1984_TI_MOS_Memory_Data_Book 1984 TI MOS Memory Data Book
User Manual: 1984_TI_MOS_Memory_Data_Book
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SMYOOO2
.
,MOS Memory
Data Book
1984
II
I
III
\'
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\/ Commercial and Military
, :\ Specifications '
1'/
!
.
.Jf
TEXAS
INSTRUMENTS
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide _
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM Devices
Static RAM and Memory Support Devices
Applications Information
Logic Symbols
Mechanical Data
MOS Memory
Data Book
1984
Cotntnercial and Military
Specifications
SMYD002
o184-464PP-142M
TEXAS
INSTRUMENTS
Printed in U.S.A.
IMPORTANT NOTICE
Texas Instruments reserves the right to make changes at-any time in
order to improve design and to supply the best product possible.
Texas Instruments assumes no responsibility for infringement of patents
or rights of others based on Texas Instruments applications assistance
or product specifications, since TI does not possess full access to data
concerning the use or applications of customer's products. TI also
assumes no responsibility for customer product designs.
Copyright © 1984 by Texas Instruments Incorporated
Alphanumeric Index, Table of Contents, Selection ,Guide
Interchangeability Guide . .
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM· Devices
Static RAM and Memory Support· Devices
Applications Information
Logic Symbols
Mechanical Data
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ALPHANUMERIC INDEX TO DATA SHEETS
Page
SMJ2516
SMJ2532
SMJ2564
SMJ2708
SMJ27L08
SMJ4164
SMJ4416 ....................
SMJ5517 ....................
TM4164EC4 ..................
TM4164EL9 ..................
TM4164FL8 ..................
TMS2114 ....................
TMS2114L ...................
TMS2150 ....................
TMS2516 ....................
TMS2532 ....................
TMS2564 ....................
TMS2708 ....................
TMS27L08 ...................
TMS2732A ...................
6-1
6-11
6-21
6-31
6-31
4-39
4-85
8-25
5-1
5-5
5-9
8-1
8-1
8-7
6-1
6-11
6-21
6-31
6-31
6-47
Page
TMS2764
TMS4016
TMS4044
TMS40L44
TMS4116
TMS4161
TMS4164
TMS4256
TMS4257
TMS4416
TMS4464
TMS4500A
TMS4664
TMS4732
TMS4764
TMS4964
TMS27128
TMS47128
TMS47256
.................. .
.................. .
.................. .
................. .
.................. .
.................. .
.................. .
.................. .
................. .
................ ..
................. .
6-53
8-13
8-19
8-19
4-1
4-15
4-39
4-63
4-63
4-85
4-107
4-125
7-1
7-7
7-13
7-19
6-61
7-27
7-37
Q)
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Q)
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eCD
....o
TMS2732A
TMS2764
TMS27128
5V
5V
5V
32,768-bit
65,536-bit
131,072-bit
(4Kx8) .......................
(8Kx8) .......................
(16K x 8) ......................
6-47
6-53
6-61
ROM DEVICES
TMS4664
TMS4732
TMS4764
TMS4964
TMS47128
TMS47256
5V
5V
5V
5V
5V
5V
65,536-bit
32,768-bit
65,536-bit
65,536-bit
131,072-bit
262,144-bit
(8Kx8) .......................
(4Kx8) .................... ...
(8Kx8) ......
..............
(8Kx8) .......................
(16K x8) ......................
(32Kx8) ......................
7-1
7-7
7-13
7-19
7-27
7-37
'
~
STATIC RAM and MEMORY SUPPORT DEVICES
TMS2114
4,096-bit
(1 K x 4) ..............................
TMS2114L
4,096-bit
(1 K x 4) ..............................
Cache Address Comparator ............................
TMS2150
16,384-bit
(2K x 8) ..............................
TMS4016
4,096-bit
(4K x 1) ..............................
TMS4044
4,096-bit
(4K x 1) ..............................
TMS40L44
16,384-bit
(2K x 8) ..............................
SMJ5517
.
.
.
.
.
.
.
APPLICATIONS INFORMATION
64K Dynamic RAM Refresh Analysis System Design Considerations .......... .
256-Cycle Refresh Conversion ...................................... .
TMS4164A and TMS4416 Input Diode Protection ....................... .
TMS4164 and TMS4416 Interlock Clock .............................. .
Introduction to Surface Mount Technology ............................ .
TTL Drivers for TMS4416-1 5 ...................................... .
TMS4416/7220 Graphics ......................................... .
TMS4416/TMS4500A Evaluation Board
.............................. .
TMS4500A ALE and ACX Timing ................................... .
TMS4500A DRAM Controller Configured for the TMS99000 Series
16-Bit Microprocessors ........................................ .
TMS4500A/8088 Interface ........................................ .
TMS4500A/MC68000 Interface .................................... .
An Introduction to Cache Memory Systems and the TMS21 50 .............. .
High Density ROMs In Consumer Game Systems ........................ .
8-1
8-1
8-7
8-13
8-19
8-19
8-25
9-1
9-3
9-7
9-11
9-15
9-25
9-31
9-39
9-45
9-51
9-63
9-69
9-85
9-93
LOGIC SYMBOLS
Explanation of New Logic Symbols for Memories
10-1
MECHANICAL DATA
11-1
1-4
.................................................
MOS
LSI
RAMs, ROMs, EPROMs
SELECTION GUIDE
WORDS
BITS PER WORD
1
4
8
Q)
(8K)
(4K)
1K
"'C
SRAMs
EPROMs
'S
TMS2114
TMS2114L
TMS2708
TMS27L08
(!J
c
o
SMJ2708
'';:;
SMJ27L08
SRAMs
2K
(.)
Q)
(16K)
EPROMs
TMS4016
TMS2516
SMJ5517
SMJ2516
TMS2716
Q)
en
...u)
...
C
Q)
C
TMS2532
o
U
o
SMJ2532
Q)
(4K)
4K
(32K)
SRAMs
ROMs
TMS4044
TMS4732
EPROMs
TMS40L44
TMS2732A
....
:cCO
...
(64K)
ROMs
8K
TMS4664
><
EPROMs
Q)
TMS2564
"'C
C
TMS4764
SMJ2564
TMS4964
TMS2764
(.)
''::
Q)
(16K)
16K
(64K)
E
::l
C
CO
(128K)
DRAMs
DRAMs
ROMs
TMS4116
TMS4416
TMS47128
EPROMs
TMS27128
SMJ4416
.r:.
c.
:;a:
(256K)
32K
ROMs
TMS47256
(64K)
64K
(256K)
DRAMs
DRAMs
TMS4161
TMS4464
TMS4164
SMJ4164
(256K)
256K
DRAMs
TMS4256
TMS4257
(Numbers in parenthesis indicate overall complexity.)
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
1-5
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1-6
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM Devices
Static RAM and Memory Support. Devices
Applications Information
Logic Symbols
Mechanical Data
...S"
.
(1)
(")
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Q)
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INTERCHANGEABILITY GUIDE
PART 1 - ALTERNATE VENDOR PART NUMBERING (EXAMPLES)
TEXAS INSTRUMENTS (TI)
EXAMPLE:
TMS
-45
2114L
N
L
CI)
(J.g, )
TMS Commercial MaS
-
Max Access
4 45 ns -20200 ns
SMJ Military MaS
-
5
55 ns -25250 ns
J
-
7
70 ns -30300 ns
FP Plastic Chip Carrier
Cerpak/Cerdip
"C
·S
~
>-
E
~
-40°C to ao°c
L ooC to 70°C
JD Side Braze
M -55°C to 125°C
-10 100 ns -35350 ns
MC Chip-on-Board
S
-12 120 ns .-45450 ns
N Plastic DIP
:cCO
CI)
en
t:
- 55°C to 100°C
CO
..r:::
....CJ
-15 150 ns
....
CI)
t Inclusion of an "L" in the product identification indicates the device operates at low power.
..5
ADVANCED MICRO DEVICES (AMD)
Am
L
91
28
-15
Max Access
90 DRAM
-70
70 ns
91 SRAM
-10
100 ns
92 ROM
-15
150 ns
17/27 EPROM
-20
200 ns
AMERICAN MICROSYSTEMS, INC. (AMI)
S
A
2364
Max Access
A
350 ns
B
250 ns
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
2-1
INTERCHANGEABILITY GUIDE
ELECTRONIC ARRAYS, INC. (EA)
~
EA
A
:r....
..
:r
(1)
27XX EPROM
()
Other ROM
II)
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EMM/SEMI
;:;:
-<
4014
A
t
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(1)
Speed Range )
Max Access
A Slow
8
Fast
FAIRCHILD
F
3528
-A
I.. .)
( s...
Max Access
- 1 (or Al Slowest
-2 (or BI
-3
-4
-5 Fastest
t May be omitted.
*Inclusion of an "L" indicates low power version.
2-2
TEXAS
INSlRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
INTERCHANGEABILITY GUIDE
FUJITSU
MB
8264
-10
A
tn..)
. (s....
Q)
"'C
Max Access
·S
MB Fujitsu
-10
100 ns
C!J
MBM Industry Standard. Prefix
-12
120 ns
-15
150 ns
>
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Q)
C)
c
HITACHI
CO
.
...
.s::.
(,)
Q)
~
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..::.3..
.5
Max Access
-1 Fastest
HM RAM
-2
-3
-4 Slowest
HN ROM
INMOS
IMS
-15
2600
Max Access
-45
45 ns
-55
-10
100 ns
-12
120 ns
-15
150 ns
55 ns
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
2-3
INTERCHANGEABILITY GUIDE
INTEL
...CD
:::l
...
Max Access
-1 Fastest
::r
-2
-3
-4
-5
C')
Dl
:::l
CC
CD
Dl
g
-6
Slowest
;:;'
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c
INTERSIL/AMS
c:
CD
IM7
Max Access
- 1 (- 111 Fastest
-2 (-121
-3
-4
MOSTEK
MK
4564
-15
(Spa",L.,)
Max Access
-55 55 ns
4250
-70 70 ns -5300
-90 90 ns - 6350
1 120ns -15150
2 150 ns -20 200
3200ns t -25250
ns
ns
ns
ns:l:
ns:l:
ns :l:
t 550 ns for SRAMs and ROMs
t DRAMs
2-4
TEXAS.,
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
Slowest
INTERCHANGEABILITY GUIDE
MOTOROLA
-15
MCM
-t
( IC Memory Prefix)
Q)
Max Access
-10
-12
-15
. -20
-25
-30
-45
t Inclusion of an "L" indicates low power version.
100 ns
120 ns
150 ns
200 ns
250 ns
300 ns
450 ns
"C
·S
~
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Q)
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Q)
~
.5
NATIONAL SEMICONDUCTOR
4164
-15
•
Max Access
-12 120 ns
-15 150 ns.
-20 200 ns
OKI SEMICONDUCTOR (OKI)
MSM
3764
-20
Max Access
-12 120 ns
-15 150 ns
-20 200 ns
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
2-5
INTERCHANGEABILITY GUIDE
NIPPON ELECTRIC CORPORATION (NEC)
JLPD
-2
A
4164
5"
.....
.,
Max
-0
-1
-2
-3
C
(')
:r
m
~
CO
C
m
g;
;:;"
-<
SIGNETICS
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c
c:
C
23128
-25
Max
-20
-25
-30
-45
Access
200 ns
250ns
300 ns
450 ns
SYNERTEK
Sy
-4
2150
Max
-2
-3
-4
-5
Access
200 ns
300 ns
45 ns
55 ns
"Inclusion of an alpha character indicates a device modification.
2-6
TEXAS
.
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
Access
200 ns
250 ns
100 ns
150 ns
INTERCHANGEABILITY GUIDE
TOSHIBA
TMM
-3
4164
(5."'1....,)
Max Access
-1 Fastest
-2
-3
-4
-5
Slowest
CD
"C
'S
C!)
>
:l:
:sca
CD
C)
C
ca
.c
(,)
VLSI TECHNOLOGY
...
....CD
VT
4500A
-15
..5
(Sf.JR..•' )
Max
-15
-20
-25
Access
150 ns
200 ns
250 ns
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
2-7
INTERCHANGEABILITY GUIDE
PART II - SECOND SOURCES*
"Based on available published data. (Official second sourcing agreements not necessarily implied.)
All devices listed operate over the OOC to 70°C temperature range.
DYNAMIC RAMS
5'
....
CD
ORGANIZATION
...
16Kx 1
:::r
(3 Supply)
(')
MAX ACCESS
Max Access
=
250 ns
VENDOR
TI
TI
Q)
.:::J
CC
CD
SECOND SOURCES
AMD
Am9016
Fairchild
F4116
Fujitsu
MB8116
HM4716A
IM4116
Hitachi
Intersil
Q)
g
PART NUMBER
TMS4116
==t'
ITT
ITT4116
Mitsubishi
M5K4116
C)
Mostek
MK4116
MCM4116B
is:
Motorola
National
NEC
MM5290
/LPD416
Toshiba
TMM416
-<
r:::
CD
64Kx 1
Max Access
=
200 ns
TMS4164 1
TI
(5 V)
Fairchild
F4164
Fujitsu
Hitachi
MB8264A
HM4864
IMS2600 t
INMOS
Micron Tech.
2164
MT4264 t
Mitsubishi
M5K4164
Mostek
Motorola
National
MK4564
MCM6665
NEC
/LPD4164
Intel
16Kx4
(5 V)
256K x 1
(5 V)
Max Access
Max Access
=
=
200 ns
200 ns
OKI
MSM3764
Toshiba
TMM4164
TMS4416
Fujitsu
Hitachi
MB81416
INMOS
IMS2620
Fujitsu
TMS4256/TMS4257
MB81257/MB81256
Hitachi
HM50257
Mitsubishi
Motorola
MSM4256
NEC
/LPD41256~PD41257
OKI
Toshiba
MSM37256
TMM41256
Western Electric
WCM41256
TI
TI
tThese devices have a 256 cycle. 4 ms refresh scheme. All others refresh in 2 ms.
2-8
NMC4164 t
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
HM48416AP
MCM6256
INTERCHANGEABILITY GUIDE
STATIC RAMS
ORGANIZATION
4Kx1
(5 V)
VENDOR
MAX ACCESS
Max Access
=
TI
450 ns
SECOND SOURCES
TI
AMD
Intersil
IM7141/IM7141L
Intel
2141/2141L
National SC
MM2141
Mitsubishi
M5T4044
Mostek
NEC
MK4104
I'PD4104
SY2141/SY2141 L
Synertek
1Kx4
(5 V)
2Kx8
(5 V)
Max Access
Max Access
=
=
450 ns
250 ns
PART NUMBER
TMS4044/TMS40L44
Am4044
TI
TMS2114/TMS2114L
AMD
Am9114E/91L14E
EA
EMM/SEMI
EA2114L
2114
Fairchild
2114
Hitachi
HM472114A
Intel
2114A/2114AL
Mitsubishi
M5L2114L
Motorola
MCM2114/MCM21L14
MM2114/MM21 L 14
National SC
NEC
I'PD2114/I'PD2114L
OKI
Synertek
MSM2114/MSM2114L
SY2114/SY2114A
TI
TMS4016
Fairchild
Fujitsu
F3528
MB8128
Mitsubishi
M58725
Mostek
OKI
MK4802
Toshiba
TMM2016
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
MSM2128
2-9
INTERCHANGEABILITY GUIDE
EPROMS
ORGANIZATION
1Kx8
(3 Supply)
MAX ACCESS
Max Access
2KxS
(3 Supply)
Max Access
2Kx8
(5 V)
Max Access
=
=
450 ns
450 ns
TI
VENDOR
SECOND SOURCES
TI
AMD
TMS270S/TMS27LOS
270S
Fairchild
Fujitsu
F270S
MBS518
Intel
Motorola
National SC
OKI
2708/270SL
MCM270S
MM270S
MSM270S
TI
TMS2716
TMS2716/TMS27 A 16
Motorola
=
450 ns
TI
Fujitsu
Hitachi
TMS2516
2716
MBM2716
HN462716
Intel
Mitsubishi
2716
M5L2716
Mostek
Motorola
National
NEC
OKI
Toshiba
MK2716
MCM2716/MCM27L 16
AMD
4KxS
(5 V)
Max Access
4KxS
(5 V)
Max Access
=
450 ns
MM2716
/LPD2716
MSM2716
TMM323
TMS2532
HN62532
MCM2532/MCM25L32
TI
Hitachi
Motorola
National
=
450 ns
TI
SKxS
(5 V)
Max Access
=
450 ns
TI
SKxS
(5 V)
Max Access
=
450 ns
TI
/
Am2732
F2732
MBM2732A
HN462732
2732A
NEC
OKI
Toshiba
Motorola.
/LPD2732
MSM2732
TMM2732
TMS2564
MCM68764
AMD
Fairchild
Fujitsu
TMS2764
Am2764
2764
MBM2764
OKI
Max Access
=
250 ns
TI
Fujitsu
Intel
2-10
MM2532
TMS2732A
AMD
Fairchild
Fujitsu
Hitachi
Intel
Mitsubishi
Hitachi
Intel
Mitsubishi
16Kx8
(5 V)
PART NUMBER
TEXAS
INSlRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
M5L2732
HN4S2764
2764
M5L2764
MSM2764A
TMS2712S
MBM27128
27128
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic .RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices . .
ROM Devices
Static RAM and Memory Support Devices
Application$ Information . .
Logic Symbols
Mechanical Data
G)
5"
en
en
D)
-3·
~
-<
-t
:r
CQ
o
o
:s
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CD
:s
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-..
en
=....en
:s
en
o
CII
CII
CD
CD
~
c
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C
CD
GLOSSARY fTIMING CONVENTIONS/DATA SHEET STRUCTURE
PART 1- GENERAL CONCEPTS AND TYPES OF MEMORIES
Address - Any given memory location in which data can be stored or from which it can be retrieved.
Automatic Chip-Select/Power Down - (see Chip Enable Input)
Bit - Contraction of Binary digiT, i.e., a 1 or a 0; in electrical terms the value of a bit may be represented by the presence or
absence of charge, voltage, or current.
Byte - A word of 8 bits (see word)
Chip Enable Input - A control input to an integrated circuit that when active permits operation of the integrated circuit for input, internal transfer, manipulation, refreshing, andlor output of data and when inactive causes the integrated .circuit to
be in a reduced power standby mode.
Chip Select Input - Chip select inputs are gating inputs that control the input to and output from the memory. They may be
of two kinds:
1.
Synchronous - Clockedllatched with the memory clock. Affects the inputs and outputs for the duration of
that memory cycle.
2.
Asynchronous - Has direct asynchronous control of inputs and outputs. In the read mode, an asynchronous chip select functions like an output enable.
Column Address Strobe (CAS) - A clock used in dynamic RAMs to control the input of column addresses. It can be active
high (CAS) or active low (CAS).
Data - Any information stored or retrieved from a memory device.
Dynamic (Read/Write) Memory (DRAM) - A readlwrite memory in which the cells require the repetitive application of control signals in order to retain the stored data.
NOTES:
1.
The words "read/write" may be omitted from the term when no misunderstanding will result.
2.
Such repetitive application of the control signals is normally called a refresh operation.
3.
A dynamic memory may use static addressing or sensing circuits.
4.
This definition applies whether the control Signals are generated inside or outside the integrated circuit.
Electrically Alterable Read-Only Memory (EAROM) - A nonvolatile memory that can be field-programmed like a PROM or
EPROM, but that can be electrically erased by a combination of electrical signals at its inputs.
Erasable and Programmable Read-Only Memory (EPROM)/Reprogrammable Read-Only Memory - A field-programmable
read-only memory that can have the data content of each memory cell altered more than once.
Erase - Typically associated with EPROMs and EAROMs. The procedure whereby programmed data is removed and the .
device returns to its unprogrammed state.
Field-Programmable Read-Only Memory - A read-only memory that after being manufactured, can have the data content of
each memory cell altered.
Fixed Memory - A common term for ROMs, EPROMs, EAROMs, etc., containing data that is not normally changed. A more
precise term for EPROMs and EAROMs is nonvolatile since their data may be easily changed.
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Fully Static RAM - In a fully static RAM, the periphery as well as the memory array is fully static. The periphery is thus
always active and ready to respond to input changes without the need for clocks. There is no precharge required for
static periphery.
K - When used in the context of specifying a given number of bits of information, 1 K
=
2 10
=
1024 bits. Thus,
64K = 64 X 1024 = 65,536 bits.
Large-Scale Integration (LSI) - The description of any IC technology that enables condensing more than 100 gates onto a
single chip.
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GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
Mask-Programmed Read-Only Memory - A read-only memory in which the data content of each cell is determined during
manufacture by the use of a mask. the data content thereafter being unalterable.
Memory - A medium capable of storage of information from which the information can be retrieved.
Memory Cell - The smallest subdivision of a memory into which a unit of data has been or can be entered. in which it is or
can be stored. and from which it can be retrieved.
Metal-Oxide Semiconductor (MOS) - The technology involving photolithographic layering of metal and oxide to produce a
semiconductor device.
NMOS - A type of MOS technology in which the basic conduction mechanism is governed by electrons. (Short for
N-channel MOS)
Nonvolatile Memory - A memory in which the data content is maintained whether the power supply is connected or not.
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Output Enable - A control input that. when true. permits data to appear at the memory output. and when false. causes the
output to assume a high-impedance state. (See also chip select)
PMOS - A type of MOS technology in which the basic conduction mechanism is governed by holes. (Short for P-channel
MOS)
3'
Parallel Access - A feature of a memory by which all the bits of a byte or word are entered simultaneously at several inputs
or retrieved simultaneously from several outputs.
CO
Power Down - A mode of a memory device during which the device is operating in a low-power or standby mode. Normally
read or write operations of the memory are not possible under this condition.
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Program - Typically associated with EPROM memories. the procedure whereby logical O's (or "s) are stored into various
desired locations in a previously erased device.
Program Enable - An input signal that when true. puts a programmable memory device into the program mode .
C
Programmable Read-Only Memory (PROM) - A memory that permits access to any of its address locations in any desired sequence with similar access time to each location.
The term as commonly used denotes a read/write memory.
NOTE:
Q)
Read - A memory operation whereby data is output from a desired address location.
Q)
tJ)
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Q)
...
...
c
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Q)
Read-On/y Memory (ROM) - A memory in which the contents are not intended to be altered during normal operation.
NOTE:
Unless otherwise qualified. the term ~'read-only memory" implies that the content is determined by its
structure and is unalterable .
~
ReadIWrite Memory - A memory in which each cell may be selected by applying appropriate electrical input signals and the
stored data may be either (a) sensed at appropriate output terminals. or (b) changed in response to other similar electrical input signals.
~
Row Address Strobe (RAS) - A clock used in dynamic RAMs to control the input of the row addressed. It can be active high
(RAS) or active low (RAS).
tJ)
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Scaled-MOS (SMOS) - MOS technology under which the device is scaled down in size in three dimensions and in operating
voltages allowing improved performance.
Semi-Static (Quasi-Static, Pseudo-Static) RAM - In a semi-static RAM. the periphery is clock-activated (i.e .• dynamic).
Thus the periphery is inactive until clocked. and only one memory cycle is permitted per clock. The peripheral circuitry
must be allowed to reset after each active memory cycle for a minimum precharge time. No refresh is required.
Serial Access - A feature of a memory by which all the bits are entered sequentially at a single input or retrieved sequentially
form a single output.
Static RAM (SRAM) - A read/write random-access device within which information is stored as latched voltage levels. The
memory cell is a static latch that retains data as long as power is applied to the memory array. No refresh is required.
The type of periphery circuitry sub-categorizes static RAMs.
3-2
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GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
Very-Large-Scale Integration (VLS!) - The description of any IC technology that is much more complex than large-scale integration (LSI), and involves a much higher equivalent gate count. At this time an exact definition including a minimum
gate count has not been standardized by JEDEC or the IEEE.
Volatile Memory - A memory in which the data content is lost when power supplied is disconnected.
Word - A series of one or more bits that occupy a given address location and that can be stored and retrieved in parallel.
Write - A memory operation whereby data is written into a desired address location.
Write Enable - A control signal that when true causes the memory to assume the write mode, and when false causes it to
assume the read mode.
PART 11- OPERATING CONDITIONS AND CHARACTERISTICS (INCLUDING LETTER SYMBOLS)
Capacitance
.
...
.....
Q)
The inherent capacitance on every pin, which can vary with various inputs and outputs.
::s
(.)
::s
Example symbology:
Ci
Input capacitance
Co
Output capacitance
Ci(D)
Input capacitance, data input
...
CJ)
Q)
Q)
..c:
Current
CJ)
High-level input current, IIH
The current into an input when a high-level voltage is applied-to that input.
High-level output current, 10H
The current into * an output with input conditions applied that according to the product specification will establish a·
hig!;l level at the output.
Low-level input current, IlL
The current into an input when a low-level voltage is applied to that input.
Low-level output current, 10L
The current into * an output with input conditions applied that according to the product specification will establish a
low level at the output.
Off-state Ihigh-impedance-state) output current lof a three-state output), 10Z
The current into * an output having three-state capability with input conditions applied that according to the product
specification will establish the high-impedance state at the output.
Short-circuit output current, lOS
The current into * an output when the output is short-circuited to ground lor other specified potential) with input conditions applied to establish the output logic level farthest from ground potential (or other specified potential).
...
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Supply current IBB' ICC, 100, Ipp
The current into, respectively, the VBB, VCC, VDD, Vpp supply terminals.
Operating Free-Air Temperature
The temperature (T A) range over which the device will operate and meet the specified electrical characteristics.
Operating Case Temperature
The case temperature ITC) range over which the device will operate and meet the specified electrical characteristics.
" Current out of a terminal is given as a negative value.
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GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
Voltage
High-level input voltage, VIH
An input voltage within the more positive (less negative) of the two ranges of values used to represent the binary
variables.
NOTE:
A minimum is specified that is the least positive value of high-level input voltage for which operation of the
logic element within specification limits is guaranteed.
High-level output voltage, VOH
The voltage at an output terminal with input conditions applied that according to the product specification will
establish a high level at the output.
Low-level input voltage, VIL
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An input voltage level within the less positive (more negative) of the two ranges of values used to represent the binary
variables.
NOTE:
A maximum is specified that is the most positive value of low-level input voltage for which operation of the
logic element within specification limits is guaranteed .
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Low-level output voltage, VOL
5'
The voltage at an output terminal with input conditions applied that according to the product specification will
establish a low level at the output.
o
Supply Voltages, VBB, Vee, Vee, Vpp
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The voltages supplied to the corresponding voltage pins that are required for the device to function. From one to four of
these supplies may be necessary, along with ground, VSS.
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Time Intervals
New or revised data sheets in this book use letter symbols in accordance with standards recently adopted by JEOEC,
the IEEE, and the IEC. Two basic forms are used. The first form is usually used in this book when intervals can easily be
classified as access, cycle, disable, enable, hold, refresh, setup, transition, or valid times and for pulse durations. The
second form can be used generally but in this book is used primarily for time intervals not easily classifiable. The second (unclassified) form will be described first. Since some manufacturers use this form for all time intervals, symbols
in the unclassified form are given with the examples for most of the classified time intervals.
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Unclassified time intervals
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Generalized letter symbols can be used to identify almost any time interval without classifying it using traditional or
contrived definitions. Symbols for unclassified time intervals identify two signal events listed in from-to sequence using the format:
r+
C
(')
r+
.,C
R
tAB-C~
Subscripts A and C indicate the names of the signals for which changes of state or level or establishment of state or
level constitute signal events assumed to occur first and last, respectively, that is, at the beginning and end of the time
interval. Every effort is made to keep the A and C subscript length down to one letter, if possible (e.g., R for RAS and C
for CAS of TMS 4116).
Subscripts Band 0 indicate the direction of the transitions and/or the final states or levels of the signals represented by
A and C, respectively. One or two of the following is used:
H
L
V
X
Z
3-4
= high or transition to high
= low or transition to low
= a valid steady-state level
= unknown, changing, or "don't care" level
= high-impedance (off) state
TEXAS INSTRUMENTS
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GLOSSARY!TIMING CONVENTIONS/DATA SHEET STRUCTURE
The hyphen between the Band C subscripts is omitted when no confusion is likely to occur.
For examples of symbols of this type, see TMS 4116 (e.g., tpLCU.
Classified time Intervals (general comments, specific times follow)
Because of the information contained in the definitions, frequently the identification of one or both of the two signal
events that begin and end the intervals can be significantly shortened compared to the unclassified forms. For example, it is not necessary to indicate in the symbol that an access time ends with valid data at the output. However, if
both signals are named (e.g., in a hold time), the from-to sequence is maintained.
Access time
The time interval between the application of a specific input pulse and the availability of valid signals at an output.
Example symbology:
Classified
talA)·
tatS), ta(CS)
Unclassified
Description
Access time from address
Access time from chip select (low)
tAVOV
tSLOV
Cycle time
...
The time interval between the start and end of a cycle.
.c
NOTE:
The cycle time is the actual time interval between two signal events and is determined by the system in
which the digital circuit operates. A minimum value is specified that is the shortest interval that must be
allowed for the digital circuit to perform a specified function (e.g., read, write, etc.) correctly.
Unclassified
Description
tc(RI, tc(rd)
tc(WI
tAVAV(R)
tAVAV(W)
Read cycle time
Write cycle time
R is usually used as the abbreviation for "read"; however, in the case of dynamic memories, "rd" is used
to permit R to stand for RAS.
~
~
C
The time interval between the specified reference points on the input and output voltage waveforms, with the threestate output changing from either of the defined active levels (high or lowl to a high-impedance (offl state.
Example symbology:
Unclassified
Description
Output disable time after chip select (high)
Output disable time after write enable (low)
tSHOZ
tWLOZ
o
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C
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c
Disable time (of a three-state output)
tdis(S)
tdis(W)
...
C
Classified
Classified
en
t /)
Example symbology:
NOTE:
(1)
(1)
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t/)
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These symbols supersede the older forms tpvz or tpXZ.
Enable time (of a three-state outputl
The time interval between the specified reference points on the input and output voltage waveforms, with the threestate output changing from a high-impedance (off) state to either of the defined active levels (high or low).
NOTE:
For memories these intervals are often classified as access times.
Example symbology:
Classified
Unclassified
ten(SL)
tSLOV
Description
Output enable time after chip select low
These symbols supercede the older form tpZV.
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GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
Hold time
The time interval during which a signal is retained at a specified input terminal after an active transition occurs at
another specified input terminal.
NOTES:
1.
2.
The hold time is the actual time interval between two signal events and is determined by the system
in which the digital circuit operates. A minimum value is specified that is the shortest interval for
which correct operation of the digital circuit is guaranteed.
The hold time may have a negative value in which case the minimum limit defines the longest interval
(between the release of the signal and the active transition) for which correct operation of the digital
circuit is guaranteed.
Example symbology:
Classified
Unclassified
Description
th(D)
th(RHrd)
th(CHrd)
th(CLCA)
th(RLCA)
th(RA)
tWHDX
tRHWH
tCHWH
Data hold time (after write high)
Read (write enable high) hold time after RAS high)
Read (write enable high) hold time after CAS high)
Column address hold time after CAS low
Column address hold time after RAS lew
Row address hold time (after RAS low)
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tCL~CAX
tRL-CAX
tRL-RAX
These last three symbols supersede the older forms:
n
NEW FORM
OLD FORM
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th(CLCA)
th(RLCA)
th(RA)
th(ACl)
th(ARL)
th(AR)
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NOTE:
(I)
C
...
The from·to sequence in the order of subscripts in the unclassified form is maintained in the classified form.
In the caseofhold times, this causes the order to seem reversed from what would be suggested by the terms.
D)
D)
Pulse duration (width)
en
:::r
The time interval between specified reference points on the leading and trailing edges of the pulse waveform.
CD
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.
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Example symnbology:
Classified
Unclassified
Description
tw(W)
twIRL)
tWLWH
tRLRH
Write pulse duration
Pulse duration, RAS low
Refresh time interval
The time interval between the beginnings of successive signals that are intended to restore the level in a dynamic
memory cell to its original level.
NOTE:
The refresh time interval is the actual time interval between two refresh operations and is determined by
the system in which the digital circuit operates. A maximum value is specified that is the longest interval
for which correct operation of the digital circuit is guaranteed.
Example symbology:
Classified
trf
3-6
Unclassified
Description
Refresh time interval
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GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
Setup time
The time interval between the application of a signal at a specified input terminal and a subsequent active transition at
another specified input terminal.
.
NOTES:
1.
2.
The setup time is the actual time interval between two signal events and is determined by the system
in which the digital circuit operates. A minimum value is specified that is the shortest interval for
which correct operation of the digital circuit is guaranteed.
The setup time may have a negative value in which case the minimum limit defines the longest interval (between the active transition and the application of the other signal) for which correct operation
of the digital circuit is guaranteed.
Example symbology:
Classified
Unclassified
Description
tsu(D)
tsu(CA)
tsu(RA)
tDVWH
tCAV-CL
tRAV-RL
Data setup time (before write high)
Column address setup time (before CAS low)
Row address setup time (before RAS low)
Transition times (also called rise and fall times)
The time interval between two reference points (10% and 90% unless otherwise specified) on the same waveform
that is changing from the defined low level to the defined high level (rise time) or from the defined high level to the
defined low level (fall time).
tt
tt(CH)
tr(C)
tf(C)
Unclassified
Description
tCHCH
tCHCH
tCLCL
Transition time (general)
Low-to-high transition time of CAS
CAS rise time
CAS fall time
Valid time
(a)
(,)
::l
Q)
Q)
..c:
en
...
CO
CO
Example symbology:
Classified
...::l
Q)
...
......
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...
C
en
c
o
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cQ)
>
C
o
U
General
C)
The time interval during which a signal is (or should be) valid.
(b)
Output data-valid time
The time interval in which output data contines to be valid following a change of input conditions that could
cause the output data to change at the end of the interval.
c
'E
-...
~
>
CO
en
en
o
Example symbology:
Classified
Unclassified
Description
tv(A)
tAXQX
Ou~put
(9
data valid time after change of address.
This supersedes the older form tpVX.
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3-7
GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
PART 111- TIMING DIAGRAMS CONVENTIONS
MEANING
TIMING DIAGRAM
SYMBOL
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INPUT
FORCING FUNCTIONS
OUTPUT
RESPONSE FUNCTIONS .
Must be steady high or low
Will be steady high or low
High-to-Iow changes
permitted
Will be changing from high
to low some time during
designated interval
Low-to-high changes
permitted
Will be changing from low
to high sometime during
designated interval
Don't Care
State unknown or changing
(Does not apply)
Centerline represents highimpedance (off) state .
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PART IV-BASIC DATA SHEET STRUCTURE
The front page of the data sheet begins with a list of key features such as organization, interface, compatibility, operation (static or dynamic), access and cycle times, technology (N or P channel, silicon or metal oxide gate), and power. In
addition, the top view of the device is shown with the pinout provided. Next a general description of the device,
system interface considerations, and elaboration on other device chracteristics are presented. The next section is an
explanation of the device's operation which includes the function of each pin (Le., the relationship between each input
(output) and a given type of memory). The functions basically involve starting, achieving, and ending a given type of
memory cycle (e.g., programming or erasing EPROMs, or reading a memory location).
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Augmenting the descriptive text there appears a logic symbol prepared in accordance with forthcoming IEEE and IEC
standards and explained in the section of this book following this one. Following the symbol is usually a functional
block diagram, a flow chart of the basic internal structure of the device showing the signal paths for data, addresses,
and control signals, as well as the internal architecture. Usually the next few pages contain the absolute maximum
ratings (e.g., voltage supplies, input voltage, and temperature) applicable over the operating free-air temperature
range. If the device is used outside of these values, it may be permanently destroyed or at least it would not function as
intended. Next, typically, are the recommended operating conditions (e.g., supply voltages, input voltages, and
operating temperature). The memory device is guaranteed to work reliably and to meet all data sheet parameters when
operated in accord with the recommended operating conditions and within the specified timing. If the device is
operated outside of these limits (minimum/maximum), the device's operation is no longer guaranteed to meet the data
sheet parameters. Operation beyond the absolute maximum ratings as just described can result in catastrophic
failures.
The next section provides a table of electrical characteristics over full ranges of recommended operating conditions
(e.g., input and output currents, output voltages, etc.). These are presented as minimum, typical, and maximum
values. Typical values are representative of operation at an ambient temperature of T A = 25°C with all power supply
voltages at nominal value. Next, input and output capacitances are presented. Each pin has a capacitance (whether an
input, an output, or control pin). Minimum capacitances are not given, as the typical and maximum values are the most
crucial.
The next few tables involve the device timing characteristics. The parameters are presented as minimum, typical (or
nominal), and maximum. The timing requirements over recommended supply voltage range and operating free-air
temperature indicate the device control requirements 'such as hold times, setup times, and transition times. These
values are referenced to the relative positioning of signals on the timing diagrams, which follow. The switching
characteristics over recommended supply voltage range are device performance characteristics inherent to device
3-8
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GLOSSARY/TIMING CONVENTIONS/DATA SHEET STRUCTURE
operation once the inputs are applied. These parameters are guaranteed for the test conditions given. The interrelationship of the timing requirements to the switching characteristics is illustrated in timing diagrams for each type of
memory cycle (e.g." read, write, program).
At the end of a data sheet additional applications information may be provided such as how to use the device, graphs
of electrical characteristics, or other data on electrical characteristics.
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TEXAS INSTRUMENTS
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3-9
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3-10
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM Devices
Static RAM and Memory Support Devices
Applications Information
Logic Svmbols
Mechanical Data
C
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01
3
ATTENTION
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These devices contain circuits to protect the inputs and outputs against damage
due to high static voltages or electrostatic fields; however, it is advised that
precautions be taken to avoid application of any voltage higher than maximumrated voltages to these high-impedance circuits.
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Unused inputs must always be connected to an appropriate logic voltage level,
preferably either supply voltage or ground.
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Additional information concerning the handling of ESD sensitive devices is
available from Texas Instruments in a document entitled "Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies. "
Please contact
o
Texas Instruments
P.O. Box 401560
Dallas, Texas 75240
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to obtain this brochure.
MOS
LSI
TMS4116
16,384-811 DYNAMIC RANDOM-ACCESS MEMORY
OCTOBER 1977 - REVISED MAY 1982
16,384 X 1 Organization
0
•
•
0
TMS4116 .•• NL PACKAGE
(TOP VIEW)
10% Tolerance on All Supplies
VBB
D
All Inputs Including Clocks TTL-Compatible
iN
Unlatched Three-State Fully TTL-Compatible
Output
•
TMS4116-15
TMS4116-20
TMS4116-25
0
150 ns
200 ns
250 ns
100 ns
135 ns
165 ns
READ
OR
WRITE
CYCLE
(MIN)
READ,
MODIFYWRITEt
CYCLE
(MIN)
375 ns
375 ns
410 ns
375 ns
375 ns
515 ns
•
0
A6
AO
A3
Common I/O Capability with "Early Write"
Feature
Low-Power Dissipation
- Operating
462 mW (Max)
20 mW (Max)
Standby
A2
A4
Al
A5
VDD ........._ _--'"-VCC
PIN NOMENCLATURE
AO-A6
Addresses
CAS
Column Address Strobe
D
Page-Mode Operation for Faster Access
Time
Q
RAS
3 Performance Ranges:
ACCESS ACCESS
TIME
TIME
ROW
COLUMN
ADDRESS ADDRESS
(MAX)
(MAX)
VSS
CAS
, Data Input
Q
Data Output
RAS
Row Address Strobe
VBB
-5-V Power Supply
VCC
+ 5-V
Power Supply
VDD
+ 12-V Power Supply
VSS
Ground
IN
Write Enable
CI)
Q)
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1-T Cell Design, N-Channel Silicon-Gate
Technology
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16-Pin 300-Mil (7.62 mm) Package
Configuration
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description
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The TMS4116 series is composed of monolithic high-speed dynamic 16,384-bit MOS random-access memories organized as 16,384 one-bit words, and employs single-transistor storage cells and N-channel silicon-gate technology.
All inputs and outputs are compatible with Series 74 TTL circuits including clocks: Row Address Strobe RAS (or R)
and Column Address Strobe CAS (or C). All address lines (AO through A6) and data in (D) are latched on chip to simplify
system design. Data out (Q) is unlatched to allow greater system flexibility.
Typical power dissipation is less than 350 milliwatts active and 6 milliwatts during standby (VCC is not required during standby operation). To retain data, only 10 milliwatts average power is required which includes the power consumed to refresh the contents of the memory.
c::
CO
~
-
C
The TMS4116 series is offered in a 16-pin dual-in-line plastic (NL suffix) package and is guaranteed for operation
from ooc to 70 oe. Package is designed for insertion in mounting-hole rows on 300-mil (7.62 mm) centers.
t The term "read-write cycle" is sometimes uS,ed as an alternative title to "read-modify-write cycle".
Copyright © 1982 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-1
TMS4116
16,384·81T DYNAMIC RANDOM·ACCESS MEMORY
operation
address (AO through A6)
Fourteen address bits are required to decode 1 of 16,384 storage cell locations. Seven row-address bits are set up
on pins AO through A6 and latched onto the chip by the row-address strobe (RAS). Then the seven column-address
bits are set up on pins AO through A6 and latched onto the chip by the column-address trobe (CAS). All addresses
must be stable on or before the falling edges of RAS and CAS. RAS is similar to a chip enable in that it activates
the sense amplifiers as well as the row decoder. CAS is used as a chip select activating the column decoder and the
input and output buffers.
write enable(W)
The read or write mode is selected through the write enable (W) input. A logic high on the W input selects the read
mode and a logic low selects the write mode. The write enable terminal can be driven from standard TTL circuits
without a pull-up resistor. The data input is disabled when the read mode is selected. When Wgoes low prior to CAS,
data-out will remain in the high-impedance state for the entire cycle permitting common 1/0 operation.
data-in (0)
c
-<~
C»
3
Ci"
:XJ
~
s:
C»
~
c..
s:
CD
3
o..,
-<
CJ)
C
"'C
"'C
o
~
c
CD
<
Data is written during a write or read-modify write cycle. Depending on the mode of operation, the falling edge of
CAS or W strobes data into the on-chip data latch. This latch can be driven from standard TTL circuits without a
pull-up resistor. In an early write cycle, W is brought low prior to CAS and the data is strobed in by CAS with setup
and hold times referenced to this signal. In a delayed write or read-modify write cycle, CAS will already be low, thus
the data will be strobed in by IN with setup and hold times referenced to this signal.
data-out (Q)
The three-state output buffer provides direct TTL compatibility (no pull-up resistor required) with a fan-out of two
Series 74 TTL loads. Data-out is the same polarity as data-in. The output is in the high-impedance (floating) state
until CAS is brought low. In a read cycle, the output goes active after the enable time interval talC) that begins with
the negative transition of CAS as long as talR) is satisfied. The output becomes valid after the access time has elapsed and remains valid while CAS is low; CAS going high returns it to a high-impedance state. In an early write cycle,
the output is always in the high-impedance state. In a delayed write or read-modify-write cycle, the output will follow
the sequence for the read cycle .
refresh
A refresh operation must be performed at least every two milliseconds to retain data. Since the output buffer is in
the high-impedance state unless CAS is applied, the RAS only refresh sequence avoids any output during refresh.
Strobing each of the 128 row addresses (AO through A6) with RAS causes all bits in each row to be refreshed. CAS
remains high (inactive) for this refresh sequence, thus conserving power.
Ci"
page-mode
til
Page-mode operation allows effectively faster memory access by keeping the same row address and strobing successive column addresses onto the chip. Thus,the time required to setup and strobe sequential row addresses on
the same page is eliminated. To extend beyond the 128 column locations on a single RAM, the row address and RAS
is applied to multiple 16K RAMs; CAS is decoded to select the proper RAM.
CD
power-up
VSS must be applied to the device either before or at the same time as the other supplies and removed last. Failure
to observe this precaution will cause dissipation in excess of the absolute maximum ratings due to internal forward
bias conditions. This also applies to system use, where failure of the VSS supply mu_st immediately shut down the
other supplies. After power up, eight RAS cycles must be performed to achieve proper device operation.
4-2
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4116
16,384·811 DYNAMIC RANDOM·ACCESS MEMORY
,.,.
I
logic symbol t
RAM 16K X 1
AO
A1
(5)
20D7/21DO
(7)
(6)
A2
A3
A4
A5
A6
(12)
0
A 16383
(11 )
(10)
(13)
20D13/2106
C20[ROW]
RAS
en
CAS
IN
D
Q)
(,)
23C22
':;
(3)
Q)
(2)
AV
A.22D
(14)
C
Q
.......
o
c.
t This symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEG. See explanation on page 10-1.
C.
:::l
CJ)
functional.block diagram
...o>
RAS3
CAS
R/W
D
E
Q)
TIMING & CONTROL
~
~----------------------------~
'C
C
~
ca
A6
ROW
H~ ROW
A5
A4
ADDRESSI-
11/21 MEMORY ARRAY
up
~ DECODE
A3
A2
BUFFERS
171
11/21 1 OF 64 COLUMN DECODE
SENSE
AMP
f---7--
-
-
CONTROL
11/21 1 OF 64 COLUMN DECODE
COLUMN
'---
DUMMY CELLS
ADDRESS
""-
'---
128 SENSE
REFRESH
AMPS
c:t:
a:
IN
REG
DUMMY CELLS
A1
AD
~
110
._--f-::::~~,
f-4-~
----
'""'''
10F2
1/0 SELECTIO
(,)
'E
ca
DATA
OUT
REG.
c
>
C
f- 1/0
ROW
BUFFERS
~ DECODE
~~
11/21 MEMORY ARRAY
AD·A6
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-3
TMS4116
16,384-8IT DYNAMIC RANDOM-ACCESS MEMORY
absolute maximum ratings over operating free-air temperature range (unless other~ise noted) t
Voltage on any pin (see Note 1) .............................................
-0.5 V to 20 V
-1 V to 15 V
Voltage on Vee, Voo supplies with respect to Vss ................................
Short circuit output current ........................................................ 50 mA
Power dissipation ................................................................. 1 W
Operating free-air temperature range ............................................ ooe to 70 0 e
Storage temperature range ................................................
- 65 °e to 150 0 e
t Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affact device reliability.
NOTE 1: Under absolute maximum ratings, voltage values are with respect to the most-negative supply voltage, Vee (substrate), unless otherwise noted.
Throughout the remainder of this data sheet, voltage values are with respect to VSS'
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage, VSS
4.5
-5
-5.5
V
Supply voltage, VCC
Supply voltage, VOO
4.5
10.8
5
12
5.5
13.2
V
V
PARAMETER
c
<::l
c:;"
High-level input voltage, VIH
::IJ
Low-level input voltage, VIL (see Note 2)
s:
Operating free-air temperature, T A
»
NOTE 2;
V
0
Supply voltage, VSS
Q)
3
I
All inputs except RAS, CAS, WRITE
2.4
I
RAS, CAS, WRITE
2.7
-1
7
7
0
0
V
O.B
V
70
°C
The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic voltage levels only_
Q)
::l
Co
s:
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
CD
PARAMETER
3
o...
<
VOH
High-)evel output voltage
VOL
Low-level output voltage
II
Input current (leakage)
o
10
Output current (leakage)
r+
ISS1
ICC1:f:
en
r::::
'C
'C
...
c
CD
(;'
<
1001
ISS2
CD
ICC2
(I)
Average operating current
during read or write cycle
Standby current
1002
ISS4
ICC4:f:
Average refresh current
50
After 1 memory cycle
RAS and
CAS high
RAS cycling,
CAs high
25°C and nominal supply voltages.
VCC is applied only to the output buffer, so ICC depends on output loading.
§ Output loading two standard TTL loads.
*
4-4
27
10
0.5
50
20
50
RAS low,
=
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
MAX
UNIT
V
Minimum cycle time
CAS cycling
1004
t All typical values are at T A
Typt
2.4
CAS high
Minimum cycle time
Average page-mode current
MIN
All other pins = 0 V except VBB = -5 V
Vo = 0 to 5.5 V,
Minimum cycle time
ISS3
ICC3
1003
TEST CONDITIONS
10H = -5 mA
10L = 4.2 mA
VI = 0 V to 7 V,
20
0.4
V
10
pA
±10
p.A
200
49
mA
35
100
mA
pA
pA
±10
p.A
1.5
mA
200
p.A
±10
27
p.A
mA
200
4§
mA
27
mA
uA
1MS4116
16,384-811 DYNAMIC RANDOM-ACCESS MEMORY
capacitance over recommended supply voltage range and operating free-air temperature range, f
1 MHz
Typt
MAX
Cj(A)
Input capacitance, address inputs
4
5
pF
Cj(O)
Input capacitance, data input
4
5
pF
CHRC)
Input capacitance, strobe inputs
8
10
pF
CHW)
Co
Input capacitance, write enable input
8
5
10
pF
7
pF
PARAMETER
Output capacitance
UNIT
switching characteristics over recommended supply voltage range and operating free-air temperature range
PARAMETER
ta(C)
TEST CONDITIONS
Access time from CAS
CL
Load
= 100 pF,
= 2 Series,
ALT.
TMS4116-15
SYMBOL
MIN
MAX
TMS4116-20
MIN
MAX
TMS4116-25·
MIN
MAX
UNIT
tCAC
100
135
165
ns
tRAG
150
200
250
ns
74 TTL gates
ta(R)
Access time from RAS
Output disable time
tdis(GH)
after GAS high
t All typical values are at T A
=
tRLCL = MAX,
CL = 100 pF,
Load = 2 Series,
74 TTL gates
= 100 pF,
Load = 2 Series
CI)
Q)
(.)
':;
Q)
CL
tOFF
a
74 TTL gates
25·C and nominal supply voltages.
40
a
50
a
60
ns
C
.......
o
c.
C.
::J
tJ)
...o>-
E
Q)
~
"'0
C
CO
~
~
a:
(.)
'ECO
c
>-
C
. ,'TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-5
TMS4116
16,384·BIT DYNAMIC RANDOM·ACCESS MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
SYMBOL
TMS4116-15
TMS4116-20
TMS4116-25
MIN
MIN
MIN
MAX
MAX
MAX
UNIT
tC(PI
Page-mode cycle time
tpc
170
225
275
ns
tc(rd)
Read cycle time
tRC
375
375
410
ns
tc(WI
Write cycle time
twc
375
375
410
ns
tc(rdW)
Read, modify-write cycle time
375
375
515
ns
tw{CHl
Pulse width,
tRWC
tcp
60
80
100
ns
tCAS
tRP
100
tRAS
twp
150
CAS
high (precharge time)
tw(CL)
Pulse width, CAS low
tw(RHI
Pulse width RAS high (precharge time)
twIRL)
Pulse width, ~ low
tw(W)
Write pulse width
tt
Transition times (rise and fall) for
135
10,000
120
10,000
45
3
tT
RAS and CAS
10,000
100
200
3
10,000
150
10,000
55
35
165
250
ns
10,000
ns
50
ns
75
50
3
ns
ns
tsu(CA)
Column address setup time
tASC
-10
-10
-10
ns
tsu(RA)
Row address setup time
tASR
0
0
0
ns
o
tsu(D)
Data setup time
tDS
0
0
0
ns
tsu(rd)
Read command setup time
tRCS
0
0
0
ns
C»
tsu(WCH)
tCWL
60
80
100
ns
tRWL
60
80
100
ns
tCAH
45
55
75
ns
tRAH
20
25
35
ns
tAR
95
120
160
ns
-<:;,
3
c:;.
Write command setup time
>
tsu(WRH)
3:
CD
3
o...
-<
t/)
high
before RAS high
Column address hold time
th(CLCA)
th(RA)
C»
::l
0-
CAS
Write command setup time
:ll
3:
before
after CAS low
Row address hold time
Column address hold time
th(RLCA)
after ~ low
th(CLD)
Data hold time after CAS low
tDH
45
55
75
ns
th(RLD)
Data hold time after RAS low
tDHR
95
120
160
ns
tDH
th(WLD)
Data hold time after W low
thIrd)
Read command hold time
45
55
75
ns
tRCH
0
0
0
ns
tWCH
45
55
75
ns
tWCR
95
120
160
ns
Write command hold time
th(CLW)
C
after CAS low
Write command hold time
"C
"C
th(RLW)
o
~
o
CD
<
c:;.
after RAS low
RAS
tRLCH
Delay time,
low to CAS high
tCSH
Delay time, CAS high to RAS low
tCRP
150
-20
200
-20
250
-20
ns
tCHRL
tCLRH
Delay time, CAS low to
tRSH
100
135
165
ns
tCWD
70
95
125
ns
tRCD
20
tRWD
120
160
200
ns
twcs
-20
-20
-20
ns
RAS
high
Delay time, CAS low to W low
tCLWL
CD
(read, modify-write-cycle only)
Delay time,
en
tRLCL
m
low to
ns
CAS low
(maximum value specified only
50
25
65
35
85
ns
to guarantee access time)
Delay time,
tRLWL
RAS
low to
Delay time, W low to
tWLCL
trf
4-6
W low
(read, modify-write-cycle only)
CAS
low
(early write cycle)
Refresh time interval
tREF
.
2
TEXAS"
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
2
2
ms
TMS4116
16.384·81T DYNAMIC RANDOM·ACCESS MEMORY
read cycle timing
r
: : -it
$
'wIRLI
{\-___
I4--tCLRH~ I.-tW(RHI~
T
II
I j4-tRLCL
VIL
~
tc(rd)
tW(CL)---i r-tCHRL----i
If i!
---1 I4t tsu(RA)
l
RLC
I
"
L
j..---tW(CHI---.j
I
I
--t j4f-t
I
v~: ~COLUMN ~D~N)SGOOO
I~
~
I f4--th(RLCA)~
--t J4-rI I
th(RAI
I
ADDRESSES
I
sU (CA)
I
th(CLCA)
.
tdis(CH)
U)
Q)
CJ
'S:
Q)
c
t:
o
c.
C.
::J
en
...o>
E
Q)
~
DO
VALID
VOL
..
~1-----ta(R)----~
)~-----
"C
C
ca
~
«
a:
CJ
'Eca
c
>
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-7
1MS4116
16,384·811 DYNAMIC RANDOM·ACCESS MEMORY
early write cycle timing
c
<::l
D)
ADDRESSES·
3
Ci'
:xl
l>
s:
Q)
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c..
s:
a>
3
...
<
o
en
01
I:
"C
"C
...o...
C
a>
<
Ci'
VOH
DO
----------HI-Z-----------
VOL
a>
fI)
4-8
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4116
16,384·811 DYNAMIC RANDOM·ACCESS MEMORY
write cycle timing
en
Q)
(J
'S;
Q)
C
ADDRESSES
.......
oQ.
Q.
~
rJ)
...>o
E
Q)
~
"C
C
a:1
DI
~
«
0:
(J
'Ea:1
DO
c
>
C
t The enable time (ten) for a write cycle is equal in duration to the access time from
CAS (ta(C)) in a read cycle; but the active levels at the output are invalid.
TEXAS
INSTRUMENTS
POST OFFICE
aox
225012 • DALLAS. TEXAS 75265
4-9
TMS4116
16,384·8IT DYNAMIC RANDOM·ACCESS MEMORY
read·write/read-modify-write cycle timing
14~----------tc(rdWI---------~~~
t..Joor----~'-
: : j t t - - - - , - - - - t W ( R L l - - - - - - -...
::~
+....
. I' r
\4--tRLCL--..
5
IC
"}t-
th (RLCAI
~ ~tsUIRAI
c
~
...j 4 - - - - t C L R H
I
th(RAI
--.I
1'*- tCHRL--.f
- - - - t w I C L I - - - - - - - -..
:
;J
tRLeH
~
H
~tsu(CAI
I
\.twIRHIJ
I
~
I ~tW(CHI---1
III
th(CLCAI
I
I
ADDRESSES
<:::l
Q)
3
cr
»
s:
jJ
Q)
:::l
Co
s:
CD
3
...
o
01
<
o...
r+
c
CD
<
0'
I
I
en
c
I
I
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"C
VOH
DO
VOL
-.....:.i---~
H1 Z
-
:
~'f= -V-A-LlD_DA-T-A_~3)---__
·~ta(CI~
...
~t-----ta(RI---------.(......
CD
en
4-10
.' ..
" . TEXAs·
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
RAS
V'H
-=k~
Ir
r
--I
tRLCH
tc(P).
I I.- 'RLCL 1-1
CAS
Ii
(I)
:3o
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i
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=( L
5J
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CO
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t-----I 'w'CHI
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r-'WICL>~ r-tr-'WICL>-: f-f ~r-'W'ClI~J=
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It
fl
~ I-- I ~
IM
I
Ir
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I
I I
tSU(RA)..j~ I
I ~~tSU(CAl
I
--I~tSU(CA)
I
~~L}.~~
I .
'AA~..............................
~,: ~o3fc3~DtNjtAd./~&ff~00
il~-
VIL
'C
III
th(CLCA)
th(CLCA)
th(CLCA)
I
-+j!J-tSU(CAl
V
ADDRESSES
~
1""""11+-
w
~:c v€N3 v~1" I
~
'h",,-JI--I I
W II~7;1' I
~~ I ~"'CI~
Ih
~
tdis(CHl
DO
~::
'h",,-Jt-- --I ~',""dl
I
I ~ tdis(CH)
~J
j
I+-'h',"
I ~
~"'CI--j i
I !.-.f
....
:n
~
co
.;:.
m
=i
c
<
:2
:z:a
3:
n
=
:z:a
c
o
3:
:2
tdis(CH)
8>---
:i:-
n
n
m
en
en
3: ....
m3:
3: en
o=:
!.....
=-
o
E
VOH
DO
VOL
------------HI-Z-------------
Cl)
~
"C
r::
a:I
~
~
a:
(,)
'E
a:I
r::
>-
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
4-13
TMS4116
16,384·81T DYNAMIC RANDOM·ACCESS MEMORY
CYCLE RATE (& TIME) VS TEMPERATURE
CYCLE RATE (& TIME) VS MAX SUPPLY
CURRENT. 1001
tc(rd) -
70 ~~-
tc(rd) - Cycle Time - ns
ns
375
1000
Q.
Cycle Time -
300
500400,
250
300
250
TA (MAX)
E
GI
c:t
E
I-
~
375
5 00400
1000
50mA
40mA
60
GI
~
at
~~
f
:;
I
~
()
50
o
4
3
2
";;''Y
30mA
~«.,v
>
C.
Q.
::s
(/j
103/t c (rd) - Cycle Rate - MHz
I
0
-<.
...~
20mA
,Q~
X
c:t
~
.~
+~~ ~~
~?-
~
10mA
.9
o
o
2
10 3/t c (rd) -
PAGE-MODE CYCLE RATE (& TIME) VS
CURRENT. 1003
MAX SUPPLY CURRENT. 1004
tc(rd) -
Cycle TIme -
1000
500 400
ns
300
<
5'
C.
Q.
::s
a>
!!
I
:;
~\-<.
()
",""
~~i-\
(/j
o
20mA
\OO~~I
X
c:t
::E
Of
C
.9
C
.9
Cycle Rate -
3
1-.
~ ~I-
...
10mA
- "o
2
I
...
i'<~
o
10 3/t c (rdl -
lJ'p..'/-'1S~
20mA
I"
-(-{~
o
C \..\lJ'\i
(/j
\QQ~;'
X
30mA
>
C.
Q.
::s
<:,~~
c:t
::E
M 10mA
4
o
2
r3
4
103/tC (pl - Page-Mode Cycle Rate - MHz
MHz
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
4-14
250
~
30mA
>
a>
300
E 40mA
~
C
500 400
c:t
40mA
~
::s
1000
50mA
250
c:t
()
4
MHz
Cycle Rate -
CYCLE RATE (& TIME) VS MAX SUPPLY
SOmA
E
3
.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
MOS
LSI
TMS4161
65,536-81T MULTIPORT MEMORY
JULY 1983
•
Dual Accessability - One Port Sequential Access, One Port Random Access
•
Four Cascaded 64-Bit Serial Shift Registers
for Sequential Access Applications
•
Shift Register Loaded Once Every 64, 128,
192, or 256 Shift Cycles as Desired by
User
TMS4161 ... NL PACKAGE
(TOP VIEW)
SIN
SCLK
SOE
D
•
Fast Serial Port ... 25 MHz Shift Rate
•
TR/QE as Output Enable Allows Direct Connection of D, Q and Address Lines to
Simplify System Design
•
Random Access Port Looks Exactly Like a
TMS4164
•
Separate Serial In and Serial Out to Allow
Simultaneous Shift In and Out
•
65,536 x 1 Organization
•
Maximum Access Time from RAS Less
Than ·150 ns
•
W
AO
A6
Al
A5
A2
A4
A3
A7
oS
Q)
Long Refresh Period ... 4 Milliseconds
Low Refresh Overhead Time . . . As Low As
1.6% of Total Refresh Period
•
All Inputs, Outputs, Clocks Fully TTL
Compatible
•
3-State Unlatched Outputs for Both Random
and Serial Access
•
Common I/O Capability with "Early Write"
Feature
•
Page-Mode Operation for Faster Access
•
Low Power Dissipation (TMS4161-15)
C
......
PIN NOMENCLATURE
•
0
0
CI)
Q)
(,)
•
Operating
Standby
TRICE
CAS
RAS
VDD
Minimum Cycle Time (Read or Write) Less
Than 260 ns
-
VSS
SOUT
AO-A7
Address Inputs
CAS
Column Address Strobe
0
C.
C.
::l
en
...>-
D
Random Access Data-In
0
RAS
Random Access Data-Out
Row Address Strobe
SCLK
Serial Data Clock
SIN
Serial Data-In
SOE
Serial Output Enable
~
SOUT
Serial Data-Out
"C
TA/GE
IN
Write Enable
0
E
Q)
c:::
Register Transfer/O Output Enable
VDD
+5-V Supply
VSS
Ground
CO
~
«ex:
(,)
'E
175 mW (Typical)
40 mW (Typical)
0
••
0
0
CO
c:::
>-
•
New SMOS (Scaled-MOS) N-Channel
Technology
•
SOE Simplifies Multiplexing of Video Data
Streams
•
C
Available with MIL-STD-883B Processing
and L(O °C to 70°C), E( - 40°C to 85 DC), or
S( - 55°C to 100°C) Temperature Ranges in
the Future
description
The TMS4161 is a high-speed, dual-access 65,536-bit dynamic random-access memory. The random-access port
makes the memory look like it is organized as 65,536 words of one bit each like the TMS41 ~4. The sequential access
port is interfaced to an internal 256-bit dynamic shift register organized as four 64-bit shift registers which makes
the memory look like it is organized as up to 256 words of up to 256 bits each which are accessed serially. One,
Copyright © 1983 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contalnalnfonnation on a product unde,
development. Texallnstrumentl reserve. the right to
change or discontinue this product without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-15
TMS4161
65.536·81T MULTIPORT MEMORY
two, three, or four 64-bit shift registers can be sequentially read out depending on a two-bit code applied to the two
most significant column address inputs. The TMS4161 employs state-of-the-art SMOS (Scaled-MOS) N-channel double level polysilicon gate technology for very high performance combined with low cost and improved reliability.
The TMS4161 features full asynchronous dual access capability except when transferring data between the shift register
and the memory array.
Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS
in order to retain data. CAS can remain high during the refresh seql!ence to conserve power. Note that the transfer
of a row of data from the memory array to the shift register also refreshes that row.
All inputs and outputs, including clocks, are compatible with Series 74 TTL. All address lines and data-in are latched
on chip to simplify system design. Data-out is unlatched to allow greater system flexibility.
The TMS4161 is offered in a 20-pin dual-in-line-plastic package and is guaranteed for operation from OOC to 70°C.
Packages are designed for insertion in mounting-hole rows on 300-mil (7,62 mm) centers.
random access address space to sequential address space mapping
C
~
m
3
n'
::a
The TMS4161 is designed with each row divided into four, 64-column sections. The first column section to be shifted
out is selected by the two most significant column address bits. If the two bits represent binary 00, then one to four
registers can be shifted out in order. If the two bits represent binary 01, then only 1 to 3 (the most significant) registers
can be shifted out in order. If the two bits represent 10, then one to two of the most significant registers 'can be
shifted out in order. Finally, if the two bits represent 11 only the most significant register can be shifted out. All registers
are shifted out with the least significant bit (bit 0) first and the most significant bit (bit 63) last. Note that if the two
column address bits equal 00 during the last register transfer cycle (TRInE equal to 0) a total of 256 bits can be sequentially read out.
l>
~
Q)
:s
Q.
~
CI)
3
.
o
-<
tn
c:
"0
"0
...o..
4-16
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TeXAS 75265
TMS4161
65,536-811 MULTIPORT MEMORY
functional block diagram
256 COLUMNS
(4 GROUPS OF 64 COLUMNS)
D
,-
- - ROW
-
I
I COL
0
Q
I
1
~~i
-f
D
I
Q
0
256
MEMORY ARRAY
OWS
1_ -
-
ROW
255
-
65.535
I
REG
00
SCLK
COL
0
t
f
-
COL
64
~
REG
10
I
I
fI)
(1)
CJ
SHIFT REGISTERS-REG
01
I
I
256 COLUMNS
"S;
I
I
(1)
SIN
r--
REG
11
C
......
I
COL
128
!
COL
192
+
0
0.
0.
::::J
COL
255
en
SIN
...>
64 BITS
128 BITS
192 BITS
0
1 OF 4
REGISTER
DECODER
256 BITS
K>--
SOUT
'"C
C
CO
:;
+ t
A6
E
(1)
:;
TR/QE
C
The TA/DE pin has two functions. First, it selects either register transfer or random-access operation as RAS falls,
and second, if this is a random-access operation, it functions as an output enable after CAS falls.
To use the TMS4161 in the random-access mode, TR/Of must be high as RAS falls. Holding TR/QE high disconnects
the 256 elements of the shift registers from the corresponding 256 bit lines of the memory array. If data is to be
shifted, the shift registers must be disconnected from the bit lines. Holding TR/QE low enables the 256 switches that
connect the shift registers to the bit lines and indicates that a transfer will occur between the shift registers al\d one
of the memory rows.
Once CAS has been pulled low, TR/QE controls when the data will appear at the Q output (if this is a read cycle).
Whenever TR/QE is held high, the Q output will be in the high-impedance state. This feature removes the possibility
TEXAS
INSfRUMENTS
POST OFFICE BOX 225012 • OALLAS. TEXAS 75265
4-17
TMS4161
65,536·BIT MULTIPORT MEMORY.
of an overlap between data on the address lines and data appearing on the Q output making it possible to connect
the address lines to the Q and 0 lines (Use of this organization prohibits the use of the early write cycle.).
address (AO through A 71
Sixteen address bits are required to decode 1 of 65,536 storage cell locations. Eight row-address bits are set up on
pins AO through A7 and latched onto the chip by the row-address strobe (RAS). Then the eight column-address bits
are set up on pins AO through A7 and latched onto the chip by the column-address strobe (CAS). All addresses must
be stable on or before the falling edges of RAS and CAS. RAS is similar to a chip enable in that it activates the sense
amplifiers as well as the row decoder. CAS is used as a chip select activating the column decoder and the input and
output buffers.
write enable (WI
The read or write mode is selected through the write enable (W) input. A logic high on the Winput selects the read
mode and a logic low selects the write mode. The write enable terminal can be driven from standard TTL circuits
without a pull-up resistor. The data input is disabled when the read mode is selected. When Wgoes low prior to CAS,
data-out will remain in the high-impedance state for the entire cycle permitting common 110 operation.
data-in (D)
c
-<
~
Q)
3
n'
:JJ
l>
S
Q)
~
Co
S
co
3
...o
-<
CJ)
C
"C
"C.
......
o
c
co
<
Ci"
co
en
Data is written during a write or read-modify-write cycle. The falling edge of CAS or W strobes data into the on-chip
data latch. This latch can be driven from standard TTL circuits without a pull-up resistor. In an early write cycle, W
is brought low prior to CAS and the data is strobed in by CAS with setup and hold times referenced to this signal.
In a delayed write or read-modify-write cycle, CAS will already be low, thus the data will be strobed in by W with
setup and hold times referenced to this signal.
data-out (Q)
The three-state output buffer provides direct TTL compatibility (no pull-up resistor required) with a fan-out of two
Series 74 TTL loads. Data-out is the same polarity as data-in. The output is in the high-impedance (floating) state
as long as CAS or TR/GE is held high. Data will not appear on the output until after both CAS and TR/GE have been
brought low. In a read cycle, the guaranteed maximum output enable access time is valid only if tCQE is greater than
tCQE MAX, and tRLCL is greater than tRLCL MAX. Likewise, ta(ClMAX is valid only if tRLCL~ g~ter than tRLCL
MAX. Once the output is valid, it will remain valid while CAS and TR/QE are both low; CAS or TR/QE going high will
return the output to a high-impedance state. In an early write cycle, the output is always in a high-impedance state .
In a delayed write or read-modify-write cycle, the output will follow the sequence for the read cycle. In a register
transfer cycle, the output will always be in a high-impedance state.
refresh
A refresh operation must be performed at least every four milliseconds to retain data. Since the output buffer is in
high-impedance state unless CAS is applied, the RAS only refresh sequence avoids any output during refresh. Strobing each of the 256 row addresses (AO through A7) with RAS causes all bits in each row to be refreshed. CAS can
remain high (inactive) for this refresh sequence to conserve power. Note that the shift registers are also dynamic storage
elements and that the data held in the registers will be lost unless SCLK goes high to shift the data one bit position
or else the data is reloaded from the memory array. See specifications for maximum register data retention times.
page-mode
Page-mode operation allows effectively faster memory access by keeping the same row address and strobing successive column addresses onto the chip. Thus, the time required to setup and strobe sequential row addresses for
the same page is eliminated. To extend beyond the 256 column locations on a single RAM, the row address and RAS
are applied to mUltiple 64K RAMs. CAS is then decoded to select the proper RAM.
4-18
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS. TEXAS 75265
TMS4161
65,536-BIT MULTIPORT MEMORY
sequential access operation
TR/QE
Memory operations involving parallel use of the shift register are first indicated by bringing TR/QE low before RAS
falls low. This enables the switches connecting the 256 elements of the shift register to the 256 bit lines of the memory
array. The W line determines whether the data will be transferred from or to the shift registers.
write enable (W)
In the sequential access mode, W determines whether a transfer will occur from the shift registers to the memory
array, or from the memory array to the shift registers. To transfer from the shift registers to the memory array, Iii
is held low as RAS falls, and, to transfer from the memory array to the shift registers, W is held high as RAS falls.
Thus, reads and writes are always with respect to the memory array. The write setup and hold times are referenced
to the falling edge of RAS for this mode of operation.
row address (AO through A 7)
Eight address bits are required to select one of the 256 possible rows involved in the transfer of data to or from the
shift registers. The AO-A7, W, and the TR/QE line are latched on the falling edge of RAS.
register column address (A7, A6)
en
Q)
(J
To select one of the four shift registers (transfer from memory to register only), the appropriate 2-bit column address
(A 7, A6) must be valid when CAS falls. However, the CAS and register address signals need not be supplied every
cycle, only when it is desired to change or select a new register.
'S;
Q)
C
.......
SCLK
o
c.
Data is shifted in and out on the rising edge of SCLK. This makes it possible to view the shift registers as though
it were made of 256 rising edge D flip-flops connected D to Q. The TMS4161 is designed to work with a wide range
duty cycle clock to simplify system design. Note that data will appear at the SOUT pin not only on the rising edge
of SCLK but also after an access time of ~a(RSO) from RAS high during a parallel load of the shift registers.
C.
:l
en
...>
o
E
Q)
SIN and SOUT
Data is shifted in through the SIN pin and is shifted out through the SOUT pin. The TMS4161 is designed such that
it requires 0 ns hold time on SIN as SCLK rises. SOUT is guaranteed not to change for at least 8 ns after SLCK rises.
These features make it possible to easily connect TMS4161 s together, to allow SOUT to be connected to SIN, and
to give external circuitry a full SLCK cycle time to allow manipulation of the serial data. To guarantee proper serial
clock sequence after power up, a transfer cycle must be initiated before serial data is applied at SIN.
~
"C
c::
CO
~
«
SOE
The serial output enable pin controls the impedance of the serial output allowing multiplexing of more than one bank
of TMS4161 memories into the same external video circuitry. When SOE is at a low logic level, SOUT will be enabled
and the proper data read out. When SOE is at a high logic level, SOUT will be disabled and be in the high-impedance state.
a:
(J
's
CO
c::
>
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) t
C
-1.5 V to 10 V
Voltage on any pin except VDD and data out (see Note 1)
-1 V to 6 V
Voltage on VDD supply and data out with respect to VSS
Short circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 W
Operating free-air temperature range ............................................ OOC to 70°C
Storage temperature range ................................................
- 65°C to 150°C
t Stress beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1:
All voltage values in this data sheet are with respect to VSS'
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TeXAS 75265
4-19
TMS4161
65,536·81T MULTIPORT MEMORY
recommended operating conditions
PARAMETER
Supply voltage, VOO
MIN
NOM
MAX
4.5
5
5.5
V
0
Supply voltage, VSS
High-level input voltage, VIH
2.4
Low-level input voltage, VIL (see Note 2)
-1
V
V
VOO+0.3
0.8
0
Operating free-air temperature, T A
NOTE 2:
UNIT
V
70
°C
The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic voltage levels only.
electrical characteristics over full range of recommended operating conditions (unless otherwise noted)
High-level output
VOH
c
VOL
-
s:
=
TMS4161-20
Typt
MAX
MIN
VI = 0 V to 5.8 V,
VOO = 5 V,
All other pins
:::c
TMS4161-15
Typt
MAX
TEST
CONDITIONS
PARAMETER
falls, t
35
50
30
45
mA
8
10
6
8
mA
30
40
25
35
mA
30
40
20
32
mA
16
27
15
25
mA
RAS cycle,
SIN low,
SOE high
=
tc(rd)
tn
c
minimum cycle time,
CAS high,
"0
"0
..
....
1003
o
SCLK low,
Average refresh current
SIN low,
SOE high,
c
TRtQE high
<
O·
tc(P)
(t)
=
minimum cycle time,
RAS low,
(t)
rn
1004
CAS cycling,
Average page-mode current
TAtGE
low after RAS falls, t
SCLK and SIN low,
SOE high
1005 11
RAS high,
Average shift register
CAS high,
current (includes 1002)
tc(SCLK) = 100 ns
a
NOTE:
1001 thru 1005 assume no load on
and SOUTo Additional information on these parameters on last page.
t All typical values are at T A = 25°C and nominal supply voltages.
t See appropriate timing diagram.
§ VIL > -0.6 V.
I See power versus cycle time derating curve on last page.
4-20
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4161
65,536-0IT MULTIPORT MEMORY
1 MHz
capacitance over recommended supply voltage and operating free-air temperature range, f
Typt
MAX
Ci(A)
Input capacitance, address inputs
4
5
Ci(D)
Input capacitance, data input
4
5
pF
CURCI
Ci(W)
Input capacitance, strobe inputs
8
10
pF
Input capacitance, write enable input
Ci(CK)
Input capacitance, serial clock
Ci(SI)
Ci(SOE)
Input capacitance, serial in
Input capacitance, serial output enable
Ci(TR)
Input capacitance, register transfer input
Co(O)
Output capacitance, random-access data
8
8
4
4
4
5
Co(SOUT)
Output capacitance, serial out
5
PARAMETER
t All typical values are at T A
UNIT
pF
10
pF
10
pF
5
pF
5
pF
5
pF
7
7
pF
pF
= 25°C and nominal supply voltages.
switching characteristics over recommended supply voltage range and operating free-air temperature range
(see figure 1)
PARAMETER
ta(C)
Access time from CAS
Access time of
ta(GE)
ta(R)
TEST CONDITIONS
TR/DE
a from
low
Access time from RAS
SOUT access time from
ta(RSO)
RAS high
Access time from SOE
ta(SOE;
ta(SOI
tdis(CH)+
low to SOUT
Access time from SCLK
=
100 pF
=
100 pF
tRLCL = MAX,
CL = 100 pF
SYMBOL
tCAC
tRAC
MAX
MIN
MAX
100
135
40
40
150
200
en
Q)
UNIT
CJ
'S:
Q)
c
......
o
c.
c.
::::s
50 pF
60
60
CL
=
50 pF
20
25
CL
=
50 pF
30
30
20
25
tOFF
tJ)
ns
...>o
E
Q)
~
'C
output disable time
'fA/DE high
Serial output disable time
tdis(SOE)+
MIN
TMS4161-20
=
from CAS high
from
TMS4161-15
CL
a output disable time
Q
tdis(OE)+
CL
CL
ALT.
from SOE high
20
25
20
25
t The maximum values for tdis(CH). tdis(QE). and tdis(SOE) define the time at which the output achieves the open circuit condition and are not referenced
c:
ca
~
-
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-21
TMS4161
65,536·81T MULTIPORT MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
..
SYMBOL
tc(P)
Page-mode cycle time
tpc
tc(rd)
Read cycle time l
tRC
tc(W)
Write cycle time
twc
tc(rdW)
Read-write/read-modify-write cycle time
tRWC
tc(SCLK)
Serial clock cycle time
tscc
tw(CH)
Pulse width, CAS high (precharge time) +
tw(CL)
Pulse width, CAS low§
tw(RH)
Pulse width, RAS high (precharge time)
twiRL)
Pulse width, RAS low ll
tw(W)
Write pulse width
tw(CKL)
Pulse width, SCLK low
tcp
tCAS
tRP
tRAS
twp
tw(CKH)
Pulse width, SLCK high
tw(QE)
TR/QE pulse width low time
Transition times (rise and fall)
ns
ns
50,000
ns
ns
10,000
ns
ns
10,000
ns
ns
ns
ns
ns
50
ns
tsu(RA)
Row address setup time
tASR
0
0
ns
tRCS
0
0
0
0
ns
twcs
-5
-5
ns
60
60
10
0
45
20
20
95
60
110
45
0
5
60
110
80
80
10
0
55
25
20
140
80
145
55
0
5
80
145
ns
30
30
ns
0
0
ns
low
with TR/QE low
tsu(D)
Data setup time
tsu(rd)
Read command setup time
tDS
before CAS low
Write command setup time before CAS high
tCWL
s:
tsu(WRH)
Write command setup time before RAS high
tRWL
tsu(SI)
Serial data setup time before SCLK high
TR/QE setup time before RAS low
3
tsu(TR)
o
-<
en
th(CLCA)
Column address hold time after CAS low
tCAH
"'l
th(RA)
Row address hold time
tRAH
th(RW)
W hold time after RAS low with TR/QE low
th(RLCA)
Column address hold time after RAS low
"C
"C
th(CLD)
Data hold time after CAS low
tDH
th(RLD)
Data hold time after RAS low
tDHR
....
th(WLD)
Data hold time after W low
th(CHrd)
Read command hold time after CAS high
tRCH
(I)
th(RHrd)
Read command hold time after RAS high
tRRH
<
th(CLW)
Write command hold time after CAS low
tWCH
(I)
th(RLW)
Write command hold time after RAS low
tWCR
0'
en
ns
0
0
tsu(WCH)
c
ns
3
RAS
tAR
tDH
Serial data out hold time after
th(RSO)
thiS!)
RAS low with
TR/OE
low
Serial data in hold time after SCLK high
3
UNIT
0
0
Early write command setup time
o
"'l
50
MAX
tT
tsu(WCL)
c
225
310
310
325
40
80
135
100
200
45
10
10
40
tASC
tsu(RW)
(I)
MIN
160
235
235
260
40 50,000
50
100 10,000
75
150 10,000
45
10
10
40
Column address setup time
RAS, CAS, and SCLK
W setup time before
:J
0..
TMS4161-20
MAX
MIN
tsu(CA)
tt
OJ
TMS4161-15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(continued next page)
NOTE: Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition. VIL max and VIH min must be met at the 10%
and 90% points.
All cycle times assume tT = 5 ns.
Page-mode only.
In a read-modify-write cycle. tCLWL and tsulWCH) must be observed. Depending on the user's transition times, this may require additional CAS low
time (tW(CL))' This applies to page-mode read-modify-write also.
In a read-modify-write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times. this may require additional RAs low
time (tw(RL))'
4-22
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4161
65,536·BIT MULTIPORT MEMORY
timing requirements over recommended supply voltage range and operating free·air temperature range (continued)
ALT.
PARAMETER
SYMBOL
th(SO)
Serial data out hold time after SCLK high
th(TR)
TR/QE hold time after RAS low
tRLCH
Delay time, RAS low to CAS high
tCHRL
Delay time, CAS high to RAS low
tCLQEH
Delay time, CAS low to QE high
tCLRH
Delay time, CAS low to RAS high
(read-modify-write cycle only)
TMS4161·20
MIN
MIN
MAX
MAX
UNIT
8
8
ns
20
20
ns
tCSH
150
200
ns
tCRP
a
a
ns
100
135
ns
tRSH
100
135
ns
tCWD
60
65
ns
Delay time, CAS low to W low
tCLWL
TMS4161-15
Delay time, CAS low to QE low
tCQE
60
(maximum value specified only
95
ns
to guarantee ta(QE) access time)
tRHSC
50
50,000
50
50,000
ns
tRCD
20
50
25
65
ns
tRWD
110
Delay time, RAS high to SCLK high'
Delay time, RAS low to CAS low (maximum
tRLCL
value specified only to guarantee ta(R))
Delay time, RAS low to W low
tRLWL
(read-modify-write cycle only)
trf
t/)
Q)
(.)
'S
Q)
Delay time, SCLK high before
tCKRL
ns
130
10
RAS low with TR/QE low'
Refresh time interval
50,000
4
tREF
10
50,000
ns
4
ms
NOTE: Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition, VIL max and VIH min must be met at the 10%
and 90% points.
c
......
o
c.
C.
::l
en
, SCLK be high or low during tWIRL)'
...o>
E
Q)
PARAMETER MEASUREMENT INFORMATION
~
"C
c::
CO
~
v
= 1.31 V
-JT
RL = 217 fl
OUTPUT
UNDER TEST
«ex:
(.)
'ECO
c::
>
C
CL
FIGURE 1 - LOAD CIRCUIT
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-23
TMS4161
65,536-BIT MULTIPORT MEMORY
read cycle timing
VIH
VIL
VIH
VIL
c
-<::s
Q)
3
AO-A7
c;"
::D
l>
s:
Q)
::s
c.
s:
CD
3
..
-<
o
VIH
en
c
VIL
"'C
"'C
..
o
r+
c
CD
<
c:;'
CD
(I)
4-24
o
VOH
VOL
I
I
I
j-- tCOE
I
I
I
I
I
I I
I I
--I
I
ta(OEI~
ioe--ta(CI
I
I
I--- t di (OEI--1
S
r--tdiS(CH----I
----::---------<{
VALID
·1
~1-----ta(RI----..
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
~~-----
TMS4161
65,536 BIT MULTIPORT MEMORY
o
early write cycle timing
f/)
Q)
(,)
oS;
Q)
AO-A7
C
...
a..
o
0.
0.
:::J
\_-
CJ)
>-
a..
o
E
Q)
~
Iii
DON'T CARE
I_ ••
twlWI
~thlwLDI~
""C
c::
CO
-,
~
-
--.....~tsuIDI
VOH
Q
C
---------------HI-Z---------------
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 '. DALLAS, TEXAS 75265
4-25
TMS4161
65,536-8IT MULTIPORT MEMORY
write cycle timing
"'1·~----------tC(WI-----------...-.!.1
:,: --~X:~============_tw_(R_LI~~~~~~~~~~~~~:1f
rI
·1
..........- - - - t c L R H - - - - -. .
I r-- tRLCL~
I
tt .....
I,
L\
L
r--tw(RHI_~
I
I
I .,.------- tRLcH-------~·1
VIH
V'l
-I
~t~IRAI
\ I It---I
f.-.t
I
th(RAI-t--
c
I
-<::J
!\
I
~tcHRL--.j
""k ~14-----tW(CLI---- ~ Jd
th(RLCAI
--..f
ii
I
I
I
. .ltj!.
..
I ~II
I ..
r----- tw(CHI
.1
tt ~ - . - .
..t-~-----tcLaEH--..f.I...II let~
~tsU(CAI
I
Q)
3
AO-A7
n'
:xl
l>
s:
Q)
::J
C.
s:
(I)
.3
o
-<
en
t:
"C
"C
..c.
o
(I)
<
n'
(I)
en
• The enable time (ten) for a write cycle is equal in duration to the access time from ~ (ta(C)) in a read cycle; but the active levels at the output are invalid.
4-26
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4161
65,536·811 MULTIPORT MEMORY
read-write/read-modify-write cycle timing
,I.
114·-----------tcrdWI----------~·1
II - - - - - - - 14
. ~t
t
WIRLI---------"1;-
L
.:....I"'------tCLRH----~tl._twIRHI~
r
I:.
1 L.-- tRLCL -----..I
---..{
I
I
! tRLCH------~1 ~tCHRL---+I
1
III
~
~
1 1'-----------.. ._
.
I'
1....
1
t:
..
1----twlcLI---~_i
II
r-:-tsulRAI
I
_--twlcHI--~
..
--I
1 I----:-- thlRLCAl 1
.. ,
tt
t--I I· .. I
I I ..
~---:-----tcLoEH-~I~II~
1 I I
I --.a '7tsUICAI I
~ Il
thlRAl1
fA
Q)
Co)
·S
AO-A7
Q)
~~ru
I I- -I
l'RiilE
I
1
I
I1'.
rtcLWL--.f
•
I
o
VOH
I
I
tRLWL
"I I
thIRLDI'
I
t---thlcLDI
·1
I
.
I
.
.1
II
.1
--..f~tsuIDI .1
I
I
thlWLDI
r--
tcoE
VAUD
I"
~
I
;
I
,-,--talCI
•
II
1
1
I
I
I
I
...o>
I
E
Q)
:liE
""C
I
)[;-.wIM1X-X~X....,.)~~,r--J'·{~~4T"'""J1~Cr-"Jf'
:.: OOOOO&N10d00<.t
1
-f
II thlCLWI
I
I
II
tsuIWRHI~
I
I'
I
:: OC~~~c&oot!
D
I~
thlRLWI
1
:
l1;Z;.,......,...-r--rj---r-
'wIDE)
,
I
~tsuIWCHI~
I,
I.
1
\\\f\\\\~
tsulrdl-:--1
..
c
I
I
I
I
I
1
1
I
I
",
I
~I
~
VA"D
I·
CO
:liE
oCt
a:
Co)
'ECO
;«XX)fHHj(
X>C
--I
j4-talOEi
&:
i
&:
>
C
j-- tdislOEI
tdislCHI
p>-----
-I
talRI
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-27
sao!l\aa ~.Ioddns A.lowall\l pue II\I"H O!weuAO
+>-
N
(Xl
I
RAS
1
IS
I I·
tRLCH
-.I t.-
.,
,.
te(P)
tw(CH)
I
I
r--
:1
I.
i.-tRLCL--=-t
I~
th(RA).,....,
~
~
AD.A7
~~~d
~
~z
~@
x
Tnla.
I
I
I
,I
I ,..
-.f r;-tSU(CA)
,
1
I
I
,
I
U1
I
U1
W
V'H
....}
tsu(rd)
.f4-
<7~J ;;V :I.
I.
Q
NOTE:
:::
tSU(CA,)--t
I
r;-
I
I
-----t
I
II
-I,
'caE
r-
!.-ta(C)....
ta(R)
.1
Timing is for non-multiplexed 0, Q, and Address lines.
=--I
I I
~ tsu(rd)
ta(OE)
I
--.lr-th(CHrd)
I
,-
VALID
,
~
~
I
-1
VALID
.....,
~
I
I
~ ~ tsu(rd)
h~\
t:.J=
I~'"
..... ta(C)-.i
.1 tdis(CH) I
I
I
I
I
I I
j.-tdis(CH)
I
}H
I
I
1
I
t--ta(C)--t
I
tdis(CH)
.~
C~
m
01
C-
n
IS
,!
VIL _ _ _ _ _ _
1
, j.....*th(CLCA)
I
I I
I I
r- 'CLOEHtt!
'II
en
'"
th(CLCA)
II
~,: t I \ \\\\
~
-I
1
i~----
II
'
DON'T CARE
,-.
~
~ tCHRL---I
~tW(CL)---.f
I
ROW
,,"ITA'"1 '7:
.~
~t!'J
~,:
th(TR)
;;c
th(CLCA)
I ~ th(RLCA)~
~Ij- I ~ rstsU(CA)·
tsu(RA)
~
0_
:;;z
tt-.l
~
--t
tw(RH)
tCLRH
CAS :,: !i it,wICLJ1ht,wICLJr ~
I
~
Jfr
twIRL)
:,:[\
tt
'C
01
CC
_I
'"C
,..
twiRL)
RAS:::~
I
tt
1L
~
I"
-1
tRLCH
-,
tc(P)
tw(CH)
I.
CAS :,: :i W-" ClIl4"
I
tRLCL--t
th(RAI ~
I
tt--':
;"-+-th(CLCAI
:1
j.--tCLRH
,tsU(RAI~--Ir;I -+I'"iCAI
I[
1
th(TRI-J.--..!
I
--., \.- tsulTRI
fRtOE :,:
~
'I
I~
I
I
r-::I I"
I,
.1
! ~Z-
..3'
s·
CC
en -I
.?1S:
U1
en
Cor.)~
en' en
!!!-I
s:
c:
r-I
:;;
Q
:a
-I
s:
m
s:
Q
:a
-<
TMS4161
65,536·BIT MULTIPORT MEMORY
RAS only refresh timing
VIH
RAS
VIL
VIH
CAS
VIL
VIH
AO-A7
VIL
VIH
TR/OE
.......
VIL
VIH
o
c.
VIL
CJ)
VIH
o
C.
:::I
Vii
...>-
E
0
CD
VIL
~
"C
VOH
a
t:
--------------HI-Z--------------
co
~
VOL
lid:
a:
(.)
'Eco
t:
>-
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-31
TMS4161
65,536·81T MULTIPORT MEMORY
shift register to memory timing
AO-A7
C
'<
:J
Q)
3
c;"
jJ
>
s:
Q)
:J
Q.
s:
(I)
3
o :,:
.o
0OOO£T ~fXXXXXXXXXXXX><
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en
VIH
c
VIL
..
o
r+
c
SCLK
CD
<
C;O
1
.,I--I
,..I.~--___I•
-1
j-tWCKH
~tRHSC--.f
tCKRL
I'
I.
,_
:,:;r \\\\\\\\SS\\\S>\\\\\\
l-j.talsOI,
(I)
I
---------------H-Z------------------
Q
"C
"C
I I
I I
C/I
thIRSOI---f
taIRSOI--tlI•. . - -..
,
I
_,
tWCKL
if
talsOI~
I
VOH---~ z--~O~L~D~S~H~IF=T~~L'--~O~LD~S~HI~FT~R~EG~I~ST~E~R~---' ~~~~~~
SOUT
NOTES:
vOL _ _ _--'
~_ _
RE_G_D_A_TA
_ _..,
DATA NOT VALID
1. The shift register to memory cycle is used to transfer data from the shift register to the memory array. Everyone of the 256 locations in the
shift register is written into the 256 columns of the selected rOw. Note that the data that was in the shift register may have resulted. either
from a serial shift in or from a parallel load of the shift register from one of the memory array rows.
2. SOE assumed low.
3. SCLK may be high or low during twIRL)'
4-32
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4161
65.536-BIT MULTIPORT MEMORY
memory to shift register timing
~
i
twiRL)
}1
:,:------::lII.it-'RLCL----1
r
I
x-'w'cu-}tlt<------
II
1
I..
thIRLCA)
II
tSUIRA)~ I_
I 1I
AO·A7 :,:
<>OC
~
_I
I
thlRW)
1:
~xx~;-£ceCO&.[}£E
Q
VOL
.1
I
I
tCKRL
~
thIRSO)
_______________- J
~
NOTES:
~---J
~
(.)
CO
NOT VAllO
~
CO
-e
c:
ta,so)H
~~
c:
a:
I
________
...o>
cd:
t--tRHSC1
VOH----__.
VOL ________- J
:::s
(/)
"'C
rKL
SCLK ::-.AI--\\\\\\\\\\\\\'i
"
~
~
I
SOUT
0.
0.
~
~ "'tWCKH~
t aISO )....,
...o
+oJ
E
II
I
---------------HI-Z---------------,-
Q)
c
Q)
II
VOH
-S
I
'hlTR,
t/)
Q)
(.)
~
>
____
C
r-taIRSO)
1. The memory to shift register cycle is used to load the shift register in parallel from the memory array. Everyone of the 256 locations in the
shift register re written into from the 256 columns of the selected row. Note that the data that is loaded into the shift register may be either
shifted out or written back into' another row.
2. SOE assumed low.
3. SClK may be high or low during twIRl)'
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-33
TMS4161
65,536-81T MULTIPORT MEMORY
. serial data transfer timing
SCLK
SIN
VIL __
1"""""-----.......-
taISO)~
thlSO)...f..-..I
-----fC
SOUT
VALID
VALID
~_J
r---4-
m
I
Xrc:=--______
B_IT_N_+_1_ _ _ _ _ _.......
taISOE)
I
VIH~~
VIL
~~------------------------------------------------~,
VIH-----------------------------------------------------------------------------
o
CD
<
c:;CD
en
NOTE:
4-34
While shifting data through the serial shift register, the state of TRICe is a don't care as long as TR/QE is held high when RAs goes low and tsu(TR)
and th(TR) timings are observed. This requirement avoids the Initiation of a register-to-memory or memory-to-register data transfer operation. The
serial data transfer cycle is used to shift data in andlor out of the shift register.
TEXAS INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
0>
~
r
tel,dl
Ir
II
RAS
:11: ---"N
tt-\
I
VIH
VIL
v
a
AO·A7
~
~
;:;Z
TR/Qe
• s:
~lTl
~z
~riJ
x
--t
-I
--I
I
I--7tt
mtsUICAI
~
'I-
tel,dl
1'-
II
lr ~
2nd~
-I.I t- th(TRl
r-thICLCAI
!J-L
I
I
II
t+-tSUIRAl
\
1-+-1 r-thlRAI
I
SS
II
r-tw(CLI..j,
"
\
~tW(RHlj
,
~tRLCHI________..j ....-,....+-tCHRL~
II
\1
thlRAIH
j4- .-.t
.(. I
II
I
!.+-tSUICAI
I
I
I
tSU(TRI1
tSUIRWI-:
I
I
th(TRl
I
-1l-thlRWI
I
I
~
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thlTRI
tsuIRWI-{
~
o
3CI)
3
o
-<
3
..3"
:is"
CC
I
I
L!...L
~ ~thlRWI
..
CD
o-x"""]lCeT3~Aeoo<~
tSU(TRlJ
la"
aif
11""11
tSUIRAI~ k!'l
I Il.-th(RLCAl~
CC
II
I I
/
~: JOON !I tzX)(ofrfc6<>:ti Ik
I
I
I
I
II
I
I
I
II
~~-r~'-__~~~~~__~~~-T~~~~~_ _-r~'~~x~x~~~~~~~~~
~I~ ZXXXXXXXXXXXXXX>~}fcem,ll ~~2VeR{Xxmll !KXXX>Oe,o£f€oo~'fre
I
II
II
I
txxxxxX>~'&BE~X
"
~ thlRSOI
I
NOT VALID
NOT VALID
SOE assumed low.
A
NEW ROW
DATA
talsOI~
r
tRHSC~ I
twlCKLI
stored in the shift register and then it is written into other selected rows. The random output port
2.
L.:.-.........- talRSOI
I I -,
I
~,
1. The memory to shift register to memory multiple cycle is used to reorder the rows within the memory array itself. First, the data in a rOw is
as register transfer cycles are selected.
II
thlRWI
tCKRL
:: ~ . \\\\\t
-5'
CD
ec
~
a will be in a high-impedance state as long
r-f
!a'
0
'
-f
s:
c:
CD
3,.....,........AeOO~_
CI')
U1 (n
en
..:T
thlTR)
" CAS and regist~r address need not be supplied every cycle, only when it is desired to change from one register address to another.
-I>
\--twIRHIJ
.,
,
/
I-thlCLCAI
tWCKH~
co
\
I I L.-thIRLCAI~
I
I
~
SOUT
NOTES:
}{
\ I
IT I I
!~ II
II
I-;--
tSUITRIJ
:I~ 'IXlXlYX'lXX'tIX'lXD~}-£CeE
SCLK
I
Ie---tRLCH~ t-r+-tCHRL~
tsulRAI....j
I .
thlTRI
II
Ol
256~
I
€A{i.X»CJ«XXX>ZNfc&{X><4""""""OST
II
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I
tWIRLI,
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1..1-+
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-1-;-1 r;:
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:II~ XXJN! /~~ZVeR~ I!iXXX>Oe,oAz
...
I
-- I-- 1--
I-- - -
9
~I---
1002
--
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i--
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I---
_.-
CO
c
>
2
1
°e
C
10
20
40
60 80 100
200
400 600
1000
800
tc(SCLK) - CYCLE TIME - ns
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
14
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-37
o
m
<
c;'
m
en
4-38
MOS
LSI
TMS4164, SMJ4164
65,536-8IT DYNAMIC RANDOM-ACCESS MEMORY
JULY 1980 - REVISED OCTOBER 1983
•
65,536 X 1 Organization
TMS4164 ••. NL PACKAGE
•
Single +5-V Supply (10% Tolerance)
SMJ4164 .•• JD PACKAGE
(TOP VIEW)
•
JEDEC Standardized Pin-Out in Dual-In-Line
Packages
•
Upward Pin Compatible with TMS4116
(16K Dynamic .RAM)
•
First Military Version of 64K DRAM
•
Available Temperature Ranges:
M . . . - 55°C to 125°C
S ... - 55°C to 100°C
E ... -40°C to 85°C
L ... OOC to 70°C
•
•
•
All Inputs, Outputs, Clocks Fully TTL
Compatible
•
Common I/O Capability with "Early Write"
Feature
•
Low Power Dissipation
Operating ... 125 mW (TVP)
Standby ... 17.5 mW (TVP)
•
VDD
9
A7
mlm
u m
u
1 1817
2
IN
3
RAS
4
15
NC
5
14
AO
6
A2
7
1 1817
16
IN
3
A6
RAS
4
15
A6
NC
AO
5
14
NC
13
NC
A3
6
13
A3
12
A4
A2
7
12
A4
0
16
Q
A
8 91011
AA~g
<>
<>
I"-
ll'l
C"
C ~
u
RAS
en
...>
o
NC
E
Q)
A6
OR
WRITE
CYCLE
(MIN)
230 ns
260 ns
326 ns
NC
NC
A2
READMODIFYWRITE
CYCLE
(MIN)
260 ns
285 ns
345 ns
A1
NC
NC
NC
NC
A5
~
~
A3
A4
u
z
c U
c z
>
U
Z
C
CO
~
«
a:
I"-
C
PIN NOMENCLATURE
AO-A7
The '4164 is a high-speed, 65,536-bit, dynamic
random-access memory, organized as 65,536 words
of one bit each. It employs state-of-the-art SMOS
(scaled MOS) N-channel double-level polysilicon gate
technology for very high performance combined with
low cost and improved reliability.
This document contains information on a new product.
Specifications are subject to change without notice.
A4
A5
NC
TIME
COLUMN
ADDRESS
(MAX)
70 ns
85 ns
135 ns
ADVANCE INFORMATION
MILITARY PRODUCTS (SMJ) ONLY
11
10
Q
(TOP VIEW)
description
:4
A2
A1
13:
Performance Ranges (S, E, L Temperature
Ranges):
READ
ACCESS
ACCESS
'4164-12
'4164-15
'4164-20
A6
A3
(TOP VIEW)
C
C
3-State Unlatched Output
Page-Mode Operation for Faster Access
14
13
12
4
SMJ4164 •.• FG PACKAGE
2
Low Refresh Overhead Time . . . As Low As
1.8% of Total Refresh Period
•
3
VSS
CAS
TMS4164 ••• FPL PACKAGE
c
Long Refresh Period . . . 4 milliseconds
TIME
ROW
ADDRESS
(MAX)
120 ns
150 ns
200 ns
W
RAS
AO
•
•
NC [1 V16
D
2
15
Address Inputs
CAS
Column Address Strobe
D
Data-In
NC
No-Connection
Q
Data-Out
Row Address Strobe
RAS
VOD
+5-V Supply
VSS
Ground
W
Write Enable
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-39
TMS4164, SMJ4164
65,536·BIT DYNAMIC RANDOM·ACCESS MEMORY
The '4164 features RAS access times of 120 ns, 150 ns, and 200 ns maximum. Power dissipation is 125 mW typical
operating and 17.5 mW typical standby.
Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS
in order to retain data. CAS can remain high during the refresh sequence to conserve power.
A" inputs and outputs, including clocks, are compatible with Series 54/74 TTL. A" address lines and data-in are latched on chip to simplify system design. Data-out is unlatched to allow greater system flexibility. Pin 1 has no internal
connection to allow compatibility with other 64K RAMs that use this pin for an additional function.
The TMS4164 is offered in a 16-pin dual-in-line plastic package and is guaranteed for operation from 0 °C to 70°C.
This package is designed for insertion in mounting-hole rows on 300 mil (7,62 mm) centers. An 18-pin plastic chip
carrier (FP suffix) package is also available.
The SMJ4164 is offered in a 16-pin dual-in-line ceramic sidebraze package (JD) and in leadless ceramic chip carrier
packages (FE and FG). The JD package is designed for insertion in mounting-hole rows on 300 mil (7,62 mm) centers
whereas the FE and FG packages are intended for surface mounting on solder lands on 0.050 inch (1,27 mm) centers.
The FE package offers a three layer, 28~pad, rectangular chip carrier with dimensions of 0.350 x 0.550 x 0.072 fnches (8,89 x 13,97 x 1,83 mm). The FG package is a three layer, 18-pad, rectangular chip carrier with dimensions
of 0.290 x 0.425 x 0.065 inches (7,37 x 10,8 x 1,65 mm).
c
-<::::J
operation
Q)
3
o·
::c
l>
s:
Q)
::::J
Co
s:
(l)
3
..,o
-<
CJ)
c:
"C
"C
address (AO through A7)
Sixteen address bits are required to decode 1 of 65,536 storage cell locations. Eight row-address bits are set up on
pins AD through A 7 and latched onto the chip by the row-address strobe (RAS). Then the eight column-address bits
are set up on Pins AO through A7 and latched onto the chip by the column-address strobe (CAS). A" addresses must
be stable on or before the falling edges of RAS and CAS. RAS is similar to a chip enable in that it activates the sense
amplifiers as we" as the row decoder. CAS is used as a chip select activating the column decoder and the input and
output buffers.
write enable (W)
The read or write mode is selected through the write enable (W) input. A logic high on the W input selects the read
mode and a logic low selects the write mode. The write enable terminal can be driven from standard TTL circuits
without a pull-up resistor. The data input is disabled when the read mode is selected. When Iii goes low prior to CAS,
data-out wi" remain in the high-impedance state for the entire cycle permitting common I/O operation.
'
data-in (D)
..,o
.-+
c
(l)
<
n'
(l)
Data is written during a write or read-modify write cycle. Depending on the mode of operation, the falling edge of
CAS or W strobes data into the on-chip data latch. This latch can be driven from standard TTL circuits without a
pull-up resistor. In an early-write cycle, W is brought low prior to CAS and the data is strobed in by CAS with setup
and hold times referenced to this signal. (n a delayed write or read-modify write cycle, CAS will already be low, thus
the data will be strobed in by W with setup and hold times referenced to this signal.
(fj
data-out (Q)
The three-state output buffer provides direct TTL compatibility (no pull-up resistor required) with a fan-out of two
Series 54/74 TTL loads. Data-out is the same polarity as data-in. The output is in the high-impedance (floating) state
until CAS is brought low. In a read cycle the output goes active after the access time interval talC) that begins with
the negative transition of CAS as long as ta(R) is satisfied. The output becomes valid after the access time has elapsed and remains valid while CAS is low; CAS going high returns it to a high-impedance state. In an early-write cycle,
the output is always in the high-impedance state. In a delayed-write or read-modify-write cycle, the output will follow
-the sequence for the read cycle.
11
4-40
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4164, SMJ4164
65,536-811. DYNAMIC RANDOM-ACCESS MEMORY
refresh
A refresh operation must be performed at least every four milliseconds to retain data. Since the output buffer is in
the high-impedance state unless CAS is applied, the RAS-only refresh sequence avoids any output during refresh.
Strobing each of the 256 row addresses lAO through A 7) with RAS causes all bits in each row to be refreshed. CAS
can remain high (inactive) for this refresh sequence to conserve power.
page-mode
Page-mode operation allows effectively faster memory access by keeping the same row address and strobing successive column addresses onto the chip. Thus, the time required to setup and strobe sequential row addresses for
the same page is eliminated. To extend beyond the 256 column locations on a single RAM, the row address and RAS
are applied to mUltiple 64K RAMs. CAS is then decoded to select the proper RAM.
power-up
After power-up, the power supply must remain at its steady-state value for 1 ms. In addition, RAS must remain high
for 100 p.s immediately prior to initialization. Initialization consists of performing eight RAS cycles before proper device
operation is achieved.
logic symbol t
C/)
Q)
(J
->
Q)
c
RAM 64K X 1
AO
A1
A2
A3
A4
A5
A6
A7
15)
~.;....---t
.....
a..
o
20D8/2100
C.
C.
::::J
(7)
(6)
(J)
(12)
o
>
a..
A-65535
(11)
o
E
Q)
(10)
(13)
~
(9)
"C
c:
CO
RAS
~
«
a:
(4)
(J
-E
(15)
CAS
Vi
D
CO
c:
>
23C22
(3)
(2)
C
(14)
....;..~--_t
AVt-----
A,220
Q
t This symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10-1.
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-41
TMS4164, SMJ4164
65,536-8IT DYNAMIC RANDOM-ACCESS MEMORY
functional block diagram
RAS=3
CAS
W
0
TIMING & CONTROL
~------------------~
A1
A6
~r--
A5
ROW
-H~
ADDRESS
BUFFERS
A4
A3
A2
A1
ROW
DECODE
(8)
(1/2) 4 OF 256 COLUMN DECODE
SENSE
AMP
CONTR.
L..-
-
-<::l
II)
3
c:r
-
...
COLUMN
ADDRESS
BUFFERS
-
(8)
~
I-
256 SENSE - REFRESH
AMPS
(1/2) 4 OF 256 COLUMN DECODE
~
IN
REG
DUMMY CELLS
AO
c
(1/2 MEMORY ARRAY)
110
1I0~ ~
r-~
BUFFER &
1 OF 4110
SELECTION
~
OUT
REG.
Q
r-
DUMMY CELLS
ROW
DECODE
(1/2) MEMORY ARRAY
~
r-
:Il
l>
s:
AO-A1
II)
::l
Co
s:
ctI
3
o
.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) t
'<
Voltage on any pin except VOO and data out (see Note 1)
.........................
- 1.5 V to 10 V
-1 V to 6 V
Voltage on VOO supply and data out with respect to VSS ............................
Short circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 W
Operating free-air temperature range: TMS' ......................................
to 70°C
M version
Operating case temperature range:
SMJ'
-55°C to 125°C
S version
-55°C to 100°C
Eversion
-40°C to 85°C
Storage temperature range
-65°C to 150°C
(J)
c:
"C
"C
.
o
....
ooe
o
~
<
~
~
CII
t Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum:rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values in this data sheet are with respect to VSS.
4-42
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4164
65,536-811 DYNAMIC RANDOM-ACCESS MEMORY
recommended operating conditions
PARAMETER
MIN
Supply voltage, VOO
4.5
Supply voltage, VSS
TMS4164
NOM MAX
5
5.5
0
I
2.4
4.8
VOO = 5.5 V
Low-level input voltage, VIL (see Notes 2 and 3)
Operating free-air temperature, T A
2.4
-0.6
6
0.8
0
70
NOTES:
I
V
V
VOO = 4.5 V
High-level input voltage, VIH
UNIT
V
V
DC
2. The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic voltage
levels only.
3. Due to input protection circuitry. the applied voltage may begin to clamp at -0.6 V. Test conditions should comprehend this occurrence.
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
TEST
PARAMETER
CONDITIONS
VOH
VOL
High-level output voltage
Low-level output voltage
IOH = -5 mA
10L = 4.2 mA
II
Input current (leakage)
VI=O V to 5.8 V, VOO=5 V,
All other pins = 0 V
TMS4164-12
TYpt MAX
TMS4164-15
TVpt
MAX
MIN
MIN
2.4
2.4
UNIT
0.4
0.4
V
V
±10
±10
/LA
±10
±10
/LA
Va = 0.4 to 5.5 V,
10
Output current (leakage)
Average operating current
1001 *
during read or write cycle
1002§
Standby current
1003*
Average refresh current
VOO = 5 V,
CAS high
tc = minimum cycle
After 1 memory cycle,
RAS and CAS high
tc = minimum cycle,
RAS low,
Average page-mode current
tc(P) = minimum cycle.
RAS low,
CAS cycling
o
~
~
::::J
40
48
35
45
mA
CJ)
3.5
5
3.5
5
mA
o
28
40
25
37
mA
..
>-
E
Q)
CAS high
1004
....
~
"'C
r:::::
28
40
25
37
mA
CO
~
~
a:
t All typical values are at T A = 25°C and nominal supply voltages.
; Additional information on last page.
§ VIL > -0.6 V.
(J
-e
CO
r:::::
>-
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-43
TMS4164
65,536·BIT DYNAMIC RANDOM·ACCESS MEMORY
electrical chara,cteristics over full ranges of recommended operating conditions (unless otherwise noted)
TEST
CONDITIONS
PARAMETER
VOH
VOL
High-level output voltage
II
Input current (leakage)
10
Output current (leakage)
TMS4164-20
MIN Typt MAX
=
= 4.2 mA
VI = 0 V to 5.8 V. VOO =
All other pins = 0 V
Vo = 0.4 to 5.5 V.
VOO = 5 V.
-5 mA
IOH
IOL
Low-level output voltage
2.4
UNIT
V
0.4
V
±10
p.A
±10
p.A
27
37
mA
3.5
5
mA
20
32
mA
20
32
mA
5 V
\
CAS high
1001 ~
1002§
Average operating current
tc
during read or write cycle
minimum cycle
After 1 memory cycle.
Standby current
RAS and CAS high
tc
1003~
=
Average refresh current
=
minimum cycle.
RAS low.
CAS high
tc(P)
1004
Average page-mode current
=
minimum cycle.
RAS low.
CAS cycling
t All typical values are at T A = 25°C and nominal supply voltages.
t
Additional information on last page.
> ,-0.6 V.
§ VIL
capacitance over recommended supply voltage range and operating free-air temperature range, f
1 MHz
D)
::::J
a.
3
o..,
-<
CJ)
C
'C
'C
o
~
TMS4164
TypT
MAX
PARAMETER
s:
en
UNIT
CHAt
Input capacitance. address inputs
4
7
pF
Ci(O)
Input capacitance. data input
4
7
pF
CHRC)
Input capacitance strobe inputs
8
10
pF
CHW)
Co
Input capacitance. write enable input
Output capacitance
8
5
10
8
pF
pF
t All typical values are at T A = 25 °C and nominal supply voltages.
switching characteristics over recommended supply voltage range and operating free-air temperature range
C
en
<
n°
en
(J)
PARAMETER
TEST CONDITIONS
I
ta(C)
Access time from CAS
ta(R)
Access time from RAS
Output disable time
tdis(CH)
after CAS high
CL
=
TMS4164-12
MIN
100 pF.
= 2 Series
tRLCL = MAX.
Load = 2 Series
CL = 100 pF.
Load = 2 Series
Load
ALT.
SYMBOL
74 TTL gates
74 TTL gates
74 TTL gates
MAX
TMS4164-15
MIN
MAX
UNIT
tCAC
70
85
ns
tRAC
120
150
ns
40
ns
tOFF
0
40
0
1:
4-44
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4164
65,536·811 DYNAMIC RANDOM·ACCESS MEMORY
switching characteristics over recommended supply voltage range and operating free-air temperature range
PARAMETER
TEST CONDITIONS
ALT.
SYMBOL
talC)
Access time from CAS
CL = 100 pF
Load = 2 Series 74 TTL gates
ta(R)
Access time from RAS
tRLCL = MAX.
Load = 2 Series 74 TTL gates
tRAC
CL = 100 pF.
Load = 2 Series 74 TTL gates
tOFF
tdis(CH)
Output disable time
after CAS high
TMS4164-20
MIN
MAX
UNIT
tCAC
135
ns
200
ns
50
ns
0
en
(1)
(J
"S
(1)
c
.....
...
o
c.
C.
::l
(I'J
...o>
E
(1)
~
"'C
C
CO
~
«
a:
(J
"E
CO
c
>
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-45
1MS4164
65.536·811 DYNAMIC RANDOM·ACCESS MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature ranqe
ALT.
PARAMETER
tc(rd)
Page mode cycle time
Read cycle time t
tclWi
Write cycle time
tc(rdW)
Read-write/read-modify-write cycle time
tw(CH)
Pulse width, CAS high (precharge time);
tc(P)
tw(Cl)
tw(RH)
Co
~
CD
3
o...
-<
en
MIN
MAX
UNIT
tpc
tRC
130
230
160
260
ns
ns
twc
230
260
ns
tRWC
tcp
260
285
ns
50
50
ns
tCAS
tRP
70
85
10,000
ns
10,000
100
150
10,000
ns
ns
50
ns
Transition times (rise and fall) for RAS and CAS
tsu(CA)
Column address setup time
tASC
-5
-5
ns
tsu(RA)
tsu(D)
Row address setup time
Data setup time
tASR
tDS
0
0
0
0
ns
ns
tRAS
twp
Write pulse width
Read command setup time
tT
80
120
10,000
tw.iWl
tt
45
40
3
50
3
ns
tRCS
0
0
ns
tsu(WCH)
. Write command setup time before CAS high
tCWL
50
50
ns
tsu(WRH)
Write command setup time before RAS high
tRWL
50
50
ns
th(CLCA)
th(RA)
Column address hold time after CAS low
tCAH
tRAH
40
45
ns
tAR
15
85
20
95
ns
ns
ns
Row address hold time
Column address hold time after RAS low
th(CLD)
Data hold time after CAS low
tDH
40
45
th(RLDI
Data hold time after RAS low
tDHR
85
95
ns
th(WLD)
Data hold time after W low
tDH
45
ns
th(CHrd)
th(RHrd)
Read command hold time after CAS high
Read command hold time after RAS high
tRCH
tRRH
40
0
5
0
5
ns
ns
th(CLW)
Write command hold time after CAS low
tWCH
40
45
ns
th(RLW)
Write command hold time after RAS low
tWCR
85
95
ns
tRLCH
Delay time, RAS low to CAS high
tCSH
120
150
ns
tCHRL
tCLRH
Delay time, CAS high to RAS low
tCRP
tRSH
0
0
ns
60
100
ns
tCWD
40
60
ns
tRCD
15
tRWD
85 .
twcs
-5
c:
tCLWL
o...
tRLCL
"C
"C
TMS4164-15
twIRL)
th(RLCA)
:::s
MAX
MIN
Pulse width, RAS high (precharge time)
Pulse width, RAS low'
tsu(rd)'
Q)
Pulse width, CAS low 9
TMS4164-12
SYMBOL
Delay time, CAS low to RAS high
Delay time, CAS low to W low
(read-modify-write cycle only)
Delay time, RAS low to CAS low
r+
(maximum value specified only
to guarantee access time)
Delay time, RAS low to W low
c
CD
tRLWL
c::
(i'
(read-modify-write cycle only)
Delay time, W low to CAS
CD
tWLCL
I/)
trf
low (early write cycle)
Refresh time interval
tREF
NOTE:
50
4
20
65
ns
100
ns
-5
ns
4
ms
Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition, VIL max and VIH min must be met at the
10% and 90% points.
t All cycle times assume tt = 5 ns.
Page mode only.
§ In a read-modify-write cycle, tCLWL and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAS low time
(tw(CL))' This applies to page mode read-modify-write also.
_
, In a read-modify-write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAS low time
(tw(RL))'
*
4-46
TEXAS
INSTRUMENTS
'POST OFFICE BOX 225012 • DALLAS. TEXAS 752.65
TMS4164
65,536-811 DYNAMIC RANDOM-ACCESS MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
TMS4164-20
MAX
UNIT
tc(P)
Page mode cycle time
tpc
MIN
206
tc(rd)
Read cycle time 1
tRC
326
tc(W)
Write cycle time
twc
326
ns
tc(rdW)
Read-write/read-modify-write cycle time
345
ns
tw{CH)
tw(CLl
Pulse width, CAS high (precharge time)t
Pulse width, CAS low 9
tRWC
tcp
tCAS
10,000
tw(RH)
Pulse width,
135
120
ns
ns
200
10,000
ns
RAS high
SYMBOL
(precharge time)
tRP
twIRL)
Pulse width, RAS low'
tw(W)
tt
Write pulse width
Transition times (rise and fall) for RAS and CAS
tsu(CA)
tsu(RA)
Column addresBs;etup time
Row address setup time
tsu(D)
Data setup time
tRAS
twp
tT
tASC
tASR
tDS
ns
ns
80
ns
55
3
ns
50
ns
-5
0
ns
a
ns
tsu(rd)
Read command setup time
tRCS
0
ns
tsu(WCH)
Write command setup time before CAS high
tCWL
60
ns
tsu(WRH)
th(CLCA)
Write command setup time before RAS high
tRWL
tCAH
60
ns
tRAH
55
25
ns
ns
th(RA)
Column address hold time after CAS low
Row address hold time
th(RLCA)
Column address hold time after RAS low
tAR
120
ns
th(CLD)
Data hold time after CAS low
tDH
55
ns
th(RLD)
Data hold time after RAS low
tDHR
145
ns
th(WLD)
th(CHrdl
Data hold time after W low
Read command hold time after CAS high
tDH
tRCH
55
0
ns
ns
th(RHrd)
Read command hold time after RAS high
tRRH
5
ns
th(CLW)
Write command hold time after CAS low
tWCH
55
ns
th(RLWI
Write command hold time after RAS low
tWCR
145
ns
tRLCH
Delay time, RAS low to CAS high
200
ns
tCHRL
Delay time, CAS high ,to RAS low
Delay time, CAS low to RAS high
tCSH
tCRP
tRSH'
0
135
ns
ns
tCWD
65
ns
tRCD
25
tRWD
twcs
tCLRH
Delay time, CAS low to W low
tCLWL
(read-modify-write cycle only)
......
o
c.
C.
:l
(J)
...o>E
Q)
~
"C
t:
CO
~
Delay time, RAS low to CAS iow
tRLCL
(maximum value specified only
to guarantee access time)
(read-modify-write cycle only)
Delay time, W low to
tWLCL
trf
a:
130
ns
-E
-5
ns
CJ
Delay time, RAS low to W low
tRLWL
~
ns
65
CO
t:
CAS
low (early write cycle)
Refresh time interval
tREF
4
>-
C
ms
NOTE:
Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition, Vil max and VIH min must be met at the
10% and 90% points.
All cycle times assume tt = 5 ns.
Page mode only.
§ In a read-modify-write cycle, tClWl and tsu(WCHI must be observed. Depending on the user's transition times. this may require additional CAS low time
(tw(Clll. This applies to page mode read-modify-write also.
, In a read-modify-write cycle. tRlWl and tsu(WRHI must be observed. Depending on the user's transition times, this may require additional RAS low time
(tw(Rlll.
t
*
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-47
SMJ4164
65.536·811 DYNAMIC RANDOM·ACCESS MEMORY
recommended operating conditions
PARAMETER
MIN
Supply voltage, VOO
MIN
5
5.5
4.5
2.4
voltage, VIL
(see Notes 2 and 3)
Operating case
temperature, T C
j
Q)
MAX
EVERSION
NOM
MAX
MIN
5
5.5
4.5
0
voltage, VIH
Low-level input
C
'<
NOM
4.5
Supply voltage, VSS
High-level input
NOTES:
SMJ4164
S VERSION
M VERSION
MAX
5
5.5
0
2.4
VCC+ 0 .3
UNIT
NOM
V
0
VCC+0.3
2.4
VCC+0.3
V
-0.6
0.8
-0.6
0.8
-0.6
0.8
V
-55
125
-55
100
-40
85
DC
2. The algebraic convention. where the more negative (less positive I limit is designated as minimum. is used in this data sheet for logic voltage
levels only.
3. Due tq input protection circuitry. the applied voltage may begin to clamp at -0.6 V. Test conditions should comprehend this occurrence.
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
3
c=i'
TEST
PARAMETER
:0
CONDITIONS
VOH
High-level output voltage
~
VOL
Low-level output voltage
Q)
j
II
Input current (leakage)
10
Output current (leakage)
1001 *
Average operating current
during read or write cycle
l>
Q.
10H = -5 rnA
10L = 4.2 rnA
SMJ4164-15
M VERSION
MIN Typt
MAX
2.4
VI=O V to 5.8 V, VOO=4.5 V
to 5.5 V, ou~ut ~en
SMJ4164-20
M VERSION
MIN TYpt MAX
2.4
UNIT
V
0.4
0.4
V
±10
±10
p.A
±10
±10
p.A
48
45
rnA
7
7
rnA
40
37
rnA
40
37
rnA
Vo = 0 V to 5.5 V,
~
~
3
o...
'<
en
1002§
tc = minimum cycle
After 1 memory cycle,
Standby current
RAS and CAS high
C
""o...
VOO = 5 V.
CAS high
tc = minimum cycle,
1003*
Average refresh current
1004
Average page-mode current
rt-
RAS low,
CAS high
tc(P) = minimum cycle,
RAS low.
CAS cycling
t All typical values are at T C
= 25 DC
*Additional information on last page.
§ VIL
4-48
>
and nominal supply voltages.
-0.6 V.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
SMJ4164
65,536-011 DYNAMIC RANDOM-ACCESS MEMORY
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
TEST
PARAMETER
CONDITIONS
SMJ4164-12
SMJ4164-15
S,E VERSIONS
MAX
MIN Typt
S,E VERSIONS
MIN Typt
MAX
2.4
VOH
High-level output voltage
10H = -5 mA
VOL
Low-level output voltage
10L = 4.2 mA
II
Input current (leakage)
VI=O V to 5.8 V, VOO=4.5 V
to 5.5 V, output open
10
Output current (leakage)
2.4
UNIT
V
0.4
0.4
V
±10
±10
p.A
±10
±10
p.A
Vo = 0 V to 5.5 V,
1001f
1002§
Average operating current
during read or write cycle
Standby current
VOO = 5 V,
CAS high
tc = minimum cycle
After 1 memory cycle,
RAS and CAS high
40
48
35
45
mA
3.5
5
3.5
5
mA
28
40
25
37
mA
28
40
25
37
mA
tc = minimum cycle,
1003 f
Average refresh current
RAS low,
CAS high
1004
Average page-mode current
tc(P) = minimum cycle,
RAS low,
CAS cycling
...o
+"
t All typical values are at TC = 25 DC and nominal supply voltages.
t Additional information on last page.
§ VIL > -0.6 V.
0.
0.
::l
en
...>o
E
Q)
~
"'C
c::
CO
~
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-49
SMJ4164
65,536-811 DYNAMIC RANDOM-ACCESS MEMORY
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
SMJ4164-20
S.E VERSIONS
MIN Typt MAX
TEST
PARAMETER
CONDITIONS
VOH
High-level output voltage
VOL
Low-level output voltage
II
Input current (leakage)
10H = -5 mA
IOL = 4.2 mA
VI=O V to 5.8 V, VOO=4.5 V
to 5.5 V. output open
UNIT
V
2.4
0.4
V
±10
p.A
±10
p.A
27
37
mA
3.5
5
mA
20
32
mA
20
32
mA
Vo = 0 V to 5.5 V.
10
Output current (leakage)
1001~
Average operating current
during read or write cycle
VDO = 5 V.
CAS high
tc = minimum cycle
After 1 memory cycle.
1002§
Standby current
1003~
Average refresh current
RAS and CAS high
tc = minimum cycle.
RAS low.
C
'<
CAS high
tc(P) = minimum cycle.
~
Q)
1004
3
c=i"
:D
l>
Average page-mode current
RAS low.
CAS cycling
t All typical values are at TC = 25°C and nominal supply voltages.
t Additional information on last page.
§ VIL > -0.6 V.
~
Q)
~
c..
~
1 MHz
capacitance over recommended supply voltage range and operating free-air temperature range, f
CD
3
o..,
'<
en
C
"C
"C
..,o
r+
~
<
c=i"
SMJ4164
Typt MAX
4
7
7
4
PARAMETER
UNIT
CilA)
CilD)
Input capacitance. address inputs
Input capacitance. data input
Ci(RC)
Input capacitance strobe inputs
8
10
pF
Ci(W)
Input capacitance. write enable input
8
10
pF
Co
Output capacitance
5
8
pF
t All typical values are at TA
= 25
pF
pF
·C and nominal supply voltages.
switching characteristics over recommended supply voltage range and operating free-air temperature range
CD
C/l
PARAMETER
--
ALT.
SYMBOL
SMJ4164-15
SMJ4164-20
M VERSION
M VERSION
MIN
MAX
MIN
UNIT
MAX
Access time from CAS
CL = 80 pF,
see Figure 1
tCAC
100
135
ns
ta(R)
Access time from RAS
tRLCL = .MAX,
see Figure 1
tRAC
150
200
ns
tdis(CH)
Output disable time
after CAS high
CL = 80 pF,
see Figure 1
tOFF
60
ns
talC)
4-50
TEST CONDITIONS
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
0
50
0
SMJ4164
65,536-81T DYNAMIC RANDOM-ACCESS MEMORY
switching characteristics over recommended supply voltage range and operating free-air temperature range
PARAMETER
TEST CONDITIONS
CL
=
Access time from CAS
ta(R)
Access time from RAS
tRLCL = MAX,
see Figure 1
Output disable time
CL
after CAS high
see Figure 1
tdis(CH)
MIN
80 pF,
ta(C)
see Figure 1
=
SMJ4164-12 SMJ4164-15
S,E VERSION S,E VERSIONS
ALT.
SYMBOL
MAX
MIN
UNIT
MAX
tCAC
70
85
ns
tRAC
120
150
ns
40
ns
80 pF,
0
tOFF
40
0
switching characteristics over recommended supply voltage range and operating free-air temperature range
PARAMETER
TEST CONDITIONS
CL
=
Access time from CAS
ta(R)
Access time from RAS
tRLCL = MAX,
see Figure 1
Output disable time
CL
after CAS high
SYMBOL
see Figure 1
=
SMJ4164-20
S,E VERSION
MIN
80 pF,
ta(C)
tdis(CH)
ALT.
en
tCAC
135
ns
tRAC
200
ns
-s;
50
ns
c
80 pF,
see Figure 1
UNIT
MAX
tOFF
Q)
(.)
Q)
0
-
~
o
0.
0.
::l
(J)
>-
,0
E
Q)
~
,~
c:
CO
~
«
a:
(.)
-e
CO
c:
>-
C
TEXAS
INSfRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-51
SMJ4164
65,536-811 DYNAMIC RANDOM-ACCESS MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
SYMBOL
SMJ4164-15
SMJ4164-20
M VERSION
M VERSION
MIN
225
UNIT
tc(P)
Page mode cycle time
tpc
tc(rd)
Read cycle time t
tRC
330
410
ns
tc(W)
Write cycle time
twc
330
410
ns
tc(rdW)
Read-write/read-modify-write cycle time
425
ns
Pulse width, CAS high (precharge time) +
tRWC
tcp
345
tw(CH)
tw(CL)
50
80
ns
Pulse width, CAS low §
Pulse width, RAS high (precharge time)
tCAS
100
160
1,500
twIRl)
Pulse width, RAS low'
1,500
Write pulse width
tRAS
twp
150
tw(W)
tt
Transition times (rise and falll for RAS and CAS
tsu(CA)
tsu(RA)
Column address setup time
Row address setup time
tw(RH)
tRP
MAX
MAX
MIN
160
3
tASC
tASR
0
5
1.500
ns
ns
1,500
ns
200
45
tT
135
ns
200
55
20
3
ns
20
ns
0
5
ns
ns
tsu(D)
Data setup time
tDS
0
0
ns
<:::J
tsu(rd)
Read command setup time
tRCS
0
0
ns
tsu(WCH)
Write command setup time before CAS high
tCWL
60
80
ns
3
tsu(WRH)
th(CLCA)
Write command setup time before RAS high
tRWL
tCAH
60
80
ns
70
25
ns
ns
c
Q)
Ci-
th(RA)
Column address hold time after CAS low
Row address hold time
tRAH
60
20
th(RLCA)
Column address hold time after RAS low
tAR
95
140
ns
th(CLD)
Data hold time after CAS low
tDH
70
90
ns
th(RLD)
Data hold time after RAS low
tDHR
125
160
ns
:::J
Co
th(WLD)
th(CHrd)
Data hold time after W low
Read command hold time after C-A-S high
tDH
tRCH
50
0
60
0
ns
ns
~
th(RHrd)
Read command hold time after RAS high
tRRH
5
5
ns
th(CLW)
Write command hold time after CAS low
tWCH
70
90
ns
3
th(RLW)
Write command hold time after RAS low
tWCR
125
160
ns
tRLCH
tCHRL
Delay time, RAS low to CAS high
tCSH
tCRP
150
200
ns
tRSH
0
100
0
135
ns
ns
tCWD
60
65
ns
tRCD
20
tRWD
110
twcs
5
:0
»
~
Q)
CD
...
<
o
en
c
tCLRH
Delay time, CAS high to RAS low
Delay time, CAS low to RAS high
Delay time, CAS low to W low
'C
'C
tCLWL
o...
(read-modify-write cycle only)
Delay time, RAS low to CAS low
r+
tRLCL
c
CD
<
Ci"
(maximum value specified only
to guarantee access time)
Delay time, RAS low to W low
tRLWL
CD
(read-modify-write cycle only)
Delay time, W low to CAS
C/I
tWLCL
trf
low (early write cycle)
Refresh time interval
tREF
NOTE:
t
;
§
,
4-52
50
25
65
130
ns
5
4
ns
ns
4
ms
Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition, VIL max and VIH min must be met at the
10% and 90% points.
All cycle times assume tt = 5 ns.
Page mode only.
In a read-modify-write cycle, tCLWL and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAs low time
_
(tw(CL)). This applies to page mode read-modify-write also.
In a read-modify-write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAS low time
(tw(RL))·
TEXAS
INSfRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
SMJ4164
65,536-011 DYNAMIC RANDOM-ACCESS MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
SYMBOL
SMJ4164-12
SMJ4164-15
S,E VERSIONS
S.E VERSIONS
MIN
MAX
MIN
UNIT
MAX
tc(P)
Page mode cycle time
tpc
130
160
ns
tc(rd)
Read cycle time t
230
260
ns
tc(Wi
tc(rdW)
Write cycle time
Read-write/read-modify-write cycle time
tRC
twc
230
260
260
285
ns
ns
twlCH)
Pulse width, CAS high (precharge time)
tw(CLl
Pulse width, CAS low §
tw(RH)
Pulse width, RAS high (precharge time)
twIRL)
tw(Wi
Pulse width, RAS low'
Write pulse width
'RAS
tRWC
tcp
*
and
CAS
50
tCAS
70
tRP
80
tRAS
twp
120
50
10,000
85
ns
10,000
100
10,000
40
ns
ns
150
45
10,000
3
50
ns
ns
tt
Transition times (rise and fall) for
tsu(CA)
Column address setup time
tASC
-5
-5
ns
tsulRAi
Row address setup time
tASR
0
0
ns
tsu(D)
tsu(rd)
Data setup time
tDS
0
0
ns
tRCS
0
50
0
50
ns
ns
tT
3
50
ns
tsu(WCH)
Read command setup time
Write command setup time before CAS high
tCWL
tsu(WRH)
Write command setup time before
RAS high
tRWL
50
50
ns
th(CLCA)
Column address hold time after CAS low
tCAH
40
45
ns
th(RAJ
Row address hold time
tRAH
15
20
ns
th(RLCA)
th(CLD)
Column address hold time after RAS low
Data hold time after CAS low
tAR
tDH
85
40
95
45
ns
ns
th(RLDl
Data hold time after RAS low
th(WLD)
Data hold time after W low
th(CHrd)
Read command hold time after
high
tRCH
th(RHrdl
th(CLW)
Read command hold time after RAS high
tRRH
tWCH
tti(RLW)
CAS
Write command hold time after CAS low
Write command hold time after ~ low
..
~
a..
o
.
0.
0.
::l
tDHR
85
95
ns
tDH
40
0
45
ns
en
ns
>a..
5
5
ns
o
tWCR
40
85
45
95
ns
ns
OJ
0
-"
E
tRLCH
Delay time, RAS low to CAS high
tCSH
120
150
ns
~
tCHRL
Delay time, CAS high to RAS low
tCRP
0
0
ns
"0
tCLRH
Delay time,
CAS low to RAS high
tRSH
60
100
ns
tCLWL
Delay time, CAS low to W low
(read-modify-write cycle only)
tCWD
40
60
ns
c::
CO
~
«
a:
Delay time, RAS low to CAS low
tRLCL
(maximum value specified only
tRCD
15
tRWD
85
twcs
-5
50
20
65
ns
(.)
'E
to guarantee access time)
tRLWL
Delay time, RAS low to W low
(read-modify-write cycle only)
Delay time, W low to CAS
tWLCL
trf
low (early write cycle)
Refresh time interval
tREF
100
CO
c::
ns
>-
-5
4
C
ns
4
ms
NOTE:
t
t
§
,
Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition. VIL max and VIH min must be met at the
10% and 90% points.
All cycle times assume tt = 5 ns.
Page mode only.
In a read-modify-write cycle, tCLWL and tsulWCH) must be observed. Depending on the user's transition times, this may require additional CAS low time
(tw(CL))' This applies to page mode read-modify-write also.
__
In a read-modify-write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAS low time
(tw(RL))'
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-53
SMJ4164
65,536-8IT DYNAMIC RANDOM-ACCESS MEMORY
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
SYMBOL
tclPI
Page mode cycle time
tpc
tclrd)
Read cycle time t
tRC
tc{WI
Write cycle time
twc
tclrdWI
tw(CH)
tw(CL)
Read-write/read-modify-write cycle time
twlRHI
twIRL)
Pulse width, CAS high (precharge time):!:
tRWC
tcp
Pulse width, CAS low 9
Pulse width, RAS high (precharge time)
tCAS
tRP
Pulse width, RAS low'
Write pulse width
tRAS
twp
twlWI
tt
Transition times (rise and fall) for RAS and CAS
tsu(CA)
tsu(RA)
Column address setup time
Row address setup time
tT
tsulD)
Data setup time
tASC
tASR
tDS
tsu(rd)
Read command setup time
tRCS
Write command setup time before
3r;-
tsulWCHI
tsu(WRH)
thlCLCA)
lJ
th(RAl
th(RLCA)
Column address hold time after RAS low
tAR
th(CLD)
Data hold time after CAS low
tDH
thIRLD)
th(WLD)
th(CHrdl
thlRHrd)
Data hold time after RAS low
Data hold time after W low
Read command hold time after 'CAS high
Read command hold time after RAS high
tRRH
th(CLW)
Write command hold time after CAS low
tWCH
th(RLW)
Write command hold time after RAS low
tWCR
tRLCH
tCHRL
Delay time, RAS low to CAS high
Delay time, CAS high to RAS low
Delay time, CASlow to 'RAS high
tCSH
tCRP
c
-<
:l
~
l>
~
~
:l
Co
~
CD
3
...o
-<
en
tCLRH
'C
'C
tCLWL
c
Write command setup time before RAS high
Column address hold time after CAS low
Row address hold time
Delay time,
...
o
CAS high
'C:AS low to W
tCWL
tRWL
tCAH
tRAH
tDHR
tDH
tRCH
tRSH
low
(read-modify-write cycle only)
SMJ4164-20
S,E VERSIONS
MIN
206
326
326
345
80
135 10,000
120
200 10,000
55
3
50
-5
0
0
0
60
60
55
25
120
55
145
55
0
5
55
145
200
0
135
tCWD
65
tRCD
25
tRWD
130
-5
UNIT
MAX
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Delay time, RAS low to CAS low
r+
cCD
tRLCL
r)"
tRLWL
<
(maximum value specified only
to guarantee access time)
Delay time, RAS low to W low
CD
en
(read-modify-write cycle only)
tWLCL
Delay time, W low to CAS
low (early write cycle)
twcs
trf
Refresh time interval
tREF
NOTE:
65
ns
ns
ns
4
ms
TIming measurements are made at the 10% and 90% points of input and clock transitions. In addition, VIL max and VIH min must be met at the
10% and 90% points.
All cycle times assume tt = 5 ns.
:I: Page mode only.
§ In a read-modify-write cycle, tCLWL and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAS low time
(tw(CL))' This applies to page mode read-modify-write also.
_
, In a read-modify-write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAS low time
(tw(RL))'
t
4-54
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4164, SMJ4164
65,536·81T DYNAMIC RANDOM·ACCESS MEMORY
PARAMETER MEASUREMENT INFORMATION
1.31 V
-II
RL
OUTPUT
UNDER
TEST
FIGURE 1 -
el
LOAD CIRCUIT
read cycle timing
en
Q)
(J
.S;
Q)
C
......
o
c.
C.
:::::I
RAS
CI)
...>-
o
E
Q)
~
CAS
~
c:
m
~
«a:::
AO-A7
(J
'Em
c:
>-
C
w
Q
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-55
TMS4164. SMJ4164
65.536"8IT DYNAMIC RANDOM"ACCESS MEMORY
early write cycle timing
RAS
CAS
c
-<
:::l
Q)
3
C:;"
AO-A7
~
~
~
Q)
:::l
c..
~
w
CD
3
...
-<
o
rn
c:
'0
'0
o
......o
cCD
<
c:;"
CD
(I)
4-56
VOH
Q
-----------HI-Z------------
VOL
TEXAS
INsrRuMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4164, SMJ4164
65,536·8IT DYNAMIC RANDOM·ACCESS MEMORY
write cycle timing
I-
-,,
tc(W)
1
, I-
RAS
tw(RL)
U
VIH
VIL
~r-tt
, j.-tRLCL
, I..
VIH
VIL
tSU(RA)~
I
V,L
_
I'"
~th(RLCA)~
ROW
---I
1 ~th(CLCA)
VIL
1
~ tsu(WCH)
I
V,L
.:;
~th(CLW)----'
I
CD
..
C
....
--.f !I
-1
1 1 r-- th(WLD) ~
~th(CLD) ---.t
0
C.
I
c.
::l
I
1
I
tn
.
>
0
E
CD
.
~
~VALIDDATA~
"C
I,
th(RLD)
I
..
I
t--- ten t ---.j
¢
HI-Z
<
~
j.-.f- tdis(CH)
NOT VALID
VOL
~
1
II
VOH
C
ctS
,
---t j4-tsu (D)
Q
CD
CJ
~VvIJr~~
~vYYWY~
~<2~} CAAE~
~N~!S;,~~~
1
I I r- tw(W)---..
I
,..
V,H
CI)
Jl-tt
I---tSU(WRH)~
1
1
1
D
L
tw(CH)~
III
th(RLW)
VIH
~
~COLUMN~
~
Vi
r-tw(RH)~
J.- tCHRL ---I
_I "
tRLCH
' - - 1 l 4 j tSU (CA)
VIH
"I
I
t-tW(CL)~
t~(RA)-r--'
AO-A7
I
-t
tCLRH
~
I
1
CAS
I-
~
CJ
'e
~
ctS
C
>
C
t The enable time (ten) for a write cycle is equal in duration to the access time from CAS (ta(C)) in a read cycle; but the active levels at the output are invalid.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-57
TMS4164, SMJ4164
65,536·BIT DYNAMIC RANDOM·ACCESS MEMORY
read-write/read-modify-write cycle timing
I-
RAS
::: i t
---..!
\r---
tc(rdWI
,=tIl~
Ilj.
II·
t - - - - th(RLCA) I
-I th(RAI I
C
AO-A7
VIL
I
3
C:;'
1
I
:xl
l>
W
U
s:
3
...
<
VIH
D
VIL
en
c:
...
....
0
C
(1)
C'
C:;'
(1)
1
Q
i\.
"
CtW(CHI--.-.t
:
\1
I
II
I.-tsu(WCHI--t
1\
I
l'
!
I
.. ,
th(RLD)
"-
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th(CLD)
...-.c";-tsu(D)
-oJ
I
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I
I
I
I
'
~~~~f.~xxixJ.&N
~PPlih~~~ VALIDDAT~t~
I.J
I
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I
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1:
~
1
I
/-
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I
ta(R)
./
en
4-58
::It-
---..t I
I
jt-'WIWI~'mATl~nNT'Trn:CATlRnE~
- - - - - - HI-Z
VOL
--.t
t---tsU(WRH)~
,
r--tCLWL
t-
I
"C
"C
tCHRL
~ COLUMN
~tRLWL
(1)
j..-tW(RHI-.i
H---,I
~
.1
~th(CLCAI
I
'tsU(rd)~ I
' I
I
1
~,: ~
Q)
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C.
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I
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s:
~
-I
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tRLCH
~',"ICAI
V'H .;fl-;',"IRAI
<::l
.1
tCLRH
tRLCL - - , . . . . . - t w ( C L I
II ;-
I,. .
It i\.
'wIRL)
I--tt
CAS
.\
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
I
~ tdis(CHI
VALID DATA
{¥>--- - -
V'H - - - - { :"
RAS
: r-
I--
-.I
, I
tc(P}
1.1
I
I
I
t h (RA}1'
I
z
I..
j4-tRLCL ~
I ,
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tt
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I I
VIH
CAS
-,
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_,
r-r
n'
........,
N
~g
z
~H
IL
~
I
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VIL
I ,
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NOTE:
I
I
I
I'
-·II.~tsu(CA}
tsu(rd}
ta(R}
l,..-th(CHrd)
-I
jV:
I
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¢
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~
¢
VALID
~
~
!3'
~.
II
'I I
I H
I
~
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I
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I I
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-=
-=
U'I
U,
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I
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' __
I
=
=i
c
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2:
>
3::
c=:i
=
>
I
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I
I
m
2:
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A write cycle or a read-modify-write cycle can be intermixed with read cycles as long as the write and read-modify-write timing specifications
C
,
I
C .....
J.....,.f-tdis(CH}
~ ~~VALID
~3::
>cn
n~
n_
m-=
cn~
en
..
cn
3::
m3::
3::i;;
c-
=-=
-<~
.J:>.
<0
¥r!
tW(CL)-.I
j.--ta(C}-.I
are not violated.
c1J
1.1
I
I:'~W-
I
j.--ta(c}~,
I
~tdis(CH)
I
I+-tCHRL~
iW~:
I
I
,
~ta(C)----I I
j+tW(RH}-,
1
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l
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rI r--rth(CLCA}
r-.-th(RLCA}--f
ROW
........--r-tw(CH}
tt
Il.--tW(CL}---.f
v~1
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~
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rs
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CC
CD
Dynamic RAM and Memory Support Devices
sa:>!l\ac ~Joddns AJOWall\l pue II\IVU :>!WeUAC
/
~
0,
o
RAS
IVIH~
VIL
I
I
---i
I
CAS
ijc
r
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VIL
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,+
th(RA)J.....i,
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I I
1 j- -I
, J4-rh(RLSA)~
tSU(RA)-.t'f I ~tSUtCA)
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:"
IL
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}~
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I
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~,
~~_i!'--,-------4"""':t~
., L"
tsu(D)......
,
DON'T CARE
1
th(CLD)
I
\1
th(WLD)
VALID DATA
I
I
I
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.
th(CLD)
~
~
-,
r-:-:-,
'
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1
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CD
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ec
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NOTE:
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I
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tw(W)
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1
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h
I
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~~
~
I
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W
tw(CLI-----l
I
=f
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, ~th(CLCA) I
I'
,
~
tw(CHI
I \-
4-
~tCLRH~
.
1
I
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t--tt
i.--tW(CLI----..fnl
'C
I»
fLf4-tw(RHI~l\-
.
-,
\ .~
--I
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I
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,-
I
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::
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·1
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tw(RLI
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.J
1
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*~~{;~6Hm
.1
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A read cycle or a read-modify-write cycle can be intermixed with write cycles as long as read and read-modify-write timing specifications are not
violated,
E!!:
:i:n
n
m
m
m
3:
m
3:
Q
=
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III
CC
CD
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~
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I
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W
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%hilililii'tJlf,
DON'T CARE
I
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., t-tw(RH).,
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tw(CL)
~
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I
tt .....
II
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'II
I : :.--.J-th(CLCA)
----
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.
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¢ VALID DA;A
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•
I
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,
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~~I
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tRLCH
r----:-th(RLCA)~
~th(RA)
VIL~,
Z
,
tc(P)
===--J
I
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.,
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,.-tt
,.
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twIRL)
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¢ VALID DATA
~ ta(C)---.I
}-
en
en
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en
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CI
-<
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:t-
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0-1
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n_
men
NOTE:
A read or a write cycle can be intermixed with read-modify-write cycles as long as the read and write timing specifications are not violated.
cn~
en
..
3: en
m3:
3:~
0-
=en
-<~
~
0,'
....
Dynamic RAM and Memory Support Devices
TMS4164, SMJ4164
65,536-81T DYNAMIC RANDOM-ACCESS MEMORY
RAS-only refresh timing
RAS
CAS
AO-A7
C
'<
:::::s
Dl
3
ci"
jl
>
VIH ~~~",",,~~~~~~··r'I"~~~~~~iT'll~~:Tl~E~~~~~~~~~~T'lI:Tl~
VIL~~~~~~~~~~~~~~A~'~~~A~~~~~A~~~~~~~~~~~~~~~~~~~~
w
~
Dl
:::J
::: ~~~~I:"n':I:"l~t'XTnt'XTnTX'nT!iT!e§T!:{Tr~~Tr~]nTl"T'!'TT'T'!'TT'l"TTT'l"TTT'rTTT'l!"9"'l"'l"'l!"9"'l"'l"'l'"l"'l"'l'"l'''P'P
D
Q.
~
CD
VOH
VOL - - - - - - - - - - - - - - - H I - Z - - - - - - - - - - - - - - - -
Q
3
.
0
'<
IDD1 vs. CYCLE TIME
en
c:
"".
...
0
ct
E
100
80
70
60
80
70
60
50
50
C
fZ
CD
<
5-
w
a:
a:
::I
CD
(.)
en
40
30
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E
~~'(), ifi.
~....~'(),
"
Q.
Q.
II)
20
Q
fZ
w
I'..
.....
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(.)
"......
200
300 400 500
30
N
20
~~~,jI
..... l-y..o ......
>
....I
Q.
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'" .... "
" !' ... I'"
9
10
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1003 vs. CYCLE TIME
100
700
II)
9
1000
~
'
M
C
10
100
'(),jI
200
.....
........
,
, ...... "" ....
~
300 400 500 700
tc(rd) - CYCLE TIME - ns
tc(rd) - CYCLE TIME·- ns
Texas Instruments reserves the right to make changes at any time in order to i~prove design and to supply the best product possible.
4-62
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
~
1000
MOS
LSI
TMS4256. TMS4257
262.144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
MAY 1983 -
•
262,144 X 1 Organization
•
Single +5-V Supply (10% Tolerance)
•
JEDEC Standardized Pin Out
•
Upward Pin Compatible with TMS4164
(64K Dynamic RAM)
•
TMS4256. TMS4257 ... JL OR NL PACKAGE
(TOP VIEW)
AS
DEVICE
TMS4256-10
TMS4257-10
TMS4256-12
TMS4257-12
TMS4256-15
TMS4257-15
TMS4256-20
TMS4257"20
ACCESS
TIME
COLUMN
ADDRESS
(MAX)
100 ns
W
120 ns
READ
OR
WRITE
CYCLE
(MIN)
230 ns
60 ns
Q
AD
A6
A3
A2
A4
Al
A5
VDD
A7
RAS
200 ns
50 ns
VSS
CAS
D
Performance Ranges:
ACCESS
TIME
ROW
ADDRESS
(MAX)
REVISED JANUARY 1984
, PIN NOMENCLATURE
AD-AS
Address Inputs
CAS
Column Address Strobe
D
Data-In
Q
Data-Out
RAS
Row Address Strobe
Write Enable
150 ns
75 ns
260 ns
IN
200 ns
100 ns
330 ns
VDD
+5-V Supply
VSS
Ground
•
Long Refresh Period ... 4 ms (MAX)
•
Low Refresh Overhead Time ... As Low As 1.3% of Total Refresh Period
.....
...
o
c.
c.
::::s
en
>...
o
•
On-Chip Substrate Bias Generator
•
All Inputs, Outputs, arid Clocks Fully TTL Compatible
•
3-State Unlatched Output
E
•
Common I/O Capability with "Early Write" Feature
~
•
Page ('4256) or Nibble-Mode ('4257) Options for Faster Access Operation
"C
•
Power Dissipation As Low As:
Operating ... 225 mW (TVP)
Standby ... 12.5 mW (TVP)
Q)
t:
CO
~
«
ex:
•
RAS-Only Refresh Mode
•
Hidden Refresh Mode
•
CAS-Before-RAS Refresh Mode (Optional)
t:
•
Available with MIL-STD-883B Processing and L(OOC to 70°C), E(-400C to 85°CI, or S(-55°C to
100°C) Temperature Ranges in the Future
C
(.)
'E
CO
>-
description
The' 4256 and' 4257 are high-speed, 262, 144-bit dynamic random-access memories, organized as 262,144 wordsof one bit each. They employ state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology
for very high performance combined with low cost and improved reliability.
These devices feature maximum RAS access times of 100 ns, 120 ns, 150 ns, or 200 ns. Typical power dissipation
is as low as 225 mW operating and 12.5 mW standby.
New SMOS technology permits operation from a single
+ 5-V supply,
Copyright © 1984 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
reducing system power supply and decoupling
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-63
TMS4256, TMS4257
262,144·81T DYNAMIC RANDOM·ACCESS MEMORIES
requirements, and easing board layout. IDD peaks are 150 mA typical, and a -1-V input voltage undershoot can be
tolerated, minimizing system noise considerations.
All inputs and outputs, including clocks, are compatible with Series 74 TTL. All address and data-in lines are latched
on chip to simplify system design. Data-out is unlatched to allow greater system flexibility.
The' 4256 and' 4257 are offered in a 16-pin dual-in-line ceramic or plastic package and are guaranteed for operation
from 0 DC to 70 DC. These packages are designed for insertion in mounting-hole rows on 300 mil (7,62 mm) centers.
operation
address (AO through AS)
Eighteen address bits are required to decode 1 of 262,144 storage cell locations. Nine row-address bits are set up
on pins AO through A8 and latched onto the chip by the row-address strobe (RAS). Then the nine column-address
bits are set up on Pins AO through A8 and latched onto the chip by the column-address strobe (CAS). All addresses
must be stable on or before the falling edges of RAS and CAS. RAS is similar to a chip enable in that it activates
the sense amplifiers as well as the row decoder. CAS is used as a chip select activating the column decoder and the
input and output buffers.
c
-
s:
s:
Data is written during a write or read-modify write cycle. Depending on the mode of operation, the falling edge of
CAS or W strobes data into the on-chip data latch. This latch can be driven from standard TTL circuits without a
pull-up resistor. In an early-write cycle, W is bro,ught low prior to CAS and the data is strobed in by CAS with setup
and hold times referenced to this signal. In a delayed write or read-modify write cycle, CAS will already be low, thus
the data will be strobed in by IN with setup and hold times referenced to this signal.
3
data-out (Q)
Q)
j
Co
CD
o
-<
r+
The three-state output buffer provides direct TTL compatibility (no pull-up resistor required) with a fan-out of two
Series 74 TTL loads. Data-out is the same polarity as data-in. The output is in the high-impedance (floating) state
until CAS is brought low. In a read cycle the output goes active after the access time interval talC) that begins with
the negative transition of CAS as long as.!illB.l is satisfied. The output becomes valid after the access time has elapsed and remains valid while CAS is low; CAS going high returns it to a high-impedance state. In a delayed-write or
read-modify-write cycle, the output will follow the sequence for the read cycle.
c
refresh
~
(I'J
c:::
"C
"C
o
~
CD
C
o·CD
I/)
A refresh operation must be performed at least once every four milliseconds to retain data. This can be achieved by
strobing each of the 256 rows (AO-A7). A normal read or write cycle will refresh all bits in each row that is selected.
A RAS-only operation can be used by holding CAS at the high (inactive) level, thus conserving power as the output
buffer remains in the high-impedance state. Hidden refresh may be performed while maintaining valid data at the output pin. This is accomplished by holding CAS at VIL after a read operation and cycling RAS after a specified pre-charge
period, similar to a "RAS-only" refresh cycle.
CAS-before-RAS refresh (optional)
The optional CAS-before-RAS refresh is utilized by bringing CAS low earlier than RAS (see parameter tCLRLl and holding
it low after RAS falls (see parameter tRLCHR). For successive CAS-before-RAS refresh cycles, CAS can remain low
while cycling RAS. The external address is ignored and the refresh address is generated internally. For devices with
this option, the external address is also ignored during the hidden refresh cycles.
4-64
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4256, TMS4257
262,144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
page-mode (TMS4256)
Page-mode operation allows effectively faster memory access by keeping the same row address and strobing random
column addresses onto the chip. Thus, the time required to setup and strobe sequential row addresses for the same
page is eliminated. The maximum number of columns that can be addressed is determined by tw(RL), the maximum
RAS low pulse width. For example, with a minimum cycle time (tc(P) = 100 ns) appr'oximately 100 of the 512 columns specified by column AO to column AS can be accessed. Row AS provided in the first page cycle, specifies which
group of 512 columns, out of the 1024 internal columns is to be paged.
nibble-mode (TMS4257)
Nibble-mode operation allows high-speed serial read, write, or read-modify-write access of 1 to 4 bits of data. The
first bit is accessed in the normal ~ner wit~ad data coming out at talC) time. The next sequential nibble bits
can be read or written by cycling CAS while RAS remains low. The first bit is determined by the row and column
addresses, which need to be supplied only for the first access. Row AS and column AS provide the two binary bits
for initial selection, with row AS being the least significant address. Thereafter, the falling edge of CAS will access
the next bit of the circular 4-bit nibble in the following sequence:
.. (0,1) - - - - - - - - . ,.... ( 1,0) - - - - - - - 1... (l,l):=-J
C--(O,O)
In nibble-mode, all normal memory operations (read, write, or ready-modify-write) may be performed in any desired
combination.
en
Cl)
.(.)
'S
Cl)
power-up
c
To achieve proper device operation. an initial pause of 200
eight initialization cycles.
p'S
is required after power up followed by a minimum of
......
o
c.
C.
::::J
logic symbol t
tJ)
RAM
(5)
AO ....;..;..:...----12009/2100
(7)
...o>
256K X 1
A1
A2
A3
A4
A5
A6
A7
AS
E
Cl)
(6)
(12)
~
(11)
"C
_
A _O
262143
(10)
t:
CO
~
(13)
~
(9)
a:
(1)
(.)
'E
CO
RAS
CAS
t:
(4)
>
C
(15)
23C22
W
0
(3)
(2)
(14)
A,220
A\l
Q
t This symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10·1.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-65
TMS4256, TMS4257
262,144·81T DYNAMIC RANDOM·ACCESS MEMORIES
functional block diagram
RAS
+
I
~1
r--+-
+
ROW
DECODE
A1
<~
Q)
3
r--
~
(8)
~
(B)
ROW
DECODE
32K ARRAY
I--
-
RDW
DECODE
32K ARRAY
I/O
BUFFERS
1 of 4
SELECliON
~
32K ARRAY
..
256 SENSE AMPS
256 SENSE AMPS
!oo
32K ARRAY
COLUMN DECODE
---{
A6
A7
n'
ROW
DECODE
32K ARRAY
CDLUMN
ADDRESS
BUFFERS
32K ARRAY
256 SENSE AMPS
256 SENSE AMPS
f---
1
A2
A3
A4
AS
c
I
~t
rr;
AD
i
TIMING AND CONTROL
32K ARRAY
ROW
ADDRESS
BUFFERS
W
CAS
~
rill-IN
REG
t--WDUT
REG
32K ARRAY
1.
::IJ
l>
3:
~~L~'!.-
AB
ROW
L
Q)
~
c.
3:
CD
3
...
o
absolute maximum ratings over operating free-air temperature range (ur:tless otherwise noted) t
<
Voltage on any pin including VOO supply (see Note 1) _..............................
- 1 V to 7 V
Short circuit output current ........................................................ 50 mA
Power dissipation ................................................................. 1 W
Operating free-air temperature range ............................................ OOC to 70 0 C
Storage temperature range ................................................
- 65 °C to 150 0 C
CJ)
C
"C
"C
...
o
r+
c
CD
t Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Thi.s is a stress rati~g only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
<
n'
CD
til
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1:
All voltage values in this data sheet are with respect to VSS.
recommended operating conditions
PARAMETER
Supply voltage, VOO
MIN
NOM
MAX
4.5
5
0
5.5
Supply voltage, VSS
V
V
High-level input voltage, VIH
2.4
VOO+0.3
V
Low-level input voltage, VIL (see Note 2)
-1
0.8
70
V
0
Operating free-air temperature, T A
NOTE 2:
4-66
UNIT
°C
The algebraic convention, where the more negative (less positive) limit is designated as maximum, is used in this data sheet for logic voltage levels only.
\
TEXAS
INSTRUMENTS
POST OFFICE BOI< 225012 • DALLAS. TEXAS 75265
11
TMS4256, TMS4257
262,144-8IT DYNAMIC RANDOM-ACCESS MEMORIES
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
TEST
PARAMETER
CONDITIONS
VOH
High-level output voltage
VOL
Low-level output voltage
II
Input current (leakage)
10H = -5 mA
10L = 4.2 mA
VI=O V to 5.8 V, VOO=5 V,
TMS4256-10
TMS4256-12
TMS4257-10
MIN Typt
MAX
2.4
TMS4257-12
Typt
MAX
2.4
All other pins = 0 V to 5.8 V
UNIT
MIN
V
0.4
0.4
V
±10
±10
I'A
±10
±10
I'A
Vo = 0 V to 5.5 V,
10
Output current (leakage)
VOO = 5 V,
CAS high
Average operating current
10D1
1002
during read or write cycle
After 1 memory cycle,
Standby current
75
TBO
65
TBO
mA
2.5
5
2.5
5
mA
60
TBO
50
TBO
mA
tc = minimum cycle
RAS and CAS high
tc = minimum cycle,
1003
Average refresh current
RAS low,
CAS high
tc(P) = minimum cycle,
1004
Average page-mode current
\
RAS low,
50
TBO
40
TBO
mA
45
TBO
35
TBO
mA
CAS cycling
1005
Average nibble-mode current
tc(N) = minimum cycle,
RAS low.
CAS cycling
t All typical values are at T A
= 25°C
CONDITIONS
VOH
High-level output voltage
IOH = -5 mA
VOL
Low-level output voltage
10L = 4.2 mA
II
Input current (leakage)
VI=O V to 5.8 V. VDD=5 V,
All other pins = 0 V to 5.8 V
10
Output current (leakage)
1001
Average operating current
during read or write cycle
1002
Standby current
TMS4256-15
TMS4257-15
MAX
MIN Typt
TMS4256-20
TMS4257-20
MIN Typt
MAX
c.
c.
o
E
Q)
V
~
0.4
V
"C
±10
± 10
I'A
±10
±10
I'A
«a:
-E
2.4
r::::
m
~
o
55
TBO
45
TBO
mA
2.5
5
2.5
5
mA
tc = minimum cycle
RAS and CAS high
m
RAS low,
CAS high
r::::
>-
C
tc = minimum cycle,
Average page-mode current
o
0.4
2.4
VOO = 5 V,
CAS high
After 1 memory cycle,
1004
......
...>-
UNIT
Vo = 0 V to 5.5 V,
Average refresh current
Q)
c
::::s
TEST
1003
o
-S;
en
and nominal supply voltages.
PARAMETER
U)
Q)
45
TBO
35
TBO
mA
35
TBO
25
TBO
mA
30
TBO
20
TBO
mA
tc(P) = minimum cycle,
RAS low,
CAS cycling
tc(N) = minimum cycle,
1005
Average nibble-mode current
t All typical values are at T A
=
RAS low.
CAS cycling
25°C and nominal supply voltages.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-67
TMS4256, TMS4257
262,144·8IT DYNAMIC RANDOM~ACCESS MEMORIES
1 MHz
capacitance over recommended supply voltage range and operating free-air temperature range, f
Typt
MAX
Ci(A)
Input capacitance, address inputs
4
7
pF
Ci(O)
Input capacitance, data input
Input capacitance strobe inputs
4
7
10
pF
pF
10
pF
pF
PARAMETER
CilRC)
Ci(W)
Co
8
8
Input capacitance, write enable input
Output capacitance
5
10
UNIT
t All typical values are at T A· = 25 DC and nominal supply voltages,
switching characteristics over recommended supply voltage range and operating free·alr temperature range
PARAMETER
C
'<
:;:,
ta(C)
Access time from CAS
ta(R)
Access time from RAS
C»
3CiO
Output disable time
tdis(CH)
after CAS high
TEST CONDITIONS
tRLCL~MAX,
CL = 100 pF,
= 2 Series 74 TTL gates
tRLCL = MAX, CL = 100 pF
Load = 2 Series 74 TTL gates
CL = 100 pF,
Load = 2 Series 74 TTL gates
Load
::n
>
PARAMETER
3:
C»
:;:,
c..
3:
3
c
..
o
ta(C)
ta(R)
Access time from CAS
Access time from RAS
Output disable time
tdis(CH)
after CAS high
TEST CONDITIONS
tRLCL~MAX, CL = 100 pF,
ALT_
SYMBOL
TMS4256-12
TMS4257-10
TMS4257-12
MIN
MAX
MIN
UNIT
MAX
tCAC
50
60
ns
tRAC
100
120
ns
30
ns
tOFF
ALT.
SYMBOL
0
30
0
TMS4256-15
TMS4256-20
TMS4257-15
TMS4257·20
MIN
MAX
MIN
UNIT
MAX
tCAC
75
100
ns
tRLCL = MAX, CL = 100 pF,
Load = 2 Series 74 TTL gat'es
tRAC
150
200
ns
CL = 100 pF,
Load = 2 Series 74 TTL gates
tOFF
35
ns
Load
=
2 Series 74 TTL gates
'<
en
C
"C
"C
o
::l.
c
c
<
Cio
C
(fj
4-68
TMS4256-10
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
0
30
0
TMS4256, TMS4257
262,144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
SYMBOL
TMS4256-12
TMS4257-10
TMS4257-12
MIN
120
UNIT
tpc
MIN
100
tpCM
135
165
ns
tRC
200
230
ns
Write cycle time
twc
200
230
ns
Read-write/read-modify-write cycle time
tRWC
tcp
235
270
ns
40
40
50
50
ns
ns
tc!PI
Page-mode cycle time (read or write cycle)
tc(PM)
Page-mode cycle time (read-modify-write cycle)
tc(rd)
Read cycle time t
tC!WI
tc(rdW)
tw(CH)P
Pulse duration, CAS high (page mode)
Pulse duration, CAS high (non-page mode)
twlCHI
tw(Cl)
TMS4256-10
tCPN
Pulse duration, CAS low:t
tCAS
50
tRP
90
100
Write pulse duration
Transition times (rise and fall) for RAS and ~
tRAS
twp
tT
tw(RHI
Pulse duration, RAS high (precharge time)
twIRl)
Pulse duration, RAS low §
tw(WI
tt
35
3
MAX
10,000
60
MAX
ns
10,000
100
ns
ns
10,000
120
10,000
ns
50
40
3
50
ns
ns
tsuJCAi
Column address setup time
tASC
0
0
ns
tsu(RA)
Row address setup time
tASR
0
0
ns
tsu(D)
Data setup time
tDS
0
0
ns
tsu(rd)
Read command setup time
tRCS
0
0
ns
tsu(WCL)
Early write command setup time
before CAS low
twcs
0
0
ns
tsulWCHI
Write command setup time before CAS high
tCWL
30
40
ns
tsu(WRH)
Write command setup time before RAS high
tRWL
30
40
ns
......
th(CLCA)
Column address hold time after CAS low
tCAH
20
20
ns
c.
th(RAI
th(RLCAI
Row address hold time
Column address hold time after RAS low
tRAH
tAR
15
70
15
80
ns
ns
thlCLD)
Data hold time after CAS low
tDH
30
35
ns
th(RLD)
Data hold time after RAS low
tDHR
80
95
ns
tDH
30
35
ns
tRCH
tRRH
0
0
ns
10
35
ns
ns
th(WLD)
Data hold time after W low
thiCHrdl
thlRHrdl
th{CLW)
Read command hold time after CAS high
Read command hold time after RAS high
Write command hold time after CAS low
tWCH
10
30
thlRLWI
Write command hold time after RAS low
tWCR
80
95
ns
tRLCHR
Delay time, RAS low to CAS high 1
tCHR
20
25
ns
tRLCH
Delay time, RAS low to CAS high
tCSH
100
120
ns
tCHRL
tCLRH
Delay time, CAS high to RAS low
Delay time, CAS low to RAS high
tCRP
tRSH
0
50
0
60
ns
ns
tCLRL
Delay time, CAS low to RAS low'
tCSR
20
25
ns
tCWD
50
60
ns
tRCD
25
tRWD
100
Delay time, CAS low to W low
tCLWL
(read-modify-write cycle only)
o
C.
::l
en
>
...
o
E
(1)
~
"C
e
ca
~
«
a:
(.)
'Eca·
e
>
Delay time, RAS low to CAS low
(maximum value specified only
to guarantee access time)
tRLCL
Delay time, RAS low to W low
tRLWL
trf
NOTE:
(read-modify-write cycle only)
..
Refresh time interval
tREF
..
50
25
60
ns
4
ms
120
4
C
ns
Timing measurements are made at the 10% and 90% POints of Input and clock tranSitIOns. In additIOn, VIL max and VIH min must be met at the
10% and 90% points.
t All cycle times assume tt = 5 ns.
:I: In a read-modify-write cycle, tCLWL and tsu(WCHI must be observed. Depending on the user's transition times, this may require additional CAS low time
§
(tw(CLII. This applies to page-mode read-modify-write also.
In a read-modify-write cycle, tRLWL and tsu(WRHI must be observed. Depending on the user's transition times, this may require additional RAS low time
(tw(RLII.
, CAS before
RAS refresh only.
14
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-69
TMS4256, TMS4257
262,144·811 DYNAMIC RANDOM·ACCESS MEMORIES
timing requirements over recommended supply voltage range and operatingfree'air temperature range
ALT.
SYMBOL
PARAMETER
MIN
MAX
UNIT
MAX
Page-mode cycle time (read or write cycle)
tpc
145
190
ns
Page-mode cycle time (read-modify-write cycle)
tpCM
190
245
ns
tc(rd)
tc(W)
Read cycle time t
tRC
twc
260
260
305
330
330
370
ns
ns
ns
ns
Write cycle time
Read-write/read-modify-write cycle time
Pulse duration, CAS high (page mode)
tRWC
tcp
60
80
twlCHt
tw(Cl)
Pulse duration, CAS high (non-page mode)
tCPN
60
80
Pulse duration, CAS low ~
tCAS
75
tw(RH)
twIRl)
tw(W)
Pulse duration, RAS high (precharge time)
Pulse duration, RAS low 9
Write pulse duration
tRP
tRAS
twp
tt
Transition times (rise and fall) for RAS and CAS
tsu(CAi
tsu(RA)
tsu(D)
tsu(WCL)
th(CLCAI
thlRA)
thlRLCAJ
th(CLD)
ns
10,000
100
10,000
ns
100
150
45
10,000
120
200
10,000
ns
ns
tT
3
50
Column address setup time
tASC
0
0
ns
Row address setup time
Data setup time
tASR
tDS
0
0
0
0
ns
ns
Read command setup time
Early write command setup time
tRCS
0
0
ns
ns
before CAS low
tsu(WCH)
tsu(WRH)
Write command setup time before CAS high
Write command setup time before RAS high
Column address hold time after CAS low
3
ns
50
ns
twcs
0
0
tCWL
tRWL
45
60
ns
45
25
60
45
ns
ns
15
100
20
145
ns
45
55
ns
120
45
155
55
ns
ns
tCAH
Row address hold time
Column address hold time after RAS low
55
tRAH
ns
Data hold time after ~ low
tAR
tDH
th(RLD)
th(WLD)
Data hold time after RAS low
Data hold time after W low
tDHR
tDH
thlCHrdl
Read command hold time after CAS high
tRCH
0
0
ns
th(RHrd)
th(CLW)
Read command hold time after FiAS high
tRRH
Write command hold time after ~ low
tWCH
10
45
15
55
ns
ns
th(RLW)
Write command hold time after RAS low
155
ns
Delay time, RAS low to CAS high 1
Delay time, RAS' low to ~ high
tWCR
tCHR
120
tRLCHR
30
150
35
200
ns
ns
ns
tRLCH
tCHRL
<
MIN
tC(PMI
tsu(rdl
Delay time, ~ high to
tCSH
RAS low
t~
0
0
tCLRH
Delay time, CAS low to RAS high
75
100
ns
tCLRL
Delay time, CAS low to RAS low'
Delay time, CAS low to W low
(read-modify-write cycle only)
tRSH
tCSR
30
35
ns
tCWD
70
90
ns
tRCD
25
tRWD
145
tCLWL
Ci'
CD
en
TMS4256-20
TMS4257-20
tc(P)
tc(rdWI
tw(CH)P
cCD
TMS4256-15
TMS4257-15
Delay time,
tRLCL
RAS
low to CAS low
(maximum value specified only
75
30
100
ns
4
ms
to guarantee access time)
tRLWL
Delay time, RAS low to W low
(read-modify-write cycle only)
trf
Refresh time interval
tREF
175
4
ns
NOTE:
Timing measurements are made at the 10% and 90% points of input and clock transitions. In addition, Vil max and VIH min must be met at the
10% and 90% points.
t All cycle times assume tt = 5 ns.
t In a read-modify-write cycle, tClWl and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAS low time
(tw(Cl)). This applies to page-mode .read-modify-write also.
§ In a read-modify-write cycle, tRlWl and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAs low time
(tw(Rl))'
, CAS before
•
RAS
refresh option only.
11
4-70
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4257
262.144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
NIBBLE MODE CYCLE
switching characteristics over recommended supply voltage range and operating free-air temperature range
(unless otherwise noted)
ALT.
PARAMETER
ta(CN)
Nibble mode access time
SYMBOL
fro~
CAS
tNCAC
TMS4257-10
MIN
MAX
25
TMS4257-12
MIN
MAX
30
UNIT
ns
ALT.
SYMBOL
PARAMETER
Nibble mode access time from CAS'
tNCAC
timing requirements over recommended supply voltage range and operating free-air temperature range
(unless otherwise noted)
ALT.
PARAMETER
SYMBOL
tc(N)
Nibble mode cycle time
tc(rdWN)
Nibble mode read-modify-write cycle time
tCLRHN
tCLWLN
Nibble mode delay time, CAS low to
tw(CLN)
Nibble mode delay time, CAS to W delay
Nibble mode pulse duration, CAS low
tw(CHN)
Nibble mode pulse duration, CAS high
TMS4257-12
MIN
tNCP
tNCWL
'20
25
tNRMW
tNRSH
tNCWD
tNCAS
time before CAS high
MAX
60
85
30
25
30
20
Nibble mode write command setup
tsu(WCHN)
MIN
50
70
25
20
25
15
tNC
RAS high
TMS4257-10
MAX
UNIT
en
CI)
CJ
'S;
CI)
.....
C
ns
o
c.
C.
:J
(/)
..
>
timing requirements over recommended supply voltage range and operating free-air temperature range
(unless otherwise noted)
o
E
CI)
ALT.
PARAMETER
TMS4257-15
MIN
tNC
90
130
50
40
50
30
45
tc(N)
Nibble mode cycle time
tc(rdWN)
Nibble mode read-modify-write cycle time
tCLRHN
Nibble mode delay time, CAS low to RAS high
tNRSH
tCLWLN
Nibble mode delay time, CAS to W delay
tNCWD
tw(CLN)
tw(CHN)
Nibble mode pulse duration, CAS low
tNCAS
tNCP
75
105
40
30
40
25
tNCWL
35
tsu(WCHN)
tNRMW
Nibble mode pulse duration, CAS high
Nibble mode write command setup
time before CAS high
MAX
TMS4257-20
SYMBOL
MIN
MAX
UNIT
~
"'C
C
CO
~
ns
«
a:
CJ
'ECO
c
>
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-71
TMS4256, TMS4257
262,144"81T DYNAMIC RANDOM"ACCESS MEMORIES
read cycle timing
I...------tc(rd)------~-~I
I
I \..
RAS
~:: 1-
--f I . - tt
I.
1 I.
tRLCH
VIL
c
II
---f ~ tsu(RA)
I
-<;:::,
3
(S"
AD-AS
:u
>
s:
Ql
;:::,
C.
s:
CD
w
+; : .
VIL
~
=-Ir
~L-
1
I I,
XX"DON~
~_
I·~~~·~·
~ARE:XXX
~yyyyyyy~~~~
I
I
I
VOH
Q
VOL
t---ta(c)~
I
to:
-----'I---HI.z
I-
o
..,
tt
~ tW(CH)-----j
I I
I
"C
"C
~tCHRL--i
!.-!-
I I
I I --../ i+,-tsu(CA)
I
I
VIH~I~
VIL ~ cOLuMNRR:~I:{i~ _ _ _ _ __
1
II
1 I
1
L
_I
~ th(RHrd)
I
I r---r- th(CLCA) I i I
1 -..I
~
I.
-I th(CHrd)
VIH
AM~ ,tsu(rd)
~
3
o..,
-<
en
c
i--tw(RH).-.r
---.: 7f-
~t
I.-- th(RLCA) ~
th(RA)--i
I
Ql
.1
=i: ~
I
VIH
;\. . ----
~
tCLRH~
I ~tRLCL~tW(CL)---.I
CAS
I
=l-
1
tw(RL)
I
I
"I---~·I
VALID
tdis(CH)
~>-------
-I
ta(R)
r+
c
CD
<
(S"
CD
(I)
11
4-72
TEXAS
INsrRuMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4256, TMS4257
262,144·BIT DYNAMIC RANDOM·ACCESS MEMORIES
early write cycle timing
RAS
CAS
t/)
Q)
(.)
.s;:
Q)
C
......
AD-AS
o
0.
0.
::l
en
...>
o
w
E
Q)
~
"'0
c:
CO
~
o
<2:
a:
(.)
'ECO
VOH
Q
-----------HI-Z------------
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
c:
>
C
4-73
TMS4256, TMS4257
262,144·81T DYNAMIC RANDOM·ACCESS MEMORIES
write cycle timing
RAS
1m
CAS
C
-
~
Q)
j
Vi
0..
~
(1)
3
...
-<
0
en
c:::
D
"C
"C
...
0
r+
C
(1)
Q
C
(;'
(1)
In
t The enable time (ten) for a write cycle is equal in duration to the access time from CAS (ta(C)) in a read cycle;'but the active levels at the output are invalid.
4-74
TEXAS
INSfRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4256, TMS4257
262,144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
read·write/read-modify-write cycle timing
RAS
CAS
(/)
Q)
AO-AS
(,)
'S;
Q)
C
...
~
o
c.
C.
::J
en
w
>
~
o
E
Q)
~
"C
L:
C'O
D
~
c3:
a:
(,)
Q
'EC'O
L:
>
C
4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-75
TMS4257
262,144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
nibble mode read cycle timing
r~:: ~----------------------il\..
I,
tW(RH)---\
RAS
: I..
I
I
r--
I
tRLCH---~·1
~
tRLCL
tw(CL)
-Ii r-
tw(CHN)
.1. I---tC(N)~
I'
I
CAS
I.
c
-<
:I
III
3
o·
AO-A8
::JJ
~
~
II
III
:I
C.
~
CD
3
1
w
VIH
,I
~.
I
""'I
ta(C)...j
I,........-..--ta(R)---...~-1
(I'J
c::
o""'I
I
xxxxxxxXxxxxxxx
VIL ...
_-.,;,.A.A.Qo.A.Aojw..A._..oIIooiIIooI"-AI
o
-<
"C
"C
t sU (rd)-1
,
~ta(CN)
tdiS(CH)---I
r---
VOH
Q
ro+
cCD
o·CD<
CIl
1i
4-76
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4257
262,144·81T DYNAMIC RANDOM·ACCESS MEMORIES
nibble mode write cycle timing
t W (RH)-1
RAS
~:: 1\1""----------------------"II
I
I_
I
I
tRLCH
II
I
: j - - - tRLCL
II
-----i
tw(CL)
CAS
VIL
I
-.j
I
I
iJ-
I
I
tsu(RA)
I
th(CLCA)
I I..
I
-I
I
I
-.!
C/)
Q)
ICI
tw(CLN)
II
II
"1---.-th(RLCA)H
th(RA)-iIi4'--~-1
L
ith(CLCA)
I
U
I
":;
I
C
Q)
~:J¢I'-'"'R-O-W-~COLUMN~
I
I
W
--I
tCLRHN
-Io~f---~
VIH
AO-AB
~
VIH .
VIL
I
I
I
II
I
'llli"J"JfMX~
I
I
M~~~';?
=fZW ~
II
th(RLD)--~·1
II ~th(WLD)
tsu(D)-otJ+---
I
0.
0.
::l
o
th(CLW)--to-'i
!
"-
o
en
>
"-
I
II
II
w~~i\~~~E~
I-
I
II
I
I
~tsU(WCL)
...
E
Q)
~
"'0
C
CO
~
VIH
«
a:::
VIL
"E
I
I
I
u
D
CO
c
>
C
VOH
Q
HI-Z
VOL
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-77
TMS4257
262, 144·8IT. DYNAMIC RANDOM·ACCESS MEMORIES
nibble mode read·modify·write-cycle timing
t W (RH)l-1
RAS
:: ~F----------------------------------------~
I.~
1
I
i4--tRLCL-.f
tw(CL)
II
CAS
V,L
1
.
Q)
I
r-tsU(RA).
14--1
I
th(RLCA)~1
1
tl
I
I
I ~ h(CLCA)
~ ~tSU(CA) I
I
th(RA)ri
AO-AS
3
1
I
1- - I ~ tw(CRWN)
; L
I-
I
I
c
<::J
I
tc(rdWN)
~tw(CHN)
DON'T CARE
V,L
n'
:JJ
\.- tsu(WRH)
l>
s:
V,H
W
Q)
I I
V,L
::J
~tSU(D)
c..
s:
II
CD
3
o.,
<
rn
c:
'C
'C
o.,
....
cCD
~th(WLD)
V,H
D
DON'T CARE
V,L
VOH
0
I
I.--
I
I
I
~ta(c) ~ J..-ta(CN)
ta(R)
¢ ~ }-<
VALID
VOL
c:::
n'
CD
r.n
4-78
J.-tdis(CH)
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
VALID
VALID
>-
'C
III
CO
(1)
,-
RAS
twIRL)
~',: ---N: I-+I
I-
I--tt
te(P)
J
1 !.-tRLCL!.i
~I
I
'th(RA)t'
I
Z
~~
ADAS :H
IL
~
I
I,-_i
I
I
1
I
I
1
.....Jr7tsU(ICA)
ROW
I
I
I
I ~th(CLCA)
I
I
:
. 1I
I
1
VIL
I-
I
th(CLCA)
I
I
I
I
I
II
I
N
I I
1I
-J~tsU(rd)
---.J
I
ta(R)
I
--1 \.!-tsU(rd)
I' I
lr-th(CHrd)
-I
----I
jW-;
I
I
I
S
II
I
I I
1 ;..t-th(RHrd)
1
I I
---J
:.r-tsU(rd)
j.--- ta(C) ----.I
I
I
I.
I ~tdiS(CH)
J.--..I-th(CHrd)
+=+=:::::j
c
<
2
l>
S
n
:::c
l>
2
C
I--- ta(C) ----.I
A write cycle or a read-modify-write cycle can be intermixed with ·read cycles as long as the write and read-modify-write timing specifications
are not violated.
' __
I
e~
en
,!')
Ca
I
iW~:
II~$Y- I
I
I ~tdis(CH)
II
th(CHrd)--I \ . -
I
I
TTT~:iN'I'T'I"'~'j:~~;~;"""'E~
COL
II
i'
~.
1
--Il..!-l tsu(CA)
• COL
i---ta(C)
<::
I
!
~
~
I I
H
1
I
--.,j.!-tSU(CA)
M
I
tW(CL)---..i
I
I
I
I
IIIII~I-I
V'HEW'
:
NOTE:
l
I
1
1
r--r-th(CLCA)
r-tW(RH)j
l~tCHRL.....j
:
l
~J~~;;{~~~!{~
I~IS
I
I
W
I
r--
I
'
rTth(RLCA).....J
tSU(RA)--\J.!-
~d
I
I 1
VIL
-r,1.
!.----.t-tw(CH)P
tt
l+-tw(CL)
r-
I
\.--tCLRH~ I
-I
I
n
I I.--tw(CL)~
'N,I
II
_
VI
CAS
- H
I
t:
J{
H
'I
tRLCH
~
-,
o
I.
I
t
i.-+tdis(CH)
VALID
~---
S• --t
~S
en
n
m+=N
en
enU'l
en
~
m-t
SS
Oen
:::c+=_N
m
.!..J
co
U'I
en ......
~
Dynamic RAM and Memory Support Devices
sao!l\aa :a..IoddnS A.lowall\l pue II\IVt:l O!weuAa
~
Co
o
I-
RAS
VIH~.
I·
VIL.
.
Ir
~
I
L
r-tt
L
r--tRLCL
VIH
II
VIL
I I
I-
tc(P)
I
-rI
I
--I
.th(RA~....I.-.I1
II
. tSU(RA).....j1.!-
~d
AO-AS
~~.
I
~th(CLCA)
I
J
I
I
I
f,tsU(CA)
~
I
I
I
I I
I
4-
l\-
~ tw(RH) ~
1
tCLRH--'"
I
I
j4--tCHRL ~
I
I
~ ~ tsu(CA)
I
4 1 th(CLCA)1
1
I
j
I
I I
I
I
.
I
---.J ~ tsu(CA)
II I
~I
1'T"r'T"I'T"~~
II
'h!
,
1
J I
•
I
I
~
•
~tsu(WCH)---"
I
-t
I_!
IJ
I
su(WRH)----"
~
I
th(CLW)
.
I
- r--tsu(WCH)-.,
II
,..-:--tsu (w6n--.,
I ·
I
,~!!
I~
~'---""'.~I th(CLW)
II
l~
VIL~~~~~
I
I I-,
I I-I
I IJ
-I
.1
II
_I
II
tw(W)
I I
:'~
I
I
1
I
tw(W)
,.I
,-,
I
,
OON'T CARE·
IL
•
VALID DATA
1
.-
_I
~th(RLD) ----..J
tsu(D).....
th(WLD)
OON'T CARE
I
th(CLD)
I-
tw(W)
L
~
j..!-f
I
Ȣ
"'-:--1
I
I-
I
VALID DATA
.
th(CLD)
I.
.J
1
th(WLD)
_~¥i;:¥X;~~
I
-.
th(CLD)
A read cycle or a read-modify-write cycle can be intermixed with write cycles as long as read and read-modify-write timing specifications are not
violated.
N-f
ens:
!"en
-~
~N
Co
~U1
~"
=i-f
~
~
.
:
30
n
n
'<
tW(CL)~}~ ~Ltw(CL)--..Itl
I
11&=----=f
1
/.--.f-th(CLCA)
I
~th(CLW)
~
~I
I
I
V'H~!i
t SU (D)"1
NOTE:
I
,I
J.--
~
:,:~~COL~
~th(RLW)----'
o
I'
I
•
:
W
j+"tt
I~
I
I
tw(CH)P
I
I t4-rh(RL~A)--.j
Z
II
i . - tW(CL)---..Ir-1{1
1
=t~
~
-I
I L...
't:I
III
CC
-,
S,
-I
tRLCH
: :
CAS
tw(RL)
..3"
;-
:i"
CC
'en
CCI~
cS:
0
Co
......
Dynamic RAM and Memory Support Devices
TMS4256. TMS4257
262.144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
RAS-only refresh cycle timing
:1:
Jr
AO-A7 VIH
VIL
~
CAS
I
~th(RA)
~
1-1..'
i tsu(RA).
~
~\xw
~W
'L
I~
~ ROW~EW~~c';~
_YYYlCXXXXX~~'U.XX;H:r.lCX_
ROW
_
_
VOH
Q
- - - - - - - - - - - - - - - - HI-Z - - - - - - - - - - - - - - - - - - - -
VOL
hidden refresh cycle timing
I
j4--REFRESH CYCLE~
r---MEMORY CYCLE---f
Q)
:::J
I j'WIRlI1 j'WIRHI1
c..
~
(I)
.o3
RAS
'<
en
c:
"'C
"'C
.....
o
c
(I)
<
1I
V,H
~
II
CAS
I
r-'W1RlI 1 i'W'RHI~
:
-ft 1i
~1,:~1i
II
CYCLE ~
~REFRESH
I
II
}f
I
r~
tRLCHR t .
II
II
I
\
.1
'~·rll
tW(CL)----------'-;....'
--1 ~1 .-~------------------~~IS~---~
ttU(CAI tsu(RA).., ~
_I
V,L
tsu(RA)
th(RA)
V,H
ADDRESS
V,L
c;"
--I
I ~th(RA)
F=:7.1~.IJiit'V""'iAAm.
th(CLCA)
I
~~
~~
tsu(rdl~
(I)
C/I
V,H
IN
,.
DE
V,L
VOH!
(
Q
VOL
t For devices with
VALID DATA
:\
>-
-----~~f----
CAS before RAS
refresh option only.
*Row address is required only for devices without CAS before RAS refresh option. Row address is "don't care" for devices with the CAS before RAS refresh
option.
11
4-82
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4256, TMS4257
262,144·8IT DYNAMIC RANDOM·ACCESS MEMORIES
automatic (CAS before RAS) refresh cycle timing
I. .
.-..-------tclrdl---------·~I
r--tWIRHI~
RAS
V,H - '
VIL
.
I
J1=-
-l,1
tCLRL-~l=""----------~f
I
CAS
t.-,.t-----twIRLI---......1
J.---tRLCHR~
¥
:I:----""\~
t/)
Q)
(.)
VOH
Q
.:;
HI-Z
Q)
VOL
C
.......
0
c.
c.
~
en
...>
0
E
Q)
~
"'C
c:
CO
~
C
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply
~he
best product possible.
14
TEXAS
INsrRUMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-83
c
-<
:::l
Q)
3
C=;'
:::JJ
l>
~
Q)
:::l
C.
~
CD
3
...
o
-<
VJ
r::::
"C
"C
...o...
c
CD
<
C=;'
CD
en
4-84
MOS
LSI
TMS4416. SMJ4416
16.384·WORD 8Y 4·81T DYNAMIC RAM
AUGUST 1980 - REVISED JANUARY 1984
•
16,384 X 4 Organization
•
Single +5·V Supply (10% Tolerance)
•
Performance Ranges:
'4416-12
'4416-15
'4416-20
•
•
•
•
ACCESS
TIME
ROW
ADDRESS
(MAX)
120 ns
150 ns
200 ns
G
ACCESS
TIME
COLUMN
ADDRESS
(MAX)
70 ns
80 ns
120 ns
READ
OR
WRITE
CYCLE
(MIN)
230 ns
260 ns
330 ns
Available Temperature Ranges*:
S . .. - 55°C to 1 00 °C
E ... -40°C to 85°C
L ... OOC to 70°C
CAS
W
DQ3
AO
RAS
A6
A5
Al
A2
A4
A3
VDD -" _ _. . J - A7
dOl
d
Ol
O"M
o
>
...
o
PIN NOMENCLATURE
AO-A7
New SMOS (Scaled-MOS) N-Channel
Technology
t/)
Q)
U
C
8 9 1011
0" M
<1'
2 1 1817
16
8 91011
3-State Unlatched Outputs
G to
DQ2
(TOP VIEW)
Long Refresh Period . . . 4 milliseconds
VSS
DQ4
DQl
READMODIFYWRITE
CYCLE
(MIN)
320 ns
330 ns
440 ns
TMS4416 .•. FPL PACKAGE
•
•
TMS4416 ..• NL PACKAGE
SMJ4416 •.. JD PACKAGE
(TOP VIEW)
Address Inputs
CAS
Column Address Strobe
DQ1-DQ4
Data In/Data Out
G
Output Enable
RAS
Row Address Strobe
+5-V Supply
VDD
VSS
Ground
IN
Write Enable
E
Q)
2
"C
c::
CO
2
New SMOS technology permits operation from a single + 5-V supply, reducing system power supply and decoupling
requirements, and easing board layout. IDD peaks have been reduced to 60 mA typical, and a -1-V input voltage
undershoot can be tolerated, minimizing system noise considerations. Input clamp diodes are used to ease system design.
Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS
in order to retain data. CAS can remain high during the refresh sequence to conserve power.
All inputs and outputs, including clocks, are compatible with Series 54/74 TTL. All address lines and data-in are latched on chip to simplify system design. Data-out is unlatched to allow greater system flexibility .
• M temperature range (- 55°C to 125°C) to be available in future.
4
Copyright © 1984 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
4-85
TMS4416, SMJ4416
16,384·WORD BY 4·BIT DYNAMIC RAM
The TMS4416 is offered in 18-pin plastic dual-in line and 18-pin plastic chip carrier packages. It is guaranteed for
operation from OOC to 70°C. The SMJ4416 is offered in 18-pin ceramic side-braze dual-in-line and 18-pin ceramic
chip carrier packages. It is available in - 55°C to 100°C and -: 40°C to 85 °C temperature ranges. Dual-in-line packages
are designed for insertion in mounting-hole rows on 300-mil (7,62 mm) centers.
operation
address (AO through A7)
..
C
'<
~
Q)
3
o·
Fourteen address bits are required to decode 1 of 16,384 storage locations. Eight row-address bits are set up on pins
AO through A7 and latched onto the chip by the row-address strobe (RAS). Then the six column-address bits are set
up on pins A 1 through A6 and latched onto the chip by the column-address strobe (CAS). All addresses must be stable
on or before the falling edges of RAS and CAS. RAS is similar to a chip enable in that it activates the sense amplifiers
as well as the row decoder. CAS is used as a chip select activating the column decoder and the input and output buffers.
write enable (Vii)
The read or write mode is selected through the write enable (W) input. A logic high on the W input selects the read
mode and a logic low selects the write mode. The write enable terminal can be driven from standard TTL circuits
without a pull-up resistor. The data input is disabled when the read mode is selected. When Iii goes low prior to CAS,
data-out will remain in the high-impedance state allowing a write cycle with G grounded.
data-in (Da 1 through Da4)
Co
Data is written during a write or read-modify write cycle. Depending on the mode of operation, the falling edge of
CAS or W strobes data into the on-chip data latches. These latches can be driven from standard TIL circuits without
a pull-up resistor. In an early-write cycle, W is brought low prior to CAS and the data is strobed in by CAS with setup
and hold times referrenced ~o this signal. In a delayed write or read-modify-write cycle, CAS will already be low, thus
the data will be strobed in by Wwith setup and hold times referenced to this signal. In delayed or read-modify-write,
G must be high to bring the output buffers to high impedance prior to i~pressing data on the I/O lines.
~
data-out (Da1 through Da4)
3
The three-state output buffer provides direct TTL compatibility (no pull-up resistor required) with a fan-out of two
Series 54/74 TTL loads. Data-out is the same polarity as data-in. The output is in the high-impedance (floating) state
until CAS is brought low. In a read cycle the output goes active after the access time interval talC) that begins with
the negative transition of CAS as long as ta(R) and talE) are satisified. The output becomes valid after the access
time has elapsed and remains valid while CAS and G are low. CAS or G going high returns it to a high impedance
state. In an early-write cycle, the output is always in the high impedance state. In a delayed-write or read-modifywrite cycle, the output must be put in the high impedance state prior to applying data to the DQ input. This is accomplished by bringing G high prior to applying data, thus satisfying tGHD .
lJ
l>
~
Q)
~
CD
o
.,
'<
en
c:
'C
'C
.,o
....
c
iG)
CD
output enable
C/I
The G controls the impedance of the output buffers. When Gis high, the buffers will remain in the high impedance
state. Bringing Glow during a normal cycle will activate the output buffers putting them in the low impedance state.
It is necessary for both RAS and CAS to be brought low for the output buffers to go into the low impedance state.
Once in the low impedance state, they will reamin in the low impedance state until G or CAS is brought high.
Cr-
RAS (5)
0
E
CAS (16)
23C22
W(4)
G' (1)
Q)
~
"'C
c:
C'O
OQl (2)
A.Z26
~
-
0
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10-1.
l4
TEXAS
INSfRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-87
TMS4416, SMJ4416
16,384·WDRD BY 4·BI1 DYNAMIC RAM
functional block diagram
RAS
==::j
c~ ~~_____T_IM_IN_G_&__C_ON_T_R_O_L__~
AD
Al
ROW
DECODE
A2
ROW
ADDRESS
BUFFERS
(81
'\3
A4
A5
(1/21 MEMORY ARRAY
DUMMY CELLS
(1/214 OF 256 COLUMN DECODE
A6
A7
SENSE
AMP
CONTR
'----
c
' - - - ·COLUMN
ADDRESS
BUFFERS
(61
'<:::s
Q)
3
(;'
:c
l>
r--
I
r--f-
(41
I/O
BUFFERS
G
(41
DATA
OUT
REG.
4
DQ
f--+4
DUMMY CELLS
C-
---
~
s:
Q)
DATA IN
REG.
--
256 SENSE REFRESH
AMPS
(1/214 OF 256 COLUMN DECODE
5p
ROW
DECODE
(1/21 MEMORY ARRAY
Al-A6
:::s
c..
s:
CD
3
absolute maximum ratings over operating free-air temperature range (unless otherwis~ noted) t
o
Voltage on any pin except VOO and data out (see Note 1) ........................... -1.5 V to 10 V
Voltage on VOO supply and data out with respect to VSS .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. -1 V to 6 V
Short circuit output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1 W
Operating free-air temperature range: TMS' ................ '.........................
to 70°C
Operating case temperature range: SMJ' - S version. . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55°C to 100°C
- Eversion ............................... -40°C to 85°C
Storage temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 65°C to 150°C
~
'<
CJ)
t:
'C
'C
ooe
o
....
~
c
CD
<
c;"
t Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
CD
(/I
NOTE 1: All voltage values in this data sheet are with respect to VSS'
18
4-88
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4416
16,384-WORD BY 4-BI1 DYNAMIC RAM
recommended operating conditions
TMS4416
PARAMETER
MIN
4.5
Supply voltage, VOO
NOM
5
Supply voltage, VSS
MAX
5.5
UNIT
V
0
High-level input voltage, VIH
I
I
V
4.8
VOO = 4.5 V
2.4
VOO = 5.5 V
2.4
5.8
VIK
0
0.8
70
Low-level input voltage, VIL (see Note 2)
Operating free-air temperature, T A
V
V
°C
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic voltage levels only.
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIK
Input clamp voltage
VOH
VOL
High-level output voltage
Low-level output voltage
II
Input current (leakage)
10
Output current (leakage)
1001
Average operating current
during read or write cycle
1002t
Standby current
TMS4416-12
Typt
MAX
MIN
11= -15 mA,
-1.2
see Figure 1
10H = -2 mA
en
0.4
Q)
(J
V
'S;
±10
p.A
C
±10
p.A
54
mA
CJ)
5
mA
o
46
mA
Q)
VOO = 5 V,
All other pins = 0 V
VOO = 5 V, CAS high
At tc = minimum cycle
3.5
Average refresh current
RAS cycling,
CAS high
tc(P) = minimum cycle,
Average page-mode
1004
RAS low,
CAS cycling
current
o
c.
C.
:::l
>~
E
Q)
tc = minimum cycle,
.1003
....
~
Vo = 0.4 V to 5.5 V,
After 1 memory cycle,
V
V
2.4
10L = 4.2 mA
VI = 0 V to 5.8 V,
RAS and CAS high
UNIT
46
mA
~
"'C
I:
CO
~
-
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-89
TMS4416
16,384·WORD BY 4·81T DYNAMIC RAM
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
VIK
TEST CONDITIONS
Input clamp voltage
High-level output voltage
VOL
Low-level output voltage
II
Input current (leakage)
Output current (leakage)
1002:t
IOH
=;
IOL
~
-2 mA
4.2 mA
VI ~ 0 V to 5.8 V,
VOO ~ 5 V,
All other pins ~ 0 V
Vo ~ 0.4 V to 5.5 V,
VOO ~ 5 V, CAS high
Average operating current
1001
At tc
during read or write cycle
~
minimum cycle
After 1 memory cycle,
Standby current
RAS and CAS high
tc
1003
Typt
II ~ -15 mA,
see Figure 1
VOH
10
TMS4416-15
MIN
Average refresh current
~
MAX
TMS4416-20
Typt
MAX
MIN
-1.2
UNIT
-1.2
V
0.4
0.4
V
±10
±10
Il A
±10
±10
Il A
2.4
2.4
V
40
48
35
42
mA
3.5
5
3.5
5
mA
2&
40
21
34
mA
25
40
21
34
mA
minimum cycle,
RAS cycling,
CAS high
Average page-mode
1004
current
t All typical values are at T A
tc(P)
~
minimum cycle,
RAS low,
CAS cycling
=
25°C and nominal supply voltages.
tVIL
o
0
30
0
40
ns
.~
"-
tOFF
E
Q)
"0
t:
m
~
«
a:
(.)
'Em
t:
>
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-91
TMS4416
16,384·WORD BY 4·BIT DYNAMIC RAM
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
TMS4416-12
SYMBOL
MIN
MAX
UNIT
tc(P)
Page mode cycle time
tpc
120
ns
tc(rd).
Read cycle time"
tRC
230
ns
tc(W)
Write cycle time
twc
230
ns
tc(rdW)
tw(CH)
Read-write/read-modify-write cycle time
Pulse width, CAS high (precharge time)··
tRWC
tcp
320
40
ns
ns
tw(CL)
Pulse width, ~ low T
tCAS
70
twlRHI
Pulse width ~ high (precharge time)
tRP
80
twIRL!
Pulse width, RAS low ~
120
tw(W)
Write pulse width
tRAS
twp
tt
tsu(CAl
Transition times (rise and fall) for RAS and
Column address setup time
tsu(RA)
Row address setup time
tsu(D)
Data setup time
tsu(rd)
'<
CAS
10,000
ns
ns
10,000
30
ns
ns
tASC
3
0
tASR
0
tDS
0
ns
Read command setup time
tRCS
0
ns
tsu(WCHI
tsu(WRH)
Write command setup time before CAS high
Write command setup time before RAS high
tCWL
tRWL
50
50
ns
ns
Q)
th(CLCAI
Column address hold time after CAS low
tCAH
35
ns
3
thlRA)
Row address hold time
tRAH
15
ns
(i'
th(RLCA)
Column address hold time after RAS low
tAR
85
ns
lJ
th(CLDl
Data hold time after CAS low
tDH
40
ns
thIRLDl
th(WLD)
Data hold time after RA'S low
Data hold time after W low
tDHR
~
100
30
ns
ns
Q)
th(RHrd)
Read command hold time after RAS high
tRRH
10
ns
::1
Co
th(CHrd)
Read command hold time after CAS high
tRCH
0
ns
th(CLW)
Write command hold time after CAS low
tWCH
40
ns
th(RLW)
tRLCH
Write command hold time after RAS low
Delay time, 'RAS" low to ~ high
tWCR
tCSH
100
150
ns
ns
tCHRL
Delay time, ~ high to 1U\S low
tCRP
0
ns
tCLRH
Delay time, CAS low to RAS high
tRSH
80
ns
tCWD
120
ns
tRCD
20
o
::1
l>
~
CD
3
o...
'<
tn
Delay time,
tCLWL
r:::
"C
"C
tRLCL
o
-~
CAS
low to
tDH
W low
(read, modify-write-cycle only) .... *
Delay time, RAS low to CAS low
(maximum value specified only to guarantee access time)
Delay time,
'RAS" low
to
tT
W low
50
ns
ns
ns
50
ns
tRLWL
(read, modify-write-cycle only) * * *
tRWD
170
tWLCL
Delay time, W low to CAS low (early write cycle)
twcs
-5
ns
tGHD
trf
Delay time, G high before data applied at DQ
Refresh time interval
30
ns
ms
tREF
ns
4
" Note: All cycle times assume tt =5 ns.
Page mode only .
•• 'Necessary to insure G has disabled the output buffers prior to applying data to the device.
tin a read-modify-write cycle, tClWl and tsu(WCHI must be observed. Depending on the user's transition times, this may require additional CAS low time tW(Cl}'
,:tIn a read-modify-write cycle, tRlWl and tsu(WRHI must be observed. Depending on the user's transition times, this may require additional RASlow time twIRl)'
4-92
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4416
16,384-WORD BY 4-BIT DYNAMIC RAM
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
PARAMETER
SYMBOL
tRCD
20
190
230
ns
-5
30
-5
40
ns
tc(W)
tc(rdW)
Write cycle time
twc
tw(CH)
Pulse width, CAS high (precharge time) * *
tw(CL)
Pulse width, CAS low t
Pulse width RAS high (precharge time)
tCAS
Pulse width, RAS low*
Write pulse width
tRAS
tw(W)
tt
Transition times (rise and fall) for RAS and CAS
tsu(CA)
Column address setup time
tASC
tsu(RA)
Row address setup time
tASR
tsu(D)
Data setup time
tsu(rd)
Read command setup time
tRCS
tsu(WCH)
Write command setup time before CAS high
tCWL
tsu(WRH)
Write command setup time before RAS high
tRWL
th(CLCA)
Column address hold time after CAS low
tCAH
th(RA)
Row address hold time
tRAH
th(RLCA)
Column address hold time after RAS low
th(CLD)
Data hold time after CAS low
tDH
th(RLD)
Data hold time after RAS low
tDHR
tRWC
tcp
tRP
twp
tT
tDS
tAR
th(WLD)
Data hold time after W low
th(RHrd)
Read command hold time after RAS high
tRRH
th(CHrd)
Read command hold time after CAS high
tRCH
th(CLW)
Write command hold time after CAS low
tWCH
tDH
th(RLW)
Write command hold time after RAS low
tWCR
tRLCH
Delay time,RAS low to CAS high
tCSH
tCHRL
Delay time, CAS high to RAS low
tCRP.
tCLRH
Delay time, CAS low to RAS high
Delay time, CAS low to W low
Delay time, RAS low to CAS low
(maximum value specified only to guarantee access time)
UNIT
150
tRC
tRLCL
MAX
120
Read cycle time *
(read, modify-write· cycle only) •••
MIN
tRSH
tc(rd)
tCLWL
TMS4416-20
tCWD
tpc
twiRl)
MAX
210
330
330
440
80
120 10,000
120
200 10,000
50
50
3
0
0
0
0
80
80
50
25
130
80
160
50
10
0
80
160
200
0
120
Page mode cycle time
tw(RH)
MIN
140
260
260
360
50
80 10,000
100
150 10,000
40
3
50
0
0
0
0
60
60
40
20
110
60
130
40
10
0
60
130
150
0
80
tc(P)
Read-write/read·modify·write cycle time
TMS4416-15
Delay time, RAS low to W low
tRLWL
(read modify-write-cYcie only) • * *
tRWD
tWLCL
Delay time, W low to CAS low (early write cycle)
twcs
tGHD
Delay time, G high before data applied at DQ
trf
Refresh time interval
tREF
70
4
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t/)
Q)
ns
CJ
-S
ns
Q)
ns
c
ns
...
+oJ
ns
o
ns
0.
0.
:1
ns
ns
en
...>-
ns
ns
o
ns
E
ns
Q)
ns
~
ns
"C
c:::
ns
80
CO
~
ns
-
ms
C
Note: All cycle times assume tt = 5 ns.
Page mode only.
Necessary to insure 13 has disabled the output buffers prior to applying data to the dev ice.
tin a read·modify·write cycle, tCLWL and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional
CAS low time tW(CL)'
:j: In a read·modify·write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional
RAS low time twiRL)'
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-93
SMJ4416
16,384·WDRD BY 4·B11 DYNAMIC RAM
recommended operating conditions
SMJ4416
PARAMETER
S VERSION
MIN
4.5
Supply voltage, VOO
NOM
5
Supply voltage, VSS
MAX
5.5
MIN
4.5
EVERSION
UNIT
NOM
5
V
0
High-level input voltage, VIH
I
I
VOO
VOO
= 4.5 V
= 5.5 V
Low-level input voltage, VIL (see Note 2)
Operating case temperature, TC
MAX
5.5
0
V
2.4
2.4
4.8
5.8
2.4
2.4
4.8
5.8
VIK
-55
0.8
VIK
-40
0.8
V
85
°c
100
V
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum. is used in this data sheet for logic voltage levels only.
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
o
VIK
Input clamp voltage
::::J
VOH
High-level output voltage
3
c;"
VOL
Low-level output voltage
:c
II
Input current (leakage)
10
Output current (leakage)
'<
Q)
II = -15 mA,
see Figure 1
= -2 mA
10L = 4.2 mA
VI = 0 V to 5.8 V,
VOO = 5 V,
All other pins = 0 V
Vo = 0.4 V to 5.5 V,
VOO = 5 V, CAS high
10H
»
~
Q)
Average operating current
::::J
C.
IDOl
~
CD
3
o...
At tc
during read or write cycle
1002:t:
Standby current
1003
Average refresh current
V
V
minimum cycle
RAS and CAS high
=
-1.2
2.4
UNIT
3.5
0.4
V
±10
/LA
±10
/LA
54
mA
5
mA
46
mA
46
mA
minimum cycle,
RAS cycling,
CAS high
(J')
c:
tc(P)
Average page-mode
'C
'C
1004
........o
o
t All typical values are at T C
tVIL
2: -
=
=
minimum cycle,
RAS low,
CAS cycling
current
CD
<
c;"
=
After 1 memory cycle,
tc
'<
SMJ4416-12
Typt MAX
MIN
25 DC and nominal supply voltages.
0.6 V on all inputs.
CD
rJ)
4-94
. TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
SMJ4416
16,384·WORD BY 4·BIT DYNAMIC RAM
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIK
Input clamp voltage
11= -15 mA,
see Figure 1
VOH
High-level output voltage
10H = -2mA
VOL
Low-level output voltage
10L = 4.2 mA
SMJ4416-15
Typt
MAX
MIN
SMJ4416-20
Typt
MAX
MIN
-1.2
2.4
UNIT
-1.2
V
2.4
V
0.4
0.4
V
±10
±10
p.A
±10
±10
p.A
VI = 0 V to 5.8 V,
II
Input current (leakage)
10
Output current (leakage)
1001
Average operating current
during read or write cycle
VOO = 5 V,
A" other pins = 0 V
Va = 0.4 V to 5.5 V,
VDO = 5 V, CAS high
At tc = minimum cycle
After 1 memory cycle,
1002*
Standby current
1003
Average refresh current
RAS and CAS high
40
48
35
42
mA
3.5
5
3.5
5
mA
25
40
21
34
mA
tc = minimum cycle,
RAS cycling,
Average page-mode
1004
current
t A" typical values are at TC
=
en
Q)
CAS high
(,)
.:;;
tc(P) = minimum cycle,
25
RAS low,
CAS cycling
40
21
34
mA
Q)
C
......
o
c.
25 DC and nominal supply voltages.
C.
:::J
*VIL ~ -0.6 V on a" inputs.
en
...o>-
capacitance over recommended supply voltage range and operating case temperature range, f = 1 MHz
SMJ4416
TypT
MAX
PARAMETER
UNIT
Ci(A)
Input capacitance, address inputs
5
7
pF
Ci(RC)
Input capacitance, strobe inputs
8
10
pF
Ci(W)
Input capacitance, write enable input
8
10
pF
Cito
Input/output capacitance, data ports
8
10
pF
t A" typical values are at T C
= 25 DC
E
Q)
~
"'C
I:
CO
~
-
C
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-95
SMJ4416
16,384·WORD BY 4·B11 DYNAMIC RAM
switching characteristics over recommended supply voltage range and operating case temperature range
ta(C)
CL
Access time from CAS
Load
=
2 Series 74 TTL gates
Access time from RAS
ta(G)
Access time after Glow
CL = 100 pF,
Load = 2 Series 74 TTL gates
Output disable time after CAS high
CL = 100 pF,
Load'" 2 Series 74 TTL gates
tdis(G)
after Ghigh
ta(C)
TEST CONDITIONS
CL
Access time from CAS
=
Load
tRLCL
ta(R)
Access time from RAS
CL
=
CL
Access time after Glow
tdis(CH) Output disable time after CAS high
0tdis(G)
Output disable time
after G high
=
=
Load
74 TTL gates
100 pF
ns
tRAC
120
ns
30
ns
0
30
ns
0
30
ns
tOFF
SMJ4416-15
SMJ4416·20
MIN
MIN
MAX
MAX
UNIT
80
120
ns
tRAC
150
200
ns
40
50
ns
2 Series 74 TTL gates
2 Series 74 TTL gates
2 Series 74 TTL gates
tOFF
CL = 100 pF,
Load = 2 Series 74 TTL gates
3
...
o
-<
en
c
'C
'C
o...
r+
c
CD
<
0"
CD
en
4-96
UNIT
tCAC
100 pF,
=
MAX
70
100 pF,
=
Load
CL
= 2 Series
= MAX,
=
Load
ta(G)
100 pF,
ALT.
SYMBOL
MIN
tCAC
CL = 100 pF,
Load = 2 Series 74 TTL gates
PARAMETER
s:CD
100 pF,
ta(R)
Output disable time
::::l
SYMBOL
tRLCL = MAX,
CL = 100 pF
Load = 2 Series 74 TTL gates
tdis(CH)
CI)
=
SMJ4416-12
ALT.
TEST CONDITIONS
PARAMETER
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
0
30
0
40
ns
0
30
0
40
ns
SMJ4416
16,384-WORD BY 4-B11 DYNAMIC RAM
timing requirements over recommended supply voltage range and operating case temperature range
ALT.
PARAMETER
SYMBOL
120
tRCQ
20
tRWD
170
ns
twcs
-5
30
ns
-e
ns
C'O
ms
>
tC(WI
Write cycle time
twc
tc(rdWI
Read-write/read-modify-write cycle time
tw(CH)
Pulse width, CAS high (precharge time)··
twlCLI
Pulse width, CAS low T
Pulse width RAS high (precharge time)
tCAS
twIRL)
Pulse width, RAS low+
tRAS
twlWI
tt
Write pulse width
twp
Transition times (rise and fall) for RAS and CAS
tsulCAI
tsuIRA)
Column address setup time
Row address setup time
tsu(D}
Data setup time
tsulrdl
Read command setup time
tRCS
tsu(WCH)
Write command setup time before CAS high
tCWL
tsu(WRH)
th(CLCA)
Write command setup time before RAS high
tRWL
tCAH
·tRWC
tcp
tRP
tT
tASC
tASR
tDS
tRAH
ttl/RAJ
th(RLCA)
Column address hold time after RAS low
th(CLD)
Data hold time after CAS low
tDH
th(RLD)
Data hold time after RAS low
tDHR
th(WLD)
thlRHrdl
Data hold time after W low
Read command hold time after RAS high
tDH
tRRH
th(CHrd)
Read command hold time after CAS high
tRCH
thlCLWI
Write command hold time after CAS low
tWCH
thIRLW)
Write command hold time after RAS low
tWCR
Delay time, RAS low to CAS high
tCSH
tCRP
tRLCH
tCHRL
tCLRH
tAR
Delay time, CAS high to RAS low
Delay time, CAS low to RAS high
Delay time, CAS low to W low
tCLWL
(read, modify-write-cycle only)···
Delay time, RAS low to CAS low
tRLCL
tRLWL
(maximum value specified only to guarantee access time)
Delay time, RAS low to W low
(read, modify-write-cycle only)···
tWLCL
Delay time, W low to CAS low (early write cycle)
tGHD
Delay time, G high before data applied at DO
trf
Refresh time interval
UNIT
tRSH
tpc
tRC
CAS" low
MAX
tCWD
Page mode cycle time
Read cycle time·
Column address hold time after
Row address hold time
MIN
120
230
230
320
40
70 10,000
80
120 10,000
30
3
50
0
0
0
0
50.
50
35
15
85
40
100
30
10
0
40
100
150
0
80
tC(PI
tc(rd)
twIRH)
SMJ4416·12
tREF
ns
ns
ns,
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
en
ns
.s:
Q)
U
ns
ns
Q)
ns
o
ns
~
ns
o
ns
ns .
C.
:::l
c.
en
ns
...o>
ns
ns
E
Q)
:!
ns
ns
ns
"0
t:
ns
50
4
C'O
:!
cd:
a:
ns
u
t:
o
•
Note: All cycle times assume tt = 5 ns,
•• Page mode only .
•• 'Necessary to insure IT has disabled the output buffers prior to applying data to the device.
tin a read-modify-write cycle, tCLWL and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAS low time tW(CL)'
*In a read-modify-write cycle, tRLWL and.tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAS low time twIRL)'
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-97
SMJ4416
16,384·WORD BY 4·B11 DYNAMIC RAM
timing requirements over recommended supply voltage range and operating case temperature range
ALT.
PARAMETER
SYMBOL
SMJ4416-15
MIN
SMJ4416-20
UNIT
MAX
MIN
210
330
330
ns
440
ns
MAX
th(RHrd)
Read command hold time after RAS high
tRRH
th(CHrd)
Read command hold time after CAS high
tRCH
th(ClW)
Write command hold time after CAS low
tWCH
th(RlW)
Write command hold time after RAS low
tWCR
tRlCH
Delay time,RAS low to CAS high
tCSH
o...
tCHRl
Delay time, CAS high to RAS low
tCRP
tClRH
Delay time, CAS low to RAS high
tRSH
140
260
260
360
50
80 10,000
100
150 10,000
40
50
3
0
0
0
0
60
60
40
20
110
60
130
40
10
0
60
130
150
0
80
rn
tClWl
tCWD
120
tRCD
20
tRWD
190
230
ns
twcs
-5
30
-5
40
ns
tc(P)
Page mode cycle time
tpc
tc(rd)
Read cycle time'
tRC
tc(W)
tc(rdW)
Write cycle time
twc
tw(CH)
Pulse width, CAS high (precharge time)' •
tw(Cl)
Pulse width, CAS low t
twIRH)
Pulse width RAS high (precharge time)
twiRl)
tw(W)
Pulse width, RAS low t
Write pulse width
tt
Transition times (rise and fall) for RAS and CAS
tsu(CA)
Column address setup time
tASC
tsu(RA)
Row address setup time
tASR
tsu(D)
Data setup time
tsu(rd)
Read command setup time
tRCS
tsu(WCH)
Write command setup time before CAS high
tCWl
tsu(WRH)
Write command setup time before RAS high
tRWl
th(ClCA)
Column address hold time after CAS low
tCAH
tRAH
Q)
::s
c..
s:
CD
3
<
Read·write/read·modify·write cycle time
tRWC
tcp
tCAS
tRP
tRAS
twp
tT
tDS
th(RA)
Row address hold time
th(RlCA)
Column address hold time after RAS low
th(ClD)
Data hold time after CAS low
tDH
th(RlD)
Data hold time after RAS low
tDHR
th(WlD)
Data hold time after W low
c:::
I
tAR
tDH
Delay time, Cf.S low to W low
(read, modify·write·cycle only) •••
Delay time, RAS low to CAS low
'C
'C
tRlCl
o
......
(maximum value specified only to guarantee access time)
Delay time, RAS low to W low
o
CD
c::
c;'
CD
III
tRlWl
(read modify-write-cycle only) •••
tWlCl
Delay time, W low to CAS low (early write cycle)
tGHD
Delay time, G high before data applied at DQ
trf
Refresh time Interval
tREF
ns
ns
80
120 10,000
120
200 10,000
50
3
50
4
ns
ns
ns
ns
0
ns
0
0
0
80
80
50
25
130
80
160
50
10
0
80
160
200
0
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
150
70
ns
ns
25
ns
80
ns
ns
4
ms
Note: All cycle times assume tt = 5 ns.
Page mode only.
Necessary to insure G has disabled the output buffers prior to applying data to the device.
t i n a read·modify·write cycle. tCLWL and tsu(WCH) must be observed. Depending on the user's transition times. this may require additional
CAS low time tW(CL)'
:j: In a read-modify·write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional
RAS low time twiRL)'
4-98
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
1MS4416, SMJ4416
16,384·WORD BY 4·B11 DYNAMIC RAM
PARAMETER MEASUREMENT INFORMATION
Vee
I
NOTE:
OUTPUT(S)
REMAINING {
IN~~;~
OPEN
Each input is tested separately,
FIGURE 1 - INPUT CLAMP VOLTAGE TEST CIRCUIT
read cycle timing
en
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C
~
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0.
::::J
en
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o
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c:
>
C
Hi-Z
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VOL
IVIH
G
VIL
------4t
VAll D OUTPUT} ) . - - - - - - -
.1
ta(R)
,I
~ tdis(G)
ta(G)-r--t
I
'\
I
t
TEXAS
INSTRUMENTS
,POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-99
TMS4416, SMJ4416
16,384-WORD BY 4-BIT DYNAMIC RAM
early write cycle timing
c
<:::J
Q)
3
0°
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»
~
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CD
3
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<
(J)
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c
CD
<
0°
CD
Cfj
4-100
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4416, SMJ4416
16,384·WORD BY 4·BIT DYNAMIC RAM
write cycle timing
tJ)
Q)
o
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c
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......
o
c.
C.
::::J
en
...>
o
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Q)
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c:
DO
CO
~
C
TEXAS
INSTRuMENlS
POST OFFice BOX 225012 • DALLAS, TeXAS 75265
4-101
TMS4416, SMJ4416
16,384-WORD BY 4-BI1 DYNAMIC RAM
read-write/read-modify-write cycle timing
AO-A7
DQ
VILIVOL .........¥...~..K...&..JI~-¥........_
......' "
~
___;.,,;.;.,,;;_ _
I
ta(GI~
I
~::--------~{,..',-
4-102
~ tGHD
I
__t
TEXAS
INsrRuMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
RAs
VIH
VIL
'0
-{ri~
:
(,
II
tRLCH
--i '-
tt
I.
tc(P)
I
I I..... tRLCL...:...I
I
I I
CAS
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:
VIL
II
th(RA)
;
H.
I I
z
AO·A7
z
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I
I--tCLRH---I
I
..
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I
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---1<1
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I
I
VIH
VIL
II I
th(CLCA)
I
II
.
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I
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II
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II
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I
I
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I
I I
,
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I
I
I
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,I
I
I ~
I
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I
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I
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OUTPUT
r--'-
t
I
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th(CLCA)
I
I
I --Ir.tSU(~A)
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I
th(CLCA)
I
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G
I
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w
x
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DO
-
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x-JVVVVV\......,......"
VIL 'vvV"V\f,.
I I
I
~
r-
I
r
~
.th(CLD)
~th(RLD)----"
VIH
j.-..l.tGHD
,..
_
\1\-_ _ _ _ _ _ _ _ _ _ __
•
G
vlLJ
NOTE: A read cycle or a read-modify-write cycle can be intermixed with write cycles as long as read and read-modify-write timing specifications are not violated_
1:'
Ql
tC
(()
3
o
c..
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VIH~
AAs
VIL
I
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~
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~
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tsu(RAJ
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~ tw(CLJ
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I
T--i
~
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th(RAJ
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t
tw(RLJ
I
I
tw(CLJ
-,
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c..
I
~
IJ.- tcHRL-./
~
I
ti.-tt
I
tW(CHJ----..j
~
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r+
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5'
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I I
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th(CLCAJ
H-tsU(CAJ
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I
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II
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Ql
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3o
~
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tcLRH
~
~
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I
' I..---.t-
*tsU(CAJ
---::L........".-i=
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-../
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en
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.
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VIL/VOL _ _ ~~ ~, _ _ OUTPUT!
I
ta(GJ~
I
G
I
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,
ta(GJ~
I
't
co
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1001 VS CYCLE TIME
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E
(t)
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It
It
Z
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en
90 ns
80
70
60
80 ns
50
w
40
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30
>
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§
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~~
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•..'"Yt>
~
20
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60 ns
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50 ns
~
40 ns
~
" r-...... i'r-..
I .........
I
C
O~~
;/
.LV
-
o
E
Q)
G
Output Enable
~
RAS
Row Address Strobe
"C
VDD
+5-V Supply
VSS
Ground
IN
Write Enable
t:
ca
::?E
-
C
This device features maximum RAS access times of 100 ns, 120 ns, 1 50 ns, or 200 ns. Typical power dissipation
as low as 250 mW operating and 12.5 mW standby.
New SMOS technology permits operation from a single + 5-V supply, reducing system power supply and decoupling
requirements, and easing board layout. IDD peaks are 150 mA typical, and a -1-V input volta~e undershoot can be
tolerated, minimizing system noise considerations.
All inputs and outputs, including clocks, are compatible with Series 74 TTL. All address and data-in lines are latched
on chip to simplify system design. Data-out is unlatched to allow greater system flexibility.
The TMS4464 is offered in an 18-pin dual-in-line ceramic or plastic package and is guaranteed for operation from
to 70°C. These packages are designed for insertion in mounting-hole rows on 300-mil (7,62 mm) centers.
o °C
Copyright © 1984 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains Information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-107
TMS4464
65,536·WORD BY 4-BIT DYNAMIC RAM
operation
address (AO through A7)
Sixteen address bits are required to decode 1 of 65,536 storage locations. Eight row-address bits are set up on pins
AO through A7 and latched onto the,chip by the row-address strobe (RAS). Then the eight column-address bits are
set up on Pins AO through A7 and latched onto the chip by the column-address strobe (CAS). All addresses must
be stable on or before the falling edges of RAS and CAS. RAS is similar to a chip enable in that it activates the sense
amplifiers as well as the row decoder. CAS is used as a chip select activating the column decoder and the input and
output buffers.
write enable (W)
The read or write mode is selected through the write enable (W) input. A logic high on the W input selects the read
mode and a logic low selects the write mode. The write enable terminal can be driven from standard TTL circuits
without a pull-up resistor. The data input is disabled when the read mode is selected. When W goes iow prior to CAS,
data-out will remain in the high-impedance state for the entire cycle permitting common 1/0 operation.
data-in (DO 1-004)
Data is written during a write or read-modify write cycle. Depending on the mode of operation, the falling edge of
CAS or W strobes data into the on-chip data latches. These latches can be driven from standard TTL circuits without
a pull-up resistor. In an early-write cycle, W is brought low prior to CAS and the data is strobed in by CAS with setup
and hold times referenced to this signal. In a delayed write or read-modify write cycle, CAS will already be low, thus
the data will be strobed in by Vi with setup and hold times referenced to this signal. In delayed or read-modify-write,
G must be high to bring the output buffers to high impedance prior to impressing data on the I/O lines.
data-out (001-004)
Q)
::J
Q.
s:
(1)
3
o...
The three-state output buffer provides direct TTL compatibility (no pull-up resistor required) with a fan-out of two
Series 74 TTL loads. Data-out is the same polarity as data-in. The output is in the high-impedance (floating) state
until CAS is brought low. In a read cycle the output goes active after the access time interval talC) that begins with
the negative transition of CAS as long as ta(R) and ta(G) are satisfied. The output becomes valid after the access
time has elapsed and remains valid while CAS and IT are low. CAS or G going high returns it to a high-impedance
state. In a delayed-write or read-modify-write cycle, the output must be put in the high impedance state prior to applying data to the DQ input. This is accomplished by bringing G high prior to applying data, thus satisfying tGHD ..
'<
output enable (3)
c:
The G controls the impedance of the output buffers. When IT is high, the buffers will remain in the high impedance
state. Bringing Glow during a normal cycle will activate the output buffers putting them in the low impedance state.
It is necessary for both RAS and CAS to be brought low for the output buffers to go into the low impedance state.
Once in the low impedance state they will remain in the low impedance state until G or CAS is brought high.
en
"C
"C
o...
r+
c
(1)
<
(:;.
(1)
til
refresh
A refresh operation must be performed at least once every four milliseconds to retain data. This can be achieved by
strobing each of the 256 rows (AO-A7). A normal read or write cycle will refresh all bits in each row that is selected.
A RAS-only operation can be used by holding CAS at the high (inactive) level, thus conserving power as the output
buffer remains in the high-impedance state. Hidden refresh may be performed while maintaining valid data at the output pin. This is accomplished by holding CAS at VIL after a read operation and cycling RAS after a specified pre-charge
period, similar to a "RAS-only" refresh cycle.
CAS-before-RAS refresh (optional)
The optional CAS-before-RAS refresh is utilized by bringing CAS low earlier than RAS (see parameter tCLRL) and holding
it low after RAS falls (see parameter tRLCHR). For successive CAS-before-RAS refresh cycles, CAS can remain low
while cycling RAS. The external address is ignored and the refresh address is generated internally. For devices with
this option, the external address is also ignored during the hidden refresh cycles.
4-108
,
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012'. OALLAS, TEXAS 75265
"
TMS4464
65,536-WORD 8Y 4-81T DYNAMIC RAM
page-mode
Page-mode operation allows effectively faster memory access by keeping the same row address and strobing random
column addresses onto the chip. Thus, the time required to setup and strobe sequential row addresses for the same
page is eliminated. The maximum number of columns that can be addressed is determined by tw(RL), the maximum
RAS low pulse width. For example, with a minimum cycle time (tc(P) = 110 ns) approximately 90 of the 256 columns
can be accessed.
power-up
To achieve proper device operation, an initial pause of 200 p.s is required after power-up followed by a minimum of
eight initialization cycles.
logic symbol t
t/)
AO
A1
A2
A3
A4
(14)
(13)
(12)
(11)
(8)
(7)
A5
(6)
A6
(10)
A7
RAM 64K X 4
2008/2100
Q)
(,)
oS
Q)
C
0
A-65535
....
~
0
c..
c..
:::s
en
>~
RAS
0
E
(5)
Q)
~
CAS
(16)
23C22
(4)
W
G (1)
OQ1
"C
C
ro
~
<:(
(2)
A.Z26
(3)
OQ2
OQ3 (15)
OQ4 (17)
a:
(,)
°E
ro
C
>-
C
t This symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and IEC. See explanation on page 10-1.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-109
TMS4464
65,536-WORD BY 4-BIT DYNAMIC RAM
functional block diagram
t
I
~1
TIMING AND CONTROL
--
r--
ADDRESS
BUFFERS
ROW
I--
~
ri
-I
ROW
o
-<::::J
Q)
3
n°
::c
:t>
COLUMN
A3
ADDRESS
BUFFERS
A4
(8)
A5
ROW
DECODE
256 SENSE AMPS
----
E
COLUMN DECODE
32K ARRAY
~
32K ARRAY
DECODE
A1
A2
256 SENSE AMPS
256 SENSE AMPS
32K ARRAY
r
AD
32K ARRAY
DECODE
I-
(8)
,-
I
..!.1
32K ARRAY
ROW
W
t t
t
32K ARRAY
ItO
BUFFERS
(4)
~
DATA
OUT
REG
~
1-
DATA
IN
REG
~~
DQ1-DQ4
256 SENSE AMPS
i--
32K ARRAY
A6
ROW
DECODE
32K ARRAY
A7
s:
Q)
::::J
c..
s:
CD
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) t
3
o...
-<
Voltage on any pin including VDD supply (see Note 1) ...............................
-1 V to 7 V
Short circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 W
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OOC to 70 0 C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
- 65'oC to 1 50 °C
en
s::::
"C
"C
o
...
r+
c
CD
<
n°
CD
t Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values in this data sheet are with respect to VSS.
recommended operating conditions
C/I
PARAMETER
Supply voltage, VOO
MIN
NOM
MAX
4.5
5
5.5
High-level input voltage, VIH
2.4
Low-level input voltage, VIL (see Note 2)
-1
0
Operating free-air temperature, T A
NOTE 2:
4-110
V
V
0
Supply voltage, VSS
UNIT
VOO+0.3
0.8
70
V
V
°C
The algebraic convention, where the more negative (less positive) limit is designated as maximum, is used in this data sheet for logic voltage levels only.
TEXAS
INSTRUMENTS
POST OFFICE 80X 225012 • DALLAS. TEXAS 75265
TMS4464
65,536·WORD BY 4·BIT DYNAMIC RAM
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VOH
High-level output voltage
10H = -5 mA
VOL
Low-level output voltage
10L = 4.2 mA
II
Input current (leakage)
VI=O V to 5.8 V, VOO=5 V,
All other pins = 0 V to 5.8 V
10
Output current (leakage)
TMS4464-10
TVpt
MAX
TMS4464-12
TVpt
MAX
MIN
MIN
2.4
2.4
UNIT
V
0.4
0.4
V
±10
±10
p,A
±10
±10
p,A
Va = 0 V to 5.5 V,
VOO = 5 V, '
CAS high
1001
1002
Average operating current
during read or write cycle
tc = minimum cycle
After 1 memory cycle,
Standby current
RAS and CAS high
80
TBO
70
TBO
mA
2.5
5
2.5
5
mA
65
TBO
55
TBO
mA
55
TBO
45
TBO
mA
tc = minimum cycle,
1003
Average refresh current
I
1004
Average page-mode current
RAS cycling,
CAS high
tc(P) = minimum cycle,
RAS low,
CAS cycling
.....
...
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VOH
High-level output voltage
10H = -5 mA
VOL
Low-level output voltage
10L = 4.2 mA
II
Input current (leakage)
VI=O V to 5.8 V, VOO=5 V
All other pins = 0 V to .5.8 V
TMS4464-15
MAX
MIN TVPt
2.4
TMS4464-20
MIN TVpt
MAX
2.4
UNIT
V
0.4
0.4
V
±10
±10
p,A
Output current (leakage)
1001
Average operating current
during read or write cycle
1002
Standby current
1003
Average refresh current
±10
VOO = 5 V,
CAS high
±10
p,A
E
2
"'C
CO
tc = minimum cycle
After 1 memory cycle,
RAS and CAS high
60
TBO
50
TBO
mA
2.5
5
2.5
5
mA
(1)
Va = 0 V to 5.5 V,
10
o
c.
c::
>-
40
TBO
30
TBO
mA
C
CAS cycling
t All typical values are at TA
=
25°C and nominal supply voltages.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-111
TMS4464
65,536·WORD BY 4·BIT DYNAMIC RAM
1 MHz
capacitance over recommended supply voltage range and operating free·air temperature range. f
TMS4164
Typt
MAX
PARAMETER
UNIT
Ci(A)
Input capacitance, address inputs
4
7
pF
Ci(RC)
Input capacitance strobe inputs
8
10
pF
Ci(W)
Input capacitance, write enable input
8
10
pF
Cilo
Output capacitance
8
10
pF
t All typical values are at TA
=
25 DC and nominal supply voltages,
~witching characteristics over recommended supply voltage range and operating free-air temperature range
PARAMETER
c
-<::::I
ta(C)
Access time from CAS
ta(R)
Access time from RAS
Q)
3
ta(G)+
o·
::xJ
»
tdis(CH)
Access time after
Glow
Output disable time
after CAS high
Output disable time
s:
tdis(G)
after Ghigh
TEST CONDITIONS
= 100 pF,
= 2 Series 74 TTL gates
tRLCL = MAX, CL = 100 pF,
Load = 2 Series 74 TTL gates
CL = 100 pF,
Load = 2 Series 74 TTL gates
CL = 100 pF,
Load = 2 Series 74 TTL gates
CL = 100 pF,
Load = 2 Series 74 TTL gates
ALT.
SYMBOL
TMS4464-10
MIN
tRLCL ~ MAX, CL
Load
MAX
TMS4464-12
MIN
MAX
UNIT
tCAC
60
70
ns
tRAC
100
120
ns
tGAC
30
35
ns
tOFF
0
30
0
30
ns
tGOFF
0
30
0
30
ns
Q)
::::I
c..
switching characteristics over recommended supply voltage range and operating free-air temperature range
s:
CD
PARAMETER
3
o...
-<
ta(C)
'J)
ta(R)
c:
'C
'C
o...
ta(G)+
cCD
tdis(CH)
O·
tdis(G)
...
c::
CD
(f)
TEST CONDITIONS
ALT.
SYMBOL
MIN
MAX
TMS4464-20
MIN
MAX
UNIT
Access time from CAS
tRLCL ~ MAX, CL = 100 pF,
Load = 2 Series 74 TTL gates
tCAC
85
120
ns
Access time from RAS
tRLCL = MAX, CL = 100 pF,
Load := 2 Series 74 TTL gates
tRAC
150
200
ns
Access time after
CL
Glow
Output disable time
Load
tGAC
45
55
ns
=
100 pF,
=
2 Series 74 TTL gates
after CAS high
CL = 100 pF,
Load = 2 Series 74 TTL gates
Output disable time
CL
after Ghigh
Load
=
tOFF
0
30
0
35
ns
tGOFF
0
30
0
35
ns
100 pF,
=
2 Series 74 TTL gates
t talC) and ta(R) must be satisfied to guarantee ta(G)'
4-112
TMS4464-15
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
1MS4464
65,536·WORD BY 4·B11 DYNAMIC RAM
timing requirements over recommended supply voltage range and operating free-air temperature range
ALT.
. PARAMETER
tc(P)
tc(PM)
Page mode cycle time
Page-mode cycle time (read-modify-write cycle)
TMS4464-10
TMS4464-12
SYMBOL
MIN
MIN
tpc
tpCM
110
180
MAX
MAX
UNIT
130
210
ns
ns
tc(rd)
Read cycle time t
tRC
200
230
ns
tc(W)
Write cycle time
twc
200
230
ns
tc(rdW)
Read-write/read-modify-write cycle time
270
310
ns
tw(CH)P
tw(CH)
Pulse duration, CAS high (page mode)
tRWC
tcp
40
50
ns
tCPN
40
60
50
70
tw(CL)
Pulse duration, CAS high (non-page mode)
Pulse duration, CAS low:!:
tw!RH)
Pulse duration, RAS high (precharge time)
tRP
90
tWIRL)
Pulse duration, RAS low§
tRAS
100
tw(W)
Write pulse duration
twp
35
tt
Transition times (rise and fall) for RAS and CAS
Column address setup time
tASC
3
0
tsu(RA)
Row address setup time
tASR
0
0
ns
tsu(D)
Data setup time
tDS
0
0
ns
tsu(rd)
Read command setup time
tRCS
0
0
ns
tsu(CA)
tCAS
tT
Early write command setup
10,000
10,000
100
10,000
120
ns
10,000
40
50
3
0
ns
ns
ns
ns
50
ns
ns
CI)
Q)
(.)
twcs
0
0
ns
':;:
tCWL
30
40
ns
Write command setup time before RAS high
C
tRWL
30
40
ns
th(CLCA)
Column address hold time after CAS low
tCAH
20
20
ns
th(RA)
Row address hold time
tRAH
15
15
ns
th(RLCA)
th(CLD)
Column address hold time after RAS low
tsu(WCU
tsu(WCH)
time before CAS low
Write command setup time before CAS high
tsu(WRH)
th(RLD)
Data hold time after CAS low
Data hold time after RAS low
th(WLDI
Data hold time after W low
th(CHrd)
Read command hold time after CAS high
th(RHrd)
Read command hold time after
Q)
60
70
ns
tDHR
30
70
35
85
ns
ns
tAR
tDH
...
"-
o
c.
C.
:::l
en
>
o"-
tDH
30
35
ns
tRCH
0
0
ns
high
tRRH
10
10
ns
th(CLW)
th(RLW)
Write command hold time after CAS low
Write command hold time after RAS low
tWCH
tWCR
30
70
35
85
ns
ns
tRLCHR
Delay time, RAS low to CAS high'
tCHR
20
25
ns
tRLCH
Delay time,
tCSH
100
120
ns
tCHRL
Delay time, CAS high to RAS low
tCRP
0
0
ns
tCLRH
Delay time, CAS low to RAS high
tRSH
60
70
ns
tCLWL
Delay time, CAS low to W low
(read-modify-write cycle only)#
tCWD
95
105
ns'
tCLRL
Delay time, CAS low to RAS low'
tCSR
20
25
ns
tRCD
25
tRWD
135
tGDD
30
RAS
low to
CAS
RAS
high
E
Q)
:2:
"C
s:::
ca
:2:
ns
4
ms
t All cycle times assume tt ~ 5 ns.
~ In a read-modify-write cycle, tCLWL and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAS low time
(tw(CL))'
§ In a read-modify-write cycle, tRLWL and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAs low time
~RL))'
, CAS-before-l'fAS refresh option only.
/I G must disable the output buffers prior to applying data to the device.
14
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-113
TMS4464
65,536-WORD BY 4-BIT DYNAMIC RAM
timing requirements over recommended supply voltage range and operating free-air temperature range
,
ALT.
PARAMETER
tc(PJ
tc(PM)
c
-<
SYMBOL
Page mode cycle time
Page-mode cycle time (read-modify-write cycle)
tpc
tpCM
tc(rd)
Read cycle time T
tRC
tc(W)
Write cycle time .
twc
tc(rdW)
Read-write/read-modify-write cycle time
tw(CH)P
tw(CH)
Pulse duration; CAS high (page mode)
tRWC
tcp
tw(CL)
Pulse duration, CAS high (non-page mode)
Pulse duration, CAS low +
tw(RH)
Pulse duration,
tw(RL)
Pulse duration, RAS low §
twlW)
tt
tsu(CA)
Write pulse duration
Transition times (rise and fall) for RAS and CAS
Column address setup time
tASC
tASR
RAS
high (precharge time)
tpCN
tCAS
tRP
tRAS
twp
tsu(RA)
Row address setup time
tsu(D)
Data setup time'
tsu(rd)
Read command setup time
tT
tsu(WCL)
ns
ns
10,000
ns
ns
ns
10,000
ns
ns
50
ns
ns
60
60
45
20
125
55
135
55
ns
a
a
ns
15
55
135
35
200
ns
tRWL
::0
th(CLCA)
Column address hold time after
th(RA)
Row address hold time
th(RLCA)
th(CLD)
Column address hold time after RAS low
Dl
:l
C.
ns
45
45
25
15
90
45
110
45
tCWL
~
ns
ns
high
»
ns
ns
twcs
Write command setup time before RAS high
low
UNIT
0
tsu(WCH)
tCAH
tRAH
tAR
tDH
a
MAX
0
tsu(WRH)
CAS
210
315
330
330
435
80
80
120
120
200
55
3
MIN
tRCS
o·
CAS
155
240
260
260
345
60
60
85 10,000
100
150 10,000
45
3
50
0
0
0
tDS
time before CAS low
Write command setup time before
3
TMS4464-20
a
a
a
a
Early write command setup
:l
Dl
TMS4464-15
MIN
MAX
ns
ns
ns
ns
ns
ns
ns
th(RLD)
Data hold time after CAS low
Data hold time after RAS low
~
th(WLD)
Data hold time after W low
th(CHrd)
Read command hold time after
high
tRCH
3
o..,
th(RHrd)
Read command hold time after RAS high
tRRH
th(CLW)
th(RLW)
Write command hold time after CAS low
Write command hold time after RAS low
tWCH
tWCR
tRLCHR
Delay time, RAS low to CAS high'
tCHR
tRLCH
Delay time, RAS low to CAS high
tCSH
10
45
110
30
150
tCHRL
Delay time, CAS high to RAS low
tCRP
a
a
ns
tCLRH
Delay time, CAS low to RAS high
tRSH
85
120
ns
tCLWL
Delay time, CAS low to W lo\:,\,
(read-modify-write cycle only)#
tCWD
120
160
ns
tCLRL
Delay time, CAS low to RAS low'
tCSR
30
35
ns
tRCD
25
tRWD
185
tGDD
30
~
-<
en
r:::
"C
"C
o
~
Delay time, RAS low to
tRLCL
CAS
tDHR
tDH
CAS
(maximum value specified only
(read-modify-write cycle only)#
Delay time, G high before
tGHD
trf
ns
ns
ns
ns
ns
low
to guarantee access time)
Delay time, RAS low to W low
tRLWL
ns
ns
data applied at DQ
Refresh time interval
tREF
65
30
80
240
ns
35
4
ns
ns
4
ms
t All cycle times assume tt = 5 ns.
t In a read-modify-write cycle, tClWl and tsu(WCH) must be observed. Depending on the user's transition times, this may require additional CAS low time
(tw(Cl))'
§ In a read-modify-write cycle, tRlWl and tsu(WRH) must be observed. Depending on the user's transition times, this may require additional RAS low time
!!xtJ.Rl))·
_
, CAS-before-RAS refresh option only.
# G must disable the output buffers prior to applying data to the device.
11
. 4-114
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4464
65,536·WORD BY 4·BIT DYNAMIC RAM
read cycle timing
"'1~1---------tC(rd)--------.l·l
I I~
:::1
~
.1
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I-- tt
t
I
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~~--
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>-
C
TEXAS
INsrRuMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-115
TMS4464
65,536·WORD BY 4,BIT DYNAMIC RAM
early write cycle timing
Q)
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Q.
s:
CD
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11
4-116
. TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4464
65,536-WORD BY 4-BIT DYNAMIC RAM
write cycle timing
-
AO-A7
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C
TEXAS
INSfRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
4-117
TMS4464
65,536·WORD BY 4·BIT DYNAMIC RAM
read-write/read-modify-write cycle timing
c
<~
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3
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I
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t
en
4-118
TEXAS
INSIRUMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
RAS
VIH
VIL
----{!
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III
CC
CD
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A write cycle or read-modify-write cycle can be intermixed with read cycles as long as the write and read modify-write timing specifications are not violated.
.....
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Dynamic RAM and Memory Support Devices
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-"
N
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Dynamic RAM and Memory Support Devices
:s:~
TMS4464
65,536·WORD BY 4·BIT DYNAMIC RAM
RAS·only refresh cycle timing
automatic (CAS before RAS) refresh cycle timing
1
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1E
4-122
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
~
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w
t For devices with CAS-before-RAS refresh option only.
t Row address is required only for devices without CAS-before-RAS refresh option. Row address is "don't care" for devices with CAS-before-RAS option.
Dynamic RAM and Memory Support Devices
=~
>~
s::
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til
4-124
TMS4500A
DYNAMIC RAM CDrHROLLER
MEMORY SUPPORT
LSI
JANUARY 1982 - REVISED APRIL 1983
TMS4500A ... Nl PACKAGE
•
Controls Operation of 8K/16K/32K/64K
Dynamic RAMs
•
Creates Static RAM Appearance
•
One Package Contains Address Multiplexer,
Refresh Control, and Timing Control
•
Directly Addresses and Drives Up to 256K
Bytes of Memory Without External Drivers
•
•
•
•
•
•
•
(TOP VIEW)
ClK
RDY
RENl
cs
ALE
RASO
Operates from Microprocessor Clock
- No Crystals, Delay Lines, or RC Networks
- Eliminates Arbitration Delays
Versatile
Strap-Selected Refresh Rate
Synchronous, Predictable Refresh
Selection of Distributed, Transparent, and
Cycle-Steal Refresh Modes
Interfaces Easily to Popular Microprocessors
REFREQ
TWST
FSO
FSl
RA7
RASl
CA7
ACR
MA7
ACW
MA6
CA6
CAS
RAO
Refresh May Be Internally or Externally
Initiated
vcc
..
RA6
CAO
RA5
MAO
CA5
MAl
MA5
CAl
RAl
RA4
RA2
CA2
MA2
......
GND
Strap-Selected Wait State Generation for
Microprocessor/Memory Speed Matching
o
0.
0.
~
Ability to Synchronize or Interleave Controller with the Microprocessor System
(hicluding Multiple Controllers)
(J)
...o>
E
Q)
Three-State Outputs Allow Multiport
Memory Configuration
2
Performance Ranges of 150 ns/200 nsf
250 ns
"C
C
CO
description
The TMS4500A is a monolithic DRAM system controller designed to provide address multiplexing. timing. control
and refresh/access arbitration functions to simplify the interface of dynamic RAMs to microprocessor systems.
The controller contains a 16-bit multiplexer that generates the address lines for the memory device from the 16 system
address bits and provides the strobe signals required by the memory to decode the address. An 8-bit refresh counter
generates the 256-row addresses required for refresh.
:E
C
A refresh timer is provided that generates the necessary timing to refresh the dynamic memories and assure data
retention.
The TMS4500A also contains refresh/access arbitration circuitry to resolve conflicts between memory access requests
and memory refresh cycles. The TMS4500A is offered in a 40-pin. 600-mil dual-in-line plastic package and is guaranteed
for operation from 0 DC to 70 DC.
Copyright © 1983 by Texas Instruments Incorporated
4
TEXAS INSTRUMENTS
INCORPORATED
4-125
TMS4500A
DYNAMIC RAM CONTROLLER
BLOCK DIAGRAM
RAO·RA7 1..----'1
MUlTIPLEXER
'\11-_ _-.1 MAO·MA7
CAO·CA7 L----.fJ
..
ALE _ _ _ _ _ _•
c
-<:1
C S - -............
RASO
REN1--......~
C)
3
ci"
ACR ------------------~~
ACW -------~------------~~
:D
l>
~
'\1~---~
RASl
'\1~---~
CAS
TIMING
AND
CONTROL
REF REO -OIIt---I~'-~
C)
:1
C.
~
TWST
~
3
FSO
FSl
c..,
~---~ ROY
-<
rJJ
r:::
ClK
'C
'C
C
.....,
c
pin descriptions
<
RAO· RA7
Input
Row Address - These address inputs are used'to generate the row address for
the multiplexer.
CAO-CA7
Input
Column Address - These address inputs are used to generate the column address
for the multiplexer.
MAO· MA7
Output
Memory Address - These three-state outputs are designed to drive the addresses
of the dynamic RAM array.
ALE
Input
Address Latch Enable - This input is used to latch the 16 address inputs, CS and
R EN 1. This also initiates an access cycle if chip select is valid. The rising edge
(low level tO,high level) of ALE returns RAS to the high level.
(1)
n'
(1)
en
18'
4-126
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
pin descriptions (continued)
CS
Input
Chip Select - A low on this input enables an access cycle. The trailing edge of
ALE latches the chip select input.
REN1
INPUT
RAS Enable 1 - This input is used to select one of two banks of RAM via the
RASO and RAS1 outputs when chip select is present. When it is low, RASO is
selected; when it is high, RAS1 is selected.
Input
Access Control, Read; Access Control, Write - A low on either of these inputs
causes the column address to appear on MAO - MA7 and the column address
strobe. The rising edge of ACR or ACW terminates the cycle by ending RAS and
CAS strobes. When ACR and ACW are both low, MAO - MA7, RASa, RAS1, and
CAS go into a high-impedance (floating) state.
Input
System Clock - This input provides the master timing to generate refresh cycle
timings and refresh rate. Refres.h rate is determined by the TWST, FS1, FSO
inputs.
Input/Output
Refresh Request - (This input should be driven by an open-collector output.)
On input, a low·going edge initiates a refresh cycle and will cause the internal
refresh timer to be reset on the next falling edge of the ClK. As an output, a
low-going edge signals an internal refresh request and that the refresh timer will
be reset on the next low-going edge of ClK. REF REO will remain low until the
refresh cycle is in progress and the current refresh address is present on MAO-MA7 .
(Note: REFREO contains an internal pull-up resistor with a nominal resistance
of 10 kilohms.)
ClK
(I)
Q)
U
'S;
Q)
C
......
o
c.
C.
RASO, RAS1
Output
Row Address Strobe - These three-state outputs are used to latch the row address
into the bank of DRAMs selected by REN1. On refresh both signals are driven.
CAS
Output
Column Address Strobe - This three-state output is used to latch the column
address into the DRAM array.
ROY
Output
Ready - This totem-pole output synchronizes memories that are too slow to
guarantee microprocessor access time requirements. This output is also used to
inhibit access cycles during refresh when in cycle-steal mode.
TWST
FSO, FS1
Input
Inputs
TiminglWait Strap - A high on this input indicates a wait state should be added
to each memory cycle. In addition it is used in conjunction with FSO and FS1 to
determine refresh rate and timing.
Frequency Select 0; Frequency Select 1 - These are strap inputs to select Mode
and Frequency of operation as shown in Table 1.
::J
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2
"C
C
CO
2
«
a:
u
'E
CO
c
>
C
14
TEXAS INSTRUMENTS
INCORPORATED
4-127
TMS4500A
DYNAMIC RAM CONTROLLER
TABLE 1 - STRAP CONFIGURATION
WAIT
STATES
STRAP INPUT MODES
CLOCK.
FOR
MINIMUM
MEMORY
REFRESH
TWST
FS1
FSO
ACCESS
RATE
l
l
It
0
EXTERNAL
-
l
l
H
0
elK -;. 31
l
H
l
0
l
H
H
H
l
l
H
l
H
H
H
H
ClK FREO.
CYCLES
REFRESH
FOR EACH
FREO. (kHz)
REFRESH
REFREO
64·95 t
4
1.984
elK -;. 46
2.944
64· 85*
3
0
elK -;. 61
3.904
1
elK -;. 46
2.944
64·82§
64·85 t
3
H
1
elK
61
3.904
64·80*
4
l
1
4.864
64· 77*
4
H
1
elK.:- 76
elK -;. 91
5.824
64· 88~
4
~.
(MHz) .
3
4
t This strap configuration resets the Refresh Time; circuitry.
t Upper figure in refresh frequency is the frequency that is produced if the minimum eLK frequency of the next select state is used.
§ Refresh frequency if eLK frequency is 5 MHz.
o
~ Refresh frequency if eLK frequency is 8 MHz.
'<
::
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3
functional description
cS"
TMS4500A consists of six basic blocks; address and select latches, refresh rate generator, refresh counter, the multiplexer, the arbiter, and the timing and control block.
:::JJ
»
s:
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address and select latches
::
The address and select latches allow the D RAM controller to be used in systems that multiplex address and data on
the same lines without external latches. The row address latches are transparent, meaning that while ALE is high, the
output at MAO· MA7 follows the inputs RAO· RA7.
c.
s:
~
3
o..,
refresh rate generator
'<
The refresh rate generator is a counter that indicates to the arbiter that it is time for a refresh cycle. The counter
divides the clock frequency according to the configuration straps as shown in Table 1. The counter is reset when a
refresh cycle is requested or when TWST, FS1 and FSO are low. The configuration straps allow the matching of
memories to the system access time.
C/J
C
"C
"C
o..,
Upon Power·Up it is necessary to provide a reset signal by driving all three straps to the controller low to initialize
internal counters. A system's low·active, power·on reset (~) can be used to accomplish this by connecting it to
those straps that are desired high during operation. During this reset period, at least four clock cycles should occur.
P"+
refresh counter
The refresh counter contains the a"ddress of the row to be refreshed. The counter is decremented after each refresh
cycle. [A low·to·high transition on TWST sets the refresh counter to FF16 (25510).]
multiplexer
The multiplexer provides the DRAM array with row, column, and refresh addresses at the proper times. Its inputs are
the address latches and the refresh counter. The outputs provide up to 16 multiplexed addresses on eight lines.
18~
4-128
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
arbiter
The arbiter provides two operational cycles: access and refresh. The arbiter resolves conflicts between cycle requests
and cycles in execution, and schedules the inhibited cycle when used in cycle·steal mode.
timing and control block
The timing and control block executes the operational cycle at the request of the arbiter. It provides the DRAM array
with RAS and CAS signals. It provides the CPU with a ROY signal. It controls the multiplexer during all cycles. It
resets the refresh rate generator and decrements the refresh counter during refresh cycles.
absolute maximum ratings over operating ambient temperature range (unless otherwise noted) t
Supply voltage range, VCC (see
Input voltage range (any input)
Continuous power dissipation
Operating ambient temperature
Storage temperature range
..
Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.5 V to 7 V
(see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • -1.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . __ . _ _ _ 1_2 W
range
. . . . . . . . . . ___ . __ . . . . . . . . _ .. __ . _ . __ .. ____ . _. O°C to 70°C
________ .... __ . __ ... __ .. ___ . _ . . . . . _ . _ • __ . __ . _ _ -65°C to 150°C
recommended operating conditions
PARAMETER
MIN
4.5
Supply voltage, Vee
High-level input voltage, VIH
low-level input voltage, Vil
Operating ambient t temperature, TA
NOM
5
2.4
-1 +
MAX
5.5
6
0.8
70
0
UNIT
V
C.
::::J
°e
t Stres&es beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
t The algebraic convention, vyhere the more negative limit is designated as minimum, is used in this data sheet for logic voltage levels only.
NOTE 1: Voltage values are with respect to the ground terminal.
electrical characteristics over recommended operating ambient temperature range (unless otherwise noted)
V OH
~OL
IIH
III
IOZ
lee
ei
eo
PARAMETER
MAO-MA7, ROY
High-level
RASO,RAS1,eAS
output voltage
REFREQ
low-level output voltage
REFREQ
High-level
All others
input current
low-level
REFREQ
input current
All others
Off-state output current
Operating supply current
Input capacitance
Output capacitance
t All typical values are at VCC
=
5 V, TA
=
TEST CONDITIONS
IOH = -.1 mA
Vee = 4.5 V
IOH = 100 ",A
IOl = 4 mA
Vee = 4.5 V
Vee = 4.5 V
VI = 5.5 V
VI = OV
V O =Ot04.5V
TA = oDe
Vee = 5.5 V
VI = OV,
Vo = 0 V,
f = 1 MHz
f = 1 MHz
MIN
2.4
2.7
2.4
Typt
MAX
UNIT
V
0.4
100
10
-1.25
-10
±50
100
140
5
6
V
",A
mA
p.A
..c.
+oJ
o
V
V
en
~
o
E
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Q)
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C
CO
:E
cd:
a:
to)
"e
CO
c
>
o
",A
mA
pF
pF
25 DC except where otherwise noted.
184
TEXAS (NSTRUMENTS
INCORPORATED
4-129
TMS4500A
DYNAMIC RAM CONTROLLER
timing requirements over recommended supply voltage range and operating ambient temperature range
TMS4500A-15
PARAMETER
MIN
100
tw(CH)
ClK high pulse width
20
20
20
tw(Cl)
ClK low pulse width
35
35
35
tt
Transition time, all inputs
starting low (see Note 1)
starting low (see Note 1)
Time delay, ClK low to ALE
tCl-AEH
tw(AEH)
starting high (see Note 2)
Pulse width ALE high
Time delay, address, REN1, CS
tAV-AEl
valid to ALE low
Time delay, ALE low to address
tAEl-AX
Dl
3
tACH-Cl
:Jl
tACl-CH
s:
tRQL-Cl
Dl
tw(ROl)
s:
3
o
~
'<
CJ)
c:
'C
'C
o
...
~
(see Notes 3.4,5, and 6)
Time delay, ACX high to ClK low
(see Notes 3 and 7)
Time delay, ACX low to ClK
l>
CD
not valid
Time delay, ALE low to ACX low
tAEl-ACl
starting high (to remove ROY)
Time delay, REFREO low to ClK
starting low (see Note 8)
Pulse width, REFREO low
100
50
UNIT
50
10
10
15
10
10
15
15
20
20
50
60
60
5
10
15
10
10
10
th(RA) +30
MAX
140
50
Time delay, ClK low to ALE
tCl-AEl
::J
C.
TMS4500A-25
MIN
MAX
ClK cycle time
Time delay, ALE low to ClK
n'
TMS4500A-20
MIN
tc(C)
tAEl-Cl
C
'<
;:,
MAX
th(RA)+40
ns
th(RA)+ 50
-
20
20
20
30
30
30
20
20
20
20
20
20
NOTES: 1. Coincidence of the trailing edge of ClK and the trailing edge of ALE should be avoided, as the refresh/access occurs on the trailing ClK edge.
A trailing edge of ClK should occur during the interval from ACX high to ALE low.
2. If ALE rises before
and a refresh request is present, the falling edge of ClK after tCl-AEH will output the refresh address to MAO-MA7
and initiate a refresh cycle.
3. These specifications relate to system timing and do not directly reflect device performance
4. On 'the access grant cycle following refresh, the occurrence of CAS low depends on the relative occurrence of ALE low to ACX low. If ill
occurs prior to or coincident with ALE then CAS is timed from the ClK high transition that causes RAS low. If i l l occurs 20 ns or more after
ALE then CAS is timed from the ClK low transition following the ClK high transition causing RAS low.
5. For maximum speed access (internal delays on both access and access grant cycles), ill should occur prior to or coincident with ALE.
6. th(RA) is the dynamic memory row address hold time. ACX should follow ALE by tAEl-CEl in systems where the required th(RA) is greater than
tREl-MAX minimum .
7. Minimum of 20 ns is specified to ensure arbitration will occur on falling elK edge. tACH-Cl also affects precharge time such that the minimum
tACH-Cl should be equal or greater than: tw(RH) - tw(Cl) + 30 ns (for cycle where ACX high occurs prior to ALE high) where tw(RH) is the
DRAM RAS precharge time.
8. This parameter is necessary only if refresh arbitration is to occur on this low-going ClK edge (in systems where refresh is synchronized to external
events).
m
184
4-130
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
switching chara~teristics over recommended supply voltage range and operating ambient temperature range
(see Figure 1)
TEST
PARAMETER
CONDITIONS
TMS4500A-15 TMS4500A-20 TMS4500A-25
MIN
MAX
Time delay, ALE low to
tAEl-REl
tt(REl)
RAS starting low
RAS fall time
Time delay, row address valid
tRAV-MAV
Cl = 160pF
to memory address valid
Time delay, ALE high to
tAEH-MAV
valid memory address
Time delay, ALE to ROY start.ing
tAEl-RYl
low (TWST = 1 or refresh in progress)
Cl = 40 pF
Time delay, ALE low to CAS
tAEl-CEl
60
starting low
tAEH-REH
starting high
Address transition time
tACl-MAX
Row address hold from ACX low
ttlCELl
valid to CAS starting low
CAS fall time
ttICEH)
starting high
CAS rise time
5
Cl = 160 pF
ACX high
low) Isee Note 9)
supported by REFREO internal
address valid
starting high 13 cycle refresh)
Cl = 160pF
starting high 14 cycle refresh)
5
RAS starting high
Time delay, refresh address hold
tCH-MAX
90
100
30
250
40
20
25
20
rJ)
Q)
(.)
65
130
'>
25
85
40
50
15
20
25
30
10
40
15
C
165
30
.....
...
o
a.
a.
ns
::::J
en
...>
50
45
35
o
25
20
E
Q)
35
45
60
25
30
30
~
"C
c:
30
35
45
~
75
100
125
a:
80
'ECO
50
5
valid till refresh RAS low
Time delay, ClK high to refresh
tCH-RRH
200
«
(.)
10
refresh RAS starting low
Time delay, ClK high to REFREO
tCH-RFH
75
CO
internal starting low
Time delay, ClK low to REF REO
tCl-RFH
35
Cl = 40 pF
Time delay, refresh address
tMAV-RRl
25
15
Cl = 40 pF
Time delay, ClK high till
tCH-RRl
20
30
Time delay, ClK low till refresh
tCl-MAV
90
15
Cl =320 pF
Time delay, ClK high till REFREO
tCH-RFl
70
0
Time delay, REFREO external till
tRFl-RFl
55
0
Cl = 160 pF
starting high
AcX
60
0
RAS rise time
high lafter
50
UNIT
Q)
starting low
Time delay, ClK high to ROY starting
tCH-RYH
40
25
50
Column address hold from
tACH-MAX
25
20
Cl = 320 pF
Time delay, ACX high to CAS
tACH-CEH
50
20
15
Time delay, ACX to RAS
ttIREH)
40
15
Time delay, ACX low to CAS'
tACH-REH
MAX
15
25
Time delay, memory address
tACl-CEl
MIN
Cl = 160pF
ttIMAV)
tMAV-CEl
MAX
30
150
Time delay, ALE high to RAS
MIN
15
after ClK high.
15
60
5
20
c:
>
5
45
55
75
45
55
75
35
10
20
45
10
C
60
25
NOTE 9: ROY returns high on the rising edge of ClK. If TWST = 0, then on an access grant cycle ROY goes high on the same edge that causes access RAS
low. If TWST = 1, then ROY goes to the high level on the first rising ClK edge after ACx goes low on access cycles and on the next rising edge
after the edge that causes access RAS low on access grant cycles (assuming ACX low).
34
TEXAS INSTRUMENTS
INCORPORATED
4-131
TMS4500A
DYNAMIC RAM CONTROLLER
switching characteristics over recommended supply voltage range and operating ambient temperature range
(see Figure 1) (continued)
.
TEST
PARAMETER
TMS4500A-15 TMS4500A-20 TMS4500A-25
CONDITIONS
MIN
MAX
Time delay, ClK high till access
tCH-REl
60
RAS starting low
Time delay, ClK low to access
tCl-CEl
tCl-MAX
tw(ACl)
tREl-MAX
tt(RYL)
::
Q)
3
cr
»
:lJ
s
Q)
::
Cl
CAS starting low (see Note 4)
=
ACX low width
Row address hold from RAS low
25
25
30
30
40
35
ROY fall time
Cl
=
40 pF
Output disable time (3-state outputs)
45
tAEH-MAX
ten
Column address hold from ALE high
Output enable time (3-state outputs)
10
0
Cl
=
160 pF
15
20
25
35
55
65
15
0
0
CAS after refresh
Time delay, ClK high to access
=
=
Cl
tACl-RYH
tCl-ACl
ClK low to ACX starting low
Cl = 40 pF
Cl
40 pF
125
75
165
80
20
0
105
0
140
CAS starting low (see Note 4)
ACX low to ClK starting low
ACX low to RDY starting high
tACl-Cl
10
20
100
25
0
180
235
45
50
0
ns
0
35
40
40 pF
UNIT
185
40
tdis
tCH-CEl
140
30
RDY rise time
MAX
95
25
tt(RYH)
tCAV-CEl
MIN
70
125
160 pF
MAX
Row address hold after ClK low
Column address setup to
C
'<
MIN
60
0
m
NOT,E 4: On the access grant cycle following refresh, the occurrence of CAS low depends on the relative occurrence of ALE low to
low. If ACX occurs
prior to or coincident with ALE then CAS is timed from the ClK high transition that causes RAS low. If'ACX occurs 20 ns or more after ALE then
CAS is timed from the ClK low transition following the ClK high transition causing RAS low.
Co
S
CD
3
PARAMETER MEASUREMENT INFORMATION
...o
'<
(J)
C
"C
"C
...
o
r+
FIGURE 1 - lOAD CIRCUIT
184
4-132
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
access cycle timing
AOW,RENl
COL,CS
MAO-MA7
...
~
o
0.
0.
:::l
RDY
CJ)
>o
~
E
Q)
~
refresh request timing
"'C
t:
co
~
\
/
\
If
'CH'' +--,
\
REF REO
(EXTERNAL)
REFREQ
(INTERNAL)
\
«a:
(.)
'E
co
t:
>-
C
l4
TEXAS (NSTRUMENTS
INCORPORATED
4-133
TMS4500A
DYNAMIC RAM CONTROLLER
ready timing (ACX during ClK high) (see notes 10 thru 13)
ClK
~
ALE
~---_----I
'\
~
!
r--tACl-Cl--l
'AEL_~
"\ 1 - - - - -t
ROY
C
'<
::::J
DJ
3
n'
'ACL-RYH
ROY starting high is timed from ACX low (tACl-RYHI for the condition ACX going low while ClK high.
NOTES: 10_
11.
12_
13.'
For ~ high transition (during normal access) to be timed from the rising edge of ClK. ACX must occur tCl-ACl after the falling edge of ClK.
For ACX prior to the falling edge of ClK by tACl-Cl' the ROY high transition will be tACl-RYH'
tACl-Cl is a limiting parameter for control of ROY to be dependent upon ACX low.
Ouring the interval for tACl-Cl < MINIMUM to tCl-ACl > MINIMUM. the control of ROY may vary between the rising clock edge or falling
edge of ACX.
::XJ
:t>
s:
ready timing (ACX during ClK low) (see notes 10 thru 13)
DJ
::::J
C.
s:
ClK
ctI
3
...
'<
o
ALE
00
C
"C
"C
......
o
~
\I
\
tCl-ACl
I
ACX
ROY
r- '1
\
"
r
I
I
I
tCH-RYH""1
r-
Jr
ROY starting high is timed from ClK high (tCH-RYHI for the condition ACX going low while ClK low.
NOTES: 10_
11 _
12.
13_
For ROY high transition (during normal access) to be timed from the riSing edge of ClK. ACX must occur tCl-ACl after the falling edge of ClK.
For ACX prior to the falling edge of ClK by tACl-Cl. the ROY high transition will be tACl-RYHtACl-Cl is a limiting parameter for control of ROY to be dependent upon ACX low_
During t~erval for tACi..-Cl < MINIMUM to tCl-ACl > MINIMUM. the control of ROY may vary between the rising clock edge or falling
edge of ACX_
184
4-134
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
output tristate timing
OUTPUTS
refresh cycle timing
(three cycle)
\
;(I)
(1)
(,)
'S;
(1)
c
......
0
C.
C.
:l
'CAV-CEL
en
...>
0
E
(1).
~
refresh cycle timing
(four cycle)
't:J
C
CO
~
«
a:
(,)
'ECO
c
>
C
~lMAVARl~
t On the access grant cycle following refresh, the occurrence of CAS low depends on the relative occurrence of ALE low to ACX low. If ACX occurs prior
to or coincident with ALE then CAS and address mUltiplexing are timed from the ClK high transition with tREl-MAX delay from RAs low to address not
valid. If ACX occurs 20 ns or more after ALE, then CAS and address multiplexing are timed from the ClK low transition.
84
TEXAS INSTRUMENTS
INCORPORATED
4-135
TMS4500A
DYNAMIC RAM CONTROLLER
typical access/refresh/access cycle
(three cycle, TWST = 0)
z
--- --- -
:z
:J
....J
o
U
N
M
Ul
Ul
W
U
u
«
C
'<
:::l
DJ
3
c:r
::0
»
S
DJ
:::l
Co
S
IZ
«
e::
Ul
Ul
w
U
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CD
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...
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u.
3
o
N
(!)
N
~
w-
e::
~
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Ul
Ul
W
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CD
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u
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W
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«
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I~
x
«
:z
I~
15
II
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e::
184
4-136
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
typical access/refresh/access cycle
(four cycle, TWST = 0)
.,.
-- -- -
z
~
--- ---- --- --
:J
...J
0
- - --- -
()
--- ---- --- --
C/)
Q)
(J
z
"S
a:
C
I-
«
Q)
Ul
Ul
w
()
()
«
~
W
a:
~
C/'J
...0>
~
a:
- - --- ~
...0
+oJ
C.
C.
- - --- -
IUl
u..
w
- - ---- - - --
- - --- -
(!)
E
Q)
I
(J)
w
0:
~
u..
w
0:
"C
C
ca
~
...J
Ul
(J)
- - --- -
w
()
()
«
0
C
()
-- -
--- -~
...J
()
w
...J
«
I~
><
«
~
I~
15
II
>-
0
0:
4
TEXAS INSTRUMENTS
INCORPORATED
4-137
TMS4500A
DYNAMIC RAM CONTROLLER
typical access/refresh/access cycle
(three cycle, TWST = 1)
z
~
::>
..J
o
U
..
M
0
'<
::::l
DJ
3
C;'
::u
l>
s:
DJ
::::l
C.
s:
_ _ _ _ _ _ _ _ _ _ __
--- - --- --
Z
~
::>
N
I-
--- -- -
z
<1:
a:
t?
(/)
(/)
w
w
--- --- N
~
--- --- -
LL
W
a:
~
--- - -- --
U
~
<1:
a:
0
M
u
u
I(/)
..J
i
3
...
-<
0
C/J
~
"C
"C
0
......
- - --- -
C
en
<
(;'
en
en
z
~
::>
..J
(/)
(/)
-- -- -
w
u
u
<1:
0
u
i
W
..J
<1:
I~
I~
II
>-
Cl
a:
184
4-138
TEXAS INSTRUMENTS
INCORPORATED
TMS4500A
DYNAMIC RAM CONTROLLER
typical access/refresh/access cycle
(fou r cycle, TWST = 1)
z
~
:;)
--l
o
U
fZ
~
a:
<:J
v
!':
en
en
w
u
u
~
ien
w
a:
u.
w
a:
M
!':
N
!':
---
---- -
.....
...
o
:I:
en
w
c.
c.
a:
i
u.
~
w
C/)
a:
...>-
o
E
Q)
~
v
--- ---
""C
-
--- ---
c:
-
co
~
z
--- ---
en
en
w
U
U
-
~
:;)
--l
---
0
-
C
i
--- --
---
-
---
--~
--l
u
w
--l
~
I~
x
~
~
I~
15
Ii
>0
a:
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
4-139
•
c
-<
:::l
Q)
3
c;'
~
»
s:
Q)
:::l
Co
s:
CD
3
...
-<
o
en
c
't:I
't:I
.......
o
c
CD
<
c;'
CD
en
4-140
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM Devices
Static RAM and Memory Support Devices
Applications Information . .
Logic Symbols
Mechanical Data
ATTENTION
These devices contain circuits to protect the inputs and outputs against damage
due to high static voltages or electrostatic fields; however, it is advised that
precautions be taken to avoid application of any voltage higher than maximumrated voltages to these high-impedance circuits.
Unused inputs must always be connected to an appropriate logic voltage level,
preferably either supply voltage or ground.
Additional information concerning the handling of ESD sensitive devices is
available from Texas Instruments in a document entitled "Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies. " Please contact
Texas Instruments
P.O. Box 401560
Dallas, Texas 75240
to obtain this brochure.
MOS
LSI
TM4164EC4
65,536 BY 4·B11 DYNAMIC RAM MODULE
NOVEMBER 1983
•
•
•
•
•
•
•
•
65,536
Single
X4
+ 5·V
Organization
22·Pin Single-In-Line Package (SIP)
Long Refresh Period ... 4 ms (256 cycles)
All Inputs, Outputs, Clocks Fully TTL
Compatible
3-State Outputs
Performance of Unmounted RAMs:
ACCESS
TIME
ROW
ADDRESS
(MAX)
120 ns
150 ns
200 ns
ACCESS
TIME
COLUMN
ADDRESS
(MAX)
75 ns
100 ns
135 ns
READ
OR
WRITE
CYCLE
(MIN)
230 ns
260 ns
330 ns
READ,
MODIFY,
WRITE
CYCLE
(MIN)
260 ns
285 ns
345 ns
Common CAS Control with Separate Data-In
and Data-Out Lines
Q)
"C
OPERATING
(TYP)
800 mW
700 mW
540 mW
STANDBY
(TYP)
70mW
70 mW
70 mW
Operating Free-Air Temperature ... 0 DC to
70 DC
•
rn
:;
Low Power Dissipation:
TM4164EC4-12
TM4164EC4-15
TM4164EC4-20
•
NC(1)
VDD (2)
D1 (3)
01 (4)
CAS (5)
A7 (6)
A5 (7)
A4 (8)
D2 (9)
02 (10)
W(11)
A1 (12)
A3 (13)
A6 (14)
03 (15)
D3 (16)
A2 (17)
AO(18)
RAS (19)
D4 (20)
04 (21)
VSS (22)
Utilizes Four 64K Dynamic RAMs in Plastic
Chip Carrier
TMS4164-12
TMS4164-15
TMS4164-20
•
•
22·PIN
SINGLE·IN·L1NE PACKAGE
(TOP VIEW)
Supply (10% Tolerance)
Upward Compatible with 256K X
In-Line Package
4. Single-
o
PIN NOMENCLATURE
AO-A7
Address Inputs
::?i
::?i
<
a:
CAS
Column Address Strobe
01-04
Data Inputs
NC
No Connection
01-04
Data Outputs
RAS
Row Address Strobe
CO
Voo
+ 5-V
>
Supply
VSS
Ground
W
Write Enable
u
·E
t:
C
description
The TM4164EC4 is a 256K, dynamic random-access memory module organized as 65,536 x 4 bits in a 22-pin singlein-line package comprising four TMS4164FPL, 65,536 x 1 bit dynamic RAM's in 18-lead plastic chip carriers mounted
on top of a substrate together with two 0.2JLF decoupling capacitors. Each TMS4164FPL is described in the TMS4164
data sheet and is fully electrically tested and processed according to TI's MIL-STD-883B (as ammended for commercial applications) flows prior to assembly. After assembly onto the substrate, a further set of electrical tests is performed. The TM4164EC4 is rated for operation from OOC to 70 o C.
upward compatibility
Future 256K x 4 memory modules in single-in-line packages will have identical pin functions and spacing, but will be
5,1 mm (0.2 inches) longer than the TM4164EC4; the length of the 256K x 4 (TM4256EE4) will be 61,0 ± 0,6 mm
MAX (2.400±0.025 inches MAX). To ensure compatibility between the two devices, enough clearance should be
allowed on the PC board design to accomodate the increased length of the TM4256EE4. Pin 1 of the TM4256EE4
module will be memory address A8.
34
PRODUCT PREVIEW
This document contains information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice. .
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFIC(SOX 225012 • DALLAS, TEXAS 75265
5-1
TM4164EC4
65,536 BY 4·BIT DYNAMIC RAM MODULE
op~ration
The TM4164EC4 operates as four TMS4164s connected as shown in the functional block diagram. Refer to the
TMS4164 data sheet for details of its operation.
specifications
For TMS4164 electrical specifications, refer to the TMS4164 data sheet.
single-in-Iine package and components
PC substrate: 0,79 mm (0.031 inch) minimum thickness
Bypass capacitors: Multilayer ceramic
Leads: Tin over brass
logic symbol t
AO
A1
C
<::::J
D)
3
c;'
(12)
(17)
Vi
AO
RAM 64K X 4
(18)
A2
(13)
A3
(8)
A4
(7)
A5
114)
A6
(6)
A7
(19)
RAS
(5)
CAS
(11 )
functional block diagram
Z30
Al
Z31
A2
A3
Z32
A4
A5
Z33
Z34
r-...
...
.....
A6
A7
Z35
Z36
Z37
Z38
Z39
Z40
RAS
3:
3:
(13)
(8)
(7)
(14)
(6)
8
(19)
..... ~
......
iii J!!L....
01
...
(3)
2008/2100
......
......
(9)
02
8
~~
......
03
....
(16)
&
8
~
23C22
40
01
02
03
04
(3)
(9)
(16)
(20)
40
Z41
41
23.210
A.220
CAS
W
0
voo
vss
I
T
-
(10)
Q2
RAM 64K Xl
AO-A7
RAS
CAS
w
(15)
r----
0
I=>
39-
T
RAM 64K Xl
AO-A7
..... ....l::::.. RAS
33
34353637 20015/2107
38 ~C20[ROwt
38 I- G23/[REFRESH ROW]
38 24 [PWR OWN)
39C21[COL)
39 G24
c
men
(4)
~ Ql
VSS
I
~
0
>A 65535
Co
RAS
CAS
W
0
r
-
31
32
c
RAM 64K X 1
AO-A7
voo
30
l>
(17)
CAS ~
..,
~
(18)
(12)
voo
vss
I
I
Q3
RAM 64K Xl
AO-A7
RAS
----.J::::. CAS
I 24EN
A\l
(4)
110)
(15)
(21)
......
Q1
04
W
0
voo
Q2
Q3
(201
voo
Q4
(2)
(22)
VSS
VSS
-
(21)
Q4
++ I
T
0.2
~F
0.2
~F
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions in IEEE and lEe. See explanation on page 10-1.
18
5-2
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TM4164EC4
65,536 BY 4·BIT DYNAMIC RAM MODULE
MECHANICAL DATA
22-pin single-In-line package
56.52 (2.2251
55,25 (2.1751
5,08 (0.2001-r-----i
MAX
I
I
0.305 (0.0121
0.203 (0.008)
II
PIN SPACING 2,54 (0.100) T.P.--I---I
(See Note 8)
0.51 (0.020)
--11--0.41 (0.016)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
en
CD
3
NOTE 8. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
"'C
o
~
~
TI single-in-line package nomenclature
TM
4164
E
c
4
T
QQ
(55,9 x 11.4 mm)
(2.2 x 0.45 inches)
-15
cib
Max
-12
-15
-20
L
«
a:
(,)
·e
C'a
c
>
C
Access
120 ns
150 ns
200 ns
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
5-3
c
-<
:::s
Q)
3
c:r
lJ
:t>
s:
s:
o
0C
CD
en
5-4
MOS
LSI
TM4164EL9
65,536 BY 9·BIT DYNAMIC RAM MODULE
NOVEMBER 19B3
30-PIN
SINGLE-IN·L1NE PACKAGE
(TOP VIEW)
•
65,536 X 9 Organization
•
Single
•
30-Pin Single-In-Line Package (SIP)
•
Utilizes Nine 64K Dynamic RAMs in Plastic
Chip Carrier
•
Long Refresh Period ... 4 ms (256 cycles)
•
All Inputs, Outputs, Clocks Fully TTL.
Compatible
•
3-State Outputs
•
Performance of Unmounted RAMs:
+ 5-V Supply (10% Tolerance)
TMS4164-12
TMS4164-15
TMS4164-20
•
ACCESS
TIME
ROW
ADDRESS
(MAX)
120 ns
150 ns
200 ns
ACCESS
TIME
COLUMN
ADDRESS
(MAX)
75 ns
100 ns
135 ns
READ
OR
WRITE
CYCLE
(MIN)
230 ns
260 ns
330 ns
READ,
MODIFY,
WRITE
CYCLE
(MIN)
260 ns
285 ns
345 ns
Common CAS Control for Eight Common
Data-In and Data-Out Lines
•
Separate CAS Control for One Separate Pair
of Data-In and Data-Out Lines
•
Low Power Dissipation:
TM4164EL9-12
TM4164EL9-1 5
TM4164EL9-20
•
VDD
CAS
D01
AO
A1
D02
A2
A3
Vss
D03
A4
A5
D04
A6
A7
D05
NC
NC
NC
D06
W
OPERATING
(TYP)
1800 mW
1575 mW
1215 mW
VSS
D07
NC
D08
09
RAS
CAS9
D9
VDD
STANDBY
(TYP)
157.5 mW
157.5 mW
157.5 mW
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11 )
(12)
(13)
(14)
(15)
(16)
(17)
(18)
(19)
(20)
(21)
(22)
(23)
(24)
(25)
(26)
(27)
(28)
(29)
(30)
Do
Do
Do
Do
Do
Do
Do
Do
D
en
Q)
"5
"'C
0
~
~
Operating Free-Air Temperature ... OOC to 70°C
C
description
The TM4164EL9 is a 576K, dynamic random-access
memory module organized as 65,536 x 9 bits [bit nine
(09, 09) is generally used for parity and is controlled
by CAS9] in a 30-pin single-in-line package comprising nine TMS4164FPL, 65,536 x 1 bit dynamic RAM's
in 18-lead plastic chip carriers mounted on top of a
substrate together with eight 0.2 p.F decoupling
capacitors. Each TMS4164FPL is described in the data
sheet and is fully electrically tested and processed
according to Tl's MIL-STD-8838 (as am mended for
commercial applications) flows prior to assembly.
After assembly onto the SIP, a further set of electrical
tests is performed. The TM4164EL9 is rated for operation from O°C to 70°C.
4
Address Inputs
Column Address Strobes
DQ1-DQ8
Data In/Data Out
D9
Data In
NC
Q9
No Connection
RAS
Row Address Strobe
+5-V Supply
Data Out
VDD
VSS
Ground
Vi
Write Enable
Copyright © 1983 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
PIN NOMENCLATURE
AO-A7
CAS, CAS9
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
5-5
1M4164EL9
65,536 BY 9-B11 DYNAMIC RAM MODULE
functional block diagram
(4)
AO
A1
A2
A3
A4
A5
A6
A7
(5)
(7)
(8)
(11)
(12)
(14)
(15)
(27)
(2)
(21)
M1
8
.... ~,....
.....
OQ1
(3)
8
.... ~
..r----
C
,....
'<
:l
~
OQ2
(6)
c:r
3
I
:JJ
8
~~
l>
s:
s:
0
t-
,....
(10)
OQ3
I
Q.
I:
Ci)
en
,-~
,....
RAS
-
CAS
Iii
0
1
M5
8
AO-A7
Voo
.1
v~~n
M2
.r---,
,....
OQ4
(13)
~
Iii
~
o
Voo
Vss
P.... I----J::::>
RAS
..r--r--
CAS
Q~
I
I
I
M61
AO-A7
RAS
CAS
-
W
OQ6 (20)
I
o
Qn
VOO VSS
M3
o
QQ
VOO VSS
.1
.1
j
M7j
8
~~
..r---
AO-A7
-RAS
CAS
r--
W
Q~
OQ7 (23)
o
VOO
VSS
I
I
I
I M4 I
8
~
CAS
t-
OQ5 (16)
AO-A7
Vi
-AO-A7
RAS
AO-A7
-RAS
CAS
W
Q~
o
VOO
VSS
I
I
I
M81
8
~~
.r---,
AO-A7
RAS
CAS
-W
D
r--
D~
VOO VSS
DOS ""
t
AO-A7
RAS
-CAS
-W
o
Ql
VOO
VSS
I
I
8
I
M91
~ -RAS
..r--- CAS
AO-A7
(28)
CAS9
09
..r--(29)
0
5-6
Q~ Q9
VOO VSS
(1)
VOO
(30)
VOO
(9)
VSS
(22)
VSS
-w
I
I
fC1···fC8
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TM4164EL9
65,536 BY 9-BIT DYNAMIC RAM MODULE
operation
The TM4164EL9 operates as nine TMS4164s connected as shown in the functional block diagram. Refer to the
TMS4164 data sheet for details of its operation.
specifications
For TMS4164 electrical specifications, refer to the TMS4164 data sheet.
single-in-line package and capacitors
PC substrate: 0,79 mm (0.031) minimum thickness
Bypass capacitors: Multilayer ceramic
Leads: Tin over brass
MECHANICAL OAT A
30-pin single-in-line package
I
I
I
76,84 (3.025)
75,57 (2.975)
5,08 (O.200)Ti
MAX
========
I dl
"'~~"'DDDDDDDDD
~",.m,
."
-II-
PIN SPACING 2,54 (0.100) T.P.----1---I
(See Note a)
0,305 (0.012)
0,203 (0.008)
0,51 (0.020)
0.41 (0.016)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTE a. Each pin centerline is located within 0,25 (0.010) of its.true longitudinal position.
TI single-in-line package nomenclature
TM
4164
L
T
-15
9
~
176,2 x 16,5 mm)
(3.0 x 0.65 inches)
,L
Gb
Max Access
-12
-15
-20
120 ns
150 ns
200 ns
Texas (nstruments reserves the right to make changes at any time in order to improve design and to s'upply the best product possible.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
5-7
5-8
MOS
LSI
TM4164FL8
65,536 BY 8-BIT DYNAMIC RAM MODULE
NOVEMBER 19B3
•
•
•
•
•
•
•
•
65,536 X 8 Organization
30-Pin Single-In-Line Package (SIP)
Long Refresh Period ... 4 ms (256 cycles)
DQ2 (6)
A2 (7)
A3 (8)
Vss (9)
DQ3 (10)
A4 (11 )
A5 (12)
DQ4 (13)
A6 (14)
A7 (15)
DQ5 (16)
NC (17)
NC (18)
NC (19)
DQ6 (20)
W (21)
VSS (22)
DQ7 (23)
NC (24)
DQ8 (25)
NC (26)
RAS (27)
NC (28)
NC (29)
VDD (30)
All Inputs, Outputs, Clocks Fully TTL
Compatible
3-State Outputs
Performance of Unmounted RAMs:
ACCESS
TIME
ROW
ADDRESS
(MAX)
120 ns
150 ns
200 ns
ACCESS
TIME
COLUMN
ADDRESS
(MAX)
75 ns
100 ns
135 ns
READ
OR
WRITE
CYCLE
(MIN)
230 ns
260 ns
330 ns
READ,
MODIFY,
WRITE
CYCLE
(MIN)
260 ns
285 ns
345 ns
Common CAS Control with Common DataIn and Data-Out Lines
Low Power Dissipation:
TM4164FL8-12
TM4164FL8-1 5
TM4164FL8-20
0
VDD (1)
CAS (2)
DQ1 (3)
AO (4)
A1 (5)
Utilizes Eight 64K Dynamic RAMs in Plastic
Chip Carrier
TMS4164-12
TMS4164-15
TMS4164-20
•
•
3D-PIN
SINGLE-IN-L1NE PACKAGE
(TOP VIEW)
Single +5-V Supply (10% Tolerance)
OPERATING
(TYP)
1600 mW
1400 mW
1080 mW
STANDBY
(TYP)
140 mW
140mW
140 mW
Operating Free-Air Temperature ... 0 DC to
70 DC
Do
Do
Do
Do
Do
Do
Do
Do
en
Q)
:;
"C
0
~
~
-
C
description
PIN NOMENCLATURE
AO-A7
Address Inputs
CAS
Column Address Str?be
DQ1-DQ8 Data In/Data Out
NC
No Connection
RAS
Row Address Strobe
+5-V Supply
VDD
Ground
VSS
W
Write Enable
The TM4164FL8 series is a 51 2K, dynamic randomaccess memory module organized as 65,536 x 8 bits
in a 30-pin single-in-line package comprising eight
TMS4164FPL, 65,536 x 1 bit dynamic RAMs in
18-lead plastic chip carriers mounted on top of a
substrate together with eight 0.2 p.F decoupling
capacitors. Each TMS41 64FPL is described in the data
sheet and is fully electrically tested and processed according to Tl's MIL-STD-8838 (as ammended for commercial applications) flows prior to assembly. After
assembly onto the SIP, a further set of electrical tests
is performed. The TM4164FL8 is rated for operation
from OOC to 70°C.
Copyright © 1983 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
5-9
TM4164FL8
65,536 BY 8·BIT DYNAMIC RAM MODULE
logic symbol t
(4)
(5)
A1
(7)
A2
(8)
A3
(11 )
A4
(12)
A5
(14)
A6
(15)
A7
(27)
RAS
(2)
CAS
(21)
RAM 64K X 8
AO
Vii
Z30
Z31
Z32
Z33
Z34
Z35
Z36
Z37
........
"
........
Z38
Z39
Z40
.,
r30 - 2008/21 DO 31
32 33-f34
0
<::::J
35
36
,;,
37 20015/2107_
38 ~C20[ROW]
D)
3
~
:t>
s:
s:0
Q.
C
\742
(3)r-:Z41
(6)
002
(10)
003
(13)
004
(16)
005
(20) 006
(23)
007
(25)
008
CD
en
001
>
0
A 65.535
38· I- G23/[REFRESH ROW]
24 [PWR OWN]
38
39 ~ C21[COL]
G24
39
39
&
I> 23C22
40
24EN
40
23.210
41
A.220
AZ42
..
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions in IEEE and IEC. See explanation on page 10-1.
5-10
,
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
TM4164FL8
65,536 BY 8·BIT DYNAMIC RAM MODULE
functional block diagram
AO
A1
A2
A3
A4
A5
A6
A7
RAS
CAS
Vi
(41
(51
(71
(81
(111
(121
(141
(151
(271
(21
(211
M1
~
.... f--,t:::.
....
r-..
OQ1
(31
I
~
~f--.J::::..
.....
.1'---
OQ2
(61
I
8
~~
.....
OQ3
(101
.....
I
8
~
".....
OQ4
(131
M5
8
~~
.... -
AO-A7
RAS
RAS
-
CAS
CAS
-W
°
Voo
I
I
Vf~~
OQ5 (161
M21
8
~~
....
RAS
-
CAS
W
Q~
°
OQ6 (201
I
I
en
Q)
RAS
~
CAS
I°
:2
:2
.....
.....
W
Q~
OQ7 (231
f
I
JM4
8
o
Q~
RAS
CAS
-
w
a
l
-
C
~ RAS
..... -CAS
AO-A7
Voo Vss
AO-A7
.... -w
DaB ''''
I
(11
VOO
(301
VOO
(91
VSS
(221·
VSS
M61
"C
~f--.J::::..
VOO VSS
I°
I
AO-A7
r--.. -W
~
RAS
CAS
I
Q~
o
v~o Vss
I
I
I M7 I
AO-A7
°
Vi
VOO VSS
VOO VSS
M3
"
I
AO-A7
I
I
AO-A7
1
I°
Q~
vio Vss
I
fC1"'fC8
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
5·11
TM4164FL8
65,536 BY 8·BIT DYNAMIC RAM MODULE
operation
The TM4164FL8 series operates as eight TMS4164s connected as shown in the functional block diagram. Refer to
the TMS4164 data sheet for details of its operation.
specifications
For TMS4164 electrical specifications, refer to the TMS4164 data sheet.
single-in-line packages
PC substrate: 0,79 mm (0.031) minimum thickness
Bypass capacitors: Multilayer ceramic
Leads: Tin over brass
MECHANICAL DATA
30-pin single-in-line package
76.84 (3.025)
75,57 (2.975)
5,08 (0.200)11
MAX
c
I dl
<:::J
D)
3
(i'
::c
l>
s:
s:o
--11-
PIN SPACING 2,54 (0.100) T.P.--J.-l
(See Note a)
Q.
0,305 (0.012)
0,203 (0.008)
0,51 (0.020).
0,41 (0.016)
C
(;'
I/)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTE a. Each pin centerline is locaied within 0,25 (0.010) of its true longitudinal position.
TI single-in-line package nomenclature
TM
4164
F
L
8
-15
L
Max Access
-12 120 ns.
-15 150 ns
-20 200 ns
L OOC to 70°C
T
~
(76.2 x 16.5 mm)
(3.0 x 0.65 inches)
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
5-12
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TeXAS 75265
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM Devices
Static RAM and Memory Support Devices
Applications Information
Logic Symbols
Mechanical Data
TI EPROMS INCORPORATE FAST PROGRAMMING CAPABILITY
The TMS2764 64K EPROM and TMS27128 128K EPROM (industry standard JEDEC approved pin outs) may
be programmed with the fast programming algorithm reducing programming time by a factor of 5 to 10X.
The TMS2516 16K EPROM, TMS2532 32K EPROM, TMS2564 64K EPROM and TMS2732A 32K EPROM
(JEDEC approved pin out) may be programmed with either the standard 50-millisecond pulse or a fast
10-millisecond pulse.
To take advantage of fast programming on TI EPROMs commercial programmers require the revision shown
below ..
TI EPROMs
PROGRAMMERS
TMS2516
TMS2764
TMS2532
TMS2564
TMS27128
TMS2732A
DATA 1/0
Model 120A/121
Unipak
Unipak 2
PROLOG
Revision G/V07 *
Revision D*
Revision V07 *
Revision V04 *
Revision V05 *
Revision V03 *
Update PROM UDP4
No Update PROM is required
M980/M910A Control Unit
PM9080 Personality Module
PA28/80B Pin Out Adapter
•
• Subsequent revisions are also valid
m
~
::J:J
o
3:
c
CD
<
C;'
-ATTENTION
CD
(I)
These devices contain circuits to protect the inputs and outputs against damage due to high static voltages
or electrostatic fields; however, it is advised that precautions be taken to avoid application of any voltage higher
than maximum-rated voltages to these high-impedance circuits.
Unused inputs must always be connected to' an appropriate logic voltage level, preferably either supply voltage
or ground.
Additional information concerning the handling of ESD sensitive devices is available from Texas Instruments
in a document entitled "Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and
Assemblies. "
Please contact
Texas Instruments
P.O. Box 401560
Dallas, Texas 75240
to obtain this brochure.
MOS
LSI
TMS2516. SMJ2516
16.384-BIT ERASABLE PROGRAMMABLE REA.O-ONLY MEMORIES
DECEMBER 1979 - REVISED AUGUST 1983
•
Organization ... 2048 X 8
•
Single
•
Pin Compatible with Existing ROMs and
EPROMs (16K, 32K, and 64K) .
•
JEDEC Standard Pinout
•
All Inputs/Outputs Fully TTL Compatible
•
Static Operation (No Clocks, No Refresh)
•
Max Access/Min Cycle Time:
+ 5-V
'2516-35
'2516-45
•
TMS2516 .•. JL PACKAGE
SMJ2516 ... J PACKAGE
(TOP VIEW)
Power Supply'
350 ns
450 ns
8-Bit Output for Use in MicroprocessorBased Systems \
•
N-Channel Silicon-Gate Technology
•
3-State Output Buffers
o
A7
A6
A5
A4
A3
A2
A1
AO
01
02
03
S
A10
PD/PGM
08
07
06
05
04
VSS
SMJ2516 .•. FG PACKAGE
(TOP VIEW)
r-. U
Low Power Dissipation:
~
Active ... 285 mW Typical
Standby ... 100 mW Typical
o
Vee
A8
A9
Vpp
Guaranteed DC Noise Immunity with
Standard TTL Loads
•
No Pull-Up Resistors Required
•
Available in Full Military Temperature Range
Version (SMJ2516)
The '2516 series are 16,384-bit, ultraviolet-light
erasable, electrically-programmable read-only
memories. These devices are fabricated using
N-channel silicon-gate technology for high speed and
simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by
Series 54/74 TTL circuits without the use of external
pull-up resistors, and each output can drive one Series
54/74 TTL circuit without external resistors. The data
outputs are three-state for connecting multiple devices
to a common bus. The '2516 is plug-in compatible
with the '401616K static RAM.
U
U
u
U U
U
zz>z z
A6
5
4 3 2 1323130
6.
29
A5
6
28
A4
A3
7
8
27
26
Vpp
9
25
S
10
11
24
23
PD/PGM
12
22
Q8
21
13
14 15 1617181920
Q7
Al
Ql
description
Z
NM
A8
A9
NC
Al0
(/)U~L!l
Q)
C
~
oa:
c..
w
Copyright © 1984 by Texas Instruments Incorporated
. TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 7~265
6-1
1MS2516, SMJ2516
16,384-B11 ERASABLE PROGRAMMABLE READ-ONLY. MEMORIES
The TMS2516s are offered in a dual-in-line cerpak package (JL suffix), rated for operation form ooe to 70 oe. The
SMJ' devices are offered in a 24-pin dual-in-line ceramic package (J) and in a 32-pad lead less ceramic chip carrier
(FG). The J package is designed for insertion in mounting-hole rows on 600-mil (15,2 mm) centers, whereas the FG
package is intended for surface mounting on solder pads on 0.050-inch (1,27 mm) centers. The FG package offers
a three layer rectangular chip carrier with dimensions 0.450 x 0.550 x 0.1 00 (11,42 x 13,97 x 2,54).
Since these EPROMs operate from a single + 5 V supply (in the read mode), they are ideal for use in microprocessor
systems. One other ( + 25 V) supply is needed for programming but all programming signals are TTL level, requiring
a single 10-ms pulse. For programming outside of the system, existing EPROM programmers can be used. Locations
may be programmed singly, in blocks, or at random. Total programming time for all bits is 20 seconds.
operation
MODE
FUNCTION
(PINS)
Read
PD/PGM
VIL
(18)
Output
Disable
Don't
Care
Power Down
Start
Inhibit
Program
Programming
Programming
Verification
VIL
VIL
VIH
Pulsed VIL
to VIH
Don't
S
VIL
(20)
VIH
VIH
VIL
+25 V
+25 V
+25 V
(or +5 VI
+5 V
+5 V
+5 V
+5 V
HI-Z
D
HI-Z
Q
Care
Vpp
(21)
+5 V
+5 V
+5V
VCC
(24)
+5 V
+5 V
Q
HI-Z
VIH
Q
(9 to 11,
13 to 17)
m
"'0
::D
o
s:
c
<
Cr
CD
CD
(I)
read/output disable
When the outputs of two or more '2516s are connected to the same bus"the output of any particular device in the
circuit can be read with no interference from the competing outputs of the other devices. The device whose output
is to be read should have a low-level TTL signal applied to the Sand PD/PGM pins. All other devices in the circuit
should have their outputs disabled by applying high-level signals to these same pins. PD/PGM can be left low, but
it may be advantageous to power down the device during output disable. Output data is accessed at pins 01 through
08. On the '2516-45, data can be accessed in 450 ns and access time from Sis 150 ns. On the '2516-35, data
can be accessed in 350 ns and access time from S is 120 ns. These access times assume that the addresses are stable.
power down
Active power dissipation can be cut by 64% by-applying a high TTL signal to the PD/PGM pins. in this mode all outputs are in a high-impedance state.
erasure
Before programming, the '2516 is erased by exposing the chip through the transparent lid to high-intensity ultraviolet
light having a wavelength of 253.7 nm (2537 angstroms). The recommended minimum exposure dose (UV intensity
times exposure time) is fifteen watt-seconds per square centimeter. Thus, a typical 12-milliwatt per-square-centimeter,
filterless UV lamp will erase the device in a minimum of 21 minutes. The lamp should be located about 2.5 centimeters
(1 inch) above the chip during erasure. After erasure, all bits are in the "1" state (assuming a high-level output corresponds to logic "1"). It should be noted that normal ambient light contains the correct wavelength for erasure.
Therefore, when using the '2516, the window should be covered with an opaque lid.
start programming
After erasure (all bits in logic "1" state), logic "O'S" are programmed into the desired I~cations. A "0" can be erased
only by ultraviolet light. The programming mode is achieved when Vpp is 25 V and S is at VIH. Data is presented
6-2
TEXAS .
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS2516, SMJ2516
16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
in parallel (8 bits) on pins 01 through 08. Once addresses and data are stable, a 1a-millisecond TTL high-level pulse
should be applied to the PGM pin at each address location to be programmed. Maximum pulse width is 55 milliseconds.
Locations can be programmed in any order. Several '2516s can be programmed simultaneously when the devices
are connected in parallel.
inhibit programming
When two or more devices are connected in parallel, data can be programmed into all devices or only chosen devices.
'2516s not intended to be programmed (i.e., inhibited) should have a low level applied to the PD/PGM pin and a highlevel applied to the Spin.
program verification
A verification is done to see if the device was programmed correctly. A verification can be done at any time. It can
be done on each location immediately after that location is programmed. To do a verification, V~p may be kept at
+25 V.
logic symbol t
EPROM 2048x8
AO
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
PD/PGM
(8)
0
(7)
(6)
A\]
(5)
(4)
A\]
(3)
(2)
A\]
0
>A 2047 A\]
(1 )
A\]
(23)
A\]
(22)
A\]
(19)
A\]
(18)
.. "'"
b
(20)
(9)
01
(10)
(11 )
(13)
02
03
04
(14)
(15)
05
06
(16)
(17)
10
07
08
7f:Nl
U)
Q)
(,)
'S;
Q)
C
~
0
a:
c..
w
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions in IEEE and IEC. See explanation on page 10-1.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) t
Supply voltage, Vee (see Note 1) .............................................
- 0.3 V to 7 V
Supply voltage, Vpp (see Note 1) ............................................
- 0.3 V to 28 V
All input voltages (see Note 1) ...............................................
-:- 0.3 V to 7 V
Output voltage (operating, with respect to VSS) ..................................
- 0.3 V to 7 V
Operating free-air temperature range: TMS' ...................................... ooe to 70°C
Operating case temperature range:
SMJ'. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
- 55 °e to 125°e
Storage temperature range ................................................
- 65 °C to 150 °e
t Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maxi mum-rated conditions for extended periods may affect device reliability.
NOTE:
1. Under absolLte maximum ratings, voltage values are with respect to the most negative supply voltage, VSS (substrate).
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-3
1MS2516
16.384-BI1 ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
recommended operating conditions
TMS2516-35
PARAMETER
MIN
MAX
MIN
5
5.25
4.75
4.75
Supply voltage, VCC (see Note 2)
Supply voltage, Vpp (see Note 3)
VCC
0
Supply voltage, VSS
High-level input voltage, VIH
2
Low-level input voltage, VIL
-0.1
Operating free-air temperature, T A
NOM
MAX
5
5.25
UNIT
V
V
VCC
0
VCC+ 1
0.8
350
0
Read cycle time, tc(rd)
NOTES:
TMS2516-45
NOM
70
V
2
VCC+ 1
0.8
-0.1
450
0
V
V
ns
°c
70
2. Vee must be applied before or at the same time· as Vpp and removed after or at the same time as Vpp. The device must not be inserted into
or removed from the board when Vpp or Vee is applied.
3. Vpp can be connected to Vee directly (except in the program mode). Vee supply current in this case would be ICC + Ipp. During programming.
Vpp must be maintained at 25 V (± 1 V).
electrical characteristics over full ranges of recommended operating conditions
PARAMETER
VOH
VOL
TEST CONDITIONS
10H = -400 p.A
10L = 2.1 rnA
High-level output voltage
Low-level output voltage
II
Input current (leakage)
10
Output current (leakage)
IpP1
Vpp supply current
IpP2
Vpp supply current
(during program pulse)
"'0
~
o
3:
ICCl
ICC2
2.4
V
V
0.45
±10
p.A
±10
p.A
6
rnA
30
rnA
Vpp
VCC supply current
(active)
=
UNIT
VI
(standby)
t Typical values are at T A
= 0 V to 5.25 V
= 0.4 V to 5.25 V
= 5.25 V, PD/PGM =
TMS2516
Typt
MAX
Vo
VCC supply current
m
MIN
VIL
PD/PGM
=
VIH
PD/PGM
=
VIH
20
30
rnA
=
57
100
rnA
S=
PD/PGM
VIL
25°C and nominal voltages.
c
CD
<
1 MHzt
capacitance over recommended supply voltage and operating free-air temperature ranges, f
c:;o
CD
(II
TEST CONDITIONS
PARAMETER
Ci
Input capacitance
VI
Co
Output capacitance
Vo
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
t Capacitance measurements are made on a sample basis only.
t Typical values are T A = 25°C and nominal voltages.
6-4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS2516
Typt
MAX
UNIT
4
6
pF
8
12
pF
TMS2516
16,384·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORIES
switching characteristics over full ranges of recommended operating conditions (see Note 4)
TEST CONDITIONS
PARAMETER
(SEE NOTES 4 AND 5)
talA)
Access time from address
talS)
Access time from chip select
talPR)
Access time from PD/PGM
250
250
address change
tdislS)
350
280
1 Series 74 TTL load,
select during read onlyi
trS 20 ns,
Output disable time from chip
tfs20 ns
350
0
CL = 100 pF,
Output disable time from chip
tdislS)
TMS2516-45
Typt
MAX
MIN
120
Output data valid after
tv(A)
TMS2516-35
Typt
MAX
MIN
0
select during program
280
ns
150
ns
450
ns
ns
0
100
UNIT
450
0
100
ns
120
120
ns
100
100
ns
and program verify i
tdislPR)
Output disable time
from PD/PGM i
0
t All typical values are at T A = 25°C and nominal voltages.
~ Value calculated from 0.5 volt delta to measured output level.
recommended timing requirements for programming T A
25°C (see Note 4)
PARAMETER
MIN
TMS2516
Typt
MAX
55
UNIT
tw(PR)
Pulse duration, program pulse
9
trlPR)
Rise time, program pulse
5
ns
tflPR)
5
2
ns
tsulA)
Fall time, program pulse
Address setup time
tsulS)
Chip-select setup time
2
flS
tsulD)
Data setup time
2
fls
CI)
tsulVPP)
Setup time from Vpp
0
ns
Q)
(.)
thlA)
Address hold time
2
flS
'S;
thiS)
Chip-select hold time
2
flS
thlD)
Data hold time
2
fls
t Typical values are at nominal voltages.
NOTES:
4. Timing measurement reference levels: inputs O.B V and 2 V, outputs 0.65 V and 2.2 V.
5. Common test conditions apply for tdis except during programming. For talA). taIS), and tdis' PDIPGM
ms
fls
Q)
C
~
=S=
VIL'
oa::
a..
w
4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-5
SMJ2516
16,384-B11 ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
recommended operating conditions
SMJ2516-35
PARAMETER
MIN,
Supply voltage, VCC (see Note 2)
Supply voltage, Vpp (see Note 3)
MAX
MIN
NOM
MAX
5
5.5
4.5
5
5.5
4.5
Vec
0
Supply voltage, VSS
High-level input voltage, VIH
2
Low-level input voltage, VIL
-0.1
Read cycle time, tc(rd)
Operating case temperature, T C
NOTES:
SMJ2516-45
NOM
Vee
0
VCC+ 1
0.8
350
-55
V
V
V
2
VCC+ 1
0.8
-0.1
450
125
UNIT
V
V
ns
-55
125
°c
2. Vee must be applied before or at the same time as Vpp and removed after or at the same time as Vpp. The device must not be inserted into
or removed from the board when Vpp or Vee is applied.
3. Vpp can be connected to Vee directly (except in the program mode). Vee supply current in this case would be ICC + Ipp. During programming.
Vpp must be maintained at 25 V (± 1 V).
electrical characteristics over full ranges of recommended operating conditions
PARAMETER
TEST CONDITIONS
VOH
High-level output voltage
VOL
Low-level output voltage
II
Input current (leakage)
= -400/LA
IOL = 2.1 mA
VI = 0 V to 5.5 V
Vo = 0.4 V to 5.5 V
= 5.25 V, PD/PGM =
""C
:lJ
SMJ2516
Typt
MAX
2.4
10H
UNIT
V
0.45
V
±10
/LA
±10
6
/LA
mA
30
rnA
10
Output current (leakage)
IpP1
Vpp supply current
IpP2
Vpp supply current
(during program pulse)
PD/PGM
=
VIH
ICC1
VCC supply current
(standby)
PD/PGM
=
VIH
20
30
mA
ICC2
VCC supply current
(active)
=
57
100
mA
m
o
3!:
MIN
Vpp
S=
PDIPGM
VIL
VIL
t Typical values are at Te = 25°C and nominal voltages.
c
~
(i'
capacitance over recommended supply voltage arid operating case temperature ranges, f
CD
(I)
PARAMETER
TEST CONDITIONS
Ci
Input capacitance
VI
Co
Output capacitance
Vo
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
1 MHzt
SMJ2516
TYP:t
MAX
UNIT
4
6
pF
8
12
pF
t Capacitance measurements are made on a sample basis only.
Typical values are at T e = 25°C and nominal voltages.
*
18
6-6
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
SMJ2516
16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
switching characteristics over full ranges of recommended operating conditions (see Note 4)
TEST CONDITIONS
PARAMETER
SMJ2516-35
(SEE NOTES 4 AND 5)
talA)
Access time from address
ta(S)
Access time from chip select
ta(PR)
Access time from PD/PGM
tdis(S)
MAX
250
350
250
SMJ2516-45
Typt
MAX
MIN
280
1 Series 54 TTL load,
select during read onlyt
t r :520 ns,
Output disable time from chip
tf:520 ns
350
0
CL = 100 pF,
address change
Output disable time from chip
tdis(S)
Typt
120
Output data valid after
tv(A)
MIN
0
select during program
280
ns
150
ns
450
ns
0
100
UNIT
450
ns
0
100
ns
120
120
ns
100
100
ns
and program verifyt
Output disable time
tdis(PR)
0
from PD/PGMt
t All typical values are at T C = 25°C and nominal voltages.
t Value calculated from 0.5 volt delta to measured output
recommended timing requirements for programming T C
25°C (see Note 4)
PARAMETER
MIN
SMJ2516
Typt
MAX
55
UNIT
tw(PR)
Pulse duration, program pulse
9
tr(PR)
Rise time, program pulse
5
tf(PR)
Fall time, program pulse
5
ns
tsu(A)
Address setup time
2
p's
tsu(S)
Chip-select setup time
2
p's
tsu(D)
Data setup time
2
p's
tsu(VPP)
Setup time from VPP
0
ns
th(A)
Address hold time
2
p's
thIS)
Chip-select hold time
2
p's
th(D)
Data hold time
2
p's
t Typical values are at nominal voltages.
NOTES:
4. Timing measurement reference levels: inputs 0.8 V and 2 V, outputs 0.65 V and 2.2 V.
5. Common test conditions apply for tdis except during programming. For talA), taIS)' and tdis' PDIPGM
TEXAS
INSTRUMENTS
POST
OFFICE BOX 225012 • DALLAS. TEXAS 75265
=5 =
ms
ns
VIL'
en
Q)
(,)
·SQ)
c
~
oa:
a.
w
6-7
TMS2516, SMJ2516
16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
PARAMETER MEASUREMENT INFORMATION
V = 2.09 V
OUTPUT
UNDER TEST
-Jl'
RL = 7800
CL =.100 pF
FIGURE 1 - TYPICAL OUTPUT LOAD CIRCUIT
read cycle timing
~~-------tclrd)-------"""'·I
I
I
VIH
ADDRESSES
VIL
VIH
..
S
VIL
I
VIH
PD/PGM
m
VIL
"'tJ
I
jJ
VOH
0
3:
I
01-08
VOL
a IA
j.--t
,I
1---+
talS)
T
).
-=SI
----H-Z-------(t
VALID
0
CD
<
(S"
x:
standby mode
CD
VIH
(I)
ADDRESSES
ADDRESS N
VIL
Ii
VIH
PD/PGM
VIL
STANDBY
--------- -J=:
ACTIVE
.1
}-HI.Z~.I!::--------V-A-L-ID----------
tdiS(PR)..J.---..I
VALID
+ m
~---------------------------
VOH
01-08
1"
ADDRESS N
.
I:..
talPR) t
VOL
NOTE:
S must be in low state during Active Mode, "Don't Care" otherwise.
t ta(PR) referenced to PD/PGM or the address, whichever occurs last.
11
6-8
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
1MS2516, SMJ2516
16,384·B11 ERASABLE PROGRAMMABLE READ·ONLY MEMORIES
program cycle timing
..
I
ADDRESSES
PROGRAM~PROGRAM---J
1
::: -_..-J)i
ADDRESS N
:
~
/i!44II
o
VIL _ _---I
:I
:I
_I
~tsUISI~
PD/PGM
Vpp
Q1-Q8
:
I"
I
.:
trIPRI.....,
/. tSUIVPPI...j!
~
,.. -I
I
I
I
~
~
!I
I+-
I
DATA OUT
j.-
I I
I
I
inl't'"'-i
~
+5V-,
::::,:
\~tI
-I I
thlDIM
VIL---------~
!
I
+25VRP
~r:-A~-D-:E-!-S-
I
tWIPrl
IJ
1
r--thIAI~ :
I t a l S ' r ~I r-tdiSISI
i---tSUIAI--1
tdislSI--i
VERIFY
--.f
-
I
j.-t: IPRI
I
I
I
I
r
.
I
I
tsulDI
I
DATA
~
/' ~
I
I
I
IN }HIOZ{ D:~: }-c
CI)
Q)
(,)
os:
Q)
c
:E
oa:
c..
w
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
14
TEXAS
INSfRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-9
•
m
"'tJ
::IJ
o
~
C
m
<
(;'
m
en
6-10
TMS2532, SMJ2532
32,768·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORIES
MOS
LSI
DECEMBER 1979 - REVISED SEPTEMBER 1983
TMS2532 ... JL PACKAGE
•
Organization ... 4096 X 8
•
Single
•
Pin Compatible with Existing ROMs and
EPROMs (8K, 16K, 32K, and 64K)
SMJ2532 ... J PACKAGE
+ 5·V Power Supply
(TOP VIEW)
A7
VCC
A8
A9
•
JEDEC Standard Pinout
A6
A5
•
All Inputs/Outputs Fully TTL Compatible
A4
Vpp
A3
PD/PGM
•
Static Operation (No Clocks, No Refresh)
•
Max Access/Min Cycle Time:
'2532·30
'2532·35
'2532-45
•
300 ns
350 ns
450 ns
8-Bit Output for Use in MicroprocessorBased Systems
•
N-Channel Silicon-Gate. Technology
•
3-State Output Buffers
•
Low Power Dissipation:
A10
A11
AO
01
08
02
06
Q7
03
05
Vss
04
SMJ2532 ... FE PACKAGE
ITOP VIEW)
U
CO
..... U U
Z >
IUl
>
Active ... 400 mW Typical
Standby ... 125 mW Typical
o Available in Full Military Temperature Range
Version (SMJ2564)
rn
CD
CJ
A2
'S;
A1
The TMS2564 is offered in a dual-in-line ceramic package
(JL or JDL suffix) rated for operation from OOC to 70 0 C.
The SMJ2564 is offered in a 28-pin dual-in-line ceramic
package (J) and a leadless ceramic chip carrier (FE), rated
for operation from - 55°C to 125°C. The J package is
designed for insertion in mounting-hole rows on 600-mil
(15,2 mm) centers, whereas the FE package is intended for
surface mounting on solder pads on 0.050-inch (1,27 mm)
centers. The FE package offers a three-layer rectangular
chip carrier with dimensions 0.450 x 0.550 x 0.1 00
(11,43 x 13,97 x 2.54 mm).
ADVANCE INFORMATION
MILITARY PRODUCTS (SMJ) ONLY
This document contains information on a new
product. Specifications are subject to change
without notice.
C
01
The '2564 is a 65,536-bit ultraviOlet-light-erasable, electrically-programmable read-only memory. This device is
fabricated using N-channel silicon-gate technology for highspeed and simple interface with MOS and bipolar circuits.
All inputs (including program data inputs) can be driven by
Series 54/74 TTL circuits without the use of external
resistors. The data outputs are three-state for connecting
mUltiple devices to a common bus.
84
CD
AO
description
~
02
oa:
c.
C")UUl~UL!)(O
OZ~dzOO
w
teonnected internally. Vee need be
supplied to only one of these
two pins.
PIN NOMENCLATURE
A(N)
Address Inputs
NC
No Connection
PD/PGM
Power Down/Program
O(N)
Input/Output
SIN)
Chip Selects
VCC
VPP
+ 5-V Power Supply
+ 25-V Power Supply
VSS
O-V Ground
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-21
1MS2564, SMJ2564
65,536·B11 ERASABLE PROGRAMMABLE READ·ONLY MEMORIES
Sirlce this EPROM operates from a single + 5-V supply (in the read mode), it is ideal for use in microprocessor systems.
One other supply (+ 25 V) is needed for programming. Programming requires a single TTL-level pulse per location.
For programming outside of the system, existing EPROM programmers can be used. Locations may be programmed
singly, in blocks, or at random.
The '2564 is compatible with other 5-volt ROMs and EPROMs, including those in a 24-pin package.
operation
MODE
FUNCTION
(PINS)
Read
Output Disable
Power Down
PD/PGM
(22)
VIL
VIH
X
X
VIH
S1
(2)
VIL
X
VIH
X
X
S2
(27)
VIL
X
X
VIH
Vpp
(1)
+5 V
VCC t
(26/28)
Start
Inhibit
Programming
Programming
Pulsed VIH
VIH
X
X
VIL
X
VIH
X
X
VIL
X
X
VIH
+5 V
+5 V
+25 V
+25 V
+5 V
+5 V
+5 V
+5 V
+5 V
Q
HI-Z
HI-Z
0
HI-Z
to VIL
Q
(11 to 13,
15 to 19)
x = Don't care.
tOo not use the internal jumper of 26-28 to conduct PC board currents.
read/output disable
m
"'tJ
:u
o
s:
When the outputs of two or more '2564's are paralled on the same bus, the output of any particular device in the
circuit can be read with no interference from the competing outputs of the other devices. To read the output of the
'2564, the low-level signal is applied to the PD/PGM and S pins. All other devices in the circuit should have their
outputs disabled by applying a high-level signal to one of these pins. Output data is accessed at pins Ql to 08.
cc
power down
5°
c(II
Active power dissipation can be cut by over 68% by applying a high TTL signal to the PD/PGM pin. In this mode
all outputs are in a high-impedance state.
<
erasure
Before programming, the '2564 is erased by exposing the chip through the transparent lid to high intensity ultra-violet
light having a wavelength of 253.7 nm (2537 angstroms). The recommended minimum exposure dose (UV intensity
X exposure time) is fifteen watt-seconds per square centimeter. A typical 12 milliwatt per square centimeter,filterless
UV lamp will erase the device in about 21 minutes. The lamp should be located about 2.5 centimeters above the chip
during erasure. After erasure, all bits are in the high state. It should be noted that normal ambient light contains the
correct wavelength for erasure. Therefore when using the '2564, the window should be covered with an opaque label.
start programming
After erasure (all bits in logic high state), logic "a's" are programmed into the desired locations. A low can be erased
only by ultraviolet light. The programming mode is achieved when Vpp is 25 V. Data is presented in parallel (8 bits)
on pins 01 to 08. Once addresses and data are stable, a la-millisecond low TTL pulse should be applied to the PGM
pin at each address location to be programmed. Maximum pulse width is 55 milliseconds. Locations can be programmed
in any order. More than one '2564 can be programmed when the devices are connected in parallel. During programming, both chip select signals should be held low unless program inhibit is desired.
H
6-22
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS2564, SMJ2564
65,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
inhibit programming
When two or more '2564's are connected in parallel, data can be programmed into all devices or only chosen devices.
'2564's not intended to be programmed should have a high level applied to PD/PGM or 51 or 52.
logic symbol t
AO (10)
Al
A2
EPROM 8192x8
0
(9)
(8)
(11 )
(7)
A'l
(6)
A\)
(5)
A\)
(4)
O_ A\)
A_
8191 A\)
A3
A4
AS
A6
A7
03
04
(16)
05
(171
06
A\)
(25)
A8
A9
02
(13)
(15)
(3)
01
(12)
(18)
(24)
A'l
(21)
A\)
07
(19)
08
Al0
All
A12
(20)
(23)
12
(22)
PD/PGM
. (2)
EN
Sl
52
(27)
II)
Q)
(.)
-:;
Q)
c
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions in IEEE and IEC. See explanation on page 10-1.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted):j:
Supply voltage, Vee (see note 1) .............................................
-0.3 V to 7 V
Supply voltage, Vpp (see note 1) ............................................
-0.3 V to 28 V
-0.3 V to 7 V
All input voltages (see Note 1) ...............................................
Output voltage (operating with respect to VSS) ...................................
-0.3 V to 7 V
Operating free-air temperature range: TMS2564 ..................................
ooe to 70 0 e
Operating case temperature range:
SMJ2564. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
- 55 DC to 125 °e
Storage temperature range ................................................
- 65 DC to 150 0 e
~
oa:
c..
w
t Stresses beyond those listed under" Absolute maximum Ratings" may cause perm~nent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1:
Under absolute maximum ratings, voltage values are with respect to the most-negative supply voltage, VSS (substrate).
84
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-23
1MS2564
.65,536-BI1 ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
recommended operating conditions
Supply voltage, VCC (see Note 2)
Supply voltage, Vpp (see Note 3)
MIN
NOM
MAX
MIN
NOM
MAX
4.75
5
5.25
4.75
5
5.25
VCC
0
Supply voltage, VSS
High-level input voltage, VIH
2.2
-0.1 t
Low-level input voltage, VIL
VCC+ 1
0.8
0
V
V
2.2
VCC+ 1
0.8
-0.1 t
450
70
UNIT
V
VCC
0
350
Read cycle time, tc(rd)
Operating free-air temperature, T A
NOTES:
TMS2564-45
TMS2564-35
PARAMETER
0
70
V
V
ns
DC
2. Vee must be applied before or atlthe same time as Vpp and removed after or at the same time as Vpp. The device must not be inserted into
or removed from the board when Vpp or Vee is applied so that the device Is not damaged.
3. Vpp can be connected to Vee directly (except in the program mode). Vee supply current in this case would be lee + Ipp. During programming.
Vpp must be maintained at 25 V (± 1 V).
t The algebraic convention, where the more negative limit is designated as minimum. is used in this data sheet for logic voltage levels and time intervals.
electrical characteristics over full ranges of recommended operating conditions
PARAMETER
m
"0
:c
o
3:
TEST CONDITIONS
IpP2
VPP supply current (during program pulse)
ICCl
VCC supply current (standby)
= - 4OO I'A
= 2.1 mA
V, = 0 V to 5.25 V
Va = 0.4 V to 5.25 V
Vpp = MAX, PD/PGM =
PO/P(TIVl = V,L
PO/PGT\71 = V,H
ICC2
VCC supply current (active)
PO/~ = V,L
VOH
VOL
High-level output voltage
II
Input current (leakage)
'0
IpPl
Output current (leakage)
Vpp supply current
=
c
CD
(/I
0.45
V
±10
I'A
±10
I'A
18
mA
30
mA
25
35
mA
80
160
mA
25°e and nominal voltages.
PARAMETER
<
(=)0
UNIT
V
V,L
capacitance over recommended voltage and operating free-air temperature ranges, f
CD
TMS2564
Typt
MAX
2.4
IOH
10L
Low-level output voltage
t Typical values are at T A
MIN
TEST CONDITIONS
Ci
Input capacitance
V, = 0 V, f
Co
Output capacitance
Va
=
0 V, f
= 1 MHz
= 1 MHz
1 MHzt
TMS2564
UNIT
TYP~
MAX
4
6
pF
8
12
pF
t This parameter is tested on sample basis only.
t Typical values are T A = 25°e and nominal voltages.
18
6-24
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012. DALLAS. TEXAS 75265
TMS2564
65,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
switching characteristics over full ranges of recommended operating conditions (see Note 4)
TEST CONDITIONS
PARAMETER
(SEE NOTES 4 AND 5)
MIN
Access time from address
talA)
Access time from S1 and S2
ta(S)
CL = 100 pF,
(whichever occurs last)
1 Series 54/74 TTL Load
ta(PR)
Access time from PD/PGM
tv(A)
Output data valid after address change
t r :520 ns,
tf:520 ns
See Figure 1
Output disable time from chip select
tdis(S)
during read only (whichever occurs last) t
tdis(PR)
Output disable time from PD/PGM during standbyi
t All typical values are at T A
t
TMS2564-35
MAX
TMS2564-45
MIN
MAX
UNIT
350
450
ns
120
120
ns
450
ns
350
0
ns
0
0
100
O.
100
ns
0
100
0
100
ns
= 25 DC and nominal voltages.
Value calculated from 0.5 volt delta to measured output level.
recommended timing requirements for programming T A
25°C (see Note 4)
PARAMETER
MIN
TMS2564
Typt
MAX
55
UNIT
tw(PR)
Pulse duration, program pulse
9
tr(PR)
Rise time, program pulse
5
ns
tf(PR)
Fall time, program pulse
5
ns
tsu(A)
Address setup time
2
p.s
tsu(D)
Data setup time
2
p's
ms
tsu(VPP)
Setup time from VPP
0
ns
th(A)
Address hold time
2
p's
th(D)
Data hold time
2
p's
th(PR)
Program pulse hold time
0
ns
th(VPP)
VPP hold time
2
p.s
NOTES:
en
Q)
CJ
t Typical values are at nominal voltages.
4. Timing measurement reference levels: inputs 0.8 V and 2.2 V, outputs 0.65 V and 2.2 V. and Vpp during programming; 25 V ± 1 V.
5. Common test conditions apply for tdis except during programming. For talA). ta(S). and tdis. PD/PGM = Vil'
·S
Q)
c
:E
oa:
0..
W
84
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-25
SMJ2564
65,536-BI1 ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
recommended operating conditions
SMJ2564
, PARAMETER
Supply voltage, VCC (see Note 2)
MIN
NOM
4.5
5
Supply voltage, Vpp (see Note 3)
5.5
High-level input voltage, V,H
Low-level input voltage, V,L
V
V
2.2
-0.1 t
VCC+ 1
0.8
450
Read cycle time, tc(rd)
Operating case temperature, T C
UNIT
V
VCC
0
Supply voltage, VSS
NOTES:
MAX
-55
125
V
V
ns
°c
2. Vee must be applied'before or at the same time as Vpp and removed after or at the same time as Vpp. The device must not be inserted into
or removed from the board when Vpp or Vee is applied so that the device is not damaged.
3. Vpp can be connected to Vee directly (except in the program model. Vee supply current in this case would be ICC + Ipp. During programming,
Vpp must be maintained at 25 V (± 1 V).
.
t The algebraic convention, where the more negative limit is designated as minimum, is used in this data sheet for logic voltage levels and time intervals.
electrical characteristics over full ranges of recommended operating conditions
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
TEST CONDITIONS
= -400 p.A
10L = 2.1 mA
V, = 0 V to 5.5 V
Vo = 0.4 V to 5.5 V
Vpp = MAX, PDIPGM =
PD/PGM = V,L
PD/~ = V,H
PD/PGM = V,L
m
"
10
Output current (leakage)
IpPl
VPP supply current
IpP2
Vpp supply current (during program pulse)
ICCl
VCC supply current (standby)
ICC2
VCC supply current (active)
"'C
t Typical values are at Te
o
s:
capacitance over recommended voltage and case temperature ranges, f
cCD
=
TEST CONDITIONS
C;"
Ci
Input capacitance
V,
CI)
Co
Output capacitance
Vo
CD
UNIT
V
V,L
0.45
V
±10
±10
p.A
p.A
18
30
mA
mA
25
40
mA
80
160
mA
25°C and nominal voltages.
PARAMETER
<
SMJ2564
Typt MAX
2.4
10H
Input current (leakage)
::a
MIN
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
1 MHzt
SMJ2564
Typi
MAX
UNIT
4
6
pF
8
12
pF
t This parameter is tested on sample basis only.
i Typical values are Te = 25°C and nominal voltages.
11:
6-26
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
SMJ2564
65,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
switching characteristics over full ranges of recommended operating conditions (see Note 4)
TEST CONDITIONS
PARAMETER
SMJ2564
(SEE NOTES 4 AND 5)
MIN
Access time from address
talA)
450
Access time from S 1 and S2
ta(S)
CL = 100 pF.
(whichever occurs last)
1 Series 54/74 TTL Load
ta(PR)
Access time from PD/PGM
tv(A)
Output data valid after address change
t r :520 ns.
See Figure 1
during read only (whichever occurs last):j:
tdis(PR)
Output disable time from PD/PGM during standby:!:
t All typical values are at T C
=
UNIT
ns
150
ns
450
ns
0
tf:520 ns
Output disable time from chip select
tdis(S)
MAX
ns
0
100
ns
0
100
ns
25°C and nominal voltages.
t Value calculated from 0.5 volt delta to measured output level.
recommended timing requirements for programming TC
25°C (see Note 4)
PARAMETER
MIN
SMJ2564
Typt
MAX
55
UNIT
tw(PR)
Pulse duration. program pulse
9
tr(PR)
Rise time. program pulse
5
ns
tf(PR)
Fall time. program pulse
5
ns
tsu(A)
Address setup time
2
JlS
tsu(D)
Data setup time
2
Jls
ms
tsu(VPP)
Setup time from Vpp
0
ns
th(A)
Address hold time
2
Jls
th(D)
Data hold time
2
JlS
th(PR)
Program pulse hold time
0
ns
th(VPP)
Vpp hold time
2
JlS
t Typical values are at nominal voltages.
NOTES:
4. Timing measurement reference levels: inputs 0.8 V and 2.2 V. outputs 0.65 V and 2.2 V. and V~ring programming
5. Common test conditions apply for tdis except during programming. For talA). tarS). and tdis. PD/PGM = VIL.
= 25
..
t/)
Q)
(,)
oS
V ± 1 V.
Q)
C
~
o
a:
c..
w
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-27
TMS2564, SMJ2564
65,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
PARAMETER MEASUREMENT INFORMATION
UND~RU;=~; ~:LV
= 7BO 0
~ CL=100pF
FIGURE 1 - TYPICAL OUTPUT LOAD CIRCUIT
read cycle timing
VIH
ADDRESSES
VIL
--~I\-----X-
VIH
S1 & S2
VIL
VIH
PD/PGM
VIL
m
VOH
"0
01-08
XI
0
CD
VALID
__
VOL
s:
C
____HC-t.IAI=i
standby mode
c:
ri"
CD
VIH
en
ADDRESSES
__________A_D_D_R_ES_S_N__________
VIL
~
VIH
PD/PGM
-
____________
VIL
tdis(PR)
J~~----------A-D-D-R-ES-s--N-+-m---1
STANDBY
'Sl_____
-il~·--_~I
A_C_T_IV_E___________________
I..
VOH
01-08
_______V_A_L_ID______} - HI-Z
VOL
-I
ta(PR) r
-{~-_-----V-A-L-ID---------
t talPR) referenced to PD/PGM or the address, whichever occurs last.
Sl
6-28
and
52
_____
in Don't Care State in Standby Mode.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS2564 r SMJ2564
65 r 536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
program cycle timing
I
I"
VIH
ADDRESSES
PROGRAM
I
----~.j....-PROGRAM*
____V'
A-______
VIH
--<~
!I
I
I
I
I
I
I I
I I --; \.- ta(PR)
I.
-----;.!--~
I
I
I
I
r
I
I
1....--.........1
VIL
I
1\14
I
tr(PR).....
~IDI
i
14-
., tw(PR) I
I
I
~ t--tf(PR)
++ 5 Vv _
:
-
I
I
III:(: .~I~!~~-----
25
VPP
I
I
I
~
DATAl.
tsu(Vpp) ......
VIH
~I------
-I
VIL
PD/PGM
.1
tsu(A) ----'
tsu(D)
~
S1 & S2
I
I
14-- th(A)
ADDRESS
N+m
I
______
VOLiVlL
I
xl~
}~HI_zf ~t~:}-{
I I lei
1 I
I
VOHiVlH
I
-'
~
AD_D_R_ES_S_N_ _ _ _ _- : - - _ _ _
VIL
01-08
VERIFY
th(Vpp)
I
~I~ ~
'hIPRI
-..t ~ .,:-~--------
..
.~
Q)
C
~
oa:
"Equivalent to read mode.
c..
w
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-29
I
m
"'tJ
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o
s:
c
CD
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CD,
(I)
6-30
TMS2708, TMS27L08, SMJ2708, SMJ27LOe
1024-WORD BY 8-BIT
ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
MOS
LSI
DECEMBER 1979 - REVISED AUGUST 19B3
TMS2708 ... JL PACKAGE
SMJ2708 ... J PACKAGE
(TOP VIEW)
o
1024 X 8 Organization
o
All Inputs and Outputs Fully TTL
Compatible
o
Static Operation (No Clocks, No Refresh)
o
Max Access/Min Cycle Time
A7
'2708-35
'2708-45
'27L08-45
o
350 ns
450 ns
450 ns
3-State Outputs for OR-Ties
oN-Channel Silicon-Gate Technology
o
o
8-Bit Output for Use in MicroprocessorBased Systems
o
o
A5
A9
A4
A3
VBB
S(PE)
A2
A1
VDD
PGM
AO
08
01
07
02
06
03
05
04
VSS
Power Dissipation
'27L08
'2708
o
VCC
A8
A6
SMJ2708 ... FE PACKAGE
(TOP VIEW)
580 mW Max Active
800 mW Max Active
10% Power Supply Tolerance
(TMS27L08-45 and all SMJ' versions)
U
(O!'oUUUUCO
z I
talb
talA)
01-08
E1
II
II
\
S(PE)
tc(rd)
X
ADDRESSES VALID
VIH
:0
~114
tc(rd)
~
1 OF N* PROGRAM LOOPS
(
(
S (PE)*
(=r
th(PE)
CD
0
ADDRESSES
ADDRESS 0
VIL
tsu(A)..,
VIH(PR)
Program
Pulse
VIL(PR)
tsu(D)
01-08
PROGRAM
INPUTS
OUTPUT
VIL
~
th(A)
~
t
thlD)
-.I
M; tsulA)
Lt- twlPR) -+I
+I I+-
VIH3
ADDRESS 1 ... 1022
INPUT
th(A):I
1-tWI'RI~'L
~ -p;- 1+
t'UI,:.UT
X
th(D)~
-Pr
·s
IPE) is at + 12 V through N program loops where N < 100 msitw (PR).
NOTE: 01-08 outputs are invalid up to 10 "sec after programming is (PE) goes lowl.
All timing reference points in this data sheet (inputs and outputs) are 90% points.
6-38
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS. TEXAS 75265
t
thIDA)
INPUT
TMS2708, TMS27L08
SMJ2708, SMJ27L08
1024·WORD BY 8·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORIES
TYPICAL '27L08·45 CHARACTERISTICS
DEVICE POWER DISSIPATION vs TEMPERATURE
CURRENT vs TEMPERATURE
800
40r----r----r---,---~----r---_r--_,
700
:;:
E
600
c
0
.;:::
ca
Co
.~
i5
~
500
0
300
I
Q
a..
E
200
~
.............. wOr.s t
:;
~a.se
~'t'101).s
---
(.)
>-
--: I - -
400
~
a..
30
/I.f.qX,
............... ~/l.fI.J/I.f_
C.
~
Co
20
:::I
en
I
r----:YPICAL - 65%
r-- r--:::':::'
cYcle
- r--
10
100
o
S==5V
o
10
20
30
50
40
T A - Free-Air Temperature -
60
O~--~--~~--~--~----~--~--~
70
o
10
5
~
>
CD
01
II0
>
;
Co
;
0
ca
40
50
60
70
DC
ACCESS TIME vs TEMPERATURE
400
r-----
4
-~~
..............
3.5
~
..
300
1'lP\C~,!--
c
3
CD
E
..
j::
TYPICAL CONDITIONS
0.8
I----
200
~
....--
~
---
CD
U
U
.g
en
30
T A - Free-Air Temperature -
DC
STATIC OUTPUT VOLTAGE vs OUTPUT CURRENT
4.5
20
~
0.6
'-IO\.
0.4
~...-
0.2
o
o
~
-'
~
~
100
o
2
3
4
5
TYPICAL talCS)
o
10
20
30
40
T A - Free-Air Temperature -
10 - Output Current - mA
60
50
70
°C
Texas Instruments reserves the right to make changes at any time in orde~ to improve design and to supply the best product possible.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
6-39
III
m
"'C
:XJ
o
~
c
(I)
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(I)
6-40
TMS2716
2048·WORD BY 8·BIT ERASABLE
PROGRAMMABLE READ·ONLY MEMORI~S
MOS
LSI
DECEMBER 1979 - REVISED OCTOBER 1983
TMS2716 ... JL PACKAGE
(TOPVIEWI
•
2048 X 8 Organization
•
All Inputs and Outputs Fully TTL Compatible
•
Static Operation (No Clocks, No Refresh)
A6
•
Performance Ranges:
A5
A4
TMS2716-30
TMS2716-45
•
ACCESS TIME
(MAX)
300 ns
450 ns
A7
A3
CYCLE TIME
(MIN)
300 ns
450 ns
A2
3·State Outputs for OR· Ties
•
N·Channel Silicon-Gate Technology
•
8-Bit Output for Use in MicroprocessorBased Systems
•
Low Power ... 315 mW (Typical)
Vee(PEI
A8
A9
VBB
Al0
Al
VDD
S(PGM)
AO
08
01
02
07
06
03
05
04
VSS
PIN NOMENCLATURE
AO-Al0
description
01-08
Addresses
Data Out
ehip Select (Program)
-5-V Supply
+ 5-V Supply (Program Enable)
+ 12-V Supply
o V Ground
SIPGM)
The TMS2716 is an ultra-violet light-erasable, electrically programmable read-only memory. It has
VBB
Vee(PE)
16,384 bits organized as 2048 words of 8-bit length.
VDD
The device is fabricated using N-channel silicon-gate
VSS
technology for high-speed and simple interface with
MOS and bipolar circuits. All inputs (including program
data inputs) can be driven by Series 74 circuits
without the use of external pull-up resistors and each output can drive one Series 74 or 74LS TTL circuit without
external resistors. The TMS2716 guarantees 250 mV dc noise immunity in the low state. Data outputs are threestate for OR-tying multiple devices on a common bus. The TMS2716 is plug-in compatible with the TMS2708 and
the TMS27L08. Pin compatible mask programmed ROMs are available for large volume requirements.
en
CD
CJ
'S
This EPROM is designed for high-density fixed-memory applications where fast turn arounds and/or program changes
are required. It is supplied in a 24-pin dual-in-line cerpak (JL suffix) package designed for insertion in mounting-hole
rows on 600-mil (15,2 mm) centers. It is designed for operation from ooe to 70°C.
CD
C
~
oa:
operation (read mode)
c..
address (AO-A 10)
w
The address-valid interval determines the device cycle time. The ll-bit positive-logic address is decoded on-chip to
select one of 2048 words of 8-bit length in the memory array. AO is the least-significant bit and A 10 most-significant
bit of the word address.
chip select, program
[5
(PGM)]
When the chip select is low, all eight outputs are enabled and the eight-bit addressed word can be read. When the
chip select is high, all eight outputs are in a high-impedance state.
program
In the program mode, the chip select feature does not function as pin 18 inputs only the program pulse. The program
mode is selected by the Vee(PE) pin. Either 0 V or + 12 V on this pin will cause the TMS2716 to assume program cycle.
data out (01-08)
The chip must be selected before the eight-bit output word can be read. Data will remain valid until the address is
changed or the chip is deselected. When deselected, the three-state outputs are in a high-impedance state. The outputs will drive TTL circuits without external components.
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-41
TMS2716
2048·WORD BY 8·BIT ERASABLE
PROGRAMMABLE READ·ONLY MEMORIES
operation (program mode)
erase
Before programming, the TMS2716 is erased by exposing the chip through the transparent lid to high intensity ultraviolet
light (wavelength 2537 angstroms). The recommended minimum exposure dose (= UV intensity x exposure time)
is fifteen watt-seconds per square centimeter. Thus, a typical 12 milliwatt per square centimeter, filterless UV lamp
will erase the device in a minimum of 21 minutes. The lamp should be located about 2.5 centimeters above the chip
during erasure. After erasure, all bits are in the high state.
programming
Programming consists of successively depositing a small amount of charge to a selected memory cell that is to be
changed from the erased high state to the low state. A low can be changed to a high only by erasure. Programming
be normally accomplished on a PROM or EPROM Programmer, an example of which is TI's Universal PROM Programming Module in conjunction with the 990 prototyping system. Programming must be done at room temperature (25 °el
only.
to start programming (see program cycle timing diagram)
First bring the Vee(PE) pin to + 12 V or 0 V to disable the outputs and convert them to inputs. This pin is held high
for the duration of the programming sequence. The first word to be programmed is addressed (it is customary to begin
with the "0" address) and the data to be stored is placed on the 01-08 program inputs. Then a + 26 V program
pulse is applied to the program pin. After 0.1 to 1.0 milliseconds the program pin is brought back to 0 V. After at
least one microsecond the word address is sequentially changed to the next location, the new data is set up and the
program pulse is applied.
Programming continues in this manner until all words have been programmed. This constitutes one of N program loops.
The entire sequence is then repeated N times with N x tw(PR) ~ 100 ms. Thus, if tw(PR) = 1 ms; then N = 100,
the minimum number of program loops required to program the EPROM.
.
to stop programming
m
After cycling through the N program loops, the last program pulse is brought to OV, then Program Enable Vee(PE)
is brought back to ± 5 volts which takes the device out of the program mode. The data supplied by the programmer
must be removed before the address is changed since the program inputs are now data outputs and a change of address could cause a voltage conflict on the output buffer. 01-08 outputs are invalid up to 10 microseconds after
the program enable pin is brought from VIH(PE) to VIL(PE).
"tJ
::D
o
!:
o
CD
<
crCD
logic symbol t
AO (8)
(I)
EPROM 2048x8
0
Al (7)
(6)
A2
A3
A\)
(5)
(4)
A\)
(3)
A\)
A4
A5
A6
A2~47
(2)
A\)
(1)
A7
A\)
(23)
A8
A\)
(22)
A9
(20)
Al0
S
(18)
A\)
A\)
(9)
01
(10) 02
(11)
03
(13) 04
(14)
05
(15) 06
(16)
07
(17) 08
10
EN
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions in IEEE and lEe. See explanation on page 10-1.
6-42
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS2716
2048·WORD BY 8·BIT ERASABLE
PROGRAMMABLE READ·ONLY MEMORIES
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) t
Supply voltage, VBB (see Note 1)
-0.3 V to 7 V
Supply voltage, Vee (see Note 1)
-0.3 V to 15 V
Supply voltage, VOO (see Note 1)
-0.3 V to 20 V
Supply voltage, VSS (see Note 1)
-0.3 V to 15 V
All input voltage (except program) (see Note 1) ................................. .
-0.3 V to 20 V
Program input (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 V to 35 V
Output voltage (operating, with respect to VSS) ................................... .
-2 V to 7 V
Operating free-air temperature range ........................................... .
to 70 0
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
- 55°C to 125°e
ooe
e
t Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operating of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Under absolute maximum ratings, voltage values are with respect to the most-negative supply voltage, VSS (substrate), unless otherwise noted.
Throughout the remainder of this data sheet, voltage values are with respect to VSS'
recommended operating c.onditions
PARAMETER
Supply voltage, Vaa
Supply voltage, Vee
Supply voltage, VOO
MIN
NOM
MAX
-4.75
4.75
11.4
-5
-5.25
5.25
12.6
Supply voltage, VSS
High-level input voltage, VIH (except program and program enable)
5
12
0
UNIT
V
V
V
V
Vee+ 1
V
V
High-level program input voltage, VIH(PR)
2.4
11.4
25
Low-level input voltage, VIL (except program)
VSS
12.6
27
0.65
VSS
1
V
High-level program pulse input current (sink), IIH(PR)
40
rnA
Low-level program pulse input current (source), IIL(PR)
3
70
rnA
High-level program enable input voltage, VIH(PE)
12
26
Low-level program input voltage, VIL(PR)
Note: VIL(PR) max
:$
VIH(PR) - 25 V
Operating free-air temperature, T A
0
V
V
°e
electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)
PARAMETER
VOL
Low-level output voltage
II
Input current (leakage)
10
Output current (leakage)
laa
Supply current from Vaa
All inputs high,
ICC
Supply current from Vee
S
VOH
High-level output voltage
(Program)
TA
=
Supply current from VOO
IpE
Supply current from PE on Vee Pin
VPE = VOO
TA = 70 0 e
PO(AV)
Power Oissipation
TA
TA
=
=
0.4 V to 5.25 V
5 V,
(worst case)
=
=
ooe
ooe
MIN
Typt
MAX
S = 0 V
S = +5 V
UNIT
.S;
Q)
C
~
oa:
Q.
W
3.7
2.4
ooe
100
t All typical values are at T A
184
TEST CONDITIONS
= -100 p.A
10H = -1 rnA
10L = 1.6 rnA
VIL = 0 V to 5.25 V
S (Program) = 5 V, \/0 =
10H
C/)
Q)
(,)
V
1
1
10
1
0.45
10
10
20
rnA
8
rnA
V
p.A
p.A
26
45
rnA
2
4
540
595
720
rnA
315
375
mW
25°C and nominal voltages.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-43
TMS2716
2048·WORD BY 8·BIT ERASABLE
PROGRAMMABLE READ·ONLY MEMORIES
capacitance over recommended supply voltage range and operating free-air temperature range, f
PARAMETER
Ci
Input capacitance [except S (Program))
Ci(S)
S (Program) input capacitance
Co
Output capacitance
1 MHz
Typt
MAX
4
6
pF
20
30
pF
8
12
pF
UNIT
t All typical values are at TA =' 25°C and nominal voltages.
switching characteristics over recommended supply voltage range and operating free-air temperature range
PARAMETER
TMS2716-30
TEST CONDITIONS
talA)
ta(S)
Access time from address
Access time from S
tv(A)
Output data valid after address change
tdis
Output disable time t
tc(rd)
Read cycle time
MIN
TMS2716-45
MIN
300
120
CL = 100 pF
1 Series 74 TTL Load
tf(S), tf(A) = 20 ns
See Figure 1
MAX
0
0
300
MAX
450
120
0
120
0
UNIT
ns
ns
ns
120
450
ns
ns
t Value calculated from 0.5 volt delta to measured output level.
T A = 25°C program characteristics over recommended supply voltage range
PARAMETER
m··
MIN
MAX
0.1
1
ms
tt(PR)
Transition times (except program pulse)
Transition times, program pulse
30
20
2000
ns
ns
tsu(A)
Address setup time
10
p's
tsu(D)
Data setup time
10
p's
tw(PR)
Pulse duration, program pulse
tt
UNIT
tsu(PE)
Program enable setup time
10
p's
th(A)
Address hold time
1000
ns
o
thIDA)
th(D)
Address hold time after program input data stopped
Data hold time
0
1000
ns
ns
cCD
th(PE)
Program enable hold time
500
ns
tSLAX
Delay time, S (Program) low to address change
0
ns
"C
:lJ
s:
c:::
(;'
CD
(I)
PARAMETER MEASUREMENT INFORMATION
v
OUTPUT
UNDER TEST
= 2.4 V
~
frCl 1 P
RL 3100
00
F
=
FIGURE 1 - TYPICAL OUTPUT lOAD CIRCUIT
6-44
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
. 184
TMS2716
2048-WORD BY 8-BIT ERASABLE
PROGRAMMABLE READ-ONLY MEMORIES
read cycle timing
I-
-II-
tclrd)
ADDRESSES
V
ADDRESSES VALID
•
VIL
I
I
I
VIH
S IPGM)
I
I
I
I-
VOH
taIS)~
I
taIA)~
tvIA)--I
(
HI-Z,
01-08
VOL
=
"
ADDRESSES VALID
II
II
II
,I
\
I
VIL
-I
tclrd)
!
IH
I
I-- talA) --"""1
VALID
1_
~
NOT VALID
~
t
~tdis
}-HI.Z_'
VALID
program cycle timing
1 OF Nt PROGRAM LOOPS
VIHIPE)
----------a--ll
t - - - - - - - - : - - - - - - - - ! j~-------4L
r
~~
VeelPE)t
~
tsulPE)
thlPE)
-H r-
ADDRESS 0
ADDRESS 1 ... 2046
VIL
I.-
r---------"II
:
thlA) - ,
-1
f.-
~ tsulAI
theA) ~
thlD)
--j
--F1
ADDRESS Z047
r.1r\L
-;;=r
tsulA)
I ~ twIPR) --l=t;J
I
I I I--I
.
I. I
tW(PR)--iul
VILIPR)--.
tsulD)
-Fr
(
~ tsulD)
thID).,
=i;~AM :~~----IN-P-U-T---~X IN~T
tSLAX
1m,
J.J:lJ.
I
S IPGM)
'>
C
---i
I
ADDRESSES
VIHIPR)
en
Q)
(,)
Q)
~
Vee
-
--l=1 I- tsu(D)
)t
INPUT
~
thlD)
c..
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twIPR)
~
oa:
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:
~
thIDA)
E~T
t VCC(PE) is at a v or + 12 V through N program loops where N
This EPROM is supplied in a 28-pin dual-in-line ceramic package (JL suffix). It is pin compatible with the TMS2764
EPROM and is designed for operation from OOC to 70°C.
Q)
Q
:!
oa:
operation
The six modes of operation for the TMs27128 are listed in the following table.
FUNCTION
(PINS)
E
(20)
c.
w
MODE
Output
Power Down
Fast
Program
Inhibit
Disable
(Standby)
Programming
Verification
Programming
VIL
X
VIH
VIL
VIL
VIH
Read
G
VIL
VIH
X
VIH
VIL
X
PGM
(27)
VIH
VIH
X
VIL
VIH
X
Vpp
(1)
Vee
Vee
Vee
Vpp
Vpp
X
Vee
(28)
Vee
Vee
Vee
Vee
Vee
Vee
0
HI-Z
HI-Z
D
0
HI-Z
(22)
01-08
(11 to 13.
15 to 19)
4
Copyright © 1983 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains Information on a product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-61
1MS27128
131,072·811 ERASABLE PROGRAMMABLE READ·ONLY MEMORY
read
The dual control pins (E and G) must have low-level TIL signals in order to provide data at the outputs. ehip enable
(E') should be used for device selection. Output enable (G) should be used to gate data to the output pins.
power down
The'power-down mode reduces the maximum active curr~nt from 100' mA to 40 mAo A TTL high-level signal applied
to E selects the power-down mode. In this mode, the outputs assume a high-impedance state, independent of G.
erasure
Before programming, the TMS27128 is erased by exposing the chip to shortwave ultraviolet light that has a wavelength
of 253.7 nanometers (2537 angstroms). The recommended minimum exposure dose (UV intensity x exposure time)
is fifteen watt-seconds per square centimeter. A typical 12 mW/cm 2 UV lamp will erase the device in approximately
20 minutes. The lamp should be located about 2.5 centimeters (1 inch) above the chip during erasure. After erasure,
all bits are at a high level. It should be noted that normal ambient light contains the correct wavelength for erasure.
Therefore, when using the TMS27128, the window should be covered with an opaque label.
fast programming
Note that the application of a voltage in excess of 22 V to VPP may damage the TMS27128.
After erasure, logic "O's" are programmed into the desired locations. Programming consists of the following sequence
of events. With the level on VPP equal to 21 V and E at TTL low, data to be programmed is applied in parallel to
output pins 08-01. The location to be programmed is addressed. Once data and addresses are stable, a TTL low-level
pulse is applied to PGM. Programming pulses must be applied at each location that is to be programmed. Locations
may be programmed in any order.
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Programming uses two types of programming pulse: Prime and Final. The length of the Prime pulse is 1 millisecond;
this pulse is applied X times. After each application the byte being programmed is verified. If the correct data is read,
the Final programming pulse is then applied, if correct data is not read, a further 1 millisecond programming pulse
is applied up to a maximum X of 15. The Final programming pulse is 4X milliseconds long. This sequence of programming pulses and byte verification is done at Vee =: 6.0 V and VPP =: 21.0 V. When the full fast programming routine
is complete, all bits are verified with Vee =: VPP =: 5 V. A flowchart of the fast programming routine is shown in
Figure 1.
multiple device programming
<
Several TMS27128's can be programmed simultaneously by connecting them in parallel and following the programming sequence previously described.
CD
program inhibit
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The program inhibit is useful when prog~amming multiple TMS27128's connected in parallel with different data. Program inhibit can be implemented by applying a high-level signal to Eor PGM of the device that is not to be programmed.
H
6-62
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS27128
131,072·BI1 ERASABLE PROGRAMMABLE READ·ONLY MEMORY
DEVICE
FAILED
INCREMENT
ADDRESS
DEVICE
FAILED
en
(1)
(.)
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(1)
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FIGURE 1 - FAST PROGRAMMING FLOWCHART
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34
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
6-63
TMS27128
131,072·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORY
logic symbol t
EPROM 16384 X 8
AD (10)
o
A1 (9)
A2 (8)
A3 (7)
A4 (6)
A5 (5)
A6 (4)
(3)
A7-----4
A8 (25)
A9 (24)
(21)
A10-----1
(23)
A11-----1
A 12 _(2_)_ _--1
A13
(26)
13
_ (20)
E - -....-
G
(22)
...
EN
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and IEC. See explanation on page 10-1.
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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)+
Supply voltage, Vee ..................................................... . -0.6 V to 7 V
Supply voltage, Vpp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.6 V to 22 V
-0.6 V to7 V
All input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.6 V to 7 V
Operating free-air temperature range ............................................ ooC to 70 0 C
Storage temperature range ................................................
- 65°C to 150 0 C
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*Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
TMS27128
PARAMETER
MIN
4.75
Supply voltage, Vee
Supply voltage, Vpp
MAX
5.25
2
High-level input voltage, VIH
-0.1
0
Operating free-air temperature, T A
UNIT
V
V
Vee
Low-level input voltage, VIL (see Note 1)
NOTE 1:
NOM
5
Vee+ 1
V
0.8
70
°e
V
The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic voltage levels only.
18
6-64
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS27128
131,072·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORY
electrical characteristics over full ranges of .recommended operating conditions
TEST CONDITIONS
PARAMETER
High-level output voltage
VOL
Low-level output voltage
II
Input current (leakage)
10
IpP1
Output current (leakage)
Vpp supply current (read)
IpP2
Vpp supply current (program)
ICC1
VCC supply current (standby)
ICC2
VCC supply current (active)
E and G at VIL
t Typical values are at T A
=
MIN
= -400/lA
10L = 2.1 rnA
VI = 0 V to 5.25 V
Vo = 0.4 V to 5.25
Vpp = 5.25 V
VOH
Typt
MAX
UNIT
2.4
10H
V
0.45
V
±10
/lA
±10
5
/lA
rnA
E and PGM at VIL
50
rnA
Eat VIH
40
rnA
100
rnA
V
25°C and nominal voltages.
1 MHz
capacitance over recommended supply voltage range and operating free-air temperature range, f
Typt
MAX
Ci
Input capacitance
VI = 0 V
4
6
pF
Co
Output capacitance
Vo = 0 V
8
12
pF
PARAMETER
t Typical values are at T A
=
TEST CONDITIONS
MIN
UNIT
25°C and nominal voltages.
switching characteristics over recommended supply voltage range and operating free-air temperature range,
CL = 100 pF, 1 Series 74 TTL load (see note 2 and figure 2)
TMS27128-25 TMS27128-30 TMS27128-45
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
talA)
Access time from address
250
300
450
talE)
Access time from E
250
300
450
ns
ten(G)
tdis(G)+
Output enable time from G
100
120
150
ns
130
ns
tv(A)
E,
Output disable time from G
Output data valid time after change of address,
or
13,
0
60
0
whichever occurs first
0
105
0
0
ns
0
ns
NOTE 2: For switching characteristics and timing measurements, input timing reference levels are 0.8 V and 2 V; output timing reference levels are 0.8 V
and 2 V.
Value calculated from 0.5 volt delta to measured output level; tdis(G) is specified from G or
whichever occurs first. Refer to read cycle timing diagram.
*
r,
recommended conditions for fast programming routine, TA
cycle timing diagram)
= 25°C
MIN
NOM
MAX
UNIT
VCC
VPP
Supply voltage (see Note 3)
Supply voltage (see Note 4)
5.75
20.5
6
21
6.25
21.5
V
V
tw(lPGM)
PGM initial program pulse duration (see Note 5)
0.95
1
1.05
ms
twIFPGM)
PGM final Dulse duration (see Note 6)
63
ms
3.8
tsu(A)
Address setup time
2
tsu(D)
tsu(VPP)
Data setup time
VPP setup time
2
2
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(see note 2 and fast programming
PARAMETER
CI)
Q)
CJ
/ls
,.s
,.s
tsu(VCC)
VCC setup time
2
,.s
th(A)
Address hold time
0
,.s
th(D)
Data hold time
2
,.s
tsu(E)
tsu(G)
E setup time
G setup time
2
2
p.s
p.s
14
TEXAS
INsrRuMENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
6-65'
TMS27128
131,072·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORY
fast programming characteristics, T A
25°C (see note 2 and fast programming cycle timing diagram)
PARAMETER
tdis(GlFP
Output disable time from G (see Note 7)
TEST CONDITIONS
CL = 100 pF
ten(G)FP
Output enable time from G
1 Series 74 TTL load
NOTES:
MIN
o
Typt
MAX
130
150
2. For all switching characteristics and timing measurements, input timing reference levels are 0.8 V and 2 V; output timing reference levels are
0.8 V and 2 V.
3. Vee must be applied simultaneously or before Vpp and removed simultaneously or after Vpp.
4. When programming the TMS27128, connect a 0.1 I'F capacitor between Vpp and GND to suppress spurious voltage transients which may
damage the device.
5. The Initial program pulse duration tolerance is 1 ms ± 5%.
6. The length of the Final pulse will vary from 3.8 ms to 63 ms depending on the number of Initial pulse applications (X).
7. This parameter is only sampled and is not 100% tested.
PARAMETER MEASUREMENT INFORMATION
v
= 2.09 V
RL = 780 (}
OUTPUT-1
UNDER TEST·
T
CL = 100 pF
NOTE: tf S 20 ns and tr S 20 ns.
FIGURE 2 - TYPICAL OUTPUT LOAD CIRCUIT
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VIH
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XI
ADDRESSES
VIL
(I)
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VIH
E
I
I
VIL
ADDRESSES VALID
X
YI
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L"IAI
VIH
G
VIL
~
ten (G)
VOH
01-08
HI-Z
HI-Z
VOL
18
6-66
TEXAS
INSfRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS27128
131,072·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORY
fast program cycle timing
-rt------
PROGRAM
------1j..
I----
VIH
ADDRESS STABLE
ADDRESSES
~ tsu{Al
Q
--i
ADDRESS N + 1
. I
1_~:iVOH_ _ _-(f""----D-A-T-~-I-N-S-T-A-BL-E----"j}- HI-Z
VILiVOL
\-,.,------------'1-.
~ tsu{Dl
--i
I
VPP
VPP
Vee
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V I H - - - - - - - -....
PGM
tfU{Gl
tw(lPGMl
tw{FPGMl
H
I
1.---.1
I
~
G ~:~---------~--~------....~
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ten{GlF!
I
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Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
14
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
6-67
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6-68
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules . .
EPROM Devices . .
ROM Devices
~
Static RAM and Memory Support Devices
Applications Information . .
Logic Symbols
Mechanical Data
ATTENTION
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These devices contain circuits to protect the inputs and outputs against damage
due to high static voltages or electrostatic fields; however, it is advised that
precautions be taken to avoid application of any voltage higher than maximumrated voltages to these high-impedance circuits.
Unused inputs must always be connected to an appropriate logic voltage level,
preferably either supply voltage or ground.
Additional information concerning the handling of ESD sensitive devices is
available from Texas Instruments in a document entitled "Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies. "
Please contact
Texas Instruments
P.O. Box 401560
Dallas, Texas 75240
to obtain this brochure.
MOS
LSI
TMS4664
8192·WORD BY 8·BIT READ·ONLY MEMORY
JUNE 1983 - REVISED OCTOBER 1983
•
8192 X B Organization
•
Partitioned into Two 4K X 8 Banks
TMS4664 .•. NL PACKAGE
(TOP VIEW)
•
Fully Static (No Clocks, No Refresh)
•
All Inputs and Outputs TTL Compatible
•
Single 5·V Power Supply
•
Two Chip·Selects for Flexibility and PowerDown Option
•
Maximum Access Time from Address
... 450 ns
•
Typical Active Power Dissipation
... 275 mW
•
A7
A6
A5
A4
A3
A2
Al
AO
01
02
03
vee
A8
51/51
Vss
Available in Chip-on-Board Package Also
PIN NOMENCLATURE
AO - All
01 - 08
51/51,52/52
Addresses
Data Out
Chip Selects
Vcc
+5-V Supply
VSS
Ground
description
en
the TMS4664 is a 65,536-bit read-only memory organized as 8192 words of 8-bit length. The array is partitioned
into two 4096-words of 8-bit length banks. This makes the TMS4664 ideal for microprocessor based systems. The
device is fabricated using N-channel silicon-gate technology for high speed and simple interface with bipolar circuits.
All inputs can be driven directly by Series 74 TTL circuits without the use of any external pull-up resistor. Each output
can drive two Series 74 or 74S loads without external resistors. The data outputs are three-state for OR-tieing multiple devices on a common bus. Two chip-select controls allow data to be read. These controls are programmable, providing additional system decode flexibility. The data is always available, it is not dependent on external clocking of
the control pins.
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The TMS4664 is designed for high-density fixed-memory consumer applications.
This ROM is supplied in a 24-pin dual-in-line plastic (NL suffix) package designed for insertion in mounting-hole rows
on 600-mil centers. It is also available in the chip-an-board package. The device is designed for operation from OOC
to 70°C.
operation
address (AO-A 11)
The address-valid interval determines the device cycle time. The 12-bit positive-logic address is decoded on-chip to
select one of 8192 words of 8-bit length in the memory array. AO is the least-significant bit and A 11 the most-significant
bit of the word address. Additionally each bank of the array is activated by a particular address. Address FF8 will
allow entry and access to the low order bank and FF9 will allow entry and access to the high order bank. After a
set of A 12 (FF9 or FF8), a normal read cycle must be completed before another set is performed.
All address changes must be made within 30 ns of when the first address changes to prevent address skewing.
chip select/output enable (pins 20 and 21)
Each of these pins can be programmed during mask fabrication to be active with either a high or a low level input.
When both signals are active, all eight outputs are enabled and the eight-bit addressed word can be read. When either
signal is not active, all eight outputs are in a high-impedance state.
84
ADVANCE INFORMATION
. ThIa document contaIna information an a new product.
Specifications are subject to change without notice.
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-1
TMS4664
8192·WORD BY 8·BIT READ·ONLY MEMORY
data out (Q1-Q8)
The eight outputs must be enabled by both pins 20 and 21 before the output word can be read. Data will remain
valid until the address is changed or the outputs are disabled (chip deselected). When disabled, the three-state outputs are in a high-impedance state. Q1 is considered the least-significant bit, Q8 the most-significant.
The outputs will drive two Series 54/74 TTL circuits without external components.
functional block diagram
-VCC
-vss
DA T A OUTPUTS
Q1-0S
51/51 - -...-r---:C:-H='P-S:':E::-L=-EC=T::-LO-G='-C---'
52/52
t--"'-t
OUTPUT BUFFERS
Y GATING
Y DECODE
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X DECODE
8192 X 8 MEMORY MATRIX
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BANK
BANK
FFS
SELECT
LOGIC
FF9
absolute maximum ratings
-0.5 V to 7 V
Supply voltage to ground potential (see Note 1) ................................. .
-0.5 V to 7 V
Applied output voltage (see Note 1) .......................................... .
Applied input voltage (see Note 1) ........................................... .
-0.5Vto7V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Operating free-air temperature ................................,. . . . . . . . . . . . . . . ..
0 °C to 70°C
Storage temperature ......................................................
- 55°C to 150°C
NOTE 1:
Voltage values are with respect to
vss.
recommended operating conditions
PARAMETER
Supply voltage,
Vee
High-level input voltage, V,H
Low-level input voltage, V,L
Operating free-air temperature, T A
/
MIN
NOM
MAX
4.5
2
-0.5
5
5.5
0
VCC+1
O.S
70
UNIT
V
V
V
°c
18
7-2
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4664
8192·WORD BY 8·BIT READ·ONLY MEMORY
5 V ± 10% (unless otherwise noted)
electrical characteristics, T A
PARAMETER
TEST CONDITIONS
MIN
Vce=4.5 V,
IOH= -400 p.A
VOL
II
Vee-4.5 V,
IOL-3.2 mA
Input current
Vee=5.5 V,
10
Output leakage current
OVSVINS5.5 V
VO=0.4 V to Vee, Chip deselected
leCl
Supply current from Vee (active)
Vee=5.5 V,
VI=Vec output not loaded
ei
Input capacitance
VO-O V,
f= 1 MHz
TA-25 o e.
v.
TA=25 o e.
Co
VO=O
f=l MHz
Output capacitance
switching characteristics, T A
MAX
UNIT
2.4
High-level output voltage
Low-level output voltage
VOH
V
0.4
V
10
p.A
±10
p.A
80
mA
6
pF
12
pF
100 pFt
5 V ± 1 0%, 2 series 74 TTL loads, CL
PARAMETER
MIN
MAX
UNIT
talA)
Access time from address 1:
450
ns
ta(S)
Access time from chip select+
200
ns
tv(A)
Output data valid after address change
tdis
Output disable time from chip select
150
ns
20
ns
tAli AC measurements are made at 10% and 90% points
*Access time from page select is double normal access time.
NOTE 1: All address changes must be made within 30 ns of when the first address changes to prevent address skewing.
en
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read cycle timing
I
AO-All
:::~----....................-------- --.....------.....--.....~~~--------------~:-~\i_
I::
.....
II
EtS
I
tv(A)
-..JI
I
l.I
-----~
t'IAI
¢
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VAL'D
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I
1---'
---t ta(S) ~
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01-08
'S
I
tdis
I
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PROGRAMMING DATA
PROGRAMMING REQUIREMENTS: The TMS4664 NL is a fixed program memory in which the programming is performed
by TI at the factory during the manufacturing cycle to the specific customer inputs supplied in the format below. The device
is organized as 8192 8-bit words with address locations numbered 0 to 8191. The 8-bit words can be coded as a 2-digit
hexadecimal number between 00 and FF. All data words and addresses in the following format are coded in hexadecimal
numbers. In coding all binary words must be in positive logic before conversion to hexadecimal. Q1 is considered the least
significant bit and Q8 the most significant bit. For addresses. AO is least significant bit and A 11 is the most significant.
The input media containing the programming data can be in the form of cards or EPROMs.
Either 16K, 32K, or 64K EPROMs ·can be used or any combination of them.
The following is a description of how the cards must be formatted, should they be used instead of EPROMs.
84
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS. TEXAS 75265
7-3
TMS4664
8192·WORD BY 8·BIT READ·ONLY MEMORY
INPUT CARD FORMAT
Each code deck submitted by customer shall consist of the following:
1.
2.
3.
4.
Title Card
Comment Cards
Start of Data Card
Data Cards
The cards shall be standard 80 column cards with the information in the following format:
TITLE CARD
Information
Card Column
5
6
7,8
9 - 14
15
16 .:... 30
:0
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s:
•
The letters 'ZA' shall be punched in these columns.
Leave blank. A special device code number will be assigned by Texas Instruments.
(left justified)
Blank
Customer's Part Number, if required. (left justified)
Blank
32
Customer's Part Number to be included as part of device symbolization.
Options:
Y = Yes
N = No
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Blank
31
cCD
(I)
The word 'TITLE' shall be punched in these columns.
33 - 36
37
38 - 40
Blank
Type of Package
Options:
B = Chip on board
P = Plastic
Blank
41
Logic Level for device pin 20.
Options:
1 = chip select mode, outputs enabled with high level.
o = chip select mode, outputs enabled with low level.
42
Logic Level for device pin 21.
Options:
1 = chip select mode, outputs enabled with high level.
o = chip select mode, outputs enabled with low level.
43
Blank.
44
45 - 49
Blank.
Texas Instruments Device Series (4664, etc.)
(left justified)
184
7-4
TEXAS
INsrRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4664
8192·WORD BY 8·BIT READ·ONLY MEMORY
COMMENT CARDS
Any number of comment cards may be used for specifying the customer's name, individual to contact, telephone number,
address, any special instructions, etc. The format for these cards is as follows: The Letter 'C' (for comment) must be pun·
ched in column 1, columns 2 - 4 must be blank, and comments can be punched in columns 5 - 80.
START OF DATA CARD
This card is to identify that the next card will be the beginning of customer's code. Format is as follows: Columns 1 -4
must have '&ROM' punched in them. The remainder of card is blank.
DATA CARDS
There will be 256 data cards supplied for each customer code. Each card will contain (in hexadecimal) the data for 32 memory
locations. Each data card shall be in the following format:
Information
Card Column
1 - 4
5,6
Hexadecimal address of first word on the card, four bits in length.
Blank.
7 - 70
Data. Each 8-bit data byte is represented by two ASCII characters to represent a
hexadecimal value of '00' to 'FF'.
71, 72
Checksum. The checksum is the negative of the sum of all 8-bit bytes in the record
from columns 1 to 70, evaluate modulo 256 (carry from high order bit ignored). For
purposes of calculating the checksum, the value of columns 5 and 6 are d~fined to
be zero. Adding together, modulo 256, all 8-bit bytes from columns 1 to 70 (columns 5 and 6 = 0), then adding the checksum, results in zero.
73 - 76
80
Blank.
Card sequence number, in decimal.
(right justified).
rn
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Texas Instruments reserves the right to make changes at any time in order to improve design and to supply. the best product possible.
94
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-5
::c
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en
7-6
MOS
LSI
4096~WORD
TMS4732
BY B·BIT READ·ONLY MEMORY
MAY 1977 - REVISED JULY 1983
•
TMS4732 ••• JL OR NL PACKAGE
(TOP VIEW)
4096 X 8 Organization
•
All Inputs and Outputs TTL Compatible
•
Fully Static (No Clocks, No Refresh)
•
Single 5·V Power Supply
•
Maximum Access Time From Address:
TMS4732-30
TMS4732-35
TMS4732-45
o
A7
A6
A5
A4
A3
A2
Al
AO
01
02
03
V55
300 ns
350 ns
450 ns
Typical Power Dissipation ... 275 mW
•
3-State Outputs for OR-Ties
•
Pin-Compatible with TMS2532 EPROM
•
Two Output Enable Controls for Chip Select
Flexibility
VCC
A8
A9
52/52
51/51
Al0
All
08
07
06
05
PIN NOMENCLATURE
AO - All
Addresses
01 - 08
S1/S1, S2/52
Data Out
Chip Selects
Vcc
+5-V Supply
VS5
Ground
description
The TMS4732 is a 32,768-bit read-only memory organized as 4096 words of 8-bit length. This makes the TMS4732
ideal for microprocessor based systems. The device is fabricated using N-channel silicon-gate technology for high
speed and simple interface with bipolar circuits.
All inputs can be driven directly by Series 74 TTL circuits without the use of any internal pull-up resistor. Each output
can drive one Series 74 or 74Sload without external resistors. The data outputs are three-state for OR-tieing multiple devices on a common bus. Two chip-select controls allow data to be read. These controls are programmable, providing additional system decode flexibility. The data is always available, it is not dependent on external clocking of
the control pins.
The TMS4732 is designed for high-density fixed-memory applications such as logic function generation and
microprogramming. The part is pin compatible with the TMS2532 4096 x 8 EPROM, which aids in prototyping and
code verification.
This ROM is supplied in 24-pin dual-in-line-plastic (NL suffix) or ceramic (JL suffix) packages designed for insertion
in mounting-hole rows on 600-mil centers or chip on board. The device is designed for operation from OOC to 70°C.
operation
address (AO - A 11)
The address-valid interval determines the device cycle time. The 12-bit positive-logic address is decoded on-chip to
select one of 4096 words of 8-bit length in the memory array. AO is the least-significant bit and A 11 the most-significant
bit of the word address.
chip select/output enable (pins 20 and 21)
Each of these pins can be programmed during mask fabrication to be active with either a high- or a low-level input.
When both signals are active, all eight outputs are enabled and the eight-bit addressed word can be read. When either
signal is not active, all eight outputs are in a high-impedance state.
Copyright © 1983 by Texas Instruments Incorporated
TEMS .
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-7
TMS4732
40aS-WORD BY 8-BIT READ-ONLY MEMORY
data out (01 - aS)
The eight outputs must be enabled by pins 20 and 21 before the output word can be read. Data will remain valid
until the address is changed or the outputs are disabled (chip deselected). When disabled, the three-'state outputs
are in a high-impedance state. 01 is considered the least-significant bit, 08 the most-significant bit.
The outputs will drive two Series 54/74 TTL circuits with()ut external components.
logic symbol t
AO
ROM
4096xS
A1
(9)
A2
A3
02
A4
:D
0
~
C
m
<
(i"
m
-en
01
03
A5
04
A6
05
A7
as
AS
07
A9
as
A10
A11
S1
S2
EN
Pins 20 and 21 can be active-high as shown in the upper symbol or activelow as shown in the lower (partial) symbol.
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10-1.
11
7-8
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4732
4096·WORD BY 8·BIT READ·ONLY MEMORY
functional block diagram
~VCC
.--Vss
OAT A OUTPUTS
01-08
S1
CHIP SElECT LOGIC
52---....._"
OUTPUT BUFFERS
Y GATING
4096 X 8 MEMORY MATRIX
C/)
Q)
(,)
absolute maximum ratings
'S;
Supply voltage to ground potential (see Note 1) .................................... - 0.5 V to 7 V
Applied output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 V to 7 V
Applied input voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.5 V to 7 V
Power dissipation. . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 500 mW
Operating free-air temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. O°C to 70°C
Storage temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55 DC to 150 DC
NOTE 1: Voltage values are with respect to
Q)
o
~
o
a:
vss.
recommended operating conditions
PARAMETER
Supply voltage, Vee
MIN
NOM
MAX
4.5
5
5.5
High-level input voltage, VIH
2
Low-level input voltage, VIL
-0.5
0
Operating free-air temperature, T A
TEXAS
IN srRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
2.4 Vee+ 1
0.8
70
UNIT
V
V
V
°e
7-9
·TMS4732
4096-WORD BY 8-BiT READ-ONLY MEMORY
electrical characteristics, TA
o°e to 70 oe,
Vee
5 V ± 10% (unless otherwise noted)
PARAMETER
VOH
VOL
II
TEST CONDITIONS
High-level output voltage
Low-level output voltage
. Input current
MIN
10H= -400 /LA
IOL=3.2 mA
VCC=5.5 V,
OV:5VIN:55.5 V
Chip deselected
10
Output leakage current
Vo =0.4 V to Vcc,
ICCl
Supply current from VCC (active)
Ci
Input capacitance
VCC=5.5 V,
VO=O V,
f=l MHz
VI=VCC output not loaded
TA=25°C,
VO=O V,
f=l MHz
TA =25°C,
Co
Output capacitance
MAX
2.4
VCC=4.5 V,
VCC=4.5 V,
UNIT
0.4
V
V
10
/LA
±10
80
/LA
mA
6
pF
12
pF
switching characteristics, TA=Ooe to 70 oe, Vee=5 V ±10%, 2 series 74 TTL loads, eL=100 pFt
TMS4732-30
PARAMETER
MIN
TMS4732-35
MIN
MIN
UNIT
talA)
Access time from address
300
350
tarS)
tv(A)
Access time from chip select
120
120
120
ns
tdis
Output disable time from chip select
100
ns
20
MAX
TMS4732-45
MAX
450
Output data valid after address change
MAX
20
100
20
100
ns
ns
tAli AC measurements are made at 10% and 90% points
::c
o
3:
cCD
read cycle timing
<
..
AO-A11
C:;'
CD
:::-,,-----------------'l~
I
---I
----=:---"''i
Ar-------------+'1 ,
~
-t rI-- tvlA)
fA
I
VIH
VIL
I
I
Q1-Q8
:
"',
talS)
t--
::: ____ :.:-','AI~
VAL'D
tdiS
&I
I
11
7-10
TEXAS
INSfRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4732
4096·WORD BY 8·BIT READ·ONLY MEMORY
PROGRAMMING DATA
PROGRAMMING REQUIREMENTS: The TMS4732 is a fixed program memory in which the programming is performed by
TI at the factory during the manufacturing cycle to the specific customer inputs supplied in the format below. The device
is organized as 4096 8-bit words with address locations numbered 0 to 4095. The 8-bit words can be coded as a 2-digit
hexadecimal number between 00 and FF. All data words and addresses in the following format are coded in hexadecimal
numbers. In coding, all binary words must be in positive logic before conversion to hexadecimal. Q1 is considered the least
significant bit and Q8 the most significant bit. For addresses, AO is the least significant bit and A 11 is the most significant.
The input media containing the programming data can be in the form of cards or EPROMs.
Either 16K, 32K, or 64K EPROMs can be used, or any combination of them.
The following is a description of how the cards must be formatted, should they be used instead of EPROMS.
INPUT CARD FORMAT
Each code deck submitted by customer shall consist of the following:
1.
2.
3.
4.
Title Card
Comment Cards
Start of Data Card
Data Cards
The cards shall be standard 80 column cards with the information in the following format:
t/)
Q)
TITLE CARD
(.)
os:
Information
Card Column
5
6
Blank
7, 8
9 -
The word 'TITLE' shall be punched in these columns.
14
15
16 - 30
The letters 'ZA' shall be punched in these columns.
Blank
Customer's Part Number, if required. (left justified)
Blank
32
Customer's Part Number to be included as part of device symbolization.
Options:
Y = Yes
N = No
37
38 - 40
~
oa:
Leave blank. A special device code number will be assigned by Texas Instruments.
(left justified)
31
33 - 36
Q)
C
Blank
Type of Package
Options:
C = ceramic
P = plastic
B = chip on board
Blank
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • OALLAS. TEXAS 75265
7-11
TMS4732
4096·WORD BY B·BIT READ·ONLY MEMORY
41
Logic Level for device pin 20.
Options:
1 = chip-select mode outputs enabled with high level.
o = chip-select mode, outputs enabled with low level.
42
Logic Level for device pin 21
Options:
1 = chip-select mode outputs enabled with high level.
o = chip-select mode, 'outputs enabled with low level.
43
Blank
44
45 - 49
Blank
Texas Instruments Device Series (4732B, 4732C, etc.)
(left justified)
COMMENT CARDS
Any number of comment cards may be used for specifying the customer's name, individual to contact, telephone number,
address, any special instructions, etc. The format for these cards is as follows: The letter 'c' (for comment) must be punched in column 1, columns 2-4 must be blank, and comments can be punched in columns 5-80.
:a
START OF DATA CARD
o
s:
cCD
This card is to identify that the next card will be in the beginning of customer's code. Format is as follows: Columns 1-4
must have '&ROM' punched in them. The remainder of card is blank.
<
DATA CARDS
(;'
CD
en
There will be 128 data cards supplied for each customer code. Each card will contain (in hexadecimal) the data for 32 memory
locations. Each data card shall be in the following format:
Card Column
- 3
4
Information
Hexadecimal address of first word on the card, four bits in length.
Blank
5 - 68
Data. Each 8-bit data byte is represented by two ASCII characters to represent a hexadecimal
value of '00' to 'FF'.
69 - 70
Checksum. The checksum is the negative of the sum of all 8-bit bytes in the record from columns 1'to 68, evaluate modulo 256 (carry from high order bit ignored). For purposes of
calculating the checksum, the value of column 4 is defined as zero. Adding together, modulo
256, all 8-bit bytes from columns 1 to 68 (column 4 = 0), then adding the checksum, results
in zero.
EXAMPLE JCL DECK TO RUN GATE PLACEMENT
II CIC JOB CARD
/I EXEC GATEPLM, DEV=TM4732A, DOMTAPE=volume serial number
Input Cards
I
/I
The input card to PFP is: /lPFP DD DSN =&&PFPIN, DISP = OLD
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
7-12
TEXAS'
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4764
8192·WORD BY 8·BIT READ·ONLY MEMORY
MOS
LSI
JUNE 1981 - REVISED JULY 1983
TMS4764 ••. JL OR NL PACKAGE
(TOP VIEWI
•
8192 X 8 Organization
•
Fully Static (No Clocks, No Refresh)
•
All Inputs and Outputs TTL Compatible
•
Single 5-V Power Supply
A4
•
Maximum Access Time From Address:
A3
VCC
A8
A5
TMS4764-30
TMS4764-35
TMS4764-45
•
300 ns
350 ns
450 ns
Typical Active Power Dissipation
... 275 mW
Vss .........._~:.r--
PIN NOMENCLATURE
AO - A12
Addresses
01 - 08
Data Out
SIS
Chip Select
VCC
+5-V Supply
VSS
Ground
en
Q)
(J
oS;
Q)
c
description
:?!
The TMS4764 is a 65,536-bit read-only memory organized as 8192 words of 8-bit length. This makes the TMS4764
ideal for microprocessor based systems. The device is fabricated using N-channel silicon-gate technology for high
speed and simple interface with bipolar circuits.
oa:
All inputs can be driven directly by Series 74 TTL circuits without the use of any internal pull-up resistor. Each output
can drive two Series 74 or 74S loads without 'external resistors. The data outputs are three-state for OR-tieing multiple devices on a common bus. Pin 20 is programmable, providing additional system flexibility. The data is always
available, it is not dependent on external clocking of pin 20.
The TMS4764 is designed for high-density fixed-memory applications such as logic function generation and
microprogramming. It is pin compatible with TI's full line of ROMs and EPROMs.
This ROM is supplied in 24-pin dual-in-line-plastic (NL suffix) or ceramic (JL suffix) packages designed for insertion
in mounting-hole rows on 600-mil centers or chip on board. The device is designed for operation from OOC to 70°C.
operation
address (AO - A 12)
The address-valid interval determines the device cycle time. The 13·bit positive-logic address is decoded on-chip to
select one of 8192 words of 8-bit length in the memory array. AD is the least-significant bit and A 12 the most-significant
bit of the word address.
chip select (S or 51
Pin 20 can be programmed during mask fabrication to be active with either a high- or a low-level input. When the
signal is active, all eight outputs are enabled and the eight-bit addressed word can be read. When the signal is not
active, all eight outputs are in a high-impedance state.
Copyright © 1983 by Texas Instruments Incorporated
'TEXAS
'
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-13
TMS4764
8192·WORD BY 8·BIT READ·ONLY MEMORY
data out (a1 -a8)
The eight outputs must be enabled by pin 20 before the output word can be read. Data will remain valid until the
address is changed or the outputs are disabled (chip deselected). When disabled, the three-state outputs are in a highimpedance state. 01 is considered the least-significant bit, 08 the most-significant bit.
The outputs will drive two Series 54/74 TTL circuits without external components.
logic symbol t
ROM
AO
A1
A2
A3
8192x8
(9)
A4
03
AS
A6
A7
~
(14)
s:
A10
c:
A11
A12
S
CD
5'
CD
en
04
a5
06
07
0
C
a1
a2
a8
III
5
~L.E_N__:J_
....
Pin 20 can be active-high as shown in the upper symbol or active-low as
shown in the lower (partial) symbol.
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10-1.
7-14
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4764
8192·WORD BY 8·BIT READ·ONLY MEMORY
functional block diagram
.-Vcc
+-VSS
DATA OUTPUTS
01-08
SIS
CHIP SELECT LOGIC
OUTPUT BUFFERS
Y DECODE
X DECODE
Y GATING
8192 X 8 MEMORY MATRIX
en
Q)
(,)
'S;
Q)
absolute maximum ratings
C
Supply voltage to ground potential (see Note 1) .................................... - 0.5 V to 7 V
Applied output voltage (see Note 1) ............................................. - 0.5 V to 7 V
Applied input voltage (see Note 1) .............................................. - 0.5 V to 7 V
Power dissipation ..................................................... : . . . . . . . . .. 500 mW
Operating free-air temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. OOC to 70°C
Storage temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55°C to 150°C
~
oa:
NOTE 1: Voltage values are with respect to Vss.
recommended operating conditions
PARAMETER
Supply voltage, Vee
High-level input voltage, VIH
Low-level input voltage, VIL
Operating free-air temperature, T A
TEXAS
INsrRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
MIN
NOM
MAX
4.5
2
-0.5
0
5
5.5
UNIT
V
Vce+ 1
V
0.8
70
V
°e
7-15
TMS4764
8192·WORD BY 8·BIT READ·ONLY MEMORY
electrical characteristics, T A
5 V ± 10% (unless otherwise noted)
ooe to 70 De, Vee
PARAMETER
TEST CONDITIONS
MIN
VOH
High-level output voltage
VCC=4.5 V,
VOL
Low-level output voltage
VCC=4.5 V,
'I
Input current
VCC=5.5 V,
10
Output leakage current
Vo =0.4 V to VCC,
OVSVIN=55.5 V
Chip deselected
ICCl
Supply current from VCC (active)
VCC=5.5 V,
VI =VCC output not loaded
Ci
Input capacitance
VO=O V,
f= 1 MHz
TA=25°C,
Output capacitance
VO=O V,
f=l MHz
TA=25°C,
Co
MAX
UNIT
2.4
10H= -400 itA
IQL=3.2 mA
V
0.4
V
10
flA
±10
80
flA
mA
6
pF
12
pF
switching characteristics, TA=Ooe to 70 oe, Vee=5 V ±10%, 2 series 74 TTL loads, eL=100 pFt
TMS4764-30
PARAMETER
MIN
TMS4764-35
MIN
MAX
TMS4764-45
MAX
MIN
MAX
UNIT
talA)
ta(S)
Access time from address
300
350
450
ns
Access time from chip select
120
120
120
ns
tv(A)
Output data valid after address change
tdis
Output disable time from chip select
20
20
100
20
100
ns
100
ns
tAli AC measurements are made at 10% and 90% points
read cycle timing
..
AO-A12
I
I
I
tV(A)--I
: : -------------------""Ix
.
-----\1_
I:
I
I
I
Q1-Q8
::: _ _ _ _ _
:
~------------------------~:~
I
I --I
---f
~ t.IAI
ta(S)
r--
~
I
VALtD
I
7-16
10-
TEXAS
INsrRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
:
I
,..-
I
I
tdis
_ _
TMS4764
8192·WORD BY 8·BIT READ·ONLY MEMORY
PROGRAMMING DATA
PROGRAMMING REQUIREMENTS: The TMS4764 is a fixed program memory in which the programming is performed by
TI at the factory during the manufacturing cycle to the specific customer inputs supplied in the format below. The device
is organized as 8192 8-bit words with address locations numbered 0 to 8191. The 8-bit words can be coded as a 2-digit
hexadecimal number between 00 and FF. All data words and addresses in the following format are coded in hexadecimal
numbers. In coding, all binary words must be in positive logic before conversion to hexadecimal. Q1 is considered the least
significant bit and Q8 the most significant bit. For addresses, AO is least significant bit and A 12 is the most significant.
The input media containing the programming data can be in the form of cards or EPROMs.
Either 16K, 32K, or 64K EPROMs can be used, or any combination of them.
The following is a description of how the cards must be formatted, should they be used instead of EPROMS.
PROGRAMMING INSTRUCTIONS - 64K ROM
Each code deck submitted by customer shall consist of the following:
1.
2.
3.
4.
Title Card
Comment Cards
Start of Data Card
Data Cards
The cards shall be standard 80 column cards with the information in the following format:
TITLE CARD
Card Column
1 - 5
6
7,8
9 - 14
15
16 - 30
Information
The word 'TITLE' shall be punched in these columns.
The letters 'ZA' shall be punched in these columns.
oa:
Blank
Customer's Part Number, if required. (left justified)
32
Customer's Part Number to be included as part of device symbolization.
Options:
Y = Yes
N = No
38 - 40
Q)
C
Leave blank. A special device code number will be assigned by Texas Instruments.
(left justified)
Blank
37
CJ
.S;
~
Blank
31
33 - 36
t/)
Q)
Blank
Type of Package
Options:
C = ceramic
P = plastic
B = chip on board
Blank
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
7-17
TMS4764
8192·WORD BY 8·BIT READ·ONLY MEMORY
41
Logic Level for pin 20 on 24-pin package.
Options:
chip-select mode outputs enabled with high level.
1
chip-select mode, outputs enabled with low level.
o
42 - 44
Blank
45 - 49
Texas Instruments Device Series (ie. 4764B, 4764C, etc.)
(left justified)
COMMENT CARDS
Any number of comment cards may be used for specifying the customer's name, individual to contact, telephone number,
address, any special instructions, etc. The format for these cards is as follows: The letter 'C' (for comment) must be punched in column 1, columns 2-4 must be blank, and comments can be punched in columns 5-80.
START OF DATA CARD
This card is to identify that the next card will be in the beginning of customer's code. Format is as follows: Columns 1-4
must have '&ROM' punched in them. The remainder of card is blank.
DATA CARDS
::rJ
o
There will be 256 data cards supplied for each customer code. Each card will contain (in hexadecimal) the data for 32 memory
locations. Each data card shall be in the following format:
s:
Card Column
cCD
1 - 4
<
..
(=i"
CD
5,6
en
Information
Hexadecimal address of first word on the card, four bits in length.
Blank
7 - 70
Data. Each 8-bit data byte is represented by two ASCII characters to represent a hexadecimal
value of '00' to 'FF'.
71,72
Checksum. The checksum is the negative of the sum of all 8-bit bytes in the record from columns 1 to 70, evaluate modulo 256 (carry from high order bit ignored). For purposes of
calculating the checksum, the value of columns 5 and 6 are defined to be zero. Adding together,
modulo 256, all 8-bit bytes from columns 1 to 70 (columns 5 and 6 = 0). then adding the
checksum, results in zero.
73
76
Blank
77
80
Card sequence number, in decimal.
(right justified).
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
7-18
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
MOS
LSI
,
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
JUNE 1983 - REVISED OCT08ER 1983
•
8192 X 8 Organization
TMS4964 ... NL PACKAGE
(TOP VIEW)
•
Partitioned into Eight 1K X 8 Pages
•
Fully Static (No Clocks, No Refresh)
•
All Inputs and Outputs TTL Compatible
•
Single 5·V Power Supply
•
Two Chip-Selects for Flexibility and PowerDown Option
•
•
•
A7
Maximum Access Time from Address
... 450 ns
A6
Vee
A8
A5
A4
A3
A9
52/S2
51/S1
A2
Al0
Al
All
AO
08
01
02
Typical Active Power Dissipation
... 275 mW
Available in Chip-on-Board Package Also
Q7
03
06
05
VSS
04
PIN NOMENCLATURE
AO - All
01 - 08
Addresses
Data Out
51/S1,52/S2
ehip Selects
Vee
+5-V Supply
VSS
Ground
rn
description
Q)
(J
The TMS4964 is a 65,536-bit read-only memory organized as 8192 words of 8-bit length. The array is subdivided
into eight 1024 bits x 8 pages. The device is fabricated using N-channel silicon-gate technology for high speed and
simple interface with bipolar circuits.
':;
Q)
c
All inputs can be driven directly by Series 74 TTL circuits without the use of any external pull-up resistor. Each output
can drive two Series 74 or 74S loads without external resistors. The data outputs are three-state for OR-tieing multiple devices on a common bus. Two chip-select controls allow data to be read. These controls are programmable, providing additional system decode flexibility. The data is always available, it is not dependent on external clocking of
the control pins.
::?i
oa:
The TMS4964 is designed for high-density fixed-memory consumer applications.
This ROM is supplied in a 24-pin dual-in-line plastic (NL suffix) package designed for insertion in mounting-hole rows
on 600-mil centers. It is also available in the chip-on-board package. The device is designed for operation from ooe
to 70 o e.
operation
address (AO-A 11 )
The address-valid interval determines the device cycle time. The 12-bit positive-logic address is decoded on-chip to
select one of 8192 words of 8-bit length in the memory array. AO is the least-significant bit and A 11 the most-significant
bit of the word address. Additionally 24 addresses can generate traps which allow the selection of any 3 of 7 pages
to be active at any point in time. The 8th page is always active. After a write to a pointer register, a normal read
cycle must be completed before another write is performed. A normal read is an address outside of the range FEO to FE7.
All address changes must be made within 30 ns of when the first address changes to prevent address skewing.
chip select/output enable (pins 20 and 21)
Each of these pins can be programmed during mask fabrication to be active with either a high or low level input. When
both signals are active, all eight outputs are enabled and the eight-bit addressed word can be read. When either signal
is not active, all eight outputs are in a high-impedance state.
Copyright © 1983 by Texas Instruments Incorporated
ADVANCE INFORMATION
This document contains information on 8 new product.
Specifications are subject to change without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-19
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
data out (Q1-Q8)
The eight outputs must be enabled by both pins 20 and 21 before the output word can be read. Data will remain
valid until the address is changed or the outputs are disabled (chip deselected). When disabled, the three-state outputs are in a high-impedance state. 01 is considered the least-significant bit, 08 the most-significant bit.
The outputs will drive two Series 54/74 TTL circuits without external components.
page operation
The ROM is organized into 8K x 8-bit bytes. Only 12 address bits or a maximum of 4K bytes may be accessed at
one time. The 4K address space is segmented into four 1 K banks and memory is partitioned into eight 1 K pages.
Bank 3 containing page 7 is always resident. Any three of the eight pages, 0 thru 7, are immediately accessable.
The banks, which are defined by page pointers, are selected by address bits A3 and A4 (see Table 1).
TABLE 1
A4
A3
BANK
ADDRESS RANGE
L
L
0
000 - 3FF
L
H
L
1
2
3
BOO - BFF
H
Resident
400 - 7FF
COO - FDF
H = high level. L = low level
:ll
o
3:
o
CD
The content of the page pointers is loaded with address bits A2, A 1 and AO. Three different pag~s in the range 0
thru 7 may be loaded one into each of the three pointers. Table 2 shows address/page pointer relationship.
<
t)'
-
TABLE 2
CD
o
A2
A1
AD
PAGE
L
L
L
L
L
H
L
H
L
L
H
H
H
L
L
H
L
H
0
1
2
3
4
5
H
H
L
6
H
H
H
7
H
=
high level. L = low level
The pointers are write-only locations; to load the pointers, A 11 thru A05 are set to high logic levels. Then pointers
are always loaded by the range of addresses shown in Table 3.
TABLE 3
7-20
POINTER
ADDRESS RANGE
0
1
2
FEq to FE7
FEB to FEF
FFO to FF7
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
When an address outside the range FEO to FF7 is accessed, address bits A 11 and A 10 select pointer 0, 1 or 2 and
the pointer content is mapped to the internal address bits A 12, A 11 and A 10. When A 10 and A 11 are both high,
page 7 is selected (see Table 4). Internal address bits A9 thru AO are the same as the external address bits A9 thru AO.
TABLE 4
A11
A10
SELECTED
L
L
Pointer 0
L
H
Pointer 1
H
L
Pointer 2
H
H
Page 7
H
=
high level, L
=
low level
As an example, suppose it is desired to select the third 1 K ROM page by addresses 400 thru 7FF. This address space
is represented by pointer 1 because of the condition of A 11 and A 10. To write to pointer 1; bits A4, A3 = LH. The
contents of the pointer is 3; bits A2, A 1, AO = LHH. Therefore, location FEB is accessed.
functional block diagram
-Vcc
-VSS
DATA OUTPUTS
01-08
U)
Q)
(.)
'S;
51/S1
Q)
---II>--r-------------,
52/52
C
t - -....-t
CHIP SELECT LOGIC
OUTPUT BUFFERS
~
o
a:
Y GATING
8192 X 8 MEMORY MATRIX
PAGE
PAGE
SELECT
LOGIC
FEO to FF7
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-21
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
absolute maximum ratings
Supply voltage to ground potential (see Note 1) .................................... - 0.5 V to 7 V
Applied output voltage (see Note 1) ............................................. - 0.5 V to 7 V
Applied input voltage (see Note 1) .............................................. - 0.5 V to 7 V
Power dissipation ......................................................... .' . . . . .. 500 mW
Operating free-air temperature ....................................... ' ........... , O°C to 70°C
Storage temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .. - 55°C to 150°C
Note 1: Voltage values are with respect to VSS
recommended operating conditions
PARAMETER
Supply voltage, Vee
MIN
NOM
MAX
4.5
5
5.5
High-level input voltage, VIH
2
Low-level input voltage, VIL
-0.5
0
Operating free-air temperature, T A
electrical characteristics, T A
:0
o
o De to
70 De,
Vee
3:
VOH
caI
VOL
Low-level output voltage
Vee=4.5 V,
II
Input current
Vee=5.5 V,
n'
aI
10
Output leakage current
OVsVINs5.5 V
VO=0.4 V to Vee, Chip deselected
leel
Supply current from Vee (active)
Vee=5.5 V,
VI = Vee output not loaded
Input capacitance
VO=O V,
f= 1 MHz
TA=25 o e,
Output capacitance
VO=O V,
f= 1 MHz
TA=25 o e,
en
ei
Co
switching characteristics, T A
TEST CONDITIONS
oDe
Vee=4.5 V,
10H= -400 pA
IOL=3.2 mA
to 70 De,
Vee
MIN
2.4
MAX
V
°e
80
6
pF
12
pF
±10
MIN
UNIT
V
V
p.A
p.A
mA
0.4
10
5 V ±10%, 2 series 74 TTL loads, eL
PARAMETER
100 pFt
MAX
UNIT
talA)
Access time from address +
450
ns
ta(S)
Access time from chip select+
200
ns
tv(A)
Output data valid after address change
tdis
Output disable time from chip select
20
ns
150
tAli AC measurements are made at 10% and 90% points
*Access time from page select is double normal access time.
NOTE 1: All address changes must be made within 30 ns of when the first address changes to prevent address skewing.
7-22
70
V
V
5 V ± 10% (unless otherwise noted)
PARAMETER
High-level output voltage
<
Vee+ 1
0.8
UNIT
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
ns
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
read cycle timing
I
AO-A11
I
:::~------------------------------------~~~------------I
tV(A)--.J
I
---~:--\I.
Eli;
I
: : _____ =I
01-08
I.--
1
I
I
:
I:
~I____________________________________________~I-J
--f
'.(A,
ta(S)
I
I -.I
r--
¢
I
VALID
I
,.--
tdis
I
•
I
PROGRAMMING DATA
PROGRAMMING REQUIREMENTS: The TMS4964NL is a fixed program memory in which the programming is performed
by TI at the factory during the manufacturing cycle to the specific customer inputs supplied in the format below. The device
is organized as 8192 8-bit words with address locations numbered 0 to 8191. The 8-bit words can be coded as a 2-digit
hexadecimal number between 00 and FF. All data words and addresses in the following format are coded in hexadecimal
numbers. In coding all binary words must be in positive logic before conversion to hexadecimal. Q1 is considered the least·
significant bit and Q8 the most signific~nt bit. For addresses, AO is least significant bit and A 11 is the most significant.
(I)
Q)
CJ
'S;
Q)
c
:?!
oc:
The input media containing the programming data can be in the form of cards or EPROMs.
Either 16K, 32K, or 64K EPROMs can be used or any combination of them.
The following is a description of how the cards must be formatted, should they be used instead of EPROMs.
INPUT CARD FORMAT
Each code deck submitted by customer shall consist of the following:
1.
2.
3.
4.
Title Card
Comment Cards
Start of Data Card
Data Cards
The cards shall be standard 80 column cards with the information in the following format:
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-23
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
TITLE CARD
Card Column
1-5
6
7,8
9-14
15
16-30
Information
The word 'TITLE' shall be punched in these columns.
Blank
The letters 'ZA' shall be punched in these columns.
Leave blank. A special device code number will be assigned by Texas Instruments.
(left justified)
,
Blank
Customer's Part Number, if required. (left justified)
31
Blank
32
Customer's Part Number to be included as part of device symbolization.
Options:
Y = Yes
N
33-36
37
~
o
s:
Blank
Logic Level for device pin 20.
Options:
1 = chip select mode, outputs enabled with high level.
o = chip select mode, outputs enabled with low level.
42
Logic Level for device pin 21.
Options:
1 = chip select mode, outputs enabled with high level.
o = chip select mode, outputs enabled with low level.
43
Blank.
c
-
CD
(I)
44
45-49
7-24
Type of Package
Options:
B = chip on board
P = plastic
38-40
41
CD
<
,;,
~o
Blank
Blank.
Texas Instruments Device Series (4964, etc.)
(left justified)
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS4964
8192·WORD BY 8·BIT READ·ONLY MEMORY
COMMENT CARDS
Any number of comment cards may be used for specifying the customer's name, individual to contact, telephone number,
address, any special instructions, etc. The format for these cards is as follows: The letter 'c' (for comment) must be punched in column 1, columns 2-4 must be blank, and comments can be punched in columns 5-80.
START OF DATA CARD
This card is to identify that the next card will be the beginning of customer's code. Format is as follows: Columns 1-4 must
have '&ROM' punched in them. The remainder of card is blank.
DATA CARDS
There will be 256 data cards supplied for each customer code. Each card will contain (in hexadecimal) the data for 32 memory
locations. Each data card shall be in the following format:
Information
Card Column
1-4
5,6
7-70
71,72
Hexadecimal address of first word on the card, four bits in length.
Blank.
Data. Each 8-bit data byte is represented by two ASCII characters to represent a
hexadecimal value of '00' to 'FF'.
Checksum. The checksum is the negative of the sum of all a-bit bytes in the record
from columns 1 to 70, evaluate modulo 256 (carry from high order bit ignored). For
purposes of calculating the checksum, the value of columns 5 and-6 are defined to
be zero. Adding together, modulo 256, all a-bit bytes from columns 1 to 70 (columns 5 and 6 = 0), then adding the checksum, results in zero.
73-76
Blank.
77-80
Card sequence number, in decimal.
(right justified).
en
(1)
CJ
'S;
(1)
C
~
oa:
Texas Instruments reserves the right to make changes at any tima in order to improve design and to supply the best product possible.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
7-25
:::0
o
3:
c
CD
<
n'
CD
en
7-26
MOS
LSI
TMS47128
16,384·WORD BY 8·BIT READ·ONLY MEMORY
JUNE 1983
•
16,384 X 8 Organization
•
Fully Static (No Clocks, No Refresh)
•
All Inputs and Outputs TTL Compatible
•
Single 5-V Power Supply
•
Optional Power Down or Chip Select
•
64K Bank Select Option
A4
A11
•
Maximum Access Time from Address or
Power Down:
A3
A2
51/51
A10
TMS47128-25
TMS47128-35
TMS47128-45
A1
AO
Q1
E/E/S3/s3
QS
Q7
Q2
Q6
Q3
Q5
Q4
•
•
TMS47128 " .. JL OR NL PACKAGEt
STANDARD ROM
ITOPVIEW)
NC
A12
VCC
52/52
A7
A13
A6
AS
A9
A5
250 ns
350 ns
450 ns
Worst Case Active Power Dissipation
... 330 mW
Vss
Worst Case Standby Power Dissipation
... 66mW
t The package for the bank select ROM is shown on page 2.
description
The TMS47128 is a 131 ,072-bit read-only memory
organized as 16,384 words of 8-bit length. This makes
the TMS47128 ideal for microprocessor based
systems. The device is fabricated using N-channel
silicon-gate technology for high speed and simple interface with bipolar circuits.
There are two versions of the TMS47128: the standard ROM with options on chip selects and power
down, and the bank select ROM with similar options.
The operation section of this data sheet describes both
versions.
PIN NOMENCLATURE
U)
Q)
t)
STANDARD ROM
AO-A13
E/E/S3/s3
Addresses
Chip Enable/Power Down or Chip Select
NC
Q1-QS
No Connection
51/51,52/52
Chip Selects
'S;
Q)
C
~
Data Out
VCC
+5-V Supply
Vss
Ground
0
a:
The TMS47128 is fully compatible with Series 74, 74S, or 74LS TTL. The data outputs are three-state for OR-tieing
multiple devices on a common bus. Pins 20, 22, and 27 are mask-programmable, providing additional system flexibility. The data is always available, it is not dependent on external clocking of pins 20, 22, or 27.
The TMS47128 is designed for high-density fixed-memory applications such as logic function generation and
microprogramming. It is pin compatible with Tl's full line of ROMs and EPROMs.
This ROM is supplied in 28-pin dual-in-line plastic (NL suffix) or ceramic (JL suffix) packages designed for insertion
to 70 0
in mounting-hole rows on 600 mil centers. The device is designed for operation from
ooe
e.
operation, standard ROM
address (AO-A 13)
The address-valid interval determines the device cycle time. The 14-bit positive-logic address is decoded on-chip to
select one of 16,384 words of 8-bit length in the memory array. AO is the least-significant bit and A 13 the mostsignificant bit of the word address.
chip select (S1 or S1 and S2 or S2)
Pins 22 and 27 can be programmed during mask fabrication to be active with either a high- or a low-level input. When
PRODUCT PREVIEW
This document contains Information on I product under
development. Texas Instruments re •• .ves the right to
change or discontinue thi' product without notice.
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
1'-27
TMS47128
16,384-WORD BY 8-BIT READ-ONLY MEMORY
the signals on pins 20, 22, and 27 are active, all eight outputs are enabled; and the eight-bit addressed word can
be read. When any of the signals on pins 20, 22, and 27 are not active, all eight outputs are in a high-impedance state.
power down (E orE) or chip select (S3 or 83)
Pin 20 can be programmed during mask fabrication to be a chip-enable/power-down pin (E or E) or a third chip-select
pin (S3 or 53). Each option can be active-high or active-low. When the chip-enable/power-down pin is inactive, the
chip is put into the standby mode. This reduces ICC1, which in the active state is 60 mA, to a standby ICC2 of 12
mAo With the chip-select option, pin 20 is functionally identical to pins 22 and 27.
data out (01-08)
The eight outputs must be enabled by pins 20, 22, and 27 before the output word can be read. Data will remain valid
until the address is changed or the outputs are disabled (chip deselected). When disabled, the three-state outputs
are in a high-impedance state. 01 is considered the least-significant bit, 08 the most-significant bit.
operation, bank select ROM option
::0
o
s:
c
CD
<
es"
CD
en
•
Pins 26 (SB1 or SB1) and 1 (SB2 or SB2) can be programmed during mask fabrication to select either of
two 64K banks. When this option is selected, AO
through A 12 address an 8K x 8 word bank. The bank
select pins can be either active high or active low with
SB1 selecting bank 1 and SB2 selecting bank 2. Bank
one represents the least-significant 64K bank and
bank two represents the most-significant bank. All
bank select pins in the inactive state or more than o,ne
bank select pin active will drive all outputs to the highimpedance state.
TMS47128 .•. JL OR NL PACKAGE
BANK SELECT ROM
(TOP VIEWI
SB2/SB2
The chip-select and power-down options previously
described for the standard ROM apply equally to the
bank select ROM version .
Bank select input level specifications are identical to
the input level specifications of the standard ROM.
A12
A7
581/SBl
A6
A5
A8
A9
A4
All
A3
51/S1
A2
Al0
Al
E/E/S3/S3
AO
01
08
02
03
06
05
VSS
04
PIN NOMENCLATURE
BANK SELECT ROM
AO-A12
E/E/S3/S3
Addresses.
Chip EnablelPower Down or Chip Select
01-08
Data Out
51/S1,52/S2
Chip Selects
581/SB1,
Bank Selects
592/SB2
7-28
VCC
+5-V Supply
VSS
Ground
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
VCC
52/S2
Q7
TMS47128
16,384·WORD BY 8·BIT READ·ONLY MEMORY
logic symbols t
STANDARD ROMS
AO
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
E
51
S2
(10)
ROM
16.384 X 8
0 ....
AO
(9)
A1
(8)
(7)
A\j
(6)
A\j
(5)
A\j
(4)
~
(3)
0
A 16.383
(25)
A\j
(21)
A\j
(23)
(12)
(13)
(15)
(16)
(17)
(18)
(19)
A2
01
A3
02
A4
03
A5
04
A6
05
A7
06
A8
07
A9
08
A10
A11
(2)
A12
(26)
13..-
(20)
(27)
A\j
A\j
(24)
(22)
A\j
(11 )
A13
(10)
0"
(9)
ROM
16.384 X 8
(8)
(7)
A\j
(6)
A\j
(5)
A\j
(4)
0
~ A 16.383
(3)
(25)
A\j
A\j
A\j
(24)
A\J
(21)
A\j
(23)
(11 )
(12)
(13)
(15)
(16)
(17)
(18)
(19)
01
02
03
04
05
06
07
08
(2)
(26)
13...
[PWR OWN]
k:. ~
.......
r......
S1
EN
S2
S3
(22)
(27)
I-&
(20)
EN
Pins 20. 22 and 27 can be active-low as shown in the symbol on the left or active-high as shown in the symbol on the
right. In addition. pin 20 can be either a third chip select (S3 or 83) or a chip enable/power down IE or E).
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10-1.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
7-29
TMS47128
16,384-WORD BY 8-BIT READ-ONt Y MEMORY
functional block diagrams
STANDARD ROM
4--
Vcc
. - - VSS
DATA OUTPUTS
Ql-Q8
CHIP SELECT/POWER DOWN LOGIC
E/E/S3/S3
X
ADDRESS
BUFFER
:a
o
s:
c
CD
BANK SELECT ROM
<
C;"
CD
en
CHIP SELECT/POWER DOWN LOGIC
7-30
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
4-o-Vcc
4-o-Vss
TMS47128
16,384-WORD BY 8-BIT READ-ONLY MEMORY
absolute maximum ratings
Supply voltage to ground potential (see Note 1) ..................................
-0.5 V to 7 V
Applied output voltage (see Note 1) .............................................
- 1 V to 7 V
Applied input voltage (see Note 1) ..............................................
- 1 V to 7 V
Power dissipation .............................................................. 500 mW
Operating free-air temperature ................................................. DoC to 70°C
Storage temperature .....................................................
- 55°C to 1 50°C
NOTE 1:
Voltage values are with respect to Vss.
recommended operating conditions
PARAMETER
MIN
NOM
MAX
Supply voltage, Vee
4.5
5
5.5
V
High-level input voltage, VIH
2
-1
Vee
0.8
V
0
70
Low-level input voltage, VIL
Operating free-air temperature, T A
electrical characteristics, T A
o°e
to 70 o e, VOO
TEST CONDITIONS
High·level output voltage
VOL
Low-level output voltage
II
Input current
10
Output leakage current
lee1
Supply current from Vee (active)
lee2
ei
Input capacitance
eo
Output capacitance
switching characteristics, T A
= 4.5 V,
Vee = 4.5 V,
Vee = 5.5 V,
Vo = 0.4 V to
Vee = 5.5 V,
Vee = 5.5 V
Vo = 0 V,
f = 1 MHz
Vo = 0 V,
Vee
Supply current from Vee (power down)
10H
IOL
Vee,
= -1
= 2.1
MIN
mA
Ov ~ VIN ~ 5.5 V
ehip deselected
=
VI
TA
Vee Output not loaded
=
MAX
2.4
mA
25°e,
TA = 25°C,
f = 1 MHz
ooe to 70 oe, Vee
V
°e
5 V ± 10% (unless otherwise noted)
PARAMETER
VOH
UNIT
UNIT
V
0.4
V
10
p.A
±10
p.A
60
mA
12
mA
6
pF
12
pF
I/)
Q)
CJ
'S;
Q)
C
~
aa:
5 V ± 10%, see figure 1 t
TMS47128-25
PARAMETER
MIN
MAX
TMS47128-35
TMS47128-45
MIN
MIN
MAX
MAX
ta(AD)
Access time from address
250
350
ta(S)
Access time from chip select
120
120
120
ta(PD)
Access time from power down/chip enable
250
350
450
450
tv(A)
Output data valid after address change
tdis
Output disable time from chip select/chip enable
ten(S)
Output enable time from chip select
10
10
10
ten(E)
Output enable time from chip enable
10
10
10
10
10
100
UNIT
10
100
ns
100
t All AC measurements are made at 10% and 90% points.
34
TEXAS
INsrRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
7-31
TMS47128
16,384-WORD BY 8-BIT READ-ONLY MEMORY
64K bank decode switching characteristics t
TMS47128-25
PARAMETER
ta(SB)
ten(SB)
MIN
Access time from bank select
Output enable time from bank select
MAX
TMS47128-35
MIN
250
10
TMS47128-45
MIN
350
10
100
tdis(SB) Output disable time from bank select
MAX
MAX
UNIT
450
10
100
ns
100
t Previously defined switching characteristics remain unchanged.
PARAMETER MEASUREMENT INFORMATION
v
= 1.755 V
-Jr
RL = 6450
OUTPUT
UNDER
TEST
CL = 100 pF
:ll
o
FIGURE 1 - LOAD CIRCUIT
3:
c
CD
<
n'
CD
(I)
read cycle timing
A~A13
-------------------....,x
.
-----VIH--I_\_____ If
::
VIL
!
I
tv(A)~
r-
~:
L
l----t r
~ta(S)
Q1-QB :,: _ _ _ _: - t ' I A O ) G (
---..f
VAUO
tdis
__
~ten(S)
18·
7-32
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS47128
16,384·WORD BY 8·BIT READ·ONLY MEMORY
standby mode
vlH
AO-A13
ADDRESS N
__________________________
. VIL
If.....
VIH
E
VIL
tdis
VIL
,
11
ACTIVE
STANDBY
\
I•--·~I
VIH
01-08
~~~----------A-D-D-RE-S-S-N--+-m---------
VALID
______
---------------------------,. .1
ta(PD)
---f}--H+-~~+-----V-A-LlD---J.--.J-.
t en(E)
64K bank select mode read cycle timing
en
Q)
AG-A12
581'582
~: _1'---------------------------------1~'"-----I
rtV(A)---,
VIH-\!
VIL
I
I
~ ta(SB)
I
t di S (SB)---1
I
~ta(AD)
--------HI-Z
I
I
01-08
l
(.)
':;
Q)
C
~
oa::
l.I
VALID
.---.t1- ten(SB)
14
• 1
14
TEXAS
7-33
INSTRUMEN
POST OFFICE BOX 225012 • DALLAS,
EXAS 75265
TMS47128
16,384-WORD BY 8-BIT READ-ONLY MEMORY
PROGRAMMING DATA
PROGRAMMING REQUIREMENTS: The TMS4 7128 is a fixed program memory in which the programming is performed by
TI at the factory during the manufacturing cycle to the specific customer inputs supplied in the format below. The device
is organized as 16,384 8-bit words with address locations numbered 0 to 16,383. The 8-bit words can be coded as a 2-digit
hexadecimal number between 00 and FF. All data words and addresses in the following format are coded in hexadecimal
numbers. In coding all binary words must be in positive logic before conversion to hexadecimal. Q1 is considered the least
significant bit and Q8 the most significant bit. For addresses, AO is least significant bit and A 13 is the most significant.
The input media containing the programming data can be in the form of EPROMs, cards, or data formatted in card images
(contact TI for details).
Either 16K, 32K, or 64K EPROMs can be used or any combination of them.
The following is a description of how the cards/card images must be formatted, should they be used instead of EPROMs.
INPUT CARD FORMAT
Each code deck submitted by
1:
2.
3.
4.
:a
o
custome~ shall consist of the following:
Title Card
Comment Cards
Start of Data Card
Data Cards
The cards shall be standard 80 column cards with the information in 'the following format:
s:
C
CD
<
C:;'
TITLE CARD
Card Column
Information
- 5
The word 'TITLE' shall be punched in these columns.
6
Blank.
CD
•
en
7,8
The letters 'ZA' shall be punched in these columns.
9 - 15
16.
17 -
30
ZA Number.
Blank.
Customer's Part Number, if required
(left justifed)
31
Blank.
32
Customer's Part Number to be included as part of device symbolization.
Options:
V = Ves
N = No
33
Blank.
34 - 35
28
36
Blank.
37
Type of Package
Options:
C = ceramic
P = plastic
18
7-34
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS47128
16,384-WORD BY 8-BIT READ-ONLY MEMORY
38
Blank.
39
Customer defined option for device mode pin 20
Options:
P = power down
C = chip select
40
Customer defined option for device mode
Options:
S = standard ROM
B = bank select ROM
41
Logic level for pin 20
Options:
1 = power down or chip select high
o = power down or chip select low
42
Logic level for pin 22
Options:
1 = chip select enable high
o = chip select enable low
43
Logic level for pin 27
Options:
1 = bank select enable high
o = bank select enable low
44
45
46
47 - 52
rn
(1)
(.)
-S;
Logic level for pin 26 bank select (1) mode
Options:
Blank = standard ROM no bank select (A 13)
1 = bank select enable high
o = bank select enable low
(1)
c
~
oa:
Logic level for pin 1 bank select (2) mode
Options:
Blank = standard ROM no bank select (NC)
1 = bank select enable high
o = bank select enable low
Pin 1 selects high order addresses.
Blank.
Texas Instruments Device Series (i.e., 47256, 47128)
lIeft justified)
COMMENT CARDS
Any number of comment cards may be used for specifying the customer's name, individual to contact, telephone number,
address, any special instructions, etc. The format for these cards is as follows: The letter 'C' (for comment) must be punched in column 1, columns 2 - 4 must be blank, and comments can be punched in columns 5 - 80.
START OF DATA CARD
This card is to identify that the next card will be the beginning of customer's code. Format is as follows; Columns 1 -4
must have '&ROM' punched in them. The remainder of card is blank.
84
.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-35
TMS47128
16,384·WORD BY 8·BIT READ·ONLY MEMORY
DATA CARDS
There will be 512 data cards supplied for each customer code. Each card will contain (in hexadecimal) the data for 32 memory
locations. Each data card shall be in the following format:
Card Column
1 - 4
5,6
Information
Hexadecimal address of first word on the card, four bits in length.
Blank.
7 - 70
Data. Each 8-bit data byte is represented by two ASCII characters to represent a hexadecimal value of '00' to 'FF'.
71,72
Checksum. The checksum is the negative of the sum of all 8-bit bytes in the record from
columns 1 to 70, evaluate modulo 256 (carry from high order bit ignored). For purposes
of calculating the checksum, the value of columns 5 and 6 are defined to be zero. Adding
together, modulo 256, all 8-bit bytes from column 1 to 70 (columns 5 and 6 = 0), then
adding the checksum, results in zero.
73 - 76
Blank.
77 - 80
Card sequence number, in decimal (right justified).
:xJ
o
3:
c
CD
<
ri'
CD
•
(I)
Texas Instruments reserves the right to. make changes at any time in order to improve design and to supply the best product possible.
1S
7-36
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
MOS
LSI
TMS47256
32.768·WORD BY 8·BIT READ·ONLY MEMORY
JUNE 1983
TMS47256 ••• JL OR NL PACKAGE t
•
32,768 X 8 Organization
•
Fully Static (No clocks, No Refresh)
•
All Inputs and Outputs TTL Compatible
•
Single 5·V Power Supply
•
Optional Power Down or Chip Select
2
A7
3
A6 r4
•
64K Bank Select Option
A5
•
Maximum Access Time from Address or
Power Down:
TMS47256-25
TMS47256-35
TMS47256-45
STANDARD ROM
(TOP VIEWI
NC
A12
A4
A3
A2
Worst Case Active Power
Dissipation .•. 330 mW
•
Worst Case Standby Power
Dissipation ... 66 mW
VCC
A14
26
25
24
23
A13
5
6
~7
22
21
8
Al ;;;9
250 ns
350 ns
450 ns
•
1 U28
27
AO
Ql
VSS [14
All
Sl/Sl
Al0
20t:: E/E/S2/S2
19
Q8
18
Q7
10
11
Q2 =12
13
Q3
A8
A9
17~
Q6
16
Q5
15J Q4
t The package for the bank select ROM is shown on page 2.
description
The TMS47256 is a 262, 144-bit read-only memory
organized as 32,768 words of 8-bit length. This makes
the TMS47256 ideal for microprocessor based
systems. The device is fabricated using N-channel
silicon-gate technology for high speed and simple interface with bipolar circuits.
There are two versions of the TMS47256: the standard ROM with options on chip selects and power
down, and the bank select ROM with similar options.
The operation section of this data sheet describes both
versions.
PIN NOMENCLATURE
en
Q)
STANDARD ROM
AO-A14
E/E/52/S2
NC
CJ
Addresses
Chip Enable/Power Down or Chip Select
'S;
C
0l-Q8
No Connection
Data Out
51/51
Chip Select
0
VCC
+5-V Supply
VSS
Ground
Q)
~
a:
The TMS47256 is fully compatible with Series 74, 74S, or 74LS TTL. The data outputs are three-state for OR-tieing
multiple devices on a common bus. Pins 20 and 22 are mask-programmable, providing additional system flexibility.
The data is always available, it is not dependent on external clocking of pins 20 and 22.
The TMS47256 is designed for high-density fixed-memory applications such as logic function generation and
microprogramming. It is pin compatible with TI's full line of ROMs and EPROMs.
This ROM is supplied in 28-pin dual-in-line plastic (NL suffix) or ceramic. (JL suffix) packages designed for insertion
in mounting-hole rows on 600 mil centers. The device is designed for operation from O°C to 70 0 C.
operation, standard ROM
address (AO-A 14)
The address-valid interval determines the device cycle time. The 15-bit positive-logic address is decoded on-chip to
select one of 32,768 words of 8-bit length in the memory array. AO is the least-significant bit and A 14 the mostsignificant bit of the word address.
chip select (S1 or 51)
Pin 22 can be programmed during mask fabrication to be active with either a high- or low-level input. When the signal
14
Copyright © 1983 by Texas Instruments Incorporated
PRODUCT PREVIEW
This document contains information on 8 product under
development. Texas Instruments reserves the right to
change or discontinue this product without notice.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
7-37
TMS47256
32,768·WORD BY 8·BIT READ·ONLY MEMORY
on both pins 22 and 20 are active, all eight outputs are enabled; and the eight-bit addressed word can be read. When
the signal on either pin 22 or 20 is not active, all eight outputs are in a high-impedance state.
power down
IE or E) or chip select (82 or 82)
Pin 20 can be programmed during mask fabrication to be a chip-enable/power-down pin (E or E) or a secondary chipselect pin (82 or S2). Each option can be active-high or active-low. When the chip-enable/power-down pin is inactive,
the chip is put into the standby mode. This reduces ICC1, which in the active state is 60 mA, to a standby ICC2
of 12 mAo With the chip-select option, pin 20 is functionally identical to pin 22.
data out (Q1-Q8)
The eight outputs must be enabled by pins 20 and 22 before the output word can be read. Data will remain valid
until the address is changed or the outputs are disabled (chip deselected). When disabled, the three-state outputs
are in a high-impedance state. Q1 is considered the least-significant bit, Q8 the most-significant bit.
operation, bank select ROM option
:D
o
s:
c
CD
<
..
rio
CD
CIl
Pins 26 (SB1 or SB1), 1 (882 or SB2), 27 (SB3 or
SB3), and 22 (584 or SB4) can be programmed during mask fabrication to select anyone of four 64K
banks. When this option is selected, AO through A 12
address an 8K x 8 word bank. The bank select pins
can be either active high or active low with SB1, SB2,
SB3, and SB4 selecting banks one, two, three, and
four, respectively. Bank one represents the leastsignificant 64K bank and bank four represents the
most-significant bank. All bank select pins in the inactive state or more than one bank select pin active
will drive all outputs to the high-impedance state.
TMS47256 ... JL OR NL PACKAGE
BANK SELECT ROM
(TOP VIEW)
582/S82
The chip-select and power-down options previously
described for the standard ROM differ only slightly for
the bank select ROM version; the only difference being that there are two possible chip selects for the
standard ROM while only one chip select is available
for the bank select ROM. Data out functions the same
for both versions.
1 U28
A12
2
A7
3
A6 =4
A5
5
A4 6
A3 r7
Q2
8
9
10
11
;;;12
Q3
13
A2
Al
AO
Ql
VSS [14
27
26
VCC
583/S83
Sal/SBl
25
24
23
A8
A9
22
21
20
SB4/SB4
Al0
All
19
E/E/S/S
Q8
18
Q7
17
Q6
16t: Q5
15 Q4
Bank select input level specifications are identical to
the input level specifications of the standard ROM.
PIN NOMENCLATURE
BANK SELECT ROM
AO-A12
E/E/S/S
Addresses
Chip Enable/Power Down or Chip Select
Ql-Q8
Data Out
Bank Selects
SBl/SB1,
582/SB2,
583/SB3,
584/SB4
VCC
+ 5-V Supply
VSS
Ground
18
7-38
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS47256
32.768·WORD BY 8·BIT READ·ONLY MEMORY
logic symbols t
AO
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
E
(10)
STANDARD ROMS
ROM
0'" 32.768 X 8
AO
(9)
A1
(8)
A2
(7)
A3
(6)
(11 )
(5)
A'l
(12)
(4)
A'l
(3)
(25)
o
A'l
>A-32.767 A'l
(24)
A'l
(15)
(16)
(21)
A'l
(23)
A'l
(2)
A'l
(26)
(17)
(18)
(19)
A5
02
A6
03
A7
04
A8
05
06
07
08
A9
A10
A11
A12
A13
(27)
14
(20)
(22)
(13)
A4
01
b,.....,
A14
S2
[PWR OWN]
S1
ROM
0" 32.768 X 8
(10)
(9)
(8)
(7)
(11 )
(6)
A'l
(5)
A'l
(4)
A'l
(3)
0
>A32.767
(25)
A'l
A'l
(24)
A'l
(21)
A'l
(23)
A'l
(2)
(12)
(13)
(15)
(16)
(17)
(18)
(19)
01
02
03
04
05
06
07
08
(26)
(27)
(20)
~
(22)
& lEN
MEN
en
Q)
(.)
·S
Q)
Pins 20 and 22 can be active-low as shown in the symbol ,on the left or active-high as shown ~n the symbol on the right.
In addition. pin 20 can be either a secondary chip select (82 or 52) or a chip enable/power down (E or 'EL
tThis symbol is in accordance with IEEE Std 911ANSI Y32.14 and recent decisions by IEEE and lEe. See explanation on page 10-1.
Q
~
oa:
4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-39
TMS47256
32,768-WORD BY 8-BIT READ-ONLY MEMORY
functional block diagrams
STANDARD ROM
4 - - Vcc
+-vss
DATA OUTPUTS
Q1-Q8
BANK SELECT ROM
..
4 - - Vcc
4 - - V SS
DATA OUTPUTS
Q1-Q8
H
7-40
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS47256
32,768·WORD BY 8·BIT READ·ONLY MEMORY
absolute maximum ratings
Supply voltage to ground potential (see Note ·1) ..................................
- 0.5 V to 7 V
Applied output voltage (see Note 1) .............................................
- 1 V to 7 V
Applied input voltage (see Note 1) ..............................................
- 1 V to 7 V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Operating free-air temperature ................................................. OOC to 70°C
Storage temperature .....................................................
- 55°C to 150°C
NOTE 1:
Voltage values are with respect to
vss.
recommended operating conditions
PARAMETER
MIN
NOM
MAX
4.5
5
5.5
V
V
Supply voltage. VCC
High-level input voltage. VIH
2
Low-level input voltage. VIL
-1
VCC
0.8
0
70
Operating free-air temperature. T A
electrical characteristics, TA
o°C to 70°C,
VOO
TEST CONDITIONS
VOH
High-level output voltage
Vee
4.5 V.
IOH
VOL
II
Low-level output voltage
Input current
VCC
4.5 V.
Vee 5.5 V.
10L
Ov
10
Output leakage current
ICC1
Supply current from VCC (active)
ICC2
Supply current from VCC (power down)
Ci
Input capacitance
Co
Output capacitance
= 0.4 V to
= 5.5 V.
VCC = 5.5 V
Vo = 0 V.
f = 1 MHz
Vo = 0 V.
f = 1 MHz
Vo
V
°C
5 V ±. 10% (unless otherwise noted)
PARAMETER
=
=
UNIT
Vcc.
VIN
:$
:$
=
5.5 V
VCC Output not loaded
TA
=
25°C.
TA
=
25°C.
MAX
2.4
Chip deselected
VI
VCC
MIN
= -1 rnA
= 2.1 rnA
UNIT
V
0.4
V
10
p.A
en
Q)
(J
'S;
±10
p.A
60
rnA
Q
12
rnA
6
pF
:2E
oa:
12
pF
Q)
5 V ± 10%, see figure 1 t
switching characteristics, T A
PARAMETER
TMS47256-25
MIN
MAX
TMS47256-35
TMS47256-45
MIN
MIN
250
MAX
350
MAX
Access time from address
ta(S)
Access time from chip select
120
120
120
ta(PD)
Access time from power down/chip enable
250
350
450
tvtA)
Output data valid after address change
tdis
Output disable time from chip select/chip enable
10
10
100
UNIT
450
ta(AD)
10
100
ns
100
tentS)
Output enable time from chip select
10
10
10
ten(E)
Output enable time from chip enable
10
10
10
tAli AC measurements are made at 10% and 90% points.
34
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
7-41
TMS47256
32,768-WORD BY 8-BIT READ-ONLY MEMORY
64K bank decode switching characteristics t
PARAMETER
TMS47256-25
TMS47256-35
TMS47256-45
MIN
MIN
MIN
MAX
250
ta(SB)
Access time from bank select
ten(SB)
Output enable time from bank select
tdis(SB)
Output disable time from bank select
10
MAX
350
10
100
MAX
UNIT
450
10
100
ns
100
t Previously defined switching characteristics remain unchanged.
PARAMETER MEASUREMENT INFORMATION
V=1.755V
OUTPUT-lRL = 645 n
UNDER
TEST
CL = 100 pF
r
FIGURE 1 - LOAD CIRCUIT
:xl
o
~
c
n-
CD
<
CD
en
. . read cycle timing
___________________
~~~_______
!
r-
A~M3::~
tv(A)~
-~\-
VIH---,
VIL
0,08
~::
I
_____
----.-:--,;f
_______
,J.---4-t a (S)
:-',IADI~
--.f
l---..f
VALID
L
r-tdis
__
j..-ten(S)
11
7-42
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS47256
32,768-WORD BY 8-BIT READ-ONLY MEMORY
standby mode
VIH
AO-A13
__
~
ADDRESS N
______________________
J~~
__________A_D_D_RE_S_S_N__
+_m_________
VIL
I
VIH
E
VIL
"
tdis
VIH
Q1-Q8
\1---------------------------1
STANDBY
I.
-f4-....-t·1
ACTIVE
I..
.1
ta(PD)
VALID
_ _ _ _ _- - - f } - H I . Z h
..............-_
(
_
'V_AL_ID_ __
VIL
j..-..I..-
ten(E)
64K bank select mode read cycle timing
(/)
Q)
(J
':;
Q)
C
~
oa:
4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
7-43
TMS47256
32,768·WORD BY 8·BIT READ·ONLY MEMORY
PROGRAMMING DATA
PROGRAMMING REQUIREMENTS: The TMS47256 is a fixed program memory in which the programming is performed by
TI at the factory during the manufacturing cycle to the specific customer inputs supplied in the format below. The device
is organized as 16,384 8-bit words with address locations numbered 0 to 32,767. The 8-bit words can be coded as a 2-digit
hexadecimal number between 00 and FF. All data words and addresses in the following format are coded in hexadecimal
numbers. In coding all binary words must be in positive logic before conversion to hexadecimal. Q1 is considered the least
significant bit and Q8 the most significant bit. For addresses, AO is least significant bit and A 14 is the most significant.
The input media containing the programming data can be in the form of EPROMs, cards, or data formatted in card images
(contact TI for details).
Either 16K, 32K, or 64K EPROMs can be used or any combination of them.
The following is a description of how the cards/card images must be formatted, should they be used instead of EPROMs.
INPUT CARD FORMAT
Each code deck submitted by customer shall consist of the following:
1.
2.
3.
4.
II
o
s:
Title Card
Comment Cards
Start of Data Card
Data Cards
The cards shall be standard 80 column cards with the information in the following format:
c
CD
<
rr
CD
en
TITLE CARD
- 5
The word 'TITLE' shall be punched in these columns.
6
Blank.
7, 8
9 - 14
15
16 - 30
The letters 'ZA' shall be punched in these columns.
ZA Number.
Blank.
Customer's Part Number, if required
(left justifed)
31
Blank.
32
Customer's Part Number to be included as part of .device symbolization.
Options:
Y = Yes
N = No
33
Blank.
34 - 35
·36
37
7-44
Information
Card Column
28
Blank.
Type of Package
Options:
C = ceramic
P = plastic
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS47256
32,768-WORD BY 8-BIT READ-ONLY MEMORY
38
Blank.
39
Customer defined option for device mode pin 20
Options:
P = power down
C = chip select
40
Customer defined option for device mode
Options:
S
standard ROM
B = bank select ROM
41
Logic level for pin 20
Options:
1 = power down or chip select high
o = power down or chip select low
42
Logic level for pin
Options:
Blank = standard
1 = chip select
o = chip select
43
44
22 chip select or bank select (4) mode
ROM no bank select (chip select)
enable high or bank select enable high
enable low or bank select enable low
Logic level for pin 27 bank select (3) mode
Options:
Blank = standard ROM no bank select (A 14)
1 = bank select enable high
o = bank select enable low
'$
(1)
C
Logic level for pin 26 bank select (1) mode
Options:
Blank = standard ROM no bank select (A 13)
1 = bank select enable high
o = bank select enable low
45
Logic level for pin 1 bank select (2) mode
Options:
Blank = standard ROM no bank select (NC)
1 = bank select enable high
o = bank select enable low
Pin 1 selects high order addresses.
46
Blank.
47 - 52
t/)
(1)
(.)
~
o
a:
Texas Instruments Device (i.e., 47256, 47128)
(left justified)
COMMENT CARDS
Any number of comment cards may be used for specifying the customer's name, individual to contact, telephone number,
address, any special instructions, etc. The format for these cards is as follows: The letter 'C' (for comment) must be punched in column 1, columns 2 - 4 must be blank, and comments can be punched in columns 5 - 80.
START OF DATA CARD
This card is to identify that the next card will be the beginning of customer's code. Format is as follows; Columns 1 - 4
must have '&ROM' punched in them. The remainder of card is blank.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
7-45
TMS47256
32,76B-WORD BY B-BIT READ-ONLY MEMORY
DATA CARDS
There will be 1024 data cards supplied for each customer code. Each card will contain (in hexadecimal) the data for 32
memory locations. Each data card shall be in the following format:
Card Column
1 - 4
5, 6
Information
Hexadecimal address of first word on the card, four bits in length.
Blank.
7 - 70
Data. Each 8-bit data byte is represented by two ASCII characters to represent a hexadecimal value of '00' to 'FF'.
71,72
Checksum. The checksum is the negative of the sum of all 8-bit bytes in the record from
columns 1 to 70, evaluate modulo 256 (carry from high order bit ignored). For purposes
of calculating the checksum, the value of columns 5 and 6 are defined to be zero. Adding
together, modulo 256, all 8-bit bytes from column 1 to 70 (columns 5 and 6 = 0), then
adding the checksum, results in zero.
73 -
76
77 - 80
Blank.
Card sequence number, in decimal (right justified).
:zJ
o
3:
cCD
rr
CD
<
..
en
Texas Instruments reserves the right to make changes at any time In order to Improve design end to supply the best product possible.
7-46
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM ·Devices . .
ROM Devices·"
Static RAM and Memory Support Devices
Applications .Information . .
Logic Symbols
Mechanical Data
ATTENTION
These devices contain circuits to protect the inputs and outputs against damage
due to high static voltages or electrostatic fields; however, it is advised that
precautions be taken to avoid application of any voltage higher than maximumrated voltages to these high-impedance circuits.
Unused inputs must always be connected to an appropriate logic voltage level,
preferably either supply voltage or ground.
Additional information concerning the handling of ESD sensitive devices is
available from Texas Instruments in a document entitled "Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies."
•
Please contact
Texas Instruments
P.O. Box 401560
Dallas, Texas 75240
to obtain this brochure.
TMS2114, TMS2114L
1024·WORD BY 4·BIT STATIC RAMS
MOS
LSI
DECEMBER 1979 - REVISED AUGUST 1983
•
Previously Called TMS4045/TMS40L45
•
1024 X 4 Organization
•
Single
•
High Density300·mil (7.62 mm) 18·Pin
Package
•
+ 5·V
TMS2114. TMS2114L •.• NL PACKAGE
ITOPVIEWI
Supply
A6
AS
Fully Static Operation (No Clocks. No
Refresh, No Timing Strobe)
A4
AS
A3
A9
001
AD
•
4 Performance Ranges:
TMS2114-15,
TMS2114-20.
TMS2114-25,
TMS2114-45,
•
•
•
•
•
A1
A2
ACCESS READ OR WRITE
TIME
CYCLE
(MAX)
(MIN)
TMS2114L-15
150 ns
150 ns
TMS2114L-20
200 ns
200 ns
TMS2114L-25
250 ns
250 ns
TMS2114L-45
450 ns
450 ns
400-mV Guaranteed DC Noise Immunity
with Standard TTL Loads - No Pull-Up
Resistors Required
VCC
A7
S
VSS
002
003
004
W
oS;
G)
C
t:
o
c.
c.
::::s
tJ)
PIN NOMENCLATURE
Addresses
AO - A9
Common I/O Capability
3-State Outputs and Chip Select Control for
OR·Tie Capability
001 - 004
Data In/Data Out
S
Chip Select
VCC
+5-V Supply
Fan-Out to 2 Series 74. 1 Series 74S, or 8
Series 74LS TTL Loads
VSS
Ground
Write Enable
iN
Low Power Dissipation
TMS2114,
TMS2114L
U)
G)
CJ
~
o
E
G)
:e
"'C
C
as
~
~
MAX
(OPERATING)
550 mW
330 mW
a:
CJ
o~
as
~
tJ)
description
This series of static random-access memories is organized as 1024 words of 4 bits each. Static design results in reducing
overhead costs by elimination of refresh-clocking circuitry and by simplification of timing requirements. Because this
series is fully static, chip select may be tied low to further simplify system timing. Output data is always available
during a read cycle.
All inputs and outputs are fully compatible with Series 74, 74S or 74LS TTL. No pull-Up resistors are required. This
4K Static RAM series is manufactured using TI's reliable N-channel silicon-gate technology to optimize the costl
performance relationship.
The TMS2114/2114L series is offered in the 18-pin dual-in-line plastic (NL suffix) package designed for insertion in
mounting-hole rows on 300-mil (7.62 mm) centers. The series is guaranteed for operation from ooe to 70°C.
Copyright © 1983 by Texas Instruments Incorporated
84
TEXAS
INsrRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
8-1
TMS2114, TMS2114L
1024·WORD 8Y 4·81T STATIC RAMS
operation
addresses (AO - A9)
The ten address inputs select one of the 1024 4-bit words in the RAM. The address inputs must be stable for the
duration of a write cycle. The address inputs can be driven directly from standard Series 54/74 TTL with no external
pull-up resistors.
chip select
is)
The chip-select terminal, which can be driven directly from standard TTL circuits, affects the data-in and data-out
terminals. When chip select is at a logic low level, both terminals are enabled. When chip select is high, data-in is
inhibited and data-out is in the floating or high-impedance state.
write enable (W)
The read or write mode is selected through the write enable terminal. A logic high selects the read mode; a logic low
selects the write mode. W or S must be high when changing addresses to prevent erroneously writing data into a
memory location. The W input can be driven directly from standard TTL circuits.
data-in/data-out (001 - OQ4)
Data can be written into a selected device when the write enable input is low. The DO terminal can be driven directly
from standard TTL circuits. The three-state output buffer provides direct TTL compatibility with a fan-out of two Series
74 TTL gates, one Series 74S TIL gate, or eight Series 74LS TTL gates. The DQ terminals are in the high-impedance
state when chip select (S) is high or whenever a write operation is being performed. Data-out is the same polarity
as data-in.
c
CD
<
C:;"
CD
(I)
18,
8-2
TEXAS
IN STRUM ENlS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS2114, TMS2114L
1024·WDRD BY 4·BIT STATIC RAMS
logic symbol t
AO
A1
A2
A3
A4
A5
A6
A7
AS
A9
S
Vi
RAM 1024x4
(5)
o ..
(6)
(7)
(4)
(3)
0
>Ai023
(2)
FUNCTION TABLE
(1)
w
S
001 - DQ4
MODE
(17)
L
L
VALID DATA
WRITE
H
L
DATA OUTPUT
READ
U)
X
H
HI-Z
DEVICE DISABLED
(1)
(16)
(15)
(S)
-,....
(10)
G1
c
1EN [READ)
~
L:. ....,
o
c.
1C2 [WRITE)
001
(14)
(13)
k
r
C.
::l
A,2D
(/)
A,Z3
~
\73
o
002
003
004
(,)
'S
(1)
9,
(12)
tThis symbol is in accordance with IEEE Std 91/ANSI Y32.14 and
recent decisions by IEEE and lEe. See explanation on page 10-1.
(11)
E
(1)
~
"'C
C
m
~
absolute maximum ratings over operating free·air temperature (unless otherwise noted) t
Supply voltage, VCC (see Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. -0.5 V to 7 V
Input voltage (any input) (see Note 1) ............................................. - 1 V to 7 V
Continuous power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1 W
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ooC to 70°C
Storage temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55°C to 150°C
cd:
a:
(,)
'';:;
...
m
(/)
t Stresses beyond those listed under" Absolute Maximum Rating" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to the ground material.
recommended operating conditions
TMS2114
TMS2114L
PARAMETER
Supply voltage, VCC
Supply voltage, VSS
High-level input voltage, VIH
Low-level input voltage, VIL (see Note 2)
Operating free-air temperature, T A
NOTE 2:
UNIT
MIN
NOM
MAX
4.5
5
0
5.5
V
V
V
2
5.5
-1
O.B
V
0
70
°c
The algebraic convention, where the more negative (less positive) limit is designated as minium, is used in this data sheet for logic voltage levels only.
84
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-3
TMS2114, TMS2114L
1024-WORD BY 4-BIT STATIC RAMS
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
TEST CONDITIONSt
PARAMETER
MIN TYP*
VOH
High-level voltage
IOH = -1 rnA
Vee = MIN (operating)
VOL
Low-level voltage
IOL = 3.2 rnA
Vee = MIN (operating)
II
Input current
VI- 0 V to MAX
10Z
Off-state output current
lee
ei
eo
Supply current from Vee
Input capacitance
Output capacitance
Sat 2 Vor
lo=OmA,
TA = oOe (worst case)
a V,
I
I
TMS 2114
TMS2114L
I
I
UNIT
V
Vo = 0 V to MAX
WatO.8 V
VI =
MAX
2.4
0.4
V
10
IJA
±10
IJA
Vee = MAX
90
100
Vee = MAX
50
60
f= 1 MHz
Vo = 0 V,
f = 1 MHz
rnA
8
pF
8
pF
t For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions.
* All typical values are at VCC = 5 V, T A = 25° C.
timing requirements over recommended supply voltage range, T A
=0 °C to
70 o C, 1 Series 74 TTL load,
Cl=100 pF
PARAMETER
TMS2114-15
TMS2114-20
TMS2114-25
TMS2114-45
TMS2114L-15
TMS2114L-20
TMS2114L-25
TMS2114L-45
MIN
MIN
MIN
MIN
MAX
MAX
MAX
UNIT
MAX
tc(rd)
Read cycle time
150
200
250
450
ns
tc(wr)
Write cycle time
150
200
250
450
ns
tw(W)
Write pulse width
80
100
100
200
ns
tsu(A)
Address set up time
0
0
0
0
ns
tsu(S)
ehip select set up time
80
100
100
200
ns
tsu(D)
Data set up time
80
100
100
200
ns
th(D)
Data hold time
0
0
0
0
ns
th(A)
Address hold time
0
0
0
20
ns
184
8-4
TEXAS
. INsrRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS2114. TMS2114L
1024·WORD BV 4·BIT STATIC RAMS
switching characteristics over re~ommended voltage range, T A == O°C to 70°C, 1 Series 74 TTL
load, CL == 100 pF
PARAMETER
TMS2114-15
TMS2114-20
TMS2114-25
TMS2114-45
TMS2114L-15
TMS2114L-20
TMS2114L-25
TMS2114L-45
MIN
MIN
MIN
MIN
MAX
Access time from address
talA)
Access time from chip select
tatS)
(or output enable) low
ta(W)
Access time from write enable high
tv(A)
Output data valid after address change
tdis(W)
250
70
85
70
85
(or output enable) high
MAX
450
ns
100
120
ns
100
120
ns
20
20
Output disable time after write enable low
MAX
200
20
Output disable time after chip select
tdis(S)
MAX
150
UNIT
20
ns
50
60
60
100
ns
50
60
60
100
ns
read cycle timing t
~
VIH
XI
ADDRESS. A
VIL
VIH
CHIP SELECT.
5
VIL
VIH
OUTPUT DATA. Q
~
tc(rd)
~
ADDRESS VALID
-c
I
t
o
c.
I J~~;'{SJ
\
~"{S{
tV(AIH
II-HI-Z-
HI-Z---{
VIL
ta(A)--t>I
C.
::::J
CJ)
..>
o
E
Q)
2
"C
E:
(Q
All timing reference points are 0.8 V and 2.0 V onlnputs and 0.6 V and 2.2 Von outputs (90% points). Input rise and fall times equal 10 nanoseconds.
tWrite enable is high for a read cycle.
~
c:(
a:
early write cycle timing
ADDRESS. A
~----------------------tc(wrl
.....----------------------~~
VIH~~~~ ~~----------------------------------------------,
ADDRESS VALID
VIL~~~Y ~~--------------------------------------------~
tq------irl'..... t su (A)
VIH
WRITE ENABLE. W
----------!I..
VIH
CHIP SELECT. S
VIL
INPUT DATA. D
VOH
OUTPUT. Q VOL - - - - - - - - - - - - - - - - - H I - Z
84
TEXAS
.
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-5
TMS2114, TMS2114L
1024-WORD BY 4-81T STATIC RAMS
read-write cycle timing
VIH
ADDRESS. A
VIL
---xr----------...x"---f.tsu(A)
VIH
WRITE ENABLE. W
VIL
I
-toI
th(A)
\
i
---~I---''t
I
VIL
I
I
VIH
I
..
Ije---
~tW(W)~
VIH
CHIP SELECT. S
j4
""'S'-.,
INPUT DATA. D
VIL
VOH
OUTPUT.
a
VOL
TYPICAL APPLICATION DATA
III
Early write cycle avoids DQ conflicts by controlling the write time with S. On the diagram above. the write operation will
be controlled by the leading edge of S. not W. Data can only be written when both Sand Ware low. Either S or Wbeing
high inhibits the write operation. To prevent erroneous data being written into the array. the addresses must be stable during the write cycle as defined by tsu(A). tw(W). and th(A).
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
18·
8-6
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
ADVANCED MEMORY
DEVELOPMENT
TMS2150
CACHE ADDRESS COMPARATOR
MARCH 1982 - REVISED SEPTEMBER 1983
•
Fast Address to Match Valid Delay - Two
Speed Ranges: 45 ns, 55 ns
TMS2150 ... JDL PACKAGE
(TOP VIEW)
0
512 X 9 Internal RAM
0
300-Mil 24-Pin Ceramic Side Brazed
Package
A5
0
Max Power Dissipation: 660 mW
A3
AB
•
On-Chip Parity Generation and Checking
A2
A7
0
Parity Error Output/Force Parity Error Input
D5
0
On-Chip Address/Data Comparator
D4
0
Asynchronous, Single-Cycle Reset
D6
0
Easily Expandable
VCC
Al
AO
A6
D7
MATCH
VSS-....._ _..r-
0
Fully Static, TTL Compatible
0
Reliable SMOS (Scaled NMOS) Technology
S
...o
~
c.
C.
::::J
en
~
description
The S-bit-slice cache address comparator consists of a high-speed 51 2 X 9 static RAM array. parity generator. and
parity checker. and 9-bit high-speed comparator. It is fabricated using N-channelsilicon gate technology for high speed
and simple interface with MOS and bipolar TTL circuits. The cache address comparator is easily cascadable for wider
tag addresses or deeper tag memories. Significant reductions in cache memory component count. board area. and
power dissipation can be achieved with this device.
When S is low and W is high. the cache address comparator compares the contents of the memory location addressed
by AO-AS with the data on 00-07 plus generated parity. An equality is indicated by a high level on the MATCH output.
A low-level output from PE signifies a parity error in the internal RAM data. PE is an N-channel open-drain output for
easy OR-tieing. During a write cycle (S and W lowl. data on 00-07 plus generated even parity are written in the 9-bit
memory location addressed by AO-AS. Also during write. a parity error may be forced by holding PE low.
A RESET input is provided for initialization. When RESET goes low. all 51 2 X 9 RAM locations will be cleared and the
MATCH output will be forced high.
o
E
Q)
2
"0
C
m
2
«
a:
(,)
.~
m
~
en
The cach~ address comparator operates from· a single + 5 V supply and is offered in a 24-pin 300-mil side brazed
package. The device is fully TTL compatible and is guaranteed to operate from 0 DC to 70 DC.
FUNCTION TABLE
MATCH OUTPUT DESCRIPTION
MATCH
=
VOH if:
or:
or:
5
or:
IN
MATCH = VOL if:
= 00-07 +parity.
= VIL.
[AO-AS)
RESET
PE
DESCRIPTION
Parity Error
= VIH.
L
L
VIL
L
H
Not Equal
H
L
Undefined Error
H
H
Equal
=
[AO-AS) t 00-07 +parity.
with RESET = VIH.
5
FUNCTION
OUTPUT
MATCH
= VIL. and
VII
= VIH
Copyright © 1983 by Texas Instruments Incorporated
4
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-7
TMS2150
CACHE ADDRESS COMPARATOR
functional block diagram (positive logic)
~------~~----~--------------------------------,
COMP
(22)
AO
Al
A2
A3
A4
AS
A6
A7
(23)
>-____..;.(...;14.;..)
(5)
MATCH
(4)
(3)
(2)
(19)
(11)
Pe
(20)
AS
,..C/)
m
,..
n"
DO
:a
03
01
02
l>
D4
3:
05
06
m
=
07
Q.
3:
CD
3
o
-<
C/)
C
"C
"C
o
;:l
PIN FUNCTION
C
DESCRIPTION
CD
AO:AS. Address Inputs
Address 1 of 512-by-9-bit random-access memory locations.
g"
00-07. Data Inputs
Compared with memory location addressed by AD-AS when W = V,H and S
Provides input data to RAM when W = V,L and S = V,L.
RESET. Input
Asynchronously clears entire RAM array and forces MATCH high when RESET = V,L
andW = V,H.
<
(I)
S.
Chip Select Input
= V,L.
Enables device when S = VIL. Deselects device and forces MATCH high when
= V,H.
S
W.
Write Control Input
Writes 00-07 + generated parity into RAM and forces MATCH high when Vi = V,L
with S = V,L. Places selected device in compare mode if IN = VIH.
PE.
Parity Error Input/Output
During write cycles PE can force a parity error into the 9-bit location specified by
AD-AS when PE = V,L. For compare cycles. PE = VOL indicates a parity error in the
stored data. PE is an open-drain output so an external pull-up resistor is required.
MATCH. Output
When MATCH = VOH during a compare cycle. 00-07 + parity equal the contents of
the 9-bit memory location addressed by AD-AS.
VSS
Circuit GNO potential.
VCC
+5
V circuit power supply.
11
8-8
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS2150
CACHE ADDRESS COMPARATOR
absolute maximum ratings over operating free-air temperature range (unless otherwise specified)
Supply voltage range, Vcc (see Note 1)
...................................... "
-1.5 V to 7 V
Input voltage range, any input
.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
-1.5 V to 7 V
Continuous power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W
Operating free-air temperature range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . O°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _65°C to 150°C
NOTE1: All voltage values are with respect to
Vss.
recommended operating conditions
PARAMETER
Supply voltage. Vee
MIN
NOM
MAX
4.5
5
5.5
V
t/)
6
0.8
70
V
Q)
High-level input voltage. VIH
2
Low·level input voltage. VIL (See Note 21
-1
Operating free-air temperature. T A
0
UNIT
V
De
CJ
oS;
Q)
C
NOTE 2:
The algebraic convention. where the more negative (less positivellimit is designated as minimum. is used in this data sheet for logic voltage levels
only.
-
....
o
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
0.
0.
::J
CI'J
PARAMETER
TEST CONDITIONS
VOH(M)
MATCH high-level output voltage
10H= -2 rnA. VCC=4.5 V
VOL(M)
MATCH low-level output voltage
IOL=4 rnA.
MAX
2.4
MIN
TYP
MAX
UNIT
V
2.4
~
o
E
Q)
0.4
V
VCC=4.5 V
0.4
0.4
V
~
10
10
J1-A
"C
C
CO
VOL(PE)
II
IOL=12 rnA.
VI=O V to 5.5 V
10L(PE)
PE output sink current
VOL =0.4 V.
VCC=4.5 V
VCC=5.5 V.
VO=GND
Short-circuit MATCH
TYP
0.4
output voltage
Input current
output current
MIN
TMS2150-5
VCC=4.5 V
PE low-level
lOS
TMS2150-4
12
12
rnA
-150
-150
rnA
~
ICC2
Supply' current (reset)
RESET=VIL
140
mA
«
a:
Ci
Input capacitance
VI-O V.
f-1 MHz
5
5
pF
0';:;
Co
Output capacitance
VO=O V.
f=1 MHz
6
6
pF
....CO
CI'J
ICC1
Supply current (operative)
95
135
85
128
rnA
115
145
110
RESET=VIH
ac test conditions
CJ
GND to 3 V
Input pulse levels
Input rise and fall times
5 ns
Input timing reference levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output timing reference level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
Output loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figures 1 A and 1 B
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-9
TMS2150
CACHE ADDRESS COMPARATOR
switching characteristics over recommended ranges of supply voltage and operating free-air temperature
TMS2150-4
PARAMETER
talA)
talA-PI
ta(S)
MIN
MAX
TMS2150-5
MIN
45
55
Access time from address to MATCH
Access time from address to PE
Access time from S to MATCH
MAX
UNIT
55
65
ns
ns
25
35
ns
tp(DI
Propagation time. data inputs to MATCH
35
45
ns
tp(R-MH)
Propagation time. RESET low to MATCH high
30
40
ns
!IJ(S-MHI
tp(W-MH)
Propagation time. S high to MATCH high
30
40
ns
tp(W-PH)
Propagation time. W low to MATCH high
Propagation time. W low to PE high
25
25
35
35
ns
ns
VJ
tv(A)
MATCH valid time after change of address
m
1+
tv(A-P)
PE valid time after change of address
1+
n°
/
5
5
ns
15
15
ns
timing requirements over recommended ranges of supply voltage and operating free-air temperature
::D
l>
PARAMETER
3:
m
c.
TMS2150-4
TMS2150-5
MIN
MIN
MAX
MAX
UNIT
tc(W)
Write cycle time
45
55
ns
tc(rdl
Read cycle time
45
55
ns
3:
twIRL)
tw(WL)
Pulse duration. RESET low
35
45
ns
3
tsu(A)
Pulse duration. W low
Address setup time before W low
30
0
35
0
ns
ns
-<
tsu(D)
Data setup time before W high
25
30
ns
tsu(PI
PE setup time before W high
25
30
ns
VJ
tsu(S)
Chip select setup time before W high
25
35
ns
't:I
't:I
tsu(RHI
th(A)
RESET inactive setup time before first tag cycle
Address hold time after W high
0
0
0
5
ns
ns
th(D)
Data hold time after W high
5
10
ns
th(P)
PE hold time after W high
0
5
ns
0
0
ns
45
50
ns
::::J
CD
o
C
o
~
C
thIS)
Chip select hold time after W high
<
tAVWH
Address valid to write enable
CD
(;"
CD
en
1.
8-10
TEXAS
INSTRUMENTS
POST'OFFICE BOX 225012 • DALLAS, TEXAS 75265
TMS2150
CACHE ADDRESS COMPARATOR
PARAMETER MEASUREMENT INFORMATION
Vee
TEST
TEST
POINT
POINT
Vee
41011
960 11
FROM OUTPUT
FROM OUTPUT
UNDERTEST----~-------.
UNDERTEST----~-------e
15 pF
82011
51011
30PF~
en
G)
Co)
FIGURE 1A-PE OUTPUT LOAD CIRCUIT
FIGURE 1B-MATCH OUTPUT LOAD CIRCUIT
os:
G)
C
t::
o
Co
Co
~
en
~
o
E
G)
:2
compare cycle timing
~
AO-AS
I
~
ADDRESS VALID
DO-D7
talA)
X~---~
s::
PE (INPUT)
m
:::I
c..
s::CD
MATCH
3
o
-<
~I
l
PE (OUTPUT)
en
c
\-----
!--tp(W-PH)---;
'C
'C
o
::l
C
CD
reset cycle timing
<
C:;"
~
\
CD
en
ADDRESS
~
FIRST TAG CYCLE
~---------
MATCH
------~~--~/i
I-t
\----------------
p (R-MHI-/
NOTE:
I nput pulse levels are 0 V and 3 V. with rise and fall times of 5 ns. The timing reference levels on the input pulses are O.B V and 2.0 V.
The timing reference level for output pulses Is 1.5 V. See Figures 1A and 1 B for output loading.
Texas Instruments reserves the right to make changes at a~y time in order to improve design and to supply the best product possible.
8-12
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
MOS
LSI
TMS4016
2048·WORD BY 8·BIT STATIC RAM
FEBRUARY 1981 - REVISED AUGUST 1983
•
2K X a Organization. Common I/O
•
Single
•
Fully Static Operation (No Clocks. No
Refresh)
TMS40l6 ... NL PACKAGE
(TOP VIEW)
+ 5-V Supply
AS
A9
•
JEDEC Standard Pinout
•
24-Pin 600 Mil (15.2 mm) Package
Configuration
•
Plug-in Compatible with 16K 5 V EPROMs
•
a-Bit Output for Use in MicroprocessorBased Systems
•
3-State Outputs with
• G Eliminates
Vee
S for
Dal
en
G)
U
OR-ties
oS;
G)
Need for External Bus Buffers
•
All Inputs and Outputs Fully TTL Compatible
•
Fanout to Series 74, Series 74S or Series
74LS TTL Loads
•
Power Dissipation Under 385 mW Max
•
Guaranteed dc Noise Immunity of 400 mV
with Standard TTL Loads
•
4 Performance Ranges:
1::
o
0.
0.
PIN NOMENCLATURE
N-Channel Silicon-Gate Technology
•
C
AO - A10
Addresses
Da1 - Das
Data In/Data Out
~
Output Enable
S
Chip Select
Vee
+5-V Supply
VSS
Ground
W
Write Enable
:::s
len
~
o
E
G)
~
"0
C
ca
ACCESS TIME (MAX)
TMS4016-12
TMS4016-15
TMS4016-20
TMS4016-25
120
150
200
250
~
ns
ns
ns
ns
~
description
The TMS4016 static random-access memory is organized as 2048 words of 8 bits each. Fabricated using proven
N-channel, silicon-gate MOS technology, the TMS4016 operates at high speeds and draws less power per bit than
4K static RAMs. It is fully compatible with Series 74, 74S, or 74LS TTL. Its static design means that no refresh clocking circuitry is needed and timing requirements are simplified. Access time is equal to cycle time. A chip select control
is provided for controlling the flow of data-in and data-out and an output enable function is included in order to eliminate
the need for external bus buffers.
Of special importance is that the TMS4016 static RAM has the same standardized pinout as TI's compatible EPROM
family. This, along with other compatible features, makes the TMS4016 plug-in compatible with the TMS2516 (or
other 16K 5 V EPROMsl. Minimal, if any modifications are needed. This allows the microprocessor system designer
complete flexibility in partitioning his memory board between read/write and non-volatile storage.
The TMS4016 is offered in the plastic (NL suffix) 24-pin dual-in-line package designed for insertion in mounting hole
rows on 600-mil (15.2 mm) centers. It is guaranteed for operation from ooe to 70°C.
Copyright © 1983 by Texas Instruments Incorporated
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-13
TMS4016
2048·WORD BY 8·BIT STATIC RAM
operation
addresses (AO - A 10)
The eleven address inputs select one of the 2048 8-bit words in the RAM. The address-inputs must be stable for
the duration of a write cycle. The address inputs can be driven directly from standard Series 54/74 TTL with no external pull-up resistors.
output enable
iGi
The output enable terminal, which can be driven directly from standard TTL circuits, affects only the data-out terminals. When output enable is at a logic high level, the output terminals are disabled to the high-impedance state.
Output enable provides greater output control flexibility, simplifying data bus design.
chip select (S)
en
S
...
r;"
The chip-select terminal, which can be driven directly from standard TTL circuits, affects the data-in/data-out terminals. When chip select and output enable are at a logic low level, the D/Q terminals are enabled. When chip select
is high, the D/Q terminals are in the floating or high-impedance state and the input is inhibited.
::a
write enable (W)
»
3:
C»
=
Q.
3:
3
o
CD
-<
en
c
The read or write mode is selected through the write enable terminal. A logic high selects the read mode; a logic low
selects the write mode. ijJ must be high when changing addresses to prevent erroneously writing data into a memory
location. The W input can be driven directly from standard TTL circuits.
data-in/data-out (DQ1 - DQB)
Data can be written into a selected device when the write enable input is low. The D/Q terminal can be driven directly
from standard TTL circuits. The three-state output buffer provides direct TTL compatibility with a fan-out of one Series
74 TTL gate, one Series 74S TTL gate, or five Series 74LS TTL gates. The D/Q terminals are in the high impedance
state when chip select (S) is high, output enable (G) is high, or whenever a write operation is being performed. Dataout is the same polarity as data-in.
'C
'C
o
:::l
C
CD
<
n"
CD
fn
8-14
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4016
204H-WORD BY H-BIT STATIC RAM
logic symbol t
AO
Al
RAM Z048xS
(S)
0
(7)
(6)
AZ
A3
A4
A5
AG
A7
AS
A9
Al0
S
G
Vi
DOl
DOZ
(5)
(4)
(3)
> A2~7
(2)
FUNCTION TABLE
(1)
(Z3)
(Z2)
(19)
10
(1S)
....
(20)
...
(21)
W
5
G
Dal-Das
MODE
L
L
X
VALID DATA
WRITE
H
L
L
DATA OUTPUT
READ
X
H
X
HI-Z
DEVICE DISABLED
L
H
HI-Z
OUTPUT DISABLED
H
Gl
en
Q)
(,)
-$
Q)
c
GZ
1,2 EN [READ)
~
O.
Co
Co
:::l
~ lC3 [WRITE)
...,
(9)
(10)
l.-
r
A,3D
CJ)
.
A,Z4
\74
>
o
E
Q)
(11)
D03
(13)
D04
~
(14)
D05
(15)
"t:I
C
DOG
(16)
ca
D07
(17)
~
DOS
«
a:
tThis symbol is in accordance with IEEE Std 91/ANSI Y3Z_14 and recent decisions by IEEE and IEC_ See explanation on page 10-1.
(,)
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) t
-.;.
ca
....
Supply voltage. VCC (see Note 1) _ ....... _ ....... _ . __ .... _ .. __ ... _ . _ ....... __ . .. -0.5 V to 7 V
Input voltage (any input) (see Note 1) __ ......... _ .. _ .. _ ......................... _. -1 V to 7 V
Continuous power dissipation ... __ .... _ .. _ .... _ . _ ....... _ ....... _ . _ .. __ ... _ . _ ... _ . _. . .. 1 W
Operating free-air temperature range .... ___ ....... _ .... _ .. _ . _ .... _ ............ _ .. _ O°C to 70°C
Storage temperature range . __ ....... _ ...... __ ... _ .. _ ......... _ ....... _ . . . . .. - 55°C to 1 50°C
CJ)
t Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maxi mum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to the VSS terminal.
recommended operating conditions
'.
PARAMETER
Supply voltage. Vee
MIN
NOM
MAX
4.5
5
5.5
\
Supply voltage. VSS
High-level input voltage. VIH
0
Operating free-air temperature. T A
V
V
V
\-1
5.5
O.S
\0
70
°e
\ 2
Low-level input voltage. VIL (see Note 2)
UNIT
V
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum. is used in this data s,et for logic voltage levels only.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
\
\
8-15
TMS4016
2048-WORD BY 8-BIT STATIC RAM
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
...tn...
(=i"
Typt
MIN
TEST CONDITIONS
PARAMETER
VOH
High level voltage
IOH= -,. mA,
VCC=4.5 V
VOL
Low level voltage
IOL=2.1 mA,
VCC=4.5 V
I,
Input current
V,=O V to 5.5 V
10Z
Off-state output current
MAX
S or G at 2 V or W at 0.8 V,
VO=O V to 5.5 V
10=0 mA,
UNIT
V
2.4
VCC=5.5 V,
40
0.4
V
10
p.A
10
p.A
70
mA
ICC
Supply current from VCC
Cj
Input capacitance
V,=O V,
f=l MHz
8
pF
Co
Output capacitance
VO=OV,
f=l MHz
12
pF
T A = 0 °c (worst case)
t All typical values are at VCC ~ 5 V, TA ~ 25°C .
Q)
::u
timing requirements over recommended supply voltage range and operating free-air temperature range
l>
s:
TMS4016-12 TMS4016·15 TMS4016-20 TMS4016-25
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
Q)
tc(rd}
Read cycle time
120
150
200
250
::::J
tC(wrl
Write cycle time
120
150
200
250
ns
s:
tw(W}
Write pulse width
60
80
100
120
ns
tsu(A}
Address setup time
20
20
20
20
ns
3
tsu(S}
Chip select setup time
60
80
100
120
ns
tsu(D}
Data setup time
50
60
80
100
ns
th(A}
Address hold time
0
0
0
0
ns
th(D}
Data hold time
5
10
10
10
ns
Co
ell
o
-<
tn
:gc
o
......
switching characteristics over recommended voltage range, T A = ooe to 70
of Figure 1 (see notes 3 and 4)
c
PARAMETER
CD
<
(=i"
CD
en
talA)
Access time from address
ta(S}
e with output loading
TMS4016-12
TMS4016-15 TMS4016-20 TMS4016-25
MIN
MIN
MAX
MAX
MIN
MAX
MIN
MAX
UNIT
120
150
200
250
ns
Access time from chip select low
60
75
100
120
ns
talG}
Access time from output enable low
50
60
80
100
ns
tv(A}
Output data valid after address change
tdis(S}
Output disable time after chip select high
40
80
ns
tdis(G}
Output disable time after output enable high
40
50
60
80
ns
tdislW)
Output disable time after write enable low
50
60
60
80
ns
10
15
15
50
15
60
ns
ten IS}
Output enable time after chip select low
5
5
10
10
ns
ten(G}
Output enable time after output enable low
5
5
10
10
ns
ten(W}
Output enable time after write enable high
5
5
10
10
ns
NOTES: 3. CL ~ 100 pF for all measurements except tois(W) and ten(W)'
CL ~ 5 pF for tdis(W) and ten(W)'
4. tdis and ten parameters are sampled and not 100% tested.
8-16
0
ns
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4016
2048-WDRD BY 8-BIT STATIC RAM
PARAMETER MEASUREMENT INFORMATION
+1.755V
OUTPUT
UNDER TEST
en
Q)
(,)
-S;
Q)
FIGURE 1 - OUTPUT LOAD
C
1::
o
c.
c.
:s
t/)
timing waveform of read cycle (see note 5)
...o>
f41IIIt--------tc(rd)---------t~...
ADDRESS
~~------f'~'--111114t-----ta(A)I------'.~1
N
I
NI
I ~ta(G)-----I
1---
;1"--,
Il.-tV(A)~
1!1 I
:.:.:.-:..-=-.-----t- --t---.-- llf
~',"IG~
"-j4
..
a (S-)
JIIIIWI------ten(S)-----.~1
DQ(out)
I
1
r
II
------------~I~
I
"i"G~
E
Q)
~
"'C
c:
CO
~
~
(,)
-.;::.
....CO
t/)
===
~
tdis(S)~
,,,' No<" 9,131
All timing reference points are 0.8 V and 2.0 V on inputs and 0.6 V and 2.2 V on outputs (90% points). Input rise and fall times equal 10 ns.
NOTE 5:
iN is high
for Read Cycle.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
8·17
TMS4016
2048·WORD BY 8·BIT STATIC RAM
timing waveform of write cycle no. 1 (see note 6)
ADDRESS
G
---...
!
-A
IX:
~
4
I
-./I
t4-- tsu(S)-----+I
I·
,,,' ""
\\1\\\~
W
-l .,._____
'"w,)
10)
\.(see note 8)
I
(:?.I--l~Z,....Z,....Z.,...Z..,..Z~;
I .1. ._ _ _ __
-<>I ,,2"A)
,,,' """ 9, 13)1
j4- t h(A)
~
~
~ tw(W)---IN
(see note 7) - I
DQ(out)
DQ(in)
timing waveform of write cycle no. 2 (see notes 6 and 11)
t::~:;....-------tc(wr)------""",..c
ADDRESS
W
c
<
rr
(I)
I I\\\\\ij4-tW(W)-:-'iVi~
-«>I ~tsU(A)
(see note 7)
. I
-+f
~
(see notes 9, 13)
tdis(W)
r"Tten(W)---.t
A'"~~:Ir'"'''r
DQ(out)
(I)
en
DQ(in) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
~
All timing reference points are 0.8 V and 2.0 V on inputs and 0.6 V and 2.2 V on outputs (90% points). Input rise and fall times equal 10 nanoseconds.
NOTES:
6.
7.
8.
9.
10.
11.
12.
13.
14.
W must
be high during all address transitions.
A write occurs during the overlap of a low S and a low W.
th(A) is measured from the earlier of S or iN going high to the end of the write cycle.
During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.
If the S low transition occurs simultaneously with the iii low transitions or after the iii transition, output remains in a high impedance state.
G is continuously low (G = YIL).
If S is low during this period, I/O pins are in the output state. Data input signals of opposite phase to the outputs must not be applied.
Transition is measured ± 200 mV from steady-state voltage.
If the S low transition occurs before the iN low transition, then the data input signals of opposite phase to the outputs must not be applied
for the duration of tdis(W) after the iii low transition.
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
8-18
TEXAs
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
MOS
LSI
TMS4044, TMS40L44
4096-WORD BY 1-BIT STATIC RAMS
DECEMBER 1977 - REVISED MAY 1982
+ s-v Supply
•
Single
•
High Density 300-mil (7.62 mm) 18-Pin
Package
•
•
AO
A1
A2
A3
A4
A5
Fully Static Operation (No Clocks, No Refresh,
No Timing Strobe)
4 Performance Ranges:
TMS4044-12,
TMS4044-20,
TMS4044-25,
TMS4044-45,
•
TMS4044/TMS40L44 ..• NL PACKAGE
(TOP VIEW)
(± 10% Tolerance)
TMS40L44-12
TMS40L44-20
TMS40L44-25
TMS40L44-45
ACCESS READ
TIME
(MAX)
120 ns
200 ns
250 ns
450 ns
OR WRITE
CYCLE
(MIN)
120 ns
200 ns
250 ns
450 ns
•
Common I/O Capability
•
3-State Outputs and Chip Select Control for
OR-Tie Capability
Fan-Out to 2 Series 74, 1 Series 74S, or 8
Series 74LS TTL Loads
•
Low Power Dissipation
TMS4044
TMS40L44
MAX
(OPERATING)
303 mW
220 mW
A6
A7
AS
A9
A10
A11
Vi
D
Vss
5
f/)
Q)
CJ
oS;
Q)
PIN NOMENCLATURE
Addresses
C
D
Data In
t::
Q
Data Out
S
Chip Select
c.
AD - A11
400-mV Guaranteed DC Noise Immunity
with Standard TTL Loads - No Pull-Up
Resistors Required
•
Q
Vee
VCC
+5-V Supply
VSS
Ground
iN
Write Enable
o
C.
:::::I
en
...>
o
E
Q)
~
"C
c:
~
MAX
(STANDBY)
84mW
60 mW
~
o
absolute maximum ratings over operating free-air temperature (unless otherwise noted) t
Supply voltage, VCC (see Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. -0.5 V to 7 V
[nput voltage (any input) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 1 V to 7 V
Continuous power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1 W
Operating free-air temperature range . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 0 DC to 70°C
Storage temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55°C to 150°C
E
CD
~
"C
C
CO
~
«a:
NOTE 1: Voltage values are with respect to the ground terminal.
(,)
t Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maxi mum-rated conditions for extended periods may affect device reliability.
0';'
CO
....
C/)
recommended operating conditions
PARAMETER
MIN
TMS4044-12
Supply voltage, VCC
Operating
4.5
NOM MAX
5
TMS40L44-1 2
Standby
2.4
5.5
TMS4044-20
TMS40L44-20
Operating
5.5
Standby
4.5
2.4
Operating
4.5
5.5
Standby
2.4
5.5
Operating
4.5
TMS4044-25
TMS40L44-25
TMS40L44-45
TMS4044-45
Supply voltage, VSS
5.5
Low-level input voltage, VIL (see Note 2)
Operating free-air temperature, T A
V
5.5
0
High-level input voltage, VIH
UNIT
5.5
V
2
5.5
-1
0.8
V
0
70
°C
V
NOTE 2: The algebraic convention, where the more negative lIess positive) limit is designated as minimum, is used in this data sheet for logic voltage levels only.
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-21
TMS4044, TMS40L44
4096·WORDBY '·BIT STATIC RAMS
electrical characteristics over recommended operating free-air temperature ranges (unless otherwise noted)
TEST CONDITIONS
PARAMETER
MIN
VOH
High-level output voltage
10H= -1.0 mA
Vee=4.5 V
VOL
Low-level output voltage
IOL=3.2 mA
Vee=4.5 V
II
Input current
10Z
Off-state output current
VI=O V to 5.5 V
Sat 2 V or
,..fJ)
,..
n'
TMS4044-20
Supply current from Vce
TMS4044-25
TMS4044-45
TA = 0 °c (worst case)
Q)
Ci
l>
Co
V
10
p.A
±10
p.A
40
Vec=2.4 V
15
25
Vec=MAX
50
55
VCC=2.4 V
25
35
VCC=MAX
50
55
mA
Input capacitance
VI=O V,
f= 1 MHz
8
pF
Output capacitance
VO=O V,
f= 1 MHz
8
pF
:xJ
3:
UNIT
0.4
25
Vee=MAX
TMS4044-12
10=0 mA
MAX
V
VO=O V to 5.5V
Wat 0.8 V
TMS40L44
ICC
Typt
2.4
Q)
::J
c..
3:
(1)3
o
t All typical vaiues are at Vee = 5 V, TA = 25°C.
timing requirements over recommended supply voltage range, T A
CL=100 pF
-<
PARAMETER
fJ)
C
'C
'C
o
~
C
(1)
ac,
1 Series 74 TTL load,
TMS4044-12 TMS4044-20 TMS4044-25 TMS4044-45
TMS40L44-12 TMS40L44-20 TMS40L44-25 TMS40L44·45
MAX
MIN
250
MAX
UNIT
Read cycle time
Write cycle time
120
200
250
450
ns
tv(W)
tw(W)
Address valid to end of write
110
180
230
230
ns
Write pulse width
Address set up time
60
0
60
75
200
0
0
0
ns
ns
Chip select set up time
Data set up time
60
50
60
60
75
75
200
200
ns
ns
tsu(D)
MIN
450
MAX
tc(wr)
<
MAX
MIN
200
tc(rd)
(1)
(I)
8-22
to 70
MIN
120
'tsu(A)
tsu(S)
n'
=0 ac
ns
th(D)
Data hold time
0
0
0
0
ns
th(A)
Address hold time
0
0
0
0
ns
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
TMS4044, TMS40L44
4096·WORD BY l·BIT STATIC RAMS
switching characteristics over recommended voltage range, TA = 0 °C to 70 °C, 1 Series 74 TTL load, CL = 100 pF
TMS4044-12
TMS4044-20
TMS4044-25
TMS4044-45
TMS40L44-12 TMS40L44-20 TMS40L44-25 TMS40L44-45
PARAMETER
MAX
MIN
MIN
MAX
MIN
MAX
MIN
UNIT
MAX
talM
Access time from address
120
200
, 250
450
ns
ta(S)
Access time from chip select low
70
70
100
100
ns
ta(W)
Access time from write enable high
70
70
100
100
tv(A)
Output data valid after address change
tdis(S)
Output disable time after chip select high
50
60
60
80
ns
tdis(W)
Output disable time after write enable low
50
60
60
80
ns
20
20
20
20
ns
ns
en
read cycle timing (see Note 3)
Q)
0
'>
VVIIHL _______
ADDRESS, A
~'n...r~_··_-_-_-_-_-_-_-_-_-_-_-_-_-_-_-_-
VOH
OUTPUT DATA, Q
VOL
_
.......
___t_C_(r_d_)_________________
ADDRESS VALID
CHIP SELECT,S
VIL
Q)
C
I
---t=
.
0
tdis(S)
--t-ta(S)
c.
c.
::::s
en
...>0
E
Q)
tv(A)
HI-Z
HI-Z~~----------------------~--~~~~
ta(A)-
~
"C
C
nJ
~
All timing reference points are 0.8 V and 2.0 V on inputs and 0.6 V and 2.2 V on outputs (90% points). Input rise-and fall times
=
10 ns.
«
a:
0
'';;
NOTE 3. Write enable is high for a read cycle.
....nJ
en
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-23
TMS4044, TMS40L44
4096·WORD BY '·BIT STATIC RAMS
early write cycle timing
. . . - - - - - - - - - - - t c ( w r ) ------------~
VIH
ADDRESS, A
\70~~~ k~--------------------------------------------~
VIL~~~Y ~~----~--------------------------------------~
VIH
WRITE ENABLE,
W
...enm
...Cio
CHIP SELECT,S
;u
INPUT DATA, 0
--------.1
l-
3:
m
OUTPUT, Q
~
c.
3:
3
o
VOH - - - - - - - - - - - - - - - - - H I - Z - - - - - - - - - - - - - - VOL
read-write cycle timing
CI)
-<
en
1:-tSU-(A-)--------------------th(-A)=:I.==:j<~--------
ADDRESS, A
c
"C
"C
1
o
~
C
WRITE ENABLE,
CI)
<
Cio
W
I,
CI)
en
CHIP SELECT,
S
INPUT DATA, 0
VOH
OUTPUT, Q
-t'
VALID
ta(S)
•
HI-Z
J-----HI-Z----(I
VOL
..
ta(A)-I
Texas Instruments reserves the right to make changes at any time in order to improve dasign and to supply the best product possible .
8-24
. TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
MILITARY
CMOS
LSI
•
SMJ5517
2048-WORD BY 8-BIT STATIC RAM
DECEMBER 1983
SMJ5517 ... JD PACKAGEt
(TOP VIEW)
2K X 8 Organization, Common I/O
+ 5-V Supply'
•
Single
•
Fully Static Operation (No Clocks,
No Refresh)
Vee
•
JEDEC Standard Pinout
•
24-Pin 600-Mil (15,2 mm) Package
Configuration
•
Pin Compatible with TMS2516, TMS4016,
MB8416, HM6116, and TC5517
•
8-Bit Output for Use in Microproce~sorBased Systems
G
3-State Outputs with
•
All Inputs and Outputs Fully TTL Compatible
•
Fanout to One Series 54S/74S, Five Series
54LS/74LS or Twenty Series 54ALS/74ALS
TTL Loads
•
•
ACCESS TIME (MAX)
150 ns
200 ns
~
o
c.
c.
u
" u u u uuu
zz
A6
A5
A4
A3
A2
Al
150 mW Typical
5 mW Typical
50 p.W Typical
c
SMJ5517 ..• FG PACKAGE
(TOP VIEW)
Performance Ranges:
SMJ5517-15
SMJ5517-20
CD
-:;CJ
CD
Complementary Silicon Gate MOS
Technology with a Six Transistor
Memory Cell
Power Dissipation:
Operating
.- Standby
- Data Retention
en
E for OR-ties
•
•
A7
A6
A8
A5
A9
A4
W
A3
A2
Al0
Al
E
AO
D08
DOl
D07
D02
D06
D03
D05
VSS-...._ _....r-D04
DOl
5
4 3 2 1 323130
6
29
6
7
8
28
27
26
9
25
10
24
11
23
12
22
13
21
14151617181920
:::s
en
...o>
AS
E
CD
A9
NC
~
W
G
"C
C
co
A10
E
~
«
a:
D08
D07
CJ
-.;:.
...,co
en
description
The SMJ5517 static random-access memory is
organized as 2048 words of 8-bits each. Fabricated
using complementary silicon-gate MOS technology;
the SMJ5517 operates at high speed and uses less
power than conventional NMOS 2K x 8 static RAMs.
It is fully compatible with Series 54174, Series
54S/74S, or 54LS174LS TTL. Its static design means
that no refresh clocking circuitry is needed and timing requirements are simplified. Access time is equal
to cycle time. A chip-enable control is provided for
controlling the flow of data-in and data-out and
another output enable function is included to allow
faster access time.
PIN NOMENCLATURE
AO-A 10
Address
DO 1-008
Data In/Data Out
E
Chip Enable/Power Down
G
Output Enable
VCC
+ 5-V
~S
Ground
Write Enable
W
Supply
The SMJ5517 static RAM has the same standard pinout as Tl's compatible 16K SRAMs, and EPROMs. This makes
the SMJ5517 plug-in-compatible with the '4016 and the '2516. Few modifications, if any, are needed for other 16K
t Low cost J package available soon.
4
Copyright © 1983 by Texas Instruments Incorporated
ADVANCE INFORMATION
This document contains Information on a new product.
Specifications are subject to change without notice.
TEXAS
INSTRUMENlS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-25
SMJ5517
2048·WDRD BY 8·BIT STATIC RAM
5-V SRAM or EPROM. This allows the microprocessor system designer complete flexibility in partitioning his memory
board between read/write and nonvolatile storage. Of special importance is the data retention feature of the SMJ5517,
as long as Vee ;;:= 2 V, the device retains data indefinitely.
The SMJ5517 is offered in a 24-pin dual-in-line ceramic sidebraze package (JD suffix) and in a 32-pad leadless ceramic
chip carrier (FG). The JD package is designed for insertion in mounting-hole rows on BOO-mil (15,2 mm) centers, whereas
the FG package is intended for surface mounting on solder pads on 0.050-inch (1 ,27 mm) centers. The FG package
offers a three layer rectangular chip carrier with dimensions 0.450 x 0.550 x 0.1 00 (11,43 x 13,97 x 2,54).
operation
addresses (AO-A 10)
....en
....DI
Cr
:u
»
~
DI
::2
C.
~
~
3
o
-<
en
c
The eleven address inputs select one of the 2048 a-bit words in the RAM. The address-inputs must be stable for
the duration of a write cycle.
chip enable/power down (E)
The chip enable/power down terminal affects the data-in and data-out terminals and the internal functioning of the
chip itself. Whenever the chip enable/power down is low (enabled), the device is operational, input and output terminals are enabled, and data can be read or written. When the chip enable/power down terminal is high (disabled),
the device is deselected and put into a reduced-power standby mode. Data is retained during standby.
output enable (6)
The output-enable terminal affects only the data-out terminals. When output enable is at a logic high level, the output
terminals are disabled to the high-impedance state. Output enable provides greater output control flexibility, simplifying data bus design.
write enable (W)
o
The read or write mode is selected through the write-enable terminal. A logic high selects the read mode; a logic low
selects the write mode. Wmust be high when changing addresses to prevent erroneously writing data into a memory
location.
C
data-In/data-out (001-008)
<
Data can be written into a selected device when the write-enable input is low. The three-state output buffer provides
direct TIL compatibility with a fan-out of one Series 54S/74S, five Series 54LS/74LS, or twenty Series 54ALS/74ALS
TIL loads. The D/Q terminals are in the high-impedance state when output enable (<3) is high, chip enable (E) is high,
or whenever a write operation is being performed. Data-out is the same polarity as data-in .
"C
"C
~
CD
n'
CD
•
en
8-26
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
SMJ5517
204a·WORD BY a·BIT STATIC RAM
functional block diagram
A4
-----t~
AS
A6
----4~
A7
-----t~
ADDRESS
BUFFER
8
8
OUTPUT
DATA
CONTROL
8
DQ1·0Q8 -4--t~f---I----4t--~"'"
en
CI)
CJ
'S
CI)
C
t:
o
Co
Co
~
en
..
AO
A2
A1
A3
>
o
E
CI)
:?!
"C
C
CO
:?!
A 2047
(2)
A.3D
r
A.Z4 ..
\74
(10) .....
_.
.
(14)_ ..
(11) _
(13) .....
(15) ... :
(16) .....
-..
(17) '.
t This symbol is in accordance with IEEE Std 91/ANSI Y32.14 and recent decisions by IEEE and IEC. See explanation on page 10-1.
en
absolute maximum ratings over operating case temperature range (unless otherwise noted) t
Supply voltage. VCC (see Note 1) .............................................
-0.5 V to 7 V
Input voltage (any input) (see Note 1) ...........................................
-1 V to 7 V
Continuous power dissipation ........................................................
1 W
..........................................
- 55 °C to 125°C
Operating case temperature range
Storage temperature range .................................................
- 55 °C to 150 °C
t Stresses beyond those listed under" Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other condition's beyond those indicated in the "Recommended Operating Conditions" section of this specification
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to the VSS terminal.
8-28
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
SMJ5517
2048·WORD BY 8·BIT STATIC RAM
recommended operating conditions
PARAMETER
Supply voltage, VCC
NOM
MAX
4.5
5
5.5
0
Supply voltage, VSS
High-level input voltage, VIH
VCC- 0 . 2
o.a
VSS-0.2
-55
125
2.2
Low-level input voltage, VIL (see Note 2)
Operating case temperature, TC
NOTE 2:
MIN
UNIT
V
V
V
V
°c
The algebraic convention, where the more negative (less positive I limit is designated as minimum, is used in this data sheet for logic voltage levels only.
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
(I)
PARAMETER
VOH
VOL .
II
TEST CONDITIONS
MIN
= -2 mA
= 2 mA
2.4
High-level output voltage
IOH
Low-level output voltage
All inputs except
10L
Input current
=
D01-DOa
VI
D01-DOa
VCC
0 V to 5.5 V,
=
5.5 V
inputs only
ICC3
Standby supply current from VCC
Data retention supply current from VCC
VCC = 5.5 V,
10 = 0, E = VIH MIN
E = VCC -0.2 V
VCC(DR)
VCC required for data retention
~
ICC1
ICC2
Operating supply current from VCC
t All typical values are at VCC
=
5 V, TC
=
=
Typt
UNIT
Q)
V
'$
0.4
V
-1
1
p.A
-5
5
p.A
90
mA
5
100
mA
p.A
5.5
V
30
2
VCC(DR) -0.2 V
MAX
25°C.
c.
c.
~
en
...>
o
E
Q)
SMJ5517-15
MIN
Read cycle time
Write cycle time
MAX
SMJ5517-20
MIN
MAX
C
CO
UNIT
150
150
200
200
90
120
ns
ns
ns
10
10
ns
90
120
ns
tc(rd)
tc(W)
tw(W)
Write pulse duration
tsu(A)
Address setup time
tsu(E)
Chip enable setup time
Data setup time
50
70
ns
10
10
100
10
10
130
ns
ns
th(D)
1::
o
~
PARAMETER
tAVWH
Q)
C
"C
timing requirements over recommended supply voltage range and operating case temperature range t
tsu(D)
th(A)
CJ
Address hold time
Data hold time
Address valid to write enable high
~
«
IX:
CJ
'';:
CO
....
en
ns
t AC test conditions:
Input pulse levels: 0.8 V and 2.2 V
Input rise and fall times: tr = tf = 5 ns
Input and output timing reference levels: 0.8 v and 2.2 V
Output load: 1 TIL gate, CL = 100 pF
34
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
8-29
SMJ5517
2048·WORD BY 8·BIT STATIC RAM
switching characteristics over recommended supply voltage range and operating case temperature range t
PARAMETER
SMJ5517-15
MIN MAX
SMJ5517-20
MIN MAX
UNIT
talA)
Access time from address
150
200
talE)
Access time from chip enable low
150
200
ns
talGl
Access time from output enable low
60
70
ns
tv(A)
tdis(E)
Output data valid after address change
10
tdis(G)
Output disable time after chip enable high
Output disable time after output enable high
10
50
50
ns
ns
60
60
ns
ns
50
ns
tdis(W)
Output disable time after write enable low
ten(E)
Output enable time after chip enable low
0
0
ns
ten (G)
Output enable time after output enable low
0
0
ns
tenlW)
Output enable time after write enable high
0
0
ns
50
t AC test conditions:
Input pulse levels: 0.8 V and 2.2 V
Input rise and fall times: tr = tf = 5 ns
Input and output timing reference levels: 0.8 V and 2.2 V
Output load: 1 TIL gate, CL = 100 pF
g
capacitance over recommended supply voltage and operating case temperature ranges, f
1 MHzt
C.
s:
Typt
MAX
C1I
Ci
Input capacitance
VI = 0 V, f = 1 MHz
5
10
pF
o
Co
Output capacitance
Vo = 0 V, f = 1 MHz
5
10
pF
PARAMETER
3
-<
en
TEST CONDITIONS
t Capacitance measurements are made on a sample basis only.
t
Typical values are TC = 25°C and nominal voltages.
c
"C
"C
...
o
ro+
c
C1I
<
n'
C1I
•
(I)
8-30
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
UNIT
SMJ5517
2048-WDRD BY 8-BIT STATIC RAM
PARAMETER MEASUREMENT INFORMATION
v
OUTPUT
UNDER TEST
---_a
T
C/)
CL = 100pF
Q)
CJ
-s:Q)
c
.......
FIGURE 1 - EQUIVALENT LOAD CIRCUIT
o
0.
0.
:::l
en
...>o
E
Q)
timing waveform of read cycle (see note 3)
~
"'C
C
1
...•. . . . - - - - - - - - tclrdl--------~·I
ADDRESS
~F----------------------------------~~~------------1-. ......- - - - - t a , A I
.1
:
~
I ~taIGI------.J
E"t
1
Ii+-tenIGI---t
II
t~~i-------------
if
i~J;;.----------:'---:----J I
I 1oI1•. . . . - - - - - - - t a I E I - - - -......1
I
1
... . 1 - - - - - t e n I E I - - - -.......1
I
I-
___________________________
~~
I ~tvIAI~
i
I
I· I
i.--tdiSIGI'-';1
tdislEI
D·
,... Not.. "
ca
~
I»
DOlin)
::::s
c.
3:
3
o
CD
tAVWH
.,
-I
I
I
1 ' - '
DO(out)
3:
(see NoteS)
...... tsu(A)
I-
::Il
,,",_______
. ¥fro-I- - -
I
tdls(G)
j 4 - - tw(W) --...
(see Notes 7. 11) (see Note 5) 1 I
~
------c¢
timing waveform of write cycle no. 2 (see notes 4 and 9)
-<
en
c
ADDRESS
"C
"C
o
::l
C
CD
<
n"
CD
i:IF------;!("I
. r--
•
U)
DO(out)
ten (WI
---I
Notes 7. 1111
th(D)..f (see Note 101
DOlin)
All timing reference points are O.B V and 2.2 V.
NOTES:
4. iN must be high during all address transitions.
5. A write occurs during the overlap of a low E and a low W.
6. th(A) is measured from the earlier of E or W going high to the end of the write cycle.
7. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.
B. If the E low transition occurs simultaneously with the W low transitions or after the W transition, output remains in a high impedance state.
9.
is continuously low IG = VIL)'
10. If E is low during this period, I/O pins are in the output state. Data input signals of opposite phase to the outputs must not be applied.
11. Transition is measured ± 200 mV from steady·state voltage.
12. If the low transition occurs before the iN low transition, then the data input signals of opposite phase to the outputs must not be applied
for the duration of tdislW) after the W low transition.
G
E
184
8-32
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
SMJ5517
204B·WORD BY B·BIT STATIC RAM
schematics of inputs and outputs
~
:J-
E
-
d d
INTERNALJ
CHIP SELECT
VI
en
Q)
(.)
~
'S;
Q)
.....
C
o
Co
Co
::J
..
CJ)
>
EQUIVALENT E INPUT CIRCUIT
EQUIVALENT INPUT CIRCUIT
o
E
Q)
~
d
.
INTERNAlJ
d
CHIP SELECT
"C
C
(U
~
3:
D)
:::l
C.
3:
3
CD
o
-<
fA
c
'C
'C
o
~
C
CD
<
(i'
CD
•
(I)
8-34
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
I
EPROM Devices
I~
ROM Devices
~
Static RAM and Memory Support Devices
Applications Information . .
Logic Symbols
Mechanical Data
Applications Brief
64K DYNAMIC RAM REFRESH ANALYSIS
SYSTEM DESIGN CONSIDERATIONS
64K SYSTEM HARDWARE
64 KHZ
OSCILLATOR
64K
.REFRESH
CONTROLLER
• 8 bit address mUltiplexing and
8 bit address bus are needed for
either 256 or 128 cycle refresh
on 64K.
• 128 cycle 64K s require 1 less
counter bit (7 vs. 8). This is, however, unlikely to be a practical
saving since counters/multiplexers come in 4 and 8 bit multiples.
128 CYCLE REFRES.H
64 KHz
OSCILLATOR
64K
REFRESH
CONTROLL'ER
• 256 cycle/4 ms refresh approach
aUows the same oscillator timing
(64 kHz) to be used when upgrading from 16K s (128 cycle/
2 ms period).
• Systems designed for 256 cycle
64K s can easily use 128 cycle
64K s.
256 CYCLE REFRESH
c
o
.~
......E
CO
Compatibility among all 64K Dynamic RAM vendors can be achieved by designing to TI's 4164
64K x 1 Dynamic RAM. The TMS 4164 requires all 256 rows to be refreshed within 4 ms. Competitive 64K D RAMs which are not able to achieve the 256 cycle, 4 ms refresh rate require twice
the number of sense amplifiers as the TMS 4164 and half the number of refresh addresses. A 64K
D RAM which requires the 128 cycle, 2 ms refresh treats the 256 cycle, 4 ms refresh as two refresh
events in 2 ms each.
Simply:
256 cycle in 4 ms
=2
o
.E
en
c
o
.~
CO
(128 cycle in 2 ms)
.5:a
Q.
c.
!l dd"
cp
f\)
W(3)
D
(2)
CAS
RAS
A7
(15)
(4)
(9)
(13)
A6
(10)
A5
(11 )
A4
(12)
A3
(6)
A2
(7)
A1
(5
AO
(Y»
MEMORY ARRAY
DUMMY CELLS
256 SENSE-REFRESH AMPS
Q(14)
IY» 4 of 256 COLUMN DECODE
DUMMY
DECODE
DUMMY CELLS
In
ct
(J
ROW
DECODE
IY» MEMORY ARRAY
CAO-CA7
FIGURE 1 - TMS4164 BLOCK DIAGRAM
6
ct
(J
CA6
CA7
W(4)
(1)
(16)
CAS
(5)
RAS
(10)
A7
(6)
A6
(7)
A5
A4
(8)
ROW
(11)
A3
(12)
A2
(13)
A1
(14)
AO
ROW
DECODE
(Yo) MEMORY ARRAY
DUMMY
DECODE
DUMMY CELLS
(Yo) 4 of 256 COLUMN DECODE
256 SENSE-REFRESH AMPS
(Yo) 4 of 256 COLUMN DECODE
COLUMN
ADDRESS
BUFFERS
(6)
DUMMY
DECODE
DUMMY CELLS
ROW
DECODE
(%) MEMORY ARRAY
CA1-CA6
-~~~~-
FIGURE 2 -
~
Ul
G
I
-----~---
TMS4416 BLOCK DIAGRAM
Applications Information
4
DATA
1/0
The falling edge of RAS causes R 1 to latch the row addresses into the row address buffers and enables interlock point
R2. The row addresses are then amplified and drive the row decoders for row selection. When RAO-RA 7 are valid, the
row address buffers output a signal to interlock point R2. A delay stage within R2 allows the row decoders time to complete
their decoding before the output of R2 goes low. R2 going iow enables the row decoders to drive the selected word line
high. Interlock R2 ensures two things: the row addresses are valid, and decoding is complete before the selected word
line is activated. Address RA7 causes dummy enable (DE) to select the row of dummy cells on the opposite side of the
array from the selected row of memory cells. After row and dummy selection is completed, the decoders then drive the
appropriate word lines high, connecting the memory and dummy cells to their corresponding bit lines. The differential vol~age
at the inputs of the sense amp is sensed, amplified, and driven back onto the bit lines; this refreshes the memory cells
in the selected row. The sense amp control then outputs a signal to interlock RC1 that indicates sensing is complete.
A high logic level on CAs holds the reset on 01 active and forces the 0 output of the data out buffer into a high-impedance
state. A logic low level on CAS removes the reset to allow clocking.
The falling edge of CAS causes interlock C1 to go low (assuming RAs low) driving C2 low to latch the column addresses
into the column address buffers. Interlock C1 ensures that/he CAS cycle is inactive untilMs is low. The column addresses
are then amplified and drive the column decoders for column selection. With CAO-CA 7 valid, the column address buffers
output a signal to interlock point C3. A delay stage within C3 allows the column decoders time to complete their decoding
before the output of C3 goes low. C3 going low enables the column decoders to access the selected columns (4). Interlock
C3 ensures two things: the column addresses are valid, and decoding is complete before the selected columns are accessed. After selection is completed, data can now either be input or output depending on the
signal timing. Interlocks RC1
and RC2 ensure that the sense amps are active and the proper column is selected before a read or write can take place.
Iii
In the case of a read or read-modify-write cycle, the high logic level on the write line (ijh prevents any transfer into the
data in register by keeping the output of W1 high. The presence of CAS low and the output of RC1 low allows RC2's output
to go low; this clocks the level of Winto register 01. Only in the case of an early write (iii low prior to CAS low), when
the output of 01 is not clocked to a logic one, will the data out register be maintained in the high-impedance state. In any
read cycle, the output of 01 is a logic one and the data out regist~r is enabled although data will not be valid until RAs
and CAS access times are both satisfied.
In a write cycle, the low logic level on Wallows the output of W1 to go' low which latches the data present at D (thus
the latter of either CAs or Iii going low latches the data). The logic level at the output of the data out register will remain
until CAS returns to a high leve!.( When CAS is high, the output will go to a high-impedance state.) Data out reflects the
data read from the cell rather than the new data that is written for read-modify-write cycles.
The RAS low time following sensing complete, is used to restore data to the memory cells currently selected by the word
line (restoration after the desctuctive read). Any data that is changed by a write cycle causes alterations of the sense amplifier
which then stores the new data in the memory cells. When RAS goes high, the word line is turned off and the cells now
hold the data restored from the sense amps. RAS going high initializes a precharge state used to equalize the bit lines by
charging them to full VDD potential. Precharge is necess~ry to ensure the charge on the bit lines is equal on both sides
of the sense amp. Another access cycle may begin once the precharge time has been met.
•
The representation used in Figures 1 and 2 is a simplified logic diagram which does not depict all points of signal interlocking. It does however demonstrate the principle of an interlocked clock scheme. The signal generation and timing becomes
very critical as device delays decrease. In many dynamic RAMs there are over 100 timing signals used to control internal
operations, and these timing signals are generated using delay chains without interlocking. The signal skew resulting from
non-interlocked timing increases device sensitivity to operating conditions and process variations. Although the interlock
clock is transparent to the user, its incorporation on the TMS4164 and TMS4416 offers greater component reliability and
avoids timing race conditions inherent in previous generation DRAMs.
MaS Memory
Applications Engineering
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Texas Instruments assumes no responsibility for infringement of patents or rights of others based on Texas Instruments applications assistance or product
specifications, since TI does not possess full access to data concerning the use or applications of customer's products. TI also assumes no responsibility .
for customer product designs.
9-14
INTRODUCTION TO SURFACE MOUNT TECHNOLOGY
ABSTRACT
The demand for high-density, cost-effective printed circuit
boards has prompted the electronics industry to seek alternative methods to traditional plated-through-hole technology.
One such alternative is surface mounting, a technology traditionally used in hybrid fabrication. The advantages· of surface mounting are numerous but the bottom line is that it
is cost effective and will begin to displace plated-throughhole technology as the a~ailability of surface-moUlit components increases.
lead provides compliance allowing the use of any commercial substrate. Digital, Linear, Gate Array, and MOS devices
will be offered in 18-, 20-, 28-, 44-, 52-, 68-, and 84-pin
packages through TI.
Package Outline
The mechanical data for the PLCCs is given in Figures
1 and 2; their thermal properties are listed in Table 1. The
following general statements apply to the packages:
1. Each of the chip carrier packages consists of a circuit
Texas Instruments is fully supporting the growth of the
surface-mount industry with its line of plastic leaded chip
carriers. An introduction to the surface-mount technology
will be given in this application report.
INTRODUCTION
2.
The post molded leaded chip carrier (pLCC) was
developed by Texas Instruments in 1980 to improve the packing density of ICs on printed circuit (PC) boards and overcome some of the size constraints normally caused by dualin-line (DIP) packages. The PLCC was also designed to be
used under the same environmental conditions as the DIP
without any reliability degradation. The PLCC occupies approximately 40% to 60% of the PC board area of an
equivalent DIP, and requires no through holes (surface
mount), therefore, it lowers the cost on PC boards. Unlike
some surface-mounted packages, TI's PLCC requires no
special PC board material considerations. The design of the
3.
4.
5.
6.
7.
mounted on a lead frame and encapsulated within an
electrically nonconductive plastic compound. The compound withstands soldering temperatures with no deformation, and circuit performance characteristics remain
stable when the devices are operated in high humidity
conditions.
These packages are intended for surface mounting on
solder pads with 1,27-mm (0.050-inch) centers. The
leads require no additional cleaning or processing when
used in soldered assembly.
All dimensions shown are metric units (millimeters),
with English units (inches) shown parenthetically. Inch
dimensions govern.
Lead spacing shall be measured within the zones
specified.
Tolerances are noncumulative.
Lead material CD-155. T60 (Copper Alloy).
Dimple in top of package denotes pin 1.
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0,660 (0.026)
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Figure 1. Plastic Chip Carrier Package (FP Suffix)
9-16
MAX
NO.OF
TERMINALS
20
28
44
52
68
B
A
MIN
9,70
(0.382)
12,24
(0.482)
17,32
(0.682)
19,86
(0.782)
24,94
(0.982)
MAX
10,03
(0.395)
12,57
(0.495)
17,65
(0.695)
20.19
(0.795)
25,27
(0.995)
MIN
8,89
(0.350)
11,43
(0.450)
16,51
(0.650)
19,05
(0.750)
24.13
(0.950)
C
MAX
9,04
(0.356)
11,58
(0.456)
16,66
(0.656)
19,20
(0.756)
24,28
(0.956)
MIN
8,08
(0.318)
10,62
(0.418)
15,70
(0.618)
18,24
(0.718)
23,32
(0.918)
18
MAX
8,38
(0.330)
10,92
(0.430)
16,00
(0.630)
18,54
(0.730)
23,62
(0.930)
17
16
15
14
13
"m
B
25
26
27
A
28
o
4,78 (0.188)
4,06 (0.160)
~
1,14 (0.045)
0,63 (0.025)
2,41 (0.095) MIN
1,27 (0.050) X 45'
NOM
'14(0'045)X45'
NOM
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1,35 (0.053)
1,19 (0.047)
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ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES.
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Table I. Thermal Properties. of Plastic Chip Carriers
NO. OF
PACKAGE
LEADS
DESIGNATION
18
20
28
44
68
FP
FN
FN
FN
FN
OJA (0 C/N)
OJC (0 C/W)
85.4
113.6
76,8
68,0
45,7
13.8
37,1
32.2
20.3
11.4
9-17
J-Lead Advantage
Texas Instruments PLCC packages are constructed with
the I-lead structure due to its superior performance when
mounted on a wide spectrum of substrates ranging from
ceramic to epoxy-glass. This is possible due to the compliancy of the I-lead which compensates for the possible thermal
mismatch between plastic packages and mounting substrates.
More care must be taken when using ceramic leadless chip
carriers mounted on nonceramic substrates in order to prevent solder joint fracturing under thermal cycling. The I-lead
also offers advantages over plastic surface-mount packages
using different lead structures. Figure 3 gives a comparison
of the I-lead used on the PLCC to the "gull wing" commonly used on small-outline integrated circuits (SOlCs)
and "quad packs."
GULL WING
DEVICE AREA (16 L-PIN SOIC) = 111.6 mm 2
(0.173In 2 )
ADVANTAGES
-
DISADVANTAGES
EXTENDS X-Y SIZE
-
PROVEN PROCESS
-
POSITIVE SOLDER 'WITNESS"
-
LEADS SUBJECT TO DAMAGE
-
EASY AUTO-POSITIONING
-
HIGH PIN COUNT PACKAGES IMPRACTICAL
-
NESTED STACKING (PERIPHERAL)
J-LEAD
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DEVICE AREA (18-PIN PLCC) = 98.6 mm2
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DISADVANTAGES
ADVANTAGES
0'
::l
-
PROVEN PROCESS
-
TOTAL PACKAGE-HEIGHT THICKER THAN SOIC
-
LEADS ARE COMPLIANT. USEABLE WITH
-
INFRARED URI REFLOW DIFFICULT
PC BOARD AND CERAMIC SUBSTRATES
-
MINIMUM X-Y SIZE. MAXIMUM BOARD DENSITY
EASY AUTO POSITIONING
-
LEADS WELL PROTECTED
-
EASY REPLACEMENT
-
SOCKETING EASY
-
JEDEC STANDARDS EXIST
STAND-OFF FROM THE BOARD ALLOWS EASY CLEANING
-
LARGEST LINE OF AVAILABLE PACKAGES:
FROM 18 TO 68 LEADS. HIGHER PIN COUNTS UNDER
DEVELOPMENT
Figure 3. Gull Wing Vs. J-Lead
9-18
Area Savings with PLCC
The pe board area savings that can be realized with the
PLee is best demonstrated by a comparison of two Texas
Instruments one· megabyte memory boards (see Figure 4).
The DIP board is eight layers, measuring 279,4 rom
(11 inches) by 355,6 nim (14 inches) with 226 les. The
PLee board is four layers, measuring 165,1 rom (6.5 inches)
by 243,84 mm (9.6 inches) also with 226 les. The savings
that can be realized with the PLee board amounts to 60%
less board area at an overall cost savings of approximately
55 %. This illustrates the viability of surface mount as a low
cost means of improving circuit board density while reducing pe layout complexity.
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A brief description of each step will be given; detailed
descriptions of the various steps can be obtained by component and equipment suppliers and from numerous technical
articles on surface mounting.
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Figure 5. I8-Pin PLCC Footprint
9-20
Solder Paste Application
Solder paste can be applied using several methods: screening through a stencil or stainless steel mesh, pneumatic
dispensing or by hand application with a syringe. Texas
Instruments recommends screening through a stainless steel
screen. The screen mesh must be chosen in accordance with
the mesh of the solder paste to provide an adequate emulsion of the solder paste and to prevent screen clogging. In
general an 80-100 mesh screen should be used with 200 mesh
or finer solder paste particle. There are a number of factors
that need to be considered when selecting a solder paste, a
few key factors are as follows:
1.
2.
3.
4.
Particle size
Particle shape
Percentage of metal content
Temperature range
Component Placement
Two types of vapor phase systems are the batch and the
in-line. The batch system is a two-vapor system that uses a
fluoroinert liquid such as FC-70 for the primary vapor and
a clorofluorocarbon such as trichlorotrifluoroethane (R113)
as the secondary liquid (see Figure 6). The secondary liquid
has a lower boiling point (47.6°C) than the primary liquid
(215°C) thus acting as a blanket to prevent loss of the expensive primary liquid. The in-line system (see Figure 7)
is a single-vapor system using only a primary vapor (such
as FC-70). The batch system is the forerunner of the in-line
and is more suited to development and small production
where the in-line is tailored to a mass production atmosphere
requiring good throughput and minimal operating expense.
Although the two systems are targeted to different markets
their basic operation is the same. Both are capable of single
and double sided surface mount.
Batch System Operation
The components can be placed via several different modes
into the still moist solder paste. In a production environment,
the components are most efficiently placed with an automatic
pick-and-place machine to achieve both speed and accuracy.
Presently, pick-and-place machines can place between 600
and 600,000 components per hour and are priced accordingly. In a research and development environment, hand placement can be adequate due to the forgiving nature of surface
mounting. When a component is placed off center it will tend
to self-align during reflow due to the surface tension of the
molten solder. Naturally there are limits to the amount of
misalignment that can be corrected. Two important aspects
of self-alignment are provision of adequate solder pad area,
and proper placement of the solder pads with respect to the
component.
The PC board complete with components is plated on an
elevator and lowered into the secondary vapor. The elevator
ascent-descent rate and dwell in the two vapor zones can be
preset via the vapor phase machine front panel. The descent
rate and hold time in the secondary zone should be set so
as not to unnecessarily disrupt the secondary vapor blanket
or cause defluxing of the solder paste. Lowering the board
into the 215°C primary zone causes the solder to reflow.
A dwell time of 10-30 seconds in the primary zone is generally sufficient for most PC boards. The dwell time in the
primary zone is a function of the PC board mass. Once the
solder is reflowed, the PC board is raised back into the secondary zone where the molten solder is allowed to solidify.
In the batch system it is necessary to pay particular attention to the ascent-descent rate of the elevator as the disruption of the two-vapor zones will cause unnecessary loss of
the expensive primary liquid.
Oven Drying
In-Line System Operation
As solder pastes have evolved over the past several years,
the drying process following component placement is not
always necessary. In the past, drying was necessary to drive
out the solvents in the solder paste. If the solvents were not
driven out, the formation of solder balls was frequent due
to the out gassing of the solvents prior to reflow. Today
manufacturers of solder pastes report that drying is no longer
necessary when using many of the new solder paste formulations. As a wide variety of solder pastes exists, it is necessary
to consult the manufacturer before determining if drying is
necessary in your process.
The operation of the in-line system is similar to that of
the batch system except that there are no secondary vapor
or dwell times with which to contend. The PC board is placed
on a conveyor belt that transports it through the system at
a constant speed. Passing through the vapor zone the solder
becomes molten and solidifies as it moves toward the systems
exit. Where the ascent-descent rate and dwell time are critical
to the batch system, the conveyor speed is critical to the inline system. The speed at which the conveyor should be set
is also a function of the PC board mass.
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While several methods of solder reflow are available,
vapor phase soldering has been the most successful and is
becoming the industry standard.
9-21
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9-24
Applications Brief
TTL DRIVERS FOR THE TMS4416-15
Some form of drive circuitry is needed when DRAMs are used with processors. such as the Z-80 or Z-8000. One
possible solution involves the use of a precision delay line; however. a more cost-effective and efficient approach
uses TTL devices as drivers. Two versions of TTL driver circuits are shown in Figures 1 and 2. The first figure
shows the drive circuit for a memory array using TMS4416-1 5 DRAMs and the Z-80 processor; Figure 2 shows
the same array configured for use with the Z-8000 processor. Both circuits are designed to drive 256K bytes of
memory arranged in either 8- or 1 6-bit words. They provide all DRAM control signals. address multiplexing. and
refresh address generation. The circuits shown for the Z-80 and the Z-8000 use the hidden refresh provided by
these devices so that refresh/access arbitration is not necessary. Time delays were selected to provide maximum
performance from the TMS4416-15 with off-the-shelf components. (Enhanced operation could be obtained by
hand sel,ecting components for single applications.) A comparison of the two circuits will reve~1 the differences
between the two. The following description applies to both circuits.
The memory array is arranged as 4 banks of 8 TMS4416s. Two TBP18S030 PROMs decode and generate the
control signals for the drive circuit. BAO and BA 1 are used to select which bank of memory will be accessed.
MREQ and ACCESS are NORed and then delayed by 3 inverters to provide a CAS signal. The MUX Signal that
is used to switch the 74S153 multiplexers and propagate the column address to the memories is taken from
the output of the first inverter in the CAS delay. CAS is connected to all the devices in the array. (Since RAS
acts as a chip enable. CAS will only activate the memories in the bank that has RAS active; this keeps the power
consumption of the array lower than using CAS as select logic.) Two CAS drivers are used to reduce the effects
of the capacitive load of the DRAM CAS inputs. (This also improves drive characteristics and reduces noise.)
Seri~s damping resistors have been added to reduce ringing on the address lines. These resistors should be
between 15 and 68 ohms. depending on the circuit board layout. and can be determined by examining the
address waveforms with an oscilloscope and selecting a value that produces the cleanest signal. The desired
8- or 16-bit data word from the active bank is selected using RO. R1. and the READ line. RO and Rl can be
address lines from the Z-8001 or they can be generated from memory mapping logic. If the READ input is low
during an access cycle. the output enable of the TMS4416 will be activated (RDA-RDD); a high input to READ
will select a write output (WRA-WRD). Using this matrix. the memory can be divided into sixteen 16Kx8 or
eight 16K x 16 blocks. The desired word width of the data output will be dependent on the microprocessor
being used. For an 8-bit data bus the two data busses shown in the diagram would be connected in parallel.
Since the Z-80 only directly accesses 64K of memory. bank select logic must be included in this memory system
to provide higher order address lines. The design of the bank select circuitry has been left up to the user. but
might include memory mapping or other logic.
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9-30
TMS4416/7220 GRAPIDCS
As the increased activity in computer graphics grows, the
need for dedicated graphics peripherals and video memory
becomes apparent. The NEC 7220 is currently a good answer
for a high resolution single chip graphics controller. The 7220
provides all of the necessary graphics primatives for line,
arc, and rectangle drawing, as well as area fill routines.
Signal timings are easily adapted with extemallogic to provide the proper memory and video timings, with programmable features allowing the user to do in software what has
typically been implemented in hardware. To take advantage
of the 7220' s wide spectrum of operation requires a memory
that is also well adapted to graphics applications. The
TMS4416 16K x 4 dynamic RAM provides such a memory,
with modularity and bandwidth advantages over 64K x 1
memories. The architecture of the TMS4416 provides an output enable function (relieving the need for databus buffers),
faster access times and a 4X bandwidth improvement over
Xl devices of the same speed. Although 64K x 1 nibble mode
parts out perform standard 64K x Is, they can not match the
bandwidth of the TMS4416 and they require more memory
control circuitry to perform the same function. The modularity of the TMS4416 offers efficient memory usage in many
applications and is well suited for both single and multi plane
memory systems.
This application report describes a design coupling the
7220 and the TMS4416 in a single plane, bit mapped graphics
system. The main objective is to provide a detailed example
of the necessary memory interface. While the design does
not use all of the capabilities of the 7220 (DMA, Zoom, Light
Pen, etc.) .it does provide an easily adaptable example that
can be tailored to many applications. This particular system
can be switched between a 512 x 240 noninterlaced and
512 x480 interlaced display by changing a single 7220
parameter byte. To simplify the host interface an existing
Z80A based computer was used to communicate to the 7220
in a Multibus* system, with all the programming done in
BASIC.
To evaluate the design, calculations of the memory and
video requirements will be given with a brief discussion of
key points of interest. Measured drawing times for an arc
and area fill are included to provide some feel for the drawing speed of the 7220.
Referring to the schematic (Figure 1), the graphics board
can be divided into five functional blocks: Multibus* interface, 7220, memory control, display memory, and video output circuitry. Four of the blocks will be discussed while a
detailed understanding of the 7220 is left to the reader (NEC
provides a 7220 Design Manual which is essential to understand 7220 operation).
A simple Multibus interface has been implemented for
control of the graphics system. The low order eight bits of
the data bus are buffered with a 74LS640 transceiver. This
transceiver is controlled by 10RC and output YO of the
74LS138 (board select logic). The lU) and WR signals are
derived from 10RC and rowc in conjunction with the board
select. The XACK signal, required to terminate all liD operations is generated by using the board select to enable a
74LS241 whose input is tied to ground. The Multibus signal
timings were sufficient to meet the 7220 specifications
without the use of complicated logic.
The memory array is made up of four TMS4416s providing 262,144 pixels. With the CAS circuitry shown, the
memory space can be upgraded to sixteen TMS4416s for
1,048,576 pixels which allows the maximum display resolution (1024 x 1024) of the 7220 to be implemented. The
TMS4416 offers improved modularity over the 64K xl
(which relates to less wasted memory space) and is well
adapted for multiplane memory systems. A four plane color
system of 512 x 512 display resolution requires sixteen 64K
DRAMs. For the TMS4416 application, the memory breaks
into four physically separate planes which are simultaneously
accessed once per display cycle. With 64K x Is, the four
memory planes reside in the same physical memory, and require four separate accesses to memory per display cycle.
This significantly reduces the obtainable bandwidth and also
requires the addition of complex control circuitry. The output enable function and common liD of the TMS4416
alleviate the need for databus buffering further reducing the
circuit component count.
The memory control timing is generated by dividing the
dot clock with a 74S163 and using the appropriate outputs
to clock several 74LS74s for proper placement of the memory
control signals. This approach may seem complicated,
however it allows maximum flexibility in generating the control signals by the choice of the clock connections. The falling edge of ALE takes RAS low, latches the memory addresses and enables the 74LS74s in the memory control circuitry (see Figure 2). On the next rising edge of2 xWCLK
(edge A), MUX goes low switching the memory addresses
from row to column via two 74S157s. The row addresses
correspond to 7220 addresses AD-O through AD-7 and the
column addresses correspond to AD-8 through AD-13. The
next rising edge of clock A (edge B) takes CASffi low.
CASSTB is then used in conjunction with AD-14 and AD-15
to derive four CAS signals through a 74LS139 for easy
memory expansion. It is necessary to select the memory with
CAS instead of RAS, because the 7220 does not provide a
status indicating the type of memory operation to be performed (display, refresh, or RMW). (Normally RAS is used for
memory selection to reduce system power consumption and
noise induced by RAS switching currents.) The rising edge
of clock C (edge C) after CAS, takes the memory output
enable (G) signal low. The G signal is controlled such that
it is only active on display and RMW cycles; for refresh
cycles, IT is held high by the 7220 DBIN and BLANK
signals. Generating four CAS signals and a single G signal
*Trademark of Intel Corporation.
9-31
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Figure 1. TMS441617220 Interface
allows the use of multiple rows of memory since both CAS
and G have to be low for the TMS4416 outputs to be active
(see TMS4416 operation, 1982 MOS Memory Data Book).
The cycle is terminated by the rising edge of ALE (edge G).
On RMW cycles, the 7220 uses the DBIN signal to gate
data from the memory onto the bus signifying the read operation. The rising edge of DBIN is then used to disable the
G signal terminating the read portion of the cycle (see
Figure 3). The 7220 does not provide a separate write signal
so the memory control circuit must use the presence of DBIN
to generate the write signal. This is accomplished by shifting DBIN two clock C cycles (edge E) with two 74LS74s.
Again the rising edge of ALE terminates the memory cycle
(edge G).
The 7220 runs at a relatively slow clock speed (1.4 MHz)
in this design allowing the use of Low Power Schottky components for most of the memory control circuitry. The
necessary memory calculations given below show the actual
margins and also provide an easy means for determining the
maximum speed of the design with Schottky components.
The critical memory timings to be covered are: RAS
precharge, row address setup and hold, CAS access, data
valid to write enable time and refresh interval.
CAS Access Time
A. Display
tCAC = 7(tDCLK) - tPLH(74S163)
- tPHL(74LS74) - tPHL(74LS139)
- tsu (74S299)
where: tDCLK = Dot clock cycle time
thus:
tCAC = [7(88) - 15 - 40 - 33 - 7) ns
= 521 ns
B. RMW cycles
tCAC = 5.5(tCLKA) - tPHL(74S04)
- tPHL(74LS74) - tPHL(74LS139)
- tOIs
where: tCLKA = Clock A cycle
tOIs = Input data setup to 2 x CCLK (MIN,
7220 Spec)
thus:
tCAC = [5.5(176) - 5 - 40 - 33 - 40) ns
= 850 ns
Data Valid to Write Enable
RAS Precharge Time
tDS
tRP = tRW - tS(74LS08)
where: tRW = ALE width (MIN, 7220 Spec.)
ts = Skew between tpHL and tpLH, 74LS08
thus:
tRP = [113(705) -10) ns
= 225 ns
=
112 (tcLK) - tAD - tPLH(74S04)
+ tPLH(74LS74)
thus:
tDS = [112(705) - 5 - 130
= 223.5 ns
+ 6) ns
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Row Address Setup Time
tASR = 1I2(tCLK) - tAD - tpLH(74LS373)
- tPLH(74S157) + tRF
- tPHL(74LS08)
where: tCLK = 2 x WCLK cycle time
tAD = Address/data delay from 2 x CCLK
(MAX, 7220 Spec.)
tRF = ALE delay from 2 x CCLK (MIN, 7220
Spec.)
thus:
tASR = [1/2(705) - 130 - 18 - 7.5 + 20
+ 4) ns
= 221 ns
Row Address Hold Time
tRAH = 1I2(tCLK) - tPHL(74LS08)
+ tPLH(74LS74) + tPHL(74S157)
thus:
tRAH = [1/2(705) - 20
= 344.5 ns
+ 6 + 6) ns
For this circuit the least significant address lines correspond to the DRAM row addresses which are incremented
every display cycle. This provides a refresh rate given by:
Refresh Interval = (256/number of display words)
x line time
= (256/32) x 63.5 p.s
= .5 ms
Therefore the memory is refreshed by normal display
accesses and the 7220 refresh feature is not needed for this
design.
A comparison of the previous calculations to the DRAM
specification indicates there are no memory speed restrictions for the design. To attain the maximum speed of this
particuI'ar design, Schottky components may be substituted
and the appropriate parameters placed into the above equations to determine the maximum dot clock frequency. By using high performance logic, a dot clock rate of approximately
22 MHz can be used.
9-33
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DOT
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CLOCK A
CLOCK C
2 xWCLK
RAS (ALE)
MUX
CAS
G
LOAD
--------------------------------------~--~
Figure 2. Display And Refresh Cycle Timing
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Figure 3. RMW Cycle Timing
9-34
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The video output circuitry closely resembles that provided in the 7220 Design Manual. The major difference being the manner in which the 74S299 load pulse is generated.
It was decided to use the ripple carry out of a 74S163 instead of gating the clock outputs together. The CAS signal
enables the 74S163 and six dot clocks later (edge F) the ripple carry out will go high (see Figure 2) providing a video
load pulse at the end of the display cycle (edge G). This
reduces hardware and provides an easy means for varying
the position of the load pulse within the memory cycle if
necessary. Some applications may require the video load
pulse to occur earlier in the display cycle which is accomplished by changing the input strapping of the 74S163.
A video load pulse will occur on every memory access;
however, on refresh and RMW cycles, the display is blanked preventing any disturbance of the display. Since the first
word of video information on each horizontal scan is not valid
until the end of the first display cycle, video unblanking must
be delayed for one display cycle. This is accomplished by
clocking the 7220 BLANK signal with the NAND result of
the inverted dot clock and ripple carry out through a 74S74.
The video is then synchronized with the dot clock and output to the monitor. A 74LS123 is used to provide the proper
horizontal and vertical drive signals to the monitor. Although
the 7220 can be programmed for the horizontal sync width
and the vertical sync width, some monitors require long drive
times that can only be implemented with external logic.
Providing the correct video information to the monitor
requires several calculations to determine the necessary
parameters that must be supplied to the 7220 upon initialization. The 7220 Design Manual goes through detailed calculations for determining these parameters when the designer is
in the specification stage of a design. For this design the
monitor specifications and dot clock rate were assumed and
the other parameters derived accordingly. The necessary
specifications and calculations are given below.
Horizontal frequency = 15.75 kHz
Vertical frequency = 60 Hz
Horizontal blanking = 11 p.s nominal
Vertical blanking = 900 p.s nominal
Dot clock = 11.34 MHz
2 x WCLK = 1.42 MHz (Dot clocle/8)
Word time = 1.41 p.s [2(1/2 xWCLK)1
Line time = 63.5 p.s (lIHorizontal frequency)
Pixel time = 88.18 ns (lIDot clock)
From the line time and pixel time, the total number of
pixels per horizontal scan can be calculated.
Pixels
= tLINE/tPIXEL
= 63.5 Its/88.18 ns
= 720
The total number of words per horizontal scan is given
by:
WT
= Pixels/16
= 720116
= 45
(Since the 7220 uses a 16-bit word)
The total word count is then divided between displayed
words and blanked words. For the monitor used, the only
restriction on the horizontal parameters is that the sum of
horizontal front porch, back porch and sync be approximately
equal to the nominal horizontal blanking time (11 its). The
horizontal drive to the monitor is set by the 74LS123. A
horizontal resolution of 512 pixels would require 32 display
words and leave 13 words for horizontal blanking. Setting
Horizontal Back Porch (HBP) = 5, Horizontal Front Porch
(HFP) = 5, and Horizontal Sync (HS) = 3 meets all 7220
constraints except for light pen use (requires HFP > 6
words), and also satisfies the monitor horizontal blanking
time.
Horizontal blank
13 x 1.41 itS
18.33 itS
Calculations to determine the vertical blanking parameter
must also be made.
Total number of lines = (l/vertical frequency)/line time
= (1160)/63.5 its
= 262.3 (use 263)
The total number of lines is also broken into active and
blanked lines. In this application it was desired to neglect
aspect ratios and display as much on the screen as possible
and stay within the monitor specifications. For this reason,
it was decided to display 240 lines and blank 23 lines for
512 x 240 noninterlaced and 512 x 480 interlaced display
resolution. Again the vertical drive is set by a 74LS123 and
there are no restrictions placed on the breakdown of the vertical blank parameters by the monitor or the 7220, allowing
random division of the 23 blanked lines. The following
parameters were chosen: Vertical Back Porch (VBP) = 3
lines, Vertical Front Porch (VFP) = 2 lines, and Vertical
Sync (VS) = 18 lines.
Vertical blank
=
Blanked lines x one line time
= 23 x63.5 itS
= 1.46 ms
Several points of interest relating to the choice of the
horizontal and vertical parameters are given in the following paragraphs.
A. Dynamic RAM refresh, if necessary, is only done during horizontal and vertical sync which needs to be long
enough to allow sufficient memory refresh.
9-35
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B. If dynamic RAM refresh is enabled, then drawing can
. only be done during front and back porch times. This
can degrade drawing time significantly if these times are
short.
C. To maximize the drawing time and reduce wasted cycles,
the horizontal parameters should be chosen in accordance with memory refresh requirements. When
memory refresh is needed, the horizontal front and back
porch parameters should be selected as multiples of 2
word times (one RMW cycle equals 2 word times) if
possible.
Example:
For HBP = 5, two RMW cycles (4 word times)
would be performed and one cycle (1 word time)
would be wasted. Choosing HBP'equal to four
or six eliminates the one wasted state. Of course,
minimum 7220 requirements must be met also.
These parameters can then be translated into a format
needed to program'the 7220 (see Table II). Writing these
commands and parameters to the correct 7220 address location (AO = 0, Parameter into FIFO; AO = 1, Command
into FIFO) results in setting the video control commands,
ends idle mode and unblanks the display. Upon initialization, the 7220 can then be programmed for drawing using
the various graphics prhnatives. The 7220 Design Manual
contains numerous examples illustrating the necessary steps
for drawing. To switch to 512 x480 interlaced mode
parameter PI of the Reset command needs to be changed
to IB hex (see Table II) and the Cursor and Character
Characteristics (CCHAR) command needs to be set appropriately (Blink Rate parameter greater than zero).
The parameters for this design were choosen for no
refresh operation and to support as many 7220 operating
modes as possible. Table I gives a quick summary of the
video parameters.
Table I. Video Parameters
Parameter
Active Words
Blanked Words
HS
HBP
HFP
Value
32
13
3
5
5
Parameter
Active Lines
Blanked Lines
VS
VBP
VFP
Value
240
23
18
3
2
Table II. 7220 Initialization Data
Commands
And
Parameters
Reset
P1
P2
P3
P4
P5
P6
P7
P8
VSYNC
START
Address AO
,1
0
0
0
0
0
0
0
0
1
1
Data (Hex)
00
12*
1E
42
12
04
02
FO
OC
6F
68
Function
Reset to idle state
Active words-2
HS-1, VS low bits
VS high bits, HFP-1
H8P-1
VFP
Active display lines
V8P
Master video sync
End idle mode
·Set for graphics mode, noninterlaced, no refresh, drawing during retrace only; for interlaced operation Pl =, IB (hex),
9-36
To illustrate the drawing speed of the 7220, drawing times
for arc and area fill routines with and without memory refresh
were measured. The 7220 also provides Flash Mode drawing where drawing is done during display and retrace. While
this yields extremely fast drawing times there is considerable
disturbance to the display when drawing is in progress. The
drawing time results are shown in Table III.
This Application Report has demonstrated how a
designer might incorporate the TMS4416 into a graphics
system with the 7220. No attempt has been made to detail
the interface or communication between the host processor
and the 7220 as so many variants exist (see 7220 Design
Manual). The TMS4416 requires minimal circuitry to
generate a dense, low cost, high performance memory array for the 7220.
MOS Memory
Applications Engineering
Table III. Drawing Times
Routine
Arc
Radius = 96
Area Fill
x = 400
Y= 200
Pixels Drawn
Refresh
No Refresh
Flash Mode
69
1,079 p,s
704 p,s
191.8 p,S
80,000
926:9 ms
686 ms
227.4 ms
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9-37
•
9-38
Applications Brief
TMS4416/TMS4500A EVALUATION BOARD
This application note illustrates memory system implementation using the TMS4416/TMS4500A evaluation
board (Photo shown in Figure 1). The board measures 3" X 5.5" and is populated with a TMS4500A DRAM
controller imd 16 TMS4416s (16K X 4 Dynamic RAMs); this system provides for 128K bytes of static appearing memory and requires a single 5-volt supply. The interconnection bus at the board edge and the flexibility of
the TMS4500A makes the board adaptive to almost any system. This board was developed by Texas
Instruments to allow construction of several processor systems without redesign of the memory section for each
system. It is beyond the scope of this article to cover every microprocessor interface, although several popular
microprocessor interfaces are covered in the TMS4500A User's Manual.
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FIGURE 1-TMS4416/TMS4500A EVALUATION BOARD
9-39
The TMS4416/TMS4500A board is arranged as two rows of 8 devices (see Figure 2). Row 0 and Row 1 are selected by
the RASO and RAS1 sign,als, respectively. The board is then subdivided into four blocks of 32K bytes that are controlled
by the WR1-WR4 and RD1-RD4 signals. The strapping of WR1-WR4 and RD1-RD4 allows the board to be configured as
32K X 32 bits, 64K X 16 bits, or 128K X 8 bits. Table 1 shows the typical strapping needed for the various word widths.
Several examples of how the WR and RD signals can be used will show the versatility of the TMS4416/TMS4500A board.
BLOCK 0
BLOCK 1
I
TMS4416
-
--
RASO
TMS4500A
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--
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ROW 0
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WR4
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FIGURE 2 - TMS4416/TMS4500A BOARD lAYOUT
TABLE 1 - READ AND WRITE SIGNAL STRAPPING CONFIGURATION
CONFIGURATION
128K X 8
64K X 16
•
32K X 32
NOTES:
1.
2.
3,
4.
SIGNAL STRAPPING
SWR1
SRD1
SWRl
SRD1
= WR1, 'S"WR2 = WR2, 'S"WR3 = WR3. SWR4 = WR4
= RD1, SRD2 = RD2, SRi5'3 = RD3, SRD4 = RD4
= WR1 = WR2. SWR2 = WR3 = WR4
= RD1 = RD2. SRD2 = RD3 = RD4
"SWR1 = WR1 = WR2 =wib = WR4
SRi5'1 = Ro1 = RD2 = RD3 = Ro4
TYPE OF CONTROL
Separate Control
Combined Pairs
All Combined
WRX = Write signal for any block.
RDX = Read signal for any block.
SWRX = User supplied system write signal.
SRDX = User supplied system read signal.
The REN1 input on the TMS4500A selects which row of devices is selected by controlling the RAS (Row Address Strobe)
signals (REN1 low selects RASO, REN1 high selects RAS1). When a row of memory is accessed (RASO low or RAS1 lowl. all
the devices in that row are active which allows the user to manipulate each half-block within a row separately or collectively.
As an example, strapping WR1-WR4 and RD1-RD4 for 64K X 16 operation as shown in Table 1 combines the 32-bit data
bus to form two 16-bit data busses that can be used in 16-bit systems as shown in Figure 3. The I/O function is controlled by
the combination of WR1-WR2, RD1-RD2 (Blocks 1 and 2) and WR3-WR4, RD3-RD4 (Blocks 3 and 4). It is then possible to
read and/or write to each block by appropriate control of the WR and RD signals.
9-40
TMS4500A
BLOCKS 3 AND 4
BLOCKS 1 AND 2
FIGURE 3 - 64K X 16 CONFIGURATION
Another example takes advantage of having a 32-bit word available but only an 8-bit data bus. To take advantage of this, a
74LS139 selects the WR and RD signals and 00-07 of each block are tied together to form an 8-bit bus (See Figure 4). A
write cycle enables 1 G allowing the 1 A and 1 B signals to select the block to be written to. A read cycle enables 2G allowing
the 2A and 2B signals to select which block will be read. On a read cycle, the 2A and 2B signals can be sequenced, causing
successive activation of the RD lines to rapidly access all 32 bits over the 8-bit bus (See Figure 5). This configuration makes
full use of the output enable (<3) function on the TMS441 6 to decrease memory access times. Similarly the WR lines can be
manipulated to accomplish fast writes into the DRAM array.
-
RASO
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BLOCK 1
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FIGURE 5 -
9-48
REFRESH AFTER ACCESS (HIDDEN REFRESH)
Figures 6 and 7 show how the edge timings of ALE and ACX described in the previous examples affect the RAS and CAS
timings on access grant cycles. An access grant cycle occurs when ALE goes low during a refresh cycle. In this case the
timing of ALE low to ACX low determines the timing of RAS and CAS low with respect to ClK. If ACX falls more than
20 ns after ALE during a refresh cycle, the TMS4500A will follow the timing shown in Figure 6. If ACX falls prior to or
less than 2 ns after ALE during a refresh cycle, the TMS4500A will follow the timing shown in Figure 7. The difference
between the two timing diagrams is the CAS timing with respect to ClK. On access grant cycles, the falling edge of ALE
causes the ROY signal to go low; ROY low is generally used to hold off the processor until the refresh cycle is complete.
The refresh timings of RAS, CAS, and MAO-MA 7 are identical to the fifth example with respect to ClK edges A, B, C,
and O. ClK edge E in Figures 6 and 7 terminates the refresh cycle and initiates the access grant cycle by bringing the ROY
signal high and the RAS signallow. 1 In Figure 6 (ACX falling more than 20 ns after ALE), the CAS signal is timed from
the subsequent falling edge of ClK after the access grant cycle is initiated (ClK F) and will go low tCl-CEl later. In Figure 7
(ACX falling prior to or less than 2 ns after ALE), the CAS signal is timed from the rising edge of ClK that initiated the
access grant cycle (ClK E) and will go low tCH-CEl later. This diagram shows that CAS will fall approximately one-half
ClK cycle earlier in Figure 7 than CAS in Figure 6; this timing arrangement decreases the access time after refresh. In both
of these access grant examples, the cycle is terminated by the low-to-high transition of ALE and ACx as described above.
ClK
ALE
ACX
RAS
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FIGURE 1 - TMS99105A/TMS99110A AND MEMORY MAPPING CIRCUITRY (3 MHz VERSION)
M5H
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In the high-speed version, the 7 4LS61 0 memory mapper has been added to replace the function of the 7 4S 189 bipolar
RAMs. Also, additional logic has been incorporated to allow the TMS99000 control signals to access dynamic memory
at the higher speed. ALATCH is gated with a D-type flip-flop that allows ALE to fall after the falling edge of CLOCK fOllowing ALATCH going low. This allows the DRAMs to meet their specified RAS precharge time. A schottky flip-flop and a lowpower schottky inverter are used to ensure that ALE falls at least 10 ns after CLOCK does. Since the TMS4500A will not
generate READY in time for the TMS99000, this signal must be generated externally. This is done by detecting SLOMEM
'- and using it to force READY low. SLOMEM is sampled by the TMS99000 READY input only when ALE is high so as to
prevent placing the TMS99000 in an endless wait state. Once READY has initially gone low, it is kept low on DRAM memory
cycles by RDY from the TMS4500A. It is finally returned high on the rising edge of CLOCK following RDY returning high.
This will insert two wait states into each dynamic memory access cycle and one wait state for other slow memory (such
as EPROM) cycles. If high speed static memory is used in the system, it should use SLOMEM = logic 1 status as a chip select .
Next, in order to use the TMS4500A as an interface between dynamic memory and any processor, the following specifications should be checked:
1.
2.
3.
4.
5.
6.
Refresh time
Memory precharge time
ALE to CLK relationship
Row address setup and hold times
Data valid to write enable time
Read access time.
First, the specifications for the medium-speed version will be checked to determine the memory speed, strap selection,
and any logic modifications that might be necessary. For this example, assume that the TMS99000 has an input CLKIN
frequency of 12 MHz (CLKOUT = 3 MHz).
9-53
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RS2
MOS
MSG
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B
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FIGURE 3 - TMS99105A/TMS99110A AND MEMORY MAPPING CIRCUITRY (5 MHz VERSION)
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LJ
\~
__~r-\~_____ ~
\
I
--------~~;~---------{ ~!~~
DO-D1S
c
o
.~
CO
FIGURE 4 - TIMING DIAGRAM FOR TMS99105A OR TMS99110A AND TMS4500A INTERFACE 15 MHz VERSION)
E
~
o
'to-
r
CLOCK
-...
-1
WRITE
READ
RDY
ALE
8
A14-A7
2
A6-AS
-
ACW
RASO
ACR
CAS
TMS4164
_lx16)
RAS
ALE
REFREQ
~C.
W
Q
r---
~
tt-tl
I>0Io
f/)
c
o
.~
.....
~~
1:.10
AO-A7
r--_
i>oI.
i>oI.
~~
~
,
8
CA2-CAS
2 MSE-MSF
CA6-CA7
3
MSE-MSG
MSG
-
r
'M~'''_
~~m
W
FSO
MAO-MA7
FSl
8
".M
TWST
~
-_
.~
-
Q.
Q.
«
•
-~
-':.6 U- ~
__
~
~~
Df-l~I---
Of-
~
~~
t-"
I-I-f-
;~~~I-""'I-I->-_
~~~~~
16
~~~~~~
--c::;:_
~~
"'=.-t:;:
See Text
-
I>0Io
RAs'lx16)
RASl
RENl
CS
CO
r--_
-'" r-~~
CAO-CAl
4
MSA-MSD
D15-DO
0-
-
RDY
-~
CAs
..5
RAO-RA7
10
A14-A5
ClK
TMS4S00A
16
"C~
16
FIGURE 5 - TMS4500A AND 128K WORD DYNAMIC MEMORY USING TMS4164s
9-55
I"
UO!JewAoJul SUO!Je3!!ddy
co
L-
en
(J)
--..
CLOCK
----
WRITE
READ
ROY
ALE
--
--
8~
10
A14-A7
--
T
,
.-.
A6-A5
.-.
4
,
MSA-MSO
MSE
~
..
.-
-
2 ...
MSE,MSF
ACW
RASo
RAS
CAS
CAs"
CAO
ROY
CA7
ALE
REFREQ
N_C.
r
-..
N.C.
N.C.
G
TMS4418,x4I-
- :::: ~
~
•
P""-
..
..
--
1.;
~
...
R/W
CA3-CA6
•
--
I
1
8
TMS4416(x4)
---
RAS1
REN1
MAO-MA7
FSO
FS1
TWST
,I
I
I,
•
-
I-
f--f-o
~
RAS
CAS
OQ1-0Q4 I -
W
G
118
TMS4416(x4)
~
~
~~
10-
74lS155
A
2YO
.... G
---
L
~
2Y1
2Y3
1G
1YO
2G
1Y1
1C
lY2
2C
16 ~
~}
_
.:
CAS
W OQ1-DQ4
AO-A7
AO-A7
f--
RAS
L
1Y3'l
015-00
~~
AO-A7
I-
2Y2
DRAMCS'
~
r
B
MSG
~
G
,.8
*
MSF
~
8
CA1-CA2
CS
RAS
CAS
OQ1-0Q4 10W
AO-A7
8 If
RAO-RA7
.... f-~
V;OQ1-0Q4
ACR
_
A14-A5
2~
TMS4416(x4)
TMS4500A
ClK
FOR EXPANS'ON Of
ADD'l 64K WORDS
-
• See Table 1 for Strap Configuration.
FIGURE 6 - TMS4500A AND 64K WORD OF MODULAR DYNAMIC MEMORY USING TMS4416s
J
~
f--
~
f--
~~
1.
Refresh Time
TABLE 1 -
STRAP CONFIGURATION
WAIT
STATES
STRAP INPUT MODES
CLOCK
FOR
+
MINIMUM
CYCLES
MEMORY
REFRESH
CLK FREQ.
REFRESH
FOR EACH
TWST
FS1
FSO
ACCESS
RATE
IMHz)
FREQ.lkHz)
REFRES~
l
l
l
l
l
l
H
H
Lt
H
0
0
0
0
EXTERNAL
elK
elK
elK
+
H
H
H
H
l
l
H
H
l
H
1
1
1
1
elK
elK
elK
elK
+
l
H
l
H
+
+
+
+
+
-
REFREQ
31
46
61
1,984
2,944
3,904
64 - 95t
64 - 85t
64 - 82§
4
3
3
4
46
61
76
91
2,944
3,904
4,864
5,824
64 - 85t
64 - 80*
64 -7H
64 ~ 88+
3
4
4
4
."
This strap configuration resets the Refresh TImer circui.try.
Upper figure in refresh frequency is the frequency that is prodllced if the minimum elK frequency of the next select state is Ilsed.
Refresh frequency if ClK frequency is 5 MHz.
Refresh frequency if ClK frequency is 8 MHz.
From Table 1 of the TMS4500A data sheet, there are two strap selections that would be appropriate for a 3 MHz clock
frequency. One selection inserts a wait state on every memory access while the other does not. Assuming that no wait
states will be necessary, select the strap input: FSO = TWST = 0 and FS1 = 1. This will yield a refresh rate of (3 MHz)/46
or approximately 65 kHz. Each refresh will take 3 clock cycles.
2.
Memory Precharge Time
c
o
(RAS precharge)
"';::
The memory precharge time must be calculated for access, refresh, and access grant memory cycles to ensure the minimum
RAS precharge time is satisfied.
a.
m
E
~
~
.5
Access Cycles
en
c
o
The precharge time on access cycles is given by:
"~
where
tRP
tc2/4+td1 +tAEL-REL* - td7 - tACH-REH - tt(REH)
tRP
RAS precharge time
tc2
CLKOUT period
td1
Delay from ALATCH low from reference line (ry1AX,99000 Spec.)
CJ
=&
c.
~
tc2/4 + 10
tAEL-REL
thus
Time delay, ALE low to RAS starting low (MAX, 4500A-20 Spec. *)
AD control release delay (MAX,
td7
WE,
tACH-REH
Time delay, ACX high to RAS starting high (MAX, 4500A-20 Spec.)
99000 Spec.)
tt(REH)
RAS rise time (MAX, 4500A-20 Spec.)
tRP
(333/4 + 333/4 + 10 + 36 123 ns RAs precharge time.
30 - 40 -
20) ns
This value should otherwise be a minimum value; however as all propagation delays on a given chip will tend to track each other, the maximum
value is multiplied by a skew factor to reflect variations in same-chip propagation delays. The skew factor used here is 0.9. AU values (followed
by an asterisk) are obtained by multiplying the specified maximum value by 0.9.
9-57
b.
Access Grant Cycles
The precharge time for access grant cycles is given by:
where
thus
c.
+
tRP
tc2
tCH-REl
Time delay, ClK high to access RAS starting low (MAX, 4500A-20 Spec. *)
tCH-REl * - tCH-RRH -
tCH-RRH
Time delay, ClK high to refresh RAS starting high (MAX, 4500A-20 Spec.)
tRP
(333
+ 63 - 45 - 20) ns
tt(REH)
= 331 ns RAS precharge time
Refresh Cycles
The precharge time for refresh cycles is given by:
+ tCH-RRl * - td7 - tACH-REH - tt(REH)
tRP
1.5 (tc2)
where
tCH-RRl
Time delay, ClK high to refresh RAS starting low (MAX, 4500A-20 Spec. *)
thus
tRP
[1.5(333)
+ 54 - 30 - 40 - 20] ns
= 464 ns RAS precharge time
ALE to elK Relationship
3.
ALE low transition must not occur within 10 ns of the ClK low transition. Since the TMS99000 strobes ALATCH Iowan
the rising CLKOUT edge, this criterion is satisfied.
4.
Row Address Setup and Hold Times
The row address, column address, REN 1 and CS inputs must all be set up and stable no later than 10 ns prior to the falling
edge of ALE. The latest of these signals will be CS which must propagate through all of the memory decode logic. The
row address setup time for the 4500A then is given by:
l>
'C
"2-
where
C;"
+ twH3 - td3 - t p ('S373) - t p ('S189) - t p ('S138)
tAV-AEl
td2 *
tAV-AEl
Setup time, row, column, REN1, CS valid to ALE starting low (MIN, 4500A-20
Spec.)
Q)
r+
o·
td2
Delay to ALATCH high from reference line (MAX, 99000 Spec. *)
en
t w H3
ALATCH pulse width high (MIN, 99000 Spec.)
-h
td3
Delay to address valid from reference line (MAX, 99000 Spec.)
3
t p('S373)
Propagation delay, data input to output (MAX, 74S373 Spec.)
r+
t p('S189)
Propagation delay, address input to output (MAX, 74S189 Spec.)
t p('S138)
Propagation delay, select input to output (MAX, 74S138 Spec.)
tAV-AEL
[13.5 + (333/4 - 15) - 15 - 13 - 35 - 12] ns
6.8 ns setup time from CS to ALE starting low.
:;:,
;0
~
Q)
o·
:;:,
•
thus
The setup time from row address valid (at the DRAMs) to RAS starting low must also be considered. This is given by:
tsu(AR)
where
•
+ tAEl-REl * - td3 - t p ('S373) - t p ('S189) - tRAV-MAV
t§u(AR)
Setup time, row address valid to RAS starting low
td1
Delay to AlATCH low from reference line (MIN, 99000 Spec.)
tAEL-REl
Time delay, ALE low to RAS starting low (MAX, 4500A-20 Spec. *)
td3
Delay to address valid from reference line (MAX, 99000 Spec.)
Multiply the specified maximum value by 0.9.
9-58
td1
t p('S373)
thus
Propagation delay, data input to output (MAX, 74S373 Spec.)
t p('S189)
Propagation delay, address input to output (MAX, 74S189 Spec.)
tRAV-MAV
Time delay, row address valid to memory address valid (MAX, 4500A-20 Spec.)
tsu(AR)
[(333/4 + 10) + 36 - 15 - 13 - 35 - 55) ns
16 ns row address setup time for the DRAMs.
The row address hold time is guaranteed by the TMS4500A for -12, -15, and - 20 speed range devices.
5.
Data Valid to Write Enable
Since CAS is initiated by the write enable signal, all write cycles are necessarily early write cycles. Therefore, we will calculate
the setup time for data valid to CAS starting low which is given by:
tsu(D)
where
thus
6.
tAEL-CEL + td9 - td1 - td8
tsu(D)
Setup time, write data valid to CAS starting low
tAEL-CEL
Time delay, ALE low to CAS starting low (MIN, 4500A-20 Spec.)
td9
Delay to WE from reference line (MAX, 99000 Spec. *)
td1
Delay to ALATCH low from reference line (MAX, 99000 Spec.)
td8
Delay from ALATCH low to valid write data (MAX, 99000 Spec.)
tsu(D)
[75 + (333/4 + -18) - (333/4 + 20) - 35) ns
38 ns setup time from data valid to CAS starting low.
Read Access Time
The maximum access time allowable from CAS to data valid on memory read cycles is given by:
where
thus
talC)
tc2 - tc2/4 -
talC)
Access time from CAS to data valid
tc2
CLKOUT period
tc2/4
Delay from CLKOUT falling to reference line (99000 Spec.)
c
o
.~
td1 - tAEL-CEL - tsu2
Delay from reference line to ALATCH low (MAX, 99000 Spec.)
tAEL-CEL
Time delay, ALE low to CAS starting low (MAX, 4500A-20 Spec.)
tt(CEL)
CAS fall time (MAX, 4500A-20 Spec.)
tsu2
Data setup time (to CLKOUT falling) (MIN, 99000 Spec.)
talC)
[333 -
-1~3 ~s.
E
....o
td1
333/4 -
CO
(333/4
.5
tJ)
c
o
.~
CO
.~
Q.
c.
~
+ 20) + 20) - 200 - 25 - 25) ns
'.
...
=
.
.
. d
b
d •
Now that the SIX specifications on the deSign criteria checklist have been examined, the values obtalne can e compare
to those required for the TMS4164. This comparison shows that three criteria constrain design and memory selection. These
criteria are RAS precharge, CS valid to ALE starting low, and read access from CAS. The RAS precharge time of 123 ns
means that only -20, -15, or -12 speed range devices may be used. Next, 3.2 ns of delay must be added to the ALE
signal to ensure that CS is valid 10 ns before ALE starts low. This delay is achieved by inserting a buffer between ALATCH
and ALE. Finally, a negative access time from CAS requires that a wait state must be inserted on each memory access
cycle. By adding one CLKOUT period (set TWST = 1, FSO = FS 1 = 0) to the calculated memory access requirement,
the read access cycle time (from CAS) with one wait state inserted is given by:
•
Multiply the specified maximum value by 0.9.
9-59
where
+
ta(C)
(-103
tp(BFR)
Buffer propagation delay, input to output of the ALE buffer. (MAX, Spec.)
tc2 - tp(BFR)) ns
Using the worst case CAs access time for TMS4164-15 DRAMs (ta(c) = 100 ns), the maximum allowable propagation
delay for the buffer can be determined:
tp(BFR)
(-103
(-103
130 ns
+ tc2 + talc)) ns
+ 333 -100) ns
This value must be greater than the maximum propagation delay for the ALE buffer.
The specifications for the high-speed version will be evaluated next. In this version, ALE is extended to meet the RAS precharge
requirement for -15 devices. This also gives sufficient address setup time to use the 74LS61 0 memory mapper. The memory
mapper performs essentially the same function as the bipolar RAM array in the previous example, but incorporates the control signals that are necessary on-chip. For more information regarding the 74LS610, refer to TI Application Brief entitled
"Memory Mapping Using the SN54/74LS610 Thru SN54/74LS613 Memory Mapper." For the following example, assume
that the TMS99000 has an input CLKIN frequency of 20 MHz (CLKOUT = 5 MHz).
1.
Refresh Time
From Table 1 of the TMS4500A data sheet, the strap selection should be FSO = 0, FS1 = TWST = 1. This will yield
a refresh rate of 66 MHz and each refresh cycle will take 4 clock cycles. Also, the TMS4500A will insert one wait state
on each access cycle. As was mentioned earlier, the external logic will insert two wait states on each access cycle with
the assistance of the RDY signal from the TMS4500A.
2.
Memory Precharge Time (RAS precharge)
a.
Access Cycles
The precharge time on access cycles is given by:
l>
"2c;'
~
tc2
where
...O·
Dl
::l
en
:;....
.
thus
tc2
~p('LS04)
Propagation delay, input to output (MIN, 74LS04 Spec.)
t p ('S74)
Propagation delay, clock to Q output (MIN, 74S74 Spec.)
tRP
(200 + 6 + 4 + 36 - 30 156 ns RAS precharge time .
0
3
...
o·
Dl
•
+ tp('LS04) + t p('S74) + tAEL-REL * - td7 - tACH-REH - tt(REH)
200 ns
40 -
20)ns
Access Grant Cycles
b.
tc2 = tCH-REL * -
:;,
thus
c.
tCH-RRH - tt(REH)
(200 + 63 - 45 - 20) ns
198 ns RAS precharge time.
Refresh Cycles
1 .5[t c 2)
thus
+ tCH-RRL * - td7 - tACH-REH - tt(REH)
[1.5(200) + 54 - 30 - 40 264 ns RAS precharge time.
20) ns
ALE to eLK Relationship
3.
As mentioned previously, a schottky flip-flop and low-power schottky inverter are used to clock ALE so that a minimum
of 10 ns delay is guaranteed from CLK low to ALE low.
•
Multiply the specified maximum value by 0.9.
9-60
4.
5.
Row Address Setup and Hold Times
+ t p ('LS04) + t p('S74) - tc2/4 - td3 - tAVQV1
tAV-AEL
tc2
thus
tAV-AEL
(200 + 6 + 4 - 50 - 15 - 70) ns
75 ns setup time from CS to ALE starting low.
Also,
tsu(AR)
tc2 + t p ('LS04)
tRAV-MAV
thus
tsu(AR)
(200 + 6 + 4 + 36 - 50 - 15 - 70 - 50) ns
61 ns row address setup time for the DRAMs.
+ t p ('S74) + tAEL-REL * - tc2/4 - td3 - tAVQV1 -
Data Valid to Write Enable
Since data is valid before ALE falls, the data setup time is guaranteed.
6.
Read Access Time
Assuming two wait states are generated for each access cycle:
ta(C)
2[t c 2] -
t p ('LS04)t -
t p ('S74)t -
tAEL-CEL -
tt(CEL) -
tsu2
t Maximum values are used for propagation delays t p ('LS04) and t p ('S74) to
satisfy worst-case design requirements.
thus
ta(C)
[2(200) - 15 - 9 - 200 - 20 - 25] ns
131 ns read access time from CAS.
The previous calculations indicate that RAS precharge and read access requirements will constrain memory selection.
TMS4164-25 devices will not be able to meet either the RAS precharge time (tw(RH) = 150 ns) or the read access time
(ta(C) = 165 ns). TMS4164-20 devices cannot meet the read access time (ta(C) = 135 ns); however, TMS4164-15 devices
meet all timing requirements.
Now that the 128K word memory using TMS4164s has been analyzed, a brief description of a 64K word memory using
TMS4416s will be given. The major difference between the two memory configurations lies in the addition of a 7 4LS 155
used as a one-of-four selector (see Figure 6). The R/W line from the TMS99000 is used to select whether the upcoming
access is to be a read or write cycle. MSF selects either the left or right bank of memory while MSE selects either the upper
or lower bank. Thus, only one of the four banks of 16K word memories will be accessed on any given mefTlory cycle. Because
all of the inputs to the 74LS155 are set up before the start of each DRAM access (ALE starting lowl. there are no timing
constraints when using TMS4416-20 or TMS4416-15 devices.
Two memory system configurations have been presented showing how the TMS4500A can be configured to work with
the TMS99000 16-bit microprocessor. A memory mapping scheme has been provided that is flexible enough to work with
many microcomputer applications using the TMS99000 without modification. Although both expandability and modularity
have been considered in this design, other memory mapping schemes and processor speeds are possible .
Mos Memory
Applications Engineering
*
Multiply the specified maximum value by 0.9.
Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Texas Instruments assumes no responsibility for infringement of patents or rights of others based on Texas Instruments applications assistance or product
specifications, since TI does not possess full access to data concerning the use or applications of customer's products. TI also assumes no responsibility
for customer product designs.
9-61
c
o
";:;
CO
...oE
....
.5
en
c
o
";:;
CO
"~
Q.
c.
'C
"2.
c;'
:t tCH-REl *
RAs starting
tRP
204 ns
3.
...
S'
ALE to elK Relationship
Ell
:::I
The ALE low transition must not occur within 10 ns of the TMS4500A ClK low transition. This is guaranteed
by the phase shift between the 8088 and TMS4500A clocks.
....5'o
ALE low to ClK low time is given by:
en
...
3OJ
...
ci'
where
•
:::s
thus
+ tp04 + tp74
tAEl-Cl
2(toSC) - !OlCH - TCHll
tosc
OSC cycle period (8284A Spec.)
tOlCH
'OSC low to ClK high (MAX 8284A Spec.)
tp04
Propagation delay, MSI gate (MIN 74lS04 Spec.)
tp74
Propagation delay, MSI gate (MIN 74S74 Spec.)
tAEl-Cl
[2(66) - 22 - 85
+ 5 + 41 ns
34 ns
4.
Row Address Setup and Hold Time
The setup time to the TMS4500A is given by:
where
9-66
tAV-AEl
TAVAl - tp32
tAV-AEl
Time delay, address, REN1, CS valid to ALE low (MIN
TMS4500A-15 Spec.)
thus,
TAVAl
Address valid t~ ALE low (TClCH - 60, MIN 8088 Spec.)
tp32
Propagation delay, SSI gate, allowing for delay to CS
(MAX 74lS32 Spec.)
tAV-AEl
(118 - 60 - 22)ns
36 ns
The row address setup time to the DRAMs is given by:
tASR
TAVAl - tRAV-MAV + tAEl-REl *
where
tRAV-MAV
Time delay, row address valid to memory address valid (MAX
TMS4500A-15 Spec.)
thus,
tASR
(118 -
60 - 40 + 27) ns
45 ns
5.
Data Valid to Write Enable
All writes to memory are early writes, which allows data to be set up to
CAS instead of W. The 8088 specifies
that the data is valid a minimum of 0 ns to WR low. This gives a data setup time equal to tACL-CEl (50 ns
MIN) for this circuit.
6.
Read Access time from CAS
The required access tittle for both access and access grant memory cycles must be calculated.
The read access time from CAS on normal access cycles is given by:
where
thus
tCAC
2(TClCl) - TClRl - tACl-CEl - tt(CEl) - TDVCl
tCAC
Access time from CAS
TClRl
RD active delay (MAX 8088 Spec.)
tACl-CEl
Time delay, ACX low to CAS starting low (MAX TMS4500A-15
Spec.)
tt(CEl)
CAS fall time (MAX TMS4500A-15 Spec.)
TDVCl
Data valid delay (MIN 8088 Spec.)
tCAC
[2(200) - 165 - 90 - 15 - 30] ns
c
o
"+::
CO
E
...
....o
.5
en
c
o
-.+:;
CO
"~
Q.
100 ns
Co
CK
74LS74
li
OQ1OQ4
RAS
LV
o
~
TMS4416
IG
~
+5V- f--
OQ1OQ4
IIW
)
10-
'\.
~
TMS4416
OTACK
-}
~
f---
AO-A7
RAO-RA7
CA1-CA6
REN1
MAOCS
H
MA7
CAO*
CA7*
CAS f-- ~
TMS4500A
ROY
RAS1
4
~
4 ....
---
OQ1·OQ4
G
'See text.
FIGURE 2A - TMS4500A/MC68000L6 INTERFACE SCHEMATIC (GATED R/Wi
~
~
OQ1OQ4
G
w TMS4416
,
~
OQ1OQ4
IG
IIW
I
I
~
W TMS4416
'\.,
TMS4416
IG
1IW
16"
TMS4416
TMS4416
I
,-
REFRESH
WRITE
_I_
ACCESS GRANT . ,
(READ)
ClK
AlE,ACR
\
/
r
\
UDS,LoS
R/W
RAS
CAS
G
W
/
\
REFREQ
\
RDY
DTACK
\
/
c
0
',tj
/
.....E
CO
\
0
(
C
t/)
C
0
',tj
CO
,~
C.
FIGURE 2B - TIMING DIAGRAM (GATED R/Wi
C.
clock controls the low going edges of ALE and 5TACi< to ensure proper timing for both the TMS4500A
and DRAM. The two flip-flops driving ClK in Figure 4A should be contained within the same package
to minimize the skewing between the two outputs. A 74AS832 is used to derive ALE because of
its necessary speed advantage over a 74S32. If the two flip-flops are not contained in the same package
and a 74AS832 is not used then the MC68000l10 could not meet the RAS precharge and CAS
access times of the TMS4164 or TMS4416. This restriction is not necessary for MC68000L8 operation.
The TMS4500A is strapped for zero wait state operation, with the processor wait state being provided by externally delaying DTACK. If necessary two processor wait states may be inserted by strapping the TMS4500A for 1 wait state operation.
74S74 t
c:
o
0. .
m
E
ClK
J2
..5
As t - - - - t......-t
(/)
r::
o
MC68000l8MC68000l10
A1-A8 t-....;8;,.<-_+-_..:..-.;:..;....:_+-_ _-I
AS-A14
A15
A16
A17
6
0+:i
m
o~
CA1-CA'6
CAO'
CA7'
C.
Co
~
•
RENl
t----t------+--~CS
ROY
'See text.
tOevices are contained in the same package.
,FIGURE 4A - TMS4500A/MC68000L8-MC68000L 10 INTERFACE SCHEMATIC
9-77
r
..
WRITE -------I.~~---REFRESH---.......I.~ACCESS GRANT-..I
I
(READ)
-I
CLK
¢
As
ALE
RAs
CAS
REFREQ
ROY
DTACK
J>
't:S
"5!.
FIGURE 4B - TMS4500A/MC68000L8-MC68000L 10 TIMING DIAGRAM
(:;'
Q)
r+
0'
:::J
The following calculations reflect gated R/W operation.
t/)
5'
1. Refresh time
~
Refresh interval = 1.56 ms
i
TWST
....
r+
= 0,
FS1
=
1, FSO
0'
:::J
2, Memory precharge time
a. Access cycles
tRP = 2(T)
+ to - tClSH - tp832 - tAEH-REH - ttREH + tp74 + tAEl-REl *
Where to = Oelay between ClK and (j>
tp832 = Propagation delay (MAX 74S832 Spec_)
tP74 = Propagation delay (MIN 74S74 Spec.)
to = 1/2(tC)
and
9-78
+
tp04 - ts
tc = 20 MHz clock cycle time
tp04 = Propagation delay (MIN 74S04 Spec.)
ts = Skew between ClK and (j>
thus,
to = [1/2(50)
= 26 ns
tRP = [2(100)
= 162 ns
+ 2 - 1] ns
+ 26 - 50 - 5 - 25 - 15 + 4 + 27] ns
b. Refresh cycles
tRP = 1.5(T) - tCLSH - tp832 - tAEH-REH - ttREH
tRP = [1.5(100) - 50 - 5 - 25 - 15
= 100 ns
+ tCH-RRL *
+ 45] ns
c. Access grant cycles
tRP = T - tCH-RRH - ttREH + tCH-REL *
tRP = (100 - 35 - 15 + 54) ns
= 104 ns
3. ALE to CLK relationship
ALE low is triggered by the rising edge cP after AS goes low, which exceeds the minimum 10 ns
specification.
4. Row address setup and hold time
The row address setup time to the TMS4500A is given by
tAV-AEL = T - tCLAV
where
thus
+ to + tP74 + tpmin832
tCLAV = Clock low to address valid (MAX MC68000L10 Spec.)
tPmin832 = Propagation delay (MIN 74AS832 Spec.)
tAV-AEL = (100 - 55 + 26 + 4 + 1) ns
= 76 ns
c
o
0,t:;
..E
C'CS
o
The row address setup time to the ORAM is given by:
tASR = T - tCLAV
thus
'too
.5
+ to + tp74 + tPmin832 - tRAV-MAV + tAEL-REL *
tASR = (100 - 55
= 63 ns
fI)
C
o
0,t:;
+ 26 + 4 + 1 - 40 + 27) ns
C'CS
og
Q.
c.
5. Oata valid to write enable
The data valid to write enable is dependent upon the tOOSL timing of the MC68000 when CAS.or
W to the ORAMs is controlled as shown in Figure 1A or Figure 1B.
•
tos = tOOSL
thus
+ tp32
-
tos = (20 + 8) ns
= 28 ns
6. Read access time from CAS
The read access time from CAS on normal access cycles for the gated R/W configuration is given by:
tCAC = 3.5 (T) - 1/2(T) - to - tp74 - tp832 - tAEL-CEL - tt(CEL) - tOICL
tCAC = [3.5(100) - 1/2(100) - 26 - 9 - 5 - 150 - 15 - 15] ns
= 80 ns
9-79
"C
'2..
c:r
m
...o·
j
(I)
....5'o
.
3
...
m
o·
::s
9-84
AN INTRODUCTION TO CACHE MEMORY SYSTEMS
AND THE TMS21 50
As the typical operating speeds of processors have increased to provide for the ever increasing need for computing power, the necessity of developing a memory hierarchy (the incorporation of two or more memory
technologies in the same system) has become apparent. One of these memory technologies is selected on the
basis of fast access time (with associated high cost per bit) to allow minimum system cycle time. The other
technologies are chosen with the lowest possible cost per bit relative to speed in order to achieve the maximum
system memory capacity. In a system with a multiple level hierarchy, the speed/cost relationship depends upon
the frequency of access and the total memory requirement at that leveL By proper use of this hierarchy through
coordination of hardware, system software, and in some cases user software, the overall memory system will
reflect the characteristics that approximate the fast access time of the fast memory technology and the low cost
per bit of the low cost memory technology. Large computer systems have made use of this memory optimization
technique to maintain very large data bases and high throughput (see Figure 1). Many smaller processor systems
use this technique to allow mass storage of data, where a tape or disk is the low cost memory and RAM (Random
Access Memory) is the fast memory technology.
c
o
"';::;
CO
E
~
....o
.5
en
Memory hierarchy is now extending to the RAM memory used in microcomputer systems because of the increase in processor speeds. Typically, Dynamic RAM (DRAM) is used as the bulk or main memory and High
Speed Static RAM (HSS) serves as the fast access memory. This HSS RAM is usually 1 K to 8K words deep and
serves as a fast buffer memory between the processor and the main memory. This small, fast buffer memory is
called "cache" memory as it is the storage location for a carefully selected portion of the data from the main
memory. The addresses for that portion of memory currently in the buffer memory is saved in the cache tag RAM
(a small memory that is used to store the addresses of the data that has been mapped to cache) .
C
o
"';::;
CO
"~
Q.
c.
"'C
"E-
n·
...o·
0)
BLOCK SIZE
=
1
::J
en
FIGURE 5 - CACHE MEMORY CONFIGURATION
:;....
.
o
3
0)
...
o·
::J
9-90
MATCH OUTPUT TO
BUFFER ENABLE
A dual cache structure (K = 2) is shown in Figure 6. The 1 megaword main memory is divided into 1024 sets of 256 fourword blocks. In this example, AO and A 1 are used to select which one of the four words within a block are accessed, and
A2 - A 10 select which of the 51 2 block labels are to be compared. Addresses A 1 2 - A 1 9 form the eight-bit label for the
block. Address A 11 is used by the cache control logic in conjunction with the possible processor status lines as chip select
inputs. The match outputs from the two TMS21 50s A 1 and A2 are NANDed to form an active low enable to the cache data
buffers and to serve as request to the control logic. The match outputs from B 1 and B2 also are NANDed to perform a similar
function for cache RAM B. If no match is found in cache RAM A or B, the control logic will initiate an access from main
memory. The purpose of the dual cache architecture is to allow for rapid switching between multiple tasks or programs since
the processor can have access to one cache while the controller moves data between main memory and the other cache. The
dual or mUltiple cache approach also yields more replacement options than the single cache architecture. When an access'
results in a miss in the single cache system, the data in cache is replaced by the current data even though the old data may
still be useful. By using "independent" caches, the control can determine which data is most expendible and replace that
block while the other caches keep their potentially useful data.
Cache memory architecture can enhance the throughput of many micr~processor systems, allowing large, low-cost memory
to perform like high speed RAM. The TMS21 50 reduces the tag memory implementation cost and complexity and provides
label comparison times comparible to the access times of high-speed memories. These additional benefits make highperformance microprocessor designs that can utilize the same techniques of optimizing cost/memory size/throughput that
had previously been found only in larger computer applications.
MOS Memory
Applications Engineering
~
lsI
.r
I
le,
PROCESSOR
00- 01B
CACHE RAM ARRANGED IN
DUAL 4K WORD CACHE
00-016
CACHE RAM B
MAIN
MEMORY
UPTO
1M WORDS
-L..
Er-
00-016
A1-A19
A2-A10
tn
S ±A12-A19
C
9,
o
4
DO
CACHE
CONTROL
LOGIC
~
____________________
~
'';:
07
CO
,~
AO-AS
-: s
________
________
CACHE
TAG
RAMB1
M~
_
MEMORY
CONTROL
JIS
~~-
CACHE TAG
RAMB2
M
M'ATCii1i
00-07
AD-AS
CACHE TAG
S
M
RAM A1
.1 _
1
______-1..
1S
..
E
o
...E
A12-A19
~
o
CO
CACHE RAM A
__
I-
c
'';:
C~~~ ;:G
hh.
~ l-Jl-T
M
MEMORY DIVISION
1024 SETS
256 BLOCKS/SET
4 WORDS/BLOCK
FIGURE 6 - CACHE MEMORY CONFIGURATION: DUAL CACHE (K=2)
9-91
Q.
c,;
<
»
"E..
cr
'C
Q)
r+
0'
:::J
til
:;....
o
...
3
Q)
r+
0'
-
:::J
9-92
HIGH DENSITY ROMS
IN CONSUMER GAME SYSTEMS
This application report will introduce the reader to the options available with the TI high density ROM family. Two
chip select options have been implemented for these devices:
a standard addressing scheme and a bank select option that
divides the device into 8K banks. The bank select versions
will allow the higher density ROMs to work with most of
the game systems now on the market even though the systems
will not directly address 16K of memory.
Most of the game systems on the market use a 74138 oneof-eight decoder to provide the chip select signals. The exceptions to this use a similar method for generating chip
selects and this discussion is applicable to them. Since most
of the systems used for games do their chip select decoding
in 8K byte blocks, the 8K bank select architecture is ideal
for systems that have restricted address space.
The bank select ROM (TMS47128) is put into the system
with the bank select lines connected to the appropriate system
chip select outputs (see Figure 1). These systems will only
have one chip select active at a time. If the bank select inputs of the ROM are programmed active low, the device outputs will be tri-stated unless one of the system chip selects
is active. This allows the chip selects of the ROM to be tied
active and let the bank select inputs control the accessed bank
and output impedence. Most of the memory accesses in a
game system will be to ROM so having the device active
all the time will not significantly increase system current consumption. In fact the system may operate more reliably due
to the lack of current spikes caused by powering the ROM
on and off.
The limiting factor in most game systems on the market
is the lack of ROM address space. By providing a family
of high density ROMs with the bank select feature TI has
given these games extended capabilities and the software offers the opportunity to write more colorful and complicated
programs.
MOS Memory
Applications Engineering
c
o
'';::;
..E
CO
o
+5 V
\f-
.5
AO-A12
(I)
c
o
~--------------~ 581
'';::;
______________~SB2
.~
CO
~
Q.
c.
«
•
Q1-Q8
r---------1
TMS47128
Figure 1. Game SystemlTMS47128 Interface
9-93
•
9-94
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide . .
Glossary /Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic·· RAM Modules . .
EPROM Devices . .
, ROM Devices
Static RAM and Memory Support Devices
Applications ·'nformation . .
Logic Symbols
Mechanical Data
II
LOGIC SYMBOLS
EXPl.ANATION OF NEW LOGIC SYMBOLS
FOR MEMORIES
1.
INTRODUCTION
The International Electrotechnical Commission (lEC) has been developing a very powerful symbolic language that can
show the relationship of each input of a digital logic circuit to each output without showing explicitly the internal
logic. At the heart of the system is dependency notation, which will be partially explained below.
The system was introduced in the USA in a rudimentary form in IEEE/ANSI Standard Y32.14-1973. Lacking at that
time a complete development of dependency notation, it offered little more than a substitution of rectangular shapes
for the familiar distinctive shapes for representing the basic functions of AND, OR, negation, etc. This is no longer
the case.
Internationally, IEC Technical Committee TC-3 has prepared a new document (Publication 617-12) that will consolidate
the original work started in the mid 1960's and published in 1972 (Publication 117-15) and the amendments and supplflments that have followed. Similarly for the USA, IEEE Committee SCC 11.9 has revised the publication IEEE
Std 91/ANSI Y32.14. Texas Instruments participated in the work of both organizations and this 1984 Edition of the
MOS Memory Data Book introduces new logic symbols in anticipation of the new st~ndards. When changes are made as
the standards develop, future editions of this book will take those changes into account.
The following explanation of the new symbolic language is necessarily brief and greatly condensed from what the
standards publiGCItions will finally contain. This is not intended to be sufficient for those people who will be developing
symbols for new devices. It is primarily intended to make possible the understanding of the symbols used in this book.
2.
EXPLANATION OF A TYPICAL SYMBOL FOR A STATIC MEMORY
The TMS 2114 symbol will be explained in detail. This symbol includes almost all the features found in the others.
Section 4, oiagramatic Summary, should be referred to while reading this explanation.
TMS2114
RAM102Ax4
By convention all input lines are located on the left and output lines are
located on the right. When an exception is made, an arrowhead shows reverse
signal flow. The input/output lines (001 through 004) illustrate this.
The polarity indicator ~ indicates that the external low level causes the
internal 1 state (the active state) at an input or that the internal 1 state causes
the exte[nal low level at an output. The effect is similar to specifying positive
logic and using the negation symbol 0 •
The rest of this discussion concerns features inside the symbol outline. The
address inputs are arranged in the order of their assigned binary weights and
the range of the addresses are shown as A where m is the decimal equivalent
of the lowest address and n is the highest. The inputs and outputs affected by
these addresses are designated by the letter A.
r:;
en
'0
.Q
E
en>-
The letter Z followed by a number is used to transfer a signal from one point
(,)
in a symbol to another. Here the signal at output A,Z3 transfers to the 3 at
the left side of the symbol in order to form an inpot/output port. The A
means the output comes from the storage location selected by the address
inputs.
_.
'e»
.9
The 'V symbol designates a three·state Ol,ltput. Three-state outputs will always
be controlled by an EN function. When EN stands at its internal 1 state, the
outputs are enabled. When EN stands at its internal 0 state, the three-state
outputs stand at their high·impedance states.
184
TEXAS INSTRUMENTS
INCORPORATED
POST OFFICE BOX 225012 • OALLAS, TEXAS 75265
10-1
.
LOGIC SYMBOLS
Since the boxes associated with 002, 003, and 004 have no .internal qualifying symbols, it is to be understood that
these boxes are identical to the box associated with 001.
Any 0 input is associated with storage. Whatever internal state is taken on by the 0 input is stored. The letter A (in
A,Z3) indicates that the state of the 0 input will be stored in a cell selected by the A inputs. If the 0 input is disabled,
the storage element retains its content.
Various types of relationships between ports can be indicated by what is called dependency notation. A letter indicating
the type of dependency (e.g., C, G, Z) is placed at the affecting input (or output) and this is followed by a number.
Each affected input (or output) is labeled with that same number. The Z symbol explained above is one form of
dependency notation. Several other types of dependency have been' defined but their use has not been anticipated in
this book.
The numeral 2 at the 0 input indicates that the 0 input is affected by another input, in this case a C input (i.e., 1 C2).
When a C input stands at its internal 1 state, it enables the affected 0 input(s). When the C input stands at its internal
o state, it disables the 0
input(s) so that it (they) can no longer alter the contents of the storage element(s).
The C input is itself affected by another input. The numeral 1 in front of the C shows that a dependency relationship
exists with a G input. The letter G indicates an AND relationship. When a G input stands at its internal 1 state (low in
this case), the affected inputs (EN and C2 here) are enabled. When the G input stands at its internal 0 state, it imposes
the 0 state on the affected inputs.
Pin 10 'has two functions. Its function as a C input has just been explained. Note that for the C input function to stand
at its 1 state, pin 10 must be low and pin 8 must also be low. The other function of pin lOis as an EN input. This
controls the 3·state outputs. This EN input is also affected by the AND relationship with pin 8 so for the EN function
to stand at its internal 1 state (enabling the outputs), pin 10 must be high and pin 8 must be low.
Labels within square brackets are merely supplementary and shOUld be self·explanatory.
3.
CACHE ADDRESS COMPARATOR
The block diagram for the TMS 2150 uses the RAM symbol (explained in Section 2) and also the following:
Buffer without special amplification. If special amplification is included, the
numeral 1 is replaced by t>.
D
.. D
r-
o
CO
C:;"
Even·parity element. The output stands at its l-state if an even number of
inputs stand at their l-states.
(I)
'<
3
C"
o
en
Odd-parity element. The output stands at its l-state if an odd number of inputs stand at their l-states.
NOTE:
TMS 2150 uses one of these to generate even parity by adding the
output as a ninth bit.
184
10-2
TEXAS INSTRUMENTS
INCORPORATED
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
LOGIC SYMBOLS
DIAGRAMATIC SUMMARY
4.
INPUTS
G (AND) DEPENDENCY
Active H (high)
a
G5
Active L (low)
b
5
Active on L-to-H transition
c
5
Active on H-to-L transition
d
5
ab
-
-
ac
ad
C(CONTROL) DEPENDENCY
INPUT/OUTPUT
a
-r--r----r-4-l__
L__
a
--
OUTPUTS
S [Set]
a--fc;--
b---t:D
b - -....-~
ai---z11-
R [Reset]
Z (INTERCONNECTION) DEPENDENCY
Active high
z
Active low*
3-State
a
5
Open-Circuit (L-type)t
Open-Circuit (H-type):f
en
'0
COMMON CONTROL BLOCK
a
a
b
• The active-low indicator may be used in combination with the 3state and open-circuit indicators.
t L-tYpes include N-channel open-drain and P-channel open-source
outputs.
of H-tYpes include P-channel open-drain and N-channel open-source
outputs.
d
E
>
CI)
CJ
'eon
..J
b
c
.c
c
d
84
TEXAS INSTRUMENTS
INCORPORATED
POST OFFICE BOX 225012 • DALLAS. TEXAS 75265
10-3
LOGIC SYMBOLS
5.
EXPLANATION OF A TYPICAL SYMBOL FOR A DYNAMIC MEMORY
5.1
THE TMS 4116 SYMBOL
The TMS 4116 symbol will be explained in detail for each
operating function. The assumption is made that Sections
2 and 4 have been read and understood. While this symbol
is complex, so is the device it represents and the symbol
shows how the part will perform depending on the sequence in which signals are applied.
TMS 4116
RAM 16K X 1
....;(5"";)_ _-1 20D7/2100
AO (7)
~!
(6)
o
A3 (12)
A16383
A4 (11)
A5 (10)
A6 (13)
RAS _(....;4)....--1
CAS_(1_5~)~~------~
23C22
5.2
TN
(3)
D
(2)
A,22D
(14) Q
A\l
ADDRESSING
The symbol above makes use of an abbreviated form to show the multiplexed, latched addresses. The blocks represent·
ing the address latches are implied but not shown.
.....
CAS
0
CCI
c:;'
til
'<
A1
A4
A5
O
A6
C-
en
--
0
A16383
A3
3
3
4
A4
A2
-
0
2
A2
A3
AO
r-
C21
21D
AO
A1
A5
5
A6
6
r....
RAS
\
C20
' - - 20D
L.---
I---
C20
0
A 16383
7
8
9
10
11
C21
12
13
184
TEXAS INSTRUMENTS
INCORPORATED
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
lOGIC SYMBOLS
I>
When RAS goes low, it momentarily enables (through C20,
indicates a dynamic input) the D inputs of the seven
address registers 7 through 13. When CAS goes low, it momentarily enables (through C21) the D inputs of the seven
address registers 0 through 6. The outputs of the address registers are the 14 internal address lines that select 1 of
16,384 cells.
5.3
REFRESH
When RAs goes low,row refresh starts. It ends when RAS goes high. The
other input signals required to carry out refreshing are not indicated by
the symbol.
RAS4lREFRESH Rowl
5.4
POWER DOWN
RAS
CAS
5.5
CAS is
AND'ed with RAs (through G24) so when RAS and CAS are both
high, the device is powered down.
~ 24 [PWR DWNl
----1
G24
.
WRITE
By virtue of the AND relationship between CAS and iN (explicitly shown),
when either one of these inputs goes low with the other one and RAs already low (RAS is AND'ed by G23), the D input is momentarily enabled
(through C22). In an "early-write" cycle it is W that goes low first; this
causes the output to remain off as explained below.
RAS
CAS
23C22
iN
D
5.6
READ
CAS
--e.......,&.;~C21
G24
RAS - -.......~ G23
iN - - - - I
1----.....
23,21 D
'24EN
A\l
Q
The AND'ed result of RAS and iN (produced by G23) is
clocked into a latch (through C21) at the instant CAS goes
low. This result will be a "1" if RAS is low and iN is high.
The complement of CAS is shown to be AND'ed with the
output of the latch (by G24 and 24). Therefore, as long as
CAS stays low, the output is enabled. In the "early-write"
cycle referred to above, a "0" was stored in the latch by W
being low when CAS went low, so the output remained
disabled.
tn
'0
.c
If you have questions on this Explanation
of New Logic Symbols, please contact:
F.A. Mann MS 49
Texas Instruments Incorporated
P.O. Box 225012
Dallas, Texas 75265
Telephone (214) 995-2867
IEEE Standards may be purchased from:
Institute of Electrical and Electronics Engineers, Inc.
345 East 47th Street
New York, N.Y. 10017
International Electrotechnical Commission (lEC)
publications may be purchased from:
American National Standards Institute,lnc.
1430 Broadway
New York, N.Y. 10018
E
en>
(.)
..
'0,
o
...I
184
TEXAS INSTRUMENTS
INCORPORATED
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
10-5
r-
o
CQ
(;'
rn
-<
3
0"
o
•
Cii"
. 10-6
184
Alphanumeric Index, Table of Contents, Selection Guide
Interchangeability Guide
Glossary/Timing Conventions/Data Sheet Structure
Dynamic RAM and Memory Support Devices
Dynamic RAM Modules
EPROM Devices
ROM Devices . .
Static RAM and Memory Support Devices
Applications Information . .
Logic· Symbols
Mechanical Data
•
MECHANICAL DATA
general
Electrical characteristics presented in this catalog, unless otherwise noted, apply to device type(s) listed in the page
heading, regardless of package. Factory orders for devices described should include the complete part-type numbers
listed on each page.
MOS NUMBERING SYSTEM
EXAMPLE:
TMS
-45
2114L
L
N
(J.g. )
Max Access
4
45 ns - 20 200 ns
FP Plastic Chip Carrier
-
5
55 ns - 25 250 ns
J
-
7
70 ns - 30 300 ns
TMS Commercial MOS
SMJ Military MOS
Cerpak/Cerdip
-40°C to BO°C
L OOC to 70°C
JD Side Braze
M -55°C to 125°C
-10100 ns -35350 ns
MC Chip-on-Board
S
-12 120 ns -45 450 ns
N Plastic DIP
-55°Cto 100°C
-15 150 ns
t Inclusion of an "L" in the product identification indicates the device operates at low power.
manufacturing information
Die-attach is by standard gold silicon eutectic or by conductive polymer.
Thermal compression gold wire bonding is used on plastic packaged circuits. Typical bond strength is 5 grams. Bond
strength is monitored on a lot-to-Iot basis. Any pre seal bond strength of less than 2 grams causes rejection of the
entire lot of devices. On hermetic devices either thermal compression or ultrasonic wire bonding is used. All hermetic
MaS LSI devices produced by TI are capable of withstanding 5 X 10 - 7 atm cc/sec inspection any may be screened
to 5 X 10 - B atm cc/sec fine leak, if desired by the customer, for special applications.
All packages are capable of withstanding a shock of 3000 g. All packages are capable of passing a 20,000 g acceleration (centrifuge) test in the V-axis. Pin strength is measured by a pin-shearing test. All pins are able to withstand the
application of a force of 6 pounds at 45 0 in the peel-off direction.
dual-in-line packages
A pin-to-pin spacing of 2.54 mm (100 mils) has been selected for standard dual-in-line packages (both plastic and
ceramic).
TI uses three types of hermetically sealed ceramic dual-in-line packages: cerdip-, cerpak, and sidebrazed. The cerdip
and cerpak packages have tin-plated leads. The sidebraze package has gold-plated leads. The plastic package may
have tin-plated leads, 60/40 solder-plated leads, or 60/40 hot-solder-dipped-finished-Ieads.
chip-on-board
TI will bond some MaS memory circuits (particularly ROMs) directly to a printed circuit board specified by the customer.
This custom packaging technique for consumer applications utilizes a plastic sealant molded over the silicon directly
mounted and ultrasonic wire bonded to a printed circuit board. Board material as well as dimensions are specified
......b.y. th.e
. . .c.u.st.o.m
..
e.r..............................................................................
~
34
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
11-1
MECHANICAL DATA
All measurements are given using both metric and English systems. Under the metric system, the measurements are
given in millimeters; under the English system, the measurements are given in inches. The English system measurements
are indicated in parentheses next to the metric.
ceramic packages - side braze (JD suffix)
~ A±0.025_~
r-
0,508
(OM~~OI~
(±0.010)
SEATING
- PLANE
~~0
5,08 (0.200) MAX
3,175 (0.125) MIN
105
0,279 ± 0,076 ...I~
(0.011 ± 0.003)
m
L
T
~
PIN SPACINGJ
2,54 (0.100) NOM
~~
L
0,457 ± 0,076
(0.018 ± 0.003)
~
16
18
20
22
24
24
28
40
A ± 0,025
(±0.010)
7,62
(0.300)
7,62
(0.300)
7,62
(0.300)
10,16
(0.400)
7,62
(0.300)
15,24
(0.600)
15,24
(0.600)
15,24
(0.600)
B(MAX)
20,57
(0.810)
23,11
(0.910)
25,65
(1.010)
27,94
(1.100)
30,86
(1.215)
32,77
(1.290)
35,94
(1.415)
51,31
(2.020)
C(NOM)
7,493
(0.295)
7,493
(0.295)
7,493
(0.295)
10,03
(0.395)
7,493
(0.295)
15,11
(0.595)
15,11
(0.595)
15,11
(0.595)
DIM.
.. -----------------11-2
TEXAS
INSTRUMENTS
POST OFFICE BOX 225012 • DALLAS, TEXAS 75265
184
MECHANICAL DATA
ceramic packages - cerdip/300 mil cerpak (J suffix)
It.
: Aurora (303) 695·2800
CONNECTICUT: Wallingford (203) 269·0074
FLORIDA: Ft. Lauderdale (305) 973·8502.
Maitland (305) 660·4600; Tampa (813) 870·6420
GEORGIA: Atlanta (404) 452·4600
ILLINOIS: Arlington Heights (312) 640·2925
INDIANA: Ft. Wayne (219) 424·5174;
Indianapolis (317) 248·8555
IOWA: Cedar Rapids (319) 395·9550.
MARYLAND: Baltimore (301) 944·8600
MASSACHUSETTS: Waltham (617) 895·9100
MICHIGAN: Farmington Hills (313) 553·1500.
TI AUTHORIZED DISTRIBUTORS IN
USA
Arrow Electronics
Diplomat Electronics
ESCO Electronics
General Radio Supply Company
Graham Electronics
Harrison Equipment Co.
International Electronics
JACO Electronics
Kierulff Electronics
LCOMP, Incorporated
Marshall Industries
Milgray Electronics
Newark Electronics
Rochester Radio Supply
Time Electronics
R.V. Weatherford Co.
Wyle Laboratories
MINNESOTA: Eden Prairie (612) 828·9300.
MISSOURI: Kansas City (816) 523·2500;
St. Louis (314) 569·7600
NEW JERSEY: Iselin (201) 750·1050.
NEW MEXICO: Albuquerque (505) 345·2555.
NEW YORK: East Syracuse (315) 463·9291;
Endicott (607) 754·3900; Melville (516) 454·6600;
Pittsford (716) 385·6770;
Poughkeepsie (914) 473·2900.
NORTH CAROLINA: Charlotte (704) 527·0930;
Raleigh (919) 876·2725.
OHIO: Beachwood (216) 464·6100;
Dayton (513) 258·3877.
OKLAHOMA: Tulsa (918) 250·0633.
OREGON: Beaverton (503) 643·6758
PENNSYLVANIA: Ft. Washington (215) 643·6450;
Coraopolis (412) 771·8550.
PUERTO RICO: Hayo Rey (809) 753·8700
TEXAS: Austin (512) 250·7655;
Houston (713) 778·6592; Richardson (214) 680·5082;
San Antonio (512) 496·1779
UTAH: Murray (801) 266·8972.
VIRGINIA: Fairfax (703) 849·1400.
WASHINGTON: Redmond (206) 881·3080.
WISCONSIN: Brookfield (414) 785·7140
CANADA: Nepean, Ontario (613) 726·1970;
Richmond Hill, Ontario (416) 884·9181;
St. Laurent, Ouebec (514) 334·3635.
TI AUTHORIZED DISTRIBUTORS IN
CANADA
CESCO Electronics, Inc.
Future Electronics
ITT Components
L.A. Varah, Ltd.
ALABAMA: Arrow (205) 882·2730;
Kierulff (205) 883·6070; Marshall (205) 881·9235.
ARIZONA: Arrow (602) 968·4800;
Kierulff (602) 243·4101; Marshall (602) 968·6181;
Wyle (602) 249·2232.
CALIFORNIA: Los Angeles/Orange County:
Arrow (213) 701-7500, (714) 838·5422;
Kierulff (213) 725·0325, (714) 731·5711;
Marshall (213) 999·5001, (818) 442·7204,
(714) 660·0951; R.v. Weatherford (714) 634·9600,
(213) 849·3451, (714) 623·1261; Wyle (213) 322·8100,
(714) 863·9953; Sacramento: Arrow (916) 925·7456;
Wyle (916) 638·5282; San Diego:
Arrow (619) 565·4800; Kierulff (619) 278·2112;
Marshall (619) 578·9600; Wyle (619) 565·9171;
San FranCisco Bay Area: Arrow (408) 745·6600;
(415) 487·4600; Kierulff (408) 971·2600;
Marshall (408) 732·1100; Wyle (408) 727·2500;
Santa Barbara: R.V. Weatherford (805) 965·8551.
COLORADO: Arrow (303) 696·1111;
Kierulff (303) 790·4444; Wyle (303) 457·9953
CONNECTICUT: Arrow (203) 265·7741;
Diplomat (203) 797·9674; Kierulff (203) 265·1115;
Marshall (203) 265·3822; Milgray (203) 795·0714.
TI Regional
FLORIDA: Ft. Lauderdale: Arrow (305) 776·7790;
Diplomat (305) 974·8700; Kierulff (305) 486·4004;
Orlando: Arrow (305) 725·1480;
Milgray (305) 647·5747; Tampa:
Diplomat (813) 443·4514; Kierulff (813) 576·1966.
Technology Centers
GEORGIA: Arrow (404) 449·8252;
Kierulff (404) 447·5252; Marshall (404) 923·5750.
MARYLAND: Arrow (301) 247·5200;
Diplomat (301) 995·1226; Kierulff (301) 636·5800;
Milgray (301) 793·3993
MASSACHUSETTS: Arrow (617) 933·8t30;
Diplomat (617) 935·6611; Kierulff (617) 667·8331;
Marshall (617) 272-8200; Time (617) 935·8080.
MICHIGAN: Detroit: Arrow (313) 971·8220;
Marshall (313) 525·5850; Newark (313) 967·0600;
Grand Rapids: Arrow (616) 243·0912.
MINNESOTA: Arrow (612) 830·1800;
Kierulff (612) 941·7500; Marshall (612) 559·2211.
M ISSOU RI: Kansas City: lCOM P (816) 221·2400;
SI. Louis: Arrow (314) 567·6888;
Kierulff (314) 739·0855.
NEW HAMPSHIRE: Arrow (603) 668·6968.
NEW JERSEY: Arrow (201) 575·5300. (609) 596·8000;
Diplomat (201) 785·1830;
General Radio (609) 964·8560; Kierulff (201) 575·6750;
(609) 235·1444; Marshall (201) 882·0320,
(609) 234·9100, (609) 235-1444; Milgray (609) 983·5010.
NEW MEXICO: Arrow (505) 243·4566;
International Electronics (505) 345·8t27.
NEW YORK: Long Island: Arrow (516) 231·1000;
Diplomat (516) 454·6400; JACO (516) 273·5500;
Marshall (516) 273·2424; Milgray (516) 420·9800;
Rochester: Arrow (716) 275·0300;
Marshall (716) 235·7620;
Rochester Radio Supply (716) 454·7800; Syracuse:
Arrow (315) 652·1000; Diplomat (315) 652·5000;
Marshall (607) 754·1570.
NORTH CAROLINA: Arrow (919) 876·3132,
(919) 725·8711; Kierulff (919) 872·8410.
OHIO: Cincinnati: Graham (513) 772·1661;
Cleveland: Arrow (216) 248·3990;
Kierulff (216) 587·6558; Marshall (216) 248·1788
Columbus: Graham (614) 895·1590;
Dayton: Arrow (513) 435·5563;
ESCO (513) 226·1133; Kierulff (513) 439·0045;
Marshall (513) 236·8088.
OKLAHOMA: Arrow (918) 665·7700;
Kierulff (918) 252·7537.
OREGON: Arrow (503) 684·7690;
Wyle (503) 640·6000.
PENNSYLVANIA: Arrow (412) 856·7000,
(215) 928·1800; General Radio (215) 922·7037.
TEXAS: Austin: Arrow (512) 835·4180;
Kierulff (512) 835·2090; Marshall (512) 458·5654;
Wyle (512) 834·9957; Dallas: Arrow (214) 386·7500;
International Electronics (214) 233·9323;
Kierulff (214) 343·2400; Marshall (214) 233-5200;
Wyle (214) 235·9953;
EI Paso: International Electronics (915) 598·3406;
Houston: Arrow (713) 530·4700;
Marshall (713) 789-6600;
Harrison Equipment (713) 879·2600; .
Kierulff (713) 530·7030.
UTAH: Diplomat (801) 486·4134;
Kierulff (801) 973-6913; Wyle (801) 974·9953
VIRGINIA: Arrow (804) 282·0413.
WASHINGTON: Arrow (206) 643·4800;
Kierulff (206) 575·4420; Wyle (206) 453·8300.
CALIFORNIA: Irvine (714) 660·8140,
Hotline: (714) 660·8164; Santa Clara (408) 748·2220,
Hotline: (408) 980·0305.
WISCONSIN: Arrow (414) 764·6600;
Kierulff (414) 784·8160.
GEORGIA: Atlanta (404) 452·4682,
Hotline: (404) 452·4686
~~il~n~I:~~~~:i~~~06"o~8eights (312) 640·2909,
MASSACHUSETTS: Waltham (617) 890·6671.
Hotline: (617) 890·4271
TEXAS: Richardson (214) 680·5066,
Hotline: (214) 680·5096
IOWA: Arrow (319) 395·7230.
KANSAS: Kansas City: Marshall (913) 492·3121;
Wichita: LCOMP (316) 265·9507.
TEXAS
INSTRUMENTS
Creating useful products
and services for you.
CANADA: Calgary: Future (403) 259·6408; Varah
(403) 230·1235; Edmonton: Future (403) 486·0974;
Hamilton: Varah (416) 561·9311; Montreal:
CESCO (514) 735·5511; Future (514) 694·7710;
ITT Components (514) 735·1177; Oltawa:
CESCO (613) 226·6903; Future (613) 820·8313; ITT
Components (613) 226·7406; Varah (613) 726·8884;
Ouebec City: CESCO (418) 687·423t; Toronto:
CESCO (4t6) 661·0220; Future (4t6) 663·5563;
ITT Components (4t6) 630·7971; Vancouver:
Future (604) 438·5545; Varah (604) 873·3211;
ITT Components (604) 270·7805; Winnipeg:
Varah (204) 633·6190; Edmonton:
81
Future (403) 486·0974.
TI Worldwide
Sales Offices
~~~~~m:: r~3~~~~(~~~ ~~~75fo.ive, Suite 514,
~~~~~~~;~~~~~I'I~~~~I(~~~)n64~~4~~;W York Dr.,
Coraopolis: 420 Rouser Rd., 3 Airport Office Park,
Coraopolis, PA 15106, (412) 771·8550.
PUERTO RICO: Heto Rey: Mercantil Plaza Bldg.,
Suite 505, Hato Rey, PR 00919, (809) 753·6700.
TEXAS: Austin: 12501 Research Blvd.,
P.O. Box 2909, Austin, TX 78723, (512) 250·7655;
Richardson: 1001 E. Campbell Rd.,
Richardson, TX 75080,
~Jli~ 62BJl7~a;~s~g~~~~n~ngg, ~m)h7;ilt9~y·,
ARIZONA: Photnl.: 8102 N. 23rd Ave., Suite B,
Phoenix, AZ 85021, (602) 995·1007.
CALIFORNIA: Imn.: 17891 Cartwright Rd., Irvine,
CA 92714, (714) 660·1200; Sacramento: 1900 Point
West Way, Suite 171, Sacramento, CA 95815,
~~i~~ 9l~'~~~' b~:g"o~be.l~2~~~~ ~~) 2~~~~~e.,
~~3J:, ~!~8i: i:~~Vo~~~~e~r;9~~5t~a~fl~~nCtr.,
Bldg. A, Suite 1, Torrance, CA 90502, (213) 217·7010;
Woodland Hills: 21220 Erwin St., Woodland Hills,
CA 91367, (213) 704·7759.
COLORADO: Aurora: 1400 S. Potomac Ave.,
Suite 101, Aurora, CO 80012, (303) 695·2800.
San Anlonlo: 1000 Central Parkway South,
San AntoniO, TX 78232, (512) 496·1779.
UTAH: Murray: 5201 South Green SE, Suite 200,
Murray, UT 84107, (801) 266·8972.
VIRGINIA: Falrt..: 3001 Prosperity, Fairfax; VA
22031, (703) 849·1400.
WASHINGTON: Redmond: 2723 152nd Ave .. N.E.
Bldg. 6, Redmond, WA 98052, (206) 881·3080.
~~~~~~~I~;!~~~~I,eWi ~~OO~: ~~~)~8~.~~:O.
CANADA: Nepean: 301 Moodie Drive, Mallorn
Center, NeGran, Ontario, Canada, K2HIlC4,
CONNEC'tICUT: Wallingford: 9 Barnes Industrial
:;r'OO~~2,~~~~i~J~~~~lal Park, Wallingford,
FLORIDA: Ft. L8Uderdale: 2765 N.W. 62nd St.,
Ft. Lauderdale, FL 33309, (305) 973·8502; Mallllnd:
2601 Maitland Center Parkway, Maitland, FL 32751,
. WI~3~~~~"J H8i ~!~'~~~~~~~:i;,aga~~~~e 51. E.,
b416) 884·9181; St. Laurent: Ville St. Laurenl Quebec,
c~6nOaJ~a~~S~~t\~,~ir:i4~3,;"urent, Quebec,
~~~~ ~~~~~~::.mFtI~Jg, ~i~ee;~2~lvd.,
GEORGIA: Allintl: 3300 Northeast Expy., Building 9,
Atlanta, GA 30341, (404) 452-4600.
~~it~9~~~: ~!?~t':.~LH=~:(gn ~0~4~~quln,
INDIANA: FI. WI!.nl: 2020 Inwood Dr., Ft. Wayne,
L~n~~r1~: ~JI~~ j.:5d,71~dli~~~~I~:,III'N ~~~~,~.
(317) 248·8555.
IOWA: Cedar Rlplds: 373 Collins Rd. NE, Suite 200,
Cedar Rapids, IA 52402, (319) 395·9550.
MARYLAND: Baltimore: I Rutherford PI.,
7133 Rutherford Rd., Baltimore, MD 21207
(301) 944·8600.
. '
MASSACHUSETTS: Waltham: 504 Totten Pond Rd.,
Waltham, MA 02154, (617) 895-9100.
~~~~~~~:~ ~~I~IMlt:80~~I,li~lf)7~l3~sJJ. Mile
Rd.,
MINNESOTA: Eden Prairie: 11000 W. 78th St.,
Eden Prairie, MN 55344 (612) 828·9300.
MISSOURI: Kan... City: 8080 Ward Pkwy., Kansas
City, MO 64114, (616) 523·2500; 51. Louis:
11861 Westline Industrial Drive, 51. Louis,
MO 63141, (314) 569-7600.
NEW JERSEY: Iselin: 485E U.S. Route I South,
Iselin, NJ 08830 (201) 750-1050
NEW MEXICO: Albuquerque: 2620·0 Broadbent Pkwy
NE, Albuquerque, NM 87107, (505) 345·2555.
NEW YORK: East Syracuse: 6365 Old Collamer Dr.,
East Syracuse, NY 13057, (315) 463·9291; Endicott:
112 Nanticoke Ave., P.O. Box 618, Endicott,
NY 13760, (807) 754·3900; Melville: 1 Huntington
~~a~f~~ti51'6)1~1~80tp?ri:'~~~~' ~~~~~~'St.,
Pittsford, NY 14534, (716) 385-6770; Poughkeepsie:
r9e,s4)S~~~~~: I'oughkeepsie, NY 12601,
NORTH CAROLINA: Chartotte: 8 Woodlawn Green,
Woodlawn Rd., Charlotte, NC 28210, (704) 52H)930;
~em~g,~~iR~;~72d5~ Blvd., Suite 100, Raleigh,
OHIO: Beachwood: 23408 Commerce Park Rd.,
Beachwood, OH 44122, (216) 464-6100; Dayton:
~r~S4~~.~~~~:' 4124 Linden Ave., Dayton, OH 45432,
OKLAHOMA: Tulsa: 7615 East 63rd Place,
3 Memorial Place, Tulsa, OK 74133, (918) 250·0633.
OREGON: Beaverton: 6700 SW 105th St., Suite 110,
Beaverton, OR 97005, (503) 643-6756.
ARGENTINA: Texas Instruments Argentina
S.A.I.C.F.: Esmeralda 130, 15th Floor, 1035 Buenos
Aires, Argentina, 1 + 394·2963.
AUSTRALIA II NEW ZEALAND): Texas Inslruments
Australia Ltd.: 6·10 Talavera Rd., North Ryde
b~~nU~'~~2; ~~htPI:~~~~'lSt~tk~:~a2~6;d,
Melbourne, Victoria, Australia 3004, 03 + 267·4677;
6~':~Mt2~RhWay, Elitabeth, South Australia 5112,
AUSTRIA: Texas Instruments Ges.m.b.H.:
~2~~~~i:ilo~be B/16, A·2345 BrunnlGebitge,
~;~;~~M~e~~;:,s ~~~~~,:;:~:s,~~R~:IS~U~ ~~~~e,
1130 Brussels, Belgium, 021720.80.00.
BRAZIL: Texas Instruments Electronicos do Brasil
Ltda.: Rua Paes.Leme, 524·7 Andar Pinhelros, 05424
Sao Paulo, arazil, 0615-6166.
DENMARK: Texas Instruments AlS, Mairelundvej
46E, DK·2730 Herlev, Denmark, 2 • 91 74 00.
FINLAND: Texas Instruments Finland OY:
6~8:1.~,u33skatu 1900051 I Helsinki 51, Finland, (90)
GERMANY (Fed. Republic of Germany): Texas
Instruments DeutSChland GmbH: Haggertystrasse 1,
~:~~:~~~'~:rl~n' ;5~ogjoK+u:2:~~e5~~~~agen
431Klbbelstrasse, .19, 0..,300 Essen, 0201·24250;
Frankfurter Allee 6-8, 0-6236 Eschborm "
06198+43074; Hamburgerstrasse II, 0·2000
Hamburg 76,040+220·1154, Klrchhorsterstrasse 2,
0-3000 Hannover 51, 0511 +648021; Arabeilistrasse
21,0·8000 Munich 81, 089+911006; Maybachstrabe
11, 0·7302 Ostfildern 2·Nellngen, 0711 + 547001;
~~~\~~~~~3'J'9, ~~~t7:s'~~u,r3. ~5~~ K~~ie~~';
0261 + 35044.
HONG KONG 1+ PEOPLES REPUBLIC OF CHINA):
Texas Instruments Asia Ltd., 8th Floor, World
Shipping Ctr., Harbour City, 7 Canton Rd., Kowloon,
Hong Kong, 3 + 722·1223.
IRELAND: Texas Instruments (Ireland) limited:
gfe8'rJW', ~d., Stillorgan, County Dublin, Eire,
ITALY: Texas Instruments Semlconduttorl Italla Spa:
Vlale Delle Sclenze, 1,02015 Clttaducale (R1etl),
Italy, 0746 694.1; Via Salarla KM 24 (Palazzo Cosma),
Monterotondo Scalo (Rome), Italy, 6 + 9003241; Viale
g~r~t3~5~~'~~o~~9Jvg~~~,n~8~0,nti~ t~;II~g~ltaIY,
gJl m~~~: Via J. Baroul 6, 45100 Bologna, Italy,
JAPAN: Texas Instruments Asia Ltd.: 4F Aoyama
Fuji Bldg., 6·12, Kita Aoyama 3·Chome, Mlnato·ku,
Tokyo, Japan 107,03-498·2111; Osaka BranCh, SF,
Nissho Iwal Bldg., 30 Imabashl 3· Chome,
Hlgashl·ku, Osaka, Japan 541, 06·204·1881; Nagoya
Branch, 7F Daln; Toyota West Bldg., 10·27, Melekl
4·Chome, Nakamura·ku Nagoya, Japan
450, 052·583·8691.
KOREA: Texas Instruments Supply Co.: 3rd Floor,
~~g'S~0~\?~o~~~~a:4~f~80~angnam.ku,
MEXICO: Texas Instruments de Mexico S-A.:
Poniente 116, No. 489, Colonia Vallejo, Mexico, D.F.
02300, 567·9200.
MIDDLE EAST: Texas Inslruments: No. 13, 1st Floor
Mannal Bldg., Diplomatic Area, Manama, P.O. Box
26335, Bahrain, Arabian Gulf,973 + 274681.
NETHERLANDS: Texas Instruments Holland B.V.,
P.O. Box 12995, (Bullewljk) 1100 CB Amsterdam,
Zuld·Oost, Holland 20 + 560291 1.
~~~~:1~i,e~~~d~~I~Uo~~~~ (~)of5t6~!S: PB106,
PHILIPPINES: Texas Instruments Asia Ltd.: 14th
Floor, Ba· Lepanl0 Bldg., 8747 Paseo de Roxas,
Makati, Metro Manila, Philippines, 2+8188987.
PORTUGAL: Texas Instruments EQulpamento
5\~1~~~~5b (~~~?:15aL~~ia~~~7~nf;ar~~~~~~~al,
2·948·1003.
~r~~J~~inr:r:i~8~~flc~el~~.tfll~~gu~I:;,ue
SINGAPORE 1+ INDIA, INDONESIA, MALAYSIA,
THAILAND): Texas Instruments Asia Ltd.: 12 Lorong
Bakar Batu, Unil 01-02, Kolam Ayer Industrial Estate,
Republic of Singapore, 747·2255.
(7) 833-04·40; Sirasbourg Sales Office, Le Sebastopol
3, Quai Kleber, 67055 Strasbourg Cedex,
SWEDEN: Texas Instruments lillernatlonal Trade
FRANCE: Texas Instruments France: Headquarters
and Prod. Plant, BP OS, 06270 Villeneuve·Loubet,
~~t~~~r'~~;~~~~i~~~sl;>~6~:sk~~~~9~1c~~~'IIY,
~~6/~2~:~~S~(~~e;i.~U~; ~~~I~~s':u~:I~a~W~~e,
k~ l~r\poo~ro:;e,~~f)~I~"d8!I ~~g~~~s~~red~~I:;m:r~::
~~ll~7~~~~iS-146 Rue Paradis, 13006 Marseille,
SPAIN: Texas Instruments Espana, S-A.: CIJose
Lazaro Galdiano No.6, Madrid 16, 11458.14.56.
~~;g~~~\~~ ~~:J~~~f~~~e2jS~~
39103, 10054
SWITZERLAND: Texas Instruments, Inc., Reidstrasse
6, CH·8953 Dietikon (Zuerich) Switzerland,
1-7402220.
tAIWAN: Texas Instruments SUPPI~ Co.: Room 903,
~
TEXAS
INSTRUMENTS
Creating useful products
and services for you
¥~Tw~~~ ~~~bl~dOf7~~~~~o~i~n~21?~2,:aiPel,
UNITED KINGDOM: Texas Instruments Limiled:
Manton Lane, Bedford, MK41 7PA, England, 0234
67466; 51. James House, Wellington Road North,
Stockport, SK4 2RT, England, 61 +442·7162.
BI
•
TEXAS
Printed in U.S.A.
INSTRUMENTS
SMYDOO2
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