1984_Motorola_Bipolar_Power_Transistor_and_Thyristor_Data_Section_1 1984 Motorola Bipolar Power Transistor And Thyristor Data Section 1

User Manual: 1984_Motorola_Bipolar_Power_Transistor_and_Thyristor_Data_Section_1

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Power Transistors
Index and Cross Reference
Selector Guide
Data Sheets

11-.

l1li

Thyristors
Index and Cross Reference
Selector Guide
Data Sheets

TMOS Power MOSFET

tl-.

Selector Guide

Rectifiers
Selector Guide

Regulator and Reference Diodes
Selector Guide

"t-.

Outline Dimensions/Leadform . - .
Options/Mounting Hardware
& Techniques
A'pplication Literature

Chipscretes, Designers', Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric,
Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
Annular Semiconductors are patented by Motorola Inc.

ii

MOTOROLA
POWER DEVICE DATA
Prepared by
Technical Information Center

This book presents technical data for Motorola's broad line of silicon
power transistors, thyristors, and triggers. Complete specifications are provided in the form of data sheets and accompanying selection guides provide
a quick comparison of characteristics to simplify the task of choosing the
best device for a circuit. In addition, separate selector guides for power
MOSFETs, power rectifiers, as well as voltage regulator and reference diodes
offer a quick technical overview of Motorola's power discrete device lines fo'r
power supply and power circuit designs.
The information in this book has been carefully checked and is believed to
be accurate; however, no responsibility is assumed for inaccuracies.
Motorola reserves the right to make changes without further notice to any
products herein to improve reliability, function or design. Motorola does not
assume any liability arising out of the application or use of any product or
circuit described herein; neither does it convey any license under its patent
rights nor the rights of others. Motorola and ® are registered trademarks of
Motorola, Inc. Motorola, Inc. is an Equal Employment Opportunity/Affirmative Action Employer.
Motorola, Inc. general policy does not recommend the use of its components in life support applications wherein a failure or malfunction of the
component may directly threaten life or injury. Per Motorola Terms and
Conditions of Sale, the user of Motorola components in life support applications assumes all risks of such use and indemnifies Motorola against all
damages.

Fourth Edition
@MOTOROLA INC. 1984
Previous Edition @1982
"All Rights Reserved"

Printed in U.S.A.

iii

iv

11'1
MOTOROLA
POWER TRANSISTORS
IN BRIEF
Wide Range of Transistor Specifications
Bipolar transistors, NPNs and PNPs, S,ingle and multiple (Darlington) transistor
structures, metal and plastic packages, Motorola's inventory of more than 1100
standard (off-the-shelf) power transistors covers the widest range of specifications
for virtually every potential applications requirement.
Current Range - 0.5 to 300 Amperes
Voltage Range - 25 to 1500 Volts
Power Dissipation Range - 5 to 500 Watts.
Darlingtons
Consisting of two transistors, up to two resistors, and (up to) two diodes on a
single chip, Darlington transistors achieve gain figures up to 20,000 in a single
package. Rapid line expansion, and the resulting widespread implementation make
Motorola Darlingtons highly cost-effective in a fast growing number of
applications.
Chips, Chips, Chips!
Designing a hybrid? Motorola's total repertoire of power transistors is available ..
UNENCAPSULATED: Check with your Motorola Sales representative for price and
delivery.
Specials Unlimited
Need a unique transistor with specifications not available off-the-shelf? Chances
are Motorola can produce it quickly and inexpensively. Routine use of four major
power processes and more than two decades of experience in the pioneering of new
structures and geometries provide the insight and capability to meet any required
specification within the limits of today's technology.

v

POWER
TRANSISTORS
Index and Cross Reference

The table on the subsequent pages contains an
Alphanumeric index of Silicon power transistors
currently manufactured and available to the
industry.
The column headed "Similar" lists units with characteristics that might represent suitable replacements. In cases where such a replacement is
contemplated, the Motorola device data sheet
should be carefully compared with one for the
device being replaced to determine any variations
that could affect circuit performance.

1-1

1m

INDEX CROSS-REFERENCE

-

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

2N1487
2N1488
2N1489
2N1490
2N1702
2N3016
2N3021
2N3022
2N3023
2N3024

2N5877
2N5878
2N5877
2N5878
2N5877
2N5337
2N3789
2N3789
2N3789
2N3791

1-196
1-196
1-196
1-196
1-196
1-158
1-112
1-112
1-112
1-112

2N3667
2N3713
2N3714
2N3715
2N3715JAN
2N3715JTX
2N3715JTXV
2N3716
2N3716JAN
2N3716JTX

2N3713
2N3714
2N3715
2N3715JAN
2N3715JTX
2N3715JTXV
2N3716
2N3716JAN
2N3716JTX

1-199
1-82
1-82
1-82
1-49
1-49
1-49
1-82
1-49
1-49

2N3025
2N3026
2N3054
2N3054A
2N3055
2N3055A
2N3055H
2N3055JAN
2N3055SD
2N3055UB

2N3791
2N3791

2N3055A
2N5302JAN
2N3055A
2N3055A

1-112
1-112
1-58
1-58
1-62
1-65
1-65
1-50
1-65
1-65

2N3716JTXV
2N3719
2N3720
2N3738
2N3739
2N3739JAN
2N3739JTX
2N3739JTXV
2N3740
2N3740A

2N3716JTXV
2N3719
2N3720
2N3738
2N3739
2N3739JAN
2N3739JTX
2N3739JTXV
2N3740
2N3740A

1-49
1-88
1-88
1-93
1-93
1-49
1-49
1-49
1-97
1-97

2N3076
2N3079
2N3080
2N3171
2N3172
2N3173
2N3174
2N3183
2N3184
2N3185

2N6249
2N5838
2N6542
2N3789
2N3789
2N3790
2N6226
2N3789
2N3789
2N3790

1-257
1-193
1-309
1-112
1-112
1-112
1-189
1-112
1-112
1-112

2N3740JAN
2N3740JTX
2N3740JTXV
2N3741
2N3741A
2N3741JTX
2N3741JTXV
2N3766
2N3766JAN
2N3766JTX

2N3740JAN
2N3740JTX
2N3740JTXV
2N3741
2N3741A
2N3741JTX
2N3741JTXV
2N3766
2N3766JAN
2N3766JTX

1-49
1-49
1-49
1-97
1-97
1-49
1-49
1-100
1-49
1-49

2N3186
2N3195
2N3196
2N3197
2N3198
2N3202
2N3203
2N3204
2N3232
2N3233

2N6226
2N3789
2N3789
2N3790
2N6226
2N3719
2N3720
2N6303
2N5877
2N5632

1-189
1-112
1-112
1-112
1-189
1-88
1-88
1-88
1-196
1-178

2N3766JTXV
2N3767
2N3767JAN
2N3767JTX
2N3767JTXV
2N3771
2N3772
2N3773
2N3788
2N3789

2N3766JTXV
2N3767
2N3767JAN
2N3767JTX
2N3767JTXV
2N3771
2N3772
2N3773

1-49
1-100
1-49
1-49
1-49
1-104
1-104
1-108
1-309
1-112

2N3234
2N3235
2N3236
2N3237
2N3238
2N3239
2N3240
2N3418
2N3419
2N3420

2N5760
2N3055
2N5632
2N5302
2N5882
2N5882
2N5882
2N5336
2N5336
2N5336

1-189
1-62
1-178
1-154
1-199
1-199
1-199
1-158
1-158
1-158

2N3790
2N3791
2N3791JAN
2N3791JTX
2N3791JTXV
2N3792
2N3792JAN
2N3792JTX
2N3792JTXV
2N3863

2N3790
2N3791
2N3791JAN
2N3791JTX
2N3791JTXV
2N3792
2N3792JAN
2N3792JTX
2N3792JTXV

2N5336

1-158
1-69
1-71
1-74
1-74
1-74
1-74
1-76
1-76
1-76

2N3864
2N3865
2N3867
2N3867JAN
2N3867JTX
2N3867JTXV
2N3867SJAN
2N3867SJTX
2N3867SJTXV
2N3868

2N3421
2N3441
2N3442
2N3445
2N3446
2N3447
2N3448
2N3583
2N3584
2N3585

2N3054
2N3054A
2N3055
2N3055A

2N3441
2N3442
2N3445
2N3446
2N3447
2N3448
2N3583
2N3584
2N3585

*Consult factory if a direct replacement is necessary
**To be introduced. Contact factory for Data Sheet.

1-2

2N5881

2N6542
2N3789

2N3715
2N5632
2N5634
2N3867
2N3867JAN
2N3867JTX
2N3867JTXV
2N3867SJAN
2N3867SJTX
2N3867SJTXV
2N3868

1-112
1-112
1-49
1-49
1-49
1-112
1-49
1-49
1-49
1-82
1-178
1-178
1-88
1-49
1-49
1-49
1-49
1-49
1-49
1-88

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

2N5347

1-49
1-49
1-49
1·49
1·49
1-49
1·170
1·170
1·116
1·166

2N4910
2N4911
2N4912
2N4913
2N4914
2N4915
2N4918
2N4919
2N4920
2N4921

2N3997
2N3998
2N3999
2N4000
2N4001
2N4002
2N4003
2N4070
2N4071
2N4111

2N5347
2N5347
2N5347
2N5347
2N5339
2N6274
2N6274
2N6306
2N6306
2N3715

1·166
1·166
1-166
1·166
1-158
1·261
1-261
1·274
1·274
1·82

2N4922
2N4923
2N4998
2N4999
2N5000
2N5001
2N5002
2N5003
2N5004
2N5005

2N4113
2N4115
2N4116
2N4231A
2N4232A
2N4233A
2N4240
2N4296
2N4297
2N4298

2N3716
2N5347
2N5347

1-82
1-166
1-166
1·120
1·120
1·120
1·76
1-93
1·93
1·124

2N5034
2N5035
2N5036
2N5037
2N5038
2N5038JAN
2N5038JTX
2N5038JTXV
2N5039
2N5039JAN

1·124
1·158
1·158
1·158
1-158
1-158
1·158
1·88
1-71
1·174

2N5039JTX
2N5039JTXV
2N5050
2N5051
2N5052
2N5067
2N5068
2N5069
2N5083
2N5084

1·128
1-128
1·124
1·124
1-50
1·50
1-50
1·158
1·128
1·128

2N5085
2N5147
2N5148
2N5149
2N5150
2N5151
2N5152
2N5153
2N5154
2N5157

1-128
1·189
1·189
1·189
1·189
1·189
1-189
1-112
1·112
1-112

2N5190
2N5191
2N5192
2N5193
2N5194
2N5195
2N5202
2N5239
2N5240
2N5241

2N3868JAN
2N3868JTX
2N3868JTXV
2N3868SJAN
2N3868SJTX
2N3868SJTXV
2N3878
2N3879
2N3902
2N3996

2N4299
2N4300
2N4301
2N4305
2N4307
2N4309
2N4311
2N4314
2N4347
2N4348
2N4387
2N4388
2N4398
2N4399
2N4399JAN
2N4399JTX
2N4399JTXV
2N4877
2N4S98
2N4899
2N4900
2N4901
2N4902
2N4903
2N4904
2N4905
2N4906
2N4907
2N4908
2N4909

2N3868JAN
2N3868JTX
2N3868JTXV
2N3868SJAN
2N3868SJTX
2N3868SJTXV
2N5428
2N5430
2N3902

2N4231A
2N4232A
2N4233A
2N4240
2N3738
2N3738
2N6235
2N6235
2N5337
2N5337
2N5337
2N5337
2N5339
2N5337
2N3868
2N4347
2N5630"
2N4898
2N4898
2N4398
2N4399
2N4399JAN
2N4399JTX
2N4399JTXV
2N5337
2N4898
2N4899
2N4900
2N6226"
2N6226"
2N6226"
2N6226"
2N6226"
2N6226"
2N3791
2N3791
2N3792

"Consult factory if a direct replacement is necessary.
""To be introduced. Contact factory for Data Sheet.

1-3

Motorola
Direct
Replacement

Motorola
Similar
Replacement
2N3054"
2N3054"

2N4912
2N5758"
2N5758"
2N5758"
2N4918
2N4919
2N4920
2N4921
2N4922
2N4923
2N5347
2N6187
2N5347
2N6187
2N5347
2N6187
2N5347
2N6187
2N3055
2N3055
2N3055
2N3055
2N5038
2N5038JAN
2N5038JTX
2N5038JTXV
2N5039
2N5039JAN
2N5039JTX
2N5039JTXV
2N5050
2N5051
2N5052

Page #
1·58
1·58
1·131
1·189
1·189
1·189
1·134
1-134
1·134
1-138
1-138
1·138
1·166
1·245
1·166
1·245
1·166
1·245
1-166
1·245
1·62
1·62
1·62
1-62
1·142
1·50
1·50
1-50
1·142
1-50

2N5758"
2N5758"
2N5758"
2N5347
2N5347

1·50
1·50
1-144
1·144
1·144
1-189
1·189
1·189
1·166
1·166

2N5347
2N6191
2N5337
2N6191
2N5337
2N6191
2N5337
2N6191
2N5337
2N6545

1·166
1·248
1·158
1·248
1·158
1·248
1·158
1-248
1·158
1-315

2N5428
2N6306
2N6544
2N3902"

1-146
1-146
1·146
1·150
1·150
1·150
1·170
1·274
1·315
1·116

2N5190
2N5191
2N5192
2N5193
2N5194
2N5195

III

INDEX CROSS-REFERENCE (Continued)

III

Induslry
Part Number

Motorola
Direct
Replacement

2N5264
2N5284
2N5285
2N5286
2N5287
2N5293
2N5294
2N5295
2N5296
2N5297
2N5298
2N5301
2N5302
2N5302JAN
2N5302JTX
2N5302JTXV
2N5303
2N5303JAN
2N5303JTX
2N5303JTXV
2N5326
2N5333
2N5334
2N5335
2N5336
2N5337
2N5338
2N5339
2N5344
2N5345
2N5346
2N5347
2N5348
2N5349
2N5384
2N5385
2N5386
2N5387
2N5388
2N5389
2N5404
2N5405
2N5406
2N5407
2N5408
2N5409
2N5410
2N5411
2N5427
2N5428
2N5429
2N5430
2N5466
2N5467
2N5477
2N5478
2N5479
2N5480
2N5490
2N5491

Motorola
Similar
Replacement

Motorola
Direct
Replacement

Molorola
Similar
Replacement

Page #

Industry
Part Number

2N6249
2N5347
2N5347
2N6189
2N6189
2N6123
2N6123
2N6121
2N6121
2N6122

1-257
1-166
1-166
1-245
1-245
1-241
1-241
1"241
1-241
1-241

2N5492
2N5493
2N5494
2N5495
2N5496
2N5497
2N5508
2N5539
2N5559
2N5575

2N6292
2N6292
2N6290
2N6290
2N6292
2N6292
2N5428
2N6379
2N5633
2N5685

1-238
1-238
1-238
1-238
1-238
1-238
1-170
1-285
1-178
1-185

2N6122

1-241
1-154
1-154
1-50
1-50
1-50
1-154
1-50
1-50
1-50

2N5578
2N5598
2N5600
2N5602
2N5604
2N5606
2N5610
2N5612
2N5614
2N5616

2N5685
2N5428
2N5428
2N5428
2N5430
2N5428
2N5428
2N5430
2N3448
2N3448

1-185
1-170
1-170
1-170
1-170
1-170
1-170
1-170
1-74
1-74

2N5347
2N6303
2N5337
2N5337

1-166
1-88
1-158
1-158
1-158
1-158
1-158
1-158
1-162
1-162

2N5618
2N5629
2N5630
2N5631
2N5632
2N5633
2N5634
2N5651
2N5655
2N5656

2N3448

1-74
1-174
1-174
1-174
1-178
1-178
1-178
1-254
1-182
1-182

1-166
1-166
1-166
1-166
1-245
1-245
1-142
1-319
1-319
1-319

2N5657
2N5660
2N5664
2N5665
2N5671
2N5672
2N5678
2N5683
2N5683JAN
2N5683JTX

2N5683
2N5683JAN
2N5683JTX

1-182
1-254
1-254
1-254
1-282
1-282
1-285
1-185
1-50
1-50

1-248
1-248
1-248
1-248
1-245
1-245
1-245
1-245
1-170
1-170

2N5683JTXV
2N5684
2N5684JAN
2N5684JTX
2N5684JTXV
2N5685
2N5685JAN
2N5685JTX
2N5685JTXV
2N5686

2N5683JTXV
2N5684
2N5684JAN
2N5684JTX
2N5684JTXV
2N5685
2N5685JAN
2N5685JTX
2N5685JTXV
2N5686

1-50
1-185
1-50
1-50
1-50
1-185
1-50
1-50
1-50
1-185

1-170
1-170
1-315
1-315
1-166
1-166
1-166
1-166
1-238
1-238

2N5686JAN
2N5686JTX
2N5686JTXV
2N5729
2N5730
2N5733
2N5734
2N5737
2N5738
2N5739

2N5686JAN
2N5686JTX
2N5686JTXV

1-50
1-50
1-50
1-158
1-158
1-261
1-282
1-196
1-178
1-196

2N5301
2N5302
2N5302JAN
2N5302JTX
2N5302JTXV
2N5303
2N5303JAN
2N5303JTX
2N5303JTXV

2N5336
2N5337
2N5338
2N5339
2N5344
2N5345
2N5346
2N5347
2N5348
2N5349
2N6187
2N6187
2N5038
2N6546
2N6546
2N6546
2N6191
2N6192
2N6191
2N6193
2N6187
2N6189
2N6187
2N6189
2N5427
2N5428
2N5429
2N5430
2N6545
2N6545
2N5347
2N5347
2N5349
2N5349
2N6290
2N6290

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet.

1-4

2N5629
2N5630
2N5631
2N5632
2N5633
2N5634
2N6235
2N5655
2N5656
2N5657
2N6233
2N6233
2N6235
2N6338
2N6339
2N6378

2N5337
2N5347
2N6274
2N6338
2N5878
2N6229
2N5878

Page #

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number
2N5740
2N5741
2N5742
2N5743
2N5744
2N5745
2N5745JAN
2N5745JTX
2N5745JTXV
2N5758
2N5759
2N5760
2N5804
2N5805
2N5838
2N5839
2N5840
2N5867
2N5868
2N5869
2N5870
2N5871
2N5872
2N5873
2N5874
2N5875
2N5876
2N5877
2N5878
2N5879
2N5880
2N5881
2N5882
2N5883
2N5884
2N5885
2N5886
2N5929
2N5930
2N5931

Motorola
DIrect
Replacement

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page II

Industry
Part Number

1-178
1-203
1-174
1-203
1-463
1-124
1-50
1-50
1-50
1-189

2N5983
2N5984
2N5985
2N5986
2N5987
2N5988
2N5989
2N5990
2N5991
2N6021

1-189
1-189
1-274
1-309
1-193
1-193
1-193
1-112
1-112
1-82

2N6022
2N6023
2N6024
2N6025
2N6026
2N6029
2N6030
2N6031
2N6032
2N6033

1-82
1-112
1-112
1-82
1-82
1-196
1-196
1-196
1-196
1-199

2N6034
2N6035
2N6036
2N6037
2N6038
2N6039
2N6040
2N6041
2N6042
2N6043

2N6034
2N6035
2N6036
2N6037
2N6038
2N6039
2N6040
2N6041
2N6042
2N6043

1-217
1-217
1-217
1-217
1-217
1-217
1-221
1-221
1-221
1-221

2N6338
2N6338
2N6341

1-199
1-199
. 1-199
1-203
1-203
1-203
1-203
1-282
1-282
1-282

2N6044
2N6045
2N6049
2N6050
2N6051
2N6051JAN
2N6051JTX
2N6051JTXV
2N6052
2N6052JAN

2N6044
2N6045
2N6049
2N6050
2N6051
2N6051JAN
2N6051JTX
2N6051JTXV
2N6052
2N6052JAN

1-221
1-221
1-225
1-228
1-228
1-50
1-50
1-50
1-228
1-50

2N6338
2N6338
2N6341
2N6338
2N6341
2N6318
2N6317
2N6317
2N5882
2N5882

1-282
1-282
1-282
1-282
1-282
1-278
1-278
1-278
1-199
1-199

2N6052JTX
2N6052JTXV
2N6053
2N6054
2N6055
2N6056
2N6057
2N6058
2N6058JAN
2N6058JTX

2N6052JTX
2N6052JTXV
2N6053
2N6054
2N6055
2N6056
2N6057
2N6058
2N6058JAN
2N6058JTX

1-50
1-50
1-232
1-232
1-232
1-232
1-228
1-228
1-50
1-50

MJ15003

1-720
1-207
1-207
1-207
1-210
1-210
1-210
1-833
1-833
1-213

2N6058JTXV
2N6059
2N6059JAN
2N6059JTX
2N6059JTXV
2N6077
2N6078
2N6079
2N6098
2N6099

2N6058JTXV
2N6059
2N6059JAN
2N6059JTX
2N6059JTXV
2N6077
2N6078

1-50
1-228
1-50
1-50
1-50
1-236
1-236
1-254
1-301
1-301

2N6229
2N5883
2N6029
2N5883
MJ4502
2N5745
2N5745JAN
2N5745JTX
2N5745JTXV
2N5758
2N5759
2N5760
2N6306
2N6542
2N5838
2N5839
2N5840
2N3789'
2N3790'
2N3713'
2N3714'
2N3789'
2N3790'
2N3713'
2N3714*
2N5875
2N5876
2N5877
2N5878
2N5879
2N5880
2N5881
2N5882
2N5883
2N5884
2N5885
2N5886

2N5932
2N5933
2N5935
2N5936
2N5937
2N5954
2N5955
2N5956
2N5970
2N5971
2N5972
2N5974
2N5975
2N5976
2N5977
2N5978
2N5979
2N5980
2N5981
2N5982

Motorola
Similar
Replacement

2N5974
2N5975
2N5976
2N5977
2N5978
2N5979
MJE2955'
MJE2955'
2N5988'

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data Sheet.

1-5

MJE3055'
MJE3055'
2N5991,
2N5986
2N5987
2N5988
2N5989
2N5990
2N5991
2N6126
2N6126
2N6124
2N6124
2N6125
2N6125
2N6029
2N6030
2N6031
2N6275
2N6277

2N6235
2N6487
2N6487

Paga II
1-833
1-833
1-213
1-213
1-213
1-213
1-213
1-213
1-213
1-241
1-241
1-241
1-241
1-241
1-241
1-174
1-174
1-174
1-261
1-261

INDEX CROSS·REFERENCE (Continued)

l1li

Industry
Part Number
2N6100
2N6101
2N6102
2N6103
2N6106
2N6107
2N6108
2N6109
2N6110
2N6111
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126
2N6127
2N6128
2N6129
2N6130
2N6131
2N6132
2N6133
2N6134
2N6175
2N6176
2N6177
2N6178
2N6179
2N6180

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Motorola
Direct
Replacement

Motorola
Similar
Replacemant

Page #

Industry
Part Number

1-301
1-301
1-301
1-301
1-238
1-238
1-238
1-238
1-238
1-238

2N6251
2N6253
2N6254
2N6257
2N6258
2N6259
2N6260
2N6261
2N6262
2N6263

1-241
1-241
1-241
1-241
1-241
1-241
1-297
1-282
1-47
1-47

2N6264
2N6270
2N6271
2N6272
2N6273
2N6274
2N6274JAN
2N6274JTX
2N6274JTXV
2N6275

1-47
1-47
1-47
1-47
1-933
1-933
1-333
1-929
1-929
1-946

2N6276
2N6277
2N6277JAN
2N6277JTX
2N6277JTXV
2N6278
2N6279
2N6280
2N6281
2N6282

2N6276
2N6277
2N6277JAN
2N6277JTX
2N6277JTXV

2N6282

1-261
1-261
1-50
1-50
1-50
1-261
1-261
1-261
1-261
1-265

2N6487
2N6488
2N6488
2N6486
2N6107
2N6107
2N6109
2N6109
2N6111
2N6111
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126
2N6436
2N6338
2N6129
2N6130
2N6131
2N6132
2N6133
2N6134
MPSU10
MPSU10
2N6559
MPSU06
MPSU05
MPSU56

2N6251
2N5877
2N5878
2N6257
2N5686
2N5631
2N4231A
2N4233A
2N5760
2N5050
2N5051
2N6338
2N6338
2N6338
2N6338
2N6274
2N6274JAN
2N6274JTX
2N6274JTXV
2N6275

2N6274
2N6275
2N6276
2N6277

Page #
1-257
1-196
1-196
1-104
1-185
1-174
1-120
1-120
1-189
1-144
1-144
1-282
1-282
1-282
1-282
1-261
1-50
1-50
1-50
1-261

2N6181
2N6186
2N6187
2N6188
2N6189
2N6190
2N6191
2N6192
2N6193
2N6211

2N6186
2N6187
2N6188
2N6189
2N6190
2N6191
2N6192
2N6193
2N6211

1-946
1-245
1-245
1-245
1-245
1-248
1-248
1-248
1-248
1-251

2N6283
2N6283JAN
2N6283JTX
2N6283JTXV
2N6284
2N6284JAN
2N6284JTX
2N6284JTXV
2N6285
2N6286

2N6283
2N6283JAN
2N6283JTX
2N6283JTXV
2N6284
2N6284JAN
2N6284JTX
2N6284JTXV
2N6285
2N6286

1-265
1-50
1-50
1-50
1-265
1-50
1-50
1-50
1-265
1-265

2N6212
2N6213
2N6226
2N6227
2N6228
2N6229
2N6230
2N6231
2N6233
2N6234

2N6212
2N6213
2N6226
2N6227
2N6228
2N6229
2N6230
2N6231
2N6233
2N6234

1-251
1-251
1-189
1-189
1-189
1-178
1-178
1-178
1-254
1-254

2N6286JAN
2N6286JTX
2N6286JTXV
2N6287
2N6287JAN
2N6287JTX
2N6287JTXV
2N6288
2N6289
2N6290

2N6286JAN
2N6286JTX
2N6286JTXV
2N6287
2N6287JAN
2N6287JTX
2N6287JTXV
2N6288·

1-50
1-50
1-50
1-265
1-50
1-50
1-50
1-238
1-238
1-238

2N6235
2N6242
2N6243
2N6244
2N6245
2N6246
2N6247
2N6248
2N6249
2N6250

2N6235

1-254
1-671
1-707
1-707
1-707
1-199
1-199
1-65
1-257
1-257

2N6291
2N6292
2N6293
2N6294
2N6295
2N6296
2N6297
2N6298
2N6298JAN
2N6298JTX

MPSU55

MJ13015
MJ13334
MJ13333
MJ13334
2N5879
2N5880
MJ15016
2N6249
2N6250

'Consult factory if a direct replacement is necessary.
*'To be introduced. Contact factory for Data Sheet

1-6

2N6288
2N6290
2N6290
2N6292
2N6292
2N6294
2N6295
2N6296
2N6297
2N6298
2N6298JAN
2N6298JTX

1-238
1-238
1-238
1-270
1-270
1-270
1-270
1-232
1-49
1-49

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

2N6298JTXV
2N6299
2N6299JAN
2N6299JTX
2N6299JTXV
2N6300
2N6300JAN
2N6300JTX
2N6300JTXV
2N6301

2N6298JTXV
2N6299
2N6299JAN
2N6299JTX
2N6299JTXV
2N6300
2N6300JAN
2N6300JTX
2N6300JTXV
2N6301

1-49
1-232
1-49
1-49
1-49
1-232
1-49
1-49
1-49
1-232

2N6378
2N6378JAN
2N6378JTX
2N6378JTXV
2N6379
2N6379JAN
2N6379JTX
2N6379JTXV
2N6380
2N6381

2N6301JAN
2N6301JTX
2N6301JTXV
2N6302
2N6303
2N6306
2N6306JAN
2N6306JTX
2N6307
2N6308

2N6301JAN
2N6301JTX
2N6301JTXV

1-49
1-49
1-49
1-174
1-88
1-274
1-49
1-49
1-274
1-274

2N6382
2N6383
2N6383JAN
2N6383JTX
2N6383JTXV
2N6384
2N6384JAN
2N6384JTX
2N6384JTXV
2N6385

1-49
1-49
1-120
1-120
1-120
1-278
1-278
1-278
1-278
1-537

2N6385JAN
2N6385JTX
2N6385JTXV
2N6386
2N6387
2N6388
2N6406
2N6407
2N6408
2N6409

1-537
1-537
1-537
1-31
1-31
1-31
1-31
1-31
1-31
1-282

2N6410
2N6411
2N6412
2N6413
2N6414
2N6415
2N6416
2N6417
2N6418
2N6419

1-50
1-50
1-50
1-282
1-282
1-282
1-50
1-50
1-50
1-282

2N6420
2N6421
2N6422
2N6423
2N6424
2N6425
2N6436
2N6437
2N6437JAN
2N6437JTX

2N6420
2N6421
2N6422
2N6423
2N6424
2N6425
2N6436
2N6437
2N6437JAN
2N6437JTX

1-76
1-76
1-76
1-76
1-93
1-93
1-297
1-297
1-50
1-50

1-228
1-228
1-228
1-228
1-203
1-336
1-278
1-278
1-278
1-285

2N6437JTXV
2N6438
2N6438JAN
2N6438JTX
2N6438JTXV
2N6465
2N6466
2N6467
2N6468
2N6469

2N6437JTXV
2N6438
2N6438JAN
2N6438JTX
2N6438JTXV

1-50
1-297
1-50
1-50
1-50
1-457
1-457
1-457
1-457
1-199

2N6308JAN
2N6308JTX
2N6312
2N6313
2N6314
2N6315
2N6316
2N6317
2N6318
2N6322
2N6323
2N6324
2N6325
2N6326
2N6327
2N6328
2N6329
2N6330
2N6331
2N6338
2N6338JAN
2N6338JTX
2N6338JTXV
2N6339
2N6340
2N6341
2N6341JAN
2N6341JTX
2N6341JTXV
2N6354
2N6355
2N6356
2N6357
2N6358
2N6359
2N6371
2N6372
2N6373
2N6374
2N6377

2N5630
2N6303
2N6306
2N6306JAN
2N6306JTX
2N6307
2N6308
2N6308JAN
2N6308JTX
2N6312
2N6313
2N6314
2N6315
2N6316
2N6317
2N6318
MJ10015
MJ10015
MJ10015
MJ10015
2N6326
2N6327
2N6328
2N6329
2N6330
2N6331
2N6338
2N6338JAN
2N6338JTX
2N6338JTXV
2N6339
2N6340
2N6341
2N6341JAN
2N6341JTX
2N6341JTXV
2N6339
2N6057
2N6057
2N6058
2N6058
2N5885
2N6569
2N6316
2N6315
2N6315
2N6377

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data Sheet.

1-7

2N6378
2N6378JAN
2N6378JTX
2N6378JTXV
2N6379
2N6379JAN
2N6379JTX
2N6379JTXV
2N6377
2N6378
2N6379
2N6383
2N6383JAN
2N6383JTX
2N6383JTXV
2N6384
2N6384JAN
2N6384JTX
2N6384JTXV
2N6385
2N6385JAN
2N6385JTX
2N6385JTXV
2N6386
2N6387
2N6388

1-285
1-50
1-50
1-50
1-285
1-50
1-50
1-50
1-285
1-285
1-285
1-289
1-49
1-49
1-49
1-289
1-49
1-49
1-49
1-289

MJE171
MJE172
MJE181'
MJE182'

1-49
1-49
1-49
1-293
1-293
1-293
1-797
1-797
1-797
1-797

MJE200'
MJE210
MJE180
MJE181
MJE170
MJE171
MJE243
MJE243
MJE253
MJE253

1-801
1-801
1-797
1-797
1-797
1-797
1-807
1-807
1-807
1-807

MJ3247
MJ3247
MJ3237
MJ3237
2N5879

III

INDEX CROSS-REFERENCE (Continued)

III

Industry
Part Number
2N6470
2N6471
2N6472
2N6473
2N6474
2N6475
2N6476
2N6477
2N6478
2N6486

Motorola
Direct
Replacement

Motorola
Similar
Replacement

1-199
1-199
1-199
1-46
1-46
1-46
1-46
1-46
1-46
1-301

2N6576
2N6577
2N6578
2N6579
2N6580
2N6581
2N6582
2N6583
2N6584 .
2N6591

2N6591

2N6055
2N6056
2N6056
2N6316
2N6339

1-301
1-301
1-301
1-301
1-301
1-232
1-232
1-232
1-278
1-282

2N6592
2N6593
2N6594
2N6609
2N6648
2N6648JAN
2N6648JTX
2N6648JTXV
2N6649
2N6649JAN

2N6592
2N6593
2N6594
2N6609
2N6648
2N6648JAN
2N6648JTX
2N6648JTXV
2N6649
2N6649JAN

1-343
1-343
1-347
1-108
1-289
1-49
1-49
1-49
1-289
1-49

2N5430
2N6306
2N6306
2N6544
2N6545
2N6544
TIP101

1-305
1-305
1-305
1-170
1-274
1-274
1-315
1-315
1-315
1-975

2N6649JTX
2N6649JTXV
2N6650
2N6650JAN
2N6650JTX
2N6650JTXV
2N6653
2N6654
2N6655
2N6666

2N6649JTX
2N6649JTXV
2N6650
2N6650JAN
2N6650JTX
2N6650JTXV

1-49
1-49
1-289
1-49
1-49
1-49
. 1-707
1-707
1-707
1-351

2N6667
2N6668
2N6669
2N6671
2N6672
2N6673
2N6674
2N6675
2N6676
2N6677

2N6667
2N6668

2N6678
2N6833
2N6834
2N6835
2N6836
2N6837

2N6486
2N6487 .
2N6488
2N6489
2N6490
2N6491

2N6497
2N6498
2N6499
2N6500·
2N6510
2N6511
2N6512
2N6513
2N6514
2N653O

2N6497
2N6498
2N6499

2N6531
2N6532
2N6534
2N6535

TIP102
TIP102
2N6301
TIP102
TIP102

2N6542
2N6543
2N6544
2N6545
2N6546

2N6542
2N6543
2N6544
2N6545
2N6546

1-975
1-975
1-232
1-975
1-975
1-309
1-309
1-315
1-315
1-319

2N6546JAN
2N6546JTX
2N6547
2N6547JAN
2N6547JTX
2N6548
2N6549
2N6551
2N6552
2N6553

2N6546JAN
2N6546JTX
2N6547
2N6547JAN
2N6547JTX
2N6548
2N6549
2N6551
2N6552
2N6553

1-50
1-50
1-319
1-50
1-50
1-323
1-323
1-326
1-326
1-326

2N6678
2N6833
2N6834
2N6835
2N6836
2N6837
2SA483
2SA489
2SA490
2SA496

2N6554
2N6555
2N6556
2N6557
2N6558
2N6559
2N6569
2N6573
2N6574
2N6S75

2N6554
2N6555
2N6556
2N6557
2N6558
2N6559
2N6569

1-330
1-330
1-330
1-333
1-333
1-333
1-336
1-319
1-319
1-319

2SA505
2SA566
2SA613
2SA614
2SA616
2SA623
2SA624
2SA626
2SA627·
2SA633

2~6536

Motorola
Similar
Replacement

Page #

2N5881
2N5881
2N5882
FT317
FT317A
FT417
FT417A
FT317A
FT317B

2N6487
2N6488
2N6489
2N6490
2N6491
2N6492
2N6493
2N6494
2N6495
2N6496

Motorola
Direct
Replacement

Industry
Part Number

2N6546
2N6546
2N6547

·Consult factory If a direct replacement IS necessary.
•0To be introduced. Contact factory for Data Sheet.

1-8

2N6576
2N6577
2N6578
MJ13080
MJ13080
MJ16004
MJ13080
MJ13080
MJ16008

MJ13332
MJ13332
MJ13333
2N6666

MJE15028
2N6544
MJ13080
MJ13080
MJ13090
MJ13090
2N6676
2N6677

Page #
1-340
1-340
1-340
·1-683
1-683
1-735
1-683
1-683
1-750
1-343

1-351
1-351
1-909
1-315
1-683
1-683
1-689
1-689
1-355
1-355

2N6420
2N6126
2N6125
2N4918

1-355
1-359
1-359
1-367
1-374
1-381
1-76
1-241
1-241
1-134

2N4919
2N6420
2N4899
2N4900
2N3741
D41E1
D41E5
2N6226
2N6226
D41E1

1-134
1-76
1-128
1-128
1-97
1-411
1-411
1-189
1-189
1-411

INDEX CROSS-REFERENCE (Continued)
Industry
Part Numbar

Motorola
Dlract
Raplacemant

Motorola
Similar
Replacamant

Paga 1/

Industry
Part Numbar

Motorola
Direct
Raplacament

Motorola
Similar
Raplacamant

Page 1/

2SA634
2SA635
2SA636
2SA645
2SA646
2SA647
2SA648
2SA652
2SA653
2SA656

041E5
04107
2N6556
041010
2N6556
2N6556
2N6230
2N6420
2N6420
2N6228

1-411
1-407
1-330
1-407
1-330
1-330
1-178
1-76
1-76
1-189

2SA897
2SA898
2SA899
2SA900
2SA907
2SA908
2SA909
2SA922
2SA939
2SA940

MPSU55
MJE350
MJE350
MJE210
MJ15016
MJ15002
MJ15023
2N4918
MJE350
MJE15031

1-946
1-815
1-815
1-801
1-65
1-717
1-728
1-134
1-815
1-909

2SA657
2SA658
2SA663
2sA670
2SA671
2SA679
2SA680
2SA681
2SA682
2SA698

2N6226
2N6226
2N6226
2N6125
2N6125
MJ15016
2N5880
MJE253
MJE253
MOS60

1-189
1-189
1-189
1-241
1-241
1-65
1-199
1-807
1-807
1-439

2SA949
2SA957
2SA958
2SA962
2SA963
2SA965
2SA966
2SA968
2SA969
2SA971

MJE15031
MJE15031
MJE15031
MPSU55
MJE171
MJE15029
TIP32
MJE15031
MJ3238
2N6609

1-909
1-909
1-909
1-946
1-797
1-909
1-957
1-909
1-457
1-108

2SA699
2SA700
2SA703
2SA706
2SA714
2SA715
2SA738
2SA739
2SA755
2SA756

041E5
TIP30
041E1
MPSU55
2N6228
MJE170
MJE170
MJ6502
2N6125
2N6226

1-411
1-955
1-411
1-946
1-189
1-797
1-797
1-467
1-241
1-189

2SA980
2SA981
2SA982
2SA1001
2SA1002
2SA1003
2SA1007
2SA1008
2SA1010
2SA1011

2N6229
2N6230
2N6231
2N6438
2N6438
2N6438
2N6231
TIP32C
TIP42C
MJE15031

1-178
1-178
1-178
1-297
1-297
1-297
1-178
1-957
1-967
1-909

2SA757
2SA758
2SA762
2SA764
2SA765
2SA766
2SA768
2SA769
2SA770
2SA771

2N6227
2N6228
2N6211
2N6317
2N6318
2N6420
2N6125
2N6126
2N6109
2N6107

1-189
1-189
1-251
1-278
1-278
1-76
1-241
1-241
1-238
1-238

2SA1012
2SA1020
2SA1040
2SA1041
2SA1042
2SA1043
2SA1044
2SA1045
2SA1046
2SA1063

TIP42A
TIP32
2N6438
2N6438
2N6436
2N6438
2N6436
2N6052
2N6052
2N6228

1-967
1-957
1-297
1-297
1-297
1-297
1-297
1-228
1-228
1-189

2SA775
2SA779
2SA780
2SA794
2SA795
2SA807
2SA808
2SA814
2SA815
2SA816

TIP30C
2N4918
2N4919
MJE253
MJE253
2N3789
2N3790
TIP30C
TIP30C
TIP30B

1-955
1-134
1-134
1-807
1-807
1-112
1-112
1-955
1-955
1-955

2SA1064
2SA1065
2SA1067
2SA1068
2SA1069
2SA1110
2SA1111
2SA1112
2SB502
2SB503

2N6231
2N6231
2N6230
2N6231
TIP42B
MJE350
MJE15031
MJE15031
2N3741
2N3741

1-178
1-178
1-178
1-178
1-967
1-815
1-909
1-909
1-97
1-97

2SA818
2SA835
2SAB37
2SA839
2SA843
2SA861
2SA877
2SA878
2SA882
2SA887

MPSU60
MPSU60
2N6226
TIP32C
MJE15031
MPSU51
2N5876
2N6230
2N6231
041E7

1-950
1-950
1-189
1-957
1-909
1-942
1-196
1-178
1-178
1-411

2SB506
2SB507
2S8509
2S8511
2S8513
2S8514
2SB515
2S8518
2S8519
2SB520

2N6228
2N6125
2N6126
TIP32
2N6126
TIP32A
TIP32A
2N6226
2N6227
2N6228

1-189
1-241
2-241
1-957
1-241
1-957
1-957
1-189
1-189
1-189

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Oata Sheet.

1-9

INDEX CROSS-REFERENCE (Continued)

-

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

256521
256522
256523
256524
256526
258527
256528
256529
258530
258531

TIP42A
TIP42A
2N5193
2N5194
2N4920
2N4920
2N4920
2N5193
2N6230
2N6226

1-967
1-967
1-150
1-150
1-134
1-134
1-134
1-150
1-178
1-189

256648
256649
256653
256654
256655
256656
256668
256669
256673
258674

MJE350
MJE350
2N6227
2N6227
MJ15002
MJ15002
TIP32A
TIP326
2N6042
2N6041

1-815
1-815
1-189
1-189
1-717
1-717
1-957
1-957
1-221
1-221

256532
256536
256537
256539
256541
256546
256547
256548
258549
256552

2N6226
2N6126
2N6126
2N6231
2N6230
MJE15031
MJE15031
2N4920
2N4920
MJ15023

1-189
1-241
1-241
1-178
1-178
1-909
1-909
1-134
1-134
1-728

256675
256676
256677
256679
256681
256689
256690
258691
256692
258693

2N6040
TIP127
TIP125
TIP117
MJ15002
TlP42C
TIP42C
MJE4352
MJE4352
2N6287

1-221
1-982
1-982
1-979
1-717
1-967
1-967
1-839
1-839
1-265

256554
256555
256556
258557
256558
256559
256565
256566
258567
258568

MJ15023
MJ15012
MJ15012
2N6230
2N6229
2N4918
2N6125
2N6126
MJE15031
MJE15031

1-728
1-723
1-723
1-178
1-178
1-134
1-241
1-241
1-909
1-909

256694
256695
256696
258697
256707
256708
258711
258712
256713
258717

MJ11015
MJE4352
2N6231
MJ15002
2N6107
2N6107
2N6041
2N6042
MJE4352
MJE350

1-636
1-839
1-178
1-717
1-238
1-238
1-221
1-221
1-839
1-815

258569
256570
256571
258572
258573
258574
256575
258576
256577
258578

MJE3310
MJE3311
MJE3312
2N5193
2N5194
2N5195
2N5193
2N5194
2N5195
MJE2955

1-835
1-835
1-835
1-150
1-150
1-150
1-150
1-150
1-150
1-833

258718
256719
258720
256722
258723
258724
258727
258743
256744
258750

MJE350
MJE15031
MJE15031
MJ15002
MJ15023
TIP32A
MJE15029
MJE170
MJE172
TIP115

1-815
1-909
1-909
1-717
1-728
1-957
1-909
1-797
1-797
1-979

256579
258580
256581
256582
258583
256584
256585
256586
256587
256588

2N5975
2N5976
2N5976
'MJE6040
MJE6041
MJE6042
2N6053
2N6054
2N6050
2N6051

1-207
1-207
1-207
1-221
1-221
1-221
1-232
1-232
1-228
1-228

256751
258753
258754
258772
25C41
25C42
25C4ZA
25C43
25C44
25C101

MJE703T
TIP42C
2N6109
MJE170
MJ410
MJ410
MJ410
2N4347
2N4347
2N5050

1-823
1-967
1-238
1-797
1-443
1-443
1-443
1-71
1-71
1-144

256589
256595
258596
256600
256604
256628
258630
258631
256632
258633

2N6052
TIP42C
2N6126
MJ15012
2N6126
MJE15031
MJE15031
2N4920
2N4918
TlP42C

1-228
1-967
1-241
1-723
1-241
1-909
1-909
1-134
1-134
1-967

25C161
25C240
25C241
25C242
25C243
25C244
25C245
25C246
25C270
25C407

2N3447
2N4347
2N3447
2N4347
MJ410
2N3447
2N4347
MJ410
MJ411
MJ15011

1-74
1-71
1-74
1-71
1-443
1-74
1-71
1-443
1-443
1-723

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data 5heet.

1-10

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

2SC408
2SC409
2SC410
2SC411
2SC412
2SC431
2SC432
2SC433
2SC434
2SC435

MJ15011
2N6249
2N6249
2N6546
2N6546
2N6341
2N6341
MJ15022
MJ15022
MJ10000

1-723
1-257
1-257
1-319
1-319
1-282
1-282
1-725
1-725
1-495

2SC783
2SC789
2SC790
2SC791
2SC792
2SC793
2SC794
2SC795
2SC806
2SC807

2N3738
2N6123
TIP31A
2N5050
2N5840
2N5758
2N5758
2N3739
MJ431
MJ413

1-93
1-241
1-957
1-144
1-193
1-189
1-189
1-93
1-445
1-445

2SC436
2SC483
2SC487
2SC488
2SC489
2SC490
2SC491
2SC492
2SC493
2SC494

MJ10000
2N3583
2N3583
2N6233
2N3441
2N3766
2N5050
2N4347
2N4347
2N3447

1-495
1-76
1-76
1-254
1-69
1-100
1-144
1-71
1-71
1-71

2SC808
2SC825
2SC833
2SC840
2SC840A
2SC861
2SC862
2SC867
2SC884
2SC885

MJ411
2N3585
2N6235
2N5050
2N5051
MJ3029
MJ3030
2N3739
2N5050
2N6307

1-443
1-76
1-254
1-144
1-144
1-453
1-453
1-93
1-144
1-274

2SC495
2SC496
2SC508
2SC515
2SC518
2SC518A
2SC519
2SC519A
2SC520
2SC520A

2N4923
2N4921
2N6233
2N3739
2N3448
2N3448
2N5759
2N5760
2N3448
2N3448

1-138
1-138
1-254
1-93
1-74
1-74
1-189
1-189
1-74
1-74

2SC886
2SC887
2SC888
2SC889
2SC895
2SC897
2SC898
2SC901
2SC901A
2SC902

2N6306
MJ410
MJ410
MJ410
2N3441
2N5760
2N5760
2N6306
2N6306
2N5634

1-274
1-443
1-443
1-443
1-69
1-189
1-189
1-274
1-274
1-178

2SC521
2SC521A
2SC558
2SC582
2SC586
2SC642
2SC643
2SC646
2SC647
2SC664

2N3447
2N3448
MJ3029
2N3739
MJ410
BU204
BU204
2N3447
2N3448
2N5758

1-74
1-74
1-453
1-93
1-443
1-388
1-388
1-74
1-74
1-189

2SC931
2SC932
2SC935
2SC936
2SC937
2SC939
2SC940
2SC961
2SC962
2SC981

MJE205
2N5977
2N5840
BU204
BU204
MJ15001
2N6249
2N5759
2N5758
2N5430

1-805
1-210
1-193
1-388
1-388
1-717
1-257
1-189
1-189
1-170

2SC665
2SC675
2SC676
2SC677
2SC678
2SC679
2SC680
2SC681
2SC685
2SC687

2N5760
2N6306
2N6306
2N6306
2N6306
2N3585
2N5052
MJ15011
2N3739
MJ410

1-189
1-274
1-274
1-274
1-274
1-76
1-144
1-723
1-93
1-443

2SC999
2SC1004
2SC1004A
2SC1005
2SC1013
2SC1014
2SC1025
2SC1030
2SC1031
2SC1034

BU205
BU204
BU205
BU207
MDS26
MDS27
2N6233
2N5760
2N3585
BU204

1-388
1-388
1-388
1-393
1-437
1-437
1-254
1-189
1-76
1-388

2SC736
2SC758
2SC759
2SC760
2SC768
2SC769
2SC770
2SC771
2SC779
2SC782

2N4347
2N6307
2N6306
2N6306
2N3055
2N5633
MJ15011
MJ15011
2N3739
2N3739

1-71
1-274
1-274
1-274
1-62
1-178
1-723
1-723
1-93
1-93

2SC1046
2SC1050
2SC1051
2SC1055
2SC1059
2SC1060
2SC1061
2SC1078
2SC1079
2SC1080

BU207
MJ411
2N5760
2N5430
2N3739
TIP31A
TIP31A
BU204
MJ15001
MJ15001

1-393
1-443
1-189
1-170
1-93
1-957
1-957
1-388
1-717
1-717

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet.

1 -11

INDEX CROSS-REFERENCE (Continued)

l1li

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

2SC1086
2SC1088
2SC1089
2SC1096
2SC1098
2SC1099
2SC1100
2SC1101
2SC1102
2SC1104

BU207
MJE3439
MJE3439
MOS26
2N6552
BU207
BU207
BU204
2N3739
2N3585

1-393
1-837
1-837
1-437
1-326
1-393
1-393
1-388
1-93
1-76

2SC1295
2SC1304
2SC1309
2SC1316
2SC1322
2SC1325
2SC1343
2SC1348
2SC1358
2SC1367

BU204
2N3739
BU207
MJ13005
2N6250
MJ12005
MJ15011
BU207
BU208
BU204

1-388
1-93
1-393
1-881
1-257
1-657
1-723
1-393
1-393
1-388

2SC1105
2SC1106
2SC1107
2SC1108
2SC1109
2SC1110
2SC1111
2SC1112
2SC1113
2SC1114

2N3739
2N5840
2N6123
2N6123
2N6123
2N6123
2N5634
2N5634
MJ3247
2N6542

1-93
1-193
1-241
1-241
1-241
1-241
1-178
1-178
1-457
1-309

2SC1381
2SC1382
2SC1391
2SC1402
2SC1403
2SC1409
2SC1410
2SC1413
2SC1418
2SC1419

MJE182
MJE182
2N3739
2N5634
2N5634
TIP47
TIP47
BU207
TIP31
TIP31

1-797
1-797
1-93
1-178
1-178
1-971
1-971
1-393
1-957
1-957

2SC1115
2SC1116
2SC1124.
2SC1125
2SC1130
2SC1131
2SC1132
2SC1140
2SC1141
2SC1142

2N5634
MJ15011
MPSU04
MPSU10
2N6543
2N6542
BU207
2N6547
2N6546
MJ13015

1-178
1-723
1-925
1-933
1-309
1-309
1-393
1-319
1-319
1-671

2SC1429
2SC1431
2SC1433
2SC1434
2SC1436
2SC1440
2SC1441
·2SC1444
2SC1445
2SC1447

MPSU01
2N5050
MJ411
2N6546
2N6249
MJ15001
2N6249
2N5428
2N5430
TIP47

1-921
1-144
1-443
1-319
1-257
1-717
1-257
1-170
1-170
1-971

2SC1143
2SC1151
2SC1152
2SC1153
2SC1154
2SC1155
2SC1156
2SC1157
2SC1160
2SC1161

MJ13014
BU204
2N5840
BU204
MJ12003
040013
2N6543
2N6553
2N3738
2N3738

1-671
1-388
1-193
1-388
1-649
1-407
1-309
1-326
1-93
1-93

2SC1448
2SC1449
2SC1450
2SC1454
2SC1456
2SC1463
2SC1466
2SC1467
2SC1468
2SC1469

TIP47
MJE180
2N3583
MJ411
2N3739
2N6543
2N3585
MJ13005
MJ13091
MJ13091

1-971
1-797
1-76
1-443
1-93
1-309
1-76
1-881
1-689
1-689

2SC1162
2SC1167
2SC1168
2SC1170
2SC1170A
2SC1171
2SC1172
2SC1173
2SC1174
2SC1184

MJE180
BU204
2N3739
BU207
BU208
BU204
BU208
TIP31
MJ12003
BU204

1-797
1-388
1-93
1-393
1-393
1-388
1-393
1-957
1-649
1-388

2SC1477
2SC1501
2SC1504
2SC1505
2SC1506
2SC1507
2SC1514
2SC1516
2SC1517
2SC1519

MJ10006
MJE3439
MJ13005
TIP48
TIP48
TIP48
MJE3439
MJE3300
2N4922
2N6557

1-513
1-837
1-881
1-971
1-971
1-971
1-837
1-835
1-138
1-333

2SC1185
2SC1195
2SC1224
2SC1226
2SC1227
2SC1228
2SC1229
2SC1237
2SC1243
2SC1292

2N5840
2N5838
2N6591
2N6548
MJ10006
MJ13091
MJ10006
TIP31B
D40K3
2N5840

1-193
1-193
1-343
1-323
1-513
1-689
1-513
1-957
1-415
1-193

2SC1520
2SC1521
2SC1576
2SC1577
2SC1578
2SC1579
2SC1580
2SC1584
2SC1585
2SC1586

2N6557
2N6557
MJ13091
MJ13091
MJ10014
MJ10013
MJ10014
2N6249
2N6249
2N6250

1-333
1-333
1-689
1-689
1-531
1-531
1-531
1-257
1-257
1-257

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet

1 -12

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

2SC1609
2SC1610
2SC1617
2SC1618
2SC1619
2SC1628
2SC1629
2SC1630
2SC1664
2SC1667

2N6340
2N6341
MJ411
2N5758
2N5758
MPSU04
MJ100l
MPSU04
2N6300
2N5758

1-282
1-282
1-443
1-189
1-189
1-925
1-449
1-925
1-232
1-189

2SC1942
2SC1983
2SC1984
2SC1985
2SC1986
2SC2024
2SC2027
2SC2068
2SC2071
2SC2073

MJ12003
TIP111
TIPl12
TIP41B
TIP41C
2N4923
MJ12005
D40N4
MJE3440
TIP47

1-649
1-979
1-979
1-967
1-967
1-138
1-657
1-419
1-837
1-971

2SC1669
2SC1672
2SC1683
2SCl722
2SCl723
2SC1728
2SC1749
2SC1755
2SC1756
2SC1757

TIP47
2N6341
TIP47
TIP48
TIP48
MPSU07
MJE340
MJE2360T
MJE2360T
MJE2360T

1-971
1-282
1-971
1-971
1-971
1-931
1-811
1-829
1-829
1-829

2SC2080
2SC2085
2SC2121
2SC2122
2SC2123
2SC2126
2SC2127
2SC2128
2SC2138
2SC2139

MJE180
MJE2361T
MJ411
MJ431
MJ10014
MJE13004
2N6249
MJ10015
MJ13091
MJ13091

1-797
1-829
1-443
1-445
1-531
1-881
1-257
1-537
1-689
1-689

2SC1760
2SC1761
2SC1768
2SC1777
2SC1782
2SC1783
2SC1784
2SC1785
2SC1786
2SC1818

MPSU07
MPSU01
MJ3041
2N5882
MJ15001
2N6249
MJ15001
2N6249
2N6250
2N6340

1-931
1-921
1-455
1-199
1-717
1-257
1-717
1-257
1-257
1-282

2SC2140
2SC2147
2SC2148
2SC2151
2SC2159
2SC2167
2SC2168
2SC2189
2SC2190
2SC2191

MJ13091
MJ10015
MJ13091
MJ10014
MJ10015
MJE15030
MJE15030
MJ15001
2N6545
2N6547

1-689
1-537
1-689
1-531
1-537
1-909
1-909
1-717
1-315
1-319

2SC1819
2SC1826
2SC1827
2SC1829
2SC1830
2SC1831
2SC1832
2SC1846
2SC1847
2SC1848

MJE2361T
TIP41B
TIP41C
MJ3041
2N6578
2N6056
MJ10009
MJE180
MJE181
D40E7

1-829
1-967
1-967
1-455
1-340
1-232
1-519
1-797
1-797
1-411

2SC2198
2SC2199
2SC2204
2SC2209
2SC2220
2SC2229
2SC2230
2SC2233
2SC2235
2SC2236

2N6301
MJ11018
MJ10016
MJE181
MJ10016
TIP47
TIP47
2N6497
TIP47
TIP31

1-232
1-638
1-537
1-797
1-537
1-971
1-971
1-305
1-971
1-957

2SC1866
2SC1868
2SC1869
2SC1870
2SC1875
2SC1880
2SC1881
2SC1883
2SC1884
2SC1891

2N5760
MJ13090
2N5634
2N6546
MJ12003
TIP112
TIP110
TIP122
2N6301
BU204

1-189
1-689
1-178
1-319
1-649
1-979
1-979
1-982
1-232
1-388

2SC2238
2SC2239
2SC2242
2SC2243
2SC2244
2SC2245
2SC2246
2SC2247
2SC2248
2SC2249

TIP47
2N5052
MJE2361T
2N6543
2N6545
MJ13091
2N6547
2N6543
2N6545
MJ10015

1-971
1-144
1-829
1-309
1-315
1-689
1-319
1-309
1-315
1-537

2SC1892
2SC1893
2SC1894
2SC1895
2SC1896
2SC1903
2SC1904
2SC1905
2SC1922
2SC1929

BU205
MJ12003
BU208
MJ12005
MJ12005
MJE341
MJE341
MJE2361T
MJ12003
TIP48

1-388
1-649
1-393
1-657
1-657
1-813
1-813
1-829
1-649
1-971

2SC2250
2SC2256
2SC2260
2SC2261
2SC2262
2SC2270
2SC2278
2SC2292
2SC2293
2SC2298

MJ10016
2N6249
2N6249
2N6249
2N6249
2N5194
MJE3439
MJ13091
MJ13091
MJE270

1-537
1-257
1-257
1-257
1-257
1-150
1-837
1-689
1-689
1-42

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet.

1 -13

INDEX CROSS-REFERENCE (Continued)

III

Industry
Part Number

Motornla
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

2SC2311
2SC2321
2SC2322
2SC2323
2SC2324
2SC2331
2SC2333
2SC2334
2SC2335
2SC2337

2N4922
2N5634
MJ15015
MJ15001
2N6038
MJE13004
MJE13005
MJE15030
MJE13007
2N5634

1-138
1-178
1-65
1-717
1-217
1-881
1-881
1-909
1-887
1-178

2S018
2S024
2S026
2S026A
2S0268
2S026C
2S028
2S029
2S0041
2S045

MJ15011
2N3739
2N5758
2N5758
2N5758
2N5760
2N3767
2N3767
2N3716
2N5760

1-723
1-93
1-189
1-189
1-189
1-189
1-100
1-100
1-82
1-189

2SC2344
2SC2354
2SC2356
2SC2357
2SC2358
2SC2359
2SC2366
2SC2371
2SC2373
2SC2388

TIP47
2N3739
MJ13091
MJ12010
MJ12010
MJ13005
MJ10016
MJE3439
MJE13006
2N6543

1-971
1-93
1-689
1-659
1-659
1-881
1-537
1-837
1-887
1-309

2S046
2S047
2S049
2S050
2S051
2S052
2S053
2S055
2S056
2S057

2N5760
2N5758
2N5050
2N5758
2N5758
2N5758
2N5759
2N6328
2N3738
2N3766

1-189
1-189
1-144
1-189
1-189
1-189
1-189
1-38
1-93
1-100

2SC2397
2SC2402
2SC2403
2SC2428
2SC2429
2SC2430
2SC2431
2SC2432
2SC2433
2SC2434

MJE3055T
2N6546
MJ10015
2N6249
MJ16010
2N5633
MJ15015
2N5882
MJ11016
2N6327

1-833
1-319
1-537
1-257
1-765
1-178
1-65
1-199
1-636
1-38

2S058
2S060
2S067
2S068
2S069
2S070
2S071
2S073
2S074
2S080

2N3766
2N5760 .
2N5759
2N5758
2N5760
2N3766
2N5050
2N5758
2N5760
2N5758

1-100
1-189
1-189
1-189
1-189
1-100
1-144
1-189
1-189
1-189

2SC2435
2SC2436
2SC2442
2SC2443
2SC2448
25C2449
2SC2450
2SC2451
2SC2452
25C2453

2N6059
2N6059
MJ10016
MJ10016
MJ13091
MJ13091
MJ13091
MJ13091
MJ13091
MJ13091

1-228
1-228
1-537
1-537
1-689
1-689
1-689
1-689
1-689
1-689

2S081
2S082
2S083
2S084
2S088
25090
25091
2S092
25093
25094

2N5758
2N5758
2N5760
MJ15011
2N5758
2N3766
2N3766
2N3583
2N5051
2N5052

1-189
1-189
1-189
1-723
1-189
1-100
1-100
1-76
1-144
1-144

2SC2482
25C2487
25C2488
2SC2489
2SC2492
2SC2493
2SC2500
25C2516
2SC2534
25C2535

MJE2361T
2N5634
2N5634
2N5634
2N5633
2N5634
TIP31
2N6497
MJE13003
MJE13005

1-829
1-178
1-178
1-178
1-178
1-178
1-957
1-305
1-875
1-881

2S0102
250103
250107
250108
250110
2S0111
2S0113
2S0114
2S0116
250117

2N3583
2N5050
2N6056
2N6056
2N5634
2N5632
MJ802
2N5686
2N5758
2N5760

1-76
1-144
1-232
1-232
1-178
1-178
1-447
1-185
1-189
1-189

2SC2536
25C2541
(T0218)
25C2562
25C2569
25C2590
2S012
25015
25016
2S017

2N6499

1-305

MJ13091
TIP42A
2N5760
MJE341
2N5758
2N5758
2N5758
2N5760

1-689
1-967
1-189
1-813
1-189
1-189
1-189
1-189

250118
2S0119
250124
2S0124A
250125
2S0125A
2S0126
250129
2S0130
250131

2N5760
2N5758
2N5758
2N5758
2N5758
2N5758
2N5760
2N3767
2N3766
2N5758

1-189
1-189
1-189
1-189
1-189
1-189
1-189
1-100
1-100
1-189

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Oata Sheet.

1 -14

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Dlract
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Pagl #

250132
250138
250139
250141
250142
250143
250144
250146
250147
250148

2N6338
2N3738
2N3739
2N3766
2N3766
2N3767
2N3767
2N4912
2N4912
2N4912

1-282
1-93
1-93
1-100
1-100
1-100
1-100
1-131
1-131
1-131

250241
250242
250243
250244
250246
250247
250249
250250
250251
250254

2N3766
2N3767
MJ3247
MJ3248
BU208
2N5758
2N5302
2N6328
2N5052
2N3767

1-100
1-100
1-457
1-457
1-393
1-189
1-154
1-38
1-144
1-100

250150
250151
250152
250154
250155
250156
250157
250158
250159
250161

2N3583
2N5632
2N3583
2N3767
2N3767
2N3738
2N3739
2N3738
2N3739
2N5633

1-76
1-178
1-76
1-100
1-100
1-93
1-93
1-93
1-93
1-178

250255
250256
250257
250258
250259
250260
250262
250265
250266
250271

2N3767
2N3766
2N3767
MJ3247
MJ3248
2N5758
2N6546
2N6545
2N6545
MJE13005

1-100
1-100
1-100
1-457
1-457
1-189
1-319
1-315
1-315
1-881

250163
250164
250165
250166
250168
250171
250172
250173
250174
250175

2N3715
2N5632
2N5634
MJ15011
2N6385
2N6543
2N5877
2N5632
2N5877
2N5632

1-82
1-178
1-178
1-723
1-289
1-309
1-196
1-178
1-196
1-178

250272
250273
250274
250283
250284
250285
250286
250287
250288
250289

MJE13005
2N6545
2N6545
MJ3247
MJ3247
MJ3247
MJ15011
MJ15011
TIP31B
TlP31B

H81
1-315
1-315
1-457
1-457
1-457
1-723
1-723
1-957
1-957

250176
250177
250180
250181
250188
250189
250189A
250198
250199
250200

2N5632
2N5634
2N5758
MJ15001
2N5758
2N5758
2N5758
2N5840
BU204
BU204

1-178
1-178
1-189
1-717
1-189
1-189
1-189
1-193
1-388
1-388

250290
250291
250292
250293
250294
250295
250296
250297
250299
250300

2N5428
2N37ti7
2N3767
2N6547
2N6547
MJ13335
MJ13335
MJ3248
MJ12004
MJ12004

1-170
1-100
1-100
1-319
1-319
1-707
1-707
1-457
1-651
1-651

250201
250202
250203
250206
250207
250208
250211
250212
250213
250214

2N5758
2N5759
2N5760
2N5877
2N5632
2N5634
2N5877
2N5632
2N5633
2N5634

1-189
1-189
1-189
1-196
1-178
1-178
1-196
1-178
1-178
1-178

250301
250310
250311
250312
250313
250314
250315
250316
250317
250318

2N6385
2N6547
2N6547
2N6543
TIP31A
TIP31A
2N3766
2N3716
TIP31A
TIP31A

1-289
1-319
1-319
1-309
1-957
1-957
1-100
1-82
1-957
1-957

250217
250218
250226
250231
250232
250234
250235
250236
250237
250238

2N5633
2N5634
2N3766
2N5302
2N6275
TIP31A
TIP31A
2N4912
2N4912
2N3583

1-178
1-178
1-100
1-154
1-261
1-957
1-957
1-131
1-131
1-76

250319
250320
250321
250322
250323
250324
250325
250326
250330
250331

2N5633
2N5840
2N6306
MJ4247
MJ4248
2N3739
TIP31
2N3739
TIP31A
TIP31A

1-176
1-193
1-274
1-457
1-457
1-93
1-957
1-93
1-957
1-957

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data 5heet.

1-15

\

-

..

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

25D334
25D335
25D338
25D339
25D340
25D341
25D342
25D343
25D344
25D345

2N5759
2N5758
2N5758
2N5758
MJ15015
MJ15015
TIP31B
TIP31B
TIP31B
TIP31B

1-189
1-189
1-189
1-189
1-65
1-65
1-957
1-957
1-957
1-957

25D423
25D424
25D425
25D426
25D427
25D428
25D429
25D430
25D431
25D432

MJE13004
MJ15001
2N5634
2N5633
2N5759
2N5758
2N6547
2N5759
2N5633
2N5634

1-881
1-717
1-178
1-178
1-189
1-189
1-319
1-189
1-178
1-178

25D346
25D347
25D348
25D350
25D351
25D353
25D356
25D357
25D358
25D359

TIP41A
TIP41A
MJ12005
MJ12004
2N6545
2N5838
2N4923
2N4923
2N4923
2N5190

1-967
1-967
1-657
1-651
1-315
1-193
1-138
1-138
1-138
1-146

250433
250434
25D435
25D436
25D437
250457
250458
25D459
250460
250461

MJ15011
MJ13330
MJ13332
MJ13333
MJ13091
MJ10015
MJ13091
TIP121
TIP122
MJ411

1-723
1-701
1-707
1-707
1-689
1-537
1-689
1-982
1-982
1-443

25D360
25D361
25D363
25D364
25D365
250366
25D368
25D369
25D371
250372

2N5190
2N5191
MJ10015
MJ10016
TIP31A
TIP31A
MJ12005
2N3716
2N5758
MJ10015

1-146
1-146
1-537
1-537
1-957
1-957
1-657
1-82
1-189
1-537

25D463
250464
25D475
250476
25D478
25D479
250480
25D481
250482
25D483

2N6056
2N6056
2N6122
2N6123
TIP47
2N6037
2N6038
2N6039
2N5655
2N5656

1-232
1-232
1-241
1-241
1-971
1-217
1-217
1-217
1-182
1-182

25D373
25D374
250375
25D376
25D377
25D379
25D380
25D381
25D382
25D383

MJ10015
MJ10016
MJ13330
MJ13331
MJ13334
2N5758
MJ12005
MJE15030
MJE15030
MJ411

1-537
1-537
1-701
1-701
1-707
1-189
1-657
1-909
1-909
1-443

25D484
25D485
250486
25D487
250488
250489
25D490
25D491
250492
250493

2N5657
2N5190
2N5191
2N5192
2N4921
2N4922
2N4923
MJE3055
2N3055
2N5977

1-182
1-146
1-146
1-146
1-138
1-138
1-138
1-833
1-62
1-210

25D384
250385
25D386
25D387
25D388
25D389
25D390
25D393
250394
25D395

2N6301
2N6301
MJE13004
MJE13004
MJ4247
TIP31A
TIP31A
MJ13091
MJ13091
MJ13091

1-232
1-232
1-881
1-881
1-457
1-957
1-957
1-689
1-689
1-689

25D494
25D495
250496
250497
25D498
25D499
250500
250501
25D502
250503

2N5978
2N5979
MJE6043
MJE6044
MJE6045
MJE3055
MJE3055
2N5991
2N6055
2N6056

1-210
1-210
1-221
1-221
1-221
1-833
1-833
2-213
1-232
1-232

250396
250401
25D402
250404
250414
250415
25D416
25D417
25D418
25D422

2N6547
TIP47
TIP47
TIP120
MJE341
MJE341
MJ12005
2N6306
MJ12005
MJE13004

1-319
1-971
1-971
1-982
1-813
1-813
1.-657
1-274
1-657
1-881

250504
250505
250506
250517
250518
250519
250522
250523
250524
250525

2N6057
2N6058
2N6059
MJ12003
MJE13004
MJ13015
2N5632
2N6055
2N6056
TIP41C

1-228
1-228
1-228
1-649
1-881
1-671
1-178
1-232
1-232
1-967

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data 5heet.

1-16

INDEX CROSS-REFERENCE (Continued)
Induslry
Pari Numbar

Molorola
Dlract
Raplacamenl

Molorola
Similar
Raplacemanl

Paga 1/

Induslry
Part Numbar

Molorola
Dlract
Raplacamanl

Motorola
Similar
Raplacamanl

Page 1/

250526
250531
250533
250538
250539
250544
250552
250553
250554
250555

TIP41B
TIP41C
MJ423
MJ13091
MJ13015
TIP41C
2N6250
TIP41B
2N3584
MJ13015

1-967
1-967
1-445
1-689
1-671
1-967
1-257
1-967
1-76
1-671

250687
250689
250690
250691
250692
250693
250694
250695
250696
250702

MJE800T
TIP112
2N5428
2N6301
2N6056
MJ10012
MJ10015
MJ10015
MJ10015
MJ10015

1-823
1-979
1-170
1-232
1-232
1-527
1-537
1-537
1-537
1-537

250558
250570
250572
250573
250574
250577
250589
250597
250598
250600

MP5U07
2N6123
MJ10013
MJ10014
MJ11016
MJ12004
MJ12005
2N5758
2N5759
2N4923

1-931
1-241
1-531
1-531
1-636
1-651
1-657
1-189
1-189
1-138

250703
250705
250706
250707
250708
250709
250710
250716
250717
250718

MJ10016
MJ10012
MJ10013
MJ10013
MJ10013
MJ3041
MJ 10004
TIP41C
044H10
MJE15028

1-537
1-527
1-531
1-531
1-531
1-455
1-507
1-967
1-430
1-909

250604
250605
250606
250608
250610
250612
250613
250622
250626
250627

MJ3041
MJ3042
MJ10014
TIP47
TIP47
MJE520
TIP41C
MJE13005
MJ10012
MJ12004

1-455
1-455
1-531
1-971
1-971
1-821
1-967
1-881
1-527
1-651

250721
250722
250723
250724
250725
250726
250727
250728
250729
250731

2N6045
2N6045
TIP31C
MJE13004
MJ12005
TIP31C
2N4347
2N5760
2N6284
2N6306

1-221
1-221
1-957
1-881
1-657
1-957
1-71
1-189
1-265
1-274

250628
250629
250630
250631
250632
250633
250634
250635
250640
250642

2N6059
2N6059
2N5302
2N5302
2N5840
TIP122
TIP121
TIP120
2N6545
MJ10016

1-228
1-228
1-154
1-154
1-193
1-982
1-982
1-982
1-315
1-537

250732
250733
250748
250749
250751
250752
250753
250757
250758
250759

2N6306
MJ15001
2N5838
2N6543
MJ423
MJ15001
2N6249
MJE3440
MJE3440
TIP47

1-274
1-717
1-193
1-309
1-445
1-717
1-257
1-837
1-837
1-971

250643
250644
250645
250646
250649
250650
250663
250665
250668
250669

MJ10015
MJ10016
MJ10016
MJ10016
MJ12004
MJ3042
MJ3042
2N6249
MJE344
MJE344

1-537
1-537
1-537
1-537
1-651
1-455
1-455
1-257
1-813
1-813

250760
250761
250762
250764
250765
250766
250768
250793
250794
250797

TIP47
TIP47
TIP31A
MJ12002
MJ12003
2N3739
2N6045
MJE180
MJE182
MJE802

1-971
1-971
1-957
1-644
1-649
1-93
1-221
1-797
1-797
1-823

250670
250672
250673
250674
250675
250676
250677
250678
250679
250686

2N6578
2N5840
2N5759
2N5759
2N5760
2N5760
2N6543
TIP110
TlP111
TIP122

1-340
1-193
1-189
1-189
1-189
1-189
1-309
1-979
1-979
1-982

250800
250801
250802
250803
250805
250811
250823
250836
250837
250839

2N5840
2N6545
2N6545
2N6059
MJ10016
MJ12010
MJE15030
TIP110
TIP120
MJE800T

1-193
1-315
1-315
1-228
1-537
1-659
1-909
1-979
1-982
1-823

*Consult factory if a direct replacement is necessary.
**To be inlroduced. Contact factory for Oata 5heet.

1-17

III

INDEX CROSS-REFERENCE (Continued)

l1li

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

250840
250843
250844
250867
250872
250873
250877
250878
250880
250882

MJE802T
MJE15028
2N6290
2N5633
2N6499
2N3773
2N3441
2N3055
TIP31A
MJE180

1-823
1-909
1-238
1-178
1-305
1-108
1-69
1-62
1-957
1-797

40875
40876
40885
40886
40887
40910
40911
40912
40913
41012

TIP41C
TIP41A
MP5U10
MP5U10
2N6559
2N4231A
2N4233A
2N5050
2N5051
2N5038

1-967
1-967
1-933
1-933
1-333
1-120
1-120
1-144
1-144
1-142

250903
250950
250951
250952
250953
40250
40251
40310
40312
40313

MJ12005
MJ12004
MJ12004
MJ12004
MJ12005
2N4231A
2N6569
2N4231A
2N4232A
2N4240

1-657
1-651
1-651
1-651
1-657
1-120
1-336
1-120
1-120
1-76

41013
41500
41501
41504
41505
41506
43104
BU105
BU108
BU126

2N6339
TIP29
TIP30
TIP31
MP5U10
2N6543
2N5631

1-282
1-955
1-955
1-957
1-933
1-309
1-174
1-388
1-393
1-453

40316
40318
40322
40324
40325
40328
40363
40364
40369
40372

2N4231A
2N4240
2N4240
2N4231A
2N6569
2N4240
2N5877
2N4233A
2N5877
2N3054

1-120
1-76
1-76
1-120
1-336
1-76
1-196
1-120
1-196
1-58

BU180
BU180A
BU204
BU205
BU207
BU208
BU208D
BU406
BU407
BU806

40373
40374
40375
40411
40513
40514
40542
40543
40613
40618

2N3441
2N3583
2N5428
MJ802
MJE3055T
MJE3055T
2N5978
2N5978
TIP31
TIP31

1-69
1-76
1-170
1-447
1-833
1-833
1-210
1-210
1-957
1-957

BU807
BUX80
BUX81
BUX82
BUX83
BUX84
BUX85
BUX86
BUX87
040C1

40621
40622
40624
40627
40629
40630
40631
40632
40636
40829

TIP31
TIP31
TIP41A
TIP41A
TIP31
TIP31
TIP31A
TIP41A
2N5878
2N6316

1-957
1-957
1-967
1-967
1-957
1-957
1-957
1-967
1-196
1-278

040C2
040C4
040C5
04001
04002
04003
04004
04005
04007
04008

040C2
040C4
040C5
04001
04002

40830
40831
40850
40852
40853
40854
40871
40872
40873
40874

2N6315
2N6315
2N4240
2N6543
2N6546
2N6546
TIP41C
TIP42C
TIP41B
TIP41B

1-278
1-278
1-76
1-309
1-319
1-319
1-967
1-967
1-967
1-967

040010
040011
040013
040014
040E1
040E5
040E7
040K1
040K2
040K3

*Consult lactory il a direct replacement is necessary.
**To be introduced. Contact factory for Oata 5heet.

1 -18

BU205
BU208
MJ3030
MJE5741
MJE5742
BU204
BU205
BU207
BU208
BU2080
BU406
BU407
BU806
BU807

1-851
1-851
1-388
1-388
1-393
1-393
1-398
1-400
1-400
1-402

2N6547
MJ13335
2N6545
2N6545
MJE13005
MJE13005
MJE13003
MJE13003

1-402
1-319
1-707
1-315
1-315
1-881
1-881
1-875
1-875
1-404

04002
04004
04005
04007
04008

1-404
1-404
1-404
1-407
1-407
1-407
1-407
1-407
1-407
1-407

040010
040011
040013
040014
040E1
040E5
040E7
040K1
040K2
040K3

1-407
1-407
1-407
1-407
1-411
1-411
1-411
1-415
1-415
1-415

040C1

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement
2N6044
2N6386
2N6387
2N6388

Page #
1-221
1-428
1-428
1-428
1-430
1-430
1-430
1-430
1-430
1-430

D40K4
D40N1
D40N2
D40N3
D40N4
D40P1
D40P3
D40P5
D41D1
D41D2

D40K4
D40N1
D40N2
D40N3
D40N4
D40P1
D40P3
D40P5
D41D1
D41D2

1-415
1-419
1-419
1-419
1-419
1-422
1-422
1-422
1-407
1-407

D44D6
D44E1
D44E2
D44E3
D44H1
D44H2
D44H4
D44H5
D44H7
D44H8

D41D4
D41D5
D41D7
D41D8
D41D10
D41D11
D41D13
D41D14
D41E1
D41E5

D41D4
D41D5
D41D7
D41D8
D41D10
D41D11
D41D13
D41D14
D41E1
D41E5

1-407
1-407
1-407
1-407
1-407
1-407
1-407
1-407
1-411
1-411

D44H10
D44H11
D44R1
D44R2
D44R3
D44R4
D44R5
D44R6
D44TD3
D44TD4

D41E7
D41K1
D41K2
D41K3
D41K4
D42C1
D42C2
D42C3
D42C4
D42C5

D41E7
D41K1
D41K2
D41K3
D41K4
MDS26
MDS26
MDS26
MDS27
MDS27

1-411
1-415
1-415
1-415
1-415
1-437
1-437
1-437
1-437
1-437

D44TD5
D44TE3
D44TE4
D44TE5
D44VH1
D44VH4
D44VH7
D44VH10
D45C1
D45C2

D44VH1
D44VH4
D44VH7
D44VH10
D45C1
D45C2

1-903
1-903
1-903
1-903
1-432
1-432
1-432
1-432
1-426
1-426

D42C6
D42C7
D42C8
D42C9
D43C1
D43C2
D43C3
D43C4
D43C5
D43C6

MDS27
MDS27
MDS27
MDS27
MDS76
MDS76
MDS76
MDS77
MDS77
MDS77

1-437
1-437
1-437
1-437
1-437
1-437
1-437
1-437
1-437
1-437

D45C3
D45C4
D45C5
D45C6
D45C7
D45C8
D45C9
D45C10
D45C11
D45C12

D45C3
D45C4
D45C5
D45C6
D45C7
D45C8
D45C9
D45C10
D45C11
D45C12

1-426
1-426
1-426
1-426
1-426
1-426
1-426
1-426
1-426
1-426

D43C7
D43C8
D43C9
D44C1
D44C2
D44C3
D44C4
D44C5
D44C6
D44C7

MDS77
MDS77
MDS77

1-437
1-437
1-437
1-426
1-426
1-426
1-426
1-426
1-426
1-426

D45E1
D45E2
D45E3
D45H1
D45H2
D45H4
D45H5
D45H7
D45H8
D45H9

1-426
1-426
1-426
1-426
1-426
1-293
1-293
1-221
1-221
1-221

D45H10
D45H11
D45H12
D45VH1
D45VH4
D45VH7
D45VH10
D56W1
D56W2
D5&W3

D44C8
D44C9
D44C10
D44C11
D44C12
D44D1
D44D2
D44D3
D44D4
D44D5

D44C1
D44C2
D44C3
D44C4
D44C5
D44C6
D44C7
D44C8
D44C9
D44C10
D44C11
D44C12
2N6386
2N6386
2N6043
2N6043
2N6044

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet

1 -19

D44H1
D44H2
D44H4
D44H5
D44H7
D44H8
D44H10
D44H11
TlP47
TlP47
TlP48
TlP48
TIP47
TIP48
MJE13070
MJE13070
MJE13070
MJE13070
MJE13070
MJE13070

TIP125
TIP125
TIP126
D45H1
D45H2
D45H4
D45H5
D45H7
D45H8
D45H9
D45H10
D45H11
D45H12
D45VH1
D45VH4
D45VH7
D45VH10
BU208
BU208
BU207

1-430
1-430
1-971
1-971
1-971
1-971
1-971
1-971
1-903
1-903

1-428
1-428
1-428
1-430
1-430
1-430
1-430
1-430
1-430
1-47
1-430
1-430
1-430
1-432
1-432
1-432
1-432
1-393
1-393 .
1-393

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement __

Page #

Industry
Part Number

D56W4
D64VE3
D64VE4
D64VE5
D54VP3
D64VP4
D64VP5
D64VS3
D64VS4
D64VS5

BU207
MJ13080
MJ13080
MJ13080
MJ13090
MJ13090
MJ13090
MJ13100
MJ13100
MJ13100

1-393
H83
1-683
1-683
1-689
1-689
1-689
1-695
1-695
1-695

FT49
FT50
FT317
FT317 A
FT317B
FT401
FT402
FT410
FT411
FT413

DTS310
DTS311
DTS401
DTS402
DTS403
DTS409
DTS410
DTS411
DTS413
DTS423

2N6306
2N6306
2N3902
2N3902
2N6308
2N6308
MJ410
MJ411
MJ413
MJ423

1-274
1-274
1-116
1-116
1-174
1-274
1-443
1-443
1-445
1-445

FT417
FT417A
FT417B
FT423
FT430
FT431
FT2955
FT3055
GE5060
GE5061

DTS424
DTS425
DTS430
DTS431
DTS515
DTS516
DTS517
DTS518
DTS519
DTS660

2N6308
2N6545
2N6307
MJ431
2N6306
2N6306
2N6306
2N6307
2N6308
2N6233

1-274
1-315
1-274
1-445
1-274
1-274
1-274
1-274
1-274
1-254

DTS663
DTS665
DTS701
DTS702
DTS712
DTS714
DTS801
DTS802
DTS804
DTS812

2N6235
2N6235
BU204
BU205
BU207
BU208
BU205
BU207
BU208
BU207

DTS814
DTS1010
DTS1020
DTS4010
DTS4025
DTS4026
DTS4039
DTS4040
DTS4041
DTS4045
DTS4059
DTS4060
DTS4061
DTS4065
DTS4066
DTS4067
DTS4074
DTS4075
FT47
FT48

Motorola
Direct
Replacement

Motorola
Similar
Replacement

2N3902
2N3902
MJ410
MJ411
MJ413

1-971
1-971
l.909
1-46
1-46
1-116
1-116
1-443
1-443
1-445

MJ423
2N6307
MJ431
MJE2955T
MJE3055T
MJ10000
MJ10000

1-46
1-46
1-46
1-445
1-274
1-445
1-833
1-833
1-495
1-495

GE5062
GE6060
GE6061
GE6062
GE6251
GE6252
GE6253
IR401
IR402
IR403

MJ10001
MJ10015
MJ10015
MJ10015
MJ10004
MJ10004
MJ10005
2N3902
2N3902
2N6308

1-495
1-537
1-537
1-537
1-507
1-507
1-507
1-116
1-116
1-274

1-254
1-254
1-388
1-388
1-393
1-393
1-388
1-393
1-393
1-393

IR409
IR410
IR411
IR413
IR423
IR424
IR425
IR430
IR431
IR515

2N6308
MJ410
MJ411
MJ413
MJ423
2N6308
2N6545
2N6307
MJ431
2N6250

1-274
1-443
1-443
1-445
1-445
1-274
1-315
1-274
1-445
1-257

BU208
2N6056
MJ3001
MJ3041
MJ3041
MJ1OO12
MJ10000
MJ10000
MJ10000
MJ10000

1-393
1-232
1-451
1-455
1-455
1-527
1-495
1-495
1-495
1-495

IR516
IR517
IR518
IR519
IR640
IR641
IR642
IR645
IR646
IR647

2N6250
2N6251
2N6546
2N6547
MJ3000
MJ3001
2N6578
MJ2500
MJ2501
2N6052

1-257
1-257
1-319
1-319
1-451
1-451
1-340
1-451
1-451
1-228

MJ10000
MJ1OOO1
MJ10000
MJ10001
MJ10000
MJ10000
MJ10OO4
MJ10004
TIP47
TIP48

1-495
1-495
1-495
1-495
1-495
1-495
1-507
1-507
1-971
1-971

IR660
IR663
IR665
IR701
IR801
IR802
IR900
IR901
IR1000
IR1001

MJ410
MJ423
MJ12003
BU204
BU205
MJ802
MJ900
MJ901
MJ1000
MJ1OO1

1-443
1-445
1-649
1-388
1-388
1-447
1-449
1-449
1-449
1-449

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data Sheet.

1-20

FT317
FT317 A
FT317B

TIP49
TIP50
MJE15028

Page #

FT417
FT417A
FT417B

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

IR10l0
IR1020
IR2500
IR2501
IR3000
IR3001
IR3771
IR3772
IR3773
IR4039

2N6056
MJ3001
MJ2500
MJ2501
MJ3000
MJ3001
2N3771
2N3772
2N3773
MJ 10000

1-232
1-451
1-451
1-451
1-451
1-451
1-104
1-104
1-108
1-495

MDS1678
MJ105
MJ205
MJ400
MJ410
MJ411
MJ413
MJ423
MJ424
MJ425

IR4040
IR4041
IR4045
IR4050
IR4055
IR4059
IR4060
IR4061
IR4065
IR4502

MJ10000
MJ 10000
MJ10000
MJ10000
MJ10000
MJ10000
MJ1000l
MJ10000
MJ1000l
MJ4502

1-495
1-495
1-495
1-495
1-495
1-495
1-495
1-495
1-495
1-463

MJ431
MJ450
MJ480
MJ481
MJ490
MJ491
MJ701
MJ702
MJ704
MJ721

IR5000
IR5001
IR5002
IR5060
IR5061
IR5062
IR5252
IR5261
IR6000
IR6001

MJ10000
MJ10000
MJ1000l
MJ10000
MJ10000
MJ1000l
MJ10003
MJ10002
MJ10004
MJ10004

1-495
1-495
1-495
1-495
1-495
1-495
1-501
1-501
1-507
1-507

MJ723
MJ802
MJ804
MJ900
MJ901
MJ920
MJ921
MJ1000
MJ100l
MJ1200

IR6002
IR6060
IR6061
IR6062
IR6251
IR6252
IR6302
KDT410
KDT411
KDT413

MJ10005
MJ10004
MJ10004
MJ10005
MJ10006
MJ10007
2N5630
MJ410
MJ411
MJ413

1-507
1-507
1-507
1-507
1-513
1-513
1-174
1-443
1-443
1-445

MJ1201
MJ2249
MJ2250
MJ2251
MJ2252
MJ2253
MJ2254
MJ2267
MJ2268
MJ2300

KDT423
KDT430
KDT431
KDT515
KDT516
KDT517
KDT518
KDT519
KP3946
KP3948

MJ423
2N6307
MJ431
2N6306
2N6306
2N6306
2N6307
2N6308
2N6274
2N6274

1-445
1-274
1-445
1-274
1-274
1-274
1-274
1-274
1-261
1-261

MJ2305
MJ2500
MJ2501
MJ2801
MJ2802
MJ2840
MJ2841
MJ2901
MJ2940
MJ2955

1-434
1-434
1-437
1-437
1-439
1-437
1-797
1-807
1-437
1-437

MJ2955A
MJ3000
MJ3001
MJ3029
MJ3030
MJ3040
MJ3041
MJ3042
MJ3055
MJ3055A

MDS20
MDS21
MDS26
MDS27
MDS60
MDS73
MDS74
MDS75
MDS76
MDS77

MDS20
MDS21
MDS26
MDS27
MDS60
MDS77
MJEl72
MJE253
MDS76
MDS77

*Consult factory if a direct replacement is necessary.
'*To be introduced. Contact factory for Data Sheet.

1-21

Motorola
Direct
Replacement

Motorola
Similar
Replacement
MDS27

BU205
BU205
MJ400
MJ410
MJ411
MJ413
MJ423
MJ424
MJ425

Page #

2N6308
2N6545

1-441
1-388
1-388
1-93
1-443
1-443
1-445
1-445
1-274
1-315

2N4398
2N3713
2N3713
2N3789
2N3789
MJ12002
MJ12002
MJ12002
MJ12002

1-445
1-124
1-82
1-82
1-112
1-112
1-644
1-644
1-644
1-644

2N3739

MJ431

(2) 2N6300

1-644
1-447
1-651
1-449
1-449
1-232
1-232
1-449
1-449
1-232

(2) 2N6301
2N3766
2N3767
2N373S*
2N3739*
2N3740*
2N3741*
2N6594
MJ2955
MJE270

1-232
1-100
1-100
1-93
1-93
1-97
1-97
1-347
1-62
1-42

MJE271

MJ2955

1-42
1-451
1-451
1-336
1-199
1-196
1-196
1-347
1-196
1-62

MJ2955A
MJ3000
MJ3001
MJ3029
MJ3030
MJ3040
MJ3041
MJ3042
2N3055
2N3055A

1-65
1-451
1-451
1-453
1-453
1-455
1-455
1-455
1-62
1-65

MJ12002
MJ802
MJ12004
MJ900
MJ901
(2) 2N6298
(2) 2N6299
MJ1000
MJ100l

MJ2250

MJ2500
MJ2501
MJ2801

2N6569
2N5881*
2N5S77
2N58.78
2N6594*
2N5875

ID

INDEX CROSS-REFERENCE (Continued)

III

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

MJ3237
MJ3238
MJ3247
MJ3248
MJ4030
MJ4031
MJ4032
MJ4033
MJ4034
MJ4035

MJ3237
MJ3238
MJ3247
MJ3248
MJ4030
MJ4031
MJ4032
MJ4033
MJ4034
MJ4035

1-457
1-457
1-457
1-457
1-461
1-461
1-461
1-461
1-461
1-461

MJ10047
MJ10048
MJ10050
MJ10051
MJ10052
MJ10100
MJ10101
MJ10102
MJ10200
MJ10201

MJ10047
MJ10048
MJ10050
MJ10051
MJ10052
MJ10100
MJ10101
MJ10102
MJ10200
MJ10201

1-560
1-574
1-588
1-596
1-596
1-604
1-612
1-612
1-620
1-628

MJ4237
MJ4238
MJ4247
MJ4248
MJ4360
MJ4361
MJ4380
MJ4381
MJ4400
MJ4401

MJ4237
MJ4238
MJ4247
MJ4248

1-457
1-457
1-457
1-457
1-875
1-875
1-881
1-881
1-881
1-881

MJ10202
MJ11011
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
MJ11017
MJ11018
MJ11019

MJ10202
MJ11011
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
MJ11017
MJ11018
MJ11019

1-628
1-636
1-636
1-636
1-636
1-636
1-636
1-638
1-638
1-638

MJ4502
MJ4645
MJ4646
MJ4647
MJ6502
MJ6503
MJ6700
MJ8100
MJ8500
MJ8501

MJ4502
MJ4645
MJ4646
MJ4647
MJ6502
MJ6503
MJ6700
MJ8100
MJ8500
MJ8501

1-463
1-465
1-465
1-465
1-467
1-467
1-473
1-475
1-477
1-477

MJ11020
MJ11021
MJ11022
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
MJ12002

MJ11020
MJ11021
MJ11022
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
MJ12002

1-638
1-638
1-638
1-642
1-642
1-642
1-642
1-642
1-642
1-644

MJ8502
MJ8503
MJ8504
MJ8505
MJ10000
MJ10001
MJ10002
MJ10003
MJ10004
MJ10005

MJ8502
MJ8503
MJ8504
MJ8505
MJ10000
MJ10001
MJ10002
MJ10003
MJ10004
MJ10005

1-483
1-483
1-489
1-489
1-495
1-495
1-501
1-501
1-507
1-507

MJ12003
MJ12004
MJ12005
MJ12010
MJ12020
MJ12021
MJ12022
MJ13010
MJ13014
MJ13015

MJ12003
MJ12004
MJ12005
MJ12010
MJ12020
MJ12021
MJ12022

1-649
1-651
1-657
1-659
1-661
1-661
1-661
1-319
1-671
1-671

MJ10006
MJ10007
MJ10008
MJ10009
MJ10011
MJ10012
MJ10013
MJ10014
MJ10015
MJ10016

MJ10006
MJ10007
MJ10008
MJ10009
MJ10011
MJ10012
MJ10013
MJ10014
MJ10015
MJ10016

1-513
1-513
1-519
1-519
1-525
1-527
1-531
1-531
1-537
1-537

MJ13018
MJ13019
MJ13070
MJ13071
MJ13080
MJ13081
MJ13090
MJ13091
MJ13100
MJ13101

MJ13070
MJ13071
MJ13080
MJ13081
MJ13090
MJ13091
MJ13100
MJ13101

1-701
1-701
1-677
1-677
1-683
1-683
1-689
1-689
1-695
1-695

MJ10020
MJ10021
MJ10022
MJ10023
MJ10024
MJ10025
MJ10041
MJ10042
MJ10044
MJ10045

MJ10020
MJ10021
MJ10022
MJ10023
MJ 10024
MJ 10025
MJ10041
MJ10042
MJ10044
MJ10045

1-542
1-542
1-548
1-548
1-554
1-554
1-560
1-574
1-560
1-574

MJ13330
MJ13331
MJ13332
MJ13333
MJ13334
MJ13335
MJ14000
MJ14001
MJ14002
MJ14003

MJ13330
MJ13331
MJ13332
MJ13333
MJ13334
MJ13335
MJ14000
MJ14001
MJ14002
MJ14003

1-701
1-701
1-707
1-707
1-707
1-707
1-713
1-713
1-713
1-713

MJE13002
MJE13003
MJE13004
MJE13005
MJE13004
MJE13005

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data Sheet.

1 -22

2N6547
MJ13014
MJ13015
MJ13330
MJ13331

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

TIP49
2N6497
2N6497
2N6498
2N6498
2N6499
2N6499
2N5974
2N5975
2N5976

1-971
1-305
1-305
1-305
1-305
1-305
1-305
1-207
1-207
1-207

2N5976

1-207
1-795
1-967
1-797
1-797
1-797
1-797
1-797
1-797
1-801

MJ15001
MJ15002
MJ15003
MJ15004
MJ15011
MJ15012
MJ15015
MJ15016
MJ15022
MJ15023

MJ15001
MJ15002
MJ15003
MJ15004
MJ15011
MJ15012
MJ15015
MJ15016
MJ15022
MJ15023

1-717
1-717
1-720
1-720
1-723
1-723
1-65
1-65
1-725
1-728

MJE49
MJE51
MJE51T
MJE52
MJE52T
MJE53
MJE53T
MJE101
MJE102
MJE103

MJ15024
MJ15025
MJ15026
MJ15027
MJ16002
MJ16002A
MJ16004
MJ16006
MJ16006A
MJ16008

MJ15024
MJ15025
MJ15026
MJ15027
MJ16002
MJ16002A
MJ16004
MJ16006
MJ16006A
MJ16008

1-725
1-728
1-731
1-731
1-735
1-743
1-735
1-750
1-758
1-750

MJE104
MJE105
MJE105K
MJE170
MJE171
MJE172
MJE180
MJE181
MJE182
MJE200

MJ16010
MJ16010A
MJ16012
MJ16014
MJ16016
MJ16018
MJE29
MJE29A
MJE29S
MJE29C

MJ16010
MJ16010A
MJ16012
MJ16014
MJ16016
MJ16018
TIP29*
TIP29A*
TIP29S*
TIP29C*

1-765
1-773
1-765
1-781
1-781
1-789
1-955
1-955
1-955
1-955

MJE201
MJE202
MJE203
MJE204
MJE205
MJE205K
MJE210
MJE220
MJE221
MJE222

MJE30
MJE30A
MJE30S
MJE30C
MJE31
MJE31A
MJE31B
MJE31C
MJE32
MJE32A

TIP30*
TIP30A*
TIP30S*
TIP30C*
TIP31*
TIP31A*
TIP31 B*
TIP31C*
TIP32*
TIP32A*

1-955
1-955
1-955
1-955
1-957
1-957
1-957
1-957
1-957
1-957

MJE223
MJE224
MJE225
MJE230
MJE231
MJE232
MJE233
MJE234
MJE235
MJE240

MJE240

1-797
1-797
1-797
1-797
1-797
1-797
1-797
1-797
1-797
1-807

MJE32B
MJE32C
MJE33
MJE33A
MJE33B
MJE33C
MJE34
MJE34A
MJE34B
MJE34C

TIP32B*
TIP32C*
TIP41
TIP41A
TIP41B
TIP41C
TIP42
TlP42A
TIP42B
TIP42C

1-957
1-957
1-967
1-967
1-967
1-967
1-967
1-967
1-967
1-967

MJE241
MJE242
MJE243
MJE244
MJE250
MJE251
MJE252
MJE253
MJE254
MJE270

MJE241
MJE242
MJE243
MJE244
MJE250
MJE251
MJE252
MJE253
MJE254
MJE270

1-807
1-807
1-807
1-807
1-807
1-807
1-807
1-807
1-807
1-42

MJE41
MJE41A
MJE41 B
MJE41C
MJE42
MJE42A
MJE42B
MJE42C
MJE47
MJE48

TIP41
TIP41A
TIP41B
TlP41C
TIP42
TIP42A
TIP42B
TIP42C
TlP47
TIP48

1-967
1-967
1-967
1-967
1-967
1-967
1-967
1-967
1-971
1-971

MJE271
MJE340
MJE340K
MJE341
MJE341K
MJE344
MJE344K
MJE345
MJE350
MJE370

MJE271
MJE340

1-42
1-811
1-971
1-813
1-971
1-813
1-971
1-837
1-815
1-817

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet.

1-23

MJE105
TIP42A
MJE170
MJE171
MJE172
MJE180
MJE181
MJE182
MJE200
2N5977
2N5978
2N5978
2N5979
MJE205
TIP41A
MJE210
MJE181*
MJE181*
MJE181*
MJE182*
MJE182*
MJE182*
MJE171*
MJE171*
MJE171*
MJE172*
MJE172*
MJE172*

TIP48
MJE341
TIP47
MJE344
TIP47
MJE3439
MJE350
MJE370

1-210
1-210
1-210
1-210
1-805
1-967
1-801
1-797
1-797
1-797

INDEX CROSS-REFERENCE (Continued)

l1li

Industry
Part Number
MJE370K
MJE371
MJE371K
MJE482
MJE483
MJE484
MJE488
MJE492
MJE493
MJE494

Motorola
Direct
Replacement

Motorola
Similar
Replacement
TIP32

MJE371
TIP32
2N5190
2N5191
2N5192
2N5191
2N5193
2N5194
2N5195

1-957
1-819
1-957
1-146
1-146
1-146
1-146
1-150
1-150
1-150

MJE2102
MJE2103
MJE2150
MJE2160
MJE2360
MJE2360T
MJE2361
MJE236H
MJE2370
MJE2371
MJE2480
MJE2481
MJE2482
MJE2483
MJE2490
MJE2491
MJE2520
MJE2521
MJE2522
MJE2523

MJE520
MJE520K
MJE521
MJE521K
MJE700
MJE700T
MJE701
MJE70H
MJE702
MJE702T

MJE700
MJE700T
MJE701
MJE70H
MJE702
MJE702T

1-821
1-957
1-42
1-957
1-823
1-823
1-823
1-823
1-823
1-823

MJE703
MJE703T
MJE710
MJE711
MJE712
MJE720
MJE721
MJE722
MJE800
MJE800T

MJE703
MJE703T
MJE710
MJE711
MJE712
MJE720
MJE721
MJE722
MJE800
MJE800T

1-823
1-823
1-42
1-42
1-42
1-42
1-42
1-42
1-823
1-823

MJE2801
MJE2801K
MJE280H
MJE2901
MJE2901 K
MJE290H
MJE2955
MJE2955K
MJE2955T
MJE3055

MJE801
MJE80H
MJE802
MJE802T
MJE803
MJE803T
MJE1090
MJE1091
MJE1092
MJE1093

MJE801
MJE80H
MJE802
MJE802T
MJE803
MJE803T
MJE1090
MJE1091
MJE1092
MJE1093

1-823
1-823
1-823
1-823
1-823
1-823
1-43
1-43
1-43
1-43

MJE3055K
MJE3055T
MJE3300
MJE3301
MJE3302
MJE3310
MJE3311
MJE3312
MJE3370
MJE3371

MJE1100
MJE1101
MJE1102
MJE1103
MJE1290
MJE1291
MJE1660
MJE1661
MJE2010
MJE2011

MJE1100
MJE1101
MJE1102
MJE1103
MJE1290
MJE1291
MJE1660
MJE1661

1-43
1-43
1-43
1-43
1-827
1-827
1-827
1-827
1-967
·1-967

MJE3439
MJE3440
MJE3520
MJE3521
MJE3738
MJE3739
MJE4340
MJE4341
MJE4342
MJE4343

1-967
1-967
1-801
1-833
1-982
1-982
1-982
1-982
1-982
1,982

MJE4350
MJE4351
MJE4352
MJE4353
MJE4918
MJE4919
MJE4920
MJE4921
MJE4922
MJE4923

MJE2020
MJE2021
MJE2050
MJE2055
MJE2090
MJE2091
MJE2092
MJE2093
MJE2100
MJE2101

MJE520

Page #

Industry
Part Number

TIP31
MJE521
TIP31

TIP42
TIP42A
TIP41
TIP41A
MJE200
MJE3055
TIP125
TIP125
TIP126
TIP126
TIP120
TIP120

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data Sheet.

1-24

Motorola
Direct
Replacement

Motorola
Similar
Replacement
TIP121
TIP121
MJE210
TIP48
MJE2360T

Page #

TIP32
TIP32A

1-982
1-982
1-801
1-971
1-829
1-829
1-829
1-829
1-957
1-957

TlP31
TlP31A
2N6121
2N6122
TIP32
TIP32A
TIP31
TIP31A
TIP31
TIP31A

1-957
1-957
1-957
1-241
1-241
1-957
1-957
1-957
1-957
1-957

MJE2360T
MJE236H
MJE236H

MJE2801
MJE280H
MJE280H
MJE2901
MJE290H
MJE290H
MJE2955
MJE2955T
MJE2955T
MJE3055
MJE3055T
MJE3055T
MJE3300
MJE3301
MJE3302
MJE3310
MJE3311
MJE3312
MJE370
2N5193
MJE3439
MJE3440
MJE520
2N5190
TIP47
TIP48
MJE4340
MJE4341
MJE4342
MJE4343
MJE4350
MJE4351
MJE4352
MJE4353
TIP30
TIP30A
TIP30B
TIP29
TIP29A
TIP29B

1-831
1-831
1-831
1-831
1-831
1-831
1-833
1-833
1-833
1-833
1-833
1-833
1-835
1-835
1-835
1-835
1-835
1-835
1-817
1-150
1-837
1-837
1-821
1-146
1-971
1-971
1-839
1-839
1-839
1-839
1-839
1-839
1-839
1-839
1-955
1-955
1-955
1-955
1-955
1-955

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number
MJE5170
MJE5171
MJE5172
MJE5180
MJE5181
MJE5182
MJE5190
MJE5191
MJE5192
MJE5193
MJE5194
MJE5195
MJE5655
MJE5656
MJE5657
MJE5730
MJE5731
MJE5732
MJE5740
MJE5741
MJE5742
MJE5850
MJE5851
MJE5852
MJE5960
MJE5974
MJE5975
MJE5976
MJE5977
MJE5978

Motorola
Direct
Replacement

Motorola
Similar
Replacement

MJE5170
MJE5171
MJE5172
MJE5180
MJE5181
MJE5182
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126
TIP47
TIP48
TIP49
MJE5730
MJE5731
MJE5732
MJE5740
MJE5741
MJE5742
MJE5850
MJE5851
MJE5852
2N6489
TIP42
TIP42A
TIP42B
TIP41
TIP41A

Motorola
Direct
Replacement

Page #
1-843
1-843
1-843
1-843
1-843
1-843
1-241
1-241
1-241
1-241

MJE15029
MJE15030
MJE15031
MJE16002
MJE16004
MJH6282
MJH6283
MJH6284
MJH6285
MJH6286

MJE15029
MJE15030
MJE15031
MJE16002
MJE16004
MJH6282""
MJH6283""
MJH6284""
MJH6285""
MJH6286""

1-909
1-909
1-909
1-913
1-913
1-45
1-45
1-45
1-45
1-45

1-241
1-241
1-971
1-971
1-971
1-847
1-847
1-847
1-851
1-851

MJH6287
MJH11017
MJH11018
MJH11019
MJH11020
MJH11021
MJH11022
MJH12004
MJH13090
MJH13091

MJH6287*"
MJH11017*"
MJH11018""
MJH11019""
MJH11020""
MJH11021""
MJH11022""
MJH12004
MJH13090
MJH13091

1-45
1-45
1-45
1-45
1-45
1-45
1-45
1-651
1-689
1-689

1-851
1-855
1-855
1-855
1-301
1-967
1-967
1-967
1-967
1-967

MJH16002
MJH16002A
MJH16004
MJH16006
MJH16006A
MJH16008
MJH16010
MJH16010A
MJH16012
MJH16018

MJH16002
MJH16002A
MJH16004
MJH16006
MJH16006A
MJH16008
MJH16010
MJH16010A
MJH16012
MJH16018

1-913
1-743
1-913
1-750
1-758
1-750
1-765
1-773
1-765
1-789

MPC900

MPSU01
MPSU01A
MPSU02
MPSU03
MPSU04
MPSU05

MPSU01
MPSU01A
MPSU02
MPSU03
MPSU04
MPSU05

MC1563 &
2N6050
MC1726 &
2N6077

MJE5979
MJE5980
MJE5981
MJE5982
MJE5983
MJE5984
MJE5985
MJE6040
MJE6041
MJE6042

MJE6040
MJE6041
MJE6042

1-967
1-301
1-301
1-301
1-301
1-301
1-301
1-221
1-221
1-221

MJE6043
MJE6044
MJE6045
MJE8500
MJE8501
MJE8502
MJE8503
MJE10011
MJE12007
MJE13002

MJE6043
MJE6044
MJE6045
MJE8500
MJE8501
MJE8502
MJE8503
MJE10011
MJE12007
MJE13002

1-221
1-221
1-221
1-861
1-861
1-867
1-867
1-51
1-873
1-875

MPSU06
MPSU07
MPSU10
MPSU11
MPSU12
MPSU31
MPSU45
MPSU47
MPSU51
MPSU51A

MPSU06
MPSU07
MPSU10

MJE13003
MJE13004
MJE13005
MJE13006
MJE13007
MJE13008
MJE13009
MJE13070
MJE13071
MJE15028

MJE13003
MJE13004
MJE13005
MJE13006
MJE13007
MJE13008
MJE13009
MJE13070
MJE13071
MJE15028

1-875
1-881
1-881
1-887
1-887
1-895
1-895
1-903
1-903
1-909

MPSU52
MPSU55
MPSU56
MPSU57
MPSU60
MPSU95
NSD102
NSD103
NSD104
NSD105

MPSU52
MPSU55
MPSU56
MPSU57
MPSU60
MPSU95

TIP41B
2N6489
2N6490
2N6491
2N6486
2N6487
2N6488

Motorola
Similar
Replacement

Industry
Part Number

MPC1000

"Consult factory If a direct replacement IS necessary.
""To be introduced. Contact factory for Data Sheet.

1-25

MPSU10
MPSU45
MPSU31
MPSU45
MPSU31
MPSU51
MPSU51A

2N6551
2N6551
2N6552
2N6552

Page #

1-228
1-236
1-921
1-921
1-923
1-925
1-925
1-929
1-929
1-931
1-933
1-933
1-939
1-936
1-939
1-936
1-942
1-942
1-944
1-946
1-946
1-948
1-950
1-952
1-326
1-326
1-326
1-326

III

INDEX CROSS-REFERENCE (Continued)

III

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

NSD106
NSD131
NSD132
NSD133
NSD134
NSD135
NSD151
NSD152
NSD202
NSD203

2N6553
2N6557
2N6557
2N6558
2N6558
2N6559
2N6549
2N6548
2N6554
2N6554

1-326
1-333
1-333
1-333
1-333
1-333
1-323
1-323
1-330
1-330

NSP597
NSP598
NSP599
NSP600
NSP695
NSP695A
NSP696
NSP696A
NSP697
NSP697A

TlP31A
TIP32A
TIP31B
TIP32B
TIP120
TIP100
TIP125
TlPl05
TIP120
TIP100

1-957
1-957
1-957
1-957
1-982
1-975
1-982
1-975
1-982
1-975

NSD204
NSD205
NSD206
NSD3439
NSD3440
NSDUOI
NSDUOIA
NSDU05
NSDU06
NSDU07

2N6555
2N6555
2N6556
MJE3439
MJE3440
MPSU01
MPSUOIA
MPSU05
MPSU06
MPSU07

1-330
1-330
1-330
1-837
1-837
1-921
1-921
1-929
1-929
1-931

NSP698
NSP698A
NSP699
NSP699A
NSP700
NSP700A
NSP701
NSP702
NSP2010
NSP2011

TIP125
TIP105
TIP121
TIP101
TIP126
TIP106
TIP122
TIP127
TIP42
TIP42A

1-982
1-975
1-982
1-975
1-982
1-975
1-982
1-982
1-967
1-967

NSDU45
NSDU51
NSDU51A
NSDU55
NSDU56
NSDU57
NSE170
NSE171
NSE180
NSE181

MPSU45
MPSU51
MPSU51A
MPSU55
MPSU56
MPSU57
MJE170
MJE171
MJE180
MJE181

1-939
1-942
1-942
1-946
1-946
1-948
1-797
1-797
1-797
1-797

NSP2021
NSP2090
NSP2091
NSP2092
NSP2093
NSP2100
NSP2101
NSP2102
NSP2103
NSP2370

TIP41A
TIP125
TIP125
TIP126
TIP126
TIP120
TIP120
TIP121
TIP121
TIP32

1-967
1-982
1-982
1-982
1-982
1-982
1-982
1-982
1-982
1-957

NSP41
NSP41A
NSP41B
NSP41C
NSP42
NSP42A
NSP42B
NSP42C
NSP105
NSP205

TIP41
TIP41A
TIP41B
TIP41C
TIP42
TIP42A
TIP42B
TIP42C
TIP42A
TIP41A

1-967
1-967
1-967
1-967
1-967
1-967
1-967
1-967
1-967
1-967

NSP2480
NSP2481
NSP2490
NSP2491
NSP2520
NSP2955
NSP3054
NSP3055
NSP4918
NSP4919

TIP31
TIP31A
TIP32
TIP32A
TIP31
MJE2955T
TIP31A
MJE3055T
TIP30
TIP30A

1-957
1-957
1-957
1-957
1-957
1-833
1-957
1-833
1-955
1-955

NSP370
NSP371
NSP520
NSP521
NSP575
NSP576
NSP577
NSP578
NSP579
NSP580

TIP32
TIP32
TIP31
TIP31
TIP29A
TIP30A
TIP29A
TIP30A
TlP29B
TIP30B

1-957
1-957
1-957
1-957
1-955
1-955
1-955
1-955
1-955
1-955

NSP4920
NSP4921
NSP4922
NSP4923
NSP5190
NSP5191
NSP5192
NSP5193
NSP5194
NSP5195

TIP30B
TIP29
TIP29A
TIP29B
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126

1-955
1-955
1-955
1-955
1-241
1-241
1-241
1-241
1-241
1-241

NSP581
NSP582
NSP585
NSP586
NSP587
NSP588
NSP589
NSP590
NSP595
NSP596

TIP29C
TIP30C
TIP29A
TlP30A
TIP29A
TIP30A
TIP29B
TlP30B
TIP31A
TIP32A

1-955
1-955
1-955
1-955
1-955
1-955
1-955
1-955
1-957
1-957

NSP5974
NSP5975
NSP5976
NSP5977
NSP5978
NSP5979
NSP5980
NSP5981
NSP5982
NSP5983

TIP42
TIP42A
TIP42B
TIP41
TIP41A
TIP41B
2N6489
2N6490
2N6491
2N6486

1-967
1-967
1-967
1-967
1-967
1-967
1-301
1-301
1-301
1-301

'Consult factory if a direct replacement is necessary.
"To be introduced. Contact factory for Data Sheet.

1-26

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

NSP5984
NSP5985
PM26K380
PM27K380
PMD10K-40
PMD10K-60
PMD10K-80
PMD10K-l00
PMDllK-40
PMDllK-60

2N6487
2N6488
MJ13015
2N6543
2N6057
2N6057
2N6058
2N6059
2N6050
2N6050

1-301
1-301
1-671
1-309
1-228
1-228
1-228
1-228
1-228
1-228

RCA29A
RCA29B
RCA29C
RCA30
RCA30A
RCA30B
RCA30C
RCA31
RCA31A
RCA31B

TIP29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
TIP31
TIP31A
TIP31B

1-955
1-955
1-955
1-955
1-955
1-955
1-955
1-957
1-957
1-957

PMDllK-80
PMDllK-l00
PMD12K-40
PMD12K-60
PMD12K-80
PMD12K-l00
PMD13K-40
PMD13K-60
PMD13K-80
PMD13K-l00

2N6051
2N6052
MJ1000
MJ1000
MJ100l
2N6059
MJ900
MJ900
MJ901
2N6052

1-228
1-228
1-449
1-449
1-449
1-228
1-449
1-449
1-449
1-228

RCA31C
RCA32
RCA32A
RCA32B
RCA32C
RCA41
RCA41A
RCA41B
RCA41C
RCA42

TIP31C
TIP32
TIP32A
TIP32B
TIP32C
TIP41
TIP41A
TIP41B
TIP41C
TIP42

1-957
1-957
1-957
1-957
1-957.
1-967
1-967
1-967
1-967
1-967

PMD16K-40
PMD16K-60
PMD16K-80
PMD16K-l00
PMD17K-40
PMD17K-60
PMD17K-80
PMD17K-l00
PMD20K-120
PMD25K-120

2N6282
2N6282
2N6283
2N6284
2N6285
2N6284
2N6286
2N6287
2N6578
2N6578

1-265
1-265
1-265
1-265
1-265
1-265
1-265
1-265
1-340
1-340

RCA42A
RCA42B
RCA42C
RCA120
RCA121
RCA122
RCA125
RCA126
RCA410
RCA411

TIP42A
TIP42B
TIP42C
TIP120
TIP121
TIP122
TIP125
TIP126
MJ410
MJ411

1-967
1-967
1-967
1-982
1-982
1-982
1-982
1-982
1-443
1-443

PMD1600K
PMD1601K
PMD1602K
PMD1603K
PM01700K
PMD1701K
PMD1702K
PMD1703K
RCA1BOl
RCA1B04

2N6282
2N6282
2N6283
2N6284
2N6285
2N6285
2N6286
2N6287
2N5878
MJ15022

1-265
1-265
1-265
1-265
1-265
1-265
1-265
1-265
1-196
1-725

RCA413
RCA423
RCA431
RCA1000
RCA100l
RCA3054
RCA3055
RCA3441
RCA6263
RCA8203

MJ413
MJ423
MJ431
MJ1000
MJ100l
2N6122
2N6487
MJE15030
MJE15030
2N6666

1-445
1-445
1-445
1-449
1-449
1-241
1-301
1-909
1-909
1-351

RCA1B05
RCA1B06
RCA1B09
RCA1C03
RCA1C04
RCA1C05
RCA1C06
RCA1C07
RCA1C08
RCA1C09

MJ15024
MJ15003
MJ15024
MJE15028
MJE15029
2N6130
2N6133
MJE3055T
MJE2955T
MJE3055T

1-725
1-720
1-725
1-909
1-909
1-47
1-47
1-833
1-833
1-833

RCA8203A
RCA8203B
RCA8350
RCA8350A
RCA8350B
RCA8766
RCA8766A
RCA8766B
RCA8766C
RCA8766D

2N6667
2N6668
2N6648
2N6649
2N6650
MJ10002
MJ10002
MJ10003
MJ10003
MJ10003

1-351
1-351
1-289
1-289
1-289
1-501
1-501
1-501
1-501
1-501

RCA1Cl0
RCA1Cll
RCA1C12
RCA1C13
RCA1C14
RCA1C15
RCA1C16
RCA1E02
RCA1E03
RCA29

2N6292
2N6107
MJE15028
MJE15029
2N6290
2N6388
2N6668
2N3583
2N6420
TIP29

1-238
1-238
1-909
1-909
1-238
1-293
1-351
1-76
1-76
1-955

RCA8766E
RCA8767
RCA8767A
RCA8767B
RCA9113
RCA9113A
RCA9113B
RCPlllA
RCPlllB
RCPllle

MJ10003
2N6546
2N6547
2N6547
2N6546
2N6547
2N6547
2N6557
2N6557
2N6558

1-501
1-319
1-319
1-319
1-319
1-319
1-319
1-333
1-333
1-333

'Consult factory If a direct replacement IS necessary.
"To be introduced. Contact factory for Data Sheet.

1-27

l1li

INDEX CROSS-REFERENCE (Continued)

l1li

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

RCPlllD
RCPl13A
RCPl13B
RCPl13C
RCPl13D
RCPl15
RCPl15B
RCPl17
RCPl17B
RCP131A

2N6559
2N6557
2N6557
2N6558
2N6559
2N6591
2N6557
2N6591
2N6557
2N6592

1-333
1-333
1-333
1-333
1-333
1-343
1-333
1-343
1-333
1-343

SDN6253
SDT7AOl
SDT7A02
SDT7A03
SDT7A08
SDT7A09
SDT401
SDT402
SDT410
SDT411

MJ10003
2N5428
2N5428
2N5428
2N5427
2N5427
2N6543
2N6543
MJ410
MJ411

1-501
1-170
1-170
1-170
1-170
1-170
)-309
1"309
1-443
1-443

RCP131 B
RCP131C
RCP131 D
RCP133A
RCP133B
RCP133C
RCP133D
RCP135
RCP135B
RCP137

2N6593
2N6558
2N6559
2N6592
2N6593
2N6558
2N6559
2N6553
2N6557
2N6553

1-343
1-333
1-333
1-343
1-343
1-333
1-333
1-326
1-333
1-326

SDT413
SDT423
SDT424
SDT425
SDT430
SDT431
SDT520
SDT521
SDT522
SDT525

MJ413
MJ423
2N6308
2N6545
2N6307
MJ431
2N6306
2N6306
2N6306
2N6306

1-445
1-445
1-274
1-315
1-274
1-445
1-274
1-274
1-274
1-274

RCP137B
RCS579
RCS617
RCS618
SDM6000
SDM6001
SDM6002
SDM6003
SDM20301
SDM20302

2N6557
2N6306
2N5882
2N5880
MJ10012
MJ10012
MJ10012
MJ10012
MJ4033
MJ4033

1-333
1-274
1-199
1-199
1-527
1-527
1-527
1-527
1-461
1-461

SDT526
SDT527
SOT530
SDT531
SDT532
SDT535
SDT536
SDT537
SDT540
SOT541

2N6306
2N6306
2N6306
2N6306
2N6306
2N6306
2N6307
2N6307
2N6307
2N6307

1-274
1-274
1-274
1-274
1-274
1-274
1-274
1-274
1-274
1-274

SDM20303
SDM20304
SDM20311
SOM20312
SDM20313
SOM20314
SDM20321
SDM20322
SOM20323
SDM20324

MJ4034
MJ4035
MJ4033
MJ4033
MJ4034
MJ4035
MJ4033
MJ4033
MJ4034
MJ4035

1-461
1-461
1-461
1-461
1-461
1-461
1-461
1-461
1-461
1-461

SOT542
SDT545
SOT546
SDT547
SDT550
SOT551
SDT552
SDT707
SOT1050
SDT1051

2N6307
2N6308
2N6308
2N6308
2N6308
2N6308
2N6308
2N5427
2N5838
2N5840

1-274
1-274
1-274
1-274·
1-274
1-274
1-274
1-170
1-193
1-193

SOM21301
SDM21302
SOM21303
SDM21304
SOM21311
SDM21312
SDM21313
SOM21314
SDN1010
SON1020

MJ4030
MJ4030
MJ4031
MJ4032
MJ4030
MJ4030
MJ4031
MJ4032
2N6056
MJ3001

1-461
1-461
1-461
1-461
1-461
1-461
1-461
1-461
1-232
1-451

SDT1052
SDT1053
SDT1054
SOT1055
SDT1056
SOT1057
SDT1058
SDT1059
SDT1060
SOT1061

2N6543
2N6543
2N6543
2N5838
2N3902
2N6545
2N6545
2N6545
2N5838
2N3902

1-309
1-309
1-309
1-193
1-116
1-315
1-315
1-315
1-193
1-116

SDN4040
SDN4045
SDN6000
SON6001
SDN6002
SON6060
SDN6061
SON6062
SON6251
SON6552

MJ10000
MJ10000
MJ10000
MJ10000
MJ10001
MJ10000
MJ10000
MJ10000
MJ10002
MJ10002

1-495
1-495
1-495
1-495
1-495
1-495
1-495
1-495
1-501
1-501

SOT1062
SDT1063
SDT1064
SDT1301
SOT1302
SOT1303
SDT1304
SDT3125
SDT3126
SDT3321

2N6545
2N6545
2N6545
2N6235
2N6235
2N6235
2N6235
2N6186
2N6186
MJ8100

1-315
1-315
1-315
1-254
1-254
1-254
1-254
1-245
1-245
1-475

*Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Data Sheet.

1 -28

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Moforola
Similar
Replacement

Page II

Industry
Part Number

Motorola
Dlract
Replacement

Motorola
Similar
Replacement

Page II

50T3322
50T3323
50T3324
50T3325
50T3326
50T3327
50T3328
50T3401
5DT3402
50T3403

MJ8100
2N6190
2N6192
MJ8100
MJ8100
2N6190
2N6192
2N5347
2N5347
2N5347

1-475
1-248
1-248
1-475
1-475
1-248
1-248
1-166
1-166
1-166

50T5509
50T5511
50T5512
50T5513
50T5514
50T5901
50T5902
50T5903
50T5904
50T5905

2N5338
2N5337
2N5337
2N5337
2N5339
2N3766
2N3766
2N3767
2N5050
2N5050

1-100
HOO
HOO
1-144
1-144

50T3404
50T3405
50T3406
50T3407
50T3408
50T3421
50T3422
50T3423
50T3424
50T3425

2N5349
2N5347
2N5347
2N5347
2N5349
2N5337
2N5337
2N5336
2N5338
2N5337

1-166
1-166
1-166
1-166
1-166
1-158
1-158
1-158
1-158
1-158

50T5906
50T5907
50T5908
50T5909
50T5910
50T5911
50T5912
50T5913
, 50T5914
50T5951

2N3766
2N3766
2N3767
2N5050
2N5050
2N5427
2N5427
2N5427
2N5429
2N5051

HOO
1-100
HOD
1-144
1-144
1-170
1-170
1-170
1-170
1-144

50T3426
50T3427
50T3428
50T3501
50T3502
50T3503
50T3504
50T3505
50T3506
50T3507

2N5337
2N5336
2N5338
2N3719
2N3720
2N6303
2N6192
2N3867
2N3868
2N6303

1-158
1-158
1-158
1-88
1-88
1-88
1-248
1-88
1-88
1-88

50T5952
50T5953
50T5954
50T5955
50T5956
50T6308
50T6309
50T6310
5DT6311
50T6312

2N3583
2N5052
2N5051
2N3583
2N5347
2N5347
2N5347
2N5347
2N5347

1-76
1-144
1-144
1-76
1-144
1-166
1-166
1-166
1-166
1-166

50T3508
50T3775
50T3776
50T3777
50T3778
50T4451
50T4452
50T4453
50T4454
50T4455

2N6193
2N3867
2N3868
2N6303
2N3867
2N5337
2N5336
2N5337
2N5336
2N5337

1-248
1-88
1-88
1-88
1-88
1-158
1-158
1-158
1-158
1-158

50T6313
50T6314
50T6315
50T6316
50T6408
50T6409
50T6410
50T6411
50T6412
50T6413

2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347
2N5347

1-166
1-166
1-166
1-166
1-166
H66
1-166
1-166
1-166
1-166

50T4456
50T4483
50T4901
50T4902
50T4903
50T4904
50T4905
50T5101
50T5102
50T5103

2N5337
2N5337
2N3583
2N6233
2N6234
2N3585
2N3585
TIP41A
TIP41A
TIP41A

1-158
1-158
1-76
1-254
1-254
1-76
1-76
1-967
1-967
1-967

50T6414
50T6415
50T6416
50T6901
50T6902
50T6903
50T6904
50T7201
50T7202
50T7203

2N5347
2N5347
2N5347
2N5050
2N5051
2N5052
2N5052
2N6306
2N6306
2N6306

1-166
1-166
1-166
1-144
1-144
1-144
1-144
1-274
1-274
1-274

50T5111
50T5112
50T5113
50T5501
50T5502
50T5503
50T5504
50T5506
50T5507
::OT5508

TIP42A
TIP42A
TIP42A
2N5337
2N5337
2N5337
2N5539
2N5337·
2N5337
2N5336

1-967
1-967
1-967
1-158
1-158
1-158
1-285
1-158
1-158
1-158

50T7204
50T7205
50T7206
50T7207
50T7208
50T7209
50T7603
50T7604
50T7605
50T7609

2N6307
2N6308
2N6341
2N6306
2N6306
2N6307
2N6338
2N6339
2N6341
2N6338

1-274
1-274
1-282
1-274
1-274
1-274
1-282
1-282
1-282
1-282

'Consult factory if a direct replacement is necessary.
**To be introduced. Contact factory for Oata 5heet.

1-29

2N505~

1-158
1-158
1-158
1-158

J;:158

ID

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Industry
Part Number

Page #

2N6339
2N6341
2N6249
2N5881
2N5881
2N5882
2N5629
2N5630
2N5631
2N6569

1-282
1-282
1-257
1-199
1-199
1-199
1-174
1-174
1-174
1-336

5E9331
SE9400
5E9401
5E9402
SE9403
5E9404
SE9406
5E9407
5E9408
5V7056

50T9202
50T9203
. 50T9204
50T9205
50T9206
50T9207
50T9208
50T9209
50T9210
50T9301

2N5878
2N5632
2N5633
2N6569
2N3055
2N5878
2N5632
2N5633
2N6569
2N4231A

1-196
1-178
1-178
1-336
1-62
1-196
1-178
1-178
1-336
1-120

50T9302
50T9303
50T9304
50T9305
50T9306
50T9307
50T9308
50T9309
50T9701
50T9702

2N4232A
2N4233A
2N4231A
2N4232A
2N4233A
2N3713
2N3715
2N3716
2N5303
2N5629

50T9703
50T9704
50T9705
50T9706
50T9707
50T12301
50T12302
50T12303
50T12305
SOT12306

Motorola
Direct
Replacement

Motorola
Similar
Replacement

MJ900
MJ901
MJ4030
MJ4031
MJ4032
2N6558

5VT100-5C
SVT200-5C
5VT200-10
SVT200-10C
5VT250-3C
SVT250-5
5VT250-5C
5VT250-10
5VT250-10C
SVT300-3C

2N5632
2N6306
2N6306
MJ15022
2N5838
2N5838
2N6306
2N6306
MJ15024
2N6307

1-178
1-274
1-274
1-725
1-193
1-193
1-274
1-274
1-725
1-274

1-120
1-120
1-120
1-120
1-120
1-82
1-82
1-82
1-154
1-174

5VT300-5
5VT300-5C
5VT300-10
5VT300-10C
5VT350-3
SVT350-3C
5VT350-5
5VT350-5C
5VT350-12
5VT400-3

2N6542
2N6307
2N6307
MJ13090
2N6545
2N6308
2N5840
MJ13080
2N6547
2N6545

1-309
1-274
1-274
1-689
1-315
1-274
1-193
1-683
1-319
1-315

2N5630
2N5882
2N5629
2N5630
2N3055
2N5039
2N5347
2N5347
2N5347
2N5347

1-174
1-199
1-174
1-174
1-62
1-142
1-166
1-166
1-166
1-166

SVT400-3C
5VT400-5
SVT400-5C
5VT400-12
5VT450-3
5VT450-3C
SVT450-5
5VT450-5C
5VT6000
5VT6001

2N6543
2N6543
2N6545
MJ13090
2N6545
MJ13334
2N6543
MJ13080
MJ10004
MJ10004

1-309
1-309
1-315
1-689
1-315
1-707
1-309
1-683
1-507
1-507

50T12307
50T13301
50T13302
50T13303
SOT13304
SOT13305
SOTB01
SOTB02
SOTB03
SOTB05

2N5347
2N6546
2N6547
2N6547
MJ13091
MJ13091
2N5346
2N5346
2N5348
2N5346

1-166
1-319
1-319
1-319
1-689
1-689
1-166
1-166
1-166
1-166

SVT6002
5VT6060
5VT6061
5VT6062
SVT6251
SVT6252
SVT6253
SVT6546
SVT6547
SVT7520

MJ10005
MJ10004
MJ10004
MJ10005
MJ10006
MJ10006
MJ10007
MJ13090
MJ13090
2N6543

1-507
1-507
1-507
1-507
1-513
1-513
1-513
1-689
1-689
.1-309

50TB06
SOTB07
SE9300
SE9301
SE9302
5E9303
5E9304
5E9306
5E9307
SE9308

2N5346
2N5346

1-166
1-166
1-47
1-47
1-47
1-449
1-449
. 1-461
1-461
1-461

SVT7521
SVT7522
SVT7523
SVT7524
SVT7525
SVT7530
SVT7531
SVT7532
5VT7533
5VT7534

2N6543
MJ13335
2N6308
2N6543
MJ13334
MJ13081
MJ13080
MJ16004
MJ13080
MJ13080

1-309
1-707
-1-274
1-309
1-707
1-683
1-683
1-735
1-683
1-683

SE9300
SE9301
SE9302
MJ1000
MJ1001
MJ4032
MJ4034
MJ4035

*Consult factory if a direct replacement is necessary
**To be introduced. Contact factory for Data 5heet.

1 -30

2N3739

Page #
1-93
1-47
1-47
1-47
1-449
1-449
1-461
1-461
1-461
1-333

50T7610
50T7611
50T7612
50T7731
50T7732
5DT7733
50T7734
50T7735
5DT7736
50T9201

.

Motorola
Similar
Replacement

5E9400
SE9401
5E9402

INDEX CROSS-REFERENCE (Continued)
Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

Industry
Part Number

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #
1-963
1-963
1-963
-

SVT7535
SVT7540
SVT7541
SVT7542
SVT7543
SVT7544
SVT7545
SVT7550
SVT7551
SVT7552

MJ16004
MJ16008
MJ16008
MJ16008
MJ13080
MJ13080
MJ16008
MJ13091
MJ16010
MJ16010

1-735
1-750
1-750
1-750
1-683
1-683
1-750
1-689
1-765
1-765

TIP35A
TIP35B
TIP35C
TIP35D
TIP35E
TIP35F
TIP36
TIP36A
TIP36B
TIP36C

SVT7553
SVT7554
SVT7555
SVT7560
SVT7561
SVT7563
SVT7564
SVT7565
SVT7570
SVT7571

MJ13090
MJ13091
MJ16010
MJ13091
MJ16012
MJ13090
MJ13090
MJ13090
MJ13091
MJ16012

1-689
1-689
1-765
1-689
1-765
1-689
1-689
1-689
1-689
1-765

TIP36D
TIP36E
TIP36F
TIP41
TIP41A
TIP41B
TIP41C
TIP41D
TIP41E
TIP41F

TIP41
TIP41A
TIP41B
TIP41C
TIP41D
T1P41E
TIP41F

1-967
1-967
1-967
1-967
1-47
1-47
1-47

SVT7573
SVT7574
SVT7575
TIP29
TIP29A
TIP29B
T1P29C
TIP29D
T1P29E
TIP29F

MJ13090
MJ13090
MJ16012
TIP29
TIP29A
TIP29B
TIP29C
TIP29D
TIP29E
TIP29F

1-689
1-689
1-765
1-955
1-955
1-955
1-955
1-46
1-46
1-46

TIP42
TIP42A
TIP42B
TIP42C
TIP42D
TIP42E
TIP42F
TIP47
TIP48
TIP49

TIP42
TIP42A
TIP42B
TIP42C
TIP42D
TIP42E
TIP42F
TIP47
TIP48
TIP49

1-967
1-967
1-967
1-967
1-47
1-47
1-47
1-971
1-971
1-971

T1P30
TIP30A
TIP30B
TIP30C
TIP30D
TIP30E
TIP30F
TIP31
T1P31A
TIP31B

TIP30
TIP30A
TIP30B
TIP30C
TIP30D
TIP30E
TIP30F
TIP31
TIP31A
TIP31B

1-955
1-955
1-955
1-955
1-46
1-46
1-46
1-957
1-957
1-957

TIP50
TIP61
TIP61A
TIP61B
TIP61C
TIP62
TIP62A
TIP62B
TIP62C
TIP63

TIP50
TIP61
T1P61A
TIP61B
TIP61C
TIP62
TIP62A
TIP62B
TIP62C
TIP47

1-46
1-46
1-46
1-46
1-46
1-46
1-46
1-46
1-46
1-971

TIP31C
TIP31D
T1P31E
TIP31F
TIP32
TIP32A
TIP32B
TIP32C
TIP32D
T1P32E

TIP31C
TIP31D
TIP31E
TIP31F
TIP32
TIP32A
TIP32B
TIP32C
TIP32D
TIP32E

1-957
1-46
1-46
1-46
1-957
1-957
1-957
1-957
1-46
1-46

TIP64
TIP73
TIP73A
TIP73B
TIP74
TIP74A
T1P74B
TIP75
TIP75A
T1P75B

TIP48

TIP32F
TIP33
TIP33A
TIP33B
TIP33C
TIP34
TIP34A
TIP34B
TIP34C
TIP35

TIP32F
TIP33
TIP33A
TIP33B
TIP33C
TIP34
TIP34A
TIP34B
T1P34C
TIP35

1-46
1-961
1-961
1-961
1-961
1-961
1-961
1-961
1-961
1-963'

TIP75C
TIP100
TIP101
TIP102
TIP105
TIP106
TIP107
TIP110
TIP111
TIP112

·Consult factory if a direct replacement is necessary,
·*To be introduced, Contact factory for Data Sheet.

1-31

TIP35A
TIP35B
TIP35C

··
·

1-963
1-963
1-963
1-963

TIP36
TIP36A
TIP36B
TIP36C

··
·

-

-

2N6486
2N6487
2N6488
2N6489
2N6490
2N6491
MJE13005
MJE13004
MJE13004
MJE13005
T1P100
TIP101
TIP102
TIP105
TIP106
TIP107
TIP110
TIP111
TIP112

1-971
1-301
1-301
1-301
1-301
1-301
1-301
1-881
1-881
1-881
1-881
1-975
1-975
1-975
1-975
1-975
1-975
1-979
1-979
1-979

INDEX CROSS-REFERENCE (Cohtinued)
Industry
Part Number

Matarala
Direct
Replacement

Matarala
Similar
Replacement

Page #

Industry
Part Number

Matarala
Direct
Replacement

Matorala
Similar
Replacement

Page #

TIP115
TIPl16
TIPl17
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
TIP140

T1P115
TIPl16
TIPl17
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
TIP140

1-979
1-979
1-979
1-982
1-982
1-982
1-982
1-982
1-982
1-986

TIP565
TIP575
T1P575A
TIP575B
TIP575C
TIP600
TIP601
TIP602
TIP605
TIP606

MJ10009
MJ13080
MJ13080
MJ13080
MJ13080
TIP100
TIP101
TIP102
TIP105
TIP106

1-519
1-683
1-683
1-683
1-683
1-975
1-975
1-975
1-975
1-975

TIP140T
TIP141
TIP141T
TIP142
TIP142T
TlP145
T1P145T
TIP146
T1P146T
TIP147

TIP140T
TIP141
TIP141T
TIP142
TIP142T
TIP145
TIP145T
TIP146
TIP146T
TIP147

1-47
1-986
1-47
1-986
1-47
1-986
1-47
1-986
1-47
1-986

TIP607
TIP620
TIP621
TIP622
TIP625
TIP626
TIP627
TIP640
TIP641
TIP645

TIP107
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
2N6384
2N6385
2N6649

1-975
1-982
1-982
1-982
1-982
1-982
1-982
1-289
1-289
1-289

TlP147T
TIP150
TlP151
TIP152
TIP160
TiP161
TIP162
TIP510
TIP511
TIP512

TIP147T
MJE13006
MJE13007
MJE13007
MJE5740
MJE5741
MJE5742
MJ4248
MJ4247
MJ4248

1-47
1-887
1-887
1-887
1-851
1-851
1-851
1-457
1-457
1-457

TIP646
TIP660
TIP661
TIP662
TIP663
TIP664
TIP665
TIP666
TIP667
TIP668

2N6650
MJ10002
MJ10002
MJ10003
MJ10001
MJ10008
MJ10009
MJ10002
MJ10003
MJ10013

1-289
1-501
1-501
1-501
1-495
1-519
1-519
1-501
1-501
1-531

T1P513
TIP514
TIP517
TIP518
TIP519
TIP520
TIP521
TIP522
TIP523
TIP524

MJ15012
MJ3238
2N6339
2N6341
MJ4238
MJ4238
2N6211
2N6211
MJ15012
2N6497

1-723
1-457
1-282
1-282
1-457
1-457
1-251
1-251
1-723
1-305

TIP701
TIP702
TIP2955
TIP3055
TIPL751
TIPL751A
TIPL752
TIPL752A
TIPL753
TIPL753A

MJ13080
MJ13081
MJE2955T
MJE3055T
MJ13070
MJ13071
MJ13080
MJ13080
MJ13080
MJ13080

1-683
1-683
1-990
1-990
1-677
1-677
1-683
1-683
1-683
1-683

T1P525
TIP526
TIP527
TIP528
TIP536
TIP545
TIP546
TIP550
TIP551
TIP552

MJ15011
MJ15011
MJ15012
MJ15012
MJ16006
2N6227
2N6228
MJ12002
MJ12003
MJ12004

1-723
1-723
1-723
1-723
1-750
1-189
1-189
1-644
1-649
1-651

TIPL755
TIPL755A
TIPL757
TIPL757A
TIPL760
TIPL760A
TIPL774
TIPL775
TIPL775A
UMT1008

MJ13090
MJ13091
MJ13100
MJ13101
MJE13070
MJE13071
MJ10009
MJ11018
MJ11020
MJ13014

1-689
1-689
1-695
1-695
1-903
1-903
1-519
1-638
1-638
1-671

TIP553
TIP554
T1P555
TIP556
TIP558
TIP559
TIP560
TIP562
TIP563
TIP564

MJ12004
MJ13080
MJ13080
MJ13080
MJ16006
MJ16006
MJ16006
MJ16012
MJ16012
MJll018

1-651
1-683
1-683
1-683
1-750
1-750
1-750
1-765
1-765
1-638

UMT1009
UMT1203
UMT1204
WT5100
WT5200

MJ13015
MJE13004
MJE13005
MJ13015
2N6547

1-671
1-881
1-881
1-671
1-319

}

'Consult factory if a direct replacement is necessary.
"To be introduced. Conta\200 Volts) ....... 1-54

1-33

II

I

I'

I

SELECTION BY PACKAGE
Motorola power transistors are available in a wide variety of metal and
plastic packages to match thermal, electrical and cost requirements. The
following table compares the basic packages from the standpoint of
current, voltage and power capabilities. The devices available in the
various packages are tabulated on the succeeding pages.
IcRange
(Amps)

VCE Range
(Volts)

Po
(Wattl)

Page

TO-204AA
gO-3)
ase 1
Case 11

2.5-60

40-1500

36-300

35

TO-204AE
Cale 197

2.5-60

40-1500

36-300

·35

TO-205M
(TO-5)
Case 31

3.0

40-800

6.0

38

TO-205AD
(TO-39)
Case 79

0.5-5.0

40-400

5-10

39

TO-210AA
(TO-59)
Case 160

7.0-10

60-100

60

40

~

TO-213AA
(TO-66)
Case 80

1-10

40-325·

20-90

41

~

TO-225M
(TO-126)
Case 77

0.3-5.0

25-400

12.5-40

42

5-15

40-100

65-100

43

0.5-2.0

30-300

10

43

TO-202AC
Cas. 306

0.1-3.0

30-350

6.25-12.5

44

TO-218AC
Cal. 340

5.0-25

40-800

80-150

45

Package

.~

~
'~

~
J!ff-~

~
~
~

~

TO-225AB
Case 90

Case 152

~

TO-220AB
Cas.221A

0.5-15

30-800

15-125

46

~

MO-040AA
CASE 346

50-200

200-850

500

48

~

CASE 353

25-100

250-850

250

48

SELECTION BY FUNCTION
Page

Military Qualified Power Transistors ........................................
Power Darlingtons, for applications requiring high gain ......................
Low-Voltage Power Switching Transistors (>200 Volts) ......................
Switch mode Power Transistors «200 Volts) ................................

1-34

49
51
53
54

TO-204AA (Formerly TO-3)/TO-204AE (Type)

CASE 11-01, 11-3 - 40 mil pins
CASE 1-04, 1-05 - 40 mil pins
MODIFIED TO-3
STYLE 1.
PIN 1
2
CASE

"
(D
o

BASE
EMITTER
COLLECTOR

0

'0

CASE 197-01 -

60 mil pins

Resistr've Switchmg

,I

IcConl

VCEOlsusl

Amps Max

Volls Min

2.5

700
800
1300'
1400'
1500'

3

3.5
4
5

250
275
350
325
1500'
120
200
250
300
325
400
450

500
700
800
850'
1300'
1500'

6

7.0

100
120
140
250
300
350

DeVIce Type
NPN
MJ8500
MJ8501
BU204
MJ205
BU205
MJ12002
2N5838
2N5839
2N5840
2N3902
MJ12003
2N4347
MJ410
MJ3029
MJ411
2N6542
MJ3030
2N6543
MJ13070
MJ13071
MJ16002
MJ16004
2N6834
MJ16002A
MJ8502
MJ8503
MJ12020
BU207
BU208
BU208Dt
MJ12004
2N5758
2N5759
2N5760
MJ15011
MJ3041
MJ3042

PNP

@ Ic

MHz

Po (Case)
Watts

Min

@25OC

IT

@ Ic

MiniMax

Amp

Max

Max

Amp

7.5 min
7.5 min
2 min

05
0.5
2

4
4

2
2
075 Iyp
1
075 Iyp
1
04 tVD
0.4 tYD
041Yp
0.1 typ
1

1
1
2
2
2
2
3
3
3
1
3

1

3

as

3
3
3
3
3
3
3
3
30
25
2.5
30
4.5
45
45
45
3
3
3

2 min

1.11 min

2N6226
2N6227
2N6228
MJ15012

If
!,s

hFE

Is
!,s

S/40
10/50
10/50
30/90
25 min
15/60
30/90
30 min
30/90
7/35
375 min
7/35
8 min
8 min
5 min
7 min
10/30
5.0 mIn
7.5 mIn
75 min
5 a min
225 min
2.25 min
225 min
2.5 min
25/100
20/S0
15/60
20/100
250 min
250 min

2
2
3
2
2
1
3
2
1
0.4
1
3
3
3
3
3
5
5
3
50
1
1
50
4.5
45
-4.5
4.5
3
3
3
2
2.5
25

1 tVD
1 tVD
1 tVD
1.2 typ

4 IIIP
4 typ
4 typ
5
5
5
2S

25

4

1
4
1.5
1.5
3
27
27
30
4
4

07 typ
07 typ
0.7 typ

as
05
0.5
0.3
0.35
035
03
2
2
013 tVD
06 tYD
06 typ
06 typ
1
0.5 typ
0.5 typ
05 typ

25.
6
6

15

15
4 tVD
4 typ
4 typ
4
1
1
1

125
125
36
110
36
75
100
100
100
100
100
100
100
125
100
100
125
100
125
125
125
125
125
125
150
150
125
60
60
60
100
150
150
150
200
175
175
(continued)

# Ihfel @ 1 MHz
'V(BRICEX or VIBRICES

tD SuffIx on thIS deVIce sIgnifies Internal C-E DIode

1-35

TO-204AA (FORMERLY TO-3)/TO-204AE (Type) (continued)
Resistive Switching
IcCont

VCEOlsusl

Amps Max

Volts Min

7.5

60
60

8

60
80
120
150
250
300
350

400

Device Type
NPN
2N3445
2N3447
2N3446
2N3448
MJ1000
2N6055
MJ100l
2N6056
MJ4247
MJ4248
2N6306

10

500
850·
1400·
1500·
40
60

80

100
120
140
250
325

350

400

450
500
550

600
700
800

12

15

·V(BRICEX

850·
40
60
80
100
60

@Ic

MHz

Po (Case)
Wails

IT

@Ic

I'S

Min/Max

Amp

Max

Max

Amp

Min

@25OC

0.35
0.35
0.35
0.35

5
5
5
5

10
10
10
10

MJ6502

15 min

5
5
5
5
3
4
3
4
3
3
3
2
3
5
3
5
2
5
5
6
6
5
6.0
8.0
4
5
5
3
3
4
5
5
3
3
4
5
5
5
5
5
4
2
0.5
1
2.5
5
5
5
5
5
6
5
5
5
10
10
1.5
1.5
5.0
5
4'
6
6

2
2
2
2

MJ900
2N6053
MJ901
2N6054
MJ4237
MJ4238

20/60
401120
20/60
401120
lk min
750/16k
lk min
750/16k
40 min
40 min

115
115
115
115
90
100
90
100
90
90
125
125
125
125
125
125
125
150
150
150
150
150
150
150
60
100
100
150
150
150
100
150
150
150
150
100
150
150
150
150
117
200
125
125
125
150
150
150
150
150
175
150
125"
125"
175
175
175
175
150
100
100
150
150
150
115
115
120
160

PNP

15175

2N6307
2N6544
2N6308·
2N6545
MJ13080
MJl3081
MJl6006
MJ16008
2N6835
MJl6006A
MJl2021
MJ100ll
MJl2005
2N6383
2N3713
2N3715
2N5877
2N6384
MJ3000
2N3714
2N3716
2N5878
2N6385
MJ3001
2N5632
2N6633
2N5634
2N3442
MJ15011
MJ413
MJ423
MJ431
MJ13014
MJ10002
MJ10006
MJ10003
MJ10007
MJ10012
MJl3015
SDT13304
SDT13305
MJ10013
MJ10014
MJ8504
MJ8505
MJl6018
MJl2010
2N6569
2N6057
2N6056
2N6059
2N3055
2N3055A
2N6576
2N5861

tl
I'S

hFE

15175

MJ6503
450

ts

7/35
12/60
7/35
15 min
8 min

8 min

2N6648
2N3789
2N3791
2N5875
2N6649
MJ2500
2N3790
2N3792
2N5876
2N6650
MJ2501
2N6229
2N6230
.21116231
MJ15012

2N6594
2N6050
2N6051
2N6052
MJ2955
MJ2955A
2N5879

5 min
7 min
10/30
5.0 min
5.0 min
20 min
5 min
lk/20k
15 min
30 min
20/100
lk/20k
lk min
15 min
30 min
20/100
lk/20k
lk min
25/100
20/80
15/60
20/70
20/100
20/80
30/90
15/35
6/20
3/300
30/300
30/300
30/300
100/2k
6/20
10/40
10/40
10/250
10/250
7.5 min
7.5 min
7.0 min
4 ..2 min
15/200
750/16k
750/16k
750/16k
20170
20170

2k/20k
20/100

6
4
4
4
6

1.5 typ

1.5 typ

4

4#

1.5 typ
0.4 typ
0.4 typ
1.6
2
1.6
4
1.6
4
2
1.5
1.5
2.5
2.2
2.5
3.0

1.5 typ
0.16 typ
0.16 typ
0.4
0.5
0.4
1
0.4
1
0.5
0.5
0.5
0.25
0.25
0.25
0.4
0.1 typ
1
1

4
5
5
3
4
3
5
5
5
4
5
5
5
5
5
5.0
5.0
4
5

4#
20
20
5

0.3 typ
0.3 typ
1

0.4 typ
0.4 typ
0.8

5
5
4

20#
4
4
4
20#

0.3 typ
0.3 typ
1

0.4 typ
0.4 typ
0.8

5
5
4

4
4
4
20#

0.9 typ
0.9 typ
0.9 typ

0.9 typ
0.9 typ
0.9 typ

5
5
5

5

6
5
6

10

1
1

1

2.5
2.5
2.5
2
2.5
1.5
2.5
1.5
15
2
1.6 typ
1.6\yp
2.5
2.5
4
4
2.0 typ
5
1.6 typ
1.6 typ
1,6 typ
0.7 typ

0.5
1
0.5
1
0.5
15
0.5
0.35 t}lP_
0.35 t}IP_
0.6
0.8
2
2
0.9 typ
1
1.5
1.5 tvp
1.5 typ
1.5 typ
0.3 typ

5
5
5
5
5
6
5
5
5
10
10
5
5
5.0
5
2
6
6
6
4

2
1

7
0.8

10
6

10#
10#
10#
10#

151>'1"'15~

.5 to 15
4#
4#
4#
2.5
0.8
10-200#
4

(continued)

# Ihlel @ 1 MHz

1-36

TO-204AA (FORMERLY TO-3)/TO-204AE (Type) (continued)
Resistive SWitching

Is
I eGonl

VCEOlsusl

Amps Max

Volls Min

15

80
90
120
140
150
200
250
275
300
350
400

450

16

500
850'
60
80
100
120
140
200

20

250
40
60
75
80

90
100
140
200
250
350

400

450

500
750
850

'V,BRICEX

DeVice Type

NPN
2N5882
2N6577
MJ15015
2N6578
MJ15001
MJ11018
2N6249
MJ11020
MJ11022
2N6250
2N6546
2N6676

PNP
2N58811
MJ15016

@ Ie

MiniMax

Amp

20/100

6

2k/20k

4
4

20170
2k/20k

MJ15002
MJ11017
MJ11019
MJ11021

2N62~1

2N6677
2N6547
2N6678
MJ13090
MJ13091
MJ16010
MJ16012
2N6836
MJ16010A
MJ12022
MJ4033
MJ4034
2N5629
MJ4035
2N5630
2N3773
2N5631
MJ15022
MJ15026
MJ15024
2N6257
2N3772
2N6282
2N5039
2N5303
2N6283
2N5038
2N6284
MJ15003
MJ13330
MJ13331
MJ10000
MJ 10004
MJ13332
MJ10001
MJ10005
MJ13100
MJ13333
MJ10008
MJ13101
MJ13334
MJ16014
MJ16016
2N6837
MJ10009
MJ13335
MJ10024
MJ10025

hFE

25/150
100 min

10/50
100 min
100 min
8/50
6/30
B min
6/50
8 mm
6/30
8 min
8 min

8 min
5 min
7

MJ4030
MJ4031
2N6029
MJ4032
2N6030
2N6609
2N6031
MJ15023
MJ15027
MJ15025

2N6285
2N5745
2N6286
2N6287
MJ15004

mm

10/30
50 mm
50 min
lkl
lkl
25/100
1 kl
20/80
15/60
15/60
15/60
6 mm
15/60
15/75
15/60
750/18k
201100
15/60
750/18k
201100
750/18K
25/150
8/40
8/40
40/400
40/400
10/60
40/400
40/400
8 min
10/60
30/300
8 mm

10/60
5 min
7 min
10/30
30/300
10/60

50/600
50/600

# I h lei @ 1 MHz

4
4
15
10
15
15
10
10
15
10
15
10
15
10
10
15
15
10
15
15
10
10
8
10
8
8
8
8
16
8
8
10
10
10
10
10
12
10
5
10
10
10
10
5
10
10
15
5
10
15
5
20
20
15

10
5
20
20

fT

Po (Case)

II
"s

@Ie

MHz

Walts

Max

Max

Amp

Min

@25OC

1
2

08
7

6
10

4
10-200#

160
120

2

7

10

35

1

10

1

10
10
15
10
15
10
15
10

1
10-200#
2
3#
2.5
3#
3#
2.5
61024
3
25
3
61024

180
120
200
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175

".

3.5
4
25
3.5
2.5
4
2.5
2.5
25
12 Iyp
091yp
30
30

0.7
05
1
05
07
05

0.5
05
021yp
015 typ

035
04
0.1 typ

3

10
10
10
10
10
10

10

150
150
1.2 typ

1.2 typ

8

1

200

121yp
11 typ
1.21yp

1.21yp
15 typ
12 typ

8
8
8

1
4
1
5
15
5
2

200

251yp
1.5
2
25 Iyp
15
25 Iyp

251yp
05
1
251yp
05
251yp

10
10
10
10
12
10

35
35
3
15

07
07
18
05
07
18
05
05

10
10
10
10
10
10
10
15
10
10
15
10
20
20
15
10
10
10
10

4#
60
2
4#
60
4#
2
51040
5 to 40

150

~

4
~

15
35
4
2
35

4
27
2.2
2.5
2
4
5
5

0.7
06
05
07

035
0.25
025
06
07
18
18

10#
10#
10#
10#
8#

15
8#

150
200
250
250
250
150

150
160

140
200
160
140
160

250
175
175
175
175
175
175
175
175
175
175
175
175
250

250
250
175
175
250
250
(continued)

1-37

TO-204AA (FORMERLY TO-3)/TO-204AE (Type) (continued)
Resistive Switching
VCEOtsusl

Amps Max

Volts Moo

25

60
80

2N5885
2N5886

100

2N6338

120

2N6339

140
150
40

2N6340
2N6341
2N3771
2N5301
2N5302
MJll012
2N6326
2N6327
MJll014
2N6328
MJ802
MJll016
MJ10022.
MJ10023.
2N5685.
MJ11028.
2N5686.

NPN

PNP

2N5883
2N5884
2N6436
2N6437
2N6438

30

60

80
90
100

40
50

120
350
400
60
80

.90
100
120

60

140
150
400
500
60
80
200
250

2N4398
2N4399
MJll0ll
2N6329
2N6330
MJ11013
2N6331
MJ4502
MJ11015

2N5683.
MJll029.
2N5684.
2N6377.
MJll031
2N6378.
2N6379.
MJll033.

MJll030
2N6274.
2N6275.
MJll032.
2N6276.
2N6277.
MJ10015.
MJ10016.
MJ14000.
MJ14002.
MJ10020.
MJ10021.

MJ14001.
MJ14003.

@ Ie

I'S

I'S

@Ie

MHz

Po (Case)
Watts

Min/Max

Amp

Max

Max

Amp

Moo

@250C

20/100
20/100
30/120
30/120
30/120
30/120
30/120
30/120
30/120
15/60
15/60
15/60

10
10
10
10
10
10
10
10
10
15
15
15
20
30
30
20
30
75
20
10
10
25
50
25
20
50
20
20
50
20
20.
40
40
50
50
15
15

1
1
1
1
1
1
1
1
1

0.8
0.8
025
0.25
025
0.25
0.25
0.25
025

10
10
10
10
10
10
10
10
10

2
2

1
1

10
10

4
4
40
40
40
40
40
40
40
2
2
2

200
200
200
200
200
200
200
200
200
150
200
200
200
200
200
200
200
200
200
250
250
300
300
300
250
300
250
250
300
250
250
250
250
300
300
250
250

1k min

6/30
6/30
1k min

6/30
25/100
1k min
50/600
50/600
15/60
400 moo
15/60
30/120
400 moo
30/120
30/120
400 mm
30/120
30/120
10 min
10 min
15/100
15/100

75 min
75 min

# Ihf.1

• MOdified TO-3, 60 mil pins

IT

hFE

Device Type

leGonl

Is

tf

4#
3
3
4#
3
2
4#
25
25
05 typ

09
09
03 typ

20
20
25

2

05 typ
08

03 typ
0.25

25
20

2
30

0.8
08

025
025

20
20

30
30

08
0.8
25
25

025
025
10
10

20
20
20
20

30
30

35
35

as

30
30

05

@ lMHz

TO-205AA (TO-5) Package

U
2

1

0

0

ST~~~~
3

2.

3.

EMITTER
BASE
COLLECTOR

Resistive SWitching
IcConl
Amps

VCEOlsus)

Max

Min

3

40

Volts

60
80

ps

If
ps

Amp

Max

Max

1
15
1
15
15

0404040404-

ts

Device Type

NPN

PNP

2N3719
2N3867
2N3720
2N3868
2N6303

hFE

@ Ie

Moo/Max
25/180
40/200
25/180
30/150
30/150

1-38

.

toff

fT

@ Ic

MHz

Po (Case)
Watts

Amp

Min

@ 25°C

1
15
1
15
15

60
60
60
60
60

6
6
6
6
6

TO-205AD (TO-39) Package
. CASE 79-02

2
STYLE 1·
PIN 1

EMITTER
BASE
COLLECTOR
(Pin 3 connected to case)

2

l~~)
ResIstive SWitching

IcCont
Amps Max

0.5

4
5

VCEOlsusl
Volts Min

200
300
400
60
60
80
100

Device Type
NPN

PNP

MJ4645
MJ4646
MJ4647
2N4877
2N5336
2N5337
2N5338
2N5339

MJ8100
2N6190
2N6191
2N6192
2N6193

MiniMax

Amp

Max

20 min
20 min

0.5
05
05
4
2
2
2
2
2

0.72"
0.72·
072"
15
1
2
2
2
2

1-39

Po (Case)
Watts

Max

Amp

Min

@2SoC

40
40
30

05
015
02
02
02
02

005
0.05
005
4
2
2
2
2
2

5
5
5
10
10

!IS

@ Ie

tou

IT
MHz

tf

~s

hFE

20 min
20/100
25/180
30/120
60/240
30/120
60/240

@Ie

t.

4
30
30
30
30
30

6
6
10

6

TO-210AA (TO-59) Package
CASE 160-03

STYLE 1:
PIN 1

2.
3.

EMITTER
BASE
COLLECTOR

Resistive Switching
IC Con !
Amps Max

VCEOlsusl
Volts Min

7

60
80
100

10

80
100

Device Type
NPN

PNP
MJ6700

2N5346'
2N5347
2N5348
2N5349·
2N6186
2N6187
2N6188
2N6189

hFE
MinIMax

@ Ie
Amp

25/180
30/120
60/240
30/120
60/240
30/120
60/240
30/120
60/240

2
2
2
2
2
2
2
2
2

1-40

ts

tf

~s

~s

Max
1
2
2
2
2
2
2
2
2

Max
0.15
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2

MHz
Min

Po (Case)
Watts
@25OC

30
30
30
30
30
30
30
30
30

60
60
60
60
60
60
60
60
60

IT
@Ie
Amp
2
2
2
2
·2
2
2
2
2

T0213AA (TO-66) Package
CASE 80-02

(D
o

0

STYLE 1.
PIN 1

2
CASE

'

'0

0

BASE
EMITTER
COLLECTOR
Resistive SWitching

IcConl

VCEO(susl

Amps Max

Volls Min

1

40
60
80
175
225
250
300

2

125
150
200
225
250
300

DeVIce Type
NPN

2N4912
2N3583
2N3738
2N3739
2N5050
2N5051
2N5052
2N3584
2N3585
2N4240

3
4

350
140
60

80

7

40
60
80
225
275
325
60
80
100

8

10

250
275
60
80
120
150
80

2N6211
2N6421
2N6212
2N6422
2N6423
2N6213

2N3441
2N3054,A
2N3766
2N6294

5

PNP

2N4898
2N4899
2N4900
2N6420
2N6424
2N5344
2N6425
2N5345

2N3767
2N6295
2N4231A
2N4232A
2N4233A
2N6233
2N6234
2N6235
2N6315
2N5427
2N5428
2N6316
2N5429
2N5430
2N6078
2N6077
2N6300
2N6301
MJ3247
MJ3248
2N6495

2N3740,A
2N6049
2N6296
2N3741,A
2N6297
2N6312
2N6313
2N6314

2N6317
2N6318

2N6298
2N6299
MJ3237
MJ3238

Is

tt

~s

~s

@ Ie

MHz

Po (Case)
Watts

IT

hFE

@ Ie

MiniMax

Amp

Max

Max

Amp

Min

@25OC

20/100
20/100
20/100
40/200
40/200
25/100
40/200
25/100
25/100
25/100
25/100
10/100
25/100
10/100
25/100
30/150
10/100
25/100
30/100
25/100
40/160
750/18k
30/100
40/160
750/18k
25/100
25/100
25/100
25/125
25/125
25/125
20/100
30/120
60/240
20/100
30/120
60/240
12/70
12170
750/18k
750/18k
40 min

05
0.5
05
0.5
01
05
0.1
0.5
0.75
0.75
0.75
1
1
1
1
075
1
05
025
05
0.5
2
0.25
0.5
2
1.5
1.5
1.5
1
1
1
2.5
2
2
25
2
2
1.2
12
4
4
3
3
10

061vo
0.61YO
061yO
21yO
3 lyO
0.6
31yp
0.6
3.5
35
35
25
4
25
4
6
25

0.31YO
031yo
031yO
0231yO
031yO
0.1
031yp
01
1.2
1.2
1.2
0.6
3
06
3
3
0.6

0.5
0.5
05
0.5
01
0.5
01
05
0.75
0.75
0.75
1
1
1
1
0.75
1

1.31yp
1 Iyp
091yp
0.91YO
131yp
0.91yp
0.91YO
051yO
0.51yO
0.51yO
35
3.5
35
1
2
2
1
2
2
2.8
2.8
1.5 typo
1.51YO
041yO
0.41YO
0.151yp

0271yp
031yp
0.091yp
0.71yO
0.271YO
0091yp
0.71yO
0.21yO
0.21YO
0.21YO
0.5
0.5
05'
08
02
02
0.8
0.2
0.2
0.3
03.
1.5Iyp.
1.5 tyfl.
0181yO
0.181yO
0.051yp

0.25
0.5
0.5
2
0.25
05
2
1.5
15
15
1
1
1
2.5
2
2
2.5
2
2
12
1.2
4
4
5
5
10

3
3
3
10
10
60
10
60
10
10
10
20
10
20
10
15
20
0.2
4
3
10
4#
4
10
4
4
4
4
20
20
20
4
3D

25
25
25
35
20
40
20
40
40
40
40
35
35
35
35
35
35
25
25
75
20
50
25
20
50
75
75
75
50
50
50

40 min
10/60

# Ih,el @ 1MHz

1-41

30
4
30
30
1
1

4#
4#
20
20
25

90
40
40
90
40
40
45
45
7S
75
75
75
70

TO-22SAA Package (Formerly TO-126)
CASE 77-04
PLASTIC

STYLE
PIN 1.
2.
3.
STYLE
PIN 1.
2.
3.

3
BASE
COLLECTOR
EMITTER

1
EMITTER
COLLECTOR
BASE
Resistive SWltchmg

leCant

VeEO(susi

Amps Max

Volts Min

0.3

250
350
150
200
250
300

0.5

1

1.5

2
3

4

350
40
60
80
40
60
80
300
400
100
30
40
60
80
40

60

80.

5

100
25·

• Case 77 (Style 3)

Device Type

PNP

NPN
MJE3440
MJE3439
MJE341
MJE344
2N5655
MJE340
2N5656
2N5657
2N4921
2N4922
2N4923
MJE720
MJE721
MJE722

MJE350

2N4918
2N4919
2N4920
MJE710
MJE711
MJE712

MJE1300~

MJEl3003e
MJE270
MJE520
MJE180
MJE181
MJE182
MJE3300e
2N5190
MJE521
2N6037
MJE3301.
2N5191
MJE800
MJE801
2N6038
MJE3302.
2N5192
MJE802
MJE803
2N6039
MJE243
MJE200

MJE271
MJE370
MJE170
MJEl71
MJE172
MJE3310e
2N5193
MJE371
2N6034
MJE3311.
2N5194
MJE700
MJE701
2N6035
MJE331~

2N5195
MJE702
MJE703
2N6036
MJE253
MJE210

ts

t,

@Ie

~s

~s

@Ie

IT
MHz

Po (Case)
Watts

MiniMax

Amp

Max

Max

Amp

Min

@25OC

40/160
40/160
25/200
30/300
30/250
30/240
30/250
30/250
20/100
20/100
20/100

002
0.02
005
005
01
005
01
0.1
05
05
05
1
1
1
1
1
012
1
01
01
01
1
15
1
2
1
15
15
2
2
1
15
15
2
2
02
2

15
15
208
20.8
20
208

hFE

8 min
8 min
8 min
5/25
5/25
1.Sk min

25

min

50/250
50/250
50/250
1k min
25/100
40 min
750/18k
1 k min
25/100
750 min
750 min
750/18k
1k min
25/100
750 min
750 min
750/18k
40/120
45/180

# Ih'el @ 1 MHz

1-42

35 typ

024 typ

01

15
15
15
15
10

35 tyO
351yp
06 typ
06 typ
06 typ

0.24 tyO
0.24 typ
03 typ
03 typ
03 typ

01
01
05
05
0.5

10
10
3
3
3

4
4

07
07

1
1

5
5
6

06 tyO
06 tyO
06 tyO

012 tyO
012 tyO
012 tyO

01
0.1
01

04 typ

04 typ

15

50
50
50
20
2

17 tyO

12 typ

2

04 typ

04 typ

15

17 typ

12 typ

2

04 Iyp

04 typ

15

17 tyO
12 tyO
07 tyO 008 typ
013 typ 0035 typ

2
02
2

25
20#
2
1#
1#
25
20#
2
1#
1#
25
40
65

2D
20
30
3D
3D
20
20
20
40
40
15
25
125
125
125
15
40
40
40
15
40
40
40
40
15
40
40
40
40
15
15

TO-225AB Package (Formerly TO-127)

P,4fJ
CASE 90-05

STYLE 2:
PIN 1.

2.
3.

EMITTER
COLLECTOR
BASE

ResIstIve SWltchmg

IcConl
Amps Max

VCEOlsusl
Volls Min
40
50

5

60
80

10

60
80
100
60

12

40

8

60
80
15

# Ihfel

40
60

DeVice Type

hFE

@ Ie

NPN

PNP

MiniMax

Amp

2N5977
MJE205
MJE1100
MJE1101
2N5978
MJE1102
MJE1103
2N5979
MJE6043
MJE6044
MJE6045
MJE2801
MJE3055
2N5989
2N5990
2N5991
MJE1660
MJE1661

2N5974
MJE105
MJE1090
MJE1091
2N5975
MJE1092
MJE1093
2N5976
MJE6040
MJE6041
MJE6042
MJE2901
MJE2955
2N5986
2N5987
2N5988
MJE1290
MJE1291

20/120
25/100
750 min
750 min
25/100
750 min
750 min
20/120
1k/20k
1k/20k
1k/20k
25/100
20170
20/120
20/120
20/120
20/100
20/100

25
2
3A
4A
25
3A
4A
25
4
4
4
3
4
6
6
6
5
5

IT

Is
ps

If
ps

@ Ie

MHz

Po (Case)
Watts

Max

Max

Amp

Min

@ 25°C

045 tyl'. 018 tyPo

25

2

055 Iyp 018 Iyp

25

2

045 Iyp 018 lyO
151yO 15 tyP_
151YO 151yp
151yO 151yp

25
4
4
4

2

75
65
70
70
75
70
70
75
75
75
75
90
90
100
100
100
90
90

1
1
1
1
4#
4#
4#

2
051yO
05 lyO
05 lyO

025 lyO
025 lyO
025 lyO

6
6
6

2

2
2
3
3

@ 1 MHz

CASE 152
1

~

~

ST~~~ ~
2.
3

EMITTER
BASE
COLLECTOR

(COLLECTOR CONNECTED TO TAB)
Resistive SWitching
IcConl
Amps Max
0.5
0.8
1

2

VCEOlsusl
Volts Min
65
300
40
120
180

30
40
60
80
100

hFE

@Ie

Is
ps

MiniMax

Amp

Max

10 min
30 min
30 min
40 min
40 min
50 min
50 min

0.1
0.030
0.5
0.010
0.010
1
1
1
0.25
0.25
0.25

DeVice Type
NPN
MPS-U31
MPS-U10
MPS-U02
MPS-U03
MPS-U04
MPS-U01
MPS-U01A
MPS-U45
MPS-U05
MPS-U06
MPS-U07

PNP
MPS-U60
MPS-U52

MPS-U51
MPS-U51A
MPS-U95
MPS-U55
MPS-U56
MPS-U57

4k

min

60 min
60 min
30 min

1-43

If
ps

@ Ie

MHz

Po (Case)
Watts

Max

Amp

Min

@ 25°C

60
150
100
100
50
50
100
50
50
50

10
10
10
10
10
10
10
10
10
10
10

IT

TO·202AC Package

.,

CASE 306-04

23

STYLE 1:
PIN 1.
2.
3.
4.

STYLE 3:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

EMITTER
BASE.
COLLECTOR
COLLECTOR
Reslslive SWllching

IcConl
Amps Max

VCEOCsus)
Volts Min

0.1

250
300

0.5

30
40
120
150
180
200
225
250
300

Device Type
NPN

PNP

040Nl
040N2
040N3
04ON4
D40Cl
040C2
040C4
040C5
040Pl
2N6591
040P3
2N6592
040P5
2N6557
MOS20
2N6593
2N6558
MOS60

1

350
30
45
60
75

80

2

100
30
40
50

3

t

60
80
.40
80

MOS21
2N6559
04001
04002
04004
04005
2N6551
04007
04008
040010
040011
040013
040014
2N6552
2N6553
D40El
040Kl
04OK3
2N6548
2N6549
D40K2
0"OK4
D40E5
040E7
MOS26t
MOS27t

04101
04102
04104
04105
2N6554
04107
04108
041010
041011
041013
041014
2N6555
2N6556
041El
041Kl
041K3
041K2
041K4
041E5
041E7
MOS76t
MOS77t

hFE
MiniMax

@ Ie

Is
).= 0.2

'00<12<500",
t3 < 15 os

--

IT @VCC - 30 Vdc
~

IT @Vec - 10 Vdc

-.

o. 1

r--

Id@VSEloff) = 0

OUTY CYCLE ~ 2.0%
APPROX 9.0 V
12

0.05

I---

0.03

TURN-OFF PULSE

0.04 0.06

0_'

0.2

0.4

0.6

1.0

IC, COLLECTOR CURRENT lAMP)

1-59

2.0

4.0

2N3054,A

FIGURE 4 - THERMAL RESPONSE
1.0
~

0.1 ~D=0.5
O.5

Cii

z

-

~w O. 31--0 12

...

'"

~~ 0.2

~~
~~

~ ~ ;;::::F-

0.1

o. 1l==0.05

P(pk)
BJC(t) = r(t) BJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

ffi~ 0.07 F=--0.2

!:::! ffi 0.05
-'",

~ ... 0.03
~

0.02

,I--""

0.0 1
0.01

'" r--

r"-O.OI

II

~rrmrE

0.02 0.03

0.05

TJ(pk) - TC' P(pk) BJC(I)

0.2

0.1

0.3

0.5

1.0

11111
10

2.0 3.0
5.0
t. TIME or PULSE WIDTH

20

fJUl
1:r-j
12

30

50

II II

100

DUTY
CYCLE.
0 = 11/12

200 300

500

1000

(m~

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA

~

~

~_

0
.0
.0

5.0!"s~ ~1.0 ms"s;.0.5;'
2N3054A

,

TJ - 200°C

.0
2. 0

.....

13
:3

I'

1-0
t; o. 7

~

sistor that must be observed for reliable operation; i.e., the transistor
must not be subiected to greater dissipation than the curves indicate.

1\ \

The data of Figure 5 is based on T J(pk) = 2000 C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) < 200°C. T J(pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

Curves Apply Below Rated VCEa

:: o. 5

8

There are two limitations on the power handling ability of a
transistor. average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran·

2N3054

3

d~~

SECONO BREAKDOWN LIMITED
o.Hf- - - - - BONOINGWIRE LIMITED
o. 21-- - - - - - THERMAL L1MITATION@ TC - 250C
O. 1
2.0

1 1

5.0

3.0

7.0

1

10

1
20

30

40 50 60

VCE. eOLLECTOR·EMITIER VOLTAGE (VOLTS)

FIGURE 6 - TURN-OFF TIME
3.0
2.0

i=

0.2

'"

200

~
w
'"z
«

@VCC=30Vdc

O. sFO.3

Icils = 10
ITJ=250C

-:J r-.

I,

1.0

w

FIGURE 7 - CAPACITANCE
300

I lSI = IS2

If

,/

...
U

r-....

\

~

If@Vce= 10 Vdc

100

T~ = ~50b

--

~

r-

I'
Cib

0

U

O. 1

"""-

0

Cob
0.05
0.03
0.04

0.06

0.1

0.2

0.4

0.6

1.0

2.0

30
0.1

4.0

IC. COLLECTOR CURRENT (AMP)

0.2 0.3

0.5

1.0

2.0 3.0 5.0

10

20

VR. REVERSE VOLTAGE (VOLTS)

1-60

50

100

2N3054,A

FIGURE 9 - COLLECTOR SATURATION REGION

FIGURE 8 - DC CURRENT GAIN
_ 1.0

300

IJ

ffi

-

70

~ 50

1'l
'-'

'"

~

30

I--"""'

10
0.004

0.01

0.02

0.04

~

"'

0.1

"

1.0

\
\

~....
8

1"\

2.0

~

0.4

a:

'"

I"'

r-....
0.4

0.6

~

l"\'

.........
0.2

0.2

\

-t-

\.

:;;

1.0

5.0

2.0

10

~

ffi

+1.0

~

+0. 5

~

...

-0. 5

I-~

-2.0

~

-2. 5
0.004

>

0.01

0.02

0.04

'"
«
~ 0.4
>0.2

0.2

o
1.0

0.4

-

VCE(sa'I@IC/IS= 10

III

0.1

V

>

-55 '0 150°C

1111

I

w

IJ..J.I)-/

mft.°R~

V
V

~ 0.6

V

III

~ -1. 5

1000

~BE(sa'll@ IJ/I~ = 10 r-

~

III./'"

=>
~ -1.0

500

200

I

II

0.8

1trD250C- f--

8

IITJ=25 0C

III

'0 l~ooh

25°C

100

FIGURE 11 - "ON" VOLTAGES

III
'eVC FO R VCE(sa'l

.§ +1.5

50

20

lB. SASE CURRENT (mAl

1.0

'APPLIES FOR IC/IB:5 hFE/2

Ul

0

4.0

FIGURE 10 - TEMPERATURE COEFFICIENTS

~ +2.0
>

TJ = 25°C

W

Ic. COLLECTOR CURRENT (AMPI

+2. 5

3.0A

::

f",.

~
I

III

I
1.0 A

500mA

;'"

'I'-

25°C

20

III

I
Ic=100mA

'">
~ 0.8

..........

I

~ 100

to

~

VCE = 4.0 Vdc-

TJ = 150°C
200

2.0

0.004

4.0

0.01

0.02

IC. COLLECTOR CURRENT (AMPI

0.1

0.04

0.2

/'
1.0

0.4

I

2.0

4.0

IC. COLLECTOR CURRENT (AMPI

FIGURE 12 - COLLECTOR CUT-OFF REGION

FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE

10 3

tii 107

~

/

-VCE 30 V

w

~ 106

- T J = 150°C
1I'

===

~

~

=

-VCE =30Vdc

IC= 10ICES-

........
l""-,

.........

5

FORWARD=

=

:;; 104

~

'" , L

-0.1

+0.1

+0.2

IC ~ICES

"""

IC = 21CES

-

."{ .........

==TYPICAL ICES
_VALUES OBTAINED
=FROM FIGURE 12

~

.......

.......

........
........

........

ICES
-0.2

""'-

10

=250C

-0.3

.......

::

f=1000C

1 =""REVERSE

10-3
-0.4

.....

9

/

2

+0.3

+0.4

~

+0.5 +0.6

a:

102

0

20

40

60

BO

1110

120

140

TJ. JUNCTION TEMPERATURE (OCI

VBE. BASE·EMITTER VOLTAGE (VOLTSI

1-61

160

180

200

PHP

"PH

®

MJ2955

2H3055

COMPLEMENTARY SILICON POWER TRANSISTORS

15 AMPERE
POWER TRANSISTORS
COMPLUIIENTARY SILICON

· .. designed for general-purpose switching and amplifier applications.
•

MOTOROLA

60 VOLTS
115 WATTS

OCCurrent Gain -hFE= 20-70@IC=4Adc

• Collector-Emitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
•

Excellent Safe Operating Area

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VeEO

60

Vdc

Collector-Emitter Voltage

VeER

70

Vdc

Collector-Base Voltage

Ves

100

Vdc

Emitter-Base Voltage

VES

7

Vdc

Collector Current - Continuous

Ie

15

Adc

Base Current

IS

7

Adc

Total Power Dissipation

@

Po

TC "" 2SoC

Derate above 25°C
Operating and Storage Junction
Temperature Range

115
0.657

·TJ. T stg

65 to +200

Watts
w/oe
°e

Lr~
r~K
ESEATIN(~

I

PLANE

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

NOTE:
1. DIM "0" IS OIA.

FIGURE 1 -POWER DERATING

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

160

-

DIM

i'-..

A
B

~

C
0
E

~

-...........
0

f'....

F
G

.......

0

H

J'.."

J

~

0
25

50

75

100

125

150

175

200

TC. CASE TEMPERATURE lOCI

K
Q

R

MILLIMETERS
MAX
MIN

-

39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67 11.18 0.420
5.59 0.210
5.33
16.64 17.15 0.655
11.18 12.19 0.440
4.09 0.151
3.84
26.67
Collector connected I, case.
CASE 11·01
6.35
0.99

(TO·31

1-62

INCHES
MIN
MAX

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

2N3055 NPN/MJ2955 PNP

ELECTRICAL CHARACTERISTICS

I

1Tc ~ 2SoC unless othe,wi.e noted)

Symbol

Min

Max

Unit

VCEO(sus)

60

-

Vde

VCER(sus)

70

-

Vde

Collector Cutoff Current
(VCE = 30 Vde, IS = 0)

)CEO

-

0.7

mAde

Collector Cutoff Current

ICEX

-

1.0
5.0

-

5.0

20
5.0

70

-

1.1
3.0

-

1.5

2.5

-

15

120

10

-

Characteristic

·OFF CHARACTERISTICS

Collector-Emitter Sustaming Voltage III
(lc

~

200 mAde, IS

= 0)

Collector-Emitter Sustaining Voltage (1)
(lC = 200 mAde, RSE = 100 Ohm.)

(VCE
(VCE

= 100 Vde, VSE(off) = 1.5 Vde)
= 100 Vde, VSE(off) = 1.5 Vdc, TC = 150°C)

Emitter Cutoff Current
(VSE

= 7.0

IESO

mAde

mAde

Vde, IC = 0)

·ON CHARACTERISTICS (1)
DC CUrrent Gain
(lC = 4.0 Ade, VCE = 4.0 Vde)
(lC = 10 Ade, VCE = 4.0 Vdcl

Collector-Emitter Saturation Voltage
(lC = 4.0 Adc, IS = 400 mAde)
(lC = 10 Ade, IS = 3.3 Adc)

VCE(s.t)

Base-Emitter On Voltage

VSE(on)

(lC

= 4.0 Adc,

VCE

= 4.0

-

hFE

Vdc

Vdc

Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased
(VeE = 40 Vdc, t::: 1.05; Nonrepet,tive)
DYNAMIC CHARACTERISTICS
Current Gam - Bandwidth Product

(lC

= 0.5 Ade,

VCE

·Small-Signal Current Gain
(lC

= 1.0 Ade,

VCE

= 4.0

it

= 4.0

Vde, IC

= 1.0

-

hfe
Vdc, f

= 1.0 kHz)

*Small-Signal Current Gain Cutoff Frequency

(VCE

MHz

fT

= 10 Vdc, f = 1.0 MHz)

Ade, f

fhfe

kHz

= 1.0 kHz)

Indicates Wlth,n JEOEC Registration. (2N3055)

(1) Pulse Test: Pulse Width'; 3001", Duty Cycle'; 2.0%.

FIGURE 2 -

ACTIVE REGION SAFE OPERATING AREA

2N3065, MJ2955

20

-I'-.

10

"'-"-.! 00"S~50"s\SO'"

There are two limitations on the povver handling ability of a
transIstor. average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate .
The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable

dc- r-- 1ms

0::

- --" "."-'"

~
I-

!a

......

'. l"
"'-

'"c

B

~

0.6

~

0.4

t:"- - =
- r---- --

-

C--

i

I I

depending on power level. Second' breakdown pulse limits are
valid for duty cycles to 10% but must be derated for temperature
according to Figure 1.

== ~

Bonding Wire Limit
.
Thermally Limited@Tc=250C(SmglePulsel- e---

S""ond B'j"kdown ,imit

I

I -e---

10
20
40
VCE, COLLECTOR·EMITIER VOLTAGE (VOL TSI

60

1-63

2N3055 NPN/MJ2955 PNP

PNP

NPN
2N3055

MJ2955
FIGURE 3 - DC CURRENT GAIN

500

-

200

VCEz4.oV

300 I---- TJ =150°C
200

J

;;:

z

25 C

'"....

100
10 ~ ~ -55°C
50

~...,

::>

...,

t--

z

~

....
'"

""'1

Q

:#

~

20
10
1.0
5.0
0.1

0.2

0.3

0.5 0.1

2.0

1.0

3.0

I
Q

30

:#

20

...,

5.0 1.0

J.

100 t-- _~-;:c r-

;;: 10

30

--!-+..

r-." I
TJ

I

II
= 150°C

I---- _-55°C

50

........

r-.

10
01

10

VCe=4.0 V

0.2

0.3

0.5 0.1

IC. COLLECTOR CURRENT lAMP)

1.0

2.0

,,~

3.0

5.0 1.0 10

IC. COLLECTOR CURRENT lAMP)

FIGURE 4 - COLLECTOR SATURATION REGION

~ 2. 0
2:

If II

1.6

w

~

4.0 A

IC· 1.0 A

~ 2.0

~.15~

11111

Q

> 1. 2

t. 2

~

'"w

::
i

\

O. S

~

\

o

E
~ o. 4
8

0
5.0

\

o

_ 0.4

I-

~

50

20

100

200

500

1000

2000

0

5.0

5000

I-

\

8
>

10

r-o. S

g

~

1\
"-

......,

:>

TJ = 25°C

S.O A

~
o

o

l:::E

4.0A

1.6

w

'"

S.OA

11111

IC·1.0A

2:

~

ffi

II

o

50

20

10

lB. BASE CURRENT (mA)

100

200

500

1000

2000

5000

IS. BASE CURRENT (mA)

FIGURE 5 - "ON" VOL TAGES

1.4
1. 2

I

2.0

I

1.6

I
I

~1. 0

i,...-

VBElsa,,1I! lellB = 10

~ 0.8

::;;;.

2

t-- t---

w

'"~

D.6

o
f-- I->
>' O.4

VSj II!VfE

I I

01

i 4·r r

VBElsatl.lellB =10
I

I

I _I

II

i--~

VCE(sat)II!ICIIB' 10

V

r111

0.3

0.5 0.1

1.0

2.0

3.0

~ J.-

II

0.4

VeElsat) Ii> lellB =10
5.0 7.0

0.1

10

IC. COLLECTOR CURRENT IAMPERES)

V

J...I.-

o
0.2

V

I I

VBE @ VCF : 14~ VI

8

o
0.1

TJ= 25°C

TJ - 250 e

0.2

0.3

0.5

1.0

2.0

3.0

IC. COLLECTOR CURRENT lAMP)

1-64

5.0

10

®

NPN
2N3055A · IJ15015
PNP
MJ2955A . IJ15016

MOTOROLA

COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS

15 AMPERE

COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. PowerBase complementary transistors designed for high power
audio, stepping motor and other linear applications. These devices
can also be used in power switching circuits such as relay or solenoid
drivers, dc-to-dc converters, inverters, or for inductive loads requiring
higher safe operating area than the 2N3055 and MJ2955.
•

Current-Gain - Bandwidth-Product
fT = 0.8 MHz (Min) - NPN
= 2.2 MHz (Min) - PNP

•

Safe Operating Area - Rated to 60 Vand
120 V, Respectively

@

60,120 VOLTS
115,180 WATTS

IC = 1.0 Adc

*MAXIMUM RATINGS
Symbol

2N3055A
MJ2955A

MJ15015
MJ15016

Unit

Collector-Emitter Voltage

VCEO

60

120

Vdc

Collector-Base Voltage

VCBO

100

200

Vdc

Collector-Emitter Voltage Base
Reversed Biased

VCEV

100

200

Vdc

Emitter-Base Voltage

Rating

VEBO

7.0

Vdc

Collector Current - Continuous

IC

15

Adc

Base Current
Total Device Dissipation@ TC "" 2SoC
Derate above 2SoC
Operating and Storage Junction

IB

7.0

Adc

Po

115
0.65

Watts

180
1.03

W/oC

-65 to +200

TJ, T stg

t.

SEATING PLANE

°c

Q

Temperature Range

THERMAL CHARACTERISTICS

I

Characteristic
Thermal Resistance, Junction to Case

Symbol

I

Max

I

I

Max

1.52

eJC

0.98

Unit
°CIW

STYLE 1:
PIN 1. BASE
2. EMITTER

"Indicates JEDEC Registered Data 12N3055A)

CASE COLLECTOR
NOTES
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
2. 001 02 OBSOLETE, NEW STANDARD 011·01 •
3. ooHI1 OBSOLETE, NEW STANDARD 001-03.
4. DIAMETER V AND SURFACEWARE DATUMS.
5. POSI
FOR HOLE Q:

FIGURE 1 - POWER DERATING
_ 2PO
~

z

'"
;::

::
~

150

---- "-

Q

'"~

~
w

~

100

I'--..

'"
g

>
«

•

"-

"-

.............. I'-..

2N3055A ......
MJ2955A

50

:>

I

:!
c

MJ15015
MJ1501S

"-

............

"-

............ ~

.......

"-

0
0

25

75
100
50
125
TC, CASE TEMPERATURE IOC)

150

~

175

1-65

200

CASE 1-04
TO-204AA

..

NPN 2N3055A, MJ15015
PNP MJ2955A, MJ15016

OJ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted).

I

Characteristic

Symbol

Min

Max

Unit
Vdc

OFF CHARACTERISTICS (1)

*Collector-Emitter Sustaining Voltage
(lC = 200 mAde, IB = 0)

2N3055A, MJ2955A
MJ15015, MJ15016

Collector Cutoff Current

60

-

120

-

-

0.7
0.1

-

5.0
1.0

mAde

30
6.0

mAde

-

5.0
0.2

'mAde

mAde

ICEO

(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)

*Collec1or Cutoff Current
(VCEV = Rated Vafue, VBE(off)
(VCEV = Rated Value, VBE(off)
TC = 150oC)

2N3055A, MJ2955A
MJ15015, MJ15016
2N3055A, MJ2955A
MJ15015, MJ15016

ICEV

= 1.5 Vde)

2N3055A, MJ2955A
MJ15015, MJ15016

ICEV

= 1.5 Vdc,

2N3055A, MJ2955A
MJ15015, MJ15016

lEBO

Collector Cutoff Current

*Emitter Cutoff Current
(VEB

VCEO(sus)

= 7.0 Vdc, IC = 0)

-

'SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased
(t

=0.5 s non-repetitive)
(VCE = 60 Vdc)

2N3055A, MJ2955A
MJ15015, MJ15016

'ON CHARACTERISTICS (1)

DC Current Gain
(iC
(lc
(lc

Collector-Emitter Saturation Voltage
(lc
(lc
(lC

10
20
5.0

70
70

-

Vdc

VCE(sat)

= 4.0 Adc, IB =400 mAde)
= 10 Adc, IB =3.3 Ade)
= 15 Adc, IS = 7.0 Ade)

Base-Emitter On Voltage
(lC

-

hFE

= 4.0 Adc, VCE = 2.0 Vdc)
= 4.0 Ade, VCE = 4.0 Vdc)
= 10 Ade, VCE = 4.0 Vdc)

-

1.1
3.0
5.0

VSE(on)

0.7

1.8

Vdc

fT

0.8
2.2

6.0
18

MHz

Cob

60

600

pF

td

0.5

IlS

4.0

IlS

ts

-

3.0

IlS

tf

-

6.0

IlS

= 4.0 Ade, VCE = 4.0 Vdc)

"DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 1.0 Adc, VCE = 4.0 Vde, f

= 1.0 MHz)

2N3055A, MJ15015
MJ2955A, MJ15016

Output Capacitance
(VCS

= 10 Vdc, IE = 0, f = 1.0 MHz)

'SWITCHING CHARACTERISTICS (2N3055A only)
RESISTIVE LOAD

Delay Time
Rise Time
Storage Time

(VCC = 30 Vdc, IC = 4.0 Adc,
IS 1 = IS2 = 0.4 Adc,
tp = 25 IlS Duty Cycle'; 2%)

tr

Fall Time
(1) Pulse Test: Pulse Width = 300 IlS, Duty Cycle'; 2%.
"Indicates JEDEC Registered Data (2N3055A)

1-66

NPN 2N3055A, MJ15015
PNP MJ2955A, MJ15016

--r-.

100
70
z
< 50

z

30

"''"
'"
13

ZO

'"'c

10

j

..........

......
f'

'"

1.6

~

\

't;"
c

TTT
TJ = 260

j
'"W'
>'"'

10

0.5 0.7

IC'I A

15

I......

.......

0
0.005 0.01

0.02

"'

2

~
~

"

I I
t-- TC' 25°C

2. 5

..,.....

J

5.0

f

.j

b
~

~

1. 6

I
0.5

o

0.2

V
VBEI..t) "leila '10

VC~I..t/@lI~/I~ ~ Ih
0.3

0.5

...... 1--'"

0.5

2.0

'i'

z

~

<
~

co

VBElo.) @I VCE' 4 V ~

1.0

"

-

MJ2955A

%

,,:

0.2

10

t;

g

~

~g

0.1

FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT

FIGURE 4 - "ON" VOLTAGES

~c

0.05

lB. BASE CURRENT lAMP)

IC. COLLECTOR CURRENT lAMP)

3. 5

.... -

\
\.

b

8A

4A

1.2
O.B

c 0.4

"\'
0.3

2

>

7

2
0.2

"'co
~
c
1="'

VCE·4.0V

2.8

~ 2.4

25°!:'
~50C

co

0-

~c

TJ -150°C

I-..

III

FIGURE 3 - COLLECTOR SATURATION REGION

FIGURE 2 - DC CURRENT GAIN
ZOO

I---

JI50

t

--

2N3055A
MJI5015

13

0.7

10

20

0.1

0.2
0.3
0.5
IC. COLLECTOR CURRENT lAMPS)

IC. COLLECTOR CURRENT lAMP)

1.0

2.0

FIGURE 7 - TURN-ON TIME

FIGURE 6 - SWITCHING TIMES TEST CIRCUIT
(Circuit shown is for NPN)

0

Vee

7~VCC'30V

+30V

5 r=lella • 10
f- TJ - 25°C
3

7.5

n
Scope

j

"'

:E

;::

~

2
t~

I

l- t-

" O. 7
O. 5
O.3

10 ns
Duty Cycle = 1.0%

t r • tf or;;:

O.2
td

-5 V

o. I

1-67

0.2

0.3

0.5 0.7
I
IC. j:OLLECTOR CURRENT (AMP)

10

16

NPN 2N3055A, MJ15015
PNP MJ2955A, MJ15016

1111

FIGURE 9 - CAPACITANCES

FIGURE 8 - TURN-oFF TIMES
400

10
7
&

,..,..,

Is

2

-f-' MJ2955A
MJI5016

.....

~

100

U

::
;3

7;:::Vec=30

..;

o.&~lclIB=18
~IB1'IB2

o.3 r TJ'250C
O.2
O. 1
0.2 0.3

Cib

'z"'

:> ~

TJ = 25 0 C
2N3055A
MJI5015

-I-

JII

w

tl

1 ......

~

.,;

11

III

~.

1'. r--~~
200
t- r-~

50

........

I

10

0.5 0.7
Ic. COLLECTOR CURRENT (AMPS)

Cob

30
20

15

1.0

2.0

5.0

COLLECTOR CUT-OFF REGION

NPN

500

50
100 200
10
20
VR. REVERSE VOLTA.GE IVOLTS)

1000

PNP
FIGURE 11 - MJ2955A, MJ15016

FIGURE 10 - 2N3065A. MJ15015
Vee-3D V

1...

..'"
z

...'":::>

'"
~...
c...

~

1000

...

iii

100

~

10
1.0
0.1

-

~

l000C

--

0.01
+0.2

TJ -1500C

10

aa: 1.0

'- TJ -IS00C

~ 100 0 e

8 0.1 == REVERSE.... fii'"'~FORWARO
!J
0.01 = 1= 25 C
~

IC = ICES
REVERSE_

r-- =

FORWARO

IC=ICES

0

-r 25OC
+0.1

-0.2

-0.3

0.001
-0.2

-0.5

-0.4

-0.1

I

I-

...

~

-.~ ~.'I;:

~."" ~

1',

10

.....

....

'":::>

...'"
'"

' ...

........

21- _ _ _ Bonding Wire limit

p

1

Ilmitationa on the _

a'"

I

+0.5

"

~-+----II--+-+=""-"~r--t--t-H1.0 ma

. . . . t--.,

2.0~-+----I1--+--t--t---'~""':t-t-t----j

c

~ 1.o~~~~~~~~~~~~~~~~lo~~m~.
t=r- - .--~

de

• - - - - Thermal limit • TC• 250 C (Single Pulse)
Second Brukdown Limit
I I
60
10
20
VCE. COLLECTOR·El!ITTER VOLTAGE (VOLTS)

There .,. _

5.0

~

lms-

..... I
'l-r II
['

+0.4

li:lO~~~
~
5

-,100m,

C.......

,

+0.3

I-o....
~,,::'":.-"'
_,--+~""1----+-il:,~.-+-t--t-'0.11111

~ 3or'
100",

5

~
8

...

+0.2

FIGURE 13 - FORWARO BIAS SAFE OPERATING AREA
MJ15015. MJ15016

FIGURE 12 - FORWARO BIAS SAFE OPERATING AREA
2N306&A. MJ29&5A

20

+0.1

VBE. BASE·EMITTER VOLTAGE IVOLTS)

VeE. BASE·EMITIER VOLTAGE IVOLTS)

0.5

Bonding Wire Limit

Thermal LimH IP Te - 250 C ISingl. Pulse)

r- - - 1 - - See~nd Breakdown Limit

0.215

100

20

3D

de _

.,,',

60

100 120

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

handling IIbIlIty of • tr...iator:

--.elunclion temp8rlllUte IIIId _ _ • Sal. ()periling.,..
__ i_.Ic,vCE Omila 01 the trln_ thlll mU81 be obeetved for
rellHI. ~lIIian; i.... the tr_iator mU81 nOl be subjected to II'H*

diloiplllion then the curws indicllle.
The data of Figu,.. 12 and 13 is baaed on Te = 25'C; TJ/pt) is variable
,,-ndlngon power 1evoI. Secondbrel,",-,pul.olimila ... volidforduty
cycl.. to 10% but mU81 be derated for temperlllute _ n g 10 Figure 1.

'·68

®

2N3441
MOTOROLA

III
3 AMPERES

NPN SILICON POWER TRANSISTOR

NPN SILICON
POWER TRANSISTOR

· .. 2N3441 transistor is designed for use in general·purpose switching
and linear amplifier applications requiring high breakdown voltages.
It is characterized for use as:

140 VOLTS
25 WATTS

•

Driver for High Power Outputs

•

Series and Shunt Regulators

•

Audio and Servo Amplifiers

•

Solenoid and Relay Drivers

•

Power Switching Circuits

r

MAXIMUM RATINGS

~

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCBO

140
160

Vdc

Emitter-Base Voltage

VEBO

7

Vdc

IC

3
2
25
0.142
-65 to +200

Adc

Collector Current - Continuous

Base Current - Continuous

Total Power Dissipation@Tc
Derate above 2SoC

IB

= 2SoC

Po

Operating and Storage Junction
Temperature Range

TJ. T stg

Vdc

Characteristic

-------

If
E

SEATING PLANE

---F--

Adc

Watts

w/oe

°e
S

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

\=:=

I

Symbol
ROJC

I

Max
7

I

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

Unit

°elW

MILLIMETERS
MIN
X
11.94 12.70
C 6.
8.64
0
0.71 O.BB
E 1.7 1.91
f 24.33 24.43
G 4.93 5.33.
H 2.41 2.67
J 14.48 14.99
K 9.14
- 1.7
Q
3.61
3.86
8.89
S
T
- 3.68
15.75
U

DIM
B

INCHES
MI
MAX
0.470 0.500
0.2 0 0.340
0.D21 0.034
LO.QliO 0.075
0.958 0.962
0.180 .210
0.095 0.105
0.570 0.580
0.360 - 0.050
0.142 .1 2
0.350
0.145
0.620

-

All JEOEC O i _....d lAd Not. Apply.
CASE80-D2

TO. .

1-69

2N3441

III

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Max

Symbol

Min

VCEO(sus)

140

Collector Cutoff Current
(VCE = 140 Ade, 18 = 0)

ICEO

-

100

Collector Cutoff Current

ICEX

-

5.0
6.0

Characteristic

Unit

OFF CHARACTERISTICS

Collector·Emitter Sustaining Voltage (1)
(lC = 100 mAde, 18 = 0)

(VCE
(VCE

= 140 Vde, V8E(off) = 1.5 V)
= 140 Vde, V8E(off) = 1.5 V@ 150°C)

mA
mA

-

Emitter Cutoff Current
(V8E = 7.0 Vde, IC = 0)

Vde

1.0

lEBO

mA

ON CHARACTERISTICS

DC Current Gain (1)

hFE

=0.5 Ade, VCE = 4.0 V)
(lc = 2.7 Ade, VCE = 4.0 V)
IIC

25
5.0

100

-

Coliector·Emitter Saturation Voltage (1)
(IC = 2.7 Ade, IB = 0.9 Adc)

VCE(,.t)

6.0

Vde

Base-Emitter On Voltage (1)
(lC = 2,7 Adc, V CE = 4.0 Vde)

VBE(on)

6.7'

Vde

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain

IIc

hie

15

Ihfe l

5.0

75

=0.5 Ade, VCE = 4.0 Vde, f test = 1 kHz)

Small-Signal Current Gain
IIc = 0.5 Ade, VCE = 4.0 Vde, f test = 0.4 MHz)

FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA

O~~~~~
R
, ~ 'Qq"".r~O~
.t:±
<.-;}::"~t: $00'- ""':r'---,.r!---='O~O-?).r

~U

~

iCmax(Pulnd)- '.,

3.0 Ie max (Continuous)

...

-9J

~

,~

1I""s

1'IIrI

'Qq'-HO",-

~

There are two limitations -on the power-handling ability
of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the
transistor that must be observed for reliable operation, i.e.,
the transistor must not be subject~d to greater dissipation
than the curves indicate.
The data of Figure 1 is based on T J(pk) = 2000 C; T C is
vanable depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.

"

11.0·~~~III~~:!o.~""~~~""'~-·~~~~bll""~m

§!'!:

...

~

O.5~

t--

Second Breakdown Limit - - -

0.2 t-- BondingWire limit
- •t- Thermal Limit Ii' TC=25°C - - I
I I I I III
I I
0.1 2.
20

03.0 ,5.0 7.0 10

~.

+--l--l-+""'H-r~~It--i

+-+-+++I+i--f,+

30 50 70 100 140

200

VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)

1·70

®

2N3442
2N4347

MOTOROLA

II.
5.0 AND 10 AMPERE

POWER TRANSISTORS
NPN SILICON

HIGH·POWER INDUSTRIAL TRANSISTORS

120, 140 VOLTS
100,117 WATTS

NPN silicon power transistors designed for applications in
industrial and commercial equipment including high fidelity audio
amplifiers, serres and shunt regulators and power SWitches.
•

Low Collector·Emltter Saturation Voltage -.
VCE(sat) = 1.0 Vdc (Max) @ Ie = 2.0 Adc - 2N4347

•

Collector·Emltter Sustaining Voltage VCEO(sus) = 120 Vdc (Mini - 2N4347
140 Vdc (Mini - 2N3442

•

Excellent Second·Breakdown Capability

L~'~1i
r~K

'MAXIMUM RATINGS
Rating

Symbol

2N4347

2N3442

Unit

120

140

Vdc

Collector-Base Voltage

Vceo
VCR

160

Vdc

Emitter-Base Voltage

VFR

Collector-Emitter Voltage

Collector Current - Continuous

140

Ie

5.0
10

10
15"

Adc

Base Current - ContInuous
Peak

16

3.0
8.0

7.0

Adc

Total Power DISSipation @TC - 25°C

PD

100
0.57

117
0.67

Derate above 25°C
Operating and Storage Junction

-

-65 to +200

TJ. T stg

PLANE

Vdc

7.0

Peak

E SEATINi-L

Watts
wloe
STYLE I:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

°e

Temperature Range

DIM
A
B

THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Case

Svmbol

2N4347

2N3442

Unit

ReJC

1.75

1.5

°elw

"'Indicates JEDEC Registered Data.

C
D
E
F

G
H
J
K

""This data guranteed In addition to JEDEC registered data.

Q

R

MILLIMETERS
MIN MAX

-

-

39.37
21.08
7.62 0.250
l.D9 0.039
3.43
29.90
30.40 1.177
10.67
11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
3.84
4.09 0.151
26.67
Collector connected to case
CASE 11·01
6.35
0.99

(TO·3)

1-71

INCHES
MIN
MAX
1.550
0.830
0.3DO
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

I

2N3442, 2N4347

ELECTRICAL CHARACTERISTICS

(TC

c

25°C unle.. otherwise noted)

Symbol

Characteristic

Min

Max

120
140

-

-

200
200

-

2.0
5.0
10
30

-

5.0

15
10
20
7.5

60

-

-

1.0
2.0
5.0

-

2.0
3.0
5.7

200
80

-

40
12

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

2N4347
2N3442

Collector Cutoff Current
(VCE = 100 Vdc, IB = 0)
(VCE = 140 Vdc, 18 = 0)

Collector Cutoff CUrrent
(VCE = 125 Vdc, VBE(off)
(VCE = 140 Vde, VBE(off)
(VCE = 120 Vde, VBE(off)
(VCE = 140 Vde, VBE(off)

Vde

VCEO(sus)

(lc = 200 mAde, 18 = 0)

mAde

ICEO
2N4327
2N3422

mAde

ICEX

= 1.5 Vde)

2N4347
2N3442
2N4347
2N3442

= 1.5 Vdc)
= 1.5 Vdc, TC = 150°C)
= 1.5 Vde, TC = 150°C)

Emitter Cutoff Current
(V8E = 7.0 Vde, IC = 0)

-

mAde

lEBO
2N4347,2N3442

ON CHARACTERISTICS (1)
DC Current Gam

(lC
(lC
(lc
(lC

-

hFE

= 2.0 Adc, VCE = 4.0 Vde)
= 5.0 Adc, VCE = 4.0 Vdc)
= 3.0 Adc, VCE = 4.0 Vde)
= 10 Adc, VCE = 4.0 Vdc)

2N4347
2N4347
2N3442
2N3442

Collector-Emitter Saturation Voltage
(lC = 2.0 Ade, IB = 200 mAde)
(lC = 5.0 Adc, I.e = 0.63 Ade)
(lC = 10 Adc, 18 = 2.0 Ade)

70

Vdc

VCE(sat)
2N4347
2N4347
2N3442

Base-Emitter On Voltage

Vdc

VBE(on)

(lC = 2.0 Ade; VCE = 4.0 Vde)
(lC = 5.0 Ade, VCE = 4.0 Vdc)
(lc = 10 Ade, VCE = 4.0 Vdc)

2N4347
2N4347
2N3442

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 0.5 Ade, VCE = 4.0 Vde,
(lC = 2.0 Ade, VCE = 4.0 Vdc,

(2)
f test '= 50 kHz)
f test = 40 kHz)

kHz

fT
2N4347
2N3442

Small-Signal Current Gain
(lC = 0.5 Adc, VCE = 4.0 Vde, f = 1.0 kHz)
(lC = 2.0 Adc, VCE = 4.0 Vde, f = 1.0 kHz)

-

hfe
2N4347
2N3442

"'Indicates JEDEC Registered Data

NOTES: 1. Pulse Test: Pulse Width = 300 "S, Outy Cycle';; 2.0%.
2. fT = Ihfel • f test

FIGURE 1 - POWER DERATING

§

1.0

1""'-

N

:::;

i1

~

"-

0.8

i!;

.........

z

""

o

~ 0.6

1ii
Ci

1:1:

~

0.4

t'-..

""

~

~ 0.2

~'"

If! 0

o

- " 1---

ZS

.........

so

7S
100
lZS
TC. CASE TEMPERATURE (OC)

1-72

i"--

ISO

"17S

""

ZOO

72

2N3442, 2N4347

ID

ACTIVE REGION SAFE OPERATING AREA INFORMATION

FIGURE 2 - 2N3442
20

;;:

10

"

70
50

5

0-

z

50jJ$
de

w

'"'"
B
'"0

3.0

8·

~

07

o?

05

20
10

f=

-

--

--

CURRENT LIMIT

There are two limitations on the power-handling ability

03
50 70
50 70 10
20
3ll
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS}

100

of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ie-VeE limits of the

200

transistor that must be observed for reliable operation, i.e.,

the transistor must not be subjected to greater diSSipatIon
than the curves indicate.
The data of Figures 2 and 3 is based on TJ(pk) = 200 0 C; TC
IS

FIGURE 3 - 2N4347
10
70

30,j..!$
50#

1-73

0
2.0

1111
5.0

10

, 20
50
100
200
IB, lASE CURRENT ImA}

500

1.0k

2.0 k

2N3445
thru
2N3448

®

OJ

MOTOROLA

HIGH-SPEED SILICON ANNULAR
NPN POWER TRANSISTORS

7.5 AMPERE

· .. for switching and amplifier applications

POWER TRANSISTORS
SILICON NPN

FEATURES

• Fast Switching: Total Switching Time = 1.21J.s (Typ) @ 5.0 A
• High Gain: HFE =40 to 120@ 5.0 Amps (2N3447·48)
• Guaranteed DC Safe Area: 1.5 Amps (Min) @ VCE = 40 Vdc
• Low VeE (sat)' 1.0 Volt (Typ). 1.5 Volts (Max) @ 5.0 Amps
• Excellent Beta Linearity

60-80 VOLTS
115 WATTS

APPLICATIONS

• Specified safe area of this series allows reliable design for inverters.
converters. hammer. and servo drivers.
• Fast response makes it ideal for series regulators; high switching
speeds enhance its use in switching regulators.
• Wide bandwidth and flat beta hold·up result in exceptional ampli·
fier characteristics.

MAXIMUM RATING
Rating
Collector-Emitter Voltage

Symbol

2N3445
2N3447

2N3446
2N3448

Unit

80

Vdc

VCEO

60

Collector-Base Voltage

Vce

80

100

Vdc

Emitter·Base Voltage

VEe

6.0

10

Vdc

Collector Current-Continuous

IC

7.5

Base Current - Continuous

IB

4.0

Adc

Total Device Dissipation
Operating Junction Temperature

Po

Figure 1.2 Figure 1.3

Watts

TJ

-65 to +200

°c

Adc

Range

FIGURE 1 - POWER DERATING CURVE

Ii :~f"'r~Ni+t8
o

25

50

75
100
125
Te. CASE TEMPERATURE (OC)

150

175

200

STYLE 1:
PIN 1. BASE
2.EMITIER
CASE: COLLECTOR

DIM
A

8
C
0
E

MILLIMETERS
MIN MAX

6.35
0.99

F 129.90
G 10.67
H 5.33
J 16.64
K 1.18

These transistor. are also subject to 8afe ar•• curves as Indicated by Figures 2.
3. Both limits are applicable and must be observed.

n

R

NOTE:
1. DIM "U"IS OIA.

39.37
21.08
7.62
1.09
3.43

INCHES
MIN
MAX

-

-

0.250
0.039

-

30.40

1.177
11.8 0.420
5.59 0.210
17.15 0.655
12.19 0.440
3.84 . 4.09 0.151
26.67

-

Collector connected to case.
CASE 11·01

(TO-3)

1-74

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480

O.lSl
1.050

2N3445 thru 2N3448

ELECTRICAL CHARACTERISTICS (TC ~ 25°C unle.. otherwise notedl

(VEB = 6 Vdel
(VEB = 10 Vdel
Collector-Emitter Cutoff
(VCE = 60 Vde, VeE
(VCE = 60 Vde, VeE
(VCE = 80 Vde, VBE
(VCE = 80 Vde, VBE

Min

Symbol

Characteristic

Emitter-Base Cutoff Current
2N3445,2N3447
2N3446,2N3448
Current
= -1 Vdel
= -1 Vde, TC - 1500 CI
= -1 Vdel
= -1 Vde, TC = 1500 CI

Typ

-

-

0.25
0.25

-

-

0.1
1.0
0.1
1.0

-

-

1.0
1.0

80
100

-

-

60
80

-

-

-

20
40
20
40

45
85
40
75

60
120

-

0.6
0.8

1.5
1.5

-

1.0
1.0

1.5
1.5

-

1.0
1.0

1.5
1.4

20
40
1.0

-

100
200

1.6

-

-

260

400

-

ICEX
2N3445, 2N3447
2N3445,2N3447
2N3446,2N3448
2N3446, 2N3448

Collector-Emitter Cutoff Current

Max

mAde

mAde

ICEO
2N3445,2N3447
2N3446, 2N3448

(VCE = 40 Vde, Ie = 01
(VCE = 60 Vde, Ie = 01

Collector-Base Breakdown Voltage
(lC·l mAde, IE =01

Vde

eVCBO
2N3445,2N3447
2N3446, 2N3448

Collector-Emitter Sustaining Voltage

Vde

VCEO(susl

(lC = 100 mAde, Ie = 01

2N3445,2N3447
2N3446,2N3448

DC Current Gain

hFE
2N3445,2N3446
2N3447,2N3448
2N3445, 2N3446
2N3447,2N3448

(lc = 0.5 Ade, VCE = 5 Vdel
(lc = 3 Ade, VCE = 5 Vdel
(lC = 5 Ade, VCE = 5 Vdel

Collector-Emitter Saturation Voltage
2N3445, 2N3446
2N3447,2N3348

Base-Emitter Saturation Voltage

Vde

VeE(s.tI

(lC = 3 Ade, Ie = 0.3 Adel
(lc = 5 Ade, Ie = 0.5 Adel

2N3445,2N3446
2N3447,2N3338

Base-Emitter Voltage

Vde

VBE
2N3445,2N3446
2N3447,2N3448

(lC = 3 Ade, VCE = 5 Vdel
(lC = 5 Ade, VCE = 5 Vdel

Small Signal Current Gain

-

hie

(VCE = 10 Vde, IC = 0.5 Ade, f = 1 KHzl

2N3445, 2N3446
2N3447,2N3448
All Type.

(VCE = 10 Vde, IC = 0.5 Adc, f = 10 MHzl

Common Base Output Capacitance

pf

Cob
All Type,

(VCB = 10 Vdc, f = 0.1 MHzl

Switching Times
(VCC = 25 Vdc, RL = 5 ohm., IC = 5 A,lel = le2 = 0.5 AI
Delay Time plus Rise Time

-

Vde

VCE(s.tl

(lC = 3 Ade, 18 = 0.3 Adel
(lC = 5 Ade, 18 = 0.5 Adel

Unit
mAde

lEBO

1"

-

'd + t,

Storage Time

0.15
0.9
0.15

-

t,
tf

Fall Time

0.35
2.0
0.35

SAFE OPERATING AREAS
FIGURE 2 - 2N3445, 2N3447

FIGURE 3 - 2N3446, 2N3448

10
7.0
5.0

,

.......

3.0
2.0

....

OC ......

...........

5m,,, ---

1.0
0.7
0.5

~

\

\

'"

t-- r-- DC /

,

"'-

:'11sec>

~ __JA l\

Imsec

Imsec

0.3
0.2

- - 250

0.1
TJ~ - 175°C
0.07
25°C
J
0.05
0.01 1...._ ....._ _....._ ....._ _....._ ....._ .....1

to
""---T

o

10

20

30

....

0.5 msec

;;ec",

_

(~250~

E TT
1=---

J
J

, 175°C
25°C

I

I

I

50

60

70

of

40
50
60
o 10 20 30
VeE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-75

40

(
80

The Safe Operating Area
Curves indicate IC - VCE
limits below which the device will not go into secon·
dary breakdown. Collector
load lines for specific cir·
cuits must fall within the
applicable Safe Area to
avoid causing a collectoremitter short. (Duty cycle
of the excursions make no
significant change in these
safe areas.) To insure operation below the maximum
T J the power-temperature
deiating curve must be observed for both steady state
and pulse power conditions.

2N3583 thru 2N3585, 2N4240
2N6420 thru 2N6423 PNP

NPN

®

MOTOROLA

1.0 AND 2.0 AMPERE
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE
POWER TRANSISTORS

POWER TRANSISTORS
COMPLEMENTARY SILICON
250-500 VOL TS
35 WATTS

· .. designed for high-speed switching and linear amplifier applications for high-voltage operational amplifiers, switching regulators,
converters, inverters, deflection stages and high fidelity amplifiers.

•

Collector-Emitter Sustaining Voltage VCEO(sus) = 175 to 300 Vdc @ IC = 200 mAdc

•

Second Breakdown Collector Current Islb = 350 mAdc @ VCE = 100 Vdc - NPN
= 150 mAdc @ VCE = 100 Vdc - PNP

•

Usable DC Current Gain to 2.0 Adc

P

Symbol

Rating
Cotlector-Emitter Voltage

VCEO

Collector-Base Voltage

VCB

Emitter-Base Voltage

VEB

Collector Current Continuous

IC

Peak (1)

Base Current

IB

Total Power Dissipation

Po

@TC=250C,
Derate above 25°C

Operating and Storage Junetion Temperature Range

1=:=

4- -------

*MAXIMUM RATINGS

TJ,Tstg

2N3583 2N3584
2N6420 2N6421
175

.

250

1.0
5.0

.

2N3585
2N6422

2N4240
2N6423

Unit

300

300

Vdc

500

Vdc

250
375

-.

500

--

6.0
2.0
5.0

-.

1.0

-...

-..

35
0.2
-65 to +200

Vdc
Adc

Characteristic

I

Symbol

1

R8JC

1

1

Max
5.0

I

I

*lndicatesJEDEC Registered Data

(1) Pulse Test: Pulse Width = 5.0 mo, Duty Cycle .. 10%.

E

I SEATING PLANE
ST~~NEi.'BASE

0

---F--

2. EMITTER
CASE: COLLECTOR

a

Adc
Watts

L
H

W/oC
°c

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

t !

Unit

°C/W

s
MILLIMETERS
DIM MIN MAX
B 11.94 12.70
6.35 8.64
C
D
0.71
0.86
1.27
1.91
E
F 24.33 24.43
4.83
5.33
G
2.67
H 2.41
J 14.48 14.99
K
9.14
P
1.27
3.61
3.86
0
8.89
S
3.68
T
U
- 15.75

-

INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.152
0.350
- 0.145
- 0.620

All JEDEC Dimensions and and Notes Apply.
CASE 80-02
TO·66

1-76

'c

2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP

ELECTRICAL CHARACTERISTICS ITC" 25°C unless otherw"e noted.I

Characteristic
'OFF CHARACTERISTICS III
Collector-Emitter Sustamlng Voltage

IIC
IIc

= 200 mAde, 18 = 01 NPN
= 50 mAde, 18 = 01 PNP

2N3583 2N6420 VCEOlsusi
2N3584 2N6421
2N3585 2N6422
2N4240 2N6423

Collector Cutoff Current

= 01

IVCE" 150 Vde, 18

'IVCE" 225 Vde, VSEloffl" 1.5 Vde, TC" 150uCI
IVCE" 300 Vde, VSEloffl" 1.5 Vde, TC" 1500 CI

--

-

175
250
300
300

-

-

10
5.0
5.0
5.0

2N6420
2N6421
2N6422
2N6423
2N6420
2N6421
2N6422
2N6423

-

-

10
5,0
5,0
5.0
mAde

ICE X
2N3583
2N3584
2N3585
2N4240
2N3583
2N3584
2N3585
2N4240

-

1.0
1.0
1,0
2.0
3.0
3.0
3,0
5,0

-

-

5,0
0.5
0.5
0.5

-

5.0
0.5
0.5
0.5

40

-

40

-

40
10
30
S.O
8.0
10
25
25

200
100
150
80
80

40
10
30
8.0
8.0
10
25
25

200
100
150
80
80

-

1.0
5.0
0.75
0.75

-

1.0
5.0
0.75
0,75

-

-

-

1.0
1.0
1.0
2.0
3,0
3,0
3,0
5,0
mAde

IESO
2N3583
2N3584
2N3585
2N4240

2N6420
2N6421
2N6422
2N6423

Vde

-

mAde

-

2N6420
2N6421
2N6422
2N6423

Emitter Cutoff Current

IVSE " 6.0 Vde, IC " 01

-

ICEO
2N3583
2N3584
2N3585
2N4240

Collector Cutoff Current

IVCE" 225 Vde, VSEloffi " 1.5 Vdel
IVCE" 340 Vde, V8Eloffl" 1,5 Vdel
IVCE" 450 Vde, VSEloffi "1.5 Vdel

175
250
300
300

-

ON CHARACTERISTICS III
DC Current Gain

All

All

*IIC" 0.5 Ade, VCE" 10 Vdel
*lIc "0.75 Ade, VCE "2.0 Vdel
IIc "0.75 Ade, VCE " 10 Vdel
*IIC" 1.0 Ade, VCE" 2.0 Vdel
IIC" 1.0 Ade, VCE" 10 We)

2N3583
2N4240
2N4240
2N3584
2N3585
2N3583*
2N3584
2N3585

2N6420
2N6423
2N6423
2N6421
2N6422
2N6420
2N6421
2N6422

2N4240
2N3583
2N3584
2N3585

2N6423
2N6420
2N6421
2N6422

*Collector-Emltter Saturation Voltage

IIC" 0.75 Ade, IS" 75 mAdei
IIC" 1.0 Ade, IS = 125 mAdel

*Base-Emitter Saturation Voltage
IIC" 0.75 Ade, IS = 75 mAdel
IIc = 1.0 Ade, IS = 100 mAdei
Base-Emitter On Voltage

Ilc

= 1.0 Ade,

VCE

-

hFE

IIC" 0.1 Ade, VCE" 10 Vdel

100
100

100
100
Vde

VCEls.tl

-

-

Vde

VSElsat)
2N4240
2N35S4
2N3585

2N6423
2N6421
2N6422

All

All

= 10 Vdel

*Indicates JEDEC Registered Data.
= 300 I'S, Duty Cycle .. 2%,

11 I Pulse Test: Pulse Width

1-77

VSElonl

-

-

I,S
1.4
1.4

-

I.S
1.4
1.4

-

1.4

-

1.4

Vde

2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP

ELECTRICAL CHARACTERISTICS ITc

III

=

25 0 C unless otherwISe noted.)

Characteristic
DYNAMIC CHARACTERISTICS
*eurrent Gain - Bandwidth Product

(lC

= 200 mAde, VCE = 10 Vde,

Output Capacitance
IVCB = 10 Vde, IE

f test

=5.0 MHz)

2N6420
2N6421
2N6422
2N6423

10

-

10

-

15

-

15

pF

Cob

= 0, f = 1.0 MHz)

All

*Small·Signal Current Gain

(lC

MHz

fT
2N3583
2N3584
2N3585
2N4240

= 100 mAde, VCE = 30 Vde, f = 1.0 kHz)

-

120

-

120

25

350

25

350

-

3.0

.-

3.0

-

0.5

-

0.5

-

4.0

-

4.0

-

6.0

-

6.0

-

3.0

-

3.0

-

3.0

-

3.0

-

hfe
2N3583

2N6420

2N3584
2N3585
2N4240

2N6421
2N6422
2N6423

2N3584
2N3585
2N4240

2N6421
2N6422
2N6423

2N3584
2N3585
2N4240

2N6421
2N6422
2N6423

'SWITCHING CHARACTERISTICS
Rise Time

IVCC = 200 Vde, IC
IBl = 100 mAde)
IVCC = 200 Vde, IC
IBl = 75 mAde)

= 1.0 Ade,
= 0.75

RL

= 200 Ohms,

Ade, RL

= 267 Ohms,

Ir

Storage Time

IVCC = 200 Vde, IC = 1.0 Ade,
IBl = IB2 = 100 mAdel
IVCC = 200 Vde, IC = 0.75 Ade,
IBl = IB2 = 75 mAde)
Fall Time
IVCC = 200 Vde, IC = 1.0 Ade,
IBl = IB2 = 100 mAde)
. (VCC = 200 Vde, IC = 0.75 Ade,
IB 1 = IB2 = 75 mAde)

Is

~s

~s

tf

~s

Second Breakdown Collector Current

IVCE = 100 Vde)

* Indicates JEDEC Registered Data
111fT = Ihf.leftest.

FIGURE 1 - SWITCHING TIME TEST CIRCUIT

Vee

RS

51

01

tr,tf~10ns

DUTY CYCLE = 1.0%
-4V
RB and RC VARIED TO OSTAIN DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, '9:
MB05300 USED ABOVE IS ~ 100 rnA
MSD6100 USED BELOW IS ~ 100 rnA
FOR Id and 'r, OilS DISCONNECTED AND V2 = O.
FOR PNP TEST CIRCUIT, REVERSE DIODE AND VOLTAGE POLARITIES.
"

,

1-78

2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP

NPN
2N3583 thru 2N3585,2N4240

PNP
2N6420 thru 2N6423
FIGURE 2 - TURN-{)N TIME

1.0

I.

057~1'
,,['...

0.3

!

r-....

,,~

0.2

!w

VCC - 200 V
ICliB 50
IC/IB 10
TJ = 25°C

r'

o7

r---

0.3

......

0.07 f=ld@
.; 0.05 ~VBE(olf) = 0

......

003

50

70

100

200

300

500 700

10k

VTTiO,

0,01

2.0 k

20

r---

1/

td@

30

IC, COLLECTOR CURRENT (mAl

'"

50

70

"

"

0.02

'30

t:::

0.03 ' - -

........

~

I,

~

O. 1
>':0,0)
- 0.05

i'..

.......

~

t--

r0-

vcc - 200 V
-lcliB =50
ICliB = 10
TJ '" 25 0C

........

r--

0.2

"-

0.02
0.0 1
20

t7
/

I,

0.5

~ f=

\7r-.

O. 1

O~

~ f=

100

100

300

500 7001 Ok

IC, COLLECTOR CURRENT (mAl

--

2.0 k

FIGURE 3 - TURN-OFF TIME

0

10
7.0
5.0

-

3.0
2.0

VCC 200 V
IcliB = 5.0
Ic/lB = 10
TJ 25°C

I,

I'..

......
.......

0.3

0
2. 0

"'"

I,

;:;:; 1. 0

!

-

0.3

:::,..,tf

.... ,

o. 7

-' O. 5

I-

;--.-..,

........

"[

01
O. I
20

-

5. 0

i"'-o-

7
0.5

VCC 200 V
Ic/IB-50=
Ic/IB=IOTJ = 250C-

7. 0

0.2

-

II

O. 1
30

50

70

100

200

300

500 700 1.0 k

20

2.0k

30

50

70

FIGURE 4 -

100

200

300

500 700 1.0 k

2.0 k

IC, COLLECTOR CURRENT(mAI

IC, COLLECTOR CURRENT (mAl

CURRENT,GAIN - BANDWIDTH PRODUCT

FIGURE 5 -

CAPACITANCE

1000
1000

-

700
~ 500

;; 300

~

>U

200

,

TJ = 25°C

r-_
.....

'" r-- r-

Cob

~ 100

~. 70

50

-'

NPN
30 _ - I N ,
20
0.1
0.2

05

10

2.0

50

10

VR, REVERSE VOLTAGE (VOLTSI

IC, COLLECTOR CURRENT (mAl

1-79

10

50

100

2N3583 thru 2N3585. 2N4240 - NPN
2N6420 thru 2N6423 - PNP

FIGURE 6 w
u

THERMAL RESPONSE

1. 0

~

O.71=0'0.5

o.5
o. 3
o. 2

~
~

;

~§

t;;;;

0.2

V

::::! o. I

0.1

!:!! ~ 0.071=

0.05

z'"'

'fln

~!'

....... ~

L

-C J

~

"0

~!; ~.D5

II

f-

0.02

0.03

::
>

'o:it'""
0.02f:=

i

.

P(pk)

"""
~

ReJclt)'rlt)
ReJC
ReJC • 5.0aCIW
0 CURVES APPLY FOR POWER' PULSE TRAIN SHOWN

=

=
=

READ TIME ATII
TJ(pk)." TC' P(pk) ReJc(t)

12

DUTY CYCLE, 0 -11/12

A

Y

0.0 Ii-"'"
0.01

~

I I 11111

SINGLE PULSE

0.02

0.1

0.05

1.0

0.5

0.2

2.0

I I

10

5.0

20

50

200

100

500

1000

t, TIME(m~

ACTIVE-REGION SAFE OPERATING AREA
FIGURE 8 - 2N6420 thru 2N6423

FIGURE 7 - 2N3583 thru 2N3686, 2N4240
0

~

2.0

~

1.

0

8 o.

5

2N3583 LIMIT

t==+=t=+ TC' 25aC
-----

.. 0.2

~

O. 1 ~E!='

80.0

=1=

5

J-

1.~s'" P"-j)...

~

5.0 IrIS
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND 8REAKDOWN LIMIT . I
CURVES APPLY 8ELOW
'
RATED VCEO

.00",

.....

.
o

u

!:!

10

20

30

50

70

O.

5~TC-25ac

5.0m.

de
- BONDING WIRE L1MITF-'" I
2 - - - THERMAL LIMIT (SINGLE PULSE)
- - - SECOND BREAKDOWN LIMIT

3.0

11'1
5.0 7.0

10

"
1'\.\

BELOW

0.05

0.0 1
200 300

100

k-::

1.0

0.02

II II

II

500",

1.0m;~ I"'--to-.

2N64Z11 LIMIT

~ :: '~ ~ EECU=~~~Jc~~

~

2N3583
2N3584
2N3585&2N4240

5.0 7.0

~ 2.0

~

""

......

0::

B

de

100", 200';:::

5.0

200!"_

!:!
0.02
0.0 I
3.0

0

100",~

.....

5.0

2N6420
2N6421
fNf4f2..~3

I
20

"

30

50

70

100

200 300

VCE, COLLECTDR·EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 9 - POWER DERATING

100

"'"

0

~

~
...........

...........
...........

'"

~

"-

'60

'"z

a

.."~

SECJNDL
BREAKDOWN DERATING

r--

.....;

r--

"-

THERMAL "DERATING

40

""'"

20

.........

o

o

20

40

60

80

100

120

TC, CASE TEMPERATURE (aC)

140

160

""

lBO

200

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figures 7 and 8 is based on T C = 25°C; TJ(pk)
is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature acoording to Figure 9.
TJ(pk) may be calculated from the data in Figure 6. At high
case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown. Second breakdown limitations do not derate
the same as thermal limitations. Allowable current at the Voltages
shown on Figures 7 and 8 may be found at any case temperature
by using the appropriate curve on Figure 9.

1-80

2N3583 thru 2N3585 • 2N4240 - NPN
2N6420 thru 2N6423 - PNP

300

~ 70
50
30

g

20

FIGU/lE 10 - DC CURRENT GAIN
300
TJ" IS0'C
200
2S'C

t--.

,

C

'"

'"

1.

50

30

70 100
200 300
SOO 700 1.0 k
IC, COLLECTOR CURRENT (mAl

~ -~

I

o

20

SO

30

200 300
SOD 700 1.0 k
70 100
IC, COLLECTOR CURRENT (mAl

FIGURE 11 - COLLECTOR SATURATION REGION
1.0
in
T]

12~JJ

II I
\

o.B

3.0

2.0 k

'"
'"

~

0.8

<{

D. 6

.\
0.4

g_ o.

\
-lnOolmi

ri

N-Wl

0

>

7S0
mA

SOD mA

2

1.0

2.0

S.O

dill10

1000 mA

SO

100

200

\

'"
o

r-.. . . . rr- I-

r-

7S0 mA

~ 0.4

~

20

0.6

'"
~

2S0mA \

8

~

1000 mA

~

~

SOO mA

1.0

J1 L
II I

TJ" 25'C

O.B

VBE(satl @ICIIB " 5.0

0.2

8
o

SOO 1000

100
Ifll1

0.5

1.0

II II"-.

t ... r
2.0

S.O

0.6

VBE@VCE"2.0V

_....

FIGURE 12 - "ON" VOLTAGES
1.0

/. V

O.B

1

ICIIB"

0.4

-

>'

O. 2

VCE(satl

o
20

30

50

70 100

200

-,..,

300

LI 1
II I

TJ = 25°C

,/

~

i5

I

o

>

10

20

So

-

100,

200

SOO

IB, BASE CURRENT (mAl

i---

?

'"~

--

\
...... 1= ~I-

250mA

IB, BASE CU RRENT (mAl

~o

2.0 k

}2S'~

+J

o

o

~
r:i:

10

~

<{

'~"

," ,"

30

7.0
S,O

o

w

20

= Iss'c

0

"- ~

7.0
50
3.0
20

?

B
'-'

W
~ 10

t;;

'"

~

~

~

100
1=
70
SO

z
;;0

I-- -55
~ r-

- - VCE "2.0V
VCE" 10 V

-VCE"20V
-VCE" lOV

25°C

F=

z 100

~

PNP
2N6420 thru 2N6423

r- TJ "1150~

200

§

NPN
2N3583 thru 2N3585,2N4240

VBE(satl @ICIIB" 5.0

0.6

VBE@VCE"2,OV

?

Jt

--

...-:

w

IOL
I5':,1

~

~ 0.4

ICIIB = 10

o

>

/2t-

:>

,.,.

0.2
I-VCE(satl

500 700 1.0 k

o

2.0 k

20

IC, COLLECTOR CURRENT (mAl

30

50

70

100

200

300

1-81

A

IJ

500 700 1.0 k

IC, CDLLECTDR CURRENT (mAl

NOTE, DC CURRENT LIMIT FOR 21\13583, 2N6420 is 1.0 Amp ..

5.0

p-

.f'f'2.0
2.0 k

2N3713 thru 2N3716

NPN

MOTOROLA

SILICON NPN POWER TRANSISTORS

10 AMPERE

· .. designed for medium·speed switching and amplifier applications.
These devices feature:

POWER TRANSISTORS
SILICON NPN

• Total Switching Time at 3 A typically 1.15 fJ.s

6Q.BOVOLTS
150 WATTS

• Gain Ranges Specified at 1 A and 3 A
•

Low VCE(sat)' typically O.5V at IC

•

Excellent Safe Operating Areas

~

5A and 18

~

O.5A

• Complement to 2N3789·92

MAXIMUM RATINGS
Rating
Coliector·Base Voltage

Collector·Emltter Voltage
Emitter·Base Voltage

Collector Current

Symbol

2N3713
2N3715

2N3714
2N3716

Unit

VCB

80

100

Volts
Volts

VCEO

60

80

VEB

7.0

7.0

Volts

IC

10

10

Amps

Base Current

IB

4.0

4.0

Amps

Power Dissipation

Po

150

150

Watts

9JC
TJ and
Tstg

1.17

1.17

°C/W

Thermal Resistance
Operating Junction and
Storage Temperature Range

-65 to +200

lr~
r~-K
ESEATIN!~
PLANE

°c

I

FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

160
140

~

..................

120

............

~ 100

...............

52

::

~

B5

~

.e

DIM

80

...............

60

...............

40

...............

20

...............

0
0

25

50

75

100

125

150

175

200

Tc. CASE TEMPERATURE I'CI
Safe Area Limits are indicated by Fiaures 12. 13. Both limits are applicable and must be observed.

MILLIMETERS
MIN MAX

NOTE:
1. OIM "0" IS DIA.

INCHES
MIN
MAX

-

39.37
1.550
21.08
0.830
6.35
7.62 0.250 0.300
0.99
1.09 0.039 0.043
3.43
0.135
29.90
30.40 1.177 1.191
10.61
11.18 0.420 0.440
5.33
5.59 0.210 0.220
16.64 11.15 0.655 0.615
11.18 12.19 0.440 0.480
Q
4.09 0.151 0.161
3.84
R
26.61
1.050
ColI.ctor connected to c....

A
8
C
D
E
F
G
H
J
K

CASE 11·01
(TO·3)

1-82

2N3713 thru 2N3716 NPN

ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted)

Characteristic
Enhtter-Base Cutoff Current
(VEB " 7 Vdc)

All Types

Collector-Emitter Cutoff Current
(V CE = 80 Vde, VEE = -1:5 Vde)
(VCE " 100 Vdc, VBE:" -1.5 Vde)
(VCE = 60 Vde, VEE" -1.5 Vde, TC = 150 0 C)
(VCE =80 Vde, VBE " -1.5 Vde, TC = 150°C)

2N3713, 2N3715
2N3714, 2N3716
2N3713,2N3715
2N3714, 2N3716

Collector-Emitter Sustaining Voltage.
IIc = 200 mAde, IB " 0)

.

DC Current Gain
IIc = 1 Adt'. VCE
IIc = 3 Ade, VCE

=2

Symbol

Min

Max

lEBO

-

5

-

1
1
10
10

60
80

-

I CEX

VCEO(sus)'

2N3713, 2N3715
2N3714, 2N3716

mAde
mAde

Vde

-

hFE '
Vdc)

= 2 Vde)

Collector-Emitter Saturation Voltage
IIC" 5 Ade, IE " 0.5 Ade)

2N3713,
2N3715,
2N3713,
2N3715,

.

25
50
15
30

2N3714
2N3716
2N3714
2N3716
VCEls.t) •

2N3713, 2N3714
2N3715, 2N3716

Base-Emitter Saturation Voltage '"
(Ic = '5 Ade, IE = 0.5 Adc)

VBE( ••t)

2N3713, 2N3714
2N3715,2N3716

Base-Emitter Voltage '"
(IC = 3 Adc, VCE = 2 Vdc)

AU Types

Small Signal Current Gain
(VCE = 10 Vdc, IC = 0.5 Adc, f = 1 MHz)

All Types

VEE

*

.

hfe

90
150

-

-

Vde

-

1.0
O.B

-

2.0
1.5

-

1.5

4

-

Vde

Vdc

-

Typ

Switching Times (Figure 2)

IIlii.: i~!Bl " IB2

Unit

= 0.5 Adc)

0.45
0.3
0.4

tr
t.

Storage Time
Fall Time

IlS

If

·Use sweep test to prevent overheating

FIGURE 2 - TYPICAL SWITCHING TIMES
1.5

TEST CIRCUIT

---.I

.."
f(l

>!

I

,-

~-

30

"

s

Ie = 5A, I" = I" = 0.5A
f~ 150 cps DUTYCYCLE=2%

WAVESHAPE
AT POINT A

07

3-

I&... 1

::Lrl
j
1.-, -..1.-4.8

+11.5;;'1

t,

1.0

.......

.",
.........

0.5

~

'i;-

0.3

-9V

r--..

'--

.....

f:::: r-- ~I~

0 ..

_1.7rns·

rns

10011
lW

A

0.2

1

0

0.2

:~

2011
IW

90011

III jl82

0.1

01

+30V

0.3

05

0.7

1.0

2.0

3.0

5.0

":'"-9V

Ie, COLLECTOR CURRENT (AMPSI

1-83

10011

2N3713 thru 2N3716 NPN

-

FIGURE 3 - COLLECTOR CURRENT versus BASE CURRENT

10
7.0
5.0

10
7.0
5.0 ; - 2113713,2113714
/

3.0
2.0

i

I

I
Jl

A~

1.0
0.7
0.5

i1!

J ~ 175°C'

,I

0.1
0.07
0.05

~

I

VCE=2V
SEE NOTES 1,2

25°C

i

0.3

:§

0.1
0.07
0.05

4Q°C
/.

0.03
0.02

~
~

~

i

~

0.5 1.0 2.0

5.0 10

I,

VCE - 2V
SEE NOTES 2

25°C
40°C

20

50 100 200

0.01

500 1000

i1

0.1 0.2

0.5 1.0

2.0

5.0

10

20

50 100 200

500 1000

I" BASE CURRENT (mAl

I" BASE CURREtfT (mAl

FIGURE 4 - BASE CURRENT·VOLTAGE VARIATIONS

FIGURE 5 - COLLECTOR CURRENT·VOLTAGE VARIATIONS

10

-;,r

f

-

..F/

V

VCE = 2V
SEE NOTE 2

/. 'l

V

100
70
50
I

30

V
rJ= 175°, 25°C 1//-400c

TJ = IWCI

~

"

II

U

I

2sJ. '-40°C

10
7.0
5.0

Jl

I

II

o

I
0.4

0.8

1.2

1.6

2.0

0.1

V,& BASE·EMITTER VOLTAGE (VOLTS)

I iI

I II

I

0.2

I

2.0

VCE =2V
SEE NOTE 2

0.7
0.5
0.3

3.0

IJ

I

i

~

20

1.0

V"V

TJ~ Ir~~~/

0.02

1000
700
500
300
200

d~

0.03

1/
0.1 0.2

V

0.2

I

0.01

2M3715,2N3716

1.0
0.7
0.5

ii:
!is

J

0.3
0.2

I--

3.0
2.0

o

I I
0.4

0.8

1.2

VIE, BASE·EMITTER VOLTAGE (VOLTS)

NOTE 1. Dotted line indicates metered base current plus the lOBO of the transistor at 17S·C •
NOlE 2. Pulso teat: pulse width """ 200 J&&eC, duty cycle """ 1.5%

1-84

1.6

2.0

2N3713 thru 2N3716 NPN

FIGURE 6 - COLLECTOR-EMITTER SATURATION VOLTAGE VARIATIONS

1.4

I

II

1.0

~

~
8

I
\

0.6

,'-

....

........

0.2

-;

:ff

, t----.

~

,

\

-

I

l- tle~

I

'"

0.4

----

'i.,.

\ I
\

,

2S"C40"C---17S"C
SEE NOTE 2

'\.

\

I

I

\

I
I

\
I

1\

0.8

~
~

I

t-

,

1,,-

,

1.2

o

10

-

20

"t'-

1.._

"-

"-

\

---- -

"";:, r--

so

30

.......

--

-- -

-70

r---

I)
I r Ie

3A

IA

Ie

100

5A

:---

300

200

SOO

700

2000

1000

I,. BASE CURRENT (mAl
FIGURE 7 - BASE-EMITTER SATURATION VOLTAGE VARIATIONS

1.4

@
~

~

1.0

;

0.8

ffi

0.6

~

0.4

iii

-

1.2

--

-

!=
~
-;

!

-

- - -- - --- - r= F-" - r---1 - rr
I~ Ie

- I--

-

-1- !--t-

r---

- - -- - --- -- - It
III

r--

3A

T,
2S"C- 40"C--17S"C-

lA

II

1-

Ie" SA

SEE NOTE 2 r----

-

0.2

o
20

10

30

70

SO

100

200

300

SOO

700

2000

1000

I" BASE CURRENT (mAl
FIGURE 8 - COLLECTOR CURRENT versus
BASE-EMITTER VOLTAGE

FIGURE 9 - COLLECTOR CURRENT versus
BASE-EMITTER RESISTANCE

100

10
7,0
5.0

L

I

3.0

~

I

I
.2

2.0

I

VeE ~ Vao -20V

SEEIIOlE12
1.0
0,7

TJ ~1175'C

0.5

~

/

5,0

iii

2,0

~

.2

D.3

0.1

-0.&

3,0

TJ-lOO'C
REVERS~-

==

TJ -17S'C

0,3

./

VeE

0.2

r-+-FORWMD

-0,4

I

1,0
0,5

0.2

v

10

I
l!5

./

50
30
20

O. I

D.4

T:

lOO'C
Iill.

10

100

1000

111~imm
10,000
100,000

R... EXTERNAL BASE-EMITTER RESISTANCE (OHMSI

VIE. BASE.£IIITlER VOlTAGE (VOlTS)

1-85

VCEO 20V

II.

2N3713 thru 2N3716 NPN

FIGURE 10 - CURRENT GAIN VARIATIONS

IE

125

TJ~IWCI

r-2N3713.2N3714

--

~

~~

75

§
a
j

,.....

.--

100

-

V

~

h _Ie-Icoo
FE-'e + leBO

~

25'C

-~

-I-

50

t--.r..........

""" ""........

r----........

4O'C

25

VeE

2V

.""

~

----

.........

r--o

.01

.02

.03

.05

.07

0.2

0.1

0.3

0.5

0.7

1.0

2.0

i""::

3.0

5.0

7.0

10

Ie, COLLECTOR CURRENT lAMPS)

1-2N3~15. ~N37161

200

~

~

a
j

...-V

100

SO

o

-

.01

TJ

-,...---

150

-

.02

r--

-

I--

.05

.03

~175'C

,-

h _Ie-leBO

FEi'B+lcBO

..... :--

25'~
r-

-J,c
.07

0.1

0.2

0.3

r-

r----I'--

-

0.5

0.7

VeE~

...........
I'--

r-......

2V

--

f-... ~
r-~ ~ ;:::"
2.0

1.0

3.0

5.0

7.0

10

Ie, COLLECTOR CURRENT lAMPS)

FIGURE 11 - CURRENT GAIN - BANDWIDTH PRODUCT versus COLLECTOR CURRENT

--

l - t-

----- -r--.....
~

~

VeE ~ 6V

o

0.1

0.2

0.3

0.5

0.7

1.0

Ie, COLLECTOR CURRENT IAMP.S)

1-86

2.0

3.0

...........

5.0

2N3713 thru 2N3716 NPN

SAFE OPERATING AREAS
FIGURE 13 - 2N3714. 2N3716

FIGURE 12 - 2N3713. 2N3715

III

10
\.0 r-;-

DC to 5m,

i"'..'\ '\ \
~\

15
~

1.0

f1l

0.7

~

.9

-

500,<, -

<'50 ,
V,
I'

OCto 5m,

"-

...-

" '\.

'\.

-'\."

'\.

\

\

~l\1\ \

lms

~

"\

-

\ j50,<, -

\ \\

'\.

\,

0.5

250,<,

\\ \'

'" 0

1m'

s

~

-

2501"

\

"" K\\I\

,.

~

5001"

\ \'
,\,,\

\'

'\.\,\

0.3

~

0.2

0.1

o

10

20

30

40

50

60

70

10

20

30

40

50

60

70

80

90

VeE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

The Safe Operating Area Curves indicate Ie - VCE limits
below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall
within the applicable Safe Area to avoid causing a collectoremitter short. (Duty cycle of the excursions make no signifi-

cant change in these safe areas.) To insure operation below
the maximum T." the power-temperature derating curve
must be observed for both steady state and pulse power
conditions.

1-87

2N3719,2N3720
2N3867,2N3868
2N6303

®

MOTOROLA

SILICON PNP POWER TRANSISTORS
· .. designed for high·speed, medium-i:urrent switching and high·
frequency amplifier applications.
•

•

Collector·Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N3719,2N3867
= 60 Vdc (Min) - 2N3720,2N3868
= 80 Vdc (Min) - 2N6303
DC Current Gain hFE = 25·180@ IC = 1.0 Adc
= 40·200 @ IC = 1.5 Adc
= 30·150 @ IC = 1.5 Adc

3 AMPERE
POWER TRANSISTORS
PNPSILICON
40,60,80 VOLTS
6 WATTS

- 2N3719,2N3720
- 2N3867
- 2N3868,2N6303

•

Low Collector·Emitter Saturation Voltage VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc - 2N3719,2N3720
= 0.75 Vdc@ IC = 1.5 Adc
- 2N3867,2N3868,
2N6303

•

High Current·Gain - Bandwidth Product fT = 90 MHz (Typ)

•

2N3867 JAN and 2N3868 JAN also Available

·MAXIMUM RATINGS
Symbol

Rating

Collector-Emtter Voltage
Collector-Base Voltage

Vce

Emltter·Base Voltage

VEe

Collector Current

2N3719
2N3867

2N3720
2N3868

40
40

60

VCEO

Continuous
Peak

Vde
Vde
Vde
Ade
Ade

0.5
6.0
34.3
1.0
5.71

Ie

Po
Po
Operating and Storage Junction
Temperature Range

Unit

80
80

60
4.0
3.0
10

IC

Base Current

2N6303

TJ,Tstg

Watts
mW/oC

Watt

mW/oC

--65to+200 - - -

THERMAL CHARACTERISTICS
Characteristic

Max

°c

SEATING
PLAN
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

29

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

175

T

*Indlcates JEOEC Registered Data

FIGURE 1 - POWER DERATING

B. 0

§
G

6.0

z

~

A
B

7.0

5.

0

C

~

o
E

~ 4. 0

C

ffi

3. 0

~

2. 0

~

F
G

..........
..........

H

r-....

........

1"-....

l"-....

1.0

0
25

50

75

100

125

150

~

175

200

M
N
P
R

0.007
All JEDEC dimBnsionsand notes apply.
CASE 31·03

TO·5

TC. CASE TEMPERATURE (OC)

1-88

2N3719,2N3720,2N3867,2N3868,2N6303

*ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
~1__________________~Ch=.=r=K=bW~~=·~________________~I~~~~m=~~__L-__~M=i=n__~__~Me==x~__L-__=u=ni~t__~I~
OFF CHARACTERISTICS

..:.

COllector-Emitter Sustaining Voltage. (1)
IIc = 20 mAde. 18 = 0)

Vde

VCEO(sus)
40
60
80

-

40
60
80

-

4.0

-

-

1.0

-

150

2N3867
2N3868.2N6303

50
35

-

(lC = 1.5 Ade. VCE = 2.0 Vde)

2N3867
2N3868.2N6303

40
30

200
150

(lC = 2.5 Ade. VCE = 3.0 Vde)

2N3867
2N3868.2N6303

25

2N3867
2N3868.2N6303

20

-

2N3867
2N3868
2N6303

COllector-Base Breakdown Voltage
(lc = 100 "Ade. IE = 0)

Emitter·Base Breakdown Voltage
(IE = 100 "Ade. IC = 0)

BVEBO

Collector Cutoff Current
(VCE = Rated VCB. VBE(off)

ICEX

Collector Cutoff Current
(VC8 = Rated VCB. IE

Vde

BVC80
2N3867
2N3868
2N6303

= 2.0 Vde)
ICBO

= O. TC = 150°C)

-

Vde
"Ade
"Ade

ON CHARACTERISTICS (1)
OC Current Gain
(lC = 500 mAde. VCE

-

hFE

= 1.0 Vde)

(lC = 3.0 Ade. VCE = 5.0 Vde)

20

COllector-Emitter Saturation Voltage
(lC = 500 mAde. IB = 50 mAde)
(lC = 1.5 Ade. IB = 150 mAde)
(lC = 2.5 Ade. IB = 250 mAde)

VCE(satl

Base-Emitter Saturation Voltage
(lC = 500 mAde. IB = 50 mAde)
(lC = 1.5 Ade. IB = 150 mAde)
(lC = 2.5 Ade. IB = 250 mAde)

VBE(satl

Vde

-

-

0.5
0.75
1.3
Vde

0.9
-

1.0
1.4
2.0

60

-

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 100 mAde. VCE = 5.0 Vde. f test = 20 MHz)
Output Capacitance
(VC8 = 10 Vde. IE = O. f = 0.1 MHz)

Cob

Input Capacitance
(VEB = 3.0 Vde. IC = O. f = 0.1 MHz)

Cib

SWITCHING CHARACTERISTICS
Oelay Time

Rise Time
Storege Time
Fall Time

pF

-

120

-

1000

-

35

n.

65

n.

325

n.

75

ns

pF

-

(VCC = 30 Vde. VBE(off) = O.
IC = 1.5 Ade. IBI = 150 mAde)

ld

(VCC = 30 Vde. IC = 1.5 Ade.
IBI = IB2 = 150 mAde)

Is

tr

tf

·'ndicates JEDEC Registered Data
(1) Pulse Test: Pulse Width ~ 300 I's. Duty Cycle ~ 2.6,%.

(2) fT

MHz

fT

= Ihfe I- ftest-

1-89

2N3719,2N3720,2N3867,2N3868,2N6303

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

I

Characteristic

Symbol

Min

Max

40
60

-

-

10
10

/LAde

1.0
1.0

mAde

-

10
10

-

1.0

20
25
15

180
-

-

0.75
1.5

Unit

OFF CHARACTERISTICS

III

Collector-Emitter Sustaining Voltage (1)
(lC = 20 mAde, IB = 0)

Vde

VCEO(sus)
2N3719
2N3720

Collector Cutoff Current
(VCE = 40 Vde, VBE(oll) = 2.0 Vde)
(VCE = 60 Vde, VBE(oll) = 2.0 Vde)

ICEX
2N3719
2N3720

-

2N3719
2N3720

(VCE = 40 Vde, VBE(off) = 2.0Vde, TC= 150°C)
(VCE = 60Vde, VBE(off) = 2.0Vde, TC= 150°C)
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60Vde,IE = 0)

/LAde

ICBO
2N3719
2N3720

Emitter Cutoff Current
IVBE = 4.0 Vde, IC = 0)

mAde

lEBO

ON CHARACTERISTICS II)
DC Current Gain
(lC = 500 mAde,VCE = 1.5 Vde)
(lC = 1.0Ade, VCE = 1.5 Vde)
(lc = 1.0 Ade, VCE = 1.5 Vde, TC = -40°C)

-

hFE

Collector-Emitter Saturation Voltage
(lC= 1.0Ade,IB= 100 mAde, TC=-400Cto +1000C)
(lC = 3.0 Ade, IB = 300 mAde, TC = -40°C to +1000 C)

VCElsat)

B....Emitter Saturation Voltage
(lc = 1.0Ade,IB = 100 "'lAde, TC = -4QDc to +1000 C)
(lC = 3.0 Ade, IB = 300 mAde, TC = -40°C to +IOOoC)

VBE(sat)

Vde

-

Vde

-

-

1.5
2.3

60

-

-

120

-

1000

-

100

-

400

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 500 mAde, VCE = 10 Vde, I test = 30 MHz)

IT

Output Capacitance
(VCB = 10 Vde, IE = 0, 1= 0.1 MHz)

Cob

Input Capacitance
(VEB = 0.5 Vde, IC = 0, I = 0.1 MHz)

Cib

MHz
pF
pF

SWITCHING CHARACTERISTICS
Turn-On Time
(VCC= 12Vde, VBEloff)=O,IC= 1.0Ade,IBl =0.1 Ade)

ton

Turn-Off Time
(VCC= 12Vde,IC= 1.0Ade,IBl = IB2= 100 mAde)

toff

-I ndicates JE DEC Registered Data
(1) Pulse Test: Pulse Width";; 300 /L5, Duty Cycle = 2.0%.

ns
ns

(2) fT = Ihfe I- f test·

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - TURN-ON TIME
1000
700
500

VCC

.,@VCC=30V

Iclla-l0Tr25'C-

300

~ 200

"-

w

~ 100

.... 1,< IOns
DUTY CYCLE = I.I1'J1

-=
Vuu

NOTE:
For information OR Figures 3 and 6, HS and

He YNe

varied to obtain desired test conditions.

For ttl and tr spacifications. remove diode and
",VI'O.

-=
VCC
RC
RU
V,
V2
VUU

2N371.
2N3720
-12V
1211
10011
+8.0 V
-11 V
=3.0V

70
50

2N38&7
2N3B8&
2.8303
-3OV
1911
10011
13.6 V
-16.4 V
==3.0 V

f-

30

0
10

0.03

r-....: i'....

td @VaElolf) = 4.0

1111

I

t-...

III
0.05 0.07 0.1

0.2

0.3

0.5 0.7

IC, COLLECTOR CURRENT lAMP)

1-90

1.0

2.0

3.0

2N3719,2N3720,2N3867,2N3868,2N6303

FIGURE 4 - THERMAL RESISTANCE
1.0
0.7 r-D = 0.5
0.5
-'0
~ ~

- -- --

0.3 r--b.2

[!i ~ 0.2

ffi ~ o. 1
~ ~ 0.07
~ 0.05

f-:8 F'

:;;;:.. I""'"

0.1
0.05

"'"

t-",
t-o

6JClti - rltl 6JC
OJC = 29 0CIW Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READTIMEATI1
TJ(pkl- TC = Plpkl 6JClti

.....,-::::--

'i::" ~

Plpkl

.....L

0.01
SINGLE PULSE

0.03

111

0.5

0.7

_

-

DUTY CYCLE. D = I1/t2

I I
0.3

.-

-t2

0.02
0.01
0.2

-

==
~{yl-1
=

g

~~

'=
-

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

200

100

300

500

2000

700 1000

t. TIME (m,1

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
10

5Pl"

5.0
0:

~

I-

1.0

'"
a::
:::>

0.5

~

''''d~ f-

2.0

df'

5.0m,,:

50",

~500"'~
.......

...

....

TJ = 200°C
- - - - - BONDING WI RE LIMITED
------THERMALLY LlMITED@TC=250C
t;
O.
(SINGLE PULSE)
j 1 Eo
SECONO BREAKDOWN LIMITED
0
0.05
'-'
CURVES APPLY BELOW
~
2N3719.2N3862RATED VCEO
0.02
2N W~6~~33868
1
0.01
20
30
1.0
2.0 3.0
5.0 7.0 10
'-'
a::
0

There are two limitations on the power hand Ii n9 ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the
transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate .

I\.

0.2

The data of Figure 5 is based on T J{pk) = 2000 C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J{pk)< 200u C.
T J(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second

breakdown.
50

70

100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 6 - TURN-OFF TIME

FIGURE 7 - CAPACITANCE
1000

1000
700
300

700
500

ICIIB = 10
IBI IB2
TJ = 25°C

SOO

......

200

ts'= ;:::=c

-

'"
,J 70
50

30

tf@VCC=30V

20
10
0.03

0.05 0.07 0.1

J II I

0.2

300

~
u

200

1"'--"

0.3

0.5 0.7

1.0

;:0

U

~
u
u'

100
70
50

Cob

0

'"""2.0

Cib

r- r-

z

~

~ 100

~

TJ =:i50C

20
10
0.1

3.0

IC. COLLECTOR CURRENT (AMP)

0.2

0.5

1.0

2.0

5.0

10

20

VR. REVERSE VOLTAGE (VOLTS)

1-91

50

100

2N3719,2N3720,2N3867,2N3868,2N6303

FIGURE 8 - DC CURRENT GAIN
100
70

z

~

.

...

TJ' +15O"C

50

~ ~
B30 -b-

...

;;..- I-

...

- _lssJc

w

.......

- ...----~

-_

FIGURE 9 - COLLECTOR SATURATION REGION

'

.

.. 2.0
~
o
~ 1.6

~

~

'.

I"\i.

'

0.2

0.3

\IC = 0.5 A

0.4

N

'"W
>'" a
0.5 0.7

2.0

1.0

3.0

10

I
20

"

1.0 A

30

.
~

0

~

..

w
to

u

3;

lJ = 250 CI

II
I II

1.0

............

;;; +1.5
I-

ffi

;:;

/
./

a

0.03

0.05 0.07 0.1

0.3

ill

+1. a

.3-

~ -0.5

V

.,...... V

~ -1.0

1.0

2.0

-2.0

·2.5
0.03

3.0

II
0.05 0.07 0.1

.
::>

-TJ=150 0C
.
== -,

/

0.5 0.7

1.0

2.0

3.0

;{

/

1000C

.3-

~

L

a:
a:

VCE 30V-

.......

10 1

\

100

::>

'"
~ 10- 1

o

~
....
o

0.3

FIGURE 13 - BASE CUT·OFF REGION

~IOOoC

'"

0.2

IC. COLLECTOR CURRENT lAMP)

V

~ 10 I

/

OV8 for VBE

~ -1.5

i

0.5 0.7

~.

./

l-

TJ -150 0 C

I-

/

J'

'"
w

FIGURE 12' - COLLECTOR CUT·OFF REGION

;{ 102

500 700 1000

.J.

Jol c for lCEI"I)

IC. COLLECTOR CURRENT lAMP}

VCE=30"

300

!;;:

I0.2

-

o

0

VCEI..!)@ICIIB= 10

200

lOa

'lcIIB" hFEI2
T = -550C10 +1500c

H:w. +0.5

I

VBE@VCE = 2.0.V
~ 0.6 ~
>
>' 0.4

II II

+2.0

e

V/
V V

0.8 e- VBIEI~t) @ICIIB-IO

0.2

50 70

FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5

II
e-

2.5 A

-

N:(iA

18. BASE CURRENT ImA)

FIGURE 10 - "ON" VOLTAGES

1.2

..,..

,

L

IC. COLLECTOR CURRENT lAMP)

1.4

1,\

\

g

- - - VCE=2.0V
- - - - - VCE=5.0V
0.05 0.07 0.1

\
1\

\

~ ,0.8
o

\

~

10
0.03

~

w

:::i

t-\,.

~ 20 :::;..

TJ' 25bC

\

o
;; 1.2

--- .~

.......

11

\
.\

~

100

~

...':;10' If-REVERSE

FORWARO

10- 2

-0.1

-0.2

25 0C

~REVERSE

-'

~250C

+0.1

~

/

-0.3

-0.4

VBE. BASE·EMITTER VOLTAGE IVOLTS)

10. 3
+0.1

FORWARO
-0.1

-0.2

VBE. BASE·EMITTER VOLTAGE IVOLTS)

1"-92

-0.3

·0.4

2N3738, 2N3739 NPN
2N6424, 2N6425 P'NP

®

MOTOROLA

III
HIGH VOLTAGE COMPLEMENTARY SI LICON
POWER TRANSISTORS

1.0 AMPERE

POWER TRANSISTORS
COMPLEMENTARY SILICON

· .• designed for high·speed switching, linear amplifier applications,
high·voltage operational amplifiers, switching regulators, converters,
inverters, deflection stages and high fidelity amplifiers.
•

Coliector·Emitter Sustaining Voltage VCEO(sus) = 225 Vdc@ IC = 5.0 mAdc (2N3738, 2N6424)
= 300 Vdc @ IC = 5.0 mAdc (2N3739, 2N6425)

•

DC Current Gain hFE=40·200@IC=100mAdc

•

Current-Gain - Bandwidth Product fT = 10 MHz (Min) @ IC = 100 mAdc

•

ISlb Rated to 2.0 Amperes

225, 300 VOLTS
20 WATTS

"MAXIMUM RATINGS
Svmbol

Rating

Collector-Emitter Voltage

2N3738 2N3739
2N6424 2N6425

Unit

VeEO

225

300

Vdc

Collector-Base Voltage

VeB

250

325

Vdc

Emitter-8ase Voltage

VEe

6.0

Vdc

Ie

1:6J
2.0

Adc

18

0.50
1.0

Adc

Collector Current - Continuous
- Peak

Base Current - Continuous
- Peak

Total Device Dissipation @ TC ::: 25°C
Derate above 25°C

20
0.133

Po

Operating and Storage Junction
Temperature Range

Watts
w/oe

-65 to+200

TJ,Tstg

°c

LL~:~
.

Tf
E

SEATING PLANE

---F--

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

* Indicates JEDEC Registered Data

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

FIGURE 1 - POWER DERATING
100

['-,.
i'-..

0

"'-

0

o

o

""'"
25

50

15

""
100

MIlliMETERS
DIM MIN MAX
B 11.94 12.10
C
6.35 8.B4
D
0.11 0.86
E
1.21 1.91
F 24.33 24.43
G 4.83 5.33
H 2.41
2.67
J
14.4B 14.99
K
9.14
P
1.21
Q
3.61
3.B6
S
B.89
T
3.6B
15.16
U

-

""'" "

125

TC. CASE TEMPERATURE tOC)

~

150

115

"

200

1-93

-

s

INCHES
I
MAX
0.410 0.500
0.250 0.340
0.02B 0.034
0.050 0.015
0.958 0.962
0.190 0.210
0.095 0.105
0.510 0.590
0.360
0.060
0.142 0.152
O. 50
0.145
O. 20

-

All JEDEC Dimensionsand and Notes ApplyCASEBO'()2

TO·66

2N3738, 2N3739 NPN/2N6424,2N6425 PNP

I

ELECTRICAL CHARACTERISTICS (Tc = 25 0 C unless otherwise noted.)

I

Characteristic

Symbol

Min

Max

Unit

·OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 5.0 mAde, IB = 0)

Vde

VCEO(sus)
2N3738, 2N6424
2N3739, 2N6425

Collector-Emitter Cutoff Current
(VCE = 125 Vde, IB = 0)
(VCE = 200 Vde,lB = 0)

225
300

mAde

ICEO

-

2N3738,2N6424
2N3739,2N6425

Collector-Base Cutoff Current
(VCB = 250 Vde, IE = 0)
(VCB = 325 Vde, IE = 0)

-

0.25
0.25
mAde

ICBO

-

2N3738, 2N6424
2N3739, 2N6425

Collector Cutoff Current
(VCE = 250 Vde, VEB(off) = 1.5 Vde)
(VCE = 300 Vde, VEB(off) = 1.5 Vde)
(VCE = 125 Vde, VEB(off) = 1.5 Vde, TC = 100oC)
(VCE = 200Vde, VEB(off) = 1.5 Vde, TC= 100oC)

-

mAde

ICEV

-

2N3738, 2N6424
2N3739,2N6425
2N3738, 2N6424
2N3739, 2N6425

Emitter-Base Cutoff Current

0.1
0.1

-

0.5
0.5
1.0
1.0

-

0.1

mAde

lEBO

(VEB = 6.0 Vde)
"ON CHARACTERISTICS
DC Current Gain (1)
(lC = 50 mAde, VCE = 10 Vde)
(lC = 100 mAde, VCE = 10 Vde)
(lC = 250 mAde, VCE = 10 Vde)

-

hFE

Collector-Emitter Saturation Voltage (1)
(lC = 250 mAde, IB = 25 mAde)

VCE(s.t)

Base-Emitter "ON" Voltage (1)
(lC = 100 mAde, VCE = 10 Vde)

VBE(on)

-

30
40
25

200

-

2.5

-

1.0

10

-

-

20

35

-

Vdc
Vde

SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 100 mAde, VCE = 10 Vde, f = 10 MHz)

MHz

fT

• Output Capacitance

pF

Cob

(VCB = 100 Vde, IE = 0, f = 100 kHz)

·Small-Signal Current Gain

-

hfe

(lC = 100 mAde, VCE = 20 Vde, I = 1.0 kHz)
"Indicates JEDEC Registered Oat.
(1) Pulse Test: Pulse Width ";300 I'S, Duty Cycle"; 2%.
(2) fT = I hIe I- frequency

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
01 Must Be Fast Recovery Type, e.g.

Vee

MBD530a Used Above IS = 100 rnA
MSD6100 Used Below I B = 100 rnA

+150 V

Re
j251"r-

VI

V2

'?b
9.0V

Scope

RB

51

01

~10 ns
t r , tf
Duty Cycle::i: 1.0%

-::-4.0 V

RS and RC Varied to Obtain Desired Current Levels
For td and t r , 01 is disconnected and V2 = 0
For PNP test circuit, reverse diode and voltage polarities.

1-94

2N3738, 2N3739 NPN/2N6424/, 2N6425 PNP

III

FIGURE 3 - THERMAL RESPONSE
1. 0

O. 7

~

r--D-O.

o. 5

~::i 0.3

-....

0.2

z<

~~ O. 2

~

20

~~

t-~ O. 1
Wz
~~ 0.07e-- 0.05
~ ffi 0.05

~ 0.02

r== ~

,.-

0.0 1
0.01

ROJCIt) = ,It) ROJC

o CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

"tj2J

./~

READ TIME AT t1

DUTY CYCLE 0" q/12

SINGLE PULSE

I

0.05

0.02

ROJC" 7.5 0CfW

I

....

~'"

;~ 0.03e-- 0.02

-r-fLn
P{pk)

~~

-.::E

I::!:! "

./ ?

0.1

01

01

0.5

10

20

50

10

I

I

TJlpk) = TC = Plpk) ROJClt)

I 111111

20

I

100

50

I

I

I I I

200

500

1000

t, TIME (ms)

ACTIVE-REGION SAFE OPERATING AREA
FIGURE 4 - 2N3738. 2N3739
2.0

r, SOb;;" HOOps
, ,
, ,1>100~'
~.>

J"" ....
5.0m;

1.0
0.7

~
::!: 0.5

FIGURE I; - 2N6424. 2N642&

'",.5

1.0ms-

>-

de

I-

ffi

0.3

13

0.2

~

0

..,
j

I-

8
!}

,\.

I

r--

a:

0.1

TC = 250C
- - - - BONDING WIRE LIMITED
THERMALLY LlMITEO
(SINGLE PULSE)
SECONO BREAKOOWN LIMITED
CURVES APPLY BELOW RAT EO VCEO

F= ---

0.0 7~
0.05

f=

0.03
0.02
3.0

""

5.0 7.0

10

I
20

"

III
30

2. 0

50

70

100

"\
~

"

.:\\

200

300

......

1.0
O. 7

O. 5

~a:

O. 3

=>
~

0.2

...

\

... ...

200j'

It\.

.>..\ \ \
\
~ ~ \\

500~,

TC = 250C
jm
1 =~--- BONDING WIRE LIMITED
5.0 m,
o. =----THElIMALLY LlMITEO
de
(SING LE PU LSE)
8 0.07 SECOND BREAKDOWN LIMITED
!} 0.05
CURVES APPLY BELOW RATEO VCEO
0.0 3
0.0 2
20
3D
50 70 100
0.3
0.5 0.7 10
o

~

-f-

=._--

II "

II

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of IFigures 4 and 5 is based on T C = 25°C; T J(pk) is
variable depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ (pkl ..;; 175°C. T J(pk)
may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown. Second breakdown limitations do not derate the same
as thermal limitations. Allowabte current at the voltages shown
on Figures 4 and 5 may be found at any case temperature by
using the appropriate curve on Figure 1.

1-95

\50~,_

\ ~100jJS

'-,'I~
200

300

2N3738, 2N3739 NPN/2N6424,2N6425 PNP

NPN

PNP

2N3738.2N3739

2N6424. 2N6425
FIGURE 6- DC CURRENT GAIN

300

""TJ~ 15~C

200

z

;;:

...coz
..,~

0

w

30

-

20

o

~

.....

....

'" 100
~ 70 - -55°C
!Z 50

w

~

~

25°C

..= f=250C

0

TJ = 150°C

200

---VCE=10V

N-...

100

300

..!.........!.. JCE 1= 1.0~

'"'"

~

~

10

0- 'r~

~

"'I',"' ['...
"' I\.
.....

0

..,a
co

~ .-~~

!::

-55°C
10-

0

r--::.'

I0

7.0
5. 0

7. 0
5. 0=='

3. 0
10

3.

20

30

50

70

100

200

300

500 700 1000

VCE 2.0V

o- - - - I VCE = 10V
20

10

30

IC. COLLECTOR CURRENT (rnA)

50

70

200

100

300

500 700 1000

IC, COLLECTOR CURRENT (mAl

FIGURE 7 -COLLECTOR SATURATION REGION
-

~

1.0

--

co

~
~ 0.8

~

11111
'I~=

lOrnA
SOmA

20 rnA

III
I 11

LU

100 rnA

250 rnA

~
o

TJ = 25°C

~

0.4

\

\

\
\

\

0.2

~

I

0.2

0.5

1.0

..,w

5.0

10

20

50

>

100

\

1\

\
......

to-

8

2.0

TJ = 25°C

f---1 i50~A

r\

~

\

j o.2

a
0.1

\

t;

......

W

\
0.4

'"co

t\.

\

\

'"
~

o

..,

\ II

> 0.6

~

>

III

~6ImA_ ;--" 10~~~

IC
rnA

co

~ 0.6

-~
o..,

I I

=1~ 2b~A

>
~ 0.8
co

o

~

1.0

-"
t-

O
0.1

0.2

0.5

1.0

IB, BASE CURRENT (rnA)

5.0

2.0

10

20

50

100

lB. BASE CURRENT (rnA)

FIGURE 8 - "ON" VOLTAGE
1.0
TJ = 25°C
0.8
V8E(sat)@ ICI18 = 10

~

~ i--

:..-

1.0

-

TJ = 25°C

o.8

~ 0.6 ===V8E@VeE = 10 V

_f-"I--'
V8E(sat) @ICI18

=

I--

10

f--

",.

~

6 =-V8E @VCE = 10 V

w

to

~

o

>
>'

I I

0.4

0.2

JM20

f--- VCE(sat)

o

10

20

30

50

1I11
70 100

V
I-

1/

/r

200

I

300

I

4

J I

1/

j

o. 2
500 700 1000

IC. COLLECTOR CURRENT (rnA)

0
10

20

IL

IcI18=~

=VCE(sat)
30

50

70

100

200

~
300

IC. COLLECTOR CURRENT (rnA)

1-96

1-'5.0

500 700 1000

®

21 3740,A
21 3741,A

MOTOROLA

III
POWER TRANSISTORS
MEDIUM·POWER PNP TRANSISTORS

PNPSILICON

6D-8OVOLTS
25 WATTS

· .• ideal for use as drivers, switches and medium-power amplifier
applications. These devices feature:
•

Low Saturation Voltage - 0.6 VCE(sat) @ IC = 1.0 Amp

•

High Gain Characteristics - hFE@ IC = 250 mA: 30-100

•

Excellent Safe Area Limits (See Figure 2)

•

Low Collector Cutoff Current 100 nA (Max) 2N3740A, 2N3741A

•

Complementary to NPN 2N3766 (2N3740) and 2N3767 (2N3741)

*MAXIMUM RATINGS
Symbol

Rating

Collector·Emitter Voltage
Emitter-Base Voltage
Collector· Sa.. Voltage

VCEO
VEB
VCB
IC

Collector Current - Continuous
- Peak (Note 11

2N3740
2N3740A

2N3741
2N3741A

60

SO
7.0

7.0
60

Vdc
Vdc
Vdc

80
4.0
10

IB

2.0

Adc

25
0.143

Watts

TJ,Tstg

-65 to +200

Derate above 2SoC

SEATING PLANE
---F--

Adc

Po

Base Current
. Total Device Dissipation @TC =250 C

Operating and Storage Junction
Temperature Range

Unit

L-H3---1i'-~~T-+

wf'c
°c

G

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: CO LLECTO R

Note 1: See Figure 2

FIGURE 1 - POWER·TEMPERATURE DERATING CURVE

25

~ .....

!;o

S 20

~

z

!2 15

f
~

•

.............

...............

10

.............

'"~
~

e

5.0

0

0

25

MILLIMETERS
MIN MAX
11.94 12.70
C
6.35 8.64
D
0.71 0.88
E
1.27 1.91
F 24.33 24.43
G 4.83 5.33
H 2.41 2.67
J 14.48 14.99 .
K
9.14
p
- 1.27
n 3.61 3.88
S
- 8.89
T
3.68
U
1 .75

DIM

...........

50

75

100

125

r-......

~ ...............

150

175

TC'TEMPERATURE (OCI

200

~

5

INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 .210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 .15
- 0.350
- 0.145

-

All JEOEC Oimlf1sionsand and Notes Apply.

S8f. Ar•• Curves ar. indicated by Figura 2.
Both limits are applicable and mult be observed.

CASE 80-02
(T0-66)

'Indicat.. JEOEC Registered Data.

1-97

2N3740, A, 2N3741, A
*ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)
Cheqcteristic

Symbol

Min

MIIx

60

-

Unit

OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage
(lC = 100 mAde, 'B = 0)

IIJ

 10 MHz)

10

Common-Base Output Capacitance
(VCR

=

10 Vdc,

Ie = 0

Ade, 1

=

100 kHz)

Small-Signal Current Gain

ht.

(Ie = loa mAde, VeE::: 10 Vdc, f "" 1.0 kHz)
(11

40

Pulse Test: Pulse Width !S3001lS, Duty Cycle !:2. 0%.

FIGURE 2 - ACTIVE REGION SAFE AREAS

2.0

1-+-I--4"..--I-+-P-d

The Safe Operating Area Curves indicate
!c,VeE limits below which the device will not
go into secondary breakdown. Collector
load lines for specific circuits must fall
within the applicable Safe Area to avoid
causing a collector·emitter short. (Case
temperature and duty cycle of the excur·
sions make no significant change in these
safe areas.) The load line may exceed the
BVcEo voltage limit only if the collector cur·
rent has been reduced to 20 mA or less be·
fore or at the BVc" limit; then and only then
may the load line be extended to the abso·
lute maximum voltage rating of BVclO• To
insure operation below the maximum T J ,
the power·temperature derating curve must
be observed for both steady state and pulse
power conditions.

~ t---t----t--t--t-+-+-t--t-=""'I.:--i---t-~~~~!~!~f~@~~~~~~~~~~l~

§'"

1.0
0.6
'" 0.4

~

~
8

t----j--+-+-t---I'--t-_t_

2 0.2
0.1
0.06
0,04

10

20

30

40

50

60

Ve ., COLLECTOR EMInER VOLTAGE (VOLTS)

1-101

70

80

II.

2N3766,2N3767

CUT-OFF CHARACTERISTICS

LARGE SIGNAL CHARACTERISTICS

FIGURE 4 - TRANSCONDUCTANCE

FIGURE 3 - TRANSCONOUCTANCE

1000
700

SOD

,,
r-

/

Ve.~SV

I

~
.!J

200

I
T) +lObOC

-

!

I--- r-

100

TJ I

0.10

f- ::::: TJ
r-

~

+2~oC

-

-

+100°C

/

FORWARD BIAS

REVERSE BIAS

LL.l

0.6

1.0

0.8

0.4
VIE, BASE·EMITTER VOLTAGE (VOLTS)

1.2

0.6

20

I

-

"

I

1/ II

10

0.4
0.2
VIE, BASE-EMITTER VOLTAGE (VOlTS)
0.2

0.4

0.6

10

//

~

Ve• ='40 V

/ I II

Ve.~SV

I

II

FIGURE 6 - EFFECT OF BASE·EMITTER RESISTANCE

FIGURE 5 - INPUT ADMITTANCE

30

~

~

0.001
0.2

II

I

7.0

I

/
II
TJ=+lWC

1.0

S.O

TJ ~ +l7S·C

I I

3.0

II

-

~

I I
I I ...rf..V

_

1.0

I--I---

TJ

+2SoC

t---J

I

0.3

I

,

/

~

B

/ I I

TJ=+lOO·C

./

I

..... {
I

2.0

O.S

7

0.01

TJ ~ -SSoC -

10

0.7

I

./

.9

SO

20

~

1/

TJ ~ +l7S·C

rt

~

70

~

/ II

~

I~r--..

!

f

1.0

II
I I

-

30

1

I

Ve.~40V

[J

1//
TJ~+lWC

!e

I

I-- -

I

II

I

300

1

I

10
I

e 0.10

TJ = +IOO·C

T

I

~.9
I....

N

TJ = -SSoC

0.01

0.2

II

0.1
0.2

II TJ

II

0.6
0.4
0.8
V... BASE·EMITTER VOLTAGE (VOlTS)

7+2~OCI I

0.001
1.0

1.2

IIl2

1-102

103
104
10&
RIE, BASE.£MITTER RESISTAllCE(OIIMS)

~

106

2N3766,2N3767
FIGURE 7 - CURRENT GAIN

300

I
I
TJ ~ +17SoC

200

I
I
--VCE ~ 5V

f+ 100°C

TJ
100

z:

~

~

r-_

r'

.....
r- :::-,:,-

'-

I-

:~

~

SO

i

2V

VCE

Il-

+2SoC

TJ

~

-...
··r

TJ~

'I

SSoC

\.

30

" -'"
I\,
)

\.

20

,

\.

\

10
10

20

30

100

70

50

500

300

200

700

1000

+25°C

r- f-

Ic. COlLECTOR CURRENT (IlIA)

FIGURE 8 - COLLECTOR SATURATION REGION
2.0

'\.

~

"'~

"'.......

Ic ~500mA

Ic ~ lOOmA

1.S

Ic~I'A

"-

~

~
e'"
ill

i!i

'\.

1.0

,'-

ro....

:::l

8

;A

- --

.....

O.S

O.S

0.7

2.0

1.0

3.0

S.O

7.0
I~

10

r-

I

8.0

I I I

TJ ~ +2SoC
6.0

;
~

I-- I-

v"''''' @ Ie/I, ~ 10
I

0.6

....

~

V,,@Vco

2V

It

t

......

P

;:
.5

~

0.4

II

0.2

VCOI ... ,@'c/I,-IO
~
II
I I II V

II
20

30

50

100

2.0

-0.2

j..f"'"

I I
I I

i

1

,or

TJ ~ +25°C to +l75"C

300

500

1000

Ie. COLlECTOR CllflRENT /1lIA)

/

I j...

!JvC,,,,VCE/ut,
.I I
to- T'I I
I!Jv,for v"

TJ~

1/
I-'"

~

SSOClo+25°C

-

TJ'= +2SOC 10 +l7SOC -

....

TJ - --{;soc to +2SOC

~

I I I I I I

-

I I
100

200

300

400

500

500

700

Ie. COLlECTOR CURRENT fmA)

1-103

I

.... ~

-4.0

200

100

70

To compute saturation ,oltages
fslMt' @ operatincTJ ~V"Mtl
+25°C + !Jv.loperating TJ - 25°C)
Use appropriate Ov for voltage of interest. I .1 I.
Uje arrale e :",),ral"'e{anfe intL"jl

4.0

i

1
10

50

FIGURE 10 - TEMPERATURE COEFFICIENTS

1.0
0.8

30

20

BASE CURRENT (IlIA)

FIGURE 9 - "ON" VOLTAGES
1.2

TJ

800' 900 1000

2N3771 2N3772
2N6257

®

20 and 30 AMPERE

HIGH POWER NPN SILICON POWER TRANSISTORS
... designed for linear
switching applications.
•

~mplifiers,

MOTOROLA

POWER TRANSISTORS
NPN SILICON

series pass regulators, and inductive

40 and 60 VOLTS
150 WATTS

Forward Biased Second Breakdown Current Capability
ISlb = 3.75 Adc@VCE = 40 Vdc - 2N3771
= 2.5 Adc @ VCE = 60 Vdc - 2N3772
= 3.75 Adc@VCE = 40 Vdc - 2N6257

*MAXIMUM RATINGS
Symbol

2N3771

2N3772

2N6257

Unit

Collector-Emitter Voltage

Rating

VeEO

40

60

40

Vdc

Collector-Emitter Voltage

VeEX

50

80

50

Vdc

Collector-Base Voltage

Ves

50

100

50

Vdc

Emitter-Base Voltage

VES

5.0

7.0

5.0

Vdc

Collector Current - Continuous

Ie

20
30

20
30

Adc

Peak
Base Current - Continuous

30
30

IS

7:5
15

5.0
15

5.0
15

Adc

Peak

Total Device Dissipation @ T C

= 2S D C

Po

150
0.855

wloe

TJ. Tstg

-65 to +200

°e

Derate above 2SoC

Operating and Storage Junction
Temperature Range

Watts

r~
r~,
Es~1
PLANE

THERMAL CHARACTERISTICS
Characteristic

2N3771, 2N3772, 2N6257

Thermal Resistance, Junction to Case

1.17

• Indicates JEDEC Registered Data
STYlE 1:

PIN I. BASE
2. EMITTER
CASE; COllECTOR

MILLIMETERS

DIM MIN

FIGURE 1 - POWER DERATING

A
B

200
175
150
125

D
E

...........

75

"-

0.250
0.039

-

75

100

125

I'--.
150

1.550
0.830
0.3
0.043
0.135

1.177 1.191
11.18 0.420 0.440
Q
5.
.220
11.15 0.655 0.675
12.19 0.440
.480
4.09 0.151 0.1 1
R
1.050
- 2lI.67 Cotlectorconnectedtocase.

CASE l1.Ql

...........
50

30.40

INCHES
MIN MAX

.3
J 16.64
K 11.18
Q
3.84

........ ~

0

25

-

MAX
39.37
21.08
7.62
1.09
3.43

H

25

o
o

6.35
0.99

F
.90
G 1.7

"

100

-

175

200

TC. CASE TEMPERATURE (DC)

1-104

I.

2N3771,2N3772,2N6257

ELECTRICAL CHARACTERISTicS

ITC ~ 25°C unless otherwise noted I
Symbol

Min

Max

Unit

2N3771
2N3772
2N6257

VCEOlsusl

40
60
40

Vdc

2N3771
2N3772
2N6257

VCEXlsusl

50
80
50

2N3771
2N3772
2N6257

VCERlsusl

45
70
45

-

Characteristic
OFF CHARACTERISTICS

·Collector-Emitter Sustaining Voltage (1)
IIc ~ 0.2 Adc, IB ~ 01
Collector-Emitter Sustaining Voltage

IIc = 0.2

Adc, VEBloffi

= 1.5 Vdc, RSE = 100 Ohmsl

Collector-Emitter Sustaining Voltage

IIc = 0.2

Adc, RBE ~ 100 Ohmsl

• Collector Cutoff Current

IVCE = 30 Vdc, IB
IVCE ~,50 Vdc, 'S
IVCE = 25 Vdc, IB

ICEO

= 01

= 01
= 01

·Collector Cutoff Current
IVCE = 50 Vdc, VEBloffi = 1.5 Vdcl
IVCE = 100 Vdc, VEBloffi ~ 1.5 Vdc)
IVCE = 45 Vdc, VEBloff) = 1.5 Vdcl
IVCE

= 30 Vdc, VEBloffi = 1.5 Vdc, TC = 1500 CI

IVCE

= 45 Vdc, VESloffi = 1.5 Vdc, TC = 150°C)

• Collector Cutoff Current
IVCB = 50 Vdc, IE = 01
!VCB

= 100 Vdc,

IE

= 7.0 Vdc,

IC

2N3771
2N3772
2N6257

-

2.0
5.0
4.0

2N3771
2N3772
2N6527

-

-

10
10
20

-

2.0
4.0
5.0

-

5.0
10
5.0

2N3771
2N3172
2N6257

15
15
15

60
60
75

2N3771
2N3172
2N6257

5.0
5.0
5.0

-

-

2.0
1.4
1.5

mAde

ICEV

mAde

ICBO

= 01

• Emitter Cutoff Current
IVSE = 5.0 Vdc, IC ~ 01

IV BE

-

10
10
10

2N3771
2N6257
2N3772
'EBO
2N3171
2N6257
2N3172

= 01

Vdc

mAde

-

2N3771
2N3772
2N6527

Vdc

mAde

"ON CHARACTERISTICS
DC Current Gain (1)

Collector-Emitter Saturation Voltage

2N3171
2N3772
2N6257

= 30 Adc,
IIc = 20 Adc,

2N3771
2N3772
2N6257

IS
IS

Vdc

VCElsatl

IIc = 15 Adc,IB = 1.5 Adcl
IIc = 10 Adc, IS = 1.0 Adcl
IIc = B.O Adc, IB = 0.8 Adcl
IIC

-

hFE

= '15 Adc, VCE = 4.0 Vdcl
= 10 Adc, VCE = 4.0 Vdcl
=B.O Adc, VCE = 4.0 Vdcl
IIc = 30 Adc, VCE = 4.0 Vdcl
IIc = 20 Adc, VCE = 4.0 Vdcl
IIC
IIC
IIC

= 6.0 Adc)
= 4.0 Adcl

Base-Emitter On Voltage
IIc = 15 Adc, VCE = 4.0 Vdcl
IIc = 10 Adc, VCE = 4.0 Vdcl
IIc = 8.0 Adc, VCE = 4.0 Vdc)

-

4.0
4.0
4.0

-

2.7
2.2
2.2

fT

0.2

-

MHz

hfe

40

-

-

-

Vdc

VSElonl
2N3771
2N3772
2N6257

"DVNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product
IIC = 1.0 Adc, VCE = 4.0 Vdc, f test
Small-Signal Current Gain
IIc = 1.0 Adc, VCE = 4.0 Vdc, f

= 50 kHzl

= 1.0 kHzl

SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased,
t = 1.0 s (non-repetitive)

IVCE = 40 Vdcl
IVCE = 60 Vdc)

Adc

ISlb
2N3771
2N6257
2N3772

*lndlcat8s JEDEC Registered Data
111 Pulse Test: 300 I'S, Rep. Rate 60 cps.

1-105

3.75
3.75
2.5

-

..

2N3771,2N3772,2N6257

FIGURE 2 - THERMAL RESPONSE - 2N3771 , 2N3772, 2N6257

,.0

IIJ

oJ

:

«~ffi

.... N

o.
o.~r-ro.3

tz ~ o.2

~~

0=0.5

I-O.

~ po

r---: r--~.'

~~ 0.I~r«~~o.o 7P~

-.

.05
.02

pfJUl

~ ~O.B5

l:i3~
u. ffiO.O3 -

"t=:2~

0.01

.....

:!;«

~

-

DUTY CYCLE. 0 - .,1'2

I- r-:: f:::;;;F'"

8JCI.1 =r!~,8JC
8JC -0.B7SoC/W Max 2~.
o CURVES APPLY FOR POWE~=
PULSE TRAIN SHOWN
I
- f- READ TIME AT"
- TJlpltl- TC = PlpkI8JCI.I- f-

iIINGL~ PUlSE

0.02
0.0 I
0.02

0.05

II
0.1

IIIII

III
0.2

1.0

0.5

2.0

5.0

20

10

50

100

500

200

1000

2000

'. TIME lonsl

FIGURE 3 - ACTIVE-REGION SAFE OPERATING AREA - 2N3771 , 2N3772, 2N6257
40
0
0::

~ 20

....
~
«

~ 10

'"~

1.0

[:il
~

.

5.0

8

- 3.0

L1 LJ

,, , "
,

i'

11
i l II
- 2r 37

2N3772.2N62S7Idcl

-'I'

dc'

I
~.....

~"

Hii

-..::~~

II II

1.Orn.

indicate.
Figure 3 is based upon JEOEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided
T J(pkl
2IKf>C. T J(pk) may ba calculated from the data of
Figure 2. Using data of Figure 2 and the pulse power limits of
Figure 3, TJ(pkl will be found to be le.,thanTJ(max) for pulse

100ml

<

-,1\
,~

+= f-~

2N3771. 2N62S~
I 2N3772
10
20 30

PULSE CURVES APPLY
FOR ALL DEVICES
5.0 7.0
2.0 3.0

There are two limitations on the power handling abilitv of 8

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran·
sistor that must be observed for reliable operation; i.e .• the transistor must not be subjected to greater dissipation than the curves

I

TC' 25°C
BONDING WIRE LIMITED
- - - - - THERMAllY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

I I I

ii

"

50

70 100

widths of 1 ms and less. When using Motorola transistors, it is
permissible to increase the pulse power limits until limited by
TJ(max)·

VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

FIGURE 4 - SWITCHING TIME TEST CIRCUIT

FIGURE 5 - TURN-QN TIME

VCC
+30 V

10

5.0

I 25"'1

~~
--

EI~R~:~V
TJ" 25°C

VSEI.III" 5.0· V

2.0

+~] --1--1

!.

1.0
0.5

;::

-9.0 V

5'

DUT~ri:~~L~:~.o%

SCOPE

RB

-=

-- 0.2

0,

-

r--

-

'r- f- I--

O. I
-4V

'd:::

0.05

RB AND RC ARE VARIED TQOBTAIN DESIRED CURRENT LEVELS

0, MUST BE FAST RECOVERY TYPE ••g

0.0 1
0.3

MBDS300 USED ABOVE IB ~IOO rnA
MSD6100 USED BELOW IB ~IOD mA

0.5 0.7 1.0

2.0

3.0

5.0 7.0

Ie. COLLECTOR CURRENT IAMPI

1-106

F~

0.02
10

20

30

2N3771,2N3772,2N6257

FIGURE 7 - CAPACITANCE

FIGURE 6 - TURN-oFF TIME
100

2000

5D

VCC = 3DV
ICIIB = lD
IBI = IB2
TJ = 25 0 C

2D

.
...

1--"

--'-

J

I.D
D.5

f;;o:

If

1.D

2.D

"

Cob

.....

~ 500

,,'

.....
D.5

C,b

;t

D.2
D.l
D.3

I

~1000 r.....

z
~ 700
i3

5.D

;:: 2.D

TJ = 25°C

...

lD
]

r--

3.D

30D

.....
S.D

7.0

lD

20

200 01

30

0.2

0.5

IC. COLLECTOR CURRENTJAMP)

SOD
3DD

.
'"
i"

200

i

20

T~C

l-

"'"

VCE=4.0V

lDD
7D
50
3D

-

-5SoC

......

...

,--.....;

ffi
::

~

.......

1.6

0.8

~_

0.4

8

ul

1.0

2.0

3.0

5.0 7.0

2D

50

lDO

10

20

II

"

3D

IC. COLLECTOR CURRENT (AMP)

TJ=2SOC

IDA

S.OA

20A

1.2

!
>

0.5 0.7

II III
IC=2.0A

"

,

o

......

10
7.0
5.0
0.3

?'"

'"
~
o

I""'-

2.0

!:;
UJ

250 C ......

lD

FIGURE 9 - COLLECTOR SATURATION REGION
c;;

z

5.0

2.0

VR. REVERSE VOLTAGE (VOLTS)

FIGURE 8 - DC CURRENT GAIN

-

1.0

t

~

0
0.01

0.02

0.05

0.1

0.2

0.5

1.0

IC. COLLECTOR CURRENT (AMP)

1-107

2.0

5.0

10

NPN

PNP

®

2N3773 2N6609

MOTOROLA

16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS

The 2N3773 and 2N6609 are ,PowerBase power transistors designed for high power audio, disk head positioners and other linear
applications.' These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

•

140 VOLTS
150 WATTS

High Safe Operating Area (100% Tested)
150W@100V

•

Completely Characterized for Linear Operation

•

High DC Current Gain and Low Saturation Voltage
hfe = 15 (Min) @8A, 4 V'
VCE(sat) = 1.4 V (Max) @IC= 8 A, IB = 0.8 A

•

For Low Distortion Complementary Designs

lr~
r III
E

SEATlNt-~

0

K

i

PLANE

I---FI---J-

"MAXIMUM RATINGS
Ratina
Collector Emitter Voltage
Collector-Emitter Voltage
Coliector·Ba.. Voltage
Emltter-Ba.. Voltage
Collector Current - Continuous
-Peek (1)

Symbol

Unit
Vdc
Vdc
Vdc
Vdc
Adc

V.lul
140
160
160
7
16

VCEO
VCEX
VCBO
VEBO
IC

30

Blse Cu"ent - Continuous

IB

-Peak (1)
Total Power Dillipation @ TC = 25 0 C
Derate above 25 0 C
Operating and Storage Junction

Po
TJ. Tst9

Watts
wf'c
°c

Temperature Range

THERMAL CHARACTERISTICS
Ch.recteristic
Thermal Resistance, Junction to Case

STYLE 1:
PIN 1. 8ASE
2. EMITTER
CASE: COLLECTOR

Adc

4
15
150
0.855
-65 to +200

DIM
A
8

I

Symbol
RUC

"Indicate. JEDEC Registerad Data
(I) Pulse Test: Pulse Width = 5ms. Duty Cvcle < 10%.

I

Max
1.17

I

Unit

°CIW

0
E

F
H
J
K
Q

R

MILLIMETERS
MIN MAX

INCHES
MIN
MAX

-

-

39.37
1.550
21.08
- 0.830
7.62 0.250 0.300
1.09 0.039 0.043
0.135
- 3.43
29.90 30.40 1.177 1.197
O.
11.18 0.420 0.440
5,33
5.bS 0.210 0.220
16.64 17.15 0.655 0.875
11.18 12.19 0.440 0.480
3.84
4.09 0.151 0.161
- 28.87 - 1.050
Collector connected to case.
CASE 11·01
6.3
0.99

(TO·3)
..

2N3773 NPN/2N6609 PNP

ELECTRICAL CHARACTERIST.ICS (TC = 25 0 C unl... otherwi .. noted.)
Characteristic
OFF CHARACTERISTICS (I)
·Coliector·Eminer Breakdown Voltage
(lC = 0.2 Adc. IB = 0)
'CoIlector-Eminar Sustaining Voltage
(lc = 0.1 Adc. VBE(off) = 1.5 Vdc. RBE = 100 Ohms)

I

Collector-Emitter Sustaining Voltage

(lC

=0.2 Adc. RBE •

Symbol

Min

Max

Unit

VCEO(.us)

140

-

Vdc

VCEX(sus)

160

-

Vdc

VCER(sus)

150

-

100 Ohms)

·Collector Cutoff Current
(VCE = 120 Vdc. IB = 0)

ICEO

·Collector Cutoff Current
(VCE = 140 Vdc. VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc. VBE(off) = 1.5 Vdc. TC -150 oC)

ICEX

-

10

-

2
10
2

mAdc

5

mAdc

mAdc

-

Collector Cutoff Current
(VCB = 140 Vdc.IE = 0)

ICBO

-emitter Cutoff CUrrent

-

lEBO

(VBE - 7 Vdc. IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
'(lC - 8 Adc. VCE = 4 Vdc)
(lc = 16 Adc. VCE = 4 Vdc)

hFE
15
5

Collector-Emlner Saturation Voltage
'(lC - 8 Adc. IB = 800 mAde)
(lC = 16 Adc. IS = 3.2 Adc)
'Sase-Emitter On Voltage
(lC = 8 Adc. VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS

VCE(..d

-

60

Vdc

VBE(on)

-

1.4
4
2.2

Ihfe l

4

-

-

hfe

40

-

-

-

Magnitude of Common·Emitter

Vdc
mAdc

Vdc

Small-Signal. Short-CIrcuit. Forward Current Transfer Ratio
(lC = 1 A. f • 50 kHz)
'Small-Signal Current Gain
(lC = 1 Adc. VCE = 4 Vdc. f = 1 kHz)
SECOND SREAKDOWN-CHAI!ACTERISTICS
Second Breakdown Collector Current with Ba.. Forward Slased
t = 1 • (non-repetitive). VCE = 100 V. Sae Figure 12
11) Pul .. Test: Pulse Width = 300 ,..•• Duty Cycle .. 2%.
'Indicates JEDEC Registered Data

1-109

2N3773 NPN/2N6609 PNP

NPN

PNP

FIGURE 1 - DC CURRENT GAIN

300
20

o 250C r--+-

,;;.;.--r -I

z

;;: 10

'"...

o

i

70

1l

0

'"
Q

:#

-

150°C

_~S50C

50

FIGURE 2 - DC CURRENT GAIN

300
150°C

200

.........

r--'250C

z

r-: r--.

~ 100

VCE = 4 V

~

20

j

~~

~

30

'"

20

~

10

-55°C

~

VCE =4 V

10

7. 0
7.0
5.0
0.2

5.0
0.2

0.3

0.5

0.7

2.0

1.0

3.0

5.0 7.0

10

20

IC. COLLECTOR CURRENT (AMPS)

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

20

IC. COLLECTOR CURRENT (AMPS)

FIGURE 4 - COLLECTOR SATURATION REGION

FIGURE 3 - COLLECTOR SATURATION REGION

g 2.0
~

I III

0

+.++

6

'"~"'

2

~

II \1

l ll...

Ie =4A

~ 1.6 HI-+IC 4 A+--+--1+-+-+++-l-t-lH--II-+--t--1

~

I II

HHI~I~II-+~+++H~-r~~

1.2 HI-+++++-+-+l-I-+-H-+-If+I'l~
,\+-+-+--1
IC"SA
I "

\

S

~8

4

0.4

0.2

0.3

0.5

0.7

2.0

1.0

IC=BA

r-

0.2

lB. BASE CURRENT (AMPS)

FIGURE 5 - "ON" VOLTAGE

g
'"~
"'
'"

.

'">>"

O.B

lJ

2.0

/J 1/

1.6

IC/IB= 10

'f'
VBEI.')

J
'II

.....-:t::::

25°C
~

IS00C

'/

I-

~
'"~
'""'
:;
'"
'">

1.2

o

0.2

VCE(sat)

0.5 0.7

1.0

2.0

3.0

2.0

1.0

3.0

5.0

I I10

5.0 7.0

r--

150°C

0.4

0.2

20

IC. COLLECTOR CURRENT (AMPS)

/I
I
I
I

VBE(sa.)

O.S r--

>"

~250C

1
0.3

0.7

IcllB = 10

25°C

150°C
0.4

0.5

FIGURE 6 - "ON" VOLTAGE

1.2

:;

0.3

lB. BASE CURRENT lAMPS)

2.0

1.6

r--_

~

-

Te = 25°C
0
0.05 0.07 0.1

3.0

!"-

\

~

~ 0.BHM-++++_+-+~\t--+-H-hICH="tl_6_A+-t-_ _+i--""'1

I~ L111::-"

0.3

-...-----

~

~
1500C

J.1

k:::: ~I

0.5 0.7

1.0

2.0

3.0

11- -

j5

VCE(sat)

II

5.0 7.0

10

IC. COLLECTOR CURRENT (AMPS)

1-110

I

II

20

2N3773 NPN/2N6609 PNP

III
FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA

30
20

...
......

~

10

a::;:
~

I-

zw

1.0

a::

0.5

Q

I-

u

w

....I
....I
Q

...

....

I.....

......

5.0
3.0
2.0

a::
a::

=>
u

1"'.... F....

.....

....

~

10!'S40 ItS

100"s=
200/LS=
..... 1.0ms100 ms

de

I'

~"
1\..'-

500 ms
0.3
0.2

BONDING WIRE LIMIT
r- THERMAL LIMIT
@TCASE = 25 DC, SINGLE PULSE
SECOND BREAKDOWN II IT

-,

0.1
c.l
- 0.05

u

0.03

5.0

3.0

7.0

10

20

30

50

70

200

100

300

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

There are two limitations on the powerhandling abilitv of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation: I.e., the tran-

sistor must not be subjected to greater dissipation than the curves
indicate.

The data of Figure 7 i. based on TJ(pk)
for duty cycle. to 10% provided T J(pk)

~ 80

'"
~
~

I"""

"

60

~
c

:--...

"-

40

"'

'"

'"
~

20

40

At high case

be handled to values less than the limitations imposed by second
breakdown.

~
THERMAL
DERATING

'"z

< 2000 C.

temperatures, thermal limitations will reduce the power that can

FIGURE 8 - POWER DERATING

100

=2000 C;TC is variable

depending on conditions. Second breakdown pulse limits are valid

80

120

"

"" ""

TC. CASE TEMPERATURE (DC)

1-111

160

"

200

2N3789 thru 2N3792
MOTOROLA

SILICON PNP POWER TRANSISTORS

10 AMPERE

· .. designed for medium-speed switching and amplifier applications.
These devices feature:

POWER TRANSISTORS
PNPSILICON
60-80 VOLTS
150 WATTS

•

Total Switching Time@3 A'" 1 /JS (typ)

•

Two Gain Ranges:
hFE (min) = 15 and 30 @ 3 A (2N3789, 2N3790)
25 and 50 @ 1 A (2N3791, 2N3792)

=0.5 V (typ) @ IC =4.0 A,IS =0.4 A

•

Low VCE(sat)

•

Excellent Safe Area Limits

•

Complementary NPN types available - 2N3713 thru 2N3716

MAXIMUM RATINGS

Collector-B... Voltage
Collector-Emitter Voltage
Emltter·Base Voltage
Collector Current IContinuous)

VCB
VCEO
VEe
Ie
IB

Base Current (Continuous)

Po

Power Dissipation
Thermal Resitance

2N3790
2N3792
80
80
7.0
10
4.0
150
1.17

2N3789
2N3791
60
60
7.0
10
4.Q
150
1.17

Symbol

Characteristic

8JC

Unit
Volts
Volts
Volts
Amps

Amps
Watts
oem

Junction Operating and

Storage Temperature Range

-65 to +200

TJ, T stg

°e

NOTES:
I. OIMENSIONS Q AND V ARE DATUMS.
2.
IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE 0:

m

FIGURE 1 - POWER·TEMPERATURE DERATING CURVE
160

@
~
~

!
ffi

~

.e

I

140

t

1.·13(O.005)@ IT Iv@1

FOR LEADS:

It \,.1310.D05)@T \ vel o@\

............. f....

120

............

100

4. DIMENSIONS AND TOLERANCES PER
ANSI YI4.5, 1973.

.............

80

...............

60

'-.......

40
20

DIM
A
S

'-....

C

..............
25

50

75

100

125

150

175

200

Te. CASE TEMPERATURE 1°C)

D
E
F
G
H
J

K

Safe Area Limits are indicated by Figures 15, 16. Both limits are applicable and
must be observed.

Q

R
U
V

MIN

MAX
39.37
21.08
6.35
7.62
0.97
1.09
1.4
1.78
30.15 SSC
10.92 SSC
5.46 SSC
16.S9 BSC
11.18 12.19
3.81
4.19
26.67
4.83
5.33
3.81
4.19
CASE '·05

1-112

2N3789 thru 2N3792

ELECTRICAL CHARACTERISTICS

(Tc

III

=25"C unless otherwise noted)
Symbol

Characteristic
Collector-Emitter Sustaining Voltage*

Min

Max

60
60

-

2N3789,2N3791
2N3790,2N3792

(lC = 200 mAde, la = 0)
COllector-Emmiter Cutoff Current

ICEX
2N3789,2N3791
2N3790, 2N3792
2N3789, 2N3791
2N3790, 2N3792

(VCE = 60 Vde, V8E = -1.5 Vde)
(VCE = 60 Vde, VaE = -1.5 Vde)
(VCE = 60 Vde, VaE = -1.5 Vde, TC'~ 15O'\::)
(VCE = 80 Vde, VaE = -1.5 Vde, TC = 150'\::)
Emitter-Base Cutoff Current

mAde

-

I
I
5
5

-

5

mAde

IEaO
All Types

(VE8 = 7 Vde)
DC Current Gain*

-

hFE'
2N3 789, 2N3790
2N3791,2N3792
2N3789,2N3790
2N3791,2N3792

(lC = lAde, VCE = 2 Vde)
(lC = 3 Ade, VCE = 2 Vdc)
Collector-Emitter Saturation Voltage-

25
50
15
30

90
180

Vde

VCE(satl'

(lC = 4 Adc, la = 0.4 Ade)
(lc = 5 Ade, la = 0.5 Adc)

2N3789, 2N3790
2N3791,2N3792

Base-Emitter On Voltage*

-

-

1.0
1.0

-

2.0
1.8
4.0

4

-

Vde

VaE(on)'
2N3789,2N3790
2N3791,2N3792
All Types

(lC = 5 A, VCE = 2 Vdc)
(lc = 10 Ade, VCE = 4 Vde)
Current Gain - Bandwidth Product

·Sweep Test: 1/2 sine wave cvcle

@

o_

MHz

IT
All Types

(VeE = 10 Vde, IC = 0.5 Ade, 1=1 MHz)

Unit
Vde

VCEO(sus)'

60 cps.

, FIGURE 2 - TYPICAL SWITCHING TIMES AND TEST CIRCUIT

1.

VALUES SHOWN FOR

r\\.
O. 7

5

O.3

le-5.\,1,,- -1,,-0.5A
f - 150 cps. DUTY CYCLE - 2%

...........

r--

'\

-3D V

"r-...~

"'

'\ ~,

lr i

'r-.

~~!!I~~/I1

6!l

t.

4W

r"\

~

..........

--;;---. .....

25

O.2
0.1

0.2

0.3

0.5

0.7

1.0

2.0

\

\.

~

"""-3.0

5.0

Ie. COUECTOR CURRENT IAMPSl

1-113

)

2N3789 thru 2N3792

FIGURE 3 - CURRENT GAIN VARIATIONS

200

z

1'iI

2113789. 2N3790

100 ~ TJ

+IWC

TJ

+2So C

70

5
~

so ~~-40°C

'1

30

Ve£~2V
I

II IIII

FE

I. + ICBO

h

-

I

C

CIO

.::--..,
~ t::....

r--:::: ~

g

"~

20

TJ~

+2SoC

~~

~~,

10
0.01

0.02

003

0.05

0.07

0.2

0.1

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

Ie. COlLECTOR CURRENT lAMPS)
FIGURE 4 - CURRENT GAIN VARIATIONS

---- ----

so0 _2N3791. 2N3792
300

TJ

+lWC

200

TJ

+2S OC

.......

V~£~2t
hFE

~

,

=

1,+ leBO

l""'-

TJ - -40°C

I I

)0....

0
0

I

Ie - ICBO

::.....

0

.........;:

TJ

+2SOC

TJ

+1J50C

b>"-r\-

~~

0

~~

0
I0

0.01

0.02

0.03

0.05

0.07

0.1

0.2
0.3
0.5
Ie. COLLECTOR CURRENT lAMPS)

r--r--r---

=i

ALL.TYPES

TJ~+2SOC

.

II
II

+4.0

r--- _

...- io"""

0.1

..d ~
fl'

0.3

10

~5~2~~p!r~~ro;!;t~~~T~ _250C)

~~ !p~~~~i:::t~~~:!~i~~:rature range of interest. --''''I----:~~-!
TJI+ 100°C to + 17S0C)r""'~:....l::s:3"'f--t--1

~fl,~IO

10 ~

V

-~

VeE!wt)

0.2

7.0

Use appropriate 9v for voltage of interest.

0.4

o

5.0

To compute saturation voltages

Ve£~2;:l

_,VBEIM't),

3.0

+S.O,.--~--r-~-_--'--,----..--,----,----,

fl' '" le/l,lfORCED GAIN)

r--r--- -"V"

2.0

1.0

FIGURE 6 - TEMPERATURE COEFFICIENTS

FIGURE 5 - SATURATION VOLTAGES

2.4

0.7

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

Ie. COLLECTOR CURRENT lAMPS)

-3.0~0--f;;---::':--t;:--+:'--;';;---,~~\;--t8.0;:--;;9~.0---710'
Ie. COLLECTOR CURRENT lAMPS)

1-114

2N3789 thru 2N3792

SAFE OPERATING AREAS

FIGURE 7 - 2N3789.2N3791

FIGURE 8 -

II.

2N3790.2N3792

10

..... nDC to 5 m,

i"'\.\ \

'\. \\
~

1m,

"

'ffi"

~

1.0

~

07

8

0.5

::::

.2

500 fl'

-

250 fl'

-

\ \ < 150
\,"-

,
fl

DC to 5 m,

¥--

-"-.
" "'\. '"'\.

\

\

!

\ 750fl'

\

-

'" K\~\1\\

k\\I\
~ ~\

~

\'

\

Ims>

'\,

'\

'\.
'\

1",\\

03
#0.

02

0.1

500;;:s=
-2~

o

20

10

30

40

50

70

60

20

10

~

~

30

40

50

60

70

80

90

VeE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

(Duty cycle of the excursions make no significant change in
these safe areas.) To insure operation below the maximum T"
the power·temperature derating curve must be observed for
both steady state and pulse power conditions,

The Safe Operating Area Curves indicate Ie - VeE limits
below which the device will not go into secondary breakdown,
Collector load lines for specific circuits must fall within the ap'
plicable Safe Area to avoid causing a collector·emitter short,

FIGURE 10 - COLLECTOR CUT·OFF CURRENT versus
BASE·EMITTER RESISTANCE

FIGURE 9 -CUT.()FF REGION TRANSCONDUCTANCE
10 0

20

0

10

0

l

~

a
~

VeE

5.0

VCEO 20V

~ 2.0

0

~

!

5

o. 1

8 o. 1

:,.....-

TJ~+1WC

0.0 I
+0.6

1.0

I

/

TJ~+1WC/

0.5
0.2

TJ~+100°C/

J1 O. 1

00 5
001

.....-

VeE = VCEO -20 V

0.05
TJ - + IOO°C

REVERSE
+0.4

'"

+01

0.02

FORWARD
-0.1

-0.4

V", BASE·EMITIER VOLTAGE IVOLTS)

1-115

0.0 1
1.0

10
100
10K
lK
ROE, EXTERNAL BASE·EMITTER RESISTANCE IOHMS)

lOOK

/

2N'39,02 NPN

®

MOTOROLA

3.5 AMPERE
HIGH VOLTAGE NPN SILICON TRANSISTORS

POWER TRANSISTORS
NPN SILICON

• .• designed for use in high-voltage inverters, converters, switching
regulators and line operated amplifiers_

400 VOLTS
100 WATTS

•

High Collector-Emitter Voltage - VCEX = 700 Vdc

•

Excellent DC Current Gain hFE
10 (Min) @ IC 2.5 Adc

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 0.8 Vdc (Max).@ IC = 1.0 Adc

=

=

"MAXIMUM RATINGS
Symbol

2N39C)2

Unit

Collector-Emitter Voltage

Rating

VeEO

400

Vdc

Collector-Emitter Voltage

VeEX

700

Vdc

VEa

5.0
3_5

Vdc

Emitter-Base Voltage
Collector ~urrent - Conti~uous

Ie

Adc

Sase Current

la

2.0

Adc

Total Device Dissipation @I T C = 75°C
Derate above 75°C

Po

100
1.33

Watts
w/oe

TJ

-65 to +150

°e

Tstg

-65 to +200

°e

Operating Junction Temperature Range
Storage Temperature Range

JE"~'

t.~i
r-----

F-

LJ~

Q~~/v 1
H
:lf~IR
+

~HERMAL CHARACTERISTICS
Symbol

I

Max

Unit

Thermal Resistance, Junction to Case

8Je

I

0.75

°e/w

·1 ndicates JE DEC Registered Data

100

~

80

z

60

~
0

"'"I'.

1.·13(0.005)e IT Ive I
FOR LEADS:

.~

."

~

2i 40

'"~

~

DIM
A
B
C
D
E
F

~
I'.

~ 20

~

80

NOTES:
1. DIMENSIONS 0 AND V ARE DATUMS.
2. [JJ IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE 0:

I t 1.·13(0.005)e T I vel Del
4. DIMENSIONS AND TOLERANCES PER
ANSI YI4.5, 1973.

iii

0
60

lGJ

u

It

FIGURE I_POwER DERATING

'"

~-/

!

Characteristic

100

120

"~
140

G
H

J
K
Q

160

R
U

Te, eASETEMPERATURE (OC)

v

MILLIMETERS
MIN MAX
39.37
21.0B
6.35 7,62
0.97 1.09
1.4
1.7B
30.15 Bse
10.92 BSC
5.46 Bse
16.89 Bse
11.18 12.19
3.81 4.19
26.67
4.83 5.33
3.81
4.19
CASE '·05

1-116

INCHES
MIN MAX
1.550
0.830
0,250 0,300
0.038 0,043
0,055 0.070
1.187 Bse
0.430 SSC
0.215 Bse
0.665 BSC
0.440 0.480
0.150 0.165
1050
0.190 0.210
0.150 0.165

2N3902

l1li

*ELECTRICAL CHARACTERISTICS (TC = 26°C unle•• otherwi.e noted)
Symbol

Characteristic

Min

Max

325

-

0.25

-

-

2.5
0.5

-

5.0

30
10

90

-

0.8

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

(lC

= 100 mAde, IS =0)

Collector Cutoff Current

(VCE

= 5.0 Vdc,

IC

mAde

ICEX

= 700 Vdc, VES(off) = 1.5 Vdc)
= 400 Vdc, VEB(off) = 1.5 Vdc, TC = 125°C)

Emitter Cutoff Current

(VBE

mAde

ICEO

= 400 Vde, IS =0)

Collector Cutoff Current

(VCE
(VCE

Vde

VCEO(sus)

(See Figure 12)

mAde

IESO

=0)

ON CHARACTERISTICS (1)
DC Current Gain

(lc
(lC

-

hFE

= 1.0 Ade, V CE = 5.0 Vdc)
= 2.5 Adc, V CE = 5.0 Vdc)

Collector-Emitter Saturation Voltage

Vdc

VCE(sat)

(lc = 1.0 Ade, IS = 0.1 Ade)
(lC = 2.5 Ade, IB - 0.5 Ade)

-

Base-Emitter Saturation Voltage

2.5
Vde

VBE(sat)

(lC = 1.0 Ade, IS - 0.1 Ade)
(lC 2.5 Adc, IS 0.5 Ade)

-

1.5
2.0

-

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 0.2 Ade, VCE = 10 Vdc)
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width .. 3001's, Duty Cycle .. 2.0%.

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - TURN-ON TIME
2. 0

:r@ltCcl • b5 JdC
I

Ic/1B'10
TJ' 25°C

""-

1.01"-

- -

O. 7

:!
w

O. 5

"-

...; 0.3

L

,.

>=
Rl 50
RB
12

6.0 V

i'.

.......

-I'dl@lIVfBIOff) • 5.0 Vdc

Rl
115

0.2

VCC=12SV
VBS"

lill

O. 1

0.05
5.0% Duty Cvcle
tr'" lOOns

II II

0.1

I'..

I

0.2

I

I

0.3

I'-- .....
0.5

1.0

IC,COLLECTOR CURRENT lAMP)

1-117

2.0

3.0

5.0

/

I

2N3902

FIGURE 4 - THERMAL RESPONSE

.
~

0.7

iii

0.5

~ ~

0.3
0.2

1.0

~

> z

...E~.,
:t

~ 0.1
~ ;;, 0.01

"

i~

t-

~ ~ 0.05
~~

g; Iz

lIa

~0=0.5

..'\,.

0.03

"'

0.02

BJC(I) = ,(I) BJC
BJC = 0.75"CIW Max
o CURVES APPLY FOR powfRf:::
PULSE TRAIN SHOWN
tREAOTIMEATtl

==r:

0.2
0.1
0.05
0.02
0.01
SINGLE PULSE

I

0.01
0.02 0.03

0.05

0.1

0.2

0.3

pEfUl

r:

TJ(pk) - TC = P(pk) BJC(t)
I I I I I II111

0.5

1.0

2.0

IIIII
3.0

5.0

10

t'~j

f:::
I

t-

DUTY CYCLE, D = I11t2

I
20

30

100

50

I
200

300

500

1000

2000

t, TIME (m,)

FIGURE 5 -ACTIVE-REGION SAFE-OPERATING AREA
10
I=TJ -150 oe

- -

5.0

-~<
~

2.0

~

0:

:=
~

~

-- - -

~ 0.5

,

Second Jreakdown limitl

1.0 _

.'Z5 m, f--

"'-

~.Oms

There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown. Safe

operating area curves indicate Ie-VeE limits of the transistor that

Bonding Wire Limit

______ Thermal Limit@Tc=750 C
Curves Apply Below Rated BVCEO

0.2

must be observed for reliable operation; i.e., the transistor must not

~~ "'-

be subjected to greater dissipation than the curves indicate.
The data of Figure S is based on TJ(pk) = lS00C; TC is variable

ms

depending on conditions. Pulse curves are valid for duty cycles of
10% provided T Jlpk) S 15o"C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by secondary breakdown.

de""

O. 1

8~0.05
0.02
0.0 1
5.0

20

10

50

100

500

200

VeE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

FIGURE 6 - TURN-OFF TIME
5.0

Tr

--

-

2.0
1.0

"i
;;:; 0.5

'".,

;::

FIGURE 7 - CAPACITANCE

IC/IBI 10ICIIB = 2.0- - -

250 C

ts

-

~

1000

'"z

~ 300

~200

tf@lVCC=125~

II

-

r--

r--

-

~

iJ=12JO~

C1b

""'"

r--

"'-'00

'l"-

--=Ob

i.--

o. I
0.05
0.05

2000

u:~ 500

~

0.2

3000

50
0.1

0.2

0.5

1.0

2.0

30
1.0

5.0

2.0

3.0

5.0

10

20

30

VR, REVERSE VOLTAGE (VOLTS)

IC,COLLECTOR CURRENT (AMP)

1-118

50

100

2N3902

FIGURE 9 - "ON" VOLTAGES

FIGURE 8 - DC CURRENT GAIN

2. 0

100

IITI

Tr 150°C

0
0

"

........ ~ VCE ' 5.0 Vdc

V .....

0

~

..... 25°C

0

V

0

k- ~

~

..........

~

I"~

VBE(sat) @lcIIB' 10

~

O.S

0.4

0.3

0.5

2.0

1.0

3.0

0.2

0.1

IC. COLLECTOR CURRENT (AMP)

~

'"

~

8
;!

to 0

10

==

~125~C

3.0

5.0

..§ +1.5
~
~

I

i

-

+1.0

TJ' -650C to 1500C

<3

+D.

5

r--750C

I-

~ -1. 0

l=,.- ~25~C

1.0
-0.4

REVERSE

~

FORWARD

-0.2

+0.2

i---

~ -2.0

-2.5
0.005

+D.6

+0.4

-1. 5

I-

VCE - 200 Vdc-

II J..W..-P'
II
...... V

8V FOR VCE(sat)
eAPPUESFOR IC/IS

5.0

1

l- F"

>

TJ.1500C"",1\'I

I

rr
......

1........ 1

to

-55°C

7.0

JCEI(sa~ lUIIB' 1~

1. 2

w

~

1

II

I II

Tp250C
1. 6

I"

0.01

0.02

0.05

0.1

-

0.2

8V FiR V1B\

0.5

1.0

2.0

I5.0

IC. COLLECTOR CURRENT (AMP)

VBE. BASE EMITTER VOLTAGE (VOLTS)

FIGURE 12 - COLLECTOR-EMITTER SUSTAINING VOLTAGE TEST CIRCUITS AND LOAD LINES
TESHI

50 0

;; 400

.g
I-

~

30 0

~

'"c

~

8

~

20

0

""'\

>-- , -

VCEO(sus) IS ACCEPTABLE WHEN
VCE;>RATEO V LT GE Ic'100mA

J\IB~IIIII-'-_'" ---'~--o
1.0

100
I

y

I
I

0
100

200

300

400

500

VBB

VCE. COLLECTOR·EMITTERVOLTAGE (VOLTS)

1-119

J

2N4231A thru 2N4233A NPN
2N6312 thru 2N6314 PNP

®

COMPLEMENTARY SILICON
MEDIUM-POWER TRANSISTORS

5.0 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

designed for general-purpose power amplifier and switching
applications_
•

MOTOROLA

40-60-80 VOLTS
75 WATTS

Low Collector-Emitter Saturation VoltageVCE(sat) = 0.7 Vdc (Max) @ IC = 1.5 Adc

•

Low Leakage Current - ICEX = 0.1 mAdc (Max)

•

Excellent DC Current Gain - hFE = 25-100@ IC = 1.5 Adc

•

High Current Gain - Bandwidth Producttr = 4.0 MHz @ IC = 0.25 Adc

*MAXIMUM RATINGS
Rating

Symbol

2N4231A
2N6312

2N4232A
2N6313

2N4233A
2N6314

Unit

Collector-Emitter Voltage

VCEO

40 .

60

80

Vdc

Collector-Base Voltage

VCB

40

60

80

Vdc

Emitter-~ase

VEB

Voltage

Collector Current Continuous
Peak

IC

Base Current

IB

_5.0_

.

Vdc
Adc

.

~5.0~

Total Device Dissipation @
TC = 25°C

--u--

2.0_

- Adc

.

..

-PO

75
_0.43_
_ _ _ -65 to +200 _____

Derate above 25°C
Operating and Storage
Junction Temperature

10

.

TJ.Tstg

Watts
W/oC
°c

Range

---F--

STYLE 1:
PIN 1. BASE
2. EMITTER

• THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
-Indicates JEDEC registered data. (All 'Values meet or exceed JEOEC registered data).

FIGURE 1 - POWER DERATING

s

80

~

r-- r-....
70

i

60

<>

50

ill
c

40

z

::>=
'"3:

~

J?

"

......

" "'""" ""'"

30
20
10

o
o

25

50

75

100

125

TC. CASE TEMPERATURE IOC)

" "'"

150

175

200

1-120

MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
B 11.94 12.70 0.470 0.500
C
6.35 8.64 0.250 0.340
D
0.71 0.86 0.028 0.034
E
1.27 1.91 0.050 0.Q15
F 24.33 24.43
0.958 0.962
G 4.83 5.33 0.190 0.210
H 2.41
2.67 0.095 0.105
J 14.48 14.99 0.570 0.590
K 9.14
0.360
P
1.27
0.050
Q
3.61
3.86 0.142 0.152
S
8.89
- 0.350
T
3.68
- 0.145
U
15.75
0.620
All JEDEC D,menSlons and and Notes Apply.
.~

CASE 80-02
TO-68

2N4231A thru 2N4233A NPN, 2N6312 thru 2N6314 PNP

-

ELECTRICAL CHARACTERISTICS ITC '" 2SoC unless otherwISe noted)

I

Characteristic

Min

Symbol

'OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

(Ie'" 100 mAde, IS

VCEO(sus)

Collector Cutoff Current

mAde

ICEO

10
1.0

Collector Cutoff Current

mAde

ICEX

VeE/off) = 1.5 Vdc)
VeEloff) = 1 5 Vdc)
VeEtoffl = 1 5 Vdc,

2N4231A,2N6312
2N4232A,2N6313
2N4233A.2N6314
2N4231A.2N6312

0.1
0.1
0.1
1.0

VSEloff) = 1.5 Vdc,

2N4232A. 2N6313

1.0

VSE/off) = 1.5 Vdc,

2N4233A.2N6314

1.0

VSEloff) = 1.5 Vdcl

Collector Cutoff Current
(Vce '" 40 Vdc, Ie ~ 0)
(VeB ~ 60 Vdc, Ie '" 01
(Vce ~ 80 Vdc, Ie '" 0)

III

1.0

2N4231A.2N6312
2N4232A. 2N6313
2N4233A.2N6314

(VeE'" 30 Vdc, Ie = OJ
(VeE = 50 Vdc. Ie = 0)
(VeE = 70 Vdc, 18 = 0)
(VeE = 40 Vdc,
(VeE = 60 Vdc,
(VeE'" 80 Vdc.
(VeE'" 40 Vdc,
TC = 1S0oC)
(VeE = 60 Vdc.
TC'" 150°C)
(VeE = 80 Vdc,
TC ~ 150°C)

Vde

40
60
80

2N4231A,2N6312
2N4232A,2N6313
2N4~33A, 2N6314

= 0)

Unit

mAde

ICBO

0.05
0.05
0.05

2N4231A,2N6312
2N4232A,2N6313
2N4233A,2N6314

Emitter Cutoff Current
(VeE'" 5.0 Vdc, IC ~ 0)

mAOC

E80
05

ON CHARACTERISTICS
DC Current Gam (1)
"(lc ~ 05Adc, VCE
"(lc'" 1 5 Adc, VCE
"tic'" 3 0 Adc, VeE
(lc'" 5.0 Adc, VCE

hFE
40
25
10

'" 20VdcJ
"" 2.0 Vdc)
~ 2 0 Vdc)
= 4 a Vdc)

100

4.0

·Collector·Emltter Saturation Voltage (1)
(Ie'" 1.5 Adc, 18 '" 0.15 AdcJ
(Ie = 3.0 Adc, IS = 0.3 AdcJ
(lc"" 5.0 Adc, 18 "" 1.25 Adc)

VCEtsad

"Base·Emltter· On Voltage (1)
(Ie'" 1 5 Adc, VCE = 2 0 VdcJ

VBElon)

Vdc
0.7
2.0
4.0

Vdc
1.4

'DYNAMIC CHARACTERISTICS
Current-Gam - Sandwldth Product
(lC '" 0.5 Adc, VCE '" 10 Vdc, f test "" 1.0 MHz)

MH,

fT
4.0

Output Capacitance
(VCB'" 10 Vdc, Ie = 0, f = 0.1 MHz)

Cob

Small·Slgnal Current Gain
(Ie"" 0 5 Adc, VCE '" 10 Vdc, f'" 1.0 kHz)

hf.

300
20

"I ndtcates JEDEe registered data.
(1) Pulse Test Pulse Width ~ 3001-'5, Duty Cycle

:EO:;;

2.0%.

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
APPROXnTURN.ON
PULSE
+11 V ,
'

2.0

.,

---;
I

TJ'25"C I
IlelIB"O

1.0
RS

II

Vin

FIGURE 3 - TURN "ON" TIME

VCCo-_\I\o--,

0.7
o. 5

Cjd« C,b

o ,I
II

'r@VCC'IOV=

30V

-

]. 0.3

-4.0 V

APPRO X
+11 V

'r@VCC

~

., <15n,
100 <12 <500.,
13< 15 n,

-

0.2

>=
O. I
0.07
0.05

OUTY CYCLE ~ 2.0%
FOR td and tr, 01

IS OISCONNECTED
12
FOR PNPTEST CIRCUIT.
TURN·OFF PULSE
REVERSE ALL POLARITIES AND 01
FOR CURVES OF FIGURES 3 AND 6. RS AND RC
ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.0 3

-

0.0 2
0.05 0.07 0.1

:;:;~

-"=.......-:

Id@VBE(off)'O

2N4231A Ihru 2N4233A (NPN)
2N63121hru 2N6314 (PNP)
0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

IC. COLLECTOR CURRENT (AMPERES)

01 MUST SEFAST RECOVERY TYPE. eg
MBD5300 USED ABOVE IS ~ 100 rnA
MS06100 USED SELOW IS ~ 100 rnA

1-121-

I

2N4231A thru 2N4233A NPN,'2N6312 thru 2N6314 PNP

FIGURE 4 - THERMAL RESPONSE
1.0

c

O. 7 '--0=0.5

~ O. 5

~~
w:E

0.2

Wz
~~

o. 1=0.05

:~

......

--

O. 3-0~2

~~

f.:::;: ~;;.

0.1

:Ziii 0.01 =---0.02

tt:~ 0.05

W-,

¥:i\! 0.03 i-"""

,... r"'o.

0:

~ 0.02

P(pk)
OJC(I) = r(t) OJC
8JC = 2.32oCIW MAX
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT q
--t~

...... 0.01

......... .... ) I

rrmr

....

0.0 1
0.01

,,-

0.02 0.03

0.05

fJUl
j

TJ(pk) - TC = P(pk) OJC(I)
E

1111

I
0.2

0.1

0.3

0.5

2.0

1.0

3.0

5.0

20

10

DUTY
CYCLE,
0 =q/12

12

30

50

II II100

200 300

500

1000

I, TIME (ms)

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
10
~

'".....5
~

7. 0
5. 0

...

0.1

...

3. 0

'\.
'\.
de

2.0

(.J

1.0

~ ~:

'\.

'I.

0:

=>

m:-

There are two limitations on the power h,andling ability of a
transistor; average junction temperature and second breakdown .
Safe operating area curves indicate Ie - VeE ·Iimits of the
transistor that must be observed for reliable operation; i.e .• the

"\
05ms

'I

== TJ=2000C

transistor must not be subjected to greater dissipation than the
curws indicate~
The data 01 Figure 5 is based on T J(pk) ~ 200°C; TC is variable

io~,

'\. I\.

7 -;;:':;:'SECONO BREAKDOWN LIMITED
5

depending on conditions. Second breakdown pulse limits are valid

:::-:~~~~~~GL~:~~T~~llci~~TC = 250C

8 o. 3 - _
~
o. 2
O. 1
5.0

,"\..

(SINGLE PULSE)

1'1

2N~231A,12N6312

I II

2N4232A,2N6313
2N4233A,2N6314

I
7.0

10

20

<

lor duty cycles to 10% provided T J(pk)
200°C. T J(pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power than can be handled to
values less than the limitations imposed by second breakdown.

.J..!..

N°r'
I

50

30

70

100

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 6 - TURN "OFF" TIME
5.0

300
TJ = 25 0C- - IcilB=10 _ - IBI = IB2

3.0
2.0

-I-.

1.0
O.7
~. o.5

II@VCC=30V

':. o.3

:>"0

]

O. 1
0.07
0.0 5
0.05 0.07 0.1

.

0.3

.....

0.5 0.7

Ie, COLLECTQR CURRENT

"':......."
Cob

Z

;!:

'.

f"'...
~~ ~;~

~2N4J31Allhru
2~4233A (NPN)
2N6312 Ihru 2N6314 (PNP)
0.2

II IIII

-. -.

W

Is

1.0

100

Cibl (A1Ll Np'~~)

~~

U

~

T~ = ~5oh

I 1111111

-. t-

Q.

:=

- -

-

~

II@VCC=10V

o.2

200

FIGURE 7 - CAPACITANCE

.......

70

'

\
2.0

3.0

50

..... .....

.

I - - f-- - - - 2N4231A Ihru 2N4233A (NPN)
5.0

(AMPE~ES)

30
0.1

I I II
0.2

0.5

mt
1.0

2

i Tri7 III

IhrUI2N 3
2.0

5.0

10

VR, REVERSE VOLTAGE (VOLTS)

1-122

20

50

100

2N4231A thru 2N4233A NPN, 2N6312 thru 2N6314 PNP

I

NPN
2N4231A thru 2N4233A

PNP
2N6312 thru 2N6314

FIGURE 8 - DC CURRENT GAIN
300

I

200

-L
I'-- ~

~ 100

~~~ =2,0 ~

I

200

TJ =+150 DC

VCE 2.0 V

TJ +,50"1

'"
~

300

J
I I

It-

z

~ 100

I-

I-

70

fl'"

.~25"~

;:'i 70

C-

'-'

~

30

-

I-

20

10
0.05 0.07 0.1

fl

0.2

0.3

0.5 0.7

~

'".....,,,~

r--

1.0

50

2.0

3.0

t-

·55"C

'"CJ

f'.[',

wJ

CJ

+2S;C

~

.'>
i"""-.. .........

50

~

..... ~

30
20

,~

10
0.05 0.07 0.1

5.0

0,2

IC, CO.LLECTOR CURRENT (AMPERES)

0,3

0,5 0.7

1.0

"~

2,0

3,0

5.0

IC, COLLECTOR CORRECT (AMPERES)

FIGURE 9 - COLLECTOR SATURATION REGION
c;;l.0

II III

~

'">
~ O.8
'"
«
~
'"> O. 6

IC = 100 mA

II

500mA

iii 1.0

I

1.0 A

'"
«

'"
ffi

f5
t::

'"
~

\

"-

'"'"

~

>

0
1.0

2.0

5.0

10

l't-t-

20

U;l

'"

100

1.0A

3.0 A

0.6

~j

II I

200

500

0.4

0.2

'"'"

TJ = 25 DC

50

500 mA

II

11

;e
1

::::: o. 2

IC = 100 mA

II

11

1=

I\..

O.4

11

o. 8

~

l-

~

II

~

'"2:-w

3.0A

~

>
1000

0
1.0

,

r-t-

2.0

1\

.........
5.0

10

TJ = 25 DC

50

20

1J

100

200

500

1000

IB, BASE CURRENT (mA)

IB, BASE CURRENT (mA)

FIGURE 10 - "ON" VOL TAGES
1.4

1.4
TJ = 25"C

1. 2

~
~

'I

I
I

1. 0

o. 8

"..-

VBE (sal)@ICIlB

t:::;::::::

10

VBE al VCE

w

'"~

o. 6

'":>>

O.4

o. 2

VCE(sal) @leliB

0.2

0.3

0.5 0,7

~

V

in
~

1.0

......::~

6

1
I

1. 0

~ o. 8

2.0 V

-

=10

o
0.05 0.07 0.1

..1
TJ = 25"C

1. 2

1

~t::::"

w

~

VBE @VCE = 2,0 V

'"~ o.6
'"> .4

/

V

r-

VBE (sa!) @Ic/lB - 10

>'

.2
VCE(sa!)@ Ic/lB
2.0

3.0

5.0

IC, COLLECTOR CURRENT (AMPERES)

0
0.05 0.07 0.1

0.2

~

10
0,3

0.5

0.7

1.0

~

2,0

3.0

5,0

IC; COLLECTOR CURRENT (AMPERES)

.
j
,:

1-1'23

214398
214399
215745

®

MOTOROLA

PNP SILICON HIGH-POWER TRANSISTORS
20,30 AMPERE
POWER TRANSISTORS

___ designed for use in power amplifier and switching circuits.

PNP SILICON
•

Low Collector-Emitter Saturation Voltage VCE(sat) ~ 1_0 Vdc (Max) @ IC ~ 15 Adc (2N4398. 2N4399)

•

DC Current Gain Specified - 1_0 to 30 Adc

•

Complements to NPN 2N5301. 2N5302. 2N5303

40-60-1SO VOLTS
200 WATTS

*MAXIMUM RATINGS
Ratina
Co"ector-.Emitter Voltage
Co"ector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous

Svmbol

2N4398

2N4399

40

60

N5745
SO'

Unit

VCFO
VCB
VFR

40

60

SO

Vdc

IC

30
50

20
50

Adc

Vdc

5.0

Peak

Vdc

30
50

IB

7.5
15

Adc

Total Device Dissipation@TA = 250 C H
Derate above 250 C

Po

5.0
28.6

Watts
mWfDC

Total Device Dissipation@Tc= 25°C
Derate above 2SoC

Po

200
1.15

Watts
wfDc

Continuous

8ase Current

Peak

Operating and Storage Junction
Tary.perature Range

°c

TJ.Tstg 1 - - - 6 5 to + 2 0 0 -

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

Characteristic

8JC

0.875

°C/W

Thermal Resistance.Junction to Ambient

8JA

35

°C/W

-Indicates JEDEC Registered Data
• -Motorola guarantees this data in addition to JEOEC Registered Data.

.FIGURE 1 - POWER-TEMPERATURE DERATING CURVE

~
~

TA

Te

10
9.0

200
180

8.0

160

7.0

140

I'-.
"-

;::: :::
z

i5 4.0

80

3.0

60

2.0

40

'"
~

a

~ 1.0

"'-

"'-TC,

............
TA"' r--.....

MILLIMETERS
DIM MIN MAX
A

-.......

20

'"

r-.......

.......... r-.... .....
~

o

o

2&

&0

7&

100

-

B

.....

12&

150

17&

200

T. TEMPERATURE C.DC)

39.37
21.08
7.62
1.09
3.43

C
D
E

6.3&
0.99

F

29.90

30.40

G 10.67
H 5.33
J 16.64
K 1.18
0 3.84

11.18
5.&9
17.15
12.19
4.09
26.67

R

-

INCHES
MAX
MIN

-

-

0.250
0.039
1.177
0.420
0.210
0.655
0.440
0.151

CASE 11-01

Safe Area Curves are indicated by Figure 13. All

(TO·3)

limits are applicable and must be observed.

1-124

1.5&0
0.830
0.300
0.043
0.13&
1.197
0.440
0.220
0.675
0.480
0.161
1.050

2N4398, 2N4399, 2N5745
ELECTRICAL CHARACTERISTICS (Tc,; '" 25°C unless otherwise noted)

I

Charactel'inic

~mbol

Mo.

Moo.

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
ilC = 200 mAde, Ie" 01

Vdo

VCEOlws)

t,;ollector Cutoff Current
(VeE = 40 Vdc, la = 0)

2N4398

(VeE" 60 Vdc,la = 0)

2N4399

60
80
mAde

leEO

(VeE'" 80 Vdc, 18 '" 0)

50
5.0
50

2NS745

Collector Cutoff Current
tVeE = 40 Vdc, VSE(off) " 1 5 Vdcl

2N4398

tVeE = 60 Vdc, VSE(off) " 1.5 Vdcl

2N4399

mAde

ICEX

(VeE'" 80 Vdc, VSE (off) = 1 5 Vdc)

50
5.0

2N5745

(VeE = 30 Vdc, VSE(offl '" 1.5 Vdc, TC = lSOoC)

2N4398, 2N4399

(VeE = 80 Vdc, VeE off = 1 5 Vdc, TC = lS00CI

2N514S

Collector Cutoff Current
(Vea '" 40 Vdc, Ie = 0)

2N4398

(Vea = 60 Vdc, Ie '" 01

2N4399

(Vea = 80 Vdc, IE " 01

2NS745

I,.

40

2N4398
2N4399
2N5745

5.0
10
10
mAde

ICBO

1.0
10
1.0

Emitter Cutoff Current
(VES '" 5 0 Vdc, Ie'" O)

50

lEBO

mAde

ON CHARACTERISTICS
DC Current Galn!1)
IIc'" 1 0 Adc. VCE = 2 0 Vdc)

h'E

40
15
15
5.0
50

All Types

tie'" 10 Adc. VCE ,.. 2 0 Vdcl

2N5745

fie = 15 Adc. VeE'" 2 0 WeI

2N4398. 2N4399

lie" 20 Adc. VeE'" 2 0 Vdc)

2N5745

(Ie = 30 Ad(;:. VCE '" 4.0 vdcl

2N4398. 2N4399

Coliector·Emltter Saturation Voltage(1)
(lC = 10 Adc. Ie"' 1 OAde!

60
60

Vdo

VCEtsad
2N4398. 2N4399
2N5745

075
10

IIc'" 15 Adc. Ie'" 15Adcl

2N4398. 2N4399
2N5745

(lc '" 20 Adc.Ie ,. 20Adel

2N4398, 2N4399

1.0
1.5
20
2.0
40

(lC = 20 Adc, Ie '" 40 Adcl

2N5745

lie" 30 Adc, Ie '" 6.0 Ade)

2N4398. 2N4399

ease-Emitter Saturation Voltaget 11
IIC"' 10 Adc.Ie '" 1.0 Adcl··

Vdo

VSElsad
2N4398. 2N4399
2N5745

I.
17

IIc'" 15 Adc, Ie '" 1.5Adcl

2N4398. 2N4399
2N5745

1.85

(lc '" 20 Adc, 'e = 2.0 Adcl ....

2N4398. 2N4399

25
2.5

(lc '" 20 Adc, Ie '" 40Ade!

20

2N5745

Base·Emmer On Voltaget 11
IIC = lDAde, VCE '" 2 0 Vdc)

Vdo

VBEtonl

15
17

2N5745

lie = 15 Ade, VeE'" 2 0 Vdcl

2N4398, 2N4399

lie'" 20 Adc, VeE'" 4.0 Vdcl

2N5745

(Ie = 30 Adc. VeE" 4.0 WeI

2N439B, 2N4399

25
3.0

DYNAMIC CHARACTERISTICS

.,.

Current·Gam-Bandwidth Produetl21
IIC"" D Ade, VeE '" 10Vdc,f= 1 OMHzI

MH,

40
2.0

2N4398, 2N4399
2N5745

Small,Slgnal Current Gain
flC" 1.0Ade, VCE '" 10 Vdc, f = 1,0 kHz)

40

hto

.'
.'
.'

SWITCHING CHARACTERISTICS Is.. Figures 2 and 3)
Rise Time
Storage Time

2N4398, 2N4399
2N5746

tVee" 30 Vdc.
IC" ,OAde,
'Sl=IB2=1.0Adel

2N4398, 2N4399
2N5745

Fall Time

2N4398, 2N4399
2N5745

"
'.

0.4
1.0

If

O.S

1.5
2.0
1.0

"'Indicates JEOEC Registered Data.
(1)Pulse Test: Pulse Width ~300 Ils, Duty Cycle~ 2.0% .
• "'Motorola Guarantees this Data in Addition to JEOEC Registered Data. (2)fT is defined as the frequency at which Ihfe l extrapolates to unity.

SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 2 - TURN-ON TIME

:=G:
10

",-1 '-

20ns

I

-I
DUTY CYCLE

I

-l1.0V

FIGURE 3 - TURN-OFF TIME

Vee

-30V

RL

3.0

>-10101001"

2.0 %

-30V

RL

3.0

10

10

TO SCOPE
~'" 20ns

TO SCOPE

R,

~"'20ns

I

R,

-II.OV 1

_I

1

I

I
~-

Vee

-I
DUTY CYCLE

1-125

I
:-t,~20ns

1-10101001"
~

2.0 %

V"

+4.0 V

2N4398,2N4399,2N5745

TYPICAL "ON" REGION CHARACTERISTICS

FIGURE 4 - DC CURRENT GAIN

3.0

~
N

--

~

"<;z

1.0

f-

I
u

"
~

05

TJ

-

~ r---

--

,..-1-

;;: 0.7

"'>-

-

--

20

:::;

«

-r-

--

-- t:::- -- - ' ,
r-- f-::::

IWC

-

25°C

..

-- -

!--

- -..

-

WC·

- - - VCE=IJVdc l_
- - VCE' 2.0 Vdc

--- -r-----

_I03

t-.. " ,

~ ..... ~

........
.........

02

---

0.1
003

005

0.1

007

02

03

05

07

20

10

30

50

70

".....

~ ~.

I""" ~
10

10

30

Ie. COLLECTOR CURRENT lAMP)
FIGURE 5 - COLLECTOR SATURATION REGION

2.0

~
~

~

eo

III
III

16

Ie

~

1.0A

I
I
lOA

50A

1.2

!:;:

'"

~

"

002

001

25°C

---

\

1\\

~ 0.4

~

20A

1\

~ 0.8
~

TJ

003

01

00500701

0.5

03

20

10

07

30

50

7.0

10

I,. BASE CURRENT lAMP)
FIGURE 7 - TEMPERATURE COEFFICIENTS

FIGURE 6 - "ON" VOLTAGES

2.0

25
1III

1.8

I

11;~~~506

1.6

'I

1.4

~ll

1.2

'/

1.0
VBE(sd)

0:8

@ le/18 = 10

1 1.1.

II

/

0.6

0.1

0.2 0.3 0.5

10

lell, < h,,/2

10

~

05

'"~

0.0

~

-0.5

8

*fJvcfor VCE(s~tl

/

...-

J II

-2.5
10

--

fJvBforVBE

-2.0
2.0 3.0 5.0

V

V

-1.0

~ -15

i'iT) W1H+-

0.030.05

'AppLlis IFO~

1.5

~

~

) II ~ I ~i 1~II0

0.2

P

=<

V,,@Ve,-20V
0.4

1111

20

I

003 0 05

20 30

Ie. COLLECTOR CURRENT lAMP)

01

0 2 03 05

10

20 30 50

Ie. COLLECTOR CURRENT IAMP(

1-126

10

20 30

2N4398,2N4399,2N5745

RATINGS AND THERMAL DATA
FIGURE 8 - ACTIVE REGION SAFE OPERATING AREA
100
.

50

~

100~s

1.0 ms

-

r-f-

20

5.0ms

........

-

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.

......

>~ 10 ~.2N5745
2N4398. :N4399
~ 5.0

Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must

de

not be subjected to greater dissipation than the gurves indicate.
The data of Figure 8 is based on T J(pk) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid

~ ~~c~n2d~~:CBreakdown Limited

"'
~

20

j

10

r-- - -_ Bondtng Wire Limited
§--- Thermal Limitations

F

o

~ 0.5

for duty cycles to 10% provided TJ(pkl,.;2000C. TJ(pki may be

TC=25 0 C

Pulse Duty Cycle';;;; 10%

calculated from the data in Figure 9:. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

1~

H:J-=

02
01
1.0

2.0

5.0

3.0

2N4398
2N4399
2N5745
20

10

30

50

100

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 9 - THERMAL RESPONSE
u

~
gj
~

~
g

10
07
05

0

05

03
02

02
01

~

01

t;

005

f-

005

~ 007

~ 003
~ 002
'"~ 001 V
001

---.---

--

V

--

....--=

>::;::::
STEADY STATE VALUES

i-:::;::: ::::::

HJcl~1

V

0

0 BWCIW

HJCltl '" r(t) HJC{<>oJ

001

Ii

11SIINGlE Ul E)

002

005

02

01

05

10

50

20

10

20

50

100

200

500

1000

t. TIME OR PULSE WIDTH 1m,)

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

I~IP-I

------In "
-I

nL---"

)

)

1'1--

I )

I

I----

Ilf - - _ I

DUTY CYCLE 0

I,

t;

I, f

PEAK PULSE POWER

Pp

A tram of periodical power pulses can be represented by the
model as shown In FlgureA. Using Ihe model and Ihe device
thermal reponse, the normalized effective transient thermal
reslslance of Figure 9 was calculaled for vanous duly cycles.

To find BJc(I), muiliply Ihe valueoblalned from Flgure9 by Ihe
sleady slale value BJc( 00)
Example:
The 2N4398 is dlssipallng 100 watts under Ihe follOWing
condilions: 1, ~ 1.0 ms, Ip =5.0 ms. (0 =0.21
USing Figure 9, al a pulsewldlhof 1.0 msand 0~0.2, Ihe reading
of r (I) IS 0 28.
The peak rise In Junction temperature IS therefore
T ~ r(l) X Pp X BJc( 00) ~ 0.28 X 1 ()() X 0.875 ~ 24.5°C

1-127

2N4898 thru 2N4900

®

MOTOROLA

lIB
MEDIUM-POWER PNP SILICON TRANSISTORS

4 AMPERE

· .. designed for driver circuits, switching, and amplifier applications.
These high-performance devices feature:

GENERAL PURPOSE
POWER TRANSISTORS

=0.6 V max @ IC = 1.0 Amp

•

Low Saturation Voltage - VCE(sat)

•

Excellent Safe Operating Area

•

Gain Specified to IC = 1.0 Ampere

•

2N4900 Complementary to NPN 2N4912

40-80 VOLTS
25 WATTS

MAXIMUM RATINGS
Rating

Svmbol

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCB

EmItter-Base Voltage

VEB

Collector Current

Continuous*

IC'

Base Current

IS

Total Device Dissipation TC

= 2SoC

PD

Derate above 250 C
Operating & Storage JUnction
Temperature 'Range

TJ. T stg

2N4898 2N4899 2N4900
40
60
80
40
60
80
5.0
1.0
4_0

.....
...

......
..

.

1.0
25
_0.143_
_--e5,o+200_

Unit
Vdc
Vdc
Vdc

I-

Adc
Adc

Watts
WloC

°c

i~
II

····-1

E
SEATING PLANE

Characteristic
Thermal'Reistance. Junction to Case

Ie value is

Max

7.0

I

20

"'" "'-.""'----

~

z

0

~

15

r---- f--

~

0.
~

~
:;'
~

~ r"-...
~

lD

"-

"
o

o

20

40

j

-J-

1~
H \::

FIGUR_E 1 - POWER-TEMPERATURE DERATING CURVE

20

K

---F--

based upon JEDEC current gain requirements.

(see Figure 5).

~

D

STYLE I.
PIN 1. BASE
2. EMITTER
CASE, COLLECTOR

The 4.0 Amp maximum value is based upon actual current-handling capability of the device

in

-

-'-t- -------

THERMAL CHARACTERISTICS

*The 1.0 Amp maximum

U

60

80
100
120
140
Te. CASE TEMPERATURE I'CI

160

"'" "'180

200

v: ~ ~I
2

I

1

lJ\

.

Y-T

~

MILLIMETERS
DIM MIN MAX
8 11.94 12.10
C
6.35 8.64
0
0.71 0.86
E
1.27
1.91
F 24.33 24.43
G
4.83
5.33
H
2.41
2.67
J
14.48 14.99
K
9.14
p
1.27
Q
3.61
3.86
S
8.89
T
3.68
U
15.75

INCHES
MIN
MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.152
0.350
0.145
0.620

-

All JEOEC Dimensions and and Notes Apply.
CASE 80-02

Safe Area Curves are mdlcated by Figure 5. All limits are applicable and must be observed.

1-128

~

TD-66

2N4898 thru 2N4900
ELECTRICAL CHARACTERISTICS

(T, = 25'C ""'''' oth".os, oo',d)

Symbol

Characteristic

Min

Max

40
60
80

0.5
0.5

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage'
2N4898
(IC = O. 1 Ade, IB = 0)
2N4899
2N4900

BV CEO(sus)

,

Collector Cutoff Current
(V CE = 20 Vde, IB = 0)
(V CE = 30 Vde, IB = 0)

2N4898
2N4899

-

= 40 Vde,

2N4900

-

0.5

-

0.1

-

1.0

-

0.1

-

1.0

40

-

(V CE

= 0)

IB

Collector Cutoff Current
(V CE = Rated VCEO' V BE (off)

(V CE

= Rated VCEO '

VBE(Off)

Collector Cutoff Current
(V CB = Rated VCB' IE

Z

= 1. 5 Vdc)
= 1.5 Vdc,

I CEO

mAde

I CEX
TC

mAdc

= 150°C)

mAdc

ICBO

0)

Emitter Cutoff Current
(V BE = 5.0 Vdc, IC = 0)

Vde

lEBO

mAdc

ON CHARACTERISTICS
DC Current Gain*
(IC = 50 mAdc, VCE

(IC

= 500

(IC

=1. 0 Adc,

mAdc,

h FE '

= 1. 0 Vdc)
VCE = 1. 0 Vdc)

VCE

I

20

=1. 0 Vdc)

Collector-Emitter Saturation Voltage*
(IC =1. 0 Ade, IB =0.1 Adc)

VCE(sat)

Base-Emitter Saturation Voltage"
(IC =1. 0 Adc, IB = 0.1 Adc)

VBE(sat)

Base-Emitter On Voltage'
(IC = 1. 0 Adc, VCE =1. 0 Vdc)

VBE(on)

•

-

100

10

-

-

0.6

-

1.3

-

1.3

3.0

-

-

100

25

-

Vdc

,

•

Vdc
Vdc

SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC - 250 mAdc, VCE = 10 Vdc, f
Output Capacitance
(VCB = 10 Vdc, IE

iT

=1. 0 MHz)

Small-SlgnaI Current Gain
(IC =250 mAdc, VCE =10 Vdc, i

pF

Cob

= 0, f = 100 kHz)

hfe

=1. 0 kHz)

MHz

-

" Pulse Test: PW ~300 /1S, Duty Cycle = 2.0%
FIGURE 3 - TURN·ON TIME

FIGURE 2 - SWITCHING TIME EQUIVALENT CIRCUIT

50
TURN·ON PULSE

Vee

V:,.'IOII)tJ

0----'1/'''''''"---,

30
10

0-- - - -

'"

-II V'
---'
I

1.0 Vee' 30 V
~tl

t,

I
v· - ~ - ,n

I

'">=

<--

,

I

-1I

+r -

tt <

0.3
0.1

+ 4.0 V

I

15ns

~

r-.

0 Vee..,.,.

60 V,

"":l

I

1-129

-

-

10, UNLESS NOTED

--

TJ

=

+25°C

TJ

~

+150°C

:-1,
t,

0.1 Vee· 3dV-0.07 VBE(off} --- 0
0.05
20
30
10

100 < t, < 500 I'"
APPROX ' i t , < 15 ns
-11 V
OUTYGYClE:::20%
I

...... ......

]. 0.7
0.5

APPROX 9 0 V

--.

30V
lell, 10

Vee

f .......

~

APPROX I

lel l,

""-.....

VBE!off)

Vee .- 60 V

10V

.....
50 70 100
100 300
Ie, COl LECTOR CURRENT (mAl

500 700 1000

III

2N4898 thru 2N4900

FIGURE 4 - THERMAL RESPONSE

OJ

_.

~ 1.0
:::; 0.7

I

0

as

03

0

0.2

t;;

02

0-

0.1-

~

ill

I

0

0.05

E5 0.0 7
~ 00 5

0

am

~

J..-

I-"

SINGLE PULSE

r(t}fJJC

"Je

)O°C/WMax

"Je

58'C/WTyp

oCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At I)

ffiSL
tt:--J

---

!Z
~ 0.03
~ 0.02

€

"Jcll)

-.....

0.5

cJ

TJ(pk}

Te ~ Plpk) OJc(tl

DUTY CYCLE. D Idl,

0.0 I
0.01

0.02 0.03

005

01

02

II II

as

03

1.0

20

30
50
t. TIME (m,)

IIIII

10

20

30

50

I I I

100

200

300

500

1000

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA

10
)0

,.a:

i

The safe operating area curves IndIcate Ie-VeE
limIts of the tranSistor which must be observed tor
reliable operatIOn Collector load lines for speCific

100 ItS

50

~ 10
::.3 07 C=
8 05

:::I

~

0.2

==

-

O. I

10

de

CircUIts must fall below the limits indicated by the
applicable curve

50ms

"

10

...Y 03

lOms

"

'" 3.0

The data of Figure 5

'\.

r

50

70

lell,

""'*-±-

FIGURE 7 - FALL TIME

2.0
,--- r- lel l,

:g
>=

I

10

r-;::

5.0

TJ +25 0 C L
TJ - +150°C
I"
I"

20 -

... -

=

100

FIGURE 6 - STORAGE TIME

30

TJ(pk)

Vided TJ(pk) '.::: 200°C TJ!pkl may be calculated
from the data In Figure 4 At high case tempera·
tures, thermal itmltatlons Will reduce the power
which can be handled to values less than the Ilmlta·
tlOns Imposed by secondary breakdown

50 ) a 10
10
30
30
VeE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

50

based upon

Pulse curves are valid for duty cycles to 10% pro-

TJ 200°C
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION -'-11,1_
LIMIT FOR
(BASHMITTER DISSIPATION IS SIGNIFICANT ABOVE Ie ~ ~.F 2N4898
1N4899
PUILSEIOUITY C;eLE'IIO%
1N4900
20

IS

20QoC, T CIS vanable dependmg upon condItions

j\.

"

3.0

""L....

le/ l,-20

2. a

--

It
'1 La le!l;-I~

....

1.0

TJ ~ +15°C
TJ~ +150°C
Vee ~ 30V

181 = 192

:;:; O. )

a.)

~ 0.5

05
t,.

:: OJ

I,

:::I

~

ihtf

.s

0.2

O. 2

I

I

)

0.0 7
0.0 5
10

20

30

200
50 )0 100
Ie. COLLECTOR CURRENT (mA)

300

500 )00

laoo

1-130

-.

o. 3

20

30

200
50 70 100
Ie. COLLECTOR CURRENT (mAl

300

500 )00 1000

2N4912

®

MOTOROLA

III
NPN SI LICON TRANSISTOR

1 AMPERE

· .. designed for driver circuits, switching, and amplifier applications.
This high-performance device features:

NPN SILICON
POWER TRANSISTOR

•

Low Saturation Voltage - VeE(sat) = 0.6 V max

•

Excellent Safe Operating Area

•

Gain Specified to Ie = 1.0 Amp

•

Complement to PNP 2N4900

Ie = 1_0 Amp

@

80 VOLTS
25 WATTS

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

VeEO

80

Vdc

Collector-Base Voltage

Vee

80

Vdc

Emitter-Base Voltage

VEe

5.0

Vdc

Ie'

1.0

Adc

Base Current - Continuous

IS

Total Device Dissipation TC - 25°C
Derate above 2SoC

Po

1.0
25
0.143

Watts

mW/oC

T J, T stg

-65 to +200

°c

Collector-Emitter Voltage

Col/ector Current - Continuous*

Operating & Storage Junction
Temperature Range

Adc

I

Symbol

I

Thermal Resistance, Junction to Case

ReJC

I

I

I

Max

I

7.0

P

C

Ir

THERMAL CHARACTERISTICS
Characteristic

~I=_-BU'
4--- ------- 1

Unit

I

E

0

--,--

°CIW

-J-

*the 1.0 Amp maximum Ie value is based upon JEDEC current gain requirements.

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
25

~
I-

"-f".-..

20

«

0

;::

;t

15

MILLIMETERS
DIM MIN
MAX
S 11.94 1270
C
63' S ..
0
071 086

r"-.
.........

gj
0

"'~

~

10

.:

~

STYlE 1
PIN 1 BASE
2 EMlnER
CASE COLLECTOR

.........

~
z

"

60

80

100

120

140

J

14.48 1499
914

S
T
U

160

1.91
24.43

483

533

241

2.67

P

.........

127

361

386
889
368
15.75

INCHES
MIN
MAX
0470
0250
0.028
0050
0.958
0190
0.095
0570
0.360

0500

0340
0034
0075
0962
0.210
0105
0590

0050
0.142 0152
0350
0145
0620

All JEOEC DImenSIons and and Notes Apply

-...........
40

127

24.33

K

.........
20

E

F
G
H

Q

5.0

K
I

SEATING PLANE

180

200

TC, CASE TEMPERATURE lOCI
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed .

. 1-131

CASE 80-02
TO-66

2N4912

..

ELECTRICAL CHARACTERISTICS (TC' 25°C unless othe,wi.e noted)
Symbol

Min

Max

Unit

BVCEO(sus)

80

-

Vde

ICEO

-

0.5

mAde

-

0.1
1.0

Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage '1)

(lC ~ 0.1 Adc, IB

=0)

Collector Cutoff Current

(VCE

= 40 Vde, IB =0)

Collector Cutoff Current

(V CE
(VCE

ICBO

-

0.1

mAde

lEBO

-

1.0

mAde

40
20
10

100

VCE(sat)

-

0.6

Vde

VBE(sat)

-

1.3

Vde

VSE(on)

-

1.3

Vde

IT

3.0

-

MH.

Cob

-

100

pF

hie

25

-

Collector Cutoff Current

(VCB

mAde

ICEX

= Rated V CEO, V EB(off) = 1.5 Vde)
= Rated VCEO, VEB(off) = 1.5 Vde, TC = 150°C)
= Rated VCB,

IE

= 0)

Emitter Cutoff Current

=0)

(VEB = 5.0 Vde, IC

ON CHARACTERISTICS (1)
DC Current Gain·

-

hFE

(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 1.0 Ade, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage

-

(lC = 1.0 Ade,IB = 0.1 Ade)
B8se~Emitter

Saturation Voltage

(lC= 1.0Ade, IB·=O.l Ade)

Base-Emitter On Voltage
(lC = 1.0 Ade, VCE ·1.0 Vde)
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product

(lC = 250 mAde, VCE = 10 Vde, I = 1.0 MH.)

Output Capacitance
(VCB = 10 Vde, IE

=0, I = 100 kHz)

Small-Signal Current Gain

(lC = 250 mAde, VCE = 10 Vde, I = 1.0 kHz)
(1) Puis. Test: Pulse Width

=300 I'S, Duty Cycle = 2.0%.

FIGURE 2 - SWITCHING TIME EQUIVALENT CIRCUIT

FIGURE 3 - TURN·ON TIME

50
APPRORX
I TURN ON PULSE
+11 V I

v..

-

II

Veeo-~"","-",

20

t,

1-

-------

I

VaElofl)

APPROX
+l1V

30

Rl

I

"

- 4.0 V

t 1 :S 15 ns
100 < t, '" 500 I"
t):=;: 15 ns
DUTY CYCLE", 1 0%

t,
TURN-Off PULSE

~

LO

o7

~

01

30 V

I

~ s::.;

TJ

=

+250C

_ TJ

~

+150'C

I

t,

_

Vee GOV
~ V"I,")
20V

"' .....

J Vee - 30 V
00 7 VeE1 ",,} .. a
00 5
10
10
30

1-132

le/l~ ~11O.1 UN~ESSI NdTE~ t

Vee ~ 30 V
lell, ~ 20
Vee ~ 60 V

,

><

~

O. 5. Vee

03

,,;:;;

.....
50 70 100
200 300
Ie. COLLECTOR CURRENT (mAl

500 700 1000

2N4912

FIGURE 4 - THERMAL RESPONSE
~ 1.0

~ 0.7

D 0.5

~ 0.5

~ 0.3

D 0.2

~ 0.2

D 0.1

ill

0.05

'"' 0.1

~ 0.07

D 0.01

;: 0.05

8Jell)

-

SINGLE
PULSE

15

~ 0.03

:=

0.02

= 0.3

<--

12

]

,.'"

Cjd« Ceb

APPROX 9.0 V
I
I
I
I
Vin - ~ - - -1I
I
I

........

~

....,

Iclls - 10. UNLESS NOTEO
TJ = 25°C
r-----TJ=1500C

Jc~ =136 V -

,........

APPROX I

--.

..........
......

~

Ic/lS = 20

~

t--.

V~c - 60 V

I,

Vcc

60V

VSEloff) - 2.0 V

"...

VC~

=;v-.
0.1
0.07 VSEloffi a
0.05
20
10
30

RS and HC
varied to
obtain desired
current levels

50

70

100

200

300

Ie, COLLECTOR CURRENT ImA)

1-135

500 700 1000

II.

2N4918 thru 2N4920

FIGURE 4 - THERMAL RESPONSE
~~

1.0
0.7

z
~

5.0

~

0.3

~~

0.2

0=0.5
0.2

",-,

~~
1- ..

ffi~O.07
;;; 0.05
z
~ 0.03

'2 0.02

-

~

0.1

r-0.1

0.01

0.0 1
0.01

o CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

P"'"

I--"

0.05

-

BJC(I) = r(t) BJC
BJC = 4.1S"C/W Max

~

RLrL

TC - P(pk) BJCh)

TJ(pk)

~Il-.-l
12

SINGLE PULSE

DUTY CYCLE. 0 = \1/12

I I I I

Illil
0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

I I III

3.0

10

5.0

_

20

30

50

200

300

500

1000

I. TIME (m,)

FIGURE 5 -

ACTIVE-REGION SAFE OPERATING AREA

10
~

1.0m,- ~ r"'<; 100.,

5. 0

'"
5'" 2.0
a'"
a:

o

\

SECOND BR EAKOOWN
LIMITED
BONDING WIRE LIMITED
- THERMALLY lIMITED@TC = 25°C

TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided

~j

TT"i

1.0

- -- --

0.5

8

~

O.

de

PULSE CURVES APPLY BELOW

o.

2.0

\\

\..

The data of Figure 5

5.0

3.0

is based on TJ(pk) = 150°C;

TJ(pk)::S 150°C. At high case temperature., thermallimita-

II

tions will reduce the power' that can be handled to values less
than the limitations imposed by second breakdown.

II II

:-RATrT
1.0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ie - VeE operation
i.e., the transistor must not be subjected to greater dissi'pation
than the curves indicate.

"
,5.0ms",,

50

7.0 10

20

50

30

70 100

VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 6 - STORAGE TIME
5.0
~

3.0

]

Ic/1B=20

2.0

-

w

r-

....

IcllB = 10

-

3.0

]

1.0

~

o.7
o.5

j

~ ~.3

""L....

2.O~

....

~::::::

'" 1. 0
;::
w O.7
to
;:i O.5

S

-

FIGURE 7 - FALL TIME
5.0

TJ 25°C L
TJ = 150°C
IBI = IB2

--

ICIIB·20

Ii.:'-

......

Ic/l~ - Iii'

-..

~ 0.3

1,'"Is-lIBlt

TJ = 25°C
TJ = 150°C
VCC=30V
IBI = 182

1'""-

O.2

O. 2

o. 1

O. 1

0.0 7
0.0 5
10

0.07
0.05
10

20

30

50

70 100

200

300

500 7001000

20

30

50

70

100

200

IC. COLLECTOR CURRENT (rnA)

IC. COLLECTOR CURRENT (rnA)

1-136

300

500 700 1000

2N4918 thru 2N4920

TYPICAL DC CHARACTERISTICS
FIGURE 8 - CURRENT GAIN

FIGURE 9 - COLLECTOR SATURATION REGION

1000
700
SO 0

~ 1.0
VCE=1.0V=

~ 300

"'>-

TJ

200

~

i--'

~ 100
'"'

70

~

50

"

"

0
0.2 0.3 0.5

1.0

IC. COLLECTOR CURRENT ImAI

2.0 30

S.O

10

20 30

50

100

200

lB. BASE CURRENT ImAI

FIGURE 10 - EFFECTS OF BASE-EMITTER RESISTANCE

FIGURE 11 - "ON" VOLTAGE

10B

loS

........ -......

10 7

........

"-

f""'....

"-l

"
"'~ O. 6
">



2
1/

II

VCE=30V
8
4

2SoC
REVERSE~

-0.1

IiiFFORWARO
+0.1

+0.2

+0.3

+0.4

ili
I-

2
I

+0.5

VBE. BASE·EMITTER VOLTAGE IVOLTSI

I: I II

TJ - 100°C to 150°C
'eVc FOR VCElsatl
TJ = -55°C TO +100 oC

0
9VB FOR VBE

-2. 0

-2. 5

2.0 3.0 5.0

10

II I

20 30

-I50

100

200 300 500

IC. COLLECTOR CURRENT (mAl

1-137

J

L

c..-l.5

10 4

11 11

I

"'"'~ -0. S

/

IC = Ices

II

~ +1. 5

1/

0
1

1000 2000

'APPLIES FOR ICIIB
u
a:

I'

,

!'" 5.0ms ..... ,

TJ = ISOoC

2.0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ie . v CE operation
i.e., the transistor must not be subjected to greater dissipation

'\

Ide \. \

1

1.0

r-'" 100.,

than the curves indicate.
The data of Figure 5

SECOND BREAKDOWN
LIMITED
:: 0.5 - - - - - BONDING WIRE LIMITED
THERMALLY
LlMITED@TC=25 0 C
8 3
~ O.
PULSE CURVES APPLY BELOW
0.2
o

~ o. 7

O.

l~rTVT
1.0

2.0

3.0

II

I

I II

I

5.0 7.0

10

20

30

is based on T Jlpk) = 150°C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided
T Jlpk) ~ 150°C. At high case, temperatures. thermal limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.

50

70 100

VCE, CDLLECTDR·EMITTER VOLTAGE IVOLTS)

FIGURE 6 - STORAGE TIME

5.0
3.0
2.0

~.!£II' _10

--

...~

3.0

-

lell,

;;

20

1\

I""",:

~ 1.0

!iii
~
::1:

0.3
0:2
0.1
0.07
0.05

~

I"
~:~~~j~~fI; -lSO'C
t, W. t,
20

30

50 70 100
200 300
Ie, COLLECTOR CURRENT lmAI

500 700 1000

1-140

20

r-.. or-, '.1

0.7
0.5 ~.Ie/l,

10

-

0.3

0.1

181

10

-~

0.2

~TJ=25'C

...
.... 1" ......
lell,

2.0

-"""-

1.0 ~ le/l. 20
i!!'! 0.7
0.5

I

FIGURE 7 - FALL TIME

5.0

0.0 7
0.05
10

TJ -25'C
- - - TJ =150'C
Vee 30V
1,,= I..
20

30

50 70 100
200 300
Ie, COLLECTOR, CURRENT ImAI

500 700 1000

2N4921 thru 2N4923

FIGURE 8 - CURRENT GAIN

100a
700
50a

FIGURE 9 - COLLECTOR SATURATION REGION

1.0

VCE

~ 30a

~

~ 0.8

1.0 V

~

I I

111111
Ic~O.lA

~

7a

~

r-..

TJ -150'C

~ 10a

0.6

~

0.4

~

0.2

~

~

I I
10

20 30

50

100

TJ ~ 25'C

!:::

55'C

1a
2.0 3.0 5.0

200 300 500

I'-.

o

1000 2000

0.2 0.3 0.5

FIGURE 10 - EFFECTS OF BASE-EMITTER RESISTANCE

1.0

30Y-

VCE

......... Ic-l0'lcES

Ic~2'lcES

...

10•

~

~ 10

........

IC"""'CES

,

........

i 4==
-

Gl 10

_!OH VALUES
_ OBTAINED FROM

.........

~

~

r.......
........

......

~

........

I

o

30

'/
0.9

~

"'

'" "'

60
90
TJ• JUNCTION TEMPERATURE ('C)

VCE I"'I@ IclI, ~ 10
2.0 3.0 5.0

150

20 30

50

100

200 300 500

L
<3

"APPLIES FOR Icll.$hFE/2

+2. 0

I I II

~+1. 5

rs 10,

~+l.0

/

00'b-

g§

1000 2000

FIGURE 13 - TEMPERATURE COEFFICIENTS

+2. 5

150'C

~

TJ =

~ +0. 5

25'C
10 1

~

10

Ic. COLLECTOR CURRENT (mAl

./

TJ

/

o

FIGURE 12 - COLLECTOR CUTOFF REGION

,
10

1

2.0V

0.3

...........
120

V,,@VCE

I-::

~

VBEf,atJ@lc/IB 10

~ 0.6

r.......

104

8

200

TJ ~ 25'C

~

......

_ FIGURE 12

,

10

100

lUi
1.2

10

~

50

1.5

7

~

2.0 3.0 5.0
10
20 30
I•• BASE CURRENT (mA)

FIGURE 11 - "ON" VOLTAGE

10'

~

\

1\

Ic. COLLECTOR CURRENT (mAl

i

1.0 A

ffi

25'C

a
a
a

1/

LL

0.5A

0.25 A

;'"

c 20a

~

II

I 11111

I III
1000C 150 0C
to

... (Jvc FOR VeE (,at)

8

55'C TO

+100'C -

~

~

-lc-ldES

~

8 10 0

1/

~-1. 0

..Y

/.

VCE

~-1. 5

30V_ -

1

8

,~

4
2
I

10~0.2

-0. 5

REYfRSE
-0.1

~ORWArD

+0.1
+0.2
+0.3
V". BASE-EMlnER VOLTAGE (VOLTS)

+0.4

+0.5

1-141

Ov, FOR V"

-2. 0
5
-2. 2.0 3.0 5.0

:J

~I-

I I
10

20 30 50
100 200 300 500
Ic. COLLECTOR CURRENT (mA)

1000

2000

2N5038
2N5039

®

-

MOTOROLA

20 AMPERE

NPN SILICON TRANSISTORS
NPN SILICON
POWER TRANSISTORS

· .. fast switching speeds and high current capacity ideally suit these
parts for use in switching regulators, inverters, wide·band amplifiers
and power oscillators in industrial and commercial applications.
•

High Speed - tf = 0.5 J.ls (Max)

•

High Current - IC(max) = 30 Amps

•

Low Saturation - VCE(sat) = 2.5 V (Max)

@

75 and 90 VOLTS
140 WATTS

IC = 20 Amps

*MAXIMUM RATINGS

I
I
I

Rating
Collector-Base Voltage

Symbol

2N5038

VCBO

150

Collector-Emitter Voltage

VCEV

150

Emitter-Base Voltage

VEBO

7

Vdc

.IC
ICM

20
30

Adc

Collector Current - Continuous
Peak (1)

Base Current - Continuous
@ TC

Total Device Dissipation
Derate above 25°C

= 2SoC

Operating ~nd Storage Junction

2N5039

Unit

120

Vdc

120

Vdc

IB

5

Adc

Po

140
0.8

Watts
W/oC

TJ,T.tg

-65 to +200

°c

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

JE-'·~tr

.~i
-F-

Thermal Resistance, Junction to Case

/

*lndicates JEDEC Registered Data.

Q~
H \f

(1) Pulse Test: Pulse Width .. 10 ms, Duty Cycle .. 50%.
FIGURE 1 ..., SWITCHING TIME TEST CIRCUIT

I

+30 V

Re
2.5

10.n

PW= 20jJs
Duty Cycle:: 1 %

lN4933

2N5038

Ie"" 12 Amps
'S1"" IS2
1.2 Amps

=

-5 V

l

~.

~ 1

'I

,)\

yy

U

Vee

r-J-

I)Z-T

lG

r

"-S

STYLE 1
MILLIMETERS
INCHES
PIN 1. BASE
DTM MIN MAX . MIN MAX
2. EMITTER
A
9
1
CASE COLLECTOR 8
21.08
0.830
C 6.35
7.62 0.250 0.300
0
0.97
1.09 0.038 0.043
1.78 0.055 0.070
E 1.40
F 29.90 30.40 1.177 1.197
G 10.67 11.18 0.420 0.440
H
5.33
5.59 0.210 0.220
J 16.64 17.15 0.655 0.675
K 11.18 12.19 0.440 0.480
n 3.81 4.19 0.150 0.165
R
26.67
1.050
U 2.54
3.05 0.100 0.120

-

2N5039

le= 10 Amps
IB1 :: 182 = 1.0 Amps

CASE 1-04
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO·3 OUTLINE SHALL APPLY.

1-142

2NS038, 2NS039

*ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted).
Characteristic

Symbol

Min

Max

90
75

-

-

50
50
10
10

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

(lC

= 200 mAde,

IS

2N5038
2N5039

Collector Cutoff Current

(VCE
(VCE
(VCE
(VC'E

2N5038
2N5039
2N5038
2N5039

-

Emitter Cutoff Current

= 5 Vdc,

IC

= 0)

(VEB

= 7 Voe,

IC

= 0)

mAde

'CEX

= 140 Vde, VBE(off) = 1.5 V)
= 110 Vdc, VSE(off) = 1.5 V)
= 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150o C)
= 85 Vdc, VBE(off) = 1.5 Vdc, TC = 150o C)

(VEB

Vde

VCEO(sus)

= 0)

mAde

'EBO

-

2N5038
2N5039
Both

-

5
15
50

20
20

100
100

VCE(sat)

-

2.5

Vdc

VBE(sat)

-

3:3

Vdc

-

ON CHARACTERISTICS (1)

DC Current Gain
(lc
(lc

2N5038
2N5039

Collector-Emitter Saturation Voltage
(lc

= 20 Adc,

'B

= 5 Ade)

Base-Emitter Saturafion Voltage
(lC

= 20

-

hFE

= 12 Adc, VCE = 5 Vdc)
= 10 Ade, VCE = 5 Vdc)

Ade, 'B

= 5 Adc)

DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Smail-Signal Short-Circuit

Forward Current Transfer Ratio
(IC

= 2 Adc,

VCE

= 10 Vde, f = 5 MHz)

SWITCHING CHARACTERISTICS
RESISTIVE LOAD
I (VCC = 30 Vdc)
IIc = 12 Ade, 'Bl
I

Rise Time

Storage TIme

Fall Time
IIc = 10 Adc, IBl
I
"'Indicates JEDEC Registered Data.
~s,

(1) Pulse Test: Pulse Width .. 300

= 'B2 = 1.2 Adc)
= IB2 = 1 Adc)

I
2N5038l

t,

I

ts

J

2N5039I

tf

I

-

-

I

0.5

I

I

1.5

I

0.5

~
~

,tS
,tS
,tS

Duty Cycle .. 2%.

FIGURE 2 - FORWARD BIAS SAFE OPERATING AREA

100
50
There are two limitations on the power handling ability of

i

'"
....
~

0

$

....

0

a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may reduce
the power that can be handled to values less than the limitations
imposed by second breakdown.

de

13
~

"

~

1

~

8 o. 5 ~
~

o.
o.

f-

-

Bondmg W,re limit

- - --Thermal limit
Second Breakdown limit

:F=t==t=

TC = 25°C

2N5039=
2N5038 =

20 30
50
10
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

70

100

1-143

2N5050
215051
2N5052

®

MOTOROLA

MEDIUM-POWER NPN SILICON TRANSISTORS
2 AMPERE
POWER TRANSISTORS
NPN SILICON

_ _ _ designed for untuned amplifier and switching applications_

125-200 VOLTS
40 WATTS

• High Voltage RatingsVCEO = 125, 150 and 200 Vdc
• Low Collector-Emitter Saturation Voltage VCE(sat) =1.0 Vdc (Max) @ IC =0_75 Adc
• Packaged in the Compact, High Efficiency TO-66 Case

*MAXIMUM RATINGS
Svmbol

2N5050

2N5051

2N5052

Unit

VCEO

125

150

200

Vdc

Collector-Base Voltage

VCR

125

150

200

Vdc

Emitter-Base Voltage

VFR

6.0

Vdc

II"

2.0

Adc
Adc
Wetts

Rating
Collector-Emitter Voltage

Collector Current - Continuous
Base Current

Total Device Dissipation @TC
Derate above 25°C

= 250 C

ODeratinG Junction TemDBt'ature Ranae
Storage Temperature Range

IR

1.0

Po

40
0.266

T

-65 to +175

°c

Tstg

-65 to +200

°c

wfOc

*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

* Indicates JEDEC

If

Registered Data.

-~

E
SEATING PLANE

FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA

F-STYlE 1:

PIN I. BASE
2. EMITTER
CASE: COLLECTO'R

M1LLlMETERS
DIM MIN MAX
I
11.94 12.70
C
6.36 8.64
D
0.71 0.88
1.21 1.91
E
F 24.33 24.4
G 4.83
5.33
H
2.41
2.67
J 14.48 14.99
VeE. COLLECTOR-EMITTER VOLTAGE {VOLTS)

The Safe Operating Area Curves indicate IC-VCE limits below
which the device will not enter secondary breakdown. Collector

load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum TJ. power-temperature derating must be observed for both steady state and pulse power conditions.

1-144

K

9.14

P
0

3.61

S

T
U

-

-

1.27
3.86
8.89
3.68
15.75

INCHES

0.470
0.250
OD28
D50

0.500
O.
0.034
0.75
0~68 0.962
.190 0.210
0.095 0.105
0~70 0.590
0.360
- 0.050
0.142 0.152
- 0.350
0.145
- 0.620

All JEDEC Oimansionsand and Notes Apply.
CASE 80-02
TO-66

2N5050,2N5051,2N5052

=25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TC

I

I

Characteristic

Min

Symbol

Max

Unit

·OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
(lC = 200 mAde, IB = 0)

Vde

VCEO(susl
2N5050
2N5051
2N5052

-

125
150
200

Collector-Emitter Cutoff Current

mAde

ICEO

(VCE = 62.5 Vde, IB = 0)

2N5050

-

0.1

(VCE = 75 Vde, IB = 01

2N5051
2N5052

-

0.1

(VCE = 100Vde,IB=01

-

0.5

25

100

(lC = 1.0 Ade, VCE = 5.0 Vdel

25

-

(I C = 2.0 Ade, V CE = 5.0 Vdel

5.0

-

1.0
5.0

VBE(on)

-

1.2

Vdc

IT

10

-

MHz

Small-Signal Current Gain
(lC = 250 mAde, VCE = 10 Vde, f = 1.0 kHz)

hie

25

-

-

Common Base Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)

Cob

-

250

pF

tr

-

300

ns

to

-

3.5

1'5

tf

-

1.2

I'S

Collector-Emitter Cutoff Current
(VCE = Rated VCEO, VEB(offl = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 1500CI
Emitter-Base Cutoff Current
(VBE = 6.0 Vde, IC = 01

0.1
mAde

ICEX

lEBO

5.0
0.1

mAde

'ON CHARACTERISTICS
DC Current Gain (Note 11
(lC = 0.75 Ade, VCE = 5.0 Vdel

Collector-Emitter Saturation Voltage (Note 11
(lc = 0.75 Ade, IB = 0.1 Ade)
(lc

-

hFE

Vde

VCE(satl

= 2.0 Ade, IB = 0.4 Adel

Base-Emitter On Voltage (Note 11
(lc = 0.75 Ade, VCE = 5,0 Vdcl
·DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 250 mAde, VCE = 10 Vdc, f

= 5.0 MHz)

·SWITCHING CHARACTERISTICS

Rise Time

(VCC = 120 Vde, IC
RL = 150 Ohms,

Storage Time

IBI

.

Fall Time

= 750 mAde,

= IB2 = 100 mAdel

Indicates JEOEC Registered Data.

Note 1: Pulse Test: Pulse Width :S;300 Il$, Duty Cycle S2.0%.

FIGURE 2 - THERMAL RESPONSE
1.0
~

Wz

~

0-0.5

0.5

~.l

:: 0.3

~~

~ ~ 0.2

~ ~ 0.1
:::;W

«:r
,,0-

ct: I-

0.05

2-- .-frrmr

~

0.0 5

-I

Iq...

12
DUTY CYCLE, D =11/12 -

~
~·91,

..--

...............

0.0 1
0.01

0.02

0.05

0.1

o
:: ==
=

PIPW::

H""

.....-.

BJClt) = rlt) 8JC
8JC = l.76·CIW Max

~

0.02

OZ
zw
~~ 0.03 -

:= 0.0

I-f-

0.1

W ....

0«

-

--::::; ;;;;;0- ~

0.2

0.5

1.0

2.0

I, TIME 1m,)

1-145

II III

5.0

10

--

20

I 111111

CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

TJ\Pk)I-IT~~~lrkIBJC(t

50

IIII

100

200

500

1000

2N519,O thru 2N:5192
®.MOTOROLA

SILICON NPN POWER TRANSISTORS
... for use in power amplifier and switching circuits, - excellent safe
area limits. Complement to PNP 2N5193, 2N5194, 2N5195

4AMPERE
POWER TRANSISTORS
SILICON NPN
40-80 VOLTS
40 WATTS

"MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

lN5190JlN519.1J lN519l

Collector-Base Voltage
EmItter-Base Voltage
Collector Current
Base Current

l

40
40

VCEO
Vce
Vee
Ie

60
60
50
40
10

18

Total Power Dissipation @TC"250C
Derate above 2SoC
Operatmg and Storage Junction
Temperature Range

I

Vd,

80

Vd,
Vd,
Ad,
Ad,

40
320

Po

TJ,T stg

--~65

Unit

80

Watts
mWjOC

to +150--

°c

THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, JunctIon to Case

*ELECTRICAl CHARACTERISTICS(TC '" 25°C unless otherwise noted)

I

Charact.,.istlc

Symbol

I

Moo

Max

Unit

OFF CHARACTERISTICS
Collector-EmltterSustalntng Voltage (1)

(lC=O.1Adc,IS"'OI

Collector Cutoff Current
(VeE =40 Vdc,'8 = 0)
(VeE = 60 Vdc, IS =0)
(VCE =80 Vdc, IS =0)

Collector Cutoff Current
(VCE=4tlVdc, VEB(off)=15Vdcl
(VCE=60Vdc,VEB(off)=15Vdc)
(VCE ""80 Vdc, VEB{off) = 1.5 Vdcl
(VCE=40 Vdc, VEBfoff) '" 1.5 Vdc,
T C = 12S0C)
(Vce=60Vdc,VEBfoff):t15Vdc,
TC" 125°C)
(Vce "'BO Vdc, VeBfoff) = 1.5 Vdc,
TC= 12SoC)
Collector Cutoff Current
(VCS =40 Vdc, Ie "" 01
(Vca '" 60 Vdc,l e =0)
(Vca =80 Vdc, Ie =01

Vd,

VCeO(sus)

2N5190
2NS191
2N5192

40
60
80
mAde

'CEO
2N5190
2NS191
2NS192

1.0

'0

10
mAdc

'CEX
2NS190
2N5191
2N5192
2NS190

0.'
0.1
O. ,
2.0

2N5191

2.0

2N5192

(lC=4.0 Adc, VCE "2.0 Vdc)

0 ..1

3.8ASE

o. ,

mAdc

leaD

1.0
hFe
2N5190
2N5191
2N5192

25
25.
20

2N5190
2N5191
2N5192

'0
,0
7.0

Collector·Em Itter Saturation Voltage(1)
tic = 1.5 Adc. IS =0.15 Adcl
flC =4.0 Adc, IS'" 1 ,0 Adcl

VCEtsat)

Base-EmltterOn Voltagefl)
(Ie'" 1.5 Adc, VCE =2.0 Vdc)

VBE(on)

100
100
80

Vdc

0.6
1.4
Vd,

1.2

DYNAMIC CHARACTERISTICS
Current-Galn-Bandwidth Product
(lc "1.0 Adc, VCE" 10 Vdc, f= 1.0 MHz)

STYlE I
PIN I. EMITIER
2. COLLECTOR

mAdc

O. ,

2N5190
2NS191
2N5192

ON CHARACTERISTICS
DC Current Galn(1)
(' C= 1.5 ~dc. VeE'" 2.0 Vdc)

K

2.0
'CSO

Emitter Cutoff Curtent
(VSE =5.0 Vdc, IC=O)

~H

MH,

'T
2.0

(1)Pulse Test: Pulse Width <.300 III, Duty Cycle<2.0%.
-Indicatel JEOEC Registered Olrta

1-146

MILLIMETERS
DIM MIN
MAX
A 10.80 11.05
7.49
7.75
8
2.41
C
2.67
0
0.51
0.66
2.92
3.1
F
2.46
2.31
G
1.27
2.41
H·
0.64
J
0.38
K 15.11 16.64
30 TYP
M
Q
4.01
3.76
R
1.14
1.40
S
0.64
0.89
3.68
3.94
U
V
1.02

INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125

•
0.148
0.045
0.025
0.145
0.040

CASE 77-04
TO·126

095
025
655

0.158
0.055
0.035
0.155

2N5190 thru 2N5192

FIGURE l-DCCURRENTGAIN

...
::;
...

0
N

..

10
7.0
5.0
3.0

0:

<> 2.0

;;
z

TJ'151JOC

-

;;: 1.0
co

-,..

-

~

- -

-1- 1-1--' --r

\

-- -

-

VCe-2.0 V f - VCE-l0V f - -

i""

~

r-

....
z

0.7
w
0: 0.5
0:

'"'-'

'-'

= 25°C

-55°C

--......;

0.3

<>

~ 0.2

0.1
0.004

0.007

0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

4.0

IC, COllECTOR CURRENT (AMP)

FIGURE 2 - COLLECTOR SATURATION REGION

~<>

2.0

~

..

w 1.6

1\

TJ = 25°C

to

~
<>

Ic=10mA

100mA

1.0A

> 1.2
0:

l::E

"i 0.8

1

1\

\

\

0:

....<>

~

3.0 A

\

1\

0.4

r-.

8

...... 1--1-

\

........

W
'-'

>

0.05 0.07

0.1

0.1

0.3

0.5

0.7

1.0

2.0

5.0 7.0 10
3.0
IB, BASE CURRENT (mA)

FIGURE 3 - "ON" VOLTAGES
2.0

II

+2.0

f5

+1.0

~

1/

1.2

~

!:i

VSE(sat)@ Ic/lS 11101

0.8

III
IVCE(oat) IlIlellB = 10

0.005

0.01

0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
IC, COllECTOR CURRENT (AMP)

'Uv fo, VCE(sat)

... +0.5

200

300

500

/

V

8

~

II

0.4

100

TJ=-650Cto+1500C

~

w

§

....

VBE @VCE = 2.0 V

>

70

UppLJsIF~~ Ilc/IBI.;; ~FU

+1.5

<3

~

<>

50

+2.5

,..s
~

TJ=250C

...

30

FIGURE 4 - TEMPERATURE COEFFICIENTS

1.6

~<>

20

-0.6

~ -1.0
~
~

,,""

....

i

2.0 3.04.0

1-147

'1 Ti'lW
I II I

-1.5

-2.0
-2.5
0.005

0.01

V

0.020.030.05 0.1
0.2 0.3 0.5
1.0
IC. COllECTOR CURRENT (AMP)

2.0 3.04.0

2N5190 thru 2N5192

FIGURE 5 - COLLECTOR CUT-OFF REGION

FIGURE 6 - EFFECTS OF BASE-EMITTER RESISTANCE

i:z:

107
~

S!

r-veE' 30 V

"-

~TJ'150~e

...........

......

I

VCE" 30 V
IC'10x ICES

"I ..........

IC~ICES

f::::== ,=:Ioooe

I:!=

r- !--

I'-..

.......

FORWARD= ~

=REVERSE

r--..

(TYPICAL ICES VALUES
OBTAINEO FROM FIGURE 5)
ICES

10-3
-0.4

-0.2

-0.3

-0.1

+0.1

+0.2

+0.3

+0.4

+0.5 +0.6

100
60
80
120
TJ. JUNCTION TEMPERATURE (DC)

40

VBE. BASE·EMITTER VOLTAGE (VOLTS)

FIGURE 7 - SWITCHING TIME EQUIVALENT CIRCUIT

~

TJ=+25 0 C

200

--II--

Vin

o-.......NV-.....- I

11

RB
131-

APPROX
+11 V
Vin -

- - -

1 1

eid« Cab
11 .. 7.0 ns

I

I

t 100<12<500jlS

I

I

I

t

t

1 ___ 1_ -'- _

--I

12 fTURN.OFF PULSE

-4.0 V
ABend AC variad
to obtain desired
cu'rent levals
DUTY CYCLE ~ 2.0%
APPROX -9.0 V

13 <15 ns

3O~~~~~~~~~~~~1
0.1

0.2 0.3

I~IIBI= lb= =

II
S;

0.3

~ 0.2
;::

TJ = 25~C

1,@VCC=30V

=

"'"N--

j

I,@VCC = 10, V

10

20 3040

2.0

--f..I.

1.0

I

M- ~i

0.7
0.5

II@VCC-30V

0.3

-'I
II@VCC'10V

w

IS1=IS~t r--

ICIIS= 10
li=ls 1/81i=
TJ = 25°C

f=
F= f=
"-

.. 0.2
;::

o. 1

O. I

td@ VEB(oll) - 2.0 V

0.07
0.05
0.03
0.02
0.05 0.07

0.5
1.0
2.0 3.0 5.0
VR. REVERSE VOLTAGE IVOLTS)

FIGURE 10 - TURN-OFF TIME

FIGURE 9 - TURN-ON TIME
2.0
1.0

r-

t"~

I

VEB(oll)

160

FIGURE 8 - CAPACITANCE

-r-

APPRO
A X Vee
~IV
Vin 0 1- -

140

300~~"'-""OT'-~TT'-""OT'-~I't"t-'

TURN·ON PULSE

j

......

IC = 2 x ICES

F= =25 0 e

0.7
0.5

....... "-

0.07
0.0 5

""'tt--.
0.1

0.5 0.7

1.0

0.2
0.3
IC. COLLECTOR CURRENT (AMP)

2.0

3.0 4.0

1-148

0.03
0.02
0.05 0.07

0.1

0.2 0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)

2.0

3.0 4.0

2N5190 thru 2N5192

FIGURE 11 RATING AND THERMAL DATA
ACTIVE·REGION SAFE OPERATING AREA
0

...'"

"

!!.

~
ox

1. 0

~

O. 5

...

that must be observed forreliable operation; I.e., the tranSistor must
not be subjected to greater disSipation than the curves indicate.

i\

Secondary breaJdown limit \

Thermal limit atTe:z 250 C
Bonding wire limit

-

-

0

de

The data of Figure 11 is based on TJ(pk} = 1500 C; TC is

r----Curves apply below rated VCEO

0

to

~

" ....... I\,

I "

TJ = 150°C

2. 0

aox

There are two limitations on the power handling ability of a
transistor; average junction temperature and second breakdown.
Safe operating area curves Indicate Ie - VeE limits of the transistor

5.0m", -1.0m,\ 100",

ii: 5. 0

2N5190 - ~

O. 2

1\

2N5191
2N5192

O. 1
1.0

5.0

2.0

10

100

50

20

variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pkl ~ 1500 C. At high
case temperatures. thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by second
breakdown.

VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

FIGURE 12 - THERMAL RESPONSE
1.0

@ 0.7 f:=D = 0.5
N

... :::;

O.5

ffi~ 0.3

~ =0' 2

... '"

r-- -0.1

~ ~ 0.07

-==

0;; ox
~ ~ 0.2
ox-

."to

::: ~ 0.1

:t ~ 0.05
.,,~

~

:g;lox 0.03 ---:;:;;.
...~ 0.02
0.01
0.01

-~

- ....

~

-:::

0.05

0JClmax) " 3120 C/W - 2N5190·92
QJClmaxl" 2 080 C/W - MJE5190·92

0.02

....t:::=

"'\I
-Single Pulse

0.01

II

I
0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

10
2.0 3.0
5.0
I. TIME OR PULSE WIDTH Im'l

20

50

100

200

500

1000

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

~~:~

A tram of periodical power pulses can be represented by the model
shown In Figure A. Using the model and the device thermal re·
sponse, the normalized effective transient thermal resistance of

n' .n"

--------~,

---:

t1

I

1

I--

:

I
1
t---1I1---1

Figure 12 was calculatad for various duty cycles.
To find @JC(t}, multiply the value obtained from Figure 12 by
the steady state value @JC.
Example:

The 2N5190 is dissipating 50 watts under the following condl'
tions: tl = 0.1 ms. tp =0.5 ms. 10 =0.21.
Using Figure 12, at a pulse width of 0.1 ms and 0 = 0.2, the
reading of rltl. 01 is 0.27.

L-_______

11

The peak rise in junction temperature is therefore:

OUTY CYCLE 0 =1]·1 = ij;

AT = rltI X Pp X@JC=0.27 X 50 X3.12 = 42.2 0 C

PEAK PULSE POWER = Pp

1-149

2N5193 thru 2N5195
MOTOROLA

SILICON PNP POWER TRANSISTORS

4 AMPERE
POWER TRANSISTORS
SILICON PNP

... for use in power amplifier and switching circuits, - excellent safe·
area limits. Complement to NPN 2N5190, 2N5191, 2N5192

4()'80VOlTS
40 WATTS

'MAXIMUM RATINGS
Rating

Symbol

2N519312N519412N5195

VCEO

40

I

60

I

80

COllector-Base Voltage

VCB

40

I

60

I

80

Emitter-Base Voltage

VEB

4---5.0

Collector Current

Ie

"--4.0

Base C:'Jrrent

IB

~1.0~

Collector·Emltter Voltage

Total Power Dlsslpatlon@Tc
Derate above 2S D C

250 e

Po

Vdc

.

.
..

_40

~320---"

Operating and Storage Junction
Temperature Range

TJ, T stg

-4--

Umt

-65 to + 150 _________

Vdc
Vdc
Adc
Adc

Watts
mW/oC

I~I

°elW

THERMAL CHARACTERISTICS
Character·istic
Thermal Resistance, Junction to Case
*ELECTRICAL CHARACTERISTICS ITc =

2SoC

unless otherWise notedl

DI,rac::teristec

Symbol

Min

Mu

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
lie'" 0.1 Adc.le = 0)

Collector Cutoff Current
(VeE = 40 Vdc, 18 '" 0)
(VeE = 60 Vdc, la = OJ
(VCE = 8OVde,la"" 0)

Collector Cutoff Current
(VCE = 40 Vde, VSE(off)
(VCE =60Vde, VeE(off)
(Vce = 80 Vde, VSEloffl
(VCE = 40 Vde, VSE(offl
TC'" 1250 Cl
(Vce - 60 Vde, VaEloff)
TC = 125°C)
(Vce = 80 Vde, VSEloff)
TC'" 125°C)

Vd,

VCEO(sus)

40
60
80

2N5193
2N5194
2N5195

mAde

ICEO
2N5193
2N5194
2N5195

'0
'0
10
mAde

Icex
= 1.5 Vdc) 2N5193
= 1.5Vdc) 2N5194
= 1.5 Vde) 2N5195

= 1.5 Vde, 2N5193

0'
0'
0'
20

1.5Vde, 2N5194

20

= 1.5Vtic, 2N5195

2.0

=

Collector Cutoff Current
(Vce = 40 Vdc, Ie = 01
(Vce = 60 Vdc, Ie = 0)
(Vce .. 80 Vde, Ie • 0)

mAde

Icao
2N5193
2N5194
2N5195

Emitter Cutoff Current
(VeE = 5.0 Vde, IC '" 0)

DC Current Gain (1 I
Oc = 1.5 Adc, VCE '" 2.0 Vdc)

IIc .. 4.0 Ade, VCE - 2.0 Vdc)

0'
0'
0'
IEeO

ON CHARACTERISTICS
2N5193
2N6194
2N6196
2N5193
2N5194
2NS196

STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE

h,.

Collector-Emitter Saturation Voltage (1)
(lc" 1.6 Adc, Ie = 0.15 Adcl
(lc ·'4.0 Ade, IS - 1.0 Adc)

VCE(sat)

ease-Emitter On Voltage (1)
(Ie = 1.6 Adc, VCE .. 2..0 Vdcl

VaElon)

,a

25
25
20
10
'0
7.0

mAde

DIM

A
B
C

o

100
100
80

F

G
H

J
Vd,

K
M

Vdc

R
S

0.6

Q

1.4
1.2

DYNAMIC CHARACTERISTICS

U

V

MILLIMETERS
MIN
MAX
10.BO 11.05
7.49
7.75
1.41
1.67
0.51
0.66
1.91
3.18
1.31
1.46
1.17
1.41
0.38
0.64
15.11 16.64
30 TYP
3.76
4.01
1.14
1.40
0.64
0.89
3.68
3.94
1.02

INCHES

MIN
MAX
0.415 0.435
0.195 0.305
0.095 0.105
0.010 0.016
0.115 0125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
3 TYP
0.148 0.158
0.045 0.055
0.015 0.035
0.145 0.155
0.040

CASE 77-04

Current-G.in,SlIndwldth Product
lic· '.DAde, VCe--10Vdc,f- 1.0MHz)

To.126

"'ndlclltHJEDEC R-ollter~ Data
(1 J Pul.. T..t: Pul.. Wldttl$ 300 "'.. Duty Cycla'S2.0,..

1-150

2N5193 thru 2N5195

FIGURE 1 - DC CURRENT GAIN

10

0: 7.0

~

TJ·1S0a C

~ 5.0
::i

-

~ 3.0

'"

~ 2.0

z

~

-'-

-

-

\I

1.0

§ 0.7

'-

V

2Sa C

VCE' 2.0 V
VCE·l0V-

r-

-r-- I--

-

r-

~ ~ 1-

-SSaC

--

-......

'" O.S
:::>

~ 0.3
c

~ 0.2

0.1
0.004

0.007

0.01

0.03

0.02

O.OS

0,3

0.2

0.1

O.S

2.0

1.0

3.0

4.0

IC. COLLECTOR CURRENT (AMP)

FIGURE 2 - COLLECTOR SATURATION REGION
~ 2.0
c

C
w

~
c

1.6

~ 1.2

'c·l0mA

100mA

~

~

g-,

8

..,w

>

1.0A

1\

0.8

TJ' 2S a C

\

0.4

0
O.OS 0.07 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0
S.O 7.0 10
IS. SASE CURRENT (rnA)

FIGURE 3 - "ON"'VOL TAGE

2.0

1.6

~c

I I

~
>

20

0.4

0.005 0.01

50

70

100

200

II 1111111

+2.0

300

500

I I II

'APPLIES FOR IC/IS

30

.s +1.5

1.2

0.8

r-

FIGURE 4 - TEMPERATURE COEFFICIENTS

TJ' 25a C

w

'""
c-'

'-.....
I'..

+2.5

C

I-

3,OA

VSE(satl @ICIIS' 10

~
VSE @VCE - 2.0 V

II

0.02 0.03 0.05
0.1
0.2 0.3 0.5
IC. COLLECTOR CURRENT (AMP)

w
~ -0.5

I-

~

~
1.0

""

~ -1.0

~

~~~(..tl @lclIs-l0

""

I-""

8

eVS for VSE

-1.5

l-

i

2.0 3.0 4.0

-2.0
-2.5
0.005

I--

I II II
0.01

0.020,03 0.05

0.1

0.2 0.3

0.5

IC. COLLECTOR CURRENT (AMP)

1-151

'"

1.0

2.0 3.04.0

2N5193 thru 2N5195

FIGURE 5 - COLLECTOR CUT-OFF REGION

FIGURE 6 - EFFECTS OF BASE-EMITTER RESISTANCE

11)3

en 107

-

r- VCE' 3D Vd,

-

r-TJ'15DoC

:E
%

e

2

~

1

-

:-.... ........

~ 106

iiia:

f

f-1DDoC

a:

....... .L
105

~

..........

r-....

.......

FORWARO= ~

:!
a:

~
~ 102
~
20

ICES
10- 3
+lI.4

+0.3

+lI.2

-0.1

+0.1

-0.2

-0.3

-0.4

-0.5 -0.6

100
120
60
80
TJ. JUNCTION TEMPERATURE (DC)

40

a:

VBE. BASE·EMITTER VOLTAGE (VOLTS)

FIGURE 7 - SWITCHING TIME EQUIVALENT CIRCUIT
TURN·ON PULSE

I
APPROX-l1V I

ViR

...

0--'1,""'-.--1

--II11
I
-I

12

j...

Vin _ _ I __ ~

I

!

APPROX
+9.0V Cjd«Ceb

~-

I I

APPROX

i"

131TURN·OFF PULSE

11.;7.0 ns
100 <12 < 600 IlS
13< l~ns
DUTY CYCLE'" 2.0%

0

RS AND RC VARIED
TO OSTAIN DESIRED
CURRENT LEVELS

0
0.1

I
0.2 0.3

IICIIBI.'h

0.7
0.5

TJ' 250 C

..,

;:::

0.1

=

=

i"".... ttOVCC'30V

........

-

f"'-o.L.

.......... .,.......

1,Il'VCC',0V-

0.07
0.05
Id@VBEloff) = 2.0 V
0.03
0.02
0.2
0.05 0.07 0.1

--

0.3

0.5 0.7

1.0

2.0

1.0

l-

IB1. IB2
IcllB = 100
Is·to 1/81,=
TJ-25 0 C

tS

0.7
O. 5

1

0.3

~

o. 2

;:::

.......

-

II@VCC=30V

II@VCC=10V

O. 1
0.07
0.05
0.03
0.0 2
0.05 0.07

3.0 4.0

0.1

0.2

0.3

0.5 0.7

1.0

IC. COLLECTOR CURRENT (AMP)

IC. COLLECTOR CURRENT (AMP)

1-152

30 40

±

FIGURE 10 - TURN·OFF TIME
2.0

1.0

0.2

20

0.5
2.0 3.0 5.0
10
1.0
VR. REVERSE VOLTAGE (VOLTS)

FIGURE 9 - TURN-ON TIME
2.0

!lil

"

Cob

100

C,b

I

-11 V

i'

~

+4.0 V

-

I'-

200

'"
z

I-

2~ot

I'---

U

I

I

T)=

~

-

300

SCOPE

RS

160

FIGURE 8 - CAPACITANCE

RC

VCC

140

500

VBE(Ofl)t}
Vin
0
---

1 0.3

........

(TYPICAL ICES VALUES
OBTAINEO FROM FIGURE 5)

. ~ 103
z

250 C

10- 2

r--.. .......

IC ",ICES

:l:

/

r--..

r-IC = 2 x ICES

iii! 104

1 = FREVERSE

VCE·30V

IC= lOx ICES

2.0

=

-

>-::

3.04.0

2N5193 thru 2N5195

FIGURE 11
RATING AND THERMAL DATA
ACTIVE·REGION SAFE OPERATING AREA

0

Note 1:

~

, .... ,

TJ=150C

§ 2.0
a'"

Stcondary

'" 1.0

1.0ms

"

I
br8a~down limit \

Thermal limit @I TC =25Q C
Bonding wire limit

- -

o

~

There are two limitations on the power handlmg ability of a

5.0 mi"--;;:

0:- 5. 0

100",

'.

transistor; average junction temperature and second breakdown.
Safe operating area curves indicate Ie' VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves Indicate.

\

de

The data of Figure 11 is based on TJ(pk)

o. 5 _Curves apply below rated VCEO

8

~

I II

0.2

I II

o. 1

10

5.0

2.0

1.0

2N5193 - ~
2N5194
2N5i95

'\

temperatures. thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.

50

20

= 1500 C. TC is variable

depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(pkJ 'Si 150°C. At high-case

100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 12 - THERMAL RESPONSE
1.0

ffi

0.7 =0-0.5

N

O•5

.... :J

~~
w~~

0.01

~ ..

0.03

'" 0.02

~

-= ."

oJC(maxl- 312°C/W

-:;;;-

..-:: 1'0-'

?! ~ o.1 -1-0.05

:± ~ 0.05

-"'"

-

~: O. 3=- 1-0.2
;;;'"
~~ 0.2
",- /-0.1
.... w

1-0.0
...t:::::

~

-

j-

0.0 1
0.01

1-0.01

r-Single Pulse

I

I I II

0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0
I.

10
2.0 3.0
5.0
TIME OR PULSE WIOTH (m,)

20

3D

50

100

200

300

500

1000

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

~~R~

n' n'

----I
---:

11

I

I

~

:

I
I
f---l/f----l

A train of periodical power pulses can be represented by the model
shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of
Figure 12 was calculated for various duty cycles.

L -_ __

11
DUTY CYCLE O' Iii" ip
PEAK PULSE POWER' Pp

To find 8JC(t). multiply the value obtained from Figure 12 by
the steady state value 8 JC.
Example:
Tha 2N5193 is dissipating 50 watts under the following condi·
tions: t1 =0.1 ms. tp = 0.5 ms. (0 =0.2).
Using Figure 12. at a pulse width of 0.1 ms and 0 = 0.2. the
reading of r(t,. 0) is 0.27.
The peak rise in junction tamperatura is therefore:
"T = rId X Pp X 8 JC • 0.27 X 50 X 3.12 = 42.2oC

1-153

215301
215302
215303

®

MOTOROLA

III]
HIGH-POWER NPN SILICON TRANSISTORS
20 AND 30 AMPERE
POWER TRANSISTORS

· .. for use in power amplifier and switching circuits applications.

NPN SILICON
•

High Collector-Emitter Sustaining Voltage BVCEO(sus) = 80 Vdc (Min) @ IC = 200 ()"lAdc (2N5303)

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
1.0 Vdc (Max) @ IC = 10 Adc (2N5303)

•

Excellent Safe Operating Area 200 Watt dc Power Rating to 30 Vdc (2N5303)

•

Complements to PNP 2N4398, 2N4399 and 2N5745

40-60-80 VOLTS
200 WATTS

-MAXIMUM RATINGS
Rating

Svmbol

2N5301

2N5302

2N5303

Unit

VCEO

40

60

80

Vde

VCB

40

60

80

Vde

IC
IB

30
30
20
-7.5---

Ade

Po

---200-1.14-

Watts
wf'c

Collector-Emitter Voltage
Collector-Ba.. Voltaga
Collector Current - Continuous

Base Current

Total Davie. Dissipation@TC=250C
Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ,Tstg

..

-65 to +200--

-

Ade

°c

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

DJC

0.875

°C/W

Thermal Resistance, Case to Ambient

DCA

34

°C/W

lr~
r~K
ESEATIN!~
PLANE

!

., ndic8tes JE DE C R eglsterad Data.

FIGURE 1 - POWER TEMPERATURE DERATING CURVE
TA TC
8.0 200

.

@
~ 6.0150

"o
~

iii

"
""

STYLE 1:
PIN 1. BASE
1. EMITIER
CASE: COLLECTOR
MILLIMETERS
DIM MIN
MAX

4.0 100

-

....

is
~

\!!

Tl

~}

A

I'-

C
0
E

TA

........

~ 2.050
~

B

.... 1'-

r--t'-

F

r--

f't--

·G

"

.... ....

o0
20

40

60

80

100

120

140

160

H

~~"
180

200

TEMPERATURE I'CI

J
K
Q

R

INCHES
MIN
MAX

-

-

39.37
11.08
7.61 0.150
1.09 0.039
3.43
19.90
30.40 1.177
10.67
11.18 0.410
5.33
5.59 0.110
16.64 17.15 0.655
11.18 11.19 0.440
3.84
4.09 0.151
16.67
Collector connected to case.
CASE "·01
6.35
0.99

-

(TO·3)

1-154

NOTE:
1. DIM "Q"IS OIA.

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.110
0.675
0.480
0.161
1.050

ELECTRICAL CHARACTERISTICS (TC = 250 unless otherwise noted 1

VCEO(1U11
2N5301
2N5302
2N5303

lie" 200 mAde, 'S '" 0)

Collector Cutoff Cumrnt
(VeE'"' 40 Vdc. 'a - 0)
(Vee" 60 Vdc.IB = 01

2N5301

(VeE" 80 Vdc.IB" 01

2N5303

Itt

2N5302

-

-

mAde

10
10
10
mAde

ICBO

-

1.0
1.0
1.0

-

5.0

lEBO

ON CHARACTERISTICS
UL; (.;Urrent (jam {Note

I,.

mAde

-

2N5301
2N5302
2N5303

(Ves = 80 Vdc, Ie = 01

Vde

mAde

2N5303

Emitter Cutoff Current
(VSE '" 5.0 Vdc, Ie .. 01

mAd.

hFE
2.0Vdcl

40
15
15
5.0
5.0

ALL TYPES

2N5303
2N5301.2N5302
2N5303
2N5301.2N5302

-lie'" 10 Adc, VeE" 2.0 Vdc)
"Ue'" 15 Adc. VeE" 2.0 Vdcl
(Ie"" 20 Adc. VeE = 4.0 Vdc)
(Ie" 30 Adc. VeE'" 4.0 Vdc)
"Collector-Emitter Saturation VOltage (Notal)
(Ie'" 10 Adc. IS = 1.0 Adcl

eo
eo
Vd.

VCElsati
2N5301,2N5302

(Ie = 10 Adc. Is

= 1.0 Adcl
lie'" 15Adc. IS = 1.5AdcI
lie = 20 Adc. 's = 2.0 Adc)

2N5303
2N5303

(Ie'" 20 Adc, 's .. 4.0 Adcl

2N5303
2N5301.2N5302

0.75
1.0
1.5
2.0
2.0
3.0

2N5301.2N5302

Ue=30Adc.ls=6.0Adc)
*Sase-Eminer Saturation Voltage (Note 11

Vd.

VSElsatl

IIC' 10Adc.la-l.0Adcl
IIC·'5Adc.la"I·5Adcl

ALL TYPES
2N5301.2N5302

Ue'"' 15 Adc. IS '" 1.5 Adcl

2N5303

2.0 Adcl

1.7
1.8
2.0
2.5
2.5

2N5301.2N5302

2N5303

(Ie" 20 Adc. 'S c 4.0 Adcl
*Sase-Emitter On Yoltage (Note 11
IIC' 10 Adc. VCE = 2.0 Vdcl
lie" 15 Adc. Yee

1.0
1.0
1.0

IceX

IVCB • 40 Vdc. IE • 01

=

-

2N5301

(Vea .. 60 Vdc. Ie "" 01

20 Ado. la

5.0
5.0
5.0

-

Collector Cutoff Current

=

-

ICEX

IVCE • 40 Vde. VEalofli • 1.5 Vd•• TC - 150CCI
(VeE =60Vdc. VEstoff) oc1.5Vdc. TC· 1500CI
IVCE' eo Vdc. VEalalll.- 1.5 Vd•• Tc' lsOCCI

IIC

-

2N5301
2N5302
2N5303

Collector Cutoff Current

=

40

IceO

80 Vdc. VEBfoff) "" 1.6 Vdc)

·(lC= 1.0 Adc. VeE

eo
eo

2N5302

Collector Cutoff Currant
(VeE"" 40 Vdc, VEstaff)" 1.6 Vdcl
(Vee" 60 Vdc, VES/off) = 1.6 Vdc)
(VeE

Unit

Min

Symbol
·OFF CHARACTSRISTICS
Collector-Emitter Sustaining Voltage fNote ,)

= 2.0 Vdc)

Vd.

VBElon)

2N5303
2N5301.2N5302

.

lie .. 20 Adc, VeE" 4.0 Vdc)
IIc .. 30 Adc, VCE = 4.0 Vdcl

1.5
1.7
2.5
3.0

2N5303

2N5301.2N5302

-DVNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Produ,ct
(lC"1.0Adc. Vee =10Vdc.f= 1.0 MHz)

IT

2.0

Small-Signal Current Gain
(Ie'" 1.0Ade. VCE -10Vdc,f"1.0kHzI

hie

40

MHz

-SWITCHING CHARACTERISTICS

1.0
(VCC=30Vdc. 'C·,0Adc, IS1 = '82= 1.0Adc)

• Indica. . JEDEC R-el ....rect Oate.
Note1: Pulse Test: Pul. Width ~ 300 1'8. Outy Cvel. S

2.o".

SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 2 - TURN-ON TIME

FIGURE 3 - TURN-OFF TIME

VCC

INPUT PULSE

t,<2Dns
PW-lUto lUU.,

+3UV

tr.c;20 ns
PW= 10to lUU",

v

DUTY CYCLE' 2.U%

DUTY CYCLE' 2.0%

''''--p

VCC

INPUT PULSE
+3U

""[1

3.U

TO
SCOPE

lU

TO
SCOPE

10

U --------

tr~20ns

-2.0 V

3.U

tr<20ns

-9.U V - - - - - 0: COLLECTOR·BASE OlOOE
OF 2N3252.

'::'

1-155

'::'

Vaa= 7.0 V

2N5301, 2N5302, 2N5303

lIB

FIGURE 4 - THERMAL RESPONSE
1.0
0.1

ffi
US

~~

. ..,

0.5

w

0.3

> z

0.2

~~.,

"\

Iriiiii

~

tt;

Si
~

0.1
~ 0.07

I
~~



0.3

;::

0.2

TJ - 25°C Ilo/lr=1 01-

1.0

!

.... VCC·JOV

0.5

IIOVcc-30V

0.3

IIIIIVCC-l0V

"'IIVOB'2.0V

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5,0

10

0.1
0.03 0,06

20 30

Ie, COLLECTOR. CURRENT IAMPI

IB1-IB2
lelIB"0
..·....-1/811

'

K

J

0.07
0.05
0,03 0,05

50

0,1

II

0,3 0.6

r- "1.0

3.0 5.0

IC, COLLECTOR CURRENT IAMPI

1-156

l-

0.7

.... VCC·,0V
0.1

..
K

"""'i--

I"
j

"

30

nT~C

3.0

1.0
'0.7
0.5

20

10

FIGURE 8 - TURN-OFF TIME

FIGURE 7 - TURN'()N TIME

j

5.0 7.0

VR, REVERSE VOLTAGE IVOLTSI

5.0

2,0

- -

200

2N5301
2N5302
2N5303

0.1

- -

Cib

c::;

~

TC = 250 C

0.2
1.0

~

Secondary Breakdown limited

- Bonding Wire Limited
oj 1.0 ~--- Thermal Limitations
o
~
Pulse Duty Cyel• .;; 10%
~ 0.5

TJI'25~C

~ 1000
de

-t- TJ-200oC

=:

2000

....

10 ~~N5303

5.0

3000

""
10

30

2N5301, 2N5302, 2N5303

FIGURE 10 - COLLECTOR SATURATION REGION'

FIGURE 9 - DC CURRENT GAIN
300
TJ = 1750 C

200

~

z

;;: 100

'"

~i'l

70

co

30

1--

-...;

250 C

-

50

~t'

w

'"~

U.l

0.3 0.5

1.0

3.0 5.0

1.6

IC=2.0A

>

...'"~

J

T)= J5 CI

lOA

5.0 A

20A

1.2

.

I\,

~ 0.8

I

co

~

i
0.4

~

>

3D

10

II

II

co

'" ~,

20

10
0.03 0.05

~

.~'\..

-55 0 C

I r 1111
II 1111

c

VCE-2.oV-

- .,

;;;;>~

u

:#

_LI

g 2.0

!.2L VCPloV I

~

0.D1

0.02

0.05

IC, COLLECTOR CURRENT (AMP)

0.1

0.5

0.2

1.0

2.0

5.0

10

IB, BASE CURRENT (AMP)

FIGURE 12 - "ON" VOLTAGES

FIGURE 11 - EFFECTS OF BASE-EMITTER RESISTANCE
VCE-30V-+-

2.0
1.8

IC - 2 x ICES=!===
IC =10 x ICES t - -

1.6

IT~12~50C

gc 1.4
~
w

'"':i'"

1.2

7

1.0

I

VBE(..,)@ICIIB= 10

co O.S

>

.,; 0.6

I----

Typical ICES V,lues Obtainad
103 ~ From Fi.gure 13

1--j
1/

/

VBE(on)@VCE=2 .OV
III"III.~
VCE(..,)@ICIIB=10

0.4
0.2

II
J

102
20

40

60

SO

100

120

140

160

180

0.03 0.05

200

0.1

TJ,JUNCTION TEMPERATURE (DC)

102

S +2.5

f-- VCE =30 V- t-7" f- TJ = 1750C

'"c

!

100

ffi

;:;

===

F

g;

-0.5

0:

-1.0

~

r=

~~

Forward

i

10-3
-0.2

-0.1

~

'/

II

"BVC for VCE(.')

w

10-2

-0.3

-

8

IC=ICES

~ f= Revena

-0.4

"AppliesfDr ICIIB < hFEl2

+1.0

$ +0.5

250C - t - -

10-1

u

~

1000C

101

30

III

:rJ = -550C'0 + 1750 C

...

.;!.

ii'l

1111

~ +2.0
E

;;; +1.5

...

10

FIGURE 14 - TEMPERATURE COEFFICIENTS

FIGURE 13 - COLLECTOR CUT-OFF REGION
103
;(

0.3 0.5
1.0
3.0 5.0
IC, COLLECTOR CURRENT (AMP)

0.1

0.2

0.3

0.4

0.5

0.6

-1.5
-2.0
-2.5
0.03 0.05

WVB for VSEb.,)

]]
0.1

I
0.3 0.5

/

1.0

3.0 5.0

IC, CO LLECTO R CU RRENT (AMP)

VSE, BASE·EMITTER VOLTAGE (VOLTS)

1-157

10

30

2NS336

®

thru

2NS339

MOTOROLA

BJr-----------.
MEDIUM-POWER NPN SILICON TRANSISTORS

5 AMPERE

· .. designed for switching and wide band amplifier applications.
•
•

POWER TRANSISTORS
NPN SILICON

Low Coliector·Emitter Saturation Voltage VCE(sat) =1.2 Vdc (Max) @ IC =5.0 Amp
DC Current Gain Specified to 5 Amperes

80-100 VOLTS
6 WATTS

• Excellent Safe Operating Area
• Packaged in the Compact TO-39 Case for Critical Space· Limited
Applications
• Complement to 2N6190 thru 2N6193

MAXIMUM RATINGS
Symbol

2N5336
2N5337

2N5338
2N5339

Unit

VCEO

80

100

Vdc

Collector-Sase Voltage

VCS

80

100

Vdc

Emitter·Base Voltage
Collector Current - Continuous
Base Currant
Total Device Dissipation@Tc= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

VES
IC

6.0
5.0

Vdc

IS

1.0

Po

6.0

34.3

Adc
Watts
mW/oC

T J. Tstg

-65 to +200

°c

Rating
Collector-Emitter Voltage

Adc

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
6.0

~

r

~

~

O

~ 4.0

~~

~

3.0

~

C
~

~ 2.0

I

l<

.P

I

1.0

a

a

20

40

60

80

100

~

140

120

r-.....

.......

160

~

180

200

Te, CASE TEMPERATURE (OCI

Safe Area CUNes are indicated by Figure 5. All limits are

~pplicable

MILLIMETERS
MIN MAX
8.89 9.40
8.00 8.51
6.10 6.60
0406 0533
0.229 3.18
F
0.406 0.483
G
4.83 5.33
H
0.711 0.864
J
0.737 1.02
K
12.70
L
6.35
45 0 NOM
M
p
1.27
Q
900 NOM
R
2.54

DIM
A
S
C
D
E

~

and must be observed.

INCHES
MIN
MAX
0.350 0.370'
0315 0.335
0.240 0.260
0.016 0.021
0.009 0.125
0.016 0.019
0190 0.210
0.028 0.034
0.029 0.040
0.500
0250
45 0 NOM
0.050
900 NOM
0.100

-

AllJEDECdlmenslonsand notes apply.

CASE 79-02
(TO-39)

1-158

2N5336 thru 2N5339

ELECTRICAL CHARACTERISTICS (TC = 26°C, unle.. otherwise noted)

I

I

Characteristic

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

(lC

.

= 50 mAde, IB = 0)

Fig. No.

Symbol

-

BVCEO(sus)

-

= 75 Vdc, IB = 0)
= 90 Vde, IB = 0)
= 1.5 Vde)
= 1.5 Vde)
= 1.5 Vde,

2N5336, 2N5337
2N5338, 2N5339
2N5336,2N5337

= 1.5 Vde,

2N5338,2N5339

IC

(lC

= 2.0 Ade, VCE = 2.0 Vde)

(lc

= 5.0 Ade, VCE = 2.0 Vde)

Collector-Emitter Saturation Voltage

(lc
(lC

= 2.0 Ade, IB =0.2 Adc)
=5.0 Ade, IB =0.5 Ade)

Base-Emitter Saturation Voltage

= 2.0 Ade,
(I" = 5.0 Ade,
(lC

IB
IR

hFE

9,11,13

.

-

1.0

-

1.0

-

10
10

-

100

30
60
30
60
20
40

-

mAde

I'Ade

.

2N5336,2N5338
2N5337,2N5339
2N5336,2N5338
2N5337,2N5339
2N5336, 2N5338
2N5337,2N5339

.

-

10
10

lEBO

8

= 500 mAde, VCE = 2.0 Vde)

-

I'Ade

ICBO

-

=0)

ON CHARACTERISTICS
DC Current Gain *
(lC

100
100
I'Ade

2N5336, 2N5337
2N5338, 2N5339

Emitter Cutoff Current

11,13

= 0.2 Ade)
= 0.5 Ade)

III

I'Ade

-

ICEX

-

= 80 Vde, IE = 0)
= 100 Vde, IE =0)

Unit

-

-

Collector Cutoff Current

= 6.0 Vde,

-

ICED

12

(VCE = 75 Vde, VEB(off)
(VCE = 90 Vde, VEB(off)
(VCE = 75 Vdc, VEB(off)
TC = 150°C)
(VCE = 90 Vde, VEB(off)
TC = 150°C)

(VBE

80
100

2N5336, 2N5337
2N5338,2N5339

Collector Cutoff Current

(VCB
(VCB

Max

Vde

2N5336, 2N5337
2N5338,2N5339

Collector Cutoff Current

(VCE
(VCE

.

Min

-

VCE(se!)

.

VBE(s.!)

.

120
240

Vde

-

0.7
1.2

-

Vde

-

1.2
1.8

30

-

-

250

-

1,000

-

100

ns

100

ns

2.0

1"

200

ns

DYNAMIC CHARACTERISTICS

-

Current-Gain-Bandwidth Product

(lC

= 0.5 Adc, VCE = 10 Vde, I = 10 MHzl

Output Capacitance

(VCB

7

(VBE

pF

Cob

= 10 Vdc, IE =0, I = 100 kHzl
7

Input Capacitance

MHz

IT

pF

Cib

= 2.0 Vdc, IC = 0, I = 100 kHzl

SWITCHING CHARACTERISTICS

=3.0 Vde,
= 2.0 Ade, IBI = 0.2 Ade)
(VCC =40 Vdc, IC = 2.0 Ade,
IBI = IB2 = 0.2 Ade)

Delay Time

(VCC - 40 Vde, VEB(olf)

Rise Time

2,3

td

(lC

Storage Time

.

Fall Time

t,
2,6

Is
tl

Pulse Test: Pulse Width .. 300!'S, Duty Cycle .. 2.0%.
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
-11.6V

+40 V

1i---+37V

-.J

~10I's--1

tr tf';;;; 10 ns
O:C. = 1.0%

T

Lov

INPUTPUL.SE

51

FIGURE 3 - TURN-ON TIME
10

VCC

62

5.0
2.0

20

82

j

0.5

";:::

0.2

w

t,@VCC-20V
0.1

lN914

0.05

====

TJ=25 0 C

td@VES(off)-6.0V

"'01

1.0

ICIIS = 10

tl~VCC [SOt

"-

""

td @VEB(off) = 4.0 V

"""
.......

0.02

-3.3 V

0.0 1
0.01

0.02

0.05

0.1

0.2

0.5

1.0

IC, COLLECTOR CURRENT (AMPS)

1-159

2.0

5.0

10

2N5336 thru 2N5339

..

FIGURE 4 - THERMAL RESPONSE

>~

1.0
0.7
0.5

0' 0.5

a: w

"

0,3

0.2

wZ
:: ~
t;~

0.2

~

o. 1

~

>-",
wu>

tt:

w~

0.1

cw,",
< 0.07
!:::!
a: 0.05
~w

..... -

0.03

Z

0.02

'"

0.01
0.01

+:

-=-

i"""

0.05

-

....

i·~

o

-

~

I-

SINGLE
PULSE

.02

'nIl
l

SINGLE PULSE

TJ(pk) - TC - P(pk) 8JC(I)

DUTY CYCLE. 0' 11/12

IIIII
0.2

0.05 0.07 0.1

'0 CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATll

k)

~-J

0.01

I
0.02 0.03

8JC(I) - ,(t) 8JC .
8JC' 29.20C/W~a~

0.3

0.5 0.7 1.0

2.0

3.0

I I III

5.0 7.0 10

20

30

50

I I I I I II

70 100

200 300

500 700 1000

I. TIME OR PULSE WIOTH (m,)

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
10

.

5.0

1.Oms

S 2.0
>-

0.5

'">-0

0.2

~

~

1.0 I==TJ' 2000 C

~

G

that must be observed for reliable operation;

~.

i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) =
20o"C; T C is variable depending on conditlons_
Pulsecurvesare valid for duty cyclasof 10% pro~
videdT J(pk) ,; 20o"C. T J(pk) mav be calculated

5.0ms

de

f--

0.1 ~ ......:. _ _

0

(.) 0.05
~
0.02

There are two limitations on the power handling abilityof a transistor: junctiontemperature
and secondary breakdown. Safe operating area
curves indicate Ie-VeE limits of the transistor

100jlS

ie

_ _

f= - - - - -

0.01
2.0

1.0

3.0

Secondary Breakdown limited
Bonding Wire limited
Thermal limitations Te - 25°C
Pulse Dutv Cycle .0:::: 10%
Applicable for Rated BVCEO
2N5336.37
2N533B.39
5_0 7.0 10
20
30
50 70 100

from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than
the limitations imposed by secondary breakdown.

VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 6 - TURN-OFF TIME
10
7.0
5.0
3.0
2.0

'0;

""'";:::
w

1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02

FIGURE 7 - CAPACITANCE vorsus VOLTAGE
1000
IBl

Is

r-........

70 0
500

TJ' 25 0 C

~ 300

If@VCC=BOV

~ 200

) - - - rlf@VcC·20V

c;

§

r-....

-

r-

Cib

r-r-.

100

-

T] =i5.lc

-..... r--.

70

0.01

0.01

-

IB2

IcllB -10

0.02

Cob

50
0.05

0.1

0.2

0.5'

1.0

2.0

5.0

10

1.0

2.0

3.0

5.0 7.0

10

20

30

VR. REVERSE VOLTAGE (VOLTS)

IC. COLLECTOR CURRENT (AMPS)

1-160

50

70

100

2N5336 thru 2N5339

FIGURE 9 - COLLECTOR SATURATION REGION

FIGURE B - DC CURRENT GAIN

-

1000
70 0
SOO

z 30 0

'"

~

=>

0
0

"

~

-

~

F- ~

~

100

u
u

-

...

-

1.6

~

1.4

"~

1.2

iilg;
~R

0

_

-

0

m1 1 11
1111 I

1.8

~

IC= 100 rnA

0.020.03 O.OS

0.1

-

-

III

-

3.0 A

1.0 A

TJ=2Soc-

O.B
0.6
0.4

~ O. 2

>

10
0.0070.01

R=R-

lffi--

~ 1.0

-SSoC

~

2.0

C

VCE=IOV
-

TJ '" 1~50C

200

~

-'-t~

---

;;:

-

0.2 0.3

O.S

2.0 3.0 5.07.0

1.0

t'-...

r;;...:

0
O.S

1.0

2.0 3.0

5.0

10

20 30

50

100

200 300

sao

IB, BASE CURRENT (rnA)

IC, COLLECTOR CURRENT (AMPS)

FIGURE 10 - EFFECTS OF BASE·EMITTER
FIGURE 11 - ON VOLTAGES

RESISTANCE
108

1.0

-

0.9

VCE 30V-

r-..

O.S

IC - 10 X ICES

~

6

C
c=IC 2 X ICES

........

j----

0.5 f--0.4

r-..

VSE(sat)@ IC/IS = 10

TJ = 2SoC
I

0.3

0.1

f--

a
20

40

60

80

100

120

140

160

180

200

0.01

0.02

0.05

~

+5.0

VCE 30 V -

+4.0

-

~

+3.0

-

I-

~ 10-6

~

0.4

10

0.6

I

2.0 '3.0 5.0

10·

1/

I

~II

)

V

I I II I

-2.0

l-

i
0.2

S.O

~ -3.0

FORWARO

~250C
-0.2

2.0 3.0

0V8 for VSE(sat)

~ -1.0

IC = ICES

10-9
-0.4

'III

,lsi I f I vi
I ~C °IICWtll:

w

-

1.0

~o'lill I
TJ = -550~ U1+17~Ocl

8

I------' lDooe

~ 10-8 t;::-'REV~RSE

0.5

IClis=

U
~ +1.0

.--

B

~

~

~ +2.0

S -TJ = 17SoC

lO-

7
10'

0.2

FIGURE 13 - TEMPERATURE COEFFICIENTS

FIGURE 12 - COLLECTOR CUT·OFF REGION

l(! 10-4

0.1

IC, COLLECTOR CURRENT (AMPS)

10'3

l-

~

.-

VCE("t)@ IC/IS = 10

TJ,JUNCTION TEMPERATURE (OC)

i

~

.L.H-t+lfr::
Js~ ~ )C~ ~ I}L

0.2

Obtained From Fig. 12)

102

o

0.6

"~

">

.......

(Typical ICES Values

F=

f--

0.7

w

'"
IC -ICES

I 1111111

O.B

1.0

-4.0

-5.0
0.01

0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

IC. COLLECTOR CURRENT (AMPS)

VSE, SASE·EMITTER VOLTAGE (VOLTS)

1-161

2N5344
2N5345

®

MOTOROLA

OJ
HIGH VOLTAGE POWER PNP SILICON TRANSISTORS

1 AMPERE

designed for high-voltage switching and amplifier applications.

POWER TRANSISTORS
PNP SILICON

• High Voltage Ratings - VCEO = 250 and 300 Vdc
• Fast Switching Times - Typically Less Than 550 ns
Total @ VCC = 100 Vdc

250-300 VOLTS
40 WATTS

• High Current-Gain-Bandwidth Product fT = 60 MHz (Min) @ IC = 100 mAdc
• Packaged in the Compact, High-Efficiency TO-66 Case
MAXIMUM RATINGS

Rating

Symbol

2N5344

2N5345

Unit

VCEO

250

300

Vdc

Collector-Base Voltage

VCB

250

300

Vdc

Emitter-Base Voltage

YEB

5.0

Vdc

IC

1.0

Adc

IB

0.5

Adc

PD

40

Watts

228

mW,C

-65 to +200

·C

Collector-Emitter Voltage

Collector Current - Continuous
Base Current - Continuous
Total Device Dissipation @TC

= 25° C

Derate above 25 0 C
Operating and Storage Junction
Temperature Range

T J , T stg

;

-U-i
\- 8 - -

P

l-t- ------II
-E

THERMAL CHARACTERISTICS

SEATING PLANE

Characteristic

Max

Thermal Resistance, Junction to Case

STYLE 1:
PIN 1. 8ASE
2. EMITTER
--- F- CASE: COLLECTOR

4.38

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
50

I

45

~

40

...........

~ 35

r-....

~

~ 30

.........

I'-...

;::

::
ill

25

.........

r--.....

C 20

l!'"
~

15

~

10

a

H

"~

I'-..

~

5.0

~

0
0

20

40

60

80

100

120

140

160

TC, CASE TEMPERATURE lOCI

~
180

200

MILLIMETERS
DIM MIN MAX
B 11.94 12.70
C
6.35 8.64
0
0.71 0.86
1.27
1.91
E
F 24.33 24.43
G 4.83 5.33
H 2.41
2.67
J
14.48 14.99
K
9.14
P
1.27
Q
3.61
3.86
S
8.89
T
3.68
15.75
U

-

INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0.210
0.095 0.105
0.570 0.590
0.360
0.050
0.1·42 0.152
0.350
0.145
0.620

-

-

All JEDEC Dimensions and and Notes Apply.

Safe Area Curves Are Indicated Bv Figure 5.

CASE 80-02

All Limits Are Applicable And Must Be Observed

TO-66

1-162

2N5344, 2N5345

ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Characteristic

OFF CHARACTERISTICS
Collector-Emiller Sustaining Voltage (1)
(IC = 10 mAde, 'B = 0)
Collector Cutoff Current
(VCE = 225 Vde, VBE(off)
(VCE = 270 Vde, VBE(off)
(VCE = 225 Vde, VBE(off)
TC= 150°C)
(VCE = 270 Vde, VBE(off)
TC=150°C)

5

-

250
300
10,12

= 1 5 Vde)
= 1 5 Vde)
= 1.5 Vdc,

Vdc

VCEO(sus)

2N5344
2N5345

/'Ade

'CEX

-

2N5344
2N5345

100
100

-

2N5344

-

10

2N5345

-

10

-

0.1

-

01

25
7.0

150

-

30

-

1.5

60

-

mAde

= 1.5 Vde,

-

Collector Cutoff Current
(VCB = Rated Vcs, 'E = 0)

-

Emitter Cutoff Current
(VBE = 5 0 Vde, IC = 0)

mAde

ICBO

mAde

'EBO

-

ON CHARACTERISTICS
DC Current Gain (1)
(lC = 500 mAde, VCE = 5.0 Vde)
(IC = 1 0 Ade, VCE = 5.0 Vdc)

8

9,11,13

Collector-Emitter Saturation Voltage

-

hFE

Vde

(IC = 1 0 Ade, IS = 0 2 Ade)
11. 13

Base-Emitter Saturation Voltage

-

VCE(sat)

Vde

VSE(sat)

(IC = 1.0 Ade, IS = 0 2 Ade)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC = 100 mAde, VCE = 20 Vde, f = 10 MHz)

MHz

fT

7

Output Capaclta nee
(VCB = 10 Vde, 'E = 0)

pF

Cob

-

200

SWITCHING CHARACTERISTICS
Turn-On

(Vee = 100 Vde, Ie = 500 mAde,

2,3

ton

-

200

ns

2,6

toft

-

700

ns

'Bl = IS2 = 50 mAde)
Turn-Off

(Vee = 100 Vde, Ie = 500 mAde,

ISl = 'B2 = 50 mAde)
j1) Pulse Test Pulse WIdth = 300

FIGURE

2-

p.S,

Duty Cycle = 2 0%

SWITCHING TIME TEST CIRCUIT

FIGURE

3-

TURN-ON TIME

1000
VBB

I

10V

+18,2 V

1

~ __ -20V

5,0 IlF

INPUTPULSE

tr, tf:s5.0 ns
PU LSE WI DTH = 1.0 Il'
DUTY CYCLE = 2.0%

70

200

VCC
-100 V

700

500

200

300
200

200

SCOPE

!Ii!
;::

IC/IB = 10
Tr 25 0 C

.......

tr @lVCC=100V

......

100

tr@lVCC=30V

--........c

r- :::::--.......

~

-

70

50
lN916

td@lVOB=O,85V

30
20

II

10
0.05

0.07

0.1

I
0.2

0.3

IC. COLLECTOR CURRENT (AMP)

1-163

0.5

0.7

1.0

2N5344, 2N5345
FIGURE 4 - THERMAL RESPONSE
1.0

-

0.7

~
v;
~

0.3

UJ

z 0.2

0=0.5

0.5

~~

~~
fdc;;
tt ~

..",

I I
0.2
0.\

0.1

~ iO.07

:i ~O.05
:EIg;z 0.03
0.02
0.01

0.02

-.......-

nn

i"""

l-

SINGLE
PULSE

,

8JC(t) = r(t) 8JC
8JC = 4.38D CIW Max

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATtl

i.272-1
DUTY CYCLE, 0 = 11/12

TJ(pk)- TC = P(pk)8JCh)

~iOI

~

~

i,....--: ?

,.,.,.

-T'

...-n

II-

...- ..... 1- ~

-

I--

0.05

w-'

:g

-I-

Single Pulse

II

til II

0.01

0.02 0.03

0.05

0.2

0.1

0.3

0.5

2.0

1.0

3.0
I,

5.0

10

20

30

50

100

200 300

500

1000

TIME (m.)

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
1.0
0.7
0.5
0:

"'

0.3

:E

:'!:
I-

"\

0.2

~

0.1

~

0.07

'" 5.0ms~~.om.\

i'-

~

sistor that must be observed for reliable operation; i.e., the tran·
sistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 5 is based on T J(pk) = 200 o C; T C is variable depending on conditions. Pulse curves are valid for du!V
cycles of 10% provided TJ(pk) :s; 200"C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by secondary breekdown.

de

j 0.05

8

There are two limitations on the power handling ability of a
transistor:
junction temperature and secondary breakdown.
Safe operating area curves indicate IC-VCE limits of the tran-

100~.

\

to

g;
<.>
to

\

\

1'\

~

"-

0.03

r--

0.02

rH

-

0.01

'\.

,TJ = 200 DC
SECONDARY 8REAKDOWN LIMITATION
PULSE DUTY CYCLE :510%
2N5344 ~ ["
~urv8S apply below
2N5345, ratod VCEO.

20

30

40

50

'.
70'

'\ 1\

""

II

100

k

300

200

400

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 7 - CAPACITANCES

FIGURE 6 - TURN-OFF TIME
1000

1000

700

300

...

200

w

100

--

70

;::

500

r-....

-.;:"""

..... ' .....

.E'
:E

TJ = 25DC

IS

SOD

TJ·25D C
'l;, 200

........
........

~f@VCC=100V

w
<.>

..... ~

i"'--I'-o

Z

~

100

~

50

U

If@VCC-30V

50

~ib

300

..;

30

Cob

30
181 = iS2
Ic/18 = 10

20

20

"'=I.-1/8If
10

10

0.05

0.D7

0.1

0.2

0.3

0.5

0.7

1.0

IC, COLLECTOR CURRENT (AMP)

O. I

0.2 0.3 0.5

1.0

2.0 3.0

5.0

10

V R, REVERSE VOLTAGE (VOLTS)

1-164

20 30

50

100

2N5344, 2N5345

TYPICAL DC CHARACTERISTICS
FIGURE 8 - DC CURRENT GAIN
300

r-

TJ = 1750C

-

200

..
'"

100

......
c

30

r-

z

....z
w
'"
'"

FIGURE 9 - COLLECTOR SATURATION REGION
1.0

2SoC

~
w

0

>

~

0.6

~

~

20

---

VCE = 10 V
VCE= 1.0V

--

10

Ic=10mA

~
a:0

0.4

j
0
'"

0.2

\

1.0

2.0 3.0

5.0

10

20 30

SO

100

0.1

0.2 0.3 O.S

1.0

~

~

VCE=30V -

r

..............

10 6

""-

105

i---

1 -'---

-'
«
z

~

102

+J ~ ~so~I

-

I--IV~E!sa,) @, ICIIB = S.O '010

~

00

IT

i 1'1111 1

-

......

I',

0.2

-

~

rn

100

MO

1~

100

WO

1.0

FIGURE 12 - COLLECTOR CUT-OFF REGION

~

I

/

~

10-4

oS

r-- TJ = 1750C

L

/

~
~

10-5

10-6

c
....

~ 10-7
:j
0

'"

!J

10-B
10-9

+l.S ' - -

2.0 3.0 S.O

VCE- 30 V

=

0.3

0.2

fE

I TI

J-slsdcl

200 300 SOD 1000

,

rJillll

III IIII

+0.5

'eVC for VCE(,.,)

w

8

w

~

-1.5

i

-2.0

eVB for VBE(sa')

II II

-2.5
0.1

100

Ilgsoi

0.2

-

~ -1.0

250C
0.1

SO

~

:;: FORWARD
REVERSE
-I
)--)
I/,

-+

20 30

~ -0.5

:;::: ICFS

=

=

10

~

-

VCE(..,)@ ICIIB = 10

II I

+1.0

<3

~ ~1000C_

r-:::

'APPLIES FOR IcllB ~ hFE/2

~ +2.0

J

a:

...
a:

'"

FIGURE 13 - TEMPERATURE COEFFICIENTS
+2.S

/

::>

100

IC, COLLECTOR CURRENT (rnA)

10-3

,.

SO

VBE@VCE= 1.0 ~

TJ,JUNCTION TEMPERATURE (DC)

~

1. .....

~p

I I ICIIB = S.O -r

.........

w

20 30

k
f'

....... .......

xw

a:

0.6

~

IC-ICES"""
103

10

§;. 0.4

;li 104

ffi
....

~o
'"«

IC = 2.0 ICES

lil

S.O

"ON"VOLTAGES

O.B

~
w

10 ICES

IC

2.03.0

FIGURE 11 -

lOB

~

1.0

IB, BASE CURRENT (rnA)

FIGURE 10 - EFFECTS OF BASE-EMITTER RESISTANCE

"'"' "'

500 rnA

o

200 300 500 1000

IC, COLLECTOR CURRENT (rnA)

107

\

I""--r-.

~

>

3.0

'"
'"
~

150 rnA

\

t;

S.O

,.:z:'"
2
...wz

III

TJ = 25 0C
O.B

'"«~

-

r- '- -5SoC
50

III

~

0

0.3

0.4

0.5

0.6

0.7

VBE, BASE·EMITTERVOLTAGE (VOLTS)

1.0

2.0 3.0 5.0

f-

IIII
10

20 30

SO

100

IC, COLLECTOR CURRENT (rnA)

1-165

200 300 500 1000

2N5346
thru
2N5349

®

MOTOROLA

7 AMPERE

MEDIUM-POWER NPN SILICON TRANSISTORS
POWER TRANSISTORS
NPN SILICON

· .. designed for switching and wide-band amplifier applications.
•

Low COllector-Emitter Saturation Voltage - VCE(sat) ~ 1.2 Vdc
(Max) @ IC ~ 7.0 Adc

•

DC Current Gain Specified to 5 Amperes

80-100 VOLTS
60 WATTS

• Excellent Safe Operating Area
• Packaged in the Compact, High Dissipation TO-59 Case
• Isolated Collector Configuration
• Complementary to 2N6186 thru 2N6189

.MAV'U"M

RATINGS
Symbol

2N5346
2N5347

2N5348
2N5349

Unit

VCEO

80

100

Vdc

Collector-Base Voltage

VCS

BO

100

Vdc

Emitter-Ba.e Voltage

VES
IC

6.0

Vdc

7.0

Adc

Base Current

Is

1.0

Adc

Total Device Dissipation @TC: 25°C
Derate above 25°C

Po

60

343

Watt.
mW/oC

-65 to +200

°c

Rating
Collector-Emitter Voltage

Collector Current - Continuous

Operating and Storage Junction

TJ, T.tg

STYLE I:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

Temperature Range

THERMAL CHARACTERISTICS

I

Characteristic
Thermal Resistance, Junction to Case

Symbol

I

I

Max

I

8JC

I

2.91

Unit

°C/W

*Indlcates JEOEC Regiltefed Data.

10·32 UNF·2A
COATEO

60

.........

@ 60
~
~

~

30

=

20

!J!
is

~

~

~

'"

........... .........
......

""............ r-....

10
0

0

20

8
C

I'.....

4ll

4ll

60

80

100'

120

1411

MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.77 11.10 0.424 0.437
8.13 11.89 0.320 0.468
E
2.29 3.81 0.090 0.150
G
4.70 5.46 0.185 0.215
H
1.98
0.078
J
10.16 11.56 0.400 0.455
K 14.48 19.38 0.570 0.763
2.79 0.090 0.110
L
2.29
N
6.35
0.250
P
4.14 4.80 0.163 . 0.189
n 1.02 1.65 0.040 0.065
R
8.08 9.65 0.318 0.380
4.212 4.310 0.1658 0.1697
S
9.65 11.10 0.380 0.437
T
All JEDEC dimenSIOns and notes apply
Collector isolated from case.

DIM

FIGURE 1 - POWER·TEMPERATURE DERATING CURVE

......

160

TC. CASE TEMPERATURE (DCI

~

160

200

CASE 160-03

Sate Area Curves are IncifCIted by Figure 5. All limits . . applicable and must be observed.

TO-59

1·166

2N5346 thru 2N5349

*ELECTRICAL CHARACTERISTICS (TC· 2SoC, unless otherwise noted)

I

I

Min

Max

80
100

-

-

100
100

2N5346,2NS347
2N5348,2NS349

-

-

10
10

2NS346,2N5347

-

1.0

-

1.0

-

10

-

100

30
60
30
60
20
40

-

Characteristic

Fig. No.

Symbol

-

VCEO(sus)

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC· SO mAde, IS • 0)

-

Collector Cutoff Current
(VCE· 7S Vde, IS· 0)
(VCE • 90 Vde, IS· 0)

I'Ade

ICEO

2NS346,2NS347
2NS348,2N5349
12

Collector Cutoff Current

(VCE· 75 Vde,
(VCE· 90 Vde,
(VCE· 75 Vde,
TC·1S00C)
(VCE· 90 Vde,
TC·1S0oC)

Vde

2NS346,2NS347
2NS348,2N5349

VES(off) • 1.S Vdc)
VE8(off) • 1.S Vde)
VEB(off) • I.S Vde,

I'Ade

ICEX

mAde

VEB(oll) • 1.5 Vde,
2NS348,2NS349

-

Collector Cutoff Current
(VC8 • Rated VCS, IE • 0)
Emitter Cutoff Current
(VES· 6.0 Vde,IC· 0)

I'Ade

IC80

I'Ade

lEBO

ON CHARACTERISTICS (1)
DC Current Gain
(lC· SOO mAde, VCE • 2.0 Vde)

8

-

hFE

2NS346,2N5348
2N5347,2NS349
2N5346, 2NS348
2NS34 7, 2NS349
2NS346,2N5348
2N5347,2NS349

(lC· 2.0 Ade, VCE • 2.0 Vde)
(lC· 5.0 Ade, VCE • 2.0 Vde)
Collector-Emitter Saturation Voltage
(lC • 2.0 Ade, 18 • 0.2 Ade)
(lC· 7.0 Ade, IB • 0.7 Ade)

9,11,13

120
240

Vde

VCE(s.t)

-

0.7
1.2

11,13

Base-Emitter Saturation Voltage
(lC· 2.0 Ade, lB· 0.2 Ade)
(lC· 7.0 Ade, IS • 0.7 Ade)

Vde

VSE(sati

-

-

1.2
2.0

30

-

-

2S0

-

1,000

-

100
100

ns
ns

2.0
200

I'S
ns

DYNAMIC CHARACTERISTICS
-

Current-Gain-Bandwidth Product

(lC· SOOmAde, VCE ·10 Vde, I ·10 MHz)
Output Capacitance
(VCS· 10 Vde,IE· 0, 1·100 kHz)
Input Capacitance
(VSE • 2.0 Vde, IC • 0, I • 100 kHz)

MHz

IT

7

pF

Cob

7

pF

Cib

SWITCHING CHARACTERISTICS
Delay Time

Storage Time

(VCC 40 Vdc, VES(off)· 3.0 Vde,
(lC· 2.0 Ade; lSI· 200 mAde)
(VCC ·40 Vdc, IC· 2.0 Ade,

Fall Time

lSI· IS2· 200 mAde)

Rise Time

2,3

'r
2,6

* Indicates JEOEC Registered Data. (1) Pulse Test: Pulse Width

~

Vee
+40

's
tl

300 #5, Duty Cycle

5.0

v

20

'"i=

~10

ns

t\~vee

........

tr@VCC=20V

0.05

D,C,;; 1.(Y'b

Ielis = 10
TJ = 250 C

0.5
0.2

.........

.....

O. 1
lN914

ISO IV

td@VEB(oH) - 6.0 V

I.....

1.0

:gw
Ir. If

2.0%.

10

2.0
62

1'::1

-

FIGURE 3 - TURN·ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
·11.6 V

td

F=

td @VEB(oH) = 4.0 V

0.02
0.0 1
0.D1

·2.3 V

0.02

0.05

0.1

0.2

0.5

1.0

Ie, COLLECTOR CURRENT (AMPS)

1-167

2.0

5.0

10

2N5346 thru 2N5349

FIGURE 4 - THERMAL RESPONSE
I.0

~

§

o.~f-D=0.5
O.

O.
3f-D.2
>2:
t;~ O.2

I-W
W..,

~D.I

fflJ1

~~ o. I~D.D5
~~o.o7f-D.02

~~

~~ 0.05

~I-O.03

o

~ 0.0

"

2~

0.0 I
0.01

12

I>C
r-P'q.D1
SINGLE PULSE

I

0.02 0.03

SINGLE
PULSE

8Jc(ll- rltl 8JC
8JC = 2.91°CNI Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATII
TJ(pkl- TC = P(pkI8JC(tI

OUTY CYCLE. O' 11112

0.05

0.1

0.2

0.3

0.5

1.0

II

2.0

3.0
5.0
t. TIME (m.1

10

I

I I I III

20

30

50

100

I

I

I

200 300

500

1000

FIGURE 5 - ACTIVE'REGION SAFE OPERATING AREA

There are two limitations on the power han·
dling ability of a transistor: junction temperature and secondary breakdown. Safe operating
area curves indicate Ie - VeE limits of the
transistor that must be observed for reliable

operation; i.e., the transistor must not be

su~

jeeted to greater dissipation than the curves

indicate.
The data of Figure 5 is basad or, T J(pkl =
200°C; TC is variable depending on conditions.
Pulse curves are valid for duty cycles of 10%
provided TJ(pkl,,200oC. TJ(pkl may be calculated from the data in Figure 4. At high case

temperatures, thermal limitations will reduce
the power that dan be handled to values >'Iess
than the limitations imposed by secondarybreakdown.

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 6 - TURN-OFF TIME

FIGURE 7 - CAPACITANCE

I.

1w
~.:

1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.D5
0.03
0.D2

.ersus VOLTAGE

1000

7.0
5.0
3.0
2.0

- I,

IBI = IB2
IcllB -10
Tr250 C.

700
oS

It@VCC-80V

~

300

~

200

~

r-- r- If@VCC-20V

-

TJozsl>C
Cib

.. ,

.;

"r-.

.........

1110

r--~

0

D.OI
0.01

I--a

... 5110

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

5C!1.0

10

Cob
2.0

3.0

5.0 7.0

10

20

30

VR. REVERSE VOLTAGE (VOLTS'

IC. COLLECTOR CURRENT (AMPSI

1-168

50 70 1110

2N5346 thru 2N5349

FIGURE 8 - DC CURRENT GAIN

FIGURE 9 - COLLECTOR SATURATION REGION

1000
700
500
z

VCE - 2.0 V
VCE-IOV

-

300

~ 200

....

~ 100

"'-

-

25 0 C

70
50

"-

-550 C

g

...

-

TJ -l75 oC

1i':

a

2.0

U)

o~ 1.8

Illl

~
w

1.6

1111

~

1.4

co

~

1.0

1ici;l

0.8

~

0.6

8

0.4

~

o. 2

>

10

0.1

0.2 0.3 0.5

0

2.0 3.0 5.0 7.0

1.0

0.5

III

1.0A

3.0A
TJ=250 C -

1.0

2.0 3.0

5.0

0.9

VCE z 3OV-

0.8 -

IC = 10 X ICES
_

0.7

~

0.6

o

~

~ o. 5 -

F=IC-2XICES

_

"'-

20 30

Li

40

60

80

.......

r-..

~

TJ' 25 0 C

0.2

120

140

160

180

200

0.01

0.020.030.05

0.1

TJ,JUNCTION TEMPERATURE lOCI

i-'

....

VCElsati @IC/18 = 10
0.2 0.3 0.5

1.0

2.0 3.0 5.0

10

IC, COLLECTOR CURRENT IAMPSI .

FIGURE 12 - COLLECTOR CUT·OFF REGION

FIGURE 13 - TEMPERATURE COEFFICIENTS

10-3

>5.0
G

VCE 30 V f--TJ= 175°C 11

-

1000 C

~_REV~RSE

:::t

-0,4

~

I 1111111

Hi} ,J.

-

IC" ICE

0

~

I

ICIIB =
1I.
I
TJ = -550 Cto +1750 C

~ +2.0
U
~ +1.0

,IBVc 10; V~E(

~ -1.0

i

...
...8

7

250 C

!'".... :.~. r-

'1(1-

1

I

iu

t

II

)

I

~"8 10: V~~(~)

i-"

S
-2.0
~
!....

FORWARD

i

1_
U

M

~

1.0

VBE, BASE·EMITTER VOLTAGE (VOLTSI

-3.0
-4.0
-5.0
0.01

0.020.030.05

0.1

0,2 0.3 0.5

1.0

IC. COLLECTOR CURRENT (AMPS)

1-169

!I
i:

I

.u.t+±ttt:::
JB~ ~ vlc~ ~IJ.~ V

0.4

O. 1 -

100

200 300 500

o

(TvpicallCES Values
Obtained From Fig. 12)

20

100

111111

V~~(~t) ~ "I I/~ 1:1'0
II I II Ii II

o
o

50

II

> 0.3

102

10-9

.......

FIGURE 11 - "ON" VOLTAGES
1.0

108

f--

10

!

18, BASE CURRENT (mA)

FIGURE 10 - EFFECTS OF BASE EMITTER
RESISTANCE

1==

-

......

IC, COLLECTOR CURRENT IAMPSI

IC = ICES

~

III

1111

~ 1.2

0
0.02 0.03 0.05

IIII

I

Ic=100mA

o

0

0.0070.01

I

2.0 3.0 6.0

10

2N5427
thru
2N5430

®

MOTOROLA

lIB
7 AMPERE

MEDIUM-POWER NPN SILICON TRANSISTORS

POWER TRANSISTORS
NPN SILICON
· .. designed for switching and wide-band amplifier applications.
•

Low Collector-Emitter Saturation Voltage 'VCE(sat) =1.2 Vdc (Max) @ IC =7.0 Adc

•

DC Current Gain Specified to 7 Amperes

•

Excellent Safe Operating Area

•

Packaged in the Compact TO-66 Case

BO-100 VOLTS
40 WATTS

*MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage
Collector-Sase Vol_
Emitter-Sase Voltaga

VCEO
VCS
VES
IC
IS

Collector Current - Continuous

Base Current

Total Device DisSipation
Derate above 250 C

@

"'N ....,."
2N5430

80
80

100
100

228

-65 to +200

°c

6.0
7.0
1.0
40

TJ. Totg

Temperature Range
THERMAL CHARACTERISTICS
Charactaristic

Symbol

Thermal Resistance, Junction to Case

8JC

Unit

Vdc
Vdc
Vdc
Adc
Adc
Watts
mWfOC

Po

TC = 25D C

Operating and Storage Junction

it

2N5427
2N5428

1=:=

4------t I
P

E

SEATING PLANE

I

Unit
10C/W

Max

I

4.37

---F--

Indicates JEDEC Registered Data

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE

STYLE 1:
S
PIN 1. BASE
2. EMITTER

.........

I'-......
...... 1'-......
...... 1'-......

0

i'.....

0

r-.....

0

20

40

MILLIMETERS
MAX
12.70
.35 8.64
0.71 0.86
D
E
1.27 1.91
F 24.33 4.43
G
4.83 5.33
H 2.41
2.67
J 14.48 14.99
K
9.14
1.27
3.
0 3.61
S
8.89
3.68
T
15.7

DIM MIN
B 11.94

..........

60

80

100

120

140

t---.....
180

["'......
180

TC. CASE TEMPERATURE (GCI

200

.142

All JEDEC DimonoioM and and Nota Apply.
CASE 80-02
T0-66

1-170

2N5427 thru 2N5430

*ELECTRICAL CHARACTERISTICS fTc

I

= 25°C, unless otherwise noted)

I

Min

Max

80
100

-

-

100
100

2N5427, 2N5428
2N5429.2N5430

-

10
10

2N5427,2N5428

-

1.0

-

1.0

-

10

-

100

30
60
30
60
20
40

-

Characteristic

Fig. No.

Symbol

-

BVCEO(sus)*

Unit

OFf CHARACTERISTICS
Collector·Emitter Susteining Voltage (1)
(lC = 50 mAde, IB = 0)

-

Collector Cutoff Current

(VCE
(VCE

= 75 Vde, IB = 0)
=90 Vd., IB =0)

12

= 75 Vd., VEB(off) = 1.5 Vd.)
= 90 Vd., VES(olf) = 1.5 Vd.)
= 75 Vd., VES(olf) = 1.5 Vde,
= 150°C)
=90 Vde, VEB(off) = 1.5 Vde,
= 150°C)

-

=6.0 Vde,

IC

-

=0)

mAde

/tAde

IC80

= Rated VCB, IE = 0)

Emitter Cutoff Current

(VSE

/tAde

ICE X

2N5429,2N5430

Collector Cutoff Current

(VCB

/tAde

ICEO

2N5427, 2N5428
2N5429.2N5430

Collector Cutoff Current

(VCE
(VCE
(VCE
TC
(VCE
TC

Vde

2N5427, 2N5428
2N5429,2N5430

/tAde

lEBO

ON CHARACTERISTICS (1)
DC Current Gain

8

(lC

= 500 mAde, VCE = 2.0 Vde)

(lC

= 2.0 Ade, VCE = 2.0 Vde)

(lc

= 5.0 Ade, VCE = 2.0 Vde)

Collector-Emitter Saturation Voltage

(lc
(lc

9,11,13

120
240

Vde

VCE(satl*

= 2.0 Ade, IB =0.2 Ade)
= 7.0 Ade, IB =0.7 Ade)

-

11,13

Base-Emitter Saturation Voltage

(lC
(lC

-

hFE*

2N5427,2N5429
2N5428. 2N5430
2N5427. 2N5429
2N5428, 2N5430
2N5427,2N5429
2N5428, 2N5430

0.7
1.2
Vde

VBE(satl*

= 2.0 Ade, IB =0.2 Ade)
= 7.0Ade,IB =0.7 Ade)

-

-

1.2
2.0

30

-

-

250

-

1.000

-

100

DYNAMIC CHARACTERISTICS

-

Current-Gain-Bandwidth Product

(lC

= 500 mAde, VCE = 10 Vde, I = 10 MHz)

Output Capacitance
(VCB = 10 Vde,IE

7

(VSE

7

= 2.0 Vde,

IC

pF

Cob

= 0, f = 100 kHz)

Input Capacitance

MHz

IT

pF

Cib

= 0, f = 100 kHz)

SWITCHING CHARACTERISTICS
Delay Time
Rise Time

Storage Time
Fall Time

= 40 Vdc, VEB(off) =3.0 Vde,
=2.0 Ade, lSI = 200 mAde)
(VCC =40 Vde, IC = 2.0 Ade,
lSI = IB2 = 200 mAde)
(VCC

2,3

td

(lC

tr
2,6

ts
tf

ns

100

ns

2.0

ItS

200

ns

* Indicates JEDEC RegIStered Data. (1 )Pulse Test: Pulse Width'" 300 Its. Duty Cycle" 2.0%.
FIGURE 3 - TURN-ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

11----1
L
l-10I'S~

·11.6V

+40 V

+37V

5.0
2.0

62

OV

20

""-

1.0

INPUT PULSE
tr. tf ::;10 ns

10

Vee

1

0.5

'";::

0.2

"

tl@veeiBOIV

"'iii

.....

td @VEBloHl= 6.0 V

tr@VCe=20V
0.1

lN914

D.C. =1.0%

0.05

0.01
0.01

1-171

"'"

""'"

td@ VE8(oII) - 4.0 V

0.02

·3.3 V

le/18" 10
TJ = 25 0 C

0.02

0.05

1.0
2.0
0.5
0.1
0.2
IC, COLLECTOR CURRENT (AMPS)

5.0

10

2N5427 thru 2N5430

FIGURE 4 - THERMAL RESPONSE

III]

1.0
O. 7
o.5

0-0.5

1.&.1

O.3

0.2

cC

O. 2

0.1

~

in

z

<

...ccwz.,
>

~~

~ffl
1.1.

a:

w~

' 0 c{
W,",

~

ffi

<"
~
c

I-

D. 1
0.07
0.05

0.03
0.02

Z

-E

I--"

PULSE

.02
0.01

0.02 0.03

._-

I I

0.05 0.07 0.1

0.2

0.3

0.5 0.7

1

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT'1

k)

I 1IIIIt1

l.n

2.0
I.

1'l

~ 4'~1'N

-=

TJ(Pk) - TC - P(pk) OJC(t)

'2
DUTY CYCLE. O' tt/'2

SINGLE PULSE

II

0.0 1
0.01

-

""",-r&
t

~

0.05

-

OJC(') - ,(t) OJ~:~

3.0

5.0 7.0 10

TIME DR PULSE WIDTH

20

30

II
50

I I I I I II

70 100

200 300

500 700 1000

(m.}

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
0

le

5.0

~

2.a

~

a

There are two limitations on the power ha"",

t--"'

dlingabilityof a transistor: junction temperature
and secondary breakdown. Safe operating area
curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation;
i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.

I-100#.

.....

5.0 ms

~

1.
5 f- TJ - 200°C
O.

~

O. 2

8

0.0 5

~

~~

Secondary Breakdown limited

_ .. - - -Bon~ing Wire Limited

_ ..... - - Tllermal Limitations

.....
I-- P'-

Te '" 250 C

loOms

'Pulse Outy Cycles 10%

o. 1

The data of Figure 5 is based on TJ(pk) =

It-F"

200°C; T C is variable depending on conditions.
Pulse curves are valid for duty cycles of 10% pro-

dC~

Applicable For Rated BVCEO

~

videdTJ(pk) S200"C. TJ(pk) mavbecalcutated

from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than
the limitations imposed by secondary break~
down.

2N5427.28
2N5429.30

0.02
0.0 1
1.0

2.0

3.0

5.0 7.0

10

20

30

50

70 100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS}

FIGURE 6 - TURN-OFF TIME

a
a
a
2.a

1
7.
5.0
3.

t-

1.0
7

! ~:s
~

i=

'f@VCC'80V

O.3
O.2 _
'0. 1

-

Is

FIGURE 7 - CAPACITANCE versus VOLTAGE
1000

181- IS2
Ic/lS 10
TJ-250C

700

w

., 30

TJ = 250~Cib

0 __

~

<:;

< 200

-tf@VCC-20V

5u

I'.

0.07
0.05
0.03

r- I"-

100

0.02
0.0 1
0.01

t-

~ 500
oS

0
0.02

O,OS

0.1'

02

0.5

1.0,

2.0

5.0

10

IC. COLLECTOR CURRENT (AMPS)

50
1,0

Cob
2.0

3.0

5.0 7.0

10

20

30

VR. REVERSE VOLTAGE (VOLTS)

1-172

50 70 100

2N5427 thru 2N5430

FIGURE 8 - DC CURRENT GA!N
1000
700
500

--

<
'"

I-

~
a
u

c

~

-

TJ = 175°C

200

..

--

-

3{)0
z

FIGURE 9 - COLLECTOR SATURATION REGION
;;; 2.0

100

'~
-

25°C

70
50

fC-

-55°C

!::;

VCE 2.0 V
-VCE=IOV

...a'"

''""
al

0.8

'"

0.6

t:l
>

J
1.0

III
III

1.0A

3.0A
TJ = 25°C

'"

20
0.2 0.3 0.5

IC" 100mA

IIII
IIII

I-

~
8

0.1

fl.I~ -

I
I

'"

~~

'"

0.020.03 0.05

1.6

[]I

!::; 1.4
> 1.2
~ 1.0

30

10
0.0070.01

1.8

2.0 3.0 5.07.0

0.4

"

.....

0.2
0
0.5

1.0

2.0 3.0

5.0

10

FIGURE 10 - EFFECTS OF BASE-EMITTER
RESISTANCE

.......

,-"""

r-..

,./
IC = ICES

r-----

(Typical ICES Values -

F==

~
o
a

-:"t- -- ---

::--",.,

-

---.

-k .....
.....

1-'

0.7

o. 5 -

'"
~

0,4

:>

'"

0.3

1 J.l.++±tt
JB~ ~ vIC~ ~12~~ V
TJ = 26°C

O. 2

.Obtained From Fig, 12)

O. 1 -

o
20

40

60

BO

100

120

140

160

180

200

0.01

0.02

0.05

+5.0
u

!'" :.:. -

Vce=30V t--

I-

~ 10-5

f5

t-TJ = 175°C

j
8

10-1

!}

10-8

+2.0

I II IIII
~II

10-9
-0.4

25°C
~

...
g; -1.0
S
-2.0
~

L

REVERSE

0

IC- ICE

ill

FORWARO

U

10

~

I
V

Wa

f

V

fo~ vii~, J

,;

-3.0

l-

i
~

2.0 3.0 5.0

1vi
I ~C 0; F~{r'

8

-

1.0

Ul..1. I

~ +1.0

:>

100°C

0.5

lelia = 10:
TJ' -550C 10 +1750C
•
III
I

U

~ 10-6
'"t;

0.2

FIGURE 13 - TEMPERATURE COEFFICIENTS

FIGURE 12 - COLLECTOR CUT-OFF REGION

10-4

0.1

IC. COLLECTOR CURRENT {AMPSI

10-3

I-

",

IC
VCE(sall@iB=10

TJ.JUNCTION TEMPERATURE (OCI

ie
~

~

Iil I II Ii II
!

0.6

~

102

o

V~i( I I~ III/~ I ~1'0

0.8 -

- - -IC - 10 X ICES

""'"

200 300 500

I II IIII

0.9

VCE-30V-

C::::=: IC - 2 X ICES

100

FIGURE 11-"ON"VOLTAGES
1.0

- --

Lr-...

50

lB. BASE CURRENT (mAl

IC. COLLECTOR CURRENT (AMPSI

108

20 30

M

1.0

VBE. BASE·EMITTER VOLTAGE (VOLTSI

-4.0
-5.0
0.01

0.020.030.05

Q.l

0.2 0.3 0.5

1.0

IC, COLLECTOR CURRENT (AMPS)

1-173

2.0 3.0 5.0

10

2N5629,2N5630,2N5631
2N6029,2N6030,2N6031

-

NPN

®

PNP

MOTOROLA

HIGH-VOLTAGE - HIGH POWER TRANSISTORS
16 AMPERE
. designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.

•

POWER TRANSISTORS
COMPLEMENTARY SILICON

High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc - 2N5629, 2N6029
= 120 Vdc - 2N5630, 2N6030
= 140 Vdc - 2N5631, 2N6031

•

High DC Current Gain - @ IC = B.O Adc
hFE = 25 (Min) - 2N5629, 2N6029
= 20 (Min) - 2N5630, 2N6030
= 15 (Min) - 2N5631, 2N6031

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

100-120-140 VOLTS
200 WATTS

·MAXIMUM RATINGS
Svmbol

Rating
Collector-Emitter Voltage
Emitter-Base Voltage

-16-

Adc

IB

-20-5.0-

Adc

PD

-200~

Peak

Base Current -- Continuous

Total Device DisSipation
Derate above 25°C

@

TC

=

25°C

100

Unit

Vdc

VEB
IC

Collector Current - Continuous

2N5631
2N6031

120
140
120
140
100
-7.0_

VCEO
VCB

Collector-Base Voltage

2N5629 2N5630
2N6029 2N6030

Vdc
Vdc

_1.14_

Operating and Storage Junction
Temperature Range

-65 to +200

TJ.T stg

lr~
t~.
ES:?-t;:
PLANE

I

·THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Case
Indicates JEDEC Registered Data

FIGURE 1 - POWER DERATING
200

fi>-

~

.......
150

"- .....",

z

0

~

!jj

STYLE I:
PIN 1. BASE
2. EM lITER
CASE: COLLECTOR

.......

DIM

r.......

~

~

0

I'-.

3!
~

A
B
C

"-

100

C

50

o

o

20

40

60
TC.

80

100

120

140

-

-

6.35
0.99

'"

160

f""-..

180 200

All Limits are appll~able and must be observed.

1-174

39.37
21.08
7.62
1.09
3.43

INCHES
MIN
MAX

0.250
0.039

-

E
29.90 30.40 1.177
11.18 0.420
G 10.67
H 5.33
5.59 0.210
J 16.64 17.15 0.655
K 11.18 12.19 0.440
Q
4.09 0.151
3.84
26.67
R
Cotlectorconnected to case.
CASE 11·01
(TO·3)

F

TEMPERATURE (OCI

Safe Area Curves are Indicated bV Figure 5

MILLIMETERS
MIN MAX

NOTE:
1. DIM "0" IS DIA.

-

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

2N5629, 2N5630, 2N5631 NPN
2N6029, 2N6030, 2N6031 PNP
*ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted I
Characteristic

Symbol

Min

Max

100
120
140

-

Unit

OFF CHARACTERISTICS
Collector-E mitter Sustaining Voltage (1)
(IC = 200 mAde. Ie = 0)

VCEOlsus)

2N5629.2N6029
2N5630.2N6030
2N5631.2N6031

Collector-Emitter Cutoff Current
(VCE = 50 Vde. Ie = a)
(VCE = 60 Vde. Ie = a)
(VCE = 70 Vde. Ie = a)

ICEO

2N5629. 2N6029
2N5630, 2N6030
2N 5631 , 2N6031

mAde

-

1.0
1.0
1.0

-

Coliector~Emitter Cutoff Current

mAde

ICEX

-

(VCE = Rated Vce, VEe (off) = 1.5 Vde)
(VCE = Rated Vce, VEe(aff) = 1.5 Vde, TC = 150a C)

Collector-Base Cutoff Current

Vde

Iceo

-

lEBO

1.0
5.0
1.0

mAde

-

10

mAde

25
20
15
4.0

100
80
60

-

1.0
2.0

(VCS = Rated Vce. IE = a)

Emitter-Base Cutoff Current
(VSE = 7.0 Vde, IC = a)
ON CHARACTERISTICS (1)
DC Current Gain
Ilc = 8.0 Ade, VCE

IIc

= 16 Ade. VCE

= 2.0 Vdc)

Collector-Emitter Saturation Voltage

VCElsat)

IIc = 10 Ade, IS = 1.0 Ade)
IIc = 16 Ade, 18 = 4.0 Ade)

All Types

Base-Emitter Saturation Voltage

VSElsat)

-

Base-E mitter On Voltage

= 8.0 Ade, VCE = 2.0 Vde)

VSE(an)

-

Vdc

1.8

Vde

-

1.5

Vdc

IT

1.0

-

MHz

Cob

-

500
1000

pF

hIe

15

-

-

IIc = 10 Ade, IS = 1.0 Ade)

IIc

-

hFE

2N5629,2N6029
2N5630, 2N6030
2N5631.2N6031
All Types

= 2.0 Vde)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
IIc = 1.0 Ade, VCE = 20 Vde, f test = 0.5 MHz)

Output Capacitance
(Vce

= 10 Vde.IE = O. f

2N5629, 30, 31
= 0.1 MHz)

2N6029. 30, 31

Small-Signal Current Gain
IIC = 4.0 Ade. VCE

= 10 Vde, f

= 1.0 kHz)

Indicates JEDEC Registered Data.
(1) Pulse Test' Pulse Width ~ 300 J.1.S, Duty Cycle ~ 2.0%.
(2) fT = Ihfej • f test

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - TURN·ON TIME

Vee

3.0

+30 V

2.0

I I

1.0
"

.0;

I,

0.5

tr,tf:::o:10ns
DUTY CYCLE" 1.0%

........ !';;;:

50.2

01

O. 1
-4V

RBaod RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.03
0.2

For PNP test circuit, reverse all polarities and 01.

1-175

,....

-

-to""

Id @"VBE(O/fj;o V

0.07
0.0
51=

2N5629,30,31
2N6029, 30, 31

I-

01 MUST BE FAST RECOVERY TYPE. eg
MBD5300 USED ABOVE 'B ~100 rnA
MS06100 USED BEL~W 'B ~100 rnA

,.... -

L--

~ 0.3

51

L.

0.7

SCOPE

RB

I

Tp 25°C
ICIIB=lOl
VCE 30 V

0.3

0.5

0.7,1.0
2.0
3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)

10

20

2N5629,2N5630,2N5631 NPN
2N6029,2N6030,2N6031 PNP

fiGURE 4 - THERMAL RESPONSE
0

-

5

f- D 0.5

IJJC1tJ

=

2

-

~

~F
5

2

P~

0.02

,

11-+---1

......

11'lirl(
1 GLEIPUiSE

V

IIIIII

II

0.1

0.05

SINGLE
PULSE

f-----t2-~

III

0.0 1
0.02

-

-IJlfL

I- ~ E:;I::'

0.05

0.2

1.0

0.5

'_

PULSE TRAIN SHOWN
ff- f-REAOTIMEATq
~ f-TJI'kl Te = Plpkj IjJC1tj- ~

DUTY CYCLE, 0 =q!t2

__ 0.1

1

rltl IjJC

o CURVES APPLY FOR POWE~_

I-:::: IiiII

0.2

=

~JC'08750CWM" I~

2.0

5.0

10

20

100

50

200

500

1000

2000

I, TIME (m.)

fiGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
20

I
ffi

~

B

10

- - -

l
,I

'\J
5.0ms

1~
O.5ms

~o

I II

7.0
5.0

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor

TJ' 200·C

must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for dutv cVcles to 10% provided TJ(pk}';;; 200o C. TJ(pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

3.0 I---'--SECONO BREAKDOWN L1MITE~'l ~
2. 01-- ---BONDING WIRE LIMITED

r

I - - - - -THERMALLY L1MITEO@Tr 2 C
o
1 i
"
~ 1. 0I==FCURVESAPPLY BELOW
o. 71==~ RATEO VCEO

...'"

I I I I III

=

S
E

There are two limitations on the power handling ability of a

P'

d.

0.5
0.3
O. 2
2.0

2N5629,2N6029
2N5630,2N6030
2N5631,2N6031

I1III
3.0

5.0 7.0 10
20
30
50 70 100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

200

NPN

PNP

I

2N5629. 2N5630. 2N5631

2N6029. 2N6030. 2N6031

fiGURE 6 - TURN-Off TIME
'0t--

3.0

TJ' 25°C
ICIIB'IO IB1' IB2
VCE,30V-

I
"" Is

I'-...

.0

.0

.0

I
T"

.....

.7

o.5
0.2

0.3

If

"-

+--

3. 0

+-

2.0

~
i=

V

~f--

O.6

I"

TJ'250C_
IBI'IB2
Ic/IB'1O V E'30V-

1'1\

1.0

'\.

'"

O. 4

I--

III.L

-..,

O. 3

I"'-r-.

If

"

V

O.2
0.5

0.7 1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (AMP)

7.0

10

0.2

20

1-176

0.3

0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)

10

20

2N5629, 2N5630, 2N5631 NPN
2N6029, 2N6030, 2N6031 PNP

NPN

PNP

I

2N5629, 2N5630, 2N5631

2N6029, 2N6030, 2N6031

III

FIGURE 7 - CAPACITANCE

1000
70

2000~rrrnr----'--'-TTTTITr--'-r-r""""III"""""'IIII---'

o-

r-

+J 1.'}5h~

TJ =.25 0 C

r-.....

~;0 100°E=E~tU~s§~E~Wtt==EE~ml3
t---Hi-+I++~-+~""''od-I-+1+1+--+-++H1+H---l

I"'-..: ~b
1',

700

u

'"~

r-....

Cob

500 1--+-l-Hft+H--+-+-l~~~-+-+-1+I+l-H-----j

~ib,
II

u'

.......

300

0.2

10 20

100

05

2.0
5.0
VR. REVERSE VOLTAGE IVOL TSI

1.0

i'.

Cob

2000·'::.2-..J.-'-:0':'.5u.J.'":.0"--:2:':.0-..J.~5'=".Oul""""0-_2:l.0-..J...J1-:5r~0U>l.l:!1O"'0""""'200

100 200

50

"

1-1-+++++1+--+-++++1t+tt1-+-~1-J-H+H-l--1
VR •. REVERSE VOLTAGE IVOLTSI

FIGURE 8 - DC CURRENT GAIN

500 f--

500
TJ'" 150 0C

Or-- r-: ...±:I10 0

'--

30

f-o .-

~

1=

VCE· 2 0 V
- - - - VCE • 10 V

"-

30

200

f-

t-.;t:--

f-- f - -55°C

.....

0
7.0

2.0

50

0.7 10
30
IC. COLLECTOR CURRENT IAMPI

10

.....

~

0

10

05

~ ~....

0

70
50

0.3

-

E~~

OF-550C
0
0

~

02

VCE· 2.0 V- I- - VCE·1O V - ! -

oI--TJ=+150
_ 0C

~

'-.;

5.0

0.2

20

0.3

0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC. COLLECTOR CURRENT IAMPI

10

20

FIGURE 9 - COLLECTOR SATURATION REGION

~

0
2

~

~I 6

~
~

II
II

I II
I II

IICU~A

~ BU

~
o

o. B

~

04

0

III

0

~
w

'"

'"
c:o

1,16 A

>

~

1. 6

\
. k.o 1

Id .14.10'A

i"

,

I'-

r-...

0
0.05 0.07 O. I

al

"'

1\

~

t'l

>
0.2

0.3
0.5 0.7 I 0
'B. BASE CURRENT IAMPI

20

30

5.0

1-177

i-

B

1\

0

8

TJ=250C

1'6~

-1\
1. 2

lI-

\

\

1\

w

~

t'l

~

= 25°C

1. 2

~

>

TJ

I'\.

o.4

I'-0
0.05

om

0.1

0.2

0.3
0.5 0.7 1.0
'B. BASE CURRENT lAMP)

2.0

3.0

5.0

2N5632,2N5633,2N5&34
2N6229,2N6230,2N6231

NPN

®

PNP

MOTOROLA

III]
10 AMPERE

HIGH VOL TAGE-HIGH-POWER
SI LICON TRANSISTORS

COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. designed for use in high power audio amplifier applications and
high-voltage switching regulator circuits.
•

High Collector·Emitter Sustaining
VCEO(susl = 100 Vdc (MinI ,
= 120 Vdc (MinI = 140 Vdc (MinI -

Voltage 2N5632. 2N6229
2N5633. 2N6230
2N5634. 2N6231

•

High DC Current Gain @ IC = 5.0 Adc hFE =25 (MinI - 2N5632. 2N6229
= 20 (MinI - 2N5633. 2N6230
= 15 (MinI - 2N5634.2N6231

•

Low Collector·Emitter Saturation Voltage VCE(satl = 1.0 Vdc (MaxI @ IC = 7.5 Adc

100-120-140 VOLTS
150 WATTS

*MAXIMUM RATINGS
VeEO

2N5632
2N6229
100

Coliactor·Base Voltage

VCB

100

Emitter·Base Voltoge

VEB

Rating

Svmbol

Coliactor·Emitter Voltage

Collector Current - Continuous

IC

Peak
ease Current

Continuous

IB

Totol Device Dissipation '@Te
Oorote ebove 25°C

= 25°C

Po

Operating and Storage Junction

TJ.Tstg

--

2N5633 2N5634
2N6230 2N6231
140
120
120
7.0
10
15

140

Vdc
Vdc
Vdc

-

---

Adc

5.0

Adc

150
0.B57
-65 to +200

wloe

--_

Unit

STYLE 1:
PIN 1. BASE
2.EMITIER
CASE: COLLECTOR
NOTE:
1. DIM "0" IS DIA.

Watts
°e

Temperature Range

*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
·1 "dlc.tes JE DEC Registered Data.

FIGURE 1 - POWER DERATING
160

~

........

0

MILLIME ERS
DIM MIN MAX

.........

0

.........
0

A

" ""'"

0
0
0
25

50

75

100

125

TC. CASE TEMPERATURE CDCI

B

C
D
E

""

150

F

~
175

20

Safe .r.,. limits .r. Indicated by F Igur. 5.
Both limits ar. applicable and must be obl8l'Yed.

6.35
0.99

-

29.90
G 10.67
5.33
J 16.
K 11.18
3.B4

38.37
21.08
7. 2
1.09
3.43
30.40
11.1

INCHES
MIN MAX

0.038

-

1.177
0.420
0. 10
0.855
0.440
0.151

0.043
0.135
1.197
~

lIMO
7.16
0.675
12.19
0.480
4.09
0.161
28.67
R
1.050
Collector connected to c...

-

CASE 11'()!
TO·3

1-178

1.550
0.830
_O~

2N5632,2N5633,2N5634 NPN
2N6229,2N6230,2N6231 PNP
-ELECTRICAL CHARACTERISTICS (Te = 25°C unless otherwise noted)
Symbol

Min

Max

100
120
140

-

Unit

OFF CHARACTERISTICS
Coliector~Emitter

Sustaining Voltage

Collector~Emitt.r

Vde

VCEO(susl

2N5632, 2N6229
2N5633,2N6230
2N5634,2N6231

(lC = 200 mAde, IB = 01

Cutoff Currant

ICEO

(VCE = 50 Vdc, IB = 01
(VCE = 60 Vdc, IB = 01
(VCE = 70 Vdc, IB =01

-

2N5632, 2N6229
2N5633, 2N6230
2N5634,2N6231

Collector-Emitter Cutoff Current
(VCE = Rated VCB, VEB(off! = 1.5 Vdel
(VCE = Rated VCB, VEB(off! = 1.5 Vde, TC

-

mAde
1.0
1.0
1.0
mAde

ICEX

-

= 150DcI

Collector Base Cutoff Current
(VCB = Rated VCB, IE = 01

ICBO

-

Emitter-Base Cutoff Current

lEBO

(VBE = 7.0 Vdc, IC

-

1.0
5.0
1.0

mAde

-

1.0

mAde

25
20
15
5.0

100
SO
60

-

1.0
2.0

VBE(satl

-

2.0

Vdc

VSE(onl

-

1.5

Vdc

fy

1.0

-

MHz

Cob

-

300
600

pF

hfe

15

-

-

= 01

ON CHARACTERISTICS

DC Current Gain
(lC

= 5.0 Ade, VCE = 2.0 Vdel

(lC

= 10 Ade, VCE = 2.0 Vdel

Collector-Emitter Saturation Voltage
(lC
(lC

Vde

VCE(..tl

=7.5 Ade. IB = 0.75 Adel
= 10 Ade, IB = 2.0 Adel

Base-Emitter Saturation Voltage
(lC

-

hFE
2N5632, 2N6229
2N5633, 2N6230
2N5634, 2N6231
All Types
I

=7.5 Ade, IB =0.75 Adel

Base-Emitter On Voltage
(lc = 5.0 Ade, VCE = 2.0 Vdel
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
(lC = 1.0 Ade, VCE = 20 Vde, f. es• = 0.5 MHzl

Output Capacitance
(VCB

= 10 Vdc,lE = 0, f =0.1

Small Signal Current Gain
(VCE = 10 Vdc,lC = 2.0 Ade, f

2N5632, 2N5633, 2N5634
2N6229, 2N6230, 21'j6231

MHzl

= 1.0 kHzl

-Indicates JEOEC Registered Data.
(1) Put. Test: Pul .. Wldth:S: 300 "', Duty CycleS 2.0%.
(2) fy = I hlel • f. es•

FIGURE 2 - SWITCHING TIME TEST
CIRCUIT
VCC
+30 V

H

RC

+10V~
0-

SCOPE

RS

----

-10V---_

t r .tt:5.10 ni
CYCLE = 1.0%

~UTY

-4.0 V

RS and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, 09:
MBD5300 USED ABOVE IB =100 rnA
MS06100 USED BELOW IB =100 rnA

For PNP test. reverse all polarltie. end 01.

1-179

2N5632,2N5633,2N5634 NPN
2N6229,2N6230,2N6231 PNP
NPN
2N5632.2N5633.2N5634

PNP
2N6229. 2N6230. 2N6231

I
FIGURE 3 - TURN·ON TIME

2.a

1.0

TJ=25OC_VCE=]OV
IC/IB = 10
VBE(off) ~·5.0 v

1.0

0.5

tr

tr

O.5

.........

......

:----.. .......

2

TJ =25 OC
VCC = 30 V
ICIIB = 10

td

1

VBE(off)~

o. 1

5.0 V

0.05

td

0.05

0.02

0.02
0.1

a.]

0.2

0.5

1.0

2.0

3.0

5.0

0.01
0.1

10

0.2

0.3

IC. COLLECTOR CURRENT (AMPt

0.5

1.0

2.0.

3.0

5.0

10

IC. COLLECTOR CURRE'NT (AMP)

FIGURE 4 - THERMAL RESPONSE
1.0

O. 7 f=:D - 0.5.

ffi o.5

N

!2~ o. 3r--0.~

~

W,"

;;;'"
zo 0.2
~~
.... w

~ ;::;:

0.1

~~

O. 1~0.05
t; t)'O.O 7~0.~
~~ 0.05

~'"
w~

-

0,01
0.01

;::::;...

SINGLE
PULSE

1

0.01

:g ~ 0.03 V
ffi 0.02
"....

pHUl

""""

SINGLE PULSE

0.02 0.03

0.1

0.2

0.3.

0.5

1.0

2.0

I 1111111

3.0

5.0

10

I I

20

30

=

OJC= 1.17 0 CIWMAX t

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME Attl o! ,,In!},1
TJ(pki - TC' = P(pk) 9JC(t)

'DUTY CYCLE. D = 11/t2

I

II I

0.05

f--I

,I.I
50

100

200

300

500

1000

t. TIME (ms)

FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
20

~

0

....

1.0
5.0

~

3.01---

~

'"

5.0ms-+

5ns

I.Oms4

0.1 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.

de

Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.

- TJ = 200°C

2.0

- - - - BONDING WIRE LIMITED .'1.
- - - - THERMALLY LIMITED
tHC = 25°C
7 _ _ _ SECOND BREAKDOWN LIMITED

~ ~:D

\r\:

The data·of Figure 5 is based on TJ(pk) = 200; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(pk)~ 200"C. TJlpk) maybe
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

r\.

~ 0.5 '--CURVES APPL ~ BelOW RATED Vr.EO
LIMIT FOR 2N5632,2N62.29
2N5633.2N823O
2N5634,2N8231

O.3
O. 2
10

20

30

50

70

100

200

VCE. CDLLECTOR·EMITIER VOLTAGE (VOLTS)

1-180

2N5632,2N5633,2N5634 NPN
2N6229,2N6230,2N6231 PNP
NPN
2N5632.2N5633.2N5634

PNP
2N6229.2N6230.2N6231
FIGURE 6 - TURN·OFF TIME

0

TJ'250~f

5.0

r--....'. ......

2.0

TJ - 25°C

ICIIB -10
IBI IB2
VCC '3D V

~

5.0

...

r-......

>=

""'-....

"

>= 1.0

'I

w

VCC - 30 V
lells ~ 101
I IBI = IB2

~"

~ 2.0

.........
1.0

~

III

10

0.5

0.5

0.2

0.2

'f

O. 1
0.1

o. 1
0.2

0.3.

0.5

2.0

1.0

3.0

10

5.0

0.2

0.1

0.3

2.0

1.0

0.5

IC. COLLECTOR CURRENT (AMP)

3.0

10

5.0

IC, COLLECTOR CUR RENT (AMP)

FIGURE 7 - CAPACITANCE
1000

1000
TJ'250C -

700
500

...
z
...""

,,'

.....

...

.!>

Cib

..........
100

,

TJ = 25°C

Cob

";::z 200

200

§

"""...... ~

u: 400

.......

300

.!>

600

.......

r-

Cib

.....

13

~ 100

r-..
Cob

y~

70
50
30
0.2

60
0.5

1.0

2.0

5.0

10

50

20

100

40
0.2

200

0.5

1.0

VR, REVERSE VOLTAGE (VOLTS)

2.0

5.0

10

20

50

100

VR. REVERSE VOLTAGE (VOLTS)

FIGURE B - DC CURRENT GAIN
400

1000
500 r-- I-- r- TJ

-.::..

z

~

...z

200

a"'"'
"'"
~

100

1500C
200

r-

I
I-

25°C

II

=

...'"~

I

03

100

"' B
a o-

......

~

r-....
0.5

1.0

2.0

r--~

-c- ~

-55°C

.......

"c

I
0.2

25°C

VeE"2.0V

;;:

~I'-.

-55°C

20

:=TJ" I~Oe

z

0-

50

10
0.1

300

VeE - 2.0 V

3.0

40

.....
.....

30
5.0

20
0.1

10

IC. COLLECTOR CURRENT (AMPI

0.2

0.3

0.5

1.0

2.0

3.0

Ie. COLLECTOR CURRENT (AMP)

1-181

5.0

10

®
PLASTIC NPN SILICON HIGH-VOLTAGE
POWER TRANSISTOR

MOTOROLA

0.5 AMPERE

• .. designed for use in line·operated equipment such as audio output
amplifiers; low'current, high-voltage converters; and AC line relays

POWER TRANSISTORS
NPN SILICON

• Excellent DC Current Gain - hFE = 30-250 @ IC = 100 mAdc
• Current·Gain - Bandwidth Product tr = 10 MHz (Min) @ IC = 50 mAdc
• Packaged in Thermopad Case for Low Cost

250-300-360 VOLTS
20 WATTS

*MAXIMUM RATINGS
Rating

Svmbol 12N5656 2N5656

'2N5657

VCEO

250

300

350

Vdc

Coliector·Ba.. Voltage

VCB

275

325

375

Vdc

Emitter-Base Voltage

VEB

_6.0_

Vdc

IC

-0.5-1.0-

Adc

lB.

_0.25_

Adc

Po

20
0.16

Watts

Collector-Emitter Voltage

Collector Current - Continuous
Peak

Base Current
·Total Power Dissipation@Tc = 2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Range

wflc
°c

-65 to +150

TJ. Tstg

Unit

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

6.25

-Indicates JEDEC Registered Data

~H

K

FIGURE 1 - POWER DERATING
40

g
!z

311

0

~

iii
c

20

or

~
~

-..

r-

r-.....

10

~

STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE

-

..........

~.

0
25

50

15

........... ~

100

126

150

TC. CASE TEMPERATURE (OCI
FIGURE 2 - SUSTAINING VOLTA\3E TEST CIRCUIT

so ..

~

;JITO.'

.

y
TO SCOPE

~

y

,oo "

.

sovT

MILLIMETERS
INCHES
DIM MIN MAX
MIN
MAX
A 10.BO 11.05 0.425 0.435
1.49
B
7.15
I 0.305
C
2.41
2.67
I 0.105
0.51
0
0.66
1 0.026
2.92
F
3.18
2.31
2.46
G
1 0.097
H
1.27
2.41
1 0.095
J
0.3B
0.64
1 0.025
K 15.11 16.64
~
30 TYP
M
P
Q
3.16
4.01 0.148 0.158
R
1.14
1.40 0.045 0.055
S
0.64
0.89 0.025 0.035
U
3.68
3.94 0.145 0.155
V
1.02
0.040

r4ill-

CASE 77·04

TO-l28

"

s • • Ar.. Limits ar. indicated by Flgu.... 3 and 4. Both limits are applicable and mult be obearved.

1-182

2N5655,2N5656,2N5657
·ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristic

Symbol

Min

Ma.

250
300
350

-

250
300
350

-

-

0.1

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(Ie == 100 mAde (inductivel. L '" 50 mHI

Vde

VCEOlsus)
2N5655
2N5656
2N5657

Collector-Emitter Breakdown Voltage
(Ie'" 1.0 mAde, 'e '" 0)

Collector Cutoff Current
IVCE = 150 Vde, Ie = 0)

2N5655

IVCE = 200 Vde, Ie = 0)

2N5656

IVCE = 250 Vde, Ie = 0)

2N5657

mAde

ICEO

Collector Cutoff Current

0.1
0.1
mAde

ICEX

IVCE = 250 Vde, VESloffi = 1.5 Yde)

2N5655

IVCE = 300 Vde, VESloff) = 1.5 Yde)

2N5656

IVCE = 350 Vde, VESloll) = 1.5 Vde)

2N5657

IVCE = 150 Vdc, VESloff) = 1.5 Vde, T C = 100"C)

2N5655

IVCE = 200 Vde, VESloffi = 1.5 Vde, TC = 100 0 C)

2N5656

IVce = 250 Vdc, VeSlofl) = 1.5 Vde, TC = l00 o C)

2N5657

Collector Cutoff Current
IVcs = 275 Vde, Ie = 0)

2N5655

IVCS = 325 Vde, Ie = 0)

2N5656

IVce = 375 Vde, Ie = 0)

2N5657

-

0.1
01
01
1.0
1.0
1.0
IlAdc

Iceo

-

Emitter Cutoff Current
IVes = 6.0 Vde, IC = 0)

1111

Vde

eVCEO
2N5655
2N5656
2N5657

10
10
10
10

lEBO

JolAde

ON CHARACTERISTICS
DC Current Gain (1)

hFE

(Ie = 50 mAde, VeE

==

10 Vdc)

(Ie = 100 mAde, VeE::: 10 Vdcl

25
30

(Ie = 250 mAde, VeE::: 10 Vdc)

15

(Ie = 500 mAde, VeE = 10 Vdc)

5.0

Collector-Emitter Saturation Voltage (1)

= 100 mAde,

250

Vde

VCElsat)

'8 = 10 mAde)

1.0

(Ie = 250 mAde, IS = 25 mAde)

2.5
10

(Ie

!Ie

500 mAde, IS '" lOa mAde!

=

Base-Emitter Voltage (1)

10

Vse

Vde

(Ie = 100 mAde, VCE '" 10 Vdcl

DYNAMIC CHARACTERISTICS
Current-Gam-Bandwldth Product (2)
(lc ~ 50 mAde, VCE = 10 Vdc, f '" 10 MHz)

IT

Output Capacitance
IVes = 10 Vde, Ie = 0, I = 100 kHz)

Cob

Small-Signal Current Garn
lie = 100 mAde, VeE = 10 Vdc, f = 1.0 kHz)

hI.

MHz

10
25

pF

20

• IndIcates JEDEC RegIstered Data for 2N5655 Series
(1) Pulse Test. Pulse Width"!! 300 /-IS, Duty Cycle'5 2 0%.
(2) fT IS defined as the frequency at which !hfe! extrapolates to unity

FIGURE 3 -

ACTlVE·REGION SAFE OPERATING AREA

1.0

~

10",0.5

...

S

....
~

0.2

a'"

0,

o

t;

j

1

'\

~

TJ=150oc

r-f

r\.

Second Breakdown limit
-Thermal Limil@Tc 25°C
0,05 - - - - Bonding Wire Limit

8
:}

r-

r----:.

CUi aT bj'"j

0.01
20

'rei

30

40

60

'\..

!'\

100

1.0ms

- -

1"

~

200

300

'rJ(pk) =

150°C; T C is

variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T J(pk)S150 0 C. At high
case temperatures, thermal limitations will reduce the power that
can be handled to values Ie. than the limitations impoled by second
breakdown.

~dC

~

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating are. curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i:e., the transistor must
not be subjected to greater dissipation than the curve, indicate.

The data of Figure 3 is based on

[\

=

ICED
2N5655
2N56562N5657

II

0.02

' \ 500 ••

-

400

600

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1-183

2N5655,2N5656,2N5657

III

FIGURE 4 - CURRENT GAIN
300
200

TJJ5(JO~

I
z

~

ffi
a
a:
a:

100

--- --

+1000C

--! -

0

50

Q

--

+250 C

~

'"

~

W

~

r=:. r--- -

..1---

30

20 f - - - -550

..J-- I-

I

I--

r--

-~ ~

t\

2.0

5.0

3.0

7.0

211

10

50

30

lC. COLLECTOR OURRENT

~

I

~. ..I"'''''''' hi

0.6

/

!:;

/

0.4

I0.2

VCE(..t) IC/IB = 10

-

.--

IC/IB = 5.0

10

20

t"1'

100

'"
«
0z

70

;:;
~

50

",'

30

~

,

t-

100

200

300

500

0.2

0.5

5.0

10

50

20

100

FIGURE 8 - TURN'()FF TIME

+=

-

t,-

"
~t- td

"

IC/IB'10
-' _ VCC = 300 V. VBElolf)- 2.0 V
(2N5656. 2N5657. only, 1=
-VCC clOD V. VaE(oll) = 0 V

0.2
0.1

...
w

0.02
0.01
1.0

2.0

5.0

10

20

50

100

200

" [\.,

I',

1.0

>=

-

0.05

I, _

r-...

I'.

j

.. . ..

2;

t-

IC/IB= 10

,

5.0

2.0

0.5

w

.

2.0

10

5.0

>=

1.0

VR. REVERSE VOLTAGE (VOLTS)

FIGURE 7 - TURN'()N TIME

j

,..

I'
0.1

10

2.0

Cob

20

t-

lC. COLLECTOR CURRENT (mA)

1.0

TJ =+250 C

10

50

30

500

w

I I 1

o

~ ~'

t-..
0!!-

~

V 1./
V
TJ = +25 0 C
I I I

1-"-10-

300

200

~ibl

200

~

/

VBE@VCE=IOV

w
to

0

'r1

liD..--

«

>
.,;

I\, ""

300

II

IVB~("~)~ I~ABI= 10

~

•

.........

FIGURE 6 - CAPACITANCE

" II

Q

-

~

(mA)

FIGURE 5 - "ON" VOLTAGES
1.0

0.8

100

70

~
~

~~
~

10
1.0

~

- VCE"2.0V

L:--,

~ 1-'-

~

-- VCE-l0V

0.5

If

N VCC=,100V
Tt~

VCC-300V
I ~
(Typo 2N5656. 2N5657. onlY~ll

0.2

O. 1
500

1.0

2.0

5.0

10

20

50

IC. COLLECTOR CURRENT

IC. COLLECTOR CURRENT (mA)

1-184

(mA)

100

200

,I>
500

®

2N5683, 2N5684 PNP
2N5685,2N5686 NPN

MOTOROI.A

50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY
SILICON POWER TRANSISTORS
. designed for use in high-power amplifier and switching circuit
applications.
•

High Current Capability - IC Continuous = 50 Amperes.

•

DC Current Gain hFE = 15-60@IC=25Adc

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc

60-80 VOLTS
300 WATTS

-MAXIMUM RATINGS
2N5683
2N5685

2N5684
2N5686

Unit

VeEO

60

80

Vdc

Collector-Base Voltage

VeB

60

80

Emitter-Base Voltage

VEB

5.0

Rating

Symbol

Collector-Emitter Voltage

Vdc
Vdc

Collector Current - Continuous

Ie

50

Adc

Base Current

IB

15

Adc

Total Device Dissipation@Tc == 25°C
Derate above 25°C

PD

300
1.715

Watts
WIDe

TJ.T stg

-65 to +200

De

Operating and Storage Junction
Temperature Range

C

--~~-+--J...

-THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
·lndicatesJEOEC Registered Data.

FIGURE 1 - POWER DERATING
30a

a

"""- "~

a
a

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE. COLLECTOR

"- "-

DIM
A

'"

a

1"""- "-

..... ~

B
C
D
E
F
G
H
J
K
Q

W

~

~

00

~

lW

~

1~

~

WO

TEMPERATURE (DC)

R

MILLIMETERS
MIN
MAX

38.35
19.30
6.35
1.45

39.37
21.08
7.62

29.90
10.67
5.21
16.64
11.18
3.84
24.89

30.~

1.~

INCHES
MIN
MAX

1.510
0.760
0.250
0.057

3.43
11.18
5.72
17.15
12.19
4.09
26.67

1.177
0.420
O.W5

0.655
O.~

0.151
0.980

1.550
0.830
0.3OU

0.063
0.135
1.197
O.~

0.225
0.67
0.480
0.161
1.050

CASE 197·01

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

1-185

TO·3 Except Pin Diameter

2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic

" Svmbol

Min

Ma.

60
80

-

-

1.0
1.0

-

2.0
2.0
10
10

-

2.0
2.0

-

5.0

15
5.0

60

-

Unit

OFF CHARACTERISTICS
Collector~Emitter

Sustaining Voltage (Note 1)

Collector Cutoff Current

Collector Cutoff Current

= 60 Vdc,
= 80 Vdc,
= 60 Vdc,
= 80 Vdc,

mAde

ICEO
2N5683,2N5685
2N5684,2N5686

(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE
(VCE
(VCE
(VCE

Vdc

VCEO(sus)

2N 5683, 2N 5685
2N5684,2N5686

(IC = 0.2 Adc, 18 = 0)

mAde

ICEX

VEBloff) = 1.5 Vdc)
VEB(off) = 1.5 Vdc)
VEB(off) = 1.5 Vdc, TC = 150o C)
VEB(off) = 1.5 Vdc, TC = lWOC)

2N5683, 2N5685
2N5684,2N5686
2N5683,2N5685
2N5684,2N5686

Collector Cutoff Current

mAde

ICBO
2N5683,2N5685
2N5684,2N5686

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current

lEBO

mAde

(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)

-

hFE

(lC = 25 Adc, VCE = 2.0 Vdc)
(lc = 50 Adc, VCE = 5.0 Vdc)
Coliector·Emitter Saturation Voltage (Note 11

-

Vdc

VCE( ..,)

(lC = 25 Adc, 18 = 2.5 Adc)
(lC = 50 Adc, 18 = 10 Adc)

-

1.0
5.0

BaseMEmitter Saturation Voltage (Note 1)
(lC = 25 Adc, IB = 2.5 Adc)

VBE(..,)

-

2.0

Vdc

Base-Emitter On Voltage (Note 1)

VBE(on)

-

2.0

Vdc

for

2.0

-

MHz

Cob

-

2000
1200

pF

hfe

15

-

(lC = 25 Adc, VCE

=2.0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N 5683, 2N 5684
2N5685, 2N5686

Small-Signal Current Gain

(lc = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
·'ndicates JEOEC Registered Data
Note 1: Pulse Test: Pulse Width :s:; 300 ,",s. Duty Cycle:s:; 2.0%.

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
VCC
+2.0 V

-30 V
FIGURE 3 - TURN'()N TIME

I

1.0

o=!'l

TO SCOPE
tr"20 ns

Re

0.7
O.5

Ir .. J W I 2 v

20ns

I

I

'-IOloIOO~s

-I

0.2

DUTY CYCLE ~ 2.0%
VCC

o-------C~IO
-~

-30 V

w

'"

S

-

.....

O. 1
0,0 1

r...:: ~

i-I-

- - 2NS683, 2NS684 (PNP)
- - - 2NS6eS,2NS686(NPN)

0.05

--...

V>--.J'W'-..-f-t

~

-12V I
-,

Ir

O. 3

:--tr<:2Dns
1-1010 IDO~s

0.0 2

TJ =25"C
Ielle = 10
VCC = 30V

0.0 I

III

0.0 3

Re
Vea

DUTY CYCLE ~ 2.0%

0.5 0.1

FOR CURVES OF FIGURES 3 & 6, Re & RL ARE VARIED.
INPUT LEVELSARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

1.0

2.0

3.0

5.0 1.0

10

Ie, COLLECTOR CURRENT (AMP)

1-186

'- ~
20

30

50

2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN

FIGURE 4 - THERMAL RESPONSE
1.0
O.

o.\-5

....

«

L

r-D

0.5

~~ O. 3

.... N

0.2

~~

0.1

~~ O. 2
~ ~ O. I

-

0.05

"'~~O.O 7 - " - ,---0.02
>'"
t~O.O5
~ faD.03

~'"
w
0.02

"'2

.......

0.0 I
0.02

~~

- ::;;:P'
-:;::.

~UTY

TJ1Jl

-

q~2~

II

Jl

0.1

-

CYCLE. 0 q/t2

Pi:'

0.01
f'INGLEI PUiSE

0.05

9JC!t) - r(tI.OJC
OJC - 0.584 oCIW Max I I
I
o CURVES APPL Y FOR POWE~=
PULSE TRAIN SHOWN
I--READTIMEATq
- fI- TJ(pk) - TC = P(pk) 9JC!t)- f -

....:::;;; ljiiiiil"'"

I--""

0.2

0.5

1.0

2.0

5.0

11111

10

20

50

100

500

200

1000

2000

t. TIME (m,)

FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA

100
SO~!,,

0

, ....

1i:"

'"
....
~

0

~

g;
<..)

de ......

0

5.0

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pkl = 200°C; TC is variable

1\ 1.om~

5.0

TJ -200°C
SECOND BREAKDOWN LlMITEO
- - - BONDING WIRE LlMITEO
1. 01=='---- THERMALLY LlMITED@TC=250C
(SINGLE PULSE)
o. Sf::
CURVES APPLY BELOW
RATED VCEO
2N5683, 2N5685 ~
o.2
2N5684, 2N56B6
O. 1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70

depending on conditions. Second breakdown pulse limits are valid

\ 1\

2.

8
:2

1-.

~:--

' .....

g. . or-.--'"

I DO!"

for duty cycles to 10% provided T J(pkl ';;;2000C. T J(pkl may be

F

II II

ealculated from the data in Figure 4. At high case temperatures,

thermal limitations will reduce the power that can be handled to

values less than the limitations imposed by second breakdown.

I

100

VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

FIGURE 6 - TURN.QFF TIME

4.0
- - 2N5683, 2N5684 (PNPI
- - - 2N5685, 2N5686 (NPNI

3.0
2.0

... -:~
Is

FIGURE 7 - CAPACITANCE

TJI=250~- rId"~:\~2 - I-VCE =30V -

~ 1.0

'"

;::

-'

3000

I-~

~

w

~

<..)

'"....
«

w

T~ =12JO~

......"

1---1

t,....

..... :::::..

5000

2000

--

f"'o""
...........

' .....

...........

G

0.8

~

0.6
tf

f"oo,

0.4

-

...... ::::..:::.-

0.3
0.2
0.5 0.7

1.0

«

. . . . r,

...........

2.0·

3.0

5.0 7.0

10

<..)
<..).

""- 1'0.. r....
.-,30

~.~b

"

1000

700 - . - - - 2N5683, 2N5684 (PNPI
- - 1 - ' 1 fNfWi 5686 (~PN\
500
0.1
0.2
0.5
1.0
2.0

Cib

~
,

rr

i'<"
20

~

50

IC. COLLECTOR CURRENT (AMP)

I'
5.0

10

VR, REVERSE VOLTAGE (VOLTSI

1-187

C~b
20

50

100

2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN

PNP
2N5683. 2N5684

NPN
2N5685. 2N5686

I

FIGURE 8 - DC CURRENT GAIN

500

TJ = +150 0C

300
200

z

~

...~

.
:::>

'"'
'"'c

~

100
10
50

~
w

to

.

>

200

+ 25°C

100
10
50

- - VCe=2.0V_1- - - VCE=10V

...

- - ....
-.....;

::'1:::

--

-55°C

('\

0.1

1.0

2.0 3.0
5.0 1.0 10
IC. COLLECTOR CURRENT (AMP)

20

10
1.0
5.0
0.5

50

30

0.1

1.0

2.0 3.0
5.0 1.0 10
IC. COLLECTOR CURRENT (AMP)

FIGURE 9 - COLLECTOR SATURATION REGION
_ 2.0

2.0

\

Tj =

i

1.6
IC= lOA
1.2

25 A

\
\

0.8

1\

0.4

w

to

0.2

r--

IcLoA

I'~

1'-["'1

20

30

50

Jo!

T1J =1 2

~

o

~

r--:--

:iii
~

I"-

g

-

_

o

'"'~
1.0
2.0
0.5
la. BASE CURRENT (AMP)

3.0

1.2

~

>

0
0.1

1.6

.......

I
~5A- I-- 40~

~

c

C

\40 A

\

\

~5~cl

'"

r-..... ... ~ ~

30

w
.li- 20

~ 1......

o

'"'~

'"''"'c

~ t-..

20

o

~_

r-TJ=+1500C
::1"-

;;:

...~
:::>

~
~

'z

~~~

to

o

300

-55°C

;:j
>

---....- ...

3D

10
1.0
5.0
0.5

~

H+J:.:"
+25 0C

500

-

- - VCE=2.0V_
- - - VCE=10V

5.0

10

0.8

\
\
\

0.4

0
0.1

r-

r---

-

0.2

0.3

-

0.5
1.0
2.0
lB. BASE CURRENT (AMP)

3.0

5.0

10

FIGURE 10 - "ON" VOLTAGES

2.5

2.0

tl=12~OC

VI

2.0

~

c

C

./.V

. . .V

w

to

;:j
0

~ ;:...-'

1.0

>
>'

VBE( ..t)@IC/IB= 10
0.5

o

VBE@VCE = 2.0 V
III
I I
VCE( ..t)@ICIIB= 10

0.5 0.1

1.0

l,...-

'"

s

J

~

II

w

~

c5 o.B Vr~(~tl @IC1B ~

>
>'

V
20

//

1.2

to

/

VBE @VCE = 2,0 V

--

30

50

1-188

/

-

//

:,...-

'I

/

VV

f-

O.4

/'

2.0 3.0
5.0 1.0 10
IC. COLLECTOR CURRENT (AMP)

1.

1. 6

III

1.5

))~50C

J

,/

V

VU(U)@IC)IB='IO
0
2.0 3.0
5.0
0.5 0.1 1.0
10
IC. COLLECTOR CURRENT (AMP)

20

30

50

®

2N5758, 2N5759, 2N5760
2N6226, 2N6227, 2N6228

MOTOROLA

NPN
PNP

III
HIGH-VOLTAGE HIGH-POWER
SILICON TRANSISTORS

6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON

· .' . designed f~r use in high power audio amplifier applications and
high voltage sWitching regulator circuits.
•

High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N5758, 2N6226
= 120 Vdc (Min) - 2N5759, 2N6227
= 140 Vdc (Min) - 2N5760, 2N6228

•

DC Current Gain @ IC = 3.0 AdchFE = 25 (Min) - 2N5758, 2N6226
= 20 (Min) - 2N5759, 2N6227
= 15 (Min) - 2N5760, 2N6228

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc

100-120-140 VOLTS
150 WATTS

'MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

2N5758
2N6226
100
100

VCEO

Collector-Base Voltage

VC8

Emitter-Sase Voltage

VE8

Collector Current - Continuous
Peak

IC

Base Current

18

Total Device D,sslpat,on@TC-25OC
Derate above 25°C

Po

Operating and Storage Junction,

2N5759
2N6227

-

2N5760
2N6228

Vdc

6.0---10_

Adc

4.0_

150_0.857_

TJ. T stg _

Unit

120
140
120
140
7.0-

Vdc
Vdc

Adc

THERMAL CHARACTERISTICS
Characteristic

+

I

Symbol

1

Max

1

()JC

I

PLANE

wf'c

Temperature Range

Thermal ReSistance, Junction to Case

STYLE I.
PIN 1 BASE
2. EMITTER
CASE' COLLECTOR
NOTE'
1. DIM "Q" IS OIA

Unit

DC/W

1.17

I---F-

I--J-

Indicates JEDEC Registered Data

140

I - - r-.,.

:;;;
~

z
0

;::

:i:

Bi
0

~

~

~

H

120

"'-

100
80
60

"" ""-

40
20
0
0

25

50

~'t7

t

......... r-.,.

>-

~
1
+-,!~~

0IA¥i'1

FIGURE 1 - POWER DERATING
160

I

E SEATING

Watts
DC

-65 to +200 -

Lr~
r~,

75

100

DIM
A

MILLIMETERS
MAX
MIN

-

B

""

125

C

~

150

":::::

175

200

TC. CASE TEMPERATURE IUCI

D
E
F
G
H
J
K

6.35
0.99

29.90
10.67
5.3
16.64
1118
Q
3.84
A

39.37
21.08
762
1.09
3.43
3tJ.40
11.18
5.59
17.15
12.19
409
26.67

INCHES
MIN
MAX

0250
0039
1.177
0420
0.210
0.655
0.440
0151

-

Collectorcollnected to case

Safe area limits are IndIC.ated by Figure 5

CASE 11·01
TO-3

80th limits ar. applicable and must be observed.

1-189

1

1550
0.830
0.300
0.043
0.135
1197
0.440
0220
0675
0.480
0161
1.050

I

2N5758,2N5759,2N5760 NPN
2N6226,2N6227,2N6228 PNP

'ELECTRICAL CHARACTERISTICS (TC = 2S o C unless otherwise noted)

I

I

Characteristic

Symbol

Min

Max

100
120
140

-

Unit

OFF CHARACTER ISTICS
Collector-Emitter Sustaining Voltage (1)

2N5758,2N6226
2N5759,2N6227
2N5760,2N6228

IIC ~ 200 mAde, IS ~ 0)

VCEO(sus)

Collector Cutoff Current
(VCE ~ Rated VCS, VSE(olfi ~ 1.5 Vdel
(VeE = Rated Ves. VBE(off) = 1.5 Vdc, TC

-

1.0
5.0

-

1.0

-

1.0

25
20
15
5.0

100
80
60

mAde

= 150°C)

mAde

ICSO

Rated VCS, IE ~ 01

7.0 Vde, IC

1.0
1.0
1.0

-

Emitter Cutoff Current
~

-

ICEX

Collector Cutoff Current

(VSE

mAde

2N5758, 2N6226
2N5759,2N6227
2N5760,2N6228

(VeE = 50 Vdc, '8 = 0)
(VCE ~ 60 Vde, IS ~ 01
(VCE ~ 70 Vde, IS ~ OJ

=

-

ICED

Collector Cutoff Current

(VCS

Vde

-

mAde

IESO
~

01

ON CHARACTERISTICS (11

DC Current Gal n'
(lC ~ 3.0 Ade, VCE ~ 2.0 Vdel

ile

hFE
2N5758,2N6226
2N5759,2N6227
2N5760,2N6228
All Tvpes

~ 6.0 Ade, VCE ~ 2.0 Vdel

Coliector·Emltter Saturation Voltage
(IC ~ 3.0 Ade, IS ~ 0.3 Adel
(IC ~ 6.0 Ade, IS ~ 1.2 Adel

Vde

VCE(satl
1.0
2.0

Base-Emitter On Voltage

Vde

. VBE(onl
1.5

(IC ~ 3.0 Ade. VCE ~ 2.0 VdcJ
DYNAMIC CHARACTERISTICS
Current-Galn - BandWidth Product
(Ie = 0.5 Adc, VeE == 20 Vdc, f test::: 0.5 MHz)

MH,

iT
1.0

Output Capacitance
(Ves = 10 Vdc, 'E == 0, f::: 0.1 MHz)

Cob

Smail-Signal Current Gain

hie

pF
300
15

(Ie = 2.0 Adc, VeE = 10 Vdc, f '" 1.0 kHz)
·Indlcates JEDEC Registered Data
(1) Pulse Test
(2) fT

'=

lhfe

Pulse Width

Ie

<;

300 f./.s, Duty Cycle ~2 0%

f test

FIGURE 2 - SWITCHING TIME TEST
CIRCUIT
VCC
+30 V

SCOPE

RB

51

01

l r• If:::10 115

-40 V

DUTY CYCLE'" 1 0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0, MUST BE FAST RECOVERY TYPE. eg
MB05300 USED ABOVE IB
MS06100 USEO BELOW IB

*For PNP test circuit, reverse all polarities and 01.

1-190

~100
~IOO

rnA
rnA

2N5758,2N5759,2N5760 NPN
2N6226,2N6227,2N6228 PNP
NPN
2N5758, 2N5759, 2N5760

PNP
2N6226, 2N6227, 2N6228

I

FIGURE 3 - TURN·ON TIME
0

10

7

"""-

o. 5

:g

O. 3

.......

O. 2

"

>=

r-

..........

~

.....

Tr250 C ICIIB'10
VCC'30V

I,

VSE(off)"t' 5.0 V

f;:::p

I'-.

~ 0.2

VCC' 30 V
ICIIB'10
VBEloff)' 5.0 V TJ = 25°C
-

.......

~

k.: -- I--

05

I,

I"-

0.1

Id

005
Id

1

0.02

00 7
00 5
006

01

04

02

06

1.0

20

4.0

0.0 1
0.06

60

0.4

0.2

0.1

1.0

06

4.0

20

6.0

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT lAMP)

FIGURE 4 - THERMAL RESPONSE
0
_ O.

~ O.

>-"

~~ O.

~=O

05

--=

3-0~

P"'

~ ~ O. 2



u

'"
0

~

~

5.0 ms

....

,,\

__ ~

B~NOINGWIRE

\

===t:=LlMITEO
O. 5 ----THERMALLy LIMITED
O.3
O. 1

"

There are two limitations on the power handling ability of a

1.Oms

2. 0
1. o

005ms
01ms--

05ms

- T J 2000 C

=+

"

---t-iE~~~~5:~EAKOOWN LIMITE

O. 1
10,

CU RVES APPLY BE LOW ,( ,j,
RATED VCEO 1N5760,1N6118
1N5759,1N6117
1N5758 1N6116
30
50
70
20

I IT

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - V CE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.;
The data of Figure 5 is based on T J(pk) = 200; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(pkl~ 2000 C. TJ(pkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations wIll reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

I"
f-I+100

200

300

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-191

2N5758,2N5759,2N5760 NPN
2N6226,2N6227,2N6228 PNP
NPN
2N5758, 2N5759, 2N5760

PNP
2N6226, 2N6227, 2N6228

I

FIGURE 6 - TURN·OFF TIME
6.0

10

-- r-

4.0
3. 0

VCC~30V

2. 0

1. 0
If

o.6

r--. Is

"

w

TJ - 25°C
VCC ~ 30 VIclis ~ 10' lSI ~ IS2-

20

ro-.'s

""3

";:::

0

lSI ~ IS2
Ie/Is ~ 10
TJ = 25°C

r--

05
If

0.2
0.4
O. 3
0.06

0.2

0.1

04

0.6

10

4.0

2.0

0.1
0.06

6.0

0.4

0.2

01

Ie, COLLECTOR CURRENT (AMP)

06

1.0

2.0

4.0

6.0

IC. COLLECTOR CURRENT (AMP)

FIGURE 7 - CAPACITANCE

700

40 0

or--

30

~

TJ

f-.,.

~

25'C
50

I--

or- t=:::'

Tp25'C

~

20 0

f"--.

r--

~ t--

0

C,b

Cib
C,b
0

""

0
0

.....

.....

0

~.

III

40
0.1

02

0.5

1.0

2.0

5.0

10

20

50

I'

10 0
70
0.1

100

02

05

VR. REVERSE VOLTAGE (VOLTS)

1.0

2.0

50

10

20

50

100

VR. REVERSE VOLTAGE (VOLTS)

FIGURE 8 - OC CURRENT GAIN

500

200

--r-TJ

200

~

IS0'C

VCE

:--r--

~

2.0 V

z 100

.,

'"
I-

'"

l-

I
'"
~
0

50

r--

-55'C
20

0.1

0.2

0.4

0.6

1.0

TJ ~ 150'C

............

25'C

r- t--

-55'C

r--

VCE

........
2.0

70

~_

50

'"o

30

......

G

~

10
5.0
0.06

r-

~

2.0 V

=<

:--....

-t-

25'C

=< 100

--

~

*

"

...

10
o.06

6.0

IC. COLLECTOR CURRENT (AMP)

0.1

0.2

0.4

0.6

10

Ie. COLLECTOR CURRENT (AMP)

1-192

""~

......

20

r-4.0

~

20

""
"

40

6.0

®

2N5838
2N5839
2N5840

MOTOROLA

3 AMPERE

NPN SILICON
POWER TRANSISTORS

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

250-350 VOLTS
100 WATTS

· .. designed for high voltage inverters, switching regulators, and line·
operated amplifier applications. Especially well suited for switching
power supply applications.
•

High Coliector·Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) = 275 Vdc (Min) = 350 Vdc (Min) -

•

Excellent DC Current Gain hFE = 10-50@ IC = 2.0 Adc - 2N5839, 2N5840
= 8-40 @ IC = 3.0 Adc - 2N5838

*MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

VCEOlsusl
VCER

Collector-Emitter Voltage
IRSE = 50 nl

2N5838

2N5839

2N5840

250

275

350

Vdc

275

300

375

Vdc

Unit

VCEV

275

300

375

Vdc

Collector-Base Voltage

VCS

275

300

375

Vdc

Emitter-Base Voltage

VES

6

Vdc

IC

3
5

Adc

Collector-EmItter Voltage

Collector Current - Continuous
Peak
Base Current
Total Device Dissipation
Derate above 25°C

@

TC:= 25°C

Operating and Storage Junction
Temperature Range

IS

1.5

Adc

Po

100
0.56

Watts
W/oC

-65 to +200

°c

TJ, T stg

-

Characteristic

3. POSITIONAl TOLERANCE FOR
MOUNTING HOLE O.
STYLE 1
PIN 1 BASE
t EMmER
CASE COLLECTOR

I•

I t.1310.00'1 e I T Ivel

FOR LEADS:

I .II.l310.00'le T I ve I uel
4. OIMENSIONS AND TOLERANCES PER
ANSI Y14.5, 1973.

THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case

NOTES
1. DIMENSIONS Q AND V ARE QATUMS
2. ITJ IS SEATING PLANE AND DATUM.

Symbol

ROJC

L
I

Max
1.75

*Indicates JEDEC Registered Data.

L

I

Unit

°CIW

DIM
A
8
C
D
E
F
G
H
J

k
D
R
U
V

MILLIMETERS
INCHES
MIN
MAX
MIN MAX
- 39.37 - 1550
- 21.08 - 0830
6.35
7.62 0.250 0.300
0.97
1.09 0.038 0.043
0.055 0.070
1.40
1.1
30.15 BSC
1.187BSC
0.430BSC
10.92 Bse
5.46 Bse
0.21'Bse
16.89 Bse
0.66'Bse
11.18 12.19 0.440 0.480
3.81
4.19 0.160 0.165
26.67
1.050
4.83
5.33 0190 0.210
3.81
4.19 0.150 0.16'
CASE 1-05

1-193

2N5838,2N5839,2N5840

III

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Svmbol

Min

Max

Unit

2N5838
2N5839
2N5840

VCEO(sus)

250
275
350

Vde

2N5838
2N5839
2N5840

VCEX(sus)

275
300
375

2N5838
2N5839
2N5840

VCER(sus)

275
300
375

VEBO

6

-

IEaO

-

1

mAde

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage
(lC

= 200 mA,

IB

= 0)

Collector-Emitter Sustaining Voltage
(lC

= 100 mA, VBE(off) = 1.5 V, L = 10 mH)

Collector-Emitter Sustaining Voltage

(lC

= 200 mAde, RBE = 50 Ohms)

Emitter-Base Breakdown Voltage
(IE

= 20 mAde, IC = 0)

Emitter Cutoff Current
(VCE = 6 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 200 Vde, IB = 0)
(VCE = 250 Vdc, la = 0)
(VCE = 250 Vdc, la = 0)

ICEO

Vde

Vde

Vde

mAde

-

2
2
2

-

5
2
2

-

8
5
5

20
10
8

50
40

-

1.0
1.5
1.5

-

2
2
2

Ihie I

5

-

MHz

Cob

-

150

pF

Second Breakdown Collector Current with Base Forward Biased
t = 1.0 s (non-repetitive) (VeE = 40 Vdc)

ISlb

2.5

-

Ade

Second Breakdown Energy with Base Reverse Biased

ES/b

0.45

Svmbol

2N5838(2)

2N5839

2N5840

Unit

tr

1.5

1.5

1.75

~s

ts

3.0

3.75

3.0

"s

tf

1.5

1.5

1.5

"s

2N5838
2N5839
2N5840

Collector Cutoff Current

mAde

ICEV

(VCEV "265 Vdc, VaE(oll)
(VCEV = 290 Vde, VaE(oll)
(VCEV = 360 Vde, VaE(off)

= 1.5 Vde)
= 1.5 Vde)
= 1.5 Vde)

2N5838
2N5839
2N5840

Collector Cutoff Current

(VCEV
(VCEV
(VCEV

-

ICEV

= 265 Vde, VBE(oll) = 1.5 Vde, TC = 100°C)
= 290 Vde, VBE(oll) = 1.5 Vde, TC = 100°C)
= 360 Vde, VaE(off) = 1.5 Vde, TC = 100°C)

2N5838
2N5839
2N5840

mAde

-

ON CHARACTERISTICS (1)

DC Current Gain
(lc = 0.5 Ade, VCE = 5 Vde)
(IC = 2 Ade, VCE = 3 Vde)
(lC = 3 Ade, VCE = 2 Vde)

hFE
ALL TYPES
2N5839,40
2N5838

Collector-Emitter Saturation Voltage
(lC
(lC
(lC

= 3 Ade,
= 2 Ade,
= 2 Ade,

18
IB
IB

= 0.375 Add
= 0.2 Ade)
= 0.2 Ade)

Base-Emitter Saturation Voltage
(lC
(lC
(lC

= 3 Ade,
= 2 Ade,
= 2 Ade,

18
IB
IB

= 0.375 Ade)
= 0.2 Ade)
= 0.2 Ade)

Vde

VCE(s.t)
2N5838
2N5839
2N5840

Vde

VBE(sat)
2N5838
2N5839
2N5840

-

DYNAMIC CHARACTERISTICS
Current-GaIn-BandwIdth Product

(lC

= 200 mAde, VCE = 10 Vde, IteS! = 1 Mhz)

Output Capacitance
(Vca

= 10 Vde,

IE

= 0, f test = 1 MHz)

SECOND BREAKDOWN

(lC

= 3.0, VBE(off) = 4.0 Vde, L = 100 ~H)

mJ

SWITCHING CHARACTERISTICS MAXIMUM LIMITS

Resistive Load
Rise Time
Storage Time
Fall Time

"

I

J
I

(VCC - 200 Vde, IC = 2 Ade,
IBI ~ IB2 = 0.2 Ade,
tp = 100 "', Duty Cycle" 2%)

= 100 "s, Dutv Cycle = 2%.
For 2N5838, IC = 3 Ade, IBI = 182 =0.375 Ade

(I) Pulse Test: Pulse Width

(2)

1-194

2N5838,2N5839,2N5840

FIGURE 1 - THERMAL RESPONSE
I
7 f::O' 0.5
5

.-

3~ 0:2
2

I-

I-- 01

f- t;;; ....

11==.0.05

-

I-'""

pErUl

.-

tt--J

7~0.Q2
5

0.02

-

.-K

~UTY

001

SINGLE PULSE

0.0 1
0.01

I II
0.02 0.03

II :11
0 05

0.1

0.2

0.3

~ms

>-- 1,0

i

:::>

'"c:>

TC-25 0 C ::::::: E=:

0.5

<>

0.2

I-

t:::

~ S
0,1

80.05

2
0,02

-=

- - - -

~

~lms I--

_de

Bonding Wire limIted
Thermal Limitation

I"

(Smgle Pulse)
- - - Second Breakdown limited
Curves Apply Below

Rated VCEO

"
2N5838
2N5839 1-

l~5B40

0.01
5.0

Sync
Out

lOOp'

1'\1

2,0

7.0

10
50 70 100
20
30
200
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)

300

FIGURE 3 - SWITCHING TIMES
TEST CIRCUIT

30

50

100

200

300

500

1000

There are two limitations on the power handling
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC- VCE operation; i.e., the transistor must not be sub·
jected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25 0 C; T J(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C. Second b'reakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 2 may be found
at any case temperature by using the appropriate curve
on Figure 4.
TJ(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

5.0

5

20

TIME (ms)

FIGURE 2 - SAFE OPERATING AREA

,.

II

10

0.5
t,

&?

ReJCld =ride JC
ReJc::: 1.75 0 C,w Max .
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME A, '1
TJlpkl- TC =Plpk) ReJCI')

CYCLE, 0 -1]/'2

+Vcc
FIGURE 4 - POWER DERATING
100

~

Ie
Monitor

~

::.....
.............

0

........

""'" "'""'" ~

c:>

t;
:;: 60
~

~_

40

'"w
~

20

THERMAL
OERATING

i'-..

SECONO BREAKDOWN
DERATlNG-

i'---

........

r--...
...............

i'-,.

c:>

a

·'81 and 182 measured with Tektronix current
probe P6019 or equivalent.

"
o

40

80

120

TC, CASE TEMPERATURE IOC)

1-195

160

"""

"""

200

2N5875, 2N5876 PN P
2N5877, 2N5878 NPN

III)

®

COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS
· .. designed for general-purpose power amplifier and switching applications.
•

Low Collector· Emitter Saturation Voltage VCE(sat) = 1.0 Wc (Max) @ IC = 5.0 Adc

•

Low Leakage Current ICEX = 0.5 mAdc (Max)

•

@

MOTOROLA

10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

60-80 VOLTS
150 WATTS

Rated Voltage

Excellent DC Current Gain hFE = 20 (Min) @ IC = 4.0 Adc

• High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 0.5 A

*MAXIMUM RATINGS
Svmbol

2N5875
2N5877

2N5876
2N5878

Unit

VeEO

60

80

Vdc

Collector-Base Voltage

VeB

60

80

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current - Continuous
Peak

Ie

10

Adc

Base Current

18

4.0

Adc

Total Device Dissipation@Tc = 2SoC

Po

150
0.857

Watts

Rating
Collector-Emitter Voltage

20

Derate above 2SoC
Operating and Storage Junction

~65

T J. T stg

WIDe
De

tD +200

c

Temperature Range

THERMAL CHARACTERISTICS

Max

Characteristic

1.17

Thermal Resistance. Junction to Case

STYLE 1:
PIN 1 BASE
2. EMITTER
I--JCASE: COLLECTOR

r--F-

Q~Vz ~ II
.L..~~y+-~~
.1i:'~/:'i7~~l-c;~jR

FIGURE 1 - POWER DERATING
160

r-- "-

",,-

m;--'l

.......

0

~

MILLIMETERS
DIM MIN
MAX

""

0

0

"" ""

0

25

50

15

100

125

150

A
B
C
D

~

CASE "·01
TO-3

~

115

200

TC. CASE TEMPERATURE (OCI

1-19.6

39.37
21.08

6.35
0.99

f 29.90
G 10.67
H
5.33
J 16.64
K 11.18
Q
3.84
R

NOTE.
1. DIM "0"15 OIA.

INCHES
MIN
MAX

7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67

0.250
0.039
1.177
0.420
0.210
0.655
0.440
0.151

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

Collector connected to case.

2N5875, 2N5876 PNP, 2N5877, 2N5878 NPN
*ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Max

60
80

-

-

1.0
1.0

-

0.5
0.5
5.0
5.0

-

0.5
0.5

-

1.0

35

-

20

100

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)
(lC

2N5875, 2N5877
2N5876, 2N5878

Collector Cutoff Current
(VCE = 30 Vde, IB = 0)
(VCE = 40 Vde, 18 = 0)

= 1.5 Vde)

2N5875, 2N5877
= 1.5 Vdc)
2N5876,2N5878
= 1.5 Vde, TC = 150°C) 2N5875, 2N5877
= 1.5 Vde, T C = lS00C) 2N5876, 2N5878

-

mAde

ICBO

=60 Vde, IE =0)
= 80 Vde, IE = 0)

2N5875, 2N5877
2N5876, 2N5878

Emitter Cutoff Current
(VEB = 5.0 Vde, IE

mAde

ICEX

V8E(off)
VBE(off)
VBE(off)
VBE(off)

Collector Cutoff Current
(VCB
(VCB

mAde

ICED
2N5875, 2N5877
2N5876, 2N5878

Collector Cutoff Current
(VCE = 60 Vde,
(VCE = 80 Vdc,
(VCE = 60 Vdc,
(VCE = 80 Vdc,

Vdc

VCEO(sus)

= 200 mAde, 18 = 0)

lEBO

= 0)

mAde

ON CHARACTERISTICS

DC Current Gam (1)

-

hFE

(lC= 1.0 Ade, VCE = 4.0Vdc)
(lc = 4.0 Adc, VCE = 4.0 Vde)
(lc = 10 Ade, VCE = 4.0 Vde)

Collector-Emitter Saturation Voltage (11

4.0

1.0
3.0

VBE(sat)

-

2.5

Vde

VBE(on)

-

1.5

Vdc

fT

4.0

-

MHz

Cob

-

Vde

VCE(s.t)

(lC = 5.0 Ade, IB = 0.5 Ade)
(lC = 10 Adc, IB = 2.5 Adc)

Base-Emitter Saturation Voltage (1)
(lC = 10 Adc, IB

= 2.5 Adc)

Base-E mitter On Voltage (11

(lC = 4.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (21

(lc

= 0.5 Ade, VCE = 10 Vde, f test = 1.0 MHz)

Output Capacitance
(VCB

= 10 Vdc,

IE = 0, f= 1.0 MHz)

2N5875,2N5876
2N5877,2N5878

Small-Signal Current Gain
(lC = 1.0 Ade, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

pF

-

500
300

20

-

-

SWITCHING CHARACTERISTICS

Rise Time
Storage Time
Fall Time

0.7
(VCC = 30 Vdc, IC
See Figure 2)

= 4.0 Adc, IBl = IB2 = 0.4 Ade,

ts

1.0

tf

0.8

I'S

~Indicates

JEOEC Registered Dat8.
(11 Pulse Test: Pulse Width ~ 300 jJ.S. Duty Cycle < 2.0%.
(2) fT = Ihfe!- f tast
-

FIGURE 3 - TURN'()N TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

Vee
-30 v

1.0

O. 7
0.5

7.5U

+9.0V--rJ
0-0--l1V--~

Re

0.3
SCOPE

RB

~

25U
51

~

01

25/1S
t r• t1::=:10 AS
DUTY CYCLE =1.0%

For NPN test circuit,
reverse all polarities.

.:"...

0.2

Vee = 30 V
lellB -10
TJ=250 C

-

~

....;~

tr

I~

~

O. 1

S 0.07

td @VBE(off) = 5.0 V

........

0.05
+7.0 V

FOR CURVES OF FIGURES 3 and 6,
RB and RC ARE VARIED TO OBTAIN
OESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, e.g.
MB05300 USED ABOVE IB~100 mA
MS06100 USED 8ELOW 18~I00mA

~

0.03
0.02
0.0 1
0.1

-1-1--1
0.2

n

2N5875, 2N5876 (PNP)
N)
2N5
2ii7j

0.3

0.5 0.7

lY
1.0

2.0

3.0

IC, COLLECTOR CURRENT (AMPERES)

1-197

5.0

7.0

10

2N5875, 2N5876 PNP, 2N5877, 2N5878 NPN

FIGURE 4 - THERMAL RESPONSE
1.0

:i.

~_

wC

:w
~~

ffi~
;;;a:

o. 7 f=D - O.S
o. S

o. 31==
o. 2
r-

ZC

«Z

0.2

-

~ ~ 0.0 7::::: 0.Q2
~~o.oS
~ ~

tti ~ 0.03
~ 0.02 -

_... --

f-

0.1

:=::; o. '1==.o.OS
... on

-

i"""

pHUl

t~-J

om

8JC(I) = ,h) 8JC
8JC = 1.17 °C/W Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AlII
TJ(pk) - TC = P(pk) 9JC(t)

DUTY CYCLE, D = 11/12

SINGLE PULSE

'"

0.0 1
0.01

0.02 0.03

O.OS

II II

0.1

0.2

0.3

O.S

1.0

2.0

3.0

S.O

10

20

30

50

100

200

300

SOO

1000

I, TIME (m,)

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
20

iii
,.~
5

J-

~

:::>

<>

g;

~

8

!2

..............

......

I I II

1"-

..........

........

10
7.0
S.O r- ~TJ=200oC

0.1

i'

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation. i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.

1.Oms

de

"

3.0
2.0

5.0 ms

- - - - SECONO SREAKOOWN LIMITED
1.0
SDNDING WIRE LIMITED
0.7 - - - - - THERMAL LlMITATION@TC-2SoC
(SINGLE PULSE)
o.S

-

\ O.Sm,

\

The data of Figure 5 is based on T J(pk) = 200o C; T C is variable
depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided T J(pk)
2000C. T J(pk)
may be calculated from the data in Figure 4. At high case

--

temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.

0.3 I-Cu,vesApply Below Rated VCEO- 2NSB75, 2NS8772Nr87~, 2NS8j8
0.2
5.0
7.0
10
50
20
30
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

<

70

100

FIGURE 7 - CAPACITANCE

FIGURE 6 - TURN'()FF TIME
10
7.0
S.O
3.0

700

.....

-

2.0

!

:E

r-

--

1.0

t= 0.1

-

VCC - 30 V
IC/IB -10
lSI = IB2
TJ = 25°C

....

~
w

<>

-

,....

0.1

-

2.0

3.0

5.0

... r....

£

j
<.i

.....

100

7.0

10

IC, COLLECTOR CURRENT (AMPERES)

70
O.S

~ I"--.
~

<3 200

2NS87S, 2N587S (PNP)
- 2NS877, 2NS878 (NPN)
O.S 0.7 1.0
0.2 0.3

."" ~

«
J-

1-----

O. 1

300

Z

If

O. 3

b

Is

O.S

0.2

I
TJ=2SoC

SOO

-

Cib

poe

"<

- - - - 2NS87S,2NJStp)
- - 2NS877, 2N587S (NPN)

1.0

2.0

3.0

I>--..

Cob,~

5.0

~10

VR, REVERSE VOLTAGE (VOLTS)

1-198

r-.... .........

-- "
20

30

50

®

2N5879,2N5880, PNP
2N5881,2N5882 NPN

MOTOROLA

COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS

15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. designed for general·purpose power amplifier and switching
applications.

60-80 VOLTS
160 WATTS

• Collector-Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) - 2N5879. 2N5881
= 80 Vdc (Min) - 2N5880. 2N5882
• DC Current Gain hFE = 20 (Min) @ IC = 6.0 Adc
• Low Collector - Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc
• High Current - Gain-Bandwidth Product fT = 4.0 MHz (Min) @ IC = 1.0 Adc
• Recommended for New Circuit Designs

*MAXIMUM RATINGS
Symbol

2N5879
2N5881

2N5880
2N5882

Unit

VCEO

60

80

Vdc

Collector-Base Voltage

VCB

60

80

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

IC

15

Adc

Base Current

IB

5.0

Adc

Total Device Dissipation @TC== 25°C

Po

160
0.915

Watts
W/DC

TJ.Tstg

-65 tD +200

DC

Rating

Collector-Emitter Voltage

Collector Current - Continuous

30

Peak

Derate above 25°C
Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

I

Symbol

I

8JC

..

I

Max

I

I

Unit

1.1

I

°C/W

• 'ndlcates JEDEC registered data. Limits and conditions differ on some parameters and reregistration reflecting these changes has bean requested. AU above values maet or exceed
present JEDEC registered data.

I"-

0

~ATlNG/~~D
PLANE

STYLE 1:
PIN 1. BASE
2. EMITTER
(--JCASE: COLLECTOR

-F-

Q;'-x: / ' I
. ,t
H "

t

~
......

'"

CASE

.........

0

~

11·01

25

50

75

100

125

TC. CASE TEMPERATURE (OCI

A
B
C
D
E
F

G
H
J
K

.............

0

o

1

t\

t.;

./

TO-3

""-

o

~

Lc,I

MILLIMETERS
DIM MIN MAX

r-......
0

rC

1I

2

FIGURE 1 - POWER DERATING

160

B,

IFA~
.L
1

150

"'"

175

n

200

1-199

NOTE:
1. OIM "n"ls OIA.

R

6.35
0.99
29.90
10.67
5.33
16.64
11.18
3.84

39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67

INCHES
MIN
MAX

0.250
0.039

-

1.177
0.420
0.210
0.655
0.440
0.151

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

Collector connected to case.

2N5879, 2N5880 PNP, 2N5881, 2N5882 NPN

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless Qtherwise noted)
Characteristic

Symbol

Min

Max

60
80

-

-

1.0

-

1.0

-

0.5

Unit

OFF CHARACTERISTICS

Collector-Emitter SUstaining Voltage (11

Vde

VCEO(sus)

(lc' 200 mAde,lB = 0)

2N5B79, 2N5881
2N5880, 2N5882

, Collector Cutoff Current

ICEO

= 0)
IB = 0)

(VCE • 30 Vde, 18

2N5879, 2N5881

(VCE' 40 Vdc,

2N5880, 2N5882

Collector Cutoff Current

ICEX

mAde

mAde

(VCE = 60 Vdc, VBE(oll) = 1.5 Vde)

2N5879, 2N5881

(VCE

=80 Vde, VaE(off) • 1.5 Vdc)
=60 Vde, VaE(off) '1.5 Vde, TC = 150°C)
(VCE = 80 Vdc, VaE(oll) = 1.5 Vde, TC = 1500 CI

2N5880, 2N5882

-

0.5

(VCE

2N5879, 2N5881

-

5.0

2N5880, 2N5882

-

5.0

-

0.5

35

-

Collector Cutoff Current

ICBO

=60 Vde, IE = 0)
(Vca = 80 Vde, IE = 01
(Vca

2N5879, 2N5881
2N5880, 2N5882

Emitter Cutoff Current
(VEa = 5.0 Vde, IC = 0)

IEaO

mAde

0.5
mAde

1.0

ON CHARACTERISTICS
DC Current Gain (11
(lC = 2.0 Ade, VCE = 4.0 Vdel

-

hFE

(lC = 6.0 Adc, VCE = 4.0 Vdcl

20

100

(lc = 15 Adc, VCE = 4.0 Vdc)

4.0

-

Collector·Emitter Saturation Voltage (11

VCE(sal)

= 15 Adc,la =

1.0

-

4.0

VaE(sall

-

2.5

Vdc

VaE(on)

-

1.5

Vdc

IT

4.0

-

MHz

-

600
400

20

-

-

.J5
.J5

3.75 Adc)

Base-Emitter Saturation Voltage (1)
(lC = 15 Adc, la

= 3.75 Adc)

Base-Emitter On Voltage (1)
(lC =6.0 Adc,VCE

= 4.0 Vdcl

Vdc

-

(lC = 7.0 Adc, la = 0.7 Adc)
(lC

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (21
IIC= 1.0 Adc, VCE = 10 Vdc,l'esl

= 1.0MHzl

Output Capacitance

pF

Cob

(VCB = 10 Vdc, IE = 0, I = 100 kHzl

2N5879, 2N5880
2N5881,2N5882

Small-Signal Current Gain
(lC = 2.0 Adc, VCE = 4.0 Vdc, I = 1.0 kHz)

hIe

SWITCHING CHARACTERISTICS

Rise Time

(VCC = 30 Vdc, IC = 6.0 Ade,

Storage Time

lal = la2 = 0.6 Adc See Figure 2)

Fall Time

'r

0.7

IS

1.0

tt

0.8

"s

·Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width'S 300 jjS, Duty Cycle ~ 2.0%
(21 tT = ,hte,- f tes•

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - TURN-ON TIME
2.0

VCC

-30V

1.0

VCC=30V
ICIIS -10

0.7

TJ - 25°C

0.5
SCOPE

RB

15
51

0.3

~

o. 2

;::
01

......

....

"""

o. 1

+7.0 V

t r• tf:=:l0 ns'
DUTY CYCLE = 1.0%

ForNPN testCtrcUlt,
reverse all polaritIes.

~

0.0 3

0,

0.02
0.2

-

-

-

1 J
0.3

_r-

2N5879,2N5880(PNP)
-2N5881, 2N5882 (NPN)

lJUU
0.7 1.0

0.5

2.0

@ VSE(off) ~

5.0 V

~

3.0

5.0

IC, COLLECTOR CURRENT (AMP)

1-200

t=

t,

td

0.07
0.05

FO R CURVES OF FIGURES 3 "d B,
RB and Re ARE VARIED TO OBTAIN
DESIRED CURRErH LEVELS
MUST BE FAST RECOVERY TYPE, ,g.
MBOSlOO USED ABOVE IB ~100 mA
MSOB100 USED BELOW 'B ~100 mA

-

1=

7.0

10

20

2N5879, 2N5880 PNP, 2N5881;2N5882 NPN

FIGURE 4 - THERMAL RESPONSE

1. 0

o. 7=0
__ o. 5
"w
~

~~ O. 3== 0.2
O. 2
in'"
0.1
ZC

-

z«
UJ:i:

~: o. 1=0.05
~ ~ 0.0 7=0.02
~ ~ 0.0 5
~'"

~ 0.03

-

--

..-

I - ::;~

= O.7
.:
O. 3

~ 1000

200

.....
I-?"

If

----- 2N5~79, 2N58~

Cob
100

"WNPi

2~f8181, 2N1588211NPN\

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

IC, COLLECTOR CURRENT (AMPI

60
0.1

0.2

0.5

1.0

2.0

~

I

2N5879,2N5880 IPNPI
2N5881,2N5882 (NPNI
5.0

10

VR, REVERSE VOLTAGE IVOLTSI

1-201

-'t::::

20

50

100

2N5879, 2N5880 PNP, 2N5881, 2N5882 NPN

NPN
2N5881.2N5882

PNP
2N5879.2N5880
FIGURE 8 - DC CURRENT GAIN

IDJ

1000
700
500
~

'300

....

200

a'"

100

<
to

~
u

c

~

70
50

VCE = 4.0 V

t-- I -

TJ = 151J1lC
25 DC

"-

1000mlm§l~m
700
500

-55 DC

'" 70_m

......
~

20

25DC

~

-55DC

2.0

1.0

3.0

5.0 7.0

10

f--+-+-I+H++-+-+--+--+F'-+=~H-1-~~H
~-::l:,-.-L.,,l,-.J.~-!,l;,---l---='=-~J.....,IL,-.L,~L+-"""~-:!
0,3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20

10

0.5 0.7

[ " : : -

5:
20

-...-.

0.3

f--I--+-+-+-L!c4--l""''=--+-+--I---I--I-I--w...-~

200

a 100
g

30

0.2

VCP4.0V-/--

z
~ 300F~;:;;!:±±~!T,J=+150DC

~

-r--....

~

i=--I--

=

10
0.2

20

IC, COLLECTOR CURRENT lAMP)

IC, COLLECTOR CURRENT lAMP)

en

FIGURE 9 - COLLECTOR SATURATION REGION
2,0
TJ = 25 DC

2.0

!::;

I

II I
IC=3.0A

o

~
~ 1.6

to

:::,.

~

TJ= 25 DC

o

~ 1.2

1!j
a:

0.8

_

0.4

o

0

0.05 0.07

0.2

0.1

0.3

0.5

0.7

2.0

1.0

3.0

0.03

0.05 0.07

0.1

I

3,0

TJ=25DC

2

IVIEm~~
iSIEj(,CE

IIJI.I

)
yv

j

r- hVCIEI~t)~
0.5 0.7

1.0

2.0

~

II

k:1::'

~

1. 2

k

w
to

«

V

f5.0

~~I='

!::;
o
O.Sf- V1BElsatl@IC/IS= 10
>
>'
~
~BE ~ VfE ~ ~.Ol ~
o.4

~

3.0

~

in

!::;

/

3.0

2,0

0.7 1.0

1. 6

I

0
0.2

0.5

/I

TJ = 25 DC

o.4

0.3

FIGURE 10 - "ON" VOLTAGES
2.0

1.6

S

0.2

IB, BASE CURRENT ImAdel

IB, BASE CURRENT lAMP)

2.0

f-.

\

\

:3

0.03

-

1\

o

g

\

0.4

~

:::

\

o

>

II
1ZA

6.0 A

!::;

- -

1.2

~ 0.8

8~

IC = 3.0 A
1.S

«

o

ffi

~

w

~

III

~o

12A

6.0 A

7.0

10

20

IC, COLLECTOR CURRENTIAMP)

0
0,2

tiL) ~

0,3

ILlBI= 110

0,5 0.7

1.0

/
J..
-~
2.0

3.0

5.0 0.7

IC, COLLECTOR CURRENT lAMP)

1-202

10

20

®

2N5883, 2N5884 PNP
2N5885, 2N5886 NPN

MOTOROLA
COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS

25 AMPERE

· .. designed for general·purpose power amplifier and switching
applications.
•

Low Collector-Emitter Saturation Voltage VCE(sat) ~ 1.0 Vdc. (max) at IC = 15 Adc

•

Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage

•

Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc

•

High Current Gain Bandwidth ProductfT ~ 4.0 MHz (min) at IC = 1.0 Adc

COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS
200 WATTS

'MAXIMUM RATINGS
Rating
Coliector~Emitter

Voltage

Symbol

2N5883
2N5885

2N5884
2N5886

Unit

80

Vdc

BO

Vdc

VCEO

60

Collector-Base Voltage

VCB

60

Emitter-Base Voltage

VEB

5.0

Vdc

IC

25
50

Adc

Collector Current - Continuous

Peak
IB

7.5

Adc

PD

200
1.15

Watts
W/oC

TJ.Tstg

-65 to +200

°c

Base Current
Total Device Dissipation @TC

= 25°C

Derate above 2SoC
Operating and Storage Junction

.L~"~'

Temperature Range

~

THERMAL CHARACTERISTICS

Limits and conditions differ on some parameters and re-

registration reflecting these changes has been requested.
present JEDEC registered data.

All above values meet or exceed
Q

;'x/2M
H

FIGURE 1 - POWER DERATING

i
z

o

~

~

17 5
150
115

"'"

5

~

0

~

B

~

C
D

"-

5
25

50

I

j

~
A

E
F

.........

0

,,+

~

75

100

125

TC. CASE TEMPERATURE lOCI

150

G
H

"'" "'"
175

200

1-203

J
K
Q

R
NOTE:

t\

t;

/'

MILLIMETERS
DIM MIN
MAX

'"

100

'"w;0:

t

~

Q

I

0

STYLE 1:
r---- F - PIN 1. BASE
2. EMITTER
t--J- CASE: COLLECTOR

Thermal Resistance, Junction to Case
·'ndicates JEDEC registered data.

100

K

SEATING
PLANE

Characteristic

1

~r

INCHES
MAX
MIN

39.37
- 1.550
21.08
0.830
7.62 0.250 0.300
1.09 0.039 0.043
3.43
0.135
29.90 30.40 1.177 1.197
10.67
11.18 0.420 0.4411
5.33
5.59 0.210 0.220
16.64 17.15 0.655 0.675
11.18 12.19 0.440 0.480
3.84
4.09 0.151 0.161
28.67
1.050
Collector connected to case.

-

6.35
0.99

1. DIM "0'· IS DlA.

-

CASE 11·01
TO·3

2N5883, 2N5884 PNP, 2N5885, 2N5886 NPN
:-ELECTRICAL..CHARACTERISTICS (TC = 25°C unless otherwise noted)
Min

Max

60
BO

-

-

2.0
2.0

2N5883, 2N5885

-

1.0

2N58B4, 2N5886

-

1.0

2N5BB3, 2N5885

-

10

-

1.0
1.0

Symbol

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

lie - 200 mAde, IS

2N5BB3, 2N58B5
2N5884, 2N5BB6

Collector Cutoff Current

2N5BB3, 2N5885
2N5884, 2N5886

Collector Cutoff Current

=60 Vde, VSE(offl = 1.5 Vdel
(VCE = 80 Vde, VSE(offl = 1.5 Vdel
(VeE = 60 Vde, VSE(offl = 1.5 Vde, TC = 1500 el
(VeE

= 80 Vde,

VSE(offl

= 1.5 Vde,

Te

= 1500 CI

2N5884, 2N5886

10
mAde

ICSO

=60 Vde, IE = 01

2N5883, 2N5885

= 01

2N5884, 2N5886

(VC8 = 80 Vde, IE

mAde

leEX

Collector Cutoff Current

(Ves

mAde

leEO

=30 Vde,IS =01
(VeE =40 Vde, IS =01
(VeE

(VCE

Vde

VeEO(susl

=01

-

Emitter Cutoff Current

1.0

leso

mAde

(Ves = 5.0 Vde, Ie = 0
ON CHARACTERISTICS
DC Current Gain (1)

lie = 3.0 Ade, Vee
(Ie = 10 Adc, Vee

-

hFe

= 4.0 Vdel
= 4.0 Vdel

20
4.0

100

-

1.0
4.0

V8E(satl

-

2.5

Vde

VSElonl

-

1.S

Vde

fT

4.0

-

MHz

(lC = 25 Ade, VCE = 4.0 Vdel
Collector-Emitter Saturation Voltage (11

Vde

(Ie = 25 Ade, IS = 6.25 Adel
Base-Emitter Saturation Voltage (11

= 25 Ade, 18 = 6.25 Adel

Base--Emitter On Voltage (11

(Ie

-

VCE(sat)

(lC = 15 Ade, 18 = 1.5 Adel

(lC

-

35

= 10 Ade,

VeE

= 4.0 Vdel

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)

(lc

= 1.0 Ade,

Vce

Output Capacitance
(Ves = 10 Vde, Ie

= 10 Vde, f test = 1.0 MHzl
1000
SOO

2NS883, 2NS884
2NS88S, 2N5886

Small-Signal Current Gain

(Ie = 3.0 Ade, VeE

pF

Cob

= 0, f = 1.0 MHz I

-

20

hfe

= 4.0 Vde, f test =

-

1.0 kHzl

SWITCHING CHARACTERISTICS
Rise Time

07

t,

(Vec = 30 Vde, Ie = 10 Ade,

Storage Time'

1.0

ts

lSI = 182 = 1.0 Adel

Fall Time

0.8

-Indicates JEOEC Registered Data.
(1) Pulse Test' Pulse Wldth~ 300 ,",5, Duw cvc1e'5. 2.0%.

FIGURE 2.- SWITCI:IING TIME EQUIVALENT TEST CIRCUITS
TURN.

~

5.0

a:

2.0 I--

S

0.5 ~

~

-

--- -- -

, ...

5iS~

There are two limitations on the power handling ability of a

.....

...

transistor:

.de

r==

TJ' 200JC
--SECOND BREAKDOWN LIMITED
---BONDING WIRE LIMITED
----THERMAL LIMITATION @TC - 25 DC
SINGLE PULSE
Curves Apply BolDw Rated VCEO

1.0

"-

2.0

I "10

3.0

5.0 7.0

for duty cycles to 10% provided T J(pk) .;;; 200°C. T J(pkl may be

30

20

depending on conditions. Second breakdown pulse limits are valid
calculated from the data in Figure 4. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values 1t;!SS than the limitations Imposed bV second breakdown.

2N5883, 2N5885
2N5884, 2N5886

0.2

average junction temperature and second breakdown .

Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200°C; T C is variable

FF

1.0

O. I

.5001J!'''t::

2-

~~ms

i"'

t50

70

100

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 6 - TURN-OFF TIME

FIGURE 7 - CAPACITANCE

a
7.0 =
5.0 3.0 -

r--

2.a
~

S

Is
1.0

O.7
O.5

- ...

Is

TJ=25 DC =
VCC -30
Iclla- IO IB1=IB2 -

V=

200a

......

~

.........

~

Q.

W

~ 1000

I

;;;;;:;~

.......

..,~~ Cib

.......

.

~I

II

O.2

'- --

'

./

...

'\.

0.7

1.0

2.0

3.0

5.0

7.0

10

20

~

f--30

~il

'"

NI

..; 50 a

\
0.5

"' ...

..,

300
0.1

0.2

-

0.5

(PN;:;~

2N5883, 2N5884
2N5885, 2N5886 (NPNI
1.0

2.0

5.0

1-205

" "- r-..

.,..CDb

........

10

VR, REVERSE VOLTAGE (VOLTSI

IC, COLLECTOR CURRENT (AMPERES)

2~dcl

'r-.

~

~ 700

+J!

'C~b

<:;

0.3

O. I
0.3

300a

2N5883, 2N5884 (PNPI
2N5885, 2N5886 (NPN)

20

50

100

2N5883, 2N5884 PNP, 2N5885, 2N5886 NPN

PNP DEVICES
2N5883 and 2N5884

NPN DEVICES
2N5885 and 2N5886
FIGURE 8 - DC CURRENT GAIN

II]

1000
100
500 r- TJ'1500C

z

300

«
'",...
~
'"i3

SOO

z5rc'

r---..

r--550C

r--

200
100

'-'
0

~

1000
100

f=

VCE =4.0 V

z

300

~

......

~

100

~

o

70
50

~

30

~

"r--.. """- .......

30
20

2.0

-~~oc

3.0

5.0 1.0

10

20

r-......

-""";i"..

-r-.

....... ~

r--..

10
0.3

30

.......

-55°C

0

i"'1.0

"1't-.

~

........; ~

10
50

0.5 0.1

= !;:::""TJ'1500C

200

:::>

10
0.3

VCE= 4.0 V ~

0.5 0.1

2.0

1.0

3.0

5.0 1.0

20

10

30

IC. COLLELTOR CURRENT (AMPERES)

IC. COLLECTOR CURRENT (AMPERES)

FIGURE 9 - COLLECTOR SATURATION REGION
-

~

o

2.0

I

~
'"
~o

i
1. 6r- Ic • 2.b

;;

1.2

III

(7;

I

TJ' 25°C

1~!oA- I \o~

1

~

g
_

~

0.8

0.4

0

w

'"
~
o

ffi

~

\

8
>

~

20 A

~

"'o

0.01

'0.05

0.1

0.2

II III

0.5

1.0

IC'2.0A

1.6

II

TJ' 25°C

IDA

5.0 A

20 A

1.2

::

-

0.02

2.0

~

o

1l'"l

0.8

g

0.4

o

_

1"-

~

2.0

>
5.0

10

:'

\
\

8

0
0.01

0.02

IB, BASE CURRENT (AMPERES)

0.05

0.1

0.5

0.2

1.0

2.0

5.0

10

IC, COLLECTOR CURRENT (AMPERES)

FIGURE 10 - "ON" VOLTAGES
2.0

2.0

II
TJ - 25°C

1.6

g 1.2

h

0

/'"

~
w

'"
>-

V

/

i'"
5.0 7.0

10

20

30

IC, COLLECTOR CURRENT (AMPERES)

VBE@VCE-4V
0.4

o

0.3

)cE(~tl JIUBI.
0.5 0.1

1.0

V

V

10

2.0

3.0

5.0

1.0

10

Ie, COLLECTOR CURRENT (AMPERES)

1-206

V

;:::.

0

Vf~VfE, ',\V,

0.5 0.7

'I

0

0

>
:>

A

TJ' 25°C
1.6

20

30

2N5974,2N5975,2N5976

®

MOTOROLA

PNP SILICON PLASTIC POWER TRANSISTORS

5 AMPERE
POWER TRANSISTORS

designed for use in general purpose amplifier and switching
applications.

PNP SILICON
40-60-80 VOLTS
75 WATTS

•

DC Current Gain Specified to 5 Amperes
hFE = 20·120@IC= 2.5Adc
= 7.0 (Min) @ IC = 5.0 Adc

•

Coliector·E'mitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5974
= 60 Vdc (Min) - 2N5975
= 80 Vdc (Min) - 2N5976

•

High Current Gain - Bandwidth Product fT = 2.0 MHz (Min) @ Ie = 500 mAde

•

Complements to NPN Transistors 2N5977. 2N5978. 2N5979

'MAXIMUM RATINGS
2N5975

2N5976

Unit

VeEO

40

60

80

Vdc

Collector-Base Voltage

VeB

60

80

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Ie

5.0
10

Adc

Base Current

18

2.0

Total Power Dissipation

PD

Rating

Symbol

Collector-Emitter Voltage

Collector Current

Continuous

2N5974

Peak

@Te= 25°C

Derate above 2SoC
Operating and Storage Junctior
Temperature Range

Adc

STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

Watts
75
0.60

-

TJ.Tstg

-65 to +150

w/oe

-

°e

NOTES:
1. DIM "0" UNCONTROLLED IN ZONE "H"
2. DIM "F" OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEADS WITHIN 0.005" RAD OFTRUE
POSITION ITP) AT MAXIMUM MATERIAL
CONDITION .

THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Case
• Indicates JEDEC Registered Data for 2N5974 Series.

FIGURE 1 - POWER DERATING

DIM

0
~

~

A
B
C

"- ........

0

"'-

0

0

o
o

20

40

60

80

"" ""
100

0
F
G
H
J
K
M
Q

'"

120

R
U

V

"I'..
140

160

MILLIMETERS
MAX
MIN

INCHES
MAX
MIN

16.13 16.38
12.57 12.83
3.18
3.43
1.09 1.24
3.76
3.51
4.22 BSe
2.92
2.67
0.813 0.B64
15.11 16.38
90 TYP
4.70 4.95
1.91
2.16
6.48
6.22
2.03

0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSe
0.105 0.115
0.032 0.034
0.595 0.645
9' TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080

CASE 90·05
TO-127

TC. CASE TEMPERATURE I'C)

1-207

2N5974, 2N5975, 2N5976

*ELECTRICAL CHARACTERISTICS (T C = 250 C unless otherwise noted)

I

Min

Max

40
60
80

-

--'

1.0
1.0
1.0

2N5974
2N5975
2N5976
2N5974

-

100
100
100
1.0

2N5975

-

1.0

2N5976

-

1.0

-

1.0

40
20
7.0

120

-

0.6
1.7

-

2.5

-

1.4

2.0

-

-

300

20

-

Characteristic

-

SVmbol

Unit

OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (1)
(lC = 100 mAde, IB = 0)

Vde

VCEO(sus)
2N5974
2N5975
2N5976

Collector Cutoff Current
(VCE = 20 Vde, IB = 0)
(VCE = 30 Vde,IB = 0)
(VCE = 40 Vde, IB = 0)

mAde

ICEO
2N5974
2N5975
2N5976

Collector Cutoff Current
(VeE = 60 Vde, VEB(off) = 1.5 Vde)
(VCE = 80 Vde, VEB(off) = 1.5 Vde)
(VCE = 100 Vde, VEB(off) = 1.5 Vde)
IVCE = 40 Vde, VEB(off) = 1.5 Vde,
TC = 1250 C)
IVCE = 60 Vde, VEB(ofl) = 1.5 Vde,
TC = 125°C)
IVCE = 80 Vde, VEBloff) = 1.5 Vde,
TC= 125°C)

ICEX

Emitter Cutoff Current
IVBE = 5.0 Vde, IC = 0)

"Ade

mAde

mAde

lEBO

ON CHARACTERISTICS
DC Current Gain
IIc = 0.5 Ade, VCE = 2.0 Vde)
IIc = 2.5 Ade, VCE = 2.0 Vde)
IIc = 5.0 Ade, VCE = 2.0 Vde)

-

hFE

Collector·Emitter Saturation Voltage
IIc = 2.5 Ade, IB = 250 mAde)
IIc = 5.0 Ade, IB = 750 mAde)

VCElsatl

Base-Emitter Saturation Voltage

VBE{sat)

Vde

Vde

(lC = 5.0 Ade, IB = 750 mAde)
Base·Emitter On Voltage
IIc = 2.5 Ade, VCE = 2.0 Vde)

-

Vde

VBE{on)

DYNAMIC CHARACTERISTICS
Current·Gain - Bandwidth Product 12)
(lc = 500 mAde, VCE = 10 Vde, f tast = 1.0 MHz)

IT

Output Capacitance
(VCB = 10 Vde, IE = 0, I = 0.1 MHz)

Cob

Small,Signal Current Gain
(lC = 0.5 Ade, VCE = 4.0 Vde, f = 1.0 kHz)

hIe

MHz

pI'

-

·'ndicates JEDEC Registered Oata
(1) Pulse Test: Pulse WidthS-300 IJs. Duty CycleS2.0%.
(2) fT

= I hfe

I- f te.,

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

FIGURE 3 - TURN-ON TIME

vcc

2.0
TJ=250 e ~
Vee-30V
IcJlB -10 1=

·30V

1.0

O.7
O.5

SCOPE

RB

,....

! o. 3
w

'"' 02
;::

51

I'.

.;-40 V

RS and RC VARIED TO OBTAIN DESIRED CURRENT lEVElS
01 MUST BE FAST RECOVERY TYPE. eg.
MB05300 USeD ABOVE 18"'" 100 mA
MSD6100 useD BElOW 18 ... 100 mA

td 4!1 VBE(off) ~ 5.0 V

0.07
0.05
0.03
0.02
0.05

_I---'

~

O. 1

tr.tf~IOns

DUTY CYCLE'" 1.0%

-d:
11 II

0.1

0.2

0.3

0.5

1.0

Ie. COLLECTOR CURRENT (AMP)

1-208

2.0

3.0

5.0

2N5974,2N5975,2N5976

II.

FIGURE 4 - THERMAL RESPONSE
1.0

S
N

... :::;
ffi~
in'"

-"""

o. 31== (:::0.2

~~ O. 2
I--- 1-0.1
... w

",-

w'-'

== ~

t:::'"

I--::

o. 1l::= 1::0.05

8~ 0.0 7r==

0.02

~o.o 5

tt

- fJ1Jl

O. ~ f=O -0.5
O.

9JC(max): 1.67 oCM

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT.,

tl~

~~

TJ(pk)- TC: P(pk)9JCh)

DUTY- CYCLE, D : .,/12

~"
-= ~ 0.03~
I--- +--0.01

t--Single PuiS.

~ 0.0 2

I-

I

0.0 1
0.01

11111

I

0.02 0.03

0.05

0.1

0.2

0.3

1.0

0.5

I

10
2.0 3.0
5.0
I. TIME OR PULSE WIDTH (ms)

I II

I 111111

so

30

20

I

100

I I I
200 300

I I III
500

1000

FIGURE 5 - ACTIVE·REGION SAfE OPERATING AREA
0

,. 15O"C. TJ(pk) may be
calculated from the data In Figure 4. At high case temperatures,
thermal limitations Will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

o. 51-t-- Curves Apply Below Rated VCEO
o. 2

average junction temperature and second breakdown.

Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; i.e .. the transistor
must not be subjected to greater dissipation than the curves indicate.

\I I

100

veE. COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 6 - TURN·OFF TIME
5.0
3.

o

2.0

I"1.0
~
w

O. 7
0.5

i=

0.3

,.

r- :::::

300

Is

.."

~ 200

~

;:;
If

0.2

O. 1
0.07
0.05
0.05

FIGURE 7 - CAPACITANCE
500

TJ: 25°C tVCC:30LCIC/18 =10
181:182 -~

~

r- r-

"

ti

..; 100

------

TJ = 25°C

-r-r--..
........

r.....r--.

Cib

~

t:.....t--..

70
0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

IC, COLLECTOR CURRENT (AMP)

50
O.S

1.0

2.0

3.0

5.0

10

VR, REVERSE VOLTAGE (VOPS)

1-209

20

30

50

2N5977,2N5978,2N5979
MOTOROLA

NPN SILICON PLASTIC POWER TRANSISTORS

5AMPERE
POWER TRANSISTORS

designed for use' in general purpose amplifier and switching
applications.

NPN SILICON
•

DC Current Gain Specified to 5 Amperes
hFE = 20·120@ IC = 2.5 Adc
= 7.0 (Min) @ IC = 5.0 Adc

40-60·80 VOLTS
75 WATTS

• Coliector·Emitter Sustaining Voltage VCEO{sus) = 40 Vdc (Min) - 2N5977
= 60 Vdc (Min) - 2N5978
= 80 Vdc (Min) - 2N5979
•

High Current Gain - Bandwidth Product
=2.0 MHz (Min) @ IC =500 mAdc

tr

• Complement to PNP Transistors 2N5974,2N5975,2N5976

*MAXIMUM RATINGS
2N5977

2N5978

2N5979

VCEO

40

60

60

Vdc

Collector· Base Voltage

VCB

60

80

100

'Vdc

Emitter·Base Voltage

VEB

5,0

Vdc

IC

5.0
10

Adc

Base Current

iB

2.0

Total Power Dissipation

Po

Rating

Symbol

Collector-Emitter Voltage

Collector Current - Con.tinuous
Peak

Adc

Watts

@TC=250C

76
0.60

Derate above 25°C
Operating and Storage Junction TJ,T stg

°c

-65 to +150

Characteristic
Thermal Resistance, Junction to Case
·'ndlcates JEDEC Registered Data

FIGURE 1 - POWER DERATING

"""'-

0

~

DIM
A
B
C

"

0
F

"'-

0

G
H

"I"

J
K
M

n

40

60

80

100

TC. CASE TEMPERATURE (DC)

R

~

0

20

r::-:::-=

11:
c'

=='T'

STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

NOTES:
1. DIM "0" UNCONTROLLED IN ZONE "H"
2. DIM "F" OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEADS WITHIN 0.005" RAO OF TRUE
POSITION (TP) AT MAXIMUM MATERIAL
CONDITION.

THERMAL CHARACTERISTICS

-

,

W/oC

Temperature Range

0

Unit

120

U
V

'"

140

1-210

160

MILLIMETERS
MAX
MIN

INCHES
MIN
MAX

16.13 16.38
12.57 1.2.83
3.18
3.43
1.09 1.24
3.51
3.76
4.22 BSC
2.67
2.92
0.813 0.864
15.11 16.38
90 TYP
4.70 4.95
1.91
2.16
6.48
6.22
2.03

0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166BSC
0.105 0.115
0.032 0.034
0.595 0.645
90 TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080

CASE 90·05
TO-127

2N5977,2N5978,2N5979

*ELECTRICAL CHARACTERISTICS (Tc = 25°C unle.. otherwi.. noted)
Characteristic

Svmbol

Min

Mox

4D
SO
SO

-

Unit

OFF CHARACTERISTICS
Collector-EmitterSustaining Voltage (1)
(lC = l00mAde.IB = D)

Collector Cutoff Current
(VCE = 2D Vde.IB =D)
(VCE = 3D Vde.IS = D)
(VCE = 4D Vde.IS = D)

Vde

VCEO(sus)
2N5977
2N5978
2N5979

mAde

ICEO
2N5977
2N5978
2N5979

Collector Cutoff Currant
(VCE = SO Vde. VEB(off) = 1.5 Vde)
(VCE = SO Vde. VEB(ol!) = 1.5 Vde)

-

1.0
1.0
1.0

-

ICEX

(VCE = 100 Vde. VEB(off) = 1.5 Vdel
(VCE = 4D Vde. VEB(off) = 1.5 Vde.
TC = 125°C)
(VCE =60 Vde. VES(off) = 1.5 Vde.
TC = 125°C)
(VCE = 80 Vdc. VEB(offi = 1.5 Vde.
TC = 1250 CI

-

2N5977
2N5978
2N5979
2N5977

-

100
100
100
1.0

2N5978

-

1.0

2N5979

-

1.0

-

1.0

40
20
7.0

120

-

0.6
1.7

-

2.5

-

1.4

2.0

-

-

200

2D

-

-

Emitter Cutoff Current

"Ade

mAde

mAde

lEBO

(VSE = 5.0 Vde. IC = 01

ON CHARACTERISTICS
DC Current Gain
(lc = 0.5 Adc. VCE = 2.0 Vdcl
(lc = 2.5 Adc. VCE = 2.0 Vdcl
(lc = 5.0 Ade. VCE = 2.0 Vdel

-

hFE

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Vde

VSE(so"

(lC = 5.0 Adc. IS = 750 mAdei

Base-Emitter On Voltage

Vde

VCE( .."

(lC = 2.5 Adc. IS = 250 mAdei
(lC = 5.0 Ade. IB = 750 mAdei

-

Vde

VBE(oni

(lc = 2.5 Adc. VCE = 2.0 Vdel

DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
(Ie = 500 mAde. VCE = 10 Vdc. 'test = 1.0 MHzI

IT

Output Capacitance

Cob

(VCS = 10 Vdc. Ie =

D.'

MHz
pF

= 0.1 MHz)

Small-8ignal Current Gain

-

hie

(Ie = 0.5 Ade. VCE = 4.0 Vde.' = 1.0 kHz)

-Indicates JEDEC Registered Data
(1) Pulse Test: Pulse WidthS-300 ,",S, Duty Cycle$2.0%.
(2) fT

= Ihfe I- f ta• t

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

FIGURE 3 - TURN·ON TIME
2.0

VCC

250~

T] =
VCC - 30 V
ICliB= 10

+30 V
1. 0

A
+~]

0.7

RC

--1--,

0.5
SCOPE

-9.0 V

~r

0.2

........

>=
51

=

::--,.

~ 0.3
~

::::

r-

~

.......

0.1

td@VBE(olf)"5.0V

0.07

tr,tf~tOns

DUTY CYCLE = 1.0%

-4V

0.05

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE. ego
MBD5300 USED ABOVE IB ~IOO rnA
MSD6100 USED BELOW IB ~IOO rnA

::::

0.03
0.02
0.05

0.1

0.2

0.3

0.5

1.0

IC. COLLECTOR CURRENT (AMPI

1-211

2.0

3.0

5.0

2N5977,2N5978,2N5979

FIGURE 4 - THERMAL RESPONSE
1.0

ffi
N

0.7 f==0=0.5
O.5

t-:;

ffi~ 0.3

u;'"

~~ 0.2
",-

t- W

--

:= 1=01.2
-

~

~O.I

~ ~Io'"

w'"'
~:i o.1 =1=0.05
~ ~ 0.07

~ ~ 0.05

w ...

==

~nn
1

iI""

tl~

rO.02

TJ(pk) - TC = P(pk)9JC(I)

~Singl. Pulse

~O.02

II

I

0.0 I
0.01

PULSE TRAIN SHOWN
READ TIME AT II

DUTY CYCLE. 0 = 11/12

:g! 0.03 f---;;;.. rO.OI
t-

9JC(max) = I.B70CIW

oCURVES APPLY FOR POWER

0.02 0.03

0.05

II II II 11111

11111
0.1

0.2

0.3

0.5

1.0

2.0 3.0' 5.0
10
1. TIME OR PULSE WIDTH (m.)

30

20

50

II II II 1111

100

200

300

500

I 000

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
10

....

ii: 5. 0

There are two limitations on the power handling ability of a
.transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipf;ltion than the curves indicate.
The data of Figure 5 is based-on TJ(pk) ~ 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles t!' 10% provided T J(pk)E;; 1500C. T J(pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

.....

'"

5 3. 0'--- TJ=1500e
t-

O.5ms

SECOND BREAKDOWN LIMITED ~dC
~ 2. o
'"a :-~::: ~~~~~NAGL~II~~T~~II~~~TC = 250e\ ' \
I. 0
'"

\

1.0 ms

\'\

5.0ms

0

~
8

~

o. 5 o. 3
o. 2
O. 1
5.0

r--

Curves Apply BelDw Rated VCEO

7.0

2N59i7
2N5978
2N5979
20

10

+t
30

I

50

70

100

VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 7 - CAPACITANCE

FIGURE 6 - TURN·OFF TIME
5.0
Vee = 3D V

2.0
.

~

ts

T1

200

TJ 250le -

leliB = 10
IBI = IB2

I-

-

r- t-

1.0

j

O.7
~ O.5

;::

~

l

I-

-TJ' 25°C

3.0

300

0

"

o.3

"

r-......

.li

O.2

....

Cob

0.1

1.0
0.5
0.2 0.3
Ie. COLLECTOR CURRENT (AMP)

2.0

3.0

5.0

1-212

30
0.5

-

i-

0

O. I

0.07
0.05
0.05

r-t..
'"'-j...

0

1.0

I-f-

2.0 3.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)

t=
20

30

50

®

2N5986,2N5987,2N5988 PNP
2N5989,2N5990,2N5991 NPN

MOTOROLA

12 AMPERE

HIGH POWER PLASTIC
COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS
COMPLEMENTARY SILICON

· .. designed for use in general·purpose amplifier and switching circuits.

40, 50, 80 VOLTS
100 WATTS

• Collector-Base Voltage - VCBO = 60 Vdc - 2N59B6, 2N5989
= 80 Vdc - 2N5987, 2N5990
= 100 Vdc - 2N5988, 2N5991
• Collector-Emitter Voltage - VCEO = 40 Vdc - 2N5986, 2N5989
= 60 Vdc - 2N5987, 2N5990
= 80 Vdc - 2N5988, 2N5991
• DC Current Gain hFE = 20-120@IC=6.OAdc
= 7.0 (Min) @ IC = 12 Ade
• Collector-Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 6.0 Adc

'MAXIMUM RATINGS
Rating

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous

Symbol

2N5986
2N5989

2N5987
2N5990

2N5988
2N5991

Unit

Vea

60

aD

100

Vdc

VeEO

40

60

SO

Vdc

VES

5.0

Vdc

Ie

12
20

Adc

Peak

Base Current
Total Power Dissipation
Derate above 25°C

@

T C ::: 25°C

Operating and Storage Junction
Temperature Range

la

4.0

Adc

Po

100

Watts

O.S

wloe

TJ. T5t9

-65 to +150

°e

STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIM "0" UNCONTROLLED IN ZONE "W'
2. DIM "F" DlA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
4. LEADS WITHIN 0.005" RAD OF TRUE
POSITION (TP) AT MAXIMUM MATERIAL
CONDITION.

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
·'ndicates JEOeC Registered Data

FIGURE 1 - POWER DERATING

DIM
100

'"

A
B
C

i'.

"

0

'" "-"-

0
F

G
H

J
K

:'"

M
Q

0

~

0

20

60

80

100

120

R
U

!'...

140

V

MILLIMETERS
MAX
MIN

INCHES
MIN
MAX

16.13 16.38
12.57 12.83
3.43
3.18
1.09
1.24
3.51
3.76
4.22 BSC
2.67
2.92
0.813 0.864
15.11 16.38
90 TYP
4.70 4.95
1.91
2.16
6.22
6.48
2.03

0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSC
0.105 0.115
0.032 0.034
0.595 0.645
90 TYP
0.185 0.195
0.075 0.OB5
0.245 0.255
O.OBO

160

CASE 90-05
TO-127

Te. CASE TEMPERATURE (OCI

1-213

2N5986, 2N5987, 2N5988 PNP / 2N5989, 2N5990, 2N5991 NPN

*ELECTRICAL CHARACTERISTICS ITC = 25°C unl... otherwise notedl
Characteristic

Symbol

Min

Max

40

60

-

80

-

-

2.0
2.0
2.0

Unit

OFF CHARACTERISTICS
Co"ector~Emitter

lic

Sustaining Voltage

Vdc

SVCEOlsu,1

=0.2 Adc, 18 = 01

2N5986, 2N5989
2N5987, 2N5990
2N59B8, 2N5991

Collector Cutoff Current

mAde

ICEO

IVCE = 20 Vdc, la = 01
IVCE = 30 Vdc, IS = 01
IVCE = 40 Vdc, IS = 01

2N5986,2N5989
2N5987, 2N5990
2N59B8, 2N5991

Collector Cutoff Current
IVCE = 60 Vdc, VaEloffl = 1.5 Vdcl
IVCE = 80 Vdc, VaE loffl = 1.5 Vdcl
IVCE = 100 Vdc, VaEloffl = 1.5 Vdcl
IVCE = 40 Vdc, VaEloll1 = 1.5 Vdc, TC = 1250 CI
IVCE = 60 Vdc, VBElo!fl = 1.5 Vdc, TC = 1250 CI
IVCE = SO Vdc, VaEloffl =·1.5 Vdc, TC = 1250 CI

-

-

"Adc

ICEX

-

2N 5986, 2N5989
2N5987,2N5990
2N5988,2N5991
2N5986,2N5989
2N5987,2N5990
2N5988,2N5991'

-

200
200
200
2.0
2.0
2.0

-

1.0

40
20
7.0

120

-

0.6
1.1

-

2.5

-

1.4

2.0

-

-

-

500
300

20

-

-

Emitter Cutoff Current
IVaE = 5.0 Vdc, IC = 01

mAde

mAde

IESO

ON CHARACTERISTICS
DC Current Gain

-

hFE

lic = 1.5 Adc, VCE = 2.0 Vdcl
lic = 6.0 Adc, VCE = 2.0 Vdcl
lic = 12 Adc, VCE = 2.0 Vdcl
Collector-Emitter Saturation Voltage

Vdc

VCElsatl

lic = 6.0 Adc, 18 = 0.6 Adcl
lic = 12 Adc, 18 = 1.8 Adcl

Base--Emitter Saturation Voltage

Vdc

VBElsatl

lic = 12 Adc, IB = 1.8 Adcl

Base-Emitter On Voltage

Vdc

VBElonl

lic = 6.0 Adc, VCE = 2.0 Vdcl

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

MHz

'T

lic = 0.5 Adc, VCE = 10 Vdc, I test = 1.0 MHzl

Output Capacitance
IVca = 10 Vdc, IE = 0, I = 1.0 MHzl

pF

Cob
2N5986 thru 2N5988
2N5989 thru 2N5991

Small..signal Current Gain
lic = 2.0 Adc, VCE = 4.0 Vdc, I = 1.0 kHz)

-

hie

• Indicates JEDEC Registered Data.
(1) fT=lhfel.ftest

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - TURN-ON TIME

2.0

VCC
+30 V

J)jJJ

1.0

= =

IC=IOI~=

0.5

SCOPE

RB

:!
w
51

0,

.,
::E

0.2

r-...

.......

.>

0.1

tr.tf~lOns

DUTY CYCLE' 1.0%
RS and

Re

-4 V
VARIED TO OBTAIN DESIRED CURRENT LEVElS

tr

--

::-:::~

td I! VBElo!ll ~ 5.0 V

0.05
2N598612N5988

0, MUST BE FAST RECOVERY TYPE. eg.
MBD5300 USED ABOVE IB ",,100 mA
MS06100 USEO BELOW lB ~100 mA

0.Q2

f-

0.2

For PNP test circuit reverse diode and voltage polarities.

-1- i i 2~"/W991
0_5

1.0

...
2.0

5.0

IC, COLLECTOR CURRENT lAMP)

1-214

=

TJ-250 C - -

10

20

2N5986, 2N5987, 2N5988 PNP / 2N5989, 2N5990, 2N5991 NPN

FIGURE 4 - THERMAL RESPONSE
1.0
w

~
fa
'"~~
~~

...wOil!

i

0.7

0=0.5

0.5

0.3

---

0.2

0.2

-

> <; 0.05 0.02

r- i>'

.,....,.., ~

0.02

'!'Ilfl
1 .

t.:j

.01
I I

rnWii

"'2
0.0 1
0.01

~~

-:: ;::::: ~~

0.1
O. 1
0.05
0.07

0.03

~

r-.............

0.02

0.05

9Jc(tl = ,(.1 9JC
9JC = 1.250CIW Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT'1
TJ(pki - TC = P(pkl 9JC(.I

DUTY CYCLE. 0 = '1/12
I
20

L I 11J L

0.1

0.2

0.5

2.0

1.0

5.0

10

I

I

I I I III
50
100

L

. L 1 .1 I I

200

500

1000

'. TIME (msl

FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
0
 ~l

. . l'"

500,...

\

1111

SECOND BREAKDOWN LIMITED
:: 1.0
- BONDING WIRE LIMITED
f-8
- - - - - - - THERMAL LlMITATlDN@TC=250C

5.0ms

\\

}} 0.5

2N5986.2N5989
2N5987.2N5990

I I I 2N5988.2N5991

O. 2
1.0

2.0

5.0

10

-l.

20

50

Safe operating area curves indicate Ie - VeE limits of the tranSistor
that must be observed for reliable operation; Le., the transistor must
not be subjected to greater dissipation than the curves mdicate.
The data of Figure 5 is based on T J(pkl = 150°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pkl '" 1500C T J(pkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by seoond breakdown.

100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 6 - TURN·OFF TIME

FIGURE 7 - CAPACITANCE

5.0

1000
VCC=JOV IB1=182 IC = 10 18 TJ = 25°C

"

2.0

~

--

-I-"

~~

1.0

~

w

""-=...

TJ=250C700

G: 500

.!!

..,zw

~ JOO
U

0.5

-t.
1-

0.2
0.1

-

1::---1=

0.05
0.2

--

-

..,~

1.0

2.0

.......

Cib

...::::: i:::- t:--~

..... .....

.....

t"-,t

...........

..; 200

Cob

- - - - 2N598612N5988
- - - - - 2N5989/2N5991

2N598612N5988
-----2N5989/2N5991
0.5

"
....

5.0

10

20

100
0.5

lJJJI

1.0

Tr

2.0

5.0

10

VR. REVERSE VOLTAGE (VOLTSI

IC. COLLECTOR CURRENT (AMPI

1-215

,.;>-.

.......

~

....
20

50

2N5986, 2N5987, 2N5988 PNP / 2NS989, 2N5990, 2N5991 NPN

NPN

I

PNP
2N5986 thru 2N5988

2N5989 thru 2N5991

FIGURE 8 - DC CURRENT GAIN
300

1000

III

200
z 150

II

I"-r--

;;:

II

SOD

II

TJ~'5(JOC

VCE=2.0V

z

~100
~

~ 10

~50C

.., 50
c

~

H-

r--r-.

-55°C
3D

......
....... ~

200

i:j
'"=>

100

......

1.0

2.0

3.0

25~ ~

0

5.0

-r-.

0

,

0.5

2.0

0.5

0.2

2

w

'"
~
o

6.0 A

12A

IC =3.0 A

....

0.4

-

r-

0
30

::>

1.2

~

0.8

~
ii

g

-

W

_

..,o

\

W
'-'

>
50

100

200

300

500

1000

0
3D

2000 3000

50 70

100

300

500

2000 3000

1000

FIGURE 10 - "ON" VOLTAGES
2.0
TJ = 25°C
TJ = 25°C

I~

1.6

~

1.6

~01.2

II

o
21.2

~V

w

VBElsa!)@llefIB-l0
0.8

~

~I---

1/

w

~

~

g

IJc~lsa!)~c~

I
0.3

0.5

1.0

2.0

3.0

F

~BEiO~)I@I~CE' 2;0 VI

0.4

!'

I I'"
VICflsat) @ Ic/IB~

I II

"'"
5.0

~;;;-

VBElsat) Ii!Ilc/IB = 10

0.8

,;

VBElon)@VCp2.0V
0.4

~

2

::!=I=F-

,;

0.2

200

lB. BASE CURRENT ImA)

2.0

o

--

\

0.4

lB. BASE CURRENT ImA)

g

TJ = 25°C

~

2

'"~

12A

6.0 A

1.6

o

'-

~ O.B
.:
o

'-'

2

'"

~

>

20

10

"T

III I

~
o

TJ = 25°C

w

~ t.2

~_

5.0

IC. COLLECTOR CURRENT lAMP)

I

IC =3.0 A

1.6

2.0

1.0

FIGURE 9 - COLLECTOR SATURATION REGION
_ 2.0

III

~

o

~

......

10

20

10

IC. COLLECTOR CURRENT lAMP)

_

VCe-2.0V

-55°C

~
~

0.3

TJ 150°f

..,

20
15
0.2

~

...z

..,=>

~

300

10

20

IC. COLLECTOR CURRENT lAMP)

o

0.2

0.3

0.5

1.0

2.0

3.0

5.0

IC. COLLECTOR CURRENT lAMP)

1-216

10

20

®

2N6034, 2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN

MOTOROLA

l1li

PLASTIC DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS

DARLINGTON
4-AMPERE

· .. designed for general·purpose amplifier and low·speed switching
applications.
•

High DC Current Gain hFE = 2000 (Typ) @ IC = 2.0 Adc

•

Collector· Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 40 Vdc (Min) - 2N6034, 2N6037
= 60 Vdc (Min) - 2N6035, 2N6038
= 80 Vdc (Min) - 2N6036, 2N6039

•

Forward Biased Second Breakdown Current Capability
ISlb = 1.5 Adc @25 Vdc

•

Monolithic Construction with Built·ln Base·Emitter
Resistors to Limit Leakage Multiplication

•

Space·Saving High Performance·to·Cost Ratio
TO·126 Plastic Package

COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS
40 WATTS

*MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

40

VCEO

Collector-Base Voltage

VCB

Emitter-Base Voltage

VEB
IC

Collector Current

2N6034 2N6035 2N6036
2N6037 2N6036 2N6039

Continuous

.

40

.
.
.

Peak

Base Current

18

4.0-

Ade

8.0100-

TA - 25°C

Po

1.5-0.012-

TJ,T stg

-

Vde
Vde
Vde

40-0.32-

Operating and Storage Junction

Unit

60
80
.5.0_

Po

Derate above 25°C
@

80

2SoC

Total Power Dissipation @TC

Total Power Dissipation
Derate above 25°C

60

-65 to + 1 5 0 -

mAde
Watts
wf'c
Watts
wf'c

K

°c

Temperature Range
THERMAL CHARACTERISTICS
Characteristic

STYLE 1
PIN 1. EMITIER
2. COLLECTOR
3.8ASE

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

NOTE'
1. LEADS, TRUE POSITIONED
WITHIN 0.25 mm 10.0101 OIA.
TO OIM. "A" & "8" AT
MAXIMUM MATERIAL
CONOITION.

·Indicates JEDEC Registered Data.
FIGURE 1 - POWER DERATING

TA TC

4.0 40

"'"

0

MIlliMETERS

~

l'.

.......

0

-.... r--

0

0

20

40

60

-.;:

MIN

MAX

INCHES
MIN
MAX

A
8
C

10.80
7.49
2.41
0.51
2.92
2.31
1.27
0.38
15.11

11.05
7.75
2.67
0.66
3.18
2.46
2.41
0.64
16.64

0.425
0.295
0.095
0.020
0.115
0.091
0.050
0.015
0.595

D

i'-!C

F
G

"" '" i'..

~

80

DIM

100,

H
J
K

""" r-:: ~
120

140

M
Q

R
160

S
U
V

30 TYP

3.76
1.14
0.64
3.68
1.02

4.01
1.40
0.89
3.94

30 TYP

0.148
0.045
0.025
0.145
0.040

CASE 77.()4
T()'126

T. TEMPERATURE (DC)

1-217

0.435
0.305
0.105
0.026
0.125
0.097
0.095
0.025
0.655
0.158
0.055
0.035
0.155

2N6034,2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN

-

*E LECTRICAL CHARACTER ISTICS IT c = 25 0 C unless otherw"e noted)

I

Characteristic

Symbol

Min

Max

40
60
SO

-

-

100
100
100

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage
(lC

= 100 mAde,

IS

= 01

COllector-Cutoff Current
(VCE
(VCE
(VCE

= 40 Vde, IB = 01
= 60 Vdc,lB = 01
= 80 Vde, IS = 01

Collector Cutoff Current
(VCE = 40 Vde, VSE(off) = 1.5 Vdel
(VCE = 60 Vde, VSE(olll = 1,5 Vde)
(VeE = SO Vde, VSEloll) = 1,5 Vde)
(VCE = 40 Vde, VSE(olll = 1.5 Vde
TC= 125°C)
(VCE = 60 Vde, VSE(olll = 1,5 Vde
TC = 1250 CI
(VCE = SO Vde, VSE(off) = 1.5 Vde
TC = 125°C)

Vde

VCEOlsus)
2N6034, 2N6037
2N6035, 2N6038
2N6036, 2N6039
ICED
2N6034, 2N6037
2N6035, 2N603S
2N6036, 2N6039

ICEX

"A

2N6034, 2N6037
2N6035, 2N6038
2N6036, 2N6039

-

-

100
100
100

2N6034, 2N6037

-

500

2N6035, 2N603S

-

500

-

500

-

0.5
0.5
0.5

-

2N6036, 2N6039

Collector Cutoff Current

ICSO

(VCS = 40 Vde, IE = 0)
(VCS =60 Vde,IE = 0}
(VCS = 80 Vde,IE = 01

mAde

2N6034, 2N6037
2N6035, 2N6038
2N6036, 2N6039

Emitter Cutoff Current
(VSE = 5.0 Vde,lc = 01
ON CHARACTERISTICS

lEBO

DC Current Gain

2.0

hFE

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

-

-

2.0
3.0

VSE(satJ

-

4.0

Vde

VSE(on)

-

2.S

Vde

\hle \

25

-

-

200

-

1~

(lc = 2.0 Ade, IS = S.O mAdel
(lC = 4.0 Ade, IS = 40 mAde)

=4.0 Ade,IS = 40 mAde)

-

15,000
Vde

VeE(sa,1

Base-Emitter Saturation Voltage

mAde

-

500
750
100

(Ie = 0.5 Ade, VCE = 3.0 Vde)
(IC = 2.0 Ade, VCE = 3.0 Vdel
(lc = 4.0 Ade, VCE = 3.0 Vdel

(lc

"A

-

(lC = 2.0 Ade, VCE = 3.0 Vde)
OYNAMIC CHARACTERISTICS

, Small-Signal Current-Gain

-

(lC = 0.75 Ade, VCE = 10 Vde, I = 1.0 MHz)

Output Capacitance

pF

Cob

(VCS = 10 Vde, 'E =0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036
2N6037, 2N6038, 2N6039

*Indlcates JEDEC Registered Data,
FIGURE

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

3 - SWITCHING TIMES

4.0,.

Vee

Vcc=30V
IC/IB =250 IBI = IB2
TJ = 25 0 C

-30V
R8 & Re VARIED TO OBTAIN DESIRED CURRENT LEVElS
D1. MUST BE FAST RECOVERY TYPES, e.g.,
MBD5300 USED ABOVE IS "" 100 rnA.
MSD6100 USED BELOWIS "" 100 rnA

RC

·~f;O~--1

I

tr.tf<10ns
DUTY CYCLE = 1.0%

~ ~ I\..

.3
w 1.0

'";:::-- O.8

O.6

2...

for td and t r• 01 is disconnected
and V2 '" 0, AB and AC are varied
to obtain desired test cUrrlNltS.

O.

For NPNtestcircuit,reversediode,
polarities and input pulses.

f..>- r-

"

...

1- ~

.PPro,--[J----.0: __________
v,

2, 0

SCOPE

tl~

I\.

--

......

......--

..........

41?

0, 2
0.04

---PNP
---NPN
0.06

0.1

...........
0.2

~

.:?'

.......

tr

!--

.... ,

........ k
0.4

....
0.6

"
r--

r-

7'

r@J:r=t
1.0

IC, COLLECTOR CURRENT (AMP)

1-218

f:::: r-- L......

l't

......

,-

;-

2.0

4.0

2N6034, 2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN

FIGURE 4 - THERMAL RESPONSE

1.0

~

50

~

0.3

~~

02

~

0-05

07

«

02

-

"'~

~~ 0.1

r'"

*

~~O.01

z

~

r

-.......--

-

0.1
0.05
0.01

..0.03 ........
0.05

uJCII)" ,II) (lJC
uJC " 3.12 oCIW Max

-;:::P

o CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT!j

1fLSL
~:~~

SINGLE PULSE

TC - Plpkl OJCltI

TJlpk)

DUTY CYCLE. 0 !Jil2

0.0 2
0.0 1
0.01

II II
0.02 003

005

I

111111

0.1

0.2

0.3

05

2.0

10

3.0

5.0

10

20

30

100

50

200

300

500

1000

I. TIME 1m,)
ACTIVE·REGION SAFE·OPERATING AREA
FIGURE 6 - 2N6037 2N6038.2N6039

FIGURE 5 - 2N6034. 2N6035. 2N6036
1.0

10

7.0
"- 5.0

~

t-

z

.........

3.0

de

~ 2.0

i3

~

t;

u

.....

....

........

.....

" ......
" '\.

~
TJ"150oC
1.0
- - - BONDING WIRE LIMITED
0 7 - - - THERMALLY LIMITED
@TC" 25°C (SINGLE PULSE)
5
- - - SECOND BREAKDOWN LIMITED
\
o.3
2N6036
o.2
2NS035-+ i--"

o. 1

5.0

7.0
5.0

~
t-

3.0

ffi
~

2.0

i3

~

=

0.7
0.5

8

100",·-

"

...... 5.0~~ ~1.0-;;:'"

d~"", .....

2N6034-'
20
30
50
10
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1'\

70

O. 1
5.0

100

.... .....

,

~
TJ" 150°C
- - - BONDING WIRE LIMITED
- - - THERMALLY LIMITED
@TC"250C(SINGLEPULSE)
- - SECOND BREAKDOWN LIMITED \

0.2

I,

......

I

E 0.3

\

7.0

1.0

a::

,

j 0:

8

1L

lOOps::.. .....

5.0ms""- ;;-;;;-1.0ms"

1"'\

,
1'\

I'\.

",'

!"'

2NS039
2NS038
I"2N6037 ~
30
50
70
10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

\

7.0

1'\
100

FIGURE 7 - CAPACITANCE
200

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for rei iable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) ~ 150°C; TC is
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) <150°C. TJ(pk)
may be calculated from the data in Figure 4. At high case temperatures. thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.

I IIII

TC = ~J&c
~ 100

~
z 70

«
t-

<3 50

~
u

u'

30

r-...

-

- ~'"Cob

L-

... . .

-~;t

20
---PNP
-1111-NrN
10
0.04 0.06 0.1
0.2

0.4 O.S

1.0

2.0

4.0 6.0

VR. REVERSE VOLTAGE (VOLTS)

1-219

10

20

40

2N6034, 2N6035, 2N6036 PNP
2N6037, 2N6038, 2N6039 NPN

IDJ

PNP
2N6034.2N6035.2N6036

NPN
2N6037.2N603B.2N6039

I

FIGURE 8 - DC CURRENT GAIN

6.0k

6.0k

4.0 k
3.0k

z

V

;;;:
:: 2.0 k
z
w

~

~

~
150 c

4.Ok

r-...'

./

r--,..
"'.,'f""

'\ r\

"\ '\

'"
'"i:l1.0k L

}1

800

-550 C

~

,\

W
~600

~

/
0.06

0.1

250 C/'"

"

~

. . .v

~

~\

/

400
300

4.0

2.0

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

~

~

VCE = 3.0 V

.... ~

~

2.0 k

600

300
0.04

/

3.0k

...c

400 1/

"-

z

800

::: 1.0k
c

/

V

II

:::>

TJ = 125 0 C

VCE=3.0V-

TC-l25 oC

0.04 0.06

0.1

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

4.0

2.0

FIGURE 9 - COLLECTOR SATURATION REGION
c;; 3. 4
~

3. 0

I
I
I

II
II
II

:; 2. 6

IC0.5A

1.0 A

'"
~
w

~

'">

g 3.4

II
II
2.0A

TJ = 25 0 C

'"w
'"~
'">

~

4.0 A

~ 2.2

ffi
I:

....
~ 1.8
'"
'" 4
....
frl1.
::::
'"
~1.0

..,

3.0

l J
I I
I I

II
II

IC =
0.5 A

1.0 A

2.6

2.0 A

TJ' 250 C

4.0 A

2.2

aa:

1.8

~

1.4

8

1.0

........

W

> O.6
0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

~ 0.6
0.1

100

0.2

0.5

1.0

2.0
5.0
10
lB. BASE CURRENT (mAl

la. aASE CURRENT {mAl

20

50

100

FIGURE 10 - "ON" VOLTAGES

2.2

1.8

.....

TJ = 25 0 C

/'" ,.,

I II

~
'"
~

II II
........

VaE{sai) @llcila = 250
1.4

I

w

'"

~

'" 1.0
>
>'

I II

-

JC~{~t) @lIChB; 250

0.6
O.2
0.04

0.06

0.1

',/

2.2

--- /

~

VaE @I VCE = 3.0 V

-

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

J 11 L

2.

V~E\":1 ~llc/lB - 250

VBE@lVCE=3.0V

I

w

~

,.,/

....... , /

IIII

1.4 f -

~ 1. 0

>

:>

IIII

/

TJ = 250 C
1.8

",/

r-V~E!":) ~IICilB ~ 25J

/

~

O.6

2.0

4.0

1-220

O.2
0.04 0.06

0.1

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

2.0

4.0

®

2N6040 thru 2N6042 PNP
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN

MOTOROLA

PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS

DARLINGTON
8 AMPERE

... designed for general· purpose amplifier and low·speed switching
applications.
• High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 VO L TS
75 WATTS

•

Collector· Emitter Sustaining Voltage - @ 100 mAdc 11 J
VCEO(sus) = 60 Vdc (Min) - 2N6040. 2N6043
= 80 Vdc (Min) - 2N6041. 2N6044
= 100 Vdc (Min) - 2N6042. 2N6045

•

Low Collector-Emitter Saturation Voltage - 111
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040.41.2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042. 2N6045

•

2N6040
thru

2N6045

Monolithic Construction with Built-In Base·Emitter
Shunt Resistors
(1) Applies to corresponding in-house part numbers also.

"MAXIMUM RATINGS
2N6040
2N6043
MJE6040
Symbol MJE6043

Rating

2N6041
2N6044
MJE6041
MJE6044

2N6042
2N6045
MJE6042
MJE6045

Unit

VCEO

60

80

100

Vdc

Collector-Base Voltage

VCB

60

80

100

Vdc

Emitter-Base Voltage

VEB

Collector-EmItter Voltage

Collector Current

Continuous
Peak

•
•

...

5.0

IC

.

IB

-120

8.0
16

.

..

Base Current
Total Power Dlsslpatlon@Tc
Derate above 25°C

25°C

PD

75
-0.60

Total Power DISSIpation @TA

25°C

PD

2.2
•
-0.0175~.

Derate above 2SoC
Operating and Storage Junction,
Temperature Range

~

T J. Tst9

-65 to + 150 ------.

Vdc
Adc

DIM

••
C

STYlET
PIN 1 BASE

D
F
G
H

2comCTDR
3 fMCITfR
4 COllECTOR

J

•

W/oC
Watts

y

Watts

W/oC
°c

Nons

l

••
•,•

mAde

, IllMENSIONIIAPPUESTOAlllEAOS
2 DIMENSION L APPlI£STO LEAOSI
"'<01
J DlMENSION2CEfINESA2DNEWIIER£
ALL BDOV "NO lEAOIRREGUlAlliTIES
"RE"llDWED
-4 DlMENSIONING AND TOUAANCING P£R

u

ANSIY145M.1982

5 CONTAOLlINGOIME'l"

C,b\

0

I I I ~IN

f-- ____ PNP
_ _ -NPN

2.0

5.0

10

20

50

100

200

30
0,1

500 1000

f, FREQUENCY (kHzl

0.2

0.5

1.0

2.0

5.0

10

VR, REVERSE VOLTAGE (VOLTSI

1-223

20

50

100

2N6040 thru 2N6042 PNP
2N6043 thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN

PNP
2N6040, 2N6041 , 2N6042
MJE6040, MJE6041, MJE6042
20,000

I

NPN
2N6043, 2N6044, 2N6045
MJE6043,MJE6044,MJE6045

FIGURE 8 - DC CURRENT GAIN
20,000

V~E! 410 ~

I I II
VCE-4.0V

10,000

10,000
7000

z 5000

;;:

TJ.I500C..........

~ 3000

~200
0
a:

a:
=>

...-

..",.....-

..........

25°C

r--

.A'

~ 1000

-

5000
3000

=>

u

~

y

/'

200
0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0 10

'"

......-

-::;;z. '- -55°C

300
0.2

~

25°C/"

500

oV
0.1

A-""

1000

o

~ 700
- 500 ~1-55c...
300

,

2000

u

~

...-

TJ=1500C.,.......

~

,,~

o

20

~

'"~

0.1

02

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IG. COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

FIGURE 9 - COLLECTOR SATURATION REGION
Cii' 3.0

I III

~

o

~

2.6

IC-2.0A

~
o

ffi

II
II

I III

~

4.0A

~
~

ffi

~

a::

f'.

o

~

8 1.4

8

~.
> 1.0

1\

\

2.2

\

1.8

I\..

1.4

t'l

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

r-..

0.3

0.5

0.7

1.0

la, aASE CURRENT (mA)

TJ = 25°C

V

2.0

w

>

1.5

VaE@VCE=4.0V

- ,',

0.5
0.1

I 1
VCE(sat) @Ie/la = 250
0.3

--

~

V

/"

7.0

10

20

30

0.5 0.7

1.0

J

//

2.0

V-"

w

'"«

V

o~
>
>'

V

VV

VaE( ..t) @Ic/la = 250

0.2

~

V

~

)

1.0

5.0

T)25 01C

~

>'

3.0

2. 5

2. 5

~

2.0

la, aASE CURRENT (mA)

FIGURE 10 - "ON" VOLTAGES
3.0

3.0

'"
~
o

S.OA

2.6

> 1.0

0.3

TJ = 25°C
4.0A

lI-

\

g

III

le=2.0A

~
o

\

1.B

3.0

~
o

S.OA

2.2

::
a:o~

en

TJ = 25°C

1.5 VaE(jt)

i

b::::: ~

Ic/la = 250

,/
VaE@VcE=4.0V

.......... V

1.0

-I-'"

VCE(sat)@ leila = 250

O. 5
2.0

3.0

5.0

7.0

10

0.1

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5

0.7

1.0

2.0

Ie, COLLECTOR CURRENT (AMP)

1-224

3.0

5.0

7.0

10

®

2N6049
MOTOROLA

MEDIUM·POWER PNP SILICON TRANSISTOR

..

4 AMPERE

· .. designed for general-purpose switching and amplifier applications

POWER TRANSISTOR
PNP SILICON

• Excellent Safe Operating Area
• DC Current Gain Specified to 4.0 Amperes
• Complement to NPN Type 2N3054A

55 VOLTS
75 WATTS

"MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Collector-Emitter Voltage
IRBE

Symbol

Value

Unit

VCEO

55

Vdc

VCER

60

Vdc

= 100111

Collector-Base Voltage

VCB

90

Vdc

Emitter-Base Voltage

VEB

7.0

Vdc

IC

4.0

Adc

Collector Current

~

Continuous

Peak

10

Base Current
Total Device DissipatIon @TC

= 25°C

IB

2.0

Adc

Po

75

Watts

0.43

W/oC

Tj. T stg

-65 to +200

°c

Derate above 25°
Operating and Storage Junction,
Temperature Range
·Indlcates JEOEC Registered Data

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance,
Junction to Case

Symbol

Max

Unit

DjC

2.33

°C/W

ilK~=-'
I EI
ZT j
f y'y
lG

·'ndicates JEDEC Registered Data

FIGURE 1 - POWER DERATING

U

160
140

~

120

~

100

~

0

I--- r--...

"'"t'--.

~

ill;:;

::;

...15c
...

""'I--..

.........
.........

"-

0
0
0
50

Ts

~

-

0

25

--

MILLIMETERS
INCHES
STYLE I
PIN 1. BASE
DIM MIN MAX
MIN MAX
2. EMITTER
A
9, 7
lJi5lL
CASE COLLECTOR
B
21.08
0.830
C
6.35
7.62 o.l~O 0.300
0
0.97
1.09 0.038 0.043
1.18 0.055 0.010
1.40
E
F 29.90 30.40 1.1-77 1.197
G 10.67 11.18 0.420 0.440
H
5.33
5.59 0.210 0.220
J 16.64 17.15 0.655 0.675
K 11.18 12.19 0.440 0.480
Q
3.81
4.19 0.150 0.165
R
26.67
1.050
U
2.54
3.05 0.100 0.120

75

100

125

TC, TEMPERATURE (DC)

"'"

150

I"'"

175

'·228

I

CASE1-04

20
NOTES:
1. ALL RULES AND NOTES ASSOCIATEO WITH
REFERENCED TD·3 OUTLINE SHALL APPLY.

2N6050 thru 2N6052 PNP/2N6057 thru 2N6059 NPN

*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

I

Characteristic

Symbol

Min

Max

60
80

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC = 100 mAde, IS = 0)

Collector Cutoff Current
(VCE = 30 Vde, IS = 0)
(VCE = 40 Vde, IB = 0)
(VCE = SO Vde, IS = 0)

1(JO

mAde

ICED

-

2N60S0, 2N6057
2N6051,2N6058
2N6052, 2N6059

Collector Cutoff Current
(VCE = Rated VCEO, VSE(off)
(VCE = Rated VCEO, VBE(oll)

1.0
1.0
1.0

-

mAde

ICEX

= I.S Vde)
= 1.5 Vde, TC

-

O.S
5.0

-

2.0

750
IOD

18,000

-

= IS00C)

Emitter Cutoff Current
(VSE = 5.0 Vde, IC = 0)

III

Vde

VCEO(sus)
2N6050, 2N6057
2N60S1,2N60S8
2N6052, 2N6059

IESO

mAde

ON CHARACTERISTICS (1)
DC Current Gain

-

hFE

(IC = 6.0 Adc, VCE = 3.0 Vdc)
(lc = 12 Ade, VCE = 3.0 Vdcl

-

Collector-Emitter Saturation Volatage
(lC = 6.0 Ade, IS = 24 mAde)
(IC = 12 Ade, IS = 120 mAde)

VCE(satl

-

2.0
3.0

Base-Emitter Saturation Voltage

VSE(satl

-

4.0

Vde

VSE(on)

-

2.8

Vde

Ihfel

4.0

-

MHz

Cob

-

50D
300

pF

hie

30D

(lc

= 12 Adc,

IS = 120 mAde)

Base-Emitter On Voltage
(lc

= 6.0 Ade,

Vdc

VCE

= 3.0 Vde)

DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward
Current Transfer Ratio
(lC = S.O Ade, VCE = 3.0 Vde, I = 1.0 MHz)

Output Capacitance
(VCS = 10 Vde, IE

= 0, I

2N60S0/2N60S2
2N60S7/2N60S9

= 0.1 MHz)

Small-Signal Current Gain
(lc = S.O Ade, VCE = 3.0 Vde, I

= 1.0 kHz)

*lndlcatesJEDEC Registered Data

(1)Pulse test: Pulse Width

=

300 #is, Duty Cycle == 2.0%.

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - SWITCHING TIMES

10
2N6050/2N6052
2N6057/2N6059

Vee
-30 V
RS & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01, MUST BE FAST RECOVERY TYPES, e 9 ,
MBDS300 USED ABOVE IB"'" 100 rnA
MSD6100 USED BELOW IB '" 100 rnA

SCOPE

2.0

.3-

r-['...,

i"" r-...
~ 1.0 t-K'
f-

51

I

I

tr,tf":lOns

25~s

If

I--

-

-

0.5

V1
approx __

-12V

-

Is

Re

V1

:;P~:---d~~~---__ ]~

5.0

r-I,

~d VBE(OI~) =0@

Fortdand tr,Dllsdlsconnected
and V2'" 0

0.2

,..."

~

DUTY CYCLE'" 1 0%

O. I
0.2

For NPN test circuit reverse diode and voltage polarities.

0.5

1.0

3.0

5.0

IC, COLLECTOR CURRENT (AMP)

1-229

VCC =30 V
IC/IB = 250.
IBI = IB2
TJ = 25 0 C

.u

10

J.
20

2N6050 thru 2N6052 PNP/2N6057 thru 2N6059 NPN

FIGURE 4 - THERMAL RESPONSE
1.0

;;i,

0, 7 =0 -0.5

o. 5

~_
wC

:oW

:: ~ o. 3==

0.2

ffi~ 0.2
<;;0:
zc
«
..

0.1

~:

-- -

~ ~ 0.07 ~O.02
~ ~ 0.05

:E

0.02

-

I--

i"""

-10-'

o. 1=:0.05

t:t~'"~ 0.03

-

ROJc'ltI- rltl ROJC
ROJC 1.17 °C/w Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At IJ
TJlpkl - TC = Plpkl8JCltI

PHlJL

....tC

0.01

tt;--J

SINGLE PU LSE

I II

0.01
0.01

DUTY CYCLE, 0 = I1/t2

0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

100

200

300

500

1000

I,TIME Im'l

ACTIVE-REGION SAFE OPERATING AREA

c::
:;;

20

~

10

-

I-

~
~

5.0

'"

2.0

=>
0:

C

~

,

,
"

50

I,

Of

\

\ \
1.0 ~~TJ=2000C
==
B=B
0.5
_ _ SECOND
BREAKDOWN
LIMITED
----lIONDING

0

'"

'[f~I\EO
-------THE~MAl

lIMJTATlON

0.1

IlJITc-250c

- f--

Ii

20

30

~

10

0.5 ms

,'n r..~

13

0:
0:

'tli

0:

0

.Oms

5.0
2.0

0.1 ms

"

"

_______ THERMAL

~i'-

U

0.2

UMITED

70 100

----IONDING

WORE

LIMITED
·------THERMAl

de

LIMITATION

0.1

~ ~~~~.~"~"~5'~Cg~~~~~

I-ll-'

5.0m'

~

0.05~3§~~~~!ijl

0.1
0.05~
10
20
30
50 70 100
VCE, COLLECTOR EMITTER VOLTAGE (VOLTSI

VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI

1.0 ms

0.5 t:-:~:~~OWN -

de

LIMITATION

Ef.~~I

1.0 TJ = 200 0C

8

Ne

50

20

I-

ISI~GlEPUI.SEI

0.05
10

c::
:;;

.'"

-

~ 0.2

FIGURE 7 - 2N6052, 2N6059

FIGURE 6 - 2N6051, 2N6058

FIGURE 5 - 2N6050, 2N6057
50

tiT

~Z5"C

10
20
30
50 70 100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating
area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figures 5,6 and 7 is based on TJ(Rk) = 2000 C; TC is variable depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided TJ(pkl .;;; 2000 C TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal

limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
FIGURE 8 - SMALL·SIGNAL CURRENT GAIN

FIGURE 9 - CAPACITANCE

3000

z

"'"
I-

50 0

1000

-

r--

r-

~

0:

..'"

500

~

100

=>

TC = 25 0C
VCE = 3.0 V
IC = 5.0 A

2000

''-"

'"-'
z

-.
Cib

~

'-.

f== f=

300

50
0.1

)-..

C~(

2N6050/2N6052
I I I I I I IW6057/2~60~9
0.2

0.5

1.0

2.0

5.0

10

VR, REVERSE VOLTAGE (VOLTS)

1-230

20

50

100

2N6050 thru 2N6052 PNP/2N6057 thru 2N6059 NPN

NPN
2N6057.2N6058.2N6059

PNP
2N6050.2N6051.2N6052
FIGURE 10 - DC CURRENT GAIN
20.000

40.000

III
VCE 3.0 V

10.000

"-

L"

z 10.000
;;0

'"....

./

i-'"

t- 25 dC

al

'"=>'-''"

"./

g

1000

V

'-'
0

-55°C

~

500
300
200
0.2

0.3

0.5

2.0

1.0

3.0

5.0

10

VCE" 3.0 V

TJ • 150°C ........

20.000

Tr 150°C

6.000

'\

25°C

4.000

./

2.000

,,/

1.000

-55°C

600
400
0.2

20

0.3

1.0

0.5

IC. COLLECTOR CURRENT (AMP)

2.0

3.0

10

5.0

20

IC. COLLECTOR CURRENT (AMP)

FIGURE 11 - COLLECTOR SATURATION REGION
0;

3.0

?

'"«'"

I 11

2.6

?

w

9.0 A

S.OA

IC·3.0A

~

~o

I I I
1 I

ITJ.25 0C

~
0

0

'"~

1\12A

,,~

1\

> 2.2

1\
1---

~

~

\

1.4

r-.

1.4

~

~

> 1.0
1.0

0.5

2.0

3.0

5.0

20

10

30

50

1.0

0.5

2.0

TJ' 25°C

/

2.5

2.0

w

~

1.5

>
>-

0.5
0.2

ill-0.5

1.0

'"to

3.0

5.0

I:::==F"

10

20

IC. COLLECTOR CURRENT (AMP)

0.5
0.2

"
,,-

VSE@VCE·3.0V

1.0

-I2.0

I

fj

~ 15. r- VSE(sa')I@ICI1S - 250
§;
:>

VCE(sa!) @IC/IS • 250
0.3

50

~
~ 2.0

,,-

VSIE@IVTEI-rr(

1.0

30

0;

~

I--- VBE(sa,)@ICI1S'250

r--

20

10

2.5

,

§
0

5.0

FIGURE 12 - "ON" VOL TAGES
3.0
TJ·250C

3.0

'"'"

3.0

lB. BASE CURRENT (mA)

IS. BASE CURRENT (mA)

?

"

ri: 1.8
o

> 1.0

0

12A

9.0 A

~
I.S

0

~

2.6

II

II

I
6.0 A

~ 2.2

....

8

II TJ '250C
IC' 3.0A

o

....ffi

~
'"

3.0

j I 11_1-1--'
j VCE(",) @IC/IS - 250
0.3

0.5

1.0

2.0

3.0

IC. COLLECTOR CURRENT (AMP)

1-231

5.0

10

20

.~

2N6053, 2N6054, 2N6298, 2N6299 PNP
2N6055,2N6056,2N6300,2N6301NPN

®

MOTOROLA

DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS

DARLINGTON
8 AMPERE

... designed for general·purpose amplifier and low frequency switching
applications.
• High DC Current Gain hFE = 3000 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage -@ 100 mA
VCEO(sus) = 60 Vdc (Min) - 2N611.53, 2N6055, 2N629S, 2N6300
= SO Vdc (Min) - 2N6054, 2N6056, 2N6299, 2N6301
• Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = s.o Adc
• Monolithic Construction with Built-In Base·Emitter
Shunt Resistors

COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS
75,100 WATTS

2N6053
2'0054
ZN60!i5

2N6056

*MAXIMUM RATINGS
2N6053
2N6055
2N6298
Symbol 2N6300

Rating
Coliector~Emitter

Voltage

2N6054
2N6056
2N6299
2N6301

Unit

VCEO

60

80

Vdc

Collector-Base Voltage

VCB

60

80

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

IC

8.0
16

Adc

IB

120

mAde

Collector Current - Continuous
Peak

Base Current

Po

Total Device Dissipation @TC= 2SoC
Derate above 25°C

Operating and Storage Junction Temperature

2N6053
2N6054
2N6055
2N6056

2N6298
2N6299
2N6300
2N6301

100
0.571

75
0.428

-65 to +200

TJ,T stg

NOTE
1. DIM ''Q'' ISOlA
01.

MILUM TERS
M"

INCHES
MIN

MI.

·,•
,
H

,
•
"
J

Watts
wflc

MA'

"n 6" 2'"'62 .,,,
'" '"
34' ""
1177

C
0

I-'l!!

''''
""
''''
1197

...
... ..
"50

''''
''''
, "'"
,
''15
", ''''
66'
"'"
1219 ,
0161 "
11.18

184

'"~
2667

0161

-

ColllctorcoDlI8I:lld\lltiJl!

CASE nOI
(11).3,

°c

Range

THERMAL CHARACTERISTICS

2N6298

2N6053
2N6054
2N6055
Symbol 2N6056

Characteristic

Thermal Resistance, Junction to Case

2N63DD
lN83Dl

Unit

2.33

°CIW

1.75

ReJC

""'"

2N6298
2N6299
2N6300
2N6301

·1 ndicates JEOEC Registered Data.
STYLE!

"N;:~~TER

~

FIGURE 1 - POWER DERATING

Q

100

"""

H

Of--,

...... ~

•

S

... .,.

""" 2N6D53 .hru 2N6056

2N630~

DIM

12.10

""" -=-::s

100

125

150

2
0.021

H

.

J

I44B

1•. 99

S

--

'15

0

0
75

,

"
• ""
,
,11 ,.. "
, , .., ,OS, ,."
• '41 63' , ""
,,. - ,
""- ,...,
,,.
• '61
C

2'
24.33

........... C'....

0

NCHES

MILLI EERS

1'-..
"1.."

2N6298 thru

50

T

"'.........

25

CAS' COLLECTOR'

J-

•

~

175

200

·
T

0015

43

1

28'

'68

0105

0.510 0.590

-

0145

AlIJEOEC OlilltllSlOnsaodlll6 NolasApply

TC, TEMPERATURE (DC)

CASE 81).02
TO-=
.;

1.0

~
r".

r-

0.7
0.5
0.3

.........

'I. ....
~

....... ~

-

P"" I'-' ~

-......

'I

--

"
....

0.2 I-VCC = 3 0 : - f'
f-IC/IB = 250
IB1=1~2
, @V
-0 ~
BE(oll)O. 11=TJ - 25 C - d
2N60S3, 2N60S4, 2N6298, 2N6299(PNP)
0.07
2N60SS, 2N60S6, 2N6300, 2N6301 (NPN)
0.05
2.0 3.0
0.5 0.7 1.0
0.2
0.3
0.1

fortd and tr. D) is disconnected
andV2"'0

For NPN test circuit reverse diode, polarities and input pulses.

IC, COLLECTOR CURRENT (AMP!

1-233

I5.0 7.0

10

III

2N6053, 2N6054, 2N6298, 2N6299 PNP,
2N6055, 2N6056, 2N6300, 2N6301 NPN

FIGURE 4 - THERMAL RESPONSE

OJ

-' 0-

1.0
O. 7 = D-O.S
O.S

-

~~

O.3 - - 1 0.2
~~ 0.2
0-",
0-0

~ i-"""

r---- -0.1

I--

ffi~

O. lE::: =O.OS
~ z 0.07
~ 0.0Sr--0.02

en ~

--=---

pfnIl

I:;:

t:J

r_

:=-;itii

;:-~O.03

0.0

I"'""

~

2~

"SINGLE PULSE

I

I

I I I

2N60S3I2N60S6
R'JC - ~:~~~~: 2N6298/2N6301
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT q
TJ(pk) - TC' P(pk) OJCIt)

DUTY CYCLE. 0 ' q/t2

0.D1

I

0.0 I
0.1

I
I
R'JC (t) = r(t) R'JC

0.2

1111

I
O.S

0.3

0.7

1.0

2.0

3.0

S.O

7.0

I I

10

I I I

20

30

70

SO

100

200

300

700 100

SOO

t, TIME (m,)

ACTIVE-REGION SAFE OPERATING AREA
FIGURE 5 - 2N6053 thru 2N6056

FIGURE 6 - 2N6298 thru 2N6301
0

ms
ms
!15 :"t---;~-i;ii~iiir-i-i-iiiij~-~i-i:il_iii-~il-iii~o:;'limis
5.0

~

TJ-200oC

d

J

~

~~ E - - =
8

@TC'2SoC (SINGLE PULSE)

2.0

1.01=

O.S~

____

0_
0-

f.5 5.01==

.....

2N60~4,

r-----2N60S3,
2N6298, 2N6299(PNP)
- - 2N60SS, 2N6056, 2N6300, 2N6301 (NPN)
0.2
O.S
1.0
2.0
S.O
10
20

30
0.1

SOO 1000

t, FREQUENCY (kHz)

VR, REVERSE VOLTAGE (VOLTS)

1-234

SO

100

2N6053, 2N6054, 2N6298, 2N6299 PNP,
2N6055, 2N6056, 2N6300, 2N6301 NPN

NPN

PNP

I

2N6053,2N6054,2N6298,2N6299

2N6055, 2N6056,2N6300, 2N6301

FIGURE 9 - DC CURRENT GAIN
20,000

20,000

V~E ~ 3 0 ~

I

1

7000
z 5000

~

TJ= 1500 C_
<1
~ 3DO0
~ 200 0

8'"

u

,........f-"

i--"

:.f

1000

c
~ 700

-

.......

25°C

-

~V

30
20

0.1

u

~

0.5

0.7

1.0

2.0

5.0

3.0

bZ

500
300
100

7.0 10

~

'\.'r-,.
V

25 0 C /

1000

c

0.3

150°C,....

.A1

V

=>

.Y
0.2

TJ

u

500==1- 55°;"-

~

5000

'"

~ 3000
~ 2000

f-"i'.:

I

VCE" 3.0 V

10,000

10,00 0

-55°C

Y

l

V
0.1

0.1

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

I

10

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

I

~

FIGURE 10 - COLLECTOR SATURATION REGION
~ 3.0

I III

'"~

I III

~ 2.6

'"
ffi

2.2

2~

~

>

'"

~
~ 2.6

'"~
l="'

\

1.8

f'.

1.8

~

1.4

W

u

1.0

0.5 0.7

1.0

1.0

3.0

5.0

TJ = 25°C
4.0 A

7.0

10

20

30

> 1.0
0.3

\
\

\

i
\..
r-,.
0.5

0.7

1.0

IB, BASE CURRENT (rnA)

3.0

"'S'"

V

~

I

/

7.0

10

VBE1@VCE 3.0V

'"
S

V

V

VBE( ..t)@IC/IB=250

11

'"
>
>

,/

1.5 -

....-

VBE@VCE=3.0V
VBE(sat)@ IC/IB 125~

1.0

20

30

0.5 0.7' 1.0

i.,...oo" ~

~

,,- V

V

I--

VCE(sat) @IC/IB = 250

VCE("t) @IC/lB=250
0.3

2.0

"'
'"

..",. ~

I-"'

0.2

5.0

1.5

/

0.5
0.1

3.0

FIGURE 11 - "ON" VOLTAGES
3.0
TJ = 25°C

2. 5

1 'I

2.0

IB, BASE CURRENT (rnA)

TJ = 15°C

1.0

II

6.0A

2.2

15~
8

1.4

0.3

III
I = 2.0A

~

1\

\

3.0

S

6.0 A

4.0A

l=

15ti:
'"

TJ = 25°C

I

IC=2.0A

'"

S

V,j

I

0.5
2.0

3.0

5.0

7.0

10

IC, COLLECTOR CURRENT (AMP)

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

IC, COLLECTOR CURRENT (AMP)

1-235

5.0 7.0

10

2N6077
2N6078

®

MOTOROL.A

HIGH VOLTAGE NPN SILICON TRANSISTORS

7 AMPERES

~ the 2N6077 and 2N6078 transistors are designed for highvoltage, high-speed switching applications. They are characterized
for operating directly off the rectified 110 Volt power lines in
circuits such as:

NPN SILICON
POWER TRANSISTORS
275-300 VOLTS
45 WATTS

• Switching Regulators
• Solenoid and Relay Drivers
• Motor Controls
•

Inverters

~!b~
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base Current - Continuous
Total Power Dissipation
@TC=250 C
Derate above 25°C
Operating and Storage Junction
Temperature Range

Symbol

2N6077

2N6078

Unit

VCEX
VCBO
VEBO
IC
ICM
IS
Po

300
300

275
275

Vdc
Vdc
Vdc
Adc

TJ, Tstg

6
7
10

Adc

45

Watts
wfJC
°c

0.257
-65 to +200

Maximum Lead Temperature for Soldering

Symbol
RSJC
TL

E
:SEATING PLANE

~-D

~i

K

I

-~-F~~

-J~

4

THERMAL CHARACTERISTICS
Characteristic
Thermal Aesistance. Junction to Case

--1
'~'
'r

4- -------

Max
3.9
275

Purposes: l/S" from Cose for 5 Seconds

Unit
°C/W
°c

V': ~

1°.:6 ~ J;------<
H
I "

~

~T II
G

STYLE I.
PIN I. BASE
2. EMITTER
CASE' CO lLECTOR

DIM
B
C

*lndiCBtes JEOEC Reglltered Data

l-

D
E
F

G
H

J
K
P
Q

S
T
U

MILLIMETERS
MAX
MIN
11.94 12.70
6.35 B.64
0.71
0.86
1.91
1.21
24.33 24.43
4.83
5.33
2.41
2.61
14.48 14.99
9.14
1.21
3.86
3.61
8.89
3.68
15.15

-

INCHES
MIN
MAX
0.470 0.500
0.250 0.340
0028 0.034
0.050 0.015
0.958 0.962
0.190 0.210
0.095 0.105
0.510 0.590
0.360
0.050
0.142 0.152
- 0.350
0.145
0.620

All JEOEC Dimensions and and Notes Apply.
CASE 8D'()2

TO·66

1-236

2N6077, 2N6078

*ELECTRICAL CHARACTERISTICS (TC ~ 25 0 C unless otherwise noted.)

I

I

Characteristic

Symbol

Min

Max

275
250

-

-

1.0

-

5.0
0.05
8.0
0.2

-

2.0

12

70

-

0.5

Unit

OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage (Table 1)
2N6077
2N6078

Emitter Cutoff Currant
(VBE ~ 6 Vde, IC ~ 0)

lEBO

Collector Cutoff Current
(VCEV ~ 250 Vde, VBE(off) ~ 1.5 Vde)
(VeEV ~ 250 Vde, VSE(off)

Vdc

VCEO(sus)

(lC~2oomA,IB~0)

ICEV

= 1.5 Vde, TC ~ 1250 C)

2N6077
2N6078
2N6077
2N6078
ICED

(VCE ~ 250 Vde, VBE(off) ~ 1.5 Vde)

mAde

-

Collector Cutoff Current
2N6077

mAdc

mA

ON CHARACTERISTICS
DC Current Gain
(lC = 1.2 Ade, VCE = 1 Vde)

-

hFE

Collector-Emitter Saturation Voltage

VCE(sati

(Ie = 1.2 Ade, 18 ~ 0.2 Adc)

2N6077
2N6078
2N6077
2NS078

(Ie = 3 Ade, IB ~ O.S Ade)
(Ie = 5 Adc, 18 ~ 1 Ade)

-

Base-Emitter Saturation Voltage

VBE(sati

(Ie = 1.2 Ade, 18 = 0.2 Adc)

2N6077
2N6078
2N6077
2NS078

(lC = 3 Ade, IB = 0.6 Ade)
(lC = 5 Ade, 18 = 1 Ade)

Vdc

1.0

-

3.0

-

1.6

Vdc

-

1.9

-

2.0

-

0.75

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(Ie

=200 mAde, VCE =10 Vdc, f

es ~ 1.0 MHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)

I

Rise Time

Storage Time
Fall Time

-'I

(VCC ~ 250 Vde, IC = 1.2 Ade.
181

~

tr

182 = 200 mAde = 100 p.s,

t.

DutY Cycle'; 2.0%)

tf

-

p..

5.0

p.s

0.75

p..

* Indicates JEDEC Registered Data

FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA

1L

'"

10
7
5
3

50,1.18

100J,ls
" 200ps

::!.

~
a
_

'"

~

1
O. 7
5
o.
O.3

~

0.2 SECOND BREAKDOWN LIMITED

30b~.
1

1,\

m.

BONDING WIRE L1MITED-- - - 1,\
O. 1 THERMALLY LIMITED@TC"250 C---- 1,\
101
8 0.07
u· o.o5
- 0.0 3
100 ms
0.02
2N6078
d~t
2N6071
0.0 1
20 30 50 70 100
200 300 5007001000
5 7 10
1

~

m.

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe Operating area curves indicate IC~V CE limits of the transistor
that must be observed for reliable operation; ;.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure. 12 and 13 is basad on T C = 250 C; T J(pk)

is variable depending on power level. Second breakdown pulse
limits are valid for dutY cycles to 10% but must be derated for

temperature"according to Figure 1.

fill

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-237

III

PNP

NPN

2N6107 2N6288
2N6109 2N6290
2N6i1112N6292

III

®

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON

designed for use in general-purpose amplifier and switching
applications.
• DC Current Gain Specified to 7.0 Amperes
hFE = 30-150 @ IC = 3.0 Adc - 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc - All Devices
•

Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) -2N6111, 2N6288
= 50 Vdc (Min) - 2N6109, 2N6290
= 70 Vdc (Min) - 2N6107, 2N6292

•

High Current Gain - Bandwidth Product
fT =4.0 MHz (Min) @ Ie =500 mAdc - 2N6288, 90, 92
= 10 MHz (Min) @ Ie" 500 mAdc - 2N6107, 09,11

•

TO-220AB Compact Package'

•

TO-66 Leadform Also Available

MOTOROLA

30-50-70 VOLTS
40 WATTS

,

*MAXIMUM RATINGS
Rating

Symbol

2N6111
2N6288

2N6109
2N6290

VCEO
Vca
VEa

30
40

50
60

Collector·Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak
Base Current

...

IC

.
..

la
Po

Total Power Dissipation
@TC=250C
Derste above 25°C
Operating and Storage Junction
Temperature Range

2N6107
2N6292
70
ao

5.0
7.0
10

..

3.0

•

...

40
0.32

_ - 6 5 to + 1 5 0 -

TJ, T stg

THERMAL CHARACTERISTICS
Characteristic

Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
wl"c
°c

=1r

J
STYLE 1:

'"
20

frn

L-1
j'Lft
o-ll-

-l-il-J
i!- R

L

G

~

N
~~~~~~,

TERS

A~

1"-.

40

WiT

BASE
2. COLLECTOR
3. EMITIER
4. COLLECTOR

!'....

..... ~

60

80

""

100

B

9.

C

4

D
F
G
H
J
K
L
I

~

o
o

C

PIN 1.

FIGURE 1 - POWER DERATING

0

S

t-tfl~ ';~ '-t

Thermal Resistance, Junction to Case
'Indicates JEDEC Registered Data

0

r Bl.-l

f
Ir~

Q

R

!'...

120

S

T
U

t'...

140

V
160

Z

0
3
2
279
036
1270
114
483
254
2.04
1.14
5.97
0.00
1.14

IICHES

MAX

MIN

MAX

1575
10.29
482
0.89
373
267
393
056
1427
139
533
3.04
2.79
1.39
8.48
1.27

0575
0.380
0160
0025
0142
0095
0110
0014
0500
0045
0190
0100
0080
0045
0.235
0.000
0.045

0.620
0405
0190
0035
0147
0105
0155
0022
0562
0055
0.210
0120
0.110
0.055
0255
0.050

2.03
CASE 221A'()2
TQ-220AB

Te. CASE TEMPERATURE lOCI

1-238

0.080

2N6107, 2N6109, 2N6111 PNP, 2N6288, 2N6290, 2N6292 NPN

-ELECTRICAL CHARACTERISTICS

(TC - 26°C unle.. otherwise noted)
Min

MI.

30
50
70

-

-

1.0
1.0

-

100
100
100
2.0
2.0
2.0

30
30
30
2.3

150
150
150

VCE(s.,)

-

3.5

Vdc

VBE(on)

-

3.0

Vdc

Unit

OFFi:HARACTERISTICS
Coliector·Emltter Sustlining Voltlgo (1)
(lC ~ 100 mAde, IS - 0)

Collector Cutoff Current
(VCE - 20 Vde, IS = 0)
(VCE - 40 Vde, IS = 0)
(VCE - 60 Vde, IS = 0)

mAde

ICED
2N6111,2N6288
2N6109,2N6290
2N6107,2N6292

Collector Cutoff Current
(VCE = 40 Vde, VES(off)
(VCE =60 Vde, V ES(off)
(VCE = SO Vde, VES(off)
(VCE = 30 Vde, VES(off)
(VCE = 50 Vde, VES(off)
(VCE = 70 Vdc, VES (off)

r.o

ICEX

2N6111,2N628S
= 1.5 Vdc)
2N6109,2N6290
= 1.5 Vde)
2N6107,2N6292
= 1.5 Vde)
= 1.5 Vdc, TC = 150°C) 2N6111, 2N6288
= 1.5 Vdc, TC = 150°C) 2N6109, 2N6290
= 1.5 Vdc, TC = 150°C) 2N6107, 2N6292

Emitter Cutoff Current
(V SE

Vde

VCEO(sus)
2N6111,2N6288
2N6109,2N6290
2N6107,2N6292

lEBO

= 5.0 Vdc, IC = 0)

"Adc

1.0

I

\

mAde

j

mAde

ON CHARACTERISTICS (1)

DC Current Gain
(lC
(lc
(lc
(lC

2N6107,2N6292
2N6109,2N6290
2N6111,2N6288
All Devices

Collector-Emitter Saturation Voltage
(lC

= 7.0 Adc, IS = 3.0 Adc)

Base-Emitter On Voltage
(lc

-

hFE

=,2.0 Adc, VCE =4.0Vdc)
= 2.5 Adc, VCE = 4.0 Vdc)
= 3.0 Adc, VCE = 4.0 Vde)
= 7.0 Adc, VCE = 4.0 Vde)

-

I

il

Ij

II

= 7.0 Adc, V CE = 4.0 Vdc)

',1

OYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product (2)

MHz

fT

(IC = 500 mAdc, VCE = 4.0 Vdc, f test = 1.0 MHz)
2N6288, 90, 92
2N6107,09,11

Output Capacitance

4.0
10

-

Cob

-

250

pF

hfe

20

-

-

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Small-Signal Current Gain
(lC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
·Ind,cates JEDEC ReglStired Dati.
(, )Pul.e Test: Pulse Width .. 300 I'S, Duty Cycle .. 2.0%.
(2)fT = I hie Ie f test

FIGURE 3 - TURN·ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
2.0
VCC
+30 V

0.7
0.5

RC
RB

TJ - 250 C
VCC=30V
ICIIB = 10

1.0

SCOPf

~ 0.3
~

0.2

t=
.,
51

·4V
RB and RC VARIED TO OBTAIN DES1REO CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, ,g'
MBD5300 USED ABOVE IB =100 mA
MSD6100 USEO BELOW IB =100 mA

"-

O. 1

tr. tf!S10 ns
OUTY CYCLE = 1.0%

........

....... r-.....
........

-

If

I--'"'

Id@ VBE(oft) ~ 5.0 V

0.07
0.05
0.03
0.02
0.07

1-239

0.1

0.2

0.3
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

3.0

5.0 7.0

2N6107, 2N6109, 2N6111 PNP, 2N6288, 2N6290, 2N6292NPN

FIGURE 4 - THERMAL RESPONSE

c
~

i
w
u

10
1
5

o ~ 05

,

3
0.2

o. 2

~

i

t;

0.1
1
~ 001 - 005
0.05
002
~ 00 3
a:i 0.02 .-.::
v;
z
l ........
~ 0.0 001
0.02

~
'"

-

:;00-

=+- ~"""

~

w:::
n

I- :::;..

......

,

,

SliG\Emi,
01

005

01

iii
, II [

Plpk)

i

tJUl
-r~~

!

"!Jelt) ~ ,It) ROJe
ROJe ~ 3.125° erw Max
o CURVES APPLY fOR POWER
PULSE TRAIN SHOWN
REAO TIME AT tl
TJ(pk) - Te ~ Plpk) ZOJe(t)

DUTY CYCLE, 0" 11112

10

05

,

r-

~~

r-

20
I,

liill .Ll .1 .1.1 J.lill _Ll .l.l..l..ill
to
100
20
50
200
500
10k

50
TIME (ms)

FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
10
1.0
0. 5.0

~
0:
0:

1.0
~ O.1
~ 0.5

a:

LIMITED

t-

-~ BONDING WIRE LIMITED
THERMAL LIMITATION
AT TC' 25°C
(SINGLE PULSE)

g

\.

.......
~dc

are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor

i\1.U

1\

that must be observed for reliable operation; i.e., the transistor

must not be subjected to greater dissipation than the curves indicate.
The data 01 Figure 5 is based on T J(pk) • lSo"C; TC is variable

11

depending on conditions. Second breakdown pulse lim1ts are valid

0.5 ms

lor duty cycles to 10% provided T J(pk) ..;; lSo"C. T J(pk) may be
calculated from the data in Figure 4. At high·case temperatures,

2N6! 11. 2N~2882N6109.2N6290
2N6101.2N6292

~ 0.3

O. 1
5.0

Tnere

- ...

.....
SECONO BREAKDOWN

5 2.0
~

5.0 ms

TJ'I50oC

3.0

thermal limitations will reduce the power

1,\

that

can be handled to

values less than the limitations imposed bV second breakdown

1 1
1.0

10

20

30

50

70

100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 6 - TURN-OFF TIME

. FIGURE 7 - CAPACITANCE

5.0

300
TJ =25°C
VCC·30V
Iclls'lO
IB1' IS2

3.0
2.0

u:

ts

1.0
:; O. 7
~ 0.5

oS
w
u

z

'"
~
u
>-

;::

..; 0.3

o.2

100

r- t- r-:;...

u

r---...

tl

~

0

t:
-I'--

0

o.1
0.07
0.05
0.07 0.1

1

TJ~25JC - r-t-

200

r-

30

0.2 0.3
0.5
1.0
2.0
IC. COLLECTOR CURRENT (AMP)

3.0

5.0

7.0

0.5

1.0

2.0

3.0

5.0

10

VR. REVERSE VOLTAGE (VOLTS)

1-240

20

30

50

®

NPN
PNP
2N6121 2N6124
2N6122 2N6125
2N6123 2N6126

MOTOROL.A

III
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
4 AMPERE

... designed for use in power amplifier and switching circuits, packaged in the compact TO·220AB outline. TO-66 lead form also
available.
"MAXIMUM RATINGS

veE a

2N6121
2N6124
45

Collector-Base Voltage

VCB

45

Emitter-Base Voltage

VEB

Rating

Symbol

Collector-Emitter Voltage

Collector Current

Ie

Base Current

'B
PD

Total Power DlsslpatlOn@Tc=250C

Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ, T stg

I
l

45-80 VOLTS
40 WATTS
2N6122
2N612S

12N6123

I

60

60

2N6126
BO

BO

Unit

Vdc
Vdc

5.0
4.0
1.0

Vdc
Adc
Adc

40

1-------

POWER TRANSISTORS
COMPLEMENTARY SILICON

Watts
mW/oC

320

°e

;65 to +150

THERMAL CHARACTERISTICS
Characteristic

Max

Thermal Resistance, Junction to Case

3.12

*ELECTRICAL CHARACTERISTICS (TC '" 2SoC unless otherWise noted)
Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustalnmg Voltage (1)
(Ie'" 0.1 Adc,IS ",,0)

Vdc
2N6121,2N6124

2N6122.2N612S
2N6123.2N612B

Collector Cutoff Current

mAde

Collector Cutoff Current
(VeE = 45 Vdc, VEBloff)
(VeE = 60 Vdc, VEBJoffl

2N6122.2N6125
2N6123,2N6126

mAde
=

1.5 Vdcl

= 1.5 Vdcl

(VeE = 80 Vdc, VEB(off) '" 1.5 vdcl
(VeE = 45 Vdc, VESloffl = 1.5 Vdc,

TC

1.0
10
1.0

2N6121,2N6124

(VeE'" 45 Vdc, IS '" 0)
(VeE = 60 Vdc, IS '" 0)
(VeE = 80 Vdc, 's = O)

125°C)
(VeE = 60 Vdc, VESloff) '" 1 5 Vdc,
TC'" 125°C)

0.1
0.1

2N6121,2N6124
2N6122.2N6125
2N6123.2N6126
2N6121,2N6124

0.1
2.0

2N6122,2N6125

2.0

=

(VeE = 80 Vdc, VEBloff) = 1.5 Vdc,
Tc'" 125°C)

Collector Cutoff Current
(Vea = 45 Vdc, Ie = 0)
(Vea = 60 Vdc, Ie '" 0)
(Vea = 80Vdc, Ie '" 0)

(Ie = 4.0 Adc, VeE = 2.0 Vdc)

mAde

leBO

2N6121.2N6124

0.1

2N6122. 2N6125
2N6123.2N6126

0.1

Emitter Cutoff Current
IVSE = 5.0 Vdc, Ie = 0)

ON CHARACTERISTICS
DC Current Gain (1)
(Ie = 1 5 Adc, VeE = 2 0 Vdcl

2.0

2N6123, 2N6126

0.1
1.0

'Eao

mAde

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

-....

IETERS

DIM -':

T

2N6126,2N6124'
2N6122,2N6125
2N6123,2N6126

B

C
D

2N6121.2N6124
2N6122,2N6125
2N6123.2N6126

F
G
H

J

Collector-Emitter Saturation Voltaga 11l
lie = 1.5 Adc. IS"' 0.15 Adcl
(Ie = 4.0 Adc, la = 1.0 Adcl
Base-Emitter On Voltage (1)
fie = 1.5 Adc, VeE'" 2.0 Vdcl
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
lie = 0.1 Adc, VCE = 2.0 Vdc, f = 1.0 kHzl
Current-Gain-8andwidth Product
lIC = 1.0 Adc, VeE'" 4.0 Vdc, f = 1.0 MHz)

K
L

•
Q

R

S
T
U

V

Z

241
279
0.36
1270
1.14
4.B3
2.54
204
1.14
5.97
0.00
1.14

INCHES

MAl

MIN

MAX

15.75
10.29
4.82
0 B9
373
267
3.93
0.56
14.27
1.39
533
304
2.79
1.39
6.48
1.27

0575
03BO
01BO
0 025
0142
0095
0110
0014
0.500
0.045
0190
0.100
0.080
0.045
0.235
0.000
0.045

0.620
0.405
0.190
0.035
0147
0105
0.155
0.022
0.562
0055
0210
0120
0.110
0.055
0.255
0.050

2.03
CASE 221A-lI2

(1 lpulse Test: Pulse Width ~300 1'5, Duty Cycle <':2.0%.
• Indicates JEDEC Registered DaUi.

TO-220AB

1-241

O.OBO

'2N6121,2N6122,2N6123,NPN,
2N6124,2N6125, 2N6126, PNP

FIGURE 1 - DC CURRENT GAIN
10
TJ = 1500 C

ffi ~:~
::;

i

3.0

-

~ 2.0

z
~ 1.0

!;;
~

- - '-

-- t-_ - -

N

1-1

-

-

It

VCE - 2,0 V I - ,VCE 10V I - -

r- ~:::::

~

0,)

0.5

g"

0.3

:

0.2

- 25 0 C

0,1
0,004

0.007

0.01

0,02

0.03

--

r--..

·-550 C

0,05

0,1

0,2

0,3

0,5

2,0

1.0

~

3.0

4.0

IC. COLLECTOR CURRENT (AMP)

FIGURE 2 - COLLECTOR SATURATION REGION

~ 2.0
Q

>
;:;; 1.6

1\

TJ = 250 C

~

~ 1.2

~
~

0.8

::l

0.4

"'~

IC = 10 mA

1DOmA

1.0A

3,0 A

\

II
II

r-..

8

\

\

\
\

...... r-

i'-.

~

>

0,05 0,07

0,1

0,1

0,3

0,5

0')

1.0

2.0

5,0 7,0
10
3,0
lB. BASE CURRENT (mA)

I I

1.2

''"~"

0.8

o
>

VBE(sat) @ICIIB,l)O

~

300

500

III

VCE(sat)@IC/IB= 10
0,02 0,030,05
0.1
0.2 0,3 0,5
1.0
IC. COLLECTOR CURRENT (AMP)

+1.0

w
~

IL

'OV for VCE(sat)

t(I,5

V

-0.5

I-

~1-l.0

III
0,01

200

,/

<3

VB @VCE-2.0V

0,4

0.005

i

/

w

100

TJ = -65 0 Cto +1500 C

.§. +1.5
~

c5

70

11ppLJslFb~ II C/IBI.;; lF~I~

~ +2.0
:;;
~

~

50

+2.5

TJ = 250 C

1,6

30

FIGURE 4 - TEMPERATURE COEFFICIENTS

FIGURE 3 - "ON" VOLTAGES
2.0

20

~

....... 1-"

ITiWL
I II II

-1.5

1-.

i

2,0 3.04,0

1-242

-2.0
-2,5
0.005

0.01

V

0,02 0.03 0.05 0.1
0,2 0.3 0.5
1.0
IC. COLLECTOR CURRENT (AMP)

2,0 3,04.0

2N6121,2N6122,2N6123,NPN,
2N6124,2N6125,2N6126,PNP

FIGURE 5 - COLLECTOR CUT·OFF REGION

FIGURE 6 - EFFECTS OF BASE·EMITTER RESISTANCE

103

~ 107
2'"

f--VCE =30 V

......

, ......

r--TJ - 1500C
lr-','

1== Fl00 0C

- -

~ FREVERSE

10-3
-0.4

-0.2

FORWARD=

'CES
+0.1 +0.2

-0.1

=

+0.3

.;j).4

+0.5

+0.6

300

TURN·ON PULSE
Vcc

~

+11 V

13r-

: i:
I

I

----i

-...;::

~

r-..

r--..

140

160

"-

"

<.>

z

~

U

~

C,b

;3 70
·4.0 V

V i n - i - - - ) - T - t3<15ns

I

......

TJU50~ f-

« 100

Cid«C,b

11.;7.0 ns
100<12<5001'S

........

FIGURE 8 - CAPACITANCE

w

RB

APPROX

......

......

~
~

Vm o--'lM-....- I

VEB(Offl--lI--Il

...

200

I

t- - - - -

I r.......

60
80
100
120
TJ. JUNCTION TEMPERATURE (DC)

40

FIGURE 7 - SWITCHING TIME EQUIVALENT CIRCUIT

Vm 0

IC=10xICES

(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)

VBE. BASE·EMITTERVOLTAGE (VOLTSI

APPRO
AX
~IV

VCE = 30 V

......

IC=2x ICES

!==25 0C

-0.3

r.......

IC~ICES

f

1==

r--..

50
Ccb

I
12

I-

DUTY CYCLE ~ 2.0%
APPROX -S.O V

TURN·OFF PULSE

30
0.1

I
0.2 0.3

RB AND RC VARIED TO OBTAIN DESIRED CURRENT lEVELS

2.0 3.0 5.0
0.5
1.0
VR. REVERSE VOLTAGE (VOLTSI

20 3040

10

Ii

Reverse all polarities and diode
for PNP transistors.
FIGURE 10 - TURN·OFF TIME

FIGURE 9 - TURN·ON TIME
2.0

2.0

1.0

0.7
0.5

1~IIBI_lb= 1=

II

P-

]: 0.3

~ 0.2

TJ= 250C

I,@VCC- 30 V

1=

"1i-

w
::E

;::
-"

0.1
Id@ VEB(offl- 2.0 V

0.07
0.05

0.3

0.5 0.7

1.0

IB"'B~t l -

ICIIB = 10
1;-1, llBli= ~
Tr 25 0C
~

i=

.11
t,@VCC=10V

0.2

O. 1
0.07
0.05

rt+-0.2

r- :,

1,@VCC-30V

]: 0.3

tr@VCC=10V

0.1

II

0.7
0.5

;::

0.03
0.02
0.05 0.07

H-b-.

1.0

2.0

3.0 4.0

IC. COLLECTOR CURRENT (AMPI

1-243

0.03
0.02
0.05

om

0.1

0.2
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)

2.0

3.0 4.0

2N6121,2N6122,2N6123,NPN,
2N6124,2N6125,2N6126,PNP

RATING AND THERMAL DATA

FIGURE 11 - ACTIVE REGION SAFE OPERATING AREA
0
100/-ls

6:' 5. 0

">-

S

~

i

'"~

~

~
8

'"0
~

'" ,

~lJIs

......

TJ" 150·C

1,\

There are two limitations ,on the power handling ability of a
transistor: peak junction temperature and second breakdown.

1 ms

\

Safe operating area curves indicate I.C~VCE li,mits of the transistor
that must be observed for reliable operation; i.e., the transistor'
must not be subjected to greater dissipation.than the curves indicate.
The data of Figure 11 is based on TJ(pkl = 1500 C; TC is variable

Bonding wire limit

depending on conditions. Second breakdown pulse limits are valid

o.5 t------- Curves apply below rated VCEO

"

for duty cycles to 10% provided T J(pkl"'1S00C. T J(pkl may be
calculated from the data in Figure 12. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed .by second breakdown .

2. 0

I

J

1.0

-

-

Secondary breakdown !tmlt \

Thermal hmlt at TC:= 25°C

JI

I I

.2

I I

o.1

2N6123.2N6126
10
20

5.0

2.0

1.0

J2N6121.2N6124

111~N6122.2N6125

tt- r1'~
100

50

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 12 - THERMAL RESPONSE

ffiN

1. 0

~ o. 7
..iiio o. 5

~

0-0.5

O.3

-

-::

0.2

~ O.2

f-'"':
-~
~

0.1
O. I
0.01 - 0.05
0.05
- 0.02
%
.... 0.03
>ffi 0.02 .......

~

Plpkl

t.Jl.JL

~

ffi

!

~

0.0 1""'>0.01

~~~

V

n

l-

I

b"

READ TIME AT q

TJ(pkl - TC" P(pkl ZOJC(II

DUTY CYCLE. 0" ,,/12

SljGtE rlLn j

0.02

z"JCIII " rill ROJC
ROJC " 3.12uC/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN

0.05

I

G.l

0.2

05

11111
10

2.0

5.0

10

I

I
2G

I I 111111
5G

100

I

J
200

l

I I I II
500

1.0 k

t, TIME (ms)

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

~~R~

n' n'

------II

---1

I

II

I

I

~

i

'-----

I

1---1/1 ---'----l

11
DUTY CYCLE D' 11·I"tp
PEAK PULSE POWER' Pp

A train of periodical power pulses can be r'epresented by the model
shown in Figure A. Using the model and the device thermal respo~se, the normalized effective transient thermal resistance of
Figure 12 was calculated for various duty cycles.
To find 6JCltl. mulliply ,he value obtained Irom Figure 12 by
the steady state value 8 JC.
Example:
The 2N6121 is dissipating 50 watts under the following conditions: t1 ~ 0.1 ms. tp = 0.5 ms. (D = 0.21.
Using Figure 12. at a pulse width of 0.1 m$ and D = 0.2. the
reading ofr(t1. DI is 0.27.
The peak rise in junction temperature is therefore:
"T = rltl X Pp X 6JC = 0.27 X 50 X 3.12 = 42.20C

1-244

®

2N6186
thru
2N6189

MOTOROLA

10 AMPERE

MEDIUM-POWER PNP SILICON TRANSISTORS

POWER TRANSISTORS
• PNP SILICON

· .. designed for switching and wide·band amplifier applications.
•

Low Collector-Emitter Saturation Voltage VCE(sat) ~ 1.2 Vdc (Max) @ IC ~ 10 Adc
• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact, High Dissipation TO-59 Case

SO-100VOLTS
60 WATTS

• Isolated Collector Configuration
• Complement to NPN 2N5346 thru 2N5349

-MAXIMUM RATINGS
Collector~Emitter

Rating

Symbol

Voltage

VCEO
Vce
VEe
IC
Ie

Collector-ease Voltage
Emltter-ea.e Voltage
Collector Current - Continuous
Base Current

Total Device Dissipation@ TC ~ 250 C

Po

Derate above 2SoC
Operating and Storage Junction
Temperature Range

TJ, T,tg

2N6186
2N6187

2N6188
2N6189

80
SO

100
100

Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mWf'C
°c

6.0
10
2.0
60
343
-65 to +200

STYLE I:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

I Symbol I
I 8JC I

I
I

Max
2.91

Unit
°elW

*lndTcate. JEDEC Registered Data.

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE

60

;n
l-

i

"'"i"-... ~

50

z

40

~
....
en

30

0

'"C
a:
w

3:

20

....0

....ci

10

20

40

DIM

"

........

.....

""

140
60
100
120
80
TC, CASE TEMPERATURE (OC)

B
C
E
G
H
J

11
L

N
p

........

Q

.......

160

~

180

200

R
S

T

MILLIMETERS
MIN
MAX

10.77
8.13
.2.29
4.70
10.16
14.48
2.29

4.14
1.02
8.08
4.212
9.65

11.10
11.89
3.81
5.46
1.98
11.56
19.38
2.79
6.35
4.80
1.65
9.65
4.310
11.10

INCHES
MIN
MAX
0.424 0.437
0.320 0.468
0.090 0.150
0.185 0.2 5
0.078
D.400 0.455
0.570 0.763
0.090 0.110
0.250
0.163 0.189
0.040 0.065
0.318 0.380
0.1658 0.1697
0.380 0.437

All JEDEC dimenSIons and notes apply

Collector isolated from cast.

CASE 160-03
TO-59

1-245

2N6186 thru 2N6189

*ELECTRICAL CHARACTERISTICS (TC = 25 0 C, unless otherwise noted)

I

I

Min

Max

80
100

-

-

100
100

2NS18S,87
2NS188,89

-

10
10

2NS18S,87

-

1.0

-

1.0

-

10

-

100

30
60
30
60
20
40

120
240

-

0.7
1.2

-

1.2
2.0

30

-

-

300

-

1250

-

100

Characteristic

Symbol

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 50 mAdc, IS = 0)
Collector Cutoff Current
(VCE = 75 Vdc, IS = 0)
(VCE = 90 Vdc, IS = 0)
Collector CUfoff Current
(VCE = 75 Vdc, VE8(off)
(VCE = 90 Vdc, VES(off)
(VCE = 75 Vde, VEB(off)
TC = 150°C)
(VCE = 90 Vdc, VBE(off)
TC= 150°C)

Vdc

VCEO(sus)
2NS18S,S7
2NS188,89
ICEO

"Adc

2NS186,87
2NS188,89

"Adc

ICEX
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc,

mAdc

= 1.5 Vdc,
2NS188,89

Collector Cutoff Current

"Adc

ICBO

(VCB = Rated VCB,IE = 0)
Emitter Cutoff Current
(VBE = S.O Vde, IC = 0)

"Adc

lEBO

ON CHARACTERISTICS (1)
DC Current Gain

-

hFE
2NSI86,88
2NS187,89
2N6186,88
2N6187,89
2N6186,8B
2N61B7,89

(lC = 0.5 Adc, VCE = 2.0 Vdc)
(lc = 2.0 Adc, VCE = 2.0 Vdc)
(lc = 5.0 Adc, VCE = 2.0 Vdc)

Collector-Emitter Saturation Voltage

-

Vdc

VCE(sal)

(lc = 2.0 Adc, IB = 0.2 Adc)
(lC = 7.0 Ade, IB = 0.7 Adc)

Base-Emitter Saturation Voltage

Vde

VBE(sal)

(lC = 2.0 Ade, IB = 0.2 Ade)
(lC = 10 Adc,lS = 1.0 Adc) ,

DYNAMIC CHARACTERISTICS
Current-Gain-Sandwidth Product (2)
(lC = 500 mAdc, VCE = 10 Vdc, ITest = 10 MHz)

MHz

IT

Output Capacitance

pF

Cob

(VCB = 10 Vdc, IE = 0, I = 100 kHz)

Input Capacitance

pF

Cib

(VBE = 2.0 Vde, IC = 0, f = 100 kHz)

SWITCHING CHARACTERISTICS
Delay Time

(VCC = 40 Vdc, VEB(off! = 3.0 Vde,

td

Rise Time

(lC = 2.0 Ade, IBI = 200 mAde!

tr

Storage Time

(VCC - 40 Vde, IC - 2.0 Adc,

ts

Fall Time

lSI = IB2 = 200 mAde!

If

ns

100

ns

2.0

ItS

200

ns

* Indicates JEOEC Registered Data.
(1) Pulse Tesl: Pulse Width ~ 300 !,S, Duty Cycle ~ 2.0%.
(2) IT = Ihlel. 'Test
FIGURE 3 - TURN-ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
2000

+11.6 V

--,

10~
INPUT

r

H---37V

...

,.
>=
--

w

...
B2

tr.tf-

:5

0;

z

<
c::

L.lJ

>-u

wZ
> <:

i=t;;

1.0
0.7
0.5

D - 0.5

0,3

0.2

0.2

SINGLE'fiJL
PULSE Plpkl

j

0.02

w"

<'"

I-

1l!>- 0.03

'"

,....f- ~

0.05

~ o. 1
w~
0< 0.07
N " , 0.05
::Ow

0.02
0.01
0.01

~~

0.01

......

SINGLE PULSE

......

II II

0.1

0.05

0.2

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpki - TC - Plpkl OJClti

DUTY CYCLE. D -,,/12

I
0.02 0.03

l1li

+-

OJCIII - rill OJC
8JC - 2.91° CIW Max
l
L

:;0..

?

0.1

~U;

tt:

z

0.3

0.5

1.0

2.0

3.0

5.0

! I

10

20

II i
30

50

I I I I I II
100

200 300

500

1000

t. TIME OR PULSE WIDTH Im,I

FIGURE 5 - ACTIVE·REGION SAFE OPERATING AREA
0

I! "

a

,.

ii: 5.0

>-

~

a'"
'"
0

~
S

1.0m,+

de

5

2.0 r---j-t-H-t-t-f-5.0

m,""

F=**i=~J-2000C I , 1'1

1.0

o. 5

:'1 i I

':"-"

~UlSE D1UTY I~CLIE" 10~

I

transistor must not be subjected to greater dissipation than the
curves indicate.

The data of Figure 5 is based on T Jlpk)

"

T J(pk) may be calculated from the data in Figure 4. At high

100 .

FIGURE 7 - CAPACITANCE ••rsus VOLTAGE

FIGURE 6 - TURN-OFF TIME

200a

'~-IB~ !

J,

1000 -

'c/'a - 10
TJ 25°C

1000

........
20a

........

No.
20 V

......

i'-......

100

0.2

0.3

-

700

z
<

500

w

......

Ij@VCC-BOV

>-

u

~

.........

1.0
2.0
3.0
0.5
'C. COLLECTOR CURR~NT IAMPI

LI

r-. ......

TJ ': 25°C

Cib

u

r-

r-

300

U

....

50

20
0.1

2000

i

50a

~

case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.

2N61aa. a9

I

2.0 3.0
5.0
20
30
50
10
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

TC is

are valid for duty cycles to 10% provided TJlpk) <200°C.

VCEO.
BEL:~W
2N61a6. a7
~~III!I~III~CURVESRATEDAPPLY

0.02
1.0

= 200°C;

variable depending on conditions. Second breakdown pulse limits

t,--1c--',~d-H.I

O. 1

~ 0.05

;::

sistor that must be observed for reliable operation; i.e., the

LlMIT~E:'o~~'~!I~

- - - - SECOND BREAKDOWN
- - - BONDING WIRE LIMITED
- - - - - THERMALLY LlMITED@TC- 250C

0.2

There are two limitations on the power handling-ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran·

1'-1

200

5.0

10

1-247

100
1.0

.......

....... ~b
2.0

3.0

5.0
10
20
30
VR. REVERSE VOLTAGE (VOLTSI

50

100

2N6190

®

thru

2N6193

-

MOTOROLA

5 AMPERE

MEDIUM-POWER PNP SILICON TRANSISTORS

POWER TRANSISTORS

· .. designed for switching and wide band amplifier applications.
Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 5.0 Amp

PNP SILICON

•

DC Current Gain Specified to 5 Amperes

•

Excellent Safe Operating Area

8().100 VOLTS
10 WATTS

•

Packaged in the Compact TO·39 Case for Critical Space Limited
Applications

•

• Complement to NPN 2N5336 thru 2N5339
*MAXIMUM RATINGS
Symbol

2N6190
2N6191

2N6192
2N6193

VCEO

80

100

Vdc

Coliector·Base Voltage

VCB

80

100

Vdc

Emitter-Base Voltage

VEB

6.0

Vdc

IC

5.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation@TC =25°C

Po

10

Watts

57.1

mWI"C

TJ. Tstg

-65 to +200

°c

Rating

Collector-Emitter Voltage

Collector Current - Continuous

Derate above 25°C

Operating and Storage Junction
Temperature Range

Unit

THERMAL CHARACTERISTICS
Characteristic

Max

Thermal Resistance, Junction to Case

17.5

*Indicates JEOEC Registered Data.

FIGURE 1 - POWER-TEMPERATURE DERATING

10

i

8.0

z

o 6.0

~

" '"

STYLE 1
PI N 1. EMITTER

r"-..

2 BASE
3 COLLECTOR

i'..

i:i
~

w
3t

DIM

~

A
B

"

4. 0

C
0

......

...o

~ 2.0

E
F
G
H

"

J
K

..........
............

40

80

120

160

200

L
M
P
Q

R

MilliMETERS
MI. MAX
8.89 9.40
'.00 8.51

6.10

INCHES
MAX

MI.

~
~
~
~

660

0.406 0.533
0.229 3.18
0.483
0.'
. . 3 5,33
0.711 0.864
D.77 1.02
12.10
635

~
~
~

~

-

460 NOM

1.21
90° NOM

2."

-

0'
0.100

i;
-

AIIJEDEC dimensions.nd notes apply.

Te. CASE TEMPERATURE (DC)

CASE 79·02

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

1-248

10-39

2N6190 thru 2N6193

• ELECTRICAL CHARACTERISTICS ITC = 250C unre.. othe,w;,. noted I
Characteristic

Symbol

Max

Min

Unit

OFF CHARACTERISTICS
Collector-EmltterSust8lnlng Voltage (1)
(Ie = 50mAdc,Ie '" 0)

VCEO(sus}
2N6190,2N6191
2N6192,2N6193

Collector Cutoff Current
(VeE" 75 Vdc, 'e .. 01
(VeE = 90 Vdc. 18 = OJ

80
tOO
/-lAde

'CEO
2N6190,2N6191
2N6192,2N6193

Collector Cutoff Current
(VeE'" 75 Vdc, VSEloffl = 1.5 Vdc)

100
100
/JAde

'CEX

(VeE = 90 Vdc, VSE(offJ '" 1 5 Vdc)

(VeE = 15 Vdc, VSE(offl = 1 5 Vdc,
TC"" 15QOCI
(VeE = 90 Vdc. VSEloffl = 1 5 Vdc,

2N6190.2NG191
2N6192.2N6193
2N6190, 2N6191

1.0

2N6192,2N6193

1.0

2N6190,2N6191
2N6192. 2N6193

10

10
10
mAde

TC = tSOOC)
Collector Cutoff Current
(Ves = 80 Vdc, Ie = 0)

/JAde

(VCB = 100 Vdc,le '" 0)

10

Emitter Cutoff Current
(VeE = 6.0 Vdc, Ie = 01

/JAde

100

!i

ON CHARACTERISTICS (1)
DC Currant Gain
(Ie = 500 mAde, VeE = 2.0 Vdc)

I'

2N6190, 2N6192
2N6191,2N6193
2N6190, 2N6192
2N6191.2N6193
2N6190,2N6192
2N6t9t,2N6193

(Ie = 2.0 Adc. VCE = 2.0 Vdc)
(lC = 5.0 Adc. VeE = 2.0 Vdc)

Ii

120
240

Collector-Emitter Saturation Voltage
(lC '" 2.0 Adc, 's = 0.2 Add
(lC = 5.0 Adc, '8 = 0,5 Adcl

0.7
1.2

Base-Emitter Saturation Voltage
HC a. 2.0 Adc, Ie = 0.2 Adc)
(lc = 5.0 Adc, IS = 0.5 Adc)

1.2
1.8

"'I
I:
Vdc

I

Vdc

I

I

DYNAMIC CHARACTERISTICS

Current-Gain·8andwidth Product <:ft.'
tiC = 0.5 Adc, VCE = 10 Vdc, trest = 10 MHd

MH,

Output Capacitance
(Vce'" 10 Vdc, IE '" 0, f = 100 kHz)

300

Input Capacitance
(Vse '" 2.0 Vdc, Ie = 0, f .. 100 kHz)

1250

II
II
I

SWITCHING CHARACTERISTICS

Delay Time
Rise Time

(Vee

40 Vdc, VSEloff) '" 3.0 Vdc,

Storage Time
Fait Time

1Vee '" 40 Vdc,

100

'e =- 2.0 Adc, ISl '" 0.2 Adc)

'Indlcates JEDEC Registered Data.
(1) Pulse Teu: PulseWidth!'E300 jJ.s, Duty
12) fT = I hfe"

.'

"'"
2.0

IC 2.0 Adc,
ISl = IS2 = 0.2 Adc)

~u

fTest

FIGURE 3 - TURN ON TIME
2000

+11.6 V

VCC

I

1000

-40 V

I

1--

62

37V

••

.

tr. tf<: 10ns
D.C. =1.0%

r

20

]:

.

, ,,

t;@IVCC-20V

......

w 200

......~

;::

S2

IC/IS = 10
TJ=25 0C

II

tr@VCC="80V

500

-U=0V

...

I

Cycle~2.0%

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

10",
INPUT
PULSE

I

100
0

IN914

lJjV.IT(Off)1 3."(

20
0.G5

+2.3 V

II II

0.1

I
0.2

0.3

0.5

1.0

IC. COLLECTOR CURRENT (AMP)

1-249

2.0

3.0

5.0

2N6190 thru 2N6193

FIGURE 4 - THERMAL RESPONSE
1.0

~

'="

z
«

LoW
o-u

>~

o.7
o. 5

0-0.5

0, 3

0.2

o. 2

5~
tt: ~

0, 1

0«

0.07

0.1

~

~

ffi

0.0 5
0.03

I-

~

0,02

SINGLE
PULSE

0.02

w~

«'"

::;0,

0.05

w~

W:e

+:

....-

-

SINGLE PULSE

0.05

0.1

TJ(pk)

0.3

0.5

2.0

1.0

3.0

5.0

II i

I I

II II

0.2

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT.,
TC - P(pk) 9JC(I)

OUTY CYCLE. 0 - .,/12

I
0.02 0.03

k)

t~

0.01

-E
0.0 1
0.01

'JlJl

l

9JCII) - ,II) 9JC
6JC == 17.5 0 eM Max

10

20

30

50

I I I I I II I
100

200 300

500

1000

t, TIME OR PULSE WIDTH (ms)

FIGURE 5 - ACTlVE·REGION SAFE OPERATING AREA
0

100
1.Oms

5. 0

'"'"5

i:

...

lA"'~

2.01--- I- del
0

5.0

m;;

....

'I. . . r--

"-

TJ - 20lJOC
SECONO BREAKOOWN LlMITEO
BONOING WIRE LlMITEO
THERMALLY LlMITEO@TC'250 C
PULSE OUTY CYCLE';IO%

5

-

2 ___ -

If;! o..1

There are two limitations on the power handling ability of 8
transistor: average junction temperature and second breakdown.

Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable ooeration; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.

The data of Figure 5 is based on. TJ(pk) ~ 200"C; TC is
. variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) < 200"C.
TJ(pk) may be calculated from the data in Figure 4. At high

r--

CURVES APPL Y BE~~

_ 0.05

.I

0.0 2

1

0.0 1
1.0

2.0

3.0

10

5.0

::~;~.~;6El~

case temperatures, thermallimitations w:iII reduce the power that
can be handled to values less than the limitaitons imposed by

1
2N6192.2N6193
20

second breakdown.
100

50

30

VCE. COLLECTOR·EMIITER VOLTAGE IVOLTS)

FIGURE 7 - CAPACITANCE versus VOLTAGE

FIGURE 6 - TURN-OFF TIME
2000
0::;
1000

IB1- IB2
IC IB-l0
TJ"250 C

r--

~

~.

ro .'

~

100

ts

500

!

2000

700

.......
i"-

200

20V

~@VCC

r---r-.

100

BOV

.r-.

500

1'-...

I

-

TI'2JOC

Jib

rt-...

300
200

t--.

0
20
0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

100
1.0

5.0

2.0

3.0

5.0

10

2

rt::
30

VR. REVERSE VOLTAGE IVOLTS)

IC. COLLECTOR CURRENT (AMP)

1-250

50

100

®

2N6211
2N6212
2N6213

MOTOROLA

2 AMPERE
MEDIUM-POWER HIGH-VOLTAGE
PNP POWER TRANSISTORS

POWER TRANSISTORS
PNPSILICON

· .. designed for high·speed switching and linear amplifier applications
for high·voltage operational amplifiers, switching regulators, convert·
ers, inverters, deflection stages and high fidelity amplifiers.

225-350 VOLTS
35 WATTS

• Collector· Emitter Sustaining Voltage VCEO(sus) = 225 to 350 Vdc @ IC = 200 mAdc
• Second Breakdown Collector Current Islb = B75 mAdc@ VCE = 40 Vdc
•

tf = 0.6 /.LS Resistive Fall Time

•

Usable DC Current Gain to 2.0 Adc

- u -I- 8 - -

P

4- ------t I

*MAXIMUM RATINGS
Symbol

Rating
Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCB

Emitter-Base Voltage

VEB

Collector Current

Continuous
Peak

Base Current

IB

Total Power Dissipation @ TC := 25°C
Derate above 25°C
Operating and Storage JUnction
Temperature Range

Po

Unit

225

I

300

350

Vdc

275

I

350

400

Vdc

.
..

IC

E

I 2N6212 12N6213

2N6211

I
I

6
2
5

1

.

35
0.2

..
...

-65 to +200

TJ, T stg

Vdc

Characteristic

I
Adc

°c

Symbol

I

Max

I

Unit

9JC

I

5.0

I

°CIW

FIGURE 1 - FORWARD BIAS SAFE OPERATING AREA

10
5.0

:'5

j
13

'"
0

~

2.0
1.0
0.5
0.2

"'l-

....

10ms
de
),J

- Bondmg Wire Limit
_ _ _ _ Thermal Limit

2oo",s
I ms.......

~.

"
'"
'" '" "

0.1
(Smgle Pulse)
80.05 _ _ _ _ Second Breakdown Limit
E
2N6211
0.02
2N6212
2N6213
0.01
20
100
10
50

a

H

Watts
W/oC

Indicates JEDEC Registered Data.

~

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE' COLLECTOR

Adc

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

SEATING PLANE

INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
8 11.94 12.70 0.470 0.500
6.35 8.64 0.250 0.340
C
D
0.71
0.B6 0.028 0.0 4
E
1.27
1.91 0.050 0.075
F 24.33 '4.43 0.958 0.962
4.83 5.33 0.190 0.210
G
H
2.41
2.67 0.095 0.105
J 14.48 14.99 0.570 0.590
K 9.14
0.360
P
1.27
0.050
Q
3.61
3.86 0.142 0.1 2
S
8.89
0.350
T
3.6B
0.145
U
15.75
0.620
All JEOEC Dimensions and and Notes. AppiV.
CASE 80-02
TO·66

There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second breakdown.
Safe operating arBa curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on T J(pkl

200

500

1000

= 200; TC

is variable

depending on conditions. At high case temperatures. thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown. (See
Figure 81.

VCE. COLLECTOR·EMITTER VOLTAGE {VOLTSI

1-251

2N6211,2N6212,2N6213

..

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unle.. otherwi.. noted)
Characteristic

I

Symbol

Min

Max

225

-

Unit

OFF CHARACTERISTICS
"Collector-Emitter Sustaining Voltage (1)
(lC = 200 mAde, IB = 0)

Vdc

VCEO(sus)
2N6211
2N6212
2N6213

·Collector-Emitter Sustaining Voltage
(lC = 200 mA, VBE = -1.5 V, L = 10 mH)

350

-

275
350
400

-

250
325
375

-

6.0
6.0

-

300

Vde

VCEX(sus)
2N6211
2N6212
2N6213

'Collector-Emitter Sustaining Voltage (1)
(lC = 200 mA, IB =0, RBE = 50 n)

Vde

VCER(sus)
2N6211
2N6212
2N6213

"Emitter-B... Braekdown Voltage 11)
(IE = 0.5 mAde, IC ·0)
(IE = 1.0 mAde,lC =0)

Vde

VEBO

2N6212/13
2N6211

·Collector Cutoff Current

ICEV

(VCE = 250 Yde, VBE(off) = 1.5 Vde, TC
(TC
(VCE = 315 Vde, VBE(off) = 1.5 Vde, TC
(TC
(VCE = 350 Vde, VBE(off) = 1.5 Vde, TC
(TC

= 25°C)
= 100°C)
= 25°C)
= 100°C)
= 25°C)
= 100°C)

Collector Cutoff CUrrent
(VCE = 150 Vde,IB =0)

All Types

·Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)

ICEO
lEBO

2N6211
2N6212
2N6213

--

-

mAde

-

0.5
5.0
0.5
5.0
0.5
5.0

-

5.0

-

-

1.0
0.5
0.5

10
10
10

100
100
100

-

-

1.4
1.6
2.0

-

1.4

mAde

mAde

"ON CHARACTER ISTICS (1)
DC Current Gain
(lC = 1.0 Ade, VCE = 2.S Vde)
(lC = 1.0 Ade, VCE = 3.2 Vde)
(lC = 1.0 Ade, VCE = 4'.0 Vde)

-

hFE
2N6211
2N6212
2N6213

Collectof·Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 125 mAde)

VCE(sat)
2N6211
2N6212
2N6213

Base-Emitter Saturation Voltage

All Type.

VBE(sat)

Vde

Vde

(lC = 1.0 Ade, IB - 125 mAde)
DYNAMIC CHARACTERISTICS
·Current Gain-Bandwidth Product (2)
(lC = 200 mAde, VCE = 10 Vdc, f test = 5.0 MHz)

Output Capacitance (Ves = 10 Vde, IE = 0, f = 1.0 MHz) .
",SECOND BREAKDOWN

(VCC = 200 Vde, IC = 1.0 Ade,
IBI = IS2

=0.125 Adc)

*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width" 300 jJ.S, Duty Cycle" 2.0%
FIGURE 2 -SWITCHING TIME TEST CIRCUIT

Output to Oscilloscope
(Tektronix Model No. 543A.

VSS=+6V
Input: Hawlen-Packard

rJiodel No. 214A.

or equlvaient

ijl"-+-+-w,,'----,
-= 100 jJ.F

Input from Pulse Ganerator
(Pulse Duration'" 20 loll.
Rep. Rate .. 200 Hz)

-Adjust RB for IB2 and RC for Ie,
.181 and IB2 measured with Tektronix Current
Probe P6019 and Type 134 Amplifier, or equivalent

1-252

2N6211,2N6212,2N6213

FIGURE 3 - DC CURRENT GAIN
300
200

z

:c

co

...

~
a
u

-

TJ = 160·C
26·C

FIGURE 4 - COLLECTOR SATURATION REGION

-

-'-

VCE" 2.0 V
-Vcp 10V

~~

30
20

-~

~

~'-

0.4

70 100
200 300
600 100 1.0 k
IC. COLLECTOR CURRENT (mA)

~8=

Ii 1100 j '

I If

°0.5

~ +2.0

/

Q

~'02

-

8

20

f

~

26°C

+0.2

+0.1

FORWARD

VCE" 200 V-=-

./

i550~ to\25jC\

-0.4

Ii'" -1.6 evB tor VBE
~
i -2.o ~
2.0

-0.5

30

-,550~1O r~c

I

60

100
,=200v==l

~

!...
~
a

"""

0

'"

~

200 300
5110 100 Uk
10 100
IC. COLLECTOR CURRENT (mA)

:--.. ....
r"-..

"'

60

co

z

~

w

~

,

'"
~
-0.1
-0.2
-0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)

2.0k

SEC~ND_h

BREAKDOWN DERATING

.........

"'"

TH~;::;ING

40

-0.4

........

.........
20

40

BO

BO

100

120

TC. CASE TEMPERATURE (OC)

1-253

....

.....

20

o
o

-0.6

.... r--..

~

Q

10 1

+0.1

~

\

FIGURE 8':" POWER DERATING

FIGURE 7 - BASE CUTOFF REGION

100
+0.2

-

250C 10 1160C

~ -1.0

w

-2.5

-0.1
-0.2
-0.3
VBE. BASE-EMITTER VOLTAGE (VOLTS)

-"

250C to i150C

+0.5 "evc tor VCE(IIU

~ -0.6

laD -

5110

200

"APPLIES FOR IC/IB" hFEl4

8

REVERSE

100

60

~+1.5

llJOOC

!J 10 I::!!!::

~

10

i'i: +1.0

: 103

'"

5.0

FIGURE 6 - TEMPERATURE COEFFICIENTS

jl04

'"u

I""'

l-

\

2.0

1.0

lB. BASE CURRENT (mAl

+2.6

.;'

\

...... t-

IIII ......

0.2

FIGURE 5 - COLLECTOR CUTOFF REGION

Ii;

600mA
260mA

~

2.0k

106

TJ'16ooC

\

'"

...

50

30

llIOOmA
160mA

~

.\.

~ I~

10
1.0
6.0

0.6

'"

~

....

3.0
20

~J "250\:

Q

;. 0.8

Q

~

~

~

100
r-- _:-560C
10
60

1.0

140

tBO

"'

110

200

2N6233
2N6234
2N6235

®

MOTOROLA

5 AMPERE

HIGH VOLTAGE NPN SILICON TRANSISTORS

POWER TRANSISTORS
NPN SILICON

. useful for high-voltage medium power applications such as
switching regulators.

225.275.325 VOLTS
50 WATTS

•

High Collector-Emitter Sustaining Voltage VCEO(sus) = 225 Vdc - 2N6233
275 Vdc - 2N6234
325 Vdc - 2N6235

•

DC Current Gain - hFE = 25 to 125 - IC = 1.0 Adc

•

Low Collector-Emitter Saturation Voltage
VCE(sat) = 0.5 Vdc (Max) @ IC = 1.0 Adc

•

High Frequency Response - fT = 20 MHz (Min)

•

Fast Switching Times @ 1.0 Adc tr = 0.5 J.ts (Max)
ts = 3.5 J.tS (Max)
tt = 0.5 J.ts (Max)

*MAXIMUM RATINGS
Rating

Symbol

2N623:3 2N6234 2N6235

Unit

VeEO

225

275

325

Vdc

Collector-Base Voltage

Vee

250

300

350

Vdc

Emitter·Base Voltage

VEe

Collector-Emitter Voltage

Collector Current - Continuous

Ie

Peak

Base Current
Total Device Dissipation
Derate above 2SoC

@

TC = 2SoC

-

6.0-

Vdc

_5.0_
_ 1 0 ___

Adc

Ie

-2.0_

Adc

PD

-50-0.286-

Watts

~AU-i

LX ~~_~=11----+--+

II

..

E
SEATING PLANE

K

I
STYLE 1
PIN I. BASE

wloe

--- F- -

Operating and Storage Junction

Temperature Range

-65, to +200

TJ. Tstg

1. EMITTER
CASE COLLECTOR

°e

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case
* Indicates JEDEC Registered Data.

FIGURE 1 - POWER TEMPERATURE DERATING

MILLIMETERS
MIN MAX
11.94 12.70
6.35 8.64
C
D
0.71
0.86
1.27
1.91
E
F 14.33 14.43
5.33
G
4.83
2.67
H 2.41
J 14.48 14.99
9.14
K
127
P
a 3.61 3.86
8.89
S
3.68
T
15.75
U

50

0

0

DIM

"""

""

B

f'...
f'-.

1'-..
!'....

0

'"

0

o
o

4{}

80

120

TC. CASE TEMPERATURE lOCI

160

"'"

""

INCHES
MIN MAX
0.470 0.500
0.250 0.340
0.D28 0.034
0.050 0.075
0.958 0.961
0.190 0.110
0.095 0.105
0.570 0.590
0.360
0.050
0.142 0.151
0.350
0.145
0.610

All JEDEC Dlmenslonsand aAd Notes Apply.

200

1-254

CASE 80-02

TO-66

2N6233,2N6234,2N6235

"ELECTRICAL CHARACTERISTICS ITC" 25°C un'e" othe'>

o.4

...'"

-:

0.5 01

0.3

1.0

0.5

...-

l-

t..-

/

II

5.0 1.0

'"~

-0.5

"

-1.0

~

l-

i

5.0 1.0

10

20

-1,5

J

/

d
l-I-

2Ho 10 c

·OVC for VCE(sat)

*
£!i

-3.0

3.0

III
III

w

·2.0

20

1.0

~++11r+r1~:EI3

~ 1.5
~ 1.0
G
0.5

8

I I 11111
o. 2 '-~CEI~t)~ 1~I:sl"151
0
0.2

G 2.5
'1. 20

g

Z

"aw

0.3

FIGURE 7 - TEMPERATURE COEFFICIENTS

-Tp 250C

iii 1.0
~

-

t-lB. BASE CURRENT lAMP)

,-

I I
I I

-

>

20

FIGURE 6 - "ON" VOLTAGE

1.2

I
I~A

\

\

IC. COLLECTOR CURRENT lAMP)

1.4

10A- -

;OA-

O.B

~

........
5.0

r--

/

-S50C to 25°C

h
J.....+'"

250lC10 1150 C

I--

-2.0
-2.5
0.2

OVB for VBE

I-

II
0.3

0.5 0.1

IC. COLLECTOR CURRENT lAMP)

-'

-550C to 250C

I I II
2.0

1.0

3.0

5.0 7.0

10

20

IC. COLLECTOR CURRENT lAMP)

RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN·ON TIME

3.0k
2.0k

.,.

VCC" 200 V.
ICIIS" 5.0
TJ"250C I - -

r--

tr

~

1.Ok

FIGURE 9 - TURN·OFF TIME

3.0k

700
500

"-

200 V
5.0
IS2
25°C

I\.

"-

~
;:; 1.0 k

,.;::

-

>= 200

30
0.02

Vce
Iclla IBI
TJ"

I,

2.0 k

;:;300
,.

100
10
50

10k
7.0k
5.0k

Id@VaElolI)" 5.0 V

-

700
500

If

"-

300
200
0.5

0.1

0.2

0.5

1.0

2.0

5.0

10

100
0.02

20

IC. COLLECTOR CURRENT lAMP)

0.05

0.1

0.2

t-..

V
0.5

1.0

2.0

IC. COLLECTOR CURRENT lAMP)

1-260

5.0

10

20

®

2N6274
thru
2N6277

MOTOROLA

HIGH-POWER NPN SILICON TRANSISTORS
designed for use in industrial-military power amplifer and
switching circuit applications.
•

High Collector Emitter Sustaining
VCEO(susl = 100 Vdc (Mini = 120 Vdc (Minl= 140 Vdc (Mini = 150 Vdc (Mini -

50 AMPERE
POWER TRANSISTORS
NPN SILICON

Voltage 2N6274
2N6275
2N6276
2N6277

100, 120, 140, 150 VOLTS
250 WATTS

•

High DC Current Gain hFE = 30-120@ IC = 20 Adc
= 10 (Mini @ IC = 50 Adc

•

Low Collector· Emitter Saturation Voltage VCE(satl = 1.0 Vdc (Maxi @ IC = 20 Adc

•

Fast Switching Times @ IC = 20 Adc
tr = 0.35 /lS (Maxi
ts = 0.8 /lS (Max
tf = 0.25 /lS (Maxi

•

Complement to 2N6377-79

'MAXIMUM RATINGS
Rating

Symbol

Cottector·Base Voltage

V
V

Collector-Emitter Voltage

Emltter·Base Voltage

ZN6Z74 ZN6Z75 ZN6Z76 ZN6Z77

140

160

180

Vdc

100

120

140

150

Vdc

V

Collector Current - Continuous
Peak

Unit

120

Ie

6.0

Vdc

50
100

Adc

Base Current

18

20

Adc

Total Device Dlsslpation@Tc==2SoC
Derate above 25°C

Po

250
1.43

Watts
wloe

TJ,T,tg

- - 6 5 to +200---

°e

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS
O1aracteristic

Thermal Resistance, Junction to Case
• Indicates JEDEC Registered Data.

FIGURE 1 - POWER DERATING
250

~

~z

I"

200

~ 150

~
ill

STYLE 1:
PIN 1. BASE

2. EMITTER

""'"

~ 100

~

E

......

"

50

o
o

" ""-

25

50

I'..

75
100
125
150
TC,CASE TEMPERATURE (OCI

'"
175

"

CASE. COLLECTOR
INCHES
MILLIMETERS
DIM MIN MAX
MIN
MAX
A 38.35 39.37 1.510 1.550
B 19.30 21.08 0.760 0.830
7.62 0.250 0.300
C
6.35
0
1.45
1.60 0.057 0.063
3.43
0.135
E
F
29.90 30.40 1.177 1.197
G 10.67 11.18 0.420 0.440
5.21
5.72 0.205 HI:!20
H
166
17.15 o.m 0.67!
J
K 11.18 12.19 0.440 0.480
Q
3.84 4.09 0.151 0.161
R 24.89 26.67 0.980 1.050

200

1-261

CASE 197·0'

2N6274 thru 2N6277
*ELECTRICAL CHARACTERISTICS

ITC = 25 0 C unless otherwISe noted 1

Characteristic

I

Symbol

Min

Max

100
120
140
150

-

Unit

OFF CHARACTERISTICS

Collector·Emltter Sustaining Voltage \1,

IIc = 50 mAde, IS

Vde

VCEOlsusl
2N6274
2N6275
2N6276
2N6277

= 01

Collector Cuteff Current

-

~Ade

ICED

IVCE = 50 Vde, IS = 01

2N6274

-

IVCE = 60 Vde, IS = 01

2N6275

-

50

IVCE = 70 Vde, IS = 01

2N6276

-

50

IVCE

= 75 Vde,

IB = 01

2N6277

Collector Cutoff Current

50

50

ICEX

-

IVCE = Rated VCB, VEBloffi = 1 5 Vdel
IVCE = Rated VCB, VEBloffl = 1.5 Vde, TC = 1500 CI

Emitter Cutoff Current

lEBO

10

~Ade

1.0

mAde

100

~Ade

IV BE = 60 Vde, IC = 01
ON CHARACTERISTICS (1)
DC Current Gain

-

hFE

IIc = 10 Ade, VCE = 4 0 Vdel
IIc = 20 Ade, VCE = 4.0 Vdel
IIc = 50 Ade, VCE = 4.0 Vdcl
Collector-Emitter Saturation Voltage

IIC

= 20 Ade, 18 = 2.0 Adel

IIc

= 50 Adc, IB = 10 Adcl

VCElsatl

Base-Emitter Saturation Voltage

IIc
IIc

=

50

-

30

120

10

Vdc

-

1.0
3.0
Vdc

VBElsatl

20 Ade, IB = 2.0 Adcl

18

-

3.5

VBElonl

-

1.8

Vde

IT

30

-

MHz

Cob

-

600

pF

tr

-

035

~s

ts

-

080

~s

tf

-

025

~s

= 50 Adc, IB = 10 Adel

Base-Emmer On Voltage

-

lie = 20 Ade, VCE = 4.0 Vdel
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)

lie

= 1 0 Adc, VCE

= 10 Vdc, f test = 10 MHz!

Output Capacitance
IVCB

= 10 Vde, IE = 0, f = 0 1 MHzl

SWITCHING CHARACTERISTICS
RIse Time
IVCC = 80 Vdc, IC = 20 Adc, IBl

= 2 0 Adc, VBEloffl = 5.0 Vdcl

Storage Time
IVec = 80 Vdc, IC = 20 Adc, IBl = IB2 =. 2 0 Adcl
Fall Time
(Vec = 80 Vdc,IC = 20 Adc, IBl = fB2 = 20 Adcl
Indicates JEDEC Registered Data
(1) Pulse Test
12) fT

~

Pulse Width ~ 300 J,JS, Duty Cycle ::::;;;;2.0%.

Ihfel.fte5t-

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

FIGURE 3 - TURN-ON TIME

2.0
VCC
+tiD V

3O"s~

+2:~~r=l_
-18. 5V

=r--[

Icllk =110 .=

1.0
0.7
0.5

Tr250~

/ ' td@ VSE(offi

RS
10 Ohms

]: 0.3

lN3879

O. 1

tr, tf" 10 ns
Duty Cycle = 0.5%

L

L

;;::....

~ 0.2

>=

:::=:: =::=

5.0V

L
i'..

t r @VCC=80V

.......""",

~

0,07
0.05

-4.0 V

0.03

Note: For informatIOn on Figures 3 and 6, RS and RC were
varied to obtain desired test conditions.

0.02
0.5

1·262

0.7

1.0

5.0 7.0 10
2.0
3.0
IC, COLLECTOR CURRENT (AMP)

20

30

50

2N6274 thru 2N6277

FIGURE 4 - THERMAL RESPONSE
1. 0

O.71--' - 0=0.5
O.5

....
;!
0:_

~ffi

I-N

o. 3

0.2

!2 ~ o. 2

"''''
~~

0.1

. . 0:

~~o.o 7~

~ ~O.O 5
~~

u.. ~O.03

:t cc 0.02

"'"

-~

0.05
0.02

O. 1

0: -

=-

..V

---

1--

~ iiiii

........ II1II

Tnn

p

P(pkl

L'

1tt=:2~

0.01

~IINGLEI PU~SE

II

0.0 1
0.02

0.05

I I I II

II

0.1

0.2

-

DUTY CYCLE, 0 -11/12

:;;:~

8Jc(ll- r(11 8JC
8JC=0.7·oCIWMox III
1_
o CURVES APPLY FOR POWE~_
PULSE TRAIN SHOWN
f- READ TIME AT 11
- fTJ(pkl- TC = p(pkI 8JC(II- f-

0.5

1.0

2.0

5.0
I, TIME Im'l

10

20

50

100

200

1000

500

2000

FIGURE S - ACTIVE REGION SAFE OPERATING AREA
100
0

~

0:: 20

dc~1

TJ - 200 0C

~1 0
~ 5.0

5.0

10

m;,

I-

There are two limitations on the power handling ability of a

1.0 :,-

transistor:

that must be observed for reliable operation; i.e .• the transistor

0: 2. 0
Second Breakdown Limited
:>
~~
'"
1. 0 - - - Bonding Wire Limited
0:
- - -- Thermally limited
5f==F @TC=250C(S,"glePuISflI~
. . . . O.
Curves Apply Below Rated BVCEO

~

must not be subjected to greater dissipation than the curves indicate.
The data of FigureS is based on T J(pkl = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for dutv cvcles to 10% provided T J(pkl .;; 200°C. T J(pkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

r==

J==t:::

o.
8 o. 1
.:lo.o5

0.0 2
0.0 1
2.0

average junction temperature and second breakdown.

Safe operating area curves indicate Ie· VeE limits of the transistor

~
2N6274
2N6275
2N6276
2N6277

3.0

5.0 7.0 10
20
30
50 70 100
VCE, COLLECTOR·EMIITER VOLTAGE (VOLTSI

200

FIGURE 7 - CAPACITANCE

FIGURE 6 - TURN·OFF TIME
10.00 0
7000
5000

5.0
3.0

r---1",1

2.0

-

1.0
]

0.1

IBI = IB2
IcllB = 10
TJ = 25 0C

Cib

3000

r-

~200 0 t - -

'"
'"z

~ 0.5

~

>=

r--...

0.2

......

r- ....

O. 1

100 0
70 0
;3 50 0

~

,....

Ij@VCC=80V

.: 0.3

./

0.7

1.0

5.0 7.0 10
3.0
IC. COLLECTOR CURRENT (AMPI
2.0

20

'-

U 30 0

V

200

0.07
0.05
0.5

J 25°C

30

50

1-263

100
0.1

0.2

0.5

10
20
5.0
1.0
2.0
VR. REVERSE VOLTAGE (VOLTSI

~
50

100

2N6274 thru 2N6277

FIGURE 9 - COLLECTOR SATURATION REGION

FIGURE 8 - DC CURRENT GAIN
1000
700

~CI

VCE -4.0~= ~ ~
---VCE=10V- r-- t-

SOO

G
w

2300

;;:
~ 20O
w

0::
0::

B

....CI

~

'"
~

-

TJ - +ISOoC

0
0

1:'- ...

+2SoC

-

100

SoC

'\ ~

0

O.S

0.7

1.0

2.0 3.0
S.O 7.0 10
IC. COLLECTOR CURRENT(AMP)

20

30

3.2

I I

- L.o'
C

2.4

~

2.0

~

1.6

_

1.2
0.8

III

CI

~

>

>~

3;

......:::

1.2

O.4

II

0
O.S

0.7

2.0
3.0
S.O 7.0 10
IC. COLLECTOR CURRENT (AMP)

1.0

20

II

ISOO~

-'

~
::>

IC = ICES

/J

30

./
/ . ./

~ +2.0

'OVC for VCE(sat)

iiit-

~VB f~r viE

~
50

-2.0
0.5 0.7

1.0

/
/ / ~'
/./

,

,/

....

1-'

2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMP)

20

30

50

FIGURE 13 - BASE CUT-OFF REGION

Tr 150 0 C
10 I

lO~oC

/

./
2SoC

J

'(f

+4.0

!;;:

1000C . /

/.

10

1/

VCE = 100V-

./

I I

- - - - -55°C to +25 0C
- - - +2SOCto+150oC

FIGURE 12 - COLLECTOR CUT-OFF REGION

TJ=

5.0

2.0

8

,

I

0.1
0.2
0.5
1.0
lB. BASE CURRENT (AMP)

G

~CE(..t) r-- ./~IC/:B.=lOl- I

VBE@VCE = 4.0 V

0.05

§ +6.0

/

I

V-

~B(E(.. t) @ IcllB = 10

o.8

+10

'"ffi +8.0

II

§

A

CI

0.02

.5

,J

w

......

"-

'Applies for ICIIB < hFE/41
1 il
1 I'
'1- I

8

/

~ 2.0

!3

+12

I
V

2! 1. 6

\

FIGURE 11 - TEMPERATURE COEFFICIENTS

TJ = 2SoC

2.4

~JUs!J

III
JJ~

IDA

.........

FIGURE 10 - "ON" VOLTAGES
2.8

J.ol ~

\

~ 0.4
....
>
0
0.01

50

A

2.8

o

'\

10

3.6

ffi

'~"

.~

30

4.0

0

-

VCE=IOOV_

./
I

./

250C
10-2

I

~Reirs.

10-2
-0.1

FOIWl'd........

o

+0.1
+0.2
+0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)

::;::R,verse
+0.4

1-264

10-3
-0.1

Forward

o

+0.1
+0.2
+0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)

+0.4

®

2N6282 thru 2N6284 NPN
2N6285 thru 2N6287 PN P

MOTOROLA
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS

. designed for general·purpose amplifier and low·frequency switching
applications.

1111

DARLINGTON
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60,80, 100 VOLTS
160 WATTS

•

High DC Current Gain @ IC = 10 AdchFE = 2400 (Typ) - 2N6282, 2N6283, 2N6284
= 4000 (Typ) - 2N6285, 2N6286, 2N6287

•

Collector· Emitter Sustaining VoltageVCEO(sus) = 60 Vdc (Min) - 2N6282, 2N6285
= 80 Vdc (Min) - 2N6283, 2N6286
= 100 Vdc (Min) - 2N6284, 2N6287

•

Monolithic Construction with Built·ln Base-Emitter Shunt
Resistors

*MAXIMUM RATINGS
Rating

Symbol

2N6282
2N6285

2N6283
2N6286

2N6284
2N6287

Unit

VeEO

60

80

100

Vdc

Collector-Base Voltage

VeB

60

80

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Ie

20
40

Adc

Collector·Emitter Voltage

Collector Current - Continuous

Peak
Base Current

IB

0.5

Adc

Total Device Dissipation @TC= 25°C

Po

160
0.915

Watts

WIDe

TJ,Tstg

-65 to +200

°e

Derate above 25°C
Operating and Storage Junction
Temperature Range

O~/
~~
I
'I

Thermal Resistance, Junction to Case

1:::+ ,
fyV

FIGURE 1 -POWER DERATING

1
z

120

0

100

::

80

...

40

;::

iii
i5
'"~
0

e

rs:

'" "

'1'..

"'

20
25

50

75

U

1

1

100

"""

125

TC, CASE TEMPERATURE 1°C)

150

""
175

r

C5(T

lG

\.S

MILLIMETERS
INCHES
STYLE 1
DIM MIN MAX
MIN MAX
PIN 1. BASE
A
•7
2. EMITTER
21.08
CASE COLLECTOR 8
0.830
C 6.35
7.62 0. 50 0.300
0
0.97
1.09 0.038 0.04~
1.40
1.78 10.055 0.070
E
F 29.90 30.40 1.1n 1.197
G 10.67 11.18 0.420 0.440
H 5.33
5.59 0.210 0.220
J 16.64 17.15 0.855 0.675
K 11.18 12.19 0.440 0.480
Q
3.81
4.19 0.1
0.165
R
26.67
1.050
U 2.54
3.05 0.100 0.120

-

-

60

o
o

ll\

H

* Indicates JEOEC Registered Data.

140

F ~J-

Otaracteristic

E

E~l
r-------

*THERMAL CHARACTERISTICS

160

JE"~=r

-

I

CASE1-04

200

1-265

i

:

NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO·3 OUTLINE SHALL APPLY.

I

2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP

*ELECTRICAL CHARACTERISTICS

(TC = 25 0 C unless otherwise noted)

O1aracteristic

Symbol

Min

Max

60

-

80
100

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

Vde

VCEO(sus)

(lC=O.l Ade,le=O).

2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287

Colieetor Cutoll Current

·mAde

ICED

(VCE = 30 Vde, Ie = 0)

2N6282, 2N6285

-

1.0

(VCE = 40 Vde, Ie = 0)

2N6283, 2N6286

-

1.0

(VCE = 50 Vde, Ie = 0)

2N6284, 2N6287

-

1.0

-

0.5

-

2.0

Collector Cutoff Current

mAde

ICEX

(VCE = Rated Vce, V8E(off) = 1.5 Vde)
(VCE = Rated Vce, VeE (off) = 1.5 Vde, TC = 1500 C)
Emitter Cutoff Current

IE80

5.0
mAde

(V8E = 5.0 Vde, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain

-

hFE

(lC = 10 Ade, VCE = 3.0 Vde)
IIc = 20 Ade, VCE = 3.0 Vde)

Collector-Emitter Saturation Voltage

750

18,000

100

-

-

2.0

Vde

VCE(sat)

IIc = 10 Ade, 18 = 40 mAde)

-

3.0

VeE(on)

-

2.8

Vde

VeE(sat)

-

4.0

Vde

Ihle l

4.0

-

MHz

-

400

-

600

300

-

IIc = 20 Ade, Ie = 200 mAde)

Base-Emitter On Voltage
IIc = 10 Ade, VCE = 3.0 Vde)

Base-Emitter Saturation Voltage
IIc = 20 Ade, IS = 200 mAde)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio
(lC = 10 Ade, VCE = 3.0 Vde, f = 1.0 MHz)

Output Capacitance

pF

Cob

(VCS = 10 Vde, IE = 0, I = 0.1 MHz)

2N6282, 83, 84
2N6285, 86, 87

Small-Signal Current Gam

hie

-

(IC = 10 Ade, VCE = 3.0 Vde, f = 1.0 kHz)
* Indicates JE DEC Registered Data.
(1) Pulse test: Pulse Width

= 300 JJ.S,

DutV Cycle

= 2%

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - SWITCHING TIMES
10
7.0
5.0

Vee

-30 V

=ts

2N6282/84INPN)
2N6285/87 IPNP)

-

RB & RC VARIEO TO OBTAIN DESIRED CURRENT lEVELS
01, MUST BE FAST RECOVERY TYPES, e.g:
MBQ5300 USED ABOVE 18 "" 100 rnA
MSD6100 USED BElOW IB "" 100 mA

_

V2

~~P~:~d~~---~ 1~
V,
APPROX

-12V

--I

,

lr,t,O;;:10ns

3.0

RC
SCOPE

2.0

]

:E
i=

51

~.

""- r--

--> ~

1.0
0.7

.... ""

0.5
+4.0V

25"

for ld and tr. 01
and V2 =0

IS

0.3 VCC = 30 Vdc
0.2 ICliB = 250
IBI = IB2
TJ = 25 0 C

disconnected

DUTY CYCLE = 1.0%

O. 1

0.2

For NPN test circuit reverse diode and voltage polarities.

1-266

0.3

0.5

.........

I- ' -

......... .......

ti~ C - t,

,...

'

-

.... ~

I- r-

..........Id@VBE(off)=OV
0.7 1.0
2.0
3.0
5.0
IC. COLLECTOR CURRENT (AMP)

7.0

i:= ~
10

20

2N6282. 2N6283. 2N6284 NPN.
2N6285, 2N6286, 2N6287 PNP

FIGURE 4 - THERMAL RESPONSE
1.0
~
O. 7~D =0.5
~_ O.5

--

wO

:z;w

:: ~ o.3~

0.2

'"'"
< ."..

lo~E_'.0
f= - 5.0mS~~!1111
~~c

1.0ms

5.0 I---

5.0ms

5o~~~~~I=m:m
!=--~ 0.1 ms

5.0 m:c

5.0

2'°I=t=!=tMi==t=~utW

2.0

l.o~.

2.0R=H:@l==t=HruW

0.5SS

1.0 _ _
0.5

0.58$

J "..;,;:oor"c'---4-H--I\t+l-H
0.21-+-H-iTh

0.2 f--+-H,T,-,J..,:"

':r.'r--.c'-----+--H+t+1tI

- _ SECOND BREAKDOWN LIMITED

0.1

_ _ SECOND IIREAKDOWN LIMITED

::-_-=~~~~~NAGL~::~T~~~~~TC~2!iOC ~

==t=t=t=

0.05
2.0

0.1

5.0

10

20

50

:-::::: ~~~~~~Gl ~:~~T~~~~~TC' 250C

0.05 §::EE8s§IN~GLJE~PU~LS~E:E::E3::HH§

SINGLE PULSE

100

2.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

10

20

50

100

VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)

I=t+t=++tl+==+=+fftff.ll

'.0~.
TJ't".,:;20;:.'".:.C_+-++-I+HJI
0.21-+-H-H
I- - - SECOND BREAKDOWN LIMITED
0.1
:-:_-_-:::~~~~~NAGl~:~~T~~I~~~TC 25°C

E.-

0.05 F=t=f=F:t-~I!IlGlE PULSE
2.0
5.0
10
20
50
100
VCE. COLLECTOR·EMITTER VOLTAGE IVOL TS)

There are two limitations on the power handling abilIty of a transIstor. average JunctIon temperature and second breakdown. Safe
operatIng ar~a curves Indicate IC - VCE limIts of the transIstor that must be observed for rel,able operatIon, I.e. the tranSistor must not
be subjected to greater dissipation than the curves indIcate.
The data of Figures 5, Sand 7 is based on T J{n..k ) = 200°C; T C is variable depending on conditIons. Second breakdown pulse limits are valid
for duty cycles to 10% provided T Jlpk)
200vC. T Jlpk) may be calculated from the data in Figure 4. At high case temperatures, thermal
limitations Will reduce the power that can be handled to values less than the limItatIons Imposed by second breakdown.

<

FIGURE 8 - SMALL-SIGNAL CURRENT GAIN
TJ 25'C
VCE=3.0V
IC ~ 10 A

z

5000

'"

~

2000

'-'

500

~
w

200

:l'

;;:

'":::>

--'
«

'"'"
~«

iii

1

1000

FIGURE 9 - CAPACITANCE

100 a

10,000

I-

-

-,

700
500

'-'

....

300

-- '--

::::::::: r-

U

«

100

5 200

50

<$

20
10
1.0

-

2.0

-

-

5.0

20

--.....
....

~\
"'-....

>,

"

r--. ~

"

- - - 2N62821841NPN)

2N6282184(NPN)
2N6285187 (PNP)
10

TJ~25'C

50

100

200

500

1000

f. FREUUENCY 1kHz)

100
0.1

111,mwl8JlP~p)
as 1.0 2.0

0.2

5.0

10

VR, REVERSE VOLTAGE IVOLTS)

1-267

20 Iso

100

2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP

I

NPN
2N6282.2N6283.2N6284

PNP
2N6285. 2N6286. 2N6287

FIGURE 10 - DC CURRENT GAIN
20,000
10,000
7000 f=TJ = 1500C
z 5000
to
./
to 3000

TJ = 1500C
10,000
7000
~ 5000
z
25 0C
~ 3000 -

r-

..

w
a:
a:

2000

~

..

,,

~

i"'"

'-25~

'"
'"
c

~

z

Z

:::>

-

30,000
I
20,000 VCE =3.dv·

I-VCE" 3.0 V

1000
700 ~-550C
500
......-J
300
200
0.2 0.3
0.5 0.7

:::>

2000

'"
c
'"

~

2.0

3.0

5.0 7.0

10

.\

~

. / -55°1J.,.

I"\,

,/
1000
700
500

'\,
1.0

r-

~

.....1

300
0.2

20

~
'\

0.3

0.5 0.7

IC,COLLECTOR CURRENT (AMP)

1.0

2.0

3.0

5.0 7.0

10

20

IC, COLLECTOR CURRENT (AMP)

,

FIGURE 11 - COLLECTOR SATURATION REGION

~o

~
w
to

~
o
ffi
::::
~
.c

'"
~....
8

3.0

I
I

2.6
IC = 5.0 A

~

w

to

15A

lOA

3.0

II
It

2.6

Tj=25 0C
15 A

IC=5.0A

~o

\.

\

1.S

-

~
a1
.c.

1.S

g
..

1.4

1\

o

\

1.4

1.0
0.5

o

\
0.7

2.0

1.0

3.0

5.0

7.0

20

10

30

50

> 1.0
0.5 0.7

I
V

..

1

2.0

1.0

3.0

5.0 7.0

10

20

30

2.0

'"

«
!:;
1.5 VSE(satl@ IcllB = 250
0
>
I I .L.J-..H>-

~

1.0

II

0.5 0.7

V

0

~
w

J

'"~
0

>
>-

...I....

L..

II
0.3

.....

1--1'-"

VaE@VCE=3.0V
1.0

2.0

50

VCE(sat)@lcli a=250_

11111111
5.0 7.0 10

3.0

V

J

Tj=25 0C
2.5

~

V II

w

0.5
0.2

.....

FIGURE 12 - "ON" VOL TAGES
3.0
Tj=25 0C

'"
~

r-r-.

la, SASE CURRENT (mAl

3.0

~

\

'-'
W
'-'

la, BASE CURRENT (rnA)

2.5

\

lOA

;;; 2.2

2.2

~

>

~o

TJ = 25 0C

2.0

l0.5
0.2

VaE@VCE=3.0V

I I
0.3

II

0.5 0.7

-

,... ....

II
1.0

2.0

3.0

1-268

V

.........
VCE(..,) @leila = 250

II II10

5.0 7.0

IC, COLLECTOR CURRENT(AMP)

IC, COLLECTOR CURRENT (AMP)

/

/

;

1,:::::::::'"

1. 5 V~E(r') @Iclla - 50
1.0

20

/

20

2N6282, 2N6283, 2N6284 NPN,
2N6285, 2N6286, 2N6287 PNP

I

NPN
2N6282,2N6283,2N6284

PNP
2N6285,2N6286,2N6287

FIGURE 13 - TEMPERATURE COEFFICIENTS

+!i.0

+!i.0

G
>

III

E +3.0
f!'

15

+2.0

~

+1.0

U

2w
'":::>
!;;:

~

III
2S oC to 1S0 0C

/

-1iS oC to +2S oC

-1.0

III
.1-1"

'eVC for VCE(sat)

-2.0

2S oC to +1S0 0C....

11] -3.0
>-

i

~

'APPLIES FOR ICIIS'; hFE/2S0

!<.. +4.0

/
~><

0.3

I II

1.0

2.0

3.0

E5

J

U

/

o

+2.0

w

a:

~ii'

:

-I-

-1.0 'evC for VCE(sat)
-2.0

>-

i

2S oC to +1S0 0C

II

evs for VSE
-4.0
-S. 0

20

10

/

-Ssoc to +2S OC

11] -3.0

II

/

2S OC to lS00C

~ +1.0

u

t>-

S.O 7.0

A
'/

f!'

-550C to +25 0 C

O.S 0.7

'APPLIES FOR Ic/ls'; hFE/2S0

.§. +3.0

/
-,,/r

......

eVS for VSE
-4.0
-S.O
0.2

/

/

+4.0

0.2

0.3

O.S 0.7

IC. COLLECTOR CURRENT (AMP)

-l-

II

1.0

2.0

I--"

't/'

I-

./

- I--"

:,/

....~

.....

3.0

-SSoC to +2S oC

I II10

20

S.O 7.0

IC. COLLECTOR CURRENT (AMP)

FIGURE 14 - COLLECTOR CUTOFF REGION

lOS

«
.3-

104

~
a:

10 3

103

-

/

VCE-30V

I--VCE-30V

/

~TJ lS00C

>-

a:
0

102

~

tOl

>-

0

L

1/

1

r--TJ -lS00C

:::>

u

/
/

-

/

100 0C

f-- r-100 0C

u

~REVERSE

~

~REVERSE

. iORWARO

100

10-2

r---t- 2S oC
10-1
-0.6

-0.4

-0.2

+0.2

+0.4

+0.6

+0.8

+1.0

+1.2

+1.4

FORWARD

~2S0C

10-3
+0.6

+0.4

+0.2

VSE. SASE·EMITTERVOLTAGE (VOLTS)

-0.2

-0.4

-0.6

FIGURE 15 - DARLINGTON SCHEMATIC

Collector

NPN
2N6282
2N6283
2N6284

r----- -I
I

Collector

PNP
2N628S
2N6286
2N6287

---.,

.--_ _~~

I

I
I
I
I
I

I
Base
I

I

I
I

IL _ _ _ _ _ _ _

-0.8

VSE. SASE·EMITTERVOLTAGE (VOLTS)

---.,
...----+-.., f

I
I
I
I

Sase

I

I

I

I

I
I

I

IL

__ .J

Emitter

______ _

Emitter

1-269

I
I

__ .J

-1.0

-1.2

-1.4

2N6294, 2N6295 NPN
2N629,6, 2N6297 PH P

®

-....------DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS

... designed for general·purpose amplifier, low·frequency switching
and hammer driver applications.

MOTOROLA

4 AMPERES
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60,80 VOLTS
50 WATTS

• High DC Current Gain hF E = 3000 (Typ) @ IC = 2.0 Adc
• Low Coliector·Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 2.0 Adc
• Collector· Emitter Sustaining Voltage
VCEO(sus) = 60 Vdc (Min) - 2N6294, 2N6296
= 80 Vdc (Min) - 2N6295, 2N6297
• Monolithic Construction with Built·1 n Base·Emitter
Shunt Resistors

*MAXIMUM RATINGS
Symbol

2N6294
2N6296

2N6295
2N6297

Unit

VCEO

60

80

Vde

Coliector·Base Voltage

VCB

60

80

Vde

E mitter·8ase Voltage

VEB

5.0

Vde

IC

4.0
8.0

Ade

Base Current

IB

80

mAde

4C

TotaIOevieeOissipation@TC=250C
Derate above 2SOC

Po

50

Watts

0.286
TJ, T stg

-65 to +200

wf'c
°c

E
SEATING PLANE

Rating
Collector·Emitter Voltage

Collector Current - Continuous

Peak

Operating and Storage Junction,

P

I

'I

--u-B--

A
______
_

STYLE I:
PIN I. BASE
2. EMITTER

Temperature Range

THERMAL CHARACTERISTICS

I

Characteristic

Thermal Resistance, Junction to Case

R

·tndlcates JEOEC Registered Data

j

FIGURE 1 - POWER DERATING
50

S

........,
~

DIM

I"'"
0

~

-

.......

"BO

11.94 12.70 0.470 0.500
6.35 B.64 0.250 0.340
0.71 0.86 0.028 0.034
1.27 1.91 0.050 0.075
F 24.33 24.43 0.958 0.962
G 4.83 5.33 0.190 0.210
2.41
2.67 0.095 0.105
H
J 14.48 14.99 0.570 0.590
0.360
K 9.14
P
1.27
0.050
Q
3.61
3.86 0.142 0.152
8.89
0.350
S
3.68
0.145
T
U
15.75
0.620
All JEDEC Dimensionsand and Notes Apply.
C
D
E

"" "
40

INCHES
MIN
MAX

B

0

o
o

MILLIMETERS
MAX
MIN

120

160

~
200

TC. CASE TEMPERATURE (OC)

-

CASESO'()2
TO-66

1-270

2N6294, 2N6295 NPN/2N6296, 2N6297 PNP

*ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)

I

I

Characteristic

Symbol

Min

Max

60
80

-

-

0.5
0.5

Unit

OFF CHARACTERISTICS
Colieetor-Emitter Sustaining Voltage
(lC = 50 mAde. IB = 0)
Coliector Cutoff Current
(VCE = 30 Vde, IB = 0)
(VCE = 40 Vde, IB = 0)

Vde

VCEO(sus)
2N6294. 2N6296
2N6295,2N6297

mAde

ICED
2N6294, 2N6296
2N6295,2N6297

Coliector Cutoff Current
(VCE = Rated VCB,VEB(off)
(VCE = Rated VCB, VBE(off)
(VCE = Rated VCB, VEB(off)
TC = 150o C) .
(VCE = Rated VCB, VBE(off)
TC = 15oDC)

-

mAde

ICEX

= 1.5 Vde)
= 1.5 Vde)
= 1.5 Vde,

2N6294,2N6295
2N6296, 2N6297
2N6294.2N6295

-

0.5
0.5
5.0

= 1.5 Vde.

2N6296. 2N6297

-

5.0

-

2.0

750
100

18000

-

2.0
3.0

-

4.0

-

2.8

4.0

-

-

120
200

300

-

Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)

lEBO

mAde

ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 Ade. VCE
(lC = 4.0 Ade, VCE
Coliector~E mitter

(lC
(lc

(lC

Saturation Voltage

Saturation Voltage

= 4.0 Ade,

IB

Vde

VCE(sat)

= 2.0 Ade, IB = 8.0 mAde)
= 4.0 Ade, IB = 40 mAde)

Base~Emitter

-

hFE

= 3.0 Vde)
= 3.0 Vde)

VBE(sat)

= 40 mAde)

Base-Emitter On Voltage
(lC = 2.0 Ade. VCE = 3.0 Vde)

Vde
Vde

VBE(on)

DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
(IC

= 1.5 Ade,

VCE

= 3.0

Vde, f

= 1.0 MHz)

Output Capacitance
(VCB

= 10 Vde, IE = 0, f = 0.1

-

Ihfel

Short-Circuit Forward Current Transfer Ratio

pF

Cob
MHz)

Small-5ignal Current Gai n
(lC = 1.5 Ade, VCE = 3.0 Vdc, f

2N6294. 2N6295
2N6296. 2N6297
hfe

= 1.0 kHz)

-

*Indicates JEDEC Registered Data

FIGURE 2 - SWITCHING TIMES TEST
CIRCUIT

FIGURE 3 - SWITCHING TIMES

5.0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC
-lOV

3.0
2.0

I,

I~R~:~~oV -

Ir

Re

IBI = IB2 Tr250 C-

Is

~

1.0

9:

V2

'!::~:--[J~~~-~__ 1~
VI
IpproX __

-12V

I

I

25.,

i

0.7
0.5

~~ o. 3

51

..... ~::--.

If

O. 2

O.

for ld and tr, D1 is disconnected

1;::: ---2~

0.0 7f=
0.0 5

and V2"'O

t,-, If C;;; 10ns
DUTY CYCLE' 1.0%

0.04 O.OS

For NPN test circuit, reverse all polarities.

1-271

....

---

~E(Off)I-OI- ~

94.2N6295 (NPN)
2NS296,2N6297 (PNP)
0.1

0.2
0.4 O.S
1.0
IC. COLLECTOR CURRENT (AMP)

2.0

4.0

2N6294, 2N6295 NPN/2N6296, 2N6297 PNP

FIGURE 4 - THERMAL RESPONSE

...

ili

"'~~
... N

!Z~

w,"

1.0
0.7 =0=0.5
o.5

O.3 - f-0.2
O.2 - ~.!.-

200

CZ

",-

:1)

>20

-

fi~ 0.05
3~m 0.0

t:;'"

~

0.05
0.02

O. 1

:~ 0.07

:=.

INGLE
PULSE

0 CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAoTIMEAT'1

~

o.oi

t'2j

TJ(pk)-Tc=P(pkIReJclt)

DUTY CYCLE, D = '1/12

0.0 2

0.0 1
0.01

ReJc(') = ,(dOJC

t~eJC -3.SDCIWMax

0;'"

II II
0.02

0.05

0.1

0.2

1.0

0.5

2.0
I,TIME

10

5.0

II III
20

50

100

200

500

1000

(m~

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA

10
5.0

10o!'S

,

~

~

L'\~~m
de "'

,. 2.0
~

Si

1.0

'"
:::>

0.5

~

~

'f..

iJS

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be ObseNSd for reliable operation; i.e., the transistor

~s

TJ=200DC
BONDING WIRE LIMITED
!--'" 0.2 (------THERMALLy L1MITED@TC=25 DC
(SINGLE PULSE)
j o. 1~,
SECOND BREAKDDWN LIMITED
CURVES APPLY BELOW
80.05
RATED BVCEO
~
2N6294, 2N6296
0.02
2N6295, 2N6297
0.0 1
1.0
2.0 3.0
5.0 7.0 10
20
3D
50
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200; T C is variable

'"

~

depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(pk)"; 200. TJ(pk) may be

I

calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

I II

70

100

FIGURE 6 - SMALL-SIGNAL CURRENT GAIN

FIGURE 7 - CAPACITANCE

4000
2000
:!el000

'"...'"z

300
I TJ=~5Dcl
VCE = 3.0 V
IC = 1.5 A

200

I""

~

w

SOD

'"20

j:! 100

U

'":::>

;t
200

~

\

100

20

....

40 SO 100 200 400 600 1000 2000
f, FREIlUENCY (kHz)

--~

......

50

- - - 2N6294, 2NS295 (NPN)
2N629S, 2N6297 .IPNP)
10

70

",'

\
60
40
4.0 S.O

- -

u.

::!400

i'"

TJ = 25 DC

....

- --2NS294,2N6295 (NPN)

r.....
Cib

--

~qb

i2y2jS'I21Ntlii71PNPl
4000

1-272

3D
0.1

1

0.2

0.5

5.0
10
20
1.0
2.0
VR, REVERSE VOLTAGE (VOLTS)

50

III

100

2N6294, 2N6295 NPN/2N6296, 2N6297 PNP

NPN

PNP

2N6294. 2N6295

2N6296. 2N6297
FIGURE 8 - DC CURRENT GAIN

20.000

10.000

r-

.....

VCE =IJiOI V

10.000

f=

7000
5000

~

«

5000

TJ -150 0

z 3000

z

'"

a:

25

TJ

...... ~

y

..........

~

-55°C

300

l../I

200

V
0.1

'"

500

c

V

200
0.04 0.06

25°C ...... V

u

-550 C

V

~

~ 1000

........'\

.....

::>
u

~ 700

500

150 0 C

VI

ill

V

1000

300

-

'"
2000
f-

'\

~ 2000

~

_VCE-3.0V

;j'

~ JOOO

::>
u
~

....... ......

0.2

0.4 0.6
1.0
IC. CO~LECTOR CURRENT lAMP)

2.0

I I

~
100
0.04 0.06

4.0

0.1

2.0

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT lAMP)

4.0

FIGURE 9 - COLLECTOR SATURATION REGION

in 3.0
!::;
c

I I II

?

~

;

'"
~

IC= LOA 2.0 A
2.5

\

~ 3.0

TJ = 25°C

?

\

;'"

w

\

2.0

i

I\,

'"

2.0

~

1.5

'"
g

1.0

_

1. 0

I'..

u

TJ=250C

\ 3.0 A

\
\

i

~ 1. 5

~
;5

\

2.0 A

IC = 1.0 A

2.5

'"ffi
::

\

::

J II II

c

3.0 A

~

\..

'-

'"uul

ul
u

u

> 0.5

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

20

> 0.5
0.2

0.3

0.5 0.7

lB. BASE CURRENT (rnA)

2.0 3.0
5.0
1.0
lB. BASE CURRENT ImA)

7.0

10

20

FIGURE 10 - "ON" VOLTAGES

2.0
1.8

~

1111

r-

/,

TJ = 25°C

'"~

VaEI,,') @Ic/la = 250
1.2

/

I

)CEII"~) ~II~/IB = 250

0.6
0.04 0.06

I
0.1

./'

V

?

!::;

/

'"
;:-

1.0
0.8

2.0

/

1J JlL
~ IC~IB = 250

i"'"

-

w

4.0

1-273

/

VBE@VCE=3.0V

/
,/

I IILL
I 11111

I

V~EI~,I) JIC~IB = 250

I IIII1
0.6
0.04 0.06
0.1

I
0.4 0.6
1.0
0.2
Ic. COllECTOR CURRENT lAMP)

)

III

1,4 VBEI;.,I)

~ 1.2

/

'"
>
VaE @VCE = 3.0 V
>- 1.0
I 1-1-11
0.8

~o

--== ===='

I

11111

1.6

,

~ 1.4

I

1.8 -r--1Tj =12 5;C
1

//

1.6

w

2.0

/1

,.....

V

>--

I
0.4
0.6
1.0
0.2
IC. COLLECTOR CURRENT lAMP)

2.0

4.0

2N6306,2N6307,2N6308

®

MOTOROLA

HIGH VOLTAGE NPN SILICON POWER
TRANSISTORS
8 AMPERE
POWER TRANSISTORS

· .. designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching
power supply applications in associated consumer products.
•

High Collector-Base VoltageVCB = 500 Vdc - 2N6306
= 600 Vdc - 2N6307
= 700 Vdc - 2N63OB

•

Excellent DC Current Gain @ IC = 3.0 Adc
hFE = 15 - 75 - 2N6306, 2N6307
= 12 -60 - 2N63OB

•

Low Collector-Emitter Saturation Voltage @ IC = 3.0 Adc
VCE(sat) = 0.8 Vdc (Max) - 2N6306
= 1.0 Vdc (Max) - 2N6307
= 1.5 Vdc (Max) - 2N63OB

•

Current Gam
. Ban d WI'd t h Pro ductiT = 5.0 MHz (Min) @ IC = 0.3 Adc

NPN SILICON
250-300-350 VOLTS
125 WATTS

*MAXIMUM RATINGS
Rating

Symbol

2N6306

2N6307

2N6308

Unit

Collector-Basa Voltage

VCB

500

600

700

Vdc

Collector-Emitter Voltage

VCEO

350

VEB

.

Vdc

Emitter-Base Voltage

.

300

8.0
16

•

Adc

4.0

•

250

IC

..

Base Current

IB

Total Device Dissipation @ T C = 2SoC
Derate above 25°C

•

Po

Collector Current

Continuous

8.0

Peak

Operating and Storage Junction

.

TJ,Tstg

125
0.714

-

Adc
Watts

WloC

_ _ -65 to +200 _

°c

Characteristic

I

Symbol

I

Max

Unit

I

8JC

I

1.4

°C/W

"'Indicates JEOEC Registered Data.

1=

100

"-

""-

"

!.
z
0

>=
;t

~

~

75

" r-.... r-...
"'-

25

0

PIN
:~~iTER
CASE COLLECTOR

Q~~LV
H

1\-----49-

1 ~'/
+

:

I

1
R

loJ

40

NOTES,
1. DIMENSIONS 0 ANO V ARE DATUMS.
2. [JJ IS SEATING PLANE AND OATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE U,

I .1'·131O.005)@T I V@I U@I
4. DIMENSIONS AND TOLERANCES PER
ANSI Y14.5. 1973.

50

0

J -

80

MILLIMETERS
MIN MAX
39.37
B
21.08
e 6.35 7.62
D
0.97
1.09
E
1.40
1.78
F
30.15 SSC
G
10.92 SSC
H
5.46 SSC
J
16.89 BSC
K 11.18 12.19
Q
3.81
4.19
R
26.67
U
4.83
5.33
V
3.81
4.19

DIM
A

'"~

~

i

F -

L

1·1··1310.005)@ITIV@1
FOR LEADS:

FIGURE 1 - POWER DERATING

;;;

r---

u

Thermal Resistance, Junction to Case

125

r;~!

Vdc

Temperature Range

I

LIF'"~-f

120

TC, CASE TEMPERATURE lOCI

160

""-

""

200

1-274

CASE 1·05

INCHES
MIN MAX
1.550
0.830
0.250 0.300
0.038 0.043
0.055 0.070
1.187 SSC
0.430 SSC
0.215 sse
0.665 SSC
0.440 0.480
0.150 0.165
1.050
0.190 0.210
0.150 0.165

2N6306,2N6307,2N6308
"ELECTRICAL CHARACTERISTICS ITe = 25°C un'''' otherw,.. noted)

I

I

Ch........istic

Symbol

Min

M...

250
300
350

-

Unit

OFF CHARACTERISTICS
CoUector·Emitt.r Sustaining Voltage (1 I

Collector Cutoff Current
IVCE = Rated VCEO. 'S

2N6306
2N6307
2N630S
'CEO

=0)

Collector Cutoff Current
IVCE::: 500 Vdc, VEBloff) = 1.5
IVCE = 600 Vde. VEBlofl) = 1.5
IVCE = 700 Vde. VEBlofl) = 1.5
(VeE = 450 Vdc, VEBloff) ::: 1.5
Te = 150°C)
IVeE = 550 Vde. VEBloff) = 1.5
TC = 150°C)
(Vee::: 650 Vdc, VEBloff)::: 1.5
Te = 150°C)

Vdc

VCEO(susl

lie'" 100 mAde, '8'" 0)

'CEX

mAde

-

0.5
mAde

Vdc)
Vde)
Vdc)
Vdc,

2N6306
2N6307
2N6308
2N6306

-

0.5
0.5
0.5
2.5

Vde.

2N6307

-

2.5

Vdc,

2N6308

-

2.5

-

1.0

15
12
40
3.0

75
60

Emitter Cutoff Current
IVSE = 8.0 Vde.
= 0)

'ESO

'e

mAde

ON CHARACTERISTICS
DC Current Gam (1)
(Ie::: 3 0 Adc, VeE = 5.0 Vdc)

2N6306. 2N6307
2N6308
2N6306. 2N6307
2N6308

lie '" 8 0 Adc. V CE ::: 5.0 Vdc)
Collector-Emitter Saturation Voltage t 1)
(Ie::: 3.0 Adc, '8'" 0.6 Add

Vde

veE (satl
2N6306
2N6307
2N6308
2N6306. 2N6307
2N6308

(Ie'" 8 0 Adc, '8 '" 2.0 Adc)
(Ie::: 8.0 Adc, '8 = 2 67 Add

Base-Emitter Saturation Voltage (1)
(Ie'" 8.0 Adc. '8'" 2.0 Add
lie::: 8.0 Adc, '8 '" 2 67 Adc)

0.8
1.0
1.5
5.0
5.0
Vde

VaEIsat)
2N6306. 2N6307
2N630B

Base-Emitter On Voltage (11
(Ie =' 3.0 Adc, V CE '" 5.0 Vdc)

2.3
2.5

Vde

VaE(on)

2N6306.2N6307
2N630B

Second Breakdown Energy IFlgure 2)
(iC(PK) '" 3.0 Adc, L = 40 mH, ABE'" 3 k.U, VSB2 '" 1 5 Vdc)

1.3
1.5
mJ

Es/b
180

DYNAMIC CHARACTERISTICS
Current Gam - BandWidth Product (2)
(lC '" 0 3 Adc, VeE =- 10 Vdc, f test '" 1 0 MHz)

fT
5.0

Output Capacitance
(Ves =' 10 Vdc, IE '" 0, f '" 0 1 MHz)

OF

Cob

250

SWITCHING CHARACTERISTICS
Rise Time

t,

(Vce = 125 Vdc, le:- 30Adc,IS

=

~s

06AdcJ

0.6

Storage Time (3)
(Vee'" 125 Vdc. 'e = 30 Adc, 'B1 '" 06 Adc, 182'" 1 5 Adcl
Pulse Width'" 25 J.l.S

ts

~s

16
08

Pulse Width'" 5 0 jJS

Fall Time

tf

(Vee'" 125 Vdc, Ie
(t)

~s

0.4

= 3 0 Adc, IS1 = 0.6 Adc, 'B2 '" 1 5 Add

Pulse Test Pulse Width ~300 jJS, Duty Cycle'" 2 0%

(2) fT'=

I hfe I • f test

(3) "On" time IS 25 lots ts decreases With shorter pulse Widths, being approximately 50% of the values shown at a 5 0 jJs pulse Width
"ndlcates JEDEC Registered Data

FIGURE 2 - SECOND BREAKDOWN ENERGY TEST CIRCUIT AND WAVEFORMS

-I

r

tw =40ms

,

r--I I
VOlTAGE_LJ
L--.l

INPUT 0 ' 1

-5.0V-~100ms---t

50

Vce

~ 20 V ~ ~C MONITOR

RS

Note A : Input pulse Width IS II1creased untlllC(PKl = 3

~

[J'

BVCEX-:-_II--

1-275

----1--1 ,_

I

I

COLLECTOR I
VOLTAGE
I

I

20 V

I

VCE(satJ-

aA

!

I
I
INo" AI
I
I
ICIPKI"30A~1------T---COLLECTOR
I
I
I
I
CURRENT 0
I ,
I I

I

2N6306,2N6307,2N6308

FIGURE 3 - THERMAL RESPONSE
1.0
0.7
0.5

,
-.-'"

0.3
0.2

9JC(t)= ,(t)6JC
n~
6JC = 1.4oCIW Max
o CURVES APPLY FOR POWER_
PULSE TRAIN SHOWN
READ TIME ATll

-

all
0=0.5

0.1
0.07
0.05

, .,
,

0.03
0.02

pf0LSL -=

rr 0.2
0.1
0.05
0.02
0.01
SINGLE PULSE

0.05

01

0.2

0.3

0.5

-

=
-

-t~j

-

pUITY fYfL~, 0' !J/t2

0.01
0.02 0.03

-

TJ(pk) - TC' P(pk) 9JCh)

10

2.0

3.0

5.0.

10

t, TIME

20

30

100

50

200

300

500

1000

2000

1m.)

FIGURE 4 - ACTIVE-REGION SAFE OPERATING AREA

"-

::E
~
IZ

1.0m.

1.0

w
a:
a:

0.5

'"
:5

0.2

::>

....

20
10
5. 0

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le·VeE limits of the transistor
that must be observed for reliable operation; Le., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) ;::: 2000 C;TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) ~200oC. T J(pk) may be
calculated from the data in Figure 3. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

1.0

-~

0.1 =§
_ . _ BONDING WIRE LIMITED
g 0.05=
_____ THERMALLYLIMITED@TC=250C
-

0.01
0.005
0.002
5.0 7.0

2N6306
2N6307
2N6308.

Cu,ves Apply Below
Rated VCEO
10

20

30

50

70

100

200

300

500

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 5 - SWITCHING TIMES TEST CIRCUIT

FIGURE 6 - TURN-ON AI\ID TURN-OFF TIMES
5.0

VCC 125 V
RC

41

+8.2 V

1.0

V~1:...!.5~s

C,'+

TJ , 25 0

3.0
2.0

:g

0.7

:11

0.5

-

;::

.: 0.3

-17 V

51

VCC,125 V
ICIIB1' 5.0
ts

t,

J-.

O. 2

-....: r-- ...

DUTY CYCLE 1%
10 ns
01 -IN3879
COLLECTOR-8ASE JUNCTION

I"

t,,,

0.0 7
0.0 5

FOR DATA IN FIGURE 6,
RB & RC ARE VARIED TO OBTAIN
DESIRED TEST CONDITIONS. 01
OMITTED AND V2 REDUCED TO
5.0 V FOR Id and t, MEASUREMENTS

0.1

-

~

V2

=::::::::

o. 1

ICIIBP 2.0

Id@VBE(off)'5.0V
0.2

0.3

0.5 0.7

1.0

2.0

IC, COLLECTOR CURRENT lAMP)

1-276

t,

3.0

5.0

7.0

10

2N6306,2N6307,2N6308

FIGURE 7 - DC CURRENT GAIN

FIGURE 8 - COLLECTOR SATURATION REGION

100

-

~

VCE = 5.0 V
70
50

~

I

;;:

r--- t-

J5 0C

'"
~

I-

'"
..,..,
::>

30

~

~

o

;

1\ I\.

-

::::

\.

~

1\ "1\

~

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

\

1.0

\

0
9.05 0.07 0.1

TJ = 25 0e

G

1.6
0

r-:::. e

leliB = 2.0

'"
«

':;
0
> 0.8
>-

..... ¢

VBE(sat!

~

0.1

0.2

0.3

1.000=

ttr

05 0.7

1.0

2.0

~

+2.0

8

/

~

II II

I
VCE(,..)

+2.5

+0.5

-

w

r- 'OVC for VCE(,..)
..-

~ -0.5
~

IC/IB=5.0

5.0 7.0

-1.0

-2.0
0.1

0.2

~

'"
13

'"

~
j
8
!2

....r::::",.

11

1

0.7 1.0

2.0

I

0.3

0.5

'°1
3.0

-I

5.0 7.0

10

FIGURE 12 - CAPACITANCE

1000
700
~ 500

1./

100

-

III

TJ = 25°C

II
Cib

w

~ 300

S 200
~..,

' - - - -75°C

0

U

5.0
2.0 - -25~C

REVERSE

FORWARD

....... Cob

100
70

50
VCE = 200 Vdc-

20
-0.2

+0.2

+0.4

.....

0

1.0
-0.4

.......

«

0f::= =1000e
20

...... VI--

IC. COLLECTOR CURRENT (AMP)

500~TJ-1500C

1=125~C

I 1 j

1111~+250C

I-

10

~;~oc

+250C 10 +150 JC

i- l .5 r- 0IVB for VBE

2000

I

5.0

V'

.... ""

~

~

l,I

IC/IIB=i°fttff
3.0

y

+25 0 C to +150 o

FIGURE 11 - COLLECTOR-CUTOFF REGION

20 o

3.0

/

'"::>

100 0

~

2.0

/

IC. COLLECTOR CURRENT (AMP)

I-

1.0

'Applies for ICIIB <; hFE/5

~ +1.0

,,",V

VBE @VCE = 5.0 V

3;

~ +1.5
U

A't-

J

0.4

0.5 0.7

0.3

I-

IC/IB = 5.0

':;

""-

......

0.2

\

--

'\..

FIGURE 10 - TEMPERATURE COEFFICIENTS
+3.0

2: 1.2
w

\

lB. BASE CURRENT (AMP)

FIGURE 9 - "ON" VOLTAGES

00

\

"-

Ie. COLLECTOR CURRENT (AMP)

2.0

\ 7.0A

1\
\

8

~

0.3

2.0

o

_

\

5.0A

\

:;;

>

0.2

3.0

1\
i\

3.0 A

Ie =2.0 A\

w

7.0
5.0
0.1

4.0

':;

f-

p

10

TJ = 25°C

[\
\

\

«

\.

-

-55°C

c

\

2:

~

20

1\

o

r- TJ -150::'

z

5.0

0.5

+0.6

1.0

2.0

5.0

10

20

50

VR. REVERSE VOLTAGE (VOLTS)

VBE. BASE EMITTER VOLTAGE (VOLTS)

1-277

100

200

500

IPI

®

216315 216316

PIP

MOTOROLA

216317 216318
COMPLEMENTARY SILICON
MEDIUM·POWER TRANSISTORS
7.0 AMPERE
___ designed for general-purpose power amplifier and switching
applications_

•
•
•
•

COMPLEMENTARY SILICON
POWER TRANSISTORS
6O-BOVOLTS
90 WATTS

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC =4_0 Adc
Low Leakage Current - ICEX = 0_25 mAdc (Max)
Excellent DC Current Gain - hFE = 20 (Min) @ IC = 2_5 Adc
High Current Gain - Bandwidth Product fT = 4_0 MHz @ IC = 0_25 Adc

-MAXIMUM RATINGS
Rating

Symbol

2N6315
2N6317

2N6316
2N6318

Unit

Collector-Emitter Voltage

VCEO

60

SO

Vdc

Collector-Sase Voltage

VCB

60

SO

Vdc

Emitter-Sase Voltage

VEB

5_0

Vdc

IC

71J
15

Adc

Base Current

IB

21J

Adc

E

Total Devica Dissipation - T C = 25°C
Derate above 26°C

Po

90
0_615

Watts

SEATING PLANE

-65 to +200

°c

Collector Current - Continuous
Peak

Operating and Storage Junction
Temperature Range

TJ. Tstg

W/oC

--uP

-8--

C

4t I =:::!!~;:::::::::~4
---F--

THERMAL CHARACTERISTICS
Characteristic
Thermal Resiltance, Junction to Case

*Indicates JEDEC registered data. Limits and conditions differ on some parameters and reregistration reflecting these changes has been requested. All above values meet or exceed

FIGURE 1 - POWER DERATING

140

g 120
"z

~ 100
0

;::
~

80

;

SO

'"~

40

.P

20

0

I - - ...........

'-.....

........

l"'--.......
-.............

~

o
o

. . . . 1'--.
25

50

75

100

125

s
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

present JEDEC ragistered data_

150

175

200

MILLIMETERS
DIM Mill! MAX
B 11.94 12.70
.35 8.64
C
D
0.71 0.8S
1.27 1.91
E
F 24.33 24.43
5.33
G 4.83
H
2.41
2.S7
J 14.48 14.99
K 9.14
1.27
P
n. 3.S1 3.86
8_89
S
3.S8
T
15.75
U

-

I CHES
MIN MAX
0.470 D.500
0.250 0.340
0.028 0.034
0.050 0.075
0.958 0.962
0.190 0_210
0.095 0.105
0.570 0.590
0.360
- 0.050
0.142 0.152
- 0.350
0.145
0.S20

All JEOEC Dimensions and and Notes Apply.

TC. CASE TEMPERATURE lOCI

CASE 80-02

Sate Ar.. Limits are Indicated by Figure 13.

TO-66

1-278

NPN 2N6315, 2N6316
PNP 2N6317, 2N6318

-ELECTRICAL CHARACTERISTICS (TC = 2S o C unless otherwise noted)
Characteristic

Svmbol

Min

Max

60
BO

-

-

0.5

-

0.25

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

(lC = 100 mAde, la = 0)
Collector Cutoff Current
(VCE = 30 Vde, la = 0)

(VCE

= 40 Vdc, la = 0)

2N6315,2N6317
2N6316,2N6318
2N6315,2N6317
2N6316,2N631B

(VCE = 60 VdCVaE(oll) =1.5 Vdc,TC =150o C)

2N6315,2N6317
2N6316,2N6318

Collector Cutoff Current

(Vca = 80 Vde, IE = 0)

mAde

0.5
mAde

ICEX

(VCE = 60 Vde, VaE(olf) = 1.5 Vde)
(VCE = BO Vde, VaE(oll) = 1.5 Vde)

(VCB = 60 Vde, IE = 0)

-

ICEO

Collector Cutoff Current

(VCE = BO Vdc,VaE(oll) =1.5 Vdc,TC =1500C)

Vdc

VCEO(sus)
2N6315,2N6317
2N6316,2N631a

0.25
2.0
2.0
mAde

ICBO
2N6315,2N6317
2N6316,2N6318

Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)

lEBO

-

0.25

-

1.0

35

-

0.25
mAde

ON CHARACTERISTICS
DC Current Gain (11

-

hFE

(lC = 0.5 Ade, VCE = 4.0 Vde)
IIc = 2.5 Ade, VCE = 4.0 Vde)

20

IIc = 7.0 Ade, VCE = 4.0 Vde)

4.0

-

-

1.0
2.0

VaE(satl

-

2.5

Vde

VaE(on)

-

1.5

Vde

IT

4.0

-

MHz

-

300

hIe

20

-

t,

-

0.7

j.lS

Is

1.0

1'5

'I

--

O.B

1'5

Collector-Emitter Saturation Voltage 11)

VCE( ..t)

IIc = 4.0 Ade, IB = 0.4 Ade)
IIc= 7.0Ade,IB = 1.75 Ade)

Base-Emitter Saturation Voltage (1)

100
Vde

IIc = 7.0 Ade,la = 1.75 Ade)

Base-Emitter On Voltage (1)
(lC = 2.5 Ade, VCE = 4.0 Vde)
DYNAMIC CHARACTERISTICS
Current-Gam - Bandwidth Product (2)

(lC = 0.25 Ade, VCE = 10 Vdc, I test = 1.0 MHz)
Output Capacitance

pF

Cob

(VCB = 10 Vde, IE = 0, I = 1.0 MHz)

2N6317,2N6318
2N6315,2N6316

Small-Signal Current Gain

200

-

IIc = 0.5 Ade, VCE = 4.0 Vde, I = 1.0 kHz)
SWITCHING CHARACTERISTICS
Rise Time
Storage Time

Fall Time

(VCC = 30 Vdc, IC = 2.5 Ade,
lal = IB2 = 0.25 Ade)

-Indicates JEDEC Registered Data.
(1' Pulse Test: Pulse WidthS' 300 ItS. Duty Cycle ~ 20%.

(2) IT

m

Ihlel ef te..

1-279

NPN 2N6315, 2N6316
PNP 2N6317, 2N6318

NPN

PNP

2N6315 and 2N6316

2N6317 and 2N631 B

FIGURE 2 - DC CURRENT GAIN

500

500
VCe-4.0V

300
200

300

TJ=15;C-

VCp4.0V

TJ= 1500C

200

z

z

~

100

.=.

-

S
'"
""'"
"'"

~ 100

25'C

-

0
0
-55'C

~ 20

0.2

~"

I--..

10
5.0
0.07 0.1

S
~

0.3

0.5 0.7

......

~c

~

2.0

3.0

=-55'C

50

.......

30

i

........

20

I"-

1.0

25'C

~

r-...'
.......

10
5.0
0.07 0.1

5.0 7.0

0.2

IC. COLLECTOR CURRENT (AMPERES)

0.3

0.5 0.7

2.0

1.0

3.0

5.0 7.0

IC. COLLECTOR CURRENT (AMPERES)

FIGURE 3 - COLLECTOR SATURATION REGION

6 2.0
~
w

'"~

s:

III
III

1.6

~

1.2

TJ·25'C

5.0A

1.2

~
0.8

~

i\~

0.8

c

g

_ 0.4

0.4

8

...

~

2.5A

!:;

g
..J

I

II

IC= LOA

1.6

w

!:::E

8

I

!i!

5.0A

ffi

~

2.0

!:;

~

2.5 A

IC'I.0A

en

TJ=25'C

l!l

>

0
10

20

30

50

70

200

100

300

500 700 1000

0
10

20

50

30

70

100

200

300

500 700 1000

lB. BASE CURRENT (rnA)

lB. BASE CURRENT (rnA)

FIGURE 4 - "ON" VOLTAGES
2.0

2.0

TJ=25'C

TJ·25'C
1.6

1.6

~

~ 1.2
w

co

~g

O.8

r- VBE(..,)@IC/IB = 10

>'

VBE@VeE"4.0V
O.4

--

IlcJl~ =1 '0 r-

JcEI(sa!) @
0
0.07 0.1

0.2

0.3

0.5 0.7 1.0

~F'"

"

~

!i!

VBE(atllP IcliB = 10
p.....-

0.4

L.--

r-3.0

5.0 7.0

0
0.07 0.1

VBIE ~ V~E'

0.3

I
I)

.! I

t.o ~

V~E++CJIB~ 1~
0.2

~

p-

0.5 0.7

1/
-"
~

1.0

2.0

IC. COLLECTOR CURRENT (AMPERES)

IC. COLLECTOR CURRENT (AMPERES)

1-280

If

~

w

!::; 0.8
co
>
,,;

V

P'

!::;
c 1.2

~

V
2.0

~

iii

3.0

5.0 7.0

NPN 2N6315, 2N6316
PNP 2N6317, 2N6318

II.

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA

20

13
0:

~

.

10
7.0

..

::;; 5.0

5

!z

3.0

~

2.0

w

.

....

~

.

. ...

d~

TJ = 200 0

'i ...D.1 ms
0.5 ms:

=

1.0rm~1r

I--.-SECONO BREAKDOWNLIMITEO ~
~
---BONOING WIRE lIMITEO
5.0ms
\.
0C
25
--THER(~rN~i~~1m~N @TC
~ O. 7
Curves Apply Below Rated VCEO
~ O. 5
u
2N6315,17 __ ~
1
~ O. 3
2N6316,18
0.2
5.0
7.0
10
20
30
50
70
VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)
::J

U

~

...

1.0

F- -

-'"

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable ooeration; i.e., the

100

The data of Figure 5 is based on T J(pk) = 200°C; TC is
variable depending on conditions. Second breakdown pulse limits

<

are valid for duty cycles to 10% provided T Jlpk)
200°C.
T J(pk) may be calculated from the data in Figure 6. At high

transistor must not be subjected to greater dissipation than the

case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations Imposed by
second breakdown.

curves indicate.

FIGURE 6 - THERMAL RESPONSE

1.0
0.5

~~

....
~~

ffi i
I--T

11r
lG

\.S

INCHES
MILLIMETERS
STYLE 1
MIN MAX
DIM MIN MAX
PIN 1. OASE
39.3
1
A
2 EMITTER
0.830
21.08
CASE COLLECTOR 0
C
7.62 0.250 0.300
6.35
1.09 O. 38 0.043
D
.97
1.78 0.055 0.070
1.40
E
F 29.90 30.40 1.177 1.191
G 10.67 11.18 0.420 0.440
H
5.33
5.59 0.210 0.220
J 16.64 17.15 0.655 0.675
K 11.18 12.19 0.440 D.480
Q
4.19 0.150 0.165
3.81
1.050
26.61
R
U 2.54
3.05 0.100 0.120

-

.""

175

200

1-282

CASE 1-04
NOTES:
1. ALL RULES AND NOTES ASSDCIATED WITH
REFERENCED TO·3 OUTLINE SHALL APPLY.

2N6338 thru 2N6341

·ELECTRICAL CHARACTERISTICS fTC'" 2SoC unles$otherwlse noted)

I

Symbol

OIl11'acteristic

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

Max

Min

Unit

Vdc

VCEO(sus)

2N6338
2N6339

(Ie'" 50 mAde, IS '" 0)

100
120
140
150

2N634Q

2N6341
Collector Cutoff Current

/.lAde

'CED

(VeE ~ 50 Vdc, IS'" OJ

2N633B

50

(VeE'" 60 Vdc, 18 '" 0)

2N6339

50

(VeE = 70 Vdc, IS = 0)

2N6340

50

(VeE = 75 Vdc, 'e '" 01

2N6341

50

Collector Cutoff Current

'CEX

(VeE'" Rated VCEO. VEBloff) "" 1.5 Vdcl
(VeE = Rated Vceo. VEBloff) = 1.5 Vdc, TC = 1S00e)

10

,!.lAde

10

mAde

Collector Cutoff Current
(Ves = Rated Ves. Ie = 0)

leBO

10

#lAde

Emitter Cutoff Current
IVse = 60 Vdc, Ie = 0)

leso

100

,uAde

ON CHARACTERISTICS 11)
DC Current Gatn
(Ie" 0.5 Adc, VeE = 2.0Vdd

hFE

50

lie = 10Ade, VeE'" 2.0Vdcl
(Ie'" 26 Adc, VeE = 2.0 vdcl

120

30
12

Collector-Emitter Saturation Voltage
(le= 10 Adc, Ie'" 1 DAdc)

Vdc

VCE(sat)

10

I..

(Ie'" 25 Adc, Ie = 2.5 Adcl
'Base-Emitter SaturatIOn Voltage
(Ie = 10 Adc, IS'" 1.D Adcl

VSEhat)

Vdc

,.

I.

(lc s 25 Adc, 18" 2.5 Adc)

2.5

Base-Emitter On Voltage
(Ie'" 10 Adc, VCE = 2.0 Vde)

VSEfon)

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain BandWidth Product (2)
(Ie = 1.0 Adc, VeE = 10 Vdc. f test '" 10 MHz)

40

Output Capacitance
lVCB'" 10 Vdc, Ie '" 0, f '" 0 1 MHz)
SWITCHING CHARACTERISTICS

0.3

Rise Time
IVee:::::: 80 Vdc, Ie = lDAdc, 181

=

1.0 Adc, VSE(off) = 6 D Vdc)

Storage Time

10

IVee~80Vdc, IC= 1DAdc,I81 = '82= 1 DAde)

FaUT,me

025

'f

IVCC~80Vdc,

le= 1DAdc,I81 ""82= 1 DAde)

Indicates JEDEC Registered Data
(1) Pulse Test
(2) fT '"

Pulse Width':;;;; 300 /oJS, Duty Cycle';;; 20%

~tel.ftest

FIGURE 3 - TURN-ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
100{)
700
500

VCC
+SOV

300

~ :c-Id @ VBE off) = 6.0 V

200 t'--

RC
S.O Ohms

'+-!

VCC = SO V

..--J/---' SCOPE

10 1t

~ 100
;::: 70

+:1_~D-_
-9.0VJ--C

50

tr, t1'" 10 ns
Duly Cycle = 1.0%

30

ICIIB = 1~';:
TJ 25 0 C

r-

"1-.

........
.......

I,

==

==
/

/

,

20

-5.0V

10
0.3

Note: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test cor1ltitions_

0.5 0.7

1.0

2.0

3.0

5.0 7.0

IC. COLLECTOR CURRENT (AMP)

1-283

10

20

3D

2N6338 thru 2N6341

FIGURE 4 - THERMAL RESPONSE
1.a
~
~_
we:>

O. 7f=O - 0.5
O. 5

"w

:: ~ o. 3~
~~ O.2

0.2

r--

in'"
ze:>



-

<.>
<.>

c

~

30

~

~ l....... 1...

. I-I

-55°C

"""'

20

~o

~ 2.4

I-...

~
..

~

:.---

lOA
1.6

o

Si

.......

I""'-

3.0

5.0 7.0

10

20

~II

<.>

o

0.02

0.1

0.05

"

~c

~

w

'"~
c
>

+3.0
G

b

i}.25 0

~
.5 +2.0

j

2.0

~
z
w
<3

1fT
'/

1.6
,~

1.2
V~E( ..t) @ IC/IB = 10

,,; 0.8
VBE @VCE = 4.0

0.5 0.7

1.0

2.0

3.0

$

5.0 7.0

II

~

*

w

oJ

.

::>

Co>

0

....

;

lctJt)

II

0:

1/ 17
V

~

~ -1.0

....

~
30

-2.0
0.5

50

I:C'"

OVB for VBE

~

20

1.

VI.- r!

1.::;:::'10-

::>

·r
0.7

1.0

T
2.0

3.0

5.0 7.0

10

20

30

50

IC. COLLECTOR CURRENT (AMP)

FIGURE 13 - BASE CUTOFF REGION

100

200
100
20
10
5.0

for

::

50

~

II
I

I-

/

10

+1.0

FIGURE 12 - COLLECTOR CUT -OFF REGION

50

10

5.0

to

<.>

1000

~
l:i

2.0

- - - -550C +25 0C
- - +2~oC:o f,'5~oC

IC. COLLECTOR CURRENT (AMP)

-

1.0

Llp~L\Js FOJ IC/IBJhjE/4

0

/

VCE(sat)@IC/IB=10

o

h

~

J

0.4

0.5

FIGURE 11 - TEMPERATURE COEFFICIENTS

FIGURE 10 - "ON" VOLTAGES

2.4

0.2

IS. BASE CURRENT (AMP)

IC. COLLECTOR CURRENT (AMP)

2.8

\.

ITt--

IC =2.0 A'

0.01

50

30

1'-..

5.0 A

~ 0.8

r"""

77"~ YCE= ',0 V
2.0

1.0

30A

~

"-

VCE =4.0 V
10
0.5 0.7

T
Tp 250C

3.2

W

F

!

TJ = 150°C

1== 1==

I-

~
0:

a

l000 C

2.0
0
<.>
1.0
25 0 C
~ 0.5
FORWARD
0.2 ~:REVERSE
0.1
+0.2
+0.1
-0.1
-0.2
-11.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)

w

~

!P

-0.5

1-288

1==

20
10
5.0 t===== i=

1000 C

2.0

25~C

1.0

"

0.5
0.2 F,REVERSE

-0.4

Vce=4D v

f-- I-TJ = 150 0 C

0.1
+0.2

+0.1

_tORWARD
-0.2
-0.3
-0.1
VBE. BASE·EMITTER VOLTAGE (VOLTS)

-0.4

-0.5

NPH

®

PMP

2N6383 2N6648
2N6384 2N6649
2N6385 2N6650

MOTOROLA

15 AMPERE PEAK

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS

COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTORS

· .. monolithic complementary silicon Darlington transistors designed
for low and medium frequency power applications such as power
switching, audio amplifiers, hammer drivers, and shunt and series
regulators.

40-60-80 VOLTS
100 WATTS

• High Gain Darlington Performance
• True Complementary Specifications
*MAXIMUM RATINGS
Symbol

2N6383
2N6648

2N6384
2N6649

2N6385
2N6650

Unit

Collector-EmItter Voltage

VCEOlsus)

40

60

80

Vdc

Collector-EmItter Voltage

VCEX

40

60

80

Vdc

Collector-EmItter Voltage

VCBO

40

60

80

Vdc

Emitter Base Voltage

VEBO

5.0

Vdc

Contmuous

IC

10

Adc

Peak 11)"

ICM

15

'B
Po

0.25

Adc

100
0.571

Watts
W/oC

- - 6 5 to + 2 0 0 _

°c

Rating

Collector Current
Base Current

Continuous

Total Power DIssipation
@

TC = 25°C 12)
Derate above 2SoC

Operatmg and Storage Junction

TJ. Tstg

Lr~
r~KESEATlN(~

I

PLANE

Temperature Range (2)

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering

Symbol

Max

Unit

R()JC

1.75

°C/W

TL

235

°c

Purposes: 1/32" from Case for 5 Seconds

* IndIcates JEDEC RegIstered Data.
* *Not JEOEC Registered.
11) Pulse W,dth = 50 ms, Outy Cycle", 10%.

STYLE t,
PIN 1. BASE

2 EMITTER
CASE· COLLECTOR

12) Exceeds JEOEC Registration for 2N6648, 2N6649, 2N6650.
JEOEC Registration gives Po = 70 W, T J = 150°C.
DIM

MILLIMETERS
MIN MAX

A
B

Base

Collector

Collector

1

1

l ~b
~4k

C

~50

Emitter

--ill
:::.<4k

~50

b

Emitter

1-289

635
099

39.37
21.0B
762
1.09
3.43

INCHES
MIN
MAX

0.250
0.039

0
E
F 29.90
30.40 1.177
I1.1B 0.420
G 10.67
H 533
.9 0.210
11t5 0.655
J t6.64
0.440
K 11.18 1219
Q
4.09 0.t5t
3.8'
R
2667
Colleclorconlllltted to case
CASE 11-01
(TO·3)

1.550
0.831J
0.300
0.043
0.135
1197
0.440
0220
0.675
0.480
0.t6t
1.050

2N6383,2N6384,2N6385,NPN,2N6648,2N6649,2N6650,PNP

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwISe noted)
Characteristic

Symbol

Min

Max

40
60
80

-

-

1.0

-

-

0.3
3.0

-

10

40
60
80

-

40
60
80

-

1000
100

20,000

-

2.0
3.0

-

Unit

OFF CHARACTERISTICS
·Collector-Emltter Sustaining 'Voltage (1)
(lC = 200 mAde, IB = 0)

Vde

VCEO(sus)
2N6383, 2N6648
2N6384, 2N6649
2N6385, 2N6650

Collector Cutoff CUrrent

mAde

ICEO

(VCE = Rated Value)

·Collector Cutoff Current
(VCE = Rated VCEO(sus) Value, VBE(off)
(VCE = Rated VCEO(sus) Value, VBE(off)

mAde

ICE V

= 1.5 Vde)
= 1.5 Vde, TC

= 150°C)

* Emitter Cutoff Current

lEBO

mAde

(VES = 5.0 Vde, IC = 0)
Collector-Emitter Sustaining Voltage (1)

(RBE = l00!!. IC

Vde

VCER(sus)

= 200 rnA)

2N6383,2N6648
2N6384,2N6649
2N6385, 2N6650

Collector-Emitter Sustaining Voltage (1)

Vde

VCEV(sus)

(VSE(olf) = 1.5 V. IC = 200 rnA)

2N6383,2N6648
2N6384, 2N6649
2N6385, 2N6650

ON CHARACTERISTICS (1)
*DC Current Gain
·(lC = 5.0 Ade, VCE = 3.0 Vde)
(IC = 10 Ade, VCE = 3.0 Vde)

*Collector-Emitter Saturation Voltage
(lC
(IC

= 5.0 Ade, IS = 0.01 Ade)
= 10 Ade, IB = 0.1 Add

= 5.0 Ade, VCE =
= 10 Ade, VCE =

Vde

Vde

VSElon)
3.0 Vde)
3.0 Vde)

DIOde Forward Voltage
(IF

-

VCE(sat)

*Base-Emltter On Voltage
(lC
(lC

-

hFE

-

2.8
4.5

VF

-

4.0

Vde

Cob

-

200

pF

Ihle l

20

-

-

hIe

1000

-

-

= 10 Ade)

'OYNAMIC CHARACTERISTICS

Output Capacitance
IVCB = 10 Vde,IE

=

0, I test

= 1.0 MHz)

*Magnitude of Common-Emitter Small-Signal Short-Circuit
Current Transfer RatiO
IIC

= 1.0 Ade, VCE = 5.0 Vde,

1= 1.0 MHz)

Common Emitter Smail-Signal Short-CircUit Forwar~

Current Transfer RatiO
(lC

= 1.0 Ade,

VCE

= 5.0 Vde, f = 1.0 kHz)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base-Forward Biased
Second Breakdown Energy With Base Reverse-Biased
(L
11)

= 12 mH, RSE = lOOn, VBE(oft) = 1.5 Vde,

IC

= 4.5 Ade)

Pul.e Test: Pulse W,dth = 300 ~s, Duty Cycle';; 2%.

* Indicates JEOEC Registered Data.

1-290

2N6383,2N6384,2N6385,NPN,2N6648,2N6649,2N6650,PNP

FIGURE 2 - COLLECTOa SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
20 K

- - ......

10 K

1\

\

z

;;:

J.. . . .

~

;

1\

~+150oC "

....
'"

~

1K

1L-~25'.V

\
3A

IC" 1 A\

V
/'

IDA

\ 5A

1\

t"--~-300C

200
01

1 1

o
05
'C, COLLECTOR CURRENT IAMPI

01

10

05

10

50

100

lB. BASE CURRENT ImAI

FIGURE 3 - COLLECTOR·EMITTER SATURATION VOLTAGE

FIGURE 4 - BASE·EMITTER VOLTAGE

~ 15
1

o

2:
w

'"~'"
o

~

1

2.0

1.5

:::

--- -

--'C/'B" 100
---IC/IB" 500

!

10 f-. 30 C

~

0.5

V~

l

...,,-:::

o

8

~

>

+25 0C'+150o C

--VBEI"'I

r-- ___ VSE/on)

~

1

~ V'

-- --===

1

....- , / '

i-'~

:::;1'

-30°C

C-=~50C V

r- +liO OC

0
0.1

0.5
IC, COLLEC10R CURRENT IAMPI

10

0.1

FIGURE 5 - SWITCHING TIME TEST CIRCUIT
(Shown for NPN)
Vee

RS

= 200)(

lSI

= IS2 = le/500

=

0.5

1

10

IC, COLLECTOR CURRENT IAMPI

FIGURE 6 - SWITCHING TIMES
10

20 Vdc

-

RL

'f

r---

-r-_

"

's

5

-r--.'d
0.1
10

1

f"" 200 Hz

IC, COLLECTOR CURRENT IAMPI

1-291

2N6383,2N6384, 2N6385, NPN,2N6648,2N6649,2N6650,PNP

FIGURE 7 - THERMAL RESPONSE
1~

.... 6

O.7f:=: D·0.5
O.5

-- ......

,HID.3 - _10.2
......
~~ o.2
......
'--- -0.1

;....,::::;

pfJUl

~

:;;;;;

.... 0

~~ o. 'r====== ==0.05

~Ii'"

~~o.o7

0.0 I
0.1

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II
TJ(pk) - TC =P(pk) 8JCIt)

t~

:: ~ 0.05 f-0.02

,.....
:0
";::'~O.03
::;::Si
0.02

8JCIt) - r(tl8JC
8JC -1.750CIW

t:Z
"SING LE PULSE

DUTY CYCLE. 0

=

II/t2

0.01

I

I

I

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

IIII

7.0

I I I

I I

10

20

50

30

70

100

200

300

SOD

700 1000

t.TIME(m~

There are two limitations on the power handling ability of
a transistor: average junction temperature and second breakdown. Safe operating area curves Indicate Ie-VeE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figure 8 is based on TC "" 2SoC; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated

for temperature.
T J(pk) may be calculated from the data in Figure 7. At
high case temperatures, see Figure 9, thermal limitations will
reduce the current that can be handled to values less than
the limitations imposed by second breakdown. Second breakdown hmitations do derate the same as thermal limitations.
Allowable current at the voltages shown on Figure 8 may be
found at any case temperature by derating linearly to 200o C.

FORWARD BIASEO SAFE OPERATING AREA
FIGURE 8 - TC = 2SoC

, ,

IS

,

10

,

Ie
,.

~

....

.. --1''"l
~~M,;6~~G
~

---

'"

0

~

'"'-'

- -

.....

10,us
-50,us

SECOND BREAKDDWN

-

'\f\.

"

,

de'

FIGURE 9 - TC = 100°C

WIRE LIMITED-I m,
THERMAL LIMITATION
5 m,
_50 ms
AT TC = 250C

"

-

... ...

...

...

...

"

20

50

80

VCE. CDLLECTOR·TO·EMITTER VDLTAGE (VOLTS)

FIGURE 10 - CE DIODE CHARACTERISTICS

w

.

~

3

i;'

2. 5
./

2

~

~ 1.5
w
I-c
0

;:;

u.

>

....-

.,/ V

V

-----

-~

'F== ~OC
O. 5

i--- -t1150DC

o

0.1

0.2

\:

"-

...
,'\.. '\.
...-;;

'\.

1m'
5m,
SECOND BREAKDOWN
LIMITED
2N6383. 2N6648
~
- BDNDING WIRE LIMITED~
- - - - - THERMAL LIMITATION
2N6384.2N6649- j-'I\
AT TC = 1000C
---1-2N6385 2N6650 I0.2
50ms
'
D.15
10
20
50
VCE. COLLECTOR·TO·EMITTER VOLTAGE (VOLTS)

3. 5

'"
~
'">

... ...
10}Js
50,us

2N6~85. 2N66~0

10

......

de

~

2N6383.2N6648
2N6384,2N6649
0.2
0.15

'

10

\ '\

0.5

E

,

~ i.-

'\

"'"

15

0.5
IF. DIODE FORWARD CURRENT (AMPS)

10

r'\.

~

~~
80

®

2N6386
2N6387
2N6388

MOTOROLA

PLASTIC MEDIUM-POWER
SILICON TRANSISTORS

DARLINGTON

· .. designed for general·purpose amplifier and low·speed switching
applications.

8 AND 10 AMPERE

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Coliector·Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 40 Vdc (Min) - 2N6386
= 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
Low Coliector·Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6386
= 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388

•
•

•

•

NPNSILICON
POWER TRANSISTORS
40-60-60 VOLTS
65 WATTS

Monolithic Construction with Built·ln Base·Emitter
Shunt Resistors

• TO·220AB Compact Package
• TO·66 Leadform Also Available
*MAXIMUM RATINGS
Rating

Collector-Emitter Voltage

Symbol

2N6386

2N6387

2N6388

Unit

VCEO

40

60

80

Vdc

40

60

80

Vdc

Collector-Base Voltage

Vca

Emitter-Base Voltage
Collector Current - Continuous

VEa

.
..
...

8.0
15

IC

Peak

Base Current
Total Power Dissipation @ T c:::: 25°C
Derate above 2SoC

la
Po

Total Power Dissipation @ T A 25°C
Po
Derate above 2SoC
Operating and Storage Junction,
TJ, Tstg
Temperature Range

.
..
...

5.0
10
15

10
15

250
65
0.52
2.0
0.Q16

Vdc
Adc
mAde

Watts
WJOC

Watts
WJOC

-4------65 to +150 -

°c

THERMAL CHARACTERISTICS
Characteristics

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

~

Unit

1.92

°C/W

ROJA

62.5

°C/W

lO

«
~ 2.0 40
l:l

.....................

0

.P

DIM

MAX

A

6.48
1.27

0.620
0405
0190
0035
0147
0105
0155
0.022
0.582
0.055
0.210
0120
0110
0.055
0.255
0.050

2.03

0.080

G

~

~

'" ""

o

......................

T
U
V

-.......:::: ~

o

20

AN03

H

0~

1.0 20

o

NOTES
1 DIMENSION H APPLIES TO ALL lEADS
2 DIMENSION L APPUES TO LEADS'

C
D

"'"

z
0
;::

STYL£l
PIN 1 BASE
2 COLLECTOR
3 EMITT£R
4COLLfCTOR

ES

.......

~ 3.0 80

~

Max

ROJC

FIGURE 1 - POWER DERATING

TA TC
4.0 80

'"
~

Symbol

40

100
80
80
T,TEMPERATURE lOCI

120

140

180

1-293

1427
139
533
3.04
2.79
1.39

CASE 221A.Q2
TO·220AB

2N6386 2N6387 2N6388 NPN

·ELECTRICAL CHARACTERISTICS (TC = 260 C unless otherwise noted)

III]

I

I

Char_istic

Max

Min

Svmbol

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustolning Voltage (I)
lIC = 200 mAde, IS = 0)

Collector Cutoff Curront
(VCE = 40 Vdc, IS = 0)
(VCE = 60 Vdc, 18 =0)
(VeE = 80 Vdc, IS - 0)

VCEO{sus)
2N6386
2N6387
2N6388
ICED

Collector Cutoff Current
2N6386
(VCE = 40 Vde, VES(off) = 1.5 Vdc)
2N6387
(VCE = 80 Vdc, VES(off) - 1.5 Vdc)
2N6388
(VCE ·80 Vde, VE8{offl - 1.5 Vde)
(VCE =40 Vde, VES{off) = 1.5 Vde, TC = 125°C) 2N6386
(VCE = 60 Vde, VES(off) = 1.5 Vdc, TC = 1250 C) 2N6387
(VCE = 80 Vde, VES{off) = 1.6 Vde, TC = 126oC) 2N6388
Emitter Cutoff Current
(VSE = 6.0 Vdc, IC = 0)

-

mAde

-

2N6386
2N6387
2N6388
ICEX

IESO

Vdc

-

40
60
80

1.0
1.0
1.0
"Ade
300
300
300
3.0
3.0
3.0

mAde

-

5.0

1000
1000
100
100

20000
20000

-

2.0
2.0
3.0
3.0

mAde

ON CHARACTERISTICS (1)
DC Curront Gain
lIC - 3.0 Adc, VCE =3.0 Vdc)
lIc = 5.0 Adc, VCE =3.0 Vde)
lIc = 8.0 Ado, VCE = 3.0 Vde)
lIc = 10 Ade, VCE =3.0 Vde)
Collector-Emitter Saturation Voltage
lIc - 3.0 Adc, 18 = 0.006 Adc)
lIc • 5.0 Adc, IS = 0.01 Adc)
lIc = 8.0 Ade, IS = 0.08 Ade)
lIc = 10 Ade,lS = 0.1 Ade)
Basa-Emlttar On Voltage
lIC = 3.0 Adc, V CE =3.0 Vde)
(lc = 5.0 Adc, VCE =3.0 Vdc)
lIc = 8.0 Adc, VCE =3.0 VdcJ
lIc = 10 Ade, VCE =3.0 Vde)

-

hFE
2N6386
2N6387, 2N6388
2N6386
2N6387, 2N6388

Vdc

VCE(satl
2N6386
2N6387, 2N6388
2N6386
2N6387, 2N6388

-

VSE(on)

Vdc

-

2N6386
2N6387, 2N6388
2N6386
2N6387, 2N6388

-

2.8
2.8
4.5
4.5

Ihfe l

20

-

Cob

-

200

pF

hfe

1000

-

-

DYNAMIC CHARACTERISTICS
Small-5ignal Currant Gain
lIC = 1.0 Adc, VCE = 5.0 Vdc, f t ••t = 1.0 MHz)
Output Capacitance.
(VC8 = 10 Vdc, IE =0, f =1.0 MHz)
Small-Signal Curront Gain
(lC ~ 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
• Indicates JEDEC Registered Data
(1) Pulsa Tast: Pulse Width .. 300 "s, Duty Cycl... 2.0'16.

FIGURE 3 - SWITCHING TIMES

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
7.0
5.0

Vee

+30 V
Ra & Rc VARIED TO OBTAIN DESIRED CURRENT lEVELS
01. MUST BE FAST RECOVERY TYPES, e.g.,
M8D&lIIO USED ABOVE 18 "" 100 rnA
MSD61DD USED BELOW 18'" 100 rnA

3.0

:'-~l~lJ: .
~~X __

I

I

2&~s

ts

Re

~ 1.0

........

t!...-

~
t-

_. 0.7
0.3
0.2

fort(!andtr,D,isdisconnamd
andV2=D

tr.tf

0.1

0.2

0

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

I\..

1.4

ti

1.0

0.3

10

r-0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

+5.0

~ +4.0
>
.! +3.0

rJL5 0lC
2.5

Q +2. 0

II

0

~

~

i-':

W

to

1.5 VBEljt)@lICi1 S ' 250

:>

VBE @lVCE • 4.0 V
1.0
VCEI,,!)@ IC/IB' 250
0.5
0.1

0.2

0.3

0.5

07

-

1.0

'"
!:)

!;(

./

-550 C to
-1.0

~ -3.0

i

7.0

10

0.1

V-

250 C to 150yi-"'

-4. 0

-5.0
5.0

~

0.2

0.3

""

0.5 0.7

1.0

2.0

-550 C to 25 0 C

3.0

IC. COLLECTOR CURRENT lAMP)

IC. COLLECTOR CURRENT lAMP)

FIGURE 13 - DARLINGTON SCHEMATIC

FIGURE 12 - COLLECTOR CUT-oFF REGION
105
F=REVERSE~ ~FORWARO

COLLECTOR

5

'"
Q

103
102

~

10 1

~

100

8

---,

.-----4-..

r==VCE" 30V

r- TJ - 1500 C
I----

10-1
-O.B

I
I
-_
l -.JI
I '-'''''',.....J\AfV-......
1..
________

1000 C

EMITTER
-0.4

I
)
)
)
)
)

BASE

-0.2

+0.2

+0.4

+0.6

+0.8

+ 1.0

+1.2

+1.4

VBE. BASE EMITTER VOLTAGE IVOLTS)

1-296

II
ii

V

~

-Hi"

OVB for VBE

1-'

3.0

L

~I"

25 0 C

~ t:7

*8VC for VeE sat

~ -2. 0

. /V

2.0

2SOC to 150"C

+1. 0

S
w

V

::::::: ?""

'Ic/IB .;; hFE/3

!;;

J

S 2.0

",...
iB

30

'FIGURE 11 - TEMPERATURE COEFFICIENTS

FIGURE 10 - "ON" VOLTAGES

104

20

lB. BASE CURRENT ImA)

3.0

"

B.OA

o

I~

IC. COLLECTOR CURRENT lAMP)

!:;
0
>

,

4.0 A

I ·2.0A

~

,....

TJ'15O"C/

ffi

"
~

~
~ 2.6

~ 5000

B

3.0

!:;

VCE' 4.0V

10.000

3000
~ 2000

en

I ! II

"

5.0 7.0

10

®

2N6436
2N'6437
2N6438

MOTOROLA

HIGH-POWER PNP SI LICON TRANSISTORS
25 AMPERE
POWER TRANSISTORS
PNPSILICON

· .. designed for use in industrial·military power amplifier and
switching circuit applications.
•

High Collector· Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - 2N6436
= 100 Vdc (Min) - 2N6437
= 120 Vdc (Min) - 2N6438

•

High DC Current Gain hFE = 20-80@ IC = 10 Adc
= 12 (Min) @ IC = 25 Adc

•

Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

•

Fast Switching Times
tr = 0.3 j.lS (Max)
ts = 1.0 j.ls (Max)
tf = 0.25 j.lS (Max)

•

Complement to NPN 2N6338 thru 2N6341

80,100,120 VOLTS
200 WATTS

~

IC = 10 Adc

@

"MAXIMUM RATINGS
Rating

Symbol

2N6436

2N6437

2N6438

Unit

Collector-Base Voltage

Ves

100

120

140

Vdc

Collector-EmItter Voltage

VeEO

80

100

120

Vdc

Emltter·Base Voltage

VES

6.0

Vdc

Ie

25
50

Adc

Base Current

IS

10

Adc

Total DeVIce Dlsslpatlon@Tc-2SoC

Po

200
1.14

WIDe

-65 to +200

De

Collector Current

ContinUOUS

Peak

Derate above 2SoC
OperatIng and Storage Junction

TJ,T stg

JF"=3tr

~:~!
r---

Watts

Temperature Range

0li

30

\
\

\

O. 8

r-

;;:; 1.0

~ 0.8

0.4

r-~BEr~CfjW

V

00.3

tl~ I~!J = 10

- 0.5

0.7

1.0

~ +t.O

/

'"'"w

/

*OVs.FOR VCE(..!)

1

~ -1.0

1

I-

r.5

i

20

-2.0

l

-2.5
0.3

30

0.5 OJ

ILk

1-1

1.0

2.0

V

+25o'C TO +150clc

/

./

J..

-55'C Tri +2~.d

I I 5.0TI 7.0

3.0

10

20

30

IC. COllECTOR CURRENT (AMP)

FIGURE 13 - BASE CUT·OFF REGION
10 1

/

Vce=4DV=
Tr +IS0oC

+lo0oC

~ 100

-

OVB FOR VBE

-1.5

l-

2.0 3.0
5.0 7.0 10
IC. COllECTOR CURRENT (AMP)

/

0

-o.S

~

Y

~

2.0

1.0

+2STOT 1S

$ +{l.S

TJ=+1500

I-

0.5 0.7

fj.. V./' lJ
-r::: -tr
-S5 C TO +2;OC

~

FIGURE 12 - COLLECTOR CUT·OFF REGION

10 1

0.3

/

13

~

0.2 r--)CE(I..

0.2

'APPLIES FOR IcIIB" hFEI2

.s +1.S

1/

-...-:~

VBE( ..t)@ IcllB = 10

to

~ 0.6
>'

~ +2.0

/ V

~

1.2

O.OS 0.07 0.1

+2.S

I/,"

1.6

~

"

I'

0
0.02 0.03

FIGURE 11 - TEMPERATURE COEFFICIENTS

TJ = 25°C

1.4

I'..

'\

FIGURE 10 - "ON" VOLTAGE

in

20A

lB. BASE CURRENT (AMP)

2.0
1.8

TJ = 2S OC

\ IDA

1.4

'"
td o.6
c:.... o. 4
'"~ o. 2

'\

2.0 3.0
5.0 7.0
1.0
IC. COLLECTOR CURRENT (AMP)

S.oA

~ 1.0

i" ....

VCE = 4.0 V

\

1
IC=2.0A

ffi 1.2

"" '
K" ,~

r.;;

II I

10
0.3

2.0

'"
? 1.8

"""I-:::

IZ

w 50

FIGURE 9 - COLLECTOR SATURATION REGION

\

i---+100oC
1

tIC

::>

)/

'"

~

1

VCE-4oV

2

10+2SoC

810-2 ioa=REVERSE

/

i---+2Soc
FORWARD

~

t:-==l= REVERSE

Y
10- 3
+0.2

+0.1

0
-0.1
-0.2
-0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)

-0.4

-0.5

1-300

10-4
+0.16

FORWARD

\
+0.08

0
-0.08
-0.16
V8E. 8ASE·EMITIER VOLTAGE (VOLTS)

-0.24

®

2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP

MOTOROLA

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

15 AMPERE

designed for use in general-purpose amplifier and switching
applications.
• DC Current Gain Specified to 15 Amperes
hFE = 20-150@ IC= 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
•

Collector-Emitter Sustaining Voltage VCEO (sus) = 40 Vdc (Min) - 2N6486. 2N6489
= 60 Vdc (Min) - 2N6487. 2N6490
= 80 Vdc (Min) - 2N6488. 2N6491

•

High Current Gain - Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc

•

TO'220AB Compact Package

•

TO-66 Leadform Also Available

COMPLEMENTARY SILICON
POWER TRANSISTORS
40-60-80 VOLTS
75 WATTS

*MAXIMUM RATINGS
Rating

Collector-Emitter Voltage

Svmbol

2N6486
2N6489

2N6487
2N6490

2N6488
2N6491

Unit

VCEO

40

60

80

Vdc

VCB

50

70

90

Vdc

Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous

..
.
..

VEB
IC

Base Current
Total Power Dissipation

IB
Po

@TC=250C

Derate above 2SoC
Total Power Dissipation
Derate above 2SoC
Operating and Storage Junction
Temperature Range

T J. T stg

15

.

5.0
75
0.6

...

Po

@TA=250C

..

5.0

1.8

Adc

....

W/oC

.

Watts

..

0.014

Vdc
Adc

.....---65 to +150 ----...

Watts

wfOc
°c

THERMAL CHARACTERISTICS
Symbol

Characteristic
Thermal Resistance, Junction to Case

Unit

Max

1.67

Thermal Resistance, Junction to Ambient

70

R6JA

°C/W

*Indicates JEDEC Registered Data

4.0

!_<
z
o

2.0

TC
40 ~=::j:::;:=__t_T._t----1"'=__+_-_t--+_-_1
_TA

1.0

"" "-"-

.......

r--..... ...............
;::-+-.....:''-J--+---l

20 I---+--I--+-~

...........

"

40

60

80

100

120

140

C
D
F
G

H
J
K

L
N

n
R
S
T
U
V

-.......:::: ~

20

~n
B

60 I--+_-~"'..-+--i---i--~i----II----I

~

~
.p

-"'""'t-.-.

3.0

~
~

FIGURE 1 - POWER DERATING
80,--,-----r--,--,---,---,--,----,

STYLE 1
NOTES
PIN 1. BASE
1 DIMENSION H APPLIES TO ALL LEADS
2 COlLECTOR
2 DIMENSION L APPLIES TO LEADS I
3 EMITTER
AND 3
4 COLLECTOR

160

Z

985
406
064
361
241
279
036
1270
114
483
254
204
1.14
5.97
0.00
1.14

1

0
3
2
3
056
1427
139
533
3.04
279
139
648
1.27

INCHES
MIN MAX
0575
0.380
0160
0025
0142
0095
0110
0014
0500
0045
0190
0.100
0.080
0.045
0.235
0.000
0.045

- - CASE2.03
221A-02
TO-220AB

TC. CASE TEMPERATURE lOCI

1-301

0620
0405
0190
0035
0147
0105
0155
0022
0562
0055
0210
0120
0110
0.055
0.255
0.050

-

0.080

2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP

·ELECTRICAL CHARACTERISTICS (TC = 250 C unle•• otherwise noted.)

I

I

Characteristic

Symbol

Min

Max

40
60

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 200 mAde, IB = 01

Collector-Emitter Sustaining Voltage (11
(lC = 200 mAde, VBE = 1.5 Vdel

50
70
90

-

-

1.0
1.0
1.0

-

500
500
500
5.0
5.0
5.0

mAde

ICEO
2N6486, 2N6489
2N6487, 2N6490
2N6488,2N6491

=85 Vdc, VEB(offl
= 40 Vde, VEB(offl
=60 Vdc, VEB(offl
=80 Vdc, VEB(offl

-

/JAde

ICEX

2N6486,2N6489
2N6487, 2N6490
2N6488, 2N6491
= 1.5 Vdcl
= 1.5 Vdc, TC = 150oCI2N6486, 2N6489
o
= 1.5 Vdc, TC = 150 C12N6487, 2N6490
= 1.5 Vdc, TC = 150oC12N6488, 2N6491

Emitter Cutoff Current

-

lEBO

(VBE = 5.0 Vdc, IC = 01
ON CHARACTERISTICS
DC Current Gain

mAde

1.0

mAde

-

hFE

=5.0 Adc, VCE = 4.0 Vdcl
= 15 Adc, VCE = 4.0 Vdcl

Collector-Emitter Saturation Voltage

(lC
(lC

-

Vde

2N6486,2N6489
2N6487, 2N6490
2N648B, 2N6491

Collector Cutoff Current
(VCE = 45 Vde, VEB(offl = 1.5 Vdcl
(VCE = 65 Vde, VEB(offl = 1.5 Vdcl

(lC
(lc

-

80
VCEX

Collector Cutoff Current
(VCE = 20 Vde,IB = 01
(VCE = 30 Vdc, IB = 01
(VCE = 40 Vdc,IB = 01

(VCE
(VeE
(VCE
(VCE

Vdc

VCEO(susl
2N6486, 2N6489
2N6487, 2N6490
2N6488: 2N6491

20
5:0

150

-

-

1.3
3.5

-

1.3
3.5

Vdc

VCE(••tl

=5.0 Adc, 18 =0.5 Adcl
= 15 Adc, IB = 5.0 Adcl

Base·Emitter On Voltage
(lC = 5.0 Adc, VCE = 4.0 Vdcl
(lc = 15 Adc, VCE = 4.0 Vdcl

Vdc

VBE(onl

DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (21
(lc = 1.0 Adc, VCE = 4.0 Vdc, f test = 1.0 MHzl

fT

5.0

-

MHz

Small-Signa. Current Gain
(lC = 1.0 Adc, VCE = 4.0 Vdc, f

hfe

25

-

-

= 1.0 kHzl

'Ind,cates JEDEC RegIStered Data.
(lIPul.e Test: Pulse Width .. 3001'" Duty Cycle .. 2.0%.
(21fT = Ihfel. fteS!.
FIGURE 3 - TURN·ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

vee
+30

1000

v
SOD

C"-..

Re
Scope

Ir

,..-

.....

.....

0

O!""---.
51

D1

0

NPN
--PNP
TC=2SoC
VCC = 30 V
ICIlB = 10

t r• tf " 10 ns

Duty Cycle = 1.0%

-4 V

0

RB and RC varied to obtain desired current levals.
For PNP reverse all polarities.

0

01 must be fast recovery type, e.g.;
MB05300 used above IS ~ 100 mA
MSDS100 used below IS

~

100 mA

1-302

0.2

O.S

--

'd@VBE (off)

=

~ 5.0 V

-1-

5.0
2.0
1.0
IC, COLLECTOR CURRENT (AMP)

10

20

2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP

FIGURE 4 - THERMAL RESPONSE

ZoJCII) , ,II) ROJC
R'JC' 1.S7° CIW Ma.
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpk) - Tc' Plpk) 4>JCII)

t,

TIME (msl

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
0

There are two limitations on the power handling ability of a

100",-

""-

transistor. average junction temperature and second breakdown.
Safe operating _area curves mdlcate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor

500 w=

'"~

=
'"'-'.!d?

TJ-150 oC
-SECOND BREAKOOWN LlMITEO "---BONOING WIRE LIMITED
---THERMALLY LlMITED@TC'250C
1.0
CURVES APPLY BELOW RATEO VCEO
0.5
2N648S.2NS489
2NS487,2NS490-

0.2

0.1
2.0

loOms-

must not be subjected to greater dissipation than the curves indicate.

5.0ms=

depending on conditions. Second breakdown pulse limits are valid
for duty cyclesto 10% provided TJ(pk)":; 150°C. T J(pk) may be
calculated from the data in Figure 4. At high case temperatures,

The data of F .gure 5

-

10
20
40
SO
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

based on T J(pk I = 1SO"C; T C is variable

thermal limitations will reduce the power that can be handled to

dc-

values less than the limitations imposed by second breakdown

2NS488,2N6491
4.0

IS

80

FIGURE 6 - TURN-OFF TIME

FIGURE 7 - CAPACITANCES

5000

1000
700

t-

~s

~ 500

;::

--NPN
200 >-- - - PNP
VCC'30V
IcIIB' 10
100
:::: IB1- IB2
;:: TJ'250C
50
0.5
0.2

-

-

~ ;;;;;; ~

1-

c-

"'~

c:

300

;'!
I~ 200

100

==

h:: ~

-- ....

~;:;:

Cob

r--- r-

j

~

Cob

"

~

1000

- - NPN
PNP
25°C

-l-

r"--,

..... .....

t-- r--

Tr

70
1.0

2.0

5.0

10

20

IC, COLLECTOR CURRENT (AMP)

1-303

50
0.5

1.0

2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)

20

50

2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP

NPN

PNP

2N6486,2N6487,2N6488

2N6489,2N6490,2N6491

~=1500C

25°C

r-.,.

-55°C

'"

t-

~ 50

~

~

:>

r-...

:>

;

""c

20

;

l'.

~

VCE=2.oV
10
5.0
0.2

0.5

r-

200
z

""-

IT'-

~ 100

'"
"~

--

500

'-

200

I

FIGURE 8 - DC CURRENT GAIN

-

500

1.0
2.0
5.0
IC. COLLECTOR CURRENT lAMP)

10

100 -

=

~

25°C

-55°C

0

.......
20

~

VCE=2.0V

10
5.0
0.2

20

TJ'150oC

1.0

0.5

2.0

5.0

10

20

IC. COLLECTOR CURRENT lAMP)

FIGURE 9 - COLLECTOR SATURATION REGION
~ 2.0

w

~

'">

en
~

2~OC

TJ =

~ 1.8

~
w

1.4

~ 1.4

~

~

\

~

IC -1.0 A

c

~

II

,II

1.2

0.4

c

6

10

500
50
100 200
Ie. 8ASE CURRENT ImA)

20

1000

2000

-

I\,

4

[\.

~ 0.2
~ 0

0

8.0 A

0.8

c

~ 0.2

4.0A

IC-l.OA

1.0

g_ o.o.

8.0 A

4.0A

~ 0.6

5.0

TJ=25OC

1.6

c

1.2

~ 0.8

>

III

1.8

1.6

~;0' 1.0
~

2.0

5000

5.0

10

500
50
100
200
Ie. 8ASE CURRENT ImA)

20

1000 2000

5000

FIGURE 10 - "ON" VOLTAGES
2.8

2.8

I I

2.4 I-- I- TJ = 25°C

~

o

ii
>

:>

S
2.0 c

2.0

>

;o

/.
:I"

1.6
1.2

V8Elaat) =IC/18 - 10
0.8
VBE@VCE·2.0V
0.4

t--- r- V'CEI,,!) fillclle = 10
o
0.2

0.5

I I

2.4

---

..-:

~
w

1.6

;'"o

1.2

I
I
I
~V8E @VCE=2.0V

,...

0.4

o
10

20

-

0.2

VCEI"t) @ Ic/le = 10
0.5

1.0

2.0

5.0

IC. COLLECTOR CURRENT lAMP)

1-304

/

~V

VeElsat)@IC/le= 10

:> O.8

..,.

1.0
2.0
5.0
IC. COLLECTOR CURRENT lAMP)

//

I

>

/

h

TJ = 25°C

10

20

®

2N6497
2N6498
2N6499

MOTOROLA

5 AMPERE
POWER TRANSISTORS
NPNSILICON

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

250,3OO,360VOLTS
80 WATTS

· .. designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching
power supply applications.
•

High Collector· Emitter Sustaining
VCEO(susl = 250 Vdc (MinI = 300 Vdc (MinI = 350 Vdc (MinI -

Voltage 2N6497
2N6498
2N6499

•

Excellent DC Current Gain hFE = 10- 75 @ IC = 2.5 Adc

•

Low Coliector·Emitter Saturation Voltage
VCE(satl = 1.0 Vdc (Max) - 2N6497
= 1.25 Vdc (MaxI - 2N6498
= 1.5 Vdc (MaxI - 2N6499

@

IC = 2.5 Adc-

d'lftl-L

··MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol 2N6497
VCEO

Collector-Base Voltage

VCS

Emitter-Base Voltage

VES

Collector Current - Continuous

250

IC
IS

Total Power Dissipation @TC - 25°C

PD

300

350

Vdc

450

Vdc

6.0

Vdc

5.0
10

Adc

2.0

Adc

Watts
W/oC

4---65'0+150 _ _

TJ,Tstg

°c

THERMAL CHARACTERISTICS
ChII,.ct.iltic

Thermal Resistance. Junction to Case

I

Symbol

I

Max

I

Unit

I

ReJC

I

1.56

I

°C/W

-Indicates JEDEC Registered Data.

0-11-

Unit

400

80
_0.64

Derate above 2SoC
Operating and Storage Junction
Temperature Range

2N6499

-- --

---350

- Peak

Sase Current

2N6498

N

STYLE 1
PIN 1 BASE

2
3
4

DIM
A
8
C
D
F

G
H

l
I
Q

R
S

u
y

COLLECTOR
EMITTER
COLLECTOR

MILLIMETERS
MIN MAX
14.60 15.75
9.65 1029
4.06
482
064 089
361
3.73
241
2.67
279 3.93
036 0.56
12.10 1427
114
1.39
4.83
5.33
2.54 3.04
2.04 2.79
I 14 1.39
5.97
8.48
0.00
1.27
1.14
2.03

IICHES
Mil
MAX
0.575 0.620
0.380 0.405
0.160 0190
0025 0.035
0142 0.141
0.095 0105
0110 0.155
0.014 0.022
0.500 0.562
0045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.000 0.050
0.045
0.080

CASE 221A-02

TO·220AB

1-305

G

2N6497.2N6498.2N6499

I

'ELECTRICAL CHARACTERISTICS (TC' 25°C unlessolherwise nOled.)

I

Char....ri.tic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage 11)
(lC' 25 mAde, la • 0)

2N6497
2N6498
2N6499

Symbol

VCEO(sus)

Collector Cutoff Current

..I

Min

Typ

Ma.

250
300
350

-

-

-

Vde

mAde

Icex

(VCE " 350 Vde, VaE(offi • 1.5 Vde)
(VCE • 400 Vde, VSE(olf) " 1.5 Vde)
(VCE • 450 Vde, VSE(olfi • 1.5 Vde)

2N6497
2N6498
2N6499

-

(VCE' 175 Vde, VSE(off) " 1.5 Vde, TC" 1000C)
(VCE" 200 Vde, VSE(offi = 1.5 Vde, T C = 1000C)
(VCE = 225 Vde, VSE(off) = 1.5 Vde, Te = 1000 e)

2N6497
2N6498
2N6499

-

Emitter Cutoff Current

Unit

-

1.0
1.0
1.0
10
10
10
mAde

1.0

leso

(VaE • 6.0 Vde, IC' 0)
ON CHARACTERISTlCS."

DC Current Gain
(lC
(lc

-

hFE

=2.5 Ade, VCE = 10 Vde)
=5.0 Ade, VCE = 10 Vde)

Collector-Emitter Saturation Voltage
(lC = 2.5 Ade, la = 500 mAde)

VCE(sa,)
2N6497
2N6498
2N6499
All Devices

(lC = 5.0 Ade, IS = 2.0 Ade)

Ba.-Emitter Saturation Voltage

-

75

-

-

-

-

1.0
1.25
1.5
5.0

Vde

-

-

-

VaE(sa,)

(lC = 2.5 Ade, la = 500 mAde)
(lC" 5.0 Ade, la = 2.0 Ade)

10
3.0

-

Vde

-

-

-

-

1.5
2.5

5.0

-

-

MHz

150

pF

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product
(lC = 250 mAde, VCE = 10 Vdc, I = 1.0 MHz)

IT

Output Capacitance
(VCS = 10 Vdc,IE = 0, f = 100 kHz)

Cob

SWITCHING CHARACTERISTICS

Rise Time

'r

0.4

1.0

I.IS

I,

1.4

2,5

1.1'

'I

0.45

1.0

1.1'

(Vec = 125 Vde,lc = 2.5 Ade, lSI = 0.5 Ade)

Storage Time
(VCC = 125Ydc, IC" 2.5 Ade, VaE = 5.0 Vde, lal • la2" 0.5 Adc)

Fall Time
{VCC" 125Vde,lc" 2.5 Ade, lSI "IS2" 0.5 Adc}

-'ndu;ates JEDEC Registered Data.
{I} Pulse Test: Pulse Width <;3001.1" Du,y Cycle <;2.0%.
FIGURE 2 - TURN·ON TIME

FIGURE 1 - SWITCHING TIME TEST CIRCUIT

vcc

1.0

+125 V

O. 7

VCC"mv
IC/IB" 5.0
TJ" 25°C

5
3

]

O. 2

...~

O. I

........

.......

........

./

I,

L

_'0.0 7
0.0 5

l,. tf!::lOns
DUTY CYCLE" 1.0%
- 5.0V
AB and AC VAAIED TO OBTAIN DESIRED CUARENT LEVELS

0.03
0.02

01 MUST OE FAST RECOVERY TYPE, eq
MBD5300 USED ABOVE 10 =100 mA
MSD6100 USED BELOW 10 =100 mA

0.0 I
0.05 0.07 0.1

1-306

Id@VBElolt}" 5.0V

II II
0.2
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT lAMP}

V

-

r-

2.0

3.0

5.0

2N6497, 2N6498, 2N6499

FIGURE 3 - THERMAL RESPONSE
1.0
O. : =0-0.5
O.

- linn

~
... ::;
as:f o.3== f:::O.2
in'"

:i ~

......

0.2

",-

-

E~o.o 7 =

~

I--

1- 0.1

~ .....

~ ~ o.1 = 0:;0.05

tl~

0.0

:::: ~O.05

...

~

-'II
:g ~ 0.03 - :;;. 1-0.01
~O.02
...
0.0 1
0.01

SINGLE
PULSE

RBJClmlxt:: 1.56oCM'

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATtl
TJlpkl- TC: Plpkl R BJCItI

DUTY CYCLE, 0 :11/12

-Single Pulse

I

I III

0.02 0.03

0.05

IIIII
0.1

0.2

0.3

0.5

1.0

10
2.0 3.0
5.0
I. TIME OR PULSE WIDTH Imsl

I I II I IIIIII
20

30

50

100

I I II IIIII
200

300

500

1000

FIGURE 4 - ACTIVE-REGION SAFE OPERATING AREA
0
There are two limitations on the power handling ability of a

0

transistor: average junction temperature and second breakdown.

~ 5. 0
5

Safe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 4 is baEd on TC ::: 2SoC; TJCpkl is
variable depending on povver level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) ~15aoC. TJ(pk)
may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown
on Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.

,

i ~: -

r:

de

Te '" 25°C

i';;

SOms

I

~om'

~OO"'

_ Bonding Wire Limit

- - - - Thermal limit (Single Pulse)

Second Breakdown limit
Curws applv below rated VCEO

- 01
~
0.05
002
5.0 7.0

.'1.

"

'\\

2N6497
2N649S
2N6499

r-I=

10
20
30
50 70 100
200
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

300

500

FIGURE 5 - TURN-OFF TIME

FIGURE 6 - POWER OERATING
100

10
70
5.0
3.0

501
0.5

.....

0.1
0.05 0.07 0.1

If

"" "'-'"'" '-...,

Second Brllkdown Derating

~ 60

"

-

~
;::

~

Th,rm,1
40

2.0

30

5.0

1-307

I'..
Deratm~

"'-...

"-

'"~

It

20

0
0.2 03
0.5 07 1.0
IC. COLLECTOR CURRENT IAMPI

~

'"ot

~ 1.0

0.2

~80

r--..

2.0

0.3

~

VCC"'T25V

ICIIS: 5.0
TJ=' 25°C

I,

20

40

I"-...

" "-

60
SO
100
120
TC. CASE TEMPERATURE I'CI

i'
t'-..

140

160

2N6497,2N6498,2N6499

FIGURE 7 - DC CURRENT GAIN

F"GURE 8 - COLLECTOR SATURATION REGION

~

100

a
50
z

~

i

0

a

TJ -150°C

VCE~ 10V

-~Jo~

-

~ 2. 4

'\ [\

~1 6

~
2

0.8

~

o

50A

i
!'i

.........

.,..

1
002

005

01

02

05

CURR~NT

10

20

50

10

(AMP)

FIGURE 10 - TEMPERATURE COEFFICIENTS
+4. a

a

V

1.2
Tp 2SOC

S 1.0

VBE(••J" Ic/lB 0 5.0

-

V

"-+-1""
..H-I"'

0.8

~

VBE@VCE-IOV

~ 0.6

~ +3.0

/'

1/

,g

5+2.0

V

~ +1.0
w

'"=>
....

II

~

./V

III

o

0.05 0.07 0.'

0.2
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)

-3.0

3.0

-;'n t

..1"

JTI1Jr

-.Wl 1

FIGURE l1 - COLLECTOR CUTOFF REGION

1

15o~

8vafor VB~

0.05 0.07 0.1

5.0

L.--"

25~~~

VCE(••J

-550C to 250C

~

0.2 03
05 07 10
IC. COLLECTOR CURRENT (AMPJ

IL

L

"
20

30

50

FIGURE 12 - CAPACITANCE

104

'000
700
500

VCE" 200 v

21=

1

-1.0

~

I

2.0

0

'" -2.0

VCE( ••) I' Ic/lB • 5.0
V
~ ..... IC/IB 0 2.5
I I

0.2

;~Pflts tOiICII,,, hFE/3

Jl1

U

I

0.4

I

\

\

lB. BASE

FIGURE 9 - "ON" VOLTAGES

g
->

20~30A\

IC 010 A

001

50

1.4

"~

\

;;;

I~

30

11
TJo 25°C

~

['-..,l\

20

i

~

~

70
G.2 03
0.5 0.7 10
IC. COLLECTOR CURRENT (AMPJ

\
\

>

10

5.0
005 0.07 0 I

0

~ 3. 2

~

t-

u

"~

-

......

25°C

~

4.

C,b

~300

Tp 150°C

~

20a

~

..

lOOOC

ul00

~

TJ = 250C

t-

70

~ 50
~-

30
I

FOIWI,d
2 - -Reve,.
-0.4
-0.2
a
+0.2
+0.4
VBE. BASE·EMITTER VOLTAGE (VOLTSJ

10-

0

25°C

I0

+0.6

0.4 0.6 1.0

1-308

2.0

4.0 6.0 10
20
40 60
VR. REVERSE VOLTAGE (VOLTS)

100

200

400

®

2N6542
2N6543

MOTOROLA

5 AMPERE

NPN SILICON
POWER TRANSISTORS
300 and 400 VOLTS
1011 WATTS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
These devices are designed for high-voltage, high-speed, power switching inductive circuits wIlere fall time is critical. They are particularly
suited for 115 and 220 volt line operated SWITCHMODE applications such as:

Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facil itate "worst case"
design.

• Switching Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
Specification Features High Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

'MAXIMUM RATINGS

2N6542
2N6543

---

Rating
Coilector·Emltter Voltage

Symbol

2N6542

2N6543

Unit

VCEOlsus)

300

400

Vdc

Coliector·Em'tter Voltage

VCEXlsus)

350

450

Vdc

VCEV

650

850

Vdc

COllector-Emitter Voltage

Emitter Base Voltage

VEB

B.O

Vdc

Collector Current - Continuous
-Pe.kll)

IC
ICM

5.0
10

Adc

Base Current - Continuous

IB
IBM

5.0
10

Adc

Ie
IEM

10
20

Adc

Po

100
57.2
0.57

Watts

-Pe.k 111
Emitter Current - Continuous

-Peak 11)

Total Power Dissipation @TC = 2SoC
@TC=I00"C

Derate above 2SoC
Operating and Storage Junction
Temperature Range

NOTES:
1. DIMENSIONS a ANO v ARE DATUMS
2.
IS SEATING PLANE AND DATUM.

ITJ

3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q'

I tll."lo.ODs}@ITlv@1
FOR LEADS

I tl '."loo"}@Tlv@1 a@1
4 DIMENSIONS AND TOLERANCES PER

ANSI Y14.5,197l.

W/oC

-65 to +200

T J,T 519

STYLE 1
PIN 1. BASE
2 EMITTER
CASE COLI.ECTOR

°c

DIM

•
B
C

o

E

F

•

THERMAL CHARACTERISTICS

H

Ct.ractaristic
Thermal ReSistance, Junction to Case
MaXimum Lead Temperature for Soldering
Purposes: 1/S" from Case for 5 Seconds

Symbol

Mox

Unit

R8JC

1.75

TL.

275

°C/W
uc

J

•n
R

u
V

., ndicetes JEOeC Registered Data

CASE 1-05
TO-204AA

11) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.

1-309

2N6542,2N6543

*ELECTRICALCHARACTERISTICS ITC ~ 25°C unle.. otherwise noted.)
Min
OFF CHARACTERISTICS (1)
CoIlector·Emitter Sustaining Voltage (Table 2)
(lC· lOOmA, lB· Q)
Collector-Emitter Sustaining Voltage (Table 2, Figura 12)
IIc - 2.6 A, Velamp = Rated VCEX, TC = l000c)
IIc

= 5.0 Ade, Velamp '

Rated VCEO -100 V,

TC = l00 o C)

Vde

VCEOlsu.).
MJ4400
MJ4401

300
400

-

350
450
200
300

-

Vde

VCEXlsu.)
MJ4400
MJ4401
MJ4400
MJ4401

Unit

Collector Cutoff Currenl
IVCEV = Rated Valu., VBEloff) = 1.5 Vd.)
IVCEV = Rated Value, VBEloff) = 1.5 Vde, TC = 100°C)

ICEV

Collector Cutoff Current
IVCE = Raled VCEV, RSE = 50 II, TC = 100°C)

ICER

-

Emittar Cutoff Currant
IVEB - 8.0 Vde, IC = 0)

lEBO

-

-

mAde

-

0.5
3.0
3.0

mAde

1.0

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current With base forward biased
1= 1.0.lnon-repel",ve) IVCE = l00Vdcl

ISlb

Clamped Inductive SOA with base raverse biased

Adc

0.2.1
ISe. Figure 11)
IS •• Figura 12)

RBSOA

ON CHARACTERISTICS 111
DC Current Gam
IIc = 1.5 Ade. VCE
IIc = 3.0 Adc. VCE

-

hFE

= 2.0 Vdc)
= 2.0 Vdc)

Coliector·Emitter Saturation Voltage
(lC = 3.0 Ade. IS = 0.6 Adc)
IIc = 5.0 Ade, IB = 1.0 Ade)
IIc = 3.0 Ade. IS = 0.6 Ade. Tc = looOC)
Base·Emitter Saturation Voltage
IIc = 3.0 Ade, IB = 0.6 Ade)
IIc = 3.0 Ade, IS = 0.6 Ade. TC = looOC)

12
7.0

60
35

-

1.0
5.0
2.0

-

1.4
1.4

f,-

6.0

2S

MHz

Cob

50

200

pF

-

1"

Unit
jjS

VCElsal1

VSElsal1

Vdc

Vde

DYNAMIC CHARACTERISTICS
Current-Gain .- Bandwidth Product
IIc = 200 mAde. VCE = 10Vde. f,est = 1.0MHzl
Output Capacitance
IVCB = 10 Vde, IE = 0, f,e .. = 1.0 MHz)
SWITCHING CHARACTERISTICS
ReSistive Load ITabl.2)
Delay Time

Rise Time
Storage Time

(lC
IBI

Storage Time

Crossover Time
Fall Tima

=3.0 Alpkl, Velamp = Raled VCEX.
=0.6 A. VSEloff) = 5.0 Vdc , T C = l000C)

(lC - 3.0 Alpkl. Vclamp - Raled VCEX.
IBI = 0.6 A. VBEloff) = 5.0 Vd<, TC

...

-

4.0

Ie

0.6

-

jj'

tfl
tsv

-

0.8

jjS

0.8

-

I.

I nduelive Load, Clamped ITabi. 2)
Storage Time

Typ

Ir

Fall Time

Crossover Time
Fall Tim.

I
Symbol

0.05
0.7
4.0
0.8
MIX

'd

IVCC - 250 Vdc, IC - 3.0 A.
IBI = IS2 = 0.6 A.lp = 1001".
Duty Cycle" 2.0%)

= 250 CI

te
tli

-IndICates JEDEC Registered Data.
111 Pulse Test: Pulse Widlh = 300 jj', DUlY Cycle .. 2%.

1 ~310

-

0,3
0.2

-

jj'
jj'
jj'

jj'
jjS

jjS

2N6542.2N6543

DC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
100

- -

50

\.

z

:;;

to

30

I-

~

a<->

20

~

10

"w

~

"~w

1. 6

-

to

VCE < 20V
VeE - loV

7.0
0.2

0.3

0.5

0.7

1.0

"~
::

~

I." ~"
\~ \

F-""'" ~

2.0

~~I! 25°C

\

;

'.

......

~ t't-

25°C

5.0
0.05 0.07 0.1

2.0

~

TJ< 150°C

10

en

2

08

~
8

4

1.5 A- -

0.3 A

Ie" 0.05A

~

"'"

~~

3.0

I.

f--

3.0A

I

~

>

\

\

"-

-'-

0

5.0

2.0

5.0

10

20

50

100

200

500

1.0 k 2.0 k

IS. SASE CURRENT (mA)

IC. COLLECTOR CURRENT (AMP)

jII·.'
I,

FIGURE 3 - "ON" VOLTAGE

I III

1.2

Tj" 250C

10

"~

0.8

III!
1111

~
w

6

1.4

en

.....-:::

VSE( ..,,@ lells - 5.0

to

«
!:i 0.6

FIGURE 4 - TEMPERATURE COEFFICIENTS

-

I
II

. r~EIOt) @VfE<1 2.o V

">"> 0.4

I I

1111

-t~E:~t)@ 1~lIsl<5_0

02

.-;:::. p-

~

/1/
.....

0.05 0.07 0.1

0.2

0.3

os

07

10

20

30

..J.-.I--

I

-550CtO+~

~ -0 B

~~

-1

H-

-14
005 007 01

50

....
....

live FOR VeE

6

01

lC. COLLECTOR CURRENT (AMP)

FIGURE 5 - COLLECTOR CUTOFF REGION

2.0

3.0

5.0

1/

/

~

F=1z50C

TJ~25Je

Cib

700
500

~ 300
~ 200
G

,==~1000e

11:::= 750C

;;:

;:3

r-

r.i

./

1:::= 25°C
D_REVERSE

-04

0.7

)

a

1000

/

10- 1

1

05

~

'/
~tO+1500CrI
I
1.0

FIGURE 6 - CAPACITANCE
2000

VCE"250V

,/

03

-

IC. COLLECTOR CURRENT (AMP)

104

TJ - 150°C

:/

-550C to +2Soc-

?

le/ls < 2.0

o

IIIJ I I
'ove FORVCElsat)

~

I

1~OCto~ ~ -

llJ

8

t?

II

"Applies for le/ls';;; hFE/2.0

1

-0.2

70

50

FORWARD

30
10
05

)

+02

r-- r--.~

100

+04

+06

10

2.0

50

10

20

50

VR. REVERSE VOLTAGE (VOLTS)

VSE. SASE·EMITTER VOLTAGE IVOL TS)

1-311

-

Cob-

100

100

500

i
II

2N6542.2N6543

lIB

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC~

,

..... .....

-

"

'rvlfl~'fi-I-"i-

_I.,

I-I,~

h

V
VCE
la-

-

-

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv =Voltage Storage Time, 90% 'Bl to 10% Vcl amp
trY = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti =Current Tail, 10-2% IC
tc = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT = 1/2 VcClcltcl f
In general, trY + tfi '" tc' However, at lower test currents
this relationship may not be valid.
As. is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds Itc and tsvl which are
guaranteed at 1000C.

r----

9O%VClampJ ~90'l11C

./
IC .......

Vd ..p_

SWITCHING TIMES NOTE

"-

10'l1 ......
IC pK -

10%Vclamp

90%Ial

-

---

r-;~

-- -- -- -

,

--\- -"'-

TIME

TABLE 1 - INDUCTIVE SWITCHING
PERFORMANCE
IC
(AI

!g

tsv

trY

tti

lAS

lAS

lAS

1.0

25
100
25
100
25
100

0.70
1.20
1.10
1.60
1.10
1.7.0

0.22
0.37
0.09
0.42
0.16
0.45

0.21
0.19
0.12
0.19
0.19
0.37

3.0
5.0

to:

ttl

".
0.23

lAS

0.66
0.95
0.29
1.01
0.46
1.08

0.39
0.08
0.40
0.11
0.26

Note: All Data Recorded in the Inductive Switching
Circuit Shown in Table 2.

RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN'()N TIME
2.0 k

-..:

1.0 k
700
SO0

~

I,

==

:! 2.0 k
~

.200

100
0

!

.L

"I'.
IdOVBE(off) ·S.ov .

w

/

r-...

0.01

~II

t.o

..........
0.02

O.OS

0.1

0.2

O.S

1.0

..,

......

"""

200

I"-r-.
2.0

100
0.01

5.0

IC. COLLECTOR CURRENT (AMP)

0.02

0.05

0.1

0.2

O.S

1.0

IC. COLLECTOR CURRENT (mA)

1-312

1'1: ~\~c

"-

300

30

VCC - 2So V
Ic/la = 5.0

i""'-

700
SOD

so
20

-

I,

3.0 k

!300

':

FIGURE 9 - TURN'()FF TIME
10 k
7.0 k
S.O k

VCC=2SoV _
Iclla = S.O
D=2S 0 C.

2.0

S.O

10

2N6542.2N6543

TABLE 2 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
veEOI ...)

RESISTIVE
SWITCHING

VCEX("". AND INDUCTIVE SWITCHING

:SJs~

+ in

O,ive Circuit
+4V

o...rL

... -11 V

Set +Vin to Obtain 8 Forced
hFE = 5 and Adjult PW to
Attain Specified Puk 'ePW Vaned to Attam
Ie = 100mA

Lcoll " 80 mH Vee'" 10 V
ACOII:' 07 11
Vel amp (Undampedl

'r'"

01 2NUOS Q3 2N5815
Q22N6408 04 2N5877

DutY Cvcle .;;; 3%

f", kHz

Diodes 1 N4933

Leoi! = 1ao,uH
Reoil '" 0.05 n
Vee· 20V

2
0----0

'C"'3A
pw ... 100115
Sns
If'" SOns
Duty Cvcle " 2%
VCC· 250V

Vclamp = Rated VCEX V.lue

RL·830
01 so 1N5820or Equlv,
RS 20 n

=

INDUCTIVE TEST CIRCUIT

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

t,

Adjusted to

Obta,n

Ie

-5V
Test Equlpm.nt
Scope,TektronlCS
475

or Equ lValenl

FIGURE 10 - THERMAL RESPONSE
0
7 =0-05
5

3=
2

-

02

f-

01

I - ""'~

1=~05

-

7~002
5

....-:

-

...
PfJUl

-L'~-t--I

A< 001

ROJCItI - rltl ROJC
ROJe - 1.75 oCIW Max
CURVES APPLY fOR POWER
PULSE TRAIN SHOWN
READ TIME Al t 1
TJlpkl - TC - Plpkl ROJCltl

°

DUTY CYCLE, 0 :. IJ/t2

0.02 ) - - SINGLE PULSE
00 1
001

I II
002 003

II II
005

01

01

03

05

10

10

30

t, TIME hns)

1-313

50

10

II
10

30

50

100

100

300

500

1000

2N6542,2N6543

The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions shown.

SAFE OPERATING AREA INFORMATION
FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA
10

100~NpS
}.IS

t=

50

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .. the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on T C = 25 0 C; TJ( pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve
on Figure 13.
T J(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown.

0:

~ 2.0

r

"- P\

C

o

5001-15
250

:; 0.5
'"

~

o

u

9

C" 25°C

02

f\. \.. /

THERMAL LIMIT (SINGLE PULSEI
SECONO BREAKDOWN LIMIT
10m ,

00 5
0.02

jJS

5.0 ms

- ~ - BONDING WIRE LIMIT

-

0I

f--

~~~~~SV~~OL

0.0 I
50 70

I

10

10

50

30

70

100

"-

"-

2N6542,Pl

I I 2N6543,Pl'

BElOW

)

200

300

500

VCE,COLLECTOR EMITTER VOLTAGE (VOLTSI

FIGURE 12 - REVERSE BIAS SAFE
OPERATING AREA
50
VCEX{sus)

-

-+--

r - ~g~~g:m~~ M~~43,PI

REVERSE BIAS
For Inductive loads, high voltage and" high current
must be sustained Simultaneously during turn-off, In
most cases, With the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load line
shaping, etc. The safe level for these devices IS specified

FOR 2N6542,Pl, VCEO ANa
VCEX ARE 100 VOLTS LESS
26 A

I
VCEO(sus)

I

VBE(olll 5V
TC' IIOOOC

VCEX(sus)

I

100

200

400

300

500

VeE. COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 13 - POWER DERATING
100

~

I

t--..

"""- I'-"""-

0

THERMAL
DERATING

0

as Reverse Bias Safe Operating Area and represents the
voltage-current condition allowable during reverse biased
turn-off_ This rating is verified under clamped conditions
so that the device is never subjected to an avalanche
mode, Figure 12 gives the complete R BSOA characteristics,

SECOND BREAKDOWN
DERATiNG-

f'...

I"---.

I'--

1'-..

...... 1'--..

'"

I'-......

0

0

40

80

120

160

"'" """-

200

TC, CASE TEMPERATURE (OCI

1-314

®

2N6544
2N6545

MOTOROLA

Designers Data Sheet

8 AMPERE
NPN SILICON
POWER TRANSISTORS
300 and 400 VOLTS
125 WATTS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The 2N6544 and 2N6545 transistors are designed for high·voltage,
high·speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for 115 and 220 volt line op·
erated switch·mode applications such as:

Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per·
mits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.

• Switching Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
•

Deflection Circuits

Specification Features High Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

'MAXIMUM RATINGS
Rating
Collector-E mltter Voltage

Collector-Emitter Voltage
Collector-EmItter Voltage

Emitter Base Voltage
Collector Current Continuous

-Peak (1)
Base Current - Continuous

-Peak (1)
Emitter Current

Continuous
(1)

- Peak
Total Power Dissipation

@

TC - 2SoC

Symbol
VCEO(susl
VCEX(sus)
VCEV
VES
II'

IC-M
IS
ISM
IE
'EM
Po

@TC=1000C
Derate above 2SoC
Operating and Storage Junction
Temperature Range

T J,T stg

2N6544 2N6545

300
350
650

400
450
850
9.0

8.0
16
8.0
16
16
32
125
71.5
0.714
-65 to +200

Unit

Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts

W/oC

Characteristic
Maximum Lead Temperature for Soldering

Symbol

Max

Unit

ROJC
TL

1.4
275

°C/W
°c

Purposes; 1/8" from Case for 5 Seconds

Q

u
NOTES
1 DIMENSIONS Q AND V ARE DATUMS
2 [0 IS SEATING PLANE ANO DATUM
3 POSITIONAL TOLERANCE FOR
MOUNTiNG HOLE D

I _11"1000"19 IT Ive I
FOR LEADS
I _11''I0005le TI vel ael
4 DIMENSIONS AND TOLERANCES PER
ANSI Y145, 1913

°c

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

STYLE 1
PIN 1 BASE
2 EMlnER
CASE COLLECTOR

DIM
A
8
C

o
E
F
G
H

J
K

*Indicates JEDEC Registered Data

D

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.

R
U

MILLIMETERS
MIN MAX
3937
2108
635
762
097
109
140
178
3015BSC
IQ92BSe
5468SC
1689ase
1118 1219
381
419
2667
483
533
381
419

CASE 1-05
TO·204AA

1-315

2N6544, 2N6545

*ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwISe noted.!

I

I

Characteristic

Max

Min

Svmbol

Unit

OFF CHARACTERISTICS 11)
COllector-Emitter Sustaining Voltage

Vdc

VCEOlsus)
2N6544
2N6545

IIc=100mA,IB=0)

COllector-Emitter Sustaining Voltage
IIc = 4.5 A, Vclamp = Rated VCEX, TC = 100°C)
IIc = B.O A, Vcl amp = Rated VCEO -100 V,
TC = 100°C)

300
400

-

350
450
200
300

-

-

0.5
2.5

Vdc

VCEXlsus)
2N6544
2N6545
2N6544
2N6545

Collector Cutoff Current

mAde

ICEV

IVCEV = Rated Value, VBEloff) = 1.5 Vdc)
IVCEV = Rated Value, VBEloff) = 1.5 Vdc, TC = 100°C)
Collector Cutoff Current

IVCE = Rated VCEV, RBE = 50

n, TC =

ICER

-

lEBO

3.0

mAdc

-

1.0

mAde

12
7.0

60
35

-

1.5
5.0
2.5

-

1.6
1.6

100°C)

Emitter Cutoff Current
IVEB • 9.0 Vdc, IC = 0)

. SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

t = 1.0 sinon-repetitive) IVCE = looVdc)
ON CHARACTERISTICS 11)
DC Current Gain

-

hFE

IIC = 2.S Adc, VCE = 3.0 Vdc)
II C = 5.0 Adc, V CE = 3.0 Vdc)
COllector-Emitter Saturation Voltage

Vdc

VCElsat)

IIc = 5.0 Adc, IB = 1.0 Adc)
IIc = 8.0 Adc, IB = 2.0 Adc)
IIc = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base-Emitter Saturation Voltage

Vdc

VBElsat)

(lC = S.O Adc, IB = 1.0 Adc)
(lc = 5.0 Adc, IB = 1.0 Adc, TC = l000C)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

IIC· 300mAdc, VCE = 10Vdc,f'est= 1.0MHz)
Output Capacitance
IVCB = 10 Vdc, IE = 0, f test = 1.0 MHz)

MHz

IT

6.0

28

Cob

75

300

pF

lei

-

0.05

jlS

1.0

jlS

4.0

jlS

1.0

jlS

SWITCHING CHARACTERISTICS
Resistive Load

Delay Time

IV CC = 250 Vdc, IC = 5.0 A,
IBI = IB2 = 1.0 A, tp = 100 jlS,
Duty Cycle" 2.0%)

Rise Time

Storage Time

tr
's
tf

Fall Time

-

Inductive Load. Clamped

Storage Time
Fall Time

I

IIc = 5.0 Alpk), Vclamp = Rated VCEX,
IBI = 1.0 A, VBEloff) = 5.0 Vdc, TC = 100°C)

I

ts

I

tf

I

-

,
I

4.0

I

jlS

I

0.9

I

jlS

TVpical

Storage Time
Fall Time

(lC = 5.0 Alpk), Vcl amp = Rated VCEX,
IBI = 1.0 A, VBEloff) = 5.0 Vdc, TC = 2SoC)

·'ndicates JEDEC Registered Data.
11) Pulse Test: Pulse Width = 300

jlS,

1.2

ts

I

Duty Cycle .. 2%.

1-316

tf

I

0.18

jlS

I

jlS

2N6544, 2N6545

DC CHARACTERISTICS
FIGURE 1 - OCCURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

§

10 0
VCE - 3.0 V

70

-

TJ

0

-55'C

C

~

-P

10

~

1.6

~

1.2

;c

\.

H-

TJ o 250C

2:-

I

0 - r-l5'C

u

c

150':;"

0.....-

2.0

..-

'\ r\.
1\1"1\,

--

::

IC=0.25A

a:~

0.3

~_

l"'- t-

0.4

1.0

2.0

3.0

5.0 7.0

>

10

\.

0
0.005

~

0.02

0.01

0.05

FIGURE 3 - "ON" VOLTAGE

-Tp25'C

G

e...

I I
I I

S
c

w

'"'"~

0.6 -VBE(.n)@ VCE ~ 3.~ V

c

>

>~

V
V

V

r-

IC/IB

./

0.1

0.2

1. 5

ffi

1. 0

8

0

§

-0, 5

:

1.0

700
500

2.0

"" ~ "

-1. 0

3.0

5.0

7.0

2. 5
0.1

10

0.2

0.01

0.3

0.5 0.7

=

2.0k

~ 1.0 k

/

" r-....
0.2

3.0

5.0 7.0

VCC = 250 V
Ielis = 5.0

......,

~tf

I~~: ~~~C

I'...

700
500

...... ......
0,1

2.0

-

t,

0.5

1.0

2,0

....

......

300

0.05

-:sr.C to 250C

1.0

3.0 k

0-

0.02

-- - .....-r

FIGURE 6- TURN·oFF TIME

10 k
7.0k
S.Ok

0

3D

20

V

IC, COLLECTOR CURRENT (AMP)

VCC 250V _
IC/IB = 5.0
TJ=25'C

td@VSE.III=5.0V

L/
.J-

I I III
I II .'

i- 2.a

I'..

100
0
0

~

....

!

0

I

-55°C to 25°C

FIGURE 5 - TURN·ON TIME

1.0 k

2~'C to 1150.IC ~

*OVC for VCE{sat)

IC, COLLECTOR CURRENT (AMP)

2.0 k

5.0

I
I

*Apphes for le/ls.s;;;; hFE/3

~
5 _ °VBlorVBE
~ -1.

I

0.5 0.7

2.0

250 C to 1500C

0

J
0.3

1.0

2. 0

~ a, 5

IT

o

2. 5

!~
<:;

5.0
"w20
I'
~

-JCE(~t)

0.2

0.5

w

1 J

0.4

V

,/

VBE(sat)@ICIIB o 5.0
I '1 .l~

z:.

_
0.8

0.2

FIGURE 4- TEMPERATURE COEFFICIENTS

1.2

v; 1.0

0.1

IB, BASE CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

1.4

5.0A

\

8

0.5 0.7

V· 5

0.8

tl

0.2

1

LOA

c

7.0
5.0
0.1

\

200

5,0

100
0.01

Ie, COLLECTOR CURRENT (AMP)

0.02

0.05

0.1

0.2

0.5

1.0

IC, COLLECTOR CURRENT (rnA)

1-317

/

2.0

5.0

10

10

2N6544, 2N6545

FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA

FIGURE 8 - REVERSE BIAS SAFE
OPERATING AREA

20
10

10

I
I

ct 5.0

"

cc

a~

1.0ms

de

~ 2.0
~ 1.0

0.5~~

is,a
~

5.0 ms

....
15

0.5

~

0.2

g 0.05~
0.005
0.002
5.0

a

TC 25°C
- BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSEI
SECOND BREAKDOWN LIMIT

~ O.l~_

TURN OFF LOAD L11'1E
80UNDARY FOR 2N6545.
FOR 2N6544. VCEO AND
VCEX ARE 100 VOLTS LESS.

6.0

'"o~ 4.0

I

j

o

u
~2.0

2N6544
2N6545

r- VBE(off)" 5.0 V

VCEO(susl

TC" 100°C

VCEX(susl

CURVES APPLY BELOW RATED VCEO
7.0

10

20

50

30

70

100

200

300

500

o
o

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

VCEX(susl

4.5A

200

100

1

400

300

500

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 9 - POWER DERATING
100

~

'"

0

THERMAL
DERATING

t-0

...........

I"

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on IFigure 7. may be found
at any case temperature by using the appropriate curve on
Figure 9.
TJ(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limi·
tations imposed by second breakdown. The reverse biased
safe operating area (Figure 8) is the boundary the load line
may tra:verse ·During turn-off.

.,

t-.....

r--....

SECONO BREAKDOWN_
t-DERATING

f'...

i'-.
~

J"...

.........

r--..,

"-

,'"

.....
.......

0

0
40

80

120

160

200

TC. CASE TEMPERATURE (OCI

FIGURE 10 - THERMAL RESPONSE
10
07
05

==

BOJc(tl- r(tl ROJC
ROJC 'l.4°CIW Max - -

o CURVES APPLY FOR POWER-

\.

03
02

"

007
005

I\.

002

--rrn ==

02
01
005
0.02
001
SINGLE PULSE

005

01

02

0.3

O.~

==

P(okl
...

.-C-

-,-

t:~J

f=
= r-

DUTY CYCLE. D = II/t2 -

llllillill

001
0.02 003

-

TJ(pkl-TC = ;(pkl ROJC(tl

O=O~

01

0.03

=
-

PULSE TRAIN SHOWN
REAO TIME AT q

iiiiI

.\.

10

20

30

~

0

10

t, TIME (ms)

1-318

20

30

50

100

200

300

~OO

1000

2000

®

2N6546
2N6547

MOTOROLA

Designers Data Sheet

15 AMPERE
NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

300 and 400 VOLTS
175 WATTS

The 2N6546 and 2N6547 transistors are designed for high-voltage,
high-speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for 115 and 220 volt line operated switch-mode applications such as:

Designer's Data for
"Worst Case" Conditions

•

Switching Regulators

•

PWM Inverters and Motor Controls

•

Solenoid and Relay Drivers

•

Deflection Circuits

The DeSigners Data Sheet permits the deSign of most CirCUits
entirely from the information presented, Limit data - representing
device charactenstics boundaries are given to faci! itate "worst case"

Specification Features High Temperature Performance Specified for:

design.

Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

STYLE 1
PIN 1. lASE

'MAXIMUM RATINGS
Rating
Collector"Emltter Voltage
Collector·Emltter Voltage

Collector-Emitter Voltage
Emitter Base Voltage

Collector Current

Continuous

-Peak (1)
Base Current - Continuous

- Peak (1)
Emitter Current - Continuous

- Peak (1)
Total Power Dissipation @ T C = 25°C

Symbol
VeeO(sus)
VeEX(susl
VeEV
VeB
Ie
leM
IS
IBM
Ie
IEM
PD

@Te= 1000 e
Derate above 25°C
Operating and Storage Junction

TJ,T stg

2N6546 2N6547
300
400
450
350
650
850
9.0
15
30
10
20
25
50
175
100
1.0
-65 to +200

Unit

Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc

MaxImum Lead Temperature for Soldenng

Q

NOTES
, DIMENSIONS a AND v ARE DATUMS
2
IS SEATING PLANE AND DATUM
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q

CD

FOR LEADS

I • 11.13100O>I@T I v@1 a@1

wloe

4 DIMENSIONS AND TOLERANCES PER
ANSI YI4S, 1973

°e
MILliMETERS
INCHES
MI •
MAX
MIN
MAX
3937
1550
2108
080
C
6.35
'62 0250 0300
097 109 0038 0043
E
140 178 0055 070
f
3015Bse
1187 se
G
1092BSC
04308se
H
546 Bse
021S8se
J
1689Bse
0665Bse
K 1118 1219 0440 0480
a 381 419 0150 0165
A
2667
1050
U
483 5.33 0190 0210
V
381 419 0150 0165

• ,M
A

THERMAL CHARACTERISTICS
Characteristic

2. EMlnER

CASE comcroA

I • II"IOOO>I@ I T Iv@1
Watts

Temperature Range

Thermal Resistance, Junction to Case

,

Symbol
ReJC

TL

Max
1.0
275

Purposes: 1/8" from Case for 5 Seconds
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width =- 5.0 ms, Duty Cycle <; 10%.

Unit

°e/W

°c

•
•

CASE 1-05
TO-204AA

1-319

2N6546,2N6547

*ELECTRICAL CHARACTERISTICS ITc = 25°C unless otherwise noted.!

I

I

Characteristic

Symbol

Min

Max

300
400

-

Unit

OFF CHARACTERISTICS III

Collector-Emitter Sustaining Voltage

Vde

VCEOlsusi
2N6546
2N6547

IIc = loomA, IS = 01

COllector-EmItter Sustaining Voltage

Vde

VCEXlsusi

IIc = 8.0 A, Vclamp = Rated VCEX, TC = 1000 CI

2N6546
2N6547

·350
450

-

IIc = 15 A, Vel amp = Rated VCEO - 100 V,
TC = 1000CI

2N6546
2N6547

200
300

-

Collector Cutoff Current

mAde

ICEV

-

IVCEV = Rated Value, V8Eloffi = 1.5 Vdel
IVCEV = Rated Value, VBEloffi = 1.5 Vde, TC = 1000 CI
Collector Cutoff Current

IVCE = Rated VCEV, RBE = 50

n, TC

ICER

-

IESO

1.0
4.0
5.0

mAde

-

10

mAde

12
6.0

·60
30

-

1.5
5.0
2.5

-

-

1.6
1.6

tr

6.0

28

MHz

<':ob

,.5

500

P

t<:t

-

0.05

~s
~s

ts

1.0
4.0

tf

0.7

~s

5.0

~s

1.5

~s

= 1000CI

Emitter Cutoff Current
(VEB = 9.0 Vde, IC = 01

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
t = 1.0 s (non·repet,t,vel IVCE = 100 Vdel

ON CHARACTERISTICS (11

DC Current Gain

-

hFE

(IC = 5.0 Ade, VCE = 2.0 Vdel
IIC = 10 Ade, VCE = 2.0 Vdel
Collector-Emitter Saturation Voltage
IIC = 10 Ade, IB = 2.0 Adel
IIc = 15 Ade, IS = 3.0 Adel
IIc = 10 Ade, Ie = 2.0 Ade, Tc = 1000 CI

VCElsati

Base-Emitter SaturatIon Voltage

VeElsatl

Vde

-

Vde

IIC= lOAde, IB=2.0Adei
IIc = 10 Ade, IS = 2.0 Adc, TC = l000C
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIC = 500 mAde, VCE = 10 Vde, f test = 1.0 MHz I

Output Capacitance
(VCB

= 10Vde,IE =

0, f test = 1.0MHzI

SWITCHING CHARACTERISTICS
Resistive Load

Oelav Time
RiseT.me
Storage Time

IVCC = 250 V, IC = 10 A,

tr

IBl = IB2=2.0A,tp= 100~s,
Duty Cycle .. 2.0%1

Fall T,me
I nductlve Load, Clamped

Storage Time

I

Fall Time

I

Storage Time
Fall Time

IIc = 10 A(pkl, Vclamp = Rated VCEX,lSl = 2.0 A,
VBE(offi = 5.0 Vdc, TC = looo CI
IIC= 10Alpkl, Vclamp= RatedVCEx,lSl =2.0A,
VSEloffJ = 5.0 Vdc, T C = 25 0 CJ

-

ts

I

tf

I

tf

I

ts

·'ndicates JEOeC Registered Data.
11 J Puse Test: Pulse Width = 300 ~s, Duty Cycle = 2%.

1-320

I

~s

Typical
2.0

~s

0.09

~s

2N6546, 2N6547

TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

100
TJ=1500e

0

z
<1

0

~

0

3

'"
i:l

20

'"

2~Oe

I

J

c

-55 0e

),0

5,0
0,2

'",-""

0,3

IIII
1.0

0,5

~

,

.....

I-

~

~

~

.....

i

::
~

L__

VeE" 2,OV
I velE - 10 lV
2,0 3,0

1. 6

c

-"

-

10

iJ=~50~_

~

..,...."

u

~

~ 2.0
c

c

\\
,

5,0 ),0

10

~_

le=2,OA

1. 2

-

0,4

~

\.
0,2

0,0) 0,1

c

~

-

,I

1

VaElsat)@lella=5,0

0,8

w

~

c

h

'l

'" 1.5

-TJ=250C

~ 1.0

~VaElon)@ VeE" 2,OV

0.6

-

-:

:g

~ o. 5
8

I--

0,3

0,5

1.0

ffi

-1.0

!

-1.5r--

<

10

2~OC io 1~.le

-2,5
0,2

20

V

Tr1

/

/

1'5~C
~

Ova for VaE

l- t-"

0,3

II

0,5 0,)

2,0

1.0

i-""'"

-550e to 250C
3,0

I I [I

5,0 ),0

10

20

FIGURE 6 - TURN-OFF TIME

10 k

-

),0

-

k

Vce - 250 V
Iclla = 5,0
lal -182
TJ = 250C

t,

5,0 k
3,0 kl'..
2,0 k

...
~ 300
'" 200

"

!1.0k

)00
'..."- 500
~

~

100

III
I II

IC. COLLECTOR CURRENT lAMP)

Vee· 250 V
Iclla·5,0
TJ = 25°C

t'-...

5,0) ,0

250lCto

FIGURE 5 - TURN-ON TIME

1.0k
)00
500

3,0

::J-l-

i' -2.0

5,0 ),0

tr

-

-550C to 250C

Ie. COLLECTOR CURRENT lAMP)

3,Ok
2,0 k

~ ~~E/3

"OVC for VCEI"t)

-0. 5

-I-3,0

2,0

1,0

II

i=
~

2,0

f1r Ifllr

w

or

o
0,2

pp

c::; 1.0

/

~eEI~t) ~ 1~/lal=151

- "i "l'

ffi

....

>
>- 0,4
0,2 -

0,5 0,)

FIGURE 4 - TEMPERATURE COEFFICIENTS

~ 2, 5
2,0

~

I I
I I

0,3

IC. COLLECTOR CURRENT lAMP)

FIGURE 3 - "ON" VOLTAGE

1.2

f-

l-

....

0

20

I
I~A

\

\

8
>

lOA- f-

\

o. a

Ie. eOLLECTOR CURRENT lAMP)

1.4

5,OA-

I"td@VaElolf)= 5,0 V

If

300

)0

....

200

.A

50
30
0,02

0,5

0,1

0,2

0,5

1.0

2,0

5,0

10

20

100
0,02

0,05

0,1

0.2

0.5

1.0

2,0

IC, COLLECTOR CURRENT lAMP)

IC. COLLECTOR CURRENT lAMP)

1-321

5.0

10

20

2N6546, 2N6547

MAXIMUM RATED SAFE OPERATING AREAS
FIGURE 8 - REVERSE BIAS SAFE
OPERATING AREA

FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA
50

5.0 ms

10
5.0

~

~

>~ 2.0
-

20

10ns

20

~~~~g:~yL~~~ i~~~41.1
C~~i~~5:~O~WL ~~~ES~

1.0 ms
100",$

13

de

I

1.0

~

g

0.5

-

c

0.2
O. 1

VCEXlsus)-

TC.- 25°~
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSEI
SECDND BREAKDDWN LIMIT

8 0.05
!;} 0.02

.1

T

VBE(olt)" 5 V
-TC"lDOoC- f- VCTOISUS)
)

~~~:m~ ~

0.0 1 CURVES APPLY BELOW RATED VCEO ~
0.005
20
30
50 10 100
5.0 1.0 10

200

a

300 400

a

100

~ ::-.....

..............

"'" "'" I'-...

80

.

THERMAL
DERATING

~ 60
z

~
:li
c

SECOND BREAKDOWN
OERATING-

..........

"-

iUl

r---..

...... r-......
..............

~

'"~

"

~ 20

o
o

80

40

120

160

TC, CASE TEMPERATURE laC)

~
::::l

ic

~~
...l

~
'">-

o. 5

0.1

O. 1

--

0.03

f--

......

~ 0.0 1 .....
0.01

f-'1
0.02

f-'

t~
-r~~

I

01

ZeJC(t)" ,It) ROJC
RaJC "1.00 erw Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJI,k)- TC" P(,k) ZeJClt)

DUTY CYCLE, 0 "11/t2

SliG\ErW~1
0.05

i

PI,k)

......

0.02

500

~

0.01f-- 0.05
0.05

400

THERMAL RESPONSE

-;;;;;.--

0.2

0, 2

~

~

200

D "0.5

5 0.02 r - ~.I-

""

FIGURE 10 1.0
O. 1

~ o.3
~

"'"

300

200

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 2So C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC .,. 2So C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found
at any case temperature by using the appropriate curve on
Figure 9.
T J(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 9 - POWER DERATING

~
t:;

VCr(SU')

VCE, COLLECTOR·EMITTER VOLTAGE /VOLTS)

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

100

)

III1I
0.2

as

1.0

2.0

5a

t, TIME (ms)

1 c322

10

I

I
20

I I II1111
50

100

I I
200

I

I I III
500

10k

®

2N6548
2N6549

MOTOROLA

DUOWATT
NPN SILICON DARLINGTON
AMPLIFIER TRANSISTORS

NPN SILICON
DARLINGTON AMPLIFIER
TRANSISTORS

.. designed for amplifier and driver applications where high gain is
an essential requirement, low power lamp and relay drivers and
power drivers for high·current applications such as voltage regulators.
•

High DC Current Gain hFE = 25,000 (Min) @ Ie = 200 mAdc - 2N6548
= 15,000 (Min) @ IC = 500 mAdc - 2N6548

•

Coliector·Emitter Breakdown Voltage BVCES= 40 Vdc (Min) @IC= 100llAdc

•

Low Collector· Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 1.0 Adc

•

Duowatt Package 2 Watts Free Air Dissipation @ T A = 25 0 C

MAXIMUM RATINGS
Symbol

Value

Unit

·Collector·Emitter Voltage

VCEO

40

Vdc

Coliector·Emitter Voltage

Rating

VCES

40

Vdc

"Collector-Base Voltage

VC80

50

Vdc

·Emitter-Base Voltage

VE80
IC

12
2.0

Adc

18

100

mAde

Po

2.0
16

mW/oC

·Collector Current
.. Base Current

Continuous

Continuous

·Total Power Dissipation
Derate above 2SoC

@

T A - 25°C

Po

Total Power Dissipation@TC= 2SoC
Derate above 25°C
·Operating and Storage Junction
Temperature Range

• Solder Temperature, 1/16" from Case for

Vdc

Watts
mW/oC

T J,T stg

-

260

°c

°c

10 Seconds

THERMAL CHARACTERISTICS

I
I

Symbol
AeJA

I

Thermal Resistance, Junction to Case

I

AeJC

I

Characteristic

Max
62.5
12.5

o

Watts

10
80
-55 to +150

Thermal Resistance, Junction to Ambient

STYLE 1
PIN 1 EMITTER
2 BASE
3. COllECTOR
4 COllECTOR

I
I

·Indicates JEDEC Registered Data.

I

Unit
°CIW
°CIW

MilLIMETERS
INCHES
DIM MIN MAX
MIN MAX
0.B60
O.BBO
21.84
22.35
A
B
9.91 1041 0390 0410
4.19
4.44 0.165 0.175
C
0.61
D
0.11 0.024 0.02B
3.68
3.94 0.145 0.155
F
2.41
2.61 0.095 0.105
G
1.96 0.061 0.011
H
1.10
0.48
0.66 0.019 0.026
J
K 12.10
- 0.500
2.03 0.010 0.080
1.18
L
9.91
10.16 0.390 0.400
N
Q
3.81 0.140 0.150
3.56
2.41
2.61 0.095 0.105
R
T 13.21 13.91 0.520 0.550

-

CASE 306.()4
TO·202AC

1-323

2N6548, 2N6549

lIB

"ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted.1

I.

I

Max

Symbol

Min

BVCES

40

-

Vde

Collector-Base Breakdown Voltage
(lC = 100 ~Ade, IE = 01

BVCBO

50

-

Vde

Emitter-Base Breakdown Voltage

BVEBO

12

Characteristic

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage(1)
(IC

(IE

= 100 ~Ade, VeE = 01

= 10 ~Ade,

IC

Colfector Cutoff Current
(VCS

Iceo

100

nAdc

IEeO

100

nAdc

=30 Vde, IE '" 01

Emitter Cutoff Current

(VES

Vde

= 01

= 10 Vde, IC = 01

ON CHARACTERISTICS (11

DC Current Gain

-

hFE

= 5.0.Vdel

2N6548
2N6549

25,000
15,000

150,000
150,000

(lC

= 500 mAde, VCE = 5.0 Vdel

2N6548
2N6549

15,000
10,000

-

(IC

= 1.0 Ade, VCE = 5.0 Vdel

2N6548
2N6549

5,000
3,000

-

-

1.5
2.0

(lC = 200 mAde, VCE

Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, Ie
(lc = 2.0 Ade, IS

VCE(satl

= 2.0 mAdel
= 4.0 mAdel

Base-Emitter Saturation Voltage
(lC

= 1.0 Adc,

Vde

VSE(,atl

-

VBE(onl

2.0

Vde

-

2.0

Vde

Ihle l

1.0

-

-

Cob

-

7.n

pF

20,000
15,000

-

IB = 2.0 mAdel

Base-Emitter On Voltage
(I~

-

= 1.0 Ade, VCE = 5.0 Vdel

DYNAMIC CHARACTERISTICS
High Frequency Current Gain
(It = 200 mAde, VCE = 5.0 Vde, I

= 100 MHzl

Output Capacitance
(VCB

= 10 Vde,

IE

=0, 1= 1.0 MHzl

Small-Signal Current Gain

-

hIe

(lC = 50 mAde, VCE = 5.0 Vde, I

= 1.0 kHzl

2N65>18
2N6549

-

* Indicates JEDEC Registered Data
111 Pulse Test: Pulse Width .. 300

~s,

Outy Cycle .. 2.0%

TYPICAL CHARACTERISTICS
FIGURE 1 - ACTlVE·REGION SAFE-OPERATING AREA

4.0

-a

"
~
a

!>

2.0 I-H+*iol'~

0-

'"
0

~
8

~

I .InlJ\.

'+-+-+-d-+C-+1'&1.-11.0 In'",
TC = 25'C

0

"OOM'

r-

'\

:'\..

\

O.6
O.4

\

02

O. 1
0.06
0.04
0.4

TJ=150'C'"
- - - BONDING WIRE LIMIT
- - - THERMAL LIMIT, SINGLE PULSE, TC = 25'C
SECOND BREAKDOWN LIMIT
0.6

1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

I~
40

1-324

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curVes indicate.
The data 01 Figure 1 is based on T J(pkl = 1500 C; Te i. variable
depending on conditions. Second breakdown pulse limits are valid
for duty evele. to 10% provided T J(pkl ... 150o C. T J(pkl mav be
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

2N6548, 2N6549

TYPICAL CHARACTERISTICS

(continued)

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 - "ON" VOLTAGES

300 k

2.0

VCP 50V

200 k

T}' 2~O~

r----

L

1.8
100 k

z

V

TJ'= 125°C

:;:( 70k

'"....

VaElsaU Olcila

50 k

~

25°C

..J...l..t+I'" ~
VaElon) 0 VC~ = 5~0 V
LLUJ

~ 30 k
~ 20k

I'"

-55°C

"'i

~

10k
70k
50k

VCE(sau@llc/la' 500

0.8

3.0 k
20

50

30

70

100

200 300
500 700 1.0 k
IC. COLLECTOR CURRENT ImAI

0.6
20

2.0 k

50

30

IIIII
70

--

V

100
200 300
500 7110 1.0 k
IC. COLLECTOR CURRENT (rnA)

+0.5
TJ = 25°C

o
>

I j II
II II

.5 -0.5

~ -0.10

;o

t::

~ -0.15

"

200 rnA

~ 1.2

~j Q.8

500 rnA

8

LOA

w

t--

t;:

IIIII
25°C to 125OC~

~ -0,35

IC

£; 0.4

II III

uJ

0.5

50mA

1.0 2.0

5.0

20

50

100 100

-0.45
20

JL 1-[ I

500 1.0 k 2.0 k 5.0 k

30

50

II

70

lB. BASE CURRENT I"AI

.....

kJ::;!:::Rif"

OVB for VBe

i- O•40 I="""
10

>-- ~~1250C -

-0.20

~ -0.30 (---

/:

1lJ.H:::/....

~ -0.25

1\

8

25°C to 1250C

*(NC for VCElsatl

"

2.0A

IIIII

*Apptles for le/tB" hFE/2

G

3;

~ 2.0

ffi 1.6

2.0k

FIGURE 5 - TEMPERATURE COEFFICIENT

FIGURE 4 - COLLECTOR SATURATION REGION

~ 24

./

.....
.....

=!!--

-55°C to 25 0 C

IIIII

IIIII

100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT ImAI

20k

FIGURE 6 - THERMAL RESPONSE
1.0
O.
7 0 = 0.5
0.5
~c

~~ 0.3
0.2

w-l

~~
!Z~

~~

~~

-

:i;::;

o. 1

...

::;;iiiii'

0.1

007

SlIlgte Pulse

:=_~ 0.05

-

-

0.05

ffiJl --

Single Pulse

-t\;-j

.1'"

I
0.01

0.02

Duty Cycle, D '= t1/t2

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20
I. TIME Im~

1-325

50

1110

2110

500

1.0 k

ZOJAItI =rltl ROJA

ROJA =6~.50C/W Max
o CURVES APPLY FOR POWER

Plpk)

~~ 0.03 ...... 0.02
0.01
0.02
0.01

ZaJCItI - rlU ROJC
R8JC::: 12.50C/W Max

2.0 k

PULSE TRAIN SHOWN
READ TIME AT II
TJlpki - TC =PlpkIROJCII)
5.ok 10k

20k

50k lOOk

2N6551
2N6552
2N6553

®

MOTOROl.A

lIB
DUOWATT

NPN SILICON ANNULAR
AMPLIFIER TRANSISTORS

NPN SILICON
AMPLIFIER TRANSISTORS
... designed for general-purpose, medium-voltage, medium power
amplifier and driver applications; series, shunt and switching regu.
lators, and low and high frequency inverters and converters.

•

High Collector-Emitter Breakdown Voltage BVCEO = 100 Vdc (Min) @ IC = 1.0 mAde ~ 2N6553

•
•

Duowatt Package - 2 Watts Free Air Dissipation @TA=25 0 C
Complements to PNP 2N6554/5/6

MAXIMUM RATINGS
Rating
"Collector-Emitter Voltage
·Collector-Base Voltage
.. Emitter-Base Voltage
"Collector Current Continuous

Peak III
"Base Current
·Total Power Dissipation @ T A - 2SoC
Derate above 25°C
Total Power Dissipation @TC = 2SoC
Derate above 25°C
·Operating and Storage Junction
Temperature Range

·Solder Temperature. 1/16" from Case
for 10 Seconds

Symbol

ZN65511 ZN655ZIzN6553
80 I 100
60 I
60 I
80 I 100
5.0
1.02.0100
18
2.0
Po
16
10
Po
80
TJ,Tstg ------55 to + 1 5 0 VCEO
VCBO
VEBO
IC

-

.

.

260-

Unit
Vdc
Vdc
Vdc
Adc
mAde

Watts

mW/oC
Watts
mW/oC
°c
°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Case

Symbol

MIX

Unit

R8JA
R8JC

62.5
12.5

°C/W
°C/W

-Indicates JEDEC Registered Data.
III ';;10 ms,';; 50% Duty Cycle

STYLE 1
P1N 1. EMITTER
1 BASE
3. COLLECTOR
4 COLLECTOR
MILLIMETERS
DIM MIN MAX
A 11.84 11.35
B
9.91 10.41
C
4.39
4.65
D
0.58 0.14
F
3.56 4.06
G
1.41
1.61
H
1.10
1.96
J
0.48 0.66
K 11.19 11.95
L
1.65
1.03
9.91 10.16
N
Q
3.56
3.81
1.01
1.15
R
1.81 9.14
T

INCHES
MIN MAX
0.860 0.880
0.390 0.410
0.173 0.183
0.013 '0.029
0.140 0.160
0.095 0.105
0.001 0.01.1
0.019 0.016
0.480 0.510
0.065 0.080
0.390 0,400
0.140 0.150
0.041 O.~
0.310. .0.360

CASE 306-04
TO-2D2AC

1-326

2N6551,2N6552,2N6553

·ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted.)
Z

I

I

CINI,lICtwistic

Max

Min

Symbol

Unit

OFF CHARACTERISTICS
COllector-Emitter Breakdown Voltage

(lC

1.0mAde,IB

z

100 /lAde, IC

Z

Vde

-

60
80
100

2N6551
2N6552
2N6553

= 0)

-

5.0

BVEBO

Collector Cutoff Current

(Vce
IVCB
IVCB

-

BVCBO

= 100/lAde, I.E = 0)

Emitter-Base Breakdown Voltage

liE

-

60
80
100

2N6551
2N6552
2N6553

CQllpctor-Sase Breakdown Voltage

(lC

Vde

BVCEO

=0)

Vde
nAdc

ICBO

= 40 Vde, IE = 0)
=60 Vde, IE = 0)
=SO Vdc, IE = 0)

-

2N6551
2N6552
2N6553

100
100
100

-

Emitter Cutoff Current
IVEe = 4.0 Vde, IC = 0)

100

lEBO

nAdc

ON CHARACTERISTICS 11)

-

DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE 1.0 Vde)
(lC = 250 mAde, V CE = 1.0 Vdcl
(lC = 500 mAde, VCE = 1.0 Vde)

hFE

Collector-Emitter Saturation Voltage

VCE(s.t)

Z

(lC
IIc

300

-

Vde

-

= 250 mAde, IS = 10 mAde)
1.0 Adc, IB = 100 mAde)

0.5
1.0

-

Z

Base-Emitter On Voltage

IIc

-

60
80
60
25

VBElon)

1.2

Vdc

375

MHz

18

pF

= 250 mAde, VCE = 5.0 Vdc)

OYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

IIc

100 mAde, VCE

Z

Z

5.0 Vde, f

Collector-Base Capacitance

IVCB

75

IT

=20 MHz)
Ccb

= 20 Vde, IE = 0, f = 1.0 MHz)

* Indicates JEDEC Registered Data
11) Pulse Test: Puis. Width .. 300 /l<, Duty Cycle .. 2.0%

TYPICAL CHARACTERISTICS

~ ~~GURE 1 - CURRENT -GAIN - BANDWIDTH PRODUCT
~

,

VCP 5.0V

t;

~. 200

TJ =25 DC

f

I---'

x
>co

V

z~ 100

V

200
TJ

100

"-

;a
I
Z

:;(

~

ffi

FIGURE 2 - CAPACITANCES

0

'E.. 50

"

"'~
~
U
;t

70

~

u'

50

~

i:l
,f

30
5.0

7.0

10

20

30

50

70

100

200

300

~ 2~D~

70

500

IC, COLLECTOR CURRENT (mAl

Cib

30
20

r-- r-I-

.....

10

7.0
5.0

3.0
2.0
0.1

0.2

0.5

1.0

2.0

5.0

10

VR, REVERSE VOLTAGE (VOLTS)

1-327

20

~:
I1
50

100

2N6551,2N6552,2N6553

TYPICAL CHARACTERISTICS (continued)

FIGURE 4 - "ON" VOLTAGE

FIGURE 3 - DC CURRENT GAIN

400

z 200

:;;:

'"o

60

~

=

~
~

~

O. 2

VCE(sat)@lIC/IS= 10
20

1.0

5.0

2.0

10
20
50
100
IC. COLLECTOR CURRENT (rnA)

500

200

o

1.0

1.0 k

~ 1.0

1.0

T~ 125~J

o

~
£

O.8

~

!9~JlJ.l~CE("tl

~

-0.5

'"
~

-1.0

o

:>

\

~

~iI

::: o. 2
8

iU.=ir(

>'"

IIITH- ~

w

0
0.06 0.1 0.2

0.5

rrUIlI

~

0-_

Y[
~

50 100 200

-2.5
1.0

500

1400
~

~ 300

A. ~

:>

'="

....-

L-- ~

-

I~ ~ I.- l- I~ ~ l- I -

.0-

~V

:;!

V

I I III

10
20
50
100 200
IC. COLLECTOR CURRENT (rnA)

500

1.0 k

7

I--VCP50V

1

104

~

1031==TJ= 1500C

=
'-'

:::0

=
102
o
t;

j

:ru
fl""
°v

E

~REVERSE

FORWARD:::::

100

~

F250 C
10-1

IC = 200.A
4.0
6.0
S.O
10
12
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-'--1000C

10 1

'"'-'

.;
- 10

2.0

5.0

!i;

200

oIL

I I IITI
2.0

2

105

I-' l- t-'

zmI

IS •
.AIS\.p
I-TJ= 25 0C

+25 c

FIGURE 8 - COLLECTOR CUTOFF REGION

FIGURE 7 - COLLECTOR CHARACTERISTICS
500

i r1 rf

9Va for VaE
-2.0

~

TIn

1.0 2.0
5.0 10 20
IS. 8ASE CURRENT (mA)

I I II
-550~ to ~2~0~

~ -1.5

~~

~I.

.

!<

1.0A

I I III

-550C to +250 C

u:

0.4

500 1.0 k

+25~C tOI+112ll

~

•

=

10
20
50
100 200
IC. COLLECTOR CU RRENT (rnA)

TT _:~1~Pli"fO; Ic/IS';; hFE/2

0.5

0-

=
~

8

5.0

;:;

> O. 6

~

2.0

FIGURE 6 - TEMPERATURE COEFFICIENTS

FIGURE 5 - COLLECTOR SATURATION REGION

~o

1.....1....

4

01--"

~

::::;::;-

ttL

6_

~

J~~ = i.o v

V

rlll~J= 25/'C I
I.JIII
I 11
IVSE(satl@lIC/IS =

O.S

~150J

i--'

~ 100

80

~~

1-"1--'"

'"E
~

1.0

~;~ 1250C

-0.4
14

1-328

-0.2

+0.2
+0.4
VSE. SASE·EMITTER VOLTAGE (VOLTS)

+0.6

2N6551,2N6552,2N6553

TYPICAL CHARACTERISTICS (continued)

III

FIGURE 9 - THERMAL RESPONSE
10
01
OS

o ~ OS

:is

-

~~ 03 I-

~~

02

ffi~

01

-

~
0.1

-

II"'"

::oiii~

-

I- IQ.Os

ZOJCItI

~

'ItI ROJC

ROJC '" 12 soe/W Max

;;;'"

~~ 007

SlI'IglePulse

e:.~ 0.05

~~ 003
0.02

'"

Smgle Pulse

-

PEJUl

O. 2
001

I

0.01
001

Duty Cycle. 0'" Itltz

002

005

0.1

10

05

02

20

50

10
t,

20
TIME (msl

,... ,\1 OOJ.[s

2.0 k

,1.0ms

1.0 k

~

100
500

~

300

B

ZOO

ill

'"

~

8
!2

100
0

TC ~ 25°C

....
TA ~ 25°C

I

l'\c

.

II

del'
\

de .... ,

2NBSSI ;

TJ-ISOoC
- BDNDING WIRE LIMIT
THERMAL LIMIT. SINGLE PULSE
- - - SECOND BREAKDOWN LIMIT
(Applies Below Rated VCEOI

of:-

0
20
1.0

2.0

3.0

5.0 1.0

10

20

2N6552
2N6553
3D
50

10

50

100

200

500

10k

100

VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)

FIGURE 11 - POWER DERATING

1. 0

~

" r-...

'"g
~

'"z

"'"
---

r-

o.8

~

~
ffi o. 4

'"
!ii:

r-

r-...

""I",

c

~

Second Breakdown Derating

Thermal Deratmg " -

o. 6

o.2
0

20

4D

60

2.0k

PULSE TRAIN SHOWN
READ TIME AT Ii
TJlpkl . TC ~ P(pkl ROJc(tl
5.0 k 10 k

20 k

50 k 100 k

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
T J(pk) may be calculated from the data in Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 10 - ACTIVE·REGION SAFE-OPERATING AREA

I-

o CURVES APPLY FOR POWER

-t~J

1'"

- ZOJA(I) " rlt) ROJA
ROJA ,.. 62.5 0 CIW Max

80

100

TC, CASE TEMPERATURE (OC)

1-329

IZO

"

r-...

140

160

2N6554
2N6555
2N6556

®

MOTOROLA

DUOWATT

PNP SILICON ANNULAR
AMPLIFIER TRANSISTORS

PNP SILICON
AMPLIFIER TRANSISTORS

... designed for general-purpose, medium-voltage, medium power
amplifier and driver applications; series, shunt and switching regulators, and low and high frequency inverters and converters.

•

High Collector-Emitter Breakdown Voltage BVCEO = 100 Vdc (Min) @ IC = 1.0 mAdc - 2N6556

•
•

Duowatt Package - 2 Watts Free Air Dissipation @ T A = 25 0 C
Complements to NPN 2N6551/2/3

MAXIMUM RATINGS
Symbol

Rating
·Collector-Emitter Voltage
·Collector-Base Voltage
"Emitter-Base Voltage

·Collector Current
II

Continuous
Peak

Base Current

IITotal Power Dissipation @ T A

::I

2SoC

Derate above 25°C
Total Power Dissipation @TC :::: 25°C
Derate above 2SoC

·Operating and Storage Junction
Temperature Range

2N65541 2N65551 2N6556

J

I

100
80
VCBO
I 80 I 100
5.0
VEBO
1.0
IC
2.0100
IB
2.0
Po
16
10
Po
80
TJ,Tstg - 5 5 t o + 1 5 0 VCEO

60
60

260-

·Solder Temperature, 1/16" from Case
for 10 Seconds

Unit
Vdc
Vdc
Vdc
Adc

G
mAde
Watts
mW/oC

Watts
mW/oC

°c
°c

THERMAL CHARACTERISTICS
Svmbol

Max

Unit

Thermal Resistance, Junction to Ambient

ROJA

Thermal Resistance. Junction to Case

ROJC

62.5
12.5

°CIW
°CIW

Characteristic

·Indicates JEDEC Registered Data.

STYLE 1

PIN 1. EMmER
2 BASE
3 COLLECTOR
4 COLLECTOR

MILLIMETERS
DIM MIN MAX
A 2184 22.35
991 1041
B
4.19
444
C
0.61
071
0
394
F
36B
2.41
G
267
H
1.70
1.96
048
0.66
J
K 1270
178
203
L
N
9.91 10.16
Q
356
3.81
241
2.67
R
T 1321 13.97

INCHES
MIN MAX
0.860 0.880
0390 0410
0.165 0.175
0.024 0028
0.145 0155
0.095 0.105
0.067 0.077
0019 0.026
0.500
0070 ooao
0.390 0,400
0.140 0.150
0.095 0.105
0.520 0.550

CASE 306.04
TO-202AC

1-330

2N6554,2N6555,2N6556

·ELECTRICAL CHARACTERISTICS

I

(T A: 25°C unless otherwise noted.)'

I

Charactwistic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC : 1.0 mAde, Ie : 0)

Vde

BVCEO
2N6554
2N6555
2N6556

Collector-Base Breakdown Voltage

60
80
100

-

60
80
100

-

Vde

BVCBO

(lC = l00/lAde, IE : 0)

2N6554
2N6555
2N6556

Emitter-Base Breakdown Voltage

BVEBO

5.0

Vde

(IE: 100 /lAde, IC = 0)
Collector Cutoff Current
(VCB: 40 Vde, IE : 0)
(VCS = 60 Vde, IE = 0)
(VCS: 80 Vde,IE: 0)

ICBO
2N6554
2N6555
2N6556

nAdc

-

Emitter Cutoff Current
(VES = 4.0 Vde, IC: 0)

100
100
100
100

lEBO

nAdc

ON CHARACTERISTICS 11)

DC Current Gain
(lC =
(lC:
(lC.:
IIC =

-

hFE
60
80
60
25

10 mAde, VCE = 1.0 Vde)
50 mAde, VCE = 1.0 Vde)
250 mAde, V CE : 1.0 Vde)
500 mAde, VCE : 1.0 Vde)

Collector-Emitter Saturation Voltage

300

-

Vde

VCE(sat)

-

(lC: 250 mAde,IB: 10 mAde)
(lC: 1.0 Ade, IB : 100 mAde)

Base-Emitter On Voltage

VBE(on)

0.5
1.0
1.2

Vde

375

MHz

18

pF

(lC = 250 mAde, VCE = 5.0 Vde)
DYNAMIC CHARACTERISTICS

Current-Gain - BandWidth Product

IT

75

(lC: 100 mAde, VCE : 5.0 Vde, I : 20 MHz)

Collector-Base Capacitance

Ceb

(VCS: 20 Vde, IE : 0, f : 1.0 MHz)

* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width <: 300 /lS, Duty Cycle <: 2.0%.

Ii'I
~

TYPICAL CHARACTERISTICS

Ii
FIGURE 1 - ACTlVE·REGION SAFE'()PERATING AREA

5.0
2.0

"

60

~

1. 0

;

O.

_

O. 2

~

~

de

o. 1
5

Trl

C

J

"l'\..

.....

,,~

~ TJ :.150'CBONDING WIRE LIMIT

for duty cycles to 10% providedTJ(pk)';; 150°C. TJ(pk) may be

THERMAL LIMIT, SINGLE PULSE, TC· 25'C
- - - - SECOND BREAKDOWN LIMIT
2N6554(Applies Below Aated VCEO'jr
0.0 1
2N6555
2N6556
0.005
1.0
2.0 3.0
5.0 7.0 10
20
30
50

.9 0.02

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate le-VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk)::: 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid

~~ = 250C~'O ms

5

0.0

'"

lOOps

TT

calculated from the data In Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

I

70

100

VeE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

1-331

~

I
I

2N6554,2N6555,2N6556

II]
TYPICAL CHARACTERISTICS (continued)
FIGURE 2 - DC CURRENT GAIN
Joo

.

200

z

'"
....
~

100

u

c

10

~

50

a'"

FIGURE 3 - "ON" VOLTAGE
1.0

TJ·125 oC

-

--,,\

I--"'

~

2.0

10

50

20

100

200

~ 0.4

>
>'

0.2

500 1000

5.0

2.0

1."

1. 0

~

!

0,8

IC = 10 mA

SOmA

250 mA 500 mA

i

LOA

~ 0.4

~

~

I II

0

02

0.05 0.1

0.2

0.·

1.0

2.0

5.0

10

20

100

200

500 10k

50 100

200

II
"Applies for le/18

w

-1.0 0

'"~
~

-1.5 0

~

-1.7 5

500

-55°C to 250C

0;;;;

hFE/ 2

-0.7 5
-1.25

11mlto~~

0VB for VBE

~ -2.0 0

r--

o

50

25°C to 125 0 C

"Ove for VeE(sat)

-0.25

t:; -0.5 0

ffi
t:

20

FIGURE 5 - TEMPERATURE COEFFICIENT
_ +0.25

TJ = 250 C

0.6

10

~

IC. COLLECTOR CURRENT ImA)

FIGURE 4 - COLLECTOR SATURATION REGION

>

Ir

VCE (sat)@ Ic/lB = 10

IC. COLLECTOR CURRENT ImAI

~
2.
~
)~

-

~
....

r5.0

.........
1=---

VBElon)@VCE= 5.0

w

VCE=I.oV
3D
1.0

1111

VBE lsat)@ IC/IB = 10

~ 0.6

-

-55 0 C

cll

II Illl

0.8

............
25lc

TJ=25 0

-2.25
1.0

I II
I
2.0

lB. BASE CURRENT ImAI

-550 C to 25 bC
5.0

10

JUl100 200
:1
50

10

500 1.0 k

IC. COLLECTOR CURRENT ImAI

FIGURE 6 - THERMAL RESPONSE
1.0
O.
: 0 = 0.5

;;:0

~~ 0.3

~~ 0.2

ffi~
;nw

-

-d::;

I
:i~ 0.0 I~
~_~ 0.0 5~

-

0.1

0.05

~

-

Jill"

::Oiilii

Single Pulse

illJ1 -o
-t\;-J

SmglePulse

0.01

0.0 1
0.01

1""

I
0.01

ZOJAltl = rit) ROJA
ReJA = 62.5 0 CIW Max

Plpkl

~EO.03 ....... !ill
0.02

Duty Cvcle, D == tl/t2

0.05

0.1

0.2

0.5

1.0

1.0

z"JCltl - rltl ROJC
R8JC'" 12.5DCIW Max

5.0

10

10
t. TIME Im.1

1-332

50

100

200

500

1.0k

1.0k

CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT tt
TJlpkl·-TC = Plpkl ROJCltl
5.0k 10k

20k

SDk lOOk

®

2N6557
216558
2N6559

MOTOROLA

NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS

DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS

· .. designed for high·voltage TV video and chroma output circuits,
high·voltage linear amplifiers, and high·voltage transistor regulators.

•

High Collector· Emitter Breakdown Voltage BVCEO = 350 Vdc (Min) @ IC = 1.0 mAdc - 2N6559

•

Low Collector·Emitter Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 30 mAdc

•

Low Collector·Base Capacitance Ccb = 3.0 pF (Max) @VCB = 20 Vdc

•

Duowatt Package 2 Watts Free Air Dissipation @ T A = 25°C

Q

MAXIMUM RATINGS
Rating

VCEO
VCBO

2N65571 2N655SI 2N6559
250 I 300 I 350
250 I 300 I 350

VEBO
IC

~O.5-

Symbol

*Coll'ector-Emitter Voltage

·Collector-Base Voltage

* Emitter-Base Voltage
·Collector Current - Continuous
Peak

*Base Current

IB

*Total Power Dissipation @ T A

=2SoC

Po

Derate above 2SoC
Total Power Dissipation@Tc=2SoC

Po

Derate above 2SoC
·Operating and Storage Junction
Temperature Range

·Solder Temperature, 1/16" from Case
for 1a Saeonds

TJ,Tstg

.

.
·.
·.
·
.

6.0-

0.72502.0161080.....-- -55 to +150-----.
260-

Unit

Vde
Ade

Characteristic
Thermal Aesistance, Junction to Case

o

Lgnc
G

mAde

r

°c
DIM

Max

Unit

ReJA
ReJC

62.5
12.5

°C/W
°C/W

*Indicates JEDEC Registered Data.

-=t.J

STYLE 1
PIN 1. EMITTER
2. BASE
3. COLLECTOR
4 COLLECTOR

°c

Symbol

-.l

R

Watts
mWf'C
Watts
mW/oC

THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Ambient

'GJ

Vde
Vde

A
B

C
D
F

G
H
J

K

L
N
Q

R
T

MILLIMETERS
MIN MAX
21.84 22.35
9.91 10.41
4.19
4.44
0.61
0.71
3.68
3.94
2.41
2.67
1.70
1.96
0.48
0.66
12.70
1.78
2.03
9.91 10.16
3.58
3.81
2.41
2.67
13.21 13.97

-

INCHES
MIN MAX
0.860 0.880
0.390 0.410
0.165 0.115
0.024 0.028
0.145 0.155
0.095 0.105
0.0 7 0.077
0.019 0.026
0.500
0.070 0.080
0.390 0.400
0.140 0.150
0.095 .105
0.520 0.550

CASE 306.(J4

TO·202AC

1-333

2N6557,2N6558,2N6559

..
I

'ELECTRICAL CHARACTERISTICS (TA ' 250 C unless otherwise noted'!

I

I

Charactoristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vde

eVCEO

2N6557
2N6558
2N6559

(lc = 1.0mAde,le' 0)

250
300
350

Collector-Base Breakdown Voltage

-

Vde

eVCBO

2N6557
2N6558
2N6559

(lC' 100 JLAde. IE ' 0)

250
300
350

Emitter-Base Breakdown Voltage

eVEBO

6.0

-

-

Vde

(IE' 100 /LAde, IC' 0)

Collector Cutoff Current

Iceo
2N6557
2N6558
2N6559

(Vce' 150 Vde, IE ' 0)
(Vce ' 200 Vde, IE' 0)
(Vce ' 250 Vde, IE = 0)

Emitter Cutoff Current

IEeO

-

/LAde

-

0.2
0.2
0.2

-

0.1

25
40

180

/LAde

(VeE = 5.0 Vde. IC ' 0)
ON CHARACTERISTICS(1)

DC Current Gain
(lC' 1.0 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)

-

hFE

Collector-Emitter Saturation Voltage

Vde

VCE(satl

-

(lC = 30 mAde, IB = 3.0 mAdel
(lC = 50 mAde, Ie ~ 5.0 mAde)

Base-Emitter On Voltage

-

0.6
1.5

VBElon)

-

0.85

Vde

fT

45

200

MHz

3.0

pF

(lC' 30 mAde, VCE ' 10 Vdel
DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product
(lC ' 10 mAde, VCE ' 20 Vde, f, 20 MHzl

Collector-Base Capacitance
(VCB

= 20 Vde,

IE

= 0, f ,

Ceb
1.0 MHz)

.. Indicates JEOEC Registered Data.
(1) Pulse Test: Pulse Width .. 300 JLS, Duty Cycle .. 2.0%.

TYPICAL CHARACTERISTICS
FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA
1.0

0.50

~

0.20

::i
i3

0.05

'"c

0.02

.,.

~oo"S

de
de
"""-TC - 25'C
TA=25'C

E 0.1 0

There are two limitations on the power handling ability of

1.0ms

5.0ms

g '="==

.....
0.0 c----~ TJ = IOu",
1
BONUING WIRELIMIT
80.005 - - - THERMAL LIMIT. SINGLE PULSE. TC - 25'C
- - - SECOND BREAKDOWN LIMIT
~
2N6557--1"'
0.002
0.00 I

1.0

~~:~~;-'-t-

2.0

5.0

10

20

50

100

200

8

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater dissipation than the curves Indicate,
The data of Figure 1 is based on TJ(pkl =·1500 C;Tcisvariable
depending on conditions, Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(pk)';;; 1500 C. TJ(pk) may be
calculated from the data in Figure 6. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second brea kdown.

500 l.Ok

VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI

1-334

2N6557,2N6558,2N6559

TYPICAL CHARACTERISTICS

(contim~ed)

FIGURE 2 - DC CURRENT GAIN
3D0

FIGURE 3 - "ON" VOL TAGES
1.4

TJ; 12ioci

2110

TJ 0 250C

r-....

~ '25 0c

100

~

1.0

0
0

-

-5S UC

... ~

0
0

::::

~

I~.

~t',.

O. 6
O. 4

05

1.0

2.0 30 5.0

LIlL

1111
.1.VCE(sat)

o. 2
o

3. 0
0.3

10

20 30

50

100

I

VSE(on!@VCE 010 V

">>'

VCE 2.oV

70
5. 0

mli,,!@ICIIS - 10

~

",'

t:::'1

O. B

~
w
to

I"~

L ~CE oolOV

0

~_

0.30.5

200 300

10

203.050

10

20 30

u

2.0

~

1.0

U
1. 2

*

~-1.0
=>

I II Nli N.I

I 1t10.05

o

0.01 0.02

0.1

!;(

N 'tl

lJ

LllJ[

200300

.Il

-'OV~lorV(CE(~11

25°C to 125°C

8

o. B
o.4

100

f-- *Appl/es for le!la:s;;: hFE/2

">

E.

6

SOmA

~;o

50

3.0

TJ = 25°C

30
mA

J

FIGURE 5 - TEMPERATURE COEFFICIENTS

FIGURE 4 - COLLECTOR SATURATION REGION
2.0

lOrnA

I

IC, COLLECTOR CURRENT (mAl

IC, COLLECTOR CURRENT (mAl

Ie-lOrnA 3.0mA

L

IC/lS·~

100 rnA

~ -20

ili-J I

~ -3.0

-550f to 25;C

J

-

25°C to 125°C

Ovis lor SE

-55°C to 25°C

"

II

i

H-.'ffi" IHf
10 20

50 100

0.5 1.0 20
5.0
0.2
IB, SASE CU RR~NT (mA!

-4.0
10

2.0

3.0

5.0 7.0

10

20

30

50

70 100

IC, COLLECTOR CURRENT (mAl

FIGURE 6 - THERMAL RESPONSE
1.0

0.7
0.5

0-0.5

<0
ii~

0.3

~~

-~

0.2

5~
o;w

0.1

O. 1 -

ii.05

~~ 0,07

-

....

SmglePulse

:=_~ 0.05

....

-

:::i!iiliii

ZOJC(I!- r(l! ROJC
ROJC::: 12 5DeIW Max

pEfUl

Smgle Pulse

~~ 0.03 "'" 0.Q2
0.01
0.02

-t~J

,1"

I

0.01
0.01

0.02

Duty Cycle, 0 "'" l1ft2
0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20
I, TIME (m.!

1-335

50

100

200

500

1.0 k

2.0 k

-

-

ZOJA(I! • r(11 ROJA

ROJA '" 62 SDelW Max

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
TJ(pk! -TC P(pkl ROJC(I!
0

5.0k 10k

20k

SDk lOOk

2M&5&9

®

MOTOROLA

IIJ
12 AMPERE

POWER TRANSISTOR
NPN SILICON

NPN SILICON POWER TRANSISTOR
The 2N6569 is a general-purpose, EPIBASE power t~ansistor
designed for low voltage amplifier and power switching applications.

40 VOLTS
100 WATTS

Low Cost
••. Safe
Operating Area -

•
•
•

Full Power Rating to 40 V
EPIBASE Performance in Gain and Speed
Metal Can Reliability - TO-3 Package
All-Purpose Replacement for Industry Standard 2N3055

-MAXIMUM RATINGS
Rating

Collector-Emitter Voltage
Collector-Ba.. Voltage
Emitter-Ba •• Voltage
Collector Current

Continuous

Symbol
VCEOlsus)
VCBO
VEBO
IC

-Peak
Base Current

Continuous

-Peak
Emitter Current

Continuous

- Peak
Total Power Dissipation !iii T C = 25°C
Derate above 25°C
Operating and Storage Junction

'B
'E
Po
TJ,T.tg

Volue
40
45
5.0
12
24
5.0
10

Unit
Vdc
Vdc
Vdc
Adc

17
34
100
0.572
-65 to +200

Adc

Adc

L~=r
le

f-,-

Q0;Vll

! "1(f

Characteristic

°c
DIM

Maximum Lead Temperature for Soldering

Symbol

Max

R8JC
TL

1.75
265

Purpo...: 1/16" from Co.. fo lOs.

Unit
uCIW
C

A
B

C
0
E
F

G
H
J
K
Q

R

1-336

I

J-

~

t-fr'1

1
lo

1

i

NOTE:
1. OIM "0" IS OIA.
STYLE 1:
PIN 1. BASE
2. EMITIER
CASE: COLLECTOR

Watt.
Wt"C

Temperature Range

Thermal Resistance, Junction to Case

I

",-1/

t

THERMAL CHARACTERISTICS

K

SEATING
0
PLANE
t---F-

MILLIMETERS
MIN MAX

INCHES
MIN
MAX

39.37
U50
21.08
0.830
6.35
7.62 0.250 0.300
1.09 0.039 0.043
0.99
0.135
3.43
29.90 30.40 1.177 1.197
10.67
11.18 0.420 0.440
5.3
5.59 0.210 0.220
16.64 17.15 0.655 0.675
11.18 12.19 0.440 0.480
4.09 0.151 0.161
3.84
26.67
1.050
Collector connected to case.
CASE 11·01
ITO-3)

-

-

2N6569

-ELECTRICAL CHARACTERISTICS (TC = 25"C unle.. otherwise noted.)

I

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage
(lC = 200 mAde, 18 = 0)

VCEO(sus)

Collector Cutoff Current

-

1.0
10

Vde

-

5.0

15
5.0

200
100

-

1.5
4.0

VBE(sat)

.-

2.0

Vdc

fT

1.6

15

MHz

Cob

75

750

pF

IlS

'EBO

(VEB = 5.0 Vde, IC = 0)

-

mAde

'CEV

(VCEV = 45 Vdc, VBE(off) = 1.5 Vde)
(VCEV = 45 Vdc, VBE(off) = 1.5 Vdc, TC = lOOOC)
Emitter Cutoff Current

40

mAde

SECONO BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1.0. (non-repetitive))
ON CHARACTERISTICS
DC Current Gain

-

hFE

(lC = 4.0 Ade, 'VCE = 3.0 Vdc)
(lC = 12 Ade, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage

Vdc

VCE(sat)

(lC = 4.0 Adc, 'B = 0.4 Adc)
(lC= 12Adc,IB= 2.4Adc)

Base-Emitter Saturation Voltage
(lC = 4.0 Adc, 'B = 0.4 Adc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

(lC = 1.0 Adc, VCE = 4.0 Vdc, f teot = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, 'E = 0, f test = 1.0 MHz)
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Delav Time

Rise Time
Storage Time
Fall Time

(VCC = 30 Vde, IC = 2.0 Ade,lBl = 0.2 Ade,
tp = 25 IlS, Duty Cycle" 1.0%)
(VCC = 30 Vde, IC = 2.0 Ade, 'Bl = 'B2
tp = 251l', Duty Cycle" 1.0%)

0.2 Ade,

tcr

0.4

'r

1.5

IlS

"
tf

5.0

1'0

1.5

IlS

·'ndicates JEDEC Registered Data.

FIGURE 1 - SWITCHING TIMES TEST CIRCUIT

Vee

t-T25Ils~+30:e

+1~ ~O__

RS

Scope

-9.~-;D
01

tr.tf '" 10 ns
Duty Cycle"" 1.0%

-4.0 V

-=

,

RS lind Fie Varied to Obtain Desired Current Levels

o 1 mus~ be fast recovery tv pe.

1-337

2N6569

FIGURE 2 - THERMAL RESPONSE

ffi

N

1.0

iii ~ ~

-

~ O. I~D-o.5
~ O.5

..."

~

O. 3-0~2

~ O. 2

I<:::;

_0.1

~
ffi o. 1 0 .05

III"""

'"~ 0.011-0.02
ffi 0.05
i:
I-

ffi

0;

0.03

-

I-

R9Jc{d = rId RSJC
RSJC • 1.75"CIW MIX
D CURVES APPLY FDR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ{pk) - TC' P{pk) R9JCh)

f-Dr

P'>. P,0.01
~sl,,'e P,.'"

0.02 r--

DUTY CYCLE. 0 = 1111Z

z

~ 0.01

I-

0.01

0.02

0.1

0.05

0.2

1.0

0.5

2.0

5.0

20

10

50

" I 200I I I 500I I II 1000
100

I. TIME (m~

FIGURE 3 - SAFE OPERATING AREA
30

.

....

f-.
20

.~j. ....
1.0"" .....

0:
~
I-

~

10

G

1.0

"'"

5.0

.... .....

r-' ._.

Safe operating area curves indicate IC-VCE limits of the
transistor being observed for reliable opjlration; i.e .• the
transistor must not be subjected to greater dissipation than
the curves indicate. This transistor is thermally limited over
its entire operation area. Figure 4 may be used to derate
the curves shown or an effective ROJC(t) may be computed
from Figure 2 for pulsed operation.

5.0ms

-

2.0
1.5
4.0

-, ..... ...

.....

de

~
8 3.0 r-- _. _.
E

.... ,O.5ms
.....

-

I
5.0

-

.....

.......

.....

Currant limited
Thermally Limited

I I I I I

......

-,

I

7.0
10
20
30
50
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

70 80

FIGURE 4 - POWER DERATING
1.0

.........

""'- I'..

0.8

'"
~ o. 6
:E
'"z

"'-

~ 0.4

"-

...'"

.......

.....

"

-.......
0.2

o

........

.........
o

20

40

60
80
100
120
TC. TEMPERATURE (DC)

1-338

140

160

180

200

2N6569

FIGURE 6 - COLLECTOR SATURATION REGIDN

FIGURE 5 - DC CURRENT GAIN
IIlO11

~ 2.0

500

TJ~

~
...

VCE =4.DV

15IJOC

~

z

"a'i

fo...

.. 200 f--- r- 2SDC
....
:

..,
:::0

r- t'- ~

~~

-55DC

1.2

!

0.8

l!l

0.2

0.3
D.S 0.7 1.0
2.0 3.0
IC. COLLECTOR CURRENT (AMPERES)

S.O 7.0

10

10

"

2~DC

8.0 A

4.0 A

20

SO
100 200
SOO
Is. BASE CURRENT (mA)

1000

2000

SIlOII

103
TJ'2SDC

1.2

I--- vCE-30V-

I
L

g 1.0

0.2

100

~

i I

VBj 'VfE 4'j

I
I

'"

I.

l.-- /

w

- -

"....

102

.:.

VBE(sat)@lIC/IB= 10

~ 0.8

~ 0.6

TJ =

FIGURE 8 - COLLECTOR CUT'()FF REGION

FIGURE 7 - "ON" VOLTAGES

>
,; 0.4

II

0
S.O

1.4

.
.

III

j
:3 o.4
>

10
0.1

III

III

~

"

20

III
IC·1.0A

~

~

~

100

\.6

I II
I II

8
E

,/

VCE(sat)IIIC/lB' 10

ht

TJ -175°C 7

100 DC

101

F=

==

/

25DC -

-

IC=ICES

10-1
10-2

~ ::: Rev....

Forward

-I--"
10-3

0.1

0.2

0.3

O.S 0.7

1.0

2.0

3.0

5.0 7.0

10

-0.4

-0.3

-0.2

-0.1

0.1

0.2

0.3

VBE. BASE·EMITIER VOLTAGE (VOLTS)

IC. COLLECTOR CURRENT (AMPERES)

1-339

0.4

O.S

0.6

2N6576
2N6577
2N6578

®

MOTOROLA

15 AMPERE
POWER TRANSISTORS

NPN SILICON POWER DARLINGTON TRANSISTORS
General-purpose EpiBase power darlington transistors, suitable
for linear and switch ing applications_

NPNSILICON
DARLINGTON
60, 90, 120 VOLTS
120 WATTS

• Replacement for 2N3055 and Driver
• High Gain Darlington Performance
• Built-In Diode Protection for Reverse Polarity Protection
• Can Be Driven from Low- Level Logic
• Popular Voltage Range
• Operating Range - -65 to +200o C

*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage

Collector Current

Symbol
VCEO(sus)
Vca
VFR

Continuous
Peak

IC

Base Current - Continuous

la

- Peak
Emitter Current - Continuous
- Peak
Total Power Dissipation @ T C
Derate above 2SoC

2SoC

Operating and Storage Junction

.
..

Unit

.

.

IE
==

2N6576 \ 2N6577\ 2N6578
60
\ 90 ~ 120
60
\ 90 1 120
7.015
~
30
_0.25_0.5015.25_30.5_

Po
TJ,T stg

Vdc
Vdc
Vdc
Adc
Adc
Adc

.

1 2 0 - Watts
_ 0 . 6 8 5 _ W/oC
_ - 6 5 to + 2 0 0 _
°c

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering

Symbol

Max

Unit

ROJC

1.46
265

°CIW

TL

°c

Purposes: 1/16" from Case for 1Os.
*Indicates JEDEC Registered Data

DIM
A
I
C

0
E
F
G
H

DARLINGTON SCHEMATIC

j

K

n

Collector

R

INCHES

MILLIMETERS

MIN

--

6.35
0.97

-

29.90
10.87
5.21
16.84
11.11
3.84

-

MAX

MIN

39.37
22.23
11.4.1
1.09
3.43
30.40
11.11
5.72
17.15
12.19
4.119
26.87

-

-

0.250
0.038

-

1.177
0.420
0.Z05
0.655
0.440
0.151

-

CASE II-OJ
TOol

Emitter

1-340

MAX
1~

0.175
0.450
0.043
0.135
1197
0.440
0.225
0.875
0.480
.11
1.050

2N6576, 2N6577, 2N6578

-ELECTRICAL CHARACTERISTICS

I

(Te

= 25°C unless otherwise noted.)

ChI_isti.

I

Symbol

Min

MIX

Unit

OFF CHARACTERISTICS

Coliector·Emitter Sustaining Voltage( 1)
(Ie

= 200 mAde, IB = 0)

= Rated

ICED

-

1.0

leER

-

5.0

mAde

ICEV

-

5.0

mAde

IceD

-

0.5

mAde

90

mAde

Value)

Collector Cutoff Current
(VeER = Rated VeEO(sus) Value, RBE

= 10 kil, TC = 150°C)

Collector Cutoff Current
VCEX = Rated VCEO(sus) Value, VBE(olf)

= 1.5 Vde)

Collector Cutoff Current
(VCB

120

-

60

Collector Cutoff Current
(VeE

Vde

VeEO(sus)
2N6576
2N6577
2N6578

= Rated Value)

ON CHARACTERISTICS

DC Current Gain
(lC
(lC
(Ie
(lC

hFE

= 15 Ade, VCE = 4.0 Vde)
= 10 Ade, VCE = 3.0 Vdel
= 4.0 Ade, VCE = 3.0 Vde)
= 0.4 Ade, VCE = 3.0 Vde)

100
500
2000
200

Collector-Emitter Saturation Voltage
(lc
(lC

= 15 Ade, 18 = O.lS'Adc)
= tOAde,le = 0.1 Ade)
= 15 Adc,
= 10 Ade,

Ie
18

Vde

-

4.0
2.8

-

4.S
3,5

-

VeE(satl

= 0.15 Adc)
= 0.1 Adc)

COllector-Emitter Diode Voltage Drop
(lEC = 15 Adc)

VF

-

-

VCE(satl

Base-Emitter Saturation Voltage
(lC
(lC

5,000
20,000

Vde

-

4.5

Vde

DYNAMIC CHARACTERISTICS

Magnitude of Commo,n-Emitter Small-Signal Short-Circuit Current Transfer Ratio
(IC

= 3.0 Ade, VCE = 3.0 Vde, f = 1.0 MHz)

SWITCHING CHARACTERISTICS
RESISTIVE LOAD (Figure 2)

Delay Time

Rise Time
Storage Time
Fall Time

(VCC = 30 Vde, IC = 10 Ade, 181
tp = 3001", Duty Cycle .. 2.0%)

= 0.1

Adc,

(VCC - 30 Vdc,IC = 10 Ade,lel - IB2 - 0.1 Ade,
tp = 300 I'S, Duty Cycle .. 2.0%)

-

0.15

I'S

tr

1.0

I'S

t.

-

2.0

I'S

7.0

1"

td

tf

·lndicatesJEDEC Registered Data
(1) Pul,e test: Pulse Width .. 300 I'S, Duty Cycle .. 2.0%.

FIGURE 1 - RATED FORWARD BIASED
SAFE·OPERATING AREA

40
20
ii:

~

~

.- t-,

....

10
5.

0

,

"

a 2.0
:5

TJ:ZOOoC
1.0 _. - Bondmg Wire Limit
~ - Thermal limit, SmgJe Pulse, TC = 25°C
5 - - Second Breakdown Limit

~

O.

~

O. 2
O. 1

0.0 5
2.0

I

100.'=0=

de

2N6576
2N6577
ZN6578

,"

-

1.0m~-t-

J.om.=:
1\

100
5.0
20
40
60
10
VCE, COLLECTOR-EMITTER VOLTAGE IVOLTSI

150

1-341

There are two limitations on the power handling ability of
a transistor: average junction temperflture and second breakdown.
Safe operating area curves indicate IC-VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 1 is based on TC = 250 C; TJ(pk) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10%.
TJ(pk) may be calculated from the data in Figure 6. At high
case temperatures thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.

2N6576,2N6577,2N6578

FIGURE 2 - DC CURRENT GAIN

z

5k

;;:

.v
~ 2k r- i25 0 C "r ......

./

'"

~

V

lk

<.>

1\

I\.

VCE = 3 Vdc

'\

1\

SOD ~ 30°C

I

200

\
2.0
0.5
1.0
5.0
IC. COLLECTOR CURRENT lAMPS)

0.2

10

\H'
\H

mtt

'\
\

\

./

III
III

\

+IS0oC

....
"'

'"
B

1\

i""'-.

~

1

10 k

FIGURE 3 - COLLECTOR-SATURATION REGION

15

SA

1

1A

5

ill

,II

0.0001

0.001 0.002
0.005 0.01
lB. BASE CURRENT lAMPS)

0.0003

0.02

0.05

0.1

FIGURE 5 - BASE-EMITTER VOLTAGE

FIGURE 4 - COLLECTOR SATURATION VOL TAGE

11 Jl
-r-

.1.

1 1

ICIIB = 100

- - VBElsat) @ICIIB = 100
I-- r- - - - VBElon)@VCE=3V.2SoC

++-+++-++-+-+++-1-+1+-1

~

{J

w

,

~

IJ

"'

~>

-30°C

/

2

>- 1.5

-

l
la"

,UoJc

~

+250C

~

/ -lOoC

--- V

-r -

-::~

0.5
0.2

0.2

10 15

0.5
IC. COLLECTOR CURRENT lAMPS)

10

0.5

15

IC. COLLECTOR CURRENT lAMPS)

FIGURE 6 - THERMAL RESPONSE
O. 1

~C

o. 7 =
o.5

- --= pfJUl

0-0.5

~~ o.3 - _1 0.2
~~

.... '"

....
'"
zz
~

~

-0.1

ii

O. It::===:=: ;::::::0.05
~z(].o 7
~ 0.0Sf-0.02

:=
-:u;

-':-~O.03

0.0

......

2~

0.0 1
0.1

" SING LE PULSE

DUTY CYCLE. 0 = tl/t2

J
I

0.01
0.3

IIII
O.S

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpk) - TC = Plpk) 6JClt)

t:J

~

0.2

6Jclt) = ,It) 6JC
6JC = I.4B

~~
i"'"

o.2

0.7

1.0

2.0

3.0

5.0

7.0

10

t.TIME(ms)

1-342

I I

I

20

30

1

1

50

70

100

200

300

SOD

700 1000

®

2N6591
2N6592
2M6593

MOTOROLA

NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS

DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS

. . . designed for horizontal drive applications, high·voltage linear
amplifiers, and high·voltage transistor regulators.

•

High Collector· Emitter Breakdown Voltage BVCEO = 250 Vdc (Min) @ IC = 1.0 mAdc - 2N6593

•

Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Maxi @ IC = 200 mAdc

•

Duowatt Package 2 Watts Free Air Dissipation @TA = 25 0 C

MAXIMUM RATINGS
Rating

Symbol

"Collector-Emitter Voltage

Vceo

"Collector-Base Voltage

Vceo

·Emltter-Base Voltage

Veeo

"Collector Current - Continuous

2N6591I 2N65921 2N6593
150 I 200 I 250
150 I 200 I 250
5.0-0.51.01002.0---....
161080_ _ -55.to + 1 5 0 -

Ie

Peak (11

.. Base Current

Ie

"Total Power DiSSipation

@

T A - 25°C

Derate above 25°C
Total Power DisslpatlOn@Tc-25OC
Derate above 25°C
·Operatlng and Storage Junction
Temperature Range

Po
Po
T J.T st9

Vdc

.

Vdc

·.
·.
·

Adc

.

·Solder Temperature, 1/16" from Case
for 10 Seconds

Unit

260-

Vdc

mAde

Watts
mW/oC

Watts
mW/oC
°c
uc

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

ROJA

I
I

ROJC

I

Symbol

Characteristic
Thermal Resistance, Junction to Ambient

I

Max

62.5
12.5

I
I

°C/W

I

°C/W

·Indicates JEDEC Registered Data.
11) Pull. Test: Pulse Widt"''' 1.0 ml, Duty Cycle" 50%.

Unit

STYLE l'
PIN 1. EMITTER
2. BASE
3. COllECTOR
4, COllECTOR

MILLIMETERS
DIM MIN MAX
A 21.84 22.35
B
9.91 10.41
C
4.39
4.65
o 0.58 0.74
F
3.56 4.06
G
2.41
2.67
H
1.70 1.96
J
0.48 0.66
K
12.19 12.95
L
1.65 2.03
N
9.91 10.16
Q
3.56
3.81
R
1.07
1. 5
T
7.87 9.14

INCHES
MIN MAX
0.860 0880
0.390 0.410
0.173 0.lB3
0.023 0.029
0.140 0.160
0.095 0.105
0.007 0.077
0.019 0.026
0.480 0.510
0.065 0.080
0.390 D.400
0.140 0.150
0.042 0.069
0.310 0.360

CASE 306-04
TO·202AC

1-343

,!

2N6591,2N6592,2N6593

-ELECTRICAL CHARACTERISTICS

ITA' 25°C unless otherwise noted.l

SVrribol

ChlrllCta'iltic

Min

MIX

Unit

OFF CHARACTERISTICS
Collector~Emitter

Breakdown Voltage
IIC • 1.0 mAde, IB = 01

-

Vde

BVCBO

= 100~Ade,IE =0)

2N6591
2N6592
2N6693

Vde

5.0

BVEBO

Collector Cutoff Current
IVCB = 100 Vde, IE =0)
IVCB = 150 Vde, IE = 0)
IV,.,R = 200 Vde, IE =0)

-

150
200
250

Emitter-Base Breakdown Voltage
liE = 100 ~Ade, IC = 0)

Emitter Cutoff Current
(VEB = 5.0 Vde, IC

-

150
200
250

Collector-Base Breakdown Voltage

IIc

Vde

BVCEO
2NG591
2N6692
2N6693

~Ade

ICBO
2N6691
2N6592
2N6593
lEBO

=0)

-

0.2
0.2
0.2
0.1

/JAde

ON CHARACTERISTICS(I)

DC Current Gain

-

hFE

IIc = 10 mAde, VCE = 10 Vde)

2N6591
2N6592
2N6593

40
30
30

250
250
250

IIc = 100 mAde, VCE = 10 Vde)

2N6591
2N6592
2N6593

40
40
30

200
200
200

VCE(s.t)

-

0.8

Vde

VBElon)

-

1.0

Vde

fT

35

300

MHz

Ceb

-

12

pF

Collector-Emitter Saturation Voltage

IIc = 200 mAde, IB = 20 mAde)
Base-Emitter On Voltage

IIc = ~OO mAde, VCE = 10 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 50 mAde, VCE = 20 Vde, f

= 20 MHz)

Collector-Base Capacitance
IVCB = 10 Vde, IE

= 0, f = 1.0 MHz)

* Indicates JEDEC Registered Data.
11) Pulse Test: Pulse Width.; 300

~s,

Duty Cycle ';2.0%.

TYPICAL CHARACTERISTICS
FIGURE 1 - CURRENT·GAIN - BANDWIDTH PRODUCT
"N

300

I

...~~'" 200
::;'"

~ 100

i

z

i::

70

.t:

30

a

70
50

VCP 20V
TJ' 2S DC

CI
CI

g:

FIGURE 2 - CAPACITANCE
100

-

.....--

30

~ 20

t'-- r-....

-

... I~ 10
f 7,0

C.b

TJ' 2S DC

r-

w

0-.,

~ 5.0

\

&0

Ccb

..; 3.0
2,0

10

60
IC, COLLECTOR CURRENT (mAl
20

30

70

100

1.0
0.3

-

I
0.6 OJ 1.0

2,0 3.0 5,07,0 10

20 30

VR, REVERSE VOLTAGE IVOLTS)

1-344

f-

50 70 100

200300

2N6591,2N6592,2N6593

TYPICAL CHARACTERISTICS (Continued'

FIGURE 3 - DC CURRENT GAIN

FIGURE 4 - "ON" VOLTAGE

500

1.0

--

z

~
~

..

g

30

1']

II III

O. &

-

25'C

..:"'"

100
70
50

-

TJ = 1500C

200

....

~

-

~

VSEI,_! @VCE

w

~ o.4
o

t\...""'~" ,
,\::,

I 1111111

10
7.0
5.0
0.5

I

>

>'

VV

o.2

2.0

5.0
10
20
50
IC. COLLECTOR CURRENT ImA)

100

200

0.5

500

FIGURE 5 - COLLECTOR SATURATION REGION
1.0

TJ -15'C

w

.5 0.&

OB

~

.

IC - 25 rnA 50 mA

0

> 06

>>-

.~

04

~
8

0.1

>

~

200 mA

\
\

0

~

100 mA

1\

w

50 70100

O

./'

a

h

~V

~ ......

~~

~

.1

I

\.0"'''

. . . . ~J-';r~,.

--

r-r

1 111

0.5

1.0

2.0

5.0

10

20

50

100

200

IC. COLLECTOR CURRENT (mAl

FIGURE 8 - COLLECTOR CUTOFF REGION

- -~

r0-

10 2

I-- VCE = 150 V

I r-- TJ = 150'C

L

600 "A

I

r-- -

O~
V

20~"A

2~

I
30

l---:"

-55°& to +25°&

I

20

-H-t:r

ova for VeE

f-2.4
0.2

400 "A

10

J
V

+250 C to +125°&

a//.. ;,..--

0

/
V

+25 0 Cto +125 OC

I III

FIGURE 7 - COLLECTOR CHARACTERISTICS

_I~

1111

-550C 10 +25 0C

....

'B.

20a TA=25~C
PULSE WIDTH = 300"sOUTY CYCLE" 2.0%

11

~ -1.6

r20 30

500

I I 11

Jill

~

\

0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.07.0 10
SASE CURRENT ImA!

1111

~ -0.8

i

0
0.1

11

i

\
......

200

'OVC FOR VCElsa!)

u

\
\

10

.. Applies for leIla "RFEf2

u

e..
>

'":;'"

1.0

5.0
50
10
10
50
100
IC. r.OLLECTOR CURRENT ImAI

FIGURE 6 - TEMPERATURE COEFFICIENTS
1.6

0

~

~

VCElsaI!@IC/IS-1O

a
1.0

=10 V

'"

~

--VCE=2.0V
- - VCE = 10 V

V

I-

-H-tf

o. 6

........ t:::::

-

VSElsa!)@lc/la = 10

=-55'C _

~ 20

~

II 111

TJ=25'C

300

10-3 -

40

50

VCE. COLLECTOR·EMITIeR VOLTAGE IVOLTS)

1-345

-0.4

100'C

REVERSE

_

FORWARO

25'C

a
+0.2
+0.4
-ll.2
VSE. SASE-EMITIER VOLTAGE (VOLTS)

+0.&

2N6591,2N6592,2N6593

TYPICAL CHARACTERISTICS «Continued)
FIGURE 9 - THERMAL RESPONSE
1.0

O.

o.~

-

0-0.5

~a
~~ 0.3 1- 0.2

~~

0.2

5~
in ...

O. 1

0.1

t;:;: 'D.05

~~ 0.0 7

Slogle Pulse

~_~ 0,05

~~ 0.03 6.
0.02
0.0 1
0.01

...

I:oiiiijiil

-

-

Single Pulse

PEf1J1

0.02
0.01

I

Duty Cycle, 0 =It/12
0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

loOk

-

ZOJAltl " rill ROJA

ROJA

=62.5 0 CIW Max

o CURVES APPLY FOR POWER

-0\;-J

1"
0.02

ZeJCIII - rill ROJC
ROJC = 12 50 CIW Max

2.0k

PULSE TRAIN SHOWN
READ TIME AT 11
TJlpkl-TC" PlpklROJCll1
5.0 k 10 k

20 k

60 k 100 k

I. TIME Im.1

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
T J(pk) may be calculated from the data in Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

"

200

300

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 11 - POWER DERATING
1.0

"""'" """-..

lO.8

"'
~

"'

o

~

'"z

Therma~

0.6

Derating

~

J

I

Second Breakdown
Derating

"""-..
~

~ 0.4

~

"""-..

1'-..

-""" ~"

"'~

~ 0.2

20

40

60

80

100

TC, CASE TEMPERATURE (OCI

1-346

120

"'-

140

160

®

2N6594
MOTOROLA

12 AMPERE

POWER TRANSISTOR
PNP SILICON

PNP SILICON POWER TRANSISTOR

40 VOLTS
100 WATTS

The 2N6594 is a general-purpose, EPI-BASE power transistor
designed for low voltage amplifier and power switching applications.
It is a complement to the NPN 2N6569.
• Safe Operating Area - Full Power Rating to 40 V
• EPI-BASE Performance in Gain and Speed
•

lower Voltage, Economical Complement to the 2N3055

Lr~
r~K

"MAXIMUM RATINGS
Rating

E

Collector-Base Voltage

VCBO

Value
40
45

Emitter-Sase Voltage

VeBO

5

Vdc

Collector Current - Continuous
- Peak

IC

12
24

Adc

Base Current - Continuous

IB

5

Adc

Collector-Emitter Voltage

Symbol
VCEO(sus)

Operating and Storage Junction

Vdc

17
34

Adc

Po

100
0.572

Watts

T J,Tstg

-65 to +200

wfOc
°c

Symbol

Max

Unit

R8JC

1.75

°C/W

TL

265

°c

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
MaXimum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 seconds

i

Vdc

Ie

Temperature Range

Characteristic

PLANE

10

' - Peak

Emitter Current - Continuous
- Peak
Total Power Dissipation @ T C == 2SoC
Derate above 25°C

~AnN~

Unit

STYLE 1:
PIN I. BASE
2. EMITIER
CASE: COLLECTOR

DIM

A
B

C
D

E
F
G

H

J
K
Q

R

NOTE:
1. DIM "0" IS DIA.

MILLIMETERS
MAX
MIN

-

-

39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67 11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
3.84
4.09 0.151
26.67
Collector connected to case.
CASE 11·01
6.35
0.99

-

(TO·3)

1-347

INCHES
MAX
MIN

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

2N6594

*ELECTRICAL CHARACTERISTICS (TC ~ 2s"C unless otherwise noted.l

I

I

Choractwistic

Min

Symbol

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustelnlng Voltege (1)
IIc = 200 mAde,lB = 0)
Collector Cutoff Current
(VCEV ~ 45 Vde, VBEloff) ~ 1.5 Vdc)
(VCEV ~ 45 Vde, VBE'(oll) ~ 1.5 Vde, TC ~ l000C)

VCEO(susl

(VEB = 6 Vde, IC· 0)

-

-

1
10

Vde
mAde

ICEV

Emitter Cutoff Current

40

lEBO

-

5

mAde

ISlb

2.5

-

Ade

15
5

200
100

-

1.5
4

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VeE ~ 40 Vde, t · 1 • (non-repetltlve))
ON CHARACTERISTICS
DC Current Gain
(lC • 4 Ade, VCE = 3 Vdc)
(lc = 12 _ , VCE - 4 Vde)

-

hFE

Collector-Emitter Saturation Voltage
(lC - 4 Ade, IB = 0,4 Adc)
(lC = 12 _ , lB· 2,4 Adc)

VCE(sati

Base-Emitter Saturation Voltage
(lC = 4 _ , 'B = 0.4 Adc)

VBE(s.tI

Vdc

2

Vdc

DYNAMIC CHARACTERISTICS
fT

2.5

25

MHz

Cob

100

1000

pF

-

0.4

"s

1.5

"s

5
1.6

"s

Currant-Gain - Bandwidth Product
(lC·l Adc, VCE = 4 Vdc, ftest = O,S MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE

~

0, f lest = 1 MHz)

SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time

(VCC· 30 Vdc, IC = 2 Adc, 'Bl = 0.2 Adc,
tp· 26 JJS, DulY Cycl... 1%)

td
t,

(VCC· 30 Vdc, IC = 2 _ , 'Bl = 'B2· 0'.2 Ade,
tp - 25 JJS, DulY Cycle .. 1%)

ts

-

If

-Indicates JEDEC Registered Data.
(1) Pulse Test, PW = 300 JJS, DulY Cycle .. 2%.

FIGURE 1 - SWITCHING TIMES TEST CIRCUIT

Vee
-30 V

-1~

r-r25"s~e
"-0__
RB

Scope

+9.~~-D

01

tr.tf'" 10 ns
Duty Cycle'" 1.0%

-4.0 V

-=

RS and RC Varied to Obtain Desired Current Levels
01 must be fast recovery tYpe.

1-348

"s

2N6594

~ 11.0
~ 0.1 1=0.0.s

~

0.5

~

0.3 r-0~2

w

~ 0.2

~

III

FIGURE 2 - THERMAL RESPONSE

-

ReJCI.) • ,1.1 ROJC
ROJC' 1.1S oC/W Max
o CURVES APPLY fOR POWER
PULSE TRAIN SHOWN
READ TIME AT'l

IP""

~ ;iii

r- 0.1

TJlpk) - TC =Plpk) ROJCI.1

~

O. 1 'li:os
~ 0.07 )--0.02
0.05

f&

ffi

~ 0.03 ~ ~0.01

I-

ffi

u;
z

0.0 21-- ~Sing'ePu'se

DUTY CYCLE. 0

II

~ 0.0 1

0.01

I-

..,

.:;

0.02

0.1

o.os

0.2

o.s

SO .

20

10

2
'. TIME (msJ

100

='1/'2

I I I I 1111
200

SOO

100

FIGURE 3 - SAFE OPERATING AREA
30

20

1-'

. t ...

f-.

._.

.-.d.,
,

',O.5ms

1ml"

I'

, ....

" "

Safe operating area curves indicate IC·VCE limits of the
transistor being observed for reliable operation; i.e .• the
transistor must not be subjected to greater diSsipation than
the curves indicate. Figure 4 may be used to derate the
curves shown or an effective RO JClt} may. be computed
from Figure 2 for pulsed operation.

Sm.
de

,"-,

I- _. _.
-

-

-

Current limited
Tharmally Limited

-.L-.L~LLU
I.

....

......

,

......
"

J.

s
10

20

30

so

70 80

VCE. CoLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 4 - POWER DERATING

""0.8

'"0

t; 0.6
~

'"z
;::

ill

" " "-

,

r--...
r-...

0.4

0

........
0.2

~

o

o

20

40

60

80

100

120

TC. TEMPERATURE (DC)

1-349

140

160

~

180

200

2N6594

IIJ
200

.--

z 100

FIGURE 5 - DC CURRENT GAIN

70

"

50

g

30

~

20

"'"

VCE = 4 V

25°C

lli
=>

.~
~.

III

r- I- ::t}

;;:
~

FIGURE 6 - COLLECTOR SATURATION REGION

T~ .!I~A~I

l- t---

-55°C

.".......:

......

~

1.6

ffi

11

r--.. I""l\..

~

\

~8

_ 0.4

0.5 OJ

0.3

7

>

10

0
5

10

20

1

VSE(on)@VCE'4V

w

~ I--'"

.8

//

100

10

'"~

5000

V

0.5 0.7

10

IC. COLLECTOR CURRENT (AMPERESI

r-

100°C

.L
Ie -ICES

O.

lfo=

0.0 I
0.3

2000

r- TJ = 150°C

~

..L
VCE(satl@ ICIIB = I~_

~

~

II

0.2

1000

1000

a"
"

I>'"

,.:

0
0.1

l...

1/
i",

>

.4

500

VCE =lOV

~~E: I ) @I~/IB! 10

~ 1.2

200

10,000

I ill

·Ini

100

FIGURE 8 - COLLECTOR CUT-OFF REGION

I ill
~

50

IB, BASE CURRENT (mAl

FIGURE 7 - "ON" VOLTAGES

I.6

....

\

~

0.2

TJ '" 26°C

SA

-

0.8

IC. COLLECTOR CURRENT (AMPERES)

.~

llJl
4A

!::

I0

0.1

U
IC = I A

REVERSE_ toF= F=FORWARO

r-- r--r 25°C

to.2

to.1

-0.1

-0.2

-0.3

VSE. BASE·EMITTER VOLTAGE (VOLTS)

1-350

-0.4

-0.5

®

2N6666
2N6667
2N6668

MOTOROLA

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

DARLINGTON
8 AND 10 AMPERE

· .. designed for general-purpose amplifier and low speed switching
applications.

PNP SILICON
POWER TRANSISTORS

• High DC Current Gain hFE = 3500 (Typ) @ IC = 4.0 Adc
•

Collector-Emitter Sustaining Voltage - @ 200 mAdc
VCEO(sus) = 40 Vdc (Min) - 2N6666
= 60 Vdc (Min) - 2N6667
= 80 Vdc (Min) - 2N6668

40-60-80 VOLTS
85 WATTS

• Low Collector-Emitter Saturation Voltage VCE(sat)
2.0 Vde (Max) @ IC 3.0 Adc - 2N6666
VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6667. 2N6668

=

•

=

Monolithic Construction with Built-In Base-Emitter
Shunt Resistors

• TO-220AB Compact Package
• Complementary to 2N6386. 2N6387. 2N6388

·MAXIMUM RATINGS
Symbol 2N6666

Rating
Collector~Emitter

Voltage

Collector-Base Voltage

VCB

Emitter-Base Voltage

VEB

Collector Current - Continuous
Peak

IC

Base Current

la

Total Device Dissipation @ TC = 25°C
Derate above 25°C

Po

Total Device Dissipation @ TA - 25°C

Po

2N6667

2N6668

Unit

60

80

Vdc

60

80

Vdc

•
10

Adc

40

VCEO

..
.
...
...

40

5.0
10
15

a.o

15

Derate above 25°C
Operating and Storage Junction,
Temperature Range

15

•
••
••

250
65
0.52
2.0
0.016

_-6510+150_

TJ. Tstg

Vdc

mAdc
Watts
W/'C
Watts
W/'C

d'LTt

'C

o-ll-

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

Characteristics

R6JC

1.92

'C/W

Thermal Resistance. Junction to Ambient

R6JA

62.5

'C/W

~

!i

"-

3.0 60

l<
Z
Q

~

!a

2.0 40

~

. . . . r---.......

Q



'-'

"9'"
:::l

8

·de ~ J.Om~

TJ = 150°C
- - - Bonding Wire limit
_ _ _ Thermal limit @TC=25°C

....

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ie - VeE limits of the
transistor that must be observed for reliable operation; i.B., the
transistor must not be subjected to greater dissipation than the
curves indicate.

~
~~,
.f~

i""

Second Breakdown limit
Curve. Apply Below Rated VCEO
2N6666
2N6667
2N6668

0.5
0.3
02

The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are

valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may
be calculated from the data in Figure 4. At high case temper-

01

E005
003
0.02

1.0

2.0 3.0
5.0 7.0 10
20 30
VCE. COLLECTOR-EMITTER VOLTAGE (VoLTSI

50

70 100

atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.

FIGURE 7 - CAPACITANCE

FIGURE 6 - SMALL·SIGNAL CURRENT GAIN
10.000

300

I I I

z 5000

... 2000

:c

~

::!

~

t~ 100

TC - 25°C
VCE = 4.0 VOLTS
Ie = 3.0 AMPS

~ 200

~

~
Ci'b-

'-'
z

500

= 25°C

::

1000

~

~

TJ

200

:::::

C~b

~

5

..s

100

70
50

50
20
10
1.0

2.03.0 5.07.010

20 30

5070100

200300500 1000

f. FREQUENCY (kHzI

1-353

30
0.1

0.2

0.5

1.0
2.0
5.0
TO
20
VA. REVERSE VOLTAGE, (WLTSI

50

TOO

2N6666,2N6667,2N6668

OJ
FIGURE 8 - DC CURRENT GAIN

FIGURE 9 - COLLECtOR SATURATION REGION

20.000

26

IC ' 2.0 A

'"
!::;
'"

...~ 3000 ........ .v
1 1
:::>
'"

2:

i

g

....,

Ii! 2000

.

~

40A

\6

aA

TJ' 25°C

1\
\

14

.............

t;

700
500

18

'"
~

TJ'25°Y

1000

\ iI

I JI

VCE,30V

10.000
7000
z 5000 TJ'11500C

>-

300
200 ~
0.1

7'

~

TJ - -55°C

10

~

> 0.6

0.2

0.3

0.5 0.7 1.0
2.0 3.0
IC. COLLECTOR CURRENT (AMPS)

5.0 7 0

a3

10

a5

07

1a
2 a 3.0
50 7 a 10
Is. BASE CURRENT (mA)

20

30

FIGURE 11 - TEMPERATURE COEFFICIENTS

FIGURE 10 - "ON" VOLTAGES
3.0

+50
~ +4.0

TJ; 25°C

>

.!

2.5

....
~

"ICIIB '" hFEI3

+3.0
+2.0

25.C I. 150.C

t

E

t7

+1.0

;"
VBE(sat) @ IC/IB ' 250

§'" -1.0
\(

!.... -3.0
t . 4.0

,/

IJJ..U-- ~

0.5
0.1

VCE( ..I) @ IC/IB ; 250
0.2

0.3

*OVc tor VeE sad

1

ffi w2.0

'VBE @ VCE ; 3.0 V

1.0

- 550C to 250C

8

k:::::: :;.--

-5.0

0.5 0.7 1.0
2.0 3 a
Ic. COLLECTOR CURRENT (AMPS)

'5.0 7.0

10

II II
0.1

0.2

VCE

~

~

1.0

2.0

3.0

COLLECTOR

--..,

,---+-,

30V

I

I
I
I
I

BASE
_TJ=1500C

I

-100"C

I
I
IL ......
N'o.
......
__
_
_""""r-'+-'
_ _ _ _ _ .JI

:: 10 1
~ 100

0.5 0.7

-550C to 25 0 C

-

2S·C

EMITTER

10- 1
+0.6

+0.4

+0.2

-0.2

-0.4

-0.6

-0.8

I
S.D. 7.0 10

FIGURE 13 - DARLINGTON SCHEMATIC

'"o 102

8

0.3

V

.....

-+-tt

OVB f.r VBE

_ 104 =.REVERSE =:!! =FORWARO
103 =

.I

25°C I. 150<>.;.....--

.3

;a

.I

V

lC. COLLECTOR CURRENT lAMP)

FIGURE 12 - COLLECTOR CUT'()FF REGION

'"

~f/

~

-1.0

-1.2

-1. 4

VBE. BASE·EM1TTER VOLTAGE IVOLTS)

1-~54

®

2N6676
2N6677
2N6678

MOTOROLA

III
15 AMPERE

NPN SILICON
POWER TRANSISTORS
NPN SILICON POWER TRANSISTORS

300,350,400 VOLTS
176 WATTS

The 2N6676, 2N6677 and 2N6678 transi~tors are designed for
high voltage switching applications such as:
•

Off-Line Power Supplies

•

Converter Circuits

• Pulse Width Modulated Regulators
Specification Features High Voltage Capability
Fast Switching Speeds
Low Saturation Voltages
High SOA Ratings

FMAXIMUM RATINGS
Rating

Symbol

2N6676

2N6677

2N6678

VCEV

450

550

650

Vdc

Collector Emitter Voltage

VCEX

350

400

450

Vdc

Collector Emitter Voltage

VCEO

300

350

400

Vdc

Emitter 8ase Voltage

VESO

S

Vdc

IC
ICM

15
20

Adc

Collector Emitter Voltage

Collector Current - cont

- peak'

Unit

Base Current - cont

IS

5

Adc

Power Dissipation TC = 25°C
Derate above 25°C

Pr

175
1

Watts

W/oC

Operating and Storage
Junction

TJ;
Tstg

-65 to 200

°C

Thermal Resistance Junction
to Case

R8JC

1.0

°C/W

235

°C

Maximum Lead Temperature
At Distance> 1/16 in.
(1.58 mm) from seating
plane for lOs max.

STYlE 1
PIN 1. BASE
2. EMITTER
CASE COLLECTOR

OIM
A
B
C

o

E

F
G
H

MILLIMETERS
MIN· MAX
39.37
21.08
7.62
1.09
1.18

BS

J
K
Q

R

v
CASE 1-06

1-355

2N6676,2N6677,2N6678

ELECTRICAL CHARACTERISTICS (TC' 25·C unless otherwise noted.)
Symbol

Characteristic

Min

Max

Unit

OFF CHARACTERISTICS
Collector Cutoff Current

-

Emitter Cutoff Current
(VEB • B.O Vdc. IC • 0)

lEBO

Collector-Emitter Sustaining Voltage
(IC' 200 mA. IB • 0)

-

0.1
1.0

-

2.0

300
350
400

-

350
400
450

-

Vdc

VCEX(sus)
·2N6676
2N6677
2N667B

mA
Vdc

VCEO(sus)
2N6676
2N6677
2N667B

Collector-Emitter Sustaining Voltage
(IC' 15 A. Vclamp ' Rated VCEX)

mA

ICEV

(VCE' Rated VCEV. VBE(oll)' -1.5 Vdc)
(VCE' Rated VCEV. VBE(oll). TC' l00·C)

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 1

Clamped Inductive SOA with Base Reverse Biased

See Figure 2

ON CHARACTERISTICS
hFE

B.O

-

-

Base Emitter Saturation Voltage
(IC' 16 A. lB' 3.0A)

VBE(sat)

-

1.5

Vdc

Collector-Emitter. Saturation Voltage
(IC' 15 A.IB' 3.0 A)
(lC' 15 A.IB' 3.0 A. TC' l00·C)

VCE(sat)

-

1.5
2.0

Ihlel

3.0

10

MHz

Cob

150

500

pF

td

-

01

!,s

tr
t.
If
Id
Ir
ts
tf

-

0.6
2.5
0.5
0.4
1.0
4.0
1.0

DC Current Gain
(lC' 15A. VCE' 3.0V)

Vdc

DYNAMIC CHARACTERISTICS
Current Gain

(lC' 1.0 A. VCE' 10 Vdc. I ' 5.0 MHz)
OulpUl Capacitance
(lC' 1.0 A. VCB' 10 Vdc. I· 0.1 MHz)

SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
StoraQ8 Ti me
Fall Time
Delay Time'
Rise Time
Storage Time
Fall Time

VCC = 200 V. IC' 15 A.
IBI • IB2 • 3.0 A. tp' 20 !'s.
Duty cycle';;; 2.0%
VBB~ 6.0V. RL ~ 13.5 n
(See Figure 3)

TC' 25·C

TC' lOO·C

L' 50!,H
Vclamp ' Rated VCEX
(See Figure 3)

1-356

-

-

2N6676.2N6677.2N6678

FIGURE 1 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA
20

~
:;

5-

10
7.0
5.0
3.0
2.0

~

a:i
~

a

..

16

.1.1:~ClOI4S1.0 m.
Tc; 25°C §

de
TC; 100°C

:3

Bonding Wire limit

g'-' 0.10
00 7

Thermal limit

0.30
G 0.20

Second Breakdown limit
2N6676
2N6677
2N6678

S? 0.0 5

0.0 3,
0.024.050 7 0

10
20 30
50 70 100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

_. -

2 •
TC';; 100°C

i

de
TC - 25°C

, ,

14

~
5-

TC - 25°C

1.0
0.7 0
0.5 0

III

FIGURE 2 - MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

t-- V8E(onl = 1.0 to 6.0 volts
10

o.

=>

'"

~

8. 0

~::l

6.0

2N6676

8

4.0

2N6677

2. 0

2N6678 ..

S?

0
200 300 400

I

I

I

I

J 1

100
200
300
400
VCE. COLLECTOR TO EMITTER VOLTAGE (VOLTSI

500

SAFE OPERATING AREA INFORMATION
FORWARD BIAS

REVERSE BIAS

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; Le., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 1 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC:;;' 25°C. Second breakdown limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific valu, of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 2
gives the RBSOA characteristics.

1-357

2N6676,2.N6677,2N6678

lIB

FIGURE 3 - SWITCHING TIME MEASUREMENTS
FOR 2N8878. 2N8877. AND 2N8878
NC

Ad) For IBI
VBl

Ion

RL = 13.5 nl30 W
NON INO

NONINO
2.0W

SWI

02540M

lN4933
0.001 "F

47

180

10

Vcc As
SpecifIed

lN914

IN3891

3.3 K

+

2.2

VClamp
= VCEX

.--=- VB(Clamp)
t-

24
100

+
VB2
Ad) For IB2
01. 02
03
04. 05. 06. 07
NOTE:

=
=

2N6350
2N3762
= CA3725 Ouad Translslor Array

Battery symbols VCC. VB1. V82. VB(clamp)
indicate rigorously filtered voltage sources
at the circuit terminals to accommodate the

X

fast rise and fall times and high currents present in the circuit.

NOTE:

-=

o

SWI closed for Ir. Is. If. SWI open for Ie·

10%

I
I

:

Id = A-B
Tr = B-C
Is =X-V
If =V-Z
ttransistion = X-W
NOTE:

90%

W

IB2 - __ L ____________ I--_ _- J

:
I

IC

TRANSITION TIME FROM 90%
IBI 10 90% IB2 MUST BE LESS
THAN 0.5 "s

1·358

I

I
)

90%

)

I

I
I

B

V

+

-=..._

®

2N6833
2N6834

MOTOROLA

Designer's Data Sheet

ID

5,0 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCH MODE III SERIES
NPN SILICON POWER TRANSISTORS

460 VOLTS
80 8nd 126 WATTS

These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for line-operated switchmode applications.
Typical Applications:
2N6833

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
• Fast Turn-Off Times
50 ns Inductive Fall Time - 75°C (Typ)
70 ns Inductive Crossover Time - 75°C (Typ)
500 ns Inductive Storage Time - 75°C (Typ)

STYlE 1
PIN 1 BASE
2 COllECTOR
3 EMITTER
4 COLlECTOR

• Operating Temperature Range -65 to +150°C
• 100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Rating

Symbol

2N6833

2N6834

Unit

Collector· Emitter Voltage"

VCEOlsus)

450

Vdc

Collector-Emitter Voltage"

Vdc

VCEV

850

Emitter Base Voltage*

VEB

6.0

Vdc

Collector Current - Continuous·
- Peak (1)

IC
ICM

5.0
10

Adc

Base Current - Continuous·
-Peak(l)

IB
IBM

4.0
8.0

Adc

Total Power Dissipation@TC=25°C"
@TC= 100°C"
Derate above 25°C*

Po

Operating and Storage Junction
Temperature Range*

CASE 221A-02
TO-220AB

J~E.

c

2N6B34

80
32
0.64

125
71.5
0.714

TJ, Tstg

-65 to
+150

-65 to
+200

Symbol

2N6833

R8JC

1.56

t.

.

D

•

j

r=~F.

Watts

---r

W/oC

Q

°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case*
Maximum Lead Temperature for Soldering
Purposes: 118" from Case for 5 Seconds"

TL

I 2N6834
J 1.40

275

Unit

°C/W
°c

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle .. 10%.
*Indicate JEDEC Registered Data

De.igner'. Data for "Worst Ca.... Condition.
The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Limit data - representing device characteristics boundaries - are
given to facilitate "worst case" design.

1-359

CASE 1-06
TO-204AA (Forme.ly TO-3)

2N6833,2N6834

IIJ

ELECTRICAL CHARACTERISTICS (TC = 2S·C unless otherwise noted)

IL ______~__________~C_h_a_ra_~__e_ri_.a~·C------------~------IL--s~Y~m-b_o_I__~__M_i_n__

T~yp~__L-__M_a_x__-L___u_n_i_t__--l1'

i -___

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)

VCEO(sus)

450'

-

-

-

0.25'
1.5'
2.5

mAde

1.0'

mAde

Collector Cutoff Cur~ent
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = loo·C)

ICEV

Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 n, TC = l00·C)

ICER

-

-

Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)

lEBO

-

-

Vdc
mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figures 15' and 16'
See Figure 1 7

Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(lC = 1.5 Adc, IB = 0.15 Adc)
(lc = 3.0 Adc, IB = 0.4 Adc)
(lC = 3.0 Adc, IB = 0.4 Adc. TC = l00·C)

VCE(sat)

Base-Emitter Saturation Voltage
(lC = 3.0 Adc, IB = 0.4 Adc)
(lc = 3.0 Adc, IB = 0.4 Adc, TC = lOO·e)

VBE(sat)

OC Current Gain
(lc =. 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vde)

Vdc

-

-

1.0
2.5'
2.5'

-

-

1.5'
1.5

7.5'
5.0

-

30'

'r

15'

-

75'

MHz

Cob

20'

-

200'

pF

30
100
1000
60
400
130

100'
300'
3000'
300'

ns

500
100
120

1600'
200'
250'

Vdc

-

hFE

-

DYNAMIC CHARACTERISTICS (2)
Current Gain - Bandwidth Product
(VCE = 10Vdc,IC= 0.25 Adc, f test = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Re.istive Load (Table 1)
Delay Time
Rise Tirne
Storage Time
Fall Time
Storage Time
Fall Time
Indu~ive

(IC = 3.0 Adc,
VCC: 250 Vdc,
IBl = 0.4 Adc,

(IB2 = 0.8 Adc,
RB2: 8.0 n)

PW=30~s,

Outy Cycle "';2.0%)

(VBE(off): 5.0 Vdc)

td
tr
ts
tf
ts
tf

-

-

Load (Table 2)

Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time

(IC : 3.0 Ade,
IBl : 0.4 Adc,
VBE(off) : 5.0 Vdc,
VCE(pk) = 400 Vdc)

tsv
tfi
tc
tsv
tfi
tc

(TC: l00·C)

(TC = lS0·C)

(1) Pulse Test: PW - 300 P.s, Dutv Cvcle "E;;2%.

(21,,..1 h,.1 'te.t
-lndicatesJEOEC Registered Limit

'.360

-

-

-

600
120
160

-

ns

2N6833,2N6834

l1li
TYPICAL STATIC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
60

2.0

50

z

II

t--

30
20

c
'"

10

Ia
?

!:;

~
~

N

:;;:

....
'"

'"co

I

TJ-l00°C

'"""
!:;
~

-55°C

'"

~

~

0.5

...
~

0.1
003

50 70 10

~

3.0
2.0

~

co

«

/

~ 1.0

~

~

0.50

~

./.

./

1.5

10
070

'\.

{;'

I I
05

02

1.0
2.0
I.e. COLLECTOR CURRENT (AMPS)

50

10

0.5

2.0
1.0
IC. COLLECTOR CURRENT (AMPS)

02

/
TJ·'50OC

/

Cib

~

:::

z

~

1== C=)50C
REVERSE

10-1

T~ ~'25°C

""1-

~

I

IOQOC

100

~ 1O00

/

F= i=,25Oc

~

~

10

FIGURE 6 - CAPACITANCE

L

101

5.0

10000

103
....~
102

-

Ill' 10
TJ,IOOoC

...

TJ ' 25°C

FIGURE 5 - COLLECTOR CUTOFF REGION

~
8

2.0 3.0

Ill' 5
TJ' 25°C

~
I-"
~ 0.50

- III - 5

r-

0.10

0.05
0.1

/

V

"

0.20

~
~
i!i

TJ - 100°C

r-- III - 10
I--I--- TJ ' 25°C

104

ia

"-

20

~

III - 10

>

!~

'"

0.5 0.7 10
02 0.3
Ia. BASE CURRENT (AMPS)

~

~

""
1=

"-

"

IIIII

DDS 007 0.1

t-....

....... "-

3D

5.0

'"co

'\.

FIGURE 4 - BASE-EMITTER VOLTAGE

FIGURE 3 - COUECTOR-EMITTER SATURATION VOLTAGE

!:;

SA

\

;;l
8 02 f- TJ' 25°C

05 07 10
20 3D
IC. COLLECTOR CURRENT (AMPS)

\4A

,

1\

co 0.3
t;

5.0 I--- -VCE,50V

03

\3A

10

!

7.0

02

2A

co 0.7
>

25~
~f

3.0
01

II II

I I II \
[\ IC' 1 A



7.0

\
/lf~4

J

\
\

6.0

1_c-

TJEO;IOOoC _

I--

II:

co 5.0
t;

~
co 4.0

.....
~

t
g

1\
\

3.0
2.0 I - - ~ VBE(olf)' 0 V /

I"

1.0

oo

100

/1

1

t

200

500

700

~

:f
co

r- I'-.
I"

~~

Second B,••kdown

-... ~O"'lml
-... r--

......

0.6

z

Thor....
a....ring

0.4

"-

-

~~

" r---..

0

I.........

Thlrm.~

i'-..

100
120
80
TC. CASETEMPERATURE fOCI

....... ~

~

............

"

0

"60

-

..............

"-

"'" .....

Ii? 0.2

Second STeak.down _
Deu11ng

.......1'-..

Olrltlng ~

'"~

020

1000

FIGURE 19 - POWER DERATING
(2N8834)
I(JO

i'-..

0.8

850

PEAK COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 1S - POWER DERATING
(2N8833)

~ I'-.

1

\ "'<..

I

VCE(pk~

VBE(off) • 1.0 TO 5.0 V I - -

i'-..

'40

o

o

'60

40

80

120

160

"

.........
200

TC CASE TEMPE HATU HE lOCI
+Vdc ~ "

TABLE 1 - RESISTIVE LOAD SWITCHING
td and tr

Vdc

ts and tf
OV

~-35lf
A

50

'2.\1

~
In

OV

~

VCC=250Vdc
RL = 83 n
le= 3.0Adc
18 = 0.4 Adc

-v

J[J;
v

OV

-5 V

"IB

t r s;,;;15ns

·Tektronix

P-6042 or
Equivalent

Vee' 250
RL' 83
Ie' 3.0 Adc

n

33

IB1 = 0.4 Adc
RBI = n
IB2 = 0.8 Adc
R82 = 8.0 n
For VBE(off) = 5.0 V R82 = 0 II

"Note Adlust -V to obta.n desired VBE(off) at POint A.

1-364

2N6833,2N6834

TABLE 2 - INDUCTIVE LOAD SWITCHING

20

o

lO~F

<-35lf

A

fF

50

• I---......- - - L

500

~IC(Pk)

-V

IC~

T,-I I--.V
OV~
-~

"--

VCE(Pk)-"h

VCE~
T,

~ Leo,1 (lCpkl

L-

50

VCC
T, adjusted to obta," IC(pkl
V(BRICEO
L = '0 mH
RB2 = x
VCC = 20 Volts

Inductive Switching

·TektroOlx

P-6042 or

Scope - Tektrontx
7403 or

Equivalent

EquIValent

L=200~H

RB2 =0
VCC = 20 Volts
RS 1 selected for desired 181

RBSOA
L: 200"H
RB2 = 0
VCC: 20 Volts
RB 1 selected for desired IB 1

t

o. 7

~

O.3

~

O.2

;

0=0.5

0.5

0.2

0.1
0.1
~ 0.071-- 0.05
~ 0.05
I-- 0.02
%
:: 0.03
ffi 0.02f-

.....

~

u;

!.-

0.0 1 ......
0.01

""1

=---

t;iio'l""'"

!

t

Plpk)

4J:!1-,......,. . . . . . . . .

.....

11

Duty Cycle, 0 = 1,/12

S'iG~E i~Lr~ I
005

01

Road Timo @ I,

TJlpk) - TC = Plpk) R9JCII)

12

I

I"'"

0.02

R9JCII) = rll) R9JC
R9JC = , 56°C/W Max

I

...LUll.
02

05

10

2
I. TIME (ms)

""

I
20

I

I I I I
50

t.il 11 -.l 1.l..lJl
100

500

200

1 k

FIGURE 21 - 2N6834
10
07
05

~

~

::is
%'"
~~

,.

0.01

~=

005

Si;
......
:tat;

D~es Applyfo'i p~

0.3

02

...
~~
:~

.-'"

R9JCII) = rill R9JC • ~.'=
ReJC = '.4 °CIW Max -

t-.:

Pulso Train Shown
Road Time @I,
TJlpk) - TC = Plpk) R8JCII)

IiiII
0=05
02
01
005
002
001
SINGLE PULSE

0.1

0.03

0.02

005

01

02

03

0I

r=

t-

r-

·'-fUl ~ F:l==
Plpk)

:::

...

. - t-

-

t-

IDuly Cyclo, 0 = 1,/12 -

t-

~~j

--

=1=

~lJJ.ililll

0.01
0.02 003

f=

1=
r-

10

20

30

10

10

I, TIME fIns}

1-366

20

30

50

100

200

300

500

1000

2000

2N6835

®

MOTOROLA

III

D(>sig-ner's Data Sheet

8 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCH MODE III SERIES
ULTRA-FAST NPN SILICON POWER TRANSISTORS

450 VOLTS
150 WATTS

These tra nsistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for line-operated switch mode applications.
Designer's Data for
"Worst Case" Conditions
• Switching Regulators
The Designers Data Sheetpermits
• Inverters

the design of most circuits entirelvfrom
the information presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" design.

• Motor Controls
• Deflection Circuits
• Fast Turn-Off Times
90 ns Inductive Fall Time - 75°C (Typ)
90 ns Inductive Crossover Time - 75°C (Typ)
450 ns Inductive Storage Time - 75°C (Typ)
• Operating Temperature Range -65 to +200oC
•

100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

Rating

STYLE 1

Symbol

Max

Unit

Collector-Emitter Voltage

VeEO(sus)

450

Vdc

Collector-Emitter Voltage

VeEV

850

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Ie
ICM

8.0
16

Adc

IB
IBM

6.0
12

Adc

Po

150
B5.5
0.86

Watts

w/oe

TJ. Tstg

-65 to +200

°e

Symbol

Max

Unit

R8JC

1.17

°e/w

TL

275

°e

- Peak(1)
Base Current -

Continuous

- Peak (1)
Total Power Dissipation @ TC = 25°C
@Te=1000e
Derate above 25°C

Operating and Storage Junction

NOTES
1 DIMENSIONS 0 AHD V ARE DATUMS
2
IS SEATING PLANE ANO DATUM.
3 POSITIONAL TOLERANCE fOR
MOUNTING HOLE 0

m

1.11""""'0ITlv01
fOR LEADS,
1.1 ~""."",eT 1v01 Q01
4 DIMENSIONS AND TOLERANtES PER
ANSIYI4S, 1973

Temperature Range

'THERMAL CHARACTERISTICS
Characteristic

Thermal Resists nee, Junction to Case
Maximum Lead Temperature for Soldering

..J.

PIN 1. BASE
2 EMITTER
CASE COLLECTOR
Q

Collector Current -

Continuous

t9/2 4'
-

'MAXIMUM RATINGS

Purposes: 1IS" from Case for 5.0 Seconds
(1) Pulse Test: Pulse Width::: 5.0 ms. Duty Cycle ~ 10%.

CASE 1-05
TO-204AA Type
(TO-3Typel

"Indicate JEDEC Registered Data

1-367

2N6835

IIJ

I

ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise noted) ,

I

Characteristic

Typ

Max

Unit

450'

-

-

Vde

-

0.25'
1.5'

-

2,5

mAde

-

1.0'

mAde

Symbol

OFF CHARACTERISTICS (1)
Collector-Emiller Sustaining Voltage (Tabl& 2)
(lC= loomA,IB=O)

VCEO(sus)

Collector Cutoff Current
(VCEV = B50 Vdc, VBE(off) = 1.5 Vde)
(VCEV = 850 Vde, VBE(off) = 1.5 Vdc, TC = 100°C)

ICEV

Collector Cutoff Current
(VCE = 850 Vdc, RBE(off) = 50 n, TC = l000C)

ICER

-

Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)

lEBO

-

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 15'

Clamped Inductive SOA with' ease Reverse Biased

See Figure 16

ON CHARACTERISTICS (1)
Collsetor-Emitter Saturation Voltage
(lC = 3.0 Ade, IB = 0,40 Ade)
(lC = 5.0 Ade, Ie = 0.66 Ade)
(lc = 5.0 Ade, IB = 0,66 Ade, TC = l000C)

VCE(sat)

Base-Emiuer Saturation Voltage
(IC = 5.0 Ade, Ie = 0,66 Ade)
(Ic = 5,0 Ade, IB = 0.66 Ade, TC = l000C)

VBE(sat)

-

1,2
2,5'
3.0'

-

-

1.5'
1.5

7,5'
4,0'

-

30'

fy

10'

-

75'

MHz

Cob

50'

-

350'

pF

lei
t

-

20
85

50'
250'
2500'
250'

ns

-

-

DC Current Gain
(lC= 5,0 Ade, VCE= 5,0 Vde)
(IC = 8.0 Ade, VCE = 5,0 Vdc)

Vde

-

-

Vde

-

-

hFE

-

DYNAMIC CHARACTERISTICS (2)
Current Gain - Bandwidth Product

(VCE = 10 Vde, IC = 0,25 Ade, f test = 10 MHz)
Output Capacitance

(VCB = 10 Vde, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time

Storage Time
Fall Time
Storage Time
Fall Time

(lC= 5.0 Ade,
VCC = 250 Vde,
leI = 0,66 Ade,
PW= 3OI'S,
Duty Cycle ';;2.0%)

(lB2 = 1,3 Ade,
RS2 = 4.0 n)

'-

1000

If
Is
If

-

70
500
100

tsv
tfi
Ie
tsv
tfi

-

t~

(VSE(off) = 5.0 Vde)

-

-

Inductive Load (Table 2)
Storage Time
Fall Time
Crossover Time

Storage lime
Fall Time
Crossover Time

(lC= 5,0 Ade,
lSI = 0,66 Ade,
V8E(off) = 5.0 Vde,
VCE(pk) = 400 Vde)

(TC = l000C)

(TC= 150°C)

Ie

(1) Pulse Test: PVV - 300 ~., Duty Cycle .. 2%,

(2) t,. = I she I 'test
·Indicates JEOEC Registered limit

1-368

-

700
80
150
800
80
200

1800'
200'
250'

-

ns

2N6835

ID
TYPICAL STATIC CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

100
50
z


i

~

2.0 V

~

'\

-~

:::0

FIGURE 10 - COLLECTOR CURRENT FALL TIME

VBElolf) • 0 V

t-

r---~

VBE(olf) • 2.0 V.
.1

:==111'5
70 I - - TJ' 75°C
_
;I: 50 I - - VCE(pk) = 400 V
40
1.0

I

" r-....

VaE(oII) • 5.0 V

I

2.0

3.0

5.0

7.0

10

Ie COLLECTOR CURRENT (AMPS)

Ie COLLECTOR CURRENT lAMPS)

FIGURE 11 - CROSSOVER TIME

,

500

200

"-

I'-....... I--.......
.........

i

,

,"' .i

- - VBE(olf)
;100 ==111=5
-I'
_
TJ.75°C
VCE(pk) = 400 V
70 -

1.0

I

I

1

2.0

3.0

fa

I
I J .'.
lIaE(olf) • 5.0 V

~

I\.

~

sO

FIGURE 12 - CROSSOVER TIME
500

....... ...........

............

.!

~

10

400 r---,---,----.---,---,----r---.---.---r,

"'100

_ 300

7.0

5.0

I'--.. 5~ t\

:f

1

1

3.0

IC. COLLECTOR CURRENT lAMPS)

FIGURE 9 - COLLECTOR CURRENT FALL TIME

I

.......

VaElolf) = 2.0 V

400

,
2.0

Ie COLLECTOR CURRENT lAMPS)

400

--... r---

VaElolf) = 0 V

,..-

J. o1--/11.5
50 I---- TJ • 75°C

TJ.75°C
VCElpk) = 400 V -

!

.1

_

VaEloII) • 2.0 V

~~

STORAGE TIME

FIGURE. 8 3000

~

.......

I

l

~

1/

~

..........

~

;

VaEloff) = 0 V

.1

100

~_

;---111=10

VaE(oII) = 2.0 V

1
5.0

70

1
7.0

10

Ie COlLECTOR CURRENT (AMPS)

50

VaElolf) = 2.0 V

~tl'-;~/

IE

,

1

200

I

).

V

300

~ TJ = 75°C

r-- VCElpk)
• 400 V
"
,

1.0

2.0

-

.....

VaEloII)' 5.0 V
1

3.0

J.
5.0

Ie COllECTOR CURRENT lAMPS)

1-370

r--

'"

....... .......
.......
7.0

10

2N6835

FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
IC,:!---

. / i"""'"

I

."

~EIPkl

/
VCE

10001;VCElpkl
90%181

-

-- --\- -- --

"
"""'"

I"

10% .......
IC pk

isg§
a

IBI = 1.0 A

....---- r-

4.0

~

U)

~

~~

III
ffi

~

2.0

.;

- -

--

~

;;;
~

:$. 6.0

'NfI~",- 1-',,---} '-"-\ I -

I- r--'sv

'a- r-

r----

90% VCElpkl A1\9II'lIIC(Pkl

/'
IC/

FIGURE 14 - PEAK REVERSE BASE CURRENT
B.O

V/

v ....--

~IBI

----

=0.5A

...........

IC=5.0A._
TJ = 25°C

V

o

o

2.0

4.0

r----

8.0

6.0

V8E(olfl' REVERSE BASE VOLTAGE (VOLTSI

TIME

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 16 - MAXIMUM REVERSE BIAS
SAFE OPERATING AREA

FIGURE 15 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
16

16
10
U)

~

5.0

....

2.0

:$.
~

g§

a

0:
CI

....

.....

g§

...

m.

:::>

1.0

0.1

III;;' 4.0
TJ';;1000C -

-

0:

0.5

0.05

12

~

_"\.
1.0

Tc= 25°C:

~ 0.2
CI
~

~

:$.

t;

...

\
\
\

U)

10 II'

§o- -

0.02
5.0

-

=~

CI
t; 8.0

~

d.

.

8

~

BONDING WIRE LIMIT
- - THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10

20

50

~

g
100

200 300

450

VCE. COLLECTOR-EMmER VOLTAGE (VOLTSI

VBE(oHI = 1.0 TO 5.0 V

4.0

~

1\ .i.
L \ ~

r-- r- VBE(oHl = 0 V /
o
o

i

I

I

r---

I
....,...,

400
800850
200
600
VCE(pkl' PEAK COLLECTOR-EMITTER VOLTAGE (VOLTSI

1000

SAFE OPERATING AREA INFORMATION
the power that can be liandled to values' less than the
limitations imposed by second breakdown.

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 15 is based on TC = 25"C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid lor duty cycles to 10% but must be
derated whenTc;;. 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 17.
At high case temperatures, thermal limitations will" reduce

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
lI:ondition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode_ Figure 16
gives the RBSOA characteristics.

1-371

2N6835

FIGURE 17 - THERMAL RESPONSE
1

~
c-

",0
",,,,

...

~~
~

o.11=0' 0.5
o.5
o.3~ 02

ffi~ O.2

;;;11:

ZO

I--

R.JC(I) - ,II) R.JC
R8JC(l) " I 11 oelW

01

I- ,....."",

cz
=:
.0 .1F==,o.oS
~~o.o

11=== 0.02

~ ~ 0.05

PmJl

:fen

~~o.o3 -

'2

""11

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AlII
TJlpk) c TC' Plpkl ""JCUI

:;0..

....+c::

0.01

--l

I II I

0.0 1

0.01

0.02 0.03

..J

f-

11
1--12

0.021-- SINGLE PULSE

DUTY CYCLE.
0.05

01

02

0.3

10

OS

20

30

50

100

200

o· 11'12
300

SOD

1000

t. TIME Imsl

FIGURE 18 100

"'Ii::: :-....
~ f'-..

l80
a:
o

I"

t;

POWER DERATING

...... r-...

Thermal'Demmg

:tOO

'"z
~

f""...
r-...

o

a:

w

-

Derallng

t'-..

::;40

~

Second Breakdown

"

......

t---..

f""...

........

0

o

o

40

120
80
TC. CASE TEMPE R'ATU RE iOC)

160

'""

,"-.,.
200

+Vde = 11 Vde

TABLE 1 - RESISTIVE LOAD SWITCHING

td and tr

t. and tf
OV

=-35lf

P

A

'02"F

50

500

1 O"F
.

-v

.Vee; 250 Vde

Rl;

~

Yin .
OV

IIV

~

son

Ie; 5.0Ade
IS; 0.5 Ade

~
v

OV

-5 V

.

J
T.U T.

t r -:S;;lSns

.~

-Tektronix
P-6042 or
Equivalent

Vee; 250Vdc
RV SOil
Ie; 5.0 Ade.

r:EL

~

1

lRL
J

Vee -

lSI ; 0.5 Ade
RBI; 2011
IB2; 1.0 Ade
RB2 ; 4.0 Il
For VBE(off) ; 5.0 V RB2 ; 0 Il

ONate: Adjust -v to obtain deSired VBE(off) at POint A.

1-372

2N6835

III
TABLE 2 - INDUCTIVE LOAD SWITCHING
002 "F

20

o

10 "F

~-351f

A

50

-V

~Ie(pk)

le~

'--

~Pk)
A

T1

=

Lcoo! (lepk)
Vee

VeE~

(e>I----if&t--f

50

T1 adjusted to obtain lC(pk)
V(BR)CEO
L = 10 mH
RS2 = x
Vee = 20 Volts

L= 200"H
RS2 = 0
Vee = 20 Volts

RBSOA
L=200"H
RS2 = 0
Vee = 20 Volts

RSl selected for desired IS1

Re 1 selected for deSired '81

*Tektronlx

Scope - Tektronix

Inductive Switching

P-6042 or

7403 or

EQUivalent

Equivalent

Note: Adjust -V to obtaon deSired VBE(off) at Pomt A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS
lC(pk) = 5.0 Amps
IB1 = 0.5 Amp
VBE(off) = 5.0 Volts
VeE(pk) = 400 Volts
Te= 25 0 e
Time Base;::;

100 nslem
lC(pk) = 5.0 Amps
IB1 =0.5Amp
VBE(off) = 5.0 Volts
VCE(pk) = 400 Volts
Te = 25°e
Time Base

=

20 nslem

1-373

L-

2N6836

®

OJ

MOTOROLA

Designer's Data Sheet
15AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCHMODE III SERIES
ULTRA-FAST NPN SILICON POWER TRANSISTORS

4&0 VOLTS
17& WATTS

These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time iscritical. Thev
are particularlv suited for line-operated switchmode applications.
Designer'. Dote for
"Worst Case" Condition.

• Switching Regulators
The DeSigners Data Sheet permits
the design of most circuits entirelyfrom
the information presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" design.

• Inverters
• Motor Controls
• Deflection Circuits
• Fast Turn-Off Times
30 ns Inductive Fall Time - 75°C (TVp)
50 ns Inductive Crossover Time - 75°C (TVp)
600 ns Inductive Storage Time - 75°C (Tvp)
• Operating Temperature Range -65 to +200oC
• lOQ°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

~
•

~

"MAXIMUM RATINGS

STYLE 1
PIN 1. BASE
2. EMITTER
CASE COLLECTOR

.

c

D

•

---~

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO(susl

450

Vdc

Collector-Emitter Voltage

VCEV

S50

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current - Continuous
-Peak(1)

IC
ICM

15
20

Adc

Base Current - Continuous
-Peak(1)

IB
IBM

10
15

Adc

Total Power Dissipation @ TC = 25°C
@TC=·1000C
Darate abow 25°C

Po

175
100
1.0

Wails

1*11."IO.1I0510I,lv01

W/oC

I * I 1"tM'510' I v01 Q01

TJ, Tstg

-65 to +200

°c

Symbol

Max

Unit

R8JC

1.0

·C/W

TL

275

°c

Rating

Operating arid Storage Junction
Temperature Range

Q

NOTES
I DIMENSIONS Q AND V ARE OATUMS
2
IS SEATING PLANE AND DATUM
3 POSITIONAL TOLERANCE FOil
MOUNTING HOLE Q

rn

FOR LEADS
4 DIMENSIONS ANO TOLERANCESPEfI
ANSI Y145. 1973

"THERMAL CHARACTERISTICS
Characteristic
Thermal Resista.nce. Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1 IS" fro';;.Case for 5.0 Seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle :s;;; 10%.

'-05

*Indicate JEDEO Registered Data

TO-204AA Type
(TO-3Typel

1-374

2N6836

I

ELEctRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

450'

-

-

Vdc

-

0.25'
1.5'

-

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 2)
(IC= l00mA-IB=O)
Collector Cutoff Clment
(VCEV = B50 Vde, VBE(off) = 1.5 Vde)
(VCEV= B50 Vdc, VBE(off) = 1.5 Vde, TC = lCOOC)

ICEV

Collector Cutoff Current
(VCE = B50 Vde, RBE = 50 0, TC = 1COOC)

ICER

-

Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)

lEBO

-

mAd~

-

2.5

mAde

1.0'

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 15*

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 5.0 Ade, IB = 0.7 Ade)
(lc = 10 Ade, IB = 1.3 Ade)
(IC = 10 Ade, IB = 1.3 Ade, TC = 100°C)

VCE(sat)

Base-Emitter Saturation Voltage

VBE(sat)

-

1.2
2.5'
3.0'

-

-

1.5'
1.5

7.5'
5.0'

-

30'

fT

10'

-

75'

MHz

Cob

50'

-

400'

pF

td
t,

-

20
200
1200
200
650
80

100'
500'
3000'
350'

ns

-

800
50
90
1050

1800'
200'
250'

ns

(IC = 10 Ade. IB = 1.3 Ade)
(lC= 10Ade,IB= 1.3 Ade, TC= 1 COO C)
DC Current Gain
(lC = 10 Ade, VCE = 5.0 Vde)
(lc = 15 Ade. VCE = 5.0 Vde)

Vdc

-

Vdc

-

hFE

-

DYNAMIC CHARACTERISTICS (2)
Current Gain - Bandwidth Product
(VCE= 10Vdc,IC=0.25Ade,ftest= 10MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Reoistiw Loed (Table 1)
Delay Time
Rise Time

Storage Time
Fall Time
Storage Time
Fall Time

(IC= 10 Ade,
VCC = 250 Vde,
IBI = 1.3 Ade,
PW= 30 !is,
Duty Cycle ';;2.0%)

(lB2 = 2.6 Ade.
RB2 = 1.60)

(VBE(off) = 5.0 Vde)

ts
tf
ts
tf

Inductiw Loed (Table 2)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall ime
Crossover Time

(lC= 10Ade,
IBI = 1.3 Ade,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vde)

tsv
tfi
te
tsv
tfi

(TC = lCOOC)

(TC= 1500C)

Ie

(1) Pulse Test: PW - 300 ~•• Dutv Cycl. ';;2%.
(2) IT

=I she I 'test

• Indicates JEDEC Registered Umit

1-375

-

70

120

2N6836

TYPICAL STATIC CHARACTERISTICS

FIGURE 2 - COLLECTOR SATURAT10N REGION

FIGURE 1 - DC CURRENT GAIN
2.0
50

...
'"

I

....
is
'"
'"

20

u

10

B
c

r--I'-

:

I'-,"

~

~

10

~
::-

0.7

~

05

~

0.3

!;i

10
20
50
IC. COLLECTOR CURRENT lAMPS)

05

10

in
c

a

1.0

~

ffi

0.10
111= 10
Tc = 25°C

"-

010

~O:07

0.05
0.15 0.2

0.3

----

-

a5

- -

'";;; a 50
~

;>"

1--'"".......

V :"-

10

1.0
2a 3a
5 a 7 a 10
Ie. COLLECTOR CURRENT (AMPS)

15

I

-

TC - 25°C

75°C

I-""

!0- f.- f-

.....

100°C

040

>l
~ 030

,

.;'

5.0

070

~

111= 10
TC = 100°C

-

0.50

~ 0.20

u

10

~

:::l

c

ill = 10

~

:E
~ 0.30
c

f I /I

FIGURE 4 "'- BASE-EMITTER VOLTAGE

2.0

!::

TC = 25°C

II

0.1
0.2
0.5
1.0
2.0
lB. BASE CURRENT (AMPS)

15

3.0

;!

"r-..

0.05

0.02

20

5.0

~
~

III

I'.....

II

I

0.1

FIGURE 3 - COLLECTOR-EMITTER SATURATIiON VOLTAGE

~

SA

I

~

::-

I

10 A

0.2

8

"

VCE-50V

30

1\

IC = 1 A

~

50

1\

\

~

~25°C

02

\

'"co~

HTC~ lJOJC

;Ii

111= 5
TC= 25°C

07 1 a
2.0 3 a
5 a 7.0
IC. COLLECTOR CURRENT lAMPS)

==

=

10

~ 020
015

a 15 a 20 a 30 a 50 a 70

15

FIGURE 6 - COLLECTOR CUTOFF REGION

FIGURE 6 - CAPACITANCE
10000

.~

/

~

103

a

102

-

-TJ"ISO·C

~

10

lOO·C

1

.?100

1/

~

......5

::l
z

I

.,/

7S·C

-

-REVERSE

;:l
u

FORWARD

-0.2

1000
500
300
200

C.b

100

TC - 25°C

50

'VCE"2S0V=
2S·C

10" 1
-0.4

1= Cib

5COO
3000
2000

I
I

12S·C

'"c

....c

.;'

,

/

20
+0.2

+0.4

_

10

+0.6

0.1

VBE. BASE·EMITTER VOLTAGE (VOLTSI

1-376

1.0
10
100
VR. REVERSE VOLTAGE (VOLTS)

850

2N6836

III

TYPICAL DYNAMIC CHARACTERISTICS

--

FIGURE 7 - STORAGE TIME

5000

f- VB£(oII) =0 Vohs

3000
2000 f- VaE(o") =2.0 Voh.

,

!Iooo ~ VaE(oII) =5.0 VoIlI

~

i ::

~
::E

>=
~

~

;l!
Q

_to 200

100
0.07
0.05
I

FIGURE 8 - STORAGE TIME

SOOO

PI =5
TC =75°C
VCC =20 Voh.~

-

300

J

200

2.0

3.0
5.0
7.0
Ie. COLLECTOR CURRENT (AMPS)

1.5

1-1"

~ 200
Ii

S

1:..;;;;--"

'k

VaE(olfl =2.0 Vol.s

2.0

300

:t

200

::;

a'"
'"
!ii::;
Q

\.

I
15

SoO

~

3.0
5.0
7.0
IC. COlLECTOR CURRENT (AMPS)

10

IS

100

---

./1
........

JaE(o~) =1 2.0 Vohs

SO

f- VB£(oII) = 0 Vohs~

-

!
~

~

~

iii

"-

VaE(olfl = 5.0 Vohs

e;
'"'"

r--"'\.

Q

'5
50 f:::=PI = 5
r--TC= 75°C
r - - VCC = 20 Vo~s
20
15
3.0
5.0
7.0
1.6
2.0
IC. COLLECTOR CURRENT (AMPS)

IS

I

1000

VaE(oII) = 2.0 Voh~-

===

FIGURE 12 - CROSSOVER TIME

...

Q

...

LXI

.......

1500

I

'"
'"
5

IS

"I.
:'1--..,
-Pf=IO
VaE(o") = S.O Vohs
S
_TC = 7SoC
20
;£=
-Vcc = 20 VollS
I'
1
1 111
10
1.5
2.0
3.0
S.O
7.0
10
IC. COLLECTOR CURRENT (AMPS)

I
I

'-.-.

............

FIGURE 11 - CROSSOVER TIME

1500
1000

~
i= 300
iii 200
e; 100

10

VaE(o") = 0 Vo~

~

'"

f - - . iJl =5
f - - TC =75°C
20 f - - VCC =20 VollS
10

!

~

"-

50

500

3D
5.0
7.0
IC. COLLECTOR CURRENT (AMPS)

FIGURE 10 - COLLECTOR CURRENT FALL TIME

1'-.. "VaE(oII) =5.0 Voh.

Ii 100
a

s

20

1000
VaE(o") =0 Voh.

'"

PI = 10
TC = 7SOC
VCC = 20 VolI~-=-====

100

15

10

500

t;

-- =- VaE(o") = 5.0 VollI

0.05
~

l300

Q

~ 2.0 Vo~.

700
500 f---

FIGURE 9 - COLLECTOR CURRENT FALL TIME

:i

VaE(o")

1000

I;;

1000

!

VaE(o") ~ 0 VOl••)'

3000 f--- 2000
I----

500
300
200
100

-

..........

VB£(o") = 0 Volts
A
",

r--

r--...

I
.1

VaE(oII) = 2.0 Volts

SO ~PI=10
-TC _75°C
VaE(olfl = 5.0 Voh.-VCC = 20 Volls
20
IS
3.0
S.B
7.0
10
IS
I.S
2.0
IC. COLLECTOR CURRENT (AMPS)

I

10

15

1-377

2N6836

III

FIGURE 13 -INDUCTIVE SWITCHING MEASUREMENTS

'C~

/ ' V-

./

trv~tU·~_th-

I- f--'",

'C ..........

"'::'CEIPk)

l'-j
90% VCElpk) I1\ 90% 'Clpk)

I

I---J r'c-'

V
VeE

10% VCElpk)

'e-

-

-

90% 'el

--\- -"-

-

--

-

iE

:;;
!!,

...

-',,-

"-

ia

f-IBI ; 2,0 Amps

.,/

~

--

/'"

:i
~

10"', ......
hlC
IC pk

-- -- -- -

--

FIGURE 14 - PEAK REVERSE BASE CURRENT
10

/'

ffi

~
~

-

...... 1---""

/"

V

-

~

.......... I--'""'

....-

..--

IBI ; 1.0 Amps

IC; 10 Amps _
TC; 25°C

f--

I

o

o

1.0
2,0
3,0
4,0
VBElolf). REVERSE BASE VOLTAGE IVOLTS)

5.0

TIME

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 16 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
20

1...
a;

2,0

'-' 0,50

i

I ms
de

1,0

g§

==

~:-

005

BONDING WIRE LIMIT
- THERMAL LIMIT
SECONO BREAKDOWN LIMIT

\

'"
!;j

1\

S
'"
::5

.

"
"

10 f--fll;;> 4
f - - TC" 100°C
VBElolf); 0 V

6,0

I

~

§

2,0

0,02
5,0

10

\

0

::l

:l
0,10

l~

14

::::>

0

.!d>

18

'-'

ETC; 25°C

'"t;
S

20

!!,

50

::::>

iE
:E

10 "s

10

in

FIGURE 16 - MAXIMUM REVERSE BIAS
SAFE OPERATING AREA

20
30
50 70 100
200 300
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTS)

450

100

" I

1\

\

\
\
\

VBElolf) ; I to 5 V
I

"\.
.......

150
200 250
350
450
600 700 850
VCElpk). PEAK COLLECTOA-EMITTER VOLTAGE IVOLTS)

SAFE OPERATING AREA INFORMATION
FORWARD BIAS

the power that can be handled to values less than the
limitations imposed by second breakdown.

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; I.e .. the transistor must not be subjected to
greater dissipation than the curves indicate,
The data of Figure 15 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 17.
At high case temperatures. thermal limitations will reduce

REVERSE BIAS
For inductive loads. high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 16
gives the R8S0A characteristics.

1-378

2N6836

FIGURE 17 - THERMAL RESPONSE
1.0

R9JCItI- rill R9JC
R9JC - 1.IJOC,w
TJlpkl" TC - PlpklR9JCIII

II.

.....
~

....1""0.1

1.0

IK

100

10.0

I, TIME Ims)

FIGURE 18 - POWER DERATING
100

~ t:--...

""

...........
........
Therma~
Dera11ng --tI

o

o

40

"-...II

""-

Second Breakdown _
Der.1mg

,-

r--....
r-...

...... r-......,

f"-.,

"

"'

120
80
TC.CASE TEMPERATURE I'CI

160

'" "

200

TA8LE 1 - RESISTIVE LOAD SWITCHING

lei and

tr

OV

=-35J.J
A

50

Vee = 250 Vde
RL = 2511
le= IOAde
IB= 1.0Ade

OV~+V_
-

~V

l"'~
1
~
r
'Ie

RL

Vee

·Tektronix
P-6042 or
Equivalent

Vee = 250
RL =2511
le=10Ade

-=-

IB1=1.0Ade
RB1=1011
182 = 2.0 Ade
RB2 = 1.6 n
For VBEloff) = 5.0 V RB2 = 0 n

-Note: Adjust -V to obtain desired VRF'tnff\ at POint A

1-379

2N6836

TABLE 2 - INDUCTIVE LOAD SWITCHING

20

o

IO~F

=-35lf

A

50

-V

~1C(pk)

IC~

'---

~k)
A

VCE~

(0lf--fiH---[

~

VCE(pk)' VCE(clamp)
T 1 = LcOlI (lCpk)
VCC

50

T 1 adJusted to obtaon IC(pk)

V(BR)CEO

Inductive Switching

L'10mH

L'200~H

L'200~H

RB2'~

VCC' 20 Volts

RB2' 0
VCC' 20 Volts
RB 1 selected for desored IB 1

RB2' 0
VCC' 20 Volts
RB1 selected for desored IB1

*Tektronix
P-6042 or
Equivalent

Scope· Tektronix
7403 or
EqUivalent

Note: AdJust -V to obtain desored VBE(off) at Point A.

RBSOA

TYPICAL INDUCTIVE SWITCHING WAVEFORMS
Ifi. Ie
IC(pk) , 10 Amps
IB1 ' 1.0 Amp
VBE(off) , 5.0 Volts
VCE(pk) , 400 Volts
TC' 25°C
Time Base =
100 nslcm

lC(pk) , 10 Amps
IB1 , 1.0 Amp
VBE(off) , 5.0 Volts
VCE(pk) , 400 Volts
TC' 25°C
Time Base;::
20 nslcm

1-380

®

2N6837
MOTOROLA

l1li

Designer's Data Sheet
20 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCH MODE III SERIES
ULTRA-FAST NPN SILICON POWER TRANSISTORS

450 VOLTS

250WATIS
This transistor is designed for high-voltage, high-speed, power
switching in inductive circuits where fall time is critical. They are
particularly suited for line-operated switch mode applications.
!Ieolgn.". DetIIlor

Typical Applications:

"w_ Ca.... Conditions

• Switching Regulators

The Designers Data Sheet permits the design
of most circuits entirely from the information
presented. Limit data - representing device
characteristics boundaries - are given to facil~
;tate "worst case" design.

• Inverters
• Motor Controls
• Deflection Circuits
• Fast Turn-Off Times
30 ns Inductive Fall Time - 75·C (Typ)
40 ns Inductive Crossover Time - 75·C (Typ)
800 ns Inductive Storage Time - 75·C (Typ)
• Operating Temperature Range -65 to +200·C
• 1000c Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching TImes with Inductive Loads
Saturation Voltages
Leakage Currents

!FA
1- B=l

fC

----t
L~
K

SEATING
PLANE

Symbol

Max

Unit

Collector-Emitter Voltage'

VCEOlsus)

450

Vdc

Collector-Emitter Voltage'

VCEV

850

Vdc

Emitter Sase Voltage'

VEB

6.0

Vdc

Collector Current -

IC
ICM

20
30

Adc

IS
IBM

15
20

Adc

Po

250
143
1.43

Watts

TJ, Tstg

-65 to +200

·C

Symbol

Max

G
H
J

K

.Rating

Continuous'
Peak (1)

Continuous'
Peak (1)

Total Power Dissipation @ TC
@TC
Derate above 250C

=
=

25·C·
100·C

Operating and Storage Junction'
Temperature Range

wrc

"THERMAL CHARACTERISTICS
Chancterlstlc
Thermal Resistance, Junction to Case'
Maximum Lead Temperature for Soldering'
Purposes: 'Ia" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5.0
-Indicate JEDEC Registered Data

i

1:E

MAXIMUM RATINGS

Base Current -

I

R8JC

0.7

Unit
.C/W

TL

275

·C

r---

F--

-J-

Q~
H ~
I

DIM
A

8
C
0
E
F

Q

R

mI. Duty Cycle '" 10%.

!

0

V,

~

,

~i

/'

MILLIMETERS
MIN
MAX

38.35
19.30
6.35
1.45

-

29.90
10.61
5.21
16.64
11.18
3.84
24.89

39.31
21.08
1.62
1.60
3.43
30.40
11.18.
5.12
11.15
12.19
4.09
26.61

~

t

lG

INCHES
MIN
MAX

1.510
0.160
0.250
0.051

-

1.117
0.420
0.205
0.655
0.440
0.151
0.980

1.550
0.830
0.300
0.063
0.135
1.191
0.440
0.225
0.615
0.480
0.161
1.050

CASE 197-01
TO-204AE (Type) Modified TO-3

1-381

1

R

'/

I

2N6837

111

ELECTRICAL CHARACTERISTICS ITC = 25"<: unl!'ss otherwise noted).

I

Chal'llCterlstic

Symbol

Min

Typ

.Max

Unit

VCEOlsus)

450"

-

-

Vde

-

-

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage ITable 2)
IIc = 100 mA. IB = 0)
Collector Cutoff Current
IVCEV = B50 Vde, VBEloff)
IVCEV = B50 Vde, VBEloff)
Collector Cutoff Current
IVCE = 850 Vde, RBE

ICEV

= 1.5-Yde)
= 1.5 Vde, TC = l00'C)

= 50 0, TC = l00'C)

Emitter Cutoff Current
IVEB = 6.0 Vde, IC = 0)

ICER

-

lEBO

-

mAde
0.25"
1.5"
2.5

mAde

1.0"

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 15'

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS 111
Collector-Emitter Saturation Voltage
IIc = 10 Ade, IB = 1.2 Ade)
IIc = 15 Ade, IB = 2.0 Ade)
IIc = 15 Ade, IB = 2.0 Ade, Tc = l00'C)

VCElsat)

Base-Emitter Saturation Voltage
IIc = 15 Ade, IB = 2.0 Ade)
IIc = 16 Ade, IB = 2.0 Ade, Tc

VSElsat)

= l00'C)

DC Current Gain
IIc
IIc

-

-

1.5
3.0"
3.0"

-

1.5"
1.5

-

30"

Vde

-

hFE

= 15 Ade, VCE = 5.0 Vde)
= 20 Ade, VCE = 5.0 Vde)

Vde

-

7.5"
5.0

-

tr

10"

-

75"

MHz

Cob

100"

-

500"

pF

ns

-

DYNAMIC CHARACTERISTICS 121
Current Gain - Bandwidth Product
IVCE = 10 Vde, IC = 0.25 Ade, ftest
Output Capacitance
IVCB = 10 Vde, IE

= 10 MHzl

= 0, ftest = 1.0 kHzl

SWITCHING CHARACTERISTICS
.....stIve Load (Table 11
Delay TIme
Rise TIme
Storage Time
Fall TIme
Storage TIme

td
(lC = 15 Ade,
VCC = 250 Vde,
IBI = 2.0 Ade,
PW = 30 p.S,
Duty Cycle .. 2.0%1

(lB2
RB2

= 4.0 Ade,
= 1.60)

tr
ts
tf

IVBEloff)

= 5.0 Vde)

Fall Time

ts
tf·

-

20

100"

200

500"

1200

2700"

200

350"

BO

-

BOO

2700"

50

200'

90

250"

650

Inductive Load (Table 21
Storage TIme
Fall TIme
Crossover TIme
Storage TIme
Fall TIme

tsv
IIC = 15 Ade,
IBI = 2.0 Ade,
VBEloff) = 5.0 Vde,
VCE(pk) = 400 Vde)

ITC

= 100'C)

tfi

Ie
tov
(rC

= 150'C)

tfi

Crossover Time

Ie

(1) Pul.. Teat: PW - 300 psJ, Duty Cycle'" 2.0%.
(2)
= IhlEl!test
.
"Indicates JEDEC Registered Limit

tr

1-382

-

1050
70
120

-

ns

2N6837

TYPICAL STATIC CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION
3.0

IIII

Ol--f-

z

;;;

'"
:l§

au

TJ = 25°C

0
I-"

I-f--

~

~J~rlhooc

-UIJs5oC

~

- ---

,

10

' ; 7.0

30
03

5

10
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT lAMPS)

20

~

30

~

J1 L'-.

\

li-

0.5 0.7

"-

I

1.0
2.0
.0
5.0 7.0
Is. BASE CURRENT lAMPS)

FIGURE 4 - BASE-EMITTER VOLTAGE

.0

2

"

3. 0

.1
.0

h

VI

1.0
.7

.7

.2f---~1 = 10
I==- TJ = 1000C

;;..

.....-.:~

.1.1
..I-

TJ = 250C

V '1l1 = 5.0
.11==111= 10
~o.o 7
0.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 70
Ie. COLLECTOR CURRENT lAMPS)

- ,....

TJ = 25°C

./

.3

-

.9
.8

~

i

IC= 20A

IC - 10

0.3

~
~ 2.0

~~

\

IC-l~A\

\

3 IC=5.0A\

FIGURE 3 - COLLECTOR-EMITTER SATURATION REGION

~

\

9

I
05 07

TJ = 25°C

.1

VCE = 5.0 V

5.0

I II

7

.5=-TJ = 1000C
.4
1 I I

I

~i""

""

~~
TJ = 75'C

11,= 10

.3

o.2

20

10

0.2 0.3

FIGURE 5 - COLLECTOR CUTOFF REGION

0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT lAMPS)

20

FIGURE 6 - CAPACITANCE

104

/

,

/

3

TJ" 150·e
2

125 QC

....

./

-"

.s,

..,z

~ 1000

I

~

75·C

I---- r-REVERSE

FORWARD

' VCE "250V=
10- I

-02

·04
·02
VBE. BASE EMITTER VOLTAGE IVDLTSI

Cob

u

1.

25·C

-u

ti~

10K

,

/

loo·e

I

./

1

·06

1-383

TJ = 25°C
190

0.1

1.0

10
100
VR. REVERSE VOLTAGE IVOLTS)

1000

2N6837

TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 7 - STORAGE TIME

7. 0

FIGURE 8 - STORAGE TIME

-

VBE(off)~lts

5. 0

--l

I

I

0

I

VBE;ott) = 2.0 Vokl
0

-r

VBE(ott) = 5.0 Vokl

I-c-~

Pf= 5
TJ .. 75°C

0.5 0
10

20

5. 0

0

IL

1.0

FIGURE 9 - COLLECTOR CURRENT FALL TIME

~

~E(ott)

J

""'"\

01--VBE(ott) = 0 Volts

~

110
B

70

~

50
Pf= 5
301- TJ = 75°C
!( I- Vee = 20 Volts

:st;
8

1

!

= 5.0 Vokl

,20

3.0

2.0

ii 30

."

VBE(off) ; 2.0 Vok"""-:::: ~Iott) ; 5.0 Volts

o~

!o:
l!!

-'I
o~

;:: 20

.so

"\

--

50

o

t;
:;

30 lif= 10
20 TJ = 75°C
Vee = 20 Volts

8

I

1o

2.0

20

3.0

5.0
7.0
10
IC. COLLECTOR CURRENT lAMPS)

.1

1000
70 0

VBElolf) = 5.0 Volts
VBE(off)

:! 50

= 2.0 Voks

"\.

:IE 30o VBE(ott); 2.0 Voks
.1
:;;; 20Ot--..

~

'\.
"\.

I

"\.

::--..

~

\

~

~ 10 O,=-VBEloff)

5 70

70

01= lif= 5
TJ =. 75°C
Ol-VCC = 20 Voks
20
15
2.0
3.0
4.0
5.0
7.08.0
10
Ie COLLECTOR CURRENT (AMPS)

15

FIGURE 12 - CROSSOVER TIME
1500

......

/

7

a:

a:

110
5

~

100I=VBE(ott);

~

5.0
7.0
10
Ie. COLLECTOR CURRENT (AMPS)

' , -' .!.'

30
o
20

:t

."-

VBElott) = 0 VoI..__

20

50

~

FIGURE" - CROSSOVER TIME
1500
1000
70
'i 500

_LUl

30
5.0
7.0
10
Ie. COLLECTOR CURRENT lAMPS)

1000
70 0

I
2.0

VBElott); 5.0 Vok.= ~

FIGURE 10 - COLLECTOR CURRENT FALL TIME

700
VBE(ott) = 2.0 VokS-

-

2.0 Volts

7

20

30

VBEI~tt) ;

f---- Pf = 10
Sf---- TJ = 75°C

1000

!

V

F=-

0

3.0
5.0
7.0
10
Ie. COLLECTOR CURRENT (AMPS)

150 0

~

VBE(ott) = 0 Vo~

0

-

I

0

I

7. 0

.so

50

!

1-384

VBE(ott) ; 5.0 Voks

.......

-"-

r-....
I'.

L

L

~

I--'"

iii; 10
TJ; 75°C
Vee; 20 ,VOkl

,0
20

~

.1

.0

3.0

5.0
7.0
10
.Ie COLLECTOR CURRENT lAMPS)

15

20

2N6837

FIGURE 14 - REVERSE BASE CURRENT

FIGURE 13 - INDUCTlVE SWITCHING MEASUREMENTS

~CEIPkl r--

IC!--,

/'

VI

./"

.......

~

VCE

:"

'Ia-

III',"......

10IIi VCElpkl

-

ICPk

_Ial

V

.0

V'"

r-;:~

V

-

f.--

'.0 V

-

I

I...-- ~=1.5IA"""

'j

I

o

1.0
VBElo"~

TIME

2.0

1
I

IC = 15 AIIIjII
TJ = 25°C ' -

.0
0

I

I 1

./

'V ....... ~

-- --\-, -- -- ..--- - "'--

. / ~81 =3.0~1IIjII

.0

'", Iflflt '10 -1-',.1-1 f-"--' r-

V

L...-+-

.0
.0

-VCEIPkIJ 1\-IClpll

r-- r--'"

IC/

0

3.0

I

4.0

I

5.0

REVERSE BASE EMITTER VOLTAGE IVOLTSI

GUARANTEED SAFE OPERATING AREA UMITS
FIGURE 1& - MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

FIGURE 15 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
3
20

,

10 p.
3

0
f"'
:E 7.0

3

~ 5.0

0-

~

0
Te = 25°e
de
0
'"co .7.5
fij
.. -Bonding Wire limit
::l .3
8 2 .. -- - Thermal limit
1--Second Breakdown limit
Jil 0
0.0 7
0.0 5
0.0 3
5.0 7.0 10
20
50 70

1.0 .,;;-.

25
TJ <;; 100°C

"-

B

20-~;;'4.0

\
\\

\~

I

100

200

~-

10

........

VsFO-

450

200

VVsEloIfl = 1.0 10 5.0 V

l ' <'
--t--~,
\

400

600

800

1000

VCE. COUECTOR-EMITTER VOLTAGE IVOLTSI

VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS}

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC - VCE limits of the transistor that must be observed
for reliable operation; i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 15 is based on TC = 25°C; TJ(pk)
is variable depending on power leve}. Second breakdown pulse limits are valid for duty cycles to 100/0 but
must be derated when TC;;.25°C. Second breakdown
limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure
15 may be found at any case temperature by using the
appropriate curve on Figure 18TJ(pk) may be calculated from the data in Figure 17.
At high case temperatures, thermal limitations will re-

1-385

duce the power that can be handled to values less than
the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base-to-emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value
of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load
line shaping, etc. The safe level for these devices is
specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during
reverse biased turn-off. This rating is verified under
clamped conditions so that the device is never subjected
to an avalanche mode. Figure 16 gives the RBSOA
characteristics.

2N6837

FIGURE 17 - THERMAL RESPONSE
1.0

1== j:::

0 - G.5

L

t-- t1

0 'D.2
r-- I- 0 ~'O.I

--

0.01

:,...

RUChl- rl'I RBJC
RBJC • D.1.C/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME A, 'I
TJlpki - TC =Plpkl RBJCI'I
Plpkl

(;...

tJUl

Singl.PuIIl

i-""

0.1

IIII

r

IIII

I

-r~~

DUTY CYCLE. 0 =11/'2
1000

100

10

1.0

10000

,. TIME IMSI

FIGURE 18 - POWER DERATING
100

~ t-....

..........

"" ""

llO
'"t;
Q

Second a,l.kdown

...... ~

~htrm.~

.

:tOO

Oer'1Ing~ I'..

z
;:
c

::; 40
Q

'"~
f

Derating

f ' ......
t-......
"-

r---

r---..

.......
20

0

40

120
80
TC. CASE TEMPERATURE ,oCI

160

"""

'"

200

TABLE 1 - RESISTIVE LOAD SWITCHING
tctand t,

OV-,

+Vdc - 11 Vdc

r

--35VU

+
RBI
A

50

-v
Vee = 260Vdc

~

Yin

OV

IIV

~

RL = 160·
= 15Adc

Ie

IB = 2.0Adc

tr<16na

vee .:.

'Tektronix
P-6042 or
Equivalent

Vee

= 250
RL = 160
Ie = 15 Adc

IBI = 2.0 Adc
IB2 = 4.0Adc
For VBE(off) = 5.0 v

r

RBI = 7.50
RB2=1.60
RB2 = on

"Note: Adjust - V to obtain desired VBE(off) at Point A.

1-386

2N6837

I

TABLE 2 -

~

INDucnVE LOAD SWITCHING

I

0.02",F

+

o
=-35lf

A

50

l~:

+ ....- -.......- - 0 (

500

~ IC(pk)

-V

IC~

~

At 01--HH---£
Tl _Leoil (Cpk)
VCC
T1 adjusted to obtain IC(pk)

V(BRICEO

L = 10 mH
RB2 = ""
VCC = 20 Volts
"Tektronix
P-6042 or
Equivalent

50

Inductive Switching
L=200",H
RB2 = 0
VCC = 20 Volts
RBl selected for desired IB1

RBSOA

L = 2OO,.H
RB2 = 0
Vee = 20 Volts
RBl selected for desired IBl

Scope - Tektronix
7403 or
Equivalent

Note: Adjust - V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

IC(pk) = 15 A
IBl = 2.0A
VBE(off) = 5.0 Volts
VCE(pk) = 400 Volts
TC = 25"<:
TIme Base = 200
nstem

IC(pkl = 15 A
IBl = 2.0 A
VBE(offl = 5.0 Volts
VCE(pk) = 400 Volts
TC = 25"<:
TIme Base = 200
"stem

1-387

IU204
IU205

®

MOTOROLA

2.5 AMPERE

NPNSILICON
POWER TRANSISTORS

HORIZONTAL DEFLECTIONTRANSISTOR

1300 AND 1600 VOLTS
36 WATTS

· .. specifically designed for use in large screen color deflection
circuits.

Design..'s Om for
"Worst Case" Conditions

• Collector-Emitter Voltage -- VCEX = 1300 Vdc -- BU204
1500 Vdc -- BU205

The Designers Data Sheet per·
mits the design of most circuits
entirely from the information presented. Limit data -- representing
device characteristics boundaries -are given to facil itate "worst case"
design.

• Glassivated Base-Collector Junction
• Switching Times with Inductive Loads -tf = 0.65 /.IS (Typ) @ IC = 2A

~

L~rt=BC

to

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Ba.. Voltage
Collector Current - Continuous
-Peak (1)
Be.. Current - Peak (1)
Total Po_r DllSlpation Iii> TC • 25°C
Iii>TC m 900C
Derate above 250 C
Operetlng and Storage Junction
Temperature Range

Symbol

BU204

VCEOlsuI)
VCEX
VEB
IC
ICM
IBM
Po

600
1300

I BU206
I 700
I

Unit
Vd.
Vd.
Vd.
Adc

1500

5.0
2.5

Thermal Resistanco, Junction to

ea..

-+
K

. I

BASE
EMITTER
,....,I--",""-+-==,_:COLLECTOR
Q

3
Ad.
Wattl

2.5

36
10

OA

wl"c
°c

-65 to +,115

TJ, Tstg

NOTES
1 DIMENSIONS a AND v ARE DATUMS
2
IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE O.

C:fJ

I • 11,13(0005)@) I T Iv@) I

THERMAL CHARACTERISTICS
Charecterlo1lc

D

..

FOR LEADS

I

Symbol

I

Max

I

R8JC

I

2.5

(1) Pul.. Test: Pul .. Width = 5 ms, Duty Cyclo< 10%.

1-388

I

Unit

I °C/W

I • 11,1310,OO~I,@)T I v@) I.@)I
4. DIMENSIONS AND TOLERANCES PER

ANSIY14.5,1973

BU204, BU205

ELECTRICAL CHARACTERISTICS ITC = 250 unle.. otherwise noted.)
OFF CHARACTERISTICS II)
Collector-Emitter Sustaining Voltage
(lC = l00mAdc.IB =0)
Collector Cutoff Current .
IVCE = 1300Vdc, VBE =0)
IVCE = 1500 Vdc, VBE = 0)
Emitter Base Voltage
(IE = 10 mA,lc = 0)

BU204
BU205

Min

Typ

MIIx

Unit

600
700

-

-

Vdc

-

-

1.0
1.0

VEBO

5.0

-

-

Vdc

VCElsad

-

-

5.0

Vdc

VBElsad

-

-

1.5

Vdc

VCEOlsus)
ICES

BU204
BU205

mAdc

-

ON CHARACTERISTICS II)
Collector-Emitter Saturation Voltage
(lC = 2.0 Adc,lB = 1.0 Adc)
Basa Emitter Sat_ion Voltage
(lc - 2.0 Adc,IB = 1.0 Ade)
Sacond Braekdown Collector Current with Base
Forward Biased

See Figure 14

IS/B

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (1)
(lC =0.1 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitanca
IVCB = 10 Vdc,lE = 0, f = j.o MHzl

'T

-

4.0

-

MHz

Cob

-

50

-

pF

SWITCHING CHARACTERISTICS
Fall Time
(lC = 2.0 Adc, 1111 = 1.0 Adc, LII = 25 "H) ISee Figure 1)
11) Pulse Test: Pulse Width ..; 300 Ill, Duty Cycle - 2".

FIGURE I - TEST CIRCUIT
+80V

Common

2500
5.0W
5.0kCO....

5WIBAdj.

Capacitor v.lu_ in "F
, ..istors are" watt

200
0.1/100 V

5.0W

.47

,
2.2 k

I
I

L

I
I

MR91B
(1500 V
Selec...U
101150 V

WIdth

Adi

+

-=

10
5.0W

IC
0.15 A
1.5
2.0

I.B k

DRIVER TRANSFORMER IT1)
Motorola part number

26D68782A-O~1/4"

IlII'I1ln.,. "E" iron

core. Primary Inducunce- 39 mHo Secondary Inductenca- 22 mH,
Leak.... I nduetance with prfmery Ihortad - 2.0 "H. Primary 260
turns #28 AWG anMMtI wire. Secondary 17 turns, #22 AWG
enamel wire.

1-389

L
4.25mH

2.18mH
1.6mH

C
.000"F
.000"F
.ooa"F

Common

+126 V

BU204, BU205

BASE DRIVE: The Key to Performance

111

By now, the concept of controlling the shape of the
turn-off base current is widely' accepted and applied in
horizontal deflection design. The problem stems from the
fact that good saturation of the output device, prior to
turn-off, must be assured. This is accomplished by providing more than enough IB1 to satisfy the lowest gain
output device h FEat the end of scan ICM. Worst case
component variations and maximum high voltage loading
must also be taken into account.
If the base of the output transistor is driven by a very
low impedance source, the turn-off base current will reverse very quickly" shown in Figure 2. This results in
rapid, but only partial, collector turn·off, because excess
carriers become trapped in the high resistivity collector
and the transistor is still conductive. This is a high dissipa·
tion mode, since the collector voltage is rising very rapidly.
The problem is overcome by I!dding inductance to the
base circuit to slow the base current reversal as shown in
Figure 3, thus allowing excess carrier recombination in the
collector to occur while the base current is still flowing.
Choosing the right LB is usually done empirically, since
the equivalent circuit is complex, and since there are
several important variables (lCM, IB1, and hFE at 'CM).
One method is to plot fall time as a function of LB, at the
desired conditions, for several devices within the h F E
specification. A more informative method is to plot power
dissipation versus IB1 for a range of values of LB as shown

in Figures 4 and 5. This shows the pardmeter that really
matters, dissipation, whether caused by switching or by
saturation. The negative slope of these curves at the left
(low IB1) is caused by saturation losses. The positive
slope portion at higher 'Bl. and low values of LB is due to
switching losses as described above. Note that for very low
LB a very narrow optimum is obtained. This occurs when
IBI hFE = ICM, and therefore wO!lld be acceptable only
for the "typical" device with constant 'CM. As LB is in·
creased, the curves become broader and flatter above the
IBI hFE = ICM point as the turn-off "tails" are brought
under control. EventuallY, if LB is raised too far, the
dissipation all across the curve will rise, due to poor
initiation of switching rather than tailing. Plotting this
type of curve family for devices of different hFE, essentially moves the curves to the left or right according to the
relation 'Bl hFE = constant. It then becomes obvious
that, for a specified 'CM, an LB can be chosen which will
give low dissipation over a range of hFE andlor 'Bl. The
only remaining decision is to pick IB1 high enough to
accommodate the lowest hFE part specified. Figure B
gives values recommended for LB and 'Bl for this device
over a wide range of 'CM. These values were chosen from
a large number of curves like Figure 4 and Figure 5.
Neither LB nor IBlare absolutely critical, as can be seen
from the examples shown, and values of Figure B are provided for guidance only.

TEST CIRCUIT WAVEFORMS
FIGURE 2

FIGURE 3

18

Ie
(tlmo)

(tlmo)

TEST CIRCUIT OPTIMIZATION
Once the required transistor operating current Is determined,
fixed circuit valu.s maY be selected from the table. Factory tftt·
ing Is performed by reading the current meter only. since the
input power i. proportlone' to current. No adiustment of the
test apparatus Is required.

The test circuit may be used to evaluate devlc•• 'n the conventional manner. I.•.• to me••ur. fall time, Itorage time, and
Hturetlon voltage. However, thl' circuit wa. designed to evaluate
devices by • • Imple criterion, power supply Input. Excel.lve
power Input can be caused by • v8rl81:Y of problems, but It I, the
dllllpation In the transistor that " of fundamental Importance.

1-390

BU204, BU205

FIGURE 5 - OPTIMIZING DRIVE @ IC 1.5 A

FIGURE 4 - OPTIMIZING DRIVE @ IC = 0.75 A

5.5

4.0

\

1\\ \
\\. ""'\ r"-. ~

~ 3.5

i

\

~
~ 3.0

-

,,~

...

~

"""""II

!;

~ 2.5

2.0

LBpH
4 .............

V

~ '20""

02
IBI. BASE CURRENT (AMP)

0.1

FIGURE 6 - OPTIMIZING ORIVE

'r-..
""''"

r' "O

'"
~

...~

7.0

!;

~ 6.0

5.0
0.4

---

'"

~

@

D.3

0.2

0.4

./

o.a

1.0

FIGURE 7 - SWITCHING BEHAVIOR versus
TEMPERATURE
10

2.0

.........
.........

r-....

r--- -

~

t'-.....

" r-- '"-t-....

0.6

ICM

w

'"~

Z

1.0

1.0

..,,- V

:t

4

0.5

....-

o
o

12

-:-- .....

20

......~

./"

40

..,...,.V

oV
1.0

~

. /V

'I

~~

&0

BO

100

1211

6.0
1&0

140

FIGURE 9 - SWITCHING BEHAVIOR versus ICM

2.0

sj 1.5
w
../" ..,""
23

,.,.....

1

.........

9.D

TC. CASE TEMPERATURE (oCl

20

0

.-

'!.- /

~

20

0.8
lal. aASE CURRENT (AMP)

= 1.75 A.IB = 0.85 A.la = 13jd1

1.5

LBpH

............. 1-..

0.5

......

0.&

0.4

IC = 2.0 A

5

5

./

i'-.. '" t:><

4

V

lUI. aASE CURRENT IAIII'I

FIGURE 8 - OPTIMUM DRIVE CONDITIONS

2.0

...... ~ .............

\

~

-7

3.5

o

9.0

LBpH

.,..-

K

1.5
2.0
ICM. COLLECTOR CURRENT (AMP)

t3~

"-...,'0g ~ 1.0 V
.,i~- '-5!l

o

Is

./

,

If

1-391

L-4

o
0.5

8

"'"

//

0.5

2.5

1

1.0

1.5
2.0
ICM. COLLECTOR CURRENT (AMP)

2.0
2.5

j

BU204, BU205

FIGURE 10 - THERMAL RESPONSE
I.0

:i.
~_
wO
%w

...

~!:::!
~

o. 7 f::D - 0.5
o.5
O.3f:= 0.2

~~ 01

iO"


\ 1.5A

..
t-

~
cc

\

\

"- .......

'-'
0

-

0.2

"" "-

0.6 0.7 0.8 0.91.0

0.05

10
5.0

1.6

~

I

~ 1. 2

c:~
>

VBE(1It)0 IcJlB • 2.0
O. B

,;

25°C
l00"C

.~
0.4

VCE(1It)0 IcJlB • 2.0

~

L
~

o.Z5 0.3

0.4

1.0
0.5
0.7
IC. COLLECTOR CURRENT (AMPI

2.0

0.1
0.2
0.5
1.0
IC. COLLECTOR CURRENT (AMP)

~

0.1

8 0.05 RTe"

/,......,. /

m,

8

0.01
"';0.005

f-2.0

3.0

~ Z.o
"" 1.0
~ 0.5
g 0.2

100°C

25°C

o

7

~

FIGURE 14·MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FIGURE 13 - "ON" VOLTAGES

w

~Io...

5.0

2.0
1.6
0.03

2.0

co

......

3.0

\..

. . . . r--~

0.5
0.3
0.4
18. BASE CURRENT (AMP)

ID

~

1\

\.

VC~'5~OV

-..

'-'

\
\.

O.S
0
0.1

_25°C

=> 7.0

\

\

1.5
1.0

:;(

1

co

\2.0A

\

\

-

z

1\

\

3.5

I I

TJ-l000C

20

TJ' 25°C

4.0

'¥

.
~

3D

4.5

~

:E

FIGURE 12 - DC CURRENT GAIN

5.0

2.5

1-392

O.ooZ
0.001
Z.O

. BU205
5.0

10
20
50
100
200
500
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

1000

2000

®

BU207
BU208

MOTOROLA

De~ig'lleI'S

III

Data Sheet

5 AMPERE
NPN SILICON
POWER TRANSISTORS
1300 AND 1500 VOLTS

HORIZONTAL DEFLECTION TRANSISTOR
· .. specifically designed for use in large screen color deflection
circuits.

Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per·
mits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facil itate "worst case"
design.

•

Coliector·Emitter Voltage VCEX = 1300 Vdc - BU207
1500 Vdc - BU208

•

Collector-Emitter Sustaining Voltage VCEO(sus) = 600 Vdc - BU207
700 Vdc - BU208

•

Switching Times with Inductive Loads, tf = 0.4 Ils (Typ) @
IC=4.5A

•

Optimum Drive Condition Curves

•

Glass Base-Collector Junction

*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Collector-Emitter Voltage
Emitter Base Voltage

Collector Current - Continuous

Peak
Ba.. Current - Peak (1)

(1)

Total Power Dissipation@Tc "" 95°C
Derate above 95°C
Operating and Storage Junction
Temperature Range

Symbol
VCEOlsus)
VCEX
VEB
IC
ICM
IBM
Po
TJ, Tstg

BU207 [ BU20B

Unit

I

Vdc
Vdc
Vdc
Adc

600
1300

I

700
1500

5
5
7.5

4

Adc

12.5
0.625
-65 to +115

Watts

W/oC

OC

Maximum Lead Temperature for Soldering
Purposes: 1/8" from Ca.. for 5 Saconds

Q

NOTES.
1. DIMENSIONS QANO V ARE DATUMS.
2.
IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE O'

OJ

.1113fO.OO5)e I TIve I
I • t 1.13f....'eT I vel Del
t

FOR LEADS

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

BASE
EMiTtER
--+~~-+-=-=--;CO LLECTO R

Symbol
ROJC

TL

Max

Unit

1.6
275

OC/W

4. DIMENSIONS AND TOLERANCES PER
ANSI V14.5,1973
INCHES
MIN MAX
1.550
0.83
0.300
0.043

OC

(1) Pulse Test: Pulse Width - 5 ms, Duty Cycle <: 10%.

O. 5

7

1.187 SC
0.430BSC
0.2158SC

0.665BSC
0.440 0.480
0150
.165
1

0.210
0.165

CASEHtS

1-393

BU207, BU208

ELECTRICAL CHARACTERISTICS (TC

= 25 0 unl... otherwise noted.)

I

Characteristic

OJ

Min

Symbol

Typ

Max

-

-

Unit

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage

(lc

VCEO(sus)
SU207
SU208

= 100 mAde, IS = 0)

Collector Cutoff Current
(VCE = 1300 Vde, VSE = 0)
(VCE = 1500 Vde, VSE = 0)

600
700
ICES

Emitter Sase Voltage
(IE = 10 mA, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 4.5 Ade, VCE

= 5 Vde)

VESO

5.0

hFE

2.26

-

Collector-Emitter Saturation Voltage
(lC = 4.5 Ade, IS = 2 Ade)

VCE(sat)

Sase Emitter Saturation Voltage

VSE(sat)

(lC

= 4.5 Ade, IS

= 2 Adc)

Second Breakdown Collector Current with Base

-

-

-

SU207
SU208

ISlb

Vde

mAde
1.0
1.0

-

Vde

-

-

-

-

5

Vde

-

1.5

Vde

Sao Figure 14

Forward· Biased
DYNAMIC CHARACTERISTICS
Current~Gain - Bandwidth Product
(lC = 0.1 Ade, VCE = 5.0 Vde, 'test

= 1 MHz)

Output Capacitance

(VCS

= 10 Vde,

IE

=0,' =0.1

'T

-

4.0

-

MHz

Cob

-

125

-

pF

MHz)

(lC = 4.5 Ade, IS = 1.8 Ade,
LS = 10 /lH, see Figure 1)

(1) Pulse Test: Pulse Width

= 300 "s, Duty Cvele"

2%.

FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
Com
2 k/5W

+60V

820

5W
100

IC

I.
MR918
(Selected

·'OJ.'F +
25 V

3

C

1500 VI
10 "F
150 V

5W

Pul .. Width Ad)

+

60% Duty Cycle
~

10 Sl

5W
Com +125 V

DRIVER TRANSFORMER (T1)

IC

I.

A

mH

3.5

0.87

0.013

4.5

0.67

0.017

Motorola part number 25068782A-05·1/4" laminata "e" iron ear•.
Prlmarv Inductance - 39 mHo Secondary Inductance - 0.22 mH,
Leakage Inductance With primary ,horted - 2.0 ",H. Primary 260
turns, #28 AWG enamel wir •. Secondary 17 turns, #22 AWG
enamel wlr •.

1-394

BU207, BU208

BASE DRIVE: The Key to Performance
Sy now, the concept of controlling the shape of the
turn-off base current is widely accepted and applied in
horizontal deflection design. The problem stems from
the fact that good saturation of the output device, prior
to turn-off, must be assured. This is accomplished by
providing more than enough IS1 to satisfy the lowest gain
output device hFE at the end of scan ICM- Worst-case
component variations and maximum high voltage loading
must also be taken into account.
If the base of the output transistor is driven by a very
low impedance source, the turn-off base current will reverse very quickly as shown in Figure 2. This results in
rapid, but only partial, collector turn-off, because excess
carriers become trapped in the high resistivity collector
and the transistor is still conductive. This is a high dissipation mode, since the collector voltage is rising very rapidly.
The problem is overcome by adding inductance to the
base circuit to slow the base current reversal as shown in
Figure 3, thus allowing excess carrier recombination in the
collector to occur while the base current is still flowing.
Choosing the right LS is usually done empirically, since
the equivalent circuit is complex, and since there are
several important variables 0CM, IS1' and hFE at ICM)'
One method is to plot fall time as a function of LS' at the
desired conditions, for several devices within the hFE
specification. A more informative method is to plot power
dissipation versus IS 1 for a range of values of LS as shown

in Figures 4 and 5. This shows the parameter that really
matters, dissipation, whether caused by switching or by
saturation. The negative slope of these curves at the left
(low IS 1 ) is caused by saturation losses. The positive slope
portion at higher IS1' and low values of LS is due to
switching losses as described above. Note that for very low
LS a very narrow optimum is obtained. This occurs when
IS1 hFE = ICM' and therefore would be acceptable only
for the "typical" device with constant ICM' As LS is increased, the curves become broader and flatter above the
IS1 hFE = ICM point as the turn-off "tails" are brought
under control. Eventually, if LS is raised too far, the
dissipation all across the curve will rise, due to poor
initiation of switching rather than tailing. Plotting this
type of curve family for devices of different hFE' essentially moves the curves to the left or right according to the
relation IS1 hFE = constant. It then becomes obvious
that, for a specified ICM' an LS can be chosen which will
give low dissipation over a range of hFE and/or 'S1' The
only remaining decision is to pick 'B1 high enough to
accommodate the lowest hFE ·part specified. Figure S
gives values recommended for LS and IS 1 for this device
over a wide range of 'CM' These values were chosen from
a large number of curves like Figure 4 and Figure 5.
Neither LS nor IS1 are absolutely critical, as can be seen
from the examples shown, and values of Figure S are provided for guidance only.

TEST CIRCUIT WAVEFORMS
FIGURE 2

FIGURE 3

(time)

(time)

TEST CIRCUIT OPTIMIZATION
Once the required transistor operating current Is determined,

The test circuit may be used to evaluate devices in the conventional manner, I.e., to measur. fall time, storage time, and
saturation voltage. However. this circuit was designed to evaluate
devices by a simple criterion, power supplV input. Excessive
power input can be caused by 8 variew of problems, but It Is the
dissipation In the transistor that is of fundamental Imponanca.

fixed circuit value. may be selected from the table. Factory testing Is performed by reading the currant meter onlY. since the
input power Is proportlona' to current. No adjustment of the
test apparatus Is required.

1-395

III

BU207, BU208

OJ

FIGURE 4 - OPTIMIZING DRIVE@ IC

~

3.5 A

FIGURE 5 - OPTIMIZING DRIVE. IC - 4.5 A
16

3

,\

l\
\\
,\\\

1

.\\\ ~
16

0

9

LBpH

. \\~~-........ ;z'
4~

o

0.5

/'

l~

-

/

r\.

\'\' ;-... -..
~)

/"

LBpH

12

'\

2--

.L

~'" -.../

:..--

4

-

12

1.5

o

0.5

1.5
IBI. BASE CURRENT (AMP)

IBI. BASE CURRENT (AMP)

FIGURE 6 - SWITCHING BEHAVIOR versus
TEMPERATURE
ICM ~ 3.5 A.IB· 1.5 A. LB = 14 I'H

FIGURE 7 - SWITCHING BEHAVIOR venus
TEMPERATURE
ICM = 4.5A.IB= 1.75A. LB- 81tH
1

.",-

1.5

9.5

]:

IS /

1

0.5

Z
o
o

./

/'

>=
~
~

1

100

80

60

120

140

L

/""
7

If

/
o.5
./

8

40

/'

,..

If

V
7.5

:t

0

8
20

Iy

5

~

/

V

I.

6

160

20

40

TC. CASE TEMPERATURE (DC)

60

80

100

120

140

FIG~RE 8 - OPTIMUM DRIVE CONDITIONS

FIGURE 9 - SWITCHING BEHAVIOR ve,sus ICM .
1

20

i

~

...

III
a:
a:

::>

'"

-

,.-- 'I;,'"

5'~K

1.

I'-...

1

!

~

NOMINAL
15

1

I-:-..
ttOlt/lttA,/:"---

o. 5

o

3

3.5

'-

LB

.............

4

160

TC. CASE TEMPERATURE (DC)

-...

4.5

rF

iz
c
c:

' 1.5

...'"
'>="'

.3
~

~

9

............
............. ~Olt/lttA,£_

7

Is

~ ........

1

r-----..l'-o.

~ :t,..
~
o. 5
~

---

8

NOMINAL

If

6

~5
4

3

o

. 5

0

3.5

4.5

ICM. COLLECTOR CURRENT lAMP)

ICM. COLLECTOR CURRENT (AMP)

1-396

2

..

BU207, BU208

FIGURE 10 - THERMAL RESPONSE

I;::~IIIIII'IIIIIIIII~-III·I-I
~:::~
~ ~ UUl
W~

!.l-

n

III

-

i= 0.21=1;:+~;j:Umt=~=1dO~.05:u;~-:q~:a~~mt=tt P(pkl
n
..... -~
~ V
-j.!l..\2--1

ffi

"~rvrl.
u, '.

...

J;.~2
.01

02

~.~~~:O-tll~2

~:~ APPROPRIATE 0 CURVEI II II, FOR~8JC,ltI,VALVE " ••--+-11-+++
111 ++1

I

O.lm

IIIII

R8JC -1.6 DCIW Max
0 CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME Attl
TJ(pkl- TC'PlpkI Z8JC(tll
I I 111111 I
IITT

p

in n.
~ n,

l1li

.1

0.

0.2

2

5

10

20

50

100

200

500

100

t, TIME (mSI

,

FIGURE 11 - COLLECTOR SATURATION REGION

~ 2.B
o

~

\

FIGURE 12 - OC CURRENT GAIN

20

...

2.4

VCE' 5 V
TJ"IOODC

I

w

~
s:

2

ffi

1.6 - -\IC'2A -

!

1.2

t::

,;,

r-

1\

0.8

8

0.4

ij

0

...

4.5 A

3.5A 4A

3A

\
_\

o

~

'"

_\

-~

\

"-

\.
~

0.5

""

~

3
2,0
0.05 007 0.1

0.7

0.2 0.3
05 0.7
I
IC. COLLECTOR CURRENT IAMPI

FIGURE 14-MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FIGURE 13 - "ON" VOLTAGES

1.4

I
I
I

1.2
1
0.8

o

0.6

;
>

--

VSEI ..tl @IClis • 2

1--1---

...-

0.4
0.2

::;; ~

f-lOODC
'I

.7 /

25'C

I
0.2

0.3

'""S

t~

-

0.5 0.7

~

.'-

20'=

1~~-=

200-

TC<950 C
BONDING WIRE LIMIT

.1

'"

THERMAL LIMIT
SECOND BREAKDOWN LIMIT

500

.~~

DUTY CYCLE'" 1%

3

0.02

~~~

~O.01

de

BU2D1

0.005

IC. COLLECTOR CURRENT IAMPI

10

.....

05

~ 0.2

~

Vf1Iii'@ IC;IS '12
0.1

f-

r.t.'-II!I~A~;
1 leM (MAX))

ffi

100.t

o
0.05

0
5

TJ'25',:/

o

\.

\.

\.

lB. BASE CURRENT IAMPI

~
w

.....

7

\

0.3

~

~

25 DC

\

\!U~08

0.002
0.001

I

10

20

50

100

200

500

VeE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-397

1000

2000

BU208D

®

MOTOROLA

IIJ.--_ _ _-. ,. . . . ,
5 AMPERES

NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR
WITH INTEGRATED DAMPER DIODE

NPN $ILlCON
POWER TRANSISTORS

... specifically designed for use in large screen color deflection

circuits
1500 VOLTS
60 WATTS
•

VCES= 1500 V;
VCEO(sus) = 700 V (min)

•

Low saturation:
VeE(sat) = 1.0 V (max) @ Ie = 4.5 Adc

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

700

Vdc

Collector-Emitter Voltage (RBE = 0)

VCES

1500

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current -

IC
ICM

5.0
7.5

Adc

Base Current - Peak

IB

3.5

Adc

Total Device Dissipation TC = 25°C
Derate above 25°C

Po

60
0.666

Watts
W/oC

TJ. Tstg

-6510 115

°C

Rating

Continuous

- Peak

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

NOTES:
1. DIMENSIONS 0 AND V ARE DATUMS.
2.
IS SEATING PLANE AND DATUM.

FIGURE 1 - POWER DERATING

.0

f\

8

3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q:

CASE COLLEtrO.

I .11.1310.0051@) I T Iv@) I
FOR LEADS:

\

1 • 11.1310.005l@)T I v@) I 0@)1
4. DIMENSIONS AND TOLERANCES PER
ANSIY14.5,1913.

\

1\

.6

m

STYLE 1
PIN 1. BASE
2. EMITTER

DIM
A

\

•
C

.4

o

\.

E
F
G
H

\

2

J

I\.

a

25

50

75

100

\. 125

150

175

200

Tc. CASE TEMPERATURE (OC)

CASE 1-05
TO-204AA (Type)
(Formerly TO-3)

1-398

BU208D

ElECTRICAL CHARACTERISTICS (TC" 25°C unless otherwise noted)

I

Characteristic

I

Symbol

Min

Max

Unit

VCEO(sus)

700

-

Vdc

ICES

-

1.0

mAde

IESO

-

300

mAde

VF

-

2.0

Vdc

VCE(sat)

-

1.0

Vdc

VBE(sat)

-

1.5

Vdc

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC" 100 mAde, IS" 0, L" 25 mH, Vcl amp " BOO V)
Collector Cutoff Current

(VCE = 1500 Vdc, VSE = 0)
Emitter Cutoff Current

(VES = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
Diode Forward Voltage
(IF" 4.0 AI
Collector-Emitter Saturation Voltage

(IC = 4.5 Adc, IS = 2.0 Adc)
Base-Emitter Saturation Voltage

(IC" 4.5 Adc, IS " 2.0 Adc)
SWITCHING CHARACTERISTICS (Inductive Load)
(IC (end) = 4.5 Adc, VCC" 140 Vdc,
IS (end) = I.B A, LC = 0.9 mH, LS = 10 I'H)
(1) Pulse Test. PW = 300 IJ-S. Duty Cycle ~ 3%.

1-399

BU40I

®

1U407

MOTOROLA

7.0 AMPERE
NPNSIUCON
POWER TRANSISTORS
60 WATTS
150 and 200 VOLTS

NPN POWER TRANSISTORS
These devices are high voltage, high speed transistors for horizontal deflection output stages of TV's and CRT's.
• High Voltage:
VCEV = 330 or 400 V
• Fast Switching Speed:
tf = 750 ns (maxi
• Low Saturation Voltage:
VCE(satl = 1.0 V (maxi @ 5.0 A
• Packaged in Compact JEDEC TO-220AB

r-o
-'I-

MAXIMUM RATINGS
Rating

Symbol

BU406

Unit

Collector-Emitter Voltage

VCEO

200

150

Vdc

Collector-Emitter Voltage

VCEV

400

330

Vdc

Collector-Base Voltage

VCBO

400

330

Vdc

Emitter Base Voltage

VEBO

6.0

Vdc

IC

7.0
10
15

Adc

Base Current

IB

4.0

Adc

Total Device Dissipation, TC = 25"<:
Derate above TC = 25"<:

Po

60
0.48

Watts
W/"C

TJ,TStg

-65 to 150

"<:

Collector Current - Continuous
Peak Repetitive
Peak (10 msl

Operating and Storage
Junction Temperature Range

THERMAL CHARACTERISTICS
Symbol

Max.

Unit

Thermal Resistance, Junction to Case

RIlJC

2.08

OC/W

Thermal Resistance, Junction to Ambient

RIlJA

70

OC/W

TL

275

"<:

Characterlltlc

L88d Temperature for Soldering Purposes:
118" from Case for 5.0 Seconds

A

.

,I

tu

lUI J~r I i
K

BU

!

l00"'C

-

25'C

0:

~
!z

"-

I

'"""""'-

Vee = 5.0V
30

~

,,~

~

~

g
~ 20

de
1,0

<..>

0.1

.Y

- ----TC

Banding Wire limit
Thermal Limit

Second Breakdown Umit

25'C

~U~, ;::::::;:;;

BU
10
0.1

0.2

0.3 0.5

0.7

1.0

2.0

10

5.0 7.0

10.0

Ie COIllCTOR CURRENT lAMPS)

1-401

2.0

3.0

5.0 7.0 10
20 30
50 70
VCE, COIllCTOR - EMlmR VOLTAGE IVOLTS)

100

=
200

BU806
BU807

®

MOTOROLA

8.0 AMPERE

DARLINGTON
NPN POWER
TRANSISTORS

NPN DARLINGTON POWER TRANSISTORS

60 WATTS
150 and 200 VOLTS

These Darlington transistors are high voltage, high speed devices
for horizontal deflection circuits in TV's and CRT's.
•

High Voltage: VCEV = 330 or 400 V

•

Fast Switching Speed:
tc = 1.0 p's (max)

•

Low Saturation Voltage:
VCE(sat) = 1.5 V (max)

•

Packaged in JEDEC TO-220AB

•

----.,I
I

I

I
I
I
I

I
I

Damper Diode VF is specified.
VF = 2.0 V (max)

____ JI

MAXIMUM RATINGS
Symbol

BUB06

BUB07

Unit

Collector-Emitter Voltage

VCEO

200

150

Vdc

Collector-Emitter Voltage

VCEV

400

330

Vdc

Collector-Base Voltage

VCBO

400

330

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

IC

8.0
15

Adc
Adc

Rating

Collector Current - Continuous

-Peak
Emitter-Collector Diode Current

IF

10

Base Current

18

2.0

Adc

Po

60
0.48

Watts
W/oC

-65 to 150

°c

Total Device Dissipation, TC = 25°C
Derate above TC = 25°C
Operating and Storage Junction
Temperature Range

TJ,
Tstg

ANSIY145M,1982

5 CONTftOlLlNGDIMENSION INCH

r--

~
A
B
C

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance. Junction to Case

R9JC

2.08

°C/W

Thermal Resistance, Junction to Ambient

R9JA

70

°C/W

lead Temperature for Soldering Purposes,

TL

275

°c

Characteristic

NOTES
I DIMENSIDNHAPPLIESTOAULEADS
2 DIMENSION L APPUES TO LEADS 1
AND 3
3 DIMENSION Z DEFINES A ZONE WHERE
ALL 8DDYAND LEAD IRREGULARITIES
ARE ALLOWED
4 OIMENSIOMNG AND TOLERANCING PER

1/8" from Case for 5.0 Seconds

0
F
G
H
J
K
L
N
Q

R

S
T
U
V

Z

~

fW ~

MAX
~
0190

~

965
406
064
361
2.41
279
0.36
1270
114
483
254
2.04
1.14
5.97
0.00
1.14

10.29
4.82
089
373
267
393
0.56
1427
139
5.33
304
2.79
1.39
6.48
1.27

-

2.03

-

0620

~~
.
0147
0095
0110
0014
0500
0045
0.190
0100
0.080
0.045
0.235
0.000
0.045

0105
0155
0022
0562
0.055
0.210
0.120
0.110
0.055
0.255
0.050

-

O.OBO

CASE 221A-02
TO-2Z0AB

1-402

-

BU806,BU807

III

=25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TC

Characteristic
OFF CHARACTERISTICS

ICES

-

-

ICEV

-

-

100

I'Ade

lEBO

-

-

3.0

mAde

Collector-Emitter Saturation Voltage
(IC =5 0 Ade. 'B =50 mAde)

VCE(sat)

-

-

15

Vde

Base-Emitter Saturation Voltage
(IC =5.0 Ade. 'B =50 mAde)

VBE(sat)

-

-

24

Vde

VF

-

-

2.0

Vde

ton

-

035

-

I'S

ts

-

0.55

-

I'S

tf

-

0.20

-

I's

te

-

0.40

1.0

I's

BU806
BU807

Collector-Emitter Sustaining Voltage (1)
(lc = 100 mAde. IB =0)
Collector Cutoff Current
(VCE =Rated VCBO. VBE

=0)

Collector Cutoff Current
(VCE =Rated VCEV. VBE(off)

200
150

VCEO(sus)

=6.0 Vde)

Emitter Cutoff Current
(VEB =6.0 Vde. IC =0)

-

Vde

100

I'Ade

ON CHARACTERISTICS (1)

Emitter-Collector Diode Forward Voltage
(IF =4.0 Ade)

SWITCHING CHARACTERISTICS
Turn-On Time

(Resistive Load. VCC = 100 Vde.
IC =5.0 Ade. 'Bl =50 mAde.
IB2 =500 mAde)

Storage Time
Fall Time

Crossover Time
(IC =5.0 Ade. IBI =50 mAde. VBE(off) =4.0 Vde.
Velamp =200 Vde. L =500 I'H)
(1) Pulse Test Pulse Width ~ 300

1J,S,

Duty Cvcle

~

1%

FIGURE 2 - SAFE OPERATING AREA (FBSOA)

FIGURE 1 - DC CURRENT GAIN
20

600

40

z 300
<1
0

i

'"

.Oms
1.0ms

,r

~OI'S

/'

20

de

V

B
g 10 0

- ----r-

/V

~

~

is0

Banding Wire Limit
Thermal Limit

I"

Second Breakdown limit

.....

0

0
0

"-,

10 non-repetitive

=5 0 V
or- VCE
TJ =25°C

-)-

0.2

0.3

0.5 0.7

1.0

2.0

30

50 70

10

TC

10

Ie. COLLECTOR CURRENT (AMPS)

BUBO)

25"C

60

100

veE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-403

-

50 ms
BUB06
200 300

-

D40Cl
D40C2
D40C4
D40C5

MOTOROLA

DUOWATT
NPN SILICON
DARLINGTON AMPLIFIER
TRANSISTORS

NPN SILICON DARLINGTON
AMPLIFIER TRANSISTORS
· .. designed for amplifier and driver applications where high gain is
an essential requirement, low power lamp and relay drivers and power
drivers for high-current applications such as voltage regulators.
•

High DC Current Gain hFE =40,000 (Min) @ IC =200 mAdc - D40C2, 5

• Collector· Emitter Breakdown Voltage BVCEO = 40 Vdc (Min) @ IC = 10 mAdc - D40C4, 5
•

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 500 mAdc
Tab forming and TO-ES 'aad forming available on
special requal't.

• Duowatt Package 2 Watts Free Air Dissipation @ TA = 250 C

a

MAXIMUM RATINGS
Symbol

D40Cl.2

I

D40C4,5

Unit

Collector-Emitter Voltage

VCEO

30

I

40

Vdc

Collector-Emitter Voltage

VCES

30

I

40

Vdc

Emitter-Base Voltage

VEBO

13

Vdc

IC

0.5
1.0

Adc

Rating

Collector Current - Continuous
Peak (I)

Base Current - Continuous

IB

100

mAde

Total Power Dissipation @TA = 2SoC
Derate above 25°C (2)

Po

1.67
13.3

Watts
mW/oC

Total Power Dissipation@Tc=2SoC
Derate above 25°C
Operating and Storage Junction
Temperature Ranee
Solder Temperature, 1/16" from Case

Po

6.25
50

Watts
mW/oC

TJ. Tstg

-55 to +150

°c

-

260

°c

for 10 Seconds

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

R6JA

I

R6JC

I
I
I

Max

Unit

75

°CIW

20

I

CIW

(1) Pulse Width" 25 ms, Duty Cycle" 50%.

(2) The actual power dissipation capability of Duowatt transistors are 2 W @TA

= 2SoC.

STYLE 1:
PIN 1. EMITTER
2. BASE
3. CO LLECTO R
4. COLLECTOR

o

MILLIMETERS
DIM MIN MAX
A 21.84 22.35
8
9.91 10.41
C
4.39 4.65
D
0.58 0.74
F
3.56 4.06
G
2.41
2.67
H
1.70 1.96
J
0.48 0.66
K 12.19 12.95
L
1.65 2.03
N
9.91 10.16
Q
3.56 3.81
R
1.0
1.7
T
7.87 9.14
TO-202AC
CAse 306-04

1-404

0.3611

D40C1,D40C2,D40C4,D40C5

l1li
ELECTRICAL CHARACTERISTICS ITA: 2S o C unles. otherwise noted.!

I

I

Charocteriotic

Symbol

Min

Max

30
40

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I)
(lC: 10 mAde, VBE : 0)

Vde

BVCEO
D40Cl,2
D40C4,S

Collector Cutoff Current
(VCB = RatedVCES, IE: 0, TJ: IS0 0 C)

ICBO

-

20

I'Ade

Collector Cutoff Current

ICES

-

0.5

I'Ade

lEBO

-

100

nAde

10,000
40,000

60,000
-

(VCE

s

Rated VCES, VBE : 0)

Emitter Cutoff Current

NEB: 13 Vde, IC = 0)
ON CHARACTERISTICS (1)
Current Gain

tiC

=

200 mAde, VCE

-

hFE

=5.0 Vde)

D40Cl, 4
D40C2,5

Collector-Emitter Saturation Voltage
tiC = 500 mAde, IB = 0.5 mAde)

VCE(sat)

-

1.5

Vde

Base-Emitter Saturation Voltage
tiC = 500 mAde, IB = 0.5 mAde)

VBE(.at)

-

2.0

Vde

Ccb

-

10

pF

hie

1.0

-

-

DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vde,lE

= 0, f :

1.0 MHz)

High Frequency Current Gain

tiC

= 20 mA, VCE = 5 Vde, I = 100 MHz)

Input Impedance

tiC

=20 mA, VCE :

hie

50

-

Ohms

5 Vdc, I = 1 kHz)

(1 I Pulse Test: Pulse Width.; 300 "', Duty Cycle'; 2.0%.

TYPICAL CHARACTERISTICS
FIGURE 1 - ACTIVE-REGION SAFE-OPERATING AREA

i

~~

\OO~s

1

O.5

'"o

0.2

..

o. 1

- 0.05
0,02
0.5

transistor: average junction temperatura and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curvet indicate.
The data of Figure 1 is based on T J(pkl = 150OC; TC is variable
depending on conditions. Second breakdown pulse limits are valid
lor duty cycles to 10% provided T J(pkl",1500 C. T J(pk) may be
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less man the Iimitations imposed by second braa kdown.

de

~

8~

There are two limitations on the power handling ability of a

1m.

de
TA' 250 e

I

11111

Te,' 25 0 e

'\.

il ... .J

TJ = lSOoe
Bonding Wire Limit
Thonnol Limit,Single Pulse, Te' 250 e
Second Brnkdown Limit

I

I I 111111

I\:

I

10
20
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

50

1-405

D40C1,D40C2,D40C4,D40C5

TYPICAL CHARACTERISTICS (continued)

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 - "ON" VOLTAGES

300 k
Vce=5.0V

200 k

-

TJ = 2~a~

I

~'. 6

;;: 70 k
50 k

~1.4

25aC

~3O k

10 k
7.Ok
5.0k

VCE(mt) Olclla = 500

o.a

3.ok
20

30

50

70

100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT (mA)

20

III
I II

...

~

~ 1.6
200 rnA

~1. 2

500 rnA

,

g

0.8

~

11111

S-0.30 r... -0.3540 ......
~
~

5.0

500 1.0 k 2.0 k 5.0 k

-0.45
20

~.

BVB for VaE

-65aC to 25aC

110

i-O·

10 20
50 100 200
lB. BASE CURRENT "'A)

-

U

g; -0.25

i'-

~125aC

25 aC to 125aC

w

II III
1.0 2.0

I JJ.I.l

....

8-0.20

1.0 A

Ic=50mA

> 0.4
0.5

25aC 10 125aC

'BVC for VCE(saU

13
~E'-O.15

~

2.0k

Hili

'Appli" for Iclla" hFE/2

~ -0.5
ffi -0.10

~2.0

8

+0.5

3-

>

:;;

100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT (mA)

70

FIGURE 5 - TEMPERATURE COEFFICIENT

u

TJ = 25 ac

o

50

30

FIGURE 4 - COLLECTOR SATURATION REGION
Ui 2. 4
~

i-'"

IIIII

0.6

2.0 k

....

~

VaE(an)" VC~ "5~ V

~1. 2
o
>
>1.0

-55aC

o

~

~

I

~ZO k

u

....

ralE(r110Ictl~ "~

o

!'"

~

I.a

TJ = 125aC

100 k

z

2.0

I

30

50

70

11111
IIIII

I

100
200 300
500 700 1.0 k
IC.COLLECTOR CURRENT (mA)

2.Qk

FIGURE 6 - THERMAL RESPONSE
1.0
0.7
0·0.5
0.5

~~

0.3

~~ 0.2
...

'"

5~

0.1

-0:05

Single Pulse

~~ 0.05

0.02
0.01

-

-

b;;jjiii

~

0.1

!~ 0.01
~50.D3

....

:~

- - z,JCIt!= rh) R,JC
RBJC = 20aCNI Max

illJl --

Singl,Pul.

z,JA(t1" rlt! R'JA
RBJA = 75.CNI Ma.

P(pk)

~O.

I
0.01 0.02

oCURVES APPLY FDRPOWER

-t~j

0.01

.1'"

Duty Cycfe, 0 = 11112
0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20
50
I,TIME(ms)

1-406

100

200

500

1.0 k

2.Q k

PUlSE TRAIN SHOWN
READ TIME AT II
TJ(pk) -TC" p(PkI R,JC,tI
5.Ok 10k

20k

10k 1• •

NPN

®

0400
PNP

MOTOROI.A

0410

DUOWATT
COMPLEMENTARY SILICON ANNULAR
AMPLIFIER TRANSISTORS

COMPLEMENTARY SILICON
AMPLIFIER TRANSISTORS

. . . designed for general·purpose, medium·voltage, medium power
amplifier and driver applications; series, shunt and switching regu·
lators, and low and high frequency inverters and converters.

•

Duowatt Package - 2 Watts Free Air Dissipation @ T A = 25 0 C
Tab forming and TO-5 lead forming available on
special request.

c;:;$-'

MAXIMUM RATINGS

Rating

Symbol

0

0

0

~

~

~

~

a:· ~:- ~~.

VCEO

30

45

Collector-Emitter Voltage

VCES

45

60

Emitter-Base Voltage

VEBO

Collector-Emitter Voltage

Collector Current

Continuous

Operating and Storage Junction
Temperature Range

Solder Temperature, 1/16" from Case
for 10 Seconds

~g

Unit

75

Vdc

90

Vdc

.

5.0

Vdc

1.0
Adc
2.01 0 0 _ mAde

IC

Peak (11

Base Current
Total Power Dissipation @TA = 25°C
Derate above 25°C (2)
Total Power Dissipation @ T C - 2SoC
Derate above 2SoC

;0"".-~

-~
o~

60
75

'B

Po

1.67
13.3

Watts
mW/oC

Po

6.25
50

mW/oC

TJ, T stg

~

Watts

-55 to +150 ---...

°c
°c

260

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

ReJA

75

Thermal Resistance, Junction to Case

ReJC

20

°CIW
°C/W

Characteristic

(11 Pulse Test: Pulse Width .. 300 ~s.
(21 The actual power disSipation capability of Duowatt tranSIstors are 2 W @ T A -= 25°C.

STYLE \.

'" ,,,,m.

2. BASE
3. COLLECTOR
4. COLLECTOR

0:l'-iji
jK

oj~~~G

L

RrN-td
Lr--:f...l

1~-=t'J

MILLIMETERS
DIM MIN MAX
A 21.84 22.35
8
9.91 10.41
439
4.65
C
0
0.&11 074
4.06
3.56
F
241
2.67
G
H
1.70
196
0.48
0.66
J
K
1219 1295
L
165
2.03
N
9.91 10.16
n 3.56 3.81
.0
.75
R
.8
9;14
T

INCHES
MIN MAX
0.860 O.BBO
0.390 0410
0.173 0.183
0023 0.029
0140 0.160
0.095 0105
0.067 0.077
0.019 0.026
0.480 0.510
0.065 0.080
0390 0.400
0140 0.150
0.042 0.069
0.310 0.360

TO-202AC
CASE 306·04

1-407

1

a~

:t

D40D,NPN,D41D,PNP

ELECTRICAL CHARACTERISTICS (TA ~ 250 C unless otherwise noted.)

I

I

Unit

Min

Max

30
45
60
75

-

ICES

-

100

nAdc

lEBO

-

100

nAdc

0400/0410-1.4,7,10,13
0400/0410-2,5,8,11,14

50
120

150
360

04001.4,5,7,8,10,11
04101.4.5,7,8,10,11
0400/0410-2

10
10
20

-

-

0.5
1.0
1.0

-

1.5

Vde

75

375

MHz

-

12
18

Charactaristic

Symbol

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage
(lc

~

10 mAde, IB

~

Vde

BVCEO

0)

04001,2/04101,2
.0400/0410-4,5
0400/0410-7.a
0400/0410-10,11,13,14

Collector Cutoff Current
(VCE ~ Rated VCES)
Emitter Cutoff Current
(VEB ~ 5.0 Vdel
ON CHARACTERISTICS (1)

DC Current Gain

(lc ~ 1.0 Ade, VCE

= 2.0 Vde)

Collector-Emitter Saturation Voltage

500 mAde,lB

~

Vde

0400/0410-1,2.4,5
040'0;7,8,10,11,13,14
04107,8,10,11,13,14

Base-Emitter Saturation Voltage
~

-

VCE(s.tl

(lC ~ 500 mAde,lB ~ 50 mAde)

(lC

-

hFE

(lC ~ 100 mAde, VCE ~ 2.0 Vde)

VBE(s."

50 mAde)

DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
(lC ~ 20 mA, VCE~ 10 Vde, I ~ 20 MHz)

IT

Collector-Base Capacitance

pF

Ceb

(VCB ~ 20 Vdc, IE ~ 0, I ~ 1 MHz)
(1) Pulse Test: Pulse Width'; 300

~s,

0400 series
0410 series

Outy Cycle'; 2.0%.

TYPICAL CHARACTERISTICS

FIGURE 2 - CAPACITANCES

FIGURE 1 - CURRENT·GAIN-BANDWIDTH PRODUCT

00

vJJ

00

00

TJ =25°C

~

.,.,.

200

~Jo~lse"
;;;.;..
...J ..... I-"'

V

-lUL

1---"1-"' ~\J,Ues

--"0410 saries
--D40Dseries

10o~-

............

f"-.

0
0

'"
~

0
0_

10

3

10

20

30

50

10

100

200

300

500

2
0.1

-

-..

0
1
5- -

50

TJ - 25°C

C.b

0.2

.....

~

_~Cb, ~

-

Applies for Rated VeRO

I I 1111
0.5

10

VR, REVERSE VOLTAGE (VOLTS)

IC' COLLECTOR CURRENT (mA)

1-408

20

50

100

D40D,NPN,D41D,PNP

TYPICAL CHARACTERISTICS (continued)

400

200

z

~

'"

~

.......

z

~

c

~

60

Z.

~ 100

a

v~~ ° 110 V

.......

V

40

'"-r--.,"

zslc

:c
'"0-

K

80

u

III

TJ,12S0C

zoo

~l50J

§~ 100
_

300

~} ~ moc

;;:

0410 series

FIGURE 3 - DC CURRENT GAIN

0400 series

~

70

~

50

I--""

-

-55°C

1.-0--

VCEol.0V
20
1.0

50

20

50
100
10
20
IC, COLLECTOR CURRENT ImAI

500

200

30
1.0

10k

5.0

2.0

10

50

20

100

200

500 1000

Ic, COLLECTOR CURRENT ImAI

FIGURE 4 - "ON" VOLTAGE
1. 0

1.0

l
I II

TJ o 2socll!""

IIII'TJ ° 25 C

Ijlll
IVBE!"ti@ IC/IB:.!

o. 8

~

].....V

-111

w

~

2:. O.6

'"~

>-

:>

c5

'"
o. 4
>

>

VCEI"tl@IC/IB' 10
1.0

20

5.0

O. 4

o. 2

-

o. 2

~ I-

.... 1-'

VBE!onl@VCE ° 1.0 V

w

'"~

o

VBElsati@"ICIIB! "
°"
10

in

J.I+-VBE!onl@VCE ° 1.0 V

~ o. 61--

j....1-'

o.8

~

o

10
20
50
100
200
IC, COLLECTOR CURRENT !mAI

500

10

1.0 k

5.0

2.0

I--

.....

t - VCEI..ti@IC/IB' 10

10
20
50
tOO
IC, COLLECTOR CURRENT ImAI

zoo

500 1.0 k

FIGURE 5 - COLLECTOR SATURATION REGION

~

0

JLPc

o

.

2:
w

~

..

~

o.8

~
o

1.0

O. B

'"

!:;

~ O.6

~ O.6

~

~

~

;;;

8

:!l

>

o. z

Ic·l0mA SOmA

250 rnA 500 rnA

LOA

~ O.4

~ O. 4
o

~_

TJ '" 25°C

'~"

LOA

~·tn- N:nf

IttI-H+Il

0 1111
0.05 0.1

0_2

0.5

~~
~

j

1Tii

1.0 2.0
5.0 10 20
IB, BASE CURRENT !mA)

50 100 200

o.Z

8

:!l

>
500

0
0.05 0.1

,...
0_2

0.5 1.0 Z.O

5.0

10

ZO

IB, BASE CURRENT !mAI

1-409

50 100 200

500

D40D, NPN, D41D,PNP

TYPICAL CHARACTERISTICS (continued)

lIB

FIGURE 6 - THERMAL RESPONSE
10
O.
7 D" 0 5
05

~~
~~
~~

w~

iOw

.....

l
.... ~

0.3 I-

~:i 0.2

.....

~jji

~~ 007

Single Pulse

~.~ 0,05

~~ 0,03

1\

002

-

-

01

F 0.05

01

ffiJ1 --0bJ

SmglePulse

1
001

ZOJAIII" rIll ROJA
ReJA' 750CIW Max

Plpkl

0.02
0.01

,1'"

001

ZOJe(l1 • r(ll ROJC
ReJC' 200CIW Max

Duly Cycle, 0

002

005

01

05

02

10

50

20

10

20

50

100

200

500

=

10k

DCURVESAPPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpkl . TC " Plpki ROJCIII

q/t2

20k

5.0k 10k

20k

SDk lOOk

t, TIME (ms)

FIGURE 7 - ACTIVE·REGION SAFE·OPERATING AREA
040D series

0410 series

2.0k

1

i
t-

'"
o

~

S
~

k

1-,

0:

k

:5.

700

'"

700
500

....

300

TC

t-

~

25°C

TA'250C

de

....

200

II

100
70
501=-

~8

1\

TJ-150oC
- BONDING WIRElIMIT
THERMAL LIMIT, SINGLE PULSE
SECOND BREAKDOWN LIMIT
3.0
5.0 7.0 10
20
30
50
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

70

I

' ...

TC-250C ...

"500~

\..

''4.

II

O~..I=_Bonding Wire limit

0 0

2,0

de

de

TA'25OC

10O F F TJ

f----- (Appltes Below Rated VCEol

30
o
2
1.0

"

300
200

'"
o

" 10Li-

1.01'Qs

500

::

I......

de .... ,

:".

lOOps

\.10ms

1.0 k

-

Second Breakdown Limit
(Applies Below Rated VCEO~

20
1.0

100

-Thermal limit. Single Putse. T C - 25 0 C

2.0

3.0

5.0

7.0

10

20

30

50

70

100

VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits_of the transistor

The data of Figure 7 is based on T J( k) = 150°C; TC is variable
depending on conditions. Second breardown pulse limits are valid

that must be observed for reliable operation; i.e., the transistor

calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

for duty cvcles to 10% provided TJ(pklo;;; ISOoC. TJ(pk)

must not be subjected to greater dissipation than the curves Indicate.

--"

FIGURE 8 - POWER DERATING
1.0

~

"-

~ O.B

'"to

:

~

r---......

Thermal Deratmg " '

O. 6

'"z

"" "'"

~ 0.4

c

~

--I'--

r-

t'...

~

'"~

Second Bre~kdown Derating

0.2

o
o

"-,.
r--...

20

40

60

BO

100

TC, CASE TEMPERATURE (OCI

1-410

120

140

160

mav be

NPN

®

PNP

040El 041El
040E5 041E5
040E7 041E7

MOTOROLA

DUOWATT
COMPLEMENTARY SILICON ANNULAR
AMPLIFIER TRANSISTORS

COMPLEMENTARY SILICON
AMPLIFIER TRANSISTORS

... designed for general·purpose, medium·voltage, medium power
amplifier and driver applications; series, shunt and switching regu·
lators, and low and high frequency inverters and converters .

• Duowatt Package - 2 Watts Free Air Dissipation @ T A = 25 0 C

Tab forming and TO-5 lead forming available on
special raquest.

a-tr'

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage
Collector Current

Continuous

Peak (1)
Base Current
Total Power Dissipation @ TA = 2SoC

Derate above 2SoC (21
Total Power Dissipation @TC - 2SoC
Derate above 2SoC
Operating and Storage Junction
Temperature Range

Symbol D4OI41E1ID40141E51D40/41E7
Unit
Vdc
80
30
60
VCEO
Vdc
40
70
VCES
L 90
Vdc
5.0VE80
2
Adc
IC
3
0.5
mAde
18
Watts
1.67Po
1 3 . 3 - mW/oC
Watts
8
Po
mW/oC
64
TJ,Tstg .......- 55to+150°c

I
I

I

-

.

Solder Temperature, 1/16" from Case

for 10 Seconds

260-

°c

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Ambient
Thermal Aesistance. Junction to Case

NOTES

I

Symbol

I

Max

I

Unit

I
I

ROJA
ROJC

I
I

75

I
I

°CIW
°C/VI

15.6

1. Pulse Test: Pulse Width" 300 1'5.
2. The actual power dissipation capability of Duowatt transistors are 2 W@
TA = 25°C.

1

~'"'" ", ," tin
II iI
2 BASE
3 COllECTOR
4 COllECTOR

K

D-

-

L

f-.-G

R r-N::t........:l

~~-=t~

MIlliMETERS
DIM MIN MAX
A 21.84 22.35
9.91 10.41
B
439
4.65
C
0.74
0.58
D
4.06
F
3.56
2.41
2.67
G
H
1.70
1.96
0.48
0.66
J
K 12.19 12.95
l
1.65
2.03
9.91 10.16
N
Q
3.81
3.56
1.75
1.07
R
7.87
9.14
T

INCHES
MIN MAX
0.860 0.880
0.390 0.410
0.173. 0.183
0.023 0.029
0.140 0.160
0.095 0.105
0.067 0.0))
0.019 0.026
0.480 0.510
0.065 0.080
0.390 0.400
0.140 0.150
0.042 0.069
0.310 0.360

TO-202AC
CASE 306.04

1-411

NPN D40E1, D40E5, D40E7
PNP D41E1, D41E5, D41E7

lIB
ELECTRICAL CHARACTERISTICS ITA = 25°C unl... otherwise noted.}

I

I

Characteristic

Symbol

Min

Max

30
60
80

-

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IIc =

Vde

BVCEO
D40El/D41El
D40E5/D41 E5
D40E7/D41E7

10 mAde; IB = 0)

Emitter Cutoff CUrrent
(VEB = 5.0 Vde, IC = 0)

IE80

-

100

nAdc

Collector Cutoff Current
IVCE = Rated VCES)
ON CHARACTERISTICS (1)

ICES

-

100

nAde

DC Current Gain

hFE
50
10

-

VCElsat)

-

1.0

Vde

vBElsat)

-

1.3

Vde

75

375

MHz

-

12
18

pF

-

IIc = 100 mAde, V CE ~ 2.0 Vde)
IIc = 1.0 Ade, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage

IIc = 1.0 Ade,lB =

100 mAde)

Base-Emitter Saturation Voltage

IIc = 1.0 Ade, IB =

100 mAde)

DYNAMIC CHARACTERISTICS

Current Gain -Bandwidth Product

lic = 20 mA, VCE = 10 Vde, I

IT
~ 20 MHz)

Collector-Base Capacitance
D40E series
D41E series

IVCB = 20Vdc,IE = 0, 1=1 MHz)

Ccb

-

II) Pulse Test: Pulse Width .. 300 I'S, Duty Cycle .. 2.0%.

TYPICAL CHARACTERISTICS

FIGURE 2 - CAPACITANCES

FIGURE 1 - CURRENT GAIN-BANDWIDTH PRODUCT

~lo~'..ries

v)J
TJ"25 QC

......

0

V V

200

1--'"'1--'

.....

-Ill
IJ!!i"

04i

........

r---.. I'-.

~

~

"'
u

Z

""t:

~

0

u'

0

0

10

20

30

50

70

100

200

300

- _ .. 041E series

I

100 - -

SOD

IC. COLLECTOR CURRENT ImA)

1-412

0
0

CeD

0

20 _
0
7
53
2
0.1

0.2

TJ -.250 C

~

-

- - 04DEserin

-1
dell
T,

-

Applies for Rated VCBO

II IIII
0.5

I

10
20
VR. REVERSE VOLTAGE IVoLTS)

SO

100

NPN D40E1, D40E5, D40E7
PNP D41E1, D41E5, D41E7

III

TYPICAL CHARACTERISTICS (continued)
D41E series

D40E series
FIGURE 3 - DC CURRENT GAIN
400

200

z

~~

V

iii

I
<>

:#

po..

TJ = 125°C

..........,

200

z

~lsoJ

.....

100
_ 80

u

300

~J~ 125°C

2slc

C

~

~

i

~
100

V~~. rov

""'"

",.

40

u
~

...

70

-

-55°C

::>

60

-... r-.'

co

~

t..--

~ 50
VCE=l.oV

20
10

5.0

20

10

20

50

100

500

200

30
1.0

10k

5.0

2.0

10

SO

20

100

200

500 1000

IC. COLLECTOR CURRENT ImA)

IC. COLLECTOR CURRENT ImA)

FIGURE 4 - "ON" VOLTAGE
0

1111~J=25bc

~

w

co

1.0

~

II

[lITI
I 1.1.
VBEI .. l)@ICIlB = 10

8

~ 06

II T

:;.....

s

V~E J] V

r--

o.8

>
>'

I

....

1=---

VBElsat)@ICIlB = 10

VBEI.n)@VCE = 5.0

w

~<>

IIIIIII

TI1lIT

~ O.6

VBElon) @

o~ 0.4
>
>'

O. 4

-

o. 2

0.2

--

o

TJ=25oC

10

-

VCE{sat)@ICIIB= 10
2.0

SO

10

VCEI ..t)@ ICIIB = 10

o

20

50
100
200
IC. COLLECTOR CURRENT ImA)

500

1.0

1.0 k

2.0

5.0

10
20
50
100
IC. COLtECToR CURRENT {mAl

200

500 1.0 k

FIGURE 5 - COLLECTOR SATURATION REGION
_

10

1 .J

!:c

S
c

T\ 2sl

>

~

~ 0.8

'"~

co

~

c

~

> 0.6

"'~

O.8

o.6

ffi

~ 0.4

\

c

0.2

8

w

~

TJ=2S·C

Ic=10mA

SOmA

25DmA 500mA

1.oA

::::

!

'i

~_

1. 0

0

~=lri' ~~

1111t+ W

0.05 0.1

0.2

0.5

~~
~ 1m
5.0 10 20
50

1.0 2.0
lB. BASE CURRENT (mA)

1.0 A

0.4

=
~ 0.2
8

~
100 200

500

0

0.05 0.1

0.2

0.5 1.0

2.0

5.0

10

20

18. BASE CURRENT (mAl

1-413

50 100 200

500

NPN D40E 1, D40E5, D40E7
PNP D41E1, D41E5, D41E7

TYPICAL CHARACTERISTICS (continued)
FIGURE 6 - THERMAL RESPONSE
I.D
D.1 O-D.5
0.5

.-

~!

0.3 -0.2
0.2
o-:E
0.1
:;:; 0.115
~~
&U~ O. I
Si..tePul.

~~ 0.05
"i:'~

-~
~

!~O.ol

<>;;;

"'"

,:::::;1'

~~

z,JC(t) - ,(t) RUC
R6JC' 15.60CNI Max

pErUl

Singl.Pulse

0.03 '" 0.02
0.02

Z,JA(tl • ,(t) R.JA
R8JA'" 750 CIW Max

D Curves Apply for Power
Pulse Train Shown
Read Tim. at t1
TJ(pkl-TC' Pipki IIfJc(tl
Duty Cyele, D = 11/12

-t~j

0.01

.1"

I

0.0 I

- -

0.01 0.02

0.05

0.1

0.5

0.2

1.0

2.0

5.0

10

20
50
t. TIME (m~

100

200

500

1.Ok

2.Dk

5.ok lDk

20k

50k lOOk

FIGURE 7 - ACTIVE-REGION SAFE-OPERATING AREA

D40E series

!ffi

1m. ~ ..,!DOI4

...

0.5

....

a: D. 1

~ 0.05
~o.D

t=

2~

D.D 1~

-

I
o

----Thermal Limit,SinglaPulse

0.0 1~
10

~

a:
o

"-

r-

!I!

for duty cycles to 10% provided TJ(pk)';; 150°C. TJ(pkl may be

Second Breakdown Derating

r-....

I'...

O.4

FIGURE 8 - POWER DERATING

I" "-

D.2

"-

0

20

40

6D

80

100

calculated from the data in Figure 6. At high case temperatures,
thermal limitations Wilt reduce the power that can be handled to
values less than the limItations imposed by second breakdown.

Thermal Derating ' "

O.6

10

The data of Figure 7 is based on T J(pk) = 150 0 C; TC is variable
depending on conditions. Second breakdown pulse limits are valid

- --"-

0:

2

Tr 250C
Bonding Wire Limit
Thermal Limit, Singte Pulse
---Seeond Breakdown limit
(Applies Below Rated VCEO)
10
20
50
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS

There are two limitations on the power handling ability of a

~ I--.

l">

- - - -

100

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; Le., the transistor
must not be subjected to greater dissipation than the curves i~dicate.

~
ffi
o

~

~O.O 2~

10
20
50
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

'"z

0.5

:5 O. 1
t;
j 0.05

---Second Breakdown limit
(Appli .. Balow Rated VCEO)

~~

de
det- t:-r- TC" 25°C
TA-250C

B 0.2

TJ =25°C
Bonding Wire Limit

lo.8

1

~

1"-

...

1.0

1m. ts:,100 ...

~

ic =25°C
de
TA =25°C
'j 1 I

::>

~

....

de

a: D.3
a:

o

D41E series

lDO

120

TC. CASE TEMPERATURE (OCI

1-414

"

140

160

NPN

®

040K
PNP

MOTOROLA

041K

DUOWATT
COMPLEMENTARY SILICON DARLINGTON
AMPLIFIER TRANSISTORS
· .. designed for amplifier and driver applications where high gain is
an essential requirement, low power lamp and relav drivers and
power drivers for high·current applications such as voltage regulators.

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 1.5 Adc for D40,41Kl,2

•

Duowatt Package 2 Watts Free Air Dissipation @ T A = 250 C

COMPLEMENTARY SILICON
DARLINGTON AMPLIFIER
TRANSISTORS

Tab forming and
on specla' request.

TO~5

lead forming available

MAXIMUM RATINGS
Rating

Collector·Emitter Voltage
Collector-Emitter Voltage

Emitter-Base Voltage
Collector Current - Continuous
Peak (1)
Base Current - Continuous

Total Power Dissipation @ TA - 2SoC

Symbol
VCEO
VCES
VESO
IC

D40/41K
1,3

D40/41K
2,4

30
30

50
50

·S
PD

Adc

STYLE •.
PIN 1 EMITTER
2. BASE
3. COLLECTOR
4. COLLECTOR

04 ~L
--l I--G

mAde

rNhl

Watts
mW/oC
Watts
mW/oC

TJ, T stg

10
80
-55 to +150

-

260

°c

PD

Derate above 2SoC
Operating and Storage Junction

Vdc
Vdc
Vdc

13
2.0
3.0
100
1.67
13.3

Derate above 25°C 12)
Total Power Dissipation @TC== 2SoC

Unit

l~..J

f t:::::::J-=tJ

°c

Temperature Range

Solder Temperature, 1/16" from Case
for 10 Seconds

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

I

I
I

Symbol
R8JA

I

I
I

Max
75
12.5

I

I
I

Unit
°CIW
°CIW

R8JC
1. Pulse Width" 25 ms, Duty Cycle" 50%.
2. The actual power dissipation capability of Duowatt transistors are 2 W @ T A:: 25°C.

DIM

A
B
C
D
F
G
H
J
K
L
N
Q

R
T

MIlliMETERS
MIN MAX

21.B4
9.91
4.39
0.58
3.56
2.41
1.70
0.48
12.19
1.65
9.91
3.56
1.07
7.87

22.35
10.4.
4.65
D.74
4.06
2.67
1.96
0.66
12.95
2.03
10.16
3.81
1.7
9.14

INCHES
MIN

MAX

0.860
0.390
0.173
0.023
0.'40
0.095
0.067
0.019
0.480
0.065
0.390
0.140
0.042
0.310

0.880
0.410
0.183
0.029
0.160
0.105
0.077
0.026
0.510
0.080
0.400
0.150
0.069
0.360

TD-202AC
CASE 3oe-04

1-415

NPN D40K, PNP D41K

ELECTRICAL CHARACTERISTICS (TA ~ 25 0 C unless otherwise noted.)
Ch_iotlc
Symbol
OFF CHARACTERISTICS

Min

Max

Unit

Coliector·Emitter Breakdown Voitege (1)
(lC= 10mAdc)

30
50

-

Vdc
I'Ade

I

I

Collector Cutoff Current
(VCB = Rated VCES, Ie = 0, TJ
Collector Cutoff Current
(VCE = Rated VCES, VBE = 0)
Emitter Cutoff Current
(VEB = 13 Vdc, IC = 0)
ON CHARACTERISTICS (1)

D40,41Kl,3
D40,41K2,4

= 150o C)

DC Current Gain
(lC = 200 mAde, VCE = 5.0 Vde)
(lC = 1.5 Ade, VCE = 5.0Vde)
(lC = 1.0 Adc, VCE = 5.0 Vde)

ICBO

-

20

ICES

-

0.5

I'Ade

lEBO

-

100

nAde

-

hFE
All Devices

D40,41Kl,2
D40,41K3.4

Base-Emitter Saturation Voltage
(lC = 1.5 Ade, IB = 3.0 mAde)
(lC = 1.0 Ade, IB = 2.0 mAde)

040,41 Kl,2
D40,41K3,4

-

10,000
1,000
1,000

-

-

1.5
1.5

-

2.5
2.5

Ceb

-

10
25

pF

Ihfe l

1.0

-

-

D40,41Kl,2
D40,41K3,4

Collector-Emitter Saturation Voltage
(lC = 1.5 Adc, IB = 3.0 mAde)
(lC = 1.0 Ade, IB = 2.0 mAl

Vde

VCE(satl

Vde

VBE(sat)

DVNAMIC CHARACTERISTICS
Collactor Capacitance
(Vca· 10 Vdc, IE = 0, f = I,D MHz)
High Frequency Current Gain
(lC = 20 rnA, VCE = 5 Vde, f

BVCEO

D40K series
D41K series

= 100 MHz)

1. Pulse Test: Pulse Width.;; 300 I'S, Duty Cycle';; 2.0%.

TVPICAL.CHARACTERISTICS

FIGURE 1 - DC SAFE OPERATING AREA
3.0

~

1.0

~

0.7

~

0.5

0.2

8

0.1

~

'"" '" "-

1.6

~

Te - 250 e

de

"
::

T0

~ 1.2

.....

TA =250 e

0.3

'"~



~

2.0 10

II I
I HI.

2.0
0::

FIGURE 2 - POWER DERATING

TA TC

~

008

ffi .

~.

~

i' 0.07

,pO.4

TC

•

'\:

"-,,

i"-.."'-

4

2

0..
"":

0.05

0.03
0.40.5 0.7

1.0

2.0

3.0

5.0 7.0

10

30 40

veE. COLLECTOR·EMITIER VOLTAGE (VOLTSI

1-416

o
o

20

40

60
80
100
T. TEMPERATURE (OCI

"

120

~
140

160

NPN 040K, PNP 041 K

TYPICAL CHARACTERISTICS (continued)

DC CURRENT GAIN
FIGURE 3 - (D40K se,i••1
300 k

I

200 k

k
z 1110
~ 70k

< 70 k

~

50 k

~

30 k

~ 20 k

~

~

k

~

20 k

TJ = lZS0C

50
_ 30 k

25°C

'-'
Q

JC~~s v t--

2110 k

TJ= 125°C

100 k

z

FIGURE 4 - (D41K sa,iasl
300 k
VCE-5.0V

-550 C

25°C

'" 10

10 k
70 k
50 k

~

r-..

r-...

-55°C

Q

k

~

7.0 k
5.0 k

30 k
20

50

30

70

100
200 300
500 700 1.0 k
IC. COLLECTOR CURRENT ImAI

3.0 k
20

20k

30

50

70 100
200 3110
500 700
IC' COLLECTOR CURRENT (mAl

Z.Ok

1.0 k

"ON" VOLTAGES
FIGURE 5 - (D40K sa,iasl
2.0

t--

. Ti -2~0~
I

1.8

8

~1.

FIGURE 6 - (D41K sa,iasl
2.0

V

6

~1. 4

..J...I..+tt: :.b:--t'::

'"<

w

~

.L

!:i

I I Ll

20

50

30

70

i,..o-"
/'

-

>--

I-

~

.J......-1'"

--r

VSE @I VCE = 5.0 V

/

V

>" 1.0

I-

~

O.S

VCE(sat)@IClIs=SIIO

II II

o6

1.2

'">

~

VCElsatl@IC/IB - 500

8

I

I- TJ = 25°C

1.6

Q

>
>"1.0

!S

~ 1.4

V8Elo;i@ VC~ - 5.0 V

~1. 2

-

VSE(sa'l @lICIlS = 5110

./

.....
.....

VSE(satl@ Ic/lS =~

I

200 300
500 700 1.0 k
100
IC, COLLECTOR CURRENT ImAI

O. 6
20

20k

50

30

70 100
200 300
500 700
IC, COLLECTOR CURRENT (mAl

1.0 k

2.0 k

FIGURE 7 - THERMAL RESPONSE
0
O.

~~

~~
....
tzg;

,.

w~

~

0 = 0.5

0, 3f-

02

!l-

-

"'"

:::iii

f.:;:l

0.1
D.05
Q. 1 -

!~ 0.07

~

SlIlglePulse

:=.~ 0.0 5

-

-

- - Zs)C(Il. = rill R.JC
ReJC = 12.SoC/W MIX

ffiJl --

SmglaPulse

P(pkl

---01-J

~~o.o 3 ...... 0.Q2
0.01
0.02
,1'
0.0 1
0.01

DCURVESAPPLYFDRPOWER
PULSE TRAIN SHOWN
READ TIME AT'l
TJ(pk) -TC =p(pldReJCIIl
Duty Cycle, D = 'l1lZ
500 1.0 k z.o k
5.ok 10k 10k
SOk lOOk
'1

I
0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20
t, TIME

50
(m~

1-417

100

200

Z'JA(t)· rill R'JA
ReJA = 7S oC/W Max

12

III

NPN 040K, PNP 041 K

TYPICAL CHARACTERISTICS (continued)

OJ

CAPACITANCE
FIGURE 9 - (041 K se,iesl

FIGURE 8 - (D40K ..,iesl
40

20
TJ= 250,

30

-

..

~ 10
u

z

~7. 0

;:;
~

;5 5.0

~

r--.

III
IIII

r---

20

C,b

rm

w
u

z

Ceb

«
....

r:-

Y

Ccb

<3
~

;3

~

Tr 250C

Ccb

I--t-

10

,,;
7.0

3.0
5.0

2.0
0.05 _0.1

0.5

0.2

1.0

2.0

5.0

10

20

50

0.05

0.1

0.2

VR, REVERSE VOLTAGE (VOLTSI

0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTSI

20

50

HIGH FREQUENCY CURRENT GAIN
FIGURE 11 - (041K se,iosl

FIGURE 10 - (D40K ..,iesl

.....

z

'"

~

~

10

10
5.0

2.0

-

-

~

::0

~....
;:
'"'"
i.

....

VCP5.0Vd;'
TJ' 25~C
f·l00MHz

t

1.0

f==VCE - 5.0 Vdc
f - - Tr25 0C
f-lOoMHz

z

~ 5.0 ~

~

a

I'r-.

2.0

t

~

~
'"'"

0.5

1.0
0.5

;:
;;, 0.2

0.2

'"

o. 1
0.D1

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

IC. COLLECTOR CURRENT (AMPI

O. 1
0.01

0.02

0.05

0.1

0.2

IC. COLLECTOR CURRENT (AMPI

1-418

0.5

1.0

®

D40N3
D40N4

D40Nl
D40N2

MOTOROLA

'II
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS

DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS

· .. designed for high·voltage TV video and chroma output circuits,
high·voltage linear amplifiers, and high·voltage tranSIStor regulators.

•

High Collector· Emitter Breakdown Voltage BVCE R = 300 Vdc (Min) @ IC = 1.0 mAdc - D40N3, 4

•

Low Coliector·Base Capacitance Ccb = 3.0 pF (Max) @ VCB = 20 Vdc

•

Duowatt Package 2 Watts Free Air Dissipation

@

T A = 250 C
Tab forming and TO-5 leed forming available on
special request.

Q

MAXIMUM RATINGS
Symbol

Rating
Collector~Emitter

Voltage (1, 2)

Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
- Peak

D40Nl,2

D40N3.4

Unit

VeER

250

I

300

Vdc

VeBO

250

I

300

Vde

VEBO

5.0

Vde

Ie

0.1
0.7

Ade

Base Current

'B

250

mAde

Total Power Dissipation @TA - 25°C
Derate above 25°C

Po

1.67 (31
13.3

Watts
mWfOe

Total Power Dissipation @TC = 2SoC
Derate above 2SoC

Po

6.25
50

Watts
mW/oe

TJ, T stg

-55 to +150

°e

-

260

°e

Operating and Storage Junction
Temperature Range

Solder Temperature. 1116" from Case
for 10 Seconds

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

ROJA

75

°C/W

Thermal Resistance, Junction to Case

ROJC

20

°C/W

Characteristic

(II Ie

~

1.0 mAde, RBE

~

10 kn.

~ 300 MS, Duty Cycle ~ 2%.
(3) The actual power dissipation capabIlity of Duowatt transIstors are 2 W @ T A

(21 Pulse Test: Pulse Width

=

25°C.

STYLE 1

PIN 1 EMITTER
2 BASE

3 COLLECTOR
4 COLLECTOR

MILLIMETERS
MAX
DIM MIN
A 2184 22 35
9.91 1041
B
C
439
4.65
074
058
0
406
F
356
241
2.67
G
H
1.70
196
048
066
J
K 1219 1295
165
203
L
9.91 10.16
N
Q
3.81
356
1.01
1.15
R
1.81
9.14
T

INCHES
MIN MAX
0.860 0880
0390 0.410
0173 0183
0023 0019
0140 0160
0095 0105
0.067 0077
0019 0016
0.480 0510
0065 0080
0390 0.400
0.140 0.150
0.042 0.069
0.310 0.360

TO-202AC
CASE 306..Q4

1-419

D40N1, D40N2, D40N3, D40N4

OJ

ELECTRICAL CHARACTERISTICS (TA

I

= 25 0 C unle.. otherwise noted.!

I

Characteristic

Min

Max

250
300

-

-

10
10

20
30
30
60
20
30

90
180

fT

50

-

MHz

Ceb

-

3.0

pF

Symbol

Unit

OFF CHARACTERISTICS
COllector-Emitter Breakdown Voltage (1)
IIC = 1.0 mAde, IB 0, RBE 10 kO)

=

D40Nl,2
D40N3,4

Collector Cutoff Current
(VCB = 250 Vde, IE = 0)
(VCB· 300 Vde, IE = 0)

"Ade

ICBO
D40Nl,2
D40N3,4

Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
ON CHARACTERISTICS (11
DC Currant Gain
lie =4.0 mAde, VCE

Vde

BVCER

=

lEBO

10

-

hFE

= 10 Vde)

D40Nl,3
D40N2,4
D40Nl,3
D40N2,4
D40Nl,3
D40N2,4

IIc • 20 mAde, VCE = 10 Vde)
IIC· 40 mAde, VCE • 10 Vdc)

"Adc

-

-

DYNAMIC CHARACTERISTICS
Currant-Gain - Bandwidth Product
IIc = 20 mAde, VCE = 10 Vde, f - 20 MHz)
Collector-Base ClIPacltance
(VCB· 20 Vde,le = 0, f· 1.0 MHz)
(1) Pulse Te.t: Pulse Width .. 300 "S, Duty Cycle .. 2.0%.

TYPICAL CHARACTER ISTICS
FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
0

-

050

ie

i,lOOps

~ 0.2 0

!

01 0

de

~ 0.05
~

~

"

de

TA~250C

.JC

10ms

25 0C--'->o,-c-

"N.

2
-r-- TJ ~ 150 ~0.0 lr--=f- BONOING WIRE LIMIT
THERMAL LIMIT. SINGLE PULSE. TC ~ 250C
80005
SECONO BREAKOOWN LIMIT
~
O'ON1.2
0.002

=

There are two limitations on the power handling ability of a
tranSistor average Junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limIts of the tranSistor

that must be observed for reliable operation; I.e., the transistor

~o~s

must not be subjected to greater diSSipation than the curves Indicate.
The data of Figure' IS based on T J(pkl :: 150°C; TC isvanable
depending on conditions. Second breakdQ¥.ln pulse limits are valid

00

000 1
1.0

-

for dutv CVcles to 10% prOVIded TJ(pkl';; 150°C. TJ(pkJ mav be
calculated from the data In Figure 6 At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations Imposed by second breakdown.

·m~3.4

2.0

5.0

10

20

50

100

200

500 10k

VCE. COLLECTOR-EMITTER VOLTAGE (Val TSI

1-420

D40Nl,D40N2,D40N3,D40N4

TYPICAL CHARACTERISTICS (continued)

FIGURE 2 - DC CURRENT GAIN

3110
TJ

200

l-

i
_

TJ = 2SoC
1.2

r-....

1.0

70
0

~
I

0

~_

- ,...

-Ssuc

0
20

'"'c

i

1.4

~ I2Jocl

"...- 1'2soc

100

.,~

l1li

FIGURE 3 - "ON" VOLTAGES

~

'- ~~

V8Elool@ VCE = 10 V

'">.>

0.4

1.0

2.0 3.0 5.0

10

20 30

50

100

I

~~~i\~t)

L
"'?<,

IC/lS=~

~.o

2.0

o

0.3 O.S

200 300

I

11111

0.2

3.0
0.3 0.5

J

0.6

C!J

~

~CE-IOV

. m\it' @ Ic/lS = 10

w

'5,

VCE -2.0 V

7.0
5. 0

~

O. 8

Z

1.0

2.0 3.0 5.0

10

20 30

50

100

200300

IC. COLLECTOR CURRENT ImA)

IC. COLLECTOR CURRENT (mAl

FIGURE 4 - COLLECTOR SATURATION REGION
2.0

FIGURE 5 - TEMPERATURE COEFFICIENTS

3.0

TJ=2S oC

-*Apphesfor le/ls 

-SSOf to 2S OC

I

'"'

~-1. 0

o.8
le=

o.4

1.0mA 3.0mA

I II mil N.I

o

I "ItO.OS.w.u:0.1

0.01 0.02

InOmA

"'~" -2.0

N '-ll !rN.1

..... -3. 0

3D
rnA

l[1mA

50 rnA

-evlsforJ SE

-55 DC to 25 DC

·1- ·-1
I

~

i

H-rtt ffi
10 20

..Lr

25°C to 125 DC

so

os 1.0 2.0 5.0
0.2
lB. BASE CURRENT (mAl

I

-4.0

100

1.0

20

3.0

50 7.0

10

20

30

SO

70 100

IC. COLLECTOR CURRENT ImA)

FIGURE 6 - THERMAL RESPONSE
1.0
0.7
0-0.5
0.5

:~

0.3

ffi~ 0.2

~~

E~
o. I
u;w

f-

'""

I::;;ilii

-

0.1

:::;: o.oS

~fi 0,07

SmglePulse

~_~ 0.05

~~

~
I--

0.2

-~
ZeJC(tl = rlt! RUC
Rf:f~C:: 12.5 0CJW Max

pEfUl

StnglePulse

0.03 "" 0.02
0.01
0.02

I

0.01
0.01

0.02

Duty Cycle, 0 '" I1h2
0.05

0.1

0.2

0.5

1.0

20

5.0

10

20
t, TIME (ms)

1-421

50

100

200

500

1.0k

- ZeJAlt) = rlt) ReJA
ReJA '" 62.50 CtW Max

o CURVES APPLY FOR POWER

-t~J

.1'"

-

2.0k

PULSE TRAIN SHOWN
REAO TIME AT tl
TJlpkl- TC =Plpkl ReJc(t!
S.Ok 10k

20k

SDk lOOk

040Pl
040P3
040P5

®

MOTOROLA

NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS

DUOWATT
NPN SILICON
AMPLIFIER TRANSISTORS

. designed for horizontal drive applications, high-voltage linear
amplifiers, and high-voltage transistor regulators.
•

High Collector-Emitter Breakdown Voltage BV CEO = 225 Vdc (Min) @ IC = 1.0 mAdc - D40P5

•

Low Collector· Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max)@ IC = 100 mAdc

•

Duowatt Pa·ckage 2 Watts Free Air Dissipation @ TA = 250 C

Tab forming and TO·5 lead forming available on
spacial request.

l

Q

Rating
Collector-Emitter Voltage

Symbol
VCEO

Collector-Base Voltage

VCBO

Emitter-Base Voltage
Collector Current - Continuous
Peak (11

VEBO
IC

Base Current

Total Power Dissipation
Derate above 2SoC

@

T A = 2So C

Total Power Dissipation@Tc=250C

IB
Po
Po

Derate above 2SoC
Operating and Storage Junction
Temperature Range
Solder Temperature, 1/16" from Case
for 10 Seconds

I

I

Unit

I

I

Vdc

D40Pl
D40P3 D40PS
120
225
180
200 I 250 I 300
....--7.0---..
-0.51.0100-1.67(21-13.3-

..

"-6.25~
........-50~

TJ.T"g

-

.

Vdc
Vdc
Adc
mAde

~

'~'~,!_ JK
oj~

-G l

Watts
mW/oC

Watts
mW/oC

-55 to +150----..

°c

260-

°c

THERMAL CHARACTERISTICS
Charac'taristic

STYLE 1

PIN im:::OR
4. COllECTOR

Symbol

Max

Unit

Thermal Resistance. Junction to Ambient

ROJA

75

Thermal Resistance. Junction to Case

ROJC

20

°CIW
°C/W

(11 Pulse Test: Pulse Width .. 1.0 ms, Duty Cycle" 50%.
(2) The actual power dissipation capability of Duowatt transistors are 2 W @ T A = 25Q C.

MILLIMETERS
DIM MIN
MAX
A 2184 2235
991 1041
B
439
C
465
074
058
0
406
F
356
241
267
G
H
170
196
048
J
066
1219 1295
K
L
165
203
N
991 1016
Q
356
381
1.07
1.
R
7.S7
9.14
T

INCHES
MIN MAX
0860 0880
0390 0410
0173 0183
0023 0029
0140 0160
0095 0105
0067 0017
0019 0026
0480 0510
0065 0080
0390 0400
0140 0150
0.06
0.04
0310 0.360

TO'202AC
CASE 306·04

1-422

A

Li

MAXIMUM RATINGS

D40P1, D40P3, D40P5

I

ELECTRICAL CHARACTERISTICS ITA

ID

=25 0 C unle.. otherwise noted.)

I

Character

Symbol

Min

Max

120
180
225

-

Unit

OFF CHARACTERISTICS
Collector· Emitter Breakdown Voltage (1)
(lC = 1.0 mAde, IB = 0)

Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 250 Wde, IE = 0)
(VCB = 300 Vde, IE = 0)
Emitter Cutoff Current
(VEB = 7.0 Vde, IC = 0)
ON CHARACTERISTICS (1)

.-

040Pl
D40P3
D40P5

-

-

10
10
10

-

10

40
20

-

VCE(satl

-

1.0

Vde

VBE(satl

-

1.5

Vde

fT

50

-

MHz

Ceb

-

6.0

pF

lEBO

= 100 mAde, IB = 10 mAl

'I'Ade

-

hFE

= 80 mAde, VCE = 10 We)
= 2.0 mAde, VeE = 10 Vde)

Collector-Emitter saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
Base-Emitter Saturation Voltage
(lc

I'Ade

ICBO

DC Current Gain
(lC
(Ie

Vde

BVCEO
040Pl
040P3
040P5

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(Ie = 80 mAde, VeE = 10 Vde, f

= 20 MHz)

Collector-Base Capacitance
(VCB

= 10 Vde,

IE

= 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS
Storage Time
(lC(on) = 80 mA, IB(on)

=8.0 mA, IB(off) =8.0 mAl

(1) Pulse Test: Pulse Width .. 300 I'S, Duty Cyela" 2.0%.

TYPICAL CHARACTERISTICS
FIGURE 1 - CURRENT ·GAIN - BANDWIDTH PRODUCT
"" 300

'"~
...
g
~

...'"c

~ 100

z

:;
z

~
~

I
VCE~

200

c

70

FIGURE 2 - CAPACITANCE
100

---

70
10V

50

TJ -15°C

!--

30

~

I--- .......

Cob

I--

w
u

:i
...

10

~ 7.0

~ 5.0

\

,:.

50

t--.

t.; 3.0

Ccb -

1.0

a
J::

~

20

30
10

30
50
10
Ie, COLLECTOR CURRENT (mAl

70

100

1-423

1.0
0.3

~

F";

0.50.7 1.0

1.0 3.0 5.07.0 10
10 30 50 70 100
VR, REVERSE VOLTAGE IVOLTS)

100 300

D40P1, D40P3, D40P5

OJ

TYPICAL CHARACTERISTICS (Continued)

FIGURE 3 - DC CURRENT GAIN

FIGURE 4 - "ON" VOLTAGE

500

1.0

.

i

-

TJ=150oC

--

200

z

;;:

-

-

25°C
100

=-550C _

70
50

u

c

30

~

20

-

o. a

-

VaEI"tl@lc/la = 10

~

-

..

VaElonl @VCE = 10V

w

2.0

~

100

ZOO

500

TJ =25°C

.s

~

0.4

\

0.1

o

~

>

0
0.1

;:;

\

\
1'-

----

0.2 0.3 0.50.71.0
2.0 3.0 5.070 10
la. aASE CURRENT ImAI

.s

/1-'"

I-

~a 120

~ V I..--'
~~
~
~

'"

~
8
}j

,--I~= I.Z~A

0

f/. V
40 W/

--

10

ZO

~
50 70 100

>---I"-

-;r"~

/

I I II

-0.8

1 III
+250 C to +1250 C

c-

...j.,...H'!

ova fOT VSE

L

V~

-550C to +25 0 C

-2.4

1.0

0.5

0.2

FIGURE

--

2.0

5.0

10

20

50

100

200

I--

a-

COLLECTOR CUTOFF REGION

VCE = 150 V

102
1 r-- TJ = 150dC

600_A

0

I
400_A
I

V

Ie. COLLECTOR CURRENT ImAI

-r

30

500

-550C to +250C

g

I---

100DC

1

20~_A

V

o
o

\.Q"'~

+250 Clo +1250C

~ -1.6

FIGURE 7 - COLLECTOR CHARACTERISTICS
zoo TA = Z50C
PULSE WIOTH = 300_,;;:
DUTY CYCLE" Z.O%
160

~

:

20 30

zoo

I I II
I III

i

\
\

'-

u

::;

ZOOmA

1\
\

c

~_

0.8

~

100 rnA

Z.O

II 1111
II 1111
'OVC FOR VCElsatl

I-

\IC = Z5mA,pOmA

1.0

5.0
50
10
ZO
50
100
IC. COLLECTOR CURRENT ImAI

"Applies for IC/18 ~hFE/2

G
'!.

0.8

0.6

~

VCEI"tl @Iclla = 10

FIGURE 6 - TEMPERATURE COEFFICIENTS
1.6

>

~

f-

I

0
0.5

c

~

:/

VII'

o.Z

FIGURE 5 - COLLECTOR SATURATION REGION
1.0

-

>
>.

,,~

5.0
10
ZO
50
IC. COLLECTOR CURRENT ImAI

./

V

D.4

c

"'~

I I 111111

10

~

i'-.'-' ,,

--VCe= 2.0 V
--VCE = 10V

1.0

U-Httt

O.6

o
~

~

7.0
5.0
0.5

~
~

I I illl
II III

TJ = 25DC

300

2~
40

50

10-3 b =
-04

REVERSE

=

FORWARD

25°C
-0.2

+0.2

+0.4

VaE. aASE·EMITTER VOLTAGE IVOLTSI

VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

1-424

+0.6

D40Pl, D40P3, D40P5

TYPICAL CHARACTERISTICS (Continued)
FIGURE 9 - THERMAL RESPONSE
1.0

o.~

0" 0.&

0.3

-oj

O.

:~

~~ 0.2
0-'"

E~
u;w

o. 1

......

"""

I:::iiiiii

~~O.O1

Single Pulse

~~ 0.05

-

-

0.1

::; 0.0&

pEfUl
-t\;-J

SmglePulse

:g~ 0.03 '" 0.02
0.01
0.02

'1""

I

0.0 1
0.01 0.02

Duty Cycle. 0 :::: 11/t2

0.0&

0.1

0.&

0.2

1.0

2.0

&.0

10

20
t,

FIGURE 10 - ACTIVE REGION SAFE'()PERATING AREA

,=

100
100 •.
1000mEmBmm
&00

;(

~

~

300 f-+""hd--l+f-I--....
.;:......t.--+-+-++H-f+'"
;-50_C+"-=-..d- dCf-H-++t-+'-'.-:·,1",'0f-m_'-H--I
200 f---+--+-H"I-:I-tT-=C_"_2t-

"

~~

"

\

~ =~~~~~~~~~d~C~~~~~~~~~~~§
r-:-'::-__

8

~

30 r-- f--

TA - 2 5 0 C '
BONDING W"'I-R=-E-'-Ll"'Mc:IT::-'---'-'....:-+f-f-f---+~t+-j

- - - THERMAL LIMIT. SINGLE PULSE -t:=J:+$t:;;+~:I=~
- - - SECOND BREAKDOWN LIMIT
-l
(Applies Below Rated VCEO)

1

3.0

"

&.0 1.0 10
20
50 10 100
30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

200

300

50

-~

~ 0.8

~

"'- .............

'"o0z

'"

w

~

0.2

o

o

20

40

I

DeratrrlQ

i'-..

0.4

""-

'" f"....
" " ""-

60
80
100
120
TC. CASE TEMPERATURE (OC)

........

"

140

500

1.0 k

2.0 k

-

Z8JA(I) " r(t) R8JA
R8JA " I&OC/W Max

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ(pk) -TC "P(pk)R8JC(I)
5.0k 10k

20k

&Ok lOOk

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
TJ(pk) may be calculated from the data in Figure 9.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

Second Breakdown

............
Therm~
Derating

~

~ O.6

~
ffi
o

I

200

-

TIME (ms)

FIGURE 11 - POWER DERATING
1.0

100

ZeJCIO • r(t) RUC
R8JC " 20oC/W Max

160

1-425

NPN
D44C Series
PNP
D45C Series

-

®

MOTOROLA

COMPLEMENTARY SILICON POWER TRANSISTORS

4.0 AMPERE

· .. for general purpose driver or medium power output stages in CW
. or switching applications.

COMPLEMENTARY SILICON
POWER TRANSISTORS
30-S0VOLTS

• Low Collector-Emitter Saturation Voltage - 0.5 V (Max)
• High ft for Good Frequencv Response
• Low Leakage Current

MAXIMUM RATINGS
D44CorD46C
Rating

Symbol

1.2.
3

4.6.

7.S.

6

9

10.11. Unit
12

Collector-Emitter Voltage

VCEO

30

45

60

SO

Vdc

Collector-Emitter Voltage

VCES

40

55

70

90

Vdc

Emitter Base Voltage

VES

5.0

Vdc

Collector Current - Continuous
Peak(l)

IC

4.0
6.0

Adc

Total Power Dissipation

Po

@TC=25°C
@TA=25°C

Operating and Storage Junction
Temperature Range

TJ.
Tstg

30
1.67

W/oC

-55 to 150

°c

rrf
11.J~u
I

~I

U
-JJ_~

Symbol

Max

Unit

R8JC

4.2

°C/W

Thermal Resistance. Junction to Ambient

R8JA

75

°C/W

TL

275

Maximum Lead Temperature for Soldering
Purposes: 1 IS" from Case for 5 Seconds

°C

(11 Pulse Width';; 6.0 ml, Duty Cycle';; 50%.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)

(VCE = 1.0 Vdc, IC = 1.0 Adc)

(VCE = 1.0 Vdc, IC = 2.0 Adc)

Symbol

Min

Max

Unit

-

hFE
044C3,6,9,12
045C3,6.9,12
045C2,5,8,11

40

044C2,5,S,11

100

220

044Cl.4.7.10
045Cl.4,7.10

25

-

044C3,6,9,12
045C3,6,9.12
044C2,5.S,11

20

-

045C2,5,S,11

20

-

044Cl.4,7,10
045Cl.4,7.10

10

-

120

SECT A·A

n L-1
Dj~N' LL~
j

NOTES'
1. O1MENSION H APPUES TO ALL LEAOS
2. DIMENSION L APPUES TO LEADS 1
AND 3.
3. DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE AUOWED.
4 DIMENSIONING AND TDLERANCING PER
ANSI Y1UM, 1982.
5 CONTROLLING DIMENSION INCH
-IN

W

DIM
A
l
B
C

o
F
G
H
J
K
L
N
Q

R
S

~

V
Z

1-426

J

~f
I 1"";1r,--~

F-'

lDC--

=l=J

K
I

THERMAL CHARACTERISTICS

Characteristic

wl~

A

Watts

Thermal Resistance, Junction to Case

rB-"

~I-S

MAl
1575
1029
482
089
373
267
279
393
0.36
0.56
12.70 1427
1.14
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.14
1.39

MIN
0575
0380
0160
0025
0142
0.095
0110
0014
0.500
0.045
0.190
0.100
0.080
0.045

I

0.105
0.155
0.022
0562
0055
0210
0.120
0.110
0.055

~:~~ ~:~~ ~:~~~ ~:m
1.14
-

2.03

0.045
-

0.080

STYLE 1
PIN 1 BASE
2 COLLECTOR
3 EMITTER
4 COLLECTOR

CASE 221A-02
(TO-220AB)

D44C Series NPN, D45C Series PNP

I

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

ICES

-

-

10

"A

lEBO

-

-

100

"A

-

-

-

0.5
0.5

-

1.3

OFF CHARACTERISTICS
Collector Cutoff Current
(VCE Rated VCES, VBE

=

=0)

Emitter Cutoff Current
(VEB 5.0 Vde)

=

ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(lc = 1 0 Ade, IB = 50 mAde)
(lc = 1.0 Ade, IB = 100 mAde)

Vde

VCE(sat)
D44C/D45C2,3,5,6,
8,9,11,12
D44C/D45Cl,4,7,10

Base-Emitter Saturation Voltage
(IC = 1.0 Ade, IB = 100 mAde)

VBE(sat)

Vde

DYNAMIC CHARACTERISTICS
Collector Capacitance
(VSB= 10Vde, 1= 1.0MHz)
Gain Bandwidth Product
(IC = 20 mA, VCE = 4.0 Vde, I

pF

Ceb
D44C Series
D45C Senes

-

100
125

-

-

50
40

-

-

100
50

-

-

500
500

-

75
50

-

IT

= 20 MHz)

D44C Senes
D45C Series

MHz

-

SWITCHING TIMES

td + tr

Delay and Rise Times
(IC = 1 0 Ade, IBI = 0.1 Ade)
Storage Time
(lc = 1.0 Ade, IBI = IB2 = 0.1 Ade)

-

'"
a'"
c

40

'"

ffi

'-'

i

30

ns

II

-

D44C Series
D45C Series

-

FIGURE 2 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

200

;;:

ns

D44C Series
D45C Series

FIGURE 1 - DC CURRENT GAIN

100
90
80
70
60
50

-

ts

Fall Time
(IC = 1 0 Ade, IBI = IB2 = 0.1 Ade)

z

ns

D44C Senes
D45C Senes

10
50
'" 3.0
0..
2.0

VCE =1.0 Vde
TJ = 25°C

~

....

-

~

a'"a::

--........
.....

...

- - 045C2,3,5,6,8,9, 11,12

- --044C2,3,5,6,8
I I II
I I
I I
20
0.040.050.07 0.1
0.2 0.3 0.40 5 0.7 1 0
IC, COLLECTOR CURRENT (AMPS)

2.0

"... r- .

~
w

~

-='

3.0 4.0

1-427

~

de

1.0
O. 5 _

0.3
0.2

-

1=

1.0 "s
10 "s
, / 0.1 ms
115..
1.0 ms
~

,,~

TC';; 70°C

f- Duty Cycle';; 50%

O. 1

0.0 5
0 Q3
0.0 2
0.0 1
1.0

044C/45Cl,2,3
044C/45C4,5,6
044C/45C7,8,9
. ~~4f~45Cl~,lliI2
2.0

3.0
5.0 7.0 10
20 30
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

50

70 100

NPN

®

D44E Series
PNP

MOTOROLA

D45E Series

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS

DARLINGTON
10 AMPERE

· .. for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.

COMPLEMENTARY SILICON
POWER TRANSISTORS
40-S0VOLTS
50 WATTS

• Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 V (Max) @ 10 A
•

High DC Current Gain -

•

Complementary Pairs Simplifies Designs'

1000 (Min) @ 5.0 Adc

MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

VCEO

Emitter Base Voltage
Collector Current -

Continuous
Peak(l)

D44E or D45E
1

I

I

2

40l

Unit

3

I SO

60
7.0

Vdc

Ie

10
20

Adc

Po

Total Power Dissipation
@TC=25°C
@TA=25°C

Vdc

VEB

Watts
50
1.67

Operating and Storage Junction
Temperature Range

-55 to 150

TJ,
Tst9

°C

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Thermal Resistance, Junction to Case

R8JC

2.5

. °C/W

Thermal Resistance. Junction to Ambient

R8JA

75

°C/W

TL

275

°c

Maximum Lead Temperature for Soldering
Purposes: 1 IS" from Case for 5 Seconds

Unit

(1) Pulse Width =s;;; 6.0 ms, Dutv C;:vc1e ~ 50%.

NOTES
1. OIM~NS10N H APPUESTO ALL LEADS.

2 DIMENSION L APPLIES TO LEADS 1 AND 3 ONLY.

3. OIMENSION Z OEFINESA ZONE WHERE ALL
8QDYAND LEAD IRREGULARITIES ARE
ALLOWED.

4. OIMENSIONING AND TOLERANCING PER ANSI
Y14.51973.

FIGURE 1 - TYPICAL DC CURRENT GAIN

5. CONTROLLING DIMENSION INCH.

lOOk
VCE - 2.0 Vd.

!

~

=

~

TJ = 150°C (All)
10 k
STYlE 1
PIN 1.
2
3.
4

III
i3

....c

i

loOk
TJ = 25°C (All)
-40°C IPNP)
_40°C INPN)
100
0.002

lUI
0.010.02 0.050.1 0.20.30.5 1.0 2.03.05.0
IC, COLLECTOR CURRENT (AMPS)

10

20

1-428

CASE 221A-02
ITO-220AB)

BASE
COllECTOR
EMITTER
COllECTOR

044E Series NPN. 045 Series PNP

ELECTRICAL CHARACTERISTICS (TC

=25°C unless otherwise noted)

Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE Rated VCEO. VBE

=

'CES

-

-

10

p.A

lEBO

-

-

1.0

p.A

-

-

-

-

1.5
2.0

VBE(sat)

-

2.5

Vde

td + t,

-

0.6

-

p's

ts

-

2.0

-

p's

tf

-

0.5

-

p.s

=0)

Emitter Cutoff Current
(VEB 7.0 Vde)

=

ON CHARACTERISTICS (1)
DC Current Gain
(lc 5.0 Ade. VCE

=

Coliector~Emltter

(lC
(IC

hFE

=5.0 Vde)

Saturation Voltage

Vde

VCE(sat)

=5.0 Ade. 'B =10 mAde)
=10 Ade. 'B =20 mAde)

Base-Emitter Saturation Voltage
(lc 5.0 Ade. 'B 10 mAde)

=

1000

=

DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vde. f test = 1.0 MHz)

D44E Series
D45E Series

SWITCHING CHARACTERISTICS
Delay and Rise Times
(lC =10 Ade. 'Bl 20 mAde)

=

Storage Time
(IC 10 Ade. 'B 1

='B2 =20 mAde)

Fall TIme
(IC 10 Ade. 'Bl

='B2 =20 mAde)

=
=

SAFE OPERATING AREA INFORMATION
FIGURE 2 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA (NPN)

~

FIGURE 3 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA (PNP)

100

100
70
50

3.0

in 30
~ 20

~ 2.0

~:g

t,.)

3.0

::0

----

."Bonding Wire limit
~ 2.0
-de
- - - - - Thermal limit
~ 1.0
Second Breakdown Limit
c5 0.7

;::- 10

! 5.0

10 ms

a 3.0
~ 2.0

~

1.0

S 0.7

~~:~

'-' 05

--

~

- Bonding Wire limit
- Thermal Limit

100

1-429

O. 1
1.0

de~ lE

045El
045E2
045E3

0.2
70

IV VI'

Second Breakdown Limn

EO:3
50

0.1 m;-

- 1.0 ms

a:i 7.0

'/ I'

044El
TC = 25°C
044E2
0.2 Singl. Pulse
044E3
O. 1
2.0 3.0
5.0 7.0 10
20 30
1.0
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)

.......

'"

0.1 ms
1.0 ms
10 ms

.... 10

i

25°C
Single Pulse

TC

2.0

3.0
5.0 7.0 10
20 30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

50

70

100

NPN
D44H Series
PNP
D45H Series

®

MOTOROLA

IIJ
COMPLEMENTARY SILICON POWER TRANSISTORS

10 AMPERE

COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.

•

30-S0VOLTS

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A

•

Fast Switching Speeds

•

Complementary Pairs Simplifies Oesigns

MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

D44Hor D46H

I
I

1,2

VCEO

30

I 7,81 10,11
I 60 1 SO

4,6
45

Unit
Vdc

VES

5.0

Vdc

Collector Current - Continuous
Peak(l)

IC

10
20

Adc

Total Power Dissipation

Po
50
1.67

Watts

-55 to 150

°c

Emitter Base Voltage

@TC:25°C
@TA=25°C

Operating and Storage Junction
Temperature Range

TJ,
Tstg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Thermal Resistance. Junction to Case

R9JC

Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: liS" from Case for 5 Seconds

' Max

Unit

2.5

°C/W

R9JA

75

°C/W

TL

275

°c

11) Pulse Width';; 6.0 ms, Duty Cycl.';; 50%.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic
DC Current Gain
IVCE = 1.0 Vdc, IC = 2.0 Adc)

IVeE = 1.0 Vdc. IC = 4.0 Adc)

Symbol

Min

Max

hFE
044H1.4,7,10
045Hl,4,7,10

35

-

044H2.5,S,11
045H2,5,S,11

60

-

NOTES:
1 DIMENSION H APPLIES TO ALL LEADS
2. DIMENSION L APPLIES TO LEADS 1
AND 3.
3. DIMENSION Z DEFINES A ZONE WHERE
All BODY AND LEAD IRREGULARITIES
ARE ALLOWED.
4. DIMENSIONING AND TDLERANCING PER
ANSI YI4.5M. 19B2
...-_.,..;5",Ci-fD..-;NTROLLING DIMENSION INCH

Unit

DIM

-

A

X

8
C
D
f
G

0095
0110
0014
0.500
0045
0.190
0.100
O.OBO
0.045
0.235
0.000
0.045

H

J

044Hl.4.7.10
045Hl,4.7.10

20

-

044H2.5.S.11
045H2.5.S.11

40

-

K
l

•a
R
S
T

U
V
Z

1-430

2.03

0.620
0405
0190
0.035 STYlE 1.
PIN I. BASE
0147
2. COLLECTOR
0105
3. EMITTER
0155
COLLECTOR
0022
0562
0055
0210 CASE 221A-02
0.120
(TO-220ABI
0.110
0.055
0.255
0.050

..

0.080

D44H Series NPN. D45H Series PNP

III

ELECTRICAL CHARACTERISTICS (TC = 25°C unless olherwise noled)

Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE Raled VCEO. VBE

=

=0)

Emitter Cutoff Current
(VEB 5.0 Vdcl

=

ICES

-

-

10

"A

lEBO

-

-

100

"A

-

-

-

-

1.0
1.0

-

1.5

ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(IC 8.0 Adc. IB 0.4 Adc)
(IC 8.0 Adc. IB 0.8 Adc)

=
=

=
=

Base-Emitter Saturation Voltage
(lc 8.0 Adc. IB 0.8 Adc)

=

Vdc

VCE(sal)
D44H/D45H2.5.8.11
D44H/D45Hl.4. 7.10
V8E(sal)

=

Vdc

DYNAMIC CHARACTERISTICS

Collector Capacitance
(VCB =10 Vdc. f test

Gain Bandwidth Product
(IC 0.5 Adc. VCE 10 Vdc. f

=

=

pF

Ccb

=1.0 MHz)

-

50

40

-

-

-

300
135

-

-

500
500

-

-

140
100

-

-

tr

=20 MHz)

130
230

-

D44H Series
D45H Series

MHz

-

D44H Series
D45H Series

SWITCHING TIMES
Delay and Rise Times
(IC 5.0 Adc. IBI 0.5 Adc)

=

Storage Time
(lc 5.0 Adc. IBI

=

D44H Series
D45H Senes

=182 =0.5 Adc)

D44H Series
D45H Series

=5.0 Adc. IBI =IB2 =0.5 Adc)

D44H Series
D45H Senes

FIGURE 1 I. 5

ffi

14

~

3

LLilli

o

~

z

i
'-'

c

~

D44H Senes

1

~ 10

05

FIGURE 2 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA
100
50
30

1"\

~ 20

1"'-:'\

V

:i!

~

......-

de
1.0 m,

~ 10

'\

08
7

06

-

NORMALIZED DC CURRENT GAIN

LI IIII

os

If

045H Senes

~ 12

ns

Is

Fall Time

(IC

ns

td +tr

=

~

5.0
~ 3.0

e

~

foo ",

2.0 _ TC';; 70°C
f-- Duty Cycle';; 50%

(D',,;

t'.O·,,·,

~

~ 10

B0.5

TJ = 25°C
VCE = 1 0 Vde
hFE @ 4.0 A was used tor normahzlng.

044H/45H1.2
D44H/45H4.5
D44H/45H7.8
D44H/45Hl0.11

E O.3
0.2

O. 1
0.01

,

0.1
1.0
Ie. COLLECTOR CURRENT (AMPS)

10

1-431

1.0

2.0

3.0
5.0 7.0 10
20 30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

50

70

100

NPN
D44VH Series
PNP
D4SVH Series

®

MOTOROLA

15 AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON
POWER TRANSISTORS

These complementary silicon power transistors are designed for
high-speed switching applications. such as switching regulators
and high frequency inverters. The devices are also well-suited for
drivers for high power switching circuits.

30. 45. 60 and SO VOLTS
83 WATTS

• Fast Switching - tf = 90 ns (Max)
• Key Parameters Specified @ lOO·C
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A
• Complementary Pairs Simplify Circuit Designs

MAXIMUM RATINGS
Rating

Symbol

D44VH or D45VH
4

7

10

60

80

Vdc

80

100

Vdc

Collector-Emitter Voltage

VCEO

30

45

Collector-Emitter Voltage

VCEV

50

70

Emitter Base Voltage

VEB

7.0

Vdc

Collector Current - Continuous
Peak (1)

IC
ICM

15
20

Adc

Total Power Dissipation
@TC=25OC
Derete above 25°C

Po

Operating and Storage Junction
Temperature Range

Watts

TJ.
Totg

83
1.67

W/oC

-55 to 150

°C

THERMAL CHARACTERISTICS
•Characteristic

i

o

Unit

1

NOTES

~itfL

Symbol

Max

Unit

R8JC

1.5

°C/W

Thermal Resistance. Junction to Ambient

R8JA

62.5

°C/W

DIM
A

TL

275

°C

B

ES

MAX
0620
0405

~lC~=t~~~~~~0~'9~0

0
0.035 STYLE 1.
f
01
0147
PI. 1. BASE
G
2
0.095 0105
2. COLLECTOR
EMITTER
H
279
0110 0155
COLLECTOR
J
0.36
0014 0022
K 1270
0500 0.562
L
114
0045 0.055
Hl.c+-;4H·8~3+~H-l0H·l~90HO~2~1*,0 CASE 221 A-02
P.~C+""~H.~~:+HlH-l~H.~~~~H~~.~f.l~*-I~ (TO-220AB)
S
1.14
0.045 0.055
T
5.97
0.235 0.255
U
0.00
0.000 0.050
V
1.14
0.045
Z
2.03
0.080
D

(1) Pulse Width .. 6.0 mo. Duty Cycle .. 50%.
Note 1: All polarities are shown for NPN transistors. For PNP transistors. reverse polarities.
Note 2: See MJE5220/5230 Series data sheet for characteristic curves.

1-432

L

Dj':- G

I':""J

1 DIMENSION H APPLIES TO ALL LEADS
2 DIMENSION L APPLIES TO LEADS 1
AND 3
3 DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED
4 DIMENSIONING AND TOlERANCING PER
ANSI Y14 SM. 1982
S CONTROlliNG DIMENSION INCH

Thermal Resistance. Junction to Case

Maximum Lead Temperature for Soldering
Purposes: 1is" from Case for 5 Seconds

tL

1~R

!:

D44VH Series NPN. D45VH Series PNP

elECTRICAL CHARACTERISTICS ITc

I

III

=25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

30
45
60
80

-

-

Unit

OFF CHARACTERISTICS
Colleetor-Emitter Sustaining Voltage 11)
IIC = 25 mAde, IB = 0)

Vde

VCEOlsus)
044VH1,045VHl
044VH4, 045VH4
044VH7, 045VH7
D44VH10,045VH10

Collector-Emitter Cutoff Current

-

!lAde

ICEV

IVCE = Rated VCEV, VBEloff) = 4.0 Vde)
IVCE = Rated VCEV, VBEloff) = 4.0 Vde, TC = 100°C)
Emitter Base Cutoff Current
IVEB = 7.0 Vde, IC = 0)

lEBO

-

-

10
100

-

10

35
20

-

-

-

-

0.4
1.0
0.8
1.5

-

-

1.2
1.0
1.1
1.5

-

50

-

-

120
275

-

-

!lAde

ON CHARACTERISTICS 11)
DC Current Gain
(lc = 2.0 Ade, VCE = 1.0 Vde)
IIC = 4.0 A

1.2

~

0.8

'"
g

'"
§

10
20
50
IC. COLLECTOR CURRENT (mAl

1.0

100

200 300

FIGURE 5 - TEMPERATURE COEFFICIENTS
3.0

100 rnA

c

?

VCE(,,~,-+-t-r-Hiit_ICI'B ~A-ttm-/-=-5.0".c-1-'2"l'0

0.2

FIGURE 4 - COLLECTOR SATURATION REGION
2.0

..

-

i

'~PPli~ t. Ic'lla ~ hF'E,i .
I

"~C f~r VCE:sati

2S·C t. 12S·C

r-.

-550C to 250C
25·C to 12S·C

~ -1.0

!;t

o

_

0.4

'\

o

u

~

>

\

~

,. -2.0 _'VBf.rVBE

1\

~ -3.0

i

0
0.01 0.02

0.05 0.1

0.2

0.5

1.0

2.0

5.0

10

20

SO

100

-55 to 25°&

I

-4.0
1.0

I

I

Lj

5.0
10
3.0
IC. COLLECTOR CURRENT (rnA)

'B. BASE CURRENT (mAl

30

100

SO

FIGURE 6 - THERMAL RESPONSE
1.0

0.7
0.5

~~

~~
....
.... '"
0

ffi~

0.3

0.2

D·D.s

r-

....

~
0.1

....b;;;jj

0.2

~

,

po

I

0.1
10,05

I

I

-

-t

-

I

inw

:i ~ 0,07

Single ulse

~~~ 0.05

:g~ 0.03 ~
0.02

Duty Cycle, D '" tl/12

0.05

0.1

0.2

0.5

1.0

2.0

I

ZOJA{t)' r{t! R'JA
R.JA • 62.!i.·C/W Max

P{pkl

.0.01
0.02

!

:Ef1Jl ---t\;-J

SmglePulse

0.2
0.01

''1'"
0.01

I

z"JC{t! - r{tl R~JC
R'JC • 12.S.C/W Max

5.0

10

20
t. TIME

50
{m~

1-436

100

200

500

1.0 k

2.0 k

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT 1i
TJ{pk) -TC • P{pkl R'Jc{tl
5.0 k 10 k

20 k

50 k 100 k

®

MOTOROLA

NPN

PNP

MDS26
MDS27

MDS76
MDS77

DUOWATT
3.0 AMPERE

COMPLEMENTARY PLASTIC SILICON
POWER TRANSISTORS

COMPLEMENTARY SILICON
POWER TRANSISTORS

• designed for low power audio amplifier and low current, high
speed switching applications.
•

Coliector·Emitter Sustaining Voltage VCEO(sus) = 40 Vdc - MDS26, MDS76
=60 Vdc - MDS27, MDSn

•

DC Current Gain hFE =40 (Min) @ Ie =0.2 Adc
=30 (Min) @ IC = 1.0 Adc

•

Current·Gain - Bandwidth Product fT =50 MHz (Min) @ IC = 100 mAdc

•

Annular Construction for Low Leakages ICBO = 100 nA (Max) @ Rated VCB

40,60 VOLTS
10 WATTS

Tab forming and TO-5 lead forming available on

special raqua.t.

tfo'

MAXIMUM RATINGS
MOS26
MOS76

MOS27
MOS77

Unit

VCB

60

80

Vdc

VCEO

40

60

Vdc

Svmbol

Rating

Collector· Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous

VEB

-7.0-

Vdc

IC

-3.0-5.0-

Adc

IB

1.0-

Po

2.0-0.016_12.5_
-100-65 to +150_
_

Peak
Base Current
Total Device Dissipation @ T A
Derate above 2SoC

25°C

Total Device Dissipation @ T C = 25°C

Po

Derate above 25°C
Operating and Storage Junction

TJ,Tstg

mW/DC

°c

THERMAL CHARACTERISTICS
Svmbol

Max

Unit

Thermal Resistance, Junction to Case

9JC

10

°C/W

Thermal Resistance, Junction to

9JA

62.6

°C/W

Ambient

D~
~STYLE3'
-I

Adc

Temperature Range

Characteristic

~
11 f

Watts
W/oC
Watts

r

0.-/

--G
N

l

r

PIN 1. 8ASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

g 1
~ -.J

-=tJ

MILLIMETERS
DIM MIN MAX
A 21.84 22.35
B
9.91 10.41
4.39
4.65
C
0.74
0.58
0
4.06
F
3.56
2.41
2.67
G
H
1.70
1.96
0.48
0.66
J
K
12.19 12.95
L
1.65
2.03
N
9.91 10.16
Q
3.56
3.81
1.07
1.75
R
7.87 9.14
T

INCHES
MIN MAX
0.860 0.880
0.390 0.410
0.173 0183
0.023 0.029
0.140 0160
0.095 0.105
0.067 0.077
0.019 0.026
0.480 0.510
0.065 0.080
0.390 0.400
0.140 0.150
0.042 0.069
0.310 0.360

CASE 306·04
TD·202AC

1-437

..

MDS26, MDS27NPN/MDS76, MDS77PNP

ELECTRICAL CHARACTERISTICS (Tc = 25°C unle.. otherwise noted)
Symbol

Characteristic

Min

Max

40
60

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

(lC

= 10 mAde, IB = 0)

Vde

VCEO(sus)
MDS26,MDS76
MDS27,MDS77

Collector Cutoff Current

ICBO

I'Ade

(VCB
(VCB

= 60 Vde,
=80 Vde,

= 0)
= 0)

MDS26,MDS76
MElS27,MDS77

-

0.1
0.1

(VCB
(VCB

=60 Vde,lE =0, TC = 125°C)
= 80 Vde, IE =0, TC = 125°C)

MDS26,MDS76
MDS27,MDS77

-

-

0.1
0.1

-

0.1

40

200

30

-

-

0.3
0.6
1.7

IE
IE

mAde

Emitter Cutoff Current

(VSE

= 7.0 Vde,

IC

lEBO

= 0)

I'Ade

ON CHARACTERISTICS (1)
DC Current Gain

(lC
(lc

Collector-E mitter Saturation Voltage

VCE(sat)

(lc = 200 mAde, IB = 20 mAde)
(lC = 1.0 Ade, 18 = 100 mAde)
(lC - 3.0 Ado, IB = 600 mAde)

Base-Emitter Saturation Voltage

VCE

Vde

-

Base-Emitter On Voltage

= 500 mAde,

Vde

VBE(satl

(lC = 2.0 Ade,IS = 200 mAde)

(lC

-

hFE

= 200 mAde, VCE = 1.0 Vde)
= 1.0 Ade, VCE - 1.0 Vde)

VSE(on)

= 1.0 Vde)

1.8
Vde

-

1.5

50

-

-

50
70

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 100 mAde, VCE = 10 Vde, I test
Output Capacitance

(VCB

= 10 Vde,

IE

= 0, I = 0.1

Cob
MHz)

MDS26, MDS27
MDS76, MDS77

pF

-

(1) Pul.e Test: Pul.e Width <; 300 1'5, Duty Cycle <; 2.0%

(2) IT

MHz

IT

= 10 MHz)

= Ihie I. I test

1-438

MDS60

®

MOTOROLA

l1li

PNP SILICON ANNULAR TRANSISTOR
DUOWATT
. designed for general-purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance.
•

PNP SILICON
HIGH VOLTAGE
TRANSISTOR

Complement to NPN Type 2N6558

MAXIMUM RATINGS
Symbol

V ....

Unit

Vceo

300

Vdc

Collector-Base Voltage

Vca

Vdc

Emitter-Base Voltage

VEa

300
5.0

Collector Current - Continuous

IC

500

mAde

Total POlN8r DISSipation 0 T A - 2SoC
Derate aboVtl 25°C

Po

mWfOC

Po

2.0
16
10
BO

Watts
mWf'C

TJ,Tstg

-55 to+1SO

"C

Rating
Collector-Emitter Voltage

Total Power Diuipation" TC - 2SoC
Derete above 2SoC
Operating and Storage Junction
Temperature Range

Vdc

Won

THERMAL CHARACTERISTICS
Ch.r.teristic
L
Thermal Reslstence, Junction to Case
I Thermal Resistance, Junction to Ambient

Symbol

L

8JC
8JA

I

Ma.
12.5
62.5

1

Unit

I

°C/W

a

C/W

I

ELECTRICAL CHARACTERISTICS (T A" 25°C unless otherwise noted)
Ch.'~ristic

Sy.....

Min

Mo.

Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown VOltage(1)

300

Coliector·Base Breakdown Voltage
(Ie = 100 "Adc, Ie = 01

BVCBO

Emltter·Base Breakdown Voltage
(Ie = 10 "Ade. Ie '" 01
Collector Cutoff Current
(Vca = 200 Vde, IE '" 0)

BVEBO

Emitter Cutoff Current
IVSE = 3.0 Vde, IC = 0)

Vdc

8VCEO

lie'" 1 o mAde, Is =01

Vde

300
Vde

5.0
,.Ade

ICBO

0.2
"Ade

IESO

0.1

ON CHARACTERISTICS
DC Current Gam
tiC s 1.0 mAde, VCE '" 10 Vdel
IIC s 10 mAde, VCE = 10Vdcl

-FE

25
30

30

(lC "'30 mAde, VCE '" 10Vdel
Collector·EmltterSaturatlon Voltage
IIC = 30 mAde, IS '"' 3.0 mAde)
Base-Emitter Saturation Voltage
lie = 30 mAde, IB = 3.0 mAde)

Vde

VCE{sad
0.75

o.

VBEtsad

Vde

STYLE l'
PIN 1. EMITTER
2. BASE
3. COLLECTOR
4. COLLECTOR
INCHES
MILLIMETERS
MIN
DIM MIN
MAX
MAX
A 2184 22 35 0860 0880
991 10 41
8
I~
439
0183
C
4.65
074 0023 0029
0
058
406 0140 0160
~241
267
G ~
~~ 0077
170 196- 0067 ~
J
04s 0.66 0019' 0026
K 1219 i29'S 0480
-~
165
L
203 0065 0080
N
991 1016 0390 0400
Q
3.56
3.81 0.140 0.150
1.07
1.75 0.042 0.069
R
7.S7
9.14 0.310 0.360
T

}~

+

DYNAMIC CHARACTERISTICS
Current-Galn-Bandwidth Product
(Ie = 10 mAde, VeE = 20 Vde, f:. 10 MHzl

f,-

Collector·Base Capacitance
{Vea =20Vde,IE =0, f = 1.0 MHz)

Ceb

MHz

45

pF

8.0

(1) Pulse Test: Pulse Width" 300 ,,5, Duty Cycle" 2%.

CASE 306-04
TO·202 AC

1-439

MOS60

OJ
FIGURE 1 - DC CURRENT GAIN
150

V~E' \0 vIc

TJ '" +125 0C

I

100

~+250C

0

~

0 _ - 5 5 0C

.......

....... ~

1'\

0

~~

'\.:

"' '\

20

15
1.0

2.0

5.0

3.0

10

7.0

20

50

30

80

"'

100

IC, COLLECTOR CURRENT (mAl

FIGURE 2 -CAPACITANCES

FIGURE 3 -CURRENT·GAIN-BANDWIDTH PRODUCT
0

100

TJ'250C
-VCE' 20 Vdc

"\

0
C,b

-

0
0

0

/

:\

/'

.........

0/

0

0

i

2. 0

r-

1. 0

01

0.2

05

1.0

2.0

50

10

20

50

Crb l

100 200

0
10

500 1000

50

20

FIGURE 5 - DC SAFE OPERATING AREA

FIGURE 4 - "ON" VOL TAGES

8

~o
~

500

II
II

-

--

V8~ @J CE (, 10 ~

-

O. 6

'"

~>

>.

1

--

~

;

0
1.0

II II
2.0

5.0

10

!2

=10

'-"""
20

.....
.....

200

I~

100

l'o...

13

'"o

VCE(;'!I@IC/18

Jli0

t-

O. 4

2

100

50

20

IC, COLLECTOR CU~RENT (mAl

VR, REVERSE VOLTAGE (VOLTSI

0

10

50

100

0
TJ'IS00C
- - - SECOND 8REAKOOWN LIMITED
0 - BONDING WIRE LIMITED
- - - THERMALLYlIMITEO@TC'250C
0
0

50

20

30

50

70

100

200

VCE, COLLECTOR·EMITTER VOLTAGE (VOL TSI

IC, COLLECTOR CURRENT (mAl

1-440

300

400

®

M051678
MOTOROLA

r--------,III
NPN SILICON ANNULAR RF TRANSISTOR

DUOWATT
4W-27MHz

· .. designed for use in Citizen-band and other high-frequency
communications equipment operating to 30 MHz. Higher breakdown
voltages allow a high percentage of up-modulation in AM circuits.

RF POWER OUTPUT
TRANSISTOR
NPN SILICON

•

Output Power = 4 W (Min) @ VCC = 12 Vdc

•

Power Gain

•

High Collector-Emitter Breakdown Voltage - BVCER ;;;. 65 Vdc

= 10 dB (Min)

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Base Voltage

VCBO

65

Vdc

Collector-Emitter Voltage

VCER

65

Vdc

Emitter-Base Voltage

VEBO
IC

4

Vdc

3

Adc

Po

2
16

Watt
mW/oC

Po

10
80

mW/oC

-55 to +150

°c

Rating

Collector Current - Continuous
Total Power DIssipation @ T A - 2SoC

Derate above 2SoC
Total Power Dissipation @ T C - 2SoC
Derate above 2SoC
Operatmg and Storage Junction

TJ. T stg

Temperature Range

Thermal Relstance, Junction to Case
Thermal Resistance, Junction to Ambient

I

Symbol

I

I

eJC

I

I

eJA

I

a1~b$'j

Watt

THERMAL CHARACTERISTICS
Characteristic

Tab-forming and TO-S lead-forming
available on special request.

Max

12.5
62.5

I
I

I

Unit
°C/W
°C/W

!

.,~,'_ b]
b; iI
2 COLLECTOR
3
EMITTER

K

4 COLLECTOR Djl-~_G L
R

IN-hl

L~..J

r~-=tJ

FIGURE 1 - POWER GAIN
10

........

--- --

DIM
A

8
C
D

~G
H
J
K

I---

L
N

CIRCUIT TUNED @P,,"0.15W
VCC" 11 Vdc

f"y

MHz

I

Q

R
T

1

0.1

0.1

0.3

0.5

MILLIMETERS
MIN
MAX
11.84 1135
991 1041
4.39
4.65
074
0.58
4.06
356
141
1.67
170
196
066
048
11.19 1195
165
1.03
9.91 10.16
3.56
3.81
1.07
1.75
7.87
9.14

INCHES
MIN MAX
0.860 0880
0390 0410
0173 0.183
0.013 0019
0140 0160
0095 0.105
0.067 0077
0.019 0.016
0480 0510
0.065 0080
0390 0.400
0140 0.150
0.041 0.069
0.310 0.360

0.7
CASE 308-04

Pin. INPUT POWER IWATTS)

TO-202AC

1-441

MDS1678

ELECTRICAL CHARACTERISTICS (T A = 25°C

unless otherwise noted)
Symbol

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage (1)
(lC = 10mAdc, RBE = IOn)

BVCER

65

-

-

Vde

Emitter-Base Breakdown Voltage

BVEBO

4

ICBO

-

-

0.01

15
10

-

-

Characteristic

III

OFF CHARACTERISTICS

Vdc

(IE = 1 mAde, IC = 0)

Collector Cutoff Current

mAde

(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (2)
(lC = 500 mAde, VCE = 5 Vdc)
(lC = 1.5 Adc, VCE = 5 Vdc)

hFE

-

VCE(satl

-

-

Cob

-

-

fT

100

Common-Emitter Amplifier Power Gain
(Pout = 4 W, VCC = 12 Vdc, I = 27 MHz)

GpE

10

-

-

dB

Output Power

Pout

4

-

-

Watts

~

-

70

-

%

Collector-Emitter Saturation Voltage

1

Vdc

45

pF

(lC = 500 mAde, IB = 50 mAde)
DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB = 12 Vde, IE = 0, f = 1 MHz)

Current-Gain

Bandwidth Product
(lC = 100 mAde, VCE = 5 Vdc, 1= 20 MHz)

MHz

FUNCTIONAL TEST (FIgure 1)

(Pin = 400 mW, VCC = 12 Vde, f = 27 MHz)
Collector Efficiency (3)
(Pout = 4 W, VCC = 12 Vdc, f = 27 MHz)
Percentage Up-Modulation (4)
(I = 27 MHz)

85

%

(1) Pulsed through a 25 mH Inductor.
(2) Pulse Test: Pulse Width';; 300 I'S, Duty Cycle';; 2.0%.

(3)~=

RFPout .100
(VCC)(lC)

(4) Percentage Up-Modulation is measured in the test circuit (Figure 3) by setting the Carrier Power (Pel to 4 Watts with Vee = 12 Vdc and
noting t~e power input. Then the Peak Envelope Power (PEP) is noted after doubling the origmal power input to simulate driver modulation
(at a 25% dUty cycle for thermal considerations) and raising the Vee to 24 Vdc (to simulate the modulating voltage). Percentage UpModulation is then determined by the relation:
Percentage Up·Modulation

C1. C2 - 9.0-180 pF ARCO 463 or equivalent
C3. C4 - 4.0-80 pF ARCa 462 or equivalent
C5 - 0.02 J.LF ceramic disc
C6 - 0.1 ,uF ceramic disc
RFC1 - 4 turns #30 enameled wire wound on ferroxcube bead
tYpe 56-590-65/38
RFC2 - 26 Turns #22 enameled wire (2 layers-13 turns each
layer) 1/4" inner diameter
L 1 - 0.22 ,uH molded choke
L2 - 0.68,uH molded choke

FIGURE 2 - OUTPUT POWER WITH Vee VARIATIONS
30

~
....

DUTY CYCLE = 25%
f= 27 MHz

<

~

'"~

~
>=>

p,::±-

I- ~IRCUIT TlINED@VCC = 24 V. Pon = 0.2 W

20

/'

10

./
./

I!:
=>

//

<:>

~ v
,.~ ."..,

.P

:::::;

~

~ [(Pp~P) 1/2 -1] .100

or

--::7."..

FIGURE 3 - 27 MHz TEST CIRCUIT

0.2W-

...Input

3
10

14

18

22

26

Vec, COLLECTOR SUPPLY VOLTAGE (VOLlS)

1-442

C1

®

MJ410
MJ411

MOTOROLA

II.

HIGH VOLTAGE NPN SILICON TRANSISTORS
. designed for medium to high voltage inverters, converters,
regulators and switching circuits.
•

High Collector· Emitter Voltage VCEO = 200 Volts - MJ410
300 Volts - MJ411

POWER TRANSISTORS
NPN SILICON
200-300 VOLTS
100 WATTS

1.0 and 2.5 Adc

•

DC Current Gain Specified

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 0.8 Vdc @ IC = 1.0 Adc

@

5 AMPERE

MAXIMUM RATINGS
Rating

I
I

Symbol

MJ410

VCEO

200

Collector-Base Voltage

VCB

200

Emitter-Base Voltage

VEB

50

Vdc

IC

5.0
10

Adc

2.0

Adc

Collector-Emitter Voltage

Collector Current - Continuous

Peak
Base Current

'B

Total Device Dlssipation@Tc==7SoC
Derate above 75°C

Unit

300

Vdc

300

Vdc

100
133

-65 to +150

Operating Junction Temperature Range
Storage Temperature Range

I

MJ411

Lr~
r~K

-65 to +200

T stg

THERMAL CHARACTERISTICS
Characteristic

Max

Thermal Resistance, Junction to Case

ESEATlN!~

0.75

I

PLANE

ELECTRICAL CHARACTERISTICS (TC "" 2SoC unless otherWise noted)

I

I Symbol I Min I

Characteristic

Max

Unit

OFF CHARACTERISTICS
!collector-Emitter Sustaining Voltage
(Ie'" 100 mAde, [s '" 01

Vdc

VCEO(sus)

200
300

MJ410
MJ411

mAdc

Collector Cutoff Current
(VCE = 200 Vdc, 'S = 0)

MJ410

0.25

(VeE = 300 Vdc, 'B '" 0)

MJ411

0.25

'CEO

Follector Cutoff Current
(VCE = 200 Vdc, VEB(off) = 1.5 Vdc,
TC'" 125°C)

MJ410

0.5

(VCE =300 Vdc, VEB{off} -1.5 Vdc,

MJ411

05

TC

=

mAdc

'CEX

STYlE 1.
PIN 1 BASE

2.EMITIER
CASE. COLLECTOR

125°C)

Emitter Cutoff Current
(VEB '" 5.0 Vdc, IC '" 0)

5.0

'EBO

ON CHARACTERISTICS

MILLIMETERS
MIN MAX

A
B
C 6.35
D 0.99
E
F 29.90
G 10.67
H 5.33
J 16.64
K 11.18
Q
3.B4
R

-

30
10

HC = 2.5 Adc, VCE = 5.0 Vdc)

"a" IS DlA.

mAdc

DIM

DC Current Gam
(lc'" 1.0 Adc, VCE = 5.0 Vdc)

NOTE:
1. DIM

90

-

Collector-Emitter Saturation Voltage
(lc'" 1.0 Adc, Ie '" 0.1 Adc)

VCE{sat)

0.8

Vdc

Base-Emitter Saturation Voltage
(Ie = 1.0 Adc:, Ie = 0.1 Adc)

VSE(sat)

1.2

Vdc

-

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 200 mAdc, VCE = 10 Vdc,
f= 1.0MHz)

39.37
21.08
7.62
109
3.43
30.40
11.18
5.59
17.15
12.19

'.OS

26.67

INCHES
MIN
MAX

0.250
0.039
1.177
0.420
0.210
0.655
0.440
0.151

-

CASE 11-01
TO-3

1-443

1.560
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

MJ410, MJ411

FIGURE 1 -ACTIVE REGION SAFE OPERATING AREA

10
0

,.
:;;

2. 0

I-

1. 0

ii:

~

There are two limitations on the power handling ability of a
transistor' junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation, i.e., the transistor must not
be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150°C; T C IS vanable
depending on conditions. Pulse curves are valid for duty cycles of
10% provided TJ{pk)~ 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than th~ limitations Imposed by secondary breakdown.

de
O. 5

=>

u

~

O. 2

0

~

H-----Secondary Breakdown LImited
r-_ _ _ _
Wire Limited
~onding

- - - - - - Thermal limitatIon at TC 15 0C
Curves Apply Below Rated VCEO
0::

O. 1

80.0 5
~

rt==Fq-H

MJ410_
0.02H+t+-t---t---i-t-t-H-t

0.01.~-1-L..U,.-_-::'::_-1..-...J...-::'::-1-L..L-':-:'::,.-_-±,----'--,-::::!

5.0

10

20

50

100

200

500

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 - "ON" VOLTAGES

20

100
0

TJ

50

I"

..... 25°C

./

"'

........

V I-""

0

16
~ VCE

"

....- I--'
l--- ~

0

~

2:

I

'"
~
o

~

VBE(sa,)@ICIIB= 10
O. B

+--

I

04

IL r--/

>

.,;

TJ = 1500C",~

7.0

biJIlB = 110
~I

12

w

'"

f"1\

i-"" -550C

JcEI("I,

0;

= 5.0 Vde

I

ill

TJ = 25°C

I

0

III

150°C

j,?-r~

If 1 1 L

o
0.2

0.1

03

10

0.5

2.0

30

0.05

50

0.1

02

03

0.5

1.0

20

FIGURE 4-SUSTAINING VOLTAGE TEST LOAD LINE

FIGURE 5 -SUSTAINING VOLTAGE TEST CIRCUIT

500
50 mH
400

I-

~
~

".~l

300

13
~

0

~
8

200

-

VCEO(sus) IS ACCEPTABLE WHEN
VCE > RATED VCEO. AT IC = 100 mA

~ 100

o
o

MJ4\0MJ411
100

200

""'"

\

-=- S.O V

,

\

300 !2
300

30

IC. COLLECTOR CURRENT (AMP)

IC. COLLECTOR CURRENT (AMP)

.§.

II

VCE(",)@ICIIB=5

50
0.05

:<

V

II

400

500

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-444

1.0 !2

5.0

®

MJ413
MJ423
MJ431

MOTOROLA

HIGH-VOLTAGE NPN SILICON TRANSISTORS

10 AMPERE
POWER TRANSISTORS
NPN SILICON

. . . designed for medium-to-high voltage inverters,
converters, regulators and switching circuits.
• High Voltage -

V CEX

= 400 Vdc

400 VOLTS
125 WATTS

• Gain Specified to 3.5 Amp
• High Frequency Response to 2.5 MHz

MAXIMUM RATINGS

Symbol

Rating
I,.;OJ.1ector-D&8e Vottage

CB
VES

Emitter-Baae Voltage
Col ector CUrrent

Ml413

VCEX

Collector-Emitter Voltage

Continuous

Base Current

T~:~~~~r.~on U TC = 25 C
Operattoo Junction Temperature Rance
Storage Temperature Range

M1423

Ml431

Unit

- ... ...

Vde

Ade:

400

400

400

4..,

4..,

Vdc

vae

•• D

IC

'D

'D

'D

's

2.0

2.0

2.0

Ade

PD

;~~

;i~

TJ

-65 to +150
-6. to

·C

.2..,

T._

-C

THERMAL CHARACTERISTICS

Characteristic

Max
1.0

Thermal Resistance. Junction to CUe

ELECTRICAL CHARACTERISTICS

(Tc=2S"Cunll •• GthtlIWlUnoted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter SUstaining Voltage, 1)
Oc = 100 mAde,
= 01

BVCEO(8ua)

's

Collector Cutoff Current
(YCE " 400 Vde, VEB(ofl)" 1. 5 Vckt
(VCEo 400 Vde, VEB(ofl)' 1.5 Vdc,
TC"" 125·C)
Emitter Cutoff Current
(YBE" •. 0 Vdc, IC' 01

MJ... 13, MJ423
MJ431
MJ413, MJ423
MJ431
MJ413. MJQ3

-

3.5

mAde

---

D•••
2.5
0.5
5.0

':sao

--

5.0
2.0

hFE

20

eo

CElt

M.J431

Vde

Lr~
r~K
ESEATIN/~
PLANE

IDAde

mAde

ON CHARACTERlmCS
DC Current Gain 11)
0C· 0.5Adc, VeE' 5.0 Vdel

MJ413

OC" 1.0 Adc, VCB " 5.0 Vdcl

-

15

= 1.0 Adc, VCE =5.0 Vdcl
(Ie"" 2.5 Adc, VCE "" 5.0 Vdc)

Oe

M.J423

30
10

90

0c' 2.5 Adc, VeE =5.0 Vdcl
Oc = 3 •• Adc, VeE = 5.0 Vdcl

MJ431

I.

35

CoUector-EmJtter Saturation Voltage 111
0.5 Adc,
0.05 Adcl

Oe •

Oc " 1.0 Adc,

Oe - 1.5 Adc,

's •
's' o. 10 Adcl
's - O. 5 Adcl

Bue-Emltter SaturaUOIl Voltlge't'l
0.5 Adc,
0.05 ~I
1. 0 Ade,
O. 1 Adcl
1.5 Adc,
o. 5 Adcl

Oe'
Oe Oe -

's 's 's'

p-

-

MJ413
MJ423
MJ431
MJ413
MJ423
M.J431

VBE(sat)

-

-

I
.

Oe -

I1IPW .. 300

~',

-

0.6

A
8
C
D
E
F

0.7

G 10.

Vdc
0.8

Vdc
1.25
1.15
I .•

J

K

n
R

6.3
0.99

-

9.90
.3
6.84
1.18
3.14

-

39.31
21.08
1.6
1.09
3.43
31UO
11.18
5.
11.15
12.19
4.09
2181

I I
u

Dutr C,.,lo .. 1.0'1.

1-445

INCHES
MIN
X

-

O.
0.039

-

1.117
0·420
1
0.855
0.440
0.151

CASE 11·01
TO.:!

DYNAMIC CHARACTERlmCS

CU......-GaIn - 200 mAde, VCB • 10Vdc,
I- 1.0 IOIaI

STYlE I,
PIN I. BASE
2.EMlnER
CASE, COLLECTOR
MILLIME ERS
DIM MIN MAX

-

10
VCE(sat)

-

1.550
0.830
0.043
0.135
1.191

0.44CJ
0.2
0.815
0.480
0.181
1.050

I

MJ413, MJ423, MJ431

FIGURE 1- ACTIVE·REGIDN SAFE-GPERATING AHQ

FIGURE 2 - POWER·TEMPERATURE DERATING CURVE

10

125

"\.

loo~

'\;:

TJ-=15lrC
~:-SfCCIfIlARYIII£.AKI)OWWlIMITATION
- - THERMAL LIMITATtON AT Tc = 25"<:

1.0ms

'\
I"\.

5

CBASl.£MITTEROISSIPATlON IS

PlRtlPTI8U"""" Ie - 5 AIIPI.
The SIte Opel'ltJna Are. Curws Indl-

de

tlttlc-ValllllHsbe\olJliwhlctlthedftlct

"\

I\,

wilinolefllersecondlrytlre.kdownCol·

1:: ;::O;i:n I:,:~=~: s~~~Zen::!

WOIdCMISIIII.Qtasb'ophK:flllul'e To
Insurt opmtlon below tile II1II1liliiii TJ,

"\

o

.. 25

power-Iemper,ture deutlnr must be

"\.

obsmed 101' both stelidy state lflii pulse
powercondltlOftS

0.0 I
1.0

o
o

U.

2.0

4.0 6.0

10

20

40 60

100

200

400

1000

20

ro

40

ro

~

~

"

~

Te. CASE TEMPERATURE ('C)

Ve •• COLLECTOR·EMITIER VOlTAGE (VOLTS)

~

~

m

FIGURE 4 - SUSTAINING VOLTAGE TEST CIRCUIT

FIGURE 3 - SUSTAINING VOLTAGE TEST LOAD LINE
500

50 mHy

.......

IS ACe PTABL£ WHEN
r- r- VelOl.n)
Ve• ;,. 32S VAT Ie - 100 mA

\
f\

,

\

I

l
200

100

LOR

300R

300

400

500

Veo. COllECTOR·EMmER VOLTAGE !VOlTS)

FIGURE 6- TRANSCONDUCTANCE

FIGURE 5- CURRENT GAIN
100
70
50

i

IS
~

VeE" 5.0 V

.....

30

~

~ 3.0

I

"

20

IS
~
""

TJ-loo'C" ~5'C

10

S.O
3.0

.Ji O.3

2.0

O.2

1.~.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

Ie. COlLECTOR CURt!£NT lAMP)

~.

2.0

I.0
~ O.7
~ O.S

:5 7.0

i

10
7.0
S.0

I

Ve.- IOY

2S'C

TJ "" 100'C

.I

II
O.S

1.0

I.S

V.. BASEa!1TTER VOlTAGE MIlTS)

1-446

2.0

2.5

MJ802

®

MOTOROLA

30 AMPERE
POWER TRANSISTOR
HIGH-POWER NPN SILICON TRANSISTOR

NPN SILICON
100 VOLTS
200 WATTS

· .. for use as an output device in complementary audio amplifiers to
1DO-Watts music power per channel.

•

High DC Current Gain - hFE = 25-100@ IC = 7.5 A

•

Excellent Safe Operating Area

• Complement to the PNP MJ4502

MAXIMUM RATINGS
Rating
Coliector~Emitter

Voltage

Collector·Ba.. Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current

Base Current

Symbol

Value

Unit

VeER
VeB
VeEO
VEe
Ie
Ie

100
100
90
4.0
30
7.5
200
1.14

Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
wIDe
De

Po

Total Device Dissipation@Tc== 25°C

Derate above 2So C
Operating and Storage Junction

TJ. T stg

-65 to +200

Lr~
r~,
ES:::t:
PLANE

i

Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

DIM

FIGURE 1 - POWER·TEMPERATURE DERATING eURVE
200

i

..........

150

A

~ ........
..........

z

<:>

~
ill

100

i5

...~;:'"

e

~

..............

I'-......
o

20

40

60

80
100
120
TC. CASE TEMPERATURE (OC)

140

-

-

6.35
0.99

29.90
10.67
5.33
16.64
11.18
Q
3.84
R

" '~

50

o

8
C
D
E
F
G
H
J
K

MILLIMETERS
MIN MAX

160

1-447

~200

180

39.37
21.08
7.62
1.09
3.43
30.40
11.18
5.59
17.15
12.19
4.09
26.67

NOTE:
1. DIM "O"IS OIA.

INCHES
MIN
MAX
0.250
0.039

..

1.177
0.420
0.210
0.655
0.440
0.151

-

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

CASE 11·01
TO·3

MJ802

ELECTRICAL CHARACTERISTICS (TC

2SOC unless otherwise noted)

&

Characteristic

Symbol

Min

Max

Unit

100

-

Vde

90

-

Vde

-

1.0
5.0

OFF CHARACTERISTICS
COllector-Emitter Breakdown Voltage (1)

SVCER

IIc = 200 mAde, RSE = 100 Ohms)

Collector-Emitter Sustaining Voltage' 1)
II C = 200 mAde)

VCEO(sus)

Collector-Base Cutoff Current
(VCS = 100 Vde, IE = D)
(VCS = 100 Vde, IE = 0, TC = 150°C)

ICSO

Emitter-Base Cutoff Current

IESO

-

1.0

DC Current Gain CU
(lC = 7.5 Ade, VCE = 2.0 Vde)

hFE

25

100

Base-Emitter "On" Voltage
IIc = 7.5 Ade, VCE = 2.0 Vde)

VSE(on)

1.3

Vde

Collector-Emitter Saturation Voltage
IIc = 7.5 Ade, IR = 0.75 Adel

VCE(sat)

0.8

Vde

Base-Emitter Saturation Voltage
IIC = 7.5 Ade, IS = 0.75 Ade)

VSE(sat)

1.3

Vde

mAde

mAde

(VSE = 4.0 Vde, IC = 0)
ON CHARACTERISTICS (1)

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product
IIc = 1.0 Ade, VCE = 10 Vde, f
111

Pulse Test: Pulse

Width~

= 1.0 MHz)

300 IJs, Out.... Cycle

~

2.0%.

FIGURE 3 - "ON" VOLTAGES

FIGURE 2 - DC CURRENT GAIN
2.0

I

1.8

T)2JoJ

1.6

~0

1.4

2- 1.2

'/

w

'"~
0

>

if'
;

-

0.2

HH-#f#

1.0
VaE(sat)@lclla= 10

0.8

Ifii

0.6

Data shown is obtained from pulse tests+-1+H-I+--l~~~

cn

IIII

0.2

II I

VCE(sat)@lc/la- 10

o

0.1 ':::::-';;";;;!U..!.!:,:--'-::'::'::'::-'-::';.LJ...L7':--'-:'::-'-:!-::-"-:,::'-'-''-':'=---1..-:!::-~
0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (AMP)

-

VaE @VCE = 2.0 V

0.4

ant ajiUiid tt IUIIi;~ iffeCl t' i

I

0.03 0.05

0.1

-

-

II

~

0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)

~

/

10

20 30

FIGURE 4 - ACTIVE REGION SAFE OPERATING AREA
100

,

50

a:
::;;
!! 20

....
ffi
'"
'":::>

'"'"
0

~....

10
5.0

f-- TJ = 2000C

1.0

E--- Secondary Breakdown Limited

0.5

-

-

......... 100 pi 1.0ms

......
r-..

5.0

2.0

0

'"
~

-to

~ =-_:.-: ~~~:~':I ~~~:~i~:~C
f==:
S
Pulse Duty Cycle

m.

"

The Safe Op8f8ting Am Curves indicate Ie - VeE limits below
which the device will not enter secondary breakdown. Collector
Ioed lines for speclfh: circuits must fEl11 within the applicable Safe
Area to avoid causing iii catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must ba ob.1Ved for both steady state and puis. power conditions.

=250C

10%

0.2
0.1
1.0

2.0

3.0

5.0
10
20
30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1-448

50

100

®

MJ900, MJ901 PNP
MJ1000, MJ100l NPN

MOTOROLA

8,0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON

MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS
___ for use as output devices in complementary general purpose
amplifier applications_
•

High DC Current Gain - hFE = 6000 (Typ)

•

Monolithic Construction with Built-I n Base-Emitter
Shunt Resistors

@

60-80 VOLTS
90 WATTS

IC = 3.0 Adc

MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

MJ900
MJ901
MJ1000 MJ100t

Unit

VeEO

60

80

Vdc

Collector-Base Voltage

Vee

60

80

Vdc

Emitter-Base Voltage

VEe

5.0

Vdc

Ie

80
0.1

Adc

Collector Current
Sase Current

Ie

Total Device Dissipation @TC = 2SoC

PD

90
0.515

Watts

TJ,Tstg

-55 to +200

°e

Derate above 2SoC
Operating and Storage Junction

Adc

Lr~
r~K

wloe

Temperature Range

ESEATlN!-~

THERMAL CHARACTERISTICS

I

PLANE

Characteristic
Thermal Resistance, Junction to Case

FIGURE 1- DARLINGTON CIRCUIT SCHEMATIC

PNP

MJ900
MJ901

Collector

---,
r---~f---,

I

I
I
I
I
I
I

Base

NPN
MJIOOO
MJIOOI

STYLE I:
PIN I. BASE
2. EMITTER
CASE: COLLECTOR

Collector

---,

,-----+--,

Base

I

I
I
I
I
I
I
I

I

__ ...J

__ ...J
Emitter

Emitter

1-449

MILLIMETERS
DIM MIN MAX

-

NOTE:
I. DIM "Q" IS DIA.
INCHES
MIN
MAX

-

39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.ti7 11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
Q
3.84
4.09 0.151
26.67
R
Collector connected to case.
CASE 11-01
(TO-3)
A

B
C
D
E
F
G
H
J
K

-

6.35
0.99

-

-

1.550
0.830
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

..

MJ900, MJ901 PNP/MJ1000, MJ1001 NPN

ELECTRICAL CHARACTERISTICS fTc

I

=25 0 C unless otherwise noted)

I

Characteristic

Ma.

Min

Symbot

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage i1)

lIB

Vdc

BVCEO

(Ie" 100 mAde, 'e '" 0)

60
80

MJ900, MJ1000

MJ901.MJ100l
Collector Emitter Leakage Current

mAde

leER

(Ves = 60 Vdc, RBE = 1 Ok ohm)

10
10
5.0
50
20

MJ900, MJ1QOO

(Vea "-80Vde, ABe = 1.0k ohm)
MJ901, MJ10D1
(Ves = 60 Vdc, ABe = LOk ohm, TC = 150oC) MJ900, MJ1000
(Vea = BOVdc, Rae = 1.0k ohm, TC '" 1500 Cl MJ901, MJ1Q01

Emitter Cutoff Current
(VSE = 5.0 Vdc. Ie'" 0)
Collector-Emitter Leakage Current
(VeE = 30 Vdc, '8:; 0)

mAde
j.LAdc

500
500

MJ900. MJ 1000

MJ901. MJ1001

(VeE = 40 Vdc, '8 '" 0)

ON CHARACTERISTICS
DC Current Galn(1)
(Ie = 3.0 Adc, VeE = 3.0 Vdcl
(Ie = 4.0 Adc, VeE = 3.0 Vdc)
Collector·Emltter Saturation Voltage(1)

Vdc

'8 '" 12 mAde)

20

(Ie = 8.0 Ade, IB = 40 mAde)

4.0

Base-Emitter Voltage(1)
(Ie = 3.0 Adc, VeE = 3 0 Vdc)

2.5

lie'" 3 a Adc,

Vdc

(1)Putse Test. Pulse Width 5300 ,",s, Dutv CvcleS 2.0%.

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 -SMALL-SIGNAL CURRENT GAIN
3000

50.000

200 0

20.000

z

::;:

TJ=150 oC

10.000

~ 1000

z

ffi

;;:'5000

~ 500

to

....

::>

~ 2000

""to
~

a:

~

u

o

~

Z

1000
500

-~5~C

./

200
100
50
0.01

TC - 250 C

u
-' 300

25 0 C

~

VCE = 3.0 Volts

./

50
0.05

0.1

0.2

0.5

1.0

2.0

5.0

30
103

10

105
f. FREQUENCY (Hz)

FIGURE 4 - "ON" VOLTAGES
3.5

I
I

3.0
TJ

!3o
?

w

2.5

:>

1.0

~
~

I

a:

0.02

0.05

0.1

I
0.2

I II
0.5

TJ = 2000 C

3.0
2.0

i \\

\'

~ 1.0

g o. r=:"-

SECONDARY BREAKOOWN LIMITATION
THERMAL LlMITATION@TC= 250 C
BONDING WIRE LIMITATION

o

7C
_ 0.5

./

8
!2

1111
1.0

=

::>

VCEisat)I@IICr'11121510

o

=

:E

~BEI@ I~EI=ru;:?

0.5

0.01

7.0
~ 5.0

250)C

I I
VB~(sat! @lcliB = 25~

2.0

1.5

>

i

FIGURE 5 - DC SAFE OPERATING AREA
10

I
I

I

~o

\

100

IC. COLLECTOR CURRENT (AMP)

_

[\

VCE = 3.0 Vdc
IC = 3.0 Adc

200

2.0.

5.0

10

0.3

JJ90~. Ml,~o

0.2

MJ901. MJ100l

O. 1
. 1.0

I

2.0

3.0

5.0

7.0

10

I

20

I

I

30

50

70

100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

IC. COLLECTOR CURRENT(AMP)

There are two limitations on the power handling ability of a
transistor: average junction temperature and secondary breakdown.
Safe operctting area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation; e.g., the transistor

must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations im~
posed by secondary breakdown.

1-450

®

MJ2S00, MJ2S01 PNP
MJ3000, MJ3001 NPN

MOTOROLA

10AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON

MEDI UM-POWER COMPLEMENTARY
SILICON TRANSISTORS

60-80 VOLTS

_ . . for use as output devices in complementary general purpose
amplifier applications .
•

High DC Current Gain - hFE = 4000 (Typ)

•

Monolithic Construction with Built-In Base-Emitter
Shunt Resistors

@

150 WATTS

IC = 5.0 Adc

MAXIMUM RATINGS
Rating
Coliector~Emitter

Symbol

Voltage

VCEO

MJ2500 MJ2501
MJ3000 IMJ"OOl
60
80

Unit

Vdc

Collector· Base Voltage

VCB

Eminer-Sase Voltage

VEB

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

0.2

Adc

Total Device Dissipation@Tc=2SoC
Derate above 2SoC

Po

Operating and Storage Junction

60

80

JE"~l::r

Vdc

150

Watts

0.857

W/oC

TJ,Tstg

-55 to +200

°c

Symbol

Max

Unit

eJC

1.17

°C/W

"[!~i
-F~

r-- J -

Temperature R Bngs

Q0<;/ ~-l

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

I

H\f'
!

,)\

~V

---,

r---+.

I
I
I

I

I
I
I
I
I
I
I
__ ...l

I
I

B...

---,
.-----ffi

~ 500

./

200 0

a'"

;;! 300

25°C......

z

1000

to

200

~

100

..
~

'-'

'" 500

~

200

-55°C

j

VCE - 3.0 Volts

0.01

0.02

0.05

0.1

0.5

0.2

1.0

2.0

5.0

30
103

10

f. FREQUENCY (Hz)

FIGURE 5 - DC SAFE OPERATING AREA

FIGURE 4 - "ON" VOLTAGES
10

I

3.0

~

.

'"''"::i
'">>'

2

~

2. 5

z>~

2. 0

JBE(~tl @lc/IB = 250

1. 5

~

c
~

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

r1\

- - Secondary Breakdown Limited
2.0 ~ Thermally Limited at TC:: 25 0 C
- - _ . Bonding Wire Limited
1. 0

~.r-.

o. 7

O. 1
1.0

10

IC. COLLECTOR CURRENT (AMP)

There are two limitations on the power handling ability of a

transistor:

3.0

8!2 o. 3
o. 2

I I 11111

o

. .

::l o. 5

Vn(i'lI~IICIJB =~50 I-

O. 5
0.01

::>

!.::::I

VBiiW[lt::~

1. 0

. . .

7.0
'Ii:' 5.0

TJ 2scic

g
c

\

105

IC. COLLECTOR CURRENT (AMP)

3. 5

"

TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc

\
50

100
50

2000

junction temperature and secondary breakdown. Safe

operating area curves indicate IC-VCE limits of the transistor that
must be observed for reliable operation; e.g., the transistor must

MJ2500. MJ3000 - j..
MJ2501. rJ300i

i-j\

TJj 2000le
2.0

3.0

5.0 7.0

10

20

30

50

1\
70 100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
pOwer that can be handled to values less than the limitations
imposed by secondary breakdown.

1 ~452

®

MJ3029
MJ3030

MOTOROLA

III
NPN SILICON HIGH·VOL TAGE TRANSISTORS
5 AMPERE
POWER TRANSISTORS
NPN SILICON

. designed for TV horizontal and vertical deflection amplifier
circuits.
•

High Collector·Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJ3029
325 Vdc (Min) MJ3030

•

Fast Fall Time in Horizontal Deflection tf = 1.0 lIS (Max) @VCC = 80 Vdc - MJ3030

•

Excellent Gain Linearity for Vertical Deflectio'1 hfe@0.4Adc,hfe@0.3Adc=0.95 (Min) - MJ3029

250-325 VOLTS
125 WATTS

MAXIMUM RATINGS
Symbol

MJ3029

MJ3030

Unit

Collector-Emitter Voltage

VeEO

250

325

Vdc

Collector-Emitter Voltage

VeER

500

Collector-Emitter Voltage

VeEX

-

Rating

Vdc
700

Vdc

VEe

5.0

Vdc

Ie

5.0

Adc

Base Current

Ie

1.0

Adc

Total Device Dissipation @TC :::: 2SoC

Po

125
1.0

Watts
Wloe

TJ,Tstg

-65 to +150

°e

Emitter-Base Voltage
Collector Current

Continuous

Derate above 25°C
Operating and Storage Junction
Temperature Range

F

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

I

Symbol

I

Max

I

T

I

8Je

1.0

I

Unit

°elW

NOTES:
1. DIMENSIONS Q AND V ARE DATUMS.
2. W IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q:
I t 1.·1310.005)e IT Ive I
FOR LEADS:

FIGURE 1 - POWER·TEMPERATURE DERATING eURVE
125

'\.
I'\.

"\

5

STYLE I
PIN 1 BASE
2 EMITTER
CASE COLLECTOR

I'\.

E
F

I'\.

5

o

G

H
J
K

""" I'\.'\.
o

25

50

75

aiM
A
B
C
D

"\

0

100

125

150

Q

R
U
175

I ve I De I

1•.

I t
13 I0005)eT
4. OIMENSIONS AND TOLERANCES PER
ANSI YI4.5. 1973.

I'\.

200

V

MILLIMETERS
MIN MAX
39.37
21.08
7.62
6.35
0.97
1.09
1.40
1.78
30.15 SSC
10.92 sse
5.46 SSC
16.89 SSC
11.18 12.19
4.19
3.81
26.67
4.83
5.33
3.81
4.19

-

CASE 1·05

TC, CASE TEMPERATURE lOCI

1-453

INCHES
MIN MAX
1.550
0.830
0.250 0.300
0.038 0.043
0.055 0.070
1.187 SSC
0.430 SSC
0.215 BSC
0.6658Se
0.440 0.480
0.150 0.165
1.050
0.190 0.210
0.150 0.165

-

MJ3029, MJ3030

ELECTRICAL CHARACTERISTICS (Te· 25 0 C unless otherwise noted)
Characteristic

Min

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1)
HC=O.l Adc, IS "'01

Vdc

250
325

Collector Cutoff Current

mAde

(VeE = 500 Vdc, Rae = 1.5 k Ohms)

10

Collector Cutoff Current
(VeE = 700 Vdc, VES{off) '" 1.5 Vdc)

2.0

mAde

ON CHARACTERISTICS
DC Current Gain
(Ie = 0.3 Adc, VeE = 5 0 Vdc)(11

25

(Ie = 0.4 Adc, VeE = 5.0 Vdc) (1)

30

Gain Linearity

0.95

Collector-Emitter Saturation Voltage
(Ie'" 3.0 Adc, Ie = 0.8 Adc)

Vdc

2.0

SWITCHING CHARACTERISTICS

Fall Time
(VCC=80 Vdc, Ie =3.DAde,ISl = a.BAde) Flgure3
(1)Pulse Test: Pulse Width :f:3QO}.ls, Duty Cycle S2.0".

FIGURE 3 - TEST FOR FALL TIME

FIGURE 2 - DC CURRENT GAIN
100
70
50

;;:
'"

to

....

20

'"

10

'"w
'":::>
c.J
c.J

c

~

VCEt 2.0 V

30

"

TJ.lOO~" 1'\ 25ic·

7.0
5.0

50
OUTPUT WAVEFORM
ON SCOPE

2.0
1.0
0.1

0.2

0.5 0.7

0.3

1.0

2.0

3.0

-=

8~1C0%t.90%

1'-

3.0

5.0 7.0

10

*HP 212A: Set for 10 I1swide pulses at 2000 pulses per sec.
(500"" intervals). Adjust for 181·0.8 A.

~~aspu~~~~:ridr'~~: °M~~io~~~~~°No~~~t~~j1;~ijl.

IC, COLLECTOR CURRENT (AMP)

FIGURE 4 - ACTIVE REGION SAFE OPERATING AREA
10
5.0
;;: 3.0
2.0

'"....

1.0

'"c.J'":::>
'"
....c

0.5
0.3
0.2

S

ill

~

c

c.J

~

.--

-

.'I..

TJ·'50·C

de

100

'\.
1.0m~

There are two limitations on the power handling ability of a

- - - Secondary Breakdown llmifed"\.,
- Bonding Wire Limited
Limllauon at Te .. 25 0C
0.05
Curves Apply Below Raled VCEO
0.03
MJ3029 _I'
0.02
MJ3030
0.01
10
50 70 100
20
30
200
325

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate 1C - VCE limits of the transistor that must be observed for reliable operation; Le., the transistor
mus~ not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) • 1S00C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(rk),;t; 1S00C. At high case
temperatures, thermal limitations wi! reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.

0.1

~ ~hermal

I I II

-+-'

500 700 1000

VCE, COLLECTOR-EMITIER VOLTAGE (VOLTS)

1-454

®

MJ3040
MJ3041
MJ3042

MOTOROLA

II.
DARLINGTON
10 AMPERE
POWER TRANSISTORS
NPN SILICON

HIGH VOLTAGE SILICON POWER
DARLINGTONS
. developed for line operated amplifier, series pass and switching
regulator applications.

•

Collector· Emitter Sustaining Voltage VCEO(sus) = 300 Vdc IMin) - MJ3040, MJ3041
= 350 Vdc (Min) - MJ3042

•

High DC Current Gain hFE = 100 (Min) @ IC
= 250 (Min) @ IC

= 2.5 Adc
= 2.5 Adc

300,350 VOLTS
175 WATTS

- MJ3040
- MJ3041, MJ3042

•

Low Coliector·Emitter Saturation Voltage VCElsat) = 2.2 Vdc (Max) @ IC = 2.5 Adc

•

Monolithic Construction with Bullt·ln
Base·Emltter Shunt Resistors

MAXIMUM RATINGS
Rating

Symbol

MJ3040

MJ3041

MJ3042

Unit

VCB

400

400

500

Vdc

VCEO

300

300

350

Vdc

Collector-Base Voltage

Collector-Emmer Voltage
Emitter-Base Voltage
Collector Current

VEB

Continuous
Peak (1)

IC

Total Device DlsslpatlOn@Tc - 25°C
Derate above 2SoC
Operating and Storage Junction

Po
TJ, T stg

.·

80
10
15

·
·

--175
1.0
_-65to+200

Temperature Range

.·

.·
-·

THERMAL CHARACTERISTICS

Vdc
Adc

Watts
W/oC

°c

JE'"~~'

"d:~ i
-F~

-J-

Q~ ~
+

Characteristic

H

f

Thermal Resistance, Junction to Case

~v

COLLECTOR

--,

I

I

I

BASE

R

1

lG

MILLIMETERS
INCHES
STYLE 1
MIN MAX
DIM MIN
MAX
PIN 1. BASE
A
.37
2. EMITTER
21.08
0.830
CASE COLLECTOR 8
C
6.35
7.62 0.250 0.300
D
0.97
1.09 0.038 0.043
1.78 0.055 0.070
1.40
E
F 29.90 30.40 1.177 1.197
G 10.67 -11.18 0.420 0.440
H
5.33
5.59 0.210 0.220
J 16.64 17.15 0.655 0.675
K 11.18 12.19 0.440 0.480
n 3.81 4.19 0.150 0.165
R
26.67
1.050
3.05 0.100 0.120
U
2.54

DARLINGTON SCHEMATIC

r-------

lr

;'\
r:>'-T

~S

U

(1) Pulse Width = 5.0 ms, Duty Cycle';; 10%.

I
I

I

,)\

I

I

-

I
I

I

-

CASE1-04

----'

NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO·3 OUTLINE SHALL APPLY.

EMITTER

1-455

MJ3040, MJ3041, MJ3042

ELECTRICAL CHARACTERISTICS

IDJ

(T C ' 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

300
350

-

-

1.0
1.0
5.0
5.0

-

40

100
250
25

-

Unit

OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage

Vde

VCEO(susl
MJ3040, MJ3041
MJ3042

(lC' 100 mAde, IS' 01
Collector Cutoff Current
(VCB • 400 Vde, IE '01
(VCB" 500 Vde,IE '01
(VCB' 400 Vde, IE '0, TC ,'1000CI
(VCB' 500Vde,IE' 0, TC' 100°C I

mAde

ICBO
MJ3040, MJ3041
MJ3042
MJ3040, MJ3041
MJ3042

-

Emitter Cutoff Current
(VBE ' 5.0 Vde, IC ' 01

mAde

lEBO

ON CHARACTERISTICS
DC Current Gain
(lC ' 2.5 Ade, VCE '5.0 Vdel

-

hFE
MJ3040
MJ3041, MJ3042
MJ3040
MJ3041, MJ3042

(lC ' 5.0 Ade, VCE ' 5.0 Vdel

-

50

Coliector·Emltter Saturation Voltage
(IC ' 2.5 Ade, IB ' 50 mAdel

Vde

VCE(satl

(lC '5.0 Ade, IB '400 mAdel

Base-Emitter Saturation Voltage

2.2

-

2.5

-

3.0

-

2.5

Vde

VBE(satl

(lC' 5.0 Ade, IB' 400 mAde I

Base-Emitter On Voltage

-

Vde

VBE(onl

(lC ' 2.5 Ade, V CE ' 5.0 Vdel

FIGURE 2 - DC CURRENT GAIN

FIGURE 1 - FORWARD SIASSAFE OPERATING AREA
2000
20

IITJ~I500C

1000

10

~

:5

...
0

~8

700

~ 500
10ms-r-

'"'"u

"
'"

z

50 ms

~

1
O. 2

!::f0.0 1
0.00 5
5

30

200

"

50

70

100

.,.
11.".,-

/'
./

10 0

.,

""
I-'

0
200

300

500

VCE. COLLECTOR·EMITTER VOL TAGE (VOLTS)

-

-

II

VCE~3Vde

- - - - - VCE ~5Vde

/'

o~-

01

I
02

03

05

III
07

IC. COLLECTOR CURRENT (AMPI

There are two limitations on the power handling abilitv of a
tranSistor - average junction temperature and second breakdown.
Safe operatmg area curves indicate Ie - VeE limits of the tran-

sistor that must be observed for reliable operation; I.e., the
transistor must not be subjected to greater diSSipation than the
curves indicate.
The data of Figure 1 is based on T J(pkl = 15o"C; T C is variable
depending on conditions. At high case temperatures, thermallimitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.

1-456

1"\

1'30oC

70
50

BONDING WIRE LIMIT
- - - - THERMAL LIMIT (SINGLE PULSEI
SECOND BREAKOOWN LIMIT
20

'"a:

25°C

&r

.".,-

u

TC " 25°C

10

300

~

de

01

...z

10

NPN

PNP

MJ3247
MJ3248
MJ4247
MJ4248

MOTOROLA

TO-66
TO-3

MJ3237
MJ3238
MJ4237
MJ4238

.--------,111
COMPLEMENTARY SILICON
POWER TRANSISTORS

8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

... designed for use as high·frequency drivers in audio amplifiers.
• DC Current Gain Specified to 4.0 Amperes
hFE

= 40 (MinI

@ IC

120-150 VOLTS
75 WATTS - TO·66
90 WATTS - TO·3

= 3.0 Adc

= 20 (MinI @ IC = 4.0 Adc
• Coliector·Emitter Sustaining Voltage·

VCEO(

1= 120 Vdc (MinI
sus = 150 Vdc (MinI

fT

= 20 MHz (MinI

@ IC

RATING
Collector-Emitter Voltage
Collector. Base Voltage
Emitter-Base Voltage
Collector Current - Continuous

= 500 mAde

Symbol

MJ4247
MJ4237
MJ3247
MJ3237

MJ4248
MJ4238
MJ3248
MJ3238

Unit

V CEO

120

150

Vdc

V CB

120

150

Vdc

Peak
Base Current - Continuous
Operating and Storage Junction
Temperature Range

V EB

5.0

Vdc

'C

8.0
16

Adc

Ie .

2.0

Adc

-65 to +150

T J• T stg

1

TO·3

Total Power Dissipation
Derate above 25°C

@

~

MJ4247
MJ4248

• High Current Gain - Bandwidth Product

T C = 25°C

lr~'~A'
~tH "
'J

r

E SEATING

Watts
woc

75
0.43

~

0

G

PLANE

MILLIMETERS

INCHES

DIM

M,N

MAX

MIN

A

-

--

C

63

39"
2108
78'
109

•

•

X

'0''''
83D

D250

"39
-

""
'" -~
,
," ,,,.
53'
'" "" '675
'40' DO"
1-+ ;84
•
'"
"
099

D

E
F
G
H
J

TO-66

90
0.51

Po

°c

MJ4237
MJ4238

1118

1664
1118

1111

1191

0420
0210

D220

1711j
1219

0151

0161
1050

2667

STYLE I
PIN I BASE
2 EMInER
CASE COLLECTOR

NOTE
1 DlM"Q".SD1A

CGlle(IOrtOJllll(;lIdIOCISl!

CASE 11-01

(TO 3)

THERMAL CHARACTERISTICS

I

Characteristic

I

Symbol

Thermal Resistance, Junction to Case

I

TO·3

TO-66

I

2.33

1.94

ReJC

Unit
°CIW

MJ3247
MJ3248

MJ3237
MJ3238

FIGURE 1 - POWER DERATING
100

~

0

;::
~

iii
c

'"
~

r--...

80

'"
z

-~

~

.........

.........

......

60

TO·66"'--.,

TO·3

..........

.......... ...........

40

•

C

"

..6 20

o

25

50

75

100

125

TC. CASE TEMPERATURE (OC)

M'.

D

F
G
H
J

~

~

150

'"

175

200

K
P

M.X

1194

1210
64
011 0 ..
127
2433 2443
533
241
267
1448 1499
91'
127

, '"

.......... ~

w

o

DI.

MILLIMETERS

'"

'"
-

...'"

..

MAX

0410 0500

O1SO 0340
0028 0034
o.SO 0015
0958 0962
0
10
0095 0105
0510 0590

O3SO

0050
0142 0152
S
0350
T
0145
1515
U
0620
AU JEOEC Olmenslon5 and and Not. Apply

• '"-

38'

CASE 80·02

rO-66

1-457

~
S

INCHES

STYLE 1
PIN 1 BASE
2 EMITTER
CASE COllECTOR

NPN MJ3247, MJ3248, MJ4247, MJ4248
PNP MJ3237, MJ3238, MJ4247, MJ4238

ELECTRICAL CHARACTERISTICS

(TC

= 250 C unless otherwise noted)
Symbol

Characteristic

Min

I

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(Ie = 10 mAde, IB = 0) MJ4237, MJ4247, MJ3237, MJ3247
MJ4238, MJ4248, MJ3238, MJ3248

Vde

VCeO(sus)

Collector Cutoff Current
(V ce = 120 Vde, IB = 0) MJ4237, MJ4247, MJ3237, MJ3247
(V CE = 150 Vdc, I B = 0) MJ4238, MJ4248, MJ3238, MJ3248

IceD

Collector Cutoff Current
(V CB = 120Vde, Ie = 0) MJ4237, MJ4247, MJ3237, MJ3247
(VCB = 150 Vde, Ie = 0) MJ4238, MJ4248, MJ3238, MJ3248

ICBO

Emitter Cutoff Current
(V BE = 5.0 Vde, IC = 0)

lEBO

120
150

-

-

0.1
0.1

-

10
10

mAde

!lAde

10

I'Ade

ON CHARACTERISTICS (1)
DC Current Gain
(lC = 0.1 Ade,
(lC = 2.0 Ade,
(lC = 3.0 Ade,
(lC = 4.0 Adc,

= 2.0 Vde)
= 2.0 Vde)
= 2.0 Vde)
= 2.0 Vdc)

-

40
40
40
20

DC Current Gain Linearity
(V CE From 2.0V to 20V, IC From 0.1 A to 3A)
(NPN TO PNP)

VCE(sat)

Base-Emitter On Voltage

VBE(on)

= 1.0 Adc, Vce = 2.0 Vdc)

Typ
2
3

hFE

Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 0.1 Adc)

(lC

-

h Fe
Vce
VCE
V CE
V ce

-

0.5

Vde

1.0

Vdc

DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
(lC = 500 mAde, Vce = 10 Vde, f test

= 10 MHz)

(1 )Pulse Test: Pulse Width';; 300 I'S, Duty Cycle';; 2.0%.
(21fT =

I h fe I • f test

FIGURE 3 - CURRENT GAIN BANDWIDTH PRODUCT

FIGURE 2 - CAPACITANCES

a

100

0

NPN

Cib

50 a

--

0:-:-

--

a
a

PNP

TJ - 250 C

C,b

0--

........

r--...

.,
,//

0/

Cob

t...... NPN and PNP

r---

r'\.

PNP

\

,~

1\

a

Ci b

0
NP;-

0

II
1.0

2.0

5.0
10
20
VR, REVERSE VOLTAGE (VOLTSI

50

100

1-458

a0.1

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT IAMPI

5.0

I

NPN MJ3247, MJ3248, MJ4247, MJ4248
PNP MJ3237, MJ3238, MJ4247, MJ4238

III

FIGURE 4 - THERMAL RESPONSE (T0-66)
1.0

.-

-',",,'"
~ ~

I-0.5

0-0.5

I-- t-

0.3

0.2

--

~;i 0.2 p=- t- 0.1

... '"
.....

t"-

zo

!:!::! ~ O. lj;;2

~w

z,-,

'""z

0.05 I-

f- 0.01

'JlJl
r
kl

p(

;;;-

r:

~ ~ D. 5~ po 1-0 (SINGLE PULSEI

..

'

...:~

~UTY

'? fa 0.0 3

",

0JC(t)· r(.1 8JC .:
8JC ·1.94oCiWMax
0 CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

'2---j
CYCLE, 0 '11/'2

TC' P(pkl eJc(.I

TJ(pki

0.02

I 111111

0.0 1
0.01

0.02 0.03

0.2

0.05 0.07 0.1

0.3

0.5 0.1 1.0

20

3.0

I I I I I

5.0 7.0 10

20

30

I I II I
60 70 100

200 300

II
500 700 1000

t,TIME(ms)

FIGURE 5 - THERMAL RESPONSE (TO·3)
1.0

o. 71=0 - 0.5

;;t

~_ O.5

w'"
",w

I-!:::! O. 3~ 0.2
o. 2
0.1
~~

ffi~

I-

r-

,""Z

f--"'

~: o. 1t=:0.05
~~O.O 7~O.D2
g~o.o 5
~~

tt:i ~ 0.03 L.-0.02

r-

0.0 I
0.01

..-IC

......

.PmJl

t~.J
0.01

eJc('I • r(.1 OJC
BJC = 1 17 °C/W Mal(
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME A"I
TJ(pki - TC • P(pkl 8Jc(.1

DUTY CYCLE, 0 '111t2

SINGLE PULSE

II II

III
0.02 0.03

0.05

01

02

0.3

0.5

10

20

30

50

II

10

20

30

50

100

200

300

500

1000

t, TIME (ms)

FORWARO BIAS SAFE OPERATING AREA
FIGURE 6 - MJ3237. 381MJ3247. 48

FIGURE 7 - MJ4237. 38/MJ4247. 48

0

0

....
I"

DE
~

'=
.1

0

-

-

TC 25°C

~

-

-

20
50
3.0
5.0
10
VCE, COLLECTOR - EMITTER VOLTAGE (VOLTSI

I

~

~;~m~
MJ3237
MJ3247

0.0 1
1.5

F

BONDING WIRE LTD
THERMAL LTD
- - - SECOND BREAKDOWN LTD

.I-"
BONDING WIRE LTD
THERMAL LTO
SECOND BREAKDOWN LTD
TC' 25°C

~

MJ4237
MJ4247

r--

MJ4238
MJ4248

~
100

-

-

150

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - v CE limits of the transis¥
tor that must be obseNed for reliable operation; i.e., the transistor
mJst not be subjected to greater dissipation than the curves
indicate.

1-459

0.0 I

~

n-

1.5 2.0

5.0
10
20
50
VCE, COLLECTOR - EMITTER VOLTAGE IVOL TSI

100

ISO

Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may reduce

the power that can be handled to values less than the limitations
imposed by second breakdown.

NPN MJ3247, MJ3248, MJ4247, MJ4248
PNP MJ3237, MJ3238, MJ4247, MJ4238

FIGURE 8 - DC CURRENT GAIN
PNP

NPN
1000

1000
700

~oo

z 300

~

+l~OoC

ill

2~oC

B

~~oC

....

VCE" 2 V

'"
~

~

~ 100

70

;(

r"

-55°C

100

'"'

c

.#

"

50

I"

~

30

""
10

~~~

200

G

'"'c

.#

TJ "2~oC
VCE" 2 V

+1500C

z

TJ" 2~oC

0.1

0.2

1.0
o.~
2.0
IC. COLLECTOR CURRENT lAMPS)

20
10

~.O

10

0.2

0.1

o.~
1.0
2.0
IC. COLLECTOR CURRENT lAMPS)

10

5.0

FIGURE 9 - "ON" VOLTAGE
PNP

NPN
2.0

1 I

2.0 ' - '

II

TJ" 25°C

TJ" 25°C
1.6

g
c
~

'"
'"
~0

1.2

I I
I I
~

VSElon)@VCE"2V
0.8

,;
0.4

o0.1

-II I

I I
0.3

~ 1.2

r--

~

0

>
>'

V

2.0
1.0
IC. COLLECTOR CURRENT IAMPSI

(j

0

/

'T 11111

I I J I. III
VCEI,,!)@ Ic/la" 10

V

§
'"'"

VaEI"I) @ Ic/la " 10

j

>

l:::?'

~

1.6

~

VSElonl @ VCE " 20 V

0.8

I--

VSEI"I)@IC/ls "10

I--

VCElsal)@IC/IS - 10

5.0

I

o0.1

10

~

-

I, I. II
o.~

1.0
2.0
IC. COLLECTOR CURRENT lAMP)

0.2

V

V
,/

1'1 'I I I

0.4

--P"

~.O

10

FIGURE 10 - SWITCHING TIMES
PNP

NPN
1. 0

10
5.0

o. 5

-r--..

::--..

I- VCC - JOV
~ ICIIS"10
0.5 ~ IS1"IS2 fo, "OFF" CON01TJONS
I-TJ"250C

I"--

1.0

j

'"

'.:"'

0.2

;::

O. I-I'-...

"'...

~

IiI,

;::

~

"

,
.....,.,

Is

I·

I'-...
,/

'~
I,

0.0 ~

0.05

-....

,
Nld

0.0 1 0.1

o. 1

'"

"

......

O.~

1.0
2.0
IC. COLLECTOR CURRENT lAMPS)

~.O

10

1-460

VCC" 30V
0.0 2 Ic/IS" 10
I"-IS1-IS2 fo, "OFF" CONDITIONS
TJ" 25°C
0.0 1
0.1
O.~
1.0
2.0
0.2
IC. COLLECTOR CURRENT lAmp)

Id

I
~.O

10

®

MJ4030, MJ4031, MJ4032 PNP
MJ4033, MJ4034, MJ4035 NPN

MOTOROLA

16 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON

MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS

GO-100VOLTS
150 WATTS

. . . for use as output devices in complementary general purpose
amplifier applications.
•

High DC Current Gain - hFE = 3500 (Typ) @ IC = 10 Adc

•

Monolithic Construction with Built-In Base·Emitter
Shunt Resistor

MAXIMUM RATINGS
Svmbol

MJ4030
MJ4033

MJ4031
MJ4034

MJ4032
MJ4035

Unit

VCEO

60

80

100

Vdc

Collector-Base Voltage

VC8

60

80

100

Vdc

Emitter-Base Voltage

VE8

5.0

Vdc

IC

16

Adc

Rating
Collector-Emitter Voltage

Collector Current
Base Current

18

0.5

Adc

Total Device Dissipation@TC::::2SoC

Po

150
0.857

Watts
W/oC

TJ,Tstg

-55 to +'200

°c

Derate above 25°C
Operating and Storage Junction

JE"4=tr
"~1
t---

Temperature Range

Characteristic
Thermal Resistance. Junction to Case

Svmbol

I

e

I

C

Max
1.17

I

Unit
°C/W

H-ryr

t

FIGURE I-DARLINGTON CIRCUIT SCHEMATIC
Collector

---,

,..----+...,

I

I
I
I
I

Ba..

Collector

NPN

MJ4033
MJ4034
MJ4035

---,

,..----+-,

Ba..

I

I
I
I
I

I

I
I

I

__ .JI

__ .JI
Emitter

Emitter

1-461

·W\

y"V

U

PNP

~

Q~Vn ~~

THERMAL CHARACTERISTICS

MJ4030
MJ4031
MJ4032

F

r--J-

XT

11
lG

i

\.S

MILLIMETERS
STYLE 1
DIM MIN MAX
PIN 1. BASE
2. EMITIER
1.08
CASE COLLECTOR B
C
6.35
7.62
0
0.97
1.0
1.78
E 1.40
F 29.90 30.40
G 10.67 11.18
H
5.33
5.59
J 16.94 17.15
K 11.18 12.19
Q
3.81
4.19
R
26.67
3.05
U 2.54

INCHES
MIN MAX
.550
o.B30
0.250 0.300
0.03
0.043
0.055 D.l170
1.177 1.197
0.420 0.440
0.210 0.220
0.655 0.675
0.440 0.480
0.150 0.165
1.050
0.100 0.120

CASEI-04
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO·3 OUTLINE SHALL APPLY.

MJ.4030,MJ4031, MJ4032 PNP/MJ4033, MJ4034, MJ4035 NPN

ELECTRICAL CHARACTERISTICS ITc '" 2SoC unless otherwise noted)

I

I

Characteristic

M..

Symbol

M..

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(Ie = 100 mAde, '8 = 0)

Vdo

BVCEO

60
80
100

MJ403Q, MJ4033
MJ4031, MJ4034
MJ4032, MJ4Q35

Collector Emitter l-eakage Current

mAde

leER

(Vea"'60 Vdc, RBe = 1.0kohmJ
(Vea =80 Vdc, RBe = 1.0kohmJ

MJ4030. MJ4033

, 0

MJ4031, MJ4Q34

(Vea'" 100Vdc, RBe '" 1.0kohmJ
(Vea =60Vdc, RBe = 1.0kohm, TC = 1S0oC)

MJ4032, MJ4035
MJ4030, MJ4033

(Vee .. aOVdc, RBe = 1 Okohm, TC '" 150°C)

MJ4031, MJ4034

(Vee .. 1OQVdc, RaE = 1 Okohm, TC = 150°C)

MJ4032. MJ4035

'.0
'.0
50
50
50

Emitter Cutoff Current
(VSE = 5.0 Vdc, Ie = 0)

lEBO

Collector-Emitter Leakage Current
(VCE '" 30 Vde, 18 = 0)

'CEO

50

mAde

30
30
30

MJ4030, MJ4033
MJ4031, MJ4Q34

(VeE'" 40 Vdc, '8 '" OJ
(VeE = 50 Vdc, IS = OJ

mAde

MJ4032, MJ4035

ON CHARACTERISTICS(1)

Collector-Emitter Saturation Voltage
(lC'" 10 Adc, 18 '" 40 mAde)
He = 16 Ade, 18 = 80 mAde)

do

VeElsat)

25
40

8ase-E mitter Voltage
HC = 10 Ade, VeE = 3.0 Vde)
(l)Pulse Te$t

'000

hFE

DC Current Gain
HC '" 10 Adc, VCE = 3,0 Vde)

30

VBE

Pulse Width '5: 300 jJS, Duty Cycle s:2 0%

FIGURE 3 - SMALL-SIGNAL CURRENT GAIN

FIGURE 2 - DC CURRENT GAIN
300 0

50,00 0

200 0

20,000

z

~ 1000

TJ = 150°C

10,000
z
:;: 5000

i

to
I-

1'\'

~ 2000

ag

500

~

200

25°C

1\,

./

1000

VeE

0.05

0.1

0.5

0.2

300

to

20 0

~

-550C
==

1.0

:1
5.0

10

0

104

20

105

t, FREUUENCY 1Hz!

Ir., COLLECTOR CURRENT IAMPI

FIGURE 5 -DC SAFE OPERATING AREA

FIGURE 4 - "ON" VOL TAGES
3.5

50

3.0

TJ = 25°C

~

,.

~

2. 5

to

....,,1:::::

VBEI,,1)@ICIIB=250

l. 5 -

o

>
>. 1.0

VBE@VCE

o

11111
0.05

0.1

0.5

1.0

'

...

~

2.0

~

1.0

I
5.0

10

=

0.0 5
2.0

20

IC, COLLECTOR CURRENT lAMP!

MJ4030, MJ403;
MJ4031, MJ403~ _

""

1,\ ~ MJ4032, MJ4035

TJ = 200°C

5
SECONDARY BREAKDOWN LIMITATION
~ O. 2 - - - THERMAL LIMITATION @TC = 25°C
- . - BONDING WIRE LIMITATION
O. 1

~

VCEI..,!@ICIIB=250

O.5

- -

~

3.0 VollS

11111

20
16 1-10

~ 5.0

/

w

0.02

5

I'

2 2.0

~

'\

TC = 25°C
VCP 3.0 Vdc
IC=10Adc

0
'"
~ 10

3.0 Volts

2.0

500



111

VCEO{sus)

200 mAde)

COllector-Base Cutoff Current

mAde

ICSO

(VCS' 100 Vdc, 'E • 0)
(VCS' 100 Vde, 'E • 0, TC' 150°C)

Emitter-Base Cutoff Current
(VSE • 4.0 Vde, Ie' 0)
ON CHARACTERISTICS 111

DC Current Gain
(lC' 7.5 Adc, VCE • 2.0 Vdc)

Base-Emitter "On" Voltage
(lC' 7.5 Adc, VCE' 2.0 Vdc)

Collector-Em;tter Saturation Voltage
(lC' 7.5 Adc,IR • 0.75 Adc)

Base-Emitter Saturation Voltage
(lC' 7.5 Ade,IS' 0.75 Adc)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product
(lC' 1.0 Ade, VCE • 10 Vde, f · 1.0 MHz)
(1. Pulse Test: Pulse Width::S; 300 J,l.s, Duty Cycle :5:2.0%.

FIGURE 2 - DC CURRENT GAIN

~

FIGURE 3 - "ON" VOLTAGES

2.0 H+H+I+-++-=..l....:':+.::!-H-H--++-IH-+-+++-I-H--++H

H-+++ttI-:::;j=--r-l'TJ'I";'7;50"'tC-++I:~t-+-+++~~~ ~I ~.O
t250C
1""--1'-

~

t

g

I ~~~II~~f~~il~a~~~il§!!~
~550C
0.7
w 1.0
~ 0.5
~

.

0.31-1--'++++H+-+-hH-+l+ttt~+H+-H~+f!l.-1
,+-+-H

i

O.2I-H+I++1f-o+.ta-.+h-lown+i-l.-obl-ta+in+.tld+fr-om-+pu-1I..
H-tasts-l-+-I+H+~d~lkI+1

aijU~d

TJLJ.J

1.4
1.2

CO

1.0

0

0.8

~

t-

I

1.6

~

w

~~~~~~~~+tH~~-+~~-H~~-+~~

i
z

0

2.0
1.8

>

VBE(sat)@IC/lB= 10
Illil·1
-

k O.B
1"

VBE@VCE = 2.0 V

0,4

il t'

I I

1111

0.2

anr
ti jU,"I, oct lcn ++Htl+-iN?t-I
0.1.':='::,!;;,~-f-:-~'::';;'~;!-;,-"-'f';;-"--:::"::';:-'-;!;:1.J~:--'-+'-,,!
0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 3D
IC, COLLECTOR CURRENT (AMP)

VCE(..t) @IcllB = 10

o

0.D3 0.05

0.1

-

.....

~

t2

lL

--l

+-

0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)

10

20 3D

FIGURE 4 - ACTIVE REGION SAFE OPERATING AREA
100

-

50
0:

~"'"
dc

~ 20
!;;
10
w

~100 ...

I.Orns

"-

i'

.

II:

:; 5.0

5.0 ms

II:

"

~ 2.0 -TJ=2DOoC
~ 1.0 ~ -

Secondary Breakdown Limitad
= -- --80nding Wi" Limitad
.... 0.5 - - Thormal LimitationsTc =250 C
....I

o

~

0.2

-

==

O. 1
1.0

The Safe Oper-,"ing Area Curves indicate Ie - Vee IimiU befow
which ttle clev\ce will not enter sec:ondIIry breakdown. Collector
IOld lines for specific circuits mult fall within the applicable Saf.
Ar.. to lI'IOili causing a cetesb'OPhk: f,lIure. To insure oparation
below the maximum T J. power-temperature deming must be oboIBMId f« bOth steady state and pulse power conditions.

Pul" Duty Cycle S 10%

2.0

3.0

5.0
10
20
3D
VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)

1-464

50

100

®

MJ4645

thru

MOTOROLA

MJ4647

1.0 AMPERE
POWER TRANSISTORS
PNPSILICON
200-300-400 VOLTS
5 WATTS

PNP SILICON POWER TRANSISTORS
designed for high-voltage amplifier and saturated switching
applications at collector currents to one Ampere. Ideally suited for
applications of dc-to-dc converters, relay and hammer drivers, motor
controls, and servo and pulse amplifiers. High-voltage ratings permit
direct-line operation.
•

Low Collector-Emitter Saturation Voltage VCE(sat) =
1.5 Vdc (Max) @ IC = 500 mAde

•

High Collector-Emitter Breakdown Voltage BVCEO = 200, 300, and 400 Vdc (Min)

•

DC Current Gain Specified - 10 mAdc to 500 mAde

<

ffI

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

MJ464S

MJ4646

MJ4647

Unit

VeEO

200

300

400

Vdc

VeB

200

300

400

Vdc

Collector· Base Voltage

Emltter·Base Voltage
Collector Current

Continuous

VEB

50

Vdc

Ie

0.5
10

Adc

PD

5.0

Watts

28.6

mwf'e

Peak

Total DeVice DISSipation

TC - 25°C

@

Derate above 2SoC
Operating and Storage Junction
Temperature Range

--

T J.TSlg

FIGURE 1 - POWER DERATING

0

"'" :"'"

a

'"

r-...

"

0
40

60

°e

80

lao

120

P

L
~K

-=----.l

~

G

(

N

140

Tc, CASE TEMPERATURE (OCI

160

"" "'"
180

200

1-465

STYLE 1
PIN 1. EMITTER
2. BASE
N 3. COLLECTOR

v1¥J
MILLIMETERS
MIN MAX
8.89 9.40
8.00 8.51
6.10 6.60
0.406 0.533
0.229 3.18
0.406 0.483
.G
4.83 5.33
0.711 0.864
H
J
0.737 1.02
K 12.70
6.35
L
0
45
NOM
M
P
- 1.27
Q
900 NOM
2.54
R

DIM
A
B
C
D
E
F

r--....

a
20

--

SE~T!~~ ---H-D

~

Character.stlc

""

-----

k

I

Thermal ReSistance, Junction to Case

a

B

Q

-65 to +200 - -

THERMAL CHARACTERISTICS

.0

~
R

INCHES
MIN MAX
0.350 0.370
0.315 0.335
0.240 0.260
0,016 0.021
0.009 0.125
0,016 0,019
0.190 0.210
0.028 0.034
0.029 0.040
0.500
0.250
45 0 NOM
0.050
900 NOM
0.100

All JEOEC dimensions and notes apply.
CASE 79-02
TO-39

MJ4645 thru MJ4647

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

I

I

Characteristic

Symbol

Min

Typ

Max

200

-

300

-

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(Ie = 10 mAde, IB = 0)

Collector-Base Breakdown Voltage
Ilc = 100 "Adc, IE = 0)

400

,

Vdc

BVCBO
200
300
400

-

-

BVEBO

5.0

-

-

Vdc

ICEX

-

-

10

"Ade

20

-

-

MJ4645
MJ4646
MJ4647

Emitter-Base Breakdown Voltage
(IE = 100"Adc,IC = 0)
Collector Cutoff Current
IVCE = 200 Vde, VBE(olli

Vdc

BVCEO
MJ4645
MJ4646
MJ4647

-

= 0.5 Vdei

ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE

..

hFE

= 10 Vde)
(lC = 100 mAde, VCE = 10 Vde) (1)
(lC = 500 mAde, VCE = 10 Vde)(l)

Collector-Emitter Saturation Voltage
(lc = 500 mAde, IB = 100 mAde)

25

-

-

20

.

-

-

0.5
0.6
0.75

1.0
1.2
1.5

40

-

30

-

-

-

80
60

td

-

-

100

ns

tr

..

-

100

ns

toft

-

-

720

ns

Vde

VCE(satl
MJ4645
MJ4646 .
MJ4647

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 70 mAde, VeE = 20 Vde, I

MJ4645, MJ4646
MJ4647,

Output Capacitance

= 20 Vde,

(VeB

IE

MHz

IT

= 20 MHz)

.

pF

Cab

= 0, I = 100 kHz)

MJ4645
MJ4646, MJ4647

SWITCHING CHARACTERISTICS

= 500 mAde,
= 50 mAde, VBE(oll) = 5.0 Vde)
(VCC = 100 Vde, IC = 500 mAde,
IBI = IB2= 50 mAde, Pulse Width = 1.0"s)

Delay Time

(VCC = 100 Vde, IC

Rise Time

IBI

Turn-Off
Time

(1) Pulse Test: Pulse Width

.s; 300 IJS, Duty Cycle ~ 2.0%.

FIGURE 2 - ACTIVE-REGION SAFE OPERATING AREA
1.0
100",

0.7
0.5

1.0ms
5.0m

TJ' 200'C

de

~.

--1-l

",

There are two limitations on the power handling ability of a

\

SE ONOARY
I T T BREAKOOWN LlMITEO
BON01NG WIRE
t-,LI~I,T,Ep,

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the
transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.

\
1\

The data 01 Figure 2 is based on T J(pk) = 2000C; T C is

,

- - - - THERMALLY LIMITEO@
'IC' 25'C (SINGLE PULSEI

variable depending on conditions. Second breakdown pulse limits
are valid lor duty cveles to 10% provided T J(pk) .;;; 2000C. At

,
I CURVES
APPLY ~iit'r4645RATEO BVCEO
MJ4646_

0.0 1
1.0

II 11I1I"j
2.0 3.0

5.0 7.0 10

20 30

~IJ~~~7

50 70 100

high case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limit~tions imposed

r--')

200 300 500

bV second breakdown.
1000

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-466

®

MJ6502
MJ6503

MOTOROLA

III
8 AMPERE

PNP SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
PNP SILICON POWER TRANSISTORS

250 AND 400 VOLTS
125 WATTS

The MJ6502 and MJ6503 transistors are designed for high·voltage,
high·speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for line operated switch mode
applications such as;
•

DeSIgner's Data for

Switching Regulators

•

Inverters

•

Solenoid and Relay Drivers

•

Motor Controls

•

Deflection Circuits

·'Worst Case" Conditions
The Designers Data Sheet per·
m Its the design of most circuits
entirely from the tnformatlon presented Limit data - representing

device charactenstics boundanes are given to facIlitate "worst case"

Fast Turn·Off Times
100 ns Inductive Fall Time @ 250 C (Typ)
125 ns Inductive Crossover Time @ 250 C (Typ)

design

a peratlng T em perature Range -65 to +200 oC

J

lOOoC Performance Specified for;
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

...

I....

~~~r~.

-

r---F--

i

MAXIMUM RATINGS

0

J -

o~V
~ -""~.~IV 1 1
~ 0/-- -Qr~/ lor
R

Rating

Symbol

MJ6502

MJ6503

cor lector-Emitter Voltage

VCEO(susi

250

400

Collector-Emitter Voltage

VCEV

300

450

~~
Vdc
Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current - Contmuous
Peak (1 I

IC
ICM

8.0
16

Adc

16

4.0
8.0

Adc

125
71.5
0.714

Watts

-65 to +200

°c

Base Current - Continuous
Peak (11

IBM

Total Power DIssipation @TC - 25 0 C
@TC

Po

= lOOoC

Derate above 2SoC
Operating and Storage Junction
Temperature Range

TJ. T stg

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test. Pulse Width - 5 ms, Duty Cycle" 10%.

u
NOTES.
1. DIMENSIONS Q AND V ARE DATUMS.
2. [jJ IS SEATING PLANE AND DATUM.

3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q:

I +11.1310.0051@ IT Iv@1

W/oC

FOR LEADS:

I +11.1310.oo51@T I v@ I Q®I
4. DIMENSIONS AND TOLERANCES PER
ANSI Y14.5. 1973.

• 'M

A

I
C

•
•
•
E
F

Symbol

Max

Unit

ROJC

1.4

°CIW

TL

275

°c

H
J

Q

R
U
V

MILLIMETERS
MI. MAX

-

39.31
21.08

0.91
1.

30158

10.921SC
5.46 Ise
16.89BSe

-

4.83
3.81

12.19

PIN!

0.666
0.440
0.150

4.19

0.190
0.150

61
5.33

-

.,,'

2 EMITTER
CASE COLLECTOR

1.187
0.430
0.215

4.19

CASE 1.(15

1-467

STYLE'

-

1.62 0.250
1.09 0.038
11 0.055

6.35

11.18
3.81

,.

MI •

I

MJ6502, MJ6503

ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEOlsus)

250'
400

-

-

Vde

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Table 1)
IIc = 10 rnA, I B = 0)

MJ6502
MJ6503

Collector Cutoff Current

IVCEV
IVCEV

= Rated VCEV, RBE = 50 n, TC = 100°C)

Emitter Cutoff Current
IV EB

= 6.0 Vde,

mAde

ICE V

=Rated Value, VBEloff) = 1.5 Vde)
=Rated Value, VBEloff) = 1.5 Vde, TC = 150°C)

Collector Cutoff Current

IVCE

--

IC = 0)

-

0.5
2.5

ICER

-

-

3.0

mAde

lEBO

-

-

1.0

mAde

SECOND BREAKDOIIVN

Second Breakdown Collector Current with base forward biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS 11)

DC Current Gam
IIc = 2.0 Ade, VCE

hFE

= 5 Vde)

Collector-Emitter Saturation Voltage
IIC = 4 Ade, IB = 1.0 Ade)
IIc = 8 Ade, IS = 3.0 Ade)
IIc = 4 Ade, IS = 1.0 Ade, Tc

VCElsat)

= 100°C)

Base·Emltter Saturation Voltage

15

-

-

-

-

1.5

-

-

5.0
2.5

-

-

1.5
15

-

0.025

0.1

ps

0.100

0.5

ps

0.60

2.0

ps

0_11

0.5

ps

Vde

Vde

VSElsatl

IIc = 4 Ade, IS = 1.0 Ade)
IIc = 4 Ade, IS = 1.0 Ade, Tc = 100°C)

--

DYNAMIC CHARACTERISTICS

Output Capacitance
IVCS = 10 Vde, IE =0, f test = 1.0 kHzl
SIIVITCHING CHARACTERISTICS

Resistive Load (Table 1 )
Delay Time

Rise Time

Storage Time
Fall Time

IVec = ·250 Vde, IC'~ 4.0 A, IBI = 1.0 A,
tp = 50 JJS, Duty Cycle .;;; 2%)

td

IVCC = 250 Vde, IC = 4.0 A, lSI = 1.0 A,
VSEloff) = 5 Vde, tp = 50 jJ.S, Duty Cycle .;;; 2%)

ts

t,
tf

Inductive Load, Clamped (Table 1)

Storage Time
Crossover Time
Fall Time

Storage Time
Crossover Time
Fall Time
III Pulse Test: PW

IIC =4 A(pk), VCElpk) = 250 Vde,lSl = 1.0 A,
VBE(off)

= 5 Vde, TC = 100°C)

IIC = 4 Alpk), VCElpk) = 250 Vde, 181
VBEloff) = 5 Vde, TC = 25°C)

tsv
te
tfi

= 1.0 A,

tsv

"'tfl

300 IlS, Duty Cycle';;; 2%

1-468

-

0.8

3.0

ps

0.4

1.5

~s

0.1

ps

0.125

--

0.1

-

JJS

0.5

ps
ps

MJ6502, MJ6503

III

DC CHARACTERISTICS

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURR ENT GAIN
_ 2.0

Or--

z

~

....

~

~

TJ"lS0oC-1-

100

'"~
w
to

0
0'-- TJ = 2SoC

'"::>

" t'...:

30
0

'"
1:l

~
~
.r

r-,

VCPSV

10
~ 7. 0
S.0

1.2

~_

TJ= 2SoC

\

0.4

>
0.2

0.1

S.O

O.S 0.7 1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMPS)

0.3

7.0

10

o0.01

0.02

2.0

1. 6

IC/IB =4
1. 2

V

~ 1.2
to

'">

TJ= lS00C :/

8j 0.4

---

8

a

0.1

0.2

0.3

y

>-

y

0.4

TJ=l5OoC

O.S 0.7 1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMPS)

S.O

7.0

10

a

0.2

0.1

ci

s} 10

5.0

3.0

70

10

I
TJ

= 25~C

C,b

./

a

~ 103

u

2.0

200a
100 a

Tp lS00C

2

10

FIGURE 6 - CAPACITANCE

/

10

0.5 07

300O - t -

4

~

0.3

IC. COLLECTOR CURRENT (AMPS)

FIGURE 5 - COLLECTOR CUTOFF REGION

1:l

..-/

TJ - 2SoC

10S

1.... 10

I- ~

'"~ 0.8 -TJ-25OC

0.8

I?

--

w

'"'"

'"'"
~

10

S.O

2.0

~

;E

~

1.0

:;

IC/IB =4

~

>

0.50

I
I

1.6

~

1.1:1

0.20

0.10

FIGURE 4 - BASE-EMITTER VOLTAGE

:;

'"~

0.05

lB. BAse CURRENT (AMPS)

t;; 2.0

to

-

;;.;:

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

w

"\

\

\

8

~

5.0A

1\

0.8

'"

3.0

'"~

2.5 A

'"

~

2.0

1.6

~

IIII
IIII

I "
IC=0.2SAI 1.0"A

r--

100°C

1 ~REVERSE

OH25 0C
10
+0.2

+0.1

t--!:0b

a
VCE -2OGV ~

I

100

FORWARD

a

1/
-0.1
-0.2
-0.3
Vilf. BASE·EMITTER VOLTAGE (VOLTS)

i

t'--

-0.4

a 0.1

-0.5

0.2

0.5

1.0

S.O

10

20

50 100

VR. REVERSE VOLTAGE (VOLTS)

1-469

200

500 1000

MJ6502, MJ6503

TABLE 1 - TEST CONDITIONS FOR DVNAMIC PERFORMANCE

RBSDA AND INDUCTIVE SWITCHING

VCEO(susl

RESISTIVE SWITCHING

+v

TURN ON TIME

Input
I B 1 ad lusted to

obtain the forced
hFE deSired
TURN OFF TIME

PW Vaned to Attain

Use inductive sWitching

O.1,uF

le-IOOmA

L---------.--~~o~:
-v

-v

adjusted to obtain desired IS1

1

driver as the Input to
the reSistive test CirCUit

+V adjusted to obtain desired VSE(off)

leol'

LeOl1 -so rnH Vee -10 v

Aeoll

R co •1 DO 7 H

Vee

V clamp

180,uH

= 250

AL
RS adjusted to attain I B 1

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

I-

I, Adjusted to

ObHlln

'e

: Read
I

:5
u

u
'"
Iiiw

= 62 n

Pulse Width'" 1 0 ~s

RESISTIVE TEST CIRCUIT

.,
~

Vee"" 250 V

V

0 05 It

10 'v

LCO,I(ICpk)

I
I

' , ' -vee
--

: Leoil
I
_J

See above
for Detailed
Conditions

12 '" Leod (lCpk I
Vclamp

Te,t EqUipment

Scope
TektroniX
475 or Equivalent

FIGURE 8 - INDUCTIVE SWITCHING TIMES

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

--- - -

r--

/

'is'

-r--

L __

",-~= __

---

---

"'"

...........

~-~

9~%!.B.\v~~7~kl ; =
'"'i

VCE

""

-'sr
Ie .........

==-- !--

'i;fpkJ~

~~ 8l0%~

'rv- Vf.. ttl~
I

1'V

...............
-............ ......

1.0

i~l~kl : / \
-""" ....:....rc(pkl
'- VCElpkl
TIME

3.0

'\I.

27

tcl000~\.

O.B

a
w 1\

1""xsvl000C

"i= 0_6

'h.

"'w
~

~sv250e--""'"

~ 0.4

4A _
lc/lB ~ 4

r--."

" '-

"l'--...... -"""""1--.
r-- r02 -~
r-I

o

o

1

" .........
r---

Ie

~

TJ

~

250C-

2.4

-

2.1

;!

1

~

1.5

<:

o

~

--<
~

".

I--

--

1.2
09

~
--<

~

0.6 [

0.3
B

VBEloffl, BASE-EMITTER VOL TAGE IVOl TSI

1-470

f

-

o

MJ6502, MJ6503

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defi ned.
tsv = Voltage Storage Time, 90% ISl to 10% VCE(pk)
trv = Voltage Rise Time, 10-90% VCE(pk)
tfi = Current Fall Time, 90-10% IC
tti = Current Tall, 10-2% IC
te = Crossover Time, 10% VCE(pkl to 10% IC
An enlarged portion of the inductive sWitching waveforms

is shown in Figure 7 to aid In the visual identity of these
terms.
For the designer, there IS minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover Interval and

can be obtained using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tclf
In general, trv + tfl = tc' However, at lower test currents
thIS relationship may not be valid.
As 15 common With most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark for designers. However, for designers of high
frequency converter CircuIts, the user ortented specifications which make thIS a "SWITCHMODE" tranSIStor are
the inductive sWitching speeds (tc and tsvl which are
guaranteed at 1000C.

FIGURE 9 - TURN-ON SWITCHING TIMES

FIGURE 10 - TURN.()FF SWITCHING TIMES

1.0

0

0.1 0
0.5 0
0.30

VCC"250V
Iclls - 4
TJ = 25°C

"'

0.20

2,
~_ 007
0.05

\

.......

04 0
t,

""

~ 0.10

0.7 0t--.

~030

w

\

1\

--

fs

VCC"250V
IcIIB" 4
VSEloltl "5 V
TJ " 25°C

'"

;::
--0.2 0

"" "

0.03
td

002
0.01

01

-

02

05

0.3

07

1.0

2.0

5.0

3.0

010

70 10.0

03

01

'c,

IC, COLLECTOR CURRENT IAMPSI

:--.

If

05 0.7 10
20
COLLECTOR CURRENT IAMPSI

7.0

40

10

FIGURE 11 - THERMAL RESPONSE
1

--

7-0"05
5
3 = 02
2

-

I-

01

f-- ':;;:

1=.005

-

... .....

R"JClfl " ,If I
RI!JC(l)

0.02

-

0.0 I
001

~

p£fUl

001

---L'~~-I

SINGLE PULSE

Ul
002 003

t

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AI 11
,~Jlpkl TC P(pkl AI/Jell)

7=-002
5

...K

~,,;t-t

1 40 CJW Max.

DUTY CYCLE, 0 '" 11/12

005

01

02

03

as

10
t,

TIME (ms)

1-471

20

30

50

100

200

300

SOD

IUUU

MJ6502, MJ6503

The Sate Operating Area figures shown in Figures 12 and 13 are

SAFE OPERATING AREA INFORMATION

specified for these devices under the test conditions shown.

FORWARD BIAS

FIGUllE 12 - FORWARD BIAS SAFE OPERATING AREA

-

20

.
f

10

...

-

~~s

5

3.0

t-

~

~

1.0

:5

050

g. .
c

~

100 liS
TC - 25°C

a:

---

,,1 ps

t-

~

-

0.1 O

BONDING WIRE LIMIT
- THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT

0.0 5
0.0 2
4.0

10

7.0

20

30

50

70

de

100

200

"

250 400

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 13 - RBSOA, REVERSE BIAS SWITCHING
SAFE OPERATING AREA
8.0

....
5

\

7.0
IC/IB;;' 4
6.0

I - - - VBE(off) = 2 V to 8 V
TJ

~
a: 5.0
a:

B

4.0

...c

3.0

a:

;
8

2.0

f}
1.0

_

Turn-off load line

_

boundary for MJ6503.
The locus for MJ6502

o

_

REVERSE BIAS

\

\

=100°C

-

-

1\

\

-

\

I

i'YOVli

o

The data of Figure 12 IS based on TC = 250 C. TJlpk)
va"able depending on power level. Second breakdown
pulse limits are valid for duty cycles 10 10% but must be
derated when TC ;;. 250 C Second breakdown limitations
do not derate the same as thermal limitatIOns Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by uSing the appropriate curve on
Figure 15.
T Jlpk) may be calculated from the data In Figure 11.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown
IS

0.20

f

There are two limitations on the power handling ability
of a transistor' average Junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the tranSIStor that must be observed for reliable
operation, I.e .. the tranSistor must not be sublected 10
greater diSSipation than the curves indIcate.

500

400

300

200

100

VCE ' COLLECTOR·EMITTER VOLTAGE (VOLTS)

For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable dUring reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the R BSOA characteristics.

FIGURE 14 PEAK REVERSE BASE CURRENT
3.5

3.0

~

-

Ie = 4 A
-IBI = 1 A
TJ = 250 e

L

:5

V
V
1.0

100

L

""

..........
.~

DERATING

sEeo~~~~i~~oOWN _

..... -.......,

r----

THERMA~

./

..........

"-

/'

"

.......

...........

..........

.........

0

/'

o

~ :--.

/'

25

/

/'

FIGURE 16 POWER DERATING

o

o

4
VBE(olt). BASE·EMITTER VOLTAGE (VOLTS)

1-472

40

80
120
TC. CASE TEMPERATURE I'CI

160

"""

............
200

MJ6700

®

MOTOROLA

7 AMPERE
POWER TRANSISTORS
PNPSILICON

MEDIUM-POWER PNP SILICON TRANSISTORS
· .. designed for switching and wide-band amplifier applications.
•

Low Coliector·Emitter Saturation Voltage - VCE(sat)
(Max) @ IC = 7.0 Adc

=

60 VOLTS
60 WATTS

1.2 Vdc

• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact, High Dissipation TO·59 Case
• Isolated Collector Configuration - 700 V Breakdown

MAXIMUM RATINGS
Rating

Symbol

MJ6700

Unit

COllector-Emitter Voltage

VCEO

60

Vdc

Collector-S. . Voltage

VCB

60

Vdc

Emitter·Base Valtage

VEB

5.0

Vdc

IC

7.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation til TC = 25°C

PD

60
343

Watts

Collector Current - Continuous

Derate above 25"C

Operating and Storage Junction
Temperature Range

~5

TJ, Tstg

mW/"C

°c

to +200

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE

DIM
60

..............

Cii' 50

S
~

40

~

30

ill

"-

~

~

............

c

I'-...........

=

~ 20
~

~1 0
0

B
C
E
G
H
J
K
L
N

P

~

n
R

............

'~
20

40

60

80

100

120

140

160

180

TC. CASE TEMPERATURE I'C)
Safe Area Curves are indicated by Figure 2. All limits are applicable and must be observed.

1-473

200

S

T

MILLIMETERS
MIN
MAX

10.77 11.10
8.13 11.89
2.29 3.81
4.70 5.46
1.98
10.16 11.56
14.48 19.38
2.29 2.79
6.35
4.14 4.80
1.02 1.65
8.08 9.65
4.212 4.310
9.65 11.10

INCHES
MIN
MAX

0.424
0.320
0.090
0.185
Q.400
0.570
0.090

0.437
0.468
0.150
0.215
0.078
0.455
0.763
0.110
0.250
0.163 0.189
0.040 0.065
0.318 0.380
0.1658 0.1697
0.380 0.437

All JEOEC dimenSions and notes apply

Collector isolated from case.
CASE 160·03
(TO·59)

III

MJ6700
ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)
Characteristic

Symbol

Min

Max

60

-

-

100

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

(lC; 50 mAde, IB

VCEO(sus)

= 0)

Collector Cutoff Current
(VCE = 55 Vde,IB = 0)

ICEO

Collector Cutoff Current
(VCE = 55 Vde, VBE(off)
(VCE

Vde

ICEX

= 1.5 Vde)

= 55 Vde, VBE(off) = 1.5 Vde, TC = 1500C)

Collector Cutoff Current
(VCB = 60Vde,IE ; 0)

ICBO

Emitter Cutoff Current

lEBO

(VEB = 5.0 Vdc, IC = 0)

"Ado

-

10

"Ade

-

1.0

mAde

-

10

-

100

25
25
15

-

/lAde
"Ade

ON CHARACTERISTICS 111

DC Current Gain
(lC = 500 mAde, VCE = 2.0 Vde)
(lC = 2.0 Ado, VCE = 2.0 Vdc)
(lC = 5.0 Ade, VCE = 2.0 Vde)

hFE

Collector-Emitter Saturation Voltage

VCE(satl

180

Vde

-

-

0.7
1.2

-

1.2
2.0

30

-

-

300

-

1250

100

to

-

tf

-

(lC = 2.0 Ade, IB = 0.2 Ado)
(lC = 7.0 Ade,IB = 0.7 Adc)
Base-Emitter Saturation Voltage
(lC = 2.0 Adc, I B = 0.2 Adc)
(lC = 7.0 Adc,IB = 0.7 Adc)

Vdc

VBE(sat)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product

MHz

fT

(lC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz)
Output Capacitance
(VCB = 10 Vdo, IE = 0, f = 100 kHz)

Cob

Input Capacitance

Cib

(VBE = 2.0 Vde, IC = 0, f = 100 kHz)

pF
pF

SWITCHING CHARACTERISTICS
Delay Time

(VCC = 40 Vdc, VBE(off) = 4.0 Vdc,

Rise Time

td

IC = 2.0 Ado, IBl = 200 mAdc)

Storage Time

tr

(VCC = 40 Vdc, IC = 2.0 Adc,

Fall Time

IBl = IB2= 2oomAdc)

ns

100

ns

1.0

,",S

150

'ns

IU Pulse Test: Pulse Width = 300 Ils, Du'tY Cycle = 2.0%

FIGURE 2 - ACTIVE-REGION SAFE OPERATING AREA

FIGURE 3 - SWITCHING TIME TEST CIRCUIT

0
50

~ 2. 0

...z

The Safe Operating Area Curves
indicate Ie-VeE limits below

l00~s

it'

10ms

vvhich the device will not enter

0

B O.,
~

secondary breakdown. Collector load lines for specific circuits

do

r--TJ '" 2000 e
~=SECONOARY BREAKDOWN LIMITED -

must fal: within the applicable

2 t--

~

Safe Area to avoid causing a
catastrophic failure. To insure
operation below the maximum
T J. power-temperature derating

MJ670C!"

must be observed for both steady

1

SO ms

E:"'--BONOtNG WIRE L1MITEO

~:~RVES APPLY BELOW RATEO VeE a

00 2
0.0 1
10

state and pulse power conditions.
20

3.0

5.010

10

20

30

50

10

100

VCE. COLLECTOR-EMITTER VOL lAGE (VOL IS)

1-474

INPUT PULSE

1---+-1011S

-37:~LS

+11.6V

Vcc
-40 V

20

25 ~F

~
1

51
tr.tf~10~S
D.C. - 2.0%
-=

+3.3

V

-=

®

MJ8100
MOTOROLA

l1li
5 AMPERE
POWER TRANSISTORS

MEDIUM-POWER PNP SILICON TRANSISTORS
. designed for switching and wide band amplifier applications.

PNP SILICON

• Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 5.0 Amp

60 VOLTS
10 WATTS

• DC Current Gain Specified to 5 Amperes
• Excellent Safe Operating Area
• Packaged in the Compact TO-39 Case for Critical Space-Limited
Applications.

MAXIMUM RATINGS
Rating

Symbol

Value

Vdc
Vdc

Unit

VCEO

60

Collector-Base Voltage

Ilea

60

Emitter-Base Voltage

VES

5.0

Vdc

IC

5.0

Adc

Collector-Emitter Voltage

Collector Current - Continuous

Base Current

Total Device DiSSipation @TC
Derate above 2SoC

=

IS

1.0

Adc

Po

10
57.2

Watts
mW/oC

TJ,Tstg

-65 to +200

°c

2SoC

Operating and Storage Junction
Temperature Range

SEATING
PLANE

I

--II~D

THERMAL CHARACTERISTICS
Characteristic

STYLE 1
PIN 1. EMITTER
2. BASE
3. COLLECTOR

Thermal Resistance, Junction to Case

FIGURE 1- POWER-TEMPERATURE DERATING CURVE
0

"-

0

DIM

'" "

A
B

C
D
E
F
G
H

i'-,

~ b"

J
K

~

0

L

"-

0
20

40

~

60
80
100
120 140
160
180
200
TC, CASE TEMPERATURE (OCI
Safe Area Curves are indicated by Figure 2. All limits ate applicable and must be observed.

1-475

M
P

0
R

MILLIMETERS
MIN
MAX
889
9.40
851
8.00
6.10
6.60
0.406 0.533
0.229 3.18
0.406 0.483
4.83
5.33
0.711 0.864
0.737 1.02
12.70
6.35
45 0 NOM
1.27
900 NOM
2.54

INCHES
MIN
MAX
0350 0.370
0.315 0.335
0.240 0260
0016 0.021
0.009 0.125
0016 0.Q19
0.190 0.210
0028 0.034
0.029 0.040
0.500
0.250
45 0 NOM
0.050
900 NOM
0.100

All JEOEC dImenSIOns and notes apply.
CASE 79·02
TO·39

MJ81 00

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol

Characteristic

Min

Max

60

-

-

100

-

10

-

1.0

-

10

-

100

25
25
15

-

Unit

OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage 111
(lC = 50 mAde,IB = 0)

Vdc

VCEO(sus)

Collector Cutoff Current

/lAdc

ICEO

(VCE = 55 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 55 Vdc, VBE(off) = 1.5 Vdc)

ICEX

(VCE = 55 Vdc, VBE(off) = 1.5 Vdc, TC = 1500C)
Collector Cutoff Current
(VCB=60V,IE=0),

ICBO

Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)

lEBO

/lAdc
mAdc
/lAdc
/lAdc

ON CHARACTERISTICS III

-

DC Current Gain
(lC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(lc = 5.0 Adc, VCE = 2.0 Vdc)

hFE

Coliector·Emitter Saturation Voltage
(lc = 2.0 Adc, IB = 0.2 Adc)
(lc = 5.0 Ade, IB = 0.5 Ade)

VCE(satl

Base-Emitter Saturation Voltage
(lc = 2.0 Adc, IB = 0.2 Adc)
(lc = 5.0 Adc, IB = 0.5 Adc)

VBE(sat)

180

Vdc

-

0.7
1.2

-

1.2
1.8

30

-

-

300

-

1250

-

100

-

100

ns

1.0

/lS

150

ns

Vdc

OYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz)

MHz

fT

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

Input Capacitance

Cib

(VBE = 2.0 Vdc, IC = 0, f = 100 kHz)

pF
pF

SWITCHING CHARACTERISTICS
Delay Time

(VCC = 40 Vdc, VBE (off) =.oI!.O Vdc,

td

Rise Time

IC = 2.0 Adc, IB 1 = 0.2 Adc)

tr

Storage Time

(VCC = 40 Vdc, IC - 2.0 Adc,

to

Fall Time

IBI = IB2= 0.2Adc)

tf

II) Pulse T ••t: Pulse Width

os:

3001'5, Duty Cycle';;

2.0%

FIGURE 2 - ACTIVE·REGION SAFE OPERATING AREA

FIGURE 3 - SWITCHING TIME TEST CIRCUIT

o
~

100",

'.0

The Safe Operating Area Curves

~.~ms

$. 2.D

indicate IC-VCE limits below

which the device will not enter

....

:::~ ~.: r- TJ =200"C
: :o:~

0.2

r'
1--. § ----

Secondary Breakdowliiimited
Bonding Wire limited
T_~erm~1 Limitations
Y 0.0' 1==
Ie..'" 25 0 C
E
lAP~licable ,For -"ated BVCE
0.02 ---r-tI1 Pulse Duty Cycle" 10%

....

0.1

secondary breakdown. Collector load lines for specific circuits
must fall within the applicable

1.Dms

de

Safe Area to avoid causing a
catastrophic failure. To insure
operation below the maximum
T J. power-temperature derating

t

must be observed for both steady

state and pulse power conditions.
0.01

1.0

2.0

3.0

5.0

10

20

30

50

ns

100

VeE. COLLECTOR-EMITTER VOLTAGE tVOLTS)

1-476

INPUT PULSE

1--+10".. +11.6 V
OV.

r

-37V---L-J

251'F

~
1

51
tr,tf~10~S
D.C. - 2.0%
-=

+3.3 V

®

MJ8500
MJ8501
MOTOROLA

III

Desiglle .. ~ Data Sheet
2.5 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

700 and 800 VOLTS

The MJ8500 and MJ8501 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switchmode applications such as:

125WATIS

Designer's Data for
"Worst Case" Conditions

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers

The Designers' Data Sheet permits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characterIStics boundaries are given to facilitate "worst case"
design.

• Motor Controls
• Deflection Circuits
Fast Turn-Off Times
300 ns Inductive Fall Time - 250 C (Typ)
500 ns Inductive Crossover Time - 250 C (Typ)
900 ns Inductive Storage Time - 25°C (Typ)
Operating Temperature Range -65 to +2000 C
100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Collector-Emitter Voltage

VCEO(susl

Collector-Emitter Voltage

VCEV

Emitter Base Voltage

VEe

Collector Current - Continuous

IC
iCM

Peak (1)
Base Current - Continuous
Peak (1)

Ie
IRM

Total Power Dissipation

PD

@ TC "" 2SoC
@TC= 100°C

Derate above 2SoC
Operating and Storage Junction

TJ, T stg

MJ8500

MJB501

Unit

BOO

Vdc

1400
8.0
2.5
2.5
5.0
5.0
2.0
2.0
4.0
4.0
125
125
71
71
0.71
0.71
-65 to +200

Vdc

700
1200
8_0

Vdc
Adc

NOTES
1 OIMENSIONS Q AND v ARE OATUMS
2.
JSSEATING PLANE AND DATUM
3. POSITIONAL TOLERANCE fOR
MOUNTING HO LE Q

m

Adc

1*11.1310005113 1,Ivei
FOR LEADS
I tlll3lO005le'lv®l nel

Watts

W/oC
°c

Temperature Range
STYLe 1
PIN I BASE

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering

Symbol

Max

Unit

ReJC

1.4

°CiW

TL

275

°c

Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle'; 10%.

1-477

2

EMITIfR

CASE COLLECTOR

MJ8500, MJ8501

II]

ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted I

I

I

Characteristic

Symbol

Min

TVp

Max

Unit

VCEOlsusl

700
SOO

-

-

Vdc

-

0,25
50
5.0

mAde

La

mAde

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)

IIC = 100mA,IB =01

MJS500
MJS501

Collector Cutoff Current

ICER

-

-

lEBO

-

-

-

Collector Cutoff Current

IVCE = Rated VCEV, RBE = 50

mAde

ICEV

IVCEV = Rated'Value, VSEloffi = 1,5 Vdcl
IVCEV = Rated Value, VBEloffi = 1,5 Vdc, TC = 1500 CI

n, TC

= 100°C I

Emitter Cutoff Current

IV EB = 7.0 Vdc, IC = 01
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS 111
DC Current Gain

IIc

= 0,5

Collector-Emitter Saturation Voltage

IIc = 1.0 Adc, IB = 0.33 Adcl
IIc = 2.5 Adc, IB = 1.0 Adcl
IIc = 1.0 Adc, IB = 0.33 Adc, TC

=

-

-

-

-

2.0
5,0
3,0

-

1.0 Adc, IB = 0.33 Adcl
IB = 0,33 Adc, TC

= 1.0 Adc,

-

-

1.5
1.5

td

-

0,045

0.20

"s

tr

-

0,2

2,0

"s

ts

-

1,0

4,0

"s

0,5

2,0

"s

Vdc

VCElsatl

= 100°C)

Base-Emitter Saturation Voltage

IIc
IIc

7,5

hFE

Adc, V CE ' 5,0 Vdcl

Vdc

VBElsatl

= l000 CI

DYNAMIC CHARACTERISTICS

Output Capacitance
IVCB = 10 Vdc, IE = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time

Storage Time

IVCC = 500 Vdc, IC = 1.0 A,
IBI = 0,33 A, VBEloffi = 5,0 Vdc, tp = 50"s,
Duty Cycle ... 2.0%1

Fall Time

tf

Inductive Load, Clamped (Table 1)

Storage Time

IIC = 1.0 Alpkl, V clamp = 500 Vdc, IBI = 0,33 A,

tSY

-

1,3

4.0

"s

Crossover Time

VBEloffi = 5 Vdc, TC = 1000 CI

tc

0,6

2.0

"s

O,g

tc

-

"s

tfi

-

0.3

-

Storage Time
Crossover Time
Fall Time

IIC = 1.0 Alpkl, V clamp = 500 Vdc, IBI = 0,33 A,
VBEloff) = 5 Vdc, TC = 25 0 CI

111 Pulse Test: PW - 300 ~s, Duty Cycle ... 2%,

1-478

tSY

0.5

"S
"s

MJ8500, MJ8501

l1li
FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN

en

20

...-

r-

,.....-

100 0 C

2.2

~

VCE = 5 V

o

~

1.8

w

f:::r-

25 0 C

to

1\ LOA

~o

~

I"-

'\.r-..
r\'

0

0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMPS)

~_

0.6

3.0

> 0.2
0.15

;

r--.

I"---

"

0.7
0.4
0.3
lB. BASE CURRENT (AMPS)

0.2

1.0

--

1.5

~
W

to

~

1.2

IC/IB = 3

~

~
w

1000 C

./ ./

0

0.25 0.30

0.4

0.5

0.6 0.7 0.80.91.0

1.5

2.0

25 0 C

~

-:::: ~ -

8

1.a

'"

/

0.8

ICIIB =3

0

>

I

~ 0.4
=
~

\
t'-...

~
....

o

>

.........

\

0

1.6

1=

!

\

FIGURE 4 - BASE-EMITTER VOLTAGE

o

~
o

\

1.5

2.0

~

w

\

\

\
\

\

\.

FIGURE 3 - COLLECTOR·EMITTER SATURATION VOLTAGE

g

\

~

2.0

\

\

8

\

2.01
0.03

1.0

\
\

\

o

~

3,0

~

\

2.5

2.0

\
\

\

~ 1.4

0

~ 1.5A

.l.-1000 C

:i:

>

0.5
0.25

2.5

0.3

ICE. COLLECTOR CURRENT (AMPS)

-

i--I-

0.4
0.5 O.B 0.7 O.B 0.91.0
IC. COLLECTOR CURRENT (AMPS)

--- -1.5

2.0

2.5

FIGURE 6 - CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION
10000

/

TJ - 25 0 C

/

5000
3000

/

-

.,

-TJ-;'50 0 C

/

1250 C

-

75 0 C

-

~100 0

/

~

e-

:~

FORWARD

r-REVERSE

500

~ 30 0
o;

I

./

100 0 C

1

C,b

/

/VCE=250V:::::

10 0

Cob

U

0

25 0 C
10- 1
-0.4

-0.2

0

+0.2

+0.4

+0.6

VUE. BASE·EMITTER VOLTAGE (VOLTS)

1-479

10

o1

0.20.3

0.71 0 2.03.0
7.0 10 20 30
70 100 200
VR. REVERSE VOLTAGE (VOLTS)

500 1000

MJ8500, MJ8501

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must. be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCE (pk)
trv = Voltage Rise Time, 10-90% VCE (pk)
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% VCE (pk) to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi "" tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2.5 0 C and has become a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsv) which are
guaranteed at 1000 C.

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC!!--

. /V

/'"

90% VCE(pk)

r--

'I.

:\ 90% IC

Irvfi:.J.;:II, ...... ~II'-

I- f---Isv

IC"""""

VCE(pk)

I"1

1

----j '--1,---'1i

/
10% VCE(pk)

VCE

-

"-

10% .....
IC pk

I B - I- 90% 181

~rc-

-- --\-, -- --- -- - -

-

~

~

TIME

FIGURE 8 - PEAK REVERSE BASE CURRENT
2. 5
f - - l l c • LOlA
181 • 0.33 A

ie
~
....
ffi
a:

2.0

. /V

a:

..,=>
w

!

-I--

~

1. 5

1.0 ..............

/

~
~o .5
0

2.0
4.0
6.0
VBE (Off). BASE EMITTER VOLTAGE (VOLTS)

8.0

RESISTIVE SWITCHING PERfORMANCE
FIGURE 9 - TURN· ON SWITCHING TIMES

FIGURE 10 - TURN - OFF SWITCHING TIMES

0.60a

2.0

0.50a

VCC' 500V
Ic/ISl' 3
TJ • 25°C

...........
0.300

j

0.20a

1.0

/

r-

w

'_"" 0.100

;::

/

"'-...
Ir

V

"'-..,.

0.700

~

0.500

;::

I""-

0.05a

0.2

0.3

rVCC' 500V
ICIIBI' 3
TJ • 25°C

0.200

r--

0.030
0.15

-If
0.300

Id

0.070

r--Is

j

0.5
0.7
1.0
IC, COLLECTOR CURRENT (AMPS)

2.0

3.0

1-480

0.100
0.15

I I III
0.2

0.3
0.5
0.7
1.0
IC, COLLECTOR CURRENT (AMPS)

2.0

3.0

MJ8500, MJ8501

III

TABLE 1 - TEST CONOITIONS FOR DYNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEOI.u.1

RESISTIVE SWITCHING

r-~-----~-~---~--O+15

n

47

RI

TURN ON TIME
+10V>~Ol

20

!il

o-IL

---r

f-O

::1-

Go!:

ZQ

-z

8

R2J2

'S1 adjusted to
obtain the forced
hFE du,red

50 n

TURN OFF TIME

PW Vaned to Attain
IC=100mA

Use inductive sWitching
driver as the Input to

the r.Slstive test circuit.

All Diodes - 1 N4934
All NPN - MJE200
All PNP - MJE210

l250

Adjust R 1 to obtain I B 1
For sWltchmg and ABSOA. R2 =

"F

Adjust to

obtain
VBEloff) = -5.0 V

a

For BVCEO(sus), A2 = co

Leoll = 80 mH
Reoll = 0 7 n

Vee'"

10 V

Vcc=

Leoil = 180 ",H
Reoll =

oosn

Vel amp "" 500 V

Vee"" 20 V

INDUCTIVE TeST CIRCUIT

500 V

RL=500n
Pulse Width = 50,""

OUTPUT WAVEFORMS

RESISTIVE TEST CIRCUIT'
t1 Adjusted to
Obtain Ie

MR816

t, ""

Lcoll (lCpk)

vee
t2'" lcoll !lCPkl

VCEt vel::

vclamp

LCmp

Tom.

Test EqUipment
Scope - TektroniX
475 or EqUivalent

1-',-1

FIGURE 11 - THERMAL RESPONSE
1.0
w

'"Z

~

0.7
0.5

R6JClt) - r(tl R6JC
R6JC- 1.4°CIW Max.
TJlpk) - TC - Plpk) R6JC(tI

0.3

~ 0' 0.2

~~
w-'
~~

o. 1

ffi ~ 0.0 7
~ -

0,05

~
>-

0.03

~

0.02
0.0 1
0.01

-

......

...... I-""""
0.10

1.0

10
t. TIME Im.1

1-481

100

1000

MJ8500, MJ8501

III
SAFE OPERATING AREA INFORMATION
FIGURE 12 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor

'"
~

1

:!. 1.0

ffi
g§

=>

~

501"

m,

operation, I.e., the transistor must not be subjected to
greater diSSipation than the curves mdlcate.

d.c.

The data of Figure 12 IS based on T C = 250 C, T J( pk I
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C Second breakdown limitations
do not derate Ihe same as thermal limllatlons. Allowable
curren I at the voltages shown on Figure 12 may be found
at any case temperature by uSing the appropriate curve on
Figure 14.
TJ(pkl may be calculated from the data In Figure 11.
At high case temperalures, thermal limitations will reduce
the power thai can be handled 10 values less than Ihe
limitatIOns Imposed by second breakdown

TC - 25°C

0.10

IS

_
- Bonding Wire limit
- - - - Thermal Limit
Second Breakdown Limit

tl

~E 0.01

MJ850~~
MJ8501.-=F

0.001
8.0 10

20

40

60 80100

200

400 600 800

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 13 - RBSOA, REVERSE BIAS SWITCHING
SAFE OPERATING AREA

,

5

\

0
TJ"lOOoC
IC/tB>2.5

.51-- I -

.01--

(

,

REVERSE BIAS

(

V8Elotf) ~ 2 to 7 V -

,

For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the complete RBSOA characteristics.

J\

\

1\

FOR MJB500 RBSOA
LIMIT IS 200 VO LTS LESS

"\

.5

0

average Junction temperature and second

breakdown. Safe operating area curves indicate IC-VCE
I,m,ls of the tranSIStor that must be observed for reliable

I.......

t- r-

200

1400

400
600
800
1000
1200
vCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)

FIGURE 14 - POWER DERATING
100

~ t-...

"

~ BO

'"o

G

'!

60

...........
..........

Therm.~
Derating --ti

'"z
;::

Second Breakdown _
Derating

~

['-.

.......

""o

,-

........

r-.....

t'-..

~ 40

'"~

I"'--

.......

~ 20

~

o

o

..........
40

120
80
TC. CASE TEMPERATURE 10C)

1-482

160

200

®

MJ8502
MJ8503
MOTOROLA

DesigllPl's Data Sheet
5.0 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

700 and 800 VOLTS
150 WATTS

The MJ8502 and MJ8503 transistors are designed for high-voltage,
high-speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for line operated switchmode
applications such as:

Designer's Data for
·'Worst Case" Conditions

• Switching Regulators

The Designers· Data Sheet per·
mlts the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device charactenstics boundaries are given to facilitate ··worst case·'
design

• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn-Off Times
150 ns Inductive Fall Time-25 0 C (Typ)
400 ns Inductive Crossover Time-25 0 C (Typ)
1200 ns Inductive Storage Time-25 0 C (Typ)
Operating Temperature Range -65 to + 2000 C
1000 C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

~.
t.
D

MAXIMUM RATINGS

r-----

Rating
Collector-Emitter Voltage
Collector-Emitter Voltage

Symbol

MJ8502

MJ8503

Unit

VCEOlsusl

700
1200

800
1400

Vde

8.0

8.0

Vde

"CEV
VEB

Emitter Base Voltage

Vde

Collector Current - Continuous
Peak 111

IC
ICM

5.0
10

5.0
10

Ade

Base Current - Continuous

IB
IBM

4.0
8.0

4.0
8.0

Ade

Po

150
86
0.85

Peak 111

Total Power Dissipation

@

@

TC
TC

==
~

2SoC
1000C

Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ. Tstg

150
86
0.85
-65 to +200

Watts

W/oC

°c

Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width 5 ms. Duty Cycle" 10%.

Symbol

Max

ReJC

1.16

TL

275

Unit

°C/W

°c

F-

L_J~ IV

V:d[

r-v./

or

u

NOTES
1 DIMENSIONS Q AND V ARE DATUMS ,
2 WISSEATING PLANE AND DATUM
3 POSITIONAL TOLERANCE FOR

MOUNTING HalE 0

ItillltDOO"@iTiv@i
FOR lEADS
i til'3Io."'I@Ti v@i n@i
4 DIMENSIONS AND TOLERANCES PER

-'~.
=i=
~
-4-

--¥-,
F

•
•
•
H

J

Q

635
0.97

-

3D15BSC
10928SC
5468SC
1689BSC
11.18 1219
3.81
419
2667

U

483

533

V

3.81

4.19

1181
0430
0.215
0665
0440

0150
0190
0150

CASE 1·05 TO·3

1-483

1
•

'i'x:. '~---(~

Q

STYLE 1
PIN I BASE
2. EMITTER
CASE COLLECTOR

THERMAL CHARACTERISTICS

•

~

MJ8502, MJ8503

II]

ELECTRICAL CHARACTERISTICS (TC: 25°C unless otherwise noted I
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)

MJBS02
MJB503

(lC: 100mA,IB :01

VCEO(susi

700
BOO

-

-

-

-

0.25
5.0

Vdc

Collector Cutoff Current
(VCEV : Rated Value, VBE(offi : 1.5 Vdcl
(VCEV : Rated Value, VBE(offi : 1.5 Vdc, TC : 1500 CI

ICEV

Collector Cutoff Current
(VCE: Rated VCEV, RBE: 50

ICER

-

-

5.0

mAde

lEBO

-

-

1.0

mAde

n, TC:

mAde

1000 el

Emitter Cutoff Current

(V EB : 7.0 Vdc, Ie : 01
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See F .gure 13

ON CHARACTERISTICS (1 I

DC Current Gain

hFE

7.5

-

-

-

-

-

-

2.0
5.0
3.0

-

-

1.5
1.5

-

0.040

0.20

~s

0.125

2.0

~s

1.2

4.0

~s

0.65

2.0

~s

-

(lC : 1,0 Adc, VeE: 5.0 Vdc)
COllector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

(Ie
(lc

Vdc

VCE(sati

(lC: 2.5 Adc,IB: 1.0 Adcl
(lC: 5.0 Adc, IB: 2.0 Adcl
(lC: 2,5 Adc,IB: 1.0 Adc, Te: 1000 el

Vdc

VBE(sati

= 2.5 Adc,IB = 1.0 Adc)
= 2.5 Adc, IB = 1.0 Adc, Te = 100°C)

DYNAMIC CHARACTERISTICS
Output Capacitance

(VCB: 10 Vdc, IE: 0, f test : 1.0 kHzI
SWITCHING CHARACTERISTICS
ReSistive Load (Table 1)
Delay Time

Rise Time
Storage Time

(VCC = 500 Vdc, IC = 2.5A,
IBl = 1.0 A, VBE(off) = 5.0 Vdc, tp
Duty Cycle" 2.0%1

td

= 50 ~s,

tr
ts

Fall Time

tf

Inductive Load, Clamped (Table 11

Storage Time
Crossover Time

Storage Time
Crossover Time

Fall Time

(Ie = 2.5 A(pk), Vcl amp = 500 Vdc, IBl
VBE(offi = 5 Vdc, TC = 100°C)
(Ie

= 1.0 A,

tc

= 2.5 A(pk), Vcl amp = SOO Vdc,lBl = 1.0 A,

VSE(offl: 5 Vdc, Te =

250

tsv
tsv
tc

el

tfl

(1 I Pulse Test: PW . 300 ~s, Duty Cycle';; 2%.

1-484

-

1.6

5.0

~s

0.60

2.0

~s

1.2

-

~s

0.4

-

~s.

0.15

-

~s

MJ8502, MJ8503

III
I
i""
z

<
....
'"

~

VCE" S V

o

~

I

2.8

24

'""'
~
o

~

25°C

Ii
1\

>

ffi

7.0

1.6 -

~

I'

..,:>
g

g

Tj" 100°C

10

5.0

~

I\.

~

8

12

2

1

....'"
O. 6

'-

t-.....

......:

~

O.8

'"~

06

VBElsat)@IC/IB' 2.5

:>

10 2

>
>' O. 4

,.. V"~d-

2

0.1

02

0.3
05 07
IC' COLLECTOR CURRENT lAMP)

00.05

J....-"":

~OC

,..

--

01

/

/

1000 C

u:

0.7

Cib

,

FORWARD

-REVERSE

1000

Tj'25OC~

oS

I

"

ISoC

~

500

~U

200

;t
/
LVCE'2S0V=

Cob

~

10 0

U

50

2SoC

-0.2

0.5

I

/

/

0

10 1

03

FIGURE 6 - CAPACITANCE
10000
1000

/
,/

12SoC

'"

02

200 0

Tj'IS00C

10- 1
-0.4

d-;;;:

T}'250

IC. COLLECTOR CURRENT lAMP)

/

-

- r--

":--

I

/
10 3

\.

---

--

I-

FIGURE 5 - COLLECTOR CUTOFF REGION

<
.3
....

\.

I

o

VICf\sa,)@:CIIBI " 2.S

\
\

\

07
lB. BASE CURRENT (AMPI

1

lOOOS7i:7

104

~
..,

\

~

04

4.S A

FIGURE 4 - BASE-EMITTER VOLTAGE
4

o
oOS

0

1\

O.S

0.3

4

01

~
..,

\
\

0

02 0.3
0 S 07 1
IC. COllECTOR CURRENT lAMP)

:; 0 8

o

1
1-\ 3.SA\4 A

1\

\

0.4

FIGURE 3 - COLLECTOR -EMITTER SATURATION REGION

>
>'

~3A
\

1\
\

~ o. 8

i!

'"~«

-

-

1.2

>

20
OOS 007 01

~:lc'2A

o

~

3.0

~
o

,

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
20

0
0

+0.2

+0.4

0
1 0.1

+0.6

VBE. BASE,EMITTER VOLTAGE IVOLTS)

1-485

0.3

0.7 1.0

3.0 7.010 30
10 100
VR. REVERSE VOLTAGE (VOLTS)

300 100 1000

MJ8502, MJ8503

-

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

IC~
..,/ V

"\
90% VCElpkl J1\ 90% IC

/"

-

IC"""'-

VCElpkl

I

trv~~tfl- ~ltIf---, '---Ic~

f--Isv

r-

I'\.

1/

-

I--

90%IBI

--\- --

-- -

10%'
IC pk

10% VCElpkl

VCE
IB-

f---

1%IC

-- -- --

----

............

TIME

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads whic.h are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% VCE(pk)
trv = Voltage Rise Time, 10-90% VCE(pk)
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc =. Crossover Time, 10% VCE(pk) to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.

FIGURE 8 - PEAK REVERSE BASE CURRENT
5. 0

0

./
0

V

/"

---

-

IC=1.5A
IBI =1.0 A

/

0

./

~

1. 0
1.0
4.0
6.0
VBEloltl. BASE EMITTER VOLTAGE IVOLTS)

8.0

For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi "" tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this·a "SWITCHMODE" transistor. are
the inductive .switching spe·eds (tc and t sv ) which are
guaranteed at 1000C.

RESISTIVE SWITCHING PERFORMANCE

FIGURE 10 - TURN-OFF SWITCHING TIMES

FIGURE 9 - TURN-ON SWITCHING TIMES
1.00a

1. 0
0.700
0.50 0
0.300

.., 0.100
.:I
~ 0.10

~

r-...

..... 1'.

r-...
Id

a

tr-....

1,1

..

0.0

./

~ 0.60a
;::

°v

0.40

t-

0.1

0.3

V

/
II

0.5 0.1 1.0
1.0 3.0
IC, COLLECTOR CURRENT IAMPSI

0.100
0.1

5.0

1-486

r-- t-

VCC = 500
Ic/lB =1.5
VBElo!I). ; 5.0 V
TJ =15 0 C

0.300

1

10.1

1.00a

~

-;; 0.80 0

0.0 7
0.05

0.03r- VCC = 500 V
0.01f- IC/IBI = 2.5
r- Tr 15 C

;.. I,..- V

0.1

0.3 0.4
0.7 1.0
Ie. COLLECTOR CURRENT IAMPSI

s.o

MJ8502, MJ8503

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEO(sull

RESISTIVE SWITCHING

r-.-----------~--~------_1---O+1S

47

Jl
o

n

Rl

15V

-

)-<~--~rl~rlf__~-_+__!

TURN ON TIME

"'10V>~1

20

oJl....

II>

Z

R2l2

1-0
:::l-

... !::

I B 1 adjusted to
obtam the forced

ZQ
-z

8

"FE desIred

PIN

V.ri~

son

to Ana,n

TURN OFF TIME
Use Inductl"e sWitching

Ie = 100 mA

drive, a' the fnput to
the resIStive 1"1 Circuit.

All Diodes - 1 N4934
All NPN - MJE200
All PNP - MJE210

I~

250 JAF

~djUst
obtain

Adjust R 1 to obtam I B 1
For sWitching and RBSOA' R2 = 0
For BVCEO(sus). R2 "" DO

VSE(offl- -5.0 V

Vcc: SOOV
L COI' = 80 mH
RCDII = Q.7 n

Vee

LCOII = 180 j.lH

= 10 V

Rcoll = 0 05

n

Vclamp"" 500 V

RL: 200

Vee = 20 V

INDUCTIVE TEST CIRCUIT

n .

Pulse Width"" 50 Ils

OUTPUT WAVEFORMS

RESISTIVE TEST CIRCUIT
t1 Adjusted to

Obt•• n

'e

MA8lS

., .. LcOII(lCpk'

Vee
12 "" LcOll(lCpk'
Vclamp
Test EqUipment

Scope - TektroniX
47501' Equlv.lent

FIGURE 11 - THERMAL RESPONSE

~
N

1.0

::i
~

0.7

~

0.5

~

...

'-'

0.3

~ 0.2

iii
a:
....

'"

~

3.0

~

\

:3

3.0

~

>

2.5
0.1

\

1.0

0.2

0.3

0.5 0.7 1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMPS)

5.0 7.0

10

0.3

.....

0.1
0.07

0.1

0.2

7.0

2.0

~

~

'CI'B - 2.5

w

>

~
w

1.0

!

0.1

w

_

3.0

5.0 7.0

IC/IB" 2.5
1.6

~

1.2

'~"

.8

-

-

25°C

.4

-

-

100°C

100°C

~

........

~

~

~

25°f
0.2

2.0 3.0
0.5 0.7 1.0
0.3
IC. COLLECTOR CURRENT (AMPS)

5.0

7.0

o

10

0.1

I-:::;:::: ~

I

>

> 0.1
0.1

_r-

w

..,.,...""y

0.3
0.2

~

-

'"

~ 0.5

!

2.0

co
0

'"1=

0.3
0.5 0.7 1.0
lB. BASE CURRENT (AMPS)

2.0

2. 5.0 ' - - -

o

r--

........ "-

FIGURE 4 - BASE EMITTER VOLTAGE

10

3.0

1\

\

0.2

FIGURE 3 - COLLECTOR·EMITTER SATURATION REGION

C!J

\ lOA

0.7
,0
c 0.5

.t 5.0

~

SA

~

'"c

o

2.5A

IC"l A

2.0

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0

7.0

10

IC. COLLECTOR CURRENT (AMPS)

FIGURE 5 - COLLECTOR CUTOFF REGION

FIGURE 6 - CAPACITANCE
10000

/'

5000

/'
/

3

-

- T J " 150°C
125°C

,.,.

/'
./

/'

/

-REVERSE

1000

z

«
....

500

;t
;'\

200

U

FORWARD

-0.2

Cob

r--

100
50

/ VCE "250 V==
25°C

10' 1
-0.4

TJ" 25°C

-w
;:;

75°C

-

C,b

2000
u

L

100°C

1

L

20
+0.2

+0.4

10
01

+0.6

02

a5

I0

2.0

5.0

10

20

50

VR. REVERSE VOLTAGE (VOLTS)

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-491

100 200

500 1000

MJ8504, MJ8505

IIJ

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% VCE(pkl
trv = Voltage Rise Time, 10-90% VCE(pkl
tfi = Current Fall Time, 90 -10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% VCE(pkl to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222A:
PSWT = 1/2 VCCIC(tclf
In general, trv + tfi = tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2S o C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsvl which are
guaranteed at 100oC.

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

IC~

..... --I
./

-

IC ........

~E(Pk)_ f - - -

1""1

90% VCE(pk)

A1\ 90% Ie

trvfl~tt.-

-tsv

'-t,-,

H
/

VCE

-

-

--- --

- -

-

f...--

""""

r-

10% ......
"2%IC
IC pk

90%IBI

--\- --

r--",-

"-

10% VCE(pk)

IB-

-

TIME

FIGURE 8 - PEAK REVERSE BASE CURRENT
B.O

./

V

V

o
o

-

v

V
IC ~ 5 A
IBI ~ 2.0 A

4.0

2.0

6.0

8.0

10

VBE (off). BASE·EMITTERVOLTAGE (VOLTS)

RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN-ON SWITCHING TIMES

FIGURE 10 - TURN-Off SWITCHING TIMES
5.0

20

1l.
w

";::

0.30
0.20
0.10

3.0

VCC~500V

1.0

IC/IB - 2.5
TJ - 25'C

0.70
0.50

"

""

~

"

TJ

~

25'C

"
"-- ,.-

0.70
" 0.50
;::
w

I

......... ~

0.30

'f

020

0.07
0.05

0.1 0

0.03
0.02
-1.0

Vee ~ 500 V
20 -lc/lB ~2.5
-VBE (,ff) ~ 5 V
1.0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

0.07
005

-1.0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

IC. COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

1-492

5.0

7.0

10

MJ8504, MJ8505

III

TABLE 1 - TEST CONOITIONS FOR OVNAMIC PERFORMANCE
RESISTIVE SWITCHING

RBSOA AND INDUCTIVE SWITCHING

VCEO(susl

r-~----------~---,------~~-o+15

47

n

Rl

TURN ON TIME
+10V>~01

20

oJ""L

'"Z

1-0
::1-

'--r

... !:
ZQ

-z

8

IS1 adjusted to
obte,n me forced

50

n

TURN OFF TIME

PW V."ed to AttBin
IC=100mA

Use Induct'".. sWltch,"g
driver 8' the ,nput to
the reSIStllle test ClfCUlt

All Diodes - 1 N4934
All NPN - MJE200
All PNP - MJE210

I~ 250 jlF to
obtain

Adjust R 1 to obtain I B 1

VSE(off) = -5.0 V

For switching and RBSOA. R2 '" 0
For BVCEO(sus). R2 "" 00

Lead = 80 mH

Vee

Vee -

Leoll'" 180,uH
Reoll = 0 05 n
Vcc=20V

= 10 V

RCO!J"'07n

500 V
RL-l00 n
Pulse Width'" 50 1'5

Vel amp "" 600 V

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

11 Adjusted to

'1rfY1

MRB16

1--"

"~'.mped

"j-

Ie

-----vee-L. COI I(1C p k)

11 ....

12 "" LCD" (lCpk)

veEf Vc-:::

Vclemp

~mp
T,me

Obte,n

Test EqUIPment

Scope - TektroniX
475 or Equlllelenr

1-'2~

FIGURE 11 - THERMAL RESPONSE
1.0

.,w

ROJC(t) = r(t) ROJC
ROJC • 1.0·CM
TJ(pk)' TC = P(pk)ROJC(tl

i=

.......

~~

a:: !:::! 0.10

f"'"

"""~

.....
.. =
w ....

:z:<
ZO

~~

~

...=

~

.......

0.01
0.01

...0.1

1.0

10.0
t, TIME (ms)

1-493

100

MJ8504, MJ8505

SAFE OPERATING AREA INFORMATION
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA

5014

ie

'"
....

10

S

~
a::

Zl

1

1.0

'"o

~
j
:3

m,

de
D.l ~

_

_ BONOINGWIRE LIMIT

F:~ - - -

~

THERMAL LIMIT
SECONO BREAKDOWN LIMIT
MJBS04
MJBSOS

0.01
O.ODS
I.D

10
100
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1000

FIGURE 13 - RBSOA, REVERSE BIAS SWITCHING
SAFE OPERATING AREA

REVERSE BIAS

lD

if

s'"....

S.O

::>
<..>

6.0

~

'"
....

0

~

.'"
0

\
- - -

VBE I.ff) =2ID 7 V
ICilB,!1.0

\
1\

\

TJ~100oC

1\

4.D

\

<..>

I!::'

~
~

!:

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average Junction temperature and ,second
breakdown. Safe operating area curves ,nd,cate IC-VCE
limlls of the tranSistor that must be observed for reliable
operation; I.e., the tranSIStor must not be subjected to
greater dissipation than the curves Indicate.
The data of Figure 12 IS based on Te = 2So C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;, 2So e. Second breakdown limitatIOns
do not derate the same as thermal limitations. Allowable
current a1 the voltages shown on Figure 12 may be found
at any case temperature by uSing the appropriate curve on
Figure 14.
TJ(pk) may be calculated from the data In Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

"-

2.D
FOR MJS504 RBSOA
LlTIT I~ 200 IVOL LE~S

is

200

400

SOO

600

"'

:--

100D

1200

1400

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the complete RBSOA characteristics.

FIGURE 14 - POWER DERATING
100

~ 80

....'"o

~ :--...

"-..: r--..... .....
f",..
r-....
Therma~

u

!

60

DeratLng -11

~
;:

..

~

Second Breakdown

Derating

...........
..... r-..,

r-....

...........

"-

40

'"

~

-

,-

.......

0

0
40

120
80
TC. CASE TEMPERATURE I'CI

1-494

160

"

""

200

I

MJI0000
MJI0001

MOTOROLA

Designer's Data Sheet

20 AMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS

350 and 400 VOLTS
175 WATTS

The MJ10000 and MJ1000l darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical_ They are particularly suited for line
operated switch-mode applications such as:

Designer's Data for
"Worst Case" Conditions

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits

The Designer's Data Sheet permits the design
of most circuits entirely from the information
presented. Limit curves - representing boundaries on device characteristics - are given to
facilitate "worst case" design.

1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Symbol

MJ10000

MJloo0l

Unit

Collector-Emitter Voltage

VCEO(sus)

350

400

Vdc

Collector-Emitter Voltage

VCEX(sus)

400

Vdc

Collector-Emitter Voltage

VCEV

450

450
500

Rating

Emitter Base Voltage
Collector Current

Continuous

- Peak (1)
Base Current - Continuous
- Peak (1)
Total Power Dissipation @ T C = 25u C
@TC= 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

Vdc

8

Vdc

20
30

Adc

2.5
5

Adc

Po

175
100
1

Watts

W/oC

TJ,T stg

-65 to +200

°c

VEB
IC
ICM
IB
IBM

F -

STYLE 1
PIN 1 BASE
2 EMITTER
CASE COLLECTOR

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

Symbol

Max

Unit

R8JC

1

°C/W

TL

275

°c

Maximum Lead Temperature for Soldering
Purposes; 1/8" from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.

CASE 1-05
TO-204AA

1-495

I
I

I
I

I
I

~

MJ10000, MJ10001

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless othe"';ise noted).

I

I

Characteristic

Symbol

Min

Typ

Max

350
400

-

-

400
450
275
325

-

-

-

0.25
5
5

mAde

150

mAde

'Unit

OFF CHARACTERISTICS {21
Collector-Emitter Sustaining Voltage (Table 1)
{lc = 250 mA, IB = 0, ~ clamp = Rated VCEol

Collector-Emitter Sustaining Voltage (Table 1, Figure 12)

IC

MJ10oo0
MJ1000l
IC = 10 A, Vel emp = Rated VCEX, TC = 100°C MJ10000
MJ1000l

{VCEV

ICEV

ICER

-

leBO

-

-

= Rated Value, VREloffl = 1.5 Vdc, Tc = 1500 cI

= Rated VCEV, RBE = 50 n, TC = 1000 CI

Emitter Cutoff Current

{VEB

mAde

-

= 1.5 Vdcl

Collector Cutoff Current

IVCE

Vde

VCEX{susl

= 2 A, Velamp = Rated VCEX, TC = 100°C

Collector Cutoff Current
{Vcev = Rated Valu~, VBElo!fl

Vdc

VCEO{susl
MJ10000
MJ1000l

=8 Vde, IC =01

SECOND BREAKDOWN
See Figure 11

Second Breakdown Collector Current with base forward biased

ON CHARACTERISTICS {21
DC Current Gain

Collector-Emitter Saturation Voltage

{lC = 10 Ade, IB
{lC = 20 Ade, IB
Or. = 10 Ade, IR

VCEI.atl

= 400 mAdel
= 1 Adel
= 400 mAde, Tr. = 1000CI

Base-Emitter Saturation Voltage
IIC = 10 Ade, IB =400 mAdel

1Ir. = 10 Adc,IR = 400 mAde, Tr.
Diode Forward Voltage {II
IIF = 10 Adel

-

hFE

{lc = 5 Adc, VCE = 5 Vdel
{lc = 10 Ade Vr.~ = 5 Vdel

50
40

-

600
400

-

-

-

1.9
3
2

-

2.5
2.5

3

5

Vdc

-

VBElsatl

Vde

Vde

Vf

-

Ihfel

10

-

-

Cob

100

325

pF

Id

-

0.12
0.20
1.5
1.1

0.2
0.6
3.5
2A~

!'.
!'.
!'.
. !'.

3.5
1.5

5.5
3.7

!,s
!,s

1.0
0.7

-

!,s
us

= 1000 CI

DYNAMIC CHARACTERISTICS
Small-Signal Current Gain

1Ir.

=1.0 Ade, Vr~ = 10 Vde, fxest = 1 MHzl

Output Capacitance

{VCIl = 10 Vde,le

= 0, ftest = 100 kHzl

SWITCHING CHARACTERISTICS
RRsilti ... Lnad ITabl. I}
Delay Time
Rise Time
Storage Time

{VCC = 250 Vde, IC = 10 A,
IBI =400 mA, VBE{offl = 5 Vdc, tp = 50 !'s,
Duty Cycle .. 2%1.

Fall Time
Inductive Load Cla",,,,,dl1:able 11
Storage Time
Crossover Time
Storage Time
Crossover Time

tr
ts
t

(lC = 10 A{pkl, Vel amp = Rated VCEX, IBI
VBEloffl = 5 Vde, TC = looo CI

=400 mA,

tsv
te

IIC ~ 10 A{pkl, Velamp = Rated VCEX, IBI
VBE{offl = 6 Vdc, TC = 25 0 CI

=400 mA,

Isv
tc

-

-

(1) The internal Coliector·to·Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Tests have shown that the Forward Recovery Voltage (V f) of this diode is comparable to that of tYpical fast
recovery rectifiers.

{21 Pul.e Te.t: Pulse Width

= 300 !,S, Duty Cycle .. 2%.

1-496

MJ10000, MJ10001

II.

DC CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN
500

--

300
200
z



5

0.03

II
=

/
25

0.050.07

0.1

J

-

O. 8

r-

0.4
0.2

0.3

=

2:

-~..25°C ",,"

'"«

:>

"'

o

I-

~
~

1

-

1. 2

10

20

O. 8
0.2

1/ 13
l/-'/

...-:-:1-"::

0.3

2~~

........ V

'1'5\;c

T

10

0.5 0.7
IC, COLLECTOR CURRENT (AMP)

20

FIGURE 6 - OUTPUT CAPACITANCE
100 0

~VCr250V

TJ = 25°C

70 0
1,/

0

r-- TJ -125°C

~ 102

-:::-:::-

-

>

0.5 0.7

/,

25°C

:;1
6
o

..- -lfo°c

103

~

0.7

T~=h- i--

2

w

FIGURE 5 - COLLECTOR CUTOFF REGION

j

0.5

I

in

IC, COLLECTOR CURRENT (AMP)

104

0.3

2. 41--- '-- - - VBE(on) @ Cr ~ V
o

V

-55°C

II II

:;

VA
TJ

0.2

-VBE(sat)@~"B=25

IV

6

2

\.

\

FIGURE 4 - BASE-EMITTER VOL TAGE
2.8

I II
ICIIB

20A

\ 15A

IB, BASE CURRENT (AMP)

FIGURE 3 - COLLECTOR EMMITTER SATURATION VOLTAGES

j

TJ = 25°C

\

r--..

IC, COllECTOR CURRENT (AMP)

2.4

1\

\

;,;
~ 1.8

V E= 5~

/'

10

lOA

2. 2

t=

I

./

~ 20

IC =5A

~

-55°C

30

2.6

«

:;

"'-

I.--

I ~:

\
\
\

o

I

./

f-- r--750C

10

I

"
.......

0

0t==: t==250C

10- 1
-02

t--

0

/

10

t-.....

0

-

f - - I-l00oC

'"

Cob

0
+0.2

+0.4

to.6

+0.8

50
0.4 0.6

1

4

6

10

20

40 60

VR, REVERSE VOLTAGE (VOLTS)

VBE, BASE·EMITTER VOLTAGE (VOLTS)

1-497

100

t:
200

400

MJ10000, MJ10001

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE

VCEOlsus)

VCExtsus) AND INOUCTIVE SWITCHING

SWITCHING

01

2N2907

02 2N2222
Pulse Width
adjusted to
obtain specifiad
Ie (R_,istlv.
Switching.

03 2N3762

Puis. Width
= 50 J&I)

PW Varied to Attain

'C- 250 mA

a.
as

MJE210

01

1N914

02 lN914
03

......
-w

:>:>

u ...

!!' ..
u>

Leod = 180 iJH

Lcon-10mH vee" 10V
Reoll '"' 0.7 n
Vclamp • VCeollllu.)

MJE200

Rcoil : 0.05 n

Vcc "" 250 V
RL = 25 n
Pulse Width'" 50 PI

Vclamp = Rated VCEX Value

Vee =20V

INDUCTIVE TEST CIRCUIT

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

tf Clamped

lN914

11 Adjusted to
Obtain Ie

Ie

~

:;

u

a:

U

E
I-

SII8 Above For

DetaIled Conditions

0.1

n

Test Equipment
Scope-Tektronix

Time

. 475

or Equivalent

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

+--C Vclamp IIVO% Ie T

Ie

90% Vclamp

~

-I,.

Irv ffll-\-lfI-'" _tti_

I--irtc..), f-I'\.

,/

Vclamp

1 8 - f- 90% 181

-- --\-\ --

c - - 1---

..........

10%
Vclamp -

---

-:---

--

10%"
le-

'2%::
Ie

In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IBI to 10% Vclamp
trY = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = .Crossover Time, 10% Vciamp to 10% IC
An enlarged portion of the turn·off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.

TIME

1-498

MJ10000, MJ10001

II.

SWITCHING TIMES NOTE (continued)
For the designer. there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN'222:
PSWT = 1/2 VCCIC(tc! f
In general. trv + tfi "" t c ' However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors. resistive
switching is specified at 2!PC and has become a benchmark
for designers. However. for designers of high frequency
converter circuits. the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (t c and tsv) which are guaranteed at
1000 C.

RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN-ON TIME
2

FIGURE 9 - TURN-OFF TIME

-V~E(Olf) ~ 5 V

Vee= 250 V
1 - lellB = 25
TJ - 25 0 C

O. 7

~

,.;::"'

~

........... ~

1

O. 7~

""

.5 O. 5

,-

2

]

,."'
;::

~d

~

0.3

"-':

o. 2

~

Y

-...;:::

./

-'

10

L

O. 5V

./

0.3

O.

20

/'f

L

/'

0.2

r--

O. 1

-

V

VBF(off)' 5 V
VCC = 250 V
IcllB = 2~_--=TJ=25 0 C

~

1V

I
10

20

IC. COLLECTOR CURRENT (AMP)

lC. COLLECTOR CURRENT (AMP)

FIGURE 10 - THERMAL RESPONSE
I
)

'""'':i

5

l;;

0= 05

~~IC

O. 2

~ ~

01

~I~

~!

ffi

!
"
....

-

O. 3
0.2
01
0.0) -

~

P(,kl

~

tJUl

0.05

~ 00 5

r- 002
3

0.0
0.02f-'
0.0 1 ......
0.01

fo.ot::::

f-1
0.02

-r~~

V

I-

01

ZIJJCI.) = ,(.) ROJC

ReJC = l oCIW Max

o CURVES APl'l Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT.,

TJ(,k) - TC = P(,k) Z'JC(.)

DUTY CYCLE. D = .,/'2

SI~G\ErW~
005

~

...-:- ......

I I III
02

10

05
t,

TIME (ms)

1-499

I I
20

I I I I I I II
50

100

I I
200

I I I I II
500

10k

MJ10000, MJ10001

SAFE OPERATING AREA INFORMATION
Th. Safe Operating Arta figur•• shown in Figures 11 and 12 art
specified ratings for these devices under the test conditions shown.

FORWAFlD BIAS'
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve on
Figure 13.
TJ(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA
50
10Jl.s
20
100"~
ii: 10
:E
5 5
1m.
l-

I
"'
0

~

0

u

5m,

2
I
0.5

-

1--.

0.2~

0.1 ",.
0,05

TC = 250C
- BONOING WIRE LlMITEO
THERMALLY LIMITED .
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

I=:dc

!J

0.02
0.01
0.005
4

=

MJIOOOO
MJIOOOI; ~
6

10

20

40

100 .

60

200

350
400

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA

REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with ~he base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a given
collector current and represents a voltage·current condition that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.

20 TURN OFF LOAD LINE
BOUNDARY FOR MJIOOOI
THE LOCUS FOR MJlOOOO
ii:
:E 16 IS 50 V LESj

5

L

I-

z

~

"'
'""'

:>

1\

12

i\\.- ,\\ -

TJ

~

V

30

,/

10

I

j...-

2.SA

\ lOA

SA

2.2

ff-

-SSoC

/1-"'"

=>

'" 20

~

\

~

1. B

~

1.4

"'"
\

o

VCr
3
0.1

'-'

S, V

~

:>

0.2

0.3

O.S 0.7

10

0.6
10

20

30

SO

2,B

4

~

IC/I~",IO

."'

2S0~

-r

I II

,//

F"='=
~

TJ -12SoC

...

1.6

";li
~

~

>

I--

O,B
0,1

10

2S~
1===

1k

0,2

0,3

O,S

-

./

l/

1/
I;-

~

250C

,.,

7

/

./

I- / '

-

1.2

IS00C

II
0,7

1

10

3

IC. COLLECTOR CURRENT (AMP)

FIGURE 6 - OUTPUT CAPACITANCE
40

0",-

TJ" 2SoC

i'--

2

~ 200

100°C
1

SOO 700

... v

It

w

/v

0.3
O,S 0,7
2
IC. COLLECTOR CURRENT (AMP)

VCE"2S0V

300

.,-

TJ"-SSoc

FIGURE 5 - COLLECTOR CUT-OFF REGION
10 3

VBE(on)@VCE=5V

ff-

;;;

~
I

0.4

-

"'w

v

....--

-

>

TJ " -ss05..---

0.2

-

0

V

2

200

~ V~E(~tll@ I,C~'~ ~ 10

2,4

~

/

0.1

_

0

~
w

6

100

FIGURE 4 - BASE-EMITTER VOLTAGE

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOL TAGE

2 - l - I-

70

lB. BASE CURRENT (rnA)

IC. COLLECTOR CURRENT (AMP)

~
U

~

75°C

Cob

~ 10 0

~REVERSE

~

FORWARD

o

S

2SoC
10- 1
-0,2

+0.2

+0.4

+0.0

+0.8

VBE. BASE·EMITTER VOLTAGE (VOLTS)

80
0
40
0,1 0,2

rO,S

1

10

20

SO

100

VR. REVERSE VOLTAGE (VOLTS)

1-503

200

SOO 1000

MJ10002, MJ10003

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
~ESlSTNE

VCEO(sus)

VCEXlsusl AND INDUCTIVE SWITCHING

SWITCHING

~1

20

'"0

o ---.f""""""L

Z

1-

01

2N2907

02 2N2222

~E

Pulse Width

zo
-z

03 2N3762

adjusted to
obtain specified
Ie (ReSistive

8

Swltchmg.
Pulse Width
= 50 ,",51

PW Varied to Attain
Ie" 260mA

LcO/I = 180 j.lH

~~~': ~8~ f2

INDUCTIVE TEST CIRCUIT

MJE210
MJE.200

Dl

lN914

D2

lN914

D3

lN914

VCC=250V
AL = 50 n
Pulse Width = 50 1-'1

Vclamp = Rated VCEX Value

OUTPUT WAVEFORMS

RESISTIVE TEST CIRCUIT
t1 Adjusted to
Obtain Ie

tfClamped

'C

04

as

<'"

tf Unclamped "'" t2
t

1 '"'

LCO~~~CDk)

~"'---+-'-c->"'-

! Leol!

t2 "" Leol • (lCpk l

See Above For

Detailed Conditions

Vcl amp

VCE

Test EqUipment

Seope-Tektronlx

01<1

415 or Equivalent

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

~

Ie

I

90% V'lamp

f-- f---Isv

V'laIP--J

b r"""""' .../
I'\.
10% ........

Vclamp

-- --\- -- ----

18-

AI\.90% Ie

IIV ifll-\;'h-- 1-',,_
10%
Vclamp -

90% 181

..............

--

~

TIME

le-

~!::::
Ie

In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, curreht and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IBI to 10% Vclamp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossove"r Time, 10% Vclamp to 10% IC
An enlarged portion of the turn-off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.

1-504

MJ10002, MJ10003

SWITCHING TIME NOTES (continued)

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN·222:
PSWT = 1/2 Vcclc(td f
In general, trv + tfi "" tc. However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2!PC and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at
lOOoC.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN·OFF TIME

FIGURE 8 - TURN·ON TIME

a

1
O. 7

r-

3-

vCC" 2S0 v
'Bl - 250mA
TJ ,,25°C

IB1 -250mA

2

]
w

Ir/'

1

">=

"~_ 0.07

00 5
0.0 3

~

0.0 2
0.0 1
0.1

0.2

I-

_F

Id

O. 7
O. S
O.3

I'-

O. 2

03

O.S

07

O. 1
0.1

10

1

TJ - 2SoC

-

I-Is

.3
w

VB~~r :ls~l

7

H--

0.2

03

--

It

O.S

10

0.7

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

FIGURE 10 - THERMAL RESPONSE
1
7=0"OS
S

--

3 = 02
2

-

f-

01

f---- f-~

I=OOS

ROJC(I)" r(l) ROJC
ROJC(t) == 1 17 °C/W MdX

..-

o CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN

READ TIME At tl
TJ(pk) TC" P(pk) RoJC(11

pmsl

7~:=p02
S

-

.-k'" 001

-t., ~-J

002 f - - SINGLE PULSE
0.0 1
001

-12

I II

a 02 a 03

~UTY

005

01

0.2

03

10

O.S
t, TIME (ms)

1-505

20

30

so

100

CYCLE, 0 ".,/12
200

300

sao

1000

MJ10002, MJ10003

OJ

The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions shown.

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: junction temperature and second breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation, I.e., the transistor must not be subjected to
greater diSSipation than the curves indicate.
The data of Figure 11 is based on TC ~ 250 C, TJ(pk)
IS vanable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;, 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by uSing the appropriate curve on
Figure 13.
TJ(pk) may be calculated from the data," Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to valups less than the
limitations imposed by second breakdown.

FIGURE 11 - ACTIVE-REGION SAFE OPERATING AREA
0

.

~
5

100",-

'"

0

~

8
E

TC-25 0 C

2
1

o. 5

1 ms

5
m,

5

t-

ia

10"

0

r----

de ,"

- -

BONDING WIRE LIMIT
THERMAL LIMIT
ISINGLE PULSEI
---SECOND BREAKDOWN LIMIT

'\.

2

"

.1
0.0 5

MJ10002 ~
MJ10003

==

0.02

1/

10
20
40
60
100
200
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI
350
400

FIGURE 12 - REVERSE BIASED SWITCHING
SAFE OPERATING AREA

,

0

TURN OFF LOAD LINE
BOUNDARY FOR MJ10003
THE LOCUS FOR MJ10002
B IS 50 V LESS
I
I

REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping. RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX (sus) at a given
collector current and represents a voltage-current condition that can be sustained during reverse biased turn'off,
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.

l\

6

I\\.-+-- VBEloff)

TJ';; 1000C

\~ +-- VBEloff!

4

Ib _VBEloff)
\

2

\

0
100

200

300

,"" 1""-.
""
400

~ 5V

~ 2V
~

OV

500

VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI

FIGURE 13 - POWER DERATING
100

~ 80

g;
t:;

~ 60
z

'"i=
~

~ :-....

............

""" '"

"

THERMA\".OEPATING

........,

SECO~~~~i~~OOWN _

............

"-

40

................

'"

~_

"

20

o
o

["'-..

"'- ......

40

120
80
TC, CASE TEMPERATURE lOCI

1-506

160

~

~

200

®

MJI0004
MJI0005

MOTOROLA

ID

Designers Data Sheet
20 AMPERE

NPN SILICON

SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE

POWER DARLINGTON
TRANSISTORS

The MJ10004 and MJ10005 darlington transistors are designed
for high·voltage, high·speed, power switching in inductive circuits
where fall time IS critical. They are particularly suited for line oper·
ated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn·Off Times
40 ns Inductive Fall Time - 25 0 C (Typi
650 ns Inductive Storage Time - 25 0 C (Typi

350 and 400 VOL TS
175 WATTS

Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per·
mlts the design 'of most cirCUits
entirely from the information pre-

sented. Limit data - .representing
device, characteristics boundaries are given to facilitate "worst case"

Operating Temperature Range -65 to +200 0 C
lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

design.

F

~

-,

MAXIMUM RATINGS
Symbol

MJ10004

MJ10005

Unit

Collector-Emitter Voltage

VCEOlsusl

350

400

Vdc

Collector-Emitter Voltage
Collector-Emitter Voltage

VCEXlsusl

400
450

450
500

Vdc

Rating

VCEV

Vdc

Emitter Base Voltage

VEB

8.0

Vdc

Collector Current - Continuous
-Peak 111

IC
ICM

20
30

Adc

Base Current - Continuous
-Peak 111

IB
IBM

2.5
5.0

Adc

Total Power Dissipation@Tc - 2S o C

Po

175
100
1.0

Watts

-65 to +200

°c

@TC= 1000C

Derate above 2SoC
Operating and Storage Junction

TJ,T stg

W/oC

Temperature Range

STYLE 1
PIN 1 BASE
2. EMITIER
CASE COllECTOR
NOTES
1. DIMENSIONS QAND VARE DATUMS.
2.
ISSEATING PLANE AND DATUM
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q.

m

It

1113(0005l@ IT Iv@1

FOR LEADS

It 11.13(o.o'''@Tlv@1 G@I
4 DIMENSIONS ANO TOLERANCES PER
ANSIY145,1913

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering
Purposes· 1/8" from Case for 5 Seconds

Symbol

Ma.

Unit

R8JC

1.0

°C/W

TL

275

°c

(1) Pulse Test: Pulse Width.; 5.0 ms, Duty Cvcle" 10%.

CASE 1-05
TO-204AA

1-507

MJ10004, MJ10005

III

ELECTRICAL CHARACTERISTICS ITC - 25°C unless.otherwlSe noted)

I

Characteristic

Symbol

Min

Typ

Max

350
400

-

-

400
450
275
325

-

-

-

Unit

OFF CHARACTERISTICS
COllector-Emitter Sustaining Voltage !Table 1)

MJ 10004
MJ 10005

Collector-Emitter Sustaining Voltage (Table 1. Figure 12)

(lC

= 2.0 A. Vel amp = Rated VCEX. TC = 1000 C)

(lC

= 10 A. Vclamp = Rated VCEX. TC = 100°C)

MJ 10004
MJ10005
MJ 10004
MJ10005

IC

-

mAde

-

ICER

0.25
5.0
5.0

mAde

175

mAde

= 50 n. TC = 100°C)

Emitter Cutoff Current

= 2.0 Vde.

Vde

ICEV

(VCEV " Rated Value. VBE(off) " 1.5 Vde)
(VCEV "Rated Value. VBEloff)" 1.5 Vdc. TC" 150°C)

IVEB

-

VCEX(sus)

Collector Cutoff Current

Collector Cutoff Current
IVCE " Rated VCEV. RBE

Vde

VCEO(sus)

I1C " 250 mAo IB "0. Vclamp " Rated VCEO)

-

lEBO

= 0)

SECOND BREAKDOWN
See Figure 11

Second Breakdown Collector Current with base forward biased

ON CHARACTERISTICS (2)
DC Current Gain
I1C = 5.0 Ade. VCE = 5.0 IIde)
I1c = 10 Ade. VCE = 5.0 Vde)
COllector-Emitter Saturation Voltage

I1C " 10 Ade. IB "400 mAde)
IIc = 20 Ade. 18 = 2.0 Ade)
I1c" 10 Adc. IB = 400 mAde. TC

VCElsatl

= 10 Ade.
= 10 Adc.

18
18

50
40

-

-

-

-

600
400
Vde

-

-

-

1.9
3.0
2.0

-

-

-

2.5
2.5

Vf

-

3.0

5.0

Ihfe l

10

-

-

Cob

100

td

-

-

= 100°C)

Base-Emitter Saturation Voltage

IIc
IIc

-

hFE

Vde

V8EIsatl

= 400 mAdcJ
= 400 mAde. TC = 100°C)

Diode Forward Voltage II)
I1F = 10 Ade)

Vdc

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain
IIc = 1.0 Ade. VCE = 10 Vde. f test

= 1.0 MHz)

Output Capacitance
(VCB = 10 Vde. IE = O. f test

325

pF

0.12

0.2

I'S

0.2

0.6

I'S

0.6
0.15

1.5
0.5

I'S

1.0

2.5
1.5

lAS

= 100 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time

Rise Time
Storage Time

(VCC = 250 Vde. IC = 10 A.
IBI = 400 mAo VBE(off) = 5.0 Vde, tp
Duty Cycle"; 2%),

= 50 !lS,

Fall Time

tr
ts

-

tf

-

I sv

-

I'S

Inducti ... Load, Clamped (Table 1)
Storage Time
Crossover Time·
Storage Time
Crossover Time

(lC = 10 A(pk). Vel amp = Rated VCEX, IBI
0 C)
VBE(ott) = 5.0 Vde, TC =

= 400 rnA,

(lC = 10 A(pkl, Vel amp = Rated VCEX, lSI
VBE(off) = 5.0 Vde, TC = 250 C)

= 400 rnA,

loo

0.4

Ie
tsv
Ie

-

-

lAS

0.2

-

I'S

(1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Tests have shown that the Forward Recovery VolJage (Vfl of this diode is comparable to that of typical fast
recovery rectifiers.
(2) Pulse Test: PW = 300 I'S, Duty Cycle"; 2%.

1-508

lAS

0.65

MJ10004. MJ10005

III

TYPICAL CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN
500

TJ

200

;;:

:...-

:: 100

I

o

10
7
5

V~E ~ 5\

./
02

8

r--

I

/'

10

20

1
002

005007

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

I II

1Jl

/

lell B·lO

J

/1/

-

B

04
02

I-

V

-55°C

~I25°C I---

02

II II

4f---

03

05 07

10

20

0,8
0.1

V

V

~

TJ 1• -Jsoc

-+- I -

~ ~';;C

--

-I

'/

>-- ~
0,3

I

0,5 0,7

10

20

IC, COLLECTOR CURRENT (AMP'

IC, COLLECTOR CURRENT lAMP)

FIGURE 6 - OUTPUT CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION
1000
=VCE ~ 250)V

~

~

/

~f-'::

25°C

6

1, 2

I

VBE(sat) @leliB ~ 10
--- VBE(Dn) @VC,E • ~ v

-

I- K500C

05 OJ

03

!\

01

2

V",1
~

1\ 20A

FIGURE 4 - BASE-EMITTER VOL TAGE
8

TJ

25 uC

'8, 8ASE CURRENT lAMP)

'C, COLLECTOR CURRENT lAMP)

24

~

i'..

\
003

TJ

\ 15A

\
\
\

\

4

05 07

03

\

lOA

Ie:: SA

-SSoC

~ 20

II

\

\

2

10

30

\

6

'\.

b---

~ 50
u

ISOoC

25°C

z

~

~

...,., ...-

300

FIGURE 2 - COLLECTOR SATURATION REGION
3

TJ' 25°C

70 0

/

10 3

0

0-

a~ 102 -

-100DC

-

-75 De

_TJ~

'"

~

10

1

,/

125°C

/

...-

.......

0

I

0

"

I

o

u

!J

~REVERSE

100

FORWARD /

,
Cob

f===t=25 DC

10- 1
-02

......

0
0

=

S0
+02

+04

+06

-08

VBE, BASE EMITTER VOLTAGE IVOLTS)

1-509

04 0,6

1

4

6

10

10

40 60

VR, REVERSE VOLTAGE IVOLTS)

100

200

400

MJ10004, MJ10005

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

VCEOlsus)

RESISTIVE
ITCHING

VCEX(susl AND INDUCTIVE SWITCHING

Pulse :/1V

0' 2N2907
02 2N2222

Width

...

Pulse Width
adjusted to

03 2N3762

obtai" specified

Ie

(Resistive

PW Vaned to Attain
Ie" 250 rnA

MJE210

05 MJE200

SWltchmg,
PulseW.dth
= 50 J.!s)

0' lN914
02 lN914
03 lN914

Leoil- 10mH vee =< 10 V
Reon'" 0.1 n
Vclamp" VCEOfsus)

Leoll = 180 J.lH

Reoll = 005 S1
Vee = 20V

INDUCTIVE TEST'CIRCUIT

Vclamp " Rated

Vee = 250 V
AL" 25 n

veE X Value

PulseWtdth = 50,""

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

Ie

'"S
l-

t 1 Adjusted to

t, Clamped

Obtain

Ie

u

a:
U

5
I-

I Leal!

t2

See Above For

Detailed Conditions

61#

Lcoll (ICpk'
VClamp

Test Equipment
Scope Tektronix

D,n

475 or Equivalent

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

r-:

Ie

90% Vcl.mp'l~!90% Ie

I- f - - I . , - ~r-I .. ffjloo\-It, -

Vcl. mp -

I

_1,,_

r---; r--Ic~ I -

l/

Vc:tamp

10%
Vclamp -

' 8 - I- 90% 181

-- --\-\ -- --- -..............

.-

---

TIME

"-

10%""-l e - r-;;~
Ie

In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
SWitching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% 181 to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover-Time, 10% Vclamp to 10% IC
An enlarged portion of the turn-off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.

1-510

MJ10004. MJ10005

III

TYPICAL CHARACTERISTICS
SWITCHING TIME NOTES (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-222:
PSWT; 1/2 Vcclc(tcl f
In general, trv + tfi ,., t c - However, at lower
test currents this relationship may not be valid_
As is common with most switching transistors, resistive
switching is specified at 2!PC and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (t c and t sv ) which are guaranteed at
lOOoC.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN-ON TIME

FIGURE 9 - TURN'()FF TIME

3

1

VSE(offJ ° 5 V
Vce ° 250 v
.7
IC/IS ° 25
O. 5
TJ ° 25 0 C

2

If-----

VCco250V
Icils ° 25
TJ ° 25 0 C

7
~

~ 05
w

'"-"

;=

~
~Id

""'~

o. 3

'" ~

O. 2

/
l"":::

}'

/

If

0.0 7
10

20
IC. COLLECTOR CURRENT (AMPJ

FIGURE 10 - THERMAL RESPONSE
I

0- 05

3

2

/

0.0 5

10

7

V

../

IC, COLLECTOR CURRENT (AMPJ

5

.L

lL

.1

1--

1

./

o. 2

V

Y

Is

V

o. 3

w

!

....-:1'"

02
01

1-511

20

MJ10004, MJ1 0005

SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions shown.

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are val,d for duty cycles to 10% but must be
derated when TC ;;;, 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve on
Figure 13,
TJ(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
the DOwer that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA

50

10,1.15

100,l.l~

20

~ 10
<$

5

1m,

l-

ia
a:

5m,

2
1
0.5

o

c-

o

0.1~

'" 0 05
~

MJ10004 F~
MJ10005 ~!;!'

002
0.01
0.005

4

10

20

40

60

100

200

350

VCE, COLLECTOR·EMITTER VOLTAGE (VOL TSI

I~

r

400

FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA

REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current,
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a given
collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.

20 TURN OFF LOAO LINE
BOUNDARY FOR MJ10,005t--t--t-+--+--+-+--i
ii:
THE LOCUS FOR MJ1O,OO4
~ 16 IS 50 V LESS I
I
t--t--ti-f-----jf-----j----i--i

15

~ 12~-t--~-~~~~-~~~-4--+--+-_4
i:l

t-_-t-_T-tJ_"_'_00;O_C_+_+_-+I\\-\,\-."'f-=VBEIOffl

= 5V

~ B.O t---t---t--+-+-+-~I\"",\k-'i<~r-- VBElolf)

= 0V

~

8

~~-VBE(Off)"

2V

t--+--+--+-+-+-~\~,~~-i----i

~ 4.0 I---+---t----+-)--+---t---\-\~~~I',...--+---t

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 13 - POWER DERATING
100

~~

""1"'-r'---

0

.........

THERMA~
DERATING

B~EAKD~WN_

SEdoNO
DERATING

.........

r'---

"-

r-...

r--.....

"-

I'---

.........

0

o
o

.........

"40

80
120
Tc. CASE TEMPERATURE (OCI

1-512

160

............
200

®

IJI0006
IJI08,07

MOTOROLA

Designpl's Data

~heet

10 AMPERE

SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
The MJ10006 and MJ10007 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn-Off Times
30 ns Inductive Fall Time - 25 0 C (Typ)
500 ns Inductive Storage Time - 25 0 C (Typ) )
Operating Temperature Range -65 to +2000 C
lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 AND 400 VOLTS
150 WATTS

Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the deSign of most circuits
entirely from the information pre·
sented. Limit data - representing
device characterIStics boundaries are given to facilitate "worst case"
deSign.

MAXIMUM RATINGS
Symbol

Rating

Collector-Emitter Voltage
Collector· Emitter Voltage
Collector-Emitter Voltage

Emitter Base Voltage
Collector Current

Continuous

- Peak (11
Base Current

Continuous
- Peak (1)

Total Power Dissipation

@

MJ10006
MJ10007
350
400
400
450
450
500
8.0
10

VCEOlsus)
VCEX(sus)
VCEV
VEB
'C
leM
'6

@TC = 100°C
Derate above 25 DC

Operating and Storage Junction

TJ,Tstg

STYlE 1
PIN 1 BASE
2.

EMITTER

CASE COLLECTOR

20

2.5
5,0
150
100
0,86
-65 to +200

'BM
Po

T C = 25°C

Unit

Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/oC

°c

Temperature Range

NOTES
1. DIMENSIONS a AND v ARE DATUMS
2. [JJ IS SEATING PLANE AND DATUM.

l POSITIONAL TOLERANCE FOR
MOUNTING HOLE O.

1t 111310.'05,01 T Iv0 I
FOR LEADS.
I t 11.131O.oo5l0 T Iv0 10 01
4 DIMENSIONS AND TOLERANCES PER
ANSIV14.5,1973

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering
Purposes' 1/8" from Case for 5 Seconds
(1)

Pulse Test: Pulse Width

Symbol

Max

Unit

R8JC
TL

1.17

°CIW

275

°c

= 5,0 ms, Duty Cycle .. 10%.

CASE 1-05
TO·204AA

1-513

l1li

MJ10006, MJ10007

IIJ

ELECTRICAL CHARACTERISTICS ITe

I

~ 25 0 e unl ... otherwISe notedl.

I

Characteristic

Symbol

I'

I'

"'ix:'

Min

Typ

350
400

-

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)

= 250 mA,

lie

IS

= 0, Vcl amp = Rated

VeEol

Vdc

VeEOIsu,1
MJ10006
MJ10007

Collector-Emitter Sustainll'lg Voltage (Table 1. Figure 12)

Vde

VeEX(susl

(lC

= 1 A, Vcl amp = Rated VCEX' TC = 100°C)

MJ10006
MJ10007

400

-

-

4~0

-

(lC

=5 A, Vclamp = Rated VCEX, TC = 100°C)

MJ10006
. MJ1DOO7

275
325

-

-

-

0.25
5.0
5.0

mAde

175

mAde

Collector Cutoff Current

IVCEV
IVCEV

ICEV

= Rated

VCEV, RSE

-

IESO

-

-

=50 n, Te = 1000CI

Emitter Cutoff Current

(VES

ICER

-

Collector Cutoff Current

IVCE

mAde

-

= Rated Value, VSEloffl = 1.5 Vdcl
= Rated Value, VSEloffi = 1.5 Vdc, TC = 1500 CI

-

= 2 Vdc, IC = 0)

SECOND SREAKDOWN
See Figure 11

Second Breakdown Collector Current with base forward biased

ON CHARACTERISTICS (2)

= 2.5 Adc, VCE = 5.0 Vde)
= 5.0 Adc, VCE = 5.0 Vde)

(lC
(lC

Collector-Emitter Saturation Voltage

(lC
(lC
(lC

VCElsat)

= 5.0 Ade, IS = 250 mAde)
= 10 Ade, IS = 1.0 Ade)

= 5.0 Ade,

IS = 250 mAde, TC

= 5.0 Adc,

IS ~ 250 mAde, TC

-

500
300

-

-

1.9
2.9
2.0

-

2.5
2.5

Vde

-

Vde

VeEI,at)

Vf

-

3.0

5

Ihle l

10

-

-

-

Cob

60

-

275

pF

td

-

0.05
0.25

0.2

"s

0.5

1.5
0.5

-

O.S
0.6

2.0
1.5

"s

0,5
0.3

-

"s
"s

= 100°C)

Diode Forward Voltage (1)

(IF

40
30

-

= 100°C)

Base-Emitter Saturation Voltage
(lC = 5.0 Ade, Ie = 250 mAde)

(lc

-

hFE

DC Current Gain

= 5.0 Adc)

Vde

DYNAMIC CHARACTERISTICS
Smail-Signal Current Gain

(lC

= 1.0 Ade, VCE = 10 Vde, f test = 1.0 MHz)

Output Capacitance
(Vce = 10 Vdc,IE

=0, f test = 100 kHz)

SWITCHING CHARACTERISTICS
ReSistive Load nable 11

Delay Time.
Rise Time

Storage Time

(V CC = 250 Vde, IC = 5.0 A,
ISl = 250 mA, VeE(off) = 5.0 Vde, tp = 50 "s"
Duty Cycle .. 2.0%1.

Fall Time

tr
t,
tf

0.06

0.6

"s

",
"s

Inductive Load, Clamped (Table 11
Storage Time
Crossover Time

Storage Time

Crossover Time

(lC = 5.0 A(pk), Vel amp = Rated VCEX, IS1 = 250 mA,
VSE(off) = 5.0 Vde, TC = 100OC)

tsv

(lC = 5.0 A(pk), Vel amp = Rated VCEX,lel = 250 mA,
VSE(off) = 5.0 Vde, T C = 25°C)

tsv
te

te

-

(1)

The internal CDllector-to-Em'tter diode can eliminate the need for an e)(ternal diode to clamp inductive loads.
Tests have shown that the Forward Recovery Voltage (V,) of this diode is comparable to that of typieal
fnt recovery rectifiers.

(2)

Puis. Tost: pw. 300 "s, Duty Cycle .. 2%.

1-514

-

"s

MJ10006, MJ10007

TYPICAL CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN

300

FIGURE 2 - COLLECTOR SATURATION REGION

~ 3.4

TJ'ISOoC

200

~

0

2S~C

'"~
o
>

I..'"

!::

-SSOC

VCE' S V
0.3

IC·0.3A-

2.SA

I'

1.4

8

1

tl

10

O.S 0.7

\
"-

o. 6
10

20

30

50

70 100
200 300
lB. BASE CURRENT (mA)

IC. COLLECTOR CURRENT (AMP)

FIGURE 3 - COLLECTOR·EMITTER SATURATION VOLTAGE
~

~

~

-

a

I-

~

IC/I~' io

o

~

V

i~1.6
~w
0:,"

TJ' -S50C

oC

~

~ ~1. 2
j:>

250

n

o

U

i

w

u
:>

V

o. 8

t

~

V

III

~

11

2SoC

~

-

Il.,1-/

~ 1.2

I---

I-- r0.8
0.2

0.1

FIGURE 5 - COLLECTOR CUTOFF REGION

0.3

v.:

L

2~ ~

1. 6

10

~

i.--"

~ i-"""

Tp -SS'C

W

~

V

L'

lS00C

II

10

0.5 0.7
IC. COLLECTOR CURRENT (AMP)

FIGURE 6 - OUTPUT CAPACITANCE
400

~~VCp250

,u· =

1k

V~E(~tll@lIIC\I~ ~

10
VSE(,n}@VCE'SV

0:

>

O.S 0.7
0.3
IC. COLLECTOR CURRENT (AMP)

0.2

-

:>

L' V-

.1

0.1

-

o

~

0.4

-

w

IL

.,Vv

f- ~

2.4

'"~

0:0;

wOO-""

SOD 700

FIGURE 4 - BASE·EMITTER VOL TAGE

2.B

2.4

0:

\ IDA

SA

1. B

~

>
0.2

2. 6

o

I

j...-

7
S
3
0.1

I

ffi 2.2

....... V

0/

TJ·250C

~
w

0
0

°v
0

I

c

........

'""!--

TJ'2S'C

i=TJ'

"'-

~ 200

z

~

U

~

101

100

~ ~~

10·1
-0.2

+1.2

+0.4

100

::0

80

j

60

~

FORi (ARI

c

+0.6

Cob

0-

+0.8

VBE. BASE·EMITTER VOLTAGE (VOLTS)

l"-

40

0.1 0.2

0.5

1

10

20

SO

t----

100 200

VR. REVERSE VOLTAGE (VOLTS)

1-515

SOO 1000

MJ10006, MJ10007

III

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
VCEX(IUII AND INDUCTIVE SWITCHING

SWITCH_

~,

,J
:>;:

..!!~8

20
0' 2N2907
Q2 2N2222

0..JL
Pull. Width
adjusted to

~_2

03 2N3762
04 MJE210

obte.n spec,hael
Ie (R.,stlve
Switch'"9.

OS MJE200
0'
02

PulHWldth

PW Vened to Ana,n
Ie" 250mA

'" 50

",s)

lN914
lN914

03 lN914

.....
-:>:>..
u ...

!!: ..
u>

Leoll- 10mH

Vee"

LeOlJ'" 180 ",H
AeOiI '" 0 05 n
Vee = 20, V
fa It 500 kHz

lOV

Aeoil-O.70
Velemp" VCEOI,us)

INDUCTIVE rEST CIRCUIT.

Vee'" 250 V

Vclamp '" Rated VCEX Value

RL = 50 n
Pulse Width

0:

50101'

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

q Adjusted to
Obtain Ie

tf Clamped

;!!

<"

5
~

u

5
~

t', '" LCO~~~CPk")

~~-f-L-;---'--

See Above For
Oet8,led Conditions

Test Equipment
Scope-T ek tron ix

o,ll

475 or Equipment

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
,--

Ie

V,"mp-

-I
1-_1,. fI~lfo- 1-',,---

90% v cl.mp 11\.90% Ie

..... -1.. -

!-J -1,--\ :--

'\.

:/

Vcllmp

' 10% ......
Vclamp~ l e 10%

-----\-\ -- --- -""""

'B-

'tf Unc!amped ... '2

90% 'Bl

."...

--

TIME

--

'2%=
Ie

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are ,common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in.phase. Therefore, separate measurements
must be made on each waveform to determine the total
sWitching time, For this reason, the following new terms
have been defIned.
tsv = Voltage Storage Time, 90% IB1 to 10% Vel amp
trv = Voltage Rise Time, 10-90% Vel amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
te = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the turn·off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.

1-516

MJ10006, MJ10007

SWITCHING TIME NOTES (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN·222:
PSWT = 1/2 VCCICltcl f
In general, trv + tfi "" tc' However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2SOC and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
sWItching speeds (t c and tsv) which are guaranteed at
IOOoC.
RESISTIVE SWITCHING PERFORMANCE

FIGURE 8 - TURN·ON TIME
1
O. 1
0.5

FIGURE 9 - TURN·OFF TIME
5

~ rI-

0.3 t---

3

VCC = 250 V
IBI = 250 mA
TJ=250C

2

O. 2

~.

......

1,1/

o. 1

]

T"

"' O. 5

~. O. 3

0.0 3
0.02
0.0 1
0.1

-

I---'P

0.2

0.3

0.5

0.1

r

tf

1"'-...

D.2

'"

c-.
J".,

O. 1

1

5V
250 V
250 mA
25°C

D. 1

"

0.0 1
0.05

I--

vBEloll) =
VCC =
IBI =
TJ =

ts

1

j
~

b

D.O 1
DO 5
D.l

10

0.2

0.3

0.5 0.1

10

IC, COLLECTOR CURRENT lAMP)

lC, COLLECTOR CURRENT lAMP)

FIGURE 10 - THERMAL RESPONSE
1

:«

~_
",0

%"'

o. I~O=05
o.5

~~
........

O. 3~ 0.2

ZO

f--

~i o. 2
«Z

--""

0.1

~: o. 11==0.05
~ ~ 0.0 1~0.02

g~o.o5
~~

-

:t ~ 0.03
'2 0.02 r-0.0 I
0.01

R,JClt) - ,It) ROJC
ROJCIt) = I 17 0C/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At tl
TJlpk) - TC =PlpkJ IIoJCltJ

-

~

.....

PEJlJL

.k'" 0.01

t~-l

SINGLE PULSE

I II
0.02 0.03

DUTY CYCLE, 0 = tl/t2
0.05

01

02

0.3

10

0.5
I,

TIME (ms)

1-517

20

30

50

100

200

3DO

500

1000

MJ 10006, MJ 10007

OJ

SAFE OPERATING AREA INFORMATION

The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions shown ..

FORWARD BIAS
There are two limitations on the power handling ability
of a tranSIStor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the tranSIStor that must be observed for reliable
operation, I.e., the tranSIStor must not be subjected to
greater dISSipation than the curves Indicate .
The data of Figure 11 IS based on TC = 250 C; TJ(pk),
IS variable depending on power level. Second breakdown)
pulse limits are valid for duty cycles to 10% but must b,,(
derated when TC ;;. 250 C. Second breakdown Ilmltatlon~
do not derate the same as thermal limitations, Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by uSing the appropriate curve on
Figure 13.
T J(pk) may be calculated from the data In Figure 10.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
"mltatlons Imposed by second breakdown.

FIGURE 11 - FORWARO BIAS SAFE OPERATING AREA
20
-

100",-

10.

10

~
...

TC'250C

~

2.0

~

1.0 E -

g'". .

- E- -

0.5

1.0

5.0
ms

5.0

r---

-

InS

I'\.

de

BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECONO BREAKDOWN LIMIT

'\.

O. 2

......

8 1
EO.
0.05

I'\.

=~~~~~~~

0.02

4.0

6.0

I

10
20
40
60
100
200'
VCE, COLLECTOR·EMITTER.VOLTAGE (VOLTS)
350 400

FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA

10
ii:

...'~"

1

~
a

,

TURN OFF LOAD LINE
BOUNDARY FOR MJIOOOJ
THE LOCUS FOR MJIOO06
IS 50 V LESS

I

\\- VBE(.11I • 5 V
• 2V
l\\ r- - VBE(.ff)
VBE(.11I • 0 V

TJ" 100'C

...'"
0

;

\\
\

8
i!

\

o
o

REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction rever.e biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accompl ished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a given
collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics.

,,,-

"- ~

300
400
200
100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

500

FIGURE 13 - POWER DERATING
100

~~

"'-..., "-

~ 80

...........

'"ot;

THERMA~

~ 60

DERATING

'"z>=
~
o

.......

SECO~~:~~~N~DOWN _

t---....

I'----

i'..

~

.............

r-..... ....,

40

'"~

lr

.......

"

0

o

o

40

120
80
TC. CASE TEMPERATURE ('CI

1-518

160

""

"r-.....
200

®

MJI0008
MJI0009

MOTOROLA

l1li

Designer's Data Sheet

20 AMPERE

I

NPN SILICON
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE

POWER DARLINGTON
TRANSISTORS
460 and 500 VO L TS
175 WATTS

The MJ1000a and MJ10009'Oarlington transistors are designed
for high·voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line oper·
ated switch mode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn·Off Times
"'100
1.6!1s (max) Inductive Crossover Time -10 A, 1000 C
3.5 J%S (max) Inductive Storage Time - lOA, 1000 C
Operating Temperature Range -65 to +200 0 C
1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

Designer's Data for

"Worst Case" Conditions
The Designer's Data Sheet permits the design
of most circuits entirely from the information
presented. Umit curves - representing boundaries on deVice characteristics - are given to
facilitate "worst case" design.

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous

Symbol

MJ10008

MJ10009

VCEO(sus)

450

500

VCEX(sus)

450

VCEV

650

500
700

- Peak (1)

Base Current

Continuous
-Peak (1)

Total Power Dissipation

@ TC - 25°C
@TC= 100°C

Derate above 25°C
Operating and Storage Junction
Temperature Range

Unit
Vdc
Vdc
Vdc

8

Vdc

20
30

Adc

2.5
5

Adc

Po

175
100

Watts

1

W/oC

TJ,T stll

-65 to +200

°c

VES
IC
ICM
IS
IBM

STYlE 1
PIN 1. BASE
2. EMITIER
CASE COLLECTOR

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering

Symbol

Max

Unit

R8JC

1

°C/W

TL

275

°c

Purposes: l/S" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.

CASE 1-05
TO-204AA

1-519

MJ10008. MJ10009

ELECTRICAL CHARACTERISTICS 1TC = 25°C unless otherwise noted!.

I

I

Characteristic

Symbol

Min

Typ

Max

450
500

-

-

450
500
325
375

-

-

-

-

0.25
5

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)

(lC

= 100 rnA,

IS = 0, Velamp

MJlooOB
MJ 10009

COllector-Emitter Sustaining Voltage (Table 1, Figure 12)

(Ie = 2 A, Velamp = Rated VeEX, Te = 100°C,
VBEloff) = 5 V)
(Ie = 10 A, Vel amp = Rated VeEX, Te = 100°C,
VBEloff) = 5 V)

MJl000S
MJloo09
MJ1000S
MJloo09

= Rated Value, VBEloff) = 1.5 Vde}
= Rated Value, VBEloifl = 1.5 Vde, Te = 150°C}

mAde

leER

-

IESO

-

,0

mAde

175

mAde

= Rated VCEV. RSE = 50 n, Te = 100°C}

Emitter Cutoft Current

IVES

Vde

leEV

Collector Cutoff Current

1VeE

-

VeEXlsus}

Collector Cutoff Current

IVCEV
1VeEV

Vde

VCEOlsus}

= Rated VCEO)

=2 Vde, Ie = 0)

SECOND BREAKDOWN
See Figure 11

Second Breakd'own Collector Current with base forward biased

ON CHARACTERISTICS (2)
DC Current Gam
(lC = 5 Ade, VCE

lie

-

hFE

= 5 Vde)
= 10 Ade, VeE = 5 Vde)

Collector·Em'itter Saturation Voltage

40
30

-

400
300

-

-

-

-

2
3.5
2.5

-

-

-

2.5
2.5

VI

-

3

5

I hie I

S

-

-

-

Cob

100

325

pF

'd

-

0.12

0.25

-

0.5
O.B
0.2

1.5
2.0
0.6

1.5
0.36,

3.5
1.6

O.S
0.18

-

Vde

VCElsat)

(Ie = 10 Ade,IS = 500 mAde)
lie = 20 Ade, IB = 2 Ade)
lie = 10 Ade.IS = 500 mAde, TC = 100°C)
Base-Emitter Saturation Voltage

VSElsatl

lie = 10 Ade, IB = 500 mAde}
(Ie = 10 Ade,IS = 500 mAde, Te = 100°C)
Diode Forward Voltage (1)

IIF = 10 Ade}

Vde

Vde

DYNAMIC CHARACTERISTICS
Small·Signal Current Gain

(Ie

= 1 Ade, VeE = 10 Vdc, f test = 1 MHz)

Output Capacitance

IVCS = 10 Vde,IE = 0, 'test = 100 kHzl
SWITCHING CHARACTERISTICS
ReSistive Load {Table 1}

Delay Time

Rise Time
Storage Time

IVCC = 250 Vde, IC = 10 A,
lSI = 500 rnA, VBEloff) ~ 5 Vde, tp
Duty Cycle'; 2%1.

=

25 /oIS

tr
ts
tl

Fall Time

Inductive Load. Clamped ITable 1)
Storage Time
Crossover Time
Storage Time
Crossover Time

IIC = 10 Alpk). Velamp = 250 V, IBI
VSEloff) = 5 Vde, Te = 100°C)

=500 rnA,

IIC = 10 Alpkl, Vel amp
VSEloff) = 5 Vde)

= 500 rnA,

~

250 V, 'Bl

tsv
te
tsv
te

-

(1) The internal Collec~or-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads.

Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast
recovery reetifittrs.

(2) Puis. Test: PW

= 300 "s, DutY Cycle'; 2%.

1-520

,..
"s
/oIS

"s

.

,

"s
"S

"s

MJ10008, MJ10009

III

TYPICAL CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

400

~

"2:w

TJ~OC

z

~

200

....

I

3

/~

2.6

'"

'"

2SJC

II I
II I

~

"~

100

2.2

60

g"

\

/'

~

VCE' S V

O.S

24

~2:.

1
5
IC. COLLECTOR CURRENT lAMP)

_

'\

10

1.4

~

-I-

1
0.03

>

20

j,

II

-

'/

03

II II

-+--

'"

'"

21°C

20

O.B

0.2

05

0.3

~VCE ~ 210 lV
1,/

~

t-.....

0

f= 100°C
I

I - - f-71oC

0

r-..
I........

~

~ 10

20

10

TJ '" 25°C

0>

'-'

3

0

10 2f==
10 1

2

-~

70 0

./

/

f-- TJ - moc

0>

<.>
w

1

,/

100 0

10 3

~

0.7

-I

FIGURE 6 - OUTPUT CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION

w

'/

..-.--=

Ie. COLLECTOR CURRENT (AMP)

IC. COLLECTOR CURRENT (AMPI

104

~

--

~ 1~;;;

1. 2

10

VV W

~:~I~a~1 ~ (F~~B:1~
-I I
TJ 1• -JIOC

">>-

OS 07

I

=

::; 1.6

e- 25°C ",V
e- -Isooc

r--

04
02

0.2
0.1
lB. BASE CURRENT lAMP)

2

/,A

8

B
4f-- f -

')

IC/IB'10

_...:.:-t::~

0.1

0.05

FIGURE 4 - BASE-EMITTER VOLTAGE

I II
I II

16

TJ' 2Soc

.........

8

2.

TJ" -55°C

...

1\..
\

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

~

\

~ 1.8

20
0.2

~

\'20A

\
\

;0

40

'-'

\ '10A

~

<.>

;"

....3'z"

1\

Ie' S A

~REVERSE

FORWARD I

0
Cob

of===!==25 0 C

10- 1
-02

0

-+02

+04

+06

+08

I0
04 0.6

1

4

6

10

20

40 60

VR. REVERSE VOLTAGE (VOLTSI

VBE. BASUMITTER VOLTAGE (VOLTSI

1-521

100

!=
200

400

MJ10008. MJ10009

IIJ

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

VCEO(sus)

RESISTIVE
SWITCHING

VCEX(susl AND INDUCTIVE SWITCHING

TUAN·ON TIME

DRIVER SCHEMATIC

~1

20

co

For.nducllveloadspulsewrdth
IS adjusted 10 obtam speclhed Ie

oJL

Z

.. S?

,

~~
ZO

-z

HP214

8

PG
lNnl0PF

'81 adjusted to
obtain ,the forced
hFE desired

-380-.]
PW Varied to Attain

TURN-OFF TIME

50

~o
05pF

IC=10DmA

Use inductive switching
driver as the input to
the resistive test. circuit

20",F

I---+------+--------,-='-coil" 180 ~H

1000

,L

Rcoil '" 0.05 n

Leon- 10 mH Vee'" 10 V

Rcoil '" 0.7 0
Vclamp - V ceo(sus)

Vee

MTM14N05

=20V

INDUCTIVE TEST CIRCUIT

Pulse Width = 25/.1s

OUTPUT WAVEFORMS

tf Clamped

l!!

VCC,..250V

RL'" 25.n

-Voff

Onve

Vclamp = Rated VCEX Value

RESISTIVE TEST CIRCUIT

q Adjusted to
Obtain Ie

1C

5

"U
0:

.ffi

t2 ... Lead (lCpk J

Vcl amp

Test Equipment
Scope - Tektronix
475 or EqUIValent

01n

"Adjust -V such that VSE(off) "" 5 V except as required for RS SOA (Figure 12).

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

Ic ... _

/

,..,

vCEM

I

90% VCEM A1\90% ICM

.,/
IC""""

-

1,\

Vclamp

1"ffl~1t'_i-11'-

r--Isv

I~ rtc-l. r-

V
vCE

10% vCEM

1 8 - i- 90% '81

-- --\- -'-'

--

I'\.
10", ......
leM

-- -- -

-

~

r-2'IIIC

In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since theY are in phase. However, for inductive
loads which a~common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave·
forms are not in phase. Therefore, separate measurements
must be made on each ";aveform to determine the total
switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10-90% Vclamp
tfi = Current Fall Time, 90-10% Ie
tti = Current Tail, 10-2% Ie
tc = Crossover Time, 10% Vcl amp to 10% Ie

TIME

- continued -

1 ~522

MJ10008. MJ10009

TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tc! f
Typical inductive switching waveforms are shown in
Figure 7_ In general, trv + tfi = t c - However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at TC = 25°C and has become a
benchmark for designers. However, for designers of
high frequency converter circuits, the user oriented
specifications which make this a "SWITCHMODE"
transistor are the inductive switching speeds (tc and t sv )
which are guaranteed at TC = lOOoC.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN-ON TIME

I"..

""

........
]; 0.5

~
;::

~

Ip 25 ""I OUIV

ICVCI~'; ~%

/

I I

"
..........

0.2

FIGURE 9 - TURN-OFF TIME

VCC = 250 V
le/lB = 20
TJ=250e

~

'

r--

r--

]
~

0.2

/'

;::

~

5

....'d

10

.....

/

1.0'

/

./'

./

>1

V

tp::: 25 IJS, Duty Cycle..;;;; 2%

/

If

.... ......... ",

O. 1

......

0.1
1

~VCC-250V
r--lc/lB = 20
VBE(off)- 5 v
0.5 r--TJ = 250C

I,

" ......1'--

........

J

0.05
20

5
10
'e. COLLECTOR CURRENT (AMP)

1

20

IC. COLLECTOR CURRENT (AMP)

FIGURE 10 - THERMAL RESPONSE

..r;;;...-

-

I-

~

Plpk)

tSUl
~~~

ZIIJC(!) ~ r(t) RIIJC

ROJC"" l°CiW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN

READ TIME AT 11

TJlpk) - TC· Plpk) Z"Clt)

DUTY CYCLE, 0 '" qlt2

I, TIME

1-523

(ms)

1111I

I I

10

10

I I IIIIII
50

100

I

I

I I I I II

200

500

lk

MJ10008. MJ10009

SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in Figures 11 and 12 are

specified ratings for these devices under the test conditions shown.

FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA
50

--

20
10
5

0::
~

5

I-

10,u5
100,us

2

ill

'"i3'"

1m.

1

'"

0.2

-'

0.1~

0

~

-

8 0.05

.. Bonding Wire limit
de

Thermal Limit@Tc-25OC

(Singl. Pulsel

Second Breakdown limit

~0.02

MJ1000:~

0.01
0.005
6

10

50

20

MJ10009
200

100

450 600
500

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on TC : 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve on
Figure 13.
TJ(pk) may be calculated from the data in Figure 10.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 12 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA (MJ10009)
20

I

18

,

0:: 16

'"

r---

5 14

I-

I
'"
0

~

0

'~
"'

\

TC=1000C
ICIISl ;;'20

12

~

10

For MJ10008, the turn-off
8 r-Ioad line limits art 50 V less.

6

VSE(off) = 5 V
=2V
=OV-

4
2
0
0

\\\
\' l\..

~

"'

\.

400
200
100
300
VCE. COLLECTOR·EMITTER VOLTAGE (VOL TSI

500

REVERSE BIAS
For inductive loads. high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as VCEX(sus) at a given
collector current and represents a voltage·current condi·
tion that can be sustained during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area
characteristics. See Table 1 for circuit conditions.
FIGURE 14 - REVERSE BASE CURRENT versus
VBE(off) WITH NO EXTERNAL BASE RESISTANCE'

FIGURE 13 - POWER DERATING
100

i!

0

~ t--.

'-..

"'" ""'-

80

'"ot;

........ ..........,

Therma~

~ 60

Derating

(.0

z
;::

~40

,/'

Forward Bias

--til

Second Breakdown -

"-

r--..

...... :--....,

"'-.

.....

'"~

2_

o

............
40

120
80
TC. CASE TEMPERATURE (OCI

160

..,/

,./

V
IC· lOA

See Table 1 for conditions,

Figure 7 forwaveshape .

.........
o

,/'

5

,.

.......

~ 20

,/'

,-

Derating

r--........

200

0
VBE(off). REVERSE BASE CURRENT (VOLTSI

1-524

/""

MJI0011

®

MOTOROLA

III

DARLINGTON
HORIZONTAL DEFLECTION TRANSISTOR

8.0 AMPERE

NPN SILICON
DARLINGTON
POWER TRANSISTOR

· .. specifically designed for use in deflection circuits.
•

VCE(sat) = 3.0 Volts (Max)@IC=4.0Am ps,IB=200m ....
A=--_+-,

•

Built·ln Damper Diode

•

VCEX = 1400 Volts

1400 VOLTS
BOWATTS

• Glassivated Base·Coliector Junction
• Safe Operating Area @ 50 JJs = 25 A, 200 V

MAXIMUM RATINGS
Symbol

Value

Unit

VCEX

1400

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current - Continuous

IC
ICM

8.0
16

Adc

IB
IBM

2.0
4.0

Adc

IE
IEM

10
20

Adc

Po

80
0.6

Watts

TJ. Tstg

-65 to +150

°c

Symbol

Max

Unit

R8JC

1.56

°CIW

TL

275

°c

Rating
Collector-Emitter Voltage

Peak (1)

Base Current - Continuous
Peak (1)

Emitter Current - Continuous
Peak (1)

Total Power Dissipation@:Tc= 25 u C
Derate above 2SoC
Operating and Storage Junction
Temperature Range

Thermal Resistance, Junction 10 Case

t. ..

W/oC

.0

-

K

----.---~

a

THERMAL CHARACTERISTICS
Characteristic

Jf.]tJlr

Maximum Lead Temperature for

U
ST,(LE 1
PIN 1. IMSE
2. EMITTER

Soldering Purposes:
1.S" from Case for 5 Seconds
(1) Pulse Test: Pulse Width "" 1.0ms, Duty Cycle

CASE COLLECTOR

< 10%.

NOTES
1. DIMENSIONS Q AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE O.

CO

fiGURE 1 - fORWARD BIAS SAfE OPERATING AREA

1*11.13lo.oo'I@lrlv@1
FOR LEADS

I *11.1310.00'I@T I v@1 G@I

20

,.

"6:

10

$

5.0

4 DIMENSIONS AND TOLERANCES PER
ANSI Y14.S,1973

1.0 ms

I ::~
f-

'"'"

0.5

~ 0.2
-

TC - 25°C

0.1

BONDING WIRE LIMIT
THERMAL LIMIT ISINGLE PULSE)
SECOND BREAKDOWN LIMIT

20.05

~O.02
0.01
0.005
7.0

de

10

20
30
50 70 100
200 300
VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)

500 700

1-525

CASE 1-(15
TO·204AA

MJ10011

III

ELECTRICAL CHARACTERISTICS

(TC

= 25 0

unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

700

-

-

Vde

ICES

-

-

0.25

mAde

50

mAde

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage

(lC

= 100 mAde, IS = 0)

Collector Cutoff Current
(VCE

= 1400 Vde,

VSE

= 0)

Emitter Cutoff Current

(VBE

= 4.0

Vde, IC

IESO

= 0)

ON CHARACTERISTICS (1)

Collector-Emitter Saturation Voltage
(lC
(lC

= 3.5 Ade,
= 4.0 Ade,

IS
IS

Base Emitter Saturation Voltage
(lC
(lC

IS

-

-

-

3.0
3.0

-

-

2.0
2.0

1.2

2.0

Vde

-

= 0.2 Ade)

Forward Diode Voltage

(IF

VSE(sati

= 3.5 Ade,ls = 0.15 Adc)
= 4.0 Ade,

Vde

VCE(sat)

= 0.15 Ade)
= 0.2 Ade)

Vf

= 4.0 Ade)

Second Breakdown Collector Current with Base Forward Biased

See Figure 1

ISlb

SWITCHING CHARACTERISTICS
Fa" Time (See Figure 2)
(lC = 4.0 Ade, IS1 = 0.2 Ade)

= 2%.

(1) Pulse Test: Pulse Width';; 300 IlS, Duty Cycle

FIGURE 2 - FALL TIME TEST CIRCUIT
Dnver Supply
+24 V

c

680

0014j.1F

O.OlSjJ.F
Freq

Ad,
5 k

22k
12 k

0.0075/

Width

AdJ,

1k

1 8 ~

CapaCitor valu,"

In

10

/-IF. resistors 114 watt unless

5W

otherWise noted

+125 V

FIGURE 3 - OC CURRENT GAIN
200

V~E! 5.~ ~
Te: 25°C

i-

z 100
;;'

"'

~

50

=>
'-'

1\

'-'

"
~

20

10
0.1

0.2

0.5

1.0

2.0

'e, COLLECTOR CURRENT (AMP)

1-526

5.0

10

Vde

®

MJ10012
MOTOROLA

NPN SILICON POWER DARLINGTON TRANSISTOR

10 AMPERE

The MJ10012 is a high-voltage, high-current darlington transistor
designed for automotive ignition, switching regulator and motor control applications_
•

Collector-Emitter Sustaining Voltage VCEO(sus) = 400 Vdc (Min)

•

175 Watts Capability at 50 Volts

•

Automotive Functional Tests

POWER TRANSISTOR
DARLINGTON NPN SILICON
400 VOLTS
175 WATTS

Collector

Base

Emitter

~}E 1=1'

MAXIMUM RATINGS
Symbol

Value

Unit

Collector·Emitter Voltage

VCEO(SUS)

400

Vdc

Collector·Emitter Voltage

VCER

550

Vdc

Collector-Base Voltage

VCBO

600

Vdc

Emitter-Base Voltage

VEBO

B_O

Vdc

IC

10
15

Adc

Rating

,-

STYlE 1
PIN 1. BASE
2.

(RBE • 27 n)

Collector Current - Continuous
-Peak (1)

Base Current
Total Power Dissipation @TC

==

25°C

IB

2.0

Adc

Po

175

Watts

100
1.0

Watts
W/oC

-65 to +200

°c

@TC' 100°C

Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ, Tstg

NOTES
1 DIMENSIONS Q AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM
3 POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q

OJ

I tll.13 10.0051@ IT Iv@1
FOR LEADS

I tll13100051@Tlv@1 o@1
4 DIMENSIONS AND TOLERANCES PER

ANSI Y145,1973

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

R9JC

1.0

DC/W

TL

275

DC

Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds

MILLIMETERS
DIM

MIN

MAX

A

•
C

D
E

F

(1) Pulse Test: Pulse Width"" 5.0 ms, Duty Cycle <; 10% ..

G

H
J
K

a

R
U

V

39.37

2108
7,62
0.97
109
140
1.78
30,158&C
109298C

63'

5.46BSC
!B8SBSC
11.18 1219
381
4.19
26.67
5'33
4.83
381
419

INCHES
MIN MAX
1550
0.830
0.250 0300
0.038 0.043
0055 0070
1187 sc
0.43088e
02158&C
a.B65BSC
0.440 0480
0150 0165
1.050
0190 0210
0150 0165

CASE 1-05
TO-2D4AA

1-527

EMITIER

CASE COLLECTOR

MJ10012

ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)

I

Characteristic

I

Min

Typ

Max

Unit

VCEO(sus)

400

-

-

Vde

VCER(sus)

425

-

-

Vde

ICER

-

-

1.0

mAde

ICBO

-

-

1.0

mAde

lEBO

-

-

40

mAde

hFE

300
100
20

550
350
150

-

-

2000

-

-

-

-

1.5
2.0
2.5

-

2.5
3.0

VSElon)

-

-

2.8

Vde

Vf

-

2.0

3.5

Vde

Symbol

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage (Figure 1)
(lC

= 200 mAde, IB = 0, Vclamp =Rated VCEO)

Collector-Emitter Sustaining Voltage (Figure 1l
(lC = 200 mAde, R BE = 27 Ohms,
Velamp = Rated VCER)

Collector Cutoff Current

= 27 Ohm,)

(Rated VCE R, RBE

Collector Cutoff Current
(Rated VCSO, IE

= 0)

Emitter Cutoff Current

=0)

(VES = 6.0 Vde, IC

ON CHARACTERISTICS (1)

DC Current Gain
(lC = 3.0 Ade, VCE = 6.0 Vde)
(lc = 6.0 Ade, VCE = 6.0 Vde)
(lc = 10 Ade, VCE = 6.0 Vde)

Collector-Emitter Saturation Voltage

Vde

(lC = 3.0 Ade, IS = 0.6 Ade)
(lC = 6.0 Ade, IS = 0.6 Ade)
(lC = 10 Adc, IS = 2.0 Ade)

-

Base-Emitter Saturation Voltage

Vde

VBE(sat)

(lC = 6.0 Ade, IB ~ 0.6 Ade)
(lC = 10 Ade, IS = 2.0 Ade)

Base-Emitter On Voltage
(lC = 10 Ade, VCE

-

VCE(sed

=6.0 Vde)

Diode Forward Voltage
(IF = 10 Ade)
DYNAMIC CHARACTERISTICS

Output Capacitance
(VCS

= 10 Vde, IE =0, fte,t = 100 kHz)
(VCC

= 12 Vde,

'IC = 6.0 Ade,
ISl = IS2 = 0.3 Ade) Figure 2
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base-F orward 8 iased
Pulsed Energy Test (See Figure 12)

-

See Figure 10

IS/B'

-

IC2L

-2-

I

-

J

180

mJ

(1) Pulse Test: Pulse Width = 300 IlS, Duty Cycle = 2%.

FIGURE 2 - SWITCHING TIMES
TEST CIRCUIT

FIGURE 1 - SUSTAINING VOLTAGE
TEST CIRCUIT
Vee"" 20 Vdc

10V.sLSL

oV

I

:

Vee"" 14 V
L'" 10 mH

'.

--jtl:--

o

100

fo5ms-l
220
Vcl

• Adjust t1 such that
Ie reaches 200 mA
at VeE = Vclamp

-

amp

~5~~

Adjust UntIl

~25~+=12V

2!l

L--.J

En

51
27

Vcl amp
VCEO(sus)

= 400

Vdc

VCER(sus) '" 425 Vdc

1-528

.l=12V

,

~-=- .....- - - " ' V v , , - -...-H
IN3947

Ie = 6

~ Eo

.---+---\--(

A

MJ10012

FIGURE 4 - COLLECTOR·SATURATION REGION

FIGURE 3 - DC CURRENT GAIN

2000

z 100

--

;;' 500

I
u

Cl

~

25'C

/

300
200

V

>

.\ ~

02

1\

~

VeE 0 3 Vdc

0.3

2:

1.8

S

1.4

~

I

-

~
0.6

I-

o

m

-

2.4

- - - VBElsatl@ICIlB 05
------ VBEI,nl@VCE 06 V

0, 2

0.1

8'

0.2

>

0.3

~

-15bc

1.6

-30'C

25 0 C_

1.1

0.8

0.5 0.1
1
2
IC, COLLECTOR CURRENT IAMPI

-- 0.2

V

"
~

-' o. I
o. 5
o. 3
o. 2

150'C

VCE 0 250 Vdc
TJ = 150'C

....

/

/

IC OICIES
TJ - 25'C
IcllB -20
VCE 012 Vdc

1.

f--15'C

I

F=251,C
!:;REVERSE

O. 1
0.2

10

FIGURE 8 - COLLECTOR CUTOFF REGION

tt
1

i.(.~.

0.3
0.5 0.1
1
2
3
, Ie, COLLECTOR CURRENT IAMPI

t,

w

............
_-i'"

f--

0.1

FIGURE 7 - TURN·OFF SWITCHING TIME


~ 2.5

II . . . . . V

V

100

30

~

II TJ 0 150'C

1000

'"

3

0;

0.3

0.5

0.1
IC. COLLECTOR CURRENT IAMPI

10

20

10- 1
-0.2

FORWARD

o

+0.2

+0.4

VBE, BASE·EMITTER VOLTAGE IVOLTSI

1-529

+0.6

+0.8

MJ10012

'"

FIGURE 9 - THERMAL RESPONSE

W

N

1
7

I'" ~:
w

D' 05

5

O. 3

~

0.2

~ o. 2

!!l
ffi'"

1-:05

o.

~

:J:

eo

E

0.0 7 - 0.02
0.05 _ 0.01

~w
11

0.03....t""'..-

~ 0.0

2~G~EPU~SE
I I

~
::: 0.0 1
'"

--

"""'0.1

0.01

0.02

-

t2

PULSE TRAIN SHOWN
READ TIME AT q

DUTY CYCLE, 0 '" t1M.

TJ(pkl- TC' P(pkl ROJC(tl

I
0.1

0.05

0.2

0.5

10
t,

ROJC(tl' '(tl ROJC
R8JC - 1.0' crw Max
o CURVES APPLY FOR POWER

IIIIII

I III II

20

50

100

200

500

1.000

2.000

TIME (msl

FIGURE 10 - FORWARD BIAS SAFE OPERATING AREA
0
Q

,

0

100

,;;-=

5.0ms

5
1

10ms- f-

1

1

de

1

0.0 1
0.00 5
5

TC' 25 0 C

--

"" ""

BONDING WIRE LIMIT
- THERMAL LIMIT (SINGLE PULSE)
SECONO BREAKDOWN LIMIT
10

10

30

50

70

100

100

300

500

VCE. CDLLECTDR·EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability
of. a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate Ie-VeE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based onTe = 25 0 e;TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when Te;;' 250 e. Second breakdown limitations
do not derate the same 'as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
T J(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 12 - USAGE TEST CIRCUIT

FIGURE 11 - POWER DERATING
100

0

0

10mH

~~

""

Stancore

"'..........

THERMAL
DERATING

C2688
1.5
VCC· 12 Vdco---<"'~WIr--...fY"V'V"'---.

SECOND BREAKDOWN
DERATING-

..........

~

"'-

Vz· 400 V

10 Vdc

f:::::

o~

t--...

~

............

~

I

20

I

220
)--"V\/\,--!2N3713

"""

0
0
40

80

120

TC. CASE TEMPERATURE ('C)

""

160

1N4933

27

0.3
I'F

200
t1 to be selected such that Ie reaches 6 Adc before switch·off.

NOTE'
"Usage Test," Figure 12 specifies energy handling capabilities
in an automotive Ignition circuit.

1-530

®

MJI0013
MJI0014

MOTOROLA

l1li
10 AMPERE

NPN SILICON
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS

POWER DARLINGTON
TRANSISTORS

The MJ10013 and MJ10014 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for lineoperated switchmode applications such as:

•

•
•
•
•

550 AND 600 VOLTS
175 WATTS

y

Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Control,
Deflection Circuits

~,

•

Fast Turn-Off Times
1t1100
250 ns Inductive FAil Time-25°C (Typ)
500 ns Inductive Crossover Time-25°C (Typ)
l.4l1s Inductive Storage Time-25°C (Typ)

•
•

Operating Temperature Range: -65 to +2000 C

Designers Data for
"Worst-Case" Conditions
The Designers Data Sheet permits
the design of most circuits entirely from
the information presented_ Limit datarepresenting device characteristic
boundaries-are given to facilitate
"worst-case" design_

~151

100°C Performance Specified for:
Reversed Biased SOA With Inductive Loads
Switching Times With Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Symbol

MJ10013

Collector-Emitter Voltage

VCEOI.u.)

550

Collector-Emitter Voltage

VCEV

650

Ratina

I MJ10014
1 600
I 700

Unit
Vdc
Vdc

Emitter Base Voltage

VEe

e

Vdc

Collector Current - Continuous
- Peak (1)

IC
ICM

10
15
7
10

Adc

Po

175
100
1

Watt.

w/oe

TJ,T.tg

-65 to +200

°e

Base Current

la

Continuous
- Peak (1)

IRM

Total Power Dissipation@Tc '" 25°C
@TC· 100°C

Derate above 2SoC
Operating and Storage Junction

Adc

NOTES
1 DIMENSIONS Q AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM.
3 POSITIONAL TOLERANCE FOR
MOUNTING HOLE 0

W

1_1113(Ooo'I@ITlv@1
FOR LEADS
I *1113(OO05I@T Iv@1 Q@I

Temperature Range

4 DIMENSIONS AND TOLERANCES PER

THERMAL CHARACTERISTICS
Char.cteristic
Thermal Resistaoce, Junction to Case

ANSIY145,1973

Mo.

Unit

RSJC

1

°C/W

TL

275

°e

Symbol

Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pul.e Test: Pulse Width

= 5 m., Duty Cycle';

STYLE 1

DIM

PIN 1 BASE
Z. EMITTER

A
B

CASE CDLLECTDR

C

o

•
F
G

10%

"
J

K

Q

R

U

1-531

. MJ100'13, MJ10014

111

ELECTRICAL CHARACTERISTICS ITC

1

=

2SoC unle" QiherwlS""noted)·:

Chl,.oteri.tic··

".

1

Symbol

.1

Min"

f

~,
';ryp

.1

MIX

.,

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)

IIC

= 100 mA, 18 = 0)

Collector Cutoff Current
IVCEV = Raled Value. VBEloff)
IVCEV = Raled Value, VBEloff)

ICEV

= 1.5 Vdc)
= 1.5 Vdc, TC = 150°C)

COllector Cutoff Current

IVCE

550
600

-

-

-

mAde

0.3
5

.-

ICER

5

mAde

lEBO

175

mAde

= Raled VCEV, RBE = 50 n, TC = 100°C)

Emitter Cutoff Current

IVEB

Vdc

VCEOlsu.)
MJ10013
MJ10014

= 2 Vdc, IC = 0)

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased.

See

Figur~

13

DN CHARACTERISTICS (2)

DC Current Gam
IIC
IIc

hFE

= 5 Adc, VCE = 5 Vdc)
= 10 Adc, VCE = 5 Vdc)

20
10

Collector-Emitter Saturation Voltage

IIc
IIc

= 10 Adc,
= 10 Adc,

IB
IB

VCE!.al)

=2 Adc)
= 2 Adc, TC = 100°C)

Base-Emitter Sat":lration Voltage

IIc
IIc

= 10 Adc,

IB
= 10 Adc, IB

= 10

500
250'

-

-

2.5
2.6
3
'3

-

Vdc

-

Vdc

VBEI.at)

= 2 Adc)

.-

-

-

Vf

-

3

5

I hfe I

10

-

-

-

Cob

100

350

pF

Id

-

0.02

0.2

0.9

2

us
us

0.95
0.2.2

4
1

U'

-

tc

-

2.3
1

6
3

us
u'

ts
.t c

-

-

1.4
0.5

-

U'

tfi

-

0.25

-

".us

= 2 Adc, Tc = 100°C)

Diode Forward Voltage (1)

IIF

-

-

Vdc

Adc)

DYNAMIC CHARACTERISTICS
Smail-Signal Current Gain

IIc

= 1 Adc, VCE = I!) Vdc, f test = 1 MHz)

Output Capacitance

IVCB

= 10 Vdc,IE = 0, fle~1 = 100 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)

Delay Time
Rise Time

Storage Time

IVCC = 250 Vdc, IC = 10 A,
IBI =400 rnA, VBEloff) = 5 Vdc, Ip
Duly Cycle .. 2%1.

= 50 U',

Ir
I.

Fall Time

If

U'

Induclive Load, Clamped ITable 1)
Storage Time

Crossover Time
Storage Time

Crossover Time

(lC ~ 10 Alpk), Vclamp = 250 Vdc,IB'1
VBE{off) ~ 5 Vdc, TC = 100°C)

= 1 A,

(lC = 10 Alpk), Vcl amp = 250 Vdc, IBI
VBEloff) = 5 Vdc, TC = 25°C)

= 1 A,

Fall Time

Is

(1) The inter!"al Collector-ta-Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Tests have' shown thal the Forward Recovery Voltage IV,) of this diode is comparable to that of tvpical fast
recovery rectifiers.

(2) Pul.e Test: 'PW

=300 1", Duty Cycle .. 2%.

1-532

-

MJ10013, MJ10014

TYPICAL CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN

40O'

-

200

z

l,..;

~ 100

Ia
c

~

lS00~

~>

2.S

'"
!'"

V

'"
~8

VCE = S V

~

>
0.2

0.3

O.S 0.7
IC. COLLECTOR CURRENT (AMP)

10

ID

,

2.2

\

0

V

4
O.lS

3.4

'"w

./

10

~
w

'"'"

2SoC

20

"

TJ" 2SOC

0

"-

60
40

u

;

TJ!

FIGURE 2 - COLLECTOR SATURATION REGION

~.~

IC=2.SA \ SA
1.6

N
III-+- U.
f\

1
0.01

0.02 0.03 0.OSO.070.1
0.20.3 O.SO.7 1
lB. BASE CU RRENT (AMP)

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

2

3

S 7 10

FIGURE 4 - BASE-EMITTER VOLTAGE

2.S

2.41-4--1--+--14-+ . _ - vBE(",) @IclIB = 10 l"'=H+1+O

~0
~
w

1-4--1--+--14-+- --VSE(oo)@3V=VCE+-H-J.41+l
l.S

ICIIB -10

'"'"

!:;
0
>
:>

-t~V

--

TJ = 2SoC

,

I )CIIB-~
V

./

TJ=lS0oC
O.S

o

0.1

0.2

0.3

1.2

-

O.S L..-.J.......L-...::I:::=
....::L.l.J....L.LL--Li_..l...'-L-LJ...l..LLU
0.1
0.2 0.3
O.S 0.7 I
10
IC. COLLECTOR CURRENT (AMP)

10

FIGURE 6 - OUTPUT CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION

1000
700
~ 500

104
/'

-VCE-2S0V

/

-

/

Tr moc

2

/'

~300

/

S

f=R ......

t--Fjrward

10- 1
-0.2

...... i'-r-.,

~ 70

:='"
'"
".
J

/

2SoC

TJ = 2SoC

~100

-'

1

......

~ 200

100°C
7SoC

V

f--+-+-+-+-+--+--l-olH""""-::==-TJ = l'SODC+-+-I-+-+-I--I-l

O.S 0.7
IC. COLLECTOR CURRENT (AMP)

3

----

50
30

Crb

0
10

+0.2

+0.4

+0.6

+O.S

VBE. BASE-EMITTER VOLTAGE (VOLTS)

1-533

0.4 0.6

4 6 10
20
40 60
VR. REVERSE VOLTAGE (VOLTS)

100

200

400

MJ10013, MJ10014

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

VCEOlsusl

III

RESISTIVE

RBSOA AND INDUCTIVE SWITCHING

~1

.

20

oJ'L

S~
~Q

01

adlusted to

-2

obtlun specified

8

Ie IRes.ltlve
SWitching,

Pulse Width

PW Varied to Ana,n
Ie" 250 mA

.....
-·w

""
U>

U~

!!: ..

2N2907

02 2N2222
Pulse Width

'=

SO

'IS)

LeOd - 10 mH Vee"' 10 V
R eol , " 0 7 n
Vcl amp " VCeO(~sJ

03
.,.

MJE210

2N3762

D.

MJE200

01

1NS14

02

lNS14

03

lN914

LCDII = 180 /oIH

Vee = 250 V

RcOII=OOSH
Vee = 20 v

Pul~e Width = 50~.

AL" 25

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

n

RESISTIVE TeST CIRCUIT
t1 Adjusted to

....:;

Obtain Ie

t1 ... L.COll(ICpkl

u

Vee

a:

U

t2 "" Lco,I(lCpk l

...E

Vclamp
Test EqUipment
Scope - TektroniX
475 or EqUivalent

SWITCH.ING TIME NOTE
In resistive switching circuits, rise, fall, ;mdsto~age times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and vol~age wave·
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.

t sv ; Voltage Storage Time, 90% IS1 to 10% Vcl amp
trY ~ Voltage Rise Time, 10-90% Vcl amp
tfi ; Current Fall Time, 90-10% IC
tti ; Current Tail, 10-2% IC
te ; Crossover Time, 10% Vel amp to 10% IC
An enlarged portion of the turn·off waveforms is shown in
Figure 7 to aid in the visual identity of these terms.

- continued -

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

'~
./

".,

I

Vclamp _

1"\

'IV~ ~fi- r-',i-

V
VCE

1(1% Vclamp
~

t-

-

J

..:... -Isv

1---1 f-'c~

IS-

-

J
IC -10 A
'S1-1 A

90%Vclamp ~90%1C

./
,C.,.;'

FIGURE 8 - PEAK REVERSE CURRENT
8. 0

90% lSI

- --\- -- --... -- -..........

~

-'\.

5.0

./

--

./'

10%·......
ICPK- 2%IC

-

2. 0

/'

V

V

./

V-

./

1.0
1.0

TIME

1-534

2.0
5.0
VSE(ott). BASE·EMITIER VOLTAGE (VOLTS)

8.0

MJ10013, MJ10014

TYPICAL CHARACTERISTICS

I

...

SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during' the crossover interval and can be obtained
using the standard equation from AN-222:
PSWT = 1/2 Vcclc(td f
In general, trv + tfi '" tc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2!PC and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (tc and t sv ) which are guaranteed at
1000 C.
RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN-ON TIME

FIGURE 10 - TURN-OFF TIME

1.0

1

--

O. 7t=Tr250C

O. 51= ICIIB" 10

O. 7

I-Vcc-250V

O. 3

"V
./

0.2

.]
~

]

"\..

o. 1

~ 03

0.05
0.03
0.0 2

...-

--

I"'\..

~

VBElolt)" 5 v
VCC" 250 V
ICIIB" 10
TJj50C

O. 1

t-

'd -

4.

r--

;::

-

;;',0.0 7

r--

O. 5

1

0.0 1
1

1.5

15

10

10

Ie. COLLECTOR CURRENT lAMP)

IC. COLLECTOR CURRENT lAMP)

FIGURE 11 - THERMAL RESPONSE

'-'
z

~

~ '5
....I

5

400
500
200
300
600
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

700

FIGURE 14 - POWER DERATING
100

.

~

80

0

t;

:l:

60

'"

~ :--.

i'--.

"""I"'" ""'-

z
;::

g

........ ~ SecDnd Breakdown Derating

............

. . . . t--...

i'..

Thermal Deratmg

40

...............

"-

0

'"~

~

........
20

o
o

..........
40

80
120
TC. CASE TEMPERATURE (OCI

1-536

160

"'"

200

®

MJI0015
MJI0016

MOTOROLA

'II

50 AMPERE

SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE

NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 and 500 VOL TS
250 WATTS

The MJ10015 and MJ10016 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for lineoperated switch mode applications such as:
• Switching Regulators
• Motor Controls
• Inverters
• Solenoid and Relay Drivers
• Fast Turn-Off Times
1.01ls (max) Inductive Crossover Time - 20 Amps
2.51ls (max) Inductive Storage Time - 20 Amps
• Operating Temperature Range -65 to +200 o C
• Performance Specified for
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

B

L

t
MAXIMUM RATINGS

~--+
K

SEATING
PLANE

Symbol

MJ10015

Collector·Emltter Voltage

VCEOlsusl

400

Collector-Emitter Voltage

VCEV

600

Rating

I MJ10016
I 500
I 700

B.O

Vdc

IC
ICM

50
75

Adc

IB
IBM

10
15

Adc

Po

250
143
1.43

Watts
W/oC

-6510 +200

°c

-Peak 111

= 2SoC

@TC: 100°C

Derate above 25°C
Operating and Storage Junction
Temperature Range

T J, Tstg

J-

Vdc

VEB

-Peak 111

-F

Vdc

Emitter Base Voltage

Base Current - Continous

STYLE 1,
PIN 1. BASE
2. EMlnER

CASE. COLLECTOR
DIM

•
8

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering Purposes:
118" from Case for 5 Seconds

Symbol

Max

Unit

A6JC

0.7

°C/W

TL

r

0

Unit

Collector Current - Continuous

Total Power Dissipation@Tc

'E

C

.

275

°c

C
D
E
F

G
H
J
K

0
R

(1) Pulse Test: Pulse Width: 5 ms, Duty Cycle'; 10%

MILLIMETERS
MIN
MAX

INCHES
MI.
MAX

39.37
21.08
7.62
1.60
3.43
29.90 36.40
10.67 11.18
5.21
5.72
16.64 17.15
11.18 12.19
3.84 4.09
24.89 2&.67

1.510
0.760
0.250
0.057

38.35
19.30
6.35
1.45

-

1.550
0.830

6.3110
0.063
6.135

-

1.177

1.197

0.420
0.205
65
0.440
0.151
0.980

0.440
0.225
0.410
~1&1

CASE 197·01
MODIFIED TO-3

1-537

1.050

MJ10015, MJ10016

lIB

ELECTRICAL CHARACTERISTICS

ITC

a

2SoC unl ... otherwise noted)

Characteristic

Symbol

Min

Typ

Max

400
500

-

0.25

mAde

350

mAde

Unit

OFF CHARACTERISTICS (11
COllector-Emitter Sustaining Voltage (Table 1)

(lc = 100 rnA, IB

= 0, VCl amp = Rated VCEOI

Collector Cutoff Current
(VCEV = Rated Value, VBE(offl

VCEO(,u,1

= 1.5 Vdcl

Emitter Cutoff Current

(V EB

ICE V

-

-

lEBO

-

-

MJloo15
MJ10016

= 2.0 Vdc, IC =01

Vdc

-

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

See Figure 7

Clamped Inductive SOA with Base Reverse Biased

See Figure 8

ON CHARACTERISTICS (11
DC Current Gain
(lC = 20 Ado, VCE
(lC =40 Ade, VCE

Collector-Emitter Saturation Voltage

(lC
(lC

-

-

25
10

-

-

-

-

VBE(,atl

-

2.2
5.0

-

2.75

Vde

Vf

-

2.5

5.0

Vde

Vdc

VCE(,.tl

= 20 Ade, IB = 1.0 Adc)
=50Adc,IB = IOAdel

Base-Emitter Saturation Voltage
(lc = 20 Adc, IB = 1.0 Adc)
Diode Forward Voltage (2)

(IF

-

hFE

=5.0 Vdcl
=5.0 Vdcl

= 20 Adc)

DYNAMIC CHARACTERISTIC

Output Capacitance
(VCB = 10 Vdc, IE

=0, f test = 100 kHz)

SWITCHING CHARACTERISTICS
Resistive L.oad (Table 1)

Delay Time

(V CC = 250 Vdc, IC = 20 A,
IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp

Rise Time
Storage Time

-

td
t,

=25 ps

t,

Duty Cycle" 2%).

Fall Time

tf

0.14

0.3

0.3

1.0

p'
p,

0.8

2.5

ps

0.3

1.0

lIS

1.0

2.5

0.36

1.0

Inductive Load, Clamped (Table 1)
Storage Time

Crossover Time

I

I

(lC = 20 Alpk), Vcl amp -250 V,ISI
VSE(off) = 5.0 Vdcl

= 1.0 A,

I

tSY

I

I

tc

I

-

lIS

I

(1) Pulse Test: Pulse W,dth = 300 ps, Duty Cycle .. 2%.
(2) The internal Collector-ta-Emitter diode cer, eliminate the need for an external diode to clamp inductive loads. Tests have shown that
the Forward Recovery Voltage (Vt) of this diode is comparable to that of typical fast recovery rectifiers.

1-538

lIS

MJ10015, MJ10016

TYPICAL CHARACTERISTICS

100

z

2.4

50

"'"

Ig

20

1

II.

FIGURE 2 - COLLECTOR·EMITTER
SATURATION VOL TAGE

FIGURE 1 - OC CURRENT GAIN

"-

./

l"-

~c

I'\.
\

TC ' 15°C
VCE' 5.0 V

!I

J

1/

1.0
ICIIS' 10
1.6

~
w

\

VV

>
>'

1\

0

Ih

«
'"
S 1.2
c

A
If

V"

ITJ '150C

..l.----j-- r-

O.S

..J...-:I--'
5.0
0.5

1.0

10
1.0
5.0
IC, COLLECTOR CURRENT lAMPS)

10

0.4
0.5

50

FIGURE 3 - BASE·EMITTER SATURATION VOLTAGE

c

IC/ls'IO

>

2,0

./
1.6

:>
1.2
O,S
0,5

10

TJ' 25°C

---

I-

>-

~~

V V
V

r---- TJ " 1150e
101

'"

c

~

I-'"

10

I

c

u

i--"

~1O 0

I

2.0

5,0

10

20

:/

~1O 3

I-:i--""
TJ'150oC

i

1.0

V

V

...-

r---- t--750C

.-

~REVERSE

FORWARO

EE150C

10- I
-01

50

+02

+04

VBE. BASE EMITTER VOLTAGE {VOLTS)

FIGURE 5 - OUTPUT CAP'!\CITANCE

I

10001'--..

r--.

TJ

~

25°C

w
<.>

z

~ 500

<3

It

........

~

!; 300

r--...

~
c

200

100
0.4

L

L

ISO0

j

50

t--- t- loo oe

IC' COLLECTOR CURRENT lAMP)

~

20

FIGURE 4 - COLLECTOR CUTOFF REGION

./17

~

c

«
'"
S

5,0

~VCE'150IV

2.4

w

iLU

2,0

10

IC, COLLECTOR CURRENT lAMP)

1,S

~

TJ ,150°C

I--

...... r---

1.0

4.0

10

40

VR, REVERSE VOLTAGE IVOLTS)

1-539

100

400

+06

·08

MJ10015, MJ10016

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING

VCEX AND INDUCTIVE SWITCHING

TURN·ON TIME

..
z

... 0

,,;:

Puis. Width

to
-z

181 adjusted to
obtain the forced

adjusted to
obtain specified

8

"FE d.sired

Ie (Res,.tlve

TURN-OFF TIME

SWitching,
Pulse Width
= 25 pil

PW Varied to Attain

'C"'OOmA

-v,
a,
a2
a3
ao

Leoll = 180 ~H

Reali ='0 05 n
VCC=20V

INOUCTIVE TEST CIRCUIT

2N2907

a5

MJE200

2N2222
2N3762
MJE210

D'
D2
D3

lN914
lN914
lN914

Use inductive ,wltching
circuit" t".lnput to
the r.,/stive tltStcircult.

Vee = 250 V
RL= 125n
Pulse Width = 25,us

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS
t1 Adjusted to
Obtain Ie

t1 ... L.C011(ICpk)

Vee
t2'" LC011{ICpk)

Vc lamp
Test Equip..,...el'lt

Scope - Tektronix
475 or Equn/slant

-Adjust -V such that VBE(offl "" 6 V except as required for RS SOA (Figure 8).

FIGURE 6 - INDUCTIVE SWITCHING MEASUREMENTS

I~

......- ......- I

~clamp_ -

90% Vclamp A1\ 90% Ie

.,/
le"""'-

!,

I,

trvffl ~tf;- ;--tH-

i --tsv

1--1 f-Ic~

V
VeE
IB-

--

10%Vclamp

r- 90% IBI
--\- --

tsv
trv
tfi
tti
tc

-

"-

10% .......
lepK-

'"i%Tc"

--- - -- -

= Current Fall Time, 90 -10% IC
= Current Tail, 10-2% IC
= Crossover Time, 10% Vcl amp to 10% IC

For the designer, there is minimal switching loss during
time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-222:

-

s~orage

f...--

'-

= Voltage Storage Time, 90% 181 to 10% Vcl amp
= Voltage Rise Time, 10-90% Vclamp
.

TIME

SWITCHING TIMES NOTE

PSWT

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine the
total switching time. For this reason, the following new
terms have been defined.

=

1/2 VCCIC(tc!f

In general, try + tfi '" tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified and has become a benchmark for
designers. However, for designers of high frequency converter circuits, the user oriented specifications which
make this a "SWITCH MODE" transistor are the inductive
switching speeds (tc and t sv ) which are guaranteed.

1-540

MJ10015, MJ10016

Th. Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the tast conditions shown.

SAFE OPERATING AREA INFORMATION
FORWARD BIAS

FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA

o

~ 10
,.55.0

de

I-

~ 2.0
MJ10015

~ 1,0

~ 0.5
j

MJ10016

TC - 25°C

~ 0.2

BONDING WIRE LIMIT
THERMAL LIMIT
ISINGLE PULSEI
SECOND BREAKDOWN LIMIT

0.1~,

80.05

~0.02
0.01
0.005

1.0

20

5.0

10

20

50

100

200

500

1000

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown, Safe operating area curves indicate IC- VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25 0 C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;;' 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found
at any case temperature by using the appropriate curve
on Figure 9.

VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI

REVERSE BIAS
FIGURE 8 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA

For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn·off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 8
gives the complete RBSOA characteristics.

50

\

\

0

\

Turn off Load Lme
-

Boundary for MJ10016

\

_ The locus for MJl0Q15
IS 100 V less

\
\

-~>10
Bl

'\.

i'...

VBEloffl ~ 5.0 V
-

o
o

TC~250C

100
200
300
400
VCE, COLLECTOR-EMITTER VOLTAGE IVOLTSI

500

FIGURE 10 - TYPICAL REVERSE BASE CURRENT
versus VBEloff) WITH NO EXTERNAL BASE RESISTANCE

FIGURE 9 - POWER DERATING
100

0

0

~t--...

0

'"

I"--.
i"'..

.......

Derating

--til

Forward 818S
Second Breakdown -

t-.....

Therma~

r-.....

I'..
I'-.

0

"

0

" "'-

0

40

aD
120
Te, CASE TEMPERATURE lOCI

a

,-

Deratmg

I'--

160

,/

9

7

V

6

4

V

V

5

r--......

V

V

IC

~

20 A

V

3
2 ~ Sea Table 1 for conditions,
Figure 6 tor waveshape.
1

'"

0

200

4

6

VaEloff). REVERSE BASE VOLTAGE IVOLTSI

1-541

III

MJI0020
MJI0021

III

D~~si~'n(,I's

®

MOTOROLA

Data Sheet

60 AMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTORS

. SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE

200 and 250 VOLTS
250 WATTS

The MJ10020 and MJ10021 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for lineoperated switchmode applications such as:

Designer"s Data for
''Worst Case" Conditions

• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers

The Designers Data Sheet permits
the design of most circuits entirely
from the information presented. Limit
data - representing device characteristics
boundaries - are given to facilitate
"worst case" design.

• Fast Turn-Off Times
150 ns Inductive Fall Time at 25 0 C (Typ)
750 ns Inductive Storage Time at 250 C (Typ)
• Operating Temperature Range -65 to +200 0 C
• lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Rating

Symbol

CollectorwEmitter Voltage

VCEO(susl

Collector-Emitter Voltage

VCEV

MJ10020 IMJ10021.

200
300

J
I

Vdc

350

Vdc

Eminer Sase Voltage

VEB

8.0

Vdc

Collector Current - Continuous

IC
ICM

60
100

Adc

Base Current - Continuous
- Peak (1)

IB
IBM

20
30

Adc

Total Power Dissipation @ T C = 250 C
@TC= 1000 C

Po

250
143
1.43

Watts

TJ, T stg

-65 to +200

°c

-Peak (11

Derate above 250 C
Operating and Storage Junction

lJ~F'B

Unit

250

C

Ie

SEATING

-t
!

0

PLANE

STYLE 1:

PIN 1. BASE
2. EMITTER

~~~_+-

__-.CASE. COLLECTDR

a

W/oC

Temperature Range
MILLIMETERS

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case
Maximum Lead Temperature for Sbldering Purposes:
118" from Case for 5 Seconds

Symbol

Max

Unit

R8Jc..

0.7

oCIW

TL

275

°c

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle'; 10%

DIM MIN
A 38.36
8 19.30
C
6.35
1.46
0
E
F
29.9D
G 10.67
H
5.21
1 .64
K 11.18
Q
3.84
R 24.89

-

MAX
39.37
21.08
7.62
1.60
3.43
30.40

11.18
5.72
17.1
12.19
4.119
26.87

INCHES

MIN
T.510

0.760
0.250
0.057

-

1.177
0.420
0.206
55
0.440
0.151
0.980

CASE 197-01
MODIFIED TO-3

1-542

MAX
1.550
0.830
0.300
0.063
0.135
.19
0.440
0.225
0.4lIO
0.161
1.050

MJ10020, MJ10021

ELECTRICAL CHARACTERISTICS

(TC = 250 C unle.. otherwise noted)

I

Characteristic

Symbol

Min

TVp

Max

Unit

VCEO(sus)

200
250

-

-

-

Vde

-

-

0.25
5.0

OFF CHARACTERISTICS
Collector· Emitter Sustaining Voltage (Table 1 )
(lC = 100 mA, IB = 0)

MJ10020
MJ10021

Collector Cutoff Current

(VCEV
(VCEV

ICEV

= Rated Value, VBE(off) = 1.5 Vde)
= Rated Value, VBE(off) = 1.5 Vde, TC = 1500C)

Collector Cutoff Current

(VCE

= Rated VCEV, RBE = 50 n, TC = 1000 C)

Emitter Cutoff Current

(VEB

= 2.0 V, IC =0)

mAde

-

ICER

-

-

5.0

mAde

lEBO

-

-

175

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

See Figure 14

ON CHARACTERISTICS (1)
DC Current Gain

(lC

hFE

= 15 Ade, VCE = 5.0 V)

Collector-Emitter Saturation Voltage

(lC
(lC
(lc

=30 Ade,
= 60 Ade,
=30 Ade,

IB
IB
IB

1000

-

-

2.2
4.0
2.4

V8E(sat)

=30 Ade, 18 = 1.2 Ade)
=30 Ade, I B = 1.2 Ade, T C = lOOOC)

-

Vde

-

-

3.0
3.5

Vf

-

2.5

5.0

Vde

t(!

-

0.02

0.2

p..

0.30

1.0

p.s

1.0

3.5

p.s

0.07

0.5

p.s
p.s

-

=30 Ade)

Vde

-

Diode Forward Voltage

(IF

-

VCE(sat)

= 1.2 Ade)
= 4.0 Ade)
= 1.2 Ade, T C = l00 0C)

Base-Emitter Saturation Voltage

(lC
(lC

75

DYNAMIC CHARACTERISTICS
Output CapaCitance
(VCB = 10 Vde, IE = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time

Rise Time
Storage Time
Fall Time

= 175 Vde, IC =30 A,
= 1.2 Ade, VBE(off) = 5.0 V, tp = 25 p..

!VCC
IBI

Duty Cycle .. 2.0%1.

t,
ts
tf

Inductive Load, Clamped (Table 1)

Storage Time
Crossover Time

Storage Time

Crossover Time
Fall Time

ICM = 30 A(pk), VCEM = 200 V, IBI -1.2 A,
VBE(off) = 5 V, TC = 1000 C)

= 30 A(pk), VCEM = 200 V,
VBE(off) = 5 V, TC = 250 C)

(lCM

IBI

= 1.2 A,

(1) Pulse Test: PW = 300 "s, Duty Cycle .. 2%

1-543

1.2

3.5

0.45

2.0

p.s

t.v

-

0.75

p..

te

-

0.25

-

tti

-

0.15

tov
te

p..
p..

MJ10020, MJ10021

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN

1000
700
500

......
.,' ..... ~

z
;;: 200
co
,...

ii'i

::;
B
...,
c

...

w
~

TJ=25"C

...... ......
'"

4.0

g
""
~

~

\

2.5
2.0

1'=30 A

1.5

-IDA

~

1.0
0.5 ICjlr

VCE = 5.0V

IIII

10
3.0

5.0 7.0

10

50

20
30
IC. COLLECTOR CURRENT (AMPS)

70.

0.01

100

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE

2.4

t:

2.1

'">

1.8

~

1.5

""

;0

!

'"

~

...,
'"

~

~c

IC/IB = 25

2.4

co 2.1

:;
TJ = 2S'C

.....:; ~

0.9

~

1.8

'">
""
~

'"

1.5
1.2

~

~

Tr 100'C

O.S

TJ = 25'C

-;:,;.

il

."
."

~

--t'=100'C

I'"'-"

0.9

~

0.6

> 0.3

0.3
0.1

0.2

0.4

S.O B.O 10
40
20
IC. COLLECTOR CURRENT (AMPS)

SO 80100

=VCE-2S0V

100
500

./

B r-- f-l00'C
102

~100

70 100

FIGURE 6 - OUTPUT CAPACITANCE

./
./

§ r- TJ=125'C
1

SO

3.0
S.O 7.0 10
20
30
IC. COLLECTOR CURRENT (AMPS)

1000

liD3
'"c

2.0

1.0

FIGURE 5 - COLLECTOR CUTOFF REGION

10

.....
.....

<

104

~

,.

2.7

~
w

IC/IB = 25

1.2

>

2.0.3.0 5.07.0 10

3.0

gc 2.7
co

0.020.030.050.070.1
0.2 0.3 0.5 0.7 1.0
'B. BASE CURRENT (AMPS)

FIGURE 4 - BASE-EMITTER VOLTAGE

3.0

~
w

=SOA

\

8

30

\

\

3.0

g;

2.0

,

~ 3.5

~I

1.0

TJ = 25'C

co

70
50

20

i\

!:i 4.5

'"
;-

./

100

5.0

;;;

TJ =100'C

TJ-25'C

.........

-

I - - r-7S'C

r-..

I

0

I

............

.....

I - - r - 2S ' C
+0.2

.........

0

I

10- 1
-0.2

r-...

+0.4

+0.6

+0.8

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-544

100
3.0

S.O

7.0

10

20
30
50 70 100
VR. REVERSE VOLTAGE (VOLTS)

f"""o

t--

200

300

MJ10020, MJ10021

TABLE 1 - TEST CONOITIONS FOR OYNAMIC PERFORMANCE
VCEOllus!

"ESIITIVE

RBSOA AND INDUCTIVE SWITCHING

SWITCH IN
TURN ON TIME

20

n

. :.:n.....

~1

2

~E
20

I a 1 adjUIt4td to
obtain the forced
hFE d",red

PulseW,dth
.d/uned to
obta,n specified

~2

-~
U

Ie lR.",.y.

TURN·OFF TIME

SWitch.";,

pw V,ned to Att,in
'C'''' 100mA

t:~

""
u~

!!'C
U>

Pull,Wldth

U .. inductlv, swltchi ....

: 25 ""I

circuit .. the mput to
"tiv. tett circuit.

th.,..

L eo,'- 10 mH Vee" 10 V
Reoll - 0 1 n

L.eod = 180 ~H
Rcoil ~ 005 n
VCC=20V

Vel.mp " VCEO(sull

INDUCTIVE TEST CIRCUIT

0'
02
03

2N2907
2N2222
2N3762

Q4

MJE15029

as

MJE15028

0'
02
03

lN914

Vee" 175 V

lN914
lN914

RL· 6.6 n
Pulse Width"

25~.

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS
t1 AdJulUd 10

Obte,n

Leod OeM)

' 2 'Vcl
-amp
--

--.Vclamp

Test ECjlllpment
Scopa - T.ktronll(
475 or EqUivalent

---1- ,

= 5 V except.; required for RBSOA

'Adjust - V such that VSE(off)

(Figure 14l.
FIGURE 8 - TYPICAL PEAK REVERSE BASE CURRENT

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

10

IC~

/"

..... 1

,/"

~CEM

~

9.0

Vclamp

B.O

J

90% VCEM 1\90% ICM

f--- f---Isv

IC/

I"

~ 7.0

"....~

ffli-Jt 111- 1-- 1,,_

f--, f-Ie --\ t--

1/
VCE
IS-

-

10%"'"
lCM

-- --\- -- -"-'""

--

-- -

.-

1--"-

5.0

w

4.0

~

2% IC

:;;

3.0

g 2.0

-

.,..,

6.0

~

"'"'-'

1"-

10% VCEM
90% lSI

2.S

.,. 2.4

IC =30 A
ISp1.2A

".

~ 2.0

"~ 1.6 ~

,

~

>

~ 1.2
~ 0.8

o

1.0

4.0
3.0
2.0
5.0
6.0
VSE(ofl). SASE-EMITTER VOLTAGE (VOLTS)

o

o

2.1

IC/ls= 25 -

....

I

"""'"' r-t---. ....

""
1.0

2.4

ICM=~OA

100...

tc@25~ I'---..

0.4

-

~;~~~:C=200 V _

FIGURE 9 - TYPICAL INDUCTIVE SWITCHING TIMES

f'...

..".

V'

1.0

o

3.2

..",.

,...

V
",. 10-"""

TIME

'"

Ie

-

I.S :.:
o

I
~

'-

r-- ....

~
1.5 ~

Isv@\OOOC _

1.2 ~

g

L

0.9 ~

tsv@25 0 C

....

0.6 ~
le@ 1000 C

5.0
2.0
3.0
4.0
6.0
VSE{off). BASE-EMITTER VOLTAGE (VOLTS)

0.3 [
7.0

B.O

7.0

B.O

MJ10020, MJ10021

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
For the design/lr, there is minimal switching loss
times have been defined and apply to both current and
during storage time and the predominant switching
voltage waveforms since they are in phase. However,.
power losses occur during the crossover interval and can
for inductive loads which are common to SWITCHMODE
be obtained using the standard equation from AN-222A:
power supplies and hammer drivers, current and voltage
PSWT = 1/2 Vcclc(tclf
waveforms are not in phase. Therefore, separate measureIn general, trY + tfi ~ te. However, at lower test currents
this relationship may not be valid.
ments must be made on each waveform to determine
the total switching time. For this reason, the following
As is common with most switching transistors, resistive
new terms have been defined.
switching is specified at 25 0 C and has become a bench.tsv = Voltage Storage Time, 90% ISlto 10% VCEM
mark for designers. However, for designers of high fretrv = Voltage Rise Time, 10 - 90% VCEM
quency converter circu its, the user oriented specifications
tfi = Current Fall Time, 90 - 10% ICM
which make this a "SWITCHMODE" transistor are the
tti = Current Tail, 10 - 2% ICM
inductive switching speeds (tc and tsvl which are guarantc = Crossover Time, 10% VCEM to 10% ICM
teed at lOOoC.
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
RESISTIVE SWITCHING
FIGURE 10 - TYPICAL TURN-ON SWITCHING TIMES
10
7.0
5. 0
3.0
2.0

FIGURE 11 - TYPICAL TURN-QFF SWITCHIN.G TIMES
2. 0

VCC-175 V
IC/ls =25
TJ =25'C

VCC-175 V
IC/ls - 25
VSE(OFF) - 5 V
TJ-25'C

1. 0
O. 7

o. 5

1.0

O. 7
] O.5
w 0.3
'" O. 2
;::
., o.1
0.0 7
0.05

in

.....

.3

./

I,

Is

o. 3

1/

o. 2

~

~ o. 1

1'...

If

0.0 7
0.05

td

0.03

0.0 2

0.03

0.0 1
0.6 0.81.0

r--

0.0 2

2.0

3.0

5.0 7.0

10

20

40

60

0.6 0.81.0

2.0

3.0

5.0 7.0

10

20

40

60

IC, COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

FIGURE 12 - THERMAL RESPONSE
1.0

ROJC(t) - ROJC
ROJC(t) =OJ'CIW Max

.... i-""'"

....

1

....... i--"
0.0 1
0.1

Determine t2 for power
pulse and read r(t).

TJ(pk) =TC + P(pk) ROJC(tl

SINGLE PULSE

UL

ioo""

ltl~

1.0

10

100
t, TIME (MS)

1-546

1000

10000

MJ10020, MJ10021

The Safe Operating Area figures shown in Figures 13 and' 14 are
specified for these devices under the test conditions sbown.

SAFE OPERATING AREA INF;ORMATION
FORWARD BIAS

FIGURE 13 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TC = 25 0 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse Iim its are valid for duty cycles to 10% but must be
derated when TC;;' 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 13 may be found
at any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 12.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

;;:-

"::;
~
a'"cc

10

de

1.0

iii;;:

1m,

"

~

1---- SONOING WIRE LIMIT
0.1 ~ ___ THERMAL LIMIT (SINGLE PULSE)
~ SECOND BREAKDOWN LIMIT

8
:2

MJ10020
0.01
1.0

2.0

5.0

10

20

50

100. 2001300

VCE. COLLECTOR EMITTER VOLTAGE IVOLTS) 250

FIGURE 14 - MAXIMUM RBSOA, REVERSE BIAS
SAFE OPERATING AREA
100

I

~ 90

"
~
a

::;
I-

"'"

~

8

'"~

I

I

REVERSE BIAS

I ICIIB ;'25 I

SO

For inductive loads, high voltage and high current
must be sustained simultaneously during turn·off, in most
cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 14
gives the R BSOA characteristics.

250C .. TJ .. 100°C

70

I
I

60
50

TUR~-OFF

I
I

I
I

LlN~

L6AD
40
r--BOUNDARY FOR MJ10021
30 r-- THE LOCUS FOR MJ10020
IS 50V LESS
20

:i

;> 10

o

o

I
I

50

I
I
100

VBElofl): 5 V

\\-

VSElofl) - 2 V

loy

I
I
150

'\(
200

VSE(ofl): 0 V

<,

250

300

VCEM" COLLECTOR-EMITTER VOLTAGE IVOLTS)

FIGURE 15 - POWER DERATING
10O.

.""i'---

~ 80

"'"
~

60

~

40

~ :--....

"""

I-

THERMA~
OERATING

~
;::

"'"

......

SECo~~~:i~~DOWN _

i'-...

i'...

"r-....

3

~ 20

o

o

40

"

120
80
TC. CASE TEMPERATURE I"CI

1-547

...................

i"'-........

160

"""

"""

200

III

MJI0022
MJI0023

-

®

Desig'ue"s Data

~hect

40 AMPERE

NPN SILICON
P,OWER DARLINGTON
TRANSISTORS

SWITCH MODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE

360 and 400 VOLTS
260 WATTS

The MJ10022 ~nd MJ10023 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for
line-operated switch mode appli.cations such as:

Designer"s Dat8 for
"Worst C~se" Con~itions

• AC and DC Motor Controls
•

Switching Regulators

• Inverters
•

MOTOROLA

The Designers Data Sheet permits
the design of most circuits entirely from
the information presented. Limit data
- representing device characteristics
boundaries - are given to faCilitate
"worst case" design.

Solenoid and Relay Drivers

• Fast Turn-Off Times
150 ns Inductive Fall Time @ 25°C (Typ)
300 ns Inductive Storage Time @ 25°C (Typ)
•

Operating Temperature Range -65 to +200o C

•

100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

c
Rating

Symbol

MJ10022 MJ10023

Uni.t

Collector-Emitter Voltage

VCEO(sus)

350

400

Vdc

Collector-Emitter Voltage

VCEV

450

600

Vdc

Emitter Base Voltage

VES

8.0

Vdc

Collector Current -

IC
ICM

40
80

Adc

Base Current - Continuous
- Peak (1)

IS
ISM

·20
40

Adc

Total Power Dissipation @ TC = 25°C
@TC=100°C

Po

250
143
1.43

Watts

TJ, Tstg

-65 to +200

°c

Continuous
Peak (1)

Derate above 25°C
Operating and Storage Junction
Temperature Range

Characteristic
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds

K

"_____-'-1 STYLE 1:
PIN 1. BASE

2. EMITTER
CASE. COLLECTOR

.-t-~-+-----.Q

W/oC

THERMAL CHARACTERISTICS

Thermal Resistance. Junction to Case

~~~-+

Symbol

Max

Unit

R8JC

0.7

°C/W

TL

275

°C

DIM

A
B
C
0
E
F
G
J

K
Q

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .;; 10%.

R

MILLIMETERS
MIN
MAX

INCHES
MAX
MIN

39.37 1.510
21.0B 0.760
7.62 0.250
1.80 0.057
3.43
29.90 30.40 1.171
10.67 I1.1B 0.420
5.21
72 0.25
17.15 .55
1
lUB 12.19 0.440
3.B4
4.09 0.151
24.89 26.67 0.9BO

38.35
19.30
6.35
1.45

CASE 197-01
MODIFIED TO-3

1-548

1.550
0.B30
0.300
0.063
0.135
t.t
0.440
0.225
0
0.480
0.161
1.050

MJ 10022, MJ 10023

III
I

ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

350
400

-

-

Vdc

-

0.25
5.0
5.0

mAde

-

175

mAde

-

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
(IC; 100 mA, IB; 0)

MJl0022
MJloo23

Collector Cutoff Current
(VCEV; Rated Value, VSE(off); 1.5 Vde)
(VCEV; Rated Value, VSE(off); 1.5 Vdc, TC; 150°C)

ICEV

Collector Cutoff Current
(VCE; Rated VCEV, RSE; 50 n, TC; 100°C)

ICER

-

mAde

Emitter Cutoff Current
(VEB ; 2.0 V, IC; 0)

IESO

-

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

See Figure 14

ON CHARACTERISTICS (1)
DC Current Gain
(IC; 10 Adc, VCE; 5.0 V)

hFE

Collector-Emitter Saturation Voltage
(IC ; 20 Adc, IB ; 1.0 Adc)
Ie ; 40 Ade, IB ; 5.0 Adc)
(lc ; 20 Ado, IS ; 1.0 Adc, TC; lOO°C)

VCE(sat)

Base-Emitter Saturation Voltage
(lC = 20 Adc, 18 = 1.2 Adcl
(lC = 20 Adc, IB = 1.2 Adc, TC

VSE(sat)

50

-

600

-

-

2.2
5.0
2.5

Vdc

-

=

Vdc

-

2.5
2.5

Vf

-

2.5

5.0

Id

-

0.03

0.2

lOS

-

0.4
0.9
0.3

1.2
2.5
0.9

.. s
!'s
!,s

1.9
0.6

4.4
2.0

!'s
!'s

0.3

-

=lOOoCI

Diode Forward Voltage
(IF 20 Adc)

-

Vdc

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCS; 10 Vdc, IE = 0, f lesl ; 1.0 kHz)

SWITCHING CHARACTERISTICS
Resislive Load (Table 1)
Delay Time
R.se Time
5toraae Time
Fall Time

(Vee; 250 Vdc, IC; 20 A, IB 1 ; 1.0 Adc,
VSE(off) ; 5.0 V, Ip ; 50 !'s,
DUly Cycle .. 2.0%)

I
Is
If·

Induclive Load, Clamped (Table 1)
Slorage Time
Crossover Time
Fall Time

Slor"lJe Time
Crossover Ti me
Fall Time

Isv

(lCM = 20 A. VeEM; 250 V, ISl ; 1.0 A,
VBE(off) ; 5 V, Te; 100°C)

Ie
Ifi
I sv
t,.
Ifi

(lCM; 20 A. VeEM = 250 V, ISl ; 1.0 A,
VBE(off) ; 5 V, TC; 25°C)

(1) Pulse Tesl: PW; 300 !'s, Duty Cycle'; 2%

1-549

-

-

1.0
0.3
0.15

-

-

!'S
!'s
.. s
!'s

MJ10022, MJ10023

-

TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 -

./

200

FIGURE 2 - COLLECTOR SATURATION REGION

DC CURRENT GAIN

300

:.---~

Joolc
1\

TJ = 2S0C,/

:.---

4.0 1-+-f-H+1-l+fl-++\-+-H-H+t+---+-'~+-H-+-H+l

~ 3.S 1-+-f-H-J.-jI+l-fl-++4-1-H-H+t+-+.l1\H+++-H+l

~ 1\
,\

\.\

30

2.0
S.O
10
IC. COltECTOR CURRENT lAMPS)

d:

2.0

ti

1.S

1-+-f-H-J.-j-lt-fl-+-I-J,I...lC~=J.j2L,!.0~A-I-+-+~#1+Il
f-W-+-l-l--l-I-l~+-I---1---1--Pl-l..Y+-~-+_+~-+-l-l-++I+I

1.0

f-++-+lf

~ O.S

\

VCFSV
1.0

3.0 I-+-f-H-J.-j-'+fl-++-~H-H+t+-+~.-I-H-+-H+l

~

1I

0.4

g

§ffi 2.S f-W----+-I-I-H+I+--++~I\+
\f+++++--++I~C\.-J=L4h!0+A.f.!.j

./

so

=

TJ

/v
/

S.O r-"--'----'-rT'TTTr'-r,..-"rn'"TTIr-'--'---'----'-rTTTn
_
TJ=100oc
~ 4.S I-+-f-H-t\l-l+fl-+-I+-+-H-H+t+--i\-\+--i--t-t-ffi+l

20

0.01

40

Ic/'a = 10

=
'"
C>

2.0

S.O

~ 1.8

~

1.S

1\l

12

0.9

:l
8 06
.

VCE @2Soc
VCE @ 100°C

~ 0.3

1.0

Ic/'a = 10

2.4

2.4
~ 2.1

,,-

--

/

'"
~

/

2.1

~ 1.8

V 12Ioc
aE~

'"~

1.5
;:: 1.2

10

......

0.3
20

0.4

40

FIGURE 5 - COLLECTOR CUTOFF REGION

f=VCE - 250 V

./

z

......

40

200

400

i'--

~

~ 102

10

20

~

~200

I-

'"

2.0
5.0
10
IC. COLLECTOR CURRENT lAMPS)

i'r-.,

1/

103

1.0

FIGURE 6 - Cob. OUTPUT CAPACITANCE

400

r-- 1-I00oC
::'" I r-- r--150C

W

~ 0.9
:> 0.6

2.0
5.0
10
IC. COLLECTOR CURRENT lAMPS)

f-- TJ -125°C

.-~

rh'

-~C

.

~

104

~

0.1
0.2
0.5 1.0
Is. aASE CURRENT lAMP)

2.7

§" 2.7

~

O.OS

3.0

3.0

j

0.02

FIGURE 4 - BASE-EMITTER SATURATION VOLTAGE

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE

~

iii ~-N-+--H--I-++l-l+---+--t==t='I"'l-+++tl

111111

5~

I
I

1'-1--

"-

5100
<.i

8

~

100

I-- 1--250C

50

10- I

-0.2

40
+0.2

+0.4

+0.6

4.5

+0.8

VBE. BASE·EMITTER VOLTAGE (VOLTSI

1-550

10

20
50
100
VR. REVERSE VOLTAGE (VOLTS)

MJ10022, MJ10023

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

III

RESISTIVE

RBSOA AND INDUCTIVE SWITCHING

VCEOlsUlI

MIT HING
TURN ON TIME

Put .. -.n:v

.J

Width]

,~

--'-'--r-'-""J

[

........

Pul,.W,dth
adlusted to
obtell'l.pec,fled

ZO

-Z

B

181 .,ju ...d to
Obtain the forcMt
hFE d ..lred

Ie (R","tVII

TURN-OFF TIME

SWltch,ng.
PW Varied to Anain

Pull. Width

le·,OOmA

= 25

U.. induc:'tIve lW.tetllnl
c:ircu It . . the input 10
the r••I,tive tNt circuit.

~,I

-v·
Leell'- 10 mH

Vee·

10 V

Leon '"

Reo,," 0 7 n

180~H

Reoll" 0 05

VClemp'" VCEOI,u.1

01
0,
OJ
04

n

VCC=20V

INDUCTIVE TEST CIRCUIT

2N2907

2N2222
2N3762
MJE15029

MJE15028
lN914
lN914
lN914

O.
01
0'
OJ

Vee" 250 V
RL" 12.5 n
Pul .. Width = 251J..

OUTPUT WAVEFORMS

RESISTIVE TEST CIRCUIT

t,

AdJu.~d

to

Obtain Ie

leM __
leLEZk=

't ~Iamped

Ve,!

~"
v~

~

"t-

__

L co,' (lCM)
1,~--­

-,-

Vc:I.",p

Ve lamp

Test EQ'Hpment

~,

Scope - TektronIX
475 or EqunllI'ent

1-'2-1

"Adjust - V such that VBE(off) = 5 V except as required for RBSOA (Figur. 14).
FIGURE 8 - TYPICAL PEAK REVERSE BASE CURRENT

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

10

ICIoI_

IC/

-

911% VCEM

~ 8.0

I1\911% ICM

:;

i--l I-t,~ r-

/

-----\- -- --- --

111%VCEM

90%181

"--"'"

--TIME

200
1.75

9.0

Vclamp

t"ffl~tfl-I-t,,-

-tsv

VCE

18 -

_

~

......- ".... I
/

VCEM

:'\.
10%·......
ICM

~ 7.0

ffi~
a

6.0
50

~ 40
t3.0
N

.!P

--

;;;1.25

.=,

25

o

Ic = 20 A

2.0
3.0
4.0
50
6.0
VSEloHI. REVERSE BASE VOLTAGE (VOLTS)

FIGURE 9 - TYPICjl.L INDUCTIVE SWITCHING TIMES

rrIO~OC
~
J
~IC@l~

ICM=20A
lSI = I A
VCEM = 250 V

t--

lsv @ 25°C

'\~

'" ""
....... ~

o

-

-

IB1 = I A
Vcl amp = 250 V TJ = 25°C

"....

1.0

;=

50

/

1.0

:g 1.00
.75

./

2.0

$V

1.50

V

~

~2% IC

.....-

...........

~

1.0

tc@2~ l -

I
2.0
3.0
4.0
5.0
6.0
VBEloH). BASE-EMITIER VOLTAGE (VOLTS)

1-551

7.0

8.0

70

8.0

MJ 10022, MJ 10023

..

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
tti = Current Tail. 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform
is shown in Figure 7 to aid on the visual identity of
these terms.

For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 Vcclc(tdf
In general, trv + tfi "" tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user orinented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and ts v ) which are
guaranteed at 100°C.

FIGURE 10 - TYPICAL TURN-ON SWITCHING TIMES

2.0

FIGURE 11 - TYPICAL TURN-oFF SWITCHING TIMES

2.0

_ VCC=250V
c ICIIBI = 20
~ TJ = 25°C

1.0

1.0
0.5

0.5

i=
f::
r-

I

VCC = 250 V
lellBl - 20
VBE(oll) = 5 V

Is

./

V

~Ir

./

~

.......... ['.

O. 1

~ 0.1

Id~ --

0.05

1.0

......11- ~

10.2

2.0
5.0
10
IC. COLLECTOR CURRENT (AMPS)

0.05

0.02

40

20

0.4

1.0

2.0
5.0
10
Ie. COLLECTOR CURRENT (AMPS)

40

20

FIGURE 12 - THERMAL RESPONSE
1. 0

.5

f= ~

5

..... 1--'"

-

R8JCCtI- r(tl R8JC
R8JC - 0.7 0 C/w Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME Atll
TJ(pk)- TC = P(pk) R6JC(t)

-

r;::: p-

-

0=.1

1

0.1

~

0=.2

2

0.0 1

0=.5

'-::

P(pkl

tJ1.Sl

Single Pulse

1:~~

II

OUTY CYCLE, 0 = tl/t2

11
1.0

100

10
t. TIME (MSI

1-552

1000

10000

MJ10022, MJ10023

SAFE OPERATING AREA INFORMATION

The Safe Operating Area figures shown in Figures 13 and 14 are
specified for these devices under the test conditions shown.

FORWARD BIAS

FIGURE 13 - MAXIMUM FORWARO BIAS
SAFE OPERATING AREA

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .. the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 13 may be found
at any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 12.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second br~akdown.

100
SO
;;; 20
~ 10
S.
S.O
2.0
'"
=>
<> 1.0
0
'"
O.S
!;i 0.2
::l
0
<> 0.1
-="O.OS
0.02

10/"
,
(TURN·ON SWITCHING)

~

f= __: __ ~~~~:A~ ~~E LTO
~

-

de

SECOND BREAKDOWN LTD
TC - 2S0C

1.0

2.0

MJ10022
MJ10023S.O
10
20
SO 100 200 400
VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 14 - MAXIMUM RBSOA. REVERSE BIAS
SAFE OPERATING AREA

REVERSE BIAS
For inductive loads. high voltage and high current
must be sustained simultaneously during turn-off. in most
cases. with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping. RC snubbing. load line shaping. etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-oft. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 14
gives the RBSOA characteristics .

~

~ 80
70

\

>-

i13

\

IC/IB;;' 20
60 2SoC,;;; TJ';;; 100°C \
'"
o SO
TURN-OFF LOAD
\
t; 40 LINE FOR MJl 0023

~

8

~

30 THE LOCUS FOR
MJ10022 IS SO V LESS
20

~ 10

o

o

\

~ 1--2 V .;;; VBE(off)';;; 8 V
.........

RBE = 24

n

100
200
300
400
SOD
600
700
VCEM • PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 15 - POWER DERATING

100

~ b-..

"'"

!! so

'"t;
0

""

.......

THERMA~

~ 60
z

OERATING

'";:::

~

..........

40

'"~

SECO~~~~~~~DOWN _

I"'-....

"'-

..........
....... r--...,

"

~ 20

o

o

40

120
80
TC. CASE TEMPERATU RE (DC)

1-553

..............
........

"

160

...........
200

III

MJI0024
MJI0025

Dl

®

MOTOROLA

Designer's Data Sheet

20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS

SWITCH MODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE

750 and 850 VOLTS
250 WATTS

The MJ10024'and MJ10025 Darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for
line-operated switch mode applications such as:

Qe.igner's Data for
"Worst Cas." Conditions

• AC and DC Motor Controls
• Switching Regulators

The DeSigner's Data Sheet permits
the design of most circuits entirely from
the informatio,n presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst .case" design.

• Inverters
Solenoid and Relay Drivers

•

• Operating Temperature Range -65 to +200~C

•

1DOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

~
"t:

~

100

15

~

6

J~E··
=f
t.
0

..

MAXIMUM RATINGS
Rating

2
CAS'

Symbol

MJ10024 MJ10025

Unit

Collector-Emitter Voltage

VCEO(sus)

760

850

Vdc

Collector-Emitter Voltage

VCEV

1000

1200

Vdc

Emitter Base Voltage

VEB

8.0

Vdc

Collector Current - Continuous

IC
ICM

20
40

Adc

IB
IBM

10
20

Adc

Po

250
143
1.43

Watts
W/oC

-65 to +200

°c

-Peak(1)
Base Current -

K

_ _ _.-1

STYLE 1
PIN 1.

Continuous

-Peak(1)
Total Power Dissipation @TC= 25°C
@TC=100oC
Derate above 25°C
Operating and Storage Junction
Temperature Range

Thermal Resistance. Junction to Case
Maximum Lead Temperature for Sqldering
Purposes: 1/8- from Case for 5 Seconds

m

1.11.13",,,,e ITlvel
FOR LEAOS

TJ, Tstg

1.1113""",e Tlvelael
4 DIMENSIONS AND TOLERANCES PER
ANSI Y145, 1973

DIM
A

•
C

THERMAL CHARACTERISTICS
Characteristic

NOTES
I DIMENSIONS Q AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM
3 POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q

a
E
F

Symbol

Max

Unit

R8JC

0.7

°C/W

H
J

TL

275

°c

n

G
K

R

u
V

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .;; 10%.

CASE 1-05

1-554

MJ 10024, MJ 1 0025

~

ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted)
Characteristic

'I

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table I)
(lC= l00mA,IB=O)

MJ10024
MJ10025

VCEO(sus)

Collector Cutoff Current

750
850

-

-

mAde

ICEV

-

-

ICER

-

-

lEBO

-

hFE

(VCEV = Rated Value, VBE(off) = 1.5 Vde)
(VCEV= Rated Value, V8E(off)= 1.5 Vde, TC = 150°C)
Collector Cutoff Current

(VeE = Rated VCEV, RBE = 50 n, TC = 100°C)
Emitter Cutoff Current

Vde

0.:i5
5.0
5.0

mAde

-

175

mAde

50

-

600

-

-

-

-

2.2
5.0
2.5

-

-

(VEB = 2.0 V, IC = 0)

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

Clamped Inductive SOA with base reverse biased

ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Ade, VCE = 5.0 V)
Collector-Emitter Saturation Voltage

Vde

VCE(sat)

(IC = 10 Ade, IB = 1.0 Ade)
IC = 20 Ade, IB = 5.0 Ade)
(lC = 10 Adc,IB = 1.0 Ade, TC = 100°C)
Base-Emitter Saturation Voltage

VBE(sat)

(IC = 10 Ade, IB = 1.0 Ade)
(IC = 10 Ade,IB = 1.0 Ade, TC = 100°C)
Diode Forward Voltage

-

Vde

-

2.5
2.5

Vf

-

1.25

4.0

Vde

Id

-

-

0.03
0.6

0.3
1.8

I'S

tr

(IF= lOAde)

DYNAMIC CHARACTERISTICS
Output Capacitance

(VCB = 10 Vde, IE = 0, f test = 1.0 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table I)
Delay Time
Rise Time
Storage Time

Fall Time

(VCC = 250 Vdc, IC = 10 A, IBI = 1.0 Ade,
VBE(off) = 5.0 V, tp = 50 I's,
Duty Cycle'; 2.0%)

ts
tf

2.0

5.0

0.6

1.8

2.9

7.0

1.0

3.3

Inductive Load, Clamped (Table I)
Storage Time
Crossover Time

Storage Ti me
Crossover Ti me
Storage Time
Crossover Time

-

(lCM = 10 A, VCEM = 250 V, IBI = 1.0 A,
VBE(off) = 5 V, TC = 100°C)

tsv
te

(ICM = 10 A, VCEM = 250 V, IBI = 1.0 A,
RBE = 24 n, TC = l000 C

tsv
te

-

21
9.0

50
25

I's

(lCM = lOA. VCEM = 250 V, VBE(off) = 5.0 V,
IBI Baker Clamped [1 Ampere Soureel,
TC= 100°C)

tsv
te

-

2.2
0.5

-

I's

(1) Pulse Test: PW = 300 I'S, Duty Cycle'; 2%

1-555

-

I's

!

I
Ii

il

MJ10024. MJ10025

FIGURE 1 - DC CURRENT GAIN

300

/'

1..-

r,

200
z
;;:

-....

~

\\

/
TJ - 100°C
TJ; 25°C
1.0
. 2.0
5.0
IC. COLLECTOR CURRENT (AMPS!

10

.

\

~

~

~1.0f--~T~J-;~25~0~CH+HP-+~~~~f=~-i-rtTtffi

'l\r~

-I I

0.5

11

~2.0f--H-+~~tIt--++~~,Hi~-t+~~~Hiffi

1\\

0.2

~

3.0

'";::.

2.4 I--

w

3.0

'"
~

1/

1.2

0.9

'"~

0.3

~
'" 0.6

~ 0.9 r-

1.0
2.0
5.0
Ie COLLECTOR CURRENT (AMPS!

10

20

0.2

...

I=VC(-25DV

a
'"'"
....
;

102
10 1

I--- -100°C

I - - -75°C

8

~100

1.0
2.0
6.0
Ie COLLECTOR CURRENT (AMPS!

10

20

200

400

I'r--

1/

10 3

0.6

FIGURE 6 - Cob. OUTPUT CAPACITANCE

400

f-- Tr 125°C

TJ; 100°C

.... 0.3

FIGURE 5 - COLLECTOR CUTOFF REGION

~

........... f--':I--'"

t-:::- I-r-

$'

104

....

~ 2ho~

~

gu 0.6

II
0.6

TJ

~ 1.2

TJ; 100°C

0.2

L

v

I

:E

I-- TJ - 25°C

".

j

t-11 J

~ 1.8
a:
1=1.5 r-

A

15

ti

16/1~; 15.b
2.4 r-

~ 2.1

2.1
§; 1.8

ffi

10

II

~ 2.7

'"~

!::
~

6.0

FIGURE 4 - BASE-EMITTER SATURATION VOLTAGE

~.J

Ici/lal;

0;1
0.5
1.0
la. BASE CURRENT (AMPS!

.

II

2.7

I

0.05

0.01

20

FIGURE 3 - COLLECTOR SATURATION VOLTAGE

~

II

Ic~M

r-

~

g 50 1/

20

Jill

ICI)l~ll

~ 3.0 f--H-+-t-1l\tttlt--++1-Hl:ttit-'HH-rtTtffi

VCE;10Y

V

1111

~ 40 t-:H--t-t-t\:~~'~.oL

z

~
13

'----'--""""-"T"TT'I'TTIIII.-rITrrJ'T"'l"'lUrrrr-"1"1'T"-rr1
11'TTTTl

5.0

~

I::;::: I-- :-- 1'.
I'\~
r'\YCE-50Y/

V

:: 100

FIGURE 2 - COLLECTOR SATURATION REGION

J".,

~200

/

w

f'...

'"z

5
:.

-

:"-

;'l100

...

....

~

I

I--- _25°C

10- 1
-0.2

o

+0.2
+0.4
+0.6
VBE. BASE·EMITTERVOLTAGE IVOLTS)

50
40
+D.B

1-556

4.5

10

20
60
100
VR. REVERSE YOLTAGE (VOLTS!

MJ 10024, MJ 1 0025

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE

RBSOA AND INDUCTIVE SWITCHING

SWITCH IN
TUfIIN ON TIME

I.@r:
Pull. Width
aeliullild to

t B 1 ed,YIMeI to

obUIn me fon:ed

obl"n,p.(:lfl~

hFE de.,red

'e

(R""I,ve
SWitching.
Pull.W,dth
= 2& ~.I

PW Vaned 10 Attain
Ie = 100mA

TURN·OFF TIME
U,. Incluct,l/e IWltch,".

circuit .. the ,nput to
therhlSt.ve"ltc,rc:ull
01
02
03
04

Leo,. '" 100 pH
Reo,." 0 05 n
VCC=20V

INDUCTIVE TEST CIRCUIT

2N2907
2N2222
2N3762

MJE16029

OS
01
02
03

MJE1602S
1N914
lN91.

Vcc~

250V

RL oc 25 n
pul.. Width = 25

lN91.

J,l.

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS
t 1 Adlulted to
Obte,n Ie

Leo.IOeMI

'2'"'---Vel.mD

-,Vel,mp

-i-"...j

Test Eqo.llpment

~,

Scope - T.ktronuc
475 or EqUivalent

'Adjust - V such that VBE(off) = 5 V except a. required for RBSOA (Figure 14).
FIGURE 8 - TYPICAL PEAK REVERSE BASE CURRENT

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

16

IC~

/"V

/
,C"""""

-

'\
90% VCEM

Vclamp

---j f-'c

/
10% VCEM

I

90% 181

----'

12

So

~

"-

.........-

10

./""

a:

a
w

ICM

8.0

'"
::li

6.0
:i<
~4.0

10%....... ~f-

2% IC

-- --\- -- -- -- -- "-'""

14

...:;;in

A~90%1CM

l"ifl~lfl- f-- ',,-

r-Isv

VCE

'8- -

VCEM
"'I.

V
2.0

1P

.........-

TIME

8.0

IBI = 1.0 A
VeEM = 250 V -

.
i

5.0

:

4.0
3.0
2.0
1.0

-

16

./'

14

-

~

"'-

i----

""

"'-

~25oc

"'-l-

/

...., ~ P"'"
:g 10
V
V
r/
~ 80
/ V
6.0
.=,

- r--

Isv@ 100 0 C

4.0
le@ 100°C_

2.0

Ie @ 25°e
1.0

2.0
3.0
4.0
5.0
6.0
VBE(olf). AEVERSE BASE VOLTAGE (VOLTS)

18

.. 12

~

il

20

IC~= 10~

\
.\

I

..... .........-

2.0
3.0
4.0
5.0
60
VBE(olfl. BASE·EMITTER VOLTAGE (VOLTSI

7.0

7.0

8.0

FIGURE 10 - TYPICAL INDUCTIVE SWITCHING TIMES

9.0

7.0

V

il

1.0

FIGURE 9 - TYPICAL INDUCTIVE SWITCHING TIMES

.. 6.0

I

I

------

10

.....

.......-

8.0

~ I-""'"

....J.---lisv @ 100°C I

/

I

@1~°S--r
t,,;:;:..-

........... I-"""""

t e @ 1000 e

Ie @ 25°e
lCM=10A
IBI = 1.0 A
25
VeEr =
V-

1

10
20
30
40
RBE. BASE·EMITTER RESISTANCE 10HMS)

1-557

50

MJ10024, MJ10025

III)

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this .reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS 1 to 10% VCEM
trv = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-1O% ICM
tti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform
is shown in Figure 7 to aid on the visual identity of
these terms.

For the designer. there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 Vcclc(tclf
In general, trv + tfi "" tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive

switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user orinented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and ts v ) which are
guaranteed at 100°C.

FIGURE 11 - TYPICAL TURN-ON SWITCHING TIMES

2.0

= VCC=250V

1.0

IC/ISI = 5.0

~ = TJ = 25°C

I liS 1 = 10

FIGURE 12 - TYPICAL TURN-OFF SWITCHING TIMES

5.0

-I

2.0

0.5

_f-'

.............

"t'-.

1

~

-

-

IS
.-I'"""

r-k
If

Ir

IV

.1

0.2

0.05

......

Id

IT

0.02
0.2

0.5

1.0
2.0
5.0
IC. COUECTOR CURRENT (AMPSI

le/lsl = 5.0
I- Vec = 250 V
ICIIS; =
0.1
VSE(.lfl - 5.0 V
TJ = 25°C
0.05
0.2
0.5
1.0
2.0
5.0
Ie. COLLECTOR CURRENT (AMPSI

-

10

20

r-

'10' .!-!-

1=
f::

10

20

FIGURE 13 - THERMAL RESPONSE
1.0

f= 1=0

.5

L.

f-- t;::: ;:;;---

0=.2

2

0=.1

1

~~

.....

-:

01

tJl..Il

Smgle Pulse

~;-~

Lli
III

0.01

R.JCltl- rlt) R.JC
R.JC = 0.7 oCIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At 11
TJlpk} - TC = Plpk} R.JCII}
Plpk}

1.0

~UTY

I
10

100

t. TIME IMS}

1-558

CYCLE, 0 = 11/12

1000

10000

MJ 10024, MJ 10025

SAFE OPERATING AREA INFORMATION

The Safe Operating Area figures shown in Figures 1 4 and 1 5 are
specified for these devices under the test conditions ahown.

FORWARD BIAS

FIGURE 14 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 14 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 14 may be found
at any case temperature by using the appropriate curve on
Figure 16.
TJ(pk) may be calculated from the data in Figure 13.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

40
20

~ 10

(TURN.O~°sWITCHING)

:;;

...5-z
~

1.0

a
a:
0

t;

de

~ 0.1

8

f=

.!d'

0.01
1.0

TC = 25°C
2.0

MJ10024
MJ10025

5.0
10
20
50
100 200
VCE. COLLECTOR· EMITTER VOLTAGE (VOLTS)

500 850

FIGURE 15 - MAXIMUM RBSOA. REVERSE BIAS
SAFE OPERATING AREA

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off. in most
cases. with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping. etc .
The safe level for these devices, is specified as Reverse
Bias Safe Operating Area and represents the voltagecurrent condition allowable during reverse biasedturn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode.
Figure 15 gives the RBSOA characteristics.

40

~

35

'"~ 30
a:

..,a:=>
a:
tl
..,,.~
0

RBE = 24!l

25
20
15

~ 10

Q.

1i 5.0
00

VBE(olf) = 5.0 V

\,

I
25°C ~ TJ

~

100°C

C/'B;;' 5.0

\ 1\
N

1400
200
400
600
800
1000 1200
VCEM, PEAK COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 16 - POWER DERATING
10 0

~ t-.....

'":""

~ 80

'"t;o

aERATING

'"z
;:
w

o

.........

THERMA~

~ 60
~

i'-..

SEC aNa B~EAKObwN_
aERATING

.........

!"--

"i'-..

40

'"~

o

40

"

120
80
TC, CASE TEMPERATURE lOCI

1-559

r--....
...............

;: 20

o

.........

........

160

" ""

200

MJ10041

®

MJI0044
MJl0047

Designer's Data Sheet

MOTOROLA

25, 50, and 100 AMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTOR

25 kVA ENERGY MANAGEMENT SERIES
SWITCHMODE DARUNGTON TRANSISTORS
25,50 and 100 Ampere Operating Current

250, 450 and 850 VOLTS
250 WATTS

These Darlington transistors are designed for industrial service
under practical operating environments requiring fast switching
speed for highly efficient systems operating at high frequency
such as inverters, PWM controllers and other high frequency systems operating from 120,230 and 460 V lines.

Designer'. Data for
"Worst-Case" Conditions
The Designer's Data Sheet permits the design
of most circuits entirely from the information

presented. limit data - representing device
characteristics boundaries - are given to facil~
itate "worst-case" design.

COLLECTOR

~N
STYLE 1:
v
PIN 1. BASE
2. EMmER
3 COLLECTOR

1rD

•

·"""'Ol~l1c9=t1f
I

[±]

"Emitter-Collector Diode is a fast recovery high power diode.
Note: The 8 ohm resistor is not included in the MJ10044 and MJ10047.

MAXIMUM RATINGS
Mechanical Ratings
Rating

Value

Unit

Mounting Torque (To heat sink with 6-32 Screw)
(Note 1)

8.0

in.-Ib

Lead Torque (Lead to bus with 5 mm Screw)
(Note 2)

20

in.-Ib

Per Unit Weight

41

grams

0.5

·CIW

THERMAL CHARACTERISTICS

_:

Thermal Resistance, Junction to Case, R//JC
Mica Insulators available 8S separate items.
0.003" thick. Motorola Part Numbor 14CSBI2387BOO3.

1. A Bollovilio washer of 0.281" 0.0" 0.138" 1.0" 0.013" thick and 43 pounds flat
is recommended.

2. The maximum penetration of the screw should be limited to 0.50".
3. To adapt the collector and emitter terminals to quick connect terminals. AMP
250 Series Faston tab PIN 61499-1 is suggested.

4. The mounting holes of this package are compatible with T0-204 (formerly
TO-3) mounting holes.

j

'. '.- •

NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND
T IS BOTH A DATUM SURFACE AND
SEATING PLANE.
2. POSITIONAL TOLERANCE FOR MOUNTING
HOLES:
!t!.0'0.251O.010J@!T!AG!BGI
3. DIMENSIONING AND TOLERANCING PER
ANSI V14.5. 19B2.
4. CONTROLLING DIMENSION: INCH
EXCEPT FOR METRICALLYTHREAOEO
INSERTS.
MILLIMETERS
INCHES
DIM MIN MAX
MIN
MAX
A 39.11 40.13 1.540 1.5BO
B 33.93 34.95 1.336 1.376
20.32
C
0.800
0.B3 0.021 0.033
D 0.68
E
B.30
B.Bl 0.321 0.341
F
4.44
0.115
G
29.61 BSC
1.16B BSC
H
5.0B BSC
0.200 BSC
J
0.93
1.09 0.031 0.043
K
25.40
1.000
L
2.92
3.30 0.115 0.130
N 11.14 11.39 0.615 0.6B5
Q 3.13
3.88 0.141 0.153
R 10.41 10.19 0.410 0.425
5.84
6.35 0.230 0.250
S
M5 .8 (METRIC TH RDJ
U
1.52 0.050 0.6
V 1.21
W 46
4
I
1
30.15 BSC
1.181 BSC
X

CASE 353-01

1-560

MJ10041,MJ10044,MJ10047

MAXIMUM RATINGS (Continued) (TC

= 25'C unless otherwise noted)

Symbol

MJ10041

MJ10044

MJ10047

Unit

Collector-Emitter Voltage (lB = 0)

VCEO

850

450

250

Vdc

Collector-Emitter Voltage (RBE = 10 Ohms)

VCER

900

500

300

Vdc

Collector-Base Voltage

VCB

900

500

300

Emitter-Base Voltage

VEB

Rating

Collector Current -

Collector Current Base Current -

Operating

(TC = 115'C)
(TC = 85'C)
fTC = 85'C)

Continuous
Peak Repetitive
Peak Nonrepetitive

IC(op)

IC

Continuous
Peak Nonrepetitive

Total Device Dissipation
Derate above T C = 25'C

8.0

-

-

100'

37.5
75
125

75
150
250

100
300
500

50

ELECTRICAL CHARACTERISTICS (TC

A

A

'B

25
50

A

Po

250
2.0
333

Watts
WI'C
Watts

TJ, Tstg

-55 to + 150
-55 to 200

'c

For I-minute overload
Operating Junction and Storage Temperature Range
For I-minute overload

-

-

25

Vdc
Vdc

= 25'C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 125 mAde)

VCEO(sus)
MJ10041
MJ 10044
MJ10047

850
450
250

Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150'C)

'CEV

Collector Cutoff Current
(VCE = Rated VCER, RBE = 10 n, TC = 100'C)

ICER

Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)

lEBO
MJl0041
MJ10044MJ10047

-

-

-

Vdc

-

mA
2.0
10
10

mA
mA

500
2.5

SAFE OPERATING AREA
Second Breakdown Collector Current with Base Forward-Biased

FBSOA

Clamped Inductive SOA with Base Reverse-Biased

RBSOA

Overload Safe Operating Area

OlSOA

See Figures 32, 34 & 36
Sea Figures 33, 35 & 37 .
See Figures 38, 39, 40, 41, 42 & 43

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, 'E = 0, ftest = 1.0 kHz)
(1) Pulse Test. Pulse width of 300 p.s, duty cycle ..... 2.0%.
*This rating is with a 50% duty cycle, and is limited by power dissipation. Higher operating currents are allowable at lower duty cycles.

MJ10041, MJ10044, MJ10047

ELECTRICAL C,",ARACTt:RISTICS (Continued) (TC = 25·C unless otherwise noted.)

I

Characteristic

Symbol

Min

Max

25

-

Unit

ON CHARACTERIST1CS (1)
MJ10041

DC Current Gain
(lc
(lC

hFE

= 25 Ade, VCE = 5.0 Vde)
= 25 Ade, VCE = 10 Vde)

40

Collector-Erriitter Saturation Voltage
(lC = 25 Ade, 18 = 2.0 Adel
(lC = 37.5 Ade, IB = 7.5 Ade)
(lc = 25 Ade, IB = 2.0 Ade, TC = 100·C)

VCE(sat)

Base-Emitter Saturation Voltage
(lc = 25 Ade, IB = 2.0 Ade)
(lC = 25 Ade,IB = 2.0 Ade, TC

VBE(sat)

=

l00·C)

-

-

Vde
2.0
5.0
2.5

Vde
3.0
3.0

MJ10044

DC Current Gain
(lc
(lC

hFE

= 50 Ade, VCE =
= 50 Ade, VeE =

50
60.

5.0 Vde)
10 Vdc)

Collector-Emitter Saturation Voltage
(Ie = 50 Ade, IB = 1.67 Ade)
(lc = 75 Ade, IB = 6.0 Adc)
(lc = 50 Ade, IB = 1.67 Adc, TC = 100·C)

VCElsat)

Base-Emitter Saturation Voltage
(lC = 50 Adc,IB = 1.67 Adc)
(lC = 50 Ade, IB = 1.67 Ade, TC

VBE(sat)

=

-

Vdc
2.0
3.3
2.5

Vde

-

-

100·C)

-

-

3.0
3.0

MJl0047

DC Current Gain
(Ie
(lc

=
=

hFE

100 Ade, VCE
100 Ade, VCE

= 5.0 Vdc)
= 10 Vde)

Collector-Emitter Saturation Voltage
(lc = 100 Ade, IB = 2.75 Ade)
(lC = 100 Ade, IB = 2.75 Ade, TC
Base-Emitter Saturation Voltage
(Ie = 100 Ade, IB = 2.75 Ade)
(Ie = 100 Ade, IB = 2.75 Ade, TC

75
90
VCE(sat)

=

-

3.5
3.5

Min

Typ

Max

Unit

td

-

0.03

0.25,

IJ.$

tr

-

1.2

5.0

ts

-

3.3

10·'

tf

-

1.5

5.0

10o-C)
oS;

Vde

-

-

100·C)

(1) Pulse Teat: Pulse width of 300 JLs, duty cvcle

-

2.0
2.5

VBE(sat)

=

-

Vde

2.0%.

ELECTRICAL CHARACTERISTICS (Continued) (TC

= 25·C unless otherwise noted.)

I .Symbol I

Characteristic·
SWITCHING CHARACTERISTlCS

MJ10041
Resistive Load
Delay Time
Rise Time
Storage Time

(VCC = 300 Vde, IC = 25 A, IBI
VBE(OFF) = 5.0 V, tp = 50 IJ.$,
Duty Cycle .. 2.0%)

= 2.5 A,

Fall Time
Inductive Load, Clamped
Storage Time
Crossover Time
Storage Time
Crossover Time

(lCM = 25 A,
VCEM = 300 V,
VBE(OFF) = 5.0 V,
IBI = 2.5 A)

TJ

=

100·C

tsv

Ie
TJ

= 25·C

tsv
te

1-562

-

5.0

15

3.0

10

3.5

10

1.5

5.0

IJ.$

MJ10041, MJ10044, MJ10047

..

ELECTRICAL CHARACTERISTICS (Continued) (TC = 25·C unless otherwise noted.)

I

Characteristic

Symbol

I

Min

Typ

Max

Unit

td

-

0.03

0.25

iJ.$

tr

-

0.9

3.0

-

1.5

3.8

0.4

1.3

SWITCHING CHARACTERISTICS
MJ10044
Resistive Load
Delay Time
Rise Time
Storage Time

(VCC = 250 Vdc, IC = 50 A, IBl
VBE(OFF) = 5.0 V, tp = 50 iJ.$,
Duty Cycle .. 2.0%)

=

1.67 A,

ts

Fall Time

tf

Inductive Load, Clamped
Storage Time
Crossover Time

Storage Time
Crossover Time

TJ

(lCM = 50 A,
VCEM = 250 V,
VBE(OFF) = 5.0 V,
IBl = 1.67 A)

=

tsv

100·C

tc
TJ

tsv

= 2S·C

tc

-

2.5

7.5

0.8

3.0

1.5

3.8

0.5

1.5

0.035

0.25

1.2

4.0

1.4

4.0

0.25

1.0

iJ.$

MJ10047
Resistive Load
Delay Time
Rise Time
Storage Time

td
(VCC = 150 Vdc, IC = 100 A, IBl
VBE(OFF) = 5.0 V, tp = 50 iJ.$,
Duty Cycle" 2.0%)

= 2.75 A,

tr
ts

Fall Time

tf

-

iJ.$

Inductive Load, Clamped
Storage Time
Crossover Time
Storage Time
Crossover Time

TJ

(lCM = 100 A,
VCEM = 150 V,
VBE(OFF) = 5.0 V,
IBl = 2.75 A)

=

tsv

100·C

tc
TJ

tsv

= 25·C

Ie

-

2.8

8.0

1.4

4.0

iJ.$

2.2

6.5

1.0

3.0

-

-

125

W

250

Apk

-

2.7
1.7
2.5

5.0
5.0
5.0

0.2
0.4
0.4

1.0
1.0
1.0

3.5
10
25

12.5
25
50

0.1
0.1
0.4

1.0
0.5
1.0-

C-E DIODE CHARACTERISTICS
Power Dissipation (lB

= 0)

Po

Single Cycle Surge Current (60 Hz)

IFSM

Forward Voltage (1)
(IF = 25 Adc)
(IF = 50 Adc)
(IF = 100 Adc)

MJ10041
MJ 10044
MJ10047

Reverse Recovery Time
(IF = 25 Adc, di/dt = 25 A/iJ.$)
(IF = 50 Adc, di/dt = 50 A/iJ.$)
(IF = 100 Adc, di/dt = 100 A/iJ.$)

MJ10041
MJ 10044
MJ 10047

Reverse Recovery Current
(IF = 25 A, di/dt = 25 A/iJ.$)
(IF = 50 A, di/dt = 50 A/iJ.$)
(IF = 100 A, dildt = 100 A/iJ.$)

MJ10041
MJ10044
MJ10047

Forward Turn-On Time (Compliance Voltage
(IF = 25 Adc)
(IF = 50 Adc)
(IF = 100 Adc)

lIdc

VF

-

trr

IRM(rec)

= 250 V)

ton

MJ10041
MJ10044
MJ10047

(11 Pul.e Test: Pul.e width of 300 JLS, duty cycle", 2.0%.

1-563

--

iJ.$

A

.

iJ.$

MJ10041,MJ10044,MJ10047

III'

TYPICAL ELECTRICAL CHARACTERISTICS'
MJ10041

-

FIGURE 1 - DC CURRENT GAIN
400
TJ = 1000~V
z
;;;:

200

/

!E

~ 100

V

/

./

'"

i\

TJ = 25°C'

200

II

,i'...

~

/V

>-

'"~

'"
13

100

v

VCE = 2.0

1\.1\

13
'-'
Q

'-'
Q

i

..- r......

1\ VCE = 1.0 V
,~.

V

to

FIGURE 2 - DC CURRENT GAIN
400

r--,
,...-: f-- ~

/

50

/

.; 50

/

VCE = 5 0 V
II
I

/
20
0,5

1.0

5.0

2.5

10

15

TJ = 25°C
I I I

/
.25

20
0.5

50

Ie. COLLECTOR CURRENT IAMPSI

1.0

2.5
5.0
10
15
IC, COLLECTOR CURRENT IAMPSI

25

50

MJ10044

FIGURE 3 - DC CURRENT GAIN
500

I

-

t-

II

L~ l~o~i

/

Ii!

~

FIGURE 4 - DC CURRENT GAIN
500

I'

/TJ = 25°C

§

TJ 1=

I II

}5O~

\

100

h-

i'

-

l'\.

'\

VeE = 2 0 v

Ii!

B

~C~~ll0V

....-::

~ 200

//

100

'-'
Q

Q

;
50

I

z

~ 200

,I

......

V

z

~

v

VCE = 50

/

.JO
1.0

2.0

3.0

.t

v

5.0
20
3D
10
IC, COLLECTOR CURRENT IAMPSI

SO

\

50

'/

30
10

75 100

\
2.0

30

5.0
20 30
10
IC' COLLECTOR CURRENT IAMPSI

50

75 100

MJ10047

FIGURE 5 - DC CURRENT GAIN

FIGURE 6 - DC CURRENT GAIN

800

800

500

iJ ~ 11~OOC V

~

!z

~

'"
13

;'

200

~

i

/'

500

V

v

r.....
..........
r.....

1-""1-

VrJ = 25°C

~

k:::f-

/'fP'

~ 200

v:

'"
13
'-'
Q

VV

VCE=10V

t'Ni
~. ~
VCE = 2.0 V

\

~ 100
VCE - 5.0 V
I I I

50

I

2.0

- TJ = 25°C

!E'

100

40 /
1.0

-

to

3,0

5.0

50

I

10
25
IC' COLLECTOR CURRENT IAMPSI

50

100

1-564

40 V
1.0

2.0

3,0

5.0
10
25
IC. COLLECTOR CURRENT IAMPSI

50

100

MJ10041.MJ10044.MJ10047

TYPICAL ELECTRICAL CHARACTERISTICS

(continued)

MJ10041

FIGURE 7 - DC CURRENT GAIN
500

.
...,'"
..,
~

....

FIGURE B - COLLECTOR SATURATION VOLTAGE

......

~

.'"

'\

TJ = 25°C

200

~
~

,.'"i:3

\

100

.

~

~
'"

50

...

Q

VCE = 600 V_

1t 20

5.0
1.25

2.5

5.0

10

15

25

[

1.S
14
12

--

1.0

I-- _TJ = 25°C

0.8

TJ = 100°C

~P'

l.J

04

02

o

0.5

125

[

Iclla = 10

::j

8
~

50

18

8 os t""

- -

I II

10

20

1.0

5.0
2.5
10
IC. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

25

50

MJ10044

FIGURE 9 - DC CURRENT GAIN
500

.ffi..

200

a
..,

50

~

20

FIGURE 10 - COLLECTOR SATURATION REGION
20

..........,..

.......

....... ~~ = 25~C

~
'"

\.

.

.~

z

IC'/18 =

1S

~ 14

100

~

Jj

18

~ 12

'"

t:

a:
,;,
~

VCE = 300 V

c

\

10
50
2.5

5.0

10
20 30 50
IC. COLLECTOR CURRENT (AMPS)

100

8
,.~

250

10 I--

TJ = 25°C

08

I--

II

06

I--

04

02

If

-

/

"

.......

TJ = 100°C

'I I II

II

o
1.0

.... v

~O

2.0

3.0

5.0
10
20
30
IC. COLLECTOR CURRENT lAMPS,

50

75 100

MJ10047

FIGURE 11 - DC CURRENT GAIN

FIGURE 12 - COLLECTOR SATURATION REGION

1000

g
'"~

500
z

:ii

200

..............

/TJ =25°C

r...

~

.'",.

~

~

~
'"t;

50

8~

VCE=150V
20
10
5.0

IC/I~ = ~5

!:l

..,a

...
1t

1.8
I.S

« 1.4

~ 100
c

20

,.~
10

25
50
100
IC. COLLECTOR CURRENT (AMPS)

250

500

1-565

12
1.0

I--

TJ = 25°C

I--

TJ=100oC

0.8
0.6
0.4

1.0

IL

II

0.2

o

---"

~

II
2.0

3.0

5.0
10
25
IC. COLLECTOR CURRENT (AMPS)

50

100

MJ10041, MJ10044, MJ10047

TYPICAL ELECTRICAL CHARACTERISTICS

(continued)

MJ10041
FIGURE 13 - BASE·EMITTER SATURATION VOLTAGE

FIGURE 14 - PEAK REVERSE BASE CURRENT

2.4

6

g
t!j

4

.1
I.
IC/IB: 10

t--

~ 2.0

TJ : 25°C ,,;

-

~
~ 1.6

~
i

:: 1.2

...-

f-'

TJ

VI--'

~

0

.

/""

0

TJ = 1DOoC-

o~

~

V

........- f-"'"

f-"'"

....- ,/"

0

f --

... 0.8

Ie = 25A
= 2.5 A
= 25"C

2r---- I-IBI

2.0
0.4
0.5

2.0 3.0
5.0
10
IC. COLLECTOR CURRENT lAMPS)

1.0

25

1.0

50

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VBEloH). BASE.£MmER VOLTAGE IVOLTS)
MJ10044 ___________________________________

FIGURE 16 - BASE·EMITTER SATURATION VOLTAGE
3.0

FIGURE 16 - PEAK REVERSE BASE CURRENT
16

IIII

I-- I-

14

IJ/I~ 1iol

I/-

Ie = SOA
IBI = 1.67 A
TJ = 25"e

f--

/V

2

.,/ V

'l

8

lL

TJ = 25°C

........ i--'j;

,,- V

l -I-" ~

41-

v

b::::::

V

TJ=100oC

I--

0

I

1. 0

1.0

2.0

3.0

5.0
10
25
IC. COLLEcrOR CURRENT lAMPS)

50

2.0

1.0

75 100

3.0

4.0

5.0

6.0

7.0

8.0

VBEloff) BASE·EMlmRVOLTAGE (VOLTS)

MJ10047
FIGURE 17 - BASE·EMITTER SATURATION VOLTAGE
3.0
in

!:i 2.6
0

-

I-

FIGURE 18 - PEAK REVERSE BASE CURRENT
16

I I II
I~/I~! J5'

14

i

~

J

~

'"c

2.2

~

1.8

!

1.4

!:i
0
>

~

~
1.0

--

1.0

f-'

,.....

-

15

'l

i

1--1-

3.0

5.0
10
25
IC. COLLECTOR CURRENT lAMPS)

10

~

6.0

=!.

i--r--'

....-V

= l00A
= 2.75
TJ = 25"C

Ie
riB

a~ 8.0
~4.0

TJ = 100°C

2.0

-

0-

/,V
TJ = 25°C

12

,./'"

L

~

V

/

2.0
50

100

'·566

1.0

2.0

3.0

4.0

5.0

6.0

VBElolf). BASE·EMlmRVOLTAGE (VOLTS)

7.0

8.0

MJ10041,MJ10044,MJ10047

TYPICAL ELECTRICAL CHARACTERISTICS
MJ1~1

(continued)

----------------------------------FIGURE 20 - TYPICAL TURN·ON SWITCHING TIMES

FIGURE 19 - TYPICAL INDUCTIVE SWITCHING TIMES
3.0

5
Ile=50 1A
IBI = 5 0 A
VeEM = 250 V

2f\:C@ll000e

~\

"-

... 0.5
3
~

~

1.0

!

oJ

~ :---

"'

0

Vee = 300 V
IC/IS = 10
RSE=10n
TJ 25°C

1.0

.O~

.0

I

2.0

"' ---

I,.@ oooe
I.v @ !SOe

--=--

~

0.1

Ic @2S;c

r

.0
.0
.0
5.0
.0
7.0
VSE(oH). SASE-EMlmR VOLTAGE (VOLTS)

0.2

005

.......

......

1/

/

'"""

Id

0.03
0.5

8.0

I,

1.0

2.0

3.0

5.0

25

10

50

IC. COLLECTOR CURRENT (AMPS)

MJ1mM4 ---------------------------------FIGURE 22 - TYPICAL TURN·ON SWITCHING TIMES

FIGURE 21 - TYPICAL INDUCTIVE SWITCHING TIMES
20

5.0

~

4.0

\'"

\.

~

"'" "'

o

o

05

............

"
1.0

VCC = 250 V
ICIIB 10
RBE 10 n
TJ 25°C

1.0

1.0

-r--

---

~
~ ............

3

Is.@ 100°C

!:i
;:::
oJ

Is.@ 25°C

.:::::-

I
--..;c

le@25°C

d-

02

.........

01

-

r-...

005

@100 o

1

2.03.040506.07.080
VBE(oH). BASE-EMITTER VOLTAGE (VOLTS)

/

-

I,?

Id

002
1.0

2.0

3.0

;,...;

./

20 30
5.0
10
IC. COLLECTOR CURRENT lAMPS)

50

75 100

MJ1~7-----------------------------------

FIGURE 24 - TYPICAL TURN·ON SWITCHING TIMES

FIGURE 23 - TYPICAL INDUCTIVE SWITCHING TIMES
0

r\" d

.1
I
IC = 200 A _
IBI = 2.5 A
VCEM=100V-

100°

.0

\

.0

~ ~sv@2 ·C

•
.0

~@

f"....:

~ t---

0
0

le@25 0

1.0

2.0

0
5

-

'" '" r--

100°C

0
0

I--

VCC=150V
-ICIIS =25
RBE =10 II
TJ 25°C

"

I,

3

I'-....

2
I"--

3.
8.0 7.0 B.O
4.0 5.0
IS2. REVERSE BASE CURRENT lAMPS)

1

t--

003
1.0

l'

1-567

--

I-"

Id

005
1.0

I'--.

2.0

3.0

10
5.0
25
IC. COLLECTOR CURRENT lAMPS)

50

100

MJ10041,MJ10044,MJ10047

III]

TYPICAL ELECTRICAL CHARACTERISTICS
RGURE 25 - TYPICAL TURN-OFF SWITCHING TIMES
MJ10041

(conlinued)

FIGURE 26 - EMITTER-COLLECTOR DIODE
FORWARD VOLTAGE
5.0

0

r--- Vce = 300 V
.of=: VaEloH) = 5.0 V
r--- Ic/1a=10
TJ = 25°C
2.0

r--

~

V- I--

TJ

~

25'C

MJ1DD47

~ 4.0
w

I,

1/

~
~ 3.0

'f-

V
/

>
c

~

~ 2.0

.5

815 1.0

o. 2

:!f

o.1
0.5

5.0
10
2.5
IC. COLLECTOR CURRENT IA)

1.0

25

50

--

5.0

~ 80

..-

;;; 2.0

,

~ 60

::;40
""
o
'"~

220

0.2

2.5

5.0
10
25
IC. COLLECTOR CURRENT lAMPS)

50

100

RGURE 29 - TYPICAL TURN-OFF SWITCHING TIMES
MJ10047
3.0

Df::::=
~

5f=:

o. 2 ........
I

==
=
-

I I II

I

V~cl= \~oIJ

I!

VaEloH) = 5.0 V
Iclla = 40

><

---

f-

......

./
If

0.0 5
0.0 3
1.0

2.5

5.0
10
25
IC, COLLECTOR CURRENT IA)

50

100

1-568

........

"

Thermal
Derating

'"
z
;::

If

..........

"" ""'-

G

0.3

I.

~

'"o

~

O. 1
1.0

II
II
100

FIGURE 28 - POWER DERATING

100

0.5

I"-- MJ10D41

10

1.0

10

1.0

l-

IF. FORWARD CURRENT lAMP)

30

~

-

MJ1DD44

.- W

,./

(.---

RGURE %1 - TYPICAL TURN-OFF SWITCHING TIMES
MJ10044

.;!,

. . . v.

o

o

40

Second Breakdown

I'....

Derating

-

r----..

i',.

........

'"

..........

......

80
120
TC. CASE TEMPERATURE (OCI

........

160

'" "

200

MJ10041,MJ10044,MJ10047

TABLE 1

-

TEST CONDmONS FOR DYNAMIC PERFORMANCE
_

vaOl•••
200

DRIVER SCHEMATIC

~,

...z

500~

II

I, ,dlustod '0 obtain ..o.,fied Ie

'000

~2

'O,.F

1J

-SOV

PW varied to Attain
125mA

50 {I

~. ~~
500

i;

Vee

+30V

"'!
J
-

y

AdjuatR1

R'

to obtain

""

""

2N3762

I

t

~ ~

La.ll

Vdamp = VCEO(sua)

Vee"" 20V

s

6.0 ....

.

TURN-OFI'TlME

,

r

r

, TUT

e

Input
SeeAbowfor
Detailed

Co~~lon.
2

1N4937

:

0'
Equivalent

I

1

i·':,'P

"::"

le~£Zk=

1

j

l

1-., 'ff-o
~ffi:-

: Reail

t

I

Leo"

v e EVCEM
L:f

Vee

__

RS ==

0.1
• Adjust -

bt

~

Vee

n

Time

.......Vclamp

-L-.

1-'2-J

= 150 to 300 V

Pulse Width '"" 50 "..
Adjust RL for leM

REIIIS1IIIE TEST CIRCUIT

OUTPUT WAVEFORMS
t,Adju.tedto
Obtain Ie

~


I

~ 20

2.0

0.5

125

1.0

5.0
2.5
10
IC.. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

25

50

--------------------______________ MJ10045 __________________________________
FIGURE 9 - DC CURRENT GAIN

FIGURE 10 - COLLECTOR SATURATION REGION
20

50 0

...-;:~ = 25~C

200

~

100

g§

50

15

a'-'

g

" '\

/""

\

\

~

1S

'"

1.2

0

~

1.0

""

0

t; O.S

Vep 150 v
I I

20

IClls = 25

1.S

~ 0.8

~ 0.4

./
TJ = 25°&

f--

TJ=loooe

25
50
100
IC. COLLECTOR CURRENT (AMPS)

250

500

1-579

o

1.0

V

i-"',....

II
II

~ 0.2

10

--

t--

8

:>

10
5.0

1.

0

2.0

3.0

5.0
10
25
IC. COllECTOR CURRENT (AMPS)

50

100

MJ10042,MJ10045,MJ10048

TYPICAL ELECTRICAL CHARACTERISTICS (continued)

--------------------------------MJ10042-------------------------------FIGURE 14 - TYPICAL PEAK REVERSE BASE CURRENT

FIGURE 13 - BASE-EMITTER SATURATION VOLTAGE

5.0

2.4
,--

H~/IB; '10

-

:;

~

TJ ; 25°C .....

r-

r-- r-

....... V
-~;100OC'

IZ

30

~

a'"
~

;i!i

~

1\
2.0 \
\

~

~
0.4
0.5

2.0 3.0
5.0
10
IC. COLLECTOR CURRENT (AMPS)

1.0

I
I
IC; 25 A
IBI ; 2.0 A
VCEM; 300
TJ ; 25°C

~ 4.0

25

1.0

-

\

"

o

o

50

~

v -

10

2.0

3.0

40

5.0

6.0

70

8.0

9.0

10

VBE. BASE·EMITTER RESISTANCE (OHMS)

---------------------------------MJ10045---------------------------------FIGURE 15 - BASE-EMITTER SATURATION VOLTAGE

30

-

'-

FIGURE 16 - TYPICAL PEAK REVERSE BASE CURRENT
5.0

II I
I~/I~ ~ L'

v.:
/.V

2

---

1.0

2.0

3.0

.,'"

2.0

.

~

........Vv

'K

I.

5.0
10
25
IC. COLLECTOR CURRENT (AMPS)

1\
\
\

ffi 1.0

4 1 0 00 C

10

~

3.0

50

o

o

75 100

-

--

I-

TJ = 25°C

4_

--

~

'/

8

I
I
Ic = 50 A
IB = 1.67 A
VCEM; 250 V TJ = 25°C

'"~ 4.0

\

I,

10

20
30 40
50
6.0 7.0
80
VSE. SASE· EMITTER RESISTANCE (OHMS)

90

10

MJ10048 ---------------------------------FIGURE 17 - BASE-EMITTER SATURATION VOLTAGE
3.0

'";;:.

!:i 2.6
c

.'"

r-- I-

5.0

II I
I~/I~! J51

:;

:l:

'"
~

~

1.4

-- -

1.0
1.0

TJ = 25°C

2.0

3.0

'/
,-1--'

I-- i-f-'"

TJ= 100°C

5.0
10
25
IC. COLLECTOR CURRENT (AMPS)

50

'"
;i!i

\
\
2.0 \

j

1.0

i

..I:

c
>

~

'"

A

2.2

'"
I!:!
I::: 1.8

I
I
-IC=100A
lSI; 2.75 A _
VCEM = 150V
TJ = 25°C

~ 4.0

w

!:i

FIGURE 18 - TYPICAL PEAK REVERSE BASE CURRENT

100

1-580

-

--

3.0

\

o
o

'-..1'-4.0
20
60
80
RSE. SASE· EMITTER RESISTANCE (OHMS)

10

MJ10042,MJ10045,MJ10048

TYPICAL ELECTRICAL CHARACTERISTICS (continued)

---------------------------------MJ10042---------------------------------FIGURE 19 - TYPICAL INDUCTIVE SWITCHING TIMES

FIGURE 20 - TYPICAL TURN-ON SWITCHING TIMES

50

3.0

II
40 f -

f~

II

1111111

~

;::
.0

~@25OC

1/

20

V

01

~

-'

0.1

I I

0.05

I

0.2

05
I0
2.0
5.0
10
20
RBE. BASE·EMITTER RESISTANCE (OHMS)

50

"

0.2

le@'25°e

10

o

0.5

w

I I
'e@IOOoe

V

./

.1

~

~

LL

I,

....

/
Id

0.03
0.5

100

I

Vee = 300 V
leliB = 10
RBE=IOn
TJ - 25°C

1.0

~ V

30

I I

2.0

v

1111111
Isv @ 100°C /

Ie = 25 A
VeEM = 250 V
IBI = 2.0 A

1.0

2.0

3.0

5.0

25

10

50

Ie. COLLECTOR CURRENT (AMPS)

---------------------------------MJ10045---------------------------------FIGURE 21 - TYPICALINDUCllVE SWITCHING TIMES
20
1111
18

FIGURE 22 - TYPICAL TURN-ON SWITCHING TIMES
2. 0
Vee = 250 V
V
leliB - 10
1. 0
RBE-IOn
TJ 25°C
O. 5

I Illll J

16 f 14 f ~

~

111111 I
Isv @ 100°C

Ie = 50 A
VeEM = 250 V
IBI = 1.67 A

r--1

12

I,V

Is;@25oe

10

V

;::

8.0

V

6.0

2, .....

1--1"

j..--

I;

.......

~ lo~oe

O. I

4.0

o

oI

02

0.5

I0

20

50

10

I

1-I-""

l'-

0.0 5

I

2.0

V

Id

Ie @ 25°C

c--::-"

'1 III
20
50 100

V

0.0 2
1.0

2.0

RBE. BASE-EMITTER RESISTANCE (OHMS)

3_0
5.0
10
20 30
Ie. COLLECTOR CURRENT (AMPS)

50

75 100

---------------------------------MJ10048----------------------------------

-

FIGURE 23 - TYPICALINDUCllVE SWITCHING TIMES

0

II

I

Isv @ 100°C' II

J-HtT

le=100A
OfVeEM = 150V
f- IBI = 2.75 A

/'

0

/
0

v

V

v

J...

-

FIGURE 24 - TYPICAL TURN-ON SWITCHING TIMES

30
20

Isv @ 25°C

10
0.5

.1

01

If @ 25°C

o

II

01

02

05 10
20
50 10
20
RBE. BASE-EMITTER RESISTANCE (OHMS,

50

I,

t:--"

0_2

.0

20

"

0'3

~

;::

Ie @ 100°C

VCC=150V
ICIIB = 25
RBE=101l
TJ - 25°C

I'-,

t'-

0.03
1.0

1-581

,..-

Id

0.05
100

-

2.0

3.0

10
5.0
25
IC. COLLECTOR CURRENT (AMPS I

50

100

MJ10042,MJ10045,MJ10048

TYPICAL ELECTRICAL CHARACTERISTICS (continued)

FIGURE 26 - TYPICAL TURN-OFF SWITCHING TIMES
MJ10042

FIGURE 26 - EMITTER-COLLECTOR DIODE
FORWARD VOLTAGE

50

1.5

20

.

10

;!

50

:..-

...v

g
0

;;:.

ts

lLl

I 3 ~ r- T~ J2~Jcl

w

'";:3
0

>

~

II

03

tt

2.0

V

0.5
0.5

1.0

2.0

3.0

25

10

5.0

a: 0.9
~

Vee = 300 V
IC/IB = 10
RBE=lon
TJ = 25°C

:!l
0

is 07

I-l -I-"

off
50

0.5
10

2.0

3.0

IC. COLLECTOR CURRENT lAMPS)

5.0

FIGURE 28 -

0

Vts

"'-.......

8

"

6
0

~

VCC = 250 V
IC/IB = 10
RBE=lon
TJ = 25°C

O. 5
O. 2
1.0

1'1111
2.0

3.0

5.0

10

20

30

50

!=

1=
1=
r-

03

0

V

10

v

,/
tt

02

1.0

2.0

3.0

5.0

10

V

VCC=150Vle/lB 25
RBE= Ion TJ = 25°C 1'111
I
50
100

==

0.5

25

'I'
'r:::",

~

.... t-~

20

40

60

80

100

TC. CASE TEMPERATURE 1°C)

ts

20

'"

Second Breakdown
Derating

"-

r-

75 100

10

2,

.........

2

FIGURE 29 - TYPICAL TURN-OFf SWITCHING TIMES
MJ10048
20

>=

100

POWER DERATING

Thermal
Derating

4

IC. COLLECTOR CURRENT lAMPS)

50

50

~

5. 0

I. 0

25

10

IF. FORWARD CURRENT lAMPS)

FIGURE 27 - TYPICAL TURN-OFF SWITCHING TIMES
MJ10046
0
0

IL

.....

~

V

1.0

:g

-

0

>-

L

IC. COLLECTOR CURRENT lAMPS)

1-582

120

"

1'-

14D

160

MJ10042, MJ10045, MJ10048

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
"CEO!susl

RBSOA AND INDUCTIVE SWITCHING
TURN ON TIME

'On

DRIVER SCHEMATIC

j

~,

Fo.,ndUClIVllloadspulsew,dlh
IS adlu51ed IOOblil'.n speCified IC

+30V

200n

~

lOOU

lO!'F

Usov~

+

50H

~~

SOU -

PW varied to Anam

0003

AdlustRl

,F!
01,,*
181 _dIU.ted to

abl.", the fo,ced

"'FE deI!".cjI

.... 2N3762

TUAN-OFF TIME
10011

L---t---<>

'C=125mA

1_ '

Ion
LCD"" 10..,H Vee" 10 V

Vec" 150t0300V
Pulse WIdth = 50 liS

Leo.1 '" 5 0 ~H
Vee'" 20 V

"'cool .. 0 7 n
VCllmp" "eeOhusl

Use inductive _,tch,ng
CI'CIHt •• the ,"pul to
me r....t' .... teltc.rcl.llt

Adjust RL lor

INDUCTIVE TEST CIRCUIT

'eM

,

l

il

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS
tl Adluued to

11

Obte", Ie

Input
S •• Above for

r

lN4931

I
I

1
) Rcoll

o.

I

I L col '

D'I"ledcond~tlon'
V,
_
c~p_
-_
2

l
Lco'IIICMl

l J

EqUIvalent

'2'--Vc1emp

v CC

Ten EqUipment

~

RS'"

5q)pe - Tektrontx
475 or Equn,.lent

01n

"Adjust -

V such that VSE(off):: 50 V except as reqUired for ABSOA

SWITCHING TIMES NOTE
In reSistive sWitching Circuits, (lse, fall, and storage
tImes have been defIned and apply to both current and
voltage waveforms since they are In phase. However,
for ,nduct,ve loads whIch are common to SWITCH MODE
power suppl/es and motor controls, current and voltage
waveforms are not in phase Therefore, separate measurements must be made on each waveform to determine
the total SWItching tIme. For thIs reason, the follOWing
new terms have been defined.

IS shown In Figure 3010 aId on the VIsual Idenllty of
these terms.
For the deSIgner, there IS mInImal sw,tch,ng loss
dUring storage time and the predomInant SWItching
power losses occur dUring the crossover interval and can
be obtaIned uSing the standard equatIon from AN-222A.
PSWT = 112 VCCICltclf
In general, trv + tfl = tc. However, at lower test currents
this relationshIp may not be valId.
As IS common with most switching transistors, resistive
SWItching is speCIfied at 25°C and has become a benchmark for designers. However, for deSIgners of hIgh
frequency converter CirCUits, the user-oriented speCificatIons whIch make this a "SWITCHMODE" transistor are
the inductIve SWItching speeds Itc and t sv ) whIch are
guaranteed at 100°C.

tsv = Voltage Storage Time, 90% IBI to 10 % VCEM
trv = Voltage RIse TIme, 10-90% VCEM
tfl = Current Fall Time, 90-10% ICM
ttl = Current Tall. 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portIon of the Inductive SWItchIng waveform
FIGURE 30 -

INDUCTIVE SWITCHING MEASUREMENTS

IC~

.....-1/
/""

-

'e/"

VCEM

'"J

90% YCEM

.....

/
10% YCEM

.-

Plpkl

90% 'CM

---, '-lc~ I-

VeE

'S-

Vclamp

I"fj~lf'-r-l,,-

t--tsv

90% 'SI

-- --\- -- -- -- -...........

-

~

FIGURE 31 - THERMAL RESPONSE
0=05

I'

1Q% .........

ICM

-

;
u

o. 1 0

0.1

0- 0 03
Single Pulse

;a'

~~

'"
....

~ 0.0 I§:'

isu;
~

~

1-583

Duty Cycle, 0 - IJ 112

R6JCIII rill R6JC
R6JC - 0.5 °C/W Max
D Curves Apply for Power Pulse Tram Shown

z

TIME

E

T::[}Jl
~t""

0.01

Read Time @ 11
TJlpkl - TC = Plpk) R6JCIII
0.1
1.0
10
t TIME Im.1

100

1000

MJ10042, MJ10045, MJ10048

SAFE OPERATING AREA INFORMATION

----------------------------------MJ10042---------------------------------FIGURE 33 - MAXIMUM RATED REVERSE-BIAS
SAFE OPERATING AREA (RBSOA)

FIGURE 32 - MAXIMUM RATED FORWARD-BIAS
SAFE OPERATING AREA (FBSOA)
75
lOI'S
.~
Turn-On SWitching)

-

...:;;

in

5-

...
'"

0

-z

Ii!
a:
:::>

de

'"
:5

60

IB

45

T} 1€i 10JOC
f--RBE=1011_

f---

a:

o

t;

1.0

~

S
.9

~

~

0

...~

15

s
O.l~.

Current limit

..

E--- -Thermal Limit @ TC = 25°C

.

(Single Pulse)
Second Breakdown Limit
10
100

0.01
1.0

1000

\..

o

10.000

o

100

VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)

:-- "'900 1000

500
VCE. PEAK COLLECTOR·EMmER VOLTAGE (VOLTS)

----------------------------------MJ10045---------------------------------FIGURE 36 - MAXIMUM RATED REVERSE-BIAS
SAFE OPERATING AREA (RBSOA)

FIGURE 34 - MAXIMUM RATED FORWARD-BIAS
SAFE OPERATING AREA (FBSOA)
150
lOl's
(Turn·On Switching!

ie

I
I

'"~

5-

~ 100

I

125

TJ';; 100°C

--

i

'"

~

de

a:

o

t;

~

~

S
E 1.01:--

S

~

(Smgle Pulse)

0.1
1.0

~

Second Breakdown limit
2.0

5.0

10

t

75

1

0

""

Current limit

~-- - Thermal Limit @ TC - 25°C

50

20

300 500

1 JU

\

5

o
o

100

f--- ~
f--- ~

\

:::>

B

RBE=1011

\

15
lli 100

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

100

200

-

\

400

300

500

600

VCE. PEAK COLLECTOR·EMITIER VOLTAGE (VOLTS)

----------------------------------MJ10048~i---------------------------------FIGURE 36 - MAXIMUM RATED FORWARD-BIAS
SAFE OPERATING AREA (FBSOA)

ie

:;;

FIGURE 37 - MAXIMUM RATED REVERSE-BIAS
SAFE OPERATING AREA (RBSOA)
300

lOl's
Turn-On Switchin )

100

~
5-

5-

!iii:

g§

0

a:
o

B
~

1.0

~

..""

§-- Current limit

S

f::

~

~-- -Th ..mal Limit@Tc=25°C

(Single Pulse)
.1~Second Braalrdown Limit
0.0

0.1

1.0

~
10

\

200

\

B
~ 150

de

100

1000

VCE. COLLECrDR-EMITTER VOLTAGE (VOLTS)

\
\

100

\

l'\.

0

o
o

I I
~ 10~OC-

'-TJ
RBE= 1011_ r--

\

!iii:

iii

B

E
:::::I

250

.........
100

200

VCE. PEAK COLLECTOR·EMITIER VOLTAGE (VOLTS)

1-584

300

MJ10042,MJ10045,MJ10048

III

OVERLOAD CHARACTERISTICS
----------------------------------MJ10042--------------------------------FIGURE 38 - OVERLOAD SAFE OPERATING AREA
TYPE I (OlSOA)
125

~

:;;

r- T~ = 25!C

100

~

i
~
8

50

'"

5. 0

1\\\

\\\

\\'

~

!
~
a

V

~

75

FIGURE 39 - OVERLOAD SAFE OPERATING AREA
TYPE II (OlSOA)

I-

\\

\\\

I/'P = 501"

\\'(

'P - 10 1"

\'\ /

1d> 25

o

o

200

3.0

2.0

'"
;Ii

'p =20 1"_

~ /1
~

T~ = 251C _ r--

40

1

~

So

r--

/

r--'P = 20 1"

I

I

o
850

500

'p = 5.0 1"

1.0

o

1000

VCE. COLLECTOR-EMITIER VOLTAGE )VOLTS)

I

I

1 - ~ ::,....

200

500

850

1000

Vcr. COLLECTOR-EMIlTfII VOLTAGE )VOLTS)

- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - MJ10045---------------------------------FIGURE 41 - OVERLOAD SAFE OPERATING AREA
FIGURE 40 - OVERLOAD SAFE OPERATING AREA
TYPE II (OlSOA)
TYPE I (OlSOA)
250

~

:;;

5.0

-

200

TC=~5OC

~

~

I
'"
00

~
8

4.0

r--

Jc=125oC

:;;

~

~

150

~

ia

\. i-' 'P = 5.0 1"1
~

100

'\'~

tp :::: 10

~
....... ~

1d> 50

o

o

100

200

~

pS

2.0

;Ii

'p= 2O I " _

1

1

400

450

~

300

3.0

So

'P = 5.0 1"

1\

1.0
'p = 20
')

100

500

VCE. COLLECTOR-EMITTER VOLTAGE )VOLTS)

I

1',--- \'<..
)

200

"'

~

300

400

450

500

VCE. COLLECTOR-EMITIER VOLTAGE (VOLTS)

--------------------------------MJ10048-------------------------------FIGURE 42 - OVERLOAD SAFE OPERATING AREA
TYPE I (OlSOA)

FIGURE 43 - OVERLOAD SAFE OPERATING AREA
TYPE II (OlSOA)
5.0

500
250C
~ 400 r-- TC = 1

!

5 300
~

~

a
~

,

in

::l

~

'p = 50!"

)

1d> 100

~

3.0

i

2.0

~

...-'p -101"

.I_
I~ "'p- 20 1 " _
~ K"'I
1

8

100

TC =125oC

200

V'p =5.0I"- -

;Ii

So

1.0
'p= 2O I " -

o
o

o

o

r--

~

\~ V
'\ ~

200

4.0

250

VCE. COLLECTOR·EMITTER VOLTAGE )VOLTS)

'1

1
100

~

~
200

VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

1-585

250

MJ10042, MJ10045, MJ10048

III
SAFE OPERATING AREA INFORMATION

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figures 32, 34 and 36 are based on TC =
25°C; TJ(pk) isvariabledepending on power level. Second
breakdown pulse limits are valid fordutycycles to 10% but
must be derated when TC ;;. 25°C. Second breakdown
limitations do not derate the same as thermal limitations.
Allowable current atthe voltages shown on these figures
may be found at a ny case temperature by using the appropriate curve on Figure 28.
TJ(pk) may be calculated from the data in Figure 31.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current
mustbe sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse-biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse-Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse-biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figures
33, 35 and 37 give the RBSOA characteristics.
OVERLOAD SAFE OPERATING AREA
The forward-bias safe operating area (FBSOA)specification given in these figures adequately describes transistor
capabilityfor normal repetitive operation. When shortcircuit or fa ult conditions occu r, these tra nsistor specifications
are not always adequate. A specification called overload
safe operating area (0 LSOA) has been developed to describe
the transistor's ability to survive under fault conditions.
OLSOA is specified under two types of conditions.
TYPE I OLSOA
-Type I OLSOAapplieswhen maximum collector current
is limited and known. Agood example isa circuit where an
inductor is inserted between the transistor and the bus,
which limits the rate of rise of collectorcurrentto a known
value. If the transistor is then turned off within a specified
amount of time, the magnitude of collector current is also
known. Figures 38, 40 and 42 depict the Type I OLSOA
rating for these devices. Maximum allowable collector-

emitter voltage versus collector current is plotted for
several pulse widths. (Pulse width is defined as the time
lag between the fault condition and the removal of base
drive.) Storage time of the transistor has been factored
into the curve. Therefore, with bus voltage and maximum
collector current known, these figures define the maximum time which can be allowed for fault detection and
shutdown of base drive.
Type I OLSOA is measured in a common-base circuit
(Figure 44) which allows precise definition of collectoremitter voltage and collector current. This is the same
circuitthat is used to measure forward-bias safe operating
area.
TYPE II OLSOA
Type II OLSOAapplies when maximum collector current
is not limited by circuit design, but is limited only by the
gain of the transistor. Therefore, collector current does not
appear on the Type II OlSOA curve. This curve defines a
safe region of operation from the information that is usually
available to the designer.
This information is normally base drive, bus voltage and
time. In termsofthe OlSOAcurve, bus voltage is assumed
to be worst-case collector-emitter voltage, and time is
defined to be the same pulse width that was described for
Type I OlSOA. USing these variables, maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus
determined by the circuit parameters. Type II OLSOA, as
shown in Figures 39, 41 and 43 are measured in the circuit shown in Figure 45, and measurement is made as
follows: Base current is applied while the collector is
open, allowing a highly overdriven saturated condition.
Next, a stiff voltage source is applied to the collector. The
rising voltage at the collector of the transistor triggers a
delay function. At the end of this delay, base drive is
removed. The delay time is the variable on the Type II
OlSOAcurve. The storage time of the transistor is thereby
factored into the rating.
There are several additional aspects to be considered
regarding OlSOA. The first consideration is that OlSOA is
strictly a NON-REPETITIVE rating. It is intended to describe
the survivabilityofthe transistor during an accidental overload and is not intended to describe a stress level which
can be sustained indefinitely. The number of nonrepetitive
faults for which OlSOA isdefined for these devices is 100
occurrences. Another factor is the form of turn-off bias.
For these devices, turn-off bias has relatively little effect
on its OlSOA capability. This observation is valid from
IB2 = 0 (soft) to VBE(off) = 5 V (stiff).
OlSOA is subject to the sa me derating with temperature
as normal FBSOA. The second breakdown derating curve is
applied tothe allowable cur~ent at any given voltage, using
the same procedure that is followed with pulsed FBSOA.

1-586

MJI00S0

®

MOTOROLA

Designer's Data Sheet
50 AMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTOR

50 KVA SWITCH MODE TRANSISTOFt
50-Ampere Operating Current

850 VOLTS
500 WATTS

The MJ10050 Darlington transistor is designed for industrial
service under practical operating environments found in switching
high power inductive loads off 460-Volt lines.

Designer"s Data for
"Worst-Case" Conditions
The Designer's Data Sheet permits
the design of most circuits entirely from
the information presented. Limit datarepresenting device characteristics
boundaries-are given to facilitate
"worst-case" deSign.

w

..,t Number 14ASB123B7B001.
0.006" thick. Motorola Part Number 14ASB12387B002.
Notes:
1. A BelleVille washer of 0 472"0.0 .• 0.205"1.0,0 024"thlckand 150poundsflatls
recommended.
2. The lead torque should be limitedto20 In.-Ib, unsupported to prevent rotation of the
terminal mthe package. Thetorque may be Increasedto50 In -Ib If support IS used to
prevent rotation The maximum penetration of the screw should be limIted to 0 7S
H

1-588

t
t=:=:f-!

,

MILLIMETERS
OIM MIN MAX
A 53.09 53.84
B 55.37 56.39
26. 7
C
0
6.10
6.60
7.11
E
6.60
F
0.71
0.81
G
43.31 BSe
H 12.57 12.82
J
1.52
1.62
K
9.50
9.75
L 10.21 10,46
M 18.92 19.18
N
23.67 23.93
5.21
P
5.08
0
3.53
3.78
R
6.76
7.26
S 14.73 15.24
V
5.33
5.84
W
6.40
6.65
X
7.37
7.87

INCHES
MIN MAX
2.090 2.120
2.180 2.220
1.050

If
0.280
0.032
BSe
I 0.505
I 0.064
I 0.384
I 0.412
I 0.755
I 0.942

~:~~~

0.139 I
0.266 0.286
0.580 0.600
0.210 0.230
0.252 0.262
0.290 0.310

CASE 346-01

MJ10050

ID

MAXIMUM RATINGS (Continued)

Electrical Ratings
Rating

Symbol

Value

Unit

VCEO

850

Vdc

VCER

900

Vdc

Collector-Base Voltage

VCB

900

Vdc

Emitter-Base Voltage

VEB

8.0

Vdc

IC

50
75
150
250

A

IB

50
100

A

PD

500
4.0
667

Watts
W/oC
Watts

TJ, Tstg

-55 to +150
-55 to 200

°c

Collector-Emitter Voltage
Collector-Emitter Voltage (RBE

Collector Current Base Current -

=10 Ohms)
=

Operating, TC 125°C
Continuous. TC = 25°C
Peak Repetitive, TC 25°C
Peak Nonrepetitive, TC 25°C

=

=

Continuous
Peak Nonrepetitive

Total Device Dissipation @ TC - 25°C
Derate above 25°C

For '-minute overload
Operating Junction and Storage Temperature Range
For l-minute overload

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC 250 mAde, IB 0)

=

VCEO(sus)

=

Collector Cutoff Current
(VCE 900 Vdc, VBE(off)
(VCE 900 Vdc, VBE(off)

=
=

Collector Cutoff Current
(VCE 900 Vdc, RBE 10 n, TC

=

ICEV

=1.5 Vdc)
=1.5 Vdc, TC =150°C)

=

=100°C)

Emitter Cutoff Current
(VEB 4.0 Vde, IC 0)

=

=

850

-

-

-

-

Vdc
mAde

-

ICER

-

2.0
10

-

10

mAde

lEBO

-

-

650

mAde

SAFE OPERATING AREA
Second Breakdown Collector Current with Base Forward-Biased

FBSOA

See Figure 13

Clamped Inductive SOA with Base Reverse-Biased

RBSOA

See Figure 14

Overload SOA

OLSOA

See Figures 16 and 17

ON CHARACTERISTICS (1)
DC Current Gain
(IC 50 Adc, VCE 5.0 Vdc)
(IC - 50 A, VCE- 10V)

=

hFE

=

Collector-Emitter Saturation Voltage
(IC 50 A, IB 4.0 A)
(lc 75 Ade, IB - 15 A)
(IC 50 Ade, IB - 4.0 A, TC - 100°C)

VCE(sat)

Base-Emitter Saturation Voltage
(IC - 50 Adc, IB - 4.0 Ade)
(IC - 50 Ade, IB - 4.0 Adc, TC - 100°C)

YaE(sat)

=
=
=

=

./

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB 10 Vdc, IE 0, 'test

=

=

=1.0 kHz)

(1) Pulse Test. Pulse width of 300 !-,s, duty cycle E;;;2.0%.

1-589

35
40

-

-

-

-

-

2.0
5.0
2.5

-

-

3.0
3.0

Vde

Vde

-

-

MJ10050

ELECTRICAL CHARACTERISTICS (Continued) (TC: 25°C unless otherwise noted)

OJ

Characteristic
SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
FaU Time

(VCC: 300 Vdc. IC: 50 A. IBl : 4.0 A.
RBE : 10 n. tp: 50 p.S.
Duty Cycle';; 2.0%)

td
tr
ts
tf

-

tsv
tc
t,v
tc

-

-

-

0.03
1.2
35
8.5

0.25
5.0
100
35

P.s

50
20
35
10

150
60
100
35

P.s
P.s
P.s
P.s

-

250

W

1.0

1.2

1.5
2.0

V
V

4.0

12

P.s

0.3

1.2

p'S

-

500

A

p.S

P.s
p'S

Inductive Load, Clamped
Storage Time
Crossover Time
Storage Time
Crossover Time

(lCM: 50A.
VCEM: 300 V. RBE: 10 n.
IBl :4.0A)

TJ: 100°C
TJ.: 25°C

C-E DIODE CHARACTERISTICS
Power Dissipation (lB: 0)

Po

Forward Voltage (1) (IF: 50 A)
(IF: looA)

VF

Reverse Recovery Time
(di/dt: 25 AI p.s. IF: 50 A)
Forward Turn-On Time
(Compliance Voltage: 50 V. IF: 50 A)

trr
ton

Single Cycle Surge Current (60 Hz)

-

IFSM

(1) Pulse Test. Pulse width of 300 f.ls, duty cycle ~2 0%.

TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 -

DC CURRENT GAIN

V

TJ: 1000~V
z

FIGURE 2 - DC CURRENT GAIN

I-- -... t-...

400

200

400

./

-N

....'"

/

iii 100

"'

/

~

V

2!

'"

1\

TJ: 25°C

200

i13

V

c

w
.J? 50
VCE: 5.0 V

I

20
1.0

2.0

5.0

10

I

/
TJ: 25°C

/

I

20

50

20
1.0

100

i

FIGURE 3 - DC CURRENT GAIN

z

100

in

~ 25~C

20

50

10C

V

20

!::i 1.8
c

"\

~

I

I

IC/IB: 10

1.6

~ 14

\

c

;:; 12

~
::i

50

~

;

10

FIGURE 4 - COLLECTOR SATURATION VOLTAGE

..l--"
TJ

5.0

IC. COLLECTOR CURRENT lAMPS)

500

200

I I

20

IC. COLLECTOR CURRENT lAMPS)

I13

1\ !I\

100

c

V

50

V

;;;C

VCE: 2.0 V

'-'

'-'

....'"

~

;;;C

"'
13

;

H

t'-....

VCE: lOV

/

;;;C

f--

VCE: 600 V_

20

l -I -

0.8

!rl

0.6

8

0.4

w

~

5.0

10

20

50

100

250

IC. COLLECTOR CURRENT (AMPS)

I---: -;:::.

J-- _.TJ: 25°C

:::l

10
5.0
2.5

1.0

~

TJ: 100°C

0.2

o

1.0

2.0

5.0

10

20

IC. COLLECTOR CURRENT (AMPS)

1-590

iJ

50

100

MJ10050

TYPICAL ELECTRICAL CHARACTERISTICS (continued)
fiGURE 6 - EMITTER-COLLECTOR DIODE
fORWARD VOLTAGE

fiGURE 5 - BASE-EMITTER SATURATION VOLTAGE

2.4

1.5

.1.

-

~

1_

ICIIB= 10

0

~
w

V . . . ""

TJ = 25O~

'"

~

1.3

~ 0.9
~

C

0.7

:!if
0.4
1.0

2.0

5.0
10
20
IC. COLLECTOR CURRENT (AMPS)

50

-

--

0.5
20

100

- --

1.1

'"
~
0

II I
r- T~ J2~lcl

50

/'

L

100

10
20
50
If. fORWARD CURRENT lAMPS)

200

TYPICAL SWITCHING CHARACTERISTICS
fiGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

50

IC",_

......- VI

...........

-

,C/

VCEM

90% VCEM

i

~

..:0

1--1 r-Ie~ t-

VCE

-

40 r -

1\90% ICM

Irv~~tfl- 1- 1 , _

f---I",

100VCEM
90% lSI

:ri;::

I'\.

---

10% ......
ICM

"""""

1 0.5

01

0.1

......
..........

0.05
0.03
1.0

I I

le@ 100°C
Ie @ 25°C

II

0.5 1 0
2.0
50
10
20
RBE. SASE-EMITTER RESISTANCE 10HMS)

02

50

100

FIGURE 10 - TYPICAL TURN-OFf SWITCHING TIMES

50

..v-

20
10

It

........

..:0
~ 5.0

V

;::

IIV

/

-

Is

./

2.0

:/

10

Id

2.0

V
V

II

TIME

~

;:: 0.2
oJ

20

o

Vec = 300 V
ICIIB - 10
RBP 10 n
TJ - 25°C

1.0

.fII V
~sv @25°C

30

10

II

2.0

V

Isv @ 100°C /

./
V

fiGURE 9 - TYPICAL TURN-ON SWITCHING TIMES

3.0

IC· 50 A
VCEM = 250 V
IBI = 4.0 A

~~

--- -- -- -

- --\- --

II IIII
II IIII

II II

Vclamp

'"

i'4

V
'S-

FIGURE 8 - TYPICAL INDUCTIVE SWITCHING TIMES

5.0
10
20
IC. COLLECTOR CURRENT lAMPS)

50

100

1-591

0.5
1.0

20.

VCC = 300 V
IC/IS = 10
RSE= Ion
TJ = 25°C

5.0
10
20
Ic. COLLECTOR CURRENT lAMPS)

50

100

MJ10060

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
velOI_1

>on

1

DRIVER SCHEMATIC

. ::TL

~,

i!-§

For Inductive loed, pul.. WIdth

TURN ON TIME

:fr 4~ ~2N378:
I

'oon

1I

-sov

M V.rl..:! to Analn
'e·,00mA

50n

,g.O'f'

Y

....,'" '.'

~

$;
u>

,

Leoll" 5.0l'H
-:-

Vee· 20 V

Vclamp • VCEOCtu,J

INDUCTIVE TEST CIRCUIT

...5
.."..

~.

u
U

I
I
I

IN''937

Input

See Above for

Detailed ConditIons
2

or

Equ"iv.en1
VclamP.

* b~s·}
0.1

.

Acotl

I
I LCOlt

S

"L
'~
~ ~Vee

~

Leolll'eM)

____ ---1-,
~b~
T.ma

AL=80n

'2---Vcl.mP

~

"CEM

n

AdJust- V such that VBE(offl

'-cOlltlCM)

"---vee-

"t-

vCE

Vee

Vee" 300 V

RESISTIVE TEST CIRCUIT

__
11 ~Iamped

'eM

TURN-OFF TIME
Use uiductlVe SWitching
CircUit as the Input to
the resistive test CirCUit

Pulle Wldch: 26,.,.

'1 Adju.Mdto
Obtain Ie

'CL0=
1--,,-

L J

y 3

r

OUTPUT WAVEFORMS

i

r

1

181 adjusted to
obtain the forced
hFE deSired

MTM1224

I-

,on
'-cOil· 10 mli Vee. 10 v
"COi'. 0 7 n

I.~:

.30Y
AdJust AI
toobt• .n

I
~OOO5
- -:- r ~ ~

'OOn

0003

.,

200n

o,,~

.......... 'o..,,,' ..,,··... 'c

~'

....
aiS

RESISTIVE
SWITCHING

RBSOA AND INDUCTIVE SWITCHING

Test EqUipment
Scope - TektronIx
475 or EqUIvalent

"clamp

l-12-t

5 V except as requIred for RBSOA (FIgure 141 •

SWITCHING TIMES NOTE
is shown in Figure 7 to aid on the visual identity of
these terms.
For the designer. there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 Vcclc(tclf
In general. trv + tfi "" tc. However. at lower test currents
this relationship may not be valid.
As is common with most switching transistors. resistive
switching is specified at 25°C and has become a benchmark for designers. However. for designers of high
frequency converter circuits. the user-oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and ts v ) which are
guaranteed at 100°C.

In resistive switching circuits. rise. fall. and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However.
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers. current and voltage
waveforms are not in phase. Therefore. separate measurements must be made on each waveform to determine
the total switching time. For this reason. the following
new terms have been defined.
ts v = Voltage Storage Time. 90% IBI to 10 % VCEM
trv = Voltage Rise Time. 10-90% VCEM
tfi = Current Fall Time. 90-10% ICM
tti = Current Tail. 10-2% ICM
tc = Crossover Time. 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform

FIGURE 12 - THERMAL RESPONSE

FIGURE 11 - TYPICAL PEAK REVERSE BASE CURRENT

1.0

10
9.0
IC!50A 1 _
lSI =4.0 A
VCEM = 300 VTJ = 25°C

~ 8.0

I

Ia
i

i

!p

7.0

0.2

--

6.0

1\
\
4.0

0.5

-

5.0

3.0
2.0
1.0

o
o

,

.~

"'

1.0

2.0 3.0 4.0 5.0 6.0 7.0 8.0
VSE. BASE·EMITTER RESISTANCE (OHMSI

9.0

10

1-592

D = 0.5
D= 0.2

MJ10050

The Safe Operating Area figures shown in Figures 13 and 14
are specified for these devices under the test conditions shown.

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TC ; 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermallimitati.ons. Allowable
current at the voltages shown on Figure 13 may be found
at any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 12.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 13 - MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA (FBSOA)

~
::;;
~

100
50

10SWltchmgj
'"'
(Turn-On

20
10

~ 5.0

de

ll§

S 2.0

:s

1.0

f;j

0.5

B

02

~

~

r

.!i> 0 1 ~

Current limit
-----Thermallimlt@,Tc-250C

ISingl. Pulsel

0.05 ~

Second Breakdown LllllIt

0.02

0.01~.0

5.0

2.0

20

10

50

100

200

500 850

VCE. COLLECTOR·EMITIER VOLTAGE IVOLTSI

REVERSE BIAS
For inductive loads. high voltage and high current
must be sustained simultaneously during turn-off. in most
cases. with the base to emitter junction reverse-biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This ca~ be accomplished by several means such
as active clamping. RC snubbing. load line shaping. etc.
The safe level for these devices is specified as Reverse-Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse-biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 14
gives the RBSOA characteristics.

FIGURE 14 - MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA (RBSOA)
150

in

~

...

~

120

'"
f;j

~=>

90

:::l

60

'"
""~

30

I,;:

-

T
10JOC
J"
RBE;10n _

'"0
0

::i;
.!='

o
o

"100

OVERLOAD SAFE OPERATING AREA

I"--

500

900

1000

VeE. PEAK COLLECTOR·EMITTER VOLTAGE IVOLTSI

FIGURE 15 100

0

0

POWER DERATING

~ t-....

r----..

"" '"

.......

Thermal~

Derating

t--..

Second Breakdown
DeratlRg

f'-...

f'...

0

"'

0

0
40

80

120

Te. CASE TEMPERATU RE lOCI

TYPE I OlSOA

-

. . . . 1'---.

r--.....

1'-.

'"
160

"

The forward-bias safe operating area (FBSOA) specification given in Figure 13 adequately describes transistor
capability for normal repetitive operation. When short circuit or fault conditions occur. these transistor specifications
are not always adequate. A specification called overload
safe operating area (OLSOA) has been developed to describe
the transistor's ability to survive under fault conditions.
OLSOA is specified under two types of conditions.

"'"

200

Type I OLSOA applies when maximum collector current
is limited and known. Agood example is a circuit where an
inductor is inserted between the transistor and the buS.
which limits the rate of rise of collector current to a known
value. lithe transistor is then turned off within a specified
amount oftime:the magnitude of collector current is also
known. Figure 16 depicts the Type I OLSOA rating for the
MJ 10050. Maximum allowable collector-emitter voltage
versus collector current is plotted for several pulse widths.
(Pulse width is defined as the time lag between the fault
condition and the removal of base drive.) Storage time of
the transistor has been factored into the curve. Therefore.
with bus voltage and maximum collector current known.
(continued on back page)

1-593

III

MJ10050

III

OVERLOAD CHARACTERISTICS
FIGURE 16 - OVERLOAD SAFE OPERATING AREA
TYPE I IOLSOA)

250

r- T~ = 25 lC

c;;-

"- 200

::IE

:!.

....

10

\\\

9.0

! \\\

\\,

c;;"-

....z~

\\

15
0: 150

\\\

0:

a

\\\

0:

13

FIGURE 17 - OVERLOAD SAFE OPERATING AREA
TYPE IIIOLSOA)

100

\W

:!c

...

\~

~ 50

!!1

/'p=5.0 ll'

a
~

tp = 10 II'

o

200
500
850
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)

FIGURE 18 - OVERLOAD SOA TEST
TYPE I

7.0
6.0
5.0
4.0

'" 3.0
::Ii

/
tp=20 IIs_
&.. / i I

$

tp = 5.0 liS

2.0

"I
1 - ~ ~-L

1.0 _tp=20 liS

~~

o

T~=25JC- ~

8.0

o
o

1000

I

I

200
500
850
veE. COLLECTOR·EMITTER VOLTAGE IVOLTS)

1000

~IRCUIT

Not.s:

• VCE = Vcc + VBE

FIGURE 19 - OVEflLOAD SOA TEST CIRCUIT
TYPE II

• Adjust pulsed current source

for desired IC. tp

rMM~~Y~~v---------l

I

IL

N.O.

I

N.C.

______ JI
Vcc

Notes:

+6V

• Rep Rate .. 10 Hz
• Adjust Rl for desired 18
• Pulse delay time at the

3.9

50

generator determines pulse
width at the device under test

15

1-S14

I

MJ10050

SAFE OPERATING AREA INFORMATION (continued)
TYPE I OLSOA (continued)
Figure 16 defines the maximum time which can be allowed
for fault detection and shutdown of base drive.
Type I OlSOA is measured in a common-base circuit
(Figure 18) which allows precise definition of collectoremitter voltage and collector current. This is the same
circuit that is used to measure forward-bias safe operating
area.

TYPE II OLSOA
Type II OlSOAapplies when maximum collector current
is not limited by circuit design, but is limited only by the
gain ofthetransistor. Therefore, collector current does not
appear on the Type II OlSOA curve. This curve defines a
safe region of operation from the information that is usually
available to the deSigner.
This information is normally base drive, bus voltage and
time. In terms ofthe OlSOAcurve. bus voltage is assumed
to be worst-case collector-emitter voltage, and time is
defined to be the same pulse width that was described for
Type I OlSOA. Using these variables, maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus
determined by the circuit parameters. Type II OlSOA. as

1-595

shown in Figure 17, is measured in the circuit shown in
Figure 19, and measurement is made as follows: Base
current is applied while the collector is open, allowing a
highlyoverdriven saturated condition. Next, a stiff voltage
source is applied tothe collector. The rising voltage at the
collector of the transistor triggers a delay function. At the
end of this delay, base drive is removed. The delay time is
the variable on the Type II OlSOAcurve. The storage time
of the transistor is thereby factored into the rating.
There are several additional aspects to be considered
regarding OlSOA. The first consideration is that OlSOA is
strictly a NON REPETITIVE rating. It is intended to describe
the survivability of the transistor during an accidental overload and is not intended to describe a stress level which
can be sustained indefinitely. The number of nonrepetitive
faults for which OlSOA is defined for the MJ10050 is
100 occurrences. Another factor is the form of turn-off
bias. For the MJ10050, turn-off bias has relatively little
effect on its OlSOA capability. This observation is valid
from IB2 0 (soft) to VBE(off) 5 V (stiff).
OlSOA is subject to the same derating with temperature
as normal'FBSOA. The second breakdown derating curve is
applied to the allowable current at any given voltage, using
the same procedure that is followed with pulsed FBSOA.

=

=

MJIOOSI
MJIOOS2

®

MOTOROLA

Designer's Data Sheet
50 AMPERE

50 KVA HIGH SPEED SWITCH MODE TRANSISTOR
50-Ampere Operating Current

NPNSILICON
POWER DARLINGTON
TRANSISTOR

The MJ10051 Qarlington transistor is designed for industrial
service under practical operating er)yironments requiring fast
switching speed for highly efficient systems operating at high
frequency such as inverters, PWM controllers a nd other high
frequency system operating from 460 V lines.

750 .nd a60 VOLTS
500 WATTS

Designer', Data for
"Worst C..... Conditions
The Designer's Data Sheet permits the design
of most circuits entirely from the informa,ion
presented. Limit curves - representing boundaries on device characteristics - are given to
facilitate "worst case" design:

~

.,

V~A
1/4-2DUNC28

t
F

i

J
~::::=-l

m ~_---'---~

s

•

=25=4.00

*Emitter-Collector Diode is a fast recovery. high power diode.

MAXIMUM RATINGS

STYLE 1:
PIN 1. BASE
2. EMITTER
3. EMITTER
4. CO LLECTO R
5. COLLECTOR

NOTES:
1. DIMENSION A AND B ARE DATUMS.
2. [I]IS SEATING PLANE.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLES:
1"'1.0.36 (0.0141@ITiA@IB@1

4. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5, 1973.

MECHANICAL RATINGS
Rating
Mounting Torque (To heat sink with 10·32 Screw)
(Note 1)

Value

Unit

20

in.-Ib
DIM
A

Lead Torque (Lead to bus with 1/4-20 Screw)
(Note 2)

20

Per Unit Weight

in.-Ib

120

1

0.25

1

B
C
D

grams

E
F
G

°C/W

H

THERMAL CHARACTERISTICS
Thermal Resista nce, Junction to Case,ROJC

f

J
K

Mica Insulators available as separate items.
0.003" thick. Motorola Part Number 8123878001.
0.006" thick. Motorola Part Number 8123878002.

Notes:
1. A Belleville washer of 0.472" 0.0., 0.205" 1.0 .. 0.024" thick and 150 pounds flat IS
recommended such as PIN AM125206 available from National Disc Spring Div .•
385 Hillside Ave .. Hillside N.J. 07205.
2. The lead torque should be limited to 20 in.-Ib, unsupported to prevent rotation of the terminal
in the package. The torque may be Increased to 50 in.-Ib if support is used to prevent
rotation. The maximum penetration of the screw should be limited to 0.75".

1-596

L
M
N
P
Q

R
S
V

W
X

MILLIMETERS
MIN MAX
Sl.09 Sl.84
55.37 56.39
2!i.67
6.10
6.60
7.11
6.60
0.71
0.81
43.31 BSC
12.57 12.82
1.52
1.62
9.50
9.75
10.21 10.46
18.92 19.18
23.67 23.93
5.08
5.21
3.53
3.78
7.26
6.76
14.73 15.24
5.33
5.84
6.40
6.65
7.37
7.87

-

INCHES
MIN MAX
2.090 2.120
2.180 2.220
1.050

•

0.2BO
0.032
BSC

~
~
~
~
~
~

O. 139
0.266
0.580
0.210
0.252
0.290

CASE 346-01

-t.m0.286
0.600
0.230
0.262
0.310

MJ1 0051, MJ10052

MAXIMUM RATINGS (Continued)
ELECTRICAL RATINGS
Rating

Symbol

Value

Unit

VCEO

850
750

Vdc

Collector-Emitter Voltage (RBE = 10 Ohms)

VCER

900

Vdc

Collector-Base Voltage

VCB

900

Vdc

Emitter-Base Voltage

VEB

8.0

Vdc

IC

50
75
150
250

A

IB

50
100

A

Po

500
4.0
667

Watts
W/oC
Watts

TJ, Tst9

-55 to +150
-55 to +200

°C

Collector-Emitter Voltage

Collector Current Base Current -

MJ10051
MJ10052

Operating, TC = 125°C
Continuous, TC = 25°C
Peak Repetitive, TC = 25°C
Peak Nonrepetitive, TC = 25°C

Continuous
Peak Nonrepetitive

Total Device Dissipation @ TC:: 25°C

Oerate abo"," 25°C
For 1 ~minute overload
Operating Junction and Storage Temperature Range
For 1·minute overload

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I Symbol

Characteristic

Min

Typ

Max

Unit

850
750

-

-

Vde

-

2.0
10

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 250 mAde, IB = 0)

MJ10051
MJ10052

VCEO(sus)

Collector Cutoff Current
(VCE = 900 Vdc, VBE(off) = 1.5 Vde)
(VCE = 900 Vdc, VBE(off) = 1.5 Vde, TC = 150°C)

ICEV

Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)

lEBO

-

-

mAde

-

950

mAde

SAFE OPERATING AREA
Second Breakdown Collector Current with Base Forward-Biased

'FBSOA

-

Clamped Inductive SOA with Base Reverse-Biased

RBSOA

Overload SOA

OlSOA

-

ON CHARACTERISTICS (1)
DC Current Gain
(lc = 50 Adc, VCE = 5.0 Vdc)
(lc= 50 A, VCE = 10V)

hFE

Collector-Emitter Saturation Voltage
(IC = 50 Ade, IB = 5.0 A)
(IC = 75 Ade, IB = 15 A)
(IC = 50 Ade, IB = 5.0 A, TC = l000C)

VCE(sat)

Base-Emitter Saturation Voltage
(lc = 50 Adc, IB = 5.0 Ade)
(lC = 50 Ade, IB = 5.0 Adc, TC = l000C)

VBE(sat)

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
(1) Pulse Test. Pulse width of 300 ",S, duty cycle "'2.0%.

1-597

25
40

-

-

-

-

-

Vde

-

-

2.0
5.0
2.5

-

-

3.0
3.0

Vde

MJ10051, MJ10052

ELECTRICAL CHARACTERISTICS (Continued) (TC = 25°C unless otherwise noted)

IIIJ'

I

I

Min

Typ

Max

Unit

td
tr
ts
tl

-

0.03
1.2
3.3
1.5

0.25
5.0
10
5.0

I's
I's
I'S
I'S

tsv
tc
tsv
tc

-

5.0
3.0
3.5
1.5

15
10
10
5.0

I's
I'S
I'S
I'S

Power Oissipation (lB = 0)

Po

250

W

VF

2.7

5.0

V

Reverse Recovery Time*
(di/dt = 50 AIl's, IF = 50 A, VBE(olf)

trr

-

-

Forward Voltage (1) (IF = 50 A)

0.2

1.0

I'S

ton

-

0.1

1.0

I's

IFSM

-

-

500

A

7.0

25

A

Characteristic

Symbol

SWITCHII\lG CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time

(VCC = 300 Vdc, IC = 50 A, lSI = 5.0 A,
VSE(off) = 5.0 V, tp = SOl'S,
Duty Cycle';; 2.0%)

Inductive Load, Clamped
Storage Time
Crossover Time
Storage Time
Crossover Time

TJ = 100°C

(lCM = 50 A,
VCEM = 300 V, VBE(off) = 5.0 V,
IBI = 5.0 A)

TJ = 25°C

C-E DIODE CHARACTERISTICS

=5.0 V)

Forward Turn-On Time
(Compliance Voltage =50 V, IF = 50 A)
Single Cycle Surge Current (60 Hz)
Reverse Recovery Current
(IF = 50 A, d,ldt = 50 AIl's)

IRM(REC)

(1) Pulse Test. Pulse wIdth ~ 300 ,us, duty cycle

~2.0%

* Requires negative base-emItter voltage for fast recovery performance.
TYPICAL ELECTRICAL CHARACTERISTICS

-..---

FIGURE 2 -

FIGURE 1 - DC CURRENT GAIN
400
TJ = 1000C.....

~

'"ffi
:l§

200

f-

N
~

/

/

100

~

..... TJ = 25°C

./

,

'"

~

100

.\

\

'-'

c

;

50

20
1.0

/

50

VCE = 5.0 V

I
2.0

I

10
50
20
IC, COLLECTOR CURRENT lAMPS)

20
10

100

50

.......

~
~

\

TJ = 25°C

200

,/

~
~

50

\

'-'

"'

VCE

.It 20

=600 V_ - r--

II II

10

Til
20

FIGURE 4 2.0

10
20
50
IC, COLLECTOR CURRENT lAMPS)

50

100

COLLECTOR SATURATION VOLTAGE

1.8

I I

16

Ic/la = 10

~
!::i 1.4

\

100

c

TJ = 25°t

/

I

FIGURE 3 - DC CURRENT GAIN
500

'"
'":::>
'-'

"'-

VCE = 2 0 V

II
VCE= 10V

'-'

lL

~

V

-"

:::>

:::>

...ill'"

200

;;;:

'"

'-'
'-'
c

~

DC CURRENT GAIN

400

r--r-..,

~
~
:::
B

12

10

0.8

-

0.6

r-TJ = 25°C
TJ = 1000t

--

F:==~

II

0.4

"'

~ 0.2

5.0
2.5

5.0

10
20
50
IC, COLLECTOR CURRENT lAMPS)

100

250

1-598

o

10

2.0

5.0
10
20
IC, COLLECTOR CURRENT lAMPS)

50

100

MJ10051, MJ10052

III

TYPICAL ELECTRICAL CHARACTERISTICS (continued)
FIGURE 6 - EMITTER-COLLECTOR DIODE
FORWARD VOLTAGE

FIGURE 5 - BASE-EMITTER SATURATION VOLTAGE
4. 8

2.4

~
e
a
'"'"

2.0

I

-

,_

Ic/le = 10
TJ = 25°C

~ 1.6
>

~
~

12

;a

--

V ... "

...-

'"

i

2. 4

~

c 1.
e
is
~1. 2 _

.... O.B

.If
2.0

10

50

20

50

,....

100

......

V

....

O. 6
2.0

0.4

10

/

~ 3.

b
~ 3.0
c

~=lOOOC

f--

I

~ 4. 2_TJ= 25°C
~

10
20
50
IF, FORWARD CURRENT lAMPS)

5.0

IC, COLLECTOR CURRENT lAMPS)

100

200

TYPICAL SWITCHING CHARACTERISTICS
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

FIGURE 8 - INDUCTIVE SWITCHING TIMES
5

IC"'_

./"

V

I

..........-

90% VCEM

~ 1-- ' ",

,C/"

I"

-

i,

IVO%ICM

Ifl~ I"

,

.. 9. O~ \

-I- ,,,-

:--

/

"-

10% VCEM
90%181

'-"""

.., 6. 0"'-

IIJ"........
leM

--

~

~

!

"-

~~

~
~

-~

3. 0

-- --\- -- --- - - -- .-

IC = 5J A
IBI = 5.0 A
VCEM = 300 V

Vclamp

2[\:e @'100°C

I~ ric --\
VCE
'8-

VCEM

'\j

0

:--

I sv @ Oooc

--- -

2.0

Is.@

0(;"

le@ 25°C

,.

3.0

7.0

ti.U

8.0

VBEloff), BASE-EMITTER VOLTAGE IVOLTS)

TIME

FIGURE 9 - TYPICAL TURN-ON SWITCHING TIMES
3.0

1

2.0

.

FIGURE 10 - TURN-OFF SWITCHING TIMES
0

1.0

0.5

-

VCC = 300 V
5. 0== VBEloff) = 5.0 V
- IC/IB 10
- TJ = 25°C
2. 0

VCC = 300 V
Ic/le = 10
RBE=lon
TJ 25°C

~

~

~..,

0.2

"-

1"'-

0.1
0.05
0.03

1.0

It

.....

-

>-

0

/

-

s

V .....

f

5

/

O. 2

Id

2,0

5.0
10
20
IC, COLLECTOR CURRENT lAMPS)

o.1
50

100

1.0

2.0

5.0

10

20

IC, COLLECTOR CURRENT IA)

1-599

50

100

MJ10051. MJ10052

TABLE 1 - RBSOA AND INDUCTIVE SWITCHING DRIVER SCHEMATIC
RESlsnVE
SWITCHING
TURN ON TIME

RBSOA AND INDUCTIVE SWITCHING
DRIVER SCHEMATIC

on
Z

... 0

iE
Zo

PG

-zo
(J

•

181 adjusted 10
obtain the forced
hFE deSIred

INntO~F

HP214

-380-J

TURN-OFF TIME

PW Varied to Attam

":"
Leoti = 10 mH
Rcol l=07n

Use inductive sWltchmg

~005"F
20",F

50

le= 250 rnA

CirculI as the Input to
the resIstive lesl CIrcuit

• 11000

Vee = 10 V

Leol ' = 50j,(H
20V

Vee = 300 V

MTM14N05
-YoU

Vee'"

Vclamp = VCEO(sus)

RL =

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

eou

Pulse Width.: 25 ",5

Drtve

RESISTIVE TEST CIRCUIT
I, Adjusted 10
Obts,n Ie

t,---veeLcOll(lCM'

1,-

--,-Vclamp

-1-,

LeOII (lCMJ
Vcl amp

Test EqUipment
Scope - TektrOniX
475 or EqUivalent

'Adjust - V such that VBEloff) = 5 V except., required for RBSOA IFigure 141.

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and motor controls, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
t sv = Voltage Storage Time, 90% IBI to 10 % VCEM
trv = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
tti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform
FIGURE 11 - PEAK REVERSE BASE CURRENT
30

.,/'"

V

8
2

l

FIGURE 12 - REVERSE RECDVERY WAVEFORM

./

t-IC=JOA
lSI = 5.0 A
t-TJ = 2SoC

~.

is shown in Fig ure 7 to aid on the visual identity of
these terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 Vcclcltc)f
In general, trv + tfi "" tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency converter Circuits, the user-oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds Itc and tsv) which are
guaranteed at 100°C.

'/

./

......
./
./

!P 6. 0

0
0

0.5 "./Oiy
.0

.0

.0

5.0

6.0

.0

6.0

VaE(off) BASE·EMITTER VOLTAGE (VOLTS)

.1-600

MJ1 0051, MJ10052

SAFE OPERATING AREA INFORMATION

The S.f. Oper.ting Are. figure••hown in Figur•• 13 .nd 14

era specified for the.. device. under the te.t condition. shown.

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; Le .. the transistor muSI not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 13 may be found
at any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 20.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 13 - MAXIMUM FORWARO-BIAS
SAFE OPERATING AREA (FBSOA)

~

!

5

100
50

10 Il'
(Turn·On Switching)

20
10

5.0

dc

~

MJ100520;;'"
MJ10051

B 2.0
'"

t3
~

B

""1=

1.0

05

~
Current limIt
02f- -----Thermalllmit@Tc-250C

§;

~ 0.1

ISingle Pul.e)
Second Breakdown limit

0.05 ~

0.02
0.01510

2.0

50

10

20

50

100

200

500 850

VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

REVERSE BIAS

FIGURE 14 - MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA (RBSOA)

For inductive loads. high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse-biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse-Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse-biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 14
gives the RBSOA characteristics.

150
TJ';; 100°C
IC/IB;;' 10
VBE(otll; 5.0 V

0

0

0

\

0

"'- ..........
100

300

500

700

900

OVERLOAD SAFE OPERATING AREA

VCE. PEAK COLLECTOR·EMITTER VOLTAGE (VOLTSI

The forward-bias safe operating area (FBSOA) specification given in Figure 13 adequately describes transistor
capability for normal repetitive operation. When short circuit or fault conditions occu r, these tra nsistor specifications
are not always adequate. A specification called overload
safe operating area (OlSOA) has been developed to describe
the transistor's ability to survive under fault conditions.
OlSOA is specified under two types of conditions.

FIGURE 16 - POWER DERATING

100

i!

80

'"
~

~~

" "'-

r--...... ......
r-...
Therm.l~

:f 60

'"z
~
ffi

'"

Dereting

Sacond Breekdown
Derating

r---..

t'....

'"

40

i

.. 20

o
o

40

80
120
TC. CASE TEMPERATURE (OCI

-

TYPE I OlSOA

......

r--...

"
160

r-....

" "'-

200

Type I OlSOAapplies when maximum collector current
is limited and known. A good example isa circuit where an
inductor is inserted between the transistor and the bus,
which limits the rate of rise of collector currentto a known
val ue. Ifthe tra nsistor is then turned off within a specified
amount oftime, the magnitude of collector current is also
known. Figure 16 depicts the Type I OlSOA rat'ing for the
devices. Maximum allowable collector-emitter voltage
versus collector current is plotted for severa I pulse widths.
(Pulse width is defined as the time lag between the fault
(continued on back page)

1-601

MJ10051, MJ10052

OVERLOAD CHARACTERISTICS
FIGURE 18 - OVERLOAD SAFE OPERATING AREA
TYPE I (OlSOA)
250

~ 200 _

::E

T~ = 25lC

~

~ 150

'"
l'l
'"

~

10

m

9.0

.\\\

W
\'

Ii;

in

!i
....z~

~\

~\\

100

\~

8

Ji> 50

o

w

tp - 10 ~s

/

~

tp=20~s_

~ 1/1

~~

o

~
i'l

l/_tp = 5.0 ~s

\\'(

:j

FIGURE 17- OVERLOAD SAFE OPERATING AREA
TYPE II (OlSOA)

I

~

r--

T~=25JC- t--

8.0
7,0
6.0
5.0
4.0
3.0
tp = 5.0

2.0
1.0 r--tp= 20 ~s
'1
1- ~

I

200
850
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

o

o

1000

/

I

~s

I

~

200
500
850
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

FIGURE 18 - OVERLOAD SOA TEST CIRCUIT
TYPE I

Not..:

• VCE=VCC+VSE
•

FIGURE 19 - OVERLOAD SOA TEST CIRCUIT
TYPE II

Adjust pulsed current source

for desired IC, tp
p';;erc.flyReTay---------,

I

I
L

N.O.

N.C.

I

______ JI

J:::' 1

VCC

Not•• :

+6V

• Rep Rate';; 10 Hz
• Adjust Rl for desired IS
• Pulse· delay time at the

39

50

generator determines pulse
width at the device under test

15

1-602

MJ10051, MJ10052

SAFE OPERATING AREA INFORMATION (continued)
TYPE I OLSOA (continued)
condition and the removal of base drive.) Storage time of
the transistor has been factored into the curve. Therefore.
with bus voltage and maximum collector current known.
Figure 16definesthe maximum time which can be allowed
for fault detection and shutdown of base drive.
Type I OlSOA is measured in a common-base circuit
(Figure IS) which allows precise definition of collectoremitter voltage and collector current. This is the same
circuit that is used to measure·forward-bias safe operating

area.
TYPE II OlSOA
Type II OlSOAapplies when maximum collector current
is not limited by circuit design. but is limited only by the
gain olthe transistor. Therefore. collector current does not
appear on the Type" OlSOA curve. This curve defines a
safe region of operation from the information that is usually
available to the designer.
This information is normally base drive. bus voltage and
time. In terms olthe OlSOA curve. bus voltage is assu med
to be worst-case collector-emitter voltage. and time is
defined to be the same pulse width that was described for
Type I OlSOA. Using these variables. maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus

determined by the circuit parameters. Type" OlSOA. as
shown in Figure 17. is measured in the circuit shown in
Figure 19. and measurement is made as follows: Base
current is applied while the collector is open. allowing a
highly overdriven saturated condition. Next. a stiff voltage
sou rce is applied to the collector. The rising voltage at the
collector of the transistor triggers a delay function. At the
end of this delay. base drive is removed. The delay time is
the variable on the Type II OlSOA curve. The storage time
of the transistor is thereby factored into the rating.
There are several additional aspects to be considered
regarding OlSOA. The first consideration is that OlSOA is
strictly a NONREPETITIVE rating. It is intended to describe
the survivabilityolthetransistor during an accidental overload and is not intended to describe a stress level which
can be sustained indefinitely. The number of nonrepetitive
faults for which OlSOA is defined for the devices are 100
occurrences. Another factor is the form of turn-off bias.
For the devices. turn-off bias has relatively little effect on
its OlSOAcapability. This observation is valid from 'S2 = 0
(soft) to VSE(off) = 5 V (stiff).
OlSOA is subjectto the same derating with temperature
as normal FBSOA. The second breakdown derating curve is
applied to the allowable current at any given voltage. using
the same procedure that is followed with pulsed FBSOA.

FIGURE 20 - THERMAL RESPONSE

~

10

~

05

."

0= 0 5

R8JC'i';i~ rlt) Rue""

~

'-'

z

02

~

01

fii

;;i

RUC = 025 °C/W Ma,
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At tl
TJlpk) - TC = Pip.) Ruclt)
Pip.)

0=02

1111
0=01

~

tILJL

ffi 0 05

;!:

s;;

ill 002
:i

::~oo 1
'2

001

S)'~~:~ PIU:S~

~11f-~

f-

t2
OUTY CYCLE. 0 = I1/t2

1111111

llllllllU L
01

10

10
t. TIME (ms)

1-603

100

1000

10000

III

MJI0I00

®

MOTOROLA

Designer's Data Sheet
100 AMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTOR

50 KVA SWITCHMODE TRANSISTOR
1 OO·Ampere Operating Current

450 VOLTS
600 WATTS

The MJ10l00 Darlington transistor is designed for industrial
service under practical operating environments found in switching
high power inductive loads off 230-Volt lines.

Designer's Data for

"Worst-Cass" Conditions
The Designer's Data Sheet permits
the design of most circuits entirely from
the information presented. Limit datarepresenting device characteristics
boundaries-are given to facilitate
"worst-case" design.

I

i-K

Lr-

>---- A

B

i

_._.1

~1

1/4-20 UNC2B

-

R

.1 J

L:!

~
*Emitter-Collector Diode is a high power diode.

MAXIMUM RATINGS
Value

Unit

20

in.-Ib

Lead Torque (Lead to bus with 1/4-20 Screw)
(Note 2)

20

in.-Ib

Per Unit Weight

120

grams

Rating

I

0.25

I

°C/W

Mica Insulators available as separate items.
0.003" thick. Motorola Part Number 14ASB123B7B001.
0.006" thick. Motorola Part Number 14ASB 12387B002.

Notes:
1. A Bellev.llewasherof0.472"O.D .• 0.205"I.D . 0.024"th.ck and 150poundsflat ••
recommended.
2. The lead torque should be limited to 20 in -Ib, unsupported to prevent rotation of the
terminal In the package. The torque may be Increased to 5010 -Ib if support IS used to
prevent rotation. The maximum penetration of the screw should be lImited to O. 75
H

1-604

I

,

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case,R9JC

-.

STYLE 1
PIN 1 BASE
2 EMITTER
C
3 EMITTER
I 4 COLLECTOR
5 COLLECTOR

NOTES:
I. DIMENSION A AND BARE DATUMS.
2. WIS SEATING PLANE.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLES:
1"'1* 0.36 (o.014)@ITIA@i B@I

Mechanical Ratings
Mounting Torque (To heat sink with 10-32 Screw)
(Note 1)

S

..J

MILLIMETERS
INCHES
DIM MIN MAX
MIN MAX
A 53.09 53.84 2.090 2.120
B 55.37 56.39 2.180 2.220
C
26.67
1.050
D
6.10
6.60
~
6.60
7.11
E
~
0.71
0.81
F
~
43.31 BSC
G
H 12.57 12.82
1.52
J
1.62 0.060 0.064
K
9.50
9.75 0.374 0.384
L 10.21 10.46 0.402 0.412
M 18.92 19.18 0.745 0.755
N 23.67 23.93 0.932 0.942
P
5.21 0.200 0.205
5.08
Q
3.53
3.78 0.139 0.149
R
6.76
7.26 0.266 0.286
S 14.73 15.24 0.580 0.600
V
5.33
5.84 0.210 0.230
W
6.40
6.65 0.252 0.262
X
7.37
7.87 0.290 0.310
CASE 348-01
MO-040AA

~

MJ10100

III

MAXIMUM RATINGS (Continued)
Electrical Ratings

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

450

Vdc

Collector-Emitter Voltage (RBE' 10 Ohms)

VCER

500

Vdc

Collector-Base Voltage

VCB

500

Vdc

Emitter-Base Voltage

VEB

8.0

Vdc

Collector Current - Operating, TC' 87.5°C
- Continuous. Te;; 25°C
- Peak Repetitive, TC' 25°C
- Peak Nonrepetitive, Te::: 25°C

IC

100
150
300
500

A

Base Current -

18

50
100

A

Po

500
4.0
667

Continuous
Peak Nonrepetitive

Total Device Dissipation @ Te' 25°C
Derate above 25°C
For 1 -minute overload
Operating Junction and Storage Temperature Range
For 1-minute overload

Watts
W/OC

Watts

-55 to+150
-55 to +200

TJ, Tstg

°c

ELECTRICAL CHARACTERISTICS (Tc' 25°e unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

450

-

-

Vdc

-

2.0
10
10

mAde

-

650

mAdc

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC' 250 mAde, IB ' 0)

mAde

Collector Cutoff Current
(VCE' 500 Vdc, VBE(olf)' 1.5 Vdc)
(VCE' 500 Vdc, VBE(off)' 1.5 Vdc, TC ' 150°C)

ICEV

Collector Cutoff Current
(VCE' 500 Vdc, RBE' lOn, TC' 100°C)

ICER

-

Emitter Cutoff Current

lEBO

-

(VEB' 4.0 Vdc, Ie' 0)
SAFE OPERATING AREA
Second Breakdown Collector Current with Base Forward-Biased

FBSOA

Clamped Inductive SOA with Base Reverse-Biased

RBSOA

See Figure 13
See Figure 14

Overload SOA

OlSOA

See Figures 16 and 17

ON CHARACTERISTICS (t)
DC Current Gain
(lC' 100 Adc, VCE' 5.0 Vdc)
(lC' 100A, VCE' 10V)
Collector-Emitter Saturation Voltage

hFE

VCE(sat)

(lC' 100 Adc, IB' 3.3 A)
IC' 150Adc,IB' 12A)
(lC' 100 Adc, IB' 3.3 A, TC' 100°C)
Base-Emitter Saturation Voltage
(lC' 100 Adc, IB ' 3.3 Adc)
(lC' 100 Adc, IB' 3.3 Adc, TC' 100°C)

50
60

-

-

-

-

2.0
3.3
2.5

-

-

3.0
3.0

Vdc

-

VBE(sat)

Vdc

-

DYNAMIC CHARACTERISTICS
Output Capacitance
(YCB' 10 Vdc, IE' 0, I test ' 1.0 kHz)
(1) Pulse Test. Pulse width of 300 loiS, duty cycle :E;;.2.0%.

1-605

MJ10100

ELECTRICAL CHARACTERISTICS (Continuad) (TC = 25°C unlass otherwise noted)

OJ

Characteristic
SWITCHING CHARACTERISTICS

Resistive Load
td
tr
ts
tf

-

tsv
tc
tsv
tc

-

Powar DIssipation (IB = 0)

Po

250

W

VF

-

-

Forward Voltage (1 )(IF = 100 A)
(iF=200A)

1.1
1.4

1.5

2.0

V
V

Reverse Recovery Ti me
(di/dt = 25 AI ~s. IF = 100 A)
Forward Turn-On Time
(Compliance Voltage = 250 V. IF = 100 A)

trr

-

3.3

10

~s

0.3

1.0

~s

-

500

A

Delay Time
Rise Time
Storage Time
Fall Tima

(VCC = 250 Vdc. IC = 100 A. IBI = 3.3 A.
RBE = 10 n. tp = 50~s.
Outy Cycle';; 2.0%)

0.03
0.9

0.25
3.0

~s

10

25
10

~s

3.0

~s

~s

Inductive Load. Clamped

Storage Time
Crossover Ti me
Storage Time
Crossover Time

TJ = 100°C

(ICM= l00A.
VCEM= 250V. RBE= Ion.
IBI = 3.3 A)

TJ = 25°C

15

50
15
25
10

4.0
10
2.7

~s
~s
~s
~s

C-E DIODE CHARACTERISTICS

ton

Single Cycle Surge Current (60 Hz)

-

IFSM

(1) Pulse Test. Pulse wIdth of 300 P.s, duty cycle ~2.0%.

TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 500

I I III
I-- r-- iJ

- ""

V

~ 1~O~~

500

- ......"

V

-

/

TJ 1=

..,? ;..;-

I

~

...c 100
30
2.0

5.0

10

20

100

-

FIGURE 3 -

30
2.0

200

z

~

ia
...c

\

1\
5.0

10

FIGURE 4 -

'\

\

~



~

....- - ~100oC
.J..-" 1--""

-

10

20

09

-i'

I
50

50

100

I-

II I
T~ J2UCI

/

....-

-

I--

I--

05
2.0

200

./

-

11

~
w
c
c
is 07

I-

10
20

-

<>

'"

V

TJ = 25°C

1.3

w

'""'

//
'l

'"
~

<>

5.0

10

IC. COLLECTOR CURRENT (AMPS)

20

50

100

200

If. fORWARD CURRENT (AMPS)

TYPICAL SWITCHING CHARACTERISTICS
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

FIGURE B 20

'C",_ _

..;"

~EM

' '\4
911% VCEM 1111911% 'CM

V

./

'c/"

I-

f--Isv

trv

/
'B-

-

90% 'Bl

--

-- --\- --

'--'"

--

-

14

"-

~

~

-

10

-'

8.0

Is.l@ 25°C

V

r-.2%......
Ie

lOboc

I

20

Ie @ 25°C

r I II

I

o

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

RaE. aASE·EMITTER RESISTANCE (OHMS)

VeC = 250 V
leila = 10
RaE=10n
TJ 25°C

0.5

FIGURE 10 - TURN-OFF SWITCHING TIMES

/

}

I, ;"

"

-

i'.

0.05

0.02
2.0

/'

;:::

..,

f-""

/'
20

If

'"

1.0

VCC = 250 V
Ic/la = 10
RaE=10n
TJ = 25°C

05

Id

10

Is

~ 2.0

........
5.0

/

10
5.0

~
0.1

J

20

1.0

..,

I;

f-"'"

4.0

-

-t1 T

V V

6.0

FIGURE 9 - TURN-ON SWITCHING TIMES

;:::

--1"

;:::

2.0

0.2

Is.@ lOO°C

12

~

TIME

i

I 1111 I
I 1111 I

Ie = 100 A
VCEM = 250 V
lal = 3.3 A

16 -

10% .......
ICM

II1%VCEM

II I

18

fI~ttJ-- 1-',,-

--J r'c ---\
VCE

_ Vclamp

INDUCTIVE SWITCHING TIMES

50

100

200

IC. COLLECTOR CURRENT (AMPS)

0.2
2.0

11111
5.0

10

20

50

IC. COLLECTOR CURRENT (AMPS)

1-607

100

t====
F=

f=
f-

I-200

MJ10100

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOlSUl'

1

DRIVER SCHEMATIC

70n

.. . ~
s~

~,

U

For Inductive loads pulse wIdth

".d,",Io"o "",,,",,,,,,,,,,, 'e

U

lIsov

PW V.ri~ 10 Au.in
'C"210mA

....

•

~

-~2N3762

0003

lOOn

"" ~

-

~3
-"
u>

Vee·

~ MTM1224

Leoil" 50,uH
Vee - 20 V

INDUCTIVE TEST CIRCUIT

obtam the forced
hFE desired

f-<

TURN-OFF TIME

,

Use mductlve SWltchmg
CIrCUit as the mput 10

r

10 V

Vel.""o· VCEOlius)

IS1 adjusted 10

~ ~

TOn
Lc:oil- 10mH
R eo,,- 0 7 n

,.@r:

.30 V
AdJustRl
to obtaIn

''f gO"¥6V d..".d '.,
~OOO5
~ J

50n

~~

50U

.,

20011

o T ~F

10J'F

~

SWITCHIPIIG
TURN·ON TIME

loon

-----~r

-~

RESISTIVE

RBSOA AND INDUCTIVE SWITCHING

the reSIStive testctrCl.llt

Vee" 250 V
RL - 2.5 n
Pul. Wfdth - 26 ".

""

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

t,

Adjultltd to

ObUt" Ie

~

~,

r

U

II:

..

U

Input

~

See Above for

2

V cl.mp

i"

II ~'amped

I

I
I

1N4937
or

Equjvalant

Detailed Cf')nd~110ns

'eM
__
'eLE21=

1
I I RcOl1

,

3

L j

-i- Yee

V'CEM

T,me

"Adjust - V such that VBE(off)

Leo.1 (leM)

V'clamp

T est

Equ~pment

Scope - TektronIX
475 or EqUIValent

~~2~

= 5 V except as required for RBSOA

"L

'2---VCI.mp

VCElJ:b~
___ -L,

~ 6~s·}
0.1 n

1.'~
-= =Yee

L col' CleM)

t1""-VCC-

1--,,- "t-

I L cDI ,

(Figur. 14).

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and motor controls, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.

is shown in Figure 7 to aid on the visual identity of
these terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 Vcclc(tdf
In general, trv + tfi = tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user-oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and tsvl which are
guaranteed at 100°C.

tsv = Voltage 'Storage Time, 90% IS1 to 10 % VCEM
trv = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
'ti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform
FIGURE 11 -

PEAK REVERSE BASE CURRENT

FIGURE 12 - THERMAL RESPONSE
C
N

10
9.0

100~

-

::Ii
:$. 7.0
>-

15

6.0

'"
El

5.0

~

4.0

'"

~

=!:

g

~

--

IC!
IB=3.3A
VCEM = 250 V TJ = 25°C
-~

~ 8.0

\
\

\

3.0

o

o

0=0.5

ReJ~'Ni~rlt) ReJbuH
ReJC = 0.25 °C/W Max
o CURVES APPLY FOR POWEll
PULSE TRAIN SHOWN
READ TIME At t1
TJ(pkl- TC = P(pkl ReJC(t)
P(pkl
II lUI

0.5

~

'-'

~ 0.2

..~'"

O. 1

0=0.2

I

0=0.1

>-

i5

I'.

1.0

~

PIU:S~

tJUL

11111111111

DUTY CYCLE, 0 = tl/t2

~ 0.05

\

2.0

10

~ 0.0 2

g

~O.O 1

1.0

2.0

3.0

4.0

5.0

6.0

7.0

B.O

9.0

10

'E-

VBE. BASE-EMITTER RESISTANCE IOHMS)

0.D1

I~i~I~:~

~~~

11111
0.1

1.0

10
1. TIME Ims)

1-608

100

1000

10000

MJ10100

The Safe Operating Araa figures shown in Figures 13 and 14

SAFE OPERATING AREA INFORMATION

are specified for these devices under the test conditions shown.

FORWARD BIAS

FIGURE 13 - MAXIMUM RATED FORWARD BIAS,
SAFE OPERATING AREA (FBSOA)
300
150
100
~

10".
. ~I=
ITurn·On Switching) =~

50

~
dc

~

1.0

-

::i

8

Current limit

- - - - - Thermal limit @ TC - 25°C
ISingle Pulse)

~

~.

0.1
0.03
0.5

Second Breakdown limit
1.0

2.0

5.0

10

20

50

100

200

450

VCE, COLLECTOR EMITIER VOLTAGE IVOLTS)

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TC ~ 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 13 may be found
at any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 12.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse biased.
Underthese conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level forthese devices is specified as Reverse-Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse-biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 14
gives the RBSOA characteristics.

FIGURE 14 - MAXIMUM RATED REVERSE-BIAS
SAFE OPERATING AREA (RBSOA)
300

I

0;-

!l1 250
5.
....
z

\
\
\

~ 200
~

e

2~OC ~ TJ ",llOoolC

-

RBE~10n

-

i

150

\

~

8100

~

~

\

50

o

o

100

200

'\

OVERLOAD SAFE OPERATING AREA

...........

300

400

500

600

VCE, PEAK COLLECTOR·EMITIER VOLTAGE (VOLTS)

FIGURE 15 - POWER DERATING
100

~ 80

'"t;
:;:
'"z
0

60

~~

TYPE I OlSOA

t'---

'" """

.......

~

Thermal

Derating

g
'" 40

Second Breakdown
Derating

~

............

l'.....

........

'"~

-

I'.....
............

"'- ......

0

" ""-

~ 20

o
o

40

The forward-bias safe operating area (FBSOA) specification given in Figure 13 adequately describes transistor
capability for normal repetitive operation. When short circuit or fault conditions occur, these transistor specifications
are not always adequate. A specification called overload
safe operating area (OLSOA) has been developed to describe
the transistor's ability to survive under fault conditions.
OLSOA is specified under two types of conditions.

80

120

Te. CASE TEMPERATURE ('CI

160

"""

200

Type (OLSOA applies when maximum collector current
is limited and known. Agood example is a circuit where an
inductor is inserted between the transistor and the bus,
which limits the rate of rise of collector current to a known
value. (f the transistor is then turned off within a specified
amount of time, the magnitude of collector current is also
known. Figure 16 depicts the Type I OLSOA rating for the
MJ 101 00. Maximum allowable collector-emitter voltage
versus collector current is plotted for several pulse widths.
(Pulse width is·defin·ed as the time lag between the fault
condition and the removal of base drive.) Storage time of
the transistor has been factored into the curve. Therefore,
with bus voltage and maximum collector current known,
(continued on back page)

1-609

III

MJ10100

III

SAFE OPERATING AREA INFORMATION (continued I
TYPE I OlSOA (continuedl

shown in Figure 1 J., is measured in the circuit shown in
Figure 1 9, and measurement is made as follows: Base
current is applied while the collector is open, allowing a
highly overdriven saturated condition. Next, a stiff voltage
source is applied to the collector. The rising voltage at the
collector of the transistor triggers a delay function. At the
end of this delay, base drive is removed. The delay time is
the variable on the Type II OLSOA curve. The storage time
of the transistor is thereby factored into the rating.
There are several additional aspects to be considered
regardi ng OLSOA. The first consideration is that OLSOA is
strictly a NON REPETITIVE rating. It is intended to describe
the survivabilityofthe transistor during an accidental overload and is not intended to describe a stress level which
can be sustained indefinitely. The number of nonrepetitive
faults for which OLSOA is defined for the MJ10l00 is
100 occurrences. Another factor is the form of turn-off
bias. For the MJ10l00, turn-off bias has relatively little
effect on its OLSOA capability. This observation is valid
from IB2 0 (soft) to VBE(off) 5 V (stiff).
OLSOA is subject to the same derating with temperature
as normal FBSOA. The second breakdown derating curve is
applied tothe allowable current at any given voltage, using
the same procedure that is followed with pulsed FBSOA.

Figure 16definesthe maximum time which can be allowed
for fault detection and shutdown of base drive.
Type I OLSOA is measured in a common-base circuit
(Figure 18) which allows precise definition of collectoremitter voltage and collector current. This is the same
circuit that is used to measure forward-bias safe operating
area.

TYPE" OlSOA
Type II OLSOA applies when maximum collector current
is not limited by circuit design, but is limited only by the
gain ofthe transistor. Therefore, collector current does not
appear on the Type II OLSOA curve. This curve defines a
safe region oi'operation from the information that is usually
available to the designer.
This information is normally base drive, bus voltage and
time. In terms ofthe OLSOAcurve, bus voltage is assumed
to be worst-case collector-emitter voltage, and time is
defined to be the same pulse width that was described for
Type I o LSOA. Using these variables, maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus
determined by the circuit parameters. Type II OLSOA, as

=

1-611

=

MJ1010l
MJ10102

®

MOTOROLA

Designer's Data Sheet
100 AMPERE

NPN SILICON.
POWER DARLINGTON
TRANSISTOR

50 KVA HIGH SPEED SWITCH MODE TRANSISTOR
100-Ampere Operating

Curr~mt

360 and 460 VOLTS
600 WATTS

The MJ1 01 01 Darlington tran~istor is designed for industrial
service under practical operating environments requiring fast
switching speed for highly efficient systems operating at high
frequency such as inverters, PWM controllers and other high
frequency systems operating.from 230 V line".

Designer's Data for
"Worst-Case" Conditions
The Designer's Data Sheet permits
the design of most circuits entirely from
the information presented. Limit datarepresentlllg device characteristiCS
boundaries-are given to facifitate
"worst-case" design.

w

•

L

v

A

1/4-28 UNC28

i'?'4::
'C ='"

~
.. s '
:t

E

" 25
*Emitter-Collector Diode is a fast recovery, high power diode.

MAXIMUM RATINGS

Mechanical Ratings
Rating

Value

Unit

Mounting Torque (To heat sink with 10·32 Screwl
(Note t)

20

in.·lb

Lead Torque (Lead to bus with 1/4·20 Screw)
(Note 2)

20

in.·lb

Per Unit Weight

120

grams

THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case,R6JC

1

0.25

1

°C/W

0.003'" thick. Motorola Part Number 8123878001.
0.006'" thick. Motorola Pan Number 8123878002.

Notes:
1. A Belleville washer of 0.472" 0.0 .• 0.205"1.0., 0.024" thick and 150 pounds flat is
recommended such as PIN AM 125206 available from National Disc Spring Div.,
385 Hillside Ave .. Hillside N.J. 07205.
2. The lead torque should be limited to 20 in.·lb. unsupported to prevent rotation of the terminal
in the package. The torque may be increased to 60 in.-Ib if support IS used to prevent
rotation. The maximum penetration of the screw should be limited to 0.76".

4. OIMENSIONING AND TOLERANCING
PER ANSI Y14.5, 1973.

DIM
A
B
C
D
E
F
G
H
K
L
M
N
P

n

R
S
V
W
X

MIlliMETERS
MIN MAX
53.09 53.84
55.37 56.39
26.67
6.10
6.60
6.60
7.11
0.71
0.81
43.31 BSC
12.57 12.82
1.52
1.62
9.50
9.75
10.21 10.46
18.92 19.18
23.67 23.93
5.08
5.21
3.53
3.78
B.76
7.2B
14.73 15.24
5.33
5.84
6.40
B.BS
7.37
7.87
CASE 346·{11

1-612

BASE
EMITTER
EMITTER
COLLECTOR
COLLECTOR

NOTES:
1. DIMENSION A AND B ARE DATUMS.
2. OJIS SEATING PLANE.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLES:
Itlu.3B (0.014)91 TIA@IB91

J

Mica Insulators available as separate items.

PIN 1.
2.
3.
4.
5.

MJ10101, MJ10102

III

MAXIMUM RATINGS (Continued)
Electrical Ratings
Rating

Symbol

Value

Unit

VCEO

450
350

Vdc

Collector-Emitter Voltage (RBE = 10 Ohms)

VCER

500

Vdc

Collector-Base Voltage

VCB

500

Vdc

Emitter-Base Voltage

VEB

8.0

Vdc

Collector Current - Operating, TC = 87.5°C
- Continuous, TC = 25°C
- Peak Repetitive, TC = 25°C
- Peak Nonrepetitive, TC = 25°C

IC

100
150
300
500

A

Base Current -

IB

50
100

A

Po

500
4.0
667

Watts
W/oC
Watts

-55 to+150

°c

Collector-Emitter Voltage

MJ10101
MJ10102

Continuous
Peak Nonrepetitive

Total Device Dissipation @ Te::; 25°C
Derate above 25°C

For l-minute overload
Operating Junction and Storage Temperature Range
For l-minute overload

TJ, Tstg

-55 to +200

ELECTRICAL CHARACTERISTICS (TC = 2SOC unless otherwise noted)

Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC = 250 mAde, IB = 0)

MJ10l0l
MJ10l02

VCEO(sus)

Collector Cutoff Current
(VCE = 500 Vde, VBE(off) = '.5 Vdc)
(VCE = 500 Vde, VBE(off) = 1 5 Vde, Te = lS0°C)

ICEV

Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)

lEBO

4S0
350

-

-

-

2.0
10

Vde
mAde

-

-

5.0

mAde

SAFE OPERATING AREA
Second Breakdown Collector Current with Base Forward-Brased

FBSOA

See Figure 13

Clamped Inductive SOA with Base Reverse-BIBsed

RBSOA

See Figure 14

Overload SOA

OLSOA

See Figures 16 and 17

ON CHARACTERISTICS (1)

DC Current Gam

hFE

(lC = 100 Ade, VCE = 5.0 Vde)
(IC= 100 A. VeE= 10V)
Collector-Emitter Saturation Voltage
(lC = 100 Adc, IB = 3.3 AI
Ie = 150 Ade,IB = 12 A)
(IC = 100 Adc, 18 = 3.3 A, TC = 100°C)

VCE(sat)

Base-Emitter Saturation Voltage
(lC = 100 Ade, IB = 3.3 Adc)
. (lc = 100 Ade, IB = 3.3 Ade, TC = lOOOC)

VBE(sat)

Output Capacitance
(VCB = 10 Vdc, IE = 0, f test = 1.0 kHz)
~s.

-

-

-

-

-

-

-

-

-

2.0
3.3
2.5

-

-

3.0
3.0

Vde

Vde

-

DYNAMIC CHARACTERISTICS

(11 Pulse Test. Pulse width of 300

50
60

duty cycle ~2.0%.

1-613

MJ10101, MJ10102

ELECTRICAL CHARACTERISTICS (Continued) (TC = 25°C unless otherwise noted)
Symbol

Min

Typ

Max

Unit

td
tr
ts
tf

-

0.03
0.9
0.4

0.25
3.0
.5
1.25

!'s
!'s
!,S
!,S

t.v
tc
tsv
tc

-

2.5
0.8
1.5
0.5

7.5
3.0
3.75
1.5

!'s
!'s
!,S
!,S

Power Dissipation (lB = 0)

Po

Forward Voltage (1) (IF = 100 A)

VF

-

Characteristic
SWITCHING CHARACTERISTICS
Resistive Load
OeleyTime

(VCC = 250 Vdc. IC = 100 A. IBl = 3.3 A.
VBE(off) = 5.0 V. tp = 50 !,S
Duty Cycle';; 2.0%)

Rise Time
Storage Time
Fall Time

.0

Inductive Load, Clamped
Storage Time

Crossover Time
Storage Ti me
Crossover Time

(lCM = 100 A. VBE(off) =
5.0 V. VCEM = 250 V
IBl = 3.3 A)

TJ= l000C
TJ= 25°C

C-E DIODE CHARACTERISTICS

I

(IF= 100 A.
Idi/dt = 100 AI!,s)

Reverse Recovery Current

Reverse Recovery Time

-

250

W

1.7

5.0

V

-

20
0.4

50
1.0

A
!,s

ton

-

0.1

0.5

!'s

IFSM

-

-

500

A

IRMfrec\
trr

Forward Turn-On Time

(Compliance Voltage = 250 V, IF = 100 A)
Single Cycle Surge Current (60 Hz)
(1) Pulse Test. Pulse width of 300 IJs, duty cycle:;;;;2.0%.

TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 -

DC CURRENT GAIN

500

",..-

-

-

+J

~ l~o~d

z
~ 200

V

IE

~
13
'-'
CI

V

,,-

FIGURE 2 500

r-..

-

I'

r-

r--

"'r-.

TJ 1=

V-

~ 200

~ V-

....

VTJ = 25°C

ia

~

...

'\

100

~
50

VCE = 5.0 V

/

30
2.0

5.0

/

!\

10

20

50

100

200

5.0

IC. COLLECTOR CURRENT (AMPS)

-

FIGURE 3 500

z

~
:::.
«
'"
!:;

\.
\

~

100

200

20

12

'"
~

10 r--

'"

0.6

1\

10

!;j
oj
8
~

>

100

200

500

/

0.4

-----

TJ = 25°C

I
f--

0.2

o

20

IC. COLLECTOR CURRENT (AMPS)

I

14

>

0

U

IC~18 = ~O

16

~ 08

VCE = 300 V

50

1.8

0

50

20

50

FIGURE 4 - COLLECTOR SATURATION REGION

0

10

20

20

100

5.0
5.0

10

Ic. COLLECTOR CURRENT (AMPS)

DC CURRENT GAIN

~~ = 25~C

200

1

I\.

CI

50

:c

I'VCE = 2.0 V

'-'

.It

'"!5
..,IE::>

IIII

~C~ ~ll0 V r-

215O~

z

/V

100

DC CURRENT GAIN

LL

TJ = 100°C

-I III

I
5.0

10

20

50

IC. COLLECTOR CURRENT (AMPS)

1-614

100

200

MJ10101, MJ10102

III

TYPICAL ELECTRICAL CHARACTERISTICS (continued)
FIGURE 6 --- EMITTER-COLLECTOR DIODE
FORWARD VOLTAGE

FIGURE 5 --- BASE-EMITTER SATURATION VOLTAGE
2.6

~

f--f----

2.6

I~II~ l iol+--+--+--+-+-++++f+--+h---

/
f--+-++++++f---+-+-+---+---b+-+-t+h.44-1

~

~ 2.2

;;;

'l

...

~

.6
..
~

>

V
J

TJ = 25°C

2.0

/

1.8

1.6

~ 1.4
c
~ 1.2
c

r

14

II

!::l
~ 2.2

~

~. 18L-.----f--_++++++~_+ TJ=2~~

::

II

in 2.4

j...-- .......

~ 1.0

t-

I"-

~ 0.8

I

1.0
2.0

50

10

0.6

50

20

V

100

5.0

2.0

200

10

20

50

100

200

IF. FORWARD CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

TYPICAL SWITCHING CHARACTERISTICS
FIGURE 8 --- INDUCTIVE SWITCHING TIMES

FIGURE 7 --- INDUCTIVE SWITCHING MEASUREMENTS

./
'c .........

--

5.0

'C~

i--"'"

I

~CEM

1'\

V
VCE

\

-- --\- -- --- -- -.-

---

.........

\.

"-

~

'"

10"0...... 1--ICM
2%lc

10% VCEM
90%"81

~

~

4.0

Ir\l~1 ~ttl- f-.',,-

f-- f---I sli

I---. f--1c ---\

'S- f-

Vclamp

90% VCEM A1\90% 'CM

1.0

-

............

.......

r-1""'- ~ r-i'..... I'--.....
-....... ..::::- f..-

Isv @ 100°C

~

Isv
ie @ 100 0

Ie @ 25°C

o

o

1.0

~ 25°C

d-

1

6.0
2.0
3.0
4.0
5.0
VBE(oit). BASE·EMITTER VOLTAGE (VOLTS)

7.080

TIME

FIGURE 10 --- TURN-OFF SWITCHING TIMES

FIGURE 9 --- TURN-ON SWITCHING TIMES

2. 0

0
VCC = 250 V
iC/iB = 10
RBE=10n
TJ = 25°C

1. 0

O. 5

]7

5. 0
3. 0

~

;;; 2.0

.=,

IrV

~

2",
1

t-

r-......

0.0 5

0.02
2.0

-

o. 5

10

20

If

O. 3

Id

5.0

.:...

1. 0

.;

~

O. 2

V

t50

100

O. 1
200

20

Ie. COLLECTOR CURRENT (AMPS)

1-615

5.0

10
20
50
IC. COLLECTOR CURRENT (AMPS)

100

200

MJ10101, MJ10102

TABLE 1 - RBSOA AND INDUCTIVE SWITCHING DRIVER SCHEMATIC

r-~r-------r------i/

OJ

RESISTIVE

RBSOA AND INDUCTIVE SWITCHING

VCEOlou.}

$WITCHING
TURN ON TIME

DRIVER SCHEMATIC

.

Z
.... 0

~~
8

HP214

IC=250mA

~

181 adJusted to

1OIolF

IN

-3s"0..F
50
__+-____________ ______-,
PW Vaned to Attain

~

n
+

PG

-z

obtsin the forced
hFE deSIred

TURN-OFF TIME
Use inductIve sWitching

p0051lF

LcoU=10mHVCC=10V

CirCUli 8S the Input to

20jJF
+

1-

~

the reSIstive test CirCUlI

1000

MTM14N05

Reoll = 0.7 n

-Voff
Dnve

Vcl amp :: VCEO(sus)

INDUCTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

Vee= 250 V
Rl=26fl
Pulse WIdth:: 25 IJs

RESISTIVE TEST CIRCUIT

'I Adjusted to
Obtain Ie
Lcoll(ICM)

'1-

Vee
Leoll (ICMI

'1""

Vclamp

Test EqUipment
Scope - TektroniX
475 or EqUivalent

"Adjust - V such that VBEloff) = 5 V except as nlquired for RBSOA IFigure 14}.

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and motor controls, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching ti~e. For this reason~ the following
new terms have been defined.

An enlarged portion of the inductive switching waveform

is shown in Figure 7 to aid on the visual identity of
these terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 VCClc(tclf
In general, trv + tfi = tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user-oriented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsv) which are
guaranteed at 100°C.

FIGURE 11 - PEAK REVERSE BASE CURRENT

FIGURE 12 - REVERSE RECOVERY WAVEFORM

tsv~ Voltage Storage Time, 90% 181 to 10 % VCEM
trv ~ Voltage Rise Time, 10-90% VCEM
tfi ~ Current Fall Time, 90-10% ICM
tti ~ Current Tail, 10-2% ICM
te = Crossover Time, 10% VCEM to 10% ICM

30
27

...:;;

,./

in 24
~

.
t-

z

~

:::>
<.>
~

~

'"t

...- ...-

21
18

/'"

15
12
9.0

.... V

./

/"

';6.0 V

lC=100A
IBI = 3.3 A
TJ = 25°C -

-

3.0

o
o

1.0

2.0
3.0
4.0
5.0
6.0
VBEloff), BASE·EMITTER VOLTAGE (VOLTSI

7.0

8.0

1-616

MJ10101, MJ10102

The Safe Operating Area figures shown in Figures 13 and 14
are spacified torthese devices under the test conditions shown.

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 13 may be found
at any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 20.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 13 - MAXIMUM RATED FORWARD BIAS,
SAFE OPERATING AREA

300
150

10!,s
W,
(Tum·On Switching, m=f

S.

Ia

5.0

13'"

1.0

de

MJ10l02
MJ10l0l

1D

~

~

=
=

8

- -Current limit
--Thermal limit @TC- 25°C
-(Single Pulse,

0.1 ~
0.03
1.0

Second Breakdown limit

2.0

5.0

10

20

50

100

200

450

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS,

REVERSE BIAS
For inductive loads, high voltage and high current"
must be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. Thiscan be accomplished by several means such
as active clamping, RC s~ubbing, load line shaping, eic.
The safe level for these devices is specified as Reverse-Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse-biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 14
gives the RBSOA characteristics.

FIGURE 14 - MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA (RBSOAI

300

~

:... !-RBE -10 n

:IE 250

...1!iS.

~ 200

::>
<.>

VBE(off,
: 5.0 V

-

-

25°C.-;;TJ<:; 100°C

0
'"

t; 150

~

0

<.>

...::!i'"

~

100

\

50

o
o

'-.1\.

~

OVERLOAD SAFE OPERATING AREA
b

100
400
200
300
500
VCE, PEAK COLLECTOR·EMITTER VOLTAGE (VOLTS,

The forward-bias safe operating area (FBSOA) specification given in Figure 13 adequately describes transistor
capability for normal repetitive operation. When short circuit or fault conditions occur, these transistor specifications
are not always adequate. A specification called overload
safe operating area (OlSOA) has been developed to describe
the transistor's ability to survive under fault conditions.
OlSOA is specified under two types of conditions.

600

FIGURE 15 - POWER DERATING
100

~~

"

TYPE IOLSOA

!'--.

I"'"

Second Breakdown

Derating

..............

"-

Thermal
Derating

............

'"

...... r-....,
.......

f""...

......

"
o
o

40

-

80
120
TC, CASE TEMPERATURE 1°C)

160

" "'"

200

Type I OlSOA applies when maximum collector current
is limited and known. Agood example is a circuit where an
inductor is inserted between the transistor and the bus,
which limits the rate of rise of collector currentto a known
value. If the transistor is then turned off within a specified
amount oltime, the magnitude of collector current is also
known. Figure 16 depicts the Type I OlSOA rating for the
MJ1 01 01. Maximum allowable collector-emitter voltage
versus collector current is plotted for several pulse widths.
(Pulse width is defined as the time lag between the fault
condition and the removal of base drive.) Storage time of
the transistor has been factored into the curve. Therefore,
with bus voltage and maximum collector current known,
(continued on back pagel

1-617

MJ10101. MJ10102

OVERLOAD CHARACTERISTICS
FIGURE 17 - OVERLOAD SAFE OPERATING AREA
TYPE II (OLSOAI

FIGURE 16 - OVERLOAD SAFE OPERATING AREA
TYPE I (OLSOAI

10

500

~

1\ \

400

S-

1300

TC

= 25°C

a
'"

ti

200

~

8

1\ \
\-0\ -201"
\ :--- 101"
\\
.\
\\

r--

~
:;;

~

...S-

Ia

\

\
\

~

~,

o
o

5.0

::1i
.!!>

~

.!d> 100

TC = 25°C
tp = 101"

~

1DO
200
300
400
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI

\\.

1.0

~

o
o

500

~I:oo.

100
200
300
400
VCE. COLLECTOR-EMmER VOLTAGE (VOLTSI

500

FIGURE 18- OVERLOAD SOA TEST CIRCUIT
TYPE I

N_s:
• VCE=VCC+VSE
•

FIGURE 19 - OVERLOAD SOA TEST CIRCUIT
TYPE II

Adjust pulsed current source

for desired IC. tp
rM~;~YRcl~---------l

I
IL
Notes:

+6V

• Rep Rate"; 10 Hz
• Adjust Rl for desired IS
• Pulse delay time at the
generator determines pulse
width at the device under test

680pF

39

50

15

1-618

N.O.

~

I
______ JI
N.C

t:' 1
VCC

MJ10101, MJ10102

SAFE OPERATING AREA INFORMATION (continued)

TYPE I OLSOA (continued)

shown in Figure 17, is measured in the circuit shown in
Figure 19, and measurement is made as follows: Base
current is applied while the collector is open, allowing a
highly overdriven saturated condition. Next, a stiff voltage
source is applied to the collector. The rising voltage at the
collector of the transistor triggers a delay function. At the
end of this delay, base drive is removed. The delay time is
the variable on the Type II OlSOAcurve. The storage time
of the transistor is thereby factored into the rating.
There are several additional aspects to be considered
regarding OlSOA. The first consideration is that OlSOA is
strictly a NONREPETITIVE rating. It is intended to describe
the survivability of the transistor during an accidental overload and is not intended to deScribe a stress level which
can be sustained indefinitely. The number..,f nonrepetitive
faults for which OlSOA is defined for the MJ10l0l is
100 occurrences. Another factor is the form of turn-off
bias. For the MJl 01 01, turn-off bias has relatively linle
effect on its OlSOA capability. This observation is valid
from 'B2 = 0 (soft} to VBE(off} = 5 V (stiff}.
OLSOA is subject to the !!Sme derating with temperature
as normal FBSOA. The second breakdown derating curve is
applied to the allowable current atany given voltage, using
the same procedure that is followed with pulsed FBSOA.

Figure 16 defines the maximum time which can be allowed
for fault detection and shutdown of base drive.
Type I OlSOA is measured in a common-base circuit
(Figure 18} which allows precise definition of collectoremitter voltage and collector current. This is the same
circuit that is used to measure forward-bias safe operating

area.
TYPE 11 OLSOA
Type II OLSOA applies when maximum collector current
is not limited by circuit design, but is limited only by the
gain ofthe transistor. Therefore, collector current does not
appear on the Type II OlSOA curve. This curve defines a
safe region of operation from the information that is usually
available to the designer.
This information is normally base drive, bus voltage and
time. In terms of the OlSOAcurve, bus voltage is assumed
to be worst-case collector-emitter voltage, and time is
defined to be the same pulse width that was described for
Type I OLSOA. Using these variables, maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus
determined by the circuit parameters. Type II OlSOA, as

FIGURE 20 - THERMAL RESPONSE

~

10

~
~
o 05

0=0.5
ReJCIII- rIll ReJC
ReJC • 0.25 °C/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AIl\
TJlpkl - TC = Plpkl ReJCll1

~

w
u

~

02

0=02

~O.II.I
0=01



12

0

"\.

'"
~

100

~

50
VCE=150V
20

20

50

100

200

500

1.0

0.6

t5:

0.2

1000

Ie. COLLECTOR CURRENT (AMPS I

-

TJ = 25°C

r--

TJ = 100°C

0.4

o

2.0

V
../

-

"'-1--

08

B
~
:>

10
10

50

20

'-'

c

20

Ic. COLLECTOR CURRENT (AMPS)

500

200

r\

1/

5.0 V

1000

~

VCE=~ ~

I'

1/

IC. COLLECTOR CURRENT (AMPS)

FIGURE 3 -

~

,/

~ 100

I I I
I I I

5.0

VCE=10V_

.-:::

200

'-'
c

VCE
0/
40
2.0

r-- r- -IJ =1 25oC

z

/V

c

'"
15

DC CURRENT GAIN

800

II
II
5.0

10

20

50

IC. COLLECTOR CURRENT lAMPS)

1-622

100

200

MJ10200

TYPICAL ELECTRICAL CHARACTERISTICS Icontinued)
FIGURE 6 - EMITTER-COLLECTOR DIODE
FORWARD VOLTAGE

FIGURE 5 - BASE-EMITTER SATURATION VOLTAGE

3.0

~

15
II

0

;::. 2.6

~

I

~

0

"'-

'"

~>

~

i!5
a:
0

A

2.2

1.8

~ 1.4

8

'"

'l

TJ; 25°C

I--

I--

_r-

_f_r-

5.0

~

09

0
0

a
!i

~

1.0
2.0

1.1

~

TJ; 100°C

10
20
50
IC. COLLECTOR CURRENT lAMPS)

100

1 3 r--- ' -

...'"g
>
~

/,V

t;

II I

in

- r- I~/I~ l J51

V

V

-

~

I-I-- I-

0.7

0.5
2.0

200

T~ ~ 2~Jcl

5.0

10

20

50

100

200

IF. FORWARD CURRENT lAMPS)

TYPICAL SWITCHING CHARACTERISTICS
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

. / i-"""

./
f-

Ie"""'"

VCEM

,,\

I

II :J

Vctamp

-

1,,1f[~lf'-I-II'-

3

---J rIc --\ ~
VCE
'B-

-

90% 'Bl

,

---

- --\- -- -- -

-....-

;::

~

HI% .....
'CM

100VCEM

60
4.0

le@ 100°C

le@ 25°C

I

o

01

02

0.5

~ 0.2

o. 1

......

......

50

10

10

20

50

100

10
IS

5.0

3

:g

~

V

20

;::

10

,./
./

V
VCC;150V=
lC/lS - 25
RSE; 10 n _
TJ; 25°C -

=

If

0.5

Id

5.0

20

FIGURE 10 - TURN-OFF SWITCHING TIMES

I,

---

0.05
0.03
2.0

20

20

0.5

""-

10

RSE. SASE-EMITTER RESISTANCE (OHMS)

"-

0.3

i-'

20

- -

FIGURE 9 - TYPICAL TURN-ON SWITCHING TIMES
3.0
VCC; 150V
2.0
IC/ls; 25
RSE;10n
1.0
TJ; 25°C

:e

..-

~Tc

TIME

!

Isv @ 25°C

V'

V-

:g

"-

:/

J.+ttr

IC; 200 A
VCEM; 150 V
lSI; 5 5 A

80 -

A[\90% ICM

90% VCEM

1-- 1"

-

FIGURE 8 - TYPICAL INDUCTIVE SWITCHING TIMES
10
Isv @ 100oc'II j..

ICI\1_ _

50

100

200

Ic. COLLECTOR CURRENT lAMPS)

50

10

20

50

IC. COLLECTOR CURRENT (AMPS)

1-623

100

200

MJ10200

-

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
veEOI",,'

"IIliTIVE

RBSOA AND INDUCTIVE SWITCHING

,on

IWITCH_
TURN ON TIME

OAIVERSCHEMATIC

.,

200n

~,

ForinduCIIYIIlo8dspulsewldth
to

s~

:~

IS adJusted too!:llsInspee,',edIe

01~,±

~

loon

to

~'

-~
U

10pF

lIoo~' ~~

PW V.,Htd to Attain

0003

go.~.v

de",.. '.,
R!0OO5

~
-

""'2N3762

~

"II

~

!;
U>

'lice'"

10 V

LeoH = 3.0pH
VCC"'20V

ReOd '" 0 7 n
Vdamp· VCIEOhu.'

INDUCTIVE TEST CIRCUIT

~.

:;

r
I
I
I

1

U

lN4937

!IE
u

Input

S. . Above for

,

or

Equiv.tent
V clamp _~_

Detailed CondItion.

.,;.

l

'CM __
'CLE2l=

,RcOII

II

I

VCE

JVCC

r

VCC· ,5OV
RL'" .750

RESISTIVE TEST CIRCUIT

~Iilmped

Ie

'r-1]
"
"L

L eol' (leM)

u:-n

~ vcc

'l

Leod OeM'
'2~---

"Clwnp

___ -L...

',m.

Adju.~to

t, "'---vee-

-.Vel amp

VCEM

_'tchln,

...tclrcuit.

Pul. Width .. 26 II'

Obtilin

1--,,- "t-

I Leoil

L J

,"duetl~

CIrcuit .. the input to
th.rft"tl~

OUTPUT WAVEFORMS

b~S')
Q.1 n

"Adjust - V such that VBEloff)

u ..

"

I,

..
......
..

TURN·OFF TIME

,
Ion

Lcoi'- 10 mH

hFE dellNd

MTM1224

Ie· 210 mA

....a'!l

la, _jus" to
ottUm m. forced

~

t-

lOOn

,.@r:

+30 V

AdlustRl
loobta,"

Test EqUipment
Scope - TektronIx
475 or EqUIvalent

1-',-/

= 5 V ••copt as required for RBSOA IFigure 14).
SWITCHING TIMES NOTE
is shown in Figure 7 to aid on the visual identity of
these terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 Vcclc(tclf
In general, trv + tfi = tc· However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for design.ers. However, for designers of high
frequency converter circuits, the user-oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and ts v) which are
guaranteed at 100°C.

In resistive switching Circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and motor controls, current and voltage
waveforms are not in phase. Therefore, separate measure. ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10 % VCEM
trv = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
tti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform

FIGURE 12 - THERMAL RESPONSE

FIGURE 11 - TYPICAL PEAK REVERSE BASE CURRENT
10

IC~200,.' - IBI = 5.5 A
VCEM=150V- -

~ 8.0

::e

....~

i!i 6.0

ffi

1.0

'"
~

0.5

'='i

1\

~

a
~

'" 4.0
;§
~

.; 2.0
o
o

TJ = 25°C

\
\

I

0-0.5

RUCItl- rlt! ReJC
RUC • 0.25 °C/W Max
D CURVES APPLY FDR POWER
PULSE TRAIN SHOWN
READ TIME AI "
TJlpk)- TC' Plpk) ReJCII)
Plpkl

:!5.
~

~ 0.2

--

11l
~

-

~

\~

400

u=>

~

tp= 20

r:::s: K~I

200

o
o

6.0

g§

..... tp = 10~,

~ r-..

o

~

TC =125oC

tiS

,-' tp=5.0~S

'\ ~

~

-

8.0

:;

'"'"5>

~,_

I

100
200
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

4.0

~

2.0
tp=20~'-

o

'1

1

o

250

..

/ tp =5.0I"- f--

~

~

100

200

250

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 18 - OVERLOAD SOA TEST CIRCUIT
TYPE I

Notes:
• VeE = Vee + VeE

FIGURE 19 - OVERLOAD SOA TEST CIRCUIT
TYPE II

• Adjust pulsed current source

for desired

Ie. tp

rM;r~';YReTav---------l

I
IL

NO.

I

N.e

______ JI

Vee
Notes:

+6V

• Rep Rate';:; 10 Hz
• Adjust R1 for desired Ie
• Pulse delay time at the

39

50

generator determines pulse
width at the device under test

n

10V/10~s

Out

50

+-.......H

MJE15028

1k

15

2N2322

1-626

I

MJ10200

SAFE OPERATING AREA INFORMATION (continued)
TYPE I OlSOA (continued)

shown in Figure 17, is measured in the circuit shown in
Figure 19, and measurement is made as follows: Base
current is applied while the collector is open, allowing a
highly overdriven saturated condition. Next, a stiff voltage
source is applied to the collector. The risi ng voltage althe
collector of the transistor triggers a delay function. At the
end of this delay, base drive is removed. The delay time is
the variable on the Type II OLSOA curve. The storage time
of the transistor is thereby factored into the rating.
There are several additional aspects to be considered
regarding OLSOA. The first consideration is that OLSOA is
strictly a NONREPETITIVE rating. It is intended to describe
the survivability ofthetransistor during an accidental overload and. is not intended to describe a stress level which
can be sustained indefinitely. The number of nonrepetitive
faults for which OLSOA is defined for the MJ10200 is
100 occurrences. Another factor is the form of turn-off
bias. For the MJ10200, turn-off bias has relatively little
effect on its OLSOA capability. This observation is valid
from IB2 = 0 (soft) to VBE(off) = 5 V (stiff).
OLSOA is subject to the same derating with temperature
as normal FBSOA. The second breakdown derating curve is
applied to the allowable current at any given voltage, using
the same procedure that is followed with pulsed FBSOA.

Figure 16 defines the maximum time which can be allowed
for fault detection and shutdown of base drive.
Type I OLSOA is measured in a common-base circuit
(Figure 18) which a.llows precise definition of collectoremitter voltage and collector current. This is the same
circuitthat is used to measure forward-bias safe operating
area.

TYPE" OlSOA
Type II OLSOAapplies when maximum collector current
is not limited by circuit design, but is limited only by the
gain ofthe transistor. Therefore, collector current does not
appear on the Type II OLSOA curve. This curve defines a
safe region of operation from the information that is usually
available to the designer.
This information is normally base drive, bus voltage and
time. In terms ofthe OLSOAcurve, bus voltage is assumed
to be worst-case collector-emitter voltage, and time is
defined to bethe same pulse width that was described for
Type I OLSOA. Using these variables, maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus
determined by the circuit parameters. Type II OLSOA, as

1-627

MJI0201
MJI0202

®

MOTOROLA

Desig-ner's Data Sheet
200 AMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTOR

50 KVA HIGH SPEED SvVlTCHMODE TRANSISTOR
200-Ampere operating Current

200 and 250 VOLTS
500 WATTS

The MJ10201 Darlington transistor is designed for industrial
service under practical operating environments requiring fast
switching speed for highly efficient systems operating at high
frequency such as inverters, PWM contro'llers a nd other high
frequency system operating from 120 V lines or batteries.

Designer". Data .for

..Worst-C ..... Condition.
The Designer's Data Sheet permits
, the design of most circuits entirely from
. the information presented. Limit datarepresenting device characteristics
boundaries-are given to facHitate
"worst-case" design .

.'W

,1"

(p

hL~
~r
'"
'"~

"

>-

'"'
B

~
'"
'"

~
8

VCE=150V
20

18

IC/l~ = ~5

16
14

./

12
10

-

TJ = 25°C

r--

TJ

20

50

100

200

500

1000

IC. COLLECTOR CURRENT (AMPS)

-

08
06

200

V
.-'

04

II

o

20

II
50

10

20

50

IC. COLLECTOR CURRENT (AMPS)

1-630

:/

100°C

w 02

~

10
10

100

20

500

200

50

FIGURE 4 - COLLECTOR SATURATION REGION

1000

~

20

IC. COLLECTOR CURRENT (AMPS)

100

200

MJ10201, MJ10202

TYPICAL ELECTRICAL CHARACTERISTICS (continued)
FIGURE 6 - EMITTER-COLLECTOR DIODE
FORWARD VOLTAGE

FIGURE 5 - BASE-EMITTER SATURATION VOLTAGE
3,0

;;;

~

2.6 r - r-

2. B
4

II I
I~/I~ l J51

0

~

~
~ 2.2

'"
~~
..,.

A

-

~

~ 1.4

~

1.0
2,0

4

,....,..-

...-f-

~

".'

2

/r-"

0

TJ= 1000C

I--'

8,..6

5a

10

20

100

50

"

6

'l

TJ = 25°C

V

8

/X

1.8

I
TJ = 25°C

2

10
20
50
IF. FORWARD CURRENT (AMPS)

5.0

200

IC. COLLECTOR CURRENT lAMPS)

200

100

TYPICAL SWITCHING CHARACTERISTICS
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC~_

I

, , / f-"'"

L
,C/

,

's-

-

a

VCEM

~v~100J

Vclamp

1 90% 'CM
I" /1 ~I"_f-II'-

B,

90% VCEM

I- r--- 1sv

---. "-Ic~ -

---\- -- -- --

~

11.% ......
'eM r-~

10% VCEM

90% lSI

oJ

-- -

-

o \

4,

2,

'"

I'-..

le@26 0

-

O~ @IOOoC

a

1.0

2,0

FIGURE 9 - TYPICAL TURN-ON SWITCHING TIMES

1.0

1. 0==

.=,

:iii

03

0.2
0,1

"'-

r--.

20

B,O

).0

8,0

g,O

10

I

v~cl-\W

I!

VBE( off) = 5,0 V
.IC/IS = 40

-

I-

",

I-'

10

5,0

0, 2 ,
,I

Id

50

4,0

-

IIIII

I,

-

~

0,05

0.03
2,0

~
c::::

=~
5==

... 0,5

:

3,0

--

FIGURE 10 - TURN-OFF SWITCHING TIMES

3, a

VCC= 150V
lells = 25
RSE= 10!l
TJ - 25°C

"-

-

IS2. REVERSE BASE CURRENT (AMPS)

TIME

30
2,0

°C

f'-..: ""'-..

~~

~

~

IC~2001

_
lSI = 5.0 A
VCEM = 100 V-

]: a. O~
~1.v@2

"-

/
VCE

FIGURE 8 - INDUCTIVE SWITCHING TIMES

Dr<

/
If

0,0 5
50

lao

0,0 3

2,0

200

IC. COLLECTOR CURRENT (AMPS)

1-631

5,0

2
10
IC. COLLECTOR CURRENT (A)

lao

20

MJ10201, MJ10202

TABLE 1 - RBSOA AND INDUCTIVE SWITCHING DRIVER SCHEMATIC
VCEOlsusl

lIB

RESISTIVE

RBSOA AND INDUCTIVE SWITCHING

SWITCHING
TURN ON TIME

DRIVER SCHEMATIC

PG

IB~:

•

Ie 1 adjusted to
obtain the forced
hFE deSired

INJilO jJ F

HP214

-380...J

TURN-OFF TIME

50 p005"F

PW Vaned to Attain

'C=250mA

Use inductive sWlIchrng
ClfcUitas Ihe Input to

20/olF

-=L COII = 10mHVCC'" loV

Leoll'" 3 O,..H

Reoll = 071!

VCC"'20V

the reSistive lest CirculI

• ,1000
MTM14N05
-Voff
DTive

Vclamp = VCEOlsus)

Pulse Width = 25

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

Vee'" 150V
RL =07Sn

,..&

RESISTIVE TEST CIRCUIT
" Adjusted to
Obtam Ie

Lcoll(JCMJ

" " ' ----veeLeod (leM)
"

-".-

Vclamp
Test EQUipment

Scope - TektroniX
475 or EqUivalent

"Adjust - V such that VBE(off)

= 5 V except as required for RBSOA

(Figure 141-

SWITCHING TIMES NOTE
IS shown 10 Figure 7 to aid on the visual Identity of
these terms.
For the deSigner. there IS minimal sWitching loss
dUring storage time and the predominant switching
power losses occur during the crossover tnterval and can
be obtained uStng the standard equation from AN-222A:
PSWT = 1/2 Vcclc{tdf
In general. trv + tfr = tc. However, at lower test currents
thiS relationship may not be valid.
As IS common With most switchmg tranSistors, resistive
switching IS speCIfied at 25°C and has become a benchmark for designers. However. for designers of high
frequency converter circuits. the user-oriented specifications which make thiS a "SWITCHMODE" transistor are
the tnductive sWltchtng speeds ftc and tsvl which are
guaranteed at 100°C.

In resistive sWitching CirCUitS. rise. fall. and storage
umes have been defined and apply to both current and
voltage waveforms since they are In phase. However.
for Inductive (oads which are common to SWITCHMODE
power supplies and motor controls. current and voltage
waveforms are not In phase. Therefore. separate measurements must be made on each waveform to determine
the total switching time. For thiS reason. the followtng
new lerms have been deftned.
tsv = Voltage Storage Time. 90% IS1 to 10 % VCEM
trv = Voltage Rise Time. 10-90%'VCEM
tfi = Current Fall Time. 90-10% ICM
ttl = Current Tail. 10-2% ICM
tc = Crossover Time. 10% VCEM to 10% ICM
An enlarged portion of the tnductrve sWitching waveform

FIGURE 11 - PEAK REVERSE BASE CURRENT

0
7

t rr @ if = 200 A @ VBE

/

4

[....../

1

8

,/"

5

/""

V

.;..V

2
0

FIGURE 12 - REVERSE RECOVERY WAVEFORM

./

Ie = 200 A_
IBI = 5.5 A
TJ = 25°e -

0
3. 0
00

1.0

.0

3.0

4.0

5.0

6.0

7.0

8.0

VBE(offl BASE·EMITTER VOLTAGE (VOLTSI

1-632

0.5/Ls/Ojy

= -5.0 V

MJ10201, MJ10202

SAFE OPERATING AREA INFORMATION

The Safe Operating Area figures shown in Figures 13 and 14
are.specified for these devices under the test conditions shown.

FORWARD BIAS

FIGURE 13 - MAXIMUM RATED FORWARD-BIAS
SAFE OPERATING AREA (FBSOA)
10 ~s
"
(Turn·On SWitching)::::

300
=

ffi
c

i'--

Second Breakdown
Derating

...........

t'--.

'"~

t--....

"' """-

~ 20

o
o

......

"- ......

40

40

Theforward-bias safe operating area (FBSOA) specification given in Figure 13 adequately describes transistor
capability for normal repetitive operation. When short circuit or fault conditions occur, these transistor specifications
are not always adequate. A specification called overload
safe operating area (OlSOA) has been developed to describe
the transistor's ability to survive under fault conditions.
OlSOA is specified under two types of conditions.

80
120
TC. CASE TEMPERATURE lOCI

160

-

.............

...........
200

Type I OlSOAapplieswhen maximum collector current
is limited and known. Agood example isa circuitwherean
inductor is inserted between the transistor and the bus,
which limits the rate of rise of collector current to a known
value. lithe transistor is then turned off within a specified
amount oftime, the magnitude of collector current is also
known. Figure 16 depicts the Type I OlSOA rating for the
devices. Maximum allowable collector-emitter voltage
versus collector current is plotted for several pulse widths.
(Pulse width is defined as the time lag between the fault
condition and the removal of base drive.) Storage time of
the transistor has been factored into the curve. Therefore,
with bus voltage a nd maxi m um collector cu rre nt known,
(continued on back page)

1-633

ID

MJ10201, MJ10202

SAFE OPERATING AREA INFORMATION (continued)
TYPE I OlSOA (continued)

shown in Figure 17, is measured in the circuit shown In
Figure 19, and measurement IS made as follows: Base
current is applied while the collector is open, allowing a
highly overdriven saturated condition. Next, a stiff voltage
source is applied to the collector. The rising voltage at the
collector of the transistor triggers a delay function. At the
end of this delay, base drive is removed. The delay time IS
the variable on the Type II OlSOA curve. The storage time
of the transistor is thereby factored into the rating.
There are several additional aspects to be considered
regarding OlSOA. The first consideration is that OlSOA is
strictly a NONREPETITIVE rating. It is intended to describe
the survivabilityofthe transistor during an accidental overload and is not intended to describe a stress level which
can be sustained indefinitely. The number of nonrepetitive
faults for which OlSOA is defined for the devices are 100
occurrences. Another factor is the form of turn-off bias.
For the devices, turn-off bias has relatively little effect on
its OlSOA capability. This observation is valid from IB2 =0
(soft) to VBE(off) = 5 V (stiff).
OlSOA is subjectto the same derating with temperature
as normal FBSOA. The second breakdown derating curve is
applied to the allowable current at any given voltage, using
the same procedure that is followed with pulsed FBSOA.

Figure 16 defines the maximum time whIch can be allowed
for fault detection and shutdown of base drive.
Type I OlSOA is measured in a common-base circuit
(Figure 18) which allows precise definition of collectoremitter voltage and collector current. This IS the same
circuit that is used to measure forward-bias safe operating
area.

TYPE II OlSOA
Type II OlSOA applies when maximum collector current
is not limited by circuit design, but is limited only by the
gain of the transistor. Therefore, collector current does not
appear on the Type II OlSOA curve. This curve defines a
safe region of operation from the information that is usually
available to the designer.
This information is normally base drive, bus voltage and
time. In terms of the OlSOA curve, bus voltage is assumed
to be worst-case collector-emitter voltage, and time is
defined to be the same pulse width that was described for
Type I OlSOA. Using these variables, maximum collectoremitter voltage versus base drive is plotted for several
values of pulse width. A safe region of operation is thus
determined by the circuit parameters. Type II OlSOA. as

FIGURE 20 - THERMAL RESPONSE

§"

~

1.0
D = 0.5

~ 0.5

.~.)

c

~

t:j

z

~

~

0.2

0=0.2

'alllllmi
0=0.1

0.1

iO.05~

9JC

R9JC =0.25 °C/W Ma,
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME A. '1
TJlpk)- Te = Plpk) RBJCI.)
Pf.JlJL

:;;

~002

~~-1

~

~UTY CYCLE, 0 ='1/12

~ 0 01'-.0.L1L.LWlJIILl-'-'..LLLW1.':.Ol..L..LJJ."'":10"""--:':10:-:0--:-:1O:-:O:-O..::....-I::O~OOO
I, TIME (m.)

1-635

PNP

MJII011, MJII013,
MJI1015

®

MOTOROLA

NPN

lIB

MJII012, MJII014,
MJI1016
HIGH-CURRENT COMPLEMENTARY
SILICON TRANSISTORS
30 AMPERE

· .. for use as output devices in complementary general purpose
amplifier applications.

DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON

= 1000 (Min) @ IC = 20 Adc

•

High DC Current Gain - hFE

•

Monolithic Construction with Built-In Base-Emitter
Shunt Resistor

•

Junction Temperature to +200 o C

60-120 VOLTS
200 WATTS

MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

VCEO

MJll0ll MJll013 MJll015
MJll012 MJll014 MJll016
60
t20
90

Unit

Vdc

Collector-Base Voltage

Vce

Emitter-Base Voltage

VEe

5

Vdc

Collector Current

Ie

30

Adc

Base Current

Ie

Total Device Dlsslpation@TC=2SoC
Derate above 25°C @ T C = 1DoDe

PD

1
200
1.15

Watts
WloC

TJ,Tstg

-551o +200

°c

Operating and Storage Junction

60

120

90

Vdc

Adc

Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

Svmbol
ROJC

Maximum Lead Temperature for

Soldering Purposes for

~

Unit
°C/W
°c

Max
0.87
275

TL

10 Seconds.

FIGURE 1 -DARLINGTON CIRCUIT SCHEMATIC
Collector

PNP

NPN

rC
o---r

---,
r------I

MJ11014

MJll015

:.-(

MJll016

Base

I

I
I
I
I
I

o---t-

i~8~
L _______

I
__ .JI

MJlI012

Base

-

Collector

MJ11011
MJll013

r - - - - - - - ---,
I
:

I

I
I

I
1
I
1

1;[
i
= S.Ok

=40

__ .JI

L _______

0
EmItter

Emitter

1-636

STYLE 1
MILLIMETERS
INCHES
PIN 1. BASE
DIM MIN MAX
MIN MAX
2. EMITTER
A
CASE COLLECTOR B
21.08
0.830
C 6.35
7.62 0.250 0.300
0
0.97
109 0.038 0.043
1.78 0.055 0.070
E 1.40
F 29.90 30.40 1.177 1.197
G 10.67 11.18 0.420 0.440
H 5.33
5.59 0.210 0220
J 16.64 17.15 0.655 0.675
K 11.18 12.19 0.440 0.4BO
Q
3.81
4.19 0.150
16
R
26.67
1.050
3.05 0.100 0.120
U
2.54

-

CASE.l-04
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO·3 OUTLINE SHALL APPLY.

MJ11011, MJ11013, MJ11015PNP/MJ11012, MJ11014, MJ11016NPN

..

ELECTRICAL CHARACTERISTICS (Te '" 2SoC unless otherwise noted)

I

Characteristic

M ••

Min

Symbol

Unit

OFF CHARACTERISTICS
Collector-Emitter BreakdOVl/n Voltage( 1)
(Ie" 100 mAde, Ie = 01

MJl lOll ,MJIIQ12
MJI1013,MJI1014
MJI1015,MJI1016

60
90
120

Collector Emitter Leakage Curfent
(VeE =
(VeE'"
(VeE '"'(VeE =

Vd,

BVCEO

mAde

leER

60 Vdc, AaE '" 1 k ohm)
90 Vdc, RaE'" 1 k ohm)
120 Vdc, RBE " 1 k ohm)
60 Vdc, AaE " 1 k ohm.

MJ110t l,MJI1012
MJI1013,MJI1Q14
MJI1015,MJI1016
MJI101',MJI1012

TC -" IS0oC)
(VeE =. 90 Vdc, AaE· 1 k ohm,
TC = 1S0oC)

MJI1013,MJll014

(VeE'" 120 Vdc, AaE" 1 k ohm,

MJI1Q15,MJI1Q16

TC = IS00C)
Emitter Cutoff Current
(VSE"" 5 Vdc, Ie '" OJ

Collector·Emilter Leakage Current
(VeE = 50 Vdc, 18 '" OJ
ON CHARACTERISTlCS(11
DC Current Gam
(Ie = 20 Adc, VeE'" 5 Vdc)
(Ie" 30 Adc, VeE ~ 5 Vdc)
Collector-EmItter Saturation Voltage
lie ~ 20 Adc, 18 '" 200 mAdcl
IIc '" 30 Adc, 18 = 300 mAdcJ
B-

I

5.

V

~

1111

a'"

/"

'"

VCE(sali

o

0,1

0.2

0,5

"/

!2
10

50

70

100

200

300

500 700 1.0 k

20

FIGURE 5 - ACTIVE REGION DC SAFE OPERATING AREA
0
0
0
5

2
1 -

o. 5

-

BONDING WIRE LIMITATION
- THERMAL LIMITATION @TC-150C
SECOND BREAKDOWN LIMITATION

~ ~:
8

VBE(sat)
I

30

f, FREOUENCY (kHz)

FIGURE 4 - "ON" VOLTAGES (1)

---

10 mAde

T2~OC

50

100

2
I
0.05

MJIIOll,MJllOI1
MJ11013, MJll014
MJllOI5, MJIIOl6

0.01
0.0 I
10

20

30

50

70

100

100

VCE, COLLECTOR EMlnER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)
There are two lImItations on the power handling ability of a
tranSistor' average junction temperature and secondary breakdown
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation. e.g; the transistor

1-637

must not be subjected to greater dissipation than the curves indicate
At high case temperatures, thermal limitations Will reduce the
power that can be handled to values less than the limitations im·
posed by secondary breakdown

PNP
NPN
MJ11017 MJ11018
MJ11019 MJ11020
MJ11021 MJ11022

®

MOTOROLA

III
16 AMPERE

DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON

COMPLEMENTARY DARLINGTON
SILICON POWER TRANSISTORS
· .. designed for use as general purpose amplifiers. low frequency
switching and motor control applications.

160.200.260 VOLTS
176 WATTS

• High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)
• Collector-Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) - MJll 018. 17
= 200 Vdc (Min) - MJll 020 .. 19
= 250 Vdc (Min) - MJll 022.21
•. Low Collector-Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ)@ IC = lOA
• Monolithic Construction

=44 V. IC =4.0 A. t =250 ms.

• 100% SOA Tested @ VCE

MAXIMUM RATINGS
Svmbol

MJll01S
MJll017

MJll020
MJll019

MJll022
MJll021

Unit

VeEO

ISO

200

250

Vdc

Collector·Bese Voltage

Vee

ISO

200

250

Vdc

Emitter-Base Voltage

VEe

5.0

Vdc

Ie

IS
30

Adc

Rating
Collector-Emitter Voltage

Collector Current Continuous Peak
8ase Current

Ie

0.5

Adc

Total Device Dissipation @ TC - 25°C

Po

175
1.16

W/oC

-65 to +175
-65 to +200

·e
·e

Derate Above 26°C
Operating and Storage Junction
Temperature Range

TJ
T.

,a

Watts

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle ~ 10%

STYLE 1
PIN 1. BASE
2. EMITIER
CASE COllECTOR

FIGURE 1 - POWER DERATING

~200
I-2'150

~

ill

~

100

DIM
A

•

~

'"

~

50

.........

~
25

50

75

100

125

i'-...

150

175

-

C
6.35
0
.97
1.40
E
F 29.90
G 10.67
H
5.33
J 16.64
K 11.18
Q 3.81
R
U
2.54

~ i'-.

C

MilLIMETERS
MIN MAX
21.
7.62
1.09
1.8
30.40
11.18
5.9
17.15
12.19
4.19
26.67
3.05

INCHES
MIN MAX
[20
O.
.05
1.177
[420
0.210
0.655
0.440
.15

-

0.100

0.830
.300
1.l!I3
0.070
1.197
[440
[22D
0.675
[480
0.165
1.050
0.120

CASE 1-04

200

TC. CASE TEMPERATURE (OCI

1-638

NOTES,
1. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TD·3 OUTLINE SHAll APPLY.

MJ11017, MJ11019, MJ11021 PNP, MJ11018, MJ11020, MJ11022 NPN

ELECTRICAL CHARACTERISTICS (TC: 25°C Unless Otherwise Noted)

I

Characteristics

Symbol

Min

Max

Unit

150
200
250

-

Vdc

OFF CHARACTERISTICS
Coliector·Emitter Sustaining Voltage (1)
MJll017, MJll01B
(IC=O.l Adc, le:O)
MJ11019, MJll020
MJll021, MJll022
Collector Cutoff Current
(VCE: 75, Ie: 0)
(VCE = 100, Ie: 0)
(VCE: 125, le:O)

VCEO(sus)

mAde

ICEO

-

1.0
1.0
1.0

-

0.5
5.0

400

15,000

MJll017, MJll01B
MJll 019, MJll 020
MJll021, MJll022

Collector Cutoff Current

mAde

ICEV

(VCE: Rated Vce, VBE(oll): 1.5 Vdc)
(VCE: Rated Vce, VeE(olf): 1.5 Vdc, TJ: 150°C)
Emitter Cutoff Current
(VeE: 5.0 Vdc, IC : 0)

IEeO

2.0

mAde

ON CHARACTERISTICS (1)

DC Current. Gain
(Ie = 10 Adc, VCE = 5.0 Vdc)
(lc = 15 Adc, VCE = 5.0 Vdc)

-

hFE
100

-

-

2.0
3.4

Collector-Emitter Saturation Voltage
(IC = 10 Adc, Ie = 100 rnA)
(IC = 15 Adc, IB : 150 mAl

VCE(sat)

Base-Emitter On Voltage
IC: 10 A, VCE: 5.0Vdc)

VSE(on)

-

Base-Emitter Saturation Voltage
(IC = 15 Adc, IS: 150 mAl

VSE(sat)

Magnitude of Common Emitter Small Signal Short Circuit
Forward Current Transfer Ratio
(lC: 10 Adc, VCE : 3.0 Vdc, f: 1.0 MHz)

[hIe]

Output Capacitance
(VCS: 10Vdc, IE:O,f:O.l MHz)
MJll01B, MJll020, MJll022
MJll017, MJll019, MJll021

Cob

Small·Signal Current Gain
(lC: 10 Adc, VCE: 3.0 Vdc, I: 1.0 kHz

hIe

Vdc

2.B

Vdc

-

3.8

Vdc

3.0

-

.-

DYNAMIC CHARACTERISTICS

pF

-

400
600

100

-

-

SWITCHING CHARACTERlS'nCS
Typical

Characteristics

Symbol

NPN

PNP

Unit

td
tr
ts
tf

150
1,2
4.4

75
0.5
2.7
2.5

ns
!,S
!,s
!,s

Oel~Tlme

Rise TIme
Storage Time
Fall Time
{1 jPulsed Test Pulse WIdth

(Vce = 100 V, Ie: 10 A, Ie = 100 mA
VSE(offl = 5.0 VI (See Figure 2.1

= 300 iJ,S,

Duty Cycle

~

IU.U

2%

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
Vee
RS & RC VARIED TO OBTAIN DESIRED CURR£NT LEVELS
01, MUST BE FAST RECQVERYTYPES, eg
MB053DO USED A.BOVE IS '" 100 rnA

MS06100 ust:o BElOWIB" !DOmA

l00V

RC

SCOPE

V2

A~if:X~d~~~-~__ 1~

"

VI

APPROX
-60V--f-+
Ir,lf",lOlls

+40V
251.1s

fortdalldtr,Ollsdlscollllecled
V2" 0

~Ild

DUTY CYCLE" I 0%
For NPN test cirCUit reverse diode and voltage polarities.

1-639

MJ11017, MJ11019, MJ11021 PNP, MJ11018, MJ11020, MJ11022 NPN

FIGURE 3 - THERMAL RESPONSE
7~D-0.5
5
.-0 ;0,.

3~ 0.2
!--

f - - 0.1

~

1~0.05

7~0.02
5
i.-- ~
~

i-"

PtrUl

~--J

R9JClt) , rll) R9JC
R9JC' 0.86°C/W Max
o CURVES APPLY FOR POWER

,t

DUTY CYCLE, D" ttit2

0.01

~~~SDE ~~~I~ISI~O~N

0.02 I-- SINGLE PULSE

I II

0.0 1
0.01

0.02 0.03

I

0.05

0.1

0.2

0.3

0.5

20

1.0

t,

3.0

I I II II
50

10

20

II

I

30

50

) I

100

200 300

500

TIME (msl

FIGURE 4 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA (FBSOAI

~
I-

I

a
~

f;j

FORWARD BIAS

,

in 30.0
!lE 20.0

10.0

1.0

m.

!oc

5.0

:::l

1. 0

o. 5

0.1';.- t--.5ms~

l<- t---

.0 ms

3.0
2.0

B

..... ... 1"'•
... ,

d~
TJ = 175°C
----Second Breakdown limit
---oBondmgW.rellmJt

...-----Thermal LlmltatlOn@Te=25°C
SlOglePulse

.!dJ O. 3
0.2

o
3.0

MJll017. MJll018->,,;
MJll019. MJll020
MJll021. MJ11022- I-5.0 7.0 10.0
20.0 30.0 50.070.0 100 150200
VCE. COLLECTOR - EMITTER VOLTAGE IVOLTS)

'"

There are two limitations on the power ha ndling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves Indicate Ie VeE limits of the
transistor that must be observed for rehable operation; Le.,
the tranSistor must not be subjected to greater dIssipation
than the curves indicate.
The data of Figure 4 is based on TJ(pk)~ 175°C; TC is vanable depending on condItions. Second breakdown pulse limits
are valId for duty cycles to'l 0% provldedTJ(pkJ ~ 175°C. TJ(pk)
maybe calculated from the data In Figure 3. At high case temperatures, thermal limitations will reduce the powerthatcan
be handled to values less than the limitations imposed by
second breakdown.

FIGURE 6 - MAXIMUM RBSOA. REVERSE BIAS
SAFE OPERATING AREA
30
L,'200'I'H '
IC/IBI ;. 50
TC' 25°C
VBEtoll) 0-5.0 V
RBE' 47 n
Duty Cvcle ' 10%

- - o
o

20

to.
I\\.
t\

REVERSE BIAS

\,\
:\.

f-MJll017.18=
MJll019.20
I- MJ11021. 22

For inductive loads, high voltage and high current must be

"

......
"- -...

sustained simultaneously during tum-off, in most eases, with
the base to emitter junction reverse biased. Under these con-

-

ditions the cotlector voltage must be held to a safe level at or
below a specific value of collector current. This can be accomplished by several means such as active clamping. RC snubbing, load line shaping, etc. The safe level for these devices is
specified as Reverse Bias Safe Operating Area and represents
the voltage-current conditions during reverse biased turn-off.
This rating is verified under clamped conditions so that the
device is never .ubjected to an avalanche mode. Figure 5 gives
RBSOA characteristics.

'==

60
100
140
180
220
VCE. COLLECTOR·EMITTER VOLT AGE IVOLTS)

260

1-640

r

I TJlpkl - TC" Plpkl ROJCIII

1000

MJ11017, MJ11019, MJ11021 PNP, MJ11018, MJ11020, MJ11022 NPN

III

FIGURE 6 - DC CURRENT GAIN

NPN

PNP
10.000

30,000

7000
5000
TJ

z 3000

~ 2000
~

~
u

1000
700

g

500

=>

.1

50 Vde

VCE
150°C

TJ - 25°C

~ 7000
~ 5000
z
~ 3000

.~

13
TJ

g

-55°C

200

./

V

TJ ~ 25';,S-

TJ

~

"

55°C

\

./

700
500

100

o2

50 Vde -

2000

.1 1000

300

II II
VCE

...........

TJ -150°C

10,000

..........-

V
-

I II

20,000

03

0 5 0 7 1.0
2.0 3 0
5 0 70
Ie, COLLECTOR CURRENT (AI

10

300
0.2

15 20

03

0.5 07 1 0
2.0 3.0
Ie. COLLECTOR CURRENT (AI

50

7 0 10

15 20

FIGURE 7 - COLLECTOR SATURATION REGION
PNP

40

'"~

35

~

30

~

25

2:.

~
~
~

1111
Ie ~ 10 A
Ie

20

~

15

~

10

~

50 A

\

"

05

o5 0 7 1 0

NPN

IVc ~ 15 A

TJ

~

25°C

\

.,

I

t:l
~ 3.5

~

3.0

~

2.5

t:l

-"

4.0
Ie
~

Ie

~
ai

2.0

'~"

1.5

~

1111
10 A

llC

~ 15 A

TJ ; 25

bc

1\

5.0 A

\

::::t
c

I'..

~ 1.0

> 0.5

2 0 3 0 5 0 7 0 10
20 30 50 70100
IS, SASE CURRENT (mAl

200300 500

0.5 0 7 1 0

2.0 3.0 5 0 7 010
20 30 50 70 100
IS, SASE CURRENT (mAl

200 300 500

FIGURE 8 - "ON" VOLTAGES
PNP

NPN

40

40

35

35
TJ

=25°C

TJ

30

en 2 5

5>

;;:; 2 0
«
'"
t:l
§; 1 5

25°C

~.
VSE(satl @ IC/IS ~ ~
VSE @ VCE

)

VSE(satl @ IC/IS = 1!-

50V

10
05
o1

~

3.0

III

.-i'"'"VCE(satl @ IC/IS

0 2 0 3 0 5 0 7 I 0 2 0 3 0 5 0 7 0 10
COLLECTOR CURRENT (AMPSI

~

20

10
100

--

0.5 roI

30 50 70

1-641

VSE @ VCE

T:::

~
j

~15 olv
..J...-t"'VCE(satl @ IC/IS

0 2 0 3 0.5 0.71 0 2.0 30 5.0 7 0 10
COLLECTOR CURRENT (AMPSI

~ 100
20

30 50

NPN

PNP

MJII028 MJII029
MJI1030 MJII031
MJII032 MJII033

®

MOTOROLA

50 AMPERE

COMPLEMENTARY SILICON
DARLINGTON
POWER TRANSISTOR

HIGH-CURRENT COMPLEMENTARY
SILICON TRANSISTORS
· .. for use as output devices in complementary general purpose
amplifier applications.
•

60-120 VOLTS
300 WATTS

High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)
•

Diode Protection to Rated IC

Monolithic Construction with Built-In Base-Emitter Shunt Resistor
• JU(.lction Temperature to +200oC

•

MAXIMUM RATINGS
MJll028 MJ11030 MJll032
Symbol MJ11029 MJ11031 MJll033

Rating
Collector-Emitter Voltage

Unit

VCEO

60

90

120

Vdc

Co!lector-Base Voltage

VCB

60

90

120

Vdc

Emitter-Base Voltage
Collector Current-Continuous

VEB

5

Vdc

IC
ICM

50
100

Adc

Peak

Base Current-Continuous

18

2

Adc

Total Power Dissipation @ T C - 2SoC
Derate above 2SoC @ T C "" 1DOoe
Operating and Storage Junction
Temperature Range

Po

300
1.71

Watts
W/oC

TJ. T stg

-55 to +200

°c

LIF~B

C

le

SEATING
PLANE

K

0

,

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Maximum Lead Temperature for
Soldering Purposes for ~ 10 seconds

TL

275

°c

ReJC

0.584

°c

Thermal Resistance Junction to Case

STYLE I:
PIN I. BASE
2. EMITrER
CASE. COLLECTOR

FIGURE 1 - DARLINGTON CIRCUIT SCHEMATIC

. Collector

Collector

PNP
MJll029

NPN

--,

.----+--,
Base

I

I

I
I
I
I
I
__ ...JI
Emitter

MILLIMETERS

--,

MJll028
MJll030
MJll032

r---~h

I

I
I
I
I
I

Base
I

I

I

I

I

I

'---------

__ ...JI

Emitter

INCHES

DIM MIN MAX
MAX
MIN
38.35 39.31 1.510 1.550
B 19.30 21.08 0.180 0.830
&.35 7.62 0.250 O.
C
1.45 1.80 0.D57 0.0&3
D
~135
3.43
E
211.90 30.40 1.177 I.
f
G 10.&7 11.18 D.420 ~44O
72 0.205 O.
5.
I
I
K' 11.18 12.19 0.440 ltol8ll
161
4.D9
151
0
3.
R
4.8 28.87 D.980 1.060

•

-

CASE 197-01
CTO-3 Except Pin Diameter)

'-642

MJ11028, MJ11030, MJ11032 NPNI MJ11029, MJ11031, MJ11033PNP

ELECTRICAL CHARACTERISTICS lTC

=

2S o C unless otherwise noted.)

Characteristic

Symbol

Min

Max

60

-

Unit

OFF CHARACTERISTICS

Collector·Emitter Breakdown Voltage (11
IIC = 100 mAde, IS = 01

Vde

SVCEO
MJll028 MJll029
MJll030 MJll031
MJll032 MJll033

COllector·Emitter Leakage Current
(VCE = 60 Vde, RSE = 1 k ohm 1
(VCE = 90 Vde, RSE = 1 k ohm)
(VCE = 120 Vde, RSE = 1 k ohm)
(VCE' 60 Vde, RSE = 1 k ohm, TC= 150°C)
(VCE • 90 Vde, RSE = 1 k ohm, TC = IS00CI
(VCE = 120Vde, RSE = 1 k ohm, TC=IS0 0 CI

90"
120

mAde

ICER
MJll028
MJll030
MJll032
MJll028
MJll030
MJll032

-

MJll029
MJll031
MJll033
MJll029
MJll031
MJll033

2
2
2
10
10
10

-

-

Emitter Cutoff Current

lEBO

-

(VSE = 5 Vde, IC = 01
Collector-Emitter Leakage Current
(VCE = 50 Vde, IS = 0)

ICED

5

mAde

-

2

mAde

1k
400

18 k

ON CHARACTERISTICS (1)
DC Current Gain
IIc = 25 Ade, VCE = 5 Vde)
IIC = 50 Ade, VCE = 5 Vde)

-

hFE

Collector-Emitter Saturation Voltage
IIC = 25 Adc, IS • 250 mAde)
IIC = 50 Ade, IS = 500 mAde)
Base-Emmer Saturation Voltage
IIc = 25 Ade, IS = 200 mAde)
IIc = 50 Ade, IS • 300 mAde)

Ii
,~

I

-

VCE(s.t)

-

I

Vde

I

Vde

I.

2.5
3.5

VSEls•• )

-

I

3.0
4.5

-

i

11) Pulse Test: Pulse Width.; 300 ps, Duty Cycle'; 2.0%.
FIGURE 2 - DC SAFE OPERATING AREA
100
50

There are two limitations on the power-handling ability
of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the
tr~iIOsistor that must be observed for reliable operation, i.e.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figure 2 is based on TJlpk) = lO0o C; TC is
variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second break·
down.

0:

"
~

", 20
I-

."-

10

-

Bondmg Wire Limited
- Thermally Limited @TC = 25 DC
- - - Second Breakdown Limited

G

'"co

~

co
~

MJll02S,29
MJll030, 31
'MJ11032: 33

0.5

~

0.2
0.1
0.2

0.5

10
20
50
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

100

200

FIGURE 3 - OC CURRENT GAIN

FIGURE 4 - "ON" VOL TAGE

100 k
I

50 k

VCE' 5 V
TJ 25°C

z 10 k
~ 10 k
Iz 5k

~

--

r-

2k

~

500

co

Ik

-

I

/'
VSElsati

~

==

T) 25JC
IC/IS'100
MJ1I029, MJ11031, MJ11033 PNP - MJ1102S, MJ11030, MJ11032 NPN

-

1-,

BOps

200

IPulsed)

100
1

-

........

".,

'-'

II "

MJ11029, MJ11031, MJ11033 PNP- MJll01B, MJll030, MJI1032 NPN

10
20
IC, COLLECTOR CURRENT lAMP)

50

- --

0:::2

,./

-- '"

,.....

"

..... /1

~

~

~

SO",
IPulsed)

VCElsati

100

1-643

'-t

10
20
IC, COLLECTOR CURRENT (AMP)

50

100

1112002

-

®

))P!-;igT1PI'!-;

MOTOROLA

Data Sheet

HORIZONTAL DEFLECTION TRANSISTOR

2.5 AMPERE
NPNSILICON
POWER TRANSISTOR

specifically designed for use in large screen color deflection
circuits.

1500 VOLTS
75 WATTS

•

Coliector·Emitter Voltage VCEX = 1500 Volts
Design..'s Data for
''Worst Case" Conditions

• Glassivated Base-Collector Junction
•

Forward Bias Safe Operating Area @ 50 /.IS = 15 A, 300 V

The Designers Data Sheet per·
mits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.

• Switching Times with Inductive Loads tf = 0.65 ps (Typ) @ IC = 2.0 A

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter·B ... Voltage

Symbol
VCEo(susl
VCEX
VEBO
IC

Collector Current - Continuous

Value

Unit

750
1500
5.0
2.5

Vdc
Vdc
Vdc
Adc

Base Current - Continuou$

IB

2.0

Adc

Emitter Current - Continuous

IE

4.5

Adc

Po

75
30
0.6
-65 to +150

Watts
Watts

250 C

Total Power Dissipation @ TC =
@TC=loooC
Darate above 250 C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering

TJ, Tstg

Q

wf'c
DC

NOTES
, DIMENSIONS Q AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM

W

3 POSITIONAL TOLERANCE FOR
MOUNTING HOLE 0.

Svmbol

Max

Unit

R9JC
TL

1.67
275

°CIW
DC

I + I 1.'3IO.005IG1 I T IvGlI
FOR LEADS.

It 1'·13loo05IG1T I vGlI UGII
4 DIMENSIONS ANO TOLERANCES PER
ANSIY14.5,1913.

Purposes: ,1/8" from Case for 5 Seconds
STYLE 1

2
CASE

1-644

BASE
EMITTER
COLLECTOR

MJ12002

ELECTRICAL CHARACTERISTICS ITc = 250 C unless otherwise noted)

I

Charactoristic
OFF CHARACTERISTICS 11)

Symbol

I

Min

TVp

Max

Unit

VCEOIsus)

750

-

-

Vde

IIc = 50 mAde, IB = 0)
Collector Cutoff Current
IVCE = 1500 Vde, VBE = 0)

ICES

-

-

1.0

mAde

Emitter Cutoff Current

lEBO

-

-

0.1

mAde

Collector-Emitter Saturation Voltage
IIC = 2.0 Ade,'lB = 1.8 Ade)

VCElsatl

-

5.0

Vde

Base-Emitter Saturation Voltage
IIc = 2.0 Ado, IB = I.B Ade)

VBElsatl

-

-

1.5

Vde

Collector-Emitter Sustaining Voltage

IVBE = 5.0 Vde, IC = 0)
ON CHARACTERISTICS 11)

Second Breakdown Collector Current with

-

See Figure 14

IS/B

Base--Forward Biased
DYNAMIC CHARACTERISTICS
Output Capacitance

IVca = 10 Vde, IE = 0, f = 0.1 MHz)
Current Gain - Bandwidth Product 11)
IIC = 0.1 Ade, VCE = 5.0 Vde, ftest = 1.0 MHz)
SWITCHING CHARACTERISTICS
Fall Time
IIC = 2.0 Ade, IBI = 1.0 Ade,
LB = 12 I'H, See Figure 1)

Cob

-

50

-

pF

t-r

-

4.0

-

MHz

11) Pulse Test: Pulse Width .. 300 I'S, Duty Cycle = 2%.
FIGURE 1 - TEST CIRCUIT
+80 V

Common
2500
5.0W

5.0 k Coarse
5WIBAdj.

0.11100 V

Capacitor values In JLF

reslston .re

200
5.0W

~

watt

47

I

I

2.2 k

IL

c

I

I

MR918
(1500 V

Solactedl
10lt60 V
Width
Adj

+

-=
1.8 k

=-

IC
0.75 A
1.5
2.0

DRIVER TRANSFORMER ITI)
Motorola pan number 25D68782A-05-1/4" 'aminate "e" iron
core. Primary Inductance- 39 mHo Secondary Inductance- 22 mHo
Leakage Inductance with primary shorted - 2.0 jJH, PrImary 260
turns #28 AWG enamel wire, Secondary 17 turns, #22 AWG
enamel wire.

1-645

L

4.25mH
2.18mH
1.6mH

C
.0031'F
.0001'F
.00BI'F

10
5.0W

Common

+125 V

ID

MJ12002

BASE DRIVE: The Key to Performance

III

ay now, the concept of controlling the shape of the
turn-off base current is widely accepted and applied in
horizontal deflection design_ The problem stems from the
fact that good saturation of the output device, prior to
turn-off, must be assured_ This is accomplished by providing more than enough Ia 1 to satisfy the lowest gain
output device hFE at the end of scan ICM- Worst case
component variations and maximum high voltage loading
must also, be taken into account.
If the base of the output transistor is driven by a very
low impedance source, the turn-off base current will reverse very quickly as shown in Figure '2. This results in
rapid, but only partial, collector turn-off, because excess
carriers become trapped in the high resistivity collector
and the transistor is still conductive. This is a high dissipation mode, sincethe collector voltage is rising very rapidly.
The problem is overcome by adding inductance to the
base circ",it to slow the base current reversal as shown in
Figure'3,thus allowing excess carrier recombination in the
collector to ,occur while the base current is still flowing.
Choosing the right La is usually done empirically, since
the equivalent circuit is complex, and since there are
several important variables (lCM, lal, and hFE at ICM).
One method is to plot fall time as a function of LS, at the
desired conditions, for several devices within the h F E
specification. A more informative method is to plot power
dissipation versus Ia 1 for a range of values of LS as shown

in Figures 4 and 5. This shows the parameter that really
matters, dissipation, whether causal by switching or by
saturation. The negative slope of these curves at the left
(low IS1) is caused by saturation losses_ The positive
slope portion at higher lal, and low values of La is due to
switching losses as described above. Note that for very low
LS a very narrow optimum is obtained. This occurs when
ISl hFE = ICM, and therefore would be acceptable only
for the "typical" device with constant ICM. As La is increased, the curves become broader and_flatter above the
lal hFE = ICM point as the turn-off "tails" are brought
under control. Eventually, if La is raised too far, the
dissipation all across the curve will rise, due to poor
initiation of switching rather than tailing. Plotting this
type of curve family for devices of different hFE, essentially moves the curves to the left or right according to the
relation lal hFE = constant. It thlln becomes obvious
that, for a specified ICM, an LS can be chosen which will
give low dissipatipn over a range of hFE and/or lSI. The
only remaining decision is to pick lSI high enough to
accommodate the lowest hFE part specified. Figure 8
gives values recommended for LS and Ia 1 for this device
over a wide rang~ of ICM. These values were chosen from
a large number of curves like Figure 4 and Figure 5.
Neither La nor ISl are absolutely critical, as can be seen
from the examples shown, and values of Figure 8 are provided for guidance only.

TEST CIRCUIT WAVEFORMS
FIGURE 2

FIGURE 3

Ie

Ie
(time)

(tIme)

TEST CIRCUIT OPTIMIZATION
The test circuit mav be used to evaluate device. in the conventional mann,r, I.e., to measure fall time, storage tima, and
saturation voltage. However, this circuit was designed to evaluate
devices bv a limpls criterion, power supplv input. Excessive
power lnpu~ can be caused bV 8 variety of problems, but it Is the
dissipation In the transistor that is of fundamental Importance.

Once the required transistor operating current Is determined,
fixed circuit values may be selected from the table. Factory testIng Is performed by reading the current meter only I since the
Input power Is proportional to current. No adjustment of the
test apparatus is required.

1-646

MJ12002

FIGURE 4 - OPTIMIZING DRIVE

@

FIGURE 5 - OPTIMIZING DRIVE

IC ':' 0.75 A
5.5

4.0

~ 3.5

i

\.

'"w

~ 3.0

-

~~

I-

~

~

~

~ 2.5

2.0

o

0.1

La.H

4/
~

-------

iD"'

0.2

0.3

\

N

"'"

0

3.5
0.2

0.4

~

a.o

~

'"
~

"'-"'

'\..
7.0

~
~

"

~ 6.0

0.4

0.6

1

2.0

..........

~

t'-...

ICM' 1.75 A. la' 0.85 A. La' 13 pH

.........

. . . r-- --- -- -

.........

'-.....

1.5

La.H

./'"
~

20

:-.......

./"""

/
. /V

rZ4

0.6

-r--.. . .

,.

0.8

-

0.5

1.0

1.2

-

If

f.---

_t-"

~

9.0

~

--

~

>=

o

20

40

.-

...............
1.0

~
0.5

...----

V
/"

./

sj

,

/

V

1.5

120

.

~

6.0
160

140

K

2.0

10
IS

1.5

/'"

./

/

1'--.,1

2.5

a.o ~

I----

V

V

~

4.0

1.0

1.5

2.0

ICM. COLLECTOR CURRENT (AMP)

1-647

~

~

If

o
0.5

>=

6.D~

-

ICM. COLLECTOR CURRENT lAMP)

w
:E

...........

/

o
1.0

100

~
1.0

2.0

1

.........

u
w

80

~

FIGURE 9 - SWITCHING BEHAVIOR .ersus ICM

....... ~

I-

60

8.0 ~

TC. CASE TEMPERATURE 1°C)

2

5

0.5

....
-

0: 1.5

o

1.0

0.8

t-....

FIGURE 8 - OPTIMUM DRIVE CONDITIONS

;

../'

FIGURE 7 - SWITCHING BEHAVIOR versus
TEMPERATURE

=2.0 A

IBI. BASE CURRENT lAMP)

~
=>

./

><'"

o

5.0
0.4

2.0

.........

'-.....

,/

lal. aASE CURRENT (AMP)

FIGURE 6 - OPTIMIZING DRIVE @ IC

.........

/

............... r-.,

2

4

lal. BASE CURRENT lAMP)

9.0

IC = 1.5 A

LB.H

V

/

\
i\\ \
\\ "\ "- ~

@

2.0
2.5

~

MJ12002

FIGURE 10 - THERMAL RESPONSE
7~D 9.5
5

~
r--

0:2
~

0.1

~

I !==O.os

-

~

PmJl

tt-J

7::::0.02

....Ie

1I1

DUTY CYCLE. 0 = IIh2

0.02 I-- .SINGLE.PULSE
0.0 I
0.01

IIIII

I II I

0.02

om

0J15

0.1

0.2

u.s

D.l

2.0

III

3.0

10

5.0

II

I

3D

50

20

IIsJC(t) = .(t) RUC
IIsJC=1.&70CfWMu
oCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AI II
TJ(pkl- TC'PlpkIIlsJC(t)
100

2DO 3DO

500

IDOD

I. TIMElmsl

FIGURE 11 - COLLECTOR SATURATION REGION
-

5.0

o

4.5

~
~
w

'"~
o

;:;

~
~

~

\ IC·0.75
2.5

2.0

_

1.5
1.0

8
w

O.S

~

1\

\

1\

311

.

TJ = 25°C

411 1\
3.5

FIGURE 12 - DC CURRENT GAIN
3D

\ 1.5A

_\

\

,

~

\
\
'\

\

....... 1---.

0.1

0.2

'-'

I-

0.3
0.4 0.5
lB. BASE CURRENT lAMp)

;::::.,

7.0

"'

5.0

"-

~

\

~

o

.......

10

'-'
0

I\.

r-

I- f--.25oC

:<

'"....
~
'"'"
::>

\2.0A

VC~=5~V

T;'~C

20

~

3.0

.. "-

~

2.0
1.5

0.6 0.7 D.8 0.9111

~.OS

0.03

0.1
0.2
0.5
IC. COLLECTOR CURRENT lAMP)

1.Q

2.0

3.0

FIGURE 14·MAXIMUM FORWARO BIAS
SAFE OPERATING AREA

FIGURE 13 - "ON" VOLTAGES

2.0

so ..

10
I.8

~

0

~

1.oms
1.2

w

'"
~0

>
>'

VBElsatlOlc/IB = 2.0

0. 8

100°C

0.4

VCElsat)@ Iclla- 2.0

o
0.25

-

25°C

0.3

0.4

-------

0.5
0.7
1.0
IC. COLLECTOR CURRENT lAMP)

.L
~

de

I-lH-

SINGLE
--"'0 PULSE

7

100°C

/

/

~

. /~

0.01

BONDING WIRELIMIT
THERMAL LIMIT ISINGLE PULSEI
SECOND BREAKDOWN LIMIT

O.OOS

25°C

0.002
2.0

2.5

B.O 10

20

3D

SO

100

200

300

SOD

BOD

VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI

NOTE:
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating
area curves indicate Ie - VeE limits afthe transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The 50 /JS sa curve is beyond the thermal limits of this part. However, the parts will survive a transient that remains within these sa limits

without failing.

1-648

MJ12003

®

MOTOROLA

4 AMPERE

HORIZONTAL DEFLECTION TRANSISTOR
NPN SILICON
POWER TRANSISTOR

... specifically designed for use in CRT deflection circuits.
•

Collector· Emitter Voltage - VCEX = 1500 Volts

•

Glassivated Base·Coliector Junction

50 liS

•

Forward BiasSafe Operating Area

•

Switching Times with Inductive Loads tf = 0.5 liS (Typl @ IC = 3.0 A

@

=

·1SOOVOLTS
100 WATTS

20 A, 300 V

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO(sus)

750

Vdc

Collector-Emitter Voltage

VCEX

1500

Vdc

Emitter-Base Voltage

VESO

5.0

Vdc
Adc

Rating

Collector-Current - Continuous

Ie

4.0

Base Current - Continuous

IS

3.0

Adc

Emitter Current - Continuous

IE

7.0

Adc

Total Power DISSipation @TC = 2SoC
Te = 1000 e

PD

100
40
0.8

Watts
Watts

TJ, T stg

-65 to + 150

°e

Derate above 25°C
Operating and Storage Junction Temperature Range

L~rEB

w/oe

1;

Characteristic

Thermal Resistance, Junction to Case
Ma)(!mum Lead Temperature for Soldering Purposes

Symbol

Max

Unit

ROJC

1 25

°C/W

TL

275

°c

-+

o

..

THERMAL CHARACTERISTICS

C

K

j

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE-COLLECTOR

1/8" from Case for 5 Seconds

NOTES

FIGURE 1 - TEST CIRCUIT
Com
2kJ!5W
820

100 V

5W

15,750 Hz

1. DIMENSIONS Q AND V ARE DATUMS
2.
IS SEATiNG PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR

m

FIGURE 1 - SWITCHING TIMES TEST CIRCUIT

MOUNTING HOLE Q:

I .11.131O.00£Ie I r i v e I
FOR LEADS:

I .It.131D.DOSle r I ve I ael

.-_+..::F!.:jl'*l AdJ

4. DIMENSIONS AND TOLERANCES PER
ANSI Y14.5, 1973.
MAS'8
(Sllec:ttld
1500\11
10"F
1fiO V

PuIMWldthAdj

1ft Du'lYC.,cli
'00

'W
DRIVER TRANSFORMER (Ttl

Com H2S V

=-""N"'CH"'E:;;S--'
MIN MAX
1.S50
0.830
0.250 0.3DO
0.038 0.043
0.055 0.070
1187 sse
0.430BSC
0.215 sse
D,BB5 sse

0.440
0.150

Motorola ~rt numlar :atlD&8782A-oS·1/4" Ilmlnlttl "e" iron c:orl.
Prlmlry Induc:tlnn - 39 mH, SlICondlry inductancl - 0.22 mH,
LIlli: .... IndUc:tlnctI with primarv 8horted - 2.0 "H. "Imlry 280
turM, _28 AWG IIIlmll wirl, 8acondar.,. 17 turM, #22 AWO

CASE l'D~

1-649

0.480
0.165
10S0
0.210
0.165

MJ12003

II]

I

ELECTRICAL CHARACTERISTICS ITc = 25°C unle.. otherwise noted I

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEOlsusl

750

-

-

Vdc

ICES

-

-

1.0

mAde

1.0

mAde

5.0

Vde

1.5

Vdc

OFF CHARACTERISTICS 111
Collector-Emitter Sustaining Voltage
IIC = 50 mAde. IS = 01
Collector Cutoff Current
IVCE = 1500 Vde. VSE

= 0)

Emitter Cutoff Current
IVSE = 5.0 Vde. IC = 01

IESO

ON CHARACTERISTICS III

Collector-Emitter Saturation Voltage
IIC

= 3.0

Adc. IS

Base-Emitter Saturation Voltage

-

-

VCEls,d

= 1.2 Adcl

VBEls't)

IIC = 3.0 Adc, IB = 1.2 Ade)
Second Breakdown Collector Current with Base Forward Biased

-

See Figure 5

ISlb

OYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product
IIC

= 0.1

Ade, VCE

= 5.0

Vde, f te51

Output Capacitance
IVCS

= 10 Vde. IE = 0, f = 0.1

fT

-

4

-

MHz

Cob

-

90

-

pF

= 1.0 MHz)

MHz)

SWITCHING CHARACTERISTICS
Fall Time
IIC = 3.0 Adc, IB1

= 1.2

Adc, LS

= 8.0 !,H, See

Figure 1)

(1) Pulse Test: Pulse Width.;; 300 !,S, Duty Cvele = 2%.

FIGURE 3 - COLLECTOR SATURATION REGION

FIGURE 2 - OC CURRENT GAIN
20

~).lt~O'C

15

12l.lel

10

2.8

~

VeE" 5V

r- r--.

o

~

2.2

'"~

1.8 r-

o

~

1.4

1.0

\

~ 0.8

\

3. 0
2. 0
0.05

!

§_ 0.'

"-

S
0.1

0.2

0.3

0.5

2.0

1.0

50

~ 0.1
>
0.0' 0.06

0.,

Ie. COLLECTOR CURRENT (AMP)

1.0

~

0.6

g
>-

0.04 0.116

,.

T=2~ ,-

V

0.2

0.4

~

E

==

01

1.0

Ie. COLLECTOR CURRENT (AMP)

2.0

0.0 1
10

4.0

~

Smgle
Pulse

Te:: 25°C

----§---

de

Bonding Wire Limit
Thermal limit (Smgle Pulse)

SacondBreakdown limit

""";:I,e
0.6

1.0ms

10

c

r

1.0ms

...

~
~

:>
~

~oo'e

0.1

"

/"

VeE ..,) • 'ella • 2.0

4.0

50~s

10

>z

-;r.;~ r-

VBE(sat)@IC/IB..:!'O

0.4

0.2

2.0

0:

1.2

O.a

0.2 0.3
0.5
1.0
IC. COLLECTOR CURRENT lAMP)

100

1.4

~

-'-

"-

FIGURE 5 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FIGURE 4 - "ON" VOLTAGES

~

2 A 2.5 A 3A

\
\
\

~

""~

5.0

·1.5A

IC=0.75A

>

2.0

5.0

10

20

50

100

~200

500 11)00

"CE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

NOTE.
There are two limitations on the power handling ability of a transistor: average junction tamperature and second breakdown. Safe operating Ifea curvlS indicate Ie - VCE hmits of the transistor
th,.t must be observed for reliable operation; i.e., the tranSIStor must not be subjected togtesler
diSSipation than the curves mdicate.
The 50 lIS and 1 ms curves are beyond the thermal hmits of thiS part. However, the parts will
SUrvive a transient that remllnS Within these SB limits Without fall mg.

1-650

®

MJ12004
MJH12004
MOTOROLA

Designers Data Sheet
5.0AMPERE

HORIZONTAL DEFLECTION TRANSISTOR

NPN SILICON
POWER TRANSISTORS

· .. specifically designed for use in large screen color deflection

1500 VOLTS
100 WATTS

circuits.

• Collector· Emitter Voltage - V CEX = 1500 Vdc

MJ12004

• Glassivated Base·Coliector Junction
• Safe Operati ng Area

@

50 iJ.S = 20 A, 400 V

• Switching Times with Inductive Loads tf = 0.4 iJ.S (Typi @ IC = 4.5 A
PIN 1

BASE
2 EM1TTER
CASE COLLECTOR

NOTE~

MAXIMUM RATINGS
Rating

Symbol

MJ12004
MJH12004

Unit

Collector-Emitter Voltage

VCEO(sus)

750

Vdc

Collector-Emitter Voltage

VCEX

1500

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current - Continuous

IC

5.0

Adc

Base Current - Continuous

IB

4.0

Adc

Emitter Current - Continuous

IE

9.0

Adc

Po

100

Watts

Operating and Storage Junction
Temperature Range

B

C

o
E
F
G
tt

J
K
0:
R

U

Total Power Dissipation @Te=2SoC
@TC= 1000C
Derate above 2SoC

1 DIMENSIONS Q AND v ARE DATUMS
2 OJ ISSEATtNG PLANE AND DATUM
J POSITIONAL TOLERANCE FOR
MOUNTING HOLE 11

MILLIMETERS
DIM MIN
MAX
A
3937

V

[_III3I000"e Illvel
FOR LEADS
[_III3I000"e , I vel ael

211)8

Ii 35
1)91

162
109

140
18
301fiBSC
1092BSC
546BSC
168SBSC
1118 1219
J81
419
2667
483
533
381
419

~

DIMENSIONS AND TOLERANCES PER
ANSIY145,1913

CASE 1-05
TO-204AA
(Formerly TO·3)
MJH12004

40
O.B

wf'>c

TJ, T stg

-65 to +150

°c

Symbol

Max

Unit

ReJC

1.25

°C/W

TL

275

°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering

K

1

Purposes: 1/8" from Case for 5 Seconds

. ... .,.

a,. ,.

MILLIMETERS

••

Designer's Data for "Worst Case" Conditions

C
0
E

The Designer's Data Sheet permits the design of most circuits entirely from the
Information presented. Limit data - representing devICe characteristics boundaries - are
given to facihtate "worst case" design.

1-651

2032
1549
.19
102

135

fi- rillJ

241
038

t+ r*r~

·•

1588
1219

40'

2108
1590

'08
10'
10'
572
320
064

~~9

1651
1210

422

INCHES
M.X
0830
0610 0626
0165 0100
0040
,053 0065
0205 0125
0095
0015 0025
0500 0610
0625 0650
0480 05110
0159 0166

,

1 BASE

2 COLLECTOR
3 EMITTER
4 COLLECTOR

08110

"65

om

CASE 340·01
TO-218AC

MJ12004.MJH12004

ELECTRICAL CHARACTERISTICS ITC' 25 0 unle.. otherwise noted.}

I

Symbol

Min

Typ

Max

Unit

VCEOlsus}

750

-

-

Vde

ICES

-

-

1.0

mAde

IESO

-

-

1.0

mAde

-

-

5.0
5.0

-

-

1.5
1.5

Characteristic

OFF CHARACTERISTICS Il}

Coliector·Emitter Sustaining Voltage
IIC = 50 mAde, IS • 0)
Collector Cutoff CUrrent

IVCE = 1500 Vde, VSE • 0)
Emitter Cutoff Current

IVSE

=5.0 Vde, IC = 0)

ON CHARACTERISTICS 11)
Coliector·Emitter Saturation Voltage
IIC = 4.5 Ade, IS = 1.8 Ade)
IIC = 3.5 Ade, IS = 1.6 Ade)

VCElsatl

Base Emitter Saturation Voltage

VSE(satl

(lC = 4.5 Ade, IS = 1.8 Ade)
(lC' 3.5 Ade,ls' 1.5 Ade)

Vde

Vde

-

Second Breakdown Collector Current with Base
Forward Biased

See Figure 14

ISlb

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

IT

-

4

-

MHz

Cob

-

125

-

pF

(lC' 0.1 Ade, VCE = 5.0 Vde, I t85 t • 1 MHz)

Output Gapacitance
IVCS = 10 Vde, IE = 0, 1= 0.1 MHz)
SWITCHING CHARACTERISTICS
Fall Time
(lC = 4.5 Adc, lSI' 1.8 Ade,
Ls = B.O jlH, See Figure 1)
11) Pulse Test: Pulse Width .. 300 jlS, Duty Cycle

=2%.

+60V

Com

FIGURE 1 - SWITCHING TIMES TEST CIRCUIT

2 k/5 W

100/5W

820
5W
15.750 Hz
. -_ _--+_F"rc=.;eq Ad;

100

Ie

L

MR918

•10 J.lF
25V

(Selected
+

3
5W

Pulse Width Adj

C

1600 VI
10jlF
150 V

10" Duty Cvcle
10n
6W

Com +125 V

-=

L

e

A

mH

jlF

3.5

0.87

0.013

4.6

0.67

0.017

Ie

DRIVER TRANSFORMER ITl)
Motorola part number 25068782A-QS·1/4" laminate "e" Iron cor•.
Primary Inductance ~ 39 mHo Secondary Inductance - 0.22 mHo
Leakage Inductance with primary shorted - 2.0 jlH. Primary 260
turns. #28 AWG enaMel wire. Secondary 17 turns, #22 AWG
enamel wire.

1-652

MJ12004,MJH12004

II.

BASE DRIVE: The Key to Performance
By now. the concept of controlling the shape of the
turn·off base current is widely accepted and applied in
horizontal deflection design. The problem stems from
the fact that good saturation of the output device. prior
to turn·off. must be assured. This is accomplished by
providing more than enough IBl to satisfy the lowest gain
output device hFE at the end of scan ICM' Worst·case
component variations and maximum high voltage loading
must also be taken into account.
If the base of the output transistor is driven by a very
low impedance source. the turn·off base current will re·
verse very quickly as shown in Figure 2. This results in
rapid. but only partial. collector turn·off. because excess
carriers become trapped in the high resistivity collector
and the transistor is still conductive. This is a high dissipa'
tion mode. since the collector voltage is rising very rapidly.
The problem is overcome by adding inductance to the
base circuit to slow the base current reversal as shown in
Figure 3. thus allowing excess carrier recombination in the
collector to occur while the base current is still flowing.
Choosing the right LB is usually done empirically. since
the equivalent circuit is complex. and since there are
several important variables 0CM. IB1. and hFE at ICM)'
One method is to plot fall time as a function of LB. at the
desired conditions. for several devices within the hFE
specification. A more informative method is to plot power
dissipation versus IBl for a range of values of LB as shown

in Figures 4 and 5. This shows the parameter that really
matters. dissipation. whether caused by switching or by
saturation. The negative slope of these curves at the left
(low IB 1) is caused by saturation losses. The positive slope
portion at higher IB1 • and low values of LB is due to
switching losses as described above. Note that for very low
LB a very narrow optimum is obtained. This occurs when
IBl hFE ~ ICM. and therefore would be acceptable only
for the "typical" device with cOnstant ICM' A. LB is increased. the curves become broader and flatter above the
IBl hFE = ICM point as the turn·off "tails" are brought
under control. Eventually. if LB is raised too far. the
dissipation all across the curve will rise, due to poor
initiation of switching rather than tailing. Plotting this
type of curve family for devices of different hFE' essentially moves the curves to the left or right according to the
relation IBl hFE = constant. It then becomes obvious
that. for a specified ICM. an LB can be chosen which will
give low dissipation over a range of hFE and/or IB1' The
only remaining decision is to pick IBl high enough to
accommodate the lowest hFE part specified. Figure 8
gives values recommended for LB and IBl for this device
over a wide range of ICM' These values were chosen from
a large number of curves like Figure 4 and Figure 5.
Neither LB nor IBl ~re absolutely critical, as can t:>e seen
from the examples shown, and values of Figure 8 are
provided for guidance only.

TEST CIRCUIT WAVEFORMS
FIGURE 2

FIGURE 3

(time)

(time)

TEST CIRCUIT OPTIMIZATION
Once the required transistor operating current I, determined.
fixed circuit values maV be selected from the table. Factory test·
jng Is performed by reading the current meter only. since the
input power is proportlona, to current. No adiustment of the
test apparatus Is required.

The test circuit may be used to evaluate devices in the conventional manner, i.e., to measure fall time, storage time, and

saturation voltage. However. this circuit was designed to evaluate
davlces by • simple criterion, power supply input. Excessive
power input can ba caused by 8 variety of problems, but It Is the
diSSipation In the transistor that is of fundamental Importance.

1-653

MJ12004,MJH12004

FIGURE 4 - OPTIMIZING DRIVE@ 3.5 A

FIGURE 5 - OPTIMIZING DRIVE @4.5 A

13

6

.\

\\
l\\\
1\\\ $...

I

16

\'\' ~" ~

o

/

4

\~

I~ \.

3

~ roo

12

0.5

1.5

o

0.5

1. 5

1

...

~

::

o.5

./

./

/'

,.;:
w

V

-

'f

--

j
~

1

80

40

80

100

120

/'

f-

/

roo
o
o

140150

20

40

20

L

1

--<~

"-....

1

5

. . . r---....
...............

.,-

~Oolt'N...(·.

.~ Is

,

.......

D
4.5

--

r-....

1

I

l

3.5

6
140150

1

NOMINAL

4'Oolt,4'...L""--

3

120

2

.........

f-- -;
.La

100

80

I-

FIGURE 9 - SWITCHING BEHAVIOR va,suIICM

FIGURE 8:- OPTIMUM DRIVE CONDITIONS

~

60

--

1

TC. CASE TEMPERATURE (DC)

2

t'-.. .'

1

~

TC. CASE TEMPERATURE (DC)

5

/"

/

./

0.5

8

20

'Y

1.5

1

'7

o
o

/""

/

.. /

l!

....

FIGURE 7 - SWITCHING BEHAVIOR v...US
TEMPERATURE
ICM = 4.5 A.IB ~ 1.75 A. LB ~ 81lH

/'"

.lI

1.5
lSI. BASE CURRENT (AMP)

2

1

_""'5':

L

4

FIGURE 6 - SWITCHING BEHAVIOR v... us
TEMPERATURE
ICM· 3.5·A.IB ·'.5 A. LB ~ 141lH

.......

--

12

\ ",--,
~

2 -

/'

LBOH

\::j...j

la 1. aASE CURRENT (AMP)

...

-

;-...

I'-..

4

9

-

/

LaoH

5

,\
\\

............
NOMINAL

If

5

o

o

3

5

3.6

4.5
IC. COLLECTOR CURRENT lAMP)

IC • COLLECTOR CURRENT (AMP)

1-654

5

2

MJ12004,MJH12004

TYPICAL ELECTRICAL CHARACTERISTICS

SAFE OPERATING AREA INFORMATION
FIGURE 11 - MAXIMUM RATED FORWARD
BIAS SAFE OPERATING AREA

FIGURE 10 - DC CURRENT GAIN
10

I~

I-

I

'2

<

'"

50 ~s Sing'l, Pulse

VCE' 5 V

TJ·1DOoC
10

..........

250C

10

1.0 ms=

IZ

~

7

I'

13

'\

"
c

I'\.

~
3
10
005007 01

1.0

,

de
TC = 25°C

f--

0.1

~

_

Bonding Wile limit

~ =-~::~:'i::~down limit

01 03
05 0.7 I
IC. COLLECTOR CURRENT lAMP)

10

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 12 - COLLECTOR SATURATION REGION

~
c
~
w

I.B
1.4

NOTE:
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor must be observed for reliable
operation;' i.e .. the transistor must not be subjected to
greater dissipation than the curves indicate.
The 50 I's S8 curve is beyond the thermal limits of this
part. However, the parts will survive a transient that
remains within these S8 limits without failing.

to

:;
"

\

0

>

'"w

lI-

~

'"0

~
8

1.6 f- -\:IC: 1 A -

-

~3A

\

1-\3.5A\4A

4.5 A

1.2

O.B
0.4

~

1\
\

\

,

\.

'\

......

.......

>

0.3

0.5

0.7
I
IB' BASE tURRENT lAMP)

FIGURE 13- "ON" VOLTAGES
1.4

1.2

~

TJ~150~ :,......-:~

1

o

~

w

'"
g~

0.8

VSEI",)@ Ic/IS: 1

:f-"

0.6

---

>VfEI"t)@ICIlS =

"iTi

-I

t

0.1

-

~

15 0C

I

0
0.05

I

lOOOf7$

0.4

o. 2

"'1oooc

0.5 0.7
0.1 0.3
IC, COLLECTOR CURRENT lAMP)

'·655

r--

lK

MJ12004,MJH12004

III]

THERMAL RESPONSE

FIGURE 14 - MJ12004
1.0
0.7
0.5

0-50%

~iS

0.3

~~

20~

0.2

~~

0.1

"'~

i!=1
.....

i~

~~
~;

R8JCIII - rill R8JC
R8JC = 1.25 °CIW Max

.....

10%

0.03
0.02

ptnn
DulV Cvcle. 0 = '1/'2

SinglePulse= ~

5%

0.07
0.05

TJlpkl - TC = Plpkl R8JCIII
Plpkl

:

1'~2-J

f..-'"

I

111111

0.01
0.01

o Curves Apply tor Power Pulse Tram Shown
Read Time @tl

0.02

0.05

0.1

0.2

0.5

1.0

2.0

10

50

I
50

20

100

200

2K

IK

500

I. TIMElmsl

FIGURE 15 - MJH12004
1.0

....
;i

"'-

O.s -

-

WCI
:l:W

~I

-

.... w

-

!~ o. I
~~
§~O.OS

... ::1

:g~'" 0.02

-

.....
...-::::; IiIII

O.~

.... N

~~ 0.2

D' 0.5

--0.1

0.02

~\ngl. ~UI'~

II
0.05

0.1

III
0.2

:::::
:::::

0.5

1.0

2.0

5.0
t. TIME 1...1

1-656

10

I I
20

o Curves Apply for Power
Pulse Tram Shown
Read TIme @tt

TJ(pkl - TC
Plpkl

=Plpkl R8JCIII

,-

11~2-J

0.01

0.0 I

-

'1/'2

pr

0.02

" .,

R8JCIII rill R8JC
R8JC =I 25 °C/W Max

-Inn
DulV Cvcle. 0

I- ~ :;::1="

-li.OS

;;:;;;;; !!::

l1li"

f::
rrrrt=::
1=
rr-

II II
100

200

500

1000

2000

MJ12005

®

MOTOROLA

8 AMPERE

NPN SILICON
POWER TRANSISTOR

HORIZONTAL DEFLECTION TRANSISTOR
· .. specifically deSigned for use in deflection circuits.

1500 VOLTS
100 WATTS

•

VCEX=15DDV

•

GlasSivated Base·Collector Junction

•

Safe Operating Area @ 50 f.1s

= 20

A, 400 V

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Em Itter-Base Voltage

Unit

Symbol

Value

VCEX

1500

Vdc

VE8

5.0

Vdc

Collector Current - Continuous

IC

8.0

Adc

Base Current - Continuous

IS

4.0

Adc

Emitter Current - Continuous

IE

12

Adc

Total Power OlSSlpatlon @ T C - 2SoC

PD

100
0.8

Watts

TJ, T stg

-65 to + 150

°c

Svmbol

Max

Unit

ReJC

1.25

°C/W

TL

275

uc

Derate above 25°C
Operating and Storage Junction

W/oC

Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MaXimum Lead Temperature for
Soldering Purposes 1/8" from

u

Case for 5 Seconds

NOTES
1. OIMENSIONS Q AND V ARE OATUMS.
1.
IS SEATING PLANE AND OATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q

OJ

FIGURE 1 - MAXIMUM FORWARO BIAS SAFE OPERATING AREA

I *1.13(O.005Ie IT Ive I

50

FOR LEADS:

50,us

~ 10

1*1 ,.13(O.005IeT I vel Qel

SINGLE PULSE

"5

4. DIMENSIONS ANO TOLERANCES PER
ANSI Y14.5, 1973.

1 ms

~
~

10

OJ

u

~

....u"

STYlE 1
PiN I 8ASE

de

w

~

2 EMITIER
CASE COLLECTOR

01

8
~

f= -

BONDING WIRE LIMIT
-THERMALLY LIMITE 0 @TC"25 0 C
SECONO BREAKOOWN L1MIT

r:::
001 "='
0.005
10

DIM
A
B
C
D
E
F
G
H

J
K

20

30

40 50

100

500

1000

VCE, COLLECTOR EMITTER VOLTAGE IVOLTSI

n
R
U
V

MILLIMETERS
MIN
MAX
39.37
21.08
6.35
7.62
0.97
1.09
1.40
1.78
30.15 BSC
10.92 BSC
5.46 BSC
16.89 BSC
11.18 12.19
4.19
3.81
26.67
4.83
5.33
3.Bl
4.19

-

CASE 1·05

1-657

INCHES
MIN
MAX
1.550
- 0.830
0.25U 0.300
0.038 0.043
0.055 0.070
1.187 BSC
0.430 BSC
0.215 BSC
0.665 BSC
0.440 0.480
0.150 0.165
1.050
0.190 0.110
0.150 0.165

-

MJ.12005

ELECTRICAL CHARACTERISTICS (TC = 25°C unless oth.,w;se not.d)
Symbol

Min

Typ

Max

Unit

VCEOsus)

750

-

-

Vde

Collector Cutoff Current

'CES

-

-

0.25

mAde

(VCE = 1500 Vde, VBE = 0)
Em Itter Cutoff Current
(VBE = 5.0 Vde, IC = 0)

'EBO

-

-

0.1

mAde

Collector-Emitter Saturation Voltage

VCE(s.t)

-

-

5.0

Vdc

(lC = 5.0 Ade, 'B = 1.0 Ade)
Base Emitter Saturation Voltage
(lC = 5.0 Ade, 'B = 1.0 Ade)
Second Breakdown Collector Current with Base Forward Biased

VBE(s.t)

-

-

1.5

Vde

'Slb

-

-

Characteristic

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(VC = 50 mAde, 'B = 0)

ON CHARACTERISTICS (1)

See Figure 1

SWITCHING CHARACTERISTICS
Fall Time

(lc = 5.0 Ade, 'B 1 = 1.0 Ade, LB = 8.0 j.lH 1
(1) Pulse Test: Pulse Width" 300 ps, Duty Cycle

= 2%.
FIGURE 2 - DC CURRENT GAIN

-

20

-r

z

:;;:

-

TJ - 250C

2.0
01

03

'"

10

I-

r-

V~E=5civ

"",

~

~
U

.#
Q

5.0

3.0

0.5

10

2.0

50

10

IC. COLLECTOR CURRENT (AMPS

+60V

Com

FIGURE 3 - SWITCHING TIMES TEST CIRCUIT

2 k/5 W

10j.lF
100 V

820
5W

15,750 Hz

100

. -_ _-+....;.F.:,;'.,q Adj

'C

5W

L

MR918

•10 tJF

0.1

25V

(Selected

+

3

5W

Pulse Width Adj
50% Duty Cvcle

220

1.8 k

2

10"F
'50 V

5W

DRIVER TRANSFORMER (Tl)
L

c

V)

,on

470 pF

IC

1500

C

A

mH

"F

5.0

0.575

0.018

Com +125 V

Motorola part number 25068782A-QS·1/4" laminate "e" iron cor•.
Primary Inductance - 39 mHo Secondary Inductance - 0.22 mHo
Le.kage Inductance with primary shorted - 2.0 J,lH. Primary 260
turns, #28 AWG enamel wire, Secondary 17 turns, #22 AWG
enamel wire.

1-658

MJ12010

®

MOTOROLA

10 AMPERE

HORIZONTAL DEFLECTION TRANSISTOR

NPN SILICON
POWER TRANSISTOR

... specifically designed for use in CRT deflection circuits.
•

Coliector·Emitter Voltage - VCEX ; 950 Volts

•

Glassivated Base·Coliector Junction

•

Forward Bias Safe Operating Area

•

Switching Times with Inductive Loads tf = 0.5jls (Typ) @ IC = 5.0 A

@

950 VOLTS
100 WATTS

50 jlS ; 30 A. 300 V

MAXIMUM RATINGS
Symbol

Value

Unit

VCEO(sus)

400

Vdc

VCEX

950

Vdc

VEBO

5.0

Vdc

Collector-Current - Continuous

IC

10

Adc

Base Current - Continuous
Emitter Current - Continuous

IB

5.0

Adc

IE

15

Adc

Total Power Dissipation @ T C = 2SoC
TC = 100°C

Po

100
40
0.8

Watts
Watts
W/oC

TJ. T stg

-65 to +150

°c

Symbol

Max

Unit

ROJC

1.25

°CIW

TL

275

°c

Rating
Coliector·Emltter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Derate above 2SoC
Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8" from Case for 5 Seconds

STYLE "

PIN 1. BASE
2. EMITTER
CASE·COLLECTOR
Q

u

FIGURE 1 - TEST CIRCUIT

NOTES
1. DIMENSIONS a AND v ARE DATUMS.
2.
IS SEATING PLANE AND DATUM.
3 POSITIONAL TOLERANCE FOR
MOUNTING HOLE O.

m

Com
2k16W

82.

5W

I t 11.13(0005)(31 T Ive I
FOR LEADS;

I

t I 1.13 (0.005IeT I Ve I nel

4. DIMENSIONS ANO TOLERANCES PER

ANSI YI4.5, 1973.

MRS1B

ISelected
1500111

INCHES

MIN

10llF

SOV

Pul.. WktthAdj

&enl Duty C:ycle

MAX
1.550

0.830

,.n

0.250 0.300
0.038 0.043
0.055 0.070
1.187 BSC
0.430 BSC
0.215 BSe
0.665 BSe
0.440 0.480
0.150 0.165

5W

DRIVER TRANSFORMER ITn

"rt

Motoro1,
numblll' 2tiD68782A..QII·1/4" .'mln," "£" Iron co....
Prlm,ry Inductllnc, - 39 mH, Secondlory 'nducunc, - 0.22 mH,
LMk.,. 'nduCUlnc. with prlrMry .noruel' - 2.0 pH Prlrfta"y 210
turnt, # . AWG en'mel wire, Second." 17 turn., #22 AWG

1.050

4.83
3.81

4.19
CASE 1·05

1-659

0.190
0.150

0.210
0.165

MJ12010

ELECTRICAL CHARACTERISTICS

I

(TC

= 25°C unle.. otherwise notod)

I

Charactaristic

Symbol

Min

Typ

Max

Unit

VCEO(su,)

400

-

-

Vd.

ICES

-

-

I,D

mAde

lEBO

-

-

1.0

mAde

VCEI,at)

-

-

5.0

Vd.

VBEI,at)

-

-

1.5

Vd.

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage
(lC

= 50 mAde, la = 0)

Collector Cutoff Current
(VCE = 950 Vde, VaE = 0)
Emitter Cutoff'Current
(V BE = 5.0 Vde, IC = 0)
ON CHARACTERISTICS (1)

Collector-Emitter Saturation Voltage
(lC

= 5.0 Ade,

la = 1.2 Ade)

Base-Emitter Saturation Voltage
(lC

= 5.0 Ade, la = 1.2 Adc)

Second Breakdown Collector Current with Base Forward Biased
Current-Gain - Bandwidth Product
(lC = 0.1 Ade, VCE = 5.0 Vde, fto,t

= 1.0 MHz)

Output Capacitance
(Vca

= 10 Vde,IE =0, f = 0.1

-

See Figure 5

ISlb

DVNAMIC CHARACTERISTICS
fT

-

6.0

-

MHz

Cob

-

150

-

pF

MHz)

SWITCHING CHARACTERISTICS
Fall Time
(lC = 5.0 Ade, IBI

= 1.2 Ad., LB = B.O I'H, See Figure
= 2%.

1)

(1) Pul,e Te't: Pulse Width .. 300 1", Duty Cycle

FIG.URE 2 - DC CURRENT GAIN

FIGURE 3 - COLLECTOR SATURATION REGION

40

....-

~

25 0 CI

10

II II

TJ'I000 C

VCEI.

~

Uv
-

,4

"\'

Ie'" I A

,0

\1\

l'

8

04

6.0

,
001

0.1

0.2

0.3, 0.5 0.1 1.0
2.0
IC, COLLECTOR CURRENT (AMPI

5.0

3.0

1,0

4

c;;

~

~

o
>

;:.-

1.0
Q.

loooc

0.4

0.04 0.06

30
20

-

.-'

VCE(.." IlIIC/ls • 3.0
0.1

0.2

0.4

0.6

1.0

0.05

01

02

05

10

2,0

7i

V

,/

k"25tc

1.0 ms

~ 10
$ 5.0

....

~

.

B

o. 6

0.2

001

50

100

~V f.,.....,

VaE(sa'l IlIIC/I~3.0

a

~

'e- BASE CURRENT (AMP)

L

T'2Y f-

!:;
o
~

1\ I'

FIGURE 5 - MAXIMUM FORWARD alAS
SAFE OPERATING AREA

I I
I I

"

\

I-

10

FIGURE 4 - "ON" VOLTAGES

1. 2

\

\

o
4.0

3. 4 A 5A S 7A SA

\

2.0
1.0
0,5

0

~
0

'"i!

0.2
0.1
0.0

de

t=

TC=250 C

Bonding Wire Limit
Thermal Limit (Single Pulse)
Second Breakdown Limit

J
2.0

4.0

1.0

IC, COLLECTOR CURRENT (AMP)

Single Pulse

2.0

4.0 6.0 10
20
40 60 100
200
VCE, COLLECTDR·EMITIER VOLTAGE (VOLTS)

400

700

NOTE.
Thert art two limitations on the power handling ability of a translnor: average junction temptrtture and second breakdown. Safe operating area CUNIS mdlC8tf! Ie - VeE limits of the transistor
that must be observed for reliable operation, 1.1., the transistor must not be subjected to greater
d.Dlpatlon than the curves mdteate.
The 50 14 and 1 ms curves Ire beyond the thermal limits of this part. However, the parts will
.. MYfI a transient that remains Wlthm th. . S8 hmlts Without failing.

1-660

®
,

MJ12020
MJ12021
MJ12022

MOTOROLA

III

. '. Desig-nt'r's Data Sheet

5.0,8.0 and 15 AMPERE

NPN SILICON
DEFLECTION
POWER TRANSISTORS
HIGH PERFORMANCE NPN
DEFLECTION TRANSISTORS

850 VOLTS
126,160and176 WATTS

These transistors are designed for high resolution video systems,
such as, high density graphic displays, data terminals, video
scanners ... wherever high frequency deflection is required.

Designer's Dat8 for

"Worst Case" Conditions

•

Fast Turn-Off Times

•

Maximum Storage and Fall Times Specified at 100°C

•

Operating Junction Temperature Range -65°C to +200oC

•

High f,- of 15 MHz

The Designers Data Sheet permits
the design of most circuits entirelv from
the information presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" design.

MAXIMUM RATINGS
Rating

Svmbol MJ12020 MJ12021 MJ12022

Unit

Collector-Emitter Voltage

VCEO(sus)

450

Vdc

Collector-Emitter Voltage

VCEV

850

Vdc

6.0

VE8

Collector Current -

Ie
ICM

5.0
10

8.0
16

15
20

Adc

IS
ISM

4.0
8.0

6.0
12

10
15

Adc

-Peak(l)
Base Current -

Continuous

-Peak(l)

Total Power Dissipation
@TC;25 oe
@TC;lOOoC

Watts

Po
125
71.5
0.714

Derate above 25°C
Operating and Storage Junction
Temperature Range

150
85.5
0.86

175
100
1.0

-6510 +200

TJ, Ts1g

,

CASE

Vdc

Emitter Base Voltage
Continuous

F -

STYLE 1
PIN 1.

W/oC

°c

NOTES
1. DIMENSIONS Q AND V ARE DATUMS
2.
IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE fOR
MOUNTING HOLE Q.

CD

1*1~13ID.OO5)e

ITlvel

FOR LEADS'

I *1'·13co.o05)e TI vel·el
4. DIMENSIONS AND TOLERANCES PER

ANSIYl4.5,1913

THERMAL CHARACTERISTICS
Thermal Resistance,
Junction to Case

R8JC

Maximum Lead Temperature
for Soldering Purposes:

TL

1.4

I

1.17
275

I

1.0

°C/W

°e

1IS" from Case for 5 Seconds
(1) Pulse Test: Pulse Width

=5 ms, Duty Cycle E;;; 10%.
CAS!: 1-06
TO-204AA (TO-3)

1-661

MJ12020,i\f'IJ12021,

Ill·'
.

M~12022

.
ELECTRICAL CHARACTERISTICS (TC

=25°C unless otherwise noted)
Symbol

Min

VCEO(sus)

450

-

-

-

-

0.25
1.5
2.5

mAdc

-

1.0

mAde

Characteristic

Typ

Max

Unit

OFF .CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1)
(lC~ 100 mA, IB = 0)
Coliector'Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1 ..5 Vdc)
(VCEV 850 Vdc, VBE(off) 1.5 Vdc, TC = 100°C)

'CEV

Collector Cutoff Current
-(VCE • 850 Vdc, RBE = 50 n, TC ;, 100°Cl

ICER

E~itter Cutoff Current

'EBO

=

(V€B

=

=6.0 'Vdc, IC =0)

Vdc
mAdc

~

-

SECOND BREAKDOWN
Second Breakdown Collector Current ,with Base Forward Biased

See Figures 19,21 or 23

Turn-Ofl SOA with Base Reverse Biased

See Figures 20, 22 or 24

ON CHARACTERISTICS ,I)
Collector-EmItter Saturation Voltage

=

(IC: 3.0 Adc, 'B 0.6 Ade)
(lc 5.0 Adc, Ie: 1.0 Adc)
(lc 10 Adc, IB 2.0 Adc)

=
=

=

Base Emiller SalUration Voltage
. (lc = 3.0 Adc, is 0.6 Adc)
(lc ~ 5.0 Adc, Ie 1.0 Ade)
(IC 10 Adc, Ie: 2.0 Adc)

=

=
=

DC Current Gain
(IC", 5.0 Adc, VCE 5.0 Vde)
(Ie: 8.0 Adc, .vCE:. 5.0.vdc)
. (IC: 15 Adc, VCE: 5.0 Vde)

=

VCE(sat)
MJ12020
MJ1·2021
MJ12022

Vde

-

-

-

-

-

-

-

-

5.0
5.0
5.0

-

-

15
15
15

-

-

-

-

-

-

Vde

VBE(sat)
MJ12020
MJ12021
MJ12022

1.2
1.2
1.2
1.5
1.5
1.5

-

hFE
MJ12020
MJ12021
MJ12022

-

DYNAMIC CHARACTERISTICS
Cu'rrent Gain Bandwidth Product
. ,14C : 0.3 Adc, VCE' 1·0 Vdc, I: 1.0 MHz)
~IC = 1.0 Adc, VCE '10 Vde, I = 1.0 MHz)
. (IC = '1.3 Adc, VCE : 10 Vdc, I = 1.0 MHz)

=

0l:ltput Capacitance.

(Vee

=10 Vdc, IE ='0, 1= I.? kHz)

MHz

IT
MJ12020
MJ12021
MJ12022

~

pF .

Cob
MJ12020
MJ12021
MJ12022

11) Pulse T~st: Pulse ~idth ~ 300 ,.,.5,' Duty Cycle ~2%.

1-662

-

200
350

400

MJ12020,MJ12021,MJ12022

II.

ELECTRICAL CHARACTERISTICS (Te; 25°C unless otherwise noted)
Symbol

Characteristic

Min

Typ

Max

Unit

ts
tf
ts
tf

-

440

1200

ns

-

130
550

-

200

300
1500
500

tf

-

175

ts
tf
ts

-

550

1200

100
750

300
1600

tf

-

lS0

500

tf

-

300

ts

-

S20

lS00

100
1100
130

300
2500
400

350

-

SWITCHING CHARACTERISTICS

MJ12020
Inductive Switching, Clamped Drive
Storage Time

(Ie; 3.0 Adc. la ; 0.6 Adc,

Fall Time

Vec; 40 Vdc, VaE(off) ; 4.0 Vdc,
Pulse Width; S.O P.s,
Duty Cycle';; 2%) See Table 1

Storage Time

Fall Time

TJ; 25°C
TJ; 100°C

Inductive Switching. Series Base Inductance

Fall Time
(Ie; 3.0 Adc, la; 0.6 Adc, LS; 24 p.H) See Table 2

-

ns

MJ12021
Inductive Switching. Clamped Drive
Storage Time

Fall Time

(Ie ; 5.0 Adc, la ; 1.0 Adc,

Storage Time

Vee; 60 Vdc, VaE(off) ; 4.0 Vdc,
Pulse Width; S.O P.s,

Fall Time

Duty Cycle';; 2%) See Table 1

TJ; 25°C
TJ; 100°C

ns

Inductive Switching. Series Base Inductance

Fall Time
(Ie; 5.0 Adc, la; 1.0·Adc, LS; 24 p.H) See Table 2

-

ns

MJ12022
Inductive Switching, Clamped Driva
Storage Time

Fall Time

(Ie; 10 Adc, la ; 2.0 Adc,

Storage Time

Vee; 120 Vdc. VaE(off) ; 4.0 Vdc,
Pulse Width; S.O p.s.

Fall Time

Duty Cycle';; 2%) See Table 1

TJ; 25°C
TJ; 100°C

tf
ts
tf

ns

Inductive Switching. Series Base Inductance

Fall Time
(Ie; 10 Adc. 18; 2.0 Adc, LS; 24 p.H) See Table 2

tf

1-663

-

ns

MJ12020. MJ12021. MJ12022

lIB

TYPICAL ELECTRICAL CHARACTERISTICS

------------------------------MJ12020------------------------------FIGURE 1 -

60
50

-

30

III

~

N

~

55°C

30
0.1

-

2.0

II II

,

'"
~

0.5

\

2.0

3.0

5.0 7.0

[ 1111

0.1
0.03

10

0.05 0.07 0.1

IC. COLLECTOR CURRENT lAMPS)

"-

\

........

"-

"

TJ = 25°C
..:. 02 I--

1.0

5A

\

\

0.3

~S

0.5 0.7

4A

\3A

0:': 0.7

~

0.3

2A

>

VCE = 5.0 V

0.2

II II

1\ IC = 1 A

1.0

w

I

f--

.
."'
.~

g

I

TJ = 100°C

2~

5.0

FIGURE 2 - COLLECTOR SATURATION REGION

DC CURRENT GAIN

..........
0.2

--

0.3

05 07

i'-..

r-

1.0

20

3.0

lB. BASE CURRENT lAMPS)

------------------------------MJ12021
FIGURE 4 - COLLECTOR SATURATION REGION

FIGURE 3 - DC CURRENT GAIN
100

10

50

TJ = 100°C

z

CI

"'

l-

i13
'"'...
CI

20

25°C

10

-

~
~
w

.
"'0:':

r-....
r---

05

>

....

'"
~
iii

-55°C

~:::j

1.0
0.2

05

1.0

2.0

5.0

~8.0A

,\

0.2

...
~

10

0.1

20

0.1

0.2

IC = 2 0 A

m
05

It;. COLLECTOR CURRENT lAMPS)

..........

~OA

-

4.0 A

"-

S

VCE = 5.0 V

2.0

\

\

d=

5.0

~

\

\

r-....
TJ

= 25°C

II
2.0

10

5.0

10

lB. BASE CURRENT lAMPS)

---------------------------- MJ12022 ---------------------------FIGURE 6 - COLLECTOR SATURATION REGION

FIGURE 6 - DC CURRENT GAIN
50

r--

;z

20

'"'.

10

I-

~

13

~

TJ 1= 1100~~
25°C

<1

"'

.

20

\

~

1\

~ 1.0

r.... r--.
r--

""~
>

\

II

H

07

ffi as

lOA

~

i!i
'" 03

13

~

;

50

02

0.5

10
20
50
IC. COLLECTOR CURRENT lAMPS)

10

IC = 1 A

5A

I

II

...

~

.J;

VCE - 5 0 V

30

0.2

S

20

1-664

I

0.1
0.02

005

II

i'...
TJ = 25°C

I I II

01 02
05
10
20
lB. BASE CURRENT lAMPS)

50

10

MJ12020, MJ12021, MJ12022

l1li

TYPICAL ELECTRICAL CHARACTERISTICS

-------------------------------MJ12020
FIGURE 7 - COLLECTOR·EMITTER SATURATION VOLTAGE

FIGURE B -

g
~
w

30

~

20

'"

~,.

~w

/

10

...,..

070

~

""', Ill: 5

Ill: 5
TJ : 25°C

~
~
!

/'

f--

010

15

~

/.

V

'I

020

'"

131 10
f- TJ - 100°C

050 f - - Ill: 10
f-f-- TJ : 25°C
a,

20

~

L

1.0

~

2i
t;

BASE·EMITTER VOLTAGE

3.0

50

;i\ 050

1,\

r--

Il,: 10

w

TJ = 25°C

TJ

.g'

~

005
01

05

02

10

2.0

50

03 0
01

10

05

02

10

=100°C

1120

50

10

IC. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

MJ12021
FIGURE 9 - COLLECTOR·EMITTER SATURATION VOLTAGE

~

0

~

FIGURE 10 - BASE·EMITTER VOLTAGE

10

0

50

5

JJ
131: 5
TJ: 25°C

~

,.~

2.0

'"

1.0

0

~
!a,

0.5

~

0.2

~

1/

Ill: 10

0

t;

131: 5
TJ: 25°C

131- 10
TJ: 100°C

HE:: P5::V

0.2

10
TJ: 100°C

/.

P'"

I--""

III

0.1
01

-" l'IlI:

5

TJ - 25°C

0.5

1.0
2.0
IC. COLLECTOR CURRENT (AMPS)

5.0

0.2
01

10

02

1.0
2.0
05
IC. COLLECTOR CURRENT (AMPS)

5.0

10

MJ12022 -----------------------------FIGURE 11 - COLLECTOR· EMITTER SATURATION VOLTAGE

FIGURE 12 - BASE·EMITTER VOLTAGE

50

15

~

3.0

~

20

~

10

~
~

'"
<[

,.El

ffi 0.70

!::

'"~

050
030

~I

,I
Ill-lo
TJ - 25°C

o

..- ..-""" I'-

~007

03

05

~
:;;

070

r- r-r- 75°C

TJ - 25°C

,-

-+-100°C

----

=

040

:z 030

,
Ill: 25°C
5
TJ:

07 10
20 30
5070
IC. COLLECTOR CURRENT (AMPS)

I

10

~ 050

t>""

'-""'"

010
005
01502

131: 10
TJ: 100°C

I--" . . . . . . . y ...

~ 020
u

ill = 10

iii

10

I~

~
~ 020

15

1-665

015
o 15 020 030

050 070 1 0
20 30
50 7 0
IC. COlLECTOR CURRENT (AMPS)

10

15

MJ12020, MJ12021, MJ12022

lIB

TYPICAL DYNAMIC CHARACTERISTICS

MJ12020
FIGURE 14 - FALL TIME

FIGURE 13 - STORAGE TIME

1000

500
300

700

.......

p ..... V

--

. . v---

to-

=25°C
ill = 5,0
VaEloll) = 3.0 to 5.0 Vdc

,TJ

V

TJ =25°C
ill = 5.0
VaE(olf) = 3.0 to 5.0 Vdc

~

~

100

_
70
50

100
0.5

0.7

30
10
2.0
IC. COLLECTOR CURRENT lAMPS)

0.5

50

07

1.0
30
20
IC. COLLECTOR CURRENT (AMPS)

50

MJ12021
FIGURE 16 - FALL TIME

FIGURE 15 - STORAGE TIME

1000

150

800

:[
!iii
i=
w

<.0

./
300

~

80

.......

~

L---

,.....-

!iii
i=

~ 200

-"'

50

::j

TJ = 25°C
ill = 5.0
VaElolf) =3.0 to 5.0 Vdc

0

--

100

./

./

500

:;:

= 25°C
ill = 5.0
VaE(ott) = 3.0 to 5.0 Vdc

TJ

"" 30
20

100
1.0

2.0
30
5.0
IC. COLLECTOR CURRENT lAMPS)

8.0

15
10

10

8.0

20
30
5.0
IC. COLLECTOR CURRENT (AMPS)

10

MJ12022
FIGURE 17 - STORAGE TIME

FIGURE 18 - FALL TIME

1500

300

1000

...........

....

200
TJ =25°C
ill = 5.0
VaElolf) = 3.0 to 5.0 Vdc

150 -

......,/

./

,/
200

V

100
1.5

V

2.0

TJ = 25°C
ill = 5.0
VaE(olf) = 3.0 to 5.0 Vdc

3.0
50
8.0
IC. COLLECTOR CURRENT (AMPS)

-

10

50

15

1-666

--

30
1.5

2.0

V

/

./

....-

V

3.0
5.0
8.0
IC. COLLECTOR CURRENT lAMPS)

10

15

MJ12020, MJ12021, MJ12022

SAFE OPERATING AREA INFORMATION

MJ12020
FIGURE 19 -

MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

10

10 ~s

5.0

"

10
050
TC

~

~ 010

BONDING WIRE LIMIT
- - - - - THERMAL LIMIT
SECOND BREAKDOWN LIMIT

0.02
00 I

5.0 7.0

10

20

50

70

1ii

70

'"~

-

E

80

'"'"
t;j
:::
8

de

t:;

005

~

~

I ms

25°C

020

'"
'-'

\
\

~ 90

I"

~

~

10

~

:;

~
:; 20

!

FIGURE 20 - MAXIMUM RATED TURN-OFF
SAFE OPERATING AREA

:;-

g
100

200

TJ';; 100°C _

I---

60
50

\

40
30

\

2.0

\

10

o
o

300 450

P'~4 I _ r---

\

VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS}

100

200

V8E(offj = 3 0 TO 50 V

I

/1

f--

I

K

500

700

850

1000

11

MJ12021

1.1

FIGURE 21 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

i~

FIGURE 22 - MAX'MUM RATED TURN-OFF
SAFE OPERATING AREA
16

\
\

\
o
o

0.02 ~-,-,..u._-L--'-----1.---'--1.....LLJ..JLL--'---'L-....L~
5.0
10
20
50
100
200 300 450
VCE. COLLECTOR·EMIITER VOLTAGE (VOLTS}

"

fl,;;> 4.0
TJ';; 100oC- f--

\

\

VBE(off} = 3.0 TO 5.0 V I---

I

.A

~.l

I

.,

200
400
600
BOO 850
VCE(pkj. PEAK COLLECTOR·EMIITER VOLTAGE (VOLTSj

1DOD

MJ12022
FIGURE 24 - MAXIMUM RATED TURN-OFF
SAFE OPERATING AREA

FIGURE 23 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA
20

~

10 ~s

10

~

:;

~

50

...

:;

~
~

1:5
IE
13
~

20

050

~

8
E

010
0.05

I ms

I
'"
'"

'OTC - 25°C

==

-

BONDING WIRE LIMIT
- - - THERMAL LIMIT
SECOND BREAKDOWN LIMIT

"

20
18

\\

~

de

I 0

~
8

'"
~

1'-

14

1\
10

I--- fl,;;> 4
I--- TJ';; 100°C

§

l

VBE(offj = 3.0 TO 5.0 V

\
I\.

6.0

~

......

2.0

I

002
50

10

'.1

,i

VCE(pkj. PEAK COLLECTOR·EMIITER VOLTAGE (VOLTSj

20
30
50 70 100
200 300
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS}

450

1-667

100

150
200 250
350
450
600 700 85D
VCE(pkj. PEAK COLLECTOR·EMITIER VOLTAGE (VOLTSj

MJ12020, MJ12021, MJ12022

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .. the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figures 19. 21 and 23 are based on TC =
25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid tor duty cycles to 10% but
must be derated when TC ;;. 25°C. Second breakdown
limitations do not derate the same as thermal limitations.
Allowable current at the voltages shown on Figures 19.
21 and 23 may be found at any case temperature by using
the appropriate curve on Figure 28.

TJ(pk) may be calculated from the data in Figures 29. 30
or 31. At high case temperatures. thermal limitations will
reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
TURN-OFF
In deflection circuits. high voltage and high current
normally do not occur simultaneously during turn-off with
the base-emitter reverse biased. The safe level of operating these devices is specified as the Turn-Off Safe
Operating Area. and represents the area the lead line may
traverse during reverse biased turn off. For reliable operation. all abnormal operating conditions should be
checked for operation within this area.

FIGURE 25.- CAPACITANCE VARIATION
MJ12020

FIGURE 26 - CAPACITANCE VARIATION
MJ12021

10000

10000

~ 1000

~'OOO
u

g
~

Cib
TJ = 25°C

No

~

-

~~

TJ = 25°C

Cib

z

5Ol':

Cob

5.;

100

1.0

10

100

Cob
100

10
0.1

850

1.0

VR. REVERSE VOLTAGE (VOLTS)

FIGURE 27 - CAPACITANCE VARIATION
MJ12022

100

850

FIGURE 28 - POWER DERATING
100

~ t--...

"" ""

............

~ 80

"o
t;

..
.

~

Defatmg --II

~ 40
o

"

~

300500850

1-668

Second Breakdown

...... ~

Therma~

60

'"z
;:

5 0 10 20 3D 50 100
0.3 0 5 I 0 20
VR. REVERSE VOLTAGE (VOLTS)

10
VR. REVERSE VOLTAGE (VOLTS)

Derating

...........

"-

..........

r-....

............

"

0

o
o

40

-

80
120
Te CASE TEMPERATURE lOCI

........

160

'" "'"

200

MJ12020. MJ12021. MJ12022

THERMAL RESPONSE
FIGURE 29 - MJ12020
10
01

=

"\.

03
02

t-

IiiiII
~ ~rc:O
>'

2.0 3.0 5.07.010

II II

---

ICIIB' 5

o

02 0.3 0.50.7 1.0

FIGURE 4 - BASE,EMITTER VOLTAGE
2.0

1. 6

..:;

0.1

'B. BASE CURRENT (AMP)

0

o

5A

0

10

FIGURE 3 - COLLECTOR,EMITTER
SATURATION VOLTAGE

2:.

2.5 A

\

4

>
02

1A

'C'O.25A

o

7. 0
5. 0
0.1

TJ' 25°C

J

T)25 0

~

O. S

O.S

0

>
>'

~

4

150°C

o

0.1

02

0.3

05 07

1.0

2.0

30

~~50C
j

0.4

I- ~ ~ ......

TJ' 25°C

5.0

7.0

I

r:::

~- ~500C
11

ij

o

10

0.1

0.2

0.5

0.3

'C· COLLECTOR CURRENT lAMP)

07

10

2.0

30

5.0 7.0

10

!1

!l

IC. COLLECTOR CURRENT lAMP)

1'1
:'1.
"

FIGURE 5 - COLLECTOR CUTOFF REGION

FIGURE 6 - CAPACITANCE
2000

104

L

~

10 3

~

102

....

B

f-- t--TJ'150oC

.,.,.

L

.L

.L
I
-_'I;,

IL
/

125°C

w
'-'

1.

o

~

8
E

10

100°C

1

100

f

.-

75°C

r-- !--REVERSE

~

:;
"

I

0
500
300

c::;
~
~
U

200

FORWARO

i'j

TJ '" 25°C

10

Z

>!

~

!-

10~0

r--..

~r-.

100
0
0

.LVCE'250V=

25°C
10' I
-0.4

-0.2

+0.2

+0.4

0
20
0.1

+0.6

VBE. BASE·EMITTER VOLTAGE (VOLTS)

0.2

0.5

1.0 2.0

5.0

10

2030 5070100 200

VR. REVERSE VOLTAGE IVOLTS)

1-673

,I

J1

5001000

MJ13014, MJ13015

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEO(sus)

RESISTIVE SWITCHING

r-~----------~---'-------'~-O+15

RI

470.

TURN ON TIME

2.

+10V>~1

~

.~

1-0

~~
-z
8

~_2

R212

I B 1 adjusted to
obtllin the forced
hFE desired

son

TURN OFF TIME

PW Varied to Attain

Use inductive sWitching
driver as the ,"put to
the r.sistive tfttcircuit.

le= 1DOmA

All Diodes - 1 N4934
All NPN - MJE2QO
All PNP - MJE21 0

t------~---~--o -5.2

J:

Adjust R1 to obtain 'S1
For switching and RBSOA. R2

<::

250 /.IF

0

For BVCEO(sus). R2 == co

Lead =80mH

Rcoil = 0.7

n

Vee=

LeOlt '" laO ~H
Reails 005 n
VCC"20V

10 V

Vee
RL.'"

V clamp" 250 V
RS adjusted to attain desired 'Sl

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

~

250 V

son

Pulse Width

= 10

lAs

RESISTIVE TEST CIRCUIT

t,

Adjusted to

Obtilln

"

Ie

... LCOllOCpkl

Vee
t2'" LC01IIICpk)

S . . Above for

Oetalled Conditions

-=-

O--H"'W'_~-'

Vclamp

Vee

Test EqUIPment

Scope - Tektronix
475 or EqUivalent

FIGURE 8 - PEAK REVERSE CURRENT

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

,..,.

.......-

,..,

I~

"'clamp_

I~ "-

f---

II

90% Vclamp ~ 90% IC

e---- -

'IV fflf-Jr ' f i - 1--',,-

I- - r " ,

IC""""-

8.0

V
10%V clamp

IB-

-

f-

90% IBl

--\-

ii?

'"

:5
~

I'\.
10%"""'- ~~
ICPK- 2%IC

V

~

L.-- I.----"

----

~

--

2.0

-- --- -- -- -

1.0

~

""""

~

5.0

1-1 f-"~ l VCE

'-

IC" 5A
IB1"lA

1.0

TIME

1-674

5.0
2.0
VBE(off). BASE-EMITTER VOLTAGE (VOLTS)

8.0

MJ13014, MJ13015

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase, However,
for inductive loads which are common to SWITCHMOOE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms

is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN·222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi "" tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifica·
tions which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and t sv ) which are
guaranteed at 1000 C.

RESISTIVE SWITCHING

FIGURE 9 - TURN·ON SWITCHING TIMES

FIGURE 10 - TURN·OFF TIME

10

\0

07
0.5
0.3

~

0.2

~

O. I

~

........

TJ

~ 25 C

.........

ICIIS" \
VCE" 2\0 V
VSElolt)" \ V

20

ICIIS"'~+
d

r--......

TJ = 25°C

30

VCC - 25OV:=

Is

10

If

-" 0.07

~
w

,.

0\

i=

03

07

..........

0.05
02
0.03

""'-..

.........

0.02

'"1""-..

0.01
0.2

01

0.\ 07

0.3

1.0

20

If

1
007
0.0\
01

Id

50

30

70

10

02

03

IC. COllECTOR CURRENT lAMP)

\ 0

20
30
05 07 10
'C, COLLECTOR CURRENT lAMP)

70

10

FIGURE 11 - THERMAL RESPONSE
1

-t-:

71:=0"0.\
5

ROJClt) '" r(t) AIIJC

3 = 02

-

.....

.....- -~

01

'1==.00\

RI/Je(l)" \ 17

--= ;;,..

--

He

W

MJl(

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AI It
, ,~JI.k)

T~ - P~pkl RI/Jelll

7~0.02

-

...-

002

PtrUl

..K

-1

001

--l Ii f-I---- 12

I-- SINGLE PULSE

DO 1
001

I II
002 003

~UTY

00\

01

02

0.3

10

0\
t,

TIME (ms)

1-675

20

30

50

100

CYCLE. 0 ",,/12
200

300

500

lOUD

MJ13014, MJ13015

SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for th818 devices und. the test conditions shown.

III

FORWARD BIAS

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC- VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25 0 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve
on Figure 14.
TJ(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
0

if

100",-

~ 5.0

1.0 ms

5.0

m.

>-

~

10"

0

TC • 250 C t - -

2. 0

Do

de

"-

a

- BONDING WIRE LIMIT
1. o ~ - THERMAL LIMIT
(SINGLE PULSE)
~ O. 5
---SECOND BREAKDOWN LIMIT

~-,-,
o

~

O. 2
~

~o .1
0.05
0.02
4.0

Do

MJ13014~

MJ13015-=
6.0

10

40

20

60

100

200
350

VCE. i:OLLECTOR·EMITTER VOLTAGE IVOLTS)

400

FIGURE 13 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA
0

REVERSE BIAS

It..

TURN OFF LOAD LINE
Or-BOUNDARY FOR MJI3015
r - THE LOCUS FOR MJI3014
IS 50 V LESS
0r-ICilBI"5
r - TJ" 100 0 C

For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load line
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and represents the
voltage-current conditions during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure
13 gives RBSOA characteristics.

l\\\

\\'

.-VBElolf) • 5 V

\ ~

2V

:\.

"

\~ C- 0V

0

~ ~~

0

0
100

200

300

400

500

VCE' COLLECTOR·EMITTER VOLTAGE IVOLTS)

FIGURE 14 - POWER DERATING
100

0

~ t::::",

~ I"'---

1""-

.........

THERMAt'-DERATING

0

B~EAKD6wN_

t"--..

"-

0

SEdoNO
DERATING

~

.......

........
.............

"-

"'"

0

0
40

120
80
TC. CASE TEMPERATURE IOC)

1-676

160

"'

200

""'"

®

MJ13070
MJ13071
MOTOROLA

III

Designer's Data Sheet
5 AMPERE

SWITCHMOOE II SERIES
NPN SILICON POWER TRANSISTORS

NPN SILICON
POWER TRANSISTORS

The MJ13070 and MJ13071 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line-operated switchmode applications such as:

400 AND 450 VOLTS
125 WATTS

•

Switching Regulators

•

Inverters

•

Solenoid and Relay Drivers

•

Motor Controls

•

Deflection Circuits

Designer's Data for
"Worst Case" Conditions
The Designer'S Data Sheet permits
the design of most circuits entirely from
the information presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" deSign.

Fast Turn-Off Times
100 ns Inductive Fall Time @ 25°C (Typ)
150 ns Inductive Crossover Time @ 25°C (Typ)
400 ns Inductive Storage Time @ 25°C (Typ)
Operating Temperature Range -65 to +200°C
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Rating

Symbol

MJ13070 MJ13071

Unit

Collector-Emitter Voltage

VCEO(sus)

400

450

Vdc

Collector-Emitter Voltage

VCEV

650

750

Vdc

Emitter Base Voltage

VEe

6.0

Vdc

Collector Current - Continuous
-Peak(l)

IC
ICM

5.0
8.0

Adc

Base Current - Continuous
- Peak (1)

IB
IBM

2.0
4.0

Adc

Po

125
71.5
0.714

Watts
W/oC

-65 to +200

°C

Total Power DISSIpation @ TC =25°C
@TC; 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ, Tstg

Characteristic
Maximum Lead Temperature for Soldering
Purposes: 1 IS'" from Case for 5 Seconds

v

H

~_.

.

,.'

,
u

.
•

NOTES
1 DlII1ENSIOMS 0 A,.O ARE OATIlMS
2 [iJISSiATI1f6PlANEANDOATUM
3 POSITIONAlTOLEAANCEF'OII
MOUNTING HOLE II

II

!t!'13fOODSleIT!IISI
fOlllEAOS

1+1.13(ODO&l@>T!V@>lo@>1
4 DIMENSIONSANDTOLEAANCESPEII
.....SIY1.s.m3

Symbol

Max

Unit

ReJC

1.4

°C/W

TL

275

°C

(1) Pulse Test: Pulse Width; 5 ms, Duty. Cycle .;; 10%.

CASE 1·05 TO-3 TYPE

1-677

.

.~_.F_;~=~
i

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

~·S5i~

MJ13070, MJ13071

..

ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted)

Characteristic
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1)
(IC ~ 100 mAo IS ~ 0)

Collector Cutoff Current
(VCEV ~ Rated Value. VSE(off) ~ 1 5 Vde)
(VCEV ~ Rated Value. VSE(off) ~ 1.5 Vde. TC
Collector Cutoff Current
(VCE ~ Rated VCEV. RSE ~ 50

n. TC ~

Vde

VCEO(sus)

-

-

-

-

05
2.5

ICER

-

-

30

mAde

IESO

-

-

10

mAde

400
450

MJ13070
MJ13071

mAde

ICEV
~

100°C)

100°C)

Emitter Cutoff Current
(VES ~ 6.0 Vdc. IC ~ 0)
SECOND BREAKDOWN
Second Breakdown Collector Current wIth Base Forward BIBsed

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS (1)
DC Current Gam
(IC ~ 3.0 Ade. VCE

-

80

-

-

-

-

10
3.0
20

-

-

15
15

td
tr
ts
tl

-

003
010
040
0175

005
040
150
050

ps

tsv
te
tIl
tsv
te

070
028
015
040
0.15
010

ps

25°C)

-

20

100°C)

hFE
~

5 0 Vde

Collector-Emitter Saturation Voltage
(IC ~ 3.0 Ade. IS ~ 0 6 Ade)
(lC ~ 5.0 Ade. IS ~ 1.0 Ade)
(IC = 3.0 Ade. IS ~ 0.6 Ade. TC ~ 100°C)

VCE(sat)

Base-Emitter Saturation Voltage
(IC ~ 3.0 Ade. 18 ~ 0.6 Ade)
(lC ~ 30 Ade.ls ~ 0 6 Ade. TC ~ 100°C)

VBE(sat)

Vde

Vde

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCS

~

10. Vdc. IE

~

O. f test

~

10kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage TIme

Fall Time

(VCC ~ 250 Ade. IC ~ 3.0 Ade.
ISl ~ 0.4 Ade. tp ~ 30 ps.
Duty Cycle ,,;;2%. VSEloll) ~ 50 Vdel

Inductive Load. Clamped (Table 1)

Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
(1) Pulse Test PW - 300

(lC(pk) ~ 3 0 A.
IBl ~04Ade.
VSE(off) ~ 5.0 Vde.
VCE(pk) ~ 250 V)

(TJ

(TJ

~

C

tIl
IJ,S,

Duty Cycle ~2%

PI C.!.!;.
16

1-678

050
030

-

MJ13070. MJ13071

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN
50

FIGURE 2 - COLLECTOR SATURATION REGION

I

r-2 00 c

z

«
'"
>-

ia

"" ~
r--- r---..

TJ = 25°C

20

c
'"

i

"'"

VCE=50V

t

20

<=-

0

30

3.0

in
!::i
c

\

'" 1 0

~

~ 05

,'\

~

!

'\1\

SOA- r Ie = IDA

25A "-

02

'"

~

10

f'-...

I

8

7.0

--

03

f= ~TJ - 25°C

~o 05

:>

5.0..
0.08 01

0.2

03
05
10
20
Ie- COLLECTOR CURRENT (AMPS)

30

5.0

003
002

80

003

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

005

01
02 03
05
10- BASE CURRENT lAMPS)

10

20

FIGURE 4 - BASE-EMITTER VOLTAGE
20

0.50

g
c
ii 0.30

in

1

~

':;

V

:>

VV
/ /

I

lif = 5 0

~ 0.20

~

100°';/

~0

~

0:

t; 0.10
~

lif = 5.0

'"<=-

.
~

10

':;

TJ

'"

25°C

~

100°C

~ 05

J = 25°C

..-

I-

~ 07

/

c

'" 0 07

'" 005

~

02
0.05

01

10
0.2 03
05
IC_ COLLECTOR CURRENT (AMPS)

20

30

50

005

02

01

03

05

10

20

30

50

Ie- COLLECTOR CURRENT (AMPS)

FIGURE 5 - COLLECTOR CUTOFF REGION

FIGURE 6 - CAPACITANCE
10K

./

I

./

/

-

-TJ-150 oC

m'c
100 0 C

1

....

./

L

C,b

'e 1000 C=

L

'";:0z

I

.- /

TJ

r--

<3

25°C

;;:

~.

15 0 C

f - - r--REVERSE

F- ~
f-- t -

I

FORWARD

100

Cob

-'VCE=250V=

25 0 C
10

10- 1

-0.4

-0.2

+0.2

+0.4

10

+0.6

30 50

10

30

50

100

VR_ REVERSE VOLTAGE (VOLTS)

VBE_ BASE·EMITTER VOLTAGE (VOLTS)

1-679

300 500 1000

MJ13070, MJ13071

TABLE 1 - TEST CONOITIONS FOR DYNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEOtsusl

1 H P 2141
or :~UlV

'"Z

t

0...JL

--r

.... 0
::1-

... !:
ZQ
-Z

1 .J

10 #-IF

RBI

TURN ON TIME

I.~:

tjA

fr

181 adjusted to
obtain the foreed

10 ",F

50

'

0

U

-

500

PW Vaned to Attain

IC.:l0DmA

2N6191

"

~

~-35V

20

100

"
20

~

j ' V ~llV

002_F

,

°lf

-tl0V>~O'

RESISTIVE SWITCHING

..,

hFE d."red

52N5337

l

TURN OFF TIME

Use Inductive switching
driver a. ttle input to
the reslstivil te.t Circuit .

6-v

100

AdJust R 1 to obtam I B 1

For sWitching and RBSOA. A2 "" 0
For BVCEO(sus), R2 '"

.... '"
-w

::1::1

U ...

!!:<

L eol' = BO mH

vee

00

Leod . i80 j.lH

= 10 V

Vee

~

VCc~250V

v clamp - 250 V
Fie adjusted to atta." deSired ISl

R coll - 005 n

R col .'"01U

2Q V

RL = a3B
PulseW,dth= 10",s

U>

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

'":5....

,

U

;:.39

If:

Input

ij

....
'"....W

r

S•• Above for

Equivalent

Oeteiled Condltlonl

2

I
I
I

lN4937
or
vCl amp .

'e

1
I Reoll

I
I Leo ••

"t

l'f21t "~'.m"d.

"rvc'~b

Vee

Vclamp

~ i,~sJ
0.1 n

T,me

---1-.,-1

/"
IC"""'"

-

VCE(pkl_

'\

90% VCE(pkl

-'"

I---l '--I,~
10% VCE(pkl

- --\- -- --- -90% 181

\

'-'"

-

f--

At

vee

Vee

Vclemp

_.

Test EqUipment
Scope - Tektronlll
475 or Equlvelent

-

"-

--

10",'2"u Ie
IC pk

- -

7.0

ir
:;;

J,\ 90% IC(pkl

V
18-

''~
J.
~ -=-

I, 

VBE(olf)

\

400

500

600

1
700 750

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 14 - POWER DERATING
100

l

'"
0

G
:t

'";::z

~

80

f--60

........... I--..

SECON~ 8REAKOO~N_ -

"'"I"'" i'-. I""--

THERMAL
DERATING

r--...

t'-...

g 40

I'...

..
0

"

20

o
o

40

80

120

TC, CASE TEMPERATURE (OC)

1-682

.........

-.....

~

1Z

-

DERATING

"" "'"

160

200

®

MJ13080
MJ13081
MOTOROLA

Designer's Data Sheet
B AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCH MODE II SERIES
NPN SILICON POWER TRANSISTORS

400 AND 450 VOLTS
150 WATTS

The MJ13080 and MJ13081 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line-operated switchmode applications such as:
•

Switching Regulators

Designe,'s Dat8 for
"Worst Case" Conditions

• Inverters
•

Solenoid and Relay Drivers

•

Motor Controls

•

Deflection Circuits

The Designer's Data Sheet permits
the design of most circuits entirely from
the Information presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" deSign.

Fast Turn-Off Times
100 ns Inductive Fall Time @ 25°C (Typ)
150 ns Inductive Crossover Time @ 25°C (Typ)
400 ns Inductive Storage Time @ 25°C (Typ)

10DoC Performance Specified for:
Reverse-8iased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Symbol

MJ13080 MJ13081

VCEO(sus)

400

450

Vdc

Collector-Emitter Voltage

VCEV

650

750

Vdc

PINl

VEB

6.0

IC
ICM

8.0
12

Adc

Base Current - Continuous
-Peak(1)

'B
'BM

3.0
6.0

Adc

Total Power DisSipation @ TC::;:. 25°C
@ TC ~ 100C C
Derate above 25°C

Po

150
85.5
0.86

Watts

-65 to +200

cc

Collector Current - Continuous
-Peak(1)

Operating and Storage Junction
Temperature Range

•

Q

V

•

. . . . . . .- - . .
• ~.

H

,
u

TJ, Tstg

.
R

NOTES
OlMEN510NSOANDVAREOATUMS
2 WISSEATINGPLANEANOOATUM
3POSITlO"'ALTOLERANCEfOR
MQUNTiNGHQLEQ

1

w/oc

1.lt 1l(OOOSleITlv@!
FOR LfAOS

1+II131000510Tlv®lael

Characteristic
Thermal Resistance, Junction to Case

Maximum Lead Temperature for Soldering
Purposes: 1ISH from Case for 5 Seconds
~

~
-

Vdc

40lMENSIOliSANOTQLERANCESPER
ANSI Yt4 S. 1913

THERMAL CHARACTERISTICS

(1) Pulse Test: Pulse Width

~.~l:'9·m"

Unit

Collector-Emitter Voltage

Emitter Base Voltage

I
I

\

Operating Temperature Range -65 to +200°C

Rating

.I

Symbol

Max

Unit

R6JC

1.17

cC/W

TL

275

°C

5 ms, Outy Cycle .;; 10%.

CASE 1-05 TO-3 TYPE

1-683

2

BASE
EMITTER

CASE COLLECTDR

MJ130ao.· MJ13081

ELECTRICAL CHARACTERISTICS (TC: 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1)
(IC: 100 mAIB: 0)

Vdc

VCEO(sus)
MJ130BO
MJ130Bl

-

-

-

-

0.5
2.5

400
450

Collector Cutoff Current
. (VCEV: Rated Value, VBE(off): 1.5 Vdc)
(VCEV: Rated Value, VBE(off): 1.5 Vdc, TC: 100°C)

ICEV

Collector Cutoff Current
(VCE : Rated VCEV, RBE : 50

ICER

-

-

lEBO

-

-

n, TC:

mAdc

3.0

mAdc

1.0

mAdc

100°C)

Emitter Cutoff Current
(VEB : 6.0 Vde, IC : 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS (1)
DC Current Gain
(lC: 5.0 Ade, VCE : 3.0 Vde

-

hFE

Collector-Emitter Saturation Voltage
(lC: 5.0 Ade, IB: 1.0 Ade)
(lC: B.O Ade, IB: 1.6 Ade)
(lC: 5.0Ade,IB: 1.0 Adc, TC: 100°C)

VCE(sat).

Base-Emitter Saturation Voltage
(lC: 5.0 Ade, IB : 1.0 Adc)
(lC: 5.0 Ade, IB: 1.0 Ade, TC: 100°C)

VBE(sat)

B.O

-

-

-

-

1.0
3.0
2.0

-

-

Vde

-

-

Vde

-

1.5
1.5

0.025
0.10
0.50
0.15

0.05
0.50
1.50
0.50

I'S

0.75
0.22
0.175
0.40
0.15
0.10

2.20
0.40
0.35

I'S

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB

= 10 Vde, IE: 0, f test :

1.0 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time

(VCC : 250 Vde, IC : 5.0 Ade,
IBl : 0.7 Ade, tp: 30 I's,
Duty Cycle ';;2%, VBE(off) = 5.0 Vde)

td
tr
ts
tl

-

tsv
tc
tfl
tsv
te
tli

-

-

Inductive Load. Clamped (Table 1 )
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time

(lC(pk) : 5.0 A,
IBl : 0.7 Ade,
VBE(off) : 5.0 Vde,
VCE(pk) : 250 V)

ITJ: 100°C)

(TJ: 25°C)

(1, Pulse Test: PW - 300 P.s, Duty Cycle ~2%.

ill:.!£.
18

1-684

-

-

-

-

MJ13080. MJ13081

III

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN

,

50
100°C

...!!1

30

....III
...

20

0-

:::::

II:

=

-

10
in 7.0
5.0

-

co

i

"r\

......

TJ = 25°C

2.5 A

IDA

S.O A

~
~

0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMPS)

-

0.3
0.2

B

I~

t'J

,. 0.1
0.1

15

\

\

!

FIGURE 3 - COLLECTOR· EMITTER
SATURATION VOLTAGE

0.2 0.3

..,;;;-

O.S 0.7 1.0
2.0 3.0
Is. BASE CURRENT (AMPS)

5.0 7.0 10

FIGURE 4 - BASE·EMITTER VOLTAGE

iil

3.0

S. 0
~ 3. 0
... 2. 0

I.

Ill= 5.0

in

t::; 2.0

...~

lil
!:;

g 1.0
~ O. 7
! o. Sf--- -JlI= S.O

..

~

!:;
Q

;; 1.0

~ O.3
:! o. 2

I

8

TJ = 2SoC

~

7.SA

1.0
o. 7
... O.S

7.0
0.3

,
'\

~

.!'."

VCE = 5.0 V

3.0

~ 2.0
$!

'r--...I\

.It 10

5.0
0.150.2

TJ = 2SoC

,.S

o. I

"'0.0 7
0.05
0.1

0.2

..,.
0.3

-TJ=25°C

~

:.-

!0.7

~

~
;:Ii O.S

~P
100°C

H

i

0.5 0.7 1.0
2.0 3.0
Ie. COLLECTOR CURRENT (AMPS)

0.3
0.1

S.O 7.0 10

II
0.2

0.3
O.S 0.7 1.0
2.0 3.0
Ie. COLLECTOR CURRENT (AMPS)

,
TJ "I500C
1250C

1/

./

t-- r-REVERSE

10 K
~

FORWARD

f-'- Cib

I

,

./

IOOOC
75"C

I

/

S.O 7.0 10

FIGURE 6 - CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION

104

---

100°C

,

'i

TJ = 2SoC

iiI 000

g
~
u

....

100

F

F

Cob

'"'""

J'VCE"250V=

2SOC
10- I
-0.4

-0.2

+0.2

10
1.0

+0.4

VIE. IASE·EMITTER VOLTAGE (VOLTS)

1-685

10
100
VfI. REVERSE VOLTAGE (VOLTS)

lOGO

MJ13080, MJ13081

TABLE 1 - TEST CONOITIONS FOR DYNAMIC PERFORMANCE

100

"

1 ~

or:b,v

20

+
~

0

..z

=-351J

+10V~Ol

2.

• ...J""L

,OMF

18~:

pr

IB 1

10"F

50

+

-Z
0
U

-=

Y

-

500

PW Vafled to Att •• n
IC'"'OOmA

TURN ON TIME

~A

1

~2

2N6191

RBI

-

r=-.

1-0

...ZOt

j+V=IIV

O~~"F
1 H P 2141

~-

RESISTIVE SWITCHING

RBSOA AND INDUCTIVE SWITCHING

VCEOtsus)

j

I

to

TURN OFF TIME
Us. tnd .... ct'v. sWitching

6-v

100

~d,ust.d

obtain the forced
hFE deSired

2N5337

dr.ver .s the ,nput to
the r.slSt,ve t.,tcircult.

Adjust R 1 to obtain I B 1
For switching and RBSOA. R2 "" 0

=

For BVCEO(sus). R2

00

1- ..

-w
~~

U ...

!<
U>

LcOII'" 180/olH

LcOII = 80 mH Vee = 10 V
Acon=07n

v clamp" 250 V
RS adjusted to attain deSIred '81

I-

~.

:5

r

rr:

Input

U

S . . Abov. for

Iii
W

lN4937
or'

l ~J

Equhl' ••nt

O.tell" Conditions

I-

Vcl emp

,

-y T

~ 6~sJ
0.1 n

2

'e

I J RC::OII
I ~I
I ~ J L eol'

1

U

l'b?1\
1--,,-

Vee

If

~'.m"d

/'"

r--

IC"""'"

II~

VCE~b.
---- -,

fll-lt

""-"

f----

If, -

r;; 7.0

~

~

l2

1- 1, , -

~

I'\.

~

6.0

I.

Ie = 5.0 A
r- f3f =5.0

5.0

,,/

I
TJ =25°&

L

~ 4.0

IO"'u........... r-.-......

IC pk

90% lSI

-- --\- -- --

FIGURE 8 - PEAK REVERSE CURRENT

'":::>

10% VCE(pkl

-

"'I.

A1\ 90% IC(pk)

/
IS ........

Test EqUIPment
Scope - TektroniX
475 or Equlv.lent

f-',-I

---J '-Ic~ I--VCE

Vee

-0:

Vclemp

Vc,.",P

VCElp')

90% VCElp')
I"

"L

vee

8.0

'\

,--Isv

!'~
~

I, ... LcoI,llCpkl

12 "" LeOl1 UCpk I

T,me

ICr:!.-

.- I

RESISTIVE TEST CIRCUIT
I, Adjusted to
Obteln Ie

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

./

RL = son
Pulse Width'" 30 JlS

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

..

Vee = 250V

ReOl1 '" 0 05 n
Vee'" 20Y

2" ul

e

t

3.O

~20

V
1.0

-- -- -

-

I----

./

/
1.0

TIME

1-686

/

2.0
3.0
4.0
5.0
6.0
VBE(oft). BASE·EMITTER VOLTAGE (VOLTS)

7.0

80

MJ13080, MJ13081

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% lSI to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms

is shown in F'gure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN·222:
PSWT = 1/2 VCCIC(tclf
In general, trv + tfi '" tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsvl which are
guaranteed at 1000 C.

INDUCTIVE SWITCHING

FIGURE 9 - STORAGE TIME

3. 0

V~EIOffl ; 1 0 ~

0

I-"'
..,1. 5

~

i-

V~EIOffl ; 5.0 l

3
1. 0

FIGURE 10 - CROSSOVER AND FAll TIMES
0

-

Ie -1.0 V

O.

..... r-. t--:1.0 v

.1
~

w

to

5::~

'" "....... r-.....

03

'"'" O. 7
J;O 5

1'" . .

2

/3f; 5.0

--Ie
(--- ---If,

TJ - 75°C

O. 3
1.5

3.0
5.0
70
IC, COLLECTOR CURRENT (AMPS I

20

10

12

1
15

15

"

V
Ifi -1.0 V

.-

-~

~

-5.0 V

1;;

....

7-/3f;50
- TJ; 75°C

...1....

r--....

Ie -5.0 V
tf, -5.0 V

-I-

..-

1
3.0
5.0
70
IC, COLLECTOR CURRENT lAMPS)

20

10

12

15

FIGURE 11 - THERMAL RESPONSE
I
~
~_
wO

o. 7 =0'0.5

t- ~

D.

%w

...

~

o. 5

3==

~~ o.2
ZO

~

0.2

!-

0.1

f- r--~

.. z
~: o. 1=:0.05
~~ 0.0 7~0.02

--

-

RtJJC(d :: r(11 ROJC
ROJCh):: 111°C W MilK

o CURVES APPLY FOR POWER

~

PULSE TRA'N SHOWN
READ TIME AI II
TJlpkl - TC' Plpkl ""JCIII

~;o.o5
~'"

tt;~o.o3--~

PfJUl

..-It

0.01

--1

0.0 I
0.01

I II
0.02 0.03

0.05

--I

I-

II
1--12
DUTY CYCLE, 0 '1]/12

0.0H - SINGLE PULSE
0.1

0.2

0.3

10

0.5
I, TIME Im.1

1-687

20

30

SO

100

200 300

500

1000

MJ13080. MJ13081

SAFE OPERATING AREA INFORMATION
Th. Sofe O,..,.tillfl Ar.. fitUra shown in FigurOi 12 and 13 Ira
.-Ifled for t ..... d..i_ u.ndor tha tat condition. shown.

FORWARD BIAS
There are two 'imitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 250 C;TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve
on Figure 14.
TJ(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
l __

12
10
;;; 5.0

~+

~

i5

II:
II:

::>

1-- .---!' .-h.
10!,.~

...

TC = 25·C

1.0

2.0

m. ~

MJ1308~'~

MJ13081,=

de

1.0

~

0.5 ~ --- - BONDING WIRE UMiT
- - THERMAL UMiT
ISINGLE PULSE)
0.2~.
:l
SECOND BREAKDOWN UMIT
c::>
~ 0.1
U
-0.05
II:

~

_\.

0.02
5.0

10

100
20
50
200
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTS)

450

FIGURE 13 - REVERSE BIAS SAFE OPERATING AREA
12
11

Ii

~ 10

\

~ 9.0

\ \

!E B.O TJ';;; lOO·C

i::> 7.0

~ 8.0

~ 5.0
4.0
~ 3.0
~
- 2.0
1.0

:l
c::>

I
I

100

200

-

\

VBElolI) = 0
I' 'I

I
I

---MJ130BO
MJ130Bi- r--

\
\

Ill;' 4.0

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load line
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and represents the
voltage-current conditions during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure
13 gives R BSOA characteristics.

I
I

\. 1\\
r::: .•,l ~
~

~

,tr-.~

VSElolI) = 1.0 to 5.0 V_

,- -j

,.,

,

I

I

400
500
600
700
300
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)

BOO

FIGURE 14 - POWER DERATING
100

~ :--...

'"

...........
..........

........

THERMAt'--.
DERATING

SECo~~:~i~~DOWN _

"-

"'-

I'--

'".....

0

o
o

40

80

120
TC. CASE TEMPERATURE (OC)

'-688

........

I"-....

"
160

'"

~

..........
200

MJl3090
MJ13091
MJH13090
MJH13091

@ MOTOROLA
Designer's Data Sheet

15 AMPERE

NPN SILICON
POWER
TRANSISTORS

SWITCH MODE SERIES
NPN SILICON POWER TRANSISTORS
These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switch-mode applications
such as:

400 AND 4&0 VOLTS
12& and 17& WATTS

J-B --f

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers

:~~:~:~

l~j ~

• Motor Controls

o@J'v

• Deflection Circuits
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads150 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents

...

z..

H

,

FI

+

'

,

STYLE 1
PIN I. WE
t EMITTER
CASE COLLECTOR

G

U

Nons·

I. DIMENSIONS QANO YARE DATUMS.
2.
IS SEATING PlANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE Q:

OJ

MAXIMUM RATINGS
Rating

Symbol

M.J130S0 M.J130S1 M.JH130S0 M./H130S1

Collector-Emitter Voltage

VCEO(sus)

400

450

Collector-Emitter Voltage

VCEV

650

750

Emitter-Base Voltage

6.0

IC
ICM

15
20

IS
ISM

5.0
10

450

Vdc

650

750

Vdc

4. DIMENSIONS AND TOLERANCES PER
ANSI YI4.S. 1973.

Vdo
Adc

Collector Current
- Continuous

-

VES

I t 1~13"'''''@lrlv@1
FOR LEADS.
I t I~'3I."')@T Iv@1 "@I

Unit

400

Peak(l)

CASE 1-0&
TO-204AA
IFormerly TO-3)

Ado

Base Current
- Continous
- Peak(l)

Total Device Dissipation
@TC=25 C
@TC= loo·C

a

T.J,Tstg

,

WaItS

PD

Derate above 25°C
Operating and Storage
Junction Temperature
Range

MJH13090
MJH13091

175
100
1.0

125
50
1.0

W/oC

-65 to 200

-55 to 150

ac

THERMAL CHARACTERISTICS
Symbol

Ma.

Unit

Thermal Resistance,
Junction to Case

RS.JC

1.0

°C/W

Lead Temperature for

TL

275

ac

Chaf.cleri.tic

Soldering Purposes. 1/S"

1
2
3.
4

MILLIMETERS
DIM

MIl

BASE
COLLECTOR
EMInER
COLLECTOR

INCffES

M,.

... ....

MAX

•• 20.' ,'ID'
,
...U. ..
•, U, 10'
.....
•• , am
....
.....
•,• ,
• .... '.22 uao
"

MAX

DJIIO 0.830

11.48
10%.

..

5.21

Oe.igner'. 08t8 for "Worst ease" Condition.
The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Limit curves - representing boundaries on device characteristicsare give~ to facilitate "worst case" design.

1-689

...

DJI

12.70

12.19

0.810
~,

0..0

5.72

31•

1.200
0.0&5

•.00,

. ....
1.225
0.121

OJ< 0.015
16049
16.51 0.825
12.70

as..

0.18

UII

D."

0.810

CASE 340-01
TO-218AC

MJ13090,MJ13091,MJH13090,MJH13091

ELECTRICAL CHARACTERISTICS (TC = 25·C unless otherwise noted)
Symbol

Characteristic

Min

Typ

Max

400

-

450

-

-

-

Unit

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1 )
MJ13090. MJH13090
(IC 100 mAo IB 0)
MJ13091. MJH13091

=

VCEO(sus)

=

Collector Cutoff Current
(VCEV Rated Value. VBE(off)
(VCEV Rated Value. VBE(off)

=
=

Collector Cutoff Current
(VCE Rated VCEV. RBE

=

ICEV

=1.5 Vdc)
=1.5 Vdc. TC =lOO·C)

=50 n. TC =lOO·C)

Emitter Cutoff Current

(VEB

=6.0 Vdc. IC =0)

Vdc

-

mAdc

-

0.5
2.5

ICER

-

-

3.0

mAdc

lEBO

-

-

1.0

mAdc

SECOND BREAKDOWN
See Figures 12 and 13

Second Breakdown Collector Current with Base Forward Biased

See Figure 14

Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
DC Current Gain

(lc

8.0

-

-

-

-

1.0
3.0
2.0

-

-

1.5
1.5

td
tr
Is
If

-

0.03
0.13
0.55
0.10

0.05
0.60
2.50
0.50

ILS

tsv

-

0.80
0.175
0.15
0.50

3.00
0.40
0.30

ILS

hFE

=10 Adc. VCE =3.0 Vdc

Collector-Emitter Saturation Voltage
(IC 10 Adc. IB 2.0 Adc)
(IC 15 Adc. IB 3.0 Adc)
(IC 10 Ade. IB 2.0 Ade. TC 100·C)

VeE(sat)

Base·Emitter Saturation Voltage

VBE(sat)

=
=
=

(lC
(lc

=
=
=

=

=10 Ade. IS =2.0 Ade)
=10 Ade. IS =2.0 Ade. TC =lOO

O

C)

Vdc

Vde

DYNAMIC CHARACTERISTICS
OulPUI Capacitance
(VCS 10 Vdc. IE O. ftest

=

=

=1.0 kHz)

SWITCHING CHARACTERISTICS
Rbiative Load (Table 1)
Delay Time
Rise Time
Storage Time

Fall Time

=
=

(VCC = 250 We. IC 10 Ade.
ISl 1.25 Ade. Ip 30 ILS.
Duty Cycle <;;;2%. VBE(off) = 5.0 Vde)

=

Inductive Load. Clamped (Table 1)
Storage Time

Crossover Time
Fall Time
Storage Time

Crossover Time
Fall Time

=

(lC(pk) lOA.
ISl 1.25 Ade.
VSE(off) 5.0 Vdc.
VCE(pk) 250 V)

=

=
=

(TJ

=lOO·C)

(TJ

=25·C)

11) Pulse Test: PW = 300 pS. Duty Cycle .. 2% .

•~,=!£.
IS

1-690

Ie
Ifi
Isv
Ie
tfi

-

0.15

-

0.10

-

MJ13090,MJ13091,MJH13090,MJH13091

III

DC CHARACTERISTICS

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
50

IIII
100°C

30
z
:;;:

r-.

~

::0

IC;5.0A

ffi 1.0

~

VCE ; 5.0 V

'"''"'co...

10

1,\

.5 A

~O 7
~

0.5

"-

~ 0.3

~ 0.2

7.0

~o. 1

5.0
0.5 0.7 1 0
2.0 3.0
5.0 7.0
IC. COLLECTOR CURRENT (AMPS)

10

2.0

3.0

5.0

FIGURE 4 - BASE-EMITTER SATURATION VOLTAGE
3.0

5.0

i

3.0

co 2.0

..

.....
t'- I--

0.2 0.3
0.5 0.7 1.0
IS BASE CURRENT (AMPS)

0.05 0.07 0.1

20

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

0;~

~5A f-+-

1\

co

.It

0.2 0.3

\

10 A

~ 2.0

i'

TJ; 25°C

1"\

3.0

20

'"

TJ; 25°C

=
'"
c

~i'

i

10
7.0
50

~

I

2.0

,6t; 5.0

~

'"~

1.0

TJ ~ 25~C

co 0.7
".

,61; 5.0

I---

ffi 0.5

~

:; 0.3

g

,- ~

-- 01

~O.07

$'0.05
0.2 0.3

-

...

TJ; 100°C

~ 0.2

./
",

TJ ; 25°C

0.5 0.7 1.0
2.0 3.0
5.0 7.0
Ie. COLLECTOR CURRENT (AMPS)

10

0.3
0.2

20

0.3

j

f-

I

/

5 1=~TJ'I50DC
~

100DC

to 1

I

./
/

75DC

Db

TJ; 25°C

0

8

~

I- Cib

0

125DC

'"c

20

FIGURE 6 - CAPACITANCE

t== VCE' 250 V

102

10

10K

103

a'"

.-1"
TJ; 100

0.5 0.7 1.0
2.0 3.0
5.0 7.0
Ie. COllECTOR CURRENT (AMPS)

FIGURE 5 - COLLECTOR CUTOFF REGION
104

~~

100

~

pREVERSE

~ ~_25DC
10- 1
-0.4

-0.2

FORWARD

10
+0.2

+0.4

+D.6

1.0

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-691

10
100
VfI. REVERSE VOLTAGE (VOLTS)

1000

MJ13090,MJ13091,MJH13090,MJH13091

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

100

"

1 J.....

20

~-:5lf

""0V>~O'

2•

.

'"z

• -IL

~

2NS191

10,uF

TURN ON TIME

Ra1

tjA

_C\

t

--,2

ZO
-Z
0
U

Y'V ~11 V

002.F
/ H P 214/
or :~UI\I

1-0
::1~

RESISTIVE SWITCHING

RBSOA AND INDUCTIVE SWITCHING

VCEO(susl

pr l
.

'8~:
'S1 .dJusted to

10,uF

50

P1N Verted to Atte,n
le·,OOmA

-

V

obtein the forced

2N5337

"FE deSIred

:J

500

6-v

100

':"

TURN OFF TIME

Us- Induet'",e switch,",
driver 8S the Input to

me 'eslSt,,,,. test CirCUit

Connect Point A to base of TUT
Adjust -V to obtain desired VSE(off) at Point A

Adjust R1 to obtain IS1
For switching and RBSOA. R2
For BVCEO(sus) R2 00

z:

0

=

1-",

-w
::1::1
U ...

!c

Leon" 80 mH

Vee

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

I-

U

a:
U
Ii;

~.

Input

s.. Abo". for

I-

2

I
1N4937
or

'EQulv.'.nt

D.t.iI.d CondItion.

W

r

,

.

Vcl emp " 250 V
AS,edJusted to eltl,n deSIred 'a1

Rcoll ': 005 U
VCC""2DV

U>

'"'3

~

V I
e.."p

~

t

'e !b1\:

1
.
I Reoil

"~.

I

I

I Leo,'

l j

Vee VCEI veE.O·-O
_____ t

J

b,Rs:,b
0.1 n

ie,!--

..... f-"'" I
./

'"

-

1

9D!1o VCE(PkI :\9D!IoICllIkl

'IV+H~'fi- -'..
---, '-'C~ I:/
~

I- f--' ..

VeE

10% VCE(pkl

1 8 - I-- 90% 181

""'"

10"1"

ICPk

-- --\-, -- --

-- -- -

-

Vee

-

-;t

24.~
-: ~ Vee
"L

t2 "" Leol,I'Cpk'
Vcl• mp

Vcl• mp

VeE(pkl

to

t, "" LCOllilCpk'

1--.,- t.t-

T,m,

AdJult~

Obte,n Ie

m ...

I

Pulse Width::: 30 p.

RESISTIVE TEST CIRCUIT
tt

T.st EQulpm.nt
Seop. -'T.ktron"c
475 or EqUlv••• nt

1-'2-l

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

le/

VCc"2S0V
RL" 250

l.eoll" t80"H

= 10 V

R coll =070

FIGURE 8 - PEAK REVERSE CURRENT

10
9.0
;;; 8.0 _le=10A_ f- Tj=
{Jf= 5.0
~.
~ 7.0

Ii
i 8.0
13 5.0

i

ffi ~.O

L

,/

/'

./
L

4.0

:&3.0

~5oe

./""

,/

1.0

~

1.0

TIME

1-692

2.0
3.0
4.0
5.0
8.0
VSE(ollJ. BASE·EMmERVOlTAGE (VOLTS)

7.0

8.0

MJ13090,MJ13091,MJH13090,MJH13091

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMOOE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Yoltage Storage Time, 90% ISl to 10 % Ycl amp
trv = Yoltage Rise Time, 10-90% Yclamp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
te = Crossover Time, 10% Yclamp to 10% IC
An enlarged portion ofthe inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.

For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and can
be obtained using the standard equation from AN-222:
PSWT = 1/2 Ycclcftclf
In general, trY + tfi "" te. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency convener circuits, the user-oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds ftc and tsv) which are
guaranteed at 100°C.

INDUCTIVE SWITCHING
FIGURE 9 - STORAGE TIME

5.0

FIGURE 10- CROSSOVER AND FALL TIMES

1.0

_/112 5.0
TJ = 75°C

..;

~/If=5.0

r-- TJ =75°C

0.7

VBElo"l = 1.0 ..........

3.0
VSE(o"l ='1.0 V

12.0 ~

1.0V

I,.

0.5
..; 0.3

~

VSE(offl = 5.0 V

t---

oJ

Isv

5.0 V

I

I

-'"
-f=::.;: .... -

0.2

1' ......

.......

-Ie
2.0

3.0

5.0
7.0
10
Ie COllECTOR CURRENT (AMPSI

15

20

3.0

2.0

""I-"

Ie.

V

,,'

,..-

~,r,

IBE(Or 1.0

--Iii
0.1

/

" ~~. f\1

I'.. ...

0.7
0.5

~

..-.;;..

1--

~

~

t:! ~~ V15

5.0
7.0
10
COUECTOR CURRENT (AMPSI

20

FIGURE 11 - THERMAL RESPONSE

s

~
c

I. 0

o. 7

I o.5
C>
~ o.3
~
~

~

!

i!

0.2

D.2

!ii
~

O' 0.5

~~

-

0.05
0.03

t-

0.02

-r~~

!!".

~~
0.02 I-

fo""
.. 0.0 1 .......
..
0.01
0.02

Plpk)

tJUl

0.07 r-- 0.05

I~

~

0.1

o. 1

I

DUTY CYCLE. D • 11/12

Sl7G~E r~~~!
0.05

0.1

11111
0.2

O.S

1.0

20

S.O
I, TIME {msl

1-693

10

I

I
20

iItIJc(11 = ~II iItIJC
R6JC = 1.0 o C/W Max
DC""," Apply Fot Power
Pul.e Train Shown
Raad Time@ll
TJ(pkl- TC = P(pkl iItIJcll1

I I 111111
100

I

I
200

I

I I III
SOD

1.0k

MJ13090, MJ13091,MJH13090, MJH13091

III

SAFE OPERATING AREA INFORMATION

The Set. Operating Ar.. figures shown in Figures 12 and 13 are
lIMCified for these devices under the test conditions shown.

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than t~ curves indicate.
The data of Figures 12 and 13 are based on TC = 25°C;
TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must
be derated when TC;;' 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 12 and 13
may be found at any case temperature by using the appropriate curve on Figure 15.
TJ(pk) may be calculated from the data in Figure 11. At
high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 12- FORWARO BIAS SAFE OPERATING AREA
MJ1 3090 and MJ13091

.

2D
15
ID

~ 5.0
~

~ 2.0

lD

1.D m.
MJ13D90
MJ13D91

~

TC; 25°C

p~'"

~ 1.0
'" D.5

ti
~

-

0.2

8

9 D.1 ~
D.D5

Bonding Wire Limit
-- - Thermal limit
Second Breakdown Limit

......

D.D2
5.D

lD

2D
5D
lDD
2DD
VCE. CDLLECTDR·EMITTER VDLTAGE (VDLTSI

450

REVERSE BIAS
FIGURE 13- FORWARD BIAS SAFE OPERATING AREA
MJH13090 and MJH1 3091
2D
l'I,LDm.- lD

10

in

!E 5.D

For inductive loads. high voltage and high current
must be sustained simultaneously during turn-off. in most
cases, with the base to emitter junction reverse-biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse
Bias Safe Operating Area and represents the voltagecurrent conditions during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure
14 gives RBSOA characteristics.

~."'I-

MJH13D9D
MJH13091

~

~ 2.D

TC; 25°C- ~ <-dc

~

., 1.0

"-

!5 D.5

!ilg 0.2
~o. 1~

- - - - - -

Bonding Wire Limit
Thermal limit
Second Breakdown Limit

D.O 5
0.02
5.0

10

100
20
50
200
VCE. COLLECTOR·EMmER VOLTAGE (VOLTSI

500

FIGURE 14 - REVERSE BIAS SAFE OPERATING AREA
24

I
I

22

in 2D

- MJ13090. MJH13D90
MJ13091. MJH13091 -

"::IE 18
~

t-

is

'"
GC

16
14

~ 12

~

10
~ 8.0

B

8.0

~4.0

_ TJ<;;1000C
/11;;' •. 0

I

-

2.0

I

100

1\
\ .\

,,

200

!E

~ ;::,....
~~

GC

~'"

60

~

40

~

'\. i'....

'\\('"

"

i -

I

~"-

I-r-

20

I

300
400
500
BOD
700
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

o

o

800

1-694

r-......

MJ13090 and MJ13D91
MJH13090 and MJH13D91

i'-

r-.... r-.......

~

GC

VB~(olfi 1= 1.01to 5 OV

~econd 'Sreakd!wn Da!ating

r--.....
"""-"':: .......

80

z

V~(offi= 0 I'... .\I\\~ / '
I

FIGURE 15 - POWER DERATING
100

I I I
I I I

'\
Thermal Denrting
MJH13090 and MJHI3D91MJi3090 j"d MJ 13091I
I

~

-'\.

i'--..

......
i'>

"

........,

'\

4D

80
120
TC, CASE TEMPERATURE (OCI

............

160

"""

200

®

MJ13100
MJ13101
MOTOROLA

III

Designer's Data Sheet
20 AMPERE

SWITCH MODE II SERIES
NPN SILICON POWER TRANSISTORS

NPN SILICON
POWER TRANSISTORS

The MJ13100 and MJ13101 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. Theyare particularly suited for line-operated switchmode applications such as:

400 AND 450 VOLTS
175 WATTS

•

Switching Regulators
Designer's Data for

• Inverters

"Worst Case" Conditions

•

Solenoid and Relay Drivers

•

Motor Controls

•

Deflection Circuits

The Designer's Data Sheet permits
the design of most circuits entirely from
the information presented. Limit data
- representing device characteristics
boundaries - are given to facilitate
"worst case" deSign.

Fast Turn-Off Times
30 ns Inductive Fall Time @ 25°C (Typ)
50 ns Inductive Crossover Time @ 25°C (Typ)
900 ns Inductive Storage Time @ 25°C (Typ)
Operating Temperature Range -65 to +200°C
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Rating

Symbol

MJ13100 MJ13101

Collector-Emitter Voltage

VCEO(sus)

400

Collector-Emitter Voltage

VCEV

650

Vdc

750

Vdc

F ----

Emitter Base Voltage

VES

60

Vdc

Collector Current -

IC
ICM

20
30

Adc

IS
'BM

10
15

Adc

Po

175
100
1.0

W/oC

-65 to +200

°C

Base Current -

JFA°=:Lf_=r

t.~K
m/t~___ ~

Unit

450

Continuous
Peak(l)

Continuous
Peak (1)

Total Power Dissipation @ Te =; 25°C
@TC=100oC
Derate above 25°C

Watts

Hons
1 DtMENSIONSOANOVAAEDATUMS
2 [fJISSEATiHGPLANEANODATUM

3 PDSITIONALTOlERANCE FDR
MOUNTING HDLE Q

Operating and Storage Junction
Temperature Range

TJ, Tstg

1+lt131001l51@ITlv@[
FQRLEAOS

STYLE 1
PIN 1 BASE
2. EMlnER
CASE COLLECTOR

1+le131DIlO§I@)TjvejQ@!

THERMAL CHARACTERISTICS
Characteristic

Thermal ReSistance, Junction to Case
MaXimum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width

=

.DIMENSloNSANOTOtEAAMCES'EA
ANSIV14S.1913

Symbol

Max

Unit

ROJC

1.0

°C/W

TL

275

°c

5 ms, Duty Cycle ,,;; 10%.

CASE 1-05 TO-3 TYPE

1-695

MJ13100, MJ13101

I

ELECTRICAL CHARACTERISTICS (TC' 25°C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

400
450

-

-

-

-

0.5
2.5

Unit

OFF CHARACTERISTICS (1)
Coilector-Emitter Sustaining Voltage (Table 1)
(lc ' 100 mA. IS ' 0)

Vdc

VCEO(sus)
MJ13100
MJ13101

Coilector Cutoff Current
(VCEV' Rated Value. VSE(off)' 1.5 Vdc)
(VCEV' Rated Value. VSE(off)' 1.5 Vdc. TC' 100°C)

'CEV

Collector Cutoff Current

ICER

-

-

3.0

mAde

'EBO

-

-

1.0

mAdc

-

mAdc

(VCE' Rated VCEV. RSE' 50 n. TC' 100°C)
Emitter Cutoff Current

(VES ' 6.0 Vdc. IC ' 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See figure 12

'Slb
RSSOA

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS (1)
DC Current Gain

hFE

S.O

-

40

-

-

-

-

1.0
3.0
2.0

-

-

1.5
1.5

(IC' 15 Adc. VCE' 3.0 Vdc
Coil ector-Emitter Saturation Voltage
(IC' 15 Adc. 'B ' 3.0 Adc)
(IC ' 20 Adc. IS ' 4.0 Adc)
(IC ' 15 Adc. IS ' 3.0 Adc. TC ' 100°C)

VCE(sat)

Base-Emitter Saturation Voltage

VBE(sat)

(lc' 15 Adc.

IS ' 3.0 Adc)
(IC ' 15 Adc. IS ' 3.0 Adc. TC ' 100°C)

Vdc

Vdc

DYNAMIC CHARACTERISTICS
Output Capacitance

(VCB' 10 Vdc. 'E' O. ftest ' 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Loed (Table 1 )
Delay Time
Rise Time
Storage Time

Fail Time

td
tr
ts
tf

VCC' 250 Vdc. 'C' 15 Adc.
IS1 ' 2.0 Adc. t p ' 30 1'5.
Duty Cycle <;;2%. VSE(off)' 5.0 Vdc)

-

0.02
0.13
0.90
0.10

0.05
0.50
3.5
0.50

I'S

-

1.25
0.15
0.13
0.90
0.05
0.03

4.0
0.50
0.40

1'"

InductIve Load. Clamped (Table 1)
Storage Time
Crossover Time

Fall Time
Storage Time

Crossover Ti me
Fall Time

(lC(pk) , 15 A.
IS1 ' 2.0 Adc.
VSE(off) , 5.0 Vde.
VCE(pk) , 250 V)

(TJ,1000C)

(TJ,25°C)

(1) Pulse Test: PW - 300 ~s, Dutv Cvcle ~2%

.~f' Ie

'B

1-696

tsv
tc
tfi
tsv
te
tfi

-

-

MJ13100. MJ13101

DC CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

0

ioooc- I--..

TJ =

0

1

0

~

0

~

I I

0
40
03

05

I

10

50

~

'I

........

10

IC - 5.0 A

TJ = 25°

..u

20

$'0 1

0.1

30

0.2

0.3

0

~
w

0

0

~

10

lif -

V/

50

TJ

~

f-.--

01 0

=100°C

,-V

00 5

030 0500.70 1

>-

ia

2.0

TJ

0

0

=25°C
5.0 70

10-

~

:;..-

~

I

0
0.3 030

2nO

0.5 0.7

30

50 7.0

10

20

30

10K

I

5K
~

~

moc
1000C

10 1

20

FIGURE 6 - CAPACITANCE

f= f= TJ· lSOoC

101

I

10

20K

I

'"

~

IC. COLLECTOR CURRENT (AMPS)

f:= VCE" 250 V

o

~

10

~
J = 100°C

FIGURE 5 - COLLECTOR CUTOFF REGION

103

J0

-

0

~

IC. COLLECTOR CURRENT (AMPS)

j

5.0 7.0

TJ - 25°

~ 03 0
t; 02 0

104

.0

I

0

~ 05 0

:>

2.0

I
lif =

'"

8
tl

10

FIGURE 4 - BASE-EMITTER VOLTAGE

5. 0

«
'"

0.5 0.7

I--..

lB. BASE CURRENT (AMPS)

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

:>

--

o. 2

8

IC. COLLECTOR CURRENT (AMPS)

~

\

-

15 A

10 A

~ o. 3

...........

2.0

20A

ffi 0 5

!::
a':
~

r--.....

-55°C

1\

c(

'~~
"

I
VCE = 5.0 1V

\

'":>~1. 0
'"
!:; 0 7

"

\

\

!:;

25°C

0

.

-

0
0;-

z

L

./

==

Cib

lK

5500

~

750 C

8

2K

r--

~ 200 r- Cob

;

100
0 ...... :=;REVERSE

===

10- 1
-04

FORWARD

50
20

::::--150 C
-01

+0.2

+0.4

+0.6

FTJ

10 10-

"J.,
2.0

25°C

50

10

20

50

100

VR. REVERSE VOLTAGE (VOLTS)

VBE. BASf.EMITTER VOLTAGE IVOLTS)

1-697

200

500

1000

MJ13100, MJ13101

TABLE I - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEO(susl

002 "F

I

"

H P 2141
or :~UIV

100

I

~

J2N6191

."

z

10 pF

.:s1f

A

20
0.Jl...

ZO
-Z

:jA

1

~2

ed:

TURN ON TIME

RSI

ro-..

.... 0

::J-

y+V '" 11 V

"-

20
+10 V

RESISTIVE SWITCHING

fr

l.@rA
IS1 adjusted to

1 0 J.'F

50

0

U

500

PW Varied to Attain

Ie'" lOOmA
.".

obtai" the forced

I

_~2N5337
100

"FE deSIred

TURN OFF TIME
Use ,nduct'''1! sWItching
d."",. as the ,nput to
the resIst.". lest CircUit

b-v

Adjust R1 to obtam IS1
For sWitching and RBSO A . R2 -= 0

For BVCEO(sus), R2 ""

....-w."

::J::J

Lco'I" 80 mH Vee'" 10 V

!<
U>

Rco,I" 0 7 J'l.

U ....

0<>

le011 ~ 180 ~H

Rcol ' "" 0 05
VCC=2DV

INDUCTIVE TEST CIRCUIT

VCC=250V

n

VClamp '" 250 V
RS adJusted 10 attain deSired '81

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

t,
."

....
:;

~,

U
II:

A

r~ iRcOi"

U

See Above for

Iii

EqUIvalent

OeUII'ed CondItIons

....
'"

2

FIGURE 7 -

or

V clamp

-.:1.

I Leol'

1- Vee

L j

,.,

FIGURE 8 -

V
10% VCE(pkJ
90%181

- - --

-

f..--

'-'"

PEAK REVERSE CURRENT

VV

r---

i

VCE

--\- --

Test EqUIPment
Scope - Tektronuc
415 or EQUIvalent

l--!2-j

",,/"

0

IIV +1~lel_~I!I-

I- r--Isv

1---. -Ic~

-

Vcl amp

___ -1....,

90% VCE(pkJ 1\90%IC(pkl

./

-

Lcoll (l eM )

0
VCE(pkJ

-

"-

10% .......

IC pk

-- -

~ ~vee

2l

' 2 "Velamp
---

lI:t}'
T,me

~

I

Leo.IOeM)

--r

VCEM

'r-1TI
'c

I, . . -----vee

r--

INDUCTIVE SWITCHING MEASUREMENTS

./'

18-

VeE

-4= b."sJ
0.1 n

IC P: " - ' -

IC/'"

'I ~Iamped

1--,,- 'I

Adjusted to

Obtain Ie

leM __
leL0=

I

I
I

lN4937

Input

RL = 166n
PulseW,dth=30/loS

/'
.0

-2%IC

.0

,,,,,.v
V

V-

1-698

/
IC = 15 A

/3f = 5.0
TJ = 25°C

10

TIME

,/

2.0
3.0
4.0
5.0
VBE(off). BASE·EMITTER VOLTAGE (VOLTSI

6.0

MJ13100, MJ13101

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv ~ Voltage Storage Time, 90% lSI to 10% Vcl amp
trv ~ Voltage Rise Time, 10-90% Vcl amp
tfi ~ Current Fall Time, 90-10% IC
tti ~ Current Tall, 10-2% IC
tc ~ Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the inductive switching waveforms

is shown in Figure 7 to aid

In

the vISual Identity of these

terms.
For the deSigner, there IS minimal sWitching loss
during storage time and the predominant sWitching

power losses occur dUring the crossover mterval and
can be obtained uSing the standard equation from AN·222:
PSWT ~ 1/2 VCClcltclf

In general, try + tfl : : : .: te' However, at lower test currents
this relationship may not be valid.
As IS common with most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark for designers. However, for deSigners of high

frequency converter circuits, the user oriented specifications which make this a "SWITCH MODE" transistor are
the inductive sWitching speeds Ite and tsvl which are
guaranteed at 1 aaoc.

INDUCTIVE SWITCHING

FIGURE 9 -

.0
4. 0

STORAGE TIME

-- -

JIl 5.0

VBElofil - 1.0 V

TJ - 75°C

.0

FIGURE 10 -

.5

_f-

-v;;.lfl

---........

5.0 V

..... ----

1 TJ

3.0

5.0

7.0

10

15

20

= 75'oC

00 7
0.0 6
30

30

5.0

~
~

,/

\\, /
'-- - ;

70
10
IC. COLLECTOR CURRENT lAMPS I

1

"

20

30

o. 7 o ~ D's
o. 5
02

rot

0.0 7 - 005

~

005

;: 003

-

I-

002 -'"

z

~

)X '';/
..... _"'\

-

FIGURE 11 - THERMAL RESPONSE

~

ffi

/'

0

~ o. 3
:i D. 2
:;;
~ o. t

in

=1.0 V/

'\ Y

te
t\'

IC' COLLECTOR CURRENT IAMPSI

g

VBElofl)

III =50

O. 7
O. 5

I'-

3""'1', , ""r-2

~

~

=5 0 V
~- -

VBEloffl

"-

-........

tsv

CROSSOVER AND FALL TIMES

,...--

6
5

00 1 ......

OOt

......,

0.02

Plpk)

~

~

01

o Curves Apply For Power
Pulse Tram Shown
Read Time At q

-r~~

[

TJlpkl - TC = Plpkl ROJCltl

DUTY CYCLE, D ~ "/r2

Slr~ErW~1
005

ROJcltl =rltl ROJC
ROJC =1 O°C/W Max

tJlSL

...,.

002

~

l- I-'
"-:;:;;;-

IIIII
02

05

10

20

50

t TIME (ms)

1-699

to

I I
20

1'1 I IIIII
50

100

I

I
200

I

I I III
500

1.0 k

MJ13100, MJ131 01

SAFE OPERATING AREA INFORMATION
The Safe Operating Area figures shown in figure 12 and 13 are
specified for these devices under the test conditions shown

--

FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA
30
10l's ~
20

~

-"

in

~

~

....

ill

a:

'"

'"'a:
0

~

0

'"'Ji'•

10
7.0
5.0
3.0
2.

JI31

10ms
TC = 5°C

1.0
0.7
0.5
0.3
0.2

-

)O~

......

Second Breakdown Umit

0.05
0.03
10

20 30
50 70 100
200 300
VCE. COLLECTOR·EMITTER VOLTAGE {VOLTS)

450

u;

FIGURE 13 - REVERSE BIAS SAFE OPERATING AREA
30
28
1- MJ13101, _
MJI3100
24

....~

20

illa:
'"
a:

'"'
0

G

~

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve on
Figure 14
TJ(pk) may be calculated from the data," Figure " .
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

de

BondIng Wire Umit
Thermallimil {Single Pulse)

0.1

5.( 7.0

...::e

FORWARD BIAS

,

~

--

I

\
l~

16

,

8.0f- TJ';; 100°C
f-1l1';;'j

J
I

4.
100

200

For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable dUring reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the RBSOA characteristics.

1 1

I\. 1\
\

12

~

t/

REVERSE BIAS

VBE{off) = 0 V

t7 VBE{off) = 1.0 V10 5.0 V

t--

I
'~
\ 1\ t-~

I T

\

500
600
700
300
400
VCE. COLLECTOR·EMITTER VOLTAGE {VOLTS)

800

FIGURE 14 - POWER DERATING
100

~
o

0

...z~

60

~ ::-......

"" ""

t;

THERMAL
DERATING

;::

~
o
'"

J
_

r---..

40

..............

"" "-

SECOND BREAKDOWN
OERATlNG-

..............

r---..

'"

............
......

20

o

o

40

BO

120

TC, CASE TEMPERATURE lOCI

1-700

"
160

........

""

200

®

MJ13330
MJ13331

MOTOROLA

Designers Data Sheet
20 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

200 and 250 VOLTS

The MJ 13330 and MJ 13331 transistors are designed for h ighvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated
switchmode applications such as:
•

Switching Regulators

•
•

Inverters
Solenoid and Relay Drivers

•
•

Motor Controls
Deflection Circuits

175 WATTS

Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits
entirely from the information pre·
sented. limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.

Fast Turn-Off Time
75 ns Inductive Fall Time-25 0 C (Typ)
150 ns Inductive Crossover Time-250 C (Typ)
900 ns Inductive Storage Time-25 0 C (Typ)
Operating Temperature Range -65 to +200 0 C

~
1~1+H'-+

lOOoC Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

t.

D

..

K

j

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Sase Voltage
Collector Current - Continuous

- Peak

(1)

Base Current - Continuous

-Peak (1)

= 2SoC
@TC= 1000C

Total Power Dissipation @TC

MJ13330
200
400

Symbol
VCEOlsus)
VCEV
VEB
IC
ICM
IB
laM
Po

Derate above 25°C
Operating and Storage Junction
Temperature Range

I

I
I

MJl3331
250
450

6

20
30
10
20
175
100
1
-65 to +200

TJ.Tstg

Unit

Vdc
Vdc
Vdc
Adc

NOTES
1. DIMENSIONS 0. AND V ARE DATUMS
2 (JJ I~SEATING PLANE AND DATUM
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLE 0.

Adc

I • 11.1310.00510 Ii]V"®J
I • I1.13 10 00510 T Iv01 001

Watts

FOR LEADS

W/oC
°c

4. DIMENSIONS AND TOLERANCES PER
ANSI Y14.5, 1973.

MILLIMETERS
DIM MIN MAX
A
3931

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds

Symbol
R8JC
TL

MIx
1
275

Unit

°C/W
°c

B
STYlE 1

f>INl
:2

EMITTER

CASE COLLECTOR

6.35

D
E

0.97

un

F

30.158SC

G

762
1 D9
1.7

lO.928St

H

546BSC

J
K

IS.S9BSC
1118 12.19
381
4.19
26.67
4.83
5.33

n

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle .. 10%.

21.D8

C

R
U

v

3.81

4.19
CASE 1.415

Similar device types with higher VCEO ratings are: MJ13332 (350 V) thru MJ13335 1500 V).

1-701

MJ13330, MJ13331

111

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted).

-I

Characteristic

Symbol

Min

Typ

Max

200
250

-

-

-

-

-

0.25
5

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 11

(lC

= 100 mAo

IB

MJ13330
MJ13331

Collector Cutoff Current

(VCEV
(VCEV

= Rated
= Rated

= Rated

= 150°C)

VCEV, RBE

=6

Vde, IC

ICER

5

mAde

lEBO

0.5

mAde

= 50 n, TC = 100°C)

Emitter Cutoff Current

IVEB

mAde

ICEV

Value, VBE(ofl) = 1.5 Vde)
Value, VBElof!) = 1.5 Vde, TC

Collector Cutoff Current

IVCE

Vde

VCEO(sus)

= 0)

= 0)

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 12

Clamped Inductive SOA with base reverse biased

See Figure 13

ON CHARACTERISTICS 11)

DC Current Gam
(Ie

(lC

Collector-Emitter Saturation Voltage

(lC = 10 Ade, IB = 1.5 Adc)
(lC = 20 Ade, IB = 5 Ade)
(lC = 10 Ade, IB = 1.8 Ade, TC

VCElsat)

= 10 Ade,
= 10 Ade,

18
IB

15
8.0

-

75
40

-

-

1.5
3.5
2.5

Vde

-

-

-

-

-

-

1.8
1.8

fT

5

-

40

MHz

Cob

100

400

pF

td

-

0.08

0.20

tr

-

0.55

1.0

ts

-

0.70

3.5

'"
'"

tf

-

0.11

0.7

~s

tsv

-

1.35

4.5

~s

0.45

1.8

~s

= 100°C)

Base-Emitter Saturation Voltage

IIc
IIc

-

hFE

= 5 Ade, VCE = 5 Vde)
= 10 Ade, VCE = 5 Vde)

Vde

V8Elsat)

= 1.5 Ade)
= 1.8 Ade, Tc = 100°C)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product

IIc

= 300 mAde, VCE = 10'Vde, f test = 1 MHz)

Output Capacitance

(VCB

= 10 Vde,

IE

= 0, f test = 100 kHz)

SWITCHING CHARACTERSITICS
ReSistive Load (Table 1)
Delay Time

Rise Time

Storage Time

= 175 Vde, IC = 10 A, 181 = 1.5 Ade,
VBElofl) = 5 Vde, tp = 50 ~s, Duty Cycle <;
IVCC

2%)

Fall Time

~s

Inductive Load, Clamped !Table 1)

Storage Time
Crossover Time
Storage Time
Crossover Time

= 10 A(pk), Vel amp - 200 Vde,
= 5 Vde, TC = 100°C)
IIC = 10 Alpk), Vclamp = 200 Vde,
V8Eloff) = 5 Vde, TC = 25°C)
IIC

181 -1.8 Ade,

VBEloff)

te
181

= 1.5 Ade,

Fall Time

11) Pulse Test· PW

= 300 ~s,

Duty Cycle <; 2%.

1-702

0.90

tsv

~s

te

-

0.15

-

~s

tf,

-

0.075

-

~s

MJ13330, MJ13331

DC CHARACTERISTICS

TJ'1500e

en
:;

-

0
Tr 150e
0

VeE' 5 V

le'5A

~

IC" 10 A Ie' 15 A Ie" 20 A

1.8

«

:;

II

o

~

~

0

~

1.4

i=
~
c:r:

10

;

\
\

\

06

0.5

1.0

~

2.4

5.0

20

10

0.2

05 0.7

0.3

~;1.2

"j>

/

0.8

-

o
0.2

2

w
....

~ 0.8

:i

~

-I

1 1

o

20

05

0.2

~
....

a~

I

I

/

f= =TJ'1500e
lODDe

10 1

~

~

I
/

"

U
~ 200

I

./

'"oj

/

10-1
-04

F'REVERSE

-0.2

.......

;3

....
ir
....

75°C

~
t
- - t::= 25°C

"-

z

/

o

100

20

"-

u

'-'

~

400

w

125°C

~

~

I

/

10 3

o

10

BOO

f== VeE -150 V

102

5.0
1.0
2.0
Ic, CO LLEeTO R cu RRENT lAMP)

FIGURE 6 - OUTPUT CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION

10 4

>- V

04 b}:;toe

>

I
10

-

?'

f..-p

I--TJ" 25°C

~

/

w-

VBElsa')@ IcIIB" 5

~

TJ' 25°C

5.0
1.0
2.0
Ie, COLLECTOR CURRENT lAMP)

0.5

16

w

/

/

'-'0

>

2.

"'«
~>

I

B 0.4

20

~

f

II

le ll B·5

"'U;l~

10

FIGURE 4 - BASE-EMITTER VOL TAGE

T~ I, 150 0le

~ ..... 2.0

!::> 1.6

5.0

3.0

2.0

II
II

~~
.... 0

2.0

1.0

IB' BASE CURRENT lAMP)

....
'"

S

1"0..

> 0.2

10

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOL TAGE

o

1\
\

~

Ie, COLLECTOR CURRENT lAMP)

28

1\
\

1\

o

5. 0

z

Tf

il

TJ' 25°C

o

0

0.1

2.2

?

,~

0

II.

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN

100

'"

l\

100

FORWARD
Cob
+0.2

+0.4

60
0.4

-1-0.6

1.0

2.0

5.0

10

20

50

VR, REVERSE VOLTAGE IVOLTS)

VBE, BASHMITTER VOLTAGE IVOLTS)

1-703

100

1=:=1:=200

400

MJ13330, MJ13331

SWITCHING TIMES NOTE
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
le!:.!5--

.....- V I

90%V clamp

./

"'I.

A 90%le

'",fl~'foI---. '-'c~ l-

f-- f--'sv

le/

Vclamp_

\

V
VeE

le pK -

I B - I-- 90% IBI

-- --\- -- ---\

1-12% Ie

-

-

I--

~

t--

_,,,_

1"10% ......

10%V clamp

In reslst,ve switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase, Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% ISl to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT= 1/2 VCCIC(tc)f
In general, trv + tfi = tc' However, at lower test currents
this relationship may not be valid .
As is common with most switching transistors, resistive
switching is specified at. 250 C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and tsv) which are
guaranteed at 1000 C.

TIME
FIGURE 8 - REVERSE BASE CURRENT
versus BASE EMITTER VOLTAGE
B.O
Vcl amp ' 2bo V
I-IBI = 1.5 A
Ie '10 A
0r-TJ'250e

0

°v
o
o

V .....

.....-' V

.....V

V
2.0

1.0

3.0

4.0

5.0

VBE(off}, BASE·EMITTER VOLTAGE (VOLTS)

RESISTIVE SWITCHING
FIGURE 9 - TURN-ON TIME

FIGURE 10 - TURN-OFF TIME
.0

0

's

/
O. 5

O. 5

V

j,v

j

; o. 2
;::
0.1 0

0.05
1.0

--2.0

" /'

'"

.3 o. 3

VBE(oll) = 5 V
VCc= 175 V f---IcliB =5
TJ' 25°C

r---

10

I'-

O. 1

20

Ic, COll.ECTOR CURRENT (AMP)

0.05
1.0

)

.......

.0

'~ ~
5.0

.......

't

w

..
o. 2
;::
VBE(otl) - 5 V
VCC=175V
Ic/lB 5
TJ' 25°C
2.0

3.0

5.0

IC, COllECTOR CURRENT (AMP)

1-704

10

V

20

MJ13330, MJ13331

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

RESISTIVE SWITCHING

RBSOA AND INDUCTIVE SWITCHING

VCEO(sus)

III

r-~----------~--~-------'--~+15

47

n

Rl

TURN ON TIME

R212

181 adjusted to
obtain the forced

hFE desired

50

n

TURN OFF TIME
Use inductIVe sWitching

PW Vaned to Attain

driver as the ,nput to
the r.Slstlve testc,rcUlt

le= lOOmA

All Diodes - 1 N4934
All NPN - MJE200
All PNP - MJE21Q

t-----~----+-----<>

-5

2

Adjust Rl to obtain IS1
For sWitching and RBSOA, A2 '"
For BVCEO(sus)' R2

L.coll

=

ACOII '"

0

00

LCOl' '" 180,u.H
RCOII = 005
Vee'" 20 \J

80 mH Vee = 10 V

0 7

=

n

n

Vclamp = ~OO

Vee= 175\/

v

AL = 17 5
Puis. Width'" 25,u.s

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

t1 Adjusted to

Obtain

Ie

~

:5
I.l
0::

U

t2 "'" Lco,I(ICpkl

lii

Vclamp

vcet Vc-:-::-

...'"

~mp

1-',-1

T,m.

c

~

FIGURE 11 - THERMAL RESPONSE
10

:0

7

i

5

""

;;;
~

o • 05

3

w
u

~

0

02

2

f01

01

"" 00 7 - DOS
~ 005 f-- 002
.... 00 3

....

as
~

Test EqUipment
Scope - Tektronix
475 or Equ;valent

00 2f-'

/
g 001
001

~
002

-

...

ODS

tJUl

ZOJC(t)"' r(t) ROJC
ROJC = 1°CIW Max

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

TJlpkl - TC· Plpkl ZOJClll

DUTY CYCLE, 0 "1]/12

I

01

Plpkl

-r-~~

i
SliGjE riLfj

/

~

--

~

IIIII
02

05

10

2a
t,

50
TIME

(ms)

1-705

10

I

I
20

I I I II III
50

100

I

I
200

I

I II II
500

10k

MJ13330, MJ13331

SAFE OPERATING AREA INFORMATION
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA

100
0

OJ

,.

0:

S

i

t-

a
~

-

20

5.

0
0

~ ::

-

-

- -

-

There are two limitations on the power handling ability
of a transistor: average Junction temperature and second
breakdown. Safe operating area curves Indicate IC-VCE
limits of the tranSIStor that must be observed for reliable
operation. I.e .. the tranSistor must not be subjected to
greater diSSipation than the curves indicate.

100p,=
1.0m,=

2. 0
I. 0
5

FORWARD BIAS

~

Bonding Wife lImIt
Thermally lImited (Smgle Pulse)

10 ms ~

The data of Figure 12 IS based on TC = 2SoC; T J(pk)
vanable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T C ;;, 2SoC. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 May be found
at any case temperature by uSing the appropriate curve on
Figure 14.
T J(pk) may be calculated from the data In Figure 11.
At high case temperatures. thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown.
IS

Second Breakdown Limn

2

TC" 25°C

8 o. I
il 00 5
0.0 2
0.0 1
3.0

MJ13330';:
MJ13331=
50

10

20

50

100

~F"
200

300

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 13 - REVERSE BIAS SWITCHING
SAFE OPERATING AREA

0

REVERSE BIAS

MJ13331 limits Shown

1\
\\

6

For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, R C snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable' during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the complete R BSOA characteristics.

MJ13330 Limit 50 V less

\\

2
IC/IS" 5
r-TC" 100°C
B

\\
\1\
1\ '\VSE(off)" 5 V
1\

VSE(offl" 2 v \

~ ~
:fl a

o

100
200
300
400
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

500

FIGURE 14 - POWER DERATING

100

0

'" t::-..... f"'.-

"'" ~ f'...
THERMAL
DERATING

0

1"---

I'-

SECONO SREAKDOWN
DERATlNG-

"i'.

-....

1"---

"-

r----

"-

0

o

o

40

SO

120

TC, CASE TEMPERATURE (OCI

1-706

160

"'"

"'"

200

MJ13332 MJ13334
MJ13333 MJ13335

MOTOROLA

!

I

Designers Data Sheet
20 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

350-500 VOLTS
175 WATTS

The MJ13332 through MJ13335 transistors are designed for
high-voltage, high-speed, power switching in inductive circuits where
fall time is critical. They are particularly suited for line operated
switchmode applications such as:

Designer's Data for
"Worst Case" Conditions

• Switching Regulators
•

Inverters

The DeSigners Data Sheet permits the design of most circuits

• Solenoid and Relay Drivers
• Motor Controls

entirely from the Information pre-

• Deflection Circuits
Fast Turn-Off Times
200 ns Inductive Fall Time-25 0 C (Typ)
1.8 f.lS Inductive Storage Time-25 0 C (Typ)

sented Limit data - representing
deVice characterIStics boundaries are given to facilitate "worst case"
deSign.

Operating Temperature Range -65 to +2000 C

~

1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

L~"'B
l.
--t

C

o

--

.

MAXIMUM RATINGS
N

'"
1:1

'"'"
~

~

'"~'"

i

i

i

i

Unit

Collector-Emitter Voltage

VCEOlsus)

350

400

450

500

Vdc

Co"ector-Emltter Voltage

V£EV

650

700

750

800

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current - Continuous

IC
ICM

20
30

Adc

IB
IBM

10
15

Adc

PD

175
100
1.0

Watts

-65 to +200

°c

Peak 11)

Base Current - Continuous
Peak 111
Total Power DISSipation @ T C - 2SoC

@TC

= 100°C

Derate above 25°C
Operating and Storage Junction

TJ, T stg

NOTES
1 DIMENSIONS Q AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM
3 POSITIONAL TOLERANCE fOR
MOUNTING HOLE {l

W

1*1113101lll5)0I

It 11131000510 T 1v01 001
ANSIY145,1973

DIM
A
B

Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering

STYLE 1

Symbol

Max

Unit

R8JC

1.0

°C/W

TL

275

°c

Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test' Pulse Width - 5 ms, Duty Cycle ~ 10%.

BASE
2 EMmER
CASE COLLECTOR

PIN 1

c

,

D
F

1-707

MIlliMETERS
MIN MAX
3937
2108

."
,.091

H

J

U
V

76'
1.09

rffs1j~?YJ.x
- Poifo-

0.250 0300
0.038 0043
1.18 0.055 O. 0
3015BSC
1187BSC
1092 BSG
0.430BSC
54iBSC
0215BSC
1&89BSC
O.665BSC
1219 0440 0'3D
38' '19 0150 01&5
2661
10..
533 0190 0.210
'83
381 '19 0150 01&5
CASE , .

•
•a ",8
R

Similar deVice types available with lower VCEO ratings, see the MJ13330 (200 VI and
MJ13331 1250 VI.

l v01

4 DIMENSIONS AND TOLERANCES PER

W/oC

THERMAL CHARACTERISTICS

T

FOR LEADS

Temperature Range

Characteristic

I

III

'"~'"

Symbol

Rating

K

~

MJ13332, MJ13333, MJ13334, MJ13335

..

ELECTRICAL CHARACTERISTICS (TC ' 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)

(IC' 100 rnA, IB' 0)

MJ13335
MJ13334
MJ13333
MJ13332

Collector Cutoff Current

VCEO(sus)

500
450
400
350

-

-

-

-

0.25
5.0

mAde

ICEV

(VCEV ' Rated Value, VBE(off) , 1.5 Vdc)
(VCEV ' Rated Value, VBE(off) , 1.5 Vdc, TC ' 150°C)

Vdc

-

Collector Cutoff Current
(VCE' Rated VCEV, RBE' 50.n, TC' 100°C)

ICER

5.0

mAde

Emitter Cutoff Current

lEBO

1.0

mAde

(VEB ' 6.0 Vdc, IC' 0)

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 12 .

Clamped Inductive SOA with Base Reverse Biased

See F tgure 13

ON CHARACTERISTICS (1)
DC Current Gain
(lC ' 5.0 Adc, VCE ' 5.0 Vdc)

hFE

Collector-Emitter Saturation Voltage

-

60

-

-

-

-

-

-

1.8
5.0
2.4

-

-

1.8
1.8

-

0.02

0.1

~s

0.3

0.7

~s

1.6

4.0

~s

O.~

0.7

~s

Vdc

VCE(sat}

(lC ' 10 Adc, IB ' 2.0 Adc)
(lC ' 20 Adc, IB ' 6.7 Adc)
(lC' 10 Adc, IB' 2.0 Adc, TC' 100°C)
Base-Emmer Saturation Voltage

Vdc

VBE(sat)

(IC' 10 Adc,le' 2.0 Adc)
(lC' 10 Adc, IB' 2.0 Adc, TC' 100°C)

-

10

DYNAMIC CHARACTERISTICS
Output Capacitance
(Vce' 10 Vdc, IE ' 0, f test , 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)

Delay Time
Rise Time
S~orage

Time

td
(VCC ' 250 Vdc, IC ' 10 A,
lel ' 2.0 A, veE (off) , 5.0 Vdc, t p ' 10 ps,
Duty Cycle'; 2.0%)

Fall Time

tr
ts

-

tf

Inductive Load, Clamped (Table 1)

Storage Time
Crossover Time

(lC - 10 A(pk), Vcl amp ' 250 Vdc, IBl - 2.0 A,
VeE(off) , 5 Vdc, TC ' 100°C)

Storage TIme

Crossover Time
Fall Time

(lC' 10 A(pkl. Vclamp ' 250 Vdc, IBl ' 2.0 A,
VBE(off) , 5 Vdc, TC ' 25°C)

(1) Pulse Test: PW· 300 ~s, Duty Cycle'; 2%.

1-708

2.5

5.0

ps

tc

-

0.8

2.0

ps

tsv

-

1.8

-

ps

tsv

tc

0.4

ps

tfi

0.2

ps

MJ13332, MJ13333, MJ13334, MJ13335

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

100

~

o

2:

150'C

.........

a

z

;j'

~

25°C
a

=>

~ 1.6

"I

'"....
u

~c

"-

~

VCE' 5 V

IA

w

::

'I"

C

lOA

> 1. 2

"""'- ~,

u

;

2.0

~

SA

-

0.8

'"
g
o

10

_ 04

8
5.0
0.2

as

1.0
2a
5.0
IC, COLLECTOR CURRENT (AMPS)

i! a

"

10

>

001

20

0.02

FIGURE 3 - COLLECTOR-EMITTER SATURATION REGION

~

2

I.6

w

2.0

«

2

~

Iclis = 5

V /I

g§'"
i!

;;;S f-

II

8

8_

'/

o

>

2

h

::
~

04
25°C

0.2

0.5

I--

150°C

...-:~

150 0 C

a

10
20
5.0
IC, COLLECTOR CURRENT (AMP)

10

Di
~

20

a

0.2

0.5

>

FIGURE 5 - COLLECTOR CUTOFF REGION

/

10
2.0
5a
IC, COLLECTOR CURRENT (AMP)

./

10

20

I

2000

~
C,b

,

I

i

1000

~TJ=150'C

~ 700

lL
./

125'C

./

/

u

z

.....

100'C

1

,

/

--

_f-f--

FIGURE 6 - CAPACITANCE
3000

104

-

10

6

o

>

5.0

FIGURE 4 - BASE-EMITTER VOLTAGE

I
J

Ic/lS - 5

2:

0.1
0.2
0.5
10
IS, SASE CURRENT (AMP)

a

a

o

'"
!.:;

0.05

75°C
FORWARO

f - - r-REVERSE

500

«
....

./

G

C'b..........

<1: 200

,

;:\

r-

",-

lOa

/VCE'250V=
25'C
10- 1
-0.4

-0.2

50

a

+0.2

+0.4

30
01

+0.6

VSE, SASE-EMITTER VOLTAGE (VOLTS)

1-709

0.5

10

5 a 10
50 lUO
VR, REVERSE VOLTAGE (VOLTS)

sou 1000

MJ13332, MJ13333, MJ13334, MJ13335

SWITCHING TIMES NOTE

In reSistive switching circuits. rise. fall. and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However.
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers. current and voltage
waveforms are not in phase. Therefore. separate measurements must be made on each waveform to determine
the total switching time. For this reason. the following
new terms have been defined.
tsv = Voltage Storage Time. 90% ISl to 10% Vclamp
trv = Voltage Rise Time. 10-90% Vclamp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi "" tc' However, at lower test currents
this relationship may not be valid .
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and t sv ) which are
guaranteed at 1000 C.

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

IIIJ

IC~
.,/

1\ 90% IC
Ptlf,- t-II,I~ f- le---\ f--

90% Vc,ampA

/
I- -Isv

IC ........

"'::'elam p _ r-------

1'\

~

I",ffj

V
VeE

I'

IB-

-

90%IBI

- --\- -- - - --

- -

-~

...........

1-+-

10%......
IC pK 2% Ie

lO%Vclamp

TIME
FIGURE 8 - REVERSE BASE CURRENT versus
VBE(off) WITH NO EXTERNAL BASE RESISTANCE
0

.,/

~

"

~

I
u

V

0./

5. 0

V

~

-~ °v
2.

./

./

V

Ie" 10 A
t-IB1" 2 A
Vcl amp = 250 V _
t-TJ" 25°C

-

V
5.0
2.0
VBE(off). REVERSE BASE VOLTAGE (VOLTS)

10

RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN-ON SWITCHING TIMES

FIGURE 10 - TURN-OFF SWITCHING TIMES

2. 0

5. 0

1. 0

IS

2. 0
O. 5

]

:E

O. 21'-. r......

>=

-' o. 1

I,...;;;
VCC-250V
ICIIB" 5

'"
r-

0.05

-......

.3

:E o. 5
>=

Id

0.5

.......

I-- +-

1.0
."

...... .......
........

0.0 2
0.2

~

V

r--

f-.2f--

If

VCE" 250 V
ICIlB" 5
VBE(otf)" 5 V

:;:;;;;

.1

i"""-

1.0
2.0
5.0
IC. COLLECTOR CURRENT (AMP)

10

20

0.0 5

1-710

0.2

0.5

5.0
1.0
2.0
IC. COLLECTOR CURRENT (AMP)

10

20

MJ13332, MJ13333, MJ13334, MJ13335

TABLE 1 - TEST CONOITIONS FOR OVNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEO(susl

RESISTIVE SWITCHING

r-.-----------~--~------_.--~+15

47

n

A1

TURN ON TIME
+10V~Ol

2•

• JL

II)

Z

1-0
::l-

R2

a.!:

J

2

'S1 adjusted to
obtain the foreed

ZC
-z

hFE desired

8

son

Pw Vaned to Atta,"

'e'"

TURN·OFF TIME
Use Inductive Swttcl'ung
driver as the Input to
the resistive test Circuit

lOOmA

All Diodes - 1N4934
All NPN - MJE2QO
All PNP - MJE210

~----*------*---o

J 250 /IF

- 5.2

AdjustR1 to obtain IS1

a

For sWitching and RBSOA. R2 ""

For BVCEO(sus), R2

LeoLI" 80 mH
Reoll '" 0 7 n

Vee

= oa

Lt:;I)I' = 180 ~H
ReOl1 = 005
Vcc='20V

= 10 V

n

Vee"" 250 V
AL"" 50 n

Vclamp"" 250 V

AB adjusted to atta.n deSired IS1

Pulse Width = 10 IJ.s

OUTPUT WAVEFORMS

INDUCTIVE TEST CIRCUIT

'1L±i1
1--"

RESISTIVE TEST CIRCUIT
t1 Adjusted to
Obtain Ie

'f

~'.m.'d

"t-

t1 .... LCOll(1Cpkl

Vee
t2 .... LC01I(lCpk)

vcet vc"[::"

Vclamp

~mp
Time

Test EqUipment
Scope - TektronIX
475 or EqUIvalent

1--12-1

FIGURE 11 - THERMAL RESPONSE
1

7-0-05
5
3::= 02
2

,--

--

01

1:==:005
7
5

t::::o

3-

02

-

--

t..-

"i;,JJi -r t

tOO erw Max
RIlJC{t)
~ 0 CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN

~

READ TIME AI11
I ,

:;;"'"

,~Jtpk) . T~ '" P(pk) At/Je tl )

Ptflil

....t<"

001

t~-J

0.0 2 - SINGLE PULSE
0.0 1
001

ROJCII) _ r('1

-I

I II
002 003

DUTY CYCLE. 0 - ,,112
005

01

02

03

10

05

I, TIME

(ms)

1-711

20

30

50

100

200

300

500

1

1000

MJ13332, MJ13333, MJ13334, MJ13335

SAFE OPERATING AREA INFORMATION
FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA

FORWARD BIAS
There are two limitations on the power handling ability
of a tranSistor. average lunctlon temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the tranSistor that must be observed for reliable
operation, Ie, the tranSIStor must not be sublected to

50

,,;

....

10M'

20
10
5

a::
,.

100M'

I

1m,

'"

02

8

005

~

0.1

~

--

Thermal Llmlt@Tc '" 25°C

~~g;;3

Second Breakdown llimt

00 1
0.00 5

The data of Figure 12 IS based on TC = 250 C, TJ(pk)
va"able depending on power level. Second breakdown
pulse limits are valid for duty cycles to 1 0% but must be
derated when TC ;;;. 250 C Second breakdown limitations
do not derate the same as thermal limitatIOns. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by usmg the appropriate curve on
Figure 14.
T J(pk) may be calculated from the data In Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown.
IS

roc

Bonding Wire Limit
(SmgtePulse)

30.02

greater diSSipation than the curves Indrf;ate

'"

MJ13334
'MJI333S·
100
200
20
50
10
VCE. COLLECTOR EMITTER VOLTAGE IVOLTS)

350 450 600
400 500

FIGURE 13 - RBSOA, REVERSE BIAS SWITCHING
SAFE OPERATING AREA

a

REVERSE 'BIAS
~

\\ . / /'
1\' k-:::: ~
\' ~

2

5
r-- r'c/IB1:>
VBEloffl = 5 V
r-- r- TJ = 100°C

a

i

100

I

\1\\ ~
r-.. ..."\

For inductive loads, high voltage and high 9urrent must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias'
Safe Operating Area and represents the voltage·current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode, Figure 13
gives the complete R BSOA characteristics.

MJ13335
MJ13334
Mj13333
MJ13332

"

"<" ~

I

~ "\ 1,,\i'-..

400
500
200
300
600
VCE, COLLECTOR·EMITTER VOLTAGE IVJLTSI

FIGURE 14 - POWER DERATING
10a

~~

""

l80

'"

o

G

'"

~ 60

r---....

1""'-..

Forward Bias

.......

Therma~
Deratmg ---

z
;::

r-...

Second Breakdown -

....... r-...,

r--...

'"

.............

"-

~ 40

'"~

"'"

~ 20

a
a

,-

Derating

i'-...

40

120
80
Te. CASE TEMPERATURE 1°C)

1-712

160

"" ""'-..

200

PNP

NPN

®

MJ14000 MJ14001
MJ14002 MJ14003

MOTOROLA

III
60 AMPERES

HIGH-CUR RENT COMPLEMENTARY
SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON
POWER TRANSITORS

· .. designed for use in high·power amplifier and switching circuit
applications.

60-80 VOLTS
300 WATTS

= 60 Amperes

•

High Current Capability - IC Continuous

•

DC Current Gain - hFE = 15-100@ IC = 50 Adc

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc

MAXIMUM RATINGS
Rating

Symbol

MJI4000
MJ14001

MJ14002
MJ14003

60
60

80
80

Unit

Collector-Emitter Voltage

Vceo

Collector-Base Voltage

VeBO

Emitter-Base Voltage

VeBO

5

Vdc

Ie

60
15

Adc

Collector Current
Base Current

Continuous

Continuous

IB

Emitter Current - Continuous

Ie

Total Power DisSipation @TC '" 2SoC
Derate above 25°C

Po

Operating and Stor

H
J

90

K

~
30

o
o

40

80

120

160

""

TC. CASE TEMPERATURE ("CI

D

R

"

38.35 3'1.31
19.30 21.08
8.35 1.82
U5
1.80
3.43
29.90 30.40
10.61 11.18
5.12
5.:1
17.1
18.
11.18 12.19
3.14 4.119
24.19 2B.81

INCHES

MI.

1.510
0.160
0.250
0.1161

-

1.111
0.420
0.205
O.
0.440
0.151
0.910

CASE 19HI1

200

240

1-713

TO-204AE

MAX
1.550

0.830
O.
0.1113
0.135
1.11

0.440
0.22
0
0.480
0.181
1.050

MJ14000, MJ14002 NPN, MJ14001, MJ14003 PNP

IIJ

ELECTRICAL CHARACTERISTICS (TC

= 250 C unless otherwise noted)
Symbol

Characteristic

Min

Max

60
80

-

-

1.0
1.0

-

1.0
1.0

-

1.0
1.0

-

1.0

30
15
5

100

-

1
2.5
3

-

2
3
4

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)
(lC = 200 mAde, IS = 0)

Collector Cutoff Current
MJ14000, MJ14001
MJ14402, MJ14003

Collector Cutoff Current
MJ14000, MJ14001
MJ14002, MJ14003

Collector Cutoff Current
(VCB
(VCB

= 60 Vdc,
=80 Vdc,

IE
IE

mA

ICSO

=0)
=0)

MJ14000, MJ14001
MJ14002, MJ14003

Emitter Cutoff Current

lEBO

= 5 Vdc, IC = 0)

(VBE

mA

ICEX

=60 Vdc, VSE(off) = 1.5 V)
=80 Vde, VSE(off) = 1.5 V)

(VCE
(VCE

mA

ICEO

=30 Vdc, IS =0)
= 40 Vdc, IS = 0)

(VCE
(VCE

Vdc

VCEO(sus)
MJ14000, MJ14001
MJ14002, MJ14003

rnA

ON CHARACTERISTICS
DC Current Gain (1)

(lC
(lc
(lc

Collector-Emitter Saturation Voltage (1)

(lC
(lC
IIc

VCE(sat)

= 26 Ado, IB = 2.5 Ade)
= 50 Ado, IS = 5.0 Ade)
=60 Ado, IS = 12 Ado)

Base-Emitter Saturation Voltage (1)
(lC
IIc
(lc

-

hFE

= 25 Adc, VCE =3.0 V)
= 50 Ade, VCE = 3.0 V)
=60 Adc, VCE =3.0 V),

Vdc

Vdo

VBE(sat)

= 25 Ado, IB = 2.5 Adc)
= 50 Adc, IB = 5.0 Adc)
=60 Ade,IB = 12 Adc)

-

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCS
(1)

= 10 Vdc,IE =0, I =0.1

MHz)

Pulse Test: Pulse Width = 300 I'S, Duty Cvcle .. 2%.

FIGURE 2 -

MAXIMUM RATED FORWARD BIASED
SAFE OPERATING AREA

100
70
50
iC 30
20

'"....5~
=>

<..>

'"~

~

,,,:, 1.1

,.,.1 0 ms
50 ms

...

10
70
50
30 f--2.0 I--

r--:

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown .
Safe operating area curves Indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T Jlpk) = 200°C; T C 1$ vanable
depending on conditions. Second breakdown pulse limits are valid
lor dutV evcles to 10% provided T J(pk) .;; 20o"C. T J(pk) mav be
calculated from the data In Figure13. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.
(See AN-415)

...

de

25°C

TC

-

WIre BOnd limIt

I-- - - - - - Thermal Limit

10
~
8 0.7
0.5
~ 03
0.2
01
10

Second Breakdown Umlt

MJ14000, MJ14001
MJ14002, MJ14003120

3.0

50 70

10

20

30

50

70 100

VCE, COLLECTOR - EMITTER VOLTAGE (VOLTS)

1-714

MJ14000, MJ14002 NPN, MJ14001, MJ14003 PNP

TYPICAL elECTRICAL CHARACTERISTICS
PNP
MJ14001. MJ14003

NPN
MJ14000. MJ14002
FIGURE 3 - DC CURRENT GAIN

FIGURE 4 - DC CURRENT GAIN

300 rrrr-,,--,-----r-,--.,----rrTTT-,--.,----,r-,--rrT

300 rrrr-r--r----y-r-T-rTTOT--r--,---r--r-r-r-,

200~~r--~~~;ttt~t=t=t=t=tt~
z

100

e-

70
50

~

z

200 I+H-~I=_:;±_=_-t_-H__+++++-+__+-I--+__H__j

w

'"'"
'"'-'

VCE =3 0 V -+-+-+-H-+I+-~~-l----l'~____l+-l

30

g

20

~

10

_-_-_-_-_- ;~ :25~rc +-I~H-___j~+__+-'_'!t-..~o+t
---TJ=150°C

70
50
30
07 1 0

10

30

50 70

10

20

30

50

3~~7~1~0-~2~0,--3~0~~570~7~O~1~0-~~20~~3~0~~5~0~70

70

IC. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

FIGURE 6 - COLLECTOR SATURATION REGION

FIGURE 5 - COLLECTOR SATURATION REGION
18

in
S
0
C 24 I--

I
TJ =15°C

w

"'~
>

:::'"

~

~

16
12
08

'"
S

~

24

-

TJ=25°C

I
\
\

I\,

'"w

16

~

12

~

08 f---\:IC=10 A

..........

~IC=10A

1'-.

I

~

o

01

0

I--

--

~

>

02030507102030507010

04

;\

\
:'-..

o

01

........

02

03

28

24

24

I-- TJ=25°C

5070

2:.. 16

/,1

w

...........

VBE(s.1) @ IC/IB -10

1

w

"'

V V

~

->

!

VBE(on) @ VCE 30 V
I

I

IC/IB=10

.....

1'1 III
I
~

2030507010

20

30

50

70

IC. COLLECTOR CURRENT (AMPS)

I/V

VBE(s.t) @ IC/IB = to

08

o

......

VBE(~VCE
I-- VCE(s.t)

07 1 0

20

@ IC/IB=10

I
30

5 0 7 0 10

......V

V
/

/

3.0 V

/'

..-t-"

I

20

IC. COLLECTOR CURRENT (AMPS)

1-715

"/

V

12

04

I II

V

I
I
I

E!

I--- VCE(s.t) @

10

I I
I I

Ui 20

07 10

30

I-- TJ =25°C

en 20
S
o
2:.. 16

I

20

FIGURE 8 - "ON" VOLTAGES

FIGURE 7 - "ON" VOLTAGES

08

050710

lB. BASE CURRENT (AMPS)

2B

~
~ 12
o
>

Ii
I

lB. BASE CURRENT (AMPS)

o

II

1\IC=25A

~

\

-

>

IC =25 A

:1

IC=60 A

"'

« 20

S

'-' 04

04

\

0

>

->

II

I II
I II

w

.\ IC=60 A

1

2e

0

I
I

\

)

2B

30

50

70

MJ14000. MJ14002 NPN. MJ14001. MJ14003 PNP

FIGURE 9 - TURN-ON SWITCHING TIMES

FIGURE 10 - TURN-OFF SWITCHING TIMES
40
30

1.0
0.7
05

;-"'.

0.3
02

,

,

-

I,

20
10
07

"-

.:!o

"w
:E

~~

=

~ 01
;:: 007
-" 0 05

;::

-----

......

003

- - - MJ14000, MJ14002 (NPN)
- - - - - MJ14001, MJ14003 (PNP)

002

II
001
07 I 0

I I

I

20

50 70

10

05
03

-

-

Is

::--

-!=:>,

11-

t--

- -

O. I
007

20

50

30

-

1"-.-

I--

MJ14000, MJI4002 (NPN)
MJ14001, MJ14003 (PNP)

-- -

004
07 1 0

70

- --

l-

02

I I III il

30

----

2a

IC, COLLECTOR CURRENT (AMPS)

30

50 70

10

20

30

50

70

IC, COLLECTOR CURRENT (AMPS)

FIGURE 12 - SWITCHING TEST CIRCUIT
VCC

FIGURE 11 - CAPACITANCE VARIATION
10000
7000
5000
3000
:

t;!;

'"~

2000
1000

+20 V r

04

--- -

tr<-lW,2v

f:::::: "..

20ns

t--

- -

VCC

r----- I-TJ~25°~C

tr
Q

-

7

5'"
~
z

~

6

VCE :10 V

(lei' 11 51~HZ

'?

MJI5001(NPN)

,



>'
0.4

~~
-,
1

-i :l :f,

~ 0.8

Q

TJ :100DC I-'"

VCEI..lI

VBE@VCE:2Vdc

w

.-::: -?
.-:::,. 1-1-""

>
-+;> 0.4 i==-100DC

o

2. 1.2

~

VBE @VCE : 2 Vdc

Q

5

J

5

I-- ~

o

0.2

20

'c, COLLECTOR CURRENT (AMP)

.,

TJ: lOODC

100DC

V

V ..... I-"'25DC

vcJ(sal)l@ ,ICIIB : 10

10

k::::

I

II
0.3

0.5 0.7

1

2

IC, COLLECTOR CUR RENT (AMP)

1-719

/

~

7

10

20

MJ15003 NPN
MJ15004 PNP

®

MOTOROLA

III
COMPLEMENTARY SI LICON POWER TRANSISTORS

20 AMPERE

POWER TRANSISTORS
COMPLEMENTARY SILICON
The MJ15003 and MJ15004 are PowerBase power transistors
designed for high power audio, disk head positioners and other
linear applications.

•

High Safe Operating Area (100% Tested) 250W@50V

•

For Low Distortion Complementary Designs

•

High DC Current Gain hFE = 25 (Min) @ IC

140 VOLTS
250 WATTS

= 5 Adc

Lr~
r~,
Es~1
PLANE

MAXIMUM RATINGS
Rating

Unit

Symbol

Value

VCEO(sus)

140

Vdc

Collector-Base Voltage

VCBO

140

Vdc

Emitter-Base Voltage

Collector-Emitter Voltage

VEBO

5

Vdc

Collector Current - Continuous

IC

20

Adc

Base Current - Continuous

IB

5

Adc

Emitter Current - Continuous

IE

25

Adc

Po

250

1.43

Watts
W/oC

TJ,Tstg

-65 to +200

°c

Symbol

Max

Unit

R9JC

0.70

°C/W

TL

265

°c

Total Power oissipation@ TC

= 25°C

Derate above 2SoC
Operating and Storage Junction

PIN 1. BASE
2. EMITTER
CASE, COLLECTOR

Temperature Range
MILLIMETERS

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for <;10s.

DIM MIN

MAX

39.37
- 1.550
21.08
0.B30
7.62 0.250 0.300
1.09 0.039 0.043
3.43
- 0.135
30.40 1.1ll 1.197
I1.1B 0.420 0.440
5.59 0.210 0.20
17.15 0.655 0.675
12.19 0.440 0.480
4.09 0.151 0.161
R
1.050
- 26.67 Collactor connected to case.
CASE 11·01

A
8
C 6.35
0 0.99
E
F 29.90
G 10.67
H 5.3
J 16.64
K I1.1B
II 3.84

TO-3

1-720

INCHES
MIN MAX

MJ15004 PNP

MJ15003 NPN

"ELECTRICAL CHARACTERISTICS ITC

I

= 25°C unless otherwISe noted.)

I

Characteristic

Symbol

Min

Max

Unit

VCEO(Su,)

140

-

Vdc

-

100
2

/.lAde
mAde

ICEO

..

250

,uAdc

lEBO

--

100

"Adc

hFE

25

150

OFF CHARACTERISTICS
Collector· Emitter Sustaining Voltage (11
IIC 200 mAde, 18 0)
Collector Cutoff Current

IVCE
I VCE

= 140Vdc, VBEloff) = 1.5 Vdc)
= 140 Vdc, VBEloff) = 1.5 Vdc,

ICEX
TC

= 150°C)

Collector Cutoff Current
IVCE' 140 Vdc, IB • 0)
Emitter Cutoff Current
IVEB c 5 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VeE': 50 Vdc. t =- 1 s (non-repetitive)
(VeE '- 100 Vdc, t "" 1 s (non-repetitive)

ON CHARACTERISTICS

DC Current Gam
IIC = 5 Adc, VCE

= 2 Vdc)

Collector-Emitter Saturation Voltage
IIc

=5

Adc, Ie

=0

VCEI,at)

-

1

Vdc

VeElon)

-

2

Vdc

5 Adc)

Base-Emitter On Voltage
IIc = 5 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS

MHz

Current-Gain - Bandwidth Product

IIC .. 0.5 Adc, VCE

Output Capacitance
IVce = 10 Vdc, IE

C

10 Vdc. f test • 0.5 MHz)
1000

= 0,

(1) Pulse Test Pulse Width

f test

=:

pF

= 1 MHz)

300 ,us, Duty Cycle'" 2%.

FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA

'. "

0

5
ii:

0

~

7
5

'"
~
~

3

=>

u

~

2

0

~

I

~

o. 5

8 o. 7

-----

---

TC=25 0 C

There are two limitations on the powerhandllng abilitY of a
transistor: average junction temperature and second breakdown,
Safe operating area curves mdicate Ie - v CE limits of the transistor that must be observed for reliable operation; I.e" the transistor must not be subjected to greater dissipation than the curves
Indicate.
The data of Figure 1 IS based on T J(pk) = 200°C; TC is vanable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations Imposed by second breakdown,

TJ = 200'C
BONDING WIRE LIMITED
THERMAL LIMITATION
ISINGLE PULSE)
SECOND BREAKDOWN llMITEO
CURVES APPLY BELOW RATED VCEO

o. 3
o. 2

I
10

20

30

50

70

100

150 200

VCE. COLLECTOR·EMITTERVOLTAGE IVOLTS)

1-721

MJ15003 NPN MJ15004 PNP

..

TYPICAL CHARACTERISTICS
FIGURE 3 - CURRENT GAIN - BANDWIDTH PRODUCT

FIGURE 2 - CAPACITANCES
1000
1500

-

0

MJ150031NPN)
MJ15004 IPNP)

1000

I.

9

8

700

- --

~ 500

7-

Cob

~ 300

Cob

U 200
~

TJ

~ 15 0CJ

VeE'" 10 Vdc

'tes.t" 05MHl

r-M~IPNlp)

t'--,

MJI5003INPN)

......

6

r-.

5

;'\

4

c.i 100

70 ~ f=TJ ~ 15°C
50

1

30
10

0

3

,

1
1

10

1

10

50

30

70

oI

100

0.1

03

VR, REVERSE VOLTAGE (VOLTS)

10

05 07

'C, COLLECTOR CURRENT lAMP)

FIGURE 4 - DC CURRENT GAIN
MJ15003
200 TJ
100
z

~

>-

z

'"'"
u'"
u

'"

~

70
50

~

100°C

MJ15004
VCE

~'1

Vdc_

:::--

r- 15 OC

100

I-

-

TJ

~

100°C

VeE" 2 Vdc

10 0
0 = 25°C
0

30

0

.....

20

~

0

10

" I"':

0
7
5

1
01

0.3

0,50.7

3
1
01

10

10

03

0.5 0.7

IC. COLLECTOR CURRENT lAMP)

10

10

IC. COLLECTOR CURRENT lAMP)

FIGURE 5 - "ON" VOL TAGE
MJ15003

MJ15004

'/
~

1
VSE @ VCE ~ 1 Vdc
8 -TJ

O.

fl

I,

1. 6

~150C

4~rtrTI

::t::= F-"

~_IC1Iitll @ Iclis ~ 10

0
0,2

0.3

0,5

..-::::i/
TJ~100oC

/

~?

/1
III
V

w

'"'"
:;

'">,;

10

III1

V /

1.2

/1/

Ic. COLLECTOR CURRENT lAMP)

1-II

I~I,I.II

rlOoe.1

0,2

~

1-'

I

°

R

o

20

VSE @VCE

8I-TJ;25 0)C

0,4

~C
"II

0.7

/J I

1,6

VrElsal)@ Ic/lS

2 Vdc

~".

i-- .....TJ~100oC

~ 10

~

0.5

15°C
10

IC. COLLECTOR CURRENT lAMP)

1-722

II
V

20

NPN

®

PNP

MJ15011 MJ15012
MOTOROLA

III

Advance InforIDation
10AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY
POWER TRANSISTORS

The MJ15011 and MJ15012 are Power Base power transistors

250 VOLTS
200 WATTS

designed for high·power audio, disk head positioners, and other
linear applications. These devices can also be used in power
switching circuits such as relay or solenoid drivers, dc·to·dc

converters or inverters.
•

High Safe Operating Area (100% Tested)
1.2 A@ 100 V

•

Completely Characterized for Linear Operation

•

High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V
VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A

•

For Low Distortion Complementary Designs

lr~
r~.
ES:?-t;:
PLANE

I

MAXIMUM RATINGS
Rating
Collector~Emrtter

Voltage

Collector~Em Itter

Voltage

Emitter-Base Voltage
Collector Current - Continuous

-Peak III
Base Current - Contmuous
-Peak(l)
Emitter Current - Continuous

-Peak III
Total Power DISSipation @ T C

= 2SoC

Symbol

Value

Unit

VCEOlsus)
VCEX
VEB
IC
ICM
IB
IBM
IE
IEM
PD

250

Vdc
Vdc
Vdc
Adc

Derate above 25°C
Operatrng and Storage Junction

TJ, T stg

250
5
10
15
2
5

Adc

12
20

Adc

200
1.14
-65 to +200

Watts
W/oC

Max
0.875
265

Unit

°c

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

MILLIMETERS
DIM MIN MAX

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal ReSistance, JunctIon to Case

Maximum Lead Temperature for
(1)

Symbol
ROJC
TL

°C/W
uc

NOTE:
1. DIM "0" IS OIA.

A
B
C
0
E
F

G

Soldering Purposes

H

Pulse Test: Pulse Width = 5 ms, Duty Cycle'; 10%.

J
K
0

R

-

39.31
1.5511
21.08
0.B3O
1.62 0.250 0.300
1.09 0.039 0.043
3.43
0.135
29.90 30.40 1.111 1.191
10.61 11.18 0.420 0.440
5.33
5.59 0.210 0.220
16.64 11.15 0.655 0.615
11.18 12.19 0.440 0.480
4.09 0.151 0.161
3.B4
26.61
1.050
Collector connected to case.
CASE 11-01
6.35
0.99

-

(TO·3)
This 1$ advance mformatlon and specificatiOns are subject to change without notice.

1-723

INCHES
MAX
MIN

MJ15011 NPN, MJ15012 PNP

I

ELECTRICAL CHARACTERISTICS

(TC

= 25 0 C

unless othe,w"e noted)

Symbol

Min

Max

Unit

VCEO(sus)

250

-

Vdc

'CED

-

1

mAde

'CEX

-

500

~Adc

'EBO

-

500

~Adc

20
5

100

-

0.8
2.5

-

2

Characteristic
OFF CHARACTERISTICS

Collector-Em Itter 8 rea kdown Voltage (1 )
(lC

= 100 mAl

Collector Cutoff Current
(VCE

= 200 Vdc)

Collector Cutoff Current
(VCE = 250 Vdc, VBE(off)

= 1.5

Vdc)

Emitter Cutoff Current

(VBE

= 5 Vdc)

ON CHARACTERISTICS (1)

DC Current Gain
(lC = 2 Adc, VCE
(lc = 4 Adc, VCE

= 2 Vdc)

Collector-Emitter Saturation Voltage
(lC
(lC

= 2 Adc,
=4 Ado,

IB
'B

Vdc

VCE(sa')

=0.2 Adc)
=0.4 Adc)

Base-Emitter On Voltage
(lC

-

hFE

= 2 Vdcl

VBE(on)

=4 Adc, VCE = 2 Vdc)

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB

= 10Vdc, f = 1 MHz)

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

(VCE =40. Vdc, t = 0.5 s)
(VCE = 100 Vdc, t = 0.5 s)
(1) Pulse Test: Pulse Width == 300 MS, Duty Cycle"; 2%.

FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA

FIGURE 1 - DC CURRENT GAIN
200

-

--

10
VCE" 2 Vde

.......

100

.......

i"'..

z

;;:

....
'"

"-

0

~

,\1'

B 20 r-MJI5011--

'"'c

i

r- MJ15012 - -

de
1

\

0

5

r- - - - 1 r-

5

1-.

2
0.1

0.2

0.5

1

10

'C, COLLECTOR CURRENT

BONDING WIRE LIMIT
THERMALLlMIT@TC"25'C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT

'\.
'\.

1

15

10

30

50

70

100

150

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-724

100

300

®

NPN
MJ15022
MJ15024

MOTOROLA

III
16 AMPERE

SILICON POWER TRANSISTORS

SILICON
POWER TRANSISTORS

The MJ 1 5022 and MJ 15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other
linear applications .

200 and 250 VOLTS
250 WATTS

•

High Safe Operating Area (100% Tested) 2A@80V

•

High DC Current Gain hFE = 15 (Min) @ IC

=

8 Adc

lr~
r~K
ESEATlN(~
PLANE

MAXIMUM RATINGS
Symbol

MJ15022

I

MJ15024

Unit

Collector-Emitter Voltage

VCEO

200

250

Vdc

Collector-Base Voltage

VCBO

350

400

Vdc

Emitter-Base Voltage
Collector-Emitter Voltage

I
I

VEBO

Rating

Collector Current - Continuous

VCEX
IC

Peak (11

5
400

Vdc

16
30

Adc

Vdc

Base Current - Continuous

IB

5

Adc

Total Power Dissipation@TC=250C

PD

250
1.43

Watts

-65 to +200

°c

Derate above 2SoC
Operating and Storage Junction

TJ.Tstg

W/oC

SlYLE 1:
.
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

NOTE:
1. DIM "0" IS OIA.

Temperature Range
MILLIMETERS
DIM MIN MAX

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

I

I

Symbol

I

Max

ReJC

I

0.70

I

(1) Pulse Test: Pulse Width"" 5 ms, Duty Cycle" 10%.

Unit

uC/W

A
B
C
D
E
F

G
H
J
K
Q

R

1-725

INCHES
MIN
MAX

-

39.37
21.08
7.62 0.250
1.09 0.039
3.43
29.90 30.40 1.177
10.67 11.18 0.420
5.33
5.59 0.210
16.64 17.15 0.655
11.18 12.19 0.440
4.09 0.151
3.84
26.67
Collector connected to case,
CASE 1·04
(TQ·204AA)
6.35
0.99

-

1.&50

0.B3O
0.300
0.043
0.135
1.197
0.440
0.220
0.675
0.480
0.161
1.050

MJ15022, MJ15024 NPN

-

ELECTRICAL CHARACTERISTICS ITC = 25 0 C unle.. otherwise noted.)

I

I

Cha,actaristie

Symbol

Min

Max

200
250

-

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)

VCEOl,u,1
MJ15022
MJ15024

IIc = 100 mAde, 18 = 01

Collector Cutoff Current

ICEX

(VCE = 200 Vde, V8E(off) = 1.5 Vde)
(VCE = 250 Vde, V8Eloff) = 1.5 Vde)

MJ15022
MJ15024

Collector Cutoff Current
(VCE = 150 Vde, 18 = 0)
(V CE = 200 Vde, 18 = 0)
(VCE = 5Vde, 18

250
250

-

500
500

-

500

15
5

60
-

-

1.4
4.0

VBElon)

-

2.2

Vde

fT

4

-

MHz

Cob

-

500

pF

ICEO

IE80

= 0)

~Ade

-

MJ15022
MJ15024

Emitter Cutoff Current

-

-

/JAde

IJAdc

80th

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased
(VeE::: 50 Vdc, t "" 0.5 5 (non-repetitive))
(VeE::: 80 Vdc, t::: 0.5 5 (non-repetitive))

ON CHARACTERISTICS

DC Current Gain
IIc
IIc

Collector-Emitter Saturation Voltage
IIC
IIc

-

hFE

= 8 Ade, VCE = 4 Vde)
= 16 Ade, VCE = 4 Vde)

Base·Emitter On Voltage
IIc = 8 Ade, VCE

Vde

VCElsatl

= 8 Ade, 18 =0.8 Ade)
= 16 Ade, IB = 3.2 Ade)
= 4 Vde)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product
IIc

= 1 Ade,

VCE

= 10 Vde,

f test

= 1 MHz)

Output Capacitance
IVC8

= 10 Vdc,

IE = 0, fteS!

111 Pulse Test: Pulse Width

= 1 MHzl

= 300 "', Duty Cycle"

2%.

There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 1 is based on T J(pk);:: 2000 e;Te is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-726

MJ15022, MJ15024 NPN

TYPICAL CHARACTERISTICS

-

FIGURE 2 - CAPACITANCES
400 0
3000

r-

FIGURE 3 - CURRENT,GAIN-BANDWIDTH PRODUCT
TJ" 25°C

C,b

1

9
8

TJ 0 250C
VCE 0 10 V

~lOO 0

7

fTesf

w

6

u

~ 50 0

:::;J

i"--

5

t-.

U

t-

u'

1 MHz

.......

4

Cob

=:

"-

3

100
1
40
03

0
05

50

10

30

50

100

03

300

05

FIGURE 4 - DC CURRENT GAIN
200

~

100

VCE 0 4 V
"~

TJ "" 25°C

50

10

i

8

t--

~

t-

o

o

~1 0

~

/

~1 0

" l'

u

JLj,

1. 4

?

~

O

':3

TJ o 150C- VBElco)@VeE 0 4 V

o 08
>
>'

I I

1r- f--150C05

1.0
20
50
Ie. COLLECTOR CURRENT lAMPS)

10

0
01

10

-+- ;--

"""

VCEls,,)@ lellB 010

~~

I II

r - f-- IOO OC

0

10
02

50

FIGURE 5 - "ON" VOLTAGE

>-

I

20

TJ'" lOooe

z

~

10

IC. COLLECTOR CURRENT lAMPS)

VR, REVERSE VOLTAGE IVOLTS)

05

10

IC. COLLECTOR CURRENT lAMPS)

FIGURE 6 - COLLECTOR SATURATION REGION

'"c3>-

11 JJ

l. 8

TJ

?

w

'"~

1\

14

==

25°C

Ll

o
>

~

w

:: 1 0

ill

'~"
o

o.

~

>

1\
IC

1
0
0.03

\

\

6

o

u

lODoe
1.0

0

16A

4J:'

III I

III
01

8A

H-I+

-

t'-

1 1
01

05

10

10

'B. BASE CURRENT lAMPS)

1-727

5.0

10

30

~

50

10

10

PNP

MJ15023
MJ15025

®

MOTOROLA

16 AMPERE

SILICON POWER TRANSISTORS

SILICON
POWER TRANSISTORS

The MJ15023 and MJ15025 are PowerBase power transistors
designed for high power audio, disk head positioners and other
linear applications .

200 and 250 VOL TS
250 WATTS

•

High Safe Operating Area (100% Testedl 2A@80V

•

High DC Current Gain hFE = 15 (Mini @ IC = 8 Adc

L~rE~:=iLc

~~

1:E

D

K

i

SEATING PLANE

MAXIMUM RATINGS
Symbol

MJ 15023

I

MJI5025

Unit

Corrector-Emitter Voltage

VCEO

200

I

250

Vdc

Collector-Base Voltage

VCBO

350

I

400

Vdc

EmItter-Base Voltage

VEBO

5

Vdc

Collector-Emitter Voltage

VCEX

400

Vdc

IC

16
30

Adc

Rating

Collector Current - ContInuous
Peak (11

Base Current - Continuous

IB

5

Adc

Total Power DlsslpatlOn@Tc - 2SoC
Derate above 2SoC

PD

250
1.43

Watts

-65 to +200

DC

Operating and Storage Junctton

TJ, T stg

WiDC

STYLE 1
PIN I. BASE
1 EMITTER
CASE CO LLE CTO R

NOTE

101M "Q" IS OIA

Temperature Range
INCHES
MIN MAX
1.550
0.830
.3
0.043
0.055 0.070
1.187 sse
0.430 SSC
0.215 SSC
0.865 sse
0.440 0.480

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width'" 5 ms, Duty Cycle

Symbol
ROJC
<',

J
I

Max

Unit

0.70

DCiW

10%.

F
G
H
J
K

.150

Q

U

2.54

V

81

0.100
0.1

CASE )·04
(TO·204AAI

l-728

.1 5
1.050
0.120
0.1

MJ15023, MJ15025

III

ELECTRICAL CHARACTERISTICS ITC = 250 C unless otherwise noted.I

I

I

Characteristic

Symbol

Min

MIX

200
250

-

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)

lic = 100 mAde, IS = 01

VCEOlsusi
MJ15023
MJ15025

Collector Cutoff Current

IVCE
IVCE

I CEX

= 200 Vde, VSEloifi = 1.5
= 250 Vde. VSEloff) = 1.5

Vdel
Vdc!

= 150 Vde,
= 200 Vde,

250
250

-

500
500

-

500

15
5

60

-

-

1.4
4.0

VSElon)

-

2.2

Vde

fT

4

-

MHz

Cob

-

600

pF

ICED

IS = 0)
IS = 0)

MJ15023
MJ15025

Emitter Cutoff Current
IVCE = 5 Vde, IS

-

MJ15023
MJ15025

Collector Cutoff Current
IVCE
IVeE

-

IESO

= 01

,/JAde

,/JAde

~Ade

Both

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased
(VeE = 50 Vdc. t "" 0.5 s (non-repetitive))
(VeE'" 80 Vdc, t = o.s s (non-repetitive))
ON CHARACTERISTICS

DC Current Gain

-

hFE

lic = 8 Ade, VCE = 4 Vdc!
lic = 16 Ade, VCE = 4 Vde)
Collector-Emitter Saturation Voltage

Vde

VCEls.tl

lic = 8 Ade, IS = 0.8 Adc!
lic = 16 Ade, IS = 3.2 Ade)
Base-Emitter On Voltage

lic = 8 Ade, VCE = 4 Vdcl
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
lic = 1 Adc, VCE = 10 Vdc, f test = 1 MHz)

Output Capacitance
(VCS

= 10 Vdc,

IE

= 0,

f test

= 1 MHz)

(1 I Pulse Test: Pulse Width = 300 "s, Duty Cycle';; 2%.

FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA

There are two limitations on the powerhandling ability of a

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 1 IS based on T J(pk) = 200o C;TC is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed bV second breakdown.

02

010~1~~of.2~LJ~LU_~~~~~~~~~-L~-L5~0~0~1~k
VCE. COLLECTOR·EMITTER VOLTAGE IVO LTSI

1-729

MJ15023, MJ15025

III
TYPICAL CHARACTERISTICS

FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT

FIGURE 2 - CAPACITANCES

......

4000
3000

C'b

....... ..:.

IT/;
:

I

'"~

II

>-

TJ; 15°C

u

i':

i5~~

8

VeE'" 10 V

~

1000

'Test'" 1 MHz

'"

>-

z

Q

g 500

"

........

~

;3
u'

t'--...

~

Cob

«~

..... 1--

........
4

...........
100

...

~

~

2
I r---

~

=>

u

0_3 0.5

5.0
10
30 50
VR, REVERSE VOLTAGE (VOLTS)

1.0

l"-

z

100

300

.£-

---

01

03

z

~

i
u
Q

~

TJI; IJOOC

100

ll"1"I'--:

50

TJ; 15°C

.'-

I-- TJ; 15°C

1'\

10
5.0

f-100oC
0.2

1.0
01

0.5

1.0
10
IC, CO LLECTO R CURR ENT

50

10

50

10

1.8

VCE;4.0V

20

10

FIGURE 5 - "ON" VOLTAGE

FIGURE 4 - DC CURRENT GAIN
200

05

IC, COLLECTOR CURRENT (AMPS)

10

10

r---t01

Ik;~PS)

1-730

---

VBE(on)@VCE;4 0 V

I II

.......-r
f-- 2;OC f-

r-...

~

-'- ~

VCE(sat) '" Ie/Is"" 10

I-n"j'

I

L..J..",oool""

1.0
2.0
0.5
IC, COLLECTOR CURRENT (AMPS)

Ii"
~
100°C
5.0

10

MJ15026 NPN
MJ15027 PNP

@ MOTOROLA

16 AMPERE

SILICON POWER TRANSISTORS

SILICON
POWER TRANSISTORS

The MJ15026 and MJ15027 are PowerBase transistors
designed for high power audio, disk head positioners and other
linear applications.

200 VOLTS
NPNand PNP

•

High Gain, Complimentary Silicon Power Transistors for Audio
and Other Power Amplifiers

•

High Safe Operating Area (100% Tested)
50V-5.0A
BOV-2.0A

•

Excellent Frequency Response
fT = 24 MHz (Typ)

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

200

Vdc

Collector-Base Voltage

VCBO

200

Vdc

VEB

5.0

Vdc

IC

16

Adc

Emitter-Base Voltage
Collector Current -

Continuous

32

-Peak(l)
Base Current -

Continuous

Total Power Dissipation @ T c;: 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

Unit

IB

70

Po

250

Watts
W/OC

TJ, Tst9

200

°c
DIM
A

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

STYLE 1
PIN 1. BASE
2. EMITTER
CASE COLLECTOR

Adc

Symbol

Max

Unit

ReJC

0.7

°C/W

(1, Pulse Test Pulse Width =5 0 ms. Dutv Cycle ~ 10%.

MILLIMETERS
MIN MAX

8
C

6.35
0.9i
1.40
E
F 29.90
8 10.67
H 5
J 16.64
K 11.18
Q
3.81
R
U
2.54

D

-

21.08
7.62
1.09
1.78

30.40
11.18
5.59
17.15
12.19
4.19
26.67
3.05

INCHES
MIN MAX
0.250
0.038
0.055
1.177
0.420
0.210
0.655
0.440
0.150

-

0.100

CASE '·04

1-731

0.830
0.300
0.1M3
0.D10
1.191
0.440
0.20
0.&75
D.48D

0.165
1.050
0.120

MJ1~026

OJ

I

NPN. MJ15027 PNP

ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

VCEO(sus)

200

Max

Unit

OFF CHARACTERISTICS
Collector-Eminer Sustaining Voltage (1)
(lC; 20 rnA, IB; 0)

Vdc

Collector Cutoff Current
(VCE; 200 Vdc, VBE(off); 1.5 Vdc)

ICEX

-

1.0

rnA

Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)

ICEO

-

1.0

rnA

Emitter Cutoff Current

lEBO

-

1.0

rnA

ISlb
-

5.0
2.0

(VCE = 5.0 V, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward-Biased
(VCE = 50 Vdc, t = 0.5 s (non-repetitive))
(VCE = BO Vdc, t = 0.5 s (non-repetitive))

Adc

I

·ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 Adc, VCE = 5.0 V)
(IC = 16 Adc, VCE = 5.0 V)

-

hFE

Collector-Emitter Saturation Voltage

25
6.0

150

-

1.0
3.0

-

2.0

Vdc

IT

15

-

MHz

Cob

-

750

pF

VCE(sat)

(lC = 5.0 Adc, IB'= 0.5 Adc)
IC = 16 Adc, IB = 4.0 Adc)
Base-Eminer On Voltage
(lC = 5.0 Adc, VCE = 5.0 Vdc)

VBE(sat)

Vdc

DYNAMIC CHARACTERISTICS
Current-Gain -

Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, Itest = 1.0 MHz)
Output Capacitance

(VCB = 10 Vdc, IE = 0, Itest = 1.0 MHz)
(1) Pulse Test: Pul•• Width

=300 ",5, Dutv Cycle:s;;; 2%

FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA

~

- -

30

,

:0

!!. 10

ffi

f;;:;

'"

~

,

There are lWO limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) ='200°C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by
second breakdown.

1.0ms::: 0.1 ms

,
,

de

~

B 3.0 t:;;:

t;

100 ms

1.0

- :;;: Bonding Wire Limit
~ :;;: Thermal limitation.
Second Breakdown Limited

l== -= ==

8

~

0.3
0.1

1.0

3.0
10
30
100
300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

1-732

MJ15026 NPN, MJ15027 PNP

-

TYPICAL ELECTRICAL CHARACTERISTICS
MJ15026 NPN

MJ15027 PNP

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 - DC CURRENT GAIN

-

-

z
~ 100

20 0

,

100

to

50



'"

I I
VaE(on) VCE = 5.0

r-

O. 6

-

1tt---t-t-t"tt"

~

il

0.02

0.05

~
g 0.8 r-I- VaE(on) VCE = 5.0

...-:::"

---

0.1
0.2
0.5
1.0
2.0
IC. COLLECTOR CURRENT (AMPS)

'/

~ 1.21--H-f.jf++++--+-+-I+t+f+l--+-+-l-h~rtII;/.J-..J,

--

'" 0.4 He--I-Hil-++
+11 ttt+!,-----+
-t--+-!-!-'-t++!__-!-L.,...-+"~_++I_!__....j

VCEls.t) Ic/la = 10

o. 2r-

W1"~-+-H-++~+:-I
1/' _

= 100 o C·.+-_f--H-H-++l¥-l'"H

w
i .
~ 1.6 f-+-I-hf++H--+-+-I-++++++--+-+-H-++<~~,H

VI
I

1.0

,, ,, ""
""

T~ =1 2

I-+-+++++H-----+ TJ

I

TJ = 25°C
TJ = 100°C
I I

~
~

10

FIGURE 7 - "ON" VOLTAGE

"ON" VOLTAGE

2. 0

Q

r-.

I

1-++++++1+---+_

w

~
11-1'11'1

IC=8.0A
IC =4.0 A

-

0.1
0.2
0.5
1.0
la. BASE CURRENT lAMP)

20

2

"

"'N-.

L

10

' \ IC=16A

ll161~

IC = 4.0 A

_ TJ = 25°C

11

I"

Ic

1\

6

I I III'

\

5.0

2.0

II

6

0.1
0.2
0.5 1.0
2.0
IC. COLLECTOR CURRENT (AMPS)

FIGURE 5 - COLLECTOR SATURATION REGION

FIGURE 4 - COLLECTOR SATURATION REGION

2. 0

.0.05

1-1- VCE(sat) Ic/la = 10
5.0

10

20

0.02 0.04

1-133

0.1
0.2 0.4
1 0 2.0 4_0
IC. COLLECTOR CURRENT (AMPS) "

10

20

MJ15026 NPN, MJ15027 PNP

OJ

TYPICAL ELECTRICAL CHARACTERISTICS (continued)
MJ15026 NPN

MJ15027 PNP

FIGURE 8 - CURRENT GAIN·BANDWIDTH PRODUCT

FIGURE 9 - CURRENT GAIN·BANDWIDTH PRODUCT

~ 100

~

~

~

--

t;
:::I
o

if

i

10

~
~

I

l-

30

Q

g:

">-

i'-.

0

;:

10

0

z

I-I--

VeE-l0V
'le.1 " 1.0 MHz

I--

Jlllr I

1.0
0.02

;i!
Z
<1

0.05

0.1 0.2
0.5
1.0 2.0
Ie. COLLECTOR CURRENT (AMPS!

5.0

I--

~

20

VCE" 10V
'lest" 1.0 MHz
TJ "25°C

I--

ii3

10

I-

r-

'"
>-

\

c

i3

~

~
0

r-....

1.0
0.02

-t-+-IH-l-ttt--+-+-+++t+tt--l

IIJlII 1
0.05

0.1 0.2
0.5
1.0 2.0
IC. COLLECTOR CURRENT (AMPS!

5.0

10

20

FIGURE 11 - CAPACITANCE VARIATION

FIGURE 10 - CAPACITANCE VARIATION

10000

~
300 0

~ Cib

TJ "25°C
Cib

~100 0

!:j

~

~

z

~

~

TJ - 25°C

~
~

300

............

100

--

<3

1ft

100
10
VR. REVERSE VOLTAGE (VOLTS!

1.0

1000

100
1.0

1000

r-

10
100
VR. REVERSE VOLTAGE (VOLTS!

cr
1000

FIGURE 12 - TYPICAL THERMAL RESPONSE

g

~

:0

a:
o

0" 0.5

0.5

~

.

0.2

I-

;!
~

o. 1 1-0.0

......
Duty Cycle. D 11/12 6JC(11 - r(11 6JC
6JC - D.70 0 C/W Max
P(Pkl J 1 J L o Curves apply for power

..-:

1.

f-+l
-+I

0.0

J1!

V
15
;;;.0.02
>-

~.

it

:.-- ~ ".,

0.1

~ 0.05

ffi

i!:

p-

0.2

~

lil

t2

I-

Pulse Train shown

Read at time t1
TJ(pk!- TC " P(pkI6JC(11

,c
Single
Pul.e

I

I I I
0.01

til--

1.0

0.2

0.5

1.0

20
t. TIME (msl

1-734

50

10

20

50

100

1000

®

MJ16002
MJ16004
MOTOROLA

III

Designers Data Sheet
5 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCH MODE III SERIES
NPN SILICON POWER TRANSISTORS

450 VOLTS
125 WATTS

These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for line-operated switchmode applications,
The MJ16004 is a selected high-gain version of the MJ16002 for
applications where drive current is limited,

Designer's Data for
"Worst Case" Conditions

Typical Applications:
•

Switching Regulators

•

Inverters

The Designers Data Sheet permits
the design of most circUits entirely from
the mformation presented Limit data
- representing de\(lce characteristics
boundaries ~ are given to facilitate
"worst case" design.

• Solenoid and Relay Drivers
•

Motor Controls

•

Deflection Circuits

•

Fast Turn-Off Times
50 ns Inductive Fall Time - 75°C (Typ)
70 ns Inductive Crossover Time - 75°C (Typ)
500 ns Inductive Storage Time - 75°C (Typ)

•

Operating Temperature Range -65 to +200°C

•

100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Max

Unit

VCEOlsus)

450

Vdc

VCEV

850

Vdc

Emitter Base Voltage

VEB

60

Vdc

Collector Current - Continuous
-Peak(1)

Ie

5.0
10

Adc

ICM

Base Current - Continuous
-Peak(1)

IB
IBM

4.0
8,0

Adc

Po

125
715
0.714

Watts

W/oC

TJ, Tst9

65 to +200

°c

Symbol

Max

Unit

R8JC

1.4

°C/W

TL

275

°c

Collector-Emitter Voltage

Total Power Dissipation @ Te == 25°C
@TC= lOO°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

STYlE 1
PIN 1. BASE
2 EMmER
CASE COLLECTOR

a

,0F~

-1·-·

------,,---,'r .

NOTES
1 OIMENSIONS Q ANO V ARE OATUMS
2
IS SEATING PLANE ANO DATUM
3 POSITIONAL TOLERANCE FOR
MOUNTING HOLED

OJ

1·1·'3IUOD5I@ITlv@!
FOR LEAOS
I .1.'3I..U5I@T Iv@1 u@1
4 DIMENSIONS ANO TOLERANCES PER
ANSIY145,1973

THERMAL CHARACTERISTICS

Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1 IS" from Case for 5 Seconds
C11 Pulse Test. Pulse W,dth

=5

ms, Duty Cycle

~

10%

CASE 1-05 TO-3 TYPE

1-735

R

I

MJ16002. MJ16004

-

MJ16002

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEClisus)

450

-

-

Vdc

-

-

0.25
1.5

-

2.5

mAde

-

1.0

mAde

OFF CHARACTERISnCS (1)
Collector-Emitter Sustaining Voltage (Table 2)
(lC = 100 mA.IB = 0)
Collector Cutoff Current
(VCEV = 850 Vdc. VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc. VBE(off) = 1.5 Vdc. TC = 100°C)

ICEV

Collector Cutoff Current
(VCE = S50 Vdc. RBE = 50 n. TC = 100°C)

ICER

-

mAde

Emitter Cutoff Current

IESO

-

(VES = 6.0 Vdc. IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Sase Forward aiased

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 1.5 Adc. la = 0.2 Adc)
(IC = 3.0 Adc. la = 0.4 Adc)
IIC = 3.0 Adc. la = 0.4 Adc. TC = 100°C)

VCE(sat)

Base-Emitter Saturation Voltage

VSE(sat)

IIc = 3.0 Adc. la = 0.4 Adc)
IIc = 3.0 Adc. la = 0.4 Adc. TC = l000C)
DC Current Gain
(IC = 5.0 Adc. VCE = 5.0 Vde

hFE

Vdc

-

-

1.0
2.5
2.5

-

-

1.5
1.5

Vdc

5.0

-

-

-

DYNAMIC CHARACTERISTICS
Output Capacitance

(Vca = 10 Vde. IE = O. f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time

Storage Time
Fall Time
Storage Time
Fall Time

IIC= 3.0Ade.
VCC = 250 Vde.
IBI = 0.4 Ade.
PW= 30 ~s.
Duty Cycle ';;2.0%)

(lB2 = O.S Ade.
Ra2 = S.O ill

(VBE(off) = 5.0 Vde)

td
tr
ts
tf
ts
tf

-

30
100
1000
60
400
130

100
300
3000
300

500
100
120
600
120
160

1600
200
250

n.

-

-

Inductive Load (Table 2)
Storage Time

Fall Time
Crossover Ti me
Storage Time
Fall Time
Crossover Time

(IC = 3.0 Ade.
lSI = 0.4 Adc.
VaE(off) = 5.0 Vdc.
VCE(pk) = 400 Vdc)

tsv
tfi
te
tsv
tfi
te

(TJ = 100°C)

(TJ = 150°C)

(11 Pulse Test: PIN - 300 .s. Duty Cycle ';;2%.

·/If=~
IBI

1-736

-

-

-

-

ns

MJ16002, MJ16004

III

MJ16004
ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwIse noted)
Characteristic

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 2)
(lc; 100 mA, IS ; 0)

VCEO(sus)

Collector Cutoff Current

ICEV

(VCEV; S50 Vdc, VSE(off); 1.5 Vde)
(VCEV; 850 Vdc, VSE(off) ; 1.5 Vdc, TC; 100°C)
Collector Cutoff Current

450

-

-

-

-

0.25
1.5

-

2.5

mAde

-

1.0

mAdc

Vdc
mAde

ICER

-

IESO

-

(VCE; 850 Vdc, RSE; 50 0, TC; 100°C)
Emitter Cutoff Current

(VES ; 6.0 Vde, IC ; 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 15

Clamped Inductive SOA with Base Reverse BIBsed

See Figure 16

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage

Vde

VCE(sat)

-

(lc ; 1 .5 Adc, IS; 0.15 Adc)
(IC; 3.0 Ade, IS; 0.3 Adc)
(lc; 3.0 Adc, IS; 0.3 Adc, TC; 100°C)
Base-Emitter Saturation Voltage

-

1.0
2.5
2.5

-

-

1.5
1.5

7.0

-

-

-

30
130
BOO
80
250
60

100
300
2700
350

ns

400
80
90
450
100
110

1300
150
200

Vde

VSE(sat)

-

(lC; 3.0 Ade, IS; 0.3 Adc)
(lc; 3.0 Adc, IS; 0.3 Adc, TC; 100°C)
DC Current Gain

hFE

(lc; 5.0 Adc, VCE; 5.0 Vde
DYNAMIC CHARACTERISTICS
Output Capacitance

(VCS; 10 Vdc, IE; 0, f test ; 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
Rise Time
Storage Time

Fall Time
Storage Ti me

Fall Time

(IC; 3.0 Adc,
VCC; 250 Vdc,
IBI ; 0.3 Adc,
PW; 30 I's,
DUly Cycle ';2.0%)

(IS2; 0.6 Adc,
RS2; B.O 0)

(VBE(off); 5.0 Vdc)

Id
Ir
Is
If
ts
tf

-

tSY
IfI
Ie
ISY
Ifi
Ic

-

-

-

Inductive Load (Table 2)
Storage Time

Fall Time
Crossover Time

Storage Time

Fall Time

(IC; 3.0 Adc,
lSI; 0.3 Ade,
VSE(off); 5.0 Vde,
VCE(pk); 400 Vde)

(TJ; 100°C)

(TJ; 150°C)

Crossover Time
(1) Pulse Test: p.W - 300 P.s, Duty Cycle ~2%.

Ie

'Pf=iii1

1-737

-

-

ns

MJ16002, MJ16004

TYPICAL STATIC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
60
50

2.0

..--r---.-rI'ITlI-'1rr--\r-"--'-""'(l'"'"'lI'llrTTIII--r-,.------,

III

4A

TJ -100°C
30

~

2~

~

I

55°C

5.0 f - - -VCE

o

30
01

0.3

~

50V

I'-.....r-,
o2

0 5 0 7 10

20

30

50 70

10

0.2

IC. COLLECTOR CURRENT (AMPS)

~

3.0
20

',.'"3

10

i='"
25

0.50

ti

0.20

0

-

TJ

'/

-

'\.1

0.05
0.1

0.2

05

1.0

g

20

'"

1.5

~

10

~

/

/,

° 25°C

~

~ 0.70

./
..... - Plo 5
"TJ

;i\ 0.50

25°C

2.0

~
10

5.0

Plo 5
TJ ° 25°C

,

-

0.30
0.1

(31 010
TJ ° 100°C

I I
0.5

02

/

~:3
9

100 0 C

I

f--

10- 1
-0.4

C,b

L

f

.,....
L
FORIYARO

/

L

TJ

° 25°C

r;-

~ 1000

/

F== =750C
REVERSE

100

i/

/

r-- TJ" 150°C
102 F== =125 oC
101

10

10000

103

'"

5.0

20

FIGURE 6 - CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION
104

~

1.0

IC. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)

B

3.0

FIGURE 4 - BASE-EMITTER VOLTAGE

~

10

TJ - 100°C

Plo 10

~w 0.10

1
....

2.0

?

/
PI

.r

0 5 0.7 1 0

3.0

50

w

0.3

lB. BASE CURRENT (AMPS)

FIGURE3 - COLLECTOR-EMITTER SATURATION VOLTAGE

~

5A

I

Cob

/

~250C

VCP250Vdc-0.2

+0.2

+0.4

10
0.1

+0.6

VBE. BASE EMITTER VOLTAGE (VOLTSI

1-738

1.0

10
100
VR. REVERSE VOLTAGE (VOLTS)

850

MJ16002. MJ16004

III

TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 7 - STORAGE TIME

FIGURE 8 - STORAGE TIME

10000

10000

5000

5000
VaElolf); 0 V

~ 2000

IZOOO

:E
~

~ 1000

~

VaElolf) ; 5.0 V

500

-?;.

- i

VaElolf1 ; 2.0 V

-r--

f--

r-

200 c--

r-

===

Ill; 5
TJ ; 75°C
r-- , - VCC;20V
I
100
0.5
07
10
2.0
30
IC. COLLECTOR CURRENT lAMPS)

t:;

I

:ii:
;:::

= :::::t;;

sao oc::::

,--,-...

~

t--- r- Ill; 10

-50V-

r--.....

......
..........

ffi

~ 100

'"

50

-

10
05

-

~

500

~

~

-- ""
"'-.,

r-...

Ill; 5
TJ; 75°C
VCC; 20 V

~

VaElo~) ; 0 V-

50

30

'

ffi

'"
a'"
'"
'"
t;

~

~

8

;#

I

I

10
Z.O
30
IC. COLLECTOR CURRENT lAMPS)

-Z 0 V

-~~ ~
~

-5.0 V

200
100

vaElott) = 0 v

\.

VBElottl ; Z 0 V

f-- l - Ill; 10
TJ; 75°C
20 f-- I f-- I - VCC = 20 V
I

10
0.5

5.0

............

-......,.. -.........:..:

50

07

FIGURE 11 - CROSSOVER TIME

1000

1.0
2.0
IC. COLLECTOR CURRENT lAMPS)

>-

VaElolf); -5.0 V

I I I
0.7

07

FIGURE 10 - COLLECTOR CURRENT FALL TIME

VBEloll1 - 2.0 V

8 20 ;f
~

1

j I I

100
0.5

5.0

20 V

>-

'"
t;

VaElolf) ; 5 0 V I---

TJ; 75°C
f-- I - VCC; 20 V

200 t--- r-

1000

ov

§ 200

VaElott) - 20 V

500

FIGURE 9 - COLLECTOR CURRENT FALL TIME

1000

vaElott); 0 v

1000

I

P

I

VaElott) ; 5.0 V

I I
I
10
2.0
3.0
IC. COLLECTOR CURRENT lAMPS)

~
5.0

FIGURE 12- CROSSOVER TIME

1000

f-- ~ 20V

500

500

~ t;;

200

-50 V

-2.0 V

........
~

:ii:
;:::

'"
>
'"
5'"

ov

ZOO

10~

"

..........

.........

100

~

"-

VaElott) ; 0 V _

:ii:
;:::

,......
~.3.,

OIV

ffi 100

>

'"
..,'"'"

VBElott) ; 0 V-

...............

-I'

........... ~

p.L

.).. ,../

U)
U)

U)
U)

.So

~~

50

VBElott);Z.o,V -C~

r20 r-- rr-- r~

10
0.5

0.7

Ill; 5
TJ ; 75°C
VCC=20V

.So

VaElott) ; 5.0 V-

t--- r- Ill; 10

r-

TJ = 75°C
f-- I - VCC=20V

20 t---

I I I
1.0
2.0
3.0
Ie. COLLECTOR CURRENT lAMPS)

50

5.0

1-739

10
0.5

lL L

0.7

- - . - VBElott) = 2.0 V "I
I VBElott) = 5.0 V •

I

~

I

2.0
3.0
1.0
Ie. COllECTOR CURRENT lAMPS)

5.0

MJ16002, MJ16004

FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS

-

IC~

L

./

-

Ie"""'"

-Isv

VCElpkl_

~

1

IB-

-

10% VCElpkl

~

i'"

-.'\.

.'"'

101 ; 0.6 A

./

w

~~

-,..- -- -- -

'"
'"
w
'"
ffi

'"

-

1.0

~

,....-

./

....v
........ V

V

2.0

~

......-

I

4.0

30

:::0

10% .......
IC pk

90% IBI

'"~

:!.

l",fI~II,-_I,,-

1---. -Ie ---\

---\- --

r--

90% VCEIPkll ,911% IC(pkl

/
VCE

'FIGURE 14 - PEAK REVERSE BASE CURRENT
5.0

~

101; 0.3 A,

:...--:IC;3.0A
TJ; 25°C - J---

,,/

/'
V

o
o

1.0

2,0

3.0

4.0

5.0

6.0

7.0

8.0

VOE(off). REVERSE OASE VOLTAGE (VOLTS)

TIME

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 16 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FIGURE 18 - MAXIMUM REVERSE BIAS
SAFE OPERATING AREA

10

i
!Z

10
101"

5.0

::;;

5. 8.0

2.0

"-

1.0

~ 0.50
i:l

is

TC; 25°C

~

0.02

1m.

iB

6.0

'"
l=

5.0

~

de

0.20

g 0.10
80.05

\
1

~ 9.0

8

-

It

OONDING WIRE LIMIT
- - - - - THERMAL LIMIT
SECOND OREAKDOWN LIMIT

0.01
5.0 7.0

10

20

50

70

j
100

200

300 450

VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0
1.0

TJ';; 100°C _

\

4.0

'" 3.0

Ilf~4 I _

\

7.0

l-

o

o

_ VOE(off) ; 0 V ,/

100

I

J

200

,\ VOE(off) ; 1.0 TO 5.0 V
\ A ( (
\ 1'<..
\
500

700

850

~

I--

I--

1000

VCE(pk). PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)

SAFE OPERATING AREA INFORMATION
the power that can be handled to values less than the
limitations imposed by second breakdown.

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate,
The data of Figure 15 is based on TC: 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated whenTc;;, 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 17.
At high case temperatures, thermal limitations will reduce

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping. RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
$afe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 16
gives the RBSOA characteristics.

1-740

MJ16002, MJ16004

FIGURE 17 - THERMAL RESPONSE

.===

10
01

ReJcl.1 - rl.1 ReJC
ReJC - 1.4°CIW Mix - o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
_
READ TIME AT'I
_

=

OS
0.3

'\

0.2

'I.

-.:

~

0.1

~~D~~S

O-J1Jl ==
=-==

01

o.os

P(tl

O.OS
0.03

002

0.02

001

~~

I I I
01

02

0.3

--

==

DUTY CYCLE. 0 ~ '11'2 - -

SINGLE PULSE
0 OS

j

'2

0.01
0.02 003

-

TJlpkl-TC ~ Plpkl ReJcl.1

., 02_

0.01

0S

20

10

SO

3D

10

I, TIME

SO

3D

20

100

200

300

1111111
SOD

1000

2000

(ms)

FIGURE 18 - POWER DERATING
100

~ t-...

""

..~

l8 0

.

~ 60

r-......
:"-....

Th.rma~
Derating --4iI

z
;::

Second Breakdown
Derillng
-

..... r--.,.,.

......

~

......

'"

..

::; 40
o

r--....

......

~

"

~ 20

o
o

,-

...........

r-......

.........
............

40

120
80
TC. CASE TEMPERATURE lOCI

160

200

TABLE 1 - RESISTIVE LOAD SWITCHING

OV

=-3S][
A

so

IIV

OV ~
.
Vin

~

Vee = 250Vde
RL =B3 0
le= 3.0Ade
I"B= 0.3 Ade

v

OV

~
-5 V

l m 1"
m·

t r .. 15ns

~

·Tektronlx
P-6042 or

Vee = 250
RL = 83 0
le= 3.0Ade

Equivalent

Vee .=

J-

IBI =0.3Ade
RBI =330
IB2 = 0.6 Adc
RB2 = 8.00
For VBE(off) = 5.0 V RB2 = 0 0

'Note: Adjust -V to obtain desired VSE(off) at POint A.

1-741

DI

MJ16002, MJ16004

III

TABLE 2 - INDUCTIVE LOAD SWITCHING

o
=-35lf

A

fF

50

+

1---......- - - - [

500

T1--J

OV~

~IClpkJ

-V

le~

I---+V

-u::-c
-

VeE(PkJ-··h

VeE~

A

T 1 = Leod (lepkJ

"--

50

Vee
T1 adjusted to obtain IClpkJ
BVCEO
L~ 10 mH
RB2 ~ x
Vee~ 20 Volts

Inductive Switching
L~ 200MH
RB2 ~ 0
Vee ~ 20 Volts
RS 1 selected fo'r deSIred 181

"'TektronIx

Scope ~ TektronIx

P-6042 or

7403 or

EqUivalent

EqUivalent

RBSOA
L~ 200MH
RB2 ~ 0
Vee ~ 20 Volts
RS1 selected for deSired IS1

Note' Adjust -V to obtain deSired VBE(offJ at POint A

TYPICAL INDUCTIVE SWITCHING WAVEFORMS
tfi. te

tov
lC(pkJ ~ 3.0 Amps
IB1 ~0.3 Amp
VBE(offJ ~ 5.0 Volts
VCE(pkJ ~ 300 Volts
TC ~ 25°C
Time Base =

20 n'/em
le(pkJ ~ 3.0 Amps
IB1 ~ 0.3 Amp
VBE(offJ ~ 5.0 Volts
VCE(pkJ ~ 300 Volts
TC ~ 25°C

Time Base

20 nslem

, -742

==

L-

®

MJ16002A
MJH16002A
MOTOROLA

..

Designer's Data Sheet
5.0 AMPERE

SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS

NPN SILICON
POWER TRANSISTORS

These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for line-operated switchmode applications.

1000 VOLTS
125 WATTS

Typical Applications:
•

Switching Regulators

•

Solenoid and Relay Drivers

•

Motor Controls

•

Deflection Circuits

MJ16002A

LIF"=t-=fr

• Inverters

t.~K
rn/+o ___

1

Features:
• Fast Turn-Off Times
100 ns Inductive Fall Time - 100°C (Typ)
120 ns Inductive Crossover Time - 100°C (Typ)
500 ns Inductive Storage Time - 100°C (Typ)
•

Operating Temperature Range -65 to +200 oC

•

100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

STYLE'
PIN 1 BASE
2 EMITIER
CASE COLLECTOR

NOTES
! DIMENSIONS a AND v AfiE DATUMS
2 [IJ IS SEATING PLANE AND DATUM

3 POSiTiONAL TIlLERANCEFOR
MOUNTING HOLE 0

1+1'''''005181,1'81
FOR LEADS
1+11131000518'1'81 0 81
·4 DIMENSIONS AND TOLERANCES PER
ANSIY145,1913

MAXIMUM RATINGS
Symbol

Max

Unit

Collector-Emitter Voltage

VCEOlsuSI

500

Vdc

Collector-Emitter Voltage

Rating

VCEV

1000

Vdc

Emitter-Base Voltage

VES

60

Vdc

Collector Current -

IC
ICM

50
10

Adc

18

40
80

Adc

'9M
TJ, TsIg

-6510 +200

Contmuous

Base Current -

Peak 111

Continuous

-Peakl11
OperatIng and Storage Junction
Temperature Range

CASE 1-05
TO-204AA
IFormerly TO-31

MJH16002A

°c

Total Power DISSipation @ TC = 25°C

@Tc

o

1

100°C

Derate above 25°C

STYLE 1
PIN! BASf

2 COLlECTOR
3 EMITHR
4 COLLECTOR

THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Case

Symbol

:=

Unit

14

'25

°C/W

TL

275

275

°C

MaXimum Lead Temperature for Soldering
Purposes 1/8" from Case for 5 Seconds
(1} Pulse Test Pulse WIdth

Max

ROJC

CASE 340-01
TO-218AC
PLASTIC PACKAGE

5 ms, Duty Cycle ~ 10%

Designer's Data for "Worst Case" Conditions
The DeSigner's Data Sheet permits the deSign of most CirCUits entirely from the
informatIon presented LimIt data - representing deVice characteristics boundaries - are
given to faCIlitate "worst case" deSign

1-743

MJ 16002A, MJ H 16002A

-

ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted)

I

Char.nteri.tic

Symbol

Min

VCEOlsus)

500

Typ,

Max

Unit

-

-

Vde

-

0,25
1,5

-

2,5

mAde

-

1,0

mAde

OFF CHARACTERISTICS 11 )
Collector-Emitter Sustaining Voltage lTable 2)
IIC= l00mA.IB=O)
Collector Cutoff Current
IVCEV = 1000 Vde. VBEloff) = 1,5 Vde)
IVCEV = 1000 Vde. VBEloff) = 1,5 Vde. Te = lCOOC)

ICEV

Collector Cutoff Current
IVCE = 850 Vde. RBE = 50 O. TC = 100°C)

ICER

-

Emitter Cutoff Current

lEBO

-

IVEB = 6,0 Vde. IC = 0)

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with Base forward Biased

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS 11)
Collector-Emitter Saturation Voltage

VCElsat)

IIc = 1,5 Ade. IB = 0,2 Ade)
IIc = 3,0 Ade. IB = 0,4 Ade)
IIc = 3,0 Adc. IB = 0,4 Ade. Tc = 100°C)
Base-Emitter Saturation Voltage

VBElsat)

lie = 3,0 Ade. IB = 0,4 Ade)
IIc =3,0 Ade. IB = 0,4 Ade. TC = 1COOC)

Vdc

-

-

1,0
2,5
2,5

-

-

1,5
1,5

5,0

-

-

-

30
100
1000
60
400
130

100
300
3000
300

ns

500
100
120
600
120
160

1600
200
250

Vde

-

DC Current Gain

hFE

IIC =5,0 Ade. VCE = 5,0 Vde

-

DYNAMIC CHARACTERISTICS
Output Capacitance

IVCB = 10 Vde. IE = 0. f test = 1 ,0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load ITeble 1 )
Delay Time
Rise ime
Storage Time

Fail Time
Storage Time
Fail Time

IIc = 3,0 Ade.
Vec = 250 Vdc.
IBI = 0,4 Ade.
PW= 30"s.
Duty Cycle ';2,0%)

IIS2 = 0,8 Ade.
RB2 = 8,0 0)

IVBEloff) = 5,0 Vde)

td
tr
ts
tf
ts
tf

-

tsv
tfi
te
tsv
tfi
te

-

-

-

Inductive Load ITabie 2)
Storage Time

Fail Time
Crossover Time
Storage Time

Fail Time
Crossover Time

lie = 3,0 Ade.
IBI = 0,4 Ade.
VBEloff) = 5,0 Vde.
VCElpk) = 400 Vde)

ITJ = 100°C)

ITJ = 150°C)

(1) Pulse Test PW - 300 "s. Duty Cycle <;2%

1-744

-

-

ns

MJ16002A,MJH16002A

TYPICAL STATIC CHARACTERISTICS
FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN

60

2.0

50

~
'"
~
w
'"
,.'"~

III
TJ - 100°C

z

30

~

~

~ 20

2~

ill

a
'"
'"

;

~

I

10

-55°C

;'"

"-

!'"

~

8

'"
!if
0.2

03

05 07 10
20 30
IC. COLLECTOR CURRENT (AMPS)

50 70 10

!t3

A ,4.0 A 5.0 A

0.5

1\

\

\

0.3

+-'---l>~-+--+--.j~""".bI----'~~-l

L-..l..-..L-r-....-L..:-::::b.L..L...l...l...I...~---!
0.2 0.3
0 5 0 7 10
20 30

1 I.J...LJ
o 1 L...L....Li...L...L
II
o03 0.05 0.07 0.1

FIGURE 4 - BASE-EMITTER VOLTAGE

30

30
20

--

10·

/31

./.

III = 5.0·
TJ = 25°C

10

~ 070

/
""- /31 =5.0·

f.-'"

8010

15

;

./

V

"

~

~

~

=100°C

TJ - 25°C

020

20

~

/31- 10•
TJ

g
'"~

/

10
050

TJ = 25°C

02 _

Is. BASE CURRENT (AMPS)

50

'"~
,.'"
~

I \3.0

0.7

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE

~

A

10

~

r- VCE = 5 0 V

30
01

~

i 2.0

t;

70

50

I ~ I I ~ fT

I I II \
\ Ic = 1.0 A

;§ 050

TJ = 25°C

"-

r--

III =10·

'"

TJ = 100°C

~

'"

I I

!if

02

05

10

20
iC. COLLECTOR CURRENT (AMPS)

030
01

10

50

FIGURE 5 - COLLECTOR CUTOFF REGION

0.5

02

10
20
ie. COLLECTOR CURRENT (AMPS)

5.0

10

FIGURE 6 - CAPACITANCE

10000
If

....~

r--

z

w
~

~

=>
'-'

102

~

./

I

Cib

/

5~

./

./

101 r-- "=75'e
REVERSE

FORV'fARO

r-- 1--25OC
-02

Cob

~ 100

<.$

/

VCE" 250 Vd.-

10-1

-0.4

TJ "'25°C :::

""N-

~ 1000

'"z

100'e

0

I

/

TJ" 150 0 C

F= F12I'e

~

9 100

/
/

10 3

+0.2

+0.4

+0.6

VBE. BASE EMITTER VOLTAGE (VOLTSI

1-745

10
0.1

1.0

10
100
VR. REVERSE VOLTAGE (VOLTSI

850

MJ16002A,MJH16002A

TYPICAL DYNAMIC CHARACTERISTICS
. FIGURE 7 - STORAGE TIME

FIGURE 8 - STORAGE TIME

10000

10000

5000

!

2000

'"~

1000

~

500

::;;

5000
VSE(oH) - a v
c

J.

-

-20V

r--

- 50 V

=f::=::

I-- I-- /31 = 5.0'
TJ = 75°C
200 I-- I-VCC = 20 V
I-- I--

100
05

I

~ 2000

'"~
~
J.

20V

500

r--- I--

/31 = 10'
TJ = 75°C
VCC = 20 V

200 I-- I--

I-- I--

I I

0.7

VSE(olll = a v

1000

10

20

30

100
05

5.0

10

:[ 500

:g

2.0

\1-

'"
:'!. 200

............

g§ 100

13
8

;#

50

20 -

--

'"

..........

. VSE(oHI = 0 V-

'"~

200

i
'"to

=-50
I

TJ = 75°C
I-Vcc = 20 V

10
05

500

'"

-20V

I-- /31 = 5.0'
I--

g

:g
~

........

ffi

~

'"

";;;'

1.0

20

30

~

la~ ~
.........
~

-50 v

20V
TJ = 75°C
VCC = 20 V

20 I-- I--

I-- I--

f= 1= b

~

'"~
0

'"
..,'"IE

-.....

I I I
1.0

07

........

f:= h

30

50

20V

c

........

VSE(oH) = O.V_

:g

'"'"

~ ~~ , /

>

200

-50 V

r~~
OIV
'1'

VSE(oHI = 0 v - -

...................

.......... ~

100

;;rL

~V

.

5l
gJ

50

20V _I::~

I-- 20

20

FIGURE 12 - CROSSOVER TIME

500
~

10~ .........

100

_u

~

IC. COLLECTOR CURRENT (AMPS I

20V

I' a v

200

=56v

1000

500

~

"7

I'

I-- I-- /31 = 10'

FIGURE 11 - CROSSOVER TIME

I

VSE(oHI - 0 v

50

IC. COLLECTOR CURRENT (AMPS I

1000

-......\

'--

10
05

50

20V

100

~

v

I I I

07

50

FIGURE 10 - COLLECTOR CURRENT FALL TIME

.......

50V

0-

'"
13

30

1000

v

OV

::::I

20

IC. COLLECTOR CURRENT (AMPS I

FIGURE 9 - COLLECTOR CURRENT FALL TIME

f= f:=::t;

-

I I I

07

IC. COLLECTOR CURRENT (AMPS)

1000

i5.0 V

/31 = 5.0'
TJ.= 75°C
VCC = 20 V

r--- r--- -

10
0.5

j
0.7

=5.0V-

:3
.;.

20

IJ
1.0

50

2.0

3.0

5.0

r--- fr--- fr--- f-

10
0.5

0.7

/31= 10'
TJ = 75°C
VCC=20V

I I I
10

= 2.0 V .....

I

I

2.0

IC. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPSI

1-746

= 5.0 V

~

I
3.0

5.0

MJ16002A,MJH16002A

FIGURE 14 - PEAK REVERSE BASE CURRENT

FIGURE 13 -INDUCTIVE SWITCHING MEASUREMENTS
5.0

IC~

......- f-""'"
IC""""-

.,/'
I- f--t sv

I

JCEIPkl

"\

90%IBI

-- --\- -- ----......,....

--

--

30

'"""
'"

/' ......- .... ----

20

~

-

--

V

/"

15

10%" ~ ~
2%IC
Ie pk

]:

........-

10

----

V lSI = 0.3 A

,/

'"
'"
8

l-

10% VCElpkl

lSI = 0.6 A

~

I'\.

V
VCE

-

~ 4.0

...
::;

ffl~ Ifi-I-Ili-

IIV

I

in

90% VCElpkl A1\9!1%IClpkl
1----] I---tc~

'B-

I----

Ic=3.0A
TJ = 25°C -

r--

,/

o

o

10

20

40

30

50

60

70

8.0

VSEloHI' REVERSE BASE VOLTAGE IVOLTSI

TIME

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 18 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FIGURE 18 - MAXIMUM REVERSE BIAS
SAFE OPERATING AREA

10

~

5.0

!

2.0

10
10 ~s

~ 9.0

de

t;'"

1=5

~
=>

1.0ms

0.20

9 0.05
0.02

Te = 25°C

-

10

20
50 70 100
200 300
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

~

5. 0
4.0

~

3.0

iE-"- 2.0 ~1.0

SONDING WIRE LIMIT
- - - - - THERMAL LIMIT
- - - SECOND SREAKDOWN LIMIT

0.0 1
5.0 7.0

7.0

8

500

o
o

Ilf;;' 4.0·

TJ';; 1000C-

\
\
\

'-' 6.0

'"

8~ 0.10

\

~ 80

!z

I"'\.

t
1\

I---- VBEloff) = 0 V

/'

"-

~) = liD 10 5., V _

"'-..l
1

100

200
500
700
VCElpk), PEAK COLLECTOR·EMITTER VOLTAGE (VOLTS)

1000

SAFE OPERATING AREA INFORMATION
the power that can be handled to values less than the
limitations imposed by second breakdown.

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 15 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;. 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 17.
At high case temperatures, thermal limitations will reduce

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active damping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 16
gives the RBSOA characteristics.

1-747

MJ16002A,MJH16002A

FIGURE 17 - THERMAL RESPONSE

OJ

10
01

,.

==

R9JCltl = r(tl R9JC
R9JC - 1.4°e/W Max - -

05

-'
0<

... e
"'-

O.l

\.

,.

0.1

....

",,,,
~

....

~-'

zo<
...
.,;",

ze
0<,.

",~

...

~~
~~

u'"
...
.,;
......

::;'"

..,

o CURVES APPLY FOR POWERr-

~ ~~D=05

0.1

DOl

DOl

0.01

001

i.

~~j

01

Ol

01

05

=~

I \I I I I I I II

0.01
0.05

-I=~
-I-l-

DUTY CYCLE. D = 11/11 - I -

SINGLE PULSE
0.01 DOl

TJ(pkl-T C = P(pkl R8JClt)

f-

P(pk)

01
0.05

005

I-

-r-rul

~ 02.

0.01

=

PULSE T~A1N SHOWN
READ TIME AT 11

10

10

lO

50

10

·10

30

50

100

100

300

500

10DD

1000

I, TlMElmsl

FIGURE 18 - POWER DERATING
100

?

~~

,~

80

~

..
.
.,

......z 60

Der.tlng~

,

>=

~ 40

'"
~

Second B"akdown

1"- ...... ........

'l'"
I~}rma~

'"~,

Derating

........

if-....

........

.....

,

"-

I"'--

.I

l',
~

..........

--.j

o

o

...... 1--...
')

,

-MJ16002A
0 - ---MJHI6002A

~ 1

40

-

,-

110
80
TC CASE TEMPERATURE fOCI

"

160

100

+Vde == 11 Vde

TASLE 1 - RESISTIVE LOAD SWITCHING

td and tr

OV
==-35'lf

A

50

Vee = 250Vde
RL = 83!l
Ie = 3.0 Ade
Ie = 0.3 Ade

l1V

~
O~
Vin

tr~15

OV

-5 V

UT

ns

"Tektronix AM503
P8302 or Equivalent

-v

;1

~
v

~

lRL
Vee ..:.

~

Vee = 250

lSI = 0.3 Adc, ReI = 33 n

RL=83n
Ic= 3.0Ade

IS2 0.8 Ade, RS2 8.0 n
For VSE(off) = 5 ..0 V RS2 = 0

=

1

;::::t!l-.

=

J

n

Note: Adjust -V to obtain desired VSE(off) at Point A.

1-748

MJ16002A,MJH16002A

..

TABLE 2 - INDUCTIVE LOAD SWITCHING
o 02pF

20

o

10 pF

-3slf

A

fP'

50

,

,..---1'---[

500

~1C(pk)

-V

IC~

I-,v
OV~ -~
Tl--J

'--

VCE(Pkl-··h

VCE~

A (Or---HJ+---{

T1 ~ Leoll (lCpk)
VCC
T 1 adlusted to obtain lC(pkr
BVCEO(susl
L= 10 mH
RB2 =~
VCC = 20 Volts
IC(pk) = 100 mA

Inductive Switching
Lo 200 pH
RB2 00
VCC = 20 Volts

"Tektronix AM503
P6302 or Equivalent

Scope -

AS 1 selected for desired 161

RBSOA
Lo200pH
RB2 0 0
VCC = 20 Volts
RSl selected for desired IS1

Tektronix

7403 or Equivalent

Note: Adjust -V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS
IC(pk) = 3.0 Amps
IBl =0.3 Amp
VBE(off) = 5.0 Volts
VCE(pk) = 300 Volts
TC = 25°C
Time Base

=

20 ns/em
lC(pkl = 3.0 Amps
ISl = 0.3 Amp
VSE(offl = 5.0 Volts
VCE(pk) = 300 Volts
TC = 25°C
Time Base =
20 ns/em

1-749

'--

MJl6006
MJl6008
MJHl6006
MJHl6008

®

MOTOROLA

Designers Data Sheet
8.0 AMPERE

SWITCHMODE III SERIES
NPN SIUCON POWER TRANSISTORS

NPN SILICON
POWER TRANSISTORS

These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fali time is critical.
They are particularly suited for line-operated switchmode applications. The MJ16008 and MJH16008 are selected high gain versions of the MJ16006 and MJH16006 for applications where drive
current is limited.

450 VOLTS
125 AND 1SO WATTS

Typical Applications: Features:
• Switching
Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
•

L

Deflec:;~~
Circ~

~

J,5t? 4'

• Fast Turn-Off Times
70 ns Inductive Fall TIme -100"C (Typ)
100 ns Inductive Crossover Time -100'C (Typ)
500 ns Inductive Storage Time -100°C (Typ)
• 100'C Performance Specified for:
Reverse-Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

o~.~·. ~i ~m~
•

H

,

•

"

CASE COllECTOR

I

,

u

MAXIMUM RATINGS
Rating

Symbol

MJH16006
MJH16008

MJ16006
MJ16008

Unit

Collector-Emitter Voltage VCEQ(sus)
Collector-Emitter Voltage
VCEV

450

Vdc

850

Vdc

Emitter-Base Voltage

VEB

6.0

Vdc

Collector Current
- Continuous
- Peak (1)

IC
ICM

8.0
16

Base Current
- Continuous
-Peak (1)

IB
IBM

6.0
12

ill

1.1113IO,OO5I@I,lv@1
FOR LEADS

I • 11.13IOO"'@' 1v@1 Q@I
40IMENSIONSANOTOLEAANCESP£A
ANSlY145,1913

Adc

CASE 1-05
Adc

Total Device Dissipation
@TC = 25'C
@TC = l00'C
Derate above 25'C

PD

Operating and Storage
Junction Temperature
Range

TJ,Tstg

Watts
150
85.5
0.86

125
50
1.0

wrc

-65 to 200

-55to 150

'c

THERMAL CHARACTERISTICS
Characteristic

RruC

Lead Temperature for
Soldering Purposes,
118" from Case for
5 Seconds.

Unit

Max

SY!IIbol

Thermal Resistance,
Junction to Case

(11 Pulse rest: Pulse

NOTES
1 DIMENSIONS 0 AND V ARE DATUMS
2
IS SEATING PLANE AND DATUM.
3. POSITIONAL TOLERANCE FOR
MOUNTING HOLED

r-===;;-r-;;;;=-,

1.17

TL

I

1.0

'c!w

TO-204AA
(Form....Y TO-3)

MJH18008
MJH18008

,
1 BAS.
2 COllECTOR
3EMfTTER

'C

275

4 COllECTOR

Width", 5.0 I'S, Duty eyel,e " 10%.

CASE 340-01

DesIgner', DabI for "Wont c..... Conditions

TO-218AC

The Designer's Data Sheet permits the design of most circuits entirely from the information
presented. Limit Curves - representing boundaries on device characteristics - are given to

facilitate "worst cass" deSign.

1-750

MJ16006, MJ16008, MJH16006, MJH·16008

III

MJ16006
MJH16006
ELECTRICAL CHARACTERISTICS ITC ~ 25°C unless otherwise noted)

Characteristic
OFF CHARACTERISTICS 11)
Collector-Emitter Sustaining Voltage ITable 2)
IIC~ 100 mA,ls~ 0)
Collector Cutoff Current
~

S50 Vde, RSE

~

-

-

0.25
1.5

ICER

-

2.5

mAde

IESO

-

-

1.0

mAde

100°C)

Collector Cutoff Current
~

-

ICEV

IVCEV ~ S50 Vde, VSEloff) ~ 1.5 Vdc)
IVCEV ~ S50 Vde, VSEloff) ~ 1.5 Vde, TC
IVCE

450

VCEOlsus)

Vde
mAde

50 0, TC ~ 100°C)

Emitter Cutoff Current

IVES ~ 6.0 Vde, IC ~ 0)
SECOND SREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage

IIc ~ 3.0 Ade, Ie
IIC ~ 5.0 Ade, IS

~

~

VCElsat)

0.4 Ade)
0.66 Ade)

Ilc~ 5.0Ade,ls~0.66Ade, TC~

~

~

0.66 Ade)
0.66 Ade, TC

VSElsat)
~

100°C)

DC Current Gain

IIc

~

-

2.5
3.0
3.0

-

-

1.5
1.5

5.0

-

-

-

50
250
2500
250

ns

-

20
S5
1000
70
500
100

-

700
80
150

1800
200
250

-

BOO

-

80
200

-

100°C)

Base-Emitter Saturation Voltage

IIc ~ 5.0 Ade, IS
IIc ~ 5.0 Ade, IS

Vde

-

hFE

Vde

B.O Ade, VCE ~ 5.0 Vde

DYNAMIC CHARACTERISTICS
Output Capacitance

(VCS

~

10 Vde, IE ~ 0, f test ~ 1.0 kHz)

SWITCHING CHARACTERISTICS
Resistive Load ITable 1 )
Delay Time
Rise Time
Storage Time

Fall Time
Storage Time

Fall Time

IIc~ 5.0 Ade,
VCC ~ 250 Vde,
lSI ~ 0.66 Ade,
PW~ 30!,s,
Duty Cycle <;;2.0%)

IIS2 ~ 1.3 Ade,
RB2 ~ 4.0 0)
IVSEloff) ~ 5.0 Vde)

td
tr
ts
If
ts
If

-

-

Inductive Load (Table 2)
Storage Time

Fall Time
Crossover Time
Slorage Time
Fall Time

IIc~

5.0 Ade,
lSI ~ 0.66 Ade,
VSE(off) ~ 5.0 Vde,
VCE(pk) ~ 400 Vde)

(TJ~

100°C)

ITJ~

150°C)

tsv
tfi
te
Isv
Ifi
Ie

Crossover Time
(1) Pulse Test: PW - 300 ~s. Duty Cycle ~2%.

1-751

-

-

ns

MJ16006,MJ16008,MJH16006,MJH16008

II]

MJ16008
MJH16008

I

ELECTRICAL CHARACTERISTICS (TC = 25·C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

450

-

-

Vdc

-

0.25
1.5
2.5

mAde

-

1.0

mAde

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(IC =100 mA, IB = 0)
Collector Cutoff Current
(VCEV =850 Vdc, VSE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VSE(off) = 1.5 Vdc, TC = l00·C)

ICEV

Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 0, TC = l00·C)

ICER

-

Emitter Cutoff Current

lEBO

-

mAde

(VEB = 6.0 Vdc, IC = 0)
SECONO BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

~ee

Figure 16

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 3.0 Adc, IS = 0.3 Adc)
(lc = 5.0 Adc, IB = 0.5 Adc)
(lc = 5.0 Adc, IB = 0.5 Adc, TC = l000C)

VCE(sat)

Base-Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(lC = 5.0 Adc, IS = 0.5 Adc, TC = l000C)

VBE(sat)

-

-

2.5
3.0
3.0

-

-

1.5
1.5

-

DC Current Gain
(lC = S.O Adc, VCE = 5.0 Vdc

hFE

Vdc

-

7.0

-

Vdc

-

-

20
100
900
70
400
50

50
250
2200
250

ns

500
70
100

1400
150
200

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
Rise Time
Storage Time
Fall Time
Storage Ti me
Fall Time

(lC= 5.0Adc,
VCC = 250 Vdc,
IBl = 0.5 Adc,
M=30"s,
Duty Cycle ":2.0%)

(lB2 = 1.0 Adc,
RB2 =4.00)

(VBE(off) = 5.0 Vdc)

td
tr
ts
tf
tli
tf

-

-

-

Inductive Lead (Table 2)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Tjme

(IC = 5.0 Adc,
IBl = 0.6 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)

tBv
tfi
tc
tsv
tfi

(TJ = l00·C)

(TJ = 150·C)

Ie

(1. Pulse Test: PW - 300 P.s, Duty Cycle :e;;Z%.

1-752

-

-

600

-

-

100
150

-

-

ns

MJ16006.MJ16008.MJH16006.MJH16008

TYPICAL STATIC CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

100

g

50
z
;;:

'"

20

ia

10

'"

5.0

25°C

0.7

r---.-....
...

~
'"
>

~ 0.3
:::;

"-

8

1.0
2.0
5.0
IC. COLLECTOR CURRENT (AMPS)

0.1

20

10

0.1

~

:E

~

'"

t;

~

2.0

1.0

"

111'10
~
TJ' 100°C

~

~ 0.2
0.1
0.1

""
15~

0.5

h

0.5
1.0
2.0
IC. COLLECTOR CURRENT (AMPS)

5.0

0.2
01

10

....z

/

/
I

103

-

w

'"B 10 2

moc

'"c

~

10

~

100

lOooC
75 0 C

1

r-- t-- REVERSE

10K
5.0K

L

./

/

..,. /

I

Z

5

SOO

:

200

<.S

100

5

FORWARD

Cib

'rr 25°C

Cob

r---

20
10

10- 1

-0.2

10

50

I VeE - 25OV=

250 C
-0.4

50

~1.0K

./
../

10

111'10
TJ' 100 D C

0.5
2.0
1.0
IC. COLLECTOR CURRENT (AMPS)

0.2

u: 2.0K

-TJ" 150°C

5.0

FIGURE 6 - CAPACITANCE

FIGURE 6 - COLLECTOR CUTOFF REGION

104
/

II

~
~ 0.3

:Y

....-

TJ' 25°C

........
f-'

""

..-

lii

~ ;..;:

lil_ I---"
0.2

11;)5.01 1
TJ ' 25 D C

1.0

~

TJ ' 25°C

0.5

-

0.5
1.0
2.0
Ia. BASE CURRENT (AMPS)

~ 0.7

/

III 10

8

j

m

~

~ 5.0

!'"

IC' 2.0 A

2.0

Ill' 5.0
TJ - 25°C

4.0 A

........

FIGURE 4 - BASE-EMITTER VOLTAGE

10

""
~

0.2

I'-.....

~OA

1\

0.2

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE

~
~

8.0 A

\

\

:l::

~
0.5

\.

\

""

VCE ' 5.0 V

1.0
0.2

\

0.5

~

2.0

\

~

-55°C

'-'

i

:E

TJ - 100°C

1.0

+0.2

+0.4

0.1 0.2

+0.6

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-753

0.5 1.0

2.0
5.0 10 20
SO 100 200
VR. REVERSE VOLTAGE (VOLTS)

500 850

MJ16006,MJ16008,MJH16006,MJH16008

IIJ

TYPICAL INDUcnVE SWITCHING CHARACTERISTICS
FIGURE 8 - STORAGE TIME

FIGURE 7 - STORAGE TIME

3000

3000
2000 ~

!E

1=
~

1000

~
~

I"--

vaE(olf); 0 V

r----

P::::::-- -

!

2.0 V

5.0 V

!Ji

r-

300
1.0

500

2.0
3.0
5.0
Ie. COLLECTOR CURRENT (AMPS)

--

7.0

300
1.0

10

FIGURE 9 - COLLECTOR CURRENT FALL TIME

400

:! 300 i'..
!!E

0>

1=

:::I 200
;l!

,

I

="-

I

S~ ~

~

300

!Ii!

1=

"'-

-....;

::I 200
;l!

VaE(olf) = 0 V

J
7.0

10

"-

~
8

"-

J#

2.0
3.0
5.0
IC. COLLECTOR CURRENT (AMPS)

~

\; ~ ~ /

~ 100

,

5.0 V

~~

i2
::>

7.0

10

2.0 V

"' .,

7
-fJ!=10'
VaE(olf) = 0 V
70 - T J =75'C
/"
VCE(pk) = 400 V
1
50
40
1.0
2.0
5.0
3.0
IC. COLLECTOR CURRENT (AMPS)

sy """

FIGURE 11 - CROSSOVER TIME

7.0

10

FIGURE 12 - CROSSOVER TIME

500

500

~

!1.., 200

........

i'-..

I

~ .........
"-

'"

......... r-,.

==f3t=5.0·

"-

......,

I'-.. .J.

1

toL

~

~

200

~~

Q

~

)..

r-- TJ = 75'C
r-- VCElpk) = 400 V

2jOV

70

1
5.0

50
1.0

2.0
3.0
IC. COLLECTOR CURRENT (AMPS I

7.0

VaE(olf)=OV

........... ~ i
;ov
li1
~19',~
'; 100 f==f3t= 10'

,/

1

300

~

V

I\.

VaE(olf) = 0 V

~!J = 75'C
70 , - - VCE(pkl = 400 V

50
1.0

"-

'-

li1

'; 100

5.0 V
2.0
3.0
5.0
IC. COLLECTOR CURRENT lAMPS)

ffi

~ r----.(

_2.0V

f--fJ! = 5.0'
;
70 r--TJ = 7S·C
8
r - - VCE(pk) = 400 V
J# 50

~

2.0V

FIGURE 10- COLLECTOR CURRENT FALL TIME

2.0 V

~ 100

300

r--.

400

::>

40
1.0

-.... r----

-

700

400

400

!

,I

VaE(olf) = 0 V

~

1000

~

700 r--fJ!= 5.0'
r--TJ = 75"C
500 r - - VCE(pk) = 400 V

fJ! = 10'
TJ = 75'C
VCE(pk) = 400 V

----

2000

10

1-754

5.0 V

2.0
5.0
3.0
Ie. COLLECTOR CURRENT (AMPS)

I........

.......

"

7.0

10

MJ16006,MJ16008,MJH16006,MJH16008

FIGURE 13 -INDUCTIVE SWITCHING MEASUREMENTS

..,,- ,...,
./

--

IC .........

VCE

18-

-

IC.!'!.---

~E(Pk}

I~

1
90% VCE(pk}

I

-

~

~ ric ---\

r-

V

I,

10% VCElpk}

10" ....
IC pk

90%181

--- -- -- -

~

--

:E

!!. 6.0

90% IC(pk}

l",ffl~II'- _11'-

-I",

---\- --

FIGURE 14 - PEAK REVERSE BASE CURRENT
8.0

i...

lSI; 1.0 A

~

:>

-l"'(C

----

4.0

~
~

'"
~

~

2.0

~

~

---

/'

:i

V. . . . , /
V

a
a

f-'"'"

~

I--

f-'""'ISI ;05A

IC; 5.0 A
TJ ; 25°C -

2.0

4.0

-

6.0

8.0

VSEloffl' REVERSE BASE VOLTAGE IVOlTSI

TIME

+Vde = 11 Vde

TABLE 1 - RESISTIVE LOAD SWITCHING

ov

=-35JJ
A

r::;

50

RB2 _

500

~

Vtn
OV

=I'V

~

Vee; 250Vdc
RL; son
Ie; 5.0 Adc
IB; 0.5 Ade

-V

':'
v

OV

~

-5 V

tr~15ns

l
.

-=

-Tektronix
AM503
P6302 or
Equivalent

Vee; 250
RL; 50n
le= 5.0 Adc

1
lRl

UT~

~

Vee.=..

IB1 = 0.5 Adc, RB' = 20 n
IB2 = 1.0 Adc, RB2 = 4.0 n
For VBEloff) = 5.0 V RB2 = 0

Jn

Note: Adjust -V to obtain destred VBE(offl at Potnt A.

1-755

MJ16006,MJ16008,MJH16006 i MJH16008

III

TABLE 2 - INDUCTIVE LOAD SWITCHING
002

~F

20

o

10

. =-35lf

~F

A

I~P'

50

+

I---......- - - {

500

-V

~lelPkl

le~

'--

~kl
A

VeE~

(<>l>---fei--{

L-

T 1 = Lcolillepki
Vee
T 1 adjusted to obtain IClpkl

VIBRJCEOlsusl
L = 10 mH
RS2 = ""

Vce = 20 Volts
IC(pkl = 100 mA
·Tektronix
AM503
P6302 or

Equivalent

RBSOA

Indut;:tive Switching
L~200~H

L~200~H

RB2 ~ 0
Vee ~ 20 Volts

RB2 ~ 0
Vee ~ 20 Volts
RSl selected for deSired IS1

AS1

se'ect~d

for deSired 'Sl

Scope - Tektronix

7403 or
Note Adjust -V to obtain deSired VSEloffl at POint A

EqUivalent

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling abilduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ity of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC - VCE limits of the transistor that must be observed
REVERSE BIAS
for reliable operation; i.e., the transistor must not be
For inductive loads, high voltage and high current
subjected to greater dissipation than the curves. indimust be sustained simultaneously during turn-off, in
cate.
.
most cases, with the base-to-emitter junction reverse
biased. Under these conditions the collector voltage
The data of Figure 15 and 15A are based on TC =
must be held to a safe level at or below a specific value
25°C; TJ(pk) is variable depending on power level. Second breakdqwn pulse limits are valid for duty cycles to
of collector current. This can be accomplished by sev10% but must be derated when TC .. 25°C. Second
eral means such as active clamping, RC snubbing, load
breakdown limitations do not derate the same as therline shaping, etc. The safe level for these devices is
mal limitations. Allowable current at the voltages
specified as Reverse Bias Safe Operating Area and repshown on Figure 15 and 15A may be found at any case
resents the voltage-current condition allowable during
temperature by using the appropriate curve on Figure
reverse biased turn-off. This rating is verified under
clamped conditions so that the device is never subjected
17.
TJ(pk) may be calculated from the data in Figure 18.
to an avalanche mode. Figure 16 gives the RBSOA charAt high case temperatures, thermal limitations will reacteristics.

1-756

MJ16006,MJ16008,MJH16006,MJH16008

III

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 15 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA. MJ16006 " MJ16006

FIGURE 15A - SAFE OPERATING AREA.
MJH16006 " MJH16008

16~~~~~~~~~~~~~

1°11l1l!!1!~!!~1I~~~~!!10~~!'~1

I_

~ S.O

~

!2

2.0

!z

1.0 ms

aI

1.0~1"~~!'M"II~~!I~1

a
I'"ti

~

'-~rTC' 25°C -f--r- de

0,5

10 !LS

5,0
3,0
2.0

0.50

-

SECOND BREAKDOWN LIMIT

5.0 7.0

10

FIGURE 16 - MAXIMUM REVERSE BIAS
SAFE OPERATING AREA

TJ';; 100°C -

\

,

~~

~80

r--

,,~

'"

~
~

r-- f- VBEI.If) ,

I

o
o

0 V/

I

I

i

r--

-r--o

~

SECOND BREAKDOWN DERATING

K"'" ........

'~ ~

50

THERMAL DERATING" ,

'"

VBEI.If) , 1,0 TO 5,0 V

500

~~

z
!;i

1\ j I
\ I--l

20 30
50 70 100
200 300
VCE. COLLECTOR - EMITTER VOLTAGE (VOLTS)

FIGURE 17 - POWER DERATING
100

Ill;;' 4,0

BONDING WIRE LIMIT

~E- - - - THERMAL LIMIT

0.05
0.03
0.02

SECONO BREAKDOWN LIMIT

\
\

~

de

~ 0.20
o
~0.10

0,02 ~...I...Ju...L_-,--,-_~~.......~.u..L--'--L_~-=U
5,0
10
20
50
100
200 300 450
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)

16

"

tOms

I"

1.0

t; 0.30

~ 0,2 ~titt=:t=t=:t:::tt:tt~~=t=+==I=tj
~ 0,1 ~O'- _-__ ~~~~:.! ~=~ LIMIT
0,05

20
10

,

40
- - - MJHl6006. MJHl5008
20 1 - - - MJl5006. MJl500B

.... ...... i"'---

"" ,

........

~

,,

o

1000

..........

!'
I

\l

o

200
400
600
800 850
VCElpk). PEAK COLLECTOR· EMITTER VOLTAGE IVOLTS)

. . . r--..
l
N

80
120
Te. CASE TEMPERATURE lOCI

40

"'-

160

"

200

FIGURE 18 - THERMAL RESPONSE
1.0

;.
~_

wO

:w
~!::l!

I-~

o. 1~O.05
O. 31== 0.2

~i o. 2
ZO

«z

r--

~ ~O.o

-

01

~: 0 IF=:005
~ ~ 0.0 1~o.o2
§~ 0.05
~'"
3~ AC
~

R'Je(11 • r(11 R'JC

o. 5

R9JC(t) '" 1 17 aCfW MoIX

-.

-_.... ....

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AlII
TJ(pkl - TC' P(pkl R9JCItI

pBUl

0.01

t~..J

0.0 2e-- SINGLE PULSE
0.0 1
0.01

I II
0.02 0.03

DUTY CYCLE. 0·111'2
0.05

01

02

0.3

0.5

1.0

2.0

3.0

t. TIME (ms)

1-757

5.0

10

20

30

50

100

200

300

SOD

1000

MJl6006A
MJHl6006A

III

®

MOTOROLA

Designer's Data Sheet
8.0 AMPERE

NPN SILICON
POWER TRANSISTORS

1.0 kV SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS

SOO VOLTS
125 and 150 WATTS

These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical.
They are particularly suited for line-operated switchmode applications.

MJ16006A

Typical Applications:

Features:

• Switching
Regulators

• Collector-Emitter Voltage VCEX = 1000 Vdc
• Fast Turn·Off Times
80 ns Inductive Fall Time - 100"C (Typl
120 ns Inductive Crossover Time-l00'C (Typ)
800 ns Inductive Storage Time -1 OO'C (Typ)

•
•
•
•

Inverters
Solenoids
Relay Drivers
Motor Controls

• 100'C Performance Specified for:
Reverse-Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage currents

• Deflection
Circuits

STYLE 1

PIN 1. BASE
2

EMITTER

CASE COLLECTOR
NOTES
1 QIMENSIDNSOANOVAREDATUMS
2
IS SEATING PLANE AND DATUM
3 I'OSITIONAL TOLERANCE FOR
MOUNTING HOLEO

OJ

!+!'13(0005)eIT!v@1
FORLEAOS

j+!'13(0005)@T!V@!O@!
4DIMENSIONSANOTOLERANCESPER
ANSIYI45,lB73

MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage
Collector-Emitter Voltage

VCEO(sus)

500

Vdc

VCEV

1000

Vdc

Emitter-Base Voltage

VEB

6.0

Vdc

Collector Current -

IC
ICM

8.0
16

Adc

IB
IBM

6.0
12

Adc

Base Current -

Continuous
Peak (1)

Continuous
Peak (1)

Total Power Dissipation @ TC
@TC
Derate above TC = 25'C

= 25'C
= 100'C

Operating and Storage Junction
Temperature Range

Po

TJ,Tstg

150
85
0.86

125
50
1.0

Watts

-65 to 200

-55to 150

'c

Thermal Resistance, Junction to Case

,

j --lil--J
HISymbol
R6JC

Lead TemperaturQ for Soldering
Purposes: 1/8" from Case for
5 Seconds
(1) Pulsa Tost: Pulsa Width

MJH16006A

WI'C

THERMAL CHARACTERISTICS
Characteristic

CASE 1-05
TO-204M
(Formerly TO-3)

MJ16006A MJH16006A Unit

= 5.0 ml, Duty Cycle'"

Max
1.17

TL

I

Unit
1.0

275

'cm

STYLE'
PINl BASE

2 COLLECTOR
3 EMlmR
4 COllECTOR

'C

to%.

Deoigner'o o.ta for "Worot caM" Conditions
The Designer'. Data Sheet permits the design of most circuits entirely from the information
preaentad. Limit Curves - representing boundaries on device characteristics - are given to

facilitate "worst ca.... daaign.

1-758

CASE 340-01
TO-21BAC

MJ16006A,MJH16006A

I

ELECTRICAL CHARACTERISTICS

(TC

= 25"C unless otherwise

noted)

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

500

-

-

Vde

-

-

0.25
1.5

ICER

-

-

2.5

mAde

lEBO

-

-

1.0

mAde

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 2)
(lC = 100 mA. IS = 0)
Collector Cutoff Current
(VCEV = 1000 Vde, VSE(off)
(VCEV = 1000 Vde, VSE(off)
Collector Cutoff Current
(VCE = 1000 Vde, RSE

=

=
=

ICEV
1.5 Vde)
1.5 Vde, TC

50 fl, TC

=

=

100'C)

100'C)

Emitter Cutoff Current
(VES = 6.0 Vde, IC = 0)

mAde

SECOND BREAKDOWN
Second Sreakdown Collector Current with Base Forward Biased

See Figures 14 or 15

Clamped Inductive SOA with Base Reverse Siased

See Figure 16

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(lC = 3.0 Ade, IS = 0.6 Ade)
(lC = 5.0 Ade, IB = 1.0 Ade)
(lC = 5.0 Ade, IS = 1.0 Ade, TC = 100'C)

VCE(sat)

Sase-Emitter Saturation Voltage
(lC = 5.0 Ade, IB = 1.0 Ade)
(lC = 5.0 Ade, IS = 1.0 Ade, TC = 100'C)

VSE(sat)

DC Current Gain
(lC = 8.0 Ade, VCE = 5.0 Vde)

-

-

-

-

-

Vde
1.0
1.5
1.5
Vde
1.5
1.5

-

-

25

100

ns

400

700

hFE

5.0

Id

-

Ir

-

ts

1400

3000

175

400

ts

-

If

-

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE

=

0, ftesl

=

1.0 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)

MJ16oo6A

Delay Time
Rise Time
Storage Time
Fall Time
Storage Time

(lC = 5.0 Ade,
VCC = 250 Vde,
IBI = 0.66 Ade,
PW = 30j.tS,
Duty Cycle", 2.0%)

(lB2 = 1.3 Ade,
RS2 = 4.00)

tf
(VBE(off) = 5.0 Vde)

Fall Time
Inductive Load (Table 2)

Crossover TIme

Storage Time
Fall Time

-

800

2000

80

200
300

MJ16006A

Storage Time
Fall Time

100

475

If;

-

tsv
(lC = 5.0 Adc,
IBI = 0.66 Ade,
VSE(off) = 5.0 Vde,
VCE(pk) = 400 Vdc)

(TJ = 100'C)

(TJ = 150'C)

Crossover Time
111 Pul •• Test: PW - 300 "'", Duty Cycl. '" 2.0%.

1-759

te

-

120

Isv

-

1000

tfi

-

90

te

-

150

-

-

ns

MJ16006A,MJH16006A

TYPICAL STATIC CHARACTERISTICS

FIGURE 1 -

DC CURRENT GAIN

FIGURE 2 - COLLECTOR-EMITTER SATURAnoN VOLTAGE
10

100

g

50

iz
Ie

-

30 TJ = 100°C
20

'"
~!i

.

25°C

~

10

=>
u
u

~
~

3.0

~

2.0

Idla - 10
TJ = 25·C

~

1.0

/

~
13

0.5

~

0.3

8

0.2

~

~ ::::,..

5.0

~

~ CI

5.0 -55°C
3.0

i

2.0
1.0
. 0.2

0.3

0.5

1.0
2.0 3.0
5.0
IC. COLLECTOR CURRENT (AMPS)

10

5.0

0.1
0.1

20

FIGURE 4 -

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE

~

;;;

\

~
w

1\

0.5

i\

~

g

0.3

~

13

0.2

~

"-

8

w

$'

0.3

-

0.5
1.0
2.0 3.0
IC. COLLECTOR CURRENT (AMPS)

5.0

10

BASE-EMITTER SATURATION VOLTAGE

2.0

1.0

~

0.2

V

O. 1
0.1

I

8.011\

r-.

'"

5.0 A......

1.5
1.0

~

'\

3.0 A

1.0~

~
c:>
~
w

.1
t--- =TJ

t--- -Idla

'"

~

I'--

~
~

0.3

~

I'-

"

~

0.5

10
'-Idla
TJ - 100·C

0.2

0.2 0.3 0.5
1.0
2.0 3.0
la. aASE CURRENT (AMPS)

5.0

10

0.2 0.3 0.5
1.0
2.0 3.0
Ie. COLLECTOR CURRENT (AMPS)

FIGURE 6 -

FIGURE 5 - CAPACITANCE

5.0

10

PEAK REVERSE BASE CURRENT

8.0

10000
• Cib'

~

":!......
:;

TJ '25°C

~1000

6.0
lal = 1.0 A

......- ro-ro-

lI!

u

~

a
w

..
~

: C,

'"

4.0

~

C5 100

<.i

~

10
0.1

10
2S·C

t---

c:>

1.0

10
100
Vft. REVERSE VOLTAGE (VOLTS)

850

2.0

.---

~

// V

---0.5 A

IC=5.0A,_
>--TJ = 25°C

,/

o
o

2.0

4.0

6.0

VaE(ofl). REVERSE aASE VOLTAGE (VOLTS)

1-760

8.0

MJ16006A,MJH16006A

TABLE 1 -

III

RESISTIVE LOAD SWITCHING

leland t.
OV

=-35JI
A
50

50

v

OV

;Jt

~
-5 V

_ll V

Von

o~

tr~15 n5

"Tektronix

AM503
P6302 or Equivalent

250 V

Vee

250 V

Vee

RL

50n

RL

50 n

Ie

5.0 A

Ie

5.0 A

IB

0.66 A

IB1

0.66 A

IB2

1.0 A

RB1

20 n

RB2

4.0n

*Note: Adjust - V to obtain desired VSE(off) at
Point A.

For VBE(off)

FIGURE 7 -

INDUCTIVE SWITCHING MEASUREMENTS
IC Pk. . - -

~
../

I

./
le/

~CEIPkl I----

1\

90% VCEIPkll

90% IC(pkl

,,,/1+,,- -',,-

I - f--Isv

1---, -"-\ f-

V
Vel
IS-

-

-

10% VCElpkl
"

90% lSI

--\- --

--

-- --

.- ~
~
TIME

1-761

10'"0 ..... 1--12~u Ie
IC pk

~

5.0 V. RB2

~

0

MJ16006A,MJH16006A

III

TABLE 2 -

INDUCTIVE LOAD SWITCHING

o

~-351J

......---4~)A

fP'

50

50

'r--......- - - L

+

500

-v

~IC(pkl

IC~

I--,v
Ov~
-~
Tl--l

A

T, =

'--

~kl

,

VCE~

(ojl----fffi--r

'.,

'--

leoil (lepk)
Vee

T, adjusted to obtain le(pk)
RBSOA
L=750",H
RB2 = 0
Vee = 20 Volts
RBI selected for desired IBI

Inductive Switching
'L=750",H
RB2 = 0
Vee = 20 Volts
RBI selected for desired IBI

BVCEO
L = 10 mH
RB2 = ""
Vee = 20 Volts

Note: Adjust ... V to obtain desired VBE(off) at Point A

Scope - Tektronix
7403 or
Equivalent

*Tektronix AM503
P6302 or Equivalent

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
IcJIB1

3000
2000

!
~••

1000

--

= 5.0, Te = 100'C, VCE(pk) = 400 V
FIGURE 8 -

FIGURE 9 -

STORAGE TIME

2000
_

!Ill
~

2,0 V

1000

~

-

700

500

500

400

400

300

300

2,0

3,0

5,0

),0

10

,I

1.0

1

VBE(oH) = 0 V

...........

~--

-

~

5,OV

700

STORAGE TIME

3000

-

VBE(offl = 0 V

F===:::: f:::-

1.0

= 10, TC = 100'C, VCE(pk) = 400 V

icJIB1

-

2,0 V

:---

I--5,0 V
1

2,0

3,0

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

1-762

I"--- ........

5,0

7,0

10

MJ16006A,MJH16006A

III

GUARANTEED SAFE OPERATING AREA UMrTS (Continued)

RGURE 16 - MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

FIGURE 17 - POWER DERATING

20

100

~ 16
....
z
~
13 12

~ 80
l§

~ :;;:..,

ie

::E

'"

~

13

:::

VBEloft) = 0 .....

II

80

,.S

<

1

~

.\

r-

i

o

100

\

VBEloff)

~

300

400

~

""

......... ~

I

200

500

60

'"

'(

600

700

800

~

- r-

SECOND BREAKDOWN DERATING

."-''< r-.....
"'v ~ ' ....
THERMAL DERATING P" "'
, f'..

z

5.0 v

~~

~ 40

\
\

I.

40 -IC/IB"'4.0
_
TJ",l00"C

§

~

1\'

,~

"',,

---MJH1600SA
20 - - - MJl600SA

..........

",

"1
f'
I

\i

o

80
120
TC. CASE TEMPERATURE 1°C)

40

VCElpk). PEAK COLLECTOR· TO·EMlffiR VOLTAGE IVOLTS)

..........

~

,

o

900 1000 1100

r--....

........

160

" "'"

200

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC - VCE limits of the transistor that must be observed
for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves
indicate.
The data of Figures 14 and 15 are based on TC ~
25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC '" 25°C. Second
breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages
shown on Figures 14 and 15 may be found at any case
temperature by using the appropriate curve on Figure

duce the power that can be handled to values less than
the limitations imposed by second breakdown.

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base-to-emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value
of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load
line shaping, etc. The safe level for these devices is
specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable putting
reverse biased turn-off. This rating is verified under
clamped conditions so that the device is never subjected
to an avalanche mode. Figure 16 gives the RBSOA characteristics.

17.
TJ(pk) may be calculated from the data in Figure 18.
At high case temperatures, thermal limitations will re-

FIGURE 18 - THERMAL RESPONSE
MJ16006A
1.0

;(

=_
~o

:z:~

.... N
....

::;

0.7 ~D~05
05
03

ffi~ 02

.,0
«.,

in'"

~

01

f--

01

~

::: o. IF=.005

-

...
".

Rruclt)
rlt) RruC
1.17 or 1.O"CIW Max
RruC
oCurves apply for power
Pulse train shown
Read time at tl
P(pk) R8Jctt)
TJ(pk) Te

-

pBUl

~ ~oo 7~002

§ ~ 0.05
~'"

~ ~O.03

_

.-K

t:;--J

001

0.02 r - SINGLE PULSE
0.0 1
001

I II

002 003

DUTY CYCLE. D ~ 1]/11
DOS

01

01

03

05

10

2.0

3.0

I, TIME

(ms)

1 -763

50

10

20

30

50

100

200

300

SOO

1000

MJ16006A,MJH16006A

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS (Continued)

= 5.0. TC = 100'C. VCElpk) = 400 V

lelIB1

--

FIGURE 10 -

400

:! 300

r---..-

~

>=

::j

~

0>

200

I(:IIB1

RGURE 11 -

COLLECTOR CURRENT FALL TIME
2.0 Y

............

~ 300

~ 100

:::: 200

YaEloH)

~ . . . . .l(

2.0 Y

~
B

1--fJ! 5.0'
70 r--TJ = 75"C
r - - VCElpk) = 400 V
if' 50
2.0

~

;:::

"--

~

:::>

40
1.0

COLLECTOR CURRENT FALL TIME

400

'--.. 5~ 0-

!z
!i§

= 10. TC = 10O'C. VCElpk) = 400 V

........
5.0 Y

3.0

5.0

~ :::::::-...

.......

~

=0 Y

OY

:::>

~ 100

~::::

,

7.0

-fJ! 10'
70 - T J = 75'C ~ YaEloH) = 0 Y
/
VCElpk) = 400 V
I
:- 50
5y

.....

.

" .......

B

40
1.0

10

20

IC. COLLECTOR CURRENT lAMPS)

RGURE 12 -

~

V
~~
,~

!z
!i§

30

"

7.0

5.0

10

lC. COLLECTOR CURRENT lAMPS)

CROSSOVER TIME

FIGURE 13 -

CROSSOVER TIME.

500

500

.........

...............

............

r--....
............

1'-............

"- "-

"

,

'"to

YaE(oH)

'"

Y
I

70

lot

~

i'-.. ~
r\.

~

300
200

ffi

,/

c>
~

~v

f\.

I

YaE(oH) = 0 v

"'D",~

lil

~ 100

yY

?

/
2.0 Y

3.0
5.0
IC. COLLECTOR CURRENT (AMPS)
2.0

7.0

50
1.0

10

............
....... .......

5.0 V

70

I

50
1.0

~ .........
~ i

2.0

3.0

"

5.0

10

7.0

IC. COLLECTOR CURRiNT (AMPS)

GUARANTEED SAFE OPERATING AREA LIMITS
MJH16OO6A

MJ16006A
FIGURE 14 20
16
10

en
~_

ia
'"

0.5

~

0.3
0.2

~

-

RGURE 15 -

r,TC = 25°C

10):;' EO

~:

1.0 ms I--

a

1.0

"-

I~:

.....

-

~ 5. 0
0
!z 0

g§

'\.

0.1 ~.-Bonding Wire Limit

~

0.05 F---lbarmal Limit
0.03
eond
I.....
0.02
5.0
10
20 30
50
100
200 300 500
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)

~I) ))sr

...

0

1.0 ms
de

MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

0
101LS~

'2.0
1.0

8

. .

5.0
3.0

_

ti

MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

)Bra~downl

1·764

de

5

3
2

o. 1

0.05

f-TC

25'C

.......

-

Bonding Wi,. Limit
- - - - - Thenmal Limit
Second B,.akdown

0.03
2
0.0 7.0

10

20
30
50 70 100
200
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

.......
300

500

®

MJ16010
MJ16012
MJH16010
MJH16012

MOTOROLA

l1li

Designer's Data Sheet
15 AMPERE

SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS

NPN SILICON
POWER TRANSISTORS

These transistors are designed for high-voltage, high-speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switch mode applications. The MJ16012
and MJH16012 are selected high gain versions of the MJ16010 and
MJH16010 for applications where drive current is limited.
Typical Applications:

Features:

•

•

Switching
Regulators

• Inverters
•
•

Solenoids
Relay Drivers

•
•

Motor Controls
Deflection
Circuits

:J•

Fast Turn-Off Times - TC = lOooC
50 ns Inductive Fall Time (Typ)
90 ns Inductive Crossover Time (Typ)
800 ns Inductive Storage Time (Typ)
lOooC Performance Spec.ified for: .
Reverse-B,ased SOA w,th Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

450 VOLTS
135 AND 175 WATTS

J-~-f :~~:~~~
~~

@

' v O

Q

~~,~

0

•
'.
H,'

•

lASE
t EMITTE'
CASE COLLECTOR

R

,

G

u

MAXIMUM RATINGS

Rating

Symbol

Collector-Emitter Voltage
Collector-Emitter Voltage

MJ16010
MJ16012

MJH16010
MJH16012

NOTES,
1. DIMENSIONS QAND V ARE DATUMS.
2.
IS SEATING PLANE AND DATUM.

Unit

VCEO(sus)

450

Vdc
Vdc

VCEV

850

Emitter-Base Voltage

VEB

6.0

Vdc

Collector Current - Continuous

'C
'CM

15
20

Adc

'B
IBM

10
15

Adc

- Peak (1)
Base Current -

Continuous

- Peak (1)
Total Device Dissipation

Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ, Tstg

3. MOUNT/NG
POSITIONALHOLE
TOLERANCE
FOR
Q'

Itll.",...,,,@lrlv@1
FOR LEADS
I t 11."" ...,@r Iv9>1 Q@I
4. DIMENSIONS AND TOLERANCES PER

AttISIYI4.5,1913.

CASE 1-05
TO-204AA
(Formerlv TO-3)

Watts

Po

@TC" 25°C
@TC" 100°C

rn

~~~m~~~~

175
100
1.0

135
53.8
1.11

W/oC

-65 to 200

-55 to 150

°C

0.93

°C/W

MJH16010
MJH16012

,

THERMAL CHARACTERISTICS
Symbol

Characteristic
Thermal Resistance, Junction
to Case
Lead Temperature for Soldering
Purposes. 1/8" from Case for
5 Seconds
(1) Pulse Test.

Pu~se

Width

R8JC
TL

Max
1.0

Unit

I

, ....

°c

275

.••,.

e;; 5.0 ~s, Duty Cycle ~ 10%

I

Designer's Data for "Worst Case" Conditions
The Designer's Data Sheet permits the design of most cirCUits entirely from the infor·
mation presented. Limit curves - representing boundaries on device characteristics are given to facilitate "worst case" design.

1-765

,

IIIWM

.

M'•

2032 "01 .100
IS .. 11810 0828
IS
0115 ..DO
0.085
'02
0053
52' 572 0205 0225
32
.84 0015 0025
210 1541 0500 0810
1851
825
1210

•• " •'"
".
,• '".31'"
15.
• '"•
C

L

......"

2COlUCTOR
3 EMITTER
4C01.LECTOII

422

.... .08.
... "28

.

..... ....
" ""

CASE 340·01
TO·218AC

MJ16010,MJ16012,MJH16010,MJH16012

IIJ

MJ16010
MJH16010

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

VCEO(sus)

450

-

-

-

0.25
1.5
2.5

mAde

1.0

mAde

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(lC= 100 mA, IB = 0)

mAde

Collector Cutoff Current
(Vcev = 850 Vde, VBE(off) = 1.5 Vde)
(VCEV = 850 Vde, VaE(off) = 1.5 Vde, TC = lOO°e)

ICEV

Collector Cutoff Current
(Vce = 850 Vde, RaE = 50

ICER

-

-

leaD

-

-

n, TC = 100°C)

Emitter Cutoff Current
(Vea = 6.0 Vde, IC = 0)

Vde

SECOND BREAKDOWN
Second Breakdown Collector Current with Sase Forward Biased

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS (1)
Coliector~Emitter

Saturation Voltage

Vde

VCE(sat)

-

-

2.5
3.0
3.0

-

-

1.5
1.5

hFE

5.0

-

-

-

td
Ir
ts
tf
ts
tf

-

-

ns

(IC = 5.0 Ade, IB = 0.7 Ade)
(IC = 10 Ade, la = 1.3 Ade)
(lC = 10 Ade, la = 1.3 Ade, TC = lOO°C)

-

Base-Emitter Saturation Voltage
(lC = 10 Ade, la = 1.3 Ade)
(lC = 10 Ade, la = 1.3 Ade, TC = lOOOC)

VaE(sat)

DC Current Gain
(lC = 15 Ade, VCE = 5.0 Vde)

Vde

-

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB = 10 Vde, Ie = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Slorage Time
Fall Time
Storage Time
Fall Time

(IC = 10 Ade,
VCC = 250 Vde,
lal = 1.3 Ade,
PW= 30 ~s,
Duty Cycle .. 2.0%)

(la2 = 2.6 Ade,
Ra = 1.60)

(VaE(off) = 5.0 Vde)

-

20
200
1200
200
650
80

-

800

1800

l)U

ZOO

90
1050
70
120

250

-

-

-

-

Inductive Load (Table 2)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time

(IC= 10 Adc,
lal = 1.3 Adc,
VBE(off) = 5.0 Vdc,

(TC= 100°C)

tsv
tfi
te

VCE(pk) = 400 Vde)

ITC= 150°C)

Isv
tfl
tc

(11 Pulse Test: Pulse Width

=300 ,us, Duty Cycle ~ 2 0%

1-766

-

-

-

-

ns

MJ16010,MJ16012,MJH16010,MJH16012

III

MJ16012
MJH16012

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

450

-

-

Vde

-

0.25
1.5
2.5

mAde

-

1.0

mAde

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = 850 Vde, V8E(ofl) = 1.5 Vde)
(VCEV = 850 Vde, VBE(ofl) = 1.5 Vde, TC = 100°C)

ICEV

Collector Cutofl Currenl
(VCE = 850 Vde, RBE = 50 fi, TC = l000 q

ICER

-

Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)

lEBO

-

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward BIased

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS (1)
Collector~Emitter

Saturation Voltage

VCE(sat)

IIC = 5.0 Ade, IS = 0.5 Ade)
IIC = 10 Ade, IS = 1.0 Ade)
(IC = 10 Ade,ls = 1.0 Ade, TC = 100°C)
Base~Emitter

Saturation Voltage
(IC = 10 Ade, IB = 1.0 Ade)
(IC = 10 Ade, IS = 1.0 Ade, TC = 100°C)

Vde

-

-

2.5
3.0
3.0

-

-

1.5
1.5

-

-

-

n.

-

Vde

VSE(sal)

DC Current Gain
(IC = 15 Ade, VCE = 5 a Vdc)

hFE

7.0

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time

(IC = 10 Ade,
Vee = 250 Vde,
IBl = 1.0 Ade,
PW= 30,,5,
Duty Cycle ';;;2.0%)

IIS2 = 2.0 Ade,
RB = 1.6 fi)

(VSE(off) = 5.0 Vde)

td
tr
ts
If
Is
tf

-

20
200
900
150
500
40

tsv
tfi
Ie

-

650

Inductive load (Table 21
Storage Time
Fall Time
Crossover Time
Storage Time

(Ie = 10 Ade,
IBl = 1.0 Ade,

Fall Time
Crossover Time

VeE(pkl = 400 Vdel

(Te= 100°C)

VBE(ofil = 5.0 Vde,

(11 Pulse Test- Pulse Width

'sv
If,

(Te= 1500 CI

'e

=300 pS, Duty Cycle ~ 2.0%.

1-767

30
50
850
3U

70

1500
150
200

n.

MJ16010,MJ16012,MJH16010,MJH16012

TYPICAL STATIC CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

2.0
50

~

20

~ 0.5

10 A

~

U

u

co 10

:!l

'"

0.3

!;i

It

VCE

3.0
0.2

0.5

"

=5.0 V

10
20
5.0
IC. COLLECTOR CURRENT (AMPS)

10

I
0.02

20

:IE

!
C)

~

ill = 10

in
~

10

c

~

~

1.0

::; 0.30

0.05

15

3.0
2.0

0.50

,~

tl

~

;: 050

-

ill
TC ==10
25°C

~

Y

:;;

1--"/'"

0.20

~O.07

0.05
0.150.2

0.3

0.5

TC = 25°C

i LU

0 1 0.2
0.5
1.0 2.0
Ie. BASE CURRENT (AMPS)

5.0

10

--

TC

10

15

I

25°C

75°C

f-toooc

- --

0.40

~ 030

_ V "'-

0.10

-

070

c

ill -10
TC = 100°C

II

"

FIGURE 4 - BASE-EMITTER VOLTAGE

5.0

ffi 0.70

II

I

0.1

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE

!:

5.0 A

IC = 1.0 A

~ 0.2

5.0

~g

III

~ 0.7

'"::0

I

1

i5

I"'-

~

1\

ii 1.0

r--."

II

1\

g

25°C

'"z
....

\

~

r--- TC ~ I~OJC

ill-S.O
TC - 25°C

0.7 1.0
2.0 30
5.070
IC. COLLECTOR CURRENT (AMPS)

~

10

~
~020
015
0150.2

15

0.3

0.5 0.7 10
2.0 30
50 70
IC. COLLECTOR CURRENT (AMPSI

FIGURE 6 - COLLECTOR CUTOFF REGION

FIGURE 6 - CAPACITANCE

10000
I
/

t-- I-- TJ = 150°C
125°C

V
./

t-- r- REVERSE

~

/

~

z

5
:

/

100°C
75°C

1

/

5000
3000
2000

I

5

FORWARD

I

<.S

+-

1000
500
300
200

~

100

Cob

TC = 25°C

50

/VCE=250V=

25°C
10-1
-0.4

Cib

20
10

-0.2

+0.2

+0.4

+0.6

0.1

VBE. BASE·EMlmR VOLTAGE (VOLTS)

1-768

0.3 0.5 1.0 2 0
SO 10 20 30 50100
VR. REVERSE VOLTAGE (VOLTSI

I

300 500 850

MJ16010,MJ16012,MJH16010,MJH16012

TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 7 - STORAGE TIME

--

5000
3000
2000

vaElolf)- 0 V
2.0 V

~1000

5.0 V

~

~ 500

~

1000

:l:

700
500

'"'~

300

j.

200

r--i9t--r

L-

veE(pk) = VeE(clamp)
T1 _

L"oil (lepk)
Vee

50

~ 1 adjusted to obtain lC(pk)

BVCEO
L= 10mH
RBZ=Vee = ZOV Its

"Tektronix AM503
P6302 or Equivalent

Inductive Switching
L=200"H
RB2=0
Vee=ZOV
RBI selected for desired 'Bl
Scope -

RBSOA
L=200"H
RB2 =0
Vee = 20V
RBI selected for desired 'B 1

Tektronix

7403 or Equivelent
Note: Adjust -V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS
tlv
lC(pk) = lOA
'Bl = 1.0A
VBE(off) = 5.0 V
VeE(pk) = 400 V
Te= 25°e
Time Base =
100 nslcm

le(pk)= lOA
181 = 1.0A
VBE(off) = 5.0 V
VeE(pk) = 400 V
Te = 25°e
Time Base =

20ns/em

1-772

MJl6010A
MJHl6010A

@ MOTOROLA
.

Designer's Data Sheet

III

'
15 AMPERE

NPN SILICON
POWER TRANSISTORS

1.0 kV SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS
These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical.
They are particularly suited for line-operated switch mode applications.

500 VOLTS
125 and 175 WATTS

MJ16010A

Typical Applications: Features:
• Switching
• Collector-Emitter Voltage Regulators
VCEX = 1000 Vdc
• Fast Turn-Off Times
• Inverters
50 ns Inductive Fall Time -100'C (Typ)
• Solenoids
90 ns Inductive Crossover Time-l00'C (Typ)
• Relay Drivers
900 ns Inductive Storage Time -1 OO'C (Typ)
• Motor Controls
• 100'C Performance Specified for:
Reverse-Biased SOA with Inductive Load
• Deflection
Circuits
Switching Times with Inductive Loads
Saturation Voltages
Leakage currents

L

9tl ll'
--t

t. .. .

D

K

I

i~a'Vf

~.

Q.0

STYLE I

PIN 1. BASE

2. EMITTER
CASE COLLECTOR

-

H

,

I·

•

R

0

,

·G
U

NOTES
. - = = = : : : 0 - = = - - , 1 1 DIMENSIONS Q AND VARE DATUMS
2
IS SEATING PLANE AND DATUM
13 POSITIONAL TOLERANCE FOR
MOUNTING HOLED

i

m

! 1.1113lOoo5)el,lvel
FOR LEADS
It 11'3(0.005)13' I vel uel
1

MAXIMUM RATINGS
Rating

Symbol
VCEOlsus)

500

Vdc

Collector-Emitter Voltage

VCEV

1000

Vdc

Emitter-Base Voltage

VEe

6.0

Vdc

Collector Current - Continuous
- Peak (1)

IC
ICM

15
20

Adc

Base Current - Continuous
-Peak(l)

IB
IBM

10
15

Adc

Total Power Dissipation @ TC = 25'C
@TC = 100'C
Derate above TC = 25'C

Po

Operating and Storage Junction
Temperature Range

175
100
1.0

135
54
1.09

Watts

WI'C

'c

TJ,Tstg

Characteristic
Lead Temperature for Soldering
Purposes: 1/8" from Case for
5 Seconds

,

MJH16010A

"'."
PIH'

8AS~

2 COUECTOR
3 EMITTER
4 COUECTOR

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

CASE 1-05
TO-2D4AA
(Formerly TO-3t

MJ16010A MJH16010A Unit

Collector-Emitter Voltage

4 OIMENSIONS AND TOLERANces PER
ANSIY145.1973

Symbol
RruC

Max
1.0

TL

I

Unit
0.92

275

'CIW

'c

(1) Pul.e Test: Pulse Width = 5.0 mo, Duty Cycle" 10%.

CASE 340-01
TO-21BAC

Dooignor'. Data lor "Worst Cue" Conditions
The Designer's Data Sheet permits the design of most circuits entirely from the information
presented. Limit Curves - representing boundaries on device characteristics - are given to
facilitate "worst case" design.

1-773

MJ16010A,MJH16010A

I

ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

500

-

-

Vde

OFF CHARACTERISTICS (1,
Collector-Emitter Sustaining Voltage (Table 2)
(lC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = 1000 Vde, VBE(off)
(VCEV = 1000 Vde, VBE(off)
Collector Cutoff Current
(VCE = 1000 Vdc, RBE

=
=

ICEV
1.5 Vde)
1.5 Vde, TC

= 50 n, TC =

=

100'C)
ICER

100'C)

Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)

lEBO

-

-

mAde
0.25
1.5
2.5

mAde

1.0

mAdc

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figures 14 or 15

Clamped Inductive SOA with Base Reverse Biased

See Figure 16

ON CHARACTERISTICS (1,
Collector-Emitter Saturation Voltage
(lC = 5.0 Adc, IB = 1.0 Adc)
(lC = 10 Adc, IB = 2.0 Adc)
(lC = 10 Adc, IB = 2.0 Adc, TC = 100'C)

VCE(sat)

Base-Emitter Saturation Voltage
(lC = 10 Adc, IB = 2.0 Adc)
(lC = 10 Adc, IB = 2.0 Adc, TC

VBE(sat)

DC Current Gain
(lC = 15 Adc, VCE

=

=

-

hFE

-

Vdc
1.0
1.5
1.5
Vdc

-

-

1.5
1.5

5.0

-

-

-

-

25

100

ns

325

600

1300

3000

175

400

-

100'C)

-

5.0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE

= 0, ftest =

1.0 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time

Id
(lC = 10 Adc,
VCC = 250 Vdc,
IBI = 1.3 Adc,
PW = 30 p.S,
Duty Cycle'" 2.0%)

(lB2
RB2

= 2.6 Adc,
= 1.6 n)

tr
ts
If

(VBE(off)

=

5.0 Vdc)

Fall Time

-

tf

-

tsv
tfi

ts

80

-

-

900

2000

-

50

250

90

300

700

Inductive Load (Table 2)
Storage Time
Fall Time
Crossover Time

Storage TIme
Fall TIme

(lC = 10 Adc,
IBl = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)

(TJ

=

100'C)

tc
Isv
(TJ

=

150'C)

Crossover Time

tfi
te

(11 Pulle Test: PW - 3OO,.s, Duty Cycle" 2.0%.

1-774

-

1100
70
120

-

ns

MJ16010A,MJH16010A

TYPICAL STAne CHARACTERISTICS
FIGURE 1 50
30

~

'"
i!j
'"
B
I-

20

'-'
Q

10

DC CURRENT GAIN

FIGURE 2 - COLLECTOR-EMITTER SATURATION VOLTAGE
5.0

-

TJ = 100ae

n-- ,...

VeE = 5.0 V- t--

1215~e

...... r--.. ,......

II

t-

~515~e

1.0
10
Jells
TJ - l00'C-

0.5

--

0.3
0.2

;
5.0

03

05

1.0
2.0 3.0
5.0
Ie. COllECTOR CURRENT (AMPS)

20

10

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE
10

,
Idla - S.O
-Idls 10 : TJ
2sae
TJ 2S'C

0.0 5
0.150.2

0.3

J

f= leila

I-- I-Ie = 1.0 A

5.0 A

1111

III

O. I
001

0.02

IIII "'0.05

f'-.,

III

0 I 0.2
0.5
1.0
Ie. SASE CURRENT lAMPS)

t- TJ

1\

15 A

2.0

5.0

t:l
z

...5
'"
'"

'-'

<.i

2
0.1 5

10

o15 0.2

0.3

10

05
1.0
2 0 3.0
5.0
Ie. COLLECTOR CURRENT (AMPS)

15

FIGURE 6 - PEAK REVERSE BASE CURRENT
10
~

C,b

-IBI

=20 Amps

/.

Cob

100

..-- ....
-" Icna 10
TJ - l00·C

1000
500
300
200

15

3

10 A

IIII

FIGURE 5 - CAPACITANCE

~

10
2S·C

5

IIII

10

II

\

10000
5000
3000
2000

0.5
1.0
2.0 3.0
5.0
IC. COLLECTOR CURRENT lAMPS)

1==

FIGURE 4 - BASE-EMITTER SATURATION VOLTAGE
I. 5

1\

I--"

_i--'"

O. 1

3.0
0.2

A

~

TC

L

=25 aC

-/.

,...,V

L

50

...--

.......- , / '

----- ------

~

f-'"""

:::::::::: r-

10 Amps

IC = 10 Amps
TC =25°C -

r--

20
10

0.1

03051020
5.0 10 203050100
VR. REVERSE VOLTAGE (VOLTS)

300500850

1-775

10

2.0
30
4.0
VaE(.!!). REVERSE BASE VOLTAGE (VOlTS I

5.0

MJ16010A,MJH16010A

IIJ
TABLE 1 - RESISTIVE LOAD SWITCHING

to and tt

tel and tr

+Vdc

OV-,

I

11 Vdc

2N6191

+

- -35VU

~

A

50

F

-=

1.0 ~F

500

-=

OV

~

~

-V

OV-~+~

11V

Yin

-=

-

~.OV

A (0l~-4t~---c.

t r "'15ns

Vee.:.

*

"Tektronix
AM503
P6302 or
Equivalent

Vee

250 V

RL

500

Ie

S.OA

Vee

IB1

0.66 A

RL

500

IB2

1.0A

Ie

5.0A

RB1

200

IB

0.66 A

RB2

4.00

·Note: Adjust - V to obtain desired VBEloff) at

PointA.

For VBEloffl = 5.0 V. RB2 = 0

1-776

250 V

MJ16010A,MJH16010A

III

TABLE 2 - INDUCTIVE LOAD SWITCHING
+V~

0.021'oF

20

+

o

11 V

lOI'oF

~-35JJ

+----+<)A

p::

50

RB2

50

r--......- - o (

+

500

~ le(pk)

-V

le~

'--

~k)
VeE~

A

Tl ~

L-

Leoil (lCpk)
VCC

T1 adjusted to obtain IC(pk)

BVCEO
L = 10 mH

RB2

= '"

Vce = 20 Volts

'Tektronix AM503
P6302 or Equivalent

RBSOA

Inductive Switching
L= 200 I'oH
RB2 = 0
Vee = 20 Volts
RBl selected for desired IBl

L = 200,.H
RB2 = 0
Vee = 20 Volts
RBl selected for desired IBl

Scope - Tektronix
7403 or
Equivalent

Note: Adjust - V to obtain desired VBE(off) at Point A.

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC!--

..... j /
/"
IC .........

-

f\

..;:.cEIPkl

90% VCElpk11 1\ 90% ICIPkl

-ISV

I",

ffI ~II'- f-',,-

---J f-I c - '

/
VCE

10% VCElpkJ

- --\- -- --- --

IS-

90%ISI

"'-""

I--

-~
TIME

1-777

-'\.

w ......... ~ .....
IC pk

-- -

2'"'0 Ie

MJ16010A,MJH16010A

-

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
leIIa1

= 5.0, TC = 10O"C, VCElpkl = 400 V
FIGURE 8 -

letla1

--

STORAGE TIME

5000
VBElolf) oVolts
2.0 Vo~s

3000
2000
!1000

5.0 Vo~s

~
~ 300

J

FIGURE 9 -

200

3000
2000

~

VBE\off)

2.0 Volts

700
5DD

5.0 Volts

~

300

J

200

lDD
D D5

2.D

1.5

3.0

5.0

70

15

15

10

3D

2.0

FIGURE 10 -

FIGURE 11 -

COLLECTOR CURRENT FALL TIME

500

~

300

VBElolf

II

~

5D

_

"N
2.0Volts~

8::l

\
20

::l
200
~
>-

ia 100
'"co

50

i=

20

~
8

15

COLLECTOR CURRENT FALL TIME

20

3.0

5.D

70

10

---

FIGURE 12 -

I
VBElolf) -

50D
~

10
15

I I
30
5.0
7.0
IC. COLLECTOR CURRENT lAMPS)

20

FIGURE 13 -

-

"- ......~:OV~ltsl--;...
2~

2.0 Volts

i

15

I
0 VOlts~

I I

i"-.

CROSSOVER TIME

lDDO

.......,IY

.......

...............

IC. COLLECTOR CURRENT lAMPS)

1500

2!
>=
'"co
!$:

~
co

500

300
200
100

-

VSElolf)

2D

20

15
1.5

15
1.5

3.0

5.0

7.0

10

15

............

r-.....

15

2.0 Volts
5.0Vo~s

I
2.0

3.0

5.0

7.0

Ie. COLLECTOR CURRENT lAMPS)

1-778

10

oVolts
/'

r--

'"u

Ie. COLLECTOR CURRENT (AMPS)

15

I I

1000

:!

10

CROSSOVER TIME

15DO

.i' 50

2.0

o Volts

VaElolf)

r--

5 OVolts

10
15

10

500

c

~
>= 300

5.0Volts_

!2

100

oVolts ==;

--r-

~ 200

!

70

1000

1000

!

50

IC. COLLECTOR CURRENT lAMPS I

IC. COLLECTOR CURRENT lAMPS)

~

J

= Volts

1000

i1§

10D
0.07
0.05

S

STORAGE TIME

5DDO

lli
Ci!

lli 500
Ci!

= 10, TC = 10O"C, VCElpkl = 400 V

MJ16010A.MJH16010A

III
GUARANTEED OPERATING AREA INFORMATION
FIGURE 14 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA - MJ16010A

FIGURE 15 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA - MJH16010A
20

20

10/"

10
~

!

50
3.0
20

5.0
:;:; 3.0
2.0
:> 1.0

1.0

20
:5-

>-

16

B

~
=
'"

12

:::l

80

8

'"

~
~

40

11

o

500

100

\

.I.
r--- ICIIB '" 4.0
r--- TJ-, '" l00'C

100

,

\

"

\

\
\

,~ ~

Ei;:t
'"z:

'V

60

~ 40

VBE(offl = 5.0 V _ I---

_~

i

500

j

'"
~

---MJHl6010A
~ 20
1 - - - MJl6010A

"i-..

Second Breakdown Derating

........

r--... "
, "-

............

"

Thermal Derating;- ,

~

\.

~

,"", K

'"

I\,.

300

~~

~ 80

,\
'I

-

FIGURE 17 - POWER DERATING

\

-

t;j

'"

~ 0.20
o
'-'. 0.10 ~ Bo nding Wire limit
Th ermallimit
-0.05
Second Breakdown
0.03
0.02
20 30
50 70 100
200
5.0 7.0 10
VCE, COLLECTOR·EMlmR VOLTAGE IVOLTSI

MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

VUE(offl = 0 V\

~

0.50

.Y

f=j

'"

25'C

t> 0.30

'" "

1 §---B~ndingIWir: Limit
si>
005 ~---Thermal Limit
003
I I ISieond IBr.a~downl
0.02
50
10
20 30
50
100
200 300
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI

":;

TC

dc

u

:5

de
TC - 25°C

FIGURE 16 -

10~""

1.0ms

I

1.0m'~ -

05
03
02

...

10

'",

",

........

1

,

o

!"
I

\i

o

200 300 400 500 600 700 800 900 1000 1100
VCElpkl' PEAK COLLECTOR·EMITIER VOLTAGE (VOLTS)

............

I'-J

40

80
120
TC, CASE TEMPERATURE I'CI

160

'" "'"

200

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC - VCE limits of the transistor that must be observed
for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves
indicate.
The data of Figures 14 and 15 are based on TC =
25'C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC ;;. 25°C. Second
breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages
shown on Figures 14 and 15 may be found at any case
temperature by using the appropriate curve on Figure

17.
TJ(pk) may be calculated from the data in Figure 18.
At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than
the limitations imposed by second breakdown.
REVERSE BIAS

For inductive loads, high voltage and high current
must Le sustained simultaneously during turn-off, in
most cases, with the base-to-emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value
of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load
line shaping, etc. The safe level for these devices is
specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable putting
reverse biased turn-off. This rating is verified under
clamped conditions so that the device is never subjected
to an avalanche mode. Figure 16 gives the RBSOA characteristics.

1-779

MJ16010A,MJH16010A

-

FIGURE 18 - THERMAL RESPONSE

1.0

i~~
I-;;i

~~
Zz

0.7 :::0 - 0.5
0.5
03
0.2

13>5
~

ffi

:t 0::

:g

0.1

01

~~ 0.07
!l;! z 0.05

-

02

-

:;:...-

0.03

F= Jf

0.03
0.02 ~

R8JCItl rill R8JC
R8JC 1.0 or ~ .92°CIW
TJlpkl TC Plpkl·R8JClll

....-:::: ~ ~

y-

VI

~ 1. 0

1. 1

t:i 1- 0

/,

!::i

!ii
~

1'-

II

IC= 5.0 A\

~

5. 0

I:.

IC= 20 A

IC = 10 II

~

FIGURE 3 - COLLECTOR-EMITTER SATURATION REGION

in

\
IC=15A\

t;

I
0.5 0.1

TJ = 25°C

~ 2. 1

-r-.

-tUJsso c

I II

in 2. 7

--- ,

+/=II~OOC

,JI~

10K

L

./
./

./

/
0

100°C
7SOC

I

I - - r-REVERSE

Cob

t--.

FORWARD

TJ = 25°C

VCE· 2S0V~

10 0

2SoC
10- 1
-0.4

-t
-02

-02

-04

0.1

-06

VBE. BASE EMITTER VOLTAGE IVOLTSI

1-784

1.0

10
100
VR. REVERSE VOLTAGE (VOLTS)

1000

MJ16014, MJ16016

l1li

TYPICAL DYNAMIC CHARACTERISTICS

FIGURE 7 - STORAGE TIME

7. 0

f-l

.1
3. 0

~

2. 0

-

VSEloffl~ts

5. 0

!

FIGURE 8 - STORAGE TIME

I

I

1

vSEloll)

=2.01Volts

f-'1

~

I

I- VSEloff)

.ho Ot-

=5.0 Volts

I-

I - - - III =5
TJ - 75°e
f-.

0.5 0
10

20

7. 0
0

a
j-----

I
~

30 0

~

i13
:5

!;i
::l

o

'"

'\.

"'" "-

I

1000
70 0
50 0

~

30 0

~ 20 Ot-

!z

~ 10

13

10

3.0

2.0

2.0

o'"

--....

5.0
7.0
10
IC, COLLECTOR CURRENT lAMPS)

~

20 0

~

10 0
70

~
'"
~

I

t:;

-

VBEloH)

.:-.
'\.

L
.:::-:,..,

I

2.0

3.0

7.0
10
5.0
IC, COLLECTOR CURRENT lAMPS)

15

20

FIGURE 12 - CROSSOVER TIME

1500
100 0
700

=2,0 Volts

O~ III =5
TJ =75°e
Ot- VCC =20 Volts
20
15
7,0 S,O
10
3.0
4.0
5,0
2.0
IC, COLLECTOR CURRENT lAMPS)

I

O~VSEIO~) =O~

10

20

I I I I

=0 Volt......... r-.,

20

=2.0 Volt"""-': ~S:IOH; =5.0 Jolt;

0 III =10
TJ =75°C
0
VCC =20 Volts

~

=5.0 Volts

VSEloff)

li

70
0

8

VSEloH)

I

3.0
5.0
7.0
10
IC, COLLECTOR CURRENT lAMPS I

1

vSEloHI

FIGURE 11 - CROSSOVER TIME

150 0
100 0
70 0
"i 50 0
;;; 30 0

~

=5.0 Volts

FIGURE 10 - COLLECTOR CURRENT FALL TIME

=5.0 Volts

III - 5
01- TJ = 75°e
01- VCC =20 Volts

VSEloHI

1.0

-=

=2.0 Volts

.•.

~

o Volts

VSEloff)

VSElolfl

7
1----. III - 10
51----· TJ =75°C
20

~Eloff)

I

20 0

10 0
0
50

=2.0 Vo~s

L

~

V

01---

3.0
5.0
70
10
IC, COLLECTOR CURRENT lAMPS)

VSEloff)

I

=0 Vo~

::::::-

FIGURE 9 - COLLECTOR CURRENT FALL TIME

100 0
70 0
50 0

I
VSElolfl

0

"\.

'\.

I

1 50a
:Ii!

X'"

~

'\.

"\

i

30 a VSEloH)
20 0 '

-........

o 10

=2.0 vOii;'
I

O::::VSEIOH)~

VSEloff)

"

'\.

=5.0 Volts

I'
I'-..

V

L

~~

5 70

oS> 50

20

1-785

1l1- 10
01- TJ =75°C
201- Vce = 20 Volts
I
15
2.0
3.0

-5.0
70
10
IC' COLLECTOR CURRENT lAMPS)

15

MJ16014, MJ16016

FIGURE 14 - REVERSE BASE CURRENT

FIGURE 13 -INDUCTIVE SWITCHING MEASUREMENTS

0

IC.!--,.:

..",..

Ie.-""

VI

./
I- f--'sv

"';:'CEIPkl

["\

90% VCE(pk) ~

t---

i

-',,-

18-

-

90% 181

--\-

""'" ---

/'

10", ...... !-~
2,(e
IC Ok

-- --- - - -- -

5. 0

III

4.

ii1
""<

3. 0 p

°v
0

~

V

--

V

.....

0

TIME

t

I

I

IC = 15 Amp._
TJ = 25°C

0

~

= 3.0 Amp •

I I
-r 1

~:-r:
IB1 = 1.5 mp •

./

'"
:i
ffi

-- -

..............

6. 0

w

I'\.

10% VCE(ok)

r-

-" -IBl

7. 0

:::>

u

1---. r--'c~ t--

1/

T~

9. 0

5- 8.0

1\ 90% I C(pk)

trv~1 i-Jt'I,-

VCE

en
e>.

:e

I I

1.0
2.0
3.0
4.0
VBElolfl' REVERSE BASE EMITTER VOLTAGE IVOLTSI

5.0

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 15 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

0
0
~1 0
:e 7. 0
5. 5. 0
!z 3. 0
2. 0

i

B 1.0

,

FIGURE 16 - MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

0

10 ",

~

:e

5....
i\'i

1.0 m}TC = 25°C

'"

'"
13

de

~ g5

7

~

o. lr--Seeond Breakdown limit

0.0 7
0.0 5
0.0 3
5.0 7.0

~

""-

0

\

5
TJ'; 100°C
0-~,;;'4.0

'"ct;

... -Bondmg Wire limIt
:::I O. 3
8 o. 2 ----Thermal limit

5

\,

5

~

0

20
50 70 100
200
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTSI

0

450

,

VBE=O- ~,

5. 0

10

\\

\

.... VaElolfl = 1.0 to 5.0 V

V

--t -- -,

800200
400
600
VCE. COLLECTOR-EMI77ER VOLTAGE IVOlTSI

100

SAFE OPERATING AREA INFORMATION
FORWARD BIAS

the power that can be handled to values less than the
limitations imposed by second breakdown.

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; I.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 15 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 17.
At high case temperatures, thermal limitations will reduce

REVERSE BIAS
For inductive loads, high voltage and' high current
must be sustained simultaneously during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-currant
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 16
gives the RBSOA characteristics.

1-786

MJ16014, MJ16016

FIGURE 17 - THERMAL RESPONSE
1. 0
5

:== ~

c

D' 5

-

0-.2
2
0-.1

1

...- .-

.....

ROJeltl- rltl ROJC
ROJC = O.7 oelW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME At'l
TJlpki - TC' Plpkl R'Jel'I
P(pkl

::;:::?"

tJUl

Smgle Pulse

-r~~

TIT I
III

0.01
0.1

~UTY

!
10

1.0

CYCLE, 0 • '1/'2

1000

100

10000

.' TIME IMSI

FIGURE 18 - POWER DERATING
100

~~

a

"""

0

r---...,

Second Br.akdown
DeratIng

f".... .............

:--.......

Thermal"Derating --til

""-

0

........

...........

~

""

0

0
40

-

120
80
TC CASE TEMPERATURE (oel

"'" "

160

200

TABLE 1 - RESISTIVE LOAD SWITCHING

td and t,

+Vde = 11 Vde

t. and tf
OV,

I

=-35VU

A

50

-v

vee = 250 Vdc
IIV

~

Vrn
OV

~.

RL = 16 n
le= IS A
'B= 1.5 A

OV~+V_
-

-IB

t,';;15ns

UT'~
~

l
.".

*TektronlX

vee = 250
RL =16 n

P·6042 or
Equivalent

i

~V

le= 15A

RL

Vee!

IBI = 1.5 A
RBI = 7.5 n
'B2 = 3.0 A
RB2 = 1.6 n
Fo, VBE(off) = 5.0 V RB2 = 0

n

'Note Adlust -Ii to obtarn deSired VBEloffi at POint A.

1-787

MJ16014, MJ16016

IIIJ

TABLE 2 - INDUCTIVE LOAD SWITCHING

o

~-351J

A

50

p~;' .......---r
+ .~-=-

500

A (o;~-f*--r

T1 = LeOiI (lCpkl
VCC

50

T1 adjusted to obtain lC(pkl

BVCEO
L = 10 mH
RB2

VCC

='"

Vee = 20 Volts

RBSOA
L= 200pH
RB2 =0
Vec = 20 Volts

RS1 selected for desired IS1

RS1 selected for deSired IS1

Inductive Switching
L= 200pH
RB2

=20 Volts

*Tektronlx
P-6042 or
EqUivalent

=0

Scope - TektrOniX
7403 or
EqUivalent

Note Adjust

-v to obtain deSired VSE(off) at POint A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

IC(pkl = 15 A
IBl = 1.5 A
VBE(offl = 5.0 Volts
VCE(pkl = 400 Volts
TC = 25°e
Time Base

= 100

lC(pkl =15 A
IBl =1.5 A
VBE(offl = 5.0 Volts
VeE(pkl =400 Volts
TC =25°e
Time Base = 10

ns/cm

ns/cm

1-788

®
_

MJl6018
MJHl6018
MOTOROLA

III

De!oiiig'ncrs Data Sheet
10 AMPERE

NPN SILICON
POWER TRANSISTORS

1.5 kV SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS
These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical.
They are particularly suited for line-operated switchmode applications.

800 VOLTS
150 AND 175 WATTS

LIa.-f

Typical Applications: Features:
• Switching
Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Daflection

O~~

• Collector-Emitter Voltage VCEX = 1500 Vdc
• Fast Turn-Off Times
280 ns Inductive Fall Time-100"C (Typ)
470 ns Inductive Crossover Time-100·C (Typ)
2.6 p.s Inductive Storage TIme-100·C (Typ)
• l00·C Performance Specified for:
Reverse-Biased SOA with
Inductive Load
Switching TImes with Inductive Loads
Saturation Voltages
Leakage Currents

@J

MJ1801.

t.~ ~

~

J

y

a

•

...

2.....

H

1

III

+

STYLE 1
PlfII1. BASE
2. EMmER

0 I

,

CASE COLLECTOR

G

u
NOTES, DIMENSIONS Q AND V ARE DATUMS.
2.
IS SEATING PLANE AND DATUM
3. POSITIONAL TOLERANCE FDA

m

MAXIMUM RAnNGS
lIMing

MJ1801.

Symbol

Collector-Emitter Voltage
Collector-Emitter Voltage

MJH1801.

Unit

VCEOlsus}

800

Vdc

VCEX

1500

Vdc

VES

6.0

Vdc

Emitter-Base Voltage
Collector Current
- Continuous
- Peak(l}

MOUNTING KOlE Q.

.7
1A

10
15

Po

Operating and Storage
Junction Temperature
Range

TJ,Tstg

ANSIVI4.Ii,1913.

IS'
I&.BSIC

CASE 1.05

11
1

4.83

6.33

3.81

4.19

TO·204AA

(To-3 TYPE)

8.0
12

IS
IBM

Total Davice Dissipation
@TC = 26·C
@TC = l000c
Darate above 25·C

4. DIMENSIONS AND TOLERANCES PER

1

10'

11.
,.

Adc

Sase Current
- Continuous
- Peak (1)

FOR LEADS'

I + I I.13I•.•06,@T I v@lo@1

315

Adc
IC
ICM

W§•.•06,@ITlv@1

MILLIMETERS
IJtM MIN MAX
A
39.37
21.08
6.3& 72

,

MJH1801.
Watts

175
100
1.0

150
50
1.0

Wf'C

-66 to 200

-55 to 150

OC

1.0

Unit
.C/W

THERMAL CHARACTERISTICS
Cher_lstlc

Max

Symbol

Thermal Resistance,
Junction to Case

1.0

R6JC

Lead Temperature for
Soldering Purposes, 118"
from Case for 5 Second •.

·C

275

TL

11) Pul ... Test: Pulee Width" 6.0,... Duty Cycle

I

~

·,• '''' ..,

"M

D

10%.

••
,
H

DeoIg....... DellI for "Want CUeU Cand_

K

The Dellgne(1 0l1li Shoat pormlts the deaign of most circuits entirely from the Informstlon
presented. Limit Curves - repraeentlng boundari•• on device characteriatica - are given to
fecilltalll uWOrll oa..u _Ign.

1-789

MILLIMETERS
MIN M.X
2108
15.49 15.90
4.19
5.08
1.02
1.35 1.65
5.21
5.72
2.41
3.20
0.38
0.64
1270 15.49
15.88 16.51
12.19 12.70
4.22

L

N
0

....

INCKES
M,N MAX
08DO 0.830
0.610 0626
0165 D.2DD
0.040 0.065
0.065
0.225
0.095 0.128
0.015
0.500 0610
0.625 0.650
0.480 0.500
0.159 0.1116

STYLE 1
I. BASE
2 COLLECTOR
3. EMITTER
4. COLLECTOR

,."
02"

0'"
CASE340-G1

TO-21IAC

MJ16018,MJH16018

II]

MJ16018
MJH16018

I

ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

BOO

-

-

Vdc

ICEV

-

-

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(lC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = 1500 Vde, VBE(off)
(VCEV = 1500 Vdc, VBE(off)
Collector Cutoff Current
(VCE = 1500 Vdc, RBE

=
=

1.5 Vde)
1.5 Vde, TC

= 50 n, TC =

=

100'C)
ICER

100'C)

Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)

lEBO

mAde

-

0.25
1.5

-

2.5

mAde

-

1.0

mAdc

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(lC = 5.0 Adc, IB = 1.0 Adc)
(lc = 10 Adc, IB = 4.0 Ade)
(lC = 5.0 Adc, IB = 1.0 Ade, TC = 100'C)

VCE(sat)

Base-Emitter Saturation Voltage
(lc = 5.0 Adc,IB = 1.0 Adc)
(lC = 5.0 Adc, IB = 1.0 Adc, TC

VBE(sat)

DC Current Gain
(lC = 5.0 Adc, VCE

=

l00'C)
hFE

= 5.0 Vdc)

-

7.0

-

Vde
1.5
1.5
2.0
Vde

-

-

1.5
1.5

-

-

ns

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE

= 0, ftest =

1.0 kHz)

SWITCHING CHARACTERISTICS

.....sttv. Load (Table 11
Delay Time
Rise TIme
Storage Time
Fall TIme
Storage TIme

tf

-

ts
tf

td
(lC = 5.0 Adc,
VCC = 250 Vdc,
IBI = 1.0 Adc,
PW = 30ps,
Duty Cycle'" 2.0%)

(lB2
RB2

= 2.0 Adc,
= 3.00)

(VBE(off)

=

tr
ts

2.0 Vdc)

Fall TIme

50

100

300

400

2000

3000

900

1200

-

1600

2400

-

500

650

2000

3000

200

400

Inductlv. Load (Table 21
Storage Time
Fall TIme

Crossover Time
Storage Time
Fall Time

tsv
(lC = 5.0 Adc,
IBI = 1.0 Adc,
VBE(off) = 2.0 Vdc,
VCE(pk) = 400 Vdc)

(TJ

= 25'C)

tfi
tc
tsv

(TJ

=

l00'C)

tfi

Crossover Time

tc

III Pul... Test: PW - 300 /UJ, Duty Cycle", 2.0%.

1-790

-

350

500

2600

3600

280

460

470

620

ns

MJ16018,MJH16018

III

TYPICAL STATIC CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN

70
50

z

30

I

Td

-

g

~

.

~

-"

..........

I

I

r-...

I
25'C

10

-.....:::

0.3

a

1.0

'"~

0.5

>

~

'"~

~

u

10

'%

il

>

-

0.1
0.2

0.3

,...... V

in 0.7

a

-

r-/3r~5.0

2.0

5.0

10

25'C

TC

I--

lOO'C

.

~ 0.2

25'C

~

,', , II

-

/3r

~

10

I

lil

>

0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS!

5.0 7.0

10

0.1

0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS!

5.0 7.0

10

RGURE 6 - CAPACITANCE

10K
/

I

/
/

103

r-- -TJ
102

0.1
0.2
0.5 1.0
IB, BASE CURRENT (AMPS!

-I-

RGURE 5 - COLLECTOR CUTOFF REGION

~

0.05

03

~

104

~
t-

--

[\.
0.02

0.5

~'"
~

\

25'C

~

~

~
w

TC

TC

FIGURE 4 - BASE-EMITTER VOLTAGE

1.0

'/ /
,/

0.05
0.10

lolA

'\

0.1
0.01

>

20

10
25'C

0.2

17101~\

\

~ 0.3
t.:i
::::1 0.2
8
il

5.0V

I
/3r
TC

1.0

~

0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS!

:e 0.3
'I'

Illl

3~ol

~ 0.5

~

FIGURE 3 - COLLECTOR-EMITTER SATURATION VOLTAGE
5.0
in
/3r - 10
~
a 3.0
TC ~ loo'C :-/
~
w 2.0

'"~

~ 1~01

~

VCE

5.0

IIC

§! 0.7

i7.0

3.0
0.2

I

~

II
11~-!:

~ 20

:::>
u

RGURE 2 - COLLECTOR SATURATION REGION

2.0

15O'C
125'C

.....

3.0K

V

~ 1.0K

/

w

l;;l 300

:::>
'"
u

l00'C
V
101
75'C
I
r-- -REVERSE _ _ f--. FORWARD
~
VCE
8 100
25'C
.Y
10- 1
-0.4
-0.2
0
+0.2
+0.4
VBE, BASE,EMITIER VOLTAGE (VOLTS!

~

§

I~i~
1111
Cob

100

<.5

250V=

TC

30

25'C

10
+0,6

1-791

0.1

1.0

10
100
VR, REVERSE VOLTAGE (VOLTS!

1.0K

MJ16018,MJH16018

OJ

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
FIGURE 7 - STORAGE TIME

RGURE 8 - COLLECTOR CURRENT FALL TIME

10K
7.0K

2.0K

--

!2.OK

~ 1.0K

w

~ 700

~ 1.OK

OV-

VBEloff)

5.DK
3.DK

~

0-

:z:

~

!

~

~

,........

r-..........

:E

!;l! 500

I~

1'-..

...

.f}

100

50
1.0

l"-l
90% VCElpk) 11\ 90% IClpk)

/

VBEloff) - 5.0 V

OV

TC = 75"<:
VCC = 20V

2.0

10

r---

trvfflPttfi-t-tti-

I-t--tsv

)---. t-Ic-l l-

lL
VCE

r- t- ~

10% VCElpk)

3.0
5.0
IC. COLLECTOR CURRENT lAMPS)

7.0

~

10

~ !=:-..
,~

f-, F::::-."-' .......... N .... ............
" ~
~
r--.... .... ...

80

SECOND BREAKDOWN
DERATING
-

.-{

r----

THERMAL::::
DERATING

-

-

-

l---

TIME

RGURE 11 - POWER DERATING
100

"

........

, "

J

"

~

-MJl6018
-MJHl6018

I"---

i

"-

,I

40

80

120
TC. CASE TEMPERATURE I"C)

1-792

160

~

I"
10% .....
IC pk

9O%IBI

IB- H

-- --\- - - - -

o
o

~CElpk)

VI

/

I

,9t' = 5.0

7.0

RGURE 10 - INDUCTIVE SwrrCHING MEASUREMENTS

2.0 v

0
0

I
2.0
3.0
5.0
IC. COLLECTOR CURRENT lAMPS)

1.0

""'r--J

1=
a:

a: 200

10

L::"

r-- -.;::

,9t' 5.0
75"<:
TC
VCC = 20V

50

IC~

1.0K

U>
U>

100

JE

FIGURE 9 - CROSSOVER TIME

1'----

"-

~
~~

20
7.0

2.0
3.0
5.0
IC. COLLECTOR CURRENT lAMPS)

-

~

...

,9t' = 5.0 ITC = 75"<:
Vee = lOV I-

200

2.0K

O~

300

Il!
a: 200
::>
a:

j300

5.0K

5.0 V

::::l 500

!jl500

100
1.0

~VBEloff) - 2.0 V

~

~

~.O~
f""

I-

~
200

-

t-~

MJ16018.MJH16018

III

GUARANTEED SAFE OPERATING AREA LIMITS
FIGURE 13 - MAXIMUM REVERSE BIAS
SAFE OPERA11NG AREA

RGURE 12 - MAXIMUM FORWARD BIAS
SAFE OPERA11NG AREA
100

if

ie

50
30
20

!! 14
z>-

~ 10
~

u

t;

3.0
2.0
1.0

~
a::
u
a::

10 I'

>~ 5.0

l§

16

::E

::>

1.0ms

~

de

25°C

c-TC

g 0.5 =- ": 0.3 ~ 0.2

B.O

0

6.0

u

'"~

-BONDING WIRE LIMIT
THERMAl LIMIT
SECOND BREAKOOWN LIMIT

10

u

~

.......

4.0

~

r-..

\

12

\

1\
.\
TC "'ll00°C r- VBE(off) = 0 V
III = 5.0

-

I

J;;r 2.0

I~ ~

[\

0.1
10

20

30
50
100
200 300
500
VCE, COLL£CTOR·EMlmR VOLTAGE (VOLTS)

1.OK

200

VBE(off)

= 2.0 V

h

400 600 800 1000 1200 1400 1600 1800 2000 V
VCE(pk), PEAK COLLECTOR CURRENT IVOLTS)

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC-VCE limits of the transistor that must be observed
for reliable operation; i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25°C; TJ(pk)
is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC ;;. 25°C. Second breakdown
limitations do not derate the same as thermal limitations. Allowable current atthe voltages shown on Figure
12 may be found at any case temperature by using the
appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 14.
At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than
the limitations imposed by second breakdown.

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base-to-emitter junction· reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value
of collector current_ This can be accomplished by several means such as active clamping, RC snubbing, load
line shaping, etc. The safe level for these devices is
specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during
reverse biased turn-off. This rating is verified under
clamped conditions so that the device is never subjected
to an avalanche mode. Figure 13 gives the RBSOA characteristics.

RGURE 14 - THERMAL RESPONSE
5

~
a; O.1.07
~ O. 0
5
0

0.5

- -- '"

~

~ O.3

z
;'E O. 2

-

0.2

~

O.
O. 1
~ 0.07 ==0.05
ffi 0.05
-0.02
~
~ 0.03
~ 0,02-fut:;

~

0.0 1.......t"1
~
0.01
0.02

>-

.....

""'"

SI~G~Em~EI
0.05

0.1

0.2

0.5

1.0

~

P(pkl

tJUl
~;;-~

DUTY CYCLE, 0 =
I I
IIIII
2.0
5.0
10
20
t TIME Imsl

1-793

11~2

R8JC(I) = rttl ROJC
R8JC = 1.O"CNI Max

oCurves Apply For Power
Pulse Train Shown
Read Time @ '1
TJ(pkl- TC = P(pkl R8JC(I)

I I I I IIII
50
100

I

I
200

1 I I I II
500

1.0 k

MJ16018,MJH16018

111

TABLE 1 -

RESISTIVE LOAD SWITCHING

OV~+V_

+Vdc = 1 1 Vdc

- Usv

OV

~-35]J.

P

A

02 P F

50

IBl = 1.0 Adc
RBl = 10 n
IB2 = 2.0 Adc
RB2 = 3.0 n
For VBE(off) = 2.0 V RB2 = 0 n

Vee = 250

RL = 50

1 OpF

n

Ie = 5.0 Adc

500

-v

* Note

Adjust -V to obtam deSired VSE(off) at Pomt A

TABLE 2 - INDUCTIVE LOAD SWITCHING
+V = 11 V

002 pF

2N6191
20

10 pF
A

50

500

~k)

VeE~

L

VCE(pk)" VCE(clamp)
r1 = Lcoll (Iepk)
Vee
r 1 adJusted to obtain le(pk)

VIBRlCEOlsus)
L = 10 mH
RB2 : 00
Vee : 20 Volts

Inductive Switching
L" 200 pH
RB2" a
Vee" 20 Volts
RSl selected for deSired 181

RBSOA
L" 200 pH
RB2" a
Vec" 20 Volts
RSl selected for deSired 181

"Tektronix
Scope - Tektronix

AM503
P6302 or

7403 or

Equivalent

EqUivalent

Note Adjust -v to obtam deSired VBE(off) at Pomt A

1-794

MJEI05

®

MOTOROLA

5 AMPERE

MEDIUM-POWER PNP SILICON TRANSISTOR

POWER TRANSISTOR
· .. for use as an output device in complementary audio amplifiers
up to 20-Watts music power per channel.

•

PNP SILICON
50 VOLTS
65 WATTS

High DC Current Gain - hFE = 25·100@ IC = 2.0 A

•

Thermopad

•

Complementary to NPN MJE205

High-Efficiency Compact Package

MAXIMUM RATINGS
Rating

Svmbol

Value

VCEO

50

Vde

Collector-Base Voltage

Vca

50

Vde

Emitter-Base Voltage

Collector-Emitter Voltage

Unit

VEa

4.0

Vde

Collector Current

IC

5.0

Ade

Base Current

Ie

2.5

Ade

POll)

65
0.522

Watts
W/oC

TJ, T stg

-55 to +150

°c

Total Power Dissipation
Derate above" 25°C

@

T C "" 2SoC

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case
(1) Safe Area Curves are Indicated bV Figure 1. Both limits are applicable and must beobserved

ELECTRICAL CHARACTERISTICS ITC

=

-'T

250 C unless otherWISe noted)

Characteristic

Symbol

Min

I

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (2)

Collector Cutoff Current

50

-

-

0.1
2.0

-

1.0

mAde

ICBO

(Vca = 50 Vde, IE = 01
(Vce = 50 Vde, IE = 0, TC = 1500C)

Emitter Cutoff Current

Vde

BVCEO

IIc = 100 mAde, la = 0)

mAde

lEaD

(VeE = 4.0 Vde, IC = 0)

(lc = 2.0 Adc, VCE = 2.0 Vde)

INCHES
MIN MAX

16.13 16.38
12.57 12.83
3.18 3.43
1.09 1.24
3.51 3.76
4.22 SSC
2.67 2.92
0.813 0.864
15.11 16.38

0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 SSC
0.105 0.115
0.032 0.034
0.595 0.645
So TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080

A
B
C

D
F
G
H

J

M

n

-

hFE

IIc =2.0 Ade, VCE = 2.0 Vde)

Base-Emitter Voltage

MILLIMETERS
DIM MIN
MAX

K

ON CHARACTERISTICS
DC Current Gain

STYLE 2:
PIN 1. EMITTER
~::T C
2. COLLECTOR
3. BASE

~

25

Vde

-

1.2

(2) Pulse Test: Pulse Width ~300 ~s. Dutv Cycle ~2.0%.

1-795

U

V

100

VeE

R

~TYP

4.70
LSI
6.22
2.03

4.S5
2.16
6.48

CASE 90·05
TO·127

MJE105

FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
0
0~TJ'15IJOC
0

There are two limitatIOns on the power handling ability of a
transistor; average Junction temperature and second breakdown.
Safe operating area curves indIcate Ie - VeE limits of the tranSistor

100",

,

...... .....

0

". ~.Oms

0

that must be observed for reliable operation. I.e., the transIstor must
not be subjected to greater diSSipation than the curves indIcate.

1.1

The data of F,gure 1

l.D

0p-----THERMAL LIMIT OTC' 25.C
.1F=
•
BONDING WIRE LIMIT
.5
SECOND BREAKDOWN LIMIT

IS

based on TJ(pkl

= IS0oC;

TC

IS

varoable

dependmg on conditions. Second breakdown pulse limits are valid

for duty cycles to 10% prOVIded T J(pkl ,;;IS00 C. At hIgh cas•
temperatures, thermal limitations Will reduce the power that can be
de

.3

handled to values less than the limitations Imposed by second
breakdown .

1\

.2

J

o.1
1.0

2.0

3.0

5.0

1.0

10

20

50

30

VCE. CoLLECTOR·EMmER VOLTAGE (VoLTSI

FIGURE 3 - DC CURRENT GAIN

FIGURE 2 - "ON" VOLTAGES
2.0

III

1.8

~

>

ffi

« 2.0

~

VBE(a"OICIlB =10

I [I I 1

~P'"

t\.

I "

o

0.01

I

........

55·

~ 0.1
~ 0.5

i3

0.3

<.>

I I VCE(a"O ICIIS' 10 L'I

Q

V

L 11111

r--

0.02 0.03 0.05
0.1
0.2 0.3 0.5
'.0
IC. COLLECTOR CURRENT (AMPSI

~

0.2

o. 1

2.0 3.0 5.0

0.02 0.03

0.01

0.05

0.1

50

~

"'

~

"- ~
"-.......

"'""- .......
25

0.2 0.3

0.5 0.1 1.0

IC. COLLECTOR CIJRRENT (AMPSI

FIGURE 4 - POWER DERATING
5

"1"D.

0:
0:

0.4 t-- VBE 0 VCP 2.0 V
0.2

~

=2.0 V-

~

~~

;: 1.0

1.2

~ 0.8
o
>0-6

25·C

0:

VeE

TJ .l.'501

~

'"o

1.4

:; 1.0

3.0

N

:::;

TJ' 25·C

1.6

0

5.0

50
75
100
Te. CASE TEMPERATURE (oCI

1-796

125

150

175

2.0 3.0 4.0

®

IJE170 thru MJE172 PNP
MJE180 thru IJE182 NPN

MOTOROLA

COMPLEMENTARY PLASTIC SILICON
POWER TRANSISTORS
3 AMPERE

. designed for low power audio amplifier and low current, high
speed switch ing appl ications.
•

POWER TRANSISTORS
COMPLEMENTARY SILICON

Collector· Emitter Sustaining Voltage VCEO(sus) = 40 Vdc - MJE170, MJE 180
= 60 Vdc - MJE171, MJE181
= 80 Vdc - MJEl72, MJE182

•

DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc
= 12 (Min) @ IC = 1.5 Adc

•

Current-Gain - Bandwidth Product = 50 MHz (Min) @ IC = 100 mAdc

•

Annular Construction for Low LeakagesICBO= 100nA(Max)@RatedVCB

40-60-80 VOL TS
12.5 WATTS

tr

MAXIMUM RATINGS

Collector~8ase

MJE170 MJE171
MJE180 MJE181

Rating

Symbol

Voltage

VCB

60

VCEO

40

Collector-Emitter Voltage

Emitter-Base Voltage
Collector Current - Continuous

Unit

80

100

Vde

60

80

Vde

VEB

----7.0-

Vde

IC

----3.0----6.0_

Ade

Peak

Base Current

MJE172
MJE182

18

1.0-

Ade

T A == 25°C

PD

1.5_
---0.012_

Watts
WIDC

Total Power Dissipation @TC == 2SoC

PD

_12.5_
----0.1_

Watts
WIDC

Total Power Dissipa_tion
Derate above 25°C

@

-

Derate above 25°C
Operating and Storage Junction

TJ,Tstg

_

-65 to + 1 5 0 _

~H

K

DC

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Thermal Resistance. Ju nction to Case

°JC

10

DCIW

Thermal Resistance, Junction to

°JA

83.4

DCIW

Unit

Ambient

STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE

FIGURE 1 - POWER DERATING

t.n 2.4 12

........

~

~ 2.010

z

o

~ 168.0

~

......

E 1.26.0

"'-

"-

.....

~

"'- I,
......

~ 0.84.0
~

,"'-:,

'""'"-.J

Y

0.4 2.0

o

-"":C

40

60

80

MIN

A
B
C
D
F

10.80
7.49
2.41
0.51
2.92
2.31
1.27
0.38
15.11

G
H
J

"........

K
M

"" "'-r-.... .,

0

20

OIM

100

120

Q

R

"

140

S
U
160

T. TEMPERATURE ('CI

1-797

V

MAX

11.05
7.75
2.67
0.66
3.18
2.46
2.41
0.64
16.64
3 TVP
3.76
4.01
1.14
1.40
0.64
0.89
3.88
3.94
1.02

CASE 77·04
To-126

IVIJE170, MJE171, MJE172, PNP MJE180, MJE181, MJE182 NPN

IIJ

ELECTRICAL CHARACTERISTICS ITe = 2soe unless otherwise noted)

I

I

Characteristic

Symbol

Min

Max

40
60
80

-

-

-

0.1
0.1
0.1
0.1
0.1
0.1

-

0.1

SO
30
12

2S0

-

-

-

0.3
0.9
1.7

-

1.5
2.0

-

1.2

SO

-

-

60
40

Unit

OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage
(lC = 10 mAde, IB = 0)

Vde

VCEOlsus)
MJE170, MJE180
MJE171, MJE181
MJE 172, MJE 182

Collector Cutoff Current
(VeB = 60 Vde, IE = 0)
(VCB = 80 Vde, IE = 0)
(VCB = 100 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TC = lS0oC)
(VCB = 80 Vde, IE = 0, TC = lS0oC)
(VCB = 100 Vde, IE = 0, Te = lS0oC)

"Ade

IC80
MJE 170,
MJE171,
MJE172,
MJE 170,
MJE171,
MJEl72,

-

MJE 180
MJE 181
MJE182
MJE 180
MJE181
MJE182

-

-

Emitter Cutoff Current
(VBE = 7.0 Vde, IC = 0)

lEBO

mAde

"Ade

ON CHARACTERISTICS,
-

DC Current Gain
IIC= 100 mAde, VCE = 1.0Vde)
IIc = SOO mAde, VCE = 1.0 Vde)
(IC= 1.SAde, VCE = 1.0Vde)

hFE

Collectof·Emitter Saturation Voltage
IIC = SOO mAde, IB = SO mAde)
IIC = 1.S Ade, IB = 150 mAde)
IIC = 3.0 Ade, I B = 600 mAde)

VCE(sat)

Base-Emitter Saturation Voltage
IIC = I.S Ade, IB = lS0 mAde)
IIC = 3.0 Ade, IB = 600 mAde)

VBE(sat)

Base-Emitter On Voltage
IIC = SOO mAde, VCE = 1.0 Vde)

VBE(on)

-

Vde

Vde

Vde

DYNAMIC CHARACTERISTICS
Current·Gain - Bandwidth Product (tl
IIC = 100 mAde, VCE = 10 Vde, f test
Output Capacitance
(VCB = 10 Vde, IE = 0, f
(1)

= 0.1

MHz

fT

= 10 MHz)

Cob
MHz)

MJE170/MJEl72
MJE180/MJE182

pF

fr = Ihfe I- ftest

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

FIGURE 3 - TURN·ON TIME
300

VCC
+30 V

H

100

RC

+~] --1--,
-9.0 V

tr,tf~l,Ons

-=

~

VCC=30V _ '--Icila= 10
VaEloff)- 4.0 V ::
TJ = 25 0 C- f::=;

h"

==

SCOPE

RS

51

I II

200

:g

50

w

30

'";::..:

01

,1/

20

".

-=

7.0
5.0

01 MUST SE FAST RECOVE RY TYPE, eg:
MB05300 USED ABOVE IB =100 mA
MSD6100 USED BELOW IB =100 mA

3.0
0.03

.......

' ......

td
10

-4V
DUTY CYCLE = 1.0%
RS and RC VARIED TO OSTAIN DESIRED CURRENT LEVELS

""-

r-.....

f'

PNP MJE170/MJE172

I I I I I I I NP~ MJ~IBO/MtEl~2
0.05 0.07 0.1

0.2

0.3

0.5

0.7

1.0

IC, COLLECTOR CURRENT (AMP)

For PNP test circuit, reverse all polarities.

1-798

2.0

3.0

MJE170, MJE171, MJE172, PNP MJE180, MJE181, MJE182 NPN

FIGURE 4 - THERMAL RESPONSE

1.0
0.7 -=-D=0.5
....10 0•5

~
0.05
22
wC;;~ O.

.....-

-

~~O.O

~~

;~

a~O.05 ~
~'"

0.03

~

BJC(I) = rmBJC
BJC' 100 Cm Max

P(~k)JUl 1= ==E CURJESA~L~F~R'POWER=
= -=
l
~~~
,-r-- ~J(Pk)"I i
~JCI(tll
I;:::::

~0.02
~0.01

~O (rIN~L~ p~LrE"
I

;:::::;:::::

I I III
0.05
0.1

0.2

0.5

I
2.0

1.0
I,

I

I

-

TC P(P,k)

DUTY CYCLE, D =11/12

0.02
0.0 1
0.02

D
PULSE TRAIN SHOWN

1- r- READ TIME ATtl

I IIIII
5.0
10

I
20

I

I I II
50
100

200

TIME (m.)

ACTIVE-REGION SAFE OPERATING AREA
FIGURE 6 - MJE180, MJE181, MJE182

FIGURE 5 - MJE170, MJE171, MJE172
10

.'"

10

5.0

S 2.0
~

1.0

15

:::::>

~

F= '

<>
"'.0.05 r-

::

0.02
0.01
1.0

2.0

3.0

1'\

"'

de

- 0.2 r- - - - - - o. 1 E

~

1/

0.5

'"
'"
<>

.

100 ~St

....
.........

500~s

loo~~m

5. 0

2. 0

~

5.0ms

~ 1.0

a~

O.5

"-'"

.....
de

500~s

~

TJ = 150°C
BONDING WIRE LIMITED
'" 2 - _____ THERMALLY
LlMITED@
.... O.
TC = 25°C (SINGLE PULSE)
O. 1::===
SECOND
BREAKDOWN
LIMITED
<>
~o.o
CURVES APPLY, i~W
RATED VCEO
MiE180
0.0 2

TJ = 150°C
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @ ~
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCED -MJE170
MJEl7l
MJEI72
5.0
10
20
30

~

-- -

"

SF

II II

50

~~::~

I I II

0.0 1
1.0

100

2.0

3.0

5.0 7.0

20

10

50

30

70 100

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a

variable depending on conditions. Second breakdown pulse limits

transistor - average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the tran~
sistor that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures Sand6isbasedonTJ(pk) ~ IS00C;TC is

are valid for duty cycles to 10% provided TJ(pk) < 1500C. TJ(pk)
may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.

-

FIGURE 7 - TURN·OFF TIME

1000
700
500

100

Is

30o ......
2001'-..
]w 100
~ 70
50

-=

r-...
i'.

:"

r-

,

1"""--1-..,

,

VCC=30Y!CflB -10
IBI = IB2,.TJ = 25°C

70
~
~

'"
z
«

r"

.....

50

w

~

~
'"

U

- - - PNPMJE170/MJE172
C- I I I I I jPN MIJEljOlMJEi82
0.05 0.07 0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

IC, COLLECTOR CURRENT (AMP)

,

:-....

.......

20

1-

r0-

Or--0.03

TJ= 250C-

r........

30

0

10

FIGURE 8 - CAPACITANCE

10
0.5

0.7

1.0

2.0

' ....

PNP MJE170/MJE172
-NPN MJE1BO/MJE182
II
Cib

'"

r-......
"-

3.0

Cob

.....
5.0 7.0

r- .....
10

VR, REVERSE VOLTAGE (VOLTS)

1-799

r-- "-

-

20

30

50

MJE170, MJE171, MJE172, PNP MJE180, MJE181, MJE182 NPN

PNP

NPN

MJE170, MJE171, MJE172

MJE180, MJE181, MJE182
FIGURE 9 - DC CURRENT GAIN

200
TJ111500c
z

100

rr--

70

25'C

;;:

'"....
ill

=
=

"

~

r'"
....

-55'C

t--

~
0.05 0.07 0.1

0.2

0.3

50

"

30

u

20

0.5 0.7

~

~

~

1.0

2.0

70

ia

"~

-55'C

.....
I'....

20

10
0.03

3.0

VCE=1.0V

-

25'C

z 100

30

10
0.03

_TJ= l~o~C

;;:

50

a
u

-

-...

200

VCE = 1.0 V

0.05 0.07 0.1

0.2

0.3

0.5 0.7

"

"- ~

1.0

"

2.0

3.0

IC. COLLECTOR CURRENT (AMP)

IC. COLLECTOR CURRENT (AMP)

FIGURE 10 - "ON" VOLTAGES
1.4

1.4

I- TJ = 25'C

~

1.2

S 1.0
"

~

'"
'"
~

">>-

1. 2

-

V~E(~t) ~ IC/l8' 10

o.B

./

~

~

";;;>

V

0.4

. / ./
V

Ic/le=~

0.2

I-

o

0.03

VCE(sa.)

I
0.05 0.07 0.1

0.2

0.3

0.5 0.7

1.0

2.0

./

.

1/

o.4
VCE(sat)@ Ic/lB = 5.0 and 10

0
0.03

3.0

v

o.6f- VSE @VCE=1.0V

O.2

Ic/le = 5.0

/

I

VBE(sa')@ IC/IB - 10

~ o.S

/

isdc

IIJ

o

I

0.6 f- VBE @l VCE=1.0V

I

~ 1. 0

/

TJ I=

0.2

0.05 0.07 0.1

IC. COLLECTOR CURRENT (AMP)

0.3

./

-

0.5 0.7

1.0

2.0

3.0

IC. COLLECTOR CURRENT (AMP)

FIGURE 11 - T~MPERATURE COEFFICIENTS
U

+2.0

3-

~+1. 0

~
;:;

II
II

'APPLIES FOR Ic/le <: hFE/2

LL II

II II

25 DC to 1500 C

-r~toti'l

8
w

II!

....Gi

-2.0

i
-3.0
0.03

25'C
8ve FOR VeE

II I
II I
0.05 0.07 0.1

./

....

0.2

0.3

to

150'C

....

-55'C to 25'C

8

./ /

~

II!

II I
II I

....

25'Cto~

r-

~ -2. 0

i
2.0

3.0

IC. COLLECTOR CURRENT (AMP)

-3.0
0.03

Bye FOR VeE

II II
IIII
0.05 0.07 0.1

-550C.o 2~ot

I I III
0.2

0.3

1111

0.5 0.7

IC. COLLECTOR CURRENT (AMP)

1-800

./

f..--" V

I III . /

'"
g;-1.0

-55 DCto +25 0 C

V

+ttT

'8VC FOR VCE(sat)

~

/

250 C to 1500 C

II II

ili
;:;

J..t V"

0.5 0.7 1.0

II II

;; +1.0

7-

11111
11111

'APPLIES FOR IC/IB <: hFE/2

3-E

-ttr

'8VC FOR VCE(sa')

$
g;-1.0
~

+2.0
u

1.0

2.0

3.0

®

IJE280 NPN
IJE210 PNP

MOTOROLA

III

COMPLEMENTARY SI LICON POWER
PLASTIC TRANSISTORS

5AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON

. designed for low voltage, low·power, high-gain audio amplifier
applications.
•

COllector-Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAde

•

High DC Current Gain -

•

Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAde
= 0.75 Vdc (Max) @ IC = 2.0 Ade

•

High Current-Gain - Bandwidth Product fT = 65 MHz (Min) @ IC = 100 mAde

•

Annular Construction for Low Leakage - ICBO =100 nAde@ Rated VCB

25 VOLTS
15 WATTS

hFE = 70 (Min) @ IC = 500 mAde
= 45 (Min) @ IC = 2.0 Ade
= 10 (Min) @ IC = 5.0 Adc

MAXIMUM RATINGS
Rating
CollectofMBase Voltage
COllector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous

Symbol

Value

Unit

Vce

40

Vdc

VCEO

25

Vdc

VEe

8.0

Vdc

IC

5.0
10

Adc

Peak

Base Current

Ie

1.0

Adc

= 25°C

PD

15
0.12

Watts

Total Power Dissipation @ T A = 25 0 C

PD

1.5
0.012

Watts

-65 to +150

°c

Total Power Dissipation @TC
Derate above 256 C

Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ,Tstg

W/oc

-:-tH

K

W/oC

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

8JC

8.34

°C/W

Thermal Resistance, Junction to Ambient

8JA

83.4

°C/W

Characteristic

STYLE I
PIN 1. EMITIER
2. COLLECTOR
3. BASE

FIGURE 1 - POWER DERATING
6

1.6

h
2

~

1

f'...
~

0

0

" I'

0

~

o
20

0

~

40

60

100
120
80
T. TEMPERATURE I'CI

140

0
160

MILLIMETERS
DIM MIN MAX
A 10.80 11.05
B
7.49
7.75
C
2.41
2.67
0
0.51
0.66
2.92
F
3.18
G
2.31
2.46
1.27
H
2.41
0.S4
J
0.38
K 15.11 16.64
30 TVP
M
Q
4.01
3.76
R
1.14
1.40
S
0.S4
0.89
U
3.94
3.68
V
1.02

INCHES
MIN MAX
0425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.125
0.11
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
30 TYP
0.148 0.158
0.045 0.055
0.035
0.02
0.145 0.155
0.040

CASE 77-04

TO-l26

1-801

MJE200, NPN MJE210 PNP

ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)

I

I

Characteristic

Svmbol

Min

Max

Unit

VCEO!sus)

25

-

Vdc

-

100
100

nAdc
pAdc

-

100

70
45
10

180

-

0.3
0.75
1.B

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
IIC= 10mAdc,la=0)
Collector Cutoff Current
(Vce = 40 Vdc, IE = 0)
(Vca=40Vdc,IE=O, TJ= 1250 C)

Icao

Emitter Cutoff Current
(VaE = 8,0 Vdc, IC = 0)

IEaO

nAdc

ON CHARACTERISTICS
DC Current Gain (1)
IIC = 500 mAdc, VCE = 1.0 Vdc)
IIC = 2.0 Adc, VCE = 1.0 Vdc)
IIc = 5.0 Adc, VCE = 2.0 Vdc)

-

hFE

Collector-Emitter Saturation Voltage (1)
IIc = 500 mAde, la = 50 mAde)
IIC = 2.0 Adc, I a = 200 mAde)
(IC = 5.0 Ade, la = 1.0 Adc)

VCE!sat)

aase-Emitter Saturation Voltage (1)
IIC = 5.0 Adc, la = 1.0 Adc)

VaE(sati

-

aase-Emitter On Voltage (1)
(lC = 2.0 Adc, VCE = 1.0 Vdc)

VaE(on)

fT

Vdc

-

2.5

Vdc

-

1.6

Vdc

65

-

MHz

-

80
120

DYNAMIC CHARACTERISTICS
Current-Gain - aandwidth Product (2)
(lC = 100 mAde, VCE = 10 Vdc, f test = 10 MHz)
Output Capacitance
(Vca = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse test: Pulse Width
(2) fT = hfel • ftest

I

=

300

jlS,

pF

Cob
MJE200
MJE210

-

Duty Cycle'" 2.0%.

FIGURE 2 - SWITCHING TIME TEST CIRCUIT

FIGURE 3 - TURN-ON TIME
300

+30 V
VCC

H
+~]

200

RC

--1--,

SCOPE

RB

~

..

-9.0 V

51
I r• It::::10

ns

DUTY CYCLE = 1.0%

100

-=

Dl

-4 V

>=

~

I~~~: ~~ V _

I'...

TJ=25 0 C-

t,

10
50

20

.....

.......

30

"
-jd l@m!Ofl)i

.........

5.0( '

-=

10

RB and RC VARIED TO OBTAIN OESIREO CURRENT LEVELS

1.0

01 MUST BE FAST RECOVERY TYPE, .g.
MB05300 USEO ABOVE IB =100 mA
MSD6100 USED BELOW IB =100 mA

-

--,...1--

.........

I--"

MJE200 (NPN)
MJE210 (PNP)

5.0
3.0
0.05 0.01 0.1

FOR PNPTEST CIRCUIT, REVERSE ALL POLARITIES

0.2

0.3

0.5

0.1

1.0

IC. COLLECTOR CURRENT (AMP)

1-802

2.0

3.0

5.0

MJE200, NPN MJE210 PNP

FIGURE 4 - THERMAL RESPONSE
1.0

.,z

w

~W_.

o. 7~
o.5

0=0.5

0.3 f - -

I-- 0.2

~c O.2f-- f:-b.1

"w

.. !:!

~:i o. I
:: :5 0.07

~~O.O 5
;;;
,.--

0.03 -

:
I-

-'

~

~

0:-'

""'"

--

6001-

"HlJl-f-~JC(t)-r(t)~JC
k)
-r-~JC-8.340C/WMax-1--

p(

I

P

t

.0

:S~.01
D(SiNGLE PULSE)

I I I I II

=0 CURVES APPLY FOR POWER=
-PULSE TRAIN SHOWN
READ TIME Attl

~

'2

-

OUTY CYCLE. 0 = 11/12

TJ(t)

I I

TIC PIP!' tJC(t)

-

0.02

"'2

I

0.0 I
0.02

I

I

0.05

I
0.1

0.2

0.5

IIII
10

I
5.0

2.0
I. TIME (ms)

1.0

I

I
20

50

IIIII
100

200

FIGURE S - ACTIVE REGION SAFE OPERATING AREA
0
500 lIS

7.0

§"
~

....

z

~

5.0

......

3.0

de

2.0

.J

0:

.,:::>
a:

o

~
_

8

E

"'-100;::

1.0-;"1:

+O~s

. . , '"
'-

O. 1
1.0

average Junction temperature and second breakdown.
Safe operating area curves Indicate le·VeE limits of the tranSistor
that must be observed for reliable operation; I.e., the tranSistor
must not be subjected to greater dissipation than the curves Indicate.
The data of FigureS IS based on TJ(pk) = 150°C; TC IS v.".ble
depending on conditions. Second breakdown pulse hmlt~ are valid
for duty cycles to 10% provided T Jlpkl';;; IS00C. T J(pk) may be
calculated from the data In Figure 4. At high case temperatures,
thermal limitations Will reduce the power that can be handled to

ir1\. . r'\. r\'"

TJ = 150°C
BONDING WIRE LIMITED
- - THERMAllY LlMITED@TC=25 0C
(SINGLE PULSE)
~--- SECOND BREAKDOWN LIMITED
CURVES APPLY BELlOW
0.3
RATED VeED
0.2

E ---

1.0
7~ O. f0.5

There are two limitations on the power handling ability of a

tranSistor

2.0
3.0
5.0
7.0
10
VCE. COLLECTOR·EMmER VOLTAGE (VOLTS)

"

20

values less than the limitations imposed by second breakdown

30

FIGURE 7 - CAPACITANCE

FIGURE 6 - TURN·OFF TIME
1000
700
500
300
200

--

t--....

I" :-...

~ 100
;::

0

----

10

II

0

0.05 0.07 0.1

I-t-

Vec - 30 V'
ICIIB-l0
181 = 182 _
TJ=250e _

Is t--. ...

No

....

I

...... t--..

If

0

0

=
=

200

....

MJE200 (NPN)
MJE210 (PNPI

""'"

1-1- t"~

.,w

-''''

-

z

"

100

-.

0

-,....

I-

<3

.,~

0

Or-

-

- - MJE200 INPN)
1111MJrr)

0.5 0.7 1.0
0.2 0.3
IC. COLLECTOR CURRENT (AMP)

2.0

3.0

5.0

1-803

20

0.4

r--.

1"-1-

u

1"'-1-

ttc

t'-i-,....

l"""-

0.6

1.0

-

2.0
4.0 6.0
10
VR. REVERSE VOLTAGE (VOLTS)

Cob

f.-

r-;;

t-~

20

40

MJE200, NPN MJE210 PNP

NPN

PNP

I

MJE200

MJE210

FIGURE 8 - DC CURRENT GAIN
400

z

«

200

",

I

'"

-55!C

::>

100
80

~

60

!.>

'"
~
.... ~

25!C

IZ

~
a:

400

TJ = 150aC

II

20
0.05 0.01 0.1

~ 100
a:
80

"

r-,

-55aC

B
!.>
0

;

~

2.0

25JC

'"

\\

0.2 0.3
0.5 0.1 1.0
IC. COLLECTOR CURRENT lAMP)

200

IZ

",' ~
~~

--VCE=1.0V
- - - VCE= 2.0 V

I

«

.~

ul

~ 40

z

II

fJI'150AC

3.0

60
40

II I

20
0.05 0.01 0.1

5.0

~"\.

,::-.

~.

:"- ~~ \'

- - VCE=I.0V
- - - VCE = 2.0 V

0.2 0.3
0.5 0.1 1.0
IC. COLLECTOR CURRENT (AMP)

2.0

'"\

......,~~

""

3.0

5.0

FIGURE 9 - "ON" VOLTAGE
2.0

2.0
ITl! !5ac

1.6

S 1.2
~

~

0

0.8

,;
0.4

o

~

VaEI"I)@ Icila = 10

~aF ~ VCE," I.~ V

vlc~!sal) @ICilJ = 10

0.05 0.01 0.1

V

.....

0.2 0.3
0.5 0.1 1.0
IC. COLLECTOR CURRENT lAMP)

c

~

~

w

>

~

~~

0

'"

tl=12~ac

,1.6

1.2

w
to

«

~
c 0.8
>
>'

....- . /
2.0

0.4

3.0

o

5.0

::;:;-

VaElsal)@IC/IB= 10

k:::: ?'

VBE@VCE=1.0J
I-'ll
I I
CW)@IC)IB=1 10

0.2 0.3
O.S 0.1 1.0
IC. COLLECTOR CURRENT lAMP)

2.0

~

/

/"

......... V"

J

O.OS 0.01 0.1

~

/

3.0

S.O

FIGURE 10 - TEMPERATURE COEFFICIENTS
+2.5
G

+2. 5

.IAWES FO~ Icil8" hlFE/31

~ +2.0

5;

+2.0

~

+1.5

.5

~ +1.0
U

f5

:>
~

I-

~ +0.5

8

w

rr

~a:

il!!

2S aC 10 150 aC

.-"

-5~aW2~ac

-0.5

25a C10 150 aC

-1.5

BVB for VBE

I II

-2.5
0.05 0.07 0.1

-H111

II I

----

/

I
.lovc

V

I

LV~EI"I)

8

z'socJsoJ
II

Z 11-1

1....- r""""

t.-'

-n._ i--ssoc 10 2SOC

::>

/

~
!~

3.0

-1. 5

:

-2. 0

'"

-2. 5·

5.0

25°C to 150 0 C...........

-1. 0

-

BVB for VSE

-

~

.,.-

-55°C 10 2S a C

I

0.05 0.01 0.1

0.2

0.3

0.5 0.7

1.0

2.0

IC. COLLECTOR CURRENT lAMP)

1-804

/

. / ./

w

-550C to 25°C

2.0

~~P~~IES
FJR I1II "t I
I
I I B I FE/3

a: -0.5

"./ / '

0.2 0.3
0.5 0.7 1.0
Ic. COLLECTOR CURRENT (AMP)

+1.0

$U +0.s

/
./

-1.0

:> -2.0

'"

./7
BVC for VCEI..I)

+1. 5

3.0

5.0

MJE205

®

MOTOROLA

III
MEDIUM-POWER NPN SILICON TRANSISTOR

5 AMPERE
POWER TRANSISTOR
NPN SILICON

.. for use as an output device in complementary audio amplifiers

up to 20-Watts music power per channel.

50 VOLTS
65 WATTS

- High DC Current Gain - hF E = 25-100 @ I C = 2.0 A
-Thermopad High-Efficiency Compact Package
-Complementary to PNP MJE 105

MAXIMUM RATINGS
Rating
Collector·Emltter Voltage

Symbol

Value

Unit

Vceo

50
50
4.0
5.0
2.5
65
0.522
-55 to +150

Vde

Collector-Sase Voltage

VCS

Emitter-Base Voltage

Base Current

Ves
Ie
IS

Total Device Dlsslpatlon@TC=25 u C

PDt

Collector Current

Derate above 25°C
Operating and Storage Junction

Temperature Range

TJ, T stg

Vde
Vde

Ade
Ade
Watts
W/oC

DC

THERMAL CHARACTE RISTICS
Characteristic
Thermal Resistance, Junction to Case
tSafe Area Curves are indicated by Figure 1. 80th limits are applicable and must be observed.

STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

ELECTRICAL CHARACTERISTICS ITe = 25 0 e unless otherwISe noted 1
Characteristic

Symbol

I

Min

I

Max

Unit

OFF CHARACTERISTICS
COllector-Emitter Breakdown Voltage:!:

SVCEOt

IIc = 100 mAde, IS = 01
Collector Cutoff Current

(VCS
(VCS

(VSE = 4.0 Vde, IC = 01

-

-

mAde

ICSO

= 50 Vde, IE = 01
= 50 Vd~, Ie = 0, TC=1500CI

Emitter Cutoff Current

Vde

50

-

0.1
2.0

-

1.0

25

100

-

1.2

lEBO

mAde

ON CHARACTERISTICS
DC Current Gain

-

hFE

IIc = 2.0 Ade, VCE = 2.0 Vdel
Base·Emitter Voltage

INCHES
MIN MAX
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0,148
0.166 ase
0.105 0.115
0.032 0_034
0.595 0.645
90 TYP
0.185 0,195
0-075 0.085
0,245 0.255
0.080

Vde

VSE

IIc = 2.0 Ade, VCE = 2.0 Vdel

MILLIMETERS
DIM MIN
MAX
A 16.13 16.38
B
12.57 12.83
C
3.18 3_43
0
1.09 1.24
F
3.51 3.76
4_22 asc
G
2.67 2.92
H
0.813 0.864
J
15.11 16.38
K
90 TYP
M
Q
4.70 4.95
R
1.91 2.16
U
6.22 6.48
V
2.03

CASE 90-05

TO·127

+Pulse Test: Pulse Wldth~300 tJs, Duty Cycle~2,O%,

1-805

MJE205

IIJ
FIGURE 1 - ACTIVE REGION SAFE
OPERATING AREA
I0

-- t=:t=

7. O~TJ - 1500 C
~ 5. O~_ t--f--

-

t- t- -

~ 3. 0

~

,

....

~ 2. 0

'"B
'"o

~

.3

~

.2

There are two lImItatIons on the power handling abilIty of a

~

transistor; average Junction temperature and second breakdown
Safe operating area curves Indicate Ie . VeE limits of the transIstor

'I\sOm,

that must be observed for relIable operation, t.e . the tranSIstor must
not be subjected to greater dISSIpation than the curves IndIcate

U

LD

1.0 p _____ THERMAL LIMIT @TC" 25 0 C 7~'
BONOING WIRE LIMIT
'5
SECONO BREAKOOWN LIMIT
D.

B

Note 1:

100",

,

The data of Figure 11s based on TJ{pkl

==

150°C; TC Isvanable

depending on condItIons Second breakdown pulse limIts are valid
for duty cycles to 10% prOVided T J(pk) :o;;1500 C At high case
temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations Imposed by second
breakdown.

de

Ii

-.l

o1
1.0

2.0

5.0

3.0

70

10

20

50

30

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 2 - "ON" VOLTAGES
20

FIGURE 3 - DC CURRENT GAIN
5.0

I!II

18

ffi

TJ' 25 0 C

~

0

2

..
w
to

'"'o"
~

/,
V;

1.0

~ 08

0

>

~

1.4
1.2

z

VBE(,.,)@ICIIB" 10

0.4
0.2
'0
0.01

1=

~

II II b--'V

II

VCEI..!)@ IC Ie" 10
0.02 0.03 0.05

0.1

'"ffi

I-r-::::
VeE@ VCE" 2.0 V

:ttl1l

0.2 03

0.5

a

lL

1.0

25 0 C I

V

.........

"",I--"'"

0.3

~
~

50

o. 1
om

0.02 0.03

0.05

0.1

FIGURE 4 - POWER DERATING
60

..

50

z

40

>=
;t
~

30

~

'"

20

~

10

~

0

~
~

~

.........

"-

"'"

C

.........
.........

1e

0

25

i ........

0.5

0.2 0.3

0.5 0.7 1.0

IC, COLLECTOR CURRENT (AMPS)

I"'-

.......

-55 0 C

IC, COLLECTOR CURRENT lAMPS)

65

r-.....

..I.

~ 0.2
W

10 30

1.0

2.0

VCE"2.0V -

TJ-150oC

...... ~

=

f--

=
=F=

1000

]

100

r.....

Z

"'-

If

0'- '--'MJE1401MJEl44 (NI'II)
- - - MJE2501MJE254 (PNP)
10
0.04 0.06
0.1
0.1
0.4

,
0.6

~

0

;3
u

0

~

"-

7a

50

0

U

0

1.0

2.0

4.0

a
1.0

-

- --

FIGURE 7 - CAPACITANCE

I

Cib

--

Co~ "-

r-- . . .

H+_

- - -MJE240/MJE144INPNI
--MJE250IMJE154IPNP)
2.0

3,0

T}= 251o C

I

r--~

5.0

7.0

r"-I-

"
10

10

VR. REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPI

1-809

30

50

70

100

MJE240 thru MJE244, NPN,
MJE250 thru MJE254, PNP

NPN

PNP

I

MJE240 thru MJE244

MJE250 thru MJE254

FIGURE 8 - DC CURRENT GAIN
500

200

300 -

T -1500C

--

200

z

c:J

~
~
~

70 -

~

I'~

100

-55°C

70

~ I~

~

30

~

2a
10
7.0
5.0
0.04 0.06

~
0.1

0.2

0.4

0.6

1.0

2.0

-

50

VCE = 2.0 V

-

-55°C

~

~~~

......

'

a
'"c
~

10

,
~

~'!o

7.0

5.0
3.a

2. a

4.0

0.04 0.06

0.1

0.2

IC, COLLECTOR CURRENT lAMP)

0.4

0.6

1.0

2.0

4.0

IC, COLLECTOR CURRENT lAMP)

,

FIGURE 9 - " N" VOL TAGES
1.4

I-

tJ ~ ~Joc

1.2

~

O.S VBElsa'i@ IC/IS = 10

1:::9"

0

6'
11

0.6 VBE@VCE=1.0V

~
~

>
>- 0.4

~II

1-1- VCEI",)
0.04

0.06

U
0,2

0.1

0.4

0,6

Z-

O.s

'"
'"
'::;

"

~510c

I
I II
I II
VBEI.. ')@ IC/IS - 10
VSE@VCE-1.0V

O. 6

--

>
>- 0,4

~

I
I

o

4.0

0.04

0.06

/

//
h

I 1J.d:P' 5.0 t--- ... ::::f't1 I I I
11111 I

rVCElsati
2.0

~

IA'

,...... f-"

IC/l8-1O

O.2

I
I

1.0

.fJ l

0

_lhISI=~:;

0.2

~

1.a

0

.-,:

0

a

'1. 2

V

I II
I II

Z-

"''"'::;"

1.4

//

1.0

-

25°C

~ :~

50

JCE =11.0 V r-

.) II
TJ = 150°C

100

I5=::

25°C

;;:

~~~-~:~~-

0.1

0.2

IC, COLLECTOR CURRENT lAMP)

0.4

0.6

1.0

2.0

4.0

Ic, COLLECTOR CURRENT lAMP)

FIGURE 10 - TEMPERATURE COEFFICIENTS
+2.5

+2.5

~ +2.0
>
.§ +1.5
~
ffi +1.0
<:;
~ +0.5

'APPLIES FOR Ic/IS" hFE/3

/
250~

'eVC FO R VCElsa')

8

'"
~

....

-55°C to 25°£

-0.5

~ -1.0

::!

ifi
....

i

~

-1.5

-2.0

W+Htr

-2.5
0.04 0.06

0.1

0.2

0.4

0.6

./

........;

/
II
J.k::::: ;....-

P

v

8
'"~

-0.5

~

-1.0

~

II
2.0

*
i

-55 DC to 25 0 C

1.0

.§. +1.5
~
~ +1.0
U
+0.5

4.0

IC, COLLECTOR CURRENT lAMP)

J

'APPLIES FOR Ic/IS"hFE 3

~ +2.0

V

I
I

25 DCto 150°C """,.. , /
'eVC FOR VCElsa'

-t1TT

/
./

~15uc to 25 U(;

-1.5

I
eysriRIW-

-2.0
-2.5
0.04 0.06

-

, / ........ V

-55 DCto 250 C

j'I}U I

I II
0.1

/

/

-;::::. ;,-

ri

250 '0 1500

0.2

0.4

0,6

1.0

IC. COLLECTOR CURRENT lAMP)

1-810

/

2.0

4.0

MJE340

@ MOTOROLA
0.5 AMPERE
POWER TRANSISTOR

PLASTIC MEDIUM POWER NPN
SILICON TRANSISTOR

NPN SILICON
300 VOLTS
20 WATTS

... useful for high·voltage general purpose applications .

•

Suitable for Transformerless, Line-Operated Equipment

•

Thermopad Construction Provides High Power Dissipation Rating
for High Reliability

MAXIMUM RATINGS
Symbol

Value

Collector-Emitter Voltage

VCEO

300

Vde

Emitter-Base Voltage

VEB

3.0

Vde

IC

500

mAde

Po

20
0.16

Watts
W/oC

-65 to +150

°c

Rating

Collector Current - Continuous

Total Power Dissipation
Derate above 25°C

@

T C "" 25°C

Operating and Storage Junction
Temperature Range

TJ. Tstg

Unit

K

THERMAL CHARACTERISTICS
Characteristic

STYlE 1

Thermal Resistance, Junction to Case

PIN 1. EMITTER

2. COLLECTOR
3. BASE

ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)

I

Characteristic

I

Symbol

I

Min

I

Max

I

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

VCEOtsus)

300

-

Vde

ICBO

-

100

/JAde

lEBO

-

IIC = 1.0 mAde, l!i = 0)
Collector Cutoff Current

tVr.R = 300 Vde, IF = 0)
Emitter Cutoff Current
tVEB = 3.0 Vde, IC ~ 0)

100

/tAde

R
S
U
V

30 TYP

3.76
1.14
0.64
3.68
1.01

4.01
140
0.89
3.94

30 TYP

0.148
0.045
0.015
0.145
0.040

CASE 77·04
TO-126

DC Current Gain

= 50 mAde, VCE

M

n

ON CHARACTERISTICS
IIc

INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
1080 11.05 0.415 0.435
749
775 0195 0.305
141
1.67 0.095 0105
o 0.51 066 0010 0.016
F
191
3.18 0.115 0.115
G
1.31
1.46 0.091 0.097
H
1.17
141 0.050 0.095
J
0.38
0.64 0.015 0.015
K
15.11 16.64 0.595 0.655

DIM
A
8
C

= 10 Vdc)

1-811

0.158
0.055
0.D35
0.155

MJ.E340

FIGURE 1 - POWER TEMPERATURE DERATING

FIGURE 2 - "ON" VOLTAGES

32

i
z

!2

fa~

CI

i

I

1.0

28

l JJ

4
0

...........

16

~

'"

L

.L

~

0

>

:>

~

4. 0

.............
40

0.4

II
VeE@VcPl0V

to

...........

MJE340~

20

.

II

w

'" 8.0

0

O.B

1--- ............ ...,.

Illl!

2:

.........

2

0

II

~Bi (S~)'@ ~~I~ = 10

TJ = 25°C
0.8

V

I-'"

ICl'e=r

:-....

140

120
100
80
Tc. CASE TEMPERATURE (OC)

60

~ L

-

Ic/'e = 10

VCE(sat)
0.2

160

30

20

10

200

100

50

300

500

IC. COLLECTOR CURRENT (mA)

ACTIVE-REGION SAFE OPERATING AREA
FIGURE 3 - MJE340
1.0

~

o. 5

IE
w

0.3

0:
0:

...

02

g....

o.1

::J
0:

8

0.05

!:J

0.03

TJ = 150·

. ..

10,..;-s;

-'"

500,...

l.h~
d~

~ili

~

SECOND BREAKDOWN liMIT
- 80NDlNG WIRE liMIT
THERMAL liMIT @TC = 25°C
(SINGLE PULSE)

----

K'" r-

'\.

0.02

~

I I I I I II

0.0 1
10

20

30

50

1'\

100

200

300

VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating
area curves indicate Ie-VeE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected
to greater dissipation than the curves indicate.
The data of Figure 3 is based on T Jlpk) = 1500 C; T C is variable depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJlpkl ~ ISo"C. At high case temperatures. thermal limitations will reduce the power that can be handled to
values less than the limitations imposed bV second breakdown.
FIGURE 4 - DC CURRENT GAIN
300

I

200
TJ

;;:
'"

ffi

~

100

50

~

30

.-

-~ ~~

-

- - ---

r-

0

20

1

+100 oC

70

...a

...1 ...1
- - VCE=10V -

...J-

to

I-

\500~

I

f----

~

i"""

+25 0C

,.....

-55°C

,==,:

I

-"",

- 7= -:..::; .~

~~

·T~.-~-"

~~

~

.".

10
1.0

2.0

3.0

5.0

7.0

10

20

30

IC. COLLECTOR CURRENT (mAde)

1-812

50

70

100

-

- ",

1\........

-

r--

VCE = 2.0 v

~

,.....

~~

-- -

-

200

~~ ~
l~~

1\ \ 1\"
300

500

®

MJE341
MJE344

MOTOROLA

0.5 AMPERE
POWER TRANSISTORS
NPN SILICON

PLASTIC NPN SILICON
MEDIUM-POWER TRANSISTORS

150-200 VOLTS
20 WATTS

... useful for medium voltage applications requiring high fT such as
converters and extended range amplifiers.

MAXIMUM RATINGS
Symbol

MJE341

MJE344

Unit

VCEO

150

200

Vde

Collector-Base Voltage

VCS

175

200

Vde

Emitter-Base Voltage

VES

3.0

5.0

Rating
Collector-Emitter Voltage

Vde

IC

-500-

mAde

Base Current

IS

_250_

mAde

Total Power Dissipation @TC=2SoC
Derate above 2SoC

Po

20
0.16

W/oC

T J.T stg

_ - 6 5 to +150_

°c

Collector Current - Continuous

Operating and Storage Junction

Watts

Temperatu re Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

Symbol

Max

Unit

6JC

6.25

°C/W
K

FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA
I.0

5IIO ..

5

2
1

"

TJ -1500C

--- --

\'1.0""

2D

6D

1.11)

1\

SECOND BREAKDIJIItj LIMIT
BONDING WIRE LIMIT
THERMAL lIMIT@TC'_

STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE

de

[02

0.01
10

f-

1.11)

111\

"

2DD

3DD

VCE. COLLECToR·EMITTER VOLTAGE IVOLTS)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk)

=

15o"C; TC is

variable depending on conditions. Second breakdown pulse limits

are valid for duty cycles to 10% provided TJ(pk) .;;; 150"<:. At
high case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by
second breakdown.

1-813

MILLIMETERS
DIM MIN MAX
A IO.BO 11.05
B
7.49
7.75
C
2.41
2.67
o
0.51
0.66
F
2.92
3.18
G
2.31
2.46
H
1.27
2.41
J
0.38
0.64
K
15.11 16.B4
M
U

R
S
U
V

INCHES
MIN
MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655

30 TYP

3.76
1.14
0.64
3.68
1.02

4.01
1.40
0.89
3.94

0.148
0.045
0.025
0.145
0.040

CASE 77·04
TCJ.126

0.158
0.055
0.035
0.155

MJE341, MJE344

-

ELECTRICAL CHARACTERISTICS (TC

=

25°C unless otherwise noted)
Symbol

Characteristic

Min

Max

150
200

-

-

1.0

-

1.0

-

0.3

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

(lC

MJE341
MJE344

Collector Cutoll Current
(VCE = 150 Vde,IB = 0)
(VCE

= 200 Vde, IB = 0)

= 200 Vde,

mAde

ICBO
MJE341
MJE344

= 0)

IE

mAde

ICEO
MJE341
MJE344

Collector Cutoll Current
(VCB = 175 Vde, IE = 0)
(VCB

Vde

VCEO(sus)

= 1.0 mAde, IB = 0)

0.1
mAde

Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)

MJE341

-

0.1

= 5.0 Vde,

MJE344

-

0.1

20

-

25
30

200
300

20

-

-

1.0

(VEB

IC

lEBO

= 0)

ON CHARACTERISTICS
OC Current Gain
(lC = 10 mAde, VCE

-

hFE

= 10 Vde)
= 10 Vde)

(lc

= 50 mAde, VCE

(lC

= 150 mAde, VCE = 10 Vde)

MJE341
MJE341
MJE344
MJE341

Collector-Emitter Saturation Voltage

Vde

VCE(sat)

= 50 mAde, IB = 5.0 mAde)
(IC = 150 mAde, IB = 15 mAde)

(lC

MJE344
MJE341

Base-Emitter On Voltage
(lC = 50 mAde, VCE = 10 Vde)

-

2.3

VBE(on)

-

1.0

Vde

IT

15

-

MHz

Cob

-

15

pF

hie

25

-

-

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product

(lC

= 50 mAde, VCE = 25 Vde, I = 10 MHz)

Output Capacitance
(VCB = 20 Vde, IE

= 0, I = 100 kHz)

Small-Signal Current Gain

(lC

= 50 mAde, VCE = 10 Vde, f = 1.0 kHz)

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 - "ON" VOLTAGES

300
1--1z

~

a
:#

70

~

.

'

.,.-

30 1.,.001-"'

-

-550Ct""'"

.

I-""
1.0

"\''''

0,6

~

0.4

o

5.0 7.0' 10

20

30

50 70 100

@

VCE' 10V

-..,

II
1-.......... ~
r-- V

/

/

.I
~

O. 2

VCE(satiICliS = 10

,....Ic/l~

\
2.0 3.0

VSE

>

t-- ).
1\

20

10

~

1111
I

o

~
w

I II

Vsti~~

O.S

+250 C

50

.[1. .1

--- VCE = 10V

TJ = +1500C

-

~

0

+25 0 C to +100 OC

g -1.6

"-

300

300

I I I+100 Cto +150 C

'"Applies tor Ic/lB < hFE/4

: JJ'OVCJI VCElsat)

ffi

u

50
70
100
200
VCE. COLLECTOR·EMITTERVOLTAGE (VOLTSI

200

FIGURE 4 - TEMPERATURE COEFFICIENTS
+1. 2

~

'I.Om

"-

~

VCEI"I)

......

"-

II

V

0
5.0 7.0

500

500~,

200

-

ICIIS'IIO/f-

2

-

r...

300

O. 4

>
>'

~.

FIGURE 3 - ACTIVE-REGION SAFE OPERATING AREA
1000
70 0
100",
500

-

O. 6

'-'t\.

50 70 100
20
30
IC. COLLECTOR CURRENT (mAl

VBE@VCE'IOV

w

f'

......

:::::I-

,-'"
VBEI"tl@ICIIB' 10

V

..--- Vi--'

-2. 8
5.0

r

OVB for VBE

I

-15°C tol +25 C

II

I II
7.0

I

10

20

30

50

70

100

IC. COLLECTOR CURRENT

200

300

"

140

500

(mA)

FIGURE 5 - POWER DERATING

0

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.

S.fe operating area curves indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; i.e .• the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 3 is based on T J(pkl : 150°C; TC is variable
depending on conditions. Second breakdown pulse I imits are valid
for dutv cvcles to 10% provided TJlpk) "150°C. At high case

temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.

~
....
«
a;

'"

6

z
c
;::

2

El;:;

8. 0

"-

"'"

:t
'"

~

~

4.0

"-

"I'"

"-

l---0

1-816

'"

20

40

60
80
100
120
TC. CASE TEMPERATURE (OC)

1'-..
160

®

MJE370
MOTOROLA

l1li
PLASTIC MEDIUM-POWER PNP
SILICON TRANSISTOR

3 AMPERE
POWER TRANSISTOR

· .. designed for use in general-purpose amplifiers and switching
circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
•

DC Current Gain - hFE = 25 (Mini

•

Complementary to NPN MJE520

@

PNP SILICON
30 VOLTS
25 WATTS

IC = 1.0 Adc

MAXIMUM RATINGS
Symbol

Value

VCEO

30

Vde

Collector-Base Voltage

Vce

3p

Vde

Emitter-Base Voltage

VEe

4.0

Vde

IC

3.0

Ade

Rating

Collector-Emitter Voltage

Collector Current - Continuous
- Peak

Unit

7.0

Base Current - Continuous

Ie

2.0

Ade

Total Power Dissipation@Tc = 2SoC

Po

25
0.2

Watts
W/oC

TJ. T stg

-65 to +150

Derate above 2SoC
Operating and Storage Junction
Temperature Range

°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Aesistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC
Characteristic

STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE

= 25 0 C unless otherwise notedl

Symbol

I

Min

Max

Unit

Collactor-Emittar Sustaining Voltage 11) VCEO(sus)
IIc = 100 mAde. IB = 0)

30

-

Vde

Collector-Base Cutoff Current
(VCB = 30 Vde. IE.= 0)

ICBO

-

100

pAde

Emitter-Base Cutoff Current
(VEB = 4.0 Vde, IC = 0)

lEBO

-

100

pAde

OFF CHARACTERISTICS

ON CHARACTERISTICS

DC Current Gain
(IC = 1.0 Ade, VCE = 1.0 Vdel

MILLIMETERS
DIM MIN MAX
A 10.80 11.05
7.49
B
7.75
1.41
C
2.67
0.51
0.66
0
2.92
F
3.18
2.31
2.46
G
1.27
2.41
H
0.64
J
0.38
K 15.11 16.64
30 TYP
M
n 3.76 4.01
R
1.14
1.40
0.89
S
0.64
3.68
3.94
U
V
1.02

INCHES
MIN
MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.015 0.025
0.595 0.655
30 TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040

CASE 77-04
T0-126

(1) Puis. Test: Pulse Width ~300 ",I, Ou,tv Cycle ~2.0".

1-817

MJE370

FIGURE 1 -

0

-

1--E

5.0

t-

3,0

~

2. 0

~

ACTIVE,REGION SAFE OPERATING AREA

-

- r-

Ther. are two limitations on the power handling ability of a

-

1---

1.Oms

5.0ms

...

dc'

...

TJ=150oC

0:

13

'I

1. 0

0:

o

~

o.5
8
!2 o. 3

-

-

1

transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie . VeE limits of the transistor
that must be observed for reliable operation; i.e .• the transistor
must not be subjected to greater dissipation than the curves indicate.

-

The data of Figure 1

..........

I

SECOND BREAKDDWN LIMITED
BONDING WIRE LIMITED

-

based on TJ(pk)

:= 150°C; TC is

variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ)pk) ~ 150°C. At
high case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by
second breakdown.

THEtLjY L1tITIEDnCIToc

o. 2

I

O. 1

2.0

1.0

3.0

III
10

5.0

30

20

VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)

FIGURE 3 - "ON" VOLTAGE

FIGURE 2 - DC CURRENT GAIN

.5

1000
700
500

VeE

1.0V

f-+-

1 L It
Bll
TJ

1. 2

~ 300
!Z 200

~

25·C

.I.

II

g§

TJ- +150·C

G 100
g
0
0

9

:""'-t--

II

6

1

V.. @VCE ~ 2.dv

55·C

0

u

o. 3

0

JL

VeE 1,,'1 @Iell, - 10

I III
20 30 50
100 200 300 500
Ie, COLLECTOR CURRENT ImAl

10

~

VBE!,.+)@lc/IB 10

+25·C

10
2.0 3.0 5.0

17

1000

0
2.0 30 5.0

2000

10

20 30 50
100
200 300 500
Ie, COLLECTOR CURRENT ImAI

1000

2000

FIGURE 4 - THERMAL RESPONSE

_ 1.0

~
~

~~

0.5
0.2

2

lil~ o. 1

~ 0.07
0.05

!Z

~ 0.03
~ 0.02

~ 0.01

-

-

0.01

-

0.1
0.05
0.01

~
~t,~
f,

SINGLE PULSE

OUTY CYCLE, 0

I I III
0.02 0.03

0.05

0.1

f,/f,

I
0.2

9JC(tI rltl9JC
9JC = 5.0 crw Max
DCURVESAPPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"
TJ(pkl TC=PlpkI 9JCltI

1:::;:11"

-.....

O. 3

! o.
~

0

o. 7

5. 0

0.3

0.5

1.0

2,0

3.0 5.0
f, TIMElmsl

1-818

I III
10

20

30

50

100

200

300

500

1000

®

MJE371
MOTOROLA

III
4 AMPERE

PLASTIC MEDIUM-POWER PNP
SI LICON TRANSISTORS

POWER TRANSISTORS
PNPSILICON
40 VOLTS
40 WATTS

. . . designed for use in general·purpose amplifier and switching
circu its. Recommended for use in 5 to 20 Watt audio amplifiers uti·
lizing complementary symmetry circuitry.

• DC Current Gain - hFE

=40 (Min) @ IC = 1.0 Adc

• MJE371 'is Complementary to NPN MJE521

MAXIMUM RATINGS
Symbol

Value

Unit

VCEO

40

Vde

Collector·Base Voltage

VCB

40

Vde

Emitter·Base Voltage

VEB

4.0

Vde

IC

4.0

Ade

Rating

Collector·Emitter Voltage

Collector Current - Continuous

K

8,0

-Peak
Base Currant - Continuous
Total Power OiSlipation Gil TC - 25°C
Derate above 25°C

2.0
40
320

Ade
Watts
mWI"C

-65 to +150

°c

IB
Po

Operating and Storage Junction

TJ. Tsts

Temperature Range

THERMAL CHARACTERISTICS
STYLE 1
PIN 1. EMITTER
2. COLLECTOR

Max

Ch• ..-risti.

3.12

Thermal Resistance. Junction to Case

3. BASE

ELECTRICAL CHARACTERISTICS (Tc = 25°C unl... otherwise noted 1

I

Characteristic

I

Symbol

I

Min

I

Max

I

Unit

B

OFF CHARACTERISTICS

C

VCEO(susl

40

Collector-Base Cutoff Current
(VCB = 40 Vde, IE = 01

ICBO

-

Emitter-Base Cutoff Current
(VEB = 4.0 Vd., IC - 01

lEBO

Collector·Emitter Sustaining Voltage (11
tiC = 100 mAde,IB = 01

DIM
A

-

Vde

0
F

8
100

H

"Ade

J
K

-

100

"Ade

Q

R
S
U
V

ON CHARACTERISTICS
DC Current Gain (11
IIc = 1.0 Ad., VCE = 1.0 Vdel

MILLIMETERS
Mil MAX
0.80 11.05
7,49
7.75
2.41
2.B7
0.51
.B6
Z.92
3.18
2.31
2.48
1. 7 2.41
0.38 D.B4
15.11 11.14
3 TYP
3.78 4.01
1.40
1.14
0.
3.B8 3.B4
1.02

INCHES
MIll MAX
10.425 10.435
0.295 0.305
0.0IIS 0.105
O.OZO O.DZS
0.125
11
0.091 0.097
0.095
0.015 0.025
0.58 0.155

P
0.148
0.1MS

0.1
O.

0.145
0.04

0.155

CASEn-04
TO-126

(1) Pul. T ..t: Pul .. Width:S 300",. Duty CycleS 2.0,,"

1-819

MJE371

m

FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA
0

~

100",
1.Oms

5.0

" "
5.0 ""

~"

~ 3.0
~ 2.0

a

r'

TJ-150 C

'"

8

O ~:

~ 0.3

de""

\

hlth ee.. tamperatures, thermal limitations will reduce the power
that cen be hendled to values I... than the limitations impoled by
second br.akdown.

0.2

I

0.1

I I I I I I

2.0

4.0

S.O

8.0

10

20

8vara1J8 junction tamperatur. and second breakdown.

Safe operating .,•• curve. indicate Ie • VeE limits of the tran,lstor
that mUlt ba observed for rallabl. operation; i .•.• the tran,lltor
mutt not b8subJacted to greater dlllipation than the curv.. Indicate.
Tho dote of FIgure 1 1. baHd on TJlpk} • 160°C; TC I.
varlabl. depending on condition,. Second br..kdown pul. limits
ar. valid for duty cycl•• to 10% provided T J'(pk) ~ 1S00e. At

--Bonding Wire limit

~.
Second areakdown Limi.
r-.-----Therm.1 Limi.@Tc=250C

0.5

Ther. ar. two limitation, on the power handling ability of 8

tranlilto,:

40

60

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 2 - DC CURRENT GAIN

FIGURE 3 - ··ON" VOLTAGE

10

~

2.0

7.0
5.0

1=1=

150°C

~ 3.0

i'"

;;:

~

1.0
O.7

~

0.5

.a

VCP 1.0 Vd,

"

~

1.2

~
w

co

~

~

o.2

VaElo .. VCE ·'.OV

III

0.4
I

O. 1
0.01

0.02 0.03 0.05
0.1
0.2 0.3 O.S
1.0
IC. COLLECTOR CURRENT (AMP)

2.0 3.0 4.0

~

VaE(oat} .,c!la -10

0.8

">

.. 0.3

~

~

r--

-550C

TJ-250C

1.6

r--

2.0

Z

c:I

11

TJ - 26°C

0.006 0.01

~~i(oat) .'c!'a = 10

t"'"

0.02 0.03 0.05 0.1
0.2 0.3 0.5
IC. COLLECTOR CURRENT lAMP}

1.0

r2.0 3.04.0

FIGURE 4 - THERMAL RESPONSE

1.0
-w" 0.7 ;::::0 -0.5
N
O. 5
!iii:::;

wi
~~

0.3

'-- rO.2

0.2

-

",-

.. w

-~

rO.l

L

1-:::;...

~~ o.1 =1=0.06
~!ii 0.07 = 0.02

:t!
..... 0.05
~i 0.03

'"~ 0.02

0.0 1
0.01

-o;Ot

B

SlnglePuI.

DUTY CYCLE. 0 = tt/t2

I
0.02 0.03

8JC(t} = rl') 8JC
8JC=3.12oClWM.x

p(Pk}fW
o CURVES APPLY FOR POWER
'1
.
SINGLE PULSETRAIN SHOWN
'2.
.
PULSE READ TIME ATII

~ "'{l

-

.

I I II
0.05

TJ(pk} - TC'= P(pk} 8Je('}

l i l l l l l U l 1 1il lllilll 111
0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

'. TIME OR PULSE WIDTH (m.)

1-820

10

20

50

100

200

500

1000

®

MJE520
MOTOROI.A

III
3 AMPERE

PLASTIC MEDIUM-POWER NPN
SILICON TRANSISTOR

POWER TRANSISTOR
NPN SILICON
30 VOLTS

· .. designed for use in general'purpose amplifier and switching
circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
•

DC Current Gain - hFE = 25 IMin)

•

Complementary to PNP MJE370

@

25 WATTS

IC = 1.0 Adc

MAXIMUM RATINGS
Symbol

Value

Unit

VCEO

30

Vdc

Collector-Base Voltage

Vce

30

Vde

Emitter-Base Voltage

VEe

4.0

Vde

IC

3.0

Ade

Rating
Collector-Emitter Voltage

Collector Current - Continuous
- Peak

7.0

Base Current - Continuous

Ie

Total Power Dissipation @ T C = 2So C

Po
TJ, Tstg

Watts

25
0.2 1

Derate above 25°C
Operating and Storage Junction

Ade

2.0

WloC

-65 to +150

°c

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

STYLE 1
PIN 1. EMITTER
2. CO llECTO R
3. BASE

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS ITC" 25c C unless otherWIse noted)
Characteristic

Symbol

Min

Max

VCEO(susl

30

-

Vdc

IceD

-

100

~Adc

lEBO

-

100

~Adc

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

(lC

= 100 mAde,

Ie

= 0)

Collector-Base Cutoff Current

IVce "30 Vdc, fE

= 0)

Emitter-Base Cutoff Current

IVEB

= 4.0 Vdc,

IC

= 0)

ON CHARACTERISTICS
DC Current Gain (1)

(lC

= 1.0 Adc, VCE = 1.0 Vdc)

MilliMETERS
DIM MIN MAX
A 10.80 11.05
7.49
7.75
8
2.41
2.67
C
0.51
0.66
D
2.92
F
3.18
2.31
2.46
G
1.27
2.41
H
0.64
J
0.38
K 15.11 16.64
3'TYP
M
3.76
4.01
D
R
1.14
1.40
0.64
0.89
S
3.68
3.94
U
V
1.02

-

I

INCHES
MIN MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125
0.091 0.097
0.050 0.095
0.D15 0.025
0.595 0.655
3' TYP
0.148 0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040

CASE 77·04
TO· 126

(1) Pulse Test: Pulse Width S 3001"5, Duty Cycle S2.0%.

1-821

MJE520

FIGURE 1 ACTlVE·REGION SAFE OPERATING AREA

IIJ

10

-

0:: 5.0

t-

... - l- e-

1-

--

5 3.0
t-

~

2.0

'"0t-

1.0

::>
<.>

0.5

8

0.3

~

~

...

de

based on TJlpk)

=

150o e; Te i.

variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided (T Jpk) ~ 150°C. At
high case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate Ie . VeE limits of the transistor

....

....
TJ il5rC

;

The data of Figure 1

1.0ms-t5.0m;~·

:E

...........

SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
- - THERMALLY
LIMITED@TC= 25°C

that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves indicate.

0.2

I 1/ I

0.1
1.0

2.0

3.0

5.0

10

20

30

V·CE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURe 2 - DC CURRENT GAIN

1000
700
500

HtVeE

~ 300

15
!§
<.>

g

1

FIGURE 3 - "ON" VOLTAGE

1.5
1.2

1.0 V

~

200
100
70

~

r--.

TJ -150°C

TJ = 25°C

~
g 0.6

V,,@Ve ,

55°C

II
II

0.3

0
I0
2.0 3.0 5.0

10

2.0V

III
III II

V

VeEI ••• ,@lell.=IO

1/
20 30

>--:::

V"I ... ,@lell,=IO

0
0

A

0.9

~

25°C

/,

V

50

100

200 300 500

o

1000 2000

2.0 3.0 5.0

10

Ie. COLLECTOR CURRENT (mAl

20 30

50

100

200 300 500

1000 2000

Ie. COLLECTOR CURRENT ImA)

FIGURE 4 - THERMAL RESPONSE

ffi
N

::i

!o

1.0
0.7
5.0

~ 0.3

<.>

~

!ii
~

0.2

o. I

~ 0.07
~ 0.05

z
t-

0.03

ill!£ 0.02
z

D = 0.5

-

--

~

0.01

-

0.05
0.01

",.

.6JCltt- ,It) 6JC
6JC = 5.0 0 CNI Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpk) TC = PlpkJ 6JCIt)

....

YLJL
~It~
I,

SINGLE PULSE

DUTY CYCLE. D I,ll,

I I III

:i 0.0 I

-r

-....

0.1

0.2

0.02 0.03

0.05

0.1

I I 1111
0.2

0.3

0.5

1.0

2.0 3.0 5.0
I. TIME (m.1

1-822

10

20

30

50

100

200

300

500

1000

PNP

MJE700, T thru MJE703, T

®

MOTOROLA

NPN
Tth~MJE803,

MJESOO,

T

4.0 AMPERE

PLASTIC DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS

DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON

· .• designed for general·purpose amplifier and low·speed switching
applications.
•

High DC Current Gain hFE = 2000 (Tvp) @ IC = 2.0 Adc

•

Monolithic Construction with Built·in Base·Emitter
Resistors to Limit Leakage Muliplication

•

Choice of Packages T0126, MJE700 and MJEBOO series
T0220AB, MJE700T and MJEBOOT series

40 WATT - TO-l26
50 WATT - T0-220AB

!
A

M

K

MAXIMUM RATINGS

~D

S

G~

Symbol

MJE700,T
MJE701,T
MJEBOO,T
MJEB01,T

MJE702,T
MJE703,T
MJEB02,T
MJEB03,T

Unit

VCEO

60

80

Vdc

Collector-Base Voltage

VCS

60

80

Vdc

Emitter-Base Voltage

VES

5.0

Vdc

"00
7.49

IC

4.0

Adc

0"
2.92

IS

0.1

Adc

2.31

Rating
Collector-Emitter Voltage

Collector Current

Base Cu rrent

Po

Total Power Dissipation @ T C = 2SoC

Derate above 25°C
Operating and Storage Junction
Temperature Range

TO·126

TO·220

40
0.32

50
0.40

TJ. Tstg

r

tL.JLJ

~-t
DIM

STYLE 1
PIN' EMITTER
2. COLLECTOR
3 BASE

MILLIMETERS
MIN MAX
24'

NOTES
1. MT. MAIN TERMINAL
2. LEADS, TRUE POSITIONED
WITHIN 0.25 mm (0.010) OIA.
TO OIM. "A" & "8" AT
MAXIMUM MATERIAL
CONDITION.

1.27
0.38
15.111664
3 TYP

Watts
W/oC

-55to +150

°c

Max

Unit

MJE700-703
MJEBOO-B03

378
1.14
.64
3.68
1.0

4.01
1.40
0.9
3.
-

CASEn.Q4
0145
0,040

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
TO·126
TO·220

Symbol

C/W

R9JC
3.13
2.50

FIGURE 1 - POWER DERATING

O~
Of""...
0

"-

"-

.......... ~

~

TO·220AB

0

0

25

••
•,

..... ~ ~
TO-12B
~ -.........
........... -.........
.........

50

75

100

-703T
MJEBOOT-803T

01.

STYli'
PIN 1 BASE
2COLtECTOR

C

0-

••
•,
••
••
•

3

£MlTT~R

4 COlLECTOR_

J

~

125

1"'-

TC. CASE TEMPERATURE (001

1-823

150

Nfms

1 OIMENSIOM II APPliES TO ALL LEAOS 1
2 OIMINSlONLAPPUESTO LEADS 1
ANOa

T

CASE 221A-02

U

Z.O

-

O.

PNP MJE700,T thru MJE703,T
NPN MJESOO,Tthru MJES03,T

ELECTRICAL CHARACTERISTICS (TC = 25°C unl.s. otherwise noted)

I

Characteristic

Symbol

Collector-Emitter Breakdown Voltage (1)
(lC = 50 mAde, IB = 0)
MJE700,T, MJE701, T, MJESOO,T, MJESOI ,T

BVCEO

Min

Max

60
SO

-

-

100
100

-

100
500

Unit

OFF CHARACTERISTICS

IIIJ

MJE702,T, MJE703,T, MJES02,T, MJES03,T
Collector Cutoff Current
(VCE = 60 Vde, IB = 0)
(VCE = BO Vde, IB = 0)

Vdc

,.Ade

ICEO
MJE700,T, MJE701,T, MJESOO,T, MJES01,T
MJE702,T, MJE703,T, MJES02,T, MJES03,T

Collector Cutoff Current

jtAde

ICBO

(V CB = Rated BV CEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100°C)
Emitter Cutoff Current
(VBE = 5.0 Vde, IC e 0)

2.0

lEBO

mAde

ON CHARACTERISTICS
C~rr.nt Gain (1 )
(lC = 1.5 Ade, VCE
(lC = 2.0 Ade, VCE
(lC =4.0 Ade, VCE

OC

=3.0 Vde)
=3.0 Vde)
=3.0 Vde)

hFE
MJE700,T, MJE702,T, MJESOO,T, MJES02,T
MJE701 ,T, MJE703,T, MJEB01,T, MJES03,T

All devices

Collector-Emitter Saturation Voltage (1)
(lc = 1.5 Ade, IB = 30 mAde)
(lC = 2.0 Ade, IB = 40 mAde)
(lc = 4.0 Ade, IB = 40 mAde)

-

Vde

VCE(sat)

-

MJE700,T, MJE702,T, MJEBOO,T, MJES02,T
MJE701 ,T, MJE703,T, MJES01,T, MJEB03,T
All Device

-

2.5
2.S
3.0

-

2.5
2.5
3.0

-

Base-Emitter On Voltage (1)
(lC = 1.5 Ade, VCE = 3.0 Vde)
(lC = 2.0 Ade, VCE = 3.0 Vde)
(lc = 4.0 Ade, VCE = 3.0 Vde)

-

-

750
750
100

Vde

VBE(on)
MJE700,T, MJE702,T, MJESOO,T, MJES02,T
MJE701,T, MJE703,T, MJEB01,T, MJES03,T

All Devices

DYNAMIC CHARACTERISTICS

Small-5ignal Current Gain
(lC = 1.5 Ade, VCE = 3.0 Vdc, f = 1.0 MHz)
(1) Pulse Test: Puis. Width .. 300 jtS, DutY Cycle .. 2.0%.

FIGURE 3 - SWITCHING TIMES

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

4. 0 , .

Vee

VCC=30V
IC/IB = 250 IBI = IB2
TJ = 25 DC

1

·30V

RO & AC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01, MUST BE FAST RECOVERY TYPES, e.g.,

Re

MBD5300 USED ABOVE 18" 100 mA
MSD6100 USED BELOW 18" 100 rnA

SCOPE

~~:~-~-~~-_-~[1~

,. ",, __0-I

1251'S

-12V

tr,lf

I./' ~ t\. 1---1--"

.3

~ 1.0

--- -

>= 0.8

o. 6

r....

Fortdandtr,Ol"dlltonnKted
andV2=O,RBandRcarev&fi.d
to obtam dlllired test curr,nts

O.

f1IrNPN test CirCUit, reverstdlDdl,
polarlttlSlndmputpulsts.

O.2
0.114

---PNP
---NPN
0.06
0.1

...... E..; r-

t.::",

D-'f

r"

'"

f=

[""I"

I"'- l' ~~

0.2

.....

Ir

-.

-.......

41.:;:1--

r---

0.4

0.6

[~@4JII)=°rl
1.0

2.0

4.0

IC, COLLECTOR CURRENT (AMP)

~

FIGURE 4 - THERMAL RESPONSE (MJE700T, BOOT sarias)
1. 0

~
~

O.·7
0=0.5
O. 5

~

O. 3
O. 2

o
z

~
i:i0:

i

02

i"'":':

01

~

1

0.07 r - 0.05
ffi 0.05
0.01
:z:
.... 0.03

r-

-

~

~

="

Plpk)

tJUl
12~~

.........

E0.021--' fo.ot'::: I-"

i....
0:

0.0 1 .........
0.01

10-""
0.02

ZoJCIt) ~ rill ROJC
ROJC' 2.50DC/W Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT t)
TJlpk) - TC = P(pk) ZOJC(t)

OUTY CYCLE. 0 = 11112

SlrlJJJi
005

01

IIIII
02

05

10

20
t,

50
TIME (ms)

1-824

10

I I
20

J J IIIIII
50

100

11 111J...l..l
200

500

T.Ok

PNP MJE700,T thru MJE703,T
NPN MJE800,T thru MJE803,T

FIGURE 5 - THERMAL RESPONSE IMJE700, 800 •• ,ias)

III

1.0

~

D~05

0.1

~

5.0
02

~

0.3

;i~ 02

,.~

"'~

~:i

0-",

01

-

~gO.O 1~
~ 0.05

z

~

003

~

0.02

-

01
005

-

II JC := 3.12 oCIW Max

SINGLE PULSE

TJ(pkl

TC' P(pk) 0JC(I)

DUTY CYCLE. 0 -11/'2

II

111111

00 I
001

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II

NLrL
~:~~

"

0.01

f=

uJC(t) = rlt) tiJC

,::?

002 003

005

01

02

03

05

10

20

30

11111

I I

10

20

50

30

100

50

300

ZOO

500

1000

t, TIME (ms)

ACTlVE·REGION SAFE·OPERATING AREA
FIGURE 7 - MJE800so,ios

FIGURE 6 - MJE700 so'i..
0

0

7.0
~

~

-

....

... 3.0

ffi

'" 2.0

'"
i:l

de

...

....

...

....

~
_

..,o

E

I

O. I
5.0

II

..,=>

I.0
5. 0

100",-

....

....5.0~~ r-l.0ms

3.0

.... ...

d~""" ......

2.0

"

1.0

~ ~:
~~
r-' "-

10
50
20
30
VCE. CDLLECTDR·EMITIER VOLTAGE (VOLTS)

......
"-

TJ = 150°C
- - - BONOING WIRE lIMITEO
7 - - - THERMALLY LIMITED
IiPTc = 250C ISINGLE PULSE)
5
- - - SECOND BREAKDOWN LIMITED
~ D,3
MJES02.S00
O.2
MJESOO,BOI

a:.

o

\

L Ll

7.0

~

:'\.

"

1. 0

a:
~
...

r...

....

TJ = 150°C
- - - BONDING WIRE LIMITED
7
O. - - - THERMALLY LIMITED
O.5
@TC = 25°C (SINGLE PULSE)
- - SECOND BREAKDOWN LIMITED
O. 3
MJE702.703
O.2
MJE700.701

~

~

100,..

5.0 ni."., F";;:-1.0 m'....

5.0

1\

70

5.0

7.0

1\
"-

"-

\

O. I

100

"-

"-

10
20
30
50
VCE. CDLLECTOR·EMITTER VOLTAGE IVOL TS)

i\.

70

There are two limitations on the power handling ability of

The data of Figure, 6 and 7 a'e based on TJ(pk) = 150°C;

a transistor: average junction temperature and second break-

TC is variable depending on conditions. Second breakdown pulse

down. Safe operating area curves indicate Ie - VeE limits of the
transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.

limits are valid for duty cycles to 10% provided TJ(pk) < 150°C.
T J(pk) may be calculated from the data in Figure 4 or 5. At high
case temperatures. thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by
second breakdown.

FIGURE 8 - MJE700T so,i..

FIGURE 9 - MJEBOOT se'ies

0

£

0

~

5 2.0

'" 1.0

~

o. 5

100.,r:=t-.

100.'~

-.. ....

5.0

'"'"
i:l

.......

TJ-1500C
---BondingWire Limited
----Thermally Limited
liP 250 C ISingl. Pulse)
Second Breakdown Limited

....

~

'

~

O. 1

5.0

10

20

...

-

TJ= 1500 C
o~- - - Bonding Wire Limited

=---=
~ o. =_
8
1.

5

MJE700T,701T
7.0

2.0

i:l

:'\.5.0m.

'"

MJE702T,703T

o.2

....

5.0

5

'~:i-

...

,,-de

ii:'
2

8

~

100

30

--"l -'

-

"'\
50

~1.0m'

~

"~e~om'

@250C (Single Pulse)

Second Breakdown limited

'\

MJEB02T. SOOT

100

VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)

O. 1

5.0

MJEBOOT. BOlT

I
7.0

10

20

30

-

--"l ~

\

50

VCE, COLLECTDR·EMITIER VOLTAGE (VOLTS)

1-825

'\

Thermally limited

O. 2

l""
70

~

"\
70

100

PNP MJE700,T thru MJE703,T
NPN MJESOO,T thru MJES03,T

II]

PNP
MJE700,T ..ri..

NPN
MJE800,T sari..

I

FIGURE 10 - DC CURRENT GAIN

6.0 k

6.0k

3.0 k

z

V

;;:
~ 2.0 k

~

=>
~ to k
~ 800
~ 600

~

V

II

TJ = 125°C

VCP 3.0 V-

TJ -125°C

4.0k

150C

4.0 k

......'

[...-

r---.....

VI-'"

1'\

'\

/

3.0k

[\~

z

~

f\\

~

"\

i3
g

2.0 k

25°C . /

.Y1

1.0 k /
800

/

\

300

0.04

0.06

2.0

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

0.1

400
300
0.04 0.06

4.0

--.

""

~

r- i'. I~

~ 1\

/1'

-55°C

W
j- 600

400

VCE-3.0V

/

I
0.1

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

2.0

4.0

FIGURE 11 - COLLECTOR SATURATION REGION

S3.4

~ 3.4

II
II

o

~ 3.0
~

IC =
0.5A

~ 2.6

~

1.0 A

TJ = 25°C

II
II

2.0 A

o

~

w

'"~

4.0 A

1.0A

2. 6

2.0A

T/= ~5~t

4.0 A

~

~ 2. 2

ffi

2. 2

~

1.8

I:::

I-

..~

1.B

~

4

'"
~

1.

o
~1. 0

8

1. 0

~

m
m

II
.B

IC -

3.o 0.5 A

o
1.

I-

4

,.....

~

"

> O. 6
0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

> O. 6
0.1

100

0.2

0.5

1.0

lB. BASE CURRENT (mA)

2.0
5.0
10
lB. 8ASE CURRENT (mA)

50

20

100

FIGURE 12 - "ON" VOL TAGES

2.2

2.2

I I III

./
.....-V J...- i-"'"

TJ = 25°C

s
~

1.8

I II
V8E(sat)@ Iclla • 250

1.4

w

'"
~

~

I II

1.0

>"

f-

I

Jc~(~~) @IchB } 250

j.(

TJ = 25°C
1.8

11

".....

5~ 1.4 f- V8E I..:) ~IIC/IB = 250

VBE @VCE = 3.0 V

,/

V

'"~

.....- ...- """

c5 to

>
>-

11

I--V~E sa:) ~IIC/IB ~ 25J

j..,--'

VBE@ VCE • 3.0 V

w

O. 6
0.2
0.04 0.06

II

./

,,-

~

IL

0.6

0.1

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

2.0

4.0

1-826

0.2
0.04 0.06

0.1

0.2
0.4 0.6
1.0
IC. COLLECTOR CURRENT (AMP)

2.0

4.0

MJE1290 MJE 1291 PNP
MJE 1660 MJE 1661 NPN

@ MOTOROLA

15 AMPERE
COMPLEMENTARY SILICON

POWER TRANSISTORS
COMPLEMENTARY SILICON

MEDIUM-POWER TRANSISTORS

40-60 VOLTS
· .. designed for use in power amplifier and switching applications.
•

High Collector Current IC=15Adc

•

High DC Current Gain hFE = 10 (Min) @ IC = 15 Adc

90 WATTS

MAXIMUM RATINGS
MJE1291
MJE1661

VCEO

MJE1290
MJE1660
40

60

Vdc

Collector-Base Voltage

VCS

40

60

Vdc

Emitter-Base Voltage

Symbol

Rating

Collector-Emitter Voltage

Unit

VES

5.0

Vdc

Collector Current-Continuous

IC

15

Adc

Base Current

IS

5.0

Adc

PD

90
0.72

Watts
WloC

TJ, T stg

-65 to +150

°c

Total Power Dissipation
Derate above 25°C

@

T C = 25°C

Operating and Storage Junction
Temperature Range

Characteristics

S-

F

Max
1.39

V-Ul!v t

t --1l--J

H

:u

STYLE 2:

PIN 1. EMITTER
2. COLLECTOR
3. BASE

'T

A

0

"-

0

'"

o
"-

0
0

G
H

'"""-

K
M

'"
0

DIM

25

50

75

100

n

R

"
125

u

v

""

1

K

~::T C

80

~

A

---4G!:= R

FIGURE 1 - POWER TEMPERATURE DERATING CURVE

M

~-4
ff;--Ji --1 +[£It ..
'.,'
H

lJU-D

THERMAL CHARACTERISTICS
Thermal ResIstance, Junction to Case

_r-:-

-pr~

MILLIMETERS
MIN
MAX
16.13 16.38
12.57 12.83
3.1B 3.43
1.09 1.24
3.51 3.76
4.22 BSC
2.67 2.92
0.B13 O.B64
15.11 16.3B
9" TVP
4.70 4.95
1.91
2.16
6.22 6.48
2.03

INCHES
MIN MAX
0.635 0.645
0.495 0.505
0.125 0.135
0.043 0.049
0.138 0.148
0.166 BSe
0.105 0.115
0.032 0.034
0.595 0.645
90 TYP
0.185 0.195
0.075 0.085
0.245 0.255
0.080

CASE 90-05
TO-127
150

175

When mounting the device. torque not
to exceed 8.0 in.-Ib.

TC, CASE TEMPERATURE (DC)
If lead bending is required. use suitable
clamps or other supports between transistor case and point of bend.

1-827

MJE1290, MJE1291 PNP/MJE1660, MJE1661 NPN

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Max

40
60

-

-

1.0

-

0.7
0.7

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage III
(Ie

MJE 1290, MJE 1660
MJE1291, MJE1661

Collector Cutoff Current

IVCE

= 30 Vde,

'B

mAde

ICED

= 0)

Collector Cutoff Current
(VCE = 40 Vde, VBE = 0)
(VeE = 60 Vde, VBE = 0)

mAde

Ices
MJE 1290, MJE 1660
MJE1291, MJE1661

Collector Cutoff Current
(VCB = 40 Vde, 'E = 0)
(VCB = 60 Vde, 'E = 0)
Emitter Cutoff Current
(VBE = 5.0 Vde, Ie =

Vde

VCEO(sus)

= 200 mAde, IB = 0)

-

mAde

ICBO

-

MJE 1290, MJE 1660
MJE1291, MJE 1661

-

0.7
0.7

-

1.0

20
10

100

-

1.8

-

2.5

3.0

-

25

-

mAde

'EBO

PI

ON CHARACTERISTICS
DC Current Gain 11)
(lc = 5.0 Ade, VCE = 4.0 Vde)
(IC = 15 Ade, VeE = 4.0 Vde)
Collector-Emitter Saturation Voltage (1)
(lC = 15 Ade, 'B = 1.5 Ade)

veE (sat)

Base-Emitter on Voltage

VBE(on)

(Ie

= 15 Ade,

Vee

-

hFE

(1)

= 4.0 Vde)

Vde
Vde

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(Ie = 1.0 Ade, VCE = 10 Vde, I

= 1.0 MHz)

Small-Signal Current Gain
(lC = 1.0 Ade, VeE = 10 Vde, I

= 1.0 kHz)

MHz

IT

-

hie

(11 Pulse Test: Pulse Width'S. 300 IJ,S. Duty Cycle'S 2.0%.

FIGURE 2 - DC SAFE OPERATING AREA

\

100
0:

50 -1J 1500 C

~ 20

~

10

...~

5.0

---

'" 2.0
~

= 1.0

8

~

-- r-

- - - - Secondary'Breakdown Limited
- - - - - Therm~ly Limited, TC=25 0 C
--- Bonding Wire Limited

-MJE1291

~ r--MJE1661

The Safe Operating Area Curves Indicate Ie-VeE limits below
which the device will not enter secondary breakdown. Collector
load lines for specific circuits must fall wlthm the applicable Safe
Area to avoid causing a catastrophic failure. To' insure operation
below the maximum T J. power-temperature derating must be observed for both steady state and.pulse power conditions.

\ \

0.5
MJE 1290, MJE 1660

O. 2
O. 1
1.0

2.0

3.0

1111
5.0 7.0 10

20

30

50

70 100

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-828

®

MJE2360T
MJE2361T

MOTOROLA

l1li
NPN SILICON HIGH-VOLTAGE TRANSISTOR

0_5 AMPERE
POWER TRANSISTORS
NPN SILICON

· .. useful for general-purpose, high voltage applications requiring
high fT.

350 VOLTS
30 WATTS

• Collector-Emitter Sustaining Voltage vCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAde
•

DC Current Gain hFE = 40 (Min) @ IC

= 100 mAde -

MJE2361T

• Current-Gain-Bandwidth Product fT = 10 MHz (Typ) @ IC =50 mAde

MAXIMUM RATINGS
Symbol

Value

Unit

VCEO

350

Vdc

Collector-Base Voltage

VCB

375

Vdc

Emitter-Base Voltage

VEB

6.0

Vdc

Collector Current - Continuous

IC

0.5

Adc

Sase Current

IB

0.25

Adc

Po

30
0.24

Watts

W/oC

T J.Tstg

-65 to +150

DC

Rating
Collector-Emitter Voltage

Total Power DISSipation @ TC
Derate above 2SoC

= 25°C

Operating and Storage Junction

~~[B
l

r

Temperature Range

A

I

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

Symbol

Max

Unit

8JC

4.167

°C/W

LlI
K

PIN 1 BASE

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE

2 COlUCTOR
3 EMITTER
4COtlECTOR

40

~
....

35

'"

30

0

25

~
z

;:
~

iii

20

'"~

15

i5

~

~

"'" "'"

1213

j~N'~~
j L
NOTES
1 DIMENSION H APPLIES TO AtL LEADS
2 DIMENSION l APPL1ES TO lEADS 1
AND 3

"""t-" .........,

10

" I'.... .........,

5.0

o
o

-.

D

;O-r:
,H""

1t~
STYLE I

F

u

i"-.
20

40

60

80

100

120

140

160
CASE 221A-G2
(TO·220 AB)

TC. CASE TEMPERATURE 1°C)

1-829

MJE2360T , MJE2361T
,

OJ

~

ELECTRICAL CHARACTERISTICS (TC

25 0 C unless otherwise noted)

Characteristic

Max

Svmbol

Min

Typ

VCEO(sus)

350

-

-

Vde

ICEO

-

-

0.2~

mAde

ICEX

-

--

0.5

mAde

ICBO

-

--

0.1

mAde

lEBO

-

-

0.1

mAde

-

200
250

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)

(lC" 2.5 mAde, IB" 0)
Collector Cutoff Current

(VCE" 250 Vde, IB" 0)
Collector Cutoff Current

(VCE' 375 Vde, VEB(off) " 1.5 Vde)
Collector Cutoff Current

(VCB" 375 Vde, IE" 0)
Emitter Cutoff Current

(VBE " 5.0 Vde, IC " 0)
ON CHARACTERISTICS (1)
DC Current Gain

-

hFE

(lC" 50 mAde, VCE " 10 Vde)
(lC" 100 mAde, VCE' 10 Vde)

MJE2360T
MJE2361T

25
50

MJE2360T

15
40

MJE2361T
Collector-Emitter Saturation Voltage

-

-

VCE(s.,)

1.5

Vde

1.0

Vde

(lC" 100 mAde, IB" 10 mAde)
Base-Emitter On Voltage

VBE(on)

(lC" 100 mAde, VCE " 10 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain -Bandwidth Product

10

IT

MHz

(lc " 50 mAde, VCE " 10 Vde, I" 1 0 MHz)

Output Capacitance
(VCB" 100 Vde, IE " 0, I" 100 kHz)
(1)Pulse Test

Cob

_.

20

-

pF

Pulse Width $ 300 I-lS, Duty Cycle '5: 2.0%

FIGURE 2 - OC SAFE OPERATING AREA
1.0

ii:

~

0.5

0.3

I-

~ 0.2

B

- - - Secondary Breakdown Limited
_ .. B~nding Wire Limited

O. 1

'"

1\

The Safe Operating Area Curves indicate IC~VCE limits below
which the device will not enter secondary breakdown. Collector
load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J, power-temperature derating must be observed for both steady state and pulse power conditions.

o

t;

~ 0.0 5

S 0.03~Tl~lJQ~

\\

~O.O 2

0,0 1
1.0

II
2.0

5.0

10

20

50

100

200

500 1000

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-830

NPN

MJE2801, MJE2801T

®

PNP

MOTOROLA

MJE2901,MJE2901T
10 AMPERE

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. for use as an output device in complementary audio amplifiers
up to 35,Watts music power per channel.

60 VOLTS
75,90WATTS

•
•

I

High DC Current Gain - h F E = 25·100 @ IC = 3.0 A
Choice of Packages - MJE2801, 2901 - TO·225A8 (TO·127)
MJE280lT, 290lT - TO·220AB

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

VCEO

60

Vde
Vde

Collector-Emitter Voltage

STnE 2
PIN I EMITTER
2 COLLECTOR
3 BASE

Coliector·Base Voltage

VCB

60

Emitter-Base Voltage

VEB

4.0

Vde

IC

10

Adc

". .'N

IB

5.0

Adc

,•
C

Watts

F
G

Collector Current

Base Current
Total Power Dissipation
MJE2B01,2901
MJE2BOIT, 290IT
Derate above 2SoC
MJE2B01, 2901
MJE2BOIT,290IT

@

Pot

T C = 2SoC

MllllMET£RS

A

MAX

1613
1251
JI

109
351

.

J

1511

M

W/oC

U
V

-55 to +150

TJ, T stg

'24

'"'92

MJE2801
MJE2901

°c

1638

DTYP

Q

Operating and Storage Junction
Temperature Range

343

4228SC

• '"" "64
'91
'91 ,,.
• 41'

90
75

H

0.72
0.6

163B
1283

, 2
203

.

,

INCHES
Mlr.

MAX

OaJS 064S
0495 0505
0125 013S
.043 "49
0138 0148
DIBBaSC
"00 o liS
0032 0034
0595 0645
goTYP
0185 "91
0075
0245 0255

'DB'

L9J!!1LL

CASE 90·05
TO·225AB
(TO·127)

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, Junction to C.e

OJC

Ma.
1.39
1.61

tSafe Area Curves are mdicated by Figure 1

Both limits are applicable and must be observed.

ELECTRICAL CHARACTERISTICS (Tc

I

Characteristic

Unit

°C/W

MJE2B01,2901
MJE280IT.2901T

I

=

25°C unless otherw". notedl

Symbol

I

Min

I Max I

60

-

-

0.1

-

1.0

25

100

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)

Collector-Cutoff Cl.!.rrent

mAde

ICBO

(Vce = 60 Vde, IE = 01
(VCB.= 60 Vde, IE = 0, TC = 1500CI

Emitter Cutoff Current

Vde

BVCEO

IIc = 200 mAde, Ie = 0)

2.0

mAde

lEBO

(VBE = 4.0 Vde, IC = 01

Base·Emltter Voltage

Vde

VSE

IIc = 3.0 Ade, VCE = 2.0 Vdc)

-

1.4

2 COLLECTOR
3 EMITTER
4 COLLECTOR

F
G
H

NOTES
1 IlIMfNSION II APPlIfS TO ALL LfAOS
2 DIMENSION LAPPLIES TO L{AOS1
AN03
30lMENSIONlOfflNESAlONEWHfRE
All BODVANOLEAoIRRfGULARITIES
ARE ALLOWED
4 DIMENSIONING AND TOL£RANClHG PER

J

-

hFE

IIc = 3.0 Ade. VCE = 2.0 Vdc)

••
,c
•,

ON CHARACTERISTICS
DC Current Gam

STYlfl
PIN 1 BASE

DIM

••
••
•

ANSIY14~M.1982

T
U

5 CONTROLLING DIMENSION INCH

Z

CASE 221A·02
TO·220AB

(1) Pulle Test: Pulse Width ~300 J'S, Duty Cvele E;;2.0%.

1-831

....

MJE2801/MJE2801T NPN, MJE2901/MJE2901T PNP

FIGURE 1 - ACTIVE REGION
SAFE OPERATING AREA

I

10
1.0
5.0

....

3.0

~ Z.O

""B
"

0 .. MJE2801
,.JE2901

I

=--

~MJE2801T~
MJE2901T

,\.

There are two limitations on the power handling ability of a
tranSistor: average junction temperature and second breakdown
Safe operatmg area curves Indicate Ie VeE 'Imlts of the tranSistor
that must be observed for reliable operation; I.e., the transistor must

...~

#

V,\

~IR~ ~IM\TIE~

C>

~

1.0
aONDING
0.1 =-----THERMALLy lIMIT@TC=25"
SECONDARY aREAKDOWN L'II ITED
0.5

B

0.3

!:!

O. 2

not be subjected to greater diSSipation than the curves indicate,
The data of Figure 1 IS based on T Jlpk) = 150°C; T C IS vanable
depending on conditions. Second breakdown puise limits are valid
for duty cycles to 10% provided T Jlpk) ~ 150°C. At high case
temperatures, thermal limitations Will reduce the power that can be
handled to values less than the limitations Imposed bV second
breakdown.

1\

O. I
1.0

2.0

3.0

5.0

1.0

10

20

30

50 60

VCE. COllECTOR-EMITTER VOLTAGE IVOLJS)

FIGURE 2 - OC CURRENT GAIN

fiGURE 3 - POWER DERATING
90

500

200

z

~

100

.a

~o

~

III

300

VCE = 2 0 V

Tp 150°C

...-

I-""

;;:
Bi

0

~

0

~O

'"~

......

~

J?

........... MJE2BOI
MJE2901

"'-

MJE2801T......
MJE290lT

Ci 40

-55°C

<->

c

"'-"

~

i5
;:: 60

2~Oc

>-

~

~

80

'"

~ 10

,

30
10
10

0

o

50
0.01

0.02

0.05

0.1

0.2

05

1.0

2.0

5.0

o

...........

"

"-

l~

~

"

50
15
100
11~
TC. CASE TEMPERATURE lOCI

1~

10

150

m

IC. COLLECTOR CURRENT IAMPSI

FIGURE 4 - "ON" VOLTAGES
MJE29011MJE2901T

MJE2801/MJE2801 T
10

1.4
1.2

Tp 250C

1/

TJ

~

15°C

16

.1
..l

_ 1.0

~

I--- ::.---

VaEI .. ,) II> Iclla = 10

~ 0.8

....:

1

~

:l
!:;

0.6

Va Elsa') @ IC 'Ia = 1% ;::::::;::;-

VaE II>VCE • 2.0 V

C>

a

>

"> 0.4

VaE@VCE"

0.2

-

VCEISI,)@IC/1a=10
0.1

0.2

0.3

0.5

1.0

2.0

~

30~

5.0

10

IC. COLLECTOR CURRENT lAMP)

!

10

o
01

~

..l -Iii 111

4

lCE)",,1 I" Ilcll!
30

01

03

05

10

.10

IC. COLLECTQR CURRENT IAMPI

1-832

~

;..'

V
30

50

10

®

MJE2955, MJE2955T
MJE3055, MJE3055T

MOTOROLA

PNP
NPN

10 AMPERE

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
designed for use in general·purpose amplifier and switching
applications.

COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS

't

75,90WATTS

•

DC Current Gain Specified to 10 Amperes

•

High Current Gain - Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc

•

Choice of Packages - MJE3055, MJE2955 - TO·225AB (TO·127)
MJE3055T, MJE2955T - TO·220AB

JE2955

B

' - MJE3055

f~
,- -3

i-rf'+- i

Symbol

Value

Unit

VCEO

60

Vdc

Collector-Base Voltage

VCS

70

Vdc

Emltter·Base Voltage

VES

5.0

Vdc

IC

10

Adc

6.0

Adc

Rating

STYLE 2

PIN I EMITTER

Collector-Emitter Voltage

Collector Current
Base Current

90
75

W/oC

0.72
0.6

w/oe

-55 to +150

°c

MJE3055, MJE2955
MJE3055T,MJE2955T

HL

--I-~I-- D

GI-- ~

--JI--J

~'l'f

A

•

•
f
G

H
J
K
M

•

Derate above 2SoC
MJE3055, MJE2955
MJE3055T,MJE2955T

Operating and Storage Junction
Temperature Range

•

.,M

Watts

PDt

= 2SoC

I

t

t

IS

Total Power DISSipation @ T C

2 COLLECTOR
3 BASE

j

V

MAXIMUM RATINGS

T J, T stg

R

U
V

CASE 90·05
TO·225AB
ITO·127l

THERMAL CHARACTERISTICS
Max

Symbol

Characteristic

Thermal Resistance, Junction to Case

Unit

°CIW

°JC
1.39
1.67

MJE3055, MJE2955
MJE3055T,MJE2955T
tSafe Area Curves are Indicated bV Figure 1

Both limits are applIcable and must be observed

FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA
0

10m~100",S

0

5 Oms ~/--

0

MJE3055T
MJE2955T

0

V

t-:::::
[7

0

MJEi055, MJE2955/

d,

'" r::::-\''\

0
)

,
"
[\

\'

~

5

2

TJ • 150'C
- - - SECOND BREAKDOWN LIMITED

1-[-

2COllfCTOA
3 EMITTER
4COll!:CTOR

A

8

t

•
•

/'jons

f

I--t-lJ

STYLE 1
PINI8ASl'

DIM

- ' - - - BONDING WIRE LIMITED

--.;;

THERMALLY LIMITED

1 DIMENSION H APPlIES TO t.Ll LEADS
2 OIMtNSIONlAPPLlI'ST(}lEADS I
AN03
3 DlMENSIONZOEFINESAZONEWliEAE
ALL BOOY AND lEAO IRAEGULARITIES
ARE ALLOWED

H

J

•
l

•

TC" 2S DC (0 "0 111

4 DIMfNSIOI'IING AND TDLERANCING PER

ANSIV\4St.1 1982
5 CONTROlliNG DIMENSION INCH

Q

O. I

5.0

10

HI
20
JD
VeE. COLLECTOR EMITTER VOLTAGE (VOLTSI

5060

R
S

MJE2955T

T

MJE3055T

U
There lire two l'm'lalloni On the powe, handling 3blhCV of II l.anSlupr ave.age )und.on
lempe.at" •• and Mcond brea~down Sate ope.alln; area cu'v"s IndICate Ie VeE t'm.1S of
Ihe tran$lstor lh.r mull be observed tor reliable operatIon, e Ihe trlln .. uo. muSI not be
subjected to g,eat.r dOSSlp.llon than Ihe cu'veS,"d,c.,,!"
Tha data of FIgure 1 IS based on TJ,pkl . 150°C TC IS "."abledapendmlloncond,
I'D'" o&econd b •• aledo ..... " pulse 1'''''1$ are " .. loa fa. dUlY cyde, 10 10% p.ov,ded T J(pk I
.5 150 C At h'lIh cas" temperatures, the. mal I,mltat,on ...... 11 reduce Ihe QD""e. Ihat can be
handled 10 v .. lu•• less than the l,m.lallOn. ,mposed by U'cond l:I'eakdown (s. . AN 415A)

1-833

V

Z
CASE 221A·02
TO 220AB

MJE2955,MJE2955T,PNP,MJE3055,MJE3055T,NPN

OJ

ELECTRICAL CHARACTERISTICS

L

(TC" 25°C unless otherwIse noted I

I

Min

Ma.

60

-

-

700

-

1.0

-

5.0

-

1.0

-

10

-

5.0

VCE = 4.0 Vdcl

20

100

(lc = 10Ade, VCE = 4.0 Vdel

5.0

-

-

II

Ch.r.cteristic

Svmbol

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (11
(lC

Vde

VCeO(,u,1

=200 mAde, IS = 01

Collector Cutoff Current
(VCE

/lAde

ICEO

=30 Vde, IS =01

Collector Cutoff Current

mAde

ICEX

=70 Vde, VES(olf} = 1.5 Vdel
(VCE = 70 Vdc, VES(offl = 1.5 Vdc, TC = lSOoCI
(VCE

Collector Cutoff Current

mAde

ICSO

(VCS = 70 Vde,IE = 01
(VCB = 70 Vde, IE = 0, TC = 150CCI

Emitter Cutoff Current

mAde

IESO

(VSE'" 5.0 Vde, I C = 01

ON CHARACTERISTICS
DC Current Gam (1)
(lC

=4.0 Ade,

hFE

Collector-Emitter Saturation Voltage (11

Vde

VCE(,.tl

(lC = 4.0 Ade, IS = 0.4 Adcl
(lC

= 10 Adc, IS = 3.3 Adel

8ase·Emltter On Voltage (1)

80
Vde

VSE(onl

-

(lC = 4.0 Ade, VCE = 4.0 Vdel

18

DYNAMIC CHARACTERISTICS
Current-Gatn-Bandwldth Product
(lC = 500 mAde, VCE = 10 Vdc, f =500 kHzl
(1)Pul .. T.st. Pulse Width ~300 ,",S, Duty Cycle ~2.0%.

FIGURE 3 - POWER DERATING

FIGURE 2 - DC CURRENT GAIN
90
80

«

~

/0

r--

I"

0
;:: 60

:i:

Bi

"'

M\E30"

..........

z

"

MJE1966

..........

'0

MJE3055T

<5 40

JE29!1!iT

~

~
.f!

1'-.." I'-..

""" I~

30
'0
10

o
oo~

01

02

Of!

10

20

50

o

,
..........
"0

100

10

Te CASE TEMPERATURE (oCI

Ie. COLLECTOR CURRENT lAMP)

FIGURE 4 - "ON" VOLTAGES

MJE2955, 2955T
20

r-= VBE. VfE ?O,V

r-- VJE,L) ~ IC!IB ~ 10
02

0.3

D.'

1.0

-

20

./
30

'"
~

0

->

O.

•
•

VeEIsI".lc/1e = 10

0

10

0.1

Ie. COLLECTOR CURRENT (AMP)

,...

0.2

03

O.S

1.0

-

2.0

Ie, COLLECTOR CURRENT lAMP)

1-834

-

I

VBEflVce"20V

O. 2
5.0

..,..

VBElsall@llc/I B=10

~08

....,:::::

VBElllt)ltIC/I,B '" 10

0.1

---

~ 10

~

o

MJE3055 3055T

TJ = 2SoC

1•2

•

0.'

-

"

TJ' 2SoC

.".30

10

®

MJE3300MJE3301 MJE3302
MJE3310 MJE3311 MJE3312

MOTOROLA

PLASTIC DARLINGTON COMPLEMENTARY
SILICON ANNULAR POWER TRANSISTORS
· .. designed for general-purpose amplifier and high-speed switching
appl ications.
•

High DC Current Gain hFE = 2000 (Typl @ IC

•

Collector-Emitter Sustaining Voltage - @ 10 mAdc
VCEO(susl = 40 Vdc (Mini - MJE3310/MJE3300
= 60 Vdc (Mini - MJE3311/MJE3301
= 80 Vdc (Mini - MJE3312/MJE3302

•
•
•

Reverse Voltage Protection Diode
Pinout Compatible with TO-220 Package
Monolithic Construction with Built-In Base-Emitter Output
Resistor

•

Thermopad"
Reliability

COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOL TS
15 WATTS

Construction With Hard Solder for High

MAXIMUM RATINGS
Symbol

MJE3310 MJE3311 MJE3312
MJE3300 MJE3301 MJE3302 Unit
40

60

VCB

40

Vdc

Emitter-Base Voltage

VEB
IC

80
60
5.0_

4.06.010015-0.121.5-0.012-..(l5to+150-

Adc

Collector-Emitter Voltage

Collector Current

Continuous
Peak

Base Current

18

Total Power Dissipation@TC = 2SoC
Derate above 26°C
Total Power Dissipation @ TA 2SoC
Derate above 2SoC

PD
PD

Operating and Storage Junction
Temperature Range

TJ.Tstg

80

Vdc

VCEO

Collector-Sase Voltage

.

Vdc

mAde
Watts

wf'c
Watts

wfDc
°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
STYLE 3:
PIN 1. BASE
2. CO LLECTO R
3. EMITTER

FIGURE 1 - POWER DERATING
6

1

I..... i'...
2

1

:-.......

"'-

0

I

"" i'-.. i'..

0

"'o
20

40

60

80
100
120
T. TEMPERATURE 1°C)

..... 1'-..,
140

0
160

MILLIMETERS
MIN
MAX
10.80 11.05
7.49
7.75
2.41
2.67
0.66
0.51
2.92
3.18
2.31
2.46
1.27
2.41
J
0.38
0.64
K 15.11 16.64
30 TYP
M
Q
3.76
4.01
R
1.14
1.40
S
0.64
0.89
U
3.68
3.94
V
1.02

DIM
A
B
C
0
F
G
H

INCHES
MIN
MAX
0.425 0.435
0.295 0.305
0.095 0.105
0.020 0.026
0.115 0.125

I

0.025
0.145
0.040

CASE 77-04
TO-126

1-835

PNP

DARLINGTON
4-AMPERE

= 1.0 Adc

Rating

NPN

~
~
~
~

'-b--

~
0.055
0.035
0.155

-

MJE3300, MJE3301 ~ IVIJE3302 NPN
MJE3310,.MJE3311, MJE3312 PNP
ELECTRICAL CHARACTERISTICS (TC

I

= 25°C unless otherwise noted.)

I

Characteristic

Min

Symbol

Max

Unit

OFF CHARACTERISTICS

OJ

Coliector·Emitter Sustaining Voltage (1)

= 10 mAde,

= 0)

Vde

VCEO(sus)
MJE3310,MJE3300
MJE3311,MJE3301
MJE3312,MJE3302

-

40
60
80

-

-

100
100
100

-

-

1,0
100

-

1.0

1000
750

-

VCE(sat)

-

1.5

Vde

Base-Emitter Saturation Voltage
(lC = 1.5 Ade, IB = 6.0 mAde)

VBE(sat)

-

2.5

Vde

Base-Emitter On Voltage

VBE(on)

-

2.5

Vde

VEC

-

(lC

IB

Collector-Cutoff Current

(VCE
(VCE
(VCE

= 20 Vde, IB = 0)
= 30 Vde, IB = 0)
= 40 Vde, IB = 0)
= Rated
= Rated

MJE3310,MJE3300
MJE3311,MJE3301
MJE3312,MJE3302

= 5.0 Vde,

IC

I'Ade

ICBO

VCEO(sus), IE
VCEO(sus),IE

= 0)
= 0, TC = lOOoC)

Emitter Cutoff Current

(V BE

I'Ade

ICEO

Collector Cutoff Current

(VCB
(VeB

-

lEBO

I'Ade

= 0)

ON CHARACTERISTICS
DC Current Gain

(lC
(lC

VCE
VCE

= 2.0 Vde)
= 2.0 Vde)

Collector-Emitter Saturation Voltage

(lC

(lC

-

hFE

= 1.0 Ade,
= 1.5 Ade,
= 1,5 Adc,

= 1.5 Ade,

IB

= 6,0 mAde)

VCE = 2,0 Vde)

Output Diode Voltage Drop
(I EC = 2,0 Ade)

2,0

Vdc

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

(lC= 1,0 Ade, VCE = 2,0 Vde)
(1) Pulse Test: Pulse Width <; 300'l's, Duty Cycle <; 2,0%,
FIGURE 2 - ACTlVE·REGION SAFE OPERATING AREA
0

FIGURE 3 - TYPICAL DC CURRENT GAIN
300 0

lOOps
500/..ls

5,0
0

1.Oms

of..

I

5.0 ;{;'

TJ

5
-

-

-

."

....

r-. ..........

.150'~f

200 0

:,....- ~

'"'"

... 1000

ffi

~ !-"

-

5

~ 700

BONDING WIRE LIMITED
THERMALLY LIMITED @TC=25'C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

~ 500
~ 400
~ 300

~!'\'

I I I I I =~~~m:=~~~~~~
2,0

3.0

5.0 7.0

10

20

Tr 251'C

1\

VCE-2,OV

\\

200

MJE331D,MJE3300
0,02

" r\.

~JE~0.3312

=>

1

0,0 1
1.0

MJE33do.330~

:!!: 1500

<'.,:\

I==dC

-

30

50

70 100

100

\'
0,2

0,5

0.3

VCE, COLLECTDR·EMITIER VOLTAGE (VOLTS)

OJ

1.0

2,0

IC, COLLECTOR CURRENT (AMP)

FIGURE 4 - DARLINGTON CIRCUIT SCHEMATIC
Collector

PNP
MJE3310

Collector

---,

thru

r----

MJE3312

1

1

I

I
I
I
I
I

Base

I
I
I
IL

____

NPN
MJE3300
thru
MJE3302

Ba ..

__ J

Emitter

r----

---,

I
I

I
I
I
IL

I
I
I
I
I
I
____

__ J

Emitter

1-836

3,0

~

4,0 5,0

®

MJE3439
MJE3440

MOTOROLA

0_3 AMPERE
NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS
... designed for use in line-operated equipment requiring high

fro

POWER TRANSISTORS
NPN SILICON
250-350 VOLTS
15 WATTS

•

High DC Current Gain hFE = 40-160@ IC = 20 mAde

• Current·Gain-Bandwidth Product fT = 15 MHz (Min) @ IC = 10 mAde
•

Low Output Capacitance Cob = 10 pF (Max) @ f = 1.0 MHz

MAXIMUM RATINGS
Rating

Svmbol

MJE3439

MJE3440

Unit

VCEO

350

250

Vdc

Collector-Base Voltage

VC8

450

350

Vdc

Emitter-Base Voltage

VE8

Collector-Emitter Voltage

Collector Current

Continuous

IC

IBase Current

-

PD

Derate above 25°C
luperating and Storage Junction

0.3

--

Vdc
Adc

_150_

18

Total Power Dissipation @TC - 2SoC

--

5.0

15
0.12

---

-65'0+150-

TJ.Ts'g

mAde
Watts
W/oC

uc

~H

K

Temperature Range

THERMAL CHARACTERISTICS
Characteristic
hermal Resistance, Junction to Case

STYLE 1
PIN 1. EMITTER
2. COLLECTOR
3. BASE

FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
16

....

'"

14

~
z

12

....
«

r-- r-...

b,.

"-

0

r=
ill

8.0

"

6.0

~

4.0

:t
0

~

10

"

~

~

2.0

o

o

20

40

60

80

100

~
120

.....

r--..

140

160

MILLIMETERS
OIM MIN MAX
A 10.80 11.05
7.49
7.75
8
C
2.41
2.67
0.51
0.66
0
F
2.92
3.18
2.46
G
2.31
1.27
2.41
H
0.64
J
0.38
K 15.11 16.64
30 TYP
M
Q
4.01
3.76
R
1.14
1.40
S
0.64
0.89
U
3.68
3.94
V
1.02

INCHES
MIN MAX
0.425 0.435
0.295
0.095
0.020
0.115
0.091
0.050
0.015
0.595
30 T
0.148 .0.158
0.045 0.055
0.025 0.035
0.145 0.155
0.040

CASE 77-04
T()'I26

TC. CASE TEMPERATURE 1°C)

1-837

[[OC

MJE3439, MJE3440

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Max

350

-

250

-

-

20
50

MJE3439

-

500

MJE3440

-

500

MJE3439

-

20

MJE3440

-

20

-

20

30

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC = 5.0 mAde, IB = 0)
(lC

= 50 mAde, 18 = 0)

MJE3440

Collector Cutoff Current
(VCE = 300 Vde, IB = 0)

MJE3439

= 200 Vde,

MJE3440

(VCE

IB

(VCE

= 300 Vde, VEB(off)

= 35,0 Vde,
(VCB = 250 Vde,

jtAde

ICEX

= 1.5 Vde)
= 1.5 Vde)

Collector Cutoff Current

(VCB

jtAde

ICEO

= 0)

Collector Cutoff Current
(VCE = 450 Vde, VEB(off)

Vde

VCEO(sus)
MJE3439

jtAde

ICBO

= 0)
IE = 0)
IE

Emitter Cutoff Current
(VBE = 5.0 Vde, IC = Ol

lEBO

jtAde

ON CHARACTERISTICS

DC Current Gain
IIC = 2.0 mAde, VCE

= 20 mAde, VCE

-

hFE

= 10 Vde)
= 10 Vde)

50

200

Collector-Emitter Saturation Voltage
(I C = 50 mAde, I B = 4.0 mAde)

VCE(satl

-

0.5

Vde

Base-Emitter Saturation Voltage

VBE(sat)

-

1.3

Vde

VBE(on)

-

0.8

Vde

fT

15

-

MHz

Cob

-

10

pF

hfe

25

-

-

IIC

(I C

= 50 mAde, I B = 4.0 mAde)

Base-Emitter On Voltage
IIC= 50 mAde, VCE = 10 Vde)
DYI\IAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f

= 5.0 MHz)

Output Capacitance
(VCB

= 10 Vde,

IE

= 0, f = 1.0 MHz)

Small-Signal Current Gain
(lC = 5.0 mAde, VCE = 10 Vde, f

= 1.0 kHz)
FIGURE 2 - ACTIVE-REGION SAFE OPERATING AREA

1.0
0.7
0.5
~

0,3

:!

0.2

'"
=>
'-'
'"
o
~

0.07
0.05

>~

0,1

The Safe Operating Area Curves indicate Ie-VeE limits below
which the device will not enter secondary breakdown. Collector

0.03

001
8-<.3 0,007
0.005
-

load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must be observed for both steady state and pulse power conditions.

"-

0,02

MJE3440

0.003
0.002

MJE3439 ........

0.00 1
1.0

2.0 3.0 5.07.0 10

20 30

50 70 100

200 300500

1000

VCE, COLLECTOR·EMITIER VOLTAGE (VOLTSI

1-838

®

PNP
MJE4350
MJE4351
MJE4352
MJE4353

NPN
MJE4340
MJE4341
MJE4342
MJE4343

MOTOROLA

l1li
HIGH-VOLTAGE - HIGH POWER TRANSISTORS

16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON

. designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc
= 120 Vdc
= 140 Vdc
= 160 Vdc

-

NPN
MJE4340
MJE4341
MJE4342
MJE4343

100-160 VOLTS

PNP
MJE4350
MJE4351
MJE4352
MJE4353

,

• High DC Current Gain - @ IC = 8.0 Adc
hFE = 35 (Typ)
• Low Collector-Emitter Saturation Voltage VCE(sat) 2.0 Vdc (Max) @ IC 8.0 Adc

=

=

MAXIMUM RATINGS
Rating

Symbol

MJE4340 MJE4341 MJE4342 MJE4343
MJE4350 MJE4351 MJE4352 MJE4353

VCEO

100

Collector-Base Voltage

VCB

100

Emitter-Base Voltage

VEB

Collector-Emitter Voltage

Collector Current

Continuous

'C

Peak (11
Base Current

Contlnous

'B

Po

Total Device DISSipation

@TC=25°C
Operating and Storage Junction
Temperature Range

...

Unit

120

140

160

Vde

120

140

160

..•

Vde

70

.
.
..

16
20

•

.

50

.

125
-65 to +150

TJ.Tstg

Vde

Ade
Ade
Watts

°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

(1) Pulse Test Pulse Width ~ 5 0 IJS. Duty Cycle ~10%
STYLE 1
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

FIGURE 1 - POWER DERATING
REFERENCE: AMBIENT TEMPERATURE

5

a

MIlL1METERS
INCHES
DIM MIN MAX
MIN MAX
A 20.32 21.08 0.800 0.830

~
r'-..

5

a
5

~

05

"-

B
C

0

""- ~

E
G

H
J

K

"-

L

N

~
25

50

n

75
100
125
150
TA. AMBIENT TEMPERATURE (OCI

15.49
4.19
1.02
1.35
5.21
2.41
0.38
12.70
15.88
12.19
4.04

15.90
5.08
1.65
1.65
5.72
3.20
0.64

15.49
16.51
12.70
4.22

0.610
0.165
0.040
0.053
0.205
0.095
0.015
0.500
0.625
0.480
0.159

CASE 340-01
TO-21 SAC

1-839

0.626
0.200
0.065
0.065
0.225
0.126
0.025
0.610
0.650
0.500
0.166

MJE4340 thru MJE4343NPN, MJE4350 thru MJE4353PNP

1111

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Svmbol

Min

Max

100
120
140
160

-

-

750
750
750
750

-

1.0
5.0

Unit

OFF CHARACTERISTICS
Collector-Eminer Sustaining Voltage (1)
(IC = 200 mAde, IS = 0)

Collector-Emitter Cutoff Current
(VCE = 50 Vde, IB = 0)
(VCE = 60 Vde, IB = 0)
I'ICE = 70 Vde, IB = 0)
(VCE = BO Vdc, IB = 0)

Vde

VCEO(sus)
MJE4340,
MJE4341,
MJE4342,
MJE4343,

MJE4350
MJE4351
MJE4362
MJE4353

MJE4340,
MJE4341,
MJE4342,
MJE4343,

MJE4350
MJE4351
MJE4352
MJE4353

ICEO

I'Ade

-

Collector-Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vde)
(VCE = Rated VCB, VEB(off) = 1.5 Vde, TC = 150°C)

ICEX

Collector-Base Cutoff Current
(VCB = Rated VCB, IE = 0)

ICSO

-

750

I'Ade

Emitter-Base Cutoff Current

lEBO

-

1.0

mAde

15
8.0

35 (TVp)
15 (Typ)
2.0
3.5
3.9

Vde

mAde

I'IBE = 7.0 Vde, IC = 0)
ON CHARACTERISTICS (I)
DC Current Gain
(IC = B.O Ade, VCE = 2.0 Vdc)
(lC = 16 Ade, VCE = 4.0 Vde)

hFE

-

Collector-Emitter Saturation Voltage
(IC = B.O Ade, IS = BOO mAl
(IC = 16 Ade, IS = 2.0 Adc)

VCE(Sat)

Sase-Emitter Saturation Voltage
(IC = 16 Adc, IS = 2.0 Adc)

VBE(sat)

-

Vde

Sase-Emitter On Voltage
(lC = 16 Adc, VCE = 4.0 Vde)

VBE(on)

-

3.9

Vde

fr

1.0

-

MHz

Cob

-

800

pF

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
(lC = 1.0 Adc, VCE = 20 Vdc, Itest = 0.6 MHz)
Output Capacitance
(VCS = 10 Vde, IE = 0, 1=0.1 MHz)
(tl Pul •• T••t: Pulse Width";; 300 ~., Duty Cycl...2.0%.
(2Itr=lhtei •
t

't••

FIGURE 3 - TYPICAL TURN-ON TIME

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
3.0

VCC
+30V

I I

2.0

TJ =250 C
lellB =10 I
VCP30V

1.0

./

O.1

RS

"" 0.5
,3.

51
t r• tf~10 ns
Outy Cycle = 1.0%

0,

~

0.3

~~

O. 2

....

Ir

--

O. 1

-4V

0.01
0.05

RS and RC varied to obtain desired current levels
01 must be fast recovery type, eg:

0.03
0.2

MBD5300 used above IS == 100 mA
MSD6100 used below Ie == 100 mA
Note: Reverse polarities to test PNP devices.

1-840

~

--

fd" VBE(offl = 5.0 V

0.3

0.5 0.1 1.0
2.0 3.0
5.0 1.0
Ie, COLLECTOR CURRENT (AMPI

10

20

MJE4340 thru MJE4343NPN, MJE4350 thru MJE4353PNP

TYPICAL CHARACTERISTICS
FIGURE 4 - TURN·OFF TIME
5.0

r-

'"

TJ' 2S·C
I-IC/lpl0 IB1=IB2
VCE'30V- I--

1

I
........ t,

3.0

'-,.

2. 0

.3
:IE
'"
;::

-'
1.0
["'0"

O.1
O. 5
0.2

0.3

FIGURE 5 - ON VOLTAGES
2.0

~

/

~

.

~ 1.2

'r-..

'"
~
5

V

-

tf

-Tl.Js.~

1.6

>

:>

rjBE fVfE,'
0.4

0.5 0.1 1.0
2.0 3.0
5.0 1.0
IC. COLLECTOR CURRENT lAMP,

10

0.2

~

L

~.~ ~

JCEllt,ll~/iB I. \0

o

20

:::::~

,BEi"t'@ ICII8' 1

0.8

~

2.0 3.0
5.0 1.0 10
0.5 0.1 1.0
'c. COLLECTOR CURRENT lAMP'

0.3

20

DC CURRENT GAIN
FIGURE 6 - MJE4340 SERIES ,NPN)

FIGURE 7 - MJE4350 SERIES (PNP)

1000

1000

Cf

I

---

-

z

'"....
100

i

0It::! ~

:::0

...

-r-.,.

--

-

100

:::0

'"
....
CI

.J;t

--- - --...

z

Cf

'"

.....

.......

'"CI
U

50

VCE
1

20
10

t::±::!TJ

II
02

05

=2 V

- -

10

1

....

='~~~~

~

t:::±:I TJ = 1~~:~

-55°C

I

2.0

II

10
10

5.0

20

02

10

05

FIGURE 8 - COLLECTOR SATURATION REGION
c

~

~ I.6

~

c

I II
I II
Icl.~t- r-

T -25OC

a,OA

lSA

> I.2

~

:IE

~ O.a

~ 0.4
S
~

>

-

55°C
1

2.0

50

IC. COLLECTOR CURRENT lAMPS)

'C. COLLECTOR CURRENT lAMPS)

~ 2.0

,.....,

VCE = 2 V
1

I'-

I'-.

0
0.05 0.01 O. I

0.2

0.3
0.5 0.1 1.0
'B. BASE CURRENT lAMP)

1-841

2.0

3.0

5.0

10

20

MJE4340 thru MJE4343NPN, MJE4350 thru MJE4353PNP

FIGURE 9 - THERMAL RESPONSE

....
c

I'O.IIII~~
-=
-, -n n

O.51--

:E

"'-

WQ

:s:w
o-N

t; ~

wa

";c

~~

c-

C-

BJC(I) r(l) BJC
~
BJC =1.0 o C/W Max
_
o CURVES APPLY FOR POWER _
PULSE TRAIN SHOWN
READ TIME AT 11

D =0.5
O.

o.2

Duly Cycle. 0 - 11/12

.1

-'"""

o.1

o-w
......
>2

.0

~~o.o5

.....
"'0;

.....

::.'" 0.02 ......

~i."gl. ~UIS~

II
0.05

0.1

0.2

TJ(pk)

TC

P(pk)BJC(I)

llt=:2~
I

TTTnT

1111

I

I

-

~

pr.J U L

.01

L

~

0.0
0.02

f.::;:. i:;;:P

0.5

1.0

2.0

5.0
I,TIMElm.1

10

20

50

100

200

1000

500

2000

FIGURE 10 - MAXIMUM F=ORWARD BIAS
SAFE OPERATING AREA
100

;;:-

~

20
10

j

5.0

'"'
~

2.0

~

1.0

B

0.5

:::>

II:

~

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25°C; TJ(pk) IS
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
'at any case temperature by using the appropriate curve
on Figure 9.

.

0.2
0.1
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 11 - MAXIMUM REVERSE BIAS
SAFE OPERATING AREA

REVERSE BIAS
For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most
cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping,'etc.
The safe level for these devices is specified as Reverse
Bias Safe Operating Area and represents the voltagecurrent conditions during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 11
gives RBSOA characteristics.

20

1

"\

1\

\

16

~
~

a
'"
~

12

'\.

80

t-.....

MJE434U1
MJE43S0
I
I
MJE4341
t-MJE43S;'

4.0

20

1-842

-

K1'-..

B
~

TJ=IOOoC ._
VSEloff)';;S V

I\-

-

.1MJE4342
MJE4352

I
~ FlMJE4343

40
60
80
100 120 140 160
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

MJE4353
180

PHP

MPH

®

MJE5180 MJE5170
MJE5181 MJE5171
MJE5182 MJE5172

MOTOROLA

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTOR

6.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON

· .. designed for use in general purpose amplifier !lnd switching
applications.
• Collector-Emitter Saturation Voltage VCEO(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

120. 140, 160 VOLTS
65 WATTS

• Collector-Emitter Sustaining Voltage VCEO(sus)
120 Vdc (Min) - MJE5170, MJE5180
= 140 Vdc (Min) - MJE5171, MJE5181
= 160 Vdc (Min) - MJE5172, MJE5182
• Compact TO-220 AB Package
• TO-66 Leadform Also Availability
MAXIMUM RATINGS
Reting
Collector-Emitter Voltage

120

VCEO

Collector-Base Voltage

VCB

Emitter-Base Voltage

VEB

Collector Current -

MJE5180 MJE5181 MJE5182
MJE5170 MJE5171 MJE5172

Symbol

Continuous
Peak

.
...
...

120

--

IC

Base Current

IB

Total Power Dissipation
@TC=25'C
Derate above 25'C

Po

Total Power Dissipation
@TA = 25'C
Derate above 25'C

Po

Unclamped Inductive
Load Energy (1)

....
..

E

Operating and Storage Junction
Temperature Range

160

Vdc

140

160

Vdc

•

5.0

••

6
10
2.0

•

65
0.52

••

••
•

2.0
0.016
62.5

_ - 6 5 t o +150_

TJ,Tstg

Unit

140

Vdc
Adc
Adc
Watts

wrc

Watts

wrc
mJ

'c

STYlE 1
PIN 1 BASE

2 COlLECTOR

THERMAL CHARACTERISTICS

3 EMITTER
4 COLLECTOR

Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(1) Ie

=

2.8 A, L

TA
4.0

=

50 mHo P.R.F.

=

10 Hz, Vee

FIGURE 1 -

Te
80

Symbol

Max

Unit

R8JC

1.92

'CIW

62.5

'CIW

R8JA

=

10 V. RBE

=

100 n.

POWER DERATING

NOTES
1 DIMENSION H APPLIES TD ALL LEADS
2 DIMENSION L APPLIES TO LEADS 1
AND 3
3 DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED
4 DIMENSIONING AND TDLERANCING PER
ANSI Y14 5M, 1982
5 CONTROLLING DIMENSION INCH
DIM

g

3.0

~

A
8
C

" Ne

60

z:

•

0

~

~

2.0

~

40

r---.....

~

~
~

.e

1.0

20

o
o

F
G
H
J
K
L

t"....

~t-..

•
"

Q

r--....
r-.......: t-....

S
T

U

V
Z

~~

20

40

60

80

100

120

140

160

T. TEMPERATURE lOCI

1-843

i.03

0.080

CASE 221A-02
(TO·220AB)

..

MJE170, MJE171, MJE172, MJE5180, MJE5181, MJE5182

I

IIJ

ElECTRICAL CHARACTERISTICS (TC

= 25'C unless otherwise noted)

Characteristic

Symbol

Min

Max

VCEO(sus)

120
140
160

-

-

0.7
0.7
0.7

Unit

OFF CHARACTERISTICS
Collactor-Emitter Sustaining Voltage (1)
(lC = 30 mAde, IB = 0)

MJE5170, MJE5180
MJE5171, MJE5181
MJE5172, MJE5182

Collactor Cutoff Cu rrent
(VCE = 60 Vde, IB = 0)
(VCE = 70 Vde, IB = 0)
(VCE = 80 Vde, IB = 0)
Collactor Cutoff Current
(VCE = 120 Vde, VEB
(VCE = 140 Vde, VEB
(VCE = 160 Vde, VEB

mAde

ICEO·
MJE5170, MJE5180
MJE5171, MJE5181
MJE5172, MJE5182

-

/'Ade

ICES

= 0)
= 0)
= 0)

-

MJE5170, MJE5180
MJE5171, MJE5181
MJE5172, MJE5182

Emitter Cutoff Current
(VBE = 6.0 Vde, IC = 0)

Vde

lEBO

-

-

400
400
400

-

1.0

30
15

100

mAde

ON CHARACTERISTICS (11
OC Current Gain
(lC = 0.3 Ade, VCE = 4.0 Vde)
(lC = 3.0 Ade, VCE = 4.0 Vde)

hFE

-

Collector-Emitter Saturation Voltage
(lC = 6.0 Ade, IB = 600 mAde)

VCE(sat)

-

1.5

Vde

Base-Emitter On Voltage
(lC = 6.0 Ade, VCE = 4.0 Vde)

VBE(on)

-

2.0

Vde

tr

1.0

-

MHz

Ihlel

20

-

-

DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
(lC = 500 mAde, VCE = 10 Vde, Itest

=

1.0 MHz)

Small-Signal Current Gain
(lC = 0.5 Ade, VCE = 10 Vde, I = 1.0 kHz)
111 Pul•• T.st: Pulse Width" 300 '"", Duty Cycle" 2.0%.
121 tr = ih,.1 • 't••t

'FlGURE 2 - SWITCHING TIME TEST CIRCUIT

FIGURE 3 - TURN-ON SWITCHING TIMES
5000

VCC
+30V

3000 f- NPN
PNP -_:2000
SCOPE

Ra

.......

1000

..... 1--'"

g
~

0,

51

Ir

~

1=

b-. r-.....

Ir' II '" 10 ns
DUTY CYCLE = 1.0%
- 4.0 V
Ra and RC VARIED TO OaTAIN DESIRED CURRENT LEVELS

- ..

'"

Id (a VBEloffl = 5.0 V
-I"TC 25'C
VCC 30 V
Iclla 10
50
0.2 0.3
0.5 O} 1.0
2.0 3.0
5.0 7.0
0.1
IC, COLLECTOR CURRENT lAMPS)

-

100

0, MUST aE FAST RECOVERY TYPE, ego
MaD5300 USED AaOVE la = 100 mA
MSDS100 USED aELOW la = 100 mA
'FOR PNP'S REVERSE ALL POLARITIES

FIGURE 5 - CAPACITANCE

FIGURE 4 - TURN-OFF SWITCHING TIMES
300

10000
NPN
PNP --

"'S:

t'-..

-

VCC = 30 V
Iclla = 10
200
lal = la2
TJ = 25'C
100
0.,
0.1

~

100

~

70

~

.- -

TJ

r-

~

oS

0.5
1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT lAMPS)

I

200

"-

.....

If

-

r---.

-

Is

10

1-844

30
0.5

-~
-+-Cob

50

S.O 8.0 10

~ 2~'C- t--f-

1.0

-..

2.0 3.0
5.0
10
VR, REVERSE VOLTAGE IVOLTS)

-20

30

50

MJE170, MJE171, MJE172, MJE5180, MJE5181, MJE5182

III

TYPICAL ELECTRICAL CHARACTERISTICS
NPN -

MJE5180. MJE5181. MJE5182

PNP -

FIGURE 10 - COLLECTOR SATURATION REGION
2.0

;

~

~
o

...

IC = 1.0A

1.2

3.0 A

6.0 A

1\

0.8

g

10

SOO

100
200
lB. BASE CURRENT (mA)

1000

FIGURE 12 - COLLECTOR-EMITTER SATURATION REGION

~

0.2

~

II

I

~ 0.6

8

25'C~

"

./

~ p-

Iclla

~ 0.8

~
~

:0

0.6
150'C/
0.4

25'C _____

ti 0.2

g

-:::::

0.1

lelia

1.2

u

0.4 0.6 O.B 1.0
2.0
4.0
IC. COLLECTOR CURRENT (AMPSI

0.2

6.0 B.O 10

~

~

0.4 0.6 0.8 1.0
2.0
IC. COLLECTOR CURRENT (AMPS)

4.0

6.0 B.O 10

FIGURE 15 - BASE-EMITTER VOLTAGE
1.4

I.
//1

= 10

IdlB

= 10

//,
~ /,

CJ



+ 150'CL l

10.1

~

3.0A

\

~

~

!!l 0.8

0.4

1.0A

~ 1.0

~

IS

=

\

\

0 0.4
u
w 0.2
.J;: 0

in 1.0

:0
'I'

IC

f·8

so

20

~

~ 1.2
:0

........

~ 0.2

=- o

~

~

\

\

8 0.4

\

1\

1.6

~

~

~
~
:0

2.0

\

~
;:;; 1.6
~

MJE5170. MJE5171. MJE5172

FIGURE 11 - COLLECTOR SATURATION REGION

-55'C

-

- -...:r-

-

0.4
0.1

25'C

~~

V/

~

V

-55'C

/

-I-

V

• 1~'C

~

~

0.2

0.4 0.6 O.B 1.0
2.0
IC. COLLECTOR CURRENT (AMPS)

25'C

I-- V

,..- f-"""

rtT

I-r-

+1U,C

./

./
./

J..I..W"'"
4.0

0.4
0.1

6.0 8.0 10

1-845

--l0.2

0.4

I II

0.6 O.B 1.0
2.0
4.0
IC. COLLECTOR CURRENT (AMPS)

6.0 8.0 10

MJE170, MJE171, MJE172, MJE5180, MJE5181, MJE5182

OJ

FIGURE 6 - THERMAL RESPONSE
C 1.0

;
_

0.7
0.5

D

0.5

-

o

~ 0.3
t'j
~

,......

0.2

0.2

~

~

0.1

~

0.1
;J, 0.07
~ 0.05
:J:

0.05

-

0.02

--....- ~

::: 0.03
z
~ 0.02

g

Plpkl

-r~~

....-

I-

DUTY CYCLE, D = 111t2

IIII

""-SINGLE PULSE

0.01

'"

~

-

tnn

?

0.01

0.02

0.05

0.1

0.5

0.2

1.0

2.0
5.0
I, TIMElmsl

I J j II

I

10

Z8JCIII = rill R8JC
R8JC = 3.125'CIW Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpkl - TC = Plpkl Z8JClti

50

20

100

II
200

500

1.0 k

RGURE 7 - ACTIVE-REGION SAFE OPERATING AREA
10
70

5 Oms

0:- 5 0

!

30

...

r--r-~J~l~O~~

r', \I
I\,

ffi 2 a ~-- SECOND BREAKDOWN LIMIT
~

- - - BONDING WIRE LIMIT

::>

~ 10 F= --- THERMAL LIMITCci TC
ISINGLE PULSEI
:= 07 ~

1\

de

05 ~ CURVES APPLY BELOW RATED VCEO

u

03

si

o5ms

'\.

25'C

~

o

10
ms

0.2
01
20 3 0

5 0 7 0 10
20
30
50 70 100
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTS)

200

There are two limitations on the power handling ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC-VCE limits of the transistor that must be observed
for ,reliable operation; Le., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 150'C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) .;; 150'C. T J(pk) may be calculated from the data
in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

TYPICAL ELECTRICAL CHARACTERISTICS
NPN -

MJE5180, MJE5181, MJE5182

PNP -

500

400

300
200
:z

8 5'C
=
55'C

-

t"-- TJ

~ 100
I-

15
:Ii
:::>
u

2l

i

500
300

150'C

-

VCE

=

4.0 V

~

'"
~
:::>

I,

~

1\
0.1

0.03

TJ

=

150'C
25'C

r-

~ 100

10
10
7.0
5.0
0.1

r--

200

70
50

30

MJE5170, MJE5171, MJE5172
FIGURE 9 - DC CURRENT GAIN

FIGURE 8 - DC CURRENT GAIN

0.5 0.7 1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT IAMPSI

I-

70
50

'-'
'-'

30

'"i

~~

6.0 B.O 10

1-846

,........

....... I"

20
10
B.O
6.0
5.0 0.1

r-.....

-55°C

0.2

0.3 0.4 0.5 0.7 1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT lAMPS)

6.0 8.0 10

®

MJE5730
MJE5731
MJE5732

MOTOROLA

HIGH VOLTAGE PNP SILICON POWER TRANSISTORS

1.0 AMPERE

· .. designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

POWER TRANSISTORS
PNP SILICON

• 300 V to 400 V (Min) - VCEO(sus)
• 1.0 A Rated Collector Current
• Popular TO-220 Plastic Package

300-350-400 VOLTS
40 WATTS

• TO-66 Leadform Available
• PNP Complements to the TIP47 thru TIP50 Series

~I-S

Symbol

Rating
Collector-Emitter Voltage

VCB

Emitter-Base Voltage

VEB
Continuous
Peak

IC

Base Current

IB

Total Power Dissipation
@TC = 2S"C
Derate above 2S"C

Po

Total Power Dissipation
@TA= 25"C
Derate above 2S"C

Po

Unclamped Inducting Load
Energy (See Figure 10)
Operating and Storage Junction
Temperature Range

MJE5730 MJE5731 MJE5732

VCEO

Collector-Base Voltage

Collector Current

r~B
!
II
L..l
t

A

MAXIMUM RATINGS

E
TJ,Tstg

..
..
...
....

Unh

300

350

400

Vdc

300

350

400

Vdc

5.0
1.0
3.0

•

Vdc

~

Adc

~

Adc

~

Watts

•

1.0

..

40
0.32
2.0
0,016
20

wrc

•
•

Watts

wrc
mJ

_-65to+150_

·C

THERMAL CHARACTERISTICS
Symbol

Max

Unh

Thermal Resistance, Junction to Case

RIIJC

3.125

OC/W

Thermal Resistance, Junction to Ambient

RIIJA

62.5

"C/W

Characteristic

F

+

,"';J,

u

~Dr!:
i=1!i
sm " Z

K

J

-:Jt~

STYLE I
PIN I BASE
2 COLLECTOR
3 EMITTER
4 COLLECTOR

,

j~N'
't~
j

NOTES
I DIMENSION H APPLIES TO ALL LEADS
2 DIMENSION L APPLIES TO LEADS I
AND 3
3 DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED
4 DIMENSIONING AND TOLERANCING PER
ANSI YI4 5M, 1982
5 CONTROLLING DIMENSION INCH
DI.
A
B
C
D
F

G
H

J
K
l

•
•
D

S
T
U

V

Z

CASE 221A-02
TO-22OAS

1-847

l---r

MJE5730, MJE5731, MJE5732

I

ELECTRICAL CHARACTERISTICS

(TC

= 25"<: unless otherwise noted)

I

Characteristic

Min

Symbol

Max

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 30 mAde, Ie = 0)

Collector Cutoff Current
(VCE = 200 Vde, Ie = 0)
(VCE = 250 Vde, Ie = 0)
(VCE = 300 Vde, Ie = 0)
Collector Cutoff Current
(VCE = 300 Vdc, VeE
(VCE = 350 Vde, VeE
(VCE = 400 Vde, VeE

Vde

VCEO(sus)
MJE5730
MJE5731
MJE5732
ICEO

mAde

-

MJE5730
MJE5731
MJE5732

1.0
1.0
1.0

-

ICES

= 0)
= 0)
= 0)

-

300
350
400

Emitter Cutoff Currl!nt
(VeE = 5.0 Vde, IC = 0)

mAde

-

MJE5730
MJE5731
MJE5732
IEeO

1.0
1.0
1.0
1.0

mAde

ON CHARACTERISTICS '11
DC Current Gain
(lC = 0.3 Ade, VCE
(lC = 1.0 Ade, VCE

-

hFE

= 10 Vde)
= 10 Vde)

150

30
10

Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, Ie = 0.2 Ade)

VCE(sat)

Base-Emitter On Voltage
(lC = 1.0 Ade, VCE = 10 Vde)

VeE(on)

-

Current Gain - Bandwidth Product
(lC = 0.2 Ade, VCE = 10 Vde, f = 2.0 MHz)

for

10

Small-Signal Current Gain
(lC = 0.2 Adc, VCE = 10 Vdc, f

hfe

25

-

1.0

Vde

1.5

Vde

DYNAMIC CHARACTERISTICS

= 1.0 kHz)

-

MHz

-

11) Pulse Tost: Pulsowidth .. 3OO,.s. Duty Cycle" 2.0%.

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR-EMITTER SATURATION VOLTAGE

200

'00

=T} - ',solc

.'" 50 =z

g

i

5.0

g

3.0
2.0
0.02 0.03

D.'

0.2

0.3

0.5

1.0

I

1

"
0.05

II

I II
il

1.0

~ 0.8

~

:l!

10

I I

w

'"~

30 c-- r-. 55'C

""

1.4

~ 1.2

P25'C

!Z 20
::>
u

in
!:i

VCE = 10V

I

TJ = 25'C

~I

06
.
~ 0.4

I

cl
~O.2

JJII'

2.0

IC. COLLECTOR CURRENT ,AMPS)

1-848

o

, 55 /j1-50~

-

VCE!.,tl (jL

0.02 0.03

0.05

'd's

5.0

0.1
0.2 0.3
0.5
IC. COLLECTOR CURRENT (AMPS)

1.0

2.0

MJE5730,MJE5731,MJE5732

1.4
1.2

I I
I I
I I

i!! 1.0

TJ = -55'C

is

f - VBElsal) @ IC/IB

5.0

~0.8
~

~
~ 0.6

i--

:> 0.4

--

0.02

0.03

0.05

I

10

~

"\. I'-..:

08

I25'C

t'\.

~

'"z

~

'"

0.1
0.2 0.3
0.5
IC. COLLECTOR CURRENT lAMPS}

THERMAL " \
DERATING

04

DERATING

I---

!"\.

"

02

~

2.0

1.0

SECO~O BREAK~OWN

~

"-I\- ""- f'.....

'"'"t; 06

V

,/

150'C

0.2

o

..

FIGURE 4 - NORMALIZED POWER DERATING

FIGURE 3 - BASE-EMITTER VOLTAGE

25

50

'"

100
125
150
75
TC. CASE TEMPERATURE I'C}

175

FIGURE 5 - FORWARD BIAS SAFE OPERATING AREA
-

10.0

..

5.0
1L

~ 2.0

e-

z

1.0

I

0.5

a~

25'C

TC

::21 -

~0.05

--- -

--

"100 I'-!

de

1.0~ ~001'-!_

",-

BONDING WIRE LIMIT
- - THERMAL LIMIT
SECOND BREAKDOWN LIMIT

--

MJE5730
MJE5731
MJE5732 10
20
30
50
100
200
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)

0.02
0,01
5.0

~

300

500

There are two timitations on the power handling ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC-VCE limits of the transistor that must be observed
for reliable operation; i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
"
The data of Figure 5 is based on TJ(pk) = 150'C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk)" 150'C. TJ(pk) may be calculated from the data
in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

FIGURE 6 - THERMAL RESPONSE
510

~

07

~

03

~ 05

J--

0- 0 5

~ 02

'"
~

01

~ 007
~ 005

i

003

g

'" 0 02
~

~

01

F= F

F

I--:: ~ ::;::;

.....

02

~

.-

Plpk}

fJ1J1

J.--i--

---~I=1

=005

~

t
~P

12_
TJlpkl - TC
DUTY CYCLE. 0 ~ IJ /12

D02..-

O~V

P'

001

002

= Plpk) R9JCII)
I

SINGLE PULSE

1111

I II

001

R9JCII) = rll) R9JC
RruC = 3.1 25'CIW Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT II

01

02

05

10

20
I. TIME Imsl

1-849

50

10

I

I I 111111
20

50

100

I I

I
200

I
SOD

lk

MJE5730, MJE5731, MJE5732

FIGURE 7 - SWITCHING TIME EQUIVALENT CIRCUIT

VCCo-------~~--------~

RC
Scope

RB
Yin 0 - -.....--"""11/'.---._-1

11 '" 7.0 ns
100 '" t2 < 500 JJ.S
13 < 15 ns

I

I

I

I
I

I
I

I

I

I

I

51

I

I

r---12--1

Cjd «Ceb

13 J---- Approx. + 9.0 V
Duty Cycle ~ 2.0%

':'

+4.0 V

I
I
-I----t-----I

I

Turn-Off Pulse

RGURE 8 - TURN"()N RESISTIVE SWITCHING TIMES

FIGURE 9 - RESISTIVE TURN-OFF SWITCHING TIMES

1.0

5.0

0.2

j

0.1

~

-

-..

Id

"

! 0.05

1.0

:1
'"

:;;
;=

-

-' 0.03

0.02
0.0 1
0.Q2 0.03

3.0
2.0

TJ 25'C - VCC 200V- Idls ~ 5.0'-

0.5 ~ I,
0.3

0.05

0.1

0.2

0.3

-

TJ 25'C - I VCC = 200 V- J--ICIIS = 5.0 - J---

-

Is

"~

0.5

"

0.3
0.2

r--.
I'--.

0.1
0.5

1.0

2.0

0.05
0.02 0.03

0.05

0.1

0.2

0.3

1.0

0.5

2.0

IC. COLLECTOR CURRENT (AMPS)

IC. COLLECTOR CURRENT (AMPS)
FIGURE 10 -INDUCTIVE LOAD SWITCHING
Tost Circuit

ovi
Input

Vcc - 20 V
Input

Ie

Monitor

i

:~100 ms - - - - . I

:

I

I

I

1

I

I

I

I

I

I

cOllect~~63A~_:---1
--------1-- 1 - - Current

oV

I

I

I

I

I

I

VCEA--t--- I
COllector:
Voltage
I
I
I
10 V
I

Note l: Input pulse width is increased until 'eM'" 0.63 A.

2: For PNP te.ting, all polarities ar. reversed.

VCE(sat)--

1-850

(S •• Note 1)

r-----I I
U
U
,.
I'

-,

Voltage -5 V __

100mH

Voltage end Current Waveforms
I
I
tw:::;::: 3m.

I

'---------1-- _I
:
I
I
I
I

I

--

®

MJE5740
MJE5741
MJE5742

MOTOROLA

NPN SILICON POWER DARLINGTON TRANSISTORS
The MJE5740, 41,42 darlington transistors are designed for high·
voltage power switching in inductive circuits. They are particularly
suited for operation in applications such as:
• Small Engine Ignition

SAMPERE

NPN SILICON
POWER DARLINGTON
TRANSISTORS
300,350,400 VOLTS
aoWATTS

• S)Nitching Regulators
•

Inverters

• Solenoid and Relay Drivers
• Motor Controls
MAXIMUM RATINGS
Symbol

Rating
Collector-Emitter Voltage

VcEOlsusl
VCEV

Coliector·Emitter Voltage
Emitter Base Voltage

'1; a

MJE5740 MJE5741 MJE5742
300
350
400
700
SOO
600
S_
I

Collector Current

Unit

Vdc
Vdc
Vdc
Adc

- Continuous

•I

IC
ICM

Peak (1)
Base Current Continuous
Peak (1)

Total Power Dissipation
@TA = 25DC
Derate above 250C
Total Power Dissipation
@TC = 25°C
Derate above 250C
Operating and Storage Junction
Temperature Range

18

I

IBM
PD

I

S162.55_

Adc

216-

Watts
mW/oC

SO_
_640_
_
-66 to +150_

Watts
mW/oC

I

I

PD
I

TJ, Tstg

°c

THERMAL CHARACTERISTICS
Ch.acteristic

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

Symbol

Max

Unit

R8JC
R8JA

1.56
62.5

°C/W
DC/W

TL

275

DC

Maximum Lead Temperature for Soldering Purposes:
liS" from Case for 5 Seconds
(1) Pulse Test: Pulse Width

=5

ms, Duty Cycle";; 10%.

~

""

"t;'"

~ 60

"""

'"z;::

~

'""

Thermal
40

3

:r

20

20

40

~

1t~

STYLE 1
PIN 1.
2.
3.
4

Deratin~

'"""""

K
L
N
0
R

60
80
100
120
Te. CASE TEMPERATURE (DC)

"""

['-

S
T
U

V
Z

I'..

140

160

1-851

1~;- ~

I

Dj~N'~~

BASE
COLLECTOR
EMITTER
COLLECTOR

J

~

grt

F

ot!n~L-T
0
F
G
H

Second Breakdown Derating

~~

u

C

~~

~ 80

r~ ll]t2

DIM
A
B

FIGURE 1 - POWER DERATING
100

1~fS c

MILLIMETERS
MIN
MAX
1460 1575
965 1029
406
482
064
089
373
361
241
267
279
393
036
056
1270 1427
114
139
483
533
254
304
204
279
114
139
648
5.97
000
127
114
2.03
-

::::j

L

INCHES
MIN
MAX
0575 0620
0380 0405
0160 0190
0025 0035
0142 0147
0095 0105
0110 0155
0014 0022
0500 0562
0045 0055
0190 0210
0100 0120
0080 0.110
0045 0.055
0235 0.255
0.000 0.050
0045
- 0.080

CASE 221A-02
TO-220AB

MJE5740, MJE5741, MJE5742

ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted.1
Symbol

Min

Typ

Max

Unit

VCEO(su,1

300
350
400

-

-

Vde

-

-

1

Characteristic

OFF CHARACTERISTICS (1)
MJE5740

Collector-Emitter Sustaining Voltage

(lC

= 50 mA,

IS

= 01

MJE5741
MJE5742

Collector Cutoff Current

(VCEV
(VCEV

mAde

ICEV

= Rated Value, VSE(offl = 1.5 Vdel
= Rated Value, VSE(offl = 1.5 Vde,

TC

= 1000CI

Emitter Cutoff Current

IESO

5
75

mAde

(Ves = 8 Vde, IC = 01
SECOND SREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 6

Clamped Inductive SOA with Base Reverse Biased

See Figure 7

ON CHARACTERISTICS (11
DC Current Gain

-

hFE

= 0.5 Ade, VCE = 5 Vdel
(lc = 4 Ade, VCE = 5 Vdel

(lC

Collector-Emitter Saturation Voltage

(lC = 4 Ade, IS = 0.2 Adel
(lC = 8 Ade,IS = 0.4 Adel
(lC = 4 Ade, IB = 0.2 Ade, TC
Base-Emitter Saturation Voltage

100
400

-

-

-

2
3
2.2

-

-

-

Vde

VCE(satl

= 1000CI

-

Vde

VSE(satl

(lC =4 Adc, IB = 0.2 Adcl
(lC = 8 Adc, IS = 0.4 Adcl
(lC = 4 Ade, IS = 0.2 Ade, TC
Diode Forward Voltage (21
(IF

50
200

= 1000 CI
Vf

-

td
tr

-

-

2.5
3.5
2.4
2.5

Vdc

0.04

-

,

0.5

-

~.

8.0
2.0

-

IlS

-

Il'

-

= 5Adel

SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 11
Delay Time
(VCC = 250 Vde, IC(pkl =SA
Rise Time
lSI = IS2 = 0.25A, tp = 25 ~s,
Storage Time
Duty Cycle ';;1 %1
Fall Time

IS
tf

..

Inductive Load, Clamped (Table 11

I
I

(lC(pkl = SA, VCE (pkl = 250 Vdc
Crossover Time
IBI = O.OS A, VBE(offi = 5 Vdc 1
(11 Pulse Test. Pulse WIdth - 300"s, Duty Cycle -- 2%.
Voltage Storage Time

-

Isv

I

-

I

Ie

I

4.0
2.0

I

-

IlS
IlS

I

(2) The internal Collector-ta-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

FIGURE 2 - INDUCTIVE SWITCHING MEASUREMENTS
IC(~

/

,/'
IC/

V

1

:,

90% VCE(pkl

I- I--'sv

trY

~EIPkl_ r--

A1\ 90% IC

1-1 Pt'fl- 1-"1-

---J '-'c~ !-

/
VCE

1091 VCElpkl

I B - I-- 90%IBI

I"\,

10% ..... 1-1-2% IC
IClpkl

-- --\- -- -- -- -- -

"

~

FIGURE 3 - DC CURRENT GAIN
2,000

II

1,000

~VCE-5.0V - I 150'C

+25 OC

z

;j'

'"....
~

"'a

./

--

-55'C

V

./

100

/

~

'-'
c

:#

-

/

~

10
0.1

TIME

1-852

v

v

./
2.0
1.0
IC, COLLECTOR CURRENT IAMPSI

5.0

10

MJE5740, MJE5741, MJE5742

III

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

IN4933

0.001

+Vcc

33 IN4933

~F

Fwl

Vcl emp

Duty Cycle <: 10%
tf" 10 nl

·Selected for ;OJ 1 kV

t,.

-4.0 V

NOTE
PW and Vee Adjusted for Desired
Rs Adjusted for O.,lred IS1

'e
-VBE(offl

Coil Data:
Ferroxcube Core #6656

GAP for 200 jlH/20A

Leo" - 200 ~H

Full Bobbin (-16 Turns) #16

Vcc = 30 V

Vec = 250 V

VCE(pkl = 250 Vdc

01"" 1N5820 or Equiv.

IC(pkl = 6A

OUTPUT WAVEFORMS

~

t 1 AdJusted to
ObtaIn Ie

II:

...ow

Test Equipment
Scope - Tektronix
475 or Equivalent

LcO,IIiCpk l
'1'"
VCC

iIii

< 10 n.
Dutv Cvcl. "" 1 .0%

LCO,IIiCpkl

w

t2 ==

I-

t r . tf

Vel amp

RS and RC adjusted
for de.ired I e and Ie

TYPICAL CHARACTERISTICS
FIGURE 5 - COLLECTOR SATURATION VOLTAGE

FIGURE 4 - BASE·EMITTER VOLTAGE
2.4

'"~
0

~
w

'"~
0

>

'"

1.0

'"

~

+2}OC

1.4
1.2

:i

-550~

I.B
I.S

~

O.B

0

hFE=20

2.0

I:
~

§

2.2

I-'"

~
w

I--- '-"I.-'

~

1.4

>

1.2

0

V-

......'"
~
w

i,...... . /

+150 o

V

:::::
0

...... 1-

0.4
2.0
5.0
0.5
1.0
IC. COLLECTOR CURRENT (AMPSI

1.0
O.B

~

0.6

rl
>

0.2

8

0.6
0.2

hFE=20
I.S

to

........ ~

I---r

1.8

10

1-853

0.4

0.1

-55t

+ 25Cl C

-

..... V~
[:....-: t:::::

I---

I...- ~I-

+150oC

,II

II
0.2

2.0
0.5
1.0
IC. COLLECTOR CURRENT IAMPSI

5.0

10

MJE5740, MJE5741, MJE5742

OJ

SAFE OPERATING AREA INFORMATION

The Safe Operating Area figures shown in Figures 6 and 7 are
specified ratings for these devices under the test conditions shown.

FORWARD BIAS
FIGURE 6 - FORWARD BIAS SAFE OPERATING AREA
16
10
8.0

~

"...::>
~
a

100~=E

3.0

..... ......

1.0

0

~
:3

10jJS

.¥

0.5
0.3

'"

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC- VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate .
The data of Figure 6 is based on TC = 25 0 C;TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid' for duty cycles to 10% but must be
derated when TC ;;. 25 0 C. Second breakdown Iimitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found
at any case temperature by using the appropriate curve
on Figure 1 .

~

......

1 mS"",, 0- fd':-"" ~ 5mS-

- - - Bonding Wire Limit
~~ - Thermal Limit (Single Pulse)
0.1
~.-- Second Breakdown limit
~
0.05
Curves apply below rated VCEO

.......

=

~iE5742
MJE5741

....

MJE5740

0.02
5.0

10

r-

20
50
100
200
VCE. COLLECTOR-EMITTER VOLTAGE IVolts)

400

REVERSE BIAS

For inductive loads, high voltage and high current must
be sustained simultaneously during turn·off, in most
cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must. be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn-off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 7
gives the complete R BSOA characteristics.

FIGURE 7 - REVERSE BIAS SAFE OPERATING AREA
S.O

~

7.0

~
a'"

60

::>

'"

I""

.........

"-

f- VSElofj) ,,5.0 V
5.0
TJ = 100 0 C
4.0

0

~

MJE5740

3.0

:3
~

~

2.0

~

MJ~5741

V

MJE5742

V

-'"

.-- ~

1.0

o

o

100
200
300
400
VCE. COLLECTOR·EMITTER VOLTAGE IVolts)

500

RESISTIVE SWITCHING PERFORMANCE
'FIGURE 8 - TURN·ON TIME

FIGURE 9 - TURN·OFF TIME

II

10
1.0 f - ~Ir
0.7
0.5

70
5.0

r=

~

.
w

0.3

,/

0.2

VCC = 250 V ~
lSI = IS2
iC/f8=20

3.0

~

,.

0.1

:---.

0.03
0.02
0.2

0.5

'"

1.0
If

0.3
0.2

i
0.3

/

2.0

0.7
0.5

Id

0.07
0.05

VCC= 250V
181- 182
IC1I8=20

w

l=

l=

Is

2.0 3.0
5.0 7.0
0.7 1.0
IC. COLLECTOR CURRENT lAmps)

0.2

10

0.3

0.5 0.7

10

2.0

3.0

5.0

IC. COLLECTOR CURRENT lAmps)

1-854

7.0

10

®

MJE5850
MJE5851
MJE5852

MOTOROLA

Designprs Data Sheet

III

8 AMPERE

PNP SILICON
POWER TRANSISTORS
300,350,400 VOLTS
80 WATTS

SWITCHMODE SERIES
PNP SILICON POWER TRANSISTORS
The MJE5850, MJE5851 and the MJE5852 transistors are
designed for high-voltage, hIgh-speed, power switching in inductive
circuits where fall time is critical. They are particularly suited for line
operated switch mode applications such as:
•

Switching Regulators

•

Inverters

•

Solenoid and Relay Drivers

•

Motor Controls

•

Delfection Circuits

DeSIgner's Data for
"Worst Case" Conditions
The DeSIgners Data Sheet per·
mlts the deSIgn of most cirCUIts
entirely from the informatIon pre·
sented. Limit data - representIng

Fast Turn-Off Times
100 ns Inductive Fall Time @ 25°C (Typ)
125 ns Inductive Crossover TIme @ 25°C (Typ)

deVice characteristIcs boundaries are gIven to facilItate "worst case"
deSIgn.

Operating Temperature Range -65 to +150°C
100°C Performance SpecifIed for:
Reversed BIased SOA with InductIve Loads
Switching Times wIth Inductive Loads
Saturation Voltages
Leakage Currents

A

MAXIMUM RATINGS
Symbol

MJE
5850

MJE
5851

MJE
5852

Unit

Collector· Emitter Voltage

VCEOlsus)

300

350

400

Vdc

Collector-Emitter Voltage

VCEV

350

400

450

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current - -Continuous

IC
ICM

8.0
16

Adc

'B
'BM
Po

40
8.0

Adc

Peak 11)
Base Current -

Continuous

Peak III
Total Power Dissipation

80

Watts

@TC=25°C
0.640

W/OC

-6510150

°C

Derate above 25°C
Operating and Storage Junction
Temperature Range

TJ, Tslg

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: l/SH from Case for 5 Seconds

f
,]0
S

=

Rating

~~
I/'V
F-,~It

I =1r----.c

rlU

~n L-T
j"CT'"

1t~
DIM
A
B
C

0
F
G
H
J
K
L
N

Max

Unit

R8JC

1.25

°C/W

Q

TL

275

°C

5
T

R
U
V

Z

1-855

I ,"1t;"' ~

lu

STYLE 1
PIN 1 BASE
2 COLLECTOR
3 EMITTER
4. COLLECTOR

Symbol

(1) Pulse Tesl: Pulse Widlh = 5 ms, DUly Cycle .. 10%.

Q

Dj~N'~~
j

L

NOTES
lOlMEt/SiONHAPPLlESTQALLLtAOS
2 OlMENS10N l APPliES TO LEAOS 1
AND 3

MILLIA TERS
MIN
MAX

INCHES
MIN
MAX

1160 1575 0575
965 10 29 0380
4 06
482 0160
064
089 0025
361 ' 373 0142
241
Z 67 0095
279
393 0110
036
056 0014
1270 1427 0500
114
139 0.045
483
533 0190
3.04
100
254
2 04
2.79 0.080
1.14
1.39 0.045
6.48 0.235
5.97
1.27 Q.QOO
0.00
0.045
1.14
2.03
CASE 221A·02
TO·220AB

a

0620
0405
0190
0035
0147
0105
0155
0022
05&2
0055
0210
0.120
0110
0055
0.255
0.050
0.080

MJE5850, MJE5851, MJE5852

IIJ
I

ELECTRICAL CHARACTERISTICS ITc = 25°C unless otherwise noted)

I

Characteristic

Typ

Max

400

-

-

-

0.5
2.5
3.0

mAdc·

-

1.0

mAde

Symbol

Min

VCEO(sus)

300
350

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voliage
(lC= 10 mA.IB=O)

MJE5850
MJE5851
MJE5852

Collector Cutoff Current
(VCEV = Rated Value. VBE(off) = 1.5 Vde)
(VCEV = Rated Value. VBE(off) = 1.5 Vdc. TC = 100°C)

ICEV

Collector Cutoff Current
(VCE = Rated VCEV. RBE = 50

ICER

-

lEBO

-

n. TC = 100°C)

Emitter Cutoff Current
(VEB = 6.0 Vdc. IC = 0)

Vdc

mAdc

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with base reverse biased

See Figure 12
See Figure 13

'ON CHARACTERISTICS
DC Current Gain
(lc = 2.0 Adc. VCE = 5 Vdc)
(IC = 5.0 Adc. VCE = 5 Vdc)

-

hFE

Collector-Emitter Saturation Voltage
(IC = 4.0 Adc. IB = 1.0 Adc)
(lC = 8.0 Adc. IB = 3.0 Adc)
(lC = 4.0 Adc. IB = 1.0 Ade. TC = 100°C)

VCE(sat)

Base-Emitter Saturation Voltage
(IC = 4.0 Adc. IB = 1.0 Adc)
(lC = 4.0 Adc. IB = 1.0 Adc. TC;' 100°C)

VBE(sat)

-

15
5

-

-

-

-

-

2.0
5.0
2.5

-

-

1.5
1.5

0.025

0.1

I's

0.100

0.5

I's

-

Vdc

Vdc

-

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc. IE = O. ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Rise Time

(VCC = 250 Vdc. IC = 4.0 A. IBI = 1.0 A.
tp = 50 I's. Duty Cycle .. 2%)

td
tr

Storage Time

(VCC = 250 Vdc. IC = 4.0 A. IBI = 1.0 A.

ts

-

0.60

2.0

I'S

Fall Time

V BE(off) = 5 Vdc. tp = 50 I's. Duty Cycle .. 2%)

tf

-

0.11

0.5

"s

tsv
tc

-

0.8

3.0
1.5

I's

0.4

tfi

-

0.1

-

I's

0.5
0.125

-

I'S

DelayTima

Inductive Load. Clamped (Table I!
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
fall Time

(lCM = 4A. VCEM = 250V.IBI = 1.0A.
VBE(off)= 5 Vdc. TC = 100°C)

tsv
tc

(ICM = 411.. VCEM= 250V.IBI = 1.0A.
VBE(off) = 5 Vdc. TC = 25°C)

tfi

• Pulse Test: PW = 300 I's. Duty Cycle .. 2%

1-856

-

-

0.1

I'S

I's
I'S

MJE5850, MJE5851, MJE5852

III

TYPICAL ELECTRICAL CHARACTERISTICS

fiGURE 2 - COLLECTOR SATURATION REGION

fiGURE 1 - DC CURRENT GAIN
_ 2.0

200t-- ......

Z

70
50 I---- TJ - 25°C

....

30

~

:li
~

20

B
g

10

tf!

'">~

VCE

'"

:>

1.6

IC =0.25 A

=5 V

~

1\

'"
g

1\
TJ= 25°C

0.8

1\

c

0.4

\

\

\

=

:3

3.0

rl

>
0.2

0.3

0.5 0.7 1.0
2.0
3.0
IC. COLLECTOR CURRENT (AMPS)

5.0

7.0

0

001 0.01

10

fiGURE 3 - COLLECTOR·EMITTER
SATURATION VOLTAGE
2.0

'"
~
'"
~

1.6

1.6

~ 1.2

~

'"

TJ = 150°C

Q

g

---

0.4

8

rl

0

0.1

-

.-----

'"
""

~ 08 -TJ =25°C

II

,,:
04

YTp 25°C
5.0

-

>

Y

0.3
0.5 0.7 1.0
2.0 3.0
IC. COLLECTOR CURRENT (AMPS)

0.2

5.0

7.0

o

10

~

7

f..---

TJ = 150°C

01

0.2

0.3

05 07

1.0

2.0

50

30

~ 10
~
~

a
'"'"
~

...

I

200 0

/

4

1---

TJ = 25°C
C,b

100 0
TJ =150°C

V

10

FIGURE 6 - CAPACITANCE
3000 _ 1 -

...

7.0

IC. COLLECTOR CURRENT (AMPSI

fiGURE 5 - COLLECTOR CUTOff REGION

/

10

/

w

U! 0.8

>

2.0

Ic/la =4

~ 1.2

:i

j

o 10 0.20
050
I0
la. aASE CURRENT (AMPS)

~

Ic/la = 4

Q

0.05

I-

FIGURE 4 - BASE·EMITTER VOLTAGE

g 2.0
U.I

5.0A

1.2

'"

~

~

0.1

2.5A

LOA

w

7.0
5.0

2.0

1 1

~

'" ~

1IT
111

1 1

~

TJ =150°C-I-

100

/
~ 500

103

z

;:!:
2
10

I-

100°C

U

VeE" 200 V-=

8

~ 10

II=!!=·REVERSE

of-+ 25°C

100

FORWARO

0

L/

10

+0.2

t-.!:0b

~ 200

11

+0.1

-0.1
-0.2
-0.3
VaE. BASE-EMITIER VOLTAGE (VOLTS)

-04

30 0.102

-0.5

0.5

10

5.0

10

20

50 100

VR. REVERSE VOLTAGE (VOLTS)

1-857

200

500 1000

MJE5850, MJE5851, MJE5852

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

RBSOA AND INDUCTIVE SWITCHING

VCEOlsus)

+V

50

RESISTIVE SWITCHING

~F

+~
0.1 jlF

-=.
TURN ON TIME

-10V~'

500 n

20
III

2

zc

+oVJL

-2
0

tal ;adjusted 10

n
Y2W

50n
2W

0

~F

Input

~2

a..!:

1t500
0.1

°LI

~O
;:)-

%W

PW Varied to Attain

0.2

Ie'" 100mA

Obtain the forced
"FE deSired
TURN OFF TIME
Use Induct'''. SWitching

~F

O.1IJF

dr.ver as the Input 10

L---------+--~~o~: Jl
-v

the reSI5t"". test CirCUit

-v

adjusted to obtain deSired 181

+V adjusted to obtain desired VSE(off)

LeaH"" 1aO J.LH

Lcoil""80mH Vee'" 10V

Rcoil = 0.7

Rcoil

n

=

VCC ~

0.05
20 V

V clamp

n

= 250 V

RS adjusted to attain IS1
Pulse Width"" 10 I-LS

OUTPUT WAVEFORMS

INOUCTIVE TEST CIRCUIT

RESISTIVE TEST CIRCUIT

,
I

....
....

Lcoil(ICM)

I

o

tl~~

I

a:
W

Ie

I Rcoll

:;
III

Obtain

I

~

U

t 1 AdJuued to

: Leoil
I

See above
for Detailed

Lcoll(lCM)

','---

_J

Vclamp

Conditions

Test Equ,pme'H

Scope - Tek tron,x
475 or Equivalent

FIGURE 7 -INDUCTIVE SWITCHING MEASUREMENTS

FIGURE 8 - INDUCTIVE SWITCHING TIMES

, - - - -.

..",- .........

/
Ija' -

- / -IB1V~~~

10

...... 1'--..

-=-~ ...;;;;-,;,.".

90%

VCE

---r-- 10%

--

~th

r--Isr--! ~ IIVIC .........

~

...........

I"--..

90%
ICM

TIME

:;;to"

V~ ttl-l

V

1\/
1/\

r:--rCM

2%

~IC~

a
w

1\

;:: 0.6
~
>
~

~ 04
0.2

'-

I\,

"\!.svl000C

"'k

~",25.C""""'"

t'-.. 1'-......

r-~
I

Vclamp
VCEM

o

2.7

tcl000~\.

0.8

.

3.0

\{

o

I

'"

.......

.......

........

---

<
~

1.8

'"'"~

1.5

r-......

..........

r--

IC' 4 A
c - - 2.4
IC/IB' 4 TJ' 25·C- c - - 2.1

r--

t--

-

1-858

g

>-

1.2

~

0.9

~

0.6

l

0.3

8
VBE{.H). BASE·EMITTER VOL TAGE (VOLTS)

~

o

....

MJE5850,MJE5851,MJE5852

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defi ned.
tsv = Voltage Storage Time, 90% IS1 to 10 % VCEM
trv = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
tti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform

is shown in Figure 7 to aid on the visual identity of
these terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during tiie crossover interval and can
be obtained using the standard equation from AN-222A:
PSWT = 112 VcClcltclf
In general, trv + tfi "" tc. However, at lower test currents
this relationship may not be valid.
As iscommon with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user orinented specifications which make this a "SWITCH MODE" transistor are
the inductive switching speeds Itc and tsv) which are
guaranteed at 100oC.

1.0

r-....

_020

3

0.7 O~

VCC" 2S0 V
Ic/la "4
TJ" 2SoC

0.30

\

......

\

0.40

1\

I,

0.10

];0.30

w

0.07
O.OS

-

VCC " 2S0 V
Ic/la" 4
VaE(olf) "S V
TJ" 2SoC

r-...
o2

01

03

O.S

0.7

20

10

3.0

01 0
0.1

S.O 70 10 0

~

1"-

Id

0.02

Is

1\

'"

;::
.: 02 0

0.0 3

0.01

SWITCHING TIMES

0

0.70
oSO

:tE
~

JURN~FF

FIGURE 10 -

FIGURE 9 - TURN-ON SWITCHING TIMES

0.3

IC. COLLECTOR CURRENT IAMPSI

II

0 S 0.7 10
20
IC. COLLECTOR CURRENT (AMPSI

40

70

FIGURE 11 - TYPICAL THERMAL RESPONSE [ZSJc(tl]

<

illc

7
0" O.S
05

~ o. 3
~ 02
in
~

:i.

ffi

:i
in

z

" ,.,.

01
00 S

-

002

- lJUl
..- ;..~

002

-r~~

V

005

01

I

j

Plpkl

I
~SliGiEiWi I
....... f-"1

001

L

~

0.02-"'

~ 00 1

>-

01

00 7 - 005

;:: 003
>-

-

02

ZoJCIII" ,III ROJC
ROJC " 1.25 eIW Max

o CURVES APPl Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT"

TJlpkl - TC "Plpkl ZOJCltJ

DUTY CYCLE, 0 '" 11/12

II III
02

05

10

2
t,

TIME {msl

1-859

I I
20

I I I I
50

I

III
100

I I
200

I

I I I II
500

1 k

10

III

MJE5850,MJE5851,MJE5852

The Safe Operating Area figures shown in Figures 12 and 13 are
specified for thesa devices under the test conditions shown.

SAFE OPERATING AREA INFORMATION

'.

FIGURE 12 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA

FORWARD BIAS
There are ~wo limitations on the power h,andllng ability

20.0

~
5

I"'

10.0

100",

'" 5.0

....

a
~

1.0
0.5

~

:: 0.2

-

8 o. I
~

"

Tc-25 0C

~ 2.0

.0 5
.02

7.0

'"

"

'"

Sm.
t

of a transistor

Im~ :--r---

operation, Ie, the transistor must not be subJected to
greater dlSSlpatl~n than the curves mdll.:ate'
.'

'<;.

The data of Figure 12 IS based on TC = 250 C. TJ(pk)
vaflab}e depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;.. 2S o C. Second breakdown limitations
do not derate the same as Ihermal limitations Allowable
current at the voltages shown on Figure 12 may be found
IS

"

1'1.
BONOING WIRE LIMIT
........
- THERMAL LIMIT (SINGLE PULSEI
SECOND BREAKDOWN LIMIT
MJE585Q
MJE5851
MJE5852

at any case temperature by uSing the tipproprlate curve on

10
70 100
200
20
40
VeE. CoLLECTOR·EMITTER VOLTAGE (VOLTS)

Figure 15.
T J(pk) may be calculated from the data

300 400 500

so
~

~
!i;:

!
-

'"

6.0

\ \\ \

4.0

~

MJE.8.o
MJE.8.1_
MJE.S.2 _

0

~

8
E

For inductive loads, high voltage and high current must
be sustained Simultaneously dunng turn-off, In most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector cur·
rent. This clm be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices IS specified as Reverse Bias
Safe Operating Area and represents the voltage·current
condition allowable during reverse biased turn·off. This
rating IS verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 13
gives the RBSOA characteristics.

1\

5.0

3.0
2.0

~ t\

\

1\

\ '\ \

1.0

200
100
300
400
VCE. COLLECTOR·EMITTER VOLTAGE (VOL TSI

500

I

FIGURE 14 PEAK REVERSE BASE CURRENT

FIGURE 15 - FORWARD BIAS POWER DERATING
I

3&

/
3.0

~
5

2.

-

=4 A
~ISI = IA
TJ = 2. oC

/'"

IC

/"
./

~ 2.0

1.
1.0

./"

./

~

f---

V

/'

/'

/"

o.S

s:- t--~

'"
t;

·0

:l:
Z

ffi
'"~

0
20

VSE(offJ. SASE·EMITTER VOLTAGE (VOLTS)

1-860

-

r- b

40

SECOND SREAKDOWN
DERATING

b

r-....

THERMAL
DERATING

o. 4

~ o. 2

o

I. . . . .

""'

o.6

to

;:::
0

.

Figure 11.

REVERSE BIAS

l\
\ \ \

~ 1\
ICIIS =4
VBE(offl =2 V to S V
TJ =1000C

In

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown

FIGURE 13 - RBSOA, MAXIMUM REVERSE BIAS
sAFE OPERATING AREA

_ 7.0

average Junction temperature and second

breakdown Safe ·operatlng area cuives indicate IC-VCE
I,m'ls of the tranSistor that must be observed for reliable

......

r-....

-

r-

"' " ,

60
SO
100
120
TC, CASE TEMPERATURE (OCI

"

140

160

®
..

MJE8S00
MJE8S01
MOTOROLA

DesignPI's Data Sheet

2.5

NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

700 and 800 VOLTS
65 WATTS

The MJE8500 and MJE8501 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switchmode applications such as:
•

l1li

AMPERE

Designer's Data for
"Worst Case" Conditions
The DeSigners Data Sheet permIts the deSIgn of most cirCUits
entorely from the information pre·
sented. Limit data - representing
deVice characterIStics boundaries are given to facilitate "worst case"
deSign.

Switching Regulators

• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Ci rcuits
Fast Turn-Off Times
300 ns Inductive Fall Time - 250 C (Typ)
500 ns Inductive Crossover Time - 25 0 C (Typ)
900 ns Inductive Storage Time - 250 C (Typ)
Operating Temperature Range -65 to +1250 C
1000 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

MJE8500

MJE8501

Unit

Collector-Emitter Voltage

VCEOlsus)

"700

800

Vdc

Collector-Emitter Voltage

VCEvi

1200

1400

Vdc

Emitter Base Voltage

VES

8.0

8.0

Vdc

Collector Current - Continuous

IC
ICM

2.5
5.0

2.5
5.0

Adc

IS
ISM

2.0
4.0

Adc

PD

65
17
0.65

2.0
4.0
65
17
0.65

Symbol

Peak 11)
Base Current - Continuous

Peak 11)
Total Power Dissipation @ T C

= 2SoC

@TC = 100°C

Derate above 25°C
Operating and Storage Junction

TJ, Tstg

-65 to +125

Watts

DIM
A
B

WloC
°c

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case
MaXimum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds

11) Pulse Test: Pulse W,dth

= 5 ms,

Symbol

Max

Unit

ROJC

1.54

TL

275

°CfW
DC

Duty Cycle" 10%.

N

n
R

4 6
064
361
241
279
036
1270
114
483
254
2.04
1.14
5.97
0.00
1.14
2.03

INCHES
MIN MAX
0575 0620
0380 0405
0160 0190
0025 0035
0142 0147
0095 0105
0110 0155
0014 0022
0500 0562
0045 0055
0190 0210
0100 0120
0.080 0.11 0
0.045 0.055
0235 0.255
0.000 0050
0.045
0.080

CASE 221 A-02

1-861

STYLE 1

PIN I BASE
2 COllECTOR
3 EMITTER

TO-220

.. COLLECTOR

MJE8500, MJE8501

III

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Table 1)
(lC = 100 mA, IB =0)

MJE8500
MJE8501

VCEO(susl

Collector Cutoff Current

-

-

-

-

0.25
5.0

-

Collector Cutoff Current

n, TC

Vde
mAde

ICEV

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE.(olf) = 1.5 Vde, TC = 100°C)
(VCE = Rated VCEV, RBE = 50

700
800

ICER

5.0

mAde

lEBO

1.0

mAde

= lOOoC)

Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
SECONO BREAKOOWN

Second Breakdown Collector Current with base forward biased

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

See Figure 13

ON CHARACTERISTICS (1)
DC Current Gain
(lC = 0.5 Adc, V CE = 5.0 Vdc)

hFE

COllector-Emitter Saturation Voltage

7.5

-

-

VCE(sat)

(lC = 1.0 Ade, IB = 0.33 Adc)
(lC = 2.5 Adc, 18 = 1.0 Adc)
(lC = 1.0 Adc, IB = 0.33 Ade, TC = 100°C)

Base-Emitter Saturation Voltage

-

-

-

-

-

-

-

-

-

1.5
1.5

-

0.045

0.20

0.2

2.0

~s

1.0

4.0

!,S

0.5

2.0

~s

2.0
5.0
3.0
Vdc

VBE(sat)

(lC = 1.0 Adc, 18 = 0.33 Adc)
(lC = 1.0 Adc, IB a 0.33 Adc, TC = 100°C)

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB

= 10 Vdc,

=0, 'test = 1.0 kHz)

IE

SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time

<

(VCC = 500 Vdc, IC = 1.0 A,
ISl = 0.33 A)VBE(offl = 5.0 Vdc, Ip
Duty Cycle" 2.0%)

Rise Time

Storage Time

'd

'r
Is

= 50!,s,

,Fall Time

tf

~s

Inductive Load, Clamped (Table 1)

= 1.0 A(pkl.

Storage Time

(lC

Crossover Time
Storage Time

VBE(off) = 5 Vdc, TC

Crossover Time
Fall Time

(lC

= 500 Vdc,
= 100°C)

Vclamp

= 1.0 A(pk), Vclamp = 500
= 5 Vdc, TC = 25°C)

181

Vdc, ISl

= 0.33 A,
= 0.33

A,

VSE(off)

(1) Pulse Test: PW . 300 !,S, Duty Cycle" 2%.

1-862

1.3

4.0

~s

tc

-

0,6

2.0

tsv

0.9

-

te

-

"s
!,S

0.5

-

tfi

-

0.3

tsv

~s

!,S

MJE8500, MJE8501

z

U TJ~

-

...-i-

;;:

Ci3' 2.2

100°C

TA ~ 25°C

'" 10

VeE

~

~
o

5V

a
:5

;

IC -

~
w

~

1.8

'"
~
o

I-

~_

~ 1.4

7.0
5. 0

~a:

r-...

1.0

.~

\

~

2.0

3.0

2.0

2.S

\

\

\

\
~

\

\.

0.2
0.15

\

\

\

0.6

>

0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMPSI

\

o

\

I.SA

ry r\

\

g§

\

3.0

~1.DA

~

'\!'\

2.0 I
0.03

IIJI

FIGURE 2 - COLLECTOR SATURATION REGION

FIGURE 1 - DC CURRENT GAIN
20

0.2

\

r--....

\

1\
!'..

......

r--.

r-..

0.7
0.4
0.3
lB. BASE CURRENT (AMPS)

1.0

---

I.S

/

FIGURE 4 - BASE-EMITTER VOLTAGE

FIGURE 3 - COLLECTOR·EMITTER SATURATION VOLTAGE

~

2.0

~

1.6

-

I.S

~
-J

~

~
g

'"w

0

~
w

1.2

VCE(satl

@

'"
~
0

Ic/la ~ 3

>

1=

!,;,

0.8

-

TJ ~ 100°C

o

~ 0.4
=

/

~
>

0
0.25 0.30

~

2.0

Tr 2SOC

W

/

1.5
0.4
0.5 0.6 0.7 0.80.91.0
ICE. COLLECTOR CURRENT (AMPSI

i..--

I-

1

~

~

~-

8

1.0

'"~

/

VBE(sat) @ Ic/la ~ 3

O.S
0.2S 0.3

2.5

~ I-

10ll"C

:i:
>

0.4
O.S 0.6 0.7 0.80.91.0
IC. COLLECTOR CURRENT (AMPS)

10000

" " ,

3

-

-TJ'~1500C

125°C

.....

..;

I

I

2.S

2SDC

3000
Cj::~100 0

.:>

~ 500

::i

I

I-

300

U

7SDC

I--- t--REVERSE

TJ

sooo

I

" "

100DC

2.0

FIGURE 6 - CAPACITANCE

FIGURE 5 - COLLECTOR CUTOFF REGION

104

1.S

FORWARD

§ 100
'VCE~2S0V=

Cob

U

0

2SoC

10- I
-0.4

-0.2

+0.2

+0.4

+0.6

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-863

0
10.1

0.20.3

0.71.0 2.03.0
7.010 2030
10100 200
VR. REVERSE VOLTAGE (VOLTS)

500 1000

MJE8500. MJE8501

-

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC'::--

. / VI

./

i"\

90% VCE(pkl

~

A1\ 90% IC

l",fI~lll- 1- ',,-

I- f---Isv

IC/

VCE(pkl

"-

I--. '-Ic-\ r-

/
VCE

10% VCE(pkl

1"-

10% ......
ICPk

I B - t- 9O%IBl

r;.~

-- --\-, -- --- -- -- -

"""' -

~

TIME

FIGURE 8 - PEAK REVERSE BASE CURRENT
1. ~

.1
,I,
I--IC " 1.0 A
IBI " 0.33 A
0

.~

. , /V

.01/

...- 1---1"'""

~

~

.~

0

1.0
4.0
6.0
VBE (Offl, BASE EMITTER VOLTAGE (VOLTSI

8.0

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% VCE (pkl
trv = Voltage Rise Time, 10-90% VCE (pkl
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, iO% VCE (pkl to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT = 1/2 V CCIc(tclf
In general, trv + tfi "" tc' However, at lower test currents
this relationship may not be valid .
As is common with most switching transistors, resistive
switching is specified at 250 C and has become a benchmark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsvl which are
guaranteed at 1000 C.

TYPICAL RESISTIVE SWITCHING PERFORMANCE
FIGURE 9 - TURN· ON SWITCHING TIMES
0.600
0.500
0.300
~.o.lo 0

1.0

""'"

.."'

VCC" 500V
IC/IB1" 3
TJ " 15°C

1

...........

r---..

....... ~

;::

.0

FIGURE 10 - TURN - OFF SWITCHING TIMES

I,

V

1.0

/

~

0.01 0
0.050

0.1

0.3

r---

;--'f
0.300

Id

0.1~

0.500

;::

0.10 0

0.030

_I,

~o.lOo

o.~

-

0.7
1.0
IC. COLLECTOR CURRENT (AMPSI

Vee" 500V
lellB1" 3
TJ " 15°C

0.100
VSE(offl" 5.0 v
1.0

3.0

1-864

0.100
0.15

0.1

I J JJ1

0.3
0.5
0.1
1.0
IC, COLLECTOR CURRENT (AMPSI

1.0

3.0

MJE8500, MJE8501

III

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE SWITCHING

RBSDA AND INDUCTIVE SWITCHING

VCEO(susl

r-.-----------~--~------_.--_O+15

47

n

R'

TURN ON TIME
+10V>~Ol

20


::;

7.0

1.6

~

ag 5.0

~
'"'"

"

\..

~

8

03

0,

0)

~

1

\.

r--....

2

0)

0.5

06

"-

-

1

~

I---

I-"'"

-,.-

6

04

--t;;;'OC

--

TJ0 1000C / /

~
25 0CI"",:::: -....,-

VCE(sat)@le /l a=25

7

I
01

02

05 0)
03
lC' COLLECTOR CURRENT lAMP!

01

TJ'IS0o e
10 2

12s oe

'"'"

f

r-REVERSE

""

./

10000
7000

/

/

'VCE

'2'0~

~

500

~t3

200

§

100

..;

0

2s·e

TJ - 250e'~

Cob

0

to- 1
-0.2

0)

Cib

~ 1000

FORWARD

100

·0.4

05

2000

./

7soe
~

03

FIGURE 6 - CAPACITANCE

100 0e

1

02

Ic. COLLECTOR CURRENT lAMP!

,

/

103

10

\.

J.....-"': "..
VBE(s.HI @lle/la '" 2.5

08

/

:3
~

\.

T}'250~-;;;;:

FIGURE 5 - COLLECTOR CUTOFF REGION

~

\

1

104

~

,

FIGURE 4 - BASE·EMITTER VOLTAGE

11

005

~

\

lB. BASE eu RRENT lAMP)

14

"

....

\
1\

0.3

14

01

~
.3

4.5 A

0

FIGURE 3 - COLLECTOR ·EMITTER SATURATION REGION

'">>'

3.SA\4 A

\

Ie, COllECTOR CURRENT (AMP)

~
'"2:
w
'"

~3A
\

04

il

02

~

-

1.2

>

20
00, 00) 0 1

~:le'2A

~. 0.8

\

3.0

-

1\
1\

+0.2

+0.4

0
1 0.1

+0.6

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-869

0.3

0.71.0

30
7.010 30
70 100
VR. REVERSE VOLTAGE IVOLTS!

300 700 tOOO

MJE8502, MJE8503

III

SWITCHING TIMES NOTE

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

IC~

--

~

I

./
r--- i---'sv

IC ........

VCE(pk)

.......

"l

90% VCE(pk)

!\ 90% IC

Irv+l~lft- 1- ',,-

--J f- Ic-4

/
10% VCE(pk)

VCE
1 S - t- 90% lSI

-- --\- --

e---

-- --

--

"'-"

-

"

10%"" l- I2%IC
'C pk

----

~

TIME

In reslst,ve switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% VCE(pk)
trv = Voltage Rise Time, 10-90% VCE(pk)
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% VCE(pk) to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.

For the designer, there is minimal switching loss
during storage time and the predominant switching

FIGURE 8 - PEAK REVERSE BASE CURRENT
5. 0

0

",...
0

--

./

i--'"

J......-

-~

power losses occur during the crossover interval and

r--

can be obtained using the standard equation from AN·222:

IC" 2.5A
lSI "LOA

/

1. 0
0

2.0
4.0
6.0
VSE(olf) .. BASE EMITTER VOLTAGE (VOLTS)

B.O

PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi '" tc' However, at lower test currents
this relationship may not be valid .
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifica·
tions which make this a "SWITCH MODE" transistor are
the inductive switching speeds (tc and tsv) which are
guaranteed at 1000 C.

TYPICAL RESISTIVE SWITCHING PERFORMANCE

FIGURE 10 - TURN-OFF SWITCHING TIMES

FIGURE 9 - TURN·ON SWITCHING TiMES
1. 0
0.700

2000

0.500
0.300

""

0.200

.;;
~ 0.100

~.

......

"

t......

"" t--Id

+-.

1,7
L/

.

~ 0.600

>=

0.40

°v

0.03f- VCC = 500 v
0.02f- IclISl "2.5

0.3

V

./
If

0.200
0.1

5.0

'-870

r-- t-.

VCC = 500
IC/IB" 2.5
VSE(off) " 5.0 V
TJ" 25°C

0.300

0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS)

f.-

-- O.DO0

0.0 7
0.05

f- Ty 25,c
0.0 1 0.1
0.2

.>V l.-

1.000

0.2

0.3 0.4
0.7 1.0
IC, COLLECTOR CURRENT (AMPS)

5.0

MJE8502, MJE8503

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RBSOA AND INDUCTIVE SWITCHING

VCEO(sus)

RESISTIVE SWITCHING

r-,-----------~--~------_.--~+15

47n

Rl

TURN ON TIME
+10V"'~Ol

20

en
Z

oJL

~o

::l-

... !:

ISl "dIU$ted 10

-z

hFE da,"ed

ZQ

8

obi.," the foreed
TURN OFF TIME
PW Vaned to Attain
Ie = 100 mA

USIII .ndu<;e.ve 5w,tc:t"na
driver a. the ,"put to
the r.Sl&1I118 te$1 CirCUit

All Diodes - 1N4934
All NPN - MJE200
All PNP - MJE210

I.

Adjust R 1 to obtain I B 1
For SWitching and RBSO A • R2 '" 0
For BVCEO(sus). R2 '"

250 "F

-

~djUst
obtain

VSE(offl

~

5.0 V

QQ

VCC=500V
Leoll =- 80 mH
ReOl1 '" 0 7

Vee

LeOd

= 10 V

~

180

~H

Vclamp

Aeoll ~ OOSH
Vee: 20 V

n

INDUCTIVE TEST CIRCUIT

= 500

V

RL=200n

Pulse Width = 10 JJs
RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

MRS16

'e

11 Adjusted to

It?1 "~'.m"d

Obtain

' ..U ] .

",

i '"..~

Vcl amp

~rnp

1'"

~

Test EqUipment
Scope - TektronIx
475 Of Equlve.ent

I-Il~

Time

,

12 "" LCOdllCPk I

veet vc-r::- .

"'

~

Vee

'tt-

1--"

Ie

I, "" LC01111Cpk I

FIGURE 11 - THERMAL RESPONSE

~
3

~
II<

o

~

Z

:!

1.0
O. 7
D' 0.5
O. 5

O. J
0.2

0.2

~II<

O. 1
~ 0.07f-- 0.05
ffi 0.05
r - 002
:z:

.... 0.0J

~

0.02

~
....

0.01 /
0.01
002

~

....

;;;.- -

0.1

i-'" fo.ot:::::

......

-

:;;0-

-

tJUl

....

12~~

ZeJC(tl • rlt) R9JC
R9JC >1.2S"C/W Max
D CURVES APPLY FOR POWER
PULSETRAIN SHOWN
READ TIME AT 11
TJlpk) - TC' Plpk) Z8JCII)

DUTY CYCLE, O' .,/12

SliGnnt
DOS

P(pk)

01

11111
02

10

05
t, TIME (msJ

1-871

I

I
20

I I 111111
SO

100

I

I
200

I

I II II
500

1.0k

MJE8502, MJE8503

SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation: i.e .. the transistor must not be subjected to
greater dissipation than the curves indicate.

FIGURE 12 - FORWARD BIAS SAFE OPERATING AREA

~

~

5 1.0
a

1m.

0:
0:
0:

:=
;

0.1
BONOING WIRE LIMIT
T.HERMAL LIMIT
SECONO BREAKOOWN LIMIT

E:'':'

8

MJES502

.=l0.01

MJES503'f=:
10

20

50
100
200
500
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

1000

FIGURE 13 - RBSOA, REVERSE BIAS SWITCHING
SAFE OPE,RATING AREA

REVERSE BIAS

l\

\

VSE(olfl" 2 to 7 V

1\
\

TJ .. 100°C
I- IC/IB;> 2.5

1\

2

I

\

1"-

rJES50~

FciR
RBSOA
liMIT IS 200 VOLTS LESS
0

~

~

The data of Figure 12 is b~sed on TC = 250 C: TJ(pkl
is va"able depending on power )evel. Second breakdown
pulse "mlts are valid lor duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by usmg the appropriate curve on
Figure 14,
TJ(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

~

~

I'-

1~

-l"- I---

=

1400

VCE, COLLECTOR,EMITTER VOLTAGE (VOLTS)

For inductive loads, high voltage and high current must
be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to
a safe level at or below a specific value of collector current. This can be accomplished by several means such as
active clamping, RC snubbing, load line shaping, etc. The
safe level for these devices is specified as Reverse Bias
Safe Operating Area and represents the voltage-current
condition allowable during reverse biased turn·off. This
rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode, Figure 13
gives the complete RBSOA characteristics.

FIGURE 14 - POWER DERATING
100

~

;:-t-.

so

r- r--

0:
C

1 1

1

. / ~cond Breakdown Derating
-

-r-

t;

:1:

60

/

;;;"'

Thermal

c

Derating

z

~ 40

0:

~

~ 20

l">..
o
o

20

50
70
100
TC, CASE TEMPERATURE (oC)

1-872

120

140

®

IJE12007
MOTOROLA

III
2.5 AMPERE

HORIZONTAL DEFLECTION TRANSISTOR
NPN SILICON
POWER TRANSISTOR

· .. specifically designed for use in small screen black and white
deflection circuits.

1500 VOLTS
65 WATTS

• Coliector·Emitter Voltage - VCEX = 1500 Volts
• Glassivated Base·Coliector Junction
• Switching Times with Inductive Loads tf = 0.65 /1S (Typ) @ IC = 2.0 A

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEOlsusl

Vdc

Collector-Emitter Voltage
Emitter-Base Voltage

VCEX

750
1500

VEBO

5.0

Vdc

Collector Current - Continuous

IC

2.5

Adc

Base Current - Continuous

IB

2.0

Adc

Emitter Current - Continuous

IE

4.5

Adc

Po

65
0.65

Watts
WIDC

Rating

Total Power Dissipation
Derate above 2SoC

@

TC = 2SoC

Operating and Storage Junction Temperature Range

TJ. Tst9

-65

to

Vdc

DC

+125

THERMAL CHARACTERISTICS

I
I

Characteristic
Thermal Resistance, Junction to Case

Symbol
ROJC

I
I

Max

1.54

FIGURE 1 - TEST CIRCUIT

Unit

°C/W

,-1]
A

C

'

tu

,I

II

-W-r:

1";13

j

H

L

2. COUECTOR
3 EMITTER
4 COLLECTOR

50kCo_
C.pac:'~Dr

val" ...

In

"F

, ....ton., .. 110 w.tt

r-

~
A

0.11100 V

B
C

0
F
G

H

J
K
L
N
Q

R

S
T
U

V
Z

DRIVER TRANSFORMER ITll
Motorola part "umba. 25D68782A-05-1I4" I..... n_ "e" 'ron
co", P.lm.,y Induo;1anca- 39 mHo SlIConda'r InductMoca- 22 mtl,
L"'qe 'ndlJeUllA ...Ith prlm.ry Iho~ - 2.0 Il .... Prlm.rv 260
.uml #28 AWG .........1 wi ... SOKOftd.ry 17 tu ..... #22 AWG

~

~r-

9
4
0
3
2
279
036
1270
114
483
2.54
2.04
1.14
5.97
0.00
1.14

-

482
089
373
267
393
056
1417
139
533
304
2.79
1.39
6.48
1.27

-

2.03

~
~
0147
0095
0110
0014
0500
0045
0190
0100
0080
0.045
0.235
0.000
0.045

-

CASE 221A·02
T().220AB

.n.m_ . .,..

1-873

Ii
~
~

10.29

V

::J

r

i -x~". 'j~N'

STYLE 1
PIN 1 BASE

"'>0
sow
5wt8Adj

J
I

=11-5

0105
0155
0021
0.561
0055
0.110
0.120
0.110
0.055
0.255
0.050

-

O.OBO

MJE12007

,

,.

!

I

ELECTRICAL CHARACTERISTICS ITC • 2S o C unle.. otherwise noted)
Char__
Symbol
OFF CHARACTERISTICS (1)
CoIlactor~Emitter S,:,staining Voltage
VCEO(sus)
IIC = 50 mAde. IB •.0)
Collector Cutoll Current
ICES
(VCE a 1500 Vde. VBE = 0)

I

I

Min

Typ

Mox

Unit

750

-

-

Vde

-

-

1.0

mAde

lEBO

-

-

0.1

mAde

VCElsad

-

-

5.0

Vde

VBElsad

-

-

1.5

Vde

DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde. IE • O. I = 0.1 MHz)

Cob

-

50

-

pF

Current Gain - 'Bandwidth Product (1)
(lC = 0.1 Ade. VCE = 5.0 Vdc. I test • 1.0 MHz)

IT

-

4.0

-

MH.

Emitter Cutoff Current
(V BE = 5.0 Vde. IC • 0)

ON CHARACTERISTICS (1)
Coliector·Emitter Saturation Voltage
'1C = 2.0 Ade. IB - 1.B Ado)
Base-Emitter Saturation Voltage
IIC = 2.0 Ade. IB =·l.B Adc)

SWITCHING CHARACTERISTICS
Fall Time
(lC' 2.0 Adc. IBI = 1.0 Adc. LB

=

12 I'H)

11) Pulse Test: Pulse Width .. 3001's. Duty Cycle

=

2%.

FIGURE 2 - DC CURRENT GAIN
30
TJ1=

20

z

<
'"

~
a
u

c

~

FIGURE 3 - "ON" VOLTAGE

I~OJC

_.25 OC

10

2.0

VC~=5~OV
~

-

16
0;-

f"o.~

'::;
c

~

'"
~
'">

"-

5.0

"'

~
3.0
2.0
15
0.03

1.2

w

70

0.05

VSE( ..t!@IC/IS = 2 0

0.1
0.2
0.5
1.0
IC. COLLECTOR CURRENT (AMP)

looOe

0.4

2.0

VCE(sat!@ Iclls = 2.0

o

3.0

025 0.3

0.4

0.5
07
IC. COLLECTOR

FIGURE 4 - SAFE OPERATING AREA
10

~
ffi~
a

5. a
2. 5 -

--

.....
1.0ms

1.0

o. 5

'"'"

~ d. 2 _ f-TJ= 25°C
B o. I
Bonding Wire Limited
E 0.05
0.02
0.0 1
10

----

:.-- i===- f

>'

i'0

"

de

""-

Thermally Limited@Tc - 250 C
(Single Pulse)

Second Breakdown limited

20
100
500
50
200
VCE. COLLECTOR,EMITTER VOLTAGE (VOLTS)

1-874

750 1 k

.L

TJ =251'C

O.S

1.0

----

CU~RENT

(AMP!

100°C

./ /
,.../
25°C

-

2.0

2.5

®

MJE13002
MJE13003

MOTOROLA

De!'-ii~·ne .. !'-i

Data Sheet

1.5 AMPERE

NPN SILICON
POWER TRANSISTORS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

300 and 400 VOL TS
40 WATTS

These devices are designed for high·voltage, high-speed power switch·
ing inductive circuits where fall time is critical. They are particularly
suited for 115 and 220 V SWITCH MODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
SPECIFICATION FEATURES:
• Reverse Biased SOAwith Inductive Loads@Tc= lOOoC
• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and lOOoC
... tc @ 1 A, lOOoC is 290 ns (TYPI.
• 700 V Blocking Capability
• SOA and Switching Applications Information.
CASE 77·04
rO-126

MAXIMUM RATINGS
Rilling
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter ease Voltage
Collector Current - Continuous

- Peak (11
Base Current

Continuous

-Peak (11
Emitter Current

Continuous

-Peak (11
Total Powar Dissipation@TA=25 C

Symbol
VCEO(susl
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
Po

Darate above 2SoC

Total Powar Dissipation@TC= 25°C
Derate abo... 25°C
Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS
Chancteristi.
Thermal Resistance, Junction to Case
Thermal Resistance. Junction to
Ambient
Maximum Lead Temperature for

MJEl3003
400
700

MJE13OO2
300

Po
TJ,Tstg

600
9

1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
-66 to +150

Unit

Vdc
Vdc
Vdo
Ado
Ad.
Ado
Watts
mW/oC

Watts
mW/oC

°c

Symbol
ROJC
ROJA

3.12

89

Unit
°C/W
Oe/W

TL

275

°c

MIX

Soldering Purposes: 1/8" from C...
for 5 Seconds

s

1---0

GJJ
E9;:::-j-f
M~

t

STYLE 3
PIN 1. BASE
2. COLLECTOR
3. EMITTER

DIM

(11 Pulse Test: PulaeWidth = 5m" Dutv Cycle" 10%.
Designer's Data for "Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits entirely
from the information presented. Limit datA - representing device
characteristics boundaries - are given to faCilitate "worst case"
design.

1-875

MILLIMETERS
MIN MAX

A

lo.BO

11.05

B
C
D
F
G
H
J
K

749
241
0.51
2.92
2.31
1.27
038
1511

175095
2.67 0095
0.660,020
.180.11
246 0.091
2.41 0.0
0.640015
16.64 0.595

M

n

R
S
U
\I

30 TYP

376
1.14
064
3.68
102

42

3

4.01 0148
1.40 0.045
0890.025
394 0.145
0.04

MJE13002,MJE13003

lIB
ELECTRICAL CHARAC'rERISTICS (TC = 2SoC unl... otherwl.. noted"
Symbol

Min

Typ

MIX

300

-

400

-

-

-

-

-

1
5

-

-

1

Unit

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
(lC = 10 mA,lB =0)

VCEO(sus)
MJEl3002
. MJEl3003

Collector Cutoff Current
(VCEV = Rated Value, VBE(off} = 1.5 Vde}
(VCEV Rated Value, VBE(off} = 1.5 Vde, TC = 100°C}

ICEV

Emitter Cutoff Current
(VEB = 9 Vdc, IC = O)

lEBO

-

Q

Vdc

mAde

mAde

SECOND BREAKDOWN
Second Breakdown Collector Current with b... forward biased

See Figure 11

Clamped Inductive SOA with base reve ... biased

See Figure 12

ON CHARACTERISTICS (1)
DC Current Gain
(lC = 0.5 Ade, VCE = 2 Vdc)
IIc = 1 Ade, VCE = 2 Vde}

hFE

8
6

Collector-Emitter Saturation Voltage
(lC = 0.6 Ade, IB = 0.1 Ade)
(lC = 1 Ade, IB = 0.25 Adc)
(lC = 1.5 Ade, IB = 0.5 Ade)
(lC = 1 Adc,IB = 0.25 Adc, TC = 100oC)

VCE(satl

Base-Emitter Saturation Voltage
(lc = 0.6 Adc, IB = 0,1 Ade)
IIc = 1 Ade, IB = 0.26 Ade}
(lc = 1 Ade, IB = 0.25 Ade, TC = 100°C)

VBE(satl

-

-

-

40
26

-

0.6
1
3
1

-

-

Vde

-

-

-

-

-

-

1
1.2
1.1

fT

4

10

-

MHz

Cob

-

21

-

pF

-

0.06

. 0.1

/J.

-

0.5

1

/J'

2

4

IJS

0.4

0.7

/J'

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product
(lC = 100 mAde, VCE = 10 Vde, f = 1 MHz)
Output Capacitance

(VCB

=10 Vde, IE =0, f = 0.1 MHz)

SWITCHING CHARACTERISTICS
Resistive Load ITable 1}
Delay Time

(VCC = 125 Vde,. IC = 1 A,

Id

Rise Time

IBl = IB2 =0.2 A,tp - 25 /J',

tr

Storage Time

Dutv Cvele .. 1 %)

t.

Fall Time

tf

Inductive Load, Clamped (Table 1, Figure 13)

Storage Time

IIC = 1 A, Vclamp = 300 Vde,

Crossover Time

IBl = 0.2 A, VBE(off}

=

5 Vdc, TC

-

1.7

4

IJS

te

0.29

0.75

Its

tfi

-

0.15

-

/JS

t s•
=

l000C)

Fall Tima
(1) Pulse Test: PW = 300 /J., Duty Cvele <; 2%.

1-876

MJE13002.MJE13003

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

80

~

60

";;:

'"
....
~

0:
0:

40

2~ 1"- ....

30

I

20

-SSoC

'"

~

10
8

r--

g

-

I

4

0.02 0.03

IIIII

~_ o.4
8

,

~
c
2:
w

c:>~ O.8

2SoC

,;

O.6

-- -

~

IO.4
0.02 0.03

0.01

0.02

O.OS

I=:-0.2-

0.1

O.S

FIGURE 4 - COLLECTOR·EMITTER SATURATION REGION

0.30

--VBElon)@VCE' 2 V

I I

O.OOS

0.3S

I I

TJ--SSoC _

0
0.002

I

lB. BASE CURRENT lAMP)

JBEI~t) @I~IIB I. 3 1

1

\

w

>'"

I

1.SA

1\ \
\ \
\

\

'"

FIGURE 3 - BASE-EMITTER VOLTAGE

1. 2

lA-

IC'O.lA- 0.3 A O.S A

0:

0.2 0.3
O.S 0.7
O.OS 0.07 0.1
IC. COLLECTOR CURRENT lAMP)

1.4

1.21-

~ O. B

~

VCE - 2 V
VCE - S V

r--

1.6

'"~
'"
;;

,

~

I

G

'"

+~ ~12S0C

'"2:w

TJ 'lS0~C

~O.25

V

,.....1-

I

«
'"

V

I--f-

IcllS =3

'"~O.20

V

~-t--~,S0i- I--"

Lll

r-- -

~O.15

TJ' -SSoc

'">

-

>'0.10

lS00C

O.OS

I I

a

O.OS 0.07 0.1
0.2 0.3
O.S 0.7
IC. COLLECTOR CURRENT lAMP)

/
II
1/

0.02 0.03

,.

25°C
~ f-:
--:::~ 150 0 C

I

O.OS 0.07 0.1
0.2 0.3
O.S 0.7
IC. COLLECTOR CURRENT lAMP)

FIGURE 5 - COLLECTOR CUTOFF REGION

FIGURE 6 - CAPACITANCE
SOa

104
r=VCf' 2S0 jV

I

/

I

300

I

r--Tr lS00C

-

12SOC

I--- r-l00oC
I--- 1--7SoC
1

I
./

0

J_

I

0
0

I

./
I

I

0

I - - r--SOOC

0

I:==" i==2S0C

0
7
S
0.1

FORWARO
10- l r - = FREVERSE
-0.2
<11.4
<11.2
-0.4
V8E. BASE·EMITTER VOLTAGE IVOLTS)

TJ' 2S oC

~

200

<11.6

......

0.2

O.S

10

,

20

Cob

SO 100

VR. REVERSE VOLTAGE IVOLTS)

1-877

200

SOO 1000

MJE13002,MJE13003

TABLE 1 - TEST CONDITIONS FDR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

IN4933

R

33 IN4933

0.001 jJF

5V

+125 V

Duty Cycle .. 10%
1r • tf <; 10 "I

TUT
-4.0 V

51

NOTE
PW end V CC AdJusted for Doalrod IC
Ra AdJusted for D ••lred lal

Coli

-vaEloff)

oao:

VCC

GAP for 30 mH/2A

Ferroxcube Cor. #6656
Full Bobbin ( .... 200 Turn,) #20

z

20V

Vcl amp '"' 300 Vdc

Leoll"" 50 mH

OUTPUT WAVEFORMS

1f Clamped
IC

t1 Adjusted to
Obtain Ie
Test Equipment

I, '"
VCE

Leo" (lCpk)

Scope-T ektron ie.

VCC

475 or Equivalent

VCC-'25 V
RC z 125Sl.
01 "" 1 N5820 or Equiv.
Ra - 47 Sl.

' ':9;-

Leoit (lCpk)
t2

t r.tt<10ns
Duty Cycle"" 1.0%

~ Vclamp

A Band RC adj ulted
for de.ired I B and Ie

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
IC~

. /V

90% VcJamp

./
IC""""

I

Vcl,mp_

I"

f-- t--Isv

t---

IC
AMP

TC

t..,

°c

...

tr.

...

...ttl

ttl

...

...'c

0.5

25
100

1.3
1.6

0.23
0.26

0.30
0.30

0.35
0.40

0.30
0.36

1

25
100

1.5
1.7

0.10
0.13

0.14
0.26

0.05
0.06

0.16
0.29

1.5

25
'DO

1.8
3

0.07
0.08

0.10
0.22

0.05
0.08

0.16
0.28

90%IC

Irvlf ~Ifi- I-',iI-l f-'c~

V

c

11l%V lamp

VCE
1 8 - i - 90%181

"'I.

TABLE 2 - TYPICAL INDUCTIVE SWITCHING PERFORMANCE

-"-

10% ......
ICPK-

-+IC

NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1

2%

-- --\-,--- -- -- - -

-

~

"--'"

TIME

1-878

MJE13002,MJE13003

SWITCHING TIMES NOTE
is shown in Figure 1 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN·222:
PSWT = 112 VCCIC(tclf
In general, trv + tfi = tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switchi ng is specified at 250 C and has become a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifica·
tions which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsvl which are
guaranteed at 1000 C.

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defi ned.
tsv = Voltage Storage Time, 90% lSI to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vcl amp
tfi = Current Fall Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vcl amp to 10% IC
An enlarged portion of the inductive switching waveforms

RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN-ON TIME

FIGURE 9 - TURN-OFF TIME

2

10
VCC=12&V
IC/IB= &
TJ-2&OC

I

O. 7ii::: tr
0.&

j
;::

=

........
-..;;::

~ 0.2

-' o.

r--;

~

0.3

V~C-I25V=

ICir~&oc

I,

'd @ VBE(off) = &
I

.....

,

0.7
0.&

0.07
0.0&

......

0.3

tf

0.2

0.03
0.02
0.02 0.03

0.0& 0.07

0.1

0.2

0.3

0.& 0.7

10

20

0.1
0.02

0.D3

0.1

0.05 0.07 0.1

0.3

0.&

0.7

IC. COLLECTOR CURRENT (AMPI

IC, COLLECTOR CURRENT (AMPI

FIGURE 10 - THERMAL RESPONSE

1==0 = 0.&
~ ~0.2
t--- r
11==

0.05

1==

0.02

...-:::
t---

....-

O.1

-'I
0.01

-

t:::"

ZOJChl - rhl ROJC
ROJC = 3.12 oCIW Max

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

I-::: ~

TJ(pkl-TC = P(pkl ROJC(t1

f0lJl
t:~-J

f-Single Pulse

DUTY CYCLE. 0 = q/t2

0.0 1

am

111111

1

1
0.02 0.03

0.05

0.1

0.2

0.3

0.&

10
t, TIME OR PULSE WIDTH

1-879

(m,1

20

&0

100

200

&00

1000

MJE13002,MJE13003

The Sa.. Operating Area figuNS shawn in FiguNS 11 and 12 ara
specified ratings for th_ devices under the _ conditions shawn.

SAFE OPERATING AREA INFORMATION
FIGURE 11 - FORWARD BIAS SAFE OPERATION AREA
10

....

5

Ii:

S

2

a:i

I

'"
i:l

'"

0.5

'"0

0.2

~

....,

......

-- - 1--

~=

5.Dms

TC =2SoC

____ ~~~~~N'GL~I~mt~~I'~ d~
- - - SECOND BREAKDOWN LIMIT I
CURVES APPLY BELOW RATED VCEO

0.1

lO"s
100",
1.0m.==:

r- .....

...... '"

"

r--.. "-

0

~ 0.05
0.12
0.01
5

=m~8Il~~ ~
lQ

7

20

30

50

70

100

200

500

300

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 12 - REVERSE BIAS SAFE OPERATING AREA

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating 'area curves indicate IC-VCE
limits. of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;., 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found
at any case temperature by using the appropriate curve
on Figure 13.
TJ(pk) may be calculated from the data in Figure 10.
At high case temperatures, thermal limitations will reduce
.the power that can be handled to values less than the
limitations imposed by second breakdown.

1.6

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn·off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load line
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and represents the
voltage·current conditions during reverse biased turn·off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure
12 gives R BSOA characteristics.

Ii:

~ 1.2

...
~

0:

B 0.8
0:

0

~
8 0.4

I-- TC ';;IOOoC

~
0
0

IBI

=1 A

l\
\"\
\\

V8E(off) = 9 V

r----

MJEI3002_

~ ~MJEI3003-: f---- sv-

~
3V
1.5 V
400
500
600
700
800
100
2 0
300
VCEV, COLLECTOR·EMITTER CLAMP VOLTAGE IVOLTS)

FIGURE 13 - FORWARD BIAS POWER DERATING
1

0.8

~

r-

r-

r--...

i'.

0:

::

........

~ 0.6

- --

THERMAL
DERATING

to

z
;::

SECOND BREAKOOWN
I-- I-DERATING

"-

~ 0.4

~

:g

......

i'.

ffi

~ 0.2

o

20

-- r.....

"40

60

80

100

TC, CASE TEMPERATURE (DC)

1-880

~

120

r--....

140

160

®

MJE13004
MJE13005

MOTOROLA

4 AMPERE

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS

ID
•

NPN SILICON
POWER TRANSISTORS

I

I

i

300 and 400 VOLTS
75 WATTS

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly
suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator's, Inverters, Motor Controls, Solenoid / Relay drivers
and Deflection circuits.

SPECIFICATION FEATURES:
•

VCEO(sus) 400 V and 300 V

•

Reverse Bias SOA with Inductive Loads @ T C = 1000 e

•

Inductive Switching Matrix 2 to 4 Amp, 25 and 1000 e
... t c @3A, 1000 C is lBO ns (Typ)

•

700 V Blocking Capability

•

Ii
II

11

:~

SOA and Switching Applications Information.

I!

MAXIMUM RATINGS
Symbol

Rating
Collector-Emitter Voltage
Collector-Emitter Voltage

Emitter Base Voltage
Collector Current - Continuous

-Peak(ll
Base Current - Continuous

-Peak (11
Emitter Current - Continuous

-Peak (1)
Total Power Dissipation@T A = 2SoC

Operating and Storage Junction

Vdc
Vdc
Vdc
Adc

9
4
8

2
4
6
12

Adc
Adc

2

Watts

mW/oC

Po

16
75
600

TJ,Tstg

-65 to +150

°c

Derate above 25°C

Total Power Dissipation@Tc-25OC
Derate above 2SoC

Unit

MJE13OO5
400
700

MJE13004
300
600

Vceo(sus)
Vcev
VEBO
IC
ICM
IB
IBM
Ie
IEM
Po

Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

Thermal Resistance. Junction to
Ambient

Symbol

Max

Unit

ROJC
ROJA

1.67
62.5

°C/W
°C/W

TL

275

°c

Maximum Lead Temperature for

MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 1460 1575 0575 0.620
B

C
0
F

G

Soldering Purposes: 1/8" from Case

H
J
K

L

for 5 Seconds

(11 Pulse Test: Pulse Width

STYLE 1:
PIN 1 BASE
2 COLLECTOR
3 EMmER
4 COLLECTOR

Watts
mW/oC

=

5 ms, Duty Cycle

<;;

N

10%.

Q

Designer's Data for "Worst Case" Conditions
The Designers Data Sheet permits the design of most circuits entirely
from the information presented. limit datA - representing device
characteristics boundaries -are given to facilitate"worst case" design.

R
S
T
U
V

Z

965
406
064
361
241
279
036
1270
114
4B3
254
204
114
5.97
0.00
1.14

1029
482
089
373
267
393
056
1427
139
533
3.04
2.79
1.39
6.48
1.27

0380
0160
0025
0142
0095
0110
0014
0500
0045
0190
DIDO
O.OBO
0045
0.235
0.000
0.045

2.03

0405
0190
0035
0147
0105
0155
0022
0562
0055
0210
0.120
0.110
0.055
0.255
0.050
0.080

CASE 221 A-02
TO-220AB
[

1-881

MJE13004, MJE13005

..

ELECTRICAL CHARACTERISTICS

(TC =250 C unless otherwise noted.)
Symbol

ChariICteristic

Min

Typ

M••

300
400

-

-

-

-

1
5

-

1

Unit

'OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage

IIc

= 10 mA, IS =0)

Collector Cutoff Current

(VCEV
(VCEV

mAde

ICE V

= Rated Value, VSE(off) = 1.5 Vdel
= Rated Value, VSE(off) = 1.5 Vde, TC = 100°C)

Emitter Cutoff Current

(VES

Vde

VCEO(sus)
MJEI3004
MJEI3005

IESO

-

mAde

=9 Vde, IC =0)

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 11

Clamped Inductive SOA with Base Reverse Biased

See Figure 12

"ON CHARACTERISTICS

DC Cu rrent Gai n
(lc = 1 Ade, VCE
(lc = 2 Ade, VCE

8

-

60
40

-

-

10

Collector-Emitter Saturation Voltage
(lc = 1 Ade,ls = 0.2 Adc)
(lC = 2 Adc, Ie = 0.5 Adc)
(lc = 4 Ade, Ie = 1 Adc)
(lc = 2 Ade, Ie = 0.5 Adc, TC = 100°C)

VCE(sat)

Base-Emitter Saturation Voltage

VeE(s.t)

(lc
(lc
(lC

-

hFE

= 5 Vde)
= 5 Vde)

Vde

-

-

-

-

0.5
0.6
1
1

-

-

1.2
1.6
1.5

IT

4

-

-

MHz

Cob

-

65

-

pF

-

Vdc

-

= 1 Adc, Ie = 0.2 Ade)
= 2 Ade, Ie = 0.5 Adc)
= 2 Ade, Ie = 0.5 Adc, TC = 100°C)

DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

(lC

= 500 mAde, VCE = 10 Vdc, I = 1 MHz)

Output Capacitance
(Vce -10 Vdc, IE

0, I = 0.1 MHz)

=

SWITCHING CHARACTERISTICS

Resistive Load (Table 2)
Delay Time

(VCC

td

-

0_025

0.1

~s

Rise Time

leI

Ir

-

0.3

0.7

~s

Storage Time

Duly Cycle';;; 1%)

Is

-

1.7

4

~s

II

-

0.4

0.9

~s

Isv

-

0.9

4

~s

'e

-

0.32

0.9

~s

'Ii

-

0.16

-

~s

= 125 Vdc,IC = 2 A,
= IS2 = 0.4 A, tp = 25 ~s,

Fall Time

Inductive Load, Clamped (Table 2, Figure 13)
Voltage Storage,Tlme

(lC

Crossover Time

leI

= 2 A, Vcl amp = 300 Vdc,
= 0.4 A, VSE(off) = 5 Vde, TC = 100°C)

Fall Time

·Pulse Test: Pulse Width", 300 ~s. Dutv Cvcle '" 2%.

1-882

MJE13004, MJE13005

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - COLLECTOR SATURATION REGION

100
TJ-12SoC

0

r-;.

0

isoc

~c

-

2:-

1.6

w

'"

r-.....

'"

~
c

>

0
0

-55°C

0

S
0.04 0.06

~
......

.... ~ ~
r' ~

ci:
c

o.4

j

t-

~

0.2

0.4

1\
\

§
>

0.1

1\

O.OS

~ 1. 1
w

1

~

TJ }-ssdc

>

0.9

'"w
~

!
:li

::l

2SOC
0.7

L

O. S

~~
~ 'L

r-

i-'L

~
.;

L

__~c_ -1IS00C

0.3
0.04 0.06

I
01

0.2

S
'"

0.4S

h

t: g 0.35
"'ci:~

'(h

~-

~~

TJ - -SSoc

WW

1

~

"'0

2S0~ / .

~>

f-

0.15
~

B 0.05

0.4

0.6

0.04 0.06

!--VCE - 2S0 V

'"
i3

01

~

8

.2>

0.2

0.4

0.6

FIGURE 6 - CAPACITANCE

/

/

I

~TJ-1S00C

I - - i--,00oC

F== F=1~OC
I - - r--SOoc

.....

1/

-

L

L

Cib

k

L

100 1== F=12S0C
10

IS00C

2k

lk

'"c

~

I - ~b:::

IC. COLLECTOR CURRENT (AMP)

FIGURE 5 - COLLECTOR CUTOFF REGION

~

~ rL

L
V;:: V

>

10 k

...

01

IC/IB -4

IC. COLLECTOR CURRENT (AMP)

~

O.S

~ ~ 0.25

I

>

0.55

z
c

f-

0.3

FIGURE 4 - COLLECTOR-EMITTER SATURATION VOLTAGE

I- 1 1 I 1 ~~E(sat) ~ IC~IB _ 41
- VeE(o") @l VCE - 2 V

'"«

1\

lB. BASE CURRENT (AMP)

FIGURE 3 - BASE-EMITTER VOLTAGE

~

4A

l\.. ,......

02

0.1

IC. COLLECTOR CURRENT lAMP)

13

3A

1\ L!
\

r-

0
0.03

0.6

TJ - 2SoC

II

2A

2

8

II

\

1\ IC -I A

~ o.8

~~

VCE - 2 V
VCE - S V

1

~R.

II
1\ II

100
500

EW
'"~

300

ti

200

;t

/

~

/

2SoC
FORWARD
0.1 F= i- REVERSE
-0.4
-0.2
+0.2
+0.4
VBE. BASE·EMITTER VOLTAGE (VOLTS)

"':'ob
100
0
0

0
20
0.3

+0.6

O.S

10

30

SO

VR. REVERSE VOLTAGE (VOLTS)

1-883

r---I-300

100

MJE13004, MJE13005

IIJ

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

I~

/ 'V

I:- t--Isv

Irv

fJ, ~II'- r- I,,-

i--l '--Ic~ I--

V
VCE

I'\.
10%"-

10%Vclamp

IC PK -

I S - t- 90%181

-- --\- --

-

-~--

I--

~

-

90% IC

90% Vclamp

/
IC ........

""::'Clam p _

I"

1

SWITCHING TIMES NOTE

-

-2%IC

TIME

TABLE 1 - TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC
AMP

TC

2

...

trY

tfi

tti

t•

ns

ns

ns

ns

ns

25
100

600
900

70
110

100
240

80
130

180
320

3

25
100

650
950

60
100

140
330

60
100

200
350

4

25
100'

550
850

70
110

160
350

100
160

220
390

°c

NOTE: All Data recorded in the Inductive Switching Circuit In Table 2.

In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% Vclamp
trv = Voltage Rise Time, 10-90% Vclamp
tfi = Current Fall.Time, 90-10% IC
tti = Current Tail, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi = tc' However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors. resistive
switching is specified at 25 0 C and has beco",e a bench·
mark for designers. However, for designers of high
frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are
the inductive switching speeds (tc and tsv) which are
guaranteed at lOOoC.

RESISTIVE SWITCHING PERFORMANCE
FIGURE 8 - TURN'()N ·TlME

"'~

0.2

10

Vee -125 V= 1=
Ic/l a=5
TJ =250e

=
;? t2

0.5

]

FIGURE 9 - TURN'()FF TIME

Is

-

'r

........

r---.

/'

.....

./

.........

.....

]

.

"'
;::

0.1

-,.

0.05

0.5
'd @VaElolf) - 5 V

0.0 I
0.04

If

-r-I--l

0.02

O. 3

=:

0.2
0.1

0.2

O. I
0.04

0.4

IC' COLLECTOR CURRENT lAMP)

1-884

VCC-125V
Iclla - 5
TJ - ~50C

0.1

0.2
0.5
IC, COLLECTOR CURRENT lAMP)

MJE13004, MJE13005

TABLE 2 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

IN4933

Vee

.'25

v

L
0.001 IlF

MR82S·

33 IN4933

N

Vclamp

Dutv Cycle <; 10%
t,.tf"'- 10ns

• Selected for;;'" 1 k V

-4.0 V

NOTE
PW and Vee Adjusted for Desired
RS Adjusted for D •• lred IS1

Ie
- VBE(offl

Coil Data:
Ferroxcube Core #6656
Full Bobbin (-16 Turns) #16

VCC=125V

GAP for 200 ,u.H/20A

Vee'" 20 V

Leail '" 20D$LH

Vcl Bmp " 300 Vdc

Re' 62 n
01 :: 1 N5820 or Equlv

RB' 22 n

OUTPUT WAVEFORMS

'f Clamped
IC

en

::i!

'1 Adjusted to

...ow

Obtain

II:

Ie
Test Equipment

~
;:

Scope - Tektronix

Leoll (ICpkl

'1 ~

Inw

VCE

...

'2

~

475

VCC

or Equivalent

Leoll (ICpkl
Vel amp

< 10 ns
Duty Cycle'" 1 0%

t r . tf

RS and RC adjusted
for desired'S and Ie

FIGURE 10 - TYPICAL THERMAL RESPONSE [Z6JCltiJ
7
S

o ~ o.s

3
2

02

I-"

....

01
1
;;; 0.0 7 - DOS

~

S

....
: 00 003

....

~ 00 2~
in
z
1"-":!: 0.0001

'"

002

~
,......
002

- '"tJUL
~

-=

Pl,kl

12~~

.",.

nnt
01

PULSE TRAIN SHOWN

READ TIME AT 11
TJlokl - TC ~ PIOkl ZnJCllI

DUTY CYCLE. 0 ~ IJ ·12

Slj G

ODS

ZoJCIII ~ 

1.2

..'"

l'-

0

'
"
-1

~C

'"w

~ ,,1'\

0

:i

8
6

~

'"

0.2

0.3

~8

0.4

00.050.07 0.1

:--

-

0.6

--:-

0.4
0.1

0.2

-

!--JODC

_t-

0.3

-

0.5

~
w

0.4

----

~

0.3

~

~DC'_

0

r--

"....

f-""""

O.S 0.7
IC. COLLECTOR CURRENT (AMP)

9

Ih
150 DC

/0'

../ .M
Q
---:::;::.

0.3

25DC

~

-t-'

0.2

10

0.5

0.7

10

Ie. COLLECTOR CURRENT (AMP)

FIGURE 10 - CAPACITANCE

I

/

I

=

,....,12S DC

-

-IOODC
-7S"C

-

C--SODC

./

..
'""

I

Cib

w

~

I

500

t3 20 0

t.

~

10 0

Cob

50

==

r::=25 DC
: 0 = rREVERSE
FORWARD
0.1
-04
-02
0
+0.2
+04
VSE. SASE·EMITTER VOLTAGE (VOLTS)

I---+.

2K

~ lK

/

./

TJ·25 DC

5K

I

I
-TJ=ISODC

I

TJ--S5 DC/

10K
=VC IE·2S0V

8

I

lells = 3

I

IK

10

0.7

>
>" 0.2

FIGURE 9 - COLLECTOR CUTOFF REGION

'"
~

O.S

o

10K

a

0.3

FIGURE 8 - COLLECTOR-EMITTER SATURATION VOLTAGE

~

TJ - -SSDC

>
>- 0.8

'z""

0.2

IS. SASE CURRENT (AMP)

IC/IS - 3

1.2

~ 100

"-.

~

0.6

1.4

1

-

i'.

0.7

'"':;

_

SA

\

\

>

1.6

..

\
\

SA

\\

0.8

10

FIGURE 7 - BASE-EMITTER SATURATION VOLTAGE

~
w

3 A

~

I I

0.5 0.7
IC. COLLECTOR CURRENT (AMP)

1.8

~

IC= I A

0

I--.

TJ = 2SDC

\

~

VCE = SV

4
0.1

\

0

I

:!=

20
100.1 0.2
+06

0.5

10

20

50

VR. REVERSE VOLTAGE (VOLTS)

1-890

IOU 200

500 1000

MJE13006,MJE13007

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE
RESISTIVE
SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

III

+125 V

Vcl amp
Duty Cycle :so;; 10%

• Selected tor

~

1 kV

tr,tf< 10ns

VCE
-4.0 V

51

NOTE
PW and V CC Adjusted for Desired Ie
Rs Adjusted for Desired IS1

Coil Data:
Ferroxcube Core #6656
Full Bobbin ( .... 16 Turns) #16

If Clamped

GAP for 200

~H/20A

Vclamp = 300 V

Leol!;; 200 J.lH

OUTPUT WAVEFORMS

:IE

t1 Adjusted to
ObtaI" Ie

II:

o

LI.

W

i

VCC'125 V
RC • 25 fl
01 = 1 N5820 or Equlv
RB'10n

\e

In

Iiiw

VCC' 20 V

Lcod (leM)

'1 ~

veE

Vee

Test Equipment
Scope - Tektronix
475 or Equivalent

Leo,\ 0CM I·

'2 ~

I-

Vctamp

t r. tf < 10 ns
Duty Cvcle "" , .0%

AS and RC adjusted
for desired I B and

Ie

APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS
INTRODUCTION

The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage
and current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated
in Table 2.(1)
VOLTAGE REQUIREMENTS

Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits Band C in Table 2 illustrate applications
that require high blocking voltage capability. In both
circuits the switching transistor is subjectad to voltages
substantially higher than VCC after the device is completely off (see load line diagrams at Ie = Ileakage "" 0
in Table 2). The blocking capability at this point depends
on the base to emitter conditions and the device junction
temperature. Since the highest device capability occurs
when the base to emitter junction is reverse biased
(VCEVI. this is the recommended and specified use
(1)

For detailed information on specific switching applications,

see Motorola Application Notes AN·719,AN·737A.AN·767.
and AN·752.

1-891

condition. Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) both at 250 C
and 1000 C. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn-on and turnoff. If the load contains a significant capacitive com ponent,
high current and voltage can exist simultaneously during
turn-on and the pulsed forward bias SOA curves (Figure 1) are the proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be ·held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as a Reverse Bias Safe
Operating Area (Figure 2) which represents voltagecurrent conditions that can be sustained during reverse
biased turn-off. This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
In the four application examples (Table 2) load lines
are shown in relation to the pulsed forward and reverse
biased SOA curves.

MJE13006,MJE13007

handling capability and low saturation voltage. On this
data sheet, these parameters have been specified at 5
amperes which represents typical design contlitions for
these devices. The current drive requirements are usually
dictated by the VCE(sat) specification because the maxi·
mum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.

VOLTAGE REQUIREMENTS (continued)

DJ

In circuits A and D, inductive reactance is clamped by
the diodes shown. In circuits Band C the voltage is
clamped by the output rectifiers, however, the voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. A snubber network or an additional clamp may
be required to keep the turn·off load line within the
Reverse Bias SOA curve.
Load lines that fall within the pulsed forward biased
SOA curve during turn·on and within the reverse bias
SOA curve during turn-off are considered safe, with the
following assumptions:
(1)

The device thermal limitations are not exceeded.

(2)

The turn-on time does not exceed 10 fJS (see stan·
darn oulsed forward SOA curves in Figure 1).

(3)

The base drive conditions are within the specified
limits shown on the Reverse Bias SOA curve
(Figure 2).

SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tfi)' For this reason considerable effort is usually devoted
to reducing the fall time. The recommended way to
accomplish this is to reverse bias the base-emitter junction
during turn-off. The reverse biased switching characteristics for inductive loads are discussed in Figure 11 and
Table 3 and resistive loads in Figures 13 and 14. Usually
the inductive load component will be the dominant
factor in SWITCHMODE applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switching characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, (See Table 1)
providing correlation between test procedures and actual
use conditions.

CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy

RESISTIVE SWITCHING PERFORMANCE
FIGURE 12 - TURN-OFF TIME

FIGURE 11 - TURN,ON TIME

70a
50a

-

K

lK
vCC ~ 125 V
Ic/is - 5
TJ ~ 25'C

......
"-

f'.- I'."

K

.L

70 a

I\..

0

f'- "I'

a

r--

I"

td@ VSE(,ff)

toa

~

~ 50 a

V

I--

'"

300

I'\..

1"-

5V
10a

a
a

I"I'
tf

0.2

0.3

t::

0.5 0.7

10 a0.1

10

FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS

_r90% VCEM ~O% ICM

Vclamp -

IS-

t-

10%
VCEM

90% lSI

--

--

-- --\-\ -- ---- -............

~

0.5

0.7

r-

V

1

10

Ie

~

-'\.

/

0.3

FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
(at 300 V and SA with IBI = 1.6A and VBE(offl = 5 VI

!-- - t s v - _tev ~h"" _t,,_
- j -tc--\
Vclamp

0.1

IC, COLLECTOR CURRENT (AMP)

IC. COLLECTOR CURRENT (AMP)

IC

r--.

VCC - 125V
Ic/lS ~ 5
TJ=25'C

"-

;::

-'

t,

l-

VeE

?

>

0

c

~

;;
o
"'
w

M

"l

10% .......
ICM- r;:~
IC

IZ

w

~

:>
u

o

a:
a:

I.J

>
Ie

TIME

TIME

1-892

20 ns/DIV

MJE13006,MJE13007

TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS

CIRCUIT

LOAD LINE DIAGRAMS

SERIES SWITCHING
REGULATOR

16A - - - - "\

TIME DIAGRAMS

Turn-On IForword Bios) SOA

Y"'" to" < 10".

Duty Cvcle <: 10%
Te-l00o~ PO~320OW®
\

::

~

" ..
300V
SA--'-----("':

u

Turn-Off (Reve'. B1a.) SOA
1.5 V <: VSEloff) .;; 9.0 V

Duty Cycle <; 10%

A

Time

,.......--1._--,

VeE
Vee
700 VG)

Collector Voltage
Notes:

CD

MJE130Q7 Voltage Ratings (VceO(sus' and VCEV) are Shown,

MJE13006 Ratings are 100 V Lower.

teL,
Time

~ Sa. AN·669 for Puis. Power Derating Procedure.

RINGING CHOKE
INVERTER

16A----,

/Turn-On (Forward Bias) SOA
t on oli;10.u.s
Duty Cycle <: 10%

~

\

~ Te - 1000 e _ P O = 320OW@)

~

~I

a

"
SA

v: 'I

I

B

~~~:)I--------ft
CD

Collector Voltage
MJE13007 Voltage Ratings (VCEOCIUI) and Vcev) Are Shown.

MJE 13006 Ratings Are 100 V Lower.
~ See AN-569 For Pulse Power Derating Procedure
l6A - - -

gJ

o+--liii

-,..r
/

PUSH-PULL
INVERTER/CONVERTER

Vo

\

~ Te ~ 1000e~,po

= 3200W@)

<

a
f

Turn-Off (Reverse Bias) SOA

SA _---'L-_ _-.:

1.5 V .;; VSEloffl .;; 9.0 V
Dutv Cvcle :so;; 10%

I

-u!

Vee
vee

Vee
Collector VOltage
Notes:

G>

MJE13001 Voltage Ratings (VCEO(sus) and VCEV} Are Shown,
MJE13006 Ratings Are 100 V Lower.
~ See AN·569 for Pulse Power Derating Procedure.
Turn-On (Forward Bias) SOA
15A----,......- 'on';; lO l's
\
Dutv Cycle"': 1 0%

Te~ 100o e - ' Po = 3200W@)

j

E
Vee

Solenoid

~

a

"
SA

300 V

Turn-Off (Reverse Bias) SOA

1.5 V.;; VSEloffl .;; 9.0 V
Duty Cycle'" 10%

700 V G)
Notes:

CD

m

VeE

+

SOLENOID DRIVER

IT:J~

Turn-On (Forward Bias) SOA
ton';; 10l's
Duty Cycle" 10%

Vee

o

__ t

Leak age Sp Ike
/'

VeE

Notes:

c

Ie

I~
t~toff

300 V

Collector Voltage
MJE13007 Voltage Ratings (VCEO(sus) and VCEV) Are Shown,
MJE1a006 Ratings Are 100 V Lower.

~ See AN·569 for Pulse Power Derating Procedure.

1-893

t

MJE13006,MJE13007

TABLE 3 - TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC
AMP

TC

3

toY
ns

trv
ns

tfl
ns

ttl
ns

te
ns

25
100

730
1000

115
160

100
100

110
150

200
250

6

25
100

SOO
860

SO
84

23
60

4
10

86
136

8

26
100

650
880

26
52

2S
80

4
20

42
1S0

°c

NOTE: All Data recorded in the Inductive Switching Circuit In Table 1.

SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage wave'
forms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% lSI to 10% VCEM
trY = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
tti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn·off waveforms is shown in
Figure 13 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN·222A:
PSWT = 1/2 Vcele(tc! f
Typical inductive switching waveforms are shown in
Figure 14. In general, trv + tfi "" tc' However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2SOe and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCHMODE" transistor are the inductive
switching speeds (t c and t sv ) which are guaranteed at
1000 e.

1-894

®

MJE13008
MJE13009

MOTOROLA

12 AMPERE

NPN SILICON
POWER TRANSISTORS
300 and 400 VOLTS
100 WATTS

SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJEI3008 and MJE13009 are designed for high-voltage,
high-speed power switching inductive circuits where fall time is
critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflectioncircuits.
SPECIFICATION FEATURES:
•

Designer's Data for
"Worst Case" Conditions

VCEO(sus) 400 V and 300 V

•

Reverse Bias SOA with Inductive Loads

•

Inductive Switching Matrix 3 to 12 Amp, 25 and lOOoC
... tc @ 8 A, lOOoC is 120 ns (Typ).

@

T C ; lOOoC

•

700 V Blocking Capability

•

SOA and Switching Applications Information.

The Designers Data Sheet per·
mits the design of most circuits
entirely from the information pre·
sented. Limit data - representing
device characteristics boundaries are given to facilitate "worst case"
design.

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage

Emitter Base Voltage
Collector Current - Continuous
- Peak (1)
Base Current - Continuous

-Peak(l)
Emitter Current - Continuous
-Peak (1)
Total Power Dissipation@T A - 2SoC

Symbol

MJE13008

VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
Po

300
600

Derate above 25°C
Total Power Dissipation@Tc=250C

Derate above 25°C
Operating and Storage Junction

Po

I MJE13009

I

400
700

1
9
12
24

Vdc
Vdc
Vdc
Adc
Adc

6

12
18
36
2
16
100

Adc
Watts
mW/oC
Watts

BOO

TJ,T stg

Unit

-65 to +150

Thermal Resistance. Junction to Case
Thermal Resistance, Junction to

r'f'-

°c

B

Soldering Purposes. 1/8"

C

D

Symbol

Max

Unit

F
G
H

R8JC
R9JA

1.25
62.5

°C/W
°C/W

K
L

TL

275

°c

Ambient

J
N

Maximum Lead Temperature for

from Case

D

R
S

for 5 Seconds

T
U

(1)

Pulse Test: Pul.e Width

~

V
Z

5 m•. Duty Cycle'; 10%.

NOTES
1 OIMENSION H APPUESTO ALLLEAOS
2 DIMENSION LAPPUESTO LEAOS 1
ANOJ

DIM
r-~~
I
1575

mW/oC

Temperature Range
THERMAL CHARACTERISTICS
Characteristic

STYLE I
PIN 1 BASE
2 COLLECTOR
3 EMITTER
4 COllECTOR

965
406
064
361
241
279
036
1210
114
483
2.54
2.04
1.14
5.91
O.DD
1.14

-

INCHES

MIN

0575
1029 0380
482 0160
089 0025
373 0142
267 0095
393 0110
056 0014
1421 0500
139 0.045
5.33 0190
3.04 0.100
279 0.08D
1.39 0.D45
6.46 0.235
1.21 D.DDD
- D.D45
2.D3
-

CASE 221A.lJ2
TO·220AB

1-895

MAX
0620
0405
0190
0.D35
0141
0105
0155
0.022
0562
0055
0210
0120
D.IIO
D.055
D.255
D.D5D

-

D.DSD

MJE13008,MJE13009

ELECTRICAL CHARACTERISTICS ITC· 25 0 C unless otherwise noted.)
Symbol

Characteristic

Min

Typ

Max

300
400

-

-

-

-

1
5

-

1

Unit

'OFF CHARACTERISTICS
Coliector~Emitter

Sustaining Voltage

Collector Cutoff Current

mAde

ICEV

IVCEV· Rated Value, VBElofl) • 1.5 Vde)
IVCEV • Rated Value, VBEloffl = 1.5 Vde, TC • 100o C)
Emitter Cutoff Current

IVEB • 9 Vde, IC •

Vde

VCEOlsus)
MJEI300B
MJEI3009

IIc·'0mA,IB=0)

lEBO

mAde

0)

SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased

See Figure 1

Clamped Inductive SOA with Base Reverse Biased

See Figure 2

'ON CHARACTERISTICS
hFE

DC Current Gain

IIC = 5 Ade, VCE • 5 Vde)
IIc • 8 Adc, VCE = 5 Vdc)
Collector·Emitter

Sa~uration

40
30

8
6

Voltage

Vde

VCElsat)

IIC = 5 Adc, IB = lAde)
IIC· 8 Ade, IS = 1,6 Ade)
IIc = 12 Ade, IB = 3 Adc)
IIc =8 Adc, IS = 1.6 Adc, T C = 100°C)

..

Base-Emitter Saturation Voltage

-

1

..

..

..

1.5
3
2

-

-

-

1.2
1.6
1.5

fT

4

-

-

MHz

Cob

-

180

-

pF

td

-

0.06

0.1

~s

tr

-

0,45

1

~s

ts

-

1.3

3

~s

tf

-

0.2

0.7

~s

Vdc

VSEls.t)

lie = 5 Adc, IS = 1 Adc)
lie =8 Adc, IS = 1,6 Adc)
lie =8 Adc, IB = 1,6 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product

IIc

= 500 mAde, VeE = 10 Vdc, f·

1 MHz)

Output Capacitance

IVcs' 10 Vde, IE· 0, f · 0 1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)

Delay Time

1Vec = 125 Vdc, IC

Rise Time

lSI

Stordge Time

Duty Cycle'" 1%)

= IS2 = 1,6 A,

=8 A,
= 25 ~s,

tp

Fall Time
Inductive Load, Clamped (Table 1, FIgure 13)
Voltage Storage Time

lie

tsv

-

0.92

2.3

~s

Cronover Time

lSI

te

-

0.12

0.7

~s

'Pulse Test. Pulse WIdth

=8 A, Vclamp =300 Vdc,
= 1.6 A, VSEloff)· 6 Vdc, Te = 100°C)
-- 300 1'$, Duty Cycle -- 2%,

1-896

MJE13008,MJE13009

FIGURE 2 - REVERSE BIAS SWITCHING SAFE
OPERATING AREA

FIGURE 1 - FORWARO BIAS SAFE
OPERATING AREA
4

10 0
0

-

0

~
~

;a

TC·25 0 C-

2
1

g; o. 5

~

-

-

-

10
5

0

-THERMAL LIMIT
- BONOING WIRE LIMIT
SECONO BREAKOOWN LIMIT
CURVES APPLY BELOW RATED VCEO

o. 2

10

30

20

50

70

\.

\

6

\

4

MJEI300B;;;;;;
MJEI300S-

J

\

0
Bf-- - r-- Te '" 100 e
IB1=2.5A

8 o. 1
:2 0.05
0.0 2
0.0 1
5

2

100".~ ~"=

1m.

rd,

lOps

10

200

~~

300

2

~JEI300B~

~

"""'"-I-.

~EI300~

~

5 V
T"-t- 3
V-

.5V
400
500
600
BOO
700
VCEV, COLLECTOR·EMITTER CLAMP VOLTAGE (VOLTSI

0

500

VBE(olfl· 9 V

~

100

VCE. COLLECTOR - EMITTER VOLTAGE (VOLTSI

200

300

The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 1 is based on TC = 25 0 C; TJ(pkl
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 25 0 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 1 may be found
at any case temperature by using the appropriate curve on
Figure 3,
TJ(pkl may be calculated from the data in Figure 4,
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown,
Use of reverse biased safe operating area data (Figure 21
is discussed in the applications information section,

FIGURE 3 - FORWARD BIAS POWER DERATING
1

'"

O.B

"'t;
0

~

"

r-.

i'- r1"'-

o. 6

'"
;::

ffi
"'~

THERMAL
OERATING

o.4

f'..

f"..

"

o. 2

~

r-...

i'-.

0
20

40

~

--r-.

t'-...

;z

c

SECONO BREAKDOWN
DERATING

r-.

140

60
BO
100
120
Te, CASE TEMPERATURE (OCI

160

FIGURE 4 - TYPICAL THERMAL RESPONSE

[ZeJclt))

0
)

5

o • 05

--"

3
2

02
01

1

;£ 00 ) - 005
~ 005

~

r-

003

~ 002f-'
in
z

~

00

002

~

Plpk)

tJUl
~~~

V

w-::::: I-

1
,---- 1--'002

001

I-- I- -.1-'
z"JCIt) • ,II) ROJC
ROJC ·1.25"CIW Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT!J
TJlpkl - TC· Plpk) ZOJCII)

OUTY CYCLE. 0 ·!J1I2

SljG\E liLr]
005

01

IIIII
02

10

05
I,

TIME

1-897

(ms)

I I
20

I I I IIIII
50

100

I

I

I I I III

200

500

10k

MJE13008, MJE13009

FIGURE 5 -DC CURRENT GAIN

FIGURE 6 - COLLECTOR SATURATION REGION

0

2

~o
~ ~IS00C

0

-r--

"'

I.6

>

1. 2

'"
~
o

25 0 C

r--." r--,

ao

7

VCE

S
0.2

0.3

O.S

i SV

~

"

0

>
>'

rO.

~.2

0.3

17-

II" I

--,.-

~00.

J....

-

2:

•

"'~

o. 3

:;

/'f50 0C

--55'C

o

> O. 2
>'

.... e;::;-

0.5

5

3

7

1

0
0.2

20

0.3

O.S

a

FIGURE 10 - CAPACITANCE

8
,;

I

I

Cib

2K

-TJ·'50·C

r
'"

10

IC. COLLECTOR CURRENT (AMPI

4K

-

moc

-

2:

L

r - - rlOOoc

=

o r-----

./

-:-.15 C

80 0
600

~

400
200

~Ob

1---50 0C
100
B0
60

t== ~2S0C

F REVERSE
-02

FORWARO

+02

"'04

II
T)2~0~

......

U

'"~

-

IK

~

/

O. I f =
·04

2S'C

0.7

lK

~ 100

L""'-! V

o. I

=VCE' 250 V

~

-

Ic/la' 3

FIGURE 9 - COLLECTOR CUTOFF REGION

~

1

o. 5

10K

z

0.7

"-

TJ"500 C-!r--

IC. COLLECTOR CURRENT (AMPI

-i

O.S

o. 6

~

O.6

0.3

:---

,

FIGURE 8 - COLLECTOR·EMITTER
SATURATION VOLTAGE

o. 7

2S°S-

O. a

0.2

\

\

lB. BASE CURRENT (AMPI

TJ' -SSoc

:;

0
0.05 0.07 0.1

>

20

\

r-..

o

10

Iclls' 3

~

\

u

II
II

2:

\

8j 0..

FIGURE 1- BASE·EMITTER SATURATION VOLTAGE

~

\

0.a

o

,

\12 A
\

BA

SA

\3A

\

~

IC. COLLECTOR CURRENT (AMPI

1.2

A

>--

0.7

1.4

1\
IC"

"'
>--

SSOC

0

'""'<:

TJ' 2S oC

2:

0

0 0.1 0.2
'06

VBE. BASE EMITTER VOLTAGE IVOLTSI

1-898

O.S

S
10 20
I
2
5
VR. REVERSE VOLTAGE (VOLTSI

I 0

20

MJE13008,MJE13009

TABLE 1 - TEST CONDITIONS FOR DYNAMIC PERFORMANCE

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

RESISTIVE
SWITCHING

III

IN4933

+125 V

R

5V

0.001

~F

33 IN4933

Duty Cycle <; 10%
t r • tf OS; 10

ns
-4.0 V

NOTE
PW and Vee Adjusted for Desired
RS Adjusted for Desired le1

Ie

Coil Data:
Ferroxcube Core #6656
Full Bobbin (-16 Turns) #16

- VBE(off)

GAP for 200 IJH/20A
Leoil:: 200 ~H

Vee

=

20 v

Vclamp '" 300 Vdc

Vee = 125 v
RC - 15 n
01 "" 1 N582D or Equiv
RS"" 5.6

If Clamped

n

OUTPUT WAVEFORMS

t1 Adjusted to
ObtaLn

Ie
Test Equipment

Leol! ('eM)

'1

~

Vee

Scope - Tektronix
475 or Equivalent

Leo" (ICM )

t2::O::

< 10 ns
DutY Cvcle '" 1 0'

t r . tf

Vclamp

RS and RC adjusted
for deSired
and

'e

APPLICATIONS INFORMATION FOR SWITCHMODE

Ie

SPECIFICATIONS

condition. Maximum ICEV at rated VCEV is specifIed
at a relatively low reverse b,as (1.5 Volts) both at 25 0 C
and lOOoC. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements
in switching applications occur during turn-on and turnoff. If the load contains a significant capacitive component,
high current and voltage can exist simultaneously during
turn-on and the pulsed forward bias SOA c'urves (FIgure 1) are the proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously dUring turn-off, in most cases,
with the base to emitter junction reverse biased. Under
these conditions the collector voltage must be held to a
safe level at or below a specific value of collector current.
This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe
level for these devices is specified as a Reverse BIas Safe
Operating Area (Figure 2) which represents voltagecurrent conditions that can be sustained during reverse
biased turn-off. This rating IS verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
In the four application examples (Table 21 load lines
are shown in relation to the pulsed forward and reverse
biased SOA curves_

INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage
and current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated
in Table 2.(1)

VOL TAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits Band C in Table 2 illustrate applications
that require high blocking voltage capability. In both
circuits the switching transistor is subjected to voltages
substantially higher than VCC after the device is completely off (see load line diagrams at IC = Ileakage '" 0
in Table 2). The blocking capability at this point depends
on the base to emitter conditions and the device junction
temperature. Since the highest device capability occurs
when the base to emitter junction is reverse biased
(VCEV), this is the recommended and specified use
(1) For detailed information on specific switching applications,
see Motorola Application Notes An-719, AN~737A. AN-752,
AN-767_

1-899

MJE13008,MJE13009

handling capability and low saturation voltage. On this
data sheet, these parameters have been specified at 8
amperes which represents typical design conditions for
these devices. The current drive requirements are usually
dictated by the VCE(sat) specification because the maximum saturation voltage is specified at a forced gain
condition which must be duplicated or exceeded in the
application to control the saturation voltage.

VOLTAGE REQUIREMENTS (continued)
In circuits A and D, inductive reactance is clamped by
the diodes shown. In circuits Band C the voltage is
clamped by the output rEtCtifiers, however, the voltage
induced in the primary leakage inductance is not clamped
by these diodes and could be large enough to destroy the
device. A snubber network or an additional clamp may
be required to keep the turn-off load line within the
Reverse Bias SOA curve.
Load lines that fall within the pulsed forward biased
SOA curve during turn-on and within the reverse bias
SOA curve during turn-off are considered safe, with the
following assumptions:
The device thermal limitations are not exceeded.
The turn-on time does not exceed 10 I1S (see standard pulsed forward SOA curves in Figure 1).
The base drive conditions are within the specified
limits shown on the Reverse Bias SOA curve
(Figure 2).

(1)
(2)
(3)

CURRENT REQUIREMENTS
An efficient switching transistor must operate at the
required current level with good fall time, high energy

SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time
(tfi)' For this reason considerable effort is usually devoted
to reducing the fall time. The recommended way to
accomplish this is to reverse bias the base-emitter junction
during turn-off. The reverse biased switching character·
istics for inductive loads are discussed in Fi'gure 11 and
Table 3 and resistive loads in Figures 13 and 14. Usually
the inductive load component will be the dominant
factor in SWITCHMODE applications and the inductive
switching data will more closely represent the device
performance in actual application. The inductive switching characteristics are derived from the same circuit used
to specify the reverse biased SOA curves, (See Table 1)
providing correlation between test procedures and actual
use conditions.

RESISTIVE SWITCHING PERFORMANCE
FIGURE 12 - TURN-OFF TIME

FIGURE 11 - TURN-ON TIME
lK

1K

I-

700
50

VCC· 115 V
lcllB 5
TJ -15°C

o~

700

t,

,.
-- 300

W 50 0
;::

V

':.200

~

10 0

vee 115V
IcllB 5
TJ • 15°C

~

V-

i'r"'-

~.

100

0
0.3

0.5

V-

I'
I ....

td@ VBE(off) - 5V

0
5 0,2

-

ts

lK

l"

300

-

r-tf

r-

0,7

10

100
0.1

10

IC, COLLECTOR CURRENT (AMP)

FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS

0,3

0.5

"1

-

0.7
IC. COLLECTOR CURRENT lAMP)

10

10

FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
(at 300 V and 12 A with IB1 = 2.4 A and VBE(offl = 5 VI

Ie
90% VCEM l~90% IC

Vclamp -

T

!- - 1 , , - I-trv Jl~tt. .... r-tt,-

h

10% .........
10%
VeEM- leM-

90% IBI

-- --\- -- ---

VeE

r--

oon

w

I"z%~

(!)

«
I-

Ie

--

..J

o

>

........ ~

""'"'"

~

:>

I'\.

/

Vellimp
I B - t-

I-tc~

Ie

TIME
TIME 20 ns/DIV

1-900

MJE13008,MJE13009

TABLE 2 - APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS

TIME DIAGRAMS

LOAD LINE DIAGRAMS

CIRCUIT
SERIES SWITCHING
REGULATOR

24A - - •. - '\

III

Turn-On (Forward Bias) SOA

..",. ton <; 10 Ils
\

E'TC-1000C~
~

J

12A

,

Duty Cycle" 1 0%

IC

PO=4000W@

'~350V

Turn-Off (Reverse Bias) SOA

1

1.5 V .. VBE(off) .. 9.0 V
Duty Cycle.so; 10%

ll;lO:f
Time

""'---'----.
VCE
700

v(i)

Collector VOltage
Notes:

CD

MJE13009 Voltage Ratings (VceO(sus) and VCEV) are shown.
MJE13008 Ratings are 100 V Lower.
~ See AN·S69 for Pulse Power Derating Procedure.

tll
Time

RINGING CHOKE
INVERTER
IC

Vee

-lilt

~I

N-

! ~o

I~_t
t~toff

12A

l!

~
'0
u

B

--f\

~~;:)CtE- - - -

VCC

Collector Voltage

Notes:

Leakage Spike

(j)

. t

MJE13009 Voltage Ratings (VCEO(sus) and VCEV) are shown.
MJE1300S Ratings are 100 V Lower.
~ See AN·569 For Pulse Power Derating Procedure

. /Turn-On (Forward BiasI SOA
t on '<; 10 llS

PUSH-PULL
INVERTER/CONVERTER

24A----,/

[lJ I

\

~TC:

af

V

c ve<>e+---olill

Dutv Cycle" 10%
1000 e-\,po=4000W@

\

'350 V

Turn-Off (Reverse Bias) SOA

~....

12A
Turn-On

0

1.5 v oS; VSE(offl oS; 9.0
Duty Cycle <; 10%

I

I'i- - - - ' ' - - - ,

+

@)

MJE13009 Voltage Aatlngs (VCEO(sus) and veE V) are shown,
MJE13008 Ratings are 100 V Lower.
See AN-569 for Pulse Power Derating Procedure.

\

-'----

m

Duty Cycle" 10%

TC"" 100°C _ , PO'" 4000 W

Vce
o

VeE

Turn-On (Forward Bias) SOA
24A--- - ..,\~ ton" 10jJ.s

SOLENOID DRIVER

)

ton

vee
Vce

Collector Voltage
Notes:

G>

I C [ J ; J tOff

v

~
t

<3

\,

®

350 V

'C

Turn-Off (Reverse Siasl SOA

12A

1.5 V .. VBE(off) .. 9.0 V
Duty Cycle

OliO;

10%

Solenoid

CD
Notes:

(!)
@

700 V

(i)

Collector Voltage
MJE13009 Voltage Ratings (VCEO(sus) and Vcev) are shown,
MJE1300B Ratings are 100 V Lower.
See AN-S69 for Pulse Power Derating Procedu ....

1-901

IAf

t

MJE13008,MJE13009

TABLE 3 - TYPICAL INDUCTIVE SWITCHING PERFORMANCE

III

to:

IC
AMP

TC

tsv

tti

no

trY
ns

tfi

"c

ns

ns

ns

3

25
100

770
1000

100
230

160
160

200
200

240
320

5

25
100

630
820

72
100

26
65

10
30

100
180

8

25
100

720
920

65
70

27
50

2
8

77
120

12

25
100

640
800

20
32

17

24

2
4

41
64

NOTE: All Data recorded In the Inductive SWitching Circuit In Tabla 1.

SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total
switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IS1 to 10% VCEM
trY = Voltage Rise Time, 10-90% VCEM
tfi = Current Fall Time, 90-10% ICM
tti = Current Tail, 10-2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn-off waveforms is shown in
Figure 13 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN-222:
PSWT = 1/2 VCCIC(tc! f
Typical inductive switching waveforms are shown in
Figure 14. In general, trv + tfi "" tc' However, at lower
test currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 2!PC and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a "SWITCH MODE" transistor are the inductive
switching speeds (tc and t sv ) which are guaranteed at
1000 C.

1-902

®

MJE13070
MJE13071
MOTOROLA

Designer's Data Sheet

5 AMPERE

NPN SILICON
POWER TRANSISTORS
SWITCHMODE " SERIES
NPN SILICON POWER TRANSISTORS

400 AND 460 VOLTS

80 WATTS

The MJE13070 and MJE13071 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line-operated switchmode applications such as:
•

S~itching Regulators

•

Inverters

•

Solenoid and Relay Drivers

•

Motor Controls

•

Deflection Circuits

Designer's Data for

"Worst Case" Conditions
The DeSigner's Data Sheet permits
the deSign of most Circuits entirely from
the information presented. lImit data
- representing deVice characteristics
boundanes - are given to facilitate
"worst case" deSign.

Fast Turn-Off Times
100 ns Inductive Fall Time @ 25°C (Typ)
150 ns Inductive Crossover Time @ 25°C (Typ)
400 ns Inductive Storage Time @ 25°C (Typ)
Operating Temperature Range -65 to +150 o C
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS
Symbol

Rating

MJE13070 MJE13071

Unit

Collector-Emmer Voltage

VCEOlsus)

400

450

Vdc

Collector-Emmer Voltage

VCEV

650

750

Vdc

Emitter Base Voltage

VEB

60

Vdc

Collector Current -

IC
ICM

5.0
8.0

Adc

IB
IBM

2.0
4.0

Adc

80

Watts

DIM

0.64

W/oC

A
B

-65 to+150

°C

Base Current -

Continuous
Peak 11)

Continuous
Peak 11)

Total Power DIssipation @ TC:: 25°C
@TC=100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range

Po

32
TJ, T5t9

C

Thermal ReSistance, Junction to Case
MaXimum Lead Temperature for Soldering
Purposes' 1 IS"" from Case for 5 Seconds

D
F
G
H

THERMAL CHARACTERISTICS
Characteristic

STYLE 1
NOTES
PIN 1 BASE
1 OIMENSION H APPLIES TO ALL LEADS
2 COLLECTOR
2 DIMENSION L APPLIES TO LEADS 1
3 EMITTER
AND 3
4 COLLECTOR

J

Symbol

Max

Unit

ReJC

1.56

°C/W

K
L

Tl

275

°C

N
Q

R

S

T

11) Pulse Test. Pulse Width = 5 ms, Duty Cycle .;; 10%.

U
V

Z

MIlliMETERS

'~':0 ~A7~

~~

~

9.65
406
064
361
241
279
036
1270
114
483
254
204
1.14
5.97
000
1.14

1029
482
089
373
267
393
056
1427
139
533
304
2.79
1.39
6.48
1.27

0380
0160
0025
0142
0095
0110
0014
0500
0045
0190
0100
0080
0045
0.235
0.000
0.045

0405
0190
0.035
0147
0105
0155
0022
0562
0055
0210
0120
0110
0.055
0.255
0.050

-

2.03

-

0.080

-

CASE 221A-02
TO-220AB

1-903

-

MJE13070,MJE13071

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

I

Characteristic

Symbol

Min

Typ

Max

400

-

-

Unit

OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1)
(Ie = 100 rnA. Is = 0)

VCeO(sus)
MJEI3070
MJE13071

-

-

-

0.5
2.5

ICER

-

3.0

mAde

lEBO

-

-

1.0

mAdc

450

Collector Cutoff Current
(VCEV = Rated Value. VSE(off) = 1.5 Vdc)
(VCEV = Rated Value.VSE(off) = 1.5 Vdc. TC = 100°C)

ICEV

Collector Cutoff Current
(VCE = Rated VCEV. RSE = 50

n. TC = 100°C)

Emitter Cutoff Cu·rrent

Vdc

mAdc

(VEB = 6.0 Vdc. Ie = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased

See Figure 12

Clamped Inductive SOA with Base Reverse Siased

See Figure 13

ON CHARACTERISTICS (1)
8.0

-

-

-

-

-

1.0
3.0
2.0

-

-

1.5
1.5

Id
tr
Is
If

-

0.03
0.10
0.40
0.175

0.05
0.40
1.50
0.50

~s

Isv
Ic

-

2.0
0.50
0.30

(TJ = 25°e)

'f,
Isv
Ie

0.70
0.28
0.15
0.40
0.15
0.10

~s

(TJ: 100°C)

DC Current Gain

hFE

-

(Ie = 3.0 Adc. VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage

VCE(sat)

(lC = 3.0 Adc. IB = 0.6 Adc)
(lc = 5.0 Adc. la = 1.0 Adc)
(Ie = 3.0 Adc. IB = 0.6 Adc. Te = 1DO°C)
Base-Emitter Saturation Voltage

VBE(sat)

(IC = 3.0 Adc. IS = 0.6 Adc)
(lc = 3.0 Adc. IB = 0.6 Adc. TC = 1DO°C)

Vdc

Vdc

DYNAMIC CHARACTERISTICS
Output Capacitance

(Vca = 10 Vdc. Ie = O. f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time

Fall Time

(VCC = 250 Vdc. IC = 3.0 Ade.
IBI = 0.4 Ade. Ip = 30 ~s.
Duty Cycle ';2%. VBE(off) = 5.0 Vde)

Inductive Load. Clamped (Table 1)
Storage Time

Crossover Time
Fall Time
Storage Time
Crossover Time

(lC(pk) = 3.0 A.
lSI = 0.4 Ade.
VSE(off) = 5.0 Vdc.
VCE(pk) = 250 V)

Fall Time

'f,

(1) Pulse Test: PW - 300 p.S. Duty Cycle ~2%

Pt:.!£.
18

1-904

-

-

MJE13070, MJE13071

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 1 - DC CURRENT GAIN
50

FIGURE 2 - COLLECTOR SATURATION REGION
30

I

z
;;:

'"f-

i13

30

.......

TJ

20

r--- ........

=2S'C

'-'

c

~

VCE

~

'"
""""

=50 V

\

Vi
~ 20

~OO'C

~

10

§.!

05

~

.'\

~

10

t;

70

8

SOA- r-

03
OS
10
20
IC. COLLECTOR CURRENT (AMPSI

30

50

r= ~TJ

003
002

BO

FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE

~

05 0

100'~

~
g

10

2.0

BASE-EMITTER VOLTAGE

~

-

......

TJ - 2S'C

c

~ 07

/

~

100°C

~ 05

2S'C

J

I'lf = 5.0

~ 10

~0 =

tl 01 0

'"
;;;;
~03

'-' 0.0 7

'"

01
02 03
O.S
lB. BASE CURRENT (AMPSI

~

)jY

Jf =S b

'"
~

~

005

g
c

V

~ 02 0

003

- 25'C

FIGURE 4 -

I

~

r--

20

>

~ 03 0

.......

f'--

1

~005
02

25A

IC = lOA

02

~

SO
oOB 01

.......

03

~

r\l\

1\

0.0 S
0.05

02
01

02

03

05

10

20

30

50

005

01

02 03
05
10
IC. COLLECTOR CURRENT (AMPSI

IC. COLLECTOR CURRENT (AMPSI

FIGURE 5 - COLLECTOR CUTOFF REGION

FIGURE 6 -

20

30

50

CAPACITANCE

10K

/

j
>z

I - - r--TJ 150DC
0

:i!
~

125°C

10 2

'"o

~

10

!OODC

I

8
.i?

I

/

C,b

103

t-

..,..

1/

./

~100 O

/

'-'

z

g

I

/
~

II

~

75°C

I - - ~REVERSE

TJ - 25°C

~

FORWARO

100

Cob

VCE o250V=

100

25°C
!O-I
-0.4

0
-02

+02

+04

10

+06

30 50

10

30

50

100

VR. REVERSE VOLTAGE (VOLTSI

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-905

300 500 1000

MJE13070,MJE13071

III]

TABLE 1 - TEST CONOITIONS FOR OYNAMIC PERFORMANCE

100

/I

! J

0

..z

10

~-351J

2•

• ...r-L

... l:
ZO
-z

2N6191

TURN ON TIME

RBI

tjA

t

p.r I
lOJlF
+ -

50

0
U

,.~:
'e 1 adjusted to
obtaIM the forced
tiFf de,lred

~2N5337

TURN OF F TIME
Use ,"ducI,,,. SWltclunD

500

PW Varied 10 AU.IM

Ie'"

~F

-=

--r

~-

"

20

+

""0V~1

y+V~l1V

002 "F
1 H P 2141
or :~UIV

.... 0

RESISTIVE SWITCHING

RBSOA AND INDUCTIVE SWITCHING

VCEOIsus)

lDOmA

100

-=

dr,ve, ., 1he Input to

b-v

the reSlSllve testcircUI1

Adjust RS1 to obtain IS1
For SWitching and RBSOA. R2 "" 0

For BVCEO(sus). R2 '"

....-W
'"
~~

U ...

!c

lCDl1

401' = IOmH vee" 10V

z

00

180~H

RCDtl;O 0 05
VCC=20V

"cou=o.7n

n

VCC=2S0V
RL = 83u
Pulse Width = 10 J.lS

Vclamp - 250 V
FlS1 adjusted to attam deSired 'el

U>

INDUCTIVE TEST CIRCUIT

'":;....

~

II:

u
....
'"W
....

r

,

U

Input

S . . Abo". for

2

or

Equlval.nt

OM;all . . ConditIons

Vclamp

,

...:t

'e

jRcOil

I
I
I

lN4937

OUTPUT WAVEFORMS

I

l'0 "~,om

J- Vee

~h')
0.1 n

ve'~b

----

Vcl• mp

T,me

,,/
IC"""'"

I,

90% VCE(pk)

{CEIPkl

~

J1\ 90% IC(pk)

trv!t:! I:::~.'fo- -',,-

I- r-'sv

I~ r-'c--"", t-

V
VCE

10% VCElpk)

-- --\-, -- -"'--

I"
w'" .....
IC pk

1 8 - f- 90% 181

I, ." Leoti (lCpk J

Vee

''~
1.
~ =VCC
"L

J-12~

Vcl amp

-,

T.st Eql,upm.nt
Scope - Tektronuc
475 or Eq..... val.nt

FIGURE B - PEAK REVERSE CURRENT

80

IC.:!--.J
1

Ie

'2'" Leol! "Cpk 1

FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS

".". f-"""

...

1---.,- "t-

Il.eoil

L j

RESISTIVE TEST CIRCUIT
I, Adjusted to

Obtain

70
in
_
~ 6.0
~

!2i

5.0

a

40

gj

I.
Ie 0 3.0 A
(31 0 50

".".

~ 30

j2.0

-- -- -

-

~
,../

~

w

~~

TJ 0 25°C

..,/"

".".

1.0

~

1.0

TIME

1-906

2.0
4.0
5.0
6.0
30
VSElolf)_ BASE-EMITTER VOLTAGE IVOLTS)

7.0

B.O

MJE13070.MJE13071

SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage
times have been defined and apply to both current and
voltage waveforms since they are in phase. However,
for inductive loads which are common to SWITCH MODE
power supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate measure·
ments must be made on each waveform to determine
the total switching time. For this reason, the following
new terms have been defined.
t sv = Voltage Storage Time, 90% lSI to 10% Vcl amp
trv = Voltage Rise Time, 10-90% Vel amp
tfi = Current Fall Time, 90 -1 0% IC
tti = Current Tall, 10-2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductIve switching waveforms

is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss
during storage time and the predominant switching
power losses occur during the crossover interval and
can be obtained using the standard equation from AN·222:
PSWT = 1/2 VCCIC(tc)f
In general, try + tfi '" tc' However, at lower test currents
this relationshIp mav not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 0 C and has become a bench·
mark for designers.· However, for designers of high
frequency converter Circuits, the user oriented specifica·
tions which make this a "SWITCHMODE" transistor are
the Inductive switching speeds (tc and t sv ) which are
guaranteed at lOOoC.

INDUCTIVE SWITCHING

FIGURE 9 - STORAGE TIME

FIGURE 10 - CROSSOVER AND FALL TIMES

50

30

15

r- -

I- TJ =75°C

III

=5 0

0;-

.3

:1;::

20

/'

--

f-"'"

V

~
........

07

'"

V

VBE(oftJ =

i -

07

20

10

....

'-

J-

..........

--

~

'i

07

05

--

'fi -50 V

~

~~

I

015

50

'e- 1.OV

i.>-.

Ilf = 5 0

TJ=75°C

5OV

-T --..:.:
'f/1.0 V

02

0V

30

--

..... ........

03

05
0.5

----tfl

-

~ VBE(oIfJ=IOV

"--..

07

--Ie

10

10
20
3.0
IC. COLLECTOR CURRENT (AMPSJ

IC. COLLECTOR CURRENT (AMPSJ

5.0

FIGURE 11 - THERMAL RESPONSE

7
5

o . 05

3
'-'

~

0

2

02

01
01
« 00 71-- 005
00 5
I-- 002
~ 003

.-

;;;....-

in
~

!

~ 00 2~
in

z

~

00 l .......
001

,....

r-

foot::::
n SliG,E Illl!
002

---

~

005

01

P(pk)

tJU1.
~~~

DUTY CYCLE, 0

IIIII
02

05

10

2
I,

TIME

(ms)

1-907

ZOJC(o "rll) ROJe

ROJe

=-

1.56 0 erw Max

o CURVES AWL Y FOR POWER

PULSE TRAIN SHOWN
READ TIME AT 11
TJ(pk) - Te" P(pk) lOJCft)

=-

I I
20

t1"t2

I I IIIIII
50

100

I I
200

I I I III
500

I k

MJE13070,MJE13071

SAFE OPERATING AREA INFORMATION
Th. Sat. O...... tillll Ar.. figuroolhown in Figuroo 12 and 13 ar.
specified for th... devices under the test conditions shown.

FORWARD BIAS
FIGURE 12 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
10
5.0

'"
!Ii

~

>-

1.0

'"
c.>
'"
c
'"

0.5

~

"-

"TC = 25°C

0.2

t;

10I's~~

1.0 ms
de

2.0

MJE13070 ~
MJE13071

~ 0.1
c

'"'.0.05
J?

==

---Bonding Wire limit
----Thermal'limit

r-..

Second Breakdown limit

0.02
0.01
5.0 7.0

10

20 30
50 70 100
200 300 450
VCE, COLLECTOR - EMITTER VOLTAGE IVOLTS)

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
Ifmits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ;;. 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found
at any case temperature by using the appropriate curve
on Figure 14.
T J(pk) may be calculated from the data in Figure 11.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

FIGURE 13 - MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA
80

u;

!Ii

~

\

1

7.0
6.0

ry

>~ 5.0

'" 4.0
i:l

'"

TJ';; 100°C

c
'"
!;i

13';;' 4.0

::::l

J?

;--::.=r--- MJ13070
-I
r- MJ13071
1.0

-

100

VBEloH)

=0

For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value of
collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load .Iine
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and represents the
voltage·current conditions during reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure
13 gives R BSOA characteristics.

\

\
1
1
I

3.0

cc.> 2.0

REVERSE BIAS

\
1

M

~

VBEloH)

= 1.0 to 5 0 V

.~-.J.

\

I
\

\'

-"::::-+ -,

200
300
400
500
600
VCE, COLLECTOR· EMITTER VOLTAGE IVOLTS)

1
700 750

FIGURE 14 - POWER DERATING

0.8

'"t;

o

""r--:""-r- r"

'!. 06
~

;:::

THERMAL
DERATING

«

ffi
o

-

~

0.4

r-

-

-.. r--

r--..

""-

'"w

~

SECOND BREAKDOWN
DERATING

0.2

"'"

.......

r-......
40

120
100
80
Tc, CASE TEMPERATURE lOCI

60

1-908

i'-...

140

160

NPN

®

PNP

MJE15028 MJE15029
MJE15030 MJE15031

MOTOROLA

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

8 AMPERE

· .. designed for use as high·frequency drivers in audio amplifiers.
•

DC Current Gain Specified to 4.0 Amperes
hFE = 40(Min) @ IC = 3.0 Adc
= 20(Min) @ IC = 4.0 Adc

•

Coliector·Emitter Sustaining Voltage VCEO(sus) = 120 Vdc (Min) - MJE15028. MJE15029
= 150 Vdc (Min) - MJE15030. MJE15031

•
•

High Current Gain - Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO·220AB Compact Package

•

TO·66 Leadform Also Available

POWER TRANSISTORS
COMPLEMENTARY SILICON
120-1SO VOLTS
SO WATTS

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Svmbol

MJE1S028
MJE1S029

MJE1S030
MJE15031

Unit

VCEO

120

150

Vdc

Vce

120

150

Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation

....

VEa
IC

@TC=250C

PD

Derate above 25°C
Operating and Storage Junction
Temperature Range

2.0
SO
0.40

...

@TA=250C

.
..
.
..

16

.
.

2.0
0.D16

TJ.Tstg

..
.

B.O

..

Ie

Po

Derate above 2SoC
Total Power Dissipation

5.0

-65 to +150----

_

Vdc
Vdc
Adc
Adc

Watts
W/oC

Watts
wf'c
°c

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

I

Symbol

I

Max

I

Unit

I

R9JC

2.5

I

°CIW

Thermal Resistance. Junction to Ambient

I

I

I

62.5

R9JA

B

TA TC

C
D
F
G

u;

3.060

H

~
z

J

0

;:::

t:

ili

...........
2.040

.........

C

'"~

~

BASE
COLLECTOR
EMITTER
COUECTOR
DIM
A

FIGURE 1 - POWER DERATING

......
«

°C/W

STYLE 1.
PIN 1.
2.
3
4.

K

r-.....

L
N

1"-...'

Q

1.020

~

Ir;:....:: ~

........

..0
00

o

R
S
T

~

I
20

40

60

80

100
T. TEMPERATURE 1°C)

I

"""

120

140

1-909

U
V

Z

MILLIMETERS
MAX
MIN
14.60 1575
9.65 10.29
406
482
064 089
373
361
2.41
267
393
2.79
0.36
056
1270 14.27
114 1.39
4.83
533
2.54 3.04
2.04 2.79
1.14
1.39
5.97 6.4B
0.00
1.27
1.14
2.03
-

'I

MIN
0575
0380
0160
0025
0142
0095
0110
0.014
0500
0045
0.190
0.100
0.080
0.045
0.235
0.000
0.045

-

CASE 221A'()2

160

TO-220AB

.
0105
0155
0022
0562
0055
0.210
0120
0110
0.055
0.255
0.050

-

D.DBO

NPN MJE15028,MJE15030
PNP MJE15029,MJE15031

ELECTRICAL CHARACTERISTICS (TC
Charact.ristic

= 25°C unle •• otherwise noted)
Svmbol

I

Min

Max

120
150

-

-

0.1
0.1

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)
MJE15028, MJE15029
MJE15030, MJE15031

Collector Cutoff Current
MJEI5028, MJEI5029
MJE15030, MJE15031

Collector Cutoff Current
(VCB = 120 Vde,IE = 0)
(VCB = 150 Vde, IE = 0)

MJE15028, MJE15029
MJE15030, MJE15031

-

= 5.0

Vde, IC

I'Ade

ICBO

Emitter Cutoff Current
(V BE

mAde

ICEO

= 120 Vdc,lB = 0)
= 150 Vdc,lB =0)

(VCE
(VCE

Vde

VCEO(sus)

= 10 mAde, IB =0)

IIc

lEBO

-

-

10
10

-

10

40
40
40
20

-

I'Ade

= 0)

ON CHARACTERISTICS (1)

DC Current Gain
IIc = 0.1 Adc, VCE = 2.0
(lc = 2.0 Ade, VCE = 2.0
IIc = 3.0 Adc, VCE = 2.0
(lc = 4.0 Adc, VCE = 2.0

-

hFE
Vde)
Vde)
Vdc)
Vdc)

DC Current Gain Linearity

Typ
2

hFE

(VCE From 2.0V to 20V,IC From O.IA to 3A)
(NPN TO PNP)

3

Collector-Emitter Saturation Voltage
(lC

= 1.0 Adc,IB = 0.1

Base-Emitter On Voltage
(lC

VCElsati

-

0.5

Vdc

VSElonl

--

1.0

Vdc

Adc)

= 1.0 Adc, VCE = 2.0 Vdc)

OYNAMIC CHARACTERISTICS
Current Gain - BandwIdth Product (2)

(Ie = 500 mAde, VCE = 10 Vdc, f'est = 10 MHz)

(1 )Pulse Test' Pulse Width
121fT = I hfe ' • f test

~

300 ,Us, Duty Cycle';;;; 2 0%.

FIGURE 2 - THERMAL RESPONSE

~
:;


z

'

'"«
~

1.0

Ic/1e" 10

0.5

0.2

2.0

1.0

5.0

10

H-~~(sat)J
0.1

0.5

0.2

FIGURE 10 - TURN,ON TIMES

2.0

......

0.1

.......

5.0
3.0

td(NPN. PNP)

~

2.0

t, (PNP)

""w

1.0

>=.:

0.5

.3

,.

0.05

'1

0.02

..........

1

0.2

0.01

-

0.1
0.1

0.2

2.0
5.0
0.5
1.0
IC. COLLECTOR CURRENT (AMP)

-

t--

t,lNPN)

0.03

10
5.0

10

FIGURE 11 - TURN·OFF TIMES

vCC-eov
Ie 118 - 10
TJ - 25 0e

"1""- 2'-..

0.2

.3

'>=.:"'

1.0

10

0.5

~

IC l1e
IC. COLLECTOR CURRENT (AMP)

1.0

w

..... V

1

IC)18 -20

IC. COLLECTOR CURRENT (AMP)

.,.

V
V

VCE(satl@ ICI18 = 20

04

~ 1---" .......

.-"'. ~~

O.B ~ VeE(satl@ IC/18 = 10

>
>'

~

VCE\sat) = Ic/1e - 20

o.2
0.1

w

......

I

o.6

~

1.4

0

1.2

10

1-912

0.1

0.3

r-...

........

r-.

ts(PNP)

tf IPNP)

tf(N~ ::'t--N.
I
0.2

-

VCC = BOV
Ic/ 1e=1O.181"le2
ts INPN) TJ" 25 0C

r-

0.5
2.0
IC. COLLECTOR CURRENT (AMP)

-

5.0

10

®

MJEI6002
MJEI6004
MJHI6002
MJHI6004

MOTOROLA

5.0 AMPERE

Designer's Data Sheet

NPN SILICON
POWER TRANSISTORS

SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS

460 VOLTS
SO and 100 WATTS

These transistors are designed for high-voltage, high-speed
switching of inductive circuits where fall time and RBSOA are
critical. They are particularly well-suited for line-operated switchmode applications.
The MJE16004 and MJH16004 are high-gain versions of the
MJE16002 and MJH16002 for applications where drive current
is limited.

MJE1S002
MJE1S004

STYLE 1

,

PIN 1

Typical Applications:

..
3.

•

Switching Regulators

•

High Resolution Deflection Circuits

•

Inverters

i;

•

Motor Drives

•

Fast Switching Speeds
50 ns Inductive Fall Time @ 75°C (Typ)
70 ns Crossover Time @ 75°C (TVp)

•

1ODoC Performance Specified for:
Reverse-Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents

I:

MAXIMUM RATINGS
Rating

CASE 221A-02
Symbol

MJE1600~1

MJH1S002
MJH1S004

MJE1S004

TO-220AB
Unit

Collector-Emitter Voltage

VCEO(sus)

450

Vdc

Collector-Emitter Voltage

VCEV

850

Vdc

Emitter-Base Voltage

VEB

6.0

Vdc

Collector Current - Continuous

IC
ICM

5.0
10

Adc

IB
IBM

4.0
8.0

Adc

-Peak(l)
Base Current -

Continuous

-Peak(l)
Total Power Dissipation@Tc= 25°C
@TC=I000C
Derate above TC = 25°C
Operating and Storage Junction

Po

80
32
0.64

I

100
40
0.8

MJH1S002
MJH1S004

Watts

W/oC

TJ, Tstg

-65 to +150

°c

Symbol

Max

Unit

Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

lead Temperature for Soldering
Purposes: liB' from Case for
5 Seconds
(11

STYLE 1:
1. lASE

R8JC
TL

1.56

I

1.25

275

2. COLLECTOR
1 EMITTER

4. COLLECTOR

°C/W

Designer's Data for ··Worst Case·' Conditions

given to facilitate "worst.case" design.

1-913

. ...

•

10'

H

...

MILLIMETERS
'ICHES
..N MAX
MIN IIAX
0.... 0...
15049
UtO 0'"
4.19
0.185 0201
U5 • .D40
E us
us O.ll63

Pulse Test: Pulse Width = 5 ms. Duty Cycle';; 10%.

The Designer's Data Sheet permits the design of most circuits entirely from the infor~
mation presented. Limit data - representing device characteristics boundaries - are

DI.

•• , , ,"...
....
c

°C

CASE 340-01
TO-21 SAC

.-....

.,,, ....
521
• ,.,
, ,...,
•
•• .... '.22 .... .,
L

."
3.20
0"

0'" 0.121
0.015 0'"
12.70
0.500 0.&10
'UI 11.51 OJ .. 0...
12.19 12.10
0.500
0.111

.

MJE16002,MJE16004,MJH16002,MJH16004

I

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

I

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

450

-

-

Vdc

-

0.25
1.5

-

OFF CHARACTERISTICS (I)
Collector-Emitter Sustaining Voltage (Table 2)
(lC= 100 mA, IS = 0)
Collector Cutoff Current
(VCEV = 850 Vdc, VSE(off) = 1.5 Vdc)
(VCEV = 850 Vde, VSE(off) = 1.5 Vde, TC = 100°C)

ICEV

Collector Cutoff Current
(VCE = 850 Vde, RSE = 50 0, TC = 100°C)

ICER

-

Emitter Cutoff Current

IESO

-

mAde

-

2.5

mAde

1.0

mAde

(VES = 6.0 Vde, IC = 0)
SECOND SREAKDOWN
See Figure 17 or 18

Second Breakdown Collector Current with Base Forward Biased

See Figure 19

Clamped Inductive SOA with Sase Reverse Siased
ON CHARACTERISTICS (I)
Collector-Emitter Saturation Voltage
(IC = 1.5 Ade, IS = 0.2 Ade)
(IC = 1.5 Ade, IS = 0.15 Ade)
(lC = 3.0 Ade, IS = 0.4 Ade)
(IC = 3.0 Ade, IS = 0.3 Ade)
(IC = 3.0 Adc, IS = 0.4 Ade,
TC= 100°C)
(IC = 3.0 Ade, IS = 0.3 Ade,
TC= l000C)

VCE(sat)

-

-

1.0
1.0
2.5
2.5

MJEI6002/MJHI6oo2

-

-

2.5

-

-

2.5

MJE16oo2/MJH16oo2
MJEI6004/MJHI6004

-

-

1.5
1.5

MJEI6oo2/MJHI6002

-

-

1.5

MJEI6004/MJHI6004

-

-

1.5

5.0
7.0

-

-

MJEI6004/MJHI6004

Base-Emitter Saturation Voltage

(IC = 3.0 Ade, IS = 0.4 Ade)
(IC = 3.0 Ade, IS = 0.3 Ade)
(IC = 3.0 Ade, IS = 0.4 Ade,
TC = 100°C)
(lC = 3.0 Ade, IS = 0.3 Ade,
TC= 100°C)
DC Current Gain
(IC = 5.0 Ade, VCE = 5.0 Vde)

Vde

MJEI6002/MJHI6002
MJEI6004/MJHI6004
MJEI6oo2lMJHI6002
MJEI6004/MJHI6004

VSE(sat)

-

hFE
MJE16oo2/MJH16oo2
MJEI6004/MJHI6004

-

Vde

-

DYNAMIC CHARACTERISTICS
Output Capacitance

(VCS = 10 Vde, IE = 0, f test = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resi.Iive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time

Reli.Iive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time

Fall Time

MJE16002/MJH16002

(lC = 3.0 Ade,
VCC = 250 Vdc,
lSI = 0.4 Adc,
PW= 3OI'S,
Duty Cycle .. 2.0%)

(lS2 = O.S Ade,
RS2 = 8.0 ill

(VSE(off) = 5.0 Vdc)

td
Ir
ts
tf
ts
tf

-

30
100
1000
60

100
300
3000
300

-

400

-

Id

-

ns

130

MJE16004/MJH16004

(lc = 3.0 Adc,
VCC = 250 Vdc,
lSI = 0.3 Ade,
PW= 3OI'S,
Duty Cycle .. 2.0%)

(IS2 = 0.6 Ado,
RS2 =8.00)

tr
Is
tf

(VSE(off) = 5.0 Vdc)

(1) Pulse Tost: PW - 300 1'5, DUIV Cycle ';;2%.

Ie
*/If= 181

1-914

Is
tf

-

-

100

30
130

300

800
80

2700
350

250
60

ns

MJE16002,MJE16004,MJH16002,MJH16004

SWITCHING CHARACTERISTICS (conlinued)
Characteristics

Inductive Load (Table 2)

Symbol

Min

Typ

Max

Unit

lOY

-

1600
200
250

'c

-

500
100
120
600
120
160

no

'ii
te
lOY
Iii

lOY

-

400
80
90
450
100
110

1300
150
200

MJE16002lMJH16002

Storage Time

Fall Time
Crossover Ti me

(IC = 3.0 Ade,
lSI =0.4 Adc,
VSE(off) = 5.0 Vde,
VCE(pk) = 400 Vde)

Storage Time

Fall Time

(TJ = 100°C)

(TJ= 150°C)

Crossover Time

Inductive load (Table 2)

-

-

MJE16004/MJH16004

Storage Time

=3.0 Adc,

Fall Time

(lc

Crossover Time
Storage Time

IBI = 0.3 Ade,
VBE(off) = 5.0 Vdc,
VCE(pk)= 400 Vde)

Fall Time

-

(TJ = 100°C)

'ii
Ie
lOY
Ifi
te

(TJ= 150°C)

Crossover Time

-

no

-

-

(1) Pulse Test. PW - 300 pS, Duty Cycle ~2%.

Ie
·Pf= 181

FIGURE 1 - DC CURRENT GAIN
60
50

FIGURE 2 - COLLECTOR SATURATION REGION
2.0

~
a
'"

:1

30

~

'"...

::::-..l

20

2~

is

a'"'"
'-'
0

I

10

S5°C

r-- r- VCE = s.o V

3.0
01

1.0

~

0.1

,.

~

;

"

'"
0

os

~

0

...

-

03

OS 01

1.0

2.0

3.0

SOlO

01
0.03

10

IIIII
0 OS 0.01 0.1

Ie. COLLECTOR CURRENT (AMPS)

3.0

~

2.0

~

~

050

~

~

~

~

/

1.0

liE

........

I......

"-

I-

i'-... r-....

0.2 0 3
05 0 1 1 0
Is. BASE CURRENT (AMPS)

20

30

=
-

III = 10
TJ = 2SoC

Ilt= 10
TJ = 100°C

O.OS
0.1

;;

~

0.2

O.S

10

~

./

V

0.10

III = 5
TJ = 25°C

Q

/,;

'I

0.20

20

~
~ 15

~

Q

~

30

S.O

..,.

"1\

FIGURE 4 - BASE·EMITTER VOLTAGE

FIGURE 3' - COLLECTOR· EMITTER SATURATION VOLTAGE

~
0
a
'"

"

TJ = 25°C

II II
1\4A 5A

\

\

t;

'-' 02

1\3 A

1\

03

$'
0.2

2A

\ Ic = I A

~

Q

~ 10
SO

1 II \

Q

TJ = 100°C

ai

/

so

010

~

I"i.., Ilf=S
TJ = 2SoC

2.0

10

:i!

050

"'-

r--

~

10

Ie. COLLECTOR CURRENT (AMPS)

030
01

-

III = 10
TJ= lDUoC

02

os

I I
10

2.0

IC, COLLECTOR CURRENT (AMPS)

1-915

5.0

10

MJE16002,MJE16004,MJH16002,MJH16004

TYPICAL STATIC CHARACTERISTICS (continued)
FIGURE 6 - CAPACITANCE

FIGURE & - COLLECTOR CUTOFF REGION
10000

, I'
~

~ 1=12!i°C

./

llJOOC

.."

~1000

J"'to

~

,

.~

./

1~ ~750C

.~J."'.

. eib

, ,,

TJ" 15O"C

I

~O~

~ 100

REVERSE

FORWARD

r - t--Z50C

VCpzsaVd.-

111-1

-oA

-0.2

+G.Z

+G.4

1.0

+G.B

10
100
VII- REVERSE VOLTAGE IVOLTS)

VIE. BASE EMITTER VOLTAGE (VOLTSI

850

TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 8 - STORAGE TIME

FIGURE 7 - STORAGE TIME
10000

10000

5000

5000
YaEIDH) = OV

!

i'

2000

~

;; 2000

~

VaEloH) = 2.0 V

1

1000

In

VaEIDH) = 2.0 V

",.

VaEloH) = S.O V

500

J

VaEIDH) = 0 V

~ 1000

t==

r- r-

/I, = 5
TJ = 7soe
200 f0o- l-f0o- l-- Vee=20V
I I I
100
O.S
0.7
1.0

E 500
J

I-- t200 I-- t-

I-- I--

2.0

3.0

100
0.5

5.0

1500

~

!
-S.OV

........

OV

Ii
il00

~

........

........

500 ~

~

...........

-5.0 V

200

~

.......... VaEIDH) = 0 V -

-2.0 V

::b.

~

"'-

-)~ ~
.........
~
~

::: 100

a

VaEloH) = 0 v

~\.

a
~

VaEloH) = 2.0 V

150

it-

S.O

FIGURE 10 - COLLECTOR CURRENT FALL TIME

2.0V

n200

3.0

1000

= =t;

!

2.0

1.0

Ie COLLECTOR CURRENT lAMPS)

FIGURE 9 - COLLECTOR CURRENT FALL TIME
1000

~

I I I

0.7

Ie. eOUECTOR CURRENT lAMPS)

VBEloH) = 5.0 V j - -

/1,= 10
TJ = 75°C
Vee=20V

- 20 -

~it-

~

VaEIDH) = -5.0 V

TJ = 7soe
Vee=20V

~

I

10

0.5

I

/It = s

0.7

I I
1.0

2.0
3.0
Ie COLLECTOR CURRENT lAMPS)

5.0

1-916

50

VBE(oH) = 2.0 V

r-- t-- /If = 10
TJ = 7soe
20 r-- t--

r-r--

10
0.5

l'

VBE(DH) = 5.0 V

Vee=20V
~~~
1.0
2.0
3.0
0.7
Ie. COLLECTOR CURRENT (AMPS)

Z
~

.1

5.0

MJE16002,MJE16004,MJH16002,MJH16004

III

TYPICAL DYNAMIC CHARACTERISTICS (continued)
FIGURE 12 - CROSSOVER TIME

FIGURE 11 - CROSSOVER TIME
1000

500

== b

-Z.OV
~

I

!200
·50

VBEtoll) = Z.O,V

ZO

VBEtoll)=OV-

"

~

-.........

ffi 100

~
=

--...

10~ :---...

OV

I - 11,= 5
TJ = 75°C
I - VCC=ZOV

-

I--

10
0.5

I

0.7

~ ,/

--:t ~

VBEtoll) = 5.0 V -

I

I I

I

1.0
2.0
3.0
Ie. COUECTOR CURRENT tAMPS)

5.0

TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 13 -INDUCT'VE SWITCHING MEASUREMENTS

'C~

...... l

/

./

-

IC/

VCE(pk!
~

""

90% VCE(pk!
- I..

l ..

- --\- --

fI~I"-

r-

/

~

10% VCE(pk!

'S-

'-

~

:e

:!.
t;;

_,,,-

11l'I .......

'CPk

90% lSI

-

j 1\ 90% lC(pkl

I---l '-Ic~

VCE

FIGURE 14 - PEAK REVERSE BASE CURRENT
5.0

4.0

lsI

....-

lI! 3.0

..,'":::>

V

III
III

r;.~

.;

--- -- -- -

-

~

1.0

V

lsI =D.3A

:....-

....-

/'

'"

~

~

,/

~ 2.0

..--

I

= 0.6 A

IC=3.0A
TJ = 25°C -

/

V

o
o

1.0

2.0

3.0

VBEtoll~

TIME

4.0

5.0

6.0

t--

7.0

S.O

REVERSE BASE VOLTAGE tVOlTS)

FIGURE 15 - THERMAL RESPONSE (MJE16002 and MJE16004)

s

:::
::;

!o

1
D.7

o. 5

~

O.3

~

o.2

i

~

0=0.5

0.1

o. I

~

0.07 - . 0.05
0.05
e- 0.02
:z:
... 0.03

!

...

:

0.0 I .......

'D.Ot::::
--1

....
-;;

0.01

0.02

~ 0.02 I--

~

....

-

-

02

....-

~I-~
II
12

I

S'iG~E

rlLrf I

0.05

0.1

t.JL.Jl

P(pk)

R9JC(11 = ~11 R9JC
R9JC = I 56°CIW Max
D Curve. Apply for Powlr Pulse Train Shown
Read Time @ 'I
TJ(pk) - TC = Ptpk) RtiJC(I)

Duty Cycle. 0 = 11 lIZ

11111
0.2

0.5

10

2
t,

TIME (msl

1-917

I

I
20

I

I 111111
50

100

I

I
200

I

I II II
5011

I k

MJE16002,MJE16004,MJH16002,MJH16004

TYPICAL ELECTRICAL CHARACTERISTICS (continued)
FIGURE 16 - THERMAL RESPONSE IMJH16002 and MJH16004)

10
D.?

RfiJc(l) = r(1) RjjJC
RjjJC = 1.25°CIW Max
D Cu.... Apply for Power
Pulse Train Shown
Road Time @ 11
TJlpk) - TC = Plpk) RfiJCII)

o.~

"

0.2

r-.::

~

IiiII

O.fi

pi;;JlJl == ;::::~
-t~j
r=
ri.

O.~

0.03

=
Duty Cycle. D= 11/12 -

SINGLE PULSE

0.01
0.02 0.03

0.1

O.fi

02 0 3

-

I-

002
0.01

0.02

r=

rr-

. .. ..,," == l::::::

D' O.~
0.2
01

0.1
0.07

i=
r-

I-

I II 1111111
20

10

O.~

3.0

10

~o

30

20

100

~o

200

300

1000

500

2000

t. TIME Ims)

SAFE OPERATING AREA INFORMATION
FIGURE 17 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA (MJE16002 and MJE16004)
10
10"S"
5.0

i

2.0

IS

FIGURE 18 - MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA (MJH16002 and MJH16004)

~ ~·:!!!I~~~!~~!!I!~!~I~O~P.~S!

!

~.Om.

1.0 E

~ 0.5

"

de

~ 0.2
I

~ 0:5

-

Bonding Wire Umil
- - - - Thermal Umh

~

~

0.50

is
t;

0.20'i::t:j~=++=t::j::::t::j~dC~~j::::j:=~~~
)-

a

"

0.0 1
5.0 7.0

10

2D

30

TC= 25°C

Bonding Wire Limit
g 0.05
O.I°M~~!!~~Eg'l
Co)

_____ Thermal limit

~

S.cond Breakdown Umil

0.02

2.0

~ 1.0~11'~~~~~~'I~1.~0~mgs~!m~1

TC = 25°C

0.02t:t~;:;;=S~.~co~nd~B~r.~.~kdown~~L~im~hl-t-;t~::t:::j:=:j::::fj~

50 70 100

0.01 '-:-'-:':c'-':':--'--=---'---'-:'::-'-:~=-=---1--::':-~-'::~
5.0 7.0 10
20
50 70 100
200 300 450

200 300 450

VCE. COLLECTOR-EMmER VOLTAGE IVOLTS)

VCE. COLLECTOR-EMmER VOLTAGE (VOLTS)

FIGURE 19 - MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

10

,

\
\
\

9.0

!$. 8.0

Ii!
ac

i

7.0

TJ<;;IOOoC _

I-t--

3.0
-;... 2.0

0.8

'"
~

~

r--

"," -.....

'"

.... 0.6

'"z

~1.0
o
o

)'

I

\

VaE(o") = 1.0 TO 5.0 Y

A

I

I

'"~

f

S.cond Breakdown
Derating

0.2

""

1000

1-918

~

-

......

.....

I

500
850
700
VCE(pIc~ PEAK COLLECTOR-EMmER VOLTAGE (VOLTS)
200

-

\ .'<,.

\
100

Thermal
Derating

~ 0.4

\
I-- _ VBl(off)=O V/

- -.......

S

5.0

i3 4.0

a

,8f~4 I _

\

tl 8.0

FIGURE 20 - POWER DERATING

1.0

40

120
100
80
TC. CASE TEMPERATURE (OCI

60

"

"

140

160

MJE16002,MJE16004,MJH16002,MJH16004

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

reduce the power that can be handled to values less than
the limitations imposed by second breakdown.

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figures 17 and 18 are based on TC = 25°C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10%
but must be derated when TC;' 25°C. Second breakdown
limitations do not derate the same as thermal limitations.
Allowable current at the voltages shown on Figures 17
and 18 may be found at any case temperature by using
the appropriate curve on Figure 20.
TJ(pk) may be calculated from the data in Figures 15 or
16. At high case temperatures, thermal limitations will

REVERSE BIAS
For inductive loads, high voltage and high current
must be sustained simultaneousl during turn-off, in most
cases, with the base-to-emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse
Bias Safe Operating Area and represents the voltage-current condition allowable putting reverse biased turn-off.
This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode. Figure
19 gives the RBSOA characteristics.

+Vde -11 Vde

TABLE 1 - RESISTIVE LOAD SWITCHING
td and tr

ov

=-351f

P
1

A

·02 P F

50

1.01'F

500

~

"V

Von
OV

.:..........t

Vee = 250 Vde
RL = 83 0
le= 3.0Ade
IB= 0.3 Ade

v

OV

~
-5V

m ;::::t!:L
T.

1,""5 ns

-::-

*TektroOlx
P·6042 or

Vee = 250
RL = 83 0
le= 3.0Ade

Equivalent

-V

~

1
1

lRL

Vee

lSI = 0.3 Ade
RSI = 33 0
RS2 = 8.00
IS2 = 0.6 Ade
For VSE(off) = 5.0 V RS2 = 0 0

'Note: Adjust -V 10 obtain desired VSE(off) at Point A.

1-919

MJE16002,MJE16004,MJH16002,MJH16004

TABLE 2 - INDuctiVE LOAD SWITCHING
0.02 ~F

o
=-351f

A

fF

50

• I---.....- - - {

500

Tl-1

~Ie(pk)

-v

le~

I--.v

OV.-n -

""'-

VeE(Pk)-~h

-~

VeE~
T1 ~ Leoil (Iepk)
vee

L-

50

T1 adjusted to obtain lC(pk)

BVCEO
L: 10mH
RB2:~

Vee: 20 Volts
-Tektronix

Inductive Switching

RBSOA

L: 200 ~H

L:

RB2: 0
Vee: 20 Volts
RB 1 selected for desired IB 1

RI!~:

200~H

0
Vee: 20 Volts
RBI selected for desired IBI

Scope - Tektronix

P-6042 or

7403 or

Equivalent

Equivalent

Note: Adjust -V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS
lC(pk) : 3.0 Amps
IB1: 0.3 Amp
VBE(off) : 5.0 Volts
VeE(pk) : 300 Volts
Te: 25°C
Time Base;;
20 nslem
le(pk): 3.0 Amps
IBI :0.3Amp
VBE(off): 5.0 Volts
VeE(pk) : 300 Volts
Te: 25°C
Time Base;
20 nslem

®

MPs-nOI
IPS-nOlA

MOTOROL.A

ID
NPN SILICON ANNULAR TRANSISTORS
NPN SILICON
AUDIO TRANSISTORS

designed for complementary symmetry audio circuits to 10
Watts output.
•

Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 1.0 Adc

• Complements to PNP MPS·U51 and MPS·U51A
• Uniwatt Package for Excellent Thermal Properties 1.0 Watt @TA = 25 0 C

A

F

MAXIMUM RATINGS
Symbol

MPS·U01

MPS-U01A

Unit

VCEO

30

40

Vdc

Collector-Base Voltage

VCB

40

50

Vdc

Emitter-Base Voltage

VEB

5.0

Collector Current - Continuous

IC

2.0

Adc

Total Power Dissipation @ T A = 25°C
Derate above 2SoC

Po

1.0
8.0

Watt
mW/oC

Total Power Dissipation @ T C = 2SoC
Derate above 2SoC

Po

10
80

Watts
mWI"C

TJ.Tstg

-55 to +150

°c

Rating
Collector·Emitter Voltage

Operating and Storage Junction
Temperature Range

Vdc

L

1 2

JJ

o

1--1 G i--

1---4-N

-H-J

ST~I~E l\MITTER

2. BASE
3. COLLECTOR

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

RaJC

12.5

°C/W

Thermal Resistance, Junction to Ambient

RaJA(l)

125

°C/W

Characteristic

(1) R8JA

is measured with the device soldered into a typical printed circuit board.

Uniwatt packages can be To-S lead formed by addmg -5 to the device tlt'e and tab formed for
flush mounting by addmg -1 to the device title.

DIM

A
B

C
D
F

G
H

J
K
L

N
Q

R

MILLIMETERS
MAX
MIN

INCHES
MIN
MAX

9.14
9.53
7.24
6.60
5.41
5.66
0.38
0.53
3.18
3.33
2.54 Bse
3.94
4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 BSC
2.39
2.69
1.14
1.40

0.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSC
0.155 0.165
0.014 0.016
0.475 0.500

IS

CASE 152·02

1-921

BSC
0.106
0.055

MPS-U01,MPS-U01A
ELECTRICAL CHARACTERISTICS

25 0 C unless otherwise noted I

(T A"

Characteristic

Symbol

Min

Ma.

30
40

-

-

40
50

-

50

-

-

0.1

-

0.1

-

0.1

",Adc

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)

II]

Vde

BVCEO
MPS-UOI
MPS-UOIA

{lc = 10 mAde. 'B = 01
Collector-Base Breakdown Voltage

Vde

BVCBO

{lc = 100 ~Ade. 'E = 01

MPS-U01
MPS-UOIA

Emitter-Base Breakdown Voltage
(IE = 100 ~Ade. IC = 01

BVEBO

Collector Cutoff Current
IVCB = 30 Vde. 'E = 01

'CBO
MPS-UOI
MPS-UOIA

IVCB = 40 Vde, 'E = 0)
Emitter Cutoff Current

'EBO

Vde
",Adc

IVBE = 3 0 Vde, IC = 01
ON CHARACTERISTlCSlll
DC Current Gain
(Ie'" 10 mAde, VeE = 1 0 VdcJ

IIC = 100 mAde, VCE
{lc

= 1 OAde,

VCE

~

hFE
55

1.0 Vdel

60

= 1.0 Vdel

50

Collector-Emitter Saturation Voltage
{lC = 1.0Ade, 'B = 0.1 Adel

VCElsatl

05

Vde

Base-Emitter On Voltage
{lC = 1.0 Ade, VCE = 1.0 Vdel

VBElonl

1.2

Vde

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 50 mAde, VCE = 10 Vde, I = 20 MHzl
Output Capacitance
IVCB = 10 Vde, IE = 0, I = 1.0 MHz)

MHz

50

IT

pF

20

Cob

(1)Pulse Test. Pulse W,dth $300 JJ.s. Duty Cvcle~2 0%

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - "ON" VOLTAGES

500

1.0

z

300

>-

200

~

~

.........

VCE = 1.0 Vd,
TJ = 25 DC

-

--r-

r--..

=>

VaE@ VCE - 1.0 V

"
w

to

"

'\

C;
>

"

\

100

0.4

:>
0.2

70
50

10

50

20

100

"

--r:~

2: 0.6

~

c

~

VaElsatl@ Ic/la = 10

"'C;
......

u
u

$

I U

_TJ~25lc

0.8

200

500

1000

VCEI..t)@lclla=10

I-

o
10

20

IC, COLLECTOR CURRENT ImA)

30

50

100

200

300

500

1000

IC, COLLECTOR CURRENT ImA)

FIGURE 3 - DC SAFE OPERATING AREA
2.0

,.

0::

5

>-

~

13

'-1-.

10

0.7 I

r--

0.5

r=

r~~,

TJ 150DC
BONOING WIRE LIMIT
THERMAL L1MIT@TC=25 DC
SECONO BREAKOOWN LIMIT

Ir

"

~
8

There are two limitations on the power handling ability of a tran-

'\.

'\

0.3
0.2

~

sistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.

"

MPS.UOI. ~
MPS'j01A -

0.1
2.0

4.0

6.0

10

20

The data of Figure 3 is based on TJ(pk) = 15o"C; TC is variable

~

40

VeE, COLLECTOR·EMITTER VOLTAGE IVOLTS)

1-922

depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by secondary breakdown.

MPS·002

®

MOTOROLA

NPN SILICON ANNULAR
AMPLIFIER TRANSISTOR
designed for general-purpose, high-voltage amplifier and
driver applications_
•

High Power Dissipation - PD = 10 W@TC= 2So C

•

Complement to PNP MPS-US2

NPN SILICON
AMPLIFIER TRANSISTOR

MAXIMUM RATINGS

SVmbol

Value

VCEO

40

Yde

Collector-Base Voltage

YCB

60

Yd,

Emitter-Base Voltage

VEB

5.0

Vdc

IC

800

mAde

Rating
Collector~Emltter

Voltage

Collector Current - ContInuous
Total Power Dissipation@ T A

'=

2S"C

PD

Derate above 25 "c
Total Power Dissipation@ TC - 2S C

1.0

Watt

8.0

mWj·C

PD

Q

De rate above 25°C
OperatIng and Storage Junction
Temperature Range

Unit

10

Watts

80

mW;oC
·C

T J • T stg

-55 to .. 150

Svmbol

THERMAL CHARACTERISTICS

Characteristic
Thermal Resistance, Junction to Case

Thermal Resistance, Junehan to Amblent

ELECTRICAL CHARACTERISTICS

(T ...

Max

Unit

R8JC

12.5

·C/W

R8JA

125

·C/W

= 2S·C unless otherWise noted)

Symbol

Characteristic

Min

Max

Unit

D

OFF CHARACTERISTICS
Collector-Emltter Breakdown Voltage
(IC = I. 0 mAde, IB = 0)

BV CEO

Colleclor-Base Breakdown Voltage
(lc =UJO~Ade, IE = 0)

BVCBO

Collector Cuto{i Current
(YCB = 40 Ydc, IE = 0)

ICBO

-H--J

Yde
40

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
(COLLECTO R CONNECTED
TO TA8)

Vde
80

-

nAde
100

MILLIMETERS

ON CHARACTERISTICS
DC Current Gain

hFE

50

-

(IC = 150 mAde, VCE = 10 Yde)

50

300

(lC = 500 mAde, VCE = 10 Vdc)

30

-

(lC = 10 mAde, VCE = 10 Vde)

Collector-Emitter Saturation Voltage
(Ie = 150 mAde, IS = 15 mAde)

YCE(sat)

-

0.4

Base-Emitter Saturation Voltage
(Ic = 150 mAde, IB = 15 mAde)

YBE(sat)

-

1.3

-

Yde
Vde

'E = 0,

F

G
H
J
K
l
N

==

100 MHz

Output Capacitance

(VCB = 10 Vde,

A
8

e
o

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Produet
(Ie '" 20 mAde, VCE : 20 Vdc, f

DIM

I = 100 kHz)

IT
Cob

100

-

-

MHz

pF
20

1-923

Q

R

MIN

MAX

9.14
9.53
6.60
7.24
5.41
5.66
0.38
0.53
3.18
3.33
2.54 BSe
3.94 4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 sse
2.39
2.69
1.14
1.40

INCHES
MIN

0.360
0.260
0.213
0.015
.1

CASE 152-02

MAX

FIGURE 2 - COLLECTOR-EMITTER
SATURATION VOLTAGE versus BASE CURRENT

FIGURE 1 - NORMALIZED DC CURRENT GAIN

~.: - -- Ic': nl~A-t-iH+tttll

2.0 , - " ITTTTIrn-'---'rTTl"lTlT-,,,.-nm'-,,TTmTl

I
UIt-t-+1f-tttl*+-+-++l-HCHi

~ 0.81--I-Ft++I1ftt--H-+tfIIII~ mA t+t+tt1flH-+-t-++t~

::i

!:: ~
:E-

0.71--+-+H-tttt1I--++-I-HlfHf-+-ff 250 rnA \

o~
E
5
-'>

0.5 1--+-ttH-tttt1I--++-I-++\Hi-+-H-++I+I+-~~H++ICHi

~ ~ 0.6

500mA

\V

8~O.4

~

~~
.!! ~ 0.31--+-+I+Ittt1I--++-I-++tf\I-+-H-N-l+l+--+-H++ICHi

~~
~
> <'ii 0.2 I--+-+I+!~I--++-I-++f++f-''<-+
,~-+++ttt1if"o-d-r--+++H+!l

- - - VCE'lOV

0, 1 /-++t-t+1ftif'''',",,-d-+I-ttHtt-+-if'';-Hti~-j-+++ttffl

0.1

~I---

1--1-J...J...U..J.1J'-....L..J...1.U.J.JIIIIII.L-.-.J..II...J...L.l..IIIIL.J..U.L-IIIIII-=-=
0.1

1.0

10

100

1.0 A

0,1

FIGURE 4 - CAPACITANCE versus VOLTAGE
50

0.9

./

0.8

30

~

w

'"~

u:
.e

./

0.7

c:>

w
<.>

I
20

z

>

«

a:

I-

~

U

V

0.6

~

:it
«

<.>

W

~W

.

100

IB, BASE CURRENT (rnA)

FIGURE 3 - BASE-EMITTER VOLTAGE
versus COLLECTOR CURRENT

~c:>

10

1.0

IC. COllECTOR CURRENT (rnA)

U

0.5

-

............

" '\

............ .....

10

\ Cib

..........

),0

>

0.4

50~

It

5.0
0.1

10 '

1.0

100

0,1

1.0 A

1.0

IC, COllECTOR CURRENT (mA)

10

100

REVERSE VOLTAGE (VOLTS)

FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 6- ACTIVE REGION DC SAFE OPERATING AREA
versus COLLECTOR CURRENT
2,0

1000

'"

:E
~ 700

:'\

::>

;;: 1,0

~ 500

.§
I-

'"~

w
a:
a:

c:>

~
~

/

300

z

'" 200

.t?

100

0,7
0,5

c:>

t

~

<.>

~

"-

0,3

c:>

I
1.0

'\.

a:

\

/

!Zw
~

~

V

;;:

1'l

VCE' 20 V

z

::>
<.>

0.2

-

0,1
10
100
IC, COLLECTOR CURRENT (rnA)

1.0 A

1-924

1.0

_

'\,

- - - Thermal Limitation
- - Secondary Breakdown limitation

I

I

2.0

3.0

I

I 11111
5,0

).0

10

'\,

I

20
VCE, COLLECTOR·EMITIER VOLTAGE (VlilTS)

~
30

50

®

MPS-UOl
MPS-U04

MOTOROLA

l1li
NPN SILICON ANNULAR
HIGH VOLTAGE AMPLIFIER TRANSISTORS

NPN SILICON
AMPLIFIER
TRANSISTORS

· .. designed for horizontal drive applications, high·voltage linear
amplifiers, and high·voltage transistor regulators.
•

High Collector· Emitter Breakdown Voltage BVCEO = 180 Vdc (Min) @ IC = 1 mAdc - MPS·U04

•

Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 200 mAdc

•

High Power Dissipation Po = lOW @ T C = 25 0 C

p

MAXIMUM RATINGS
Symbol

MPS·U03

MPS-U04

Unit

VCEO

120

180

Collector-Base Voltage

VCB

120

180

Vdc
Vdc

Emitter-Base Voltage

VEB
IC
Po

Rating
Coliector·Emitter Voltage

Collector Current
Total Power Dissipation
Derate Above 2SoC

@

T A:: 2SoC

Total Power Dissipation@TC::25OC

5

Vdc

1

Adc

1
8

Watts
mW/oC

Po

10
80

Watts
mWI"C

TJ, T stg

-55 to +150

°c

-

260

°c

Derate Above 25°C
Operating and Storage Junction
Temperature Range
Solder Temperature, 1116" From Case
for 10 Seconds

STYLE 1:
PIN l.EMITIER
2. BASE
3. COLLECTOR
(COLLECTOR CONNECTED
TO TABI

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R8JA

125

Thermal Resistance, Junction to Case

R8JC

12.5

°CIW
uC/W

MILLIMETERS
DIM MIN I MAX
A

8
C

D
F

G
H

J
K

L
11

a.

R

9.14 9.53
6.80 1.24
5.41
5.68
U1L .0.5,
18
2.54 8SC
3.84 4.19
0.36
12.07
25.02
5.118
2.39
1.14
1.40

INCHES
MIN MA
0.360 0.315
0.260 0.285
0.213 0.223
1
0.12
0.131
0.100 BSC
0.166 0.185
0.014 0.016
"1.475
D.985 1.006
0.200 BSC
0.094 0.1116
0.045 0.055

CASE 162·02

1-925

MPS-U03, MPS-U04

-

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

I

I

Characteristic

Min

Max

120
180

-

120
180

-

5.0

-

-

-

0.1
0.1

hFE

40

-

-

VCE(sat)

-

0.5

Vde

VBE(on)

-

1.0

Vde

-

MHz

12

pF

110

pF

Symbol

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IIc = 1.0 mAde.IB

Vde

BVCEO

=0)

MPS-U03
MPS-U04

Collector-Base Breakdown Voltage
IIc = 100 /lAde. IE = 0)

Vde

BVCBO
MPS-U03
MPS-U04

Emitter-Base Breakdown Voltage
liE = 100 /lAde. IC =0)

BVEBO

Collector Cutoff Current

/lAde

ICBO

(VCB = 100 Vde, IE = 0)
(VCB = 150 Vde. IE = 0)

Vde

MPS-U03
MPS-U04

ON CHARACTERISTICS (1)
DC Current Gain
IIc = 10 mAde, VCE = 10 Vde)

Collector-Emitter Saturation Voltage

IIc = 200 mAde,

I B = 20 mAde)

Base-Emitter On Voltage

IIc = 200 mAde, VCE

= 1.0 Vde)

DVNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 50 mAde, V CE = 20 Vde, f = 20 MHz)

Outpu, Capacitance
(VCB

= 10 Vde,IE =0. f

Input Capacitance
(VBE =0.5 Vde, IC

35

IT
Cob

= 100 kHz)

-

Cib

=0, f = 100 kHz)

(1) Pulse Test: Pulse W,dth .. 300 /ls. Duty Cycle .. 2.0%.

TYPICAL CHARACTERISTICS
FIGURE 2 - CAPACITANCE

FIGURE 1 - CURRENT-GAIN - BANDWIDTH PRODUCT

100
70
50

~ 300
~
0-

~

200

'"f'"
:;
'"
~ 100

~
z

C
;

...

..r:

70

---

VCP ZOV
TJ' 2SoC

-r-....

30
~

.,w

"

-

~ 7.0
~ 5.0

u· 3.0

2.0

10

ZO
30
50
IC, COLLECTOR CURRENT (mA)

70

Tp 2SoC

~ 10

II:
II:
:0

30

Cib

z

1\

50

20

100

1-926

1.0
0.3 0.5 OJ 1.0

Cob- e-

Ii

II

2.0 3.0 5.07.0 10
20 30 50 70 100
VR. REVERSE VOLTAGE (VOLTS)

-

200 300

MPS-U03, MPS-U04

TYPICAL CHARACTERISTICS (Continued I

FIGURE 3 - DC CURRENT GAIN
0

-- 2S·C
r== -SS·C- _

;;:

'" 100
0
0

I-

~
u

0

i

20

Q

-

TJ ·lS0·C

200

z

B

4

,
~""- ,

1

~

l'\~

1

50
10
20
50
IC, COLLECTOR CURRENT ImAI

100

200

05

500

FIGURE 5 - COLLECTOR SATURATION REGION

">

~

08

lllill

~

\
\

\
\

04

'"

o

I-

\

U

~

02

o

200mA

\

~

~

100 rnA

IC' 25 rnA 50 rnA

u

.....

i

1

~

ii

~

H'

r-

020305071.0
2030507010
18, BASE CUARENT ImAI

01

20 30

I-

~

50 70 100

i

16a

TA' 2S·C
PULSE WIOTH • 300.,OUTY CYCLE" 2.0%

I-

~

./

~'/

a
'"o

12 a

h ?--

o

~

~
0 B . '/

~

offf/

u

...-

-

.1

\O",A

,. . .....;-;reA

...- ~

-

I I II
I I II
+250 C to +1250 C

~

10

20

L

/
V
~

-55°C to +25°C
0.5

10

5.0
20
20
10
IC, COLLECTOR CURRENT ImAl

50

100

200

2 f-- VCE '150V

~ 1 f-- TJ' IS0·C
~ 10
0:>

~ 100
o

t;

400.A

0

J.-+11:

oVo for VOE

t-2.4
0.2

I--I--

I

20~.A
I
30

V

FIGURE 8 - COLLECTOR CUTOFF REGION

600.A

~

10

.1

r--I~

+25 0 C to +125 0 C

-0.8

FIGURE 7 - COLLECTOR CHARACTERISTICS
200

500

-550C to +25 0 C

~ -16

Iii

a

200

·ove fOR VCE(sart

G

I

1111
1111

II 1111

DB

IZ

o
~ 06

20

'"Applies for le/18 ..;hFEI2

G

o

'"~

1.0

Ic/is - 5.0
50
10
20
50
100
lC. COLLECTOR CURRENT ImAI

V~

FIGURE 6 - TEMPERATURE COEFFICIENTS
16

TJ '" 25°C

!::;

~

VCElsa'I@ICIIB· 10

o

10

2:

~

VSf(onl @VeE '" 10 V

IIIIIIII
20

~

~

6

--VCE·2.0V
- - VCE·l0V

10

~

V

VBElsa,1 @ICIIB • 10

f---

~

a

Ll iil

O. 8

- -

-

7.a
5a
0.5

iii

II IIII

TJ' 2S·C

300

l1li

FIGURE 4 - "ON" VOLTAGE

SO0

-

r--

100·C

jtO- 1

8
':)'0-

40

SO

2~

10-l -0.4

REVERSE

FORWARO

2S·C
-02

+0.2

+0.4

VSE, BASE·EM1TTER VOLTAGE IVOLTSI

VCE, COLLECTOR·EMITTER VOLTAGE IVOLTSI

1-927

+0.6

MPS-U03, MPS-U04

TYPICAL CHARACTERISTICS (Continued)
FIGURE 9 - THERMAL RESPONSE
I.0

O.

o.~

0·0.5

~a
~; 0.3
1

f-- 0.1

~~

tE~

w~

.....

iii"

~Iiiii

o. ,f- ~

!~ 0.01

Single Pulse

~~O.O5

~~O.O3"'"

0.02
0.01

0.01

,1""
0.01

:EfUl --

Single Pulse

P{pk)

Dutv Cycle, 0

0.05

0.01

0.1

0.5

0.2

1.0

10

5.0

1500

10

10
50
t,TIME(msl

100",-

1 ~~
~
8

0

Ims-p-

TA' 25°C

to0
SO

E

TC' 25°C

~.

-

-" '\

di'

de

_ Bonding Wire limit

---Thermal limit Single Pulse
0

20
5
'2

--Second Breakdown limit
(Applies Below Rated VCEO)

10

20

30

50

10

200

100

100

200

SOD

1.0k

VCE. COLLECToR·EMITTER VOLTAGE (VOLTS)

FIGURE 11 - POWER DERATING
1.0

~

~ O.B

'"o
~
~

to

""'"

~
~

............

Derating

r-....

Z
;::
.

0.4

ffi
;:
~ O.2

20

40

I

I

Second Breakdown

'-....
Therm~
Derating

O.6

:0

\1/l2

2.0k

Z8JA{I)' r{l) R8JA
R8JA' 125 0 CIWMax

o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ{pk) -TC • Plpk) R,JC{t)
5.0k 10k

10k

50k lOOk

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 250 C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 250 C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found
at any case temperature by using the appropriate curve on
Figure 11.
TJ(pk) may be calculated from the data in Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations Imposed by second breakdown.

I

tOO0

200

.

-t\;-j

FIGURE 10 - ACTIVE REGION SAFE·OPERATING AREA

'"~
'"

- - Z8JC{I) • rfl) R8JC
RI1JC c 12 50CIW Max

I

0.0 I

~

-~

-

~

0.1

~

"- I"'-

f'..-.
r-.....

......

"

60
BO
100
120
TC. CASE TEMPERATURE (DC)

1-928

~
140

160

MPS-UOS
MPS-U06

@ MOTOROLA

III
NPN SILICON
AMPLIFIER TRANSISTORS

NPN SI LICON ANNULAR
AMPLIFIER TRANSISTORS
· .. designed for general-purpose, high-voltage amplifier and driver
applications.
•

High Collector-Emitter Breakdown Voltage BVCEO = 60 Vdc (Min) @ IC = 1.0 mAdc - MPS-U05
80 Vdc (Min) @ IC = 1.0 mAdc - MPS-U06

•

High Power Dissipation - PD = 10 W @ TC = 25 0 C

•

Complements to PNP MPS-U55 and MPS-U56

F

MAXIMUM RATINGS
Rating
Coliector~Emitter

Voltage

Symbol

MPs-uosl MPS-UD6

Unil

I

80

Vdc

80

Vdc

VCEO

60

Collector-Base Voltage

VCB

60

Emitter-Base Voltage

VEB

I

4.0
2.0

Adc

Vdc

Collector Current - Continuous

IC

Total Power Dissipation@ TA = 2SoC

Po

1.0
8.0

Watt
mW/oC

Po

10
80

mW/oC

-55 to +150

°c

Derate above 2SoC

Total Povver Dissipation@TC= 250C
Derate above 2SoC
Operating and Storage Junction
Temperature R aoge

TJ,Tstg

o

Watts

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR.

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case
Thermal Resistance. Junction to Ambient

Symbol

Max

Unit

R8JC

12.5

°CIW

125

°C/W

R8JA

A

c
o
G
H
K
L

N
Q

R

CASE 152-02

1-929

MPS-U05, MPS-U06

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

I

I

Characteristic

I

Min

Typ

Max

60

-

BO

-

4.0

-

-

-

-

100
100

80
60

-

-

125
100
55

-

0.18
0.1

0.4

VBE(on)

-

0.74

1.2

Vde

fT

50

150

-

MHz

Cob

-

6.0

12

pF

Symbol

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde,lB = 0)

Vde

BVCEO
MPS-U05
MPS-U06

Emitter·Base Breakdown Voltage
(IE = 100 "Ade, IC = 0)

BVEBO

Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)

Vde
nAde

ICBO
MPS-U05
MPS-U06

ON CHARACTERISTICS
DC Current Gain (1)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, VCE = 1.0 Vde)
(I C = 500 mAde, V CE = 1.0 Vdel
Collector-Emitter Saturation Voltage(1)

(lC
(lC

-

hFE

Vde

VCE(sat)

= 250 mAde, IB = 10 mAdel
= 250 mAde, IB = 25 mAde)

Base·Emitter On Voltage (11
(I C = 250 mAde, V CE = 5.0 Vde)

-

SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (11
(lC = 250 mAde, VCE = 5.0 Vde, f = 100 MHz)

Output Capacitance
(VCB = 10 Vde, IE

= 0, f = 100 kHz)

(1 )Pulse Test: Pulse Width S'300 /Js, Duty Cycle ~2.0%.

FIGURE 2 - "ON" VOLTAGES

FIGURE 1 - DC CURRENT GAIN
300
20 0

100

0

-0!,'Tj=Z50C
.'1O Vd,

-

f--t.J,,1

1111111

V:EIU~+~

8

,

........ ~

,/

VaE!on}@VCE:flOVdc

4

70

2
VCE(satJ@IC/la: 10
30
50

10

20
50
100
le,COLLECTOR CURRENT(mA)

200

0
10

500

FIGURE 3 - DC SAFE OPERATING AREA

20

50

1

.........

"

20

l\

MPSJ06

oD~. ~0---"'2L,0-L-L.150,..LL.ULllO"--"'20-.L..L,,"0L.LLJ,.!,oo

~

100

~

10

operating area curves indicate Ie - VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.

\

1/

~

I
~

0
VCE" !i.0 Vdc

3050

VeE, 'COlLECTOR.EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a
transistor: junction temperature and second breakdown. Safe

500

~

/'"

0

MPSU05,~

200

FIGURE 4 - CURRENT·GAIN-BANDWIDTH PRODUCT
~ 300

20

10
20
50
100
IC,COLLECTOR CURRENT(mA!

Irrl"'C
10

100
20
50
IC, COLLECTOR CURRENT (rnA)

200

'00

The data of Figure 3 is based on T J(pkl = 1500 C; T C is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second! breakdown.

1-930

®

MPS· U07
MOTOROLA

NPN SILICON
AMPLIFIER TRANSISTOR

NPN SI LICON ANNULAR
AMPLIFIER TRANSISTOR

... designed for general-purpose, high·voltage amplifier and driver
applications.

•

High Collector-Emitter Breakdown Voltage BVCEO = 100 Vdc (Min) @ IC = 1.0 mAdc

•

High Power Dissipation - Po

•

Complement to PNP MPS-U57

= 10 W@ TC = 25 0 C

MAXIMUM RATINGS
Symbol

Value

Unit

VCEO

100

Vdc

Collector-Base Voltage

VCB

100

Vdc

Emitter-Base Voltage

VEB

4.0

Vdc

Collector Current - Continuous

IC

2.0

Adc

Total Power Dissipaten. @ T A

= 2SoC

PD

1.0
8.0

Watt
mW/oC

Total Power Dissipaton@TC=250 C

PD

10
80

TJ,Tstg

-55 to +150

Watts
mWI"C
DC

Rating
Collector-Emitter Voltage

Derate above 25°C
Derate above 2SoC
Operating and Storage Junction

Temperature Range

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

DIM

Symbol

Max

Thermal Resistance, Junction to Case

R8JC

12.5

DC/W

Thermal Resistance. Junction to Ambient

R8JA

125

°C/W

Unit

MILLIMETERS
MIN
MAX

A
B

9.14
6.60

C

5.41

o

THERMAL CHARACTERISTICS
Characteristic

N

INCHES
MIN
M X

0.38

G
H

J
K
L
N

n

R
CASE 152-02

1-931

MPS-U07

ELECTRICAL CHARACTERISTICS (T A

~

25°C unless otherwise noted)
Symbol

Min

Typ

Max

Unit

COllector-Emitter Breakdown Voltage (11
(lC = 1.0 mAde, IB = 0)

BVCEO

100

-

-

Vdc

Emitter-Base Breakdown Voltage
(IE = 100 "Ade, IC = 0)

BVEBO

4.0

-

-

Vde

ICBO

-

-

100

nAde

60
30

-

-

110
65
33

-

0.18
0.1

0.4

VBE(onl

-

0.76

1.2

Vde

f,-

50

150

-

MHz

Cob

-

6.0

12

pF

Characteristic
OFF CHARACTERISTICS

IIJ

Collector Cutoff Current
(VeB = 80 Vde, IE = 0)
ON CHARACTERISTICS
DC Current Gain (11
(lC = 50 mAde, VeE = 1.0 Vdel
(lC = 250 mAde, VCE = 1.0 Vdel
(lC = 500 mAde, VCE = 1.0 Vdel
Collector-Emitter Saturation Voltage (11
(IC = 250 mAde, IB = 10 mAdel
(lC = 250 mAde, IB = 25 mAdel

Current-Gain-Bandwidth Product (11
(Ie = 250 mAde, VeE = 5.0 Vde, f = 100 MHzl

Output Capacitance
(1 )Pulse Test:

Vde

VCE(satl

Base·Emitter On VOIt8j!e (11
(lC = 250 mAde, VCE = 5.0 Vdel
SMALL-SIGNAL CHARACTERISTICS

(VCB = 10 Vde, IE = 0, f

-

hFE

= 100 kHzl

-

Pulse Width ~300 J,ls, Duty Cycle S 2.0%.

FIGURE 1 - DC CURRENT GAIN
200

FIGURE 2 - "ON" VOLTAGES
10

'~CE~ 1.oJ"

OS

TJ=2S oC

III
III

TJ" zsbc

OB

I
I
f-"'

vSE(satl@le/le=10

07

0

VSE(on)@Vce.:50Vdc

06

0

"-

0

05
04

\

03

1\

02

30

O.
20
5.07.0

10

20

50

70

100

200

,

500

III

10

20

50

Ie. COLLECTOR CURRENT (rnA)

10

~

0

./

200

'"""

if

5

20[1300500

\.

\

x
0;

~

2 r--TJ = 1500 C

I

5

,

100

I--""

0

,

50

FIGURE 4 - CURRENT·GAIN-BANDWIDTH PRODUCT

0

2

20

Ie. COLLECTOR CURRENT {mAl

FIGURE 3 - DC SAFE OPERATING AREA

'L

i'

VCE($IItj@IC/IB=10

o

-

~

Second Breakdown LImited

BooomgWlraLlmrted
Thermal Limltatlons@Te"'250C

"'"

AppflcabieToBVCEO

J
2.0

I IIIIII
5.0

10

i

I
20

50

.t'

'00

VeE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a
transistor: junction temperature and second breakdown. Safe
operating area curves indicate I C - VCE limits of the transistor that

must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.

100
10

50

30

5.070

Vce=S.OVdc

TJ"2SoC

J

I

10

I
20

50

10 100

200

500

Ie. COLLECTOR CURRENT (mAl

The data of Figure 3 is besed on T J(pkl = 150 0 C; T C is variable

depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second. breakdown •

1-932

®

MPS· UtO
MOTOROLA

NPN SILICON
HIGH VOLTAGE
AMPLIFIER
TRANSISTOR
NPN SILICON ANNULAR TRANSISTOR
!

I

· .. designed for high·voltage video and luminance output stages in
TV receivers.

•

High Collector·Emitter Breakdown Voltage BVCEO; 300 Vdc (Min) @ IC; 1.0 mAdc

•

Low Coliector·Emitter Saturation Voltage VCE(sat) ; 0.75 Vdc (Max) @ IC ; 30 mAdc

•

Low Coliector·Base Capacitance Ccb; 3.0 pF (Max) @ VCB ; 20 Vdc

II
I ~,

,.

MAXIMUM RATINGS

o

Rating
Collector·Emitter Voltage

Symbol

Value

Unit

VCEO

300

Vdc

Coliector·Base Voltage

VCR

300

Vdc

Emitter·Base Voltage

VEB

'6.0

Vdc

Ie

0.5

Adc

= 2SoC

Po

1.0
8.0

Watt

Total Power Dissipation @ T C :: 2SoC

Po

10
80

mW/oC

TJ,Tstg

-55to+150

°c

Collector Current - Continuous
Total Power Dissipation
Derate above 2SoC

@T A

Derate above 25°C
Operating and Storage Junction Temperature Range

mWI"C
Watts

-H- J

DIM

A
B
C

0
F

THERMAL CHARACTERISTICS
Characteristic

G
H

Symbol

Max

Unit

Thermal Resistance, Junction to Case

ROJC

12.5

°C/W

J
K

Thermal Resistance, Junction to Ambient

ROJAll)

125

°CIW

L
N
Q

(1) ROJA is measured with the device soldered into a typical printed circuit board.

R

MILLIMETERS
MIN
MAX

INCHES
MIN
MAX

9.14 9.53
6.60
7.24
5.41
5.68
0.38
0.53
3.18
3.33
2.54 BSe
3.94 4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 BSC
2.69
2.39
1.14
1.40

n.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 BSe
0.155 0.165
0.D14 0.016
0.475 0.500
0.985 1.005
0.200 BSe
0.094 0.108
0.045 0,055

CASE 152·02

1-933

'

MPS-U10

ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise notedl
Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (11
(lC = 1_0 mAde, IB = 01

BVCEO

300

-

Vde

Collector-Base Breakdown Voltage
(Ie = 100l'Ade, IE = 01

BVCBO

300

-

Vde

Emitter-Base Breakdown Voltage
(Ie = 100 I'Ade, IC = 01

BVEBO

11.0

-

Vde

Collector Cutoff Current
(VCB = 200 Vde, IE = 01

leBO

-

0.2

I'Ade

Emitter'Cutoff Current
(VBE = 6.0 Vde, IC = 01

lEBO

-

0.1

I'Ade

25

-

(Ie = 10 mAde, VCE = 10 Vdcl

40

-

(Ie = 30 mAde, Vce = 10 Vdel

40

-

Characteristics
OFF CHARACTERISTICS

ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vdel

-

hFE

Collector-Emitter Saturation Voltage
(lC = 30 mAde,lB = 3.0 mAdel

VCE(satl

-

0.75

Vde

Base-Emitter On Voltage
(Ie = 30 mAde, Vce = 10 Vde!

VBE(onl

-

0.85

Vde

Current-Gain-Bandwidth Product (11
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz!

fT

415

-

MHz

Collector-Base Capacitance
(VCB = 20 Vdc, Ie = 0, f = 1.0 MHz!

Ccb

-

3.0

pF

DYNAMIC CHARACTERISTICS

(1lPulse Test: Pulse Width ::5:300 J,ls, Duty CvcleS 2%.

FIGURE 1 -DC SAFE OPERATING AREA
600
SOD
400

;;:

I'

300

I"'-..

1',

.....

~ 200

.~

I'

ffi
II:
II:

13
II:

100

~

70

8

50

o

~:

-

~

i'

~~

"-

\

Second Breakdown Limited
Bonding Wire Limited.
TC = 250C

t-- ____ Thermal Limitations

30
15

"

I

~
20

30

50

70

100

The Safe Operating Area Curves indicate Ic-VeE limits below
which the device will not enter second breQkdown. Collector

150

load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must be observed for both steady state and pulse power conditions.

'\
1. . . . . . .

200

1\
r~
300

VCE, COLLECTOR·EMITTERVOLTAGE (VOLTSI

1-934

MPS-U10

FIGURE 2 - DC CURRENT GAIN
200
VCE

:z

;;: 100
<.0

I-

~

G

u

50

0

~
30

I

110 Vdc

T}+I~

---

20
1.0

-

.....-

----

~
~~

25°C

-

I

1---I---5r C

-

~

-..........

~

I'.......

l
" '\.

I - .....

\

\

I

I

2.0

3.0

"

5.0

70

10

30

20

70

50

'"
,
100

IC. COLLECTOR CURRENT (rnA)

FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT

FIGURE 3 - CAPACITANCES
~10 0

100

5 80

t;

0

i5
o
Ceb

a

t-...

0

'"""
:r

1""'-1"--

V

:; 40

~

ot-

0/

~ 3

.b
~

0

V

TJ = 25°C

20

"'T"

I-

1.0
0.2

~
'"u=>

Ccb' j-.....

2. 0

'""0.5

1.0

2.0

5.0

10

20

50

100

£

200

0

11.0

2.0

5.0

VR. REVERSE VOLTAGE (VOLTS)

FIGURE 5 - "ON" VOLTAGES
TJ = 25°C

0.8

~

20

0.6

VBE@VCPIOV

I

"''"

'"':;o

II
0.4

)

>

:>
j,.I

0.2

j..--

VCE(sat)@ IcllB - 10

I

o
1.0

20

IC. COLLECTOR CURRENT (rnA)

1. 0

o

10

2.0

3.0

5.0

10

20

IC. COLLECTOR CURRENT (rnA)

1-935

30

50

100

50

100

MPS -U31

®

MOTOROLA

NPN SILICON ANNULAR RF TRANSISTOR

3.5W -27 MHz

· .. designed for use in Citizen· Band and other high·frequency com·
rr.unications equipment operating to 30 MHz. Higher breakdown
.voltages allow a high percentage of up-modulation in AM circuits.
This device is designed to be used with the MPS8000 driver and the
MPS8001 R F oscillator.

RF POWER OUTPUT
TRANSISTOR

• Output Power = 3.6 W (Min)

@

NPN SILICON

VCC = 13.6 Vdc

•

Power Gain = 11.5 dB (Min)

•

High Collector·Emitter Breakdown VoltageBVCES~ 65 Vdc

•

DC Current Gain Linear to 500 mAdc

,.1
c

MAXIMUM RATINGS
Symbol

Value

Unit

VeES

65

Vdc

VE6

3.0

Vdc

Ie

500

mAde

T A = 2Soe

PD

1.0
8.0

Watt
mW/oe

Total Power Dissipation @ T C ... 2SoC

PD

10
60

Watt
mW/oe

TJ,Tstg

-55 to +150

°e

Rating

Collector-Emitter Voltage

Emitter-Base Voltage
Collector Current - Continuous

T 0 ..1 Power Dissipation

@

Derate above 25°C
Derate above 25°C
Operating and Storage Junction

D

STYLE 1:
PIN 1. EMITTER

2. BASE

Temperature Range

3. COLLECTOR

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

ROJA

12.5

Thermal Resistance, Junction to Ambient

R8JA!11

125

°eIW
°eIW

Characteristic

(1) R8JA is measured with the device soldered into

B

typical printed circuit board.

DIM

MIN

MAX

A
B

9. 4
6.60
5.41
0.38

9.53
7.24
5.6
0.53

1.14

1.40

e

D
F 3.18
3.3
G
2.54 BSe
H 3.94
4.19
J
0.36
0.41
K 12.07 12.70
L 25.02 25.53
N
5.08 BSe
Q
.39
2.69
R

CASE 152-02

1-936

MPS-U31

ELECTRICAL CHARACTERISTICS (TA

=

25 0 C unless otherwise noted.)

1~____________________~C~h~.~r~~e~r~iR~ic~__________________~I~~sy~m~bO=I~~~M~in~-L___T~y~P~-L__~M~ax~-L___U~ni~t~1

_ _I

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 150 mAde, VBE = 0)

BVCES

65

-

-

Vde

Emitter-Base Breakdown Voltage
(IE = 1.0 mAde, IC = 0)

BVEBO

3.0

-

-

Vdc

ICBO

-

-

0.Q1

mAde

Common-Emitter Amplifier Power Gain
(Pout = 3.5 W, VCC = 13.6 Vdc, f = 27 MHz)

GpE

11.5

-

-

dB

Output Power
(Pin = 250 mW, VCC

Pout

3.5

-

-

Watts

11

-

70

-

%

-

-

85

-

%

Collector Cutoff Current
(Vce = 50 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (2)
(lc = 100 mAde, VCE

= 10 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance
(Vce = 12 Vdc, IE

= 0, f = 1.0 MHz)

FUNCTIONAL TEST (Figure 1)

= 13.6 Vdc, f = 27

Collector Efficiency (3)
(Pout = 3.5 W, VCC = 13.6 Vdc, f

MHz)

= 27 MHz)

Percentage Up-Modulation (4)
(f = 27 MHz)

(1) Pulsed tNru a 25 mH Inductor

(4)
Percentage Up-Modulation is measured in the test circuit(Figure 1) by setting the Carrier Power (Pc) to 3.5 Watts with
VCC = 13.6 Vdc and noting the power input. Then the Peak

(2) Pulse Test: Pulse Width ":;300 I'S,
Duty Cycle ":;2.0%.

Envelope Power (PEP) is noted after doubling the original power

(3) 11 = RF Pout

I

IIjI!tC

input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the Vee to 25 Vdc (to simulate the
modulating voltage). Percentage Up-Modulation is then determined

_ 100

(Vec) (lC)

by the relation:

Percentage Up-Modulation =

EP
[( PpC )

112 -1 ]

-100

FIGURE 1 - 27 MHz TEST CIRCUIT

r-----.....------'""1r-----o~;~ Vdc

CI. C2 9.0-180 pF ARCa 463 or Equivalent
C3. C4 5.0·80 pF ARCa 462 or Equivalent
C5 0.02.uF Ceramic

lZ

C4

RFC2
II

C3

1-937

DISC

C6 0.1 J.lF Ceramic DISC
RFCl 4 Turns #30 Enameled Wire Wound on
Ferroxcobe Bead Type 56·590·65/38

l2

26 Turns #22 Enameled Wire (2 Layers13 Turns Each layer~ 1,4" Inner Diameter
0.22.H Molded Choke
0.68.H Molded Choke

MPS-U31

POWER OUTPUT

FIGURE 3 - VCC = 13.6 Vdc

FIGURE 2 - VCC = 12.5 Vdc
0

~
...
~

~

II

TC ~ 25 bC

E 10

V

"" VCC = 25 V
@25% Duty Cycl.

E 10


3.0 /

;

2.0

7'

1.0
0.05

...3:....
:=
0

Circuit Tuned@4.0W
VCC = 12.5 V

/"

:::>

I--TC~25

./

3.0

............

J 2.0

/.
'"

~~~~'~t~ Cycl •

V

V

0.3
0.2
Pin. INPUT POWER (WATTS)

0.1

0.5

0.7

1.0
0.05

1.0

0.07

0.1

0.2
0.3
Pin. INPUT POWER (WATTS)

VCE= 10V
TA-250C

--

30 0
200

~~

70

0

~ ~

50

TJ = 25°C

0

.... 0
Z 0

w'"

/'

~ .......

30

.t'

0

20

7. 0
5. 0
0.1

15

0.5

1.0

5.0

2.0

10

20

50

100

200

500

0.2

0.5

FIGURE 6 - DC CURRENT GAIN
200

70

~

i"""

-

-55 0C

30
20
0.5

-

25°C

50

'-'
CI

10

20

V ..

VaE( ..!)

~ 0.6

111-

w

VaE@lVCE=IOV

~
!:;
o 0.4
>
>'

--=

J

E

Ic/la = 10

o.2
VCP 10V

1.0

2.0

50

100

TJ = 25°C

0.8

~
'":::>'-'

5.0

FIGURE 7 - ON VOLTAGES

d

<

2.0

1.0

TJ = lk5 0

z 100

1.0

VR. REVERSE VOLTAGE (VOLTS)

IC. COLLECTOR CURRENT (mA)

'"....

1.0

Cib

z

"''''
a'"

0.7

FIGURE 5 - CAPACITANCE

100

z~

0.5

500

200
~

V

P.E.P. ......VCC=25V
@25% Duty Cycl.

i'

FIGURE 4 - CURRENT·GAIN - BANDWIDTH PRODUCT

i=
o

.,l

C

5.0

0

@100% Duty Cycl.

II

direuit Tuned@ 15 W
VCC=25V
@250C Duty Cycle

:::>

~ ~CC= 12.5V

0.07

II 1.

~ 7.0
w

P.E.P.

7. 0

5.0

o

20

5.0

10

20

50

100

200

500

IC. COLLECTOR CURRENT (mA)

o

0.5

2.0

5.0

10

20

50

IC. COLLECTOR CURRENT (mA)

1-938

-

t-

VCE( ..!) @lIC/IS = 10
1.0

_I--"

100

200

500

®

IPS· U45
MOTOROLA

ID
NPN SILICON
DARLINGTON
TRANSISTOR

NPN SILICON DARLINGTON
AMPLIFIER TRANSISTOR
· .. designed for amplifier and driver applications.
•

High DC Current Gain hFE = 25,000 (Min) @ IC = 200 mAdc
15,000 (Min) @ IC = 500 mAdc

•

Collector·Emitter Breakdown Voltage BVCES = 40 Vdc (Min) @ IC = 100 IlAdc

•

Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.5 Vdc @ IC = 1.0 Adc

•

Monolithic Construction for High Reliability

•

Complement to PNP MPS·U95

t-F.........

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEOI1)

40

Vdc

Collector-Emitter Voltage

VCES

40

Vdc

Collector-Base Voltage

VCB

50

Vdc

Emitter-Base Voltage

VEB

12

Vdc

Collector Current

IC

2.0

Adc

Total Power Dissipation @TA - 25°C

Po

1.0
8.0

Watt
mW/oC

Po

10
80

Watts
mW/oC

TJ,T stg

-55 to +150

°c

Derate above 25°C
Total Power Dissipation@TC:::: 25°C
Derate above 2SoC

Operating and Storage Junction
Temperature Range

t

1

1ft
~~'l

JJ
rrN
A

Max

Unit

Thermal Resistance, Junction to Ambient

R8JA

125

°CIW

Thermal Resistance, Junction 10 Case

R8JC

12.5

°C/W

(1) Due to the monolithic construction of this device, breakdown voltages of both
transistor elements are identical. BVCES is tested in lieu of BVCEO in order to
avoid errors caused by noise pickup. The voltage measured during the BVCES
test is the BVCEO of the output transistor.

8
C
D
F

G
I

H

J

K

L
N
Q

R

9.14
9.53
6.60
7.24
5.41
5.66
0.38
0.53
3.18
3.33
2.548SC
3.94 4.19
0.36
0.41
12.07 12.70
25.02 25.53
5.08 8SC
2.39
2.69
1.40
1.14

INCHES
MIN MA
0.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 sse
0.155 0.165
0.014 0.016
0.475 0.500
0.985 1.005
0.200 asc
0.094 0.106
0.045 0.055

CASE 152·02

1-939

-1LJ

STYLE 1:
PIN 1. EMITIER
2. SASE
3. COLLECTOR

MILLIMETERS
DIM MIN MAX
Symbol

J

D- r

THERMAL CHARACTERISTICS
Characteristic

A-

B-

MPS-U45

III

ELECTRICAL CHARACTERISTICS ITA

I

=

25 0 C unless otherwise noted)

Characteristic

I

Svmbol

Min

BVCES

40

Collector-Base Breakdown Voltage
IIc = 100 /lAde, IE = 0)

BVCBO

Emitter-Base Breakdown Voltage
liE = 10 /lAde, IC = 0)

Typ

Max

Unit

-

-

Vde

50

-

-

Vde

BVEBO

12

-

-

Vde

Collector Cutoff Current
IVCB = 30 Vde, IE = 0)

ICBO

-

-

100

nAde

Emitter Cutoff Current
(VEB = 10 Vde, IC = 0)

lEBO

-

-

100

nAde

25,000
15,000
4,000

65,000
35,000
12,000

150,000
-

OFF CHARACTERISTICS
Collector~Emitter

IIc

Breakdown Voltage

= 100 /lAde, VSE = 0)

ON CHARACTERISTlCS(1)
DC Current Gain
IIc = 200 mAde, VCE = 5.0 Vde)

IIc = 500 mAde, VCE
IIc = 1.0 Ade, VCE

-

hFE

= 5.0 Vde)
= 5.0 Vde)

-

Collector-Emitter Saturation Voltage
IIc = 1.0 Ade, I B = 2.0 mAde)

VCElsat)

-

1.2

1.5

Vde

Base-Emitter Saturation Voltage
IIc = 1.0 Ade,IB = 2.0 mAde)

VBE(sat)

-

1.85

2.0

Vde

Base-Emitter On Voltage
IIc = 1.0 Ade, VCE = 5.0 Vde)

VBE(on)

-

1.7

2.0

Vde

Ihfel

1.0

3.2

-

-

Ceb

-

2.5

6.0

pF

DYNAMIC CHARACTERISTICS
Small-Signal Current Gain (1)
(lC = 200 mAde, VCE = 5.0 Vde, f

Collector Base Capacitance
IVca = 10 Vde, IE = 0, f

= 100 MHz)

= 1.0 MHz)

(1)Pulse Test: Pulse Width ~ 300 IlS, Duty Cycle S' 2.0%.

Uniwatt darlington transistors can be used in any number of low power applications. such as relay drivers, motor control and as general
purpose amplifiers. As an audio amplifier these devices, when used as a complementary pair, can drive 3.5 watts into a 3.2 ohm speaker using
a 14 volt supply with less than one per cent distortion. Because of the high gain the base drive requirement is as low as 1 mA in this application.
They are also useful as power drivers for high current application such as voltage regulators.

1-940

MPS-U45

FIGURE 1 - DC CURRENT GAIN

300
200

§
?$
z

;;:
to

r--

r--...

Tj - 1250C

I

100

FIGURE 2 - SMALL-5IGNAL CURRENT GAIN

~CIEI. 5.0 Vz

I"'-

;;:

to

~
'"i3

25°C

>-

~
'"i3

~

~

10

::::::::

~

VCE' 5.0 Vdc......
Tj" 250C
1'100MHz

2.0

~

1.0

~

05

""
t

0.2

a

20

'-'

c

5.0

>-

70
50

-55°C

30
0.02

0.1

005

0.5

0.2

1.0

"

\\

O. 1
0.01

20

0.02

FIGURE 3 - "ON" VOLTAGES

c

2::

o

1. 51-

I

f

1

1

,I,

L

YSElrt )@ICIIS'500_

0.2

0.3

1.0

0.5

t:-I-

,.-

e..
>

.s

1. 0

>

1

1

1

o

1

0.03

1.--1-

OVB For VeE

u: -3.0

~

w

8

YI

0.2

01

0.3

0.5

1.0

2.0

-5.0
0.01

V

V V

-4.0

OO

1 1
0.05

V

<3

1 1

- iCElt l@iCn

-2.0

>~

./

VSE@VCE·5.0V

.,;
O. Sf--

-1.0
'-'

.,.-1-

1

to

0.02

0.1

FIGURE 4 - TEMPERATURE COEFFICIENT

~

w

""0
S

0.05

~ .1250~
j

g

0,03

IC, COLLECTOR CURRENT lAMP)

IC, COLLECTOR CURRENT lAMP)

5 I-

",

1jj

7.0
50

2.

III

10

I- r0.02

IC, COLLECTOR CURRENT lAMP)

0,03

0,05

0.1

0.2

0.3

0.5

1.0

IC, COLLECTOR CURRENT lAMP)

FIGURE 5 - DC SAFE OPERATING AREA

2.0

...
r--

ii:

~ 1.0

I"

'\

There are two limitations on the power handling abilitv of f
transistor: junction temperature and second breakdown. Safe

>-

~

'"~
'"o

~

o

~

O. 7

O. 5

0.3

operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not

,'\

__ sroy

I-- - Tj'150oC
O. 2 1 - - - - SONDING WIRE LIMITATION
THERMAL LlMITATIDN@TC=25 0C
'O. 1
2.0

be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T Jlpk) = 150°C; TC is variable

~

I

I
3,0

5.0

depending on conditions. At high case temperatures, thermal limi~
tations will reduce the power that can be handled to values less
than the limitations imposed by second-breakdown.

'\.

SrArDiWIN ilMITATlr
7,0

10

20

30

40

VCE. COLLECTOR·EMITTERVDLTAGE IVOLTS)

1-941

MPS USI
MPS USIA

®

MOTOROLA

III
PNP SILICON ANNULAR TRANSISTORS
PNP SILICON
AUDIO TRANSISTORS

· .. designed for complementary symmetry audio circuits to 5 Watts
output.
•

Excellent Current Gain Linearity - 1.0 mAde to 1.0 Adc

•

Low Collector-Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 1.0 Adc

•

Complements to NPN MPS·UOI and MPS-UOIA

•

Uniwatt Package for Excellent Thermal Properties 1.0 Watt @ T A = 25 0 C

F

MAXIMUM RATINGS
Rating

Symbol

MPS·U51

MPS-U51A

Unit

VCEO

30

40

Vdc

Collector-Base Voltage

VCB

40

50

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current - Continuous

IC

2.0

Adc

Total Power Dissipation @ TA= 2SoC
Derate above 2SoC

PD

1.0
8.0

mW/oC

Total Power Dissipation @ T C - 2SoC
Derate above 2SoC

PD

Collector-Emitter Voltage

Operating and Storage Junction
Temperature Range

TJ.Tstg

Watt

10

Watts

80

mW/oC

-55 to +150

°c

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

A8JC

12.5

°C/W

Thermal Resistance, Junction to Ambient

A8JA

125

°C/W

o

-H-J

N

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
MILLIMETERS
DIM MIN
MAX
A
B

C
0
F
G
H

J
K
L
N
Q

R

INCHES
MIN MAX

9.14
9.53
0.360 0.315
6.60
1.24
0.260 ~2B5
5.41
5.66
0.213 0.223
0.38
0.53
0.015 0.02'
3.18
3.n JL125 0.131
2.54 BSC
0.100 BSe
3.94
4.19
0.155 0.165
0.36
0.41
I 0.016
12.01 12.10
I 0.500
25.02 25.53
~
5.08 8Se
2.38
2.69
I~
0.106
1.14
1.40
0.055

i

CASE 152-02

1-942

MPS-U51,MPS-U51A
ELECTRICAL CHARACTERISTICS ITA' 25 0 C unless otherwIse noted 1
Characteristic

Symbol

Min

Max

30
40

-

40
50

-

5.0

-

-

0.1

-

0.1

-

0.1

jJ.Adc

veE (sat)

0.7

Vde

VSElon)

1.2

Vdc

Unit

OFF CHARACTERISTICS

Collector-EmItter Breakdown Voltage

Vdc

BVCEO

IIc'10mAdc,IB'01

MPS-U51
MPS-U51A

Collector-Base Breakdown Voltage

Vdc

BVCBO

lie' 100 "Adc, IE ' 01

MPS-U51
MPS-U51A

Emitter-Base Breakdown Voltage

BVEBO

-

Vdc

liE' 100 "Adc, IC' 01
Collector Cutoff Current

ICBO

IVcs' 30 Vde, IE ' 01

MPS-U51

IVcs ' 40 Vde, IE ' 01

MPS-U51A

Emitter Cutoff Current

IESO

~Adc

IVSE ' 30 Vde, IC' 01

ON CHARACTERISTICSII)
DC Current Gam

hFE

IIC' 10 mAde, VCE ' 1 0 Vdel

55

(Ie'" 100 mAde, VeE ~ 1.0 Vdc)

60

etc' 1.0 Ade, VCE ' 1 0 Vde)

50

Collector-Emitter Saturation Voltage

IIc' 1.0 Ade, IS' 0.1 Ade)

Base-Emitter On Voltage
IIC' 1.0 Ade, VCE ' 1.0 Vde)
DVNAMIC CHARACTE RISTICS
L;urrent-uain

Bandwidth Product

IT

50

Cob

-

MHz

IIC' 50 mAde, VCE ' 10 Vde, I , 20 MHzl

Output Capacitance

pF

30

IVCS' 10 Vde, IE ' 0, f , 100 kHz)
(1)Pulse Test

Pulse Width ~300 IJ.S, Duty Cvc1e"f2 0%

FIGURE 2 - "ON" VOLTAGES

FIGURE 1 - DC CURRENT GAIN
500

z

300

;;:

1.0

I I
'r--

J

i

~

200

0.6

;:::;; ~E@VCE= 1.0 V

to

,.-

13

~

'"

~

~-

H" J-rt

w

u

'"

-

VBE(satl@lc/IB=lO.-

O.B

to

J.....r-r

II II

J

C-TJL5 C

1~0 vJc

CE =
TJ=250C

"

':;

"""'- .....

100

0

0.4

>

,.,

->
0.2

70

50
10

20

50

100

200

500

VCE(..,)@ICIIB = 10_~

+-H111

o

1000

10

20

IC, COLLECTOR CURRENT (rnA)

30

50

100

200

300

500

1000

IC, COLLECTOR CURRENT (rnA)

FIGURE 3 - DC SAFE OPERATING AREA
2.0

1'.

l"r--

0::
'"

~

There are two limitations on the power handling ability of a tran·
sistor: junction temperature and second breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.

1.0

~ 0.7

w

"g;'" 0.5
"TJ = 150°C
'"'o'"
,"-.
H------ Secondary Breakdown limited

~ o.

The data of Figure 3 is based on TJ(pk) ~
Te is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.

1500C;

- _ ... _ - BondingWireLimited
~--- Thermal Limitations @ TC=250 C

8 o. n--- I
oj

O. 1
2.0

I

I

APt'iC'r"

TO ~VfEp

II
3.0

5.0

10

I MPS-U51

l-

'\.

MPS-~51A

20

30

40

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1-943

MPS·O'52

-

®

MOTOROLA

PNP SILICON ANNULAR TRANSISTOR
... designed for general·purpose ampl ifier and driver applications.

PNPSILICON
AMPLIFIER TRANSISTOR

• Complement to NPN MPS·U02

MAXIMUM RATINGS

Symbol

Value

VCEO

40

Vdc

Cullector-Base Voltage

VCB

60

Vdc

Enulter-Base Voltage

Vde

Rating
Culle(.'tor-Enutter Voltage

Unit

VEB

5.0

Colledor Current - ContUluoUS

IC

1.5

Total Power Dissipation @ TA .. 25 ~C

Po

1.0

Watt

8.0

IlIW/"C

10
80

mW;oC

Derate above 2S- 0,4

\

-VCpI.OV
~7t7' VCPl l0 ~

30
2,0

,\
~

./

D,2

-

~

VCE( ..t) @IC/IB - 10

o2,0

1000 2000

5,0

10

20

50

100

200

500

1000 2000

IC. COLLECTOR CURRENT (rnA)

FIGURE 3 - CDLLECTOR SATURATION REGION

'"
~

- '"

1.0

~ O.8 - VBE(sat @ICilB'10

!j
g

0_

TJ' 25°C

1.2

-

!.550b

0-

g

I

- H-

-

FIGURE 2 - "ON" VOL TAGES
1.4

FIGURE 4 - DC SAFE OPERATING AREA
2,0

1.0
TJ = 25°C

..... 1"-

0.8

to

~

~

0.6

Ic=10mA SOmA

150 mA

5

rnA

2a

0.4

_

0,2

g"''"

Ii

8
~

>

7

1000 rnA

'\.

'"
~

f-

0,05 0,1

0,2

0,5

1.0

2,0

5,0

10

20

50

100 200

0, 12,0

500

500

:r

11 LI

to

VCE = 20 V
TJ·250C
f· 100 MHz

~

_

5 300 ~

'\

;0

FIGURE 6 -CAPACITANCE

t--

-

100

r.......,

~

./

TJ' 250C

Cib

70

w

'"

c

'"<1 100 , /

40

200

~ i--'"

:=c 200

~ 50

I-

......

f.O

u

~ 30

5

to

1"-,

";20

'"
Z

Cob

~ 70

........

'"~

50

I\.

4,0
6,0
8,0 10
20
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 5 - CURRENT-GAIN BANDWIDTH PRODUCT

.i

"-

I-

0

'"
:i

r-...

r-- ---

lB. BASE CURRENT (rnA)

'N

'\.

TJ • 150°C
- - - SONDING WIRE LIMIT
THERMAL L1MIT@TC·25 0C
- - SECONO BREAKDOWN LIMIT

2,0

3,0

5,0

7,0

10

20

30

50

70

100

200

10

0,1

0.2

0,5

1.0

2.0

5.0

10

VR. REVERSE VOLTAGE (VOLTS)

IC. COLLECTOR CURRENT (rnA)

1-945

I' t20

50

100

MPS· U55
MPS U56

®
PNP SILICON ANNULAR
AMPLIFIER TRANSISTORS

MOTOROLA

PNPSILICON
AMPLIFIER TRANSISTORS

· .. designed for general·purpose. high-voltage amplifier and driver
applications.
.• High Collector-Emitter Breakdown Voltage BVCEO = 60 Vdc (Min) @ IC = 1.0 mAdc - MPS-U55
80 Vdc (Min) @ IC = 1.0 mAdc - MPS-U56

= lOW @ TC = 25 0 C

•

High Power Dissipation - PD

•

Complements to NPN MPS-U05 and MPS-U06

E
B

C

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage

Symbol

MPS-U55

I

MPS-U56

Unit

VCEO

60

I

80

Vdc

VCR

60

80

Vdc

4.0
2.0

Vdc

1.0
8.0

Watt
mW/oC

10
80

mW/oC

-55 to +150

°c

Emitter-Base Voltage
Collector Current - Continuous

IC

Total Power Dissipation @ T A = 2SoC

Derate above 25°C
Total Power Dissipation

@

TC "" 25°C

Derate above 2SoC
Operating and Storage Junction
Temperature Range

I

Max

Unit

Thermal Resistance, Junction to Ambient

ReJAll)

125

°C/W

Thermal Resistance, Junction to case

ReJC

12.5

°C/W

0--

l:!.±N

PIN 1 EMITTER
2 BASE
J COLLECTOR
DIM

A

(1) R6JA is measured with the device soldered into a typical printed circuit board.

J

JJ

Watts

STYLE 1
Symbol

:"~LI

I

;r,~, j

Adc

. THERMAL CHARACTERISTICS
Characteristic

P___.r-;=::

MILLIMEtERS
MIN
MAX

9.14
6.60
5.41
0.38

9.53
8
7.24
C
5.66
D
53
F
.18
3.33
G
2.54BSC
H
3.94
4.19
J 0.36
0.41
K 12.07 12.70
l 25.02 25.53
N
5.08BSC
o 2.39 2.S9

R

1.14

1.40

INCHES

MIN

MAX

0.3600.315
0.260 0.285
0.2130.223
0150.021
0.1250.11

o.l00B$C
0.1550.165

0.014

0.016

0.475

0.500

0.985 1.005
0.2008SC
0.094 0.1
0.045 0.055

Collector Connected
to Tab

CASE 152'()2

1-946

-II-J

MPS-U55, MPS-U56

ELECTRICAL CHARACTERISTICS IT A = 25°C unless otherwise noted)

I

I

Ch8l'llC1llriatic

I

Symbol

Min

Typ

Max

60
80

-

-

4.0

-

-

-

-

100
100

80
50

-

160
130
80

-

-

0.22
0.15

0.5

Unit

OFF CHARACTE'RISTICS
Collector-Emitter Breakdown Voltage 11)
(lC = 1.0 mAde,lB = 0)

Vde

BVCEO
MPS-U55
MPS-U56

Emittar-Base Breakdown Voltage
(IE ~ l00I'Ade,lc = 0)

BVEBO

Collector Cutoff Currant
(VCB = 40 Vde, IE ~ 0)
(VCB = 60 Vde, IE = 0)

Vde
nAde

ICBO
MPS·U55
MPS·U56

ON CHARACTERISTICS
DC Currant Gain (1)
(lC = 50 mAde, VCE = 1.0 Vde)
(IC ~ 250 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)

hFE

-

Coliector·Emltter Saturation Voltage( 1)
(lC = 250 mAde, IB = 10 mAde)
(lC = 250 mAde, IB = 25 mAde)

VCE(satl

Base-Emittar On Voltage (1)
(lC = 250 mAde, VCE = 5.0 Vde)

VBE(on)

-

0.78

1.2

Vde

IT

50

100

-

MHz

Cob

-

10

15

pF

Vde

-

SMALL-SIGNAL CHARACTERISTICS
Currant·Galn-Bandwldth Product (1)
(lC = 250 mAde, VCE = 5.0 Vde. f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE

= 0, f =

(1)Pulse Test: Pulse Width

100 kHz)

~300

Iols, Duty Cycle S:2.0%.

FIGURE 1 - DC CURRENT GAIN
300
20 0

FIGURE 2 - "ON" VOLTAGES
0

Jc~ ~ \ OV'o

-+J 1\,i

I

0

TJ=25 0C

" r--.

0

IIIIIII

VBE1~o~
____ . /
....-

•
,

VBE(on)@YCE=50Vdc

4

0
0

2

....-

VCE(sat)@IC"B"10
30
50

-

10

20

50

100

200

0
10

500

20

50

Ie. COLLECTOR CURRENT (rnA)

FIGURE 3 - ACTIVE·REGION SAFE
OPERATING AREA

10

20

50

100

200

500

Ie. COLLECTOR CURRENT (rnA)

FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT
0
200
Q

o

:::

~

~

"",

0
0
0
VCE=50Vdc

0

~il"c
10

veE. COLLECTOR·EMITTER VOLTAGE NOL TSI

Thare are two limitations on tha power handling ability of a
transistor: junction tamperature and second breakdown. Safa
operating area eurves indicata IC - VCE limits of the transistorthet
must be observed for reliable operation; i.a., the transistor must
not be subjected to greater dissipation than the curves indicate.

20

50

100

100

500

Ie. COLLECTOR CURRENT (rnA)

Tha data of Figura 3 is based on T J(pkl = 1500 C; T C is variabla
depanding on conditions. At high case temperatures, thermal
limitations will reduca the power that can be handled to values 1_
than the limitations imposed bV secondlb....kdown.

1-947

II.

MPS • 057

®

MOTOROLA

IIJ
AMPLIFIER TRANSISTOR

PNP SI LICON ANNULAR
AMPLIFIER TRANSISTOR

PNPSILICON

· .. designed for general·purpose, high-voltage amplifier and driver
applications.

•

High Collector-Emitter Breakdown Voltage BVCEO = 100 Vdc (Min) @ IC = 1.0 mAdc

•

High Power Dissipation - Po

•

Complement to NPN MPS-U07

= 10 W @ TC = 250 C

I

MAXIMUM RATINGS
Svmbol

Value

Unit

VeEO

100

Vdc

Collector-Base Voltage

VeB

100

Vdc

Emitter-Base Voltage

VEB
Ie

4.0

Vdc

2.0
1.0
8.0

Adc
mW/oC

Rating
Collector-Emitter Voltage

Collector Current

Continuous

lotal Power Dissipation @. T A - 25°C
Derate above 2SoC

Po

Total Powar Dissipation '@TC = 250C

Po

10
80

Watts
mW/oe

TJ, Tstg

-55 to +150

°c

Derate above 2SoC
Operating and Storage,Junction
Temperature Range

Watt

Svmbol

Max

Unit

Thermal Resistance, Junction to Case

R9JC

12.5

°C/W

Thermal Resistance. Junction to Ambient

R9JA

125

°C/W

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

MILLIMETERS
DIM MIN MAX

INCHES
MIN MAX

9.14
9.53
6.60
7.24
5.41
5.66
0.38
0.53
3.18
.3
2.54 BSC
H
3.94 4.19
J
0.36
0.41
K 12.07 12.70
L 25.02 25.53
N
5.08 BSe
Q
2.39
2.69
R 1.14
1.40

0.360 0.375
0.260 0.285
0.213 0.223
0.015 0.021
0.125 0.131
0.100 ase
0.155 0.165
0.014 0.016
0.475 0.500
0.985 1.005
0.2OO8SC
0.094 0.106
0.045 0.055

A

a

C
0
F
G

THERMAL CHARACTERISTICS
Characteristic

N

CASE 152·02

1-948

MPS-U57

ELECTRICAL CHARACTERISTICS (T A = 250 C unless otherwise noted)

I

I

Characteristic

Symbol

I

Min

Typ

Max

Unit

OFF CHARACTERISTICS
Coliector-Emitter Breakdown Voltage (1)
IIC = 1.0 mAdc,lB = 0)

BVCEO

100

-

-

Vdc

Emitter·Base Breakdown Voltage

BVEBO

4.0

-

-

Vdc

ICBO

-

-

100

nAdc

60
30

140
65
30

(lC = 100/lAdc, IE = 0)
Coliector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ON CHARACTERISTICS (1)

DC Current Gain

-

hFE

IIc = 50 mAde, VCE = 1.0 Vdc)
IIc = 250 mAde, VCE = 1.0 Vdc)
IIc = 500 mAde, VCE = 1.0 Vde)

-

Collector-Emitter Saturation Voltage
IIc = 250 mAde, IB = 10 mAde)
IIc = 250 mAde, IS = 25 mAde)

VCE(satl

Base-Emitter On Voltage

VSE(on)

Vdc

-

0.5

-

0.24
0.15

-

0.78

1.2

Vde

fy

50

100

-

MHz

Cob

-

10

-

II C = 250 mAde, V CE = 5.0 Vdc)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (1)
(lC = 250 mAde, VCE = 5.0 Vde, f = 100 MHz)

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)

15

pF

(1) Pulse Test: Pulse Width.;; 300/ls, Duty Cycle';; 2.0%.

FIGURE 2 - "ON" VOLTAGES

FIGURE 1 - DC CURRENT GAIN
200

z

100

~

7

~

f'..,

1l •0

g

~

~ 0
~ 0

;!

is

\

1\

VeE: 1 OVdc
TJ=250C

0

>
:>

5.070

10

20

50

70

100

200

VBEton)@VeE " S.D Vdc

D.4

o.3
o.2
0
1.0

VCEtsat)@lc/1a=10

'00

2.0

5.0

Ie. COLLECTOR CURRENT (mAl

FIGURE 3 - DC SAFE OPERATING AREA

~

•

O. 1

~ 0.05
0.02

0.0 1
000.
1.0

100

200300500

C"-...

""

TJ=15D oC

- -

decO~d ~r~k~Un

llmltad
BondlngWlraUmlted
TliermallrmltatJolIS@Te '" 25DC

0

Applu:ableToBVCEO

!J

50

FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT

iN.U

10

~ o.
B 0.2
~

20

0

20

'"

10

~

Ie. COLLECTOR CURRENT (mAl

'.0

~

~
f-""

I:t:tr

o. 1

: III

20

11111

v.IE(~tJ @I"A. ~ 101.

7

~

,

0

:,I-+J! 25~.c
,
•

I
2.0

ILl) I) 1
so

10

0
VCE-S.DVdc

1
20

50

tilt'

100

VeE. CO LLECTOR·EMITTER VOLTAGE (VOLTS)

20

50

70 100

200

500

Ie. COLLECTOR CURRENT (mAl

There are two limitations on the power handling ability of a
transistor: junction temperature and second breakdown. Safe

The data of Figure 3 is based on TJ(pk) = 150 0 C; TC is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.

operating area curves indicatelc - VCE limits of the transistor that

must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.

1-949

..

MPS· U60

®

MOTOROLA

III
PNP SILICON ANNULAR TRANSISTOR
PNP SILICON
HIGH VOLTAGE
TRANSISTOR

designed for general-purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance.
•

Complement to NPN Type MPS-U 10

MAXIMUM RATINGS
Svmbol

Value

Unit

VCEO

300

Vdc

Collector-BaH Voltage

VeB

300

Vdc

Emitter-Base Voltage

Rating

COllector-Emitter Voltage

VEB

50

Vdc

Collector Current - Continuous

Ie

500

mAde

Total Power DlssLpatlon@TA",2SoC
Derate above 25°C

Po

10
8.0

Watt
mW/DC

Po

10
80

mWfOc

TJ,Tstg

-55 to +150

°e

Total Power Dlsslpatlon@Tc"'250C
Derate above 2SoC

Operating and Storage Junction
Temperature Range

Watts

THERMAL CHARACTERISTICS

F

Thermal Aeslstance, Junctlon to Case
Thermal Aeslstance, Junction to AmbLent

ELECTRICAL CHARACTERISTICS IT A =

I

250C unless otherwise noted)

Symbol

Characteristic

Moo

M..

Unit

OFF CHARACTEAISTI~
Collector Emitter Breakdown Voltage
(Ie: '" 1 o mAde, IR =01

t2)

Vdc

eVCEO

300

Collector-Base Breakdown Voltage
(Ie =< 100 #lAde, 'E = 01

eVCBO

Emitter-Base Breakdown Voltage
liE'" 10l'Adc,Ic = 01

BVEBO

Vdc

300
Vdc

50

Collector Cutoff Current

/JAde

ICBO

(Vca = 200Vdc, IE =01

0.2

Emitter Cutoff Current
IVSE = 3.0 Vdc. Ie = 0)

j.lAde

lEBO

01

ON CHARACTERISTICS

DC Current Gain (2)

hFE

IIc = 1.0 mAde, VCE = 10 Vdel

25

(Ie = 10 mAde, VCE = 10 Vde)

30
30

flC = 30 mAde, VCE = 10Vde)

Collector-EmitterSaturatlon Voltage

Vdc

VCEtsat)
0.75

lie" 20mAde,Ie = 2.0 mAde)

Base-EmltterSaturation Voltage

0.9

veE (sat)

Vdc

(Ie = 20 mAde, IS = 2.0 mAde)

DYNAMIC CHARACTERISTICS

I

Curtent-Galn-Sandwldth Product (2)
(Ie = 10 mAde, VeE'" 20 Vde, f:: 100MHz)

'T

Collector·Sase Capacitance

Ccb

I

(VCS =20Vde, IE =0, f = 1 OMHz)

MH,

60

pF

8.0

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

MILLIMETERS
DIM MIN MAX
9.14
9.53
A
6.60
B
7.24
C 5.41
5.66
D 0.38
0.53
F
.18
.3
G
2.54 SSC
H 3.94
4.19
J
0.36
0.41
K
12.70
L
25.53
N
SSC
Q
2.39
2.69
R 1.14 1.40

1L360
0.260
0.213
0.015

(1) ROJA is measured with the device soldered into a typical printed circuit board.

CASE 152-02

(21! Pulse Test: Pulse Width .. 300 1"', Duty Cycle .. 2.0%.

1-950

MPS-U60

FIGURE 1 - DC CURRENT GAIN
150

TJ=+125 DC

V6E - \0 v1c

100

III

.......

~+25"C

0

~

0_-55"C

.......

0

""'"I"

N

~::-..

""."" "-

20
15
1.0

2.0

30

70

5.0

10

20

30

50

BO

100

IC, COLLECTOR CURRENT ImAI

FIGURE 2 - CAPACITANCES

FIGURE 3 - CURRENT·GAIN-BANDWIDTH PRODUCT

100
T".";2SQe.
50

~
w

20

r---

z

"
U
f-

r-.

lO

100
80

r-

Tr 25 0 C

r- VCE = 20 Vdc

~

60

'"af-

40

;;:
a

~

;t
;:\ 5.0
oS

3D

\

\

/'

V

I

z

.....

1.0
0.1

-

I"-

2.0

"

'"
f-

Cfb[

0.2

0.5

1.0

20

5.0

10

20

50

100 200

500 1000

~
"'=>
<..>
.t-

20

10
1.0

50

20

VR, REVERSE VOLTAGE IVO LTSI

1.0

2

w

500
300

I

O.B

r-- r-

~
a

---

VB~ @lJCE '= 10 ~

0.6

:<

.s

-~

.....
...... .....

200

f-

z
w

~

100

"''"

50

1' ..

G

'"~
'">

"

f-

~

0.4

>'
0.2

o

1.0

VCE(sa,)@lICIlB

2.0

5.0

LllL10

=10
20

100

50

20

FIGURE 5 -DC SAFE OPERATING AREA

I

TJ' 25"

10

IC, COLLECTOR CURRENT ImAI

FIGURE 4 - "ON" VOLTAGES

;;;

"-

=>

Cob

<..>

i

~

-

50

8

~

100

.....

TJ = 150"C
- - - SECONO BREAKOOWN LlMITEO
20 - BONDING WIRE LIMITED
fHERMALLYLIMITEO@lTC=25 0 C
10

30

5.0
20

30

40

60

BO

100

200

VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

Ie, COLLECTOR CURRENT (rnA)

1-951

300

400

MPS· 095

®

MOTOROLA

IIJ
PNPSILICON
DARLINGTON
TRANSISTOR

PNP SILICON DARLINGTON
AMPLIFIER TRANSISTOR
· .. designed for amplifier and driver applications.
• High DC Current Gain
hFE = 25,000 (Min)
15,000 (Min)

@
@

IC = 200 mAdc
IC = 500 mAdc

• Collector· Emitter Breakdown Voltage BVCES = 40 Vdc (Min) @ IC = 100 !lAdc
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5 Vdc @ IC = 1.0 Adc
• Monolithic Construction for High Reliability
• Complement to NPN MPS-U45

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

: Collector-Emitter Voltage

VCEO O1

40

Vdc

Collector-E",:,itter Voltage

VCES

40

Vdc

Collector-Base Voltage

VCS

50

Vdc

Emitter-Sase Voltage

VES

10

Vdc

Collector Current ·Continuous

IC

2.0

Adc

Total Power Dissipation @ TA - 2SoC

Po

1.0
8.0

mW/oC

10
80

mW/oC

TJ,TsIg

-5510 +150

°c

Derate above 2SoC
Total Power Dissipation @ T C = 25°C

Po

Derate above 2SoC
Operating and Storage Junction

,
F

Watt

Watts

Temperature Range

o

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient

hermal Resistance. Junction to Case

Symbol

Ma.

Unit

ROJA(2)

125

°C/W

M9JC

12.5

°C/W

(1) Due to the monolithic construction of this device, breakdown voltages of both
transistor elements are identical. BVCES is tested in lieu of BVCEO in order to
avoid errors caused by noise pickup. The voltage measured during the BVCES
test is the BVCEO of the output transistor.
(2) R8JA is measured with the device soldered into a typical printed circuit board.

MILLIMETERS

STYLE 1.
PIN 1. EMITTER
2.8ASE
3. COLLECTOR

DIM
A
8
e

0
F
G
H
K
L
N

n

R

MIN

MAX

9.14
9.53
1.24
6.60
5.41
5.66
0.36
0.53
3.1
.33
2.54BSe
3.94
4.19
0.41
0.36
12.01 12.10
26.02 25.53
5.08 BSe
2.
2.69
1.14
1.40

CASE 152·02

1-952

INCHES

MIN

M

0.360 gJI6
0.260 0.285
0.213 0.223
001
O. I
12
.131
0.100BSe
0.155 0.165
0.014 0.016
0.415 0.500
0.965 1.005
0.200BSe
0.094 0.1116
0.045 0.055

MPS-U95

ELECTRICAL CHARACTERISTICS IT A = 25°C unless otherwise noted 1
Characteristic

Max

Unit

-

-

Vde

50

-

-

Vde

BVEBO

10

-

-

Vde

ICBO

-

-

100

nAdc

lEBO

-

-

100

nAde

IIc = 200 mAde, VCE = 5.0 Vde)

25,000

43,000

150,000

= 500 mAde, VCE = 5.0 Vde)
= 1.0 Ade, VCE = 5.0 Vdcl

15,000

41,000

4,000

35,000

-

Symbol

Min

BVCES

40

BVCBO

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage
IIC

= 100 "Ade,

VBE

= 01

COllector-Base Breakdown Voltage
IIc

= 100 "Ade, IE = 01

Emitter-Base Breakdown Voltage

liE

= 10 "Ade, IC = 01

Collector Cutoff Current

IVCB

= 30 Vde, IE = 01

Emitter Cutoff Current
(VEB

= 8.0 Vde,

IC

= 01

ON CHARACTERISTlCS(l)

DC Current Gain
IIc
IIc

-

hFE

Collector-Emitter Saturation Voltage
IIc = 1.0 Ade, 18 = 2.0 mAde)

VCE(sat)

-

1.0

1.5

Vde

Base-Emitter Saturation Voltage

VSElsatl

-

1.85

2.0

Vde

VSElon)

-

1.7

2.0

Vde

lhfel

0.5

1.6

-

-

Ceb

-

2.5

12

pF

IIc

= 1.0 Ade,

18

= 2.0 mAde)

Base-Emitter On Voltage
IIc

= 1.0 Ade,

VCE

= 5.0 Vdel

DYNAMIC CHARACTERISTICS

Small-Slgnal Current Gain (1)
IIc

= 200

mAde, VCE

= 5.0 Vde, f = 100 MHzl

Collector Base Capacitance
IVCS

= 10 Vde,

IE

= 0, f = 1.0 MHzl

(1)Pulse Test' Pulse Width ~300 J.Ls, Duty Cycle S 20%.

Unlwatt darlington transistors can be used in any number of low power applications. such as relay drivers, motor control and as general
purpose amplifiers. As an audio amplifier these devices, when used as a complementary pair, can drive 3.5 watts into a 3.2 ohm speaker using
a 14 volt supply with less than one per cent distortion. Because of the high gain the base drive requirement IS as low as , mA in this application.
They are also useful as power drivers for high current application such as voltage regulators.

1-953

MPS-U95

II]

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - SMALL-8IGNAL CURRENT GAIN

10

150

===:VCE ' 5.0 Vdc
z
TJ'25 DC
:;;: 5.0 f, 100 MHz
'"

Vrj-°V

~100 I-TJ 125 DC
~

z

:;;:

'"l-Z

...
Q

a'"

"\.

\.

SO

-ri

=

~

'"

ffi

70

13
30

f-rr

-

20

15
0.02

~ 1.0

\

'"

\.

:i.
ill

~

0.2

0.1

0.2

O. 1
0.01

2.0

1.0

0.5

0.5

!.

\

"""\

0.05

2.0

-'

,\

I

W
~

===

I-

0.02

0.05

'"~...
'"~"
'">>-

TJ,25DC

G

~

G

II
VCE(sat)@ICIIB'500

0.5

II
II0.1

o
0.05

./

~ -O.S

$ -1.6

VBE @~C)E' 5.~ V
1.0

/

~

t:::

1.5 I- VBE(sotl@ICIIB-500

0.02

---;

+0.8

2.0

~

1.0

0.5

0.2

FIGURE 4 - TEMPERATURE COEFFICIENT

FIGURE 3 - "ON" VOLTAGES

2.5

0.1

IC. COLLECTOR CURRENT (AMP)

IC.COLLECTOR CURRENT (AMP)

~ -2.4
=>

~

ffi

~I- -4.0

0.5

2.0

1.0

v

-3.2

~

0.2

/
./

8

,/

-

....

OVC FO R VCE!"t)

-4.8
0.02

0.05

l.---'"
~VBFORVBE
) I

I
0.1

0.2

0.5

1.0

2.0

IC. COLLECTOR CURRENT (AMP)

IC. COLLECTOR CURRENT (AMP)

FIGURE 5 - DC SAFE OPERATING AREA

,

2.0

'\.

~

'\

r--

1i:

1.0

There are two limitations on the power handling ability of a

~ 0.7
'"

'"~
'"'"
I~
8

~

transistor: junction temperature and second breakdown. Safe
operating areB curvas indicate Ie-VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not

0.5

0.3

."\

be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J!pk) = 15o"C; T C is variable
depending on conditions. At high case temperatures, thermal limi·
tations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.

:~

r-

I-- TJ'150DC
0.2 1 - - - - BONDING WIRE LIMITATION
THERMAL L1MITATION@TC'25 DC

"'

----

1---

0.1
2.0

I I
3.0

SiCOY TAiDfiN ilMITATIiN
5.0

7.0

10

20

30

40

VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

1-954

®

MOTOROLA

NPN

PNP

TIP29
TIP29A
TIP29B
TIP29C

TIP30
TIP30A
TIP30B
TIP30C

1 AMPERE

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

POWER TRANSISTORS
COMPLEMENTARY SILICON
40·60-80·100 VOLTS
30 WATTS

... designed for use in general purpose amplifier and switching
applications. Compact TO·220 AB package. T0-66 leadform also
available.

MAXIMUM RATINGS
Ratinll
Collector-Emitter Voltage

Symbol

TlP29
TlP30

VCEO

40

Collector-Base Voltage
Eminer-8Me Voltage
Collector Current Continuous
Peak
Peak
ease Current

..
...
...
.....

VCS
VES
IC
IS

Po

Total Power OISSlpatlon
@TC=2SoC

Derate above 2SoC
Total Power DISSipation
@TA=2S oc
Derate above 2S0C

Po

Unclamped Inductive Load
Energy (See Note 31

Operating and Storage Junction

40

I

TlP29A
TIP3DA

1

Temperature Range

TIP29B
TIP30B

80

60

so

1

I
1

TIP29C
TIP30C

'00
'00

5.0
1.0
3.0
0.4

...
.

.

..
..

30
0.24
2.0
0.016

..
.

32

.

TJ. Tstg

I

60

-65 to +150

Unit

Vd.
Vd.
Vd.
Ado

Ad.
Watts

WIDe
Watts
WIDe
mJ

°c

THERMAL CHARACTERISTICS

J;f

Ch.racterlttic

1-

Thermal Resistance, Junction to Case
Thermal Resistance. Junction to Ambient

ELECTRICAL CHARACTERISTICS

J SECT A·A

(Tc =

2SDC unleS$ otherwise noted)

I

Characteristic
OFF CHARACTERISTICS

Collector·Emltter Sustaining Voltage (1)
IIC = 30 mAde, IS '" 01

Collector Cutoff Current
(VCE ,. 30 Vde, IS '" OJ
(Vce = 60 Vde, IS = 0)
Collector Cutoff Current
(VCE =40 Vde, VES =- 01
(VCE· 60 Vde, VES = 0)
(VeE = 80 Vde. VEB = 01
(VCE" 100 Vrk. VEB = 01
Emitter Cutoff Current
(Vse = 5.0 Vdc, Ie = 01
ON CHARACTERISTICS (11

TIP29, TIP30
TlP29A, TlP30A
TIP29S, TlP30S
TIP29C, TlP30C

Min
40
60
80
100

Ma.

DIM
A
J'Ade

ICES

200
200
200
200
1.0

lEBO

B
C

0

mAde

F
G
H

J
K

l
N

hFE

40
'5
VCElsat>

Q

15
0.1

Vdc

R
S

T
1.3

VBE(on)

Vdc

U
V

Z

Current Geln - Bandwidth Product (2)
IIc" 200 mAde. VCE '" 10 Vdc, ftest " 1 MHzl
Small·Signal Current Gain
lie" 0.2 Adc, VCE = 10 Vdc, f = 1 kHz I
~ 300~,

STYLE I
PIN 1 BASE
2. COLLECTOR
3. EMITTER
4 COLLECTOR

mAde

0.3
0.3

TIP29. TIP30
TlP29A, TIP30A
TlP29S, TIP30B
TlP29C, TIP30C

Bale-Emitter On Voltage
IIC" 1.0 Adc, VeE" 4.0 Vdc)
DYNAMIC CHARACTERISTICS

(3) This rating based on testing with

Unit
Vd.

ICED
TlP29, TlP29A, TlP30, TlP30A
TlP29S. TlP29C. TlP30B, TIP30C

DC Current Gain
(Ie'" 0.2 Ade, VCE" 4.0 Vdcl
(lc = 1.0 Adc. VCE =4.0 Vde)
Collector-Emitter Saturation Voltage
(Ie .. 1.0 Adc, IS .. 126 mAde)

UI Pul.. Test: Pulse Width
(2)fT .. lhf. l • 'telt

Symbol
VCEOlsusl

fT

3.0

hf.

20

MH,

Duty Cycle ~ 2.0%.

Lc '" 20 mH, RBe"

100 n, Vee" 10 V ,Ie'" 1.8 A, P.A.F." 10 Hz.

1-955

MILLIMETERS
INC
MIN
MIN
MAX
1460 1575 0575
965 1019 0380
406
4.81 0.160
064 0.89 0025
361
373 0.142
141
2.67 0095
179
393 0110
0.36
056 0014
1170 1417 0500
114
139 0.045
483
533 0190
1.54 304 0.100
104 2.79 0.080
1.14
1.39 0.045
5.97
8.48 0.235
0.00
1.17 0.000
1.14
- 0.045
2.03
CASE 221A-02
T0-220AB

WAX
610
405
190
035
147
105
155
1

0.055
0.255
0.050

-

0.080

TIP29, TIP29A, TIP29B, TIP29C, NPN, TIP30, TIP30A, TIP30B, TIP3OC, PNP

FIGURE 1 - DC CURRENT GAIN

FIGURE 2 - TURN-OFF TIME

3. 0

500
VCE~20V

t--,

~t:::r=

J

55°C

~

;:

"

0

""

0
70
50
003

005 007 01
0.3
05 07 10
IC, COLLECTOR CURRENT (AMPI

O. 7:5"".5

o. 3

VCC

0.03
0.03

3.0

11

RB

--I

+11 V

13

I

I

t1

~7.0

~ 03

~
;:

ns

100~~~5~~1&

12

I-

3.0

I,@ VCC ~ 30 V

1'0;;; -

~

tr@VCC=10V

o. 1

-4.0 V

0.0 7
0.0 5

I

TURN·OFF PULSE

20

IcilB ~ 10 r--TJ ~ 25°C

O. 7
05

Cjd «Ceb

f-

:
::
Vrn-i---I-T-

I
--;

0.05 0.,Dl 0.1
0.2 0.3
0.5 07 1.0
IC, COLLECTOR CURRENT (AMP)

FIGURE 4 - TURN-ON TIME

I

APPROX

~ 10 V

1. 0

VIn o--'lM~-1~-l

=

.1

RC

t- - - - -

1_
_

0.0 7
005

TURN· ON PULSE

f..-

-if ~IVCC

10

s -118 tf

TJ - 25°C

If@Vcc-30V

2. 0

A
+11 VP P R o n

VEB(Offl--l

t s' = t

o. 2

FIGURE 3 - SWITCHING TIME EQUIVALENT CIRCUIT

VIn 0

Ic/IB~

-..!(

11 L1

1. 0

r--

25°C
0

1~1~1~2

J I""t-fo.+.
"

,0--

3001- t-:iJI,Jolc

0.03
0.0 2
0.03

OUTY CYCLE ~ 2.0%
APPROX -90 V

RB and RC VARIEO TO OBTAIN
OESIRED CURRENT LEVELS.

Id@VEB(ofJi

~

20V

"1i---

I IIIIII

0.050.07 0.1
03
0.5 07 10
IC, COLLECTOR CURRENT (AMPI

-

30

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
0

=

TJ ~ 150°C

- -- "
"j.J

0

There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.

Safe operating area curves indicate IC·VCE operation; i.e., the
transistor must not be subjected to greater dissipation than the

1m.

de ' \

0

SECONO BREAKOOWN LIMITED
------ THERMALL Y LIMITEO @TC ~ 25°C

=R:
o. 1

-

BONDING WIRE LIMIT

.

I IAPPLY
I I BELOW
III
CURVES

Sm.

for duty cycles to 10% provided TJ(pk) .. 150°C. At high case
temper~tures. thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.

:~TlP2930rTIP 29A 30A r-r--

TIP 29B: 30B
TIP29C,30C
4.0
40
10
20
VCE' COLLECTOR EMITTER VOLTAGE, (VOLTS)
RATIEO ,CEIO I I I II

1.0

cu rves indicate.
The data of Figure 5 is based on TJ!pk) = 150°C; TC is variable
depending on conditions. Second breakdown pulse limIts are valid

100

1-956

NPN

®

TIP31
TIP31A
TIP318
TIP31C

MOTOROLA

POWER TRANSISTORS
COMPLEMENTARY SILICON

designed for use in general purpose amplifier and switching
applications.

•

•
•
•

TIP32
TIP32A
TIP328
TIP32C

3 AMPERE

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

•

PNP

40-60-80·100 VOLTS
40 WATTS

Collector· Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector· Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - TIP31, TIP 32
= 60 Vdc (Min) - TIP31A, TlP32A
= 80 Vdc (Min) - TIP31B, TIP32B
= 100 Vdc (Min) - TIP31C, TlP32C
High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO·220 AB Package
TO·66 Leadform Also Available

*MAXIMUM RATINGS
Symbol

TIP31
TIP32

TlP31A
TlP32A

TIP31B
TIP32B

TIP31C
TIP32C

Unit

VCEO

40

60

80

100

Vdc

Collector-Base Voltage

Ve8

40

60

80

100

Vdc

Emitter-Base Voltage

VES

Rating
Collector-Emitter Voltage

Collector Current - Continuous

Ie

Peak

eass Current

IS

Total Power Dissipation
@Te=250e
Derate above 2SoC

Po

Total Power Dissipation
@TA=250e
Derate above 2SoC

Po

Unclamped Inductive

E

Load Energy (1)
Operating and Storage Junction TJ,Tstg
Temperature Range

.

.
.,

-

5.0

Vdc

3.0
5.0

Adc

1.0

Adc

40
0.32

Watts
w/oe
Watts
wfOe
mJ

2.0
0.D16
32
-65 to +150

-

°e

THERMAL CHARACTERISTICS

,I

[l

di~

-IR
i-J

o-li-

STYLE 1:
PIN 1. BASE
2. COLLECTOR
3 EMmER
4. ~!I!CTQR

N

DIM
A
Symbol

Max

Unit

B

Thermal Resistance, Junction to Case

ReJC

3.125

°elw

C
0

Thermal Resistance, Junction to Ambient

ReJA

62.5

°elw

Characteristic

H

(1) Ie = 1.8 A, L = 20 mH, P.R.F. - 10 Hz, Vee = 10 V, RBE = 100.n.

F

G
H

J

K

L
N
Q

R
S

T
U
V

Z

0
3.
2
279
0.36
1270
1.14
483
2.54
2.04
1.14
5.97
0.00
1.14

3
0
14
139
5.33
3.04
2.79
139
B.48
1.27
2.03

INCHES
MIN
MAX
0575 0.620
0380 0.405
0160 0190
0025 0035
0142 0147
0095 0105
0110 0155
0014 0022
0500 0562
0045 0055
0.190 0210
0.100 0120
0.080 0.110
0.045 0.055
0.235 0.255
0.000 0.050
0.045
O.OBo

CASE 221A.Q2
Tc)'220AB

1-957

G

III

TlP31, TIP31A, TIP31B, TIP31C, NPN, TIP32, TIP32A, TIP32B, TIP32C, PNP

ELECTRICAL CHARACTERISTICS ITC = 26°C unle.s otherwise noted)

I

OJ

I

Characteristic

Symbol

Min

Max

Unit

40

Vd.

80
100

-

-

0.3
0.3

-

200
200
200
200

OFF CHARACTERISTICS
TI P31, TI P32
TIP31A, TlP32A
TIP31B, TIP32B
TIP31C, TIP32C

Colle.tor·Emitter Sustaining Voltage II)
IIc = 30 mAd., 18 = 0)

Collector Cutoff Current
IVCE = 30 Vd., IB = 0)
IVCE = 60 Vd., IB = 0)

60

mAd.

ICEO
TIP31, TIP31A, TIP32, TlP32A
TIP31B, TIP31C, TIP32B, TIP32C

Collector Cutoff Current
IV CE = 40 Vd., VE8 = 0)
IVCE = 60 Vd., VEB = 0)
IVCE = 80 Vd., VEB = 0)
IVCE 100 Vd., VEB = 0)
Emitter Cutoff Current
IV BE 5.0 Vde, IC 0)
ON CHARACTERISTICS II)

/lAd.

ICES
TIP31, TIP32
TlP31 A, TIP32A
TlP318, TIP32B
TlP31C, TIP32C

=
=

VCEOlsus)

-

-

1.0

lEBO

=

DC Current Gain

mAde

-

hFE

IIC = 1.0 Ade, VCE = 4.0 Vde)
IIc = 3.0 Ade, VCE = 4.0 Vde)

25
10

Collector-Emitter Saturation Voltage

VCElsat)

50
1.2

Vde

IIC = 3.0 Ade, IB = 375 mAde)

Base-Emitter On Voltage

VBElon)

-

1.8

Vde

IT

3.0

-

MHz

Ihlel

20

-

-

IIC = 3.0 Ade, VCE = 4.0 Vde)
OYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
IIC = 500 mAde, VCE = 10 Vde, I test

= 1 MHz)

Small-Signal Current Gain
IIc = 0.5 Ade, VCE

= 10 Vde, I

= 1 kHz)

II) Pulse Test: Pulse Width";; 300 Ils, Duty Cycle";; 2.0%.
(2) IT= Ihfel.ftest
FIGURE 1 - POWER aERATING
TC TA
40 4. 0

"

~ 30 3.0

.~TC

~
~

~

20 2.0

........

gj
C

~

.......

" "'-

............ ......

oc

'"~

"'- "-

10 1. 0

....................

~.

.

o

0

o

20

40

BO
100
60
T, TEMPERATURE lOCI

120

FIGURE 2 - SWITCHING TIME EQUIVALENT CIRCUIT

.............

~ lBO

140

FIGURE 3- TURN·ON TIME
2.0

TURN·ON PULSE
APPRO
A X VCC
+11 V
I

VIM 0

VEBloff)---1

t- - - - -

I--

VIM Q--'lM-....--1

t1

I

i

Cjd «Ceb

I

"''"i=

t1 <;7.0 ns

:
: : 100- 003
>-

ffi

0.02 .-"

~

~ 00 1""-

>-

-:

0.2

~
~ o. 1
:i 007 005

011

o ~ 0.5

5

001

;;;...- -~

0.1

foot-::::

n

Plp'l

tSUl
-r-~~

V

r-

I

ZeJCIII ~ ,III R'JC
ROJC ~ 3.125' crw Max
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJlpkI- TC ~ Pip') ZOJCIt)

DUTY CYCLE. 0 ~ !J112
SlrGi E IILlI!

002

005

11111

01

10

05

02

10
t,

50

I L

10

I I L I IIII
50

20

I I

100

I I I III

200

500

1.0 ,

TIME (ms)

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
0
0

.

~

...... :l.ms

......

0

1- r--

1 Oms'

50

I\.

"-

TlP3IC, TIC32C
20

D1

10

transistor. average junction temperature and second breakdown .
Safe operating area curves mdlcate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater diSSipation than the curves indicate .
The data of FIgure 5 IS based on T J(pk) = 150°C; T C is variable
dependmg on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pk) ..; 150°C. T Jlpk) may be
calculated from the data in Figure 4. At high case temperatures.
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

"- I\. I\..
.... "-

SECONDARY BREAKOOWN
LIMITED @TJ' 150'C
Or-I=THERMAL L1MIT@TC ~ 25'C
(SINGLE PULSEI--=-t--BONplNG WIRE LIMIT
1--!IP31, TIP32I- CURVES APPLY
TIP31A, TlP32A
2f-- BELOW RATED VCEO
TIP31B, TIB31B
I ' I I I

~
sf;;; ~

There are two limitations on the power handling ability of a

DO",

50

100

VCE, COLLECTOR·EMITTER VOLTAGE IVOL TS)

FIGURE 6 - TURN-OFF TIME
3.0
2. Or1.

°FS

O. 7

o. 5
~
w

'"
;::

0, 3

J I'"H-III
IIIII

FIGURE 7 - CAPACITANCE

1~1~1~2

~

-If@Vce- 3OV

Ic/1B~10

t s'''' t

TJ

300
1_
_

200

s -1I8tf

~~~

~

w

u

z
>- 100
G

-If ~Ivcc- 10 V

T)+J50~ I~:::::

=

25°C

"

Ceb

::

o. 2

;5 70

o. I

50

0.07
0.05
0.03
0.03

r--...

0.05 0.07 0,1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT lAMP)

2.0

3,0

1-959

30
0.1

Ccb

I
0.2 0,3

2.0 3.0 5,0
0.5
1.0
VR, REVERSE VOLTAGE (VOLTS)

10

20 3040

TIP31, TIP31A, TIP31B, TIP31C, NPN, TIP32, TIP32A, TlP32B, TIP32C, PNP

FIGURE 9 - COLLECTOR SATURATION REGION

FIGURE 8 - DC CURRENT GAIN

III

~ 2. 0

500
30ot-- -VIJolc

-r--

15°C

co 100

§ 7~t~

~

t-.

z

;j'

=
2

"~

VCP 1.0V

TJ·250C

1. 6

~

":::t--

">
'"

-55°C

IC ·0.3A

2

3.0A

\

1=

5

~

~.

\

~ O. B
=
~

lOb.

30

~

10

>
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC. COLLECTOR CURRENT (AMP)

0
1.0

30

~

\

0, 4

"

~.

7. 0
5.0
0.03

1.0A

w

2.0

I'
5.0

10

-

20

50

100

500

200

1000

lB. CASE CURRENT (rnA)

FIGURE 11 - TEMPERATURE COEFFICIENTS
+2. 5

~

1.2 H+t+tt-t--I-H+l-tH'l---t-H-+1-t+It--t-1

.§. +1. 5
~
~ +1. 0

v

~ 1.0H+++H+--l--H-H-I+1I+--+--H-+1-++H-./_H

~

i

P'

~ ~V~B~E~(~~t)~@~IC~I~IB~.~10::~~~~~~~~~===t:j
--+--+-++++t+t---+--.I
VBE @ VCE -1.0 V

0

1.0

7

2.0 3.0

~-

OVB FOR VBE

';.- -2. 0

-2. 5
II
0.003 0.005 0.01

,/

-

~ -1. 5
<::::.

0.2 0.3 0.5
0.020.030.05
0.1
IC. COLLECTOR CURRENT (AMPS)

0.01

+0. 5

~ -1. 0

i

0.0030.005

ffi
8

I-

Jl LlIII
I
VCE(~t) @ICIIB· O+-+++H-++---+++++±I~./"'---+-I
I

1/

§ -0. 5

:> 0.4 H+t-H-I4--+-H+-I-H-fl---.f-H-+1+1-I+--++I

o I 111111

/

t tt

w

0.&

0.2

II

'OVC FOR VCE(sat)

<3

;;; O.B H+t+tt-t--_I-I.H+l-tHf+---+-i...:--+='-'IsI'I'FI+---+-i

~>

'APPLIES FOR IcllB <;hFEI2
TJ' -650C TO +150 oC

+2.0

I

0.2 0.3 0.5
0.02
0.05 0.1
IC. COLLECTOR CURRENT (AMP)

1.0

2.0 3.0

FIGURE 13 - EFFECTS OF BASE·EMITTER RESISTANCE

FIGURE 12 - COLLECTOR CUT·OFF REGION

~ 10 7

103
~VCE

'"

/

-30V

......

8

w

2

~ 106

~

'--TJ - 150°C
1>--"

~
~

01== o=100 oC

1~ I=REVERSE

FORWARD=

I===!:

-0.1

+0.1

+0.2

VCE

.......

-.;;;:
.......

(TYPICAL IC~S VALUES
OBTAINED FROM FIGURE 12)

-'

30 V

IC·l0xICES

I--- IC=2xICES

~

'"

>-

ICES
-0.2

-

~ 10 3

F= F250C
-0.3

104

IC~ICES

!

/

10-3
·0.4

I

~= 105

/

...... ........ ......
......
I ........

~

+0.3

+0.4

+0.5 +0.&

~

VBE. BASE·EMITTER VOLTAGE (VOLTS)

1-960

102

20

40

60
100
120
80
TJ. JUNCTION TEMPERATURE (OC)

1.40

160

®

NPN
TIP33
TIP33A
TIP33B
TIP33C

MOTOROLA

PNP
TIP34
TIP34A
TIP34B
TIP34C

III
COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS

10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. for general-purpose power amplifier a nd switching applications.
•

40-100 VOLTS
80 WATTS

lOA Collector Current

• Low Leakage Current - ICED = 0.7 rnA @ 30 and 60 V
hFE = 40 Typ @ 3.0 A

• Excellent dc Gain -

hfe = 3.0 min @ IC =

• High Current Gain Bandwidth Product 0.5 A, f = 1.0 MHz

MAXIMUM RATINGS
Symbol

TIP33
TIP34

TIP33A
TIP34A

T1P33B
TIP34B

TIP33C
TIP34C

VeEO

40V

60V

80V

100V

Vdc

Collector-Base Voltage

Vee

40V

60V

80V

l00V

Vdc

Emitter-Base Voltage

VEe

5.0

Vdc

Ie

10
15

Adc

Rating
Collector-Emitter Voltage

Collector Current

Continuous

Peakll)
Base Current

Cont;nous

Ie

3.0

Adc

Po

80

Watts

0.64

W/oC

TJ,Tstg

-65 to +150

'e

Total Power Dissipation
@Te=25'e

Derate above 25°C
Operating and Storage Junction
Temperature Range

Unit

THERMAL CHARACTERISTICS
Ch.ract8ri.~C

Thermal Resistance, Junction to Case

K

Junction-To-Free-Alr Thermal Resistance

--~
--L:::J 1-0

(1) Pulse Test. Pulse Width = 10 ms, Duty Cycle :S;;;1 0%.

G

STYLE 1
1. BASE
2. COLLECTOR
3. EMITTER
4 COLLECTOR

FIGURE 1 - DC CURRENT GAIN

500

z
:;;:

'"

100

::>

50

i

'-'

-

'-'
co

...
.It

::.

20

MilliMETERS
DIM MIN MAX
A 20.32 21.08
B 15.49 15.96
5.0B
C 4.19
1.65
D 1.02
1.65
E 1.35
G 5.21
5.72
H
2.41
3.20
0.64
I
0.38
K 12.70 15.49
L 15.88 16.51
N 12.19 12.70
Q
4.04 4.22

VCE = 4.0 V
TJ = 25'C

200

-

r--.

--NPN
--PNP

-..

10
5.0
0.1

1.0

10

Ie. COLLECTOR CURRENT (AI

1-961

INCHES
MIN MAX
0.800 0.830
0.610 0.626
0.165 0.200
0.040 0.065
0.053 0.065
0.205 0.225
0.095 0.126
0.015 0.025
0.500 0.610
0.625 0.650
0.4BO 0.500
0.159 0.166

CASE 340-01
TO-21BAC

TIP33, TIP33A, TIP33B, TIP33C, TIP34, TIP34A, TIP34B, TIP34C

III

I

ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)

I

Characteristic

Svmbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)
(lc ; 30 mA. IB ; 0)

Vdc

BVCEO
TIP33, TIP34
TIP33A. TIP34A
TIP33B, TIP34B
TIP33C, TIP34C

-

40
60
80
100

Collector-Emitter Cutoff Current
(VCE; 30 V, IB; 0)
TIP33, TIP33A, TlP34, TlP34A
(VCE; 60 V, IB; 0)
TlP33B, TlP33C, TlP34B, TIP34C

ICEO

Collector-Emitter Cutoff Current
(VCE; Rated VCEO, VEB; 0)

ICES

-

Emitter-Base Cutoff Current
(VEB ; 5.0 V, IC; 0)

lEBO

-

mA

-

0.7
0.7
0.4

mA

-

1.0

mA

40
20

100

-

1.0
4.0

-

-

1.6
3.0

ON CHARACTERISTICS (1)
DC Current Gain
(IC; 1.0 A, VCE; 4.0 V)
(IC; 3.0 A, VCE; 4.0 V)

hFE

Collector-Emitter Saturation Voltage
(IC; 3.0 A, IB; 0.3 A)
(lC ; lOA, IB; 2.5 A)

VCE(sat)

Base-Emitter On Voltage
(IC; 3.0 A, VCE; 4.0 V)
(IC; 10 A, VCE; 4.0 V)

VBE(on)

Vdc

Vdc

DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lC; 0.5 A, VCE; 10 V, I ; 1.0 kHz)

hfe

20

-

Current-Gain-Bandwidth Product (2)
(IC; 0.5 A, VCE; 10 V, I ; 1.0 MHz)

IT

3.0

-

(1) Pulse Test. Pulse Width = 300 ~s, Duty Cycle

MHz

~2.0%.

(21fT = [hfel' f test
FIGURE 2 -

-

.
MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

FIGURE 3 -

MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA

,

20

L; 2'00 I'H'
IC/IS;;' 5.0
VBE(otl) ; 0 to 5.0 V _
TC; 100°C

-

;;;-

~

~

!Z

~

15
10
50

~ 3.0

t3 2.0

Secondary Breakdown limit
-- - Bonding Wire limit
- ---Thermal Limit

de

-

TIP33
TlP34

,

10 ms

~

TIP33A
TlP34A
TC; 25°C
TIP33B
~O. 5===
TIP34B
0.2
TIP33C
TIP34C
O. 1
2.0 3.0
5.0 7.0 10
20 30
50 70
1.0
VCE, COLLECTOR-EMmER VOLTAGE (VOLTS)
~ 1.0

"-

3001"

1.0m~

TIP3~_

'"

TIP~4

100

o
o

"'"

TlP33~""""
TIP3jA

TIP33~ .....

TIP33~

TlP3jS

TIP3jC

60
80
20
40
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

_

100

FORWARD BIAS

REVERSE BIAS

The Forward Bias Safe Operating Area represents
the voltage and current conditions these devices can
withstand during forward bias. The data is based on Te;
25°e; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10%,
and must be derated thermally for Te > 25°e.

The Reverse Bias Safe Operating Area represents
the voltage and currentcondilions these devices can withstand during reverse biased turn-off. This rating isverified
under clamped conditions so the device is never subjected
to an avalanche mode.

1-962

®

NPN
TIP3S
TIP3SA
TIP3SB
TIP3SC

MOTOROLA

PNP
TIP36
TIP36A
TIP36B
TIP36C

III
COMPLEMENTARY SILICON
HIGH-POWER TRANSISTORS

25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. for general-purpose power amplifier and switching applications.
•

25 A Collector Current

•

Low Leakage Current -

•

Excellent dc Gain -

•

High Current Gain Bandwidth Product 1.0 A, f = 1.0 MHz

40-100 VOLTS
125 WATTS

ICEO = 1.0 rnA @ 30 and 60 V

hFE = 40 Typ @ 15 A
(hfe = 3.0 min @ IC =

MAXIMUM RATINGS
Rating

Symbol

TIP35
TIP36

TIP35A
TIP36A

TIP35B
TIP36B

TIP35C
TIP36C

Unit

60V

BOV

lOOV

Vdc

60V

BOV

l00V

VCEO

40V

Collector-Base Voltage

Vea

40V

Emitter-Base Voltage

VEa

50

Vdc

Ie

25
40

Adc

Collector-Emitter Voltage

Collector Current
Base Current

Continuous
Peak (1)

Contrnous

Total Power DISSipation

Vdc

la

50

Adc

PD

125

Watts

10

W/oC

TJ,Tstg

-65 to +150

°e

ESB

90

mJ

@Te=25 o e

Derate above 25°C
Operating and Storage Junction
Temperature Range
Unclamped Inductive Load

THERMAL CHARACTERISTICS
Characteristic
I
I Thermal ReSIstance. Junction to Case
I Junctlon-To-Free-A.r Thermal ReSistance
(1) Pulse Test Pulse Width = 10 ms, Dutv Cvcle

~1

Svmbol

Ma.

Unit

RBJe

10

°C/W

RBJA

357

°C/W

0%

STYlE 1,
1.8ASE

FIGURE 1 - POWER DERATING
125

f'..

;;; 100

li
~
'"
0

~
iii
c
'"
~
~

.P

75

50

25

:"1""'-

~

""'-

""'-

-'"

""'-

1"'-

a

a

25

2. COLLECTOR
3. EMITTER

4. COLLECTOR

125
50
75
100
TC, CASE TEMPERATURE 1°C}

""'150
-

MIlliMETERS
DIM MIN MAX
A 20.32 21.08
8 15.49 15.90
4.19
5.08
C
1.55
0
1.02
1.65
E
1.35
G
5.21
5.72
H 2.41
3.20
0.38
0.64
J
K
12.70 15.49
l
15.88 15.51
N 12.19 12.70
Q
4.04 4.22

INCHES
MIN MAX
0.800 0.830
0.510 0.525
0.155 0.200
0.040 0.055
0.053 0.055
0.205 0.225
0.095 0.125
0.015 0.025
0.500 0.510
0.525 0.650
0.480 0.500
0.159 0.166

175

CASE 340-01
TO-21BAC

1-963

TIP3f). TIP35A. TIP35B. TIP35C.NPN. TIP36. TIP36A. TIP36B. TIP36C.PNP

III

I

ELECTRICAL CHARACTERISTICS (Te = 25°e unless otherwIse noted)

I

Characteristic

Min

Symbol

Unit

Max

OFF CHARACTERISTICS
Coliector~Emitter

Sustaining Voltage (1)
(Ie = 30 mA, IB = 0)

Vdc

BVeEO

-

40

TIP35, TIP36
TIP35A, TIP36A
TIP35B, TlP36B
TIP35e, TlP36e

60

BO
100

Collector-Emitter Cutoff Current
TIP35, TIP35A, TIP36, TIP36A
(VeE = 30 V, IB = 0)
TIP35B, TIP35e, TIP36B, TlP36e
(VeE = 60 V, IB = 0)

leEO

Collector-Emitter Cutoff Current
(VeE = Rated VeEO, VEB = 0)
Emitter-Base Cutoff Current
(VEB = 5.0 V, Ie = 0)·

mA

leES

-

0.7

mA

lEBO

-

1.0

mA

25
15

-

10
1.0

ON CHARACTERISTICS (1)

DC Current Gain
lie = 1.5A, VeE=4.0V)
lie = 15 A, VeE = 4.0 V)

-

hFE

Collector-Emitter Saturation Voltage

75
Vdc

VeE(sat)

(Ie= 15A, IB= 1.5 A)
(Ie = 25 A. IB = 5.0 A)
Base-Emitter On Voltage
(Ie = 15 A, VeE = 4.0 V)
lie = 25 A, VeE = 4.0 V)

-

I.B

-

4.0

-

2.0
4.0

Vdc

VBE(on)

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain
lie = 1.0 A, VeE = 10 V, I = 1.0 kHz)

hie

25

-

eurrent-Gain-Bandwidth Product (2)
(Ie = 1.0 A, Vee: 10 V, I = 1.0 MHz)

IT

3.0

-

MHz

(1) Pulse Test: Pulse Width = 300 j..Is, Duty Cycle ~2.0%
(2) fT = [hf.l· f test

FIGURE 2 -

SWITCHING TIME EQUIVALENT
TEST CIRCUITS
FIGURE 3 -

TURN'()NTIME

':h
I

.

Ir"-l

20115

RL
10

20

3.0

RS

07
0.5

I

~ 0.3

10 to 100,l.ls
DUTY CYCLE,,;: 2 09'~
1-

TURN'()FF TIME

w

"

;: 0.2
VCC

-30 V

".'

-

... ~

I

30

td-

00 7
0.05

TO SCOPE
Ir.;;;20 os

0.03
0.0 2
0.3

./

,--

(PNP)
(NPN)

r-

1-964

~

==

I"""+-

I
0.5 07

1.0

2.0

3.0

I I II
50 7.0

Ie, COLLECTOR CURRENT (AMPERES)
FOR CURVES OF FIGURES 3 & 4, RS & RLARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.

,.

TJ - 25 0 C
Ic/'S -10
VCC -30 V
VSE(off! • 2 V

1.0

TO SCOPE
Ir ..;:20 os

I -110 V

I

-I

TURN-ON TIME

VCC -30V

10

20

30

TIP35, TIP35A, TIP35B, TIP35C,NPN, TIP36, TIP36A, TIP36B, TIP36C,PNP

FIGURE 4 -- TURN-OFF TIME

---

3.0

,.;::

ts

1.0
O.7
O.5

:2

>-

.....

i
u
u

r-.!!.

tf

O.1

1.0

"- -1.0

3.0

VCE = 4.0 V
TJ = 25°C

~,

5.0

7.0

10

-

20

.t 50

,/

,,- ...
10

50

10

"

PNP
-NPN

---

20

I\,
0.5 0.7

--

200

~ 100

r--..

,~

500

0

O.3

O. 1
0.3

TJ-15'C
VCC,30V=
IC/I O'10 101'101 -

ts

1.0

!w

1000

=

IPNP)
INPN

7.Ot=1=
5.0'"--+-

III

FIGURE 5 -- DC CURRENT GAIN

10

10
01

30

02

05

IC. COLLECTOR CURRENT lAMPE RES)

FORWARD BIAS
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves Indicate IC-VCE
limits of the transistor that must be observed for reliable
operation; i.e .• the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC;;' 25°C. Second breakdown limitations
do not derate the same as thermal limitations.

100

100
50
30
0; 20

TC - 25°C

r--

~
5- 10 1== 0== 300 1";:: ~ 1.0ms

....

~

>-

iB

0
10 ms
de

'" 20

;

TIP35 & 36

10

Secondary Breakdown

u o. 3

Thermal limit
Bondmg Wire limit

-

-- o. 2
o

For inductive loads. high voltage and high current must
be sustained simultaneously dUring turn-off. In most
cases. with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held
to a safe level at or below a specific value of collector
current. This can be accomplished by several means such
as active clamping. RC snubbing. load line shaping. etc.
The safe level for these devices is speCified as Reverse
Bias Safe Operating Area and represents the voltagecurrent conditions during reverse biased turn-off. This
rating IS verified under clamped conditions so that the
device IS never subjected to an avalanche mode. Figure 7
gives RBSOA characteristics.

50

FIGURE 6 -- MAXIMUM RATED FORWARD BIAS
SAFE OPERATING AREA

8 o. 5
REVERSE BIAS

50
1.0
20
10
20
)C. COLLECTOR CURRENT (AMPS)

2.0

1.0

TIP 35A. 36A
TIP35B. 36B

TIP35C. 36C
50
30
5.0 7.0 10
20 30
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

70

100

FIGURE 7 -- MAXIMUM RATED REVERSE BIAS
SAFE OPERATING AREA
40
30

'"~

5- 25

>-

ffi
lE 20

B

'"
0

!;j
::l
8

-

15

TlP35B
TlP36B

10

.=; 5 0

~:~~:
10

1-965

TlP35C : ; ;
TIP36C

TJ';;; 100°C

-

~:~~::L

20
30
40
50
60
10
80
VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)

90

100

TIP35, TIP35A, TIP35B, TIP35C,NPN, TIP36, TIP36A, TIP36B, TIP36C,PNP

-

FIGURE 8 - INDUCTIVE LOAD SWITCHING

VCE Monitor

Ll

(See Note A)

TUT
Input

L2

(See Note AI

50

VCC'lOV

Ie MOnitor

TEST CIRCUIT
~

I

I

5.0V--)

I

tw=6.0ms
(See Note B)

Input
Voltage 0
I
I
I
I..--+- lOOms ------4

I
Collector 0
Current

I
I

I

I

I

-3.0A- -1- - I - I 0-

I

I

J

I

I

t

-lOV
Collector
Voltage
V(BR)CER -

.1 - -

VOLTAGE AND CURRENT WAVEFORMS
NOTES:
A. L1 and L2 are 10 mH, 0.11 n, Chicago Standard Transformer Corporation C-2688, or equivalent
B. Input pulse width IS Increased until leM -3.0 A
C. For NPN, reverse all polarities

=

1·966

NPN

TIP41
TIP41A
TIP41B
TIP41C

@ MOTOROLA

designed for use in general purpose amplifier and switching
appl ications.

•

•
•
•

TIP42
TIP42A
TIP42B
TIP42C

6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON

COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS

•

PNP

40-6()"SO·100 VOLTS
65 WATTS

Collector· Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC =6.0 Adc
Collector· Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - TIP41, TIP42
= 60 Vdc (Min) - TIP41A, TlP42A
= 80 Vdc (Min) - TIP41 B, TIP42B
= 100 Vdc (Min) - TlP41C, TlP42C
High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO·220 'AB Package
TO·66 Leadform Also Available

*MAXIMUM RATINGS
Symbol

TlP41
TIP42

TIP41A
TlP42A

TIP41B
TIP42B

TIP41C
TIP42C

Unit

VCEO

40

60

80

100

Vdc

Collector-Base Voltage

VCB

40

60

80

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

A

IC

6
10

Adc

I
I

Base Cu rrent

18

2.0

Adc

Total Power Dissipation

Po
65
0.52

Watts
W/oC

2.0
0.Q16

Watts
W/oC

62.5

mJ

Rating
Collector-Emitter Voltage

Collector Current

Continuous

Peak

@TC = 25°C

Derate above 25°C
Total Power Dissipation

Po

@TA=250C

Derate above 2SoC
E

Unclamped Inductive

Load Energy (1)
Operating and Storage Junction TJ.Tstg

Temperature Range

-

-

-65 to +150

°c

Max

Symbol

Unit

R6JC

1.92

°C/W

Thermal Resistance. Junction to Ambient

R6JA

62.5

°c/w

Ie = 2.5 A.L = 20

mHo P.R.F. = 10 Hz.

W

tu

rlU

Vee = 10V. ABE = 100 o.

,"';13

Wr:

-IR

PIN 1
2
3
4

'if'

~J

smEl

-m
J
K
L
N
Q

R
S
T
U
V

Z

965
406
064
361
241
279
036
1270
114
483
254
204
1.14
5.97
0.00
1.14

-

XS
1575
1029
482
089
373
267
393
056
1427
139
533
304
279
1.39
6.48
1.27

-

2.03

INCHES
MIN
MAX
0575 0620
0380 0405
0160 0190
0025 0035
0142 0147
0095 0105
0110 0155
0014 0022
0500 0562
0045 0055
0190 0210
0100 0120
0.080 0110
0.045 0055
0.235 0.255
0.000 0.050
0.045
- 0.080

CASE 221A,Q2
T()'220AB

1-967

L

Dd~tG

BASE
CoUECToR
EMITTER
COLLECTOR

B
C
0
F
G
H

::'.l

L-T

smAA

J

DIM

Thermal Resistance, Junction to Case

(1)

S

Tl

THERMAL CHARACTERISTICS
Characteristic

=1rf c
1-+

III

TIP41, TIP41A, TIP41B, TIP41C, NPN, TIP42, TIP42A, TIP42B, TIP42C, PNP

ELECTRICAL CHARACTERISTICS ITC ~ 2SoC unla.. otharwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emlttar Sustaining Voltege 11)
TIP41, TIP42
VCEOlsus)
TIP41A, TIP42A
IIc 30 mAde, lB· 0)
TlP41 B, TIP42B
TlP41C, TIP42C
Collector Cutoff Currant
ICEO
TIP41 , TIP41A, TIP42, TlP42A
IVCE ·30 Vdc, IB ~ 0)
TIP41B, TIP41C, TIP42B, TIP42C
IVCE - 60 Vde, IB ·0)
Collector Cutoff Currant
ICES
TlP41 , TIP42
IVCE ·40 Vdc, VEe· 0)
TIP41A, TlP42A
IVeE· 60 Vde, VEe = 0)
TlP41B, TIP42B
IVCE =80 Vde, VEe = 0)
TIP41C, TlP42C
IVCE· 100 Vdc, VEB = 0)

I

III

I

Min

Max

Unit

40
60
80
100

-

Vde

-

0.7
0.7

Q

Emitter Cutoff Current

-

-

mAde

-

~Adc

-

400
400
400
400
1.0

-

-

lEBO

IVBE - 5.0 Vdc,IC - 0)
ON CHARACTERISTICS 11)
DC Current Gain
IIc = 0.3 Ade, VCE = 4.0 Vdc)
IIc = 3.0 Ade, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage
IIc = 6.0 Ade, IB = 600 mAde)

hFE

-

-

30
15

Bas...Emitter On Voltage
IIc = 6.0 Ade, VCE • 4.0 Vde)

mAde

VCElsat)

-

75
1.5

VBElon)

-

2.0

Vde

fT

3.0

-

MHz

Ihf.1

20

-

-

DYNAMIC CHARACTERISTICS
Currant Gain - Bandwidth Product (2)
IIc = 500 mAde, VCE ~ 10 Vde, ftest =1 MHz)
Small-Signal Current Gain
IIc 0.5 Ade, VCE =10 Vde, f = 1 kHz)

Vdc

Q

(1) Pulse Test: Pulsewidth';; 300 jlS, Duty Cyel... 2.0%.

(2) fT = Ihfe1e f test

TA TC

FIGURE 1 - POWER DERATING

4.0 SO

"
0

~C

...... --..........

"" "'T~ ......

0

"-

~ "-

~

0
20

60

40

100

SO

120

::.....

140

160

T. TEMPERATURE (OC)

FIGURE 3 - TURN-ON TIME

FIGURE 2 - SWITCHING TIME TEST CIRCUIT
2.0

VCC
+30 V

0.7
0.5

RC
RS

SCOPE

~

.

w

.......

0.3
0.2

;::

.........

.:

51

-4 V
CYCLE' 1.0%
RS and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0, MUST SE FAST RECOVERY TYPE, ego
MS05300 USED ASoVE IS =100 mA
MS06100 USED SELoW IB =100 mA

r--....'r
......

0.1

tr. t,:::.10 os
~UTY

TJ'2JOC I
VCC =30 V
IC/IB= 10

1.0

'd@VBE(olf) = 5.0

0.07
0.05
0.03
0.02
0.116

0.1

0.2

0.4

0.6

1.0

IC. COLLECTOR CURRENT (AMP)

1-968

2.0

4.0

6.0

TIP41, TIP41A, TIP41B, TlP41C, NPN, TIP42, TIP42A, TIP42B, TIP42C, PNP

FIGURE 4 - THERMAL RESPONSE

~

10

io

05

:::; o. 7

~
w

3

~

1
O.

~

1

u

0-0.5

01
~

~ 00 71-- 005
00 5
I-- 001
%
... 0.03

ffi
....

ffi

00 li-"

~
....

0.0

in

, .........

::;;;0-

~-

01

III

-

Plpk}

tJUl

,.

12~~

~ SinEliLi1
......,

001

001

005

ZoJCII} - ,III ReJC
ReJC - 1.91' CM Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAOTIMEAT I I
TJlpkl - TC - P(pkl ZeJC(11

DUTY CYCLE, 0 - .,/11

I I

11111

01

01

10

05

10
t,

50

10

I J IIIIJI
50

10

100

I J

J I I III

200

500

1.Ok

TIME (ms)

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
0

~ 5.0
~

....

~

13
or

~

0.5 ms

......

3. 0

.......

2.0 - 1 - TJ - 150'C

"

SECOND BR'EAKOOWN LTD
1.0
BONDING WIRE LTD
THERMAL LIMITATION TC-15'C
o. 5 --,--r-r-(SINGLE PULSEI

-

_
8
E o. 3
o.1

"-

There are two IImitatiol1~ on i.h~ power handling ability of a
average junction temperature and second breakdown.

"'l.° nl'

transistor.

Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e .. the transistor
must not be subjected to greater diSSipation than the curves indicate.

~l

I"

1"-5.0 ms"

The data of Figure 5 is based on TJ(pk) = 150°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid

for duty cyeleSlo 10% provided TJ(pkl';; lSOoC. TJ(pkl may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown.

CURVES APPLY BELOW RATED VCED

t

O. 1
5.0

t TIP41, TIP42.::t-

t t

1'\

TIP41A, TIP42A
TIP41B, TIP41B
TIP41C, TlP41C

10
10
40
60
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTSI

BO 100

FIGURE 7 - CAPACITANCE

FIGURE 6 - TURN-OFF TIME
300

5.0
TJ -15'C
Vec' 30 V
IClis - 10
IS1- ISl

3.0
1.0
ts

l J

TJ 15 C - I--~

100

r- t--

~

.5

1.0

w

u

7
~ 0.5

~ 100

~

U

0:;

0.3

r--.....tf

0.1

.....

~

r"-

-t-

70

C,b

<5

-"""-

0

r0-

O. 1
0.0 7
0.0 5
0.06

0.1

0.1

0,4

0,6

1.0

1.0

4.0

6.0

IC, COLLECTOR CURRENT (AMPI

3O
0.5

1.0

1.0

3.0

5.0

10

VR, REVERSE VOLTAGE (VOLTSI

1-969

10

30

50

TlP41, TIP41A,TIP41B, TIP41C, NPN, TIP42, TlP42A, TIP42B, TIP42C, PNP

FIGURE 8 - DC CURRENT GAIN

FIGURE 9 - COLLECTOR SATURATION REGION

2. 0

500

II]

300

'"~

....
i:l
u

c

6
IC

10 0

1-25 0C

70
~ 50

a

II
II

VCE~20V

r--

TJ'1500C

200

30

LOA

2.5A

5.0A

1. 2

o.S

~

t-- t-- -..

-55 bC

~ 20

~

Tj'~5lJ

f"'-

o.4

0
7.0

5. 0
0.06

0.1

0.2

0.3

0.4

0.6

10

4,0

2.0

0
10

6.0

20

30

50
100
200
IS, OASE CURRENT [mAl

IC, COLLECTOR CURRENT (AMPI

FIGURE 10 - "ON" VOLTAGES

2. 0

II

G

3;

TJ' 25°C
1. 6

~If

2

S

o.4

I

VCE( ..tl @Ic/lO ~ 10
0
0,06

0.1

0.2

I

~

-

0.6

1.0

V
2.0

+1.0

....~

JU

+~50C lt15o~
OVS FOR VSE

-2,0
-2.5
0.06

0.2

1....
~

10

0.3

11 II1.0

2.0

3.0 0.4

0.6

FIGURE 13 - EFFECTS OF BASE-EMITTER RESISTANCE
VCE-30V:

TJ~1500C

1

16'

I"

r...

100°C

1
10 ,

r....

k

!=

IC~S

r:::..::

IC =2, ICES l - t-

25°C

::>

~ 100

o

~

IC 'ICES

k

:j lO- 1

r--.

IC 'ICES

S
2~REVERS

FORWARP

k

10-3
-0.3

0.5

10 M

f- VCE-30V

10

1-1-

W -55°C to +250C

II
0.1

./

IC, COLLECTOR CURRENT (AMP I

FIGURE 12 - COLLECTOR CUT·OFF REGION

2

It-

U --±:::::I

-1.0

IC, COLLECTOR CURRENT IAMPI

10 3

V

+25 0 C to +150oC

- [}'C to +25 0C

-1.5

6.0

1/

V
'OVC FO R VCE(sati

-0.5

~

3.0 4,0

hFE~4

+0.5

::>
'"
....

~

V

0,3 0.4

'"zt;;
S
w

P'
--== ~

yOE·@/CE[~4.0y

+1.5

~

.iJpLES FIOR IbIlS)

+2.0

g

13

~
10

1000

500

FIGURE 11 - TEMPERATURE COEFFICIENTS
+2.5

VSE(satl@IC/lo

300

-0.2

-0.1

+0.1

+0.2

+0,3

+0.4

+0.5

+0.6

+0.7

VBE, BASE·EMITTER VAOLTAGE (VOLTSI

1-970

f= (Typical ICES Values

I

~ I obtaIned from Figure 121

0.1 k
20

40

"

.......

60
80
100
120
TJ, JUNCTION TEMPERATURE (OCI

.....

140

180

®

TIP47 TIP48
TIP49 TIP50

MOTOROLA

1.0 AMPERE

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

POWER TRANSISTORS
NPN SILICON

· .. designed for line operated audio output amplifier, Switchmode
power supply drivers and other switching applications.
•

250 V to 400 V (Min) - VCEO(sus)

•

1 A Rated Collector Current

260·300·350·400 VOLTS
40 WATTS

• Popular TO·220 Plastic Package
• TO·66 Leadform Available

MAXIMUM RATINGS
Rating

Symbol

TIP47

I

TIP48

I

TIP49

TlP50

Unit

VeEO

250

I

300

I

350

I

400

Vdc

350

I

400

I

450

I

500

Vdc

Collector-Emitter Voltage

Collector-Base VOltage

VeB

Emitter-Base Voltage

VEB

Collector Current

Continuous

--.....
..

Ie

Peak
Base Current

18

Total Power Dissipation
@Te= 25 0 e

PD

Total Power Dissipation
. @TA=25 0 e

Derate above 25° C
E

Unclamped I ndueting Load
Energy (See Figure 8)
Operating and Storage Junction

Vdc

....

1.0
2.0
0.6

Adc
Adc

...

40
0.32

.....
...

PD

....

5.0

.....

Derate above 25° C

I

Watts

w/oe

...

2.0
0.016

Watts

w/oe

...

20

mJ

_ _ _ -65 to + 1 5 0 _

TJ.Tstg

Temperature Range

THERMAL CHARACTERISTICS

""
............

~

B

C
D
F

1'-.

"'~

r---....

...........

G
H
J

""-

TA

K

L
N

TC

"" .'"

Q

R

---I'---

-............:

20

,"';13 Vj

r-I4 w-W-rj'lTt'L~
DIM
A

0

0

tu

,I

~

~

~

roo

L

o-H-

STYLE 1
PIN 1. BASE
2 COLLECTOR
3 EMITTER
4 COLLECTOR

FIGURE 1 - POWER DERATING

0

1----1

A

-lI-J

Thermal Resistance, Junction to Ambient

0

r-fT
C

:S!GTAA

Characteristic
Thermal Resistance, Junction to Case

0

°e

~I-S

1m

S

T
U
V

~

140

TC. CASE TEMPERATURE lOCI

1-971

Z
160

N

MILLIMETERS
MIN MAX
1460
965
406
064
361
241
279
036
1270
114
483
254
204
114
5.97
0.00
1.1'

-

1575
1029
482
089
373
267
393
056
1427
139
533
304
279
139
6.4B
1.27

-

2.03

INCHES
MIN
MAX
0575
0380
0160
0025
0142
0095
0110
0014
0500
0045
0.190
0100
0080
0045
0.235
0.000
0.045

0620
0405
0190
0035
0147
0105
0155
0022
0562
0055
0210
0120
0110
0055
0.255
0.050

-

O.OBO

CASE 221A-02
TO-220AB

-

G

TIP47, TIP48, TIP49, TIP50 NPN

ELECTRICAL CHARACTERISTICS (TC = 25°C unle.. otherwise noted)

I

Characteristic

Symbol

Min

Max

Unit

-

Vde

OFF CHARACTERISTICS

Coliector-Emitte~Sustaining Voltage (1)
(lC

TIP47
TIP48
TIP49
TlP50

=30 mAde, ie = 0)

Collector Cutoff Current
(VCE = 150 Vde, Ie =
(VCE = 200 Vde, Ie =
(VCE = 250 Vde, IB =
(VCE = 300 Vde, 18 =

Collector Cutoff Current
(VCE
(VCE
(VCE
(VCE

=
=
=
=

350
400
450
500

Vde,
Vde,
Vde,
Vde,

250

VCEO(sus)

300
350
400

-

-

1.0
1.0
1.0
1.0

-

1.0
1.0
1.0
1.0

30
10

150

VCE(sat)

-

1.0

Vde

VBE(on)

-

1.5

Vde

IT

10

-

MHz

hfe

25

-

-

-

mAde

ICED
0)
0)
0)
0)

TlP47
TlP48
TlP49
TlP50

=

TIP47
TIP48
TIP49
TIP50

-

mAde

ICES

VBE 0)
VBE = 0)
VBE = 0)
VBE = 0)

Emitter Cutoff Current

lEBO

1.0

mAde

(V BE = 5.0 Vde, IC = 0)
ON CHARACTERISTICS (1)

DC Current Gain

-

hFE

(lC = 0.3 Ade, VCE = 10 Vde)
(lc = 1.0 Ade, VCE = 10 Vde)

Collector-Emitter Saturation Voltage

-

(lc = 1.0 Ade, IB = 0.2 Ade)
Base--Emitter On Voltage
(lc = 1.0 Ade, VCE = 10 Vde)

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product
(lC = 0.2 Ade, VCE = 10 Vde, f = 2.0 MHz)
Small-Signal Current Gain
(lC = 0.2 Ade, VCE = 10 Vde, f = 1.0 kHz)
(1) Pulse Test: Pulsewidth";;; 300 "s, Duty Cycle";;; 2.0%.

~IGURE

2 - SWITCHING TIME EQUIVALENT CIRCUIT

FIGURE 3 - TURN'()N TIME
1.0

TURN·ON PULSE

,,:rt~AX
Vin 0 .:..
I

- - -

13

I
:

Vio-

i - I

~

TURN·OFF PULSE

l=
f=
L

-' 0.05
-4.0 V

-

0.02

I

---I

--

ld

o. 1

>=

11 .;7.0",

: : 100<12<500",
-,- T - t3<1508

"

o. 2
~

fI

........

O_""'''v-~,......-I

51

APPROX

TJ' 25 0 C
VCC' 200 V
ICIIB - 5.0

o. 5

RC

Vin

VEB(Off)--t 1--,1

+11 V

Vce

OUTY CYCLE ~ 2.0%
APPROX -9.0 V

0.0 1

0.02

0.05

0.1

0.2

0.5

IC, COLLECTOR CURRENT (AMPS)

RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.

1-972

1.0

2.0

TIP47, TIP48, TIP49, TIPI50 NPN

FIGURE 4 - THERMAL RESPONSE
0
7
0
5

05

0

3

t-

t;;;.-I""

01
1

4.
~
II-

ffi

J...- I-t;;;

02

2

00 7r-- 005
005
f-- 002
00 3
00210-

~
;i 001 /
I-

PIOkl

fd::::

f-

z"JCIII rill ROJC
ROJC 3.125' C/w Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATtt

tJLJl

0

0

~:-~

V

n

001

::?

i

TJlokl- TC P{okl ZOJCItI
0

DUTY CYCLE. 0 '1112
0

TiEIILII!

002

005

IIIII

01

02

10

05

20
t,

50

10

I

I I I IIIII

I

50

20

100

I I

I

200

I I III
500
1.0k

TIME (ms)

FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
5.0

~

2.0

5.

to

~

0.5

:0;

I-

[l

~

~

i\. '\. ,""'t-IT~ ~125' C

--SECONDARY BREAKDOWN LIMITED
-----THERMALLY LlMITEO@25'C
O. 1
- BONDING WIRE LIMITED

0.2

S

0.05

:J

0.02

There are two limitations on the power handling ability of a
transistor. average Junction temperature and second breakdown.
Safe operating area curves Indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater dISSipation than the curves indicate.
The data of Figure 5 IS based on T J(pk) :::: 150°C; T C IS variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles 1010% prOVIded TJ(pk)";;; 150°C. T J!pk) may be
calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the pow.er that can be handled to
values less than the limitations Imposed by second breakdown.

oL

-

ttRVES APPLY BELOW
RATED VCEO

1111
5.0

I

I

~ '\ :~'"
.Oms
TIP47
TIP48 -

I II II tim

10
20
50
100
200
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI

500

FIGURE 7 - TEMPERATURE COEFFICIENTS

FIGURE 6 - TURN-OFF TIME
+4. 5

5. 0

--.!!.

0-

.......
0

~

o. 5

r-..

'"

;::

o. 2

TJ - 25° C

;:;

VCC o200V
IcllB = 5.0

e...
~

-./

0.02.

+0. H--BVC FOR VCE!satl

=>

0
-0. 5

~

i
0.1
0.2
0.5
IC. COLLECTOR CURRENT (AMPSI

1.0

2.0

1-973

-1.

I

+~5'IC 'l'i'10~
-55 a C ta +25 0 C

I

I I

5I-B~B FbR ~B~

-2. 5
0.02

I

/

~

~

0.05

I

U

~ +1. 5

~

0.05

II II

+2.5

:0;

o. 1

T

APPLIES FOR IcllB < hFEI5

E
8

r--- If

+3. 5

I I
0.05

TTTT

+25' C to +150' CLJ..I.1-

.-.--

1 -155~Clto+~~'c0.1
0.2
0.5
IC. COLLECTOR CURRENT (AMPS)

1.0

2.0

TIP47, TIP48, TlP49, TlP50 NPN

FIGURE 8 - INDUCTIVE LOAD SWITCHING

IIJ

Voltage and Current Waveforms

Test Circuit

I

:;':I~=g.

100mH
Vee=20V
Input

tw~3ms

I

ovi

i

(See Note A)

I
r - - - lI---lI
-5v--H
:---+-100ms~
I

O 3

I
I
.---------T-

Current

oV
VeER

I

I

I

Voltage

I

I

I
--1---

Collector

I

I

10 V

'eM = 0.63

A.

I

I

I

:I

II

I

I

~
....

i
'-'
c

;

60

I

__

I

FIGURE 10 - "ON" VOLTAGES
1.4

V~~~ Jov

1.2

lQO

z

I

' ________ -{ ___ I

VCE(sat)--

FIGURE 9 - DC CURRENT GAIN
200

I
I

I

I

Note A: Input pulse width is increased until

:
I

COllecto~6 A~_:
___
I ---

Ie Monitor

i==TJ' 150 0 C

40
20

~

25° C

VSE(,,'I@ IC/IS' 5.0

~ 0.8

I
-550

[/

1.0

C

10

~

w

'"~

0.6

VSE(on)@VCE'4V

F="

c

>

>~

..-

2.0
0.02

0.2
0.2
0.4 0.6
0.04 0.06 0.1
IC. COLLECTOR CURRENT (AMPS)

1.0

o

2.0

0.02

1-974

7
7

TJ' 25 0 C

0.4

B.O

4.0

'7 7

,/
VCE(sat)@lc/ls,1 5.0 V
0.04 0.06

0.1
0.2
0.4 0.6
Ic. COLLECTOR CURRENT (AMPS)

1.0

2.0

NPN

®

TIPIOO TIPIOS
TIPIOI TIPI06
TIPI02 TIPI07

MOTOROLA

PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS

DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS

· .. designed for general-purpose amplifier and low-speed switching
applications.
•

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

•

Col lector· Emitter Sustaining Voltage - @30 mAdc
VCEO(sus) = 60 Vdc (Min) - TIPtOO, TlPt05
= 80 Vdc (Min) - TIPtOt, TIPt06
= 100 Vdc (Min) - TIPt02, TIPt07
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC=3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Built-In Base-Emitter
Shunt Resistors

•

•
•
•

PNP

60-80-100 VOLTS
80 WATTS

TO-220AB. Compact Package
TO-66 Leadform Also Available

*MAXIMUM RATINGS
Symbol

Rating
Collector-Emitter Voltage

VeEO
VeB
VEB

Collector-Base Voltage
Emitter-Base Voltage
Collector Current

Continuous

Peak

Ie
IB
Po

Base Current

Total Power Dissipation

@

Te

= 25°C

Derate above 25°C

E

Unclamped Inductive Load Energy (1)

Total Power Dissipation @ TA
Derate above 25°C

= 25°C

Operating and Storage Junction
Temperature Range

Po
TJ, T stg

TIP100, TIP10l, TIP102,
TIP105 TlPl06 TIP107
80
100
80
100
5.0
8.0
15
1.0
80
-0.64
30
2.0
-0.016--60
60

--65to+150-

Characteristics
Thermal Resistance, Junction to Ambient

ROJA

11) Ie = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, Vee = 20 V, RBE

=

100

n.

FIGURE 1 - POWER DERATING

"-1"-

z

o

~~

2040

..........

C

=
~

r--...

~ 1.02 0

~

o
o

20

40

wf'le
°e

h:;Ll

~rt

]t

u

Y;;~A'A

B

C
D
F
G
H
J

~TC

""
~

K

"

TA

.......

L
N
Q

'" "-

R

S
T
U

.............

60
80
100
T, TEMPERATURE (OCI

~~

120

140

160

I~~

II
LL JIn L'
A

DIM
A

TA TC

3060

Watts

~FfS c
111.~

V
Z

H

Z

t

Dd'~N' 't~

STYLE I
PIN L BASE
2 COLLECTOR
3 EMITTER
4 COLLECTOR

Thermal Resistance, Junction to Case

i

Adc
Adc
Watts
wf'le
mJ

-:Jt~

THERMAL CHARACTERISTICS

4.0 80

Unit

Vdc
Vdc
Vdc

MIlliMETERS
MIN
MAX
1460 1515
965 1019
406
481
064
089
361
373
141
167
179
393
036
056
1170 1417
I 14
139
483
533
254
304
204
279
114
139
597
648
0.00
127
1.14
103

INCHES
MIN
MAX
0575 0610
0380 0405
0160 0190
0015 0035
0141 0147
0095 0105
0110 0155
0014 0012
0500 0562
0045 0055
0190 0210
0100 0120
0080 0110
0045 0055
0235 0255
DODO 0050
0.045
0.080

CASE 221A-02

T0-220AB

1-975

ID

TIP100, TIP101, TIP102 NPN/TIP105, TIP106, TIP107 PNP

ELECTRICAL CHARACTERISTICS (TC ~ 250 C unless otherwise noted)
Svmbol

Characteristic

Min

Max

60
80
100

-

Unit

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC ~ 30 mAde, Ie ~ 0)

Collector Cutoff Current
(VCE ~ 30 Vde, Ie = 0)
(VCE ~ 40 Vde, Ie ~ 0)
(VCE ~ 50 Vde, Ie ~ 0)
Collector Cuttoff Current
(Vce = 60 Vde, IE = 0)
(Vce = BO Vde, IE = 0)
(Vce = 1.00 Vde, IE = 0)
Emitter Cutoff Current
(VeE = 5.0 Vde, IC ~ 0)

Vde

VCEO(5u5)

TIP100, TIP105
TlPl01, TlPl06
TlPl02, TIP107
ICED

I'Ade

-

TlPl00, TIP105
TIP10l, TIP106
TIP102, TIP107
IceD
TIP100, TIP105
TIP10l, TIP106
TIP102, TIP107

50
50
50

I'Ade
50
50
50
B.O

-

IEeO

mAde

ON-<:HARACTERISTICS (1)
DC Current Gain
(lC = 3.0 Ade, V CE =4.0 Vde)
(lc = B.O Ade, VCE = 4.0 Vde)
Coliector·Emitter Saturation Voltage
(lc = 3.0 Ade, Ie = 6.0 mAde)
(lc ~ 8.0 Ade, Ie ~ 80 mAde)

-

hFE
20,000

-

-

2.0
2.5

-

2.B

4.0

-

Vde

VCE(satl

eaie-Emitter On Voltage
(lC ~ 8.0 Ade, V CE =4.0 Vde)

1000
200

Vde

VeE(on)

DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(lC ~ 3.0 Ade, VCE ~ 4.0 Vde, f ~ 1.0 MHz)
Output Capacitance
(Vce ~ 10 Vde, IE ~ 0, f ~ 0.1 MHz)
TIP105, TIP106, TIP107
TIPloo, TIP101, TlPl02

Ihfe I

pF

Cob

-

300
200

-

(1) Pulse Test: Pulse Width"; 3001'5, Dutv Cycle"; 2%.

FIGURE 3 - SWITCHING TIMES

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
5.0
3.0

Vee

-30V

~~.~~~v::~~~g~Je~~$~~:i:';i~RENT

LEVelS

M8D5300 USED ABOVE '8" 100 mA
MSD6100 USED BELOW 18 '"' 100 rnA

2.0

RC
SCOPE

~

::'o"~-~d~-~-~__ 1~
v,

IPJrox __

-12v

I I

Ir.tt" IOns

2hs

1.0

O.7
:E O.5

V2

t=

O.

51

~

tl .....

-

p.--

'i"-.

.......

3
.........
O.2 -VCC; 30 V
_lc/lS; 250

r--..

.....
tt

'-

td@VBE(ottl;O~
O. 't:::~~'_;2~%~
F '
PNP
0.07
NPN
0.05
0.5 0.7 1.0
0.2 0.3
0.1

for td and tr. D,lsdisconnected
and V2'"O

For NPN test ClfCUlt revel'Sl all polarities.

DUTY CYCLE" 1 0%

-1i"""" t--

r

....
2.0

3.0

IC. COLLECTOR CURRENT (AMP)

1-976

5.0 7.0

10

TIP100, TlP101, TlP102 NPN/TIP105, TIP106, TIP107 PNP

FIGURE 4 - THERMAL RESPONSE

~
;t

10
07

'"'"'"

0,05

5

~ o. 3
:1 02
:;;

~

0.2

~ 00 7f--

ffi
"........

0.05

--::;::;;;;;;"'-1"""

/!li

0.0

w:::: -

, ..... 1--1

001

-

Plpk}

002

SinE
005

....

~~~

~UTY

r~LrT
01

ZeJCI'} , rl.} ReJC
ReJC ' 1.56'C,w Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT.,

tJUl

005

f-- 002

0.0 3

~ 0.02 1-:=

~
....

....-

01

1

11111
10

05

02

I I

10

20
50
I, TIME (ms)

TJlpk} - TC' Plpk} ZeJC(.}

CYCLE. 0, .,1'2

I I

I I 111111

20

50

100

I I II II

200

500

10k

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
20

~~
<-,

10

~
....
~

5.0

2.0

~

1.0

'"o

0.5

~_

de I ....

O. 1

'?>,

0.02
1.0

2.0
5,0
10
20
50
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS}

average Junction temperature and second breakdown .

The data of Figure 5 IS based on T J(pk) '" 150°C; T C IS vanable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% prOVided TJ(pkl
1500 C. TJ(pk) may be
calculated from the data m Figure 4. At high case temperatures.
thermal limitations Will reduce the power that can be handled to
values less than the I imitations imposed by second breakdown

<

TIPtoO, TIPI05
TlPl0l, TIP106
T1Pl02, TIPI07

0.05

10,000

tranSistor:

Safe operating area curves mdlcate Ie - VeE limits of the transistor that must be observed for reliable operation, I.e., the tranSistor
must not be subjected to greater diSSipation than the curves indicate.

TJ"50'C
-- BONDING WIRE LIMITED
- - - THERMALLYLIMITED@TC<25'C
- - - SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

0.2

S
si

There are two limitations on the power handling ability of a

",-~

100

FIGURE 7 - CAPACITANCE

FIGURE 6 - SMALL-SIGNAL CURRENT GAIN
._ -~

300

f---

T~' 125~~

20 0

:=:: f:.

'-

"-

0

-

'-C,b

""-

C,\

0

>-

0

30

-----PNP
- - -NPN
02
10
05

01
I, FREQUENCY 1kHz}

20

50

10

VR, REVERSE VOLTAGE IVOl TSI

1-977

20

50

100

TIP100, TIP101, TIP102 NPN/TIP105, TIP106, TIP107 PNP

NPN
TIP100. TIP101. TIP102

PNP
TIP105.TIP106. TIP107

I

FIGURE 8 - DC CURRENT GAIN
20.000

I I

~

20.000 r---,-,-,-,--r-TTTT-,--,-,--r----r,--,--,-r-n

I

~~~~--~~~+--+-+--+_V6E~4'0~

VCe: 4.0V

10.000

7000~
10.000'iil~fiil
" /1-"
....
- .:-.
'" ~
X

5000

.. lOaa

8'" 3000 YI
~ 2000
a.... " 21·C/
TJ.1SO"C./

/

TJ .110.C..........

~

-

i-'

~ 300a

\.

~200a
~

co 1000

~

co

;;Z ~-II.C

lOa
300
200

"

~/

30
20

0.2

./

70a
100==,-I5.C

~

I

0.1

21°C

::>

<->
<-> 100 a

0.3

0.1

0.7

1.0

2.0

3.0

1.0

7.0

10

.Y

0.1

0.2

0.3

0.1

IC. COLLECTOR CURRENT (AMPI

0.7

1.0

3.0

2.0

5.0

70 10

IC. COLLECTOR CURRENT (AMP)

FIGURE 9 - COLLECTOR SATURATION REGION

en

:;

3.0

III

'"2:
~

2.6

2.2

::
~
a:

'"2:

~ 2.6

\
\
\

'"

'"

~8

2.2

~

J8

c:

1.4

\

6.0A

1\

\
\
f'..

g'"

f\...

1.4

40A

::;;;

1,8

TJ·25 0 C

1 II

Ie" 2.0A

~

'"ffi

II

I III
J Hl

:;

S.OA

:;

'"ffi

c:? 3.0

TJ·21 oC
4.0A

I ·2.0A

<.>

~

~

r-.

> 1.0
0.3

>

0.5

0.1

1.0

2.0

3.0

5.0

7.0

20

10

1.0

30

0.3

0.5

0.7

1.0

lB. BASE CURRENT (mAl

2.0

3.0

5.0

7.0

10

20

30

lB. BASE CURRENT (mAl

FIGURE 10 - "ON" VOLTAGES
3.0

3.0

l

TJ" 25 0 C

rJL5. c
2.5

~2:

25

20

>

15

!:;

/1/

'"2:

~.r

w

~'"

/

Vi

.::::; ~

VBE(~t) @ICIIB· 250

:>

V
VSE@ VCE • 4.0 V

1.0

1--1-""

VCEI ..t)@ IC·IB· 250

o5
0.1

'"
~
'">

03

05

07

1.0

2.0

30

r10

5.0

7.0

10

IC. COLLECTOR CURRENT lAMP)

05
01

V V

VBElsatl @le Il B·250

T'I

./

....V

VBE @VCE-40V
I

15

>'

./"

I
02

20

I L
VeEI",)@le 18. 250

02

03

os

07

10

20

30

IC. COLLECTOR CURRENT (AMPI

1-978

SO

70

10

NPN

®

PNP

TIPII0 TIP115
TIPlll TIP116
TIP112 TIP117

MOTOROLA

II.
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS

DARLINGTON
2 AMPERE

· .. designed for general-purpose amplifier and low-speed switching
appl ications.
•
•

•
•
•
•

COMPLEMENTARY SILICON
POWER TRANSISTORS

High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) - TIPll0, TIPl15
= 80 Vdc (Min) - TIPlll, TIPl16
= 100 Vdc (Min) - TIPl12, TlPl17
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
Monolithic Construction with Built-In Base-Emitter
Shunt Resistors
TO-220AB Compact Package
TO-66 Leadform Also Available

60-80-100 VOLTS
50 WATTS

*MAXIMUM RATINGS
Symbol

TIPll0,
TIP115

TIPlll,
TIP116

TIP112,
TIP117

Unit

VCEO

60

80

100

Vdc

Collector-Base Voltage

VCS

60

80

100

Em itter-Base Voltage

VEe

Rating

Collector-Emitter Voltage

Collector Current

Continuous

IC

Peak

.....

2.0
4_0

..

Base Current

Ie

_50

Total Power Dissipation@Tc - 2SoC

PD

50
_0.4

PD

-

Derate above 2SoC
Total Power Dissipation @ T A

= 2SoC

Derate above 2SoC

E

Unclamped Inductive
Load Energy - Figure 13

TJ, T stg

Operating and Storage Junction,

....

Vdc

....

mAde

....

_5.0

..
..

..

Vde
Ade

Watts
W/oC

2.0
_0.016_

Watts
W/oC

25

mJ
°c

_ - 6 5 to +150 -

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R8JC

2.5

°C/W

The,rmal Aesistance, Junction to Ambient

R8JA

62.5

°C/W

Characteristics

FIGURE 1 - POWER DERATING

STYLE l'
PIN 1. BASE
2 COLLECTOR
3 EMITTER
4 COLLECTOR
DIM

TA TC

A
B

~

'"

C
D
3.060

F
G

~

~

............

>=

::
Bi

H
J

........
........... ..................

2.040

C

'"~

..........

'T;;......: N

~ 1.020
~c

00

K

L
N

.........

o

20

40

a

R

~

60
80
100
T. TEMPERATURE (DC)

S
T
U
V
Z

i ' .....

120

140

160

MIlliMETERS
MIN
MAX
1460 1575
965 1029
406
482
064
089
361
373
241
267
279
393
036
056
1270 1427
114
139
483
533
254
304
204
279
1.14
139
597
648
0.00
127
1.14
2.03

INCHES
MIN
MAX
0575 0.620
0380 0405
0160 0190
0025 0035
0142 0147
0095 0105
0110 0155
0014 0022
0500 0562
0045 0055
0190 0210
0100 0120
0.080 0110
0045 0055
0235 0.255
0.000 0050
0.045
0.080

CASE 221A-02
TQ-220AB

1-979

TlPll0, TIPlll, TIPl12, NPN, TIPl15, TIPl16, TIPl17, PNP

ELECTRICAL CHARACTERISTICS

I

(TC: 25 0 C unle .. otherwise noted)

Characteristic

Symbol

Min

Max

60
BO
100

-

-

2.0
2.0
2.0

Unit

OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage (1)

(lC

=30 mAde, IB = 0)

Collector Cutoff Current

mAde

ICEO

(VCE = 30 Vde, IB = 0)
(VCE : 40 Vde, 18 = 0)
(VCE = 50 Vde, 18 = a)

TIPll0, TIPl15
TIP111, TIPl16
TlP112, TlPl17

Collector Cutoff Current

mAde

ICBO

(VCB = 60 Vde, IE = 0)
(VCB =80 Vde, IE = 0)
(VCB = 100 Vde, IE = 0)

TIP110, TIPl15
TIP111, TIPl16
TIP112, TIPl17

-

1.0
1.0
1.0
2.0

1000
500

-

-

2.5

-

2.8

25

-

~

Emitter Cutoff Current

(V BE

Vde

VCEO(sus)

TIPll0, TIPl15
TIPlll, TIPl16
TIPl12, TIPl17

lEBO

= 5.0 Vde, IC = 0)

mAde

ON CHARACTERISTICS (1)
DC Current Gain

(lC = 1.0 Ade, VCE
(lC = 2.0 Ado, VCE

Collector-Emitter Saturation Voltage

= 8.0 mAde)

VCE(sat)

Base-Emitter On Voltage
(lC = 2.0 Ade, VCE = 4.0 Vde)

VeE(on}

(lC = 2.0 Ade, 18

DYNAMIC CHARACTERISTICS
Small-5ignal Current Gain
(lC = 0.75 Ade, VCE = 10 Vde, f

= 10 Vde, IE =0, f = 0.1

Vde
Vde

Ihfe l
=

1.0 MHz)

Output Capacitance

(VCB

-

hFE

= 4.0 Vde)
= 4.0 Vde)

pF

Cob
MHz)

-

TIPl15, TlPl16, TIPl17
TIPll0, TIPll1, TIPl12

200
100

-

(1) Pulse Test: Pulse Width .. 300 ,",S, Duty Cycle .. 2%.

FIGURE 3 - SWITCHING TIMES

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
4.0 1, .

Vee

VCC -30V
Ic/18=250 - I18P I82
TJ = 25°C l,.--

-30V

RS & RC VARIED TO OBTAIN DESIRED CURRENT lEVELS
01. MUST BE FAST RECOVERY TYPES, e g.,
MBD5JOO USED ABOVE 18 ". 100 mA

MSOS100 USED BElOW'B" 100 mA

:'\.

2.0

Re
SCOPE

ts~

..-

w 1.0
;::: 0.8

O. 6
0.4

......
~

to obtam desrred test currents
For NPN test tlrCUlt, re'ferse dIode,

O. 2
0.04

polantlesand mput pulses

-.?

....

V

..........

PNP
----NPN

0.06

0.1

')tf

-

-

I--.

............
0.2

1'1..0.4

--

I-

r--..

tr~

""
7'

r~@~:r=o,
0.6

1.0

IC. COLLECTOR CURRENT (AMP)

1-980

c:;;:

.......

~ ~ ~ ~I--"

]:

for td and tr, O,lsdlSCORllected
andV2=O, Rsand RC are vaned

~i"""'

~

2.0

4.0

TIP110, TIP111, TIP112, NPN, TIP115, TIP116, TIP117, PNP

FIGURE 4 - THERMAL RESPONSE

c

~

:;

III

10

«
~

1
0' 05
5

~
w
u

3

o
z

-;;;..- -

02

2

«

t;

01

~

1

ZnJC!tl = r(t) ROJC
ROJC ' 2.5° CIW Max
o CURVES AP1'L Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11

« 001·- 005
~ 005

i!:

.... 003

-

002

""

I 1---

~_ 0 02~r,;-;;;0
01:
-~~~j;tttt=t:t~=~::t+ttt=t:j::=~~
~
.

001 .......
001

f-'1

002

S'iG\E
00\

r~Lf\

TJlpkl- TC Plpkl ZOJCltl
0

DUTY CYCLE, 0 : 11'12

I I I II

01

02

05

10

20
I,

50

I

10

I

I

20

I I I 1 111
50

100

1 1

1 1 1 1 11

200

500

10k

TIME (ms)

ACTIVE·REGION SAFE·OPERATING AREA
FIGURE 5 - TIP115,116,117

FIGURE 6 - TIPll0, 111, 112

10

10

~ 4.0

'\

":!

~

'"~
'"

1m.

5m.

2.0

TJ =15OoC
, ,
"

de

,

, 1,\

~

d
0.1

.

1.0

~URVES APPLY BELOW
RATED VCEO

II

t\

-

f-.

- BONDING WIRE LIMITED
----THERMALLy LIMITED
@TC=250C(SINGLEPULSEI
--SECONDARY BREAKDOWN LIMITED

1\

d~

TJ = 150°C

1.0

0

8
i>

r\

-BONDING WIRE LIMITED
- - --THERMALLY LIMITED
__

TIP115
TIPI1S
TlPI17

10
40
VCE' COLLECTOR EMITTER VOLTAGE (VOLTS)

~E~~~~5:~~!I~g~~:~~~~iED

r

~ CURVES APPLY BELOW 1
RATED VCEO

O. 1
1.0

SO Bo 100

TlP1l0 TlPlllTIP112

10
VCE' COLLECTOR EMITTER VOLTAGE (VOLTS)

SO 80 100

FIGURE 7 - CAPACITANCE
200

I 1111
TC = i~6c

There are two limitations on the power handling ability of a
transistor. average Junction temperature and second breakdown
Safe operating area curves Indicate Ie - VeE limits of the tranSistor that must be observed for reliable operatIon, I.e., the tranSistor
must not be subjected to greater diSSipation than the curves indicate

The data of Figures 5 and 6 is based on T J(pk) = 150DC; TC is
variable depending on conditions. Second breakdown pulse limits
are valid fordutv cycle. to 10% provided TJ(pk) <150o C. TJ(pk)
may be calculated from the data in Figure 4. At high case tempera~
tures, thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.

~ 100
w

~

70

;!:

f'..

i3 50

~c..i

30

-

Cob

-

I"-- io:::L_,~:b.....

20

-

---PNP
- - - N tN
10
0.040.OS 0.1

0.2

0.4 O.S

1.0

2.0

4.0 S.O

VR. REVERSE VOLTAGE (VOLTS)

1-981

~i'

10

20

40

NPN

PNP

TIP120 TIP125
TIP121 TIP126
TIP122 TIP127

®

MOTOROLA

PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS

DARLINGTON
8 AMPERE

· .. designed for general-purpose amplifier and low-speed switching
appl ications.

COMPLEMENTARY SILICON
POWER TRANSISTORS

•

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - TlP120, TIP125
= 80Vdc (Min) -TlP121, TlP126
,
= 100 Vdc (Min) - TIP122, TIP127
• Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC=3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built-In Base-Emitter
Shunt Resistors
• TO-220AB Compact Package
• T0-66 Leadform Also Available

60-80-100 VOLTS
65 WATTS

*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

VeEO
VeB
VEB

COllector-Base Voltage
Emitter-Base Voltage
Collector Current

TIP120,
TIP125
60
60

Symbol

Continuous

•
•
•

Ie

Peak

Base Current
Total Power Dissipation @Te - 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
Deratl above 25°C

•
•
•
•

·

•

E

Operating and Storage Junction,
Temperature Range

•
•
•

120
65
0.52
_2.0
0.D16

Po

Load Energy (11

TIP122,
TIP127
100
100

•
•

IB
Po

Unclamped Inductive

TIP121,
TIP126
80
80
5.0
5.0
B.O

•
•

50

--65to+150-

TJ, Tstg

THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case

= 10 Hz, Vee = 20 V, RSE = 100 n.

Watts
wfOe
mJ

S

r-~
A

.

,I

A·A

°e

STYlEI-I~
DIM

R
S
T
U
V

14
965
406
064
361
241
279
036
1270
1.14
483
254
204
1.14
5.97
000
114

Z

-

F

""

2.040

"" I"'-.

C
~

~

G
H

J

~c
TA

............

~ 1.02 0

K
L
N

"- J'...

Q

"" J"... 1'-.-........;::

~

0
20

40

60

80

100

120

&

140

y
,'13 .:J.

I r.;"
-WT:

fT

~

3.060

z

F

lu

'uK

B
C
0

o

~~

mAde
Watts
wloe

=1rf c

Z

L!
l-H'

H

Dd~tG

L

r-~ETERS

4.0 80

i

Ade

2. COLLECTOR
3 EMITTER
4 COLLECTOR

FIGURE 1 - POWER DERATING

TA TC

Vde
Vde
Vde

PIN 1. BASE

Thermal Resistance, Junction to Ambient

(llle = 1 A, L= 100 mH, P.R.F.

Unit

160

T, TEMPERATURE (OC)

1-982

...."X
1575
1029
482
089
373
267
393
056
1427
139
533
304
2.79
139
6.48
127

-

2.03

I

~AX

0620
0405
0190
0035
0147
0105
0155
0022
0562
0055
0.210
0120
0.110
0055
0.255
0.050

-

0.080

221A'()2
T()'220AB

CASE

lES

0
0
0
0
O.
0095
0110
0014
0500
0045
0190
0.100
0.080
0045
0235
0.000
0.045

-

TIP120, TIP121, TIP122, NPN, TIP125, TIP126, TIP127, PNP

ELECTRICAL CHARACTERISTICS

I

(TC = 25 0 C unle.. otherwise noted)

I

Characteristic

Symbol

Min

Max

60
80
100

-

-

0.5
0.5
0.5

-

-

0.2
0.2
02
2.0

1000
1000

-

-

2.0
4.0

-

2.5

4.0

-

Unit

OFF CHARACTERISTICS
Coliector·Emltter Sustaining Voltage (1)
(lC = 100 mAde, IB = 0)

Collector Cutoff Current
(VCE = 30 Vde, IB = 0)
(VCE = 40 Vde, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB' =80 Vde, IE = 0)
(VCB c 100 Vde, IE = 0)
Emitter Cutoff Current
(VBE ·5.0 Vdc, IC = 0)

VCEO(sus)

TIPl20, TIP125
TIP121, TIP126
TIP122, TlP127

mAde

ICEO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

-

mAde

ICBO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

-

lEBO

ON CHARACTERISTICS (1)
DC Current Gain
(lC = 0.5 Ade, VCE = 3.0 Vde)
(lC = 3.0 Ade, VCE = 3.0 Vde)
Coliector·Emitter Saturation Voltage
(lC = 3.0 Ade, IB = 12 mAde)
(lC = 5.0 Ade, IB = 20 mAde)
Base·Emitter On Voltage
(lC = 3.0 Ade, VCE = 3.0 Vde)

Vde

mAde

-

hFE

VCE(sad

Vde

Vde

VBE(on)

DYNAMIC CHARACTERISTICS
Small-5lgnal CUrrent Gain
(lC = 3.0 Adc, VCE = 4.0 Vde, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TlP125, TIP126. TlP127
TlP120, TlP121. TIP122

-

Ihfel

pF

Cob

-

300
200

-

(1) Pulse Test: Pulse Width..; 300 "s. Duty Cvele ..; 2%.

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

FIGURE 3 - SWITCHING TIMES
5. 0

Vee
v

3.

~30

RS & RC VARIED TO OBTAIN DESIRED CURRENT lEVELS
0,. MUST BE fAST RECOVERY TYPES, e g,

MBD5300 USED ABOVE 18 '" 100 rnA
MS06100 USED BELOW 18 '" 100 mA

::~~-~[J~-----:--]~
V,
approx __

-12V

I

I

tr.tt';;;;1(1 nl
DUTY CYCLE = 1 0%

25~s

Rc
SCOPE

~

V2

o~

1.0

....-

......

,

.l--

.-

.......

'f

O.7

'" O. 5
;::
3

o.
o.2 ~ VCC

51

..- -+

't,.

2. 0

_

r-

'r

.......

30 V
-ICnS = 250
lSI =1~2
o. I;=TJ=25 c- , d @V SE(off)--OV'S-

fortdandtr.OllSdrsconnectetl

andV2=O
ForNPNtesttlrCultrlverseal1palantles

0.07
0.0 5
0.1

<

.....

PNP
NPN

0.2

0.3

0.5 0.7

1.0

2.0

3.0

IC. COLLECTOR CURRENT (AMP)

1-983

5.0 7.0

10

TIP120, TIP121, TIP122, NPN, TlP125,TIP126, TIP127, PNP

FIGURE 4 - THERMAL RESPONSE

~
N
::;

~

o

=
<.>
Z

~

10
07
0%05
5

O. 3
0.2

r-

~

r;;.....

01

~

~ I-

0.2

O. 1

.... ~
Plpkl

tJUL

0.0 71---- DOS

...J

~

0.05
I---- 0.02
:r
.... 0.03
>~ 0.02 i--='
in

~

.....,

z

'"'">-

00 1 ......
001

-

12~~

V

,...

TJlpkl - TC %Plpkl ZOJC(II

DUTY CYCLE, 0 %11112

SljGi E IiLii

11111

01

005

002

4JJCIII %rill ROJC
ROJC % 1.92 0 C/w Max
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
REAO TIME AT "

02

10

05

20
t,

10

50

I I

I I 111111

20

I

100

50

I

I

I I III

200

500

1.0k

TIME (ms)

FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
20
10

10011'

~

'"'

t

>-

ffi
~
G

2.0

1.0

There are two limitations on the power handling abilltv of a
average junction temperature and second breakdown.
Safe operating area curves indicate Ie - VeE limits of the transistor that must be observed for reliable operation; I.e., the transistor
must not be subjected to greater dissipation than the curves indicate.

500",

5.0

:5

~m:l'

'"

i

transistor:

de ....... Sm'

====== J %IS0 C
0

:5 o. 5 ~BONOING WIRE LIMITED

g

The data of Figure 5 is based on TJ(pk) = 150°C; T C is variable
depending on conditions. Second breakdown pulse limits are valid

~THERMALLY

L1MITEO@TC'25 0 C
(SINGLE PULSEI
0,2 _
---SECONO BREAKDOWN L1MITEO
:3
~ 0, 1 ====:CURVES APPLY BELOW RATED VCEO
TIP110, TIPI2S,
0.05
TIP121, TlP126,
TIPI21, TWI27
0.02
1.0
1.0 3.0
S.O 70 10
10
lO
50

for duty cycles to 10% prOVided TJ(pkl

_

< 150°C.

TJ(pkl may be

calculated from the data in Figure 4. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values Jess than the limitations imposed by second breakdown

70

100

VCE, COlLECTOR·EMITTER VOLTAGE (VOLTSI

FIGURE 7 - CAPACITANCE

FIGURE 6 - SMALL-SIGNAL CURRENT GAIN
10,000
5000

-

~ lOO0

~ 2000

>-

~

G
~

lOO

--

F -

1000

50 0
lOO

~

200

;

100

1!l
'"

50

TC - 25 0 C

10
1.0

(

SO

10

20

"' >-

r-r-

Gob

'-..!

50

I ~PLN

-----PNP
- - -NPN
02
OS
1.0

-1.0

'-

G,b

PNP
(

-

0

VCE' 4.0Vde
IC %l.O Ade

r--- (--

J i~

T~ %~5h~
r-

100

SO

100

200

lO
01

500 1000

t, FREQUENCY 1kHz)

10

50

10

VR, REVERSE VOLTAGE IVOlTSI

1-984

20

50

100

TIP120, TIP121, TIP122, NPN, TlP125, TIP126, TIP127, PNP

NPN
TIP120, TIP121, TIP122

I

FIGURE 8 - DC CURRENT GAIN
20,000

20,000

II

i

10,000

'"!z:

10,00 Ol--=-=b7000

TJ

3000
2000

=>

u

u

c

u:;

z 5000

150'C........

y.

V

;;;:

~

-

V

i

V

I
02

01

L
2000

~ 1000

~r-

,/

,

25'C

r-- A

L

o
~ 700
- 500 f==,-55'C

f7Z ~-55'C

500

TJ.150'C........

~ 3000

l'\.

25'C/

1000

300
200

III

V~E; 410 ~

I

VCE· 4.0 V

~ 5000

~

PNP
TIP125, TIP126, TIP127

0.3

0 5 07

300
200
0.1

Y'

V

I0

2.0

3.0

5.0

7.0

10

02

03

0.50710

IC, CO LLECTO R CU RRENT (AMP)

2.0

30

5.0

70 10

Ir COLLECTOR CURRENT (AMP)

FIGURE 9 - COLLECTOR SATURATION REGION

en

30

III

>::;
o

~
~

IC· 2 OA
2.6

r:l:.

'"

>::;
o

,

22

~

\

f-

a;:

~
~ 26

1\
\

'"

,.

~
ti

>

~
8

I\..

r-

1\

\

j

o

1.4

TJ' 25'e

.~

22

~ 18

1.8

11
11
6.0A

4.0 A

::

o

8

J j II
1Ie'lJJ
2.0 A

>::;
o

6.0A

>::;
o

~

Cii 30

TJ·25'C
40A

I'

1.4

ti

1.0

03

0.5

0.7

1.0

2.0

3.0

50

7.0

10

20

30

"

10
0.3

0.5 0.7

10

IB, BASE CURRENT (mA)

20

3.0

5.0

10

7.0

20

30

lA, BASE CURRENT ImAI

FIGURE 10 - "ON" VOLTAGES
30

3. 0
rJL5,Ie

5

'"'"

e:
,,'"
f-

VII

v.v
VBE @VCE· 4 o~-±--

o-++-tVCEls")@ IC 'lB' 250
o5
01

I
02

I
03

-

..........

07

10

V

V

30

50

V

L
0

7.0

10

01

.b::::V-

VBElsatl@leliB - 250

L 1

L1

i

VCEISdtl ~P Ie 18" 250

o5
20

V

L

V

5 V6E@VCE'40V

/'

)

05

V

0

,,;:::. ?'

I 5 VBEli")@ lellB' 250

JL

5

II
0

TJ' 25'C

02

03

05 07

10

I

!

20

30

Ie. COllECTOR CURRENT lAMP)

IC. COLLECTOR CURRENT IAMPI

1-985

I

!
50

I

70

I
10

NPN
TIP140
TIP141
TIP142

PNP
TIP145
TIP146
TIP147

®

MOTOROLA

III
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS

DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
. designed for general-purpose amplifier and low frequency
switching applications.
•

60-100 VOLTS
126 WATTS

Min hFE = 1000 @ IC = 5 A. VCE = 4 V

High DC Current Gain -

• Collector-Emitter Sustaining Voltage -

@ 30 mA

VCEO(sus) = 60 Vdc (Min) - TIP140, TIP145
80 Vdc (Min) - TIP141, TIP146
100 Vdc (Min) - TIP142, TIP147
•

Monolithic Construction with Built-In Base-Emitter Shunt Resistor

MAXIMUM RATINGS
Symbol

TIP140
TIP146

TlP141
TIP146

TIP142
TIP147

Unit

VCEO

60

SO

100

Vdc

Collector-Base Voltage

VCB

60

SO

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

IC

10
15

Adc

Rating
Collector-Emitter Voltage

Collector Current - Continuous
Peak (1)
Base Current -

IB

0.5

Adc

Po

125

Watts

TJ,TsIg

-6510 +150

°c

Continuous

Total DeVice Dissipation

@TC=25°C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal ReSistance, Junction to Case

R9JC

10

°C/W

Thermal Resistance. Case to Ambient

R8JA

357

°C/W

Characteristic

(1) 5

ms. ~10% Duty Cycle

STYLE 1:
. 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DARLINGTON SCHEMATICS

COLLECTOR

NPN
TIPI40
TIP141
TIP142

r------I
:

~

--,I
I

BASEo----r

i

PNP

=s.J;

L- _ _ _ _ _ _ _

I
I
I
I
I
I

__ ...J

EMITTER

COLLECTOR

., " 'lS;
TIP145
TIP146

r------~

I

--,I
I

I
BASE o--t-<

.

j =S.Ok =40
IL- _ _ _ _ _ _ _

I
I

~ I

__ ...J

EMITTER

1-986

I
I
I

MILLIMETERS
DIM MIN MAX
A 20.32 21.08
8 15.49 15.90
5.08
C 4.19
0
1.02
1.65
1.65
E 1.35
G
5.21
5.12
H 2.41
3.20
J
0.38
0.64
K 12.70 15.49
L 15.88 16.51
12.19 12.70
N
Q
3.94
4.19

INCHES
MIN MAX
0.800 0.830
0.610 0.626
0.165 0.200
0.040 0.065
0.053 0.065
0.205 0.225
0.095 0.126
0,015 0.025
0.500 0.610
0.625 0.650
0.480 0.500
0.155 0.165

CASE 340-01
TO-21BAC

TIP140, TIP141, TIP142 NPN, TIP145, TIP146, TIP147 PNP

ELECTRICAL CHARACTERISTICS IT C = 25°C unless otherwise noted)
Characteristic

OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)

Vdc

VCEOlsus)

(Ie = 30 rnA, 18 = 0)

TIPI40, TIP145
TIPI41, TlP146
TIPI42, TIP147

-

-

-

-

-

-

2.0
2.0
2.0

-

-

1.0
1.0
1.0

60
80
100

Collector Cutoff Current

rnA

ICED

(VCE = 30 Vdc. IB = 0)
IVeE = 40 Vdc, IB = 0)
IVCE = 50 Vdc, 18 = 0)

TIP140, TlP145
TIPI41, TIP146
TIPI42, TIP147

Collector Cutoff Current

mA

ICBO
TlP140, TlP145
TIPI41, TIP146
TIPI42, TIP147

IVCB = 60 V, IE = 0)
IVCB = 80 V, IE = 0)
IVCB = 100 V, IE = 0)
Emitter Cutoff Current VSE

= 5.0

V

lEBO

2.0

mA

ON CHARACTERISTICS 11)
DC Current Gain

-

hFE
1000
500

Ilc = 5.0 A, VCE = 4.0 V)
Ilc = lOA. VeE = 4.0 V)
Collector-Emitter Saturation Voltage

-

2.0
3.0
3.5

Vdc

Vdc

VCElsat)

-

VBElsat)

-

-

VBElon)

-

-

3.0

Vdc

td

-

0.15

-

",s

(lc = 5.0A, IB = 10 mAl
(lc = lOA, IB = 40 mAl

-

Base-Emitter Saturation Voltage

-

IIC = lOA, IB = 40 mAl
Base-Emitter On Voltage

Ilc = lOA, VCE = 4.0 Vdc)

SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)

Delay Time

IVCC = 30 V, IC = 5.0 A,

Rise Time

tr

IB = 20 mA. Duty Cycle';; 2 0%,

Storage Time

ts

IBI = IB2, AC & AB Varied, TJ = 25°C)

Fall Time

tf

0.55
2.5

2.5

",s
",s
~s

(1) Pulse Test Pulse Width = 300 IJ,s, Duty Cycle -s;; 20%

FIGURE 1 - SWITCHING TIMES TEST CIRCUIT

FIGURE 2 - SWITCHING TIMES
0

t=

PNP
~
NPN j - - f-

Vee
-30Y
RS & RC VARIED TO OBTAIN DESIRED CURRENT lEVELS
01. MUST BE FAST RECOVERY TYPES, e.g.,
MBD5300 USED ABOVE 18 '" 100 rnA
MS06100 USED BELOW 18 '" 100 mA

0
SCOPE

0 .......

V2

~:;~-~-~~~-_-C1~
VI

0--

'~:~~--I

I

t,,1f<:10ns

Is

He

~ 10

~

;o.c;;

If

r-..

;::

51

-

0.5

-?-

~ b-t::;

~ r-

I,
I

I

,_

N@ VBEloff)' 0

25"
For 1d and tr, III
and Vz "'0

IS

02

disconnected

DUTY CYCLE" 1 0%

o1
02

For NPN test circuit reverse diode and voltage polarities.

~

~~
05

10

3.0

50

Ie, COLLECTOR CURRENT (AMP)

1-987

VCC'30VIclIB 250
IBI 182 25°C 0

Tr
10

0

20

TIP140, TIP141, TIP142 NPN, TIP145, TIP146, TIP147 PNP

IIIJ

TYPICAL CHARACTERISTICS

NPN

PNP

TIP140. TIP141. TIP142

TIP145. TIP146. TIP147

FIGURE 3 - DC CURRENT GAIN versus COLLECTOR CURRENT

20.000

TJ - 150°C
500 a

---- ~C/VI-"
V

:/

V
0

a

vV'

/'

V

~

10.000

f-

........

100°C

T"'-

~

i"'

z

~ 7000

!

-55°C

./"

TJ -150°C

~

100°C

20°C

>-

V

5000

V

V

..:.

~ 2000

V

V

300 o

g

vV

l"-55°C

/'"

V r-

c:-

........

i"'t:-

\-,1-""

50 a

VCE-40V

30 0
05

1.0
2.0
3.0 4 a 5.0
IC. COLLECTOR CURRENT lAMPS)

70

[\

VCE; 4.0 V

100o/v
0.5
07

10

10

20
3.0 40 50
IC. COLLECTOR CURRENT lAMPS)

7.0

10

FIGURE 4 - COLLECTOR-EMITTER SATURATION VOLTAGE

.0

.0

0

0

0

IC; IDA. IS; 4.0 mA

"-

"I

I--

IC; 50 A. IS; 10 mA

I

r--

0

J0

0
~ 10AjiS
7
5

1

r--

J

-r-- r-

o
8
~
"
1M 18
TJ. JUNCTION TEMPERATURE 1°C)

1~

5
1"

d:::::t::

IC ;

~ 0 A. I~; 10 ~A

IC

IDA. IS ; 2.0 mA- I - -

--....I.

7

_L

-25

IC; 10 A.IS; 4.0 mA-: t--

I-

2.0 mA I - -

'"'1-50

....

::t~- r--

~

I

- 50

25

0
25
50
75 100 125
TJ. JUNCTION TEMPERATURE 1°C)

150

175

FIGURE 5 - BASE-EMITTER VOLTAGE

4.0

4.0

;;; 3.6
!::;

'"
~

;;; 36

~

VCE; 4.0 V
3.2

32

~

2.8

'"

24

'"

'">

>

'"

~

2.4

ai

2.0

'"'"

1.6

~

~

1.2
0.8
-75

-- --- --

--

-25

~
15

IC; 10 A

-I-

-

"-

-

-

5~A-

20

~

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