1983_GI_Monsanto_Optoelectronic_Products 1983 GI Monsanto Optoelectronic Products
User Manual: 1983_GI_Monsanto_Optoelectronic_Products
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Catalog
of OptOelectronic
Products
1983
Optoelectronics Division
3400 Hillview Avenue
Palo Alto, California 94304
Tel: (415) 493-0400
TWX: (910) 373-1767
GENERAL
INSTRUMENT
Copyright © 1982 by General Instrument Corp.
All rights reserved. No part of this book may be
reproduced without the
written permission of GEineral Instrument Corp.
ALL SPECIFICATIONS SUBJECT TO CHANGE.
Printed in USA.
,.
About General Instrument
Optoelectronics
Experience
For the last thirteen years-first as Monsanto and now as General Instrumentwe have been a leading manufacturer of optoelectronic products. As a result
of this experience and our leadership in developing III-V materials technology,
we have contributed many firsts to the field of optoelectronics-in LED lamps,
displays and optoisolators.
Quality Control
Because we are one of the few vertically integrated optoelectronic manufacturers,
we exercise total control over each stage of production-through growing our
own crystals to epitaxial deposition and wafer manufacturing. This ensures
quality and reliability in our products.
Reliable Products
At both our manufacturing plants, in Palo Alto and Kuala Lumpur, extensive
reliability testing and advanced manufacturing techniques ensure the highest
standards of production (see page iii for detailed reliability information). We are
committed to the concept of providing state-of-the-art dependable products at
competitive prices.
Broad Product Range
We offer over 300 high performance optoelectronic devices in five major
categories; optoisolators, emitters/detectors, displays, lamps and chips.
This catalog contains detailed specifications on our complete line of
optoelectronic products.
Product Availability
A worldwide network of stocking distributors assures immediate availability of
most standard products. General Instrument authorized distributors are located
in the United States, Canada, Mexico, South America, Europe, Africa, Japan and
Australia. In addition, six General Instrument Direct Sales Offices in the United
States and eight International Sales Offices serving major world markets,
provide a complete range of all General Instrument Optoelectronic products.
See how to order in the following section.
Efficient Service
If you have a question or a problem just pick up the phone and call the nearest
General Instrument Technical Representative. These highly qualified sales engineers can offer assistance in design and product selection. The list on pages
421 and 424 will enable you to locate one in your area.
In addition, our staff of factory product engineers can provide information,
discuss specific problems and offer applications assistance. The answer to your
question is only a phone call away.
You can depend on General Instrument.
About this Catalog
This catalog describes in detail our complete line of optoelectronic products.
For your convenience, the catalog is divided into five major product groupsoptoisolators, IR emitters and detectors, displays, lamps and chips.
A selection guide will be found at the beginning of each product section.
This provides brief basic information on the product line to assist you in selecting
the device best suited to your requirements.
Full specification sheets are located within each section.
For fast reference, an alpha-numeric listing appears on page vi which lists all
products individually with the appropriate data sheet page number.
A cross-index at the end of the product section lists competitive products by
part number, the manufacturer, and the equivalent General Instrument optoelectronic product. This compatibility guide is invaluable for design engineers.
Application notes starting on page 373, provide useful technical information
to assist you in selecting and testing optoelectronic devices.
How To Order
All General Instrument Optoelectronic products may be ordered through any of
the International Sales Offices and Direct Sales Offices listed on the back cover.
For immediate delivery of General Instrument optoelectronic products, contact
any of the stocking distributors located in your area. See pages 422 and 424.
11
Table of Contents
PAGE
ALPHANUMERIC PRODUCT LISTING.
RELIABILITY RESULTS.
vi
viii
OPTOISOLATORS
SELECTION GUIDE.
4N25, 4N26, 4N27, 4N28
4N29, 4N30, 4N31, 4N32, 4N33
4N35, 4N36, 4N37
6N137
6N138, 6N139
CNY17
CNY65
CNY75A, CNY75B, CNY75C
MCA11G1, MCA11G2
MCA230, MCA255
MCA231
MCL2601
MCP3009, MCP3010, MCP3011
MCP3020, MCP3021, MCP3022
MCS2, MCS2400
MCS21, MCS2401
MCT2
MCT2E
MCT210
MCT2200
MCT2201
MCT2202
MCT26
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
MCT4
MCT4R
MCT6, MCT66
MID400
Phototransistor Optoisolators .
Photo-Darlington Optoisolators .
Phototransistor Optoisolators .
High Speed Isolated Logic Gate
High Gain Split-Darlington
Phototransistor Optoisolator
High-Voltage Optoisolator .
Phototransistor Optoisolators
High Voltage Photodarlington
Photodarlington Optoisolator
Photodarlington Optoisolator ..
High Speed Isolated Logic Gate ..
Optically Isolated Triac Driver.
Optically Isolated Triac Driver.
Photo SCR Optoisolators .
Photo SCR Optoisolators .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator
Phototransistor Optoisolator
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator .
Phototransistor Optoisolator
Dual Phototransistor Optoisolator
AC Line Monitor ..
2
7
11
15
19
25
29
33
37
41
45
49
51
55
59
63
67
71
75
79
83
87
91
95
97
101
105
109
113
117
121
125
129
131
133
137
OPTOSWITCHES, INFRARED EMITTERS, SILICON DETECTORS
SELECTION GUIDE.
BPW39A
CNY36, CNY37
COX47
COY99
MCA7
MCA8, MCA81
MCT8, MCT81
ME7121, ME7124
ME7161
MT1, MT2
MT8020
Visible & Infrared Detector.
Photon Coupled Interrupter Modules .
Infrared Emitter.
Infrared Emitter .
Reflective Object Sensor.
Slotted Optical Limit Switches
Slotted Optical Limit Switches.
High Power Infrared Emitters
Infrared Emitter ..
Silicon Phototransistor Detectors.
Silicon Phototransistor Detector
144
147
151
155
159
163
167
171
175
176
181
183
I
I
I
I
iii
DISPLAYS
SELECTION GUIDE
MANiA, MAN10A
MAN101A, MAN1001A
MAN2A
MAN2815
MAN3400A, MAN3600A,
MAN70A, MAN3800A Series
MAN3480A, MAN3680A,
MAN78A, MAN3880A,
MAN3980A Series
MAN3900A Series
MAN4500A, MAN4600A,
MAN4700A, MAN4800A Series
MAN4580A, MAN4680A,
MAN4780A, MAN4880A,
MAN49BOA Series
MAN4900A Series
MAN6400 Series
MAN6600 Series
MAN6700 Series
MAN6BOO Series
MAN6900 Series
MANB600 Series
MANB800 Series
MANB900 Series
MMN36000, MMN3BOOO,
MMN39000 Series
MMN56000, MMN5BOOO,
MMN59000 Series
XDS Series
.27" Red Seven Segment Displays .
.27" Red Polarity & Overflow Displays
.32" Red Alpha-Numeric Display .
.135" Red 8-Character, 14-Segment
Alpha-numeric Display
.300" Hi-Elf. Green, Orange, Red and
Yellow 7-Segment Displays
.300" High Eft. Green, Orange, Red,
Yellow & Hi-Eft. Red Displays,
.300" Hi-Eft. Red Displays
AOO" Green, Orange, Red and
Yellow 7-Segment Displays.
188
197
199
201
203
207
213
219
223
AOO" Green, Orange, Red, Yellow,
Hi-Eft. Red 7-Segment Displays
AOO" Hi-Eff. Red 7-Segment Displays,
.560"
.560"
.560"
.560"
.560"
.BOO"
Hi-Eff. Green 7-Segment Displays,
Hi Performance Orange Displays
Hi Performance Red Displays
Yellow 7-Segment Displays
Hi-Eft. Red 7-Segment Displays.
Hi-Eft. Red (Orange) 7-Segment
Displays.
.BOO" Yellow 7-Segment Displays
.BOO" Hi-Eft. Red 7-Segment Displays
229
235
239
243
247
251
255
259
263
267
.300" 7-Segment Multidigit Displays .
271
.500" 7-Segment Multidigit Displays
Alphanumeric Display System
275
279
LAMPS
SELECTION GUIDE
NEW High-Efficiency Green Lamps.
MV10B
MV50, MV54
MV52, MV53
MV55A
MV5074C, MV5075C
MV5077C
MV5174C, MV5274C,
MV5374C, MV5774C
MV5177C, MV5277C,
MV5377C, MV5777C
MV51640, MV52640, MV53640,
MV54640, MV57640 Series
MV53620, MV57620 Series
MV50152, MV50154, MV52152,
MV52154, MV53152, MV53154,
MV57152, MV57154
iv
TO-1B Red Solid State Lamp
T-3/4 Red Solid State Lamps .
T-3/4 Green and Yellow Solid State Lamps
T-3/4 Red Solid State Lamp .
T-1 Red Solid State Lamps,
T-1 Red Solid State Lamp
T-1 Orange, Green, Yellow and Hi-Eft. Red
Solid State Lamps
T-1 Orange, Green, Yellow and Hi-Eft. Red
Solid State Lamps
T-1 Orange, Green, Yellow, Hi-Eft. Green and
Hi-Elf. Red Solid State Indicators
T-1 Yellow and Hi-Eft. Red Indicators
T-1 3/4 Red, Green, Yellow and Orange
Solid State Lamps.
296
301
305
307
309
311
313
315
317
319
321
323
325
MV5020 Series
MV5050, MV5051, MV5052,
MV5053, MV5055, MV5056 .
MV5054-1, MV5054-2,
MV5054-3
MV5054A-1, MV5054A-2,
MV5054A-3
MV5094
MV5152, MV5252, MV5352,
MV5752, MV64520, MV64521
MV5153, MV5154, MV5253,
MV5254, MV5353, MV5354,
MV5753, MV5754,
MV64530, MV64531
MV5491
MV53123, MV54123,
MV57123
MV52124, MV53124,
MV54124, MV57124
MV53173, MV54173,
MV57173
MV53164, MV54164
MV57164
MP21, MP22, MP51, MP52
MP65
MP73
T-1 3/4 Red Solid State Lamps .
327
T-1 3/4 Red Solid State Lamps.
329
T-1 3/4 Red Solid State Lamps
333
T-1 3/4 Red Solid State Lamps .
Red Bipolar Solid State Lamp.
Orange, Green, Yellow, Hi-Eff. Red and
Hi-Eff. Green Solid State Lamps ..
335
337
Orange, Green, Yellow, Hi-Eff. Red and
Hi-Eft. Green Solid State Lamps.
Red/Green Tri-State Lamp .
Yellow, Hi-Eft. Green and Hi-Eft. Red
Rectangular Solid State Lamps.
Yellow, Green, Hi-Eft. Green, and Hi-Eff. Red
.220" Rectangular Legend Lamps ..
Yellow, Hi-Eft. Green, and Hi-Eft. Red
.500" Rectangular Indicator Lamps.
Yellow, Hi-Eft. Green and Hi-Eft. Red
10-Segment Bargraphs .
Panel Mounting Grommets
Panel Mounting Grommets for
.220" Rectangular Lamp.
Panel Mounting Grommets for
.500" Rectangular Lamp.
339
341
343
347
349
351
355
360
361
•
1
•
. .
.·<
.
362
LED CHIPS
32M
MMH Series
Green, Yellow and Orange LED Chips
Red Monolithic LED Chips.
365
367
Discrete LED Selecting Made Easier.
The Photometry of LED's.
Improper Testing Methods for LSED Devices.
Optoisolator Input Drive Circuits .
6N139 (MCC671) Low Current
Input Circuit Ideas.
MID400 Power Line Monitor .
373
381
385
389
APPLICATIONS
(AN301)
(AN601)
(AN603)
(AN1071)
(AN1074)
(AN 1075)
APPENDIX
Cross Reference Index.........................................................................
North American Technical Representatives ..............................................
North American Stocking Distributors................................................... ...
International Stocking Distributors & Technical Representatives...................
395
399
413
421
422
424
•
I
v
Alpha-Numeric Product Listing
Product No.
4N25
4N26
4N27
4N28
4N29
VI
Page
7
7
7
7
11
Product No.
MAN4605A
MAN4610A
MAN4630A
MAN4640A
MAN4680A
Page
223
223
223
223
229
Product No.
MAN8650
MAN8810
MAN8830
MAN8840
MAN8850
Page
259
263
263
263
263
4N30
4N31
4N32
4N33
4N35
11
11
11
11
15
MAN4705A
MAN4710A
MAN4740A
MAN4780A
MAN4805A
223
223
223
229
223
MAN8910
MAN8930
MAN8940
MAN8950
MCA11G1
267
267
267
267
41
4N36
4N37
6N137
6N138 (MCC670)
6N139 (MCC671)
15
15
19
25
25
MAN4810A
MAN4840A
MAN4880A
MAN4905A
MAN4910A
223
223
229
235
235
MCA11G2
MCA230
MCA231
MCA255
MCA7
41
45
49
45
163
BPW39A
CNY17
CNY36
CNY37
CNY65
147
29
151
151
33
MAN4940A
MAN4980A
MAN6410
MAN6430
MAN6440
235
239
239
239
MCA8
MCA81
MCA670 (6N138)
MCA671 (6N139)
MCL2601
167
167
25
25
51
CNY75A
CNY75B
CNY75C
CQX47
CQX99
37
37
37
155
159
MAN6450
MAN6460
MAN6480
MAN6610
MAN6630
239
239
239
243
243
MCP3009
MCP3010
MCP3011
MCP3020
MCP3021
55
55
55
59
59
MAN1A
MAN10A
MAN1001A
MAN101A
MAN2A
197
197
199
199
201
MAN6640
MAN6650
MAN6660
MAN6680
MAN6710
243
243
243
243
247
MCP3022
MCS2
MCS21
MCS2400
MCS2401
59
63
67
63
67
MAN2815
MAN3410A
MAN3420A
MAN3430A
MAN3440A
203
207
207
207
207
MAN6730
MAN6740
MAN6750
MAN6760
MAN6780
247
247
247
247
247
MCT2
MCT2E
MCT210
MCT2200
MCT2201
71
75
79
83
87
MAN3480A
MAN3610A
MAN3620A
MAN3630A
MAN3640A
213
207
207
207
207
MAN6810
MAN6830
MAN6840
MAN6850
MAN6860
251
251
251
251
251
MCT2202
MCT26
MCT270
MCT271
MCT272
91
95
97
101
105
MAN3680A
MAN3810A
MAN3820A
MAN3830A
MAN3840A
213
207
207
207
207
MAN6880
MAN6910
MAN6930
MAN6940
MAN6950
251
255
255
255
255
MCT273
MCT274
MCT275
MCT276
MCT277
109
113
117
121
125
MAN3880A
MAN3910A
MAN3920A
MAN3930A
MAN3940A
213
219
219
219
219
MAN6960
MAN6980
MAN71A
MAN72A
MAN73A
255
255
207
207
207
MCT4
MCT4R
MCT6
MCT66
MCT8
129
131
133
133
171
MAN3980A
MAN4505A
MAN4510A
MAN4540A
MAN4580A
219
223
223
223
229
MAN74A
MAN78A
MAN8610
MAN8630
MAN8640
207
213
259
259
259
MCT81
ME7121
ME7124
ME7161
MID400
171
175
175
176
137
229/235
Product No.
MMN36220
MMN36240
MMN36420
MMN36440
MMN38220
Page
271
271
271
271
271
Product No.
MV5051
MV5052
MV5053
MV5054-1
MV5054-2
MMN38240
MMN38420
MMN38440
MMN39220
MMN39240
271
271
271
271
271
MV5054-3
MV5054A-1
MV5054A-2
MV5054A-3
MV5055
333
335
335
335
329
MV53642
MV5374C
MV5377C
MV54
MV54123
MMN39420
MMN39440
MMN56120
MMN56240
MMN56320
271
271
275
275
275
MV5056
MV5074C
MV5075C
MV5077C
MV5094
329
311
311
315
337
MV54124
MV54164
MV54173
MV54643
MV54644
301/321
301/321
MMN56440
MMN58120
MMN58240
MMN58320
MMN58440
275
275
275
275
275
MV5152
MV5153
MV5154
MV51640
MV51641
339
341
341
321
321
MV5491
MV55A
MV57123
MV57124
MV57152
343
311
347
349
325
MMN59120
MMN59240
MMN59320
MMN59440
MP21
275
275
275
275
360
MV51642
MV5174C
MV5177C
MV52
MV52124
321
317
319
309
349
MV57154
MV57164
MV57173
MV5752
MV5753
325
355
351
339
341
MP22
MP51
MP52
MP65
MP73
360
360
360
361
362
MV52152
MV52154
MV5252
MV5253
MV5254
325
325
339
341
341
MV5754
MV57620
MV57621
MV57622
MV57640
341
323
323
323
321
MT1
MT2
MT8020
MV10B
MV50
181
182
183
305
307
MV52640
MV52641
MV52642
MV5274C
MV5277C
321
321
321
317
319
MV57641
MV57642
MV5774C
MV5777C
MV64520
321
321
317
319
MV50152
MV50154
MV5020
MV5021
MV5022
325
325
327
327
327
MV53
MV53123
MV53124
MV53152
MV53154
309
347
349
325
325
MV64521
MV64530
MV64531
XDS2724P
XDS2724S
301/339
301/341
301/341
MV5023
MV5024
MV5025
MV5026
MV5050
327
327
327
327
329
MV53164
MV53173
MV5352
MV5353
MV5354
355
351
339
341
341
XDS2732P
XDS2732S
279
279
Page
329
329
329
333
333
Product No.
MV53620
MV53621
MV53622
MV53640
MV53641
Page
323
323
323
321
321
321
317
319
307
301/347
301/349
355
351
301/339
279
279
vii
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n
At General Instrument, product dependability is assured through
an active reliability program which includes:
New Product
Qualification
All new products evolve through
an orderly design-to-manufacture flow.
At each stage reliability engineering
is present to ensure that the defined
reliability requirements' are met.
The reliability plan is implemented in the development stage
where actual testing begins. Stress
tests are performed to show potential problem areas and the reliability
of the new product is compared
directly with that of a previously
qualified product of a similar type.
During limited production, where
components must meet defined
reliability goals, samples from a
minimum of three lots are taken for
extensive testing. These samples
must meet or exceed defined goals
in order for the product to be considered qualified and transferred
to the reliability monitoring program.
Reliability monitoring consists
of the following tests:
• D.C. Operating Life
TA = 25°C
time = 1000 hours
IF = max. rated
• High Temperature Storage
TA = 150°C
time = 1000 hr.
• Low Temperature Storage
TA = -55°C
time = 1000 hr.
• 85/85 No Bias
TA = 85°C
RH = 85%
time = 1000 hrs.
.HTRB
•
•
Quality Control
Quality control is considered a
vital function at General Instrument.
To minimize variations in the product
and to maintain quality and hence
reliability, the following in-process
control activities are routinely
performed:
• Incoming Inspection of all piece
parts and raw materials.
• Die-attach process control gate.
• Wire-bond control gate.
• Encapsulation control gate.
• Equipment monitors.
• Final QA gate of all lots.
• Finished goods stores monitor.
• Frequent process line audits for
conformance to specification.
Monitor Program
To ensure that qualified products
continue to meet reliability targets,
a monitor program tests generic
device families on a periodic basis
and provides information for the
reliability data bank.
viii
•
•
•
TA = 100°C
voltage = 80% max. rated
time = 1000 hrs.
Thermal Shock per
MIL-STD-883, Method 1011
TA = O°C to 100°C
No.' of cycles = 30
Temperature Cycle per
MIL-STD-883, Method 1010
TA = -55°C to 125°C
No. of cycles = 100
Ther.mal Intermittent Test
TA = 25°C to 100°C
No. of cycles = 10
Moisture Resistance
per MIL-STD-833
Method 1004
(omit initial conditioning
and Step 7)
Pressure Pot
pressure = 15PSI
time = 96 hours
Reliability Test Facilities
Both in Palo Alto and Kuala
Lumpur (Malaysia), test facilities are
equipped with:
• Automated Testing
• Life test equipmentHi and Lo Temp.
• Temperature/humidity chambers
• Hi Temp. ovens
• T/S and T/C equipment
In addition, the failure analysis
lab facilities in Palo Alto and Kuala
Lumpur also have the following
capabilities:
• Electrical testing and verification
• Pin to pin measurements
• Package dissection and crosssectioning
• Chemical and plasma etching
• Optical photomicroscopy
• Micromanipulators
• Access to scanning electron
microscope with X-ray
spectrometry
• Access to Auger analysis
Failure Analysis and
Qualitative Reliability
When a reliability failure does
occur, a detailed analysis is performed to provide data for corrective
action as well as guidelines for the
design of future new products.
This on-going activity and the
resulting feedback and action is illustrated in the accompanying diagram.
Optoisolators
OPTOISOLATORS
DETECTOR
PACKAGE
OUTPUT CONFIGURATION
MAX.
EMITTER
VOLTAGE
MIN.
OUTPUT
VOLTAGE
IBVCEO)
TYPICAL
hFE
MAX.
VCEISAT)
MIN.
CURRENT
TRANSFER
RATIO
CNY65
TRANSISTOR
1.6V@5o.mA
32V
-
.3V@lmA
50.·30.0.%
CNY17A
CNY17B
CNY17C
CNY17D
TRANSISTOR
1.65V@6CmA
7CV
-
.3V@2.5mA
40.-80.%
63·125%
10.0.·20.0.%
160.·320.%
CNY75A
CNY75B
CNY75C
TRANSISTOR
1.6V@5o.mA
7CV
-
MCT22o.C
MCT22Cl
MCT22C2
TRANSISTOR
1.5V@2o.mA
3CV
-
.3V@2.5mA
20.%
10.0.%
60.·125%
MCT2
MCT2E
MCT26
TRANSISTOR
1.5V@2o.mA
3CV
250.
250.
150.
.4V@2mA
.4V@2mA
.5V@1.6mA
20.%
20.%
6%
MCT21C
TRANSISTOR
1.5V@4CmA
3CV
40.0.
.4V@16mA
150.%
MCT27C
MCT271
MCT272
MCT273
MCT274
TRANSISTOR
1.5V@2o.mA
3CV
50.0.
420.
50.0.
280.
360.
.4V@2mA
50.%
45·90.%
75·150.%
125·250.%
225·40.0.%
MCT275
TRANSISTOR
1.5V@2CmA
8CV
170.
.4V@2mA
70.·210.%
MCT276
MCT277
TRANSISTOR
1.5V@2CmA
3CV
90.
420.
.4V@2mA
15-60.%
lCC%·up
4N2!r
4N26
4N27
4N28
TRANSISTOR
1.5V@5CmA
3CV
250.
.5V@2mA
20.%
20.%
10.%
10.%
4N35
4N36
4N37
TRANSISTOR
1.5V@lCmA
3CV
10.0.
.3V@5mA
10.0.%
MCT6
MCT66
TRANSISTOR PAIR
1.5V@2CmA
3CV
-
.4V@2mA
20.%
6%
MCT4
MCT4R
TRANSISTOR
1.5V@4CmA
3CV
-
.5V@2mA
15%
MCA23C
MCA231
MCA255
DARLINGTON TRANSISTOR
1.5V@2CmA
3CV
3CV
55V
25,0.0.0.
50.,0.0.0.
25,0.0.0.
1.CV@5o.mA
1.2V@5CmA
1.CV@5CmA
10.0.%
20.0.%
10.0.%
. DARliNGTON TRANSISTOR
1.5V@5CmA
3CV
50.0.0.
1.CV@2mA
1.CV@2mA
1.2V@2mA
1.CV@2mA
1.CV@2rriA
10.0.%
10.0.%
50.%
50.0.%
50.0.%
HIGH VOLTAGE
DARLINGTON TRANSISTOR
1.5V@6CmA
lCCV
8CV
-
1.CV@5CmA
10.0.0.%
1.7V@1.6mA
7V
18V
DEVICE
NO.
TRANSISTORS
~
@
~
~
.3V@2.5mA
63·123%
10.0.·20.0.%
160.·320.%
DARLINGTONS
~
4N29
4N3C
4N31
4N32
4N33
MCAllGl
MCAllG2
~
6N138
(MCC67C)
6N139
(MCC671)
SPLlT·DAR LINGTON
NOTE 1: Underwriter's Laboratory recognized product File E5C151.
2
-
O.4V@ If" 1.BmA,
lo=4.8mA
Vee = 4.5V
O.4V@ If '" SmA,
lo-15mA
Vee" 4.SV
30.0.%
40.0.%
MIN.
STEADY STATE
ISOLATION
VOLTAGE
TYPICAL
OPERATING
SPEED OR
BANDWIDTH
PAGE
NO.
5"sec
33
5"sec
29
5"sec
37
Telephone circuits, industrial control systems, power supply
regulators, appliance sensor systems, microprocessor controls.
7500VDC @'
10"sec
83
87
91
Power supply regulators, digital logic inputs, microprocessor
inputs, appliance sensor systems, industrial controls.
2500VAC@'
150KHz
150KHz
300KHz
71
75
95
AC line/digitallogic isolator, logic isolator, line receiver,
cable receiver, relay monitor, power supply monitor.
2500VAC@'
150KHz
79
~~~~I~~~~i;:~~a~i~~, i~~~~~~iver .feedback control, moni·
2500VAC@'
10"sec
7"sec
10"sec
20"sec
25"sec
97
101
105
109
113
Switching networks, power supply regulators, digital logic
inputs, microcircuit inputs, appliance sensor systems, appliance controls.
25tJuv"C@
7"sec
11600VDCIVDE@'
APPLICATIONS
VDE Approved, high isolation voltage for medical instrumentation,
industrial controls, solid state relays, power supply monitor, AC
line to digital logic isolation.
Power supply regulators, digital logic inputs, microprocessor
7500VDC@'
5300VDCIVDE@'
inputs, appliance sensor systems, power supply regulators,
industrial controls.
driver, 'AIAn'~~~,"u"" high voltage industrial control, relay
I
3.5"sec
15"sec
121
125
Data processing, microprocessor input, high speed digital logic.
300KHz
7
Low cost products for logic isolator, telecommunications,
line/cable receiver, high frequency feedback & control system,
monitoring circuits.
150KHz
15
Low current, low power products for industrial control and
consumer, monitoring circuits, line receiver.
3000VDC@'
150KHz
133
Data line isolation, telephone signal coupling, line/cable
receiver, mobile equipment.
1000VDC
300KHz
129
131
Logic isolation. line or cable receiver for high hermeticity.
MCT4R-M I L-STD._8838 preconditioning.
2500VAC@'
10KHz
45
49
45
High current, low capacitance and fast switching products
for read relay, pulse transformer, multiple contact control
applications. Telecommunication. remote control logic isolation & alarm monitoring circuits, AC line/logic coupling.
2500VAC@'
30KHz
11
Low capacitance medium speed products for data isolation,
logic conversion, line/cable receiver. monitoring circuits or
mechanical feedback controls.
2500VAC@'
100"sec
41
High breakdown voltage with high current transfer ratio used in
telecommunications, pulse transformer and other logic isolation.
3000VDC@'
tpHL @ 10"sec
tpLH @ 35"sec
t pHL @ l"sec
tpLH @ 7"sec
25
CMOS logiC interface, telephone ring detector, low input
TTL interface, power supply isolation.
2500VAC@'
,
2500VAC@'
3
OPTOISOLATORS
DETECTOR
PACKAGE
HOLDING
CURRENT,
(MAX.)
.-
OUTPUT CONFIGURATION
MAX.
EMITTER
VOLTAGE
VGT
(MAX.)
ON·VOLTAGE
(MAX.)
MCS2
MCS2400
SCR
. 1.5V @l 20mA
1V
1.3V@l100mA
.5mA
14mA
MCS2l
MCS2401
SCR
1.5V@l20mA
lV
1.3V @l 300mA
.5mA
llmA
OUTPUT CONFIGURATION
MAX.
. EMITTER
VOLTAGE
DEVICE
NO.
1FT
(MAX.)
SCR's
6ijfJ
PACKAGE
DEVIC.E
NO.
DETECTOR
(TYP.)
IOHL
(MAX.)
VOL
(MAX.)
ICC
(TYP.)
1.75V@l10mA
3mA
250llA
.SV@l13mA
15mA
MAX.
EMITTER
VOLTAGE
ON-STATE
RMS INPUT
CUR. (MIN.)
OFF·STATE
RMS INPUT
CUR. (MAX.)
VOL
(MAX.)
IOH
(MAX.)
1.5V=30mA
4.0mA
.15mA
0.4%
100llA
OUTPUT CONFIGURATION
MAX.
EMITTER
VOLTAGE
MAX.
ON·STATE
VOLTAGE
PEAK
BL_OCKING
VOLTAGE
TYPICAL
STATIC dv/dt
HOLDING
CURRENT
(TYP.)
MCP3009
MCP3010
MCP30ll
TRIAC
1.5V@lSOmA
3.0V@l100mA
250V
10V/llsec
200llA
MCP3020
MCP3021
MCP3022
TRIAC
1.5V@lSOmA
3.0V@l100mA
400V
l5V/llsec
200llA
tolf
HIGH SPEED LOGIC GATE
~
MCL2601
SN137
OPEN-COLLECTOR
LOGIC GATE
DETECTOR
PACKAGE
DEVICE
NO.
OUTPUT CONFIGURATION
AC LINE MONITOR
~
PACKAGE
MID400
DEVICE
NO.
OPEN-COLLECTOR
LOGIC GATE
TRIAC DRIVERS
~
NOTE 1: Underwriter's Laboratory recognized product file E50151.
4
BLOCKING
VOLTAGE
MIN.
STEADY STATE
ISOLATION
VOLTAGE
PAGE
NO.
Lower power IC's to AC line isolation, relay functions, latches
200V
400V
2500VAC@'
63
200V
400V
2500VAC@'
67
MIN. TRANSIENT
IMMUNITY
CM
-1000V/"sac
-150V/"sec
MIN.
STEADY STATE
ISOLATION
VOLTAGE
APPLICATIONS
MIN.
STEADY STATE
ISOLATION
VOLTAGE
for DC circuits. home appliances, consumer and industrial
control
Complete power isolation for integrated circuits and AC line
voltage. High speed switching of relay functions.
OPERATING
FREQUENCY
(TYP.I
PAGE
NO.
10Mbits
51
19
3000V@'
SWITCHING
TIMES
TON. TOFF (TYP.I
PAGE
NO.
1.0mS
137
MIN.
STEADY STATE
ISOLATION
VOLTAGE
PAGE
NO.
APPLICATIONS
Isolated line receiver, data transmission isolation, microprocessor
system interface, pulse transformer replacement.
APPLICATIONS
Monitors AC "line-down" conditions; "closed loop" inter-
3550V@'
TRIGGER
CURRENT
(MAX.IFTI
30mA
15mA
10mA
7500VAC@'
5f!
30mA
15mA
10mA
7500VAC@'
59
face between electromechanical elements and microprocessors.
Time delay isolation switch.
APPLICATIONS
Interface between electronic controls and power triacs to
control resistive and inductive leads for 120VAC or 240VAC
operations. Specific applications are used as triac driver,
traffic light control. motor control and solid state relays.
5
6
PHOTOTRANSISTOR OPTOISOLATORS
I
4N25 4N27
4N26 4N28
PACKAGE DIMENSIONS
DESCRIPTION
r:] -
I
L~:::;::::::r::;:
The 4N25, 4N26, 4N27, and 4N28 series of
optoisolators have an NPN silicon planar
phototransistor optically coupled to a
gallium arsenide diode. Each is mounted in
a six·lead plastic DIP package.
-=
fJ
0
1
....
FEATURES & APPLICATIONS
•
•
•
•
•
-=-L-
C1339
SYMBOL
A
B
SEATING
PLANE
C
0
E
F
G
H
J
K
L
M
N
INCHES
MAX.
.365
.270
.160
15°
mm
MAX .
9.27
6.86
4.06
15°
.300 Ref. 7.62 Ref.
,014
0,36
.325
8.26
.070
1.78
.110
2.79
.022
0.56
.085
2.16
.175
NOTES
1
2
3
4
5
4.45
p
•
•
•
•
•
•
•
•
AC line/digital logic isolator
Digital logic/digital logic isolator
Telephone/telegraph line receiver
Twisted pair line receiver
High frequency power supply feedback
control
Relay contact monitor
Power supply monitor
Small package size and low cost
High isolation voltage
Excellent frequency response
UL recognized - File E50151
High isolation voltage
VISO = 2500 V RMS - 1 minute
VDE approval applied for
NOTES
ANODE~.
CATHODE
" INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVERALL INSTALLED POSITION
BASE
4. THESE MEASUREMENTS ARE MADE FROM
2
5
COLLECTOR
THE SEATING PLANE
5. MINIMUM 0.100 INCH
3
4
EMITTER
ABSOLUTE MAXIMUM RATINGS
*Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _55°C to 150°C
*Operating temperature at junction . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _55°C to 100° C
*Lead temperature (soldering, 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 260°C
*Total package power dissipation at 25°C ambient (LED plus detector) . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
*Derate linearly from 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3 mwtC
Input diode
*Forward DC current continuous . . . . . . . . . 80 mA
*Reverse voltage . . . . . . . . . . . . . . . . . . . . . 3.0 V
*Peak forward current
(300 MS, 2% duty cycle) . . . . . . . . . . . . . . 3.0 A
*Power dissipation at 25°C ambient...... 150 mW
*Derate linearly from 25°C ....... : . 2.0 mWtC
Output transistor
*Coliector emitter voltage (BVCEO ) ........ 30 V
*Collector base voltage (BVCBO ) . . . . . . . . . . 70 V .
*Emitter collector voltage (BVECO ) . . . . . . . . . 7 V
*Power dissipation at 25°C ambient...... 150 mW
*Derate linearly from 25°C. . . . . . . . . . 2.0 mWtC
*1 ndicates JEDEC Registered Data.
7
4N25 4N26 4N27 4N28
ELECTRO-OPTICAL CHARACTERISTICS
CHARACTERISTI,CS
(25°C Free Air Temperatl,lre Unless Otherwise S~eCified)
SYMBOL
Inpl,It diode
*Forward voltage
Capacitance
*Reverse leakage current
Output transistor
DC forward current gain
*Collector to emitter
break~own voltage
*Collector to base
breakdown voltage
*Emitter to collector
breakdown voltage
*C'ollector to emitter leakage
current (4N25, 4N26, 4N27)
*Collector to emitter leakage
current (4N28)
*Collector to base
leakage current
Coupled
*Collector output current (a)
(4N25,4N26)
(4N27,4N28)
MIN.
VF
C
1.20
150
.05
GUAR.
MAX.
UNITS
1.50
V
pF
100
"A
250
hFE
TEST
CONDITIONS
IF = 10 mA
V R = 0 V, f = 1 MHz
V R = 3.0 V, RL = 1.0 Mn
VCE = 5 V, Ic = 500 "A
BVCEO
30
65
V
Ic = 1.0 mA, Ie = 0
BVceo
70
165
V
Ic = 100 "A, IE = 0
BVECO
7
14
3.5
ICEO
0.1
Iceo
Isolation voltage (b)
(4N25,4N26, 4N27, 4N28)
*(4N25)
*(4N26,4N27)
*(4N28)
Isolation resistance (b)
*Collector-em itter saturation
Isolation capacitance (b)
Bandwidth (c)
(also see note 2)
TYP.
Ic
2.0
1.0
V ,SO
2500
2500
1500
500
Bw
IE = 100 "A, Ie = 0
nA
VCE = 10 V Base Open
100
nA
20
nA
Vce = 10 V Emitter Open
mA
VCE = 10V, IF= lOmA, Ie =0
V
V
V
V
RMS, t = 1 minute
Peak
Peak
Peak
V = 500 VDC
Ic = 2.0 mA, IF = 50 mA
V = 0, f = 1.0 MHz
Ic = 2.0 mA, RL = 100 n
(Figure 13)
5.0
3.0
1011
0.2
1.3
300
VcE(SAT)
V
50
n
0.5
V
pF
kHz
*1 ndicates JEDEC Registered Data.
(a) Pulse Test: Pulse Width = 300 /.Is, Duty Cycle';;; 2.0%
(b) For this test LED pins land 2 are common and Phototransistor pins 4,5 and 6 are common.
(c) If adjusted to yield Ic = 2 mA and it = 0.7. mA RMS; Bandwidth referenced to 10 kHz.
SWITCHING TIMES
Non-saturated
Collector
Delay time
Rise time
Fall time
Non-saturated
Collector
Delay time
Rise time
Fall time
Saturated
ton (from 5 V to 0.8 V)
tOff (from SAT to 2.0 V)
Saturated
ton (from 5 V to 0.8 V)
toff (from SAT to 2.0 V)
Non-saturated
Base - Collector photo diode
Rise time
Fall time
8
TYP.
UNITS
TEST CONDITIONS
td
tr
tf
0.5
2.5
2.6
/ls
/ls
/ls
RL = 100 n, Ic'= 2 mA, Vcc = 10 V
(Fig. 7 and 13)
td
tr
tf
2.0
15
15
/ls
RL = 1kn, Ie 2 mA, Vcc = 10 V
(Fig; 7 and 13)
ton (SAT)
toll (SAT)
5
25
ton (SAT)
toll (SAT)
5
18
/ls
tr
tf
175
175
ns
r'lS
/ls
J.fs
/ls
/ls
/ls
RL = 2kn, IF = 15 mA, Vcc = 5 V
Re = Open (Circuit NO.1)
RL = 2kn, 'F = 20 mA, Vcc = 5 V
Re = 100kn (Circuit No.1)
RL = 1kn, Vce = 10 V
4N25 4N26 4N27 4N28
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES
(25°C Free Air Temperature Unless Otherwise Specified)
40
"E
I
~
I-
~a:
"ua:
0
~
I
30
I
25
=
'/
0
IF =
-'
V
y
10
15
20
25
~
i" mi
(-- IF
30
35
.,
'1=
o
u
Cll11
=
70V"
Fig. 2. Collector Current vs.
25V
h·t~
/.~ ~V
~~ V
,
10 20 30 40 SO 600809000
7
TA - TEMPERATURE -
C1113
e11'2
Fig. 3. Dark Current vs. Temperature
........
1.8
<1. ,
r---.
I'::-
./
90
/
70
""
.§.
z
rr', ~5
1
3<1-
-'-
;,-
2
40
20
4
20
1
a:
aa:
u
IF" lOrnA'
~
~
80
o.
,
•
100
. 'I'
;::
""
10K
IK
~ '1""'~ •
lOOK
0.1
I I
RL·470n
.......
-'
RI...'O~
I I IL
G.20.3OA 0.&0.81.0
2
34567810
C1116
Fig. 6. Switching Time vs.
Collector Current
(see Fig. 13 for Circuit)
Fig. 5. Collector Current vs. Frequency
(see Fig. 12 for circuit)
Temperature
.I,o~n
T
COLLECTOR CURRENT Ie (mA)
CIIIS
Fig. 4. Current Transfer Ratio vs.
L
2
FREQUENCV (Hz)
C1114
R
0
"z .......,
1\
\
o. 2
I I
:;,
\\
AMBIENT TEMPERATURE (OCI
.
v(" = 10 VOLTS
~
I!.
1. 0
8 o.
f-CTR=1;-60
.
~~~- ~
eO. •
1
Vee = IOV
40
VeE -IOVOLTS
1.4
~ 1. 2
LOW CURRENT TRANSFER RATIO
soiL-
111111111
I-
::,...
I I II
I I II
I
1\ I
_\1>
111111111
HIGH CURRENT TRANSFER RATIO
'0
~c
Forward Current
2.0
r--.....
60
rYeE
·
FORWARD CURRENT flFl- rnA
Fig. 1. Collector Current vs.
Collector Voltage
'0
=
'0'
-20 -10 0
.01 L-.l...J..Ll.JJ.WL-J,..J....u..wu_L.J..1J..I.WJ
,1
.5 1.0
5.0 10.0
50.0
40
VeE
yc<=5~V
COLLECTOR VOLTAGE tV)- VOLTS
30
V~ ~~
,
~
aa:
om,- -
I
,/
~ 10.0
/
u
"
E
I-
/
'5
10
'D'
IF " 40 mA
/
V
20
·.,
J
V bo ml
/ ' IF
35
Vec
RL
IF
~
~
)
tv.
.,
Vo.,
OV
OV
~
V OUT
t.t
e1117
C1UO
Circuit 1
Fig. 7. Pulse Test Definition
(Note 3)
9
4N25 4N26 4N27 4N28
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (Cont'd)
(25°C Free Air Temperature Unless Otherwise Specified)
1
1.
8
~ 1.
II
\
\
\
"'-
2
J:e>
CTA= 20%
T
/
~
CTT~
~
to IV
~
TA"
I
./
~ 1. 0
"'(soc
-> 'V
1
B
.1
10
.2
.5
Ie - COLLECTOR CURRENT {mAl
GillS
.1
Fig. 8. Saturation Voltage vs.
Collector Current
" 100
~80
~
~
6
I 50
.2
.5
z
o
>=
~
+100~
"~~
./
I
~
~
'. ~;,f,
1
5 10 20
SO 100
IF - FORWARD CURRENT - rnA
Cl119
1000
100
Forward Current
3U
I
I- - I - '
I- ~
8
25,uA
20,uA -
2
r
15_t
1
-r-r-
10,uA
, ,
Vee - IOV
4
liill1
l00!<
ABE - BASE RESISTANCE
18 =0
0
1M
-.n
"
16
20
Vc.volts
C1121
Fig. 11. Sensitivity vs.. Base Resistance
~
18 =5,uA
50C
0
10K
100,000
C1120
Fig. 10. Lifetime vs.
6
V
I
10,000
TIME· HOURS
20
,;'=\Jl~
/
20
'F _3mA
o
1
i
IF'" tOxic
fA
1. 3
5 t.2
"
=
vs.
T1E'iifllilTUr
;!
/
FORWARD VOLTAGE
FORWARD CURRENT IVF vs.
4rV5.
o
6
.J_~.
5
24
C1122
Fig. 12. Detector hfe Curves
OPERATING SCHEMATICS
~~~¥LATION
H
I~F
J.-J\J\JC....a
CONSTANT
CURRENT
INPUT
-
Vee = lQVOlTS
PULSE
INPUT
4711
~~-
-_OUTPUT
L----<....
--=--u~
-
I,
Vee· 10 VOLTS
DETECTOR
-
PULSE
OUTPUT
I,
'c
(DC) ~2 mA
ic = 0.7. mA RMS
C1124
C1123
Fig. 13. Modulation Circuit Used to Obtain
Output vs. Frequency Plot
Fig. 14. Circuit Used to Obtain Switching
Time vs. Collector Current Plot
NOTES
1.
10
The current transfer ratio (lC/IF) is the ratio of the detector collector current to the LED inpilt current with
VCE at 10 volts.
2.
The frequency at which ic is 3dB down from the 10 kHz value.
3.
Rise time (tr ) is the time required for the collector current to increase from 10% of its final value to 90%.
Fall time (ttl is the time required for the collector current to decrease from 90% of its initial value to 10%.
PHOTODARLINGTON OPTOISOLATORS
4N31
4N29 4N32
4N30 4N33
PACKAGE DIMENSIONS
DESCRIPTION
-=
~
r
The 4N29, 4N30, 4N31, 4N32 and 4N33
have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington. Each unit is sealed in a 6-lead
plastic DIP package.
D
J
FEATURES & APPLICATIONS
E
•
•
•
1
...... --1-
-..., ,.-
II
SYMBOL
A
.8
SEATING
PLANE
C
D
E
G
H
J
K
M
N
INCHES
mm
MAX.
MAX.
NOTES
9.27
.365
.270
6.86
.160
4.06
15'
15'
.300 Ref. 7.62 Ref.
.014
0.36
.325
8.26
,,070
1.78
.110
.022
.085
2.79
0.56
2.16
.175
4.45
•
•
•
•
•
Fast operate time - 10 /.IS
High isolation resistance - 10" Q
High dielectric strength, input to output
2500 V RMS - 1 minute
Low coupling capacitance - 1.0 pF
Convenient package - plastic dual-in-line
Long lifetime, solid state reliability
Low weight - 0.4 grams
UL recognized - File E50151
VDE approval applied for
P
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3, OVERALL INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
5. MINIMUM 0.100 INCH
ABSOLUTE MAXIMUM RATINGS T A
=
25°C (Unless otherwise specified)
*Storage Temperature . . . . . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . . . . .' ...... _ : ........• _55°C to 150°C
*Operating Temperature at Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 100°C
*Lead Soldering time @ 260°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 seconds
.*Total power dissipation @ 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
*Derate linearly from 25°C . . . . . . . . . . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3 mWrC
LED (GaAs Diode)
*Power dissipation @ 25°C ambient . . . . . . . . . 150 mW
*Derate linearly from 55°C . . . . . . . . . . . . . 2 mWtC
*Continuous forward current . . . . . . . . . . . . . . 80 mA
Reverse current . . . . . . . . . . . . . . . . . . . . . . . 10 mA
*Peak forward current (300 /.Isec, 2% duty cycle) .. 3.0 A
DETECTOR (Silicon Photo. Darlington Transistor)
*Power dissipation @ 25°C ambient . . . . . . . . . 150 mW
*Derate linearly from 25°C .... _ . . . . . . . 2_0 mWtC
*Collector-em itter breakdown voltage (BVCEO ) •.•. 30 V
*Collector-base breakdown voltage (BVCBO ) . • . . . • 50 V
Emitter-base breakdown voltage (BVEBO ) . . . . . • • 8.0 V
*Emitter-collector breakdown voltage (BVECO ) ••.•.. 5 V
* Indicated JEDEC Registered data.
11
I
4N29 4N30 4N31 4N32 4N33
ELECTRO-OPTICAL CHARACTERISTICS
CHARACTERISTIC
(25 9 CFreeAir Temperature Unless Otherwise Specified)
SYMBOL
LED-CHARACTERISTICS
(TA = 25°C unless o-therwise noted)
-*Reverseleakage current
*Forward voltage
Capacitance
MIN.
IR
VF
C
TYP.
MAX.
UNIT
0.05
1.2
150
100
1.5
JlA
Volts
pF
100
nA
Volts
Volts
Volts
TEST CONDITION
-VR = 3.0V
IF = 10 mA
VR =OV, f = 1.0 MHz
PHOTOTRANSISTOR CHARACTERISTICS
(TA = 25°C and IF =0 unless otherwise noted)
*Collector-emitter dark current
*Collector-base breakdown voltage
*Collector-emitter breakdown voltage
*Emitter-collector breakdown voltage
DC current gain
ICEO
BVceo
BVCEO
BVECO
hFE
30
30
5.0
5000
VCE = 10 V, base open
Ic = 100M, IE = 0
Ie = 100JlA, Ie = 0
IE = 100 JlA, Ie = 0
VCE = 5.0 V, Ic = 500 JlA
COUPLED CHARACTERISTICS
(TA = 25°C unless otherwise noted)
*Collector output current (Note 1)
4N32,4N33
4N29,4N30
4N31
Isolation voltage (Note 2)
4N29,4N30,4N31,4N32,4N33
*(4N29,4N32)
*(4N30, 4N31, 4N33)
Isolation capacitance (Note 2)
*Collector,emitter saturation voltage (1)4N31
4N29,4N30,4N32,4N33
I solation capacitance. (Note 2)
Bandwidth (3) (Test Circuit # 1)
= 10 V, IF = 10 mA, Ie = 0
= 10 V, IF = 10 mA, Ie = 0
= 10 V, IF = 10 mA, Ie = 0
Ic
50
10
5.0
mA
mA
mA
V,SO
2500
2500
1500
V
V
V
Ohms
V RMS, t = 1 minute
VDC
VDC
V = 500 VDC
Volts
Volts
pF
kHz
Ic = 2.0 mA, IF = 8.0 mA
Ic = 2.0 mA, IF = 8.0 mA
V = 0, f = 1.0 MHz
1011
R,so
VCE(SAT)
1.2
1.0
0.8
30
VCE
VCE
VCE
SWITCHING CHARACTERISTICS
(Test Circuit #2)
Turn-on time
tON
0.6
5.0
Jls
Ic = 50 mA, IF
Vcc = 10 V
= 200 mA,
Turn-off time
4N29, 4N30, 4N31
4N32,4N33
tOFF
17
45
40
100
Jls
Ic = 50 rnA, IF
Vcc = 10 V
= 200 rnA,
*Indicates JEDEC Registered Data.
(1) Pulse test: pulse width = 300 jls. duty cycle .. 2.0%
(2) For this test LED pins 1 and 2 are common and phototranslstor 'pIns 4, 5 and 6 are common.
(3) 'F adjusted to Ic 2.0 rnA and ic 0.7 rnA RMS.
(4), td and tr are Inversely proportional to the amplitude of IFi ts and tf are not sIgnificantly affected by IF.
=
=
CONSTANT CURRENT
INPUT
NC
N.C.
PULSE
MODULATION
INPUT
1.0.uF
47n 'I
I
I LED
1-
I
--
RD
o---'WI.-t----,
I
INPU6..-., 1--'I,'"IY+r---,,-....,
I
I
IPHOTO DARLINGTON
I TRANSISTOR
ILED
I
I
I
I
21
--...:5'-_~OUTPUT
o-_ _~---,~::2-=-::.;_::..::r _ _ _ _ _ _ _ ..J
I,
~~~~
'cIDe} "" 2.0 rnA
Ie (ACSINE WAVE) -0.7 mA RMS at 1KHz
C1098
--'.Oms
PULSE RATE·100pps
Note 2
FREQUENCY RESPONSE TEST CI RCUIT #1
12
SWITCHING TIME TEST CIRCUIT #2
C1099
4N29 4N30 4N31 4N32 4N33
APPLICATION INFORMATION
T2L LOGIC ISOLATION
LATCH
I
+Vcc
----...,
]
I
I
: ---------~
IL
________
~-----~----...,
I
I
I
I
-oJI
.----1._,
I
~
I
IL __________
.
...JI
'F
~
R
':"
el101
R"'Vec -J.6V
~
GNO
CllDD
NOT APPLICABLE TO 4N31
FORM C CONTACT
TRIAC TRIGGER
+Vee
--------.,
I
I
I
NO
I
-'
-,
I
I
I
Ne
Cl102
GNO
':"
NOT APPLICABLE TO 4N31
OPERATING A RELAY COIL
Vee < 55V
Vee< 9V
R<8MIl
R
IC<125mA
'e < 250mA
1!'e'F<"6mA
::r-
'F < SOmA
'F-
m
--
l
! _________--_-J"":-..,':"
Cl104
Cl104
13
4N29 4N30 4N31 4N324N33
TYPICAL ELECTRO·OPTICAL CHARACTERISTIC CURVES
(25°C Free Air Temperature Unless Otherwise Specified)
4.0
~O~M~ILIIZEb T6
h
'lc=O.SmA
VCE=5V
~
0
\
V
....-V
~
1.0
~ ......
0
0.1
FORWARD CURRENT If !mAl
1.0
10
100
Ie COLLECTOR CURRENT rnA
Cl106
Cl105
Fig. 1. Forward Voltage Drop vs.
Forward Current
120
10
..~
Z
,
a
"
~ICAl
~""" 5
~
1601--+-P'k+H111l--+-+
~
1401-.......!-++Nl11l--+-+< R"
>
z 1~
4
15
Q
~
I
100
I
or-~lJJm
~.:
\
\
IIIII
98% OF ALL UNITS
5M 10M
lOOK 200K 50CK 1M 2M
ROE - BASE EMITTER RESISTANCE - U
Cl05l
Fig. 7. Collector-Emitter Breakdown
Voltage vs. Base Resistance
' 0 " 20mA
TEST CIRCUIT
~t,,~
I
I
I
I
INPUT PULSE
PW= 2,,5
DUTY CYCLE = 1%
OV
OV--t--~_
tr';;
tr';;
10,,5
10 ns
.
OUTPUT < .4
--l
VOUT
Cl053
Fig. B. Test Pulse Definition (Note 3)
Fig. 9. Pulse Test Circuit for Fig. 7
17
4N35 4N36 4N37
TYPICAL ELECTRO·OPTICAL CHARACTERISTIC CURVES
(25°C Free Air Temperature Unless Otherwise Specified)
,.
.50
~
.45
~
.40
~
~ 1.
'F .. lOrnA
'c.=O.SmA
o
>
.30
~
.25
~
,20
V>
., 5
--
1
S .1 0
~
--
l- I-
MCT2! FORWARD VOLTAGE vs.
FORWARD CURRENT (VF vs. If I
4r- vs. T,Eiil,i,iTUr
~ 103
~
51.2
,35
is
5
>
o
~ 1.
~1;:~ihl
~d25J.
,..---
TA '"
~
~ 1.0
9..--8
o
10
20
30 40
50 60
70 80
90 100
.1
.2
TA - AMBIENT TEMPERATURE - ~c Cl054
.. 100 -
IF =SOmA
1
>=
~
4
V>
.~
60
0
......
z
1
I
/
8
~
1
10K
OPERATING SCHEMATICS
INPUT
1 F
47n.
HI--..'V"..r-...
LEO
25~A
2Ol'A1_
TA'" 2S"C
CONSTANT
CURRENT
INPUT
r
I
""""2.
L __ _
>--:-.--~
-I,
I I.
6
18 "SjJA
'8 -0
0
12
Cl057
16
20
24
VC,volts
Fig. 13. Detector Standard Tran~fer Curves
Vee = 10 VOLTS
PULSE
INPUT
-,
I
-.l
-r-
IOIlA_
[llll
1M
'OOK
Rs E - BASE RESISTANCE - I!
ClOSS
8
Vee = TOV
Fig. 12. Sensitivity vs. Base Resistance
MODULATION
-
I
4
II
20
0
50 toO
15iA
a
g
20
,U- --r-
40
w
10
J I
J J
'F=10mA
80
=
If = 2 0 m n .
,/~
5
Fig. 11. Forward Voltage
vs. Forward Current
Temperature
o
1
IF - FORWARD CURRENT - rnA
Fig. 10. Saturation Voltage
VB.
.5
V
"iJ~
III'
./
1
,;
,05
+100~
47n
-
I,
Vee = 10 VOLTS
DETECTOR
' - - -.....~-_OUTPUT
PULSE
OUTPUT
I,
Cl059
Fig. 14. Modulation Circuit Used to Obtain Output vs.·
Frequency Plot (Fig. 4)
Cl060
Fig. 15. Circuit Used to Obtain Switching Time vs.
Collector Current Plot (Fig. 5)
NOTES
1. Tests of input to output isolation current resistance and capacitance are performed with the input terminals (diode)
shorted together and the output terminals (transistor) shorted together.
2. The current transfer ratio (lC/IF) is the ratio of the detector collector current to the LED input current with
VCE at 10 volts.
3. Rise time (tr) is the time required for the collector current to increase from 10% of its final value, to 90%.
Fall time (tf) is the time required for the collector current to decrease from 90% of its initial value to 10%.
18
OPTICALLY ISOLATED LOGIC GATE
HIGH SPEED
PACKAGE DIMENSIONS*
6N 137
DESCRIPTION
TYPE NUMBER
J.
r-
The 6N137 is an optoisolator which combines a GaAsP LED as the emitter and an
integrated high gain multi-stage high speed
photodetector. The output of the detector
circuit is an open collector, Schottky
clamped transistor capable of sinking 50mA.
The open collector output provides capability for bussing, OR'ing and strobing.
The circuit is packaged in a plastic B-pin
mini-DIP designed to provide for 3000V
D.C. isolation withstand test voltage.
.007 us mm)
.013 (.33 mm)
FEATURES
I
I
-ITI =1
f--025165 mml MAX
.09012.29 mIn)
.IID/2.79mmJ
DIMENSIONS IN INCHES AND (MILLIMETERS)
C1589A
• High speed
• High common mode transient immunity
• TTL compatible
• Low input current
• S~ecified characteristics over temperature:
OCto 70°C
• Output-Strobable
• UL recognized (File #50151)
• High input to output isolation: 3000V dc
withstand test voltage
• VDE approval applied for
APPLICATIONS
A 0.01 to O.IIJF BYPASS
CAPACITOR MUST BE
CONNECTED BETWEEN
•
•
•
•
•
•
•
Isolated line. receiver
Microprocessor system interface
Data transmission isolation
Digital isolation for A/D, D/A circuits
Ground loop elimination
Instrument input/output isolation
Replacement for pulse transformer
PINS 8 AND 5.
(SEE NOTE 1)
C160SA
Fig. 1. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS* (Between O°C and 70°C)
Storage Temperature _ . . . . . . . . . . -55°C to +125°C
Operating Temperature . . . . . . . . . . . O°C to +70°C
Lead Solder Temperature
(1.6mm. Below seating plane) ...... 260°C for lOS
D-C/Average Forward Input Current ....... 20mA
Peak Forward Input Current
(t';; 1.0msec duration) . . . . . . . . . . . . . . . . 40mA
*JEDEC Regilttered Data.
Enable. Input Voltage, (VE)
(Not to exceed Vee by more than 500mV) .... 5.5V
Supply Voltage, (Vee! .... 7.0V/l minute maximum
Reverse Supply Voltage (Vee! . . . . . . . . . . - 500mV
Output Current, (10) . . . . . . . . . . . . . . . . . . 50mA
Output Voltage, (Vo) . . . . . . . . . . . . . . . . . . 7.0V
Collector Output Power Dissipation _ . . . . . . . B5mW
Reverse Input Voltage . . . . . . . . . . . . . . . . . . . 5V
19
I
6N137
RECOMMENDED OPERATING CONDITIONS
MIN.
0
+6.3
4.5
0
2.0
0
SYMBOL
IFl
IFH
Vcc
VEL
VEH
TA
N
Input Current, Low Level
Input Current, High Level
Supply Voltage, Output
Enable Voltage Low Level
Enable Voltage High Level
Operating Temperature
Fan Out (TTL Load)
MAX.
250
15
5.5
.0.8
Vcc
70
8
UNITS
p.A
mA
V
V
V
°c
+6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less.
ELECTRICAL CHARACTERISTICS (TA = O°C to 70°C Unless Otherwise Noted)
PARAMETER
SYMBOL
High Level Output Current
·'TYP.
MAX.
UNITS
IOH *
.01
.02
250
IlA
nA
Low Level Output Voltage
VOL *
.34
0.6
V
High Level Supply Current
ICCH *
10
15
mA
Low Level Supply Current
ICCl *
15
18
mA
Low
High
High
Low
IEL *
IEH
VEH
VEL
-1.5
-1.0
-2.0
0.8
mA
mA
V
V
1.75
Level Enable Current
Level Enable Current
Level Enable Voltage
Level Enable Voltage
2.0
Input Forward Voltage
VF*
Input Reverse
Breakdown Voltage
Input Capacitance
Input Diode
Temperature Coefficient
BVR *
Input·Output Insulation
Leakage Current
Resistance
(I nput to Output)
Capacitance
(I nput to Output)
Current
Transfer Ratio
1.55
5.0
V
IF = 10mA, TA
Figure 4
= 25°C
V
IR = 10llA, TA
= 25°C
VF = 0, f = lMHz
pF
tNF/f).TA
-1.4
mVfC
1.0
IlA
RI·O
1012
.11
CI·O
0.6
pF
CTR
750
%
** All typical values are at Vcc = 5V, TA
= 25°C.
Vcc = 5.5V,IF = OmA
VE = 0.5V
Vcc = 5.5V, IF = 10mA
VE = 0.5V
VCC = 5.5V, VE = 0.5V
VCC = 5.5V, VE = 2.0V
= 10mA
30
'1.0*
TEST CONDITIONS
VCC - 5.5V, Vo - 5.5V
IF = 250llA, VE = 2.0V
Figure 6
Vcc = 5.5V, IF = 5mA
VE = 2.0V,loL = 13mA
Figure 5
VCC = 5.5V,.IF
Note: 11
CIN
* JEDEC Registered Data.
20
MIN.
IF
= 10mA
Relative Humidity
TA =25°C, t = 5s
VI.O = 3000 VDC
Note: 10
VI_O =SOOV
Note: 10
F = lMHz
Note: 10
IF = S.OmA
RL = 100.11
Note: 12
=45%
6N137
SWITCHING CHARACTERISTICS (TA = 25°C, Vce = 5.0V)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
Propagation Delay Time
(For Output High Level)
tPLH *
48
75
ns
Propagation Delay Time
(For Output Low Level)
tpHL *
48
75
ns
Output Rise Time (10·90%)
tr
30
ns
Output Fall Time (90·10%)
tf
14
ns
tELH
25
ns
IF = 7.5mA
VEH = 3.0V
VEL =OV
ns
RL = 350n, CL = 15pF
Notes 6 & 7
Figure 11
Enable Propagation Delay
Time (For Output
High Level)
Enable Propagation Delay
Time (For Output
Low Level)
14
tEHL
Common Mode
Transient Immunity
(At Output High Level)
Common Mode
Transient Immunity
(At Output Low Level)
RL = 350n
CL = 15pF
IF = 7.5mA
Notes 2,3,4 & 5
Figures 7 & 10
CMH
50
v/Jls
CML
-150
v/Jls
I
VCM = 10V (Peak)
IF = OmA, VON (Min.) = 2.0V,
RL = 350n,
Note 9, Figure 13
VCM - 10V (Peak), IF = 5mA,
VOL (Max.) = 0.8V, RL = 350n,
Note 8, Figure 13
*JEDEC Registered Data.
TYPICAL CHARACTERISTIC CURVES (25°C Free Air Temperature unless otherwise noted)
9.0
>
~ 7.0
'"~
.,E
.1,,1
~~c==O~~07~OC -
B.O
~
~ 5.0
"r-~
rt
4.0
~
RL" lKn
3.0
'--
-;? 2.0
~
I \A L
'"
"~
350n
/
1
:r
\-r'
0
-
_\J.
/
.0 1
.0
Vc = COLLECTOR VOLTAGE IV)
C1614
Fig. 2. Optoisolator Collector
Characteristics
/
TA '" 25"C
1. 0
::>
o
~
/
r-
6.0
::>
1=
10.0
1.0
2.0
3.0
4.0
5.0
6.0
FORWARD INPUT CURRENT (IF. rnA)
1.2
C1602
1.6
1.4
VF , FOAWARD INPUTVQlTAGE (V)
C1600
Fig. 4. Forward Input Current vs.
Forward Input Voltage
Fig. 3. Output Voltage vs.
Forward Input Current
.B , . . - , - - , . - - , - - , - - - - - , , - . . . ,
Vee "'S.5V
w
~
7 I---+-+-j---j V, = 2.0V
.
-'
.6
g
IF'" 5.0mA
r--
t--t--t--t--t---,-t---j
5 .sl---+-+-j--+-+--j---j
~
10 .. l6mA,
10 = 12.amA
~ .3~
5.4~~~t~g~~~~~~
~ .2t--t~ro~·~6~.4m~Ar\~_+--1~~~=~·6~mC4A
10r---~----~-----t----~
OL-__
10
TEMPERATURE (TA • °C)
C1598
Fig. 5. Low Level Output Voltage vs.
Temperature
20
30
40
50
TA • TEMPERATURE (OC)
60
70
C1613
Fig. 6. High Level Output Current vs.
Temperature
o
~
____- J____
10
~
____- "
15
IF - PULSED INPUT CURRENT (rnA)
20
C1603
Fig. 7. Propagation Oelay vs.
Pulse Input Current
21
6N137
TYPICAL CHARACTERISTIC CURVES (25°C Free Air Temperature unless otherwise noted)
~,~8~~----1-----'
01
CURVE
TRACER
TERMINALS
,F
}-
]O--{!l---I---.....--o Vo
el'"
Fig. 8. Curve Tracer Connection to
Obtain Collector Characteristics
Fig. 9: Input·Output Schematic
INPUT
MONITo"R
(Ve )
.. <;.
is stray c'ircuit capacitance, including
the scope probe and is approximately 15pF.
C1592A
"C L is stray Circuit Capacitance, including the scope probe,
total ofappro)(im8tely 15pF
C1596A
~----------"'\- -
-
- -
- -
-
Ve =3.OV
INPUT
(Vel
_ltEHI..:~
OUTPUT
IVol
C1597A
Fig. 10. Test Circuit tpHL and tpLH
22
tELHj........-
I
I
I
I
I
~---
I
- - - - - - Vo=l.fN
C1599A
Fig. 11. Test Circuit tEHL and tELH
6N137
ChanA
INPUT
Chan B
1-.....---+-....--<0
I
+5V
47051
..L
Channel A ~
-:
I
1----1 tDL = 50ns (delay in response to logic High Level input)
Ch
I
anneB~
I - tDH = 20ns (delay in response to logic Low Level input)
-
CI611A
Fig. 12. Response Delay Between
TTL Gates
A
V fF
-=..
L-_ _ _~~---~s_LrV~'M~------__o
PULSE GEN.
C1593A
- - ---IOV
5V
CM,
SWITCH POS. tAl, 'F = 0
- - - - V o (MIN.)
':'2-
I\
O.5V _ _ _ _ _
- - - - VO (MAX.)
~WITCH
pas. ts), IF
= 5mA
C1594A
Fig. 13. Test Circuit for Transient
Immunity and Typical Waveforms
23
6N137
NOTES
1. The Vee supply voltage to each 6N137 isolator must be bypassed by a 0.011"F capacitor or larger. This can be either a
ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible
to the package Vee and GND pins of each device.
2. tpHL
• Propagation delay is measured from the 3.l5mA level on the LOW to HIGH transition of the input current pulse
· to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
3. tPLH
· Propagation delay is measured from the 3.l5mA level on the LOW to HIGH transition of the input current pulse
· to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
4. tf
• Fall time is measured from the 10% to the 90% levels of the HIGH to LOW transition on the output pulse.
5. t,
· Rise time is measured from the 90% to the 10% levels of the LOW to HIGH transition on the output pulse.
6. tEHL
· Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input
· voltage pulse to the 1.5V level on the HIGH to LOW of the output voltage pulse.
7. tELH
· Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input
· voltage pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse.
8. CML
. The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low
· output state (i.e., VOUT < 0.8V). Measured in volts per microsecond (V/JlS).
9. CMH • The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high
· state (i.e., VOUT > 2.0V). Measured in volts per microsecond (V/JlS).
10.
. Device considered a two· terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted
· together.
11. Enable· No pull up resistor required as the device has an internal pull up resistor.
Input
12.
24
. DC current transfer ratio is defined as the ratio of the output collector current to the forward bias input current
times 100%.
HIGH GAIN SPLIT-DARLINGTON OPTOISOLATORS
(MCC670)
(MCC67l)
DESCRIPTION
PACKAGE DIMENSIONS
The 6N138 and 6N139 are optically coupled
isolators witha split-darlington output configuration_ A red visible emitting diode manufactured from specially grown gallium
arsenide is coupled to a photo sensitive
circuit_
cC::J '
1
2
3
I
6N138
6N139
FEATURES
:::f;.
4
•
mm.
INCH
SYMBOL
.4
B
C
~'4
D
E
F
J
K
L
.325
.010
.110
.G22
.055
M
N
.175
G
H
MAX.
10.29
6.86
3.30
M
A
NOTES
I.·
.7.62 Ref.
0.36
8.26
1.78
2.79
0.56
1.40
4.46
P
C1340
1
•
•
2
3
4
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
4. THESE MEASUREMENTS ARE MADE FROM
PIN
1
2
3
4
5
6
7
B
N/C
LED ANODE
LED CATHODE
•
•
2. FOUR Pl.ACES
3. OVERALL INSTALLED POSITION
THE SEATING PLANE
5. MINIMUM 0.100 INCH
•
High sensitivity to low input currents
6N138-300% minimum CTR (IF = 1_6 mAl
6N139-400% minimum CTR (IF = .5 mAl
Fast switching capability at logic loads
6N138-10 Microseconds (ton)
35 Microseconds (t off)
6N139- 1 Microseconds (ton)
7 Microseconds (toff)
UL Recognized (File #E50151)
High input to output isolation = 3000V
DC withstand test voltage
VDE approval applied for
APPLICATIONS
• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
N/C
GROUND
OUTPUT
OUTPUT BASE
Vee
Cl3B5
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature. . . . . • . . .. _55°C to +125°C
Operating Temperature . . . . . . . . . . . O°C to +70°C
Lead Solder Temperature ........ 260°C for 10 Sec
(1/16" below seating plane)
Average Input Current - 'F . . . . . . . . . . . . . 20 mA
(See Note 1)
Peak Input Current - IF . . . . . . . . . . . . . . . 40 mA
(50% Duty Cycle, 1 ms Pulse Width)
Peak Transient Input Current - 'F. . . . . . . .. 1.0 A
« 1 Ilsec pulse width, 300 pps)
Reverse Input Voltage - VR ............... 5 V
*JEDEC registered data
Input Power Dissipation. . . . . . . . . . . . . .. 35 mW
(See Note 2)
Output Current - 10 (Pin 6) . . . . . . . . . . . . . 60 mA
(See Note 3)
Emitter-Base Reverse Voltage (Pin 5-7) . . . . . .. .5 V
Supply and Output Voltage-VeC (Pin 8-5), Vo (Pin 6-5)
6N138 . . . . . . . . . . . . . . . . . . . . -0.5t07V
6N139 . . . . . . . . . . . . . . . . . . . . -0.5 to 18 V
Output Power Dissipation . . . . . . . . . . . . . 100 mW
(See Note 4)
25
6N138 6N139
(MCC670 MCC671)
C1382
INVERTING LOGIC INTERFACE
NON-INVERTING LOGIC INTERFACE
Rt (NON·INVERT) =
OUTPUT
VOOl - VOF - VOll
"
Rt (INVERT) =
"
R, •
VOD2 -VOLx(@IL + 121
"
WHERE:
INPUT
VOOl - VOH1 - VOF
VaDl: INPUT SUPPLY VOLTAGE
CMOS
NON·INV.
@5V
tNV.
CMOS
NON-INV.
@10V
fNV.
NON-tNV.
tNV.
74XX
VOD2 : OUTPUT SUPPLY VOLTAGE
VD' : DIODE FORWARD VOLTAGE
VOll: LOGIC "0" VOLTAGE Of DRIVER
VOH1 ; lOGIC ''1'' VOLTAGE OF DRIVER
: DIODE FORWARD CURRENT
"
VOLX: SATURATION VOLTAGE OF MCC670
"
"
LOAD CURRENT THROUGH RESISTOR Rz
: INPUT CURRENT OF OUTPUT GATE.
CURRENT LIMITING
RESISTOR CALCULATION
74LXX
74SXX
74LSXX
74HXX
NON·INV.
tNV,
NON-tNV.
tNV.
NON-tNV.
tNV.
NON·tNV.
INV.
HI (H)
2000
510
5100
4700
2200
180
lBOO
100
2000
360
2000
180
2000
180
CMOS
.. 5V
R2 (n)
CMOS
@10V
H2 tn)
74XX
74LXX
74SXX 14LSXX 74HXX
R;I \111
R2 tn)
R2 (n)
R2(nI
R2!n1
1000
2200
750
1000
1000
1000
560
RESISTOR VALUES FOR LOGIC INTERFACE
vo..
TELEPHONE RINGING DETECTION USING OPTO-ISOLATOR
26
C1384
6N138 6N139
(MCC670 MCC671)
ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
.
100
II
TA
50
50
.
"z
!
/ ;'3
i'i
I
Vee ~!'IV
TA : 25"C
Vee' !'IV
TA • 25 C
25 C
"Z
5cmA
U
.A
~
~
2S
_0
FORWARD VOL TAGE
V
C1313
Vo
JJU
~1400
a
"
~1200 -
~1000
13
Vo
~
h'
~
04V
~
TA - 70 C
'.
~
25C
0C
Fig. 3. BN139 DC Transfer
Characteristics
10
_0
001
.010
A
FIG, 8
I
I
:
:
10
10
INPUT DIODE FORWARD CURRENT
rnA
C1378
Fig. B. BN139 Output Current
vs. Input Diode Forward Current
5V
t--...--oO>SV
I
I
(SATURATED
RESPONSE I
)'
I
~_ _ _ _~'J+--_vo<
FOR T'STCiRcu,rlij
1111
II
i·'" lilll
LOAD RESISTANCE
SV
{NON SAT'JRATED
90""
10""
RESPONSEl
_
kll
1--+--....,.-0 Vo
vo~o"
90',
II
10
i\
'F
~--r--I-Vo
III
,juSTED"OR
010
C1377
Fig. 5. BN138 Output Current
vs. Input Diode Forward Current
";sc_
,is:,:,
10
C1376
Fig. 4. Current Transfer Ratio
vs. Forward Current
10
10
10
l:'IJpur DIODE FORWARD CURRENT
10
FORWARD CURRENT
"
G1375
010
'F
'0
L
v
~ I00r-----r-----+-----~~
MCTOII
I
'0
OUTPurVOLTAGE
~
§"
TA
o~
17'"
Vu
-I:::
/,
400
C1374
TA ~ 25 C
T,.,,: O·C
6N139
~ 200
V
V~C"}~v
,.I.I,Jl
BOO
~600
OUTPUT VOLTAGE
Fig. 2. BN138 DC Transfer
Characteristics
Fig. 1. Input Diode Forward
Current vs. Forward Voltage
g
°°
1.21.3141.516 1.11B 1.9202.1
VF
25
a
~
_0
1.1
I
~
~
U
"
"a
II
,0 1
&omA
't
I,
C1380
C1379
Fig. 7. Non-Saturated Rise and Fall
Times vs. Load Resistance
Fig. 8. Switching Test Circuit
1----,--0 'SV
VCM~OV-----',,11- 20ns
90%
10"0
OV
10%
90"..
I,
'I
-
r---'--oVo
Vo
5V
SWITCH AT A
'F - OmA
V"
~VOL
Va
SWITCH AT B IF
~
!6mA
PULSE GEN
C138!
Fig. 9. Test Circuit for Transient Immunity and Typical Waveforms
27
6113861139
(MCC670 MCC671)
ELECTRICAL SPECIFICATIONS (0° to +70 D C Temperature unless otherwise specified)
CHARACTERISTIC
SYMBOL
·Current Transfer Ratio
(Notes 5, 6)
MIN
TYP'
6N139
400
500
300
MAX
UNITS
TEST CONDITIONS
%
V
p.A
p.A
IF = 0.5 mA, Vo = 0.4 V, Vee = 4.5 V
IF = 1.6 mA, Vo = 0.4 V, Vee = 4.5 V
IF=I.6mA,VO=0.4V,Vee=4.5V
IF = 1.6 mA, 10 = 6.4 mA, Vee = 4.5 V
IF = 5 mA, 10 = 15 mA, Vee = 4.5 V
IF = 12 mA, 10 = 24 mA, Vee = 4.5 V
IF = 1.6 mA, 10 = 4.8 mA, Vee = 4.5 V
IF=OmA,Vo=Vee=18V
IF=OmA,Vo=Vee=7V
mA
IF = 1.6 mA, Vo = Open, Vee = 5 V
nA
IF = OmA, Vo= Open, Vee = 5V
10H
6NI38
6N139
6N138
800
900
600
0.06
0.08
0.09
0.06
0.1
0.001
leeL
6NI38/6N139
0.20
leeH
6N138/6N139
10.0
VF
8VR
IlVF
IlTA
Co
6N 138/6N 139
6NI38/6N139
1.45
6N138/6N139
-1.8
mvtc
6N138/6N139
40
pF
11•0
6N 138/6N 139
R I· o
6NI38/6N139
10'2
CI· O
6N138/6N139
0.6
6N138
6NI39
Logic Low Output
Voltage (Note 6)
"Logic High Output
Current (Note 6)
Logic Low Supply
Current (Note 6)
Logic High Supply
Current (Note 6)
"Input Forward Voltage
Reverse 8reakdown Voltage
Temperature Coefficient
of Forward Voltage
Input Capacitance
"Isolation Leakage
(lnput·Output) (Note 7)
Resistance
(lnput·Output) (Note 7)
Capacitance
(lnput·Output) (Note 7)
DEVICE
0.4
0.4
0.4
0.4
100
250
1.7
5
1.0
%
V
V
V
p.A
IF = 1.6mA, TA = 25'C
IR = 10p.A, TA=25'C
IF = 1.6 mA
f = 1 MHz, V F = 0
45% Relative Humidity, TA = 25'C
V I•O = 3000 V, td = 5 sec
VI.O = 500 Vdc
pF
f = 1 MHz
(All typicals at TA = 25'C and VCC = 5 V, unless otherwise noted,)
SWITCHING SPECIFICATIONS
PARAMETER
Propagation Delay Time To
"Logic Low at Output
(See Fig. 8; Notes 6, 8)
Propagation Delay Time To
"Logic High at Output
(See Fig. 8; Notes 6, 8)
Common Mode Transient
Immunity at Logic High
Level Output
(See Fig. 9; Note 9)
Common Mode Transient
Immunity at Logic Low
Level Output
(See Fig. 9; Note 9)
SYMBOL
tpHL
tpLH
(TA = 2SoC)
DEVICE
6N139
6N139
6N138
6N139
6N139
6N138
MIN
TYP
MAX
UNITS
5.0
0.2
1.0
10
1.0
4.0
25
1
10
60
7
35
p.s
p.s
p.s
lAS
p.s
I'S
TEST CONDITIONS
IF = 0.5 mA, RL = 4.7 kD.
IF = 12 mA, RL = 270 D.
IF = 1.6 mA, RL = 2.2 kD.
IF = 0.5 mA, RL = 4.7 kD.
IF=12mA,R L =270D.
IF = 1.6 mA, RL = 2.2 kD.
CM H
>500
Vlp.s
IF = 0 mAo R L = 2.2 kD.
IVeml = 10 Vp.p
CM L
<-500
VII'S
IF = 1.6 mA, RL = 2.2 kD.
IVeml = 10 V p•p
NOTES
1.
2.
3.
4.
5.
6.
7.
8.
9.
Derate linearly above 50° C free-air temperature at a rate of 0.4 mA/oC.
Derate linearly above 50°C free·air temperature at a rate of 0.7 mW/oC.
Derate linearly above 25"C free·air temperature at a rate of O. 7 mA/oC.
Derate linearly above 25"C free·air temperature at a rate of 2.0 mW/oC.
DC CURRENT TRANSFER RA TlO is defined as the ratio of output collector current,lo, to the forward LED
input current, IF, times 100%.
Pin 7 Open.
Device considered a two· terminal device: Pins 1,2,3, and 4 shorted together and Pins 5, 6, 7, and 8 shorted together.
Use of a resistor between pin 5 and 7 will decrease gain and delay time.
Common mode transient immunity in Logic High level is the maximum tolerable (positive) dVcm/dt on the leading
edge of the common mode pulse, Vcm , to assure that the output will remain in a Logic High state (i.e., Va> 2.0 V).
Common mode transient immunity in Logic Low level is the maximum tolerable (negative) dVcm/dt on the trailing
edge of the common mode pulse signal, Vcm , to assure that the output will remain in a Logic Low state (i.e.,
Va 14.1mml
Weight max, 1.5g
Anode
Collector
1
4
APPLICATIONS
Cathode
C1B24
• DC Isolation 1I.0ltage 11.6 kV
• Nominal isolation operating voltage 2 1000 VAC
or 1200 VDC for isolation group B according to
VDE 0110b/2.79
• Test class 25/100/21 DIN 40 045
• Low coupling capacity typo 0.3. pF
• Current transfer ratio typo 100%
• Underwriters Laboratory (UL) recognized
File No. E76414
•
•
•
•
•
•
Medical Instrumentation
Industrial Controls
Power supply monitor
Solid state relays
High frequency power supply feedback control
AC line to digital logic isolation
Emitter
C1623
Fig. 1. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
INPUT-LED CIRCUIT
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .. 5V
Forward Current . . . . . . . . . . . . . . . . . . . . 75mA
Forward surge current (tp OS;; 1Oils) .••••••••. 1.5A
Power- dissipation (TA OS;; 25°C) . . . . . . . . . . 120mW
Junction temperature . . . . . . . . . . . . . . . . . 100°C
OUTPUT-DETECTOR CIRCUIT
Collector-emitter voltage . . . . . . . . . . . . . . .. 32V
Emitter-collector voltage ...... . . . . . . . . . .. 7V
Collector current . . . . . . . . . . . . . . . . . . . . 50mA
Peak collector current (tp/T = 0.5, tp OS;; 10ms) 100mA
Power dissipation (TA OS;; 25°C) . . . . . . . . . . 130mW
Junction temperature . . . . . . . . . . . . . . . . . 100°C
TOTAL PACKAGE
Storage temperature . . . . . . . . . . . _55°C to +100o C
DC isolation voltage (t = 1 minute)3 . . . . . . . 11.6kV
Power dissipation (TA OS;; 25°C) . . . . . . . . . . 250mW
33
CNY65
ELECTRICAL CHARACTERISTICS (25°C Temperature Unless Otherwise Specified)
CHARACTERISTICS
SYMBOL
INPUT LED
Forward Voltage
VF*
Reverse Breakdown
BVR*
Voltage
Junction Capacitance
CJ
OUTPUT DETECTOR
Coliector·Emitter
BVCEO *
Breakdown Voltage
Emitter·Collector
BV ECO *
Breakdown Voltage
Collector Leakage
ICEO *
Current
COUPLED CHARACTERISTICS
Current Transfer Ratio
CTR*
Current Transfer Ratio
CTR*
Coliector·Emitter
VCE(SAT) •
Saturation Voltage
DC Isolation Voltage 1
VISO **
Isolation Resistance
Rlso
Isolation Capacitance
CISO
Bandwidth
MIN.
TYP.
MAX.
UNITS
1.25
1.6
V
5
CONDITIONS
IF =50mA
V
IR = 100j.lA
pF
V R = 0, f = 1mHz
32
V
Ic = 1mA
7
V
IE = 100j.lA
50
50
60
10
200
nA
VCE = 20V
100
300
%
%
IF = 10mA, VCE = 5V
IF = 20mA, VCE = 5V
0.3
V
11.6
BW
IF = 10mA, Ic = 1mA
1012
0.3
kV
n
pF
110
kHz
= 1 min.
VI SO :, 1000V, 40% R.H.
f = 1mHz
IF = 10mA, VCE = 5V,
RL = 100n
t
* AOL =0.65%
** AOL = 2.5%
1 Related to standard climate 23/50 DIN 50014
SWITCHING CHARACTERISTICS
CHARACTERISTICS
SYMBOL
Delay time
Rise time
Turn·on time
Storage·time
Fall time
Turn·off time
MIN.
TYP.
I t o-_~/_F-.,
= 0.Q1
tp =
501'5
j.ls
j.ls
j.ls
j.lS
j.lS
j.lS
Ie = 5 rnA; -adjusted through
input amplitude
I
I
I
I
I
I
L._
I
.J
Channell
Oscilloscope
RL ;;'1 Mn
CL
.;
20 pI
50n
C1625
Fig. 2. Switching Time Test Circuit
34
CONDITIONS
Vcc = 5V,
Ic = 5mA,
RL = 100n
See test ci rcu it.
...,
,I
i
UNITS
+ 5V
o
RG = 50n
MAX.
2.5
4.5
7.0
0.3
3.7
4.0
td
tr
ton
ts
tf
toff
eNY65
TYPICAL ELECTRICAL CHARACTERISTICS CURVES (25°C Free air temperature unless otherwise specified)
VeE
......
100
~
I
5V
1.0
;;T
1=
«
50
a:
tJ
0.8
0.6
~
Scattering limit
!s=
0.5
IF
I
w
.;;
10
0.4
5
0.2
Ij
V
\
0.2
0.1
/
0
0.1
10
5
C1626
IF -(rnA)
50
C1627
Fig. 4. VCE (SAT) VS.
Collector Current
Fig. 3. Current Transfer Ratio
vs. Forward Current
'.20mA
~
E
r.Tz(
II
10
c
T
'I
-"
1
~~
'L
'2..~
fl
II
'1
0.1
10
VeE (V)
C1628
Fig. 5. Collector Current
vs. Collector Voltage
NOTES
1. Creeping current resistance: Group /1/ (KB>600-KC>600) according to VDE 0110b/2.79 table 3 and DIN 53
480IVDE 0303 part 1/10.76.
2. According to VDE test certificate dated 3/19/82.
3. Related to standard climate 23/50 DIN 50 014.
35
36
VDE TESTED,
PHOTOTRANSISTOR OPTOISOLATOR
CNY75A
CNY75B
CNY75C
PACKAGE DIMENSIONS
DESCRIPTION
Dimensions in inches (millimeters)
The CNY75 Series is an optoisolator which combines a
GaAs emitter with a silicon NPN phototransistor. This
device offers high isolation voltage (5.3 kV min.) as well
as high BVCEO (70 V min.). The CNY 75 is packaged in
a plastic six-pin dual-in-line package. VDE approval is
pending.
FEATURES
.100 ± .008 12.54 ± .21
II
II
4
R
~~t- <.""<.~,
o
-I
\-.299
II
13
II
~ :g~~ 17.6 ~ :~I
II
Airpath ,7.4 mm 2
Creeping Distance> B.6 mm 2
Weight;:: approximately 0,7 9
C1614
Isolation voltage 5.3kV'
Nominal isolation operating voltage '-500V AC or
600V DC for isolation group C according to VDE
011 0/b/02. 79
VDE test class 25/100/21 DIN 40045
Low coupling capacity typo 0.3 pF
Current transfer ratio in selected groups:
CNY75A: 63%-125%
CNY75B: 100%·200%
CNY75C: 160%-320%
Underwriters Laboratory (U L) recognized
File No. E76414
APPLICATIONS
II
II
II
II
II
II
Telephone circuits
Digital input to telecommunications
Industrial control systems
Power supply regulators
Appliance sensor systems
Microprocessor controls
C1615
Fig. 1. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature range ....... _55°C to +100°C
DC isolation voltage (t = 1 min)3 . . . . . . . . . . 5.3kV
Total power dissipation (TA OS;;; 25°C) ...... 250mW
Solder lead temperature (t OS;;; 3s)4 ......... 260°C
EMITTER
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward current . . . . . . . . . . . . . . . . . . . . . 60mA
Forward surge current (tp OS;;; 1O~s) . . . . . . . . . . . 3A
Power dissipation (TA OS;;; 25°C) . . . . . . . . . . 100mW
Junction temperature . . . . . . • . . . . . . . . . . 100°C
DETECTOR
Collector-base voltage . . . . . . . . . . . . . . . . .. 80V
Collector·emitter voltage . . . . . . . . . . . . . . . . 70V
Emitter-collector voltage . . . . . . . . . . . . . . . . . 7V
Collector current . . . . . . . . . . . . . . . . . . . . 50mA
Collector peak current (tp/T = 0.5, tp OS;;; 10ms) 100mA
Power dissipation (OS;;; 25° C) . . . . . . . . . . . . 150mW
Junction temperature . . . . . . . . . . . . . . . . . 100°C
37
I
CNY75A CNY75B CNY75C
ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature Unless Otherwise Specified)
CHARACTERISTICS
INPUT DIODE
Forward Voltage
Reverse breakdown
Voltage
Junction Capacitance
OUTPUT TRANSISTOR
Collector-base
Breakdown Voltage
Collector-emitter
Breakdown Voltage
Emitter·Collector
Breakdown Voltage
Collector-emitter
leakage current
COUPLED DEVICE
Current Transfer Ratio
Group A
Group B
Group C
Collector·em itter
Saturation Voltage
DC Isolation Voltage 5
Isolation Resistance 5
Isolation Capacitance
Bandwidth
SYMBOL
MIN.
VF*
BV R *
TYP.
MAX.
UNITS
1.25
1.6
V
pF
= 50mA
= 100/.lA
V R = 0, f = 1mHz
V
5
50
CJ
CONDITIONS
IF
IR
BVCBO *
80
V
Ic = 100/.lA
BVCEO *
70
V
Ic = 1mA
BV ECO *
7
V
IE
150
nA
VCE = 30V, IF
125
200
320
%
%
%
ICEO *
30
= 10mA, VCE = 5V
V
IF
= 10mA, Ic = 1mA
1012
0.3
kV
n
pF
110
kHz
t= 1 min.
VISO = 1000V, 40% R.H.
f = 1 mHz
IF = 10mA, VCE = 5V,
RL = 100n
63
100
160
0.3
5.3
BW
=0
IF
Ic/IF *
VCE(SAT) *
VISO **
Rlso
CISO
= 100/.lA
* AOL = 0.65%
** AOL = 2.5%
SWITCHING CHARACTERISTICS
CHARACTERISTICS
SYMBOL
Delay time
Rise time
Turn·on time
Storage·time
Fall time
Turn-off time
MIN.
TYP.
UNITS
/.IS
/.IS
/.IS
/.IS
/.IS
/.IS
Ic=5mA; adjusted through
!j!= 0.01
RG
MAX.
2.5
3.5
6.0
0.3
3.2
3.5
td
tr
ton
ts
tf
toff
input amplitude
= 50n
tp= 50/lS
Oscilloscope
RL >lMn
Channel I
CL
Channel II
50n
lOOn
C1616
Fig. 2. Test Circuit for Switching Characteristics
38
.;
20pF
CONDITIONS
VCC = 5V,
Ic = 10mA,
RL = 100n
See Figure 2
CNY75A CNY75B CNY75C
TYPICAL ELECTRICAL CHARACTERISTICS CURVES (25°C Free air temperature unless specified)
IF - 20mA
-
10mA
",..
IIIII
5mA
,"
~I
VCE = 5V
r-
600
iJ~~
~
w
u.
-
2mA
I/.
I
800
~
-<::
400
0.5
200
Ilf
I
11/
CNY75B
0.1
o
0.1
10V
VCE-(V)
10
Ic-(mA)
C1619
Fig. 3. Collector Current vs.
Collector Voltage
II
I
a
Fig. 4. hFE vs. Collector Current
I
Tamb=+:~ C
~ 1-1'-0
+50°C
25~cl
100
~
T
cr:
f0-
80
60
e.>
40
20
-2r~~
~~
k!
10
Vee = 5V
RL = 100n
,.
r'\
8
r-.
0;
::l.
u.
u.
6
z
.9
VeE = 5VCNY75A_
+50°C
1\
1\
"""
~ l--"" r-i'
t-+90°C
~
.9,
~ ./
~
A
C1618
!'I"-
~
ton
1"'"
r-
~
4
toft
""'''''
2
0
5
0
50
C1617
Fig. 5. Current Transfer Ratio vs.
Forward Current
5
10
Ic-(mA)
15
C1620
Fig. 6. Switching Time vs.
Collector Current
(See Fig. 2 for Test Circuit)
39
CNY75A CNY758 CNY75C
TYPICAL ELECTRICAL CHARACTERISTICS CURVES (25°C Free air temperature unless specified)
---I _CNY75A
0.8
0.8
Ie
I,
~ 0.6
;:
~
~
0.8
Ie
~ 0.6
0.5
IF - 0.5
.,:; 0.6
L
.; 0.4
~
1/
0.4
>
I-- r-CNY75C
I - - f-CNY75B
;
0.4
a
"
0.2
0.2
0.1
0.1
o
1
50
0.2
0.2
0.1
o
10
L
0.2
r-..
0.2
Ie
'F - 0.5
Ic-(mAI
50
10
1
50
10
C1621
Ic-(mA)
Ic-/mAl
Fig. 7. Saturated Collector Emitter Voltage vs.
Collector Curren t
CNY75 B
CNY75A
-
111111
scatteri~g';i'~its
I
CNY 75 C
S~~'~~ering limits
-
roo-
,/
Scattering limits.
0.5
0.5
0.5
~~
.?i-"
o. 1
'"
VeE - 5V
0.05
o. 1
i;'
o.
VeE - 5V
0.05
II
0.01
0.1
10
II
0.0 1
0.1
10
IV
0.1
Fig. 8. Current Transfer Ratio vs.
Forward Current
NOTES
40
II
0,01
IF-(mA)
1.
2.
3.
4.
5.
VeE - 5V
0.05
According to VDE 0883/6.80. VDE-certificate has been applied.
Creeping current resistance: Group I according to VDE 0110 & 6 table 3 and DIN 53 480/VDE 0303 part 1.
Related to standard climate 23/50 DIN 50 014.
Distance from the touching border ~ 2 mm.
Related to standard climate 23/50 DIN 50 014.
10
C1622
HIGH VOLTAGE PHOTODARLINGTON OPTOISOLATOR
I
MCA11Gl
MCA11G2
PACKAGE DIMENSIONS
DESCRIPTION
The MCA11G1 and MCA11G2 are photodarlington·
type optically coupled optoisolators. Both devices have
an infrared light emitting diode manufactured from
specially grown gallium arsenide, coupled with a
silicon, darlington connected phototransistor which
has an integral base·emitter resistor to optimize
elevated temperature characteristics. These devices are
supplied in a standard plastic six-pin dual·in·line
package.
FEATURES
r- l"rSEATlNG~m1
n
•
~-L
SYMBOL
,,
A
,,
,,
D
~
PLANE
G
P M
Lct240
~jjrK
I~~H:'S
MAle.
.365
9.27
.,
"
.300R~.
7.82RI1.
.014
11.36
MIL.
.. ..."
.270
.325
'.06
,.,
,
D."
2.16
.175
4.45
.,
3
M
•
•
1.18
.070
.''"",
,
,
8.~6
H
N
NOTES
•
•
NOTES
I. INSTALLED POSITION OF LEAD CENTERS
ANODE
CATHODE
~
2. FOURPLACe5
3. OVERALL INSTALLED.j>OSITION
1
6
BASE
2
5
COl.LECTOR
3
4
4. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE
5. MINIMUMO.I(X)INCH
EMITTER
C1710
Fig. 1. Equivalent Circuit
•
High BVcEo
Minimum 100V for MCA11G1
Minimum BOV for MCA 11 G2
High sensitivity to low input current Minimum SOO percent CTR at IF= 1 mA
High isolation voltage
2S00 VAC RMS - Steady State Rating
Low leakage current at elevated temperature
(maximum 100llA at BO°C).
.
Underwriters Laboratory (UL) recognized
File #ES01S1
VDE approval applied for
APPLICATIONS
• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature ..•.. . . . .. -SSoC to 1S0°C
Operating temperature .•.•..•.. -SSoC to 100°C
Lead temperature
(Soldering, 10 sec) ....•..•.•........ 260°C
Total package power dissipation @ 2SOC
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 2SoC . . . . . . . . . . 3.S mW/oC
Isolation voltage ..•.•....•.•.... 2.S kV RMS
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60mA
Reverse voltage . . . . . . . . . . . . . . . . . • . . . . 6 V
Peak forward current
(1 I"S pulse, 300 pps) . • . . . . . . . . • . . . . .. 3.0 A
Power dissipation 2SoC ambient . . . . . . . . 100mW
Derate linearly from 2SoC . . . . . . . . . . 1.B mW/oC
OUTPUT TRANSISTOR
Power dissipation @ 2SoC . . . . . . . . . . . • . 200 mW
Derate linearly from 2SoC . . . . . . . . . 2.67 mW/oC
Collector to emitter voltage
MCA11G1 . • . . . . . . . . . . . . . . . . . . . . 100 V
MCA11G2 . . . . . • . . . . . . . . . . . . . . . . . BOV
41
MCA11G1, MCA11G2
ELECTRO-OPTICAL CHARACTERISTICS (250 Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
Current Transfer Ratio
collector to emitter
CTR
1000
500
0
Q
Saturation voltage
%
%
IF = 10mA;VCE = IV
IF = 1 mA; VCE = 5V
V
V
IF = 16mA;lc =50mA
IF = 1 mA; Ic = 1 mA
ps
ps
RL=100n;IF=10mA
VCE =5V
Pulse width" 300 psec,
f " 30 Hz
VCE(SATI
.S5
.75
1.0
1.0
Cl
~rn
J:W
o:i!:
1-1:1-
Turn-on time
Turn-off time
5
100
ton
toff
rn
Surge isolation
Viso
Steady state isolation
Visa
Isolation resistance
Riso
Isolation capacitance
Ciso
Z
0
f:
«
-'
0
!!!
4000
VDC
3000
VAC·rms
3500
VDC
2500
VAC-rms
10"
}
Relative humidity" 50%,
11-0" 10pA
}
Relative humidity" 50%,
11-0" 10 pA
1 minute
ohms
pF
.5
1 second
VI.O = 500 VDC
f= 1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC
W
Q
0
Forward voltage
Forward voltage temp.
:l
Reverse breakdown voltage
e
I-
"~
SYMBOL
MAX.
UNITS
1.3
1.50
V
10
mV/"C
V
pF
pF
pA
IR = 10pA
VF = 0 V, f = 1 MHz
V F = 1 V, f = 1 MHz
V R =3.0V
100
BO
V
IC = 1.0 mA, IF = 0
100
BO
7
V
Ic=100pA
V
IE = 100 pA, IF = 0
coefficient
Junction capacitance
Reverse leakage current
BVR
CJ
TEST CONDITIONS
TYP.
MIN.
VF
3.0
IR
-1.B
25
50
65
.35
IF = 60mA
Breakdown voltage
Z
0
ICl
Z
::;
a:
«
Q
I:l
"I:l
0
Collector to emitter
MCA11Gl
MCAllG2
Collector to base
MCAllGl
MCAllG2
Emitter to collector
Leakage current
Collector to emitter
MCA11Gl
MCAllG2
MCA11Gl
MCAllG2
42
BVCEO
BVCBO
BVECO
10
ICEO
100
100
100
nA
nA
pA
100
pA
VCE =BOV,IF
VCE =60V,IF
VCE = SOV, IF
TA = BO°C
VCE = 60V, IF
TA = SO°c
=0
=0
= 0,
= 0,
MCAllGl, MCAllG2
TYPICAL-ELECTRICAL CHARACTERISTIC CURVES
(25°C Free air temperature unless specified)
1,000
«
E
I
IZ
w
II:
II:
I
100
10
~
W
N
.01
/
~
.001
o
.S
/
~
II:
1.0
NORMALIZED T O·
VeE = S V
IF = 1 rnA
IIII
0
1.0
1.S
2.0
~
I
0
I
1\
I
::::i 2.0
«
z
r\
\
/
0
0.1
II:
3.0
()
/
II:
0
u..
II:
I-
/
1.0
0
I
4.0
/
:::>
()
"
----
.1
IF -
VF - FORWARD VOLTAGE - VOLTS
10
(rnA, 300 p'S pulses)
C1704
C1709
Fig. 2. Forward Voltage vs.
Forward Current
Fig. 3. Normalized CTR vs.
Input Current
100
10
IZ
w
1/-
II:
II:
3 10.0
I-
~
"'-
V
----------
:::>
= SO rnA
./
10 rnA
1 rnA
II:
I-
()
o
./
a...
~
o
o
IF
IF
IF
w
./
N
1.0
::::i
«
-
~
:-?'-
IF
IF
IF
-
10 rnA
SO rnA
1 rnA
: / ' ~ ...............
""""
II:
o
Z
0.1
~
II:
o
z
1.0
~
w
!:::!
~
0.01
100
NORMALIZED TO
IF 1.0 rnA (300 P.s pulse)
VeE = S V
01234
S
6
VeE - COLLECTOR TO EMITTER VOLTAGE (V)
0.1
-SO°C
NORMALIZED TO
TA = 2SoC
IF = 1.0 rnA (300 P.s pulse)
VeE = S V
C1706
C170S
Fig. 4. Output Characteristics
'"
Fig. 5. Normalized CTR vs.
Temperature
43
MCAl1Gl, MCAl1G2
TYPICAL·ELECTRICAL CHARACTERISTIC CURVES (Cant.)
(2SoC Free air temperature unless specified)
10
100
10
'/
VeE - aov
50V
~ 1= VeE
VeE 10V
=
~
E
I
""'-
IZ
/I
w
a:
a:
E .100
\
\
\
= 10 n
\100 n
I-
::>
Q.
~
./
-
.!!:
i--""
i-"'" i-"'"
20°C
40°C ao°c
O°C
TA - (OC)
ao°c
100°C
I'"
NORMALIZED
TO:IF = 10 mA
RL = 100 n
VeE = 5 V
0.1
0.1
"
"
~
1.0
tON
C1707
Fig. 6. Dark Current vs.
Temperature
1K
()
I/f 'v
.010
.001
\
i\RL
::> 1.0
o
44
«
+ tOFF
10
NORMALIZED TOTAL
SWITCHING SPEED
C170a
Fig. 1. Switching Speed
PHOTO DARLINGTON oPTolSoLAToRS
MCA230
MCA255
DESCRIPTION
PACKAGE DIMENSIONS
r:] r'l
The MCA230 and MCA255 optoisolators contain a
gallium arsenide infrared emitting diode optically
coupled to a silicon planar photodarlington transistor.
Both units are sealed in a 6-lead plastic DIP package.
Electrical isolation compares favorably with that of a
relay-without the relay's inherent magnetic field. The
MCA230 has a minimum collector-emitter breakdown
voltage of 30 volts and the MCA255, 55 volts.
-+
[0 tnJ
4:;F
"3
1
I
rLI
SEATiNG
PLANE
I I
-
G
-
~_I_II-~
-l
K
CB6'
SYMBOL
A
B
C
0
E
F
G
H
J
K
L
@
ANOOE I
CATHOOE 2
3
8 lASE
5 COLLECTOR
4 EMITTER
M
N
P
INCHES
MAX.
MAX.
9.27
.270
6.86
4.06
.160
15'
15'
.300 Ref. 7.B2Rel.
.014
B,•
.3.25
.070
1.78
2.79
.110
.022
0.58
2.16
NOTES
.36'
"
.
.00'
.175
4.45
1
2
3
4
,
NOTES
1. INSTALLED POSITION OF L.EAD CENTERS
2. FOUR PLACES
3. OVERALL. INSTALLED POSITION
4. THEse MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
5. MINIMUM 0.100 INCH
FEATURES & APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
•
High collector current rating - 125 mA
Fast operate time - 10 /lS
Fast release time - 35/ls
High isolation resistance - 10" n
High dielectric strength, input to output - 4000 VDC
Low coupling capacitance - 0.5 pF
Convenient package - plastic dual-in-line
Long lifetime, solid state reliability
Low weight - 0.4 grams
Replace reed relays for 50 mA, 55 V DC loads
Replace pulse transformers
Form multiple contact, NO/NC relays
Useful for telephone lines, telegraph lines, SeR
triggers, hospital monitoring systems, airborne
systems, remote data gatheri ng systems and remote control systems.
• Use as a low-current alarm monitor for battery
powered supplies
• UL recognized - File E50151
• VDE approval applied for
ABSOLUTE MAXIMUM RATINGS
Storage Temperature .•.......... _55°C to 150°C
Operating Temperature . . . . . . . . . . . _55°C to 100°C
Lead Soldering time @ 260°C . . . . . . . . . . . . . . 7.0 sec
Total power dissipation @ 25°C ambient .. _. 250 mW
Derate linearly from 25°C. . . . . . . . . . .. 3.3 mWtC
LED (GaAs Diode)
Power dissipation @ 25°C ambient . . . . . . . . . 90 mW
Derate linearly from 2SoC . . . . . . . . . . . , 1.2 mW/C
Continuous forward current ...........•. 60 mA
Reverse voltage . . • . . . . . . . . . . . . . . . . . . 3.0 V
Peak forward current ( 1/lsec pulse, 300 pps) .. 3.0 A
DETECTOR
(Silicon Photo Transistor)
MCA230
Power dissipation
@ 25°C ambient . . . . . . . . 210 mW
Derate linearly from 25°C .. 2.8 mW/C
Collector-emitter breakdown
voltage (BVCEO ) •.•••••••• 30 V
Collector-base breakdown
voltage (BVCBO ) •••••••••• 30 V
Emitter-base breakdown
voltage (BVEBO ) ••••••••• 8.0 V
Collector-emitter
current (ICE) • . . • . • • • • 125.0 mA
MCA255
... 210 mW
.2.8 mW/C
..... 55 V
..... 55 V
.... 8.0 V
.... 125.0mA
45
I
MCA230 MCA255
DC RELAY CHARACTERISTICS (TYPICAL)
CONTACTS
Contact configuration
Contact load rating
SPST·NO
50 mA DC
30 V DC
55 V DC
MCA230
MCA255
Contact withstand voltage
LOV
10 Jlseconds
Closed contact voltage
Operate time with 100 nload
Release time with 100 nload
COIL
Turn on voltage
Turn on current at rated contact load
35 Jlseconds
1.3 V
50 mA
ISOLATION
Dielectric strength, contacts to coil
Isolation resistance, contact to coil
Capacitance, contacts to coil
WEIGHT
4000 VDC minimum
lO" Ohms
1.0 pF
0.4 grams
APPLICATIONCI RCUITS
OPERATING A RELAY COIL WITH MCA2
Vee < 9 v
R< SMn
'c< 250mA
I l'c "< ..
ISOLATE T2L LOGIC WITH MCA2
6mA
]:---------1
L
__ -'-_____
MCA2
C883
-1
~---lL...'"
VCC <55V
'c<125mA
'F<50mA
CBBl
',-
: (r 1
n m
-
I
'-~I--~
__________ J
C884
NOTES
1. The current transfer ratio (lcIIF) is the ratio of the detector collector current to the LED input current with VCE
at 5 volts.
2. The frequency at which ic is 3 dB down from the 1 kHz value.
3. Rise time (tr) is the time required for the collector current to increase' from 10% of its final value, to 90%.
Fall time (tf) is the time required for the collector current to decrease from 90% of its initial value to 10%.
46
MCA230 MCA255
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES
14
60
13
"
:;
E
~
40
30
~
20
0
a
0.5
1.0
1.5
2.0
h
tc=O,5 rnA
Vce=5V
3.a
"BE
/
2. a
I
1.0
RBE "'Open
10
104
I
103
RBE=OPE~
V
_u@ 102
10 '
1.0
/
%
75
100
TEMPERATURE-OC
-i100
80
!d
60
40
20
V
~.E·
""......
,.!!;.
:-
lOW SAT
-
......
10 20 30 40 50 60 70 80 90 TOO
TA AMBIENT TEMPERATURE r C)
cal5
w
";::
it
"
RBe
'"z 0.0
51::
ii
50 rnA peak
'~~III
1~
Ree = 1 M{l
0.001
100
10K
1 M
IF - 50 rnA peak
10 V
~R'E = 5 Mn l==vcc •
',R
M-
JJJ
lK
0.4
225
0.3
"
I--'"
V
a 1--:a
AVE SAT
Fig. 6. VCE-SA T vs. Temperature
OPEN
300
0.5
V
u
>
C874
MCA2
Ie" 125mA
'F = SOmA
I
RL -
V
E
,
.8a
.7 8
/
Ase - O~~~:·ttl--I~H-H+ttl
" .. = lOMn
illl
I j IIIJ
lK
RL -
C877
n
10K
ea7S
Fig. 9. Switching Times
375
V
~
.8
.......
V
~o'~IL
F:f
n
Fig. 8. Switching Times
CB76A
k'"
86
84
HIGH
~BE= lDMa
I,
50
I
/
'"
0.0 1
O. I
1.6
C1470A
TYPICAL 530% eTA
~V
25
/
Ree""
V-
1.4
""o~l;.~
O. 1
RBe = 1 MSl
1.2
a
I
~
Fig. 5. Normalized CTR vs. Collector
Current
V
V ... V
\
f=
1.0
10
IDa
COLLECTOR CURRENT· rnA
Ie
f--- t,
~
1.0
1.02
~
TYPICAL 530% eTR
105
~
!;
8
1.0
107
.8
1,04
t.:l
..... "
CB73A
Fig. 4. Current Transfer Characteristic
.6
.4
Fig. 3. Collector Current vs. Collector
Voltage
3
0,1
100
IF - mA
.2
VeE - COLLECTOR VOLTAGE
""V
a
1.0
0.1
.0
§ 1.06
NOAMAlIZED TO
II
I'lL V
I~
25
3.0
I
I~/ 2brnA
ca7t
4.0
O. I
50
Fig. 2. Collector Current vs. Collector
Voltage
f=':1=!=I vee
,,~+IOV
\
Ii,
1.0
2.5
veE -COLLECTOR VOLTAGE
Forward Current
10
8
30 rnA
/1 ~ IomA
........,
f
IF (mAl
Fig. 1. Forward Voltage Drop vs.
75
2
'F =2mA
a
~
I
10
_u
100
IF =4mA
15
I
/
"'"o
25
"
125
=> 100
6mA
I,
0
FORWARD CURRENT
I
I
35
"'"
i
8mA
I,
~-
1I '50
I
45
~=>
Mc1230/~55
TYPICAL 530% eTR IF = 1'0 rnA
RBe - OPEN
50
I-
12
175
I
55
1
1. 2
50
75
9
.1
100
.2
.5
1
5
10
20
I
I
10
~
~
"" "'" _r.05
z
...>
0
tZ
~ 10
1\~~
0.1
C89a
~
"Eo
1
tI
o
100
10
1000
Rl - LOAD RESISTANCE -
n
I
I
V
iCE'
1
ca92
25
50
10
I
75
100
T TEMPERATURE (OCI
Figure 8. Dark Current
Figure 7. Non-5aturated Rise and
Fall Times vs. Load Resistance
vs. Temperature
5.1Kn
PULSE
INPUT
IF'" 1 rnA
ca95
Figure 10. Logic Interface
10
/
,
10
1.0
100
IC - COLLECTOR CURRENT - rnA
Figure 6. Normalized CTR
vs. Collector Current
13
fp..\.\..
z
~
50
50 100
,
1
/,?-f~":,.
NOTES
..... 1-'
o
10
I
I
See MCA230 for circuits
/'
1.0
vs. Forward Current
[l
PULSE
INPUT
IF'" 1 rnA
l/V
Figure 5. Forward Voltage
Vee" 5V
100
eBBB
Figure 3. Collector Current
vs. LED Current
IF - FORWARD CURRENT - rnA
caS9
j
;;
10
IF - FORWARD CURRENT - rnA
"IJ~
'II V(
/
TA = 25"C
~
1.0
CB87
2.0
TA"' +1000
1.0
,.
0.1
0.1
125
°c
.....-
.....-
Temperature
~
TA=25°C
100
f..'.'25].
1/
Figure 4. Saturation Voltage
VS.
75
'111B-
1.
a
25
50
.9
3.0
TA
I
-25
25
-
NORMALIZED TO
Ic =0.5 rnA
VCE -SV
~ 1.0
2
TA-AMBIENTTEMPERATURE-OC
I
I
1.3 -
>
o
3
0
-50
I
U
4.0
e>
IF=l'mA
4
I
1.0
0
--
Figure 2. Collector Cu"ent
vs. Ambient Temperature
9
>
z
~
--
rnA
-25
0
ai"--.. ........
.........
7
'"
0
TA - AMBIENT TEMPERATURE -
eBBS
Figure 1. Collector Current
vs. Collector Voltage
>
13
VeE =5V
NORMALIZED TO 100% AT 2SoC_
10%
VeE - COLLECTOR VOLTAGE - V
,../
<: ~b~l~
LI
10
t-
I
2mA
1 mA
~
/
""cr 100%
5mA
40
I
E
I
t-
6~A
0
"
I
7mA
70
VCE = 1.0V
..
i
~
ao
~
100
9mA
12.
"
C893
ca91
OPTICALLY ISOLATED LOGIC GATE
HIGH CMR, HIGH SPEED
PACKAGE DIMENSIONS
I,
DESCRIPTION
TYPE NUMBER
, , 5 Dmer',
--:~~g-l~:;~-~--
MCL2601
ULRECOGNITION
~I~ III
iliU
~ ==---'---
of
. 007 (.18mm!
.013 (.3Jmm)
The MCL2601 is an optoisolator which combines a
GaAsP LED as the emitter and an integrated high gain
mUlti-stage high speed photo-detector. The output of
the detector circuit is an open collector, Schottky
clamped transistor capable of sinking 25mA (max.).
A Faraday shield integrated on the photodetector chip
reduces the effects of capacitive coupling between
the input LED emitter and the high gain stages of the
detector. This provides an effective common mode
transient immunity of 1000V/I.lS or equivalence of 300V
P.P. sinusoid at lMHz .
The circuit is packaged in a plastic 8-pin mini-DIP
designed to provide for 3000V D.C. voltage isolation.
FEATURES
•
•
•
•
•
DIMENSIONS IN INCHES AND (MILLIMETERSI
Cl589
TRUTH TABLE
(Positive Logic)
Input Enable Output
H
H
L
H
L
H
H
L
H
H
L
L
v,
A 0.01 to O.lI.lF
bypass capacitor
must be connected
between pins 8 and 5.
(See note 1)
Cl588
1:1
•
•
•
•
•
High speed - 10 Mbs. typical
Internal shielding - High common mode rejection
High common mode transient immunity 1000 V/I.lS minimum
TTL compatible
Low input current
Specified characteristics over temperature:
O°C to lO°C
Output - strobable
UL recognized (File #50151)
High input to output isolation: 3000 V dc withstand test voltage
Pin for pin compatible to Hewlett Packard's
HCPL-2601
VDE approval applied for
APPLICATIONS
• Isolated line receiver
• Microprocessor system interface
• Data transmission isolation
• Digital isolation for A/D, D/A circuits.
• Ground loop elimination
• Instrument input/output isolation
• Replacement for pulse transformer
Fig. 1. Equivalent Circuit
ABSOLUTE MAXIMUM RATING (between O°C and lO°C)
Storage Temperature . . . . . . . . . . . -55°C to +125°C
Operating Temperature . . . . . . . . . . . O°C to +lO°C
Lead Solder Temperature. . . . . . . .. 260°C for lOS
D-C/Average Forward Input Current . . . . . . . 20mA
Enable Input Voltage, (V E)
(Not To Exceed Vee By More Than 500mV) ... 5.5V
Reverse Input Voltage . . . . . . . . . . . . . . . . . . 5.0V
Reverse Supply Voltage (-Vee! . . . . . . . .. -500mV
Supply Voltage, (Vee! .... l.OV/l Minute Maximum
Output Current, (10) . . . . . . . . . . . . . . . . . . 25mA
Output Voltage, (Va) . . . . . . . . . . . . . . . . . . . l.OV
Collector Output Power Dissipation . . . . . . . . 40mW
51
I
MCL2601
RECOMMENDED OPERATING CONDITIONS
SYMBOL
Input Current, Low Level
Input Current, High Level
Supply Voltage, Output
Enable Voltage Low Level
Enable Voltage High Level
Operating Temperature
Fan Out (TTL Load)
MIN.
MAX.
UNITS
o
250
15
5.5
0.8
Vcc
70
p.A
mA
*6.3
4.5
o
2.0
o
V
V
V
°c
8
*6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is
5.0mA or less.
ELECTRICAL CHARACTERISTICS (TA = O°c to 70°C Unless Otherwise Noted)
PARAMETER
SYMBOL
MIN.
-TYP.
MAX.
UNITS
High Level Output Current
10H
.02nA
250
p.A
Low Level Output Voltage
VOL
.34
0.6
V
High Level Supply Current
ICCH
10
15
mA
Low Level Supply Current
IccL
15
18
mA
Low Level Enable Current
IEL
-1.5
-2.0
mA
High Level Enable Current
High Level Enable Voltage
Low Level Enable Voltage
IEH
VEH
VEL
VE
8 VR
CIt:!
-1.0
0.8
mA
V
V
Input Forward Voltage
Input Reverse 8reakdown Voltage
Input Capacitance
Input Diode
Temperature Coefficient
I nput·Output
I nsulation Leakage Current
Resistance (I nput to Output)
Capacitance (I nput to Output)
2.0
1.55
1.75
30
V
V
pF
-1.4
mvtC
5.0
I:1VF /I:1TA
1.0
11- 0
R1_Q
1012
0_6
CI- O
p.A
n
pF
TEST CONDITIONS
Vcc = 5.5V, Va = 5.5V
IF = 250p.A, VE = 2.0V
Vcc = 5.5V, IF = 5mA
VE = 2.0V, 10L = 13mA
Vcc = 5.5V, IF = OmA
VE = 0.5V
Vcc = 5.5V, IF = 10mA
V E = 0.5V
Vcc = 5.5V, V E = 0.5V
Vcc = 5.5V, V E = 2.0V
Vcc = 5.5V, IF = 10mA
Note: 11
IE = 10mA, T/!, = 25°C
IR = 10p.A, TA =25°C
V E =O,f-1MHz
IF = 10mA
Relative Humidity - 45%
TA =25°C,t=5s
V I _O = 3000 VDC
Note: 10
VI_O" - 500V, Note: 10
f = 1MHz, Note: 10
*AII typical values are at Vcc = 5V, TA = 25°C.
SWITCHING CHARACTERISTICS (TA = 25°C, Vcc = 5.0V)
PARAMETER
Propagation Delay Time
(For Output High Level)
Propagation Delay Time
(For Output Low Level)
Output Rise Time (10-90%)
Output Fall Time (90-10%)
Enable Propagation Delay Time
(For Output High Level)
Enable Propagation Delay Time
(For Output Low Level)
SYMBOL
MIN.
TYP.
MAX.
UNITS
tpLH
48
75
ns
tpHL
48
75
ns
tr
tf
30
14
ns
ns
tELH
25
ns
tEHL
14
ns
Common Mode Transient Immunity
(At Output High Level)
CM H
1000
10,000
v/p.s
Common Mode Transient Immunity
(At Output Low Level)
CM L
-1000
-10,000
v/p.s
52
TEST CONDITIONS
RL = 350n
C L 15pF
IF =7.5mA
Notes 2, 3,4 & 5, Figure 8
=
IF =7.5mA
V EH = 3.0V
VEL = OV
RL = 350n, C L = 15pf
Notes 6 & 7, Figure 9
VCM = 50V (Peak)
IF = OmA, VON (Min_) = 2.0V
RL = 350n, Note 9
Figure 13
VCM = 50V (Peak)
IF = 7.5mA, VOL (Max.) = 0.8V
RL = 350n
Note 8, Figure 13
MCL2601
TYPICAL CHARACTERISTIC CURVES (25°C Free Air temperature unless otherwise noted)
.s .--.--,---.--,-----,---,
0 "===f==!===l==I==f==l=:;2l
1 1..6r:
~~'"
.41--- Vee'" S.SV t_-t--+--Y/'--1
...
.2
r - ~~ =;. g~
~ ,04
Vee = 5.5V
.7
~--t-_+-+--I ~E == 5~OO~A
-
~o .6~--t-_+-+-t_-.-_+-4
L
IF'" 250JlA
~06
B
~
~~~~~~~~~I=~~~
>
~
I-
~ .02~-+-~~~~-~-+-~-4
.5~--t-~-+-t_--t-~-4
10 = 16mA--.,.
10 = 12.8mA
.4~~~~~~~~~~~~~
5~3~
~:I:.006~
.OlC:=i~~=$==~=i=:t=~
~
.2 ~--t---'!','-·r6::..4::.m:,A'--~~-+",'-.__i'_.6::.m::.A'j
~ .004I-V-7''I--~-+-~--+--t--I
9.0
V,~.5.0) . _
B.O
>
~ 7.0
"~
TA =
40
t:;
~ 4.0
=>
RL = lKn
~ 3.0
-;J
'--
,\RL = 350n
2.0
.0
C1613
TEMPERATURE (TA • eCI
C1598
Fig. 3. Low Level Output Voltage vs.
Temperature
Fig. 2. High Level Output Current "'.
Tempe/ature
I
6.0
o
> 5.0
\l
1.0
~.002 F--+-~--+--~-+-~-4
- .001 L-L_-L_..L_L-L_-L_-'
10
20
30
50
60
70
O~-70CC
~
1.0
2.0
3.0
4.0
5.0
FORWARD INPUT CURRENT (IF, mAl
6.0
C1602
Fig. 4. Output Voltage vs.
Forward Input Current
10. 0
<
.§
BO~-+--~--+---t_-+--~--4
f-
~
~ 70~-+--~--+---t_R,~.~3~5_OQ~~
~
/
TA = 2SOC
1.0
B
f-
~
~
~
I
/
1
~
50
~
40
f2
AL =4Kn_
-
--
:~:
=-
--~:_ R~ ;:-~5;
-= t-="
RL _ 4Kn
~
30~-+~~--~--r--+--~--4
,
20r--+---r--+---r--+---r~
::::
-
60
AL = 1Kn
101------t_----+-----+-----,
.0 1
1
/
1.4
1.2
10
1.6
VF, FORWARD INPurVOLTAGE (V)
C16Da
C1604
Fig. 6. Propagation Delay vs.
Temperature
Fig. 5. Forward Input Current vs.
Forward Input Voltage
15
IF - PULSED INPUT CURRENT (mAl
20
C1603
Fig. 7. Propagation Delay vs.
Pulse Input Current
"c..is!lraycircuilt.llpacitance,includlng
Ihe iCope probe and is approximaleiy 15pF.
C1592
'C" iswayCi'c~iICapaciIBnce.incl"djn9thBscOpeprObe.
IOlal of approximately 15pF
C1596
j-------~== ',: :::::
,NPUT
I
(IF)
I
I PHL - :
:_
-_I
_~ ___
lVol
I
OUTPUT
lVol
IpLH; _ _
::f
ou;~i
90%
1.5V
I
-\-------;
I
I
I
I
10%
I
I
- : ~ 1.=...----=-=..1 ~ :-C1S91
Fig. 8. Test Circuit
tPHL. tPLH. tr• and tf
Fig. 9. Test Circuit
tEHL and tELH
53
MCL2601
TYPICAL CHARACTERISTIC CURVES (25°C Free Air temperature unless otherwise noted)
70
t.----===y"".5.0~=
-== t,--,_ _ IF =7.5mA_
~
=w2 300r--+--4-~r--+--+-~r-~
i\ = 4KII
~200r--+~~~---t--~~==~
~
;£,
~:,. 80~~!!~~~~~~~~~
30
f\." 350n
40
o
~
40
w
.i
__
i\ -4KII
_I
_0
50
~ 30
~ '-!.~ ~
gg --
20
~,
20 r--+-'-+-~---+-i\ . IK.!:..:I
10
'0C::±::±:~L:~~'~35~on~,~~~
o
10
20
30
40
50
60
TA - TEMPERATURE 1°C)
Fig. 10. Rise and Fall Time
Temperature
70
1\----''"
vc",-./
Tv
~
6K
~:~~g
~
~
>>-
Z
~
----VO(MAXI
-
VOL = a.BV
~
O.sv
--
~
SWITCH pos, (81. I, ~ 7.5mA
Fig. 13. Test Circuit Common
Mode Transient Immunity
~ 3Kr-~-r-+-+-+--r-+-+--r~
~ 2K f-+I'--4.....r-t-++-+-+~---l
8, 1K f-+-++-+--+--I--t-++~
1.2
20
ron. iKn.
30
40
~
Vee
~
>- 1.1
0
"z
"u
1.0
r
n - r--
50
60
70
Ct607
~
w
>
>=
g
COMMON MODE TRANSIENT AMPLITUDE IV)
CI590
='
5.0V
r--+---t--~r-~ ~~~ : ~. ~~ IFH
=7.5mA
~~--+~~~~:~~
' " r-....
VCM
=
-
50V
0
0
100 200 300 400 500 600 700 800 900 1000
Fig. 12. Common Mode Transient
Immunity vs. Common
Mode Transient Amplitude
CML
1.3
~
Q
~ 4K~~-r-+-+-+--r-+-+--r~
-
r-- r- T"1' R, -
1.4
;;
w
~ 5Kr;+-++-+--+--~r-'-+~
VCM
TELH.I\. = 350n
::>
~ 8K H+-++-+--+---1 ~~: i.·~~A ~~H"2~;vA
"",,,-f-:::: ~
TElH,If\.=,kn
V~-
Fig. 11. Enable Propagation Delay vs.
Temperature
VS.
7K
4Kn
TA - TEMPERATURE (Oe)
~ 9Krt+-~-+-+-+--r-L-~-r~
15
f\
........-r-
10
~'0KrT'-.--r-r-'--r-r-'--r,
t5
TELH •
C1B01
;
-
IF =7.SmA
~
~
100
~
a:
Vee = S.OV
"'3.eV
=oV
>- 60 r-~EH
VEL
.9
..
.7
10
20
30
40
50
TA - TEMPERATURE 1°C)
60
70
C1595
Fig. 14. Relative Common Mode
Transient Immunity
vs. Temperature
NOTES
1. The Vcc supply voltage to each MCL2601 isolator must be bypassed by a 0.01p.F capacitor or larger. This can be either a
ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible
to the package Vcc and GND pins of each device.
2. tpHL - Propagation delay is measured from the 3. 75mA level on the LOW to HIGH transition of the input current pulse
to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
3. tpLH . Propagation delay is measured from the 3.75mA level on the HIGH to LOW transition of the input current pulse
to the 1.5V level on the LOW to HIGH transition of the output voltage pulse.
4. tf
. Fall time is measured from the 10% to the 90% levels of the HIGH to LOW transition on the output pulse.
5. tr
. Rise time is measured from the 90% to 10% levels of the LOW to HIGH transition on the output pulse.
6. tEHL . Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input
voltage pulse to the 1.5V level on the HIGH to LOWof the output voltage pulse.
7. tELH· Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input
voltage pulse to the 1.5V level on the LOW to HIGH transition of tlJe output voltage pulse.
8. CML . The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low
output state (i.e., VOUT 0.8V). Measured in volts per microsecond (V1/lS).
9. CMH - The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high
state (i.e., VOUT 2.0V). Measured in volts per microsecond (V1/lS).
<
>
Voltslmicrosecond can be translated to sinusoidial voltages:
=«d~~M~
10.
11. Enable
Input
54
VI/lS
Max. = rrfCM VCM (p.p.)
Example:
VCM = 318Vpp when fCM = 1MHz usingCML and CMH = 1000VI/lSdata sheet specified minimum.
. Device considered a two-terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted
together.
. No pull up resistor required as the device has an internal pull up resistor.
OPTICALLY ISOLATED
TRIAC DRIVER
I
MCP3009
MCP3010
MCP3011
DESCRIPTION
PACKAGE DIMENSIONS
I
Ll!::;o==r=r=;~
y Y y
The MCP3009, MCP3010 and MCP3011 are optically
isolated triac driver devices. These devices contain a
GaAs infrared LED and a light activated silicon
bilateral switch, which functions like a triac. This
series is designed for interfacing between electronic
controls and power triacs to control resistive and
inductive loads for 120 VAC operations.
CI240
FEATURES
SYMBOL
-r=r r
1"r
C1240
Anode
3
'-
NOTES
15
.014
0.36
.325
.070
.110
.022
.085
8.26
.175
4.45
~~f-K
m6
Cathode 2
9.27
6.86
4.06
15
'''""~m1
1..:...-
MAX .
.365
.270
.160
•
•
.3DORef. 7.62 Ref .
~
PlANE
MIL.
INCHES
MAX.
1.78
2.79
0.56
2.16
•
•
•
•
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVERALl.. INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE
5. MINIMUM 0.100 INCH
Main Terminal
5
6~a~g~v~~~~:~:rate
4
Main Terminal
Fig. 1. Equivalent Circuit
Low input current required (typically 5mA MCP3011)
Minimum commutating dv/dt is specified at 0.1 V/
J.lsec
Pin for pin replacement for the MOC3009, 3010
and 3011 devices
High isolation voltage - minimum 7500 VAC peak
Underwriters Laboratory (U L) recognized - File
E50151
VDE approval applied for
APPLICATIONS
•
•
•
•
•
•
Triac driver
Industrial controls
Traffic lights
Vending machines
Motor control
Solid state relay
C1703
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature .... . . . . .. -55°C to 150°C
Operating temperature . . . . . . . . . _40°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . • . . . 330 mW
Derate linearly from 25°C ......•... 4.0 mW/oC
Surge Isolation voltage. • . . . . . .. 7500 VAC Peak
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 J.ls pulse, 300 pps) . . . . . . . . . . . . . . . . . 3.0 A
Power dissipation 25°C ambient . . . . . . . . 100 mW
Derate linearly from 25°C . . . . . . . . . 1.33 mW/oC
OUTPUT DRIVER
Off-State Output Terminal Voltage ..... 250 Volts
TA = 25°C ... 100 rnA
On-State RMS Current
(Full Cycle, 50 to 60 Hz) TA = 70°C .... 50 mA
Peak Nonrepetitive Surge Current . . . . . . . . 1.2 A
(PW = 10 ms, DC = 10%)
Total Power Dissipation @ TA = 25°C ..... 300 mW
Derate above 25°C .... _ . _ .... _ .4.0 mW/oC
55
MCP3009 MCP3010 MCP3011
ELECTRO·OPTICAL CHARACTERISTICS (25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
LED Trigger Current
(Current Required MCP3009
to latch output) MCP3010
MCP3011
(J
0
Holding Current
SYMBOL
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
1FT
15.0
10.0
5.0
30
15
10
mA
IH
-
200
-
pA
Either direction
Main terminal
voltage = 3.0 V
Critical Rate of Rise of
Off-5tate Voltage
dv/dt
-
10.0
-
VIps
Cl
Static dv/dt
(see Figure 5)
Critical Rate of Rise of
Commutating Voltage
dv/dt
0.1
0.2
-
VIpS
II:
Commutating dv/dt
I LOAO = 15 mA
(see Figure 5)
Isolation Voltage
Visa
5300
VAcRMS
Visa
7500
VACPEAK
Isolation resistance
Riso
10 11
Isolation capacitance
Clso
"........ -....
t.J
i
0- 400
I
~
0.1 0.2 0.5 1 2
5 10 20 50100
FORWARD CURRENT - IF (mA)
C16S6
V
1.1
N
I'
:::;
'" 0.9
::;
a:
Ii
I'
oz
~
o. 7
......-
O. 5
-40 -20
0
20 40
60 80 100
TA - AMBIENT TEMPERATURE ('C)
C16BB
Fig.3.
On-State Characteristics
dv/dt TEST CIRCUIT
I'
ow
-BOO
-14 -10 -6.0 -2.0 2.0 6.0 10
14
VTM - ON-STATE VOLTAGE (VOLTS)
C1687
Fig. 2. Forward Voltage Drop
vs. Forward Current
STATIC -
.....
~
V
I
w
a:
a:
I
1.3
~idth LSO ~ /'
Fig. 4. Trigger Current vs.
Temperature
COMMUTATING - dv/dt TEST CIRCUIT
Rin
zW
0-
o
~=
WVpack = 21ff xl.414 Vrms
~=
= 8,88 f Vrms
8.88 f Vrms
C1689
Fig. 5.
dvldt Test Circuits
12.0
U)
Static
~
I
I
~
.Y
V
6.0
V
4.0
i.--"
V
0.20 ~
(!)
0.16
1 1
~
0.12 ::;
0
t.J
O.OB
V'n =130 RJS
Te~t Circuit in Figure 5
2.0
o
0.4
RL -
o.S
1.2
1.6
LOAD RESISTANCE (kO)
z
~
::>
::;
Com mutating
I
I
10
~
1
10.0
() S.o
~
0.24
I
~
~
0.04
2.0
...
~-4.
.
;;; 8
~
en
I
6
...
J'-.
2
o
-
z
>=
0.12 ;;;
1''1--- J
::>
::;
::;
...1
0. 08
TSOo" 1'.
L
1""....
Static dv/dt
Commutating dv/dt
Test Circuit in Figure 5
8
I
0.04 ~
o
"
50
25
75
100
TA - AMBIENT TEMPERATURE ('CI
C1691
C1690
Fig. 6 dvldt vs.
Load Resistance
~
(!)
I" I"-
II,
4
;;
""
;;;
0.16
~';;:~~:h
~
()
0.20
I
I
Fig. 7. dvldt vs.
Temperature
57
MCP3009 MCP3010 MCP3011
TYPICAL-ELECTRICAL CHARACTERISTIC CURVES
(25°C Temperature unless otherwise specified)
;;;
lw
(!)
~o
"'
a.
::;;
dv/dt 0.2 V/~s
Test Circuit in Figure 5
dv/dt B.9 Vinf
RL 1 kll
~
1.5
.....
II:
II:
100
I!ill[ 2h U~
r--..
t--
zw
.....
:>
0
w 1.0
>
o
(!)
II:
w
~
2.0
:>
10
(Jl
111111111111
~ffiilltffi_
'"a.
«
w
.5
o
1.0
10
100
1000
10,000 100,000
MAXIMUM OPERATING FREQUENCY (Hz)
0.01
0.1
1.0
10
100
PW - PULSE WIDTH {msi
f -
C1696
C1692
Fig. 9. Maximum
Nonrepetitive Surge Current
Fig. 8. Commutating dv/dt
vs. Frequency
TYPICAL APPLICATION CIRCUITS
'6
180
180
120 V
60 Hz
MCP3009
MCP3010
MCP3011
MCP3009
MCP3010
MCP3011
C1693
Fig. 11. Inductive Load With
Sensitive Gate Triac
1
180
MCP3009
MCP3010
MCP3011
0.2.F
(15 mA < IGT < 50 mAl
Fig. 12. Inductive Load With
Non-Sensitive Gate Triac
58
120 V
60 Hz
C1695
120 V
60 Hz
Cl
(IGT $15 mAl
Fig. 10. Resistive Load
Rin
O.I.F
2.4 k
C1694
OPTICALLY ISOLATED
TRIAC DRIVER
I'
MCP3020
MCP3021
MCP3022
DESCRIPTION
PACKAGE DIMENSIONS
-10
lei
~:~I
L
2
-\1,
---:.1
t[J,
0
,
3
C1240
T
~
L
r- 1"r-
SYMBOL
' '"""f}-m1
~
C1240
Anode
~jj~K
rn6
3
MAX.
CI240
MIL.
MAX.
FEATURES
NOTES
9.27
6.B6
4.06
15
.JOORef. 7.62 Ref.
,014
.325
.070
.110
.022
.OB5
0.36
8.26
.175
4.45
1.78
2.79
0.56
2.16
M
N
C th d 2.......
a 0 e.,.
INCHES
.365
.270
.160
15
~
PLAN'
The MCP3020, MCP3021 and MCP3022 are optically
isolated triac driver devices. These devices contain
a GaAs infrared LED and a light activated silicon
bilateral switch, which functions like a triac. This
series is designed for interfacing between electronic
controls and power triacs to control resistive and
inductive loads for 240 VAC operations.
Low input current required (typically 5 rnA MCP3022)
CI Minimum commutating dv/dt is specified at
0.1 V//J.sec
CI Pin for pin replacement for the MOC3020 and
MOC3021
CI High isolation voltage - minimum 7500 VAC peak
I> Underwriters Laboratory (U L) recognized File E50151
• VDE approval applied for
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVEAALllNSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE
5. MINIMUM 0.100 INCH
M.;n Term;n.'
5 Triac Driver Substrate
DO NOT Connect
4
•
APPLICATIONS
•
European applications for 240 VAC
Triac driver
• Industrial controls
11:1 Traffic lights
II Vending machines
CI Motor control
III Solid state relay
CI
Main Terminal
Fig. 1. Equivalent Circuit
C1703
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature ... . . . . . .. -55°C to 150°C
Operating temperature . . . . . . . . . _40°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . . . . 330 mW
Derate linearly from 25°C . . . . . . . . . . 4.0 mW/oC
Surge Isolation voltage . . . . . . . . . 7500 VAC Peak
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60 rnA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward cu rrent
(1 /J.s pulse, 300 pps) . . . . . . . . . . . . . . . . . 3.0 A
Power dissipation 25°C ambient . . . . . . . . 100 mW
Derate linearly from 25°C . . . . . . . . . 1.33 mW/oC
OUTPUT DRIVER
Off·State Output Terminal Voltage ..... 400 Volts
TA = 25°C ... 100 rnA
On·State RMS Current
(Full Cycle, 50 to 60 Hz) TA = 70°C .... 50 rnA
Peak Nonrepetitive Surge Current . . . . . . . . 1.2 A
(PW = 10 ms, DC = 10%)
Total Power Dissipation @ TA = 25°C ..... 300 mW
Derate above 25°C . . . . . . . . . . . . . 4.0 mW/oC
59
MCP3020 MCP3021 MCP3022
ELECTRO-OPTICAL CHARACTERISTICS (25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
tJ
a
.. zCI
,,-
~I-
,,<[
a:
SYMBOL
MIN.
LED Trigger Current
(Current Required MCP3020
to Iatch output) MCP3021
MCP3022
TYP.
MAX.
UNITS
1FT
-
Holding Current
IH
Critical Rate of Rise of
Off·laate Voltage
30
15
10
rnA
Main terminal
voltage = 3.0 V
-
15
B
5
-
200
-
pA
Either direction
dv/dt
-
15
-
VIps
Static dv/dt, TA = B5°C
(see Figure 4)
Critical Rate of Rise of
Com mutating Voltage
dv/dt
0.1
0.2
-
VIpS
Commutating dv/dt
ILOAO = 15mA
(see Figure 5)
Isolation Voltage
Visa
5300
VAcRMS
Viso
7500
VACPEAK
Isolation resistance
Riso
10 11
Isolation capacitance
Clso
Z
a
~..I
0
!!!
ohms
pF
.5
TEST CONDITIONS
Relative humiditY .. 50%,
11-0 .. 10 pA, 5 seconds
Relative humiditY .. 50%,
11-0 .. 10 pA, 5 seconds
VI-O = 500 VDC
f= 1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
W
a
is
0
I:::J
...
~
I-a:
:::JO
rJ;
:::Jw
CHARACTERISTIC
SYMBOL
Forward voltage
Forward voltage temp.
coefficient
Reverse breakdown voltage
Junction capacitance
VF
BVR
CJ
MIN.
3.0
60
MAX~
UNITS
1.3
1.50
V
-l.B
25
50
65
.35
10
rnVI"C
V
pF
pF
pA
Reverse leakage current
IR
Peak Blocking Current,
Either Direction
IORM
-
10
100
nA
Peak OnoState Voltage,
Either Direction
VTM
-
2.0
3.0
Volts
01;;
a
TYP.
Note 1. Test voltage must be applied within dv/dt rating.
TEST CONDITIONS
IF =60mA
IR= 10pA
VF = 0 V, f = 1 MHz
VF=lV,f=lMHz
VR =3.0V
VORM = 400 V, Note 1
ITM = 100 mA Peak
MCP3020 MCP3021 MCP3022
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Specified)
o
~
+800
<'E
a:
a:
W
S
en
0
j
Z
0-400
-800
a:
a:
1.0
()
0.9
::J
~
I
~
"""I"
a:
V
I
::;;
Z
w
I
I
1:"
V
'\
1.1
I-
./
()
1.2
I
I
::J
1.3
a:
az
/
~+400
w
1.4
:J
«
:2
/
i'
:--....
r-.... .....
.......
r-.... .......
0.8
r--.
(!)
~ 0.7
I 0.6
f-
V
-3.0 -2.0 -1.0
0
1.0 2.0 3.0
VTM - ON-STATE VOLTAGE (VOLTS)
C1711
-40 -20
o 20 40 60 80 100
TA - AMBIENT TEMPERATURE (OC)
.!!:
C1712
Fig. 2.
on·Sta te Charac teristics
Fig. 3. Trigger Current vs.
Temperature
TEST CIRCUITS FOR dv/dt MEASUREMENTS
.-----.6
~{
1-----,
2
MCP3020
MCP3021
MCP3022
'------'4
dv
dt
RL
= WVpack = 271"f x1.414 Vrms
= 8.88 f Vrms
Fig. 4. Static dv/dt
Vee
.-------,6
~--~~----~
~---------,
2 MCP3020
r---~ MCP3021
MCP30221--...JvVv_ _....I
'------'4
RL
dv
dt = 8.88 f Vrms
C1689A
Fig. 5. Commutating dv/dt
61
62
PHOTO seR OPTOISOLATORS
I
MCS2
MCS2400
PACKAGE DIMENSIONS
ro
[:J
Lo
1
DESCRIPTION
1
rt[lC
4-
I'
,
2
--L
t::F
3
SEATING
PLANE
@
MOOI 1
CATMODI 2
31
• DATI
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
• AfrtODi
2. FOUR PLACES
• CATHODI
~: ~~::t~~~~~~lEE~T~;~~'~~DE FROM
THE SEATING PLANE
r..MINIMUMo.'ODINCH
C1339
The MCS2 and the MCS2400 devices consist of a photo
SCR coupled to a gallium arsenide infrared diode in a
six lead plastic DIP package. The MCS2 has a blocking
voltage rating of 200 volts while the MCS2400 has a
400 volt rating.
FEATURES
• Built-in memory
• AC switch (SPST)
• High current carrying capability
(pulsed condition)
• Plastic dual-in-line package
• High isolation resistance - 10" n
• Compact, rugged, light-weight
• Low coupling capacitance - 1.0 pF typical
• MCS2400, UL recognized (File E50151)
• High isolation voltage
VISO = 2500 V RMS, 1 minute
• VDE approval applied for
APPLICATIONS
The Photo SCR coupled pair is intended for applications where complete electrical isolation is required
between low power circuitry, such as integrated circuits, and AC line voltages. It provides high speed
switching of relay functions. Because of its bistable
characteristics, it lends itself for use as a latching relay in direct current circuits.
ABSOLUTE MAXIMUM RATINGS
Storage temperature -SSoC to lS0°C
Operating temperature -SSoC to 100°C
Lead soldering time @ 260°C 7.0 seconds
LED (GaAs Diode)
Power dissipation @ 2SoC ambient . . . . . . . . . 90 mW
Derate linearly from 25°C . . . . . . . . . . . . 1.2 mW/C
Continuous forward current . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3.0 V
Peak forward current . . . . . . . . . . . . . . . . . _ O.S A
(SO j.Ls pulse, 120 pps)
COUPLED
Isolation voltage . . . . . . . . . . _ . _ ...... 3S50 VDC
Total package power dissipation .... _ ..... 250 mW
Derate linearly from 25°C ...•....• _ .. 3_3 mW/C
DETECTOR (Photo SCR)
Power dissipation @ 2SoC ambient . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . . . 2.67 mW/C
MCS2 DC anode current ... _ . . . . . . . . . . . 150 mA
MCS2400 DC anode current . . . . . . . . . . . . . 100 mA
Peak pulse current (100 j.Ls, 120 pps) . . . . . . . . 1.0 A
Average gate current . . . . . . . . . . . . . . . . . . . 25 mA
Reverse gate current . . . . . . . . . . . . . . . . .. 1.0 mA
MCS2 anode voltage (DC or peak AC) . . . . . . . 200 V
MCS2400 anode voltage (DC or peak AC) . . . . . 400 V
63
MCS2 MCS2400
ELECTRO-OPTICAL CHARACTERISTICS (25°C Free Air Unless Otherwise Specified)
MCS2
CHARACTERISTICS
MIN.
INPUT DIODE
Forward voltage (V F )
Reverse voltage (V R )
Reverse current (I R)
Junction capacitance (CJ )
MCS2400
TYP.
·MAX.
1.25
1.5
3.0
DETECTOR
Forward leakage current (lFX)
Reverse leakage current ('RX)
Forward blocking voltage (VFXM , VOM )
Reverse blocking voltage (VROM )
On voltage (VTM )
Holding current ('HX)
Gate trigger voltage (VGT )
Gate trigger current ('GT)
.001
'50
10
.02
.02
2.0
2.0
0.5
.98
.16
0.5
19
1.3
.50
1.0
100
5.0
7
14
UNITS
1.25
1.5
V
V
'F = 20rnA
IR = 10/lA
.001
50
10
/lA
pF
V R =3.0V
V=O
.02
.02
2.0
2.0
.98
.16
0.6
23
.50
1.0
100
/lA
/lA
V
V
V
mA
V
/lA
VFX = Rated VFX • RGK = 27kn
V RX = Rated V RX • RGK = 27kn
RGK = IOkn @ 100°C
RGK = 10kn @ 100°C
'T = 100 rnA
RGK = 27kn
V FX = lOa V
V FX = lOa V, RL = 10kn, RGK = 27kn
.01
0.5
1.3
14
5.0
7
mA
/lS
VDC
VRMS
VDC
V RMS
n
3500
2500
4000
3000
3500
2500
4000
3000
Isolation resistance (R lsa )
Isolation capacitance (elsa)
MAX.
400
400
.01
Surge isolation rating
TYP.
3.0
200
200
COUPLED
Turn on current (threshold), (1FT)
t, + td (See note I) = (ton)
Steady state voltage (Visa)
MIN.
10 '2
1.0
lO"
lO"
2
10 '2
1.0
pF
2
TEST CONDITIONS
V FX = 100 V, RGK = 27kn
'F = 30 mA, RGK = 27kn, Vee = 20 V
t::: 1 min.
t = 1 min.
t == 1 sec.
t = 1 sec.
V = 500 VDC
f = I MHz
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free Air Unless Otherwise Specified)
,.5
'00
~ 1. 4
o
~
'z"
I
;:
«
c
~
\f~o;O.;i
'0
"~
-
0
61.
'" ,.,1----
r-
~~
.0
I--""
.2
100,000
10,000
'OA
~......
//1/"
Ii
~
a100 rnA
~
-
~/~50CTEST
I
1.0
,
II
ANODE TO CATHODE VOLTAGE - V
Fig. 3. Anode Current VB.
Anode-Cathode Voltage
50 100
C361
.........
"
r
.1.3
20
10.0
LIMIT MAX.
II"
, mA
64
10
Fig. 2. Forward Voltage v•.
Forward Current
.........« If
lOrnA
"IJ~
I IVi'
5
I
IF - FORWARD CURRENT -",A
~/;;/~ I
_N,
w
,5
C360
Fig. 1. LED Lifetime v•.
Forward Current
§
/
8
TIME - HOURS
, A
TA= +100"
,
.91--""
Tf i2~,C
1000
illlB
r,:'~'. "r.;;.
>
tell -
I
-~
,
TA-
o
......
1ilc
/'
1 .3
,
.0
10
C362
'OOn
lk
10k
RaK-il
Fig. 4, Holding Current v••
Gate-Cathode Resistance
lOOk
C383
MCS2 MCS2400
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (Cont'd)
(2SoC Free Air Unless Otherwise Specified)
30,-,--.....,.----r-----,
I
500
I~
0
r-
1\
RGK = 27kn
~GK~'f'(
1'\
z
9
II
"I'-- ~rKT~nl
0,LO-------2±0~----~30~----~~
I
0.1
C1274
"E
10
50
200
1000
e3S6
Fig. 6. Forward Blocking Voltage vs.
Critical d VIdt
1000
'\
125
2
MINIMUM CRITICAL dV/dt - VOlTS//-ISEC
Fig. 5. Trigger Delav Time vs.
Forward Current (note 1)
150
II
0.5
100
I
RGK " 27kn
I-
~
100
"wc
75
w
"
50
ffi>
25
""
0:
:J
c
z
1'\
'\
~
"
o
o
I
~
1\
\
75
50
25
MCS2
@20DV
10
~
====" #
Ii'
Ikn
27kn
Ikn
I--
MCS2400
_@l400V
I'
100
TEMPERATURE _ °c
--
1.0
A
.0 I
-60
-40 -20
Fig. 7. Continuous Current Rating vs.
Ambient Temperature
20
40
60
Fig. 8. Forward Leakage Current vs.
Temperature
I
9
.8
7
6
5
4
3
- - --r-
100
C3SB
0
I.0
ao
TEMPERATURE - °C
C3S7
I
~
I.0
I
l- t-..:::: t:--
2
r---r--: r-
lakn
t-- 1--20kn
27kn
.1
0
-60 -40
I
.0 I
-20
20
40
TEMPERATURE _ °C
60
80
100
C369
Fig. 9. Gate Trigger Voltage vs.
Temperature
-60 -40
-20
20
40
TEMPERATURE _ °C
60
BO
100
C37C
Fig. 10. Holding Current vs.
Temperature
65
MCS2 MCS2400
TYPICAL CIRCUIT APPLICATIONS
Vee
r - - - - - - - --,
"
I
I
-rn=:
I
VF
I
I
Vow
-
I
I
I
I
I
I
I
I
L___ _
":::"
I
C372A
OPERATING SCHEMATICS
Vee'
MCS2
V,
DC LOAD
RL
+5V
I,
~
CONTROL {
INPUTS
)
'"
VRMS
60-
VSAT
RGK
TTL GATE
C135
RELAY CIRCUIT FOR HALF WAVE A.C. CONDUCTION
NOTES
1. The rise time of the SCR is typically less than 500 nanoseconds.
66
PHOTO SCR OPTOISOLATORS
I
MCS21
MCS2401
DESCRIPTION
PACKAGE DIMENSIONS
[:]
The MCS21 and the MCS2401 devices consist of a
photo SCR coupled to a gallium arsenide infrared
diode in a six lead plastic DIP package. The MCS21
has a blocking voltage rating of 200 volts while the
MCS2401 has a 400 volt rating.
I
Lil=f0~~
FEATURES
SYMBOL
SEATING
r---+--
I~CAHiS
1\1";.';
365
927
NOTES
~t---W- r -
H=-~~t~~
~~: r-,~
~
ANODI 1
• GATE
CATHODE 2 " )
:s
L
I ANDDI
NorES
.. CATHODE
IINSTALLEDPOSITIONOFLEAOCEIIITEAS
2 fOUR PLACES
3.0VERALLINSTALLEDfOSITION
• THESE MEASUREMENTS AAE MAOE FROM
THE SEATING PLANE
5 MINIMUMO.HlOINCH
C1339
• Built-in memory
• AC switch (SPST)
• High current carrying capability
(pulsed condition)
III Plastic dual·in-line package
D High isolation resistance - 1011 n
m Compact, rugged, light-weight
m Low coupling capacitance ... 1.0 pF typical
m MCS21, MCS2401, UL recognized (File #E50151)
• VDE approval applied for
APPLICATIONS
The Photo SCR coupled pair is intended for applications where complete electrical isolation is required
between low power circuitry, such as integrated circuits, and AC line voltages. It provides high speed
switching of relay functions. Because of its bistable
characteristics, it lends itself for use as a latching
relay in direct current circuits.
ABSOLUTE MAXIMUM RATINGS
Storage temperature _55°C to 150°C
Operating temperature _55°C to 100°C
Lead soldering time @ 260°C 7.0 seconds
LED (GaAs Diode)
Power dissipation @ 25°C ambient . . . . . . . . 100 mW
Derate linearly from 25°C . . . . . . . . . . . 1.3 mW/oC
Continuous forward current . . . . . . . . . . . . . 60 rnA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . 6.0 V
Peak forward current (1 fJ.s, 300 pps) . . . . . . . 3.0 A
COUPLED
Isolation voltage . . . . . . . . . . . . . . . . . . 4000 VDC
DETECTOR (Photo SCR)
Power dissipation @ 25°C ambient . . . . . . . . 400 mW
Derate linearly from 25°C . . . . . . . . . . . 5.3 mW/oC
RMS forward current . . . . . . . . . . . . . . . . 300 rnA
Peak pulse current (100 fJ.S, 120 pps) . . . . . . . 1.0 A
Average gate current . . . . . . . . . . . . . . . . . . 25 rnA
Reverse gate current . . . . . . . . . . . . . . . .. 1.0 rnA
Peak forward voltage MCS21 . . . . . . . . . . . . 200 V
MCS2401 . . . . . . . . . . . 400 V
67
MCS21 MCS2401
ELECTRO·OPTICAL CHARACTERISTICS (25°C Free Air Unless Otherwise Specified)
CHARACTERISTICS
MCS21
TYP.
MIN.
INPUT DIODE
Forward voltage (VF)
Reverse voltage (VR )
Reverse current (I R )
Junction capacitance (CJ )
MAX.
1.15
1.5
3.0
10
DETECTOR
Off state current (lDM)
Reverse current (I RM )
COUPLED
Turn on current (threshold),
(1FT)
1.15
1.5
.001
50
10
1.1
.16
0.5
19
150
tlA
1.3
.50
1.0
100
V
V
V
mA
V
tlA
11
mA
VFX = 100 V,
RGK = 27kn
20
mA
VFX = 50 V,
RGK = 10kn
IF = 30 mA, RGK =
27kn, Vee = 20 V
t = 1 min. Relative
humidity 50%
t = 1 min. Relative
humidity 50%
t = 1 sec. Relative
humidity 50%
t = 1 sec. Relative
humidity 50%
1.1
.16
0.6
23
.01
0.5
20
7
Surge isolation rating
Coupled dv/dt, (input to output)
VDM = rated, TA =
100°C, RGK = 10 kn
V RM = rated, TA =
100°C, RGK = 10 kn
RGK = 10kn @ 100°C
RGK = 10kn @ 100°C
IT =300mA
RGK = 27kn
VFX = 100 V
VFX = 100 V, RL =
110kn, RGK = 27kn
50
11
tr + td (See note 1) = (ton)
IF = 20mA
IR =10tlA
VR =3.0V
V=O
tlA
1.3
.50
1.0
100
Turn on current (threshold)
(1FT)
V
V
tlA
pF
150
400
400
.01
TEST CONDITIONS
50
200
200
0.5
Steady state voltage (Vise)
UNITS
3.0
.001
50
Forward blocking voltage (VOM )
Reverse blocking voltage (VAM )
On voltage (VTM )
Holding current (lHX)
Gate trigger voltage (VGT )
Gate trigger current (lGT)
MCS2401
TYP.
MAX.
MIN.
7
I.ls
3500
3500
VDC
2500
2500
VRMS
4000
4000
VDC
3000
3000
VRMS
500
500
V//J.s
See figure 11.
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
•
1.
'00
~ 1. 4
o
::;,
.3
"z,
o
~
;i
\f~
a
1
f-
t1,U r-
Ieo
"-
,
r'00
TA =25"C
1000
10,000
Fig. 1. LED Lifetime vs.
Forward Current
lA·1111L;.
5> ' .2
1W.'.,2'}
'" ,.,L.-o
~
~
,;
I
TIME - HOURS
'"
;!
TA- +100"
,
.0
V
I
I
,
68
-
\ .......
.8
100,000
C360
.1
.2
.5
1
2
5
V
"!J~
ill
10
20
50 100
I" - FORWARD CURRENT - rnA
Fig. 2. Forward Voltage vs.
Forward Current
C361
MCS21 MCS2401
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (Cont'd) (25°C Free Air Unless Otherwise Specified)
lOA
~....
/Iv/
1A
f-
a~
/;
100 mA
-
f'lj/~5"C
TEST
I
1.0
~~t?
II
II
II
f-f-f-
10mA
I
"-
«
LIMIT MAX.
E
I
x
i;lu/,<; I
w
""«z
30r-,-----,-------,-------,
10.0
"
IfI
z
"'"
I
'?
I
oL-----~~------~------~
.0 1
1 rnA
ANODE TO CATHODE VOLTAGE - V
10
lOQu
10
.3
C362
1000
300
«
"
200
f-
~
100
~
50
""
E
I
1,\
t--
1\
~
20
~
10
AGK
1"......
~'"
~
200
~
150
«
~
fi'
I
2
10
50
~IKTn
MINIMUM CRITICAL dv/dt-
200
100
100
25
50
x
\
MCS240Q
"\.
..., p-
-40
.7
.
>
I
:!i
.6
.5
--
'-..
r-.
.......
.4
.3
-
1
-: r.:::: t:-- r.:::-
---
.2
1
o
-60 -40
-20
20
40
TEMPERATURE -'C
60
80
100
C369
Fig. 9. Gate Trigger Voltage vs.
Temperature
40
60
C
80
100
C368
I
-f-
x
20
Fig. 8. Forward Leakage Current vs.
Temperature
1.0
"
-.
-20
TEMPERATURE -
.9
B
lkO
ur
C3S7
10
1.0
~@400V
-
.0 1
-60
100
75
1.0
1""
Fig. 7. Continuous Current Rating vs.
Ambient Temperature
Fig. 6. Forward Blocking Voltage vs.
Critical d VIdt
.."
I
TEMPERATURE - 'C
C366
V
27kn
MCS2.M lkn
@20QV ~
27kn
~
o
o
"GK
10
"\.
\
50
1000
VOlTS/~SEC
'\
~
I I I
0.5
'\.
250
"u
27kn
cG" I .~01(
fi'
1
0.1
=
40
C1274
Fig. 5. Trigger Delav Time vs.
Forward Current (note 11
Fig. 4. Holding Current vs.
Gate·Cathode Resistance
500
>
30
C363
Fig. 3. Anode Current vs.
Anode·Cathode Voltage
s
20
lOOk
10k
lk
.0 1
-60 -40
--
~
r--
IOkn
r-- r--2Okn
~
1
-20
20
40
TEMPERATURE -"C
60
80
100
C370
Fig. 10. Holding Current vs.
Temperature
69
MCS21 MCS2401
TYPICAL TEST CIRCUIT
f-
Vp
T
r
.63 Vp
t *
-ft7\1
.-.j 1_
Vp = 800 Volts
tp = .010 Seconds
f = 25 Hertz
TA = 25°C
+100 V AC
1O01l
MSC21
I--
+
I
...
IL _______
... _
10K
1I
dv/dt
tp
OSCILLOSCOPE
EXPONENTIAL
RAMP GEN.
C1677
Fig. 11
Coupled dv/dt - Test Circuit
TYPICAL CIRCUIT APPLICATIONS
Vee
,..------- --,
"
I
I
I
I
I
I
-OJ:.
,
VF
I
I
-
I
I
VISO
I
,
Vee
I
V,
MCS2401
DC LOAD
_J
)
CONTROL {
INPUTS
TTL GATE
C372A
OPERATING SCHEMATICS
NOTES
1. The rise time of the SCR is typically less than 500 nanoseconds.
70
C13S
220V AMS
50-60 Hz
PHOTOTRANSISTOR OPTOISOLATOR
I
MCT2
PACKAGE DIMENSIONS
DESCRIPTION
~~:-A1
CD
1
2
The MCT2 is a NPN silicon planar phototransistor
optically coupled to a gallium arsenide diode. It is
mounted.in a six-lead plastic DIP package.
FEATURES & APPLICATIONS
3
·,,,
,
SYMBOL
\1
I ;!,[j I::i IE g
~
-lHf-
q
til
SEATING
I
PLANE!
p
•
•
•
•
•
•
•
•
•
I
•
I
~II_
,
,",,
,
G
~
1
··
-ll-K
r--J~
."'" ."'"
INCHES
NOTES
....
""
"" '"".
""
"" '" ,,
,
'"
".
.3001'1.1 1621'1.1
.01.
.325
.010
.110
8.26
... ...
1.18
2.18
".45
.
~: ~~SJ:~~;g:~SITlON OF LEAO CENTERS
3,QVERALLINSTAI.LEDPO$ITION
4. THESE MEASUREMENTS ARE MADE FROM
5.
~
ANODE 1
NOTES
~~!,~~~~~~~~~
AC line/digital logic isolator
Digital logic/digital logic isolator
Telephone/telegraph line receiver
Twisted pair line receiver
High frequency power su pply feedback control
Relay contact monitor
Power supply monitor
UL recognized - File E50151
VDE approval applied for
CATHODE 2
3
6 8ASE
5 COLLECTOR
'"
EMITTER
C1339
Storage temperature _55°c to 150°C
Operating temperature _55°C to 100°C
Lead temperature (Soldering, 10 sec) 260°C
Input Diode
Output Transistor
Forward current . . . . . . . . . . . . . . . . . . 60 mA
Power dissipation at 25°C amQient . . . . . 200 mW
Reverse voltage . . . . . . . . . . . . . . . . . • 3.0 V
Derate linearly from 25°C . . . . . . . . . 2.6 mW/C
Peak forward current
Input to output voitage isolation .... 1500 volts DC
(1 J.Ls pulse, 300 pps) . . . . . . • . . . . . . . 3.0 A
Total package power dissipation at
Power dissipation at 25°C ambient .... 200 mW
25" C ambient (LED plus detector) . . . . . 250 mW
Derate linearly from 25°C . . . . . . . . . 2.6 mW/C
Derate linearly from 25'C . • . . . . . . . . 3.3 mW/"C
Collector-Emitter Current (ICE) . . . . . . . . . . 50 mA
ABSOLUTE MAXIMUM RATINGS
ELECTRO-OPTICAL CHARACTERISTICS
CHARACTER ISTIC
Input Diode
Forward Voltage
Reverse Breakdown Voltage
Junction Capacitance
Reverse Leakage Current
Output Transistor
DC Forward Current Gain
Colleclor To Emitter Breakdown Volt.
Collector To 'Base Break·
down Voltage
Emiller to Collector Breakdown Voltage
Collector To Emiller, Leakage Current
Collector To Base Leakage Current
(25°C Free Air Temperature Unless Otherwise Specified)
SYMBOL
MIN.
VF
BV R
CJ
3.0
TYP.
MAX.
UNITS
1.50
V
V
pF
IR
1.25
25
50
.01
10
I1A
hFE
250
BV CEO
30
BVCBO
70
TEST CONDITIONS
IF = 20 rnA
I R=lO I1A
VF=OV
V R=3.0 V
VcE =5 V,l c =lOOI1A
85
V
Ic=1.0 rnA, IF=O
165
V
Ic=10 I1A
BVECO
14
V
IE = 100J.LA, IF = 0
ICEO
5
50
nA
VcE =10V,I F=0
ICBO
0.1
20
nA
VcB =10 V, IF=O
71
MCT2
ELECTRO-OPTICAL CHARACTERISTICS (2SoC
CHARACTERISTIC
SYMBOL
Capacitance Collector To
Emitter
Capacitance Collector To
Free Air Temperature Unless Otherwise Specified)
MIN.
MAX.
UNITS
TEST CONDITIONS
CCEO
CCBO
Base
Capacitance Emitter To Base
CEBO
Coupled
DC Collector Current Transfer
Ratio
DC Base Current Transfer Ratio
Isolation Voltage
IC/IF
20
IS/IF
3500
2500
lOll
Isolation Resistance
Isolation Capacitance
Collector-Emitter. Saturation
Voltage
pF
VCE=O
20
10
pF
pF
Vcs=10 V
VSE=O
60
%
.35
%
VDC
VRMS
0.24
0.4
150
Bw
SWITCHING TIMES
Vcs=10 V. IF·lD rnA
pF
f=60Hz
V,.o=sOO V
f=lMH"
V
I C =2.0mA, IF= l6mA
KH~
TYP
Saturated
t on (from 5 V to 0.8 V)
t off (from SAT to 2.0 V)
Saturated
Ion (from 5 V to 0.8 V)
t off (from SAT to 2.0 V)
Non·Saturated
Base
Rise Time
Fall Time
VCE=10V. I F =lOmA. Note 1
n
1012
.5
V cElsat)
Bandwidth (see note 2)
8
UNITS
Ic=2 rnA, V cE =10 V, RL =100 Q
(Circuit No.1)
TEST CONDITIONS
ton (SAT)
toff (SAT)
10
30
I1s
RL =2 KQ, I F =15 mA, Vcc=5 V
Rs=open (Circuit No.2)
ton (SAT)
loff (SAT)
10
27
I1S
RL =2 KH, I F =20 rnA, Vcc=5 V
Rs=100 KH (Circuil No.2)
tr
tf
300
300
ns
ns
RL =1 KQ, Vcs=10 V
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES
(2SoC Free Air Temperature Unless Otherwise Specified)
Vee
-'F
-'F
vee
]~
]~
)
Circuit 1
72
)""'
Vau!
Circuit 2
""
MCT2
TYPICAL ELECTRO·OPTICAL CHARACTERISTIC CURVES
(25°C Free Air Temperature Unless Otherwise Specified)
14 0
III
* 130
6 120
a:
a:
40
30
30%
20%
10'
,
VeE - 70V ....
VeE· 50V....
I
0
o
~ 10'
rTll
.......-:
10
~
"~
/1
./
0.....:;
/~ ~~
//
~~ j
B'D' t=
w
/5~
/
/
50
,
10'
~
~ol
90 f-T. = 25°C _
80
70
S.
....I
90L
~ 100 f--Vee • 5.tiU
60
v
FALL TIME-
1!-UJ~!m~
limA
w
'~"
~
.7
is
,6
ttJI+H+PI.H'OmA
;::
: .5Ht+ttt--+H-HtttlHtH-'H---'t-it-t--Nffla.DmA
~
~
8
6
7.0mA
6.0mA
.4
.3Ht+ttt---I~H-H-!\ff-l..-f'..t"j..tfI'l'H5.0mA
4,OmA
t:l
4
3
>
eTA - 50%
10K
4 6 BtOOK 2
4 6 81M
As _. BASE RESISTANCE - H
20
CB16
Fig. 3. Switching Time vs. Base
Resistance
10 -" 40mA
.21-++++++--~H.t:I'I+
o
T. (5"C
IF" 10xlc
.2
,5
Ie - COLLECTOR CURRENT (rnA)
./
~1 ~I~~~"C
"'ii/-
~
1
"'fr
1. 0
.;
10
;ji
,
100
-r-
i=
;::
~
:::
a:
ffZ
w
a:
a:
V
80
oj
6
~=+100"
9
w
>
~
a:
/
II
20
V
V
o
A
+HJl
'F "-
V
"IJ~
'1 ,v!,
V
8
.1
.2
C822
.5
1
2
5
10
20
50 100
IF - FORWARD CURRENT - rnA
C823
Fig. 8. Forward Voltage vs.
Forward Current
24
1
lOrnA
1
20
16
12
II
•0
u
IF ,,2
V
/
I
I
:>
i=
I, -" 50 rnA
V
J:..F-
V
Fig. 7. Saturation Voltage vs.
Collector Current
o
I~;"\ +25"C
) ..........
I
1
.1
•hs.Tli1mrRE
1. 3
;:'"
61. 2
/
\
MCT2: FORWARD VOLTAGE vs.
FORWARD CURRENT (V F vs. IF)
Vee" IOV
1A~,~~C
If
3U
-
,......
25pA
V
26'A_ - r I
1 -c-
r-
,
15
A
lOpA_
l1
.,
SI-,A
18
J
0
10K
111111
lOOK
o
o
1M
R8 E - BASE RESISTANCE - 11
C825
Fig. 9. Sensitivity vs. Base Resistance
18
12
vc.
16
volts
20
~
0
2.
C826
Fig. 10. Detector Typical hfe Curves
NOTES
1. The current transfer ratio (JCII FI is the ratio of the detector collector current to the LED input current with VCE at 10 volts.
2. The frequency at which ic is 3 dB down from the 1 kHz value.
3. Rise time (tr ) is the time required for the collector current to increase from 10% of its final value, to 90%.
Fall time Itfl is the time required for the collector current to decrease from 90% of its initial value, to 10%.
74
PHOTOTRANSISTOR OPTOISOLATOR
I
MCT2E
PACKAGE DIMENSIONS
DESCRIPTION
The MCT2E is a NPN silicon planar phototransistor
optically coupled to a gallium arsenide diode. It is
mounted in a six·lead plastic DIP package.
ANODE
CATHODE
~
I
1....
2
3
6
BASE
5
COLLECTOR
4
EMITTER
FEATURES & APPLICATIONS
Utility/economy isolator
AC line/digital logic isolator
II Digital logic/digital logic isolator
II Telephone/telegraph line receiver
II Twisted pair line receiver
II High frequency power supply feedback control
II Relay contact monitor
II Power supply monitor
II UL recognized - File E50151
.. High isolation voltage
VISO = 2500 V RMS, 1 minute
II VDE approval applied for
II
II
CIJ39
SEATING
PLANE
NOHS
"fIISTALlEDPOSITlONOFLEADCENHAS
<.fOURPLA.CES
JOYERALLlr..ISTALLEOPOSITION
4 TIiESEMEASUAEMEiIITSAREMAOEfROM
TilE SEATING PlAI'IE
5MIr.lIMUM01OOINCH
ABSOLUTE MAXIMUM RATINGS
Storage temperature _55°C to 150°C
Operating temperature _55°C to lOO°C
Lead temperature (Soldering, 10 sec) 260°C
Input Diode
Derate linearly from 25°C . . . . . . . . . 2.6 mWtC
Forward current. . . . . . . . . . . . . . . .. 60 mA
Isolation rating . . . . . . . . . . . . . . . . , 3550 VDC
Reverse voltage. . . . . . . . . . . . . . . . . .. 3.0 V
Total J>ackage power dissipation at
25 C ambient (LED ,pIuS detector) . . . . . 250 mW
Peak forward current
(1 Jls pulse, 300 pps) . . . . . . . . . . . . . . 3.0 A
Derate linearly from 25 C . . . . . . . . . . . 3.3 mW/C
Power dissipation at 25°C ambient . . . . 200 mW
Collector-Emitter Current (led . . . . . . . . . . 50 mA
Derate linearly from 25°C . . . . . . . . . 2.6 mW/C
Output Transistor
Power dissipation at 25°C ambient . . . . . 200 mW
ELECTRO·OPTICAL CHARACTERISTICS
CHARACTERISTIC
Input Diode
Forward Voltage
Reverse Breakdown Voltage
Junction Capacitance
Reverse Leakage Current
(25°C Free Air Temperature Unless Otherwise Specified)
SYMBOL
MIN.
VF
BV R
CJ
3.0.
IR
UNITS
TYP.
MAX.
1.25
25
50
.01
1.50
V
V
pF
10
I1A
TEST CONDITIONS
IF = 20 rnA
IR=IO I1A
VF=OV
VR=3.0 V
Output Transistor
DC Forward Current Gain
Collector To Emitter Break·
down Volt.
hFE
lOa
VcE =5 V, Ic=100 I1A
250
BV CEO
30
85
V
Icd.O rnA, IF=O
BVCBO
70
165
V
Ic =1 0 11A
BV ECO
7
14
Collector To 'Base Break-
down Voltage
Emitter to Collector Breakdown Voltage
Collector To Emitter, Leakage Current
ICED
5
50
ICBO
0.1
20
V
IE = 100JlA, IF = 0
nA
VcCIOV.IF=O
nA
VcB =10 V, IF=O
Collector To Base Leakage Current
75
MCT2E
ELECTRO·OPTICAL CHARACTERISTICS
CHARACTERISTIC
Capacitance COllector To
Emitter
Capacitance COllector To
Base
Capacitance Emitter To Base
Coupled
DC COllector Current Transfer
Ratio
DC Base CUrrent Transfer Ratio
Surge Isolation voltage
Steady state Isolation voltage
SYMBOL
(25°C Free Air Temperature Unless Otherwise Specified)
GUAR.
MIN.
TYP.
GUAR.
MAX.
UNITS
TEST CONDITIONS
CCEO
Cceo
e EBO
IC/i F
20
Ie/IF
8
pF
VCE=O
20
10
pF
pF
Vce=IO V
VeE=O
60
%
VcE=IOV,IF=IOmA, Note I
.35
%
Vce=IO V, IF-IO mA
Visa
4000
VDC
VAC~rms
Visa
3000
3S00
VDC
Relative humidity S SO%
TA = +2SoC, 11.0 S 10 /-lA
1 second
Relative humidity ~ 50%,
TA=+2SoC,II_OSI0/-lA
Bv(I-O)
Isolation Resistance
Isolation Capacitance
COllector-Emitter, Saturation
Voltage
Bandwidth (see note 2)
VCE(sat)
Bw
2S00
VAC-rms
3500
1011
VDC
10'2
.5
0.24
150
52
0.4
1 minute
pF
V,_o=500 V
f=IMH ...
V
'C = 2.0 mA, 'F
KHz
= 16 mA
'c =2 mA, V CE=IO V, RL=IOO n
(Circuit No. I)
SWITCHING TIMES
Non-Saturated
Collector
Non-Saturated
COllector
TYP,
UNITS
TEST CONDITIONS
Delay Time
Rise Time
Storage Time
Fall Time
td
t,
t,
tf
0.5
2.5
O.!
2.6
!ls
RL =100 n, Ic=2 mA, Vcc=IO V
(Circuit No. I)
Delay Time
Rise Time
Storage Time
Fall Time
td
t,
t,
tf
2.0
15
o.!
!5
!ls
RL =1 KH, Ic=2 mA, Vcc=IOV
(Circuit No. I)
ton (SAT)
tOft (SAT)
5
25
!ls
RL =2 Kn, I F =15 mA, Vcc=5 V
Re=open (Circuit No.2)
ton (SAT)
tOft (SAT)
5
18
!ls
RL =2 Kn, IF=20 mA, Vcc=5 V
Re=IOO KH (Circuit No.2)
t,
tf
175
175
ns
ns
RL =! KH, Vce=IO V
Saturated
t on (from 5 V to 0.8 V)
t off (from SAT to 2.0 V)
Saturated
t on (from 5 V to 0.8 V)
t off (from SAT to 2.0 V)
Non-Saturated
Base
Rise Time
Fall Time
Vee
C8DS
76
Circuit 2
C809
MCT2E
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES
(25·C Free Air Temperature Unless otherwise Specified)
l&O~
o
14 0
5-;-
"
6
~ ~~oOi--Vcc
vy~
0
5
130
120
[,.-
~
9O,"--TA =25"C
:r!
80
~
0
~
50
ee-
0
5
IF
&
10
15
20
",llomA
4
Fig. 1 Collector Current vs.
Col/ector Voltage
(for Typical CTR 30%)
,
" 130
~
~
~
-....;:
./
.2
~
"
«
~
-
1o
o
z
/
j
Vee'" tOv
20
40
60
80
100
lK
~J~TlM~
8
6r-
t.:! - DELAY TIME
4
3
"
2
FALL TII~IE-
>
~
o
>
z
Il
10
~
60
CBt2
eTR _ 50%
BV CEX
C816
Fig. 7 Switching Time vs. Base
RBe
VS.
"'"
1
C814
RL" 47012
0.1
I
I I II
RL" 100U
0.20.30-4 0.6o.a 1.0
2
3 4 5678 10
catS
COLLECTOR CURRENT Ie (rnA)
Fig. 6 Switching Time vs. Collector
Current
-
:
5 C
II III
sOaK 1M
z
o
>=
-I-H+1rt+M lOmA
.7
.sH-t++I+--H-I+-H+-lIHtH--HH--!.I-NcHla.OmA
7.0mA
6.0mA
.3H-t++I+--\t-\--t-\:ffi
98%OF ALL UNITS
2M
5M
20
10M
cal7
Fig. B Collector - Emitter Breakdown
Voltage vs. Base Resistance
C819
~
~
~
- BASE EMITTER RESISTANCE - n
Fig. 10 Circuit for Figure 7
lImA
w
~ .4
~
RBe
1'I III
40
tOOK 200K
46 81M
I I
Rc.l.Gof"
l l
1""- ......
MCT2
'-ry
Resistance
10 20 30 40 50 60 70 80 90100
°
\
0
4
3
2
Rs _. BASE RESISTANCE - 11
a
'1""'-
<-'
ES'
12 0
80
68100K 2
~
RBE
I
4
i''!"'r
10
Vr '" 10 VOLTS
,~-~
6
14 a
8
6
10K
I
V
o ryplcA'L
, 1601-'-'-'"
";
.! ~WWJ
>
,
I
r:1//
Fig. 3 Dark Current vs. Temperature
Fig. 5 Collector Current vs.
Frequency
18
,
25V
I I II
I I II
10K
lOOK
FREQUENCY (Hz)
C813
I .... - PULSE WIDTH TIME
2
I"
TA - TEMPERATURE -"C
1\
\
Fig. 4 Current Transfer Ratio vs.
Temperature
4
3
-20
\
G.2
20
•
C811
\\
80.4
AMBIENT TEMPERATURE (OC)
10-
...
0.6
•
40
'liCE '" SOV
_VeE
.
4
-CTR"'t;--
4
VeE'" 70V
I
1\ I
\"
1.
IF -= lOrnA
/.
2
60
0
~ 0.8
-'j ~s
30 -
20 406080
Fig. 2 Current Transfer Ratio vs.
~
::' soL,
a
4 6810
1.
LOW CURRENT TRANSFER RATIO
7
.4 .6.81.0 2
IF - FORWARD CURRENT - rnA
~
:::-..
L'
0
;
I
l0~ ~y
,
,
10'
o
K
VeE" 10 VOLTS
~
./
w
z
~
,
30%
1-1"20%
• HlllllI
;;1.• llllillL
!.1.
z ,
~
a°
.........
i!; 9 0
'"
;2
Forward Current
HIGH CURRENT TRANSFER RATIO
11 0
~~ ~~
w
,
10'
01
,.
-...
o
ala' ,
~ 10'
"/
VeE COLLECTOR VOLTAGE DETECTOR (VOLTS)
C810
V
~
I/'ol
;;.;.
I/so%
/
0
,
I 10'
e-
~
a
,
«
gal
/
0
0
30
25
10'
lld%
0
a,
IF=20 mA
'111111
1111111
,111111
_~I"!!
=5.0V
50
IF- FORWARD CURRENT - rnA
100
CBIB
Fig. 9 Saturation Voltage vs.
Forward Current
ca2D
Fig. 11 Waveforms for Figure 7
77
MCT2E
TYPICAL ELECTRO·OPTICAL CHARACTERISTIC CURVES
(25 0 C Free Air Temperature Unless Otherwise Specified)
,
.50
> .•5
I
~
.40
~
1.5
If'" lOrnA
.8
~ 1.
Ie :2mA
6
o
~
.35
~
z
o
~
.25
:>
.20
.
.1 5
.30
a
-
I
;
.1 0
--
r- r-i"""
\
\
""- ~ /
.2
CTTO%
o
20 30 40 50 60 70 80 90 100
TA -AMBIENTTEMPEAATURE-"C C821
0,-"I 10
IF -50mA
~
'"
w
50
~
~
o
~
B0
oi
II
/
~ 6
~
o
...
":=
"o
......
, ..,,,,-
'10
:>
T.
100
2~;:i:
1000
10.000
a
w
>
I
~
100,000
OPERATING SCHEMATICS
41n.
Leo
-
CONSTANT
CURRENT
INPUT
r
I
'-L __ _
)---~
o
IF -
-
5 10 20
50 100
1
FORWARD CURRENT - rnA CB23
Fig. 14. Forward Voltage vs.
Forward Current
4
0
V
6
B
Vee'" IOV
TA ',~~·C
If
Y
l
- 3U
-- --
25~A
20~AI_
--
15iA
I
11111
'OOK
'OK
Vee = 10 VOLTS
1-1--
10pA
'e =5pA
Ie ,,0
0
,M
12
CB25
16
2.
20
e826
VC,volts
Fig. 17. Detector Typical hfe Curves
.7n
PULSE
INPUT
-
I,
Vee = 10 VOLTS
DETECTOR
DETECTOR
' - - -........- _ OUTPUT
-
PULSE
L-_ _ _..._ _ OUTPUT
I,
I,
Rl. ,. 100n
CB27
Modulation Circuit Used to Obtain Output vs Frequency Plot
C~2B
Circuit Used to Obtain Switching Time vs Collector Current Plot
NOTES
1. The current transfer ratio (lCII F) is the ratio of the detector collector current to the LED input current with VCE at 10 volts.
2. The frequency at which ic is 3 dB down from the 1 kHz value.
3. Rise time (tr ) is the time required for the collector current to increase from 10% of its final value, to 90%.
Fall time (tf) is the time required for the collector current to decrease from 90% of its initial value, to 10%.
78
~
I
4
Fig. 16. Sensitivity vs. Base Resistance
I,
,5
'F",10mA
ABE - BASE RESISTANCE - 11
Fig. 15. Lifetime vs. Forward Current
(Note 4)
>--1 hlV'v---.
ca22
2
!f
20
CB24
TIME - HOURS
~~~¥lATION l~F
.2
~ 40
Ilillll
I
B
'0
/
"fJ~
I IVi
/
9/
z
h - 3"""
......
Q
I
IF'" lOxle
If : 2 0 m n .
/V
o
:ilo
~
~ 1. 0
Fig. 13. Saturation Voltage vs.
Col/ector Current
;::
I
/ /
.5
Ie - COLLECTOR CURRENT (rnA)
.2
Fig. 12. Saturation Voltage vs.
Temperature
"z
~~~I~~hl
T'l'. +2rJ;.
"~ 1.,.......
TA", +l00
L
i
10
rrlifliliTU1E
>
TA,,,,25"C
~ .05
4rvs.
1.3
~ 2
51,
/
•
MCT2: FORWARD VOLTAGE vs.
FORWARD CURRENT (V F vs. IF I
PHOTOTRANSISTOR OPTOISOLATOR
I
MCT210
DESCRIPTION
PACKAGE DIMENSIONS
The MCT210 incorporates a NPN silicon
planar phototransistor optically coupled to
a gallium arsenide diode emitter. The
MCT210 has a specified minimum CTR of
50%, saturated, and 150%, unsaturated.
This unit is mounted in a six·lead plastic
DIP socket.
FEATURES
SEATING
PLANE
CA:::::
~': : ~:ECTOR
3
4
EMITTER
• TTL compatible 1·10 gate loads
• High CTR with transistor output
MCT21 0-150% min.
• Specified CTR over temperature range
• Good logic load characteristics
VOL = 0.4 V @ 1.6 mA to 16 mA
output sinking {lod
• UL recognized (File #50151)
• VDE approval applied for
C1339
mm
SYMBOL
MAX.
9.27
APPLICATIONS
NOTES
6.86
4.06
15"
• Digital logic isolation
• Line receivers
• Feedback control circuits
• Monitoring circuits
1.78
.110
.022
L
M
.OB5
2.79
0.58
2.16
.175
4.45
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVERALL INSTAllED POSITION
4. THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
5.MINIMUM 0.100 INCH
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . . . . -5SoC to IS00C
Operating temperature . . . . . . . . . -SSoC to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 2SoC
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from ?SoC . . . . . . . . . . 3.4 mW/C
Surge isolation . . . . . . . . . . . . . . . . . . 4000 VDC
3000 VRMS
Steady state isolation . . . . . . . . . . . . . 3500 VDC
2500 VRMS
INPUT DIODE
Forward current
. . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . 3.0 V
Peak forward current
(1 I.!s pulse, 300 pps) . . . . . . . . . . . . . . . . . . 3.0 A
Power dissipation 2SoC to 70°C ambient ... 90 mW
Derate linearly from +70°C . . . . . . . . . . 2.0 mW/C
OUTPUT TRANSISTOR
Power dissipation @ 2SoC . . . . . . . . . . . . 200 mW
Derate linearly from 2SoC . . . . . . . . . 2.67 mW/C
79
MCT210
ELECTRO-OPTICAL CHARACTERISTICS
(0° to +70°C Temperature unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
w
Q
0
C
I-
:J
"~
a:
0
I-
U)
iii
2
«a:
CHARACTERISTIC
SYMBOL
Forward voltage
Forward voltage temp.
coefficient
Reverse breakdown voltage
Junction capacitance
VF
MIN.
MAX.
UNITS
1.50
V
mV/C
Reverse leakage current
IR
15
50
65
.01
DC forward current gain
Breakdown voltage
Collector to emitter
Collector to base
Emitter to collector
Leakage current
Collector to emitter
hFE
400
BV R
CJ
BVCEO
BVCBO
BVECO
6.0
TYP.
1.25
-1.8
30
30
6
V
V
V
8
:J
"-
I-
:J
0
Capacitance
Collector to emitter
Collector to base
Em itter to base
Ic = 1.0 mA, IF = 0
Ic= lO /lA
IE = 100/lA, IF = 0
50
nA
30
/lA
VCE = 5 V, IF = 0,
TA = +25°c
V cE =5V,I F =O,
pF
pF
pF
V cE =O,f=lMHz
V CB = 5, f = 1 MHz
V EB = 0, f = 1 MHz
lI-
I R =10pA
V F = 0 V, f = 1 MHz
V F = 1 V, f = 1 MHz
V R =6.0V
VCE = 5 V, Ic = 10 mA
45
5
I CEO
10
V
pF
pF
/lA
TEST CONDITIONS
IF = 40 mA
8
20
10
COUPLED CHARACTERISTICS
CHARACTE RISTIC
SYMBOL
Current transfer ratio,
collector to emitter
MCT210 (a)
ICE/IF
Current transfer ratio,
collector to base
Saturation voltage
collector to em i tter
MCT210
ICB/IF
u
Q
i=
0
U)
w
;;!;
1=
C!I
2
X
u
I-
~
80
50
70
%
150
225
0.6
%
%
0.2
MAX.
UNITS
0.4
Ic = 16mA,IF = 32 mA
VIsa
4000
Steady state isolation
Visa
3000
3500
VAC-rms
VDC
I solation resistance
R iso
2500
1011
I solation capacitance
Fall time
Saturated
Rise time
Fall time
Propagation delay
High to low
Low to high
VCE = 0.4 V, IF = 3.2 mA
to 32 mA
VCE = 5.0V,I F = 10mA
V CB = 5.0 V, IF = 10 mA
Relative humidity
50%,
TA = +25°C, 11-0 ~10 /lA
1 second
Relative humidity
50%,
TA = +25°C, 11•0 ~10 /lA
1 minute
VI-o = 500 VDC,
TA = +25°C
f = 1 MHz
Surge isolation
Non-saturated
Rise time
TEST CONDITIONS
V
VDC
«....I
~
TYP.
VCE(SAT)
2
0
MIN.
<
<
5x10 12
VAC-rms
ohms
C iSO
1.0
pF
t,
4
/ls
~
5
/ls
RL = 100 n, Ic = 2 mA,
Vcc = 5 V
See Figures 17 and 18
t,
tf
2.5
25
J.ls
J.ls
RL = 560n,I F = 16mA
See Figures 17 and 18
TpD(HL)
TpD(LH)
2
10
J.ls
J.ls
RL = 2.7K, IF = 16 mA
See Figures 17 and 18
MCT21 0
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
100
100
60
40
20
10
6
///
'/I
I.
20
Ii~Q~fffi
w"']..'6~
60
40
20
14
"
~
1
.6
4
O·C
+25"C
+7 °c
fIliI
I
2
.0 1
.5
/I
III
2
/
I
1.5
1.0
2.0
2.5
.01
20
,.
--
II-
14
!t
.E
10
-
12
10
8
III
i,.!+
.04
.2
.4.6 1.0
60
2
25,uA
'E
55
1\
~
20J.lA
[\
<'
E
~
~
130
z
jy
VeE'" 0.4 V
f-Ic '" 1.6 rnA
Ie 16mi-',
=
.5
1.0
2.0
5.0
10
~F =116:n~
1 Kn
IF -
SmA
IF=
4mA
~,) V
~
111 0
@ 100
N
::;
lMn
.9
90
6r---~---t----r----r---i
-50
-25
5 t---r-~r-'-e-.-'.-6rm-A --r-/-:;"1
..
41---+--+". 3.2 mA.,,-<;:-t-r--j
I
~
+25
?
Ic=16mA
...--
;31:R~~~
~
70
+50
2F--
"JmA
I"
+75
Ic=BmA
.1'-_-'-_ _'-_-'-_ _' - _....
+100
-25
+25
+50
.... 75
C1247
Fig. 7. Current Transfer Ratio
(saturated) vs. Temperature
+100
C1248
Fig. 9. Collector to Emitter
Saturation Voltage vs. Temperature
Fig. 8. Current Transfer Ratio
(unsaturated) vs. Temperature
100..----...----.,-----,
10.000~=+=+=hi
10M!!
C1246
'.0~~~
•
:;;
2:
0
+100
100 Kn
Fig. 6. Saturated CTR vs.
Base to Emitter Resistance
1c =20mA
'\
'"t;
"1i!
10 Kn
ABE - (n)
VeE - 5 V
C1259
101r----~----r-~~~
100
~
I
/"IJmY -
.0
'"t;
1,000
I
11
C1243
D.4 V
C1245
1c=2mA
lE
0
30
-50
1
9 10
7
120
,
1io!
VeE
Fig. 5. Collector to Emitter Breakdown
Voltage VS. Base to Emitter Resistance
,~
70
8
.06
RBE -IMol
C1244
I'" ~
iiiN
7
.02
.01
.2
5.0
110
90
6
.04
Fig. 4. Collector Current vs.
Collector to Emitter Voltage
I
'"t;
5
.2
.10
I"-o.....r--5
,~
4
1.0
.6
.4
!t
5.0jJ.A
0
3
10
6.0
4.0
2.0
2.5p.A
2.0
2
Forward Current
100
60
40
20
I
VeE - V
1
IF - (rnA)
0
1,0
o
~
Fig. 3. Collector Current vs.
15,A_
I--
.1.2.3.4.5 .7
~~
l/'
C1242
le= 1 rnA
10,uA
13
V
4
2.0 4.06.010
I
/,
•
0
.10
~
Vv~E·'.4V
V
Fig. 2. Collector Current vs.
Collector to Emitter Voltage
I.
301"A_
....
I-
16
.02
f
IF =2mA
VeE - (Yolts)
Fig. 1. Forward Voltage vs.
Forward Current
I
12
I
u
I
C1241
VF -(Volts)
<'
~
6
1
.06
.04
.02
E
L
IF -lOrnA
IF = ~ rnA
i
L
VVCE "'5V
16
~
<'
"EO
-"
100
~
~ O.ll---"""t---c
10
~::;
.0117'---j-zS-=-t-----i
+25
+50
+75
TEMP _
+100 +125 +150
(OC)
C1249
Fig. 10. Collector to Emitter Leakage
Current VS. Temperature
60
~
I
.001 '-.£..---'----..1----....
+25"
+50 0
+75 0
+100 0
TEMPERATURE - (OC)
C125Q
Fig. 11. Collector to Emitter Leakage
Current vs. Temperature
1i0"!
z
40
20
Po (TOTAL) = 100 mW
o
100
TIi~A:;:~'C I
toDD
10,000
100,000
OPERATING TIME - (Hours)
e12S!
Fig. 12. Current Transfer Ratio vs.
Operating Time
81
MCT210
TYPICAL SWITCHING CHARACTERISTICS
16
14
12
10
'in
""
I
BO~
I
,
Ii:~ RBE = 100 Kn
.
-tpO(HL!
I
E\.'
IF "'- 3.2 ~~ 16 rnA
Vee = 5 V
RL=2,7Kn
1
~
60
t,
RSE=OPEN
w
">=
Vee = 5 V
I
~~
70
RL. - 2.7 Kn
~
:%
50 f-+-H-ll'il!:.k:-Il:::+ttt-+-H-tt-I-H+H
I
40~~-H~t-~~~++*-+-+H~
">= 30 H-++1t-+-Hftt--p'llikt1t--H-tffi
1\0.
~SATURATED AT
RaE" 50 Kn
.~
----
I
3.24
12
16
IF -(rnA)
1M
....----
v
IC=2mA
.. 16
~~I, 11",1
rrrr
I
~
50K
C1253
J1Tlr[
O\rh" I "'1
~~~ : ;OV ill J I
4
010-·
""
100K
Fig. 14. Switch·off Time vs. Base to
Emitter Resistance (saturated)
Fig. 13. Switch·on Time vs.
'F Drive (saturated)
B
500K
RBe - (n)
C1252
12
~ll,170
~ll, 1100l!
Rl
0
lOOK
50K
500K
100n
lOOK
1M
RBe -lUI
C1255
Fig. 15. Rise Time vs. Base to Emitter
Resistance (non·saturated)
INPUT
TPDtiL
J
I
1M
C1254
Fig. 16. Fall Time vs. Base to Emitter
Resistance (non~saturated)
I
I
500K
RBE -In)
Vee
,",- - - -
--!: !__
:
I:
- : ~TPDLH
OUTPUT
~I
:
:
5V
(SATURATED):
:
,
,
1.5V-L
_ -1.5V
IF
..,
------ SAT.
1
OUTPUT
(NON
J
SATURATED)~!
10%
90%!_
:
C1256
i -!
90%
tr --::___
10%
ri
--:
:
r-- tf
e1257
INPUT
(3.2 TO 32 mAl
Fig. 17. Switching Time Waveforms
82
Fig. 18. Switching Time Test Circuits
I
FAN·OUT OF
1 TO 10 TTL LOADS
"...
"...
I
I
~
C1258
Fig. 19. Tvpical TTL Interface at
Operating Temperatures of d' to 7d' C
PHOTOTRANSISTOR OPTOISOLATOR
MCT2200
PACKAGE DIMENSIONS
DESCRIPTION
The MCT2200 is a phototransistor-type optically
coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is
selectively coupled with an NPN silicon phototransistor. The device is supplied in a standard
plastic six-pin dual-in-line package.
-I
L~=;=;==;=!l
C1240
SYMBOL
A
C
0
INCHES
MAX.
.365
.270
.160
15
MIL.
MAX.
9.27
NOTES
6.B6
4.06
15
.300 Ref. 7.62 Ref .
.014
0.36
.325
8.26
.070
.085
1.78
2.79
0.56
2.16
.175
4.45
,110
.022
FEATURES
II
II
II
II
II
M
High isolation voltage
5300 VAC RMS - 5 seconds
7500 VAC PEAK - 5 seconds
Minimum current transfer ratio of 20%
Maximum turn-on, turn-off time 20J.! seconds
specified
Underwriters Laboratory (U L) recognized
File #E50151
VDE approval applied for
APPLICATIONS
II
II
C1240
II
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVERALL INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE
5. MINIMUM 0.100 INCH
II
II
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
Fig. 1. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature '" . . . . . . . _55°C to 150°C
Operating temperature . . . . . . . . . -55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.5 mWtC
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 90 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 J.!s pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient . . . . . . . . 135 mW
Derate linearly from 25°C . . . . . . . . . . 1.8 mW/oC
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/oC
83
MCT2200
ELECTRO·OPTICAL CHARACTERISTICS (25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
U
Q
Current Transfer Ratio,
collector to emitter
Saturation voltage
SYMBOL
MIN.
CTR
20
TYP.
MAX.
UNITS
60
TEST CONDITIONS
%
IF
VCE(SAT)
.21
.40
V
IF
6.0
5.5
20
20
I'S
I'S
= 10 rnA; VCE =5V
= 10 rnA; Ic = 2.5 rnA
c:J
!I/I
:rw
Non ..aturated
U::E
Turn-on time
-~
Turn..,ff time
ton
toff
Isolation Voltage
Visa
5300
VAC RMS
Visa
7500
VAC PEAK
Isolation resistance
Rlso
1011
Isolation capacitance
CISO
~-
~
Z
0
~
...J
0
!!!
ohms
pF
.5
{RL = 100 n; Ic
Vcc=10V
See figure 10.
= 2 rnA;
Relative humidity .. 50%,
11-0 .. 10 !lA, 5 seconds
Relative humidity .. 50%,
11-0 "10I'A, 5 seconds
= 500 VDC
= 1 MHz
VI-O
f
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC
w
0
0
e
~
:J
a..
!
Forward voltage
SYMBOL
MIN.
VF
TYP.
MAX.
UNITS
1.3
1.50
V
10
mV/oC
V
pF
pF
IlA
TEST CONDITIONS
IF
= 60 rnA
Forward voltage temp.
coefficient
Reverse breakdown voltage
Junction capacitance
Reverse leakage current
BVR
CJ
3.0
IR
-1.8
25
50
65
.35
IR = 10llA
VF = 0 V, f
VF = 1 V, f
V R = 3.0 V
= 1 MHz
= 1 MHz
Breakdown voltage
a:
0
~
1/1
iii
BV CEO
BVCBO
BV ECO
Z
Leakage current
a:
Collector to emitter
Coli ector to base
Capacitance
c(
~
~
:J
IL
~
:J
0
84
Collector to emitter
Collector to base
Emitter to collector
ICED
ICBO
30
70
7
45
130
10
5
Collector to emitter
8
Collector to base
Emitter to base
20
10
50
20
V
V
V
Ic = 1.0 rnA, IF = 0
Ic= 10llA
IE = 100llA,IF = 0
nA
nA
VCE = 10V,IF =0
V CB = 10 V, IF = 0
pF
pF
pF
V CE = 0, f = 1 MHz
V CB = 5, f = 1 MHz
V EB =O,f=l MHz
MCT2200
ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
100
60
40
20
;( 6.0
§. 4.0
I
I
/ / /
1.0
.6
.4
.2
.1
I
0.75
!il
0.50
I
N
::J
I
~
/ /
/
II I
Z
I
.9
1.0
0.25
o
1.1
1.2
1.3
1.4
VF-(Volts}
o
1.5
o
5
IF -
C1285
Fig. 2. Forward Voltage vs.
Forward Current
1.0
IF = 10mAIF = 5mAIF = 20mA\
f
• E
a:=~ 1.0
I-a:
UI-
I
0.8
Cl
/
w
N
:::
a:
,/ ~/
~
--8-
0.60
a:
I-
0.50
U
Cl
w
0.40
::J
0.30
:::
0.20
~
0.10
N
a:
z
0.4
-75 -50 -25
~
V ""
+25 +50 +75 +100 +125
("C)
1.00
~
I
g:
--8-
0.60
a:
IU
0.50
Cl
0.40
w
N
0.30
:::
a:
0.20
0
Z
VeE = 0.3V
"?'I
m z
a:
W
I
0.10
0
10K
~
0
........
1.1
~1.0
I
:9
0.9
/
Cl
w
::J
a:
0
Fig. 6. CrR vs. RSE
1M
(n) C1682
V
Vee = 10V
Ie =2mA
RL = lOOn
0.7
llliLe ~ illl co
z
I
I
0.8
«
::;;
I
I
RBe -
C1681
:a :=
IF= 20mA
IF = 10mA
IF= 5mA
100K
BASE RESISTANCE -
1M
(n)
1.2
_
t
100K
BASE RESISTANCE -
Fig. 5. CrR vs. RSE
N
::J
«
""'.......
!
II
RBe -
III
1/1
,......
JlU
_I
/ J
I 1
10K
C1680
~
~ 0.80
I- a:
U
0.70
~
IF = 20mA
IF = 10mA
IF =5mA
If
Fig. 4. Normalized Current
Transfer Ratio vs.
Ambient Temperature
rl
20
C1679
o
0
TA -
ffi 0.90
&
15
VeE = 5V
<{
0
1'\
/'
g:
/
0.6
~~I ~::~
I
a: m
I- a:
U
0.70
1-.:.. ~
~~
~
/
'
II
~
V
~
<{
Vce = 0.3V
VeE = S.OV
~
10
(mA)
Fig. 3. Normalized Current
Transfer Ratio vs.
Forward Current
1.2
::J
~
<{
.8
a:
IU
--..
V
a:
IU
J /
2.0
VeE = 0.3V
VeE = 5.0V
UI~
/ il
10
..!!,
i'IJ :::5
.-r/ /
75"C/25"C/ -25"C
0.6
10K
RBe -
100K
1M
BASE RESISTANCE -
(n)
C1683
Fig. 7. Normalized toff vs. ReE
85
MCT2200
ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
1.2
1.2
v
-------m w
WI
Z
g~
II:
::;:
1\
~
~
~ I~
\
~ 1.1
I
Vee = 10V
RL = 100n
(See Fig. 10)
w
!2
f-
~
..9
I- 0.8
0
(/)
:::;
@]
W
N
<{
~ ~
::;:
1.0
::;:
a:
Vee = 10V
Ie =2mA
RL = 100n
(See Fig t
0
Z
RBE -
100K
1M
BASE RESISTANCE -
\ "-
f'....
0.6
a:
oZ
t!!1
0.9
10K
10
6~1I
c
0.4
co
(n)
o
5
10
le-(mA}
C1684
Fig. 8. Normalized ton vs. RSE
15
20
C1685
Fig. 9. Normalized Switching
Time vs. Col/ector Current
Vee = 10V
}
OUTPUT
OV
.
RBE
PULSE WIDTH = 100 Il-S
DUTY CYCLE = 10%
INPUT
.~<.
t ....
OUTPUT---,.
I
1
10%
I
I
I
I
-J ton~
Ci296A
rC1294
Fig. 10. Switching Time Test
Circuit and Waveform
86
I
toff
PHOTOTRANSISTOR OPTOISOLATOR
I
MCT2201
PACKAGE DIMENSIONS
I_A_I
Iu
1
-r=1
L
2
3
t[J1}
~c_1
I
C1240
1 1"1_
"'''""~ml
PLANE
P
M
-+C1240
DESCRIPTION
The MCT2201 is a phototransistor-type optically
coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is
selectively coupled with an NPN silicon phototransistor. The device is supplied in a standard
plastic six-pin dual-in-line package.
F
--~
T C1240
SYMBOL
A
J
INCHES
MAX.
MIL.
MAX.
.365
.270
9,27
6.B6
4.06
,.
,160
FEATURES
NOTES
,.
.300 Ref 7.62 Rei.
.014
0.36
.325
8.26
1.78
.070
.110
2.79
.022
0.56
~11-K
L
M
08.
2,16
.175
4.45
•
D
D
•
•
High isolation voltage
5300 VAC RMS - 5 seconds
7500 VAC PEAK - 5 seconds
Minimum current transfer ratio of 100%
!VIaximum turn-on, turn-off time 1OJ.! seconds
specified
Underwriters Laboratory (UL) recognized
File #E50l5l
VDE approval applied for
APPLICATIONS
C124Q
Nons
•
•
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVERALL INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE
5. MINIMUM 0.100 INCH
Fig. 1. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . " _55°C to 150°C
Operating temperature . . . . . . . . . _55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260° C
Total package power dissipation @ 25° C
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.5 mWtC
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 90 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 J.!s pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient . . . . . . . . 135 mW
Derate linearly from 25°C . . . . . . . . . . 1.8 mW/oC
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/oC
87
MCT2201
ELECTRO~OPTICAL
CHARACTERISTICS (25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
0
C
Current Transfer Ratio,
collector to emitter
SYMBOL
MIN.
TYP.
CTR
100
200
MAX.
UNITS
TEST CONDITIONS
%
IF=10mA;V CE=5V
VCE(SAT)
.21
.40
V
IF = 10mA; IC = 2.5 mA
Turn·off time
ton
toll
6.0
5.5
10
10
I'S
I'S
Isolation Voltage
Visa
5300
VAC RMS
Visa
7500
VAC PEAK
Isolation resistance
Riso
10"
Isolation capacitance
Ciao
Saturation voltage
Cl
~rn
J:W
~!
3:1-
Non~saturated
Turn·on time
rn
Z
0
j:
~
-'
0
!!!
ohms
pF
.5
{RL = 100U;IC= 2mA;
VCC=10V
See figure 10.
Relative humidity <; 50%,
1'.0 <; 10 I'A, 5 seconds
Relative humidity <; 50%,
11.0 <; 10 I'A, 5 seconds
V 1-0 = 500 VDC
1=1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC
W
C
Forward voltage
0
e
Forward voltage temp.
I-
Reverse breakdown voltage
"~
Junction capacitance
::l
a:
0
500
BVCEO
BVCBO
BVECO
30
70
7
45
130
10
mV/oC
V
pF
pF
10
I'A
TEST CONDITIONS
IF = 60 mA
IR = 10 I'A
V F = 0 V, I = 1 MHz
V F = 1 V, 1=1 MHz
V R =3.0V
VCE = 5 V, Ic = 100l'A
Breakdown voltage
Collector to base
Emitter to base
88
-1.8
25
50
65
.35
100
Capacitance
Collector to emitter
::l
V
IR
"-
I-
UNITS
1.50
hFE
Collector to emitter
Collector to base
::l
3.0
MAX.
1.3
DC forward current gain
lI-
Z
BVR
CJ
TYP.
Reverse leakage current
u
~
5o
I
~
0
V
o
./
/
/
VeE -'OVOlTS
,
/
9
L
10-1 0
V
,
10-1
10
I
I I
,
./
2.5
0
5
10
15
20
25
30
VeE COLLECTOR VOLTAGE - DETECTOR (VOL IS)
,
,
V
1
IF "'lOrnA
I
CE
_-1
---
7.5
o
IF' =20mA
r'
8
~
\f~
~
J
~
o
1
V-
5.0
'0 .0
.
1
!
~
:>
1
!
\!,1"6~,
,
!
!
20
30
40
50
,
00
60
IF INPUT CURRENT - LED (mAl
./
~
mow
~
W
00
AMBIENT TEMPERATURE (CI
100
C832
C831
CB30
Fig. 1 Detector Output Characteristics
0
,
J.. ..j..
II
1\ II
111111
, 111111111
·,
···,
40
]0
0
20
40 60 80
AMflllNT Tl","P[RAIUf,lE( t)
101')
I III
I III
\',L
VeE = 10VOLTS
Vr • 10 VOLTS
~~ \
0
~o
Fig. 3 Dark Current vs.
Temperature (' C)
Fig. 2 Input Current vs.
Output Current
......
10K
I I
:',
1\
\
lOOK
RL -"lDtt
I RL '" '0011
I III
0.2030.40.6o.a1.0
234567810
COl.LECTOR CURRENT IL (mA)
FREQUENCY (Hli
C834
C833
Fig. 4 Current Output
vs. Temperature
I I
RL"lulDL
:'.
Fig. 5 Output vs. Frequency
C835
Fig. 6 Switching Time vs.
Collector Current
For additional characteristic curves, see figures 2, 3, 5,6,8, 11,12, & 13 on MCT2.
OPERATING SCHEMATICS
MODULATION
INPUT
1 F
47n
r-ihN'V'-'"
LED
-
r
I
CONSTANT
CURRENT
INPUT
L __"'_
I,
Vee .. 10VOLTS
PULSE
INPUT
DETECTOR
' - - - . . . . ,. . .-
. . . OUTPUT
470
>-:pt-~
--=-u~
-
-I,
Vee -10VOLTS
DETECTOR
PULSE
' - - -.........-~ OUTPUT
"
"
C837
Modulation Circuit Used to Obtain Output vs. Frequency Plot
C838
Circuit Used to Obtain Switching Time vs. Collector Current Plot
NOTES
1. The current transfer ratio (IC/IF) is the ratio of the detector collector current to the LED input current with
VCE at 10 volts.
2. The frequency at which ic is 3 dB down from the 1 kHz value.
3. Rise time (tr) is the time required for the collector current to increase from 10% of its final value to 90%.
Fall time (tf) is the time required for the collector current to decrease from 90% of its initial value to 10%.
96
PHOTOTRANSISTOR OPTOISOLATOR
I
MCT270
PACKAGE DIMENSIONS
DESCRIPTION
The MCT270 is a phototransistor-type optically coupled
isolator. An infrared emitting diode manufactured
from specially grown gallium arsenide is selectively
coupled with an NPN silicon phototransistor. The
device is supplied in a standard plastic six-pin dual-inline package.
t[J
LJ,
I C1
~
1f
J.
TCI240
mm
SYMBOL
MAX.
NOTES
9.27
6.86
4,DB
FEATURES
•
,,"
7,B2Ref.
0,,.
8.26
1.78
2.79
0,,.
2,16
.175
•
•
•
4.45
•
Isolation voltage
2500VAC RMS - Steady State Rating
3000VAC RMS - Surge Rating
Minimum current transfer ratio of 50%
Maximum turn-on, turn·off time 10,u seconds
specified
Underwriters Laboratory (UL) recognized
File E50151
VDE approval applied for
NOTES
I,INSTALL.ED POSITION OF LEAD CENTERS
2. FOUR PL.ACES
3. OVERALL INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
5. MINIMUM 0,'00 INCH
ANOOE~'
CATHODE
BASE
2
5
COLLECTOR
3
..
EMITTER
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Power supply regulators
• Industrial controls
C1339
Fig. 1 Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . . . -55°C to 150°C
Operating temperature. . . . . . . .. -55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.5 mW/C
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 90 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 /.Is pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient . . . . . . . . 135 mW
Derate linearly from 25°C . . . . . . . . . . 1.8 mW/oC
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/oC
97
MCT270
ELECTRO-OPTICAL CHARACTERISTICS
(25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
ICE/IF
50
115
ICB/IF
.045
.15
MAX.
UNITS
TEST CONDITIONS
Current Transfer Ratio,
U
C
collector to emitter
%
collector to base
Saturation voltage
%
IF = 16 mA; VCB = 10 V
V
IF = 10 mA; IC = 2 mA
/-IS
/-IS
{RL = lOOn; Ic= 2mA;
VCC= 5 V
See ligures 11. 13
3.9
48
/-IS
/-IS
{I F =16mA;R L =1.9Kn
See figures 12,14
3.9
110
/-IS
,..S
{IF= 16 mA; RL = 4.7 Kn
See ligures 12, 14
VCE(SAT)
.21
6.0
5.5
.40
Non-saturated
Turn-on time
ton
w
Turn-off time
toft
i=
Saturated
Turn-on time
CI)
:IE
CJ
Z
i:
U
I-
~
ton
toff
(Approximates a typical TTL interlace)
Turn-off time
Turn-on time
ton
Turn-off time
toff
(Approximates a typical low power TTL interface)
10
10
Surge isolation
Visa
4000
VDC
Steady state isolation
Visa
3000
3500
VAC·rms
VDC
Ri~o
2500
1011
VAC·rms
Isolation resistance
Isolation capacitance
e isa
Z
0
i=
>-
5pA-
~~
6
I
10
6. 0
4. 0
lOrnA
1 ~:o
B
9
10
11
C1298
Vce=O.4V
r1,6D
, , ,
'F =8 rnA
0
.,
Vee = lOV
TA;; 2SoC
'F - 4 rnA
2
0
.06
.04
IIIIII
II
,
.02
.0
1M
100K
RBe - BASE RESISTANCE C1332
1 KH
Fig. 5. Sensitivity vs. Base Resistance
'00
10KS2
l00Kn
RBE - (HI
lMH
10M!!
C1300
Fig. 6. Saturated CTR vs.
Base to Emitter Resistance
IF=
...........
"
60
~
~
"-
40
::;
,c~~mA
"
11:
0
z
20
Po
o
-25
5
...Y .4
V
'80
60
-50
60
40
n.
Fig. 4. Collector Current vs.
Collector to Emitter Voltage
80
'00
SOmA
I
'OK
'00
4
Forward Current
20mA
C1299
120
3
20
G
..........
2
Fig. 3. Collector Current vs.
IF.20mrT
z
:i
1
'F - (mAl
SOmA
5.0
140
V
o
C1297
o
VeE - v
4.06.0 10
I 160
, .A
1.0
2
0
Fig. 2. Collector Current vs.
Collector to Emitter Voltage
3pA-
.1.2.3.4 .5 .7
.10
.D4
>=
;-
.§ 10
.02
VeE - (Volts)
25#lA
/
[7
V
4
III
III
"
C1285
Fig. 1. Forward Voltage vs.
Forward Current
20
8
SmA
=
I
I...VVce<5V
6
4
I
/
0
'F
6
4
2
III
III
I
0
4
'F- lOmA
/
2. 0
6
lJl
/
0
;(
8
IF ..~mA
1/
0
25' C' 1-25' C
75 0 C
0
'F-SOmA
0
0
.If /1/
0
.g
0
'00
'00
+25
+50
+75
TEMP - (·C)
Fig. 7. Current Transfer Ratio
(unsaturated) vs. Temperature
+100
e1301
100
(TALI <'00 m1w
I
i-i;;;¥,'c
1000
1111,
10,000
I
100,000
OPERATING TIME - (Hoursl
C1251
Fig. 8. Current Transfer Ratio vs.
Operating Time
99
MCT270
TYPICAL SWITCHING CHARACTERISTICS
40
16
IF-3.2tot6mA
RL ·'.9KII
Vee -.6V
I.
VCC·:SV
RL '1.9 KII
RaE -0
30
12
!
!
10
,.;::
"- ""'-
r-
~ 20
I
w
r--~
1'-.....
:e
;::
r--
.....
'ooj",';'!
10
'on
o
2
10
"
10M
C1302
Fig. 9. Switch-on Time
'F Drive (saturated)
VS.
1M
tOOK
RaE - 1m
10K
. C1303
Fig. 10. Swltch·off Time v•• 8e.e to
Emitter Resistance (saturated)
INPUT
OV
I.
I
I
C1293
Cl294
Fig. 12.
Fig. ".
VCC- 6.DV
Vcc mS.OV
)
OUTPUT
OUTPUT
10011
CI296
Fig. 13.
100
Cl286
Fig. 14.
DESIGNER SERIES
PHOTOTRANSISTOR OPTOISOLATOR
MCT271
PACKAGE DIMENSIONS
DESCRIPTION
The MCT271 is a phototransistor-type optically
coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with·an NPN silicon phototransistor.
The device is supplied in a standard plastic six-pin
dual-in-line package.
t[J
IC1 - \('
IF
--~
T
SYMBOL
FEATURES
C1240
INCHES
MAX.
MAX.
.365
9.27
.210
6.86
,160
15~
NOTES
4.06
150
'.62RII',
0.36
8.26
1.78
2.79
0.56
2.16
.175
4.45
NOTES
1. INSTAL.LED POSITlON OF LEAD CENTERS
2. FOUR PLACES
3. OVERALL INSTAL.LED POSITION
4. THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
5. MINIMUM 0.100 INCH
ANODE~'
CATHODE
BASE
2
5
COLLfCTOR
3
4
EMITTER
• Controlled Current Transfer Ratio - 45% to 90%
(specified conditions)
• Maximum Turn-on time - 7 tIseconds
(specified condition)
• Maximum Turn-off time - 7 tIseconds
(specified condition)
• Surge Isolation Rating 4000 volts DC
3000 volts AC, rms
• Steady-state Isolation Rating 3500 volts DC
2500 volts AC, rms
• Underwriters Laboratory (U.L.) recognized
- File E50151
• VDE approval applied for
APPLICATIONS
•
•
•
•
•
Switching networks
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Cl339
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . . . _55°C to 150°C
Operating temperature. . . . . . . .. -55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . • . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.4 mW/oC
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 tis pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient . . . . . . .. 90 mW
Derate linearly from 25°C . . . . . . . . . . 1.2 mW/"C
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/oC
101
I
MCT271
ELECTRO-OPTICALCHARACTE.FtISTICS (25°C Temperature unfess otherwise specified) .'
TRANSFER CHARACTERISTICS
CHARACTERISTIC
Curren~·
. MAX.
SYMBOL
MIN.
TYP.
ICE/IF
45
12.5
67
90
ICB/IF
VCE(SAT)
.15
.14
ton
toff
UNITS
TEST CONDITIONS
Transfer Ratio,
collector to emitter fa>
U
C
%
%
I F =10mA;V CE =10V
IF= 16mA;V CE =0.4V
.40
%
V
I F =10mA;V CB=10V
IF = 16 mA; I C = 2 mA
4.9
7
ItS
4.5
7
/.IS
RL = 10011; Ic= 2 mA;
VCC = 5 V
See figures 11, 13
5.2
38
ItS
ItS
IF = 16 mA; RL = 1.9 KfI.
See figures 12, 14
4.9
90
ItS
ItS
IF = 16 mA; RL = 4.7 KI1
See figures 12, 14
Relative humidity'; 50%,
11_0'; 10 "A
1 second
Relative humidity .; 50%,
11_0'; 10"A
1 minute
VI.O= 500 VDC
Current Transfer Ratio,
collector to base
Saturation voltage
en
w
:;:
i=
CI
2
J:
U
I-
~
Non-saturated
Turn-on time
Turn-off time
Saturated
Turn-on time
ton
Turn·off time
toff
(Approximates a typical TTL interface)
Turn-on time
ton
Turn-off time
toff
(Approximates a typical low power TTL interface)
Surge isolation
Viso
4000
VDC
Steady state isolation
Visa
3000
3500
VAC·rms
VDC
Isolation resistance
Riso
2500
10"
VAC·rms
ohms
Isolation capacitance
Ciso
z
0
i=
ct
....
0
!!l
pF
.5
f= 1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC
w
C
0
Forward voltage
Forward voltage temp.
..
Reverse breakdown voltage
Junction capacitance
e
I-
::J
~
""0
I-
en
iii
2
ct
a:
lI-
.
::J
I-
::J
0
MIN.
VF
coefficient
BVR
CJ
3.0
TYP.
MAX.
UNITS
1.20
1.50
V
-1.8
25
50
65
.35
Reverse leakage current
IR
DC forward current gain
Breakdown voltage
Collector to emitter
hFE
100
420
BV CEO
30
70
7
45
130
10
Collector to base
Emitter to collector
Leakage current
Collector to emitter
BVCBO
BVECO
ICEO
5
mV/oC
V
pF
pF
10
"A
TEST CONDITIONS
IF=20mA
IR = 10"A
VF = 0 V, f = 1 MHz
VF= 1 V,f= 1 MHz
V R =3.0V
VCE = 5 V, Ic = 100"A
50
V
V
V
IC= 1.0mA,IF = 0
Ic= 10"A
IE = 100"A,IF = 0
nA
V CE =10V,I F =0
pF
pF
pF
VCE = 0, f = 1 MHz
V CB = 5, f = 1 MHz
V E B = 0, f = 1 MHz
Capacitance
Collector to emitter
Collector to base
Emitter to base
102
SYMBOL
8
20
10
MCT271
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
100
100
60
40
25° C: / _25 0 C
75° C
...
10
",
§
4 .•
~
2.•
,.
/Y/I
20
§
4 .•
_u
I..
/ /
V / /
..
1.0
-1.1
1.2
1.3
tA
1.5
.01
20
'8
,.'6
I'
--
2
veE" 5 V
"r-jm(
.02
.04
.10
C1285
I II
.2
.4.6 1.0
Fig. 2. Collector Current vs.
Collector to Emitter Voltage
,,"TTmT-...,
".s,
..- lS#JA
10
10IJA
2
3.01JA
1.0JJA
2.0
RBe - BASE RESISTANCE - n
Fig. 5. Sensitivity
VS.
90
8
9
10. 11
el2S7
II I II
I
1.0
.6
'F "'SmA
'F =4mA
.4
10Kn
lODKn
lMIl
RBE - 1m
Base Resistance
10Mn
C1289
Fig. 6. Saturated CTR vs.
Base to Emitter Resistance
100
'F.I.JM -
~
80
,80
~
70
..........
"
IU
'~"
5
6 7
'F - {mAl
'F = 16mA
C1331
Vce=10V
~::;
'0
6.0
'.0
2.0
1 KIl
C128S
Fig. 4. Collector Current vs.
Collector to Emitter Voltage
,
4
Vce- O.4V
.0'
5.0
VeE -v
3
.2
.10
.06
.0'
.02
5.A
1.0
100
60
.0
20
___ 20.A
_u
- ---
2
%
Fig. 3. Collector Current vs.
Forward Current
100 ...-......"rrTTmr-. . .
'8
1
C1286
25.A_
'2
.1.2.3.4 .5 .7
o
o
2.0 4.06.0 10
VeE - IVolts)
Fig. 1. Forward Voltage vs.
Forward Current
12
1, '0
I II
I
VF - (Voltsl
'6
14
'L.rt
III /
I I
.
'8
'F"'20mA
.
/
~,
-1:ffi
'/
...
/ / I
.•
,~
", ,..
/ I
I .•
20
60
4.
~/v
60
"
t;
~
;i
"",,'e
t:
~ 40
::;
= 2 rnA
N
so
'o~"
"'"
0
z
'0
30
-50
-25
+25
+50
60
;;::
z
0
Po ITOTALI =
100 mW
iT!"''''' I
TA7,~'c
+75
+100
C1290
Fig. 7. Current Transfer Ratio
(unsaturated) vs. Temperature
0
'00
'000
10,000
OPERATING TIME _. (Hours)
100,000
el2S1
Fig: 8. Current Transfer Ratio vs.
Operating Time
103
MCT271
TYPICAL SWITCHING CHARACTERISTICS
40
'F=3.2to16mA
il>..
Vee'"
~
RL'" L9 Kn
~~-----4-------1VCC=5V
RBE = 0
RL
30
.~
"
5V
1.9 Kn
II
3
~
;::
=
~~ i~ff
20
.~
10
3.2 4
16
12
C1291
'F- (rnA)
Fig. 9. Switch-on Time vs.
f F Drive (saturated)
, . . - -...... PULSE WIDTH
INPUT
DUTY CYCLE
1M
SOOK
RBE - fm
100K
50 K
C1292
Fig. 10. Switch·off Time vs. Base to
Emitter Resistance (saturated)
=
=
100 ps
10%
PULSE WIDTH = 100,/.ls
DUTY CYCLE = 10%
OV
OUTPUT
C1293
C1294
Fig. 11.
Fig. 12.
V CC =5.0V
Vcc= 5.0 V
}
OUTPUT
OUTPUT
lOon
104
C1295
C1296
Fig. 13.
Fig. 14.
DESIGNER SERIES
PHOTOTRANSISTOR OPTOISOLATOR
MCT272
I
I
PACKAGE DIMENSIONS
DESCRIPTION
The MCT272 is a phototransistor-type optically
coupled isolator. An infrared emittirig diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor.
The device is supplied in a standard plastic six-pin
dual-in-line package.
FEATURES
M"l~.
NOTES
9.27
6.86
4.06
".
.62R.I.
1
0.36
8.26
1.78
2.79
0.58
2.16
NOTES
'.INSTALLED POSITION OF LEAD CENTERS
• Controlled Current Transfer Ratio - 75% to 150%
(specified conditions)
• Maximum Turn-on time - 10 IIseconds
(specified condition)
• Maximum Turn-off time - 10llseconds
(specified condition)
• Surge Isolation Rating4000 volts DC
3000 volts AC, rms
• Steady-state Isolation Rating 3500 volts DC
2500 volts AC, rms
• Underwriters Laboratory (U.L.) recognized
- File E50151
• VDE approval applied for
2. FOUR PLACES
3. OVERALL. INSTALLED POSITION
4, THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
5. MINIMUM 0.100 INCH
ANOOE~'
APPLICATIONS
BASE
CATHODE' 2
5
COLLECTOR
3
4
EMITTER
•
•
•
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appl iance sensor systems
Power supply regulators
Industrial controls
C1339
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . . . _55°C to 150°C
Operating temperature . . . . . . . . . _55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.5 mWtC
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 liS pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient ........ 90 mW
Derate linearly from 25°C . . . . . . . . . . 1.2 mWtC
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/"C
105
MCT272·
ELECTRO-OPTICAL CHARACTERISTICS
(25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
(J
MIN.
TYP.
MAX.
UNITS
Current Transfer Ratio,
collector to eminer ial
Ice/IF
75
12.5
115
150
%
%
I F =10mA;V c e=10V
IF=16mA;Vc e=0.4V
Current Transfer Ratio,
collector to base
Saturation voltage
ICB/IF
VCe(SAT)
.15
.12
.40
%
V
IF=10mA;V CB =10V
IF=16mA;IC=2mA
ton
6.0
10
I'S
toff
5.5
10
I'S
RL = lOOn; Ic= 2mA;
VCC = 5 V
See ligures II, 13
3.9
48
I'S
IJS
IF= 16mA; RL = 1.9 Kn
See figures 12, 14
3.9
IJS
IJS
IF= 16mA;RL =4.7 Kn
See ligures 12, 14
C
Non·saturated
Turn-on time
III
w
:;
j:
Cl
Z
i(J
I-
3:
III
Z
0
j:
Turn-off time
Saturated
Turn-on time
ton
Turn-off time
toff
(Approximates a typical· TTL interlacel
Turn-on. time
ton
Turn-off time
toff
(Approximates a typical low power TTL interface)
110
Surge isolation
Visa
4000
VDC
Relative humidity';;; 50%,
11-0';;; 10IJA
Steady state isolation
Visa
3000
3500
VAC·rms
VDC
Isolation resistance
Riso
2500
10"
VAC·rms
ohms
1 second
Relative humidity .;;; 50%,
11-0';;; 10IJA
1 minute
VI.O = 500 VDC
Isolation capacitance
Ciso
...
c(
0
!!l
TEST CONDITIONS
SYMBOL
CHARACTERISTIC
pF
.5
1=1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC
w
C
Forward voltage
e
Forward voltage temp.
coefficient
Reverse breakdown voltage
0
I-
:J
"-
!:
a:
0
I-
III
iii
zc(
a:
l-
Junction capacitance
SYMBOL
MIN.
VF
BVR
CJ
3.0
TYP.
MAX.
UNITS
1.20
1.50
V
10
mVI"C
V
pF
pF
IJA
-1.8
25
50
65
.35
Reverse leakage current
IR
DC forward current gain
Breakdown voltage
Collector to emitter
Caliector to base
Emitter to collector
Leakage current
Collector to emitter
hFe
100
500
BVceo
BVCBO
BVeco
30
70
7
45
130
10
I CEO
5
TEST CONDITIONS
IF = 20mA
IR = 10IJA
VF=OV,f=IMHz
VF = 1 V, f = 1 MHz
V R =3.0V
V cE =5V,lc=100I'A
50
V
V
V
Ic = 1.0mA,IF =0
Ic= 10l'A
le= IOO IJA,IF=O
nA
V CE=10V,I F =0
pF
pF
pF
V CE = 0, f = 1 MHz
V CB = 5, f = 1 MHz
V EB =O,f=IMHz
I-
::I
"-
I-
:J
0
106
Capacitance
Collector to emitter
Coli ector to base
Emitter to base
B
20
10
MCT272
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
'00
'00
0
/Y/,
0
75° C
0
:;r
E.
,
6. 0
4. 0
25° C: /
_25 0 C
';i"
_u- 2. 0
/
0
6
4
/
20
IF
60
40
0
/
20
/
10
//
.§
6.0
4.0
_u
2.0
,
/ /
2
/
..
/
/
7
12
v
10
.Y
V
1.0
1,1
1.2
,
1.3
1.4
1.5
,8
.01.02.04
e.-r-
.10
C128S
I----""
.2
A.6 1.0
2.0
IF=50mA
'F. 20mA
"
f...---"
';V
~
80
i
3pA-
'60
,40
,
'--...
9
10
11
C129S
II
.6
4
e.- r
, .1'6
, ~l
,
IF "'SmA
IF"'4mA
fr
0
.0
.04
,
.02
.0
, Kll
'M
10Kn
100Kn
lMn
RBE - (il)
C1332
10Mn
C1300
Fig. 6. Saturated CTR vs.
Base to Emitter Resistance
100
'Fdmij -
80
~ 120
2. 0
Fig. 5. Sensitivity vs. Base Resistance
VeE~'OV
8
I ,IF
., 6
IIIIII
n
7
OA v
2
Vee" TOV
ABE - BASE RESISTANCE -
,80
~
~
Tflia5"e
lOOK
C1299
Fig. 4. Collector Current vs.
Collector to Emitter Voltage
6
,
.Y
I
5.0
VeE
0
6. 0
4. 0
,
40
,OK
v
60
40
§ 1.0
::>
<.>
, pA
VeE -
'00
lOrnA
V
>-
5pA-
.1.2.3.4.5.71.02.0
rT
I I
20 rnA
o
.Y
5
Fig. 3. Collector Current vs.
Forward Current
50mA
r
tOpA
4
20
z
o
;::
15p.A-
3
IF -(rnA)
I 160
20pA-
2
Cl297
~
10
1
Fig. 2. Collector Current vs.
Collector to Emitter Voltage
200 r -
V
./
o
o
4.060 10
VeE - (Volts)
25pA
V
V
V
/
/
V
VeE = 5 V
~
III
III
III/
/
20
"
,4
;;
III
JU
1/
J
Fig. 1. Forward Voltage vs.
Forward Current
~,
,6
lJI
IF=lOmA
'.0
V F -(Voltsl
'4
,8
iF' ~o ~~
IF -SmA
,/ /
'6
50 rnA
60
"-..
~
40
,00
Ic=lmA
0
80
60
-50
Po lTiTALI • 100 mW
0
-25
-+25'
+50
+75
TEMP - eel
Fig. 7. Current Transfer Ratio
(unsaturated) vs. Temperature
+100
C1301
,00
if"'" I
TAI~11rc
1000
10,000
100,000
OPERATING TIME - (Hours)
e125'
Fig. 8. Current Transfer Ratio vs.
Operating Time
107
MCT272
TYPICAL SWITCHING CHARACTERISTICS
40
16
14
RL"'1.9K!l
I F "'3.2to16mA
Vee "'.5 V
Vee" 5 V
RL -1.9Kn
RBE" 0
12
!
30
10
!
I
w
"
"-
;::
o
---
I
--
2
w
"
20
"
;::
1"-1"-
.....
ID[~
10
Ion
10
14
C1302
Fig. 9. Switch-on Time vs.
f F Drive (saturated)
10M
1M
100K
RBE - 1m
10K"
e1303
Fig. 10. Switch·off Time vs. 8ase to
Emitter Resistance (setureted)
INPUT
OV
OUTPUT
C1294
C1293
Fig. 11.
Fig. 12.
VCC =5.0V
Vee = 5.0 V
}
OUTPUT
OUTPUT
TOon
C1295
Fig. 13.
108
e12BB
Fig. 14.
DESIGNER SERIES
PHOTOTRANSISTOR OPTOISOLATOR
MCT273
PACKAGE DIMENSIONS
DESCRIPTION
The MCT273 is a phototransistor-type optically
coupled isolator. An infrared emitting diode
manufactured from specially grown gallium arsenide
is selectively coupled with an NPN silicon phototransistor_ The device is supplied in a standard plastic
six-pin dual-in-line package.
It[JCl -\-
!I
-I
L~=;=;=;dl
- - JIF.
C1240
TC1240
FEATURES
mm
MAX.
NOTES
9.27
6.86
4.06
,,'
0,36
8.26
1.78
2.79
0.56
2.16
.175
4.45
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
3. OVERALL INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
Controlled Current Transfer Ratio - 125% to 250%
(specified conditions)
1.1 Maximum Turn-on time - 20,useconds
(specified condition)
1.1 Maximum Turn-off time - 20,useconds
(specified condition)
• Surge Isolation Rating4000 volts DC
3000 volts AC, rms
II Steady-state Isolation Rating3500 volts DC
2500 volts AC, rms
• Underwriters Laboratory (U.L.) recognized
- File E50151
• VDE approval applied for
1\1
5. MINIMUM 0.100 INCH
ANODE~'''SE
CATHODE
2
3
.
5
COLLECTOR
4
EMITTER
APPLICATIONS
• Microprocessor board, reversible input/output
• Sensors to logic
• Logic to controls
• Appliance controls
• Industrial process control systems
Ct339
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . . . -55°C to 150°C
Operating temperature . . . . . . . . . _55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260° C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.5 mW/oC
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 ,us pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient . . . . . . . . 90 mW
Derate linearly from 25°C . . . . . . . . . . 1.2 mWtC
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/oC
109
MCT273
ELECTRO-OPTICAL CHARACTERISTICS (2SoC Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNITS
ICE/IF
125
12.5
200
250
%
%
I F =lOmA;V CE =lOV
IF= 16mA;VCE =0.4V
ICB/IF
VCE(SATI
.15
.20
%
.40
V
I F =lOmA;VCB=lOV
I F =16mA;l c =2mA
ton
7.6
20
I-ts
toft
6.6
20
I'S
ton
Turn-off time
toft
(Approximates a typical TTL interlace I
Turn-on time
ton
Turn-off time
toft
3.6
75
I'S
3.6
155
1'5
CHARACTERISTIC.
Current Transfer Ratio,
collector to emitter (ar
c.J
C
Current Transfer Ratio,
collector to base
Saturation voltage
Non-saturated
Turn-on time
II)
w
:;;
i=
CI
Z
~
c.J
I-
~
Turn-off time
Saturated
Turn-on time
I'S
I'S
TEST CONDITIONS
RL = 100 n; IC= 2 mA;
VCC = 5 V
See ligures 11, 13
IF= 16mA; RL = 1.9 Kn
See figures 12, 14
IF = 16 mA; RL = 4.7 K.n
See figures 12, 14
(Approximates a typical low power TTL interface)
Surge isolation
Visa
4000
VDC
Relative humidity
~
50%,
II_o.;;· lO ILA
Steady state isolation
Visa
3000
3500
VAC·rms
VDC
Rlso
2500
10"
VAC-rms
Isolation resistance
Isolation capacitance
elsa
Z
0
i=
«
..J
0
!!!
ohms
pF
.5
1 second
Relative humidity"" 50%,
II_o';; lO ILA
1 minute
V 1_0 = 500 VDC
1=1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC
C
w
Forward vol tage
e
0
Forward voltage temp.
I;:)
a..
~
a:
0
III)
iii
MIN.
VF
TYP.
MAX.
UNITS
1.20
1.50
V
Reverse leakage current
IR
-1.8
25
50
65
.35
DC forward current gain
hFE
280
coefficient
Reverse breakdown voltage
Junction capacitance
Breakdown voltage
Collector to emitter
Collector to base
Z
Emitter to collector
Leakage current
l-
Collector to emitter
«
a:
SYMBOL
BV R
CJ
BV CEO
BVCBO
BVECO
ICEO
3.0
30
70
7
mV/oC
10
V
pF
pF
ILA
IR ~ 10ILA
VF=OV,I=l MHz
VF ~ 1 V, 1=1 MHz
VR~ 3.0 V
VCE = 5 V, Ic = 100l'A
70
170
12
5
TEST CONDITIONS
IF=20mA
50
Ic~1.0mA,IF=0
V
V
V
Ic = 10ILA
IE = 1001'A, IF =0
nA
VCE = 10 V, IF ~ 0
pF
pF
pF
VCE
V CB
I-
;:)
a..
I;:)
0
110
Capacitance
Collector to emitter
Collector to base
Emitter to base
8
20
10
~
0, f = 1 MHz
5, f ~ 1 MHz
VEB~O,f=l MHz
~
MCT273
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
'00
100
I
20
/Y/I
20
25°'C /_25 0 C
75° C
;;:
I
_IJ..
/ I
/ I I
2. 0
0
IF
1 ::~
I
4. 0
E
1.3
1.4
1.5
14
--
;;:
12
E
10
2
8
.02
.04
.10
C1285
-
'"
IF.J±
25J.lA
o
roo
20J..lA
z
15,A_
......~ 175 I
z
~
150
~
6
7
8
9
10
"
C1304
IF=16mA
W
2.0
f--:I---
'F
f-I-
'F -4 rnA
8mA
I
.6
..Y .4
.2
.10
.06
.04
Vee;; lOV
lOOK
.02
.0 1
1 KU
1M
-.n
10 Kll
C1333
100 Kll
RBE - (ll)
lMll
10Mll
C1305
Fig. 6. Saturated CTR vs.
Base to Emitter Resistance
100
veE ~ 5 V
IF=4Lij -
~ 80
I
300
5
DAV
4. a
Fig. 5. Sensitivity VB. Base Resistance
35 a
4
§ 1,0
ABE - BASE RESlSTANCE
Fig. 4. Collector Current vs.
Collector to Emitter Voltage
«
T~,·25'e
C1244
VeE -V
3
10
6.0
V
10K
2
20
I
125
5.0
10
60a =vCE
40
lOrnA
1/
[l
'"
Fig. 3. Collector Current vs.
Forward Current
20mA
V
V/
~
1
'F - (mAl
tA!-
'"I 225
z
5.0.uA
2.0
o
C1242
250
1DjJA
1.0
a
2.0 4.06.010
.4.6 1.0
2.5p.A
.1.2.3.4.5 .7
/
Fig. 2. Collector Current vs.
Collector to Emitter Voltage
I,
30,A_
.....
.2
VeE - (Volts)
I-"""
~
V
10
IF - 2mA
I
/
,01
Forward Current
16
I
12
_u
/11
,
1.2
Fig. 1. Forward Voltage vs.
20
.§.
I'
,
VF -(Volts)
18
;;:
,I
.6
1.1
/
14
SmA
-\'~E .15 V
1.0
/ / /
,II / /
1.0
16
[I III
2.0
.6
.9
18
IF -lOrnA
11/
10
0
.§.
~art
40
y
20
... 41
~(t\p..
~pw·7
60
0
0
"'to
250
.............
~
""t::
I'---..
60
~
"""
150
100
~ 40
,c=2mA
N
:J
""
ii§
0
z
20
Po ITT ALI •
100
I""'".,1T'e
m1w
TA
50
-50
a
-25
+25
TEMP -
+50
(~C)
+75
+100
C1306
Fig. 7. Current Transfer Ratio
(unsaturated) vs. Temperature
100
1000
10,000
OPERATING TIME - (Hours)
100,000
C1251
Fig. 8. Current Transfer Ratio vs.
Operating Time
111
MCT273
TYPICAL SWITCHING CHARACTERISTICS
80
16r<-------,------,---~-,.
RL
:g
=.
1.9 Kfl
14~r_----~-------+VCC=5V
70
RBE '" 0
12~~----~~-----1~-----1
60
~
10
-
I F =3.2to16mA
Vee
= 5V
RL =1.9Kn
r--.
w
40
"r:
30
II
i'-r-...
50
~ I~f)
i"
20
10
12
3.2 4
IF - (mAl
16
50QK
1M
RBE -(m
C1307
Fig. 9. Switch·on Time vs.
IF Drive (saturated)
50 K
lOOK
C130B
Fig. 10. Switch·off Time vs. Base to
Emitter Resistance (saturated)
INPUT
ov
OUTPUT
I
I
I
I
I
I
-Jton~ toff
.c1293
I
t-
C1294
Fig. 11.
Fig. 12.
VCC =5.0V
VCC =5.0V
}
OUTPUT
OUTPUT
won
C1295
Fig. 13.
112
Cl296
Fig. 14.
DESIGNER SERIES
PHOTOTRANSISTOR OPTOISOLATOR
MCT274
I
I
PACKAGE DIMENSIONS
DESCRIPTION
The MCT274 is a phototransistor-type optically
coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN high-gain silicon phototransistor. The device is supplied in a standard plastic
six-pin dual-in-line package.
FEATURES
SYMBOL.
,
A
C
0
E
F
G
H
J
<
L
M
N
INCHES
mm
MAX.
MAX,
....
NOTES
.355
9.21
.210
.160
4.06
15"
15"
.300 Ref. 7.62 Ref.
.014
0.38
.325
8.26
.070
1.78
.110
2.79
.022
0.66
2.16
.065
.175
4.46
P
1
2
3
4
5
NOTES
1. INSTALLED POSITION OF LEAD CENTERS
2. FOUR PLACES
• Controlled Current Transfer Ratio - 225% to 400%
(specified conditions)
• Maximum Turn-on time - 25 Ilseconds
(specified condition)
• Maximum Turn-off time - 25 Ilseconds
(specified condition) .
• Surge Isolation Rating 4000 volts DC
3000 volts AC, rms
• Steady-state Isolation Rating 3500 volts DC
2500 volts AC, rms
51 Underwriters Laboratory (U.L.) recognized
- File E50151
• VDE approval applied for
3. OVERALL INSTALLED POSITION
4. THESE MEASUREMENTS ARE MADE FROM
THE SEATING PLANE
6. MINIMUM 0.100 INCH
ANOOE~"ASE
CATHODE
2
3
.
5
COLLECTOR
4
EMITTER
APPLICATIONS
• Control Relays
• Digital controls
• Microprocessor controls
• Replace slow photodarlington types with better
switching speeds and equivalent gain devices
• Multiple gate interface
C1339
ABSOLUTE MAXIMUM RATINGS
TOTAL PACKAGE
Storage temperature . . . . . . . . . . _55°C to 150°C
Operating temperature. . . . . . . .. _55°C to 100°C
Lead temperature
(Soldering, 10 sec) . . . . . . . . . . . . . . . . . . 260°C
Total package power dissipation @ 25°C
(LED plus detector) . . . . . . . . . . . . . . . . 260 mW
Derate linearly from 25°C . . . . . . . . . . 3.5 mWtC
INPUT DIODE
Forward DC current . . . . . . . . . . . . . . . . . 60 mA
Reverse voltage . . . . . . . . . . . . . . . . . . . . . . 3 V
Peak forward current
(1 Ils pulse, 300 pps) . . . . . . . . . . . . . . . .. 3.0 A
Power dissipation 25°C ambient . . . . . . . . 90 mW
Derate linearly from 25°C . . . . . . . . . . 1.2 mWtC
OUTPUT TRANSISTOR
Power dissipation @ 25°C . . . . . . . . . . . . . 200 mW
Derate linearly from 25°C . . . . . . . . . 2.67 mW/oC
113
MCT274
ELECTRO-OPTICAL CHARACTERISTICS (25°C Temperature unless otherwise specified)
TRANSFER CHARACTERISTICS
CHARACTERISTIC
Curren't Transfer Ratio,
collector to emitter (a)
tJ
SYMBOL
MIN.
TYP.
MAX.
ICE/IF
225
12.5
305
400
Q
UNITS
%"
TEST CONDITIONS
%
IF =.10 mA; VCE = 10 V
IF= 16mA;V CE =0.4V
Current Transfer Ratio,
ICB/IF
VCE(SAT)
.15
.16
.40
%
V
I F =10mA;V CB =10V
I F =16mA;I C =2mA
Turn-on time
ton
9.1
25
ItS
Turn-off time
toff
7.9
25
ItS
R L = 100.l1;I C =2mA;
VCC = 5 V
See figures 1" 13
ton
3.0
95
ItS
3.0
185
ItS
collector to base
Saturation voltage
Non-saturated
en
w
:;;
j:
C!l
Z
Saturated
i
Turn-on time
Turn-off time
~
en
Turn-on time
ton
Turn-off time
toft
tJ
I-
toff
ItS
IF=16mA;R L =I.9K.I1
See figures 12, 14
(Approximates a typical TTL interfacel
ItS
IF=16mA;RL=4.7Kn
See figures 12, 14
(Approximates a typical low power TTL interface)
Z
0
j:
Surge isolation
Visa
4000
VDC
Steady state isolation
Visa
3000
3500
VAC-rms
VDC
VAC-rms
Isolation resistance
Risa
2500
10"
Isolation capacitance
Cisa
oct
...J
0
!!l
ohms
pF
.5
Relative humidity ..; 50%,
11_0"; 10"A
t = 1 second
Relative humidity"; 50%,
11_0';; 10"A
t = 1 minute
V 1_0 = 500 VDC
f = 1 MHz
INDIVIDUAL COMPONENT CHARACTERISTICS
CHARACTERISTIC.
Q
w
Forward voltage
e
0
Forward voltage temp.
I-
Reverse breakdown voltage
Junction capacitance
...:::I
~
a:
0
I-
en
iii
Z
oct
a:
l-
SYMBOL
MIN.
VF
coefficient
TYP.
MAX.
UNITS
1.20
1.50
V
Reverse leakage current
IR
-1.8
25
50
65
.35
DC forward current gain
Breakdown voltage
Collector to emitter
hFE
360
Collector to base
Em itter to collector
Leakage current
Collector to emitter
BV R
CJ
BV CEO
BV CBO
BVECO
I CEO
3.0
30
70
7
mVI"C
V
pF
pF
10
IR = 10"A
V F = 0 V, f = 1 MHz
V F = 1 V, f = 1 MHz
V R = 3.0 V
V cE =5V,l c =100"A
70
170
12
5
"A
TEST CONDITIONS
IF = 20 mA
50
V
V
V
IC = 1.0 mA, IF = 0
Ic = 10"A
IE=100"A,I F =0
nA
VCE = 10 V, IF = 0
pF
pF
pF
V CE =O,f=1 MHz
V CB =5,f=1 MHz
V EB =O,f=1 MHz
I-
...
:::I
I-
:::I
0
114
Capacitance
Collector to emitter
Collector to base
Emitter to base
8
20
10
MCT274
TYPICAL ELECTRICAL CHARACTERISTIC CURVES (25°C Free air temperature unless specified)
100
100
eo
60
40
40
/Y/I
I.
;;: ...
.g
2D
75" C
c:1
10
;;:
I
L 1 J
I..
..
...•
I .•
I / I
II / I
..
1.0
1.1
1.2
1.3
1.4
1.5
'6
--"""
'4
;;
.g
'2
!:
8
;
f-"
3pA
a
2.0
L
~ 100
, pA
I
Vee
RBE - BASE RESISTANCE -
100
VeE - 5 V
"@
500
I
8
9
10
11
C1310
II
=
n
I
'F'" 16mA
'F
2.0
8mA
f/
1.0
.6
.4
IOV
/I
.02
.01
, Kn
10Kfl'
100Kf2
lMrt
RBE - (n)
C1334
10Mn
C1311
Fig. 6. Saturated CTR vs.
Base to Emitter Resistance
Fig. 5. Sensitivity vs. Base Resistance
600
7
.'0
.06
.04
,M
100K
C 1288
Fig. 4. Collector Current vs.
Collector to Emitter Voltage
;;:
.g
2
I
10K
VeE -v
20m~
lOrnA
~~1=25"C
5.0
6
VCE ,Q.4V
.2
ili
5
'0
6.0
4.0
LV
300
SpA
I
4
'F - (rnA)
50 rnA
-v
./
z
~ 200
3
20
~
'OpA _ _
2
Fig. 3. Collector Current vs.
Forward Current
I 400
~
1
V
C1309
"
15pA
./
o
o
2.0 4.06.0 10
100
60
40
z
o
"""" 20llA
>>-
1.0
.4 ,6 1.0
500
f-"
.1.2.3.4.5.7
I
I
VeE - (Voltsl
I,
25pA_
-
'0
.2
I
V
/
2mA
Fig. 2. Collector Current vs.
Collector to Emitter Voltage
Fig. 1. Forward Voltage vs.
Forward Current
'8
.10
V
<"CE '5V
I
I
.01,02.04
24
.9 1S
/11
C1285
20
.g
'F
.2
VF -IVoltsl
1......-
«
I II
I
2.0
2
32
~A
'j
...
.g ..•
I I
2.0
~o~~
20
_25 G C
1/
4 ••
I
_IJ..
25"
40
'F =20mA
I,dmij
80
-
a:
t;
400
:i
r-- ..........
"@
~ 300
..............
t;
200
;::
~
Ie = 2 rnA
o
w 40
K
N
"a:
"oz
«
'00
-50
-25
+25
TEMP - (CC)
+50
60
+75
+100
C1312
Fig. 7. Current Transfer Ratio
(unsaturated) vs. Temperature
0
Pony"ooT
'\7;~CC
0
'00
1000
10,000
OPERATING TIME _. (Hours)
100,000
C1251
Fig. 8. Current Transfer Ratio vs.
Operating Time
115
MCT274
TYPICAL SWITCHING CHARACTERISTICS
160
16
,.
I F =3.2to16mA
RL "'1.9Kn
VCC=SV
140 HH--t1I1-II-t+It-+ Vee·= 5 V
RL ;; 1.9Kn
120
RBe ;; 0
12
!
10
!100
I
I
!i:
;::
'-
l\:
80
;:: 60
"'"
.0
t on -
r--
20
12
3.2 4
16
5~K
1M
RBe - (n)
C1313
IF -(rnA)
Fig. 9. Switch-on Time vs.
IF Drive (saturated)
TOOK,
50 K
C1314
Fig. 10. Switch·off Time vs. Base to
Emitter Resistance (saturated)
INPUT
ov
I
I
I
I
~
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