jedec TO-126 plastic package. It is particularly suitable
as output stage in medium power and driver stage in high power, fast switching applications.

ABSOLUTE MAXIMUM RATINGS

VCBO
V CEO
V EBO

Ic, IE
IB

Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector and emitter currents
Base cu rrent
Total power dissipation at Tease .;;; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGRAM

600
400
7
3
40
-65 to 150
150

v
V
V

A
A
W
°C
°C

C

,--- ----1
B

I
I

I
I

I

[

I

[

I

L ______

I
~

5-5290

MECHANICAL DATA

3/82

Dimensions in mm

270

THERMAL DATA
Rth

j-case

max

Thermal resistance junction-case

3.12

°C/W

ELECTRICAL CHARACTERISTICS (Tcase= 25°C unless otherwise specified)
Parameter

,

Test conditions

Min. Typ. Max. Unit

ICEs

Collector-cutoff
current (V SE= 0)

VCE = 600V

200 JlA

IcEO

Collector-cutoff
current (ls= 0)

VCE = 400V

1 rnA

IESO *

Emitter cutoff current
(lc= 0)

v.ES =

7V

100 rnA
400

VCEO(SUS)* Collector-emitter
sustaining voltage

Ic= 10 rnA

VCE (sat) * Collector-emitter
saturation voltage

Ic= 200 rnA
Ic= lA
Ic'=' 2A

Is= 2 rnA
Is= 20 rnA
Is= 200 rnA

VSE(sat) * Base-emitter
saturation voltage

Ic= 200 rnA
Ic= lA
Ic= 2A

Is= 2 rnA
Is= 20 rnA
Is= 200 rnA

09 current gain

Ic= 200 rnA

V CE = 3V

Diode forward voltage

IF= lA

'FE *

l VF*

V
1.0
1.2
1.8

1.5
2.0
3.0

V
V
V

2
2.5
3

V
V
V

-

100
4

V

0.17

0.8

Jls

0.37

1

Jls

0.13

0.5

Jls

RESISTIVE SWITCHING TIMES
ton

Turn-on time

1.

Storage time

tf

Fall time

Vcc= 250V
Ic= 200 rnA
ISl= 2 rnA
V SEOff = -5V

£71

ELECTRICAL CHARACTERISTICS (continued)
Parameter
ton

Turn-on time

ts

Storage time

tf

Fall time

Test conditions

Min. Typ. Max.

Unit

0.18

0.8

p.s

0.38

1

p.s

0.09

O.S

p.s

VClamp= 2S0V
Ic= 200 rnA
IS1= 2 rnA
VSEoff = -SV

0.3S

1

p.s

0.09

0.4

p.s

VClamp= 2S0V
Ic= 1A
IS1= 20 rnA
VSEoff = -SV

O.S

1

p.s

0.06

0.4

p.s

Vcc= 2S0V
Ic= 1A
IS1= 20 mA
V SEoff = -SV

INDUCTIVE SWITCHING TIMES
ts

Storage time

tf

.Fall time

ts

Storage time

tf

Fall time

* Pulsed: Pulse duration = 300 JJ.S. duty cycle = 1.S%
G_4712

Safe operating areas

Ie
(A)

8

L

6
4

Il.ll~

,

PULSE OPERATION* 1I111

Ie MAX

---"--

'\

2

100}JS

1\ ~

F==F··

10}JS

1\

Ims

81-6

~I OPERAfliON

\

4

TI'lTIT

2

lTIJTTTIf .
~FOR SINGLE NON

,

\

~

REPETITIVE PULSE
10- 1

I

8
6

\

4

\

1

2

10-2

2

4

6

8

2

4

6 8

~

2

8

10

I = Area of permissible operation during turn-on with tp

272

~

1 p.s.

2

4

6 8

I

j
I
DC current gain

Collector-emitter saturation voltage
G 4713

G -4 711
8

VeEIsat)

6

IV)

po'

L_

,
10'

~-

VCE :1.5V

I\.VCE:5V

I

8

I
\

,

I
I

10

/

hF :1 0
hFPI

8

10- 2

•

68

•

10-'

o

68

, 6.
10- 2

Ic IA)

Base-emitter saturation voltage

, 6.
10-'

,

6 •

Ic IA)

I

Collector-emitter saturation voltage
-

G 4715

G 10714

VCE(sat )
IV)

VSEIsat )

Ie:

IOmA

r
V
./
/" . /

V

100m A

200mA
SOOmA
IA
I.SA

\

./
hFplO

"/

~

hFplO

r-....

.......

~

I"-.

o

o
10-'

10- 1

,

10- 1

IC IA)

273

6.

, 6.

,

10

6 •

IBlmA)

Clamped reverse bias safe operating

Saturated switching characteristics
(resistive load)
G 47.7
I
(,.,5) •

-

L

Is

/

......

-.~~t~gl[i~~--~8sf rf------+--- - ----I-- -1------+--+-- -1-- -- .. --- --

10-'

VCC=2S0V
, hFE=IOO
VSE=-SV
Tc =2S'C

•

1/

:

i

10- 2

8

'C (A)

10

VCE(c1amp)(V)

I

""

Ion

4

----

6

~ ::::::-.. I--.

10-'

/

Saturated switching characteristics
(inductive load)
G 4,,8
-

Derating curves

-

G 40719

(,.,1) •

I. (VlE-0)

,1-0.

I

•

,
10-'

~

I. (V E=-SV)

---.

""

~lamp=2S V
, hFE= 100 Tc =2S'C

~/",

}'~O

~"-:

i«~o

1,(VSp-SV)

-

"'I'. .
~

O{so _ (/At,

/~'"

o.S

•

,•

"r-.,

I'

1,(VSpO)

....

I I
IC (A)

50

274

100

r-.,

....

"

EPITAXIAL PLANAR NPN
FAST SWITCHING DARLINGTON TRANSISTORS
The BU 806 and BU 807 are silicon epitaxial planar N PN power Darlington transistors
with integrated base-emitter speed-up diode, mounted in Jedec TO-220 plastic package. They are high voltage, high current devices for fast switching applications. In
particular they can be used in horizontal output stages of 110° CRT video displays.
The BU 806 is primarily intended for large screeen, while the BU 807 is for medium
and small screens.

ABSOLUTE MAXIMUM RATINGS

BU806
400V
400V
200V

Chllector-base voltage (I E= 0)
Chllector-emitter voltage (V 8E=-6V)
Chllector-emitter voltage (18=0)
Emitter-base voltage (I c=O)
Chllector current
Chllector peak current
Damper diode peak forward current
Base current
Total power dissipation at T case ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGRAM

BUB07
330V
330V
150V

6V
8A
15A
10A
2A
60W
-65 to 1500C
150°C'

,------------,

I

I

I
:

I
'01

1

I

I

I
I

I
I

I
I
I
I
L ____________ ..J

MECHANICAL DATA

Dimensions in mm

275

5/80

THERMAL DATA

F\h j-case
F\h j-case

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

2.08
?O

°C/W

ac/W

ELECTRICAL CHARACTERISTICS(T case=25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

ICES

Collector cutoff
current (V SE=O)

for BU80?
for BU806

V cE=330V
V CE=400V

100
100

IlA
Il A

I cEV

Collector cutoff
current (VsE=-6V)

for BU807
for BU806

V cE=330V
V CE=400V

100
100

IlA
IlA

IESO

Emitter cutoff
current (I C= 0)

V Es=6V

3

mA

VCEO (sus) '" Collector -em itter
sustaining voltage
(ls=O)

Ic =100mA
for BU807
for BU806

VCE (sat) '" Collector-emitter
saturation voltage

Ic =5A

Is =50mA

1.5

V

VSE (sat) '" Base-emitter
saturation voltage

Ic =5A

Is =50mA

2.4

V

2

V

1

IlS

150
200

V
V

Damper diode
forward voltage

IF =4A

Turn-off time

Ic =5A

ton

Turn-on time

RESISTIVE LOAD

0.35

/.IS

ts

Storage time

Ic =5A
I S1 =50mA
I B2 =-500mA V cc=1 OOV

0.55

IlS

tf

Fall time

0.2

IlS

V F'"

toft

"'' '

I S1 =50mA

'" Pulsed: pulse duration = 300llS , duty cycle = 1,5%
"'''' See test circuit
276

0.4

I

I
I,i.·
,I

Safe operating areas

II

DC current gain

,

G -32411

G 3249

~:~~~+~-E~t-rH~~~~--~~~~II~-~'-~~~!I~~~!I
;~t~~ED)
*
:

PUl.SE

P RATIO

0,.. ,

10

IC MA C NTN

:,~=+,.
2

1,

VCE

1~

Tljt

+ tt

~V

II'P1"TITil: PU

:= ,·if!!
2--

j.').

".

/ / 1-1"-

2

~~~~~~+Hffi~~~~~~~
* FOR SINGLE NON
d~~

=5V

-

".

nlll1l

10': • • •

~~~+~-'-~~+m~4-iU80J11-rH~
BU8?1~,

1~'L-~L'~6~'~~~'~6~'~~~'~6~'~~~'~6~'
10"

10

10

6 •

10'

IC(A)

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G JlSO

G 3252

VCE(sat),
(V)

VCE(sat )
(V)

IC

I

OJA

i

II
II

J

, 0.3 1

2 4

5

i
6

,

,

hFE =100

I
I

t

,

,
I

, I

f-----'

i

/

h",

I

\ \

I

\.

'

=

I\..

........... ~

I

i

•

,

4

••

4

o

••

I

I II
6

,

8

10

IC (A)

277

!

' [,

I

4

~

\..

f

8

IB(mA)

Base-emitter saturation voltage

Damper diode

G 3251

VBE(oat),

G

-,

253

,f---

f--

(V)

6

hFE =10

_d::::
I-

2

-

V V

100

, 6'

, 6'

'e

'e (A)

(A)

Saturated switching characteristics
(resistive load)
G 3254

Saturated switching characteristics
(inductive load)
G 4247
t

I
("0) 8

VeE =fOOV

6

(1'5) 8
6

hFE =100

f'S(on) SOmA
f--VBE(off) = 4V
r--Vctamp = ZOOV f-

j'R,=-o.1 'R'

4

L = 500 I'H

f-

2

r--.. ~ at Teas€'
8

1"--.
.."

4

..,;

I~ ~
2

If

J-.--......

L..-

l-- ~

V

•f--- toffat TeasE' -25°C

0

6~

=100'C

6

.....

., j...-- ....

,

D

2

1

8

'e (A)

1\

I"-

V

1....-

V

~

'C(A)

278

1
HORIZONTAL DEFLECTION TURN-OFF TI ME
Test circuit

68nF

820kA

Td
1.2kfl
3.3kfl

in:?:U~~;~

4

Ll:Horizontat yokIl'1I200/JH
lrlc EHT Transformltr SAREAtype 900914

Of

equivalll'nt

11= Horizontal osc:lllator linnf I.C. TDAt180

Turn-off time waveform

-~-r---O

Turn-off time is the time for the collector current Ie
to decrease to 100mA after the collector to emitter
voltage VeE has risen 3V into its flyback excursion
5-0857

279

APPLICATION INFORMATION
Horizontal deflection circuit using the darlington BU 806 directly driven by the TDA
1180 (B & W TV set: large screen solution)

Ll = L,,,,,ari!y ,,,dut!anc"RlJII',E'

LI

~o

Unearity inductance 19+391lH

Horizontal deflection circuit using the darlington BU 807 directly driven by the TDA
1180 (B & W TV set: small screen solution).

Ll

LI

~

Lin ..anty inductanceRL46!NE:LCO

Unearity inductance 37+671lH

280

Ii

EPITAXIAL PLANAR NPN

I
«:~:J,;<,\

MEDIUM POWER FAST SWITCHING

transis~<;Irr~~ith'~eg~~ted

The BU810 is a silicon epitaxial planar NPN Darlington
baseemitter speed-up diode, mounted in Jedec TO-220 plastic packalle. ItiS<"flrtieularly suitable
as output stage in medium power, fast switching applications.

",«~"<
1,";;

ABSOLUTE MAXIMUM RATINGS
V C80
V CEO
V E80

Ic
ICM

18
Ptot
Tstg
Tj

Collector-base voltage (I E = 0)
Collector-emitter voltage (1 8 =
Emitter-base voltage (Ic = O~~\
Collector current
Collector peak curren
Base current
Total power dissi
Storage temp
Junction

600
400
5
7
10
2
75

V
V

V
A

A
A
W

-65 to 150°C
150 °C

INTERNA

c

,---------1

I
e I
I
I

I
I
I
I

I

I

L ________I

MECHANICAL DATA

Dimensions in mm

C.ollector con necteq, to tab.

281

10/82

THERMAL DATA
Rth j-case

max.

Thermal resistance junction-case

°C!W

1.66

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICES

Collector cutoff
current (V BE = 0)

VCE = 600V

200

fJA

ICEO

Collector cutoff
current (I B = 0)

VCE =400V

1

rnA

lEBO *

Emitter cutoff
current (lc = 0)

V EB = 5V

150

rnA

VCEO(su~ Colle~t~r-emitter
sustaining voltage

Ic = 100mA

VCE(sat) * Collector-emitter
saturation voltage

le=2A
Ie =4A
Ie =7A

IB = 20mA
IB = 200mA
IB = 0.7A

2
2.5
3

V
V
V

VBE(sat) * Base-er:nitter
saturation voltage

"Ic =2A
le=4A

IB = 20mA
IB = 200mA

2.2
3

V
V

VF *

IF =7A

3

V

0.6

fJs

1.5

fJS

0.5

fJS

1.5

fJS

0.4

fJS

1.5

fJS

0.7

fJS

Diode forward voltage

V

400

RESISTIVE SWITCHING TIMES
ton

Turn-on time

ts

Storage time

tf

Fall time

Vce = 250V
~ = 2A
I B1 = 20mA
BE(off) = -5V

INDUCTIVE SWITCHING TIMES
ts

Storage time

tf

Fall time

ts

Storage time

tf

Fall time

Vclam" = 250V
Ie = A
IB1 = 0.7A
VBE(off) = -5V

* Pulsed: pulse duration = 300 fJS, duty cycle = 1.5%.

282

DC current gain

Safe operating areas

10
"

~C

MAX CONT

DC OPERATION---+-<
8

~R

1\ \1

SINGLE Nail
REPETITIVE PULSE

-1

10

4--'

,
-1

10

I

I

111111

•10

8

10 2

2

-1

10

VCE( sat)
(V)

II
i
0.5A 1A I 2A

I
II
4A I I

i,

\

\

-

......

"-

10

10

-

IC (A)

VCE(sat )
(V)

I

-----' - "
hFE

I,

I

~ 1~gt
10

I

!

\

\

-1

10

G 4879

I

Ic~7AI

\

8

B7 7

II

'I
I,

5

Collector-emitter saturation voltage

Collector-emitter saturation voltage
G

4

",,'"

'"

"''' "-

f
/,
I

"'"

~

1

-1

10

283

Ie (A)

Base-emitter saturation voltage
VBE{sat I

Il

(V I

rI
I

I

I

G

i

hFE

I

II

T
11

"'"

l~

y

=-

I

I'

--

!VSE = 5V

I-----L--" RBE ~i-7 Il

e--r-FmH

~

.""'~x::

I

--

I,

• I

~

I

IC
(A)

II

!

100N'f-'

I

ill,

I

~gt::t-tl

Clampled reverse bias safe operating
areas
-4

"8 SO

I

I

,

10

I

!

i

(

,

F=t

I

I

II

'I

I

•
,i
II

,

\

i

I

II

i

,

I

-,

10

1

-,

1

10

Saturated switching
(resistive load)

i

-,

1\

,

10

10

IC (AI

characteristics

Saturated
t
(fS

switching characteristics
G

)§__ c __
r:::==- c=-+-

++t+

e---- f----

,

-

i.S 88

VCE(c1amp) =250V
IhFE - 100
'
VBE=-5V
Te =25'C

-,I

--==1=

ts -

......

4

, ->c

10

I

iI

:f--,

.

VCE(elamp)(V)

.

I

"- i"-

!
tf

II

6

,
1

-,

10

-,

10

-,

10

284

,

.

IC (A)

MULTIEPITAXIAL PLANAR NPN
HIGH VOLTAGE POWER DARLINGTON
The BU 910, BU 911 and BU 912 are high voltage, silicon NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers, etc.

ABSOLUTE MAXIMUM RATINGS

BU910

Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current
Base current
Total power dissipation atT case 625°C
Storage temperature
Junction temperature

400V
350V

BU911

BU912

450V
500V
400V
450V
5V
6A
10A
1A
60W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c

-----------

--1
I
I

I
I
I

Dimensions in mm

MECHANICAL DATA
Gollectorconnected to tab.

T0-220

285

5/80

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

2.08 °C/W

ELECTRICAL CHARACTERISTICS (T case= 2SOC unless otherwise specified)
Parameter

Collector cutoff
current (V BE= 0)

ICES

Test conditions

for BU910
for BU911
for BU912
T case= 12SoC
for BU910
for BU911
for BU912

V cr400V
V cr4SOV
V CE=SOOV

1
1
1

mA
mA
mA

V cr400V
V CE=4S0V
V crSOOV

S
S
S

mA
mA
mA

V cr3SOV
V cr400V
V cr4SOV

1
1
1

mA
mA
mA

S

mA

I CEO

Collector cutoff
current (I B= 0)

for BU910
for BU911
for BU912

lEBO

Emitter cutoff
current (I c =0)

V EB=SV

V CEO (sustColiector-emitter
sustaining voltage
(I B=O)

VCE (sat)

V BE (sat)

VF

,..

,..

Collector-emitter
saturation voltage

Base-emitter
saturation voltage

Diode forward voltage

Min. Typ. Max. Unit

I C =100 mA
for BU91 0
for BU911
for BU912
for BU91 0 and BU911
I B =SOmA
I C =2.SA
for BU912
Ic =2A
I B =SOmA
All types
I B =200mA
Ic =4A
for BU91 0 and BU911
I B =SOmA
I c =2.SA
for BU912
Ic =2A
I B =SOmA
All types
Ic =4A
I B =200mA
IF =4A

,.. Pulsed: pulse duration = 300 J.IS, duty cycle = 1.S%
286

3S0
400
4S0

V
V
V

1.8

V

1.8
1.8

V
V

2.2

V

2.2
2.S

V
V

2.S

V

G-385t

Safe operating areas
i

10

PULSE OPERATION •.,

I C MAX PULSED

: I

lOlls
OOfJs
0,5ms
I-Ims
IOms
I;

B

ICMAX CaNT.

I

~-

.....

I

Dcl olJLTioN ..

I"-

f'....

\

l\-\

/~

:i

1'1.

I
1

10

I-...

I

i
6

6

B

10

Derating curves

~

I":

"f' .....
--

-.

18/6

~

l/~

I}'~D

~«>

0.5

~'a.I1'--.

~(1.

'"

~~c_t-t-

~.

o

I
50

8

f-

...,

10'

14

l>C

VCE (V)

Thermal transient response
G 3801

--

~8m
BU9~2

H

7

. I-- l- t--. -

\

\

"FOR SINGLE NON
REPETITIVE PULSE .

,

I-- t-

1\

I III

~

,.....

100

287

6

.~£

8

10 3

DC current gain

Collector-emitter saturation voltage
G 3853

G 3854

•
6

,

I

veE (sat)

1/
125'C

V

/' ./

'cr

(V)

'"

...

- ......"~

~

V

I

~~

!

1/4O'C

IC =1A
-

2A
3A
loA

I-

I--

1-

I-

r717

I-~

~/ I/'IL /1-

---

---

-

l-

'i;r2V

!

Ff

I

10.

6

Ie (A)

50

Collector-emitter saturation voltage
veE(sat

(V)

)1-----1=-

-

hFE=50
1.5

~=--

[~-.

I--

- - - - - - +--~

+-

:::;; ~ ~

~
115'C
I

0..5

--j-

1---1 - - - - - - -1--0.

1-

--

1.5

\--f,--- I--\--

L-;-

-

li25'C

-

--

J..o-"_ +----+--\--

I-------l---+--'--+--+-+-+--e-I

,- \--

~

W!!I'

Ie (rnA)

(V)

-

--\--- i- f-

r-------f
::.:.J.-oo"
::..:::::;+p

I-

ISO,

G-Jass
VBE(sat)

----

ICC

Base-Emitter saturation voltage

G 3855

---

f-+

,

:-~~i~ 1- 1--

t-r--

FF-I

0.5

f--:-1-

.-+-1=
8

0.

10

Ie (A)

8

Ie (A)

288

I

I·'.
:1

I'l

".'I

Clamped reverse bias
safe operating areas

Saturated switching characteristics
G 3851

t

G 3858

Ie

H

()JS) G

(A)

1-----

+--1

10

hFE = 50
Vee =250V

8

6

VBE(off)= -5V

5f=--

--

'r------1

If - -

~

BU910BU911
BU912 _

Ion

_ f-- P-

........ Is

I---~

2.

~.

l,

10

Clamped ES/b test circuit
40V

500 )JH
TEST CONDITIONS:

5V> l-vsB

I >ov

1c/ I S=50

tP

=adjusted

nominal
RBS = 1n

for

Ie

289

6

8

1

VeE(clamp(~r

MULTIEPITAXIAL PLANAR NPN

HIGH VOLTAGE POWER DARLINGTON
The BU920P, BU921P, BU922P are high voltage high current sir
monolithic Darlington configuration in SOT -93 plastic pack
automotive ignition applications and invert circuits for motor c

ABSOLUTE MAXIMUM RATINGS
V CES
V CEO
V EBO
Ic
ICM

IB
Ptot

T st9
Tj

Collector-emitter voltage (V BE = .
Collector-emitter voltage (I B .
Emitter-base voltage (Ic -;;.
Collector current
Collector peak curren
Base current
Total power d·
Storage te
Junctio

BU921P

BU922P

450V
400V
5V

500V
450V

lOA
l5A
5A
105W
-65 to 150°C
150°C

INTERNAL

MECHANICAL DATA

10/82

Dimensions in mm

290

THERMAL DATA

I

J\
Rth

j-ease

Thermal resistance junction-case

max.

1.2

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter
ICES

Collector cutoff
current (V BE = 0)

Test conditions
VCE = 400V
VCE = 450V
V cE =500V

1
1
1

mA
mA
mA

Tease = 150°C
for BU920P VCE = 400V
for BU921P VCE = 450V
for BU922P VCE = 500V

5
5
5

mA
mA
mA

1
1
1

mA
mA
mA

20

mA

for BU920P
for BU921P
for BU922P

I CEO

Collector cutoff
current (lc = 0)

for BU920P
for BU921P
for BU922P

lEBO

Emitter cutoff
current (I C = 0)

V EB = 5V

V CEo(susi Collector-emitter
sustaining voltage
(lB = 0)

Min. Typ. Max. Unit

VCE = 350V
V cE =400V
V cE =450V

Ic = 100mA for BU920P
for BU921P
for BU922P

291

350
400
450

V
V
V

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Min. Typ. Max. Unit

Test conditions

VeE(Sal) * Collector-emitter
saturation voltage

Ie
Ie

= 5A
= 7A

18
18

= 50mA
= 140mA

1.8
1.8

V
V

V8E (sal) * Base-emitter
satu ration vo Itage

Ie
Ie

= 5A
= 7A

18
18

= SOmA
= 140mA

2.2
2.5

V
V

VF *

IF

= 7A

2.5

V

Diode forward
voltage

* Pulsed: pulse duration

= 300 fJ.S, duty cycle = 1.5%.

G-4814

Safe operati ng areas

IC ~
(A)

4

I l

PULSE OPERATION

IC MAX PULSED
10 B

II

"

IC MAX CONT.

""

,

y

,1\

.A.

1L~S-~

100~s-1/

~

1ms
5ms
D.C. OPERATION

10- 1

\ \

*FOR SINGLE NON
REPETITIVE P LSE

8
6

BU 920P BU921P
BU 922P

l

10-2

4

6

4

8

10

292

6

B

r4

10 2

6

B

"

MULTIEPITAXIAL PLANAR NPN

l~

t,:

HIGH VOLTAGE POWER DARLINGTON

I
!

The BU 930, BU 931 and BU 932 are high voltage, high current silicon NPN transistor
in monolithic Darlington configuration in Jedec TO-3 metal case specially intended
for automative ignition applications and inverter circuits for motor controls.

ABSOLUTE MAXIMUM RATINGS

BU930

VCES
VCEO

400V
350V

V E80
Ic
ICM

18
Ptot

Tstg
Tj

Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c=O)
Collector current
Collector peak current
Base current
Total power dissipation at T case :::25°C
Storage temperature
Junction temperature

BU931

BU932

450V
500V
400V
450V
5V
15A
20A
1A
150W
-65 to 175°C
175°C

INTERNAL SCHEMATIC DIAGRAM
c

'

,----- -- --)1---:

'~\~I

8~~,!
:

son +_~

i

------------0--E

MECHANICAL DATA

Dimensions in mm

Collector connected to case
10,9

TO-3

293

10/82

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

°C/W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter

Collector cutoff
current (V 8E=0)

ICES

Test conditions

V CE=400V
V CE=450V
V CE=500V

1
1
1

mA
mA
mA

V CE=400V
V CE=450V
V CE=500V

5
5
5

mA
mA
mA

V CE=350V
V CE=400V
V CE=450V

1
1
1

mA
mA
mA

SO

mA

Collector cutoff
current (I 8=0)

for BU930
for BU931
for BU932

I E80

Emitter cutoff
current (I C= 0)

V Es=5V

VCE(sat)

V8E(Sat)

•

•

Collector -emitter
saturation voltage

Base-emitter
saturation voltage

Unit

for BU930
for BU931
for BU932
T case=150°C
for BU930
for BU931
for BU932

I cEO

V CEO (sus) • Collector-emitter
sustaining voltage

Min. Typ. Max.

IC
for
for
for

=100mA
BU930
BU931
BU932

for BU930and BU931
I C =7A
18 =70mA
18 =100mA
Ic =8A
18 =250mA
I C =10A
for BU932
Ic =8A
18 =1S0mA
for
Ic
IC
for
Ie

BU930 and BU931
=8A
18 =100mA
=10A
18 =2S0mA
BU932
=8A
18 =150mA

294

3S0
400
450

V
V
V

1.6
1.8
1.8

V
V
V

1.8

V

2.2
2.S

V
V

2.2

V

ELECTRICAL CHARACTERISTICS (continued)
Parameter

V F*

Test conditions

2.5

Diode forward
voltage

IF

Functional test
(see test circuit
figg. 2 and 3)

for BU930
L=7mH
V CE=350V
for BU931 and BU932
L=7mH
V CE=400V

* Pulsed: pulse duration

Safe operating areas

Min. Typ. Max. Unit

=10A

V

8

A

8

A

=300 ~s, duty cycle = 1.5%

G- 3B62

Ie

8
6

(A)

PULSE OPICRATION*

, ICMAX PULSEb

10 f-ls

2

10

ICMAX COt'{

:'-..

t'.

mfJ
1ms
Oms

8
f

,

"

1

DC OPERATION

\

\

1\

B
6

,
2

10-1

,,,\

~[~&W+~5t~02~E

8
6

,
2

p

-,

~-.;;;
i):

2
,

,8

..

10

295

f-I-~
j

t

;,

Vcr (V )

Thermal transient response

DC current gain
G

4~5

IT 1
25'C
/-40'C

~;r

1/

V l/v
7

~

1\

Vr~=2V

1
I

10

10-'

Collector-emitter saturation voltage

Base-emitter saturation voltage

G 1,649

1

VCEC,at )
CV)

G

vSE (sal )
(V)

... -40'C
25'C

V/

/125'C

/

I

1//

~

~
~

-40'C

~
-'"
~

I--

l.-l.--

25'C

V

j..:j;:'
j...-

125'C

c.-

V
hFEo8O

hFE=6(

o

o
10

10

296

~848

Base-emitter saturation voltage

Collector-emitter saturation voltage
G '8 4 1

I

VCE(sat )
(V)

G '('&50

I
I

V8E (sat )
(V)

1125'C

"' -4O'C
/ / 25'C
"/125'C

I
II

---

25'C

I

---40'C

i--':::
~

..... 1-"
",

........

"

hFE=60

hFE=80

o
10

.1C(A)

10

IC CA )

Saturated switching characteristics

Collector-emitter saturation voltage

-

G 4146

VCE(sat)
(V)

t

-

(1'5)
5

Ie =ISA
IC·IOA·
8A
6A
4A
2A

VCC=I50V
"FE"4O
IBI= -IB2
8

•
•

~

.....

)/

-

~

,/

./

2

o

50

100

1!iO

•IC(A)

IBCmA)

297

Clamped reverse bias
safe operating areas

Fig. 1 - Clamped EsAl test circuit

IC
(A)

40V

tp

10

..fl

500 )JH

TEST CONDITIONS:

I>

5V> l-vBB

0

I C /1 B =40

tp =adju.sted
nominal
RBB= 1It

for

Ie

3504450

10

VCE(clamp)(V)

Fig. 2 - Functional test circuit

Fig. 3 - Functional test waveforms
i6.6ms
11.6ms
INPUT
SIGNAL

Vz
BASE
CURRENT

DRIVER AND
CURRENT

LIMITING
CIRCUIT

0 1 - - -......

o f----'

COLLECTOR
CURRENT

01----COLLECTOR
EMITTER
VOLTAGE

TES T DURATIO N : 2 sec
for BU930 Vz = 350V
for BU931 and BU932 Vz =400V
5- 3676

o
5-3677

298

MUlTiEPITAXIAl PLANAR NPN

AUTOMOTIVE IGNITION DARLINGTON
,';","',

",,'''1

j\t~Darli~~t~~

The BU930P, BU931P and BU932P are high voltage silicon
transistors in
SOT--93 specially intended for automotive ignition appliClltion· am,j;j inverter circuits for
motor controls.

ABSOLUTE MAXIMUM RATINGS
V CES

VCEO
V EBO

Ic
ICM

IB
Ptot
Tstg
Tj

···,'400V

Collector-emitter voltage (V BE =
Collector--emitter voltage (I B =
Emitter-base voltage (I c =
.
Collector current
Collector peak current,
Base current
Total power diss· .
Storage temp
Junction

350V

BU931P

BU932P

450V
400V
5V
15A
20A
1A
105W
-65 to 150°C
150°C

500V
450V

INTERN
c
I~------l

I
B

I
I

1

:
I

R1

R

L~ _ _ _ ~

MECHANICAL DATA

,!I

Rl Typ. 175[).
_---.J R2 Typ. 50[).

Dimensions in mm

CollectO(Cllllnected to.tab.

299

10/82

THERMAL DATA
Rth j-ease

max.

Thermal resistance junction-case

1.2

°C!W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

Collector cutoff
current (V SE = 0)

Test conditions

Min. Typ. Max. Unit

for BU930P
for BU931P
for BU932P
Tease = 150°C
for BU930P
for BU931P
for BU932P

VCE = 400V
VCE = 450V
VCE = 500V

1
1
1

mA
mA
mA

VCE = 400V
VCE = 450V
VCE = 500V

5
5
5

mA
mA
mA

VCE = 350V
VCE = 400V
VCE = 450V

1
1
1

mA
mA
mA

50

mA

ICED

Collector cutoff
current (I S = 0)

for BU930P
for BU931P
for BU932P

IESO

Emitter cutoff
current (I C = 0)

V ES = 5V

VCEO (sus) Collector-emitter
sustaining voltage

Ic = 100mA
for BU930P
for BU931P
for BU932P

VCE(sat) * Collector-emitter
saturation voltage

for BU930P
Ic =7A
Ic = SA
Ic = 10A
for BU932P
Ic = SA

and BU931P
Is = 70mA
Is = 100mA
Is = 250mA

1.6
1.S
1.S

V
V
V

Is = 150mA

1.S

V

for BU930P
Ic =SA
Ic = 10A
for BU932P
I,c =SA

and BU931P
Is = 100mA
Is = 250mA

2.2
2.5

V
V

Is = 150mA

2.2

V

2.5

V

V SE (sat) * Base-emitter
saturation voltage

V F*

Diode forward
voltage

IF = 10A

* Pulsed: pulse duration = 300 IlS, duty cycle = 1.5%.

300

V
V
V

350
400
450

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUR 50 is a silicon multiepitaxial planar N PN transistor in modified Jedec T0-3
metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VC80
VCEO
VE80
Ic
ICM

18

Ptot
Tstg
Tj

Collector-base voltage ( I E = 0)
Collector-emitter voltage (I 8= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case:S25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

200
125

V

V

10
70
100

V
A
A

20

A

350

W

-65 to 200
200

°C

ac

DIAGR:~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case
,7~

1.

301

17

max

5/80

THERMAL DATA

f\h j-case

0_5

max

Thermal resistance junction-case

°C/W

ELECTRICAL CHARACTERISTICS(T case=25OCunless otherwise specified)
Parameter

Test conditions

ICBO

Q)lIector cutoff
current (I E=O)

V c EF200V
V c8=200V
T case=125OC

ICED

Q)lIector cutoff
current (18=0)

V CE=125V

I E80

Emitter cutoff
current (I C= 0)

V E8=7V

Min. Typ. Max.

Unit

0.2
2

mA
mA

1

mA

0_2

mA

VCEO (sus) *Collector-emitter
sustaining voltage

Ic =200mA

125

V

V E80

IE =10mA

10

V

Emitter-base
voltage
(lc=O)

VCE(sat) * Q)lIector-emitter
saturation voltage

Ic =35A
Ic =70A

18 =2A
18 =7A

1
0.8 1.5

V
V

V8E(Sat) * Base-emitter
saturatio!'J voltage

Ic =35A
Ic =70A

18 =2A
18 =7A

1.6

1.8
2

V
V

hFE*

DC current gain

Ic =5A
Ic =50A

V CE=4V
V CE=4V

20
15

Isib

Second breakdown
collector current

V cE =20V

t =1s

17.5

fT

Transition frequency

Ic =1A
f =1MHz

V CE= 5V

10

302

100

-

A

16

MHz

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

Ie =70A
Vec=60V

B1

Ie =70A
I B2 =-7A

Clamped Es/b
Collector current
(fig. 1)

* Pulsed: pulse duration

2

!is

0.1

0.5

!is

70

V clam8=125V
L =5 O!iH

A

=300 IJS, duty cycle ::;2%

Derating curves
G 4195

6
6

,
,

10

f~AX
'f---.CONt ,

,

:

:

,

,

~ DC

i i

.......

lili

-:~I

10ms

~

~_l_t
I

!-

,

I

I

~~
I

-+- l -t-

~ t--...'%,,,J

I'

t--...'7<'"D

,

,

0.5

i

I

r-....

I

-r
,

,
2

66

10

,

66

~52

,

50

303

...... r--.,

1"""0<1'","-'1

~Oi'

I

:

rr -1I

i-t-- f66

10'

l'....

-t

6
6

2

l -t-

i

.

H

i

,
,

.-

'

!

OPERATION

FOR SINGLE NON
REPETITIVE PULSE

I

jJS

1~~~S ~

1'.,.,

-f

~i--

+Hf ·····~-r,

70 6

10

G 3665

c+,~

.~

ICMAX P~LSED PULSE OPERATION-

10'

!is

0.82
I B1 =7A
Vec=60V

Safe operating areas
IC
(Al

Unit

0.5 1.2

=7A

.

Fall time
(fig. 2)

tf

I

Min. Typ. Max.

100

r-...
......

~

~~+-I

"{,-

I I i'....

Thermal transient response

DC current gain
G 3911

f

1I 125 ,C

..........

60

r-

25'C

40

;-..... ;::r-.

-30'C

~

I

I

I

I

20

10

10- 3

10- 5

10- 2

I
I

I

10- ' «sec)

4

II

4

66

4

10

1

Collector-emitter saturation voltage

VCE ,4V

6 6

6 6

IC(A)

Collector-emitter saturation voltage
G

G 3912

VCE(sat )

VCE(sat )

(V)

(V)

3913

hFE=XJ

1.5

1.5

1\
-30'C25'C

IC ,70A
I

~

,"

125'C-

0.5

0.5

1'..30A

"

I~

/

N.
lOA

~

" "-..:

1\..SOA

~

T

"'-

o

,

8

6

10

304

8

Ic(A)

Base-emitter saturation voltage

Saturated switching characteristics

G 3914

G 3915

t

VBE(sat )

'

(1'5) •

(V)

,

hFE= 10 I

I-- t--'

.

"""'"

1.5

t--

~ t-.....

/
~

, Vee GOV

~

-3O·C

6 hFE =10
Tease = 2S-c

./

--+25·C

,

0.5

V
i'-

2

I
4

• 8

4

• 8

1

4

10

If

, ,

IC (A)

10

Transition frequency
G 3899

(MHz)

1'cE =5V
f=IMHz

f""oo..
ts

Vee

=60V

r-....

2 hFE =10

20

"

Tease =12Scrc

6

1--.

1"
i,..-

"'

-

.........

Ion

2

10

1/

./

7

If

10-1

f..

V

fT

'.

•

Ion_

G 3916

,
•

,

r-....~

,

••

Saturated switching characteristics
us)

........

125·C

•

6

10

••

IC (A)

10-1

305

.,

6

6

IC

(AI

Collector-base capacitance

Clamped reverse bias safe
operating areas

G 3917

CC80

IC

8

(pF)

,

G 3918

(A) 5

,

6
4

2

,
10'
8

10

-

d

6

,.
2

6

,
6

........

,

4C--- SEE TEST CIRCUIT OF FIG.l
2

11111111

11111111
4

6 8

4

10

4

68

10'

4

6 8

68

VCS (V)

TEST CONDITIONS:

"I-vss I ..

1c/ l
tP

VCC : 60 V
2V
R _ VCC -VCE(sat)

s: 10

=adjusted
nominal

68125

10'

1

4

68

ItE(clamp)1 V)

Fig. 2 - Switching times test circuit
(resistive load)

TEST CONDITIONS:·
7V

III
4

10

Fig. 1 - Clamped Esib test circuit

III

C-

IC

I NPUT PULSE
pulse width :10 I's
trJtf::: SOns
duty cycle =1%

for

Ie

Rss=",'ll

5-3681

306

I, ',
"

I:

MULTIEPITAXIAL PLANAR NPN

I,)

~

~

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

I"

The BUR 51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO
!c
ICM

IB

Ptot
Tstg
Tj

Collector -base voltage ( I E = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case :'025 °C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

:
4

MECHANICAL DATA

300

V

200

V

10
60

V
A

80

A

16

A

350
W
-65 to 200°C
200
°C

Dimensions in mm

I

Collectorconllected to case,

,I

II
!

I,j
II~

I
I

307

5/80

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

0.5

°C/W

ELECTRI CAL CHARACTERISTI CS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Icso

Collector cutoff
current (I E=O)

V cs=300V
Vcs=300V
T case=125°C

ICEO

Collector cutoff
current (I s=O)

V CE=200V

IESO

Emitter cutoff
current ( I C= 0)

V Es=7V

V CEO (sus) "'Collector-emitter
sustaining voltage
VESO

Emitter-base
voltage
(I c =0)

VCE(sat)

... Collector-emitter

VSE(sat)

... Base-emitter

hFE

...

saturation voltage

saturation voltage
OCcurrent gain

Min. Typ. Max.

Unit

0.2
2

mA
mA

1

mA

0.2

mA

Ic =200mA

200

V

IE =10mA

10

V

Ic =30A
Ic =50A

Is =2A
Is =5A

1
0.9 1.5

V
V

Ic =30A
Ic =50A

Is =2A
Is =5A

1.55

1.B
2

V
V

Ic =5A
Ic =50A

V CE=4V
V CE=4V

20
15

100

-

15ft,

Second breakdown
collector current

V cE =20V

t =1s

17.5

fT

Transition frequency

Ic =1A
f =1MHz

V CE=5V

10

30B

-

A

16

MHz

ELECTRICAL CHARACTERISTICS (continued)
Parameter
ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Ic =50A
Vec=100V

I

Ie =50A
I B2 =-5A

Fall time
(fig. 2)

* Pulsed: pulse duration

B1

=5A

I B1 =5A
Vec=100V

o

Oamped Esib
Q)lIector current
(fig. 1)

IlS

0.9

2

IlS

0.24 0.6

IlS

G J665

(W)

-- f--- PULSE ~TlJN'

I e MAX PULSED

ill'S

8

: Ie MAX eONT.

~

CPERATiO

"" 1\

I~ ~

ms

Oms

:-....: t---.,~(

I' ...... .:;:It:D

8
6
4
2

A

Ptot

8
6

(A) ,

10

1

Derating curves

-

2

0.35

=300 IlS. duty cycle ",;;2%

G 3902

10'

Unit

50

V clam =200V
L =5 OIlH

Safe operating areas
IC

Min. Typ. Max.

Test conditions

.......
FOR SlNGL

\

REPEmlVE FUSE

i'-..

0.5

r-...

~-.......Dt,s~

r-...

"':-fh,

8

......

~

~~ f-

6

~

4

'\

2

,

6

,

,

10

6

,

"

10'

I I i'-..
4

6

,

o

VCE (V)

309

50

100

150

Tease ('e)

j

Thermal transient response

DC current gain
G 3893

hFE

12S'C

60

"- \

V

!'--..

2S'C

40

...........

J.,.---"""
Tease :::-30"C

I

~~
!

V

VCE .4V

20

II
10

4

68

4

Collector-emitter saturation voltage

4

6 8

10

1

Collector-emitter saturation voltage
G 3895

G 3894

VCE(sat)

VCE(sat)

(V)

(V)

'hFE ·l0

1.5

Ie
t- lOA
lOA
30A
40A
j~ SOA
60A

I

17

-30'C
2~

t-

r~

/

"

0,5

"/ '/

V

./

-t--

"'o

o

68

IC (A)

,

10-1

16 (A)

310

68

V
68

1

10

'/

Base-emitter saturation voltage

Saturated switching characteristics

G-3896

G 3897

I

VBE(sat )

()JS)

(V)

8--

hFE -10
Vec =100V
Tease- :;; 25D C

6

hFE =10

,

1.5
-30'C

_lIector-base capacitance
G 3900

CCBO
(pF)

B r-~

Ie ,

-~+

f--

(A)

6

I

1

I---

I

I i

II

10

1'1
I,

i

'r-

I

"-,,-

J

II

I

I

mt-...

:ll+

II'
I I

i

i

,Iii

lll:
i I Ii

I

,11

I

10'

i

!

,

,

I
I

I

II

r-

~~~~!!~~~~!1~~~~rGl"~90~4~

I

B

10

10'

: ~ SEE TEST CIRCUIT OF FIG_I

' I

10-'

, 6'

VCB

L---L--L-LllilJL~L-Ll.LLllU~--L-L-Ll-LWJ

10

"OV

TEST CONDITIONS:
TEST CONDITIONS'

v'"

l-vBB

I

~

Vec

=100V

2V

R

IC/IB=IO

_ VCC -VCE(sat)

C-

IC

INPUT PULSE
pulse width =IO}Js
tr J tf::: SOns
duty cycle =1 °/0

tp :::adju.sted for
nommal Ie

RBa

10'

VeE (V)

Fig. 2 - Switching times test circuit
(resistive load)

Fig. 1 - Clamped Esib test circuit

7

, 6'

, 6'

(V)

~ l/l

312

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUR 52 is a silicon multiepitaxial planar N PN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
V EBO

Ic
ICM

IB
P tot
Tst9

Tj

Collector-base voltage (I E=O)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I c= 0)
O:>lIector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case::;25°C
Storage temperature
Junction temperature

350
V
250
V
10
V
60
A
80
A
16
A
350
W
-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGR~~

MECHANICAL DATA

Dimensions in mm

COllector connected to case

j
!

·l\IIodifiedTO.,.3

313

5/80

THERMAL DATA

F\h j-case

Thermal resistance junction-case

max

0_5

°C/W

ELECTRICAL CHARACTERISTICS(T case=25OC unless otherwise specified)
Parameter

Test conditions

ICBO

Collector cutoff
current (I E=O)

V cB=350V
V cB=350V
T case=125OC

IcEO

Collector cutoff
current (I B=O)

V cE =250V

lEBO

Emitter cutoff
current ( I C= 0)

V EB=7V

Min. Typ. Max.

Unit

0.2
2

mA
mA

1

mA

0.2

mA

~

V CEO (sus) ·Collector-emitter
sustaining voltage
V EBO

Emitter-base
voltage
( Ic=O)

VCE(sat)

... Collector-emitter

VBE(Sat)

... Base-emitter

hFE

...

saturation voltage

saturation voltage
DCcurrent gain

Ic =200mA

250

V

IE =10mA

10

V

Ic =25A
Ic =40A

IB =2A
IB =4A

Ic =25A
Ic =40A

IB =2A
IB =4A

Ic =5A
Ic =40A

V CE=4V
V CE=4V

20
15

V
V

1.8
2

V
V

100

-

1.5

1st!>

Second breakdown
collector current

V cE =20V

t =1s

17.5

fr

Transition frequency

Ic =1A
f =1MHz

V CE=5V

10

ton

Turn-on time
(fig. 2)

Ic =40A
V cc=100V

I B1 =4A

314

1
0.701.5

-

A

16

0.3

MHz

1

I1S

ELECTRICAL CHARACTERISTI CS (continued)
Parameter
Storage time
(fig. 2)

ts

tf

Ie =40A

161 =4A
Vec=100V

162 ~4A

Fall time
(fig. 2)
Clamped Est!>
Collector current
(fig. 1)

* Pulsed: pulse duration

10' a

1.2

2

J.l.S

0.20

0.6

J.l.S

A

=300 IlS, duty cycle =2%

Derating curves
G 3883

Ie ,
2

G 3665

I
l.~

I
,

leM~X ~!iJ

PULSE OPE AllON'

6

_. - I-- f

II

f- .

..

lO~s

100

Ie MAX C\",'

Unit

40

V c,am8=250V
L =5 OJ.l.H

Safe operating areas

(A)

Min. Typ. Max.

Test conditions

~s

........

2

D OPERATION

10 a

,
,

1ms

----- 1\

10
m.

~~

"- t"-.. 1% i

f', '~/l(D

\
FOR S/'IGlE NON
REPETITIVE P\..LSE

\

2 •

,
,

a

0.5

...... f'."

r......

8

4

,

• 8

10

4

• 8

...... 1--.

I"'" D test circuit

tpJl

,

2

10'

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, HIGH POWER, FAST SWITCHING
The BUT13 is a silicon epitaxial planar NPN Darlington transistor with integrated baseemitter speed-up diode, mounted in jedec TO-3 metal case. It is particularly suitable as
output stage in high power, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEO
V EBO
Ic
ICM

IB

Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (t p = 10ms)
Base current
Total power dissipation Tease ~ 25°C
Storage temperature
Junction temperature

600
V
400
V
10
V
28
A
35
A
6
A
175
W
-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGRAM

;-- -- ~-=-:::lc -;
, ~ i'

',t~ ~.I.

f!,

,

_

O!

I

,

R1 = loon

R2 = 350n

0[

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TD.-3

319

10/82

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max.

ELECTRICAL CHARACTERISTICS (Tease
Parameter

= 25°C unless otherwise specified)

Test conditions

Collector cutoff
current (V 8E = -1.5V)

VCE
VCE

= 600V
= 600V

I CEO

Collector cutoff
current (1 8 = 0)

VCE

= 400V

I E80 *

Emitter cutoff
current (Ic = 0)

V E8

= 2V

ICEV

°C/W

Tease

Min. Typ. Max. Unit

= 100°C

100
2

mA

1

mA

175

mA

jlA

V CEO (sus) Collector cutoff
sustaining voltage

Ic

= 100mA

V CE(sa!) * Collector-emitter
saturation voltage

Ic
Ic
Ic
Ic

= lOA
= 18A
= 22A
= 28A

18
18
18
18

= 0.5A
= 1.8A
= 2.2A
= 5.6A

2
2.5
3
5

V
V
V
V

V 8E(sat) * Base-emitter
saturation voltage

Ic
Ic
Ic

= lOA
= 18A
= 22A

18
18
18

= 0.5A
= 1.8A
= 2.2A

2.5
3
3.3

V
V
V

VCE
VCE

hFE

DC current gain

Ic
Ic

= lOA
= 18A

VF

Diode forward voltage

IF

= 22A

400

= 5V
= 5V

V

V
V

30
20
4

V

0.35

0.6

jlS

0.8

1.5

jlS

0.25

0.6

jlS

RESISTIVE SWITCHING TIMES
ton

Turn-on time

ts

Storage time

tf

Fall time

Vcc = 250V Ie
IBI = 0.5A
V BE(off) = -5V

320

= lOA

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

Min. Typ. Max. Unit

INDUCTIVE SWITCHING TIMES

t5

Storage time

tf

Fall time

t5

Storage ti me

tf

Fall time

V Clamp = 250V Ic = lOA
IB1 0.5A; VBE(off) = -5V

0.8

1.5

/J.s

0.08

0.5

/J.s

= 20A
= 5V

0.8

1.5

/J.s

0.35

0.7

/J.s

V Clamp = 250V Ic
IBI = 2A; VBE(Off)

* Pu Ised: pulse duration = 300 /J.s, duty cycle = 1.5%.

G-4B161

Safe operating areas

-----

lC~~"LSElY
,'ll'\..5ms
IcMAX

lms
-

C~NT~I\

1\

~

!i

100.05

i

I

10
~

I

~-----l-_

'-t-'

...--l. __ '1

, '

1

,I

i

! :1

6r=:

~ttRt

21---1

-L:_

e~

\.

,: I

==r

41--- f--H

i

~

+--

1--1

" .

: I,
I-

I

'I

- ..

8

~-

'II II

"

'1\ ,

,

"

~.

I

'ii

i

]i'

t~

1

' I

I

I

!, I",
I
I

I'

-++Htt
--+
: l.l).
~-T: ! ~ I : ii
I

\1\

I'

:

5

4

~+

--

!

II

I·

TIr
4

I

6 8

10

321

I

I

I

II

II

DC current gain

Collector-emitter saturation voltage
G

G l, 724

4722

.Vc~r4=
!

+12~'Ci'
+25°C

~-

I

I

i --1

if:I iJ~

r'

/l"

10~

.

/. -

J

i

I
..!..-

----

-'--

± 1\\~

,

r-:-

-

10

i\

+H--lljXP

1---+-+-+ H+++---+-++-I~,j

J
L

i

CI

~II!\:

!

i

I J

_-+-1- HiT

B

.1-- -

i~-+' HrI : I I!

~-

-, ,

l~-

I

10

I
I

I'
III

'0

10

Collector-emitter saturation voltage
G

I

VCE(sat )

I

II

111111 \

Base-emitter saturation voltage

4726

G

1111

( V)

0.1

11A

SA

lOA

"72 7/\

VIJ

VSE(sat )

(v)

A

hFE =10

lSA : 20A

U
'(f

r-r
f--"

"
"-

i

V

I

2S'C

;--

t--

I

--"'""'"

-40'C

I-- 12S'C
r-- r--l

,

,

I

:

I

I

I II

\

10

10'

10'

-,
10

Is (mA)

322

I

I

10

II II
i I II

I

DC current gain

Collector-emitter saturation voltage
G

I

I

1

108~_.
i

!

• Ii

4+
],I:
i

1

lill!
,

1.11

, a

·1

,

~.
I

·1

IC(A)

10

10

,

,

I

I

: I

!

1111

G

(pF)

h FE "lO/I
I
//h FE "2C

'/

472 9

cceo

1.#1 I

Vh

iC(A)

Collector base capacitance

G 4728

(V)

, , ia

I

, ,8
10

10

Base-emitter saturation voltage
VSE(sat )

"725

l
I

200

hFE" 100

1\
\
I\,

~
~

i"""'"
100

·1

10

"
10

10

323

f'.,

r-....

......
Vcs (V)

Collector cutoff current

Diode forward voltage

G

G ~ 4730

v,

tL

(V)

e----25~

._--+-+-

VeE= 600V

t--

--

VBE off =1,6 V

f-·

. ill
... +t

I

1---_.

10

I

I

,

I

i

I

G

f--

1

25

50

75

100

125

Saturated switching characteristics
(resistive load)

to 737

t'
Jn~FE=50
I
VCC=250V
!

le2
(A)

t-~

t1.

-

"BE=- 5V

~ 1-1-

-=-

..... . . . V

II--

I

I

Reverse peak current

-

+-t/

-f-

o

'/

f-

--

.

-,
10

)

-'"'~4-ff

~

1.731

v

m,

-

~

VeE= -2V·

:::::;;...

VSE =-lV

. .c. ____

+~

-_.

i
I
-1

10

i
10

i

I
10

Ie (A)

324

Ie (A)

Saturated switching
(inductive load)

characteristics

Fall time
G 4815

+-

I-e--.-

I.
h FE =10

10' f-----+---+--+-+-+-+

clamp= 250V

1/
lOA

--

SA

r-.r-.I:::..

j..--V

I10

Ie (A)

Storage time

Storage time
G-t.

G 4739

)

)

Vc lamp-250V

hFE =10
Vcla~_= 2 SOV

'0

I

i't'"

"

1-: __ Ie
~

~A

-1

t-- SA

L~

-,
10

1-1l-

-

10

,

i
I

I

j

i
8 ISZIlS 1

325

i-

H-

~~

,

I...:
,

3
78

Ie - SA

"FE=100

t:::
=20A~hFE~'ioc=1= - 1=hFE; 20
' 1c='0A

,.-

I- -

-,-

I--

Clamped reverse bias safe operating
area
G IoBI7

Fall time
G 4731.

Ie
)

B

(Al6
Vclamp= 250 v ~

I--j--

"

1
1

I

I

!

f==.'

==---+

1 I
i

I

i

RBE;'2.2 n

~~~OACt,:J=~--:-~

[-1-+--'"

hFE - "

1--' 1_";'_4~ ~:-r-.;
1 i

-I

10

I

- - j- ,
c-il 05A

1r5ct:
leo10A

1
1

-,
10

~.LI
'

i

r

020
i hFE
VSE o-5V

1

I I

10

++--t--+h

-- -

0100
FE

c __

hFE020'

+
I

I I :

f--+-

fTr

f--

ti

-I

10

;I

I

Iii

i

10'

10

Vclamp(Vl

Thermal transient response

Overload safe operating areas

G-J668

Ie
(A)

.,

40

II

I

I

30

t-

,

10 26 : 0,0 1

20

, 1:

1

T

I

10

--+

J

10 .
1
10- L-.L.
10 '
10

'Httt--

I

"
..LILLWll---LLllllIw......;-L.Lj'm':IlL-!.
111..LLlJllli-..L.LJ.JJ.WJ
I

326

"

10

10

?:(sec)

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, HIGH POWER, FAST SWITCHING
The BUT13P is a silicon epitaxial planar NPN Darlington transistor with integrated base-emitter speed-up diode, mounted in SOT -93 plastic package.
It is particularly suitable as output stage in high power, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
VCSO

V CEO
V ESO

Ic
ICM

Is

Ptot
Tstg
Tj

Collector-base voltage (I E = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (t p = 10 ms)
Base current
Total power dissipation Tease ,;;; 25°C
Storage temperature
Junction temperature

600
400
10
28
35
6
150
-65 to 175
175

V
V
V

A
A
A
W
°C
°C

INTERNAL SCHEMATIC DIAGRAM
c
,-------------,
Dl

--

MECHANICAL DATA

R1 TYP.100n
R2 TYP. 350.12
~,

Dimensions in mm

Collecto.r connected to. tab.

(sirn. toTO.:.218ISOT-93

327

3/82

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

°C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Parameter

Test conditions

I cEv *

Collector cutoff
current (V BE = -1.5V)

V CE = 600V
V CE= 600V (T c= 100°C)

I cEO

Collector cutoff
current (I B= 0)

V CE = 400V

lEBO *

Emitter cutoff
current (Ic= 0)

V EB = 2V

V CEO(sust Collector-emitter
sustaining voltage

Ic = 100 mA

V CE(sat) * Collector-emitter
saturation voltage

Ic=
Ic=
Ic=
Ic=

V BE(sat) * Base-emitter
saturation voltage

hFE
VF

DC Current gain

Diode forward voltage

10A
18A
22A
28A

Min. Typ. Max. Unit
100 J.1A
2 mA
1 mA

175 mA

400

0.5A
1.8A
2.2A
5.6A

2
2.5
3
5

V
V
V
V

Ic= 10A
Ic= 18A
Ic= 22A

IB= 0.5A
IB= 1.8A
IB= 2.2A

2.5
3
3.3

V
V
V

Ic= 10A
Ic= 18A

V CE = 5V
V CE = 5V

IF= 22A

328

IB=
IB=
IB=
IB=

V

30
20

-

-

4

V

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

RESISTIVE SWITCHING TIMES

ton

Turn-on time

t,

Storage time

tf

Fall time

Vcc= 250V
Ic= lOA
lSI = 0.5A
V SE(off)= -5V

0.35

0.6

p.s

0.8

1.5

p.s

0.25

0.6

p.s

0.8

1.5

p.s

0.08

0.5

p.s

0.8

1.5

p.s

0.35

0.7

p.s

INDUCTIVE SWITCHING TIMES
t,

Storage time

tf

Fall time

t,

Storage time

tf

Fall time

VClamp= 250V
Ic= lOA
VSE(off)= -5V

lSI = 0.5A

VClamp= 250V
Ic= 20A
VSE(off)= -5V

ISl= 2A

* Pulsed: pulse duration = 300 p.s, duty cycle = 1.5%

329

DC current gain

DC current gain
G 10722

VCE= sv

+125-C

:/
,/

A

+25-C

.

/-40'C

1\\

V
10

.-

~

\

1\

•

-,

4

.

••

10

'0

4

•

8

Ic(A)

4

lCl'

••

4

4

••

10

'8

Ic(A)

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 4725

VCE(sat )
(V)

----- I10

h FE =20

•
h FE ='0

I

/

?--

4

to

••

4

,.

-1

10

10

330

4

.8

10

PI r++

1/, h FE ='0

'I

Base-emitter saturation voltage

Collector-emitter saturation voltage

G - 1.721

G- 4726

VCE(sal )

L

L

lA

SA

IIIU \

(V)

0.1

lOA

1111
1111
1SA , ZOA

VBE(s"l )
(V)

~

h BE =10

VI

f/

'(f

-40'C

r--r

'-

--

-

i,...-

f-'"
........

V

~S'C

r--

'-

10'

10

lZS'C

-I

IB(mAl

10

Base-emitter saturation voltage

10

Collector-base capacitance
G 4728

VBE(sal )
(V)

G

1.11 I
hFE=10/i
I

( pF)

//hFE =2

VII

VI

'('729

CCBO

1111

1

I

zoo

hFE=100 '

1\
\
I\,

..... ~

~

i=""'"

"- r--.

100

r-....
-I

10

10

10

331

~
Vca(V)

Forward voltage

ICEV Temperature
G '731

v
)

VCE=600V
VSE ott =1,6V

~-:- r--~~-

1-~--+2C::5~:-::'C+___
--+-++-t--'_4:+0~''-C~~ - - -

10

~

I---

"

I----t---t---t---t-H-t+t---j-- - -- --

o

I

,
-,

10

-

75

100

(1")

--

iVflamp_250 v
hFE= 50
. VSE=-5V

-

I

Is

Tc ('C)

==

+

---

Is

-

-~

./

101'J.. ....

It ......

125

I

--=:
VCC=250V
hFE =50
VSE=-5V

50

Saturated switching characteristics
(i nductive)
G- 4733

Saturated switching characteristics
(resistive)
G-4732
1'.)

25

;;

T

./

-,

10

~

.'-

~

--

,-====,

.....
-

t---

....

10

IC (Al

-2

-2
1.0

10
10

IC CAl

332

t
Reverse

Fall time (resistive)

base

current vs.

G 473"

(A)

--r---

r-

and

G

IB2

J
Vclamp =250V

Ie

VSE(Off)

037

f-H hFE= so-t:--=rt
H+lvec2S0V -- -. -

UL

c

~--- -~

+--

--1-

,"sE=-sv_

/'

~:::- Ie -20A
hFPl

i"-t+-

Ie-SA t-

VBE"-2~ -----

k:::::: ::;;..-

~-L
--1-----

VBE"-lV

-,

:

-+-

hFE "'00

~~'0A

-,

10

i ___
.-- - mt-~~

t- -

f-

-

--- (--- i-- f- -

hF£"20'

-- - -

-,

I

-1

10

10

o

10

Storage time (inductive)

Storage time (inductive)
G 4738

G "47 3 9

)

Vc lamp=250V

~

"-

==

Ie =20A

hFE "10
Vdamp=250V

I

....

Ie (AJ

Ir" SA

hfE='00
10

le"'0A
~~hFE=10,

-

_ hFE= 20

-...J

"-

-,
10

lOA

-1

10

333

....... SA
..........

Clamped reverse bias safe operating
areas
G- 4735
Ie

Safe operating areas
G

Ie

1
hFE :20
VBEoft ,-5V t- t- tRaE"- 2.2!l t- t- t-

(A )

-

4736

,

(A)

1

10

8
6

,

20

I"

~ERA~5~

N

100~S\

~ms I lms

~W~~~;ION

oe

1

1\

B
6

,

1

10

\1\

8
6

,
1

1

1-Io

100

200

300

400

500

600

-2

10
Vclarrp(V)

Thermal transient response

334

, " 10

"6 B_2

10

2

4 6 8 -J

10

2

468

VeEry)

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT POWER SWITCH

,'"

The BUV20, BUV21 and BUV22 are silicon multiepitaxial plail~r NPf\ltr~hsistor in Jedec
TO-3 metal case, intended for use in switching and linear af:Splication~,'in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CER
VCEX
V CEO
V EBO
Ic
ICM

IB

Ptot

T stg
Tj

Collector-base voltage (I E = 0),
'..
Collector-emitter voltage (R Bq;.,;,,1t:lOh)
Collector-emitter voltage (V~E"" -1:!~,\(J
Collector-emitter voltage {I e';=, 0)
Emitter-base voltage U,(,::~:Pl"i'
'
Collector current"
..
Collector peak curren
Base current . ",;'S0:",,,
Total powerctl~siP~t.l~llIt"case ':;;25°C
Storage tf,lmper,l~tu~",,, .

<, ,.

Junctis>n,Ae~~~~ture

MECHANICAL DATA

:'BUV20

BUV21

BUV22

160V
150V
160V
125V
7V
50A
60A
lOA

250V
240V
250V
200V
7V
40A
50A
8A
250W
-65 to 200°C
200°C

300V
290V
300V
250V
7V
40A
50A
8A

Dimensions in mm

Collectorcormected.to case

335

10/82

THERMAL DATA
Rth j-case

max.

Thermal resistance junction-case

0.7

°C/W

ELECTRICAL CHARACTERISTICS (T case = 2SOC unless otherwise specified)
Parameter

Test conditions

I CEO

Collector cutoff
current (I s = 0)

for BUV20
for BUV21
for BUV22

I CEX

Collector cutoff
current (V BE = -l.SA)

VCE = V CEX
for BUV20
for BUV21
for BUV22
at T case = 12SoC
for BUV20
for BUV21
for BUV22

IESO

Emitter cutoff
current (Ic = 0)

VCE = 100V
VCE = 160V
VCE = 200V

VES = SV

V CEo(susi Collector-emitter
sustaining voltage
(Is = 0)

Ic = 200mA L = 2SmH
for BUV20
for BUV21
for BUV22

V(SR)ES;; Emitter-base
breakdown voltage
(lc = 0)

IE = SOmA

V CE(sat) * Collector-emitter
saturation voltage

for BUV20
Ic =2SA
Ic = SOA
for BUV21
Ic = 12A
Ic = 2SA
for BUV22
Ic = lOA
Ic = 20A

VSE(sat) * Base-emitter
saturation voltage

Min. Typ. Max. Unit

for BUV20
Ic =50A
for BUV21
Ic =25A
for BUV22
Ic =40A

336

3
3
3

mA
mA
mA

3
3
3

mA
mA
mA

12
12
12

mA
mA
mA

1

mA

12S
200
2S0

V
V
V

7

V

Is = 2.SA
Is =SA

0.3
0.7

0.6
1.2

V
V

Is = 1.2A
Is =3A

0.2
0.9

0.6
1.S

V
V

Is = lA
IB = 2.SA

0.2
O.S

1
1.5

V
V

Is =5A

1.4

2

V

I s =3A

1.2

1.5

V

Is=4A

1.2

1.5

V

ELECTRICAL CHARACTERISTICS (continued)
Parameter
hFE *

fT
ton

tf

ts

Test conditions

DC current gain

for BUV20
VeE = 2V
VeE =4V
for BUV21
VeE = 2V
VeE = 4V
for BUV22
VeE = 4V
VeE = 4V

Transition frequency
Turn-on time

Fall time

for BUV20
Ie = 50A
for BUV21
Ie = 25A
for BUV22
Ie = 20A

Storage time

* Pulsed. pulse duration = 300

for BUV20
Ie = 50A
for BUV21
Ie = 25A
for BUV22
Ie = 20A
fJ.S,

Ie = 25A
Ie = 50A

20
10

60

-

Ie = 12A
IB = 25A

20
10

60

-

Ie = 10A
Ie = 20A

20
10

60

-

VeE = 15V Ie =2A
f = 10MHz
for BUV20
Ie = 50A
for BUV21
Ie = 25A
for BUV22
Ie = 20A

MHz

8

IB =5A

1.5

Ils

IB =3A

1.2

Ils

IB = 2.5A

1.3

IlS

IBI =-IB2 =5A

0.3

Ils

I Bl =-1 B2 =3A

0.4

Ils

IBI =-IB2=2.5A

0.5

Ils

IBI =-IB2 =5A

1.2

Ils

IBI =-I B2 =3A

1.8

IlS

IBI =-IB2=2.5A

2

Ils

duty cycle';;; 2%.

337

Min. Typ. Max. Unit

MULTIEPITAXIAL MESA NPN

POWE R SWI TCH
~fJ~P

The BUV23, BUV24 and BUV25 are silicon multiepitaxial rrl~f~:~~PN '~pnsistors in Jedec
TO-3 metal case, intended for use in power switching
't~;'!Iilftary and industrial
equipments.

ABSOLUTE MAXIMUM RATINGS
V C80
VCER

VCEX
V CEO
V E80

Ic
ICM

18
Ptot
Tst9

Collector-base voltate (I E = 0)
Collector -emitter voltage (R
Collector-emitter voltage (V
Collector--emitter volt
Emitter-base voltage"
Collector current
Collector peals. c'
Base cu rrent
Total pow',
Stor

400V
390V
400V
325V
7V
30A
40A
6A

,I

Tj

INTERN

BUV24

BUV25

450V
440V
450V
400V
7V
20A
30A
4A
250W
-65 to 200°C
200°C

500V
500V
500V
500V
7V
15A
20A
3A

EMATIC DIAGR::~~{
E

MECHANICAL DATA

10/82

Dimensions in mm

338

THERMAL DATA
R!h j-case

Thermal resistance junction-case

max.

0.7

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

I CEO

Collector cutoff
current (1 6 = 0)

VCE = 260V for BUV23
VCE = 320V for BUV24
VCE = 400V for BUV25

3
3
3

mA
mA
mA

I CEX

Collector cutoff
current (V BE =-1.5V)

VCE = VCEX
T case = 125°C
VCE=VCEX

3

mA

12

mA

1

mA

lEBO

Emitter cutoff
current (I C = 0)

VCE(sa!) * Collector-emitter
saturation voltage

V BE(sa!) * Base-emitter
saturation voltage

V EB = 5V
for BUV23
Ic =8A
Ic = 16A
for BUV24
Ic =6A
Ic = 12A
for BUV25
Ic =4A
Ic =8A
for BUV23
Ic = 16A
for BUV24
Ic = 12A
for BUV25
Ic =8A

V CEo(susi Collector-emitter
sustaining voltage

Ic = 200mA

V(BR)EB~ Emitter-base
breakdown voltage
(lc = 0)

IE = 50mA

hFE *

VCE = 4V
Ie. =8A
Ic = 16A
VCE = 4V
Ic =6A
Ic = 12A
VCE = 4V
Ic =4A
Ic =8A

DC current gain

339

16 = 1.6A
IB = 3.2A

0.2
0.35

0.8
1

V
V

IB = 1.2A
IB = 2.4A

0.15
0.3

0.6
1

V
V

IB = 0.8A
IB = 1.6A

0.2
0.6

0.6
1

V
V

IB = 3.2A

1.15

1.5

V

I B =2.4A

1

1.15

V

IB = 1.6A
L = 25mH
for BUV23
for BUV24
for BUV25

1.2

1.5

V

325
400
500

V
V
V

7

V

for BUV23
15
8

60

15
8

60

15
8

60

-

for BUV24
-

-

for BUV25

-

ELECTRICAL CHARACTERISTICS (continued)
Parameter
fT

Transition frequency

ton

Turn-on time

tf

ts

Fall time

Storage time

Test conditions
VeE = 15V
f = 10MHz
for BUV23
Ie = 16A
for BUV24
Ie = 12A
for BUV25
Ie =8A
for BUV23
Ie = 16A; lSI
for BUV24
Ie = 12A; lSI
for BUV25
Ie =8A; lSI
for BUV23
Ie = 16A; lSI
for BUV24
Ie = 12A; lSI
for BUV25
Ie =8A; lSI

* Pulsed: pulse duration = 300 IlS, duty cycle";;;; 2%.

340

Min. Typ. Max. Unit

Ie =2A

MHz

8
Is = 3.2A

0.55

1.3

Ils

Is = 2.4A

0.6

1.6

IlS

Is = 1.6A

0.9

1.8

IlS

= -ls2 = 3.2A

0.26

1.2

115

= -ls2 = 2.4A

0.6

1.4

115

= -ls2 = 1.6A

0.9

1.6

IlS

= -ls2 = 3.2A

1.7

2.5

Ils

= -ls2 = 2.4A

1.5

3

IlS

= -ls2 = 1.6A

3.5

5

Ils

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
,-

The BUV46 is a silicon multiepitaxial mesa NPN transistor in Jede(: TO-220 plastic package,
intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
V CES

VCEX
V CEO
V ESO

Ic
Is
Ptot
T stg
Tj

Collector-emitter voltage (V sEf:fQ~
"
Collector-emitter voltage (V~E= }.~Yl
Collector-emitter volt~ge ~JE!S' •. ?),.,'• •,.
Emitter-base voltage'.~~i'Z.:f~),·\ .• "
Collector c u r r e n t ' "
Base current
Total pO~7r d'l~~iP~f6nat Tease < 25°C

i,\r;:;•.•• "'{

Storaget~!!t~!ur~'"

J un9,tIWn·t'J.m~IIt~u re

MECHANICAL DATA

850
850
400
7
5

3
85
-65 to 175
175

V
V
V
V
A
A
W
°C
°C

Dimensions in mm

Collector connected to tab.
10.4m.l>1

TO-220

341

10/82

THERMAL DATA
Rth j-ease

max.

Thermal resistance junction-case

°C/W

1.76

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

ICER

IESO

Test conditions

Min. Typ. Max. Unit

Collector cutoff
current (V SE= 0)

VCE = 850V
VCE = 850V Tease = 125°C

100
1

J1A

Collector cutoff
current (R SE = 1On)

VCE = 850V
VCE = 850V T case = 125°C

300
2

J1A

Emitter cutoff
current (I C = 0)

VES = 7V

1

mA

400

mA

mA

V

V CEO (susi Collector-emitter
sustaining voltage

Ic = 100mA

VCE (sat) * Collector-emitter
saturation voltage

Ic = 2.5A
Ic = 3.5A

Is = 0.5A
Is = 0.7A

1.5
5

V
V

VSE(sat) * Base-emitter
saturation voltage

Ic = 2.5A

Is = 0.5A

1.3

V

1

J1S

3

J1S

0.8

J1S

ton

Turn-time

ts

Storage time

tf

Fall time

Ic = 2.5A
Vec = 150V
lSI = -ls2 = 0.5 A

* Pulsed: pulse duration = 300 j.tS, duty cycle = 2%.

342

MUlTIEPITAXIAl MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUV47 is silicon multiepitaxial mesa NPN transistor in SOT -93 plastic package. It is
intended for high voltage, fast switching and industrial applications.

ABSOLUTE MAXIMUM RATINGS
VCSO

VCEO
VEBO
Ic
ICM

Is
IBM

Ptot
Tstg
Tj

Collector-base voltage (I E 0)
Collector-emitter voltage (I s = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peark currentjtp« 5trts,}
Base c u r r e n t ' " " ,
'
Base peak current.{~ <5I)1s.) ,
Total power dissiPliItio,:, df~9~\~~;l~~I~

The BUV48 is silicon multiepitaxial mesa NPN transistor in
package. It is
intended for high voltage, high current, fast switching and i~<:lushi~£2~pPII~tions.

VCSO
V CEO
VESO
Ic
ICM
Is
ISM

Collector-base voltage (IE =
Collector-emitter voltage (I
Emitter-base voltage (lc
Collector currem
Collector peak

Ptot
T stg

Total poVlte,l;
Stor'

Tj

Jun

~::: ~~:~~~r~n~~~$:~;,L':;1i

ipa't},pn at Tease :s;;; 25°C
. re';
ure

BUV48

BIV48A

850V
400V

1000V
450V

7V
15A
30A
4A
20A
150W
175°C
-65 to 175°C

INTERN.t\~;;;
iZ~:

MECHANICAL DATA

10/82

Dimensions in mm

346

THERMAL DATA
Rth j-ease

max.

Thermal resistance junction-case

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICEX

Collector cutoff
current (V SE = 2.5V)

VCE = Vcso
VCE=VCSO Tease = 125°C

0.2
2

mA
mA

IESO

Emitter cutoff
current (I C = 0)

VES = 5V

1

mA

ICER

Collector cutoff
current (R SE = 10n)

VCE=VCSO
VCE=VCSO Tease = 125°C

0.5
4

rnA
rnA

V CEo(susi Collector-emitter
sustaining voltage
(Is = 0)

Ic = 200mA

V ESO

IE = 0.05A

Emitter-base
voltage (lc = 0)

V CE(sat) * Collector-emitter
saturation voltage

Ic = lOA
Ic = SA
Ic = 15A
Ic = 12A

V SE(sat) * Base--emitter
saturation voltage

Ic = lOA
Ic = SA

ton

Turn--on time

t,

Storage time

tf

Fall time

L = 25mH
for BUV48
for BUV48A

V
V
30

V

1.5

V

1.5

V

5

V

5

V

1.6

V

1.6

V

0.55

1

Ils

1.5

3

Ils

0.3

O.S

IlS

7

Is = 2A
for BUV48
Is = 1.6A
for BUV48A
Is = 3A
for BUV48
Is=2.4A
for BUV48A
Is = 2A
for BUV48
Is = 1.6A
for BUV48A

Vcc = 150V VSE = -6V
RS2 = 1.5; Ic = lOA (BUV4S)
Ic = SA (BUV4SA)
lSI = -ls2 = 2A (BUV4S)
lSI = -IS2 = 1.6A (BUV4SA)

* Pulsed: pulse duration = 300 IlS duty cycle = 1.5%.
347

400
450

MULTI EPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUWll is silicon multiepitaxial mesa NPN transistors in
intended for high voltage, fast switching industrial applicati n .

ABSOLUTE MAXIMUM RATINGS
V CES

VCEO
Ic
ICM
IB
IBM

Ptot

Tstg
Tj

INTER

Collector-emitter voltage (V B
Collector-emitter voltage (I
Collector current
Collector peak curre
Base current
Base peak curre
Total power
Storage
Junct"

850
400
5
10
2
3
100
-65 to 175
175

°C
°C

ATIC DIAGRAM

MECHANICAL DATA

10/82

V
V
A
A
A
A
W

Dimensions in mm

348

THERMAL DATA
Rth j-case

Thermal resistance junction-case

max.

1.5

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

ICES

Collector cutoff
current (V BE = 0)

VCE = 850V
VCE = 850V Tj = 125°C

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 9V

Min. Typ. Max. Unit
1
2

mA
mA

10

mA

V

400

V CEO (susi Collector-emitter
sustaining voltage

Ic = 100mA

L = 25mH

VCE (sat) * Collector-emitter
saturation voltage

Ic =3A

IB = 0.6A

1.5

V

V BE (sat) * Base-emitter
saturation voltage

Ic =3A

IB = 0.6A

1.4

V

1

}J.s

4

}J.s

0.8

}J.s

ton

Turn-on time

ts

Storage time

tf

Fall time

Ic =3A
IB2 = -0.6A

IB1 = 0.6A

* Pulsed: pulse duration = 300 IlS, duty cycle = 1.5%.

349

-

Safe operating areas

i

--

I

ICMAX PULSED

I

10

PULSE OPERATlON*;

IC MAX CONT.
I

i

/\,

I

Ii

I

,

I D.C

//"\

10/-ls100/-ls
lms
5ms

8
6

*FOR SINGLE NON
REPETITIVE PULSE
4

10

350

i\

"

10-'

6 8

,

"

\

OPERATION

6

8

4

10 2

6

8

VCE.(V)

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The BUW12 and BUW12A are silicon multiepitaxial mesa NPN transistors ihSOT-93 plastic
package, particularly intended for high voltage, fast switching industrin,

?

BUW12A

1000V
450V
8A
20A
4A
6A
125W
-65 to 175°C
175°C

850V
400V

INTERNALt:r~I~··DIAG~~:
MECHANICAL DATA

Dimensions in mm

CoJlectorconnected to tab.

(sim. to. TQ-218) SOT"93

351

10/82

THERMAL DATA
Rth j-case

max.

Thermal resistance junction-case

1.2

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)

Parameter

ICES

lEBO

Test conditions

Collector cutoff
current (V BE = 0)

VCE = VCES

Emitter cutoff
current (I C = 0)

V EB = 9V

VCE = VCES

Min. Typ. Max. Unit

Tj = 125°C

1

mA

3

mA

10

mA

V CEo(susi Collector-emitter
sustaining voltage

Ic = 100mA

L = 25mH

V CE(sat) * Collector-emitter
saturation voltage

Ic =6A

IB = 1.2A

1.5

V

VBE(sat) * Base emitter
saturation voltage

Ic =6A

IB = 1.2A

1.5

V

1

!1 S

4

!1 S

0.8

!1s

ton

Turn-on time

ts

Storage time

tf

Fall time

Ic = 6A
IB2 = 1.2A

IBI = 1.2A

* Pulsed: pulse duration = 300 J.1S, duty cycle = 1.5%.

352

400

V

Safe operating areas

ICMAX CONT.
1ms

1\

\

I
F - D. C.OPERA TION

I I
5ms

'\

I

10 2

III

"

I'

L-~L-~-LL6UB~---L-L~4-L6UUB~---L-L~4LL6LUB~
10

353

10 2

MULTIEPITAXIAL MESA PNP
HIGH VOLTAGE POWER SWITCH
The BUW 32 is a silicon multipitaxial mesa PNP transistor in Jedec TO-3 metal case. It is intended for high voltage. fast switching and industrial applications. The complementary N PN type is the BUW 35.

ABSOLUTE MAXIMUM RATINGS
VCES
V CEO

VEBO
Ie

IB
Ptot
Tstg
Tj

Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (I B= 0)
Emitter·base voltage (I e= 0)
Collector current
Base current
Total power dissipation at T case:S25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

V
A

-5

A

V

125
W
-65 to 200°C
200
°C

DIAGR~~:

MECHANICAL DATA

5/80

V

-450
-400
-7
-10

Dimensions in mm

354

THERMAL DATA

F\h j-case

Thermal resistance junction-case

max

1.4

°C!W

ELECTR I CAL CHARACTERISTI CS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

ICES

Collector cutoff
current (V BE=O)

V CE=-450V

ICES

Collector cutoff
current (I c=O)

lEBO

Emitter cutoff
current (I c = 0)

V CEO (sus) ·Collector-emitter
sustaining voltage
(IB=O)
VCE(sat)

•

VBE(Sat)

•

Min. Typ. Max.

Unit

-500

itA

V CE=-450V
T case=125°C

-3

mA

V Es=-7V

-1

mA

Ic =-100mA

-400

V

Collector -emitter
saturation voltage

Ic =-5A

I B =-1A

-1.5

V

Base-emitter
saturation voltage

Ic =-5A

I B =-1A

-1.5

V

hFE

DC current gain

Ic =-1A

V cE=-5V

ton

Turn-on time

Ic =-5A
V cc=-250V

I B =-1A

Ic =-5A
I B1 =-1A

V cc=-250V
I B2 =2A

•

ts

Storage time

tf

Fall time

• Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%

355

15

-

0.75

I1S

3

I1S

0.8

I1S

G- 3658

-IC

Safe operating areas

(A )

PUL :x:.'
5

RA"TIW

f1o!J

s
l00iJS
lms 10ms

1"'-

10

c--'

-

I-DC,OPERATON

- -i

f---

+-

-

----

r\-

_..

~

1=

I---

t-

I

10-'

+--

4

l-

III

• FOR SINGLE NON
REPETITIVE PLlSE

~

I

1\,\

I

f--.-

10- 2
1

10

10

Derating curves

2

10

400

3

I
-VCE (V)

Transient thermal response
G 3665

l'

G-J668

p

i

f--i-i.

,

I

'

,

,\
}5

... ,'
"

l""ii ~
,

1

2V

lells :5
21Bl >1-I B2 1> IBl

tp =adjusted for
nominal Ie
Ree =adjusted for
IB2

Vctamp

358

./

"-

r--- t---

6

-Ie (Al

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUW 34, BUW 35 and BUW 36 are silicon multiepitaxial mesa NPN transistors in
Jedec TO-3 metal case. They are intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
VCES
V CEO

V EBO
Ic
ICM

IB
P tot
Tst9

Tj

BUW34 BUW35

Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case :::;25°C
Storage temperature
. Junction temperature

INTERNAL SCHEMATIC

500V
400V

BUW36

800V
900V
400V
450V
7V
10A
15A
5A
125W
-65 to 200°C
200°C

DIAGR~~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case
6.2ma~

TO-3

359

5/80

TH ERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1.4

°C/W

ELECTRICAL CHARACTERISTICS(T case= 25°C unless otherwise specified)
Parameter

ICES

lEBO

Collector cutoff
current (V BE=O)

Emitter cutoff
current (I C= 0)

for BUW34
for BUW35
for BUW36
T case=125°C
for BUW34
for BUW35
for BUW36

V CE=500V
V cE=800V
V cE=900V

500
500
500

itA
itA
itA

V cE=500V
V cE=800V
V cE=900V

3
3
3

mA
mA
mA

1

mA

=100mA
BUW34
BUW35
BUW36

Ic
for
for
for

V CE (sat) '" Collector-emitter
saturation voltage

All types
for BUW35
for BUW36
All types
for BUW35
for BUW36

'"

Unit

V EB=7V

V CEO (sus) "'Collector-emitter
sustaining voltage
(IB=O)

VBE(Sat) '" Base-emitter
saturation voltage

Min. Typ. Max.

Test conditions

400
400
450
Ic
IB
Ic
IB
Ic
IB

=5A
=1A
=8A
=2.5A
=8A
=2:5A

1.5

V

1.5

V

3

V

Ic
IB
Ic
IB
Ic
IB

=5A
=1A
=8A
=2.5A
=8A
=2.5A

1.5

V

1.8

V

1.8

V

DC current gain

Ic =1A

V cE=5V

ton

Turn-on time

Ic =5A
I B1 =1A

V cc=250V

ts

Storage time

tf

Fall time

Ic =5A
I B1 =1A

V cc=250V
I B2 =-1A

hFE

'" Pulsed: pulse duration = 300 ItS, duty cycle = 1.5%

360

V
V
V

15

-

0.75

IlS

3

Its

0.8

IlS

G- 3688

Safe operating areas

Ic

8

(A)

6
4

IC MAX PULSED

l

10

till

*PULSE OPERATION

f",.

111\1

Ie MAX CONTINUOUS

O}JS

. ~JOO
}.Is
lms

10ms
\

II II

\

\

DC OPERATION

I'
* FOR SINGLE NON
REPETITIVE PULSE

10-1

"-

['\.'\

8

6

,

BUW36
BUW34 - BUW35-

10- 2
6

4

8

10

6

B

VeE (V )

Transient thermal response

Derating curves
G 3665

G-.166B

I
I

~~

' - , - c-- '--

,

~ ......... %<~/;
I

.........

I

I'-.. <'0,

....... t--.,

i'..

0.5

01'-..

...... '(s'iVoq
1.tJ

~.I

r-...

r--.:~;;;-_

~

<'0,_ -

l- f-- ..

o

f-{ 'i..

".

50

100

150

"

10-;O'-:",-J-I..J.J..IJWl
lO-:.,..J...J..J.J..U.IlI.
lO-::.3...L..!..l..U.J..IlI.,O-'-.,..L.L.l..U.J..IlI.,c"""..L.L?;'Ll(sWllec)

Tease ('e)

361

DC current gain

Collector-emitter saturation voltage
6-3691

G 3693

VCE(sat)

-

---

---

10

(V)

r--...

hFE=5

Tease :: 125°C

I-- ..I-- I-+-"

25'C'"'

!'...: ~

-30'C

r---.. 1"- ~l'
Tease :: - 30 0 e

25'C

0.5

}

125'e-H

r)

VCE =5V

A./

V

~
6

6

,

B

6
B
Ie (A)

IC (A)

Collector-emitter saturation voltage

Base-emitter saturation voltage
G 3689

G 3818

VCE(sat )

VSE(sat )
(V)

(V)

hFE=5

4
case=-30°C

-

-

~

1----

0.5
6A
A

./

25Y

f---

IC =SA

L..... ~

~

125'C

I--

4A
3A\i

\.

2A

1\
lA'-.

No

o
0.5

1.5

6

10-'

IS(A)

362

B

6

B

Ic(A)

Saturated switching characteristics

Saturated switching characteristics
G 3690

t
8--(pS)

s

r--

VCC ; 250V
hFE ;5
162 ;-1 61

z

4

r--.....

:::---"15
I
f - - - - - - - 1--......

ts

"-

8

•

"
-

tf

z

-

~V

10-'

....,

tf

./
Ion

.---........

I"'-

/"

j

10

4

Ie (A)

Clamped reverse bias
safe operating areas

Clamped Es/b test circuit
G 3657

Ie
(A ) f---

BUW34-35

--

H8UW36

--

40V

[

[
I

i

I

500 pH
TEST CONDITIONS:

sv,. [-vss [ ,.

r---

r- ---

2IS,>[-IS2[>ISl

f------- ---- I---

Bi

10-'
100

200

2V

Ic/IS;S

f - - - - - - - '-W34

BUrr

500

-1'

~

/

/

...... 1'-

"/

4

r--...

z

z

VCC ; 250V
hFE ;5
162 ;-181
Tease-= 125 D C

•

-

4

G 369

I
(ps )

tp =adjustl!'d for
nomInal Ie
RBe = adJuste-d tor

f-

IS2

VCE(damp) (V)

363

MULTIEPITAXIAL MESA PNP

HIGH VOLTAGE POWER SWITCH
The BUW42 is a silicon multiepitaxial mesa PNP transistor in Jedec TO-3I11egf~:fl' intended
in fast switching applications for high output powers. The complernli\~t';j~/

INTERNAL

-450
-400
-7
-15
-30
-10
150
-65 to 175
175

V
V
V

A
A
A
W
°C
°C

y\~~fIC DIAGR~~,
~~t

MECHANICAL DATA

Dimensions in mm

,Collector connected to case
1

[

,I

~_

mal(

,

",7m,",,!']?,
91

i
TO-3

10/82

364

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max.

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICES

lEBO

Collector cutoff
current (V BE = 0)

Emitter cutoff
current (I C = 0)

= 25°C unless otherwise specified)

Test conditions

= -7V

= -100mA

V CEO(sus) Collector-emitter
sustaining voltage
(lB = 0)

Ic

VCE(sat) * Collector-emitter
saturation voltage

Ic = -10A
IB
Ic = -15A
IB
Tease = 100°C
Ic = -10A
IB
Ic = -10A
IB
Tease = 100°C
IB
Ic = -10A

V BE(sat) * Base-emitter
saturation voltage

hFE *

DC current gain

ton

Turn-on time

ts

Storage time

tf

Fall time

Min. Typ. Max. Unit

VCE = -450V
VCE = -450V
Tease = 100°C
V EB

Ic
Ic

= -5A
= -10A

°C/W

* Pulsed: pulse duration = 200 /lS, duty cycle = 1.5%.

mA

-4

mA

-1

mA

-400

V

= -2A
= -3A

-1.5
-5

V
V

= -2A

-2.5

V

= -2A

-1.6

V

= -2A

-1.6

V

60
30

-

1

/ls

4

/lS

VCE
VCE

Resistive load
Vcc = -250V
Ic = -10A
lSI = -Is = -2A

-1

= -2V
= -2V

12
6

0.7

-

/ls

I;
il

i~

IlII

II.

!

I1

365

Ii(I

I

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE, HIGH CURRENT POWER SWITCH
The BUW 44, BUW 45 and BUW 46 are multiepitaxial mesa NPN transistors in Jedec
TO-3 metal case, intended in fast switching applications for high output powers.

ABSOLUTE MAXIMUM RATINGS
V CES
V CEO
V EBO
Ic
ICM

IB
Ptot

Tstg
Tj

BUW44

Collector-emitter voltage (V BE=" 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case::;25°C
Storage temperature
J unction temperature

500V
400V

BUW45 BUW46

800V
900V
400V
450V
7V
15A
30A
10A
175W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGR:~:

MECHANICAL DATA

5/80

Dimensions in mm

366

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1

°C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter
ICES

lEBO

Collector cutoff
current (V BE=O)

Emitter cutoff
current (I c= 0)

Test conditions
for BUW44
for BUW45
for BUW46
T case= 125°C
for BUW44
for BUW45
for BUW46

1 rnA

V Es=7V

VeE (sat) * Collector-emitter
saturation voltage

for BUW44
Ie =10A
I B =2A
Ie =6A
I B =1A
for BUW45 and BUW46
Ie =10A
I B =2A
Ie =7A
I B =1A
for
Ie
Ie
for
. Ic
Ie

BUW44
=10A
I B =2A
=6A
I B =1A
BUW45 and BUW46
=10A
I B =2A
=7A
I B =1A

367

IlA
IlA
IlA

3 rnA
3 rnA
3 rnA

V CE=500V
V crBOOV
V cr900V

Ie =100mA
for BUW44
for BUW45
for BUW46

Base-emitter
saturation voltage

500
500
500

V CE=500V
V crBOOV
V cr900V

V CEO (SUs)*Coliector-emitter
sustaining voltage

VBE(Sat) *

Min. Typ. Max. Unit

400
400
450

V
V
V

1.5

V
V

1.5
1.5

V
V

1.B
1.4

V
V

1.B
1.4

V
V

3

ELECTRI CAL CHARACTERISTICS (continued)
Parameter
ton

Turn-on time

ts

Storage time

t,

Fall time

Test conditions

Min. Typ. Max.

I c =10A
V cc=250V

I Bl =2A

I c =10A
I B2 =-2A

I Bl =2A
V cc=250V

* Pulsed: pulse duration = 300 I1S, duty cycle =

Unit

·0.75

I1S

3

I1S

0.8

I1S

1.5%

G 3862

Safe operating areas

Ie

8

(A)

6

PERA I

Ie MAX PULSED "P
Ie MAX eONT.

."

10

I~

~

100
~m5

ms
2

10,us

~

,,

De OPERATION
8
6
4

2

10-1

1\
"FOR SINGLE NON
RI PETITIVE P LSE

8

1\

6
4

BUW44-45- IaUW46

2

4

468

6 8

10

368

10 3

2468

VeE (V )

Thermal transient response

DC current gain

Collector-emitter saturation voltage

Collector-emitter saturation voltage
C. 3823

G-J824

VCE(sal)

VCE(sa\)

(V)

(V)

,

hFE =5

-

, I

I

1\

Tease =125°C

25'C\
-30'(
0.5

\

t.,

"'5A
12A

I

OA

IT

f\.

8
SA

-,

2

4A

~
2
,

68

1

6 8

"

....

I'...

"

I-..

Ie (A)

10

369

Base-emitter saturation voltage

Saturated switching
characteristics

G - 3825

( V)

Tease

II I
Vee =250V
hFE =5
IB2 =-I B1

10
8

V

10

i-

V~

I- 25'

.......

I-

V,25'e

V

~

1-1-

0,5

G-J831

I
()'o)

/I
I
II
III
II
:::-30 oS
V

11

VSE(sat)

8

.........
hFE =5

'I
If

2

I

~

L"

1

,

6 8

,

6 8

,

10

1

6 8

6

Ie (A)

10"

Clamped reverse bias
safe operating·. areas

8

4

6 8

1

2

10

Ie (A)

Clamped EsA> test circuit
G J832

1, 2

10
8

40V

~500

I'H

TEST CONDITIONS·

BUW45
BUW46

5V;.

I-vss I .. 2V

lUT.

Ie / I B =5
2IS1>1-IS21>161

IP

for
nominal Ie
RBS = adjusted for
162

BUW44
2

s-

I
I
100

Vcl amp

= adjusted

200

450

750 VCE(clamp)(V)

370

3649

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 10 is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
Vcso
V CEX
VCEO
V ESO
Ic
ICM
Is
Ptot
Tstg
Tj

Collector-base voltage (I E= 0)
Collector-emitter voltage (V sE=-1.5V)
Collector-emitter voltage (I s= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case :0:25 °C
Stprage temperature
Junction temperature

160
160
125
7
25
30
5
150
-65 to 200
200

V
V
V
V
A
A
A

W
°C
°C

INTERNAL SCHEMATIC DIAGR~4:

MECHANICAL DATA

Dimensions in mm

Collector Ilohnected to case

371

5/80

THERMAL DATA

F\h j-case

Thermal resistance junction-case

max

1 .1 7

°C /W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter
IcEO

Collector cutoff
current (I B=O)

I cEX

Collector cutoff
current

Test conditions

Min. Typ. Max.

Unit

1.5

mA

V CE=100V
-

Emitter cutoff
current ( I C= 0)

lEBO

. V CE=160V
V B~-1.5V
Tcase=125°C
V CE=160V- V B~-1.5V

--

1.5

mA
mA

6
1

V EB=5V

mA

V CEO (sus) ·Collector-emitter
sustaining voltage

Ic =200mA

125

V

V EBO

IE =50mA

7

V

Emitter-base
voltage
( Ic=O)

VCE(sat)

• Coli ecto r-em itter

VBE(Sat)

•

saturation voltage

Ic =10A
Ic =20A

IB =1A
IB =2A

0.3 0.6
0.7 1.2

V
V

Base-emitter
saturation voltage

Ic =20A

IB =2A

1.6

2

V

DC current gain

Ic =10A
Ic =20A

V CE=2V
V CE=4V

20
10

60

-

Isib

Second breakdown
collector current

V cE =30V
V CE=48V

t =1s
t =1s

5
1

A
A

fr

Transition frequency

Ic =1A
f =10MHz

V CE=15V

8

MHz

hFE

•

372

ELECTRICAL CHARACTERISTICS (continued)
Parameter
ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Ic =20A
Vcc=30V

Qamped EsA>
Collector current
(fig. 1)

1.5

J,lS

0.6

1.2

J,lS

0.15

0.3

J,lS

I B1=-1 sr2A

20

V c1am8=125V
=5 OJ,lH

A

L

=300 J,lS, duty cycle :s; 2%

Derating curves

Safe operating areas

G 3665

G-4040

Ie
(A)

'CMAX CON

10

1 1

- r-

PULSE OPERATION"

",I'-.

10l'S
/--1001'5
,r-lms

!

~10ms

11

I

I

""
I

1111

FOR SINGLE NON
REPETITIVE PULSE

r-.... ~ (/'-tllt
I'~ D
'h. ............

--I- e- rI
I

'" . . . .D-S"'~:::...
ff

- r-

0.5

"~ I-

I100

~

Thermal transient response

DC current gain
G 10041

10 . . . . . .

I~r/

10

10- '

==
- t=
-

•

6
4

~

-......;:

I- 125'CI- 25'C
-3O"C

VCE ,4V

10-3 LLL4Wl"llL...l2...Llillllll....-!-l-illl!ll----!--J..l.lJJ!ll----LJ..J..J~
10- 5

10

10-1,

Collector-emitter saturation voltage

Collector-emitter. saturation voltage

G-4042

VCE(sat)

G 4043

VCE(sat )

(V)

(V )

I.S

hFE ,10

iT
30"C
2S'C
12S'C

1,/

[1;:= 2SA

1\

20A
ISA"'Io...

;....

rvy,

O.S

,,-'8

~
SA

L..::

o
o

10

374

Base-emitter saturation voltage

r

VBE(s.t )
(V)

G 4045

(tl
(",.)

"1- -

hFE ~10

I--I--I---

VCC~30V

7rT

hFE :10

I

TC .25'C

f--f---

I

5

f---

'"-

/

-

D
---

-;;-

-

-./

I--

i-"

v-

-

t-.. . .

:: -30'C
- 25'C
125'C

I-

./

c---

J......--"
0,5

Saturated switching characteristics

G 4044

/'

:;7

1-j,.-

ton

1-1--

.....

I
10-'

10

~
10

IC(A)

Saturated switching characteristics

Ie (Al

Transition frequency

G 4046

(tl
,,",sl

VCC ~30V
hFE ~10
Te ~125'C

..........

G 4047

fT

f==

(MHz)

f--f--f---

t--... r--,.....

-..........

J...,..

20

./

V

~

V

~

.

I\.

tun

~

I--10-'

....
....

.........tf

10

--

VCE~15V

f:l0 MHz

I

I
6

10

IC (Al

10- 1

375

8

6

8

Ie

(Al

Oamped reverse bias safe
operating area

Collector-base capacitance
G 1,048
f--~

Ie
(A)

""'I-...
10

f' . . . .
I

See circuit

0-1

10
10

of fig.t

L125

10

10'

Fig. 1 - Oamped EsA> test circuit

Fig. 2 - Switching times test circuit
(resistive load)

TEST CONDITIONS:
TEST CONDITIONS
7V",

Vee: 30V

I-vss I ~ 2v

R _ Vce

Ie/Is 010

C-

RBB~

-VCE(s_t)
IC

I NPUT PULSE
pulse width :IO}.Js
SOns

t P :: adjusted for
nomina!

10' VCE(clamp) (V)

Ie

trltf~

In

duty cycte =1 %

376

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 11 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
250
V
250
V
200
V
7
V
20
A
25
A
4
A
150
W
-65 to 200°C
200
°C

Collector-base voltage ( I E= 0)
Collector-emitter voltage (V BE=-1.5V)
COllector-emitter voltage (I B=O)
Emitter-base voltage (I c=O)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T casu:S25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-3

377

5/80

J

.

THERMAL DATA

f\h j-case

max

Thermal resistance junction-case

1.17

°C /W

ELECTRICAL CHARACTERISTICS(T case =25OCunless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

IcEO

Collector cutoff
current (I B=O)

V CE=160V

1.5

mA

IcEX

Collector cutoff
current

V Br-1.5V
V cE =250V
V cE =250V
V Br-1.5V
T case=125°C

1.5
6

mA
mA

lEBO

Emitter cutoff
current ( I C= 0)

V EB=5V

1

mA

VCEO (sus) ·Collector-emltter
sustaining voltage

Ic =200mA

200

V

V EBO

IE =50mA

7

V

VCE(sat)

VBE(Sat)
h FE •

Emitter-base
voltage
(lc=O)

• Collector-emitter
•

saturation voltage

Ic =6A
Ic =12A

IB =0.6A
IB =1.5A

0.3 0.6
0.6 1.5

V

Base-emitter
saturation voltage

Ic =12A

IB =1.5A

1.3 1.5

V

DC current gain

Ic =6A
Ic =12A

V CE=2V
V cE=4V

20
10

Isib

Second breakdown
collector current

V cE=30V
V CE=140V

t =1s
t =1s

5
0.15

fT

Transition frequency

Ic =1A
f =10MHz

V CE=15V

8

378

60

V

-

A
A
MHz

ELECTRICAL CHARACTERISTICS(continued)
Parameter
ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Test conditions
Ic =12A
V cc=150V

I

Ic =12A
I B2 =-1.5A

Fall time
(fig. 2)
Clamped Estb
Collector current
(fig. 1)

* Pulsed: pulse duration

B1

Min. Typ. Max.

Unit

0.3

1

~s

1.2

1.8

~s

0.24

0.4

~s

=1.5A

I B1 =1.5A
V cc=150V

12

V c1am8=200V
L =5 O~H

A

=300 ~s, duty cycle :s; 2%

Derating curves

Safe operating areas

(', 3665

G 4012

Ie
(A )

i

PULSE OP~RATION*

"-

Ie MAX CONT

10

8

6 f - - f- DC OPERATION

,

2

IIII

'"

fi- I~f"

lDfJs

+

f- -

--

I

--f-

lms

lOms

f-

~~

\

~

'"

\

• FOR 9NGLE NON
REPETITIVE fU SE

j

-+-

leM_¥_';ld~D

I"-....~i)

['.. ...... ..::::'("D
['..

0.5

8

""'i---..

,<4S",,"-'I

6

,

I"-....

I"-....

/'1)

f-

\
,

-

6 B

o

10

379

r-..:~i- ~
~- f -

I

\\

2

f-

-

-++50

c-- -

i'..
100

150

Tease (OC)

DC current gain

Thermal transient response

G 4014

F
125°C

25°C

~-

--

I\.

--

~

10
I

--

VCE =4V
-

I
10-1

IC

G 4015

VCEls,t
} hFF8
IV}

G 4016

,

IV}

1.5

l-

125°C25°C,
-30°C"

I

,I
0.5

IC= 18A

I\.2
3

o

I A}

Collector-emitter saturation voltage

Collector-emitter saturation voltage
VCElsat}

10

o
ISlA}

380

'17

Base-emitter saturation voltage

Saturated switching characteristics

G 4011

G 4018

1//
III

VBE(sat )
(V)

8

hFE 8

6

VCE 1SOV
TC

III
1111
rl

1.5
~

-~

't--151

25·C

r- t--j..~

.....,

1

~

_ 10

...-

~

8

I--

0.5

~

I--I--I--I---

125·C

6

-

25·C

V

,

~

~ ~n

2

10

V

"- o.!J

~
10

IC (A)

Saturated switching characteristics

Transition frequency

G 4019

'tE ~150V

1==
I---

TC ~129'C

I---

hFE-8
( ~s)

Is

r--.

-

G 4011

fT
(MHz)

........

I"-

20

2

..........

i'e
~--

6

,t:::::-

...... V

""- r\ .

V

V

I---

Ion

If

Ic (A)

10

--~

VCE~15V

f:10MHz

2

,
8

10

IC (A)

6

10-1

381

e

6

8

IC (A)

j

Collector-base capacitance

Clamped reverse bias safe
operating area

G-4020

G 4021

c

CCBO

(A )

(pF)

'"

2

t--

10

2

10

6

"'I'-.

2

8

8

,

--

6

,

2

-

1
8
6

SEE TEST CIRCUIT OF FIG. 1

,~

2
2

10

i
,

6 8

L.

10

6 8

I

10-1

I
I

,

10 2

6 8

4

10

Fig. 1 - Oamped Esibtest circuit

4

6 8

10' VCE (clamp) (V)

Fig. 2 - Switching times test circuit
(resistive load)

SOV

500 )JH

TEST CONDITIONS:
VCC =150'1

TEST CONDITIONS:
7V;o l-vsB

6 il

I .. 2V

RC

Ic/IB=6

=

VCC -VCE(sat)
IC

I NPUT PULSE

Pul.., width =10,us
tr rtf:S 50ns
duty cycle =1'/.

tp =adjusted for
nominal Ie
RSB'" I n

382

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 11 N is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEX
VCEO
V EBO
Ic
ICM

IB
Ptot
Tstg
Tj

Collector-base voltage (I E= 0)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (tp= 10 ms)
Base current
Total power dissipation at T case::; 25D C
Storage temperature
J unction temperature

:
4

220
220
160
7
20
25
5
150
-65 to 200
200

V
V
V
V
A
A
A

W
DC
DC

INTERNAL SCHEMATIC DIAGR:

MECHANICAL DATA

Dimensions in mm

383

5/80

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1.17 °C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (I B= 0)

V CE= 130V

1.5

rnA

IcEX

Collector cutoff
current

V cr 220V
VBr-1.5V
V CE=220V
V Br-1.5V
T case= 125°C

1.5
6

rnA
rnA

lEBO

Emitter cutoff
current (Ic= 0)

V Es=5V

1

rnA

V CEO (SUS)* Collector-emitter
sustaining voltage

I C =200mA
L= 25 mH

160

V

V EBO

IE =50mA

7

V

Emitter-base
voltage
(I c=O)

V CE (sat) * Collector-emitter
saturation voltage

Ic =8A
Ic =15A

IB =0.8A
IB = 1.88A

0.3
0.6

0.6
1.5

V
V

V BE(sat) *

Base-emitter
saturation voltage

Ic =15A

IB =1.88A

1.4

1.8

V

hFE*

DC current gain

Ic =8A
Ic =15A

Vcr2V
Vcr4V

20
10

Islb

Second breakdown
collector current

V cE=30V
Vcr 140V

t= 1s
t= 1 s

5
0.15

fT

Transition frequency

V CE= 15V
f = 10MHz

Ic =1A

8

384

60

-

A
A
MHz

ELECTRICAL CHARACTERISTICS (continued)
Parameter

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Min. Typ. Max.

Test conditions

Ie = 15A
Vec=30V

Fall time
(fig. 2)
Clamped Eslb
Collector current
(fig. 1)

* Pulsed: pulse duration =

0.4 1.5

!lS

0.75 1.5

!lS

0.14 0.5

!lS

181 = 1.88A

Ie =15A 181 =-1 82=1.88A
Vee=30V

15

V Clamto 160V
L= 5 O!lH

300 !lS, duty cycle

s

Safe operating areas

Unit

A

2%

Derating curves
G 3665
G-4070

i

I

Ie
(A )

~_L

i

I III

10

-

i'.. i\.

~

I "

10/JS
100/Js

,

L

lOms

["'I: ~

\

ttl--

\
0.5

\

I

!

I

_lms

De OPERATION ~

111111
FOR SINGLE NON
REPETITIVE PULSE

:

I

PULSED OPERATlON*

Ie MAX PULSED
ICMAX CONT.

I

\

"'''-'%(/A1,

, l" ~'rco
,

"""i--.. +Ti~
'I-..J
I

" o(\'-5h

I. ,

f+50

385

1'-..

t-

--+-+-+ l!+t+~b'V (~Fp.,.
r---

10

I

ft-

I I •

I i " '}-....

,

I

-t

I

~ T

N~)'~o-r--

,

- c-I-- - t-ft~
100

Thermal transient response

DC current gain
G 4041

1"10

f - - I - 125' C~
f - - I - 2S'C
f--30'C

f---

~

'l rl

i=

VCE =4V

10

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 4050

VCE(sat )

G 4051

veE (sat )
(V) f - - .

(v)

1.5
r--

hFE=B

12S'C 2S'C -

f - - -30'C

ts=

1\'\
.'\

_\

\

I

'\

I

T7.

= OA

1 A

r-..

0,5

I
JI

lOA
SA

'Il

K
o

o
le(A)

10

386

Base-emitter saturation voltage

Saturated switching characteristics
G 40.1,5

G 4044

(I)

VBE(sal )
(v)

II--

VCC=JOV

(1'5)

I

hFE =10

hFE =10
TC = 25·C

1.5

I

U

/

-----

0.5

~

./

-

~ r-

'----- I-- -30·C
'--~

I--

~

I-- 125·C

-

-t--

25·C

/'

o

10-1
1

10

Saturated switching characteristics

./

-

-

ton
If _ _ _

Ie (A)

10

Transition frequency

G 4046

G 40.1,7

fT

VCC =30V
hFE =10
TC =125·C

............

.........

r---

II--

(MHz)

I-I--

.............

i.o'

20

'"

....... r'
~

~

I\.

Ion

f--

..,.,

.... ~

10

VeE =15V
1:10 MHz

i-""""If

I

I
I
I

o
10

lC (A).

6

10. 1

387

,

6

,

Ie

(A)

Collector base capacitance

Clamped reverse bias
safe operating areas

G 4046

G 4052

C

CC80

A)

( pF)

.......

I

,

15

0

~ ,......
10'

--

r-- t-1

t---

~-

see circuits of
of fig_ 1

0- '

10
10

10

10'

Fig. 1 - Clamped ES/b test circuit

'"

10' VCE(clamp) (V)

Fig. 2 - Switching times test circuit
(Resistive load)

SOV

TEST CONDITIONS:
TEST CONDITIONS:

VCC = 30V

7V,,"!-V B B!;o.2V

R

Ic/le =B
tP

=adju~ted
nomma!

_ VCC -VCE(sat)

C-

IC

RC

I NPUT PULSE
pul ... width =10,us

for

Ie

trdf~

SOns
duty cycle =1-'.

RBB' 1 n

S - 3692

388

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 12 is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEX
V CEO

VEBO
Ic
ICM

IB

Ptot
Tstg
Tj

Collector-base voltage (I E= 0)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T caseS25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

300
300
250

V
V
V

7

V

20
A
25
A
4
A
150
W
-65 to 200°C
200
°C

DlAGR:~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case

389

5/80

THERMAL DATA
~h j-case

max

Thermal resistance junction-case

1.17

°C/W

ELECTRI CAL CHARACTERISTICS (T case =25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

I CEO

Collector cutoff
current (I s=O)

V CE=200V

1.5

rnA

I cEX

Collector cutoff
current

V cE =300V
V sr -1.5V
Tcase=125°C
V sE=-1.5V
V CE=300V

1.5

rnA

6

rnA

1

rnA

IESO

Emitter cutoff
current (I C= 0)

V Es=5V

VCEO (sus) "'Collector-emitter
sustaining voltage

Ic =200mA

250

V

V ESO

IE =50mA

7

V

Emitter-base
voltage
(lc=O)

VCE(sat) '" Collector-em itter
saturation voltage

Ic =5A
Ic =10A

Is =0.5A
Is =1.25A

0.22 1
0.5 1.5

V
V

V SE(sat) '" Base-emitter
saturation voltage

Ic =10A

Is =1.25A

1.231.5

V

DC current gain

Ic =5A
Ic =10A

V CE=4V
V CE=4V

20
10

IsAo

Second breakdown
collector current

V cE =30V
V CE=140V

t =1s
t =1s

5
0.15

fT

Transition frequency

Ic =1A
f =10MHz

V CE=15V

8

h FE

...

390

60

-

A
A

MHz

ELECTR I CAL CHARACTER I STICS (continued)
Test conditions

Parameter

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Ic =10A
V cc=150V

I

Bl

Min. Typ. Max.

Unit

0.28

1

!is

1.45

2

!is

0.23 0.5

!is

=1.25A

I Bl =1.25A
Ic =10A
I B2 =-1.25A V cc=150V

Fall time
(fig. 2)
Clamped Esib
Collector current
(fig. 1)

10

V c,am8=250V
L =5 O!iH

• Pulsed: pulse duration =300 !is, duty cycle

A

:s 2%

Safe operating areas

Derating curves

-

G 3665

G 4022

IC

I

'IC MAxPIJLSED

(A)

j !

PULSE OPERATION

101'
IC MAX CONT
B

s

" " rN.L

m~O)JS

I

\

~

,
,

B

4
2

.
,

2

, ,

10

2

, ,

r-

.

"

10'

,

0.5

......

"

4

,

-+

B

250 VCE (V)

50

391

i

i

.

i-t

I
!

I

I
•

~{)+,

I

-

I

I

I

....... 0"'0;;
" ' " Ii~

,

.

,

I

~

----;-~

,

r-t
I

:

""-..i. ~/rco

!

.

I .

i

"}...."~6(j,
i

-

Ii

,•

10-'

I

i
I

~-

!

FOR SINGLE NON
REPETITIVE PULSE

10"

i

i

I
i
""'I:N

Oms

DC OPERATION

I

•

:

.......

~;:t- ~

CO-r--

:r-t I-r~f~~
100

150

Tease (etC)

Thermal transient response

DC current gain
G 4014

~

125'C
25'S-30'C

"

10

'tE=4V

I
10-1

Collector-emitter saturation voltage

10

Collector-emitter saturation voltage
G 4016

G 4015

5

VCE(sat
) hFF=8
(V)

VeE(saI )
(V)

1.5

h

125'C2S'C __
-30'C,-f'

rJ

0.5

Ie= 18A

1,\ 2

.,.

1\1\
3

o

IC (A)

o
Ie(A)

10

392

Saturated switching characteristics

Base-emitter saturation voltage
G 4017

8

--

'--

~

-

_ 30

25"<:

125·C

Te • 25"C

t s-

"

r--

I

r---

r- ......

"-

8

~

...-

hFE-B
'tE _15OV

6

I
I
III
//1
r/

1.5

0.5

G 4018

I II
IJI

VBE(sat)
(V)

6

,
~
1

h

/'

ton

........... ,!t

.... 1-"

o
10

10

Ie (A)

Saturated switching characteristics

Transition frequency

-

G-4019

-

Is

1

--

hFC 8
'tE .ISOV
Te .125'e

(MHz)

~

~

~

...... r-.,

....

20

'"

8
6

, ::::::::-

G 40'1

IT

~

Ion

.......

L

"\

'" "

10

~

VCE .15V

i,...-

f =IOMHz

If
1

o

10- 1
8

10

6

10-1

393

8

6

8

IC (A)

Collector-base capacitance

Oamped reverse bias
safe operating areas

6-4020

G 4023

Ie
(A)

eeBO

,

(pF)

2

10

'"

2

I'
10
8

~"""

2
8

6

,

-

6

,

2

8~ SEE TEST CIRCUIT OF FIG. I
6

,

2
2

10

,

1

,

6 8

10

, 6'

Vea (V)

Fig. 1 - Clamped EsA:> test circuit

TEST CONDITIONS;
VCC =lS0V

TEST CONDITIONS:

l-vaB

I .. 2V

VCC -VCE(sat)

RC

le/la=S

=

Ie

INPUT PULSE

Pulse width =10!'5
trdf:!, 50ns
duty cycle =1".

,tp ::adju.sted for
nominal

RBB"IQ.

,

?

l.

68

10'VCE(Clamp) (V)

Fig. 2 - Switching times test circuit
(resistive load)

SOV

7V ..

,
10

Ie

'-'

394

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 13 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
V CES
VCER
V CEO
V ESO

Ic
ICM

Is
Ptot
Tst9

Tj

Collector-emitter voltage (VSE = 0)
Collector-emitter voltage (RSE ~ 100n)
Collector-emitter voltage (Is = 0)
Base-emitter voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 10ms)
Base current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

400
390
325
7
15
20
3
150
-65 to 200
200

v
V
V
V

A
A
A
W
°C
°C

DIAGR~~:

MECHANICAL DATA

Dimensions in mm

395

5/80

THERMAL DATA
Rth j-ease

ELECTRICAL CHARACTERISTICS (Tease

Collector cutoff
current (VSE = 0)

VCE = 400V
VCE = 400V

"

ICED

Collector cutoff
current (Is = 0)

VCE = 260V

IESO

Emitter cutoff
current (Ic = 0)

V ES = 7V

°C/W

1.17

= 25°C unless otherwise specified)

Test conditions

Parameter
ICES

max

Thermal resistance junction-case

Min. Typ. Max. Unit

Tease = 125°C

1.5
6

mA
mA

1.5

mA

1

mA

325

V

VCEO {sustColiector-emitter
sustaining voltage
(Is = 0)

Ic = 100mA

VCE (sat) * Collector-emitter
saturation voltage

Ic = 4A
Ic = SA

Is = O.SA
Is = 1.6A

O.S
1.5

V
V

VSE (sat) * Base-emitter
saturation voltage

Ic = SA

Is = 1.6A

1.5

V

hFE *

DC current gain

Ic = 4A
Ic = SA

VCE = 4V
VCE = 4V

15
S

60

-

h

Transition
frequency

Ic = 1A
= 10MHz

VCE = 15V

S

ton

TU([J;.on time

Ic = SA
Vcc = 150V

IS1 = 1.6A

ts

Storage time

tf

Fall time

Ic = SA
IS1 = -ls2 = 1.6A
Vcc = 150V

MHz

f

* Pulsed: pulse duration = 300JLs, duty cycle ~2%.

396

1.2

JLs

2.5

JLS

1

JLs

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 14 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications

ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO

VEBO
Ic
ICM

IB
Ptot
T519
Tj

Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 1000)
Collector-emitter voltage (IB = 0)
Base-emitter voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 10ms)
Base current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature

,
4

450
440
400
7
10
15

2
150
-65 to 200
200

v
V
V
V
A
A
A
W
°C
°C

INTERNAL SCHEMATIC DIAGR:

E

MECHANICAL DATA

Dimensions in mm

Collector CQllri8Cted to. caSe

397

5/80

THERMAL DATA
Rth j-ease

ELECTRICAL CHARACTERISTICS (Tease

=

Collector cutoff
current (VSE = 0)

VCE
VCE

= 450V
= 450V

ICEO

Collector cutoff
current (Is = 0)

VCE

= 320V

IESO

Emitter cutoff
current (lc = 0)

YES

1.17

°C/W

25°C unless otherwise specified)

Min. Typ. Max. Unit

Test conditions

Parameter
ICES

max

Thermal resistance junction-case

Tease

=

125°C

1.5
6

mA
mA

1.5

mA

1

mA

.I

= 7V

VCEO (sus)*Collector-emitter
sustaining voltage
(Is = 0)

Ic

= 100mA

VCE (sat) * Collector-em itter
saturation voltage

Ic
Ic

= 3A
= 6A

Is
Is

= 0.6A
= 1.2A

0.6
1.5

V
V

VSE (sat) * Base-emitter
saturation voltage

Ic

= 6A

Is

= 1.2A

1.5

V

hFE *

Ic
Ic

= 3A
= 6A

VCE
VCE

= 4V
= 4V

8

= 1A
= 10MHz

VCE

= 15V

8

DC current gain

400

fr

Transition
frequency

Ic
f

ton

Turn-on time

Ic = 6A
Vcc = 150V

lSI

ts

Storage time

= -ls2 = 1.2A

tf

Fall time

lSI
Ic = 6A
Vcc = 150V

* Pulsed: pulse duration = 300(..ts. duty cycle
398

= 1.2A

~2%.

15

V

60

-

MHz
1.4

(..ts

3

(..tS

1.2

(..ts

MULTI EPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 20 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEX
VCEO
V EBO

Ic
ICM

IB
Ptot
Tstg
Tj

Collector-base voltage (I E = 0)
Collector-emitter voltage. (VBE = -1.5 V)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case s25 °C
Storage temperature
Junction temperature

160
V
160
V
125
V
7
V
50
A
60
A
10
A
350
W
-65 to 200°C
200
ac

:
4

INTERNAL SCHEMATIC DIAGRA

Dimensions in mm

MECHANICAL DATA

9

399

11.7

5/80

THERMAL DATA

F\h j-case

Thermal resistance junction-case

max

0.5

°C/W

ELECTRICAL CHARACTERISTICS(T case=25OCunless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

ICEO

Collector cutoff
current (I B=O)

V CE=100V

3

mA

I cEX

Collector cutoff
current

V CE=1S0V
V Br-1.5V
T case=125°C
V CE=1S0V
V Br-1.5V

3

mA

12

mA

1

mA

Emitter cutoff
cu rrent (I C= 0)

lEBO

V EB=5V

VCEO (sus) ·Collector..;emitter
sustaining voltage

Ic =200mA

125

V

V EBO

Emitter-base
voltage
(lc=O)

'E =50mA

7

V

Collector-emitter
saturation voltage

Ic =25A
'c =50A

IB =2.5A
IB =5A

0.3 O.S
0.55 1.2

V
V

Base-emitter
saturation voltage

Ic =50A

I B =5A

1.35

V

DC current gain

Ic =25A
Ic =50A

V cE=2V
V cE=4V

20
10

t = 1s
t =1s

1.5
17.5

VCE(sat)

•

VBE(Sat)

•

hFE

•

'sib

Second breakdown
collector current

V CE=40V
V CE=20V

fT

Transition frequency

I C =2A
V CE=15V
f =10MHz

400

8

2

SO

-

A
A
MHz

ELECTRICAL CHARACTERISTICS(continued)
Parameter

Test conditions

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Ic =SOA
Vcc=60V

161

Ic =SOA
I B2 =-SA

Fall time
(fig. 2)
Clamped EsA>
Collector current
(fig. 1)

Min. Typ. Max.

Unit

0.4 1.S

IlS

0.8S 1.2

IlS

=SA

161 =SA
V cc=60V

0.1

0.3

IlS

SO

V clam8=12SV
L =S OIlH

A

... Pulsed: pulse duration =300 IlS. duty cycle -::; 2%

Safe operating areas

Derating curves
G 3665

G 4194

6

Ie MAX

4 ICMAX CONT

10

,,"

, 'I

2

10 ~s
'100 ~s
Ims
10ms

'\.

II

II !IIII

~

\

,
~

~-

2
~~--~

,

68

2

10

,

,

68

2

,

68

I

I
I

rr
so

102 125

401

I

I

,

I

,

---

-+~---L fI

l'..~ri'o
.......

~- ' "

i

I
I

.[t~f--~

i'...

--l-c-~

l
T"-, 0,

- - TC .2S'C

t--

r-

I

\

25'C

0 r--..
r......

YI

Tease ::::125°C

A

'l

-....

"-

0.5

. . . r--

'on

.... ""

"I

'f

o
10

10

Saturated switching characteristics

Transition frequency

-

,

G 4161

G 4208

fT

(1'5)

hFE .8

VCC dOOV
TC ·12S'C

.......

I"'....

".........

r-..

(MHz )

~

20

.....

"-

L
VCE = 15V

10

.....

...

-

'=10MHz

'on

r/

'f

10

o

IC (A)

•

16'

409

8

•

8

Ie (A)

Collector-base capacitance

Qamped reverse bias
safe operating are'as

-

G 10162

CCBO
(pF)

Ie

8

(A)

6

I

,

G 4063

,

30

T

1

10

2

8
6

,

31--.

10

8

2

,

,

""-

8

I'

,

I-..

2

,' I - - SEE
1

10

10 -1

2

,

6 8

,

10

,

68

1

6 8

TEST CIRCUIT OFF[G.I

IIIIIIII

II

11111111

II
, '8

,

68

2

10

VcFf.V)

10'

Fig.1 - Clamped Es/b test circuit

9

TE ST CONDITIONS:

f.'H

VCC

TEST CONOITIONS

7

V'" I-VBB I >

2v

R

=IOOV

_ VCC -VCE(sat)

C-

[C/[B ~8

Ie

INPUT PULSE
tp =adjusted
nominal

100

, 8

VeE (V)

Fig. 2 - Switching times test circuit
(resistive load)

50V

~.500

,
10'

puI~ width = 5f15
tr Itf ~ SOns
duty cycle =1-'.

for

Ie

RBB~ln

s- F 85

410

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 22 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3
metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCSO

V CEX
V CEO
V ESO

Ic
ICM

Is

Ptot
Tstg
Tj

300
V
300
V
250
V
7
V
A
40
50
A
8
A
350
W
-65 to 200
OC
200°C

Collector-base voltage (I E= 0)
Collector-emitter voltage (V sEF"" 1.5V)
Collector-emitter voltage (I s= 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case ::;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DlAGR:: ~~'

E

MECHANICAL DATA

Dimensions in mm

Coflectp(connected to case

411

5/80

THERMAL DATA
Rth j-case

Thermal resistance junction-case

max

0.5

°C/W

ELECTRICAL CHARACTERISTI CS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

I CEO

Collector cutoff
current (18=0)

V CE=200V

3

mA

I cEx

Collector cutoff
current

V Br-1.5V
V cE=300V
T case=125 °C
V Br-1.5V
V cE=300V

3

mA

12

mA

1

mA

Emitter cutoff
current ( I C= 0)

lEBO

V EB=5V

V CEO (sus) ·Collector-emitter
sustaining voltage

Ic =200mA

250

V

V EBO

IE =50mA

7

V

Emitter-base
voltage
(lc=O)

VCE (sat) • Collector-emitter
saturation voltage

Ic =10A
Ic =20A

IB =1A
IB =2.5A

0.2
1
0.321.5

V
V

Base-emitter
saturation voltage

Ic =20A

IB =2.5A

1.1

V

h FE •

DC current gain

Ic =10A
Ic =20A

V CE=4V
V CE=4V

20
10

Isth

Second breakdown
collector current

V cE=140V
V cE=20V

t = is
t =1s

0.15
17.5

fT

Transition frequency

V CE=15V
Ic =2A
f =10MHz

V BE(sat)

•

412

10

1.5

60

-

A
A
MHz

ELECTR I CAL CHARACTERISTI CS (continued)
Parameter
tOil

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Test conditions
Ic =20A
Vcc=100V

181

Min. Typ. Max.

=2.5A

0.221.3

liS

2

liS

0.17 0.5

liS

1.5
Ic =20A
182 =-2.5A

Fall time
(fig. 2)

=2.5A
V cc=100V
181

o

Clamped Esib
Collector current
(fig. 1)

Unit

25

V clam =250V
L =5 OIiH

A

• Pulsed: pulse duration =300 liS, duty cycle ~2%

Safe operating areas

Derating curves
G 3665

G-4067

I

IC
(A )

10 2
50
'0

10

r-~

I 11111111
PULSE OPERATlON*

11,1
ICMAX PULSED

it ~~I.,)
DC OPERATIO N ( / 1\

1001'S

~:.-

- - ---+---.

i
-~

..

IcMAX CONT.

I

IO,us

I

I ,

~ ~'

I

I

r-....~(~
c-- -r i"::
!

r---.~'~D

f-- ---+--

-FOR !;INGlE NO
1 REPETITIVE PUL E

\

"

!

0.5

-

~-

i I'.

_..

i

-

,

10.1
10

"

I

I
o

413

I

I

j

50

r-....

c--

I

I

'joo....

. . . . (}s"'oq ....... t-....
~-bi;

I
!

....... b".

:'" '10

I

I

I

i
100

"

DC current gain

Thermal transient response

G 4025

,I 11111
Tcase=125°CI

v ...

25 0

ci

-30°C

.....V

I

"'"
.........

,

1\

~~

i
I

I
VCE =4V

I I

10

10

IC

Collector-emitter saturation voltage

Collector-emitter saturation voltage
G-4157

G 4158

VCE(satl

)

(V)

I

~

0.8

1.5

hFE= 8

I

i

0.6
Tcaseo= -30"

_\

25A

I".

0.5

20A

"-/

2 5°C

0.4

/

/'

IC= 30A

-

I"'-

/

125°C

15A

0.2

lOA
5A~

I'I..J

o

o

10-1

414

/
/

V

10

IC (A)

Base-emitter saturation voltage

Saturated switching characteristics
G- 4160

G 4159

(V)

I

llTlT

VBE(sal )
hFE= S ,

(1'5 )

1'I1

I---

I

-30'C
1.S

-,

\
2S'C

hFE=S
Vcc :'OOV

-

TC : 2S·C

I"'-

)I'l~A

Tease =125"C

~ r--..

r-....

Ion

,/

i"l

'-'

I'..

--

o.S

1..1

1"--

I

~

If

o
.0

10

IC(A)

Saturated switching characteristics

Transition frequency

G- , 161

G 4206

I

fT

(ps )

hFE :8

(MHz )

VCC :'OOV
TC: '2S'C

'I-...

1"::

20

~~

J..../

-....

"""

10

f';;

VCE'1SV
f .. 10MHz

Ion

+-

!--

t:::..-

If
1

o
'0

IC (A)

6

•

Ie (A)

415

Collector-base capacitance

Clamped reverse bias safe
operating areas

-

G 4162

10

G-4065

IC

Ccso

(A )

(pF )
4

,

10
8
G

,

3!--

10

8

1

6

"-

4

:F

I'

,

SEE TEST CIRCUIT OF FIG.I

4

r-

1

,
468

4

10

68

4

10'

10-'

68

1

4

, ,

68

10

VcelV)

sov
TEST CONDITIONS:
TEST CONDITIONS:

Yee =IOOY

I-vee I ~ 2V
Re

Ic/le =8

=

Yee -YeE(satl

Ie

INPUT PULSE
t

P = adjusted for
nominal

,

10

Fig. 2 - Switching times test circuit
(resistive load)

Fig. 1 - aamped Estbtest circuit

7v~

6,

puis.. width

Ie

tr,tf~

RB8~llt

= 5J1S

SOns

duty eyel .. =1 ",
!a-36!:.3

416

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 40 is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEX
V CEO
V EBO

Ic
ICM

IB

Ptot
Tstg
Tj

Collector-base voltage (I E= 0)
Collector-emitter voltage (V BE= -1.5V)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p= 10ms)
Base current
Total power dissipation at T case:S:25DC
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

160
160
125
7
20
28
4
120
-65 to 200
200

V
V
V
V
A
A
A
W
DC
DC

DlAGR::_~r

E

MECHANICAL DATA

Dimensions in mm

Collector connected to case
26

rna;<

10.9

TO-3

417

5/80

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1.46 °C/W

ELECTRICAL CHARACTERISTICS (T case= 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

IcEO

Collector. cutoff
current (I s = 0)

V CE=100V

1

mA

IcEX

Collector cutoff
current

V CE=160V
V sr-1.5V
T case= 12~C
V sr-1.5V
V CE=160V

1

mA

5

mA

V Es=5V

1

mA

IESO

Emitter-cutoff
current (I C= 0)

V CEO (sustColiector-emitter
sustaining voltage
V ESO

Emitter-base
voltage
(lc= 0)

Ic =200mA

125

V

IE =50mA

7

V

V CE (sat) * Collector -em itter
saturation voltage

Ic =10A
Ic =15A

Is =1A
Is = 1.88 A

0.6
0.9

1.2
1.6

V
V

V SE (sat) * Base-emitter
saturation voltage

Ic =15A

Is =1.88A

1.7

2

V

hFE*

DC current gain

Ic =10A
Ic =15A

V CE=4V
V CE=4V

15
8

45

-

Isib

Second breakdown
collector current

V CE=30V
V CE=50V

t= 1s
t= 1s

4
1

A
A

fT

Transition frequency

Ic =1A
f=10MHz

V cr15V

8

MHz

* Pulsed: pulse duration =

300 IlS, duty cycle::; 2%.
418

-

ELECTRICAL CHARACTERISTICS(continued)
Parameter

Test conditions

Min. Typ. Max.

ton

Turn-on time
(see fig. 2)

Ic =15A
Vee=30V

ts

Storage time
(see fig. 2)
Fall time
(see fig. 2)

Ie =15A I BI=-I B2 =1.88A.
Vec=30V

Clamped ES/b
Collector current
(see fig. 1)

V eLAMP== 125V
L =500~H

tf

0.35 1.2

I B1 =1.88A

0.85

~s

~s

1

0.140.4

~s

15

A

Derating curves

Safe operating areas

G 3665

G-3981

Ie
(A)

8

8

2B

I,

2

ICMAX CONT
I

~

I

I I II

6
8

====toCOPERATION

I

r-:: ~

i ~i
,

I
2

I

10 _1
2

,

II
8

,

2

10

88

"':V1'

10 2 125

I I

VeE

8

f--. t----

,

++50

(V)

419

>rF

~I'S

I

,

r--.,

"- ......-:;'S~oq...... '-.......l

I
2

_.

"- r-..... '% (/J

,

Ii

i , It!

i

I

0.5

6

,
,

i

I' ...... r--.,''t,O

,

I

~J

i

lms
lOms

I'

FOR SINGLE NON*
REPETITIVE PU LSE

--- -,,-

_lOps
I
100).lS;-:-1

I

'~I
2

"

"'"

i

,

,_~H-

PULSE OPERATION*

, Ie MAX PULSED

10

Unit

~

'{- -

.--

........
100

DC current gain

Thermal transient response
G-393511

G 3982

hFE

NR

BO

~±±ttltllt:10

Zth=NR,Rth

8

ItE =4V

~

60

'\

,

40

\\
~

1¢'25'C
25'C
-30'C
20

Hit

:ti

=lf~_ ~

10-3 L-LLLillllL-'-l...LllillL-Llilllll1----1-Llilll"--LLllllliJ
2

~

6 8

2

'" 6 6

2

10- 3

10- 4

10-5

'" 6 8

2

10

4 6 8

4

10-' ~(se-c)

10- 2

68

I,

10- 1

Collector-emitter saturation voltage

68

4

10

Collector-emitter saturation voltage

G 3963

G 3984

VCE(sat )

)

hFE=B

I

• IC

(V)

68

IC (A)

5A
lOA
15A
20A
25A

II

1.5

v
1--125'C

f - - 25'C

f--

-30"C

"'-

~

~

0.5

1'\

I

"'"-

I

II

I

l

/

V
./

V
o
10

420

Ie

(A)

Base-emitter saturation voltage
G

I

VSE(sat)

Saturated switching characteristics

l;191

G 3986

IT

,

~J

6

IT

,-.

,

'--

7-

'.-

.-

68

i"'--

'I'--

ts

6

..... .

4

'"

2

I

7·

~ I-

4

10-1

--

4

-30·e
25·e
125·e

6 8

--+

./

2

f.---

4

10

.-

ton

l--l--

---t;'

6 8

Ie (A)

10

Saturated switching characteristics

hFE~8

6

Tease =125'C

2

(A)

G

4192

T
('1Hz )

e-e-e--

Vee :.lOV

8

Ie

Transition frequency

G 3987

4

~

e-e--

4

"

_.

1,5

0,5

Vee- 30V
hFE~ 8
Tcase=2SoC

8

1/

(V)

e---

l":

t-.....

J....-

20

1'-

./

............

l'..

i.-"

~
8
6
4

Vee15 V
10

ton . /

f =10MHz

V
~

2

6

2

10

Ie

10-'

(A)

421

•

Ie (A)

Collector-base capacitance

Clamped reverse bias safe
operating areaS
!-t
I-

G 3988

CCBO
(pF)

G 3969

ra::.

8

mHf--=~]'~mHut[++-::=1=-H=

6

q!--l--l-l-.!-J,.-H,-U--l--l-l-W-i-I-I-

r--......

,~-+~++j-l~-+.~~.{~~-

.--

I"-

10

1'.t--.I"-

TI

c

,

Ii

_.--r--

10 '

,

,

III

10

4

10 '

10

VCB

6

8

125

(V)

10

Fig. 1 - Clamped Es/b test circuit

10'

~

~500

CONDITIONS

71';;,I-V 8B I;;,2V

Ic/lB ~S
t P :: adjusted for
nominal 1 C

Ras?>1 n

[~:e

TEST CONDITIONS:

Vee

@TU.T.,

IVBB

s-

,uH

~--I

369:

1
,

I

I
,

= 30V
Vee -veE(sall

Re =
Vcl amp

Ie

INPUT PULSE
pulse width =10,...
t r' tf ~'\50ns

,

i

duty cyh~ =}./.

~i

422

Re

il

VCE(clamp) ( V)

Fig. 2 - Switching times test circuit
(resistive load)

50V

TEST

,I i

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 41 is a silicon multiepitaxial planar N PN transistor in Jedec T0-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEX
V CEO

VEBO
Ic
ICM

IB

Ptot
Tstg
Tj

Collector-base voltage ( I E= 0)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

250
V
250
V
200
V
7
V
15
A
20
A
3
A
120
W
-65 to 200°C
200
OC

DIAGR~~:

MECHANICAL DATA

Dimensions in mm

423

5/80

THERMAL DATA

f\h i-case

max

Thermal resistance junction-case

1.46

°C/W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (I B=O)

V CE=160V

1

mA

IcEX

Collector cutoff
current

V CE=250V
V BF-1.5V
T case=125 °C
V CE=250V
V BF-1.5V

1

mA

5

mA

V EB=5V

1

mA

lEBO

Emitter cutoff
current (I C= 0)

V CEO (sus) *Collector-emitter
sustaining voltage

Ic =200mA

200

V

V EBO

IE =50mA

7

V

Emitter-base
voltage
( Ic=O)

VCE (sat) * Collector-emitter
saturation voltage

Ic =5A
Ic =8A

IB =0.5A
IB =1A

0.38 1.2
0.6 1.6

V
V

V BE(sat) * Base-emitter
saturation voltage

Ic =8A

IB =1A

1.35

V

Ic =5A
Ic =8A

V CE=4V
V CE=4V

15
8

h FE *

DC current gain

ISA:l

Second breakdown
collector current

V CE=30V
V CE=135V

t =1s
t =1s

4
0.15

ft

Transition frequency

Ic =1A
f =10MHz

V CE=15V

8

424

2

45

-

A
A
MHz

ELECTRICAL CHARACTERISTICS(continued)
Parameter

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Min. Typ. Max.

Test conditions

Ic =8A
V cc=150V

I

•
=8A

Oamped Esib
Collector current
(fig. 1)

* Pulsed: pulse duration

0.28

=1A

I B1 =1A
V cc=150V

Ie
I B2 =-1 A

Fall time
(fig. 2)

B1

1

~s

1.2 1.7

~s

0.250.8

~s

8

V clam8=200V

L =5

Unit

A

O~H

=300 ~s, duty cycle ,.:0;2%

Safe operating areas

Derating curves
G 3665

G 3934

IC
(A )

Ie MAX PULSED

I- PULSE OPERATION' _

"

Ie MAX CONT
10 8
6

,
1

I

-tt

I

-,U~S

~

i

I

lOC~s

lms

lOms

,

~ I::-..

DC OPERATIOW

\

,

5

2 .. FCA SI\GLE ~
1 REPETITIVE PULSE

j

~

-

.............

"'- "' <:l'W"lj

D .......

0.5

\..:

-

f'. ...... ~rOD

I-- --I--

,

--

1': t--... 'st, (,

8

.............

~{)~
~
~h-

I

8
5

,

°D_ -

"'i..

_.. - -

Z

.......

-2
,

6 8

,

10

5

,

8

10 2

6 8

o

VCE (V)

425

50

100

150

Tease ('e)

DC current gain

Thermal transient response

G 3936
8

- - I---

6

Zth=NR·R th

10 B

I-.

I.

t--.

1

IIi

8

2

ii

125'e
25'e

10

II
b -0.5

10- '

,
8

6 =0.3
6 =0.2
E =0.1

• =0.05
5 =0

i

s~
-

H-,

,

,

, ,,

68

, II,

- --

VeE

2

I-

---

'i

~4V

I

I: 1111111

._-- -

, ,,
'" 10-' " (s~c)

- - f-

If

10

,

I

6

8

6

8

I

\E(sat I

veE(""t )

I

I
/

-j·lt
---'-Ie
2A
-,4A
6A
8A
lOA
12A
/'4A

.-r-

,\:,

(VI

hFE =8

I
-

1.5

-

--;

---

-

-

I
_'25'e

-----1 25'e
-30'e

-r

/
~.

Ie (A)

G- 393 ,

G 3937

L

10'

Collector-emitter saturation voltage

Collector-emitter saturation voltage

(VI

-

I!

i

;:::
10- 5

---

t::c---

1----

~.

~

/

30'e~ -1-l-

8

I

I.

i:

I

+-

I

I

""-.

.,...,

0,5
~

~
,

18 (A)

10- '

426

:

68

1

10

Ie (A)

Base-emitter saturation voltage
VBE(sat)
(V)

hFe B

--+ -H

'_+\

I

II

G-3940

t
(1'5 ) 1---

~J

f

-II-I

1.5

Saturated switching characteristics

G-3939

I

--

, '-------

.......

-

I

--

2

------ 1---

/'

0.5

---1-----

~;.125°C

i

I'

1

i

~

:11
4

68

10

I

I

I-r--

e----

- - ~t::

I

=t=-+ I~;;--

-,
10

I

6 ,

~-::

--

5 __

25"e

I

Tease_25°C

8-

V

j..-

-

c-::---""hFE ~8

1

i--"A

-30"e

-......r-- ~~-Y1

Is

-

/.

1

-

1---- f-t----

!

b:::;::::

If

Ie (A)

I

I

ie(A)

Saturated switching characteristics

Transition frequency

G 3941

G 39"5

t
(I's )r-

Vee

0:

--I--

150 V

hFE ~ 8

-ts

-

i""

-

?

~

veE ~ 15V
-

h10MHz

- - I - - - -t---

r-- .........

-

I

20
I

I-r--

Tease= 125°C

",... ........

'\

./
I

~
t

10

i.--"
/ . -....... ~

"-.ton

"",6:::::===

1\

:;:::::'-f-""

i

I

f

1

!

:I

1
5

'0 --

427

6

Ie (A)

Qamped reverse bias
safe operating area

Collector-base capacitance

-

(A)t

(pF )
t.

,

G-3943

Ic~~~"~~~~~~~~~~~11

G 3942

Ccoo

~

..............

10

.........

,
t,

r--

2
S£I'£I'

10"
10
b

:1

10.'

circuit

L:::0~f..:f~ig!:...~I_llU_-L-L.LLill1L-::---'---L..LI..ll.UI
10

Vcs(V)

Fig. 1 - Qamped EsA> test circuit

Fig. 2 - Switching times test circuit
(resistive load)

TEST CONDITIONS:

Vee =150'/

TEST CONDITIONS:

Ic/lS

7 v;.

I-vss I ~

Vee -VeE(sat)

2V

Re =

=8

Ie

INPUT PULSE

Pulse width =10 iJS
t"tl ~ 50ns

tp =adjusted 10r
nominal

J()'VCE (clamp) (V)

Ie

duty cycle =1·/.

Rss"n

428

MUlTIEPITAXIAl PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 41 N is a silicon multiepitaxial planar N PN transistor in Jedec TO-3 metal case intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEX
VCEO
VEBO
Ic
ICM

IB
P tot
Tst9

Tj

Collector-base voltage (I E=O)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T cases25°C
Storage temperature
Junction temperature

220
V
220
V
160
V
7
V
18
A
A
25
3.6
A
120
W
-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

Dimensions in mm

Collector connected to case

429

5/80

THERMAL DATA
~h j-case

Thermal resistance junction-case

max

1.46

°C /W

ELECTRICAL CHARACTERISTICS(T case=25°Cunless otherwise specified)
Parameter
ICED

Collector cutoff
current (I s=O)

I CEX

Collector cutoff
current

Emitter cutoff
current (I C=0)

IESO

Min. Typ. Max.

Unit

V CE=130V

1

mA

V sr-1.5V
V CE=220V
T1Oase=125OC
V CE=220V
V sr-1.5V

1

mA

5

mA

V Es=5V

1

mA

Test conditions

~

V CEO (sus) "'Collector-emitter
sustaining voltage

Ic =200mA

160

V

VESO

Emitter-base
voltage (I c= 0)

IE =50mA

7

V

Collector-emitter
saturation voltage

Ic =8A
Ic =12A

Is =0.8A
Is =1.5A

0.5 1.2
0.751.6

V
V

V SE(sat) '" Base-emitter
saturation voltage

Ic =12A

Is =1.5A

1.5

V

h FE '"

DCcurrent gain

Ic =8A
Ic =12A

V CE=4V
V CE=4V

Isth

Second breakdown
collector current

V cE =30V
V CE=100V

t =1s
t = 1s

4
0.27

fT

Transition
frequency

Ic =1A
f =10MHz

V CE=15V

8

VCE (sat)

'"

15
8

2

45

-

-

-

430

A
A
MHz

ELECTRICAL CHARACTERISTICS(continued)
Parameter

Test conditions

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

I c =12A
Vcc=30V

Unit

0.35

1.3

I1S

0.85

1.5

I1S

0.14

0.8

I1S

181 =1.5A

I C =12A
181=-1 BF1.5A
V cc=30V

Fall time
(fig. 2)

tl

Min. Typ. Max.

Oamped EsA>
Collector current
(fig. 1)

12

V CLAMp==160V

A

L = 50011 H

... Pulsed: pulse duration =300 I1S, duty cycle ~2%

Derating curves

Safe operating areas

,

Ie
(A)

6

,
Ie MAX PU.SED
25
,

PULSE

,

:,

RAT ION"

.".

1B/' ICMAXC~T.

10

G 3665

G 3990

10".
100"•
1m.
10m.

-

.~

DC OPERATION

~

.......-: .......

.........

I II III

.

FOR SINGlE NON
REPETITIVE PULSE

~{

~lfo
............

"- .......4s~...... ............

0.5

6

4

10-'

,

4

6

, ,

•

10

6 ,

2

10' 160

~~

...... ......

150

Tease ('C)

~%
I"{- -

\"

,

4

.......

6 ,

o

'icE (V)

431

50

100

DC current gain

Thermal transient response

G 3991

G 393511

,0

Zth,NR·R th

8

12S'C
2S'C
-30'C

60

40

"-

~\

~

10-1

8

~ S, 'l:

6,0.S
;; ,0.3

6

-if

5,0.1

• =O.oS

h=O

468

2

10~4

468

2

10- 3

20

:
§'

I [Ilfnll

III
2

10- 5

rr=

-

;; _0.2

468

2

10- 2

.I,

'tE :J.V

68

2

10

468

10-' ~ (."C)

,

6 8

68

10- '

,

10

(Al

Collector-emitter saturation voltage

Collector-emitter saturation voltage
G-, 39!J.2

G-3993

VCE(sat

VCE(sat )

68

IC

) hFE =8

(V)

(V)

IC

1.S

I---- SA
f-

lOA
ISA
lOA

f---- I-

12S'C
2S'C

I- -30'C

---

=:--"

"-

"'"

I

'I

'Y
1/

0.5

/
/
",-

o
4

Ie (Al

,

10- 1

432

68

.....
,

68

4

10

IC

6 8

(A)

Saturated switching characteristics

Base-emitter saturation voltage
G 42) 9

Go 3986

11/
11/

VBE(sal)
(V)

I
(I's)

11/

6

r---

Tcase=25~C

,

fII

"

1,5

Vec= 30V
hFE'= 8

~

2

~A

0,5

--

, 6,

, 6'

Is

,
-30'C
25 ·C
125 ·C

I-o

..... 1---

~

7
'-

r-..... r-....

10"

....-

-

./
ton

--t;'"

, 6'
10

IC (A)

10

Saturated switching characteristics

==
-

~E=B

Tease =125-C

(A)

G· 41'92

'IT

-

Vec =lOV

(I's)

IC

Transition frequency

G-3987

,

I
I

(MHz )
(V)

'-....

........

20

........

.....

,

...........

"-

~
VCE=15 V

10

Ion . /

I =10MHz

/'

~
..
10

o

1

It

(A)

433

.-

..

,

.

•IC(A)
•

Collector-base capacitance

Clamped reverse bias safe
operating areas

G 3968

eceo •

Ie

(pF) ,

(A)

I""'--..

~
10'

G-399S

1211l1li__
,

10

,f--

t--.""

Ii
SEE TEST eIReu~!,OF. FIG.l

Ii
10

4

,

•

4

4

,.

Vee

10'

10

4

,

,

4

10

(V)

Rg. 1 - Clamped Esib test circuit

III

i

10- '

,.

"8

2

~

500 )JH

TEST CONDITIONS:

TEST CONOITIONS:

7V ..

I-vaa I ;. 2V

IC / I

a

tP

Vee
R

nominal

= JOV

_ Vee -VCE(ut)

e-

=8

=adjusted

15

B

Rg. 2 - Switching times test circuit
(resistive load)

50V

tpJl

4

10' 160 "cE(c1amp) (V )

Ie

Re

INPUT PULSE

for

pul"" width =10 I'"
tr.tf ~ 50ns

Ie

RaB'ln

duty cycle =1·'.
!t-319Z

434

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX 42 is a silicon multiepitaxial planar N PN transistor in Jedec T0-3 metal case, intended for use in switching and linear applications in military and in9ustrial equipment.

ABSOLUTE MAXIMUM RATINGS
Collector-base voltage ( I E= 0)
Collector-emitter voltage (V BE=-1.5V)
Collector-emitter voltage (I B=O)
Emitter-base voltage (I c= 0)
Collector current
Collector peak current (t p=1 0 ms)
Base current
Total power dissipation at T case:525°C
Storage temperature
Junction temperature

300
V
300
V
250
V
7
V
12
A
15
A
2.4
A
120
W
-65 to 200
OC
200°C

INTERNAL SCHEMATIC DIAGR~4

Dimensions in mm

MECHANICAL DATA

435

5/80

THERMAL DATA

F\h j-case

max

Thermal resistance junction-case

1.46

°C /W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

I CEO

Collector cutoff
current (I B=O)

V cE =200V

1

mA

I cEX

Collector cutoff
current

V cE=300V
V Br-1.5V
T case=125°C
V Br-1.5V
V cE=300V

1

mA

5

mA

V EB=5V

1

mA

Emitter cutoff
current (I C= 0)

lEBO

V CEO (sus) ·Collector-emitter
sustaining voltage

Ic =200mA

250

V

V EBO

Emitter-base
voltage
(I C= 0)

'E =50mA

7

V

Collector-emitter
saturation voltage

Ic =4A
'c =6A

'B =0.4A
'B =0.75A

0.331.2
0.451.6

V
V

Base-emitter
saturation voltage

Ic =6A

'B =0.75A

1.23

2

V

DC current gain

Ic =4A
Ic =6A

V CE=4V
V CE=4V

8

-

t =1s
t =1s

0.15
4

A
A

VCE(sat)

•

VBE(Sat)

•

h FE

•

'sA>

Second breakdown
collector current

V CE=135V
V CE=30V

fT

Transition frequency

V CE=15V
Ic =1A
f
=10MHz

436

15

8

45

-

MHz

ELECTRICAL CHARACTERISTICS(continued)
Parameter

Test conditions

ton

Turn-on time
(fig. 2)

ts

Storage time
(fig. 2)

tf

Ic =6A
V cc=150V

I

B1

Min. Typ. Max.

Unit

0.23

1

IlS

1.5

2

IlS

0.2 1.2

Il s

=0.75A

I B1 =0.75A
Ic =6A
I B2 =-0.75A V cc=150V

Fall time
(fig. 2)
Clamped Esib
Collector current
(fig. 1)

A

6

V clam8=250V
L =5 OIlH

'" Pulsed: pulse duration =300 IlS, duty cycle =2%

Safe operating areas

Derating curves
G 3665

G-3944

1-- - -

"

'I>,

PI

InN

IOOs

10,

OI'S

,
6

·1

1""11::: ~

,

\

8

r-..: 1'-.. I% <""'/1f:
........

6

r-....

0

...... 1'-..
*~~~.~INGLE

,,\
N

~

,N...

r-....

0.5

r-....

........ 4-Sojioq ...... 1'-..

~{)1'
~;;:- ~

{- r-

6

6

68

10

6

,

6

10'

r-...

68

o

VeE (V)

437

50

100

Thermal transient response

DC current gain
G 3935/1

hFE

:

1

_.

10. 8
6

2

125~C

1/ /
30'C
10 ~~~§!2i5'aC~~~~il~tf--~

6

2

lO-1

,•

6 =0..5

6

& =0..3

" -0.2

1

• =0..1

i

10-2

•

I

.s =0.05
6=0.

6

+

'e=2
2

~

6!1

1

4

I;

8

2

4 6 8

10- 3

10--'<

Fe

8
6

.=

M

j-i-

III

3
10- 5

-G--3r9'361

2~-+-+~~~-~//-+~~~--+-4

I

•
,

~~~~~~li~~~i;~!IIl~_
jo...

Zth=NR·R th

,

II I1lill 1

2

10- 2

4 68

2

4 6 8

6

6

8

10-1 "t (Se-C)

Collector-emitter saturation voltage

8

10

Collector-emitter saturation voltage

-

G 3938

VCEI,.t)
IV) 1HI+II-t1t--+-+-t-+

t)

y--t-t-+-t-t---t--t--t---H

hFE =8

Ll

_~_'
II-+ft--IIf-I.lll-+--,---+-r---HH' IC

V,

t-

2A
4A
6A

5

t-

8A
/

- 10.A
12A
V 14A

125'CC
25'
-30'C

7

I--f-

I-0,

5

I

'/

~~

~
,

6 8

,

1

438

68

10

Ie (A)

Base-emitter saturation voltage

Saturated switching characteristics

-

G-39J9

VBE(sat )
(V)

G 3940

t

hFE=8

(flS)
-

fJ

---

- 1.-r--

1.5

'tC =150 V

-

-

r- .....

hFE =8

,......-......

Tcase=25°C

-30·C

........
0.5

r--r-.

-

./

2S"C
-=-j:.12S·C

........
~

o

,

6 8

,

10

I

-::::: ~

~

....

tt'

1

6 8

~ F-

ton

IC (A)

Saturated switching characteristics

Transition frequency

G 3941

t

G 3945

(flS )

---

Vee =150 v

hFE =8
Tcase=12S'C

Is

IT
veE =ISV

(MHz)

f=10MHz

t-- r-

r- ..... r-.

20

./

......

./

......

~

.... b::==

"

10

.......- -.... ......

~on

'\.
\

:;:::::..-

f

6

Xl

439

6
-1

8

6

8

Ie (A)

Collector-base capacitance

Clamped reverse bias
safe operating areas

G-l942

Ccso
(pF )

G 3946

IC
(A )

I

4

...........

I

10

2

........

I

8
5

,

-

f--

SEE TEST CIRCUIT OF FIG. 1

2

II11111I

111I1

1111111

Jill

1

I

10

10
Vcs(V)

Fig. 2 -Switching times test circuit
(resistive load)

Fig. 1 - Clamped Esib test circuit

tpn

50V

500 }JH

TEST CONDITIONS:

TEST CONDITIONS:

I-vss I",
Ic/ l s=8

7V"

Vee =150V

2V

Vee -VeE(sat)

Re
Vctamp

tp=adjusted for
nominal 1C

=

Ie

INPUT PULSE

Pulse width =10 j..s
t r' tf":S 50ns
duty cycle

=,-,.

RSS'IIl.

440

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 43 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
V CES
VCER
VCEO
VEBO
Ic
ICM
IB
Ptot
Tstg
Tj

Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 1000)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 10ms)
Base current
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

400
360
325
7
10
12
2
120
-65 to 200
200

V
V
V
V

A
A
A
W

°C
°C

DIAGR:~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-3

441

5/80

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (Tease

Collector cutoff
current (VSE = 0)

VCE
VCE

= 400V
= 400V

ICEO

Collector cutoff
current (Is = 0)

VCE

IESO

Emitter cutoff
current (Ic = 0)

V ES

ICES

---

Min. Typ. Max. Unit
1
5

mA
mA

= 260V

1

mA

= 7V

1

mA

Tease

= 125°C

V CEO (sus) *Collector-emitter
sustaining voltage
(Is = 0)

Ic

= 100mA

VCE (sat) * Collector-emitter
saturation voltage

Ic
Ic

= 3A
= 5A

Is
·I s

VSE (sat) * Base-emitter
saturation voltage

Ic

= 5A

Is

hFE *

Ic
Ic

= 3A
= 5A

VCE
VCE

= 4V
= 4V

8

= 1A
= 10MHz

VCE

= 15V

8

DC current gain

325

= 0_375A
= 1A
= 1A

fT

Transition
frequency

Ic
f

ton

Turn-on time

Ic = 5A
Vcc = 150V

IS1

ts

Storage time

= -ls2 = 1A

tf

Fall time

Ic = 5A
IS1
Vcc = 150V

* Pulsed: pulse duration

=

°C/W

= 25°C unless otherwise specified)

Test conditions

Parameter

1.46

= 1A

300/Ls, duty cycle :;;;2%.
442

15

V

1
1.6

V
V

2

V

60

MHz

1

/LS

2.2

/LS

1.2

/Ls

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The BUX 44 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO

V E60
Ic
ICM

16

Ptot
Tstg
Tj

Collector-emitter voltage (V6E = 0)
Collector-emitter voltage (R 6E :::; 1000)
Collector-emitter voltage (16 = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (tp :::; 10ms)
Base current
Total power dissipation at Tease :::;25°C
Storage temperature
Junction temperature

450
440
400
7

8
10
1.6
120
-65 to 200
200

v
V
V
V
A
A
A
W
°C
°C

INTERNAL SCHEMATIC DIAGRA:~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case

443

5/80

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1.46

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

1
5

mA
mA

VCE = 320V

1

mA

V EB = 7V

1

mA

Collector cutoff
current (VBE = 0)

VCE = 450V
VCE = 450V

IcEO

Collector cutoff
current (IB = 0)

lEBO

Emitter cutoff
current (Ic = 0)

ICES

VCEO (sus) 'Collector-emitter
sustaining voltage
(IB= 0)

.
.

Min. Typ. Max. Unit

Tease = 125°C

400

Ic = 100mA

V

Collector-emitter
saturation voltage

Ic = 2A
Ic = 4A

IB = 0.25A
IB = 0.8A

1
2

V
V

Base-emitter
saturation voltage

Ic = 4A

IB = 0.8A

2

V

DC current gain

Ic = 2A
Ic = 4A

VCE = 4V
VCE = 4V

15
8

fT

Transition
frequency

Ic = 1A
f = 10MHz

VCE = 15V

8

ton

Turn-on time

Ic = 4A
Vcc = 150V

18 = 0.8A

ts

Storage time

tl

Fall time

Ic= 4A IB1 = -182 = 0.8A
Vcc = 150V

VCE (sat)
VBE (sat)
hFE

.

• Pulsed: pulse duration = 300p.s, duty cycle :::::2%.
444

45

MHz

1

p.s

2.5

p.s

1.2

p.s

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The BUX 46 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
VCES
VCER
VCEO

V EBO
Ic
IB

Ptot
T stg
Tj

Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 100)
collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Base cu rrent
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature

v

850
850

V
V
V
A
A
W
°C
°C

400

7
5
3
85
-65 to 175
175

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

Dimensions in mm

Collector connected to case

iO-3

445

5/80

THERMAL DATA
Rthj-eaSe

max

Thermal resistance junction-case

1.75

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES
ICER
lEBO

Test conditions

Min. Typ. Max. Unit

VCE
VCE

= 850V
= 850V

Tease

= 125°C

100
1

mA

Collector cutoff
VCE
current (RBE :::::;100) VCE

= 850V
= 850V

Tease = 125°C

300
2

mA

Emitter cutoff
current (Ic = 0)

= 7V

1

mA

Collector cutoff
current (VBE = 0)

V EB

f,LA
f,LA

V CEO (sustColiector-emitter
sustaining voltage
(IB = 0)

Ic

= 100mA

VCE (sat) * Collector-em itter
saturation voltage

Ic
Ic

= 2.5A
= 3.5A

IB = 0.5A
IB = 0.7A

1.5
5

V
V

VBE (sat) * Base-emitter
saturation voltage

Ic

= 2.5A

IB

= 0.5A

1.3

V

1

f,Ls

3

f,Ls

0.8

f,Ls

ton

400

Turn-on time

ts

Storage time

tf

Fall time

* Pulsed: pulse duration =

Ic = 2.5A
IB1 = -IB2

Vcc

= 0.5A

= 150V

300f,Ls, duty cycle :::::;2%.
446

V

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The BUX 47 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal
case, intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
V CES
VCER
V CEO

V EBO
Ic
ICM

IB
IBM

Ptot
Tstg
Tj

Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (RBE ~ 1all)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 1Oms)
Base current
Base peak cu rrent (tp ~ 10 ms )
Total power dissipation at Tease ~25°C
Storage temperature
Junction temperature

850
850
400
7
8.5.
12
3
6
107
-65 to 175
175

v
V
V
V
A
A
A
A
W

°C
°C

INTERNAL SCHEMATIC DIAGR~~:

MECHANICAL DATA

Dimensions in mm

Collect()r. connected to!)_

l

!

I~

1

447

5/80

i1

11

THERMAL DATA
Rth j-ease

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICES
ICER
lEBO

max

Thermal resistance junction-case

Collector cutoff
current (VBE = 0)

1.4

°C/W

= 25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

VCE = 850V
VCE = 850V

Tease = 125°C

150
1.5

JLA
rnA

Collector cutoff
VCE = 850V
current (RBE ':::;100) VCE = 850V

Tease = 125°C

400
3

JLA
rnA

1

rnA

Emitter cutoff
current (Ic = 0)

V EB = 7V

VCEO (sustColiector-emitter
sustaining voltage
(IB = 0)

Ic = 100mA

VCE (sat) * Collector-em itter
saturation voltage

Ic = 6A
Ic = 9A

IB = 1.2A
IB = 3A

1.5
3

V
V

VBE (sat) * Base.-emitter
saturation voltage

Ic = 6A

IB = 1.2A

1.6

V

1

JLS

3

JLS

0.8

JLs

ton

Turn-on time

ts

Storage time

tf

Fall time

400

Ic= 6A
Vcc = 150V
IB1 = -IB2 = 1.2A

* Pulsed: pulse duration = 300JLs. duty cycle .:::;2%.

448

V

MULTIEPITAXIAL MESA NPN
VERY HIGH VOLTAGE POWER SWITCH
The BUX48 series are multiepitaxial mesa NPN transistors in a Jedec TO-3 metal case,
particularly intended for switching and industrial applications from single and three-phase
mai ns operation.

ABSOLUTE MAXIMUM RATINGS
V CES
VCER
VCEO
V EBO

Ic
ICM

Icp

BUX48

Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (R BE = 10n)
Collector-emitter voltage (I B = 0)
Emitter--base voltage (lc = 0)
Collector current
Collector peak current (tp ~ 5ms)
Collector peak current non repetitive
(t p ~ 20 ps)
Base current
Base peak current (t p ~ 5ms)
Total power dissipatIOn at Tcase ~ 25°C
Storage temperature
Junction temperature

850V
850V
400V

BUX48A BUX48B BUX48C
1000V
1000V
450V

1000V
1000V
600V

1000V
1000V
700V

7V
15A
30A
55A
4A
20A
175W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM

,~'
E

MECHANICAL DATA

Dimensions in mm

Collector connecteoto case

449

10/82

THERMAL DATA
Rth

j-ease

max.

Thermal resistance junction-case

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Test conditions

Parameter
ICEs

ICER

I cEo

lEBO

Collector cutoff
current (V BE = 0)

Collector cutoff
current (R BE = 1On.)

Collector cutoff
current (I B == 0)

Emitter cutoff
current (I C = 0)

Min. Typ. Max. Unit

for BUX48 and BUX48A
VCE = V CES
Tease = 125°C
VCE=VCES
for BUX48B and BUX48C
VCE=VCES
Tease = 125°C
VCE = V CES
VCE=VCES
Tease = 125°C
VCE = V CES
for BUX48B
VCE = V CEO
for BUX48C
VCE = V CEO
V EB = 5V
BUX48
Ic = 200mA
BUX48A Ic = 200mA
BUX48B Ic = 100mA
BUX48C Ic = 100mA

200

p.A

2

mA

500

p.A

3

mA

500

p.A

4

mA

1

mA

1

mA

1

mA

V CEo(susi Collector-emitter
sustaining voltage

for
for
for
for

400
450
600
700

V
V
V
V

V CER (susi Collector-emitter
sustaining voltage
(R BE = 1On. )

for BUX48B and BUX48C
L=2mH
VClamp = 1000V
Ic = 0.5A
1000

V

450

ELECTRICAL CHARACTERISTICS (continued)
Parameter
VeE(Sat) * Collector-emitter
saturation voltage

V BE(sat) * Base-emitter
saturation voltage

ton

ts

tf

Turn-on time
(resistive load)

Storage ti me
(resistive load)

Fall time
(resistive load)

Test conditions

Min. Typ. Max. Unit

for BUX48
Ie = lOA
IB = 2A
Ie = 15A
IB = 3A
for BUX48A
Ie = SA
IB = 1.6A
Ie = 12A
IB=2.4A
for BUX48B and BUX48C
IB = 1.5A
Ie =6A
IB = 2.5A
Ie = SA
Ie = lOA
IB =4A
for BUX48
Ie = lOA
IB =2A
for BUX48A
le=SA
I B =1.6A
for BUX48B and BUX48C
IB = 1.5A
Ie = 6A
Ie = lOA
IB =4A
for BUX48
Vee = 150V Ie = lOA
IBI = -IB2 = 2A
for BUX48A
Vee = 150V Ie =SA
IBI = -IB2 = 1.6A
for BUX48B and BUX48C
Vee = 250V Ie =6A
IBI = -IB2 = 1.5A
for BUX48
Vee = 150V Ie = lOA
IBI = -IB2 = 2A
for BUX48A
Vee = 150V Ie = SA
IBI = -IB2 = 1.6A
for BUX48B and BUX48C
Vee = 250V Ie =6A
IBI = -IB2 = 1.5A
for BUX48
Vee = 150V Ie = lOA
IBI = -IB2 = 2A
for BUX48A
Vee = 150V Ie = SA
IBI = -IB2 = 1.6A
for BUX48B and BUX48C
Vee = 250V Ie =6A
IBI = -IB2 = 1.5A

* Pulsed: pulse duration = 300 /ls, duty cyle -1.5%.
451

1.5
5

V
V

1.5
5

V
V

1.5
2
3

V
V
V

1.6

V

1.6

V

1.6
2

V
V

1

/ls

1

0.500

1

/lS
/ls

3

/lS

3

/ls

3

/ls

O.S

/ls

O.S

/ls

0.200 O.S

/lS

1.5

G-4797/1

Safe operating areas

'c

(A)
4

*PULSE DURATION

'C~ PULS.

~

'CMAX CONT.
8

5

--+--+- I-H-

4~-

!"I

~

:

10

"'

I

;

~.

4---

--+

J-

DC OPERATION
2

-.l

'l1W
; !, !I::

c------j---++

6t==+-:-::-t:-~:
2

-1

10

f----

I

I

! :1

i.

-1\

.

t-+~

I I

(I

I

,
BF~-:-=t
4

10}Js
100 }Js
lms
10ms

~

~!"TI
FOR STNGLE NON-)f
REPSTITIVE PULSE

\
I

:f---- -+-

i'lri~i\.

i: )11

!

4

I - Area of permissible ope·
ration during turn·-on provided RSE < 100n and
tp < 0.25 tls
Safe operati ng areas

10

2

BUX48- +BUX48A +-

II

!I

2

I;i !I

I
4

'C

4

6 8

'C ~_~ PULS. -

.I
6
4

r=--+-~

,

4

r--

10

1
B
5

<

..0-

II

\

~

I

'---roif- SCNtLE

I REPETITIVE

2

\

N0f".!~

K'i\.

PULSE

.1·,

, i II Ii
4

6 B

10

452

11

I

I

BUX48B
BUX48C
1111111
4

6 B

10

2

I

!'r

"

I

I-- --2f---

10

e

,_-+-__
c-+

4

I - Area of permissible operation during turn-on pro·
vided RSE < 100n and
tp
0,25 tls

6

,

, i! I

L

1

4

I

B

6t----

I
2

10}Js
100,..,s
lms
10ms

'""

\

tmr

,

6 8

VCE (V)

~

DC OPERATION
2

4

",,-L

"

8

2

*PULSE DURATION

'CMAX CONT.
10

2

10

r----j-

,

Ii i

I II :111

6 8

10

(A)

I

RS
2

6 8

VCE (V)

Clamped reverse bias safe operating
areas
IC ~::-:f-_
(A):-::::jC

..- 00-- --

2

G

"819

VCE(sat )

__ j

, 11

Collector-emitter saturation voltage

G- 4199

(V)

~ +DR---+-+++++t11
>--_-+---+++-Hi '-+ ;' _ . .. ---+
, ,
'1: 1~li_~!1 ~I
e-4.-

Tcase -12S'C _____

-;~: g-----

- --i--o

J-,

t--

hFE- S

J
II

o.S

)

1/ j
-,

, ,i

10

10

.

!

10

./~

BUX4S'::'"
BUX46Afr
BUX46B
BUX48C
2

, ,

2

.

i

:

!

o

-,

2

10'

10

VcE(cIamp)M

Collector-emitter saturation voltage

IC (Al

Base-emitter saturation voltage
G

G 4820

I I
I I

VCE(sat )
(V)

1\

V

IC :lA
2A- t -

V

I..t v
I\,- J V v V
\V V V
:;...-

V
1.---1/

l\~v ~ V

'"vA,...- :,.-'"

V1

\

1\
\I\. "-

1\

l\ V vV

,....

l\.

f-----

~!- l -

l'o.

12S·C

,\
\\

I\:v

\ \ I---':

1--I--

I\,

!'-.

Tcase=-~~:~

SA- l 6A
7A- I6A

V' j.-'

I\,

I
I

VBE(sat )

o_S t-'

"-

.....

-\,..V

l.- IhFE=5

I' t-...
I't--- .....

o
o

-,

10

453

1.1
V
~

~S21

DC current gain

Saturated switching characteristics
G I, 823

G 4622

.....

r--

IS

~

r" ~~

f-- r10

-,
,=

10

·Ct--'./'
-30·C

=
==
-

VCE =5V

.

16'

10

Teale

iTI

II. ,

-,

10

Saturated switching characteristics

"'"

r--

VCE =2 OV
hFE= 4
V6E 011=-5 V

'1

,

Ic (A)

G

~

--

-

Ion

TCa$e= 1~~·C

I

'--

••
IC (A)

Saturated switching characteristics
G

4824

4825

(ns)

(ns)

t.

- -,
I

-~

~
I?~

VCE=250V ,
hFE= 4
162 =-161 (CONT. LINE)
162 =-2161(DI5CONT. LINE)

-

t"s ......

r--- 162
t'Fp4
= -1
3

10

f------ Tcase=2SDC

Hi'

-

.,

If

I-

61 (CONT. LINE)
162 =-2161 (DI5CONT.llNE)
Tcase =l2S-C

-- '-

Ion

1--

C:--

1i7

I

10

••
IC (A)

454

1

,....
......

IVCE =250V

1:7'

I-

- .- 'I

Ion

Maximum base current I so to drive
the discrete Darlington in saturated
limit conditions
G ""

Derating curves
Go 3821

7

leo
(A)

f- f- -

..

- I - f- -

7

Ic:30A
VCE(sa!) .2.5V

17

J

7

1/
J
V

I

" '"I" '/""6
"-

"

0.5

'to.:. (/~
"K~/'~o
,q.Ss.i N

I""~J;-<:lt,. '!....

_l-- V

'"

("", 1

f7

"'X"/'~ f- f-f~.

~

1

12

16

20

24

28

o

32

Thermal transient response

50

100

150

Tca..!'C)

DC current gain (only for BUX48/A)
G 3822

cas e. 125'C

t.,......-

25'C

V- i--"
10

V-

-3O'C

l---i--

~'

1\

VCE. 5V

:, II

10-< LJ--l..I.illl1L-.Ll..l.WUIL-LLlllJ!lL-..l....l...I.WJiL.LLlliIllJ

10 5

10 42

68

10 3

1(i

1012?;(~}J~)

4

,

•

1

455

•10

I
4

,

•

IC (A)

Collector-emitter saturation voltage
(only for BUX48/A)
G 3823

Collector-emitter saturation voltage
(only for BUX48/A)

-

G 3824

VCE(sat)

VCE(sat)

(V)

(V)

hFE =5

\

1\

Tcas"e =12S-C

25"C\
-30"C

15A

0.5

I'.

12A

'/

OA

II

~

SA

1\1
o

4Al\.

~

,...
4

••

'I.
4

1

4

••

10

••

o

IC(A)

IS(A)

Extreme characteristics Ic vs. V BE
at VCE constant (only for BUX48/A)

Base-emitter saturation voltage (only
for BUX48/A)

-

Gw 3825

II
II
II

VSE(sat )
(V)

G 3826

IC

III
I

(A)

III
rt

Tease =-30

15

I
VCE ='.5V
Tcase=2SoC

90.,.Confidence

I'

,., I'~

f- ~5·
0.5

II-

10

MIN

J

""'25"C

hFE =5

o

4

4

••

1

••

4

10

••

o

Ic (A)

456

0.5

AX

Saturated switching
(only for BUX4S/A)

.-----

I

I I
I I

()JS) 2

10

characteristics

Saturated switching
(only for BUX48/A)

G 3821

II

2-1

Vee =250V
hFE= 5
182 =-181

--

10
8

8

Is
,

2

8

1

Vee = 250V
hFE = 5
182 =-1 81

~-

--+

--+-

"I

Is

1--

j)

I'...
8

,

2

4

~
•

/

......

I

8

4

6

8

frequency

,

2

10

(only

.........

2r--

!i

10-1

Transition
BUX4S/A)

I,

./

on

~
F=

Tease =125"(:

r-

......
'"

1"'0;

G 38Z8

I IIII

!

f-- 4

characteristics

Ion

6 8

4

le(A)

10-1

for

Clamped ESJb test circuit

6

8

2

10

le(A)

G 3829

'T
40V

(MHz )

,

11

10

I

1/

tp

5V ..

J

I-vee I .. 2V

Ie/I e =5

I

2I e1 >\-l e2 1 >le1
tp =adjusted for
nominal Ie
ReB = adjusted for
le2

, =IMHz
VeE =10V

I
I

9

.Jl.

TEST CONDITIONS:

I

1
8
•

8

8 8
Ie (A)

457

Vclamp

Discrete Darlington configuration
using BUX48 series devices

Switching times test circuit inductive
load

c
40V

~-~-~~

BUX48

lB

I B1
-VB

--o"......r-I-.r
---0

5-3652

Switchable power at 30A: 18KVA

458

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The BUX 80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case,
parficularly intended for converters, inv'erters, switching regulators and motor control
systems applications.

ABSOLUTE MAXIMUM RATINGS
800
V
500
V
400
V
10
V
10
A
15
A
5
A
100
W
-65to 150°C
150
°C

Collector-emitter voltage (V BE= 0)
Collector-emitter voltage (R BE= SOn)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
'Collector peak current
Base current
Total power dissipation at T case ~40°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

DIAGR:~:

MECHANICAL DATA

Dimensions in mm

Collector connected ,to case

.""
TO--3

459

5/80

THERMAL DATA
Rth j-case

Thermal resistance junction-case

max

1.1

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

ICES

IESO

Test conditions

Collector cutoff
current (VSE=O)

V CE=800V
V cE=800V

Emitter cutoff
current (I C= 0)

V Es=10V

V CEO (sus) ·Collector-emitter
sustaining voltage
(I s=O)
V CER(sus) * Collector-emitter
sustaining voltage
(RSE=50Q)
VCE (sat)

•

VSE(sat)

... Base-emitter

Collector-emitter
saturation voltage

Unit

1
3

mA
mA

10

mA

T case= 125°C

Ic =100mA

Ic

Min. Typ. Max.

=100mA

400

V

500

V

Ic =5A
Ic =8A

Is =1A
Is =2.5A

1.5
3

V
V

saturation voltage

Ic =5A
Ic =8A

Is =1A
Is =2.5A

1.4
1.8

V
V

DC current gain

Ic =1.2A

V CE=5V

ton

Turn-on time

Ic =5A
V cc=250V

ts

Storage time

tf

Fall time

hFE

...

30

-

IS1 =1A

0.5

~s

Ic =5A
I S2 =-2A

I S1 =1A
V cc=250V

3.5

~s

Ic =5A
I S2 =-2A

I S1 =1A
V cc=-250V

0.5

~s

• Pulsed: pu!se duration ~ 300 ilS, duty cycls

460

=

1.570

Safe operating areas

Derating curves
G

G 3800

3845

,

IC

8

(A)

,

; IC MAX PULS.
10

III

PULSE OPERATION

"l

10 "s
100,us

~

'IIr MAX CON.

6

,
~\,

DC OPERATION

;

\

ill
8

-

6

,

;

'\
~,

*FOR SII\GLENON
REPETITIVE PULSE

,

10-1

1

r

I

6

~ HTcase :::40°C I

,

;

,

10-2

1111

:1

10

I-

I

" ,

,

,

68

10'

10'

68

100

50

VCE (V )

Area of permissible operation during Turn-on provided R
t p s:: 0,61ls

Transient thermal response

BE

s:: 100n and

DC current gain
G J668

G 3693

NR

"FE

8
6

b-05
0,03

" 0:

c;;.

1cr1b - O.'

;

i

b-Q~5

t---l
6_,))1

:---

10

6_ 2

T

8

10 2

JLJl

~'-Io-

---

--

Tease = 125°C

I-

25·C-

r-....:: t\.

~~

-30·C

r--..

VCE =5V

11111111

1\Y"
10- 4

10

J\

T

10 3

10- 5

..........

,

,I

10-2

i

I
"t'(sec)

6

8

IC (A)

461

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 369 1

VCE(sat)

G JB 18

VCE(sat )

(V)

(V)

hFE" S

Tease

=- 30 e }I-

O.S

G

2S'C F

12S'C

IC

'rl

6A

')

6

SA

~

..... r:.r::::::;::;:;: p
o

8A

4A

"JA\I

lI.

2A
lA

B

6
B
lC (A)

I"

0.5

Base-emitter saturation voltage

19 (A)

1.5

Saturated switching characteristics
(;,3846

G 3689

t

V9E(sat )
(V)

case=..,.30°C

~

'"
171/

~

I..... r;..

1

~ .....-

j;;O

"250V
hF.E" 5
192 "- 21 91

6

,

--

t'-

f'...

2S'y

fO.S

Vce

( }JS)

hFE"S

~ !'.....

12S'C

L--- I--

1/
If
2

o

f-+f-tf-t-

6

B

6

B

Ic(A)

462

I--

-

~V

~

Saturated switching characteristics

Saturated switching characteristics
-36 2

-3847

I

--

(I's)

•
---

Vee = 250V
hFE ' 5
IS2 =-2I S1
Teas£>= 125°C

Is

.......

i'-....

.......

./

-'

~

--

-

If

Ion

Vce

8

./

......

~

-

r:::==

10

=250V
hFE =5
IS2 =-2I S1
Tcase=-30°C

~

r--..~

If
ton

- ....
~

Ie (A)

Clamped reverse bias
safe operating areas

Clamped ES/b test circuit
G- )848

Ie
(A)

40V

TEST CONDITIONS:

5V ..

I-vss I .. 2V

te/Is =5
2I s1 >1-l s2 1>ISI
tp =adju~tl!'d
nommal
ReB

=adjuste-d
IS2

o

200

400

600

VCE(clamp)(V)

463

for

Ie

for

~

ff-

~
~

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE SWITCH
The BUX84, is a multiepitaxial mesa NPN transistor, intended for use in converters inverters,
switching regulators, motor control systems and switching applications.
It is mounted in Jedec TO·-220 plastic package.

ABSOLUTE MAXIMUM RATINGS
VCES
V CEO

Ic
ICM
IB
IBM

Ptot
T stg
Tj

Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (I B = 0)'
Collector current
Collector peak current
Base current
Base peak current
Total power dissip
Storage temp
Junction

INTERNAL

Ie

3
0.75
1
40
-65 to 150
150

V
V

A
A
A
A
W
°C
°C

DIAGR~~:

MECHANICAL DATA

10/82

800
400
2

Dimensions in mm

464

THERMAL DATA
Rth j-case

max.

Thermal resistance junction--case

2.5

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless ohterwise specified)
Parameter
ICES

lEBO

Test conditions

Collector cutoff
current (V BE = 0)

VCE = VCES
VCE = VCES Tj = 125°C

Emitter cutoff
current (Ic = 0)

V EB = 5V

Min. Typ. Max. Unit
200
1.5

mA

1

mA

J.1A

V CEO (susi Collector-emitter
sustaining voltage

Ic = 100mA
L = 25mH

IB = 0

V CE(sat) * Collector-emitter
saturation voltage

Ic = 0.3A
Ic = 1A

IB = 30m A
IB = 0.2A

1.5
3

V
V

VBE(sat) * Base-em itter
saturation voltage

Ic = 1A

IB = 0.2A

1.1

V

hFE *

DC current gain

VCE = 5V

Ic=0.1A

ton

Turn-on time

ts

Storage time

tf

Fall time

400

V

_.

50
300 500

Ic = 1A
IB = 0.2A

Vcc = 250V
-I B = Oo4A

* Pulsed. pulse duration = 300 /J.S, duty cycle = 1%.

465

ns

1

3.5

J1S

0.1

104

/J.S

EPITAXIAL PLANAR NPN
FAST SWITCHING HIGH VOLTAGE POWER
The BUY 18S is a silicon planar epitaxial NPN transistor in Jedec TO-3 metal case. It is
intended for high-voltage switching power applications.

ABSOLUTE MAXIMUM RATINGS
Vcso
VCEO

V ESO

Ic
ICM
ICM

Is

Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (repetitive)
Collector peak current (t .;;; 10 ms)
Base current
Total power dissipation at Tease';;; 75°C
Storage temperature
Junction temperature

400
200
6

V

7

A

V

V

10
A
15
A
4
A
50
W
-65 to 175°C
175
°C

INTERNAL SCHEMATIC DIAGRAM~LVr

60-,

E

MECHANICAL DATA

6/77

Dimensions in mm

466

THERMAL DATA
Rlh j-ease

2

max

Thermal resistance junction-case

·C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 ·C unless otherwise specified)
Parameter
leBo

Collector cutoff
current (IE = 0)

V(BR) eBO * Collector~base
breakdown voltage
(IE = 0)

Test conditions
VeB = 200V
VeB = 200V

Min. Typ. Max. Unit
10
2

Tease = 100·C

IJ-A
rnA

Ie

= 5mA

400

V

IE

= 1 rnA

6

V

VCEO (SUS) *Collector-emitter
sustaining voltage
(lB = 0)

Ie

= 20 rnA

200

V

Collector-emitter
saturation voltage

Ie
Ie

= 5A
= 7A

IB
IB

= 0.5A
= 0.7A

VBE (S':I)*

Base-emitter
saturation voltage

Ie
Ie

= 5A
= 7A

IB
IB

= 0.5A
= 0.7A

hFE *

DC current gain

Ie

= 1A

VeE = 5V

fr

Transition frequency

Ie

= 0.5A

VeE = 10V

CeBo

Collector-base
capacitance

IE
f

= 0
= 1 MHz

VeB = 50V

ton

Turn-on time

Ie

= 5A

IBI = 0.5A

tall

Turn-off time

Ie = 5A
IBI = -IB2 = 0.5A

ISlb **

Second breakdown
collector current

V EBO ...

VeE (sal) *

Emitter-base
voltage
(Ie =0)

VeE = 40V

* Pulsed: pulse duration = 300 IJ-s, duty cycle = 1.5 %
** Pulsed: 1s, non repetitive pulse
467

1

V
V

1.4
1.6

V
V

1

20

30

MHz

55

pF

0.3
1

-

35

1

IJ-s

1

IJ-s
A

Safe operating areas

DC current gain
G-1492

G

2653

•

IC
(A)

6

·PULSE
OPERATION

IC MAX
(PULSED)

VCE -5V

II111

10
IC MAX
(CONT I NUOUS)

,

Ims

--........

;:::;;--

'"~

..... 1--,

10

VCEO MAX = 200V

10-2

Ii

46'

10

10'

68

I,

10'

68

6

VCE (v)

10- 1

Base-emitter saturation voltage

Collector-emitter saturation voltage

G 2652

G 2651

VBE(sat )

VCE(sat)
(V) 6

(V )

hFE=10
10

•

IC(A)

hFE =10

1.5

8

--

Tcase =125'C/

--

1---

Tease;;: 25°C

25'C

k-'

10-1

•
6

i

10- 2
6

10-'

8

6

I

.......-t-

0.5

llO-~

2

8

,

6

2

~~

,

6

.

IC (A)

IC (A)

468

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, HIGH CURRENT SWITCH
The BUY 47 and BUY 48 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal
case. They are used in high-voltage, high-current switching applications up to 7 A.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEO
V EBO

Ic
ICM

Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current (repetitive)
Total power dissipation at Tamb ,.;; 25·C
Tease ,.;;50·C
Storage temperature
Junction temperature

BUY 47

BUY 48

150V
120V

200V
170V

6V
7A
10A
1W
10W
-65 to 200·C
200 ·C

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

Dimensions in mm

469

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

15
175

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
Collector cutoff
current (IE = 0)

Icso

Test conditions
for BUY 47
Vcs= 80 V
Vcs= 80 V
for BUY 48
Vcs= 100 V
Vcs= 100 V

V(SR) cso * Collector-base
breakdown voltage
(IE = 0)

Ic

VCEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic

V ESO

•

Min. Typ. Max. Unit

Tease = 125°C

10
1

fLA
mA

Tease = 125°C

10
1

fLA
mA

= 1 mA
for BUY 47
for BUY 48

150
200

V
V

for BUY 47
for BUY 48

120
170

V
V

.6

V

= 20mA

Em Itter -base
voltage
(lc=O)

IE

= 1 mA

VCE(satt

Collector-emitter
saturation voltage

Ic
Ic
Ic

= 0.5 A
=2A
= 5A

Is = 50 mA
Is = 0.2 A
Is = 0.5 A

0.05

VSE(sat)*

Base-emitter
saturation voltage

Ic
Ic
Ic

= 0.5 A
= 2A
=5A

Is = 50 mA
Is = 0.2 A
·I s = 0.5 A

0.8

470

0.45
1

V
V
V

1.1
1.5

V
V
V

ELECTRICAL CHARACTERISTICS (continued)
Parameter
hFE*

Test conditions

DC 'current gain

Ic
Ic
Ic
Ic

= 50 mA
= 0.5 A
= 2A
=5A

V CE =
V CE =
V CE =
V CE =

Min. Typ. Max. Unit
5
5
5
5

V
V
V
V

40
40
15

-

130
150
130
45

fT

Transition frequency

Ic

= 100mA V CE = 10 V

90

C eso

Collector-base
capacitance

IE
f

= 0
Ves= 50 V
= 1 MHz

45

ton

Turn-on time

toft

Turn-off time

Ie =5A
Vee= 40 V
IS1 = -ls2 = 0.5 A

-

MHz
80

pF

1

fLs

2

fLs

* Pulsed: pulse duration = 300 fLs, duty cycle = 15%

G-2667

Safe operating areas
I"'
roo.

DC OPERATION

I"

1\

\
10-1

1\

8

1\

-~ r--

10-2
4

6

•

8

10

471

BUV48
BUV47
6 8

VCE (V)

DC current gain

Collector-emitter saturation voltage
G-2666

G-2664

VCE(sat)
(v)

VCE =5V

0.6
200

,/
100

V

-

hFE=10
0.4

r-...

\
\

D.2

'"

o

o

10.2

IC(A)

Collector-base capacitance

Base-emitter saturation voltage
G-2665

G-2668

IC

Ceeo

(A)

(pF)

75

f=IMH

50

r-...
25

o

o

1.5 VBE(sat) (V)

472

50

100

150

Vee(V)

Power rating chart

Saturated switching characteristics
G 2670

G-266

Ptot
(W)

-

-r-.

j-.!!. r-..

hFE-1O
VCC=40V
lp=10ps

12
10

I"

.......
Ion
If

l-

"

,

""= 1'1--

l"I"

"50

100

Switching time test circuit

-11.6V

+40V
VCC

2011

+37V---rI
OV.J

L

~10~sl-­

INPUT PULSE

tr,tf~10ns

-3.3V

DUTY CYCLE= 1%

5-2270

473

150

I"-

Tcase("C)

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, MEDIUM CURRENT SWITCH
The BUY49P is a silicon epitaxial planar NPN transistor in Jedec TO-126 plastic package. It
is used in high-current switching applications up to 3A.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
V EBO
Ic
ICM
Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C = 0)
Collector current
Collector peak current
Total power dissipation at
Storage temperature
Junction temperat

250
200
6
3
5
15
-65 to 150
150

V
V
V

A
A
W
°C
°C

IAGRAM

'4:
MECHANICAL DATA

,

'

, ' .

Dimensions in mm

,',

"

'w. ~,!}tmJ· ~~'~,·.~5h& ~#~,ohhe 1~'~$ :~..~ntr~·i~·

10/82

474

THERMAL DATA
Rth j-case

max.

Thermal resistance junction-case

8.33

°C/W

ELECTRICAL CHARACTERISTICS (T case = 2SOC unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

Icso

Collector cutoff
current (I E = 0)

Vca = 200V

Vcs~

Collector-base
breakdown voltage
(IE = 0)

Ic = 100p.A

2S0

V

V CEo(susi Collector-emitter
sustaining voltage
(Is = 0)

Ic = 20mA

200

V

VESO *

IE = 1mA

6

V

Emitter-base
voltage (lc = 0)

0.1

p.A

VCE(sat) * Collector-emitter
saturation voltage

Ic = O.SA

Is = SOmA

0.2

V

VSE(sat) * Base-emitter
saturation voltage

Ic = O.SA

Is = SOmA

1.1

V

hFE *

Ic = 20mA
Ic =20mA
Ic = O.SA
Ic =20mA
T case = -SsoC

VCE
VCE
VCE
VCE

DC current gain

=
=
=
=

2V
SV
SV
2V

fT

Transition frequency

Ic = 100mA VCE = 10V

Ccao

Collector-base
capacitance

IE =0
f = 1MHz

Vcs = 10V

ton

Turn-on time

Ic = O.SA

Vcc = 20V

toff

Turn-off time

IS1 = -ls2 = SOmA

* Pulsed: pulse duration = 300 p.s, duty cycle = 1.S%.

47S

30
40
40

120

-

-

16

-

30

MHz
SO

pF

0.8

p.s

2.S

p.s

EPITAXIAL PLANAR NPN
HIGH VOLTAGE, MEDIUM CURRENT SWITCH
The BUY 49S is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
used in high-voltage, high-current switching applications up to 3A.

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO

VEBO
Ic
ICM

Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Total power dissipation at Tamb .;;; 25°C
Tease .;;;50°C
Storage temperature
Junction temperature

:
4

V
V

250
200
6
3
5
1

V
A
A
W

10

W

-65 to 200°C
200
°C

INTERNAL SCHEMATIC DIAGR:

MECHANICAL DATA

6177

Dimensions in mm

476

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

Collector cutoff
current (IE = 0)

leso

V(SR) eso * Collector-base
breakdown voltage
(IE = 0)

max

'C/W
'C/W

25'C unless otherwise specified)

Test conditions

Ves= 200 V
Ve8= 200 V

15
175

m~x

Min. Typ. Max. Unit

0.1
50

Tease = 150 'C

fLA
fLA

Ie

= 100 fLA

250

V

(sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ie

= 20 mA

200

V

VESO*

Emitter-base
voltage
(Ie =0)

IE

= 1 mA

6

V

VCE (sat) *

Collector-emitter
saturation voltage

Ie

= 0.5 A

Is

= 50 mA

0.2

V

VSE (sat) *

Base-emitter
saturation voltage

Ie

= 0.5 A

Is

= 50 mA

1.1

V

hFE *

DC current gain

Ie = 20 mA V eE = 5V
V eE = 5V
Ie = 0.5 A
Ie = 20 mA V eE = 2V
Tease = -55'C

VeEO

fT

Transition frequency

Ie

= 100mA VCE = 10 V

C eso

Collector-base
capacitance

IE
f

= 0
Ves= 10 V
= 1 MHz

ton

Turn-on time

toft

Turn-off time

IS/b

**

Second breakdown
collector current

40
40
16

* Pulsed: pulse duration = 300 fLs, duty cycle
** Pulsed: 1 s, non repetitive pulse
477

MHz
30

0.2

1.5%

-

50

Ie = 0.5 A
Vee = 20 V
IS1 = -182 = 50 mA
VeE = 50 V

-

-

80

pF

0.3

fLs

1

fLs
A

DC current gain

Safe operating areas

G 2{'59

G 2464

I

IC '
(A) 6 IC MAX PULSED

*PUL SE OPERATION

IC MAX CONTINUOUS

\
Ims\ l00~s

VCE =5V

1\

100

-

-.

DC OPERATION

II IIII
10-'

,

....."

\

*FOR SINGLE NON
REPETITIVE PULSE

1\

\

50

\

.......

10-'

,

, 6'
10

,
10'

\

,.

,

o
10- 2

VCE (V)

•I

10-'

, 6'
IC (A)

Collector-emitter saturation voltage

DC transconductance
G

G

21056

IC

2451

VCE(sat)

...

(Al

\

(V)

f
f

0.6

I

I
hFE

= 10

I

0.4
hFE =10

f
f
f
I

0.2

/
./

o

0.5

I

-

/

/

, 6'
Ic (Al

VBE(sat) (V)

478

Transition frequency

Collector-base capacitance
G 2463

G - 24 61

CCBO

fT
(MHz)

(pF)

80

60

60

40

'"

/~

V

/

1\

1\

40

'\

\

\

1\

IE,O

\

VCE ,5V
20

"

20

, ,

, ,

o

10

,

B

IC (A)

,,

I"- r,

10'

10

Saturated switching characteristics
G

i',

,,

VCB (V)

Power rating chart
G- 2462

259811

t

Ptot

("s) ,

(W)

H-+-+-+-H-++-f---H4-+-+-+-H-++--l

hFE ,10
VCC ,20V
tp ,10"s

15

161'-1 62

r--- ~

10

~..

./

I"..
~

ton

""- ~

tf

, ,
10- 1

o

Ie (A)

479

50

100

150

Tc.se('C)

EPITAXIAL PLANAR NPN
HIGH CURRENT, GENERAL PURPOSE TRANSISTOR
The BUY 68 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is
used for high-current switching applications and in power amplifiers. The BUY 68 is
available in 3 hFE gain bands.

ABSOLUTE MAXIMUM RATINGS
V eBo
VeER
V eEo
V EBO

Ie

Ptot
Tstg

Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (R~E::; 10 Q)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Total power dissipation at Tamb .;;; 25°C
Tease';;; 50°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

DIAGR~~:

MECHANICAL DATA

6/77

100
V
80
V
60
V
6
V
7
A
1
W
10
W
-65 to 200°C
200
°a

Dimensions in mm

480

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

15
175

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
IcBO

Collector cutoff
current (IE = 0)

Test conditions

Min. Typ. Max. Unit

V CB = 60 V

1

f1A

V(BR) CBO * Collector-base
breakdown voltage
(IE = 0)

Ic

= 1 mA

100

V

V CER (sus!' Collector-emitter
sustaining voltage
(RBE = 10 \1)

Ic

= 50 mA

80

V

V CEO (sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

= 50 mA

60

V

V EBO *

Em itter -base
voltage
(I c =0)

IE

= 1 mA

6

V

V CE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

=2A
= 5A

IB
IB

= 0.2 A
= 0.5 A

VBE (sat) *

Base-emitter
saturation voltage

Ic
Ic

=2A
=5A

IB
IB

= 0.2 A
= 0.5 A

hFE *

DC current gain

Ic

= 0.1 A

VCE = 1 V
Group 6
Group 10
Group 16
VCE = 1 V
Group 6
Group 10
Group 16

Ic

fr

Transition frequency

Ic

= 0.5 A

CCBO

Collector-base
capacitance

IE
f

= 0
V CB = 10 V
= 1 MHz

ton

Turn-on time

toft

Turn-off time

*

= 1A

VCE = 5 V

Ic =5A
Vcc= 20 V
IB1 = -IB2 = 0.5 A

Pulsed: pulse duration = 300 f1s, duty cycle
481

1.5%

1
1.2
40
40
63
100
40
40
63
100

130
70
110
170
130
70
110
170

0.6
1

V
V

1.3
1.6

V
V

-

-

-

250
100
160
250

50

-

-

-

MHz
80

pF

0.35

f1s

0.75

f1s

j

I

I

DC current gain

Safe operating areas
6-2577

Ie 8
(A)

k

PULSE

MA

V

10'

PERATION

8

6

6

lms

........

'\

De OPERATION

VCE·IV

4

'"

-FOR SINGLE NDN
REPETITIVE PULSE

-

1

10'

\

>----

GROllP 16
i peAL
\0
[toR

8r=-~

ROllI'

;:"

6

6
4

r\

1

10
6

6

•

10

•

1

4

6 8

6

1

10-1

VeE (V)

4

6 6

Ic (A)

10

Base-emitter saturation voltage

Collector-emitter saturation voltage
G-2562

G-2S81

Ie

I
I

(A)

hFE=10

hFE =10

4
0.5

V

II

/
V
Ie

o

(A)

482

0.5

1.5 VBE(sat) (V)

Transition frequency

Collector-base capacitance

-

G 2519

'T
(MHz)

G-2568

eeB<.
(pF)

YeE=5V
.",...

r

~
100

v
/

50

/

t.....
60

V

V

40

/

20

o
10'"

Ie

20

(A)

40

60

Yee (V)

Power rating chart

Saturated switching characteristics

G-.2578

t

.plot

(ns) ,

(W),

l

"""""s......

I

r-...
10'

'"

t,

IL

I

10

I

-

"

ton

I'..

"

hFE=10

,

.

I'..

.......

VCC ·20V

18-_1]
1

10

1

IC

" I'-.

• (A)•

o

483

50

100

150

Tease (OC)

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The BUY 69A, BUY 69B, and BUY 69C are silicon multiepitaxial mesa NPN transistors in Jedec TO-3 metal case. They are intended for horizontal deflection
output stage of CTV receivers and high voltage, fast switching and industrial
applications.

ABSOLUTE MAXIMUM RATINGS
VCES
VCEO

VEBO
Ic
ICM

IB
Ptot
Tstg
Tj

BUY 69A BUY 69B BUY 69C

Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (tp ~ 10ms)
Base current
Total power dissipation at Tcase~25°C
Storage temperature
Junction temperature

1000V
400V

800V
500V
325V
200V
8V
10A
15A
3A
100W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGR~~

MECHANICAL DATA

Dimensions in mm

'COllector 60nnected to case

TO-3

5/80

484

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (Tease
Parameter
Collector cutoff
current (VBE = 0)

for BUY69A
for BUY69B
fs>r BUY6ge

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 8V

V CBO

Collector-base
voltage (IE = 0)

for BUY69A
for BUY69B
for BUY6ge

V CEO (Sus)'Collector-emitter
sustai n i ng voltage
(lB = 0)

,

°C/W

= 25°C unless otherwise specified)

Test conditions

ICES

1.75

Min. Typ. Max. Unit

VCE = 1000V
VCE = 800V
VCE = 500V

Ic = 1mA
Ic = 1mA
Ic = 1mA

Ic = 100mA
for BUY69A
for BUY69B
for BUY6ge

1
1
1

mA
mA
mA

1

mA

1000
800
500

V
V
V

400
325
200

V
V
V

Collector-emitter
saturation voltage

Ic = 8A

IB = 2.5A

3.3

V

Base-emitter
saturation voltage

Ic = 8A

IB = 2.5A

2.2

V

DC current gain

Ic = 2.5A

VCE = 10V

h

Transition
frequency

Ic = 0.5A

VCE = 10V

ISlb "

Second breakdown VCE = 25V
collector current

ton

Turn-on time

VCE (sat)

VBE (sat)
hFE

,

,

Ic = 5A
IB1 = 1A

485

15

-

10
4

VCE = 250V

MHz
A

0.2

f.Ls

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

ts

Storage time

Ie = 5A

tj

Fall time

161

tj

Fall time

Ie = 8A
161

=
=

-162

-1 62

VeE = 250V

= 1A
VeE = 40V

= 2.5A

Pulsed: pulse duration = 300fLS, duty cycle = 1.5 %
Pulsed: 1 s, non repetitive pulse
For characteristics curves see the BUW 34/5/6 series.

486

Min. Typ. Max. Unit
1.7

fLs

0.3

fLs
1

fLS

MULTIEPITAXIAL PLANAR NPN

LINEAR AND SWITCHING APPLICATIONS
The D44C1 to D44C12 are silicon multiepitaxial planar transistors in TO-220 plastic package
intended for linear and switching applications.

ABSOLUTE MAXIMUM RATINGS

D44C

044C

'(/l/3 .'41616
V CES
V CEO

VEBO
Ic
ICM

Ptot

Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current\~1'1 =
Total power dissipation'

40V
·30V
5V

D44C

70V
60V
5V

90V
80V
5V

4A
6A
30W
1,67W
-55 to 150°C
150°C

FS/i,'i

INTERNAL

55V
45V
5V

D44C

7/8/9 10/11/12

TIC DIAGRAM

,~'
E

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.
l,.amv.

487

10/82

THERMAL DATA
R!h j-case
R!h j-amb

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICES

*
, lEBO

max.
max.

Thermal resistance junction--case
Thermal resistance junction-ambient

Collector cutoff
current (V BE = 0)

V CE

=

Rated V CES

Emitter cutoff
current (Ic = 0)

V EB

=

5V

V CEO (sus) Collector--emitter
sustaining voltage

Ic = 100mA
for D44Cl-2-3
for D44C4-5-6
for D44C7-8-9
for D44Cl0-11-12

V CE(sa!) * Collector--emitter
saturation voltage

Ic = lA
IB = 50mA
for D44C2-3-5-6-8-9-11-12
Ic = lA
IB=O.lA
for D44Cl-4-7-10

V BE (sa!) * Base--emitter
saturation voltage

Ic = lA

hFE *

Ic = 0.2A
VCE
Ic = 2A
VCE
for D44C3-6-9-12
Ic = 0.2A
VCE
Ic = lA
VCE
for D44C2-5-8-11
Ic = 0.2A
VCE
Ic = 1A
VCE
for D44Cl-4-7-10

* Pulsed: pulse duration

= 300 fJ.S, duty cycle = 2%.

488

°C/W
°C;W

= 25°C unless otherwise specified)

Test conditions

DC current gain

4.2
75

Min. Typ. Max. Unit
10

fJ.A

100

fJ.A

V
V
V
V

30
45
60
80

IB = 100mA

0.5

V

0.5

V

1.3

V

= lV
= lV

40
20

120

-

= lV
= lV

100
20

220

-

= lV
= lV

25
10

MULTIEPITAXIAL PLANAR NPN

SWITCHING APPLICATIONS GENERAL PURPOSE
The D44H series are silicon multiepitaxial planar transistors and are mounted in Jedec
TO-220 plastic package.
They are intended for various switching and general purpose applications.

ABSOLUTE MAXIMUM RATINGS
V CEO
V EBO
Ic

Collector-emitter voltate (I B = OJ,
Emitter base voltage (Ic = 0)
Collector current

80V

ICM

P tot
Tstg

Tj

MECHANICAL DATA

Dimensions in mm

Collector conn",cted to tab.

<&:-.t
0.5
c-

489

'/,

TO-220

10/82

THERMAL DATA
Rth j-case

max.

Thermal resistance junction-case

2.5

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICBO

Collector cutoff
current (I E = 0)

VCB = Rated V CEO

10

J1A

lEBO

Emitter cutoff
current (I C = 0)

V EB = Rated V EBO

100

J1A

V CEO (sus) Collector-emitter
sustaining voltage

Ic = 100mA for
for
for
for

D44H1/2
D44H4/5
D44H7/8
D44H10/11

V CE (sat) * Collector-emitter
saturation voltage

Ic =SA
IB = O.4A
for D44H2/5/8/11
Ic =SA
IB = O.SA
for D44H1/4/7/10

1

V

1

V

IB = O.SA

15

V

V BE (sat)* Base-emitter
saturation voltage

Ic = SA

hFE *

Ic = 2A
VCE = lV
for D44H1/4/7/10
for D44H2/5/8/11
Ie = 4A
VCE = lV
for D44H1/4/7/10
for D44H2/5/8/11

DC current gain

* Pulsed: pulse duration = 300 JlS, duty cycle = 1.5%.

490

30
45
60
SO

V
V
V
V

35
60

--

20
40

-_.-

---<

MULTIEPITAXIAL PLANAR NPN

LINEAR AND SWITCHING APPLICATIONS
",

>i :."',':"

The D4401, D4403 and D4405 are silicon multiepitaxial planar tran9i~tors in TO-220
plastic package intended for linear and switching applications.
. ..
.

,

"i

,x

ABSOLUTE MAXIMUM RATINGS
V CBO
V CEO
V EBO

Ic
Ptot

.D¥01

Collector-base voltage (I E = Oi
Collector-emitter voltage (I B
Emitter-base voltage (I B =
Collector current

200V
125V
7V

MECHANICAL DATA

04403

04405

250V
175V
7V
4A
31.25W
1.67W
-55 to 150°C
150°C

300V
225V
7V

Dimensions in mm

Collector connected to tab.

TO-220

491

10/82

THERMAL DATA
max.
max.

Rth j-ease Thermal resistance junction--case
Rth j-amb. Thermal resistance junction--ambient

4
75

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICBO

Collector cutoff
current (I E = 0)

Test conditions

Min. Typ. Max. Unit

Rated VCEO

10

/1A

VCEO(SU~ Collector emitter
sustaining voltage

Ic = 10mA

VCE(sat) * Collector--emitter
saturation voltage

Ic = 2A

IB = 0.2A

1

V

VBE(Sat) * Base-emitter
saturation voltage

Ic = 2A

Is = 0.2A

1.3

V

hFE *

Ic = 0.2A
Ic = 2A

VCE = 10V
V cE =10V

DC current gain

for D44Q1
for D44Q3
for D44Q5

125
175
225

V
V
V

30
20

-

fT

Transition frequency

Ic = 100mA

VCE = 10V

20

MHz

CCBO

Collector base
capacitance

V CB = 10V

f = lMHz

32

pF

ton

Turn-in time

ts

Storage time

tl

Fall time

Vcc = 50V
Ic = lA
IB1 = -IB2 = O.lA
-

* Pulsed: pulse duration = 300 /1S, duty cycle = 2%.

492

0.4

/J.s

2

/1s

1.7

/1s

EPITAXIAL-BASE NPN/PNP
COMPLEMENTARY POWER DARLINGTONS
The MJ 900, MJ 901, MJ 1000 and MJ 1001 are silicon epitaxial-base transistors in
monolithic Darlington configuration, and are mounted in Jedec TO-3 metal case. They
are intended for use in power linear and switching applications.
The PNP types are the MJ 900 and MJ 901 and their complementary NPN types are the
MJ 1000 and MJ 1001 respectively.

ABSOLUTE MAXIMUM RATINGS

Vcso
VCEO
V ESO
Ie
Is
Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation at Tease ~ 25 'C
Storage temperature
Junction temperature

PNP'

MJ 900

NPN

MJ1000 MJ1001
60V
60V

MJ 901

80V
80V

5V
8A
0.1A
90W
-65 to 200 'C
200 'C

• For PNP types voltage and current values are negative

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-3

493

6/77

"~a

','

,

)

'"

,

~:"

,;

,1'

oJ

m'

,

"

=""

'"

~1"'0'";::/

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1.94

·C/W

ELECTRICAL CHARACTERISTICS· (Tease = 25·C unless otherwise specified)
Parameter
ICER

ICEO

IESO

Collector cutoff
current (ReE = 1kO)

Collector cutoff
current (Is = 0)

Emitter cutoff
current (Ie = 0)

VeEo (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Test conditions
for MJ900 and
VCE = 60 V
for MJ901 and
VCE = 80 V
Tease= 150·C
for MJ900 and
VCE = 60 V
for MJ901 and
VCE = 80 V

Min. Typ. Max. Unit

MJ1000
mA

1

mA

5

mA

5

mA

0.5

mA

0.5

mA

2

mA

MJ1000
MJ1001

for MJ900 and MJ1000
VCE = 30 V
for MJ901 and MJ1001
VCE = 40 V
VES = 5 V
Ic = 100mA
for MJ900 and MJ1000
for MJ901 and MJ1001

VCE(sat) *

Collector-emitter
saturation voltage

Ie
Ic

=3A
=8A

Is
Is

VSE *

Base-emitter voltage

Ic

=3A

V CE = 3 V

hFE *

DC current gain

Ie
Ic

=3A
=4A

VeE = 3 V
VCE = 3 V

60
80

= 12mA
= 40mA

* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
• For PNP types current and voltage values are negative
Fer characteiistic curves see iiie 2i~ 6G53i55 series
494

1
MJ1001

1000
750

V
V
2
4

V
V

2.5

V

-

EPITAXIAL-BASE NPN/PNP
COMPLEMENTARY POWER DARLINGTONS
The MJ 2500, MJ 2501, MJ 3000 and MJ 3001 are silicon epitaxial-base transistors in
monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are
intended for use in power linear and switching applications.
The PNP types are the MJ 2500 and MJ 2501 and the ir complementary NPN types are the
MJ 3000 and MJ 3001 respectively.

ABSOLUTE MAXIMUM RATINGS

PNp
NPN

VCBO
V CEO
VEBO
Ic
IB
Ptot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at Tease";;; 25°C
Storage temperature
Junction temperature

O

MJ2500 MJ2501
MJ3000 MJ3001

60V
60V

BOV
BOV

5V
10A
0.2A
150W
-65 to 200°C
200 °C

° For PNP types voltage and current values are negative

MECHANICAL DATA

Dimensions in mm

495

6/77

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1.17

°C/W

ELECTRICAL CHARACTERISTICS ° (Tease = 25°C unless otherwise specified)
Parameter
ICER

ICEO

lEBO

Collector cutoff
current (RBE = 1kQ)

Collector cutoff
current (lB = 0)

Emitter cutoff
current (lc = 0)

VCEO (sus) * Collector-emitter
sustaining voltage
(IB = 0)

Test conditions
for MJ2500 and
VCE = 60V
for MJ2501 and
VCE = 80 V
Tease = 150°C
for MJ2500 and
VCE = 60 V
for MJ2501 and
VCE = 80 V

Min. Typ. Max. Unit

MJ3000
mA

1

mA

5

mA

5

mA

1

mA

1

mA

2

mA

MJ3000
MJ3001

for MJ2500 and MJ3000
VCE = 30 V
for MJ2501 and MJ3001
VCE = 40 V
V EB = 5 V
Ic = 100mA
for MJ2500 and MJ3000
for MJ2501 and MJ3001

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

= 5A
= 10 A

IB
IB

V BE *

Base-emitter voltage

Ic

=5A

V CE = 3V

hPE*

DC current gain

Ic

=5A

VCE = 3 V

V
V

60
80

= 20mA
= 50mA

• Pulsed": pulse duration = 300 flS, duty cycle = 1.5%
o
For PNP types current and voltage values are negative
~Oi c~aiCictelisUc curves see ine 2N6u50 i 57 series
496

1
MJ3001

1000

2
4

V
V

3

V

-

EPITAXIAL·BASE PN P
POWER LINEAR AND SWITCHING APPLICATIONS
The MJ 2955 is a silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. It
is intended for power switching circuits, series and shunt regulators, output stages and
hi-fi amplifiers.

ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (RBE~ 100 Q)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation at T case~ 25 'c
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-100

v

-70

V
V
V
A

-60
-7

-15
-7
150
-65 to 200
200

A
W

'c
'C

DIAGR~~:

MECHANICAL DATA

Dimensions in mm

iI.,'
i.,

11

497

6/77

THERMAL DATA
R'h j-case

ELECTRICAL CHARACTERISTICS (T case

=
=

1.17

'C/W

= 25 'C unless otherwise specified)

Min. Typ. Max. Unit

Test conditions

Parameter
ICEX

max

Thermal resistance junction-case

-1
-5

mA
mA

-0.7

mA

-5

rnA

Collector cutoff
current (V8E = 1.5V)

VCE
VCE

ICEO

Collector cutoff
current (18 = 0)

VCE = -30 V

lEBO

Emitter cutoff
current (lc = 0)

V 8E

=

7V

VCER (sus) * Collector-emitter
sustaining voltage
(R8E = 100 S"l)

Ic

=

-200mA

-70

V

VCEO (sust Collector-emitter
sustaining voltage
(18 = 0)

Ic

=

-200mA

-60

V

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ie

=
=

-4 A
-10 A

18
18

V8E*

Base-emitter voltage

Ie

=

-4 A

VeE = -4 V

hFE*

DC current gain

Ie
Ie

=
=

-4 A
-10 A

VeE = -4 V
VeE = -4 V

20
5

fT

Transition frequency

Ic

=

-0.5A

VeE

=

4

*

-100V
-100V

T case = 150'C

=
=

Pulsed: pulse duration = 300 Jl.s, d!...!ty cyc~e = 1.5%
For characteristic curves see the 2N 5875 series

498

-0.4A
-3.3A

-10V

-1.1
-3

V
V

-1.8

V

70

MHz

EPITAXIAL-BASE NPN/PNP
GENERAL PURPOSE
The MJ4030/31/32/33/34/35 are medium-power silicon Darlington in Jedec TO-3 metal
case, intended for use in general purpose and amplifier applications.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
Ic
IB

Ptot
T stg
Tj

NPN
PNP*

Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at T case <;;;25°C
Storage temperature
Junction temperature

MJ4030
MJ4033

MJ4031
MJ4034

MJ4032
MJ4036

60V
60V

80V
80V
5V
16A
0.5A
150W
-65 to 200°C
200°C

100V
100V

* For NPN types voltage and current values are negative

INTERNAL SCHEMATIC DIAGRAMS
NPN , - - - - - - - - 1

I
B

PNP

I
I

B

I

I

_:J

Rl '" 5 Kn
R2'" 50n

MECHANICAL DATA

,-------1
I
I
I
I
I
I
I .,.
I

Rl'" 5 Kn

L ______ :J R2'" 50n

Dimensions in mm

499

10/82

THERMAL DATA
Rth j-case

max.

Thermal resistance junction-case

1.17

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter
ICED

Collector cutoff
current (18 = 0)

Test conditions
VCE = 30V
MJ4030/33
VCE = 40V
MJ4031/34
VCE = 50V
MJ4032/35

18 = 0
3

mA

3

mA

3

mA

5

mA

VC8 = 60V
VC8 = 80V
VC8 = 100V

1
1
1

mA
mA
mA

VC8 = 60V
VC8 = 80V
VC8 = 100V

5
5
5

mA
mA
mA

18 = 0
18 = 0

I E80

Emitter cutoff
current (Ic = 0)

V 8E = 5V

ICER

Collector cutoff
current (R 8E = 1 Kn)

for MJ4030/33
for MJ4031/34
for MJ4032/35
T case = 150° C
for MJ4030/33
for MJ4031/34
for MJ4032/35

Ic = 0

V(8R)CEO * Collector-emitter
Breakdown voltage

Ic = 100mA 18 = 0
for MJ4030/33
for MJ4031/33
for MJ4032/35

V CE(sat) * Collector-emitter
saturation voltage

Ic = lOA
Ic = 16A

18 = 40mA
18 = 80mA

V 8E *

Base-emitter voltage

Ic = lOA

VCE = 3V

hFE *

DC Current gain

Ic = lOA

VCE = 3V

* Pulsed: pulse duration =300 IlS, duty cycles';;; 2%.
For PNP types voltage and current values are negative.

500

Min. Typ. Max. Unit

60
80
100

V
V
V

4

V
V

3

V

2.5

1000

-

EPITAXIAL PLANAR NPN
HIGH POWER FAST SWITCHING
The MJ10004/10005 are silicon darlington transistors with integrated" ,
up diode, mounted in Jedec TO-3 metal case designed for high'
plications. The MJ10004P and MJ10005P are mounted in SOT ~"

ABSOLUTE MAXIMUM RATINGS
VCEO
V CEX
V CEV
V EBO

Ic
ICM
IB
IBM

MJ1004P/5P

Collector-emitter voltage (lB = 0)
Collector-emitter voltage (V BE = -5V
Collector-emitter voltage (V BE = 1
Emitter-base voltage (lc = 0) .
Collector current
Collector peak current
Base current
Base peak current

400V
450V
500V
BV
20A
30A
2.5A
5A
SOT-93
TO-3
175W
150W
-65 to 200°C -65 to 175°C
200°C
175°C

Ptot
Tstg

Tj

INTERNA

-emitter speed;awitching ap·
ilar to TO-21B.

c
,------------,

~-I
RI Typ. lOOn
R2 Typ. 350n

MECHANICAL DATA

Dimensions in mm

501

10/B2

THERMAL DATA
Rth j-ease

max.

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS (Tcase

ICER

I cEv

lEBO

= 25°C unless otherwise specified)

Test conditions

Parameter
Collector cutoff
current (R BE = 50.12)

V CE = Rated V CEV
Tease = 100° C

Collector cutoff
current (V BE = 1.5V)

V CEV = Rated Value
V CEV = Rated Value
Tease = 150°C

Emitter cutoff
current (Ic = 0)

V EB

=

0.25

175 mA

2V

V CEX (sus) Collector-emitter
sustaining voltage
(V BE = -5V)

Ic = 2A
V Clam p = Rated V CEX
Tease = 100°C
for MJ10004
for MJ10005
Ic = 10A
T case = 100°C
V Clamp = Rated V CEX
for MJ10004
for MJ10005
IB
Ic = 10A
Ic = 20A
IB
IB
Ic = 10A
T case = 100°C

= 400mA
= 2A
= 400mA

Ic = 10A
IB
Is
Ic = 10A
Tease = 100°C

=
=

(0) For MJ1 0004P/5P

= 5V max.
502

350
400

V
V

400
450

V
V

275
325

V
V

400mA
400mA
-

---

mA

5 mA

Ic = 250mA
V Clamp = Rated V CEO
for MJ10004
for MJ10005

V BE(sat) * Base-emitter
saturation voltage

Min. Typ. Max. Unit

5 mA

V CEO (sus) Collector-emitter
sustaining voltage
IB = 0)

V CE(sat) * Collector-emitter
saturation voltage

°C/W

- - ---- -----

- ---

1.9
(°)3

V

2.5

V

2.5

V

2.5

V

V

ELECTRICAL CHARACTERISTICS (Tease
Parameter

= 25°C unless otherwise specified)

Test conditions

hFE *

DC current gain

Ie = 5A
Ie = lOA

Vf*

Diode forward voltage

IF

hfe

Small-signal
current gain

Ie = lA
f test = 1 MHz

Output capacitance

V eB = 10V
IE = 0
f test = 100MHz

Cob

ton

Turn--on time

t,

Rise time

tf

Fall time

=

VeE = 5V
VeE = 5V

Min. Typ. Max. Unit
50
40
3

lOA
VeE

=

503

--

5

V

10V

Vee = 250V Ie = lOA
IB1 = -IB2 = 400mA
V BE(off) = 5V
tp = 50Jls duty cycle -2%

*Pulsed: pulse duration = 300 Jl duty cycle = 1.5%.

600
400

-

10

325

pF

0.22

0.8

JlS

0.6

1.5

Jls

0.15

0.5

Jls

100

r---

EPITAXIAL-BASE NPN/PNP

GENERAL PURPOSE
The MJll0ll/12/13/14/15/16 are silicon transistors in Darling
TO-3 metal-case. Intended for general purpose and amplifier

ABSOLUTE MAXIMUM RATINGS

V C80

VCEO
V E80

Ic
18
Ptot
Tstg

Tj

Collector-base voltage (I E =
Collector-emitter voltage (I
Base-emitter voltage (lc =
Collector current
Base current
Total power di
Storage te
Junctio

MJ11015
MJ11016

0)

90V
90V
5V
30A
lA
200W
-65 to 20QoC
200°C

120V
120V

* For PNP t

NPN
•

c

PNP

r~~-----l

I

• I

I

I

I
I

i

I
R
R
I Rl '" 8Kn
L __ ~~_~:J R2 '" 60n

MECHANICAL DATA

10/82

I~~-----

:

L __ ~~_

Rl'" 8Kn
R2 '" 60n

Dimensions in mm

504

THERMAL DATA
Rth

j-ease

Thermal resistance junction-case

max

ELECTRICAL CHARACTERISTICS (Tease
Parameter

0.87

°C/W

= 25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

I CEO

Collector cutoff
current (I B = 0)

VCE = 50V

1

mA

lEBO

Emitter cutoff
current (I C = 0)

V BE = 5V

5

mA

ICER

Collector cutoff
current (R BE = 1 Kn.)

for MJ11011/12
for MJ11013/14
for MJ11015/16
Tease = 150°C
for MJ11011/12
for MJ11013/14
for MJ11015/16

VCE = 60V
VCE = 90V
VCE = 120V

1
1

mA
mA
rnA

VCE = 60V
VCE = 90V
VCE = 120V

5
5

V(BR)CE;; Collector emitter
breakdown voltage

Ic = 100mA

= 0
MJ11011/12 60
MJ11013/14 90
MJ11015/16 120

VCE(sat) * Collector-emitter
saturation voltage

Ic = 20A
Ic = 30A

IB = 200mA
IB = 300mA

4

V
V

VBE(Sat) * Base-emitter
satu ration vo Itage

Ic = 20A
Ic = 30A

IB = 200mA
IB = 300mA

3.5
5

V
V

hFE *

Ic = 20A
I c = 30A

VCE = 5V
VCE = 5V

1000
200

Ic = lOA
f = 1MHz

VCE = 3V

4

hfe

DC current gain

Small signal
current gain

* Pulsed: pulse duration

IB
for
for
for

= 300 j1S, duty cycle = 1.5%

For PNP devices voltage and current values are negative.

505

1

5

rnA
mA
mA

V
V
V

3

--

-

EPITAXIAL PLANAR NPN/PNP

HIGH VOLTAGE POWER TRANSISTOR
The MJE340/MJE350 are silicon epitaxial planar transistors in jed
intended for use in medium power linear and switching applicati

tic package

ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (I B =
Emitter-base voltage (lc = 0
Collector current
Total power dissipati
Storage tempera
Junction te

V CEO
V EBO

Ic
Ptot
Tstg
Tj

300

V

3

V

0.5
A
20.8
W
-65 to 150°C
150 °C

INTER

MECHANICAL DATA

Dimensions in mm

2.7"""

09"'""
.

1.2
Q58

.~.

.'

'~~.f~~'hin,.t~1ii ~fhe6-~. .~~·of th.lea~s i$·un<;bnv~.\~d·:

10/82

506

THERMAL DATA
Rth

j-ease

Thermal resistance junction-case

max.

ELECTRICAL CHARACTERISTICS (Tease
Parameter

6.0

°C/W

= 25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

ICBO

Collector cutoff
current (I B = 0)

V CB = 300V

100

J1A

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 3V

100

J1A

V CEO (sus) Collector-emitter
sustaining voltage
(I B = 0)
hFE

DC current gain

Ic = 50mA

VCE = 10V

* Pulsed: pulse duration = 300 IlS, duty cycle";;; 2%.
For PNP types voltage and current values are negative.

507

V

300

Ic = 1mA

30

240

-

EPITAXIAL-BASE NPN/PNP
MEDIUM POWER DARLINGTONS
The MJE 700, MJE 701, MJE 702, MJE 703, MJE 800, MJE 801, MJE 802 and MJE 803 are
silicon epitaxial-base power transistors in monolithic Darlington configuration and
are mounted in Jedec TO-126 plastic package,
They are intended for use in medium power linear and switching applications,
The PNP types are the MJE 700, MJE 701, MJE 702 and MJE 703 and their complementary NPN types are the MJE 800, MJE 801, MJE 802 and MJE 803,

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO
V EBO
Ic
IB
P tot
Tstg
Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at Tease";; 25 'C
Storage temperature
Junction temperature

PNP'

MJE700 MJE702
MJE701 MJE703

NPN

MJE800 MJE802
MJE801 MJE803

60V
60V

80V
80V

5V
4A
O,lA
40W
-65 to 150 'C
150 'C

, For PNP devices voltage and current values are negative

MECHANICAL DATA

10/82

Dimensions in mm

508

THERMAL DATA
Rth I-case

max

Thermal resistance junction-case

3.13

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
0

Parameter
ICBO

ICEO

lEBO

Collector cutoff
current (I E= 0)

Collector cutoff
current (lB = 0)

Emitter cutoff
current (lc = 0)

V CEO (sus) * Collector-emitter
sustaining voltage
(lB = 0)

VCE (sat) *

Collector-emitter
saturation voltage

Test conditions
for MJE 700,
MJE 800,
V CB = 60 V
V CB = 60 V
for MJE 702,
MJE 802,
V CB = 80 V
V CB = 80 V
for MJE 700,
MJE 800,
VCE = 30 V
for MJE 702,
MJE 802,
V CE = 40 V

Min. Typ. Max. Unit

MJE 701,
MJE 801
Tease = 100°C
MJE 703,
MJE 803
Tease = 100°C

fJ.A
mA

200
2

fJ.A
mA

100

fJ.A

500

fJ.A

2

mA

MJE 701,
MJE 801
MJE 703,
MJE 803

V EB = 5 V
for MJE 700,
MJE 800,
Ic = 50 mA
for MJE 702,
MJE 802,
Ic = 50 mA

MJE 701,
MJE 801

for MJE 700,
MJE 800,
Ic = 4 A
for MJE 701,
MJE 801,
Ic =2A

MJE 702,
MJE 802
IB = 40mA
MJE 703,
MJE 803
IB = 40mA

509

100
2

60

V

80

V

MJE 703,
MJE 803

2.7

V

2.8

V

ELECTRICAL CHARACTERISTICS (continued)
Test conditions

Parameter

VSE *

hFE *

hIe

Sase-emitter voltage

DC current gain

Small signal
current gain

for MJE 700,
MJE 800,
Ic = 1.5 A
for MJE 701,
MJE 801,
Ic =2A

MJE 702,
MJE 802
VCE = 3 V
MJE 703,
MJE 803
VCE = 3 V

for MJE 700,
MJE 800,
Ic = 4 A
for MJE 701,
MJE 801,
Ic =2A

MJE 702,
MJE 802
VCE = 3 V
MJE 703,
MJE 803
VCE = 3V

= 1.5 A
= 1 MHz

VCE = 3 V

Ic
f

= 300 [Ls, duty cycle = 1.5%
For PNP devices voltage and current values are negative
For characteristic curves see the 2N 6034/2N 6039 series
* Pulsed: pulse duration

o

510

Min. Typ. Max. Unit

2.5

V

2.5

V

110

-

750

-

1

-

MULTIEPITAXIAL BIPLANAR NPN

LINEAR AND SWITCHING APPLICATIONS
The MJE 13002 and MJE 13003 are silicon multi epitaxial biplanar transistors in TO-126
plastic package intended for linear and switching applications.

ABSOLUTE MAXIMUM RATINGS
VCSO

V CEO
V ESO
Ic
I CM (*)
Is
I SM (*)

Ptot

MJE13002 MJE13003

Collector-base voltage (IE = OJ
Collector-emitter voltage (I S = OJ
Emitter-base voltage (I C = OJ
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation at T case < 25°C
Tamb< 25°C
Junction, Storage temperature

700V
400V

600V
300V
9V
1.5V
3A
0.75A
1.5A
40W

l.4W
-65 to 150°C

* Pulse width = 5msec., duty cycle < 10%.

INTERNAL SCHEMATIC DIAGRAM

"4'

E

MECHANICAL DATA

Dimensions in mm

e
1.2
o.S8

4.4

TO-126 (SOT -321

(1) Wit\:lIn thIs regiOn ,t~~rOSS-$eCtiQn of the Ie-ads is uncontrolle-d

511

10/82

THERMAL DATA
Rth j-ease
Rth j-amb

max.
max.

Thermal resistance junction-case
Thermal resistance junction- ambient

3.12
89

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICES

lEBO

Collector cutoff
current (V BE = 0)

Emitter cutoff
current (lc = 0)

Min. Typ. Max. Unit

Test conditions
for MJE13002
for MJE13003
T case = 100° C
for MJE13002
for MJE13003

V CES = 600V
V CES = 700V

1
1

rnA
rnA

V CES = 600V
V CES = 700V

5
5

rnA
rnA

1

rnA

V EB = 9V
for MJE13002
for MJE13003

V
V

300
400

V CEo(susi Collector-emitter
sustaining voltage

Ic = 10mA

V CE(sat) * Collector-emitter
saturation voltage

Ic =
Ic =
Ic =
Ic =
T case

0.5A
1A
1.5A
1A
= 100° C

IB = 0.1A
IB = 0.25A
IB = 0.5A
IB = 0.25A

0.5
1
3
1

V
V
V
V

VBE(Sat) * Base-emitter
saturation voltage

Ic =
Ic =
Ic =
T case

0.5A
1A
1A
= 100°C

IB
IB
IB

= 0.1A
= 0.25A
= 0.25A

1
1.2
1.1

V
V
V

hFE *

DC current gain

Ic = 0.5A
Ic = 1A

VCE = 2V
VCE = 2V

8
5

40
25

-

fT

Transition frequency

VCE = 10V
Ic = 100mA

f = 1MHz

5

C CBO

Collector-base
capacitance

V CB

= 10V
I

512

-

10

MHz

30

pF
I

I

ELECTRICAL CHARACTERISTICS (continued)
Test conditions

Parameter
t,

Rise time

ts

Storage time

tf

Fall time

tsv

Voltage storage time

tc

Commutation time

Min. Typ. Max. Unit

Resistive load
Vee = 125V
Ie = 1A
lSI = -ls2 = 0.2A
Inductive load
Ie = 1A
lSI = 0.2A
VSE(off) = 5V
L = 50mH
Velamp = 300V

0.24

1

p's

1.7

4

p.s

0.5

1

p's

0.8

4

p's

0.1

0.75

p.s

* Pulsed: pulse duration = 300 p.s, duty cycle = 2%

Safe operating areas

G - 48'2

IC
(A)

IC MAX PULSED
I

1\

\

\\

lCMAX CONT.

r--..

O.lms

\

I III
0.5ms_
1 ms

-,

D.C.OPERAT ION

10

,
!

"'\. "\. \
~ '\

MJE13003
jJ E13002r

"'

I

5

8

2

10

10

513

6

8

VCE (V)

DC current gain

DC current gain
G

~-

-

1

E

~

t---

.

=e~-

~

i!

, ,

III
•

~

, 6'

1

10

T

, 6'

102

IC IA)

Collector-emitter saturation voltage

1----;

-

.~
1-'\-'1

t
10

j

I

~-

~- rIi -

----- -

---'-

r+

I.'

.-

-.;:

t-----t
10

r-----

~F'"
-

2

4

-~40'i::

2~f
[

12S'C.

--

6

tI

Ii

10 1

,

hFE

f--

G- "803

I

IV)

~5

~ll

0.6

a

Collector-emitter saturation voltage
veElsat )

II

I V)

6

ICIA)

G lo802

VeE(Sdl )

801

VCE ~ 5 V

~~

-

10'
a

I,

I
I

\

I

!
!

1.SA

0.4

125 'C
-40'C
25' C

~

--~

0.2

\
')

l.J

~ :...-

o
10'

~

'e O.1A

I

\
\

\

\

o

1\

\
\

.1
\

05

\
\

1A

QlA

osA]

l-

II

['I

-1

10

10

514

la lmA )

Collector-base capacitance

Base-emitter saturation voltage
G

T

j)

4

e 04

G

Ceso.

I

hFE: 5

k:

(pF) •

f---f----

V

1,41
rJ

-

=

p.... .-

Pi,..-

-40·C

-

.........
f---- --

1

p

w-~

-~

'---- -

, .........

10

~~CI V
12;.:5 Fr

480~

I-

0.5

e--

o

III

-,

-I

10

10

Saturated switch ing characteristics
G_4606
(inductive load)

(1':)

4

Saturated switching characteristics
(inductive load)

=-------I---l--l--I--t~

VSE:O

T,

l~----~---:-t-1

•10

1,
(/JS)' - - - - - - -

-

1 -._-

e-

1

I

~. _~~--:: ~ ___'LV_' ...
81=--------·

- -

+--

-----:,--:--

-k:~;'"

--~

8

1-' -

:;;;~~~f_F~~~
6--

t-~~--·------1-------------T-'-- ---

Vee .20V

i

z

Vc lo1mp 1; 300"
L .50mH

h FE ·5

515

If
( /JS)

Saturated switching characteristics
G_4B08
(inductive loadl
4 ~~_~ --~-"---1--~----,­

Saturated switch ing characteristics
G 4'Og
(resistive load)

-

I

(,.,01

- - - - - - - - - - - - f - - - - - - - ---

>;:

--

~-1=
2OOV
vcc·
fI--

hFE·5

._- f----

lSI' -I S2

--

r-- Is

1----------- ------- I----- b ~ j-...

f-----

1'.1'1'
--- -

--

r--...... ,",,-I10-'

Clamped reverse bias safe operating
areas
,
G-

,

S 3

IC
(A)

I

1-2

+~100.
~

IBI

I
0-8

lA

,

i

:
\

0.4

VBE(oft)5 v

"'"

j

MJE13002
MJE13003

o

100

200

300

400

500

;:+\"

600

VCE (V)

516

Ion

If

-

~

-

I-f--I--

I-

V

- ~v~

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The MJE 13004/13005 are silicon multiepitaxial mesa NPN transistorJlrfJedec TO-220
plastic package particularly intended for switch-mode applications,{

ABSOLUTE MAXIMUM RATINGS
V CEV

VCEO
VEBO

Ic
ICM
IB
IBM

Ptot
Tstg
Tj

MJE13004 MJE13005

Collector-emitter voltage
Collector-emitter voltage (I B'= 0)
Emitter-base (I c = 0)
Collector current
Collector peak current
Base cu trent
Base peak
Total power
Storage
Juncti

600V
300V

700V
400V
9V
4A
8A

2A
4A

75W
--65 to 150°C
150°C

INTER

MECHANICAL DATA

Dimensions in mm

Collector connected to tab,

kLJJi.

~~

517

10/82

THERMAL DATA
Rth

j-ease

Thermal resistance junction-case

max.

1.67

°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter
IcEv

lEBO

Collector cutoff
current (V BE = -1.5V)

Emitter cutoff
current (lc = 0)

Test conditions

Min. Typ. Max. Unit

for MJE13004
VCE=600V
VCE=600V Tease = 100°C
for MJE13005
VCE = 700V
VCE = 700V T case = 100 D C
V EB = 9V

1
5

mA
mA

1
5

mA
mA

1

mA

VCEO(sus) Collector-emitter
sustaining voltage
(I B = 0)

Ic = 10mA

for MJE13004
for MJE13005

VCE(sat) * Collector--emitter
saturation voltage

Ic = lA
Ic = 2A
Ic =4A

IB = 0.2A
IB = 0.5A
IB = lA

0.5
0.6
1

V
V
V

V BE(sat) * Base-emitter
saturation voltage

Ic = lA
Ic = 2A

IB = 0.2A
IB = 0.5A

1.2
1.6

V
V

Ic = lA
Ic = 2A

VCE = 5V
VCE = 5V

60
40

-

0.8

/1s

4

/1s

0.9

/1s

hFE
ton

DC current gain
Turn-on time

ts

Storage time

tf

Fall time

Ic = 2A
IBI = -IB2 = 0.4A
Vcc=250V

* Pulsed: pulse duration = 300 /J.S, duty cycle = 1.5%.

518

300
400

10
8

V
V

30

-

Safe operating areas

<==

Ie
(A)

G -- 482711

-

-_.-

.-

,:

!

IeMAX PULSED

10

:

eON1~ ~

leMAX

10 ,us
10QlJ_~
1 mS,t
10ms

H-

f------.
" ++i-It--. ~.
,~-':~ill

~ ~~~~GLE

-,

10

2

'-1--

'NON
~SE

REPETITIVE

4

~-F+H-H
I "i
I'
i

-'

B=
sF= 1=

-2

10

4

~ ...

----f-

m,-- HI
,I

-l

\'

I

.•.

,,1

rtl

I
!

~
,1\,\

4

I--- .

,

\

D.e.OPERTION

1- Area of permissible ope·
ration during turn-on
provided RBE ,.;;; 100n
and tp ,.;;; 0.25 /J.s.

<-1

PULSE OPERATIONoJ!
....
.

8

,

"olJ' ~,

~J

4

6 B

10

DC current gain

I-r-

:I

II

6 B

10

4

2

6 8

VeE(V)

Collector-emitter saturation voltage
t. 828

G

E

G t.829/1

veE(sat)
( V)

L-

1-

~I--10

--

...-

~

1.5

~t-\

!\

Tc .1~;:~ I
-30·C
V~.5V

J

I'

,i I,

'16'

z

,

..

II
4

1

.,
10

••

Ie (A)

519

.,

10

~'-+-+++-H+H
IT
IC (A)

Base-emitter saturation voltage

Collector-emitter saturation voltage
r"

VCE ( sat )

VBE(sat )
(V)

i

( V)

G

830

L.

I
,

1\
\

i

i

1"-,

i

~

v::v::: / '

\

'\

I"

,

V\..
~/

-

I

"-

r-....

0.5

" .....
o

0.5

Saturated

i

-----,"

I

~,

r-...

125'C

f---

\

\

o-i~:~

,

1\
'\
!\..

\

TC

1.5

r-

-,

1A

/ ' /' V

tt

-r

~~

IC

/ / ' 2A

~

I

-~

--

-,

Saturated

switching characteristics
~

'-

10

IB(A)

G

switching

characteristics

e3 2

·483

t

)

10

!

L

.-

Vcc,.iso\j-

=lTc

·'=t::

'-f

'

-

,

--- -

,-'-

".

I

10

Tc -125°C

-

-

..............

tt

..
,

....

.,,-

,--=~

'-':~i""-'

-t---'--~

,I"'""

-+--+-i

ton
!

I

i

I

1

--+-.

..... ts

:---+ r.L

-T . .). .

Vee" 250V
hfE= 5
'82 ::-2IS1

I

i

~"'-m

!

··
-,

- I-

4--J=-t

',-'

_ts

-- i

10

"+- 4-

"

IB2

~-

Ips )

1----'-+

hFE= 5

I

t. 83 1

-,

; i

10

520

............

tt

/'
ton

"'"

Saturated

switching

Clamped reverse bias safe operating
areas
G· 4S 3 5 11

characteristics
Ie
(A )

\
SEE

TEST CI CUlT

't
Ion
10'05

l..-·J·....

-1

E>

10
Ie (A)

10

Clamped ES/b test circuit
40V

TEST CONDITIONS;

500

5v;.I-V BB !;'2V

}JH

lc\IB ;.4
21 B1 ?I-I B 21 ?IB1
tp =adjusted for
nominal Ie
RBB=adjusted for
IB2

5-5388

521

2

VCE(clamp)(V)

MULTIEPITAXIAL MESA NPN
MOTOR CONTROL, SWITCH REGULATORS
The MJE13006, MJE13007 and MJE13007A are silicon multi epitaxial m
They are mounted in Jedec TO-220 plastic package, intended
switching regulator's etc.

ABSOLUTE MAXIMUM RATINGS
V CEO
V CEV
V EBO
Ic
ICM
IB
IBM
IE
IEM

Ptot
Tstg
Tj

Collector-emitter voltage (I B = 0)
Collector-emitter voltage
Emitter-base voltage (Ic =
Collector current
Collector peak current
Base current
Base peak current
Emitter current
Emitter peak cu
Total power
Storage t
Juncti

400V
700V
9V
8A
16A
4A
8A
12A
24A
80W
-65 to 150°C
150°C

or

400V
850V

INTER

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.

to.-22O

10/82

522

THERMAL DATA
Rth j-ease

max.

Thermal resistance junction-case

1.56

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

IEso

Emitter cutoff
current (I c = 0)

VES = 9V

IcEv

Collector cutoff
current

VCEV = Rated value
VSE(Off) = 1.5V
VCEV = Rated value
VSE(off) = 1.SV
T case = 100"C

Ie = a

VCEO (sus; Collector-emitter
sustaining voltage

Ic = lamA
Is =0
for MJE13006
for MJE13007/13007A

VCE(sat) * Collector-emitter
saturation voltage

Ic =2A
Ic =5A
Ic =8A
Ic =5A
Tease = 100°C

VSE(sat) * Base-emitter
saturation voltage

Min. Typ. Max. Unit

Is
Is
Is
Is

Ic =2A
Ic =5A

fT

Transition frequency

Ic = 500mA VCE = 10V
f = 1MHz

COb

Output capacitance

Vcs = 10V
f = O.lMHz

ton

Turn-on time

ts

Storage time

tf

Fall time

VCE = SV
VCE = SV

IE = 0

Vcc = 12SV Ic =5A
IS1 = IS2 = 1A
tp = 25/J.s
Duty Cycle < 1%

* Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%.
523

1

mA

5

mA
V
V

Is = O.4A
Ic =2A
Is = lA
Ic =5A
Is = lA
Ic =SA
Tease = 100°C

DC current gain

mA

300
400

= O.4A
= lA
=2A
= lA

hFE *

1

1
1.5
3

V
V
V

2

V

1.2
1.6

V
V

1.5

V

40
30

8
6

-

MHz

4

pF

110
1.1

/J.s

3

p.s

0.7

/J.s

EPITAXIAL-BASE NPN

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 29, TIl? 29A, TIP 29B and TIP 29C are silicon epitaxial-base NPN power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary PNP types are the TIP 30, TIP 30A, TIP 30B and TIP 30C.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
Ic
ICM

IB
Ptot

TIP 29 TIP 29A TIP 29B TIP 29C

Collector-base voltage (IE= 0)
Collector-emitter voltage (IB= 0)
Emitter-base voltage (Ic= 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease";; 25°(
Tamb ,,;;25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC OIAGR:

40V
40V

:
4

MECHANICAL DATA

60V
60V

80V
80V

100V
100V

5V
1A
3A

O.4A
30W
2W
-65 to 150°C
150°C

Dimensions in mm

·····~.:.220
5/80

524

THERMAL DATA
Rth j-ease
Rth j-amb

ELECTRICAL CHARACTERISTICS (Tease

Collector cutoff
current (16 = 0)

Collector cutoff
current (V6E = 0)

for
for
for
for

IE60

Emitter cutoff
current (Ic = 0)

V E6

TIP
TIP
TIP
TIP

29
29A
29B
29C

VCE
VCE
VCE
VCE

Ic = 30mA
for TIP 29
for TIP 29A
for TIP 29B
for TIP 29C

VCE (sat) * Collector-emitter
saturation voltage

Ic

= 1A

16

V6E (on) * Base-emitter
voltage

Ic

= 1A

hFE *

Ic
Ic

hIe

Small signal
current gain

= 40V
= 60V
= 80V
= 100V

= 5V

V CEO (sus)* Collector-emitter
sustaining voltage
(16 = 0)

DC current gain

°C/W
°C/W

Min. Typ. Max. Unit

for TIP 29 and TIP 29A
VCE = 30V
for TIP 29B and TIP 29C
VCE = 60V

ICES

4_17
62_5

= 25°C unless otherwise specified)

Test conditions

Parameter
ICEO

max
max

Thermal resistance junction-case
Thermal resistance junction-ambient

0.3

mA

0.3

mA

0.2
0.2
0.2
0.2

mA
mA
mA
mA

1

mA

40
60
80
100

V
V
V
V

= 125mA

0.7

V

VCE

= 4V

1.3

V

= 0.2A
= 1A

VCE
VCE

= 4V
= 4V

Ic = 0.2A
f = 1KHz
Ic = 0.2A
f = 1 MHz

VCE

= 10V

VCE

= 10V

* Pulsed: pulse duration = 300J-ts, duty cycle

525

40
15

75

-

20

-

3

-

~2%.

I ·~
!,j

EPITAXIAL-BASE PNP

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 30, TIP 30A, TIP 30B and TIP 30C are silicon epitaxial-base PNP power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary NPN types are the TIP 29, TIP 29A, TIP 29B and TIP 29C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEO
V EBO

Ie
leM
IB

Ptot

TIP 30 TIP30A TIP30B TIP30C

Collector-base voltage (IE = 0)
-40V
Collector-emitter voltage (IB = 0)
-40V
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-100V
-100V

-O.4A
30W
2W
-65 to 150°C
150°C

DIAGR:~:

MECHANICAL DATA

5/80

-60V
-80V
-60V
-80V
-5V
-1A
-3A

Dimensions in mm

526

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICEO

Co Ilecto r-cutoff
current (IB = 0)

=

for
for
for
for

TIP
TIP
TIP
TIP

lEBO

Emitter cutoff
current (Ie = 0)

V EB

=

30
30A
30B
30e

VeE
VeE
V CE
VCE

Ic = -30mA
for TIP 30
for TIP 30A
for TIP 30B
for TIP 30e

VCE (sat) * Collector-emitter
saturation voltage

Ic

=

-1A;

IB

VBE (on) * Base-emitter
voltage

Ic

=

-1A

hFE *

Ic
Ie

hIe

Small signal
current gain

=
=
=
=

-40V
-60V
-80V
-100V

-5V

VCEO (sus)*Collector-emitter
sustaining voltage
(IB = 0)

°C/W
°C/W

Min. Typ. Max. Unit

for TIP 30 and TIP 30A
VCE = -30V
for TIP 30B and TIP 30e
VCE = -60V

Collector cutoff
current (VBE = 0)

4.17
62.5

25°C unless otherwise specified)

Test conditions

ICES

DC current gain

max
max

-0.3

mA

-0.3

mA

-0.2
-0.2
-0.2
-0.2

mA
mA
mA
mA

-1

mA

-40
-60
-80
-100

=

V
V
V
V

-125mA

-0.7

V

V CE

=

-4V

-1.3

V

= -0.2A
= -1A

VCE
VCE

=
=

-4V
-4V

Ic = -0.2A
f = 1KHz
Ic = -0.2A
f = 1 MHz

VCE

=

-10V

VCE

=

-10V

* Pulsed: pulse duration = 300JLs, duty cycle :;;;;2%.
527

40
15

75

-

20

-

3

-

EPITAXIAL-BASE NPN

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 31, TIP 31A, TIP 318 and TIP 31 C are silicon epitaxial-base NPN power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary PNP types are the TIP 32, TIP 32A, TIP 328 and TIP 32C.

ABSOLUTE MAXIMUM RATINGS

TIP31 TIP31A TIP31B TIP31C

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak cu rrent
8ase-cu rrent
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

VCSO

VCEO
VESO
Ic
ICM

Is

P tot
Tstg
Tj

40V
40V

60V
60V

80V
80V

100V
100V

5V
3A
5A
1A
40\1\,
2W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR~4'

E

MECHANICAL DATA
,
,

Dimensions in mm

,

'<'

, eollectqr Cqnneetedto tab.

5/80

528

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter
Collector cutoff
current (IB = 0)

ICEO

for
for
for
for

lEBO

Emitter cutoff
current (Ic = 0)

V EB

TIP
TIP
TIP
TIP

31
31A
318
31C

VCE
VCE
VCE
VCE

Ic = 30mA
for TIP 31
for TIP 31A
for TIP 318
for TIP 31C

VCE (sat) * Collector-em itter
saturation voltage

Ic

= 3A

IB

Base-emitter
voltage

Ic

= 3A

DC current gain

Ic
Ic

hFE *
hIe

Small signal
current gain

=
=
=
=

40V
60V
80V
100V

= 5V

VCEO (sus) * Co Ilector-em itter
sustaining voltage
(lB = 0)

(on) *

°C/W
°C/W

Min. Typ. Max. Unit

for TIP 31 and TIP 31A
VCE = 30V
for TIP 318 and TIP 31C
VCE = 60V

Collector cutoff
current (VBE = 0)

3.12
62.5

= 25°C unless otherwise specified)

Test conditions

ICES

VBE

max
max

0.3

rnA

0.3

rnA

0.2
0.2
0.2
0.2

rnA
rnA
rnA
rnA

1

rnA

40
60
80
100

V
V
V
V

= 375mA

1.2

V

VCE

= 4V

1.8

V

= 1A
= 3A

VCE
VCE

= 4V
= 4V

50

-

Ic = 0.5A
f = 1KHz
Ic = 0.5A
f = 1 MHz

VCE

= 10V

VCE

= 10V

* Pulsed: pulse duration = 300JLs, duty cycle 0;;;2%.

529

25
10
20

-

3

-

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 32, TIP 32A, TIP 328 and TIP 32C are silicon epitaxial-base PNP power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary NPN types are the TIP 31, TIP 31A, TIP 318 and TIP 31 C.

ABSOLUTE MAXIMUM RATINGS
VC60
VCEO

VE60
Ic
ICM

16
Ptot

TIP32 TIP32A TIP32B TIP32C

Collector-base voltage (lc = 0)
-40V
Collector-emitter voltage (16 = 0)
-40V
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
8ase-cu rrent
Total power dissipation at Tease ~ 25°C
Tamb ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-100V
-100V

DlAGR~~:

MECHANICAL DATA

5/80

-60V
-80V
-60V
-80V
-5V
-3A
-5A
-1A
40W
2W
-65 to 150°C
150°C

Dimensions in mm

530

THERMAL DATA
Thermal resistance junction-case
Thermal resistance junction-ambient

Rth j-ease
Rth j-amb

max
max

3.12
62.5

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICEO

Test conditions

Collector cutoff
current (Is = 0)

for TIP 32 and TIP 32A
VCE = -30V
for TIP 328 and TIP 32C
VCE = -60V

ICES

Collector cutoff
current (VSE = 0)

for
for
for
for

IESO

Emitter cutoff
current (Ic = 0)

V ES = -5V

VCEO (sus) 'Collector-em itter
sustaining voltage
(Is = 0)

VCE (sat)
VSE (on)
hFE
hfe

.

.

Min. Typ. Max. Unit

TIP
TIP
TIP
TIP

32
32A
328
32C

VCE
VCE
VCE
VCE

=
=
=
=

-40V
-60V
-80V
-100V

Ic = -30mA
for TIP 32
for TIP 32A
for TIP 328
for TIP 32C

-0.3

rnA

-0.3

rnA

-0.2
-0.2
-0.2
-0.2

rnA
rnA
rnA
rnA

-1

rnA

-40
-60
-80
-100

V
V
V
V

Collector-emitter
saturation voltage

Ic = -3A

Is = -375mA

-1.2

V

Base-emitter
voltage

Ic = -3A

VCE = -4V

-1.8

V

DC current gain

Ic = -1A
Ic = -3A

VCE = -4V
VCE = -4V

Ic = -0.5A
f = 1KHz
Ic = -0.5A
f = 1 MHz

VCE

Small signal
current gain

• Pulsed: pulse duration

= 300JLs,

duty cycle
531

= -10V

25
10

-

20

-

3

-

VCE = -10V
~2%.

50

EPITAXIAL-BASE NPN

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 41, TIP 41A, TIP 41 B, and TIP 41 C are silicon epit~xial-base NPN power
transistors in Jedec TO-220 plastic package intended for use in medium power
linear and switching applications.
The complementary PNP types are the TIP 42, TIP 42A, TIP 42B and TIP 42C
respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO
VCEO

VEBO
Ic
ICM

Is

Ptot

TIP41

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation atTcase~25°C
Tamb~25°C

Tst9

Tj

Storage temperature
Junction temperature

40V
40V

TIP41A TIP416 TIP41C
60V
60V

80V
80V

100V
100V

5V
6A
10A
3A
65W
2W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR~~

Dimensions in mm

MECHANICAL DATA

5/80

532

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease

Collector cutoff
current (Is = 0)

Collector cutoff
current (VSE = 0)

forTIP41
forTIP41A
forTIP41B
forTIP41C

IESO

Emitter cutoff
current (Ic = 0)

V ES

VCE
VCE
VCE
VCE

= 40V
= 60V
= 80V
= 100V

= 5V

VCEO(SUS) * Collector-emitter
sustaining voltage
(Is = 0)

Ic = 30mA
for TIP41
forTIP41A
forTIP41B
forTIP41C

VCE (sat) * Collector-em itter
saturation voltage

Ic

= 6A

Is

V SE *

Base-emitter
voltage

Ic

= 6A

VCE

= 4V

hFE *

DC current gain

Ic
Ic

= 0.3A
= 3A

VCE
VCE

= 4V
= 4V

Ic
f
f

= 0.5A
= 1KHz
= 1MHz

VCE

= 10V

hIe

Small signal
current gain

0.7

mA

0.7

mA

0.4
0.4
0.4
0.4

mA
mA
mA
mA

1

mA

40
60
80
100

= 0.6A

* Pulsed: pulse duration = 300J.ts, duty cycle ~ 2%

533

°C/W
°C/W

Min. Typ. Max Unit

for TIP41 and TIP41A
VCE = 30V
forTIP41B and TIP41C
VCE = 60V

ICES

1.92
62.5

= 25°C unless otherwise specified)

Test conditions

Parameter
ICEO

max
max

30
15
20
3

V
V
V
V
1.5

V

2

V

75

-

EPITAXIAL-BASE PNP

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The TIP 42, TIP 42A, TIP 42B and TIP 42C are silicon epitaxial-base PNP power
transistors in Jedec TO-220 plastic package, intended for use in medium power
linear and switching applications.
The complementary NPN types are the TIP41, TIP 41A, TIP41B and TIP41C
respectively.

ABSOLUTE MAXIMUM RATINGS
Veso
VeEO

VESO
Ie
ICM
Is
Ptot

TIP 42 TIP 42A TIP 428 TIP 42C

Collector-base voltage (IE = 0)
-40V
Collector-emitter voltage (Is = 0)
-40V
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

-60V
-80V
-60V
-80V
-5V
-6A
-10A

-100V
-100V

-3A
65W
2W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR~~

Dimensions in mm

MECHANICAL DATA

5/80

534

THERMAL DATA
Rth j-ease
Rth j-amb

max
max

Thermal resistance junction-case
Thermal resistance junction-ambient

1.92
62.5

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Test conditions

Parameter
ICEO

Collector cutoff
current (IB = 0)

Min. Typ. Max. Unit

for TIP 42 and TIP 42A
VCE = -30V
for TIP 428 and TIP 42C
VCE = -60V

TIP
TIP
TIP
TIP

42
42A
428
42C

ICES

Collector cutoff
current (V BE = 0)

for
for
for
for

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -5V

VCE
VCE
VCE
VCE

=
=
=
=

-40V
-60V
-80V
-100V

-0.7

rnA

-0.7

rnA

-0.4
-0.4
-0.4
-0.4

rnA
rnA
rnA
rnA

-1

rnA

VCEO (Sus)*Coliector-emitter
sustaining voltage
(IB = 0)

Ic = -30mA
for TIP 42
for TIP 42A
for TIP 428
for TIP 42C

VCE (sat) * Collector-emitter
saturation voltage

Ic = -6A

IB = -0.6A

-1.5

V

VBE (on) * Base-emitter
voltage

Ic = -6A

VCE = -4V

-2

V

hFE *

Ic = -0.3A
Ic.= -3A

VCE = -4V
VCE = -4V

75

-

Ic = -0.5A
f = 1KHz
Ic = -0.5A
f = 1 MHz

VCE = -10V

hie

DC current gain
Small signal
current gain

-40
-60
-80
-100

20

-

3

-

VCE = -10V

* Pulsed: pulse duration = 300I-l-S, duty cycle :;::;2%.

535

30
15

V
V
V
V
I.

MULTIEPITAXIAL PLANAR NPN

LINEAR AND SWITCHING APPLICATIONS
The TIP47 to TIP50 are silicon mtltiepitaxial planar transistors in
intended for linear and switching applications.

tic package

ABSOLUTE MAXIMUM RATINGS

TIP49

TIP50

Collector base voltage (I E = 0)
Collector emitter voltage (I B '= 0
Emitter base voltage (lc = 0)
Collector current
Collector peak curren
Base current
Total power diss'
Total power
Storage t
Junct'

450V
350V
300V
5V
1A
2A
0.6A
40W
2W
-65 to 150°C
150°C

500V
400V

VCBO
VCEO

VEBO
Ic
ICM

IB
Ptot
Ptot
Tstg
Tj

INTER

MATIC DIAGRAM

MECHANICAL DATA

10/82

'4:

536

Dimensions in mm

THERMAL DATA
Rth j-case
Rth j-amb

max.
max.

Thermal resistance junction-case
Thermal resistance junction-ambient

3.125
62.5

0 C/W
°C/W

ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICES

Collector cutoff
current (V BE = 0)

for
for
for
for

TIP47
TIP48
TIP49
TIP50

VCE
VCE
VCE
VCE

= 350V
= 400V
= 450V
= 500V

1
1
1
1

rnA
rnA
rnA
rnA

I CEO

Collector cutoff
current (I B = 0)

for
for
for
for

TIP47
TIP48
TIP49
TIP50

VCE
VCE
VCE
VCE

= 150V
= 200V
= 250V
= 300V

1
1
1
1

rnA
rnA
rnA
rnA

lEBO

Emitter cutoff
current (lc = 0)

V EB

1

mA

VCEO(sus) Collector emitter

=

5V

Ic

=

30mA

for
for
for
for

Ic

=

lA

Is

sustaining voltage

VCE(sat) * Collector emitter

TIP47
TIP48
TIP49
TIP50

=

0.2A

250
300
350
400

V
V
V
V
1

V

I ·.t~l
4

saturation voltage

I
I ·. '.·.'

VBE(on) * Base emitter
on voltage

Ic

=

lA

VCE

=

10V

1.5

V

I:i'I'
537

'I
I~

ELECTRICAL CHARACTERISTICS (continued)
Parameter
hFE *

Min. Typ. Max. Unit

Test conditions

DC current gain

Ie
Ie

=
=

0.3A
1A

VeE
VeE

=
=

150

30
10

10V
10V

-

-

fT

Transition frequency

VeE = 10V
f = 2MHz

Ie

=

0.2A

10

MHz

h fe

Small signal
current gain

VeE = 10V
f = 1 KHz

Ie

=

0.2

25

-

* Pulsed: pulse duration = 300 IlS duty cycle';; 2%.

Safe operating areas

Ic

8

(A)G

IC MAX PULSED
ICMAX CONT.

i

,,\

r\

~

.. ~.-.....L
DC OPER TION

O.lms

10-1

O.5ms

8

~

-X

"\
'/1\
V

lms

-

TIP 50
TIP4!j
TIP48
T IP4?
6

10

8

VCE(V)

538

DC current gain

DC current gain
G - 4800

eF=- F--"

c---

fm

tt: --

~;t~f

f=

e--

tt -

f-H-

H-

it'

--

!

;11

I

~

.i
'
b jet

-f---

~-t ~"

T

_

".

'

- ~F+m '
'

-t +-----t--tttt

.....

t-n-P+

'

I

"

I

i

t

!\

!

10

!:.'

~

II
8

-2

'\.'\1 40'C
'\.)25'C

,

Ii

j

I

II

' \ 1jS'C
,

_,

10

10

b:

iii
'8

IC (A)

Collector-emitter saturation voltage
G

VCE(sat )
(V)

Collector-emitter saturation voltage

802

II I
hFE

0.6

I,

VCE(sa! )
(V)

=S I

,

G 4803

II
I

~

I
I

l.SA

0.4

125 'c
-40'C
25'C

'\
0.2

[)

\

\

\

\

\

~

~ ......

\

"
l-

IC -O.lA

o

1\

~
0.5

0.3A

o

-,

10

10

539

\

\
\
1A
O.5Alll

II

Base-emitter saturation voltage

Collector-base capacitance
G-l,B

VC:(sat )

i

(V)

I

I

hFE~ 5

I

1

-1
IN
f1

G 4805

(,

CCBO

8

1

(pF)

8

_,4
~

-...L

~-

Vl,..P

- 40'C
25'C

k.

I'

J

t-'li
!

I

l

.~

'l

I, I

'I

~tl
I

I---

I

i

I

11

-,
10

-2

10

IC(A)

Saturated switching characteristics
(inductive load)
G _80,
---~

I-----J

1---

-+-1---1

,~

VBC O
-

--,-

I
~----.

-----~

I--~

8

,
._-

1-------

I

te

rl

Cps)

•10

l-ffff

,---~~--

I

III
4

I

III

6'

4

10'

6.

VCB(V)

--t++-j
Ti

f----L-

I

I !

--t- -I-+-

II

1= I--,I-f--cc--.:' ___
,~----=-

l--

-.--

Ef;J.-

+

-5V

VBE~O

~............ ~

I--

~

!

1

i

f----

41-- .......... --.....::::

1 Vcl amp =300V _

~50mH

~~---

I,

I----~-

J-=?Y.

I-+-- i--

Til

Saturated switching characteristics
(inductive load)
0-4807

41-------

L
h fE =5

I

.......... i .

-1-1

1I

VCC~20V

\

I,

V

12:,:5

4e---

--t-,

t-1-r'
I~

,..........4

10

0.5

o

-

........

r-

=

-+-H Itt I

1---

i

VCC =20V
2 Vclamp= 300V 1--.

---~

L=50mH
hFE'5
I

10- 1

10- 1

540

~

2V

--

"""-..~

i-'"

V

.A
-5V.... ~l--

Saturated switching
(inductive load)

characteristics

Saturated switching
(resistive load)

G 4808

t~====~====T==+==~~~~

,~==t

(I's)

TT

--

,

-

~

~

f------ i----

.-

--

--

I

kT

I - S~-+Vee =20V

....... ~

2 Vclamp =300V

L=50mH
h FE=5

j---'-

--~
---.

-

VBe O
-2V

--i

+

~

-f.-'

--~

.....~

8

10- 1

Ie

(A)

Clampled reverse bias
safe operating areas
Ie
IA) ,_

10-'L---------L-~~L-_~~~~~

characteristics

____~

10'

541

MULTIEPITAXIAL MESA NPN

HIGH VOLTAGE POWER SWITCH
The TIP51, TIP52, TIP53, TIP54 are silicon multiepitaxial mesa NPi'J t
plastic p a c k a g e . ,
They are intended for high voltage, fast switching industrial and ~.

ABSOLUTE MAXIMUM RATINGS
V CES
V CEO

VESO
Ic
ICM

Is

Ptot
T stg

Tj

INTER

Collector-emitter voltage (V~
Collector-emitter voltage (I s
Emitter-base voltage (I C
Collector current
Collector peak c
Base current
Total p
Stora
Ju

• EMATIC

TlP53

TIP54

450V
350V
5V
3V
5A
0.6A
100W
-65 to 150°C
150°C

500V
400V

400V
300V

DlAG~~,

E

MECHANICAL DATA

10/82

Dimensions in mm

542

THERMAL DATA
R!h j-case

Thermal resistance junction-case

max.

1.25

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICES

Collector -cutoff
current (V BE = 0)

for
for
for
for

TIP51
TlP52
TlP53
TlP54

VCE
VCE
VCE
VCE

=
=
=
=

350V
400V
450V
500V

1
1
1
1

mA
mA
mA
mA

I CEO

Collector cutoff
current (I B = 0)

for
for
for
for

TIP51
TlP52
TIP53
TIP54

VCE
VCE
VCE
VCE

=
=
=
=

150V
200V
250V
300V

1
1
1
1

mA
mA
mA
mA

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 5V

1

mA

for
for
for
for

TIP51
TIP52
TlP53
TIP54

V
V
V
V

VCEo(susi Collector-emitter
sustaining voltage
(I B = 0)

Ic = 30mA

VCE(sa!) * Collector-emitter
saturation voltage

Ic = 3A

IB = 0.6A

1.5

V

V SE *

Base-emitter

Ic =3A

VCE = 10V

1.5

V

hFE *

DC current gain

Ic = 0.3A
Ic =3A

VCE = 10V
VCE = 10V

150

-

hfe

Small signal
current gain

Ic=0.2A; VCE=10V;f=lKHz
Ic=0.2A; VCE=10V;f=lMHz

543

250
300
350
400

30
10
30
2.5

-

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

Min. Typ. Max. Unit

ES/ b

Second breakdown
Un clamped energy

V BE = 20V
L = 30mH

RBE =100n

ton

Turn-on time

Ie = 1A
Vee = 200V

IBI = 100mA

toff

Turn-off time

Ie = 1A lSI = -IB2= 100mA
Vee = 200V

mJ

100

0.2

Ils

2

Ils

* Pulsed: pulse duration = 300 I1S, duty cycle = 1.5%

G- 4796

Safe operating areas

Ie
(A)

B
6
4

I

i

10

I

I

j

===i Ie MAX

---11eMAX eONT.
.

iii

i

PULSED

1=:::j

PULSE PERATION *
.-

'"\.

I

I

~~

I

iI

lO,us
100,us
lms
5ms
D.C-OPERATION -

I

*FOR SINGLE NON
;"
REPETITIVE PULSE ,-r--

II I I
I

10- 2

II II
6

8

10

544

'\

~

\

'\.i'

TIP
TIP
TIP
TIP

51
5253
54

I
I

EPITAXIAL-BASE NPN

POWER DARLINGTONS
The TIP 100, TIP 101 and TIP 102 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package,
intended for use in power linear and switching applications.
The complementary PNP types are the TIP 105, TIP 106 and TIP 107 respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO
VCEO
V ESO

Ic
ICM

Is
Ptot

TIP 100

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

60V
60V

TIP 101

TIP 102

80V
100V
80V
100V
5V
8A
15A
1A
80W
2W
-65 to 150°C
150°C

Dimensions in mm

MECHANICAL DATA
Collector connected to tab.

545

5/80

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

1.56
62.5

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICED

Collector cutoff
current (IB = 0)

for TIP 100
for TIP 101
for TIP 102

VCE = 30V
VCE = 40V
VCE = 50V

50
50
50

p.,A
p.,A
p.,A

ICBO

Collector cutoff
current (IE = 0)

for TIP 100
for TIP 101
for TIP 102

VCB = 60V
VCB = SOV
VCB = 100V

50
50
50

p.,A
p.,A
p.,A

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 5V

S

rnA

VCEO (sust Collector-emitter
sustaining voltage
(IB= 0)

Ic = 30mA
for TIP 100
for TIP 101
for TIP 102

VCE (sat) * Collector-emitter
saturation voltage

Ic = 3A
Ic = SA

18 = 6mA
18 = SOmA

2
2.5

V
V

VBE *

Base-emitter
voltage

Ic = SA

VCE = 4V

2.S

V

hFE *

DC current gain

Ic = 3A
Ic = SA

VCE = 4V
VCE = 4V

VF*

Forward voltage
of commutation
diode (18 = 0)

IF == -Ic = 10A

60
SO
100

* Pulsed: pulse duration = 300p.,s, duty cycle ",,2%.
546

1000
200

V
V
V

20000
2.S

V

EPITAXIAL·BASE PNP

POWER DARLINGTONS
The TIP 105, TIP 106 and TIP 107 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package
intended for use in power linear and switching applications.
The complementary NPN types are the TIP 100, TIP 101 and TIP 102 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO

Ic
ICM

IB
Ptot

TIP 105
-60V
-60V

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

TIP 106

TIP 107

-80V
-100V
-80V
-100V
-5V
-8A
-15A
-1A
80W
2W
-65 to 150°C
150°C

Dimensions in mm

MECHANICAL DATA
Collector connected to tab.

~.~.l.

.1Ji.
0.5

TO-220

547

5/80

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

1.56
62.5

°C/W
°C/W

25°C unless otherwise specified)

=

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (IB = 0)

for TIP 105
for TIP 106
for TIP 107

VCE = -30V
VCE = -40V
VCE = -50V

-50
-50
-50

/-LA
/-LA
/-LA

ICBo

Collector cutoff
cu rrent (IE = 0)

for TIP 105
for TIP 106
for TIP 107

VCB = -60V
VCB = -SOV
VCB = -100V

-50
-50
-50

/-LA
/-LA
/-LA

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -5V

-S

mA

,

VCEO (sus)*Coliectorcemitter
sustaining voltage
(lB = 0)

Ic = -30mA
for TIP 105
for TIP 106
for TIP 107

VCE (sat) * Collector-emitter
saturation voltage

Ic = -3A
Ic = -SA

IB = -6mA
IB = -SOmA

-2
-2.5

V
V

VBE (on) * Base-emitter
voltage

Ic = -SA

VCE = -4V

-2.S

V

hFE *

Ic = -3A
Ic = -SA

VCE = -4V
VCE = -4V

VF*

DC current gain
Forward voltage
of commutation
diode (lB = 0)

-60
-SO
-100

IF = -Ic = -10A

* Pu Ised: pu Ise duration = 300/-Ls, duty cycle

548

~

1000
200

V
V
V

20000

-

-2.S

2 %.

V

EPITAXIAL-BASE NPN

POWER DARLINGTONS
The TIP 110, TIP 111 and TIP 112 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in medium power linear and switching applications.
The complementary PNP types are the TIP 115, TIP 116 and TIP 117 respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO

V CEO
V ESO
Ic
leM
Is
Ptot
T stg

Tj

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::::25°C
Tamb :::::25°C
Storage temperature
Junction temperature

MECHANICAL DATA

TIP 110

TIP 111

TIP 112

60V
60V

80V
80V
5V
2A

100V
100V

4A

50mA
50W
2W
-65 to 150°C
150°C

Dimensions in mm

Collector connected to tab.

TO-220

549

5/80

THERMAL DATA
Rthj-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

2.S
62.S

°C/W
°C/W

= 2SoC unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (IB = 0)

for TIP 110
for TIP 111
for TIP 112

VCE = 30V
VCE = 40V
VCE = SOV

2
2
2

mA
mA
mA

ICBO

Collector cutoff
current (IE = 0)

for TIP 110
forTIP111
for TIP 112

V CB = 60V
V CB = SOV
V CB = 100V

1
1
1

mA
mA
mA

lEBO

Emitter cutoff
current (Ic = 0)

V EB = SV

2

mA

VCEO (Sus)*Coliector-emitter
sustaining voltage
(lB= 0)

Ic = 30mA
for TIP 110
for TIP 111
for TIP 112

VCE (sat) * Collector-emitter
saturation voltage

Ic = 2A

IB = SmA

2.S

V

VBE (on) * Base-emitter
voltage

Ic = 2A

VCE = 4V

2.S

V

hFE *

Ic = 1A
Ic = 2A

VCE = 4V
VCE = 4V

DC current gain

60
SO
100

* Pulsed: pulse duration = 300Il-S, duty cycle :0:::;2%.
550

1000
SOO

V
V
V

-

EPITAXIAL-BASE PNP

POWER DARLINGTONS
The TIP 115, TIP 116 and TIP 117 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in medium power linear and switching applications.
The complementary NPN types are the TIP 110, TIP 111 and TIP 112 respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO
VCEO

VEBO
Ic
ICM

Is
Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;25°C
Tamb :::;25°C
Storage temperature
Junction temperature

MECHANICAL DATA

TIP115

TIP116

TIP117

-60V
-60V

-80V
-80V
-5V
-2A

-100V
-100V

-4A
-50mA
50W
2W
-65 to 150°C
150°C

Dimensions in mm

Collector connected to tab.
10.4"""

TO..,220

551

5/80

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

=

max
max

2.5
62.5

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (Is = 0)

for TIP 115
for TIP 116
forTIP117

VCE = -30V
VCE = -40V
VCE = -50V

-2
-2
-2

mA
mA
mA

Icso

Collector cutoff
cu rrent (IE = 0)

forTIP115
for TIP 116
for TIP 117

Vcs = -60V
Vcs = -SOV
Vcs = -100V

-1
-1
-1

mA
mA
mA

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -5V

-2

mA

VCEO (Sus)*Collector-emitter
sustaining voltage
(Is = 0)

Ic = -30mA
for TIP 115
forTIP116
for TIP 117

VCE (sat) * Collector-emitter
saturation voltage

Ic = -2A

Is = -SmA

-2,5

V

VSE (on) * Base-emitter
voltage

Ic = -2A

VCE = -4V

-2.S

V

hFE *

Ic = -1A
Ic = -2A

VCE = -4V
VCE = -4V

DC current gain

* Pulsed: pulse duration = 300l1-s, duty cycle

552

-60
-SO
-100

~2%.

1000
500

V
V
V

-

-

EPITAXIAL-BASE NPN

POWER DARLINGTONS
The TIP 120, TIP 121 and TIP 122 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in power linear and switching applications.
The complementary PNP types are the TIP 125, TIP 126 and TIP 127 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
Ie
leM
IB
Ptot

TIP 120

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

60V
60V

TIP 121

TIP 122

80V
100V
80V
100V
5V
5A
8A
0.1A
65W
2W
-65 to 150°C
150°C

Dimensions in mm

MECHANICAL DATA
Col.leClor connected to tab.

TO-220

553

10/82

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

1.92
62.5

°C/W
°C/W

= 25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (IB = 0)

for TIP 120
for TIP 121
for TIP 122

V CE = 30V
VCE = 40V
VCE = 50V

0.5
0.5
0.5

mA
mA
mA

IcBo

Collector cutoff
current (IE = 0)

for TIP 120
for TIP 121
for TIP 122

VCB = 60V
VCB = 80V
VCB = 100V

0.2
0.2
0.2

mA
mA
mA

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 5V

2

mA

V CEO (sus) *Collector-emitter
sustaining voltage
(IB = 0)

Ic = 30mA
for TIP 120
for TIP 121
for TIP 122

VCE (sat) * Collecto r-em itter
saturation voltage

Ic = 3A
Ic = 5A

IB = 12mA
IB = 20mA

VBE (on) * Base-emitter
voltage

Ic = 3A

V CE = 3V

hFE *

Ic = 0.5A
Ic = 3A

V CE = 3V
VCE = 3V

DC current gain

60
80
100

* Pulsed: pulse duration = 300lts, duty cycle :::;2%.

554

1000
1000

V
V
V
2
4

V
V

2.5

V

-

G - 4750

Safe operating areas

IC
( A)

I I I

I

Iii

I

.

10

1

<

,

II II

*PUILSE

IC MAX (PULSED)f

1

O~~R~W~

=--~

~.

f---+
~_+

. ,

\1\

I C MAX (CONTINUOUS)'"
~

,i

I 1_1

Iii

I

=

' "'1\.\ \

*FOR SINGLE NON
REPETITIVE PULSE
-----+--------+I-~"

\

I

~-

100}Js
I
lms
I
10ms

I\.

__L111illH

10 t's

\\

i

'
I

I

--+--+"
I--

t

-r-----+--t

,
!

I
I---f-

I
--

!

TIP120TIP121
TIPl22

II

I

I

I
•

'
!

:

I
I

- 1

-----+-

I

I

I

I

ill i

10

:

I

10

DC current gain

10

2

DC current gain
G "7 S3

G-47S2

VCP 3V

,
10 8F==d~
,
,
,

:11

10

150'C

8

'1\

'~~

I

8

,

I

'I

,
8

', r
1

-1

,

,

,
,

10

,

125·C

8

10

++

VCE:3V

i

I

1- 55·Cr--.,

,b

,

"CE (V)

'8

MAX.

,

1

I

,
,

yp.

8

MIN.

,

1

1,1

I

I

I
-1

10

10

IC (A)

555

,

'8

,

,

8

10

1
IC (A)

Collector-emitter saturation voltage
G

Base-emitter voltage

"754

G

4755

VBE(on )

VCE[sat )
[V)

Tj

(V) •

2 •

VCE =3V
IC:

lA

2A

3A

4A

11

6A

2.6

\

----t- v

\

2.2

1\

1.8

\

1.4

I'..

0.6

10

10

Base--emitter saturation voltage

IC (A)

Collector-emitter saturation voltage
G

V BE(sat )

,,756

G 4757

VCE(s.at )
[V) 6

[V)

-

2

1

-

,

hFE =250

hFE =250

I

.

,

-,

-,

10

----

10

~ f-""j

--

i

--t- +-t

I

!

:

i

vI-'
,

I

-,

-,

10

10

556

I

,

-tt .

----

10

,

6

•

IC [A)

Collector base capacitance

Collector cutoff current

1.159

G

b
)

-

10

............ ..:.:
10

..... "

II

8

-2

10

I
- 0.4 -0.2

a

0.2

0.4

0.6

10

0.8

Satu rated switch ing characteristics

Vcc~ 30V
hFE~250

-

f-.-...-+------+---

lb1~lb2

------j.---.~--

557

-

EPITAXIAL-BASE PNP

POWER DARLINGTONS
The TIP 125, TIP 126 and TIP 127 are silicon epitaxial-base PNP transistors in
monolithic Darlington configuration in Jedec TO-220 plastic package, intended
for use in power linear and switching applications.
The complementary NPN types are the TIP 120, TIP 121 and TIP 122 respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO

VEBO
Ic
ICM

IB
Ptot

TIP 125

Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease :::;25°C
Tamb :::;25°C
Storage temperature
Junction temperature

MECHANICAL DATA

10/82

-60V
-60V

TIP 126

TIP 127

-80V
-100V
-80V
-100V
-5V
-5A
-8A
-0.1A
65W
2W
-65 to 150°C
150°C

Dimensions in mm

558

THERMAL DATA
Thermal resistance junction-case
Thermal resisfanqe junction-ambient

Rth j-ease
Rthj-amb

max
max

1.92
62.5

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cutoff
current (IB = 0)

for TIP 125 VCE
for TIP 126 . VCE
for TIP 127 VCE

= -30V
= -40V
= -50V

-0.5
-0.5
-0.5

mA
mA
mA

ICBO

Collector cutoff
current (IE = 0)

for TIP 125
for TIP 126
for TIP 127

= -60V
= -80V
= -100V

-0.2
-0.2
-0.2

mA
mA
mA

lEBO

Emitter cutoff
current (Ic = 0)

VEB

-2

mA

VCEO (sus)'Coliector-emitter
sustaining voltage
(lB =-0)

VCE (sat)
VSE (on)
hFE

,

,

,

VCB
VCB
VCB

= -5V

Ic = -30mA
for TIP 125
for TIP 126
for TIP 127

-60
-80
-100

= -12mA
= -20mA

Collector-emitter
saturation voltage

Ic
Ic

= -3A
= -5A

IB
IB

Base-emitter
voltage

Ic

= -3A

VCE

= -3V

DC current gain

Ic
Ic

= -0.5A
= -3A

VCE
VCE

= -3V
= -3V

'Pulsed: pulse duration = 300ILS, duty

cycle~

559

2 %.

1000
1000

V
V
V
-2
-4

V
V

-2.5

V

-

G

Safe operating areas

Ie
(A)

I

I
III *

i

III

I

~

770

--~-

I I I 111'1
PULSE OPERATION
1

~1-~I~e~M3A§X§I(P~UIL3S~E§D§):n;~-~f~-fffffjS-~1j-~--::---4-~
.
10 fJ 5j

10

~MAX (eONTINuO~t5'"

1\ 1\

I---_f--+----.: \

II11

I 11111
i--- -FOR

\

l~

DC OPERATION

1\

SINGLE NON PULSE

c-- REPETITIVE

,

"

OO!,s

\:\

ms

VCp2V

--

10'

t

r-

l~-

~N5190

I

L~!,S- -

IY

-

!

....
I'..

~

2N5191
2N519f

! !

i

pms

i

10-2

10

Ii

,

10

4

6

,

(A)

Base-emitter saturation voltage

Collector-emitter saturation voltage

-

G 2442

G-2731

VCE(sat),
(V)

'c

1

)

6

hFE=10

/:

10-1

hFpl0

/

/

I

1.5

",

./

0.5

I

6

,

-

..,.;.;;-

./

-""'"

, ,I
IC

IC(A)

609

(A)

Transition frequency

Collector-base capacitance
G 2424

G 2423

IT
(MHz )

-

ceBO,

-..

(pF)

VCE=IV

6

r'\.

10

'\.

t-

.........

10'

\.

'"

\

"

a

10

,

6

, 6'

,

10-1

Ie (A)

Saturated switching characteristics

,

10

Power rating chart

G 2422

11-2516

Ptot
(W)

,Vce=30V
IIB1=-IB2
hFE=10

40

30

Is

~
.......

'\
\..

I-r--.

f': r-....

I'\.

./

10

ton

'\
6

10-1

-

I,

20

r-....

~

'\.
~

6

,

50

Ie (A)

610

100

,

VeB (V)

,

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 5193, 2N 5194, 2N 5195 are silicon epitaxial-base PNP power transistors in Jedec
TO-126 plastic package, intended for use in medium power linear and switching
applications.
The complementary NPN types are the 2N 5190, 2N 5191, 2N 5192 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO

VEBO
Ic
ICM

IB
Ptot
Tstg
Tj

2N5193 2N5194 2N5195

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current (t ,s;; 10 ms)
Base current
Total power dissipation at Tease ,s;; 25°C
Storage temperature
Junction temperature

-40V
-40V

-60V
-BOV
-60V
-BOV
-5V
-4A
-7A
-1 A
40W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

Dimensions in mm

N

.,.

M
D

M

i

1.2
Q58

12

14.4

TO-126 (SOT -32)

(I) Within this region the cross~sectlon of thE' leads IS uncontrolled

611

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

3.12
100

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

Icso

Collector cutoff
current (IE = 0)

for 2N5193
for 2N5194
for 2N5195

Vcs= -40V
Vcs= -60V
Vcs = -80V

-100
-100
-100

[LA
[LA
[LA

ICEX

Collector cutoff
current (V ES = 1.5)

for 2N5193
for 2N5194
for 2N5195
Tease= 125°C
for 2N5193
for 2N5194
for 2N5195

VCE = -40V
VCE = -60V
VCE = -80V

-100
-100
-100

[LA
[LA
[LA

V CE = -40V
VCE = -60V
VCE = -80V

-2
-2
-2

mA
mA
mA

VCE = -40V
VCE = -60V
VCE = -80V

-1
-1
-1

mA
mA
mA

-1

mA

ICEO

Collector cutoff
current (Is = 0)

for 2N5193
for 2N5194
for 2N5195

IESO

Emitter cutoff
current (lc = 0)

V EB = -5V

VCEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic = -100mA
for 2N5193
for 2N5194
for 2N5195

VCE (sat)*

Collector-emitter
saturation voltage

Ic = -1.5A
Ic = -4A

Is
Is

VSE *

Base-emitter voltage

Ic = -1.5A

VCE = -2V

hFE *

DC current gain

Ic = -1.5A

VCE = -2V
for 2N5193
for 2N5194
for 2N5195
VCE = -2V
for 2N5193
for 2N5194
for 2N5195

ic = -4A

fT

Transition frequency

Ic = -1A

= -0.15A
= -1A

VCE = -10V

* Pulsed: pulse duration = 300 [Ls, duty cycle = 1.5%
612

-40
-60
-80

25
25
20
10
10
7
2

V
V
V
-0.6
-1.2

V
V

-1.2

V

100
100
80

-

MHz

Safe operating areas
-Ie

~

(A)

Ie

MAX (PULSED)

-2739

* PULSE

Ir MAX (CONTINUOUS) . '\.

DC current gain

1)Js- -

'\.
!16)Js- -

i'\i'\ i'\

I I II

G-2517

OPERATION

II II );: \

:~

DC OPERATION

I 1111111

VCE;-2V

\

-

I-

I

I

......

OO)Js

10'

-*FOR SINGLE NON
REPETITIVE PULSE

1"1ms

Ii
1 '

2N5193
2N5194
2N5195

B

Oms

!

,

10

10

,

10-1

,

8

(A)

Base-emitter saturation voltage

Collector-emitter saturation voltage
G- 24 3 8

G

-VCE(sat) B
(V)

B

-Ie

1

2751

t

B

,

hFE _10
1.5
hFE;10

,

./

10-1

/

/
./

I-/"
~

r-/'

1--1-

0.5

,./

o
10- 1

-Ie (A)

613

Transition frequency

Collector-base capacitance
-

'T

CCBO

(MHzl

(pFl,

IV~.=-lV

15

f'""

'\.

"

10

10'

" I'\.

o

.. ,

10

10-'

Saturated switching characteristics

.

"

•••

-vcs(Vl

10

Power rating chart

G-241 9

I

6-2516

Plot

~sl 8

.

(Wl

I

-

6

VCC=-JOV
IS1=-IS2

40

h F E=10
2

I\..

t\.

30

1-....
Is

" '1'0..
......

1'--

......

1\

20

........

,

I\.

t\.

I"

t---!!.

10

"1,\

Ion

50

614

100

150

Tcas~(·Cl

EPITAXIAL PLANAR NPN
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N 5336, 2N 5337, 2N 5338 and 2N 5339 are silicon epitaxial planar NPN transistors
in Jedec TO-39 metal case.
They are intended for high current switching applications up to 5A.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
V EBO
Ic
ICM

IB
Ptot

2N5336 2N5338
2N5337 2N5339

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tamb~25°C
Tcase~25'C

Storage temperature
Junction temperature

80V
80V

100V
100V

6V
5A
7A
1A
1W
6W
-65 to 200'C
200 'c

INTERNAL SCHEMATIC DIAGR~~:

MECHANICAL DATA

Dimensions in mm

Collector connected to case

TO-39

615

6/77

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

29.2
175

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
leso

ICEO

ICEX

Collector cutoff
current (IE = 0)

Collector cutoff
current (Is = 0)

Collector cutoff
current (VSE = -1.5 V)

Test conditions

Min. Typ. Max. Unit

for 2N5336 and 2N5337
Vcs = 80 V
for 2N5338 and 2N5339
Vcs= 100 V
for 2N5336 and 2N5337
VCE = 75V
for 2N5338 and 2N5339
VCE = 90 V
for 2N5336 and 2N5337
V CE = 75 V
VCE = 75 V
Tease = 150°C
for 2N5338 and 2N5339
VCE = 90 V
VCE = 90 V
Te~se = 150°C

10

f1A

10

f1A

100

f1A

100

f1A

10
1

mA

10
1

f1A
mA

f1A

VCEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic = 50 mA
for 2N5336 and 2N5337
for 2N5338 and 2N5339

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

=2A
= 5A

Is
Is

=0.2 A
= 0.5 A

0.7
1.2

V
V

VSE (sat) *

Base-emitter
saturation voltage

Ic
Ic

=2A
= 5A

Is
Is

= 0.2 A
= 0.5 A

1.2
1.8

V
V

hFE *

DC current gain

Ic
for
for
Ic
for
for
Ic
for
for

= 0.5 A
VCE = 2 V
2N5336 and 2N5338
2N5337 and 2N5339
= 2A
VCE = 2 V
2N5336 and 2N5338
2N5337 and 2N5339
= 5A
VCE = 2 V
2N5336 and 2N5338
2N5337 and 2N5339

616

80
100

V
V

-

30
60
30
60
20
40

120
240

-

ELECTRICAL CHARACTERISTICS (continued)
Parameter

Test conditions

fT

Transition frequency

Ie

Ceso

Collector-base
capacitance

Ves= 10V
IE
f
= 0.1 MHz

ton

Turn-on time

Ie =2A
IS1 = 0.2 A

ts

Storage time

4

Fall time

*

= 0.5A

Min. Typ. Max. Unit

VeE = 10 V

30

MHz

= 0

Vee= 40V

Vee= 40V
Ie =2A
IS1 = -ls2 = 0.2 A

250

pF

200

ns

2

fJS

200

ns

Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%

Safe operating areas

G~G92

Ie

8

(Al

6

riC MAli

" .....I",

""',

~

'"'"......
DC OPERATION
DISSIPATION LIMITED

""-1'\,
2N5336

2N15~3r

I
4

6

8

10

617

2N5338
2Nr3j

Collector-emitter saturation voltage

DC current gain

-

G 2689

~691

VCE(sa1
(V)

VCE=2V

h FE =10

0.6

120

i-"'"

"

~
80

./

'\.

0.4

~

IL
V

40

0.2

o

o
IC

/

IC(A)

(AI

Collector-base capacitance

Base-emitter saturation voltage

.....3

6-2690

IC

CCBO

(A)

h

(pF)

.10

4

,

1=IM

75

50

i'"25

o

o.s

o

1.5 VaE(saI) (V)

618

25

50

76

VCB(V)

Saturated switching characteristics

Power rating chart
-

G 2694

G-2G9S

I

Ptot

8

(~S),

h FE =10

~

(W)

Vee=40V
I p =1O I'S

....

~ .......

""

.......

t--..

4

t-...

"""F::

If

I'-..

i'-

Ion

,

.

.

/".

"
r-....

1'.

,

o

Ie (A)

50

Switching time test circuit

+37V-n
OV

~10/JS

INPUT PULSE

tr,tf~lOns

-3.3V

DUTY CYCLE= I·'.

5-22·70

619

100

150

Teas. (Oe)

EPITAXIAL PLANAR PNP
HIGH VOLTAGE TRANSISTORS
The 2N5415, 2N5416 are high voltage silicon epitaxial planar transistors designed for
use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEO
V EBO

Ic

IB
Ptot

2N5415 2N5416

Collector-base voltage (I E= 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c= 0)
Collector current
Base current
Total power dissipation at T case S25°C
T amb S50°C
Storage temperature
Junction temperature

-200V
-350V
-200V
-300V
-4V
-6V
-1A
-0.5A
10W
1W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGR~~:

MECHANICAL DATA

Dimensions in mm

CplleCt6r connected to case

1"0-39

5/80

620

THERMAL DATA
Thermal resistance junction-case
Thermal resistance junction-ambient

Rth j-case
Rth j-amb

max
max

17.S °C /W
1S0 °C /W

ELECTRICAL CHARACTERISTlCS(T case=2SoCunless otherwise specified)
Parameter

Test conditions

ICBO

Collector cutoff
current ( I E= 0)

for 2N5415
for 2N5416

I CEO

Collector cutoff
current ( I B= 0)

V CE=-1S0V

lEBO

Emitter cutoff
current ( I C= 0)

for 2N5415
for 2N5416

•

VCE (sat)

V BE

•

•

Unit

-SO
-SO

JlA
JlA

-SO

JlA

-20
-20

JlA
JlA

V c s=-17SV
V cs=-280V

V EB =-4V
V Es=-6V

Ic =-10mA
for 2N5415
for 2N5416

-200
-300

V
V

Collector-emitter
sustaining voltage
(RBE=sOn)

Ic =-SOmA
for2N5416

-350

V

Collector-emitter
saturation voltage

Ic =-SOmA I B =-SmA

-2.S

V

Base-emitter
voltage

Ic =-SOmA V CE=-10V

-1.5

V

V CEO (sus) ·Collector-emitter
sustaining voltage
(I B=O)
VCER

Min. Typ. Max.

621

ELECTRICAL CHARACTERISTICS (continued)
Parameter

hFE *

Min. Typ. Max.

Test conditions

DC current gain

Ic =-50mA V CE=-10V
for 2N5415
for 2N5416

150
120

30
30

hIe

Small signal
current gain

Ic =-5mA
f = 1 KHz

V CE=-10V

25

fT

Transition frequency

Ie =-10mA V eE=-10V
f =5MHz

15

CeBo

Collector-base
capacitance

IE =0
f = 1 MHz

Unit

-

-

MHz

25

V es=-10V

pF

,

* Pulsed: pulse duration = 300 !!S, duty cycle::; 2%

Safe operating areas

DC current gain
G 4026

-IC

8
6

(rnA)

4

PULSE OPERATION- [ - .

6 IC MAX CONT
4

~

2

:f==

~

/

I

2

~.

/
/

lOps
SOps
100ps
SOOps
Sms

100

/

I

DC OPERATION--"

"
10

12S'C
2S'C
-SS'C

Vep-l0V

_.

2

10 2

G 4027

\

~~~M~Nu~~~

I

50

\ \

"'\

II

j

-

I

T"t

8
6
4

\

2N541S'~

2

2N54162

4

68

1

10

4

f-2

6 8

00"

6

8

4

10'3

10 2

622

6 8

4

10. 2

6 8

4

10

-I

- IC

6 8

(A)

Collector-emitter saturation voltage

Base-emitter voltage
G 4029

G 4028

I

I

-VCE(sat )

hFE ~ 10

(V)

f----f - - ---

[~
125·C~

0.75

I

25·C
-55·C-~

----

0.5

1I

05

1/11

i

V

c;:::::::

1/

l-

./

--

1/

.....

......

c:,..;:;1-

I

R
-55·C

I-- 25·C
125·C

0.25

77
VCE~-10V

,

6 8

10. 3

4

6

10- 2

8

4

10-1

-Ic

6 8

,

,

68

6 8

lQ-l

(A)

Transition frequency

10- 1

,

68

-IC

(A)

Switching times
G 4030

G 4031

,

fT

VCC~-150V

(MHz)

~

hFE ~10

75

"\.

~

/

8

\

6

,

50

VCE~-lOV

2

Tcase =25"C

25

If

"""

~n

I--- I---

"'"1"

........

1--.

,...

Is

--

t-

10-1
8

6
6

8

6

10-2

f------

1\
\

7

161 ~-162
2

2

2

8

10- 1

-IC

10

(A)

623

102

-IC

!rnA)

MULTIEPITAXIAL PLANAR NPN

HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N 5671 and 2N 5672 are silicon multiepitaxial planar NPN transistors in Jedec TO-3
metal case.
They are especially intended for high current, fast switching industrial applications.

ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = -1.5 V, RBE = 50 Q)
Qollector-emitter voltage (R BE :::; 50 Q)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ie = 0)
Colle~tor current
Base current
Total power dissipation at Tease":; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

2N5672

120V
120V
110V
90V

150V
150V
140V
120V

7V
30A
10A
140W
-65 to 200°C
200 °0

DIAGR~~:

MECHANICAL DATA

6/77

2N5671

Dimensions in mm

624

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1.25

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)

IcEV

Collector cutoff
current (VBE = -1.5 V)

Min. Typ. Max. Unit

Test conditions

Parameter

for 2N5671
for 2N5672
VCE = 100V

VCE = 110 V
V CE = 135 V
Tease = 150'C
for 2N5671
for 2N5672

ICEO

Collector cutoff
current (IB = 0)

VCE = 80 V

lEBO

Emitter cutoff
current (Ic = 0)

V EB

=

7V

VCEX (sust Collector-emitter
sustaining voltage
(VBE = -1.5V.
RBE = 50n)

Ic

=

200 rnA

VCER (sus) * Collector-emitter
sustaining voltage
(RBE = 50 n)

Ic

VCEO (sust Collector-emitter
sustainihg voltage
(I B= 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ie

=

15 A

IB

=

1.2 A

VBE(Sat) *

Base-emitter
saturation voltage

Ic

=

15 A

IB

=

1.2 A

V BE *

Base-emitter voltage

Ic

=

15 A

V CE = 5 V

hFE *

DC current gain

Ic
Ic

=
=

15 A
20 A

V CE = 2 V
VeE = 5 V

20
20

fT

Transition frequency

Ic

=

2A

V CE = 10 V

50

=
=

12
10

mA
mA

15
10

mA
mA

10

mA

10

mA

for 2N5671
for 2N5672

120
150

V
V

for 2N5671
for 2N5672

110
140

V
V

for 2N5671
for 2N5672

90
120

V
V

200mA

200mA

625

'"

0.75

V

1.5

V

1.6

V

100

-

MHz

ELECTRICAL CHARACTERISTICS (continued)
Parameter

= 0
= 1 MHz

Ccso

Collector-base
capacitance

ton

Turn-on time

ts

Storage time

tf

Fall time

Is/b**

Second breakdown
collector current

V CE = 24 V
V CE = 45 V

Es/b

Second breakdown
energy

V SE = -4 V,
L = 180 fLH

IE
f

Vcs= 10 V

Vcc= 30 V
Ic = 15 A
IS1 = -ls2 = 1.2A

* Pulsed: pulse duration = 300 fLs, duty cycle

**

(AJ

pF

0.5

J.1s

1.5

fLs

0.5

fLs

5.8
0.9

A
A

20

mJ

R SE = 20Q
1.5%

DC transconductance
G--l63 4/1

G-2640

Ie

8

~

(A)

6

I

=3V

PULSE OPERATION*

MAX

r-.,
~~PERATION ~ t\.
1

10

900

Pulsed: 1 s, non repetitive pulse

Safe operating areas
Ie

Min. Typ. Max. Unit

Test conditions

"

50,us
~-

30

500,u

11

3 s
20

*FOR SINGLE NON
REPETITIVE PULSE
10

L-

2N56'12

I II

III

2N5~71
4

68

4

10

68

o

10'

626

0.5

1.5

VBE (V)

Collector-emitter saturation voltage

DC current gain

(3..2641

G 2635

veE (sat ) - , -

I

(V)

hH =10
Vc:E =3V

10'

1.5

-

f--

I--

\

11

0.5

I
I

I

10

lO-z

10

le(A)

10

Base-emitter saturation voltage

Saturated switching characteristics
G 2636

G 2642

t

J

t

(1"5)

h FE =10

c---

V

1.2

V
0.8

I

r-- ~ I-t-

~

~ ton
~tf

r-0.4

. Vee=30V
hFE=10
I B1 =-I B2

--

10- 2

o
10

Ie (A)

10

[e (A)

627

.....
./

EPITAXIAL PLANAR PNP

PNP SILICON TRANSISTORS
The 2N5679 and 2N5680 are silicon epitaxial planar PNP transistors in Jedec
TO-39 metal case intended for use as drivers for high power transistors in general
purpose, amplifier and switching circuit.
The complementary NPN types are the 2N5681 and 2N5682 respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO
V CEO

V EBO
Ic
Is

Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = OJ
Emitter-base voltage (Ic = 0)
Collector current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

2N5679

2N5680

-100V
-100V

-120V
-120V

-4V
-1A
-0.5A
10W
1W
-65 to 200°C
200°C

DIAGR:~:

MECHANICAL DATA

Dimensions in mm

. CQllectarcannf;lcted toca~e

TO.,.39

5/80

628

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

ELECTRICAL CHARACTERISTICS (Tease
Parameter

=

max
max

17.5
175

°C/W
°C/W

25°C unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

IcBo

Collector cutoff
current (IE = 0)

for 2N5679
for 2N5680

V CB = -100V
V CB = -120V

-1
-1

/LA
/LA

ICEV

Collector cutoff
current
(VBE = 1.5)

for 2N5679
for 2N5680
Tease = 150°C
for 2N5679
for 2N5680

VCE = -100V
VCE = -120V

-1
-1

/LA
/LA

VCE = -100V
VCE = -120V

-1
-1

mA
mA

VCE = -70V
VCE = -80V

-10
-10

/LA
/LA

-1

/LA

ICEO

Collector cutoff
current (IB = 0)

for 2N5679
for 2N5680

lEBO

Emitter cutoff
current (Ic = 0)

V EB = -4V

V CEO (sus) * Co Ilector-em itter
sustaining voltage
(IB = 0)

Ic = -10mA
for 2N5679
for 2N5680

VCE (sat) * Collector-emitter
saturation voltage

Ic = -250mA IB = -25mA
Ic = -500mA IB = -50mA
Ic = -1A
IB = -200mA

V BE *

Base-emitter
voltage

Ic = -250mA VCE = -2V

hFE *

DC current gain

Ic = -250mA VCE = -2V
Ic = -1A
VCE = -2V

40
5

fT

Transition
frequency

Ic = - 1OOmA V CE = - 1OV
f = 10MHz

30

CCBO

Collector-base
capacitance

IE = 0
f = 1 MHz

V CB = -20V

hIe

Small signal
current gain

Ic = -0.2A
f = 1KHz

VCE = -1.5V

-100
-120

* Pulsed: pulse duration = 300/Ls, duty cycle ~2%.

629

V
V
-0.6
-1
-2

V
V
V

-1

V

150

MHz
50

40

-

pF

-

EPITAXIAL PLANAR NPN

GENERAL PURPOSE TRANSISTORS
The 2N5681 and 2N5682 are silicon epitaxial planar NPN transistors in Jedec
TO-39 metal case intended for use as drivers for high power transistors in general
purpose amplifier and switching circuits.
The complementary PNP types are the 2N5679 and 2N5680 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO

VEBO
Ic

IB
Ptot

Collector-base voltage (IE = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (Ic = 0)
Collector current
Base current
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

2N5681

2N5682

100V
100V

120V
120V

4V
1A
0.5A
10W
1W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DlAGR~:':

MECHANICAL DATA

5/80

Dimensions in mm

630

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

17.5
175

°C/W
°C/W

= 25°C

unless otherwise specified)

Test conditions

Min. Typ. Max. Unit

ELECTRICAL CHARACTERISTICS (Tease
Parameter

max
max

IC60

Collector cutoff
cu rrent (IE = 0)

for 2N5681
for 2N5682

VC6
VC6

= 100V
= 120V

1
1

/-LA
/-LA

ICEV

Collector cutoff
current
(VSE = -1.5V)

for 2N5681
VCE
for 2N5682
VCE
Tease = 150°C
for 2N5681
VCE
for 2N5682
VCE

= 100V
= 120V

1
1

/-LA
/-LA

= 100V
= 120V

1
1

mA
mA

= 70V
= 80V

10
10

/-LA
/-LA

1

/-LA

ICEO

Collector cutoff
current (16 = 0)

for 2N5681
for 2N5682

IE60

Emitter cutoff
current (Ic = 0)

V E6

VCE
VCE

= 4V

V CEO (sus)*Collector-emitter
sustaining voltage
(16 = 0)

Ic = 10mA
for 2N5681
for 2N5682

VCE (sat) * Collector-emitter
saturation voltage

Ic
Ic
Ic

= 250mA
= 500mA
= 1A

16
16
16

V 6E *

Base-emitter
voltage

Ic

= 250mA

VCE

= 2V

hFE *

DC current gain

Ic
Ic

= 250mA
= 1A

VCE
VCE

= 2V
= 2V

40
5

fT

Transition
frequency

Ic = 100mA
f = 10MHz

VCE

= 10V

30

CC60

Collector-base
capacitance

IE = 0
f = 1MHz

VC6

= 20V

hIe

Small signal
current gain

Ic = 0.2A
f = 1 KHz

VCE

= 1.5V

* Pulsed: pulse duration

=

100
120

= 25mA
= 50mA
= 200mA

300/-Ls, duty cycle~2%.

631

V
V
0.6
1
2

V
V
V

1

V

150

MHz

50

40

-

pF

-

EPITAXIAl·BASE PNP
SILICON HIGH POWER TRANSISTORS
The 2N 5875 and 2N 5876 are silicon epitaxial-base PNP power transistors in Jedec TO-3
metal case. They are intended for use in power linear and switching applications.
The complementary NPN types are the 2N 5877 and 2N 5878 respectively.

ABSOLUTE MAXIMUM RATINGS
VC80
V CEO
V E80

Ic
ICM

18
Ptot
Tstg
Tj

2N5875 2N5876

Collector-base voltage (IE = 0)
Collector-emitter voltage (18 = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease';;; 25°C
Storage temperature
Junction temperature

-60V
-60V

-80V
-80V

-5V
-10A
-20A
-4A
150W
-65 to 200°C
20QoC

INTERNAL SCHEMATIC DIAGR~~'

E

MECHANICAL DATA

6/77

Dimensions in mm

632

I

t'l

THERMAL DATA
Rth j-case

Thermal resistance junction-case

max

1.17

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
IcBO

Min_ Typ_ Max_ Unit

Test conditions

Collector cutoff
current (IE = 0)

for 2N5875
for 2N5876

V CB = -60V
V CB = -80V

ICEO

Collector cutoff
current (IB = 0)

for 2N5875
for 2N5876

V CE = -30V
V CE = -40V

IcEX

Collector cutoff
current (VBE = 1.5 V)

for 2N5875
V CE =
for 2N5876
V CE =
Tcase= 150 °C
for 2N5875
V CE =
for 2N5876
V CE =

lEBO

Emitter cutoff
current (Ic = 0)

,.

.'

-0.5
-0.5

mA
mAo

-1
-1

mA
mA

-60V
-80V

-0.5
-0.5

mA
mA

-60V
-80V

-5
-5

mA
mA

-1

mA

V EB = -5 V
= -200 mA
for 2N5875
for 2N5876

V CEO (sust Collector-emitter
sustaining voltage
(\B = 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

= -5 A
= -10A

IB
IB

= -0.5A
= -2.5A

-1
-3

V
V

VBE(sat) *

Base-emitter
saturation voltage

Ic

= -10A

Ic

= -2.5A

-2.5

V

VBE*

Base-emitter voltage

Ic

= -4A

V CE = -4V

-1.5

V

633

-60
-80

V
V

ELECTRICAL CHARACTERISTICS (continued)
Parameter
hFE *

DC current gain

fT
C eso
t,

Test conditions

Min. Typ. Max. Unit

Ic
Ic

= -4A
= -10A

V CE = -4V
V CE = -4V

20
4

Transition frequency

Ic

= -O,5A

V CE = -1 OV

4

Collector-base
capacitance

Ves= -10V
= 1 MHz
f

Rise time

Ie = -4A
IS1 = -OAA

ts

Storage time

tj

Fall time

IE

100

-

MHz

= 0

500

pF

0,7

fls

1

fls

0,8

fls

Vee= -30V

Vee= -30V
Ie = -4A
IS1 = -ls2 = -O,4A

* Pulsed: pulse duration = 300 fls, duty cycle = 1,5%

Safe operating areas

G-2721

-Ie
(A)
*I-'Ul::'t. ~I-'

Ie MAX PULSED
Ie

10
-

M~X

,~A

......

leolN+IJuous "

...... ~,

,

DC OPERATION

I

I II

I II

* REPETITIVE
FOR SINGLE NON
PULSE

i

10}Js100}ls
!

\

\

'I'

1ms

10ms2N5875
2N5816

10

634

-

~

DC transconductance

DC current gain
G-2729

(3-2130

-VSE
(V)

1.5

r-

10'

-VCp4V

1-0..

4

"

-VCE=4V

10
0.5

4

6.

4

4 6 •

10-'

10-'

6 8

1

o

2

Base-emitter saturation voltage
G-2732

G-2731

-VSECsat)

-VCE(sat)
6

(V)·

I
hFF=10

1.5

.~/

-IC(A)

10

Collector-emitter saturation voltage

(V)

4

10-IC(A)

....... "'"

hFE =10

0.5
i;"

V
4

6

,

1

•10

4

,

o

•

4

,,

2

4

6.

2

10

-IC (A)

635

4

,
-IC (A)

Collector-base capacitance

Saturated switching characteristics
G 2'16

G-271

cceo

I

(pF)

(,.,s)

hFE=lO
VCC=-30V
IB1=-IB:

- -•
·,
Is

400

~

~I

.....

300

r-.

-

200

Ion

.........
,

100

o

,

..

.

-Vce (V)

10

G-2m

PIOI
(W)

"

I......

.....

100

"50

I"-

l.....

"'
t-...

1'-.

50

100

150

,

-IC(A)

Power rating chart

o

·,
,

500

150

•

Tease ('C)

636

EPITAXIAL·BASE NPN
SILICON HIGH POWER TRANSISTORS
The 2N 5877 and 2N 5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3
metal case. They are intended for use in power linear and switching applications.
The complementary PNP types are the 2N 5875 and 2N 5876 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
V EBO

Ic
ICM

18
P tot
Tst9

Tj

2N5877 2N5878

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease"; 25°C
Storage temperature
Junction temperature

60V
60V

80V
80V

5V
10A
20A
4A
150W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGR:~:

Dimensions in mm

MECHANICAL DATA
Collector connected to case

TO-3

637

6/77

THERMAL DATA
Rlh j-case

max

Thermal resistance junction-case

ELECTRICAL CHARACTERISTICS
Parameter

1.17

°C/W

(Tease = 2SoC unless otherwise specified)

Test

con~iti~ns _..

Min.dTyp_ Max. Unit

Icsc5

Collector cutoff
current (IE = 0)

for 2N5877
for 2N5878

Vcs= 60V
Vcs= 80V

O.S
O.S

mA
rnA

IcEO

Collector cutoff
current (Is = 0)

for 2N5877
for 2N5878

V CE = 30V
V CE = 40V

1
1

rnA
mA

IcEX

Collector cutoff
current (V SE = -1.S V)

for 2N5877
V CE =
for 2N5878
V CE =
Tease = 1 SO °C
for 2N5877
V CE =
for 2N5878
V CE =

60V
80V

O.S
O.S

mA
mA

60V
80V

S
S

mA
rnA

1

mA

IESO

Emitter cutoff
current (lc = 0)

V ES = S V

= 200 mA

V CEO (sust Collector-emitter
sustaining voltage
(Is = 0)

Ic

VCE (sal) *

Collector emitter
saturation voltage

Ic
Ic

=SA
= 10A

Is
Is

= O.SA
= 2.SA

1
3

V
V

V SE (Sal)*

Base-emitter
saturation voltage

Ic

= 10A

Ic

= 2.SA

2.S

V

V SE *

Base-emitter voltage

Ic

= 4A

V CE = 4V

1.S

V

for 2N5877
for 2N5878

638

60
80

V
V

ELECTRICAL CHARACTERISTICS (continued)
Min. Typ. Max. Unit

Test conditions

Parameter
hFE *

DC current gain

Ic
Ic

=
=

4A
10A

V CE = 4V
V CE = 4V

20
4

fT

Transition frequency

Ic

=

0.5A

VCE = 10V

4

Ccso

Collector-base
capacitance

Vcs = 10V
f
= 1 MHz

Rise time

Ic
IS1

tr
ts

Storage time

tf

Fall time

* Pulsed: pulse duration

Safe operating areas

=
=

4A
O.4A

MHz

= 0

IE

-

100

300

pF

0.7

fLs

1

fLs

0.8

fLs

Vcc= 30V

Vcc= 30V
Ic = 4A
IS1 = -ls2 = O.4A
= 300 fLs, duty cycle = 1.5%

-

G 2120

Ie
(Al

Ie
10

Ie

*PUI 5E"

MAX PULSED

M~X

~
COUIJUOUS " " "
_.--

r-------- DC

'-

OPERATION/"

III

III
SINGLE NON
* FOR
REPETITIVE PULSE

yP

:~A

"- '-

10}Js 100}JS
--

"

-

"\'
\\

1ms

10ms- '--2N5877
2N58i8

10

639

DC current gain

DC transconductance

-

G 2733

hFE

10 3

G-273l.

VSE
(V)

Vr.

8

=4V

1.5

--~

10'

VCE
10

.......

=ltV

I-0.5

4

4

6.

6 8

4

4

6.

10- 1

10-'

;

.

B

10- 1

10IC(Al

Collector-emitter saturation voltage

10

6

•

Ie (A)

Base-emitter saturation voltage
G- 735

G-2736

VBE(sat )

VCE(sat )
(V)

4

;

+hFE

(V)

hFE= 10

=10

1.5

i

.

I

10-1

/'

,

1/

f-0.5

~

I

o

10-'
4

10-1

6

4

•

1

;.

10

4

6'

,

B

10

Ie (A)

640

6 B

Ie (A)

Saturated switching characteristics

Collector-base capacitance
G 2122

I

cceo

1..... 5)

(pF)

-

,
hFE=10

500

r-- ..!!.

400

~ If
300

I'-....

, ,

,

,

, ,

.

......

,

, ,
Vee

10

.

10-1

(V)

Power rating chart
G- 717

Plot
(W)

i"

.......

""
100

I'..

"

I'.

50

I.......

""

'" ~
o

.-

n

100

150

-

........

200

o

Vee=3OV
181=-1

50

100

641

.,

, ,
le(A)

MULTIEPITAXIAL PLANAR NPN
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS
The 2N 6032 and 2N 6033 are silicon multiepitaxial planar NPN transistors in modified
Jedec TO-3 metal case.
They have high current, high power handling capability, fast switching speed and are
intended for use in switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEX
VCER
V CEO

V EBO

Ic

'PBtot
Tstg
Tj

2N6032 2N6033

Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -1.5 V, RBE = 500)
Collector-emitter voltage (RBE = 50 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ie = 0)
Collector current
Base current
Total power dissipation at T case';;;; 25 DC
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

150V
150V
140V
120V

7V

7,V

50A

40A

lOA
140W
-65 to 200 DC
200 DC

DIAGR~~:

MECHANICAL DATA

6/77

120V
120V
110V
90

Dimensions in mm

642

THERMAL DATA
Rth I-case

max

Thermal resistance junction-case

1.25

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)
Parameter
IcEV

Collector cutoff
current (VBE = -1.5 V)

Test conditions
for 2N6032
VCE = 110V
VCE = 100V
for 2N6033
V CE = 135V
V CE = 100V

Min. Typ. Max. Unit

Tease = 150'C

12
15

mA
mA

Tease = 150'C

10
10

mA
mA

IcEO

Collector cutoff
current (I B = 0)

V CE = 80 V

10

mA

lEBO

Emitter cutoff
current (lc = 0)

V EB = 7V

10

mA

V CEX (sus) * Collector-emitter
sustaining voltage
(VBE = -1.5V,
R BE = 50S1, L=2mH)

Ic = 200 mA
for 2N6032
for 2N6033

120
150

V
V

V CER (SUS)* Collector-emitter
sustaining voltage

Ic = 200mA
for 2N6032
for 2N6033

110
140

V
V

Ic = 200mA
for 2N6032
for 2N6033

90
120

V
V

(R SE =50S1, L= 15mH)
V CEO (SUS)* Collector-emitter
sustaining voltage
(lB = 0)
V CE (sat) *

VBE (sat) *

Collector-emitter
saturation voltage

Base-emitter
saturation voltage

for
Ic
for
Ic

2N6032
= 50 A
2N6033
= 40 A

IB

= 5A

1.3

V

IB

= 4A

1

V

for
Ic
for
Ic

2N6032
= 50 A
2N6033
= 40 A

IB

=5A

2

V

IB

=4A

2

V

643

ELECTRICAL CHARACTERISTICS (continued)
Parameter
V BE *

hFE*

Base-emitter voltage

DC current gain

Min. Typ. Max. Unit

Test conditions
for
Ic
for
Ic

2N6032
= 50A
2N6033
= 40 A

for
Ic
for
Ic

2N6032
= 50 A
2N6033
= 40A

V CE = 2 V

2

V

V CE = 2 V

2

V

V CE = 2.6 V

10

50

-

V CE = 2 V

10

50

-

Small-signall
current gain

Ic
f

=2A
= 5 MHz

V CE = 10 V

CCBO

Collector-base
capacitance

IE
f

= 0
= 1 MHz

V CB = 10 V

tr

Rise time

ts

Storage time

tf

Fall time

for
Ic
IB1
for
Ic
IS1

ISlb**

Second breakdown
collector current

V CE = 24 V
V CE = 40 V

ES/b

Second breakdown
energy

V BE = -4 V,
L = 310 f1H

h fe

*
**

2N6032
= 50A
Vcc= 30 V
= -ls2 = 5A
2N6033
= 40A
Vcc= 30 V
= -IB2 = 4A

R sE = 5

Pulsed: pulse duration = 300 f1s, duty cycle = 1.5%
Pulsed: 1 s non repetitive pulse

644

-

10
800

pF

1

f1s

1.5

f1s

0.5

f1s

5.8
0.9

A
A

62

mJ

n

DC current gain

Safe operating areas

G 2698

G 2696

IC ,
(A)

6

f=i::::j

_PULSE OPERATION

10ms
3m.
1m. ~
500l's

10

30~

P(

10 1"

r--tttt

IC

~~~O~~NT

v

~ MAX
CON
2N6033

~ 1\

r-...

VCE=SV

"-'\.

80

60
DC

\

OPERATION

IV

IIIIIIII
- FOR SINGLE NON
REPETITIVE PULSE

40

1\

\

20

,

2N60322N6033

, 6'
10

10'

,

o

, 6'
VCE

,

6

,

,

10-1

(V)

,

6

,

,

10

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 2701

G 2697

VCE(sat )

VCE(sat),
(V)

IC (A)

I

(V)

6

1.6

hFE=10

I
1.2
IC =40A

,/

,

10- 1

/

0.8

30A

20A

0.4

"""!:..
"SA

6

10

IC

,

o

(A)

645

I
16 (A)

Base-emitter saturation voltage

G-' 699

VBE(sal)
(V)

Go 2702

eeBO
(pF)

hFE =10

11

I_I

0.9

V

0.8
0.7

Collector-base capacitance

.......

1000

800

1/

7

\
r\.

t'-...

600

'"

-r-.- r-

400

-

200

0.6
0.5

6

•

10

,

8

'e

(A)

o

16

12

20 VeB (V)

Power rating chart

Saturated switching characteristics

-

G 2703

I
(I's)

G 2700

PIOI
(W)

Vee =3DV
'BI =-'82
hFE=IO

140

1.5

120

l"-

I"1'\

I"

100
5

80

I"

1'\

1'\

60

l'

0.5

I"

I"

40

I~
I.-

W-

20

If

o

10

20

l"I"

I"

1'\
1'\

30

40

'e (A)

o

646

50

100

150 Tease rC)

EPITAXIAL-BASE PNP
MEDIUM POWER DARLINGTONS
The 2N 6034, 2N 6035 and 2N 6036 are silicon epitaxial-base PNP power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linear and switching applications.
The complementary NPN types are the 2N 6037, 2N 6038 and 2N 6039 respectively.

ABSOLUTE MAXIMUM RATINGS
VC60
VCEO
EBO

V
Ic

ICM

16

Ptot
Tstg
Tj

2N6034 2N6035 2N6036
-40V
-40V

Collector-base voltage (IE = 0)
Collector-emitter voltage (16 = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature

-60V
-80V
-60V
-80V
-5V
-4A
-8A
-100mA
40W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c
,-------1

I
I
I

I
B

I

I

I

I

R1

R2

I

L_, ______ ,~

R1Typ.lOkn
R21yp.150n

MECHANICAL DATA

Dimensions in mm

1.2

1.2

Q58

TO-126 (SOT -32)

(1) Within this region the cross-section of the leads is uncontrolled

647

6/77

THERMAL DATA
Rth j-ease
Rthj-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

3.12
S3.3

·C/W
·C/W

ELECTRICAL CHARACTERISTICS (Tease = 25·C unless otherwise specified)
Parameter

Min. Typ. Max. Unit

Test conditions

ICBO

Collector cutoff
current (IE = 0)

for 2N6034
for 2N6035
for 2N6036

VCB = -40V
V CB = -60V
V CB = -SOV

-500
-500
-500

ftA
ftA
ftA

ICEO

Collector cutoff
current (lB = 0)

for 2N6034
for 2N6035
for 2N6036

V CE = -20V
V CE = -30V
V CE = -40V

-500
-500
-500

ftA
ftA

-40V
-60V
-SOV

-0.5
-0.5
-0.5

mA
mA
mA

-40V
-60V
-SOV

-2
2
-2

mA
mA
mA

-2

mA

IcEX

lEBO

Collector cutoff
current (V EB = -1.5V)

Emitter cutoff
current (lc = 0)

for 2N6034
V CE =
for 2N6035
V CE =
for 2N6036
V CE =
Tease = 125 ·C
for 2N6034
V CE =
for 2N6035
VCE =
for 2N6036
V CE =
V EB = -5V

V CEO (sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

= -2A
= -4A

IB
IB

V BE *

Base-emitter voltage

Ic

= -2A

VCE = -3V

hFE *

DC current gain

Ic
Ic
Ic

= -0.5A
= -2A
= -4A

VCE = -3V
VCE = -3V
V CE = -3V

= -0.75
= 1 MHz

VCE = -10V

= -100mA

for 2N6034
for 2N6035
for 2N6036

hIe

Small signal current
gain

Ic
f

CCBO

Collector-base
capacitance

V CB = -10V
f
= 1 MHz

*

Pulsed: pulse duration

=

A

300 !-Is, duty cycle
648

=

-40
-60
-SO

= -SmA
= -40mA

500
750
100

V
V
V
-2
-3

V
V

-2.S

V

-

15000

-

1

IE = 0
1.5%

-

200

pF

Safe operating areas

-

G Z760

-IC

I

(A)

.~U~S~

I
I=Ic MAX PULSED

10

e-I c

OPERATIC N

~AXI C6JTII~UOUS
I

DC OPERATION

1\

'~
"

1\

,

\ \

\

100}'s

1\~

f-* FOR SINGLE NON
I-- REPETITIVE PULSE

lms- I--

2N6034 - f-e
2N6035

III

~

IjJ ,-

I--

11r

s

2N60~6

10

DC current gain

10}'s- ~

102 -VCE (V)

DC transconductance
G-2751.

G 2741

-Ie

•
,

(A)

,

v

,
/

V

VCE~-3V

1'-..

1\
veE~-3V

rl

10'

l..I

, ,
-Ie

(A)

0.5

649

1.5

-VBE (V)

Collector-emitter saturation voltage

Collector-emitter saturation voltage

-VCE(sat) ..---.--,-,-,-...,....,rrT-r---r_..-T""""1,...,liG-~2~"'"

6-2750

-VCECsat )

(v)

(V)

1.5

"

I =3A

21
IA
o.5A

0.5

o
o

Small signal current gain

-18 (mA)

Saturated switching characteristics

,-""

G 2624

•,

t
().Is)

4

K

2

10'

1\

••

VCC=-30V
hFE·250
181=-182

4

2

10'

If

••

•

4

VeE =-IOV
Ie =-0.7 SA

2

10

1\

••

on

~

"'-

4

2

46S'

10·'

4 II B

10·'

2

468

2

•

468

-lelA)

'(MHz)

650

EPITAXIAL·BASE NPN
MEDIUM POWER DARLINGTONS
The 2N 6037, 2N 6038 and 2N 6039 are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linear and switching applications.
The complementary PNP types are the 2N 6034, 2N 6035 and 2N 6036 respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO
VCEO

V EBO

Ic
ICM

IB
Ptot
Tstg

Tj

2N6037 2N6038 2N6039

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease";: 25°C
Storage temperature
Junction temperature

40V
40V

60V
80V
60V
80V
5V
4A
8A
100mA
40W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGRAM
c
,~~-----l

B

I
I

1

I

I

I

I
R1
R2
I
L ______ .~ R1Typ.lOkfi

R2Typ.150n

MECHANICAL DATA

Dimensions in mm

7.8 max

Q9m,,,
4.4

"'"

{t) Within this regiOn Itw- cross~$E'ctlon of thE' leads is uncontrolte-d

651

TO-126 (SOT -321

6/77

THERMAL DATA
Rth i-case
Rthi-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

3.12
83.3

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

IcBO

Collector cutoff
current (IE = 0)

for 2N6037
for 2N6038
for 2N6039

VCB = 40V
VCB = 60V
V CB = 80V

500
500
500

fLA
fLA
fLA

ICEO

Collector cutoff
current (IB = 0)

for 2N6037
for 2N6038
for 2N6039

VCE = 20V
VCE = 30V
VCE = 40V

500
500
500

fLA
fLA
fLA

ICEX

Collector cutoff
current (VEB = 1.5V)

for 2N6037
VCE
for 2N6038
VCE
for 2N6039
VCE
Tcase= 125°C
for 2N6037
VCE
for 2N6038
VCE
for 2N6039
VCE

= 40V
= 60V
= 80V

0.5
0.5
0.5

mA
rnA
m:A,.

= 40V
= 60V
= 80V

2
2
2

mA
mA
mA

2

mA

lEBO

Emitter cutoff
current (lc = 0)

VEB = 5V

VCEO (sus) * Collector-emitter
sustaining voltage
(IB = 0)

Ic

VCE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

= 2A
= 4A

IB
IB

VBE *

Base-emitter voltage

Ic

= 2A

VCE = 3V

hFE *

DC current gain

Ic
Ic
Ic

= 0.5A
= 2A
= 4A

V CE = 3V
VCE = 3V
VCE = 3V

Small signal current
gain

Ic
f

= 0.75A VCE = 10V
= 1 MHz

Collector-base
capacitance

VCB = 10V
f
= 1 MHz

hIe
CCBO

*

= 100mA
for 2N6037
for 2N6038
for 2N6039

IE

= 8mA
=40mA

= 0

Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
652

40
60
80

500
750
100

V
V
V
2
3

V
V

2.8

V

15000

-

-

1
100

pF

G- 2761

Safe operating areas

IC
(A)

10

*Ju~sk

OPERATION

~IC MAX PULSED

1Ous- e----

"
f-Ic MAXi cbNrlNuous
1\ 1 l'
~
\ \

,,

"\ \

DC OPERATIbN

-* FOR
-

SINGLE NON
REPETITIVE PU LS~

1 IO}lS

~

",

2N6037 2N6038
2N60~9

lms-

~

II

r+ ~

!l

,r

S
-

-

10

DC transconductance

DC current gain
6-2757

"FE,

G-2740

IC
(AI

"""

I

II

VCE =3V

~

1/1'

/

10>

10'
10-1

V

"cE·3Y

• •

LI

••
Ie (AI

o

653

0.5

1.5

VeE

(VI

Collector-emitter saturation voltage

Collector-emitter saturation voltage
G-l645

G-2746

VCE(sat )

I)

(v)

\

hFP250

1.5

r-f-

IC=3A
2A
lA

./

0.5

-"

0.5

o
IS (rnA)

Saturated switching characteristics

Small signal current gain

.... ,

G 2790

\

10' ,

10' ,

I

I

1111111

(~s)

VCE=30V
hFE=250
lSI =-I S2

-If

VCE =10V
IC =0,75A

§

---

I.

on

.....;-

..... "..

1111111

10,
6

1111111

1111111
2

10"

468

10"

2

468

10-'

2

468

2

i,

68

10

2

10 68

Ie (A)

f (MHz)

654

EPITAXIAL-BASE PNP

I

t

POWER DARLINGTONS
The 2N 6050, 2N 6051 and 2N 6052 are silicon epitaxial-base PN Ptransistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They
are intended for use in power linear and switching applications.
The complementary NPN types are the 2N 6057, 2N 6058 and 2N 6059 respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEO
VEBO
Ic
ICM

IB
Ptot
Tst9

Tj

2N6050 2N6051

-60V
-60V

Collector-base voltage (I E = 0)
Collector-emitter voltage (I B= 0)
Emitter-base voltage (I c=O)
Collector current
Collector peak current
Base current
Total power dissipation at T case ::;25°C
Storage temperature
Junction temperature

2N6052

-80V
-100V
-80V
-100V
-5V
-12A
-20A
-0.2A
150W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM
c

Bo--r~'
R'

R2

Rl TVP =10Kfi
R2 TYP =1500.
E

MECHANICAL DATA

Dimensions in mm

Collector connected to case

[1
{I·

26 zma x

e.

M

1 .7max",.117

10E

9

TO-3

655

10/82

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1.17

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
IcEO

Collector cutoff
current (Is = 0)

for 2N6050
for 2N6051
for 2N6052

IcEX

Collector cutoff
current (V E·S= -1.5V)

for 2N6050
V CE =
for 2N6051
V CE =
for 2N6052
VCE =
Tease = 150°C
for 2N6050
VCE =
for 2N6051
V CE =
for 2N6052
V CE =

IESO

Emitter cutoff
current (lc = 0)

Min. Typ. Max. Unit

Test conditions
V CE = -30V
V CE = -40V
V CE = -50V

VES = -5V

-1
-1
-1

mA
mA
mA

-80V
-100V

-Q.5
-0.5
-0.5

mA
mA
mA

-60V
-80V
-100V

-5
-5
-5

mA
mA
mA

-2

mA

-60Y

.

VCEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic

VCE(sat)*

Collector-emitter
saturation voltage

Ic
Ic

= -6 A
= -12A

Is
Is

=-24mA
= -120mA

-2
-3

V
V

VSE (sat) *

Base-emitter
saturation voltage

Ic

= -12A

Is

= -120mA

-4

V

VSE *

Base-emitter voltage

Ic

= -6A

VCE = -3V

-2.8

V

hFE *

DC current gain

Ic
Ic

= -6A
= -12A

VCE = -3V
VCE = -3V

hie

Small signal
current gain

Ic
f

= -5A
VCE = -3V
= 1 MHz

Ccso

Collector-base
capacitance

Vcs= -10V
f
= 1 MHz

*

= -100mA

for 2N6050
for 2N6051
for 2N6052

750
100

V
V
V

18000

-

4
500

IE = 0

Pulsed: pulse duration = 300 flos, duty cycle = 1.5%
656

-60
-80
-100

pF

Safe operating areas for 2N6050

Safe operating areas for 2N6051

G 3734

e

-Ie
(A)

6

r==•...
IC MAX CONTINUOUS'

B

6

(A) •

PULSE OPERATION*(.

IC MAX PULSED

10 '

G 3735

-Ie
.~.

Ic MAX PULSED

0.1

i'- i"l\

F = DC OP R JI N

F=
r=
i

*PULSE OPERA ION

~ I'1\

1'-0.1

IC MAX CONTINUOUS

ms
10

m

O.5ms

f-.--l-

Ims
5ms

,

f--.

+- 1-\-1\

1 ms

1,

*FOR SIIIGLE NON

5msr- j-.,

1\1 ,

I

DC OPERAT ION

J-.- REPETITIVE PULSE

II

.

1\

I
10

,

,

-VCE(V)

G 3736
B
6

F.+-, ...

.

...

t

~

+-"+-H'+

'

j--..

~ ~~ ~-t--t11
f-rcMAtpULSE5 i ·~:-+-I+-~'~P~U"JL~SE-JO-PII,...(Ar.II"b4j

r~lc~M-A~X~C01N~T1IN;urorUS~~~ji"-..,~fi"~~I'~0~;;/~S~

10 , '

0.5 ms

r-----

Ims
5ms

I
,

DC OPERATION

'~~§m1
S.
NO~_

FOR SINGLE
REPETIT V~ ,JPt;!'' 4' 'P",,,--F_+--+-++-H~
>

I

I 111111

,1------+---+--+.f-H-jIII-J+-11--+-+-+++h\t1

.

10" L-_...L_.L..l..-L..l..Ll...Ll._ _.L.-'-'....l.J...LLJ.JI
6

,

10

*FOR SINGLE NON
REPETITIVE PULSE

11 T I
10

Safe operating areas for 2N6052
-Ic
(A )

f---

,

-'k:E(V)

657

.

,

-VCE (V )

DC current gain

Collector-emitter saturation voltage
G- 4868

G 3739

-VCE(sa0

rTl

(V)

I

-lOA -12A

-6A

IC=-3I

I

~I-:----~_--+-_T_

, VCE=3V

I

, F=

10'

I

1I

,

10J

I

-....

12S·C

\
25'C

,

1\

I \

I

1\
I=:

I

=~

1\-40'C,

/

V
10'

/

II

.I!

I
I

I

i

ill
,

10- '

a

'8

10

4

4

68

68

10- 1

Collector-emitter saturation voltage

4

68

-Ie

10

(rnA)

Base-emitter saturation voltage

-

G 4866

G 4867

VSE(sat )1-(V

VCE(sat)
(V)

) f=:---

,

f--

f - - f---1--- --I-

, 1/
hFE=250

.

IT-

hFE =250

f - - I-

__ J.....-

I

i-----

-

--

I

t-""

,

T
-"

i

!!

10- 1

•10

I

i!

,

i

II

II II

,

I

68

,

8

I

le(A)

658

10

6

,

>erA)

Collector-base capacitance

DC transconductance
G 3742

G - 3143

-IC
(A)

CCBO 8
(pF)

VCE ;-3V

I

12

-- - r---

,

1--.

J

II

-... .....

I
4

I

I

:

I
1/
o

10

6

1.6

0.8

,

6

10

Small signal current gain

Saturated switching characteristics
G-37L,4

8

~j=!
i

;

,

,

,

10' 8
6

~-

t
{pS)8

11\

II i

,I

10

, i il
! I
:~Tcas.; 25°C~
,~: VCE=-3V

_'

,0IC=-5A

I

L

1

i

,

68

h FE"250
VCC =-30V

I,',

181=1B2

,

I

I

,

"

'I iii
"

tf

,

,

I' ,

~

I

Ir-.--t--t-._

•

:~--

m;I'-

,

,-

~

't=t=="~ p [tt---

10'

G 4878

., =f-+tJlllf - .
'ffit- .
:Jj--- -,-;--

,

.

-VCB(V)

."

!l~~~
iT
1111111

......

ton

........

I"

I

II"N
6

8

10- 1

10

f (MHz)

659

,

IC(A)

EPITAXIAL-BASE PNP
POWER DARLINGTONS
The 2N 6053 and 2N 6054 are silicon epitaxial-base PNP transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended
for use in power linear and switching applications.
The complementary NPN types are the 2N 6055 and 2N 6056 respectively.

ABSOLUTE MAXIMUM RATINGS
VCSO
VCEO
V ESO

Ic
ICM

Is

P tot
Tstg
Tj

2N6053 2N6054

Collector-base voltage (IE = 0)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature

-60V
-60V

-80V
-80V

-5V
-8A
-16A
-120mA
100W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM

Rl Typ.lOkn
R2 Typ. 150n

MECHANICAL DATA

6/77

Dimensions in mm

660

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max

1.75

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25'C unless otherwise specified)
Parameter
ICEX

Min. Typ. Max. Unit

Test conditions

Collector cutoff
current (V BE = 1.5V)

for 2N6053
VCE =
for 2N6054
VCE =
Tease = 150 'C
for 2N6053
V CE =
for 2N6054
VCE =

-60V
-SOV

-500
-500

flA
flA

-60V
-SOV

-5
-5

mA
mA

VCE = -30V
VCE = -40V

-0.5
-0.5

mA
mA

-2

mA

ICEO

Collector cutoff
current (IB = 0)

for 2N6053
for 2N6054

lEBO

Emitter cutoff
current (Ic = 0)

V EB

=

-5V

V CEO (sust Collector-emitter
sustaining voltage
(IB = 0)

Ic

=

-100mA

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

=
=

-4A
-SA

IB
IB

= -16mA
= -SOmA

-2
-3

V
V

VBE (sat) *

Base-emitter
saturation voltage

Ic

=

-SA

IB

= -SOmA

-4

V

V BE '

Base-emitter voltage

Ic

=

-4A

VCE = -3V

-2.S

V

hFE *

DC current gain

Ic
Ic

=
=

-4A
-SA

VCE = -3V
VCE = -3V

hIe

Small signal
current gain

Ic
f

=
=

-3A
1 MHz

V CE = -3V

Collector-base
capacitance

V CB = -10V
f
= 1 MHz

CCBO

*

Pulsed: pulse duration

=

for 2N6053
for 2N6054

300 fls, duty cycle

661

=

-60
-SO

750
100

V
V

1S000

-

4

IE

=

1.5%

0

-

300

pF

C;-2522

Safe operating areas

-IC
(Al

IC MAX PULSED

II

""

IC MAX CONTINUOUS

10
8

DC

'"

OPE~ATlON

"-"\

00

~s

'lms

,

5ms
\

,

\\
~

~

2N6053
2N6054
"

6

B

10

DC transconductance

DC current gain

G 2524

G-2521

-Ie
(A)

V E =-3V

:--......
10'

V

V
VCE=-3V

6

i\[\

4

~
10'

6

,

o

-le(A)

662

0.5

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 2525

-VCE(sat) f--+-+--t-t-ttH+--t--++++tl-tt--t--t-ti+Hit

-VCE(sat )
(V)

(V)

hFE=250

-I =3A

-I =

-IC=8A

:.-

o

o
10

Collector-base capacitance

Small signal current gain

-

G 2404

Ccso ,

-IB(mA)

10

-IC (Al

h'e ,

(pF) ,

~~~~If~~~;;~~~~~fiG-~2'4013;
VCE=-3V

IC=-3A

10'
10

10':m• •nll~1

--

mml

10':m• • •
10
, ,

2

10-3

10

663

468

10- 2

4.'

10-1

468

2

468

f(MHz)

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The 2N 6055 and 2N 6056 are silicon epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case intended for use in
power linear and switching applications.
The complementary PNP types are the 2N 6053 and 2N 6054 respectively.

ABSOLUTE MAXIMUM RATINGS
V CBO

VCEO
V EBO
Ic
ICM

IB
P tot
T stg
Tj

2N6055 2N6056

60V
60V

Collector-base voltage (IE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case"'; 25°C
Storage temperature
Junction temperature

80V
80V

5V
8A
16A
120mA
100W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM
c

,-------1
I
B

I
I

I
I

I

R1

R2

I
I

L _______ ~

MECHANICAL DATA

6/77

R1Typ.lOkfi

R2Typ.150n

Dimensions in mm

664

I'
I

THERMAL DATA
Rth j-ease

max

Thermal resistance junction-case

1.7S

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 2SoC unless otherwise specified)
Parameter
ICEX

Collector cutoff
current (V BE = -1.SV)

for 2N6055
V CE =
for 2N6056
V CE =
Tease = 1 SO °C
for 2N6055
V CE =
for 2N6056
V CE =

Min. Typ. Max. Unit
60V
80V

SOO
SOO

fLA
fLA

60V
80V

S
S

mA
mA

VCE = 30V
V CE = 40V

O.S
O.S

mA
mA

2

mA

ICEO

Collector cutoff
current (lB = 0)

for 2N6055
for 2N6056

lEBO

Emitter cutoff
current (lc = 0)

V EB

=

SV

V CEO (SUS)* Collector-emitter
sustaining voltage
(lB = 0)

Ic

=

100mA

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

=
=

4A
8A

IB
IB

= 16mA
= 80mA

2
3

V
V

VBE (sat) *

Base-emitter
saturation voltage

Ic

=

8A

IB

= 80mA

4

V

V BE *

Base-emitter voltage

Ic

=

4A

VCE

=

3V

2.8

V

hFE *

DC current gain

Ic
Ic

=
=

4A
8A

VCE
VCE

=
=

3V
3V

hIe

Small signal
current gain

Ic
f

=
=

3A
1 MHz

VCE

=

3V

Collector-base
capacitance

V CB
f

=
=

10V
1 MHz

CCBO

*

Test conditions

Pulsed: pulse duration

=

for 2N6055
for 2N6056

300 fLs, duty cycle
665

=

V
V

60
80

7S0
100

18000

-

4

IE

=

1.S%

0

-

200

pF

G-2523

Safe operating areas

II

IC
(Al

IC MAX PULSED I I

10

IC MAX CONTINUOUS

OO~s

"

~ N..ms

8

5ms
\

DC OPERATION

" ,,

r'I...

~

,

2N6055
2N6056

6

6

B

10

B

2

Id VCE (Vl

DC transconductance

DC current gain
G 2528

G 2531

IC
(A)

v

=3V

1

-.......J,
10'

10'

./

~

,/
VCE=3V

"
v
6

,

o

IC(A)

666

o.s

Collector-emitter saturation voltage

Collector-emitter saturation voltage

G 2530

G 2529

VCE(sat )

VCE(sat )
(V)

(V)

h FE =250

I =J.O

IC=6A

_SA

I

\

\

'\

"'"
o

o
10

10

IC (A)

Small signal current gain

Collector-base capacitance
G 2402

G 240f

,•
4

,

VCE=3V
IC=3A

10'

•
,•
,

10'

••
,

\

10'

-

-r-

,
10

•
,•
,

..

1\
4

10. 2

IS(mA)

10

..

I (I.1Hz)

10

667

EPITAXIAL-BASE NPN
POWER DARLINGTONS
The 2N 6057, 2N 6058 and 2N 6059 are silicon epitaxial-base NPN transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They
are intended for use in power linear and switching applications.
The complementary PNPtypes are the 2N 6050, 2N 6051 and 2N 6052 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO

VCEO
VEBO
Ic
ICM

IB

Ptot
Tstg
Tj

2N6057 2N6058 2N6059

Collector-base voltage (I E = 0)
Collector-emitter voltage (I B = 0)
Emitter-base voltage (I C= 0)
Collector current
Collector peak current
Base current
Total power dissipation at T case .:0:25 °C
Storage temperature
Junction temperature

60V
60V

80V
100V
80V
100V
5V
12A
20A
0.2A
150W
-65 to 200°C
200°C

INTERNAL SCHEMATIC DIAGRAM
;-----

MECHANICAL DATA

10/82

Dimensions in mm

668

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1.17

°C/W

ELECTRICAL CHARACTERISTlCS(T case=25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max.

Unit

1
1
1

mA
mA
mA

I cEO

CXlllector cutoff
current (I B=O)

for 2N6057
for 2N6058
for 2N6059

V cE=30V
V CE=40V
V CE=50V

I cEX

CXlllector cutoff
current (V BE=O)

for 2N6057
for 2N6058
for 2N6059
Tcase=150°C
for 2N6057
for 2N6058
for 2N6059

V CE=60V
V CE=80V
V CE=100V

0.5
0.5
0.5

mA
mA
mA

V CE=60V
V CE=80V
V cE =100V

5
5
5

mA
mA
mA

2

mA

lEBO

Emitter cutoff
current (I C= 0)

V EB=5V

VCEO (sus) *CXlllector-emitter
sustaining voltage
(lB = 0)

Ic
for
for
for

V CE (sat) * CXlllector-emitter
saturation voltage

Ic =6A
Ic =12A

I B =24mA
IB =120mA

2
3

V
V

V BE(sat) *

Base-emitter
saturation voltage

Ic =12A

IB =120mA

4

V

V BE *

Base-emitter voltage

Ic =6A

V CE=3V

2.8

V

h FE *

DC current gain

Ic =6A
Ic =12A

V CE=3V
V CE=3V

Small signal
current gain

Ic =5A
f =1 MHz

V cE=3V

CXlllector-base
capacitance

V CB=10V
f =1 MHz

hfe

CCBO

=100mA
2N6057
2N6058
2N6059

60
80
100

18000

IE =0

-

-

4

* Pulsed: pulse duration =300 IlS, duty cycle :s; 1.5%

669

750
100

V
V
V

-

300

pF

Safe operating areas for 2N6058

Safe operating areas for 2N6057
G 3759

IC

8

(A) ,

PU SE OPERATION

IC MAX PULSED

=

*PULSE OPERATION

IC MAX PU~SED

0.1

. . . 1'-, I"'~

IC MAX CONTINUOUS
10

G 3760

IC

"

(A) ,

...... ~ :'- 1\ r-.0"m

IC MAX CONTINUOUS

ms
10

DC OPER JION
O.5ms

'ms
5ms

ms

f--f+

\

'ms

5msi

\ \
*FOR SINGLE NON
REPETITIVE PULS

I I

I------

II

.\
10- 1

,0

G- 3761
B

c-

, c--------- ~--1

, 0,5 ms I-f-'l.

-++:+!+-,-i-l,,'-"'-"=msF-T
.

,I'

*FOR SINGLE NON
REPETITIVE PULSE

11111
,0

Safe operating areas for 2N6059
'C

\,\

DC OPERATION

II

10-1

--->

Oms

' -

i i i i : DC OPERATION

670

VCE (V)

I.

~

DC current gain

Collector-emitter saturation voltage
G 1,867

(, 1.872

VCE(s,t)
(V)

IC:

VCE o3V

10'

i

~

f-

1+

3A
6A
lOA
12A

25·

8

\

-4;1...;
V

~V

10'

8

,

,

I

'.
II!

10'

II

, '8

o

to

10- 1

10

Collector-emitter saturation voltage

IB(mA)

Base-emitter saturation voltage

G 4871.

VCE(satl
(V)

,

--

I

'hFEo25C
·1

: I
!

i 11

II

n

./

~i

Iii

,

I

I

,

1

Ii
I

I:!
,Iii

I

I

I

]I

Ii
1111

I

. II

I

'-r
!

i
11

I:'

!

!i I

I

IIII

I

i [lill

II II'
,

10-1

'Trt
II

,

,

68

10- 1

' C (A)

671

I
I
!
,

f--.
I

11

8

1

I"

I ~~

10

i

rt~
Ic(A)

DC transconductance

Collector-emitter saturation voltage
G 3766

G 3767

I

IC
(A)

CC60

VCE ,3V

(pF)

1---- . 12

..

.

I
IT

t--- I--

10'

I
II

r-

I

._L
i

II
10

o

0.8

VC6 (V)

Saturated switching characteristics

,

G 3768
8
5

,

,

"18

~l

-.;.

i
1--...,-

10'8
6

Ill"

:

i3=f

G 467£

(I'S)
.

-+ .

~

I

1.6

Small signal current gian
h to

I

i

6

iTT,

""

..

.e,

,

I

I
II
......;.-J. 4- I H-,'t
! I
! i
I

I

,

./

V

i-r-~

8~

I
I,

,

~+I
i

II

2

10- 3

~

6 8

2

10-2

4

6 8

10-1

2

4

6 8

2

!

i

I

i

468

t

(MHz)

10

672

I

I

'61"62

I

iI

I

i

I

' i

I

II '

hFE,250 ~

l=t

t--+-+-

t:

!

11
!

1

'

VCC-=30V

Ion

6

4

I

I

I~T
i

,

I

iii

!

iiI

I

:

I :

I

EPITAXIAL-BASE NPN/PNP

L..

GENERAL PURPOSE COMPLEMENTARY PAIRS
The 2N 6107, 2N 6109, 2N 6111, 2N 6288, 2N 6290 and 2N 6292 are epitaxial-base silicon
transistors in Jedec TO-220 plastic package. They are intended for a wide variety of
medium power switching and linear applications.
The PNP types are the 2N 6107, 2N 6109, 2N 6111 and their complementary NPN types
are the 2N 6292, 2N 6290 and 2N 6288 respectively.
PNP' 2N6107 2N6109 2N6111

ABSOLUTE MAXIMUM RATINGS
NPN

Vcso

VCEX
VCEO
V ESO

Ic
Is

Ptot
T stg
Tj

2N6292 2N6290 2N6288

Collector-base voltage (IE = 0)
Collector-emitter voltage (RSE = 100Q)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (lc = 0)
Collector current
Base current
Total power dissipation at Tease";; 25 'C
Storage temperature
Junction temperature

80V
80V
70V

60V
40V
60V
40V
50V
30V
5V
7A
3A
40W
-65 to 150 'C
150'C

, For PNP devices voltage and current values are negative

INTERNAL SCHEMATIC DIAGRAMS

~~'

"'1E

MECHANICAL DATA

:4'E

Dimensions in mm

Collector connected to tab.

673

6/77

THERMAL DATA
Thermal resistance junction-case
Thermal resistance junction-ambient

Rth j-ease
Rthj-amb

max
max

3.125
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICSo (Tease = 25°C unless otherwise specified)
Test conditions

IcEX

Parameter

Vce(V)

(VEs=1.5V)

80
60
40

Tease = 150°C
ICEO

IESO

(Is = 0)

Ic(A)

IB(A)

2N6111

2N6109

2N6107

PNP

2N6288

2N6290

2N6292

NPN

Min. Max. Min. Max. Min. Max. Unit
0.1
0.1
0.1

70
50
30

2
2

60
40
20

1

1

mA

1
1

0

(VES= 5 V)

mA

2

VCER (sus) *(R SE = 100n)

0.1

VCEO (sus) *

0.1

0

VCE (sat) *

2
2.5
3
7

0.2
0.25
0.3
3

1

1

40

60

80

30

50

70

V
V
1

1
1
3.5

mA

V

3.5

3.5

VSE *

4
4
4
4

2
2.5
3
7

hFE*

4
4
4
4

2
2.5
3
7

30 150
30 150
2.3
2.3
2.3

-

(f = 50 kHz)

4

0.5

20

20

20

-

PNP types

4

0.5

10

10

10

NPN types

4

0.5

4

4

4

hIe
fr

Ccso

(f= 1MHz, Vcs= 10V)

1.5
1.5
1.5
3

V

3

3
30 150

250

250

* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
° For PNP devices voltage and current values are negative
For characteristic curves see the BO 533 (NPN) and BO 534 (PNP) series
674

MHz
250

pF

I

EPITAXIAL-BASE NPN

r

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 6121, 2N 6122 and 2N 6123 are silicon epitaxial-base NPN power transistors in
Jedec TO-220 plastic package, intended for use in medium power linear and switching
applications.
The complementary PNP types are the 2N 6124, 2N 6125 and 6126 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CES
V CEO
V EBO

Ic
ICM

IB
Ptot
Tstg
Tj

2N6121

Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease"';; 25'C
Storage temperature
Junction temperature

45V
45V
45V

2N6122 2N6123

60V
60V
60V
5V
4A
7A

BOV
BOV
BOV

1A

40W
-65 to 150'C
150 'C

INTERNAL SCHEMATIC DIAGR:~:

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.

TO-220

675

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance juntion-ambient

max
max

3.12
70

'C/W
'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 'C unless otherwise specified)
Parameter

Min. Typ. Max.

Test conditions

ICBO

Collector cutoff
current (IE = 0)

for 2N6121
for 2N6122
for 2N6123

ICEX

Collector cutoff
current (VBE = -1.5V)

for 2N6121
VCE =
for 2N6122
VCE =
for 2N6123
VCE =
Tease = 125 'C
for 2N6121
VCE =
for 2N6122
VCE =
for 2N6123
VCE =

ICEO

Collector cutoff
current (lB = 0)

for 2N6121
for 2N6122
for 2N6123

lEBO

Emitter cutoff
current (Ic = 0)

V EB = 5 V

V CB = 45 V
VCB = 60 V
V CB = 80 V

100
100
100

[LA
[LA
[LA

45 V
60 V
80 V

100
100
100

[LA
[LA
[LA

45 V
60 V
80 V

2
2
2

mA
mA
mA

VCE = 45 V
VCE = 60 V
VCE = 80 V

1
1
1

mA
mA
mA

1

mA

V CEO (sus) * Collector-emitter
sustaining voltage
(lB = 0)

Ic

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

= 1.5A
=4A

IB
IB

V BE *

Base-emitter voltage

Ic

= 1.5 A

VCE = 2V

hFE *

DC current gain

Ic

= 1.5 A

VCE = 2 V
for 2N6121
for 2N6122
for 2N6123
VCE = 2 V
for 2N6121
for 2N6122
for 2N6123

h fe

*

Small signal
current gain

= 100 mA
for 2N6121
for 2N6122
for 2N6123

Ic

Unit

=4A

Ic = 1 A
f . = 1 MHz

=0.15A
= 1A

25
25
20

0.6
1.4

V
V

1.2

V

100
100
80

-

-

10
10
7

-

2.5

-

-

-

VCE = 4 V

Pulsed: pulse duration = 300 [Ls, duty cycle = 1 .5%

676

V
V
V

45
60
80

Safe operating areas

DC current gain
G- 2520

Ie

II II

(AI

Jll

UII

10

PULSE OPERATION*

Ie MAX PULSED
~ MAX

"
+ttl "

I

VCE=2V

-

lO,..s
CONTINUOUS

De OPERATION

G-lS1

II I

-

s

~\

I~

*FOR SINGLE NON
REPETITIVE PULSE

10'

lms
10ms

-

!

I\.

r\
2N6121-

I

2N61222N6123
I

10~

10

4

10-"

10

10-1

4

I

G-2442

,

VCE(satl

6

(VI

hFE=10

hFE=10

/

V

1/

1.5

/
/'
./

./

"'0.5

, ,

I()"'
1()"'

6

6.

-2515

veE(sat I

,

I

IC (AI

Base-emitter saturation voltage

Collector-emitter saturation voltage

(vI

,

6.

o

,

IC(AI

677

Transition frequency
fT
(MHz )

-

Collector-base capacitance
G-2423

-

G-2425

eeBO.
VeE=lV

(pF)

6

....
t\..

10

--

"' "-

:--....

10'

\

,....

o

10

'4

6

10-1

Ie (A)

I

4

4

••

10

1

Power rating chart

Saturated switching characteristics

.... ,.

-

G 2422

I

Ptot

(ps)'

(W)

Vee=30V

iIB1=-IB2
hFE=10

40

r-r-.

f' r-...

"- I\.

-

30

..... Is
If

_.

,,,,-

20

I'--.

r\.

" r-....

1/

10

'\

Ion
6

6 •

VeB (V)

•

50

Ie (A)

678

100

I,

EPITAXIAL-BASE PNP
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
The 2N 6124, 2N 6125 and 2N 6126 are silicon epitaxial-base PNP power transistors in
Jedec TO-220 plastic package, intended for use in medium power linear and switching
applications.
The complementary NPN types are the 2N 6121, 2N 6122 and 2N 6123 respectively.

ABSOLUTE MAXIMUM RATINGS
Vcso
V CES
VCEO

V ESO
Ic
ICM

Is

Ptot
Tstg
Tj

2N6124 2N6125 2N6126

Collector-base voltage (IE = 0)
Collector-emitter voltage (VSE = 0)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (lc = 0)
Collector current
Collector peak current
Base current
Total power dissipation Tease';;; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

-45V
-45V
-45V

-80V
-60V
-60V
-80V
-80V
-60V
-5V
-4A
-7A
-1 A
40W
-65 to 150°C
150°C

DIAGR~~:

Dimensions in mm

MECHANICAL DATA
COllector. connected to tab.

TO-220

679

6/77

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance juntion-ambient

max
max

3.12
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Min. Typ. Max. Unit

Test conditions

IcBO

Collector cutoff
current (IE = 0)

for 2N6124
for 2N6125
for 2N6126

V CB = -45 V
V CB = -60 V
V CB = -80 V

-100
-100
-100

[LA
[LA
[LA

ICEX

Collector cutoff
current (VBE = 1.5V)

for 2N6124
for 2N6125
for 2N6126
Tease = 125°C
for 2N6124
for 2N6125
for 2N6126

V CE = -45 V
V CE = -60 V
V CE = -80 V

-100
-100
-100

[LA
[LA
[LA

VCE = -45 V
VCE = -60 V
VCE = -80 V

-2
-2
-2

mA
mA
mA

VCE
VCE
VCE

-1
-1
-1

mA
mA
mA

-1

mA

ICEO

Collector cutoff
current (IB = 0)

for 2N6124
for 2N6125
for 2N6126

lEBO

Emitter cutoff
current (lc = 0)

V EB

=

-5V

V CEO (sust Collector-emitter
sustaining voltage
(lB = 0)

Ic

=

-100 mA

VCE (sat) *

Collector-emitter
saturation voltage

Ic
Ic

= -1.5A

V BE *

Base-emitter·voltage

Ic

hFE *

DC current gain

Ic

*

Small signal
current gain

Pulsed: pulse duration

Ic
f
=

-45 V
-60 V
-80 V

for 2N6124
for 2N6125
for 2N6126

Ic

hIe

=
=
=

-45
-60
-80

V
V
V

IB
IB

= -0.15A

=

-1A

-0.6
-1.4

V
V

= -1.5A

VCE

=

-2 V

-1.2

V

= -1.5A

VCE = -2 V
for 2N6124
for 2N6125
for 2N6126
VCE = -2 V
for 2N6124
for 2N6125
for 2N6126

100
100
80

-

=

=

=
=

-4 A

-4A

-1 A
1 MHz

300 [Ls, duty cycle
680

25
25
20

-

10
10
7

-

2.5

-

V CE = -4 V
1.5%

-

-

-

DC current gain

Safe operating areas
G 2521

(A)
10

II It

II I

"
++tt "

VCE=-lV

-

10!,s

IC MAX CONTINUOUS
DC OPERATION

I

PULSE OPERATION *

IC MAX PULSED

0-2517

II I

II II

-IC

-

100"s

~

*FOR SINGLE NON
REPETITIVE PULSE

10'

Ims

!

r--.

/"\

lOms

"-

2N6124-f--

"'1\
II

2N6125-f--

Ii

2N6126

,

,

10

10-1

10

,

I

-Ic

6

,

(A)

Base-emitter saturation voltage

Collector-emitter saturation voltage

-

G 2438

519

-VBE(sat)
(V)

hFE=IO

1.5
hFE=IO

/"

10-1

/

/

./

0.5

./

10-'

-

-

--

./

o

, ,

-Ie (A)

-IC(A)

681

Transition frequency

Collector-base capacitance

fT

CCBQ

(MHz )

(pF),

•

Vr.=-IV

15

"'-

:\..
:\..
:\..

10

I"--

10'

~

1"\

10

,

6

,

,

G-2419

,

G_2518

Ptot

(W)
6

,

Vee =-30V
181=-182

40

e 'O

hF

6

,
2

I'..
l\.

2

,

30

fts

........

.......

,..,.

"" t-.

.......

1'\

20

I'\.

:--.

1\.

t-..!.!.

10

'\

ton
6

,

1,\
6

..

-VCB(V)

Power rating chart

Saturated switching characteristics
t
(,us)

,
10

-Ie (A)

,

50

-Ie (A)

682

100

EPITAXIAL-BASE NPN/PNP

GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS
The 2N6282, 2N6283 and 2N6284 NPN types and the complementarYWPElS are mounted
in jedec TO-3 metal case, intended for use in general-purpose amplifier c!ndlow-frequency
switching applications. The complementary PNP types are 2N6285,21\i628() and 2N6287.

NPN 2N~82
* PNP> 2116285

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (I E = 0)
Collector-emitter voltage (I B 7,9)
Emitter-base voltage (Ie = O),
Collector current
"<> ,'",........}.
Collector peak curren~.••(~.,::;;Jalin~l .
Base current
..
:~~ion~.r cas~;;;' 25°C
Storage temp~~atci.~~..,
Junction tE!mp~ratQ'te'
* For PNP

types.ilQltagel~

60V
60V

2N6283
2N6286

2N6284
2N6287

80V
80V
5V
20A
40A
O.5A
160W
-65 to 200°C
200°C

100V
100V

current values are negative

INTE
NPN

'~""

c

BG-~T~if
~.
s-

MECHANICAL DATA

5602

E

Dimensions in mm

TO-3

683

10/82

THERMAL DATA
Rth j-ease

Thermal resistance junction-case

max.

1.9

°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

ICEO

Collector cutoff
current (I B = 0)

for 2N6282/85
for 2N6283/86
for 2N6284/87

lEBO

Emitter cutoff
current (I C = 0)

V BE

I CEX

Collector cutoff
current (V BE = 1,5V)

V CE = Rated V CBO
V CE = Rated V CBO
Tease = 150°C

Min. Typ. Max. Unit

VCE = 30V
VCE = 40V
VCE = 50V

= 5V

IB = 0
for 2N6282/85
for 2N6283/86
for 2N6284/87

1
1
1

mA
mA
mA

2

mA

0.5

mA

5

mA

V CEO (sus) Collector-emitter
sustaining voltage

Ic = O.lA

V CE(sat) * Collector-emitter
saturation voltage

Ic
Ic

= lOA
= 20A

IB = 40mA
IB = 200mA

2
3

V
V

V BE(sat) * Base-emitter
saturation voltage

Ic

= 20A

IB = 200mA

4

V

VBE(On) * Base-emitter voltage

Ic = lOA

VCE

2.8

V

hFE *

DC current gain

Ic = lOA
Ic = 20A

VCE = 3V
VCE = 3V

18000

-

CCBO

Collector-base
capacitance

V CB = 10V
IE = 0
f=O.lMHz
for 2N6282/6283/6284
for 2N6285/6286/6287

400
600

pF
pF

hfe

Small signal current
gain

* Pulsed: pulse duration = 300

Ic = lOA
f = 1 KHz
fJ-S,

= 3V
750
100

VCE = 3V

duty cycle = 2%.

For PNP types voltage and current values are negative

684

V
V
V

60
80
100

300

-

MULTIEPITAXIAL PLANAR NPN

HIGH SPEED SWITCHING APPLICATIONS
The 2N 6354 is a silicon planar multiepitaxial NPN transistor in Jedec TO-3 metal case. It
is intended for use in high speed switching applications in military and industrial
equipment.

ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (IE = 0)
Collector-emitter voltage (R SE = 500n)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ie = 0)
Collector current
Collector peak current
Base current
Total power dissipatioJl at Tease';;; 25°C
Storage temperature
Junction temperature

150
130
120
6.5
10
12

5
140
-65 to 200
200

v
V
V

V
A
A
A
W
°C
°C

INTERNAL SCHEMATIC DlAGR~~

MECHANICAL DATA

Dimensions in mm

685

10/82

THERMAL DATA
Rth j-case

max

Thermal resistance junction-case

1.25

·C/W

ELECTRICAL CHARACTERISTICS (T case = 25 ·C unless otherwise specified)
Parameter

Test conditions

Icso

Collector cutoff
current (IE = 0)

Vcs= 150 V

ICES

Collector cutoff
current (V SE = 0)

VCE = 140 V
VCE = 140 V

ICEO

Collector cutoff
current (Is = 0)

VCE = 100 V

IESO

Emitter cutoff
current (lc = 0)

VES = 6.5 V

Min. Typ. Max. Unit

T case = 150·C

5

mA

10
20

mA
mA

20

mA

5

mA

VCEO (SUS)* Collector-emitter
sustaining voltage
(Is = 0)

Ic

= 200 mA

120

V

VCER (sust Collector-emitter
sustaining voltage
(RsE= 1000)

Ic

= 200 mA

130

V

VCE(sat) *

Collector-emitter
saturation voltage

Ic
Ic

= 10A
=5A

Is
Is

= 1A
= 0.5 A

1
0.5

V
V

VSE (sat) *

Base-emitter
saturation voltage

Ic
Ic

= 10A
=5A

Is
Is

;", 1 A
= 0.5A

2
1.3

V
V

hFE *

DC current gain

Ic
Ic

=5A
= 10 A

V CE = 2 V
V CE = 2 V

150
100

-

Small signal
current gain

Ic
f

= 1A
V CE = 10 V
= 10 MHz

Collector-base
capacitance

IE
f

= 0
= 1 MHz

Rise time

Ic
lSI
Ic
lSI

=
=
=
=

, hIe
Ccso
t,

-

-

8

Vcs= 10 V

5A
Vcc= 30 V
-ls2 = 0.5A
10 A
Vcc= 30 V
-ls2 = 1A

686

20
10

300

pF

0.3

f1s

1

f1s

ELECTRICAL CHARACTERISTICS (continued)
Parameter
Storage time

ts
tf

IS/b

Test conditions

Fall time

**

ES!b

Min. Typ. Max. Unit

Vee= 30 V
Ie = 5A
IB1 = -IB2 = 0.5A

1

flS

Vee= 30 V
Ie =5A
IB1 = -IB2 = 0.5A

0.2

flS

Second breakdown
collector current

VeE = 25 V

Second breakdown
energy

Ie = 5A
R SE = 5012

V EB = 1 V
L = 25 flH

5.5

A

0.3

mJ

* Pulsed: pulse duration = 300 fLs, duty cycle = 1.5%
** Pulsed: 1 s, non repetitive pulse

-

G 2711

Safe operating areas

IC
(A)

r----"
IC

10

M~X

II

*1 PUSIEI II

OPERATIO~

ipJLJEbl

Ic MAX (CONTINUOUS)
/'

1---

./

~DC
1--'

OPERATIONI/'

JJ j

*IREPETITIVE
FOR SINGLE NON
PULSE

lOfll

,

,,

\

\

,
1\

100ps-

I

\

\
VCEO MAX=120V

III
10

687

ms£=

I

c-

i
10ml

I

DC current gain

Collector-emitter saturation voltage
G 4889

G

'I '
Vce SV
I ! I' i ----VCE" 2V

1

,11 '

I

150

,

~

"FE "to

I

.$

!

I
100

4890

,

VCE(sal )
,

, I

,

....:-:-,.,

.-

,

'1 ,

.,,'

,

,

I

50

r;rI

p;::: ~

.'\
\'\

I

12S'C

"

f-- -SS'C
,2S'C
2

10-1

10

10

Collector-emitter saturation voltage

Ic(A)

Base-emitter saturation voltage
_z'

G 4891

G 70

VBE(sa I)

VCE(sat )

' !I!

!

(V)

I

:i'

I

:1,

I

I

'I

i I
,

hFE",O

'I

,

-+-

I

I

,
1.8

f';;

tt
I
I

20A

,....

I

1.2

I
I

I

lSA

I-0.6

I

Ii

lOA

'!'.:

I

SA

T

2A

a

10

Is(A)

688

VBE(on)

VS.

Saturated switching characteristics

collector current
G 1,892

•

VBE(on )r--

4.5

(/.15)

r-

VCE

'-~

~5v

i

I

-I--

~

-~

I

~-"-

I

~

./ /.25·C

-----

'I

-~

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--

--

~.

'on

II

f-~

I
I

-f~

--

~--

>~
~

-

~-

~

:--

10-'
10

'0

'CIA)

Transition frequency

Collector-base capacitance

G- 4895

G_4 .9,
(pF)

ft
(MHz)

10'

60

CCBO

.....

-fI

-t

/

125°C

o

).
--

--

-

--

H-~

-+-

~

"-

I

I

+- - III VCC~30V(
I r--r-. I IJBI~-'B2
hFE·IO I

;~5:'C

.- .-

-

'-~

--f-

I

...

'--~--

!'",
1.5

---

~~

--+

f--- f-

, il

2.5

0.5

-+:
-4.~

,;

,

~~->-

f------

Ir---- f--

,

3.5

G _4 .9

-

'tE :15V "\.

50

.....

40

.......... ...........

/
/

/'

30
20

10

o

to

10

10' VCS(V)

'CIA)

689

EPITAXIAL-BASE NPN
POWER DARLINGTON TRANSISTORS
The 2N 6386, 2N 6387 and 2N 6388 are silicon epitaxial-base NPN transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intended for use in low and medium frequency power applications.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEV

VCER
VCEO

VEBO
Ic
ICM

IB
Ptot
Tstg
Tj

2N6386 2N6387 2N6388

Collector-base voltage (lB = 0)
Collector-emitter voltage (VBE = -1.5 V)
Collector-emitter voltage (RBE~ 1000)
Collector-emitter voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector current .
Collector peak current
Base current
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature

MECHANICAL DATA

6/77

40V
40V
40V
40V
5V
8A

60V
60V
60V
60V
5V
10A
15A
250mA
65W
-65 to 150°C
150 °C

80V
80V
80V
80V
5V
10A

Dimensions in mm

690

I
I

I

I.

I

..,I
I

THERMAL DATA
Rth

j-ease

Thermal resistance junction-case

max

1.92

'C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 'c unless otherwise specified)
Parameter

ICEV

Collector cutoff
current (V BE = -1.5 V)

Test conditions

V CE = 40 V
V CE = 60V
VCE = 80 V
Tease = 125'C
VCE = 40 V
VCE = 60 V
VCE = 80 V

for 2N6386
for 2N6387
for 2N6388

0.3
0.3
0.3

mA
mA
mA

for 2N6386
for 2N6387
for 2N6388

3
3
3

mA
mA
mA

for 2N6386
for 2N6387
for 2N6388

1
1
1

mA
mA
mA

5

mA

ICEO

Collector cutoff
current (IB = 0)

VCE = 40 V
VCE = 60 V
VCE = 80 V

lEBO

Emitter-base
current (lc = 0)

VEB = 5V

VCEO (sus) * Collector-emitter
sustaining voltage
(IB = 0)

Ic

V CER (sust Collector-emitter
sustaining voltage
(R BE = 100 £2)

Ic

V CEV (sust Collector-emitter
sustaining voltage
(VBE= -1.5V)

Ic

V CE (sa\)*

Collector-emitter
saturation voltage

Min. Typ. Max. Unit

for
Ic
for
Ic
for
Ic
for
Ic

= 200 mA
for 2N6386
for 2N6387
for 2N6388

40
60
80

V
V
V

for 2N6386
for 2N6387
for 2N6388

40
60
80

V
V
V

for 2N6386
for 2N6387
for 2N6388

40
60
80

V
V
V

= 200 mA

= 200 mA

2N6386
= 3A
IB = 6 mA
2N6387 and 2N6388
=5A
IB = 10mA
2N6386
=8A
IB = 80mA
2N6387 and 2N6388
= 10 A
IB = 100mA

691

2

V

2

V

3

V

3

V

ELECTRICAL CHARACTERISTICS (continued)
Parameter
V BE *

hFE *

hIe

V F*

Base-emitter voltage

DC current gain

Test conditions
for
Ic
for
Ic
for
Ic
for
Ic

2N6386
=3A
VCE = 3
2N6387and2N6388
= 5A
V CE = 3
2N6386
= SA
V CE = 3
2N6387 and2N6388
= 10 A
V CE = 3

V

2.S

V

V

2.S

V

V

4.5

V

V

4.5

V

for 2N6386
VCE = 3 V
Ic = 3A
fur2N6387and2N6388
V CE = 3 V
Ic =5A
for 2N6386
V CE = 3 V
Ic = 8A
for 2N6387 and 2N6388
V CE = 3 V
Ic = 10 A

Small signal
current gain

Ic = 1 A
V CE = 10 V
V CE = 10V

Paralled-diode
forward voltage

for
IF
for
IF

f
f

1000

20000

-

1000

20000

-

100

-

100

-

IE
f

ISlb **

Second breakdown
collector current

V CE = 25 V

ES/b

Second breakdown
energy

L = 12 mH
V BE = -1.5V

= 0
= 1 MHz

4

V

4

V

200

pF

V CB = 10 V

RBE = 100[2
Ic = 4.5 A

* Pulsed: pulse duration = 300 its, duty cycle = 1.5%
** Pulsed: 1s non repetitive pulse

692

-

= 1 MHz 20
= 1kHz 1000

2N6386
= 8A
2N6387 and 2N6388
= 10 A

Collector-base
capacitance

CCBO

Min. Typ. Max. Unit

2.6

A

120

mJ

I
I

I

EPITAXIAL-BASE NPN

r
I

i

POWER LINEAR AND SWITCHING APPLICATIONS
The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors
mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary PNP types are the 2N6489, 2N6490 and 2N6491 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
V CEX
VCEO
VEBO
Ic
IB
Ptot
T stg
Tj

Collector-base voltage (IE = 0)
Collector-base voltage (VBE = 1.5V;
RBE = 100fl)
Collector-base voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector-current
Base-current
Total power dissipation at Tease ::::;25°C
Tamb ::::;25°C
Storage temperature
Junction temperature

2N6486

2N6487

2N6488

50V
50V

70V
70V

90V
90V

40V

60V
80V
5V
15A
5A
75W
1.8W
-65 to 150°C
150°C

INTERNAL SCHEMATIC DIAGR:~~r

E

MECHANICAL DATA

Dimensions in mm

Collector connected to tab.

3.85

.1.5

t

max

~c:i
0.5

693

5/80

THERMAL DATA
Rth j-ease
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

1.67
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
ICEO

Collector-cutoff
current (Is = 0)

ICEX

Test conditions
for 2N6486
for 2N6487
for 2N6488

Min. Typ. Max. Unit

VCE = 20V
VCE = 30V
VCE = 40V

1
1
1

Collector-cutoff
for 2N6486
current (VsE=-1.5V. for .2N 6487
for 2N6488
RSE = 100n)
Tease = 150°C
for 2N6486
for 2N6487
for 2N6488

VCE = 45V
VCE =65V
VCE = 85V

0.5
0.5
0.5

VCE = 40V
VCE = 60V
VCE = 80V

5
5
5

mA
mA
mA

ICER

Collector-cutoff
for 2N6486
cu rrent (RSE = 100n) for 2N6487
for 2N6488

VCE = 35V
VCE = 55V
VCE = 75V

0.5
0.5
0.5

mA
mA
mA

IESO

Emitter-cutoff
current (Ic = 0)

1

mA

V SE = 5V

mA
mA
mA
mAo
mA
mA

V CEO (sus)*Coliector-emitter
sustaining voltage
(Is = 0)

Ic = 200mA
for 2N6486
for 2N6487
for 2N6488

40
60
80

V
V
V

VCER (sus)*Collector-emitter
sustaining voltage
(RSE = 100n)

Ic = 200mA
for 2N6486
for 2N6487
for 2N6488

45
65
85

V
V
V

694

ELECTRICAL CHARACTERISTICS (continued)
Test conditions

Parameter
V CEX (sus) * Collector-em itter
sustaining voltage
(V BE = -1.5V;
RBE = 100D)

Ic = 200mA
for 2N6486
for 2N6487
for 2N6488

50
70
90
1.3
3.5

V
V

VCE
VCE

= 4V
= 4V

1.3
3.5

V
V

VCE
VCE

= 4V
= 4V

VCE

= 4V

VCE

= 4V

Ic
Ic

= 5A
= 15A

IB
IB

V BE *

Base-emitter
voltage

Ic
Ic

= 5A
= 15A

hFE *

DC current gain

Ic
Ic

= 5A
= 15A

hfe

Small signal
current gain

(sat) *

Ic = 1A
f = 1 MHz
Ic = 1A
f = 1KHz

* Pulsed: pult'\e duration = 300ILS, duty cycle ~2%.

695

V
V
V

= 0.5A
= 5A

Collector-emitter
saturation voltage

VCE

Min. Typ. Max. Unit

20
5

150

-

5

-

25

-

EPITAXIAL-BASE PNP

POWER LINEAR AND SWITCHING APPLICATIONS
The 2N6489, 2N6490 and 2N6491 are silicon epitaxial-base PNP transistors
mounted in Jedec TO-220 plastic package.
They are intended for use in power linear and switching applications.
The complementary NPN types are the 2N6486, 2N6487 and 2N6488 respectively.

ABSOLUTE MAXIMUM RATINGS
VCBO
VCEX
VCEO

VEBO
Ic
IB
Ptot

Collector-base voltage (IE = 0)
Collector-base voltage (VBE = 1.5V;
RBE = 100D)
Collector-base voltage (lB = 0)
Emitter-base voltage (Ic = 0)
Collector-current
Base-cu rrent
Total power dissipation at Tease ~25°C
Tamb ~25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC

2N6489

2N6490

2N6491

-50 V
-50V

-70V
-70V

-90V
-90V

-40V

-60V
-80V
-5V
-15A
-5A
75W
1.8W
-65 to 150°C
150°C

D1AGR~~_~r

E

MECHANICAL DATA

5/80

Dimensions in mm

696

THERMAL DATA
Rth j-case
Rth j-amb

Thermal resistance junction-case
Thermal resistance junction-ambient

max
max

1.67
70

°C/W
°C/W

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter

Test conditions

Min. Typ. Max. Unit

ICED

Collector-cutoff
current (Is = 0)

for 2N6489
for 2N6490
for 2N6491

VCE = -20V
VCE = -30V
VCE = -40V

-1
-1
-1

mA
mA
mA

ICEX

Collector-cutoff
current (VSE = 1.5V
RSE = 100D)

for 2N6489
for 2N6490
for 2N6491
Tease = 150°C
for 2N6489
for 2N6490
for 2N6491

VCE = -45V
VCE = -65V
VCE = -85V

-0.5
-0.5
-0.5

mA
mA
mA

VCE = -40V
VCE = -60V
VCE = -80V

-5
-5
-5

mA
mA
mA

VCE = -35V
VCE = -55V
VCE = -75V

-0.5
-0.5
-0.5

mA
mA
mA

-1

mA

ICER

Collector cutoff
for 2N6489
current(R SE = 1OOD) for 2N6490
for 2N6491

IESO

Em itter-cutoff
current

V SE = -5V

VCED (sus) *Collector-emitter
sustaining voltage
(Is= 0)

Ic = -200m A
for 2N6489
for 2N6490
for 2N6491

-40
-60
-80

V
V
V

VCER (sus)*Collector-emitter
sustaining voltage
(RSE = 100D)

Ic = -200m A
for2N6489
for 2N6490
for 2N6491

-45
-65
-85

V
V
V

697

ELECTRICAL CHARACTERISTICS (continued)
Parameter
VCEX (SUS)* Collector-emitter
sustaining voltage
(VBE = 1.5V;
RBE = 100D)

Test conditions
Ic = -200mA
for 2N6489
for 2N6490
for 2N6491

Min. Typ. Max. Unit
-50
-70
-90

V
V
V

Collector-emitter
saturation voltage

Ic = -5A;
Ic = -15A;

IB = -0.5A
IB = -5A

-1.3
-3.5

V
V

VBE *

Base-emitter
voltage

Ic = -5A
Ic = -15A

VCE = -4V
VCE = -4V

-1.3
-3.5

V
V

hFE *

DC current gain

Ic = -5A
Ic = -15A

VCE = -4V
VCE = -4V

hie

Small signal
emitter gain

Ic = -1A
f = 1MHz
Ic = -1A
f = 1KHz

VCE = -4V

VCE

(sat)

*

150

-

5

-

25

-

VCE = -4V

* Pulsed: pulse duration = 300JLs, duty cycle ~2%.

698

20
5

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE POWER SWITCH
The 2N6544 and 2N6545 are multiepitaxial mesa NPN transistors in Jedec TO-3
metal case. They are intended for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS
VCES
VCEX
VCEO
V EBO

Ic
ICM

IB
Ptot
Tstg
Tj

Collector-emitter voltage (VBE = 0)
(Clamped) Collector-emitter voltage (VBE = -5V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current (tp = 10ms)
Base current
Total power dissipation at Tease"'; 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

:
4

MECHANICAL DATA

2N6544

2N6545

650V
350V
300V

850V
450V
400V

9V
8A
16A
8A
125W
-65 to 20QoC
200°C

Dimensions in mm

Collector connected to case

699

5/80

THERMAL DATA
Rth j-ease

ELECTRICAL CHARACTERISTICS (Tease
Parameter
ICES

ICER

IESO

max.

Thermal resistance junction-case

Collector cutoff
current (VSE = 0)

°C/W

= 25°C unless otherwise specified)

Test conditions
for 2N6544
for2N6545

1.4

Min. Typ. Max. Unit

VCE = 650V
VCE = 850V

0.5
0.5

mA
mA

Tease = 100°C
for 2N6544
VCE = 650V
for2N6545
VCE = 850V

2.5
2.5

mA
mA

3
3

mA
mA

1

mA

Collector cutoff
current (RSE = 50fl)

Tease = 1 00 °C

Emitter cutoff
current (Ic = 0)

V ES = 9V

for2N6544
for 2N6545

VCEO (sus) * Collector-emitter
sustaining voltage
(Is = 0)

Ic = 100mA
for 2N6544
for 2N6545

VCEX(SUS) Collector-emitter
sustaining voltage
(clamped Es/b)

Iclis = 5
L = 180ILH
V SE = -5V

VCE = 650V
VCE = 850V

300
400

V
V

350
450

V
V

V clamp = rated V CEO (sus)-1 OOV
Ic = 8A
for 2N6544
200
for2N6545
300

V
V

Tease = 100°C
V clamp = rated V CEX (sus)
Ic = 4.5A
for 2N6544
for 2N6545

Is/b

Second breakdown
collector current

t = 1 s (non repetitive)
VCE = 100V

0.2

A

Es/b

Second breakdown
energy

L = 40ILH
V SE = -4V
RSE = 50fl

500

ILJ

700

ELECTRICAL CHARACTERISTICS (continued)

hFE

Parameter

.

VeE (sat)

.

VSE (sat)

.

Test conditions

DC current gain

Ie = 2.5A
Ie = 5A

Co Ileeto r-em itter
saturation voltage

Ie = 5A
Is = 1A
Ie = 8A
Is = 2A
Tease = 100 D C
Is = 1A
Ie = 5A

Base..emitter
saturation voltage

VeE = 3V
VeE = 3V

Min. Typ. Max. Unit
12
7

Ie = 5A
Is = 1A
Tease = 100 D C
Ie = 5A
Is = 1A

h

Transition
frequency

Ie = 0.3A
f = 1MHz

VeE = 10V

CeEiO

Collector-base
capacitance

Ves = 10V
f = 1 MHz

IE = 0

ton

Turn-on time

ts

Storage time

tf

Fall time

ts

Storage time

tf

Fall time

6

60
35

-

1.5
5

V
V

2.5

V

1.6

V

1.6

V

24 MHz
200

pF

RESISTIVE LOAD

1

p.,s

Ie = 5A
Ve =250V
IS1 = -ls2 = 1A

4

p.,s

1

p.,s

4

p.,s

0.9

p.,s

INDUCTIVE LOAD
Ie = 5A (pk)
V SE = -5V
IS1 = 1A
L=180p.,H
Tease = 100 D C
for 2N6544 Vel amp =350V
for 2N6545
Velamp =450V

• Pulsed: pulse duration = 300p.,s, duty cycle = 1.5 %.
For characteristic curves see the BUW 35 type.

701

MULTIEPITAXIAL MESA NPN
HIGH VOLTAGE, HIGH CURRENT POWER SWITCH
The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3
metal case, intended in fast switching applications for high output power.

ABSOLUTE MAXIMUM RATINGS
VCES
VCEX
VCEO
VESO
Ic
ICM

Is
Ptot
Tstg

Tj

Collector-emitter voltage (VSE = 0)
(Clamped) Collector-emitter voltage (VSE = -5V)
Collector-emitter voltage (Is = 0)
Emitter-base voltage (Ic = 0)
Collector current
Collector peak current
Base current
Total power dissipation at Tease ~ 25°C
Storage temperature
Junction temperature

INTERNAL SCHEMATIC DIAGR:

:
4

MECHANICAL DATA

5/80

2N6546

2N6547

650V
350V
300V

850V
450V
400V
9V

15A
30A
10A
175W
-65 to 200°C
200°C

Dimensions in mm

702

THERMAL DATA
Rth j-ease

ELECTRICAL CHARACTERISTICS (Tease

ICER

IESO

°C/W

= 25°C unless otherwise specified)

Test conditions

Parameter
ICES

max.

Thermal resistance junction-case

Min. Typ. Max. Unit

VCE
VCE

=
=

650V
850V

1
1

mA
mA

VCE
VCE

=
=

650V
850V

4
4

mA
mA

Collector cutoff
current (RSE = 50n)

Tease = 100°C
for 2N6546
VCE
for 2N6547
VCE

=
=

650V
850V

5
5

mA
mA

Emitter cutoff
current (Ic = 0)

V ES

1

mA

Collector cutoff
current (VSE = 0)

for 2N6546
for 2N6547
Tease = 100°C
for 2N6546
for 2N6547

= 9V

V CEO (sus) ·Collector-em itter
sustaining voltage
(Is = 0)

Ic = 100mA
for 2N6546
for 2N6547

300
400

V
V

V CEX (sus)· Collector-emitter
sustai n i ng voltage
(clamped E S/B )

Ielis = 5
L = 180/-LH
V SE = -5V
Tease = 100°C
Velamp = rated V CEX (sus)
Ic = 8A
for 2N6546
for 2N6547

350
450

V
V

V clamp = rated V CEO (8us)-100V
Ic = 15A
200
for 2N6546
for 2N6547
300

V
V

Second breakdown
collector current

t = 1 s (non repetitive)
VCE = 100V

A

Second breakdown
energy

L = 40/-LH
V SE = -4V
RSE = 50n

ISlb

Es/b

703

0.2

2

mJ

ELECTRICAL CHARACTERISTICS (continued)
Parameter
hFE *

DC current gain

VeE (sat) * Collector- emitter
saturation voltage

VSE (sat) * Base-emitter
saturation voltage

Test conditions
Ie = 5A
Ie = 10A

VeE = 2V
VeE = 2V

Ie = 10A
Is = 2A
Tease = 100°C
Ie = 10A
Is = 2A
Ie = 0.5A
f = 1MHz

VeE = 10V

Collector-.base
capacitance

Ves = 10V
f = 1MHz

IE = 0

ton

Turn-on time

ts

Storage time

tf

Fall time

ts

Storage time

tf

Fall time

C eso

12

6

Ie = 10A
Is = 2A
Ie = 15A
Is = 3A
Tease = 100°C
Ie = 10A
Is = 2A

Transition
frequency

fT

Min. Typ. Max. Unit

6

60
30

-

1.5
5

V
V

2.5

V

1.6

V

1.6

V

24 MHz

360

pF

RESISTIVE LOAD

1

f,A-s

Vee = 250V Ie = 10A
IS1 = -l s2 = 2A

4

f,A-s

0.7

f,A-s

5

f,A-s

1.5

f,A-s

INDUCTIVE LOAD
Ie = 10A (pk)
V SE = -5V
IS1 = 2A
L = 180f,A-H
Tease = 100°C
for 2N6546
Vclamp = 350V
for 2N6547
Vclamp = 450V

* Pulsed: pulse duration = 300f,A-s, duty cycle = 1.5%.

For characteristic curves see the BUW 45 type.

704

MULTIEPITAXIAL PLANAR NPN

SWITCHING AND GENERAL PURPOSE
The 2N6702 is a silicon multiepitaxial planar NPN transistor and is niounted in Jedec
TO--220 plastic package.
It is intended for various switching and general purpose applications; ".

ABSOLUTE MAXIMUM RATINGS
V CEV
V CEO

V EBO

Ic
ICM

IB

Ptot
T stg

Tj

Collector-emitter voltage (VBE: =
Collector-emitter voltage (I B
Emitter-base voltate (Ic =
Collector current
Collector peak cur~~pt
Base current}'"
Total power diS~ipatlo~;h'"ase .;;; 25°C)
Storage~~~~fft~re '.
Ju nct\~t\l~pe:f'~~~re<

140
90
7
7
10
5
50
-65 to 150
150

MECHANICAL DATA

V
V
V

A
A
A
W
°C
°C

Dimensions in mm

Collector connected to·tab.

.

2~$

705

::r.''.:

..

-

"

TO-220.

10/82

THERMAL DATA
Rth j-case

Thermal resistance junction-case

max.

°CIW

2.5

ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameter
I CEV

IESO

Test conditions

Min. Typ. Max. Unit

Collector cutoff
current
(V SE =-1.5V)

VCE = 140V
VCE = 140V
at Tease = 125°C

100

JlA

1

mA

Emitter cutoff
current (I C = 0)

VES = 7V

100

JlA
V

90

VCEo(susi Collector-emitter
sustaining voltage
(Is = 0)

Ic = 100mA

VCE(sat) * Collector-emitter
saturation voltage

Ic =5A;
Ic = 7A;

Is = 0.5A
Is=0.7A

0.8
1.5

V
V

VSE(sat) * Base-emitter
saturation voltage

Ic =5A;

Is = 0.5A

1.5

V

hFE *

DC current gain

Ic = 0.2A;
Ic = 5A;

VCE = 2V
VCE = 2V

30
20

hie

Small signal
current gain

Ic = 0.5A;
f = 5MHz

VCE = 10V

4

fT

Transition frequency

Ic = 0.5A;
f = 5MHz

VCE = 10V

20

200 MHz

Ccso

Collector base
capacitance

IE = 0;
f = 100KHz

Vcs = 10V

50

150

IS/b

Second breakdown

VCE = 20V;

t = 100 ms

2.5

td

Delay time

lSi = 0.5A

t,

Rise time

Ic =5A;
Vcc = 70V

ts

Storage time

t,

Fall time

Ic = 5A; lSi = -ls2= 0.5A
Vce = 70V

* Pulsed: pulse duration = 300 Ilsec.; duty cycle < 2%.
706

-

-

40

-

pF
A

0.1

Jls

0.25

Jls

1

JlS

0.5

Jls

DESIGN AND TECHNICAL NOTES APPLICABLE TO POWER DEVICES

DN300 - HORIZONTAL DEFLECTION IN B/W TV SETS USING THE
SGS-ATES DARLINGTONS BU806/7
Horizontal deflection circuits for B/W receivers using the BU806 and BU807 darlingtons
rlriven by the TDA 1180. A short reliability report on the TO-220 plastic package is included.

DN306 - PARALLEL
STORS

CONNECTION

OF

HIGH

VOLTAGE

TRANSI-

Connecting high-voltage transistors in parallel; obtaining good performance and reliable
operation.

DN307 - AUDIO AMPLIFIERS
Audio amplifiers with output powers of 35W, 50W and 75W using complementary power
transistors. Full constructional details are provided.

DN308 - DRIVING
SISTORS

CIRCUITS

FOR

SGS-ATES

SWITCHING

TRAN-

Driving circuits which optimize the switching efficiency of power stages. This consideration is of particular importance when the duty cycle or switching frequency is variable.

DN323 - BUW34 AND BUW44 HIGH VOLTAGE TRANSISTOR APPLICATIONS: 400W AND 600W SWITCH-MODE MAINS
ISOLATED SUPPLIES
The design of two switch-mode regulated supplies: 24V/400W and 24V/600W. Details
of the performance and construction are included.

DN328 - OPTIMUM BASE
WAVEFORM

DRIVE

VERSUS COLLECTOR

CURRENT

Improving the switching behaviour of power devices for both triangular and trapezoidal
collector current waveforms.

DN335 - REVERSE SECONDARY BREAKDOWN
A description of the phenomenon and power transistor ratings for both clamped and unclamped ESIb stresses.

DN336 - DIRECT SECONDARY BREAKDOWN
A description of the ISlb rating in power transistors and how to obtain reliable operation
in repetitive pu Ise conditions.
708

DN337 - COMPLEMENTARY

PAIRS

IN

SWITCHING

APPLICATIONS

The advantages of complementary transistors in circuit design. Includes an application
example: a 720W switch-mode converter in bridge configuration.

TN146 - USING THE L200 ADJUSTABLE VOLTAGE AND CURRENT
REGULATOR
Description and applications of the L200, versatile variable regulator (2.85 to 36V, 2A max.)

TN150 - 40 INDUSTRIAL APPLICATION IDEAS
Industrial applications for linear integrated circuits and power transistors.

All these Design and Technical Notes can be obtained free of charge from the SGS-A TES
sales network.
709

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Information furnished is believed to be accurate and reliable. However, no responsibility is assumed for the consequences of its use nor for
any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of SGS-ATES. Specifications mentioned in this publication are subject to change without notice. This
publication supersedes and substitutes all information previously supplied.

SGS-ATES GROUP OF COMPANIES
Italy - France - Germany - Malta - Malaysia - Singapore - Sweden - United Kingdom - U.S.A.
© SGS-ATES Componenti Elettronici SpA. 1982 - Printed in Italy
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